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Sample records for electrically active defects

  1. Electrically active sodium-related defect centres in silicon

    DEFF Research Database (Denmark)

    Dahl, Espen; Madsbøll, J.; Søiland, A.-K.

    2013-01-01

    Electrically active defect centres related to sodium in silicon have been examined with deep level transient spectroscopy, and their recombination potential analysed with the microwave photoconductive decay technique. In order to investigate the entire silicon band gap for defect centres, both p-...

  2. Electrically active defects in solar grade multicrystalline silicon

    DEFF Research Database (Denmark)

    Dahl, Espen

    2013-01-01

    Shortage in high purity silicon feedstock, as a result of the formidable increased demand for solar cell devices during the last two decades, can be mitigated by the introduction of cheaper feedstock of solar grade (So-G) quality. Silicon produced through the metallurgical process route has shown...... the potential to be such a feedstock. However, this feedstock has only few years of active commercial history and the detailed understanding of the nature of structural defects in this material still has fundamental shortcomings. In this thesis the electrical activity of structural defects, commonly associated...

  3. Inspecting the microstructure of electrically active defects at the Ge/GeOx interface

    Science.gov (United States)

    Fanciulli, Marco; Baldovino, Silvia; Molle, Alessandro

    2012-02-01

    High mobility substrates are important key elements in the development of advanced devices targeting a vast range of functionalities. Among them, Ge showed promising properties promoting it as valid candidate to replace Si in CMOS technology. However, the electrical quality of the Ge/oxide interface is still a problematic issue, in particular for the observed inversion of the n-type Ge surface, attributed to the presence of dangling bonds inducing a severe band bending [1]. In this scenario, the identification of electrically active defects present at the Ge/oxide interface and the capability to passivate or anneal them becomes a mandatory issue aiming at an electrically optimized interface. We report on the application of highly sensitive electrically detected magnetic resonance (EDMR) techniques in the investigation of defects at the interface between Ge and GeO2 (or GeOx), including Ge dangling bonds and defects in the oxide [2]. In particular we will investigate how different surface orientations, e.g. the (001) against the (111) Ge surface, impacts the microstructure of the interface defects. [1] P. Tsipas and A. Dimoulas, Appl. Phys. Lett. 94, 012114 (2009) [2] S. Baldovino, A. Molle, and M. Fanciulli, Appl. Phys. Lett. 96, 222110 (2010)

  4. Use of the piezoelectric film for the determination of cracks and defects - the passive and active electric potential CT method

    International Nuclear Information System (INIS)

    Kubo, S; Sakagami, T; Suzuki, T; Maeda, T; Nakatani, K

    2008-01-01

    The passive and active electric potential CT method was proposed by using piezoelectric film for identification of cracks and defects. This method is based on the principle of mutual conversion between mechanical strains and electric potential of piezoelectric material. A smart-layer was constructed using the piezoelectric film, and attached on a structure with a defect. When the structure was subjected to a mechanical load, the electric potential distribution appeared passively on the piezoelectric film due to the direct piezoelectric effect. The defect can be identified from the distribution with the help of inverse analysis. It was found that the crack could be identified reasonably, although the defect depth was not well estimated for the defects located far from the layer. When the electric signal was input to the smart-layer, acoustic wave was actively emitted from the layer due to the inverse piezoelectric effect, and a reflected wave was received on the layer. It was found that the depth of the defect could be estimated well. The simultaneous use of the passive method and the active method is promising for the identification of the defect.

  5. Electrically active point defects in Mg implanted n-type GaN grown by metal-organic chemical vapor deposition

    Science.gov (United States)

    Alfieri, G.; Sundaramoorthy, V. K.; Micheletto, R.

    2018-05-01

    Magnesium (Mg) is the p-type doping of choice for GaN, and selective area doping by ion implantation is a routine technique employed during device processing. While electrically active defects have been thoroughly studied in as-grown GaN, not much is known about defects generated by ion implantation. This is especially true for the case of Mg. In this study, we carried out an electrical characterization investigation of point defects generated by Mg implantation in GaN. We have found at least nine electrically active levels in the 0.2-1.2 eV energy range, below the conduction band. The isochronal annealing behavior of these levels showed that most of them are thermally stable up to 1000 °C. The nature of the detected defects is then discussed in the light of the results found in the literature.

  6. Characterization of electrically-active defects in ultraviolet light-emitting diodes with laser-based failure analysis techniques

    International Nuclear Information System (INIS)

    Miller, Mary A.; Tangyunyong, Paiboon; Cole, Edward I.

    2016-01-01

    Laser-based failure analysis techniques demonstrate the ability to quickly and non-intrusively screen deep ultraviolet light-emitting diodes (LEDs) for electrically-active defects. In particular, two laser-based techniques, light-induced voltage alteration and thermally-induced voltage alteration, generate applied voltage maps (AVMs) that provide information on electrically-active defect behavior including turn-on bias, density, and spatial location. Here, multiple commercial LEDs were examined and found to have dark defect signals in the AVM indicating a site of reduced resistance or leakage through the diode. The existence of the dark defect signals in the AVM correlates strongly with an increased forward-bias leakage current. This increased leakage is not present in devices without AVM signals. Transmission electron microscopy analysis of a dark defect signal site revealed a dislocation cluster through the pn junction. The cluster included an open core dislocation. Even though LEDs with few dark AVM defect signals did not correlate strongly with power loss, direct association between increased open core dislocation densities and reduced LED device performance has been presented elsewhere [M. W. Moseley et al., J. Appl. Phys. 117, 095301 (2015)

  7. Characterization of electrically-active defects in ultraviolet light-emitting diodes with laser-based failure analysis techniques

    Energy Technology Data Exchange (ETDEWEB)

    Miller, Mary A.; Tangyunyong, Paiboon; Cole, Edward I. [Sandia National Laboratories, Albuquerque, New Mexico 87185-1086 (United States)

    2016-01-14

    Laser-based failure analysis techniques demonstrate the ability to quickly and non-intrusively screen deep ultraviolet light-emitting diodes (LEDs) for electrically-active defects. In particular, two laser-based techniques, light-induced voltage alteration and thermally-induced voltage alteration, generate applied voltage maps (AVMs) that provide information on electrically-active defect behavior including turn-on bias, density, and spatial location. Here, multiple commercial LEDs were examined and found to have dark defect signals in the AVM indicating a site of reduced resistance or leakage through the diode. The existence of the dark defect signals in the AVM correlates strongly with an increased forward-bias leakage current. This increased leakage is not present in devices without AVM signals. Transmission electron microscopy analysis of a dark defect signal site revealed a dislocation cluster through the pn junction. The cluster included an open core dislocation. Even though LEDs with few dark AVM defect signals did not correlate strongly with power loss, direct association between increased open core dislocation densities and reduced LED device performance has been presented elsewhere [M. W. Moseley et al., J. Appl. Phys. 117, 095301 (2015)].

  8. Composition Related Electrical Active Defect States of InGaAs and GaAsN

    Directory of Open Access Journals (Sweden)

    Arpad Kosa

    2017-01-01

    Full Text Available This paper discusses results of electrically active defect states - deep energy level analysis in InGaAs and GaAsN undoped semiconductor structures grown for solar cell applications. Main attention is focused on composition and growth condition dependent impurities and the investigation of their possible origins. For this purpose a widely utilized spectroscopy method, Deep Level Transient Fourier Spectroscopy, was utilized. The most significant responses of each sample labelled as InG2, InG3 and NG1, NG2 were discussed in detail and confirmed by simulations and literature data. The presence of a possible dual conduction type and dual state defect complex, dependent on the In/N composition, is reported. Beneficial characteristics of specific indium and nitrogen concentrations capable of eliminating or reducing certain point defects and dislocations are stated.

  9. Electrical Characterisation of electron beam exposure induced Defects in silicon

    Energy Technology Data Exchange (ETDEWEB)

    Danga, Helga T., E-mail: helga.danga@up.ac.za; Auret, Francois D.; Coelho, Sergio M.M.; Diale, Mmantsae

    2016-01-01

    The defects introduced in epitaxially grown p-type silicon (Si) during electron beam exposure were electrically characterised using deep level transient spectroscopy (DLTS) and high resolution Laplace-DLTS. In this process, Si samples were first exposed to the conditions of electron beam deposition (EBD) without metal deposition. This is called electron beam exposure (EBE) herein. After 50 minutes of EBE, nickel (Ni) Schottky contacts were fabricated using the resistive deposition method. The defect level observed using the Ni contacts had an activation energy of H(0.55). This defect has an activation energy similar to that of the I-defect. The defect level is similar to that of the HB4, a boron related defect. DLTS depth profiling revealed that H(0.55) could be detected up to a depth of 0.8 μm below the junction. We found that exposing the samples to EBD conditions without metal deposition introduced a defect which was not introduced by the EBD method. We also observed that the damage caused by EBE extended deeper into the material compared to that caused by EBD.

  10. Electrical fingerprint of pipeline defects

    International Nuclear Information System (INIS)

    Mica, Isabella; Polignano, Maria Luisa; Marco, Cinzia De

    2004-01-01

    Pipeline defects are dislocations that connect the source region of the transistor with the drain region. They were widely reported to occur in CMOS, BiCMOS devices and recently in SOI technologies. They can reduce device yield either by affecting the devices functionality or by increasing the current consumption under stand-by conditions. In this work the electrical fingerprint of these dislocations is studied, its purpose is to enable us to identify these defects as the ones responsible for device failure. It is shown that the pipeline defects are responsible for a leakage current from source to drain in the transistors. This leakage has a resistive characteristic and it is lightly modulated by the body bias. It is not sensitive to temperature; vice versa the off-current of a good transistor exhibits the well-known exponential dependence on 1/T. The emission spectrum of these defects was studied and compared with the spectrum of a good transistor. The paper aims to show that the spectrum of a defective transistor is quite peculiar; it shows well defined peaks, whereas the spectrum of a good transistor under saturation conditions is characterized by a broad spectral light emission distribution. Finally the deep-level transient spectroscopy (DLTS) is tried on defective diodes

  11. Effect of vacancy defect on electrical properties of chiral single-walled carbon nanotube under external electrical field

    International Nuclear Information System (INIS)

    Luo Yu-Pin; Tien Li-Gan; Tsai Chuen-Horng; Lee Ming-Hsien; Li Feng-Yin

    2011-01-01

    Ab initio calculations demonstrated that the energy gap modulation of a chiral carbon nanotube with mono-vacancy defect can be achieved by applying a transverse electric field. The bandstructure of this defective carbon nanotube varying due to the external electric field is distinctly different from those of the perfect nanotube and defective zigzag nanotube. This variation in bandstructure strongly depends on not only the chirality of the nanotube and also the applied direction of the transverse electric field. A mechanism is proposed to explain the response of the local energy gap between the valence band maximum state and the local gap state under external electric field. Several potential applications of these phenomena are discussed. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  12. Electrical studies of Fe-related defect complexes in silicon

    Energy Technology Data Exchange (ETDEWEB)

    Tang, Chi Kwong

    2012-09-15

    Iron (Fe) is an important impurity in solar-grade silicon which contributes substantially in degrading the efficiency of solar cells. The degradation is mainly caused by the Fe atoms situating at an unperturbed tetrahedral interstitial sites (Fei) in the silicon crystal, consequently acting as a recombination center. By altering the position and the neighbouring environment at which the Fe atoms reside, there are opportunities in minimizing or neutralizing the electrical activity of Fe. Furthermore, utilizing the high mobility of Fe, one can increase the performance of a device by accumulating the Fe atoms from critical regions into regions where Fe can be tolerated. These approaches can help in realizing high efficient solar cells based on cheap and highly Fe-contaminated silicon. In this work, we have investigated the interaction between Fe and defects relevant to solar cells, using mainly electrical characterization methods such as capacitance-voltage measurement, deep level transient spectroscopy and admittance spectroscopy. From the study of potential hydrogen passivation of Fe, hydrogen was introduced through wet chemical etching and further driven to a defined region. Using depth profiles, it is found that incorporation of hydrogen stimulates the dissociation of the iron-boron (Fe-B) pair, releasing and resulting in the unwanted Fei. At the same time, no passivation of Fe by hydrogen has been observed. On the investigation of the mechanism of phosphorus gettering of metal impurities, vacancies have been generated through proton-irradiation. The resulting irradiation-induced defects were examined for reactions with Fe after heat treatments. Based on the evolution of defect concentrations by isochronal annealings, it is found that Fe interacts with the divacancy and the vacancy-oxygen complexes, forming deep levels of 0.28 eV and 0.34 eV above the valence band edge (EV), respectively. In the search for substitutional Fe to investigate its electrical activity

  13. Absorption and atom mobility in electric field: point defect role in glasses

    International Nuclear Information System (INIS)

    Serruys, Y.; Vigouroux, J.P.

    1986-10-01

    During the surface analysis of dielectric materials, the impinging ionising particles induce point defects localised in the band gap and build an electrical charge. The electric field created by the charged defects modifies the physico-chemical properties of surface and bulk. We show that the fundamental study of defects allows a better understanding of technological phenomena such as dielectric breakdown, fracture and diffusion [fr

  14. Impact of defects on electrical connectivity of monolayer of ideally aligned rods

    International Nuclear Information System (INIS)

    Tarasevich, Yu Yu; Dubinin, D O; Laptev, V V; Lebovka, N I

    2016-01-01

    The processes of formation of electrically conductive films filled by aligned elongated nanoparticles, i.e. nanotubes, nanowires or fibers attract great attention in nanotecnological applications. The alignment can be controlled by external electric fields, evaporation-driven self-assembly and assisted by different other techniques. This work studies the impact of defects on electrical connectivity of ideally aligned monolayer of rods (k-mers). By means of Monte Carlo simulation the problem of percolation for conductive rods on a discrete insulating substrate (square lattice) is analyzed. The aspect ratio of the particles changes within the interval 1-64, the insulating defects were distributed both on the lattice and on the particles. We found that even a very small amount of the insulating defects on the particles can destroy the electrical connectivity. The critical concentration of the defects decreases as the aspect ratio of the particles increases. (paper)

  15. Development of a new technique of localised analysis of electrically active defects in semiconductors

    International Nuclear Information System (INIS)

    Heiser, T.

    1988-07-01

    An analysis technique derived from minority carrier transient spectroscopy (MCTS) was developed. By giving this technique spatial resolution via a focused optical beam, it is possible to exploit the high sensitivity and the spectroscopic nature of the technique to develop a method called scanning MCTS (SMCTS) which can be used to acquire information on lateral distribution of electrically active flaws in semiconductors or associated chemical impurities. The optimum conditions, corresponding to the maximum signal for the highest resolution, can be expressed by the value of a signal parameter. The transients system was digitized, considerably reducing background noise. In order to link the SMCTS to a given flaw, two methods for exploiting the transients are used. The method was verified in tests with artificial defects created by laser and on real cases, arising in industrial processes [fr

  16. RECONSTRUCTION OF POST ELECTRIC BURN DEFECTS OF UPPER LIMB WITH DIFFERENT FLAPS

    Directory of Open Access Journals (Sweden)

    Satyajit

    2015-08-01

    Full Text Available INTRODUCTION: P ost electric burn defects are difficult to manage due to deep injury involving all the structures up to bony level. A good vascularized flap is required to resurface the defect for preventing the complication and for reconstruction of involved structures. AIM: Resurfacing the post electric burn defect with different flaps according to need of the defect. MATERIAL AND METHOD: All patients of electric burn hand and fore arm defect admitted to burn, p lastic and reconstructi ve department of SCB Medical College &hospital, Cuttack between January 2012 to December 2012 were included in the study. During this period the patients were followed up at weekly interval for first 2 month, then at 1 monthly interv al for next 6 - 8 month. OBSERVATION: Out of 40 cases of post electric burn forearm and hand reconstruction, 10 cases underwent groin flap cover, 6 cases underwent abdominal flap cover, 5 cases underwent cross finger flap cover 5 cases underwent free antero lateral thigh flap cover, 4 cases underwent free latissimus dorsi flap cover, 5 cases underwent first dorsal metacarpal artery flap cover, 5 cases reverse radial forearm flap cover. All the defects were resurfaced successfully with flaps. Four had marginal necrosis and six had wound infection. Eventually all flaps settled well without further intervention. Due to involvement of all important tendons & nerves, functional outcome is guarded. DISCUSSION: Hand and forearm are most commonly and most severely aff ected in electric burn injury because they are mostly first part of body to come in contact with electric circuit. Even though at initial part the injury appears to be superficial, deepe r structures like bone, tendon and neurovascular bundles are affected requiring flap cover for future reconstruction of these structures to get functional and sensate hand. CONCLUSION: Reconstruction of post electric burn defect of distal forearm and hand represents great challenge due to

  17. Generation of electrical defects in ion beam assisted deposition of Cu(In,Ga)Se2 thin film solar cells

    International Nuclear Information System (INIS)

    Zachmann, H.; Puttnins, S.; Daume, F.; Rahm, A.; Otte, K.

    2011-01-01

    Thin films of Cu(In,Ga)Se 2 (CIGS) absorber layers for thin film solar cells have been manufactured on polyimide foil in a low temperature, ion beam assisted co-evaporation process. In the present work a set of CIGS thin films was produced with varying selenium ion energy. Solar cell devices have been manufactured from the films and characterized via admittance spectroscopy and capacitance-voltage profiling to determine the influence of the selenium ion energy on the electric parameters of the solar cells. It is shown that the impact of energetic selenium ions in the CIGS deposition process leads to a change in the activation energy and defect density and also in the spatial distribution of electrically active defects. For the interpretation of the results two defect models are taken into account.

  18. Kinetic model for electric-field induced point defect redistribution near semiconductor surfaces

    Science.gov (United States)

    Gorai, Prashun; Seebauer, Edmund G.

    2014-07-01

    The spatial distribution of point defects near semiconductor surfaces affects the efficiency of devices. Near-surface band bending generates electric fields that influence the spatial redistribution of charged mobile defects that exchange infrequently with the lattice, as recently demonstrated for pile-up of isotopic oxygen near rutile TiO2 (110). The present work derives a mathematical model to describe such redistribution and establishes its temporal dependence on defect injection rate and band bending. The model shows that band bending of only a few meV induces significant redistribution, and that the direction of the electric field governs formation of either a valley or a pile-up.

  19. Kinetic model for electric-field induced point defect redistribution near semiconductor surfaces

    International Nuclear Information System (INIS)

    Gorai, Prashun; Seebauer, Edmund G.

    2014-01-01

    The spatial distribution of point defects near semiconductor surfaces affects the efficiency of devices. Near-surface band bending generates electric fields that influence the spatial redistribution of charged mobile defects that exchange infrequently with the lattice, as recently demonstrated for pile-up of isotopic oxygen near rutile TiO 2 (110). The present work derives a mathematical model to describe such redistribution and establishes its temporal dependence on defect injection rate and band bending. The model shows that band bending of only a few meV induces significant redistribution, and that the direction of the electric field governs formation of either a valley or a pile-up.

  20. A study of the electrical properties of defects in silicon

    International Nuclear Information System (INIS)

    Blood, A.M.

    1998-01-01

    hydrogen to passivate the electrical activity of deep levels due to transition metal point defect centres as well as more complex defects in real devices is discussed. (author)

  1. Application of Learning Methods to Local Electric Field Distributions in Defected Dielectric Materials

    Science.gov (United States)

    Ferris, Kim; Jones, Dumont

    2014-03-01

    Local electric fields reflect the structural and dielectric fluctuations in a semiconductor, and affect the material performance both for electron transport and carrier lifetime properties. In this paper, we use the LOCALF methodology with periodic boundary conditions to examine the local electric field distributions and its perturbations for II-VI (CdTe, Cd(1-x)Zn(x)Te) semiconductors, containing Te inclusions and small fluctuations in the local dielectric susceptibility. With inclusion of the induced-field term, the electric field distribution shows enhancements and diminishments compared to the macroscopic applied field, reflecting the microstructure characteristics of the dielectric. Learning methods are applied to these distributions to assess the spatial extent of the perturbation, and determine an electric field defined defect size as compared to its physical dimension. Critical concentrations of defects are assessed in terms of defect formation energies. This work was supported by the US Department of Homeland Security, Domestic Nuclear Detection Office, under competitively awarded contract/IAA HSHQDC-08-X-00872-e. This support does not constitute an express or implied endorsement on the part of the Gov't.

  2. Defect Investigation of Plastically Deformed Al 5454 Wrought Alloy using PADBS and Electrical Measurements

    International Nuclear Information System (INIS)

    Abdel-Rahman, M.; Kamel, N.A.; Lotfy, Y.A.; Badawi, E.A.; Abdel-Rahman, M.A.

    2009-01-01

    Positron Annihilation Doppler Broadening Spectroscopy (PADPS) is a nondestructive technique used in material science. Electrical measurements are one of the oldest techniques used also in material science. This paper aimed to discuss the availability of using both PADPS and electrical measurements as diagnostic techniques to detect the defects in a set of plastically deformed 5454 wrought aluminum alloy. The results of the positron annihilation measurements and the electrical measurements were analyzed in terms of the two-state trapping model. This model can be used to investigate both defect and dislocation densities of the samples under investigation. Results obtained by both nuclear and electrical techniques have been reportedity

  3. Active Thermography for the Detection of Defects in Powder Metallurgy Compacts

    International Nuclear Information System (INIS)

    Benzerrouk, Souheil; Ludwig, Reinhold; Apelian, Diran

    2007-01-01

    Active thermography is an established NDE technique that has become the method of choice in many industrial applications which require non-contact access to the parts under test. Unfortunately, when conducting on-line infrared (IR) inspection of powder metallic compacts, complications can arise due the generally low emissivity of metals and the thermally noisy environment typically encountered in manufacturing plants. In this paper we present results of an investigation that explores the suitability of active IR imaging of powder metallurgy compacts for the detection of surface and sub-surface defects in the pre-sinter state and in an on-line manufacturing setting to ensure complete quality assurance. Additional off-line tests can be carried out for statistical quality analyses. In this research, the IR imaging of sub-surface defects is based on a transient instrumentation approach that relies on an electric control system which synchronizes and monitors the thermal response due to an electrically generated heat source. Preliminary testing reveals that this newly developed pulsed thermography system can be employed for the detection of subsurface defects in green-state parts. Practical measurements agree well with theoretical predictions. The inspection approach being developed can be used for the testing of green-state compacts as they exit the compaction press at speeds of up to 1,000 parts per hour

  4. Electrically active defects in n-type 4H- and 6H-SiC

    Energy Technology Data Exchange (ETDEWEB)

    Doyle, J.P. [Royal Inst. of Tech., Stockholm (Sweden). Dept. of Solid State Electronics]|[IBM Research Div., T.J. Watson Research Center, Yorktown Heights, NY (United States); Aboelfotoh, M.O. [Royal Inst. of Tech., Stockholm (Sweden). Dept. of Solid State Electronics]|[North Carolina State Univ., Dept. of Materials Science and Engineering, Raleigh, NC (United States); Svensson, B.G. [Royal Inst. of Tech., Stockholm (Sweden). Dept. of Solid State Electronics

    1998-06-01

    We have found that in 6H-SiC, irradiation induced defects can become mobile at temperatures as low as 200 C. Through isochronal and isothermal annealing a level at 0.51 eV below the conduction band (with a capture cross-section of 2 x 10{sup -14} cm{sup 2}), appears to disassociate through a first order process with an activation energy of 1.45 eV+/-0.1 eV. In 4H-SiC, we have observed two irradiation induced defects assigned the positions 0.62 eV and 0.68 eV below E{sub c} (with capture cross-sections of 4 x 10{sup -14} cm{sup 2} and 5 x 10{sup -15} cm{sup 2}, respectively) which are found to be unstable at room temperature with time. SIMS analysis indicates that in both 6H- and 4H-SiC the defect levels are not due to the incorporation of the transition metals Ti, V, or Cr. Additionally, in both polytypes of SiC that were examined, the defects are found to display acceptor-like behavior as no evidence of a Poole-Frenkel shift was observed during DLTS measurements. (orig.) 10 refs.

  5. A study of process-related electrical defects in SOI lateral bipolar transistors fabricated by ion implantation

    Science.gov (United States)

    Yau, J.-B.; Cai, J.; Hashemi, P.; Balakrishnan, K.; D'Emic, C.; Ning, T. H.

    2018-04-01

    We report a systematic study of process-related electrical defects in symmetric lateral NPN transistors on silicon-on-insulator (SOI) fabricated using ion implantation for all the doped regions. A primary objective of this study is to see if pipe defects (emitter-collector shorts caused by locally enhanced dopant diffusion) are a show stopper for such bipolar technology. Measurements of IC-VCE and Gummel currents in parallel-connected transistor chains as a function of post-fabrication rapid thermal anneal cycles allow several process-related electrical defects to be identified. They include defective emitter-base and collector-base diodes, pipe defects, and defects associated with a dopant-deficient region in an extrinsic base adjacent its intrinsic base. There is no evidence of pipe defects being a major concern in SOI lateral bipolar transistors.

  6. Electric field dependent paramagnetic defect creation in single step implanted Simox films

    International Nuclear Information System (INIS)

    Leray, J.L.; Margail, J.

    1991-01-01

    X irradiation induced oxygen-vacancy defect creation has been studied in SIMOX produced by single step implantation and annealing. It is shown that SIMOX is substantially more radiation sensitive (for these defects) than thermal or bulk oxide. Irradiation in the presence of an electric field 0.5 -1 MV cm -1 is found to enhance the rate of defect creation by ≥ 2 times. Further enhanced defect creation is observed in SIMOX samples whose substrate has been chemically thinned prior to irradiation. This enhancement is attributed to modification of the network induced by hydrogen introduced during the thinning process

  7. Strip defect recognition in electrical tests of silicon microstrip sensors

    Energy Technology Data Exchange (ETDEWEB)

    Valentan, Manfred, E-mail: valentan@mpp.mpg.de

    2017-02-11

    This contribution describes the measurement procedure and data analysis of AC-coupled double-sided silicon microstrip sensors with polysilicon resistor biasing. The most thorough test of a strip sensor is an electrical measurement of all strips of the sensor; the measured observables include e.g. the strip's current and the coupling capacitance. These measurements are performed to find defective strips, e.g. broken capacitors (pinholes) or implant shorts between two adjacent strips. When a strip has a defect, its observables will show a deviation from the “typical value”. To recognize and quantify certain defects, it is necessary to determine these typical values, i.e. the values the observables would have without the defect. As a novel approach, local least-median-of-squares linear fits are applied to determine these “would-be” values of the observables. A least-median-of-squares fit is robust against outliers, i.e. it ignores the observable values of defective strips. Knowing the typical values allows to recognize, distinguish and quantify a whole range of strip defects. This contribution explains how the various defects appear in the data and in which order the defects can be recognized. The method has been used to find strip defects on 30 double-sided trapezoidal microstrip sensors for the Belle II Silicon Vertex Detector, which have been measured at the Institute of High Energy Physics, Vienna (Austria).

  8. Electrically active defects in p-type silicon after alpha-particle irradiation

    Science.gov (United States)

    Danga, Helga T.; Auret, F. Danie; Tunhuma, Shandirai M.; Omotoso, Ezekiel; Igumbor, Emmanuel; Meyer, Walter E.

    2018-04-01

    In this work, we investigated the defects introduced when boron (B) doped silicon (Si) was irradiated by making use of a 5.4 MeV americium (Am) 241 foil radioactive source with a fluence rate of 7×106 cm-2 s-1 at room temperature. Deep level transient spectroscopy (DLTS) and Laplace-DLTS measurements were used to investigate the electronic properties of the introduced defects. After exposure at a fluence of 5.1×1010 cm-2, the energy levels of the hole traps measured were: H(0.10), H(0.16), H(0.33) and H(0.52) The defect level H(0.10) was tri-vacancy related. H(0.33) was identified as the interstitial carbon (Ci) related defect which was a result of radiation induced damage. H(0.52) was a B-related defect. Explicit deductions about the origin of H(0.16) have not yet been achieved.

  9. Defect Proliferation in Active Nematic Suspensions

    Science.gov (United States)

    Mishra, Prashant; Bowick, Mark J.; Giomi, Luca; Marchetti, M. Cristina

    2014-03-01

    The rich structure of equilibrium nematic suspensions, with their characteristic disclination defects, is modified when active forces come into play. The uniform nematic state is known to be unstable to splay (extensile) or bend (contractile) deformations above a critical activity. At even higher activity the flow becomes oscillatory and eventually turbulent. Using hydrodynamics, we classify the active flow regimes as functions of activity and order parameter friction for both contractile and extensile systems. The turbulent regime is marked by a non-zero steady state density of mobile defect pairs. The defect density itself scales with an ``active Ericksen number,'' defined as the ratio of the rate at which activity is injected into the system to the relaxation rate of orientational deformations. The work at Syracuse University was supported by the NSF on grant DMR-1004789 and by the Syracuse Soft Matter Program.

  10. Study of electrical fatigue by defect engineering in organic light-emitting diodes

    International Nuclear Information System (INIS)

    Gassmann, Andrea; Yampolskii, Sergey V.; Klein, Andreas; Albe, Karsten; Vilbrandt, Nicole; Pekkola, Oili; Genenko, Yuri A.; Rehahn, Matthias; Seggern, Heinz von

    2015-01-01

    Graphical abstract: - Highlights: • Electrical fatigue is investigated in PPV-based polymer light-emitting diodes. • Bromide defects remaining from Gilch synthesis limit PLED lifetime. • Electrical stress yields lower hole mobility and transition to dispersive transport. • Triplet excitons reduce lifetime and EL-emission-induced degradation observed. • Self-consistent drift-diffusion model for charge carrier injection and transport. - Abstract: In this work the current knowledge on the electrical degradation of polymer-based light-emitting diodes is reviewed focusing especially on derivatives of poly(p-phenylene-vinylene) (PPV). The electrical degradation will be referred to as electrical fatigue and is understood as mechanisms, phenomena and material properties that change during continuous operation of the device at constant current. The focus of this review lies especially on the effect of chemical synthesis on the transport properties of the organic semiconductor and the device lifetimes. In addition, the prominent transparent conductive oxide indium tin oxide as well as In 2 O 3 will be reviewed and how their properties can be altered by the processing conditions. The experiments are accompanied by theoretical modeling shining light on how the change of injection barriers, charge carrier mobility or trap density influence the current–voltage characteristics of the diodes and on how and which defects form in transparent conductive oxides used as anode

  11. Recombination-induced formation of hydrogen-defect complexes in 4H and 6H-SiC: electrical and optical characterization

    International Nuclear Information System (INIS)

    Koshka, Y.; Los, A.; Mazzola, M.S.; Sankin, I.

    2003-01-01

    The phenomenon of recombination-induced passivation of defects with hydrogen was investigated in SiC polytypes. Excitation of the hydrogenated samples with above-band gap light at low temperatures resulted in formation of different non-metastable hydrogen-related luminescence centres. Electrical measurements revealed strong recombination-induced passivation of electrical activity of aluminium and boron acceptors in p-type SiC epilayers, which in some cases resulted in inversion of the conductivity type. Athermal migration of hydrogen is considered as a possible mechanism for the observed phenomena

  12. Electric-dipole effect of defects on the energy band alignment of rutile and anatase TiO₂.

    Science.gov (United States)

    Zhang, Daoyu; Yang, Minnan; Dong, Shuai

    2015-11-21

    Titanium dioxide materials have been studied intensively and extensively for photocatalytic applications. A long-standing open question is the energy band alignment of rutile and anatase TiO2 phases, which can affect the photocatalytic process in the composite system. There are basically two contradictory viewpoints about the alignment of these two TiO2 phases supported by the respective experiments: (1) straddling type and (2) staggered type. In this work, our DFT plus U calculations show that the perfect rutile(110) and anatase(101) surfaces have the straddling type band alignment, whereas the surfaces with defects can turn the band alignment into the staggered type. The electric dipoles induced by defects are responsible for the reversal of band alignment. Thus the defects introduced during the preparation and post-treatment processes of materials are probably the answer to the above open question regarding the band alignment, which can be considered in real practice to tune the photocatalytic activity of materials.

  13. Impact of defects on the electrical transport, optical properties and failure mechanisms of GaN nanowires.

    Energy Technology Data Exchange (ETDEWEB)

    Armstrong, Andrew M.; Aubry, Sylvie; Shaner, Eric Arthur; Siegal, Michael P.; Li, Qiming; Jones, Reese E.; Westover, Tyler; Wang, George T.; Zhou, Xiao Wang; Talin, Albert Alec; Bogart, Katherine Huderle Andersen; Harris, C. Thomas; Huang, Jian Yu

    2010-09-01

    We present the results of a three year LDRD project that focused on understanding the impact of defects on the electrical, optical and thermal properties of GaN-based nanowires (NWs). We describe the development and application of a host of experimental techniques to quantify and understand the physics of defects and thermal transport in GaN NWs. We also present the development of analytical models and computational studies of thermal conductivity in GaN NWs. Finally, we present an atomistic model for GaN NW electrical breakdown supported with experimental evidence. GaN-based nanowires are attractive for applications requiring compact, high-current density devices such as ultraviolet laser arrays. Understanding GaN nanowire failure at high-current density is crucial to developing nanowire (NW) devices. Nanowire device failure is likely more complex than thin film due to the prominence of surface effects and enhanced interaction among point defects. Understanding the impact of surfaces and point defects on nanowire thermal and electrical transport is the first step toward rational control and mitigation of device failure mechanisms. However, investigating defects in GaN NWs is extremely challenging because conventional defect spectroscopy techniques are unsuitable for wide-bandgap nanostructures. To understand NW breakdown, the influence of pre-existing and emergent defects during high current stress on NW properties will be investigated. Acute sensitivity of NW thermal conductivity to point-defect density is expected due to the lack of threading dislocation (TD) gettering sites, and enhanced phonon-surface scattering further inhibits thermal transport. Excess defect creation during Joule heating could further degrade thermal conductivity, producing a viscous cycle culminating in catastrophic breakdown. To investigate these issues, a unique combination of electron microscopy, scanning luminescence and photoconductivity implemented at the nanoscale will be used in

  14. Electric field effects on radiation defects annealing in p-InP

    International Nuclear Information System (INIS)

    Sibille, A.

    1983-01-01

    Annealing experiments have been performed on electron irradiated Schottky diodes on p-InP. They show a strong influence of the applied reverse bias during annealing on the recovery of the free holes concentration, as well as on the disappearance of the dominant radiation induced hole traps detected by deep level transient spectroscopy (DLTS). Compensating defects are observed to drift under the action of the electric field and accumulate at the edge of the depleted zone, while the main hole traps created by the irradiation anneal faster when empty of holes or subjected to an electric field. (author)

  15. Electricity Breakdown Management for Sarawak Energy: Use of Condition-Based Equipment for Detection of Defective Insulator

    Science.gov (United States)

    Tan, J. K.; Abas, N.

    2017-07-01

    Managing electricity breakdown is vital since an outage causes economic losses for customers and the utility companies. However, electricity breakdown is unavoidable due to some internal or external factors beyond our control. Electricity breakdown on overhead lines tend occur more frequently because it is prone to external disturbances such as animal, overgrown vegetation and defective pole top accessories. In Sarawak Energy Berhad (SEB), majority of the network are composed of overhead lines and hence, is more prone to failure. Conventional method of equipment inspection and fault finding are not effective to quickly identify the root cause of failure. SEB has engaged the use of corona discharge camera as condition-based monitoring equipment to carry out condition based inspection on the line in order to diagnose the condition of the lines prior to failure. Experimental testing has been carried out to determine the correlation between the corona discharge count and the level of defect on line insulator. The result shall be tabulated and will be used as reference for future scanning and diagnostic on any defect on the lines.

  16. Effect of disorder and defects in ion-implanted semiconductors electrical and physiochemical characterization

    CERN Document Server

    Willardson, Robert K; Christofides, Constantinos; Ghibaudo, Gerard

    2014-01-01

    Defects in ion-implanted semiconductors are important and will likely gain increased importance in the future as annealing temperatures are reduced with successive IC generations. Novel implant approaches, such as MdV implantation, create new types of defects whose origin and annealing characteristics will need to be addressed. Publications in this field mainly focus on the effects of ion implantation on the material and the modification in the implanted layer afterhigh temperature annealing.Electrical and Physicochemical Characterization focuses on the physics of the annealing kine

  17. Point defects in platinum

    International Nuclear Information System (INIS)

    Piercy, G.R.

    1960-01-01

    An investigation was made of the mobility and types of point defect introduced in platinum by deformation in liquid nitrogen, quenching into water from 1600 o C, or reactor irradiation at 50 o C. In all cases the activation energy for motion of the defect was determined from measurements of electrical resistivity. Measurements of density, hardness, and x-ray line broadening were also made there applicable. These experiments indicated that the principal defects remaining in platinum after irradiation were single vacant lattice sites and after quenching were pairs of vacant lattice sites. Those present after deformation In liquid nitrogen were single vacant lattice sites and another type of defect, perhaps interstitial atoms. (author)

  18. Electric resistivity of 241-americium and 244-curium metals. Creation of defects and isochronous annealing of 241-americium metal after self-irradiation

    International Nuclear Information System (INIS)

    Schenkel, R.

    1977-03-01

    The temperature dependence of the electrical resistivity of thin films of bulk 241 Am metal were measured between 300 and 4.5 K. The room temperature resistivity was found to be 68.90μΩcm. At room temperature the electrical resistivity of americium increases with pressure (3% up to 13 kbar). The application of 13 kbar pressure did not change the low temperature power law in the electrical resistivity. The resistivity vs temperature curve can be explained by assuming s-d scattering of conduction electrons. The localized 5f electrons are considered to be about 5eV below the Fermi level. Americium therefore should be the first lanthanide-like element in the actinide series. The defect production due to self-irradiation damage was studied by measuring the increase of the resistivity at 4.2 K over a period of 738 h. A saturation resistivity of 16.036 μΩcm was found corresponding to a defect concentration of about 0.22 a/o. After isochronal annealing two recovery stages were observed at about 65 and 145 K. The two stages shift with increasing initial defect concentration to lower temperatures. Estimates of the activation energies and the reaction order were made and possible defect reactions suggested. The magnetic contribution to the electrical resistivity of curium, which shows an antiferromagnetic transition at 52.5 k, was obtained by subtracting the resistivity of americium (to be considered as phonon part). Comparison with theoretical models were made. At low temperatures the measurements are strongly affected by self-irradiation damage [drho/dt(t=0)=9.8μΩcm/h

  19. Imaging active topological defects in carbon nanotubes

    Science.gov (United States)

    Suenaga, Kazu; Wakabayashi, Hideaki; Koshino, Masanori; Sato, Yuta; Urita, Koki; Iijima, Sumio

    2007-06-01

    A single-walled carbon nanotube (SWNT) is a wrapped single graphene layer, and its plastic deformation should require active topological defects-non-hexagonal carbon rings that can migrate along the nanotube wall. Although in situ transmission electron microscopy (TEM) has been used to examine the deformation of SWNTs, these studies deal only with diameter changes and no atomistic mechanism has been elucidated experimentally. Theory predicts that some topological defects can form through the Stone-Wales transformation in SWNTs under tension at 2,000 K, and could act as a dislocation core. We demonstrate here, by means of high-resolution (HR)-TEM with atomic sensitivity, the first direct imaging of pentagon-heptagon pair defects found in an SWNT that was heated at 2,273 K. Moreover, our in situ HR-TEM observation reveals an accumulation of topological defects near the kink of a deformed nanotube. This result suggests that dislocation motions or active topological defects are indeed responsible for the plastic deformation of SWNTs.

  20. Influence of ion beam irradiation induced defects on the structural, optical and electrical properties of tellurium nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Kumar, Narinder [Department of Physics, Chaudhary Devi Lal University, Sirsa, 125055 (India); Department of Physics, Haryana College of Technology & Management, Kaithal, 136027 (India); Kumar, Rajesh [Department of Physics, RN College of Engineering & Technology, Madlauda, 132104 (India); Kumar, Sushil, E-mail: sushil_phys@rediffmail.com [Department of Physics, Chaudhary Devi Lal University, Sirsa, 125055 (India); Chakarvarti, S.K. [Research and Development, Manav Rachana International University, Faridabad, 121001 (India)

    2016-11-01

    In this study, tellurium nanowires were electrodeposited into the polymer membranes from aqueous acidic bath containing HTeO{sub 2}{sup +} ions. The field emission scanning electron microscopy (FESEM) images confirmed the formation of uniform and straight nanowires. The influence of 110 MeV Ni{sup 8+} ion irradiation induced defects on the structural, optical and electrical properties of as–deposited tellurium nanowires were examined using X-ray diffraction (XRD), UV–visible absorption spectroscopy and current–voltage (I–V) measurements. The XRD data depicted the hexagonal phase of tellurium nanowires and further revealed a variation in the intensity of diffraction peaks of ion irradiated nanowires. Williamson–Hall (WH) analysis is used for convoluting the size and microstrain contributions to the width of diffraction peaks. Tellurium nanowires exhibited a distinct absorbance band in the visible region at 686 nm, while this was absent in bulk tellurium. Electrical properties of nanowires are explored on the basis of I–V curves, which revealed a significant increase in the electrical conductivity of irradiated nanowires. A possible mechanism for the enhanced electrical conductivity is the increase in carrier concentration due to thermally excited defects. The defects produced by ion irradiation play a vital role in modifying the properties of semiconducting nanowires. - Highlights: • 110 MeV Ni{sup 8+} ion beam induced changes in tellurium nanowires have been examined. • Nanowires were prepared using template electrodeposition method. • Irradiation improved the electrical conductivity of tellurium nanowires. • Mechanism for enhanced electrical conductivity of irradiated nanowires was discussed.

  1. Electrical properties of Schottky barrier diodes fabricated on (001) β-Ga2O3 substrates with crystal defects

    Science.gov (United States)

    Oshima, Takayoshi; Hashiguchi, Akihiro; Moribayashi, Tomoya; Koshi, Kimiyoshi; Sasaki, Kohei; Kuramata, Akito; Ueda, Osamu; Oishi, Toshiyuki; Kasu, Makoto

    2017-08-01

    The electrical properties of Schottky barrier diodes (SBDs) on a (001) β-Ga2O3 substrate were characterized and correlated with wet etching-revealed crystal defects below the corresponding Schottky contacts. The etching process revealed etched grooves and etched pits, indicating the presence of line-shaped voids and small defects near the surface, respectively. The electrical properties (i.e., leakage currents, ideality factor, and barrier height) exhibited almost no correlation with the density of the line-shaped voids. This very weak correlation was reasonable considering the parallel positional relation between the line-shaped voids extending along the [010] direction and the (001) basal plane in which the voids are rarely exposed on the initial surface in contact with the Schottky metals. The distribution of small defects and SBDs with unusually large leakage currents showed similar patterns on the substrate, suggesting that these defects were responsible for the onset of fatal leak paths. These results will encourage studies on crystal defect management of (001) β-Ga2O3 substrates for the fabrication of devices with enhanced performance using these substrates.

  2. Curvature-induced defect unbinding and dynamics in active nematic toroids

    Science.gov (United States)

    Ellis, Perry W.; Pearce, Daniel J. G.; Chang, Ya-Wen; Goldsztein, Guillermo; Giomi, Luca; Fernandez-Nieves, Alberto

    2018-01-01

    Nematic order on curved surfaces is often disrupted by the presence of topological defects, which are singular regions in which the orientational order is undefined. In the presence of force-generating active materials, these defects are able to migrate through space like swimming microorganisms. We use toroidal surfaces to show that despite their highly chaotic and non-equilibrium dynamics, pairs of defects unbind and segregate in regions of opposite Gaussian curvature. Using numerical simulations, we find that the degree of defect unbinding can be controlled by tuning the system activity, and even suppressed in strongly active systems. Furthermore, by using the defects as active microrheological tracers and quantitatively comparing our experimental and theoretical results, we are able to determine material properties of the active nematic. Our results illustrate how topology and geometry can be used to control the behaviour of active materials, and introduce a new avenue for the quantitative mechanical characterization of active fluids.

  3. Hydrogen interaction with radiation defects in p-type silicon

    CERN Document Server

    Feklisova, O V; Yakimov, E B; Weber, J

    2001-01-01

    Hydrogen interaction with radiation defects in p-type silicon has been investigated by deep-level non-stationary spectroscopy. Hydrogen is introduced into the high-energy electron-irradiated crystals under chemical etching in acid solutions at room temperature followed by the reverse-bias annealing at 380 K. It is observed that passivation of the irradiation-induced defects is accompanied by formation of novel electrically active defects with hydrogen-related profiles. Effect of hydrogen on the electrical activity of the C sub s C sub i complexes is shown for the first time. Based on the spatial distribution and passivation kinetics, possible nature of the novel complexes is analyzed. The radii for hydrogen capture by vacancies, K-centers, C sub s C sub i centers and the novel complexes are determined

  4. Electric field deformation in diamond sensors induced by radiation defects

    Energy Technology Data Exchange (ETDEWEB)

    Kassel, Florian; Boer, Wim de; Boegelspacher, Felix; Dierlamm, Alexander; Mueller, Thomas; Steck, Pia [Institut fuer Experimentelle Kernphysik (IEKP), Karlsruher Institut fuer Technologie (KIT) (Germany); Dabrowski, Anne; Guthoff, Moritz [CERN (Switzerland)

    2016-07-01

    The BCML system is a beam monitoring device in the CMS experiment at the LHC. As detectors 32 poly-crystalline CVD diamond sensors are positioned in a ring around the beam pipe at a distance of ±1.8 m and ±14.4 m from the interaction point. The radiation hardness of the diamond sensors in terms of measured signal during operation was significantly lower than expected from laboratory measurements. At high particle rates, such as those occurring during the operation of the LHC, a significant fraction of the defects act as traps for charge carriers. This space charge modifies the electrical field in the sensor bulk leading to a reduction of the charge collection efficiency (CCE). A diamond irradiation campaign was started to investigate the rate dependent electrical field deformation with respect to the radiation damage. Besides the electrical field measurements via the Transient Current Technique, the CCE was measured. The experimental results were used to create an effective trap model that takes the radiation damage into account. Using this trap model the rate dependent electrical field deformation and the CCE were simulated with the software ''SILVACO TCAD''. This talk compares the experimental measurement results with the simulations.

  5. Influence of defects on the effective electrical conductivity of a monolayer produced by random sequential adsorption of linear k-mers onto a square lattice

    Science.gov (United States)

    Tarasevich, Yuri Yu.; Laptev, Valeri V.; Goltseva, Valeria A.; Lebovka, Nikolai I.

    2017-07-01

    The effect of defects on the behaviour of electrical conductivity, σ, in a monolayer produced by the random sequential adsorption of linear k-mers (particles occupying k adjacent sites) onto a square lattice is studied by means of a Monte Carlo simulation. The k-mers are deposited on the substrate until a jamming state is reached. The presence of defects in the lattice (impurities) and of defects in the k-mers with concentrations of dl and dk, respectively, is assumed. The defects in the lattice are distributed randomly before deposition and these lattice sites are forbidden for the deposition of k-mers. The defects of the k-mers are distributed randomly on the deposited k-mers. The sites filled with k-mers have high electrical conductivity, σk, whereas the empty sites, and the sites filled by either types of defect have a low electrical conductivity, σl, i.e., a high-contrast, σk /σl ≫ 1, is assumed. We examined isotropic (both the possible x and y orientations of a particle are equiprobable) and anisotropic (all particles are aligned along one given direction, y) deposition. To calculate the effective electrical conductivity, the monolayer was presented as a random resistor network and the Frank-Lobb algorithm was used. The effects of the concentrations of defects dl and dk on the electrical conductivity for the values of k =2n, where n = 1 , 2 , … , 5, were studied. Increase of both the dl and dk parameters values resulted in decreases in the value of σ and the suppression of percolation. Moreover, for anisotropic deposition the electrical conductivity along the y direction was noticeably larger than in the perpendicular direction, x. Phase diagrams in the (dl ,dk)-plane for different values of k were obtained.

  6. Role of Defects and Adsorbed Water Film in Influencing the Electrical, Optical and Catalytic Properties of Transition Metal Oxides

    Science.gov (United States)

    Wang, Qi

    Transition metal oxides (TMOs) constitute a large group of materials that exhibit a wide range of optical, electrical, electrochemical, dielectric and catalytic properties, and thus making them highly regarded as promising materials for a variety of applications in next generation electronic, optoelectronic, catalytic, photonic, energy storage and energy conversion devices. Some of the unique properties of TMOs are their strong electron-electron correlations that exists between the valence electrons of narrow d- or f-shells and their ability to exist in variety of oxidation states. This gives TMOs an enormous range of fascinating electronic and other physical properties. Many of these remarkable properties of TMOs arises from the complex surface charge transfer processes at the oxide surface/electrochemical redox species interface and non-stoichiometry due to the presence of lattice vacancies that may cause significant perturbation to the electronic structure of the material. Stoichiometry, oxidation state of the metal center and lattice vacancy defects all play important roles in affecting the physical properties, electronic structures, device behavior and other functional properties of TMOs. However, the underlying relationships between them is not clearly known. For instance, the exchange of electrons between adsorbates and defects can lead to the passivation of existing defect states or formation of new defects, both of which affect defect equilibria, and consequently, functional properties. In depth understanding of the role of lattice defects on the electrical, catalytic and optical properties of TMOs is central to further expansion of the technological applications of TMO based devices. The focus of this work is to elucidate the interactions of vacancy defects with various electrochemical adsorbates in TMOs. The ability to directly probe the interactions of vacancy defects with gas and liquid phase species under in-operando conditions is highly desirable to

  7. A defect model for UO2+x based on electrical conductivity and deviation from stoichiometry measurements

    Science.gov (United States)

    Garcia, Philippe; Pizzi, Elisabetta; Dorado, Boris; Andersson, David; Crocombette, Jean-Paul; Martial, Chantal; Baldinozzi, Guido; Siméone, David; Maillard, Serge; Martin, Guillaume

    2017-10-01

    Electrical conductivity of UO2+x shows a strong dependence upon oxygen partial pressure and temperature which may be interpreted in terms of prevailing point defects. A simulation of this property along with deviation from stoichiometry is carried out based on a model that takes into account the presence of impurities, oxygen interstitials, oxygen vacancies, holes, electrons and clusters of oxygen atoms. The equilibrium constants for each defect reaction are determined to reproduce the experimental data. An estimate of defect concentrations and their dependence upon oxygen partial pressure can then be determined. The simulations carried out for 8 different temperatures (973-1673 K) over a wide range of oxygen partial pressures are discussed and resulting defect equilibrium constants are plotted in an Arrhenius diagram. This provides an estimate of defect formation energies which may further be compared to other experimental data or ab-initio and empirical potential calculations.

  8. High resolution deep level transient spectroscopy and process-induced defects in silicon

    International Nuclear Information System (INIS)

    Evans-Freeman, J.H.; Emiroglu, D.; Vernon-Parry, K.D.

    2004-01-01

    High resolution, or Laplace, deep level transient spectroscopy (LDLTS) enables the identification of very closely spaced energetic levels in a semiconductor bandgap. DLTS may resolve peaks with a separation of tens of electron volts, but LDLTS can resolve defect energy separations as low as a few MeV. In this paper, we present results from LDLTS applied to ion implantation-induced defects in silicon, with particular emphasis on characterisation of end-of-range interstitial type defects. Silicon was implanted with a variety of ions from mass 28 to 166. A combination of LDLTS and direct capture cross-section measurements was employed to show that electrically active small extended defects were present in the as-implanted samples. Larger dislocations were then generated in Si by oxygenation to act as a control sample. These stacking faults had typical lengths of microns, and their electrical activity was subsequently characterised by LDLTS. This was to establish the sensitivity of LDLTS to defects whose carrier capture is characterised by a non-exponential filling process and an evolving band structure as carrier capture proceeds. The LDLTS spectra show several components in capacitance transients originating from both the end-of-range defects, and the stacking faults, and also clearly show that the carrier emission rates reduce as these extended defects fill with carriers. The end-of-range defects and the stacking faults are shown to have the same electrical behaviour

  9. Metastable light induced defects in pentacene

    Energy Technology Data Exchange (ETDEWEB)

    Liguori, R.; Aprano, S.; Rubino, A. [Department of Industrial Engineering (DIIn), University of Salerno, via Giovanni Paolo II, 132, 84084 Fisciano (Italy)

    2014-02-21

    In this study we analyzed one of the environmental factors that could affect organic materials. Pentacene thin film samples were fabricated and the degradation of their electrical characteristics was measured when the devices were exposed to ultraviolet light irradiation. The results have been reported in terms of a trap density model, which provides a description of the dynamics of light induced electrically active defects in an organic semiconductor.

  10. SAFETY ALERT: Electrical insulation defect on safety helmets

    CERN Multimedia

    HSE Unit

    2013-01-01

    Contrarily to the information provided until 31 May 2013, some “Euro Protection” safety helmets do not respect any of the requirements for electrical insulation.   This alert concerns the safety helmets identified under the following SCEM numbers: 50.43.30.050.4 white 50.43.30.060.2 yellow 50.43.30.070.0 blue This amounts up to several hundreds of helmets on the CERN site. People who need to wear an electrically insulated safety helmet for their activities, must from now on acquire a duly insulated item to be found on the CERN store under the following SCEM numbers: 50.43.30.210.6: Petzl Vertex ST Helmet (without vent) 50.43.30.300.1: IDRA Helmet with a visor for electrical work As for the people who do not need to wear an electrically insulated helmet for their activities, they can continue working with the aforementioned helmets. For your information, please take note of the maximum use limit of each helmet: “Euro Protection” Safety Helme...

  11. Correlation between morphological defects, electron beam-induced current imaging, and the electrical properties of 4H-SiC Schottky diodes

    International Nuclear Information System (INIS)

    Wang, Y.; Ali, G.N.; Mikhov, M.K.; Vaidyanathan, V.; Skromme, B.J.; Raghothamachar, B.; Dudley, M.

    2005-01-01

    Defects in SiC degrade the electrical properties and yield of devices made from this material. This article examines morphological defects in 4H-SiC and defects visible in electron beam-induced current (EBIC) images and their effects on the electrical characteristics of Schottky diodes. Optical Nomarski microscopy and atomic force microscopy were used to observe the morphological defects, which are classified into 26 types based on appearance alone. Forward and reverse current-voltage characteristics were used to extract barrier heights, ideality factors, and breakdown voltages. Barrier heights decrease about linearly with increasing ideality factor, which is explained by discrete patches of low barrier height within the main contact. Barrier height, ideality, and breakdown voltage all degrade with increasing device diameter, suggesting that discrete defects are responsible. Electroluminescence was observed under reverse bias from microplasmas associated with defects containing micropipes. EBIC measurements reveal several types of features corresponding to recombination centers. The density of dark spots observed by EBIC correlates strongly with ideality factor and barrier height. Most morphological defects do not affect the reverse characteristics when no micropipes are present, but lower the barrier height and worsen the ideality factor. However, certain multiple-tailed defects, irregularly shaped defects and triangular defects with 3C inclusions substantially degrade both breakdown voltage and barrier height, and account for most of the bad devices that do not contain micropipes. Micropipes in these wafers are also frequently found to be of Type II, which do not run parallel to the c axis

  12. Study on electrical defects level in single layer two-dimensional Ta2O5

    Science.gov (United States)

    Dahai, Li; Xiongfei, Song; Linfeng, Hu; Ziyi, Wang; Rongjun, Zhang; Liangyao, Chen; David, Wei Zhang; Peng, Zhou

    2016-04-01

    Two-dimensional atomic-layered material is a recent research focus, and single layer Ta2O5 used as gate dielectric in field-effect transistors is obtained via assemblies of Ta2O5 nanosheets. However, the electrical performance is seriously affected by electronic defects existing in Ta2O5. Therefore, spectroscopic ellipsometry is used to calculate the transition energies and corresponding probabilities for two different charged oxygen vacancies, whose existence is revealed by x-ray photoelectron spectroscopy analysis. Spectroscopic ellipsometry fitting also calculates the thickness of single layer Ta2O5, exhibiting good agreement with atomic force microscopy measurement. Nondestructive and noncontact spectroscopic ellipsometry is appropriate for detecting the electrical defects level of single layer Ta2O5. Project supported by the National Natural Science Foundation of China (Grant Nos. 11174058 and 61376093), the Fund from Shanghai Municipal Science and Technology Commission (Grant No. 13QA1400400), the National Science and Technology Major Project, China (Grant No. 2011ZX02707), and the Innovation Program of Shanghai Municipal Education Commission (Grant No. 12ZZ010).

  13. Electrical Conductivity of Rocks and Dominant Charge Carriers. Part 1; Thermally Activated Positive Holes

    Science.gov (United States)

    Freund, Friedemann T.; Freund, Minoru M.

    2012-01-01

    The prevailing view in the geophysics community is that the electrical conductivity structure of the Earth's continental crust over the 5-35 km depth range can best be understood by assuming the presence of intergranular fluids and/or of intragranular carbon films. Based on single crystal studies of melt-grown MgO, magma-derived sanidine and anorthosite feldspars and upper mantle olivine, we present evidence for the presence of electronic charge carriers, which derive from peroxy defects that are introduced during cooling, under non-equilibrium conditions, through a redox conversion of pairs of solute hydroxyl arising from dissolution of H2O.The peroxy defects become thermally activated in a 2-step process, leading to the release of defect electrons in the oxygen anion sublattice. Known as positive holes and symbolized by h(dot), these electronic charge carriers are highly mobile. Chemically equivalent to O(-) in a matrix of O(2-) they are highly oxidizing. Being metastable they can exist in the matrix of minerals, which crystallized in highly reduced environments. The h(dot) are highly mobile. They appear to control the electrical conductivity of crustal rocks in much of the 5-35 km depth range.

  14. Defects in silicon carbide grown by fluorinated chemical vapor deposition chemistry

    Science.gov (United States)

    Stenberg, Pontus; Booker, Ian D.; Karhu, Robin; Pedersen, Henrik; Janzén, Erik; Ivanov, Ivan G.

    2018-04-01

    Point defects in n- and p-type 4H-SiC grown by fluorinated chemical vapor deposition (CVD) have been characterized optically by photoluminescence (PL) and electrically by deep-level transient spectroscopy (DLTS) and minority carrier transient spectroscopy (MCTS). The results are considered in comparison with defects observed in non-fluorinated CVD growth (e.g., using SiH4 instead of SiF4 as silicon precursor), in order to investigate whether specific fluorine-related defects form during the fluorinated CVD growth, which might prohibit the use of fluorinated chemistry for device-manufacturing purposes. Several new peaks identifying new defects appear in the PL of fluorinated-grown samples, which are not commonly observed neither in other halogenated chemistries, nor in the standard CVD chemistry using silane (SiH4). However, further investigation is needed in order to determine their origin and whether they are related to incorporation of F in the SiC lattice, or not. The electric characterization does not find any new electrically-active defects that can be related to F incorporation. Thus, we find no point defects prohibiting the use of fluorinated chemistry for device-making purposes.

  15. Characteristics Associated With Active Defects in Juvenile Spondylolysis.

    Science.gov (United States)

    Gum, Jeffrey L; Crawford, Charles H; Collis, Philip C; Carreon, Leah Y

    2015-10-01

    Diagnosis is crucial in early-stage lumbar spondylolysis, as osseous healing can occur with conservative treatment. Single-photon emission computed tomography (SPECT) traditionally has been the most sensitive modality for diagnosing active (early) spondylolysis. More recently, high signal change (HSC) in the pedicle or pars interarticularis on fluid-specific (T2) magnetic resonance imaging (MRI) has been shown to be important in the diagnosis of early spondylolysis. We conducted a study to determine the clinical and radiographic characteristics associated with the diagnosis of early or active spondylolysis. Fifty-seven patients with a total of 108 pars defects and a mean age of 14.6 years were retrospectively identified. Defects with a positive SPECT or HSC on T2 MRI were classified as active. There were 49 active and 59 inactive defects. The active and inactive groups did not differ in age, body mass index, symptom duration, lumbar lordosis, pelvic incidence, slip percentage, or laterality. There was a difference in sex (35 vs 19 males; P spondylolysis appears to be associated with male patients and the absence of listhesis, which may be important in identifying patients with a higher potential to experience osseous healing with nonoperative treatment.

  16. In-situ study of cascade defects in silver by simultaneous transmission electron microscopy and electrical resistivity measurements at low temperatures

    International Nuclear Information System (INIS)

    Haga, K.; King, W.E.; Merkle, K.L.; Meshii, M.

    1985-12-01

    A helium-cooled double-tilt specimen stage for transmission electron microscopy (TEM) with the capability of simultaneous electrical resistivity measurements was constructed and used to study defect-production, migration, clustering and recovery processes in ion-irradiated silver. Vacuum-evaporated thin film specimens were irradiated with 1 MeV Kr + -ions up to a dose of 4.0 x 10 10 ions/cm 2 , at T = 10 0 K in the microscope, using the HVEM-tandem accelerator ion beam interface system in the Argonne National Laboratory Electron Microscopy Center. Cascade defect formation during ion bombardment at the low temperature was directly observed both by TEM and electrical resistivity measurements. Ion bombardment created groups of defect clusters with strong strain fields which gave rise to TEM contrast. The specimen resistivity was increased by 16% during the irradiation. Subsequent microstructural changes and resistivity recovery during isochronal annealing were monitored up to room temperature. 58.3% of the irradiation induced resistivity was recovered, while significant reduction in the size of black spot defect clusters was observed by TEM. A small fraction of clusters disappeared, while no nucleation of new defect clusters was observed

  17. Right atrial isolation associated with atrial septal closure in patients with atrial septal defect and chronic atrial fibrillation.

    Science.gov (United States)

    Minzioni, G; Graffigna, A; Pagani, F; Vigano, M

    1993-12-01

    To restore sinus rhythm in the remaining heart chambers of six adult patients with atrial septal defect and chronic or paroxysmal atrial fibrillation, electrical, right atrial isolation associated with surgical correction of the defect was performed. All but one patient was free from atrial fibrillation without medication 2-25 months after operation. The isolated right atrial appendages showed intrinsic rhythmical activity in five patients and no electrical activity in one. Right atrial isolation is a safe and effective procedure that abolishes atrial fibrillation in patients with arrhythmia after surgical correction of atrial septal defect.

  18. Electronic transport of bilayer graphene with asymmetry line defects

    International Nuclear Information System (INIS)

    Zhao Xiao-Ming; Chen Chan; Liang Ying; Kou Su-Peng; Wu Ya-Jie

    2016-01-01

    In this paper, we study the quantum properties of a bilayer graphene with (asymmetry) line defects. The localized states are found around the line defects. Thus, the line defects on one certain layer of the bilayer graphene can lead to an electric transport channel. By adding a bias potential along the direction of the line defects, we calculate the electric conductivity of bilayer graphene with line defects using the Landauer–Büttiker theory, and show that the channel affects the electric conductivity remarkably by comparing the results with those in a perfect bilayer graphene. This one-dimensional line electric channel has the potential to be applied in nanotechnology engineering. (paper)

  19. Effects of plasma-induced defects on electrical characteristics of AlGaN/GaN heterostructure before and after low-temperature annealing

    International Nuclear Information System (INIS)

    Takimoto, Takuma; Takeshita, Koji; Nakamura, Seiji; Okumura, Tsugunori

    2014-01-01

    We investigated the electrical characteristics of an AlGaN/GaN heterostructure exposed to Ar plasma. In the near-surface region of the AlGaN/GaN heterostructure, we found that plasma-induced defects reduced the two-dimensional electron gas (2DEG) density and mobility at the AlGaN/GaN interface with increasing exposure time. The decrease in 2DEG density suggests that plasma-induced disordering partly extinguishes the piezo-polarization of the AlGaN layer, that the effective Schottky barrier height is increased by the introduction of negatively changed defects, or that the negatively charged defects induced during plasma exposure deactivate or compensate Si donors. In addition, we investigated the postannealing behavior of plasma-induced defects in the AlGaN/GaN heterostructure as well as in the n-GaN layer under an applied bias voltage. - Highlights: • We have investigated the electrical characteristics of the AlGaN/GaN heterostructure. • Electrons under the AlGaN/GaN interface are decreased by plasma exposure. • Post-annealing treatment with gate bias recovers the degradation caused by defects

  20. Influence of radiation defects on electrical losses in silicon diodes irradiated with electrons

    International Nuclear Information System (INIS)

    Poklonski, N. A.; Gorbachuk, N. I.; Shpakovski, S. V.; Lastovskii, S. B.; Wieck, A.

    2010-01-01

    Silicon diodes with a p + -n junction irradiated with 3.5-MeV electrons (the fluence ranged from 10 15 to 4 x 10 16 cm -2 ) have been studied. It is established that the dependence of the tangent of the angle of electrical losses tanδ on the frequency f of alternating current in the range f = 10 2 -10 6 Hz is a nonmonotonic function with two extrema: a minimum and a maximum. Transformation of the dependences tanδ(f) as the electron fluence and annealing temperature are increased is caused by a variation in the resistance of n-Si (the base region of the diodes) as a result of accumulation (as the fluence is increased) or disappearance and reconfiguration (in the course of annealing) of radiation defects. The role of time lag of the defect recharging in the formation of tanδ(f) is insignificant.

  1. Defects in semiconductors

    CERN Document Server

    Romano, Lucia; Jagadish, Chennupati

    2015-01-01

    This volume, number 91 in the Semiconductor and Semimetals series, focuses on defects in semiconductors. Defects in semiconductors help to explain several phenomena, from diffusion to getter, and to draw theories on materials' behavior in response to electrical or mechanical fields. The volume includes chapters focusing specifically on electron and proton irradiation of silicon, point defects in zinc oxide and gallium nitride, ion implantation defects and shallow junctions in silicon and germanium, and much more. It will help support students and scientists in their experimental and theoret

  2. Defect structure, nonstoichiometry, and phase stability of Ca-doped YCrO3

    International Nuclear Information System (INIS)

    Carini, G.F. II; Anderson, H.U.; Nasrallah, M.M.; Sparlin, D.M.

    1991-01-01

    The dependence of the defect structure of Ca-doped YCrO 3 on oxygen activity and temperature was investigated by high temperature thermogravimetric measurements. Defect models developed from electrical conductivity data obtained in a previous study were used to interpret the thermogravimetric data. A correlation was found between the electrical conductivity and the thermogravimetric data which suggested that these data were concomitantly dependent on the acceptor dopant and oxygen vacancy dependence of the thermodynamic parameters. Kroeger-Vink type diagrams showing the regions of stability with respect to oxygen activity and temperature were constructed. The TGA data show that Ca-doped YCrO 3 is even more stable toward reduction than doped LaCrO 3

  3. Point defects and electric compensation in gallium arsenide single crystals; Punktdefekte und elektrische Kompensation in Galliumarsenid-Einkristallen

    Energy Technology Data Exchange (ETDEWEB)

    Kretzer, Ulrich

    2007-12-10

    In the present thesis the point-defect budget of gallium arsenide single crystals with different dopings is studied. It is shown, in which way the concentration of the single point defects depende on the concentration of the dopants, the stoichiometry deviation, and the position of the Fermi level. For this serve the results of the measurement-technical characterization of a large number of samples, in the fabrication of which these parameters were directedly varied. The main topic of this thesis lies in the development of models, which allow a quantitative description of the experimentally studied electrical and optical properties of gallium arsenide single crystals starting from the point-defect concentrations. Because from point defects charge carriers can be set free, their concentration determines essentially the charge-carrier concentration in the bands. In the ionized state point defects act as scattering centers for free charge carriers and influence by this the drift mobility of the charge carriers. A thermodynamic modeling of the point-defect formation yields statements on the equilibrium concentrations of the point defects in dependence on dopant concentration and stoichiometry deviation. It is show that the electrical properties of the crystals observed at room temperature result from the kinetic suppression of processes, via which the adjustment of a thermodynamic equilibrium between the point defects is mediated. [German] In der vorliegenden Arbeit wird der Punktdefekthaushalt von Galliumarsenid-Einkristallen mit unterschiedlichen Dotierungen untersucht. Es wird gezeigt, in welcher Weise die Konzentration der einzelnen Punktdefekte von der Konzentration der Dotierstoffe, der Stoechiometrieabweichung und der Lage des Ferminiveaus abhaengen. Dazu dienen die Ergebnisse der messtechnischen Charakterisierung einer grossen Anzahl von Proben, bei deren Herstellung diese Parameter gezielt variiert wurden. Der Schwerpunkt der Arbeit liegt in der Entwicklung

  4. Study by electrical resistivity measurements of the radiation induced defects in gold-copper alloys

    International Nuclear Information System (INIS)

    Alamo, A.

    1983-09-01

    Point defect production rate in Cu 3 Au and CuAu ordered and disordered alloys was studied by electrical resistivity measurements, as function of electron energy ranging from 0.4 to 2.5 MeV. The irradiations were performed at 20 K. The production curves are analysed using a displacement model for diatomic materials and the following values are found for the average displacement threshold energies: Esub(d)sup(Cu) approximately 22 eV and Esub(d)sup(Au) approximately 18 eV, for both alloys. Elementary defect migration was examined during isochronal annealing performed after irradiations. A simple type of self-interstitial seems to migrate in the ordered alloys: probably a split-interstitial of Cu-Cu type. Interstitial migration seems to be very difficult and complex in the disordered alloys. Vacancy mobility was detected after recovery at temperature above 300 K and was responsible of an increase of long range order. Fast neutron irradiations at 20 K produce disordering in the initially ordered alloys. Ratios of 38 and 18 antistructure defects per atomic displacement are estimated for Cu 3 Au and CuAu respectively [fr

  5. Study of defect annealing behaviour in neutron irradiated Cu and Fe using positron annihilation and electrical conductivity

    International Nuclear Information System (INIS)

    Eldrup, M.; Singh, B.N.

    2000-01-01

    To compare the defect accumulation and the annealing behaviour in an fcc and a bcc metal, OFHC-Cu and pure Fe were neutron irradiated at 100 deg. C to a fluence of 1.5 x 10 24 n/m 2 , (E > 1 MeV). Isochronal annealing was carried out and the annealing behaviour followed by positron annihilation spectroscopy (PAS) as well as electrical conductivity measurements. The results for the two specimens in the as-irradiated state are very different. In Cu the defect positron lifetime is characteristic of single vacancies, very small vacancy clusters or stacking fault tetrahedra, while in Fe the defect lifetimes confirm the presence of micro-voids and voids. The electrical conductivity, on the other hand does not discriminate between the two types of damage in the irradiated specimens. During annealing of the irradiated Fe below stage V, the average void size grows by migration and coalescence of the micro-voids and voids. At and above stage V the void density decreases and the voids finally anneal out at ∼500 deg. C. In contrast, the annealing of irradiated Cu below stage V does not yield any evidence for the evolution of micro-voids or voids. The implications of these results are discussed. One conclusion is that neutron irradiation below stage V causes higher void swelling in bcc iron than in fcc copper

  6. Observation of nanometer-sized electro-active defects in insulating layers by fluorescence microscopy and electrochemistry.

    Science.gov (United States)

    Renault, Christophe; Marchuk, Kyle; Ahn, Hyun S; Titus, Eric J; Kim, Jiyeon; Willets, Katherine A; Bard, Allen J

    2015-06-02

    We report a method to study electro-active defects in passivated electrodes. This method couples fluorescence microscopy and electrochemistry to localize and size electro-active defects. The method was validated by comparison with a scanning probe technique, scanning electrochemical microscopy. We used our method for studying electro-active defects in thin TiO2 layers electrodeposited on 25 μm diameter Pt ultramicroelectrodes (UMEs). The permeability of the TiO2 layer was estimated by measuring the oxidation of ferrocenemethanol at the UME. Blocking of current ranging from 91.4 to 99.8% was achieved. Electro-active defects with an average radius ranging between 9 and 90 nm were observed in these TiO2 blocking layers. The distribution of electro-active defects over the TiO2 layer is highly inhomogeneous and the number of electro-active defect increases for lower degree of current blocking. The interest of the proposed technique is the possibility to quickly (less than 15 min) image samples as large as several hundreds of μm(2) while being able to detect electro-active defects of only a few tens of nm in radius.

  7. Breakdown, fractoemission, diffusion: role of defects in dielectrics

    International Nuclear Information System (INIS)

    Vigouroux, J.P.; Serruys, Y.

    1987-01-01

    During the surface analysis of dielectric materials, the impinging ionising particles induce point defects localised in the band gap and build an electrical charge. The electric field created by the charged defects modifies the physico-chemical properties of surface and bulk. We show that the fundamental study of defects allows a better understanding of technological phenomena such as dielectric breakdown, fracture and diffusion [fr

  8. Microstructural and electrical changes in nickel manganite powder induced by mechanical activation

    International Nuclear Information System (INIS)

    Savic, S.M.; Mancic, L.; Vojisavljevic, K.; Stojanovic, G.; Brankovic, Z.; Aleksic, O.S.; Brankovic, G.

