WorldWideScience

Sample records for electric switches

  1. Understanding household switching behavior in the retail electricity market

    International Nuclear Information System (INIS)

    Yang, Yingkui

    2014-01-01

    Deregulation of the Danish retail electricity market nearly a decade ago has produced little consumer switching among suppliers or renegotiation of supplier service contracts. From an energy policy perspective, a certain amount of supplier switching is an important indicator of the success of market deregulation. This argues that poor relationship management and a lack of economic benefits are two critical barriers to consumer switching. Latent class analysis indicates that only 11.4% of consumers are non-switchers, whereas 41.1% can be considered potential switchers and approximately one-half (47.5%) can be considered apathetic consumers. We also discuss the managerial implications for both electricity suppliers and policy makers. - Highlights: • This paper investigates the barriers for electricity supplier switching in Denmark. • Four switching barriers were identified. • Relationship management and economic benefits are critical for consumer switching. • Three consumer segments for electricity supplier switching were identified

  2. Bistable fluidic valve is electrically switched

    Science.gov (United States)

    Fiet, O.; Salvinski, R. J.

    1970-01-01

    Bistable control valve is selectively switched by direct application of an electrical field to divert fluid from one output channel to another. Valve is inexpensive, has no moving parts, and operates on fluids which are relatively poor electrical conductors.

  3. 49 CFR 236.207 - Electric lock on hand-operated switch; control.

    Science.gov (United States)

    2010-10-01

    ..., AND APPLIANCES Automatic Block Signal Systems Standards § 236.207 Electric lock on hand-operated switch; control. Electric lock on hand-operated switch shall be controlled so that it cannot be unlocked... 49 Transportation 4 2010-10-01 2010-10-01 false Electric lock on hand-operated switch; control...

  4. Picosecond Electric-Field-Induced Threshold Switching in Phase-Change Materials.

    Science.gov (United States)

    Zalden, Peter; Shu, Michael J; Chen, Frank; Wu, Xiaoxi; Zhu, Yi; Wen, Haidan; Johnston, Scott; Shen, Zhi-Xun; Landreman, Patrick; Brongersma, Mark; Fong, Scott W; Wong, H-S Philip; Sher, Meng-Ju; Jost, Peter; Kaes, Matthias; Salinga, Martin; von Hoegen, Alexander; Wuttig, Matthias; Lindenberg, Aaron M

    2016-08-05

    Many chalcogenide glasses undergo a breakdown in electronic resistance above a critical field strength. Known as threshold switching, this mechanism enables field-induced crystallization in emerging phase-change memory. Purely electronic as well as crystal nucleation assisted models have been employed to explain the electronic breakdown. Here, picosecond electric pulses are used to excite amorphous Ag_{4}In_{3}Sb_{67}Te_{26}. Field-dependent reversible changes in conductivity and pulse-driven crystallization are observed. The present results show that threshold switching can take place within the electric pulse on subpicosecond time scales-faster than crystals can nucleate. This supports purely electronic models of threshold switching and reveals potential applications as an ultrafast electronic switch.

  5. Resistance switching induced by electric fields in manganite thin films

    International Nuclear Information System (INIS)

    Villafuerte, M; Juarez, G; Duhalde, S; Golmar, F; Degreef, C L; Heluani, S P

    2007-01-01

    In this work, we investigate the polarity-dependent Electric Pulses Induced Resistive (EPIR) switching phenomenon in thin films driven by electric pulses. Thin films of 0.5 Ca 0.5 MnO 3 (manganite) were deposited by PLD on Si substrate. The transport properties at the interface between the film and metallic electrode are characterized in order to study the resistance switching. Sample thermal treatment and electrical field history are important to be considered for get reproducible EPIR effect. Carriers trapping at the interfaces are considered as a possible explanation of our results

  6. Photochromic systems as models for opto-electrical switches

    Czech Academy of Sciences Publication Activity Database

    Lutsyk, P.; Sworakowski, J.; Janus, K.; Nešpůrek, Stanislav; Kochalska, Anna

    2010-01-01

    Roč. 522, - (2010), s. 511-528 ISSN 1542-1406 R&D Projects: GA AV ČR KAN401770651 Institutional research plan: CEZ:AV0Z40500505 Keywords : charge carrier transport * molecular material * opto-electrical switch Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering Impact factor: 0.543, year: 2010

  7. Electrical switching and memory phenomena observed in redox-gradient dendrimer sandwich devices

    OpenAIRE

    Li, JianChang; Blackstock, Silas C.; Szulczewski, Greg J.

    2005-01-01

    We report on the fabrication of dendrimer sandwich devices with electrical switching and memory properties. The storage media is consisted of a redox-gradient dendrimer layer sandwiched in organic barrier thin films. The dendrimer layer acts as potential well where redox-state changes and consequent electrical transitions of the embedded dendrimer molecules are expected to be effectively triggered and retained, respectively. Experimental results indicated that electrical switching could be re...

  8. Determination of the mechanical thermostat electrical contacts switching quality with sound and vibration analysis

    Energy Technology Data Exchange (ETDEWEB)

    Rejc, Jure; Munih, Marko [University of Ljubljana, Ljubljana (Slovenia)

    2017-05-15

    A mechanical thermostat is a device that switches heating or cooling appliances on or off based on temperature. For this kind of use, electronic or mechanical switching concepts are applied. During the production of electrical contacts, several irregularities can occur leading to improper switching events of the thermostat electrical contacts. This paper presents a non-obstructive method based on the fact that when the switching event occurs it can be heard and felt by human senses. We performed several laboratory tests with two different methods. The first method includes thermostat switch sound signal analysis during the switching event. The second method is based on sampling of the accelerometer signal during the switching event. The results show that the sound analysis approach has great potential. The approach enables an accurate determination of the switching event even if the sampled signal carries also the switching event of the neighbour thermostat.

  9. Households' switching behavior between electricity suppliers in Sweden

    Energy Technology Data Exchange (ETDEWEB)

    Ek, Kristina; Soederholm, Patrik [Economics Unit, Luleaa University of Technology, 971 87 Luleaa (Sweden)

    2008-12-15

    The overall purpose of this paper is to analyze the factors affecting households' decisions to: (a) switch to a new electricity supplier; and (b) actively renegotiate the electricity contract with the prevailing supplier. The study is based on 536 survey responses from Swedish households and they are analyzed econometrically using probit regression techniques. The analysis is based on a theoretical framework, which embraces both economic and psychological motives behind household decision-making. The results show that households that anticipate significant economic benefits from choosing a more active behavior are also more likely to purse this, while those with smaller potential gains (e.g., households without electric heating) are less likely to change supplier and/or renegotiate their contracts. The impact of overall electricity costs and knowledge about these is particularly important for the latter decision, while respondents that perceive relatively high search and information costs are less likely to switch to an alternative electricity supplier. Moreover, constraints on time, attention, and the ability to process information, may lead to optimizing analyses being replaced by imprecise routines and rules of thumb, and the benefits of the status quo appear to represent one of those simplifying rules. This also opens up for other influences on households' activity such as social interaction and media discourses that raise the attention level. Our results show that these influences are more likely to affect households' choice to switch to new service providers, i.e., the one area of the two investigated here that put the most demand on people's ability to search for and process information. (author)

  10. Field weakening performance of flux-switching machines for hybrid/electric vehicles

    NARCIS (Netherlands)

    Tang, Y.; Paulides, J.J.H.; Lomonova, E.A.

    2015-01-01

    Flux-switching machines (FSMs) are a viable candidate for electric propulsion of hybrid/electric vehicles. This paper investigates the field weakening performance of FSMs. The investigation starts with general torque and voltage expressions, which reveal the relationships between certain parameters

  11. Anisotropy of domain switching in prepoled lead titanate zirconate ceramics under multiaxial electrical loading

    Science.gov (United States)

    Liu, Yuan-Ming; Li, Fa-Xin; Fang, Dai-Ning

    2007-01-01

    The authors report an observation of anisotropic domain switching process in prepoled lead titanate zirconate (PZT) ceramics under multiaxial electrical loading. Prepoled PZT blocks were obliquely cut to apply an electric field at discrete angles θ (0°-180°) to the initial poling direction. Both the coercive field and switchable polarization are found to decrease significantly when sinθ increases from zero to unity. The measured strain curves show that most domains that accomplished 180° domain switching actually experienced two successive 90° switching. The oriented domain texture after poling plus the induced nonuniform stress are used to explain the observed domain switching anisotropy.

  12. Precessional switching of antiferromagnets by electric field induced Dzyaloshinskii-Moriya torque

    Science.gov (United States)

    Kim, T. H.; Grünberg, P.; Han, S. H.; Cho, B. K.

    2018-05-01

    Antiferromagnetic insulators (AFIs) have attracted much interest from many researchers as promising candidates for use in ultrafast, ultralow-dissipation spintronic devices. As a fast method of reversing magnetization, precessional switching is realized when antiferromagnetic Néel orders l =(s1+s2 )/2 surmount the magnetic anisotropy or potential barrier in a given magnetic system, which is described well by the antiferromagnetic plane pendulum (APP) model. Here, we report that, as an alternative switching scenario, the direct coupling of an electric field with Dzyaloshinskii-Moriya (DM) interaction, which stems from spin-orbit coupling, is exploited for optimal switching. We derive the pendulum equation of motion of antiferromagnets, where DM torque is induced by a pulsed electric field. The temporal DM interaction is found to not only be in the form of magnetic torques (e.g., spin-orbit torque or magnetic field) but also modifies the magnetic potential that limits l 's activity; as a result, appropriate controls (e.g., direction, magnitude, and pulse shape) of the induced DM vector realize deterministic reversal in APP. The results present an approach for the control of a magnetic storage device by means of an electric field.

  13. Development of high electrical resistance persistent current switch for high speed energization system

    International Nuclear Information System (INIS)

    Jizo, Y.; Furuta, Y.; Nakashima, H.

    1986-01-01

    Japanese National Railways is now developing a superconducting magnetically-levitated train system. A persistent current switch is incorporated in the super-conducting magnet used in the magnetically-levitated train. In recent years, the switch has been required to have higher electrical resistance during its off-state in order to realize the high speed energization/de-energization system of the superconducting magnets. The system aims to decrease evaporation volume of liquid helium during the energization/de-energization of the magnet, by means of energizing the superconducting magnet with high current increasing/decreasing rate. Consequently, it would be possible to decrease the dependence of the on-board magnet system upon the ground cooling system. Through the development of a stable superconductive wire material and a coil structure for the persistent current switch using many small model switches which were produced in order to improve their current carrying capacities, the authors have succeeded in manufacturing the high electrical resistance persistent current switch whose electrical resistance was 5 ohms. The switch, of cylindrical shape, has a diameter of about 100mm, a length of about 100mm. These 5 ohm PCSs are now functioning in stable conditions being incorporated in the superconducting magnets of No.2 vehicle of MLU001 at the JNR's Miyazaki test track. Further, the authors are now developing the PCS of still higher resistance values, such as 50 ohms, through studies for stabilization in structural aspects of the winding and obtaining results therefrom

  14. Structural health monitoring of high voltage electrical switch ceramic insulators in seismic areas

    OpenAIRE

    REBILLAT, Marc; BARTHES, Clément; MECHBAL, Nazih; MOSALAM, Khalid M.

    2014-01-01

    International audience; High voltage electrical switches are crucial components to restart rapidly the electrical network right after an earthquake. But there currently exists no automatic procedure to check if these ceramic insulators have suffered after an earthquake, and there exists no method to recertify a given switch. To deploy a vibration-based structural health monitoring method on ceramic insulators a large shake table able to generate accelerations up to 3 g was used. The idea unde...

  15. All-electric-controlled spin current switching in single-molecule magnet-tunnel junctions

    Science.gov (United States)

    Zhang, Zheng-Zhong; Shen, Rui; Sheng, Li; Wang, Rui-Qiang; Wang, Bai-Gen; Xing, Ding-Yu

    2011-04-01

    A single-molecule magnet (SMM) coupled to two normal metallic electrodes can both switch spin-up and spin-down electronic currents within two different windows of SMM gate voltage. Such spin current switching in the SMM tunnel junction arises from spin-selected single electron resonant tunneling via the lowest unoccupied molecular orbit of the SMM. Since it is not magnetically controlled but all-electrically controlled, the proposed spin current switching effect may have potential applications in future spintronics.

  16. Electrical modulation and switching of transverse acoustic phonons

    Science.gov (United States)

    Jeong, H.; Jho, Y. D.; Rhim, S. H.; Yee, K. J.; Yoon, S. Y.; Shim, J. P.; Lee, D. S.; Ju, J. W.; Baek, J. H.; Stanton, C. J.

    2016-07-01

    We report on the electrical manipulation of coherent acoustic phonon waves in GaN-based nanoscale piezoelectric heterostructures which are strained both from the pseudomorphic growth at the interfaces as well as through external electric fields. In such structures, transverse symmetry within the c plane hinders both the generation and detection of the transverse acoustic (TA) modes, and usually only longitudinal acoustic phonons are generated by ultrafast displacive screening of potential gradients. We show that even for c -GaN, the combined application of lateral and vertical electric fields can not only switch on the normally forbidden TA mode, but they can also modulate the amplitudes and frequencies of both modes. By comparing the transient differential reflectivity spectra in structures with and without an asymmetric potential distribution, the role of the electrical controllability of phonons was demonstrated as changes to the propagation velocities, the optical birefringence, the electrically polarized TA waves, and the geometrically varying optical sensitivities of phonons.

  17. Greenhouse gas emission reduction by means of fuel switching in electricity generation: Addressing the potentials

    International Nuclear Information System (INIS)

    Delarue, Erik; D'haeseleer, William

    2008-01-01

    Many countries committed themselves in the Kyoto protocol to reduce greenhouse gas (GHG) emissions. Some of these targeted emission reductions could result from a switch from coal-fired to gas-fired electricity generation. The focus in this work lies on Western Europe, with the presence of the European Union Emission Trading Scheme (EU ETS). For the switching to occur, several conditions have to be fulfilled. First, an economical incentive must be present, i.e. a sufficiently high European Union Allowance (EUA) price together with a sufficiently low natural gas price. Second, the physical potential for switching must exist, i.e. at a given load, there must remain enough power plants not running to make switching possible. This paper investigates what possibilities exist for switching coal-fired plants for gas-fired plants, dependent on the load level (the latter condition above). A fixed allowance cost and a variable natural gas price are assumed. The method to address GHG emission reduction potentials is first illustrated in a methodological case. Next, the GHG emission reduction potentials are addressed for several Western European countries together with a relative positioning of their electricity generation. GHG emission reduction potentials are also compared with simulation results. GHG emission reduction potentials tend to be significant. The Netherlands have a very widespread switching zone, so GHG emission reduction is practically independent of electricity generation. Other counties, like Germany, Spain and Italy could reduce GHG emissions significantly by switching. With an allowance cost following the switch level of a 50% efficient gas-fired plant and a 40% efficient coal-fired plant in the summer season (like in 2005), the global GHG emission reduction (in the electricity generating sector) for the eight modeled zones could amount to 19%

  18. Implementation of Single Phase Soft Switched PFC Converter for Plug-in-Hybrid Electric Vehicles

    Directory of Open Access Journals (Sweden)

    Aiswariya Sekar

    2015-11-01

    Full Text Available This paper presents a new soft switching boost converter with a passive snubber cell without additional active switches for battery charging systems. The proposed snubber finds its application in the front-end ac-dc converter of Plug-in Hybrid Electric Vehicle (PHEV battery chargers. The proposed auxiliary snubber circuit consists of an inductor, two capacitors and two diodes. The new converter has the advantages of continuous input current, low switching stresses, high voltage gain without extreme duty cycle, minimized charger size and charging time and fewer amounts of cost and electricity drawn from the utility at higher switching frequencies. The switch is made to turn ON by Zero Current Switching (ZCS and turn OFF by Zero Voltage Switching (ZVS. The detailed steady state analysis of the novel ac-dc Zero Current- Zero Voltage Switching (ZC-ZVS boost Power Factor Correction (PFC converter is presented with its operating principle. The experimental prototype of 20 kHz, 100 W converter verifies the theoretical analysis. The power factor of the prototype circuit reaches near unity with an efficiency of 97%, at nominal output power for a ±10% variation in the input voltage and ±20% variation in the snubber component values.

  19. Evaluation of the contact switch materials in high voltage power supply for generate of underwater shockwave by electrical discharge

    Directory of Open Access Journals (Sweden)

    K Higa

    2016-10-01

    Full Text Available We have developed the high voltage power-supply unit by Cockcroft-Walton circuit for ingenerate high pressure due to underwater shockwave by electrical discharge. This high voltage power supply has the problem of the metal contact switch operation that contact switch stop by melting and bonding due to electrical spark. We have studied the evaluation of materials of contact switch for the reducing electrical energy loss and the problem of contact switch operation. In this research, measurement of discharge voltage and high pressure due to underwater shockwave was carried out using the contact switch made of different materials as brass plate, brass-carbon plate-brass and carbon block. The contact switch made of carbon is effective to reduce energy loss and problem of contactor switch operation.

  20. Markov switching of the electricity supply curve and power prices dynamics

    Science.gov (United States)

    Mari, Carlo; Cananà, Lucianna

    2012-02-01

    Regime-switching models seem to well capture the main features of power prices behavior in deregulated markets. In a recent paper, we have proposed an equilibrium methodology to derive electricity prices dynamics from the interplay between supply and demand in a stochastic environment. In particular, assuming that the supply function is described by a power law where the exponent is a two-state strictly positive Markov process, we derived a regime switching dynamics of power prices in which regime switches are induced by transitions between Markov states. In this paper, we provide a dynamical model to describe the random behavior of power prices where the only non-Brownian component of the motion is endogenously introduced by Markov transitions in the exponent of the electricity supply curve. In this context, the stochastic process driving the switching mechanism becomes observable, and we will show that the non-Brownian component of the dynamics induced by transitions from Markov states is responsible for jumps and spikes of very high magnitude. The empirical analysis performed on three Australian markets confirms that the proposed approach seems quite flexible and capable of incorporating the main features of power prices time-series, thus reproducing the first four moments of log-returns empirical distributions in a satisfactory way.

  1. Modeling the choice to switch from fuelwood to electricity. Implications for giant panda habitat conservation

    International Nuclear Information System (INIS)

    An, Li; Liu, Jianguo; Linderman, Marc A.; Lupi, Frank; Huang, Jinyan

    2002-01-01

    Despite its status as a nature reserve, Wolong Nature Reserve (China) has experienced continued loss of giant panda habitat due to human activities such as fuelwood collection. Electricity, though available throughout Wolong, has not replaced fuelwood as an energy source. We used stated preference data obtained from in-person interviews to estimate a random utility model of the choice of adopting electricity for cooking and heating. Willingness to switch to electricity was explained by demographic and electricity factors (price, voltage, and outage frequency). In addition to price, non-price factors such as voltage and outage frequency significantly affect the demand. Thus, lowering electricity prices and increasing electricity quality would encourage local residents to switch from fuelwood to electricity and should be considered in the mix of policies to promote conservation of panda habitat

  2. Modeling the choice to switch from fuelwood to electricity. Implications for giant panda habitat conservation

    Energy Technology Data Exchange (ETDEWEB)

    An, Li; Liu, Jianguo; Linderman, Marc A. [Department of Fisheries and Wildlife, Michigan State University, 13 Natural Resources Building, 48824 East Lansing, MI (United States); Lupi, Frank [Departments of Agricultural Economics and Fisheries and Wildlife, Michigan State University, 213F Agriculture Hall, 48824 East Lansing, MI (United States); Huang, Jinyan [Wolong Nature Reserve Administration, Wenchuan County, 623002 Sichuan Province (China)

    2002-09-01

    Despite its status as a nature reserve, Wolong Nature Reserve (China) has experienced continued loss of giant panda habitat due to human activities such as fuelwood collection. Electricity, though available throughout Wolong, has not replaced fuelwood as an energy source. We used stated preference data obtained from in-person interviews to estimate a random utility model of the choice of adopting electricity for cooking and heating. Willingness to switch to electricity was explained by demographic and electricity factors (price, voltage, and outage frequency). In addition to price, non-price factors such as voltage and outage frequency significantly affect the demand. Thus, lowering electricity prices and increasing electricity quality would encourage local residents to switch from fuelwood to electricity and should be considered in the mix of policies to promote conservation of panda habitat.

  3. Electrical Switching in Thin Film Structures Based on Transition Metal Oxides

    Directory of Open Access Journals (Sweden)

    A. Pergament

    2015-01-01

    Full Text Available Electrical switching, manifesting itself in the nonlinear current-voltage characteristics with S- and N-type NDR (negative differential resistance, is inherent in a variety of materials, in particular, transition metal oxides. Although this phenomenon has been known for a long time, recent suggestions to use oxide-based switching elements as neuristor synapses and relaxation-oscillation circuit components have resumed the interest in this area. In the present review, we describe the experimental facts and theoretical models, mainly on the basis of the Mott transition in vanadium dioxide as a model object, of the switching effect with special emphasis on the emerging applied potentialities for oxide electronics.

  4. Electric field control of deterministic current-induced magnetization switching in a hybrid ferromagnetic/ferroelectric structure

    Science.gov (United States)

    Cai, Kaiming; Yang, Meiyin; Ju, Hailang; Wang, Sumei; Ji, Yang; Li, Baohe; Edmonds, Kevin William; Sheng, Yu; Zhang, Bao; Zhang, Nan; Liu, Shuai; Zheng, Houzhi; Wang, Kaiyou

    2017-07-01

    All-electrical and programmable manipulations of ferromagnetic bits are highly pursued for the aim of high integration and low energy consumption in modern information technology. Methods based on the spin-orbit torque switching in heavy metal/ferromagnet structures have been proposed with magnetic field, and are heading toward deterministic switching without external magnetic field. Here we demonstrate that an in-plane effective magnetic field can be induced by an electric field without breaking the symmetry of the structure of the thin film, and realize the deterministic magnetization switching in a hybrid ferromagnetic/ferroelectric structure with Pt/Co/Ni/Co/Pt layers on PMN-PT substrate. The effective magnetic field can be reversed by changing the direction of the applied electric field on the PMN-PT substrate, which fully replaces the controllability function of the external magnetic field. The electric field is found to generate an additional spin-orbit torque on the CoNiCo magnets, which is confirmed by macrospin calculations and micromagnetic simulations.

  5. Kinetics of Domain Switching by Mechanical and Electrical Stimulation in Relaxor-Based Ferroelectrics

    Science.gov (United States)

    Chen, Zibin; Hong, Liang; Wang, Feifei; An, Xianghai; Wang, Xiaolin; Ringer, Simon; Chen, Long-Qing; Luo, Haosu; Liao, Xiaozhou

    2017-12-01

    Ferroelectric materials have been extensively explored for applications in high-density nonvolatile memory devices because of their ferroelectric-ferroelastic domain-switching behavior under electric loading or mechanical stress. However, the existence of ferroelectric and ferroelastic backswitching would cause significant data loss, which affects the reliability of data storage. Here, we apply in situ transmission electron microscopy and phase-field modeling to explore the unique ferroelastic domain-switching kinetics and the origin of this in relaxor-based Pb (Mg1 /3Nb2 /3)O3-33 % PbTiO3 single-crystal pillars under electrical and mechanical stimulations. Results showed that the electric-mechanical hysteresis loop shifted for relaxor-based single-crystal pillars because of the low energy levels of domains in the material and the constraint on the pillars, resulting in various mechanically reversible and irreversible domain-switching states. The phenomenon can potentially be used for advanced bit writing and reading in nonvolatile memories, which effectively overcomes the backswitching problem and broadens the types of ferroelectric materials for nonvolatile memory applications.

  6. Electric field-triggered metal-insulator transition resistive switching of bilayered multiphasic VOx

    Science.gov (United States)

    Won, Seokjae; Lee, Sang Yeon; Hwang, Jungyeon; Park, Jucheol; Seo, Hyungtak

    2018-01-01

    Electric field-triggered Mott transition of VO2 for next-generation memory devices with sharp and fast resistance-switching response is considered to be ideal but the formation of single-phase VO2 by common deposition techniques is very challenging. Here, VOx films with a VO2-dominant phase for a Mott transition-based metal-insulator transition (MIT) switching device were successfully fabricated by the combined process of RF magnetron sputtering of V metal and subsequent O2 annealing to form. By performing various material characterizations, including scanning transmission electron microscopy-electron energy loss spectroscopy, the film is determined to have a bilayer structure consisting of a VO2-rich bottom layer acting as the Mott transition switching layer and a V2O5/V2O3 mixed top layer acting as a control layer that suppresses any stray leakage current and improves cyclic performance. This bilayer structure enables excellent electric field-triggered Mott transition-based resistive switching of Pt-VOx-Pt metal-insulator-metal devices with a set/reset current ratio reaching 200, set/reset voltage of less than 2.5 V, and very stable DC cyclic switching upto 120 cycles with a great set/reset current and voltage distribution less than 5% of standard deviation at room temperature, which are specifications applicable for neuromorphic or memory device applications. [Figure not available: see fulltext.

  7. 49 CFR 1242.67 - Switch crews; controlling operations; yard and terminal clerical; locomotive fuel; electric power...

    Science.gov (United States)

    2010-10-01

    ... 49 Transportation 9 2010-10-01 2010-10-01 false Switch crews; controlling operations; yard and terminal clerical; locomotive fuel; electric power purchased/produced for motive power; operating switches... SERVICE FOR RAILROADS 1 Operating Expenses-Transportation § 1242.67 Switch crews; controlling operations...

  8. Effect of bipolar electric fatigue on polarization switching in lead-zirconate-titanate ceramics

    Science.gov (United States)

    Zhukov, Sergey; Fedosov, Sergey; Glaum, Julia; Granzow, Torsten; Genenko, Yuri A.; von Seggern, Heinz

    2010-07-01

    From comparison of experimental results on polarization switching in fresh and electrically fatigued lead-zirconate-titanate (PZT) over a wide range of applied fields and switching times it is concluded that fatigue alters the local field distribution inside the sample due to the generation of discrete defects, such as voids and cracks. Such defects have a strong influence on the overall electric field distribution by their shape and dielectric permittivity. On this hypothesis, a new phenomenological model of polarization switching in fatigued PZT is proposed. The model assumes that the fatigued sample can be composed of different local regions which exhibit different field strengths but otherwise can be considered as unfatigued. Consequently the temporal response of a fatigued sample is assumed to be the superposition of the field-dependent temporal responses of unfatigued samples weighted by their respective volume fraction. A certain part of the volume is excluded from the overall switching process due to the domain pinning even at earlier stages of fatigue, which can be recovered by annealing. Suitability of the proposed model is demonstrated by a good correlation between experimental and calculated data for differently fatigued samples. Plausible cause of the formation of such regions is the generation of defects such as microcracks and the change in electrical properties at imperfections such as pores or voids.

  9. Reversible electrical resistance switching in GeSbTe thin films : An electrolytic approach without amorphous-crystalline phase-change

    NARCIS (Netherlands)

    Pandian, Ramanathaswamy; Kooi, Bart J.; Palasantzas, George; De Hosson, Jeff Th. M.; Wouters, DJ; Hong, S; Soss, S; Auciello, O

    2008-01-01

    Besides the well-known resistance switching originating from the amorphous-crystalline phase-change in GeSbTe thin films, we demonstrate another switching mechanism named 'polarity-dependent resistance (PDR) switching'. 'Me electrical resistance of the film switches between a low- and high-state

  10. Voltage- and current-activated metal–insulator transition in VO2-based electrical switches: a lifetime operation analysis

    Directory of Open Access Journals (Sweden)

    Aurelian Crunteanu, Julien Givernaud, Jonathan Leroy, David Mardivirin, Corinne Champeaux, Jean-Christophe Orlianges, Alain Catherinot and Pierre Blondy

    2010-01-01

    Full Text Available Vanadium dioxide is an intensively studied material that undergoes a temperature-induced metal–insulator phase transition accompanied by a large change in electrical resistivity. Electrical switches based on this material show promising properties in terms of speed and broadband operation. The exploration of the failure behavior and reliability of such devices is very important in view of their integration in practical electronic circuits. We performed systematic lifetime investigations of two-terminal switches based on the electrical activation of the metal–insulator transition in VO2 thin films. The devices were integrated in coplanar microwave waveguides (CPWs in series configuration. We detected the evolution of a 10 GHz microwave signal transmitted through the CPW, modulated by the activation of the VO2 switches in both voltage- and current-controlled modes. We demonstrated enhanced lifetime operation of current-controlled VO2-based switching (more than 260 million cycles without failure compared with the voltage-activated mode (breakdown at around 16 million activation cycles. The evolution of the electrical self-oscillations of a VO2-based switch induced in the current-operated mode is a subtle indicator of the material properties modification and can be used to monitor its behavior under various external stresses in sensor applications.

  11. Study on Power Switching Process of a Hybrid Electric Vehicle with In-Wheel Motors

    Directory of Open Access Journals (Sweden)

    Shaohua Wang

    2016-01-01

    Full Text Available Hybrid electric vehicles with in-wheel motors (IWM achieve a variety of driving modes by two power sources—the engine and the IWM. One of the critical problems that exists in such vehicle is the different transient characteristics between the engine and the IWM. Therefore, switching processes between the power sources have noteworthy impacts on vehicle dynamics and driving performance. For the particular switching process of the pure electric mode to the engine driving mode, a specific control strategy coordinating clutch torque, motor torque, and engine torque was proposed to solve drivability issues caused by inconsistent responses of different power sources during the mode transition. The specific switching process could be described as follows: the engine was started by IWM with the clutch serving as a key enabling actuator, dynamic torque compensation through IWM was implemented after engine started, and, meanwhile, engine speed was controlled to track the target speed through the closed loop PID control strategy. The bench tests results showed that the vehicle jerk caused during mode switching was reduced and fast and smooth mode switching was realized, which leads to the improvement of vehicle’s riding comfort.

  12. Electric polarization switching in an atomically thin binary rock salt structure

    Science.gov (United States)

    Martinez-Castro, Jose; Piantek, Marten; Schubert, Sonja; Persson, Mats; Serrate, David; Hirjibehedin, Cyrus F.

    2018-01-01

    Inducing and controlling electric dipoles is hindered in the ultrathin limit by the finite screening length of surface charges at metal-insulator junctions1-3, although this effect can be circumvented by specially designed interfaces4. Heterostructures of insulating materials hold great promise, as confirmed by perovskite oxide superlattices with compositional substitution to artificially break the structural inversion symmetry5-8. Bringing this concept to the ultrathin limit would substantially broaden the range of materials and functionalities that could be exploited in novel nanoscale device designs. Here, we report that non-zero electric polarization can be induced and reversed in a hysteretic manner in bilayers made of ultrathin insulators whose electric polarization cannot be switched individually. In particular, we explore the interface between ionic rock salt alkali halides such as NaCl or KBr and polar insulating Cu2N terminating bulk copper. The strong compositional asymmetry between the polar Cu2N and the vacuum gap breaks inversion symmetry in the alkali halide layer, inducing out-of-plane dipoles that are stabilized in one orientation (self-poling). The dipole orientation can be reversed by a critical electric field, producing sharp switching of the tunnel current passing through the junction.

  13. Electrical Switching of Perovskite Thin-Film Resistors

    Science.gov (United States)

    Liu, Shangqing; Wu, Juan; Ignatiev, Alex

    2010-01-01

    Electronic devices that exploit electrical switching of physical properties of thin films of perovskite materials (especially colossal magnetoresistive materials) have been invented. Unlike some related prior devices, these devices function at room temperature and do not depend on externally applied magnetic fields. Devices of this type can be designed to function as sensors (exhibiting varying electrical resistance in response to varying temperature, magnetic field, electric field, and/or mechanical pressure) and as elements of electronic memories. The underlying principle is that the application of one or more short electrical pulse(s) can induce a reversible, irreversible, or partly reversible change in the electrical, thermal, mechanical, and magnetic properties of a thin perovskite film. The energy in the pulse must be large enough to induce the desired change but not so large as to destroy the film. Depending on the requirements of a specific application, the pulse(s) can have any of a large variety of waveforms (e.g., square, triangular, or sine) and be of positive, negative, or alternating polarity. In some applications, it could be necessary to use multiple pulses to induce successive incremental physical changes. In one class of applications, electrical pulses of suitable shapes, sizes, and polarities are applied to vary the detection sensitivities of sensors. Another class of applications arises in electronic circuits in which certain resistance values are required to be variable: Incorporating the affected resistors into devices of the present type makes it possible to control their resistances electrically over wide ranges, and the lifetimes of electrically variable resistors exceed those of conventional mechanically variable resistors. Another and potentially the most important class of applications is that of resistance-based nonvolatile-memory devices, such as a resistance random access memory (RRAM) described in the immediately following article

  14. Investigation of electrically exploded large area foil for current switching

    International Nuclear Information System (INIS)

    Chernyshev, V.K.; Boyko, A.M.; Kostyukov, V.N.; Kuzyaev, A.I.; Kulagin, A.A.; Mamyshev, V.I.; Mezhevov, A.B.; Nechaev, A.I.; Petrukhin, A.A.; Protasov, M.S.; Shevtsov, V.I.; Yakubov, V.B.

    1990-01-01

    The possibility of microsecond ∼40 MA current switching from EMG into a quasiconstant inductive load by an electrically exploded foil is investigated. The copper foil of large area, S ∼ 10 4 cm 2 , was placed between thin-walled insulators into a coaxial transmission line (TL). This paper shows a conceptual device scheme. To feed a foil opening switch (FOS), a disc explosive magnetic generator (DEMG) with 20 μs current rise time was employed. An inductive coaxial load was connected to a FOS at a moment, that was close to the foil vaporization start by means of an axisymmetric explosive current commutator (ECC)

  15. Electric field controlled reversible magnetic anisotropy switching studied by spin rectification

    International Nuclear Information System (INIS)

    Zhou, Hengan; Fan, Xiaolong; Wang, Fenglong; Jiang, Changjun; Rao, Jinwei; Zhao, Xiaobing; Xue, Desheng; Gui, Y. S.; Hu, C.-M.

    2014-01-01

    In this letter, spin rectification was used to study the electric field controlled dynamic magnetic properties of the multiferroic composite which is a Co stripe with induced in-plane anisotropy deposited onto a Pb(Mg 1∕3 Nb 2∕3 )O 3 -PbTiO 3 substrate. Due to the coupling between piezoelectric and magnetoelastic effects, a reversible in-plane anisotropy switching has been realized by varying the history of the applied electric field. This merit results from the electric hysteresis of the polarization in the nonlinear piezoelectric regime, which has been proved by a butterfly type electric field dependence of the in-plane anisotropy field. Moreover, the electric field dependent effective demagnetization field and linewidth have been observed at the same time

  16. A bidirectional soft switched ultracapacitor interface circuit for hybrid electric vehicles

    Energy Technology Data Exchange (ETDEWEB)

    Farzanehfard, Hosein; Beyragh, Dawood Shekari; Adib, Ehsan [Electrical and Computer Engineering Department, Isfahan University of Technology, Isfahan 84156 (Iran)

    2008-12-15

    Ultracapacitors are used as auxiliary elements beside batteries to increase peak power capability and battery life in hybrid electric vehicles. In such a configuration, a bidirectional high efficiency converter is required as an interface between ultracapacitors and batteries. Since the voltage level of ultracapacitors and batteries are different, the interface must be able to increase or decrease the voltage level in each power flow direction while limiting the current. This paper presents a zero voltage transition (ZVT) buck-and-boost converter for ultracapacitors interface. All the switches in the proposed converter are soft switched to reduce switching losses and increase efficiency. The converter operational modes are analyzed and its performance is discussed. Finally, the experimental results from a 150 W laboratory prototype are presented which justify the theoretical analysis. (author)

  17. Active RF Pulse Compression Using An Electrically Controlled Semiconductor Switch

    Energy Technology Data Exchange (ETDEWEB)

    Guo, Jiquan; Tantawi, Sami; /SLAC

    2007-01-10

    First we review the theory of active pulse compression systems using resonant delay lines. Then we describe the design of an electrically controlled semiconductor active switch. The switch comprises an active window and an overmoded waveguide three-port network. The active window is based on a four-inch silicon wafer which has 960 PIN diodes. These are spatially combined in an overmoded waveguide. We describe the philosophy and design methodology for the three-port network and the active window. We then present the results of using this device to compress 11.4 GHz RF signals with high compression ratios. We show how the system can be used with amplifier like sources, in which one can change the phase of the source by manipulating the input to the source. We also show how the active switch can be used to compress a pulse from an oscillator like sources, which is not possible with passive pulse compression systems.

  18. Electrically tunable spatially variable switching in ferroelectric liquid crystal/water system

    Science.gov (United States)

    Choudhary, A.; Coondoo, I.; Prakash, J.; Sreenivas, K.; Biradar, A. M.

    2009-04-01

    An unusual switching phenomenon in the region outside conducting patterned area in ferroelectric liquid crystal (FLC) containing about 1-2 wt % of water has been observed. The presence of water in the studied heterogeneous system was confirmed by Fourier transform infrared spectroscopy. The observed optical studies have been emphasized on the "spatially variable switching" phenomenon of the molecules in the nonconducting region of the cell. The observed phenomenon is due to diffusion of water between the smectic layers of the FLC and the interaction of the curved electric field lines with the FLC molecules in the nonconducting region.

  19. Electric field controlled reversible magnetic anisotropy switching studied by spin rectification

    Energy Technology Data Exchange (ETDEWEB)

    Zhou, Hengan; Fan, Xiaolong, E-mail: fanxiaolong@lzu.edu.cn; Wang, Fenglong; Jiang, Changjun; Rao, Jinwei; Zhao, Xiaobing; Xue, Desheng [Key Laboratory for Magnetism and Magnetic Materials of Ministry of Education, Lanzhou University, Lanzhou 730000 (China); Gui, Y. S.; Hu, C.-M. [Department of Physics and Astronomy, University of Manitoba, Winnipeg, Manitoba R3T 2N2 (Canada)

    2014-03-10

    In this letter, spin rectification was used to study the electric field controlled dynamic magnetic properties of the multiferroic composite which is a Co stripe with induced in-plane anisotropy deposited onto a Pb(Mg{sub 1∕3}Nb{sub 2∕3})O{sub 3}-PbTiO{sub 3} substrate. Due to the coupling between piezoelectric and magnetoelastic effects, a reversible in-plane anisotropy switching has been realized by varying the history of the applied electric field. This merit results from the electric hysteresis of the polarization in the nonlinear piezoelectric regime, which has been proved by a butterfly type electric field dependence of the in-plane anisotropy field. Moreover, the electric field dependent effective demagnetization field and linewidth have been observed at the same time.

  20. Behavioral aspects of regulation: A discussion on switching and demand response in Turkish electricity market

    International Nuclear Information System (INIS)

    Sirin, Selahattin Murat; Gonul, Mustafa Sinan

    2016-01-01

    Electricity sector has been transformed from state-owned monopolistic utilities to competitive markets with an aim to promote incentives for improving efficiency, reducing costs and increasing service quality to customers. One of the cardinal assumptions of the liberalized and competitive electricity markets is the rational actor, and decision-makers are assumed to make the best decisions that maximize their utility. However, a vast literature on behavioral economics has shown the weakness of economic theory in explaining and predicting individuals’ decision-making behavior. This issue is quite important for competition in electricity markets in which consumers’ preferences have a significant role. Despite its importance, this issue has almost been neglected in Turkey, which has taken major steps in electricity sector restructuring. Therefore, this paper aims to examine switching and demand response behavior in Turkish electricity market by using multiple correspondence and panel data analysis, and findings are discussed in light of the neoclassical and behavioral economics literature. Analyses’ results show that consumers’ switching and demand response behavior is consistent with the neoclassical literature to some extent; however, behavioral factors are also affecting consumers’ decisions. Furthermore, there are systemic problems that hinder effective functioning of the electricity market and restrict competition. - Highlights: • Behavioral economics can provide insights for consumer’ decisions. • Switching and demand response behavior is examined by econometric methods. • Results is consistent with the neoclassical literature to some extent • However, behavioral factors are also affecting consumers’ decisions.

  1. Development of High-Speed Switched Reluctance Motor for Electric Power Tools

    Science.gov (United States)

    Nakamura, Kenji; Kumasaka, Yuya; Ichinokura, Osamu

    2017-10-01

    This paper presents design and experimental evaluation of a switched reluctance (SR) motor used for electric power tools. First, characteristics of a previous designed 6/4-pole SR motor is shown and compared to a permanent magnet (PM) motor used in present electric power tools. Next, to further improve characteristics, a 12/8-pole SR motor is designed and evaluated in experiment. It is proved that the performance of the prototype 12/8-pole SR motor is almost comparable or superior to the present PM motor.

  2. The Control of Switched Reluctance Motor in Electric Vehicle

    Directory of Open Access Journals (Sweden)

    Zheng Liu

    2014-05-01

    Full Text Available The control of SRM was discussed: current chopping control, angle position control. This paper presents an inverter circuit and a fuzzy sliding mode control method to minimize the torque fluctuation and noise of the SRM. Based on the experimental results, Using the inverter circuit and fuzzy sliding mode control method can effectively minimize the torque fluctuation and noise of the SRM, For the switched reluctance motor applications in electric vehicles to provide a theoretical basis.

  3. Electrically tunable sign of capacitance in planar W-doped vanadium dioxide micro-switches

    Directory of Open Access Journals (Sweden)

    Mohammed Soltani, Mohamed Chaker and Joelle Margot

    2011-01-01

    Full Text Available Negative capacitance (NC in a planar W-doped VO2 micro-switch was observed at room temperature in the low-frequency range 1 kHz–10 MHz. The capacitance changed from positive to negative values as the W-doped VO2 active layer switched from semiconducting to metallic state under applied voltage. In addition, a capacitance–voltage hysteresis was observed as the applied voltage was cycled from −35 to 35 V. These observations suggest that NC results from the increase of the electrically induced conductivity in the active layer. This NC phenomenon could be exploited in advanced multifunctional devices including ultrafast switches, field-effect transistors and memcapacitive systems.

  4. Availability of the electric drive systems containing flux switching permanent magnet machines

    NARCIS (Netherlands)

    Wang, L.; Sfakianakis, G.; Paulides, J.J.H.; Lomonova, E.A.

    2016-01-01

    This paper investigates how to improve availability of an electrical drive containing a 3-phase 12/10 (12 stator tooth/10 rotor poles) flux switching permanent magnet machine. In this respect, Field-Oriented Control and Space-Vector Pulse-Width-Modulation strategies will be applied with 3-phase

  5. Electric-field switching of two-dimensional van der Waals magnets

    Science.gov (United States)

    Jiang, Shengwei; Shan, Jie; Mak, Kin Fai

    2018-05-01

    Controlling magnetism by purely electrical means is a key challenge to better information technology1. A variety of material systems, including ferromagnetic (FM) metals2-4, FM semiconductors5, multiferroics6-8 and magnetoelectric (ME) materials9,10, have been explored for the electric-field control of magnetism. The recent discovery of two-dimensional (2D) van der Waals magnets11,12 has opened a new door for the electrical control of magnetism at the nanometre scale through a van der Waals heterostructure device platform13. Here we demonstrate the control of magnetism in bilayer CrI3, an antiferromagnetic (AFM) semiconductor in its ground state12, by the application of small gate voltages in field-effect devices and the detection of magnetization using magnetic circular dichroism (MCD) microscopy. The applied electric field creates an interlayer potential difference, which results in a large linear ME effect, whose sign depends on the interlayer AFM order. We also achieve a complete and reversible electrical switching between the interlayer AFM and FM states in the vicinity of the interlayer spin-flip transition. The effect originates from the electric-field dependence of the interlayer exchange bias.

  6. Electromechanical magnetization switching

    Energy Technology Data Exchange (ETDEWEB)

    Chudnovsky, Eugene M. [Department of Physics and Astronomy, Lehman College and Graduate School, The City University of New York, 250 Bedford Park Boulevard West, Bronx, New York 10468-1589 (United States); Jaafar, Reem [Department of Mathematics, Engineering and Computer Science, LaGuardia Community College, The City University of New York, 31-10 Thomson Avenue, Long Island City, New York 11101 (United States)

    2015-03-14

    We show that the magnetization of a torsional oscillator that, in addition to the magnetic moment also possesses an electrical polarization, can be switched by the electric field that ignites mechanical oscillations at the frequency comparable to the frequency of the ferromagnetic resonance. The 180° switching arises from the spin-rotation coupling and is not prohibited by the different symmetry of the magnetic moment and the electric field as in the case of a stationary magnet. Analytical equations describing the system have been derived and investigated numerically. Phase diagrams showing the range of parameters required for the switching have been obtained.

  7. Electromechanical magnetization switching

    International Nuclear Information System (INIS)

    Chudnovsky, Eugene M.; Jaafar, Reem

    2015-01-01

    We show that the magnetization of a torsional oscillator that, in addition to the magnetic moment also possesses an electrical polarization, can be switched by the electric field that ignites mechanical oscillations at the frequency comparable to the frequency of the ferromagnetic resonance. The 180° switching arises from the spin-rotation coupling and is not prohibited by the different symmetry of the magnetic moment and the electric field as in the case of a stationary magnet. Analytical equations describing the system have been derived and investigated numerically. Phase diagrams showing the range of parameters required for the switching have been obtained

  8. An ultrafast programmable electrical tester for enabling time-resolved, sub-nanosecond switching dynamics and programming of nanoscale memory devices

    Science.gov (United States)

    Shukla, Krishna Dayal; Saxena, Nishant; Manivannan, Anbarasu

    2017-12-01

    Recent advancements in commercialization of high-speed non-volatile electronic memories including phase change memory (PCM) have shown potential not only for advanced data storage but also for novel computing concepts. However, an in-depth understanding on ultrafast electrical switching dynamics is a key challenge for defining the ultimate speed of nanoscale memory devices that demands for an unconventional electrical setup, specifically capable of handling extremely fast electrical pulses. In the present work, an ultrafast programmable electrical tester (PET) setup has been developed exceptionally for unravelling time-resolved electrical switching dynamics and programming characteristics of nanoscale memory devices at the picosecond (ps) time scale. This setup consists of novel high-frequency contact-boards carefully designed to capture extremely fast switching transient characteristics within 200 ± 25 ps using time-resolved current-voltage measurements. All the instruments in the system are synchronized using LabVIEW, which helps to achieve various programming characteristics such as voltage-dependent transient parameters, read/write operations, and endurance test of memory devices systematically using short voltage pulses having pulse parameters varied from 1 ns rise/fall time and 1.5 ns pulse width (full width half maximum). Furthermore, the setup has successfully demonstrated strikingly one order faster switching characteristics of Ag5In5Sb60Te30 (AIST) PCM devices within 250 ps. Hence, this novel electrical setup would be immensely helpful for realizing the ultimate speed limits of various high-speed memory technologies for future computing.

  9. Electromagnetic Analysis and Design of Switched Reluctance Double-Rotor Machine for Hybrid Electric Vehicles

    Directory of Open Access Journals (Sweden)

    Shouliang Han

    2014-10-01

    Full Text Available The double-rotor machine is a kind of multiple input and output electromechanical energy transducer with two electrical ports and two mechanical ports, which is an ideal transmission system for hybrid electric vehicles and has a series of advantages such as integration of power and energy, high efficiency and compaction. In this paper, a switched reluctance double-rotor machine (SRDRM is proposed for hybrid electric vehicles, while no conductor or PM in the middle rotor. This machine not only inherits the merits of switched reluctance machine, such as simple salient rotor structure, high reliability and wide speed range, but also can avoid the outer rotor’s cooling problem effectively. By using an equivalent magnetic circuit model, the function of middle rotor yoke is analyzed. Electromagnetic analyses of the SRDRM are performed with analytical calculations and 2-D finite element methods, including the effects of main parameters on performance. Finally, a 4.4 kW prototype machine is designed and manufactured, and the tests are performed, which validate the proposed design method.

  10. Electric Drive Discrete Control System with Automatic Switching-On Reserve for Autonomous Settlement

    Directory of Open Access Journals (Sweden)

    Tsytovich L.I.

    2015-08-01

    Full Text Available The paper aims at developing of control the water supply system’s electric drives for autonomous settlement. The system provides automatic switching to a reserve control channel at refusal of any of the functional elements of the working regulation channel. Usually, such systems have a test signal generator and analyzer to system response to their impact. This result to an increase in the structural redundancy of the system, increase its cost and increase the requirements for the staff qualification. A specific feature of the system is its ability to self-diagnosis of catastrophic malfunctions of scheme’s components and an automatic switching-on the reserve control channels, without applying any test signals to the whole complex of electrical equipment. Multi-zone integrating regulator with frequency-pulse-width modulation realizes this technical solution. Control system structure and signals timing diagrams are presented. The construction principle of adaptive interval-code synchronization device with improved noise stability to control the voltage regulators serving for smooth start-up of asynchronous motors of water pumps is considered as well. Such solution allowing increase noise stability and reliability work of the system in conditions of limited power electrical networks, which is characteristic for the autonomous settlements. The article may be of interest to specialists in the field of power electronics and information electronics, electric drives and process automation.

  11. Electrically switched ion exchange

    Energy Technology Data Exchange (ETDEWEB)

    Lilga, M.A. [Pacific Northwest National Lab., Richland, WA (United States); Schwartz, D.T.; Genders, D.

    1997-10-01

    A variety of waste types containing radioactive {sup 137}Cs are found throughout the DOE complex. These waste types include water in reactor cooling basins, radioactive high-level waste (HLW) in underground storage tanks, and groundwater. Safety and regulatory requirements and economics require the removal of radiocesium before these wastes can be permanently disposed of. Electrically Switched Ion Exchange (ESIX) is an approach for radioactive cesium separation that combines IX and electrochemistry to provide a selective, reversible, and economic separation method that also produces little or no secondary waste. In the ESIX process, an electroactive IX film is deposited electrochemically onto a high-surface area electrode, and ion uptake and elution are controlled directly by modulating the potential of the film. For cesium, the electroactive films under investigation are ferrocyanides, which are well known to have high selectivities for cesium in concentrated sodium solutions. When a cathode potential is applied to the film, Fe{sup +3} is reduced to the Fe{sup +2} state, and a cation must be intercalated into the film to maintain charge neutrality (i.e., Cs{sup +} is loaded). Conversely, if an anodic potential is applied, a cation must be released from the film (i.e., Cs{sup +} is unloaded). Therefore, to load the film with cesium, the film is simply reduced; to unload cesium, the film is oxidized.

  12. A Sepic Type Switched Mode Power Supply System For Battery Charging In An Electric Tricycle Auto-Rickshaw

    Directory of Open Access Journals (Sweden)

    Kureve

    2017-08-01

    Full Text Available This paper analyzes the plug-in electric tricycle Auto rickshaw battery charging system using a non-isolated DC-DC SEPIC converter which operates as a switched mode power supply SMPS. The control of dc voltage output is by varying the gating pulses duty cycle of the switch in the dc-dc converter using PID controller based PWM technique. The 60 V 30 A DC-DC SEPIC converter is designed to provide non-inverting voltage buck from the rectified AC mains for charging deep cycle battery bank in an electric auto rickshaw. The charger system is implemented using MATLABSimulink.

  13. Effect of thermal insulation on the electrical characteristics of NbOx threshold switches

    Science.gov (United States)

    Wang, Ziwen; Kumar, Suhas; Wong, H.-S. Philip; Nishi, Yoshio

    2018-02-01

    Threshold switches based on niobium oxide (NbOx) are promising candidates as bidirectional selector devices in crossbar memory arrays and building blocks for neuromorphic computing. Here, it is experimentally demonstrated that the electrical characteristics of NbOx threshold switches can be tuned by engineering the thermal insulation. Increasing the thermal insulation by ˜10× is shown to produce ˜7× reduction in threshold current and ˜45% reduction in threshold voltage. The reduced threshold voltage leads to ˜5× reduction in half-selection leakage, which highlights the effectiveness of reducing half-selection leakage of NbOx selectors by engineering the thermal insulation. A thermal feedback model based on Poole-Frenkel conduction in NbOx can explain the experimental results very well, which also serves as a piece of strong evidence supporting the validity of the Poole-Frenkel based mechanism in NbOx threshold switches.

  14. Insulating oil, electrical for transformers and switches : a national standard of Canada

    International Nuclear Information System (INIS)

    Paniri, S.; Burford, G.; Martin, A.; Adragna, M.

    1997-01-01

    Standard specifications for insulating oil used in power transformers, instrument transformers, bushings, bulk oil circuit breakers, oil circuit reclosers, and switches were provided. The specifications are divided into Class A and Class B depending on the requirement for kinematic viscosity at -40 degrees C. A Class S oil is also introduced for oil circuit breakers. The standards were prepared by the Technical Committee on Transformer and Switch Oils under the jurisdiction of the Steering Committee on Electrical Engineering, and has been formally approved by these committees. It has been also approved as a National Standard of Canada by the Standards Council of Canada. The document provides a list of reference publications, describes the samples and test procedures, properties and delivery requirements. 1 tab

  15. A vector autoregressive model for electricity prices subject to long memory and regime switching

    International Nuclear Information System (INIS)

    Haldrup, Niels; Nielsen, Frank S.; Nielsen, Morten Oerregaard

    2010-01-01

    A regime dependent VAR model is suggested that allows long memory (fractional integration) in each of the observed regime states as well as the possibility of fractional cointegration. The model is motivated by the dynamics of electricity prices where the transmission of power is subject to occasional congestion periods. For a system of bilateral prices non-congestion means that electricity prices are identical whereas congestion makes prices depart. Hence, the joint price dynamics implies switching between a univariate price process under non-congestion and a bivariate price process under congestion. At the same time, it is an empirical regularity that electricity prices tend to show a high degree of long memory, and thus that prices may be fractionally cointegrated. Analysis of Nord Pool data shows that even though the prices are identical under non-congestion, the prices are not, in general, fractionally cointegrated in the congestion state. Hence, in most cases price convergence is a property following from regime switching rather than a conventional error correction mechanism. Finally, the suggested model is shown to deliver forecasts that are more precise compared to competing models. (author)

  16. Battery switch for downhole tools

    Science.gov (United States)

    Boling, Brian E.

    2010-02-23

    An electrical circuit for a downhole tool may include a battery, a load electrically connected to the battery, and at least one switch electrically connected in series with the battery and to the load. The at least one switch may be configured to close when a tool temperature exceeds a selected temperature.

  17. A Soft-Switching Inverter for High-Temperature Advanced Hybrid Electric Vehicle Traction Motor Drives

    Energy Technology Data Exchange (ETDEWEB)

    Lai, Jason [Virginia Polytechnic Inst. and State Univ. (Virginia Tech), Blacksburg, VA (United States); Yu, Wensong [Virginia Polytechnic Inst. and State Univ. (Virginia Tech), Blacksburg, VA (United States); Sun, Pengwei [Virginia Polytechnic Inst. and State Univ. (Virginia Tech), Blacksburg, VA (United States); Leslie, Scott [Powerex, Inc., Harrison, OH (United States); Prusia, Duane [Powerex, Inc., Harrison, OH (United States); Arnet, Beat [Azure Dynamics, Oak Park, MI (United States); Smith, Chris [Azure Dynamics, Oak Park, MI (United States); Cogan, Art [Azure Dynamics, Oak Park, MI (United States)

    2012-03-31

    The state-of-the-art hybrid electric vehicles (HEVs) require the inverter cooling system to have a separate loop to avoid power semiconductor junction over temperatures because the engine coolant temperature of 105°C does not allow for much temperature rise in silicon devices. The proposed work is to develop an advanced soft-switching inverter that will eliminate the device switching loss and cut down the power loss so that the inverter can operate at high-temperature conditions while operating at high switching frequencies with small current ripple in low inductance based permanent magnet motors. The proposed tasks also include high-temperature packaging and thermal modeling and simulation to ensure the packaged module can operate at the desired temperature. The developed module will be integrated with the motor and vehicle controller for dynamometer and in-vehicle testing to prove its superiority. This report will describe the detailed technical design of the soft-switching inverters and their test results. The experiments were conducted both in module level for the module conduction and switching characteristics and in inverter level for its efficiency under inductive and dynamometer load conditions. The performance will be compared with the DOE original specification.