    2011-01-01

    Highlights: → The influence of mechanical activation on microstructure evolution in the nickel manganite powder was investigated as well as electrical properties of the sintered samples. → Structural refinement obtained by Topas-Academic software based on Rietveld analysis showed that the milling process remarkably changed the powder morphology and microstructure. → SEM studies of sintered samples also revealed the strong influence of milling time on ceramics density (increases with milling time). → The electrical properties of ceramic samples are clearly conditioned by terms of synthesis, in our case the time of mechanical activation. → The highest density and higher values of dielectric constant were achieved at the sample activated for 45 min. -- Abstract: Nickel manganite powder synthesized by calcination of a stoichiometric mixture of manganese and nickel oxide was additionally mechanically activated in a high energy planetary ball mill for 5-60 min in order to obtain a pure NiMn 2 O 4 phase. The as-prepared powders were uniaxially pressed into disc shape pellets and then sintered for 60 min at 1200 o C. Changes in the particle morphology induced by mechanical activation were monitored using scanning electron microscopy, while changes in powder structural characteristics were followed using X-ray powder diffraction. The ac impedance spectroscopy was performed on sintered nickel manganite samples at 25 o C, 50 o C and 80 o C. It was shown that mechanical activation intensifies transport processes causing a decrease in the average crystallites size, while longer activation times can lead to the formation of aggregates, defects and increase of lattice microstrains. The observed changes in microstructures were correlated with measured electrical properties in order to define optimal processing conditions.

  9. Predesigned surface patterns and topological defects control the active matter.

    Science.gov (United States)

    Turiv, Taras; Peng, Chenhui; Guo, Yubing; Wei, Qi-Huo; Lavrentovich, Oleg

    Active matter exhibits remarkable patterns of never-ending dynamics with giant fluctuations of concentration, varying order, nucleating and annihilating topological defects. These patterns can be seen in active systems of both biological and artificial origin. A fundamental question is whether and how one can control this chaotic out-of-equilibrium behavior. We demonstrate a robust control of local concentration, trajectories of active self-propelled units and the net flows of active bacteria Bacillus Substilis by imposing pre-designed surface patterns of orientational order in a water-based lyotropic chromonic liquid crystal. The patterns force the bacteria to gather into dynamic swarms with spatially modulated concentration and well-defined polarity of motion. Topological defects produce net motion of bacteria with a unidirectional circulation, while pairs of defects induce a pumping action. The qualitative features of the dynamics can be explained by interplay of curvature and activity, in particular, by ability of mixed splay-bend curvatures to generate threshold-less active flows. The demonstrated level of control opens opportunities in engineering materials and devices that mimic rich functionality of living systems. This work was supported by NSF Grants DMR-1507637, DMS-1434185, CMMI-1436565, by the Petroleum Research Grant PRF# 56046-ND7 administered by the American Chemical Society.

  10. Impurity diffusion, point defect engineering, and surface/interface passivation in germanium

    KAUST Repository

    Chroneos, Alexander I.; Schwingenschlö gl, Udo; Dimoulas, Athanasios Dimoulas

    2012-01-01

    in view of recent results. The importance of electrically active defects on the Ge surface and interfaces is addressed considering strategies to suppress them and to passivate the surfaces/interfaces, bearing in mind their importance for advanced devices

  11. The influence of defect drift in external electric field on green luminescence of ZnO single crystals

    International Nuclear Information System (INIS)

    Korsunska, N.O.; Borkovska, L.V.; Bulakh, B.M.; Khomenkova, L.Yu.; Kushnirenko, V.I.; Markevich, I.V.

    2003-01-01

    In nominally undoped Zn O single crystals, the influence of electric field on photoluminescence in visible wavelength range was investigated. A well-known broad unstructured band consisting of green and orange ones was observed. It was found that the action of direct electric field of about 100 V/cm at 600-700 deg. C resulted in the increase of green band intensity near the cathode and its decrease near the anode, while orange band intensity was not influenced by this treatment. The redistribution of green band intensity along the sample under electric field is accounted for by drift of zinc interstitials from the anode to the cathode. It is supposed that emitting centres responsible for green luminescence are complex defects including zinc interstitials

  12. Electrical activation of solid-phase epitaxially regrown ultra-low energy boron implants in Ge preamorphised silicon and SOI

    International Nuclear Information System (INIS)

    Hamilton, J.J.; Collart, E.J.H.; Colombeau, B.; Jeynes, C.; Bersani, M.; Giubertoni, D.; Sharp, J.A.; Cowern, N.E.B.; Kirkby, K.J.

    2005-01-01

    The formation of highly activated ultra-shallow junctions (USJ) is one of the key requirements for the next generation of CMOS devices. One promising method for achieving this is the use of Ge preamorphising implants (PAI) prior to ultra-low energy B implantation. In future technology nodes, bulk silicon wafers may be supplanted by Silicon-on-Insulator (SOI), and an understanding of the Solid Phase Epitaxial (SPE) regrowth process and its correlation to dopant electrical activation in both bulk silicon and SOI is essential in order to understand the impact of this potential technology change. This kind of understanding will also enable tests of fundamental models for defect evolution and point-defect reactions at silicon/oxide interfaces. In the present work, B is implanted into Ge PAI silicon and SOI wafers with different PAI conditions and B doses, and resulting samples are annealed at various temperatures and times. Glancing-exit Rutherford Backscattering Spectrometry (RBS) is used to monitor the regrowth of the amorphous silicon, and the resulting redistribution and electrical activity of B are monitored by SIMS and Hall measurements. The results confirm the expected enhancement of regrowth velocity by B doping, and show that this velocity is otherwise independent of the substrate type and the Ge implant distribution within the amorphised layer. Hall measurements on isochronally annealed samples show that B deactivates less in SOI material than in bulk silicon, in cases where the Ge PAI end-of-range defects are close to the SOI back interface

  13. Lattice defect investigation of nanostructured ECAP-Cu by means of x-ray line profile analysis, calorimetry and electrical resistometry

    International Nuclear Information System (INIS)

    Schafler, E.; Steiner, G.; KEXrber, M.; Zehetbauer, M.J.; Korznikova, E.

    2005-01-01

    Full text: Cu rods have been deformed by Equal Channel Angular Pressing (ECAP) up to shear strains γ ∼ 5 while applying various deformation paths A, B c and C. ECAP processed materials show a microstructure with grain sizes in the nanometer range and a high density of lattice defects. X-ray Bragg Profile Analyses (XPA), Differential Scanning Calorimetry (DSC) as well as Residual Electrical Resistivity (RER) measurements have been performed, in order to detect the densities of various deformation induced lattice defects and/or their arrangements. The results have been analyzed in terms of annealing of deformation induced dislocations and vacancies (vacancy agglomerates). Compared to conventional cold work procedures, deformation by ECAP achieves a strongly enhanced concentration of vacancy type defects. (author)

  14. Evolution of Electrically Active Defects in n-GaN During Heat Treatment Typical for Ohmic Contact Formation

    DEFF Research Database (Denmark)

    Boturchuk, Ievgen; Scheffler, Leopold Julian; Larsen, Arne Nylandsted

    2018-01-01

    Ohmic contact formation to n-type GaN often involves high temperature steps, for example sintering at about 800 °C in the case of Ti-based contacts. Such processing steps might cause changes in the distribution, concentration, and properties of the defects. The present work aims at contributing...... to the knowledge about defect evolution in GaN upon processing at different temperatures. The processing temperatures are selected according to fabrication procedures for commonly used ohmic contacts to n-GaN: 300 °C (In-based), 550 °C (Ta-based), and 800 °C (Ti-based). Properties and concentration of the defects...

  15. Influences of point defects on electrical and optical properties of InGaN light-emitting diodes at cryogenic temperature

    Science.gov (United States)

    Tu, Yi; Ruan, Yujiao; Zhu, Lihong; Tu, Qingzhen; Wang, Hongwei; Chen, Jie; Lu, Yijun; Gao, Yulin; Shih, Tien-Mo; Chen, Zhong; Lin, Yue

    2018-04-01

    We investigate the cryogenic external quantum efficiency (EQE) for some InGaN light-emitting diodes with different indium contents. We observe a monotonic decrease in EQE with the increasing forward current before the "U-turn" point, beyond which the thermal effect increases the EQE. We discover positive dependences among the droop rate (χ), differential electrical resistance (Rd), and indium content. Also, χ and Rd of individual green samples shift correspondingly during the aging test, when the Mg ions are activated at high injection density and diffuse into the active region. Considering the fact that both In and Mg ions would introduce point defects (PDs), we proposed a model that reveals the mechanism of interplay between PDs and carriers. PDs serve as both energy traps and non-radiative recombination centers. They attract and confine carriers, leading to an increase in Rd and a decrease in EQE.

  16. Polydispersity-driven topological defects as order-restoring excitations.

    Science.gov (United States)

    Yao, Zhenwei; Olvera de la Cruz, Monica

    2014-04-08

    The engineering of defects in crystalline matter has been extensively exploited to modify the mechanical and electrical properties of many materials. Recent experiments on manipulating extended defects in graphene, for example, show that defects direct the flow of electric charges. The fascinating possibilities offered by defects in two dimensions, known as topological defects, to control material properties provide great motivation to perform fundamental investigations to uncover their role in various systems. Previous studies mostly focus on topological defects in 2D crystals on curved surfaces. On flat geometries, topological defects can be introduced via density inhomogeneities. We investigate here topological defects due to size polydispersity on flat surfaces. Size polydispersity is usually an inevitable feature of a large variety of systems. In this work, simulations show well-organized induced topological defects around an impurity particle of a wrong size. These patterns are not found in systems of identical particles. Our work demonstrates that in polydispersed systems topological defects play the role of restoring order. The simulations show a perfect hexagonal lattice beyond a small defective region around the impurity particle. Elasticity theory has demonstrated an analogy between the elementary topological defects named disclinations to electric charges by associating a charge to a disclination, whose sign depends on the number of its nearest neighbors. Size polydispersity is shown numerically here to be an essential ingredient to understand short-range attractions between like-charge disclinations. Our study suggests that size polydispersity has a promising potential to engineer defects in various systems including nanoparticles and colloidal crystals.

  17. Carbon-hydrogen defects with a neighboring oxygen atom in n-type Si

    Science.gov (United States)

    Gwozdz, K.; Stübner, R.; Kolkovsky, Vl.; Weber, J.

    2017-07-01

    We report on the electrical activation of neutral carbon-oxygen complexes in Si by wet-chemical etching at room temperature. Two deep levels, E65 and E75, are observed by deep level transient spectroscopy in n-type Czochralski Si. The activation enthalpies of E65 and E75 are obtained as EC-0.11 eV (E65) and EC-0.13 eV (E75). The electric field dependence of their emission rates relates both levels to single acceptor states. From the analysis of the depth profiles, we conclude that the levels belong to two different defects, which contain only one hydrogen atom. A configuration is proposed, where the CH1BC defect, with hydrogen in the bond-centered position between neighboring C and Si atoms, is disturbed by interstitial oxygen in the second nearest neighbor position to substitutional carbon. The significant reduction of the CH1BC concentration in samples with high oxygen concentrations limits the use of this defect for the determination of low concentrations of substitutional carbon in Si samples.

  18. Metastable defect response in CZTSSe from admittance spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Koeper, Mark J.; Hages, Charles J.; Li, Jian V.; Levi, Dean; Agrawal, Rakesh

    2017-10-02

    Admittance spectroscopy is a useful tool used to study defects in semiconductor materials. However, metastable defect responses in non-ideal semiconductors can greatly impact the measurement and therefore the interpretation of results. Here, admittance spectroscopy was performed on Cu2ZnSn(S,Se)4 where metastable defect response is illustrated due to the trapping of injected carriers into a deep defect state. To investigate the metastable response, admittance measurements were performed under electrically and optically relaxed conditions in comparison to a device following a low level carrier-injection pretreatment. The relaxed measurement demonstrates a single capacitance signature while two capacitance signatures are observed for the device measured following carrier-injection. The deeper level signature, typically reported for kesterites, is activated by charge trapping following carrier injection. Both signatures are attributed to bulk level defects. The significant metastable response observed on kesterites due to charge trapping obscures accurate interpretation of defect levels from admittance spectroscopy and indicates that great care must be taken when performing and interpreting this measurement on non-ideal devices.

  19. Exploring atomic defects in molybdenum disulphide monolayers

    KAUST Repository

    Hong, Jinhua; Hu, Zhixin; Probert, Matt; Li, Kun; Lv, Danhui; Yang, Xinan; Gu, Lin; Mao, Nannan; Feng, Qingliang; Xie, Liming; Zhang, Jin; Wu, Dianzhong; Zhang, Zhiyong; Jin, Chuanhong; Ji, Wei; Zhang, Xixiang; Yuan, Jun; Zhang, Ze

    2015-01-01

    Defects usually play an important role in tailoring various properties of two-dimensional materials. Defects in two-dimensional monolayer molybdenum disulphide may be responsible for large variation of electric and optical properties. Here we present a comprehensive joint experiment-theory investigation of point defects in monolayer molybdenum disulphide prepared by mechanical exfoliation, physical and chemical vapour deposition. Defect species are systematically identified and their concentrations determined by aberration-corrected scanning transmission electron microscopy, and also studied by ab-initio calculation. Defect density up to 3.5 × 10 13 cm '2 is found and the dominant category of defects changes from sulphur vacancy in mechanical exfoliation and chemical vapour deposition samples to molybdenum antisite in physical vapour deposition samples. Influence of defects on electronic structure and charge-carrier mobility are predicted by calculation and observed by electric transport measurement. In light of these results, the growth of ultra-high-quality monolayer molybdenum disulphide appears a primary task for the community pursuing high-performance electronic devices.

  20. Exploring atomic defects in molybdenum disulphide monolayers

    KAUST Repository

    Hong, Jinhua

    2015-02-19

    Defects usually play an important role in tailoring various properties of two-dimensional materials. Defects in two-dimensional monolayer molybdenum disulphide may be responsible for large variation of electric and optical properties. Here we present a comprehensive joint experiment-theory investigation of point defects in monolayer molybdenum disulphide prepared by mechanical exfoliation, physical and chemical vapour deposition. Defect species are systematically identified and their concentrations determined by aberration-corrected scanning transmission electron microscopy, and also studied by ab-initio calculation. Defect density up to 3.5 × 10 13 cm \\'2 is found and the dominant category of defects changes from sulphur vacancy in mechanical exfoliation and chemical vapour deposition samples to molybdenum antisite in physical vapour deposition samples. Influence of defects on electronic structure and charge-carrier mobility are predicted by calculation and observed by electric transport measurement. In light of these results, the growth of ultra-high-quality monolayer molybdenum disulphide appears a primary task for the community pursuing high-performance electronic devices.

  1. Compositional and electrical properties of line and planar defects in Cu(In,Ga)Se2 thin films for solar cells - a review

    International Nuclear Information System (INIS)

    Abou-Ras, Daniel; Schmidt, Sebastian S.; Schaefer, Norbert; Kavalakkatt, Jaison; Rissom, Thorsten; Unold, Thomas; Mainz, Roland; Weber, Alfons; Kirchartz, Thomas; Simsek Sanli, Ekin; Aken, Peter A. van; Ramasse, Quentin M.; Kleebe, Hans-Joachim; Azulay, Doron; Balberg, Isaac; Millo, Oded; Cojocaru-Miredin, Oana; Barragan-Yani, Daniel; Albe, Karsten; Haarstrich, Jakob; Ronning, Carsten

    2016-01-01

    The present review gives an overview of the various reports on properties of line and planar defects in Cu(In,Ga)(S,Se) 2 thin films for high-efficiency solar cells. We report results from various analysis techniques applied to characterize these defects at different length scales, which allow for drawing a consistent picture on structural and electronic defect properties. A key finding is atomic reconstruction detected at line and planar defects, which may be one mechanism to reduce excess charge densities and to relax deep-defect states from midgap to shallow energy levels. On the other hand, nonradiative Shockley-Read-Hall recombination is still enhanced with respect to defect-free grain interiors, which is correlated with substantial reduction of luminescence intensities. Comparison of the microscopic electrical properties of planar defects in Cu(In,Ga)(S,Se) 2 thin films with two-dimensional device simulations suggest that these defects are one origin of the reduced open-circuit voltage of the photovoltaic devices. (copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  2. B implanted at room temperature in crystalline Si: B defect formation and dissolution

    International Nuclear Information System (INIS)

    Romano, L.; Piro, A.M.; Mirabella, S.; Grimaldi, M.G.

    2005-01-01

    The B lattice location of B implanted into crystalline Si at room temperature has been investigated using the nuclear reaction 11 B(p,α) 8 Be induced by 650 keV proton beam and channelling analyses. The angular scans along the and axes indicate the formation of a particular B complex with B atoms non-randomly located. The same defect has been observed also for B doped Si where the B atoms, initially substitutional and electrically active, have been displaced as consequence of the interaction with the point defects generated by proton irradiation. The angular scans were compatible with the B-B pairs aligned along the axis predicted by theoretical calculations. The thermal evolution in the 400-950 deg. C range of the B complexes has been inferred both by B lattice location measurements and electrical activation. At low temperature (<700 deg. C) only 10% of the total B dose is active and a significant increase of randomly located B occurs. A significant electrical activation consistent with the concentration of substitutional B occurs at temperature higher than 800 deg. C. The data are interpreted in terms of a formation and dissolution of the B complexes

  3. Microstructural and electrical changes in nickel manganite powder induced by mechanical activation

    Energy Technology Data Exchange (ETDEWEB)

    Savic, S.M., E-mail: slavicas@cms.bg.ac.rs [Institute for Multidisciplinary Research-University of Belgrade, Kneza Viseslava 1a, 11030 Belgrade (Serbia); Mancic, L. [Institute of Technical Sciences SASA, Knez Mihailova 35/IV, 11000 Belgrade (Serbia); Vojisavljevic, K. [Institute for Multidisciplinary Research-University of Belgrade, Kneza Viseslava 1a, 11030 Belgrade (Serbia); Stojanovic, G. [Faculty of Technical Sciences University of Novi Sad, Trg Dositeja Obradovica 6, 21000 Novi Sad (Serbia); Brankovic, Z.; Aleksic, O.S.; Brankovic, G. [Institute for Multidisciplinary Research-University of Belgrade, Kneza Viseslava 1a, 11030 Belgrade (Serbia)

    2011-07-15

    Highlights: {yields} The influence of mechanical activation on microstructure evolution in the nickel manganite powder was investigated as well as electrical properties of the sintered samples. {yields} Structural refinement obtained by Topas-Academic software based on Rietveld analysis showed that the milling process remarkably changed the powder morphology and microstructure. {yields} SEM studies of sintered samples also revealed the strong influence of milling time on ceramics density (increases with milling time). {yields} The electrical properties of ceramic samples are clearly conditioned by terms of synthesis, in our case the time of mechanical activation. {yields} The highest density and higher values of dielectric constant were achieved at the sample activated for 45 min. -- Abstract: Nickel manganite powder synthesized by calcination of a stoichiometric mixture of manganese and nickel oxide was additionally mechanically activated in a high energy planetary ball mill for 5-60 min in order to obtain a pure NiMn{sub 2}O{sub 4} phase. The as-prepared powders were uniaxially pressed into disc shape pellets and then sintered for 60 min at 1200 {sup o}C. Changes in the particle morphology induced by mechanical activation were monitored using scanning electron microscopy, while changes in powder structural characteristics were followed using X-ray powder diffraction. The ac impedance spectroscopy was performed on sintered nickel manganite samples at 25 {sup o}C, 50 {sup o}C and 80 {sup o}C. It was shown that mechanical activation intensifies transport processes causing a decrease in the average crystallites size, while longer activation times can lead to the formation of aggregates, defects and increase of lattice microstrains. The observed changes in microstructures were correlated with measured electrical properties in order to define optimal processing conditions.

  4. Dependence of the electrical properties of defective single-walled carbon nanotubes on the vacancy density

    International Nuclear Information System (INIS)

    Luo Yu-Pin; Tien Li-Gan; Tsai Chuen-Horng; Lee Ming-Hsien; Li Feng-Yin

    2011-01-01

    The relationship between the electric properties and the vacancy density in single-walled carbon nanotubes has been investigated from first principles as well as the dependence of the influencing range of a vacancy in the nanotube on the nanotube chirality. Compared with the long-range interaction of the vacancies in a single-walled carbon nanotube with non-zero chiral angle, a much shorter interaction was found between vacancies in a zigzag single-walled carbon nanotube. In this study, we investigated the bandstructure fluctuations caused by the nanotube strain, which depends on both the vacancy density and the tube chirality. These theoretical results provide new insight to understand the relationship between the local deformation of a defective single-walled carbon nanotube and its measurable electronic properties. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  5. Compositional and electrical properties of line and planar defects in Cu(In,Ga)Se{sub 2} thin films for solar cells - a review

    Energy Technology Data Exchange (ETDEWEB)

    Abou-Ras, Daniel; Schmidt, Sebastian S.; Schaefer, Norbert; Kavalakkatt, Jaison; Rissom, Thorsten; Unold, Thomas; Mainz, Roland; Weber, Alfons [Helmholtz-Zentrum Berlin fuer Materialien und Energie GmbH, Hahn-Meitner-Platz 1, 14109, Berlin (Germany); Kirchartz, Thomas [Forschungszentrum Juelich, Institut fuer Energie- und Klimaforschung (IEK-5), Photovoltaik, 52428, Juelich (Germany); Simsek Sanli, Ekin; Aken, Peter A. van [Max Planck Institute for Solid State Research, Heisenbergstrasse 1, 70569, Stuttgart (Germany); Ramasse, Quentin M. [SuperSTEM Laboratory, SciTech Daresbury Campus, Keckwick Lane, Daresbury, WA4 4AD (United Kingdom); Kleebe, Hans-Joachim [Technische Universitaet Darmstadt, Institut fuer Angewandte Geowissenschaften, Schnittspahnstrasse 9, 64287, Darmstadt (Germany); Azulay, Doron; Balberg, Isaac; Millo, Oded [Racah Institute of Physics, The Hebrew University of Jerusalem, Jerusalem, 91904 (Israel); Cojocaru-Miredin, Oana [RWTH Aachen, Physikalisches Institut IA, Sommerfeldstr. 14, 52074, Aachen (Germany); Barragan-Yani, Daniel; Albe, Karsten [Technische Universitaet Darmstadt, FG Materialmodellierung, Jovanka-Bontschits-Str. 2, 64287, Darmstadt (Germany); Haarstrich, Jakob; Ronning, Carsten [Institut fuer Festkoerperphysik, Friedrich Schiller Universitaet Jena, Max-Wien-Platz 1, 07743, Jena (Germany)

    2016-05-15

    The present review gives an overview of the various reports on properties of line and planar defects in Cu(In,Ga)(S,Se){sub 2} thin films for high-efficiency solar cells. We report results from various analysis techniques applied to characterize these defects at different length scales, which allow for drawing a consistent picture on structural and electronic defect properties. A key finding is atomic reconstruction detected at line and planar defects, which may be one mechanism to reduce excess charge densities and to relax deep-defect states from midgap to shallow energy levels. On the other hand, nonradiative Shockley-Read-Hall recombination is still enhanced with respect to defect-free grain interiors, which is correlated with substantial reduction of luminescence intensities. Comparison of the microscopic electrical properties of planar defects in Cu(In,Ga)(S,Se){sub 2} thin films with two-dimensional device simulations suggest that these defects are one origin of the reduced open-circuit voltage of the photovoltaic devices. (copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  6. Defect-Induced Luminescence of a Self-Activated Borophosphate Phosphor

    Science.gov (United States)

    Han, Bing; Liu, Beibei; Dai, Yazhou; Zhang, Jie

    2018-05-01

    A self-activated borophosphate phosphor Ba3BPO7 was prepared via typical solid-state reaction in thermal-carbon reduction atmosphere. The structural and luminescence properties were investigated using x-ray powder diffraction (XRD), Fourier transform infrared (FT-IR) spectroscopy, and photoluminescence spectroscopy. Upon excitation with ultraviolet (UV) light, the as-prepared phosphor shows bright greenish-yellow emission with a microsecond-level fluorescence lifetime, which could result from the oxygen vacancies produced in the process of solid-state synthesis. The possible luminescence mechanism is proposed. Through the introduction of defects in the host, this work realizes visible luminescence in a pure borophosphate compound that does not contain any rare earth or transition metal activators, so it is helpful to develop defect-related luminescent materials in view of energy conservation and environmental protection for sustainable development.

  7. Defect evolution and dopant activation in laser annealed Si and Ge

    DEFF Research Database (Denmark)

    Cristiano, F.; Shayesteh, M.; Duffy, R.

    2016-01-01

    Defect evolution and dopant activation are intimately related to the use of ion implantation and annealing, traditionally used to dope semiconductors during device fabrication. Ultra-fast laser thermal annealing (LTA) is one of the most promising solutions for the achievement of abrupt and highly...... doped junctions. In this paper, we report some recent investigations focused on this annealing method, with particular emphasis on the investigation of the formation and evolution of implant/anneal induced defects and their impact on dopant activation. In the case of laser annealed Silicon, we show...

  8. The Origin of Improved Electrical Double-Layer Capacitance by Inclusion of Topological Defects and Dopants in Graphene for Supercapacitors.

    Science.gov (United States)

    Chen, Jiafeng; Han, Yulei; Kong, Xianghua; Deng, Xinzhou; Park, Hyo Ju; Guo, Yali; Jin, Song; Qi, Zhikai; Lee, Zonghoon; Qiao, Zhenhua; Ruoff, Rodney S; Ji, Hengxing

    2016-10-24

    Low-energy density has long been the major limitation to the application of supercapacitors. Introducing topological defects and dopants in carbon-based electrodes in a supercapacitor improves the performance by maximizing the gravimetric capacitance per mass of the electrode. However, the main mechanisms governing this capacitance improvement are still unclear. We fabricated planar electrodes from CVD-derived single-layer graphene with deliberately introduced topological defects and nitrogen dopants in controlled concentrations and of known configurations, to estimate the influence of these defects on the electrical double-layer (EDL) capacitance. Our experimental study and theoretical calculations show that the increase in EDL capacitance due to either the topological defects or the nitrogen dopants has the same origin, yet these two factors improve the EDL capacitance in different ways. Our work provides a better understanding of the correlation between the atomic-scale structure and the EDL capacitance and presents a new strategy for the development of experimental and theoretical models for understanding the EDL capacitance of carbon electrodes. © 2016 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

  9. Electronic transport of bilayer graphene with asymmetry line defects

    Science.gov (United States)

    Zhao, Xiao-Ming; Wu, Ya-Jie; Chen, Chan; Liang, Ying; Kou, Su-Peng

    2016-11-01

    In this paper, we study the quantum properties of a bilayer graphene with (asymmetry) line defects. The localized states are found around the line defects. Thus, the line defects on one certain layer of the bilayer graphene can lead to an electric transport channel. By adding a bias potential along the direction of the line defects, we calculate the electric conductivity of bilayer graphene with line defects using the Landauer-Büttiker theory, and show that the channel affects the electric conductivity remarkably by comparing the results with those in a perfect bilayer graphene. This one-dimensional line electric channel has the potential to be applied in nanotechnology engineering. Project supported by the National Basic Research Program of China (Grant Nos. 2011CB921803 and 2012CB921704), the National Natural Science Foundation of China (Grant Nos. 11174035, 11474025, 11504285, and 11404090), the Specialized Research Fund for the Doctoral Program of Higher Education, China, the Fundamental Research Funds for the Central Universities, China, the Scientific Research Program Fund of the Shaanxi Provincial Education Department, China (Grant No. 15JK1363), and the Young Talent Fund of University Association for Science and Technology in Shaanxi Province, China.

  10. Study on acoustic emission signals of active defect in pressure piping under hydraulic pressure

    International Nuclear Information System (INIS)

    Ai Qiong; Liu Caixue; Wang Yao; He Pan; Song Jian

    2009-01-01

    Experimental investigations of acoustic emission (AE) of active defect in pressure piping with a prefabricated crack under hydraulic pressure tester were conducted. AE signals of fatigue-crack-growth in pressure piping were monitored incessantly in all processes, and all signals recorded were analyzed and processed. The result of signal processing show that the amplitude and energy of acoustic emission signals from defect in pressure pipeline increase gradually with the load time, and thus the active defects in pipeline can be identified; the amplitude, energy and count of acoustic emission signals increase sharply before the defect runs through, and we can forecast the penetrated leakage of pipeline. (authors)

  11. Analysed a defective of the machine for a cap-tube nuclear fuel element ME-27 from its electricity point of view

    International Nuclear Information System (INIS)

    Achmad Suntoro

    2009-01-01

    It has been analysed a defective of the machine for a cap-tube nuclear fuel element ME-27 from its electricity point of view. The machine uses magnetic force resistance welding technique. A short circuit was happened within the machine because the nut for tightening high voltage cable for welding transformer was broken so that the cable touched the machine body and produced the short circuit. This condition made both the primary circuit breaker in the building down and produced high voltage pulse induction to the electronic circuit within the machine so that one of its electronic components was defective. This case becomes warnings on how important of tightening a nut according to its strength specification (using wrench torque) and the necessity of voltage transient limitation circuit to be installed. Both of the warnings are necessary for any equipment consuming high electric current oriented such as the ME-27 machine. (author)

  12. Effect of defects on electrical properties of 4H-SiC Schottky diodes

    International Nuclear Information System (INIS)

    Ben Karoui, M.; Gharbi, R.; Alzaied, N.; Fathallah, M.; Tresso, E.; Scaltrito, L.; Ferrero, S.

    2008-01-01

    Most of power electronic circuits use power semiconductor switching devices which ideally present infinite resistance when off, zero resistance when on, and switch instantaneously between those two states. Switches and rectifiers are key components in power electronic systems, which cover a wide range of applications, from power transmission to control electronics and power supplies. Typical power switching devices such as diodes, thyristors, and transistors are based on a monocrystalline silicon semiconductor or silicon carbide. Silicon is less expensive, more widely used, and a more versatile processing material than silicon carbide. The silicon carbide (SiC) has properties that allow devices with high power voltage rating and high operating temperatures. The technology overcomes some crystal growth obstacles, by using the hydrogen in the fabrication of 4H-SiC wafers. The presence of structural defects on 4H-SiC wafers was shown by different techniques such as optical microscopy and scanning electron microscopy. The presence of different SiC polytypes inclusions was found by Raman spectroscopy. Schottky diodes were realized on investigated wafers in order to obtain information about the correlation between those defects and electrical properties of the devices. The diodes with voltage breakdown as 600 V and ideality factor as 1.05 were obtained and characterized after packaging

  13. Electrical characterization of copper related defect reactions in silicon

    Energy Technology Data Exchange (ETDEWEB)

    Heiser, T. [Centre National de la Recherche Scientifique, 67 - Strasbourg (France). Lab. PHASE; Istratov, A.A.; Flink, C.; Weber, E.R. [Department of Material Science and Mineral Engineering, University of California at Berkeley, 577 Evans Hall, Berkeley, CA 94720 (United States)

    1999-02-12

    Defect reactions involving interstitial copper impurities (Cu{sub i}) in silicon are reviewed. The influence of the Coulomb interaction between positively charged copper and negatively charged defects, such as acceptor states of transition metals and lattice defects, on the complex formation rate is discussed in detail. The diffusivity of interstitial copper and the dissociation kinetics of copper-acceptor pairs are studied using the recently introduced transient ion drift (TID) method. TID results reveal that most interstitial copper impurities remain dissolved immediately after the quench and form pairs with shallow acceptors. It is shown that in moderately and heavily doped silicon the diffusivity of copper is trap limited, while in low B-doped silicon the interstitial copper-acceptor pairing is weak enough to allow the assessment of the copper intrinsic diffusion coefficient. The intrinsic diffusion barrier is estimated to be 0.18{+-}0.01 eV. It is concluded that the Coulomb potential used in previous publications underestimated considerably the acceptor-copper interaction. In light of these results, a general discussion on Cu related defect reactions is given. (orig.) 44 refs.

  14. Barrier controlled carrier trapping of extended defects in CdZnTe detector

    International Nuclear Information System (INIS)

    Guo, Rongrong; Jie, Wanqi; Xu, Yadong; Yu, Hui; Zha, Gangqiang; Wang, Tao; Ren, Jie

    2015-01-01

    Transient current techniques using alpha particle source were utilized to study the influence of extended defects on the electron drift time and the detector performance of CdZnTe crystals. Different from the case of trapping through isolated point defect, a barrier controlled trapping model was used to explain the mechanism of carrier trapping at the extended defects. The effect of extended defects on the photoconductance was studied by laser beam induced transient current (LBIC) measurement. The results demonstrate that the Schottky-type depletion space charge region is induced at the vicinity of the extended defects, which further distorts the internal electric field distribution and affects the carrier trajectory in CdZnTe crystals. The relationship between the electron drift time and detector performance has been established. - Highlights: • The barrier controlled trapping model was developed around extended defects. • Electron mobility and E-field distribution were distorted by space charge depletion region. • Extended defects act as a recombination-activated region. • The relationships between extended defects and detector performance were established

  15. Enhanced Carbon Dioxide Electroreduction to Carbon Monoxide over Defect-Rich Plasma-Activated Silver Catalysts.

    Science.gov (United States)

    Mistry, Hemma; Choi, Yong-Wook; Bagger, Alexander; Scholten, Fabian; Bonifacio, Cecile S; Sinev, Ilya; Divins, Nuria J; Zegkinoglou, Ioannis; Jeon, Hyo Sang; Kisslinger, Kim; Stach, Eric A; Yang, Judith C; Rossmeisl, Jan; Roldan Cuenya, Beatriz

    2017-09-11

    Efficient, stable catalysts with high selectivity for a single product are essential if electroreduction of CO 2 is to become a viable route to the synthesis of industrial feedstocks and fuels. A plasma oxidation pre-treatment of silver foil enhances the number of low-coordinated catalytically active sites, which dramatically lowers the overpotential and increases the activity of CO 2 electroreduction to CO. At -0.6 V versus RHE more than 90 % Faradaic efficiency towards CO was achieved on a pre-oxidized silver foil. While transmission electron microscopy (TEM) and operando X-ray absorption spectroscopy showed that oxygen species can survive in the bulk of the catalyst during the reaction, quasi in situ X-ray photoelectron spectroscopy showed that the surface is metallic under reaction conditions. DFT calculations reveal that the defect-rich surface of the plasma-oxidized silver foils in the presence of local electric fields drastically decrease the overpotential of CO 2 electroreduction. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

  16. Research in Hydrogen Passivation of Defects and Impurities in Silicon: Final Report, 2 May 2000-2 July 2003

    International Nuclear Information System (INIS)

    Ashok, S.

    2004-01-01

    This subcontract report describes hydrogenating Si samples by different methods such as low-energy implantation, electron cyclotron resonance (ECR) plasma, and thermal diffusion. The samples were provided through NREL. The experimental work, carried out at Penn State, involved the study of hydrogen interaction with defects, trapping, migration, and formation of complexes. The principal vehicle for the latter study was ion implantation, and the intent to understand mechanisms of defect passivation and activation by hydrogen. NREL implemented a study of hydrogen passivation of impurities and defects in silicon solar cells. The work included theoretical and experimental components performed at different universities. The theoretical studies consisted of the calculation of the structure and parameters related to hydrogen diffusion and interactions of hydrogen with transition-metal impurities in silicon. Experimental studies involved measurements of hydrogen and hydrogen-impurity complexes, and diffusion properties of various species of hydrogen in Si. The experimental work at Penn State included introduction of hydrogen in a variety of PV Si by ECR plasma, low-energy ion implantation, and thermal diffusion. The specific tasks were the evaluation of hydrogen interaction with defects engineered by ion implantation; defect passivation, activation, and migration in hydrogenated Si under thermal anneal; and electrical activity of hydrogen-impurity complexes. Electrical characterization entailed I-V and C-V measurements, spreading resistance, and deep-level transient spectroscopy (DLTS)

  17. Density Functional Theory Calculations of Activation Energies for Carrier Capture by Defects in Semiconductors

    Science.gov (United States)

    Modine, N. A.; Wright, A. F.; Lee, S. R.

    The rate of defect-induced carrier recombination is determined by both defect levels and carrier capture cross-sections. Density functional theory (DFT) has been widely and successfully used to predict defect levels, but only recently has work begun to focus on using DFT to determine carrier capture cross-sections. Lang and Henry developed the theory of carrier-capture by multiphonon emission in the 1970s and showed that carrier-capture cross-sections differ between defects primarily due to differences in their carrier capture activation energies. We present an approach to using DFT to calculate carrier capture activation energies that does not depend on an assumed configuration coordinate and that fully accounts for anharmonic effects, which can substantially modify carrier activation energies. We demonstrate our approach for intrinisic defects in GaAs and GaN and discuss how our results depend on the choice of exchange-correlation functional and the treatment of spin polarization. Sandia National Laboratories is a multi-program laboratory managed and operated by Sandia Corporation, a wholly owned subsidiary of Lockheed Martin Corporation, for the U.S. Department of Energy's National Nuclear Security Administration under Contract DE-AC04-94AL85000.

  18. Mechanisms by Which Interleukin-12 Corrects Defective NK Cell Anticryptococcal Activity in HIV-Infected Patients

    Directory of Open Access Journals (Sweden)

    Stephen K. Kyei

    2016-08-01

    Full Text Available Cryptococcus neoformans is a pathogenic yeast and a leading cause of life-threatening meningitis in AIDS patients. Natural killer (NK cells are important immune effector cells that directly recognize and kill C. neoformans via a perforin-dependent cytotoxic mechanism. We previously showed that NK cells from HIV-infected patients have aberrant anticryptococcal killing and that interleukin-12 (IL-12 restores the activity at least partially through restoration of NKp30. However, the mechanisms causing this defect or how IL-12 restores the function was unknown. By examining the sequential steps in NK cell killing of Cryptococcus, we found that NK cells from HIV-infected patients had defective binding of NK cells to C. neoformans. Moreover, those NK cells that bound to C. neoformans failed to polarize perforin-containing granules to the microbial synapse compared to healthy controls, suggesting that binding was insufficient to restore a defect in perforin polarization. We also identified lower expression of intracellular perforin and defective perforin release from NK cells of HIV-infected patients in response to C. neoformans. Importantly, treatment of NK cells from HIV-infected patients with IL-12 reversed the multiple defects in binding, granule polarization, perforin content, and perforin release and restored anticryptococcal activity. Thus, there are multiple defects in the cytolytic machinery of NK cells from HIV-infected patients, which cumulatively result in defective NK cell anticryptococcal activity, and each of these defects can be reversed with IL-12.

  19. Cell motility in chronic lymphocytic leukemia: defective Rap1 and alphaLbeta2 activation by chemokine.

    Science.gov (United States)

    Till, Kathleen J; Harris, Robert J; Linford, Andrea; Spiller, David G; Zuzel, Mirko; Cawley, John C

    2008-10-15

    Chemokine-induced activation of alpha4beta1 and alphaLbeta2 integrins (by conformational change and clustering) is required for lymphocyte transendothelial migration (TEM) and entry into lymph nodes. We have previously reported that chemokine-induced TEM is defective in chronic lymphocytic leukemia (CLL) and that this defect is a result of failure of the chemokine to induce polar clustering of alphaLbeta2; engagement of alpha4beta1 and autocrine vascular endothelial growth factor (VEGF) restore clustering and TEM. The aim of the present study was to characterize the nature of this defect in alphaLbeta2 activation and determine how it is corrected. We show here that the alphaLbeta2 of CLL cells is already in variably activated conformations, which are not further altered by chemokine treatment. Importantly, such treatment usually does not cause an increase in the GTP-loading of Rap1, a GTPase central to chemokine-induced activation of integrins. Furthermore, we show that this defect in Rap1 GTP-loading is at the level of the GTPase and is corrected in CLL cells cultured in the absence of exogenous stimuli, suggesting that the defect is the result of in vivo stimulation. Finally, we show that, because Rap1-induced activation of both alpha4beta1 and alphaLbeta2 is defective, autocrine VEGF and chemokine are necessary to activate alpha4beta1 for ligand binding. Subsequently, this binding and both VEGF and chemokine stimulation are all needed for alphaLbeta2 activation for motility and TEM. The present study not only clarifies the nature of the alphaLbeta2 defect of CLL cells but is the first to implicate activation of Rap1 in the pathophysiology of CLL.

  20. Behavior of deep level defects on voltage-induced stress of Cu(In,Ga)Se{sub 2} solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Lee, D.W.; Cho, S.E. [Department of Physics and Semiconductor Science, Dongguk University, Seoul (Korea, Republic of); Jeong, J.H. [Solar Cell Center, Korea Institute of Science and Technology, Seoul (Korea, Republic of); Cho, H.Y., E-mail: hycho@dongguk.edu [Department of Physics and Semiconductor Science, Dongguk University, Seoul (Korea, Republic of)

    2015-05-01

    The behavior of deep level defects by a voltage-induced stress for CuInGaSe{sub 2} (CIGS) solar cells has been investigated. CIGS solar cells were used with standard structures which are Al-doped ZnO/i-ZnO/CdS/CIGSe{sub 2}/Mo on soda lime glass, and that resulted in conversion efficiencies as high as 16%. The samples with the same structure were isothermally stressed at 100 °C under the reverse voltages. The voltage-induced stressing in CIGS samples causes a decrease in the carrier density and conversion efficiency. To investigate the behavior of deep level defects in the stressed CIGS cells, photo-induced current transient spectroscopy was utilized, and normally 3 deep level defects (including 2 hole traps and 1 electron trap) were found to be located at 0.18 eV and 0.29 eV above the valence band maximum (and 0.36 eV below the conduction band). In voltage-induced cells, especially, it was found that the decrease of the hole carrier density could be responsible for the increase of the 0.29 eV defect, which is known to be observed in less efficient CIGS solar cells. And the carrier density and the defects are reversible at least to a large extent by resting at room-temperature without the bias voltage. From optical capture kinetics in photo-induced current transient spectroscopy measurement, the types of defects could be distinguished into the isolated point defect and the extended defect. In this work, it is suggested that the increase of the 0.29 eV defect by voltage-induced stress could be due to electrical activation accompanied by a loss of positive ion species and the activated defect gives rise to reduction of the carrier density. - Highlights: • We investigated behavior of deep level defects by voltage-induced stress. • Defect generation could affect the decrease of the conversion efficiency of cells. • Defect generation could be electrically activated by a loss of positive ion species. • Type of defects could be studied with models of point defects

  1. The influence of γ-irradiation cobalt 60 on electrical properties of undoped GaAs treated with hydrogen plasma

    International Nuclear Information System (INIS)

    Korshunov, F.P.; Kurilovich, N.F.; Prokhorenko, T.A.; Bumaj, Yu.A.; Ul'yashin, A.G.

    1999-01-01

    The influence of exposition to a hydrogen plasma (hydrogenation) on the electrical properties alteration under gamma-irradiation in bulk GaAs have been investigated. It is shown that crystals hydrogenation before irradiation leads to particularly passivation of electrically active defects that are responsible for carriers scattering and removing processes in irradiated crystals. Radiation defects thermostability in hydrogenated GaAs crystals is lower than that in non hydrogenated ones. The energetic levels position of main defect that effects on electrical properties alteration after irradiation in GaAs crystals was detected. It is equal to E D =E C -0,125±0,0005 eV

  2. A device for tracking-down the defective fuel rods in a reactor

    International Nuclear Information System (INIS)

    Preda, Marin; Ciocanescu, Marin; Barbos, Dumitru; Rogociu, Ioan

    2008-01-01

    The paper gives first the fuel element description and its operation. If a cladding defect arises, some of the fission isotopes pass into the primary cooling system and, as these isotopes are extremely radio-active, the danger of primary cooling system contamination occurs what entails expensive decontamination operations. For identification of the bundle containing the defective pins a simple, modular device was designed and made. It works by pointing-out the bundle(s) which has at least one defective fuel pin. After tracking, the fuel bundle is picked-up from the core and searching is continued to point-out the defective pin inside post-irradiation-hot cells. For dosimetric survey in the reactor hall, an aerosol detector was used. When an accident arises the released noble gases will be detected by this detector. The detector can give no information where the damage is located for one of the fuel pins inside the irradiation devices (loop or capsule) can also get defective and consequently it can release radioactive noble gases in the reactor hall. For avoiding this a radioactive survey device for core cooling agent was mounted by the primary cooling system. The device for defective fuel rod identification in the nuclear reactor is composed of the following components: - a device for water sampling from the fuel bundle; - a suction valve; - a handling tool; - an electric pump; - ionic filters; - a flexible hose. When fission isotopes arise in primary cooling system, the device is brought to the edge of the reactor pool in a sharp positioning. By means of the handling tool the sampling device is inserted at the top of the fuel bundle. The suction inlet circuit and the electric pump are filled with pool water, and after that the ionic filter and outlet circuit are filled also. The electric pump is actuated and the following circuit is operated: fuel bundle, electric pump, ionic filter, pool. For avoiding the overheating of the pump, part of the flow is by

  3. Dynamics of Defects and Dopants in Complex Systems: Si and Oxide Surfaces and Interfaces

    Science.gov (United States)

    Kirichenko, Taras; Yu, Decai; Banarjee, Sanjay; Hwang, Gyeong

    2004-10-01

    Fabrication of forthcoming nanometer scale electronic devices faces many difficulties including formation of extremely shallow and highly doped junctions. At present, ultra-low-energy ion implantation followed by high-temperature thermal annealing is most widely used to fabricate such ultra-shallow junctions. In the process, a great challenge lies in achieving precise control of redistribution and electrical activation of dopant impurities. Native defects (such as vacancies and interstitials) generated during implantation are known to be mainly responsible for the TED and also influence significantly the electrical activation/deactivation. Defect-dopant dynamics is rather well understood in crystalline Si and SiO2. However, little is known about their diffusion and annihilation (or precipitation) at the surfaces and interfaces, despite its growing importance in determining junction profiles as device dimensions get smaller. In this talk, we will present our density functional theory calculation results on the atomic and electronic structure and dynamical behavior of native defects and dopant-defect complexes in disordered/strained Si and oxide systems, such as i) clean and absorbent-modified Si(100) surface and subsurface layers, ii) amorphous-crystalline Si interfaces and iii) amorphous SiO2/Si interfaces. The fundamental understanding and data is essential in developing a comprehensive kinetic model for junction formation, which would contribute greatly in improving current process technologies.

  4. Modeling electrically active viscoelastic membranes.

    Directory of Open Access Journals (Sweden)

    Sitikantha Roy

    Full Text Available The membrane protein prestin is native to the cochlear outer hair cell that is crucial to the ear's amplification and frequency selectivity throughout the whole acoustic frequency range. The outer hair cell exhibits interrelated dimensional changes, force generation, and electric charge transfer. Cells transfected with prestin acquire unique active properties similar to those in the native cell that have also been useful in understanding the process. Here we propose a model describing the major electromechanical features of such active membranes. The model derived from thermodynamic principles is in the form of integral relationships between the history of voltage and membrane resultants as independent variables and the charge density and strains as dependent variables. The proposed model is applied to the analysis of an active force produced by the outer hair cell in response to a harmonic electric field. Our analysis reveals the mechanism of the outer hair cell active (isometric force having an almost constant amplitude and phase up to 80 kHz. We found that the frequency-invariance of the force is a result of interplay between the electrical filtering associated with prestin and power law viscoelasticity of the surrounding membrane. Paradoxically, the membrane viscoelasticity boosts the force balancing the electrical filtering effect. We also consider various modes of electromechanical coupling in membrane with prestin associated with mechanical perturbations in the cell. We consider pressure or strains applied step-wise or at a constant rate and compute the time course of the resulting electric charge. The results obtained here are important for the analysis of electromechanical properties of membranes, cells, and biological materials as well as for a better understanding of the mechanism of hearing and the role of the protein prestin in this mechanism.

  5. Active magnetic bearings used as exciters for rolling element bearing outer race defect diagnosis.

    Science.gov (United States)

    Xu, Yuanping; Di, Long; Zhou, Jin; Jin, Chaowu; Guo, Qintao

    2016-03-01

    The active health monitoring of rotordynamic systems in the presence of bearing outer race defect is considered in this paper. The shaft is assumed to be supported by conventional mechanical bearings and an active magnetic bearing (AMB) is used in the mid of the shaft location as an exciter to apply electromagnetic force to the system. We investigate a nonlinear bearing-pedestal system model with the outer race defect under the electromagnetic force. The nonlinear differential equations are integrated using the fourth-order Runge-Kutta algorithm. The simulation and experimental results show that the characteristic signal of outer race incipient defect is significantly amplified under the electromagnetic force through the AMBs, which is helpful to improve the diagnosis accuracy of rolling element bearing׳s incipient outer race defect. Copyright © 2016 ISA. Published by Elsevier Ltd. All rights reserved.

  6. Polyaniline hybridized surface defective ZnO nanorods with long-term stable photoelectrochemical activity

    International Nuclear Information System (INIS)

    Bera, Susanta; Khan, Hasmat; Biswas, Indranil; Jana, Sunirmal

    2016-01-01

    Highlights: • Polyaniline (PANI) hybridized ZnO nanorods was synthesized by solution method. • Surface defects were found in the nanorods. • The hybrid material exhibited an enhancement in visible light absorption. • A long-term stable photoelectrochemical activity of the material was found. • Advancement in the properties would be PANI hybridization and surface defects. - Abstract: We report surfactant/template free precursor solution based synthesis of polyaniline (PANI) hybridized surface defective ZnO nanorods by a two-step process. Initially, ZnO nanorods have been prepared at 95 °C, followed by hybridization (coating) of PANI onto the ZnO via in situ polymerization of aniline monomer, forming ZnO-PANI nanohybrid (ZP). The structural properties of ZP have been analyzed by X-ray diffraction (XRD) and transmission electron microscopic (TEM) studies. The presence of surface defects especially the oxygen vacancies in ZnO has been characterized by photoluminescence emission, high resolution TEM, X-ray photoelectron spectroscopy (XPS) and micro-Raman spectral measurements. The chemical interaction of PANI with ZnO has been examined by Fourier transform infrared (FTIR) and XPS analyses. A significant enhancement in visible absorption of ZP sample is found as evidenced from UV–vis diffused reflectance spectral study. BET nitrogen adsorption-desorption isotherm shows an improved textural property (pore size, pore volume) of ZP. Moreover, a long-term stable photoelectrochemical activity (PEC) of ZP is found compare to pristine ZnO. The synergic effect of PANI hybridization and the presence of surface defects in ZnO NRs can enhance the PEC by prolonging the recombination rate of photogenerated charge carriers. The effect can also provide large number of active sites to make electrolyte diffusion and mass transportation easier in the nanohybrid. This simple synthesis strategy can be adopted for PANI hybridization with different metal oxide semiconductors

  7. Polyaniline hybridized surface defective ZnO nanorods with long-term stable photoelectrochemical activity

    Energy Technology Data Exchange (ETDEWEB)

    Bera, Susanta; Khan, Hasmat [Sol-Gel Division, CSIR-Central Glass and Ceramic Research Institute (CSIR-CGCRI), 196 Raja S.C. Mullick Road, P.O. Jadavpur University, Kolkata 700 032, West Bengal (India); Biswas, Indranil [Materials Characterization and Instrumentation Division, CSIR-Central Glass and Ceramic Research Institute (CSIR-CGCRI), 196 Raja S.C. Mullick Road, P.O. Jadavpur University, Kolkata 700 032, West Bengal (India); Jana, Sunirmal, E-mail: sjana@cgcri.res.in [Sol-Gel Division, CSIR-Central Glass and Ceramic Research Institute (CSIR-CGCRI), 196 Raja S.C. Mullick Road, P.O. Jadavpur University, Kolkata 700 032, West Bengal (India)

    2016-10-15

    Highlights: • Polyaniline (PANI) hybridized ZnO nanorods was synthesized by solution method. • Surface defects were found in the nanorods. • The hybrid material exhibited an enhancement in visible light absorption. • A long-term stable photoelectrochemical activity of the material was found. • Advancement in the properties would be PANI hybridization and surface defects. - Abstract: We report surfactant/template free precursor solution based synthesis of polyaniline (PANI) hybridized surface defective ZnO nanorods by a two-step process. Initially, ZnO nanorods have been prepared at 95 °C, followed by hybridization (coating) of PANI onto the ZnO via in situ polymerization of aniline monomer, forming ZnO-PANI nanohybrid (ZP). The structural properties of ZP have been analyzed by X-ray diffraction (XRD) and transmission electron microscopic (TEM) studies. The presence of surface defects especially the oxygen vacancies in ZnO has been characterized by photoluminescence emission, high resolution TEM, X-ray photoelectron spectroscopy (XPS) and micro-Raman spectral measurements. The chemical interaction of PANI with ZnO has been examined by Fourier transform infrared (FTIR) and XPS analyses. A significant enhancement in visible absorption of ZP sample is found as evidenced from UV–vis diffused reflectance spectral study. BET nitrogen adsorption-desorption isotherm shows an improved textural property (pore size, pore volume) of ZP. Moreover, a long-term stable photoelectrochemical activity (PEC) of ZP is found compare to pristine ZnO. The synergic effect of PANI hybridization and the presence of surface defects in ZnO NRs can enhance the PEC by prolonging the recombination rate of photogenerated charge carriers. The effect can also provide large number of active sites to make electrolyte diffusion and mass transportation easier in the nanohybrid. This simple synthesis strategy can be adopted for PANI hybridization with different metal oxide semiconductors

  8. New fundamental defects in a-SiO2

    International Nuclear Information System (INIS)

    Karna, S.P.; Kurtz, H.A.; Shedd, W.M.; Pugh, R.D.; Singaraju, B.K.

    1999-01-01

    Throughout the three decades of research into radiation-induced degradation of metal-oxide-semiconductor (MOS) devices, investigators understood that point defects in the Si-SiO 2 structure (localized deviations from stoichiometrically pure Si and SiO 2 ) are responsible for many observed anomalies. Basic research in this area has progressed along two tracks: (i) differentiating the anomalies based upon subtle differences in their characteristic behavior, and (ii) precise description of the defects responsible for the anomalous behavior. These two research tracks are complementary since often a discovery in one area provides insight and ultimately leads to discoveries in the other. Here, the atomic structure and spin properties of two previously undescribed amorphous silicon dioxide fundamental point defects have been characterized for the first time by ab initio quantum mechanical calculations. Both defects are electrically neutral trivalent silicon centers in the oxide. One of the defects, the X-center, is determined to have an O 2 Sitriple b ondSi ↑ atomic structure. The other defect, called the Y-center, is found to have an OSi 2 triple b ondSi ↑ structure. Calculated electronic and electrical properties of the new defect centers are consistent with the published characteristics of the oxide switching trap or border trap precursors

  9. Localised surface plasmon-like resonance generated by microwave electromagnetic waves in pipe defects

    Science.gov (United States)

    Alobaidi, Wissam M.; Nima, Zeid A.; Sandgren, Eric

    2018-01-01

    Localised surface plasmon (LSP)-like resonance phenomena were simulated in COMSOL Multiphysics™, and the electric field enhancement was evaluated in eight pipe defects using the microwave band from 1.80 to 3.00 GHz and analysed by finite element analysis (FEA). The simulation was carried out, in each defect case, on a pipe that has 762 mm length and 152.4 mm inner diameter, and 12.7 mm pipe wall thickness. Defects were positioned in the middle of the pipe and were named as follows; SD: Square Defect, FCD: fillet corner defect, FD: fillet defect, HCD: half circle defect, TCD: triangle corner defect, TD: triangle defect, ZD: zigzag defect, GD: gear defect. The LSP electric field, and scattering parametric (S21, and S11) waves were evaluated in all cases and found to be strongly dependent on the size and the shape of the defect rather than the pipe and or the medium materials.

  10. Scanning tip measurement for identification of point defects

    Directory of Open Access Journals (Sweden)

    Raineri Vito

    2011-01-01

    Full Text Available Abstract Self-assembled iron-silicide nanostructures were prepared by reactive deposition epitaxy of Fe onto silicon. Capacitance-voltage, current-voltage, and deep level transient spectroscopy (DLTS were used to measure the electrical properties of Au/silicon Schottky junctions. Spreading resistance and scanning probe capacitance microscopy (SCM were applied to measure local electrical properties. Using a preamplifier the sensitivity of DLTS was increased satisfactorily to measure transients of the scanning tip semiconductor junction. In the Fe-deposited area, Fe-related defects dominate the surface layer in about 0.5 μm depth. These defects deteriorated the Schottky junction characteristic. Outside the Fe-deposited area, Fe-related defect concentration was identified in a thin layer near the surface. The defect transients in this area were measured both in macroscopic Schottky junctions and by scanning tip DLTS and were detected by bias modulation frequency dependence in SCM.

  11. Synergy of corrosion activity and defects in weld bonds

    Directory of Open Access Journals (Sweden)

    Michal Černý

    2004-01-01

    Full Text Available Presented work evaluates synergism of atmosphere corrosive action and material defects. These defects appear not only during particular technological process of connecting of structural material but also during cooling and up to hundreds hours afterwards. The multiplication of degradation impact of defects in joint welds and heat-affected zone caused by activity of atmosphere acidic medium is simulated in condensation chambers. The verification is realized by use of mechanical uniaxial tension loading and following fractographic and metalgraphic analysis.The metal plasticity is sufficient factor to eliminate thermal stress in tough metal (11 373. This is reflected in more homogenous weld root area (with no cracks. The corrosion influence of environment is in case of such specimens limited to very slight decrease of weld maximum load. The ultimate strength value decreases approximately for 20MPa only in contrast to dramatic strength decrease in case of 11 503 material. Before metalographic examination was observed surprisingly great value of load capacity of spot welds. These welds were not ruptured nor in a single case even during maximum length of corrosion exploitation. The consequent material analysis discovered high qualitative material and strength properties of this kind of joint.

  12. Command of active matter by topological defects and patterns

    Science.gov (United States)

    Peng, Chenhui; Turiv, Taras; Guo, Yubing; Wei, Qi-Huo; Lavrentovich, Oleg D.

    2016-11-01

    Self-propelled bacteria are marvels of nature with a potential to power dynamic materials and microsystems of the future. The challenge lies in commanding their chaotic behavior. By dispersing swimming Bacillus subtilis in a liquid crystalline environment with spatially varying orientation of the anisotropy axis, we demonstrate control over the distribution of bacterial concentration, as well as the geometry and polarity of their trajectories. Bacteria recognize subtle differences in liquid crystal deformations, engaging in bipolar swimming in regions of pure splay and bend but switching to unipolar swimming in mixed splay-bend regions. They differentiate topological defects, heading toward defects of positive topological charge and avoiding negative charges. Sensitivity of bacteria to preimposed orientational patterns represents a previously unknown facet of the interplay between hydrodynamics and topology of active matter.

  13. Probing of O2 vacancy defects and correlated magnetic, electrical and photoresponse properties in indium-tin oxide nanostructures by spectroscopic techniques

    Science.gov (United States)

    Ghosh, Shyamsundar; Dev, Bhupendra Nath

    2018-05-01

    Indium-tin oxide (ITO) 1D nanostructures with tunable morphologies i.e. nanorods, nanocombs and nanowires are grown on c-axis (0 0 0 1) sapphire (Al2O3) substrate in oxygen deficient atmosphere through pulsed laser deposition (PLD) technique and the effect of oxygen vacancies on optical, electrical, magnetic and photoresponse properties is investigated using spectroscopic methods. ITO nanostructures are found to be enriched with significant oxygen vacancy defects as evident from X-ray photoelectron and Raman spectroscopic analysis. Photoluminescence spectra exhibited intense mid-band blue emission at wavelength of region of 400-450 nm due to the electronic transition from conduction band maxima (CBM) to the singly ionized oxygen-vacancy (VO+) defect level within the band-gap. Interestingly, ITO nanostructures exhibited significant room-temperature ferromagnetism (RTFM) and the magnetic moment found proportional to concentration of VO+ defects which indicates VO+ defects are mainly responsible for the observed RTFM in nanostructures. ITO nanowires being enriched with more VO+ defects exhibited strongest RTFM as compared to other morphologies. Current voltage (I-V) characteristics of ITO nanostructures showed an enhancement of current under UV light as compared to dark which indicates such 1D nanostructure can be used as photovoltaic material. Hence, the study shows that there is ample opportunity to tailor the properties of ITOs through proper defect engineering's and such photosensitive ferromagnetic semiconductors might be promising for spintronic and photovoltaic applications.

  14. Fast thermal annealing of implantation defects in silicon. Solid phase epitaxy and residual imperfection recovery

    International Nuclear Information System (INIS)

    Adekoya, O.A.

    1987-06-01

    Basic processes ruling the crystal reconstitution in solid phase during fast thermal annealing are studied; the role of electronic and thermodynamic effects at the interface is precised, following the implantations of a donor element (p + ), an acceptor element (B + ) and an intrinsic element (Ge + ). Then, after recrystallization, the electric role of residual point defects is shown together with the possibility of total recovery and an important electric activation of the doping [fr

  15. Mimicking muscle activity with electrical stimulation

    Science.gov (United States)

    Johnson, Lise A.; Fuglevand, Andrew J.

    2011-02-01

    Functional electrical stimulation is a rehabilitation technology that can restore some degree of motor function in individuals who have sustained a spinal cord injury or stroke. One way to identify the spatio-temporal patterns of muscle stimulation needed to elicit complex upper limb movements is to use electromyographic (EMG) activity recorded from able-bodied subjects as a template for electrical stimulation. However, this requires a transfer function to convert the recorded (or predicted) EMG signals into an appropriate pattern of electrical stimulation. Here we develop a generalized transfer function that maps EMG activity into a stimulation pattern that modulates muscle output by varying both the pulse frequency and the pulse amplitude. We show that the stimulation patterns produced by this transfer function mimic the active state measured by EMG insofar as they reproduce with good fidelity the complex patterns of joint torque and joint displacement.

  16. Role of masking oxide on silicon in processes of defect generation at formation of SIMOX structures

    CERN Document Server

    Askinazi, A Y; Miloglyadova, L V

    2002-01-01

    One investigated into Si-SiO sub 2 structures formed by implantation of oxygen ions into silicon (SIMOX-technology) by means of techniques based on measuring of high-frequency volt-farad characteristics and by means of electroluminescence. One determined existence of electrically active centres and of luminescence centres in the formed oxide layer near boundary with silicon. One clarified the role SiO sub 2 masking layer in silicon in defect generation under formation of the masked oxide layer. One established dependence of concentration of electrically active and luminescence centres on thickness of masking layer

  17. Defects formation and spiral waves in a network of neurons in presence of electromagnetic induction.

    Science.gov (United States)

    Rostami, Zahra; Jafari, Sajad

    2018-04-01

    Complex anatomical and physiological structure of an excitable tissue (e.g., cardiac tissue) in the body can represent different electrical activities through normal or abnormal behavior. Abnormalities of the excitable tissue coming from different biological reasons can lead to formation of some defects. Such defects can cause some successive waves that may end up to some additional reorganizing beating behaviors like spiral waves or target waves. In this study, formation of defects and the resulting emitted waves in an excitable tissue are investigated. We have considered a square array network of neurons with nearest-neighbor connections to describe the excitable tissue. Fundamentally, electrophysiological properties of ion currents in the body are responsible for exhibition of electrical spatiotemporal patterns. More precisely, fluctuation of accumulated ions inside and outside of cell causes variable electrical and magnetic field. Considering undeniable mutual effects of electrical field and magnetic field, we have proposed the new Hindmarsh-Rose (HR) neuronal model for the local dynamics of each individual neuron in the network. In this new neuronal model, the influence of magnetic flow on membrane potential is defined. This improved model holds more bifurcation parameters. Moreover, the dynamical behavior of the tissue is investigated in different states of quiescent, spiking, bursting and even chaotic state. The resulting spatiotemporal patterns are represented and the time series of some sampled neurons are displayed, as well.

  18. Crystallization to polycrystalline silicon thin film and simultaneous inactivation of electrical defects by underwater laser annealing

    Energy Technology Data Exchange (ETDEWEB)

    Machida, Emi [Graduate School of Materials Science, Nara Institute of Science and Technology, 8916-5 Takayama-cho, Ikoma, Nara 630-0192 (Japan); Research Fellowships of the Japan Society for the Promotion of Science, Japan Society for the Promotion of Science, 1-8 Chiyoda, Tokyo 102-8472 (Japan); Horita, Masahiro; Ishikawa, Yasuaki; Uraoka, Yukiharu [Graduate School of Materials Science, Nara Institute of Science and Technology, 8916-5 Takayama-cho, Ikoma, Nara 630-0192 (Japan); Core Research for Evolutional Science and Technology, Japan Science and Technology Agency, Honcho, Kawaguchi, Saitama 332-0012 (Japan); Ikenoue, Hiroshi [Graduate School of Information Science and Electrical Engineering, Kyushu University, 744 Motooka Nishi-ku, Fukuoka 819-0395 (Japan)

    2012-12-17

    We propose a low-temperature laser annealing method of a underwater laser annealing (WLA) for polycrystalline silicon (poly-Si) films. We performed crystallization to poly-Si films by laser irradiation in flowing deionized-water where KrF excimer laser was used for annealing. We demonstrated that the maximum value of maximum grain size of WLA samples was 1.5 {mu}m, and that of the average grain size was 2.8 times larger than that of conventional laser annealing in air (LA) samples. Moreover, WLA forms poly-Si films which show lower conductivity and larger carrier life time attributed to fewer electrical defects as compared to LA poly-Si films.

  19. Defect structure in proton-irradiated copper and nickel

    International Nuclear Information System (INIS)

    Tsukuda, Noboru; Ehrhart, P.; Jaeger, W.; Schilling, W.; Dworschak, F.; Gadalla, A.A.

    1987-01-01

    This single crystals of copper or nickel with a thickness of about 10 μm are irradiated with 3 MeV protons at room temperature and the structures of resultant defects are investigated based on measurements of the effects of irradiation on the electrical resistivity, length, lattice constants, x-ray diffraction line profile and electron microscopic observations. The measurements show that the electrical resistivity increases with irradiation dose, while leveling off at high dose due to overlapping of irradiation cascades. The lattice constants decreases, indicating that many vacancies still remain while most of the interstitial stoms are eliminated, absorbed or consumed for dislocation loop formation. The x-ray line profile undergoes broadening, which is the result of dislocation loops, dislocation networks and SFT's introduced by the proton irradiation. Various defects have different effects though they cannot be identified separately from the profile alone. A satellite peak appears at a low angle, which seems to arise from periodic defect structures that are found in electron microscopic observations. In both copper and nickel, such periodic defect structures are seen over a wide range from high to low dose. Defect-free and defect-rich domains (defect walls), 0.5 to several μm in size, are alingned parallel to the {001} plane at intervals of 60 nm. The defect walls, which consist of dislocations, dislocation loops and SFT's, is 20 - 40 nm thick. (Nogami, K.)

  20. Point defect induced degradation of electrical properties of Ga2O3 by 10 MeV proton damage

    Science.gov (United States)

    Polyakov, A. Y.; Smirnov, N. B.; Shchemerov, I. V.; Yakimov, E. B.; Yang, Jiancheng; Ren, F.; Yang, Gwangseok; Kim, Jihyun; Kuramata, A.; Pearton, S. J.

    2018-01-01

    Deep electron and hole traps in 10 MeV proton irradiated high-quality β-Ga2O3 films grown by Hydride Vapor Phase Epitaxy (HVPE) on bulk β-Ga2O3 substrates were measured by deep level transient spectroscopy with electrical and optical injection, capacitance-voltage profiling in the dark and under monochromatic irradiation, and also electron beam induced current. Proton irradiation caused the diffusion length of charge carriers to decrease from 350-380 μm in unirradiated samples to 190 μm for a fluence of 1014 cm-2, and this was correlated with an increase in density of hole traps with optical ionization threshold energy near 2.3 eV. These defects most likely determine the recombination lifetime in HVPE β-Ga2O3 epilayers. Electron traps at Ec-0.75 eV and Ec-1.2 eV present in as-grown samples increase in the concentration after irradiation and suggest that these centers involve native point defects.

  1. Quasi-one-dimensional metals on semiconductor surfaces with defects

    International Nuclear Information System (INIS)

    Hasegawa, Shuji

    2010-01-01

    Several examples are known in which massive arrays of metal atomic chains are formed on semiconductor surfaces that show quasi-one-dimensional metallic electronic structures. In this review, Au chains on Si(557) and Si(553) surfaces, and In chains on Si(111) surfaces, are introduced and discussed with regard to the physical properties determined by experimental data from scanning tunneling microscopy (STM), angle-resolved photoemission spectroscopy (ARPES) and electrical conductivity measurements. They show quasi-one-dimensional Fermi surfaces and parabolic band dispersion along the chains. All of them are known from STM and ARPES to exhibit metal-insulator transitions by cooling and charge-density-wave formation due to Peierls instability of the metallic chains. The electrical conductivity, however, reveals the metal-insulator transition only on the less-defective surfaces (Si(553)-Au and Si(111)-In), but not on a more-defective surface (Si(557)-Au). The latter shows an insulating character over the whole temperature range. Compared with the electronic structure (Fermi surfaces and band dispersions), the transport property is more sensitive to the defects. With an increase in defect density, the conductivity only along the metal atomic chains was significantly reduced, showing that atomic-scale point defects decisively interrupt the electrical transport along the atomic chains and hide the intrinsic property of transport in quasi-one-dimensional systems.

  2. The comparison of gamma-radiation and electrical stress influences on oxide and interface defects in power VDMOSFET

    Directory of Open Access Journals (Sweden)

    Đorić-Veljković Snežana M.

    2013-01-01

    Full Text Available The behaviour of oxide and interface defects in n-channel power vertical double-diffused metal-oxide-semiconductor field-effect transistors, firstly degraded by the gamma-irradiation and electric field and subsequently recovered and annealed, is presented. By analyzing the transfer characteristic shifts, the changes of threshold voltage and underlying changes of gate oxide and interface trap densities during the stress (recovery, annealing of investigated devices, it is shown that these two types of stress influence differently on the gate oxide and the SiO2-Si interface. [Projekat Ministarstva nauke Republike Srbije, br. OI171026

  3. Defective homing is associated with altered Cdc42 activity in cells from patients with Fanconi anemia group A

    Science.gov (United States)

    Zhang, Xiaoling; Shang, Xun; Guo, Fukun; Murphy, Kim; Kirby, Michelle; Kelly, Patrick; Reeves, Lilith; Smith, Franklin O.; Williams, David A.

    2008-01-01

    Previous studies showed that Fanconi anemia (FA) murine stem cells have defective reconstitution after bone marrow (BM) transplantation. The mechanism underlying this defect is not known. Here, we report defective homing of FA patient BM progenitors transplanted into mouse models. Using cells from patients carrying mutations in FA complementation group A (FA-A), we show that when transplanted into nonobese diabetic/severe combined immunodeficiency (NOD/SCID) recipient mice, FA-A BM cells exhibited impaired homing activity. FA-A cells also showed defects in both cell-cell and cell-matrix adhesion. Complementation of FA-A deficiency by reexpression of FANCA readily restored adhesion of FA-A cells. A significant decrease in the activity of the Rho GTPase Cdc42 was found associated with these defective functions in patient-derived cells, and expression of a constitutively active Cdc42 mutant was able to rescue the adhesion defect of FA-A cells. These results provide the first evidence that FA proteins influence human BM progenitor homing and adhesion via the small GTPase Cdc42-regulated signaling pathway. PMID:18565850

  4. Study of phosphorus implanted and annealed silicon by electrical measurements and ion channeling technique

    CERN Document Server

    Hadjersi, T; Zilabdi, M; Benazzouz, C

    2002-01-01

    We investigated the effect of annealing temperature on the electrical activation of phosphorus implanted into silicon. The measurements performed using spreading resistance, four-point probe and ion channeling techniques have allowed us to establish the existence of two domains of variation of the electrical activation (350-700 deg. C) and (800-1100 deg. C). The presence of reverse annealing and the annihilation of defects have been put in a prominent position in the first temperature range. It has been shown that in order to achieve a complete electrical activation, the annealing temperature must belong to the second domain (800-1100 deg. C).

  5. Reconstructive Effects of Percutaneous Electrical Stimulation Combined with GGT Composite on Large Bone Defect in Rats

    Directory of Open Access Journals (Sweden)

    Bo-Yin Yang

    2013-01-01

    Full Text Available Previous studies have shown the electromagnetic stimulation improves bone remodeling and bone healing. However, the effect of percutaneous electrical stimulation (ES was not directly explored. The purpose of this study was to evaluate effect of ES on improvement of bone repair. Twenty-four adult male Sprague-Dawley rats were used for cranial implantation. We used a composite comprising genipin cross-linked gelatin mixed with tricalcium phosphate (GGT. Bone defects of all rats were filled with the GGT composites, and the rats were assigned into six groups after operation. The first three groups underwent 4, 8, and 12 weeks of ES, and the anode was connected to the backward of the defect on the neck; the cathode was connected to the front of the defect on the head. Rats were under inhalation anesthesia during the stimulation. The other three groups only received inhalation anesthesia without ES, as control groups. All the rats were examined afterward at 4, 8, and 12 weeks. Radiographic examinations including X-ray and micro-CT showed the progressive bone regeneration in the both ES and non-ES groups. The amount of the newly formed bone increased with the time between implantation and examination in the ES and non-ES groups and was higher in the ES groups. Besides, the new bone growth trended on bilateral sides in ES groups and accumulated in U-shape in non-ES groups. The results indicated that ES could improve bone repair, and the effect is higher around the cathode.

  6. Characterization of deep level defects and thermally stimulated depolarization phenomena in La-doped TlInS2 layered semiconductor

    International Nuclear Information System (INIS)

    Seyidov, MirHasan Yu.; Suleymanov, Rauf A.; Mikailzade, Faik A.; Kargın, Elif Orhan; Odrinsky, Andrei P.

    2015-01-01

    Lanthanum-doped high quality TlInS 2 (TlInS 2 :La) ferroelectric-semiconductor was characterized by photo-induced current transient spectroscopy (PICTS). Different impurity centers are resolved and identified. Analyses of the experimental data were performed in order to determine the characteristic parameters of the extrinsic and intrinsic defects. The energies and capturing cross section of deep traps were obtained by using the heating rate method. The observed changes in the Thermally Stimulated Depolarization Currents (TSDC) near the phase transition points in TlInS 2 :La ferroelectric-semiconductor are interpreted as a result of self-polarization of the crystal due to the internal electric field caused by charged defects. The TSDC spectra show the depolarization peaks, which are attributed to defects of dipolar origin. These peaks provide important information on the defect structure and localized energy states in TlInS 2 :La. Thermal treatments of TlInS 2 :La under an external electric field, which was applied at different temperatures, allowed us to identify a peak in TSDC which was originated from La-dopant. It was established that deep energy level trap BTE43, which are active at low temperature (T ≤ 156 K) and have activation energy 0.29 eV and the capture cross section 2.2 × 10 −14 cm 2 , corresponds to the La dopant. According to the PICTS results, the deep level trap center B5 is activated in the temperature region of incommensurate (IC) phases of TlInS 2 :La, having the giant static dielectric constant due to the structural disorders. From the PICTS simulation results for B5, native deep level trap having an activation energy of 0.3 eV and the capture cross section of 1.8 × 10 −16 cm 2 were established. A substantial amount of residual space charges is trapped by the deep level localized energy states of B5 in IC-phase. While the external electric field is applied, permanent dipoles, which are originated from the charged B5

  7. Pulse-height defect in single-crystal CVD diamond detectors

    Energy Technology Data Exchange (ETDEWEB)

    Beliuskina, O.; Imai, N. [The University of Tokyo, Center for Nuclear Study, Wako, Saitama (Japan); Strekalovsky, A.O.; Aleksandrov, A.A.; Aleksandrova, I.A.; Ilich, S.; Kamanin, D.V.; Knyazheva, G.N.; Kuznetsova, E.A.; Mishinsky, G.V.; Pyatkov, Yu.V.; Strekalovsky, O.V.; Zhuchko, V.E. [JINR, Flerov Laboratory of Nuclear Reactions, Dubna, Moscow Region (Russian Federation); Devaraja, H.M. [Manipal University, Manipal Centre for Natural Sciences, Manipal, Karnataka (India); Heinz, C. [II. Physikalisches Institut, Justus-Liebig-Universitaet Giessen, Giessen (Germany); Heinz, S. [II. Physikalisches Institut, Justus-Liebig-Universitaet Giessen, Giessen (Germany); GSI Helmholtzzentrum fuer Schwerionenforschung, Darmstadt (Germany); Hofmann, S.; Kis, M.; Kozhuharov, C.; Maurer, J.; Traeger, M. [GSI Helmholtzzentrum fuer Schwerionenforschung, Darmstadt (Germany); Pomorski, M. [CEA, LIST, Diamond Sensor Laboratory, CEA/Saclay, Gif-sur-Yvette (France)

    2017-02-15

    The pulse-height versus deposited energy response of a single-crystal chemical vapor deposition (scCVD) diamond detector was measured for ions of Ti, Cu, Nb, Ag, Xe, Au, and of fission fragments of {sup 252} Cf at different energies. For the fission fragments, data were also measured at different electric field strengths of the detector. Heavy ions have a significant pulse-height defect in CVD diamond material, which increases with increasing energy of the ions. It also depends on the electrical field strength applied at the detector. The measured pulse-height defects were explained in the framework of recombination models. Calibration methods known from silicon detectors were modified and applied. A comparison with data for the pulse-height defect in silicon detectors was performed. (orig.)

  8. Science Activities in Energy: Electrical Energy.

    Science.gov (United States)

    Oak Ridge Associated Universities, TN.

    Presented is a science activities in energy package which includes 16 activities relating to electrical energy. Activities are simple, concrete experiments for fourth, fifth and sixth grades which illustrate principles and problems relating to energy. Each activity is outlined in a single card which is introduced by a question. A teacher's…

  9. Diffusive, Structural, Optical, and Electrical Properties of Defects in Semiconductors

    CERN Multimedia

    Wagner, F E

    2002-01-01

    Electronic properties of semiconductors are extremely sensitive to defects and impurities that have localized electronic states with energy levels in the band gap of the semiconductor. Spectroscopic techniques like photoluminescence (PL), deep level transient spectroscopy (DLTS), or Hall effect, that are able to detect and characterize band gap states do not reveal direct information about their microscopic origin. To overcome this chemical "blindness", the present approach is to use radioactive isotopes as a tracer. Moreover, the recoil energies involved in $\\beta$ and $\\gamma$-decays can be used to create intrinsic isolated point defects (interstitials, vacancies) in a controlled way. A microscopic insight into the structure and the thermodynamic properties of complexes formed by interacting defects can be gained by detecting the hyperfine interaction between the nuclear moments of radioactive dopants and the electromagnetic fields present at the site of the radioactive nucleus. The understanding and the co...

  10. Investigation of Defects Origin in p-Type Si for Solar Applications

    Science.gov (United States)

    Gwóźdź, Katarzyna; Placzek-Popko, Ewa; Mikosza, Maciej; Zielony, Eunika; Pietruszka, Rafal; Kopalko, Krzysztof; Godlewski, Marek

    2017-07-01

    In order to improve the efficiency of a solar cell based on silicon, one must find a compromise between its price and crystalline quality. That is precisely why the knowledge of defects present in the material is of primary importance. This paper studies the defects in commercially available cheap Schottky titanium/gold silicon wafers. The electrical properties of the diodes were defined by using current-voltage and capacitance-voltage measurements. Low series resistance and ideality factor are proofs of the good quality of the sample. The concentration of the acceptors is in accordance with the manufacturer's specifications. Deep level transient spectroscopy measurements were used to identify the defects. Three hole traps were found with activation energies equal to 0.093 eV, 0.379 eV, and 0.535 eV. Comparing the values with the available literature, the defects were determined as connected to the presence of iron interstitials in the silicon. The quality of the silicon wafer seems good enough to use it as a substrate for the solar cell heterojunctions.

  11. Anisotropy of electrical conductivity in dc due to intrinsic defect formation in α-Al{sub 2}O{sub 3} single crystal implanted with Mg ions

    Energy Technology Data Exchange (ETDEWEB)

    Tardío, M., E-mail: mtardio@fis.uc3m.es [Departamento de Física, Escuela Politécnica Superior, Universidad Carlos III, Avda. de la Universidad, 30, 28911 Leganés (Madrid) (Spain); Egaña, A.; Ramírez, R.; Muñoz-Santiuste, J.E. [Departamento de Física, Escuela Politécnica Superior, Universidad Carlos III, Avda. de la Universidad, 30, 28911 Leganés (Madrid) (Spain); Alves, E. [Instituto de Plasmas e Fusão Nuclear, Instituto Superior Técnico, Universidade de Lisboa, 2695-066 Bobadela (Portugal)

    2016-07-15

    The electrical conductivity in α-Al{sub 2}O{sub 3} single crystals implanted with Mg ions in two different crystalline orientations, parallel and perpendicular to c axis, was investigated. The samples were implanted at room temperature with energies of 50 and 100 keV and fluences of 1 × 10{sup 15}, 5 × 10{sup 15} and 5 × 10{sup 16} ions/cm{sup 2}. Optical characterization reveals slight differences in the absorption bands at 6.0 and 4.2 eV, attributed to F type centers and Mie scattering from Mg precipitates, respectively. DC electrical measurements using the four and two-point probe methods, between 295 and 490 K, were used to characterize the electrical conductivity of the implanted area (Meshakim and Tanabe, 2001). Measurements in this temperature range indicate that: (1) the electrical conductivity is thermally activated independently of crystallographic orientation, (2) resistance values in the implanted region decrease with fluence levels, and (3) the I–V characteristic of electrical contacts in samples with perpendicular c axis orientation is clearly ohmic, whereas contacts are blocking in samples with parallel c axis. When thin layers are sequentially removed from the implanted region by immersing the sample in a hot solution of nitric and fluorhydric acids the electrical resistance increases until reaching the values of non-implanted crystal (Jheeta et al., 2006). We conclude that the enhancement in conductivity observed in the implanted regions is related to the intrinsic defects created by the implantation rather than to the implanted Mg ions (da Silva et al., 2002; Tardío et al., 2001; Tardío et al., 2008).

  12. Electrical activation and local structure of Se atoms in ion-implanted indium phosphide

    International Nuclear Information System (INIS)

    Yu, K.M.; Chan, N.; Hsu, L.

    1996-01-01

    The solid phase regrowth, dopant activation, and local environments of Se-implanted InP are investigated with ion-beam techniques and extended x-ray-absorption fine structure spectroscopy. We find that the local Se endash In structure is already established in the as-implanted amorphous InP although the Se atoms have a lower average coordination number (∼3.5) and no long-range order. After high-temperature rapid thermal annealing (950 degree C, 5 s), the amorphous InP regrows, becoming a single crystal with the Se atoms bonded to four In neighbors; however, only ∼50% of the Se becomes electrically active. Part of the Se precipitates in the form of an In endash Se phase, another part is compensated by defects which are not totally removed by annealing. The Se emdash In bond distance for a Se on a P site is 4.5% longer than the matrix In emdash P bond length, introducing large strains in the crystal. The solid solubility of Se in InP is estimated from our results to be ≅8.7x10 19 /cm 3 while the electron concentration saturates at 5.4x10 19 /cm 3 . Se atoms in InP regrown at lower temperatures in a furnace are only ∼7% electrically active and are found to have different local environments (higher coordination number and shorter bond distance) than those in the InP perfectly regrown at higher temperature. copyright 1996 American Institute of Physics

  13. Scintigraphic evaluation of the osteoblastic activity of rabbit tibial defects after HYAFF11 membrane application.

    Science.gov (United States)

    Mermerkaya, Musa Uğur; Doral, Mahmut Nedim; Karaaslan, Fatih; Huri, Gazi; Karacavuş, Seyhan; Kaymaz, Burak; Alkan, Erkan

    2016-05-03

    An unfavorable condition for bone healing is the presence of bone defects. Under such conditions, a material can play a role to cover fractured or defective bone. Technological advances now allow for the use of such material. Hyalonect(®) (Fidia Advanced Biopolymers SLR, Italy), a novel membrane comprising knitted fibers of esterified hyaluronan (HYAFF11) can be used to cover fractured or grafted bone and can also serve as a scaffold to keep osteoprogenitor cells in place. The aim of this study was to compare osteoblastic activity by the use of scintigraphic methods in defective rabbit tibias during early-phase bone healing with or without a hyaluronan-based mesh. Two groups (A and B) of New Zealand albino rabbits were used; each group included 10 animals. Operations on all rabbits were performed under general anesthesia. We also resected 10-mm bone segments from each animal's tibial diaphysis. After resection, tibias with defects were fixed using Kirschner wires. In group A, no hyaluronan-based mesh was used. In group B, tibial segmental defects were enclosed with a hyaluronan-based mesh. The rabbits were followed up for 4 weeks postoperatively, after which bone scintigraphic studies were performed on each animal to detect and compare osteoblastic activity. The mean count in the fracture side of the hyaluronan-based mesh group was significantly higher compared to that of the group A (p = 0.019). However, there was no significant difference between group B and control rabbits with respect to the mean count on the intact bone side (p = 0.437). The bone defect (fracture)/intact bone mean count ratio was significantly higher in group B compared to group A (p = 0.008). A hyaluronan-based mesh plays a role in promoting osteoblastic activity. Hyalonect(®) is suitable for restoring tissue continuity whenever the periosteal membrane is structurally impaired or inadequate. Our results demonstrated that, during early-phase bone healing, osteoblastic activity

  14. Characterization of deep level defects and thermally stimulated depolarization phenomena in La-doped TlInS{sub 2} layered semiconductor

    Energy Technology Data Exchange (ETDEWEB)

    Seyidov, MirHasan Yu., E-mail: smirhasan@gyte.edu.tr; Suleymanov, Rauf A.; Mikailzade, Faik A. [Department of Physics, Gebze Technical University, Gebze, Kocaeli 41400 (Turkey); Institute of Physics of NAS of Azerbaijan, H. Javid ave. 33, Baku AZ-1143 (Azerbaijan); Kargın, Elif Orhan [Department of Physics, Gebze Technical University, Gebze, Kocaeli 41400 (Turkey); Odrinsky, Andrei P. [Institute of Technical Acoustics, National Academy of Sciences of Belarus, Lyudnikov ave. 13, Vitebsk 210717 (Belarus)

    2015-06-14

    Lanthanum-doped high quality TlInS{sub 2} (TlInS{sub 2}:La) ferroelectric-semiconductor was characterized by photo-induced current transient spectroscopy (PICTS). Different impurity centers are resolved and identified. Analyses of the experimental data were performed in order to determine the characteristic parameters of the extrinsic and intrinsic defects. The energies and capturing cross section of deep traps were obtained by using the heating rate method. The observed changes in the Thermally Stimulated Depolarization Currents (TSDC) near the phase transition points in TlInS{sub 2}:La ferroelectric-semiconductor are interpreted as a result of self-polarization of the crystal due to the internal electric field caused by charged defects. The TSDC spectra show the depolarization peaks, which are attributed to defects of dipolar origin. These peaks provide important information on the defect structure and localized energy states in TlInS{sub 2}:La. Thermal treatments of TlInS{sub 2}:La under an external electric field, which was applied at different temperatures, allowed us to identify a peak in TSDC which was originated from La-dopant. It was established that deep energy level trap BTE43, which are active at low temperature (T ≤ 156 K) and have activation energy 0.29 eV and the capture cross section 2.2 × 10{sup −14} cm{sup 2}, corresponds to the La dopant. According to the PICTS results, the deep level trap center B5 is activated in the temperature region of incommensurate (IC) phases of TlInS{sub 2}:La, having the giant static dielectric constant due to the structural disorders. From the PICTS simulation results for B5, native deep level trap having an activation energy of 0.3 eV and the capture cross section of 1.8 × 10{sup −16} cm{sup 2} were established. A substantial amount of residual space charges is trapped by the deep level localized energy states of B5 in IC-phase. While the external electric field is applied, permanent dipoles

  15. Understanding the effect of surface/bulk defects on the photocatalytic activity of TiO2: anatase versus rutile.

    Science.gov (United States)

    Yan, Junqing; Wu, Guangjun; Guan, Naijia; Li, Landong; Li, Zhuoxin; Cao, Xingzhong

    2013-07-14

    The sole effect of surface/bulk defects of TiO2 samples on their photocatalytic activity was investigated. Nano-sized anatase and rutile TiO2 were prepared by hydrothermal method and their surface/bulk defects were adjusted simply by calcination at different temperatures, i.e. 400-700 °C. High temperature calcinations induced the growth of crystalline sizes and a decrease in the surface areas, while the crystalline phase and the exposed facets were kept unchanged during calcination, as indicated by the characterization results from XRD, Raman, nitrogen adsorption-desorption, TEM and UV-Vis spectra. The existence of surface/bulk defects in calcined TiO2 samples was confirmed by photoluminescence and XPS spectra, and the surface/bulk defect ratio was quantitatively analyzed according to positron annihilation results. The photocatalytic activity of calcined TiO2 samples was evaluated in the photocatalytic reforming of methanol and the photocatalytic oxidation of α-phenethyl alcohol. Based on the characterization and catalytic results, a direct correlation between the surface specific photocatalytic activity and the surface/bulk defect density ratio could be drawn for both anatase TiO2 and rutile TiO2. The surface defects of TiO2, i.e. oxygen vacancy clusters, could promote the separation of electron-hole pairs under irradiation, and therefore, enhance the activity during photocatalytic reaction.

  16. PERSPECTIVE: Electrical activity enhances neuronal survival and regeneration

    Science.gov (United States)

    Corredor, Raul G.; Goldberg, Jeffrey L.

    2009-10-01

    The failure of regeneration in the central nervous system (CNS) remains an enormous scientific and clinical challenge. After injury or in degenerative diseases, neurons in the adult mammalian CNS fail to regrow their axons and reconnect with their normal targets, and furthermore the neurons frequently die and are not normally replaced. While significant progress has been made in understanding the molecular basis for this lack of regenerative ability, a second approach has gained momentum: replacing lost neurons or lost connections with artificial electrical circuits that interface with the nervous system. In the visual system, gene therapy-based 'optogenetics' prostheses represent a competing technology. Now, the two approaches are converging, as recent data suggest that electrical activity itself, via the molecular signaling pathways such activity stimulates, is sufficient to induce neuronal survival and regeneration, particularly in retinal ganglion cells. Here, we review these data, discuss the effects of electrical activity on neurons' molecular signaling pathways and propose specific mechanisms by which exogenous electrical activity may be acting to enhance survival and regeneration.

  17. Electronic and ionic conductivities and point defects in ytterbium sesquioxide at high temperature

    International Nuclear Information System (INIS)

    Carpentier, J.-L.; Lebrun, A.; Perdu, F.; Tellier, P.

    1982-01-01

    From the study of complex impedance diagrams applied to a symmetric cell Pt-Yb 2 O 3 -Pt, the authors have shown the mixed character of electrical conduction within the ytterbium sesquioxide. The measurements were performed at thermodynamic equilibrium in the temperature range from 1423 to 1623 K and the partial pressure of oxygen range from 10 -12 to 1 atm. The variations of ionic and electronic conductivity as a function of Psub(O 2 ) were interpreted in terms of four different point defects in the general case of a Frenkel disorder. The relative contributions and the activation energies of conduction of these different defects were determined. (author)

  18. Effect of deep native defects on ultrasound propagation in TlInS{sub 2} layered crystal

    Energy Technology Data Exchange (ETDEWEB)

    Seyidov, MirHasan Yu., E-mail: smirhasan@gtu.edu.tr [Department of Physics, Gebze Technical University, 41400 Gebze, Kocaeli (Turkey); Institute of Physics of NAS of Azerbaijan, H. Javid Avenue, 33, AZ-1143 Baku (Azerbaijan); Suleymanov, Rauf A. [Department of Physics, Gebze Technical University, 41400 Gebze, Kocaeli (Turkey); Institute of Physics of NAS of Azerbaijan, H. Javid Avenue, 33, AZ-1143 Baku (Azerbaijan); Odrinsky, Andrei P. [Institute of Technical Acoustics, National Academy of Sciences of Belarus, Lyudnikov Avenue 13, Vitebsk 210717 (Belarus); Kırbaş, Cafer [Department of Physics, Gebze Technical University, 41400 Gebze, Kocaeli (Turkey); The Scientific and Technological Research Council of Turkey, National Metrology Institute (TUBITAK UME), PQ 54 41470 Gebze, Kocaeli (Turkey)

    2016-09-15

    We have investigated p-type semiconductor–ferroelectric TlInS{sub 2} by means of Photo-Induced Current Transient Spectroscopy (PICTS) technique in the temperature range 77–350 K for the detection of native deep defect levels in TlInS{sub 2}. Five native deep defect levels were detected and their energy levels and capture cross sections were evaluated. Focusing on these data, the influence of these defects on the longitudinal and transverse ultrasound waves propagation as well as the effect of electric field on ultrasound waves were studied at different temperatures. The acoustic properties were investigated by the pulse-echo method. The direct contribution of thermally activated charged defects to the acoustic properties of TlInS{sub 2} was demonstrated. The key role of charged native deep level defects in elastic properties of TlInS{sub 2} was shown.

  19. Using Brain Electrical Activity Mapping to Diagnose Learning Disabilities.

    Science.gov (United States)

    Torello, Michael, W.; Duffy, Frank H.

    1985-01-01

    Cognitive neuroscience assumes that measurement of brain electrical activity should relate to cognition. Brain Electrical Activity Mapping (BEAM), a non-invasive technique, is used to record changes in activity from one brain area to another and is 80 to 90 percent successful in classifying subjects as dyslexic or normal. (MT)

  20. Determining the dimension of subsurface defects by active infrared thermography – experimental research

    Directory of Open Access Journals (Sweden)

    S. Grys

    2018-03-01

    Full Text Available This paper presents research into a method of processing thermal images aimed at detecting and characterizing material defects, or non-uniformities, of the internal structure of materials. Active thermography was chosen as the NDT method. Hidden defects were revealed by analysing the temperature field of the tested material's front surface which was externally excited with heating lamps. Background removal and image segmentation were applied to the last thermogram in the sequence recorded at the end of the heating phase. The paper focuses on the quality of determining lateral dimensions of subsurface flaws in a polymethylmethacrylate slab with bottom holes drilled to imitate flaws. The following accuracy-affecting factors were taken into account: defect depth, emissivity of the inspected surface as an input, user-set parameter for the IR camera, type of filtering used to eliminate the effect of non-uniformity when heating the object surface with an external source, and global and local thresholding as a segmentation method used for defect detection and sizing.

  1. Combined Electrical, Optical and Nuclear Investigations of Impurities and Defects in II-VI Semiconductors

    CERN Multimedia

    2002-01-01

    % IS325 \\\\ \\\\ To achieve well controlled bipolar conductivity in II-VI semiconductors represents a fundamental problem in semiconductor physics. The doping problems are controversely discussed, either in terms of self compensation or of compensation and passivation by unintentionally introduced impurities. \\\\ \\\\It is the goal of our experiments at the new ISOLDE facility, to shed new light on these problems and to look for ways to circumvent it. For this aim the investigation of impurities and native defects and the interaction between each other shall be investigated. The use of radioactive ion beams opens the access to controlled site selective doping of only one sublattice via nuclear transmutation. The compensating and passivating mechanisms will be studied by combining nuclear, electrical and optical methods like Perturbed Angular Correlation~(PAC), Hall Effect~(HE), Deep Level Transient Spectroscopy~(DLTS), Photoluminescence Spectroscopy~(PL) and electron paramagnetic resonance (EPR). \\\\ \\\\We intend to ...

  2. EPR of defects in semiconductors: past, present, future

    International Nuclear Information System (INIS)

    Watkins, G.D.

    1999-01-01

    Important physical concepts learned from early EPR studies of defects in silicon are reviewed. Highlighted are the studies of shallow effective-mass-liked donors and acceptors of deep transition element impurities, and of vacancies and interstitials. It is shown that the concepts learned in silicon translate remarkable well to the corresponding defects in the other elemental and compound semiconductors. The introduction of sensitive optical and electrical detection methods and the recent progress in single defects detection insure the continued vital role of EPR in the future

  3. Defect kinetics in novel detector materials

    CERN Document Server

    MacEvoy, B C

    2000-01-01

    Silicon particle detectors will be used extensively in experiments at the CERN Large Hadron Collider, where unprecedented particle fluences will cause significant atomic displacement damage. We present a model of the evolution of defect concentrations and consequent electrical behaviour in "novel" detector materials with various oxygen and carbon impurity concentrations. The divacancy-oxygen (V/sub 2/O) defect is identified as the cause of changes in device characteristics during /sup 60/Co gamma irradiation. In the case of hadron irradiation changes in detector doping concentration (N/sub eff/) are dominated by cluster defects, in particular the divacancy (V/sub 2/), which exchange charge directly via a non-Shockley-Read- Hall mechanism. The V/sub 2/O defect also contributes to Ne/sub eff/. This defect is more copiously produced during 24 GeV/c proton irradiation than during 1 MeV neutron irradiation on account of the higher vacancy introduction rate, hence the radiation hardness of materials is more sensiti...

  4. Annealing Kinetic Model Using Fast and Slow Metastable Defects for Hydrogenated-Amorphous-Silicon-Based Solar Cells

    Directory of Open Access Journals (Sweden)

    Seung Yeop Myong

    2007-01-01

    Full Text Available The two-component kinetic model employing “fast” and “slow” metastable defects for the annealing behaviors in pin-type hydrogenated-amorphous-silicon- (a-Si:H- based solar cells is simulated using a normalized fill factor. Reported annealing data on pin-type a-Si:H-based solar cells are revisited and fitted using the model to confirm its validity. It is verified that the two-component model is suitable for fitting the various experimental phenomena. In addition, the activation energy for annealing of the solar cells depends on the definition of the recovery time. From the thermally activated and high electric field annealing behaviors, the plausible microscopic mechanism on the defect removal process is discussed.

  5. Impurity diffusion, point defect engineering, and surface/interface passivation in germanium

    KAUST Repository

    Chroneos, Alexander I.

    2012-01-26

    In recent years germanium has been emerging as a mainstream material that could have important applications in the microelectronics industry. The principle aim of this study is to review investigations of the diffusion of technologically important p- and n-type dopants as well as surface and interface passivation issues in germanium. The diffusion of impurities in germanium is interrelated to the formation of clusters whenever possible, and possibilities for point defect engineering are discussed in view of recent results. The importance of electrically active defects on the Ge surface and interfaces is addressed considering strategies to suppress them and to passivate the surfaces/interfaces, bearing in mind their importance for advanced devices. © 2012 by WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  6. Sub-surface defects detection of by using active thermography and advanced image edge detection

    International Nuclear Information System (INIS)

    Tse, Peter W.; Wang, Gaochao

    2017-01-01

    Active or pulsed thermography is a popular non-destructive testing (NDT) tool for inspecting the integrity and anomaly of industrial equipment. One of the recent research trends in using active thermography is to automate the process in detecting hidden defects. As of today, human effort has still been using to adjust the temperature intensity of the thermo camera in order to visually observe the difference in cooling rates caused by a normal target as compared to that by a sub-surface crack exists inside the target. To avoid the tedious human-visual inspection and minimize human induced error, this paper reports the design of an automatic method that is capable of detecting subsurface defects. The method used the technique of active thermography, edge detection in machine vision and smart algorithm. An infrared thermo-camera was used to capture a series of temporal pictures after slightly heating up the inspected target by flash lamps. Then the Canny edge detector was employed to automatically extract the defect related images from the captured pictures. The captured temporal pictures were preprocessed by a packet of Canny edge detector and then a smart algorithm was used to reconstruct the whole sequences of image signals. During the processes, noise and irrelevant backgrounds exist in the pictures were removed. Consequently, the contrast of the edges of defective areas had been highlighted. The designed automatic method was verified by real pipe specimens that contains sub-surface cracks. After applying such smart method, the edges of cracks can be revealed visually without the need of using manual adjustment on the setting of thermo-camera. With the help of this automatic method, the tedious process in manually adjusting the colour contract and the pixel intensity in order to reveal defects can be avoided. (paper)

  7. Understanding defect distributions in polythiophenes via comparison of regioregular and regiorandom species

    Energy Technology Data Exchange (ETDEWEB)

    Muntasir, Tanvir, E-mail: tanvir@iastate.edu, E-mail: sumitc@iastate.edu [Department of Electrical and Computer Engineering, Iowa State University, Ames, Iowa 50011 (United States); Chaudhary, Sumit, E-mail: tanvir@iastate.edu, E-mail: sumitc@iastate.edu [Department of Electrical and Computer Engineering, Iowa State University, Ames, Iowa 50011 (United States); Department of Materials Science and Engineering, Iowa State University, Ames, Iowa 50011 (United States)

    2015-11-28

    Organic photovoltaics (OPVs) are regarded as promising for solar-electric conversion with steadily improving power conversion efficiencies. For further progress, it is crucial to understand and mitigate defect states (traps) residing in the band-gap of OPV materials. In this work, using capacitance measurements, we analyzed two major bands in the density of states (DOS) energy spectra of defects in poly(3-hexylthiophene) (P3HT); regio-regular and regio-random species of P3HT were compared to elucidate the role of morphological disorder. To accurately interpret the obtained DOS profile, trap emission prefactors and activation energy were extracted from temperature dependent capacitance-frequency measurements, while doping, Fermi energy, built-in voltage, and energy levels of the defects were extracted from capacitance-voltage measurements. We identified that the lower energy band—misinterpreted in literature as a defect distribution—stems from free carrier response. The higher energy defect distribution band for regio-random P3HT was an order of magnitude higher than region-regular P3HT, thus stemming from morphological disorder. Impedance spectroscopy was also employed for further comparison of the two P3HT species.

  8. Understanding defect distributions in polythiophenes via comparison of regioregular and regiorandom species

    International Nuclear Information System (INIS)

    Muntasir, Tanvir; Chaudhary, Sumit

    2015-01-01

    Organic photovoltaics (OPVs) are regarded as promising for solar-electric conversion with steadily improving power conversion efficiencies. For further progress, it is crucial to understand and mitigate defect states (traps) residing in the band-gap of OPV materials. In this work, using capacitance measurements, we analyzed two major bands in the density of states (DOS) energy spectra of defects in poly(3-hexylthiophene) (P3HT); regio-regular and regio-random species of P3HT were compared to elucidate the role of morphological disorder. To accurately interpret the obtained DOS profile, trap emission prefactors and activation energy were extracted from temperature dependent capacitance-frequency measurements, while doping, Fermi energy, built-in voltage, and energy levels of the defects were extracted from capacitance-voltage measurements. We identified that the lower energy band—misinterpreted in literature as a defect distribution—stems from free carrier response. The higher energy defect distribution band for regio-random P3HT was an order of magnitude higher than region-regular P3HT, thus stemming from morphological disorder. Impedance spectroscopy was also employed for further comparison of the two P3HT species

  9. Ultrafast generation of skyrmionic defects with vortex beams: Printing laser profiles on magnets

    Science.gov (United States)

    Fujita, Hiroyuki; Sato, Masahiro

    2017-02-01

    Controlling electric and magnetic properties of matter by laser beams is actively explored in the broad region of condensed matter physics, including spintronics and magneto-optics. Here we theoretically propose an application of optical and electron vortex beams carrying intrinsic orbital angular momentum to chiral ferro- and antiferromagnets. We analyze the time evolution of spins in chiral magnets under irradiation of vortex beams by using the stochastic Landau-Lifshitz-Gilbert equation. We show that beam-driven nonuniform temperature leads to a class of ring-shaped magnetic defects, what we call skyrmion multiplex, as well as conventional skyrmions. We discuss the proper beam parameters and the optimal way of applying the beams for the creation of these topological defects. Our findings provide an ultrafast scheme of generating topological magnetic defects in a way applicable to both metallic and insulating chiral (anti-) ferromagnets.

  10. Defect-impurity interactions in irradiated germanium

    International Nuclear Information System (INIS)

    Cleland, J.W.; James, F.J.; Westbrook, R.D.

    1975-07-01

    Results of experiments are used to formulate a better model for the structures of lattice defects and defect-impurity complexes in irradiated n-type Ge. Single crystals were grown by the Czochralski process from P, As, or Sb-doped melts, and less than or equal to 10 15 to greater than or equal to 10 17 oxygen cm -3 was added to the furnace chamber after approximately 1 / 3 of the crystal had been solidified. Hall coefficient and resistivity measurements (at 77 0 K) were used to determine the initial donor concentration due to the dopant and clustered oxygen, and infrared absorption measurements (at 11.7 μ) were used to determine the dissociated oxygen concentration. Certain impurity and defect-impurity interactions were then investigated that occurred as a consequence of selected annealing, quenching, Li diffusion, and irradiation experiments at approximately 300 0 K with 60 Co photons, 1.5 to 2.0 MeV electrons, or thermal energy neutrons. Particular attention was given to determining the electrical role of the irradiation produced interstitial and vacancy, and to look for any evidence from electrical and optical measurements of vacancy--oxygen, lithium--oxygen, and lithium--vacancy interactions. (U.S.)

  11. Magnetoencephalography signals are influenced by skull defects.

    Science.gov (United States)

    Lau, S; Flemming, L; Haueisen, J

    2014-08-01

    Magnetoencephalography (MEG) signals had previously been hypothesized to have negligible sensitivity to skull defects. The objective is to experimentally investigate the influence of conducting skull defects on MEG and EEG signals. A miniaturized electric dipole was implanted in vivo into rabbit brains. Simultaneous recording using 64-channel EEG and 16-channel MEG was conducted, first above the intact skull and then above a skull defect. Skull defects were filled with agar gels, which had been formulated to have tissue-like homogeneous conductivities. The dipole was moved beneath the skull defects, and measurements were taken at regularly spaced points. The EEG signal amplitude increased 2-10 times, whereas the MEG signal amplitude reduced by as much as 20%. The EEG signal amplitude deviated more when the source was under the edge of the defect, whereas the MEG signal amplitude deviated more when the source was central under the defect. The change in MEG field-map topography (relative difference measure, RDM(∗)=0.15) was geometrically related to the skull defect edge. MEG and EEG signals can be substantially affected by skull defects. MEG source modeling requires realistic volume conductor head models that incorporate skull defects. Copyright © 2013 International Federation of Clinical Neurophysiology. Published by Elsevier Ireland Ltd. All rights reserved.

  12. Research activities of Sumitomo Electric

    Energy Technology Data Exchange (ETDEWEB)

    1963-07-01

    Research activities of Sumitomo Electric Co. are described and illustrated with numerous photographs. The ehv laboratory is provided with high voltage and heavy current testing facilities such as 1000 kV direct current testing equipment, and a 3000-kV impulse voltage generator.

  13. Strain and Defect Engineering for Tailored Electrical Properties in Perovskite Oxide Thin Films and Superlattices

    Science.gov (United States)

    Hsing, Greg Hsiang-Chun

    Functional complex-oxides display a wide spectrum of physical properties, including ferromagnetism, piezoelectricity, ferroelectricity, photocatalytic and metal-insulating transition (MIT) behavior. Within this family, oxides with a perovskite structure have been widely studied, especially in the form of thin films and superlattices (heterostructures), which are strategically and industrially important because they offer a wide range of opportunities for electronic, piezoelectric and sensor applications. The first part of my thesis focuses on understanding and tuning of the built-in electric field found in PbTiO3/SrTiO3 (PTO/STO) ferroelectric superlattices and other ferroelectric films. The artificial layering in ferroelectric superlattices is a potential source of polarization asymmetry, where one polarization state is preferred over another. One manifestation of this asymmetry is a built-in electric field associated with shifted polarization hysteresis. Using off-axis RF-magnetron sputtering, we prepared several compositions of PTO/STO superlattice thin films; and for comparison PbTiO3/SrRuO 3 (PTO/SRO) superlattices, which have an additional intrinsic compositional asymmetry at the interface. Both theoretical modeling and experiments indicate that the layer-by-layer superlattice structure aligns the Pb-O vacancy defect dipoles in the c direction which contributes significantly to the built-in electric field; however the preferred polarization direction is different between the PTO/STO and PTO/SRO interface. By designing a hybrid superlattice that combines PTO/STO and PTO/SRO superlattices, we show the built-in electric field can be tuned to zero by changing the composition of the combo-superlattice. The second part of my thesis focuses on the epitaxial growth of SrCrO 3 (SCO) films. The inconsistent reports regarding its electrical and magnetic properties through the years stem from the compositionally and structurally ill-defined polycrystalline samples, but

  14. Electrically Rotatable Polarizer Using One-Dimensional Photonic Crystal with a Nematic Liquid Crystal Defect Layer

    Directory of Open Access Journals (Sweden)

    Ryotaro Ozaki

    2015-09-01

    Full Text Available Polarization characteristics of defect mode peaks in a one-dimensional (1D photonic crystal (PC with a nematic liquid crystal (NLC defect layer have been investigated. Two different polarized defect modes are observed in a stop band. One group of defect modes is polarized along the long molecular axis of the NLC, whereas another group is polarized along its short axis. Polarizations of the defect modes can be tuned by field-induced in-plane reorientation of the NLC in the defect layer. The polarization properties of the 1D PC with the NLC defect layer is also investigated by the finite difference time domain (FDTD simulation.

  15. Combined effect of oxygen deficient point defects and Ni doping in radio frequency magnetron sputtering deposited ZnO thin films

    Energy Technology Data Exchange (ETDEWEB)

    Saha, B., E-mail: biswajit.physics@gmail.com [Thin Film and Nano Science Laboratory, Department of Physics, Jadavpur University, 700 032 Kolkata (India); Department of Physics, National Institute of Technology Agartala, Jirania 799046, Tripura (India); Das, N.S.; Chattopadhyay, K.K. [Thin Film and Nano Science Laboratory, Department of Physics, Jadavpur University, 700 032 Kolkata (India)

    2014-07-01

    Ni doped ZnO thin films with oxygen deficiency have been synthesized on glass substrates by radio frequency magnetron sputtering technique using argon plasma. The combined effect of point defects generated due to oxygen vacancies and Ni doping on the optical and electrical properties of ZnO thin films has been studied in this work. Ni doping concentrations were varied and the structural, optical and electrical properties of the films were studied as a function of doping concentrations. The films were characterized with X-ray diffractometer, UV–Vis–NIR spectrophotometer, X-ray photoelectron spectroscopy, atomic force microscopy and electrical conductivity measurements. Oxygen deficient point defects (Schottky defects) made the ZnO thin film highly conducting while incorporation of Ni dopant made it more functional regarding their electrical and optical properties. The films were found to have tunable electrical conductivity with Ni doping concentrations. - Highlights: • ZnO thin films prepared by radio frequency magnetron sputtering technique • Synthesis process was stimulated to introduce Schottky-type point defects. • Point defects and external doping of Ni made ZnO thin films more functional. • Point defect induced high electrical conductivity in ZnO thin film. • Significant shift in optical bandgap observed in ZnO with Ni doping concentrations.

  16. Extended defects and hydrogen interactions in ion implanted silicon

    Science.gov (United States)

    Rangan, Sanjay

    The structural and electrical properties of extended defects generated because of ion implantation and the interaction of hydrogen with these defects have been studied in this work. Two distinct themes have been studied, the first where defects are a detrimental and the second where they are useful. In the first scenario, transient enhanced diffusion of boron has been studied and correlated with defect evolution studies due to silicon and argon ion implants. Spreading resistance profiles (SRP) correlated with deep level transient spectroscopy (DLTS) measurements, reveal that a low anneal temperatures (TED at low anneal temperatures (550°C, the effect of hydrogen is lost, due to its out-diffusion. Moreover, due to catastrophic out-diffusion of hydrogen, additional damage is created resulting in deeper junctions in hydrogenated samples, compared to the non-hydrogenated ones. Comparing defect evolution due to Si and Ar ion implants at different anneal temperatures, while the type of defects is the same in the two cases, their (defect) dissolution occurs at lower anneal temperatures (˜850°C) for Si implants. Dissolution for Ar implants seems to occur at higher anneal temperatures. The difference has been attributed to the increased number of vacancies created by Ar to that of silicon implant. In second aspect, nano-cavity formation due to vacancy agglomeration has been studied by helium ion implantation and furnace anneal, where the effect of He dose, implant energy and anneal time have been processing parameters that have been varied. Cavities are formed only when the localized concentration of He is greater than 3 x 1020 cm-3. While at high implant doses, a continuous cavity layer is formed, at low implant doses a discontinuous layer is observed. The formation of cavities at low doses has been observed for the first time. Variation of anneal times reveal that cavities are initially facetted (for short anneal times) and tend to become spherical when annealed for

  17. The genetic defect in Cockayne syndrome is associated with a defect in repair of UV-induced DNA damage in transcriptionally active DNA

    International Nuclear Information System (INIS)

    Venema, J.; Mullenders, L.H.; Natarajan, A.T.; van Zeeland, A.A.; Mayne, L.V.

    1990-01-01

    Cells from patients with Cockayne syndrome (CS) are hypersensitive to UV-irradiation but have an apparently normal ability to remove pyrimidine dimers from the genome overall. We have measured the repair of pyrimidine dimers in defined DNA sequences in three normal and two CS cell strains. When compared to a nontranscribed locus, transcriptionally active genes were preferentially repaired in all three normal cell strains. There was no significant variation in levels of repair between various normal individuals or between two constitutively expressed genes, indicating that preferential repair may be a consistent feature of constitutively expressed genes in human cells. Neither CS strain, from independent complementation groups, was able to repair transcriptionally active DNA with a similar rate and to the same extent as normal cells, indicating that the genetic defect in CS lies in the pathway for repair of transcriptionally active DNA. These results have implications for understanding the pleiotropic clinical effects associated with disorders having defects in the repair of DNA damage. In particular, neurodegeneration appears to be associated with the loss of preferential repair of active genes and is not simply correlated with reduced levels of overall repair

  18. Appliances facilitating everyday life - electricity use derived from daily activities

    Energy Technology Data Exchange (ETDEWEB)

    Ellegaard, Kajsa (Dept of Thematic Studies, Linkoeping Univ. (Sweden)), e-mail: kajsa.ellegard@liu.se; Widen, Joakim (Dept of Engineering Sciences, Uppsala Univ. (Sweden)); Vrotsou, Katerina (Dept of Science and Technology, Linkoeping Univ. (Sweden))

    2011-06-15

    The purpose of this paper is to present how, using a visualization method, electricity use can be derived from the everyday activity patterns of household members. Target groups are, on the one hand, professionals in the energy sector and energy advisors who need more knowledge about household energy use, and, on the other hand, household members wanting to reduce the energy use by revealing their own habits and thereby finding out how changed activity performance may influence electricity use. The focus is on the relation between utilizing electric appliances to perform everyday life activities and the use of electricity. The visualization method is based on the time-geographic approach developed by Haegerstrand and includes a model that estimates appliance electricity use from household members' activities. Focus, in this paper, is put on some basic activities performed to satisfy daily life needs: cooking and use of information, communication and entertainment devices. These activities appear frequently in the everyday life of households, even though not all household members perform them all. The method is applied on a data material comprising time-diaries written by 463 individuals (aged 10 to 85+) in 179 households in different parts of Sweden. The visualization method reveals when and for how long activities that claim electric appliances are performed by which individual(s). It also shows electricity load curves generated from the use of appliances at different levels, such as individual, household and group or population levels. At household level the method can reveal which household members are the main users of electricity, i.e. the division of labour between household members. Thereby it also informs about whom could be approached by energy companies and energy advisors in information campaigns. The main result of the study is that systematic differences in activity patterns in subgroups of a population can be identified (e.g. men and women) but

  19. Theoretical analysis of the influence of flexoelectric effect on the defect site in nematic inversion walls

    International Nuclear Information System (INIS)

    Zheng Gui-Li; Xuan Li; Zhang Hui; Ye Wen-Jiang; Zhang Zhi-Dong; Song Hong-Wei

    2016-01-01

    Based on the experimental phenomena of flexoelectric response at defect sites in nematic inversion walls conducted by Kumar et al., we gave the theoretical analysis using the Frank elastic theory. When a direct-current electric field normal to the plane of the substrate is applied to the parallel aligned nematic liquid crystal cell with weak anchoring, the rotation of ±1 defects in the narrow inversion walls can be exhibited. The free energy of liquid crystal molecules around the +1 and –1 defect sites in the nematic inversion walls under the electric field was formulated and the electric-field-driven structural changes at the defect site characterized by polar and azimuthal angles of the local director were simulated. The results reveal that the deviation of azimuthal angle induced by flexoelectric effect are consistent with the switching of extinction brushes at the +1 and −1 defects obtained in the experiment conducted by Kumar et al. (paper)

  20. Electrical conductivity measurement and thermogravimetric study of chromium-doped uranium dioxide

    International Nuclear Information System (INIS)

    Matsui, Tsuneo; Naito, Keiji

    1986-01-01

    The electrical conductivity and nonstoichiometric composition of (Usub(1-y)Crsub(y))Osub(2+x) (y=0.001 and 0.05) were measured in the range 1173 -17 2 ) -2 Pa by the four inserted wires method and thermogravimetry, respectively. The electrical conductivities of (Usub(1-y)Crsub(y))Osub(2+x) (y=0.01 and 0.05) were about one-order lower than that of UOsub(2+x), probably due to the presence of the chromium ion as an electron donor. The activation energies of (Usub(0.99)Crsub(0.01))Osub(2+x) and (Usub(0.95)Crsub(0.05))Osub(2+x) for the extrinsic conduction in the low oxygen partial pressure region were calculated to be 24.7+-1.3 and 25.9+-1.0 kJ.mol -1 , respectively from the Arrhenius plots of the electrical conductivities. These small values of the activation energy of (Usub(1-y)Crsub(y))Osub(2+x) may suggest the presence of the hopping mechanism for hole conduction, similarly to the case of UOsub(2+x). From the oxygen partial pressure dependences of both the electrical conductivity and the deviation x in (Usub(1-y)Crsub(y))Osub(2+x), the defect structure was discussed with the complex defect model consisting of oxygen vacancies and two kinds of interstitial oxygens. (orig.)

  1. Ab-initio modelling of thermodynamics and kinetics of point defects in indium oxide

    International Nuclear Information System (INIS)

    Agoston, Peter; Klein, Andreas; Albe, Karsten; Erhart, Paul

    2008-01-01

    The electrical and optical properties of indium oxide films strongly vary with the processing parameters. Especially the oxygen partial pressure and temperature determine properties like electrical conductivity, composition and transparency. Since this material owes its remarkable properties like the intrinsic n-type conductivity to its defect chemistry, it is important to understand both, the equilibrium defect thermodynamics and kinetics of the intrinsic point defects. In this contribution we present a defect model based on DFT total energy calculations using the GGA+U method. Further, the nudged elastic band method is employed in order to obtain a set of migration barriers for each defect species. Due to the complicated crystal structure of indium oxide a Kinetic Monte-Carlo algorithm was implemented, which allows to determine diffusion coefficients. The bulk tracer diffusion constant is predicted as a function of oxygen partial pressure, Fermi level and temperature for the pure material

  2. Utilization of shear stress for determination of activation energy of the defects created by neutron irradiation

    International Nuclear Information System (INIS)

    Gonzalez, Hector C.; Miralles, Monica

    1996-01-01

    This paper describes an experimental technique used for the determination thermodynamical parameters such as activation energy using the thermal annealing of increments of Critical resolved Shear Stress of the defects created by neutron irradiation at 77 K. The doses chosen for this work was 3.1 x 10 16 n/cm 2 since the defects are stable to plastic deformation and the cascades of atomic displacements do not overlap. Specimens without any prior deformation were used allowing then the single addition of the initial stress to that due to the created defects. (author)

  3. Modelling ionising radiation induced defect generation in bipolar oxides with gated diodes

    International Nuclear Information System (INIS)

    Barnaby, H.J.; Cirba, C.; Schrimpf, R.D.; Kosier, St.; Fouillat, P.; Montagner, X.

    1999-01-01

    Radiation-induced oxide defects that degrade electrical characteristics of bipolar junction transistor (BJTs) can be measured with the use of gated diodes. The buildup of defects and their effect on device radiation response are modeled with computer simulation. (authors)

  4. Power spectrum analysis for defect screening in integrated circuit devices

    Science.gov (United States)

    Tangyunyong, Paiboon; Cole Jr., Edward I.; Stein, David J.

    2011-12-01

    A device sample is screened for defects using its power spectrum in response to a dynamic stimulus. The device sample receives a time-varying electrical signal. The power spectrum of the device sample is measured at one of the pins of the device sample. A defect in the device sample can be identified based on results of comparing the power spectrum with one or more power spectra of the device that have a known defect status.

  5. Effect of metal contamination on recombination properties of extended defects in multicrystalline Si

    Energy Technology Data Exchange (ETDEWEB)

    Feklisova, O.V.; Yakimov, E.B. [Institute of Microelectronics Technology, RAS, Chernogolovka 142432 (Russian Federation); Yu, X.; Yang, D. [State Key Lab of Silicon Materials, Zhejiang University, Hangzhou 310027 (China)

    2012-10-15

    The effect of iron and copper contamination on the recombination properties of extended defects in multicrystalline Si is investigated by the Electron Beam Induced Current (EBIC) method. Plastically deformed Si samples containing dislocations and dislocation trails are also studied for a comparison. It is shown that Fe contamination leads to an essential increase of the EBIC contrast of electrically active grain boundaries and dislocation trails. The EBIC contrast of deformation induced dislocations also increases after iron diffusion while the recombination activity of grown-in dislocations in multicrystalline Si does not practically change after such treatment. Cu contamination also leads to an essential increase of the EBIC contrast of electrically active grain boundaries and dislocation trails. But dislocation contrast in both plastically deformed Si and multicrystalline Si does not practically increase after Cu contamination. (copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  6. Electrical Activity in Martian Dust Storms

    Science.gov (United States)

    Majid, W.; Arabshahi, S.; Kocz, J.

    2016-12-01

    Dust storms on Mars are predicted to be capable of producing electrostatic fields and discharges, even larger than those in dust storms on Earth. Such electrical activity poses serious risks to any Human exploration of the planet and the lack of sufficient data to characterize any such activity has been identified by NASA's MEPAG as a key human safety knowledge gap. There are three key elements in the characterization of Martian electrostatic discharges: dependence on Martian environmental conditions, frequency of occurrence, and the strength of the generated electric fields. We will describe a recently deployed detection engine using NASA's Deep Space Network (DSN) to carry out a long term monitoring campaign to search for and characterize the entire Mars hemisphere for powerful discharges during routine tracking of spacecraft at Mars on an entirely non-interfering basis. The resulting knowledge of Mars electrical activity would allow NASA to plan risk mitigation measures to ensure human safety during Mars exploration. In addition, these measurements will also allow us to place limits on presence of oxidants such as H2O2 that may be produced by such discharges, providing another measurement point for models describing Martian atmospheric chemistry and habitability. Because of the continuous Mars telecommunication needs of NASA's Mars-based assets, the DSN is the only instrument in the world that combines long term, high cadence, observing opportunities with large sensitive telescopes, making it a unique asset worldwide in searching for and characterizing electrostatic activity at Mars from the ground.

  7. Neurocortical electrical activity tomography in chronic schizophrenics

    Directory of Open Access Journals (Sweden)

    Veiga Heloisa

    2003-01-01

    Full Text Available Functional imaging of brain electrical activity was performed in 25 chronic medicated schizophrenics and 40 controls, analyzing the classical frequency bands (delta, theta, alpha, and beta of 19-channel EEG during resting state to identify brain regions with deviant activity of different functional significances, using LORETA (Low Resolution Tomography and SPM99 (Statistical Parametric Mapping. Patients differed from controls due to an excess of slow activity comprising delta + theta frequency bands (inhibitory pattern located at the right middle frontal gyrus, right inferior frontal gyrus, and right insula, as well as at the bilateral anterior cingulum with a left preponderance. The high temporal resolution of EEG enables the specification of the deviations not only as an excess or a deficit of brain electrical activity, but also as inhibitory (delta, theta, normal (alpha, and excitatory (beta activities. These deviations point out to an impaired functional brain state consisting of inhibited frontal and prefrontal areas that may result in inadequate treatment of externally or internally generated information.

  8. Cranial Defects and Cranioplasty. Part 8. Chapter 194,

    Science.gov (United States)

    1984-01-01

    scalp incision is outlined on the skin outside the area of the defect and infiltrated with a local anesthetic containing adrenalin. (c) Margins of the...plate to repair cleft palates in the first instance of an alloplastic material to repair a defect. J. van 14eekren in 1670 is credited with the first...osteomyelitis, infected skull flaps), aseptic necrosis of skull flaps, radionecrosis and electrical burns of skull, con- genital absences of skull

  9. Electrical conductivity of (La,Sr)MnO3

    International Nuclear Information System (INIS)

    Nowotny, J.; Rekas, M.; Sorrell, C.C.

    1998-01-01

    Defect disorder model for undoped and Sr-doped LaMnO 3 was derived from non-stoichiometry data reported in literature. This model is checked against the electrical conductivity data. The regimes corresponding to oxygen deficit and oxygen excess will be discussed. A good agreement between the random defect model and experimental data of the electrical conductivity was revealed. Copyright (1998) Australasian Ceramic Society

  10. Electrical characterization of defects introduced in n-Si during electron beam deposition of Pt

    Energy Technology Data Exchange (ETDEWEB)

    Auret, F.D.; Coelho, S.M.M.; Nel, J.M.; Meyer, W.E. [Physics Department, University of Pretoria, Pretoria (South Africa)

    2012-10-15

    We have used deep level transient spectroscopy (DLTS) and high resolution DLTS to characterize the defects introduced in epitaxially grown n-type, P-doped, Si during electron beam deposition (EBD) of Pt for Schottky contact formation. The identity of some of these defects could be established by comparing their properties to those of well-known defects introduced by high energy electron irradiation of the same material. The most prominent EBD-induced defects thus identified were the E-center (VP center), the A-center (VO center), interstitial carbon (C{sub i}), and the interstitial carbon-substitutional carbon (C{sub i}C{sub s}) pair. EBD also introduced some defects that were not observed after high energy electron irradiation. DLTS depth profiling revealed that the main defects, VO and VP, could be detected up to 0.5 {mu}m below the metal-Si interface. Shielding the sample from particles originating in the region of the electron beam significantly reduced defect introduction and resulted in Schottky contacts with improved rectification properties. Finally, we have found that exposing the sample to EBD conditions, without actually depositing metal, introduced a different set of electron traps, not introduced by the EBD process. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  11. Effect of high current density to defect generation of blue LED and its characterization with transmission electron microscope

    Science.gov (United States)

    Gunawan, R.; Sugiarti, E.; Isnaeni; Purawiardi, R. I.; Widodo, H.; Muslimin, A. N.; Yuliasari; Ronaldus, C. E.; Prastomo, N.; Hastuty, S.

    2018-03-01

    The optical, electrical and structural characteristics of InGaN-based blue light-emitting diodes (LEDs) were investigated to identify the degradation of LED before and after current injection. The sample was injected by high current of 200 A/cm2 for 5 and 20 minutes. It was observed that injection of current shifts light intensity and wavelength characteristics that indicated defect generation. Transmission Electron Microscopy (TEM) characterization was carried out in order to clarify the structure degradation caused by defect in active layer which consisted of 14 quantum well with thickness of about 5 nm and confined with barrier layer with thickness of about 12 nm. TEM results showed pre-existing defect in LED before injection with high current. Furthermore, discontinue and edge defect was found in dark spot region of LED after injection with high current.

  12. Low-temperature annealing of radiation defects in electron-irradiated gallium phosphide

    International Nuclear Information System (INIS)

    Kolb, A.A.; Megela, I.G.; Buturlakin, A.P.; Goyer, D.B.

    1990-01-01

    The isochronal annealing of radiation defects in high-energy electron irradiated n-GaP monocrystals within the 77 to 300 K range has been investigated by optical and electrical techniques. The changes in conductance and charge carrier mobility as functions of annealing temperature as well as the variation of optical absorption spectra of GaP under irradiation and annealing provide evidence that most of radiation defects are likely secondary complexes of defects

  13. Study of point defects in pure iron by means of electrical resistivity

    International Nuclear Information System (INIS)

    Minier-Cassayre, C.

    1965-04-01

    In the first part of this work, after having reviewed the production, observation and the annealing of point defects In metals, we resume the present state of research. In the second part, we explain the techniques we have employed to produce point defects at low temperatures: irradiation, quenching and cold-work; and go on to the study of their migration and annealing. The experimental results obtained for pure iron and for iron containing certain impurities are presented in the third part. In the fourth part we suggest a model which explains the different stages of annealing observed, and their properties. We then compare the energies of interaction between point defects with the values deduced from the theory of elasticity. (author) [fr

  14. Recombination via point defects and their complexes in solar silicon

    Energy Technology Data Exchange (ETDEWEB)

    Peaker, A.R.; Markevich, V.P.; Hamilton, B. [Photon Science Institute, University of Manchester, Manchester M13 9PL (United Kingdom); Parada, G.; Dudas, A.; Pap, A. [Semilab, 2 Prielle Kornelia Str, 1117 Budapest (Hungary); Don, E. [Semimetrics, PO Box 36, Kings Langley, Herts WD4 9WB (United Kingdom); Lim, B.; Schmidt, J. [Institute for Solar Energy Research (ISFH) Hamlen, 31860 Emmerthal (Germany); Yu, L.; Yoon, Y.; Rozgonyi, G. [Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695-7907 (United States)

    2012-10-15

    Electronic grade Czochralski and float zone silicon in the as grown state have a very low concentration of recombination generation centers (typically <10{sup 10} cm{sup -3}). Consequently, in integrated circuit technologies using such material, electrically active inadvertent impurities and structural defects are rarely detectable. The quest for cheap photovoltaic cells has led to the use of less pure silicon, multi-crystalline material, and low cost processing for solar applications. Cells made in this way have significant extrinsic recombination mechanisms. In this paper we review recombination involving defects and impurities in single crystal and in multi-crystalline solar silicon. Our main techniques for this work are recombination lifetime mapping measurements using microwave detected photoconductivity decay and variants of deep level transient spectroscopy (DLTS). In particular, we use Laplace DLTS to distinguish between isolated point defects, small precipitate complexes and decorated extended defects. We compare the behavior of some common metallic contaminants in solar silicon in relation to their effect on carrier lifetime and cell efficiency. Finally, we consider the role of hydrogen passivation in relation to transition metal contaminants, grain boundaries and dislocations. We conclude that recombination via point defects can be significant but in most multi-crystalline material the dominant recombination path is via decorated dislocation clusters within grains with little contribution to the overall recombination from grain boundaries. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  15. A histopathologic investigation on the effects of electrical stimulation on periodontal tissue regeneration in experimental bony defects in dogs.

    Science.gov (United States)

    Kaynak, Deniz; Meffert, Roland; Günhan, Meral; Günhan, Omer

    2005-12-01

    One endpoint of periodontal therapy is to regenerate the structure lost due to periodontal disease. In the periodontium, gingival epithelium is regenerated by oral epithelium. Underlying connective tissue, periodontal ligament, bone, and cementum are derived from connective tissue. Primitive connective tissue cells may develop into osteoblasts and cementoblasts, which form bone and cementum. Several procedural advances may support these regenerations; however, the regeneration of alveolar bone does not always occur. Therefore, bone stimulating factors are a main topic for periodontal reconstructive research. The present study was designed to examine histopathologically whether the application of an electrical field could demonstrate enhanced alveolar and cementum regeneration and modify tissue factors. Seven beagle dogs were used for this experiment. Mandibular left and right sides served as control and experimental sides, respectively, and 4-walled intrabony defects were created bilaterally between the third and fourth premolars. The experimental side was treated with a capacitively coupled electrical field (CCEF) (sinusoidal wave, 60 kHz, and 5 V peak-to-peak), applied for 14 hours per day. The following measurements were performed on the microphotographs: 1) the distance from the cemento-enamel junction to the apical notch (CEJ-AN) and from the crest of newly formed bone (alveolar ridge) to the apical notch (AR-AN); 2) the thickness of new cementum in the apical notch region; and 3) the length of junctional epithelium. The following histopathologic parameters were assessed by a semiquantitative subjective method: 1) inflammatory cell infiltration (ICI); 2) cellular activity of the periodontal ligament; 3) number and morphology of osteoclasts; 4) resorption lacunae; and 5) osteoblastic activity. The results showed that the quantity of new bone fill and the mean value of the thickness of the cementum were significantly higher for the experimental side (P 0

  16. Relationship between Photocatalytic Activity and Ti{sup 3+} Defects in Acid-Leached Titanium Dioxide / Hydroxyapatite Composite

    Energy Technology Data Exchange (ETDEWEB)

    Ono, Y; Rachi, T; Okuda, T; Yokouchi, M; Kamimoto, Y [Mechanical and Material Engineering Division, Kanagawa Industrial Technology Center, 705-1 Shimo-imaizumi, Ebina, Kanagawa 243-0435 (Japan); Nakajima, A [Department of Metallurgy and Ceramics Science, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152-8552 (Japan); Okada, K, E-mail: ono-y@kanagawa-iri.go.jp [Materials and Structures Laboratory, Tokyo Institute of Technology, 4259 Nagatsuda, Midori-ku, Yokohama 226-8503 (Japan)

    2011-10-29

    Effect of Ti{sup 3+} defect density on the photocatalytic activity was investigated using electron spin resonance (ESR) spectroscopy under UV irradiation at 103K. The Ti{sup 3+} signal intensity decreased with increasing heating temperature for the TiO{sub 2} powders prepared by hydroxyapatite (HAp) precipitation, heating and acid leaching process. The Ti{sup 3+} defect density of the TiO{sub 2} powder heat-treated at 700 deg. C was found to be about half that of the starting material, P25, without anatase-to-rutile phase transformation based on the results of X-ray diffraction. The photocatalytic activity of the TiO{sub 2} powder determined from the change of methylene blue concentration under UV irradiation became higher with decreasing of the Ti{sup 3+} defects without a significant change in the anatase ratio and specific surface area during the heat treatment.

  17. Defects and properties of cadmium oxide based transparent conductors

    International Nuclear Information System (INIS)

    Yu, Kin Man; Detert, D. M.; Dubon, O. D.; Chen, Guibin; Zhu, Wei; Liu, Chaoping; Grankowska, S.; Hsu, L.; Walukiewicz, Wladek

    2016-01-01

    Transparent conductors play an increasingly important role in a number of semiconductor technologies. This paper reports on the defects and properties of Cadmium Oxide, a transparent conducting oxide which can be potentially used for full spectrum photovoltaics. We carried out a systematic investigation on the effects of defects in CdO thin films undoped and intentionally doped with In and Ga under different deposition and annealing conditions. We found that at low growth temperatures (<200 °C), sputter deposition tends to trap both oxygen vacancies and compensating defects in the CdO film resulting in materials with high electron concentration of ∼2 × 10 20 /cm 3 and mobility in the range of 40–100 cm 2 /V s. Thermal annealing experiments in different ambients revealed that the dominating defects in sputtered CdO films are oxygen vacancies. Oxygen rich CdO films grown by sputtering with increasing O 2 partial pressure in the sputter gas mixture results in films with resistivity from ∼4 × 10 −4 to >1 Ω cm due to incorporation of excess O in the form of O-related acceptor defects, likely to be O interstitials. Intentional doping with In and Ga donors leads to an increase of both the electron concentration and the mobility. With proper doping CdO films with electron concentration of more than 10 21  cm −3 and electron mobility higher than 120 cm 2 /V s can be achieved. Thermal annealing of doped CdO films in N 2 ambient can further improve the electrical properties by removing native acceptors and improving film crystallinity. Furthermore, the unique doping behavior and electrical properties of CdO were explored via simulations based on the amphoteric defect model. A comparison of the calculations and experimental results show that the formation energy of native donors and acceptors at the Fermi stabilization energy is ∼1 eV and that the mobility of sputtered deposited CdO is limited by a background acceptor concentration of

  18. Defects and properties of cadmium oxide based transparent conductors

    Energy Technology Data Exchange (ETDEWEB)

    Yu, Kin Man, E-mail: kinmanyu@cityu.edu.hk [Department of Physics and Materials Science, City University of Hong Kong, Kowloon (Hong Kong); Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States); Detert, D. M.; Dubon, O. D. [Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States); Department of Materials Science and Engineering, University of California, Berkeley, California 94720 (United States); Chen, Guibin [Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States); Physics Department and Jiangsu Key Laboratory for Chemistry of Low Dimensional Materials, Huaiyin Normal University, Jiangsu 223300 (China); Zhu, Wei [Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States); Department of Physics and The Center for Physical Experiments, University of Science and Technology of China, Hefei, Anhui 230026 (China); Liu, Chaoping [Department of Physics and Materials Science, City University of Hong Kong, Kowloon (Hong Kong); Grankowska, S. [Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States); Institute of Experimental Physics (IEP UW), Warsaw University, Warsaw (Poland); Hsu, L. [Department of Postsecondary Teaching and Learning, University of Minnesota, Minneapolis, Minnesota 55455 (United States); Walukiewicz, Wladek [Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States)

    2016-05-14

    Transparent conductors play an increasingly important role in a number of semiconductor technologies. This paper reports on the defects and properties of Cadmium Oxide, a transparent conducting oxide which can be potentially used for full spectrum photovoltaics. We carried out a systematic investigation on the effects of defects in CdO thin films undoped and intentionally doped with In and Ga under different deposition and annealing conditions. We found that at low growth temperatures (<200 °C), sputter deposition tends to trap both oxygen vacancies and compensating defects in the CdO film resulting in materials with high electron concentration of ∼2 × 10{sup 20}/cm{sup 3} and mobility in the range of 40–100 cm{sup 2}/V s. Thermal annealing experiments in different ambients revealed that the dominating defects in sputtered CdO films are oxygen vacancies. Oxygen rich CdO films grown by sputtering with increasing O{sub 2} partial pressure in the sputter gas mixture results in films with resistivity from ∼4 × 10{sup −4} to >1 Ω cm due to incorporation of excess O in the form of O-related acceptor defects, likely to be O interstitials. Intentional doping with In and Ga donors leads to an increase of both the electron concentration and the mobility. With proper doping CdO films with electron concentration of more than 10{sup 21 }cm{sup −3} and electron mobility higher than 120 cm{sup 2}/V s can be achieved. Thermal annealing of doped CdO films in N{sub 2} ambient can further improve the electrical properties by removing native acceptors and improving film crystallinity. Furthermore, the unique doping behavior and electrical properties of CdO were explored via simulations based on the amphoteric defect model. A comparison of the calculations and experimental results show that the formation energy of native donors and acceptors at the Fermi stabilization energy is ∼1 eV and that the mobility of sputtered deposited CdO is limited

  19. Intelligent Electric Power Systems with Active-Adaptive Electric Networks: Challenges for Simulation Tools

    Directory of Open Access Journals (Sweden)

    Ufa Ruslan A.

    2015-01-01

    Full Text Available The motivation of the presented research is based on the needs for development of new methods and tools for adequate simulation of intelligent electric power systems with active-adaptive electric networks (IES including Flexible Alternating Current Transmission System (FACTS devices. The key requirements for the simulation were formed. The presented analysis of simulation results of IES confirms the need to use a hybrid modelling approach.

  20. Defects controlling electrical and optical properties of electrodeposited Bi doped Cu2O

    Science.gov (United States)

    Brandt, Iuri S.; Tumelero, Milton A.; Martins, Cesar A.; Plá Cid, Cristiani C.; Faccio, Ricardo; Pasa, André A.

    2018-04-01

    Doping leading to low electrical resistivity in electrodeposited thin films of Cu2O is a straightforward requirement for the construction of efficient electronic and energy devices. Here, Bi (7 at. %) doped Cu2O layers were deposited electrochemically onto Si(100) single-crystal substrates from aqueous solutions containing bismuth nitrate and cupric sulfate. X-ray photoelectron spectroscopy shows that Bi ions in a Cu2O lattice have an oxidation valence of 3+ and glancing angle X-ray diffraction measurements indicated no presence of secondary phases. The reduction in the electrical resistivity from undoped to Bi-doped Cu2O is of 4 and 2 orders of magnitude for electrical measurements at 230 and 300 K, respectively. From variations in the lattice parameter and the refractive index, the electrical resistivity decrease is addressed to an increase in the density of Cu vacancies. Density functional theory (DFT) calculations supported the experimental findings. The DFT results showed that in a 6% Bi doped Cu2O cell, the formation of Cu vacancies is more favorable than in an undoped Cu2O one. Moreover, from DFT data was observed that there is an increase (decrease) of the Cu2O band gap (activation energy) for 6% Bi doping, which is consistent with the experimental results.

  1. Point defects in nickel

    International Nuclear Information System (INIS)

    Peretto, P.

    1969-01-01

    The defects in electron irradiated nickel (20 deg. K) or neutron irradiated nickel (28 deg. K) are studied by simultaneous analysis using the magnetic after-effect, electron microscopy and electrical resistivity recovery. We use zone refined nickel (99.999 per cent) which, for some experiments, is alloyed with a small amount of iron (for example 0.1 per cent Fe). The temperature dependant electrical recovery may be divided in four stages. The sub-stages I B (31 deg. K), I C (42 deg. K), I D (from to 57 deg. K) and I E (62 deg. K) of stage I are due to the disappearance of single interstitials into vacancies. The interstitial defect has a split configuration with a migration energy of about 0.15 eV. In the close pair which disappears in stage I B the interstitial is found to be in a 3. neighbour position whilst in stage I D it is near the direction from the vacancy. In stage I E there is no longer any interaction between the interstitial and the vacancy. The stage II is due to more complicated interstitial defects: di-interstitials for stage II B (84 deg. K) and larger and larger interstitial loops for the following sub-stages. The loops may be seen by electron microscopy. Impurities can play the role of nucleation centers for the loops. Stages III A (370 deg. K) and III B (376 deg. K) are due to two types of di-vacancies. During stage IV (410 deg. K) the single vacancies migrate. Vacancy type loops and interstitial type loops grow concurrently and disappear at about 800 deg. K as observed by electron microscopy. (author) [fr

  2. Defect-property correlations in garnet crystals. III. The electrical conductivity and defect structure of luminescent nickel-doped yttrium aluminum garnet

    International Nuclear Information System (INIS)

    Rotman, S.R.; Tuller, H.L.

    1987-01-01

    The conduction mechanisms in nickel-doped yttrium aluminum garnet (Ni:YAG) have been studied as a function of temperature and partial pressue of oxygen. ac conductivity and ionic transference measurements show that Ni:YAG is a mixed ionic-electronic conductor with an ionic mobility characterized by an activation energy of 2.0--2.2 eV. The reduction of Ni +3 to Ni +2 causes an increase in the oxygen vacancy concentration and a concurrent rise in the magnitude of the ionic conductivity. Codoping with zirconium, on the other hand, fixes the nickel in the divalent state, increases the n-type conductivity, and lowers the degree of ionic conductivity. A defect model is presented which is consistent with all of these observations

  3. Formation of defects in tellurium at various levels of gravitation

    International Nuclear Information System (INIS)

    Parfen'ev, R.V.; Farbshtejn, I.I.; Shul'pina, I.L.; Yakimov, S.V.; Shalimov, V.P.; Turchaninov, A.M.

    2002-01-01

    One investigated into effect of gravitation conditions during tellurium crystallization (ranging from microgravitation up to increased gravitation - 5g 0 ) on concentration of neutral (N D ) and electrically active (N AD ) acceptor structure defects in specimens grown both under complete remelting of parent ingot and under directed recrystallization of ingot with inoculation. N AD and N D concentrations and their distribution along the specimen depth were determined on the basis of analysis of electrical characteristics (conductivity and the Hall effect) measured along ingots within 1.6-300 K temperature range. The results were compared with characteristics of specimens grown following the similar program under normal conditions. At complete remelting under microgravitation one detected attributes of strong supercooling and spontaneous crystallization, as well as, of specimen resistance oscillation by its depth caused by N D modulation [ru

  4. Introduction and recovery of point defects in electron-irradiated ZnO

    International Nuclear Information System (INIS)

    Tuomisto, F.; Saarinen, K.; Look, D.C.; Farlow, G.C.

    2005-01-01

    We have used positron annihilation spectroscopy to study the introduction and recovery of point defects in electron-irradiated n-type ZnO. The irradiation (E el =2 MeV, fluence 6x10 17 cm -2 ) was performed at room temperature, and isochronal annealings were performed from 300 to 600 K. In addition, monochromatic illumination of the samples during low-temperature positron measurements was used in identification of the defects. We distinguish two kinds of vacancy defects: the Zn and O vacancies, which are either isolated or belong to defect complexes. In addition, we observe negative-ion-type defects, which are attributed to O interstitials or O antisites. The Zn vacancies and negative ions act as compensating centers and are introduced at a concentration [V Zn ]≅c ion ≅2x10 16 cm -3 . The O vacancies are introduced at a 10-times-larger concentration [V O ]≅3x10 17 cm -3 and are suggested to be isolated. The O vacancies are observed as neutral at low temperatures, and an ionization energy of 100 meV could be fitted with the help of temperature-dependent Hall data, thus indicating their deep donor character. The irradiation-induced defects fully recover after the annealing at 600 K, in good agreement with electrical measurements. The Zn vacancies recover in two separate stages, indicating that the Zn vacancies are parts of two different defect complexes. The O vacancies anneal simultaneously with the Zn vacancies at the later stage, with an activation energy of E V,O m =1.8±0.1 eV. The negative ions anneal out between the two annealing stages of the vacancies

  5. Review of candidate methods for detecting incipient defects due to aging of installed cables in nuclear power plants

    International Nuclear Information System (INIS)

    Martzloff, F.D.