  18. Coexistence of electric field controlled ferromagnetism and resistive switching for TiO{sub 2} film at room temperature

    Energy Technology Data Exchange (ETDEWEB)

    Ren, Shaoqing; Qin, Hongwei; Bu, Jianpei; Zhu, Gengchang; Xie, Jihao; Hu, Jifan, E-mail: hujf@sdu.edu.cn, E-mail: hu-jf@vip.163.com [School of Physics, State Key Laboratory for Crystal Materials, Shandong University, Jinan 250100 (China)

    2015-08-10

    The Ag/TiO{sub 2}/Nb:SrTiO{sub 3}/Ag device exhibits the coexistence of electric field controlled ferromagnetism and resistive switching at room temperature. The bipolar resistive switching in Ag/TiO{sub 2}/Nb:SrTiO{sub 3}/Ag device may be dominated by the modulation of Schottky-like barrier with the electron injection-trapped/detrapped process at the interface of TiO{sub 2}/Nb:SrTiO{sub 3}. We suggest that the electric field-induced magnetization modulation originates mainly from the creation/annihilation of lots of oxygen vacancies in TiO{sub 2}.

  19. Electrically switched cesium ion exchange

    International Nuclear Information System (INIS)

    Lilga, M.A.; Orth, R.J.; Sukamto, J.P.H.; Schwartz, D.T.; Haight, S.M.; Genders, J.D.

    1997-04-01

    Electrically Switched Ion Exchange (ESIX) is a separation technology being developed as an alternative to conventional ion exchange for removing radionuclides from high-level waste. The ESIX technology, which combines ion exchange and electrochemistry, is geared toward producing electroactive films that are highly selective, regenerable, and long lasting. During the process, ion uptake and elution are controlled directly by modulating the potential of an ion exchange film that has been electrochemically deposited onto a high surface area electrode. This method adds little sodium to the waste stream and minimizes the secondary wastes associated with traditional ion exchange techniques. Development of the ESIX process is well underway for cesium removal using ferrocyanides as the electroactive films. Films having selectivity for perrhenate (a pertechnetate surrogate) over nitrate also have been deposited and tested. A case study for the KE Basin on the Hanford Site was conducted based on the results of the development testing. Engineering design baseline parameters for film deposition, film regeneration, cesium loading, and cesium elution were used for developing a conceptual system. Order of magnitude cost estimates were developed to compare with conventional ion exchange. This case study demonstrated that KE Basin wastewater could be processed continuously with minimal secondary waste and reduced associated disposal costs, as well as lower capital and labor expenditures

  20. Marginal abatement cost curve for nitrogen oxides incorporating controls, renewable electricity, energy efficiency, and fuel switching.

    Science.gov (United States)

    Loughlin, Daniel H; Macpherson, Alexander J; Kaufman, Katherine R; Keaveny, Brian N

    2017-10-01

    A marginal abatement cost curve (MACC) traces out the relationship between the quantity of pollution abated and the marginal cost of abating each additional unit. In the context of air quality management, MACCs are typically developed by sorting control technologies by their relative cost-effectiveness. Other potentially important abatement measures such as renewable electricity, energy efficiency, and fuel switching (RE/EE/FS) are often not incorporated into MACCs, as it is difficult to quantify their costs and abatement potential. In this paper, a U.S. energy system model is used to develop a MACC for nitrogen oxides (NO x ) that incorporates both traditional controls and these additional measures. The MACC is decomposed by sector, and the relative cost-effectiveness of RE/EE/FS and traditional controls are compared. RE/EE/FS are shown to have the potential to increase emission reductions beyond what is possible when applying traditional controls alone. Furthermore, a portion of RE/EE/FS appear to be cost-competitive with traditional controls. Renewable electricity, energy efficiency, and fuel switching can be cost-competitive with traditional air pollutant controls for abating air pollutant emissions. The application of renewable electricity, energy efficiency, and fuel switching is also shown to have the potential to increase emission reductions beyond what is possible when applying traditional controls alone.

  1. Electrically-controlled nonlinear switching and multi-level storage characteristics in WOx film-based memory cells

    Science.gov (United States)

    Duan, W. J.; Wang, J. B.; Zhong, X. L.

    2018-05-01

    Resistive switching random access memory (RRAM) is considered as a promising candidate for the next generation memory due to its scalability, high integration density and non-volatile storage characteristics. Here, the multiple electrical characteristics in Pt/WOx/Pt cells are investigated. Both of the nonlinear switching and multi-level storage can be achieved by setting different compliance current in the same cell. The correlations among the current, time and temperature are analyzed by using contours and 3D surfaces. The switching mechanism is explained in terms of the formation and rupture of conductive filament which is related to oxygen vacancies. The experimental results show that the non-stoichiometric WOx film-based device offers a feasible way for the applications of oxide-based RRAMs.

  2. Nanomaterials-Enhanced Electrically Switched Ion Exchange Process for Water Treatment

    International Nuclear Information System (INIS)

    Lin, Yuehe; Choi, Daiwon; Wang, Jun; Bontha, Jagannadha R.

    2009-01-01

    The objective of our work is to develop an electrically switched ion exchange (ESIX) system based on conducting polymer/carbon nanotube (CNT) nanocomposites as a new and cost-effective approach for removal of radioactive cesium, chromate, and perchlorate from contaminated groundwater. The ESIX technology combines ion exchange and electrochemistry to provide a selective, reversible method for the removal of target species from wastewater. In this technique, an electroactive ion exchange layer is deposited on a conducting substrate, and ion uptake and elution are controlled directly by modulation of the potential of the layer. ESIX offers the advantages of highly-efficient use of electrical energy combined with no secondary waste generation. Recently, we have improved upon the ESIX process by modifying the conducting substrate with carbon nanotubes prior to the deposition of the electroactive ion exchanger. The nanomaterial-based electroactive ion exchange technology will remove cesium-137, chromate, and perchlorate rapidly from wastewater. The high porosity and high surface area of the electroactive ion exchange nanocomposites results in high loading capacity and minimize interferences for non-target species. Since the ion adsorption/desorption is controlled electrically without generating a secondary waste, this electrically active ion exchange process is a green process technology that will greatly reduce operating costs

  3. Electrical switching of antiferromagnets via strongly spin-orbit coupled materials

    Science.gov (United States)

    Li, Xi-Lai; Duan, Xiaopeng; Semenov, Yuriy G.; Kim, Ki Wook

    2017-01-01

    Electrically controlled ultra-fast switching of an antiferromagnet (AFM) is shown to be realizable by interfacing it with a material of strong spin-orbit coupling. The proximity interaction between the sublattice magnetic moments of a layered AFM and the spin-polarized free electrons at the interface offers an efficient way to manipulate antiferromagnetic states. A quantitative analysis, using the combination with a topological insulator as an example, demonstrates highly reliable 90° and 180° rotations of AFM magnetic states under two different mechanisms of effective torque generation at the interface. The estimated switching speed and energy requirement are in the ps and aJ ranges, respectively, which are about two-three orders of magnitude better than the ferromagnetic counterparts. The observed differences in the magnetization dynamics may explain the disparate characteristic responses. Unlike the usual precessional/chiral motions in the ferromagnets, those of the AFMs can essentially be described as a damped oscillator with a more direct path. The impact of random thermal fluctuations is also examined.

  4. Modernization of the Electric Power Systems (transformers, rods and switches) in the Laguna Verde Nuclear Power Plant (Mexico)

    International Nuclear Information System (INIS)

    Gonzalez Solarzano, J. J.; Gabaldon Martin, M. A.; Pallisa Nunez, J.; Florez Ordeonez, A.; Fernandez Corbeira, A.; Prieto Diez, I.

    2010-01-01

    Description of the changes made in the Electric Power Systems as a part of the power increase project in the Laguna Verde Nuclear Power Plant (Mexico). The main electrical changes to make, besides the turbo group, are the main generation transformers, the isolated rods and the generation switch.

  5. Field-Controlled Electrical Switch with Liquid Metal.

    Science.gov (United States)

    Wissman, James; Dickey, Michael D; Majidi, Carmel

    2017-12-01

    When immersed in an electrolyte, droplets of Ga-based liquid metal (LM) alloy can be manipulated in ways not possible with conventional electrocapillarity or electrowetting. This study demonstrates how LM electrochemistry can be exploited to coalesce and separate droplets under moderate voltages of ~1-10 V. This novel approach to droplet interaction can be explained with a theory that accounts for oxidation and reduction as well as fluidic instabilities. Based on simulations and experimental analysis, this study finds that droplet separation is governed by a unique limit-point instability that arises from gradients in bipolar electrochemical reactions that lead to gradients in interfacial tension. The LM coalescence and separation are used to create a field-programmable electrical switch. As with conventional relays or flip-flop latch circuits, the system can transition between bistable (separated or coalesced) states, making it useful for memory storage, logic, and shape-programmable circuitry using entirely liquids instead of solid-state materials.

  6. Ultra-low switching energy and scaling in electric-field-controlled nanoscale magnetic tunnel junctions with high resistance-area product

    Energy Technology Data Exchange (ETDEWEB)

    Grezes, C.; Alzate, J. G.; Cai, X.; Wang, K. L. [Department of Electrical Engineering, University of California, Los Angeles, California 90095 (United States); Ebrahimi, F.; Khalili Amiri, P. [Department of Electrical Engineering, University of California, Los Angeles, California 90095 (United States); Inston, Inc., Los Angeles, California 90024 (United States); Katine, J. A. [HGST, Inc., San Jose, California 95135 (United States); Langer, J.; Ocker, B. [Singulus Technologies AG, Kahl am Main 63796 (Germany)

    2016-01-04

    We report electric-field-induced switching with write energies down to 6 fJ/bit for switching times of 0.5 ns, in nanoscale perpendicular magnetic tunnel junctions (MTJs) with high resistance-area product and diameters down to 50 nm. The ultra-low switching energy is made possible by a thick MgO barrier that ensures negligible spin-transfer torque contributions, along with a reduction of the Ohmic dissipation. We find that the switching voltage and time are insensitive to the junction diameter for high-resistance MTJs, a result accounted for by a macrospin model of purely voltage-induced switching. The measured performance enables integration with same-size CMOS transistors in compact memory and logic integrated circuits.

  7. Short Term Electric Production Technology Switching Under Carbon Cap and Trade

    Directory of Open Access Journals (Sweden)

    Donald F. Larson

    2012-10-01

    Full Text Available This study examines fuel switching in electricity production following the introduction of the European Union’s Emissions Trading System (EU ETS for greenhouse gas emissions. A short-run restricted cost equation is estimated with carbon permits, high-carbon fuels, and low carbon fuels as variable inputs. Shadow values and substitution elasticities for carbon-free energy resources from nuclear, hydroelectric and renewable sources are imputed from the cost equation. The empirical analysis examines 12 European countries using monthly data on fuel use, prices, and electricity generation during the first phase of the European Emissions Trading System. Despite low emission permit prices, this study finds statistically significant substitution between fossil fuels and carbon free sources of energy for electric power production. Significant substitution between fossil fuels and nuclear energy also was found. Still, while 18 of the 20 substitution elasticities are statistically significant, they are all less than unity, consistent with limited substitution. Overall, these results suggest that prices for carbon emission permits relative to prices for carbon and carbon free sources of energy do matter but that electric power producers have limited operational flexibility in the short-run to satisfy greenhouse gas emission limits.

  8. A Vector Autoregressive Model for Electricity Prices Subject to Long Memory and Regime Switching

    DEFF Research Database (Denmark)

    Haldrup, Niels; Nielsen, Frank; Nielsen, Morten Ørregaard

    2007-01-01

    A regime dependent VAR model is suggested that allows long memory (fractional integration) in each of the regime states as well as the possibility of fractional cointegra- tion. The model is relevant in describing the price dynamics of electricity prices where the transmission of power is subject...... to occasional congestion periods. For a system of bilat- eral prices non-congestion means that electricity prices are identical whereas congestion makes prices depart. Hence, the joint price dynamics implies switching between essen- tially a univariate price process under non-congestion and a bivariate price...

  9. Optically triggered high voltage switch network and method for switching a high voltage

    Science.gov (United States)

    El-Sharkawi, Mohamed A.; Andexler, George; Silberkleit, Lee I.

    1993-01-19

    An optically triggered solid state switch and method for switching a high voltage electrical current. A plurality of solid state switches (350) are connected in series for controlling electrical current flow between a compensation capacitor (112) and ground in a reactive power compensator (50, 50') that monitors the voltage and current flowing through each of three distribution lines (52a, 52b and 52c), which are supplying three-phase power to one or more inductive loads. An optical transmitter (100) controlled by the reactive power compensation system produces light pulses that are conveyed over optical fibers (102) to a switch driver (110') that includes a plurality of series connected optical triger circuits (288). Each of the optical trigger circuits controls a pair of the solid state switches and includes a plurality of series connected resistors (294, 326, 330, and 334) that equalize or balance the potential across the plurality of trigger circuits. The trigger circuits are connected to one of the distribution lines through a trigger capacitor (340). In each switch driver, the light signals activate a phototransistor (300) so that an electrical current flows from one of the energy reservoir capacitors through a pulse transformer (306) in the trigger circuit, producing gate signals that turn on the pair of serially connected solid state switches (350).

  10. Optically triggered high voltage switch network and method for switching a high voltage

    Energy Technology Data Exchange (ETDEWEB)

    El-Sharkawi, Mohamed A. (Renton, WA); Andexler, George (Everett, WA); Silberkleit, Lee I. (Mountlake Terrace, WA)

    1993-01-19

    An optically triggered solid state switch and method for switching a high voltage electrical current. A plurality of solid state switches (350) are connected in series for controlling electrical current flow between a compensation capacitor (112) and ground in a reactive power compensator (50, 50') that monitors the voltage and current flowing through each of three distribution lines (52a, 52b and 52c), which are supplying three-phase power to one or more inductive loads. An optical transmitter (100) controlled by the reactive power compensation system produces light pulses that are conveyed over optical fibers (102) to a switch driver (110') that includes a plurality of series connected optical triger circuits (288). Each of the optical trigger circuits controls a pair of the solid state switches and includes a plurality of series connected resistors (294, 326, 330, and 334) that equalize or balance the potential across the plurality of trigger circuits. The trigger circuits are connected to one of the distribution lines through a trigger capacitor (340). In each switch driver, the light signals activate a phototransistor (300) so that an electrical current flows from one of the energy reservoir capacitors through a pulse transformer (306) in the trigger circuit, producing gate signals that turn on the pair of serially connected solid state switches (350).

  11. The gradual nature of threshold switching

    International Nuclear Information System (INIS)

    Wimmer, M; Salinga, M

    2014-01-01

    The recent commercialization of electronic memories based on phase change materials proved the usability of this peculiar family of materials for application purposes. More advanced data storage and computing concepts, however, demand a deeper understanding especially of the electrical properties of the amorphous phase and the switching behaviour. In this work, we investigate the temporal evolution of the current through the amorphous state of the prototypical phase change material, Ge 2 Sb 2 Te 5 , under constant voltage. A custom-made electrical tester allows the measurement of delay times over five orders of magnitude, as well as the transient states of electrical excitation prior to the actual threshold switching. We recognize a continuous current increase over time prior to the actual threshold-switching event to be a good measure for the electrical excitation. A clear correlation between a significant rise in pre-switching-current and the later occurrence of threshold switching can be observed. This way, we found experimental evidence for the existence of an absolute minimum for the threshold voltage (or electric field respectively) holding also for time scales far beyond the measurement range. (paper)

  12. The loyalty of industrial clients of gas and electricity: the value rol and switching barriers

    International Nuclear Information System (INIS)

    Garcia Acebron, C.; Vazquez Castelles, R.; Iglesias Arguelles, V.

    2007-01-01

    This paper deals with perceived value and loyalty in a B2 B environment taking account switching barriers. The Spanish energy market has been newly liberalized and many companies offer supply services of natural gas and electricity. The research examines the casual relations between perceived value and two dimensions of loyalty: repurchase intentions and price tolerance. Although our results indicate that suppliers achieve better repurchase intentions by providing value to their customers, they also show that this is insufficient when the aim is to increase customer price tolerance. In this case another moderating variable must be included: the switching barriers. (Author)

  13. High voltage switches having one or more floating conductor layers

    Science.gov (United States)

    Werne, Roger W.; Sampayan, Stephen; Harris, John Richardson

    2015-11-24

    This patent document discloses high voltage switches that include one or more electrically floating conductor layers that are isolated from one another in the dielectric medium between the top and bottom switch electrodes. The presence of the one or more electrically floating conductor layers between the top and bottom switch electrodes allow the dielectric medium between the top and bottom switch electrodes to exhibit a higher breakdown voltage than the breakdown voltage when the one or more electrically floating conductor layers are not present between the top and bottom switch electrodes. This increased breakdown voltage in the presence of one or more electrically floating conductor layers in a dielectric medium enables the switch to supply a higher voltage for various high voltage circuits and electric systems.

  14. Insulating oil, electrical for transformers and switches : a national standard of Canada; 5. ed.

    Energy Technology Data Exchange (ETDEWEB)

    Paniri, S; Burford, G; Martin, A; Adragna, M [eds.

    1997-09-01

    Standard specifications for insulating oil used in power transformers, instrument transformers, bushings, bulk oil circuit breakers, oil circuit reclosers, and switches were provided. The specifications are divided into Class A and Class B depending on the requirement for kinematic viscosity at -40 degrees C. A Class S oil is also introduced for oil circuit breakers. The standards were prepared by the Technical Committee on Transformer and Switch Oils under the jurisdiction of the Steering Committee on Electrical Engineering, and has been formally approved by these committees. It has been also approved as a National Standard of Canada by the Standards Council of Canada. The document provides a list of reference publications, describes the samples and test procedures, properties and delivery requirements. 1 tab.

  15. Directional Congestion and Regime Switching in a Long Memory Model for Electricity Prices

    DEFF Research Database (Denmark)

    Haldrup, Niels; Nielsen, Morten Ø.

    The functioning of electricity markets has experienced increasing complexityas a result of deregulation in recent years. Consequently this affects the multilateral price behaviour across regions with physical exchange of power. It has been documented elsewhere that features such aslong memory...... and regime switching reflecting congestion and non-congestion periods are empirically relevant and hence are features that need to be taken into account when modeling price behavior. In the present paper we further elaborate on the co-existence of long memory and regime switches by focusing on the effect...... that the direction of possible congestion episodes has on the price dynamics. Under non-congestion prices are identical. The direction of possible congestion is identified by the region with excess demand of power through the sign of price differences and hence three different states can be considered: Non...

  16. Dipolar molecules inside C-70: an electric field-driven room-temperature single-molecule switch

    Czech Academy of Sciences Publication Activity Database

    Foroutan-Nejad, C.; Andrushchenko, Valery; Straka, Michal

    2016-01-01

    Roč. 18, č. 48 (2016), s. 32673-32677 ISSN 1463-9076 R&D Projects: GA ČR(CZ) GA14-03564S Institutional support: RVO:61388963 Keywords : room-temperature single-molecule switch * electric field * endohedral fullerene * density functional calculations Subject RIV: CF - Physical ; Theoretical Chemistry Impact factor: 4.123, year: 2016 http://pubs.rsc.org/en/content/articlepdf/2016/cp/c6cp06986j

  17. Facile synthesis and electrical switching properties of V{sub 2}O{sub 3} powders

    Energy Technology Data Exchange (ETDEWEB)

    Ji, Haining; Liu, Dongqing, E-mail: dongqingliu@ymail.com; Cheng, Haifeng; Yang, Lixiang; Zhang, Chaoyang; Zheng, Wenwei

    2017-03-15

    Highlights: • Single crystal uniform V{sub 2}O{sub 3} powders have been synthesized without additional surfactant. • Powders were obtained in only 6 h. • Powders exhibit reversible phase transition properties. • Powders have excellent electrical switching properties with resistance changes as large as 10{sup 4}. - Abstract: V{sub 2}O{sub 3} powders were synthesized with mercaptoacetic acid (C{sub 2}H{sub 4}O{sub 2}S) as reducing agent and stabilizer via a facile hydrothermal approach. The crystalline structure, surface morphology, valence state of the derived V{sub 2}O{sub 3} powders were characterized via X-ray diffraction, scanning electron microscopy, transmission electron microscopy, X-ray photoelectron spectroscopy. It was found that the ratio and reaction time played a duel role in the formation and morphology of the V{sub 2}O{sub 3} powders. The metal-insulator transition properties of V{sub 2}O{sub 3} powders were studied by the differential scanning calorimetry curve and variable temperature Raman spectra. The change in electrical resistance due to the metal-insulator transition was measured from 80 to 240 K using physical property measurement system. The results showed V{sub 2}O{sub 3} samples had excellent electrical switching properties with resistance changes as large as 10{sup 4}. This simple and fast synthesis approach makes the V{sub 2}O{sub 3} powders easily accessible for exploring their fundamental properties and potential applications in novel electronic devices.

  18. Isolated and soft-switched power converter

    Science.gov (United States)

    Peng, Fang Zheng; Adams, Donald Joe

    2002-01-01

    An isolated and soft-switched power converter is used for DC/DC and DC/DC/AC power conversion. The power converter includes two resonant tank circuits coupled back-to-back through an isolation transformer. Each resonant tank circuit includes a pair of resonant capacitors connected in series as a resonant leg, a pair of tank capacitors connected in series as a tank leg, and a pair of switching devices with anti-parallel clamping diodes coupled in series as resonant switches and clamping devices for the resonant leg. The power converter is well suited for DC/DC and DC/DC/AC power conversion applications in which high-voltage isolation, DC to DC voltage boost, bidirectional power flow, and a minimal number of conventional switching components are important design objectives. For example, the power converter is especially well suited to electric vehicle applications and load-side electric generation and storage systems, and other applications in which these objectives are important. The power converter may be used for many different applications, including electric vehicles, hybrid combustion/electric vehicles, fuel-cell powered vehicles with low-voltage starting, remote power sources utilizing low-voltage DC power sources, such as photovoltaics and others, electric power backup systems, and load-side electric storage and generation systems.

  19. Electrically switched cesium ion exchange. FY 1996 annual report

    International Nuclear Information System (INIS)

    Lilga, M.A.; Orth, R.J.; Sukamto, J.P.H.; Schwartz, D.T.; Haight, S.M.; Genders, D.

    1996-12-01

    An electrochemical method for metal ion separations, called Electrically Switched Ion Exchange, is described. Direct oxidation and reduction of an electroactive film attached to an electrode surface is used to load and unload the film with alkali metal cations. The electroactive films under investigation are Ni hexacyanoferrates, which are deposited on the surface by applying an anodic potential to a Ni electrode in a solution containing the ferricyanide anion. Reported film preparation procedures were modified to produce films with improved capacity and stability. Electrochemical behavior of the derivatized electrodes were investigated using cyclic voltammetry and chronocoulometry. The films show selectivity for Cs in concentrated sodium solutions. Raman spectroscopy was used to monitor changes in oxidation state of the film and imaging experiments have demonstrated that the redox reactions are spatially homogenous across the film. Requirements for a bench scale unit were identified

  20. Control of magnetic relaxation by electric-field-induced ferroelectric phase transition and inhomogeneous domain switching

    Energy Technology Data Exchange (ETDEWEB)

    Nan, Tianxiang; Emori, Satoru; Wang, Xinjun; Hu, Zhongqiang; Xie, Li; Gao, Yuan; Lin, Hwaider; Sun, Nian, E-mail: n.sun@neu.edu [Department of Electrical and Computer Engineering, Northeastern University, Boston, Massachusetts 02115 (United States); Peng, Bin; Liu, Ming, E-mail: mingliu@mail.xjtu.edu.cn [Electronic Materials Research Laboratory, Xi' an Jiaotong University, Xi' an 710049 (China); Jiao, Jie; Luo, Haosu [Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 201800 (China); Budil, David [Department of Chemistry, Northeastern University, Boston, Massachusetts 02115 (United States); Jones, John G.; Howe, Brandon M.; Brown, Gail J. [Materials and Manufacturing Directorate, Air Force Research Laboratory, Wright-Patterson AFB, Ohio 45433 (United States)

    2016-01-04

    Electric-field modulation of magnetism in strain-mediated multiferroic heterostructures is considered a promising scheme for enabling memory and magnetic microwave devices with ultralow power consumption. However, it is not well understood how electric-field-induced strain influences magnetic relaxation, an important physical process for device applications. Here, we investigate resonant magnetization dynamics in ferromagnet/ferroelectric multiferroic heterostructures, FeGaB/PMN-PT and NiFe/PMN-PT, in two distinct strain states provided by electric-field-induced ferroelectric phase transition. The strain not only modifies magnetic anisotropy but also magnetic relaxation. In FeGaB/PMN-PT, we observe a nearly two-fold change in intrinsic Gilbert damping by electric field, which is attributed to strain-induced tuning of spin-orbit coupling. By contrast, a small but measurable change in extrinsic linewidth broadening is attributed to inhomogeneous ferroelastic domain switching during the phase transition of the PMN-PT substrate.

  1. Impact of variable renewable production on electricity prices in Germany: a Markov switching model

    International Nuclear Information System (INIS)

    Martin de Lagarde, Cyril; Lantz, Frederic

    2016-01-01

    This paper aims at assessing the impact of renewable energy sources (RES) production on electricity spot prices. To do so, we use a two-regime Markov Switching (MS) model, that enables to disentangle the so-called 'merit-order effect' due to wind and solar photovoltaic productions (used in relative share of the electricity demand), depending on the price being high or low. We find that there are effectively two distinct price regimes that are put to light thanks to an inverse hyperbolic sine transformation that allows to treat negative prices. We also show that these two regimes coincide quite well with two regimes for the electricity demand (load). Indeed, when demand is low, prices are low and the merit-order effect is lower than when prices are high, which is consistent with the fact that the inverse supply curve is convex (i.e. has increasing slope). To illustrate this, we computed the mean marginal effects of RES production and load. On average, an increase of 1 GW of wind will decrease the price in regime 1 (resp. 2) by 0.77 euro /MWh (resp. 1 euro /MWh). The influence of solar is slightly weaker, as an extra gigawatt lowers the price of 0.73 euro /MWh in period 1, and 0.96 euro /MWh in regime 2. On the contrary, if the demand increases by 1 GW in regime 1 (resp. 2), the price increases on average by 0.93 euro /MWh (resp. 1.18 euro /MWh). Although we made sure these marginal effects are significantly different from one another, they are much more variable than the estimated coefficients of the model. Also, note that these marginal effects are only valid inside each regime when there is no switching. The latter regime partly corresponds to the high load regime, at the exception of periods during which RES production is high. The impact on volatility could also be observed: the variance of the (transformed) price is higher during the high-price regime than in the low-price one. In addition to the switching of the coefficients, we allowed the probabilities of

  2. Fault-tolerant electric drive and space-phasor modulation of flux-switching permanent magnet machine for aerospace application

    NARCIS (Netherlands)

    Wang, L.; Aleksandrov, S.; Tang, Y.; Paulides, J.J.H.; Lomonova, E.A.

    2017-01-01

    This study investigates how to improve the fault tolerance or availability of an electrical drive containing a three-phase 12 stator teeth/10 rotor poles (12/10) the flux-switching permanent magnet machine. In this respect, space-vector modulation and space-phasor modulation will be analysed in this

  3. Know-How on design of switching regulator

    International Nuclear Information System (INIS)

    1985-08-01

    This book introduces switching regulator from base to application, which deals with fundamentals of switching regulator such as the reason of boom about switching regulator, understanding simple circuit without electric transformer and decision of circuit type with input voltage and output voltage, configuration and characteristic of switching regulator, a concrete design of switching regulator, pulse width control circuit and protection circuit, concrete circuit examples of switching power and the point of switching regulator.

  4. An empirical comparison of alternate regime-switching models for electricity spot prices

    Energy Technology Data Exchange (ETDEWEB)

    Janczura, Joanna [Hugo Steinhaus Center, Institute of Mathematics and Computer Science, Wroclaw University of Technology, 50-370 Wroclaw (Poland); Weron, Rafal [Institute of Organization and Management, Wroclaw University of Technology, 50-370 Wroclaw (Poland)

    2010-09-15

    One of the most profound features of electricity spot prices are the price spikes. Markov regime-switching (MRS) models seem to be a natural candidate for modeling this spiky behavior. However, in the studies published so far, the goodness-of-fit of the proposed models has not been a major focus. While most of the models were elegant, their fit to empirical data has either been not examined thoroughly or the signs of a bad fit ignored. With this paper we want to fill the gap. We calibrate and test a range of MRS models in an attempt to find parsimonious specifications that not only address the main characteristics of electricity prices but are statistically sound as well. We find that the best structure is that of an independent spike 3-regime model with time-varying transition probabilities, heteroscedastic diffusion-type base regime dynamics and shifted spike regime distributions. Not only does it allow for a seasonal spike intensity throughout the year and consecutive spikes or price drops, which is consistent with market observations, but also exhibits the 'inverse leverage effect' reported in the literature for spot electricity prices. (author)

  5. An empirical comparison of alternate regime-switching models for electricity spot prices

    International Nuclear Information System (INIS)

    Janczura, Joanna; Weron, Rafal

    2010-01-01

    One of the most profound features of electricity spot prices are the price spikes. Markov regime-switching (MRS) models seem to be a natural candidate for modeling this spiky behavior. However, in the studies published so far, the goodness-of-fit of the proposed models has not been a major focus. While most of the models were elegant, their fit to empirical data has either been not examined thoroughly or the signs of a bad fit ignored. With this paper we want to fill the gap. We calibrate and test a range of MRS models in an attempt to find parsimonious specifications that not only address the main characteristics of electricity prices but are statistically sound as well. We find that the best structure is that of an independent spike 3-regime model with time-varying transition probabilities, heteroscedastic diffusion-type base regime dynamics and shifted spike regime distributions. Not only does it allow for a seasonal spike intensity throughout the year and consecutive spikes or price drops, which is consistent with market observations, but also exhibits the 'inverse leverage effect' reported in the literature for spot electricity prices. (author)

  6. High-Temperature Switched-Reluctance Electric Motor

    Science.gov (United States)

    Montague, Gerald; Brown, Gerald; Morrison, Carlos; Provenza, Andy; Kascak, Albert; Palazzolo, Alan

    2003-01-01

    An eight-pole radial magnetic bearing has been modified into a switched-reluctance electric motor capable of operating at a speed as high as 8,000 rpm at a temperature as high as 1,000 F (=540 C). The motor (see figure) is an experimental prototype of starter-motor/generator units that have been proposed to be incorporated into advanced gas turbine engines and that could operate without need for lubrication or active cooling. The unique features of this motor are its electromagnet coils and, to some extent, its control software. Heretofore, there has been no commercial-off-the-shelf wire capable of satisfying all of the requirements for fabrication of electromagnet coils capable of operation at temperatures up to 1,000 F (=540 C). The issues addressed in the development of these electromagnet coils included thermal expansion, oxidation, pliability to small bend radii, micro-fretting, dielectric breakdown, tensile strength, potting compound, thermal conduction, and packing factor. For a test, the motor was supported, along with a rotor of 18 lb (.8-kg) mass, 3-in. (.7.6-cm) diameter, 21-in. (.53-cm) length, on bearings packed with high-temperature grease. The motor was located at the mid span of the rotor and wrapped with heaters. The motor stator was instrumented with thermocouples. At the time of reporting the information for this article, the motor had undergone 14 thermal cycles between room temperature and 1,000 F (.540 C) and had accumulated operating time >27.5 hours at 1,000 F (=540 C). The motor-controller hardware includes a personal computer equipped with analog-to-digital input and digital-to-analog output cards. The controller software is a C-language code that implements a switched-reluctance motor-control principle: that is, it causes the coils to be energized in a sequence timed to generate a rotating magnetic flux that creates a torque on a scalloped rotor. The controller can operate in an open- or closed-loop mode. In addition, the software has

  7. Avalanche photoconductive switching

    Science.gov (United States)

    Pocha, M. D.; Druce, R. L.; Wilson, M. J.; Hofer, W. W.

    This paper describes work being done at Lawrence Livermore National Laboratory on the avalanche mode of operation of laser triggered photoconductive switches. We have been able to generate pulses with amplitudes of 2 kV to 35 kV and rise times of 300 to 500 ps, and with a switching gain (energy of output electrical pulse vs energy of trigger optical pulse) of 10(exp 3) to over 10(exp 5). Switches with two very different physical configurations and with two different illumination wavelengths (1.06 micrometer, 890 nm) exhibit very similar behavior. The avalanche switching behavior, therefore, appears to be related to the material parameters rather than the optical wavelength or switch geometry. Considerable further work needs to be done to fully characterize and understand this mode of operation.

  8. Avalanche photoconductive switching

    Energy Technology Data Exchange (ETDEWEB)

    Pocha, M.D.; Druce, R.L.; Wilson, M.J.; Hofer, W.W.

    1989-01-01

    This paper describes work being done at Lawrence Livermore National Laboratory on the avalanche mode of operation of laser triggered photoconductive switches. We have been able to generate pulses with amplitudes of 2 kV--35 kV and rise times of 300--500 ps, and with a switching gain (energy of output electrical pulse vs energy of trigger optical pulse) of 10{sup 3} to over 10{sup 5}. Switches with two very different physical configurations and with two different illumination wavelengths (1.06 {mu}m, 890 nm) exhibit very similar behavior. The avalanche switching behavior, therefore, appears to be related to the material parameters rather than the optical wavelength or switch geometry. Considerable further work needs to be done to fully characterize and understand this mode of operation. 3 refs., 6 figs.

  9. Cyclic Parameter Refinement of 4S-10 Hybrid Flux-Switching Motor for Lightweight Electric Vehicle

    Science.gov (United States)

    Rani, J. Abd; Sulaiman, E.; Kumar, R.

    2017-08-01

    A great deal of attention has been given to the reduction of lighting the vehicle because the lighter the vehicle the energy consumption is comparatively low. Hence, the lightweight electric vehicle was introduced for lower carbon footprint and the sizing of the vehicle itself. One of the components to reduce the weight of the vehicle is the propulsion system which comprised of electric motor functioning as the source of torque to drive the propulsion system of the machine. This paper presents the refinement methodology for the optimized design of the 4S-10P E-Core hybrid excitation flux switching motor. The purpose of the refinement methodology is to improve the torque production of the optimized motor. The result of the successful improvement of the torque production is justifiable for a lightweight electric vehicle to drive the propulsion system.

  10. SIMULTANEOUS SPACE VECTOR MODULATION DIRECT TORQUE CONTROL OF TWO INDUCTION MOTORS USED IN ELECTRIC VEHICLES BY A NINE-SWITCH INVERTER

    Directory of Open Access Journals (Sweden)

    A. R. SHAMLOU

    2017-12-01

    Full Text Available In this paper, a novel two output nine switch-inverter is proposed in order to increase the synchronization speed of induction motors used in electric vehicles (EVs while improving the efficiency and controllability of the system. The number of switches in the proposed inverter is reduced by 25% compared to double six-switch inverters which conventionally used in EVs. The main characteristics of the considered inverter can be noted as follows: sinusoidal input and outputs, unity output power factor, and specifically, low construction cost due to active switch number reduction. The classical direct torque control method causes torque ripple and speed fluctuations. Therefore, in order to increase accuracy and dynamics of drive system, the SVM-DTC method is proposed, leading to less torque ripple and constant switching frequency. The obtained torque ripple is 2% which is less than the existing structures In order to illustrate advantages of the proposed approach, performance of the EVs in the standard cycles is evaluated.

  11. A new two-phase homopolar switched reluctance motor for electric vehicle applications

    Science.gov (United States)

    Tsai, Mi-Ching; Huang, Chien-Chin; Huang, Zheng-Yi

    2003-12-01

    This paper presents a novel 2-phase homopolar switched reluctance motor (SRM), whose design successfully avoids dead-zone problems that afflict low cost 1- and/or 2-phase SRMs. Unlike conventional radial-winding-radial-gap motors, the proposed SRM has an interior stator that is of the pancake type with axial winding. Such a design allows for a high slot-fill factor and is suitable for implementation as a flat pancake-shaped stator. An efficient, compact prototype was produced with TMS320F240 DSP driving control unit. Experimental results indicate that the present SRM design has the potential to be used for electric bicycles and scooters.

  12. Recent developments in switching theory

    CERN Document Server

    Mukhopadhyay, Amar

    2013-01-01

    Electrical Science Series: Recent Developments in Switching Theory covers the progress in the study of the switching theory. The book discusses the simplified proof of Post's theorem on completeness of logic primitives; the role of feedback in combinational switching circuits; and the systematic procedure for the design of Lupanov decoding networks. The text also describes the classical results on counting theorems and their application to the classification of switching functions under different notions of equivalence, including linear and affine equivalences. The development of abstract har

  13. Barrier heights, polarization switching, and electrical fatigue in Pb(Zr,Ti)O3 ceramics with different electrodes

    Science.gov (United States)

    Chen, Feng; Schafranek, Robert; Wachau, André; Zhukov, Sergey; Glaum, Julia; Granzow, Torsten; von Seggern, Heinz; Klein, Andreas

    2010-11-01

    The influence of Pt, tin-doped In2O3, and RuO2 electrodes on the electrical fatigue of bulk ceramic Pb(Zr,Ti)O3 (PZT) has been studied. Schottky barrier heights at the ferroelectric/electrode interfaces vary by more than one electronvolt for different electrode materials and do not depend on crystallographic orientation of the interface. Despite different barrier heights, hysteresis loops of polarization, strain, permittivity, and piezoelectric constant and the switching kinetics are identical for all electrodes. A 20% reduction in polarization after 106 bipolar cycles is observed for all the samples. In contrast to PZT thin films, the loss of remanent polarization with bipolar switching cycles does not significantly depend on the electrode material.

  14. Electrical switching in Sb doped Al23Te77 glasses

    Science.gov (United States)

    Pumlianmunga; Ramesh, K.

    2017-08-01

    Bulk glasses (Al23Te77)Sbx (0≤ x≤10) prepared by melt quenching method show a change in switching type from threshold to memory for x≥5. An increase in threshold current (Ith) and a concomitant decrease in threshold voltage (Vth) and resisitivity(ρ) have been observed with the increase of Sb content. Raman spectra of the switched region in memory switching compositions show a red shift with respect to the as prepared glasses whereas in threshold switching compositions no such shift is observed. The magic angle spinning nuclear magnetic resonance (MAS NMR) of 27Al atom shows three different environments for Al ([4]Al, [5]Al and [6]Al). The samples annealed at their respective crystallization temperatures show rapid increase in [4]Al sites by annihilating [5]Al sites. The melts of threshold switching glasses (x≤2.5) quenched in water at room temperature (27 °C) show amorphous structure whereas, the melt of memory switching glasses (x>2.5) solidify into crystalline structure. The higher coordination of Al increases the cross-linking and rigidity. The addition of Sb increases the glass transition(Tg) and decreases the crystallization temperature(Tc). The decrease in the interval between the Tg and Tc eases the transition between the amorphous and crystalline states and improves the memory properties. The temperature rise at the time of switching can be as high as its melting temperature and the material in between the electrodes may melt to form a filament. The filament may consists of temporary (high resistive amorphous) and permanent (high conducting crystalline) units. The ratio between the temporary and the permanent units may decide the switching type. The filament is dominated by the permanent units in memory switching compositions and by the temporary units in threshold switching compositions. The present study suggests that both the threshold and memory switching can be understood by the thermal model and filament formation.

  15. Optimal recharging strategy for battery-switch stations for electric vehicles in France

    International Nuclear Information System (INIS)

    Armstrong, M.; El Hajj Moussa, C.; Adnot, J.; Galli, A.; Riviere, P.

    2013-01-01

    Most papers that study the recharging of electric vehicles focus on charging the batteries at home and at the work-place. The alternative is for owners to exchange the battery at a specially equipped battery switch station (BSS). This paper studies strategies for the BSS to buy and sell the electricity through the day-ahead market. We determine what the optimal strategies would have been for a large fleet of EVs in 2010 and 2011, for the V2G and the G2V cases. These give the amount that the BSS should offer to buy or sell each hour of the day. Given the size of the fleet, the quantities of electricity bought and sold will displace the market equilibrium. Using the aggregate offers to buy and the bids to sell on the day-ahead market, we compute what the new prices and volumes transacted would be. While buying electricity for the G2V case incurs a cost, it would have been possible to generate revenue in the V2G case, if the arrivals of the EVs had been evenly spaced during the day. Finally, we compare the total cost of implementing the strategies with the cost of buying the same quantity of electricity from EDF. - Highlights: • Optimal strategies for buying/selling electricity through day-ahead auction market. • Given fleet size power bought and sold would change market price and volume. • New prices computed using aggregate offers to buy/sell power in 2010 and 2011. • Timing of arrival of EVs critical in V2G case. If evenly spaced BSS makes money. • Strategies are very robust even when French and German markets were coupled Nov. 2010

  16. Charge trapping at organic/self-assembly molecule interfaces studied by electrical switching behaviour in a crosspoint structure

    International Nuclear Information System (INIS)

    Li Yun; Pan Lijia; Pu Lin; Shi Yi; Liu Chuan; Tsukagoshi, Kazuhito

    2012-01-01

    Charge trapping at organic/self-assembly molecule (SAM) interfaces is studied by the electrical switching behaviour in a crosspoint structure, where interfacial charge trapping tunes the potential barrier of the SAM layer. The sample with rubrene exhibits the write-once read-many-times memory effect, which is due to the interfacial charges trapped at deep states. On the other hand, the sample with 2-amino-4,5-dicyanoimidazole presents recyclable conduction transition, which results from the trapped charges distributed at shallow states. Moreover, the percentage of the charges trapped at shallow states can be estimated from electrical transition levels. (paper)

  17. Charge trapping at organic/self-assembly molecule interfaces studied by electrical switching behaviour in a crosspoint structure

    Science.gov (United States)

    Li, Yun; Liu, Chuan; Pan, Lijia; Pu, Lin; Tsukagoshi, Kazuhito; Shi, Yi

    2012-01-01

    Charge trapping at organic/self-assembly molecule (SAM) interfaces is studied by the electrical switching behaviour in a crosspoint structure, where interfacial charge trapping tunes the potential barrier of the SAM layer. The sample with rubrene exhibits the write-once read-many-times memory effect, which is due to the interfacial charges trapped at deep states. On the other hand, the sample with 2-amino-4,5-dicyanoimidazole presents recyclable conduction transition, which results from the trapped charges distributed at shallow states. Moreover, the percentage of the charges trapped at shallow states can be estimated from electrical transition levels.

  18. Analytical Modeling and Simulation of Four-Switch Hybrid Power Filter Working with Sixfold Switching Symmetry

    Czech Academy of Sciences Publication Activity Database

    Tlustý, J.; Škramlík, Jiří; Švec, J.; Valouch, Viktor

    2012-01-01

    Roč. 2012, č. 292178 (2012), s. 1-17 ISSN 1024-123X Institutional support: RVO:61388998 Keywords : analytical modeling * four-switch hybrid power filter * sixfold switching symmetry Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering Impact factor: 1.383, year: 2012 http://www.hindawi.com/journals/mpe/2012/292178/

  19. 35-kV GaAs subnanosecond photoconductive switches

    Energy Technology Data Exchange (ETDEWEB)

    Pocha, M.D.; Druce, R.L. (Lawrence Livermore National Lab., CA (United States))

    1990-12-01

    Photoconductive switches are one of the few devices that allow the generation of high-voltage electrical pulses with subnanosecond rise time. The authors are exploring high-voltage, fast-pulse generation using GaAs photoconductive switches. They have been able to generate 35-kV pulses with rise times as short as 135 ps using 5-mm gap switches and have achieved electric field hold-off of greater than 100 kV/cm. They have also been able to generate an approximately 500-ps FWHM on/off electrical pulse with an amplitude of approximately 3 kV using neutron-irradiated GaAs having short carrier life times. This paper describes the experimental results and discusses fabrication of switches and the diagnostics used to measure these fast signals. They also describe the experience with the nonlinear lock-on and avalanche modes of operation observed in GaAs.

  20. Vehicle electrical system state controller

    Science.gov (United States)

    Bissontz, Jay E.

    2017-10-17

    A motor vehicle electrical power distribution system includes a plurality of distribution sub-systems, an electrical power storage sub-system and a plurality of switching devices for selective connection of elements of and loads on the power distribution system to the electrical power storage sub-system. A state transition initiator provides inputs to control system operation of switching devices to change the states of the power distribution system. The state transition initiator has a plurality of positions selection of which can initiate a state transition. The state transition initiator can emulate a four position rotary ignition switch. Fail safe power cutoff switches provide high voltage switching device protection.

  1. New Integrated Multilevel Converter for Switched Reluctance Motor Drives in Plug-in Hybrid Electric Vehicles with Flexible Energy Conversion

    DEFF Research Database (Denmark)

    Gan, Chun; Wu, Jianhua; Hu, Yihua

    2017-01-01

    This paper presents an integrated multilevel converter of switched reluctance motors (SRMs) fed by a modular front-end circuit for plug-in hybrid electric vehicle (PHEV) applications. Several operating modes can be achieved by changing the on-off states of the switches in the front-end circuit......, the battery can be charged by the external AC source or generator when the vehicle is in standstill condition. The SRM-based PHEV can operate at different speeds by coordinating power flow from the generator and battery. Simulation in MATLAB/Simulink and experiments on a three-phase 12/8 SRM confirm...

  2. A level switch with a sound tube

    OpenAIRE

    赤池, 誠規

    2017-01-01

    Level switches are sensor with an electrical contact output at a specific liquid, powder or bulk level. Most of traditional level switches are not suitable for harsh environments. The level switch in this study connects a loudspeaker on top end of the sound tube. When liquid, powder or bulk closes bottom end of the sound tube, the level switch turns on. The level switch is suitable for harsh environments and easy to install. The aim of this study is to propose a level switch with a sound tube...

  3. A regime-switching copula approach to modeling day-ahead prices in coupled electricity markets

    DEFF Research Database (Denmark)

    Pircalabu, Anca; Benth, Fred Espen

    2017-01-01

    significant evidence of tail dependence in all pairs of interconnected areas we consider. As a first application of the proposed model, we consider the pricing of financial transmission rights, and highlight how the choice of marginal distributions and copula impacts prices. As a second application we......The recent price coupling of many European electricity markets has triggered a fundamental change in the interaction of day-ahead prices, challenging additionally the modeling of the joint behavior of prices in interconnected markets. In this paper we propose a regime-switching AR–GARCH copula...... to model pairs of day-ahead electricity prices in coupled European markets. While capturing key stylized facts empirically substantiated in the literature, this model easily allows us to 1) deviate from the assumption of normal margins and 2) include a more detailed description of the dependence between...

  4. Novel RF-MEMS capacitive switching structures

    NARCIS (Netherlands)

    Rottenberg, X.; Jansen, Henricus V.; Fiorini, P.; De Raedt, W.; Tilmans, H.A.C.

    2002-01-01

    This paper reports on novel RF-MEMS capacitive switching devices implementing an electrically floating metal layer covering the dielectric to ensure intimate contact with the bridge in the down state. This results in an optimal switch down capacitance and allows optimisation of the down/up

  5. Electrical switching phenomenon and memory effect in the semiconductor chalcogenide glass Ge0.10 As0.20 Te0.70

    International Nuclear Information System (INIS)

    Haro, M.; Marquez, E.; Villares, P.; Jimenez-Garay, R.

    1987-01-01

    Electrical switching phenomenon, as well as the memory effect in the semiconductor chalcogenide glass Ge 0.10 As 0.20 Te 0.70 has been studied. A device with a plano-punctual interelectrode configuration has been designed and built, so that the electrical stimuli may be applied correctly. This device permits adequate positioning of the upper electrode, as well as contact pressure regulation. The I-V characteristics in the OFF-state have been obtained, showing a marked non-linear character. Equally, a relation has been found between the threshold voltage and electrical resistance parameters, indicating that the electrical power giving rise to the phenomenon is constant. Finally, memory effects showing a sudden reduction in electrical resistance, as well as interelectrode filaments, have been observed. (author)

  6. Resistance switching at the nanometre scale in amorphous carbon

    International Nuclear Information System (INIS)

    Sebastian, Abu; Rossel, Christophe; Pozidis, Haralampos; Eleftheriou, Evangelos; Pauza, Andrew; Shelby, Robert M; RodrIguez, Arantxa Fraile

    2011-01-01

    The electrical transport and resistance switching mechanism in amorphous carbon (a-C) is investigated at the nanoscale. The electrical conduction in a-C thin films is shown to be captured well by a Poole-Frenkel transport model that involves nonisolated traps. Moreover, at high electric fields a field-induced threshold switching phenomenon is observed. The following resistance change is attributed to Joule heating and subsequent localized thermal annealing. We demonstrate that the mechanism is mostly due to clustering of the existing sp 2 sites within the sp 3 matrix. The electrical conduction behaviour, field-induced switching and Joule-heating-induced rearrangement of atomic order resulting in a resistance change are all reminiscent of conventional phase-change memory materials. This suggests the potential of a-C as a similar nonvolatile memory candidate material.

  7. Electricity of machine tool

    International Nuclear Information System (INIS)

    Gijeon media editorial department

    1977-10-01

    This book is divided into three parts. The first part deals with electricity machine, which can taints from generator to motor, motor a power source of machine tool, electricity machine for machine tool such as switch in main circuit, automatic machine, a knife switch and pushing button, snap switch, protection device, timer, solenoid, and rectifier. The second part handles wiring diagram. This concludes basic electricity circuit of machine tool, electricity wiring diagram in your machine like milling machine, planer and grinding machine. The third part introduces fault diagnosis of machine, which gives the practical solution according to fault diagnosis and the diagnostic method with voltage and resistance measurement by tester.

  8. Parasitic resistive switching uncovered from complementary resistive switching in single active-layer oxide memory device

    Science.gov (United States)

    Zhu, Lisha; Hu, Wei; Gao, Chao; Guo, Yongcai

    2017-12-01

    This paper reports the reversible transition processes between the bipolar and complementary resistive switching (CRS) characteristics on the binary metal-oxide resistive memory devices of Pt/HfO x /TiN and Pt/TaO x /TiN by applying the appropriate bias voltages. More interestingly, by controlling the amplitude of the negative bias, the parasitic resistive switching effect exhibiting repeatable switching behavior is uncovered from the CRS behavior. The electrical observation of the parasitic resistive switching effect can be explained by the controlled size of the conductive filament. This work confirms the transformation and interrelationship among the bipolar, parasitic, and CRS effects, and thus provides new insight into the understanding of the physical mechanism of the binary metal-oxide resistive switching memory devices.

  9. Energy storage, compression, and switching. Vol. 2

    International Nuclear Information System (INIS)

    Nardi, V.; Bostick, W.H.; Sahlin, H.

    1983-01-01

    This book is a compilation of papers presented at the Second International Conference on Energy Storage, Compression, and Switching, which was held in order to assemble active researchers with a major interest in plasma physics, electron beams, electric and magnetic energy storage systems, high voltage and high current switches, free-electron lasers, and pellet implosion plasma focus. Topics covered include: Slow systems: 50-60 Hz machinery, homopolar generators, slow capacitors, inductors, and solid state switches; Intermediate systems: fast capacitor banks; superconducting storage and switching; gas, vacuum, and dielectric switching; nonlinear (magnetic) switching; imploding liners capacitors; explosive generators; and fuses; and Fast systems: Marx, Blumlein, oil, water, and pressurized water dielectrics; switches; magnetic insulation; electron beams; and plasmas

  10. EYE CONTROLLED SWITCHING USING CIRCULAR HOUGH TRANSFORM

    OpenAIRE

    Sagar Lakhmani

    2014-01-01

    The paper presents hands free interface between electrical appliances or devices. This technology is intended to replace conventional switching devices for the use of disabled. It is a new way to interact with the electrical or electronic devices that we use in our daily life. The paper illustrates how the movement of eye cornea and blinking can be used for switching the devices. The basic Circle Detection algorithm is used to determine the position of eye. Eye blinking is used...

  11. Voltage-Driven Magnetization Switching and Spin Pumping in Weyl Semimetals

    Science.gov (United States)

    Kurebayashi, Daichi; Nomura, Kentaro

    2016-10-01

    We demonstrate electrical magnetization switching and spin pumping in magnetically doped Weyl semimetals. The Weyl semimetal is a three-dimensional gapless topological material, known to have nontrivial coupling between the charge and the magnetization due to the chiral anomaly. By solving the Landau-Lifshitz-Gilbert equation for a multilayer structure of a Weyl semimetal, an insulator and a metal while taking the charge-magnetization coupling into account, magnetization dynamics is analyzed. It is shown that the magnetization dynamics can be driven by the electric voltage. Consequently, switching of the magnetization with a pulsed electric voltage can be achieved, as well as precession motion with an applied oscillating electric voltage. The effect requires only a short voltage pulse and may therefore be energetically favorable for us in spintronics devices compared to conventional spin-transfer torque switching.

  12. Stochastic multistep polarization switching in ferroelectrics

    Science.gov (United States)

    Genenko, Y. A.; Khachaturyan, R.; Schultheiß, J.; Ossipov, A.; Daniels, J. E.; Koruza, J.

    2018-04-01

    Consecutive stochastic 90° polarization switching events, clearly resolved in recent experiments, are described by a nucleation and growth multistep model. It extends the classical Kolmogorov-Avrami-Ishibashi approach and includes possible consecutive 90°- and parallel 180° switching events. The model predicts the results of simultaneous time-resolved macroscopic measurements of polarization and strain, performed on a tetragonal Pb (Zr ,Ti ) O3 ceramic in a wide range of electric fields over a time domain of seven orders of magnitude. It allows the determination of the fractions of individual switching processes, their characteristic switching times, activation fields, and respective Avrami indices.

  13. Column Generation for Transmission Switching of Electricity Networks with Unit Commitment

    DEFF Research Database (Denmark)

    Villumsen, Jonas Christoffer; Philpott, Andy B.

    2011-01-01

    This paper presents the problem of finding the minimum cost dispatch and commitment of power generation units in a transmission network with active switching.We use the term active switching to denote the use of switches to optimize network topology in an operational context. We propose a Dantzig...

  14. Investigation on properties of ultrafast switching in a bulk gallium arsenide avalanche semiconductor switch

    International Nuclear Information System (INIS)

    Hu, Long; Su, Jiancang; Ding, Zhenjie; Hao, Qingsong; Yuan, Xuelin

    2014-01-01

    Properties of ultrafast switching in a bulk gallium arsenide (GaAs) avalanche semiconductor switch based on semi-insulating wafer, triggered by an optical pulse, were analyzed using physics-based numerical simulations. It has been demonstrated that when a voltage with amplitude of 5.2 kV is applied, after an exciting optical pulse with energy of 1 μJ arrival, the structure with thickness of 650 μm reaches a high conductivity state within 110 ps. Carriers are created due to photons absorption, and electrons and holes drift to anode and cathode terminals, respectively. Static ionizing domains appear both at anode and cathode terminals, and create impact-generated carriers which contribute to the formation of electron-hole plasma along entire channel. When the electric field in plasma region increases above the critical value (∼4 kV/cm) at which the electrons drift velocity peaks, a domain comes into being. An increase in carrier concentration due to avalanche multiplication in the domains reduces the domain width and results in the formation of an additional domain as soon as the field outside the domains increases above ∼4 kV/cm. The formation and evolution of multiple powerfully avalanching domains observed in the simulations are the physical reasons of ultrafast switching. The switch exhibits delayed breakdown with the characteristics affected by biased electric field, current density, and optical pulse energy. The dependence of threshold energy of the exciting optical pulse on the biased electric field is discussed

  15. Modeling and analysis of the Rimfire gas switch

    International Nuclear Information System (INIS)

    Gahl, John M.; Kemp, Mark A.; Struve, Kenneth William; Curry, Randy D.; McDonald, Ken F.