    1988-01-01

    Several types of test methods have been proposed for detecting incipient defects due to aging in cable insulation systems, none offering certainty of detecting all possible types of defects. Some methods apply direct detection of a defect in the cable; other methods detect changes in electrical or non-electrical parameters from which inference can be drawn on the integrity of the cable. The paper summarizes the first year of a program conducted at the National Bureau of Standards to assess the potential of success for in situ detection of incipient defects by the most promising of these methods

  6. Advanced Electric Propulsion NextSTEP BAA Activity

    Data.gov (United States)

    National Aeronautics and Space Administration — The goal of the AES Advanced Electric Propulsion Next Space Technologies for Exploration Partnerships (NextSTEP) Broad Agency Announcement (BAA) activity is to...

  7. The complexity of electricity markets: the limits of the liberalisation of electric industries

    International Nuclear Information System (INIS)

    Finon, Dominique

    2015-12-01

    As electric industries have been liberalised or privatised later than other public utilities, notably in developed countries, this article first recalls that this activity has been during a long time a monopoly hold by a public service, and precisely planned with tariffs regulated by public authorities. Then, the author explains how deregulation is performed for such an industry to allow competition to be introduced at all levels of the electric sector. He describes the operation mode of the wholesale market which is structured in an hourly market due to the non-storable characteristic of electricity, describes retail price formation by pilling up the wholesale price, regulated tariffs of transport and distribution, and a tax aimed at paying the cost of public policies. This price can be compared with the regulated tariff which previously encompassed everything without any dissociation. Finally, he highlights the main defects and drawbacks of this market which do not allow long term investments in base equipment, back up equipment and on low carbon equipment (renewable, nuclear, and others)

  8. Nonlinear X-ray production of defect spins in vitreous SiO2: the roles of creation and activation

    International Nuclear Information System (INIS)

    Galeener, F.L.; Kerwin, D.B.; Miller, A.J.

    1992-01-01

    The dependence of spin concentration on X-ray dose is shown to be nonlinear in distinctive ways for the three most common defect structures in vitreous SiO 2 . We fit the data with a model invoking two concurrent simple processes: creation of new defects and activation of preexisting ones. The resultant fit parameters show dependencies on hydroxyl concentration and fictive temperature that shed new light on the processes, the defects, their origins and the radiation hardness of v-SiO 2 . (author)

  9. Study on electrical impedance matching for broadband ultrasonic transducer

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Geon Woo [University of Science and Technology, Daejeon (Korea, Republic of); Kim, Ki Bok [Korea Research Institute of Standards and Science, Center for Safety Measurement, Daejeon (Korea, Republic of); Baek, Kwang Sae [Elache Co., Busan (Korea, Republic of)

    2017-02-15

    Ultrasonic transducers with high resolution and resonant frequency are required to detect small defects (less than hundreds of μm) by ultrasonic testing. The resonance frequency and resolution of an ultrasonic transducer are closely related to the thickness of piezo-electric materials, backing materials, and the electric impedance matching technique. Among these factors, electrical impedance matching plays an important role because it can reduce the loss and reflection of ultrasonic energy differences in electrical impedance between an ultrasonic transducer and an ultrasonic defects detecting system. An LC matching circuit is the most frequently used electric matching method. It is necessary for the electrical impedance of an ultrasonic transducer to correspond to approximately 50 Ω to compensate the difference in electrical impedance between both connections. In this study, a 15 MHz immersion ultrasonic transducer was fabricated and an LC electrical impedance circuit was applied to that for having broad-band frequency characteristic.

  10. Antigravity from a spacetime defect

    OpenAIRE

    Klinkhamer, F. R.; Queiruga, J. M.

    2018-01-01

    We argue that there may exist spacetime defects embedded in Minkowski spacetime, which have negative active gravitational mass. One such spacetime defect then repels a test particle, corresponding to what may be called "antigravity."

  11. Electrical characterization of proton irradiated p+-n-n+ Si diode

    International Nuclear Information System (INIS)

    Kim, J.H.; Lee, D.U.; Kim, E.K.; Bae, Y.H.

    2006-01-01

    Electrical characterization of p + -n-n + Si power electric diodes was done with proton irradiation. The kinetic energies of irradiated protons were 2.32, 2.55 and 2.97MeV, and for each energy condition, doses of 1x10 11 , 1x10 12 and 1x10 13 cm -2 were given. By modulating the kinetic energy, the proton penetration depth into Si crystal could be adjusted to the range of 55-90μm, and then controlled to the special depth regions such as junction region, depletion region and neutral region over the depletion layer in the p + -n-n + diode structure. Defects produced by the proton irradiation affected to electrical property of the Si diode because of their carrier trapping, and then the reverse recovery time was improved from 240 to 50ns. It appeared that the defect states with activation energies of 0.47 and 0.54eV may be responsible for the decrease of the minority carrier lifetime in the proton-irradiated diode with 2.97MeV energy and 1x10 13 cm -2 doses

  12. Electrical properties of ZnO thin films grown by MOCVD

    Energy Technology Data Exchange (ETDEWEB)

    Pagni, O. [Department of Physics, Nelson Mandela Metropolitan University, P.O. Box 77000, Port Elizabeth 6031 (South Africa); Somhlahlo, N.N. [Department of Physics, Nelson Mandela Metropolitan University, P.O. Box 77000, Port Elizabeth 6031 (South Africa); Weichsel, C. [Department of Physics, Nelson Mandela Metropolitan University, P.O. Box 77000, Port Elizabeth 6031 (South Africa); Leitch, A.W.R. [Department of Physics, Nelson Mandela Metropolitan University, P.O. Box 77000, Port Elizabeth 6031 (South Africa)]. E-mail: andrew.leitch@nmmu.ac.za

    2006-04-01

    We report on the electrical characterization of ZnO films grown by MOCVD on glass and sapphire substrates. After correcting our temperature variable Hall measurements by applying the standard two-layer model, which takes into account an interfacial layer, scattering mechanisms in the ZnO films were studied as well as donor activation energies determined. ZnO films grown at different oxygen partial pressures indicated the importance of growth conditions on the defect structure by means of their conductivities and conductivity activation energies.

  13. Electrical properties of ZnO thin films grown by MOCVD

    International Nuclear Information System (INIS)

    Pagni, O.; Somhlahlo, N.N.; Weichsel, C.; Leitch, A.W.R.

    2006-01-01

    We report on the electrical characterization of ZnO films grown by MOCVD on glass and sapphire substrates. After correcting our temperature variable Hall measurements by applying the standard two-layer model, which takes into account an interfacial layer, scattering mechanisms in the ZnO films were studied as well as donor activation energies determined. ZnO films grown at different oxygen partial pressures indicated the importance of growth conditions on the defect structure by means of their conductivities and conductivity activation energies

  14. Mathematical modeling of electrical activity of uterine muscle cells.

    Science.gov (United States)

    Rihana, Sandy; Terrien, Jeremy; Germain, Guy; Marque, Catherine

    2009-06-01

    The uterine electrical activity is an efficient parameter to study the uterine contractility. In order to understand the ionic mechanisms responsible for its generation, we aimed at building a mathematical model of the uterine cell electrical activity based upon the physiological mechanisms. First, based on the voltage clamp experiments found in the literature, we focus on the principal ionic channels and their cognate currents involved in the generation of this electrical activity. Second, we provide the methodology of formulations of uterine ionic currents derived from a wide range of electrophysiological data. The model is validated step by step by comparing simulated voltage-clamp results with the experimental ones. The model reproduces successfully the generation of single spikes or trains of action potentials that fit with the experimental data. It allows analyzing ionic channels implications. Likewise, the calcium-dependent conductance influences significantly the cellular oscillatory behavior.

  15. MACRO DEFECT FREE MATERIALS; THE CHALLENGE OF MECHANOCHEMICAL ACTIVATION

    Directory of Open Access Journals (Sweden)

    MILAN DRÁBIK

    2012-12-01

    Full Text Available Macro-defect-free (MDF materials belong, according to Odler’s categorisation, to the type of materials where polymers may be successfully combined with cements and water to produce also the parameters of technological novelty and interests. A challenge, which has not been followed or indicated by now, is the option to intensify mixing of dry cement and polymer. The mechanochemical pre-reactions of dry MDF raw mixes consisting of Portland cement and polyphosphate, together with the model of atomic-level interpretations of the formed functional interfaces are proposed, experimentally tested and discussed in the present paper. The results ultimately show the activation of studied system due to the mechanochemical treatment, which consists in the initiation and measurable formation of Al(Fe–O–P cross-links already in the treated raw mixes. The mechanochemical activation of raw mixes in the high energy planetary mill for the duration of 5 minutes is proposed as the specific mixing and activation / pre-reaction step within the entire MDF synthesis procedure.

  16. Point Defects in Two-Dimensional Layered Semiconductors: Physics and Its Applications

    Science.gov (United States)

    Suh, Joonki

    Recent advances in material science and semiconductor processing have been achieved largely based on in-depth understanding, efficient management and advanced application of point defects in host semiconductors, thus finding the relevant techniques such as doping and defect engineering as a traditional scientific and technological solution. Meanwhile, two- dimensional (2D) layered semiconductors currently draw tremendous attentions due to industrial needs and their rich physics at the nanoscale; as we approach the end of critical device dimensions in silicon-based technology, ultra-thin semiconductors have the potential as next- generation channel materials, and new physics also emerges at such reduced dimensions where confinement of electrons, phonons, and other quasi-particles is significant. It is therefore rewarding and interesting to understand and redefine the impact of lattice defects by investigating their interactions with energy/charge carriers of the host matter. Potentially, the established understanding will provide unprecedented opportunities for realizing new functionalities and enhancing the performance of energy harvesting and optoelectronic devices. In this thesis, multiple novel 2D layered semiconductors, such as bismuth and transition- metal chalcogenides, are explored. Following an introduction of conventional effects induced by point defects in semiconductors, the related physics of electronically active amphoteric defects is revisited in greater details. This can elucidate the complication of a two-dimensional electron gas coexisting with the topological states on the surface of bismuth chalcogenides, recently suggested as topological insulators. Therefore, native point defects are still one of the keys to understand and exploit topological insulators. In addition to from a fundamental science point of view, the effects of point defects on the integrated thermal-electrical transport, as well as the entropy-transporting process in

  17. Defect detection in conducting materials using eddy current testing techniques

    Directory of Open Access Journals (Sweden)

    Brauer Hartmut

    2014-01-01

    Full Text Available Lorentz force eddy current testing (LET is a novel nondestructive testing technique which can be applied preferably to the identification of internal defects in nonmagnetic moving conductors. The LET is compared (similar testing conditions with the classical eddy current testing (ECT. Numerical FEM simulations have been performed to analyze the measurements as well as the identification of internal defects in nonmagnetic conductors. The results are compared with measurements to test the feasibility of defect identification. Finally, the use of LET measurements to estimate of the electrical conductors under test are described as well.

  18. Point defects in gallium arsenide characterized by positron annihilation spectroscopy and deep level transient spectroscopy

    International Nuclear Information System (INIS)

    Mih, R.; Gronsky, R.; Sterne, P.A.

    1995-01-01

    Positron annihilation lifetime spectroscopy (PALS) is a unique technique for detection of vacancy related defects in both as-grown and irradiated materials. The authors present a systematic study of vacancy defects in stoichiometrically controlled p-type Gallium Arsenide grown by the Hot-Wall Czochralski method. Microstructural information based on PALS, was correlated to crystallographic data and electrical measurements. Vacancies were detected and compared to electrical levels detected by deep level transient spectroscopy and stoichiometry based on crystallographic data

  19. Dual approaches for defects condensation

    Energy Technology Data Exchange (ETDEWEB)

    Rougemont, Romulo; Grigorio, Leonardo de Souza; Wotzasek, Clovis [Universidade Federal do Rio de Janeiro (UFRJ), RJ (Brazil); Guimaraes, Marcelo Santos [Universidade do Estado do Rio de Janeiro (UERJ), RJ (Brazil)

    2009-07-01

    Full text. Due to the fact that the QCD running coupling constant becomes larger as we go into the low energy (or large distance) limit of the theory, a perturbative treatment of its infrared (IR) region is impossible. In particular, a formal mathematical demonstration of color confinement and a complete physical understanding of the exact mechanism that confines quarks and gluons are two missing points in our current knowledge of the IR-QCD. It was known that due to the Meissner effect of expulsion of magnetic fields in a electric condensate that usual superconductors should confine magnetic monopoles. That point led to the conjecture that the QCD vacuum could be a condensate of chromomagnetic monopoles, a dual superconductor (DSC). Such a chromomagnetic condensate should be responsible for the dual Meissner effect which is expected to lead to the confinement of color charges immersed in this medium. In dual superconductor models of color confinement, magnetic monopoles appear as topological defects in points of the space where the abelian projection becomes singular. Also, condensation of other kinds of defects such as vortices in superfluids and line-like defects in solids are responsible for a great variety of phase transitions, which once more proves the relevance of the subject. In the present work we review two methods that allow us to approach the condensation of defects: the Kleinert Mechanism (KM) and the Julia-Toulouse Mechanism (JTM). We show that in the limit where the vortex gauge field goes to zero, which we identify as the signature of the condensation of defects in the dual picture, these are two equivalent dual prescriptions for obtaining an effective theory for a phase where defects are condensed, starting from the fundamental theory defined in the normal phase where defects are diluted. (author)

  20. The defects produced by electron irradiation in tellurium-doped germanium

    International Nuclear Information System (INIS)

    Fukuoka, Noboru; Saito, Haruo

    1989-01-01

    The nature of the irradiation induced defects in a germanium single crystal doped with tellurium was studied by DLTS and electrical measurements. The E c -0.21 eV level produced by irradiation with 1.5 MeV electrons was studied using the DLTS technique. It was found that the defect associated with this level is a divacancy. The E-center like defect (group V impurity-vacancy pair) introduces the E c -0.20 eV level in samples doped with a group V impurity. The level introduced by a tellurium (group VI impurity)-vacancy pair is deeper. The E c -0.16 eV level was generated by annealing at 430 K. A tellurium-vacancies complex is proposed as the defect associated with this level. (author)

  1. Laser-damage susceptibility of nodular defects in dielectric mirror coatings: AFM measurements and electric-field modeling

    International Nuclear Information System (INIS)

    Kozlowski, M.R.; DeFord, J.F.; Staggs, M.C.

    1993-01-01

    Atomic force microscopy (AFM) and electromagnetic field modeling were used to study the influence of nodular coating defects on laser-induced damage of multilayer dielectric coatings. In studies of HfO 2 /SiO 2 mirrors with 1.06 μm illumination, AFM results showed that nodular defects with high dome heights (>0.6 μm) were most susceptible to laser damage. Crater defects, formed by nodules ejected from the coating prior to illumination, were not damaged when illuminated over the same range of fluences. A finite-difference time-domain electromagnetic modeling code was used to study the influence of 3-D nodule defects on the E-field distribution within the interference coating. The modeling results show that Enfield enhancements as large as a factor of 4 can be present at the defects. Crater defects, however, result in minimal enhancement of the E-fields within the coating. These modeling results are consistent with the AFM experimental data, indicating that E-field enhancement is a contributing mechanism in defect-dominated laser damage of optical coatings

  2. Electric field enhancement of electron emission rates from Z1/2 centers in 4H-SiC

    International Nuclear Information System (INIS)

    Evwaraye, A. O.; Smith, S. R.; Mitchel, W. C.; Farlow, G. C.

    2009-01-01

    Z 1/2 defect centers were produced by irradiating 4H-SiC bulk samples with 1 MeV electrons at room temperature. The emission rate dependence on the electric field in the depletion region was measured using deep level transient spectroscopy and double-correlation deep level transient spectroscopy. It is found that the Z 1/2 defect level shows a strong electric field dependence with activation energy decreasing from E c -0.72 eV at zero field to E c -0.47 eV at 6.91x10 5 V/cm. The phonon assisted tunneling model of Karpus and Perel [Sov. Phys. JETP 64, 1376 (1986)] completely describes the experimental data. This model describes the dependence of the emission rate on electric field F as e n (F)=e no exp(F 2 /F c 2 ), where F c is the characteristic field that depends on the phonon assisted tunneling time τ 2 . The values of F c and τ 2 were determined and the analysis of the data leads to the suggestion that Z 1/2 may be a substitutional point defect.

  3. Influence of rare earth elements on radiation defect formation in silicon

    International Nuclear Information System (INIS)

    Nazyrov, D.E.

    2006-01-01

    Full text: It is known that efficiency of form and kinetics annealing of radiation defects influence greatly presence of initial in controlling electrically active or inactive impurities, their concentration and position in a lattice of a semiconductor. From this point of view of impurities of group of rare earths elements (REE) are of great interest, they interact with primary radiation defects creating electrically passive complexes such as . Thus they increase radiation stability of silicon. The purpose of the given work was the investigation of effect of irradiation by γ-quanta 60 Co properties of silicon doped REE-by samarium, gadolinium and erbium. The doping of silicon was carried out by growth process. Concentration of REE - samarium, gadolinium and erbium in silicon according to neutron-activation analysis equaled 10 14 /5·10 18 cm 2 . Silicon doped by phosphorus - 15/50 Ωcm were used as control samples. The results of investigations were obtained from DLTS (deep level transient spectroscopy) measurements, Hall effect and electrical measurements on definition of a resistivity, lifetime of minority carriers of a charge and optically active of concentrations of oxygen and carbon. The optical recharge by the infrared light emitting diode (P=10 mV, λ=0,95 μm) was used for investigation of deep levels (DL) situated in lower half of band gap. In control samples irradiated by the γ-quanta 60 Co with a dose 10 16 / 5·10 18 cm -2 formation DL was found in band, the parameters of which are well-known: A-, E-centers etc. Depending on a dose of an effect of irradiate in an energy spectrum of radiation defects in Si of essential changes, except for concentration is not observed. The deep levels concentration the E c -0,17 eV and E c -0,4 eV in Si is essentially reduced with respect control samples. The comparison the dose of associations of observable levels in irradiated n-Si with similar associations in control samples shows, that a velocity of introduction

  4. Defect spectroscopy of nanodiamond thin layers

    Czech Academy of Sciences Publication Activity Database

    Kravets, Roman; Johnston, K.; Potměšil, Jiří; Vorlíček, Vladimír; Vaněček, Milan

    2006-01-01

    Roč. 15, - (2006), s. 559-563 ISSN 0925-9635 R&D Projects: GA ČR(CZ) GA202/05/2233 Grant - others:Marie Curie Research Training Network(XE) MRTN-CT-2004-512224 Institutional research plan: CEZ:AV0Z10100521 Keywords : diamond film * nanocrystalline * defect characterization * electrical properties Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.935, year: 2006

  5. Theoretical analysis of the influence of flexoelectric effect on the defect site in nematic inversion walls

    Science.gov (United States)

    Gui-Li, Zheng; Hui, Zhang; Wen-Jiang, Ye; Zhi-Dong, Zhang; Hong-Wei, Song; Li, Xuan

    2016-03-01

    Based on the experimental phenomena of flexoelectric response at defect sites in nematic inversion walls conducted by Kumar et al., we gave the theoretical analysis using the Frank elastic theory. When a direct-current electric field normal to the plane of the substrate is applied to the parallel aligned nematic liquid crystal cell with weak anchoring, the rotation of ±1 defects in the narrow inversion walls can be exhibited. The free energy of liquid crystal molecules around the +1 and -1 defect sites in the nematic inversion walls under the electric field was formulated and the electric-field-driven structural changes at the defect site characterized by polar and azimuthal angles of the local director were simulated. The results reveal that the deviation of azimuthal angle induced by flexoelectric effect are consistent with the switching of extinction brushes at the +1 and -1 defects obtained in the experiment conducted by Kumar et al. Project supported by the National Natural Science Foundation of China (Grant Nos. 11374087, 11274088, and 11304074), the Natural Science Foundation of Hebei Province, China (Grant Nos. A2014202123 and A2016202282), the Research Project of Hebei Education Department, China (Grant Nos. QN2014130 and QN2015260), and the Key Subject Construction Project of Hebei Province University, China.

  6. External cardiac compression may be harmful in some scenarios of pulseless electrical activity.

    Science.gov (United States)

    Hogan, T S

    2012-10-01

    Pulseless electrical activity occurs when organised or semi-organised electrical activity of the heart persists but the product of systemic vascular resistance and the increase in systemic arterial flow generated by the ejection of the left venticular stroke volume is not sufficient to produce a clinically detectable pulse. Pulseless electrical activity encompasses a very heterogeneous variety of severe circulatory shock states ranging in severity from pseudo-cardiac arrest to effective cardiac arrest. Outcomes of cardiopulmonary resuscitation for pulseless electrical activity are generally poor. Impairment of cardiac filling is the limiting factor to cardiac output in many scenarios of pulseless electrical activity, including extreme vasodilatory shock states. There is no evidence that external cardiac compression can increase cardiac output when impaired cardiac filling is the limiting factor to cardiac output. If impaired cardiac filling is the limiting factor to cardiac output and the heart is effectively ejecting all the blood returning to it, then external cardiac compression can only increase cardiac output if it increases venous return and cardiac filling. Repeated cardiac compression asynchronous with the patient's cardiac cycle and raised mean intrathoracic pressure due to chest compression can be expected to reduce rather than to increase cardiac filling and therefore to reduce rather than to increase cardiac output in such circumstances. The hypothesis is proposed that the performance of external cardiac compression will have zero or negative effect on cardiac output in pulseless electrical activity when impaired cardiac filling is the limiting factor to cardiac output. External cardiac compression may be both directly and indirectly harmful to significant sub-groups of patients with pulseless electrical activity. We have neither evidence nor theory to provide comfort that external cardiac compression is not harmful in many scenarios of pulseless

  7. External cardiac compression may be harmful in some scenarios of pulseless electrical activity.

    LENUS (Irish Health Repository)

    Hogan, T S

    2012-10-01

    Pulseless electrical activity occurs when organised or semi-organised electrical activity of the heart persists but the product of systemic vascular resistance and the increase in systemic arterial flow generated by the ejection of the left venticular stroke volume is not sufficient to produce a clinically detectable pulse. Pulseless electrical activity encompasses a very heterogeneous variety of severe circulatory shock states ranging in severity from pseudo-cardiac arrest to effective cardiac arrest. Outcomes of cardiopulmonary resuscitation for pulseless electrical activity are generally poor. Impairment of cardiac filling is the limiting factor to cardiac output in many scenarios of pulseless electrical activity, including extreme vasodilatory shock states. There is no evidence that external cardiac compression can increase cardiac output when impaired cardiac filling is the limiting factor to cardiac output. If impaired cardiac filling is the limiting factor to cardiac output and the heart is effectively ejecting all the blood returning to it, then external cardiac compression can only increase cardiac output if it increases venous return and cardiac filling. Repeated cardiac compression asynchronous with the patient\\'s cardiac cycle and raised mean intrathoracic pressure due to chest compression can be expected to reduce rather than to increase cardiac filling and therefore to reduce rather than to increase cardiac output in such circumstances. The hypothesis is proposed that the performance of external cardiac compression will have zero or negative effect on cardiac output in pulseless electrical activity when impaired cardiac filling is the limiting factor to cardiac output. External cardiac compression may be both directly and indirectly harmful to significant sub-groups of patients with pulseless electrical activity. We have neither evidence nor theory to provide comfort that external cardiac compression is not harmful in many scenarios of pulseless

  8. Investigation of radiation defects in InSb formed by charged high energy nuclear particles

    International Nuclear Information System (INIS)

    Vikhlij, G.A.; Karpenko, A.Ya.; Litovchenko, P.G.; Tarabrova, L.I.; Groza, A.A.

    1990-01-01

    A possibility of creation of high concentrations of radiation defects in the bulk of InSb samples by 47 MeV protons and 80 MeV alpha particles is considered. Dose dependences of electroconductivity, optical absorption spectra as well as temperature and field relations of galvanomagnetic properties of samples with defects are investigated. Annealing stages and electrical properties of defects annealed at these stages are determined. 17 refs.; 7 figs

  9. Spin helical states and spin transport of the line defect in silicene lattice

    Energy Technology Data Exchange (ETDEWEB)

    Yang, Mou; Chen, Dong-Hai; Wang, Rui-Qiang [Laboratory of Quantum Engineering and Quantum Materials, School of Physics and Telecommunication Engineering, South China Normal University, Guangzhou 510006 (China); Bai, Yan-Kui, E-mail: ykbai@semi.ac.cn [College of Physical Science and Information Engineering and Hebei Advance Thin Films Laboratory, Hebei Normal University, Shijiazhuang, Hebei 050024 (China)

    2015-02-06

    We investigated the electronic structure of a silicene-like lattice with a line defect under the consideration of spin–orbit coupling. In the bulk energy gap, there are defect related bands corresponding to spin helical states localized beside the defect line: spin-up electrons flow forward on one side near the line defect and move backward on the other side, and vice versa for spin-down electrons. When the system is subjected to random distribution of spin-flipping scatterers, electrons suffer much less spin-flipped scattering when they transport along the line defect than in the bulk. An electric gate above the line defect can tune the spin-flipped transmission, which makes the line defect as a spin-controllable waveguide. - Highlights: • Band structure of silicene with a line defect. • Spin helical states around the line defect and their probability distribution features. • Spin transport along the line defect and that in the bulk silicene.

  10. Defects in the Expression of Chloroplast Proteins Leads to H2O2 Accumulation and Activation of Cyclic Electron Flow around Photosystem I

    Energy Technology Data Exchange (ETDEWEB)

    Strand, Deserah D.; Livingston, Aaron K.; Satoh-Cruz, Mio; Koepke, Tyson; Enlow, Heather M.; Fisher, Nicholas; Froehlich, John E.; Cruz, Jeffrey A.; Minhas, Deepika; Hixson, Kim K.; Kohzuma, Kaori; Lipton, Mary; Dhingra, Amit; Kramer, David M.

    2017-01-13

    We describe a new member of the class of mutants in Arabidopsis exhibiting high rates of cyclic electron flow around photosystem I (CEF), a light-driven process that produces ATP but not NADPH. High cyclic electron flow 2 (hcef2) shows strongly increased CEF activity through the NADPH dehydrogenase complex (NDH), accompanied by increases in thylakoid proton motive force (pmf), activation of the photoprotective qE response, and the accumulation of H2O2 . Surprisingly, hcef2 was mapped to a nonsense mutation in the TADA1 (tRNA adenosine deaminase arginine) locus, coding for a plastid targeted tRNA editing enzyme required for efficient codon recognition. Comparison of protein content from representative thylakoid complexes, the cytochrome bf complex and the ATP synthase, suggests that inefficient translation of hcef2 leads to compromised complex assembly or stability leading to alterations in stoichiometries of major thylakoid complexes as well as their constituent subunits. Altered subunit stoichiometries for photosystem I, ratios and properties of cytochrome bf hemes, and the decay kinetics of the flash induced thylakoid electric field suggest that these defect lead to accumulation of H2O2 in hcef2, which we have previously shown leads to activation of NDHrelated CEF. We observed similar increases in CEF and H2O2 accumulation in other translation defective mutants, suggesting that loss of coordination in plastid protein levels lead to imbalances in the photosynthetic energy balance that leads to increased CEF. These results, together with a large body of previous observations, support a general model in which processes that imbalances in chloroplast energetics result in the production of H2O2 , which activates CEF, either as a redox signal or by inducing deficits in ATP levels.

  11. Carbon nanotube as NEMS sensor - effect of chirality and stone-wales defect intend

    International Nuclear Information System (INIS)

    Gayathri, V; Geetha, R

    2006-01-01

    Having nanosize and unique electrical properties, carbon nanotubes (CNTs) attract lot of interest among scientific community all over the world. One of the recent observations is its role as nanosensors. Obviously the nanosize and high strength of CNT are most preferred parameter for technical and electromechanical field in the industrial point of view. The defects in CNT structure have a vital role in determining their electrical and mechanical properties. Our earlier study indicates an effective role played by the topological defects like pentagon and octagon on the electromechanical properties of these nanostructures. Here our aim is to look in to the effect of Stone-wales defect and chirality on this property of nanotubes deformed under applied pressure. Among the three kinds of tubes considered for this study, we observed that armchair (5, 5) tube is more suitable for sensor applications

  12. Physical models and codes for prediction of activity release from defective fuel rods under operation conditions and in leakage tests during refuelling

    International Nuclear Information System (INIS)

    Likhanskii, V.; Evdokimov, I.; Khoruzhii, O.; Sorokin, A.; Novikov, V.

    2003-01-01

    It is appropriate to use the dependences, based on physical models, in the design-analytical codes for improving of reliability of defective fuel rod detection and for determination of defect characteristics by activity measuring in the primary coolant. In the paper the results on development of some physical models and integral mechanistic codes, assigned for prediction of defective fuel rod behaviour are presented. The analysis of mass transfer and mass exchange between fuel rod and coolant showed that the rates of these processes depends on many factors, such as coolant turbulent flow, pressure, effective hydraulic diameter of defect, fuel rod geometric parameters. The models, which describe these dependences, have been created. The models of thermomechanical fuel behaviour, stable gaseous FP release were modified and new computer code RTOP-CA was created thereupon for description of defective fuel rod behaviour and activity release into the primary coolant. The model of fuel oxidation in in-pile conditions, which includes radiolysis and RTOP-LT after validation of physical models are planned to be used for prediction of defective fuel rods behaviour

  13. Defect design of insulation systems for photovoltaic modules

    Science.gov (United States)

    Mon, G. R.

    1981-01-01

    A defect-design approach to sizing electrical insulation systems for terrestrial photovoltaic modules is presented. It consists of gathering voltage-breakdown statistics on various thicknesses of candidate insulation films where, for a designated voltage, module failure probabilities for enumerated thickness and number-of-layer film combinations are calculated. Cost analysis then selects the most economical insulation system. A manufacturing yield problem is solved to exemplify the technique. Results for unaged Mylar suggest using fewer layers of thicker films. Defect design incorporates effects of flaws in optimal insulation system selection, and obviates choosing a tolerable failure rate, since the optimization process accomplishes that. Exposure to weathering and voltage stress reduces the voltage-withstanding capability of module insulation films. Defect design, applied to aged polyester films, promises to yield reliable, cost-optimal insulation systems.

  14. Defect formation energy for charge states of CdMnTe

    International Nuclear Information System (INIS)

    Mehrabova, M.A.; Orujov, H.S.; Hasanli, R.N.

    2014-01-01

    Full text : Cd 1 -xMn x Te semimagnetic semiconductors are promising materials for X-ray and gamma-detectors, solar cells, optic insulators and etc. For obtaining high-sensitive and radiation-resistant materials, as well as creation of devices based on them it is necessary to know the mechanism of defect formation in semimagnetic conductors. Defects in semiconductors not only influence on electrical and optic properties of these materials, but also display their interesting physical properties

  15. The effect of topological defects and oxygen adsorption on the electronic transport properties of single-walled carbon-nanotubes

    International Nuclear Information System (INIS)

    Grujicic, M.; Cao, G.; Singh, R.

    2003-01-01

    Ab initio density functional theory (DFT) calculations of the interactions between isolated infinitely-long semiconducting zig-zag (10, 0) or isolated infinitely-long metallic arm-chair (5, 5) single-walled carbon-nanotubes (SWCNTs) and single oxygen-molecules are carried out in order to determine the character of molecular-oxygen adsorption and its effect on electronic transport properties of these SWCNTs. A Green's function method combined with a nearest-neighbor tight-binding Hamiltonian in a non-orthogonal basis is used to compute the electrical conductance of SWCNTs and its dependence on the presence of topological defects in SWCNTs and of molecular-oxygen adsorbates. The computational results obtained show that in both semiconducting and metallic SWCNTs, oxygen-molecules are physisorbed to the defect-free nanotube walls, but when such walls contain topological defects, oxygen-molecules become strongly chemisorbed. In semiconducting (10, 0) SWCNTs, physisorbed O 2 -molecules are found to significantly increase electrical conductance while the effect of 7-5-5-7 defects is practically annulled by chemisorbed O 2 -molecules. In metallic (5, 5) SWCNTs, both O 2 adsorbates and 7-5-5-7 defects are found to have a relatively small effect on electrical conductance of these nanotubes

  16. Intrinsic defects in silicon carbide for spin-based quantum applications

    International Nuclear Information System (INIS)

    Vladimir Dyakonov

    2014-01-01

    We present a set of experiments demonstrating a high potential of atomic-scale defects in SiC for various spin-based applications, including quantum information processing and photonics. In particular, we show that defect spn qubits in SiC can be addressed, manipulated and selectively read out by means of the double radio-optical resonance. The situation reminds the one in the atomic spectroscopy, where the atoms have their individual extremely sharp optical and RF resonance fingerprints. We also generate inverse population in some intrinsic defects, resulting in stimulated microwave emission at RT. This is a crucial step towards implementation of highly-integrable solid-state masers and extraordinarily sensitive microwave detectors. As an application example, we incorporate intrinsic defects in LED structures and show that they can be electrically driven at room temperature. (author)

  17. Influence of dopant concentration on the electrical properties of the CdSe-PMMA nanocomposite

    Energy Technology Data Exchange (ETDEWEB)

    Kaur, Ramneek; Tripathi, S. K., E-mail: surya@pu.ac.in, E-mail: surya-tr@yahoo.com [Department of Physics, Center of Advanced Study in Physics, Panjab University, Chandigarh-160 014 (India)

    2016-05-06

    This paper reports the synthesis and electrical characterization of CdSe-PMMA nanocomposite. CdSe-PMMA nanocomposite has been prepared by ex-situ technique through chemical route. The influence of three different Ag doping concentrations on the electrical properties has been studied in the temperature range ∼ 303-353 K. Transmission electron micrograph reveals the spherical morphology of the CdSe nanoparticles and their proper dispersion in the PMMA matrix. The electrical conduction of the polymer nanocomposites is through thermally activated process with single activation energy. With Ag doping, initially the activation energy increases upto 0.2 % Ag doping concentration but with further increase in Ag concentration, it decreases. This behavior has been discussed on the basis of randomly oriented grain boundaries and defect states. Thus, the results indicate that the transport properties of the polymer nanocomposites can be tailored by controlled doping concentration.

  18. Influence of dopant concentration on the electrical properties of the CdSe-PMMA nanocomposite

    International Nuclear Information System (INIS)

    Kaur, Ramneek; Tripathi, S. K.

    2016-01-01

    This paper reports the synthesis and electrical characterization of CdSe-PMMA nanocomposite. CdSe-PMMA nanocomposite has been prepared by ex-situ technique through chemical route. The influence of three different Ag doping concentrations on the electrical properties has been studied in the temperature range ∼ 303-353 K. Transmission electron micrograph reveals the spherical morphology of the CdSe nanoparticles and their proper dispersion in the PMMA matrix. The electrical conduction of the polymer nanocomposites is through thermally activated process with single activation energy. With Ag doping, initially the activation energy increases upto 0.2 % Ag doping concentration but with further increase in Ag concentration, it decreases. This behavior has been discussed on the basis of randomly oriented grain boundaries and defect states. Thus, the results indicate that the transport properties of the polymer nanocomposites can be tailored by controlled doping concentration.

  19. Electronic structure of point defects in semiconductors

    International Nuclear Information System (INIS)

    Bruneval, Fabien

    2014-01-01

    This 'Habilitation a diriger des Recherches' memoir presents most of my scientific activities during the past 7 years, in the field of electronic structure calculations of defects in solids. Point defects (vacancies, interstitials, impurities) in functional materials are a key parameter to determine if these materials will actually fill the role they have been assigned or not. Indeed, the presence of defects cannot be avoided when the temperature is increased or when the material is subjected to external stresses, such as irradiation in the nuclear reactors and in artificial satellites with solar radiations. However, in many cases, defects are introduced in the materials on purpose to tune the electronic transport, optical or even magnetic properties. This procedure is called the doping of semiconductors, which is the foundation technique for transistors, diodes, or photovoltaic cells. However, doping is not always straightforward and unexpected features may occur, such as doping asymmetry or Fermi level pinning, which can only be explained by complex phenomena involving different types of defects or complexes of defects. In this context, the calculations of electronic structure ab initio is an ideal tool to complement the experimental observations, to gain the understanding of phenomena at the atomic level, and even to predict the properties of defects. The power of the ab initio calculations comes from their ability to describe any system of electrons and nuclei without any specific adjustment. But although there is a strong need for numerical simulations in this field, the ab initio calculations for defects are still under development as of today. The work presented in this memoir summarizes my contributions to methodological developments on this subject. These developments have followed two main tracks. The first topic is the better understanding of the unavoidable finite size effects. Indeed, defects in semiconductors or insulators are generally present in

  20. Deterministic Electrical Charge-State Initialization of Single Nitrogen-Vacancy Center in Diamond

    Directory of Open Access Journals (Sweden)

    Y. Doi

    2014-03-01

    Full Text Available Apart from applications in classical information-processing devices, the electrical control of atomic defects in solids at room temperature will have a tremendous impact on quantum devices that are based on such defects. In this study, we demonstrate the electrical manipulation of individual prominent representatives of such atomic solid-state defects, namely, the negative charge state of single nitrogen-vacancy defect centers (NV^{−} in diamond. We experimentally demonstrate, deterministic, purely electrical charge-state initialization of individual NV centers. The NV centers are placed in the intrinsic region of a p-i-n diode structure that facilitates the delivery of charge carriers to the defect for charge-state switching. The charge-state dynamics of a single NV center were investigated by time-resolved measurements and a nondestructive single-shot readout of the charge state. Fast charge-state switching rates (from negative to neutrally charged defects, which are greater than 0.72 ± 0.10  μs^{−1}, were realized. Furthermore, in no-operation mode, the realized charge states were stable for presumably much more than 0.45 s. We believe that the results obtained are useful not only for ultrafast electrical control of qubits, long T_{2} quantum memory, and quantum sensors associated with single NV centers but also for classical memory devices based on single atomic storage bits working under ambient conditions.

  1. Defect-band mediated ferromagnetism in Gd-doped ZnO thin films

    KAUST Repository

    Venkatesh, S.

    2015-01-07

    Gd-doped ZnO thin films prepared by pulsed laser deposition with Gd concentrations varying from 0.02–0.45 atomic percent (at. %) showed deposition oxygen pressure controlled ferromagnetism. Thin films prepared with Gd dopant levels (electric transport properties showed that the ferromagnetic exchange is mediated by a spin-split defect band formed due to oxygen deficiency related defect complexes. Mott\\'s theory of variable range of hopping conduction confirms the formation of the impurity/defect band near the Fermi level.

  2. Defects at oxide surfaces

    CERN Document Server

    Thornton, Geoff

    2015-01-01

    This book presents the basics and characterization of defects at oxide surfaces. It provides a state-of-the-art review of the field, containing information to the various types of surface defects, describes analytical methods to study defects, their chemical activity and the catalytic reactivity of oxides. Numerical simulations of defective structures complete the picture developed. Defects on planar surfaces form the focus of much of the book, although the investigation of powder samples also form an important part. The experimental study of planar surfaces opens the possibility of applying the large armoury of techniques that have been developed over the last half-century to study surfaces in ultra-high vacuum. This enables the acquisition of atomic level data under well-controlled conditions, providing a stringent test of theoretical methods. The latter can then be more reliably applied to systems such as nanoparticles for which accurate methods of characterization of structure and electronic properties ha...

  3. Defects in ZnO, CdTe, and Si: Optical, structural, and electrical characterization

    CERN Multimedia

    Deicher, M; Kronenberg, J; Johnston, K; Roder, J; Byrne, D J

    Electronic and optical properties of semiconductors are extremely sensitive to defects and impurities that have localized electronic states with energy levels in the band gap of the semiconductor. Spectroscopic techniques like photo-luminescence (PL), deep level transient spectroscopy (DLTS), or Hall effect that are able to detect and characterize band gap states do not reveal direct information about their microscopic origin. To overcome this chemical "blindness" radioactive isotopes are used as a tracer. Moreover, the recoil energies involved in ${\\beta}$- and ${\\gamma}$-decays can be used to create intrinsic, isolated point defects (interstitials, vacancies) in a controlled way. A microscopic insight into the structure and the thermodynamic properties of complexes formed by interacting defects can be gained by detecting the hyperfine interaction between the nuclear moments of radioactive dopants and the electromagnetic fields present at the site of the radioactive nucleus. These techniques will be used to...

  4. Kinetics of cluster-related defects in silicon sensors irradiated with monoenergetic electrons

    Science.gov (United States)

    Radu, R.; Pintilie, I.; Makarenko, L. F.; Fretwurst, E.; Lindstroem, G.

    2018-04-01

    This work focuses on the kinetic mechanisms responsible for the annealing behavior of radiation cluster-related defects with impact on the electrical performance of silicon sensors. Such sensors were manufactured on high resistivity n-type standard float-zone (STFZ) and oxygen enriched float-zone (DOFZ) material and had been irradiated with mono-energetic electrons of 3.5 MeV energy and fluences of 3 × 1014 cm-2 and 6 × 1014 cm-2. After irradiation, the samples were subjected either to isochronal or isothermal heat treatments in the temperature range from 80 °C to 300 °C. The specific investigated defects are a group of three deep acceptors [H(116 K), H(140 K), and H(152 K)] with energy levels in the lower half of the band gap and a shallow donor E(30 K) with a level at 0.1 eV below the conduction band. The stability and kinetics of these defects at high temperatures are discussed on the basis of the extracted activation energies and frequency factors. The annealing of the H defects takes place similarly in both types of materials, suggesting a migration rather than a dissociation mechanism. On the contrary, the E(30 K) defect shows a very different annealing behavior, being stable in STFZ even at 300 °C, but annealing-out quickly in DOFZ material at temperatures higher than 200 °C , with a high frequency factor of the order of 1013 s-1. Such a behavior rules out a dissociation process, and the different annealing behavior is suggested to be related to a bistable behavior of the defect.

  5. Effects of geomagnetic activity on the mesospheric electric fields

    Directory of Open Access Journals (Sweden)

    A. M. Zadorozhny

    1998-12-01

    Full Text Available The results of three series of rocket measurements of mesospheric electric fields carried out under different geomagnetic conditions at polar and high middle latitudes are analysed. The measurements show a clear dependence of the vertical electric fields on geomagnetic activity at polar and high middle latitudes. The vertical electric fields in the lower mesosphere increase with the increase of geomagnetic indexes Kp and ∑Kp. The simultaneous increase of the vertical electric field strength and ion conductivity was observed in the mesosphere during geomagnetic disturbances. This striking phenomenon was displayed most clearly during the solar proton events of October, 1989 accompanied by very strong geomagnetic storm (Kp=8+. A possible mechanism of generation of the vertical electric fields in the mesosphere caused by gravitational sedimentation of charged aerosol particles is discussed. Simultaneous existence in the mesosphere of both the negative and positive multiply charged aerosol particles of different sizes is assumed for explanation of the observed V/m vertical electric fields and their behaviour under geomagnetically disturbed conditions.Keywords. Atmospheric composition and structure (aerosols and particles · Ionosphere (electric fields and currents · Meteorology and atmospheric dynamics (atmospheric electricity

  6. Low-temperature electron irradiation induced defects in gallium arsenide: bulk and surface acoustic wave studies

    International Nuclear Information System (INIS)

    Brophy, M.J. Jr.

    1985-01-01

    Irradiation of GaAs with 2.25 to 2.5 MeV electrons at temperatures below 190 K produces two peaks in ultrasonic attenuation versus temperature. The defects responsible for both peaks have trigonal symmetry and were observed in n-type and semi-insulating GaAs with bulk and surface acoustic waves (SAW) respectively. Bulk waves at eight frequencies between 9 and 130 MHz and SAW at 73 and 145 MHz were used. The reorientation kinetics of both peaks follow the Arrhenius law. The annealing of both peaks was studied with isochronal and isothermal anneals in the temperature range 200 to 335 K. Peak I anneals with a spectrum of activation energies in the range 0.7-1.1 eV between 220 and 335 K. Peak II anneals with a single activation energy of about 1.1 eV above 300K. The different annealing characteristics indicate that these peaks represent two distinct defects. The annealing above 300 K has not been seen in electrical resistivity measurements, but was observed in earlier length change experiments. Irradiation of GaAs:Cr produces no Cr-radiation defect complexes. The attenuation peak associated with Cr 2+ decrease with electron dose, but starts to recover at 150 K

  7. Spontaneous Electrical Activity in the Nervous System and its ...

    African Journals Online (AJOL)

    The present study was carried out to examine the effects of biogenic amines on the spontaneous electrical activity of the nervous system in the silkworm Bombyx mori. The activity recorded from different segments of the ventral nerve cord differed in the frequency and number of spike categories firing. The activity was highest ...

  8. Dynamical analysis of uterine cell electrical activity model.

    Science.gov (United States)

    Rihana, S; Santos, J; Mondie, S; Marque, C

    2006-01-01

    The uterus is a physiological system consisting of a large number of interacting smooth muscle cells. The uterine excitability changes remarkably with time, generally quiescent during pregnancy, the uterus exhibits forceful synchronized contractions at term leading to fetus expulsion. These changes characterize thus a dynamical system susceptible of being studied through formal mathematical tools. Multiple physiological factors are involved in the regulation process of this complex system. Our aim is to relate the physiological factors to the uterine cell dynamic behaviors. Taking into account a previous work presented, in which the electrical activity of a uterine cell is described by a set of ordinary differential equations, we analyze the impact of physiological parameters on the response of the model, and identify the main subsystems generating the complex uterine electrical activity, with respect to physiological data.

  9. Excessive activity of cathepsin K is associated with cartilage defects in a zebrafish model of mucolipidosis II

    Directory of Open Access Journals (Sweden)

    Aaron C. Petrey

    2012-03-01

    The severe pediatric disorder mucolipidosis II (ML-II; also known as I-cell disease is caused by defects in mannose 6-phosphate (Man-6-P biosynthesis. Patients with ML-II exhibit multiple developmental defects, including skeletal, craniofacial and joint abnormalities. To date, the molecular mechanisms that underlie these clinical manifestations are poorly understood. Taking advantage of a zebrafish model of ML-II, we previously showed that the cartilage morphogenesis defects in this model are associated with altered chondrocyte differentiation and excessive deposition of type II collagen, indicating that aspects of development that rely on proper extracellular matrix homeostasis are sensitive to decreases in Man-6-P biosynthesis. To further investigate the molecular bases for the cartilage phenotypes, we analyzed the transcript abundance of several genes in chondrocyte-enriched cell populations isolated from wild-type and ML-II zebrafish embryos. Increased levels of cathepsin and matrix metalloproteinase (MMP transcripts were noted in ML-II cell populations. This increase in transcript abundance corresponded with elevated and sustained activity of several cathepsins (K, L and S and MMP-13 during early development. Unlike MMP-13, for which higher levels of protein were detected, the sustained activity of cathepsin K at later stages seemed to result from its abnormal processing and activation. Inhibition of cathepsin K activity by pharmacological or genetic means not only reduced the activity of this enzyme but led to a broad reduction in additional protease activity, significant correction of the cartilage morphogenesis phenotype and reduced type II collagen staining in ML-II embryos. Our findings suggest a central role for excessive cathepsin K activity in the developmental aspects of ML-II cartilage pathogenesis and highlight the utility of the zebrafish system to address the biochemical underpinnings of metabolic disease.

  10. Large piezoelectricity in electric-field modified single crystals of SrTiO3

    Science.gov (United States)

    Khanbabaee, B.; Mehner, E.; Richter, C.; Hanzig, J.; Zschornak, M.; Pietsch, U.; Stöcker, H.; Leisegang, T.; Meyer, D. C.; Gorfman, S.

    2016-11-01

    Defect engineering is an effective and powerful tool to control the existing material properties and produce completely new ones, which are symmetry-forbidden in a defect-free crystal. For example, the application of a static electric field to a single crystal of SrTiO3 forms a strained near-surface layer through the migration of oxygen vacancies out of the area beneath the positively charged electrode. While it was previously shown that this near-surface phase holds pyroelectric properties, which are symmetry-forbidden in centrosymmetric bulk SrTiO3, this paper reports that the same phase is strongly piezoelectric. We demonstrate the piezoelectricity of this phase through stroboscopic time-resolved X-ray diffraction under alternating electric field and show that the effective piezoelectric coefficient d33 ranges between 60 and 100 pC/N. The possible atomistic origins of the piezoelectric activity are discussed as a coupling between the electrostrictive effect and spontaneous polarization of this near-surface phase.

  11. Electric field driven orbital order-disorder transition in LaMnO3

    International Nuclear Information System (INIS)

    Bhattacharya, Dipten

    2012-01-01

    The external stimulation such as mechanical pressure magnetic field, electric field, and optical pulse driven phase transition and concomitant gigantic response in physical properties in terms of orders of magnitude jump in electrical resistivity, magnetization, thermoelectric power, or optical constants etc in strongly correlated electron systems has fascinated the researchers for more than two decades now. The underlying physics is nontrivial and the application potential is enormous. We report here our observation of pulsed electric field driven orbital order-disorder transition in canonical orbital ordered system LaMnO 3 . The LaMnO 3 , with orthorhombic crystallographic structure (space group Pbnm), possesses A-type magnetic order below T N (∼ 140 K) and C-type orbital order, with ordering of active 3d 3x 2 -r 2 /3d 3y 2 -r 2 orbitals within a plane and stacking across the plane, below Too (∼ 750 K). We have studied the electrical current-voltage characteristics as well as the differential thermal scans across a wide temperature range 80-800 K under pulsed field on a high quality single crystal of LaMnO 3 . We show how under pulsed electric field, T00 shifts towards lower temperature and the latent heat of the transition decreases monotonically. We also show that the electrical resistivity jumps by more than five orders of magnitude beyond a threshold electric field a low temperature (∼ 80 K). The field driven transition turns out to be originating electro-migration of lattice defects and consequent depinning of orbital domains. The orbital order in LaMnO 3 is not a continuum. It is granular because of interaction with lattice strain, defects, or even interference between Jahn-Teller and MnO 6 tilt order. The domains are pinned by the defects. The electric field driven migration leads to depinning transition. The model of depinning of charge density waves appears to be fitting the data observed in the present case closely, since the orbital order in La

  12. Effects of geomagnetic activity on the mesospheric electric fields

    Directory of Open Access Journals (Sweden)

    A. M. Zadorozhny

    Full Text Available The results of three series of rocket measurements of mesospheric electric fields carried out under different geomagnetic conditions at polar and high middle latitudes are analysed. The measurements show a clear dependence of the vertical electric fields on geomagnetic activity at polar and high middle latitudes. The vertical electric fields in the lower mesosphere increase with the increase of geomagnetic indexes Kp and ∑Kp. The simultaneous increase of the vertical electric field strength and ion conductivity was observed in the mesosphere during geomagnetic disturbances. This striking phenomenon was displayed most clearly during the solar proton events of October, 1989 accompanied by very strong geomagnetic storm (Kp=8+. A possible mechanism of generation of the vertical electric fields in the mesosphere caused by gravitational sedimentation of charged aerosol particles is discussed. Simultaneous existence in the mesosphere of both the negative and positive multiply charged aerosol particles of different sizes is assumed for explanation of the observed V/m vertical electric fields and their behaviour under geomagnetically disturbed conditions.

    Keywords. Atmospheric composition and structure (aerosols and particles · Ionosphere (electric fields and currents · Meteorology and atmospheric dynamics (atmospheric electricity

  13. Probabilistic electricity price forecasting with variational heteroscedastic Gaussian process and active learning

    International Nuclear Information System (INIS)

    Kou, Peng; Liang, Deliang; Gao, Lin; Lou, Jianyong

    2015-01-01

    Highlights: • A novel active learning model for the probabilistic electricity price forecasting. • Heteroscedastic Gaussian process that captures the local volatility of the electricity price. • Variational Bayesian learning that avoids over-fitting. • Active learning algorithm that reduces the computational efforts. - Abstract: Electricity price forecasting is essential for the market participants in their decision making. Nevertheless, the accuracy of such forecasting cannot be guaranteed due to the high variability of the price data. For this reason, in many cases, rather than merely point forecasting results, market participants are more interested in the probabilistic price forecasting results, i.e., the prediction intervals of the electricity price. Focusing on this issue, this paper proposes a new model for the probabilistic electricity price forecasting. This model is based on the active learning technique and the variational heteroscedastic Gaussian process (VHGP). It provides the heteroscedastic Gaussian prediction intervals, which effectively quantify the heteroscedastic uncertainties associated with the price data. Because the high computational effort of VHGP hinders its application to the large-scale electricity price forecasting tasks, we design an active learning algorithm to select a most informative training subset from the whole available training set. By constructing the forecasting model on this smaller subset, the computational efforts can be significantly reduced. In this way, the practical applicability of the proposed model is enhanced. The forecasting performance and the computational time of the proposed model are evaluated using the real-world electricity price data, which is obtained from the ANEM, PJM, and New England ISO

  14. Defect production by fast neutrons and thermal recovery in amorphous Pd80Si20

    International Nuclear Information System (INIS)

    Schumacher, G.; Petry, W.; Klaumuenzer, S.; Wallner, G.; Weck, G.

    1985-01-01

    Defects were introduced into variously pretreated strips of glassy Pd 80 Si 20 by fast neutron irradiation at 4.6 K 2 . The electrical resistivity was measured during irradiation up to 2.10 19 n/cm 2 as well as subsequent isochronal annealing up to 483 K. Most of the results can be understood in terms of the familiar concept of vacancy and interstitial-like defects. However, in addition to the well-known process of mutual annihilation an important mechanism for defect relaxation is the disintegration of localized defects into subatomic ones which are distributed among many atoms

  15. Localized electromagnetic modes and transmission spectrum of one-dimensional photon crystal with lattice defects

    CERN Document Server

    Vetrov, S Y

    2001-01-01

    The properties of the localized electromagnetic modes in the one-dimensional photon crystal with a structural defective layer are studied. The anisotropic layer of the nematic liquid layer is considered as the defect. It is shown that the frequency and coefficient of the defective modes attenuation essentially depend on the defective layer thickness and nematic optical axis orientation. The spectrum of the photon crystal transmittance with one or two defects in the lattice is studied. The possibility of controlling the the photon crystal transmittance spectrum on the count of changing the orientation of the nematic optical axis, for example, through the external electric field is shown with an account of strong anisotropy of the dielectric permittivity

  16. Defects in the Expression of Chloroplast Proteins Leads to H2O2 Accumulation and Activation of Cyclic Electron Flow around Photosystem I.

    Science.gov (United States)

    Strand, Deserah D; Livingston, Aaron K; Satoh-Cruz, Mio; Koepke, Tyson; Enlow, Heather M; Fisher, Nicholas; Froehlich, John E; Cruz, Jeffrey A; Minhas, Deepika; Hixson, Kim K; Kohzuma, Kaori; Lipton, Mary; Dhingra, Amit; Kramer, David M

    2016-01-01

    We describe a new member of the class of mutants in Arabidopsis exhibiting high rates of cyclic electron flow around photosystem I (CEF), a light-driven process that produces ATP but not NADPH. High cyclic electron flow 2 ( hcef2 ) shows strongly increased CEF activity through the NADPH dehydrogenase complex (NDH), accompanied by increases in thylakoid proton motive force ( pmf ), activation of the photoprotective q E response, and the accumulation of H 2 O 2 . Surprisingly, hcef2 was mapped to a non-sense mutation in the TADA1 (tRNA adenosine deaminase arginine) locus, coding for a plastid targeted tRNA editing enzyme required for efficient codon recognition. Comparison of protein content from representative thylakoid complexes, the cytochrome bf complex, and the ATP synthase, suggests that inefficient translation of hcef2 leads to compromised complex assembly or stability leading to alterations in stoichiometries of major thylakoid complexes as well as their constituent subunits. Altered subunit stoichiometries for photosystem I, ratios and properties of cytochrome bf hemes, and the decay kinetics of the flash-induced thylakoid electric field suggest that these defect lead to accumulation of H 2 O 2 in hcef2 , which we have previously shown leads to activation of NDH-related CEF. We observed similar increases in CEF, as well as increases in H 2 O 2 accumulation, in other translation defective mutants. This suggests that loss of coordination in plastid protein levels lead to imbalances in photosynthetic energy balance that leads to an increase in CEF. These results taken together with a large body of previous observations, support a general model in which processes that lead to imbalances in chloroplast energetics result in the production of H 2 O 2 , which in turn activates CEF. This activation could be from either H 2 O 2 acting as a redox signal, or by a secondary effect from H 2 O 2 inducing a deficit in ATP.

  17. Analysis of defects near the surface and the interface of semiconductors by monoenergetic positron beam

    International Nuclear Information System (INIS)

    Uedono, Akira; Tanigawa, Shoichiro

    1989-01-01

    A monoenergetic low-speed positron beam line is constructed and a study is made on defects near the surface and the interface of semiconductors by using the beam line. Sodium-22 is used as beam source. Ion implantation, though being an essential technique for semiconductor integrated circuit production, can introduce lattice defects, affecting the yield and reliability of the resultant semiconductor devices. Some observations are made on the dependence of the Doppler broadening on the depth, and the ΔS-E relationship in P + -ion implanted SiO 2 (43nm)-Si. These observations demonstrate that monoenergetic positron beam is useful to detect hole-type defects resulting from ion implantation over a very wide range of defect density. Another study is made for the detection of defects near an interface. Positrons are expected to drift when left in an electric field with a gradient. Observations made here show that positrons can be concentrated at any desired interface by introducing an electric field intensity gradient in the oxide. This process also serves for accurate measurement of the electronic structure at the interface, and the effect of ion implantation and radiations on the interface. (N.K.)

  18. Electrically detected magnetic resonance of carbon dangling bonds at the Si-face 4H-SiC/SiO2 interface

    Science.gov (United States)

    Gruber, G.; Cottom, J.; Meszaros, R.; Koch, M.; Pobegen, G.; Aichinger, T.; Peters, D.; Hadley, P.

    2018-04-01

    SiC based metal-oxide-semiconductor field-effect transistors (MOSFETs) have gained a significant importance in power electronics applications. However, electrically active defects at the SiC/SiO2 interface degrade the ideal behavior of the devices. The relevant microscopic defects can be identified by electron paramagnetic resonance (EPR) or electrically detected magnetic resonance (EDMR). This helps to decide which changes to the fabrication process will likely lead to further increases of device performance and reliability. EDMR measurements have shown very similar dominant hyperfine (HF) spectra in differently processed MOSFETs although some discrepancies were observed in the measured g-factors. Here, the HF spectra measured of different SiC MOSFETs are compared, and it is argued that the same dominant defect is present in all devices. A comparison of the data with simulated spectra of the C dangling bond (PbC) center and the silicon vacancy (VSi) demonstrates that the PbC center is a more suitable candidate to explain the observed HF spectra.

  19. The semiconductor doping with radiation defects via proton and alpha-particle irradiation. Review

    CERN Document Server

    Kozlov, V A

    2001-01-01

    Paper presents an analytical review devoted to semiconductor doping with radiation defects resulted from irradiation by light ions, in particular, by protons and alpha-particles. One studies formation of radiation defects in silicon, gallium arsenide and indium phosphide under light ion irradiation. One analyzes effect of proton and alpha-particle irradiation on electric conductivity of the above-listed semiconducting materials. Semiconductor doping with radiation defects under light ion irradiation enables to control their electrophysical properties and to design high-speed opto-, micro- and nanoelectronic devices on their basis

  20. Chemical and biological sensors based on defect-engineered graphene mesh field-effect transistors.

    Science.gov (United States)

    Cho, Seunghee H; Kwon, Sun Sang; Yi, Jaeseok; Park, Won Il

    2016-01-01

    Graphene has been intensively studied for applications to high-performance sensors, but the sensing characteristics of graphene devices have varied from case to case, and the sensing mechanism has not been satisfactorily determined thus far. In this review, we describe recent progress in engineering of the defects in graphene grown by a silica-assisted chemical vapor deposition technique and elucidate the effect of the defects upon the electrical response of graphene sensors. This review provides guidelines for engineering and/or passivating defects to improve sensor performance and reliability.

  1. Defects and defect processes in nonmetallic solids

    CERN Document Server

    Hayes, W

    2004-01-01

    This extensive survey covers defects in nonmetals, emphasizing point defects and point-defect processes. It encompasses electronic, vibrational, and optical properties of defective solids, plus dislocations and grain boundaries. 1985 edition.

  2. First-Principles Investigations of Defects in Minerals

    Science.gov (United States)

    Verma, Ashok K.

    2011-07-01

    The ideal crystal has an infinite 3-dimensional repetition of identical units which may be atoms or molecules. But real crystals are limited in size and they have disorder in stacking which as called defects. Basically three types of defects exist in solids: 1) point defects, 2) line defects, and 3) surface defects. Common point defects are vacant lattice sites, interstitial atoms and impurities and these are known to influence strongly many solid-state transport properties such as diffusion, electrical conduction, creep, etc. In thermal equilibrium point defects concentrations are determined by their formation enthalpies and their movement by their migration barriers. Line and surface defects are though absent from the ideal crystal in thermal equilibrium due to higher energy costs but they are invariably present in all real crystals. Line defects include edge-, screw- and mixed-dislocations and their presence is essential in explaining the mechanical strength and deformation of real crystals. Surface defects may arise at the boundary between two grains, or small crystals, within a larger crystal. A wide variety of grain boundaries can form in a polycrystal depending on factors such growth conditions and thermal treatment. In this talk we will present our first-principles density functional theory based defect studies of SiO2 polymorphs (stishovite, CaCl2-, α-PbO2-, and pyrite-type), Mg2SiO4 polymorphs (forsterite, wadsleyite and ringwoodite) and MgO [1-3]. Briefly, several native point defects including vacancies, interstitials, and their complexes were studied in silica polymorphs upto 200 GPa. Their values increase by a factor of 2 over the entire pressure range studied with large differences in some cases between different phases. The Schottky defects are energetically most favorable at zero pressure whereas O-Frenkel pairs become systematically more favorable at pressures higher than 20 GPa. The geometric and electronic structures of defects and migrating

  3. Defect-band mediated ferromagnetism in Gd-doped ZnO thin films

    KAUST Repository

    Venkatesh, S.; Franklin, J. B.; Ryan, M. P.; Lee, J.-S.; Ohldag, Hendrik; McLachlan, M. A.; Alford, N. M.; Roqan, Iman S.

    2015-01-01

    . %) at low oxygen deposition pressure (<25 mTorr) were ferromagnetic at room temperature. Negative magnetoresistance, electric transport properties showed that the ferromagnetic exchange is mediated by a spin-split defect band formed due to oxygen deficiency

  4. Piezoelectricity induced defect modes for shear waves in a periodically stratified supperlattice

    Science.gov (United States)

    Piliposyan, Davit

    2018-01-01

    Properties of shear waves in a piezoelectric stratified periodic structure with a defect layer are studied for a superlattice with identical piezoelectric materials in a unit cell. Due to the electro-mechanical coupling in piezoelectric materials the structure exhibits defect modes in the superlattice with full transmission peaks both for full contact and electrically shorted interfaces. The results show an existence of one or two transmission peaks depending on the interfacial conditions. In the long wavelength region where coupling between electro-magnetic and elastic waves creates frequency band gaps the defect layer introduces one or two defect modes transmitting both electro-magnetic and elastic energies. Other parameters affecting the defect modes are the thickness of the defect layer, differences in refractive indexes and the magnitude of the angle of the incident wave. The results of the paper may be useful in the design of narrow band filters or multi-channel piezoelectric filters.

  5. Radiation induced deep level defects in bipolar junction transistors under various bias conditions

    International Nuclear Information System (INIS)

    Liu, Chaoming; Yang, Jianqun; Li, Xingji; Ma, Guoliang; Xiao, Liyi; Bollmann, Joachim

    2015-01-01

    Bipolar junction transistor (BJT) is sensitive to ionization and displacement radiation effects in space. In this paper, 35 MeV Si ions were used as irradiation source to research the radiation damage on NPN and PNP bipolar transistors. The changing of electrical parameters of transistors was in situ measured with increasing irradiation fluence of 35 MeV Si ions. Using deep level transient spectroscopy (DLTS), defects in the bipolar junction transistors under various bias conditions are measured after irradiation. Based on the in situ electrical measurement and DLTS spectra, it is clearly that the bias conditions can affect the concentration of deep level defects, and the radiation damage induced by heavy ions.

  6. Magnetogastrographic detection of gastric electrical response activity in humans

    International Nuclear Information System (INIS)

    Irimia, Andrei; Richards, William O; Bradshaw, L Alan

    2006-01-01

    The detection and characterization of gastric electrical activity has important clinical applications, including the early diagnosis of gastric diseases in humans. In mammals, this phenomenon has two important features: an electrical control activity (ECA) that manifests itself as an electric slow wave (with a frequency of 3 cycles per minute in humans) and an electrical response activity (ERA) that is characterized by spiking potentials during the plateau phase of the ECA. Whereas the ECA has been recorded in humans both invasively and non-invasively (magnetogastrography-MGG), the ERA has never been detected non-invasively in humans before. In this paper, we report on our progress towards the non-invasive detection of ERA from the human stomach using a procedure that involves the application of principal component analysis to MGG recordings, which were acquired in our case from ten normal human patients using a Superconducting QUantum Interference Device (SQUID) magnetometer. Both pre- and post-prandial recordings were acquired for each patient and 20 min of recordings (10 min of pre-prandial and 10 min of post-prandial data) were analysed for each patient. The mean percentage of ECA slow waves that were found to exhibit spikes of suspected ERA origin was 41% and 61% for pre- and post-prandial recordings, respectively, implying a 47% ERA increase post-prandially (P < 0.0001 at a 95% confidence level). The detection of ERA in humans is highly encouraging and points to the possible use of non-invasive ERA recordings as a valuable tool for the study of human gastric disorders

  7. Proceedings of defect engineering in semiconductor growth, processing and device technology

    International Nuclear Information System (INIS)

    Ashok, S.; Chevallier, J.; Sumino, K.; Weber, E.

    1992-01-01

    This volume results from a symposium that was part of the 1992 Spring Meeting of the Materials Research Society, held in San Francisco from April 26 to May 1, 1992. The symposium, entitled Defect Engineering in Semiconductor Growth, Processing and Device Technology, was the first of its kind at MRS and brought together academic and industrial researchers with varying perspectives on defects in semiconductors. Its aim was to go beyond defect control, and focus instead on deliberate and controlled introduction and manipulation of defects in order to engineer some desired properties in semiconductor materials and devices. While the concept of defect engineering has at least a vague perception in techniques such as impurity/defect gettering and the use of the EL2 level in GaAs, more extensive as well as subtle uses of defects are emerging to augment the field. This symposium was intended principally to encourage creative new applications of defects in all aspects of semiconductor technology. The organization of this proceedings volume closely follows the topics around which the sessions were built. The papers on grown-in defects in bulk crystals deal with overviews of intrinsic and impurity-related defects, their influence on electrical, optical and mechanical properties, as well as the use of impurities to arrest certain types of defects during growth and defects to control growth. The issues addressed by the papers on defects in thin films include impurity and stoichiometry control, defects created by plasmas and the use of electron/ion irradiation for doping control

  8. Local defect resonance for sensitive non-destructive testing

    Science.gov (United States)

    Adebahr, W.; Solodov, I.; Rahammer, M.; Gulnizkij, N.; Kreutzbruck, M.

    2016-02-01

    Ultrasonic wave-defect interaction is a background of ultrasound activated techniques for imaging and non-destructive testing (NDT) of materials and industrial components. The interaction, primarily, results in acoustic response of a defect which provides attenuation and scattering of ultrasound used as an indicator of defects in conventional ultrasonic NDT. The derivative ultrasonic-induced effects include e.g. nonlinear, thermal, acousto-optic, etc. responses also applied for NDT and defect imaging. These secondary effects are normally relatively inefficient so that the corresponding NDT techniques require an elevated acoustic power and stand out from conventional ultrasonic NDT counterparts for their specific instrumentation particularly adapted to high-power ultrasonic. In this paper, a consistent way to enhance ultrasonic, optical and thermal defect responses and thus to reduce an ultrasonic power required is suggested by using selective ultrasonic activation of defects based on the concept of local defect resonance (LDR). A strong increase in vibration amplitude at LDR enables to reliably detect and visualize the defect as soon as the driving ultrasonic frequency is matched to the LDR frequency. This also provides a high frequency selectivity of the LDR-based imaging, i.e. an opportunity of detecting a certain defect among a multitude of other defects in material. Some examples are shown how to use LDR in non-destructive testing techniques, like vibrometry, ultrasonic thermography and shearography in order to enhance the sensitivity of defect visualization.

  9. Effect of copper on the recombination activity of extended defects in silicon

    Energy Technology Data Exchange (ETDEWEB)

    Feklisova, O. V., E-mail: feklisov@iptm.ru; Yakimov, E. B. [Russian Academy of Sciences, Institute of Microelectronics Technology and High-Purity Materials (Russian Federation)

    2015-06-15

    The effect of copper atoms introduced by high-temperature diffusion on the recombination properties of dislocations and dislocation trails in p-type single-crystal silicon is studied by the electron-beam-induced current technique. It is shown that, in contrast to dislocations, dislocation trails exhibit an increase in recombination activity after the introduction of copper. Bright contrast appearance in the vicinity of dislocation trails is detected after the diffusion of copper and quenching of the samples. The contrast depends on the defect density in these trails.

  10. Deep defect levels in standard and oxygen enriched silicon detectors before and after **6**0Co-gamma-irradiation

    CERN Document Server

    Stahl, J; Lindström, G; Pintilie, I

    2003-01-01

    Capacitance Deep Level Transient Spectroscopy (C-DLTS) measurements have been performed on standard and oxygen-doped silicon detectors manufactured from high-resistivity n-type float zone material with left angle bracket 111 right angle bracket and left angle bracket 100 right angle bracket orientation. Three different oxygen concentrations were achieved by the so-called diffusion oxygenated float zone (DOFZ) process initiated by the CERN-RD48 (ROSE) collaboration. Before the irradiation a material characterization has been performed. In contrast to radiation damage by neutrons or high- energy charged hadrons, were the bulk damage is dominated by a mixture of clusters and point defects, the bulk damage caused by **6**0Co-gamma-radiation is only due to the introduction of point defects. The dominant electrically active defects which have been detected after **6**0Co-gamma-irradiation by C-DLTS are the electron traps VO//i, C//iC//s, V//2( = /-), V //2(-/0) and the hole trap C//i O//i. The main difference betwe...

  11. Defect generation and activation processes in HfO{sub 2} thin films: Contributions to stress-induced leakage currents

    Energy Technology Data Exchange (ETDEWEB)

    Oettking, Rolf; Leitsmann, Roman; Lazarevic, Florian; Plaenitz, Philipp [AQcomputare, Business Unit MATcalc, Chemnitz (Germany); Kupke, Steve; Roll, Guntrade; Slesazeck, Stefan [NaMLab gGmbH, Dresden (Germany); Nadimi, Ebrahim [AQcomputare, Business Unit MATcalc, Chemnitz (Germany); K.N. Toosi University of Technology, Faculty of Electrical Engineering, Tehran (Iran, Islamic Republic of); Trentzsch, Martin [Globalfoundries Dresden, Dresden (Germany); Mikolajick, Thomas [Technische Universitaet Dresden, Fakultaet Elektrotechnik und Informationstechnik, Institut fuer Halbleiter- und Mikrosystemtechnik, Dresden (Germany)

    2015-03-01

    An important source of degradation in thin dielectric material layers is the generation and migration of oxygen vacancies. We investigated the formation of Frenkel pairs (FPs) in HfO{sub 2} as the first structural step for the creation of new defects as well as the migration of preexisting and newly built oxygen vacancies by nudged elastic band (NEB) calculations and stress induced leakage current (SILC) experiments. The analysis indicates, that for neutral systems no stable intimate FPs are built, whereas for the charge states q = ± 2 FPs are formed at threefold and at fourfold coordinated oxygen lattice sites. Their generation and annihilation rate are in equilibrium according to the Boltzmann statistics. Distant FPs (stable defects) are unlikely to build due to high formation energies and therefore cannot be accounted for the measured gate leakage current increase of nMOSFETs under constant voltage stress. The negatively charged oxygen vacancies were found to be very immobile in contrast to positively charged V{sub 0}'s with a low migration barrier that coincides well with the experimentally obtained activation energy. We show that rather the activation of preexisting defects and migration towards the interface than the defect generation are the cause for the gate oxide degradation. (copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  12. Radiation defects produced by neutron irradiation in germanium single crystals

    International Nuclear Information System (INIS)

    Fukuoka, Noboru; Honda, Makoto; Atobe, Kozo; Yamaji, Hiromichi; Ide, Mutsutoshi; Okada, Moritami.

    1992-01-01

    The nature of defects produced in germanium single crystals by neutron irradiation at 25 K was studied by measuring the electrical resistivity. It was found that two levels located at E c -0.06 eV and E c -0.13 eV were introduced in an arsenic-doped sample. Electron traps at E c -0.10eV were observed in an indium-doped sample. The change in electrical resistivity during irradiation was also studied. (author)

  13. Substrate and coating defect planarization strategies for high-laser-fluence multilayer mirrors

    International Nuclear Information System (INIS)

    Stolz, Christopher J.; Wolfe, Justin E.; Mirkarimi, Paul B.; Folta, James A.; Adams, John J.; Menor, Marlon G.; Teslich, Nick E.; Soufli, Regina; Menoni, Carmen S.; Patel, Dinesh

    2015-01-01

    Planarizing or smoothing over nodular defects in multilayer mirrors can be accomplished by a discrete deposit-and-etch process that exploits the angle-dependent etching rate of optical materials. Typically, nodular defects limit the fluence on mirrors irradiated at 1064 nm with 10 ns pulse lengths due to geometrically- and interference-induced light intensification. Planarized hafina/silica multilayer mirrors have demonstrated > 125 J/cm 2 laser resistance for single-shot testing and 50 J/cm 2 for multi-shot testing for nodular defects originating on the substrate surface. Two planarization methods were explored: thick planarization layers on the substrate surface and planarized silica layers throughout the multilayer in which only the silica layers that are below one half of the incoming electric field value are etched. This paper also describes the impact of planarized defects that are buried within the multilayer structure compared to planarized substrate particulate defects. - Highlights: • Defect planarization significantly improves multilayer mirror laser resistance • Substrate and coating defects have both been effectively planarized • Single and multishot laser resistance improvement was demonstrated

  14. Comprehensive Study of Solar Cell Structure Defects by Means of Noise and Light Emission Analysis

    Directory of Open Access Journals (Sweden)

    Robert Macku

    2012-01-01

    Full Text Available This paper discusses the issue of silicon solar cells localized defects from metrological and physical points of view. Structure imperfections represent the real problem because of solar cells long-term degradation and conversion efficiency decreasing. To this aim we pay our attention to research relating to the defect light emission and correlation with rectangular microplasma fluctuation. A sensitive CCD camera has been used for mapping of surface photon emission. The operation point of the samples has been set to reverse bias mode, and different electric field intensity was applied. We managed to get interesting information using a combination of optical investigation and electrical noise measurement in time and spectral domain. It will be revealed that a direct correlation between noise and photon emission exists and the results related to several defect spots are presented in detail in this paper.

  15. Charged Semiconductor Defects Structure, Thermodynamics and Diffusion

    CERN Document Server

    Seebauer, Edmund G

    2009-01-01

    The technologically useful properties of a solid often depend upon the types and concentrations of the defects it contains. Not surprisingly, defects in semiconductors have been studied for many years, in many cases with a view towards controlling their behavior through various forms of "defect engineering." For example, in the bulk, charging significantly affects the total concentration of defects that are available to mediate phenomena such as solid-state diffusion. Surface defects play an important role in mediating surface mass transport during high temperature processing steps such as epitaxial film deposition, diffusional smoothing in reflow, and nanostructure formation in memory device fabrication. Charged Semiconductor Defects details the current state of knowledge regarding the properties of the ionized defects that can affect the behavior of advanced transistors, photo-active devices, catalysts, and sensors. Features: Group IV, III-V, and oxide semiconductors; Intrinsic and extrinsic defects; and, P...

  16. Singularities of 28Si electrical activation in a single crystal and epitaxial GaAs under radiation annealing

    International Nuclear Information System (INIS)

    Ardyshev, V.M.; Ardyshev, M.V.; Khludkov, S.S.

    2000-01-01

    Using the voltage-capacitance characteristics method, the concentration profiles of 28 Si that is implanted in monocrystal and epitaxial GaAs after fast thermal annealing (FTA) (825, 870, 950 deg C, 12 s) have been studied; using Van-der-Paw method, the electron Hall mobility temperature dependence in the range of 70-400 K has been measured. Unlike thermal annealing (800 deg C, 30 min), the silicon diffusion depth redistribution into GaAs is shown to occur for both types of material. The coefficient of diffusion of Si in the single crystal is 2 times greater, but the electrical activation efficiency is somewhat less than in the epitaxial GaAs for each of the temperatures of FTA. The analysis of the temperature dependence of the electron mobility in ion-implanted layers after FTA gives the evidence about the significantly lower concentration of defects restricting the mobility in comparison with results obtained at thermal annealing during 30 min [ru

  17. Electron transport in ethanol & methanol absorbed defected graphene

    Science.gov (United States)

    Dandeliya, Sushmita; Srivastava, Anurag

    2018-05-01

    In the present paper, the sensitivity of ethanol and methanol molecules on surface of single vacancy defected graphene has been investigated using density functional theory (DFT). The changes in structural and electronic properties before and after adsorption of ethanol and methanol were analyzed and the obtained results show high adsorption energy and charge transfer. High adsorption happens at the active site with monovacancy defect on graphene surface. Present work confirms that the defected graphene increases the surface reactivity towards ethanol and methanol molecules. The presence of molecules near the active site affects the electronic and transport properties of defected graphene which makes it a promising choice for designing methanol and ethanol sensor.

  18. Ultraviolet-endonuclease activity in cell extracts of Saccharomyces cerevisiae mutants defective in excision of pyrimidine dimers

    International Nuclear Information System (INIS)

    Bekker, M.L.; Kaboev, O.K.; Akhmedov, A.T.; Luchkina, L.A.

    1980-01-01

    Cell-free extracts of ultraviolet-sensitive mutants of Saccharomyces cerevisiae defective in excision of pyrimidine dimers, rad1, rad2, rad3, rad4, rad10, and rad16, as well as the extracts of the wild-type strain RAD+, display ultraviolet-endonuclease activity

  19. Electrically and hybrid-induced muscle activations: effects of muscle size and fiber type

    Directory of Open Access Journals (Sweden)

    Kelly Stratton

    2016-07-01

    Full Text Available The effect of three electrical stimulation (ES frequencies (10, 35, and 50 Hz on two muscle groups with different proportions of fast and slow twitch fibers (abductor pollicis brevis (APB and vastus lateralis (VL was explored. We evaluated the acute muscles’ responses individually and during hybrid activations (ES superimposed by voluntary activations. Surface electromyography (sEMG and force measurements were evaluated as outcomes. Ten healthy adults (mean age: 24.4 ± 2.5 years participated after signing an informed consent form approved by the university Institutional Review Board. Protocols were developed to: 1 compare EMG activities during each frequency for each muscle when generating 25% Maximum Voluntary Contraction (MVC force, and 2 compare EMG activities during each frequency when additional voluntary activation was superimposed over ES-induced 25% MVC to reach 50% and 75% MVC. Empirical mode decomposition (EMD was utilized to separate ES artifacts from voluntary muscle activation. For both muscles, higher stimulation frequency (35 and 50Hz induced higher electrical output detected at 25% of MVC, suggesting more recruitment with higher frequencies. Hybrid activation generated proportionally less electrical activity than ES alone. ES and voluntary activations appear to generate two different modes of muscle recruitment. ES may provoke muscle strength by activating more fatiguing fast acting fibers, but voluntary activation elicits more muscle coordination. Therefore, during the hybrid activation, less electrical activity may be detected due to recruitment of more fatigue-resistant deeper muscle fibers, not reachable by surface EMG.

  20. Defect-driven inhomogeneities in Ni /4H-SiC Schottky barriers

    Science.gov (United States)

    Tumakha, S.; Ewing, D. J.; Porter, L. M.; Wahab, Q.; Ma, X.; Sudharshan, T. S.; Brillson, L. J.

    2005-12-01

    Nanoscale depth-resolved cathodoluminescence spectroscopy (DRCLS) of Ni diode arrays on 4H-SiC epitaxial wafers reveals a striking correspondence between deep level defects and electrical transport measurements on a diode-by-diode basis. Current-voltage measurements display both ideal and nonideal diode characteristics due to multiple barriers within individual contacts. Near-interface DRCLS demonstrates the presence of three discrete midgap defect levels with 2.2, 2.45, and 2.65eV emission energies whose concentrations vary on a submicron scale among and within individual diodes, correlating with barrier inhomogeneity. These results also suggest that SiC native defect levels can account for the maximum range of n-type barrier heights.

  1. Defects induced ferromagnetism in Mn doped ZnO

    Energy Technology Data Exchange (ETDEWEB)

    Chattopadhyay, S.; Neogi, S.K. [Department of Physics, University of Calcutta, 92A P C Road, Kolkata 700009 (India); Sarkar, A. [Department of Physics, Bangabasi Morning College, Kolkata 700009 (India); Mukadam, M.D.; Yusuf, S.M. [Solid State Physics Division, Bhaba Atomic Research Centre, Mumbai 400085 (India); Banerjee, A. [Department of Physics, University of Calcutta, 92A P C Road, Kolkata 700009 (India); Bandyopadhyay, S., E-mail: sbaphy@caluniv.ac.i [Department of Physics, University of Calcutta, 92A P C Road, Kolkata 700009 (India)

    2011-02-15

    Single phase Mn doped (2 at%) ZnO samples have been synthesized by the solid-state reaction technique. Before the final sintering at 500 {sup o}C, the mixed powders have been milled for different milling periods (6, 24, 48 and 96 h). The grain sizes of the samples are very close to each other ({approx}32{+-}4 nm). However, the defective state of the samples is different from each other as manifested from the variation of magnetic properties and electrical resistivity with milling time. All the samples have been found to be ferromagnetic with clear hysteresis loops at room temperature. The maximum value for saturation magnetization (0.11 {mu}{sub B}/Mn atom) was achieved for 96 h milled sample. Electrical resistivity has been found to increase with increase in milling time. The most resistive sample bears the largest saturation magnetization. Variation of average positron lifetime with milling time bears a close similarity with that of the saturation magnetization. This indicates the key role played by open volume vacancy defects, presumably zinc vacancies near grain surfaces, in inducing ferromagnetic order in Mn doped ZnO. To attain optimum defect configuration favorable for ferromagnetism in this kind of samples proper choice of milling period and annealing conditions is required. - Research highlights: 2 at% Mn doped ZnO samples are single phase. All the samples exhibit ferromagnetism at room temperature. Correlation between saturation magnetization and positron annihilation lifetime established.

  2. Defects induced ferromagnetism in Mn doped ZnO

    International Nuclear Information System (INIS)

    Chattopadhyay, S.; Neogi, S.K.; Sarkar, A.; Mukadam, M.D.; Yusuf, S.M.; Banerjee, A.; Bandyopadhyay, S.

    2011-01-01

    Single phase Mn doped (2 at%) ZnO samples have been synthesized by the solid-state reaction technique. Before the final sintering at 500 o C, the mixed powders have been milled for different milling periods (6, 24, 48 and 96 h). The grain sizes of the samples are very close to each other (∼32±4 nm). However, the defective state of the samples is different from each other as manifested from the variation of magnetic properties and electrical resistivity with milling time. All the samples have been found to be ferromagnetic with clear hysteresis loops at room temperature. The maximum value for saturation magnetization (0.11 μ B /Mn atom) was achieved for 96 h milled sample. Electrical resistivity has been found to increase with increase in milling time. The most resistive sample bears the largest saturation magnetization. Variation of average positron lifetime with milling time bears a close similarity with that of the saturation magnetization. This indicates the key role played by open volume vacancy defects, presumably zinc vacancies near grain surfaces, in inducing ferromagnetic order in Mn doped ZnO. To attain optimum defect configuration favorable for ferromagnetism in this kind of samples proper choice of milling period and annealing conditions is required. - Research highlights: → 2 at% Mn doped ZnO samples are single phase. → All the samples exhibit ferromagnetism at room temperature. → Correlation between saturation magnetization and positron annihilation lifetime established.

  3. Defect properties of CuCrO2: A density functional theory calculation

    International Nuclear Information System (INIS)

    Fang Zhi-Jie; Zhu Ji-Zhen; Zhou Jiang; Mo Man

    2012-01-01

    Using the first-principles methods, we study the formation energetics properties of intrinsic defects, and the charge doping properties of extrinsic defects in transparent conducting oxides CuCrO 2 . Intrinsic defects, some typical acceptor-type, and donor-type extrinsic defects in their relevant charge state are considered. By systematically calculating the formation energies and transition energy, the results of calculation show that, V Cu , O i , and O Cu are the relevant intrinsic defects in CuCrO 2 ; among these intrinsic defects, V Cu is the most efficient acceptor in CuCrO 2 . It is found that all the donor-type extrinsic defects have difficulty in inducing n-conductivity in CuCrO 2 because of their deep transition energy level. For all the acceptor-type extrinsic defects, substituting Mg for Cr is the most prominent doping acceptor with relative shallow transition energy levels in CuCrO 2 . Our calculation results are expected to be a guide for preparing promising n-type and p-type materials in CuCrO 2 . (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  4. Preferential repair of ionizing radiation-induced damage in the transcribed strand of an active human gene is defective in Cockayne syndrome

    International Nuclear Information System (INIS)

    Leadon, S.A.; Copper, P.K.

    1993-01-01

    Cells from patients with Cockayne syndrome (CS), which are sensitive to killing by UV although overall damage removal appears normal, are specifically defective in repair of UV damage in actively transcribe genes. Because several CS strains display cross-sensitivity to killing by ionizing radiation, the authors examined whether ionizing radiation-induced damage in active genes is preferentially repaired by normal cells and whether the radiosensitivity of CS cells can be explained by a defect in this process. They found that ionizing radiation-induced damage was repaired more rapidly in the transcriptionally active metallothionein IIA (MTIIA) gene than in the inactive MTIIB gene or in the genome overall in normal cells as a result of faster repair on the transcribed strand of MTIIA. Cells of the radiosensitive CS strain CS1AN are completely defective in this strand-selective repair of ionizing radiation-induced damage, although their overall repair rate appears normal. CS3BE cells, which are intermediate in radiosensitivity, do exhibit more rapid repair of the transcribed strand but at a reduced rate compared to normal cells. Xeroderma pigmentosum complementation group A cells, which are hypersensitive to UV light because of a defect in the nucleotide excision repair pathway but do not show increased sensitivity to ionizing radiation, preferentially repair ionizing radiation-induced damage on the transcribed strand of MTIIA. Thus, the ability to rapidly repair ionizing radiation-induced damage in actively transcribing genes correlates with cell survival. The results extend the generality of preferential repair in active genes to include damage other than bulky lesions

  5. Reconstruction of fingers after electrical injury using lateral tarsal artery flap

    Directory of Open Access Journals (Sweden)

    Zhang MH

    2017-07-01

    Full Text Available Minghua Zhang, Mitao Huang, Pihong Zhang, Pengfei Liang, Licheng Ren, Jizhang Zeng, Jie Zhou, Xiong Liu, Tinghong Xie, Xiaoyuan Huang Department of Burns Reconstruction Surgery, Xiangya Hospital, Central South University, Changsha, Hunan, People’s Republic of China Objective: Electrical injuries to the fingers account for the majority of total severe burns that occur each year. While several types of flaps have been used in covering finger defects, all have limitations or disadvantages. The purpose of this study was to introduce our clinical experiences of using the lateral tarsal artery (LTA flap to successfully restore fingers after electrical injury.Patients and methods: From 2005 to 2012, 10 patients with 14 severe electrical burns to their fingers, including six thumbs and four index and four middle fingers, were treated with LTA flap. The wound size ranged from 2.0×3.0 cm to 3.5×5.0 cm. The flap with free tendon graft was used to repair the tendon defect in four cases, free nerve graft was used to repair the feeling defect in two cases, and the flap with nerve was used to repair the feeling defect in two cases. All the patients were followed up for 3 months to 2 years.Results: All skin flaps adhered successfully and there were no complications. All patients were satisfied with the esthetic appearance and functional outcome of the finger reconstruction.Conclusion: LTA flap is a reliable method to restore fingers after severe electrical injuries. Keywords: electrical injuries to fingers, lateral tarsal artery flap

  6. In-situ volumetric topography of IC chips for defect detection using infrared confocal measurement with active structured light

    International Nuclear Information System (INIS)

    Chen, Liang-Chia; Le, Manh-Trung; Phuc, Dao Cong; Lin, Shyh-Tsong

    2014-01-01

    The article presents the development of in-situ integrated circuit (IC) chip defect detection techniques for automated clipping detection by proposing infrared imaging and full-field volumetric topography. IC chip inspection, especially held during or post IC packaging, has become an extremely critical procedure in IC fabrication to assure manufacturing quality and reduce production costs. To address this, in the article, microscopic infrared imaging using an electromagnetic light spectrum that ranges from 0.9 to 1.7 µm is developed to perform volumetric inspection of IC chips, in order to identify important defects such as silicon clipping, cracking or peeling. The main difficulty of infrared (IR) volumetric imaging lies in its poor image contrast, which makes it incapable of achieving reliable inspection, as infrared imaging is sensitive to temperature difference but insensitive to geometric variance of materials, resulting in difficulty detecting and quantifying defects precisely. To overcome this, 3D volumetric topography based on 3D infrared confocal measurement with active structured light, as well as light refractive matching principles, is developed to detect defects the size, shape and position of defects in ICs. The experimental results show that the algorithm is effective and suitable for in-situ defect detection of IC semiconductor packaging. The quality of defect detection, such as measurement repeatability and accuracy, is addressed. Confirmed by the experimental results, the depth measurement resolution can reach up to 0.3 µm, and the depth measurement uncertainty with one standard deviation was verified to be less than 1.0% of the full-scale depth-measuring range. (paper)

  7. Electrical properties of gallium arsenide irradiated with electrons and neutrons

    International Nuclear Information System (INIS)

    Kol'chenko, T.I.; Lomako, V.M.

    1975-01-01

    A study was made of changes in the electrical properties of GaAs doped with Te, S, Se, Si, Ge, Sn (n 0 approximately 10 16 -10 18 cm -3 ) and irradiated either with 2.5-28 MeV electrons or with fast reactor neutrons. An analysis of changes in the electron density indicated that the rate of carrier removal by electron bombardment was independent of the dopant but was governed by isolated radiation defects. The change in the mobility due to irradiation with 2.5-10 MeV electrons was also governed by isolated defects. When the electron energy was increased to 28 MeV the main contribution to the change in the mobility was made by defect clusters. In the neutron-irradiation case the changes in the carrier density and mobility were mainly due to defect clusters and the nature of changes in the electrical properties was again independent of the dopant

  8. Radiation defects in electron-irradiated InP crystals

    International Nuclear Information System (INIS)

    Brailovskii, E.Yu.; Karapetyan, F.K.; Megela, I.G.; Tartachnik, V.P.

    1982-01-01

    The results are presented of formation and annealing of defects in InP crystals at 1 to 50 MeV electron irradiation. The recovery of electrical properties in the range of 77 to 970 K during annealing processes is studied. Five low temperature annealing states in n-InP and the reverse annealing in p-InP are observed at 77 to 300 K. Four annealing stages at temperatures higher than 300 K are present. When the electron energy is increased more complicated thermostable defects are formed, and at 50 MeV electron energy besides of the point defect clusters are formed, which anneal at temperatures of 800 to 970 K. It is shown that the peculiarities of the Hall mobility at irradiation and annealing are caused by the scattering centres E/sub c/ - 0.2 eV. The 'limiting' position of the Fermi level in electron irradiated InP crystals is discussed. (author)

  9. Radiation defects in electron-irradiated InP crystals

    Energy Technology Data Exchange (ETDEWEB)

    Brailovskii, E.Yu.; Karapetyan, F.K.; Megela, I.G.; Tartachnik, V.P. (AN Ukrainskoj SSR, Kiev. Inst. Yadernykh Issledovanij)

    1982-06-16

    The results are presented of formation and annealing of defects in InP crystals at 1 to 50 MeV electron irradiation. The recovery of electrical properties in the range of 77 to 970 K during annealing processes is studied. Five low temperature annealing states in n-InP and the reverse annealing in p-InP are observed at 77 to 300 K. Four annealing stages at temperatures higher than 300 K are present. When the electron energy is increased more complicated thermostable defects are formed, and at 50 MeV electron energy besides of the point defect clusters are formed, which anneal at temperatures of 800 to 970 K. It is shown that the peculiarities of the Hall mobility at irradiation and annealing are caused by the scattering centres E/sub c/ - 0.2 eV. The 'limiting' position of the Fermi level in electron irradiated InP crystals is discussed.

  10. Tuning the relative concentration ratio of bulk defects to surface defects in TiO2 nanocrystals leads to high photocatalytic efficiency.

    Science.gov (United States)

    Kong, Ming; Li, Yuanzhi; Chen, Xiong; Tian, Tingting; Fang, Pengfei; Zheng, Feng; Zhao, Xiujian

    2011-10-19

    TiO(2) nanocrystals with tunable bulk/surface defects were synthesized and characterized with TEM, XRD, BET, positron annihilation, and photocurrent measurements. The effect of defects on photocatalytic activity was studied. It was found for the first time that decreasing the relative concentration ratio of bulk defects to surface defects in TiO(2) nanocrystals could significantly improve the separation efficiency of photogenerated electrons and holes, thus significantly enhancing the photocatalytic efficiency.

  11. Association of time of occurrence of electrical heart storms with environmental physical activity.

    Science.gov (United States)

    Stoupel, Eliiyahu; Kusniec, Jairo; Golovchiner, Gregory; Abramson, Evgeny; Kadmon, Udi; Strasberg, Boris

    2014-08-01

    Many publications in recent decades have reported a temporal link between medical events and environmental physical activity. The aim of this study was to analyze the time of occurrence of electrical heart storms against levels of cosmological parameters. The sample included 82 patients (71 male) with ischemic cardiomyopathy treated with an implantable cardioverter defibrillator at a tertiary medical center in 1999-2012 (5,114 days). The time of occurrence of all electrical heart storms, defined as three or more events of ventricular tachycardia or ventricular fibrillation daily, was recorded from the defibrillator devices. Findings were analyzed against data on solar, geomagnetic, and cosmic ray (neutron) activity for the same time period obtained from space institutions in the United States and Russia. Electrical storms occurred in all months of the year, with a slight decrease in July, August, and September. Most events took place on days with lower-than-average levels of solar and geomagnetic activity and higher-than-average levels of cosmic ray (neutron) activity. There was a significant difference in mean daily cosmic ray activity between the whole observation period and the days of electrical storm activity (P = 0.0001). These data extend earlier findings on the association of the timing of cardiac events and space weather parameters to the most dangerous form of cardiac arrhythmia-electric storms. Further studies are needed to delineate the pathogenetic mechanism underlying this association. ©2014 Wiley Periodicals, Inc.

  12. Effects of electric stimulation of the hunger center in the lateral hypothalamus on slow electric activity and spike activity of fundal and antral stomach muscles in rabbits under conditions of hunger and satiation.

    Science.gov (United States)

    Kromin, A A; Zenina, O Yu

    2013-09-01

    In chronic experiments on rabbits, the effect of electric stimulation of the hunger center in the lateral hypothalamus on myoelectric activity of the fundal and antral parts of the stomach was studied under conditions of hunger and satiation in the absence of food. Stimulation of the lateral hypothalamus in rabbits subjected to 24-h food deprivation and in previously fed rabbits produced incessant seeking behavior, which was followed by reorganization of the structure of temporal organization of slow wave electric activity of muscles of the stomach body and antrum specific for hungry and satiated animals. Increased hunger motivation during electric stimulation of the lateral hypothalamus manifested in the structure of temporal organization of slow wave electric activity of the stomach body and antrum muscles in rabbits subjected to 24-h food deprivation in the replacement of bimodal distribution of slow wave periods to a trimodal type typical of 2-day deprivation, while transition from satiation to hunger caused by electric stimulation of the lateral hypothalamus was associated with a shift from monomodal distributions of slow wave periods to a bimodal type typical of 24-h deprivation. Reorganization of the structure of temporal organization of slow wave electric activity of the stomach body and antrum muscles during electric stimulation of the lateral hypothalamus was determined by descending inhibitory influences of food motivational excitation on activity of the myogenic pacemaker of the lesser curvature of the stomach.

  13. Point defects and atomic transport in crystals

    International Nuclear Information System (INIS)

    Lidiard, A.B.

    1981-02-01

    There are two principle aspects to the theory of atomic transport in crystals as caused by the action of point defects, namely (1) the calculation of relevant properties of the point defects (energies and other thermodynamic characteristics of the different possible defects, activation energies and other mobility parameters) and (2) the statistical mechanics of assemblies of defects, both equilibrium and non-equilibrium assemblies. In the five lectures given here both these aspects are touched on. The first two lectures are concerned with the calculation of relevant point defect properties, particularly in ionic crystals. The first lecture is more general, the second is concerned particularly with some recent calculations of the free volumes of formation of defects in various ionic solids; these solve a rather long-standing problem in this area. The remaining three lectures are concerned with the kinetic theory of defects mainly in relaxation, drift and diffusion situations

  14. Nonstoichiometric defects in GaAs and the EL2 bandwagon

    Science.gov (United States)

    Lagowski, J.; Gatos, H. C.

    1985-09-01

    In the present paper, an attempt is made to formulate a common framework for a discussion of nonstoichiometric defects, especially EL2 and dislocations. An outline is provided of the most important settled and unsettled issues, taking into account not only fundamental interests, but also urgent needs in advancing IC technology. Attention is given to stoichiometry-controlled compensation, the expected role of melt stoichiometry in electrical conductivity for the basic atomic disorders, defect equilibria-dislocations and EL2, and current issues pertaining to the identification of EL2. It is concluded that nonstoichiometric defects play a critical role in the electronic properties of GaAs and its electronic applications. Very significant progress has been recently made in learning how to adjust melt stoichiometry in order to maximize its beneficial effects and minimize its detrimental ones.

  15. Active Learning in Neuroscience: A Manipulative to Simulate Visual Field Defects

    Science.gov (United States)

    Li, Andrew Yue-Lin; Carvalho, Helena

    2016-01-01

    Prevalent in 20-57% of stroke patients, visual field defects have been shown to impact quality of life. Studies have shown increased risk of falling, ambulatory difficulties, impaired reading ability, and feelings of panic in crowded or unfamiliar places in patients with visual field defects. Rehabilitation, independence, and mental health may…

  16. Structural and electronic properties of zigzag InP nanoribbons with Stone–Wales type defects

    International Nuclear Information System (INIS)

    Longo, R C; Carrete, J; Varela, L M; Gallego, L J

    2016-01-01

    By means of density-functional-theoretic calculations, we investigate the structural and electronic properties of a hexagonal InP sheet and of hydrogen-passivated zigzag InP nanoribbons (ZInPNRs) with Stone–Wales (SW)-type defects. Our results show that the influence of this kind of defect is not limited to the defected region but it leads to the formation of ripples that extend across the systems, in keeping with the results obtained recently for graphene and silicene sheets. The presence of SW defects in ZInPNRs causes an appreciable broadening of the band gap and transforms the indirect-bandgap perfect ZInPNR into a direct-bandgap semiconductor. An external transverse electric field, regardless of its direction, reduces the gap in both the perfect and defective ZInPNRs. (paper)

  17. Activating basal-plane catalytic activity of two-dimensional MoS2 monolayer with remote hydrogen plasma

    KAUST Repository

    Cheng, Chia-Chin

    2016-09-10

    Two-dimensional layered transition metal dichalcogenide (TMD) materials such as Molybdenum disufide (MoS2) have been recognized as one of the low-cost and efficient electrocatalysts for hydrogen evolution reaction (HER). The crystal edges that account for a small percentage of the surface area, rather than the basal planes, of MoS2 monolayer have been confirmed as their active catalytic sites. As a result, extensive efforts have been developing in activating the basal planes of MoS2 for enhancing their HER activity. Here, we report a simple and efficient approach-using a remote hydrogen-plasma process-to creating S-vacancies on the basal plane of monolayer crystalline MoS2; this process can generate high density of S-vacancies while mainly maintaining the morphology and structure of MoS2 monolayer. The density of S-vacancies (defects) on MoS2 monolayers resulted from the remote hydrogen-plasma process can be tuned and play a critical role in HER, as evidenced in the results of our spectroscopic and electrical measurements. The H2-plasma treated MoS2 also provides an excellent platform for systematic and fundamental study of defect-property relationships in TMDs, which provides insights for future applications including electrical, optical and magnetic devices. © 2016 Elsevier Ltd.

  18. Modelling Defects Acceptors And Determination Of Electric Model From The Nyquist Plot And Bode In Thin Film CIGS

    Directory of Open Access Journals (Sweden)

    Demba Diallo

    2015-08-01

    Full Text Available Abstract The performance of the chalcopyrite material CuInGaSe2 CIGS used as an absorber layer in thin-film photovoltaic devices is significantly affected by the presence of native defects. Multivalent defects e.g. double acceptors or simple acceptor are important immaterial used in solar cell production in general and in chalcopyrite materials in particular. We used the thin film solar cell simulation software SCAPS to enable the simulation of multivalent defects with up to five different charge states.Algorithms enabled us to simulate an arbitrary number of possible states of load. The presented solution method avoids numerical inaccuracies caused by the subtraction of two almost equal numbers. This new modelling facility is afterwards used to investigate the consequences of the multivalent character of defects for the simulation of chalcopyrite based CIGS. The capacitance increase with the evolution of the number of defects C- f curves have found to have defect dependence.

  19. Repairing Nanoparticle Surface Defects.

    Science.gov (United States)

    Marino, Emanuele; Kodger, Thomas E; Crisp, Ryan W; Timmerman, Dolf; MacArthur, Katherine E; Heggen, Marc; Schall, Peter

    2017-10-23

    Solar devices based on semiconductor nanoparticles require the use of conductive ligands; however, replacing the native, insulating ligands with conductive metal chalcogenide complexes introduces structural defects within the crystalline nanostructure that act as traps for charge carriers. We utilized atomically thin semiconductor nanoplatelets as a convenient platform for studying, both microscopically and spectroscopically, the development of defects during ligand exchange with the conductive ligands Na 4 SnS 4 and (NH 4 ) 4 Sn 2 S 6 . These defects can be repaired via mild chemical or thermal routes, through the addition of L-type ligands or wet annealing, respectively. This results in a higher-quality, conductive, colloidally stable nanomaterial that may be used as the active film in optoelectronic devices. © 2017 The Authors. Published by Wiley-VCH Verlag GmbH & Co. KGaA.

  20. Emerging economic viability of grid defection in a northern climate using solar hybrid systems

    International Nuclear Information System (INIS)

    Kantamneni, Abhilash; Winkler, Richelle; Gauchia, Lucia; Pearce, Joshua M.

    2016-01-01

    High demand for photovoltaic (PV), battery, and small-scale combined heat and power (CHP) technologies are driving a virtuous cycle of technological improvements and cost reductions in off-grid electric systems that increasingly compete with the grid market. Using a case study in the Upper Peninsula of Michigan, this paper quantifies the economic viability of off-grid PV+battery+CHP adoption and evaluates potential implications for grid-based utility models. The analysis shows that already some households could save money by switching to a solar hybrid off-grid system in comparison to the effective electric rates they are currently paying. Across the region by 2020, 92% of seasonal households and ~75% of year-round households are projected to meet electricity demands with lower costs. Furthermore, ~65% of all Upper Peninsula single-family owner-occupied households will both meet grid parity and be able to afford the systems by 2020. The results imply that economic circumstances could spur a positive feedback loop whereby grid electricity prices continue to rise and increasing numbers of customers choose alternatives (sometimes referred to as a “utility death spiral”), particularly in areas with relatively high electric utility rates. Utility companies and policy makers must take the potential for grid defection seriously when evaluating energy supply strategies. - Highlights: •Quantifies the economic viability of off-grid hybrid photovoltaic (PV) systems. •PV is backed up with batteries and combined heat and power (CHP). •Case study in Michigan by household size (energy demand) and income. •By 2020, majority of single-family owner-occupied households can defect. •To prevent mass-scale grid defection policies needed for grid-tied PV systems.

  1. The distally-based island ulnar artery perforator flap for wrist defects

    Directory of Open Access Journals (Sweden)

    Karki Durga

    2007-01-01

    Full Text Available Background: Reconstruction of soft tissue defects around the wrist with exposed tendons, joints, nerves and bone represents a challenge to plastic surgeons, and such defects necessitate flap coverage to preserve hand functions and to protect its vital structures. We evaluated the use of a distally-based island ulnar artery perforator flap in patients with volar soft tissue defects around the wrist. Materials and Methods: Between June 2004 and June 2006, seven patients of soft tissue defects on the volar aspect of the wrist underwent distally-based island ulnar artery perforator flap. Out of seven patients, five were male and two patients were female. This flap was used in the reconstruction of the post road traffic accident defects in four patients and post electric burn defects in three patients. Flap was raised on one or two perforators and was rotated to 180°. Results: All flaps survived completely. Donor sites were closed primarily without donor site morbidity. Conclusion: The distally-based island Ulnar artery perforator flap is convenient, reliable, easy to manage and is a single-stage technique for reconstructing soft tissue defects of the volar aspect of the wrist. Early use of this flap allows preservation of vital structures, decreases morbidity and allows for early rehabilitation.

  2. Radiation defect distribution in silicon irradiated with 600 keV electrons

    International Nuclear Information System (INIS)

    Hazdra, P.; Dorschner, H.

    2003-01-01

    Low-doped n-type float zone silicon was irradiated with 600 keV electrons to fluences from 2x10 13 to 1x10 15 cm -2 . Radiation defects, their introduction rates and full-depth profiles were measured by two complementary methods - the capacitance deep level spectroscopy and the high-voltage current transient spectroscopy. Results show that, in the vicinity of the anode junction, the profile of vacancy-related defect centers is strongly influenced by electric field and an excessive generation of vacancies. In the bulk, the slope of the profile can be derived from the distribution of absorbed dose taking into the account the threshold energy necessary for Frenkel pair formation and the dependency of the defect introduction rate on electron energy

  3. Influence of radiation induced defect clusters on silicon particle detectors

    International Nuclear Information System (INIS)

    Junkes, Alexandra

    2011-10-01

    rich material the defect transforms (V 3 activation energy for migration E a = 1.77 ± 0.08 eV) to the L defect, which can be assigned to the V 3 O defect. In the second part of this work, it is demonstrated that the radiation induced effective doping concentration can be attributed to the generation of three deep acceptors (H(116K), H(140K), H(151K)), two donors (BD defect and E(30K)) and the vacancyphosphorus defect VP. The reverse annealing of the effective doping concentration is presented for samples irradiated with neutrons for fluences up to Φ=10 15 cm -2 . From defect concentrations it is possible to reproduce the effective doping concentration as extracted from capacitance-voltage characteristics. The last part of this work deals with the characterisation of Float Zone pad sensors in the frame of the CMS tracker upgrade programme. Due to a new production process, several material defects were introduced in the sensors. They explain unexpected electrical properties in thin sensors. (orig.)

  4. Influence of radiation induced defect clusters on silicon particle detectors

    Energy Technology Data Exchange (ETDEWEB)

    Junkes, Alexandra

    2011-10-15

    exhibits a bistability, as does the leakage current. In oxygen rich material the defect transforms (V{sub 3} activation energy for migration E{sub a} = 1.77 {+-} 0.08 eV) to the L defect, which can be assigned to the V{sub 3}O defect. In the second part of this work, it is demonstrated that the radiation induced effective doping concentration can be attributed to the generation of three deep acceptors (H(116K), H(140K), H(151K)), two donors (BD defect and E(30K)) and the vacancyphosphorus defect VP. The reverse annealing of the effective doping concentration is presented for samples irradiated with neutrons for fluences up to {phi}=10{sup 15} cm{sup -2}. From defect concentrations it is possible to reproduce the effective doping concentration as extracted from capacitance-voltage characteristics. The last part of this work deals with the characterisation of Float Zone pad sensors in the frame of the CMS tracker upgrade programme. Due to a new production process, several material defects were introduced in the sensors. They explain unexpected electrical properties in thin sensors. (orig.)

  5. T & I--Electric Motors. Kit No. 621. Instructor's Manual and Student Learning Activity Guide.

    Science.gov (United States)

    Bomar, William

    This instructor's manual and student learning activity guide comprise a kit for trade and industrial education (T & I) activities on electric motors. Purpose stated for the activities is to teach the student the four basic types of electric motors, the advantages and disadvantages of each, the types of jobs each can perform, and how to disassemble…

  6. Topological defects in confined populations of spindle-shaped cells

    Science.gov (United States)

    Duclos, Guillaume; Erlenkämper, Christoph; Joanny, Jean-François; Silberzan, Pascal

    2017-01-01

    Most spindle-shaped cells (including smooth muscles and sarcomas) organize in vivo into well-aligned `nematic’ domains, creating intrinsic topological defects that may be used to probe the behaviour of these active nematic systems. Active non-cellular nematics have been shown to be dominated by activity, yielding complex chaotic flows. However, the regime in which live spindle-shaped cells operate, and the importance of cell-substrate friction in particular, remains largely unexplored. Using in vitro experiments, we show that these active cellular nematics operate in a regime in which activity is effectively damped by friction, and that the interaction between defects is controlled by the system’s elastic nematic energy. Due to the activity of the cells, these defects behave as self-propelled particles and pairwise annihilate until all displacements freeze as cell crowding increases. When confined in mesoscopic circular domains, the system evolves towards two identical +1/2 disclinations facing each other. The most likely reduced positions of these defects are independent of the size of the disk, the cells’ activity or even the cell type, but are well described by equilibrium liquid crystal theory. These cell-based systems thus operate in a regime more stable than other active nematics, which may be necessary for their biological function.

  7. Electricity generation from wetlands with activated carbon bioanode

    Science.gov (United States)

    Sudirjo, E.; Buisman, C. J. N.; Strik, D. P. B. T. B.

    2018-03-01

    Paddy fields are potential non-tidal wetlands to apply Plant Microbial Fuel Cell (PMFC) technology. World widely they cover about 160 million ha of which 13.3 million ha is located in Indonesia. With the PMFC, in-situ electricity is generated by a bioanode with electrochemically active bacteria which use primary the organic matter supplied by the plant (e.g. as rhizodeposits and plant residues). One of limitations when installing a PMFC in a non-tidal wetland is the usage of “expensive” large amounts of electrodes to overcome the poor conductivity of wet soils. However, in a cultivated wetland such as rice paddy field, it is possible to alter soil composition. Adding a conductive carbon material such as activated carbon is believed to improve soil conductivity with minimum impact on plant vitality. The objective of this research was to study the effect of activated carbon as an alternative bioanode material on the electricity output and plants vitality. Lab result shows that activated carbon can be a potential alternative for bioanode material. It can continuously deliver current on average 1.54 A/m3 anode (0.26 A/m2 PGA or 66 mW/m2 PGA) for 98 days. Based on this result the next step is to do a test of this technology in the real paddy fields.

  8. Effect of disorder and defects in ion-implanted semiconductors optical and photothermal characterization

    CERN Document Server

    Willardson, R K; Christofides, Constantinos; Ghibaudo, Gerard

    1997-01-01

    Defects in ion-implanted semiconductors are important and will likely gain increased importance as annealing temperatures are reduced with successive IC generations. Novel implant approaches, such as MdV implantation, create new types of defects whose origin and annealing characteristics will need to be addressed. Publications in this field mainly focus on the effects of ion implantation on the material and the modification in the implanted layer after high temperature annealing. The editors of this volume and Volume 45 focus on the physics of the annealing kinetics of the damaged layer. An overview of characterization tehniques and a critical comparison of the information on annealing kinetics is also presented. Key Features * Provides basic knowledge of ion implantation-induced defects * Focuses on physical mechanisms of defect annealing * Utilizes electrical, physical, and optical characterization tools for processed semiconductors * Provides the basis for understanding the problems caused by the defects g...

  9. Study of the defect structure of ''pure'' and doped nonstoichiometric CeO2. Final report, January 1, 1965--May 31, 1977

    International Nuclear Information System (INIS)

    Blumenthal, R.N.

    1977-11-01

    The defect structure and transport properties of defects in nonstoichiometric oxides was studied based on their electrical and thermodynamic behavior. Similar studies were also made on doped-nonstoichiometric oxides to determine the effect of the ionic radii, valence and concentration of the dopant cation on the nonstoichiometric defect structure and the transport properties of these defects. The thermodynamic and electrical property study on ''pure'' and doped-nonstoichiometric CeO 2 /sub -x/ is reviewed. The combined study of the electrical conductivity, ionic transference, and thermodynamic measurements initiated on CaO-doped CeO 2 as a function of temperature, oxygen pressure and CaO content is discussed. The results of similar measurements on CeO 2 doped with other oxides (e.g., ThO 2 , Ta 2 O 5 , etc.) which have cations with different valences and ionic radii are also discussed. The primary objective of these studies was to determine the effect of ionic radii, valence and concentration of the dopant cation on (1) the nonstoichiometric behavior, (2) the thermodynamic quantities ΔantiH/sub O 2 / and ΔantiS/sub O 2 /, (3) the nonstoichiometric defect structure, (4) the electronic and ionic conductivities, and (5) the mobility of electrons and oxygen vacancies in doped CeO 2 /sub -x/

  10. Modelling water vapour permeability through atomic layer deposition coated photovoltaic barrier defects

    Energy Technology Data Exchange (ETDEWEB)

    Elrawemi, Mohamed, E-mail: Mohamed.elrawemi@hud.ac.uk [EPSRC Centre for Innovative Manufacturing in Advanced Metrology, School of Computing and Engineering, University of Huddersfield, Huddersfield (United Kingdom); Blunt, Liam; Fleming, Leigh [EPSRC Centre for Innovative Manufacturing in Advanced Metrology, School of Computing and Engineering, University of Huddersfield, Huddersfield (United Kingdom); Bird, David, E-mail: David.Bird@uk-cpi.com [Centre for Process Innovation Limited, Sedgefield, County Durham (United Kingdom); Robbins, David [Centre for Process Innovation Limited, Sedgefield, County Durham (United Kingdom); Sweeney, Francis [EPSRC Centre for Innovative Manufacturing in Advanced Metrology, School of Computing and Engineering, University of Huddersfield, Huddersfield (United Kingdom)

    2014-11-03

    Transparent barrier films such as Al{sub 2}O{sub 3} used for prevention of oxygen and/or water vapour permeation are the subject of increasing research interest when used for the encapsulation of flexible photovoltaic modules. However, the existence of micro-scale defects in the barrier surface topography has been shown to have the potential to facilitate water vapour ingress, thereby reducing cell efficiency and causing internal electrical shorts. Previous work has shown that small defects (≤ 3 μm lateral dimension) were less significant in determining water vapour ingress. In contrast, larger defects (≥ 3 μm lateral dimension) seem to be more detrimental to the barrier functionality. Experimental results based on surface topography segmentation analysis and a model presented in this paper will be used to test the hypothesis that the major contributing defects to water vapour transmission rate are small numbers of large defects. The model highlighted in this study has the potential to be used for gaining a better understanding of photovoltaic module efficiency and performance. - Highlights: • A model of water vapour permeation through barrier defects is presented. • The effect of the defects on the water vapour permeability is investigated. • Defect density correlates with water vapour permeability. • Large defects may dominate the permeation properties of the barrier film.

  11. Phosphorus-defect interactions during thermal annealing of ion implanted silicon

    Science.gov (United States)

    Keys, Patrick Henry

    Ion implantation of dopant atoms into silicon generates nonequilibrium levels of crystal defects that can lead to the detrimental effects of transient enhanced diffusion (TED), incomplete dopant activation, and p-n junction leakage. In order to control these effects, it is vital to have a clear understanding of dopant-defect interactions and develop models that account for these interactions. This research focuses on experimentally investigating and modeling the clustering of phosphorus dopant atoms with silicon interstitials. Damage recovery of 40keV Si+ implants in phosphorus doped wells is experimentally analyzed. The effects of background phosphorus concentration, self implant dose, and anneal temperature are investigated. Phosphorus concentrations ranging from 2.0 x 1017 to 4.0 x 1019 cm-3 and Si+ doses ranging from 5.0 x 1013 cm-2 to 2.0 x 1014 cm-2 are studied during 650-800°C anneals. A dramatic reduction in the number of interstitials bound in {311} defects with increasing phosphorus background concentration is observed. It is suggested that the reduction of interstitials in {311} defects at high phosphorus concentrations is due to the formation of phosphorus-interstitial clusters (PICs). The critical concentration for clustering (approximately 1.0 x 1019 cm-3 at 750°C) is strongly temperature dependent and in close agreement with the kink concentration of phosphorus diffusion. Information gained from these "well experiments" is applied to the study of direct phosphorus implantation. An experimental study is conducted on 40keV phosphorus implanted to a dose of 1.0 x 1014 cm-2 during 650-800°C anneals. Electrically inactive PICs are shown to form at concentrations below the solid solubility limit due to high interstitial supersaturations. Data useful for developing a model to accurately predict phosphorus diffusion under nonequilibrium conditions are extracted from the experimental results. A cluster-mediated diffusion model is developed using the

  12. A Study of Defect Behavior in Almandine Garnet

    Science.gov (United States)

    Geiger, C. A.; Brearley, A. J.; Dachs, E.; Tipplet, G.; Rossman, G. R.

    2016-12-01

    Transport and diffusion in crystals are controlled by defects. However, a good understanding of the defect types in many silicates, including garnet, is not at hand. We undertook a study on synthetic almandine, ideal end-member Fe3Al2Si3O12, to better understand its precise chemical and physical properties and defect behavior. Crystals were synthesized at high pressures and temperatures under different fO2 conditions using various starting materials with H2O and without. The almandine obtained came in polycrystalline and single-crystal form. The synthetic reaction products and crystals were carefully characterized using X-ray powder diffraction, electron microprobe and TEM analysis and with 57Fe Mössbauer, UV/VIS single-crystal absorption and IR single-crystal spectroscopy. Various possible intrinsic defects, such as the Frenkel, Schottky and site-disorder types, along with Fe3+, in both synthetic and natural almandine crystals, were analyzed based on model defects expressed in Kröger-Vink notation. Certain types of minor microscopic- to macroscopic-sized precipitation or exsolution phases, including some that are nanosized, that are observed in synthetic almandine (e.g., magnetite), as well as in more compositionally complex natural crystals (e.g., magnetite, rutile, ilmenite), may result from defect reactions. An explanation for their origin through minor amounts of defects in garnet has certain advantages over other models that have been put forth in the literature that assume strict garnet stoichiometry for their formation and/or open-system atomic transport over relatively long length scales. Physical properties, including magnetic, electrical conductivity and diffusion behavior, as well as the color, of almandine are also analyzed in terms of various possible model defects. It is difficult, if not impossible, to synthesize stoichiometric end-member almandine, Fe3Al2Si3O12, in the laboratory, as small amounts of extrinsic OH- and/or Fe3+ defects, for example

  13. Origin of the defects-induced ferromagnetism in un-doped ZnO single crystals

    Science.gov (United States)

    Zhan, Peng; Xie, Zheng; Li, Zhengcao; Wang, Weipeng; Zhang, Zhengjun; Li, Zhuoxin; Cheng, Guodong; Zhang, Peng; Wang, Baoyi; Cao, Xingzhong

    2013-02-01

    We clarified, in this Letter, that in un-doped ZnO single crystals after thermal annealing in flowing argon, the defects-induced room-temperature ferromagnetism was originated from the surface defects and specifically, from singly occupied oxygen vacancies denoted as F+, by the optical and electrical properties measurements as well as positron annihilation analysis. In addition, a positive linear relationship was observed between the ferromagnetism and the F+ concentration, which is in support with the above clarification.

  14. Preterm labor--modeling the uterine electrical activity from cellular level to surface recording.

    Science.gov (United States)

    Rihana, S; Marque, C

    2008-01-01

    Uterine electrical activity is correlated to the appearance of uterine contractions. forceful contractions appear at the end of term. Therefore, understanding the genesis and the propagation of uterine electrical activity may provide an efficient tool to diagnose preterm labor. Moreover, the control of uterine excitability seems to have important consequences in the control of preterm labor. Modeling the electrical activity in uterine tissue is thus an important step in understanding physiological uterine contractile mechanisms and to permit uterine EMG simulation. Our model presented in this paper, incorporates ion channel models at the cell level, the reaction diffusion equations at the tissue level and the spatiotemporal integration at the uterine EMG reconstructed level. This model validates some key physiological observation hypotheses concerning uterine excitability and propagation.

  15. Effect of recoiled O on damage regrowth and electrical properties of through-oxide implanted Si

    International Nuclear Information System (INIS)

    Sadana, D.K.; Wu, N.R.; Washburn, J.; Current, M.; Morgan, A.; Reed, D.; Maenpaa, M.

    1982-10-01

    High dose (4 to 7.5 x 10 15 cm -2 ) As implantations into p-type (100) Si have been carried out through a screen-oxide of thicknesses less than or equal to 775A and without screen oxide. The effect of recoiled O on damage annealing and electrical properties of the implanted layers has been investigated using a combination of the following techniques: TEM, RBS/MeV He + channeling, SIMS and Hall measurements in conjunction with chemical stripping and sheet resistivity measurements. The TEM results show that there is a dramatically different annealing behavior of the implantation damage for the through oxide implants (Case I) as compared to implants into bare silicon (Case II). Comparison of the structural defect profiles with O distributions obtained by SIMS demonstrated that retardation in the secondary damage growth in Case I can be directly related with the presence of O. Weak-beam TEM showed that a high density of fine defect clusters (less than or equal to 50A) were present both in Case I and Case II. The electrical profiles showed only 30% of the total As to be electrically active. The structural and electrical results have been explained by a model that entails As-O, Si-O and As-As complex formation and their interaction with the dislocations

  16. Distinction between the Poole-Frenkel and tunneling models of electric-field-stimulated carrier emission from deep levels in semiconductors

    International Nuclear Information System (INIS)

    Ganichev, S. D.; Ziemann, E.; Prettl, W.; Yassievich, I. N.; Istratov, A. A.; Weber, E. R.

    2000-01-01

    The enhancement of the emission rate of charge carriers from deep-level defects in electric field is routinely used to determine the charge state of the defects. However, only a limited number of defects can be satisfactorily described by the Poole-Frenkel theory. An electric field dependence different from that expected from the Poole-Frenkel theory has been repeatedly reported in the literature, and no unambiguous identification of the charge state of the defect could be made. In this article, the electric field dependencies of emission of carriers from DX centers in Al x Ga 1-x As:Te, Cu pairs in silicon, and Ge:Hg have been studied applying static and terahertz electric fields, and analyzed by using the models of Poole-Frenkel and phonon assisted tunneling. It is shown that phonon assisted tunneling and Poole-Frenkel emission are two competitive mechanisms of enhancement of emission of carriers, and their relative contribution is determined by the charge state of the defect and by the electric-field strength. At high-electric field strengths carrier emission is dominated by tunneling independently of the charge state of the impurity. For neutral impurities, where Poole-Frenkel lowering of the emission barrier does not occur, the phonon assisted tunneling model describes well the experimental data also in the low-field region. For charged impurities the transition from phonon assisted tunneling at high fields to Poole-Frenkel effect at low fields can be traced back. It is suggested that the Poole-Frenkel and tunneling models can be distinguished by plotting logarithm of the emission rate against the square root or against the square of the electric field, respectively. This analysis enables one to unambiguously determine the charge state of a deep-level defect. (c) 2000 The American Physical Society

  17. Electrically active induced energy levels and metastability of B and N vacancy-complexes in 4H–SiC

    Science.gov (United States)

    Igumbor, E.; Olaniyan, O.; Mapasha, R. E.; Danga, H. T.; Omotoso, E.; Meyer, W. E.

    2018-05-01

    Electrically active induced energy levels in semiconductor devices could be beneficial to the discovery of an enhanced p or n-type semiconductor. Nitrogen (N) implanted into 4H–SiC is a high energy process that produced high defect concentrations which could be removed during dopant activation annealing. On the other hand, boron (B) substituted for silicon in SiC causes a reduction in the number of defects. This scenario leads to a decrease in the dielectric properties and induced deep donor and shallow acceptor levels. Complexes formed by the N, such as the nitrogen-vacancy centre, have been reported to play a significant role in the application of quantum bits. In this paper, results of charge states thermodynamic transition level of the N and B vacancy-complexes in 4H–SiC are presented. We explore complexes where substitutional N/N or B/B sits near a Si (V) or C (V) vacancy to form vacancy-complexes (NV, NV, NV, NV, BV, BV, BV and BV). The energies of formation of the N related vacancy-complexes showed the NV to be energetically stable close to the valence band maximum in its double positive charge state. The NV is more energetically stable in the double negative charge state close to the conduction band minimum. The NV on the other hand, induced double donor level and the NV induced a double acceptor level. For B related complexes, the BV and BV were energetically stable in their single positive charge state close to the valence band maximum. As the Fermi energy is varied across the band gap, the neutral and single negative charge states of the BV become more stable at different energy levels. B and N related complexes exhibited charge state controlled metastability behaviour.

  18. Selective interference with pacemaker activity by electrical dental devices.

    Science.gov (United States)

    Miller, C S; Leonelli, F M; Latham, E

    1998-01-01

    We sought to determine whether electromagnetic interference with cardiac pacemakers occurs during the operation of contemporary electrical dental equipment. Fourteen electrical dental devices were tested in vitro for their ability to interfere with the function of two Medtronics cardiac pacemakers (one a dual-chamber, bipolar Thera 7942 pacemaker, the other a single-chamber, unipolar Minix 8340 pacemaker). Atrial and ventricular pacemaker output and electrocardiographic activity were monitored by means of telemetry with the use of a Medtronics 9760/90 programmer. Atrial and ventricular pacing were inhibited by electromagnetic interference produced by the electrosurgical unit up to a distance of 10 cm, by the ultrasonic bath cleaner up to 30 cm, and by the magnetorestrictive ultrasonic scalers up to 37.5 cm. In contrast, operation of the amalgamator, electric pulp tester, composite curing light, dental handpieces, electric toothbrush, microwave oven, dental chair and light, ENAC ultrasonic instrument, radiography unit, and sonic scaler did not alter pacing rate or rhythm. These results suggest that certain electrosurgical and ultrasonic instruments may produce deleterious effects in medically fragile patients with cardiac pacemakers.

  19. Actively Controlling the Topological Transition of Dispersion Based on Electrically Controllable Metamaterials

    Directory of Open Access Journals (Sweden)

    Zhiwei Guo

    2018-04-01

    Full Text Available Topological transition of the iso-frequency contour (IFC from a closed ellipsoid to an open hyperboloid provides unique capabilities for controlling the propagation of light. However, the ability to actively tune these effects remains elusive, and the related experimental observations are highly desirable. Here, a tunable electric IFC in a periodic structure composed of graphene/dielectric multilayers is investigated by tuning the chemical potential of the graphene layer. Specially, we present the actively controlled transportation in two kinds of anisotropic zero-index media containing perfect electric conductor/perfect magnetic conductor impurities. Finally, by adding variable capacitance diodes into a two-dimensional transmission-line system, we present an experimental demonstration of the actively controlled magnetic topological transition of dispersion based on electrically controllable metamaterials. With the increase in voltage, we measure the different emission patterns from a point source inside the structure and observe the phase-transition process of IFCs. The realization of an actively tuned topological transition will open up a new avenue in the dynamical control of metamaterials.

  20. PHYSICAL AND ELECTRICAL PROPERTIES ENHANCEMENT OF RARE-EARTH DOPED-POTASSIUM SODIUM NIOBATE (KNN: A REVIEW

    Directory of Open Access Journals (Sweden)

    Akmal Mat Harttat Maziati

    2015-06-01

    Full Text Available Alkaline niobate mainly potassium sodium niobate, (KxNa1-x NbO3 (abreviated as KNN has long attracted attention as piezoelectric materials as its high Curie temperature (Tc and piezoelectric properties. The volatility of alkaline element (K, Na is, however detrimental to the stoichiometry of KNN, contributing to the failure to achieve high-density structure and lead to the formation of intrinsic defects. By partially doping of several rare-earth elements, the inherent defects could be improved significantly. Therefore, considerable attempts have been made to develop doped-KNN based ceramic materials with high electrical properties. In this paper, these research activities are reviewed, including dopants type and doping role in KNN perovskite structure.

  1. Vertebral defect, anal atresia, cardiac defect, tracheoesophageal fistula/esophageal atresia, renal defect, and limb defect association with Mayer-Rokitansky-Küster-Hauser syndrome in co-occurrence

    DEFF Research Database (Denmark)

    Bjørsum-Meyer, Thomas; Herlin, Morten; Qvist, Niels

    2016-01-01

    Background: The vertebral defect, anal atresia, cardiac defect, tracheoesophageal fistula/esophageal atresia, renal defect, and limb defect association and Mayer-Rokitansky-Küster-Hauser syndrome are rare conditions. We aimed to present two cases with the vertebral defect, anal atresia, cardiac...... defect, tracheoesophageal fistula/esophageal atresia, renal defect, and limb defect association and Mayer-Rokitansky-Küster-Hauser co-occurrence from our local surgical center and through a systematic literature search detect published cases. Furthermore, we aimed to collect existing knowledge...... in the embryopathogenesis and genetics in order to discuss a possible link between the vertebral defect, anal atresia, cardiac defect, tracheoesophageal fistula/esophageal atresia, renal defect, and limb defect association and Mayer-Rokitansky-Küster-Hauser syndrome. Case presentation: Our first case was a white girl...

  2. Pancreatic β-Cell Electrical Activity and Insulin Secretion: of Mice and Men

    Science.gov (United States)

    Rorsman, Patrik; Ashcroft, Frances M

    2018-01-01

    The pancreatic β-cell plays a key role in glucose homeostasis by secreting insulin, the only hormone capable of lowering the blood glucose concentration. Impaired insulin secretion results in the chronic hyperglycaemia that characterizes type 2 diabetes (T2DM), which currently afflicts >450 million people worldwide. The healthy β-cell acts as a glucose sensor matching its output to the circulating glucose concentration. It does so via metabolically induced changes in electrical activity, which culminate in an increase in the cytoplasmic Ca2+ concentration and initiation of Ca2+-dependent exocytosis of insulin-containing secretory granules. Here, we review recent advances in our understanding of the β-cell transcriptome, electrical activity and insulin exocytosis. We highlight salient differences between mouse and human β-cells, provide models of how the different ion channels contribute to their electrical activity and insulin secretion, and conclude by discussing how these processes become perturbed in T2DM. PMID:29212789

  3. Modelling of shrinkage cavity defects during the wheel and belt casting process

    International Nuclear Information System (INIS)

    Dablement, S; Mortensen, D; Fjaer, H; Lee, M; Grandfield, J; Savage, G; Nguyen, V

    2012-01-01

    Properzi continuous casting is a wheel and belt casting process used for producing aluminium wire rod which is essential to the making of electrical cables and over head lines. One of the main concerns of Properzi process users is to ensure good quality of the final product and to avoid cast defects especially the presence of shrinkage cavity. Numerical models developed with the Alsim software, which allows an automatic calculation of gap dependent heat transfer coefficients at the metal-mould interface due to thermal deformation, are used in order to get a better understanding on the shrinkage cavity formation. Models show the effect of process parameters on the cavity defect development and provide initial guidance for users in order to avoid this kind of casting defect.

  4. Birth Defects

    Science.gov (United States)

    A birth defect is a problem that happens while a baby is developing in the mother's body. Most birth defects happen during the first 3 months of ... in the United States is born with a birth defect. A birth defect may affect how the ...

  5. Point defects dynamics in a stress field

    International Nuclear Information System (INIS)

    Smetniansky de De Grande, Nelida.

    1989-01-01

    The dependence of anisotropic defect diffusion on stress is studied for a hexagonal close packed (hcp) material under irradiation and uniaxially stressed. The diffusion is described as a discrete process of thermally activated jumps. It is shown that the presence of an external stress field enhances the intrinsic anisotropic diffusion, being this variation determined by the defect dipole tensors' symmetry in the equilibrium and saddle point configurations. Also, the point defect diffusion equations to sinks, like edge dislocations and spherical cavities, are solved and the sink strengths are calculated. The conclusion is that the dynamics of the interaction between defects and sinks is controlled by the changes in diffusivity induced by stress fields. (Author) [es

  6. Noonan syndrome gain-of-function mutations in NRAS cause zebrafish gastrulation defects

    Directory of Open Access Journals (Sweden)

    Vincent Runtuwene

    2011-05-01

    Noonan syndrome is a relatively common developmental disorder that is characterized by reduced growth, wide-set eyes and congenital heart defects. Noonan syndrome is associated with dysregulation of the Ras–mitogen-activated-protein-kinase (MAPK signaling pathway. Recently, two mutations in NRAS were reported to be associated with Noonan syndrome, T50I and G60E. Here, we report a mutation in NRAS, resulting in an I24N amino acid substitution, that we identified in an individual bearing typical Noonan syndrome features. The I24N mutation activates N-Ras, resulting in enhanced downstream signaling. Expression of N-Ras-I24N, N-Ras-G60E or the strongly activating mutant N-Ras-G12V, which we included as a positive control, results in developmental defects in zebrafish embryos, demonstrating that these activating N-Ras mutants are sufficient to induce developmental disorders. The defects in zebrafish embryos are reminiscent of symptoms in individuals with Noonan syndrome and phenocopy the defects that other Noonan-syndrome-associated genes induce in zebrafish embryos. MEK inhibition completely rescued the activated N-Ras-induced phenotypes, demonstrating that these defects are mediated exclusively by Ras-MAPK signaling. In conclusion, mutations in NRAS from individuals with Noonan syndrome activated N-Ras signaling and induced developmental defects in zebrafish embryos, indicating that activating mutations in NRAS cause Noonan syndrome.

  7. Noonan syndrome gain-of-function mutations in NRAS cause zebrafish gastrulation defects

    Science.gov (United States)

    Runtuwene, Vincent; van Eekelen, Mark; Overvoorde, John; Rehmann, Holger; Yntema, Helger G.; Nillesen, Willy M.; van Haeringen, Arie; van der Burgt, Ineke; Burgering, Boudewijn; den Hertog, Jeroen

    2011-01-01

    SUMMARY Noonan syndrome is a relatively common developmental disorder that is characterized by reduced growth, wide-set eyes and congenital heart defects. Noonan syndrome is associated with dysregulation of the Ras–mitogen-activated-protein-kinase (MAPK) signaling pathway. Recently, two mutations in NRAS were reported to be associated with Noonan syndrome, T50I and G60E. Here, we report a mutation in NRAS, resulting in an I24N amino acid substitution, that we identified in an individual bearing typical Noonan syndrome features. The I24N mutation activates N-Ras, resulting in enhanced downstream signaling. Expression of N-Ras-I24N, N-Ras-G60E or the strongly activating mutant N-Ras-G12V, which we included as a positive control, results in developmental defects in zebrafish embryos, demonstrating that these activating N-Ras mutants are sufficient to induce developmental disorders. The defects in zebrafish embryos are reminiscent of symptoms in individuals with Noonan syndrome and phenocopy the defects that other Noonan-syndrome-associated genes induce in zebrafish embryos. MEK inhibition completely rescued the activated N-Ras-induced phenotypes, demonstrating that these defects are mediated exclusively by Ras-MAPK signaling. In conclusion, mutations in NRAS from individuals with Noonan syndrome activated N-Ras signaling and induced developmental defects in zebrafish embryos, indicating that activating mutations in NRAS cause Noonan syndrome. PMID:21263000

  8. Defect in the GTPase activating protein (GAP) function of eIF5 causes repression of GCN4 translation.

    Science.gov (United States)

    Antony A, Charles; Alone, Pankaj V

    2017-05-13

    In eukaryotes, the eIF5 protein plays an important role in translation start site selection by providing the GAP (GTPase activating protein) function. However, in yeast translation initiation fidelity defective eIF5 G31R mutant causes preferential utilization of UUG as initiation codon and is termed as Suppressor of initiation codon (Sui - ) phenotype due to its hyper GTPase activity. The eIF5 G31R mutant dominantly represses GCN4 expression and confers sensitivity to 3-Amino-1,2,4-Trizole (3AT) induced starvation. The down-regulation of the GCN4 expression (Gcn - phenotype) in the eIF5 G31R mutant was not because of leaky scanning defects; rather was due to the utilization of upUUG initiation codons at the 5' regulatory region present between uORF1 and the main GCN4 ORF. Copyright © 2017 Elsevier Inc. All rights reserved.

  9. Defects in TiO2 crystals produced by neutron irradiations at 20 K

    International Nuclear Information System (INIS)

    Okada, M.; Nakagawa, M.; Atobe, K.; Kawabata, Y.

    1994-01-01

    The single crystals rutile (TiO 2 ), cut parallel and perpendicular to the c-axis, are irradiated by reactor neutrons at 20 K (8.0x10 16 n/cm 2 ; E>0.1 MeV). By means of optical measurements an intense absorption band, which has a maximum peak near 1 μm (having FWHM similar 0.87 eV), is observed and is annealed out at about 220 K. Also, some kinds of defect centers can be distinguished by ESR measurements. The broad band has similar characteristics to that in reduced TiO 2 crystal, in which the band has a maximum peak at 1.5 μm. With heavy reduction, the intensity of the broad band enhances with increasing electrical conductivity. It has been proposed that the origin of the band in reduced crystals may be attributable to the absorption of donors due to the polaron effects. The evidence for the assignment to the defect in the irradiated crystals is obtained by optical, ESR, and electrical resistivity measurements. The results lead to quite a different origin for the irradiation produced defect centers. ((orig.))

  10. Electrical properties of indium arsenide irradiated with fast neutrons

    International Nuclear Information System (INIS)

    Kolin, N.G.; Osvenskii, V.B.; Rytova, N.S.; Yurova, E.S.

    1987-01-01

    A study was made of the influence of irradiation with fast reactor neutrons on electrical properties of indium arsenide samples with different dopant concentrations. The laws governing the formation and annealing of radiation defects in indium arsenide were found to be governed by the donor-acceptor interaction. Depending on the density of free carriers in the original crystal, irradiation could produce charged defects of predominantly donor or acceptor types. Donor defects in irradiated InAs samples were annealed practically completely, whereas a considerable fraction of residual acceptor defects was retained even after heat treatment at 900 degree C. The concentration of these residual acceptors depended on the electron density at the annealing temperature

  11. Extended deep level defects in Ge-condensed SiGe-on-Insulator structures fabricated using proton and helium implantations

    International Nuclear Information System (INIS)

    Kwak, D.W.; Lee, D.W.; Oh, J.S.; Lee, Y.H.; Cho, H.Y.

    2012-01-01

    SiGe-on-Insulator (SGOI) structures were created using the Ge condensation method, where an oxidation process is performed on the SiGe/Si structure. This method involves rapid thermal chemical vapor deposition and H + /He + ion-implantations. Deep level defects in these structures were investigated using deep level transient spectroscopy (DLTS) by varying the pulse injection time. According to the DLTS measurements, a deep level defect induced during the Ge condensation process was found at 0.28 eV above the valence band with a capture cross section of 2.67 × 10 −17 cm 2 , two extended deep levels were also found at 0.54 eV and 0.42 eV above the valence band with capture cross sections of 3.17 × 10 −14 cm 2 and 0.96 × 10 −15 cm 2 , respectively. In the SGOI samples with ion-implantation, the densities of the newly generated defects as well as the existing defects were decreased effectively. Furthermore, the Coulomb barrier heights of the extended deep level defects were drastically reduced. Thus, we suggest that the Ge condensation method with H + ion implantation could reduce deep level defects generated from the condensation and control the electrical properties of the condensed SiGe layers. - Highlights: ► We have fabricated low-defective SiGe-on-Insulator (SGOI) with implantation method. ► H + and He + -ions are used for ion-implantation method. ► We have investigated the deep level defects of SGOI layers. ► Ge condensation method using H + ion implantation could reduce extended defects. ► They could enhance electrical properties.

  12. Electrical conductivity study on polythiophenes films

    International Nuclear Information System (INIS)

    Youm, I.; Cadene, M.

    1994-10-01

    The electrical conduction mechanism of two classes of polythiophenes: polythiophene (PT) and poly(3-methylthiophene) (PMT) films containing various levels of doping counter-ions was investigated. The temperature dependence of electrical conductivity obeys the Mott equation based on variable range hopping. The dimension of the variable range hopping is correlated with the structure of the conducting polymer. It seems for these polymers that carrier transport via mobile conjugational defects does not play a detectable role. (author). 17 refs, 3 figs, 1 tab

  13. Defect-Induced Hedgehog Polarization States in Multiferroics

    Science.gov (United States)

    Li, Linze; Cheng, Xiaoxing; Jokisaari, Jacob R.; Gao, Peng; Britson, Jason; Adamo, Carolina; Heikes, Colin; Schlom, Darrell G.; Chen, Long-Qing; Pan, Xiaoqing

    2018-03-01

    Continuous developments in nanotechnology require new approaches to materials synthesis that can produce novel functional structures. Here, we show that nanoscale defects, such as nonstoichiometric nanoregions (NSNRs), can act as nano-building blocks for creating complex electrical polarization structures in the prototypical multiferroic BiFeO3 . An array of charged NSNRs are produced in BiFeO3 thin films by tuning the substrate temperature during film growth. Atomic-scale scanning transmission electron microscopy imaging reveals exotic polarization rotation patterns around these NSNRs. These polarization patterns resemble hedgehog or vortex topologies and can cause local changes in lattice symmetries leading to mixed-phase structures resembling the morphotropic phase boundary with high piezoelectricity. Phase-field simulations indicate that the observed polarization configurations are mainly induced by charged states at the NSNRs. Engineering defects thus may provide a new route for developing ferroelectric- or multiferroic-based nanodevices.

  14. Study of radiation defects by in-situ measurements of the Hall effect in narrow-gap semiconductors

    International Nuclear Information System (INIS)

    Favre, J.

    1990-01-01

    Semiconducting compounds of II-VI, III-V and IV-VI groups were irradiated in liquid hydrogen by high energy (0.7 to 2.7 MeV) electrons. The Hall coefficient and resistivity variations were measured in situ during irradiation. The doping by irradiation induced defects is of p-type in III-V group compounds, while n-type doping occurs in II-VI and IV-VI group materials. A semiconductor to insulator or reverse transition was observed under irradiation when the chemical potential crossed the band edges. In IV-VI group compounds the two successive transitions take place in initially p-type samples. A metastable behaviour, characteristic to strong compensation, appears in the vicinity of those semiconductor - insulator transitions in IV-VI compounds. The slope of free carrier concentration vs. fluence variation was analyzed. It was compared to defect creation rates, calculated in the framework of a cascade model. The charge state of created defects was deduced in this way. - In IV-VI group compounds, the presence of localized levels degenerated with the conduction band and, in PbTe, of additional defect associated levels in the forbidden gap, was demonstrated. Those results are consistent with the saturation of electron concentration increase at high fluence as well as with the analysis of annealing experiments. - In Hg 1-x Cd x Te compounds, the analysis of electron concentration versus fluence increase indicates that only mercury Frenkel pairs are electrically active. The variation with cadmium content of the defect associated level energy was deduced from the saturation values of the electron concentration [fr

  15. Improved model of activation energy absorption for different electrical breakdowns in semi-crystalline insulating polymers

    Science.gov (United States)

    Sima, Wenxia; Jiang, Xiongwei; Peng, Qingjun; Sun, Potao

    2018-05-01

    Electrical breakdown is an important physical phenomenon in electrical equipment and electronic devices. Many related models and theories of electrical breakdown have been proposed. However, a widely recognized understanding on the following phenomenon is still lacking: impulse breakdown strength which varies with waveform parameters, decrease in the breakdown strength of AC voltage with increasing frequency, and higher impulse breakdown strength than that of AC. In this work, an improved model of activation energy absorption for different electrical breakdowns in semi-crystalline insulating polymers is proposed based on the Harmonic oscillator model. Simulation and experimental results show that, the energy of trapped charges obtained from AC stress is higher than that of impulse voltage, and the absorbed activation energy increases with the increase in the electric field frequency. Meanwhile, the frequency-dependent relative dielectric constant ε r and dielectric loss tanδ also affect the absorption of activation energy. The absorbed activation energy and modified trap level synergistically determine the breakdown strength. The mechanism analysis of breakdown strength under various voltage waveforms is consistent with the experimental results. Therefore, the proposed model of activation energy absorption in the present work may provide a new possible method for analyzing and explaining the breakdown phenomenon in semi-crystalline insulating polymers.

  16. Freely migrating defects in ion-irradiated Cu3Au

    International Nuclear Information System (INIS)

    Wei, L.C.; Lang, E.; Flynn, C.P.; Averback, R.S.

    1999-01-01

    The efficiency of producing freely migrating vacancy defects in irradiated Cu 3 Au was examined using electrical resistivity measurements of radiation-induced ordering on highly perfect single-crystal films. Relative efficiencies for He, Ne, and Ar bombardments at different ion energy and specimen temperature were obtained. The ratio of the efficiencies of 0.6 MeV Ne to He increased with temperature from ∼0.25 at 340 K to a saturation value of ∼0.40 at 520 K. For Ar and He, the ratio increased from ∼0.11 at 360 K to ∼0.18 at 540 K. Estimates indicate that about half of all defects created in cascades are freely migrating. copyright 1999 American Institute of Physics

  17. Biomaterials with Antibacterial and Osteoinductive Properties to Repair Infected Bone Defects

    OpenAIRE

    Lu, Haiping; Liu, Yi; Guo, Jing; Wu, Huiling; Wang, Jingxiao; Wu, Gang

    2016-01-01

    The repair of infected bone defects is still challenging in the fields of orthopedics, oral implantology and maxillofacial surgery. In these cases, the self-healing capacity of bone tissue can be significantly compromised by the large size of bone defects and the potential/active bacterial activity. Infected bone defects are conventionally treated by a systemic/local administration of antibiotics to control infection and a subsequent implantation of bone grafts, such as autografts and allogra...