    2005-01-01

    Many accelerators at Sandia National Laboratories utilize the Rimfire gas switch for high-voltage, high-power switching. Future accelerators will have increased performance requirements for switching elements. When designing improved versions of the Rimfire switch, there is a need for quick and accurate simulation of the electrical effects of geometry changes. This paper presents an advanced circuit model of the Rimfire switch that can be used for these simulations. The development of the model is shown along with comparisons to past models and experimental results.

  16. Complementary resistive switching in BaTiO3/NiO bilayer with opposite switching polarities

    Science.gov (United States)

    Li, Shuo; Wei, Xianhua; Lei, Yao; Yuan, Xincai; Zeng, Huizhong

    2016-12-01

    Resistive switching behaviors have been investigated in the Au/BaTiO3/NiO/Pt structure by stacking the two elements with different switching types. The conducting atomic force microscope measurements on BaTiO3 thin films and NiO thin films suggest that with the same active resistive switching region, the switching polarities in the two semiconductors are opposite to each other. It is in agreement with the bipolar hysteresis I-V curves with opposite switching polarities for single-layer devices. The bilayer devices show complementary resistive switching (CRS) without electroforming and unipolar resistive switching (URS) after electroforming. The coexistence of CRS and URS is mainly ascribed to the co-effect of electric field and Joule heating mechanisms, indicating that changeable of resistance in this device is dominated by the redistribution of oxygen vacancies in BaTiO3 and the formation, disruption, restoration of conducting filaments in NiO. CRS in bilayer with opposite switching polarities is effective to solve the sneak current without the introduction of any selector elements or an additional metal electrode.

  17. Electricity sequence control

    International Nuclear Information System (INIS)

    Shin, Heung Ryeol

    2010-03-01

    The contents of the book are introduction of control system, like classification and control signal, introduction of electricity power switch, such as push-button and detection switch sensor for induction type and capacitance type machinery for control, solenoid valve, expression of sequence and type of electricity circuit about using diagram, time chart, marking and term, logic circuit like Yes, No, and, or and equivalence logic, basic electricity circuit, electricity sequence control, added condition, special program control about choice and jump of program, motor control, extra circuit on repeat circuit, pause circuit in a conveyer, safety regulations and rule about classification of electricity disaster and protective device for insulation.

  18. AN ANALYTICAL STUDY OF SWITCHING TRACTION MOTORS

    Directory of Open Access Journals (Sweden)

    V. M. Bezruchenko

    2010-03-01

    Full Text Available The analytical study of switching of the tractive engines of electric locomotives is conducted. It is found that the obtained curves of change of current of the sections commuted correspond to the theory of average rectilinear switching. By means of the proposed method it is possible on the stage of design of tractive engines to forecast the quality of switching and to correct it timely.

  19. Intra-day and regime-switching dynamics in electricity price formation

    International Nuclear Information System (INIS)

    Karakatsani, Nektaria V.; Bunn, Derek W.

    2008-01-01

    This paper analyses the complex, non-linear effects of spot price drivers in wholesale electricity markets: their intra-day dynamics and transient irregularities. The context is the UK market, after the reforms introduced in March 2001, analysed with an original set of price drivers reflecting economic, technical, strategic, risk, behavioural and market design effects. Models are estimated separately as daily time-series of the 48 half-hourly trading periods. All coefficients exhibit substantial intra-day variation, relating to the heterogeneity of operating plants and market design aspects. This reveals a market responding to economic fundamentals and plant operating properties, with learning and emergent financial characteristics, as well as some strategic manipulation of capacity, most effectively exercised by the more flexible plants. Using regime-switching parameters, the effects of capacity margin and inter-day capacity adjustment are elucidated, suggesting rent-seeking behaviour, despite the relatively low prices at the time. Overall, high-frequency, aggregate fundamental price models can usefully uncover critical aspects of market performance, evolution and agent behaviour. (author)

  20. 35-kV GaAs subnanosecond photoconductive switches

    Science.gov (United States)

    Pocha, Michael D.; Druce, Robert L.

    1990-12-01

    High-voltage, fast-pulse generation using GaAs photoconductive switches is investigated. It is possible to to generate 35-kV pulses with risetimes as short as 135 ps using 5-mm gap switches, and electric field hold-off of greater than 100 kV/cm is achieved. An approximately 500-ps FWHM on/off electrical pulse is generated with an amplitude of approximately 3 kV using neutron-irradiated GaAs having short carrier lifetimes. Experimental results are described, and fabrication of switches and the diagnostics used to measure these fast signals are discussed. Experience with the nonlinear lock-on and avalanche modes of operation observed in GaAs is also described.

  1. Electric vehicle speed control

    Energy Technology Data Exchange (ETDEWEB)

    Krueger, W.R.; Mc Auliffe, G.N.; Schlageter, G.A.

    1987-06-23

    This patent describes an electric vehicle driven by a DC motor. The vehicle has a field winding, an electric resistance element in circuit with the field winding, a switch in the circuit operative when closed to place. The element in parallel with the field winding weakens the field and increases potential motor speed. Also are relay means for operating the switch, means to determine motor speed, computer means for determining whether the motor speed is increasing or decreasing, and means for operating the relay means to close the switch at a first speed. If the motor speed is increased, it actuates the switch at a second speed lower than the first speed but only if switch has been closed previously and motor speed is decreasing.

  2. Development of Electrically Switched Ion Exchange Process for Selective Ion Separations

    International Nuclear Information System (INIS)

    Rassat, Scot D.; Sukamto, Johanes H.; Orth, Rick J.; Lilga, Michael A.; Hallen, Richard T.

    1999-01-01

    The electrically switched ion exchange (ESIX) process, being developed at Pacific Northwest National Laboratory, provides an alternative separation method to selectively remove ions from process and waste streams. In the ESIX process, in which an electroactive ion exchange film is deposited onto a high surface area electrode, uptake and elution are controlled directly by modulating the electrochemical potential of the film. This paper addresses engineering issues necessary to fully develop ESIX for specific industrial alkali cation separation challenges. The cycling and chemical stability and alkali cation selectivity of nickel hexacyanoferrate (NiHCF) electroactive films were investigated. The selectivity of NiHCF was determined using cyclic voltammetry and a quartz crystal microbalance to quantify ion uptake in the film. Separation factors indicated a high selectivity for cesium and a moderate selectivity for potassium in high sodium content solutions. A NiHCF film with improved redox cycling and chemical stability in a simulated pulp mill process stream, a targeted application for ESIX, was also prepared and tested

  3. The Development of the Electrically Controlled High Power RF Switch and Its Application to Active RF Pulse Compression Systems

    Energy Technology Data Exchange (ETDEWEB)

    Guo, Jiquan [Stanford Univ., CA (United States)

    2008-12-01

    In the past decades, there has been increasing interest in pulsed high power RF sources for building high-gradient high-energy particle accelerators. Passive RF pulse compression systems have been used in many applications to match the available RF sources to the loads requiring higher RF power but a shorter pulse. Theoretically, an active RF pulse compression system has the advantage of higher efficiency and compactness over the passive system. However, the key component for such a system an element capable of switching hundreds of megawatts of RF power in a short time compared to the compressed pulse width is still an open problem. In this dissertation, we present a switch module composed of an active window based on the bulk effects in semiconductor, a circular waveguide three-port network and a movable short plane, with the capability to adjust the S-parameters before and after switching. The RF properties of the switch module were analyzed. We give the scaling laws of the multiple-element switch systems, which allow the expansion of the system to a higher power level. We present a novel overmoded design for the circular waveguide three-port network and the associated circular-to-rectangular mode-converter. We also detail the design and synthesis process of this novel mode-converter. We demonstrate an electrically controlled ultra-fast high power X-band RF active window built with PIN diodes on high resistivity silicon. The window is capable of handling multi-megawatt RF power and can switch in 2-300ns with a 1000A current driver. A low power active pulse compression experiment was carried out with the switch module and a 375ns resonant delay line, obtaining 8 times compression gain with a compression ratio of 20.

  4. Design Comparison of Inner and Outer Rotor of Permanent Magnet Flux Switching Machine for Electric Bicycle Application

    Science.gov (United States)

    Jusoh, L. I.; Sulaiman, E.; Bahrim, F. S.; Kumar, R.

    2017-08-01

    Recent advancements have led to the development of flux switching machines (FSMs) with flux sources within the stators. The advantage of being a single-piece machine with a robust rotor structure makes FSM an excellent choice for speed applications. There are three categories of FSM, namely, the permanent magnet (PM) FSM, the field excitation (FE) FSM, and the hybrid excitation (HE) FSM. The PMFSM and the FEFSM have their respective PM and field excitation coil (FEC) as their key flux sources. Meanwhile, as the name suggests, the HEFSM has a combination of PM and FECs as the flux sources. The PMFSM is a simple and cheap machine, and it has the ability to control variable flux, which would be suitable for an electric bicycle. Thus, this paper will present a design comparison between an inner rotor and an outer rotor for a single-phase permanent magnet flux switching machine with 8S-10P, designed specifically for an electric bicycle. The performance of this machine was validated using the 2D- FEA. As conclusion, the outer-rotor has much higher torque approximately at 54.2% of an innerrotor PMFSM. From the comprehensive analysis of both designs it can be conclude that output performance is lower than the SRM and IPMSM design machine. But, it shows that the possibility to increase the design performance by using “deterministic optimization method”.

  5. Domain switching in single-phase multiferroics

    Science.gov (United States)

    Jia, Tingting; Cheng, Zhenxiang; Zhao, Hongyang; Kimura, Hideo

    2018-06-01

    Multiferroics are a time-honoured research subject by reason for their tremendous application potential in the information industry, such as in multi-state information storage devices and new types of sensors. An outburst of studies on multiferroicity has been witnessed in the 21st century, although this field has a long research history since the 19th century. Multiferroicity has now become one of the hottest research topics in condensed matter physics and materials science. Numerous efforts have been made to investigate the cross-coupling phenomena among ferroic orders such as ferroelectricity, (anti-)ferromagnetism, and ferroelasticity, especially the coupling between electric and magnetic orderings that would account for the magnetoelectric (ME) effect in multiferroic materials. The magnetoelectric properties and coupling behavior of single phase multiferroics are dominated by their domain structures. It was also noted that, however, the multiferroic materials exhibit very complicated domain structures. Studies on domain structure characterization and domain switching are a crucial step in the exploration of approaches to the control and manipulation of magnetic (electric) properties using an electric (magnetic) field or other means. In this review, following a concise outline of our current basic knowledge on the magnetoelectric (ME) effect, we summarize some important research activities on domain switching in single-phase multiferroic materials in the form of single crystals and thin films, especially domain switching behavior involving strain and the related physics in the last decade. We also introduce recent developments in characterization techniques for domain structures of ferroelectric or multiferroic materials, which have significantly advanced our understanding of domain switching dynamics and interactions. The effects of a series of issues such as electric field, magnetic field, and stress effects on domain switching are been discussed as well. It

  6. Investment in electricity networks with transmission switching

    DEFF Research Database (Denmark)

    Villumsen, Jonas Christoffer; Philpott, A.B.

    2012-01-01

    allows the solution of large problem instances. The methodology is illustrated by its application to a problem of determining the optimal investment in switching equipment and transmission capacity for an existing network. Computational tests on IEEE test networks with 73 nodes and 118 nodes confirm...

  7. Field-induced resistance switching at metal/perovskite manganese oxide interface

    International Nuclear Information System (INIS)

    Ohkubo, I.; Tsubouchi, K.; Harada, T.; Kumigashira, H.; Itaka, K.; Matsumoto, Y.; Ohnishi, T.; Lippmaa, M.; Koinuma, H.; Oshima, M.

    2008-01-01

    Planar type metal/insulator/metal structures composed of an epitaxial perovskite manganese oxide layer and various metal electrodes were prepared for electric-field-induced resistance switching. Only the electrode pairs including Al show good resistance switching and the switching ratio reaches its maximum of 1000. This resistance switching occurs around the interface between Al electrodes and epitaxial perovskite manganese oxide thin films

  8. Puget Sound Area Electric Reliability Plan. Appendix D, Conservation, Load Management and Fuel Switching Analysis : Draft Environmental Impact Statement.

    Energy Technology Data Exchange (ETDEWEB)

    United States. Bonneville Power Administration.

    1991-09-01

    Various conservation, load management, and fuel switching programs were considered as ways to reduce or shift system peak load. These programs operate at the end-use level, such as residential water heat. Figure D-1a shows what electricity consumption for water heat looks like on normal and extreme peak days. Load management programs, such as water heat control, are designed to reduce electricity consumption at the time of system peak. On the coldest day in average winter, system load peaks near 8:00 a.m. In a winter with extremely cold weather, electricity consumption increases fr all hours, and the system peak shifts to later in the morning. System load shapes in the Puget Sound area are shown in Figure D-1b for a normal winter peak day (February 2, 1988) and extreme peak day (February 3, 1989). Peak savings from any program are calculated to be the reduction in loads on the entire system at the hour of system peak. Peak savings for all programs are measured at 8:00 a.m. on a normal peak day and 9:00 a.m. on an extreme peak day. On extremely cold day, some water heat load shifts to much later in the morning, with less load available for shedding at the time of system peak. Models of hourly end-use consumption were constructed to simulate the impact of conservation, land management, and fuel switching programs on electricity consumption. Javelin, a time-series simulating package for personal computers, was chosen for the hourly analysis. Both a base case and a program case were simulated. 15 figs., 7 tabs.

  9. Nanoeletromechanical switch and logic circuits formed therefrom

    Science.gov (United States)

    Nordquist, Christopher D [Albuquerque, NM; Czaplewski, David A [Albuquerque, NM

    2010-05-18

    A nanoelectromechanical (NEM) switch is formed on a substrate with a source electrode containing a suspended electrically-conductive beam which is anchored to the substrate at each end. This beam, which can be formed of ruthenium, bows laterally in response to a voltage applied between a pair of gate electrodes and the source electrode to form an electrical connection between the source electrode and a drain electrode located near a midpoint of the beam. Another pair of gate electrodes and another drain electrode can be located on an opposite side of the beam to allow for switching in an opposite direction. The NEM switch can be used to form digital logic circuits including NAND gates, NOR gates, programmable logic gates, and SRAM and DRAM memory cells which can be used in place of conventional CMOS circuits, or in combination therewith.

  10. Electric-field assisted switching of magnetization in perpendicularly magnetized (Ga,Mn)As films at high temperatures

    Science.gov (United States)

    Wang, Hailong; Ma, Jialin; Yu, Xueze; Yu, Zhifeng; Zhao, Jianhua

    2017-01-01

    The electric-field effects on the magnetism in perpendicularly magnetized (Ga,Mn)As films at high temperatures have been investigated. An electric-field as high as 0.6 V nm-1 is applied by utilizing a solid-state dielectric Al2O3 film as a gate insulator. The coercive field, saturation magnetization and magnetic anisotropy have been clearly changed by the gate electric-field, which are detected via the anomalous Hall effect. In terms of the Curie temperature, a variation of about 3 K is observed as determined by the temperature derivative of the sheet resistance. In addition, electrical switching of the magnetization assisted by a fixed external magnetic field at 120 K is demonstrated, employing the gate-controlled coercive field. The above experimental results have been attributed to the gate voltage modulation of the hole density in (Ga,Mn)As films, since the ferromagnetism in (Ga,Mn)As is carrier-mediated. The limited modulation magnitude of magnetism is found to result from the strong charge screening effect introduced by the high hole concentration up to 1.10  ×  1021 cm-3, while the variation of the hole density is only about 1.16  ×  1020 cm-3.

  11. Three-Phase High-Power and Zero-Current-Switching OBC for Plug-In Electric Vehicles

    Directory of Open Access Journals (Sweden)

    Cheng-Shan Wang

    2015-06-01

    Full Text Available In this paper, an interleaved high-power zero-current-switching (ZCS onboard charger (OBC based on the three-phase single-switch buck rectifier is proposed for application to plug-in electric vehicles (EVs. The multi-resonant structure is used to achieve high efficiency and high power density, which are necessary to reduce the volume and weight of the OBC. This study focuses on the border conditions of ZCS converting with a battery load, which means the variation ranges of the output voltage and current are very large. Furthermore, a novel hybrid control method combining pulse frequency modulation (PFM and pulse width modulation (PWM together is presented to ensure a driving frequency higher than 10 kHz, and this will reduce the unexpected inner resonant power flow and decrease the total harmonic distortion (THD of the input current under a light load at the end of the charging process. Finally, a prototype is established, and experiments are carried out. According to the experimental results, the conversion efficiency is higher than 93.5%, the THD about 4.3% and power factor (PF 0.98 under the maximum power output condition. Besides, a three-stage charging process is also carried out the experimental platform.

  12. Variable reluctance switch avoids contact corrosion and contact bounce

    Science.gov (United States)

    Watson, P. C.

    1967-01-01

    Variable reluctance switch avoids contact corrosion and bounce in a hostile environment. It consists of a wire-wound magnetic core and moveable bridge piece that alters the core flux pattern to produce an electrical output useful for switching control media.

  13. Electric vehicle system for charging and supplying electrical power

    Science.gov (United States)

    Su, Gui Jia

    2010-06-08

    A power system that provides power between an energy storage device, an external charging-source/load, an onboard electrical power generator, and a vehicle drive shaft. The power system has at least one energy storage device electrically connected across a dc bus, at least one filter capacitor leg having at least one filter capacitor electrically connected across the dc bus, at least one power inverter/converter electrically connected across the dc bus, and at least one multiphase motor/generator having stator windings electrically connected at one end to form a neutral point and electrically connected on the other end to one of the power inverter/converters. A charging-sourcing selection socket is electrically connected to the neutral points and the external charging-source/load. At least one electronics controller is electrically connected to the charging-sourcing selection socket and at least one power inverter/converter. The switch legs in each of the inverter/converters selected by the charging-source/load socket collectively function as a single switch leg. The motor/generators function as an inductor.

  14. On the Suitability of Interleaved Switched Capacitor Converter as an Interface for Electric Vehicle Dual Energy Storage Systems

    Energy Technology Data Exchange (ETDEWEB)

    Amjadi, Zahra; Williamson, Sheldon

    2010-09-15

    This paper presents the analysis and novel hybrid controller design for an interleaved 2-quadrant switched capacitor (SC) bidirectional DC/DC converter for a hybrid electric vehicle (HEV) dual energy storage system. The designed novel control strategy enables simpler dynamics compared to a standard buck converter with input filter, good regulation capability, low EMI, lower source current ripple, ease of control, and continuous input current waveform in both buck as well as boost modes of operation.

  15. EDITORIAL: Molecular switches at surfaces Molecular switches at surfaces

    Science.gov (United States)

    Weinelt, Martin; von Oppen, Felix

    2012-10-01

    In nature, molecules exploit interaction with their environment to realize complex functionalities on the nanometer length scale. Physical, chemical and/or biological specificity is frequently achieved by the switching of molecules between microscopically different states. Paradigmatic examples are the energy production in proton pumps of bacteria or the signal conversion in human vision, which rely on switching molecules between different configurations or conformations by external stimuli. The remarkable reproducibility and unparalleled fatigue resistance of these natural processes makes it highly desirable to emulate nature and develop artificial systems with molecular functionalities. A promising avenue towards this goal is to anchor the molecular switches at surfaces, offering new pathways to control their functional properties, to apply electrical contacts, or to integrate switches into larger systems. Anchoring at surfaces allows one to access the full range from individual molecular switches to self-assembled monolayers of well-defined geometry and to customize the coupling between molecules and substrate or between adsorbed molecules. Progress in this field requires both synthesis and preparation of appropriate molecular systems and control over suitable external stimuli, such as light, heat, or electrical currents. To optimize switching and generate function, it is essential to unravel the geometric structure, the electronic properties and the dynamic interactions of the molecular switches on surfaces. This special section, Molecular Switches at Surfaces, collects 17 contributions describing different aspects of this research field. They analyze elementary processes, both in single molecules and in ensembles of molecules, which involve molecular switching and concomitant changes of optical, electronic, or magnetic properties. Two topical reviews summarize the current status, including both challenges and achievements in the field of molecular switches on

  16. A numerical simulation model of valence-change-based resistive switching

    OpenAIRE

    Marchewka, Astrid

    2017-01-01

    Due to their superior scalability and performance, nanoscale resistive switches based on the valence-change mechanism are considered promising candidates for future nonvolatile memory and logic applications. These devices are metal-oxide-metal structures that can be reversibly switched between different resistance states by electrical signals. Typically, they contain one Schottky-like and one ohmic-like metal-oxide contact and exhibit bipolar switching. The switching mechanism and the initial...

  17. Photo-stimulated resistive switching of ZnO nanorods

    International Nuclear Information System (INIS)

    Park, Jinjoo; Lee, Seunghyup; Yong, Kijung

    2012-01-01

    Resistive switching memory devices are promising candidates for emerging memory technologies because they yield outstanding device performance. Storage mechanisms for achieving high-density memory applications have been developed; however, so far many of them exhibit typical resistive switching behavior from the limited controlling conditions. In this study, we introduce photons as an unconventional stimulus for activating resistive switching behaviors. First, we compare the resistive switching behavior in light and dark conditions to describe how resistive switching memories can benefit from photons. Second, we drive the switching of resistance not by the electrical stimulus but only by the modulation of photon. ZnO nanorods were employed as a model system to demonstrate photo-stimulated resistive switching in high-surface-area nanomaterials, in which photo-driven surface states strongly affect their photoconductivity and resistance states. (paper)

  18. Streamer model for high voltage water switches

    International Nuclear Information System (INIS)

    Sazama, F.J.; Kenyon, V.L. III

    1979-01-01

    An electrical switch model for high voltage water switches has been developed which predicts streamer-switching effects that correlate well with water-switch data from Casino over the past four years and with switch data from recent Aurora/AMP experiments. Preclosure rounding and postclosure resistive damping of pulseforming line voltage waveforms are explained in terms of spatially-extensive, capacitive-coupling of the conducting streamers as they propagate across the gap and in terms of time-dependent streamer resistance and inductance. The arc resistance of the Casino water switch and of a gas switch under test on Casino was determined by computer fit to be 0.5 +- 0.1 ohms and 0.3 +- 0.06 ohms respectively, during the time of peak current in the power pulse. Energy lost in the water switch during the first pulse is 18% of that stored in the pulseforming line while similar energy lost in the gas switch is 11%. The model is described, computer transient analyses are compared with observed water and gas switch data and the results - switch resistance, inductance and energy loss during the primary power pulse - are presented

  19. High-speed 2 × 2 silicon-based electro-optic switch with nanosecond switch time

    International Nuclear Information System (INIS)

    Xue-Jun, Xu; Shao-Wu, Chen; Hai-Hua, Xu; Yang, Sun; Yu-De, Yu; Jin-Zhong, Yu; Qi-Ming, Wang

    2009-01-01

    A 2 × 2 electro-optic switch is experimentally demonstrated using the optical structure of a Mach–Zehnder interferometer (MZI) based on a submicron rib waveguide and the electrical structure of a PIN diode on silicon-on-insulator (SOI). The switch behaviour is achieved through the plasma dispersion effect of silicon. The device has a modulation arm of 1 mm in length and cross-section of 400 nm×340 nm. The measurement results show that the switch has a V π L π figure of merit of 0.145 V·cm and the extinction ratios of two output ports and cross talk are 40 dB, 28 dB and −28 dB, respectively. A 3 dB modulation bandwidth of 90 MHz and a switch time of 6.8 ns for the rise edge and 2.7 ns for the fall edge are also demonstrated

  20. A Piezoelectric Cryogenic Heat Switch

    Science.gov (United States)

    Jahromi, Amir E.; Sullivan, Dan F.

    2014-01-01

    We have measured the thermal conductance of a mechanical heat switch actuated by a piezoelectric positioner, the PZHS (PieZo electric Heat Switch), at cryogenic temperatures. The thermal conductance of the PZHS was measured between 4 K and 10 K, and on/off conductance ratios greater than 100 were achieved when the positioner applied its maximum force of 8 N. We discuss the advantages of using this system in cryogenic applications, and estimate the ultimate performance of an optimized PZHS.

  1. Mathematical modeling of a passively Q-switched diode laser

    International Nuclear Information System (INIS)

    Abdul Ghani, B.; Hammadi, M.

    2009-11-01

    A mathematical model describing the dynamic emission of the intracavity frequency doubling (IFD) of a gain-switched InGaAs/GaAs/KTP and a gain-switched mode-locked two-sections tapered ridge-waveguide InGaAs/GaAs diode laser has been presented. The IFD of a gain-switched and a gain-switched mode-locked two-sections diode laser is modeled where one section is electrically pumped to proved gain while the second section is unpumped (reverse biased) to provide a saturable absorber. (author)

  2. Modeling spot markets for electricity and pricing electricity derivatives

    Science.gov (United States)

    Ning, Yumei

    Spot prices for electricity have been very volatile with dramatic price spikes occurring in restructured market. The task of forecasting electricity prices and managing price risk presents a new challenge for market players. The objectives of this dissertation are: (1) to develop a stochastic model of price behavior and predict price spikes; (2) to examine the effect of weather forecasts on forecasted prices; (3) to price electricity options and value generation capacity. The volatile behavior of prices can be represented by a stochastic regime-switching model. In the model, the means of the high-price and low-price regimes and the probabilities of switching from one regime to the other are specified as functions of daily peak load. The probability of switching to the high-price regime is positively related to load, but is still not high enough at the highest loads to predict price spikes accurately. An application of this model shows how the structure of the Pennsylvania-New Jersey-Maryland market changed when market-based offers were allowed, resulting in higher price spikes. An ARIMA model including temperature, seasonal, and weekly effects is estimated to forecast daily peak load. Forecasts of load under different assumptions about weather patterns are used to predict changes of price behavior given the regime-switching model of prices. Results show that the range of temperature forecasts from a normal summer to an extremely warm summer cause relatively small increases in temperature (+1.5%) and load (+3.0%). In contrast, the increases in prices are large (+20%). The conclusion is that the seasonal outlook forecasts provided by NOAA are potentially valuable for predicting prices in electricity markets. The traditional option models, based on Geometric Brownian Motion are not appropriate for electricity prices. An option model using the regime-switching framework is developed to value a European call option. The model includes volatility risk and allows changes

  3. The phenomenon of voltage controlled switching in disordered superconductors

    International Nuclear Information System (INIS)

    Ghosh, Sanjib; De Munshi, D

    2014-01-01

    The superconductor-to-insulator transition (SIT) is a phenomenon occurring in highly disordered superconductors and may be useful in the development of superconducting switches. The SIT has been demonstrated to be induced by different external parameters: temperature, magnetic field, electric field, etc. However, the electric field induced SIT (ESIT), which has been experimentally demonstrated for some specific materials, holds particular promise for practical device development. Here, we demonstrate, from theoretical considerations, the occurrence of the ESIT. We also propose a general switching device architecture using the ESIT and study some of its universal behavior, such as the effects of sample size, disorder strength and temperature on the switching action. This work provides a general framework for the development of such a device. (paper)

  4. Optical fiber switch

    Science.gov (United States)

    Early, James W.; Lester, Charles S.

    2002-01-01

    Optical fiber switches operated by electrical activation of at least one laser light modulator through which laser light is directed into at least one polarizer are used for the sequential transport of laser light from a single laser into a plurality of optical fibers. In one embodiment of the invention, laser light from a single excitation laser is sequentially transported to a plurality of optical fibers which in turn transport the laser light to separate individual remotely located laser fuel ignitors. The invention can be operated electro-optically with no need for any mechanical or moving parts, or, alternatively, can be operated electro-mechanically. The invention can be used to switch either pulsed or continuous wave laser light.

  5. High-speed electro-optic switch with -80 dB crosstalk

    Science.gov (United States)

    Pan, J. J.; Su, W. H.; Xu, J. Y.; Grove, C. H.

    1992-01-01

    Special device modeling, design and layout, and precision processing controls were employed to fabricate new balanced-bridge 2x2 and 4x4 switches on X-cut, Y-propagation LiNbO3 substrate using Ti indiffused optical waveguides. The best of these devices achieved extinction ratio and crosstalk isolation of better than 93 dB electrically (46.5 dB optically). The new switches demonstrate good reproducibility with electrical crosstalk less than -80 dB.

  6. Delayed switching applied to memristor neural networks

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Frank Z.; Yang Xiao; Lim Guan [Future Computing Group, School of Computing, University of Kent, Canterbury (United Kingdom); Helian Na [School of Computer Science, University of Hertfordshire, Hatfield (United Kingdom); Wu Sining [Xyratex, Havant (United Kingdom); Guo Yike [Department of Computing, Imperial College, London (United Kingdom); Rashid, Md Mamunur [CERN, Geneva (Switzerland)

    2012-04-01

    Magnetic flux and electric charge are linked in a memristor. We reported recently that a memristor has a peculiar effect in which the switching takes place with a time delay because a memristor possesses a certain inertia. This effect was named the ''delayed switching effect.'' In this work, we elaborate on the importance of delayed switching in a brain-like computer using memristor neural networks. The effect is used to control the switching of a memristor synapse between two neurons that fire together (the Hebbian rule). A theoretical formula is found, and the design is verified by a simulation. We have also built an experimental setup consisting of electronic memristive synapses and electronic neurons.

  7. Delayed switching applied to memristor neural networks

    International Nuclear Information System (INIS)

    Wang, Frank Z.; Yang Xiao; Lim Guan; Helian Na; Wu Sining; Guo Yike; Rashid, Md Mamunur

    2012-01-01

    Magnetic flux and electric charge are linked in a memristor. We reported recently that a memristor has a peculiar effect in which the switching takes place with a time delay because a memristor possesses a certain inertia. This effect was named the ''delayed switching effect.'' In this work, we elaborate on the importance of delayed switching in a brain-like computer using memristor neural networks. The effect is used to control the switching of a memristor synapse between two neurons that fire together (the Hebbian rule). A theoretical formula is found, and the design is verified by a simulation. We have also built an experimental setup consisting of electronic memristive synapses and electronic neurons.

  8. High frequency modulation circuits based on photoconductive wide bandgap switches

    Science.gov (United States)

    Sampayan, Stephen

    2018-02-13

    Methods, systems, and devices for high voltage and/or high frequency modulation. In one aspect, an optoelectronic modulation system includes an array of two or more photoconductive switch units each including a wide bandgap photoconductive material coupled between a first electrode and a second electrode, a light source optically coupled to the WBGP material of each photoconductive switch unit via a light path, in which the light path splits into multiple light paths to optically interface with each WBGP material, such that a time delay of emitted light exists along each subsequent split light path, and in which the WBGP material conducts an electrical signal when a light signal is transmitted to the WBGP material, and an output to transmit the electrical signal conducted by each photoconductive switch unit. The time delay of the photons emitted through the light path is substantially equivalent to the time delay of the electrical signal.

  9. Method and device for current driven electric energy conversion

    DEFF Research Database (Denmark)

    2012-01-01

    Device comprising an electric power converter circuit for converting electric energy. The converter circuit comprises a switch arrangement with two or more controllable electric switches connected in a switching configuration and controlled so as to provide a current drive of electric energy from...... configurations such as half bridge buck, full bridge buck, half bridge boost, or full bridge boost. A current driven conversion is advantageous for high efficient energy conversion from current sources such as solar cells or where a voltage source is connected through long cables, e.g. powerline cables for long...... an associated electric source connected to a set of input terminals. This is obtained by the two or more electric swiches being connected and controlled to short-circuit the input terminals during a part of a switching period. Further, a low pass filter with a capacitor and an inductor are provided to low pass...

  10. Optical packet switching in HPC : an analysis of applications performance

    NARCIS (Netherlands)

    Meyer, Hugo; Sancho, Jose Carlos; Mrdakovic, Milica; Miao, Wang; Calabretta, Nicola

    2018-01-01

    Optical Packet Switches (OPS) could provide the needed low latency transmissions in today large data centers. OPS can deliver lower latency and higher bandwidth than traditional electrical switches. These features are needed for parallel High Performance Computing (HPC) applications. For this

  11. Impact of electrically formed interfacial layer and improved memory characteristics of IrOx/high-κx/W structures containing AlOx, GdOx, HfOx, and TaOx switching materials.

    Science.gov (United States)

    Prakash, Amit; Maikap, Siddheswar; Banerjee, Writam; Jana, Debanjan; Lai, Chao-Sung

    2013-09-06

    Improved switching characteristics were obtained from high-κ oxides AlOx, GdOx, HfOx, and TaOx in IrOx/high-κx/W structures because of a layer that formed at the IrOx/high-κx interface under external positive bias. The surface roughness and morphology of the bottom electrode in these devices were observed by atomic force microscopy. Device size was investigated using high-resolution transmission electron microscopy. More than 100 repeatable consecutive switching cycles were observed for positive-formatted memory devices compared with that of the negative-formatted devices (only five unstable cycles) because it contained an electrically formed interfacial layer that controlled 'SET/RESET' current overshoot. This phenomenon was independent of the switching material in the device. The electrically formed oxygen-rich interfacial layer at the IrOx/high-κx interface improved switching in both via-hole and cross-point structures. The switching mechanism was attributed to filamentary conduction and oxygen ion migration. Using the positive-formatted design approach, cross-point memory in an IrOx/AlOx/W structure was fabricated. This cross-point memory exhibited forming-free, uniform switching for >1,000 consecutive dc cycles with a small voltage/current operation of ±2 V/200 μA and high yield of >95% switchable with a large resistance ratio of >100. These properties make this cross-point memory particularly promising for high-density applications. Furthermore, this memory device also showed multilevel capability with a switching current as low as 10 μA and a RESET current of 137 μA, good pulse read endurance of each level (>105 cycles), and data retention of >104 s at a low current compliance of 50 μA at 85°C. Our improvement of the switching characteristics of this resistive memory device will aid in the design of memory stacks for practical applications.

  12. Operation of a homeostatic sleep switch.

    Science.gov (United States)

    Pimentel, Diogo; Donlea, Jeffrey M; Talbot, Clifford B; Song, Seoho M; Thurston, Alexander J F; Miesenböck, Gero

    2016-08-18

    Sleep disconnects animals from the external world, at considerable risks and costs that must be offset by a vital benefit. Insight into this mysterious benefit will come from understanding sleep homeostasis: to monitor sleep need, an internal bookkeeper must track physiological changes that are linked to the core function of sleep. In Drosophila, a crucial component of the machinery for sleep homeostasis is a cluster of neurons innervating the dorsal fan-shaped body (dFB) of the central complex. Artificial activation of these cells induces sleep, whereas reductions in excitability cause insomnia. dFB neurons in sleep-deprived flies tend to be electrically active, with high input resistances and long membrane time constants, while neurons in rested flies tend to be electrically silent. Correlative evidence thus supports the simple view that homeostatic sleep control works by switching sleep-promoting neurons between active and quiescent states. Here we demonstrate state switching by dFB neurons, identify dopamine as a neuromodulator that operates the switch, and delineate the switching mechanism. Arousing dopamine caused transient hyperpolarization of dFB neurons within tens of milliseconds and lasting excitability suppression within minutes. Both effects were transduced by Dop1R2 receptors and mediated by potassium conductances. The switch to electrical silence involved the downregulation of voltage-gated A-type currents carried by Shaker and Shab, and the upregulation of voltage-independent leak currents through a two-pore-domain potassium channel that we term Sandman. Sandman is encoded by the CG8713 gene and translocates to the plasma membrane in response to dopamine. dFB-restricted interference with the expression of Shaker or Sandman decreased or increased sleep, respectively, by slowing the repetitive discharge of dFB neurons in the ON state or blocking their entry into the OFF state. Biophysical changes in a small population of neurons are thus linked to the

  13. Enhanced Thermo-Optical Switching of Paraffin-Wax Composite Spots under Laser Heating.

    Science.gov (United States)

    Said, Asmaa; Salah, Abeer; Fattah, Gamal Abdel

    2017-05-12

    Thermo-optical switches are of particular significance in communications networks where increasingly high switching speeds are required. Phase change materials (PCMs), in particular those based on paraffin wax, provide wealth of exciting applications with unusual thermally-induced switching properties, only limited by paraffin's rather low thermal conductivity. In this paper, the use of different carbon fillers as thermal conductivity enhancers for paraffin has been investigated, and a novel structure based on spot of paraffin wax as a thermo-optic switch is presented. Thermo-optical switching parameters are enhanced with the addition of graphite and graphene, due to the extreme thermal conductivity of the carbon fillers. Differential Scanning Calorimetry (DSC) and Scanning electron microscope (SEM) are performed on paraffin wax composites, and specific heat capacities are calculated based on DSC measurements. Thermo-optical switching based on transmission is measured as a function of the host concentration under conventional electric heating and laser heating of paraffin-carbon fillers composites. Further enhancements in thermo-optical switching parameters are studied under Nd:YAG laser heating. This novel structure can be used in future networks with huge bandwidth requirements and electric noise free remote aerial laser switching applications.

  14. Wide Bandgap Extrinsic Photoconductive Switches

    Energy Technology Data Exchange (ETDEWEB)

    Sullivan, James S. [Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)

    2013-07-03

    Semi-insulating Gallium Nitride, 4H and 6H Silicon Carbide are attractive materials for compact, high voltage, extrinsic, photoconductive switches due to their wide bandgap, high dark resistance, high critical electric field strength and high electron saturation velocity. These wide bandgap semiconductors are made semi-insulating by the addition of vanadium (4H and 6HSiC) and iron (2H-GaN) impurities that form deep acceptors. These deep acceptors trap electrons donated from shallow donor impurities. The electrons can be optically excited from these deep acceptor levels into the conduction band to transition the wide bandgap semiconductor materials from a semi-insulating to a conducting state. Extrinsic photoconductive switches with opposing electrodes have been constructed using vanadium compensated 6H-SiC and iron compensated 2H-GaN. These extrinsic photoconductive switches were tested at high voltage and high power to determine if they could be successfully used as the closing switch in compact medical accelerators.

  15. Intrinsic nanofilamentation in resistive switching

    KAUST Repository

    Wu, Xing

    2013-03-15

    Resistive switching materials are promising candidates for nonvolatile data storage and reconfiguration of electronic applications. Intensive studies have been carried out on sandwiched metal-insulator-metal structures to achieve high density on-chip circuitry and non-volatile memory storage. Here, we provide insight into the mechanisms that govern highly reproducible controlled resistive switching via a nanofilament by using an asymmetric metal-insulator-semiconductor structure. In-situ transmission electron microscopy is used to study in real-time the physical structure and analyze the chemical composition of the nanofilament dynamically during resistive switching. Electrical stressing using an external voltage was applied by a tungsten tip to the nanosized devices having hafnium oxide (HfO2) as the insulator layer. The formation and rupture of the nanofilaments result in up to three orders of magnitude change in the current flowing through the dielectric during the switching event. Oxygen vacancies and metal atoms from the anode constitute the chemistry of the nanofilament.

  16. Multi-polar resistance switching and memory effect in copper phthalocyanine junctions

    International Nuclear Information System (INIS)

    Qiao Shi-Zhu; Kang Shi-Shou; Li Qiang; Zhong Hai; Kang Yun; Yu Shu-Yun; Han Guang-Bing; Yan Shi-Shen; Mei Liang-Mo; Qin Yu-Feng

    2014-01-01

    Copper phthalocyanine junctions, fabricated by magnetron sputtering and evaporating methods, show multi-polar (unipolar and bipolar) resistance switching and the memory effect. The multi-polar resistance switching has not been observed simultaneously in one organic material before. With both electrodes being cobalt, the unipolar resistance switching is universal. The high resistance state is switched to the low resistance state when the bias reaches the set voltage. Generally, the set voltage increases with the thickness of copper phthalocyanine and decreases with increasing dwell time of bias. Moreover, the low resistance state could be switched to the high resistance state by absorbing the phonon energy. The stability of the low resistance state could be tuned by different electrodes. In Au/copper phthalocyanine/Co system, the low resistance state is far more stable, and the bipolar resistance switching is found. Temperature dependence of electrical transport measurements demonstrates that there are no obvious differences in the electrical transport mechanism before and after the resistance switching. They fit quite well with Mott variable range hopping theory. The effect of Al 2 O 3 on the resistance switching is excluded by control experiments. The holes trapping and detrapping in copper phthalocyanine layer are responsible for the resistance switching, and the interfacial effect between electrodes and copper phthalocyanine layer affects the memory effect. (interdisciplinary physics and related areas of science and technology)

  17. CRADA Final Report for CRADA Number ORNL98-0521 : Development of an Electric Bus Inverter Based on ORNL Auxiliary Resonant Tank (ART) Soft-Switching Technology; TOPICAL

    International Nuclear Information System (INIS)

    Ayers, C.W.

    2001-01-01

    The Power Electronics and Electric Machinery Research Center (PEEMRC) of Oak Ridge National Laboratory (ORNL) has for many years been developing technologies for power converters for motor drives and many other applications. Some of the research goals are to improve efficiency and reduce audible and electromagnetic interference noise generation for inverters and the driven loads. The converters are being required to produce more power with reduced weight and volume, which requires improvements in heat removal from the electronics, as well as improved circuit designs that have fewer electrical losses. PEEMRC has recently developed and patented a soft-switching inverter topology called an Auxiliary Resonant Tank (ART), and this design has been tested and proven at ORNL using a 10-kW laboratory prototype. The objective of this project was to develop, test, and install the ART inverter technology in an electric transit bus with the final goal of evaluating performance of the ORNL inverter under field conditions in a vehicle. A scaled-up inverter with the capacity to drive a 22-e bus was built based on the 10-kW ORNL laboratory prototype ART soft-switching inverter. Most (if not all) commercially available inverters for traction drive and other applications use hard-switching inverters. A Cooperative Research and Development Agreement was established with the Chattanooga Area Regional Transit Authority (CARTA), the Electric Transit Vehicle Institute (ETVI), and Advanced Vehicle Systems (AVS), all of Chattanooga, along with ORNL. CARTA, which maintains and operates the public transit system in Chattanooga, provided an area for testing the vehicle alongside other similar vehicles in the normal operating environment. ETVI offers capabilities in standardized testing and reporting and also provides exposure in the electric transit vehicle arena for ORNL's technologies. The third Chattanooga partner, (AVS) manufactures all-electric and hybrid electric transit buses using

  18. Nanoscale mechanical switching of ferroelectric polarization via flexoelectricity

    Energy Technology Data Exchange (ETDEWEB)

    Gu, Yijia; Hong, Zijian; Britson, Jason; Chen, Long-Qing [Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802 (United States)

    2015-01-12

    Flexoelectric coefficient is a fourth-rank tensor arising from the coupling between strain gradient and electric polarization and thus exists in all crystals. It is generally ignored for macroscopic crystals due to its small magnitude. However, at the nanoscale, flexoelectric contributions may become significant and can potentially be utilized for device applications. Using the phase-field method, we study the mechanical switching of electric polarization in ferroelectric thin films by a strain gradient created via an atomic force microscope tip. Our simulation results show good agreement with existing experimental observations. We examine the competition between the piezoelectric and flexoelectric effects and provide an understanding of the role of flexoelectricity in the polarization switching. Also, by changing the pressure and film thickness, we reveal that the flexoelectric field at the film bottom can be used as a criterion to determine whether domain switching may happen under a mechanical force.

  19. Nano- and micro-electromechanical switch dynamics

    International Nuclear Information System (INIS)

    Pulskamp, Jeffrey S; Proie, Robert M; Polcawich, Ronald G

    2013-01-01

    This paper reports theoretical analysis and experimental results on the dynamics of piezoelectric MEMS mechanical logic relays. The multiple degree of freedom analytical model, based on modal decomposition, utilizes modal parameters obtained from finite element analysis and an analytical model of piezoelectric actuation. The model accounts for exact device geometry, damping, drive waveform variables, and high electric field piezoelectric nonlinearity. The piezoelectrically excited modal force is calculated directly and provides insight into design optimization for switching speed. The model accurately predicts the propagation delay dependence on actuation voltage of mechanically distinct relay designs. The model explains the observed discrepancies in switching speed of these devices relative to single degree of freedom switching speed models and suggests the strong potential for improved switching speed performance in relays designed for mechanical logic and RF circuits through the exploitation of higher order vibrational modes. (paper)

  20. A solid-state dielectric elastomer switch for soft logic

    Energy Technology Data Exchange (ETDEWEB)

    Chau, Nixon [Biomimetics Laboratory, Auckland Bioengineering Institute, The University of Auckland, Level 6, 70 Symonds Street, Auckland 1010 (New Zealand); Slipher, Geoffrey A., E-mail: geoffrey.a.slipher.civ@mail.mil; Mrozek, Randy A. [U.S. Army Research Laboratory, 2800 Powder Mill Road, Adelphi, Maryland 20783 (United States); O' Brien, Benjamin M. [StretchSense, Ltd., 27 Walls Rd., Penrose, Auckland 1061 (New Zealand); Anderson, Iain A. [Biomimetics Laboratory, Auckland Bioengineering Institute, The University of Auckland, Level 6, 70 Symonds Street, Auckland 1010 (New Zealand); StretchSense, Ltd., 27 Walls Rd., Penrose, Auckland 1061 (New Zealand); Department of Engineering Science, School of Engineering, The University of Auckland, Level 3, 70 Symonds Street, Auckland 1010 (New Zealand)

    2016-03-07

    In this paper, we describe a stretchable solid-state electronic switching material that operates at high voltage potentials, as well as a switch material benchmarking technique that utilizes a modular dielectric elastomer (artificial muscle) ring oscillator. The solid-state switching material was integrated into our oscillator, which self-started after 16 s and performed 5 oscillations at a frequency of 1.05 Hz with 3.25 kV DC input. Our materials-by-design approach for the nickel filled polydimethylsiloxane based switch has resulted in significant improvements over previous carbon grease-based switches in four key areas, namely, sharpness of switching behavior upon applied stretch, magnitude of electrical resistance change, ease of manufacture, and production rate. Switch lifetime was demonstrated to be in the range of tens to hundreds of cycles with the current process. An interesting and potentially useful strain-based switching hysteresis behavior is also presented.

  1. A solid-state dielectric elastomer switch for soft logic

    International Nuclear Information System (INIS)

    Chau, Nixon; Slipher, Geoffrey A.; Mrozek, Randy A.; O'Brien, Benjamin M.; Anderson, Iain A.

    2016-01-01

    In this paper, we describe a stretchable solid-state electronic switching material that operates at high voltage potentials, as well as a switch material benchmarking technique that utilizes a modular dielectric elastomer (artificial muscle) ring oscillator. The solid-state switching material was integrated into our oscillator, which self-started after 16 s and performed 5 oscillations at a frequency of 1.05 Hz with 3.25 kV DC input. Our materials-by-design approach for the nickel filled polydimethylsiloxane based switch has resulted in significant improvements over previous carbon grease-based switches in four key areas, namely, sharpness of switching behavior upon applied stretch, magnitude of electrical resistance change, ease of manufacture, and production rate. Switch lifetime was demonstrated to be in the range of tens to hundreds of cycles with the current process. An interesting and potentially useful strain-based switching hysteresis behavior is also presented.

  2. ELECTROMAGNETIC AND THERMAL SIMULATIONS FOR THE SWITCH REGION OF A COMPACT PROTON ACCELERATOR

    International Nuclear Information System (INIS)

    Wang, L; Caporaso, G J; Sullivan, J S

    2007-01-01

    A compact proton accelerator for medical applications is being developed at Lawrence Livermore National Laboratory. The accelerator architecture is based on the dielectric wall accelerator (DWA) concept. One critical area to consider is the switch region. Electric field simulations and thermal calculations of the switch area were performed to help determine the operating limits of rmed SiC switches. Different geometries were considered for the field simulation including the shape of the thin Indium solder meniscus between the electrodes and SiC. Electric field simulations were also utilized to demonstrate how the field stress could be reduced. Both transient and steady steady-state thermal simulations were analyzed to find the average power capability of the switches

  3. Complementary resistive switching in BaTiO{sub 3}/NiO bilayer with opposite switching polarities

    Energy Technology Data Exchange (ETDEWEB)

    Li, Shuo [State Key Laboratory Cultivation Base for Nonmetal Composites and Functional Materials, Southwest University of Science and Technology, Mianyang 621010 (China); Institut d’Electronique de Micro-électronique et de Nanotechnologie (IEMN), CNRS, Université des Sciences et Technologies de Lille, avenue Poincaré, BP 60069, 59652, Villeneuve d’Ascq cedex (France); Wei, Xianhua, E-mail: weixianhua@swust.edu.cn [State Key Laboratory Cultivation Base for Nonmetal Composites and Functional Materials, Southwest University of Science and Technology, Mianyang 621010 (China); Lei, Yao [State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronics Science and Technology of China, Chengdu 610054 (China); Yuan, Xincai [State Key Laboratory Cultivation Base for Nonmetal Composites and Functional Materials, Southwest University of Science and Technology, Mianyang 621010 (China); Zeng, Huizhong [State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronics Science and Technology of China, Chengdu 610054 (China)

    2016-12-15

    Graphical abstract: Au/BaTiO{sub 3}/NiO/Pt bilayer device shows complementary resistive switching (CRS) without electroforming which is mainly ascribed to anti-serial stack of two RRAM cells with bipolar behaviors. - Highlights: • Complementary resistive switching (CRS) has been investigated in Au/BaTiO{sub 3}/NiO/Pt by stacking the two elements with different switching types. • The realization of complementary resistive switching (CRS) is mainly ascribed to the anti-serial stack of two RRAM cells with bipolar behaviors. • Complementary resistive switching (CRS) in bilayer is effective to solve the sneak current problem briefly and economically. - Abstract: Resistive switching behaviors have been investigated in the Au/BaTiO{sub 3}/NiO/Pt structure by stacking the two elements with different switching types. The conducting atomic force microscope measurements on BaTiO{sub 3} thin films and NiO thin films suggest that with the same active resistive switching region, the switching polarities in the two semiconductors are opposite to each other. It is in agreement with the bipolar hysteresis I–V curves with opposite switching polarities for single-layer devices. The bilayer devices show complementary resistive switching (CRS) without electroforming and unipolar resistive switching (URS) after electroforming. The coexistence of CRS and URS is mainly ascribed to the co-effect of electric field and Joule heating mechanisms, indicating that changeable of resistance in this device is dominated by the redistribution of oxygen vacancies in BaTiO{sub 3} and the formation, disruption, restoration of conducting filaments in NiO. CRS in bilayer with opposite switching polarities is effective to solve the sneak current without the introduction of any selector elements or an additional metal electrode.

  4. Electric drives

    CERN Document Server

    Boldea, Ion

    2005-01-01

    ENERGY CONVERSION IN ELECTRIC DRIVESElectric Drives: A DefinitionApplication Range of Electric DrivesEnergy Savings Pay Off RapidlyGlobal Energy Savings Through PEC DrivesMotor/Mechanical Load MatchMotion/Time Profile MatchLoad Dynamics and StabilityMultiquadrant OperationPerformance IndexesProblemsELECTRIC MOTORS FOR DRIVESElectric Drives: A Typical ConfigurationElectric Motors for DrivesDC Brush MotorsConventional AC MotorsPower Electronic Converter Dependent MotorsEnergy Conversion in Electric Motors/GeneratorsPOWER ELECTRONIC CONVERTERS (PECs) FOR DRIVESPower Electronic Switches (PESs)The

  5. Optical Multidimensional Switching for Data Center Networks

    OpenAIRE

    Kamchevska, Valerija; Galili, Michael; Oxenløwe, Leif Katsuo; Berger, Michael Stübert

    2017-01-01

    Optical switches are known for the ability to provide high bandwidth connectivity at a relatively low power consumption and low latency. Several recent demonstrations on optical data center architectures confirm the potential for introducing all-optical switching within the data center, thus avoiding power hungry optical-electrical-optical conversions at each node. This Ph.D. thesis focuses precisely on the application of optical technologies in data center networks where optics is not only u...

  6. Proceedings of the switched power workshop

    International Nuclear Information System (INIS)

    Fernow, R.C.

    1988-01-01

    These proceedings contain most of the presentations given at a workshop on the current state of research in techniques for switched power acceleration. The proceedings are divided, as was the workshop itself, into two parts. Part 1, contains the latest results from a number of groups active in switched power research. The major topic here is a method for switching externally supplied power onto a transmission line. Advocates for vacuum photodiode switching, solid state switching, gas switching, and synthetic pulse generation are all presented. Other important areas of research described in this section concern: external electrical and laser pulsing systems; the properties of the created electromagnetic pulse; structures used for transporting the electromagnetic pulse to the region where the electron beam is located; and possible applications. Part 2 of the proceedings considers the problem of designing a high brightness electron gun using switched power as the power source. This is an important first step in demonstrating the usefulness of switched power techniques for accelerator physics. In addition such a gun could have immediate practical importance for advanced acceleration studies since the brightness could exceed that of present sources by several orders of magnitude. I would like to take this opportunity to thank Kathleen Tuohy and Patricia Tuttle for their assistance in organizing and running the workshop. Their tireless efforts contribute greatly to a very productive meeting

  7. Instantaneous Switching Processes in Quasi-Linear Circuits

    Directory of Open Access Journals (Sweden)

    Rositsa Angelova

    2004-01-01

    Full Text Available The paper considers instantaneous processes in electrical circuits produced by the stepwise change of the capacitance of the capacitor and the inductance of the inductor and by the switching on and switching off of the circuit. In order to determine the set of electrical circuits, for which it is possible to explicitly obtain the values of the currents and the voltages at the end of the instantaneous process, a classification of the networks with nonlinear elements is introduced in the paper. The instantaneous switching process in the moment t0 is approximated when T->t0 with a sequence of processes in the interval [t0, T]. For quasi-linear inductive and capacitive circuits; we present the type of the system satisfied by the currents and the voltages, the charges, as well as the fluxes in the interval [t0, T]. From this system, after passage to the limit T->t0, we obtain the formulas for the values of the circuits at the end of the instantaneous process. The obtained results are applied for the analysis of particular processes.

  8. Stabilization of a Nb3Sn persistent current switch

    International Nuclear Information System (INIS)

    Urata, M.; Maeda, H.; Nakayama, S.; Yoneda, E.; Oda, Y.; Kumano, T.; Aoki, N.; Tomisaki, T.; Kabashima, S.

    1993-01-01

    A 2000 A class Nb 3 Sn persistent current switch has been successfully fabricated in the Toshiba R and D Center. The Nb tube processed conductor with Cu-10 wt.% Ni matrix has been developed for the switch in the Showa Electric Wire and Cable Co. Ltd. The magnetic instability which was observed in the previous 35 Ω Nb 3 Sn persistent current switch was improved in the present switch. The problem of quench current degradation and flux jump on magnetization, emerged in the previous switch, were confirmed to be solved. In the fast ramp, however, the switch degrades from the calculated results assuming the self field ac loss. In the Nb 3 Sn reaction process, Sn in the bronze diffuses into the Nb tube, which decreases the switch resistance. It was observed by a computer aided micro analysis (CMA) that Ni in the CuNi matrix precipitated on the Nb tube, which slightly reduced the switch resistance. (orig.)