  18. Changes in intestinal electrical activity during ischaemia correlate to ...

    African Journals Online (AJOL)

    To study this, the electrical activity of the ileum in 14 adult male rabbits was recorded during ischaemia. At baseline, 60, 120 and 210 minutes of ischaemia, segments of bowel were resected for histopathologic evaluation. The BER frequency was determined using the Fast Fourier Transformation (FFT) spectral analysis.

  19. Quantitative evaluation of hidden defects in cast iron components using ultrasound activated lock-in vibrothermography.

    Science.gov (United States)

    Montanini, R; Freni, F; Rossi, G L

    2012-09-01

    This paper reports one of the first experimental results on the application of ultrasound activated lock-in vibrothermography for quantitative assessment of buried flaws in complex cast parts. The use of amplitude modulated ultrasonic heat generation allowed selective response of defective areas within the part, as the defect itself is turned into a local thermal wave emitter. Quantitative evaluation of hidden damages was accomplished by estimating independently both the area and the depth extension of the buried flaws, while x-ray 3D computed tomography was used as reference for sizing accuracy assessment. To retrieve flaw's area, a simple yet effective histogram-based phase image segmentation algorithm with automatic pixels classification has been developed. A clear correlation was found between the thermal (phase) signature measured by the infrared camera on the target surface and the actual mean cross-section area of the flaw. Due to the very fast cycle time (<30 s/part), the method could potentially be applied for 100% quality control of casting components.

  20. The atmospheric electric global circuit. [thunderstorm activity

    Science.gov (United States)

    Kasemir, H. W.

    1979-01-01

    The hypothesis that world thunderstorm activity represents the generator for the atmospheric electric current flow in the earth atmosphere between ground and the ionosphere is based on a close correlation between the magnitude and the diurnal variation of the supply current (thunderstorm generator current) and the load current (fair weather air-earth current density integrated over the earth surface). The advantages of using lightning survey satellites to furnish a base for accepting or rejecting the thunderstorm generator hypothesis are discussed.

  1. Description of radiation damage in diamond sensors using an effective defect model

    International Nuclear Information System (INIS)

    Kassel, Florian; Guthoff, Moritz; Dabrowski, Anne; Boer, Wim de

    2017-01-01

    The Beam Condition Monitoring Leakage (BCML) system is a beam monitoring device in the CMS experiment at the LHC consisting of 32 poly-crystalline (pCVD) diamond sensors. The BCML sensors, located in rings around the beam, are exposed to high particle rates originating from the colliding beams. These particles cause lattice defects, which act as traps for the ionized charge carrier leading to a reduced charge collection efficiency (CCE). The radiation induced CCE degradation was, however, much more severe than expected from low rate laboratory measurements. Measurement and simulations presented in this paper show that this discrepancy is related to the rate of incident particles. At high particle rates, the trapping rate of the ionization is strongly increased compared to the detrapping rate leading to an increased build-up of space charge. This space charge locally reduces the internal electric field increasing the trapping rate and hence reducing the CCE even further. In order to connect these macroscopic measurements with the microscopic defects acting as traps for the ionization charge, the TCAD simulation program SILVACO was used. It allows to introduce the defects as effective donor and acceptor levels, and can calculate the electric field from Transient Current Technique (TCT) signals and CCE as a function of the effective trap properties, like density, energy level, and trapping cross section. After each irradiation step, these properties were fitted to the data on the electric field from the TCT signals and CCE. Two effective acceptor and donor levels were needed to fit the data after each step. It turned out that the energy levels and cross sections could be kept constant and the trap density was proportional to the cumulative fluence of the irradiation steps. The highly non-linear rate dependent diamond polarization and the resulting signal loss can be simulated using this effective defect model and is in agreement with the measurement results

  2. Description of radiation damage in diamond sensors using an effective defect model

    Energy Technology Data Exchange (ETDEWEB)

    Kassel, Florian [Institute for Experimental Nuclear Physics (IEKP), KIT, Karlsruhe (Germany); CERN, Meyrin (Switzerland); Guthoff, Moritz; Dabrowski, Anne [CERN, Meyrin (Switzerland); Boer, Wim de [Institute for Experimental Nuclear Physics (IEKP), KIT, Karlsruhe (Germany)

    2017-11-15

    The Beam Condition Monitoring Leakage (BCML) system is a beam monitoring device in the CMS experiment at the LHC consisting of 32 poly-crystalline (pCVD) diamond sensors. The BCML sensors, located in rings around the beam, are exposed to high particle rates originating from the colliding beams. These particles cause lattice defects, which act as traps for the ionized charge carrier leading to a reduced charge collection efficiency (CCE). The radiation induced CCE degradation was, however, much more severe than expected from low rate laboratory measurements. Measurement and simulations presented in this paper show that this discrepancy is related to the rate of incident particles. At high particle rates, the trapping rate of the ionization is strongly increased compared to the detrapping rate leading to an increased build-up of space charge. This space charge locally reduces the internal electric field increasing the trapping rate and hence reducing the CCE even further. In order to connect these macroscopic measurements with the microscopic defects acting as traps for the ionization charge, the TCAD simulation program SILVACO was used. It allows to introduce the defects as effective donor and acceptor levels, and can calculate the electric field from Transient Current Technique (TCT) signals and CCE as a function of the effective trap properties, like density, energy level, and trapping cross section. After each irradiation step, these properties were fitted to the data on the electric field from the TCT signals and CCE. Two effective acceptor and donor levels were needed to fit the data after each step. It turned out that the energy levels and cross sections could be kept constant and the trap density was proportional to the cumulative fluence of the irradiation steps. The highly non-linear rate dependent diamond polarization and the resulting signal loss can be simulated using this effective defect model and is in agreement with the measurement results

  3. A field study on root cause analysis of defects in space software

    International Nuclear Information System (INIS)

    Silva, Nuno; Cunha, João Carlos; Vieira, Marco

    2017-01-01

    Critical systems, such as space systems, are developed under strict requirements envisaging high integrity in accordance to specific standards. For such software systems, an independent assessment is put into effect (Independent Software Verification and Validation – ISVV) after the regular development lifecycle and V&V activities, aiming at finding residual faults and raising confidence in the software. However, it has been observed that there is still a significant number of defects remaining at this stage, questioning the effectiveness of the previous engineering processes. This paper presents a root cause analysis of 1070 defects found in four space software projects during ISVV, by applying an improved Orthogonal Defect Classification (ODC) taxonomy and examining the defect types, triggers and impacts, in order to identify why they reached such a later stage in the development. The paper also puts forward proposals for modifications to both the software development (to prevent defects) and the V&V activities (to better detect defects) and an assessment methodology for future works on root cause analysis. - Highlights: • Root cause analysis of space software defects by using an enhanced ODC taxonomy. • Prioritization of the root causes according to the more important defect impacts. • Identification of improvements to systems engineering and development processes. • Improvements to V&V activities as means to reduce the occurrence of defects. • Generic process to achieve the defects root causes and the corrections suggestions.

  4. Local defect correction for boundary integral equation methods

    NARCIS (Netherlands)

    Kakuba, G.; Anthonissen, M.J.H.

    2014-01-01

    The aim in this paper is to develop a new local defect correction approach to gridding for problems with localised regions of high activity in the boundary element method. The technique of local defect correction has been studied for other methods as finite difference methods and finite volume

  5. Shp2 knockdown and Noonan/LEOPARD mutant Shp2-induced gastrulation defects.

    Directory of Open Access Journals (Sweden)

    Chris Jopling

    2007-12-01

    Full Text Available Shp2 is a cytoplasmic protein-tyrosine phosphatase that is essential for normal development. Activating and inactivating mutations have been identified in humans to cause the related Noonan and LEOPARD syndromes, respectively. The cell biological cause of these syndromes remains to be determined. We have used the zebrafish to assess the role of Shp2 in early development. Here, we report that morpholino-mediated knockdown of Shp2 in zebrafish resulted in defects during gastrulation. Cell tracing experiments demonstrated that Shp2 knockdown induced defects in convergence and extension cell movements. In situ hybridization using a panel of markers indicated that cell fate was not affected by Shp2 knock down. The Shp2 knockdown-induced defects were rescued by active Fyn and Yes and by active RhoA. We generated mutants of Shp2 with mutations that were identified in human patients with Noonan or LEOPARD Syndrome and established that Noonan Shp2 was activated and LEOPARD Shp2 lacked catalytic protein-tyrosine phosphatase activity. Expression of Noonan or LEOPARD mutant Shp2 in zebrafish embryos induced convergence and extension cell movement defects without affecting cell fate. Moreover, these embryos displayed craniofacial and cardiac defects, reminiscent of human symptoms. Noonan and LEOPARD mutant Shp2s were not additive nor synergistic, consistent with the mutant Shp2s having activating and inactivating roles in the same signaling pathway. Our results demonstrate that Shp2 is required for normal convergence and extension cell movements during gastrulation and that Src family kinases and RhoA were downstream of Shp2. Expression of Noonan or LEOPARD Shp2 phenocopied the craniofacial and cardiac defects of human patients. The finding that defective Shp2 signaling induced cell movement defects as early as gastrulation may have implications for the monitoring and diagnosis of Noonan and LEOPARD syndrome.

  6. Cariogenic properties of Streptococcus mutans clinical isolates with sortase defects.

    Science.gov (United States)

    Lapirattanakul, Jinthana; Takashima, Yukiko; Tantivitayakul, Pornpen; Maudcheingka, Thaniya; Leelataweewud, Pattarawadee; Nakano, Kazuhiko; Matsumoto-Nakano, Michiyo

    2017-09-01

    In Streptococcus mutans, a Gram-positive pathogen of dental caries, several surface proteins are anchored by the activity of sortase enzyme. Although various reports have shown that constructed S. mutans mutants deficient of sortase as well as laboratory reference strains with a sortase gene mutation have low cariogenic potential, no known studies have investigated clinical isolates with sortase defects. Here, we examined the cariogenic properties of S. mutans clinical isolates with sortase defects as well as caries status in humans harboring such defective isolates. Sortase-defective clinical isolates were evaluated for biofilm formation, sucrose-dependent adhesion, stress-induced dextran-dependent aggregation, acid production, and acid tolerance. Additionally, caries indices of subjects possessing such defective isolates were determined. Our in vitro results indicated that biofilm with a lower quantity was formed by sortase-defective as compared to non-defective isolates. Moreover, impairments of sucrose-dependent adhesion and stress-induced dextran-dependent aggregation were found among the isolates with defects, whereas no alterations were seen in regard to acid production or tolerance. Furthermore, glucan-binding protein C, a surface protein anchored by sortase activity, was predominantly detected in culture supernatants of all sortase-defective S. mutans isolates. Although the sortase-defective isolates showed lower cariogenic potential because of a reduction in some cariogenic properties, deft/DMFT indices revealed that all subjects harboring those isolates had caries experience. Our findings suggest the impairment of cariogenic properties in S. mutans clinical isolates with sortase defects, though the detection of these defective isolates seemed not to imply low caries risk in the subjects harboring them. Copyright © 2017 Elsevier Ltd. All rights reserved.

  7. High temperature defect equilibrium in ZnS:Cu single crystals

    Energy Technology Data Exchange (ETDEWEB)

    Lott, K.; Shinkarenko, S.; Tuern, L.; Nirk, T.; Oepik, A. [Department of Materials Science, Tallinn University of Technology, Tallinn (Estonia); Kallavus, U. [Centre for Materials Research, Tallinn University of Technology, Tallinn (Estonia); Gorokhova, E. [Scientific Research and Technological Institute of Optical Material Science, S. I. Vavilov State Optical Institute, All-Russia Science Center, St. Petersburg (Russian Federation); Grebennik, A.; Vishnjakov, A. [Department of Physical Chemistry, D. Mendelejev University of Chemical Technology of Russia, Moscow (Russian Federation)

    2010-07-15

    High temperature investigations in ZnS:Cu crystals were performed under defined conditions. High temperature electrical conductivity and copper solubility data were obtained under different component vapour pressures and under different sample temperatures. The experimental data at sulphur vapour pressure can be explained by the inclusion of abnormal site occupation i.e. by antistructural disorder. Compensating association of copper with this antistructure defect may occur. Antistructure disorder disappears with increasing of zinc vapour pressure and with increasing role of holes in bipolar conductivity. The method for solving the system of quasichemical reactions without approximation was used to model high temperature defect equilibrium. This model contains antistructure disorder and copper solubility limitation. (Abstract Copyright [2010], Wiley Periodicals, Inc.)

  8. Fibrinogen Vicenza and Genova II: two new cases of congenital dysfibrinogenemia with isolated defect of fibrin monomer polymerization and inhibitory activity on normal coagulation.

    Science.gov (United States)

    Rodeghiero, F; Castaman, G C; Dal Belin Peruffo, A; Dini, E; Galletti, A; Barone, E; Gastaldi, G

    1987-06-03

    Two new cases of congenital dysfibrinogenemia are presented in which defective fibrin monomer polymerization and inhibitory activity on normal coagulation were observed. They have been tentatively called fibrinogen Vicenza and Genova II. The first was discovered in a family with mild bleeding diathesis, the second in an asymptomatic family. In almost all reported cases of fibrinogens with defective fibrin monomer polymerization, additional functional or structural defects have been detected. In our cases, on the contrary, detailed investigations failed to show any other abnormality. Fibrinogen Genova II is apparently identical to fibrinogen Baltimore IV, whereas fibrinogen Vicenza is similar to fibrinogen Troyes and Genova I, but also exerts an evident inhibitory activity on normal coagulation and differs from fibrinogen Genova II and Baltimore IV showing a different kinetic pattern of fibrin monomer polymerization.

  9. Study of impurity-defect interaction by perturbed angular correlations: 111Cd in silver

    International Nuclear Information System (INIS)

    Sage, Francoise.

    1975-01-01

    The quadrupole interaction of 111 Cd nuclei following the decay of 111 In implanted by the 109 Ag(α,2n) 111 In reaction into a cubic Ag lattice was measured using the time-differential perturbed-angular correlation technique. A non vanishing quadrupole interaction corresponding to a distribution of electric field gradients was observed, due to the interaction between the 111 Cd impurity and the defects created during the recoil of 111 In nuclei. For low temperature (77 K) irradiations, it has been shown that i) the angular correlation pattern depends on the intensity of α beam current, due to the interaction between defect cascades at high α beam intensity; and ii) it also depends on the annealing of the irradiated sample at different temperatures; the change in the defect configuration around the impurities is then due to the mobility of the various defects [fr

  10. Di-interstitial defect in silicon revisited

    International Nuclear Information System (INIS)

    Londos, C. A.; Antonaras, G.; Chroneos, A.

    2013-01-01

    Infrared spectroscopy was used to study the defect spectrum of Cz-Si samples following fast neutron irradiation. We mainly focus on the band at 533 cm −1 , which disappears from the spectra at ∼170 °C, exhibiting similar thermal stability with the Si-P6 electron paramagnetic resonance (EPR) spectrum previously correlated with the di-interstitial defect. The suggested structural model of this defect comprises of two self-interstitial atoms located symmetrically around a lattice site Si atom. The band anneals out following a first-order kinetics with an activation energy of 0.88 ± 0.3 eV. This value does not deviate considerably from previously quoted experimental and theoretical values for the di-interstitial defect. The present results indicate that the 533 cm −1 IR band originates from the same structure as that of the Si-P6 EPR spectrum

  11. AC Electric Field Activated Shape Memory Polymer Composite

    Science.gov (United States)

    Kang, Jin Ho; Siochi, Emilie J.; Penner, Ronald K.; Turner, Travis L.

    2011-01-01

    Shape memory materials have drawn interest for applications like intelligent medical devices, deployable space structures and morphing structures. Compared to other shape memory materials like shape memory alloys (SMAs) or shape memory ceramics (SMCs), shape memory polymers (SMPs) have high elastic deformation that is amenable to tailored of mechanical properties, have lower density, and are easily processed. However, SMPs have low recovery stress and long response times. A new shape memory thermosetting polymer nanocomposite (LaRC-SMPC) was synthesized with conductive fillers to enhance its thermo-mechanical characteristics. A new composition of shape memory thermosetting polymer nanocomposite (LaRC-SMPC) was synthesized with conductive functionalized graphene sheets (FGS) to enhance its thermo-mechanical characteristics. The elastic modulus of LaRC-SMPC is approximately 2.7 GPa at room temperature and 4.3 MPa above its glass transition temperature. Conductive FGSs-doped LaRC-SMPC exhibited higher conductivity compared to pristine LaRC SMP. Applying an electric field at between 0.1 Hz and 1 kHz induced faster heating to activate the LaRC-SMPC s shape memory effect relative to applying DC electric field or AC electric field at frequencies exceeding1 kHz.

  12. High defect stage, contralateral defects, and poor flexibility are negative predictive factors of bone union in pediatric and adolescent athletes with spondylolysis.

    Science.gov (United States)

    Yamazaki, Kazufumi; Kota, Shintaro; Oikawa, Daisuke; Suzuki, Yoshiji

    2018-01-01

    To identify predisposition to spondylolysis and physical characteristics associated with "bone union" following conservative spondylolysis treatment among pediatric and adolescent athletes. We retrospectively analyzed pediatric and adolescent athletes with spondylolysis who underwent conservative treatment and rehabilitation for three or more consecutive months following sports activity cessation. Patients with terminal spondylolysis or who did not discontinue sports activities were excluded. We compared physical fitness factors in the union and nonunion groups and examined the association between bone union and spondylolysis severity by logistic regression analysis. Of 183 patients with spondylolysis who underwent rehabilitation over a four-year period, 127 patients with 227 defects were included in the final analysis. Bone union was achieved in 66.5% (151/227) of the pars interarticularis defects and 70.1% (89/127) of the patients. On multivariate analysis, stage of pars interarticularis defect (odds ratio [OR], 0.26;p = 0.0027), stage of contralateral pars interarticularis defect (OR, 0.51;p = 0.00026), and straight leg-raising test (OR, 1.06;p = 0.028) were significantly associated with bone union. High defect stage, stage of the contralateral pars interarticularis defect, and poor flexibility were negative prognostic factors of bone healing in athletes with spondylolysis. J. Med. Invest. 65:126-130, February, 2018.

  13. Electrical Activity in a Time-Delay Four-Variable Neuron Model under Electromagnetic Induction

    Directory of Open Access Journals (Sweden)

    Keming Tang

    2017-11-01

    Full Text Available To investigate the effect of electromagnetic induction on the electrical activity of neuron, the variable for magnetic flow is used to improve Hindmarsh–Rose neuron model. Simultaneously, due to the existence of time-delay when signals are propagated between neurons or even in one neuron, it is important to study the role of time-delay in regulating the electrical activity of the neuron. For this end, a four-variable neuron model is proposed to investigate the effects of electromagnetic induction and time-delay. Simulation results suggest that the proposed neuron model can show multiple modes of electrical activity, which is dependent on the time-delay and external forcing current. It means that suitable discharge mode can be obtained by selecting the time-delay or external forcing current, which could be helpful for further investigation of electromagnetic radiation on biological neuronal system.

  14. The active electric sense of weakly electric fish: from electric organ discharge to sensory processing and behaviour

    Directory of Open Access Journals (Sweden)

    Krahe Rüdiger

    2016-01-01

    Full Text Available Sensory systems have been shaped by evolution to extract information that is relevant for decision making. In order to understand the mechanisms used by sensory systems for filtering the incoming stream of sensory input, it is important to have a quantitative understanding of the natural sensory scenes that are to be processed. Weakly electric fish lead a rather cryptic nocturnal life in often turbid tropical rainforest streams. They produce electric discharges and sense perturbations of their selfgenerated electric field for prey detection and navigation, and also use their active sense for communication in the context of courtship and aggression. The fact that they produce their electric signals throughout day and night permits the use of electrode arrays to track the movements of multiple individual fish and monitor their communication interactions, thus offering a window into their electrosensory world. This approach yields unprecedented access to information on the biology of these fishes and also on the statistical properties of the sensory scenes that are to be processed by their electrosensory system. The electrosensory system shares many organizational features with other sensory systems, in particular, the use of multiple topographic maps. In fact, the sensory surface (the skin is represented in three parallel maps in the hindbrain, with each map covering the receptor organ array with six different cell types that project to the next higher level of processing. Thus, the electroreceptive body surface is represented a total of 18 times in the hindbrain, with each representation having its specific filter properties and degree of response plasticity. Thus, the access to the sensory world of these fish as well as the manifold filtering of the sensory input makes these fish an excellent model system for exploring the cell-intrinsic and network characteristics underlying the extraction of behaviourally relevant sensory information.

  15. Use of the virtual instrument technology in complex diagnostics of marine electrical equipment

    Directory of Open Access Journals (Sweden)

    Ivlev M. L.

    2017-12-01

    Full Text Available The assessment of the most informative methods of diagnostics of mechanisms with electric drive has been given; their realization in a measuring complex on the basis of the virtual device has been considered. The comparative analysis of vibration methods for the analysis of current spectra and the thermal method of nondestructive testing has been carried out. It has been stated that methods of vibration diagnostics are more sensitive to defects in the mechanical part of the electric drive (determination of defects in bearing assemblies, misalignment of shafts, imbalance of rotating parts. Analysis of the current spectrum at the early stage has shown the defects of rotor windings, static and dynamic rotor eccentricity. The temperature of the bearing assemblies and the stator (the thermal control method indicates the defects in lubrication and cooling systems. The set of methods of nondestructive control allows increase the completeness and reliability of diagnosis of the mechanism with electric drive. The optimal solution to realize into one measuring instrument all methods of diagnostics is to use the technology of virtual instruments. The list of components for the measuring part of the complex and the functional scheme of the program for processing the results have been given. Spectra of vibration of defective mechanisms have been obtained with the help of the measuring complex based on the virtual instrument. Some recommendations have been given on the introduction of the virtual appliance in the State register of measuring instruments.

  16. Neuron matters: electric activation of neuronal tissue is dependent on the interaction between the neuron and the electric field.

    Science.gov (United States)

    Ye, Hui; Steiger, Amanda

    2015-08-12

    In laboratory research and clinical practice, externally-applied electric fields have been widely used to control neuronal activity. It is generally accepted that neuronal excitability is controlled by electric current that depolarizes or hyperpolarizes the excitable cell membrane. What determines the amount of polarization? Research on the mechanisms of electric stimulation focus on the optimal control of the field properties (frequency, amplitude, and direction of the electric currents) to improve stimulation outcomes. Emerging evidence from modeling and experimental studies support the existence of interactions between the targeted neurons and the externally-applied electric fields. With cell-field interaction, we suggest a two-way process. When a neuron is positioned inside an electric field, the electric field will induce a change in the resting membrane potential by superimposing an electrically-induced transmembrane potential (ITP). At the same time, the electric field can be perturbed and re-distributed by the cell. This cell-field interaction may play a significant role in the overall effects of stimulation. The redistributed field can cause secondary effects to neighboring cells by altering their geometrical pattern and amount of membrane polarization. Neurons excited by the externally-applied electric field can also affect neighboring cells by ephaptic interaction. Both aspects of the cell-field interaction depend on the biophysical properties of the neuronal tissue, including geometric (i.e., size, shape, orientation to the field) and electric (i.e., conductivity and dielectricity) attributes of the cells. The biophysical basis of the cell-field interaction can be explained by the electromagnetism theory. Further experimental and simulation studies on electric stimulation of neuronal tissue should consider the prospect of a cell-field interaction, and a better understanding of tissue inhomogeneity and anisotropy is needed to fully appreciate the neural

  17. α-emission channeling studies of the interaction of Li with defects in Si and diamond

    CERN Multimedia

    2002-01-01

    In most semiconductors Li is a fast diffusing impurity and acts as a shallow interstitial donor, i.e. Li atoms normally appear as positively charged ions located on non-substitutional lattice sites. However, due to the positive charge Li may interact with other, preferentially negatively charged, defects present in the material. The major three groups of defects where interaction with Li was observed are p-type dopants, vacancy defects and defects containing trace impurities like oxygen. Although the influence of Li on electrical or optical properties of Si was investigated extensively in the past, the microscopical structure of Li-defect complexes and the relation between structure and electronic properties is still unresolved in many cases. In diamond, Li is the only impurity to date which was found to be an interstitial donor after ion implantation. Up to now there are no systematic investigations of the behavior of Li in diamond.\\\\ ...

  18. Electric field cycling behavior of ferroelectric hafnium oxide.

    Science.gov (United States)

    Schenk, Tony; Schroeder, Uwe; Pešić, Milan; Popovici, Mihaela; Pershin, Yuriy V; Mikolajick, Thomas

    2014-11-26

    HfO2 based ferroelectrics are lead-free, simple binary oxides with nonperovskite structure and low permittivity. They just recently started attracting attention of theoretical groups in the fields of ferroelectric memories and electrostatic supercapacitors. A modified approach of harmonic analysis is introduced for temperature-dependent studies of the field cycling behavior and the underlying defect mechanisms. Activation energies for wake-up and fatigue are extracted. Notably, all values are about 100 meV, which is 1 order of magnitude lower than for conventional ferroelectrics like lead zirconate titanate (PZT). This difference is mainly atttributed to the one to two orders of magnitude higher electric fields used for cycling and to the different surface to volume ratios between the 10 nm thin films in this study and the bulk samples of former measurements or simulations. Moreover, a new, analog-like split-up effect of switching peaks by field cycling is discovered and is explained by a network model based on memcapacitive behavior as a result of defect redistribution.

  19. Electrical and magneto transport properties of

    Indian Academy of Sciences (India)

    samples. The morphology of crystal grains shows that the grains are nearly uniform in size and spherical. Electrical .... 1.5406 Å) in angular steps of 0.02 .... table to scattering by impurities, defects, grain boundaries .... because of different orientations of opposite spins, an energy ... 2000 Colossal magneto resistance oxides.

  20. Electrical and mechanical characterization of nanoscale-layered cellulose-based electro-active paper.

    Science.gov (United States)

    Yun, Gyu-Young; Yun, Ki-Ju; Kim, Joo-Hyung; Kim, Jaehwan

    2011-01-01

    In order to understand the electro-mechanical behavior of piezoelectric electro active paper (EAPap), the converse and direct piezoelectric characterization of cellulose EAPap was studied and compared. A delay between the electrical field and the induced strain of EAPap was observed due to the inner nano-voids or the localized amorphous regions in layer-by-layered structure to capture or hold the electrical charges and remnant ions. The linear relation between electric field and induced strain is also observed. The electro-mechanical performance of EAPap is discussed in detail in this paper.

  1. Effect of irradiation temperature and initial crystal doping level on defect creation efficiency in silicon

    International Nuclear Information System (INIS)

    Korshunov, F.P.; Markevich, V.P.; Medvedeva, I.F.; Murin, L.I.

    1990-01-01

    The defect creation processes in n-type silicon irradiated by 60 Co gamma-rays or fast electrons (E = 4 MeV) have been investigated. Using electrical measurements the dependences of introduction efficiencies of the main radiation defects (A-, E-centres, carbon-related complexes) on the irradiation temperature (T irr = 77-470 K) and material doping level (N h = 2 x 10 12 - 2 x 10 15 cm -3 ) are obtained. It is shown that the efficiency of these defects formation is conditioned by the probability of the Frenkel pairs separation and depends strongly on the Fermi level position in crystals being irradiated. 9 refs.; 3 figs.; 1 tab

  2. Distributions of electric and elastic fields at domain boundaries

    International Nuclear Information System (INIS)

    Novak, Josef; Fousek, Jan; Maryska, Jiri; Marvan, Milan

    2005-01-01

    In this paper we describe the application of the finite element method (FEM) in modelling spatial distributions of electric and elastic fields in a ferroelectric crystals with two domains separated by a 90 deg. domain wall. The domain boundary is idealized as a two-dimensional defect in an electro-elastic continuum. It represents the source of inhomogenity and internal distortion in both elastic and electric fields. The main results are distributions of electric field, strain and mechanical force along the domain boundary

  3. A new approach to reticle haze defect management in the fab

    Science.gov (United States)

    Gau, Yeu-Dong; Hsiao, Kevin; Hsu, Wen-Hao; Lu, Yu-Min; Chen, Chun-Chieh; Liu, Chen Min; Van Riet, Mike; Gaspar, Noah; Yu, Chien-Chun; Chan, Phillip

    2009-04-01

    The present practice of managing reticle haze defectivity involves reticle inspection at regular intervals, coupled with inspection of print-down wafers in between reticle inspections. The sensitivity of the reticle inspection tool allows it to detect haze defects before they are large enough to print on the wafer. Cleaning the reticle as soon as the reticle inspector detects haze defects could result in a shorter reticle lifetime. Thus there is strong motivation to develop a methodology to determine what size defect on the reticle results in a printable defect on the wafer. Printability depends upon several variables in the litho process as well as whether the defect resides in a high-MEEF (Mask Error Enhancement Factor) or low-MEEF area of the die.1 Trying to use wafer inspection to identify the first appearance of haze defects may require inspector recipe settings that are not suited to a practical wafer scan. A novel method of managing such defects is to map the coordinates of the defects from the reticle onto the wafer, and apply a separate, hyper-sensitive threshold to a small area surrounding the given coordinates. With this method, one can start to correlate the size of the defects printed on the wafer to the light transmission rate from the corresponding site on the reticle scan, and thus can predict the starting point at which the haze defects on the reticle are likely to print on the wafer. The experiment described in this paper is a first step in exploring the feasibility of this method to help track the growth of nascent haze defects and optimize the timing to rework the reticles. The methodology may have extendibility to other applications in which hyper-sensitive wafer inspection at localized areas within the die would be beneficial, such as monitoring weak spots found by Optical Rule Check, Process Window Qualification, electrical test or failure analysis.

  4. Biomaterials with antibacterial and osteoinductive properties to repair infected bone defects

    NARCIS (Netherlands)

    Lu, H.; Liu, Y.; Guo, J.; Wu, H.; Wang, J.; Wu, G.

    2016-01-01

    The repair of infected bone defects is still challenging in the fields of orthopedics, oral implantology and maxillofacial surgery. In these cases, the self-healing capacity of bone tissue can be significantly compromised by the large size of bone defects and the potential/active bacterial activity.

  5. Risk assessment for pipelines with active defects based on artificial intelligence methods

    Energy Technology Data Exchange (ETDEWEB)

    Anghel, Calin I. [Department of Chemical Engineering, Faculty of Chemistry and Chemical Engineering, University ' Babes-Bolyai' , Cluj-Napoca (Romania)], E-mail: canghel@chem.ubbcluj.ro

    2009-07-15

    The paper provides another insight into the pipeline risk assessment for in-service pressure piping containing defects. Beside of the traditional analytical approximation methods or sampling-based methods safety index and failure probability of pressure piping containing defects will be obtained based on a novel type of support vector machine developed in a minimax manner. The safety index or failure probability is carried out based on a binary classification approach. The procedure named classification reliability procedure, involving a link between artificial intelligence and reliability methods was developed as a user-friendly computer program in MATLAB language. To reveal the capacity of the proposed procedure two comparative numerical examples replicating a previous related work and predicting the failure probabilities of pressured pipeline with defects were presented.

  6. Risk assessment for pipelines with active defects based on artificial intelligence methods

    International Nuclear Information System (INIS)

    Anghel, Calin I.

    2009-01-01

    The paper provides another insight into the pipeline risk assessment for in-service pressure piping containing defects. Beside of the traditional analytical approximation methods or sampling-based methods safety index and failure probability of pressure piping containing defects will be obtained based on a novel type of support vector machine developed in a minimax manner. The safety index or failure probability is carried out based on a binary classification approach. The procedure named classification reliability procedure, involving a link between artificial intelligence and reliability methods was developed as a user-friendly computer program in MATLAB language. To reveal the capacity of the proposed procedure two comparative numerical examples replicating a previous related work and predicting the failure probabilities of pressured pipeline with defects were presented.

  7. The impact of liberalisation on every day's activity of the electricity market participants

    International Nuclear Information System (INIS)

    Beran, H.

    2004-01-01

    This contribution is dedicated to the consequences of the liberalisation of the electricity market. Special attention is paid to activities of electricity suppliers and eligible customers connected with work with load profiles. The first part is dedicated to electricity suppliers and traders. It identifies the main changes brought by the liberalisation process and the activities of the suppliers connected with work with load profiles. Special software tools are mentioned, such as tools for balancing, prediction, optimisation of costs, pricing, and communication tools. The second part of this contribution is dedicated to eligible customers. It describes the main changes for eligible customers and the challenges of the open market. Special software tools for eligible customers are introduced, such as tools for balancing, load profile creation, price calculation and communication. At the end of this contribution, selected consequences of inadequate preparation for the electricity market are mentioned as well as the ways to minimize the negative effects. (author)

  8. Theoretical insights on the electro-thermal transport properties of monolayer MoS{sub 2} with line defects

    Energy Technology Data Exchange (ETDEWEB)

    Saha, Dipankar, E-mail: dipsah-etc@yahoo.co.in; Mahapatra, Santanu, E-mail: santanu@dese.iisc.ernet.in [Nano-Scale Device Research Laboratory, Department of Electronic Systems Engineering, Indian Institute of Science, Bangalore 560012 (India)

    2016-04-07

    Two dimensional (2D) materials demonstrate several novel electrical, mechanical, and thermal properties which are quite distinctive to those of their bulk form. Among many others, one important potential application of the 2D material is its use in the field of energy harvesting. Owing to that, here we present a detailed study on electrical as well as thermal transport of monolayer MoS{sub 2}, in quasi ballistic regime. Besides the perfect monolayer in its pristine form, we also consider various line defects which have been experimentally observed in mechanically exfoliated MoS{sub 2} samples. For calculating various parameters related to the electrical transmission, we employ the non-equilibrium Green's function-density functional theory combination. However, to obtain the phonon transmission, we take help of the parametrized Stillinger-Weber potential which can accurately delineate the inter-atomic interactions for the monolayer MoS{sub 2}. Due to the presence of line defects, we observed significant reductions in both the charge carrier and the phonon transmissions through a monolayer MoS{sub 2} flake. Moreover, we also report a comparative analysis showing the temperature dependency of the thermoelectric figure of merit values, as obtained for the perfect as well as the other defective 2D samples.

  9. Unloaded shortening velocity of voluntarily and electrically activated human dorsiflexor muscles in vivo.

    Directory of Open Access Journals (Sweden)

    Kazushige Sasaki

    Full Text Available We have previously shown that unloaded shortening velocity (V(0 of human plantar flexors can be determined in vivo, by applying the "slack test" to submaximal voluntary contractions (J Physiol 567:1047-1056, 2005. In the present study, to investigate the effect of motor unit recruitment pattern on V(0 of human muscle, we modified the slack test and applied this method to both voluntary and electrically elicited contractions of dorsiflexors. A series of quick releases (i.e., rapid ankle joint rotation driven by an electrical dynamometer was applied to voluntarily activated dorsiflexor muscles at three different contraction intensities (15, 50, and 85% of maximal voluntary contraction; MVC. The quick-release trials were also performed on electrically activated dorsiflexor muscles, in which three stimulus conditions were used: submaximal (equal to 15%MVC 50-Hz stimulation, supramaximal 50-Hz stimulation, and supramaximal 20-Hz stimulation. Modification of the slack test in vivo resulted in good reproducibility of V(0, with an intraclass correlation coefficient of 0.87 (95% confidence interval: 0.68-0.95. Regression analysis showed that V(0 of voluntarily activated dorsiflexor muscles significantly increased with increasing contraction intensity (R(2 = 0.52, P<0.001. By contrast, V(0 of electrically activated dorsiflexor muscles remained unchanged (R(2<0.001, P = 0.98 among three different stimulus conditions showing a large variation of tetanic torque. These results suggest that the recruitment pattern of motor units, which is quite different between voluntary and electrically elicited contractions, plays an important role in determining shortening velocity of human skeletal muscle in vivo.

  10. Defect Chemistry of Oxides for Energy Applications.

    Science.gov (United States)

    Schweke, Danielle; Mordehovitz, Yuval; Halabi, Mahdi; Shelly, Lee; Hayun, Shmuel

    2018-05-31

    Oxides are widely used for energy applications, as solid electrolytes in various solid oxide fuel cell devices or as catalysts (often associated with noble metal particles) for numerous reactions involving oxidation or reduction. Defects are the major factors governing the efficiency of a given oxide for the above applications. In this paper, the common defects in oxide systems and external factors influencing the defect concentration and distribution are presented, with special emphasis on ceria (CeO 2 ) based materials. It is shown that the behavior of a variety of oxide systems with respect to properties relevant for energy applications (conductivity and catalytic activity) can be rationalized by general considerations about the type and concentration of defects in the specific system. A new method based on transmission electron microscopy (TEM), recently reported by the authors for mapping space charge defects and measuring space charge potentials, is shown to be of potential importance for understanding conductivity mechanisms in oxides. The influence of defects on gas-surface reactions is exemplified on the interaction of CO 2 and H 2 O with ceria, by correlating between the defect distribution in the material and its adsorption capacity or splitting efficiency. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  11. Tailored lithium storage performance of graphene aerogel anodes with controlled surface defects for lithium-ion batteries

    International Nuclear Information System (INIS)

    Shan, Hui; Xiong, Dongbin; Li, Xifei; Sun, Yipeng; Yan, Bo; Li, Dejun; Lawes, Stephen; Cui, Yanhua; Sun, Xueliang

    2016-01-01

    Graphical abstract: - Highlights: • The graphene aerogel (GA) with controllable surface defects was synthesized. • The graphene aerogel anodes showed high specific capacity and excellent cyclability. • Surface defects on the GA significantly function for lithium storage. • This study can extend the application of the graphene anodes for LIBs. - Abstract: Three dimensional self-assembled graphene aerogel (GA) anode materials with some surface defects have been successfully generated through a facile hydrothermal procedure using graphene oxide as precursor. The morphologies and textural properties of as-obtained GA were investigated by scanning electron microscopy, transmission electron microscopy, X-ray photoelectron spectroscopy, Raman and other spectroscopy techniques. The surface defects and electrical conductivities of GA can be controlled by adjusting the hydrothermal reaction time. The results indicate that GA with a reaction time of 6 h exhibits extremely high reversible capacity (1430 mAh g"−"1 at the current density of 100 mA g"−"1) and superior rate capability (587 mAh g"−"1 at 800 mA g"−"1) with excellent cycling stability (maintaining a reversible capacity of 960 mAh g"−"1 at 100 mA g"−"1 after 100 cycles). It is demonstrated that the 3D porous network with increased defect density, as well as the considerable electrical conductivity, results in the excellent electrochemical performance of the as-made GA anodes in lithium-ion batteries.

  12. D.C. electrical conductivity measurements on ADP single crystals ...

    Indian Academy of Sciences (India)

    Unknown

    Impurity added ADP crystals; density; electrical conductivity measurements. 1. Introduction ... determined by the intrinsic defects caused by thermal fluctuations in the ... beaker (corning glass vessel) and allowed to equilibrate at the desired ...

  13. Phosphorus doped and defects engineered graphene for improved electrochemical sensing: synergistic effect of dopants and defects

    International Nuclear Information System (INIS)

    Chu, Ke; Wang, Fan; Tian, Ye; Wei, Zhen

    2017-01-01

    Heteroatom-doped graphene materials emerged as promising metal-free catalysts have recently attracted a growing interest in electrochemical sensing applications. However, their catalytic activity and sensing performances still need to be further improved. Herein, we reported the development of unique phosphorus (P)-doped and plasma-etched graphene (denoted as PG-E) as an efficient metal-free electrocatalyst for dopamine (DA) sensing. It was demonstrated that introducing both P-dopants and plasma-engineered defects in graphene could synergistically improve the activity toward electrocatalytic oxidation of DA by increasing the accessible active sites and promoting the electron transport capability. The resulting PG-E modified electrode showed exceptional DA sensing performances with low detection limit, high selectivity and good stability. These results suggested that the synergistic effect of dopants and defects might be an important factor for developing the advanced graphene-based metal-free catalysts for electrochemical sensing.

  14. Consolidation of Partially Stabilized ZrO2 in the Presence of a Noncontacting Electric Field

    Science.gov (United States)

    Majidi, Hasti; van Benthem, Klaus

    2015-05-01

    Electric field-assisted sintering techniques demonstrate accelerated densification at lower temperatures than the conventional sintering methods. However, it is still debated whether the applied field and/or resulting currents are responsible for the densification enhancement. To distinguish the effects of an applied field from current flow, in situ scanning transmission electron microscopy experiments with soft agglomerates of partially stabilized yttria-doped zirconia particles are carried out. A new microelectromechanical system-based sample support is used to heat particle agglomerates while simultaneously exposing them to an externally applied noncontacting electric field. Under isothermal condition at 900 °C , an electric field strength of 500 V /cm shows a sudden threefold enhancement in the shrinkage of the agglomerates. The applied electrostatic potential lowers the activation energy for point defect formation within the space charge zone and therefore promotes consolidation. Obtaining similar magnitudes of shrinkage in the absence of any electric field requires a higher temperature and longer time.

  15. Electrical resistance behavior with gamma radiation dose in bulk carbon nanostrutured samples

    International Nuclear Information System (INIS)

    Lage, J.; Leyva, A.; Pinnera, I.; Desdin, L. F.; Abreu, Y.; Cruz, C. M.; Leyva, D.; Toledo, C.

    2013-01-01

    The aim of this paper is to study the effects of 60 Co gamma radiation on the electrical resistance and V-I characteristic of bulk carbon nano structured samples obtained by electric arc discharge in water method. Images of pristine samples obtained with scanning electron, and the results in graphical form of the electrical characterization of irradiated samples are presented in the text. It was observed that the electrical resistance vs. dose behavior shows an initial increment reaching the maximum at approximately 135 kGy, followed by a drop of the resistance values. These behaviors are associated with the progressive generation of radiation induced defects in the sample, whose number increases to reach saturation at 135 kGy. From this dose, defects could lead to cross-links between different nano structures present in the sample conducting to a gradually drop in electrical resistance. The measured V-I curves show that, increasing exposure to the 60 Co gamma radiation, the electrical properties of the studied samples transit from a semiconductor towards a predominantly metallic behavior. These results were compared with those obtained for a sample of graphite powder irradiated under the same conditions. (Author)

  16. Fluctuation-driven directional flow of energy in biochemical cycle: Electric activation of Na,K ATPase

    Science.gov (United States)

    Yow Tsong, Tian

    1998-03-01

    Na,K ATPase is an ion pump which uses chemical bond energy of ATP to pump Na ion out of, and K ion into living cell thus maintaining ionic and osmotic balances of the cell. Both are uphill transport reactions. Surprisingly we have found that electric energy can also substitute chemical energy to fuel the pump activity. However, in this case only electric fields of certain waveforms, amplitudes, and frequencies are effective. Waveform, amplitude and frequency are three elements of signal. In other words, Na,K ATPase can recognize, process, and harvest energy from an oscillating or a fluctuating electric field to drive an endergonic reaction. The enzyme is a molecular transducer of electric signal. This report will describe electric activation experiment to define electric signal. Electric signal will then mixed with electric noise of broad power spectrum for experiment. Effect of white noise (WN) on the efficiency of Na,K ATPase will be investigated. It will be shown that WN of appropriate power level can improve the pump efficiency when a sub-optimal electric field is used. WN can also carry a sub-threshold signal to cross over the threshold. Stochastic resonance will be discussed in reference to these observations.

  17. Subthalamic nucleus electrical stimulation modulates calcium activity of nigral astrocytes.

    Directory of Open Access Journals (Sweden)

    Elodie Barat

    Full Text Available The substantia nigra pars reticulata (SNr is a major output nucleus of the basal ganglia, delivering inhibitory efferents to the relay nuclei of the thalamus. Pathological hyperactivity of SNr neurons is known to be responsible for some motor disorders e.g. in Parkinson's disease. One way to restore this pathological activity is to electrically stimulate one of the SNr input, the excitatory subthalamic nucleus (STN, which has emerged as an effective treatment for parkinsonian patients. The neuronal network and signal processing of the basal ganglia are well known but, paradoxically, the role of astrocytes in the regulation of SNr activity has never been studied.In this work, we developed a rat brain slice model to study the influence of spontaneous and induced excitability of afferent nuclei on SNr astrocytes calcium activity. Astrocytes represent the main cellular population in the SNr and display spontaneous calcium activities in basal conditions. Half of this activity is autonomous (i.e. independent of synaptic activity while the other half is dependent on spontaneous glutamate and GABA release, probably controlled by the pace-maker activity of the pallido-nigral and subthalamo-nigral loops. Modification of the activity of the loops by STN electrical stimulation disrupted this astrocytic calcium excitability through an increase of glutamate and GABA releases. Astrocytic AMPA, mGlu and GABA(A receptors were involved in this effect.Astrocytes are now viewed as active components of neural networks but their role depends on the brain structure concerned. In the SNr, evoked activity prevails and autonomous calcium activity is lower than in the cortex or hippocampus. Our data therefore reflect a specific role of SNr astrocytes in sensing the STN-GPe-SNr loops activity and suggest that SNr astrocytes could potentially feedback on SNr neuronal activity. These findings have major implications given the position of SNr in the basal ganglia network.

  18. Subthalamic nucleus electrical stimulation modulates calcium activity of nigral astrocytes.

    Science.gov (United States)

    Barat, Elodie; Boisseau, Sylvie; Bouyssières, Céline; Appaix, Florence; Savasta, Marc; Albrieux, Mireille

    2012-01-01

    The substantia nigra pars reticulata (SNr) is a major output nucleus of the basal ganglia, delivering inhibitory efferents to the relay nuclei of the thalamus. Pathological hyperactivity of SNr neurons is known to be responsible for some motor disorders e.g. in Parkinson's disease. One way to restore this pathological activity is to electrically stimulate one of the SNr input, the excitatory subthalamic nucleus (STN), which has emerged as an effective treatment for parkinsonian patients. The neuronal network and signal processing of the basal ganglia are well known but, paradoxically, the role of astrocytes in the regulation of SNr activity has never been studied. In this work, we developed a rat brain slice model to study the influence of spontaneous and induced excitability of afferent nuclei on SNr astrocytes calcium activity. Astrocytes represent the main cellular population in the SNr and display spontaneous calcium activities in basal conditions. Half of this activity is autonomous (i.e. independent of synaptic activity) while the other half is dependent on spontaneous glutamate and GABA release, probably controlled by the pace-maker activity of the pallido-nigral and subthalamo-nigral loops. Modification of the activity of the loops by STN electrical stimulation disrupted this astrocytic calcium excitability through an increase of glutamate and GABA releases. Astrocytic AMPA, mGlu and GABA(A) receptors were involved in this effect. Astrocytes are now viewed as active components of neural networks but their role depends on the brain structure concerned. In the SNr, evoked activity prevails and autonomous calcium activity is lower than in the cortex or hippocampus. Our data therefore reflect a specific role of SNr astrocytes in sensing the STN-GPe-SNr loops activity and suggest that SNr astrocytes could potentially feedback on SNr neuronal activity. These findings have major implications given the position of SNr in the basal ganglia network.

  19. Thermal evolution of defects in undoped zinc oxide grown by pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Zilan; Su, Shichen; Ling, Francis Chi-Chung, E-mail: ccling@hku.hk [Department of Physics, The University of Hong Kong, Pokfulam Road, Hong Kong (China); Anwand, W.; Wagner, A. [Institute of Radiation Physics, Helmholtz-Zentrum Dresden-Rossendorf, Bautzner Landstr. 400, 01328 Dresden (Germany)

    2014-07-21

    Undoped ZnO films are grown by pulsed laser deposition on c-plane sapphire with different oxygen pressures. Thermal evolutions of defects in the ZnO films are studied by secondary ion mass spectroscopy (SIMS), Raman spectroscopy, and positron annihilation spectroscopy (PAS), and with the electrical properties characterized by the room temperature Hall measurement. Oxygen deficient defect related Raman lines 560 cm{sup −1} and 584 cm{sup −1} are identified and their origins are discussed. Thermal annealing induces extensive Zn out-diffusion at the ZnO/sapphire interface and leaves out Zn-vacancy in the ZnO film. Two types of Zn-vacancy related defects with different microstructures are identified in the films. One of them dominates in the samples grown without oxygen. Annealing the sample grown without oxygen or growing the samples in oxygen would favor the Zn-vacancy with another microstructure, and this Zn-vacancy defect persists after 1100 °C annealing.

  20. Thermal evolution of defects in undoped zinc oxide grown by pulsed laser deposition

    Science.gov (United States)

    Wang, Zilan; Su, Shichen; Ling, Francis Chi-Chung; Anwand, W.; Wagner, A.

    2014-07-01

    Undoped ZnO films are grown by pulsed laser deposition on c-plane sapphire with different oxygen pressures. Thermal evolutions of defects in the ZnO films are studied by secondary ion mass spectroscopy (SIMS), Raman spectroscopy, and positron annihilation spectroscopy (PAS), and with the electrical properties characterized by the room temperature Hall measurement. Oxygen deficient defect related Raman lines 560 cm-1 and 584 cm-1 are identified and their origins are discussed. Thermal annealing induces extensive Zn out-diffusion at the ZnO/sapphire interface and leaves out Zn-vacancy in the ZnO film. Two types of Zn-vacancy related defects with different microstructures are identified in the films. One of them dominates in the samples grown without oxygen. Annealing the sample grown without oxygen or growing the samples in oxygen would favor the Zn-vacancy with another microstructure, and this Zn-vacancy defect persists after 1100 °C annealing.

  1. Thermal evolution of defects in undoped zinc oxide grown by pulsed laser deposition

    International Nuclear Information System (INIS)

    Wang, Zilan; Su, Shichen; Ling, Francis Chi-Chung; Anwand, W.; Wagner, A.

    2014-01-01

    Undoped ZnO films are grown by pulsed laser deposition on c-plane sapphire with different oxygen pressures. Thermal evolutions of defects in the ZnO films are studied by secondary ion mass spectroscopy (SIMS), Raman spectroscopy, and positron annihilation spectroscopy (PAS), and with the electrical properties characterized by the room temperature Hall measurement. Oxygen deficient defect related Raman lines 560 cm −1 and 584 cm −1 are identified and their origins are discussed. Thermal annealing induces extensive Zn out-diffusion at the ZnO/sapphire interface and leaves out Zn-vacancy in the ZnO film. Two types of Zn-vacancy related defects with different microstructures are identified in the films. One of them dominates in the samples grown without oxygen. Annealing the sample grown without oxygen or growing the samples in oxygen would favor the Zn-vacancy with another microstructure, and this Zn-vacancy defect persists after 1100 °C annealing.

  2. Immobile defects in ferroelastic walls: Wall nucleation at defect sites

    Science.gov (United States)

    He, X.; Salje, E. K. H.; Ding, X.; Sun, J.

    2018-02-01

    Randomly distributed, static defects are enriched in ferroelastic domain walls. The relative concentration of defects in walls, Nd, follows a power law distribution as a function of the total defect concentration C: N d ˜ C α with α = 0.4 . The enrichment Nd/C ranges from ˜50 times when C = 10 ppm to ˜3 times when C = 1000 ppm. The resulting enrichment is due to nucleation at defect sites as observed in large scale MD simulations. The dynamics of domain nucleation and switching is dependent on the defect concentration. Their energy distribution follows the power law with exponents during yield between ɛ ˜ 1.82 and 2.0 when the defect concentration increases. The power law exponent is ɛ ≈ 2.7 in the plastic regime, independent of the defect concentration.

  3. Measurement and simulation of the effects of ion-induced defects on ion beam-induced charge (IBIC) measurements in Si schottky diodes

    International Nuclear Information System (INIS)

    Hearne, S.M.; Lay, M.D.H.; Jamieson, D.N.

    2004-01-01

    Full text: The Ion Beam Induced Charge (IBIC) technique is a very sensitive tool for investigating the electronic properties of semiconductor materials and devices. However, obtaining quantitative information from IBIC experiments requires an accurate model of the materials properties. The interaction of high energy ions with crystalline materials is known to create point defects within the crystal. A significant proportion of defects introduced by the interaction of the ion with the crystal are electrically active and are therefore an important consideration when undertaking an IBIC experiment. The goal of this work is to investigate the possibility of including the relevant defect parameters in computer simulations of the IBIC experiment implemented using Technology Computer Aided Design (TCAD) software. We will present the results from an IBIC study on Si Schottky diodes using 1 MeV alphas. A reduction of greater than 50% in the detected IBIC signal was observed for fluences greater than 5x10 10 He + /cm 2 . The trap parameters following ion irradiation were determined experimentally using DLTS. Comparisons between the experimental IBIC results and TCAD simulations will be discussed

  4. Sensory flow shaped by active sensing: sensorimotor strategies in electric fish.

    Science.gov (United States)

    Hofmann, Volker; Sanguinetti-Scheck, Juan I; Künzel, Silke; Geurten, Bart; Gómez-Sena, Leonel; Engelmann, Jacob

    2013-07-01

    Goal-directed behavior in most cases is composed of a sequential order of elementary motor patterns shaped by sensorimotor contingencies. The sensory information acquired thus is structured in both space and time. Here we review the role of motion during the generation of sensory flow focusing on how animals actively shape information by behavioral strategies. We use the well-studied examples of vision in insects and echolocation in bats to describe commonalities of sensory-related behavioral strategies across sensory systems, and evaluate what is currently known about comparable active sensing strategies in electroreception of electric fish. In this sensory system the sensors are dispersed across the animal's body and the carrier source emitting energy used for sensing, the electric organ, is moved while the animal moves. Thus ego-motions strongly influence sensory dynamics. We present, for the first time, data of electric flow during natural probing behavior in Gnathonemus petersii (Mormyridae), which provide evidence for this influence. These data reveal a complex interdependency between the physical input to the receptors and the animal's movements, posture and objects in its environment. Although research on spatiotemporal dynamics in electrolocation is still in its infancy, the emerging field of dynamical sensory systems analysis in electric fish is a promising approach to the study of the link between movement and acquisition of sensory information.

  5. Electrical degradation of double-Schottky barrier in ZnO varistors

    Energy Technology Data Exchange (ETDEWEB)

    He, Jinliang, E-mail: hejl@tsinghua.edu.cn; Cheng, Chenlu; Hu, Jun [The State Key Lab of Power System, Department of Electrical Engineering, Tsinghua University, Beijing 100084 (China)

    2016-03-15

    Researches on electrical degradation of double-Schottky barrier in ZnO varistors are reviewed, aimed at the constitution of a full picture of universal degradation mechanism within the perspective of defect. Recent advances in study of ZnO materials by atomic-scale first-principles calculations are partly included and discussed, which brings to our attention distinct cognition on the native point defects and their profound impact on degradation.

  6. Rail inspection of RCF defects

    Directory of Open Access Journals (Sweden)

    Z. Popović

    2013-10-01

    Full Text Available Rail defects due to rolling contact fatigue (RCF threaten the traffic safety around the world. That hazard is more distinct on railways without adequate maintenance strategy. Realization of interoperability of European railway network demands from every infrastructure manager to have a maintenance plan for the infrastructure subsystem. Besides that, this plan includes rail inspection and strategy against RCF defects. This paper emphasizes the importance of rail inspection and early detection of RCF because the most of RCF crack should be removed in rail grinding campaigns (preventive, cyclical and corrective activities during the whole rail service life.

  7. Lipid binding defects and perturbed synaptogenic activity of a Collybistin R290H mutant that causes epilepsy and intellectual disability.

    Science.gov (United States)

    Papadopoulos, Theofilos; Schemm, Rudolf; Grubmüller, Helmut; Brose, Nils

    2015-03-27

    Signaling at nerve cell synapses is a key determinant of proper brain function, and synaptic defects--or synaptopathies--are at the basis of many neurological and psychiatric disorders. In key areas of the mammalian brain, such as the hippocampus or the basolateral amygdala, the clustering of the scaffolding protein Gephyrin and of γ-aminobutyric acid type A receptors at inhibitory neuronal synapses is critically dependent upon the brain-specific guanine nucleotide exchange factor Collybistin (Cb). Accordingly, it was discovered recently that an R290H missense mutation in the diffuse B-cell lymphoma homology domain of Cb, which carries the guanine nucleotide exchange factor activity, leads to epilepsy and intellectual disability in human patients. In the present study, we determined the mechanism by which the Cb(R290H) mutation perturbs inhibitory synapse formation and causes brain dysfunction. Based on a combination of biochemical, cell biological, and molecular dynamics simulation approaches, we demonstrate that the R290H mutation alters the strength of intramolecular interactions between the diffuse B-cell lymphoma homology domain and the pleckstrin homology domain of Cb. This defect reduces the phosphatidylinositol 3-phosphate binding affinity of Cb, which limits its normal synaptogenic activity. Our data indicate that impairment of the membrane lipid binding activity of Cb and a consequent defect in inhibitory synapse maturation represent a likely molecular pathomechanism of epilepsy and mental retardation in humans. © 2015 by The American Society for Biochemistry and Molecular Biology, Inc.

  8. Lévy noise improves the electrical activity in a neuron under electromagnetic radiation.

    Science.gov (United States)

    Wu, Juan; Xu, Yong; Ma, Jun

    2017-01-01

    As the fluctuations of the internal bioelectricity of nervous system is various and complex, the external electromagnetic radiation induced by magnet flux on membrane can be described by the non-Gaussian type distribution of Lévy noise. Thus, the electrical activities in an improved Hindmarsh-Rose model excited by the external electromagnetic radiation of Lévy noise are investigated and some interesting modes of the electrical activities are exhibited. The external electromagnetic radiation of Lévy noise leads to the mode transition of the electrical activities and spatial phase, such as from the rest state to the firing state, from the spiking state to the spiking state with more spikes, and from the spiking state to the bursting state. Then the time points of the firing state versus Lévy noise intensity are depicted. The increasing of Lévy noise intensity heightens the neuron firing. Also the stationary probability distribution functions of the membrane potential of the neuron induced by the external electromagnetic radiation of Lévy noise with different intensity, stability index and skewness papremeters are analyzed. Moreover, through the positive largest Lyapunov exponent, the parameter regions of chaotic electrical mode of the neuron induced by the external electromagnetic radiation of Lévy noise distribution are detected.

  9. Lévy noise improves the electrical activity in a neuron under electromagnetic radiation.

    Directory of Open Access Journals (Sweden)

    Juan Wu

    Full Text Available As the fluctuations of the internal bioelectricity of nervous system is various and complex, the external electromagnetic radiation induced by magnet flux on membrane can be described by the non-Gaussian type distribution of Lévy noise. Thus, the electrical activities in an improved Hindmarsh-Rose model excited by the external electromagnetic radiation of Lévy noise are investigated and some interesting modes of the electrical activities are exhibited. The external electromagnetic radiation of Lévy noise leads to the mode transition of the electrical activities and spatial phase, such as from the rest state to the firing state, from the spiking state to the spiking state with more spikes, and from the spiking state to the bursting state. Then the time points of the firing state versus Lévy noise intensity are depicted. The increasing of Lévy noise intensity heightens the neuron firing. Also the stationary probability distribution functions of the membrane potential of the neuron induced by the external electromagnetic radiation of Lévy noise with different intensity, stability index and skewness papremeters are analyzed. Moreover, through the positive largest Lyapunov exponent, the parameter regions of chaotic electrical mode of the neuron induced by the external electromagnetic radiation of Lévy noise distribution are detected.

  10. Can Neural Activity Propagate by Endogenous Electrical Field?

    Science.gov (United States)

    Qiu, Chen; Shivacharan, Rajat S.; Zhang, Mingming

    2015-01-01

    It is widely accepted that synaptic transmissions and gap junctions are the major governing mechanisms for signal traveling in the neural system. Yet, a group of neural waves, either physiological or pathological, share the same speed of ∼0.1 m/s without synaptic transmission or gap junctions, and this speed is not consistent with axonal conduction or ionic diffusion. The only explanation left is an electrical field effect. We tested the hypothesis that endogenous electric fields are sufficient to explain the propagation with in silico and in vitro experiments. Simulation results show that field effects alone can indeed mediate propagation across layers of neurons with speeds of 0.12 ± 0.09 m/s with pathological kinetics, and 0.11 ± 0.03 m/s with physiologic kinetics, both generating weak field amplitudes of ∼2–6 mV/mm. Further, the model predicted that propagation speed values are inversely proportional to the cell-to-cell distances, but do not significantly change with extracellular resistivity, membrane capacitance, or membrane resistance. In vitro recordings in mice hippocampi produced similar speeds (0.10 ± 0.03 m/s) and field amplitudes (2.5–5 mV/mm), and by applying a blocking field, the propagation speed was greatly reduced. Finally, osmolarity experiments confirmed the model's prediction that cell-to-cell distance inversely affects propagation speed. Together, these results show that despite their weak amplitude, electric fields can be solely responsible for spike propagation at ∼0.1 m/s. This phenomenon could be important to explain the slow propagation of epileptic activity and other normal propagations at similar speeds. SIGNIFICANCE STATEMENT Neural activity (waves or spikes) can propagate using well documented mechanisms such as synaptic transmission, gap junctions, or diffusion. However, the purpose of this paper is to provide an explanation for experimental data showing that neural signals can propagate by means other than synaptic

  11. A model for the scattering of high-frequency electromagnetic fields from dielectrics exhibiting thermally-activated electrical losses

    Science.gov (United States)

    Hann, Raiford E.

    1991-01-01

    An equivalent circuit model (ECM) approach is used to predict the scattering behavior of temperature-activated, electrically lossy dielectric layers. The total electrical response of the dielectric (relaxation + conductive) is given by the ECM and used in combination with transmission line theory to compute reflectance spectra for a Dallenbach layer configuration. The effects of thermally-activated relaxation processes on the scattering properties is discussed. Also, the effect of relaxation and conduction activation energy on the electrical properties of the dielectric is described.

  12. Phased array UT (Ultrasonic Testing) used in electricity production plants

    International Nuclear Information System (INIS)

    Kodaira, Takeshi

    2012-01-01

    Phased Array-Ultrasonic testing techniques widely used for detection and quantitative determination of the lattice defects which have been formed from fatigues or stress corrosion cracking in the materials used in the electricity production plants are presented with particular focus on the accurate determination of the defects depth (sizing) and defects discrimination applicable to weld metals of austenite stainless steels and Ni base alloys. The principle of this non-destructive analysis is briefly explained, followed by point and matrix focus phased array methods developed by Mitsubishi Heavy Industries, Ltd are explained rather in detail with illustration and the evaluated results. (S. Ohno)

  13. Electrical Vehicles Activities Around the World

    DEFF Research Database (Denmark)

    Schauer, Gerd; Garcia-Valle, Rodrigo

    2013-01-01

    engine. In the 1990s research and demonstrations intensified and built a good basis for actual development of electrical vehicles. Discussion of the results achieved and lessons learned from millions of kilometers of road testing is worthwhile but in addition to technological developments such as light...... which have jointly changed how mobility is viewed in recent years. We describe key points concerning such field testing and the renaissance in electric vehicles that occurred around 2010. We discuss progress in lithium battery technology for high power and high energy density, improvement in integrated...... business models, and the availability of high-performance electric vehicles have become key enablers of this new technology. In this regard, it is promising that electric vehicles will soon be a part of a green transport solution (green mobility) powered by renewable energy and a new smart electricity...

  14. Vasoactive intestinal peptide and electrical activity influence neuronal survival

    International Nuclear Information System (INIS)

    Brenneman, D.E.; Eiden, L.E.

    1986-01-01

    Blockage of electrical activity in dissociated spinal cord cultures results in a significant loss of neurons during a critical period in development. Decreases in neuronal cell numbers and 125 I-labeled tetanus toxin fixation produced by electrical blockage with tetrodotoxin (TTX) were prevented by addition of vasoactive intestinal peptide (VIP) to the nutrient medium. The most effective concentration of VIP was 0.1 nM. At higher concentrations, the survival-enhancing effect of VIP on TTX-treated cultures was attenuated. Addition of the peptide alone had no significant effect on neuronal cell counts or tetanus toxin fixation. With the same experimental conditions, two closely related peptides, PHI-27 (peptide, histidyl-isoleucine amide) and secretin, were found not to increase the number of neurons in TTX-treated cultures. Interference with VIP action by VIP antiserum resulted in neuronal losses that were not significantly different from those observed after TTX treatment. These data indicate that under conditions of electrical blockade a neurotrophic action of VIP on neuronal survival can be demonstrated

  15. Defect mediated reversible ferromagnetism in Co and Mn doped zinc oxide epitaxial films

    Energy Technology Data Exchange (ETDEWEB)

    Mal, Siddhartha; Nori, Sudhakar; Narayan, J. [Department of Material Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695 (United States); Mula, Suhrit [Department of Material Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695 (United States); Department of Metallurgical and Materials Engineering, National Institute of Technology, Rourkela 769008 (India); Prater, J. T. [Materials Science Division, Army Research Office, Research Triangle Park, North Carolina 27709 (United States)

    2012-12-01

    We have introduced defects in ZnO (undoped and doped with Co and Mn) epitaxial thin films using laser irradiation from nanosecond laser pulses and thermal annealing in oxygen ambient. In contrast to the as grown samples, the laser irradiated films show a significant increase in conductivity, enhancement in UV emission, while maintaining the same wurtzite crystal structure. Room-temperature ferromagnetism (RTFM) is observed in laser-irradiated samples, which increased with the number of laser pulses up to a certain value where magnetic moment saturates. The induced ferromagnetism as well as the enhanced electrical conductivity can be reversed with thermal annealing in oxygen ambient. The magnetization in Co and Mn doped films was found to be strong function of growth conditions and defect concentration. X-ray diffraction and optical absorption experiments suggested a 2+ valance state and tetrahedral coordination for both Co and Mn ions. There is a simultaneous increase in n-type electrical conductivity with the number of laser pulses and continue to exhibit semiconducting behavior in both undoped and doped films. The saturation magnetization was found to be 0.08 {mu}{sub B}/Co and 0.05 {mu}{sub B}/Mn, much lower than 3.0 {mu}{sub B}/Co and 5.0 {mu}{sub B}/Mn, indicating the prominent role of intrinsic defects in RTFM with some contribution from Co{sup 2+}-oxygen vacancy complexes. We propose a unified mechanism based upon introduction of intrinsic defects to explain RTFM and n-type conductivity enhancements during pulsed laser and thermal annealing.

  16. Function of TiO2 Lattice Defects toward Photocatalytic Processes: View of Electronic Driven Force

    Directory of Open Access Journals (Sweden)

    Huanan Cui

    2013-01-01

    Full Text Available Oxygen vacancies and Ti-related defects (OTDs are the main lattice defects of TiO2, which have great influence on its photocatalytic activity. To understand the relationship between the defects and photocatalytic activities, detailed discussions based on the electronic driven force provided by these defects are carried out during the three commonly accepted processes in photocatalytic reactions. It is found that these defects inevitably (i influence the energy structure of the pristine TiO2 as the isolate acceptor/donor level or hybrid with the original orbital, (ii provide a disordered short-range force that confuses the charge carriers transferring to surface active sites, (iii act not only as the surface active sites for trapping the charge carriers but also as the main chemisorption sites for O2, H2O, and organic species. These effects of the defects make them one of the key factors that determine the efficiency of heterogeneous photocatalysis. Clarifying the role of the defects will further facilitate the exploration and the construction of high-performance photocatalysts for practical applications.

  17. Electrically aligned cellulose film for electro-active paper and its piezoelectricity

    International Nuclear Information System (INIS)

    Yun, Sungryul; Jang, Sangdong; Yun, Gyu-Young; Kim, Jaehwan

    2009-01-01

    Electrically aligned regenerated cellulose films were fabricated and the effect of applied electric field was investigated for the piezoelectricity of electro-active paper (EAPap). The EAPap was fabricated by coating gold electrodes on both sides of regenerated cellulose film. The cellulose film was prepared by dissolving cotton pulp in LiCl/N,N-dimethylacetamide solution followed by a cellulose chain regeneration process. During the regeneration process an external electric field was applied in the direction of mechanical stretching. Alignment of cellulose fiber chains was investigated as a function of applied electric field. The material characteristics of the cellulose films were analyzed by using an x-ray diffractometer, a field emission scanning electron microscope and a high voltage electron microscope. The application of external electric fields was found to induce formation of nanofibers in the cellulose, resulting in an increase in the crystallinity index (CI) values. It was also found that samples with higher CI values showed higher in-plane piezoelectric constant, d 31 , values. The piezoelectricity of the current EAPap films was measured to be equivalent or better than that of ordinary PVDF films. Therefore, an external electric field applied to a cellulose film along with a mechanical stretching during the regeneration process can enhance the piezoelectricity. (technical note)

  18. Neural electrical activity and neural network growth.

    Science.gov (United States)

    Gafarov, F M

    2018-05-01

    The development of central and peripheral neural system depends in part on the emergence of the correct functional connectivity in its input and output pathways. Now it is generally accepted that molecular factors guide neurons to establish a primary scaffold that undergoes activity-dependent refinement for building a fully functional circuit. However, a number of experimental results obtained recently shows that the neuronal electrical activity plays an important role in the establishing of initial interneuronal connections. Nevertheless, these processes are rather difficult to study experimentally, due to the absence of theoretical description and quantitative parameters for estimation of the neuronal activity influence on growth in neural networks. In this work we propose a general framework for a theoretical description of the activity-dependent neural network growth. The theoretical description incorporates a closed-loop growth model in which the neural activity can affect neurite outgrowth, which in turn can affect neural activity. We carried out the detailed quantitative analysis of spatiotemporal activity patterns and studied the relationship between individual cells and the network as a whole to explore the relationship between developing connectivity and activity patterns. The model, developed in this work will allow us to develop new experimental techniques for studying and quantifying the influence of the neuronal activity on growth processes in neural networks and may lead to a novel techniques for constructing large-scale neural networks by self-organization. Copyright © 2018 Elsevier Ltd. All rights reserved.

  19. Sensitivity of on-resistance and threshold voltage to buffer-related deep level defects in AlGaN/GaN high electron mobility transistors

    International Nuclear Information System (INIS)

    Armstrong, Andrew M; Allerman, Andrew A; Baca, Albert G; Sanchez, Carlos A

    2013-01-01

    The influence of deep levels defects located in highly resistive GaN:C buffers on the on-resistance (R ON ) and threshold voltage (V th ) of AlGaN/GaN high electron mobility transistors (HEMTs) power devices was studied by a combined photocapacitance deep level optical spectroscopy (C-DLOS) and photoconductance deep level optical spectroscopy (G-DLOS) methodology as a function of electrical stress. Two carbon-related deep levels at 1.8 and 2.85 eV below the conduction band energy minimum were identified from C-DLOS measurements under the gate electrode. It was found that buffer-related defects under the gate shifted V th positively by approximately 10%, corresponding to a net areal density of occupied defects of 8 × 10 12 cm −2 . The effect of on-state drain stress and off-state gate stress on buffer deep level occupancy and R ON was also investigated via G-DLOS. It was found that the same carbon-related deep levels observed under the gate were also active in the access region. Off-state gate stress produced significantly more trapping and degradation of R ON (∼140%) compared to on-state drain stress (∼75%). Greater sensitivity of R ON to gate stress was explained by a more sharply peaked lateral distribution of occupied deep levels between the gate and drain compared to drain stress. The overall greater sensitivity of R ON compared to V th to buffer defects suggests that electron trapping is significantly greater in the access region compared to under the gate, likely due to the larger electric fields in the latter region. (invited paper)

  20. Study of defect characteristics essential for NDT testing methods ET, UT and RT

    International Nuclear Information System (INIS)

    Wirdelius, H.; Oesterberg, Elena

    2000-10-01

    This paper presents results from a literature review of defect characteristics essential for nondestructive testing (NDT). Most of the major NDT methods are included in the study - ultrasonic testing (UT), radiography (RT) and eddy current testing (ET). The study was performed by means of searching in scientific databases, technical journals, conference proceedings etc. Mainly the following databases were used: CHANS (Chalmers database), INSPEC, NTIS, Ei Compendex, World Surface Coating Abs, METADEX, JICST-Eplus, Aerospace database, Pascal, Eng Materials, SciSearch and Weldasearch. It is concluded that for eddy current testing, the defect geometry, the defect size and the defect orientation influence the outcome signal. A number of investigations address the relationships between the defect parameters like defect depth, length and width and the outcome signal parameters like amplitude, phase and signal shape. Also the phenomena of the electrical contacts between the defect surfaces (for a crack) was studied. Defect parameters that are essential to the quality of ultrasonic testing are defect position in the object (includes the depth), orientation, size, crack surface roughness, closure and tip radius. This investigation has been focused on those parameters that are not that easy to reconstruct and only briefly discussed the influence on the signal response due to defect position, orientation and size. When it comes to radiographic techniques, the most important defect related parameters that influence the quality are the difference in radio opacity of the specimen and defect and the angle between the volumetric extension of the defect and the direction of projection. The defect gape and the morphology of the crack are also very essential parameters. A very simple model of the detectability as a function of depth, width and misorientation (angle to the radiation beam) has been validated and to some extent also verified in a number of papers. Even for defects with

  1. Density functional study the interaction of oxygen molecule with defect sites of graphene

    Energy Technology Data Exchange (ETDEWEB)

    Qi Xuejun [State Key Laboratory of Coal Combustion, Wuhan 430074 (China); Guo Xin, E-mail: guoxin@mail.hust.edu.cn [State Key Laboratory of Coal Combustion, Wuhan 430074 (China); Zheng Chuguang [State Key Laboratory of Coal Combustion, Wuhan 430074 (China)

    2012-10-15

    Highlights: Black-Right-Pointing-Pointer The defect sites existed on the graphite surface create active sites and enhance the reactivity of carbonaceous material. Black-Right-Pointing-Pointer Oxygen molecule more favor chemisorbed on the graphene surface contains defect sites than the perfect surface. Black-Right-Pointing-Pointer The single active oxygen atom adsorbed on the defect surfaces, it completely insert into the surface. - Abstract: The present article reports a theoretical study of oxygen interacted with graphene surface containing defect sites on the atomic level by employing the density functional theory combined with the graphene cluster model. It was founded that oxygen molecule prefers to be chemisorbed on the graphene surface containing defect sites compared to the perfect surface. The adsorption energy of O{sub 2} on the double defect site is about 2.5 times as large as that on the perfect graphene surface. Moreover, the oxygen molecule interacts with S-W defect site gives rise to stable epoxy structure, which pulling the carbon atom outward from the original site in the direction perpendicular to the surface. If the oxygen molecule is adsorbed on the single vacancy site, two C-O bonds are formed on the graphene surface. However, when the oxygen molecule is chemisorbed on the double vacancy site, the oxygen atoms substitute the missing carbon atom's position in the carbon plane and form a hexagonal structure on the graphene network. The results indicate that single active oxygen atom approaches the defect site, it's completely adsorbed in the plane and high energy is released. In all cases, the interaction of an oxygen atom with defect surface involves an exothermic process. The defect site creates active sites on the surface of graphene and produces catalytic effects during the process of oxidation of carbonaceous materials.

  2. Correlation between electron-irradiation defects and applied stress in graphene: A molecular dynamics study

    Energy Technology Data Exchange (ETDEWEB)

    Kida, Shogo; Yamamoto, Masaya; Kawata, Hiroaki; Hirai, Yoshihiko; Yasuda, Masaaki, E-mail: yasuda@pe.osakafu-u.ac.jp [Department of Physics and Electronics, Osaka Prefecture University, Sakai, Osaka 599-8531 (Japan); Tada, Kazuhiro [Department of Electrical and Control Systems Engineering, National Institute of Technology, Toyama College, Toyama 939-8630 (Japan)

    2015-09-15

    Molecular dynamics (MD) simulations are performed to study the correlation between electron irradiation defects and applied stress in graphene. The electron irradiation effect is introduced by the binary collision model in the MD simulation. By applying a tensile stress to graphene, the number of adatom-vacancy (AV) and Stone–Wales (SW) defects increase under electron irradiation, while the number of single-vacancy defects is not noticeably affected by the applied stress. Both the activation and formation energies of an AV defect and the activation energy of an SW defect decrease when a tensile stress is applied to graphene. Applying tensile stress also relaxes the compression stress associated with SW defect formation. These effects induced by the applied stress cause the increase in AV and SW defect formation under electron irradiation.

  3. Studies of defects and defect agglomerates by positron annihilation spectroscopy

    DEFF Research Database (Denmark)

    Eldrup, Morten Mostgaard; Singh, B.N.

    1997-01-01

    A brief introduction to positron annihilation spectroscopy (PAS), and in particular lo its use for defect studies in metals is given. Positrons injected into a metal may become trapped in defects such as vacancies, vacancy clusters, voids, bubbles and dislocations and subsequently annihilate from...... the trapped state iri the defect. The annihilation characteristics (e.g., the lifetime of the positron) can be measured and provide information about the nature of the defect (e.g., size, density, morphology). The technique is sensitive to both defect size (in the range from monovacancies up to cavities...

  4. High polysilicon TFT field effect mobility reached thanks to slight phosphorus content in the active layer

    International Nuclear Information System (INIS)

    Zaghdoudi, M.; Rogel, R.; Alzaied, N.; Fathallah, M.; Mohammed-Brahim, T.

    2008-01-01

    The paper deals with the effect of slightly phosphorus atoms introduced during deposition of polysilicon films. Polysilicon films are used as an active layer in thin film transistors (TFTs) fabricated on glass substrates at a maximum temperature of 600 deg. C.Three phosphorus atoms contents, determined by the value of the phosphine to silane ratio: Γ (3.7 x 10 -7 , 8 x 10 -7 , 26 x 10 -6 ), are used to optimize the active layer quality. The in-situ doped layers induce a better stability of the electrical characteristics, a higher mobility and lower value of the threshold voltage for the slightly doped active layers [M. Zaghdoudi, M.M. Abdelkrim, M. Fathallah, T. Mohammed-Brahim and F. Le-Bihan Control of the weak phosphorus doping in polysilicon, Materials Science and Forum, Vols. 480-481 (2005) pp.305.]. The present work shows that the effect of slightly phosphorus content improves the quality of oxide/polysilicon interface and decreases the defects density. Degradation of electrical properties is shown to originate from the creation of defect at the channel-interface oxide and in the grain boundaries. The effect of temperature change on the electrical properties was studied and the behaviour was also analyzed

  5. Dissociation and diffusion of hydrogen on defect-free and vacancy defective Mg (0001) surfaces: A density functional theory study

    Energy Technology Data Exchange (ETDEWEB)

    Han, Zongying [College of Chemical and Environmental Engineering, Shandong University of Science and Technology, Qingdao 266590 (China); Union Research Center of Fuel Cell, School of Chemical and Environmental Engineering, China University of Mining and Technology, Beijing 100083 (China); Chen, Haipeng [College of Chemical and Environmental Engineering, Shandong University of Science and Technology, Qingdao 266590 (China); College of Mechanical and Electronic Engineering, Shandong University of Science and Technology, Qingdao 266590 (China); Zhou, Shixue, E-mail: zhoushixue66@163.com [College of Chemical and Environmental Engineering, Shandong University of Science and Technology, Qingdao 266590 (China); College of Mechanical and Electronic Engineering, Shandong University of Science and Technology, Qingdao 266590 (China)

    2017-02-01

    Highlights: • Clarify the effect of vacancy defect on H{sub 2} dissociation on Mg (0001) surface. • Demonstrate the effects of vacancy defect on H atom diffusion. • Reveal the minimum energy diffusion path of H atom from magnesium surface into bulk. - Abstract: First-principles calculations with the density functional theory (DFT) have been carried out to study dissociation and diffusion of hydrogen on defect-free and vacancy defective Mg (0001) surfaces. Results show that energy barriers of 1.42 eV and 1.28 eV require to be overcome for H{sub 2} dissociation on defect-free and vacancy defective Mg (0001) surfaces respectively, indicating that reactivity of Mg (0001) surface is moderately increased due to vacancy defect. Besides, the existence of vacancy defect changes the preferential H atom diffusion entrance to the subsurface and reduces the diffusion energy barrier. An interesting remark is that the minimum energy diffusion path of H atom from magnesium surface into bulk is a spiral channel formed by staggered octahedral and tetrahedral interstitials. The diffusion barriers computed for H atom penetration from the surface into inner-layers are all less than 0.70 eV, which is much smaller than the activation energy for H{sub 2} dissociation on the Mg (0001) surface. This suggests that H{sub 2} dissociation is more likely than H diffusion to be rate-limiting step for magnesium hydrogenation.

  6. The Challenge Posed by Geomagnetic Activity to Electric Power Reliability: Evidence From England and Wales

    Science.gov (United States)

    Forbes, Kevin F.; St. Cyr, O. C.

    2017-10-01

    This paper addresses whether geomagnetic activity challenged the reliability of the electric power system during part of the declining phase of solar cycle 23. Operations by National Grid in England and Wales are examined over the period of 11 March 2003 through 31 March 2005. This paper examines the relationship between measures of geomagnetic activity and a metric of challenged electric power reliability known as the net imbalance volume (NIV). Measured in megawatt hours, NIV represents the sum of all energy deployments initiated by the system operator to balance the electric power system. The relationship between geomagnetic activity and NIV is assessed using a multivariate econometric model. The model was estimated using half-hour settlement data over the period of 11 March 2003 through 31 December 2004. The results indicate that geomagnetic activity had a demonstrable effect on NIV over the sample period. Based on the parameter estimates, out-of-sample predictions of NIV were generated for each half hour over the period of 1 January to 31 March 2005. Consistent with the existence of a causal relationship between geomagnetic activity and the electricity market imbalance, the root-mean-square error of the out-of-sample predictions of NIV is smaller; that is, the predictions are more accurate, when the statistically significant estimated effects of geomagnetic activity are included as drivers in the predictions.

  7. Concrete protection from sodium spills by intentionally defected liners, small-scale tests S9 and S10

    International Nuclear Information System (INIS)

    Hilliard, R.K.; Boehmer, W.D.

    1975-07-01

    Two small scale tests were performed to determine the protection against sodium attack afforded to a concrete surface by a defected steel liner. An inert atmosphere was maintained over the sodium pool, which was heated electrically to 1600 0 F for 2--6 hrs in one test, to 1380 0 F for 19 hrs in the other. The 10 inch diameter vertical concrete surface was separated from the sodium by a liner plate in which small defects had been drilled. The plates provided significant protection against direct chemical attack, but most of the water was released from the concrete through the defects to react in the sodium pool region. The liners were corroded significantly in the defect areas. (U.S.)

  8. Defect modelling

    International Nuclear Information System (INIS)

    Norgett, M.J.

    1980-01-01

    Calculations, drawing principally on developments at AERE Harwell, of the relaxation about lattice defects are reviewed with emphasis on the techniques required for such calculations. The principles of defect modelling are outlined and various programs developed for defect simulations are discussed. Particular calculations for metals, ionic crystals and oxides, are considered. (UK)

  9. Electrical activity during the 2006 Mount St. Augustine volcanic eruptions

    Science.gov (United States)

    Thomas, Ronald J.; Krehbiel, Paul R.; Rison, William; Edens, H. E.; Aulich, G. D.; McNutt, S.R.; Tytgat, Guy; Clark, E.

    2007-01-01

    By using a combination of radio frequency time-of-arrival and interferometer measurements, we observed a sequence of lightning and electrical activity during one of Mount St. Augustine's eruptions. The observations indicate that the electrical activity had two modes or phases. First, there was an explosive phase in which the ejecta from the explosion appeared to be highly charged upon exiting the volcano, resulting in numerous apparently disorganized discharges and some simple lightning. The net charge exiting the volcano appears to have been positive. The second phase, which followed the most energetic explosion, produced conventional-type discharges that occurred within plume. Although the plume cloud was undoubtedly charged as a result of the explosion itself, the fact that the lightning onset was delayed and continued after and well downwind of the eruption indicates that in situ charging of some kind was occurring, presumably similar in some respects to that which occurs in normal thunderstorms.

  10. Radio Emissions from Electrical Activity in Martian Dust Storms

    Science.gov (United States)

    Majid, W.; Arabshahi, S.; Kocz, J.; Schulter, T.; White, L.

    2017-12-01

    Dust storms on Mars are predicted to be capable of producing electrostatic fields and discharges, even larger than those in dust storms on Earth. There are three key elements in the characterization of Martian electrostatic discharges: dependence on Martian environmental conditions, event rate, and the strength of the generated electric fields. The detection and characterization of electric activity in Martian dust storms has important implications for habitability, and preparations for human exploration of the red planet. Furthermore, electrostatic discharges may be linked to local chemistry and plays an important role in the predicted global electrical circuit. Because of the continuous Mars telecommunication needs of NASA's Mars-based assets, the Deep Space Network (DSN) is the only facility in the world that combines long term, high cadence, observing opportunities with large sensitive telescopes, making it a unique asset worldwide in searching for and characterizing electrostatic activity from large scale convective dust storms at Mars. We will describe a newly inaugurated program at NASA's Madrid Deep Space Communication Complex to carry out a long-term monitoring campaign to search for and characterize the entire Mars hemisphere for powerful discharges during routine tracking of spacecraft at Mars on an entirely non-interfering basis. The ground-based detections will also have important implications for the design of a future instrument that could make similar in-situ measurements from orbit or from the surface of Mars, with far greater sensitivity and duty cycle, opening up a new window in our understanding of the Martian environment.

  11. Possibilities for Estimating Horizontal Electrical Currents in Active Regions on the Sun

    Science.gov (United States)

    Fursyak, Yu. A.; Abramenko, V. I.

    2017-12-01

    Part of the "free" magnetic energy associated with electrical current systems in the active region (AR) is released during solar flares. This proposition is widely accepted and it has stimulated interest in detecting electrical currents in active regions. The vertical component of an electric current in the photosphere can be found by observing the transverse magnetic field. At present, however, there are no direct methods for calculating transverse electric currents based on these observations. These calculations require information on the field vector measured simultaneously at several levels in the photosphere, which has not yet been done with solar instrumentation. In this paper we examine an approach to calculating the structure of the square of the density of a transverse electrical current based on a magnetogram of the vertical component of the magnetic field in the AR. Data obtained with the Helioseismic and Magnetic Imager (HMI) on board the Solar Dynamic Observatory (SDO) for the AR of NOAA AR 11283 are used. It is shown that (1) the observed variations in the magnetic field of a sunspot and the proposed estimate of the density of an annular horizontal current around the spot are consistent with Faraday's law and (2) the resulting estimates of the magnitude of the square of the density of the horizontal current {j}_{\\perp}^2 = (0.002- 0.004) A2/m4 are consistent with previously obtained values of the density of a vertical current in the photosphere. Thus, the proposed estimate is physically significant and this method can be used to estimate the density and structure of transverse electrical currents in the photosphere.

  12. Effect of B doping on optical, electrical properties and defects of ZnO films

    Energy Technology Data Exchange (ETDEWEB)

    Mao, Caiying [State Key Laboratory of Mechanical Transmission, College of Physics, Chongqing University, Chongqing, 400044 (China); Fang, Liang, E-mail: lfang@cqu.edu.cn [State Key Laboratory of Mechanical Transmission, College of Physics, Chongqing University, Chongqing, 400044 (China); Zhang, Hong; Li, Wanjun [Key Laboratory of Optoelectronic Functional Materials of Chongqing, College of Physics and Electronic Engineering, Chongqing Normal University, Chongqing 401331 (China); Wu, Fang, E-mail: fang01234@163.com [State Key Laboratory of Mechanical Transmission, College of Physics, Chongqing University, Chongqing, 400044 (China); Qin, Guoping [Key Laboratory of Optoelectronic Functional Materials of Chongqing, College of Physics and Electronic Engineering, Chongqing Normal University, Chongqing 401331 (China); Ruan, Haibo, E-mail: rhbcqu@aliyun.com [Chongqing Key Laboratory of Micro/Nano Materials Engineering and Technology, Research Center for Materials Interdisciplinary Sciences, Chongqing University of Arts and Sciences, Chongqing, 402160 (China); Kong, Chunyang, E-mail: kchy@163.com [Key Laboratory of Optoelectronic Functional Materials of Chongqing, College of Physics and Electronic Engineering, Chongqing Normal University, Chongqing 401331 (China)

    2016-08-15

    Boron doped ZnO (BZO) films with B content in the range of 0–6 at.% were deposited on quartz glass substrates by RF magnetron sputtering technique. The effects of B doping content on microstructure, optical and electrical properties of BZO films were systematically investigated by XRD, SEM, AFM, XPS, PL, UV–vis–near infrared spectrophotometer and Hall-effect measurement, respectively. It is found that the crystal quality of ZnO films can be improved as B doping content increases to no larger than 4 at.% and will be deteriorated at higher B doping content. The grain size and surface roughness of the films reduce with the increase of B doping content. The BZO films exhibit tensile stress and the stress increases with B content. The transmittance of the BZO films is revealed to be 90% in the visible region. As the B doping content increases from 0 to 6 at.%, the optical band gap of BZO films enhances from 3.28 to 3.57 eV, which is found to increase linearly with the tensile stress in the films. The lowest resistivity of 1.58 × 10{sup −3} (Ω cm) is obtained at 2 at.% B doping content. XPS and PL analyses demonstrated that B doping can promote the formation of defects of zinc interstitials (Zn{sub i}) and oxygen vacancies (V{sub O}). - Highlights: • The relationship of band gap (E{sub g}) and stress (σ) in BZO is deduced. • XPS and PL illustrate B doping can promote the formation of Zn{sub i} and V{sub O} in BZO. • The lowest resistivity (1.58 × 10{sup −3} Ω cm) is obtained at 2 at.% B content.

  13. Theoretical analysis of the influence of defect parameters on photovoltaic performances of composition graded InGaN solar cells

    International Nuclear Information System (INIS)

    Gorge, V.; Migan-Dubois, A.; Djebbour, Z.; Pantzas, K.; Gautier, S.; Moudakir, T.; Suresh, S.; Ougazzaden, A.

    2013-01-01

    Highlights: ► We have modeled a p–i–n InGaN-based solar cell with gradual bandgap layers. ► InGaN defects have been modeled by two band tails and one localized energy level. ► Energetic position and band tail widths have a low effect on device efficiency. ► The localized defect FWHM has a significant impact on performance. ► The efficiency drops radically when the defect density is higher than the P-doping. - Abstract: In this paper, we have used simulations to evaluate the impact of the distribution of electrically active defects on the photovoltaic performances of InGaN-based solar cell. The simulations were carried out using Silvaco's ATLAS software. We have modeled a P-GaN/Grad-InGaN/i-In 0.53 Ga 0.47 N/Grad-InGaN/N-ZnO where Grad-InGaN corresponds to an InGaN layer with a graded composition. This layer is inserted to eliminate the band discontinuities at the interface between InGaN and the GaN and ZnO layers. The defects were modeled through the introduction of band tails and a Gaussian distribution of defects in i-InGaN material. We have evaluated the influence of band tail widths as well as the parameters of the Gaussian distribution (i.e. defect density, mean position and standard deviation) on the short-circuit current, the open-circuit voltage and the fill-factor (efficiency) of the solar cell. These results have allowed us to identify key structural parameters useful for the optimization of InGaN solar cells, as well as to give realistic estimates of the performances of such cells.

  14. Theoretical analysis of the influence of defect parameters on photovoltaic performances of composition graded InGaN solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Gorge, V.; Migan-Dubois, A. [LGEP, UMR 8507, CNRS, SUPELEC, UPMC, Universite Paris-Sud 11, 11 rue Joliot-Curie, Plateau de Moulon, 91192 Gif-sur-Yvette Cedex (France); Djebbour, Z., E-mail: zakaria.djebbour@uvsq.fr [LGEP, UMR 8507, CNRS, SUPELEC, UPMC, Universite Paris-Sud 11, 11 rue Joliot-Curie, Plateau de Moulon, 91192 Gif-sur-Yvette Cedex (France); Department of Physics and Engineering Science, University of Versailles UVSQ, 45 Av. Des Etats Unis, 78035 Versailles (France); Pantzas, K. [Georgia Institute of Technology, GT-Lorraine, 2 rue Marconi, 57 070 Metz (France); UMI 2958 Georgia Tech, CNRS, 2 rue Marconi, 57 070 Metz (France); Gautier, S. [UMI 2958 Georgia Tech, CNRS, 2 rue Marconi, 57 070 Metz (France); LMOPS, UMR 7132, CNRS, University of Metz, Supelec, 2 rue E. Belin, 57 070 Metz (France); Moudakir, T.; Suresh, S. [UMI 2958 Georgia Tech, CNRS, 2 rue Marconi, 57 070 Metz (France); Ougazzaden, A. [Georgia Institute of Technology, GT-Lorraine, 2 rue Marconi, 57 070 Metz (France); UMI 2958 Georgia Tech, CNRS, 2 rue Marconi, 57 070 Metz (France)

    2013-02-01

    Highlights: Black-Right-Pointing-Pointer We have modeled a p-i-n InGaN-based solar cell with gradual bandgap layers. Black-Right-Pointing-Pointer InGaN defects have been modeled by two band tails and one localized energy level. Black-Right-Pointing-Pointer Energetic position and band tail widths have a low effect on device efficiency. Black-Right-Pointing-Pointer The localized defect FWHM has a significant impact on performance. Black-Right-Pointing-Pointer The efficiency drops radically when the defect density is higher than the P-doping. - Abstract: In this paper, we have used simulations to evaluate the impact of the distribution of electrically active defects on the photovoltaic performances of InGaN-based solar cell. The simulations were carried out using Silvaco's ATLAS software. We have modeled a P-GaN/Grad-InGaN/i-In{sub 0.53}Ga{sub 0.47}N/Grad-InGaN/N-ZnO where Grad-InGaN corresponds to an InGaN layer with a graded composition. This layer is inserted to eliminate the band discontinuities at the interface between InGaN and the GaN and ZnO layers. The defects were modeled through the introduction of band tails and a Gaussian distribution of defects in i-InGaN material. We have evaluated the influence of band tail widths as well as the parameters of the Gaussian distribution (i.e. defect density, mean position and standard deviation) on the short-circuit current, the open-circuit voltage and the fill-factor (efficiency) of the solar cell. These results have allowed us to identify key structural parameters useful for the optimization of InGaN solar cells, as well as to give realistic estimates of the performances of such cells.

  15. Effect of irradiation-induced defects on fusion reactor ceramics

    International Nuclear Information System (INIS)

    Clinard, F.W. Jr.

    1986-01-01

    Structural, thermal, and electrical properties critical to performance of ceramics in a fusion environment can be profoundly altered by irradiation effects. Neutron damage may cause swelling, reduction of thermal conductivity, increase in dielectric loss, and either reduction or enhancement of strength depending on the crystal structure and defect content of the material. Absorption of ionizing energy inevitably leads to degradation of insulating properties, but these changes can be reduced by alterations in structural or compositional makeup. Assessment of the irradiation response of candidate ceramics Al 2 O 3 , MgAl 2 O 4 , SiC and Si 3 N 4 shows that each may find use in advanced fusion devices. The present understanding of irradiation-induced defects in ceramics, while far from complete, nevertheless points the way to methods for developing improved materials for fusion applications

  16. Defects produced by the work hardening of magnesium and cadmium at low temperatures

    International Nuclear Information System (INIS)

    Simon, Jean-Paul; Delaplace, Jean

    1971-07-01

    Simultaneous measurements of the mechanical properties and the electrical resistivity of cadmium and magnesium samples which have been work hardened at 77 deg. K enabled the defects produced and the recovery occurring during an annealing process, to be studied. The electrical resistivity measured at 77 deg. K increased linearly with the deformation for the degrees of work hardening considered (less than 7 per cent for Cd and less than 4 per cent for Mg). Three main stages occurred in the recovery of Cd: stage A between 77 deg. K and 180 deg. K due to annealing of point defects, stage B between 180 deg. K and 240 deg. K due to the rearrangement of the dislocations and stage C above 240 deg. K due to recrystallization. Measurements of electrical resistance were made when the sample was under stress and when the stress was removed. The resistivity of both Cd and Mg changed during the removal of the load. This phenomenon is ascribed to the shortening of the dislocation segments which are bowed under stress and straighten when the stress is removed. The orders of magnitude of the dislocation density and the loop lengths obtained from this model, are reasonable [fr

  17. On-line defected fuel monitoring using GFP data

    International Nuclear Information System (INIS)

    Livingstone, S.; Lewis, B.J.

    2008-01-01

    This paper describes the initial development of an on-line defected fuel diagnostic tool. The tool is based on coolant activity, and uses a quantitative and qualitative approach from existing mechanistic fission product release models, and also empirical rules based on commercial and experimental experience. The model departs from the usual methodology of analyzing steady-state fission product coolant activities, and instead uses steady-state fission product release rates calculated from the transient coolant activity data. An example of real-time defected fuel analysis work is presented using a prototype of this tool with station data. The model is in an early developmental stage, and this paper demonstrates the promising potential of this technique. (author)

  18. Primary cellular meningeal defects cause neocortical dysplasia and dyslamination

    Science.gov (United States)

    Hecht, Jonathan H.; Siegenthaler, Julie A.; Patterson, Katelin P.; Pleasure, Samuel J.

    2010-01-01

    Objective Cortical malformations are important causes of neurological morbidity, but in many cases their etiology is poorly understood. Mice with Foxc1 mutations have cellular defects in meningeal development. We use hypomorphic and null alleles of Foxc1 to study the effect of meningeal defects on neocortical organization. Methods Embryos with loss of Foxc1 activity were generated using the hypomorphic Foxc1hith allele and the null Foxc1lacZ allele. Immunohistologic analysis was used to assess cerebral basement membrane integrity, marginal zone heterotopia formation, neuronal overmigration, meningeal defects, and changes in basement membrane composition. Dysplasia severity was quantified using two measures. Results Cortical dysplasia resembling cobblestone cortex, with basement membrane breakdown and lamination defects, is seen in Foxc1 mutants. As Foxc1 activity was reduced, abnormalities in basement membrane integrity, heterotopia formation, neuronal overmigration, and meningeal development appeared earlier in gestation and were more severe. Surprisingly, the basement membrane appeared intact at early stages of development in the face of severe deficits in meningeal development. Prominent defects in basement membrane integrity appeared as development proceeded. Molecular analysis of basement membrane laminin subunits demonstrated that loss of the meninges led to changes in basement membrane composition. Interpretation Cortical dysplasia can be caused by cellular defects in the meninges. The meninges are not required for basement membrane establishment but are needed for remodeling as the brain expands. Specific changes in basement membrane composition may contribute to subsequent breakdown. Our study raises the possibility that primary meningeal defects may cortical dysplasia in some cases. PMID:20976766

  19. A study on electric properties for pulse laser annealing of ITO film after wet etching

    International Nuclear Information System (INIS)

    Lee, C.J.; Lin, H.K.; Li, C.H.; Chen, L.X.; Lee, C.C.; Wu, C.W.; Huang, J.C.

    2012-01-01

    The electric properties of ITO thin film after UV or IR laser annealing and wet etching was analyzed via grazing incidence in-plane X-ray diffraction, scanning electron microscopy, X-ray photoelectron spectra and residual stress measurement. The laser annealing process readily induced microcracks or quasi-microcracks on the ITO thin film due to the residual tension stress of crystalline phase transformation between irradiated and non-irradiated areas, and these defects then became the preferred sites for a higher etching rate, resulting in discontinuities in the ITO thin film after the wet etching process. The discontinuities in the residual ITO thin film obstruct carrier transmission and further result in electric failure. - Highlights: ► The laser annealing process induces microcracks in InSnO 2 thin films. ► The defects result in higher local etching rate during wet etching. ► These process defects originate from residual tension stress. ► Decreasing the thermal shock is suggested in order to reduce these process defects.

  20. Artificial defects detection and location during welding

    International Nuclear Information System (INIS)

    Asty, M.

    1978-01-01

    Welding control by acoustic emission allows defects detection as soon as they are created. Acoustic testing saves time and gives better quality assurance in the case of multiple pass welding of plates. A welded joint was performed on A533B steel plates 250 mm thick by submerged arc welding. Artificial defects were implanted to determine significative parameters of acoustic reception. In operating conditions a significant acoustic activity takes place only during welding as shown by preliminary tests. At the same time an important noise is created by the arc, scories cooling and metal solidification and cooling. These problems are solved by an original processing in time-space detecting and locating defects with a good approximation [fr

  1. Electric Field Fluctuations in Water

    Science.gov (United States)

    Thorpe, Dayton; Limmer, David; Chandler, David

    2013-03-01

    Charge transfer in solution, such as autoionization and ion pair dissociation in water, is governed by rare electric field fluctuations of the solvent. Knowing the statistics of such fluctuations can help explain the dynamics of these rare events. Trajectories short enough to be tractable by computer simulation are virtually certain not to sample the large fluctuations that promote rare events. Here, we employ importance sampling techniques with classical molecular dynamics simulations of liquid water to study statistics of electric field fluctuations far from their means. We find that the distributions of electric fields located on individual water molecules are not in general gaussian. Near the mean this non-gaussianity is due to the internal charge distribution of the water molecule. Further from the mean, however, there is a previously unreported Bjerrum-like defect that stabilizes certain large fluctuations out of equilibrium. As expected, differences in electric fields acting between molecules are gaussian to a remarkable degree. By studying these differences, though, we are able to determine what configurations result not only in large electric fields, but also in electric fields with long spatial correlations that may be needed to promote charge separation.

  2. Defect pair formation in fluorine and nitrogen codoped TiO2

    Science.gov (United States)

    Kordatos, A.; Kelaidis, N.; Chroneos, A.

    2018-04-01

    Titanium oxide is extensively investigated because of its high chemical stability and its photocatalytic properties; nevertheless, the large band gap limits its activity to a small portion of the solar spectrum. Nitrogen and fluorine codoping is an efficient defect engineering strategy to increase the photocatalytic activity of titanium oxide. In the present study, we apply density functional theory to investigate the interaction of nitrogen with fluorine and the formation of defect pairs. We show that in fluorine and nitrogen codoped titanium oxide, the FiNi, FONi, and FiNTi defects can form. Their impact on the electronic structure of titanium oxide is discussed.

  3. Noncontact AFM Imaging of Atomic Defects on the Rutile TiO2 (110) Surface

    DEFF Research Database (Denmark)

    Lauritsen, Jeppe Vang

    2015-01-01

    The atomic force microscope (AFM) operated in the noncontact mode (nc-AFM) offers a unique tool for real space, atomic-scale characterisation of point defects and molecules on surfaces, irrespective of the substrate being electrically conducting or non-conducting. The nc-AFM has therefore in rece...

  4. Electronic and atomic structure of complex defects in Al- and Ga-highly doped ZnO films

    Energy Technology Data Exchange (ETDEWEB)

    Menéndez-Proupin, Eduardo [Instituto de Energía Solar, Universidad Politécnica de Madrid (UPM), Ciudad Universitaria, 28040 Madrid (Spain); Departamento de Física, Facultad de Ciencias, Universidad de Chile, Las Palmeras 3425, 780-0003 Ñuñoa, Santiago (Chile); Palacios, Pablo, E-mail: pablo.palacios@upm.es [Instituto de Energía Solar, Universidad Politécnica de Madrid (UPM), Ciudad Universitaria, 28040 Madrid (Spain); Dpt. FAIAN, E.T.S.I. Aeronáutica y del Espacio, UPM, Pz. Cardenal Cisneros 3, 28040 Madrid (Spain); Wahnón, Perla [Instituto de Energía Solar, Universidad Politécnica de Madrid (UPM), Ciudad Universitaria, 28040 Madrid (Spain); Dpt. TFO, E.T.S.I. Telecomunicación, UPM, Ciudad Universitaria, 28040 Madrid (Spain)

    2015-06-15

    Point defects in Ga- and Al-doped ZnO thin films are studied by means of first principles electronic structure calculations. Candidate defects are identified to explain recently observed differences in electrical and spectroscopic behavior of both systems. Substitutional doping in Ga–ZnO explain the metallic behavior of the electrical properties. Complexes of interstitial oxygen with substitutional Ga can behave as acceptor and cause partial compensation, as well as gap states below the conduction band minimum as observed in photoemission experiments. Zn vacancies can also act as compensating acceptors. On the other hand, the semiconducting behavior of Al–ZnO and the small variation in the optical gap compared with pure ZnO, can be explained by almost complete compensation between acceptor Zn vacancies and substitutional Al donors. Interstitial Al can also be donor levels and can be the origin of the small band observed in photoemission experiments below the Fermi level. Combinations of substitutional Al with interstitial oxygen can act simultaneously as compensating acceptor and generator of the mentioned photoemission band. The theoretical calculations have been done using density functional theory (DFT) within the generalized gradient approximation with on-site Coulomb interaction. In selected cases, DFT calculations with semilocal-exact exchange hybrid functionals have been performed. Results explain photoelectron spectra of Ga–ZnO and Al–ZnO at the corresponding doping levels. - Highlights: • Defects in Ga- and Al-heavy-doped ZnO films are studied by quantum calculations. • Defects compatible with electrical, optical, and HAXPES spectra are proposed. • Doping efficiency is reduced by Zn vacancies and O interstitials. • HAXPES bands near the Fermi level are induced by Al{sub i}, and complexes Ga{sub Zn}-O{sub i}, and Al{sub Zn}-O{sub i}.

  5. Effects of in-cascade defect clustering on near-term defect evolution

    Energy Technology Data Exchange (ETDEWEB)

    Heinisch, H.L. [Pacific Northwest National Lab., Richland, WA (United States)

    1997-08-01

    The effects of in-cascade defect clustering on the nature of the subsequent defect population are being studied using stochastic annealing simulations applied to cascades generated in molecular dynamics (MD) simulations. The results of the simulations illustrates the strong influence of the defect configuration existing in the primary damage state on subsequent defect evolution. The large differences in mobility and stability of vacancy and interstitial defects and the rapid one-dimensional diffusion of small, glissile interstitial loops produced directly in cascades have been shown to be significant factors affecting the evolution of the defect distribution. In recent work, the effects of initial cluster sizes appear to be extremely important.

  6. Extracting and identifying concrete structural defects in GPR images

    Science.gov (United States)

    Ye, Qiling; Jiao, Liangbao; Liu, Chuanxin; Cao, Xuehong; Huston, Dryver; Xia, Tian

    2018-03-01

    Traditionally most GPR data interpretations are performed manually. With the advancement of computing technologies, how to automate GPR data interpretation to achieve high efficiency and accuracy has become an active research subject. In this paper, analytical characterizations of major defects in concrete structures, including delamination, air void and moisture in GPR images, are performed. In the study, the image features of different defects are compared. Algorithms are developed for defect feature extraction and identification. For validations, both simulation results and field test data are utilized.

  7. Submicron confinement effect on electrical activation of B implanted in Si

    International Nuclear Information System (INIS)

    Bruno, E.; Mirabella, S.; Impellizzeri, G.; Priolo, F.; Giannazzo, F.; Raineri, V.; Napolitani, E.

    2005-01-01

    In this work we studied the effect of B implantation in Si through submicron laterally confined area on B clustering and its electrical activation. For this study, we implanted B 3 keV into a Si wafer grown by Molecular Beam Epitaxy (MBE) through a patterned oxide mask with opening widths down to 0.38 μm. Then, we annealed the sample at 800 deg. C for several times up to 120 min and monitored the 2D carrier profile by quantitative high resolution Scanning Capacitance Microscopy (SCM). We show that by reducing the opening widths, not only the B clustering is strongly reduced, but also the B cluster dissolution is accelerated. This demonstrates the beneficial role of implanted B confinement on the B electrical activation. The above results have a significant impact in the modern Si based electronic device engineering

  8. Microscopic study of electrical properties of CrSi2 nanocrystals in silicon

    Directory of Open Access Journals (Sweden)

    Lányi Štefan

    2011-01-01

    Full Text Available Abstract Semiconducting CrSi2 nanocrystallites (NCs were grown by reactive deposition epitaxy of Cr onto n-type silicon and covered with a 50-nm epitaxial silicon cap. Two types of samples were investigated: in one of them, the NCs were localized near the deposition depth, and in the other they migrated near the surface. The electrical characteristics were investigated in Schottky junctions by current-voltage and capacitance-voltage measurements. Atomic force microscopy (AFM, conductive AFM and scanning probe capacitance microscopy (SCM were applied to reveal morphology and local electrical properties. The scanning probe methods yielded specific information, and tapping-mode AFM has shown up to 13-nm-high large-area protrusions not seen in the contact-mode AFM. The electrical interaction of the vibrating scanning tip results in virtual deformation of the surface. SCM has revealed NCs deep below the surface not seen by AFM. The electrically active probe yielded significantly better spatial resolution than AFM. The conductive AFM measurements have shown that the Cr-related point defects near the surface are responsible for the leakage of the macroscopic Schottky junctions, and also that NCs near the surface are sensitive to the mechanical and electrical stress induced by the scanning probe.

  9. Electric-current Neutralization, Magnetic Shear, and Eruptive Activity in Solar Active Regions

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Yang; Sun, Xudong [W. W. Hansen Experimental Physics Laboratory, Stanford University, Stanford, CA 94305-4085 (United States); Török, Tibor; Titov, Viacheslav S. [Predictive Science Inc., 9990 Mesa Rim Road, Suite 170, San Diego, CA 92121 (United States); Leake, James E. [NASA Goddard Space Flight Center, Greenbelt, MD 20771 (United States)

    2017-09-01

    The physical conditions that determine whether or not solar active regions (ARs) produce strong flares and coronal mass ejections (CMEs) are not yet well understood. Here, we investigate the association between electric-current neutralization, magnetic shear along polarity inversion lines (PILs), and eruptive activity in four ARs: two emerging and two well-developed ones. We find that the CME-producing ARs are characterized by a strongly non-neutralized total current, while the total current in the ARs that did not produce CMEs is almost perfectly neutralized. The difference in the PIL shear between these two groups is much less pronounced, which suggests that the degree of current neutralization may serve as a better proxy for assessing the ability of ARs to produce CMEs.

  10. Effects of Electrical and Optogenetic Deep Brain Stimulation on Synchronized Oscillatory Activity in Parkinsonian Basal Ganglia.

    Science.gov (United States)

    Ratnadurai-Giridharan, Shivakeshavan; Cheung, Chung C; Rubchinsky, Leonid L

    2017-11-01

    Conventional deep brain stimulation of basal ganglia uses high-frequency regular electrical pulses to treat Parkinsonian motor symptoms but has a series of limitations. Relatively new and not yet clinically tested, optogenetic stimulation is an effective experimental stimulation technique to affect pathological network dynamics. We compared the effects of electrical and optogenetic stimulation of the basal gangliaon the pathologicalParkinsonian rhythmic neural activity. We studied the network response to electrical stimulation and excitatory and inhibitory optogenetic stimulations. Different stimulations exhibit different interactions with pathological activity in the network. We studied these interactions for different network and stimulation parameter values. Optogenetic stimulation was found to be more efficient than electrical stimulation in suppressing pathological rhythmicity. Our findings indicate that optogenetic control of neural synchrony may be more efficacious than electrical control because of the different ways of how stimulations interact with network dynamics.

  11. Defects in Cu(In,Ga)Se{sub 2} chalcopyrite semiconductors: a comparative study of material properties, defect states, and photovoltaic performance

    Energy Technology Data Exchange (ETDEWEB)

    Cao, Qing; Gunawan, Oki; Copel, Matthew; Reuter, Kathleen B; Chey, S Jay; Mitzi, David B [IBM T.J. Watson Research Center, Yorktown Heights, NY (United States); Deline, Vaughn R [IBM Almaden Resesarch Center, San Jose, CA (United States)

    2011-10-15

    Understanding defects in Cu(In,Ga)(Se,S){sub 2} (CIGS), especially correlating changes in the film formation process with differences in material properties, photovoltaic (PV) device performance, and defect levels extracted from admittance spectroscopy, is a critical but challenging undertaking due to the complex nature of this polycrystalline compound semiconductor. Here we present a systematic comparative study wherein varying defect density levels in CIGS films were intentionally induced by growing CIGS grains using different selenium activity levels. Material characterization results by techniques including X-ray diffraction, scanning electron microscopy, transmission electron microscopy, secondary ion mass spectrometry, X-ray photoelectron spectroscopy, and medium energy ion scattering indicate that this process variation, although not significantly affecting CIGS grain structure, crystal orientation, or bulk composition, leads to enhanced formation of a defective chalcopyrite layer with high density of indium or gallium at copper antisite defects ((In, Ga){sub Cu}) near the CIGS surface, for CIGS films grown with insufficient selenium supply. This defective layer or the film growth conditions associated with it is further linked with observed current-voltage characteristics, including rollover and crossover behavior, and a defect state at around 110 meV (generally denoted as the N1 defect) commonly observed in admittance spectroscopy. The impact of the (In, Ga){sub Cu} defects on device PV performance is also established. (Copyright copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  12. Spin transport, magnetoresistance, and electrically detected magnetic resonance in amorphous hydrogenated silicon nitride

    Energy Technology Data Exchange (ETDEWEB)

    Mutch, Michael J. [Intercollege Program of Materials, Pennsylvania State University, University Park, Pennsylvania 16802 (United States); Lenahan, Patrick M. [Intercollege Program of Materials, Pennsylvania State University, University Park, Pennsylvania 16802 (United States); Department of Engineering Science and Mechanics, Pennsylvania State University, University Park, Pennsylvania 16802 (United States); King, Sean W. [Logic Technology Development, Intel Corporation, Hillsboro, Oregon 97124 (United States)

    2016-08-08

    We report on a study of spin transport via electrically detected magnetic resonance (EDMR) and near-zero field magnetoresistance (MR) in silicon nitride films. Silicon nitrides have long been important materials in solid state electronics. Although electronic transport in these materials is not well understood, electron paramagnetic resonance studies have identified a single dominating paramagnetic defect and have also provided physical and chemical descriptions of the defects, called K centers. Our EDMR and MR measurements clearly link the near-zero field MR response to the K centers and also indicate that K center energy levels are approximately 3.1 eV above the a-SiN:H valence band edge. In addition, our results suggest an approach for the study of defect mediated spin-transport in inorganic amorphous insulators via variable electric field and variable frequency EDMR and MR which may be widely applicable.

  13. Gauge turbulence, topological defect dynamics, and condensation in Higgs models

    Energy Technology Data Exchange (ETDEWEB)

    Gasenzer, Thomas [Institut für Theoretische Physik, Universität Heidelberg, Philosophenweg 16, 69120 Heidelberg (Germany); ExtreMe Matter Institute EMMI, GSI, Planckstraße 1, D-64291 Darmstadt (Germany); McLerran, Larry [Physics Department, Bldg. 510A, Brookhaven National Laboratory, Upton, NY 11973 (United States); RIKEN BNL Research Center, Bldg. 510A, Brookhaven National Laboratory, Upton, NY 11973 (United States); Physics Department, China Central Normal University, Wuhan (China); Pawlowski, Jan M.; Sexty, Dénes [Institut für Theoretische Physik, Universität Heidelberg, Philosophenweg 16, 69120 Heidelberg (Germany); ExtreMe Matter Institute EMMI, GSI, Planckstraße 1, D-64291 Darmstadt (Germany)

    2014-10-15

    The real-time dynamics of topological defects and turbulent configurations of gauge fields for electric and magnetic confinement are studied numerically within a 2+1D Abelian Higgs model. It is shown that confinement is appearing in such systems equilibrating after a strong initial quench such as the overpopulation of the infrared modes. While the final equilibrium state does not support confinement, metastable vortex defect configurations appearing in the gauge field are found to be closely related to the appearance of physically observable confined electric and magnetic charges. These phenomena are seen to be intimately related to the approach of a non-thermal fixed point of the far-from-equilibrium dynamical evolution, signaled by universal scaling in the gauge-invariant correlation function of the Higgs field. Even when the parameters of the Higgs action do not support condensate formation in the vacuum, during this approach, transient Higgs condensation is observed. We discuss implications of these results for the far-from-equilibrium dynamics of Yang–Mills fields and potential mechanisms of how confinement and condensation in non-Abelian gauge fields can be understood in terms of the dynamics of Higgs models. These suggest that there is an interesting new class of dynamics of strong coherent turbulent gauge fields with condensates.

  14. Gauge turbulence, topological defect dynamics, and condensation in Higgs models

    International Nuclear Information System (INIS)

    Gasenzer, Thomas; McLerran, Larry; Pawlowski, Jan M.; Sexty, Dénes

    2014-01-01

    The real-time dynamics of topological defects and turbulent configurations of gauge fields for electric and magnetic confinement are studied numerically within a 2+1D Abelian Higgs model. It is shown that confinement is appearing in such systems equilibrating after a strong initial quench such as the overpopulation of the infrared modes. While the final equilibrium state does not support confinement, metastable vortex defect configurations appearing in the gauge field are found to be closely related to the appearance of physically observable confined electric and magnetic charges. These phenomena are seen to be intimately related to the approach of a non-thermal fixed point of the far-from-equilibrium dynamical evolution, signaled by universal scaling in the gauge-invariant correlation function of the Higgs field. Even when the parameters of the Higgs action do not support condensate formation in the vacuum, during this approach, transient Higgs condensation is observed. We discuss implications of these results for the far-from-equilibrium dynamics of Yang–Mills fields and potential mechanisms of how confinement and condensation in non-Abelian gauge fields can be understood in terms of the dynamics of Higgs models. These suggest that there is an interesting new class of dynamics of strong coherent turbulent gauge fields with condensates

  15. Dirichlet topological defects

    International Nuclear Information System (INIS)

    Carroll, S.M.; Trodden, M.

    1998-01-01

    We propose a class of field theories featuring solitonic solutions in which topological defects can end when they intersect other defects of equal or higher dimensionality. Such configurations may be termed open-quotes Dirichlet topological defects,close quotes in analogy with the D-branes of string theory. Our discussion focuses on defects in scalar field theories with either gauge or global symmetries, in 3+1 dimensions; the types of defects considered include walls ending on walls, strings on walls, and strings on strings. copyright 1998 The American Physical Society

  16. Electrically Conductive, Corrosion-Resistant Coatings Through Defect Chemistry for Metallic Interconnects

    International Nuclear Information System (INIS)

    Anil V. Virkar

    2006-01-01

    The principal objective of this work was to develop oxidation protective coatings for metallic interconnect based on a defect chemistry approach. It was reasoned that the effectiveness of a coating is dictated by oxygen permeation kinetics; the slower the permeation kinetics, the better the protection. All protective coating materials investigated to date are either perovskites or spinels containing metals exhibiting multiple valence states (Co, Fe, Mn, Cr, etc.). As a result, all of these oxides exhibit a reasonable level of electronic conductivity; typically at least about ∼0.05 S/cm at 800 C. For a 5 micron coating, this equates to a maximum ∼0.025 (Omega)cm 2 area specific resistance due to the coating. This suggests that the coating should be based on oxygen ion conductivity (the lower the better) and not on electronic conductivity. Measurements of ionic conductivity of prospective coating materials were conducted using Hebb-Wagner method. It was demonstrated that special precautions need to be taken to measure oxygen ion conductivity in these materials with very low oxygen vacancy concentration. A model for oxidation under a protective coating is presented. Defect chemistry based approach was developed such that by suitably doping, oxygen vacancy concentration was suppressed, thus suppressing oxygen ion transport and increasing effectiveness of the coating. For the cathode side, the best coating material identified was LaMnO 3 with Ti dopant on the Mn site (LTM). It was observed that LTM is more than 20 times as effective as Mn-containing spinels. On the anode side, LaCrO3 doped with Nb on the Cr site (LNC) was the material identified. Extensive oxidation kinetics studies were conducted on metallic alloy foils with coating ∼1 micron in thickness. From these studies, it was projected that a 5 micron coating would be sufficient to ensure 40,000 h life

  17. Formation and properties of radiation-induced defects and radiolysis products in lithium orthosilicate

    Energy Technology Data Exchange (ETDEWEB)

    Tiliks, J.E.; Kizane, G.K.; Supe, A.A.; Abramenkovs, A.A.; Tiliks, J.J. (Latvian Univ., Riga (Latvia)); Vasiljev, V.G. (Acad. A.A. Bochvar Inst. of Inorganic Materials, Moscow (USSR))

    1991-12-01

    Formation and properties of radiation-induced defects and radiolysis products in polycrystalline powders and ceramic pellets of Li{sub 4}SiO{sub 4} were studied under the effect of various types of ionizing irradiation ({gamma} quants, accelerated electrons, reactor irradiation), humidity, temperature, impurities in the samples, etc. The content of radiation defects and radiolysis products poorly depends on irradiation type, dose rate, admixture elements. The concentration of defects highly depends on the temperature of irradiation, humidity, granural size. Empirical dependence of radiolysis degree {alpha} on the dose was found: {alpha}=5x10{sup -2}xD{sup 0.5} for {gamma} and electron irradiation (T{sub rad}=300-350 K) and {alpha}=5x10{sup -3}xD{sup 0.5} for reactor radiation (T{sub rad}=700-800 K); {alpha} - matrix dissociation degree (in %); D - dose (in MGy). Colloidal lithium and silicon, lithium and silicon oxides, and O{sub 2} are the final products of radiolysis. Radiation-induced defects change tritium thermo-extraction parameters, deteriorate mechanical, thermo-physical and electric properties of ceramics. (orig.).

  18. Reactive evaporation of low-defect density hafnia

    International Nuclear Information System (INIS)

    Chow, R.; Falabella, S.; Loomis, G.E.; Rainer, F.; Stolz, C.J.; Kozlowski, M.R.

    1993-01-01

    Motivation for this work includes observations at Lawrence Livermore National Laboratory of a correlation between laser damage thresholds and both the absorption and the nodular-defect density of coatings. Activated oxygen is used to increase the metal-oxidation kinetics at the coated surface during electron-beam deposition. A series of hafnia layers are made with various conditions: two μ-wave configuations, two sources (hafnium and hafnia), and two reactive oxygen pressures. Laser damage thresholds (1064-nm, 10-ns pulses), absorption (at 511 nm), and nodular-defect densities from these coatings are reported. The damage thresholds are observed to increase as the absorption of the coatings decreases. However, no significant increase in damage thresholds are observed with the coatings made from a low nodular-defect density source material (hafnium). Hafnia coatings can be made from hafnium sources that have lower nodular-defect densities, lower absorption, and damage thresholds that are comparable with coatings made from a conventional hafnia source

  19. Antecedents of employee electricity saving behavior in organizations: An empirical study based on norm activation model

    International Nuclear Information System (INIS)

    Zhang, Yixiang; Wang, Zhaohua; Zhou, Guanghui

    2013-01-01

    China is one of the major energy-consuming countries, and is under great pressure to promote energy saving and reduce domestic energy consumption. Employees constitute an important target group for energy saving. However, only a few research efforts have been paid to study what drives employee energy saving behavior in organizations. To fill this gap, drawing on norm activation model (NAM), we built a research model to study antecedents of employee electricity saving behavior in organizations. The model was empirically tested using survey data collected from office workers in Beijing, China. Results show that personal norm positively influences employee electricity saving behavior. Organizational electricity saving climate negatively moderates the effect of personal norm on electricity saving behavior. Awareness of consequences, ascription of responsibility, and organizational electricity saving climate positively influence personal norm. Furthermore, awareness of consequences positively influences ascription of responsibility. This paper contributes to the energy saving behavior literature by building a theoretical model of employee electricity saving behavior which is understudied in the current literature. Based on the empirical results, implications on how to promote employee electricity saving are discussed. - Highlights: • We studied employee electricity saving behavior based on norm activation model. • The model was tested using survey data collected from office workers in China. • Personal norm positively influences employee′s electricity saving behavior. • Electricity saving climate negatively moderates personal norm′s effect. • This research enhances our understanding of employee electricity saving behavior

  20. Characterization of appendage weld quality by on line monitoring of electrical parameters

    Energy Technology Data Exchange (ETDEWEB)

    Setty, D.S.; Somani, A.K.; Ram, A.M.; Rao, A.R.; Jayaraj, R.N.; Kalidas, R. [Nuclear Fuel Complex, Dept. of Atomic Energy, Hyderabad (India)

    2005-07-01

    Resistance projection welding of zirconium alloy appendages is one of the most critical processes in the PHWR fuel fabrication. Appendages like Spacers and Bearing pads having multi projections are joined to the fuel sheath using capacitor discharge power source. Variations in the projection sizes, weld parameters and cleanliness of the work pieces have significant effect on the weld quality, in addition to material properties like hardness, tensile strength and surface finish. Defects like metal expulsion and weak welds are occasionally observed in appendage welding process, which need to be identified and segregated. Though numerous off-line inspection methods are available for the weld quality evaluation, on-line monitoring of weld quality is essential for identifying defective welds. For this purpose, various monitoring techniques like acoustic emission, analyzing derived electrical parameters and weld upset/deformation measurements are employed. The derived electrical parameters like A{sup 2}-Sec and Ohm-Sec can also be monitored. The present paper highlights development of suitable acceptance criteria for the monitoring technique by employing derived electrical parameters covering a wide range of weld variables like watt-sec and squeeze force. Excellent correlation could be achieved in identifying the weak welds and weld expulsion defects in mass production. (author)

  1. Characterisation of defects in p-GaN by admittance spectroscopy

    International Nuclear Information System (INIS)

    Elsherif, O.S.; Vernon-Parry, K.D.; Evans-Freeman, J.H.; Airey, R.J.; Kappers, M.; Humphreys, C.J.

    2012-01-01

    Mg-doped GaN films have been grown on (0 0 0 1) sapphire using metal organic vapour phase epitaxy. Use of different buffer layer strategies caused the threading dislocation density (TDD) in the GaN to be either approximately 2×10 9 cm -2 or 1×10 10 cm -2 . Frequency-dependent capacitance and conductance measurements at temperatures up to 450 K have been used to study the electronic states associated with the Mg doping, and to determine how these are affected by the TDD. Admittance spectroscopy of the films finds a single impurity-related acceptor level with an activation energy of 160±10 meV for [Mg] of about 1×10 19 cm -3 , and 120±10 eV as the Mg precursor flux decreased. This level is thought to be associated with the Mg acceptor state. The TDD has no discernible effect on the trap detected by admittance spectroscopy. We compare these results with cathodoluminescence measurements reported in the literature, which reveal that most threading dislocations are non-radiative recombination centres, and discuss possible reasons why our admittance spectroscopy have not detected electrically active defects associated with threading dislocations.

  2. Britain's Nuclear Electric pursues a major programme to enhance safety

    International Nuclear Information System (INIS)

    Anon.

    1991-01-01

    The UK state-owned nuclear utility, Nuclear Electric, is actively pursuing a major initiative inherited from its predecessor the Central Electricity Generating Board, known as the Station Enhancement Programme. The Enhancement Programme is a multi-million pound project and covers all Nuclear Electric's stations (including relevant aspects of the de-commissioning site at Berkeley). Its fundamental objective is to enhance the arrangements, practices and attitudes on the power stations to create an overall environment likely to promote ever safer and more reliable operation, and to take full account of the best international practices. The four year programme started in the spring of 1989, and is expected to be completed in 1993. Key elements of the programme include quality assurance based management systems; improvements to site and plant material conditions; a more formal approach to training; additional resources and controls to aid the management of maintenance defects; higher profile for the feedback of operational experience; management targets; a station evaluation programme; and formal feedback of lessons learned from the IAEA operational and safety review team visit to the Oldbury-on-Severn station in 1989. (author)

  3. Polymers in cartilage defect repair of the knee : Current status and future prospects

    NARCIS (Netherlands)

    Jeuken, R.M.; Roth, A.K.; Peters, R.; van Donkelaar, C.C.; Thies, J.; van Rhijn, L.; Emans, P.

    2016-01-01

    Cartilage defects in the knee are often seen in young and active patients. There is a need for effective joint preserving treatments in patients suffering from cartilage defects, as untreated defects often lead to osteoarthritis. Within the last two decades, tissue engineering based techniques using

  4. Defect forces, defect couples and path integrals in fracture mechanics

    International Nuclear Information System (INIS)

    Roche, R.L.

    1979-07-01

    In this work, it is shown that the path integrals can be introduced without any reference to the material behavior. The method is based on the definition in a continuous medium of a set of vectors and couples having the dimension of a force or a moment. More precisely, definitions are given of volume defect forces, surface defect forces, volume defect couples, and surface defect couples. This is done with the help of the stress working variation of a particule moving through the solid. The most important result is: the resultant of all the defect forces included in a volume V is the J integral on the surface surrounding V and the moment resultant is the L integral. So these integrals are defined without any assumption on the material constitutive equation. Another result is the material form of the virtual work principle - defect forces are acting like conventional forces in the conventional principles of virtual work. This lead to the introduction of the energy momentum tensor and of the associated couple stress. Application of this method is made to fracture mechanics in studying the defect forces distribution around a crack [fr

  5. Shock-induced electrical activity in polymeric solids. A mechanically induced bond scission model

    International Nuclear Information System (INIS)

    Graham, R.A.

    1979-01-01

    When polymeric solids are subjected to high-pressure shock loading, two anomalous electrical phenomena, shock-induced conduction and shock-induced polarization, are observed. The present paper proposes a model of mechanically induced bond scission within the shock front to account for the effects. An experimental study of shock-induced polarization in poly(pyromellitimide) (Vespel SP-1) is reported for shock compressions from 17 to 23% (pressures from 2.5 to 5.4 GPa). Poly(pyromellitimide) is found to be a strong generator of such polarization and the polarization is found to reflect an irreversible or highly hysteretic process. The present measurements are combined with prior measurements to establish a correlation between monomer structure and strength of shock-induced polarization; feeble signals are observed in the simpler monomer repeat units of poly(tetrafluoroethylene) and polyethylene while the strongest signals are observed in more complex monomers of poly(methyl methacrylate) and poly(pyromellitimide). It is also noted that there is an apparent correlation between shock-induced conduction and shock-induced polarization. Such shock-induced electrical activity is also found to be well correlated with the propensity for mechanical bond scission observed in experiments carried out in conventional mechanochemical studies. The bond scission model can account for characteristics observed for electrical activity in shock-loaded polymers and their correlation to monomer structure. Localization of elastic energy within the monomer repeat unit or along the main chain leads to the different propensities for bond scission and resulting shock-induced electrical activity

  6. Active sensing associated with spatial learning reveals memory-based attention in an electric fish.

    Science.gov (United States)

    Jun, James J; Longtin, André; Maler, Leonard

    2016-05-01

    Active sensing behaviors reveal what an animal is attending to and how it changes with learning. Gymnotus sp, a gymnotiform weakly electric fish, generates an electric organ discharge (EOD) as discrete pulses to actively sense its surroundings. We monitored freely behaving gymnotid fish in a large dark "maze" and extracted their trajectories and EOD pulse pattern and rate while they learned to find food with electrically detectable landmarks as cues. After training, they more rapidly found food using shorter, more stereotyped trajectories and spent more time near the food location. We observed three forms of active sensing: sustained high EOD rates per unit distance (sampling density), transient large increases in EOD rate (E-scans) and stereotyped scanning movements (B-scans) were initially strong at landmarks and food, but, after learning, intensified only at the food location. During probe (no food) trials, after learning, the fish's search area and intense active sampling was still centered on the missing food location, but now also increased near landmarks. We hypothesize that active sensing is a behavioral manifestation of attention and essential for spatial learning; the fish use spatial memory of landmarks and path integration to reach the expected food location and confine their attention to this region. Copyright © 2016 the American Physiological Society.

  7. Neural Tube Defects

    Science.gov (United States)

    Neural tube defects are birth defects of the brain, spine, or spinal cord. They happen in the ... that she is pregnant. The two most common neural tube defects are spina bifida and anencephaly. In ...

  8. Activation of multiple signaling pathways causes developmental defects in mice with a Noonan syndrome–associated Sos1 mutation

    Science.gov (United States)

    Chen, Peng-Chieh; Wakimoto, Hiroko; Conner, David; Araki, Toshiyuki; Yuan, Tao; Roberts, Amy; Seidman, Christine E.; Bronson, Roderick; Neel, Benjamin G.; Seidman, Jonathan G.; Kucherlapati, Raju

    2010-01-01

    Noonan syndrome (NS) is an autosomal dominant genetic disorder characterized by short stature, unique facial features, and congenital heart disease. About 10%–15% of individuals with NS have mutations in son of sevenless 1 (SOS1), which encodes a RAS and RAC guanine nucleotide exchange factor (GEF). To understand the role of SOS1 in the pathogenesis of NS, we generated mice with the NS-associated Sos1E846K gain-of-function mutation. Both heterozygous and homozygous mutant mice showed many NS-associated phenotypes, including growth delay, distinctive facial dysmorphia, hematologic abnormalities, and cardiac defects. We found that the Ras/MAPK pathway as well as Rac and Stat3 were activated in the mutant hearts. These data provide in vivo molecular and cellular evidence that Sos1 is a GEF for Rac under physiological conditions and suggest that Rac and Stat3 activation might contribute to NS phenotypes. Furthermore, prenatal administration of a MEK inhibitor ameliorated the embryonic lethality, cardiac defects, and NS features of the homozygous mutant mice, demonstrating that this signaling pathway might represent a promising therapeutic target for NS. PMID:21041952

  9. Combining fluidized activated carbon with weak alternating electric fields for disinfection

    NARCIS (Netherlands)

    Racyte, J.; Sharabati, J.; Paulitsch-Fuchs, A.H.; Yntema, D.R.; Mayer, M.J.J.; Bruning, H.; Rijnaarts, H.H.M.

    2011-01-01

    This study presents fluidized bed electrodes as a new device for disinfection. In the fluidized bed electrodes system, granular activated carbon particles were suspended, and an alternating radio frequency electric field was applied over the suspended bed. Proof-of-principle studies with the

  10. Defects activated photoluminescence in two-dimensional semiconductors: interplay between bound, charged, and free excitons

    Science.gov (United States)

    Tongay, Sefaattin; Suh, Joonki; Ataca, Can; Fan, Wen; Luce, Alexander; Kang, Jeong Seuk; Liu, Jonathan; Ko, Changhyun; Raghunathanan, Rajamani; Zhou, Jian; Ogletree, Frank; Li, Jingbo; Grossman, Jeffrey C.; Wu, Junqiao

    2013-01-01

    Point defects in semiconductors can trap free charge carriers and localize excitons. The interaction between these defects and charge carriers becomes stronger at reduced dimensionalities, and is expected to greatly influence physical properties of the hosting material. We investigated effects of anion vacancies in monolayer transition metal dichalcogenides as two-dimensional (2D) semiconductors where the vacancies density is controlled by α-particle irradiation or thermal-annealing. We found a new, sub-bandgap emission peak as well as increase in overall photoluminescence intensity as a result of the vacancy generation. Interestingly, these effects are absent when measured in vacuum. We conclude that in opposite to conventional wisdom, optical quality at room temperature cannot be used as criteria to assess crystal quality of the 2D semiconductors. Our results not only shed light on defect and exciton physics of 2D semiconductors, but also offer a new route toward tailoring optical properties of 2D semiconductors by defect engineering. PMID:24029823

  11. Nanocarbon: Defect Architectures and Properties

    Science.gov (United States)

    Vuong, Amanda

    The allotropes of carbon make its solid phases amongst the most diverse of any element. It can occur naturally as graphite and diamond, which have very different properties that make them suitable for a wide range of technological and commercial purposes. Recent developments in synthetic carbon include Highly Oriented Pyrolytic Graphite (HOPG) and nano-carbons, such as fullerenes, nanotubes and graphene. The main industrial application of bulk graphite is as an electrode material in steel production, but in purified nuclear graphite form, it is also used as a moderator in Advanced Gas-cooled Reactors across the United Kingdom. Both graphene and graphite are damaged over time when subjected to bombardment by electrons, neutrons or ions, and these have a wide range of effects on their physical and electrical properties, depending on the radiation flux and temperature. This research focuses on intrinsic defects in graphene and dimensional change in nuclear graphite. The method used here is computational chemistry, which complements physical experiments. Techniques used comprise of density functional theory (DFT) and molecular dynamics (MD), which are discussed in chapter 2 and chapter 3, respectively. The succeeding chapters describe the results of simulations performed to model defects in graphene and graphite. Chapter 4 presents the results of ab initio DFT calculations performed to investigate vacancy complexes that are formed in AA stacked bilayer graphene. In AB stacking, carbon atoms surrounding the lattice vacancies can form interlayer structures with sp2 bonding that are lower in energy compared to in-plane reconstructions. From the investigation of AA stacking, sp2 interlayer bonding of adjacent multivacancy defects in registry creates a type of stable sp2 bonded wormhole between the layers. Also, a new class of mezzanine structure characterised by sp3 interlayer bonding, resembling a prismatic vacancy loop has also been identified. The mezzanine, which is a

  12. Ionospheric quasi-static electric field anomalies during seismic activity in August–September 1981

    Directory of Open Access Journals (Sweden)

    M. Gousheva

    2009-01-01

    Full Text Available The paper proposes new results, analyses and information for the plate tectonic situation in the processing of INTERCOSMOS-BULGARIA-1300 satellite data about anomalies of the quasi-static electric field in the upper ionosphere over activated earthquake source regions at different latitudes. The earthquake catalogue is made on the basis of information from the United State Geological Survey (USGS website. The disturbances in ionospheric quasi-static electric fields are recorded by IESP-1 instrument aboard the INTERCOSMOS-BULGARIA-1300 satellite and they are compared with significant seismic events from the period 14 August–20 September 1981 in magnetically very quiet, quiet and medium quiet days. The main tectonic characteristics of the seismically activated territories are also taken in account. The main goal of the above research work is to enlarge the research of possible connections between anomalous vertical electric field penetrations into the ionosphere and the earthquake manifestations, also to propose tectonic arguments for the observed phenomena. The studies are represented in four main blocks: (i previous studies of similar problems, (ii selection of satellite, seismic and plate tectonic data, (iii data processing with new specialized software and observations of the quasi-static electric field and (iiii summary, comparison of new with previous results in our studies and conclusion. We establish the high informativity of the vertical component Ez of the quasi-static electric field in the upper ionosphere according observations by INTERCOSMOS-BULGARIA-1300 that are placed above considerably activated earthquake sources. This component shows an increase of about 2–10 mV/m above sources, situated on mobile structures of the plates. The paper discusses the observed effects. It is represented also a statistical study of ionospheric effects 5–15 days before and 5–15 days after the earthquakes with magnitude M 4.8–7.9.

  13. Impact of post deposition annealing in the electrically active traps at the interface between Ge(001) substrates and LaGeO{sub x} films grown by molecular beam deposition

    Energy Technology Data Exchange (ETDEWEB)

    Molle, Alessandro [Laboratorio MDM, CNR-IMM, via C. Olivetti 2, Agrate Brianza (MB) I-20864 (Italy); Baldovino, Silvia; Fanciulli, Marco [Laboratorio MDM, CNR-IMM, via C. Olivetti 2, Agrate Brianza (MB) I-20864 (Italy); Dipartimento di Scienza dei Materiali, Universita degli Studi di Milano Bicocca, Milano (Italy); Tsoutsou, Dimitra; Golias, Evangelos; Dimoulas, Athanasios [MBE Laboratory, Institute of Materials Science, NCSR DEMOKRITOS, Athens 153 10 (Greece)

    2011-10-15

    Changes in the electron trapping at the interface between Ge substrates and LaGeO{sub x} films grown by atomic O assisted molecular beam deposition are inferred upon post deposition annealing treatment on the as-deposited films from electrically detected magnetic resonance (EDMR) spectroscopy and from the electrical response of Pt/LaGeO{sub x}/Ge metal oxide semiconductor (MOS) capacitors. The improved electrical performance of the MOS capacitors upon annealing is consistent with the EDMR detected reduction of oxide defects which are associated with GeO species in the LaGeO{sub x} layer as evidenced by x-ray photoelectron spectroscopy.

  14. The electricity market

    International Nuclear Information System (INIS)

    2015-01-01

    After a first part proposing predictions for electricity production and consumption for 2016, for the turnovers of electricity suppliers and producers, an indication of important recent important events regarding enterprises belonging to the sector, and a dashboard of the sector activity, an annual report proposes a detailed overview of trends and of the competition context for the electricity market. It identifies the main market opportunities for electricity suppliers, identifies eight determining factors for the sector activity, gives an overview of the sector context evolution between 2004 and 2014 (temperatures, rainfalls, manufacturing industry production, housing and office building stock, projected housing and office building). It analyses the evolution of the sector activity by presenting and commenting various activity indicators and financial performance of electricity producers. It analyses the sector economic structure: evolution of the economic fabric, presentation of various structural characteristics (cross-border exchanges, production capacities per energy source, nuclear plant fleet, thermal plant fleet, location, electricity supply market). It proposes a presentation of the various actors and of their respective market shares, and presentations of groups, electricity suppliers, and electricity producers. It indicates highlights and presents various rankings of the main enterprises in 2014

  15. Electrical property studies of neutron-transmutation-doped silicon

    International Nuclear Information System (INIS)

    Cleland, J.W.; Fleming, P.H.; Westbrook, R.D.; Wood, R.F.; Young, R.T.

    1978-01-01

    Results of studies of electrical properties of neutron-transmutation-doped (NTD) silicon are presented. Annealing requirements to remove lattice damage were obtained. The electrical role of clustered oxygen and defect-oxygen complex was investigated. An NTD epitaxial layer on a heavily doped n- or p- type substrate can be produced. There is no evident interaction between lithium introduced by diffusion and phosphorous 31 introduced by irradiation. There may be some type of pairing reaction between lithium 7 introduced by boron 10 fission and any remaining boron

  16. Interacting Frenkel defects at high concentration and the superionic transition in fluorite crystals

    International Nuclear Information System (INIS)

    March, N.H.; Tosi, M.P.

    1980-11-01

    A spherical cell model is proposed to account for the explicit concentration dependence of Frenkel defects in an ionic system. In the model, the linearized Debye-Hueckel equation is soluble exactly, subject to the boundary condition that the electric field is zero at the cell boundary R, related to the concentration α of defects by R proportional to csup(-1/3). This screened field is used to calculate the chemical potential, which in turn leads to a condition for the instability of the interacting defect assembly. This condition allows one to calculate the enhancement of the concentration of defects above its Arrhenius value at the point of instability in terms of (a) the critical concentration csub(c), (b) a/R, where a is the radius of defect and (c) the Debye-Hueckel screening length kappasub(c). It is clear from the cell model that this enhancement factor is reduced somewhat in the relevant range of parameters in some of the fluorites from its value in extended Debye-Hueckel theory. It is anticipated that the instability discussed here should afford an upper bound to csub(c) at the superionic transition, within the range of validity of the model. The excess he at capacity csub(p) is also discussed briefly. (author)

  17. Hydrogen-related defects in Al2O3 layers grown on n-type Si by the atomic layer deposition technique

    Science.gov (United States)

    Kolkovsky, Vl.; Stübner, R.

    2018-04-01

    The electrical properties of alumina films with thicknesses varying from 15 nm to 150 nm, grown by the atomic layer deposition technique on n-type Si, were investigated. We demonstrated that the annealing of the alumina layers in argon (Ar) or hydrogen (H) atmosphere at about 700 K resulted in the introduction of negatively charged defects irrespective of the type of the substrate. These defects were also observed in samples subjected to a dc H plasma treatment at temperatures below 400 K, whereas they were not detected in as-grown samples and in samples annealed in Ar atmosphere at temperatures below 400 K. The concentration of these defects increased with a higher H content in the alumina films. In good agreement with theory we assigned these defects to interstitial H-related defects.

  18. Defective chemokine signal integration in leukocytes lacking activator of G protein signaling 3 (AGS3).

    Science.gov (United States)

    Branham-O'Connor, Melissa; Robichaux, William G; Zhang, Xian-Kui; Cho, Hyeseon; Kehrl, John H; Lanier, Stephen M; Blumer, Joe B

    2014-04-11

    Activator of G-protein signaling 3 (AGS3, gene name G-protein signaling modulator-1, Gpsm1), an accessory protein for G-protein signaling, has functional roles in the kidney and CNS. Here we show that AGS3 is expressed in spleen, thymus, and bone marrow-derived dendritic cells, and is up-regulated upon leukocyte activation. We explored the role of AGS3 in immune cell function by characterizing chemokine receptor signaling in leukocytes from mice lacking AGS3. No obvious differences in lymphocyte subsets were observed. Interestingly, however, AGS3-null B and T lymphocytes and bone marrow-derived dendritic cells exhibited significant chemotactic defects as well as reductions in chemokine-stimulated calcium mobilization and altered ERK and Akt activation. These studies indicate a role for AGS3 in the regulation of G-protein signaling in the immune system, providing unexpected venues for the potential development of therapeutic agents that modulate immune function by targeting these regulatory mechanisms.

  19. Defect Pattern Recognition Based on Partial Discharge Characteristics of Oil-Pressboard Insulation for UHVDC Converter Transformer

    Directory of Open Access Journals (Sweden)

    Wen Si

    2018-03-01

    Full Text Available The ultra high voltage direct current (UHVDC transmission system has advantages in delivering electrical energy over long distance at high capacity. UHVDC converter transformer is a key apparatus and its insulation state greatly affects the safe operation of the transmission system. Partial discharge (PD characteristics of oil-pressboard insulation under combined AC-DC voltage are the foundation for analyzing the insulation state of UHVDC converter transformers. The defect pattern recognition based on PD characteristics is an important part of the state monitoring of converter transformers. In this paper, PD characteristics are investigated with the established experimental platform of three defect models (needle-plate, surface discharge and air gap under 1:1 combined AC-DC voltage. The different PD behaviors of three defect models are discussed and explained through simulation of electric field strength distribution and discharge mechanism. For the recognition of defect types when multiple types of sources coexist, the Random Forests algorithm is used for recognition. In order to reduce the computational layer and the loss of information caused by the extraction of traditional features, the preprocessed single PD pulses and phase information are chosen to be the features for learning and test. Zero-padding method is discussed for normalizing the features. Based on the experimental data, Random Forests and Least Squares Support Vector Machine are compared in the performance of computing time, recognition accuracy and adaptability. It is proved that Random Forests is more suitable for big data analysis.