  9. Electric Field Distribution and Switching Impulse Discharge under Shield Ball Surface Scratch Defect in an UHVDC Hall

    Directory of Open Access Journals (Sweden)

    Jianghai Geng

    2018-05-01

    Full Text Available The dimension and surface state of shielding fittings in ultra high voltage direct current (UHVDC converter station valve halls have a great influence on their surface electric field and switching impulse characteristics, which are important parameters confirming the air gap distance in the valve hall. The characteristics of impulse discharge under different lengths, dent degrees and burrs around the scratches of Φ1.3 m shield balls with a 2 m sphere-plane gap length were tested, in the UHVDC testing base of the Hebei Electric Power Research Institute. The discharge characteristics under the influence of the surface scratches of the shield ball were obtained. The results demonstrate that the discharge voltage of sphere-plane gap decreases obviously when there are unpolished scratches on the surface of the shield ball. However, when the scratches are polished, the discharge voltage has no significant impact. At the same time, a 1:1 full-scale impulse test model was established based on the finite element method. The electric field intensity and the space electric field distribution of the shield ball were obtained under the influence of scratches with or without burrs. The results of the simulation show that when the surface of the shield ball is smooth, the electric field distribution around it is even. The electric field intensity on the surface of the shield ball increases obviously when there are burrs around the scratches. When there is no burr around the scratches, the length and depth of the scratches have no obvious effect on its electric field distribution. Meanwhile, calculation results are consistent with test results. The results can provide an important basis for the design and optimization of shielding fittings, and technical support for its localization.

  10. Low prepulse, high power density water dielectric switching

    International Nuclear Information System (INIS)

    Johnson, D.L.; VanDevender, J.P.; Martin, T.H.

    1979-01-01

    Prepulse voltage suppression has proven difficult in high power, high voltage accelerators employing self-breakdown water dielectric switches. A novel and cost effective water switch has been developed at Sandia Laboratories which reduces prepulse voltage by reducing the capacity across the switch. This prepulse suppression switch causes energy formerly stored in the switch capacity and dissipated in the arc to be useful output energy. The switching technique also allows the pulse forming lines to be stacked in parallel and electrically isolated from the load after the line has been discharged. The switch consists of a ground plane, with several holes, inserted between the switch electrodes. The output line switch electrodes extend through the holes and face electrodes on the pulse forming line (PFL). The capacity between the PFL and the output transmission line is reduced by about 80%. The gap spacing between the output line electrode and the hole in the ground plane is adjusted so that breakdown occurs after the main pulse and provides a crow bar between the load and the source. Performance data from the Proto II, Mite and Ripple test facilities are presented

  11. Efficient capture of magnetic microbeads by sequentially switched electroosmotic flow—an experimental study

    International Nuclear Information System (INIS)

    Das, Debarun; Al-Rjoub, Marwan F; Banerjee, Rupak K; Heineman, William R

    2016-01-01

    Magnetophoretic separation is a commonly used immunoassay technique in microfluidic platforms where magnetic microbeads (mMBs) coated with specific epitopes (antibodies) entrap target pathogens by antigen-antibody kinetics. The mMB-cell complexes are then separated from the continuous flow using an external magnetic field. The goal of this study was to design and test a microfluidic device for efficient separation of fluorescence-tagged mMBs driven by electroosmotic flow (EOF) under steady (time invariant) and switched (time varying) electric field conditions. The EOF was driven at electric fields of 100–180 V cm −1 . The mMBs were captured by a neodymium (NdFeB) permanent earth magnet. The capture efficiency ( η c ) of these mMBs was improved by sequential switching of the applied electric field driven-EOF. The fluorescent images of the captured mMBs, obtained using an inverted epifluorescence microscope, were quantified using image processing tools. In steady EOF, induced by constant electric field, the number of captured mMBs decreased by 72.3% when the electric field was increased from 100 V cm −1 to 180 V cm −1 . However, alternating the direction of flow through sequential switching of EOF increased the η c by bringing the escaped mMBs back to the capture zone and increasing their residence time in the area of higher magnetic fields. The average increase in η c was 54.3% for an mMB concentration of 1  ×  10 6 beads ml −1 ( C 1 ) and 41.6% for a concentration of 2  ×  10 6 beads ml −1 ( C 2 ). These improvements were particularly significant at higher electric fields where the η c with switching was, on average, ∼70% more compared to flow without switching. The technique of sequential switching demonstrates an efficient method for capture of mMBs for application in magnetophoretic immunoassay. (paper)

  12. Efficient capture of magnetic microbeads by sequentially switched electroosmotic flow—an experimental study

    Science.gov (United States)

    Das, Debarun; Al-Rjoub, Marwan F.; Heineman, William R.; Banerjee, Rupak K.

    2016-05-01

    Magnetophoretic separation is a commonly used immunoassay technique in microfluidic platforms where magnetic microbeads (mMBs) coated with specific epitopes (antibodies) entrap target pathogens by antigen-antibody kinetics. The mMB-cell complexes are then separated from the continuous flow using an external magnetic field. The goal of this study was to design and test a microfluidic device for efficient separation of fluorescence-tagged mMBs driven by electroosmotic flow (EOF) under steady (time invariant) and switched (time varying) electric field conditions. The EOF was driven at electric fields of 100-180 V cm-1. The mMBs were captured by a neodymium (NdFeB) permanent earth magnet. The capture efficiency (η c) of these mMBs was improved by sequential switching of the applied electric field driven-EOF. The fluorescent images of the captured mMBs, obtained using an inverted epifluorescence microscope, were quantified using image processing tools. In steady EOF, induced by constant electric field, the number of captured mMBs decreased by 72.3% when the electric field was increased from 100 V cm-1 to 180 V cm-1. However, alternating the direction of flow through sequential switching of EOF increased the η c by bringing the escaped mMBs back to the capture zone and increasing their residence time in the area of higher magnetic fields. The average increase in η c was 54.3% for an mMB concentration of 1  ×  106 beads ml-1 (C 1) and 41.6% for a concentration of 2  ×  106 beads ml-1 (C 2). These improvements were particularly significant at higher electric fields where the η c with switching was, on average, ~70% more compared to flow without switching. The technique of sequential switching demonstrates an efficient method for capture of mMBs for application in magnetophoretic immunoassay.

  13. Electronic devices containing switchably conductive silicon oxides as a switching element and methods for production and use thereof

    Science.gov (United States)

    Tour, James M; Yao, Jun; Natelson, Douglas; Zhong, Lin; He, Tao

    2013-11-26

    In various embodiments, electronic devices containing switchably conductive silicon oxide as a switching element are described herein. The electronic devices are two-terminal devices containing a first electrical contact and a second electrical contact in which at least one of the first electrical contact or the second electrical contact is deposed on a substrate to define a gap region therebetween. A switching layer containing a switchably conductive silicon oxide resides in the the gap region between the first electical contact and the second electrical contact. The electronic devices exhibit hysteretic current versus voltage properties, enabling their use in switching and memory applications. Methods for configuring, operating and constructing the electronic devices are also presented herein.

  14. Non-destructive reversible resistive switching in Cr doped Mott insulator Ca2RuO4: Interface vs bulk effects

    Science.gov (United States)

    Shen, Shida; Williamson, Morgan; Cao, Gang; Zhou, Jianshi; Goodenough, John; Tsoi, Maxim

    2017-12-01

    A non-destructive reversible resistive switching is demonstrated in single crystals of Cr-doped Mott insulator Ca2RuO4. An applied electrical bias was shown to reduce the DC resistance of the crystal by as much as 75%. The original resistance of the sample could be restored by applying an electrical bias of opposite polarity. We have studied this resistive switching as a function of the bias strength, applied magnetic field, and temperature. A combination of 2-, 3-, and 4-probe measurements provide a means to distinguish between bulk and interfacial contributions to the switching and suggests that the switching is mostly an interfacial effect. The switching was tentatively attributed to electric-field driven lattice distortions which accompany the impurity-induced Mott transition. This field effect was confirmed by temperature-dependent resistivity measurements which show that the activation energy of this material can be tuned by an applied DC electrical bias. The observed resistance switching can potentially be used for building non-volatile memory devices like resistive random access memory.

  15. Non-destructive reversible resistive switching in Cr doped Mott insulator Ca2RuO4: Interface vs bulk effects

    KAUST Repository

    Shen, Shida

    2017-12-29

    A non-destructive reversible resistive switching is demonstrated in single crystals of Cr-doped Mott insulator Ca2RuO4. An applied electrical bias was shown to reduce the DC resistance of the crystal by as much as 75%. The original resistance of the sample could be restored by applying an electrical bias of opposite polarity. We have studied this resistive switching as a function of the bias strength, applied magnetic field, and temperature. A combination of 2-, 3-, and 4-probe measurements provide a means to distinguish between bulk and interfacial contributions to the switching and suggests that the switching is mostly an interfacial effect. The switching was tentatively attributed to electric-field driven lattice distortions which accompany the impurity-induced Mott transition. This field effect was confirmed by temperature-dependent resistivity measurements which show that the activation energy of this material can be tuned by an applied DC electrical bias. The observed resistance switching can potentially be used for building non-volatile memory devices like resistive random access memory.

  16. Electric Substations

    Data.gov (United States)

    Department of Homeland Security — Substations. Substations are facilities and equipment that switch, transform, or regulate electric voltage. The Substations feature class includes taps, a location...

  17. Electronically commutated serial-parallel switching for motor windings

    Science.gov (United States)

    Hsu, John S [Oak Ridge, TN

    2012-03-27

    A method and a circuit for controlling an ac machine comprises controlling a full bridge network of commutation switches which are connected between a multiphase voltage source and the phase windings to switch the phase windings between a parallel connection and a series connection while providing commutation discharge paths for electrical current resulting from inductance in the phase windings. This provides extra torque for starting a vehicle from lower battery current.

  18. IGBT: a solid state switch

    International Nuclear Information System (INIS)

    Chatroux, D.; Maury, J.; Hennevin, B.

    1993-01-01

    A Copper Vapour Laser Power Supply has been designed using a solid state switch consisting in eighteen Isolated Gate Bipolar Transistors (IGBT), -1200 volts, 400 Amps, each-in parallel. This paper presents the Isolated Gate Bipolar Transistor (IGBTs) replaced in the Power Electronic components evolution, and describes the IGBT conduction mechanism, presents the parallel association of IGBTs, and studies the application of these components to a Copper Vapour Laser Power Supply. The storage capacitor voltage is 820 volts, the peak current of the solid state switch is 17.000 Amps. The switch is connected on the primary of a step-up transformer, followed by a magnetic modulator. The reset of the magnetic modulator is provided by part of the laser reflected energy with a patented circuit. The charging circuit is a resonant circuit with a charge controlled by an IGBT switch. When the switch is open, the inductance energy is free-wheeled by an additional winding and does not extend the charging phase of the storage capacitor. The design allows the storage capacitor voltage to be very well regulated. This circuit is also patented. The electric pulse in the laser has 30.000 Volt peak voltage, 2000 Amp peak current, and is 200 nanoseconds long, for a 200 Watt optical power Copper Vapour Laser

  19. Evidence for thermally assisted threshold switching behavior in nanoscale phase-change memory cells

    International Nuclear Information System (INIS)

    Le Gallo, Manuel; Athmanathan, Aravinthan; Krebs, Daniel; Sebastian, Abu

    2016-01-01

    In spite of decades of research, the details of electrical transport in phase-change materials are still debated. In particular, the so-called threshold switching phenomenon that allows the current density to increase steeply when a sufficiently high voltage is applied is still not well understood, even though there is wide consensus that threshold switching is solely of electronic origin. However, the high thermal efficiency and fast thermal dynamics associated with nanoscale phase-change memory (PCM) devices motivate us to reassess a thermally assisted threshold switching mechanism, at least in these devices. The time/temperature dependence of the threshold switching voltage and current in doped Ge 2 Sb 2 Te 5 nanoscale PCM cells was measured over 6 decades in time at temperatures ranging from 40 °C to 160 °C. We observe a nearly constant threshold switching power across this wide range of operating conditions. We also measured the transient dynamics associated with threshold switching as a function of the applied voltage. By using a field- and temperature-dependent description of the electrical transport combined with a thermal feedback, quantitative agreement with experimental data of the threshold switching dynamics was obtained using realistic physical parameters

  20. Low-temperature DC-contact piezoelectric switch operable in high magnetic fields

    CERN Document Server

    Kaltenbacher, T; Doser, M; Kellerbauer, A; Pribyl, W

    2013-01-01

    A piezoelectric single-pole single-throw (SPST) switch has been developed, since there is no satisfying commercial low-resistance, high current DC-contact RF switch available which is operable at 4.2K and in a high magnetic field of at least 0.5T. This piezoelectric switch shows very low insertion loss of less than -0.1dB within a bandwidth of 100MHz when operated at 4.2K. The switch could also be used to mechanically disconnect and connect electrodes or electrical circuits from one another.

  1. Low-temperature DC-contact piezoelectric switch operable in high magnetic fields

    Energy Technology Data Exchange (ETDEWEB)

    Kaltenbacher, Thomas, E-mail: thomas.kaltenbacher@cern.ch [Physics and Accelerator Departments, CERN, 1211 Geneva 23 (Switzerland); Institute of Electronics, Graz University of Technology, Inffeldgasse 12, 8010 Graz (Austria); Caspers, Fritz; Doser, Michael [Physics and Accelerator Departments, CERN, 1211 Geneva 23 (Switzerland); Kellerbauer, Alban [Max Planck Institute for Nuclear Physics, Saupfercheckweg 1, 69117 Heidelberg (Germany); Pribyl, Wolfgang [Institute of Electronics, Graz University of Technology, Inffeldgasse 12, 8010 Graz (Austria)

    2013-11-21

    A piezoelectric single-pole single-throw (SPST) switch has been developed, since there is no satisfying commercial low-resistance, high current DC-contact RF switch available which is operable at 4.2 K and in a high magnetic field of at least 0.5 T. This piezoelectric switch shows very low insertion loss of less than −0.1 dB within a bandwidth of 100 MHz when operated at 4.2 K. The switch could also be used to mechanically disconnect and connect electrodes or electrical circuits from one another.

  2. Simulation of plasma erosion opening switches

    International Nuclear Information System (INIS)

    Mason, R.J.; Jones, M.E.

    1988-01-01

    The plasma erosion opening switch (PEOS) has been studied with the ANTHEM and ISIS implicit simulation codes. The switch consists of plasma fill injected into a transmission line. The plasma initially shorts out the circuit, but eventually it is removed by self-electrical forces, allowing for the delivery of energy to a load. ANTHEM models the plasma by multiple fluids with electron inertia retained, or by the particle-in-cell (PIC) technique. ISIS is an optimized PIC code. Both codes determine electric and magnetic fields by the implicit moment method. This allows for the study of long time full-switch behavior with simulational zone sizes and time steps that are large compared to a Debye length and plasma period, respectively. Thus, the authors have modeled switch behavior at densities ranging from 5 x 10 11 to 5 x 10 14 electrons/cm -3 over drive pulses ranging from 5 to 250 ns. Here, the magnetic field rose linearly from zero to 0.8 or 3.0 Tesla. Switch gaps spanned from 1.0 to 8.0 cm, and inner radii ranged from 0.5 to 20.0 cm. Opening dynamics is shown to depend sensitively on the assumed electron emission thresholds at the cathode, and on the effective conductivity of the anode. The particle simulations predict broader current channels than the multi-fluid calculations - reasons for this are discussed. The effect of numerical diffusion in implicit simulations is examined. The response to realistic load impedances (10 Ohms for Sandia National Laboratory's PBFA II accelerator) of the opening characteristics is described. Advantages from plasma fill near the load are investigated. The action of preset initial magnetic fields aligned with the power flow, and of trigger magnetic fields for controlled removal of the plasma is discussed

  3. Electrically Tunable Plasmonic Resonances with Graphene

    DEFF Research Database (Denmark)

    Emani, Naresh K.; Chung, Ting-Fung; Ni, Xingjie

    2012-01-01

    Real time switching of a plasmonic resonance may find numerous applications in subwavelength optoelectronics, spectroscopy and sensing. We take advantage of electrically tunable interband transitions in graphene to control the strength of the plasmonic resonance.......Real time switching of a plasmonic resonance may find numerous applications in subwavelength optoelectronics, spectroscopy and sensing. We take advantage of electrically tunable interband transitions in graphene to control the strength of the plasmonic resonance....

  4. A simple self-breaking 2 MV gas switch

    Energy Technology Data Exchange (ETDEWEB)

    Di Capua, M.S.; Freytag, E.K.; Dixon, W.R.; Hawley, R.A.

    1987-06-29

    We describe a simple self-breaking 2 MV gas master switch for the LLNL 2 MV general purpose relativistic electron beam (REB) accelerator. The switch cavity has been hollowed out in a 17.8 cm-thick acrylic slab. The switch gap is 3.55 cm. At 2 MV the maximum field at the cathode is 740 kV cm/sup -1/ and the maximum envelope field is 172 kV cm/sup -1/. The maximum measured switching voltage is 1.90 +- 0.1 MV (10 bar abs). The minimum switching voltage is 1.1 MV (4.3 bar abs). The operating characteristics break away from the 89 kV/(cm atm) dc breakdown strength of SF/sub 6/ at 5 bar abs. Careful electrical and mechanical design as well as strict quality control during assembly and operation have resulted in reliable and reproducible operation.

  5. The Effects of Coal Switching and Improvements in Electricity Production Efficiency and Consumption on CO2 Mitigation Goals in China

    Directory of Open Access Journals (Sweden)

    Li Li

    2015-07-01

    Full Text Available Although the average CO2 emission for a person in China is only about 1/4 that of a person in the US, the government of China still made a commitment to ensure that CO2 emissions will reach their peak in 2030 because of the ever-increasing pressure of global warming. In this work, we examined the effects of coal switching, efficiency improvements in thermal power generation and the electricity consumption of economic activities on realizing this goal. An improved STIRPAT model was developed to create the scenarios. In order to make the estimated elasticities more consistent with different variables selected to construct the formulation, a double-layer STIRPAT model was constructed, and by integrating the two equations obtained by regressing the series in each layer, we finally got the equation to describe the long-run relationship among CO2 emissions (Ic, the share of coal in overall energy consumption (FMC, coal intensity of thermal power generation (CIp and electricity intensity of GDP (EIelec. The long term elasticities represented by the equation show that the growth of CO2 emissions in China is quite sensitive to FMC, CIp and EIelec. After that, five scenarios were developed in order to examine the effects of China’s possible different CO2 emission reduction policies, focusing on improving FMC, CIp and EIelec respectively. Through a rigorous analysis, we found that in order to realize the committed CO2 emissions mitigating goal, China should obviously accelerate the pace in switching from coal to low carbon fuels, coupled with a consistent improvement in electricity efficiency of economic activities and a slightly slower improvement in the coal efficiency of thermal power generation.

  6. Stackelberg Game Model of Wind Farm and Electric Vehicle Battery Switch Station

    Science.gov (United States)

    Jiang, Zhe; Li, Zhimin; Li, Wenbo; Wang, Mingqiang; Wang, Mengxia

    2017-05-01

    In this paper, a cooperation method between wind farm and Electric vehicle battery switch station (EVBSS) was proposed. In the pursuit of maximizing their own benefits, the cooperation between wind farm and EVBSS was formulated as a Stackelberg game model by treating them as decision makers in different status. As the leader, wind farm will determine the charging/discharging price to induce the charging and discharging behavior of EVBSS reasonably. Through peak load shifting, wind farm could increase its profits by selling more wind power to the power grid during time interval with a higher purchase price. As the follower, EVBSS will charge or discharge according to the price determined by wind farm. Through optimizing the charging /discharging strategy, EVBSS will try to charge with a lower price and discharge with a higher price in order to increase its profits. Since the possible charging /discharging strategy of EVBSS is known, the wind farm will take the strategy into consideration while deciding the charging /discharging price, and will adjust the price accordingly to increase its profits. The case study proved that the proposed cooperation method and model were feasible and effective.

  7. Reversible Resistance Switching Effect in Amorphous Ge1Sb4Te7 Thin Films without Phase Transformation

    International Nuclear Information System (INIS)

    Hua-Jun, Sun; Li-Song, Hou; Yi-Qun, Wu; Xiao-Dong, Tang

    2009-01-01

    We demonstrate a reversible resistance switching effect that does not rely on amorphous-crystalline phase transformation in a nanoscale capacitor-like cell using Ge 1 Sb 4 Te 7 films as the working material. The polarity and amplitude of the applied electric voltage switches the cell resistance between low- and high-resistance states, as revealed in the current-voltage characteristics of the film by conductive atomic force microscopy (CAFM). This reversible SET/RESET switching effect is induced by voltage pulses and their polarity. The change of electrical resistance due to the switching effect is approximately two orders of magnitude

  8. Electric engineering introduction

    International Nuclear Information System (INIS)

    An, Byeong Won; Eom, Sang Ho

    1999-03-01

    It is divided into nine chapters, which includes electricity theory such as structure of material and current, nature of electricity, static, magnetic force and magnetic attraction, attraction of current and a storage battery, electric circuit on a direct current circuit, single phase circuit and 3-phase current circuit electricity machine like DC generator, DC motor, alternator, electric transformer, single-phase induction motor, 3-phase induction motor, synchronous motor, synchro electric machine, semiconductor such as diode, transistor, FET, UJT, silicon symmetrical switch, electronic circuit like smoothing circuit and Bistable MV. circuit, automatic control, measurement of electricity, electric application and safety.

  9. Switching and ruling; Schalten und walten

    Energy Technology Data Exchange (ETDEWEB)

    Schwarzburger, Heiko

    2013-04-15

    The year 2012 was a record year for the photovoltaics in Germany. Since mid-2012, the reduction of the feed-in tariff for solar power put the solar market under pressure. While in the past as much solar power should be fed in the power distribution system, own consumption, self-management and storage are paramount in the future. Self-generated solar power is highly profitable. The inverter is the control center for the own consumption. This inverter is considered as the heart of the solar generator and the interface to the electricity grid. SMA Solar Technology AG (Niestetal, Federal Republic of Germany) offers the Sunny Home Manager as an inverter for the power consumption in buildings. This inverter conducts the solar electricity to the consumers in the building such as the washing machine, dishwasher, refrigerator or heat pump. Due to an opportune switching on or switching off of these consumers, domestic consumption rate of solar power can be increased up to 40 %.

  10. Application of nanomaterials in two-terminal resistive-switching memory devices

    Directory of Open Access Journals (Sweden)

    Jianyong Ouyang

    2010-05-01

    Full Text Available Nanometer materials have been attracting strong attention due to their interesting structure and properties. Many important practical applications have been demonstrated for nanometer materials based on their unique properties. This article provides a review on the fabrication, electrical characterization, and memory application of two-terminal resistive-switching devices using nanomaterials as the active components, including metal and semiconductor nanoparticles (NPs, nanotubes, nanowires, and graphenes. There are mainly two types of device architectures for the two-terminal devices with NPs. One has a triple-layer structure with a metal film sandwiched between two organic semiconductor layers, and the other has a single polymer film blended with NPs. These devices can be electrically switched between two states with significant different resistances, i.e. the ‘ON’ and ‘OFF’ states. These render the devices important application as two-terminal non-volatile memory devices. The electrical behavior of these devices can be affected by the materials in the active layer and the electrodes. Though the mechanism for the electrical switches has been in argument, it is generally believed that the resistive switches are related to charge storage on the NPs. Resistive switches were also observed on crossbars formed by nanotubes, nanowires, and graphene ribbons. The resistive switches are due to nanoelectromechanical behavior of the materials. The Coulombic interaction of transient charges on the nanomaterials affects the configurable gap of the crossbars, which results into significant change in current through the crossbars. These nanoelectromechanical devices can be used as fast-response and high-density memory devices as well. Dr. Jianyong Ouyang received his bachelor degree from the Tsinghua University in Beijing, China, and MSc from the Institute of Chemistry, Chinese Academy of Science. He received his PhD from the Institute for Molecular

  11. Temperature-dependent resistance switching in SrTiO{sub 3}

    Energy Technology Data Exchange (ETDEWEB)

    Li, Jian-kun [Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China); University of Chinese Academy of Sciences, Beijing 100049 (China); Ma, Chao; Ge, Chen, E-mail: kjjin@iphy.ac.cn, E-mail: gechen@iphy.ac.cn; Gu, Lin; He, Xu; Zhou, Wen-jia; Lu, Hui-bin [Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China); Jin, Kui-juan, E-mail: kjjin@iphy.ac.cn, E-mail: gechen@iphy.ac.cn [Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China); University of Chinese Academy of Sciences, Beijing 100049 (China); Collaborative Innovation Center of Quantum Matter, Beijing 100190 (China); Zhang, Qing-hua [School of Materials Science and Engineering, State Key Lab of New Ceramics and Fine Processing, Tsinghua University, Beijing 100084 (China); Yang, Guo-zhen [Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China); Collaborative Innovation Center of Quantum Matter, Beijing 100190 (China)

    2016-06-13

    Resistance switching phenomena were studied by varying temperature in SrTiO{sub 3} single crystal. The resistance hysteresis loops appear at a certain temperature ranging from 340 K to 520 K. With the assistance of 375 nm ultraviolet continuous laser, the sample resistance is greatly reduced, leading to a stable effect than that in dark. These resistance switching phenomena only exist in samples with enough oxygen vacancies, which is confirmed by spherical aberration-corrected scanning transmission electron microscopy measurements, demonstrating an important role played by oxygen vacancies. At temperatures above 340 K, positively charged oxygen vacancies become mobile triggered by external electric field, and the resistance switching effect emerges. Our theoretical results based on drift-diffusion model reveal that the built-in field caused by oxygen vacancies can be altered under external electric field. Therefore, two resistance states are produced under the cooperative effect of built-in field and external field. However, the increasing mobility of oxygen vacancies caused by higher temperature promotes internal electric field to reach equilibrium states quickly, and suppresses the hysteresis loops above 420 K.

  12. Multiple application coded switch development report

    International Nuclear Information System (INIS)

    Bernal, E.L.; Kestly, J.D.

    1979-03-01

    The development of the Multiple Application Coded Switch (MACS) and its related controller are documented; the functional and electrical characteristics are described; the interface requirements defined, and a troubleshooting guide provided. The system was designed for the Safe Secure Trailer System used for secure transportation of nuclear material

  13. Neutron and gamma irradiation effects on power semiconductor switches

    International Nuclear Information System (INIS)

    Schwarze, G.E.; Frasca, A.J.

    1990-01-01

    The performance characteristics of high power semiconductor switches subjected to high levels of neutron fluence and gamma dose must be known by the designer of the power conditioning, control and transmission subsystem of space nuclear power systems. Location and the allowable shielding mass budget will determine the level of radiation tolerance required by the switches to meet performance and reliability requirements. Neutron and gamma ray interactions with semiconductor materials and how these interactions affect the electrical and switching characteristics of solid state power switches is discussed. The experimental measurement system and radiation facilities are described. Experimental data showing the effects of neutron and gamma irradiation on the performance characteristics are given for power-type NPN bipolar junction transistors (BJTs), and metal-oxide-semiconductor field effect transistors (MOSFETs)

  14. Ab initio investigation of the switching behavior of the dithiole-benzene nano-molecular wire

    International Nuclear Information System (INIS)

    Darvish Ganji, M.; Rungger, I.

    2008-01-01

    We report a first-principle study of electrical transport and switching behavior in a single molecular conductor consisting of a dithiole-benzene sandwiched between two Au( 100) electrodes. Ab initio total energy calculations reveal dithiole-benzene molecules on a gold surface, contacted by a monoatomic gold scanning tunneling microscope tip to have two classes of low energy conformations with differing symmetries. Lateral motion of the tip or excitation of the molecule cause it 10 change from one conformation class to the other and to switch between a strongly and a weakly conducting state. Thus, surprisingly. despite their apparent simplicity, these Au-dithiole-benzene -Au nano wires are shown to be electrically bi-stable switches, the smallest two-terminal molecular switches to date. The projected density of states and transmission coefficients are analyzed, and it suggests that the variation of the coupling between the molecule and the electrodes with external bias leads to switching behavior

  15. Torque Coordination Control during Braking Mode Switch for a Plug-in Hybrid Electric Vehicle

    Directory of Open Access Journals (Sweden)

    Yang Yang

    2017-10-01

    Full Text Available Hybrid vehicles usually have several braking systems, and braking mode switches are significant events during braking. It is difficult to coordinate torque fluctuations caused by mode switches because the dynamic characteristics of braking systems are different. In this study, a new type of plug-in hybrid vehicle is taken as the research object, and braking mode switches are divided into two types. The control strategy of type one is achieved by controlling the change rates of clutch hold-down and motor braking forces. The control strategy of type two is achieved by simultaneously changing the target braking torque during different mode switch stages and controlling the motor to participate in active coordination control. Finally, the torque coordination control strategy is modeled in MATLAB/Simulink, and the results show that the proposed control strategy has a good effect in reducing the braking torque fluctuation and vehicle shocks during braking mode switches.

  16. Fuel switching in power-plants: Modelling and impact on the analysis of energy projects

    International Nuclear Information System (INIS)

    Varympopiotis, G.; Tolis, A.; Rentizelas, A.

    2014-01-01

    Highlights: • The impact of fuel-switching in electricity generation is researched. • 15 Scenarios of fuel-technology combinations are compared using a computational model. • Fuel-switching results to higher yields compared to single-fuelled plants. • Plants with natural gas combined cycle and solid fuel supercritical boilers are optimal. • Fuel-switching, offers higher flexibility and security of fuel supply. - Abstract: In electricity markets, where conditions are uncertain, the choice of the best technology and the optimisation of production processes may not anymore be enough to ensure optimal investment yield of energy business plans. Providing some aspects of flexibility might enhance their financial performance; fuel switching may prove to be an alternative option, offering operational flexibility over time, as well as significant financial benefits. Traditional investment analysis methods are considered marginally useful to analyse this case. Instead, the recent tools of time-dependent investment analysis are more appropriate, since they are not inherently restricted to immediate, irreversible decisions. In the present work, a time-dependent computational model is presented and applied in the case study of the Greek Power Sector, in order to estimate the potential advantages of the fuel switching concept. Moreover, the optimal timing of switching is derived, to ensure increasing yields of an average-capacity power-plant. The results of the research indicate significant financial benefits anticipated in most scenarios from applying fuel switching, compared to single-fuelled electricity generation units. Security of fuel supply and enhanced flexibility may also be offered to the power plant since more than one technology and fuels may be engaged

  17. Resistive switching memories in MoS{sub 2} nanosphere assemblies

    Energy Technology Data Exchange (ETDEWEB)

    Xu, Xiao-Yong, E-mail: xxxy@yzu.edu.cn, E-mail: xcxseu@seu.edu.cn, E-mail: jghu@yzu.edu.cn [School of Physics Science and Technology, Yangzhou University, Yangzhou 225002 (China); State Key Laboratory of Bioelectronics and School of Electronic Science and Engineering, Southeast University, Nanjing 210096 (China); School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, Singapore 639798 (Singapore); Yin, Zong-You [School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, Singapore 639798 (Singapore); Xu, Chun-Xiang, E-mail: xxxy@yzu.edu.cn, E-mail: xcxseu@seu.edu.cn, E-mail: jghu@yzu.edu.cn; Dai, Jun [State Key Laboratory of Bioelectronics and School of Electronic Science and Engineering, Southeast University, Nanjing 210096 (China); Hu, Jing-Guo, E-mail: xxxy@yzu.edu.cn, E-mail: xcxseu@seu.edu.cn, E-mail: jghu@yzu.edu.cn [School of Physics Science and Technology, Yangzhou University, Yangzhou 225002 (China)

    2014-01-20

    A resistive switching memory device consisting of reduced graphene oxide and indium tin oxide as top/bottom two electrodes, separated by dielectric MoS{sub 2} nanosphere assemblies as the active interlayer, was fabricated. This device exhibits the rewritable nonvolatile resistive switching with low SET/RESET voltage (∼2 V), high ON/OFF resistance ratio (∼10{sup 4}), and superior electrical bistability, introducing a potential application in data storage field. The resistance switching mechanism was analyzed in the assumptive model of the electron tunneling across the polarized potential barriers.

  18. 75 FR 14097 - Revision to Electric Reliability Organization Definition of Bulk Electric System

    Science.gov (United States)

    2010-03-24

    ... electrical failure of a 138 kV motor operated switch on a 138 kV-13 kV transformer located in the ReliabilityFirst region resulted in the tripping of two transformers, one due to the electrical failure and the... Commission 18 CFR Part 40 [Docket No. RM09-18-000; 130 FERC ] 61,204] Revision to Electric Reliability...

  19. Minimization of switching frequency oscillation of voltage inverter

    Czech Academy of Sciences Publication Activity Database

    Večerka, Tomáš

    2011-01-01

    Roč. 56, č. 2 (2011), s. 125-140 ISSN 0001-7043 Institutional research plan: CEZ:AV0Z20570509 Keywords : switching frequency * pulse-width modulation * induction motors Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering

  20. Effect of oxyfluorinated multi-walled carbon nanotube additives on positive temperature coefficient/negative temperature coefficient behavior in high-density polyethylene polymeric switches

    International Nuclear Information System (INIS)

    Bai, Byong Chol; Kang, Seok Chang; Im, Ji Sun; Lee, Se Hyun; Lee, Young-Seak

    2011-01-01

    Graphical abstract: The electrical properties of MWCNT-filled HDPE polymeric switches and their effect on oxyfluorination. Highlights: → Oxyfluorinated MWCNTs were used to reduce the PTC/NTC phenomenon in MWCNT-filled HDPE polymeric switches. → Electron mobility is difficult in MWCNT particles when the number of oxygen functional groups (C-O, C=O) increases by oxyfluorination. → A mechanism of improved electrical properties of oxyfluorinated MWCNT-filled HDPE polymeric switches was suggested. -- Abstract: Multi-walled carbon nanotubes (MWCNTs) were embedded into high-density polyethylene (HDPE) to improve the electrical properties of HDPE polymeric switches. The MWCNT surfaces were modified by oxyfluorination to improve their positive temperature coefficient (PTC) and negative temperature coefficient (NTC) behaviors in HDPE polymeric switches. HDPE polymeric switches exhibit poor electron mobility between MWCNT particles when the number of oxygen functional groups is increased by oxyfluorination. Thus, the PTC intensity of HDPE polymeric switches was increased by the destruction of the electrical conductivity network. The oxyfluorination of MWCNTs also leads to weak NTC behavior in the MWCNT-filled HDPE polymeric switches. This result is attributed to the reduction of the mutual attraction between the MWCNT particles at the melting temperature of HDPE, which results from a decrease in the surface free energy of the C-F bond in MWCNT particles.

  1. Attaching Copper Wires to Magnetic-Reed-Switch Leads

    Science.gov (United States)

    Kamila, Rudolf

    1987-01-01

    Bonding method reliably joins copper wires to short iron-alloy leads from glass-encased dry magnetic-reed switch without disturbing integrity of glass-to-metal seal. Joint resistant to high temperatures and has low electrical resistance.

  2. Electrical Safety for Non-Electricians

    Science.gov (United States)

    ... handled cement finishing floats • Metal ladders • Raised dump truck beds • Scaffolding But electrical hazards are also at ... must be grounded. Your employer must check all electric systems, including wiring and switches, to be sure ...

  3. Multiobjective optimal placement of switches and protective devices in electric power distribution systems using ant colony optimization

    Energy Technology Data Exchange (ETDEWEB)

    Tippachon, Wiwat; Rerkpreedapong, Dulpichet [Department of Electrical Engineering, Kasetsart University, 50 Phaholyothin Rd., Ladyao, Jatujak, Bangkok 10900 (Thailand)

    2009-07-15

    This paper presents a multiobjective optimization methodology to optimally place switches and protective devices in electric power distribution networks. Identifying the type and location of them is a combinatorial optimization problem described by a nonlinear and nondifferential function. The multiobjective ant colony optimization (MACO) has been applied to this problem to minimize the total cost while simultaneously minimize two distribution network reliability indices including system average interruption frequency index (SAIFI) and system interruption duration index (SAIDI). Actual distribution feeders are used in the tests, and test results have shown that the algorithm can determine the set of optimal nondominated solutions. It allows the utility to obtain the optimal type and location of devices to achieve the best system reliability with the lowest cost. (author)

  4. Subnanosecond photoconductive switching in GaAs

    Energy Technology Data Exchange (ETDEWEB)

    Druce, R.L.; Pocha, M.D.; Griffin, K.L.

    1991-04-01

    We are conducting research in photoconductive switching for the purpose of generating microwave pulses with amplitudes up to 50 kV. This technology has direct application to impulse radar and HPM sources. We are exploiting the very fast recombination rates of Gallium Arsenide (GaAs) to explore the potential of GaAs as an on-off switch when operating in the linear mode (the linear mode is defined such that one carrier pair is generated for each photon absorbed). In addition, we are exploring the potential GaAs to act as a closing switch in ``avalanche`` mode at high fields. We have observed switch closing times of less than 200 psec with a 100 psec duration laser pulse and opening times of less than 400 psec with neutron irradiated GaAs at fields of tens of kV/cm. If the field is increased and the laser energy decreased, the laser can be used to trigger photoconductive switches into ``avalanche`` mode of operation in which carrier multiplication occurs. This mode of operation is quite promising since the switches close in less than 1 nsec while realizing significant energy gain (ratio of electrical energy in the pulse to optical trigger energy). We are currently investigating both large area (1 sq cm) and small area (< 1 sq mm) switches illuminated by GaAlAs laser diodes at 900 nm and Nd:YAG lasers at 1.06 micrometers. Preliminary results indicate that the closing time of the avalanche switches depends primarily on the material properties of the devices with closing times of 300--1300 psec at voltages of 6--35 kV. We will present experimental results for linear, lock on and avalanche mode operation of GaAs photoconductive switches and how these pulses may be applied to microwave generation. 3 refs.

  5. Subnanosecond photoconductive switching in GaAs

    Energy Technology Data Exchange (ETDEWEB)

    Druce, R.L.; Pocha, M.D.; Griffin, K.L.

    1991-04-01

    We are conducting research in photoconductive switching for the purpose of generating microwave pulses with amplitudes up to 50 kV. This technology has direct application to impulse radar and HPM sources. We are exploiting the very fast recombination rates of Gallium Arsenide (GaAs) to explore the potential of GaAs as an on-off switch when operating in the linear mode (the linear mode is defined such that one carrier pair is generated for each photon absorbed). In addition, we are exploring the potential GaAs to act as a closing switch in avalanche'' mode at high fields. We have observed switch closing times of less than 200 psec with a 100 psec duration laser pulse and opening times of less than 400 psec with neutron irradiated GaAs at fields of tens of kV/cm. If the field is increased and the laser energy decreased, the laser can be used to trigger photoconductive switches into avalanche'' mode of operation in which carrier multiplication occurs. This mode of operation is quite promising since the switches close in less than 1 nsec while realizing significant energy gain (ratio of electrical energy in the pulse to optical trigger energy). We are currently investigating both large area (1 sq cm) and small area (< 1 sq mm) switches illuminated by GaAlAs laser diodes at 900 nm and Nd:YAG lasers at 1.06 micrometers. Preliminary results indicate that the closing time of the avalanche switches depends primarily on the material properties of the devices with closing times of 300--1300 psec at voltages of 6--35 kV. We will present experimental results for linear, lock on and avalanche mode operation of GaAs photoconductive switches and how these pulses may be applied to microwave generation. 3 refs.

  6. Subnanosecond photoconductive switching in GaAs

    Energy Technology Data Exchange (ETDEWEB)

    Druce, R.L.; Pocha, M.D.; Griffin, K.L.

    1990-01-01

    We are conducting research in photoconductive switching for the purpose of generating microwave pulses with amplitudes up to 50 kV. This technology has direct application to impulse radar and HPM sources. We are exploiting the very fast recombination rates of Gallium Arsenide (GaAs) to explore the potential of GaAs as an on-off switch when operating in the linear mode (the linear mode is defined such that one carrier pair is generated for each photon absorbed). In addition, we are exploring the potential of GaAs to act as a closing switch in avalanche'' mode at high fields. We have observed switch closing times of less than 200 psec with 100 psec duration laser pulse and opening times of less than 400 psec with neutron irradiated GaAs at fields of tens of kV/cm. If the field is increased and the laser energy decreased, the laser can be used to trigger photoconductive switches into an avalanche'' mode of operation in which carrier multiplication occurs. This mode of operation is quite promising since the switches close in less than 1 nsec while realizing significant energy gain (ratio of electrical energy in the pulse to optical trigger energy). We are currently investigating both large are (1 sq cm) and small area (<1 sq mm) switches illuminated by GaAlAs laser diodes at 900 nm and Nd:YAG lasers at 1.06 micrometers. Preliminary results indicate that the closing time of the avalanche switches depends primarily on the material properties of the devices with closing times of 300--1300 psec at voltages of 6-35 kV. We will present experimental results for linear, lock on and avalanche mode operation of GaAs photoconductive switches and how these pulses may be applied to microwave generation. 3 refs., 11 figs.

  7. Subnanosecond photoconductive switching in GaAs

    Science.gov (United States)

    Druce, R. L.; Pocha, M. D.; Griffin, K. L.

    1991-04-01

    We are conducting research in photoconductive switching for the purpose of generating microwave pulses with amplitudes up to 50 kV. This technology has direct application to impulse radar and HPM sources. We are exploiting the very fast recombination rates of Gallium Arsenide (GaAs) to explore the potential of GaAs as an on-off switch when operating in the linear mode (the linear mode is defined such that one carrier pair is generated for each photon absorbed). In addition, we are exploring the potential GaAs to act as a closing switch in 'avalanche' mode at high fields. We have observed switch closing times of less than 200 psec with a 100 psec duration laser pulse and opening times of less than 400 psec with neutron irradiated GaAs at fields of tens of kV/cm. If the field is increased and the laser energy decreased, the laser can be used to trigger photoconductive switches into 'avalanche' mode of operation in which carrier multiplication occurs. This mode of operation is quite promising since the switches close in less than 1 nsec while realizing significant energy gain (ratio of electrical energy in the pulse to optical trigger energy). We are currently investigating both large area (1 sq cm) and small area (less than 1 sq mm) switches illuminated by GaAlAs laser diodes at 900 nm and Nd:YAG lasers at 1.06 micrometers. Preliminary results indicate that the closing time of the avalanche switches depends primarily on the material properties of the devices with closing times of 300-1300 psec at voltages of 6-35 kV. We will present experimental results for linear, lock on, and avalanche mode operation of GaAs photoconductive switches and how these pulses may be applied to microwave generation.

  8. The influence of electrical resistivity, magnetic field strength, boundary conditions, and injection conditions on the behavior of the magnetically injected plasma in the PBFA-II opening switch

    International Nuclear Information System (INIS)

    Watrous, J.J.; Frese, M.H.

    1993-01-01

    The Plasma Opening Switch used on PBFA-II uses a source plasma which is injected into the inter-electrode gap along the field lines of a modest-strength applied poloidal magnetic field. The distribution of this plasma within the gap plays an important role in the behavior of the switch. Knowledge of this distribution is critical for performing relevant switch calculations and for interpreting experimental data. In the work reported here, the influence on that distribution of the plasma electrical resistivity, the applied magnetic field strength, and the boundary and injection conditions have been investigated with the 2 1/2-dimensional magnetohydrodynamics simulation code, MACH2. The injected plasma has density in the 10 14 cm -3 range and temperature in the several eV range. In this parameter regime, the classical collision time scale is on the order of 10 ns, which, when compared to the 100 ns time scale of the inflowing plasma, means that the plasma is classically collisionless. However, mechanisms other than classical collisions are likely to contribute to electrical resistivity. The authors have investigated the effect of an anomalous resistivity which scales with the plasma frequency, varying the scaling from the electron plasma frequency to the ion plasma frequency. They will compare these results with results based on the assumption of an ideal plasma, and discuss other anomalous resistivity models

  9. Torque Coordination Control during Braking Mode Switch for a Plug-in Hybrid Electric Vehicle

    OpenAIRE

    Yang Yang; Chao Wang; Quanrang Zhang; Xiaolong He

    2017-01-01

    Hybrid vehicles usually have several braking systems, and braking mode switches are significant events during braking. It is difficult to coordinate torque fluctuations caused by mode switches because the dynamic characteristics of braking systems are different. In this study, a new type of plug-in hybrid vehicle is taken as the research object, and braking mode switches are divided into two types. The control strategy of type one is achieved by controlling the change rates of clutch hold-dow...

  10. Electrically switched cesium ion exchange. FY 1997 annual report

    International Nuclear Information System (INIS)

    Lilga, M.A.; Orth, R.J.; Sukamto, J.P.H.

    1997-09-01

    This paper describes the Electrically Switched Ion Exchange (ESIX) separation technology being developed as an alternative to ion exchange for removing radionuclides from high-level waste. Progress in FY 1997 for specific applications of ESIX is also outlined. The ESIX technology, which combines ion exchange and electrochemistry, is geared toward producing electroactive films that are highly selective, regenerable, and long lasting. During the process, ion uptake and elution can be controlled directly by modulating the potential of an ion exchange film that has been electrochemically deposited onto a high surface area electrode. This method adds little sodium to the waste stream and minimizes the secondary wastes associated with traditional ion exchange techniques. Development of the ESIX process is well underway for cesium removal using ferrocyanides as the electroactive films. Films having selectivity for perrhenate (a pertechnetate surrogate) over nitrate also have been deposited and tested. Based on the ferrocyanide film capacity, stability, rate of uptake, and selectivity shown during performance testing, it appears possible to retain a consistent rate of removal and elute cesium into the same elution solution over several load/unload cycles. In batch experiments, metal hexacyanoferrate films showed high selectivities for cesium in concentrated sodium solutions. Cesium uptake was unaffected by Na/Cs molar ratios of up to 2 x 10 4 , and reached equilibrium within 18 hours. During engineering design tests using 60 pores per inch, high surface area nickel electrodes, nickel ferrocyanide films displayed continued durability. losing less than 20% of their capacity after 1500 load/unload cycles. Bench-scale flow system studies showed no change in capacity or performance of the ESIX films at a flow rate up to 13 BV/h, the maximum flow rate tested, and breakthrough curves further supported once-through waste processing. 9 refs., 24 figs

  11. Resistance switching in silver - manganite contacts

    International Nuclear Information System (INIS)

    Gomez-Marlasca, F; Levy, P

    2009-01-01

    We investigate the electric pulse induced resistance switching in a transition metal oxide-metal contact at room temperature - a non volatile, reversible and multilevel memory device. Using a simple multiterminal configuration, we find that the complementary effect -in which the contact resistance of each pulsed electrode displays variations of opposite sign- is strongly influenced by the history of the pulsing procedure. Loops performed by varying the magnitude and sign of the stimulus at each pulsed electrode allow to disentangle their sole contribution at different stages of the process. Electromigration of oxygen ions and vacancies is discussed as participating at the core of the underlying mechanisms for resistance switching.

  12. Resistance switching in silver - manganite contacts

    Energy Technology Data Exchange (ETDEWEB)

    Gomez-Marlasca, F [Materia Condensada GIA GAIANN CAC -CNEA, and Instituto de Nanociencia y Nanotecnologia, CNEA, Gral Paz 1499 (1650) San Martin, Pcia. Buenos Aires (Argentina); Levy, P, E-mail: levy@cnea.gov.a

    2009-05-01

    We investigate the electric pulse induced resistance switching in a transition metal oxide-metal contact at room temperature - a non volatile, reversible and multilevel memory device. Using a simple multiterminal configuration, we find that the complementary effect -in which the contact resistance of each pulsed electrode displays variations of opposite sign- is strongly influenced by the history of the pulsing procedure. Loops performed by varying the magnitude and sign of the stimulus at each pulsed electrode allow to disentangle their sole contribution at different stages of the process. Electromigration of oxygen ions and vacancies is discussed as participating at the core of the underlying mechanisms for resistance switching.

  13. Design and Simulation of an RF-MEMS Switch and analysis of its Electromagnetic aspect in realtion to stress

    Directory of Open Access Journals (Sweden)

    Amna Riaz

    2018-01-01

    Full Text Available Microelectromechanical Systems (MEMS are devices made up of several electrical and mechanical components. They consist of mechanical functions (sensing, thermal, inertial and electrical functions (switching, decision making on a single chip made by microfabrication methods. These chips exhibit combined properties of the two functions. The size of system has characteristic dimensions less than 1mm but more than 1μm. The configuration of these components determine the final deliverables of the switch. MEMS can be designed to meet user requirements on any level from microbiological application such as biomedical transducers or tissue engineering, to mechanical systems such as microfluidic diagnoses or chemical fuel cells. The low cost, small mass and minimal power consumption of the MEMS makes it possible to readily integrate to any kind of system in any environment. MEMS are faster, better and cheaper. They offer excellent electrical performances. MEMS working at Radio frequencies are RF MEMS. RF-MEMS switches find huge market in the modern telecommunication networks, biological, automobiles, satellites and defense systems because of their lower power consumptions at relatively higher frequencies and better electrical performances. But the reliability is the major hurdle in the fate of RF MEMS switches. Reliability mainly arises due to the presence of residual stresses, charging current, fatigue and creep and contact degradation. The presence of residual stresses in switches the S-Parameters of the switches are affected badly and the residual stress affects the final planarity of the fabricated structure. Design and simulation of an RF-MEMS switch is proposed considering the residual stresses in both on and off state. The operating frequency band is being optimized and the best possible feasible fabrication technique for the proposed switch design is being analyzed. S-Parameters are calculated and a comparison for the switches with stress and

  14. Method and system for a gas tube switch-based voltage source high voltage direct current transmission system

    Science.gov (United States)

    She, Xu; Chokhawala, Rahul Shantilal; Zhou, Rui; Zhang, Di; Sommerer, Timothy John; Bray, James William

    2016-12-13

    A voltage source converter based high-voltage direct-current (HVDC) transmission system includes a voltage source converter (VSC)-based power converter channel. The VSC-based power converter channel includes an AC-DC converter and a DC-AC inverter electrically coupled to the AC-DC converter. The AC-DC converter and a DC-AC inverter include at least one gas tube switching device coupled in electrical anti-parallel with a respective gas tube diode. The VSC-based power converter channel includes a commutating circuit communicatively coupled to one or more of the at least one gas tube switching devices. The commutating circuit is configured to "switch on" a respective one of the one or more gas tube switching devices during a first portion of an operational cycle and "switch off" the respective one of the one or more gas tube switching devices during a second portion of the operational cycle.

  15. Quasi-Resonant Full-Wave Zero-Current Switching Buck Converter Design, Simulation and Application

    OpenAIRE

    Yanik, G.; Isen, E.

    2015-01-01

    —This paper presents a full wave quasi-resonant zerocurrent switching buck converter design, simulation and application. The converter control uses with zero-current switching (ZCS) technique to decrease the switching losses. Comparing to conventional buck converter, resonant buck converter includes a resonant tank equipped with resonant inductor and capacitor. The converter is analyzed in mathematical for each subintervals. Depending on the desired input and output electrical quantities, con...

  16. Mountain Plains Learning Experience Guide: Electrical Wiring. Course: Electrical Wiring Trim-Out.

    Science.gov (United States)

    Arneson, R.; And Others

    One of two individualized courses included in an electrical wiring curriculum, this course covers electrical materials installation for the trim-out stage. The course is comprised of five units: (1) Outlets, (2) Fixtures, (3) Switches, (4) Appliances, and (5) Miscellaneous. Each unit begins with a Unit Learning Experience Guide that gives…

  17. Polarity-dependent reversible resistance switching in Ge-Sb-Te phase-change thin films

    NARCIS (Netherlands)

    Pandian, Ramanathaswamy; Kooi, Bart J.; Palasantzas, George; De Hosson, Jeff T. M.; Pauza, Andrew

    2007-01-01

    In this paper, we demonstrate reversible resistance switching in a capacitorlike cell using a Ge-Sb-Te film that does not rely on amorphous-crystalline phase change. The polarity of the applied electric field switches the cell resistance between lower- and higher-resistance states, as was observed

  18. Large aperture optical switching devices

    International Nuclear Information System (INIS)

    Goldhar, J.; Henesian, M.A.

    1983-01-01

    We have developed a new approach to constructing large aperture optical switches for next generation inertial confinement fusion lasers. A transparent plasma electrode formed in low pressure ionized gas acts as a conductive coating to allow the uniform charging of the optical faces of an electro-optic material. In this manner large electric fields can be applied longitudinally to large aperture, high aspect ratio Pockels cells. We propose a four-electrode geometry to create the necessary high conductivity plasma sheets, and have demonstrated fast (less than 10 nsec) switching in a 5x5 cm aperture KD*P Pockels cell with such a design. Detaid modelling of Pockels cell performance with plasma electrodes has been carried out for 15 and 30 cm aperture designs

  19. Carbon nanotube network-silicon oxide non-volatile switches.

    Science.gov (United States)

    Liao, Albert D; Araujo, Paulo T; Xu, Runjie; Dresselhaus, Mildred S

    2014-12-08

    The integration of carbon nanotubes with silicon is important for their incorporation into next-generation nano-electronics. Here we demonstrate a non-volatile switch that utilizes carbon nanotube networks to electrically contact a conductive nanocrystal silicon filament in silicon dioxide. We form this device by biasing a nanotube network until it physically breaks in vacuum, creating the conductive silicon filament connected across a small nano-gap. From Raman spectroscopy, we observe coalescence of nanotubes during breakdown, which stabilizes the system to form very small gaps in the network~15 nm. We report that carbon nanotubes themselves are involved in switching the device to a high resistive state. Calculations reveal that this switching event occurs at ~600 °C, the temperature associated with the oxidation of nanotubes. Therefore, we propose that, in switching to a resistive state, the nanotube oxidizes by extracting oxygen from the substrate.

  20. Atomic battery with beam switching

    International Nuclear Information System (INIS)

    Edling, E.A.; McKenna, R.P.; Peterick, E.Th. Jr.; Trexler, F.D.

    1984-01-01

    An electric power generating apparatus that is powered primarily by the emission of electrically charged particles from radio-active materials enclosed in an evacuated vessel of glass or the like. An arrangement of reflecting electrodes causes a beam of particles to switch back and forth at a high frequency between two collecting electrodes that are connected to a resonating tuned primary circuit consisting of an inductor with resonating capacitor. The reflecting electrodes are energized in the proper phase relationship to the collecting electrodes to insure sustained oscillation by means of a secondary winding coupled inductively to the primary winding and connected to the reflecting electrodes. Power may be drawn from the circuit at a stepped down voltage from a power take-off winding that is coupled to the primary winding. The disclosure also describes a collecting electrode arrangement consisting of multiple spatially separated electrodes which together serve to capture a maximum of the available particle energy. A self-starting arrangement for start of oscillations is described. A specially adapted version of the invention utilizes two complementary beams of oppositely charged particles which are switched alternatingly between the collecting electrodes

  1. Compact electrically controlled broadband liquid crystal photonic bandgap fiber polarizer

    DEFF Research Database (Denmark)

    Wei, Lei; Alkeskjold, Thomas Tanggaard; Bjarklev, Anders Overgaard

    2009-01-01

    An electrically controlled liquid crystal photonic-bandgap fiber polarizer is experimentally demonstrated. A maximum 21.3dB electrically tunable polarization extinction ratio is achieved with 45° rotatable transmission axis as well as switched on and off in 1300nm–1600nm.......An electrically controlled liquid crystal photonic-bandgap fiber polarizer is experimentally demonstrated. A maximum 21.3dB electrically tunable polarization extinction ratio is achieved with 45° rotatable transmission axis as well as switched on and off in 1300nm–1600nm....