  20. Rapid transitions between defect configurations in a block copolymer melt.

    Science.gov (United States)

    Tsarkova, Larisa; Knoll, Armin; Magerle, Robert

    2006-07-01

    With in situ scanning force microscopy, we image the ordering of cylindrical microdomains in a thin film of a diblock copolymer melt. Tracking the evolution of individual defects reveals elementary steps of defect motion via interfacial undulations and repetitive transitions between distinct defect configurations on a time scale of tens of seconds. The velocity of these transitions suggests a cooperative movement of clusters of chains. The activation energy for the opening/closing of a connection between two cylinders is estimated.

  1. Study of irradiation defects in bismuth by electric transport measurements

    International Nuclear Information System (INIS)

    Le Goff, M.

    1984-01-01

    Pure monocrystalline bismuth is irradiated near 4K by electrons of different energies. Irradiation effects are measured by galvanomagnetic properties at low temperature. Frenkel pairs created during irradiation have a strong effect on carrier mobilities. The data are quantitatively analyzed assuming a rigid band model. After irradiation with 1 MeV electrons, each Frankel pair created corresponds to a total charge of 0.14 electrons. This result obtained by magnetoresistance and Hall effect is confirmed by Shubnikov-de Haas experiments. There is a linear variation between the excess carrier density (p-n) and the Frenkel pair concentration. The more important step of annealing is observed around 40-50 K. This step is attributed to interstitial migration. Resistivity presents a minimum at low temperature after irradiation with electrons of energy over 1.3 MeV. This is explained by virtual bound levels near the Fermi level. The Kondo effect bound to magnetic defects is discussed [fr

  2. Investigation on photoluminescence, electrical and positron lifetime of Eu"3"+ activated Gd_2O_3 phosphors

    International Nuclear Information System (INIS)

    Selvalakshmi, Thangaraj; Sellaiyan, Selvakumar; Uedono, Akira; Chandra Bose, Arumugam

    2015-01-01

    In the present study, red emitting Gd_2O_3:Eu"3"+ phosphors are prepared by citrate-based sol–gel process and the as-prepared samples are annealed at various annealing temperatures. The photoluminescence properties of Gd_2O_3:Eu"3"+ is explained from the excitation and emission spectra. The excitation spectra include peaks corresponding to charge transfer and 4f–4f transitions of Eu"3"+ and Gd"3"+. The phosphors exhibit a weak energy transfer process from Gd"3"+ to Eu"3"+. Under the excitation of 254 nm, a sharp red emission peak is observed at 611 nm and the emission intensity increases with the annealing temperature. The presence of defects in the phosphor is investigated by positron annihilation lifetime and Doppler broadening spectroscopy. The relation between visible emission and lattice defects of the phosphors is presented. The electrical and dielectric properties of the phosphor are also discussed in detail. Such red emitting phosphors pave the way towards the fabrication of light emitting diodes (LEDs). - Highlights: • Positron annihilation lifetime spectroscopy of Gd_2O_3:Eu"3"+. • Relation between positron lifetime and photoluminescence. • Conductivity and dielectric properties of Gd_2O_3:Eu"3"+.

  3. The promotion of mandibular defect healing by the targeting of S1P receptors and the recruitment of alternatively activated macrophages.

    Science.gov (United States)

    Das, Anusuya; Segar, Claire E; Hughley, Brian B; Bowers, Daniel T; Botchwey, Edward A

    2013-12-01

    Endogenous signals originating at the site of injury are involved in the paracrine recruitment, proliferation, and differentiation of circulating progenitor and diverse inflammatory cell types. Here, we investigate a strategy to exploit endogenous cell recruitment mechanisms to regenerate injured bone by local targeting and activation of sphingosine-1-phosphate (S1P) receptors. A mandibular defect model was selected for evaluating regeneration of bone following trauma or congenital disease. The particular challenges of mandibular reconstruction are inherent in the complex anatomy and function of the bone given that the area is highly vascularized and in close proximity to muscle. Nanofibers composed of poly(DL-lactide-co-glycolide) (PLAGA) and polycaprolactone (PCL) were used to delivery FTY720, a targeted agonist of S1P receptors 1 and 3. In vitro culture of bone progenitor cells on drug-loaded constructs significantly enhanced SDF1α mediated chemotaxis of bone marrow mononuclear cells. In vivo results show that local delivery of FTY720 from composite nanofibers enhanced blood vessel ingrowth and increased recruitment of M2 alternatively activated macrophages, leading to significant osseous tissue ingrowth into critical sized defects after 12 weeks of treatment. These results demonstrate that local activation of S1P receptors is a regenerative cue resulting in recruitment of wound healing or anti-inflammatory macrophages and bone healing. Use of such small molecule therapy can provide an alternative to biological factors for the clinical treatment of critical size craniofacial defects. Copyright © 2013 Elsevier Ltd. All rights reserved.

  4. Prolonged Intracellular Na+ Dynamics Govern Electrical Activity in Accessory Olfactory Bulb Mitral Cells.

    Directory of Open Access Journals (Sweden)

    Asaph Zylbertal

    2015-12-01

    Full Text Available Persistent activity has been reported in many brain areas and is hypothesized to mediate working memory and emotional brain states and to rely upon network or biophysical feedback. Here, we demonstrate a novel mechanism by which persistent neuronal activity can be generated without feedback, relying instead on the slow removal of Na+ from neurons following bursts of activity. We show that mitral cells in the accessory olfactory bulb (AOB, which plays a major role in mammalian social behavior, may respond to a brief sensory stimulation with persistent firing. By combining electrical recordings, Ca2+ and Na+ imaging, and realistic computational modeling, we explored the mechanisms underlying the persistent activity in AOB mitral cells. We found that the exceptionally slow inward current that underlies this activity is governed by prolonged dynamics of intracellular Na+ ([Na+]i, which affects neuronal electrical activity via several pathways. Specifically, elevated dendritic [Na+]i reverses the Na+-Ca2+ exchanger activity, thus modifying the [Ca2+]i set-point. This process, which relies on ubiquitous membrane mechanisms, is likely to play a role in other neuronal types in various brain regions.

  5. Electrochemical behavior of thin anodic oxide films on Zircaloy-4: Role of the mobile defects

    International Nuclear Information System (INIS)

    Salot, R.; Lefebvre-Joud, F.; Baroux, B.

    1996-01-01

    The first stages of the electrochemical oxidation of Zircaloy-4 are investigated using simple electrochemical tests and modeling the passive film modifications occurring as a result of contact with the electrolyte. Variations in electrode potential (open-circuit conditions) or current density (potentiodynamic scans) can be simply explained by a high field (F ∼ 10 6 V/cm) assisted passive film growth. Under open-circuit conditions, this field does not vary with exposure time (in the 2 h to 48 h range). The minimum electric field for the onset of high-field behavior is also evaluated and found smaller than the theoretical value which can be explained by a variation in the concentration of mobile defects throughout the film. Measurements of the electrode potential decay after a potentiodynamic scan confirm this model, allowing interpretation of the film modification as a combination of two separate phenomena: film growth under a high electric field and point defect annihilation

  6. Functional end-arterial circulation of the choroid assessed by using fat embolism and electric circuit simulation.

    Science.gov (United States)

    Lee, Ji Eun; Ahn, Ki Su; Park, Keun Heung; Pak, Kang Yeun; Kim, Hak Jin; Byon, Ik Soo; Park, Sung Who

    2017-05-30

    The discrepancy in the choroidal circulation between anatomy and function has remained unsolved for several decades. Postmortem cast studies revealed extensive anastomotic channels, but angiographic studies indicated end-arterial circulation. We carried out experimental fat embolism in cats and electric circuit simulation. Perfusion defects were observed in two categories. In the scatter perfusion defects suggesting an embolism at the terminal arterioles, fluorescein dye filled the non-perfused lobule slowly from the adjacent perfused lobule. In the segmental perfusion defects suggesting occlusion of the posterior ciliary arteries, the hypofluorescent segment became perfused by spontaneous resolution of the embolism without subsequent smaller infarction. The angiographic findings could be simulated with an electric circuit. Although electric currents flowed to the disconnected lobule, the level was very low compared with that of the connected ones. The choroid appeared to be composed of multiple sectors with no anastomosis to other sectors, but to have its own anastomotic arterioles in each sector. Blood flows through the continuous choriocapillaris bed in an end-arterial nature functionally to follow a pressure gradient due to the drainage through the collector venule.

  7. Defect control in room temperature deposited cadmium sulfide thin films by pulsed laser deposition

    International Nuclear Information System (INIS)

    Hernandez-Como, N.; Martinez-Landeros, V.; Mejia, I.; Aguirre-Tostado, F.S.; Nascimento, C.D.; Azevedo, G. de M; Krug, C.; Quevedo-Lopez, M.A.

    2014-01-01

    The control of defects in cadmium sulfide thin films and its impact on the resulting CdS optical and electrical characteristics are studied. Sulfur vacancies and cadmium interstitial concentrations in the CdS films are controlled using the ambient pressure during pulsed laser deposition. CdS film resistivities ranging from 10 −1 to 10 4 Ω-cm are achieved. Hall Effect measurements show that the carrier concentration ranges from 10 19 to 10 13 cm −3 and is responsible for the observed resistivity variation. Hall mobility varies from 2 to 12 cm 2 /V-s for the same pressure regime. Although the energy bandgap remains unaffected (∼ 2.42 eV), the optical transmittance is reduced due to the increase of defects in the CdS films. Rutherford back scattering spectroscopy shows the dependence of the CdS films stoichiometry with deposition pressure. The presence of CdS defects is attributed to more energetic species reaching the substrate, inducing surface damage in the CdS films during pulsed laser deposition. - Highlights: • CdS thin films deposited by pulsed laser deposition at room temperature. • The optical, electrical and structural properties were evaluated. • Carrier concentration ranged from 10 19 to 10 13 cm −3 . • The chemical composition was studied by Rutherford back scattering. • The density of sulfur vacancies and cadmium interstitial was varied

  8. The effect of defects on the catalytic activity of single Au atom supported carbon nanotubes and reaction mechanism for CO oxidation.

    Science.gov (United States)

    Ali, Sajjad; Fu Liu, Tian; Lian, Zan; Li, Bo; Sheng Su, Dang

    2017-08-23

    The mechanism of CO oxidation by O 2 on a single Au atom supported on pristine, mono atom vacancy (m), di atom vacancy (di) and the Stone Wales defect (SW) on single walled carbon nanotube (SWCNT) surface is systematically investigated theoretically using density functional theory. We determine that single Au atoms can be trapped effectively by the defects on SWCNTs. The defects on SWCNTs can enhance both the binding strength and catalytic activity of the supported single Au atom. Fundamental aspects such as adsorption energy and charge transfer are elucidated to analyze the adsorption properties of CO and O 2 and co-adsorption of CO and O 2 molecules. It is found that CO binds stronger than O 2 on Au supported SWCNT. We clearly demonstrate that the defected SWCNT surface promotes electron transfer from the supported single Au atom to O 2 molecules. On the other hand, this effect is weaker for pristine SWCNTs. It is observed that the high density of spin-polarized states are localized in the region of the Fermi level due to the strong interactions between Au (5d orbital) and the adjacent carbon (2p orbital) atoms, which influence the catalytic performance. In addition, we elucidate both the Langmuir-Hinshelwood (LH) and Eley-Rideal (ER) mechanisms of CO oxidation by O 2 . For the LH pathway, the barriers of the rate-limiting step are calculated to be 0.02 eV and 0.05 eV for Au/m-SWCNT and Au/di-SWCNT, respectively. To regenerate the active sites, an ER-like reaction occurs to form a second CO 2 molecule. The ER pathway is observed on Au/m-SWCNT, Au/SW-SWCNT and Au/SWCNT in which the Au/m-SWCNT has a smaller barrier. The comparison with a previous study (Lu et al., J. Phys. Chem. C, 2009, 113, 20156-20160.) indicates that the curvature effect of SWCNTs is important for the catalytic property of the supported single Au. Overall, Au/m-SWCNT is identified as the most active catalyst for CO oxidation compared to pristine SWCNT, SW-SWCNT and di-SWCNT. Our findings give a

  9. Magnetism and Electricity Activity "Attracts" Student Interest

    Science.gov (United States)

    Roman, Harry T.

    2010-01-01

    Electricity and magnetism are intimately linked, this relationship forming the basis of the modern electric utility system and the generation of bulk electrical energy. There is rich literature from which to teach students the basics, but nothing drives the point home like having them learn from firsthand experience--and that is what this…

  10. Electrical activation and spin coherence of ultra low doseantimony implants in silicon

    Energy Technology Data Exchange (ETDEWEB)

    Schenkel, T.; Tyryshkin, A.M.; de Sousa, R.; Whaley, K.B.; Bokor,J.; Liddle, J.A.; Persaud, A.; Shangkuan, J.; Chakarov, I.; Lyon, S.A.

    2005-07-13

    We implanted ultra low doses (0.2 to 2 x 10{sup 11} cm{sup -2}) of Sb ions into isotopically enriched {sup 28}Si, and probed electrical activation and electron spin relaxation after rapid thermal annealing. Strong segregation of dopants towards both Si{sub 3}N{sub 4} and SiO{sub 2} interfaces limits electrical activation. Pulsed Electron Spin Resonance shows that spin echo decay is sensitive to the dopant profiles, and the interface quality. A spin decoherence time, T{sub 2}, of 1.5 ms is found for profiles peaking 25 nm below a Si/SiO{sub 2} interface, increasing to 2.1 ms when the surface is passivated with hydrogen. These measurements provide benchmark data for the development of devices in which quantum information is encoded in donor electron spins.

  11. Laparoscopic-assisted surgical reconstruction of a rare congenital abdominal wall defect in two children misdiagnosed with prune-belly syndrome.

    Science.gov (United States)

    Fishman, Andrew I; Franco, Israel

    2013-08-01

    Abdominal wall laxity is typically associated with prune-belly syndrome (PBS). Incomplete forms of PBS have been rarely reported with only the abdominal wall laxity. Herein, we describe a rare congenital abdominal wall defect that has been confused with PBS and illustrate the laparoscopic-assisted surgical technique used for reconstruction. Two boys with symmetrical, bilateral absence or hypoplasia of the internal and external oblique muscles and no genitourinary abnormalities underwent a laparoscopic-assisted abdominal wall reconstruction utilizing the technique previously described by Firlit. Each patient had a Ct scan which confirmed the absence of the oblique muscles. In one patient EMG data confirmed no electrical activity of the obliques. Radiologic evaluation of the urinary tracts revealed no abnormalities. The abdominal wall was plicated utilizing bilateral subcostal incisions. Both patients had excellent cosmetic and functional results with no weakness or bulging of the lateral abdominal wall and improvement of associated symptoms. We believe these two cases and their congenital abdominal wall defects are a rare and often misdiagnosed muscular deficiency separate from PBS. The novel laparoscopic-assisted surgical technique illustrated is feasible and highly successful for these and possible other patients with similar rare congenital abdominal wall defects. Copyright © 2012 Journal of Pediatric Urology Company. Published by Elsevier Ltd. All rights reserved.

  12. An improved ivermectin-activated chloride channel receptor for inhibiting electrical activity in defined neuronal populations

    DEFF Research Database (Denmark)

    Lynagh, Timothy Peter; Lynch, Joseph W

    2010-01-01

    The ability to silence the electrical activity of defined neuronal populations in vivo is dramatically advancing our understanding of brain function. This technology may eventually be useful clinically for treating a variety of neuropathological disorders caused by excessive neuronal activity...... conductance, homomeric expression, and human origin may render the F207A/A288G alpha1 glycine receptor an improved silencing receptor for neuroscientific and clinical purposes. As all known highly ivermectin-sensitive GluClRs contain an endogenous glycine residue at the corresponding location, this residue...

  13. The Usefulness of Bone Scan in Electric Burns

    International Nuclear Information System (INIS)

    Kim, Tae Hyung; So, Yong Seon; Kweon, Ki Hyeon; Han, Sang Woong; Kim, Seok Hwan; Kim, Jong Soon; Han, Seung Soo

    1996-01-01

    Bone scan is known to be an effective tool for observing the state of soft tissues and bones of electric burn patients. It is also used for observing the progress of patients after debridement or skin graft as well as determining to amputate specific body parts. To evaluate bone scan's role in electric burn, we analyzed bone scan 37 patients with electric burn. Among the 37 patients, 8 of 37 were injured in low voltage and 29 of them in high voltage. 27 patients received the electrical input through the hand, 6 through the scalp, 2 through the shoulder, 1 through the left chest wall and 1 through the left inguinal area. Among 29 patients received high voltage, 22 patients had the electrical output through the foot, 3 through the hand, 2 through the shoulder, 1 through the buttock and 1 through the left chest wall. Bone scans revealed cellulitis in 37 patients with 47 sites, osteomyelitis in 15 patients with 15 sites and bone defects in 4 patients with 4 sites. In 4 patients with skin graft or skin flap, follow up bone scan showed improvements of bony uptake in preoperatively bony defect area and all of them were healed without complication There were 2 cases in which uptake increased in the myocardium, 1 in the liver and 6 in the kidney, however, scrum calcium level, EKG, cardiac enzyme, liver and renal function tests were normal. In conclusion, bone scans are helpful in the assessment of injury sites after electrical insult and in differential diagnosis of cellulitis and osteomyelitis. It is also useful tool of assessment after skin graft or skin flap, however, it should be further evaluated about internal organ damage.

  14. The Usefulness of Bone Scan in Electric Burns

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Tae Hyung; So, Yong Seon; Kweon, Ki Hyeon; Han, Sang Woong; Kim, Seok Hwan; Kim, Jong Soon; Han, Seung Soo [Hanil Hospital, Seoul (Korea, Republic of)

    1996-03-15

    Bone scan is known to be an effective tool for observing the state of soft tissues and bones of electric burn patients. It is also used for observing the progress of patients after debridement or skin graft as well as determining to amputate specific body parts. To evaluate bone scan's role in electric burn, we analyzed bone scan 37 patients with electric burn. Among the 37 patients, 8 of 37 were injured in low voltage and 29 of them in high voltage. 27 patients received the electrical input through the hand, 6 through the scalp, 2 through the shoulder, 1 through the left chest wall and 1 through the left inguinal area. Among 29 patients received high voltage, 22 patients had the electrical output through the foot, 3 through the hand, 2 through the shoulder, 1 through the buttock and 1 through the left chest wall. Bone scans revealed cellulitis in 37 patients with 47 sites, osteomyelitis in 15 patients with 15 sites and bone defects in 4 patients with 4 sites. In 4 patients with skin graft or skin flap, follow up bone scan showed improvements of bony uptake in preoperatively bony defect area and all of them were healed without complication There were 2 cases in which uptake increased in the myocardium, 1 in the liver and 6 in the kidney, however, scrum calcium level, EKG, cardiac enzyme, liver and renal function tests were normal. In conclusion, bone scans are helpful in the assessment of injury sites after electrical insult and in differential diagnosis of cellulitis and osteomyelitis. It is also useful tool of assessment after skin graft or skin flap, however, it should be further evaluated about internal organ damage.

  15. On holographic defect entropy

    International Nuclear Information System (INIS)

    Estes, John; Jensen, Kristan; O’Bannon, Andy; Tsatis, Efstratios; Wrase, Timm

    2014-01-01

    We study a number of (3+1)- and (2+1)-dimensional defect and boundary conformal field theories holographically dual to supergravity theories. In all cases the defects or boundaries are planar, and the defects are codimension-one. Using holography, we compute the entanglement entropy of a (hemi-)spherical region centered on the defect (boundary). We define defect and boundary entropies from the entanglement entropy by an appropriate background subtraction. For some (3+1)-dimensional theories we find evidence that the defect/boundary entropy changes monotonically under certain renormalization group flows triggered by operators localized at the defect or boundary. This provides evidence that the g-theorem of (1+1)-dimensional field theories generalizes to higher dimensions

  16. Passivation of electrically active centers by Hydrogen and Lithium in Semiconductors

    CERN Multimedia

    2002-01-01

    The hyperfine technique of Perturbed Angular Correlation Spectroscopy (PAC) has proven to be excellently suited for the microscopic investigation of impurity complexes in semiconductors. But this method is seriously limited by the small number of chemically different isotopes which are suitable for PAC measurements and represent electrically active centers in semiconductors. This bottleneck can be widely overcome by the ISOLDE facility which provides a great variety of shortliving PAC isotopes. The probe atom $^{111m}$Cd, provided by ISOLDE opened the first successful access to PAC investigations of III-V compounds and enabled also the first PAC experiments on double acceptors in silicon and germamum. \\\\ \\\\ At the new ISOLDE facility our experiments were concentrated on the passivation of electrically active centres by hydrogen and lithium in Si, Ge and III-V compounds. Experiments on $^{111m}$Cd in Ge revealed the formation of two different acceptor hydrogen and two different acceptor lithium complexes respe...

  17. Irradiation-induced defects in ZnO studied by positron annihilation spectroscopy

    International Nuclear Information System (INIS)

    Tuomisto, F.; Saarinen, K.; Look, D.C.

    2004-01-01

    We have used positron annihilation spectroscopy to study the point defects induced by 2 MeV electron irradiation (fluence 6 x 10 17 cm -2 ) in single crystal n-type ZnO samples. The positron lifetime measurements have shown that the zinc vacancies in their doubly negative charge state, which act as dominant compensating centers in the as-grown material, are produced in the irradiation and their contribution to the electrical compensation is important. The lifetime measurements reveal also the presence of competing positron traps with low binding energy and lifetime close to that of the bulk lattice. The analysis of the Doppler broadening of the 511 keV annihilation line indicates that these defects can be identified as neutral oxygen vacancies. (copyright 2004 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  18. Simulation of pure and defective wurtzite-type ZnO

    Energy Technology Data Exchange (ETDEWEB)

    Maldonado, Frank; Stashans, Arvids [Grupo de FisicoquImica de Materiales, Instituto de Quimica Aplicada, Universidad Tecnica Particular de Loja, Apartado 11-01-608, Loja (Ecuador)], E-mail: arvids@utpl.edu.ec

    2009-12-15

    Changes in the structural and electronic properties of zinc oxide (ZnO) due to the O vacancy and F-centre were studied using a semi-empirical quantum-chemical approach based on Hartree-Fock theory. A periodic supercell of 128 atoms was exploited throughout the study. The semi-empirical parameters for the Zn atom are obtained by reproducing the main properties of the ZnO crystal as well as the first three ionization potentials of the Zn atom. The perturbation imposed by the defect leads to atomic relaxation, which is computed and discussed in detail. It is found that electron density redistribution in the vicinity of defects plays an important role in the determination of atomic movements. The introduction of an oxygen vacancy generates a local one-electron energy level placed below the conduction band while the presence of an F-centre produces a local energy level just above the upper valence band of the material. The deep situation of the local energy level corresponding to the F-centre implies that the F-centre cannot serve as a source of unintentional n-type electrical conductivity in ZnO. Changes in the chemical bonding are observed, showing that it becomes slightly more covalent because of oxygen-vacancy-type defects.

  19. Simulation of pure and defective wurtzite-type ZnO

    International Nuclear Information System (INIS)

    Maldonado, Frank; Stashans, Arvids

    2009-01-01

    Changes in the structural and electronic properties of zinc oxide (ZnO) due to the O vacancy and F-centre were studied using a semi-empirical quantum-chemical approach based on Hartree-Fock theory. A periodic supercell of 128 atoms was exploited throughout the study. The semi-empirical parameters for the Zn atom are obtained by reproducing the main properties of the ZnO crystal as well as the first three ionization potentials of the Zn atom. The perturbation imposed by the defect leads to atomic relaxation, which is computed and discussed in detail. It is found that electron density redistribution in the vicinity of defects plays an important role in the determination of atomic movements. The introduction of an oxygen vacancy generates a local one-electron energy level placed below the conduction band while the presence of an F-centre produces a local energy level just above the upper valence band of the material. The deep situation of the local energy level corresponding to the F-centre implies that the F-centre cannot serve as a source of unintentional n-type electrical conductivity in ZnO. Changes in the chemical bonding are observed, showing that it becomes slightly more covalent because of oxygen-vacancy-type defects.

  20. Immune defects in families and patients with xeroderma pigmentosum and trichothiodystrophy.

    Science.gov (United States)

    Mariani, E; Facchini, A; Honorati, M C; Lalli, E; Berardesca, E; Ghetti, P; Marinoni, S; Nuzzo, F; Astaldi Ricotti, G C; Stefanini, M

    1992-01-01

    Xeroderma pigmentosum (XP) is a rare autosomal recessive disease characterized by photosensitivity, a high incidence of cancer in sun-exposed portions of the skin and a reduced capacity to repair the u.v.-induced DNA damage. One of the XP mutations (XP-D) has also been identified in patients affected by trichothiodystrophy (TTD), a rare autosomal recessive disease characterized by brittle hair, mental and physical retardation, peculiar face and ichthyosis. However, in these patients there is no evidence of increased skin tumour incidence. Since an impairment of cell-mediated immunity has been proposed as a co-factor in the cancer proneness of XP patients, we investigated the involvement of immune defect(s) in five XP patients, five TTD patients, their parents, and 24 TTD relatives. We evaluated the phenotype of circulating lymphocytes, natural killer (NK) cell lytic activity, target cell binding of NK cells at single cell level and the effect of interferons (IFN) alpha and beta on NK cell activity. The relative proportion of CD3+ and CD4+ circulating lymphocytes was reduced in XP but not in TTD patients. NK cell lytic activity was decreased in XP patients and their mothers, but their fathers showed normal lytic activity. NK activity varied among TTD families: four out of five patients and their relatives presented low NK cell activity, and one family was normal. In TTD family members, NK activity increased after incubation with IFN-alpha or IFN-beta, but never reached normal values. In contrast, in XP patients and their mothers, the defect was almost completely corrected after in vitro incubation with IFN-alpha or IFN-beta. Our study indicates impaired NK lytic activity in the majority of TTD and XP patients and that this defect is present also in members of their families. In addition, XP patients present a low number of circulating T cells. These multiple abnormalities, together with DNA repair defects, could be related to the increased cancer risk in XP patients

  1. Pulseless electrical activity during electroconvulsive therapy: a case report

    Directory of Open Access Journals (Sweden)

    Kalava Arun

    2012-05-01

    Full Text Available Abstract Background Arrhythmias resulting in cardiac arrest during electroconvulsive therapy have been reported. Most reported cases of cardiac arrest had asystole as the initial rhythm. Pulseless electrical activity as an initial rhythm of cardiac arrest during electroconvulsive therapy has never been reported. Also, thromboembolism after inflation of pneumatic tourniquet during lower limb surgery has been reported but never following tourniquet inflation during an electroconvulsive therapy. Case presentation We report a case involving an 81- year- old female who presented to us for an electroconvulsive therapy for severe depression and developed pulseless electrical activity immediately after electroconvulsive therapy. She was successfully resuscitated and was later found to have bilateral pulmonary emboli with a complete occlusion of the right lower lobe pulmonary artery. The source of embolus was from her left lower extremity deep venous thrombus, which we believe, got dislodged intraoperatively after inflation of pneumatic tourniquet. Our patient not only survived the massive pulmonary embolus, but also showed significant improvement in her mental status compared to her pre-admission level at the time of discharge to a sub-acute rehabilitation centre. Conclusion We recommend that patients who are elderly and at high risk of thromboembolism should selectively undergo a preoperative doppler ultrasound for deep venous thrombosis. Also, selective application of tourniquet in the upper limb, to monitor for seizure activity, would reduce the incidence of pulmonary thrombo-embolism as embolic events are significantly less from deep venous thromboses of upper extremities when compared to lower extremities.

  2. Design Considerations for the Electrical Power Supply of Future Civil Aircraft with Active High-Lift Systems

    Directory of Open Access Journals (Sweden)

    J.-K. Mueller

    2018-01-01

    Full Text Available Active high-lift systems of future civil aircraft allow noise reduction and the use of shorter runways. Powering high-lift systems electrically have a strong impact on the design requirements for the electrical power supply of the aircraft. The active high-lift system of the reference aircraft design considered in this paper consists of a flexible leading-edge device together with a combination of boundary-layer suction and Coanda-jet blowing. Electrically driven compressors distributed along the aircraft wings provide the required mass flow of pressurized air. Their additional loads significantly increase the electric power demand during take-off and landing, which is commonly provided by electric generators attached to the aircraft engines. The focus of the present study is a feasibility assessment of alternative electric power supply concepts to unburden or eliminate the generator coupled to the aircraft engine. For this purpose, two different concepts using either fuel cells or batteries are outlined and evaluated in terms of weight, efficiency, and technology availability. The most promising, but least developed alternative to the engine-powered electric generator is the usage of fuel cells. The advantages are high power density and short refueling time, compared to the battery storage concept.

  3. Study of plasma charging-induced white pixel defect increase in CMOS active pixel sensor

    International Nuclear Information System (INIS)

    Tokashiki, Ken; Bai, KeunHee; Baek, KyeHyun; Kim, Yongjin; Min, Gyungjin; Kang, Changjin; Cho, Hanku; Moon, Jootae

    2007-01-01

    Plasma process-induced 'white pixel defect' (WPD) of CMOS active pixel sensor (APS) is studied for Si3N4 spacer etch back process by using a magnetically enhanced reactive ion etching (MERIE) system. WPD preferably takes place at the wafer edge region when the magnetized plasma is applied to Si3N4 etch. Plasma charging analysis reveals that the plasma charge-up characteristic is well matching the edge-intensive WPD generation, rather than the UV radiation. Plasma charging on APS transfer gate might lead to a gate leakage, which could play a role in generation of signal noise or WPD. In this article the WPD generation mechanism will be discussed from plasma charging point of view

  4. Effect of B+ Flux on the electrical activation of ultra-shallow B+ implants in Ge

    DEFF Research Database (Denmark)

    Yates, B.R.; Darby, B.L.; Petersen, Dirch Hjorth

    2012-01-01

    + implants at 2 keV to a dose of 5.0×1014 cm-2 at beam currents ranging from 0.4 to 6.4 mA has been studied using micro Hall effect measurements after annealing at 400°C for 60 s. It has been shown that the sheet number increases with beam current across the investigated range with electrical activation......The residual implanted dose of ultra-shallow B+ implants in Ge was characterized using elastic recoil detection and was determined to correlate well with simulations with a dose loss of 23% due to ion backscattering for 2 keV implants in Ge. The electrical characterization of ultra-shallow B...... being 76% higher at 6.4 mA as compared to 0.4mA. However, at 6.4 mA, the electrically active fraction remained low at 11.4%. Structural characterization revealed that the implanted region remained crystalline and amorphization is not able to explain the increased activation. The results suggest...

  5. Electric field effects in scanning tunneling microscope imaging

    DEFF Research Database (Denmark)

    Stokbro, Kurt; Quaade, Ulrich; Grey, Francois

    1998-01-01

    We present a high-voltage extension of the Tersoff-Hamann theory of scanning tunneling microscope (STM) images, which includes the effect of the electric field between the tip and the sample. The theoretical model is based on first-principles electronic structure calculations and has no adjustable...... parameters. We use the method to calculate theoretical STM images of the monohydrate Si(100)-H(2x1) surface with missing hydrogen defects at -2V and find an enhanced corrugation due to the electric field, in good agreement with experimental images....

  6. Preventing customer defection and stimulating return of the lost customers

    Directory of Open Access Journals (Sweden)

    Senić Radoslav

    2013-01-01

    Full Text Available Customers represent company's most valuable asset. Company can assure its survival, further growth and development by retaining existing, attracting new and returning lost customers. Retaining existing, loyal customers is the most profitable business activity, attracting new ones is the most expensive, while returning lost and frequently forgotten customers is a type of business activity that still generates modest interest among researchers and practitioners. So far, marketing strategies have been mainly directed towards the first two categories of customers. The objective of this paper is dedicated to customer defection and returning lost customers. Paper discusses customer relationship life-cycle and the significance of managing customer return within it, types of customer defections, the process of managing return, as well as, the reasons that led to customer defection.

  7. Stability of defects in monolayer MoS_2 and their interaction with O_2 molecule: A first-principles study

    International Nuclear Information System (INIS)

    Zhao, B.; Shang, C.; Qi, N.; Chen, Z.Y.; Chen, Z.Q.

    2017-01-01

    Highlights: • Defects can exist steadily in monolayer MoS_2 and break surface chemical inertness. • Activated surfaces are beneficial to the adsorption of O_2 through the introduction of defect levels. • Adsorbed O_2 on defective surface can dissociate with low activation energy barrier. • Defective system may be a potential substrate to design MoS_2-based gas sensor or catalysts. - Abstract: The stability of various defects in monolayer MoS_2, as well as their interactions with free O_2 molecules were investigated by density functional theory (DFT) calculations coupled with the nudged elastic band (NEB) method. The defects including S vacancy (monosulfur and disulfue vacancies), antisite defect (Mo_S) and external Mo atom can exist steadily in monolayer MoS_2, and introduce defect levels in these defective systems, which breaks the surface chemical inertness and significantly enhances the adsorption capacity for free O_2. The adsorption energy calculations and electronic properties analysis suggest that there is a strong interaction between O_2 molecule and defective system. The adsorbed O_2 on the defective surface can dissociate with a lower activation energy barrier, which produce two active oxygen atoms. Especially, two Mo atoms can occupy one Mo lattice site, and adsorbed O_2 on the top of the Mo atom can then dissociate directly with the lowest activation energy barrier. Hence, our work may provide useful information to design MoS_2-based gas sensor or catalysts.

  8. Electrical stimulation as a biomimicry tool for regulating muscle cell behavior.

    Science.gov (United States)

    Ahadian, Samad; Ostrovidov, Serge; Hosseini, Vahid; Kaji, Hirokazu; Ramalingam, Murugan; Bae, Hojae; Khademhosseini, Ali

    2013-01-01

    There is a growing need to understand muscle cell behaviors and to engineer muscle tissues to replace defective tissues in the body. Despite a long history of the clinical use of electric fields for muscle tissues in vivo, electrical stimulation (ES) has recently gained significant attention as a powerful tool for regulating muscle cell behaviors in vitro. ES aims to mimic the electrical environment of electroactive muscle cells (e.g., cardiac or skeletal muscle cells) by helping to regulate cell-cell and cell-extracellular matrix (ECM) interactions. As a result, it can be used to enhance the alignment and differentiation of skeletal or cardiac muscle cells and to aid in engineering of functional muscle tissues. Additionally, ES can be used to control and monitor force generation and electrophysiological activity of muscle tissues for bio-actuation and drug-screening applications in a simple, high-throughput, and reproducible manner. In this review paper, we briefly describe the importance of ES in regulating muscle cell behaviors in vitro, as well as the major challenges and prospective potential associated with ES in the context of muscle tissue engineering.

  9. Influence of accompanying substances of hemp fibres on their electric resistance

    Directory of Open Access Journals (Sweden)

    Pejić Biljana

    2006-01-01

    Full Text Available Hemp fibres belong to the group of natural, cellulose bast fibres. These fibres have exceptional properties such as: antimicrobial effect, absence of allergy effect, extraordinary sorption properties, good electro-physical properties (small static electricity in regard to other cellulose fibres as well as high values of breaking strength (the natural fibre with the highest strength. However, hemp fibres have some defects: heterogeneous chemical composition, large quantity of accompanying substances (lignin pectins, waxes and unsatisfactory fineness and eveness. It is possible to a great extent to eliminate or reduce, the defects of hemp fibres by of appropriate modification treatments. In order to determine the appropriate modification treatment of hemp fibres, the dependences between the chemical composition, fineness and electric resistance of hemp fibres were presented in this paper. In the experimental part of the paper, by the application of a procedure for the determination of the chemical composition, the accompanying supstances of hemp fibres were gradually removed. After each phase some fibrous substrates were separated. After that the fineness and electric resistance were determined. This experiment was conducted in order to define the influence of each component of hemp fibres on the fineness and electric resistance. In this paper, hemp fibres were modified by an aqueous solution of sodium hydroxide, under different conditions of modification. The influence of modification conditions on the fineness and electric resistance were studied.

  10. Profuse activity of blue electrical discharges at the tops of thunderstorms

    DEFF Research Database (Denmark)

    Chanrion, Olivier; Neubert, Torsten; Mogensen, Andreas

    2017-01-01

    . The emissions are related to the so-called blue jets, blue starters and possibly pixies. The observations are the first of their kind and give a new perspective on the electrical activity at the top of tropical thunderstorms; further, they underscore that thunderstorm discharges directly perturb the chemistry...

  11. Simulation and energy analysis of distributed electric heating system

    Science.gov (United States)

    Yu, Bo; Han, Shenchao; Yang, Yanchun; Liu, Mingyuan

    2018-02-01

    Distributed electric heating system assistssolar heating systemby using air-source heat pump. Air-source heat pump as auxiliary heat sourcecan make up the defects of the conventional solar thermal system can provide a 24 - hour high - efficiency work. It has certain practical value and practical significance to reduce emissions and promote building energy efficiency. Using Polysun software the system is simulated and compared with ordinary electric boiler heating system. The simulation results show that upon energy request, 5844.5kW energy is saved and 3135kg carbon - dioxide emissions are reduced and5844.5 kWhfuel and energy consumption is decreased with distributed electric heating system. Theeffect of conserving energy and reducing emissions using distributed electric heating systemis very obvious.

  12. Localized topological states in Bragg multihelicoidal fibers with twist defects

    Science.gov (United States)

    Alexeyev, C. N.; Lapin, B. P.; Milione, G.; Yavorsky, M. A.

    2016-06-01

    We have studied the influence of a twist defect in multihelicoidal Bragg fibers on the emerging of localized defect modes. We have shown that if such a fiber is excited with a Gaussian beam this leads to the appearance of a defect-localized topological state, whose topological charge coincides with the order of rotational symmetry of the fiber's refractive index. We have shown that this effect has a pronounced crossover behavior. We have also formulated a principle of creating the systems that can nestle defect-localized topologically charged modes. According to this principle, such systems have to possess topological activity, that is, the ability to change the topological charge of the incoming field, and operate in the Bragg regime.

  13. Mechanisms of electrical isolation in O+ -irradiated ZnO

    Science.gov (United States)

    Zubiaga, A.; Tuomisto, F.; Coleman, V. A.; Tan, H. H.; Jagadish, C.; Koike, K.; Sasa, S.; Inoue, M.; Yano, M.

    2008-07-01

    We have applied positron annihilation spectroscopy combined with sheet resistance measurements to study the electrical isolation of thin ZnO layers irradiated with 2 MeV O+ ions at various fluences. Our results indicate that Zn vacancies, the dominant defects detected by positrons, are produced in the irradiation at a relatively low rate of about 2000cm-1 when the ion fluence is at most 1015cm-2 and that vacancy clusters are created at higher fluences. The Zn vacancies introduced in the irradiation act as dominant compensating centers and cause the electrical isolation, while the results suggest that the vacancy clusters are electrically inactive.

  14. Carbon nanotube conditioning: ab initio simulations of the effect of defects and doping on the electronic properties of carbon nanotube systems.

    Science.gov (United States)

    Soto, Matias; Barrera, Enrique

    Using carbon nanotubes for electrical conduction applications at the macroscale has proven to be a difficult task, mainly, due to defects and impurities present, and lack of uniform electronic properties in synthesized carbon nanotube bundles. Some researchers have suggested that growing only metallic armchair nanotubes and arranging them with an ideal contact length could lead to the ultimate electrical conductivity; however, such recipe presents too high of a cost to pay. A different route and the topic of this work is to learn to manage the defects, impurities, and the electronic properties of carbon nanotubes present, so that the electrical conduction of a bundle or even wire may be enhanced. We used density functional theory calculations to study the effect of defects and doping on the electronic structure of metallic, semi-metal and semiconducting carbon nanotubes in order to gain a clear picture of their properties. Additionally, using dopants to increase the conductance across a junction between two carbon nanotubes was studied for different configurations. Finally, interaction potentials obtained via first-principles calculations were generalized by developing mathematical models for the purpose of running simulations at a larger length scale using molecular dynamics. Partial funding was received from CONACyT Scholarship 314419.

  15. Insulin-induced activation of glycerol-3-phosphate acyltransferase by a chiro-inositol-containing insulin mediator is defective in adipocytes of insulin-resistant, type II diabetic, Goto-Kakizaki rats.

    Science.gov (United States)

    Farese, R V; Standaert, M L; Yamada, K; Huang, L C; Zhang, C; Cooper, D R; Wang, Z; Yang, Y; Suzuki, S; Toyota, T

    1994-11-08

    Type II diabetic Goto-Kakizaki (GK) rats were insulin-resistant in euglycemic-hyperinsulinemic clamp studies. We therefore examined insulin signaling systems in control Wistar and diabetic GK rats. Glycerol-3-phosphate acyltransferase (G3PAT), which is activated by headgroup mediators released from glycosyl-phosphatidylinositol (GPI), was activated by insulin in intact and cell-free adipocyte preparations of control, but not diabetic, rats. A specific chiro-inositol-containing inositol phosphoglycan (IPG) mediator, prepared from beef liver, bypassed this defect and comparably activated G3PAT in cell-free adipocyte preparations of both diabetic GK and control rats. A myo-inositol-containing IPG mediator did not activate G3PAT. Relative to control adipocytes, labeling of GPI by [3H]glucosamine was diminished by 50% and insulin failed to stimulate GPI hydrolysis in GK adipocytes. In contrast to GPI-dependent G3PAT activation, insulin-stimulated hexose transport was intact in adipocytes and soleus and gastrocnemius muscles of the GK rat, as was insulin-induced activation of mitogen-activated protein kinase and protein kinase C. We conclude that (i) chiro-inositol-containing IPG mediator activates G3PAT during insulin action, (ii) diabetic GK rats have a defect in synthesizing or releasing functional chiro-inositol-containing IPG, and (iii) defective IPG-regulated intracellular glucose metabolism contributes importantly to insulin resistance in diabetic GK rats.

  16. An evaluation of platelet-rich plasma without thrombin activation with or without anorganic bone mineral in the treatment of human periodontal intrabony defects.

    Science.gov (United States)

    Rodrigues, Silvia V; Acharya, Anirudh B; Thakur, Srinath L

    2011-01-01

    The efficacy of platelet-rich plasma (PRP) in periodontal regeneration is not well understood and the definite clinical viability of blood derived platelets lacks clarity. Also, the use of thrombin for platelet activation is disputed. Hence, the purpose of this study was to evaluate the efficacy of blood derived platelets without thrombin activation, alone or in combination with bovine anorganic bone mineral (ABM), in the treatment of human periodontal intrabony defects. PRP was prepared using a simple tabletop centrifuge and activated using calcium chloride without the addition of thrombin. This PRP was used alone (in Group A) and in combination with bovine ABM (in Group B) in the treatment of human periodontal angular defects. Both the control and the test groups showed definite improvement in clinical parameters. On comparison, however, there was a statistically significant improvement in the probing pocket depths and relative attachment level in Group B over Group A at 3 and 6 months intervals, whereas at the end of 9 months this difference was not statistically significant. There was no statistically significant difference between the groups with respect to the relative defect depth. Within the limitations of this study and the type of PRP used, i.e. without thrombin mediated activation, it can be concluded that both PRP and PRP combined with bovine ABM results in significant clinical improvement. Albeit statistically insignificant, there is a preponderance of better clinical results with the addition of ABM to PRP. Further studies need to be carried out on a larger sample size to confirm the results of the present study.

  17. Direct electrical stimulation of human cortex evokes high gamma activity that predicts conscious somatosensory perception

    Science.gov (United States)

    Muller, Leah; Rolston, John D.; Fox, Neal P.; Knowlton, Robert; Rao, Vikram R.; Chang, Edward F.

    2018-04-01

    Objective. Direct electrical stimulation (DES) is a clinical gold standard for human brain mapping and readily evokes conscious percepts, yet the neurophysiological changes underlying these percepts are not well understood. Approach. To determine the neural correlates of DES, we stimulated the somatosensory cortex of ten human participants at frequency-amplitude combinations that both elicited and failed to elicit conscious percepts, meanwhile recording neural activity directly surrounding the stimulation site. We then compared the neural activity of perceived trials to that of non-perceived trials. Main results. We found that stimulation evokes distributed high gamma activity, which correlates with conscious perception better than stimulation parameters themselves. Significance. Our findings suggest that high gamma activity is a reliable biomarker for perception evoked by both natural and electrical stimuli.

  18. Expeditious low-temperature sintering of copper nanoparticles with thin defective carbon shells

    Science.gov (United States)

    Kim, Changkyu; Lee, Gyoungja; Rhee, Changkyu; Lee, Minku

    2015-04-01

    The realization of air-stable nanoparticles, well-formulated nanoinks, and conductive patterns based on copper is a great challenge in low-cost and large-area flexible printed electronics. This work reports the synthesis of a conductively interconnected copper structure via thermal sintering of copper inks at a low temperature for a short period of time, with the help of thin defective carbon shells coated onto the copper nanoparticles. Air-stable copper/carbon core/shell nanoparticles (typical size ~23 nm, shell thickness ~1.0 nm) are prepared by means of an electric explosion of wires. Gaseous oxidation of the carbon shells with a defective structure occurs at 180 °C, impacting the choice of organic solvents as well as the sintering conditions to create a crucial neck formation. Isothermal oxidation and reduction treatment at 200 °C for only about 10 min yields an oxide-free copper network structure with an electrical resistivity of 25.1 μΩ cm (14.0 μΩ cm at 250 °C). Finally, conductive copper line patterns are achieved down to a 50 μm width with an excellent printing resolution (standard deviation ~4.0%) onto a polyimide substrate using screen printing of the optimized inks.The realization of air-stable nanoparticles, well-formulated nanoinks, and conductive patterns based on copper is a great challenge in low-cost and large-area flexible printed electronics. This work reports the synthesis of a conductively interconnected copper structure via thermal sintering of copper inks at a low temperature for a short period of time, with the help of thin defective carbon shells coated onto the copper nanoparticles. Air-stable copper/carbon core/shell nanoparticles (typical size ~23 nm, shell thickness ~1.0 nm) are prepared by means of an electric explosion of wires. Gaseous oxidation of the carbon shells with a defective structure occurs at 180 °C, impacting the choice of organic solvents as well as the sintering conditions to create a crucial neck formation

  19. Non Destructive Testing - Identification of Defects in Materials

    Directory of Open Access Journals (Sweden)

    Tibor Bachorec

    2006-01-01

    Full Text Available In electrical impedance tomography (EIT currents are applied through the electrodes attached on the surface of the object, and the resulting voltages are measured using the same or additional electrodes. Internal conductivity distribution is recalculated from the measured voltages and currents. The problem is very ill posed, and therefore, regularization has to be used. The aim is to reconstruct, as accurately as possible, the conductivity distribution s in phantom using finite element method (FEM. In this paper are proposed variations of the regularization term, which are applied to non-destructiveidentification of defects (voids or cracks in conductive material.

  20. Defect engineering: design tools for solid state electrochemical devices

    International Nuclear Information System (INIS)

    Tuller, Harry L.

    2003-01-01

    The interest in solid state electrochemical devices including sensors, fuel cells, batteries, oxygen permeation membranes, etc. has grown rapidly in recent years. Many of the same figures of merit apply to these different applications, the key ones being ionic conduction in solid electrolytes, mixed ionic-electronic conduction (MIEC) in electrodes and permeation membranes, and gas-solid reaction kinetics in sensors and fuel cells. Optimization of device performance often relies on the careful understanding and control of both ionic and electronic defects in the materials that make up the key device components. To date, most materials in use have been discovered serendipitously. A key focus of this paper is on the tools available to scientists and engineers to practice 'defect engineering' for the purpose of optimizing the performance of such materials. Dopants, controlled structural disorder, and interfaces are examined in relation to increasing the conductivity of solid electrolytes. The creation of defect bands is demonstrated as a means for introducing high levels of electronic conductivity into a solid electrolyte for the purpose of creating a mixed conductor and thereby a monolithic fuel cell structure. Dopants are also examined as a means of reducing losses in a high temperature resonant sensor platform. The control of microstructure, down to the nano-scale, is shown capable of inverting the predominant ionic to an electronic charge carrier and thereby markedly modifying electrical properties. Electrochemical bias and light are also discussed in terms of creating defects locally thereby providing means for micromachining a broad range of materials with precise dimensional control, low residual stress and controlled etch rates

  1. Method to probe the electrical activity of dislocations in non-intentionally doped n-GaN

    Energy Technology Data Exchange (ETDEWEB)

    Mimila-Arroyo, J., E-mail: jmimila@cinvestav.mx [Centro de Investigacion y de Estudios Avanzados del Instituto Politecnico Nacional, Av. Instituto Politecnico Nacional No 2508, Mexico D.F., CP 07360 (Mexico); Morales, E. [Centro de Investigacion y de Estudios Avanzados del Instituto Politecnico Nacional, Av. Instituto Politecnico Nacional No 2508, Mexico D.F., CP 07360 (Mexico); Lusson, A. [Groupe d' Etudes de la Matiere Condensee, Universite de Versailles, CNRS (UMR 8635), Batiment FERMAT, 45, Avenue des Etats-Unis, 78035 Versailles (France)

    2012-09-20

    Highlights: Black-Right-Pointing-Pointer This is the first method proposed to probe the electrical activity of dislocations. Black-Right-Pointing-Pointer Based on Hall and resistivity measurements under sub-bad gap illumination. High sensitivity to the charge contained at the dislocations. Black-Right-Pointing-Pointer Is non destructive. Black-Right-Pointing-Pointer And can be applied at some point in the processing of samples and devices. - Abstract: Here is presented a method to probe the electrical activity of dislocations in non-intentionally doped n-GaN epitaxial layers based on the study of their sub-band gap photoconductivity, monitoring their electron concentration and mobility. Non-intentionally doped n-GaN layers bearing charged and thus highly dispersive and recombining dislocations when illuminated with sub-band gap photons show a strong increase on their conductivity, due to an equivalent increase on the electron mobility while the electron concentration remains unchanged. On the other side, non-intentionally doped n-GaN layers bearing electrically inactive dislocations display almost no photoconduction, as both; carrier concentration and their mobility remain unchanged under the same illumination conditions. The method, simultaneously assess the electrical activity of dislocations and the material quality, and can be applied to any other semiconducting material bearing high dislocations densities.

  2. Quantum control of topological defects in magnetic systems

    Science.gov (United States)

    Takei, So; Mohseni, Masoud

    2018-02-01

    Energy-efficient classical information processing and storage based on topological defects in magnetic systems have been studied over the past decade. In this work, we introduce a class of macroscopic quantum devices in which a quantum state is stored in a topological defect of a magnetic insulator. We propose noninvasive methods to coherently control and read out the quantum state using ac magnetic fields and magnetic force microscopy, respectively. This macroscopic quantum spintronic device realizes the magnetic analog of the three-level rf-SQUID qubit and is built fully out of electrical insulators with no mobile electrons, thus eliminating decoherence due to the coupling of the quantum variable to an electronic continuum and energy dissipation due to Joule heating. For a domain wall size of 10-100 nm and reasonable material parameters, we estimate qubit operating temperatures in the range of 0.1-1 K, a decoherence time of about 0.01-1 μ s , and the number of Rabi flops within the coherence time scale in the range of 102-104 .

  3. Defect-based graphene nanoribbon photodetectors: A numerical study

    Energy Technology Data Exchange (ETDEWEB)

    Zarei, M. H.; Sharifi, M. J., E-mail: m-j-sharifi@sbu.ac.ir [Department of Electrical Engineering, Shahid Beheshti University, Tehran 1983963113 (Iran, Islamic Republic of)

    2016-06-07

    Recently, some photodetectors based on graphene have been proposed. In all of these works, current generation was carried out by separation of photo-excited carriers using an electric field, either internal or external. In this work, a new method of producing current which is based on different transmission coefficients for electrons and holes when they travel toward any of the two contacts is proposed. To this end, a single Stone–Wales defect close to one of the two contacts was used to break the channel symmetry. In order to confirm the idea, the non-equilibrium Green's function formalism in real space in conjunction with the tight binding method was used in simulations. In addition, to clarify the results, we present a classical model in which different diffusion constants are assumed for the left going and the right going carriers. Additional simulations for different positions of the defect, different lengths of the ribbon, and different bias voltages were performed, and the results are included in this study.

  4. Topological defects in mixtures of superconducting condensates with different charges

    Science.gov (United States)

    Garaud, Julien; Babaev, Egor

    2014-06-01

    We investigate the topological defects in phenomenological models describing mixtures of charged condensates with commensurate electric charges. Such situations are expected to appear for example in liquid metallic deuterium. This is modeled by a multicomponent Ginzburg-Landau theory where the condensates are coupled to the same gauge field by different coupling constants whose ratio is a rational number. We also briefly discuss the case where electric charges are incommensurate. Flux quantization and finiteness of the energy per unit length dictate that the different condensates have different winding and thus different number of (fractional) vortices. Competing attractive and repulsive interactions lead to molecule-like bound states between fractional vortices. Such bound states have finite energy and carry integer flux quanta. These can be characterized by the CP1 topological invariant that motivates their denomination as skyrmions.

  5. A novel application of pulsed electric field (PEF) processing for improving glutathione (GSH) antioxidant activity.

    Science.gov (United States)

    Wang, Jia; Wang, Ke; Wang, Ying; Lin, Songyi; Zhao, Ping; Jones, Gregory

    2014-10-15

    Glutathione (GSH) was treated by pulsed electric field (PEF) processing to investigate its effect on antioxidant activity. The antioxidant activity of GSH was evaluated using 2,2-diphenyl-1-picrylhydrazy (DPPH) radical inhibition. A Box-Behnken design (BBD) with three independent variables, which were concentration, electric field intensity and pulse frequency was used to establish the regression equation of second-order response surface. Optimal conditions were as follows: GSH concentration 8.86mg/mL, electric field intensity 9.74kV/cm and pulse frequency 2549.08Hz. The DPPH radical inhibition increased from 81.83% to 97.40%. Near-infrared spectroscopy (NIR) and mid-infrared spectroscopy (MIR) were used to analyse the change of structure and functional groups of GSH. Copyright © 2014 Elsevier Ltd. All rights reserved.

  6. Immediate effect of selective neuromuscular electrical stimulation on the electromyographic activity of the vastus medialis oblique muscle

    Directory of Open Access Journals (Sweden)

    Denise DalAva Augusto

    2008-07-01

    Full Text Available http://dx.doi.org/10.5007/1980-0037.2008v10n2p155 The Patellofemoral pain syndrome (PFPS is described as an anterior or retropatellar knee pain in the absence of other associated diseases, and has often been associated with dysfunction of the vastus medialis oblique muscle (VMO. However, several studies have demonstrated the impossibility of selectively activating this muscle with exercises. The aim of the present study was to analyze the immediate effect of neuromuscular electrical stimulation of VMO muscle by means of monitoring the electromyographic activity of the vastus medialis oblique (VMO and vastus lateralis (VL muscles. Eighteen healthy women with a mean age of 23.2 years and mean BMI of 20 Kg/m2 were evaluated. The study protocol included electromyographic analysis of VMO and VL muscles, before and immediately after neuromuscular electrical stimulation of the VMO muscle. During the electromyographic analysis, the volunteers performed maximal voluntary isometric contraction in a 60° knee extension on an isokinetic dynamometer. “Russian current” apparatus was used for electrical stimulation. Results: The data analysis demonstrated a signifi cant increase in VMO activation intensity immediately after it had been electrically stimulated (p=0.0125, whereas VL activation intensity exhibited no signifi cant increase (p=0.924. Moreover, a significant increase in the VMO/VL ratio was also detected (p=0.048. In this study it was observed that electrical stimulation modifiedthe VMO/VL ratio, which suggests electrical stimulation has a benefi cial effect on VMO muscle strength.

  7. Fibrous metaphyseal defects

    International Nuclear Information System (INIS)

    Ritschl, P.; Hajek, P.C.; Pechmann, U.

    1989-01-01

    Sixteen patients with fibrous metaphyseal defects were examined with both plain radiography and magnetic resonance (MR) imaging. Depending on the age of the fibrous metaphyseal defects, characteristic radiomorphologic changes were found which correlated well with MR images. Following intravenous Gadolinium-DTPA injection, fibrous metaphyseal defects invariably exhibited a hyperintense border and signal enhancement. (orig./GDG)

  8. Vertebral defect, anal atresia, cardiac defect, tracheoesophageal fistula/esophageal atresia, renal defect, and limb defect association with Mayer-Rokitansky-Küster-Hauser syndrome in co-occurrence: two case reports and a review of the literature.

    Science.gov (United States)

    Bjørsum-Meyer, Thomas; Herlin, Morten; Qvist, Niels; Petersen, Michael B

    2016-12-21

    The vertebral defect, anal atresia, cardiac defect, tracheoesophageal fistula/esophageal atresia, renal defect, and limb defect association and Mayer-Rokitansky-Küster-Hauser syndrome are rare conditions. We aimed to present two cases with the vertebral defect, anal atresia, cardiac defect, tracheoesophageal fistula/esophageal atresia, renal defect, and limb defect association and Mayer-Rokitansky-Küster-Hauser co-occurrence from our local surgical center and through a systematic literature search detect published cases. Furthermore, we aimed to collect existing knowledge in the embryopathogenesis and genetics in order to discuss a possible link between the vertebral defect, anal atresia, cardiac defect, tracheoesophageal fistula/esophageal atresia, renal defect, and limb defect association and Mayer-Rokitansky-Küster-Hauser syndrome. Our first case was a white girl delivered by caesarean section at 37 weeks of gestation; our second case was a white girl born at a gestational age of 40 weeks. A co-occurrence of vertebral defect, anal atresia, cardiac defect, tracheoesophageal fistula/esophageal atresia, renal defect, and limb defect association and Mayer-Rokitansky-Küster-Hauser syndrome was diagnosed in both cases. We performed a systematic literature search in PubMed ((VACTERL) OR (VATER)) AND ((MRKH) OR (Mayer-Rokitansky-Küster-Hauser) OR (mullerian agenesis) OR (mullerian aplasia) OR (MURCS)) without limitations. A similar search was performed in Embase and the Cochrane library. We added two cases from our local center. All cases (n = 9) presented with anal atresia and renal defect. Vertebral defects were present in eight patients. Rectovestibular fistula was confirmed in seven patients. Along with the uterovaginal agenesis, fallopian tube aplasia appeared in five of nine cases and in two cases ovarian involvement also existed. The co-occurrence of the vertebral defect, anal atresia, cardiac defect, tracheoesophageal fistula/esophageal atresia, renal

  9. Response of Electrical Activity in an Improved Neuron Model under Electromagnetic Radiation and Noise.

    Science.gov (United States)

    Zhan, Feibiao; Liu, Shenquan

    2017-01-01

    Electrical activities are ubiquitous neuronal bioelectric phenomena, which have many different modes to encode the expression of biological information, and constitute the whole process of signal propagation between neurons. Therefore, we focus on the electrical activities of neurons, which is also causing widespread concern among neuroscientists. In this paper, we mainly investigate the electrical activities of the Morris-Lecar (M-L) model with electromagnetic radiation or Gaussian white noise, which can restore the authenticity of neurons in realistic neural network. First, we explore dynamical response of the whole system with electromagnetic induction (EMI) and Gaussian white noise. We find that there are slight differences in the discharge behaviors via comparing the response of original system with that of improved system, and electromagnetic induction can transform bursting or spiking state to quiescent state and vice versa. Furthermore, we research bursting transition mode and the corresponding periodic solution mechanism for the isolated neuron model with electromagnetic induction by using one-parameter and bi-parameters bifurcation analysis. Finally, we analyze the effects of Gaussian white noise on the original system and coupled system, which is conducive to understand the actual discharge properties of realistic neurons.

  10. Response of Electrical Activity in an Improved Neuron Model under Electromagnetic Radiation and Noise

    Directory of Open Access Journals (Sweden)

    Feibiao Zhan

    2017-11-01

    Full Text Available Electrical activities are ubiquitous neuronal bioelectric phenomena, which have many different modes to encode the expression of biological information, and constitute the whole process of signal propagation between neurons. Therefore, we focus on the electrical activities of neurons, which is also causing widespread concern among neuroscientists. In this paper, we mainly investigate the electrical activities of the Morris-Lecar (M-L model with electromagnetic radiation or Gaussian white noise, which can restore the authenticity of neurons in realistic neural network. First, we explore dynamical response of the whole system with electromagnetic induction (EMI and Gaussian white noise. We find that there are slight differences in the discharge behaviors via comparing the response of original system with that of improved system, and electromagnetic induction can transform bursting or spiking state to quiescent state and vice versa. Furthermore, we research bursting transition mode and the corresponding periodic solution mechanism for the isolated neuron model with electromagnetic induction by using one-parameter and bi-parameters bifurcation analysis. Finally, we analyze the effects of Gaussian white noise on the original system and coupled system, which is conducive to understand the actual discharge properties of realistic neurons.

  11. Defect-mediated magnetism of transition metal doped zinc oxide thin films

    Science.gov (United States)

    Roberts, Bradley Kirk

    Magnetism in transition metal doped wide band-gap materials is of interest to further the fundamental science of materials and future spintronics applications. Large inter-dopant separations require mediation of ferromagnetism by some method; carrier-mediated mechanisms are typically applicable to dilute magnetic semiconductors with low Curie temperatures. Dilute magnetic oxides, commonly with poor conductivity and TC above room temperature, cannot be described within this theory. Recent experiment and theory developments suggest that ferromagnetic exchange in these materials can be mediated by defects. This research includes experimental results justifying and developing this approach. Thin films of Cr doped ZnO (band gap ˜3.3 eV) were deposited with several processing variations to enhance the effects of either 0-dimensional (vacancy, hydrogen-related defect) or two-dimensional defects (surface/interface) and thereby affect magnetism and conductivity. We observe surface magnetism in dielectric thin films of oxygen-saturated ZnO:Cr with spontaneous magnetic moment and conductance dropping approximately exponentially with increasing thickness. Uniform defect concentrations would not result in such magnetic ordering behavior indicating that magnetism is mediated either by surface defects or differing concentrations of point defects near the surface. Polarized neutron reflectivity profiling confirms a magnetically active region of ˜8 nm at the film surface. Hydrogen is notoriously present as a defect and carrier dopant in ZnO, and artificial introduction of hydrogen in dielectric ZnO:Cr films results in varying electronic and magnetic behavior. Free carriers introduced with hydrogen doping are not spin-polarized requiring an alternative explanation for ferromagnetism. We find from positron annihilation spectroscopy measurements that hydrogen doping increases the concentration of an altered VZn-related defect (a preliminary interpretation) throughout the film, which

  12. Electrical activation of phosphorus in silicon

    International Nuclear Information System (INIS)

    Goh, K.E.J.; Oberbeck, L.; Simmons, M.Y.; Clark, R.G.

    2003-01-01

    Full text: We present studies of phosphorus δ-doping in silicon with a view to determining the degree of electrical activation of the dopants. These results have a direct consequence for the use of phosphorus as a qubit in a silicon-based quantum computer such as that proposed by Kane. Room temperature and 4 K Hall effect measurements are presented for phosphorus δ-doped layers grown in n-type silicon using two different methods. In the first method, the δ-layer was deposited by a phosphorus effusion cell in an MBE chamber. In the second method, the Si surface was dosed with phosphine gas and then annealed to 550 deg C to incorporate P into the substrate. In both methods, the P δ-doped layer was subsequently encapsulated by ∼25 nm of Si grown epitaxially. We discuss the implications of our results on the fabrication of the Kane quantum computer

  13. Young Scientists Explore Electricity & Magnetism. Book 7--Intermediate Level. A Good Apple Activity Book.

    Science.gov (United States)

    DeBruin, Jerry

    Designed to develop creativity in young learners, this book contains interdisciplinary activities which focus on the theme of electricity and magnetism. Activity pages are provided that can serve as front and back covers of a student booklet and the suggested activities can be duplicated for insertion between the covers resulting in a booklet for…

  14. Soft Tissue Reconstruction of Complete Circumferential Defects of the Upper Extremity

    Directory of Open Access Journals (Sweden)

    Zhi Yang Ng

    2017-03-01

    Full Text Available BackgroundUpper extremity soft tissue defects with complete circumferential involvement are not common. Coupled with the unique anatomy of the upper extremity, the underlying etiology of such circumferential soft tissue defects represent additional reconstructive challenges that require treatment to be tailored to both the patient and the wound. The aim of this study is to review the various options for soft tissue reconstruction of complete circumferential defects in the upper extremity.MethodsA literature review of PubMed and MEDLINE up to December 2016 was performed. The current study focuses on forearm and arm defects from the level at or proximal to the wrist and were assessed based on Tajima's classification (J Trauma 1974. Data reviewed for analysis included patient demographics, causality, defect size, reconstructive technique(s employed, and postoperative follow-up and functional outcomes (when available.ResultsIn accordance with the Preferred Reporting Items for Systematic Reviews and Meta-Analyses guidelines, 14 unique articles were identified for a total of 50 patients (mean=28.1 years. Underlying etiologies varied from extensive thermal or electrical burns to high impact trauma leading to degloving or avulsion, crush injuries, or even occur iatrogenically after tumor extirpation or extensive debridement. Treatment options ranged from the application of negative pressure wound dressings to the opposite end of the spectrum in hand transplantation.ConclusionsWith the evolution of reconstructive techniques over time, the extent of functional and aesthetic rehabilitation of these complex upper extremity injuries has also improved. The proposed management algorithm comprehensively addresses the inherent challenges associated with these complex cases.

  15. Pressurised electro-osmotic dewatering of activated and anaerobically digested sludges: electrical variables analysis.

    Science.gov (United States)

    Citeau, M; Olivier, J; Mahmoud, A; Vaxelaire, J; Larue, O; Vorobiev, E

    2012-09-15

    Pressurised electro-osmotic dewatering (PEOD) of two sewage sludges (activated and anaerobically digested) was studied under constant electric current (C.C.) and constant voltage (C.V.) with a laboratory chamber simulating closely an industrial filter. The influence of sludge characteristics, process parameters, and electrode/filter cloth position was investigated. The next parameters were tested: 40 and 80 A/m², 20, 30, and 50 V-for digested sludge dewatering; and 20, 40 and 80 A/m², 20, 30, and 50 V-for activated sludge dewatering. Effects of filter cloth electric resistance and initial cake thickness were also investigated. The application of PEOD provides a gain of 12 points of dry solids content for the digested sludge (47.0% w/w) and for the activated sludge (31.7% w/w). In PEOD processed at C.C. or at C.V., the dewatering flow rate was similar for the same electric field intensity. In C.C. mode, both the electric resistance of cake and voltage increase, causing a temperature rise by ohmic effect. In C.V. mode, a current intensity peak was observed in the earlier dewatering period. Applying at first a constant current and later on a constant voltage, permitted to have better control of ohmic heating effect. The dewatering rate was not significantly affected by the presence of filter cloth on electrodes, but the use of a thin filter cloth reduced remarkably the energy consumption compared to a thicker one: 69% of reduction energy input at 45% w/w of dry solids content. The reduction of the initial cake thickness is advantageous to increase the final dry solids content. Copyright © 2012 Elsevier Ltd. All rights reserved.

  16. ILT based defect simulation of inspection images accurately predicts mask defect printability on wafer

    Science.gov (United States)

    Deep, Prakash; Paninjath, Sankaranarayanan; Pereira, Mark; Buck, Peter

    2016-05-01

    At advanced technology nodes mask complexity has been increased because of large-scale use of resolution enhancement technologies (RET) which includes Optical Proximity Correction (OPC), Inverse Lithography Technology (ILT) and Source Mask Optimization (SMO). The number of defects detected during inspection of such mask increased drastically and differentiation of critical and non-critical defects are more challenging, complex and time consuming. Because of significant defectivity of EUVL masks and non-availability of actinic inspection, it is important and also challenging to predict the criticality of defects for printability on wafer. This is one of the significant barriers for the adoption of EUVL for semiconductor manufacturing. Techniques to decide criticality of defects from images captured using non actinic inspection images is desired till actinic inspection is not available. High resolution inspection of photomask images detects many defects which are used for process and mask qualification. Repairing all defects is not practical and probably not required, however it's imperative to know which defects are severe enough to impact wafer before repair. Additionally, wafer printability check is always desired after repairing a defect. AIMSTM review is the industry standard for this, however doing AIMSTM review for all defects is expensive and very time consuming. Fast, accurate and an economical mechanism is desired which can predict defect printability on wafer accurately and quickly from images captured using high resolution inspection machine. Predicting defect printability from such images is challenging due to the fact that the high resolution images do not correlate with actual mask contours. The challenge is increased due to use of different optical condition during inspection other than actual scanner condition, and defects found in such images do not have correlation with actual impact on wafer. Our automated defect simulation tool predicts

  17. Active RF Pulse Compression Using An Electrically Controlled Semiconductor Switch

    Energy Technology Data Exchange (ETDEWEB)

    Guo, Jiquan; Tantawi, Sami; /SLAC

    2007-01-10

    First we review the theory of active pulse compression systems using resonant delay lines. Then we describe the design of an electrically controlled semiconductor active switch. The switch comprises an active window and an overmoded waveguide three-port network. The active window is based on a four-inch silicon wafer which has 960 PIN diodes. These are spatially combined in an overmoded waveguide. We describe the philosophy and design methodology for the three-port network and the active window. We then present the results of using this device to compress 11.4 GHz RF signals with high compression ratios. We show how the system can be used with amplifier like sources, in which one can change the phase of the source by manipulating the input to the source. We also show how the active switch can be used to compress a pulse from an oscillator like sources, which is not possible with passive pulse compression systems.

  18. Defect Engineering in Few-Layer Phosphorene.

    Science.gov (United States)

    Sharma, Ankur; Wen, Bo; Liu, Boqing; Myint, Ye Win; Zhang, Han; Lu, Yuerui

    2018-04-01

    Defect engineering in 2D phosphorene samples is becoming an important and powerful technique to alter their properties, enabling new optoelectronic applications, particularly at the infrared wavelength region. Defect engineering in a few-layer phosphorene sample via introduction of substrate trapping centers is realized. In a three-layer (3L) phosphorene sample, a strong photoluminescence (PL) emission peak from localized excitons at ≈1430 nm is observed, a much lower energy level than free excitonic emissions. An activation energy of ≈77 meV for the localized excitons is determined in temperature-dependent PL measurements. The relatively high activation energy supports the strong stability of the localized excitons even at elevated temperature. The quantum efficiency of localized exciton emission in 3L phosphorene is measured to be approximately three times higher than that of free excitons. These results could enable exciting applications in infrared optoelectronics. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  19. Defect detection based on extreme edge of defective region histogram

    Directory of Open Access Journals (Sweden)

    Zouhir Wakaf

    2018-01-01

    Full Text Available Automatic thresholding has been used by many applications in image processing and pattern recognition systems. Specific attention was given during inspection for quality control purposes in various industries like steel processing and textile manufacturing. Automatic thresholding problem has been addressed well by the commonly used Otsu method, which provides suitable results for thresholding images based on a histogram of bimodal distribution. However, the Otsu method fails when the histogram is unimodal or close to unimodal. Defects have different shapes and sizes, ranging from very small to large. The gray-level distributions of the image histogram can vary between unimodal and multimodal. Furthermore, Otsu-revised methods, like the valley-emphasis method and the background histogram mode extents, which overcome the drawbacks of the Otsu method, require preprocessing steps and fail to use the general threshold for multimodal defects. This study proposes a new automatic thresholding algorithm based on the acquisition of the defective region histogram and the selection of its extreme edge as the threshold value to segment all defective objects in the foreground from the image background. To evaluate the proposed defect-detection method, common standard images for experimentation were used. Experimental results of the proposed method show that the proposed method outperforms the current methods in terms of defect detection.

  20. Exploring and Controlling Intrinsic Defect Formation in SnO2 Thin Films

    KAUST Repository

    Porte, Yoann; Maller, Robert; Faber, Hendrik; Alshareef, Husam N.; Anthopoulos, Thomas D; McLachlan, Martyn

    2015-01-01

    By investigating the influence of key growth variables on the measured structural and electrical properties of SnO2 prepared by Pulsed Laser Deposition (PLD) we demonstrate fine control of intrinsic n-type defect formation. Variation of growth temperatures shows oxygen vacancies (VO) as the dominant defect which can be compensated for by thermal oxidation at temperatures > 500°C. As a consequence films with carrier concentrations in the range 1016-1019 cm-3 can be prepared by adjusting temperature alone. By altering the background oxygen pressure (PD) we observe a change in the dominant defect - from tin interstitials (Sni) at low PD (< 50 mTorr) to VO at higher oxygen pressures with similar ranges of carrier concentrations observed. Finally we demonstrate the importance of controlling the composition target surface used for PLD by exposing a target to > 100,000 laser pulses. Here carrier concentrations > 1x1020 cm-3 are observed that are attributed to high concentrations of Sni which cannot be completely compensated for by modifying the growth parameters.