  2. Switching conditions in the electric power system

    International Nuclear Information System (INIS)

    Tsukushi, M.; Hirasawa, K.; Kurosawa, Y.

    1991-01-01

    This paper reports that a circuit breaker must be capable of making, carrying, and interrupting the current under both normal and abnormal conditions, especially in the case of a short-circuit fault. Before installing a circuit breaker, it is necessary to estimate the maximum short-circuit current that can occur in the electric power system and then select a circuit breaker that can interrupt and make the estimated current. Many types of short-circuit faults occur in electric power systems

  3. Galvanotactic behavior of Tetrahymena pyriformis under electric fields

    International Nuclear Information System (INIS)

    Kim, Dal Hyung; Kim, Paul Seung Soo; Kim, Min Jun; Lee, Kyoungwoo; Kim, JinSeok

    2013-01-01

    Tetrahymena pyriformis, a eukaryotic ciliate, swims toward a cathode in straight or cross-shaped microchannels under an applied electric field, a behavioral response called cathodal galvanotaxis. In straight channel experiments, a one-dimensional electric field was applied, and the galvanotactic swimming behavior of Tetrahymena pyriformis was observed and described in detail while the polarity of this field is switched. In most individual cases, the cell would immediately switch its direction toward the cathode; however, exceptional cases have been observed where cells exhibit a turning delay or do not turn after a polarity switch. In cross-channel experiments, feedback control using vision-based tracking was used to steer a cell in the microchannel intersection using a two-dimensional electric field generated by four electrodes placed at four ends of the cross channel. The motivation for this work is to study the swimming behavior of Tetrahymena pyriformis as a microrobot under the control of electric fields. (paper)

  4. Mountain Plains Learning Experience Guide: Electrical Wiring. Course: Electrical Wiring Rough-In.

    Science.gov (United States)

    Arneson, R.; And Others

    One of two individualized courses included in an electrical wiring curriculum, this course covers electrical installations that are generally hidden within the structure. The course is comprised of four units: (1) Outlet and Switch Boxes, (2) Wiring, (3) Service Entrance, and (4) Signal and Low Voltage Systems. Each unit begins with a Unit…

  5. MATHEMATIC SIMULATION OF TRANSIENT PROCESS IN A.C. – SYSTEM “ELECTRIC TRACTION NETWORK – LOCOMOTIVE” 1. SWITCH ON LOCOMOTIVE’S POWER CONVERTER IN “FREE PLAY” MODE; PARAMETERS ESTIMATION

    OpenAIRE

    T. M. Mishchenko; A. I. Kiiko

    2010-01-01

    In the article the electric circuit of substitution and mathematical model of the system of alternating current «traction substation − traction mains − electric locomotive DS 3» at switching its power transformer on in the idle mode are presented. Numerical determinations of parameters of traction substation, rails, contact network and transformer are executed; in so doing a special attention is paid to the estimation of dispersion inductance for the primary winding of transformer.

  6. Manufacturing fuel-switching capability, 1988

    International Nuclear Information System (INIS)

    1991-09-01

    Historically, about one-third of all energy consumed in the United States has been used by manufacturers. About one-quarter of manufacturing energy is used as feedstocks and raw material inputs that are converted into nonenergy products; the remainder is used for its energy content. During 1988, the most recent year for which data are available, manufacturers consumed 15.5 quadrillion British thermal units (Btu) of energy to produce heat and power and to generate electricity. The manufacturing sector also has widespread capabilities to switch from one fuel to another for either economic or emergency reasons. There are numerous ways to define fuel switching. For the purposes of the Manufacturing Energy Consumption Survey (MECS), fuel switching is defined as the capability to substitute one energy source for another within 30 days with no significant modifications to the fuel-consuming equipment, while keeping production constant. Fuel-switching capability allows manufacturers substantial flexibility in choosing their mix of energy sources. The consumption of a given energy source can be maximized if all possible switching into that energy source takes place. The estimates in this report are based on data collected on the 1988 Manufacturing Energy Consumption Survey (MECS), Forms 846 (A through C). The EIA conducts this national sample survey of manufacturing energy consumption on a triennial basis. The MECS is the only comprehensive source of national-level data on energy-related information for the manufacturing industries. The MECS was first conducted in 1986 to collect data for 1985. This report presents information on the fuel-switching capabilities of manufacturers in 1988. This report is the second of a series based on the 1988 MECS. 8 figs., 31 tabs

  7. Manufacturing fuel-switching capability, 1988

    Energy Technology Data Exchange (ETDEWEB)

    1991-09-01

    Historically, about one-third of all energy consumed in the United States has been used by manufacturers. About one-quarter of manufacturing energy is used as feedstocks and raw material inputs that are converted into nonenergy products; the remainder is used for its energy content. During 1988, the most recent year for which data are available, manufacturers consumed 15.5 quadrillion British thermal units (Btu) of energy to produce heat and power and to generate electricity. The manufacturing sector also has widespread capabilities to switch from one fuel to another for either economic or emergency reasons. There are numerous ways to define fuel switching. For the purposes of the Manufacturing Energy Consumption Survey (MECS), fuel switching is defined as the capability to substitute one energy source for another within 30 days with no significant modifications to the fuel-consuming equipment, while keeping production constant. Fuel-switching capability allows manufacturers substantial flexibility in choosing their mix of energy sources. The consumption of a given energy source can be maximized if all possible switching into that energy source takes place. The estimates in this report are based on data collected on the 1988 Manufacturing Energy Consumption Survey (MECS), Forms 846 (A through C). The EIA conducts this national sample survey of manufacturing energy consumption on a triennial basis. The MECS is the only comprehensive source of national-level data on energy-related information for the manufacturing industries. The MECS was first conducted in 1986 to collect data for 1985. This report presents information on the fuel-switching capabilities of manufacturers in 1988. This report is the second of a series based on the 1988 MECS. 8 figs., 31 tabs.

  8. Enhanced capacity and stability for the separation of cesium in electrically switched ion exchange

    International Nuclear Information System (INIS)

    Tawfic, A.F.; Dickson, S.E.; Kim, Y.; Mekky, W.

    2015-01-01

    Electrically switched ion exchange (ESIX) can be used to separate ionic contaminants from industrial wastewater, including that generated by the nuclear industry. The ESIX method involves sequential application of reduction and oxidation potentials to an ion exchange film to induce the respective loading and unloading of cesium. This technology is superior to conventional methods (e.g electrodialysis reversal or reverse osmosis) as it requires very little energy for ionic separation. In previous studies, ESIX films have demonstrated relatively low ion exchange capacities and limited film stabilities over repeated potential applications. In this study, the methodology for the deposition of electro-active films (nickel hexacyanoferrate) on nickel electrodes was modified to improve the ion exchange capacity for cesium removal using ESIX. Cyclic voltammetry was used to investigate the ion exchange capacity and stability. Scanning electron microscopy (SEM) was used to characterize the modified film surfaces. Additionally, the films were examined for the separation of cesium ions. This modified film preparation technique enhanced the ion exchange capacity and improves the film stability compared to previous methods for the deposition of ESIX films. (authors)

  9. Enhanced capacity and stability for the separation of cesium in electrically switched ion exchange

    Energy Technology Data Exchange (ETDEWEB)

    Tawfic, A.F.; Dickson, S.E.; Kim, Y. [McMaster University, Hamilton, ON (Canada); Mekky, W. [AMEC NSS, Power and Process America, Toronto (Canada)

    2015-03-15

    Electrically switched ion exchange (ESIX) can be used to separate ionic contaminants from industrial wastewater, including that generated by the nuclear industry. The ESIX method involves sequential application of reduction and oxidation potentials to an ion exchange film to induce the respective loading and unloading of cesium. This technology is superior to conventional methods (e.g electrodialysis reversal or reverse osmosis) as it requires very little energy for ionic separation. In previous studies, ESIX films have demonstrated relatively low ion exchange capacities and limited film stabilities over repeated potential applications. In this study, the methodology for the deposition of electro-active films (nickel hexacyanoferrate) on nickel electrodes was modified to improve the ion exchange capacity for cesium removal using ESIX. Cyclic voltammetry was used to investigate the ion exchange capacity and stability. Scanning electron microscopy (SEM) was used to characterize the modified film surfaces. Additionally, the films were examined for the separation of cesium ions. This modified film preparation technique enhanced the ion exchange capacity and improves the film stability compared to previous methods for the deposition of ESIX films. (authors)

  10. Retail competition in electricity supply—Survey results in North Carolina

    International Nuclear Information System (INIS)

    McDaniel, Tanga M.; Groothuis, Peter A.

    2012-01-01

    Residential retail competition in electricity supply was introduced in many countries and some US states as part of electricity industry deregulation. Following problems in the electricity market in California in 2000/2001 many US states, including North Carolina, suspended their deregulation agenda. Recent technological advances have made competition more viable, so we ask if NC should reconsider deregulation and retail competition. The welfare benefits will depend on consumers’ willingness to switch suppliers and the potential for value added innovations. In electricity and industries such as pay-tv and telecommunications consumers are ‘sticky’, remaining with their current supplier even though rivals offer savings. Moreover, some analysts question the likelihood of significant welfare improvements from retail competition. We survey residents in two NC counties focusing on: (i) households’ knowledge of and interest in retail competition, (ii) factors that would encourage them to switch suppliers and (iii) the required savings to encourage switching. About 50–65% of respondents would favor retail competition in NC. Demographic variables and experience switching in other industries affect opinions and the savings required to incent switching. We conclude the estimated rate reduction to encourage competitive switching will be hard to achieve in NC as long as rates remain below the national average. - Highlights: ► NC survey results suggest residents are interested in utility supply competition. ► Socio-demographic variables affect opinions. ► A lower bound on required savings to incent switching is about 1.4¢/kWh. ► NC residential rates are below the national average, so such a savings is unlikely.

  11. Selective control of multiple ferroelectric switching pathways using a trailing flexoelectric field

    Science.gov (United States)

    Park, Sung Min; Wang, Bo; Das, Saikat; Chae, Seung Chul; Chung, Jin-Seok; Yoon, Jong-Gul; Chen, Long-Qing; Yang, Sang Mo; Noh, Tae Won

    2018-05-01

    Flexoelectricity is an electromechanical coupling between electrical polarization and a strain gradient1 that enables mechanical manipulation of polarization without applying an electrical bias2,3. Recently, flexoelectricity was directly demonstrated by mechanically switching the out-of-plane polarization of a uniaxial system with a scanning probe microscope tip3,4. However, the successful application of flexoelectricity in low-symmetry multiaxial ferroelectrics and therefore active manipulation of multiple domains via flexoelectricity have not yet been achieved. Here, we demonstrate that the symmetry-breaking flexoelectricity offers a powerful route for the selective control of multiple domain switching pathways in multiaxial ferroelectric materials. Specifically, we use a trailing flexoelectric field that is created by the motion of a mechanically loaded scanning probe microscope tip. By controlling the SPM scan direction, we can deterministically select either stable 71° ferroelastic switching or 180° ferroelectric switching in a multiferroic magnetoelectric BiFeO3 thin film. Phase-field simulations reveal that the amplified in-plane trailing flexoelectric field is essential for this domain engineering. Moreover, we show that mechanically switched domains have a good retention property. This work opens a new avenue for the deterministic selection of nanoscale ferroelectric domains in low-symmetry materials for non-volatile magnetoelectric devices and multilevel data storage.

  12. Switching speed limitations of high power IGBT modules

    DEFF Research Database (Denmark)

    Incau, Bogdan Ioan; Trintis, Ionut; Munk-Nielsen, Stig

    2015-01-01

    for the blocking dc-link voltage. Switching losses are analyzed upon a considerable variation of resistor value from turn-on gate driver side. Short circuit operations are investigated along with safe operating area for entire module to validate electrical capabilities under extreme conditions....

  13. Design of a tunable graphene plasmonic-on-white graphene switch at infrared range

    Science.gov (United States)

    Farmani, Ali; Zarifkar, Abbas; Sheikhi, Mohammad H.; Miri, Mehdi

    2017-12-01

    A tunable Y-branch graphene plasmonic switch operating at the wavelength of 1.55 μm is proposed in which graphene is placed on white graphene. The switch structure is investigated analytically and numerically by the finite difference time domain method. The graphene plasmonic switch considered here supports both transverse magnetic and transverse electric graphene plasmons whose propagation characteristics can be controlled by modulating the external electric field and the temperature of graphene. Our calculations show that by strong coupling between the incident waves and the graphene plasmons of the structure, a high polarization extinction ratio of 45 dB and relatively large bandwidth of 150 nm around the central wavelength of 1.55 μm are achievable. Furthermore, the application of white graphene as the substrate of graphene decreases the propagation loss of the graphene plasmons and the required applied electric field. It is also shown that the propagation mode of the graphene plasmons can be tuned by changing the temperature and the calculated threshold temperature is 650 K.

  14. MATHEMATIC SIMULATION OF TRANSIENT PROCESS IN A.C. – SYSTEM “ELECTRIC TRACTION NETWORK – LOCOMOTIVE” 1. SWITCH ON LOCOMOTIVE’S POWER CONVERTER IN “FREE PLAY” MODE; PARAMETERS ESTIMATION

    Directory of Open Access Journals (Sweden)

    T. M. Mishchenko

    2010-11-01

    Full Text Available In the article the electric circuit of substitution and mathematical model of the system of alternating current «traction substation − traction mains − electric locomotive DS 3» at switching its power transformer on in the idle mode are presented. Numerical determinations of parameters of traction substation, rails, contact network and transformer are executed; in so doing a special attention is paid to the estimation of dispersion inductance for the primary winding of transformer.

  15. Anti-parallel polarization switching in a triglycine sulfate organic ferroelectric insulator: The role of surface charges

    Science.gov (United States)

    Ma, He; Wu, Zhuangchun; Peng, Dongwen; Wang, Yaojin; Wang, Yiping; Yang, Ying; Yuan, Guoliang

    2018-04-01

    Four consecutive ferroelectric polarization switchings and an abnormal ring-like domain pattern can be introduced by a single tip bias of a piezoresponse force microscope in the (010) triglycine sulfate (TGS) crystal. The external electric field anti-parallel to the original polarization induces the first polarization switching; however, the surface charges of TGS can move toward the tip location and induce the second polarization switching once the tip bias is removed. The two switchings allow a ring-like pattern composed of the central domain with downward polarization and the outer domain with upward polarization. Once the two domains disappear gradually as a result of depolarization, the other two polarization switchings occur one by one at the TGS where the tip contacts. However, the backswitching phenomenon does not occur when the external electric field is parallel to the original polarization. These results can be explained according to the surface charges instead of the charges injected inside.

  16. Experimental Results from a Laser-Triggered, Gas-Insulated, Spark-Gap Switch

    Science.gov (United States)

    Camacho, J. F.; Ruden, E. L.; Domonkos, M. T.

    2017-10-01

    We are performing experiments on a laser-triggered spark-gap switch with the goal of studying the transition from photoionization to current conduction. The discharge of current through the switch is triggered by a focused 532-nm wavelength beam from a Q-switched Nd:YAG laser with a pulse duration of about 10 ns. The trigger pulse is delivered along the longitudinal axis of the switch, and the focal spot can be placed anywhere along the axis of the 5-mm, gas-insulated gap between the switch electrodes. The switch test bed is designed to support a variety of working gases (e.g., Ar, N2) over a range of pressures. Electrical and optical diagnostics are used to measure switch performance as a function of parameters such as charge voltage, trigger pulse energy, insulating gas pressure, and gas species. A Mach-Zehnder imaging interferometer system operating at 532 nm is being used to obtain interferograms of the discharge plasma in the switch. We are also developing a 1064-nm interferometry diagnostic in an attempt to measure plasma free electron and neutral gas density profiles simultaneously within the switch gap. Results from our most recent experiments will be presented.

  17. Non-volatile resistive switching in the Mott insulator (V1-xCrx)2O3

    Science.gov (United States)

    Querré, M.; Tranchant, J.; Corraze, B.; Cordier, S.; Bouquet, V.; Députier, S.; Guilloux-Viry, M.; Besland, M.-P.; Janod, E.; Cario, L.

    2018-05-01

    The discovery of non-volatile resistive switching in Mott insulators related to an electric-field-induced insulator to metal transition (IMT) has paved the way for their use in a new type of non-volatile memories, the Mott memories. While most of the previous studies were dedicated to uncover the resistive switching mechanism and explore the memory potential of chalcogenide Mott insulators, we present here a comprehensive study of resistive switching in the canonical oxide Mott insulator (V1-xCrx)2O3. Our work demonstrates that this compound undergoes a non-volatile resistive switching under electric field. This resistive switching is induced by a Mott transition at the local scale which creates metallic domains closely related to existing phases of the temperature-pressure phase diagram of (V1-xCrx)2O3. Our work demonstrates also reversible resistive switching in (V1-xCrx)2O3 crystals and thin film devices. Preliminary performances obtained on 880 nm thick layers with 500 nm electrodes show the strong potential of Mott memories based on the Mott insulator (V1-xCrx)2O3.

  18. 49 CFR 236.757 - Lock, electric.

    Science.gov (United States)

    2010-10-01

    ... 49 Transportation 4 2010-10-01 2010-10-01 false Lock, electric. 236.757 Section 236.757... Lock, electric. A device to prevent or restrict the movement of a lever, a switch or a movable bridge, unless the locking member is withdrawn by an electrical device, such as an electromagnet, solenoid or...

  19. BCP selector valves and limit switches

    International Nuclear Information System (INIS)

    Rippy, G.L.

    1995-01-01

    This Acceptance Test Procedure (ATP) has been prepared to demonstrate that the Electrical/Instrumentation systems for the BCP stream function as required by project criteria. Specifically, the test will verify the operation of the solenoid valves and associated limit switches installed for the BCP portion of W-OO7H. This equipment is part of the B-Plant Process Condensate Treatment Facility

  20. Line Capacity Expansion and Transmission Switching in Power Systems With Large-Scale Wind Power

    DEFF Research Database (Denmark)

    Villumsen, Jonas Christoffer; Bronmo, Geir; Philpott, Andy B.

    2013-01-01

    In 2020 electricity production from wind power should constitute nearly 50% of electricity demand in Denmark. In this paper we look at optimal expansion of the transmission network in order to integrate 50% wind power in the system, while minimizing total fixed investment cost and expected cost...... of power generation. We allow for active switching of transmission elements to reduce congestion effects caused by Kirchhoff's voltage law. Results show that actively switching transmission lines may yield a better utilization of transmission networks with large-scale wind power and increase wind power...

  1. Dedication of Stotz-Kontakt switches for Spanish utility owners

    International Nuclear Information System (INIS)

    Lopez Vergara, T.; Martin de la Torre, M.; Alminana, J.

    1996-01-01

    The Spanish Utility Owners Group commissioned Empresarios Agrupados to perform the work for the dedication of the S280 series of Stotz-KONTAKT switches and two of its possible accessories. As a results of this process, the components can be used in safety-related applications in the conditions and locations expected. This article describes the different phases of the dedication process: Technical Evaluation considering the application of switches as new or alternative elements, Acceptance Process and Purchasing Documentation. It sets out the main conclusion drawn from each phase. It also includes details of the activities performed by Empresarios Agrupados as part of the seismic qualification of components: selection of the sample to be tested, the definition of electrical tests before and after the seismic test, and the mounting, electrical powering, operating requirements and monitoring of components during seismic tests. (Author)

  2. Three-terminal resistive switching memory in a transparent vertical-configuration device

    International Nuclear Information System (INIS)

    Ungureanu, Mariana; Llopis, Roger; Casanova, Fèlix; Hueso, Luis E.

    2014-01-01

    The resistive switching phenomenon has attracted much attention recently for memory applications. It describes the reversible change in the resistance of a dielectric between two non-volatile states by the application of electrical pulses. Typical resistive switching memories are two-terminal devices formed by an oxide layer placed between two metal electrodes. Here, we report on the fabrication and operation of a three-terminal resistive switching memory that works as a reconfigurable logic component and offers an increased logic density on chip. The three-terminal memory device we present is transparent and could be further incorporated in transparent computing electronic technologies

  3. Passive Q switching of a solar-pumped Nd:YAG laser.

    Science.gov (United States)

    Lando, M; Shimony, Y; Noter, Y; Benmair, R M; Yogev, A

    2000-04-20

    Passive Q switching is a preferable choice for switching the Q factor of a solar-pumped laser because it requires neither a driver nor an electrical power supply. The superior thermal characteristics and durability of Cr(4+):YAG single crystals as passive Q switches for lamp and diode-pumped high-power lasers has been demonstrated. Here we report on an average power of 37 W and a switching efficiency of 80% obtained by use of a solar-pumped Nd:YAG laser Q switched by a Cr(4+):YAG saturable absorber. Concentration of the pumping solar energy on the laser crystal was obtained with a three-stage concentrator, composed of 12 heliostats, a three-dimensional compound parabolic concentrator (CPC) and a two-dimensional CPC. The water-cooled passive Q switch also served as the laser rear mirror. Repetition rates of as much as 50 kHz, at pulse durations between 190 and 310 ns (FWHM) were achieved. From the experimental results, the saturated single-pass power absorption of the Cr(4+):YAG device was estimated as 3 ? 1%.

  4. Resistive switching in TiO{sub 2} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Yang, Lin

    2011-10-26

    The continuing improved performance of the digital electronic devices requires new memory technologies which should be inexpensively fabricated for higher integration capacity, faster operation, and low power consumption. Resistive random access memory has great potential to become the front runner as the non volatile memory technology. The resistance states stored in such cell can remain for long time and can be read out none-destructively by a very small electrical pulse. In this work the typically two terminal memory cells containing a thin TiO{sub 2} layer are studied. Polycrystalline TiO{sub 2} thin films are deposited with atomic layer deposition and magnetron reactive sputtering processes, which are both physically and electrically characterized. The resistive switching cells are constructed in a metal/TiO{sub 2}/metal structure. Electroforming process initiate the cell from the beginning good insulator to a real memory cell to program the resistive states. Multilevel resistive bipolar switching controlled by current compliance is the common characteristic observed in these cells, which is potentially to be used as so called multi-bit memory cells to improve the memory capacity. With different top electrodes of Pt, Cu, Ag the resistive switching behaviors are studied. The switching behaviors are different depending on the top metal such as the minimum current compliance, the endurance of the programmed resistance states and the morphology change during the switching. The temperature dependence of different resistance states are investigated. A reduction of the activation energy and their possible conduction mechanisms is discussed on the base of the basic current conduction models. It is found that the resistance state transfers from semiconductor to metallic property with the reducing resistances. The calculated temperature coefficients of their metallic states on the Cu/TiO{sub 2}/Pt and Ag/TiO{sub 2}/Pt are very close to the reported literature data

  5. A smart microelectromechanical sensor and switch triggered by gas

    KAUST Repository

    Bouchaala, Adam M.; Jaber, Nizar; Shekhah, Osama; Chernikova, Valeriya; Eddaoudi, Mohamed; Younis, Mohammad I.

    2016-01-01

    device based on a single microstructure. Specifically, we demonstrate a smart resonant gas (mass) sensor, which in addition to being capable of quantifying the amount of absorbed gas, can be autonomously triggered as an electrical switch upon exceeding a

  6. Optimization design of the main switch in 12 MeV linear induction accelerator

    International Nuclear Information System (INIS)

    Li Xin; Wang Jinsheng; Ding Hensong; Ye Yi

    2004-01-01

    A method for optimization design of the main switch (using in 12 MeV linear induction accelerator) was introduced. The switch's inductance was decreased from 63.7 nH to 35 nH by optimizing the configuration of the main switch and the size of the electric poles so that the accelerating cavity can get a better rising time of 27 ns. The accelerator's performance can be effectively improved through this method, the feasibility of the method is also proved by testing

  7. Method and system for operating an electric motor

    Science.gov (United States)

    Gallegos-Lopez, Gabriel; Hiti, Silva; Perisic, Milun

    2013-01-22

    Methods and systems for operating an electric motor having a plurality of windings with an inverter having a plurality of switches coupled to a voltage source are provided. A first plurality of switching vectors is applied to the plurality of switches. The first plurality of switching vectors includes a first ratio of first magnitude switching vectors to second magnitude switching vectors. A direct current (DC) current associated with the voltage source is monitored during the applying of the first plurality of switching vectors to the plurality of switches. A second ratio of the first magnitude switching vectors to the second magnitude switching vectors is selected based on the monitoring of the DC current associated with the voltage source. A second plurality of switching vectors is applied to the plurality of switches. The second plurality of switching vectors includes the second ratio of the first magnitude switching vectors to the second magnitude switching vectors.

  8. Uncertainty quantification in capacitive RF MEMS switches

    Science.gov (United States)

    Pax, Benjamin J.

    Development of radio frequency micro electrical-mechanical systems (RF MEMS) has led to novel approaches to implement electrical circuitry. The introduction of capacitive MEMS switches, in particular, has shown promise in low-loss, low-power devices. However, the promise of MEMS switches has not yet been completely realized. RF-MEMS switches are known to fail after only a few months of operation, and nominally similar designs show wide variability in lifetime. Modeling switch operation using nominal or as-designed parameters cannot predict the statistical spread in the number of cycles to failure, and probabilistic methods are necessary. A Bayesian framework for calibration, validation and prediction offers an integrated approach to quantifying the uncertainty in predictions of MEMS switch performance. The objective of this thesis is to use the Bayesian framework to predict the creep-related deflection of the PRISM RF-MEMS switch over several thousand hours of operation. The PRISM switch used in this thesis is the focus of research at Purdue's PRISM center, and is a capacitive contacting RF-MEMS switch. It employs a fixed-fixed nickel membrane which is electrostatically actuated by applying voltage between the membrane and a pull-down electrode. Creep plays a central role in the reliability of this switch. The focus of this thesis is on the creep model, which is calibrated against experimental data measured for a frog-leg varactor fabricated and characterized at Purdue University. Creep plasticity is modeled using plate element theory with electrostatic forces being generated using either parallel plate approximations where appropriate, or solving for the full 3D potential field. For the latter, structure-electrostatics interaction is determined through immersed boundary method. A probabilistic framework using generalized polynomial chaos (gPC) is used to create surrogate models to mitigate the costly full physics simulations, and Bayesian calibration and forward

  9. Resistance switching at the interface of LaAlO3/SrTiO3

    DEFF Research Database (Denmark)

    Chen, Yunzhong; Zhao, J.L.; Sun, J.R.

    2010-01-01

    At the interface of LaAlO3/SrTiO3 with film thickness of 3 unit cells or greater, a reproducible electric-field-induced bipolar resistance switching of the interfacial conduction is observed on nanometer scale by a biased conducting atomic force microscopy under vacuum environment. The switching ...

  10. Electricity and Man (Rev.)

    Energy Technology Data Exchange (ETDEWEB)

    Asimov, Isaac

    1974-01-01

    Our whole industrial civilization depends upon cheap energy streaking out in all directions and under fingertip controls—and that would be very difficult without electric current. It would take enormous ingenuity to find substitutes. If all electricity were shut off, then all electronic devices would be dead. Electric lights would darken. Aluminum would become a rare metal. All factories would have to develop power sources on the spot and would have to switch to primitive, mechanical controls. Every house and every farm would have to give up items we have come to take for granted—not only electric lights, but electric irons, electric toasters, electric water pumps, electric control of furnaces, and so on.

  11. An Electrically Switchable Metal-Organic Framework

    Science.gov (United States)

    Fernandez, Carlos A.; Martin, Paul C.; Schaef, Todd; Bowden, Mark E.; Thallapally, Praveen K.; Dang, Liem; Xu, Wu; Chen, Xilin; McGrail, B. Peter

    2014-08-01

    Crystalline metal organic framework (MOF) materials containing interconnected porosity can be chemically modified to promote stimulus-driven (light, magnetic or electric fields) structural transformations that can be used in a number of devices. Innovative research strategies are now focused on understanding the role of chemical bond manipulation to reversibly alter the free volume in such structures of critical importance for electro-catalysis, molecular electronics, energy storage technologies, sensor devices and smart membranes. In this letter, we study the mechanism for which an electrically switchable MOF composed of Cu(TCNQ) (TCNQ = 7,7,8,8-tetracyanoquinodimethane) transitions from a high-resistance state to a conducting state in a reversible fashion by an applied potential. The actual mechanism for this reversible electrical switching is still not understood even though a number of reports are available describing the application of electric-field-induced switching of Cu(TCNQ) in device fabrication.

  12. Launched electrons in plasma opening switches

    International Nuclear Information System (INIS)

    Mendel, C.W. Jr.; Rochau, G.E.; Sweeney, M.A.; McDaniel, D.H.; Quintenz, J.P.; Savage, M.E.; Lindman, E.L.; Kindel, J.M.

    1989-01-01

    Plasma opening switches have provided a means to improve the characteristics of super-power pulse generators. Recent advances involving plasma control with fast and slow magnetic fields have made these switches more versatile, allowing for improved switch uniformity, triggering, and opening current levels that are set by the level of auxiliary fields. Such switches necessarily involve breaks in the translational symmetry of the transmission line geometry and therefore affect the electron flow characteristics of the line. These symmetry breaks are the result of high electric field regions caused by plasma conductors remaining in the transmission line, ion beams crossing the line, or auxilliary magnetic field regions. Symmetry breaks cause the canonical momentum of the electrons to change, thereby moving them away from the cathode. Additional electrons are pulled from the cathode into the magnetically insulated flow, resulting in an excess of electron flow over that expected for the voltage and line current downstream of the switch. We call these electrons ''launched electrons''. Unless they are recaptured at the cathode or else are fed into the load and used beneficially, they cause a large power loss downstream. This paper will show examples of SuperMite and PBFA II data showing these losses, explain the tools we are using to study them, and discuss the mechanisms we will employ to mitigate the problem. The losses will be reduced primarily by reducing the amount of launched electron flow. 7 refs., 9 figs

  13. Net metering study of switching effects on electromechanical meters[Report prepared for the Measurement Canada Electricity Net Metering Project

    Energy Technology Data Exchange (ETDEWEB)

    Van Overberghe, L. [Measurement Canada, London, ON (Canada)

    2006-03-03

    The feasibility of introducing net metering in the electricity sector was evaluated with particular reference to a project administered by Measurement Canada and Electro-Federation Canada (MicroPower Connect) in collaboration with Natural Resources Canada. The objective of the Measurement Canada Electricity Net Metering Project is to identify and eliminate the barriers introduced by the Electricity and Gas Inspection Act regarding the introduction of net metering. The purpose was to design a device that would allow rotation reversal in a residential electromechanical single phase meter. The device should approximate any fluctuations found in a typical net metering system. A series of tests were conducted to understand the influences, on errors, of forward-to-reverse and reverse-to-forward transitions, specifically to find evidence of error migration and mechanical stress. The project was designed to find and measure the effects of forward reverse switching on an electromechanical meter resulting from a change in energy flow. Twenty metres were calibrated in the forward direction in series from light load to high load. Power factor was not adjustable. Test points were then applied in both the forward and reverse directions. The exercise yielded individual errors which were aggregated to show average found errors after 3,000 transitions. Small shifts in errors were apparent and there was no evidence to support a disk flutter theory. refs., tabs., figs.

  14. Helical EMG module with explosive current opening switches

    International Nuclear Information System (INIS)

    Chernyshev, V.K.; Vakhrushev, V.V.; Volkov, G.I.; Ivanov, V.A.; Fetisov, I.K.

    1990-01-01

    To carry out the experimental work to study plasma properties, electromagnetic sources with 10 6 to 10 8 J of stored energy delivered to the load in microsecond time, are required. Among the current electromagnetic storage devices, the explosive magnetic generators (EMG) are of the largest energy capacity. The disadvantages of this type of generators is relatively long time (ten of microseconds) of electromagnetic energy cumulation in the deformable circuit. To reduce the time of energy transfer to the load to a microsecond range the switching scheme is generally used, where the cumulation circuit and that of the load are separated and connected in parallel via a switching element (opening switch) providing generation of desired power. In this paper, some ways and means of designing opening switches to generate high current pulses have been investigated. The opening switches to generate high current pulses have been investigated. The opening switches which operation is based on mechanic destruction of the conductor using high explosive, have the highest and most reliable performance. The authors have explored the mechanic disruption of a thin conductor (foil), the technique based on throwing the foil at the ribbed barrier of electric insulator material. The report presents the data obtained in studying the operation of this type of opening switch having cylindrical shape, 200 mm in diameter and 200 mm long, designed for generation of 5.5 MA current pulse in the load

  15. Switching, storage, and erasure effects in a superconducting thin film

    International Nuclear Information System (INIS)

    Testardi, L.R.

    1976-01-01

    Thin niobium films can be switched from a superconducting to a resistive state permanently by application of a short electrical pulse. Application of a short pulse of opposite polarity returns the film to the superconducting state

  16. Energy conversion loops for flux-switching PM machine analysis

    NARCIS (Netherlands)

    Ilhan, E.; Motoasca, T.E.; Paulides, J.J.H.; Lomonova, E.

    2012-01-01

    Induction and synchronous machines have traditionally been the first choice of automotive manufacturers for electric/hybrid vehicles. However, these conventional machines are not able anymore to meet the increasing demands for a higher energy density due to space limitation in cars. Flux-switching

  17. Neutron and gamma irradiation effects on power semiconductor switches

    Science.gov (United States)

    Schwarze, G. E.; Frasca, A. J.

    1990-01-01

    The performance characteristics of high power semiconductor switches subjected to high levels of neutron fluence and gamma dose must be known by the designer of the power conditioning, control and transmission subsystem of space nuclear power systems. Location and the allowable shielding mass budget will determine the level of radiation tolerance required by the switches to meet performance and reliability requirements. Neutron and gamma ray interactions with semiconductor materials and how these interactions affect the electrical and switching characteristics of solid state power switches is discussed. The experimental measurement system and radiation facilities are described. Experimental data showing the effects of neutron and gamma irradiation on the performance characteristics are given for power-type NPN Bipolar Junction Transistors (BJTs), and Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs). BJTs show a rapid decrease in gain, blocking voltage, and storage time for neutron irradiation, and MOSFETs show a rapid decrease in the gate threshold voltage for gamma irradiation.

  18. Electrostatically actuated resonant switches for earthquake detection

    KAUST Repository

    Ramini, Abdallah H.

    2013-04-01

    The modeling and design of electrostatically actuated resonant switches (EARS) for earthquake and seismic applications are presented. The basic concepts are based on operating an electrically actuated resonator close to instability bands of frequency, where it is forced to collapse (pull-in) if operated within these bands. By careful tuning, the resonator can be made to enter the instability zone upon the detection of the earthquake signal, thereby pulling-in as a switch. Such a switching action can be functionalized for useful functionalities, such as shutting off gas pipelines in the case of earthquakes, or can be used to activate a network of sensors for seismic activity recording in health monitoring applications. By placing a resonator on a printed circuit board (PCB) of a natural frequency close to that of the earthquake\\'s frequency, we show significant improvement on the detection limit of the EARS lowering it considerably to less than 60% of the EARS by itself without the PCB. © 2013 IEEE.

  19. Computerized precision control of a synchronous high voltage discharge switch for the beam separation system of the LEP e+/e- collider

    International Nuclear Information System (INIS)

    Dieperink, J.H.; Finnigan, A.; Kalbreier, W.; Keizer, R.L.; Laffin, M.; Mertens, V.

    1989-01-01

    Electrostatic separators are used to separate the beams in LEP. The counter-rotating beams are eventually brought into collision in the four low beta insertions, using switches to discharge simultaneously four high voltage (HV) circuits. Each switch consists of four spark gaps mounted in a pressure vessel. A reduction of the gap widths below the self ignition instance by electric motors results in the initiation of the discharges. Synchronization is ensured by the electrical coupling of the electrodes connected to the ground. The design and performance of the computerized precision control of the discharge switch are described. The dynamic characteristics of the prototype switch are also presented. 5 refs., 5 figs

  20. A smart microelectromechanical sensor and switch triggered by gas

    KAUST Repository

    Bouchaala, Adam M.

    2016-07-05

    There is an increasing interest to realize smarter sensors and actuators that can deliver a multitude of sophisticated functionalities while being compact in size and of low cost. We report here combining both sensing and actuation on the same device based on a single microstructure. Specifically, we demonstrate a smart resonant gas (mass) sensor, which in addition to being capable of quantifying the amount of absorbed gas, can be autonomously triggered as an electrical switch upon exceeding a preset threshold of absorbed gas. Toward this, an electrostatically actuated polymer microbeam is fabricated and is then functionalized with a metal-organic framework, namely, HKUST-1. The microbeam is demonstrated to absorb vapors up to a certain threshold, after which is shown to collapse through the dynamic pull-in instability. Upon pull-in, the microstructure can be made to act as an electrical switch to achieve desirable actions, such as alarming.

  1. A smart microelectromechanical sensor and switch triggered by gas

    Science.gov (United States)

    Bouchaala, Adam; Jaber, Nizar; Shekhah, Osama; Chernikova, Valeriya; Eddaoudi, Mohamed; Younis, Mohammad I.

    2016-07-01

    There is an increasing interest to realize smarter sensors and actuators that can deliver a multitude of sophisticated functionalities while being compact in size and of low cost. We report here combining both sensing and actuation on the same device based on a single microstructure. Specifically, we demonstrate a smart resonant gas (mass) sensor, which in addition to being capable of quantifying the amount of absorbed gas, can be autonomously triggered as an electrical switch upon exceeding a preset threshold of absorbed gas. Toward this, an electrostatically actuated polymer microbeam is fabricated and is then functionalized with a metal-organic framework, namely, HKUST-1. The microbeam is demonstrated to absorb vapors up to a certain threshold, after which is shown to collapse through the dynamic pull-in instability. Upon pull-in, the microstructure can be made to act as an electrical switch to achieve desirable actions, such as alarming.

  2. Electric-field-induced magnetic domain writing in a Co wire

    Science.gov (United States)

    Tanaka, Yuki; Hirai, Takamasa; Koyama, Tomohiro; Chiba, Daichi

    2018-05-01

    We have demonstrated that the local magnetization in a Co microwire can be switched by an application of a gate voltage without using any external magnetic fields. The electric-field-induced reversible ferromagnetic phase transition was used to realize this. An internal stray field from a ferromagnetic gate electrode assisted the local domain reversal in the Co wire. This new concept of electrical domain switching may be useful for dramatically reducing the power consumption of writing information in a magnetic racetrack memory, in which a shift of a magnetic domain by electric current is utilized.

  3. A nonlinear HP-type complementary resistive switch

    Directory of Open Access Journals (Sweden)

    Paul K. Radtke

    2016-05-01

    Full Text Available Resistive Switching (RS is the change in resistance of a dielectric under the influence of an external current or electric field. This change is non-volatile, and the basis of both the memristor and resistive random access memory. In the latter, high integration densities favor the anti-serial combination of two RS-elements to a single cell, termed the complementary resistive switch (CRS. Motivated by the irregular shape of the filament protruding into the device, we suggest a nonlinearity in the resistance-interpolation function, characterized by a single parameter p. Thereby the original HP-memristor is expanded upon. We numerically simulate and analytically solve this model. Further, the nonlinearity allows for its application to the CRS.

  4. A nonlinear HP-type complementary resistive switch

    Science.gov (United States)

    Radtke, Paul K.; Schimansky-Geier, Lutz

    2016-05-01

    Resistive Switching (RS) is the change in resistance of a dielectric under the influence of an external current or electric field. This change is non-volatile, and the basis of both the memristor and resistive random access memory. In the latter, high integration densities favor the anti-serial combination of two RS-elements to a single cell, termed the complementary resistive switch (CRS). Motivated by the irregular shape of the filament protruding into the device, we suggest a nonlinearity in the resistance-interpolation function, characterized by a single parameter p. Thereby the original HP-memristor is expanded upon. We numerically simulate and analytically solve this model. Further, the nonlinearity allows for its application to the CRS.

  5. Resistive switching via the converse magnetoelectric effect in ferromagnetic multilayers on ferroelectric substrates.

    Science.gov (United States)

    Pertsev, N A; Kohlstedt, H

    2010-11-26

    A voltage-controlled resistive switching is predicted for ferromagnetic multilayers and spin valves mechanically coupled to a ferroelectric substrate. The switching between low- and high-resistance states results from the strain-driven magnetization reorientations by about 90°, which are shown to occur in ferromagnetic layers with a high magnetostriction and weak cubic magnetocrystalline anisotropy. Such reorientations, not requiring external magnetic fields, can be realized experimentally by applying moderate electric field to a thick substrate (bulk or membrane type) made of a relaxor ferroelectric having ultrahigh piezoelectric coefficients. The proposed multiferroic hybrids exhibiting giant magnetoresistance may be employed as electric-write nonvolatile magnetic memory cells with nondestructive readout.

  6. Power quality improvement in highly varying loads using thyristor-switched capacitor

    Energy Technology Data Exchange (ETDEWEB)

    Poshtan, M. [Petroleum Inst., Abu Dhabi (United Arab Emirates). Dept. of Electrical Engineering; Mokhtari, H.; Esmaeili, A. [Sharif Univ. of Technology, Tehran (Iran, Islamic Republic of). Dept. of Electrical Engineering

    2007-07-01

    Ordinary contactor-based-capacitor (CBC) banks may not be able to response quickly enough in highly varying electrical loads such as welding machines or arc furnace loads. Thyristor-switched capacitor (TSC) banks are therefore used to compensate for reactive power of highly varying loads. In this paper, the performance of a TSC was compared to CBC banks. The 2 systems, were also compared in terms of energy saving in transmission systems. Simulations carried out using PSCAD/EMTDC software showed that there was a considerable difference in the performance of the 2 systems. The shortcomings of existing CBC systems include slow response of mechanical switching systems; problem of switching more than one bank into the system; and, voltage/current transients during on-off switching. 3 refs., 6 tabs., 14 figs.

  7. Effect of oxide insertion layer on resistance switching properties of copper phthalocyanine

    Science.gov (United States)

    Joshi, Nikhil G.; Pandya, Nirav C.; Joshi, U. S.

    2013-02-01

    Organic memory device showing resistance switching properties is a next-generation of the electrical memory unit. We have investigated the bistable resistance switching in current-voltage (I-V) characteristics of organic diode based on copper phthalocyanine (CuPc) film sandwiched between aluminum (Al) electrodes. Pronounced hysteresis in the I-V curves revealed a resistance switching with on-off ratio of the order of 85%. In order to control the charge injection in the CuPc, nanoscale indium oxide buffer layer was inserted to form Al/CuPc/In2O3/Al device. Analysis of I-V measurements revealed space charge limited switching conduction at the Al/CuPc interface. The traps in the organic layer and charge blocking by oxide insertion layer have been used to explain the absence of resistance switching in the oxide buffer layered memory device cell. Present study offer potential applications for CuPc organic semiconductor in low power non volatile resistive switching memory and logic circuits.

  8. Three-tier multi-granularity switching system based on PCE

    Science.gov (United States)

    Wang, Yubao; Sun, Hao; Liu, Yanfei

    2017-10-01

    With the growing demand for business communications, electrical signal processing optical path switching can't meet the demand. The multi-granularity switch system that can improve node routing and switching capabilities came into being. In the traditional network, each node is responsible for calculating the path; synchronize the whole network state, which will increase the burden on the network, so the concept of path calculation element (PCE) is proposed. The PCE is responsible for routing and allocating resources in the network1. In the traditional band-switched optical network, the wavelength is used as the basic routing unit, resulting in relatively low wavelength utilization. Due to the limitation of wavelength continuity, the routing design of the band technology becomes complicated, which directly affects the utilization of the system. In this paper, optical code granularity is adopted. There is no continuity of the optical code, and the number of optical codes is more flexible than the wavelength. For the introduction of optical code switching, we propose a Code Group Routing Entity (CGRE) algorithm. In short, the combination of three-tier multi-granularity optical switching system and PCE can simplify the network structure, reduce the node load, and enhance the network scalability and survivability. Realize the intelligentization of optical network.

  9. Switching behaviour of individual Ag-TCNQ nanowires: an in situ transmission electron microscopy study

    Science.gov (United States)

    Ran, Ke; Rösner, Benedikt; Butz, Benjamin; Fink, Rainer H.; Spiecker, Erdmann

    2016-10-01

    The organic semiconductor silver-tetracyanoquinodimethane (Ag-TCNQ) exhibits electrical switching and memory characteristics. Employing a scanning tunnelling microscopy setup inside a transmission electron microscope, the switching behaviour of individual Ag-TCNQ nanowires (NWs) is investigated in detail. For a large number of NWs, the switching between a high (OFF) and a low (ON) resistance state was successfully stimulated by negative bias sweeps. Fitting the experimental I-V curves with a Schottky emission function makes the switching features prominent and thus enables a direct evaluation of the switching process. A memory cycle including writing, reading and erasing features is demonstrated at an individual NW. Moreover, electronic failure mechanisms due to Joule heating are discussed. These findings have a significant impact on our understanding of the switching behaviour of Ag-TCNQ.

  10. A cross-stacked plasmonic nanowire network for high-contrast femtosecond optical switching.

    Science.gov (United States)

    Lin, Yuanhai; Zhang, Xinping; Fang, Xiaohui; Liang, Shuyan

    2016-01-21

    We report an ultrafast optical switching device constructed by stacking two layers of gold nanowires into a perpendicularly crossed network, which works at a speed faster than 280 fs with an on/off modulation depth of about 22.4%. The two stacks play different roles in enhancing consistently the optical switching performance due to their different dependence on the polarization of optical electric fields. The cross-plasmon resonance based on the interaction between the perpendicularly stacked gold nanowires and its Fano-coupling with Rayleigh anomaly is the dominant mechanism for such a high-contrast optical switching device.

  11. Oxygen-ion-migration-modulated bipolar resistive switching and complementary resistive switching in tungsten/indium tin oxide/gold memory device

    Science.gov (United States)

    Wu, Xinghui; Zhang, Qiuhui; Cui, Nana; Xu, Weiwei; Wang, Kefu; Jiang, Wei; Xu, Qixing

    2018-06-01

    In this paper, we report our investigation of room-temperature-fabricated tungsten/indium tin oxide/gold (W/ITO/Au) resistive random access memory (RRAM), which exhibits asymmetric bipolar resistive switching (BRS) behavior. The device displays good write/erase endurance and data retention properties. The device shows complementary resistive switching (CRS) characteristics after controlling the compliance current. A WO x layer electrically formed at the W/ITO in the forming process. Mobile oxygen ions within ITO migrate toward the electrode/ITO interface and produce a semiconductor-like layer that acts as a free-carrier barrier. The CRS characteristic here can be elucidated in light of the evolution of an asymmetric free-carrier blocking layer at the electrode/ITO interface.

  12. Micro optical fiber display switch based on the magnetohydrodynamic (MHD) principle

    Science.gov (United States)

    Lian, Kun; Heng, Khee-Hang

    2001-09-01

    This paper reports on a research effort to design, microfabricate and test an optical fiber display switch based on magneto hydrodynamic (MHD) principal. The switch is driven by the Lorentz force and can be used to turn on/off the light. The SU-8 photoresist and UV light source were used for prototype fabrication in order to lower the cost. With a magnetic field supplied by an external permanent magnet, and a plus electrical current supplied across the two inert sidewall electrodes, the distributed body force generated will produce a pressure difference on the fluid mercury in the switch chamber. By change the direction of current flow, the mercury can turn on or cut off the light pass in less than 10 ms. The major advantages of a MHD-based micro-switch are that it does not contain any solid moving parts and power consumption is much smaller comparing to the relay type switches. This switch can be manufactured by molding gin batch production and may have potential applications in extremely bright traffic control,, high intensity advertising display, and communication.

  13. Particle in cell simulation of peaking switch for breakdown evaluation

    Energy Technology Data Exchange (ETDEWEB)

    Umbarkar, Sachin B.; Bindu, S.; Mangalvedekar, H.A.; Saxena, A.; Singh, N.M., E-mail: sachin.b.umbarkar@gmail.com [Department of Electric Engineering, Veermata Jijabai Technological Institute, Mumbai (India); Sharma, Archana; Saroj, P.C.; Mittal, K.C. [Accelerator Pulse Power Division, Bhabha Atomic Research Centre, Mumbai (India)

    2014-07-01

    Marx generator connected to peaking capacitor and peaking switch can generate Ultra-Wideband (UWB) radiation. A new peaking switch is designed for converting the existing nanosecond Marx generator to a UWB source. The paper explains the particle in cell (PIC) simulation for this peaking switch, using MAGIC 3D software. This peaking switch electrode is made up of copper tungsten material and is fixed inside the hermitically sealed derlin material. The switch can withstand a gas pressure up to 13.5 kg/cm{sup 2}. The lower electrode of the switch is connected to the last stage of the Marx generator. Initially Marx generator (without peaking stage) in air; gives the output pulse with peak amplitude of 113.75 kV and pulse rise time of 25 ns. Thus, we design a new peaking switch to improve the rise time of output pulse and to pressurize this peaking switch separately (i.e. Marx and peaking switch is at different pressure). The PIC simulation gives the particle charge density, current density, E counter plot, emitted electron current, and particle energy along the axis of gap between electrodes. The charge injection and electric field dependence on ionic dissociation phenomenon are briefly analyzed using this simulation. The model is simulated with different gases (N{sub 2}, H{sub 2}, and Air) under different pressure (2 kg/cm{sup 2}, 5 kg/cm{sup 2}, 10 kg/cm{sup 2}). (author)

  14. Antiferroelectric polarization switching and dynamic scaling of energy storage: A Monte Carlo simulation

    Science.gov (United States)

    Huang, B. Y.; Lu, Z. X.; Zhang, Y.; Xie, Y. L.; Zeng, M.; Yan, Z. B.; Liu, J.-M.

    2016-05-01

    The polarization-electric field hysteresis loops and the dynamics of polarization switching in a two-dimensional antiferroelectric (AFE) lattice submitted to a time-oscillating electric field E(t) of frequency f and amplitude E0, is investigated using Monte Carlo simulation based on the Landau-Devonshire phenomenological theory on antiferroelectrics. It is revealed that the AFE double-loop hysteresis area A, i.e., the energy loss in one cycle of polarization switching, exhibits the single-peak frequency dispersion A(f), suggesting the unique characteristic time for polarization switching, which is independent of E0 as long as E0 is larger than the quasi-static coercive field for the antiferroelectric-ferroelectric transitions. However, the dependence of recoverable stored energy W on amplitude E0 seems to be complicated depending on temperature T and frequency f. A dynamic scaling behavior of the energy loss dispersion A(f) over a wide range of E0 is obtained, confirming the unique characteristic time for polarization switching of an AFE lattice. The present simulation may shed light on the dynamics of energy storage and release in AFE thin films.

  15. DIAGNOSTIC FEATURES RESEARCH OF AC ELECTRIC POINT MOTORS

    Directory of Open Access Journals (Sweden)

    S. YU. Buryak

    2014-05-01

    Full Text Available Purpose.Considerable responsibility for safety of operation rests on signal telephone and telegraph department of railway. One of the most attackable nodes (both automation systems, and railway in whole is track switches. The aim of this investigation is developing such system for monitoring and diagnostics of track switches, which would fully meet the requirements of modern conditions of high-speed motion and heavy trains and producing diagnostics, collection and systematization of data in an automated way. Methodology. In order to achieve the desired objectives research of a structure and the operating principle description of the switch electric drive, sequence of triggering its main units were carried out. The operating characteristics and settings, operating conditions, the causes of failures in the work, andrequirements for electric drives technology and their service were considered and analyzed. Basic analysis principles of dependence of nature of the changes the current waveform, which flows in the working circuit of AC electric point motor were determined. Technical implementation of the monitoring and diagnosing system the state of AC electric point motors was carried out. Findings. Signals taken from serviceable and defective electric turnouts were researched. Originality. Identified a strong interconnectionbetween the technical condition of the track switchand curve shape that describes the current in the circuit of AC electric point motor during operation which is based on the research processes that have influence on it during operation. Practical value. Shown the principles of the technical approach to the transition from scheduled preventive maintenance to maintenance of real condition for a more objective assessment and thus more rapid response to emerging or failures when they occur gradually, damages and any other shortcomings in the work track switch AC drives.

  16. Design comparison of single phase outer and inner-rotor hybrid excitation flux switching motor for hybrid electric vehicles

    Science.gov (United States)

    Mazlan, Mohamed Mubin Aizat; Sulaiman, Erwan; Husin, Zhafir Aizat; Othman, Syed Muhammad Naufal Syed; Khan, Faisal

    2015-05-01

    In hybrid excitation machines (HEMs), there are two main flux sources which are permanent magnet (PM) and field excitation coil (FEC). These HEMs have better features when compared with the interior permanent magnet synchronous machines (IPMSM) used in conventional hybrid electric vehicles (HEVs). Since all flux sources including PM, FEC and armature coils are located on the stator core, the rotor becomes a single piece structure similar with switch reluctance machine (SRM). The combined flux generated by PM and FEC established more excitation fluxes that are required to produce much higher torque of the motor. In addition, variable DC FEC can control the flux capabilities of the motor, thus the machine can be applied for high-speed motor drive system. In this paper, the comparisons of single-phase 8S-4P outer and inner rotor hybrid excitation flux switching machine (HEFSM) are presented. Initially, design procedures of the HEFSM including parts drawing, materials and conditions setting, and properties setting are explained. Flux comparisons analysis is performed to investigate the flux capabilities at various current densities. Then the flux linkages of PM with DC FEC of various DC FEC current densities are examined. Finally torque performances are analyzed at various armature and FEC current densities for both designs. As a result, the outer-rotor HEFSM has higher flux linkage of PM with DC FEC and higher average torque of approximately 10% when compared with inner-rotor HEFSM.

  17. Impact Analysis of Electrical Current Characteristics in Relay Function for Electrical and Electronic Protection

    International Nuclear Information System (INIS)

    Syirrazie Che Soh; Harzawadi Hasim

    2013-01-01

    This paper is to study effect of electrical current on relay reaction, which has coil and switch inside the relay. An analysis on the electrical current will be conducted to determine current limitation for relay activation purpose. The result of analysis showing that current characteristic of relay and applied load will present their affect to the relay function performance. Finding from this result will bring the idea to develop a suitable design circuit for electrical and electronic protection. (author)

  18. Frequency response function of motors for switching noise energy with a new experimental approach

    International Nuclear Information System (INIS)

    Kim, Hyunsu; Yoon, Jong-Yun

    2017-01-01

    Switching energy in electrical vehicles can create serious noise from the motors. However, the characteristics of switching noise in vehicle motors are not clear due to the complexity of measuring them. This study proposes a new experimental method to investigate the switching noise energy of a vehicle motor based on frequency response functions. A function generator-amplifier system is used to gen- erate the switching energy instead of the complex battery-inverter system that has previously been used to examine the noise energy characteristics. Even though newly adapted experimental method is simple, the switching noise energy was explicitly investigated under various input signals. Thus, this simple new method can be used to investigate the dynamic characteristics of noise energy in a vehicle motor

  19. Frequency response function of motors for switching noise energy with a new experimental approach

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Hyunsu [Ensemble Center for Automotive Research, Seoul (Korea, Republic of); Yoon, Jong-Yun [Incheon National University, Incheon (Korea, Republic of)

    2017-06-15

    Switching energy in electrical vehicles can create serious noise from the motors. However, the characteristics of switching noise in vehicle motors are not clear due to the complexity of measuring them. This study proposes a new experimental method to investigate the switching noise energy of a vehicle motor based on frequency response functions. A function generator-amplifier system is used to gen- erate the switching energy instead of the complex battery-inverter system that has previously been used to examine the noise energy characteristics. Even though newly adapted experimental method is simple, the switching noise energy was explicitly investigated under various input signals. Thus, this simple new method can be used to investigate the dynamic characteristics of noise energy in a vehicle motor.

  20. Pulsed power opening switch research at the University of New Mexico

    International Nuclear Information System (INIS)

    Humphries, S. Jr.

    1987-01-01

    Opening switch research at the University of New Mexico (UNM) is directed toward moderate-current (--10 kA) devices with potential applications to high-power charged particle accelerators. Two devices with the capacity for controlling gigawatt high-voltage circuits, the grid-controlled plasma flow switch and the scanned-beam switch, are under investigation. Both switches are conceptually simple; they involve little collective physics and are within the capabilities of current technology. In the plasma flow switch, the flux of electrons into a high-voltage power gap is controlled by a low-voltage control grid. Plasma generation is external to, and independent of, the power circuit. In the closed phase, plasma fills the gap so that the switch has a low on-state impedance. Pulse repetition rates in the megahertz range should be feasible. In single-shot proof-of-principle experiments, a small area switch modulated a 3-MW circuit; a 20-ns opening time was observed. The scanned-beam switch will utilize electric field deflection to direct the power of a sheet electron beam. The beam is to be alternately scanned to two inverse diodes connected to output transmission lines. The switch is expected to generate continuous-wave pulse trains for applications such as high-frequency induction linacs. Theoretical studies indicate that 10-GW devices in the 100-MHz range with 70-percent efficiency should be technologically feasible

  1. Transparent ceramic photo-optical semiconductor high power switches

    Science.gov (United States)

    Werne, Roger W.; Sullivan, James S.; Landingham, Richard L.

    2016-01-19

    A photoconductive semiconductor switch according to one embodiment includes a structure of sintered nanoparticles of a high band gap material exhibiting a lower electrical resistance when excited by light relative to an electrical resistance thereof when not exposed to the light. A method according to one embodiment includes creating a mixture comprising particles, at least one dopant, and at least one solvent; adding the mixture to a mold; forming a green structure in the mold; and sintering the green structure to form a transparent ceramic. Additional system, methods and products are also presented.

  2. Variable-Reluctance Motor For Electric Vehicles

    Science.gov (United States)

    Lang, Jeffrey H.

    1987-01-01

    Report describes research on variable-reluctance electric-motor drive for eventual use in electric-vehicle propulsion. Primary design and performance criteria were torque and power output per unit mass of motor, cost, and drive efficiency. For each criterion, optimized drive design developed, and designs unified to yield single electric-vehicle drive. Scaled-down motor performed as expected. Prototype of paraplegic lift operated by toggle switch and joystick. Lift plugs into household electrical outlet for recharging when not in use.

  3. High-power subnanosecond operation of a bistable optically controlled semiconductor switch (BOSS)

    International Nuclear Information System (INIS)

    Stoudt, D.C.; Richardson, M.A.; Demske, D.L.; Roush, R.A.; Eure, K.W.

    1994-01-01

    Recent high-power, subnanosecond-switching results of the Bistable Optically controlled Semiconductor Switch (BOSS) are presented. The process of persistent photoconductivity followed by photo-quenching have been demonstrated at megawatt power levels in copper-compensated, silicon-doped, semi-insulating gallium arsenide. These processes allow a switch to be developed that can be closed by the application of one laser pulse and opened by the application of a second laser pulse with a wavelength equal to twice that of the first laser. Switch closure is primarily achieved by elevating electrons from a deep copper center which has been diffused into the material. The opening phase is a two-step process which relies initially on the absorption of the 2-μm laser causing electrons to be elevated from the valance band back into the copper center, and finally on the recombination of electrons in the conduction band with boles in the valance band. The second step requires a sufficient concentration of recombination centers (RC) in the material for opening to occur in the subnanosecond regime. These RC's are generated in the bulk GaAs material by fast-neutron irradiation (∼ 1 MeV) at a fluence of about 3 x 10 15 cm -2 . High-power switching results which demonstrate that the BOSS switch can be opened in the subnanosecond regime are presented for the first time. Neutron-irradiated BOSS devices have been opened against a rising electric field of about 20 kV/cm (10 kV) in a time less than one nanosecond. Kilovolt electrical pulses have been generated with a FWHM of roughly 250 picoseconds

  4. Field-Distortion Air-Insulated Switches for Next-Generation Pulsed-Power Accelerators

    Energy Technology Data Exchange (ETDEWEB)

    Wisher, Matthew Louis [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Johns, Owen M. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Breden, Eric Wayne [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Calhoun, Jacob Daniel [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Gruner, Frederick Rusticus [Kinetech LLC, Cedar Crest, NM (United States); Hohlfelder, Robert James [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Mulville, Thomas D. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Muron, David J. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Stoltzfus, Brian S. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Stygar, William A. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

    2017-09-01

    We have developed two advanced designs of a field-distortion air-insulated spark-gap switch that reduce the size of a linear-transformer-driver (LTD) brick. Both designs operate at 200 kV and a peak current of ~50 kA. At these parameters, both achieve a jitter of less than 2 ns and a prefire rate of ~0.1% over 5000 shots. We have reduced the number of switch parts and assembly steps, which has resulted in a more uniform, design-driven assembly process. We will characterize the performance of tungsten-copper and graphite electrodes, and two different electrode geometries. The new switch designs will substantially improve the electrical and operational performance of next-generation pulsed-power accelerators.

  5. Long-term RF burn-in effects on dielectric charging of MEMS capacitive switches

    KAUST Repository

    Molinero, David G.; Luo, Xi; Shen, Chao; Palego, Cristiano; Hwang, James; Goldsmith, Charles L.

    2013-01-01

    This paper experimentally quantified the long-term effects of RF burn-in, in terms of burn-in and recovery times, and found the effects to be semipermanent. Specifically, most of the benefit could be realized after approximately 20 min of RF burn-in, which would then last for several months. Additionally, since similar effects were observed on both real and faux switches, the effects appeared to be of electrical rather than mechanical nature. These encouraging results should facilitate the application of the switches in RF systems, where high RF power could be periodically applied to rejuvenate the switches. © 2001-2011 IEEE.

  6. Long-term RF burn-in effects on dielectric charging of MEMS capacitive switches

    KAUST Repository

    Molinero, David G.

    2013-03-01

    This paper experimentally quantified the long-term effects of RF burn-in, in terms of burn-in and recovery times, and found the effects to be semipermanent. Specifically, most of the benefit could be realized after approximately 20 min of RF burn-in, which would then last for several months. Additionally, since similar effects were observed on both real and faux switches, the effects appeared to be of electrical rather than mechanical nature. These encouraging results should facilitate the application of the switches in RF systems, where high RF power could be periodically applied to rejuvenate the switches. © 2001-2011 IEEE.

  7. Switching a Perpendicular Ferromagnetic Layer by Competing Spin Currents

    Science.gov (United States)

    Ma, Qinli; Li, Yufan; Gopman, D. B.; Kabanov, Yu. P.; Shull, R. D.; Chien, C. L.

    2018-03-01

    An ultimate goal of spintronics is to control magnetism via electrical means. One promising way is to utilize a current-induced spin-orbit torque (SOT) originating from the strong spin-orbit coupling in heavy metals and their interfaces to switch a single perpendicularly magnetized ferromagnetic layer at room temperature. However, experimental realization of SOT switching to date requires an additional in-plane magnetic field, or other more complex measures, thus severely limiting its prospects. Here we present a novel structure consisting of two heavy metals that delivers competing spin currents of opposite spin indices. Instead of just canceling the pure spin current and the associated SOTs as one expects and corroborated by the widely accepted SOTs, such devices manifest the ability to switch the perpendicular CoFeB magnetization solely with an in-plane current without any magnetic field. Magnetic domain imaging reveals selective asymmetrical domain wall motion under a current. Our discovery not only paves the way for the application of SOT in nonvolatile technologies, but also poses questions on the underlying mechanism of the commonly believed SOT-induced switching phenomenon.

  8. Electrical transport in crystalline phase change materials

    International Nuclear Information System (INIS)

    Woda, Michael

    2012-01-01

    In this thesis, the electrical transport properties of crystalline phase change materials are discussed. Phase change materials (PCM) are a special class of semiconducting and metallic thin film alloys, typically with a high amount of the group five element antimony or the group six element tellurium, such as Ge 2 Sb 2 Te 5 . The unique property portfolio of this material class makes it suitable for memory applications. PCMs reveal fast switching between two stable room-temperature phases (amorphous and crystalline) realized by optical laser or electrical current pulses in memory devices. Additionally, a pronounced property contrast in form of optical reflectivity and electrical conductivity between the amorphous and crystalline phase is the characteristic fingerprint of PCMs. The emerging electrical solid state memory PCRAM is a very promising candidate to replace Flash memory in the near future or to even become a universal memory, which is non-volatile and shows the speed and cyclability of DRAM. One of the main technological challenges is the switching process into the amorphous state, which is the most power demanding step. In order to reduce the switching power, the crystalline resistivity needs to be increased at a given voltage. Thus understanding and tayloring of this property is mandatory. In this work, first the technological relevance, i.e. optical and electrical memory concepts based on PCMs are introduced. Subsequently a description of the physical properties of PCMs in four categories is given. Namely, structure, kinetics, optical properties and electrical properties are discussed. Then important recent developments such as the identification of resonant bonding in crystalline PCMs and a property predicting coordination scheme are briefly reviewed. The following chapter deals with the theoretical background of electrical transport, while the next chapter introduces the experimental techniques: Sputtering, XRR, XRD, DSC, thermal annealing

  9. Software-Controlled Next Generation Optical Circuit Switching for HPC and Cloud Computing Datacenters

    Directory of Open Access Journals (Sweden)

    Muhammad Imran

    2015-11-01

    Full Text Available In this paper, we consider the performance of optical circuit switching (OCS systems designed for data center networks by using network-level simulation. Recent proposals have used OCS in data center networks but the relatively slow switching times of OCS-MEMS switches (10–100 ms and the latencies of control planes in these approaches have limited their use to the largest data center networks with workloads that last several seconds. Herein, we extend the applicability and generality of these studies by considering dynamically changing short-lived circuits in software-controlled OCS switches, using the faster switching technologies that are now available. The modelled switch architecture features fast optical switches in a single hop topology with a centralized, software-defined optical control plane. We model different workloads with various traffic aggregation parameters to investigate the performance of such designs across usage patterns. Our results show that, with suitable choices for the OCS system parameters, delay performance comparable to that of electrical data center networks can be obtained.

  10. Effects of doping concentration ratio on electrical characterization in pseudomorphic HEMT-based MMIC switches for ICT system

    Science.gov (United States)

    Mun, Jae-Kyoung; Oh, Jung-Hun; Sung, Ho-Kun; Wang, Cong

    2015-12-01

    The effects of the doping concentration ratios between upper and lower silicon planar-doping layers on the DC and RF characteristics of the double planar doped pseudomorphic high electron mobility transistors (pHEMTs) are investigated. From the device simulation, an increase of maximum extrinsic transconductance and a decrease of total on- and off-state capacitances are observed, as well as an increase of the upper to lower planar-doping concentration ratios (UTLPDR), which give rise to an enhancement of the switching speed and isolation characteristics. On the basis of simulation results, two types of pHEMTs are fabricated with two different UTLPDRs of 4:1 and 1:2. After applying these two types' pHEMTs, single-pole-double-throw (SPDT) transmitter/receiver monolithic microwave integrated circuit (MMIC) switches are also designed and fabricated. The SPDT MMIC switch with a 4:1 UTLPDR shows an insertion loss of 0.58 dB, isolation of 40.2 dB, and switching speed of 100 ns, respectively, which correspondingly indicate a 0.23 dB lower insertion loss, 2.90 dB higher isolation and 2.5 times faster switching speed than those of 1:2 UTLPDR at frequency range of 2-6 GHz. From the simulation results and comparative studies, we propose that the UTLPDR must be greater than 4:1 for the best switching performance. With the abovementioned excellent performances, the proposed switch would be quite promising in the application of information and communications technology system.

  11. Rapid fuel switching from coal to natural gas through effective carbon pricing

    Science.gov (United States)

    Wilson, I. A. Grant; Staffell, Iain

    2018-05-01

    Great Britain's overall carbon emissions fell by 6% in 2016, due to cleaner electricity production. This was not due to a surge in low-carbon nuclear or renewable sources; instead it was the much-overlooked impact of fuel switching from coal to natural gas generation. This Perspective considers the enabling conditions in Great Britain and the potential for rapid fuel switching in other coal-reliant countries. We find that spare generation and fuel supply-chain capacity must already exist for fuel switching to deliver rapid carbon savings, and to avoid further high-carbon infrastructure lock-in. More important is the political will to alter the marketplace and incentivize this switch, for example, through a stable and strong carbon price. With the right incentives, fuel switching in the power sector could rapidly achieve on the order of 1 GtCO2 saving per year worldwide (3% of global emissions), buying precious time to slow the growth in cumulative carbon emissions.

  12. Electrically induced phase transition in GeSbTe alloys

    Energy Technology Data Exchange (ETDEWEB)

    Bruns, Gunnar; Schlockermann, Carl; Woda, Michael; Wuttig, Matthias [I. Physikalisches Institut Ia, RWTH Aachen, 52056 Aachen (Germany)

    2008-07-01

    While phase change materials have already successfully been applied in rewriteable optical data storage, they are now also promising to form the basis for novel non-volatile electrical data storage devices. To understand the physical concepts of these so-called Phase Change Random Access Memory (PCRAM) it is mandatory to gain a deeper insight into the switching process between the highly resistive amorphous and the lowly resistive crystalline phase. The fast phase transitions between the amorphous and crystalline state of GeSbTe-based alloys has so far often been studied using pulsed laser irradiation. In this work an alternative approach is employed to investigate this transition. Electrical pulses are used to rapidly and reversibly switch between the two states. For these experiments a setup was built with a specially designed contacting circuit board to meet the requirements of electrical measurements on a nanosecond timescale. The influence of the pulse parameters on the change of device resistance was determined for different initial states. Furthermore the high time resolution of 0.4 ns allows investigation of transient electrical effects like the so-called threshold switching first described by Ovshinsky in the late 1960s.

  13. Electrically induced phase transition in GeSbTe alloys

    International Nuclear Information System (INIS)

    Bruns, Gunnar; Schlockermann, Carl; Woda, Michael; Wuttig, Matthias

    2008-01-01

    While phase change materials have already successfully been applied in rewriteable optical data storage, they are now also promising to form the basis for novel non-volatile electrical data storage devices. To understand the physical concepts of these so-called Phase Change Random Access Memory (PCRAM) it is mandatory to gain a deeper insight into the switching process between the highly resistive amorphous and the lowly resistive crystalline phase. The fast phase transitions between the amorphous and crystalline state of GeSbTe-based alloys has so far often been studied using pulsed laser irradiation. In this work an alternative approach is employed to investigate this transition. Electrical pulses are used to rapidly and reversibly switch between the two states. For these experiments a setup was built with a specially designed contacting circuit board to meet the requirements of electrical measurements on a nanosecond timescale. The influence of the pulse parameters on the change of device resistance was determined for different initial states. Furthermore the high time resolution of 0.4 ns allows investigation of transient electrical effects like the so-called threshold switching first described by Ovshinsky in the late 1960s

  14. AIR ATMOSPHERIC-PRESSURE DISCHARGERS FOR OPERATION IN HIGH-FREQUENCY SWITCHING MODE.

    Directory of Open Access Journals (Sweden)

    L.S. Yevdoshenko

    2013-10-01

    Full Text Available Operation of two designs of compact multigap dischargers has been investigated in a high-frequency switching mode. It is experimentally revealed that the rational length of single discharge gaps in the designs is 0.3 mm, and the maximum switching frequency is 27000 discharges per second under long-term stable operation of the dischargers. It is shown that in pulsed corona discharge reactors, the pulse front sharpening results in increasing the operating electric field strength by 1.3 – 1.8 times.

  15. Expert system in power distribution lines switching; Sistema especialista em manobras de redes de distribuicao de energia eletrica

    Energy Technology Data Exchange (ETDEWEB)

    Cavellucci, Celso

    1989-07-01

    This work proposes an expert system integrated to procedures of numerical computation, denominated RD and projected to suggest alternatives of switching plans in the isolation and re-establishment of power distribution lines. The switching plans are based on the specialist's knowledge (network operator) and in evaluations of the electric conditions of the switching. Specialist's knowledge is represented in the form of triples (context, attribute, value) and production rules, that are evaluated conveniently by the machine of inference of the RD system. The electric power distribution is represented by a graph model, where the knots are load blocks and the arcs are key of the system. The evaluation of the electric requirements (voltage drop and physical capacity of the components of the power distribution lines) it is obtained through a maneuver simulator (numeric computation). The maneuver simulator bases on the Method of the Moments for the calculation of the voltage drop. With base in these ideas a prototype of the RD system was developed.

  16. Expert system in power distribution lines switching; Sistema especialista em manobras de redes de distribuicao de energia eletrica

    Energy Technology Data Exchange (ETDEWEB)

    Cavellucci, Celso

    1989-07-01

    This work proposes an expert system integrated to procedures of numerical computation, denominated RD and projected to suggest alternatives of switching plans in the isolation and re-establishment of power distribution lines. The switching plans are based on the specialist's knowledge (network operator) and in evaluations of the electric conditions of the switching. Specialist's knowledge is represented in the form of triples (context, attribute, value) and production rules, that are evaluated conveniently by the machine of inference of the RD system. The electric power distribution is represented by a graph model, where the knots are load blocks and the arcs are key of the system. The evaluation of the electric requirements (voltage drop and physical capacity of the components of the power distribution lines) it is obtained through a maneuver simulator (numeric computation). The maneuver simulator bases on the Method of the Moments for the calculation of the voltage drop. With base in these ideas a prototype of the RD system was developed.

  17. Modernization of the Electric Power Systems (transformers, rods and switches) in the Laguna Verde Nuclear Power Plant (Mexico); Modernizacion de los Sistemas Electricos de Potencia (Transformadores de Principales, Interruptor de Generacion, Barras de Fase Aislada) de la Central Nuclear de Laguna Verde (Mexico)

    Energy Technology Data Exchange (ETDEWEB)

    Gonzalez Solarzano, J. J.; Gabaldon Martin, M. A.; Pallisa Nunez, J.; Florez Ordeonez, A.; Fernandez Corbeira, A.; Prieto Diez, I.

    2010-07-01

    Description of the changes made in the Electric Power Systems as a part of the power increase project in the Laguna Verde Nuclear Power Plant (Mexico). The main electrical changes to make, besides the turbo group, are the main generation transformers, the isolated rods and the generation switch.

  18. Control system of mutually coupled switched reluctance motor drive of mining machines in generator mode

    Science.gov (United States)

    Ivanov, A. S.; Kalanchin, I. Yu; Pugacheva, E. E.

    2017-09-01

    One of the first electric motors, based on the use of electromagnets, was a reluctance motor in the XIX century. Due to the complexities in the implementation of control system the development of switched reluctance electric machines was repeatedly initiated only in 1960 thanks to the development of computers and power electronic devices. The main feature of these machines is the capacity to work both in engine mode and in generator mode. Thanks to a simple and reliable design in which there is no winding of the rotor, commutator, permanent magnets, a reactive gate-inductor electric drive operating in the engine mode is actively being introduced into various areas such as car industry, production of household appliances, wind power engineering, as well as responsible production processes in the oil and mining industries. However, the existing shortcomings of switched reluctance electric machines, such as nonlinear pulsations of electromagnetic moment, the presence of three or four phase supply system and sensor of rotor position prevent wide distribution of this kind of electric machines.

  19. Moessbauer Study of Discoloration of Synthetic Resin Covered Electric Switches

    International Nuclear Information System (INIS)

    Kuzmann, E.; Muzsay, I.; Homonnay, Z.; Vertes, A.

    2002-01-01

    57 Fe Moessbauer spectroscopy and X-ray diffractometry were used to investigate brown discoloration and sediments formed on the surface of synthetic resin product covered electronic switches. The Moessbauer measurement revealed that alloyed steels and iron-containing corrosion products are associated with the discolored layers. Iron, and iron corrosion products were shown by both MS and XRD in the sediments formed eventually during the finishing of the synthetic resin products after machining and washing with water solution.

  20. Tuning the resistive switching properties of TiO2-x films

    Science.gov (United States)

    Ghenzi, N.; Rozenberg, M. J.; Llopis, R.; Levy, P.; Hueso, L. E.; Stoliar, P.

    2015-03-01

    We study the electrical characteristics of TiO2-x-based resistive switching devices fabricated with different oxygen/argon flow ratio during the oxide thin film sputtering deposition. Upon minute changes in this fabrication parameter, three qualitatively different device characteristics were accessed in the same system, namely, standard bipolar resistive switching, electroforming-free devices, and devices with multi-step breakdown. We propose that small variations in the oxygen/ argon flow ratio result in relevant changes of the oxygen vacancy concentration, which is the key parameter determining the resistive switching behavior. The coexistence of percolative or non-percolative conductive filaments is also discussed. Finally, the hypothesis is verified by means of the temperature dependence of the devices in low resistance state.

  1. Electrical motor/generator drive apparatus and method

    Science.gov (United States)

    Su, Gui Jia

    2013-02-12

    The present disclosure includes electrical motor/generator drive systems and methods that significantly reduce inverter direct-current (DC) bus ripple currents and thus the volume and cost of a capacitor. The drive methodology is based on a segmented drive system that does not add switches or passive components but involves reconfiguring inverter switches and motor stator winding connections in a way that allows the formation of multiple, independent drive units and the use of simple alternated switching and optimized Pulse Width Modulation (PWM) schemes to eliminate or significantly reduce the capacitor ripple current.

  2. Nonvolatile Resistive Switching Memory Utilizing Cobalt Embedded in Gelatin

    Directory of Open Access Journals (Sweden)

    Cheng-Jung Lee

    2017-12-01

    Full Text Available This study investigates the preparation and electrical properties of Al/cobalt-embedded gelatin (CoG/ indium tin oxide (ITO resistive switching memories. Co. elements can be uniformly distributed in gelatin without a conventional dispersion procedure, as confirmed through energy dispersive X-ray analyzer and X-ray photoelectron spectroscopy observations. With an appropriate Co. concentration, Co. ions can assist the formation of an interfacial AlOx layer and improve the memory properties. High ON/OFF ratio, good retention capability, and good endurance switching cycles are demonstrated with 1 M Co. concentration, in contrast to 0.5 M and 2 M memory devices. This result can be attributed to the suitable thickness of the interfacial AlOx layer, which acts as an oxygen reservoir and stores and releases oxygen during switching. The Co. element in a solution-processed gelatin matrix has high potential for bio-electronic applications.

  3. Fast fringe-field switching of a liquid crystal cell by two-dimensional confinement with virtual walls

    OpenAIRE

    Choi, Tae-Hoon; Oh, Seung-Won; Park, Young-Jin; Choi, Yeongyu; Yoon, Tae-Hoon

    2016-01-01

    We report a simple method for reducing the response time of a fringe-field switching liquid crystal cell by using two-dimensional confinement of the liquid crystals. Through both numerical calculations and experiments, we show that the switching speed can be increased by several fold in a fringe-field switching cell by simply using a rubbing angle of zero, which causes virtual walls to be built when an electric field is applied between the interdigitated electrodes and the common electrode, w...

  4. Alternative Fuels Data Center: Plug-In Hybrid Electric Vehicles

    Science.gov (United States)

    . Fueling and Driving Options Plug-in hybrid electric vehicle batteries can be charged by an outside sized hybrid electric vehicle. If the vehicle is driven a shorter distance than its all-electric range drives the wheels almost all of the time, but the vehicle can switch to work like a parallel hybrid at

  5. Analysis of aceismatic properties of switch boards

    International Nuclear Information System (INIS)

    Tabuchi, Yoji; Nishikawa, Atsushi

    1986-01-01

    Recently, in order to limit the disaster at the time of earthquakes to the minimum, the aseismatic properties of electric facilities have been regarded as important. By the development and spread of CAE simulation and experimental modal analysis, aseismatic analysis has become feasible also in design section. Taking an example of the switch boards of rigid construction, which have been used mainly for nuclear power plants, the analysis of the aseismatic properties is explained. In the switch boards of rigid construction, the probability of causing resonance behavior due to earthquakes is decreased by making the structure rigid, thus the aseismatic properties are heightened. In the switch boards of rigid construction, the primary natural frequency is heightened usually to above 20 Hz considering earthquake movement and the response of buildings (in the range from 0.5 to 10 Hz). Since the switch boards of rigid construction can be treated as a rigid body in the examination of structural strength, generally static analysis is carried out. The dimensions and weight tend to be large for increasing the rigidity. In most cases, standard equipment can be adopted if the fixing is made strong. The modal analysis of the natural vibration, static stress analysis and time history response analysis were carried out by finite element method. Also the vibration test on a large vibration table was made. The results are reported. (Kako, I.)

  6. Electrical breakdown of water in microgaps

    International Nuclear Information System (INIS)

    Schoenbach, Karl; Kolb, Juergen; Xiao Shu; Katsuki, Sunao; Minamitani, Yasushi; Joshi, Ravindra

    2008-01-01

    Experimental and modeling studies on electrical breakdown in water in submillimeter gaps between pin and plane electrodes have been performed. Prebreakdown, breakdown and recovery of the water gaps were studied experimentally by using optical and electrical diagnostics with a temporal resolution on the order of one nanosecond. By using Mach-Zehnder interferometry, the electric field distribution in the prebreakdown phase was determined by means of the Kerr effect. Electric fields values in excess of the computed electric fields, which reach >4 MV cm -1 for applied electrical pulses of 20 ns duration, were recorded at the tip of the pin electrode, an effect which can be explained by a reduced permittivity of water at high electric fields. Breakdown of the gaps, streamer-to-arc transition, was recorded by means of high-speed electrical diagnostics, and through high-speed photography. It was shown, through simulations, that breakdown is initiated by field emission at the interface of preexisting microbubbles. Impact ionization within the micro-bubble's gas then contributes to plasma development. Experiments using pulse-probe methods and Schlieren diagnostics allowed us to follow the development of the disturbance caused by the breakdown over a time of more than milliseconds and to determine the recovery time of a water switch. In order to trigger water switches a trigger electrode with a triple point has been utilized. The results of this research have found application in the construction of compact pulse power generators for bioelectric applications.

  7. Switch: a planning tool for power systems with large shares of intermittent renewable energy.

    Science.gov (United States)

    Fripp, Matthias

    2012-06-05

    Wind and solar power are highly variable, so it is it unclear how large a role they can play in future power systems. This work introduces a new open-source electricity planning model--Switch--that identifies the least-cost strategy for using renewable and conventional generators and transmission in a large power system over a multidecade period. Switch includes an unprecedented amount of spatial and temporal detail, making it possible to address a new type of question about the optimal design and operation of power systems with large amounts of renewable power. A case study of California for 2012-2027 finds that there is no maximum possible penetration of wind and solar power--these resources could potentially be used to reduce emissions 90% or more below 1990 levels without reducing reliability or severely raising the cost of electricity. This work also finds that policies that encourage customers to shift electricity demand to times when renewable power is most abundant (e.g., well-timed charging of electric vehicles) could make it possible to achieve radical emission reductions at moderate costs.

  8. A pelvic motion driven electrical stimulator for drop-foot treatment.

    Science.gov (United States)

    Chen, Shih-Wei; Chen, Shih-Ching; Chen, Chiun-Fan; Lai, Jin-Shin; Kuo, Te-Son

    2009-01-01

    Foot switches operating with force sensitive resistors placed in the shoe sole were considered as an effective way for driving FES assisted walking systems in gait restoration. However, the reliability and durability of the foot switches run down after a certain number of steps. As an alternative for foot switches, a simple, portable, and easy to handle motion driven electrical stimulator (ES) is provided for drop foot treatment. The device is equipped with a single tri-axis accelerometer worn on the pelvis, a commercial dual channel electrical stimulator, and a controller unit. By monitoring the pelvic rotation and acceleration during a walking cycle, the events including heel strike and toe off of each step is thereby predicted by a post-processing neural network model.

  9. Response switching and self-efficacy in Peer Instruction classrooms

    Science.gov (United States)

    Miller, Kelly; Schell, Julie; Ho, Andrew; Lukoff, Brian; Mazur, Eric

    2015-06-01

    Peer Instruction, a well-known student-centered teaching method, engages students during class through structured, frequent questioning and is often facilitated by classroom response systems. The central feature of any Peer Instruction class is a conceptual question designed to help resolve student misconceptions about subject matter. We provide students two opportunities to answer each question—once after a round of individual reflection and then again after a discussion round with a peer. The second round provides students the choice to "switch" their original response to a different answer. The percentage of right answers typically increases after peer discussion: most students who answer incorrectly in the individual round switch to the correct answer after the peer discussion. However, for any given question there are also students who switch their initially right answer to a wrong answer and students who switch their initially wrong answer to a different wrong answer. In this study, we analyze response switching over one semester of an introductory electricity and magnetism course taught using Peer Instruction at Harvard University. Two key features emerge from our analysis: First, response switching correlates with academic self-efficacy. Students with low self-efficacy switch their responses more than students with high self-efficacy. Second, switching also correlates with the difficulty of the question; students switch to incorrect responses more often when the question is difficult. These findings indicate that instructors may need to provide greater support for difficult questions, such as supplying cues during lectures, increasing times for discussions, or ensuring effective pairing (such as having a student with one right answer in the pair). Additionally, the connection between response switching and self-efficacy motivates interventions to increase student self-efficacy at the beginning of the semester by helping students develop early mastery or

  10. Energy reversible switching from amorphous metal based nanoelectromechanical switch

    KAUST Repository

    Mayet, Abdulilah M.; Smith, Casey; Hussain, Muhammad Mustafa

    2013-01-01

    We report observation of energy reversible switching from amorphous metal based nanoelectromechanical (NEM) switch. For ultra-low power electronics, NEM switches can be used as a complementary switching element in many nanoelectronic system applications. Its inherent zero power consumption because of mechanical detachment is an attractive feature. However, its operating voltage needs to be in the realm of 1 volt or lower. Appropriate design and lower Young's modulus can contribute achieving lower operating voltage. Therefore, we have developed amorphous metal with low Young's modulus and in this paper reporting the energy reversible switching from a laterally actuated double electrode NEM switch. © 2013 IEEE.

  11. Energy reversible switching from amorphous metal based nanoelectromechanical switch

    KAUST Repository

    Mayet, Abdulilah M.

    2013-08-01

    We report observation of energy reversible switching from amorphous metal based nanoelectromechanical (NEM) switch. For ultra-low power electronics, NEM switches can be used as a complementary switching element in many nanoelectronic system applications. Its inherent zero power consumption because of mechanical detachment is an attractive feature. However, its operating voltage needs to be in the realm of 1 volt or lower. Appropriate design and lower Young\\'s modulus can contribute achieving lower operating voltage. Therefore, we have developed amorphous metal with low Young\\'s modulus and in this paper reporting the energy reversible switching from a laterally actuated double electrode NEM switch. © 2013 IEEE.

  12. Machine learning based switching model for electricity load forecasting

    Energy Technology Data Exchange (ETDEWEB)

    Fan, Shu; Lee, Wei-Jen [Energy Systems Research Center, The University of Texas at Arlington, 416 S. College Street, Arlington, TX 76019 (United States); Chen, Luonan [Department of Electronics, Information and Communication Engineering, Osaka Sangyo University, 3-1-1 Nakagaito, Daito, Osaka 574-0013 (Japan)

    2008-06-15

    In deregulated power markets, forecasting electricity loads is one of the most essential tasks for system planning, operation and decision making. Based on an integration of two machine learning techniques: Bayesian clustering by dynamics (BCD) and support vector regression (SVR), this paper proposes a novel forecasting model for day ahead electricity load forecasting. The proposed model adopts an integrated architecture to handle the non-stationarity of time series. Firstly, a BCD classifier is applied to cluster the input data set into several subsets by the dynamics of the time series in an unsupervised manner. Then, groups of SVRs are used to fit the training data of each subset in a supervised way. The effectiveness of the proposed model is demonstrated with actual data taken from the New York ISO and the Western Farmers Electric Cooperative in Oklahoma. (author)

  13. Machine learning based switching model for electricity load forecasting

    Energy Technology Data Exchange (ETDEWEB)

    Fan Shu [Energy Systems Research Center, University of Texas at Arlington, 416 S. College Street, Arlington, TX 76019 (United States); Chen Luonan [Department of Electronics, Information and Communication Engineering, Osaka Sangyo University, 3-1-1 Nakagaito, Daito, Osaka 574-0013 (Japan); Lee, Weijen [Energy Systems Research Center, University of Texas at Arlington, 416 S. College Street, Arlington, TX 76019 (United States)], E-mail: wlee@uta.edu

    2008-06-15

    In deregulated power markets, forecasting electricity loads is one of the most essential tasks for system planning, operation and decision making. Based on an integration of two machine learning techniques: Bayesian clustering by dynamics (BCD) and support vector regression (SVR), this paper proposes a novel forecasting model for day ahead electricity load forecasting. The proposed model adopts an integrated architecture to handle the non-stationarity of time series. Firstly, a BCD classifier is applied to cluster the input data set into several subsets by the dynamics of the time series in an unsupervised manner. Then, groups of SVRs are used to fit the training data of each subset in a supervised way. The effectiveness of the proposed model is demonstrated with actual data taken from the New York ISO and the Western Farmers Electric Cooperative in Oklahoma.

  14. Machine learning based switching model for electricity load forecasting

    International Nuclear Information System (INIS)

    Fan Shu; Chen Luonan; Lee, Weijen

    2008-01-01

    In deregulated power markets, forecasting electricity loads is one of the most essential tasks for system planning, operation and decision making. Based on an integration of two machine learning techniques: Bayesian clustering by dynamics (BCD) and support vector regression (SVR), this paper proposes a novel forecasting model for day ahead electricity load forecasting. The proposed model adopts an integrated architecture to handle the non-stationarity of time series. Firstly, a BCD classifier is applied to cluster the input data set into several subsets by the dynamics of the time series in an unsupervised manner. Then, groups of SVRs are used to fit the training data of each subset in a supervised way. The effectiveness of the proposed model is demonstrated with actual data taken from the New York ISO and the Western Farmers Electric Cooperative in Oklahoma

  15. Power for the future : towards a sustainable electricity system for Ontario

    International Nuclear Information System (INIS)

    Winfield, M.S.; Horne, M.; McClenaghan, T.; Peters, R.

    2004-05-01

    Ontario's electricity system has undergone major changes since 1998, when the Hydro-Electric Power Commission was divided into four separate entities, Ontario Power Generation, Hydro One, the Ontario Electricity Financial Corporation, and the Electrical Safety Authority. In addition, retail and wholesale electricity markets were introduced in 2002 under the supervision of the Ontario Energy Board. The removal from service of several nuclear generating facilities in the province led to greater reliance on coal-fired generation to meet energy demands. In 2003, the newly elected provincial government made a commitment to phase out coal-fired plants by 2007 for environmental reasons. It is estimated that all the the existing nuclear facilities will reach their projected operational lifetimes by 2018. Given the province's growing electricity demand, several options have been proposed as to how future energy needs could be met. The options range from investment into low-impact renewable energy sources such as small-scale hydro, solar, biomass and wind, to the construction of new nuclear generating facilities. The Pembina Institute and the Canadian Environmental Law Association examined the following four key issues regarding Ontario's future direction in electricity generation, transmission and distribution: (1) by how much can electricity demand be reduced through the adoption of energy efficient technologies, fuel switching, cogeneration and demand response measures, (2) how much electricity supply can be obtained from low-impact renewable energy sources, (3) how should the grid demand be met once the electricity system has maximized the technically and economically feasible contributions from energy efficiency, fuel switching, cogeneration, response management measures (RMM) and renewable energy sources, and (4) what public policies should the province adopt to maximize energy efficiency, fuel switching, cogeneration, RMM and renewable energy sources. The Canadian

  16. Investigations and Simulations of All optical Switches in linear state Based on Photonic Crystal Directional Coupler

    Directory of Open Access Journals (Sweden)

    S. Maktoobi

    2014-10-01

    Full Text Available Switching is a principle process in digital computers and signal processing systems. The growth of optical signal processing systems, draws particular attention to design of ultra-fast optical switches. In this paper, All Optical Switches in linear state Based On photonic crystal Directional coupler is analyzed and simulated. Among different methods, the finite difference time domain method (FDTD is a preferable method and is used. We have studied the application of photonic crystal lattices, the physics of optical switching and photonic crystal Directional coupler. In this paper, Electric field intensity and the power output that are two factors to improve the switching performance and the device efficiency are investigated and simulated. All simulations are performed by COMSOL software.

  17. Memory resistive switching in CeO{sub 2}-based film microstructures patterned by a focused ion beam

    Energy Technology Data Exchange (ETDEWEB)

    Velichko, A. [Petrozavodsk State University, 185910 Petrozavodsk (Russian Federation); Boriskov, P., E-mail: boriskov@psu.karelia.ru [Petrozavodsk State University, 185910 Petrozavodsk (Russian Federation); Savenko, A. [Petrozavodsk State University, 185910 Petrozavodsk (Russian Federation); Grishin, A.; Khartsev, S.; Yar, M. Ahmed; Muhammed, M. [Royal Institute of Technology, SE-164 40 Stockholm, Kista (Sweden)

    2014-04-01

    Heteroepitaxial CeO{sub 2} (80 nm)/La{sub 0.5}Sr{sub 0.5}CoO{sub 3} (500 nm) film structure has been pulsed laser deposited on a sapphire substrate. The Ag/CeO{sub 2} microjunctions patterned by a focused ion beam on a La{sub 0.5}Sr{sub 0.5}CoO{sub 3} film exhibit reproducible reversible switching between a high resistance state (OFF) with insulating properties and a semiconducting or metallic low resistance state (ON) with resistance ratios up to 10{sup 4}. The influence of micro-scaling and defects formed at the cell boundaries during etching on its electrical characteristics has been analyzed. The appearance of a switching channel at the moment of the electrical forming, responsible for the memory effect, has been proved, along with a mechanism of a self-healing electrical breakdown. - Highlights: • Ag/CeO{sub 2}/La{sub 0.5}Sr{sub 0.5}CoO{sub 3} microstructures were patterned by a focused ion beam. • Reproducible memory resistive switching was discovered in Ag/CeO{sub 2} microjunctions. • Micro-scaling affects electrical characteristics of Ag/CeO{sub 2} microjunctions. • A mechanism of a self-healing breakdown was discovered.

  18. Development and application of an empirical formula for the high temperature behavior of ferroelectric ceramics switched by electric field at room temperature

    Directory of Open Access Journals (Sweden)

    Dae Won Ji

    2017-05-01

    Full Text Available The strain changes during temperature rise of a poled lead titanate zirconate rectangular parallelepiped switched by electric field at room temperature are obtained by integrating thermal expansion coefficients that are measured using an invar-specimen. By estimating and analyzing pyroelectric and thermal expansion coefficients, first-order differential equations are constructed for polarization and strain changes during temperature increase. The solutions to the differential equations are found and used to calculate the high temperature behavior of the materials. It is shown that the predictions are well compared with measured responses. Finally, the developed formulae are applied to calculate strain butterfly loops from a polarization hysteresis loop at a high temperature.

  19. Azo biphenyl polyurethane: Preparation, characterization and application for optical waveguide switch

    Science.gov (United States)

    Jiang, Yan; Da, Zulin; Qiu, Fengxian; Yang, Dongya; Guan, Yijun; Cao, Guorong

    2018-01-01

    Azo waveguide polymers are of particular interest in the design of materials for applications in optical switch. The aim of this contribution was the synthesis and thermo-optic waveguide switch properties of azo biphenyl polyurethanes. A series of monomers and azo biphenyl polyurethanes (Azo BPU1 and Azo BPU2) were synthesized and characterized by FT-IR, UV-Vis spectroscopy and 1H NMR. The physical and mechanical properties of thin polymer films were measured. The refractive index and thermo-optic coefficient (dn/dT) of polymer films were investigated for TE (transversal electric) polarizations by ATR technique. The transmission loss of film was measured using the Charge Coupled Device digital imaging devices. The results showed the Azo BPU2 containing chiral azobenzene chromophore had higher dn/dT and lower transmission loss. Subsequently, a 1 × 2 Y-branch and 2 × 2 Mach-Zehnder optical switches based on the prepared polymers were designed and simulated. The results showed that the power consumption of all switches was less than 1.0 mW. Compared with 1 × 2 Y-branch optical switch, the 2 × 2 Mach-Zehnder optical switches based on the same polymer have the faster response time, which were about only 1.2 and 2.0 ms, respectively.

  20. Monolithic, High-Speed Fiber-Optic Switching Array for Lidar

    Science.gov (United States)

    Suckow, Will; Roberts, Tony; Switzer, Gregg; Terwilliger, Chelle

    2011-01-01

    Current fiber switch technologies use mechanical means to redirect light beams, resulting in slow switch time, as well as poor reliability due to moving parts wearing out quickly at high speeds. A non-mechanical ability to switch laser output into one of multiple fibers within a fiber array can provide significant power, weight, and costs savings to an all-fiber system. This invention uses an array of crystals that act as miniature prisms to redirect light as an electric voltage changes the prism s properties. At the heart of the electro-optic fiber-optic switch is an electro- optic crystal patterned with tiny prisms that can deflect the beam from the input fiber into any one of the receiving fibers arranged in a linear array when a voltage is applied across the crystal. Prism boundaries are defined by a net dipole moment in the crystal lattice that has been poled opposite to the surrounding lattice fabricated using patterned, removable microelectrodes. When a voltage is applied across the crystal, the resulting electric field changes the index of refraction within the prism boundaries relative to the surrounding substrate, causing light to deflect slightly according to Snell s Law. There are several materials that can host the necessary monolithic poled pattern (including, but not limited to, SLT, KTP, LiNbO3, and Mg:LiNbO3). Be cause this is a solid-state system without moving parts, it is very fast, and does not wear down easily. This invention is applicable to all fiber networks, as well as industries that use such networks. The unit comes in a compact package, can handle both low and high voltages, and has a high reliability (100,000 hours without maintenance).

  1. Binary and ternary gas mixtures for use in glow discharge closing switches

    Science.gov (United States)

    Hunter, S.R.; Christophorou, L.G.

    1988-04-27

    Highly efficient binary and ternary gas mixtures for use in diffuse glow discharge closing switches are disclosed. The binary mixtures are combinations of helium or neon and selected perfluorides. The ternary mixtures are combinations of helium, neon, or argon, a selected perfluoride, and a small amount of gas that exhibits enhanced ionization characteristics. These mixtures are shown to be the optimum choices for use in diffuse glow discharge closing switches by virtue if the combines physio-electric properties of the mixture components. 9 figs.

  2. Electrical transport in crystalline phase change materials

    Energy Technology Data Exchange (ETDEWEB)

    Woda, Michael

    2012-01-06

    In this thesis, the electrical transport properties of crystalline phase change materials are discussed. Phase change materials (PCM) are a special class of semiconducting and metallic thin film alloys, typically with a high amount of the group five element antimony or the group six element tellurium, such as Ge{sub 2}Sb{sub 2}Te{sub 5}. The unique property portfolio of this material class makes it suitable for memory applications. PCMs reveal fast switching between two stable room-temperature phases (amorphous and crystalline) realized by optical laser or electrical current pulses in memory devices. Additionally, a pronounced property contrast in form of optical reflectivity and electrical conductivity between the amorphous and crystalline phase is the characteristic fingerprint of PCMs. The emerging electrical solid state memory PCRAM is a very promising candidate to replace Flash memory in the near future or to even become a universal memory, which is non-volatile and shows the speed and cyclability of DRAM. One of the main technological challenges is the switching process into the amorphous state, which is the most power demanding step. In order to reduce the switching power, the crystalline resistivity needs to be increased at a given voltage. Thus understanding and tayloring of this property is mandatory. In this work, first the technological relevance, i.e. optical and electrical memory concepts based on PCMs are introduced. Subsequently a description of the physical properties of PCMs in four categories is given. Namely, structure, kinetics, optical properties and electrical properties are discussed. Then important recent developments such as the identification of resonant bonding in crystalline PCMs and a property predicting coordination scheme are briefly reviewed. The following chapter deals with the theoretical background of electrical transport, while the next chapter introduces the experimental techniques: Sputtering, XRR, XRD, DSC, thermal annealing

  3. Logic computation in phase change materials by threshold and memory switching.

    Science.gov (United States)

    Cassinerio, M; Ciocchini, N; Ielmini, D

    2013-11-06

    Memristors, namely hysteretic devices capable of changing their resistance in response to applied electrical stimuli, may provide new opportunities for future memory and computation, thanks to their scalable size, low switching energy and nonvolatile nature. We have developed a functionally complete set of logic functions including NOR, NAND and NOT gates, each utilizing a single phase-change memristor (PCM) where resistance switching is due to the phase transformation of an active chalcogenide material. The logic operations are enabled by the high functionality of nanoscale phase change, featuring voltage comparison, additive crystallization and pulse-induced amorphization. The nonvolatile nature of memristive states provides the basis for developing reconfigurable hybrid logic/memory circuits featuring low-power and high-speed switching. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  4. The loyalty of industrial clients of gas and electricity: the value rol and switching barriers; La fidelizacion de clientes industriales de gas natural y electricidad: El papel del valor recibido y las barreras al cambio

    Energy Technology Data Exchange (ETDEWEB)

    Garcia Acebron, C.; Vazquez Castelles, R.; Iglesias Arguelles, V.

    2007-07-01

    This paper deals with perceived value and loyalty in a B2 B environment taking account switching barriers. The Spanish energy market has been newly liberalized and many companies offer supply services of natural gas and electricity. The research examines the casual relations between perceived value and two dimensions of loyalty: repurchase intentions and price tolerance. Although our results indicate that suppliers achieve better repurchase intentions by providing value to their customers, they also show that this is insufficient when the aim is to increase customer price tolerance. In this case another moderating variable must be included: the switching barriers. (Author)

  5. The nanocoherer: an electrically and mechanically resettable resistive switching device based on gold clusters assembled on paper

    Science.gov (United States)

    Minnai, Chloé; Mirigliano, Matteo; Brown, Simon A.; Milani, Paolo

    2018-03-01

    We report the realization of a resettable resistive switching device based on a nanostructured film fabricated by supersonic cluster beam deposition of gold clusters on plain paper substrates. Through the application of suitable voltage ramps, we obtain, in the same device, either a complex pattern of resistive switchings, or reproducible and stable switchings between low resistance and high resistance states, with an amplitude up to five orders of magnitude. Our device retains a state of internal resistance following the history of the applied voltage similar to that reported for memristors. The two different switching regimes in the same device are both stable, the transition between them is reversible, and it can be controlled by applying voltage ramps or by mechanical deformation of the substrate. The device behavior can be related to the formation, growth and breaking of junctions between the loosely aggregated gold clusters forming the nanostructured films. The fact that our cluster-assembled device is mechanically resettable suggests that it can be considered as the analog of the coherer: a switching device based on metallic powders used for the first radio communication system.

  6. Tunable optical switching in the near-infrared spectral regime by employing plasmonic nanoantennas containing phase change materials.

    Science.gov (United States)

    Savaliya, Priten B; Thomas, Arun; Dua, Rishi; Dhawan, Anuj

    2017-10-02

    We propose the design of switchable plasmonic nanoantennas (SPNs) that can be employed for optical switching in the near-infrared regime. The proposed SPNs consist of nanoantenna structures made up of a plasmonic metal (gold) such that these nanoantennas are filled with a switchable material (vanadium dioxide). We compare the results of these SPNs with inverted SPN structures that consist of gold nanoantenna structures surrounded by a layer of vanadium dioxide (VO 2 ) on their outer surface. These nanoantennas demonstrate switching of electric-field intensity enhancement (EFIE) between two states (On and Off states), which can be induced thermally, optically or electrically. The On and Off states of the nanoantennas correspond to the metallic and semiconductor states, respectively of the VO 2 film inside or around the nanoantennas, as the VO 2 film exhibits phase transition from its semiconductor state to the metallic state upon application of thermal, optical, or electrical energy. We employ finite-difference time-domain (FDTD) simulations to demonstrate switching in the EFIE for four different SPN geometries - nanorod-dipole, bowtie, planar trapezoidal toothed log-periodic, and rod-disk - and compare their near-field distributions for the On and Off states of the SPNs. We also demonstrate that the resonance wavelength of the EFIE spectra gets substantially modified when these SPNs switch between the two states.

  7. Resistance switching in epitaxial SrCoOx thin films

    Science.gov (United States)

    Tambunan, Octolia T.; Parwanta, Kadek J.; Acharya, Susant K.; Lee, Bo Wha; Jung, Chang Uk; Kim, Yeon Soo; Park, Bae Ho; Jeong, Huiseong; Park, Ji-Yong; Cho, Myung Rae; Park, Yun Daniel; Choi, Woo Seok; Kim, Dong-Wook; Jin, Hyunwoo; Lee, Suyoun; Song, Seul Ji; Kang, Sung-Jin; Kim, Miyoung; Hwang, Cheol Seong

    2014-08-01

    We observed bipolar switching behavior from an epitaxial strontium cobaltite film grown on a SrTiO3 (001) substrate. The crystal structure of strontium cobaltite has been known to undergo topotactic phase transformation between two distinct phases: insulating brownmillerite (SrCoO2.5) and conducting perovskite (SrCoO3-δ) depending on the oxygen content. The current-voltage characteristics of the strontium cobaltite film showed that it could have a reversible insulator-to-metal transition triggered by electrical bias voltage. We propose that the resistance switching in the SrCoOx thin film could be related to the topotactic phase transformation and the peculiar structure of SrCoO2.5.

  8. Resistance switching in epitaxial SrCoOx thin films

    International Nuclear Information System (INIS)

    Tambunan, Octolia T.; Parwanta, Kadek J.; Acharya, Susant K.; Lee, Bo Wha; Jung, Chang Uk; Kim, Yeon Soo; Park, Bae Ho; Jeong, Huiseong; Park, Ji-Yong; Cho, Myung Rae; Park, Yun Daniel; Choi, Woo Seok; Kim, Dong-Wook; Jin, Hyunwoo; Lee, Suyoun; Song, Seul Ji; Kang, Sung-Jin; Kim, Miyoung; Hwang, Cheol Seong

    2014-01-01

    We observed bipolar switching behavior from an epitaxial strontium cobaltite film grown on a SrTiO 3 (001) substrate. The crystal structure of strontium cobaltite has been known to undergo topotactic phase transformation between two distinct phases: insulating brownmillerite (SrCoO 2.5 ) and conducting perovskite (SrCoO 3−δ ) depending on the oxygen content. The current–voltage characteristics of the strontium cobaltite film showed that it could have a reversible insulator-to-metal transition triggered by electrical bias voltage. We propose that the resistance switching in the SrCoO x thin film could be related to the topotactic phase transformation and the peculiar structure of SrCoO 2.5

  9. Favourability towards electric utilities jumps 10 per cent in 1997

    International Nuclear Information System (INIS)

    Anon.

    1997-01-01

    A recent survey of public opinion has shown that 85 per cent of the public view their electric utility company favourably. This represents a 10 per cent increase over last year. A survey of 4,090 Canadians was conducted which looked at the perceptions of the value of electricity services compared to telephone, natural gas, banking, and home insurance services. The study showed that Canadian electric utility companies are viewed as positively as the telephone companies and almost as favourably as the banks. Some 71 per cent of respondents reported that the value they receive from their electric utility is excellent or good. Lower prices, better customer services and increased research into alternative power sources were among the benefits that Canadians perceive would result from a more competitive electricity sector. Some misgivings about deregulation included a belief that there would be less attention to environmental concerns and more outages. Four per cent of the respondents said they would 'definitely' switch to an alternative supplier of electricity, while 25 per cent said they would 'probably' switch to an alternative supplier of electricity. 2 tabs

  10. Pseudospark switches

    International Nuclear Information System (INIS)

    Billault, P.; Riege, H.; Gulik, M. van; Boggasch, E.; Frank, K.

    1987-01-01

    The pseudospark discharge is bound to a geometrical structure which is particularly well suited for switching high currents and voltages at high power levels. This type of discharge offers the potential for improvement in essentially all areas of switching operation: peak current and current density, current rise, stand-off voltage, reverse current capability, cathode life, and forward drop. The first pseudospark switch was built at CERN at 1981. Since then, the basic switching characteristics of pseudospark chambers have been studied in detail. The main feature of a pseudospark switch is the confinement of the discharge plasma to the device axis. The current transition to the hollow electrodes is spread over a rather large surface area. Another essential feature is the easy and precise triggering of the pseudospark switch from the interior of the hollow electrodes, relatively far from the main discharge gap. Nanosecond delay and jitter values can be achieved with trigger energies of less than 0.1 mJ, although cathode heating is not required. Pseudospark gaps may cover a wide range of high-voltage, high-current, and high-pulse-power switching at repetition rates of many kilohertz. This report reviews the basic researh on pseudospark switches which has been going on at CERN. So far, applications have been developed in the range of thyratron-like medium-power switches at typically 20 to 40 kV and 0.5 to 10 kA. High-current pseudospark switches have been built for a high-power 20 kJ pulse generator which is being used for long-term tests of plasma lenses developed for the future CERN Antiproton Collector (ACOL). The high-current switches have operated for several hundred thousand shots, with 20 to 50 ns jitter at 16 kV charging voltage and more than 100 kA peak current amplitude. (orig.)

  11. Synchronization Between Two Different Switched Chaotic Systems By Switching Control

    Directory of Open Access Journals (Sweden)

    Du Li Ming

    2016-01-01

    Full Text Available This paper is concerned with the synchronization problem of two different switched chaotic systems, considering the general case that the master-slave switched chaotic systems have uncertainties. Two basic problems are considered: one is projective synchronization of switched chaotic systems under arbitrary switching; the other is projective synchronization of switched chaotic systems by design of switching when synchronization cannot achieved by using any subsystems alone. For the two problems, common Lyapunov function method and multiple Lyapunov function method are used respectively, an adaptive control scheme has been presented, some sufficient synchronization conditions are attainted, and the switching signal is designed. Finally, the numerical simulation is provide to show the effectiveness of our method.

  12. Stability enhancement of an electrically tunable colloidal photonic crystal using modified electrodes with a large electrochemical potential window

    Energy Technology Data Exchange (ETDEWEB)

    Shim, HongShik [Samsung Advanced Institute of Technology, Yongin-Si, Gyeonggi-do (Korea, Republic of); Department of Chemistry, Seoul National University, Seoul (Korea, Republic of); Gyun Shin, Chang; Heo, Chul-Joon; Jeon, Seog-Jin; Jin, Haishun; Woo Kim, Jung; Jin, YongWan; Lee, SangYoon; Gyu Han, Moon, E-mail: moongyu.han@samsung.com, E-mail: jinklee@snu.ac.kr [Samsung Advanced Institute of Technology, Yongin-Si, Gyeonggi-do (Korea, Republic of); Lim, Joohyun; Lee, Jin-Kyu, E-mail: moongyu.han@samsung.com, E-mail: jinklee@snu.ac.kr [Department of Chemistry, Seoul National University, Seoul (Korea, Republic of)

    2014-02-03

    The color tuning behavior and switching stability of an electrically tunable colloidal photonic crystal system were studied with particular focus on the electrochemical aspects. Photonic color tuning of the colloidal arrays composed of monodisperse particles dispersed in water was achieved using external electric field through lattice constant manipulation. However, the number of effective color tuning cycle was limited due to generation of unwanted ions by electrolysis of the water medium during electrical switching. By introducing larger electrochemical potential window electrodes, such as conductive diamond-like carbon or boron-doped diamond, the switching stability was appreciably enhanced through reducing the number of ions generated.

  13. Very High Frequency Switch-Mode Power Supplies

    DEFF Research Database (Denmark)

    Madsen, Mickey Pierre

    The importance of technology and electronics in our daily life is constantly increasing. At the same time portability and energy efficiency are currently some of the hottest topics. This creates a huge need for power converters in a compact form factor and with high efficiency, which can supply...... these electronic devices. This calls for new technologies in order to miniaturize the power electronics of today. One way to do this is by increasing the switching frequency dramatically and develop very high frequency switch mode power supplies. If these converters can be designed to operate efficiently, a huge...... size, weight and cost reduction can be achieved due to the smaller energy storing elements needed at these frequencies. The research presented in this thesis focuses on exactly this. First various technologies for miniaturization of power supplies are studied, e.g. piezo electric transformers, wide...

  14. Exciter switch

    Science.gov (United States)

    Mcpeak, W. L.

    1975-01-01

    A new exciter switch assembly has been installed at the three DSN 64-m deep space stations. This assembly provides for switching Block III and Block IV exciters to either the high-power or 20-kW transmitters in either dual-carrier or single-carrier mode. In the dual-carrier mode, it provides for balancing the two drive signals from a single control panel located in the transmitter local control and remote control consoles. In addition to the improved switching capabilities, extensive monitoring of both the exciter switch assembly and Transmitter Subsystem is provided by the exciter switch monitor and display assemblies.

  15. Plasma flow switch characterization for the Los Alamos Foil Implosion Project

    International Nuclear Information System (INIS)

    Bowers, R.L.; Brownell, J.H.; Greene, A.E.; Peterson, D.L.

    1990-01-01

    The next system design under consideration for the Los Alamos Foil Implosion Project is projected to deliver tens of mega-amperes of electrical current produced by high-explosive driven flux compression generators on a time scale of about one microsecond to a load foil. The use of such generators, with time scales of order several tenths of a millisecond, leads to considerable pulse shaping problems. Previously it was noted that a commutating switch might serve as an efficient alternative to a closing switch in transferring current from a coaxial transmission line to a cylindrically imploding load. Research at the Air Force Weapons Laboratory (AFWL) has met with considerable success in efficiently transferring currents of order 10 MA to an imploding liner using the plasma flow switch concept (PFS). Besides efficiently transferring current, the plasma flow switch protects the load region from high voltages generated by an opening switch until the current is present to provide magnetic insulation. For these reasons, a PFS is being investigated as the final pulse shaping step in the design. A series of capacitor bank experiments is also being fielded to help investigate physics issues and to benchmark the codes

  16. Measurement of resistance switching dynamics in copper sulfide memristor structures

    Science.gov (United States)

    McCreery, Kaitlin; Olson, Matthew; Teitsworth, Stephen

    Resistance switching materials are the subject of current research in large part for their potential to enable novel computing devices and architectures such as resistance random access memories and neuromorphic chips. A common feature of memristive structures is the hysteretic switching between high and low resistance states which is induced by the application of a sufficiently large electric field. Here, we describe a relatively simple wet chemistry process to fabricate Cu2 S / Cu memristive structures with Cu2 S film thickness ranging up to 150 micron. In this case, resistance switching is believed to be mediated by electromigration of Cu ions from the Cu substrate into the Cu2 S film. Hysteretic current-voltage curves are measured and reveal switching voltages of about 0.8 Volts with a relatively large variance and independent of film thickness. In order to gain insight into the dynamics and variability of the switching process, we have measured the time-dependent current response to voltage pulses of varying height and duration with a time resolution of 1 ns. The transient response consists of a deterministic RC component as well as stochastically varying abrupt current steps that occur within a few microseconds of the pulse application.

  17. Vibration mitigation for in-wheel switched reluctance motor driven electric vehicle with dynamic vibration absorbing structures

    Science.gov (United States)

    Qin, Yechen; He, Chenchen; Shao, Xinxin; Du, Haiping; Xiang, Changle; Dong, Mingming

    2018-04-01

    This paper presents a new approach for vibration mitigation based on a dynamic vibration absorbing structure (DVAS) for electric vehicles (EVs) that use in-wheel switched reluctance motors (SRMs). The proposed approach aims to alleviate the negative effects of vibration caused by the unbalanced electromagnetic force (UMEF) that arises from road excitations. The analytical model of SRMs is first formulated using Fourier series, and then a model of the coupled longitudinal-vertical dynamics is developed taking into consideration the external excitations consisting of the aerodynamic drag force and road unevenness. In addition, numerical simulations for a conventional SRM-suspension system and two novel DVASs are carried out for varying road levels specified by ISO standards and vehicle velocities. The results of the comparison reveal that a 35% improvement in ride comfort, 30% improvement of road handling, and 68% improvement in air gap between rotor and stator can be achieved by adopting the novel DVAS compared to the conventional SRM-suspension system. Finally, multi-body simulation (MBS) is performed using LMS Motion to validate the feasibility of the proposed DVAS. Analysis of the results shows that the proposed method can augment the effective application of SRMs in EVs.

  18. A Switch Is Not a Switch: Syntactically-Driven Bilingual Language Control

    Science.gov (United States)

    Gollan, Tamar H.; Goldrick, Matthew

    2018-01-01

    The current study investigated the possibility that language switches could be relatively automatically triggered by context. "Single-word switches," in which bilinguals switched languages on a single word in midsentence and then immediately switched back, were contrasted with more complete "whole-language switches," in which…

  19. Switching Phenomena in a System with No Switches

    Science.gov (United States)

    Preis, Tobias; Stanley, H. Eugene

    2010-02-01

    It is widely believed that switching phenomena require switches, but this is actually not true. For an intriguing variety of switching phenomena in nature, the underlying complex system abruptly changes from one state to another in a highly discontinuous fashion. For example, financial market fluctuations are characterized by many abrupt switchings creating increasing trends ("bubble formation") and decreasing trends ("financial collapse"). Such switching occurs on time scales ranging from macroscopic bubbles persisting for hundreds of days to microscopic bubbles persisting only for a few seconds. We analyze a database containing 13,991,275 German DAX Future transactions recorded with a time resolution of 10 msec. For comparison, a database providing 2,592,531 of all S&P500 daily closing prices is used. We ask whether these ubiquitous switching phenomena have quantifiable features independent of the time horizon studied. We find striking scale-free behavior of the volatility after each switching occurs. We interpret our findings as being consistent with time-dependent collective behavior of financial market participants. We test the possible universality of our result by performing a parallel analysis of fluctuations in transaction volume and time intervals between trades. We show that these financial market switching processes have properties similar to those of phase transitions. We suggest that the well-known catastrophic bubbles that occur on large time scales—such as the most recent financial crisis—are no outliers but single dramatic representatives caused by the switching between upward and downward trends on time scales varying over nine orders of magnitude from very large (≈102 days) down to very small (≈10 ms).

  20. electric vehicle

    Directory of Open Access Journals (Sweden)

    W. R. Lee

    1999-01-01

    Full Text Available A major problem facing battery-powered electric vehicles is in their batteries: weight and charge capacity. Thus, a battery-powered electric vehicle only has a short driving range. To travel for a longer distance, the batteries are required to be recharged frequently. In this paper, we construct a model for a battery-powered electric vehicle, in which driving strategy is to be obtained such that the total travelling time between two locations is minimized. The problem is formulated as an optimization problem with switching times and speed as decision variables. This is an unconventional optimization problem. However, by using the control parametrization enhancing technique (CPET, it is shown that this unconventional optimization is equivalent to a conventional optimal parameter selection problem. Numerical examples are solved using the proposed method.

  1. A switched-reluctance motor for aerospace application: Design, analysis and results

    NARCIS (Netherlands)

    Tursini, M.; Villani, M.; Fabri, G.; Di Leonardo, L.

    2017-01-01

    This paper presents a five-phase switched reluctance motor designed to satisfy the requirements of flap actuators in medium size aircrafts, a real example of the more electric aircraft trend. In normal conditions the machine operates with two phases conducting simultaneously but it is designed to

  2. Characteristics of multilevel storage and switching dynamics in resistive switching cell of Al2O3/HfO2/Al2O3 sandwich structure

    Science.gov (United States)

    Liu, Jian; Yang, Huafeng; Ma, Zhongyuan; Chen, Kunji; Zhang, Xinxin; Huang, Xinfan; Oda, Shunri

    2018-01-01

    We reported an Al2O3/HfO2/Al2O3 sandwich structure resistive switching device with significant improvement of multilevel cell (MLC) operation capability, which exhibited that four stable and distinct resistance states (one low resistance state and three high resistance states) can be achieved by controlling the Reset stop voltages (V Reset-stop) during the Reset operation. The improved MLC operation capability can be attributed to the R HRS/R LRS ratio enhancement resulting from increasing of the series resistance and decreasing of leakage current by inserting two Al2O3 layers. For the high-speed switching applications, we studied the initial switching dynamics by using the measurements of the pulse width and amplitude dependence of Set and Reset switching characteristics. The results showed that under the same pulse amplitude conditions, the initial Set progress is faster than the initial Reset progress, which can be explained by thermal-assisted electric field induced rupture model in the oxygen vacancies conductive filament. Thus, proper combination of varying pulse amplitude and width can help us to optimize the device operation parameters. Moreover, the device demonstrated ultrafast program/erase speed (10 ns) and good pulse switching endurance (105 cycles) characteristics, which are suitable for high-density and fast-speed nonvolatile memory applications.

  3. Memory resistive switching in CeO2-based film microstructures patterned by a focused ion beam

    DEFF Research Database (Denmark)

    Velichko, A.; Boriskov, P.; Grishin, A.

    2014-01-01

    ) with insulating properties and a semiconducting ormetallic lowresistance state (ON) with resistance ratios up to 104. The influence of micro-scaling and defects formed at the cell boundaries during etching on its electrical characteristics has been analyzed. The appearance of a switching channel at the moment......Heteroepitaxial CeO2 (80 nm)/La0.5Sr0.5CoO3 (500 nm) film structure has been pulsed laser deposited on a sapphire substrate. The Ag/CeO2 microjunctions patterned by a focused ion beam on a La0.5Sr0.5CoO3 film exhibit reproducible reversible switching between a high resistance state (OFF...... of the electrical forming, responsible for the memory effect, has been proved, along with a mechanism of a self-healing electrical breakdown. © 2014 Elsevier B.V. All rights reserved....

  4. Universal ferroelectric switching dynamics of vinylidene fluoride-trifluoroethylene copolymer films

    KAUST Repository

    Hu, Weijin

    2014-04-24

    In this work, switching dynamics of poly(vinylidene fluoride- trifluoroethylene) [P(VDF-TrFE)] copolymer films are investigated over unprecedentedly wide ranges of temperature and electric field. Remarkably, domain switching of copolymer films obeys well the classical domain nucleation and growth model although the origin of ferroelectricity in organic ferroelectric materials inherently differs from the inorganic counterparts. A lower coercivity limit of 50 ...MV/m and 180 domain wall energy of 60 ...mJ/m 2 are determined for P(VDF-TrFE) films. Furthermore, we discover in copolymer films an anomalous temperature-dependent crossover behavior between two power-law scaling regimes of frequency-dependent coercivity, which is attributed to the transition between flow and creep motions of domain walls. Our observations shed new light on the switching dynamics of semi-crystalline ferroelectric polymers, and such understandings are critical for realizing their reliable applications.

  5. Universal ferroelectric switching dynamics of vinylidene fluoride-trifluoroethylene copolymer films

    KAUST Repository

    Hu, Weijin; Juo, Deng-Ming; You, Lu; Wang, Junling; Chen, Yi-Chun; Chu, Ying-Hao; Wu, Tao

    2014-01-01

    In this work, switching dynamics of poly(vinylidene fluoride- trifluoroethylene) [P(VDF-TrFE)] copolymer films are investigated over unprecedentedly wide ranges of temperature and electric field. Remarkably, domain switching of copolymer films obeys well the classical domain nucleation and growth model although the origin of ferroelectricity in organic ferroelectric materials inherently differs from the inorganic counterparts. A lower coercivity limit of 50 ...MV/m and 180 domain wall energy of 60 ...mJ/m 2 are determined for P(VDF-TrFE) films. Furthermore, we discover in copolymer films an anomalous temperature-dependent crossover behavior between two power-law scaling regimes of frequency-dependent coercivity, which is attributed to the transition between flow and creep motions of domain walls. Our observations shed new light on the switching dynamics of semi-crystalline ferroelectric polymers, and such understandings are critical for realizing their reliable applications.

  6. Electrical model of dielectric barrier discharge homogenous and filamentary modes

    Science.gov (United States)

    López-Fernandez, J. A.; Peña-Eguiluz, R.; López-Callejas, R.; Mercado-Cabrera, A.; Valencia-Alvarado, R.; Muñoz-Castro, A.; Rodríguez-Méndez, B. G.

    2017-01-01

    This work proposes an electrical model that combines homogeneous and filamentary modes of an atmospheric pressure dielectric barrier discharge cell. A voltage controlled electric current source has been utilized to implement the power law equation that represents the homogeneous discharge mode, which starts when the gas breakdown voltage is reached. The filamentary mode implies the emergence of electric current conducting channels (microdischarges), to add this phenomenon an RC circuit commutated by an ideal switch has been proposed. The switch activation occurs at a higher voltage level than the gas breakdown voltage because it is necessary to impose a huge electric field that contributes to the appearance of streamers. The model allows the estimation of several electric parameters inside the reactor that cannot be measured. Also, it is possible to appreciate the modes of the DBD depending on the applied voltage magnitude. Finally, it has been recognized a good agreement between simulation outcomes and experimental results.

  7. Electrical model of dielectric barrier discharge homogenous and filamentary modes

    International Nuclear Information System (INIS)

    López-Fernandez, J A; Peña-Eguiluz, R; López-Callejas, R; Mercado-Cabrera, A; Valencia-Alvarado, R; Muñoz-Castro, A; Rodríguez-Méndez, B G

    2017-01-01

    This work proposes an electrical model that combines homogeneous and filamentary modes of an atmospheric pressure dielectric barrier discharge cell. A voltage controlled electric current source has been utilized to implement the power law equation that represents the homogeneous discharge mode, which starts when the gas breakdown voltage is reached. The filamentary mode implies the emergence of electric current conducting channels (microdischarges), to add this phenomenon an RC circuit commutated by an ideal switch has been proposed. The switch activation occurs at a higher voltage level than the gas breakdown voltage because it is necessary to impose a huge electric field that contributes to the appearance of streamers. The model allows the estimation of several electric parameters inside the reactor that cannot be measured. Also, it is possible to appreciate the modes of the DBD depending on the applied voltage magnitude. Finally, it has been recognized a good agreement between simulation outcomes and experimental results. (paper)

  8. Optical switching and photoluminescence in erbium-implanted vanadium dioxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Lim, Herianto, E-mail: mail@heriantolim.com; Stavrias, Nikolas; Johnson, Brett C.; McCallum, Jeffrey C. [School of Physics, University of Melbourne, Parkville, Victoria 3010 (Australia); Marvel, Robert E.; Haglund, Richard F. [Department of Physics and Astronomy, Vanderbilt University, Nashville, Tennessee 37240 (United States)

    2014-03-07

    Vanadium dioxide (VO{sub 2}) is under intensive consideration for optical switching due to its reversible phase transition, which features a drastic and rapid shift in infrared reflectivity. Classified as an insulator–to–metal transition, the phase transition in VO{sub 2} can be induced thermally, electrically, and optically. When induced optically, the transition can occur on sub-picosecond time scales. It is interesting to dope VO{sub 2} with erbium ions (Er{sup 3+}) and observe their combined properties. The first excited-state luminescence of Er{sup 3+} lies within the wavelength window of minimal transmission-loss in silicon and has been widely utilized for signal amplification and generation in silicon photonics. The incorporation of Er{sup 3+} into VO{sub 2} could therefore result in a novel photonic material capable of simultaneous optical switching and amplification. In this work, we investigate the optical switching and photoluminescence in Er-implanted VO{sub 2} thin films. Thermally driven optical switching is demonstrated in the Er-implanted VO{sub 2} by infrared reflectometry. Photoluminescence is observed in the thin films annealed at ∼800 °C or above. In addition, Raman spectroscopy and a statistical analysis of switching hysteresis are carried out to assess the effects of the ion implantation on the VO{sub 2} thin films. We conclude that Er-implanted VO{sub 2} can function as an optical switch and amplifier, but with reduced switching quality compared to pure VO{sub 2}.

  9. Interfacial behavior of resistive switching in ITO–PVK–Al WORM memory devices

    International Nuclear Information System (INIS)

    Whitcher, T J; Woon, K L; Wong, W S; Chanlek, N; Nakajima, H; Saisopa, T; Songsiriritthigul, P

    2016-01-01

    Understanding the mechanism of resistive switching in a memory device is fundamental in order to improve device performance. The mechanism of current switching in a basic organic write-once read-many (WORM) memory device is investigated by determining the energy level alignments of indium tin oxide (ITO), poly(9-vinylcarbazole) (PVK) and aluminum (Al) using x-ray and ultraviolet photoelectron spectroscopy, current–voltage characterization and Auger depth profiling. The current switching mechanism was determined to be controlled by the interface between the ITO and the PVK. The electric field applied across the device causes the ITO from the uneven surface of the anode to form metallic filaments through the PVK, causing a shorting effect within the device leading to increased conduction. This was found to be independent of the PVK thickness, although the switch-on voltage was non-linearly dependent on the thickness. The formation of these filaments also caused the destruction of the interfacial dipole at the PVK–Al interface. (paper)

  10. Interfacial behavior of resistive switching in ITO-PVK-Al WORM memory devices

    Science.gov (United States)

    Whitcher, T. J.; Woon, K. L.; Wong, W. S.; Chanlek, N.; Nakajima, H.; Saisopa, T.; Songsiriritthigul, P.

    2016-02-01

    Understanding the mechanism of resistive switching in a memory device is fundamental in order to improve device performance. The mechanism of current switching in a basic organic write-once read-many (WORM) memory device is investigated by determining the energy level alignments of indium tin oxide (ITO), poly(9-vinylcarbazole) (PVK) and aluminum (Al) using x-ray and ultraviolet photoelectron spectroscopy, current-voltage characterization and Auger depth profiling. The current switching mechanism was determined to be controlled by the interface between the ITO and the PVK. The electric field applied across the device causes the ITO from the uneven surface of the anode to form metallic filaments through the PVK, causing a shorting effect within the device leading to increased conduction. This was found to be independent of the PVK thickness, although the switch-on voltage was non-linearly dependent on the thickness. The formation of these filaments also caused the destruction of the interfacial dipole at the PVK-Al interface.

  11. Electrical fatigue behaviour in lead zirconate titanate: an experimental and theoretical study

    International Nuclear Information System (INIS)

    Bhattacharyya, Mainak; Arockiarajan, A

    2013-01-01

    A systematic investigation on electrical fatigue in lead zirconate titanate (PZT) is carried out for different loading frequencies. Experiments are conducted up to 10 6 cycles to measure the electrical displacement and longitudinal strain on bulk ceramics in the bipolar mode with large electrical loading conditions. A simplified macroscopic model based on physical mechanisms of domain switching is developed to predict the non-linear behaviour. In this model, the volume fraction of a domain is used as the internal variable by considering the mechanisms of domain nucleation and propagation (domain wall movement). The measured material properties at different fatigue cycles are incorporated into the switching model as damage parameters and the classical strain versus electric field and electric displacement versus electric field curves are simulated. Comparison between the experiments and simulations shows that the proposed model can reproduce the characteristics of non-linear as well as fatigue responses. (paper)

  12. Electrical fatigue behaviour in lead zirconate titanate: an experimental and theoretical study

    Science.gov (United States)

    Bhattacharyya, Mainak; Arockiarajan, A.

    2013-08-01

    A systematic investigation on electrical fatigue in lead zirconate titanate (PZT) is carried out for different loading frequencies. Experiments are conducted up to 106 cycles to measure the electrical displacement and longitudinal strain on bulk ceramics in the bipolar mode with large electrical loading conditions. A simplified macroscopic model based on physical mechanisms of domain switching is developed to predict the non-linear behaviour. In this model, the volume fraction of a domain is used as the internal variable by considering the mechanisms of domain nucleation and propagation (domain wall movement). The measured material properties at different fatigue cycles are incorporated into the switching model as damage parameters and the classical strain versus electric field and electric displacement versus electric field curves are simulated. Comparison between the experiments and simulations shows that the proposed model can reproduce the characteristics of non-linear as well as fatigue responses.

  13. Architecture and evaluation of software-defined optical switching matrix for hybrid data centers

    DEFF Research Database (Denmark)

    Mehmeri, Victor; Vegas Olmos, Juan José; Tafur Monroy, Idelfonso

    2016-01-01

    A software architecture is proposed for hybrid packet/optical data centers employing programmable NETCONF-enabled optical switching matrix, and a performance evaluation is presented comparing hybrid and electrical-only architectures for elephant flows under different traffic patterns. Network...

  14. Two-dimensional modeling of x-ray output from switched foil implosions on Procyon

    Science.gov (United States)

    Bowers, R. L.; Nakafuji, G.; Greene, A. E.; McLenithan, K. D.; Peterson, D. L.; Roderick, N. F.

    1996-09-01

    A series of two-dimensional radiation magnetohydrodynamic calculations are presented of a Z-pinch implosion using a plasma flow switch. Results from a recent experiment using the high explosive driven generator Procyon, which delivered 16.5 MA to a plasma flow switch and switched about 15 MA into a static load, are used to study the implosion of a 29 mg load foil [J. H. Goforth et al., ``Review of the Procyon Explosive Pulsed Power System,'' in Ninth IEEE Pulsed Power Conference, June 1993, Albuquerque, edited by K. R. Prestwich and W. L. Baker (Institute of Electrical and Electronics Engineers, Piscataway, NJ, 1993), p. 36]. The interaction of the switch with the load plasma and the effects of background plasma on the total radiation output is examined. Models which assume ideal switching are also included. Also included are the effects of perturbations in the load plasma which may be associated with initial vaporization of the load foil. If the background plasma density in the switch region and in the load region does not affect the dynamics, the pinch is predicted to produce a total radiation output of about 4 MJ. Including perturbations of the load plasma associated with switching and assuming a background plasma density after switching in excess of 10-7 g/cm3 results in a total output from the pinch of about 0.6 MJ.

  15. An intelligent switch with back-propagation neural network based hybrid power system

    Science.gov (United States)

    Perdana, R. H. Y.; Fibriana, F.

    2018-03-01

    The consumption of conventional energy such as fossil fuels plays the critical role in the global warming issues. The carbon dioxide, methane, nitrous oxide, etc. could lead the greenhouse effects and change the climate pattern. In fact, 77% of the electrical energy is generated from fossil fuels combustion. Therefore, it is necessary to use the renewable energy sources for reducing the conventional energy consumption regarding electricity generation. This paper presents an intelligent switch to combine both energy resources, i.e., the solar panels as the renewable energy with the conventional energy from the State Electricity Enterprise (PLN). The artificial intelligence technology with the back-propagation neural network was designed to control the flow of energy that is distributed dynamically based on renewable energy generation. By the continuous monitoring on each load and source, the dynamic pattern of the intelligent switch was better than the conventional switching method. The first experimental results for 60 W solar panels showed the standard deviation of the trial at 0.7 and standard deviation of the experiment at 0.28. The second operation for a 900 W of solar panel obtained the standard deviation of the trial at 0.05 and 0.18 for the standard deviation of the experiment. Moreover, the accuracy reached 83% using this method. By the combination of the back-propagation neural network with the observation of energy usage of the load using wireless sensor network, each load can be evenly distributed and will impact on the reduction of conventional energy usage.

  16. Cost-effective method of manufacturing a 3D MEMS optical switch

    Science.gov (United States)

    Carr, Emily; Zhang, Ping; Keebaugh, Doug; Chau, Kelvin

    2009-02-01

    growth of data and video transport networks. All-optical switching eliminates the need for optical-electrical conversion offering the ability to switch optical signals transparently: independent of data rates, formats and wavelength. It also provides network operators much needed automation capabilities to create, monitor and protect optical light paths. To further accelerate the market penetration, it is necessary to identify a path to reduce the manufacturing cost significantly as well as enhance the overall system performance, uniformity and reliability. Currently, most MEMS optical switches are assembled through die level flip-chip bonding with either epoxies or solder bumps. This is due to the alignment accuracy requirements of the switch assembly, defect matching of individual die, and cost of the individual components. In this paper, a wafer level assembly approach is reported based on silicon fusion bonding which aims to reduce the packaging time, defect count and cost through volume production. This approach is successfully demonstrated by the integration of two 6-inch wafers: a mirror array wafer and a "snap-guard" wafer, which provides a mechanical structure on top of the micromirror to prevent electrostatic snap-down. The direct silicon-to-silicon bond eliminates the CTEmismatch and stress issues caused by non-silicon bonding agents. Results from a completed integrated switch assembly will be presented, which demonstrates the reliability and uniformity of some key parameters of this MEMS optical switch.

  17. Design improvement of permanent magnet flux switching motor with dual rotor structure

    Science.gov (United States)

    Soomro, H. A.; Sulaiman, E.; Kumar, R.; Rahim, N. S.

    2017-08-01

    This paper presents design enhancement to reduce permanent magnet (PM) volume for 7S-6P-7S dual rotor permanent magnet flux-switching machines (DRPMFSM) for electric vehicle application. In recent years, Permanent magnet flux switching (PMFS) motor and a new member of brushless permanent magnet machine are prominently used for the electric vehicle. Though, more volume of Rare-Earth Permanent Magnet (REPM) is used to increase the cost and weight of these motors. Thus, to overcome the issue, new configuration of 7S-6P- 7S dual rotor permanent magnet flux-switching machine (DRPMFSM) has been proposed and investigated in this paper. Initially proposed 7S-6P-7S DRPMFSM has been optimized using “deterministic optimization” to reduce the volume of PM and to attain optimum performances. In addition, the performances of initial and optimized DRPMFSM have been compared such that back-emf, cogging torque, average torque, torque and power vs speed performances, losses and efficiency have been analysed by 2D-finite element analysis (FEA) using the JMAG- Designer software ver. 14.1. Consequently, the final design 7S-6P-7S DRPMFSM has achieved the efficiency of 83.91% at reduced PM volume than initial design to confirm the better efficient motor for HEVs applications.

  18. Resistive switching in polycrystalline YMnO3 thin films

    Directory of Open Access Journals (Sweden)

    A. Bogusz

    2014-10-01

    Full Text Available We report a unipolar, nonvolatile resistive switching in polycrystalline YMnO3 thin films grown by pulsed laser deposition and sandwiched between Au top and Ti/Pt bottom electrodes. The ratio of the resistance in the OFF and ON state is larger than 103. The observed phenomena can be attributed to the formation and rupture of conductive filaments within the multiferroic YMnO3 film. The generation of conductive paths under applied electric field is discussed in terms of the presence of grain boundaries and charged domain walls inherently formed in hexagonal YMnO3. Our findings suggest that engineering of the ferroelectric domains might be a promising route for designing and fabrication of novel resistive switching devices.

  19. Aseismatic design of electrical equipments and instruments for nuclear power stations

    International Nuclear Information System (INIS)

    Suzuki, Yasuharu; Nishizawa, Kazuo; Miyazaki, Yoshio; Miura, Takumi

    1977-01-01

    The aseismatic design of electrical instruments is carried out according to IEEE Standard 344-1971 in the USA. In Japan also, the method of aseismatic design of electrical instruments has been investigated by the representatives of electric power companies and electric machine makers since 1972. In Hitachi Ltd., the statical method of confirming aseismatic property was established on the basis of the rigid design for electrical instruments. It is convenient to examine the aseismatic property of electrical equipments by classifying them into control and switch boards, electrical appliances, equipments and circuits. It is possible to use the static method treating earthquake force as static load by avoiding resonance with the electrical equipments which have the higher natural frequency than that of buildings. The purposes of the vibration test are to prove the validity of the theoretical analysis, to clarify the vibration characteristics, and to confirm the maintenance of functions and the strength of the equipments. The vibration tests of control boards, the switch boards of enclosed type, motor control centers, the racks for instrumentation, storage batteries and electrical appliances are explained. Moreover, the vibration analysis with a computer according to finite element method is described. (Kako, I.)

  20. In-situ TEM study of domain switching in GaN thin films

    Science.gov (United States)

    Wang, Baoming; Wang, Tun; Haque, Aman; Snure, Michael; Heller, Eric; Glavin, Nicholas

    2017-09-01

    Microstructural response of gallium nitride (GaN) films, grown by metal-organic chemical vapor deposition, was studied as a function of applied electrical field. In-situ transmission electron microscopy showed sudden change in the electron diffraction pattern reflecting domain switching at around 20 V bias, applied perpendicular to the polarization direction. No such switching was observed for thicker films or for the field applied along the polarization direction. This anomalous behavior is explained by the nanoscale size effects on the piezoelectric coefficients of GaN, which can be 2-3 times larger than the bulk value. As a result, a large amount of internal energy can be imparted in 100 nm thick films to induce domain switching at relatively lower voltages to induce such events at the bulk scale.

  1. Complete achromatic and robustness electro-optic switch between two integrated optical waveguides

    Science.gov (United States)

    Huang, Wei; Kyoseva, Elica

    2018-01-01

    In this paper, we present a novel design of electro-optic modulator and optical switching device, based on current integrated optics technique. The advantages of our optical switching device are broadband of input light wavelength, robustness against varying device length and operation voltages, with reference to previous design. Conforming to our results of previous paper [Huang et al, phys. lett. a, 90, 053837], the coupling of the waveguides has a hyperbolic-secant shape. while detuning has a sign flip at maximum coupling, we called it as with a sign flip of phase mismatch model. The a sign flip of phase mismatch model can produce complete robust population transfer. In this paper, we enhance this device to switch light intensity controllable, by tuning external electric field based on electro-optic effect.

  2. Software architecture for hybrid electrical/optical data center network

    DEFF Research Database (Denmark)

    Mehmeri, Victor; Vegas Olmos, Juan José; Tafur Monroy, Idelfonso

    2016-01-01

    This paper presents hardware and software architecture based on Software-Defined Networking (SDN) paradigm and OpenFlow/NETCONF protocols for enabling topology management of hybrid electrical/optical switching data center networks. In particular, a development on top of SDN open-source controller...... OpenDaylight is presented to control an optical switching matrix based on Micro-Electro-Mechanical System (MEMS) technology....

  3. Implementation of Bin Packing Model for Reed Switch Production Planning

    Energy Technology Data Exchange (ETDEWEB)

    Parra, Rainier Romero [Polytechnic University of Baja California, Calle de la Claridad S/N, Col Plutarco Elias Calles, Mexicali, B. C., 21376 (Mexico); Burtseva, Larysa [Engineering Institute, Autonomous University of Baja California, Calle de la Normal S/N, Col. Insurgentes Este, Mexicali, BC, 21280 (Mexico)

    2010-06-17

    This paper presents a form to resolve a real problem of efficient material election in reed switch manufacturing. The carrying out of the consumer demands depends on the stochastic results of the classification process where each lot of switches is distributed into bins according to an electric measure value. Various glass types are employed for the switch manufacturing. The effect caused by the glass type variation on the switch classification results was investigated. Based on real data statistic analysis, the problem is reduced to the lot number minimizing taking into consideration the glass type, and interpreted as a bin packing problem generalization. On difference to the classic bin packing problem, in the considered case, an item represents a set of pieces; a container is divided into a number of bins (sub-containers); the bin capacity is variable; there are the assignment restrictions between bins and sets of pieces; the items are allowed to be fragmented into bins and containers. The problem has a high complexity. A heuristic offline algorithm is proposed to find the quantity, types and packing sequence of containers, the item fragments associated with containers and bins. The bin capacities do not affect the algorithm.

  4. Implementation of Bin Packing Model for Reed Switch Production Planning

    International Nuclear Information System (INIS)

    Parra, Rainier Romero; Burtseva, Larysa

    2010-01-01

    This paper presents a form to resolve a real problem of efficient material election in reed switch manufacturing. The carrying out of the consumer demands depends on the stochastic results of the classification process where each lot of switches is distributed into bins according to an electric measure value. Various glass types are employed for the switch manufacturing. The effect caused by the glass type variation on the switch classification results was investigated. Based on real data statistic analysis, the problem is reduced to the lot number minimizing taking into consideration the glass type, and interpreted as a bin packing problem generalization. On difference to the classic bin packing problem, in the considered case, an item represents a set of pieces; a container is divided into a number of bins (sub-containers); the bin capacity is variable; there are the assignment restrictions between bins and sets of pieces; the items are allowed to be fragmented into bins and containers. The problem has a high complexity. A heuristic offline algorithm is proposed to find the quantity, types and packing sequence of containers, the item fragments associated with containers and bins. The bin capacities do not affect the algorithm.

  5. Electrical control of exchange bias via oxygen migration across CoO-ZnO nanocomposite barrier

    Science.gov (United States)

    Li, Q.; Yan, S. S.; Xu, J.; Li, S. D.; Zhao, G. X.; Long, Y. Z.; Shen, T. T.; Zhang, K.; Zhang, J.

    2016-12-01

    We proposed a nanocomposite barrier CoO-ZnO for magnetism manipulation in Co/CoO-ZnO/Ag heterojunctions. Both electrical control of magnetism and resistive switching were realized in this junction. An electrical tunable exchange bias of CoO1-v (v denotes O vacancies) on Co films was realized using voltages below 1 volt. The magnetism modulation associated with resistive switching can be attributed to the oxygen ions migration between the insulating CoO1-v layer and the semiconductive ZnO1-v layer, which can cause both ferromagnetic phase and resistance switching of CoO1-v layer.

  6. A Novel Application of Zero-Current-Switching Quasiresonant Buck Converter for Battery Chargers

    Directory of Open Access Journals (Sweden)

    Kuo-Kuang Chen

    2011-01-01

    Full Text Available The main purpose of this paper is to develop a novel application of a resonant switch converter for battery chargers. A zero-current-switching (ZCS converter with a quasiresonant converter (QRC was used as the main structure. The proposed ZCS dc–dc battery charger has a straightforward structure, low cost, easy control, and high efficiency. The operating principles and design procedure of the proposed charger are thoroughly analyzed. The optimal values of the resonant components are computed by applying the characteristic curve and electric functions derived from the circuit configuration. Experiments were conducted using lead-acid batteries. The optimal parameters of the resonance components were determined using the load characteristic curve diagrams. These values enable the battery charger to turn on and off at zero current, resulting in a reduction of switching losses. The results of the experiments show that when compared with the traditional pulse-width-modulation (PWM converter for a battery charger, the buck converter with a zero- current-switching quasiresonant converter can lower the temperature of the activepower switch.

  7. Improving electrical power systems reliability through locally controlled distributed curtailable load

    Science.gov (United States)

    Dehbozorgi, Mohammad Reza

    2000-10-01

    Improvements in power system reliability have always been of interest to both power companies and customers. Since there are no sizable electrical energy storage elements in electrical power systems, the generated power should match the load demand at any given time. Failure to meet this balance may cause severe system problems, including loss of generation and system blackouts. This thesis proposes a methodology which can respond to either loss of generation or loss of load. It is based on switching of electric water heaters using power system frequency as the controlling signal. The proposed methodology encounters, and the thesis has addressed, the following associated problems. The controller must be interfaced with the existing thermostat control. When necessary to switch on loads, the water in the tank should not be overheated. Rapid switching of blocks of load, or chattering, has been considered. The contributions of the thesis are: (A) A system has been proposed which makes a significant portion of the distributed loads connected to a power system to behave in a predetermined manner to improve the power system response during disturbances. (B) The action of the proposed system is transparent to the customers. (C) The thesis proposes a simple analysis for determining the amount of such loads which might be switched and relates this amount to the size of the disturbances which can occur in the utility. (D) The proposed system acts without any formal communication links, solely using the embedded information present system-wide. (E) The methodology of the thesis proposes switching of water heater loads based on a simple, localized frequency set-point controller. The thesis has identified the consequent problem of rapid switching of distributed loads, which is referred to as chattering. (F) Two approaches have been proposed to reduce chattering to tolerable levels. (G) A frequency controller has been designed and built according to the specifications required to

  8. A Study on the Improvement of Switching Speed of NPT-IGBT by Fast Neutron Irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Baek, H. N.; Sun, G. M.; Kim, J. S.; Hoang, S. M. T.; Jin, M. E.; Jin, S. B.; Ahn, S. H. [KAERI, Daejeon (Korea, Republic of)

    2016-05-15

    The insulated gate bipolar transistor (IGBT) has been widely used for high power switching devices due to low on-state forward voltage drop and fast switching speed. But, turn-off delay time occurs due to the tail current generated by the minority carrier existing in the n-drift region during turn-off, which reduces the switching speed. Recently, to mitigate this problem, studies on the control of the MCLT to improve the switching speed of IGBTs are carried out. A crystal defect is formed in the n-drift region of an IGBT to realize a deep energy level within the energy band. The deep level act as the recombination center of the minority carrier to reduce the turn-off delay time and control the lifetime by reducing the lifetime of the minority carrier injected during the device operation. The particle-beam irradiation method, such as electron, proton, fast neutron and others, has been used to control the lifetime of the minority carrier of a silicon power semiconductor device. To improve the switching speed of a IGBT, devices were produced by irradiating various doses of fast neutron, and electrical properties were comparatively analyzed with the IGBT device where before irradiated. The reduced in the lifetime of the minority carrier flowing into the n-drift region due to the crystal defect helps improve the switching speed of the IGBT. But, the resistance component increased due to the crystal defect generated by the fast neutron irradiation in the on-state, increasing of the forward voltage drop. So, to improve and optimize the IGBT performance, appropriate condition should be determined by trading off each electrical properties.

  9. A Study on the Improvement of Switching Speed of NPT-IGBT by Fast Neutron Irradiation

    International Nuclear Information System (INIS)

    Baek, H. N.; Sun, G. M.; Kim, J. S.; Hoang, S. M. T.; Jin, M. E.; Jin, S. B.; Ahn, S. H.

    2016-01-01

    The insulated gate bipolar transistor (IGBT) has been widely used for high power switching devices due to low on-state forward voltage drop and fast switching speed. But, turn-off delay time occurs due to the tail current generated by the minority carrier existing in the n-drift region during turn-off, which reduces the switching speed. Recently, to mitigate this problem, studies on the control of the MCLT to improve the switching speed of IGBTs are carried out. A crystal defect is formed in the n-drift region of an IGBT to realize a deep energy level within the energy band. The deep level act as the recombination center of the minority carrier to reduce the turn-off delay time and control the lifetime by reducing the lifetime of the minority carrier injected during the device operation. The particle-beam irradiation method, such as electron, proton, fast neutron and others, has been used to control the lifetime of the minority carrier of a silicon power semiconductor device. To improve the switching speed of a IGBT, devices were produced by irradiating various doses of fast neutron, and electrical properties were comparatively analyzed with the IGBT device where before irradiated. The reduced in the lifetime of the minority carrier flowing into the n-drift region due to the crystal defect helps improve the switching speed of the IGBT. But, the resistance component increased due to the crystal defect generated by the fast neutron irradiation in the on-state, increasing of the forward voltage drop. So, to improve and optimize the IGBT performance, appropriate condition should be determined by trading off each electrical properties

  10. Optimal control of switching time in switched stochastic systems with multi-switching times and different costs

    Science.gov (United States)

    Liu, Xiaomei; Li, Shengtao; Zhang, Kanjian

    2017-08-01

    In this paper, we solve an optimal control problem for a class of time-invariant switched stochastic systems with multi-switching times, where the objective is to minimise a cost functional with different costs defined on the states. In particular, we focus on problems in which a pre-specified sequence of active subsystems is given and the switching times are the only control variables. Based on the calculus of variation, we derive the gradient of the cost functional with respect to the switching times on an especially simple form, which can be directly used in gradient descent algorithms to locate the optimal switching instants. Finally, a numerical example is given, highlighting the validity of the proposed methodology.

  11. Transient-Switch-Signal Suppressor

    Science.gov (United States)

    Bozeman, Richard J., Jr.

    1995-01-01

    Circuit delays transmission of switch-opening or switch-closing signal until after preset suppression time. Used to prevent transmission of undesired momentary switch signal. Basic mode of operation simple. Beginning of switch signal initiates timing sequence. If switch signal persists after preset suppression time, circuit transmits switch signal to external circuitry. If switch signal no longer present after suppression time, switch signal deemed transient, and circuit does not pass signal on to external circuitry, as though no transient switch signal. Suppression time preset at value large enough to allow for damping of underlying pressure wave or other mechanical transient.

  12. Qualification of electric equipments for nuclear power plants

    International Nuclear Information System (INIS)

    Chauvin, G.; Raimondo, E.

    1983-03-01

    Description of the testing equipment, testing methods and standards of the resistance to seisms of electrical equipments (switches, pump motors, electrovalves, ...) for electronuclear power plants in France. Presentation of the French design and construction rules for electrical devices in the domestic and export nuclear market (resistance to thermodynamical and chemical stresses, to seisms, etc...) [fr

  13. Investigation of the electroforming and resistive switching mechanisms in Fe-doped SrTiO3 thin films

    International Nuclear Information System (INIS)

    Menke, Tobias

    2009-01-01

    To overcome the physical limits of todays memory technologies new concepts are needed. The resistive random access memory (RRAM), which bases on a nonvolatile and repeatable change of the resistance by external electrical stimuli, seems to be one promising candidate. Within the scope of this work, the model system Strontium titanate (SrTiO 3 ) has been investigated to get a deeper understanding of the underlying physical mechanism related to the resistance change. The electrical properties of SrTiO 3 (STO) can be modulated from a band insulator to metallic conduction by a self-doping with oxygen vacancies which act as shallow donors. A local accumulation or depletion of oxygen vacancies at the vicinity of the surface will lead to a local redox process which is responsible for the resistance change. To study the influence of the interfaces on the switching properties of SrTiO 3 thin films, epitaxial films of Fe-doped SrTiO 3 were grown on different bottom electrodes (SrRuO 3 , LaNiO 3 und Nb:STO) by a ''Pulsed Laser Deposition'' technique. An atomic force microscope equipped with a conductive tip (LC-AFM) allowed studying the conductivity of the deposited films on the nanometer scale. Resistive switching of lateral structures smaller than ∝5 nm could be realized which represents the potential of this material for a further downscaling of RRAM devices. The deposition of top electrodes, made of Platinum or Titanium, allowed the electrical characterization of metal-insulator-metal (MIM) structures. An extensive investigation of pristine MIM-devices by impedance spectroscopy showed the big impact of the metal-insulator interface on the overall device resistance. Furthermore, a chemical polarization was studied by dynamical current sweeps and identified as a volatile resistance variation. Usually a forming procedure is needed to ''enable'' the resistive switching properties in MIM devices. The electroforming of these devices was extensively studied and could be

  14. A vacancy-modulated self-selective resistive switching memory with pronounced nonlinear behavior

    Science.gov (United States)

    Ma, Haili; Feng, Jie; Gao, Tian; Zhu, Xi

    2017-12-01

    In this study, we report a self-selective (nonlinear) resistive switching memory cell, with high on-state half-bias nonlinearity of 650, sub-μA operating current, and high On/Off ratios above 100×. Regarding the cell structure, a thermal oxidized HfO x layer in combination with a sputtered Ta2O5 layer was configured as an active stack, with Pt and Hf as top and bottom electrodes, respectively. The Ta2O5 acts as a selective layer as well as a series resistor, which could make the resistive switching happened in HfO x layer. Through the analysis of the physicochemical properties and electrical conduction mechanisms at each state, a vacancy-modulated resistance switching model was proposed to explain the switching behavior. The conductivity of HfO x layer was changed by polarity-dependent drift of the oxygen vacancy ( V o), resulting in an electron hopping distance change during switching. With the help of Ta2O5 selective layer, high nonlinearity observed in low resistance state. The proposed material stack shows a promising prospect to act as a self-selective cell for 3D vertical RRAM application.

  15. Resistive switching in ZrO2 films: physical mechanism for filament formation and dissolution

    International Nuclear Information System (INIS)

    Parreira, Pedro; McVitie, Stephen; MacLaren, D A

    2014-01-01

    Resistive switching devices, also called memristors, have attracted much attention due to their potential memory, logic and even neuromorphic applications. Multiple physical mechanisms underpin the non-volatile switching process and are ultimately believed to give rise to the formation and dissolution of a discrete conductive filament within the active layer. However, a detailed nanoscopic analysis that fully explains all the contributory events remains to be presented. Here, we present aspects of the switching events that are correlated back to tunable details of the device fabrication process. Transmission electron microscopy and atomically resolved electron energy loss spectroscopy (EELS) studies of electrically stressed devices will then be presented, with a view to understanding the driving forces behind filament formation and dissolution

  16. Effect of texturing on polarization switching dynamics in ferroelectric ceramics

    Science.gov (United States)

    Zhukov, Sergey; Genenko, Yuri A.; Koruza, Jurij; Schultheiß, Jan; von Seggern, Heinz; Sakamoto, Wataru; Ichikawa, Hiroki; Murata, Tatsuro; Hayashi, Koichiro; Yogo, Toshinobu

    2016-01-01

    Highly (100),(001)-oriented (Ba0.85Ca0.15)TiO3 (BCT) lead-free piezoelectric ceramics were fabricated by the reactive templated grain growth method using a mixture of plate-like CaTiO3 and BaTiO3 particles. Piezoelectric properties of the ceramics with a high degree of texture were found to be considerably enhanced compared with the BCT ceramics with a low degree of texture. With increasing the Lotgering factor from 26% up to 94%, the piezoelectric properties develop towards the properties of a single crystal. The dynamics of polarization switching was studied over a broad time domain of 8 orders of magnitude and was found to strongly depend on the degree of orientation of the ceramics. Samples with a high degree of texture exhibited 2-3 orders of magnitude faster polarization switching, as compared with the ones with a low degree of texture. This was rationalized by means of the Inhomogeneous Field Mechanism model as a result of the narrower statistical distribution of the local electric field values in textured media, which promotes a more coherent switching process. The extracted microscopic parameters of switching revealed a decrease of the critical nucleus energy in systems with a high degree of texture providing more favorable switching conditions related to the enhanced ferroelectric properties of the textured material.

  17. Breakdown in ZnO Varistors by High Power Electrical Pulses; TOPICAL

    International Nuclear Information System (INIS)

    PIKE, GORDON E.

    2001-01-01

    This report documents an investigation of irreversible electrical breakdown in ZnO varistors due to short pulses of high electric field and current density. For those varistors that suffer breakdown, there is a monotonic, pulse-by-pulse degradation in the switching electric field. The electrical and structural characteristics of varistors during and after breakdown are described qualitatively and quantitatively. Once breakdown is nucleated, the degradation typically follows a well-defined relationship between the number of post-initiation pulses and the degraded switching voltage. In some cases the degraded varistor has a remnant 20(micro)m diameter hollow track showing strong evidence of once-molten ZnO. A model is developed for both electrical and thermal effects during high energy pulsing. The breakdown is assumed to start at one electrode and advance towards the other electrode as a thin filament of conductive material that grows incrementally with each successive pulse. The model is partially validated by experiments in which the varistor rod is cut at several different lengths from the electrode. Invariably one section of the cut varistor has a switching field that is not degraded while the other section(s) are heavily degraded. Based on the experiments and models of behavior during breakdown, some speculations about the nature of the nucleating mechanism are offered in the last section

  18. Interrogating vertically oriented carbon nanofibers with nanomanipulation for nanoelectromechanical switching applications

    International Nuclear Information System (INIS)

    Kaul, Anupama B.; Megerian, Krikor G.; LeDuc, Henry G.; Epp, Larry; Khan, Abdur R.; Bagge, Leif

    2009-01-01

    We have demonstrated electrostatic switching in vertically oriented carbon nanofibers synthesized on refractory metallic nitride substrates, where pull-in voltages V pi ranged from 10 to 40 V. A nanoprobe was used as the actuating electrode inside a scanning-electron microscope and van der Waals interactions at these length scales appeared significant, suggesting such structures are promising for nonvolatile memory applications. A finite element model was also developed to determine a theoretical V pi and results were compared to experiment. Nanomanipulation tests also revealed tubes synthesized directly on Si by dc plasma-enhanced chemical-vapor deposition with ammonia and acetylene were electrically unsuitable for dc nanoelectromechanical switching applications.

  19. High voltage, high power operation of the plasma erosion opening switch

    International Nuclear Information System (INIS)

    Neri, J.M.; Boller, J.R.; Ottinger, P.F.; Weber, B.V.; Young, F.C.

    1987-01-01

    A Plasma Erosion Opening Switch (PEOS) is used as the opening switch for a vacuum inductive storage system driven by a 1.8-MV, 1.6-TW pulsed power generator. A 135-nH vacuum inductor is current charged to ∼750 kA in 50 ns through the closed PEOS which then opens in <10 ns into an inverse ion diode load. Electrical diagnostics and nuclear activations from ions accelerated in the diode yield a peak load voltage (4.25 MV) and peak load power (2.8 TW) that are 2.4 and 1.8 times greater than ideal matched load values for the same generator pulse

  20. Intrinsic Resistance Switching in Amorphous Silicon Suboxides: The Role of Columnar Microstructure.

    Science.gov (United States)

    Munde, M S; Mehonic, A; Ng, W H; Buckwell, M; Montesi, L; Bosman, M; Shluger, A L; Kenyon, A J

    2017-08-24

    We studied intrinsic resistance switching behaviour in sputter-deposited amorphous silicon suboxide (a-SiO x ) films with varying degrees of roughness at the oxide-electrode interface. By combining electrical probing measurements, atomic force microscopy (AFM), and scanning transmission electron microscopy (STEM), we observe that devices with rougher oxide-electrode interfaces exhibit lower electroforming voltages and more reliable switching behaviour. We show that rougher interfaces are consistent with enhanced columnar microstructure in the oxide layer. Our results suggest that columnar microstructure in the oxide will be a key factor to consider for the optimization of future SiOx-based resistance random access memory.

  1. Graphene and its derivatives: switching ON and OFF.

    Science.gov (United States)

    Chen, Yu; Zhang, Bin; Liu, Gang; Zhuang, Xiaodong; Kang, En-Tang

    2012-07-07

    As the thinnest material ever known in the universe, graphene has been attracting tremendous amount of attention in both materials science and condensed-matter physics since its successful isolation a few years ago. This one-atom-thick two-dimensional pseudo-infinite nano-crystal consists of sp(2)-hybridized aromatic carbon atoms covalently packed into a continuous hexagonal lattice. Graphene exhibits a range of unique properties, viz., high three-dimensional aspect ratio and large specific surface area, superior mechanical stiffness and flexibility, remarkable optical transmittance, extraordinary thermal response and excellent electronic transport properties, promising its applications in the next generation electronics. To switch graphene and its derivatives between ON and OFF states in nanoelectronic memory devices, various techniques have been developed to manipulate the carbon atomic sheets via introducing the valence-conduction bandgap and to enhance their processability. In this article, we review the utilization of electrically, thermally and chemically modified graphene and its polymer-functionalized derivatives for switching and information storage applications. The challenges posed on the development of novel graphene materials and further enhancements of the device switching performance have also been discussed.

  2. 46 CFR 113.35-7 - Electric engine order telegraph systems; operations.

    Science.gov (United States)

    2010-10-01

    ... transmitter handle automatically connects that transmitter electrically to the engineroom indicator and simultaneously disconnects electrically all other transmitters. The reply pointers of all transmitters must... manually operated transfer switch which will disconnect the system in the unattended navigating bridge must...

  3. Some studies on the deformation of the membrane in an RF MEMS switch

    NARCIS (Netherlands)

    Ambati, Vijaya Raghav; Asheim, Andreas; van den Berg, Jan Bouwe; van Gennip, Yves; Gerasimov, Tymofiy; Hlod, Andriy; Planqué, Bob; van der Schans, Martin; van der Stelt, Sjors; Vargas Rivera, Michelangelo; Vondenhoff, Erwin; Bokhove, Onno; Hurink, Johann; Meinsma, Gjerrit; Stolk, Chris; Vellekoop, Michel

    2008-01-01

    Radio Frequency (RF) switches of Micro Electro Mechanical Systems (MEMS) are appealing to the mobile industry because of their energy efficiency and ability to accommodate more frequency bands. However, the electromechanical coupling of the electrical circuit to the mechanical components in RF MEMS

  4. The weak π − π interaction originated resonant tunneling and fast switching in the carbon based electronic devices

    Directory of Open Access Journals (Sweden)

    Jun He

    2012-03-01

    Full Text Available By means of the nonequilibrium Green's functions and the density functional theory, we have investigated the electronic transport properties of C60 based electronic device with different intermolecular interactions. It is found that the electronic transport properties vary with the types of the interaction between two C60 molecules. A fast electrical switching behavior based on negative differential resistance has been found when two molecules are coupled by the weak π − π interaction. Compared to the solid bonding, the weak interaction is found to induce resonant tunneling, which is responsible for the fast response to the applied electric field and hence the velocity of switching.

  5. Simulation and optimization of a polymer directional coupler electro-optic switch with push pull electrodes

    Science.gov (United States)

    Zheng, Chuan-Tao; Ma, Chun-Sheng; Yan, Xin; Wang, Xian-Yin; Zhang, Da-Ming

    2008-07-01

    Structural model and design technique are proposed for a polymer directional coupler electro-optic switch with rib waveguides and push-pull electrodes, of which the electric field distribution is analyzed by the conformal transforming method and image method. In order to get the minimum mode loss and the minimum switching voltage, the parameters of the waveguide and electrode are optimized, such as the core with, core thickness, buffer layer between the core and the electrode, coupling gap between the waveguides, electrode thickness, electrode width and electrode gap. Switching Characteristics are analyzed, which include the output power, insertion loss, and crosstalk. To realize normal switching function, the fabrication error, spectrum shift, and coupling loss between a single mode fiber (SMF) and the waveguide are discussed. Simulation results show that the coupling length is 3082 μm, push-pull switching voltage is 2.14 V, insertion loss is less than 1.17 dB, and crosstalk is less than -30 dB for the designed device.

  6. Breakover mechanism of GaAs photoconductive switch triggering spark gap for high power applications

    Science.gov (United States)

    Tian, Liqiang; Shi, Wei; Feng, Qingqing

    2011-11-01

    A spark gap (SG) triggered by a semi-insulating GaAs photoconductive semiconductor switch (PCSS) is presented. Currents as high as 5.6 kA have been generated using the combined switch, which is excited by a laser pulse with energy of 1.8 mJ and under a bias of 4 kV. Based on the transferred-electron effect and gas streamer theory, the breakover characteristics of the combined switch are analyzed. The photoexcited carrier density in the PCSS is calculated. The calculation and analysis indicate that the PCSS breakover is caused by nucleation of the photoactivated avalanching charge domain. It is shown that the high output current is generated by the discharge of a high-energy gas streamer induced by the strong local electric field distortion or by overvoltage of the SG resulting from quenching of the avalanching domain, and periodic oscillation of the current is caused by interaction between the gas streamer and the charge domain. The cycle of the current oscillation is determined by the rise time of the triggering electric pulse generated by the PCSS, the pulse transmission time between the PCSS and the SG, and the streamer transit time in the SG.

  7. Scenarios for Deep Carbon Emission Reductions from Electricity by 2050 in Western North America using the Switch Electric Power Sector Planning Model: California's Carbon Challenge Phase II, Volume II

    Energy Technology Data Exchange (ETDEWEB)

    Nelson, James; Mileva, Ana; Johnston, Josiah; Kammen, Daniel; Wei, Max; Greenblatt, Jeffrey

    2014-01-01

    This study used a state-of-the-art planning model called SWITCH for the electric power system to investigate the evolution of the power systems of California and western North America from present-day to 2050 in the context of deep decarbonization of the economy. Researchers concluded that drastic power system carbon emission reductions were feasible by 2050 under a wide range of possible futures. The average cost of power in 2050 would range between $149 to $232 per megawatt hour across scenarios, a 21 to 88 percent increase relative to a business-as-usual scenario, and a 38 to 115 percent increase relative to the present-day cost of power. The power system would need to undergo sweeping change to rapidly decarbonize. Between present-day and 2030 the evolution of the Western Electricity Coordinating Council power system was dominated by implementing aggressive energy efficiency measures, installing renewable energy and gas-fired generation facilities and retiring coal-fired generation. Deploying wind, solar and geothermal power in the 2040 timeframe reduced power system emissions by displacing gas-fired generation. This trend continued for wind and solar in the 2050 timeframe but was accompanied by large amounts of new storage and long-distance high-voltage transmission capacity. Electricity storage was used primarily to move solar energy from the daytime into the night to charge electric vehicles and meet demand from electrified heating. Transmission capacity over the California border increased by 40 - 220 percent by 2050, implying that transmission siting, permitting, and regional cooperation will become increasingly important. California remained a net electricity importer in all scenarios investigated. Wind and solar power were key elements in power system decarbonization in 2050 if no new nuclear capacity was built. The amount of installed gas capacity remained relatively constant between present-day and 2050, although carbon capture and sequestration was

  8. Evaluation of DC electric field distribution of PPLP specimen based on the measurement of electrical conductivity in LN2

    Science.gov (United States)

    Hwang, Jae-Sang; Seong, Jae-Kyu; Shin, Woo-Ju; Lee, Jong-Geon; Cho, Jeon-Wook; Ryoo, Hee-Suk; Lee, Bang-Wook

    2013-11-01

    High temperature superconducting (HTS) cable has been paid much attention due to its high efficiency and high current transportation capability, and it is also regarded as eco-friendly power cable for the next generation. Especially for DC HTS cable, it has more sustainable and stable properties compared to AC HTS cable due to the absence of AC loss in DC HTS cable. Recently, DC HTS cable has been investigated competitively all over the world, and one of the key components of DC HTS cable to be developed is a cable joint box considering HVDC environment. In order to achieve the optimum insulation design of the joint box, analysis of DC electric field distribution of the joint box is a fundamental process to develop DC HTS cable. Generally, AC electric field distribution depends on relative permittivity of dielectric materials but in case of DC, electrical conductivity of dielectric material is a dominant factor which determines electric field distribution. In this study, in order to evaluate DC electric field characteristics of the joint box for DC HTS cable, polypropylene laminated paper (PPLP) specimen has been prepared and its DC electric field distribution was analyzed based on the measurement of electrical conductivity of PPLP in liquid nitrogen (LN2). Electrical conductivity of PPLP in LN2 has not been reported yet but it should be measured for DC electric field analysis. The experimental works for measuring electrical conductivity of PPLP in LN2 were presented in this paper. Based on the experimental works, DC electric field distribution of PPLP specimen was fully analyzed considering the steady state and the transient state of DC. Consequently, it was possible to determine the electric field distribution characteristics considering different DC applying stages including DC switching on, DC switching off and polarity reversal conditions.

  9. Electrical contacts principles and applications

    CERN Document Server

    Slade, Paul G

    2013-01-01

    Covering the theory, application, and testing of contact materials, Electrical Contacts: Principles and Applications, Second Edition introduces a thorough discussion on making electric contact and contact interface conduction; presents a general outline of, and measurement techniques for, important corrosion mechanisms; considers the results of contact wear when plug-in connections are made and broken; investigates the effect of thin noble metal plating on electronic connections; and relates crucial considerations for making high- and low-power contact joints. It examines contact use in switch

  10. Fuse Selection for the Two-Stage Explosive Type Switches

    Science.gov (United States)

    Muravlev, I. O.; Surkov, M. A.; Tarasov, E. V.; Uvarov, N. F.

    2017-04-01

    In the two-level explosive switch destruction of a delay happens in the form of electric explosion. Criteria of similarity of electric explosion in transformer oil are defined. The challenge of protecting the power electrical equipment from short circuit currents is still urgent, especially with the growth of unit capacity. Is required to reduce the tripping time as much as possible, and limit the amplitude of the fault current, that is very important for saving of working capacity of life-support systems. This is particularly important when operating in remote stand-alone power supply systems with a high share of renewable energy, working through the inverter transducers, as well as inverter-type diesel generators. The explosive breakers copes well with these requirements. High-speed flow of transformer oil and high pressure provides formation rate of a contact gap of 20 - 100 m/s. In these conditions there is as a rapid increase in voltage on the discontinuity, and recovery of electric strength (Ures) after current interruption.

  11. Meter of dynamics of restoring the electrical strength of spark gaps

    International Nuclear Information System (INIS)

    Kuznetsov, E.A.; Kravchenko, S.A.; Yagnov, V.A.; Shipuk, I.Ya.

    1997-01-01

    Method for diagnostics of the dynamics spark gap electric strength restoration and an electric device for its realization are described. The electric strength measurement error, conditioned by the breakdown current through electric probes or the contacts of a spark gap under investigation, is reduced to minimum due to fast switching off the probe voltage if the breakdown current exceeds some established value (1 mA). 1 ref

  12. Digital switched hydraulics

    Science.gov (United States)

    Pan, Min; Plummer, Andrew

    2018-06-01

    This paper reviews recent developments in digital switched hydraulics particularly the switched inertance hydraulic systems (SIHSs). The performance of SIHSs is presented in brief with a discussion of several possible configurations and control strategies. The soft switching technology and high-speed switching valve design techniques are discussed. Challenges and recommendations are given based on the current research achievements.

  13. Enhancement of resistive switching properties in Al2O3 bilayer-based atomic switches: multilevel resistive switching

    Science.gov (United States)

    Vishwanath, Sujaya Kumar; Woo, Hyunsuk; Jeon, Sanghun

    2018-06-01

    Atomic switches are considered to be building blocks for future non-volatile data storage and internet of things. However, obtaining device structures capable of ultrahigh density data storage, high endurance, and long data retention, and more importantly, understanding the switching mechanisms are still a challenge for atomic switches. Here, we achieved improved resistive switching performance in a bilayer structure containing aluminum oxide, with an oxygen-deficient oxide as the top switching layer and stoichiometric oxide as the bottom switching layer, using atomic layer deposition. This bilayer device showed a high on/off ratio (105) with better endurance (∼2000 cycles) and longer data retention (104 s) than single-oxide layers. In addition, depending on the compliance current, the bilayer device could be operated in four different resistance states. Furthermore, the depth profiles of the hourglass-shaped conductive filament of the bilayer device was observed by conductive atomic force microscopy.

  14. Nonlinear Raman spectroscopy of liquid crystals: orientational alignment and switching behaviour in a ferroelectric liquid crystal mixture

    Science.gov (United States)

    Grofcsik, Andras

    Picosecond inverse Raman spectroscopy has been employed to probe the alignment behaviour and switching characteristics of a 6 mum thick ferroelectric liquid crystal based on a host mixture of fluorinated phenyl biphenylcarboxylates and a chiral dopant. Optical bistability is observed in the Raman signal on application of dc electric fields of opposite polarity. For particular polarities of the applied field, the Raman signals display a cos4theta dependence on the angle of rotation around the beam direction. Reorientational rate constants of 300 mus and 590 mus are observed for the aromatic core at the high-voltage limit for the rise and decay of the 1600 cm-1 Raman signal on application of a switching ac electric field.

  15. Surface-type nonvolatile electric memory elements based on organic-on-organic CuPc-H2Pc heterojunction

    International Nuclear Information System (INIS)

    Karimov, Khasan S.; Muqeet Rehman, M.; Zameer Abbas, S.; Ahmad, Zubair; Touati, Farid; Mahroof-Tahir, M.

    2015-01-01

    A novel surface-type nonvolatile electric memory elements based on organic semiconductors CuPc and H 2 Pc are fabricated by vacuum deposition of the CuPc and H 2 Pc films on preliminary deposited metallic (Ag and Cu) electrodes. The gap between Ag and Cu electrodes is 30–40 μm. For the current–voltage (I–V) characteristics the memory effect, switching effect, and negative differential resistance regions are observed. The switching mechanism is attributed to the electric-field-induced charge transfer. As a result the device switches from a low to a high-conductivity state and then back to a low conductivity state if the opposite polarity voltage is applied. The ratio of resistance at the high resistance state to that at the low resistance state is equal to 120–150. Under the switching condition, the electric current increases ∼ 80–100 times. A comparison between the forward and reverse I–V characteristics shows the presence of rectifying behavior. (paper)

  16. Simulation of Novel NEMS Contact Switch Using MRTD with Alterable Steps

    Directory of Open Access Journals (Sweden)

    Wen-Ge Yu

    2010-01-01

    Full Text Available In order to apply Radio Frequency Micro-nano-Electro-Mechanical System (MEMS/NEMS technologies to produce miniature, high isolation, low insertion loss, good linear characteristic, and low power consumption microwave switches, we present a novel NEMS switch with nanoscaling in this paper through the analysis of electrics and mechanics of the RF switch. The measured data show the pull-in voltage of 24.1 V and the good RF performance of the insertion loss of below −10 dB at 0 GHz on the “on” state, and the isolation of beyond –40 dB at 0–40 GHz on the “off” state, indicating that the witch is suitable for the 0–40 GHz applications. Our analysis shows that the NEMS switch not only can work in wide frequency bands, but also has better isolation performance in lower frequency, thus extending the application to the lower band. The Haar-wavelet-based multiresolution time domain (MRTD with compactly supported scaling function is used for modeling and analyzing the nanomachine switch for the first time. The major advantage of the MRTD algorithms is their capability to develop real-time time and space adaptive grids through the efficient thresholding of the wavelet coefficients. The error between the measured and computed results is below 5%, this indicated that the Haar-wavelet-based multiresolution time domain was suitable for simulating the nano-scaling contact switch.

  17. Intentional preparation of auditory attention-switches: Explicit cueing and sequential switch-predictability.

    Science.gov (United States)

    Seibold, Julia C; Nolden, Sophie; Oberem, Josefa; Fels, Janina; Koch, Iring

    2018-06-01

    In an auditory attention-switching paradigm, participants heard two simultaneously spoken number-words, each presented to one ear, and decided whether the target number was smaller or larger than 5 by pressing a left or right key. An instructional cue in each trial indicated which feature had to be used to identify the target number (e.g., female voice). Auditory attention-switch costs were found when this feature changed compared to when it repeated in two consecutive trials. Earlier studies employing this paradigm showed mixed results when they examined whether such cued auditory attention-switches can be prepared actively during the cue-stimulus interval. This study systematically assessed which preconditions are necessary for the advance preparation of auditory attention-switches. Three experiments were conducted that controlled for cue-repetition benefits, modality switches between cue and stimuli, as well as for predictability of the switch-sequence. Only in the third experiment, in which predictability for an attention-switch was maximal due to a pre-instructed switch-sequence and predictable stimulus onsets, active switch-specific preparation was found. These results suggest that the cognitive system can prepare auditory attention-switches, and this preparation seems to be triggered primarily by the memorised switching-sequence and valid expectations about the time of target onset.

  18. Fast magnetization switching in GaMnAs induced by electrical fields

    Czech Academy of Sciences Publication Activity Database

    Balestriere, P.; Devolder, T.; Kim, J.-V.; Lecoeur, P.; Wunderlich, Joerg; Novák, Vít; Jungwirth, Tomáš; Chappert, C.

    2011-01-01

    Roč. 99, č. 24 (2011), 242505/1-242505/3 ISSN 0003-6951 R&D Projects: GA MŠk LC510; GA MŠk(CZ) 7E08087 EU Projects: European Commission(XE) 214499 - NAMASTE; European Commission(XE) 268066 - 0MSPIN Grant - others:AV ČR(CZ) AP0801 Program:Akademická prémie - Praemium Academiae Institutional research plan: CEZ:AV0Z10100521 Keywords : magnet ization switching * ferromagnetic semiconductors Subject RIV: BM - Solid Matter Physics ; Magnet ism Impact factor: 3.844, year: 2011

  19. Electric ignition energy evaluation and the energy distribution structure of energy released in electrostatic discharge process

    International Nuclear Information System (INIS)

    Liu Qingming; Huang Jinxiang; Shao Huige; Zhang Yunming

    2017-01-01

    Ignition energy is one of the important parameters of flammable materials, and evaluating ignition energy precisely is essential to the safety of process industry and combustion science and technology. By using electric spark discharge test system, a series of electric spark discharge experiments were conducted with the capacitor-stored energy in the range of 10 J, 100 J, and 1000 J, respectively. The evaluation method for energy consumed by electric spark, wire, and switch during capacitor discharge process has been studied respectively. The resistance of wire, switch, and plasma between electrodes has been evaluated by different methods and an optimized evaluation method has been obtained. The electric energy consumed by wire, electric switch, and electric spark-induced plasma between electrodes were obtained and the energy structure of capacitor-released energy was analyzed. The dynamic process and the characteristic parameters (the maximum power, duration of discharge process) of electric spark discharge process have been analyzed. Experimental results showed that, electric spark-consumed energy only accounts for 8%–14% of the capacitor-released energy. With the increase of capacitor-released energy, the duration of discharge process becomes longer, and the energy of plasma accounts for more in the capacitor-released energy. The power of electric spark varies with time as a damped sinusoids function and the period and the maximum value increase with the capacitor-released energy. (paper)

  20. Design and finite element method analysis of laterally actuated multi-value nano electromechanical switches

    KAUST Repository

    Kloub, Hussam; Smith, Casey; Hussain, Muhammad Mustafa

    2011-01-01

    We report on the design and modeling of novel nano electromechanical switches suitable for implementing reset/set flip-flops, AND, NOR, and XNOR Boolean functions. Multiple logic operations can be implemented using only one switching action enabling parallel data processing; a feature that renders this design competitive with complementary metal oxide semiconductor and superior to conventional nano-electromechanical switches in terms of functionality per device footprint. The structural architecture of the newly designed switch consists of a pinned flexural beam structure which allows low strain lateral actuation for enhanced mechanical integrity. Reliable control of on-state electrical current density is achieved through the use of metal-metal contacts, true parallel beam deflection, and lithographically defined contact area to prevent possible device welding. Dynamic response as a function of device dimensions numerically investigated using ANSYS and MatLab Simulink. © 2011 The Japan Society of Applied Physics.

  1. Design and finite element method analysis of laterally actuated multi-value nano electromechanical switches

    KAUST Repository

    Kloub, Hussam

    2011-09-01

    We report on the design and modeling of novel nano electromechanical switches suitable for implementing reset/set flip-flops, AND, NOR, and XNOR Boolean functions. Multiple logic operations can be implemented using only one switching action enabling parallel data processing; a feature that renders this design competitive with complementary metal oxide semiconductor and superior to conventional nano-electromechanical switches in terms of functionality per device footprint. The structural architecture of the newly designed switch consists of a pinned flexural beam structure which allows low strain lateral actuation for enhanced mechanical integrity. Reliable control of on-state electrical current density is achieved through the use of metal-metal contacts, true parallel beam deflection, and lithographically defined contact area to prevent possible device welding. Dynamic response as a function of device dimensions numerically investigated using ANSYS and MatLab Simulink. © 2011 The Japan Society of Applied Physics.

  2. Current-Driven Switch-Mode Audio Power Amplifiers

    DEFF Research Database (Denmark)

    Knott, Arnold; Buhl, Niels Christian; Andersen, Michael A. E.

    2012-01-01

    The conversion of electrical energy into sound waves by electromechanical transducers is proportional to the current through the coil of the transducer. However virtually all audio power amplifiers provide a controlled voltage through the interface to the transducer. This paper is presenting...... a switch-mode audio power amplifier not only providing controlled current but also being supplied by current. This results in an output filter size reduction by a factor of 6. The implemented prototype shows decent audio performance with THD + N below 0.1 %....

  3. Switching Device Dead Time Optimization of Resonant Double-Sided LCC Wireless Charging System for Electric Vehicles

    Directory of Open Access Journals (Sweden)

    Xi Zhang

    2017-11-01

    Full Text Available Aiming at the reduction of the influence of the dead time setting on power level and efficiency of the inverter of double-sided LCC resonant wireless power transfer (WPT system, a dead time soft switching optimization method for metal–oxide–semiconductor field-effect transistor (MOSFET is proposed. At first, the mathematic description of double-sided LCC resonant wireless charging system is established, and the operating mode is analyzed as well, deducing the quantitative characteristic that the secondary side compensation capacitor C2 can be adjusted to ensure that the circuit is inductive. A dead time optimization design method is proposed, contributing to achieving zero-voltage switching (ZVS of the inverter, which is closely related to the performance of the WPT system. In the end, a prototype is built. The experimental results verify that dead time calculated by this optimized method can ensure the soft switching of the inverter MOSFET and promote the power and efficiency of the WPT.

  4. Investigation of the electroforming and resistive switching mechanisms in Fe-doped SrTiO{sub 3} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Menke, Tobias

    2009-11-27

    To overcome the physical limits of todays memory technologies new concepts are needed. The resistive random access memory (RRAM), which bases on a nonvolatile and repeatable change of the resistance by external electrical stimuli, seems to be one promising candidate. Within the scope of this work, the model system Strontium titanate (SrTiO{sub 3}) has been investigated to get a deeper understanding of the underlying physical mechanism related to the resistance change. The electrical properties of SrTiO{sub 3} (STO) can be modulated from a band insulator to metallic conduction by a self-doping with oxygen vacancies which act as shallow donors. A local accumulation or depletion of oxygen vacancies at the vicinity of the surface will lead to a local redox process which is responsible for the resistance change. To study the influence of the interfaces on the switching properties of SrTiO{sub 3} thin films, epitaxial films of Fe-doped SrTiO{sub 3} were grown on different bottom electrodes (SrRuO{sub 3}, LaNiO{sub 3} und Nb:STO) by a ''Pulsed Laser Deposition'' technique. An atomic force microscope equipped with a conductive tip (LC-AFM) allowed studying the conductivity of the deposited films on the nanometer scale. Resistive switching of lateral structures smaller than {proportional_to}5 nm could be realized which represents the potential of this material for a further downscaling of RRAM devices. The deposition of top electrodes, made of Platinum or Titanium, allowed the electrical characterization of metal-insulator-metal (MIM) structures. An extensive investigation of pristine MIM-devices by impedance spectroscopy showed the big impact of the metal-insulator interface on the overall device resistance. Furthermore, a chemical polarization was studied by dynamical current sweeps and identified as a volatile resistance variation. Usually a forming procedure is needed to ''enable'' the resistive switching properties in MIM devices

  5. Leaking electricity in domestic appliances

    International Nuclear Information System (INIS)

    Meier, Alan; Rosen, Karen

    1999-01-01

    Many types of home electronic equipment draw electric power when switched off or not performing their principal functions. Standby power use (or ''leaking electricity'') for most appliances ranges from 1 - 20 watts. Even though standby use of each device is small, the combined standby power use of all appliances in a home can easily exceed 50 watts. Leaking electricity is already responsible for 5 to 10 percent of residential electricity use in the United States and over 10 percent in Japan. An increasing number of white goods also have standby power requirements. There is a growing international effort to limit standby power to around one watt per device. New and existing technologies are available to meet this target at little or no extra cost

  6. Electro-optical switching of liquid crystals of graphene oxide

    Science.gov (United States)

    Song, Jang-Kun

    Electric field effects on aqueous graphene-oxide (GO) dispersions are reviewed in this chapter. In isotropic and biphasic regimes of GO dispersions, in which the inter-particle friction is low, GO particles sensitively respond to the application of electric field, producing field-induced optical birefringence. The electro-optical sensitivity dramatically decreases as the phase transits to the nematic phase; the increasing inter-particle friction hinders the rotational switching of GO particles. The corresponding Kerr coefficient reaches the maximum near the isotropic to biphasic transition concentration, at which the Kerr coefficient is found be c.a. 1:8 · 10-5 mV-2, the highest value ever reported in all Kerr materials. The exceptionally large Kerr effect arises from the Maxwell- Wagner polarization of GO particles with an extremely large aspect ratio and a thick electrical double layer (EDL). The polarization sensitively depends on the ratio of surface and bulk conductivities in dispersions. As a result, low ion concentration in bulk solvent is highly required to achieve a quality electro-optical switching in GO dispersions. Spontaneous vinylogous carboxylic reaction in GO particles produces H+ ions, resulting in spontaneous degradation of electro-optical response with time, hence the removal of residual ions by using a centrifuge cleaning process significantly improves the electro-optical sensitivity. GO particle size is another important parameter for the Kerr coefficient and the response time. The best performance is observed in a GO dispersion with c.a. 0.5 μm mean size. Dielectrophoretic migration of GO particles can be also used to manipulate GO particles in solution. Using these unique features of GO dispersions, one can fabricate GO liquid crystal devices similar to conventional liquid crystal displays; the large Kerr effect allows fabricating a low power device working at extremely low electric fields.

  7. Demonstration of Ultra-Fast Switching in Nano metallic Resistive Switching Memory Devices

    International Nuclear Information System (INIS)

    Yang, Y.

    2016-01-01

    Interdependency of switching voltage and time creates a dilemma/obstacle for most resistive switching memories, which indicates low switching voltage and ultra-fast switching time cannot be simultaneously achieved. In this paper, an ultra-fast (sub-100 ns) yet low switching voltage resistive switching memory device (“nano metallic ReRAM”) was demonstrated. Experimental switching voltage is found independent of pulse width (intrinsic device property) when the pulse is long but shows abrupt time dependence (“cliff”) as pulse width approaches characteristic RC time of memory device (extrinsic device property). Both experiment and simulation show that the onset of cliff behavior is dependent on physical device size and parasitic resistance, which is expected to diminish as technology nodes shrink down. We believe this study provides solid evidence that nano metallic resistive switching memory can be reliably operated at low voltage and ultra-fast regime, thus beneficial to future memory technology.

  8. Polarization switching and patterning in self-assembled peptide tubular structures

    Science.gov (United States)

    Bdikin, Igor; Bystrov, Vladimir; Delgadillo, Ivonne; Gracio, José; Kopyl, Svitlana; Wojtas, Maciej; Mishina, Elena; Sigov, Alexander; Kholkin, Andrei L.

    2012-04-01

    Self-assembled peptide nanotubes are unique nanoscale objects that have great potential for a multitude of applications, including biosensors, nanotemplates, tissue engineering, biosurfactants, etc. The discovery of strong piezoactivity and polar properties in aromatic dipeptides [A. Kholkin, N. Amdursky, I. Bdikin, E. Gazit, and G. Rosenman, ACS Nano 4, 610 (2010)] opened up a new perspective for their use as biocompatible nanoactuators, nanomotors, and molecular machines. Another, as yet unexplored functional property is the ability to switch polarization and create artificial polarization patterns useful in various electronic and optical applications. In this work, we demonstrate that diphenylalanine peptide nanotubes are indeed electrically switchable if annealed at a temperature of about 150 °C. The new orthorhombic antipolar structure that appears after annealing allows for the existence of a radial polarization component, which is directly probed by piezoresponse force microscopy (PFM) measurements. Observation of the relatively stable polarization patterns and hysteresis loops via PFM testifies to the local reorientation of molecular dipoles in the radial direction. The experimental results are complemented with rigorous molecular calculations and create a solid background of electric-field induced deformation of aromatic rings and corresponding polarization switching in this emergent material.

  9. Tunable resistive switching behaviour in ferroelectric–ZnO bilayer films

    International Nuclear Information System (INIS)

    Zhou Mingxiu; Li Ziwei; Chen Bo; Wan Jianguo; Liu Junming

    2013-01-01

    Pb(Zr 0.52 Ti 0.48 )O 3 /ZnO bilayer films with various ZnO-layer thicknesses were prepared by a sol–gel process, and their phase structures, electric conduction and polarization behaviour were measured. The results showed that the preferential crystal orientation of the ZnO layer changed with a change in its thickness. The strong dependence of both asymmetric current–voltage and polarization–voltage characteristics on the ZnO-layer thickness was observed. The resistance ratio of the high-resistance state (HRS) to the low-resistance state (LRS) increased with increasing ZnO-layer thickness, and a high rectification ratio was obtained in the bilayer film with an optimized ZnO-layer thickness. The combined effects of interface polarization coupling and energy band structure on the resistive switching behaviour of the bilayer films were revealed, and the electric conduction mechanisms of the bilayer films at both HRS and LRS were analysed in detail. This work presents an effective method to modulate the resistive switching behaviour of ferroelectric–ZnO heterostructures, which is significant in designing high-performance ferroelectric–semiconductor heterostructures for actual applications. (paper)

  10. On-Demand Final State Control of a Surface-Bound Bistable Single Molecule Switch.

    Science.gov (United States)

    Garrido Torres, José A; Simpson, Grant J; Adams, Christopher J; Früchtl, Herbert A; Schaub, Renald

    2018-04-12

    Modern electronic devices perform their defined action because of the complete reliability of their individual active components (transistors, switches, diodes, and so forth). For instance, to encode basic computer units (bits) an electrical switch can be used. The reliability of the switch ensures that the desired outcome (the component's final state, 0 or 1) can be selected with certainty. No practical data storage device would otherwise exist. This reliability criterion will necessarily need to hold true for future molecular electronics to have the opportunity to emerge as a viable miniaturization alternative to our current silicon-based technology. Molecular electronics target the use of single-molecules to perform the actions of individual electronic components. On-demand final state control over a bistable unimolecular component has therefore been one of the main challenges in the past decade (1-5) but has yet to be achieved. In this Letter, we demonstrate how control of the final state of a surface-supported bistable single molecule switch can be realized. On the basis of the observations and deductions presented here, we further suggest an alternative strategy to achieve final state control in unimolecular bistable switches.

  11. Resistive switching characteristics of interfacial phase-change memory at elevated temperature

    Science.gov (United States)

    Mitrofanov, Kirill V.; Saito, Yuta; Miyata, Noriyuki; Fons, Paul; Kolobov, Alexander V.; Tominaga, Junji

    2018-04-01

    Interfacial phase-change memory (iPCM) devices were fabricated using W and TiN for the bottom and top contacts, respectively, and the effect of operation temperature on the resistive switching was examined over the range between room temperature and 200 °C. It was found that the high-resistance (RESET) state in an iPCM device drops sharply at around 150 °C to a low-resistance (SET) state, which differs by ˜400 Ω from the SET state obtained by electric-field-induced switching. The iPCM device SET state resistance recovered during the cooling process and remained at nearly the same value for the RESET state. These resistance characteristics greatly differ from those of the conventional Ge-Sb-Te (GST) alloy phase-change memory device, underscoring the fundamentally different switching nature of iPCM devices. From the thermal stability measurements of iPCM devices, their optimal temperature operation was concluded to be less than 100 °C.

  12. Fuselage panel noise attenuation by piezoelectric switching control

    International Nuclear Information System (INIS)

    Makihara, Kanjuro; Onoda, Junjiro; Minesugi, Kenji; Miyakawa, Takeya

    2010-01-01

    This paper describes a problem that we encountered in our noise attenuation project and our solution for it. We intend to attenuate low-frequency noise that transmits through aircraft fuselage panels. Our method of noise attenuation is implemented with a piezoelectric semi-active system having a selective switch instead of an active energy-supply system. The semi-active controller is based on the predicted sound pressure distribution obtained from acoustic emission analysis. Experiments and numerical simulations demonstrate that the semi-active method attenuates acoustic levels of not only the simple monochromatic noise but also of broadband noise. We reveal that tuning the electrical parameters in the circuit is the key to effective noise attenuation, to overcome the acoustic excitation problem due to sharp switching actions, as well as to control chattering problems. The results obtained from this investigation provide meaningful insights into designing noise attenuation systems for comfortable aircraft cabin environments

  13. Mechanism of polarization switching in wurtzite-structured zinc oxide thin films

    Science.gov (United States)

    Konishi, Ayako; Ogawa, Takafumi; Fisher, Craig A. J.; Kuwabara, Akihide; Shimizu, Takao; Yasui, Shintaro; Itoh, Mitsuru; Moriwake, Hiroki

    2016-09-01

    The properties of a potentially new class of ferroelectric materials based on wurtzite-structured ZnO thin films are examined using the first-principles calculations. Theoretical P-E hysteresis loops were calculated using the fixed-D method for both unstrained and (biaxially) strained single crystals. Ferroelectric polarization switching in ZnO (S.G. P63mc) is shown to occur via an intermediate non-polar structure with centrosymmetric P63/mmc symmetry by displacement of cations relative to anions in the long-axis direction. The calculated coercive electric field (Ec) for polarization switching was estimated to be 7.2 MV/cm for defect-free monocrystalline ZnO. During switching, the short- and long-axis lattice parameters expand and contract, respectively. The large structural distortion required for switching may explain why ferroelectricity in this compound has not been reported experimentally for pure ZnO. Applying an epitaxial tensile strain parallel to the basal plane is shown to be effective in lowering Ec during polarization, with a 5% biaxial expansion resulting in a decrease of Ec to 3.5 MV/cm. Comparison with calculated values for conventional ferroelectric materials suggests that the ferroelectric polarization switching of wurtzite-structured ZnO may be achievable by preparing high-quality ZnO thin films with suitable strain levels and low defect concentrations.

  14. Particle creation from the vacuum by an exponentially decreasing electric field

    International Nuclear Information System (INIS)

    Adorno, T C; Gavrilov, S P; Gitman, D M

    2015-01-01

    We analyze in detail the creation of fermions and bosons from a vacuum by an electric field that exponentialy decreases in time. In our calculations, we use quantum electrodynamics (QED) and mainly consider the particle creation effect in a homogeneous electric field. To this end, we find complete sets of exact solutions of the d-dimensional Dirac equation in the exponentially decreasing electric field, and we use them to calculate all the characteristics of the effect, and specifically the total number of created particles and the probability that a vacuum will remain a vacuum. Note that the latter quantities were derived in the case under consideration for the first time. All possible asymptotic regimes are discussed in detail. In addition, switching on and switching off effects are studied. (paper)

  15. IMPULSE CONTROL HYBRID ELECTRICAL SYSTEM

    Directory of Open Access Journals (Sweden)

    A. A. Lobaty

    2016-01-01

    Full Text Available This paper extends the recently introduced approach for modeling and solving the optimal control problem of fixedswitched mode DC-DC power converter. DCDC converters are a class of electric power circuits that used extensively in regulated DC power supplies, DC motor drives of different types, in Photovoltaic Station energy conversion and other applications due to its advantageous features in terms of size, weight and reliable performance. The main problem in controlling this type converters is in their hybrid nature as the switched circuit topology entails different modes of operation, each of it with its own associated linear continuous-time dynamics.This paper analyses the modeling and controller synthesis of the fixed-frequency buck DC-DC converter, in which the transistor switch is operated by a pulse sequence with constant frequency. In this case the regulation of the DC component of the output voltage is via the duty cycle. The optimization of the control system is based on the formation of the control signal at the output.It is proposed to solve the problem of optimal control of a hybrid system based on the formation of the control signal at the output of the controller, which minimizes a given functional integral quality, which is regarded as a linear quadratic Letov-Kalman functional. Search method of optimal control depends on the type of mathematical model of control object. In this case, we consider a linear deterministic model of the control system, which is common for the majority of hybrid electrical systems. For this formulation of the optimal control problem of search is a problem of analytical design of optimal controller, which has the analytical solution.As an example of the hybrid system is considered a step-down switching DC-DC converter, which is widely used in various electrical systems: as an uninterruptible power supply, battery charger for electric vehicles, the inverter in solar photovoltaic power plants.. A

  16. Magnetoresistance engineering and singlet/triplet switching in InAs nanowire quantum dots with ferromagnetic sidegates

    Science.gov (United States)

    Fábián, G.; Makk, P.; Madsen, M. H.; Nygârd, J.; Schönenberger, C.; Baumgartner, A.

    2016-11-01

    We present magnetoresistance (MR) experiments on an InAs nanowire quantum dot device with two ferromagnetic sidegates (FSGs) in a split-gate geometry. The wire segment can be electrically tuned to a single dot or to a double dot regime using the FSGs and a backgate. In both regimes we find a strong MR and a sharp MR switching of up to 25% at the field at which the magnetizations of the FSGs are inverted by the external field. The sign and amplitude of the MR and the MR switching can both be tuned electrically by the FSGs. In a double dot regime close to pinch-off we find two sharp transitions in the conductance, reminiscent of tunneling MR (TMR) between two ferromagnetic contacts, with one transition near zero and one at the FSG switching fields. These surprisingly rich characteristics we explain in several simple resonant tunneling models. For example, the TMR-like MR can be understood as a stray-field controlled transitions between singlet and triplet double dot states. Such local magnetic fields are the key elements in various proposals to engineer novel states of matter and may be used for testing electron spin based Bell inequalities.

  17. Digital to analog resistive switching transition induced by graphene buffer layer in strontium titanate based devices.

    Science.gov (United States)

    Wan, Tao; Qu, Bo; Du, Haiwei; Lin, Xi; Lin, Qianru; Wang, Da-Wei; Cazorla, Claudio; Li, Sean; Liu, Sidong; Chu, Dewei

    2018-02-15

    Resistive switching behaviour can be classified into digital and analog switching based on its abrupt and gradual resistance change characteristics. Realizing the transition from digital to analog switching in the same device is essential for understanding and controlling the performance of the devices with various switching mechanisms. Here, we investigate the resistive switching in a device made with strontium titanate (SrTiO 3 ) nanoparticles using X-ray diffractometry, scanning electron microscopy, Raman spectroscopy, and direct electrical measurements. It is found that the well-known rupture/formation of Ag filaments is responsible for the digital switching in the device with Ag as the top electrode. To modulate the switching performance, we insert a reduced graphene oxide layer between SrTiO 3 and the bottom FTO electrode owing to its good barrier property for the diffusion of Ag ions and high out-of-plane resistance. In this case, resistive switching is changed from digital to analog as determined by the modulation of interfacial resistance under applied voltage. Based on that controllable resistance, potentiation and depression behaviours are implemented as well. This study opens up new ways for the design of multifunctional devices which are promising for memory and neuromorphic computing applications. Copyright © 2017 Elsevier Inc. All rights reserved.

  18. Free microparticles—An inducing mechanism of pre-firing in high pressure gas switches for fast linear transformer drivers

    Science.gov (United States)

    Li, Xiaoang; Pei, Zhehao; Wu, Zhicheng; Zhang, Yuzhao; Liu, Xuandong; Li, Yongdong; Zhang, Qiaogen

    2018-03-01

    Microparticle initiated pre-firing of high pressure gas switches for fast linear transformer drivers (FLTDs) is experimentally and theoretically verified. First, a dual-electrode gas switch equipped with poly-methyl methacrylate baffles is used to capture and collect the microparticles. By analyzing the electrode surfaces and the collecting baffles by a laser scanning confocal microscope, microparticles ranging in size from tens of micrometers to over 100 μm are observed under the typical working conditions of FLTDs. The charging and movement of free microparticles in switch cavity are studied, and the strong DC electric field drives the microparticles to bounce off the electrode. Three different modes of free microparticle motion appear to be responsible for switch pre-firing. (i) Microparticles adhere to the electrode surface and act as a fixed protrusion which distorts the local electric field and initiates the breakdown in the gap. (ii) One particle escapes toward the opposite electrode and causes a near-electrode microdischarge, inducing the breakdown of the residual gap. (iii) Multiple moving microparticles are occasionally in cascade, leading to pre-firing. Finally, as experimental verification, repetitive discharges at ±90 kV are conducted in a three-electrode field-distortion gas switch, with two 8 mm gaps and pressurized with nitrogen. An ultrasonic probe is employed to monitor the bounce signals. In pre-firing incidents, the bounce is detected shortly before the collapse of the voltage waveform, which demonstrates that free microparticles contribute significantly to the mechanism that induces pre-firing in FLTD gas switches.

  19. Free microparticles-An inducing mechanism of pre-firing in high pressure gas switches for fast linear transformer drivers.

    Science.gov (United States)

    Li, Xiaoang; Pei, Zhehao; Wu, Zhicheng; Zhang, Yuzhao; Liu, Xuandong; Li, Yongdong; Zhang, Qiaogen

    2018-03-01

    Microparticle initiated pre-firing of high pressure gas switches for fast linear transformer drivers (FLTDs) is experimentally and theoretically verified. First, a dual-electrode gas switch equipped with poly-methyl methacrylate baffles is used to capture and collect the microparticles. By analyzing the electrode surfaces and the collecting baffles by a laser scanning confocal microscope, microparticles ranging in size from tens of micrometers to over 100 μm are observed under the typical working conditions of FLTDs. The charging and movement of free microparticles in switch cavity are studied, and the strong DC electric field drives the microparticles to bounce off the electrode. Three different modes of free microparticle motion appear to be responsible for switch pre-firing. (i) Microparticles adhere to the electrode surface and act as a fixed protrusion which distorts the local electric field and initiates the breakdown in the gap. (ii) One particle escapes toward the opposite electrode and causes a near-electrode microdischarge, inducing the breakdown of the residual gap. (iii) Multiple moving microparticles are occasionally in cascade, leading to pre-firing. Finally, as experimental verification, repetitive discharges at ±90 kV are conducted in a three-electrode field-distortion gas switch, with two 8 mm gaps and pressurized with nitrogen. An ultrasonic probe is employed to monitor the bounce signals. In pre-firing incidents, the bounce is detected shortly before the collapse of the voltage waveform, which demonstrates that free microparticles contribute significantly to the mechanism that induces pre-firing in FLTD gas switches.

  20. The development of high-voltage repetitive low-jitter corona stabilized triggered switch

    Science.gov (United States)

    Geng, Jiuyuan; Yang, Jianhua; Cheng, Xinbing; Yang, Xiao; Chen, Rong

    2018-04-01

    The high-power switch plays an important part in a pulse power system. With the trend of pulse power technology toward modularization, miniaturization, and accuracy control, higher requirements on electrical trigger and jitter of the switch have been put forward. A high-power low-jitter corona-stabilized triggered switch (CSTS) is designed in this paper. This kind of CSTS is based on corona stabilized mechanism, and it can be used as a main switch of an intense electron-beam accelerator (IEBA). Its main feature was the use of an annular trigger electrode instead of a traditional needle-like trigger electrode, taking main and side trigger rings to fix the discharging channels and using SF6/N2 gas mixture as its operation gas. In this paper, the strength of the local field enhancement was changed by a trigger electrode protrusion length Dp. The differences of self-breakdown voltage and its stability, delay time jitter, trigger requirements, and operation range of the switch were compared. Then the effect of different SF6/N2 mixture ratio on switch performance was explored. The experimental results show that when the SF6 is 15% with the pressure of 0.2 MPa, the hold-off voltage of the switch is 551 kV, the operating range is 46.4%-93.5% of the self-breakdown voltage, the jitter is 0.57 ns, and the minimum trigger voltage requirement is 55.8% of the peak. At present, the CSTS has been successfully applied to an IEBA for long time operation.

  1. DESAIN DAN IMPLEMENTSI SOFT SWITCHING BOOST KONVERTER DENGAN SIMPLE AUXILLARY RESONANT SWITCH (SARC

    Directory of Open Access Journals (Sweden)

    Dimas Bagus Saputra

    2017-01-01

    Full Text Available Boost konverter merupakan penaik tegangan DC ke tegangan DC yang mempunyai tegangan output yang lebih tinggi dibanding inputnya. Penggunaan boost konverter diera modern semakin meningkat dan dibuat dengan dimensi yang lebih kecil, berat yang lebih ringan dan efisiensi yang lebih tinggi dibanding dengan boost konverter generasi terdahulu. Tetapi rugi-rugi periodik saat on/off meningkat. Untuk meraih kriteria tersebut, teknik hard switching boost konverter berevolusi menjadi teknik soft switching dengan menambah rangkaian simple auxiliary resonant circuit (SARC. Karena penambahan rangkaian SARC tersebut konverter bekerja pada kondisi zero-voltage switching switch (ZVS dan zero current switch (ZCS, sehingga saklar semikonduktor tidak bekerja secara hard switching lagi. Pada penelitian ini akan di desain dan diimplementaskan soft switching boost konverter dengan SARC. Kelebihan dari soft switching boost konverter dengan SARC adalah mempunyai efisiensi yang lebih tinggi dibanding dengan boost konverter konventional. Dari hasil implementasi menunjukkan konverter yang diajukan telah meraih zero voltage switch (ZVS. Sehingga boost konverter zero voltage switch (ZVS bisa diaplikasikan pada sistem power suplay yang membutuhkan efisiensi energi yang tinggi terutama pada daya yang tinggi.

  2. Stable switching of resistive random access memory on the nanotip array electrodes

    KAUST Repository

    Tsai, Kun-Tong

    2016-09-13

    The formation/rupture of conducting filaments (CFs) in resistive random access memory (ReRAM) materials tune the electrical conductivities non-volatilely and are largely affected by its material composition [1], internal configurations [2] and external environments [3,4]. Therefore, controlling repetitive formation/rupture of CF as well as the spatial uniformity of formed CF are fundamentally important for improving the resistive switching (RS) performance. In this context, we have shown that by adding a field initiator, typically a textured electrode, both performance and switching uniformity of ReRAMs can be improved dramatically [5]. In addition, despite its promising characteristics, the scalable fabrication and structural homogeneity of such nanostructured electrodes are still lacking or unattainable, making miniaturization of ReRAM devices an exceeding challenge. Here, we employ nanostructured electrode (nanotip arrays, extremely uniform) formed spontaneously via a self-organized process to improve the ZnO ReRAM switching characteristics.

  3. 3-5 modulation and switching devices for optical systems applications

    Science.gov (United States)

    Singh, Jasprit; Bhattacharya, Pallab

    1995-04-01

    The thrust for this three year program has been to develop novel devices and systems applications for multiple quantum well based devices. We have investigated architectures based upon the quantum confined Stark effect (QCSE), a means by which excitonic resonances in a quantum well are electric field tuned to shift the peaked absorption spectrum of the material. The devices based upon this concept have been used, in the past, to realize switching structures employing the characteristic negative differential resistance available in PIN-MQW diodes under illumination. We have focuses, primarily on three schemes based upon the QCSE, to extend the utility of quantum well based devices. Firstly, we have developed, tested and optimized a novel tunable optical filter for wavelength selective applications. Secondly, we have demonstrated an MQW based scheme for optical pattern recognition which we have applied towards header recognition in a packet switching network environment. Thirdly, we have extended previous MQW based switching schemes to implement an optical read only memory (ROM) which can store two bits of information on a single sight, read by two different probe wavelengths of light.

  4. Research Update: Molecular electronics: The single-molecule switch and transistor

    Directory of Open Access Journals (Sweden)

    Kai Sotthewes

    2014-01-01

    Full Text Available In order to design and realize single-molecule devices it is essential to have a good understanding of the properties of an individual molecule. For electronic applications, the most important property of a molecule is its conductance. Here we show how a single octanethiol molecule can be connected to macroscopic leads and how the transport properties of the molecule can be measured. Based on this knowledge we have realized two single-molecule devices: a molecular switch and a molecular transistor. The switch can be opened and closed at will by carefully adjusting the separation between the electrical contacts and the voltage drop across the contacts. This single-molecular switch operates in a broad temperature range from cryogenic temperatures all the way up to room temperature. Via mechanical gating, i.e., compressing or stretching of the octanethiol molecule, by varying the contact's interspace, we are able to systematically adjust the conductance of the electrode-octanethiol-electrode junction. This two-terminal single-molecule transistor is very robust, but the amplification factor is rather limited.

  5. MATHEMATIC SIMULATION OF TRANSIENT PROCESS IN A. C – SYSTEM “ELECTRIC – TRACTION – NETWORK – LOCOMOTIVE” 2. SWITCH ON THE MAIN LOCOMOTIVE’S POWER CONVERTER IN “FREE PAY” MODE; DEFINITION AND ANALYSIS CURRENT SURGE OF MAGNETIZATION

    Directory of Open Access Journals (Sweden)

    T. M. Mischenko

    2010-12-01

    Full Text Available The article is a continuation of analysis of mathematical models for AC systems, in which the elements of electric-traction network and switch-on of power transformer in an idling mode are gradually connected. The numerical calculations and analysis of current of transformer magnetization are executed.

  6. Fully integrated graphene electronic biosensor for label-free detection of lead (II) ion based on G-quadruplex structure-switching.

    Science.gov (United States)

    Li, Yijun; Wang, Cheng; Zhu, Yibo; Zhou, Xiaohong; Xiang, Yu; He, Miao; Zeng, Siyu

    2017-03-15

    This work presents a fully integrated graphene field-effect transistor (GFET) biosensor for the label-free detection of lead ions (Pb 2+ ) in aqueous-media, which first implements the G-quadruplex structure-switching biosensing principle in graphene nanoelectronics. We experimentally illustrate the biomolecular interplay that G-rich DNA single-strands with one-end confined on graphene surface can specifically interact with Pb 2+ ions and switch into G-quadruplex structures. Since the structure-switching of electrically charged DNA strands can disrupt the charge distribution in the vicinity of graphene surface, the carrier equilibrium in graphene sheet might be altered, and manifested by the conductivity variation of GFET. The experimental data and theoretical analysis show that our devices are capable of the label-free and specific quantification of Pb 2+ with a detection limit down to 163.7ng/L. These results first verify the signaling principle competency of G-quadruplex structure-switching in graphene electronic biosensors. Combining with the advantages of the compact device structure and convenient electrical signal, a label-free GFET biosensor for Pb 2+ monitoring is enabled with promising application potential. Copyright © 2016 Elsevier B.V. All rights reserved.

  7. Influence of Different Rotor Teeth Shapes on the Performance of Flux Switching Permanent Magnet Machines Used for Electric Vehicles

    Directory of Open Access Journals (Sweden)

    Jing Zhao

    2014-12-01

    Full Text Available This paper investigated a 12-slot/11-pole flux switching permanent magnet (FSPM machine used for electric vehicles (EVs. Five novel rotor teeth shapes are proposed and researched to reduce the cogging torque and torque ripple of the FSPM machine. These rotor teeth shapes are notched teeth, stepped teeth, eccentric teeth, combination of notched and stepped teeth, and combination of notched and eccentric teeth. They are applied on the rotor and optimized, respectively. The influences of different rotor teeth shapes on cogging torque, torque ripple and electromagnetic torque are analyzed by the 2-D finite-element method (FEM. Then, the performance of FSPMs with different rotor teeth shapes are compared and evaluated comprehensively from the points of view of cogging torque, torque ripple, electromagnetic torque, flux linkage, back electromotive force (EMF, and so on. The results show that the presented rotor teeth shapes, especially the combination of stepped and notched teeth, can greatly reduce the cogging torque and torque ripple with only slight changes in the average electromagnetic torque.

  8. Saturated Switching Systems

    CERN Document Server

    Benzaouia, Abdellah

    2012-01-01

    Saturated Switching Systems treats the problem of actuator saturation, inherent in all dynamical systems by using two approaches: positive invariance in which the controller is designed to work within a region of non-saturating linear behaviour; and saturation technique which allows saturation but guarantees asymptotic stability. The results obtained are extended from the linear systems in which they were first developed to switching systems with uncertainties, 2D switching systems, switching systems with Markovian jumping and switching systems of the Takagi-Sugeno type. The text represents a thoroughly referenced distillation of results obtained in this field during the last decade. The selected tool for analysis and design of stabilizing controllers is based on multiple Lyapunov functions and linear matrix inequalities. All the results are illustrated with numerical examples and figures many of them being modelled using MATLAB®. Saturated Switching Systems will be of interest to academic researchers in con...

  9. Electroforming and Switching in Oxides of Transition Metals: The Role of Metal Insulator Transition in the Switching Mechanism

    Science.gov (United States)

    Chudnovskii, F. A.; Odynets, L. L.; Pergament, A. L.; Stefanovich, G. B.

    1996-02-01

    Electroforming and switching effects in sandwich structures based on anodic films of transition metal oxides (V, Nb, Ti, Fe, Ta, W, Zr, Hf, Mo) have been studied. After being electroformed, some materials exhibited current-controlled negative resistance with S-shapedV-Icharacteristics. For V, Fe, Ti, and Nb oxides, the temperature dependences of the threshold voltage have been measured. As the temperature increased,Vthdecreased to zero at a critical temperatureT0, which depended on the film material. Comparison of theT0values with the temperatures of metal-insulator phase transition for some compounds (Tt= 120 K for Fe3O4, 340 K for VO2, ∼500 K for Ti2O3, and 1070 K for NbO2) showed that switching was related to the transition in the applied electric field. Channels consisting of the above-mentioned lower oxides were formed in the initial anodic films during the electroforming. The possibility of formation of these oxides with a metal-insulator transition was confirmed by thermodynamic calculations.

  10. Evaluation of resistive switching properties of Si-rich oxide embedded with Ti nanodots by applying constant voltage and current

    Science.gov (United States)

    Ohta, Akio; Kato, Yusuke; Ikeda, Mitsuhisa; Makihara, Katsunori; Miyazaki, Seiichi

    2018-06-01

    We have studied the resistive switching behaviors of electron beam (EB) evaporated Si-rich oxide (SiO x ) sandwiched between Ni electrodes by applying a constant voltage and current. Additionally, the impact of Ti nanodots (NDs) embedded into SiO x on resistive switching behaviors was investigated because it is expected that NDs can trigger the formation of a conductive filament path in SiO x . The resistive switching behaviors of SiO x show that the response time during resistance switching was decreased by increasing the applied constant current or constant voltage. It was found that Ti-NDs in SiO x enhance the conductive filament path formation owing to electric field concentration by Ti-NDs.

  11. Switching characteristics for ferroelectric random access memory based on RC model in poly(vinylidene fluoride-trifluoroethylene) ultrathin films

    Energy Technology Data Exchange (ETDEWEB)

    Liu, ChangLi [Department of Physics, East China University of Science and Technology, Shanghai 200237 (China); Complex and Intelligent System Research Center, East China University of Science and Technology, Shanghai 200237 (China); Wang, XueJun [Complex and Intelligent System Research Center, East China University of Science and Technology, Shanghai 200237 (China); Zhang, XiuLi [Department of Physics, East China University of Science and Technology, Shanghai 200237 (China); School of Fundamental Studies, Shanghai University of Engineering Science, Shanghai 201620 (China); Du, XiaoLi [School of Fundamental Studies, Shanghai University of Engineering Science, Shanghai 201620 (China); Xu, HaiSheng, E-mail: hsxu@ecust.edu.cn [Department of Physics, East China University of Science and Technology, Shanghai 200237 (China); Kunshan Hisense Electronics Co., Ltd., Kunshan, Jiangsu 215300 (China)

    2016-05-15

    The switching characteristic of the poly(vinylidene fluoride-trifluoroethlene) (P(VDF-TrFE)) films have been studied at different ranges of applied electric field. It is suggest that the increase of the switching speed upon nucleation protocol and the deceleration of switching could be related to the presence of a non-ferroelectric layer. Remarkably, a capacitor and resistor (RC) links model plays significant roles in the polarization switching dynamics of the thin films. For P(VDF-TrFE) ultrathin films with electroactive interlayer, it is found that the switching dynamic characteristics are strongly affected by the contributions of resistor and non-ferroelectric (non-FE) interface factors. A corresponding experiment is designed using poly(3,4-ethylene dioxythiophene):poly(styrene sulfonic) (PEDOT-PSSH) as interlayer with different proton concentrations, and the testing results show that the robust switching is determined by the proton concentration in interlayer and lower leakage current in circuit to reliable applications of such polymer films. These findings provide a new feasible method to enhance the polarization switching for the ferroelectric random access memory.

  12. Switching characteristics for ferroelectric random access memory based on RC model in poly(vinylidene fluoride-trifluoroethylene) ultrathin films

    International Nuclear Information System (INIS)

    Liu, ChangLi; Wang, XueJun; Zhang, XiuLi; Du, XiaoLi; Xu, HaiSheng

    2016-01-01

    The switching characteristic of the poly(vinylidene fluoride-trifluoroethlene) (P(VDF-TrFE)) films have been studied at different ranges of applied electric field. It is suggest that the increase of the switching speed upon nucleation protocol and the deceleration of switching could be related to the presence of a non-ferroelectric layer. Remarkably, a capacitor and resistor (RC) links model plays significant roles in the polarization switching dynamics of the thin films. For P(VDF-TrFE) ultrathin films with electroactive interlayer, it is found that the switching dynamic characteristics are strongly affected by the contributions of resistor and non-ferroelectric (non-FE) interface factors. A corresponding experiment is designed using poly(3,4-ethylene dioxythiophene):poly(styrene sulfonic) (PEDOT-PSSH) as interlayer with different proton concentrations, and the testing results show that the robust switching is determined by the proton concentration in interlayer and lower leakage current in circuit to reliable applications of such polymer films. These findings provide a new feasible method to enhance the polarization switching for the ferroelectric random access memory.

  13. Electronic logic to enhance switch reliability in detecting openings and closures of redundant switches

    Science.gov (United States)

    Cooper, James A.

    1986-01-01

    A logic circuit is used to enhance redundant switch reliability. Two or more switches are monitored for logical high or low output. The output for the logic circuit produces a redundant and failsafe representation of the switch outputs. When both switch outputs are high, the output is high. Similarly, when both switch outputs are low, the logic circuit's output is low. When the output states of the two switches do not agree, the circuit resolves the conflict by memorizing the last output state which both switches were simultaneously in and produces the logical complement of this output state. Thus, the logic circuit of the present invention allows the redundant switches to be treated as if they were in parallel when the switches are open and as if they were in series when the switches are closed. A failsafe system having maximum reliability is thereby produced.

  14. Automated design of DC-excited flux-switching in-wheel motor using magnetic equivalent circuits

    NARCIS (Netherlands)

    Tang, Y.; Paulides, J.J.H.; Lomonova, E.A.

    2015-01-01

    DC-excited flux-switching motors (DCEFSMs) are increasingly considered as candidate traction motors for electric vehicles due to their robust and magnet-free structure with relatively high torque density and extendable speed range. In this paper, an automated design tool based on nonlinear magnetic

  15. Nonvolatile resistive switching in Pt/laALO3/srTiO3 heterostructures

    KAUST Repository

    Wu, S.

    2013-12-12

    Resistive switching heterojunctions, which are promising for nonvolatile memory applications, usually share a capacitorlike metal-oxide-metal configuration. Here, we report on the nonvolatile resistive switching in Pt/LaAlO3/SrTiO3 heterostructures, where the conducting layer near the LaAlO3/SrTiO3 interface serves as the "unconventional"bottom electrode although both oxides are band insulators. Interestingly, the switching between low-resistance and high-resistance states is accompanied by reversible transitions between tunneling and Ohmic characteristics in the current transport perpendicular to the planes of the heterojunctions. We propose that the observed resistive switching is likely caused by the electric-field-induced drift of charged oxygen vacancies across the LaAlO3/SrTiO3 interface and the creation of defect-induced gap states within the ultrathin LaAlO3 layer. These metal-oxide-oxide heterojunctions with atomically smooth interfaces and defect-controlled transport provide a platform for the development of nonvolatile oxide nanoelectronics that integrate logic and memory devices.

  16. Switched capacitor DC-DC converter with switch conductance modulation and Pesudo-fixed frequency control

    DEFF Research Database (Denmark)

    Larsen, Dennis Øland; Vinter, Martin; Jørgensen, Ivan Harald Holger

    A switched capacitor dc-dc converter with frequency-planned control is presented. By splitting the output stage switches in eight segments the output voltage can be regulated with a combination of switching frequency and switch conductance. This allows for switching at predetermined frequencies, 31...

  17. Valuing a gas-fired power plant: A comparison of ordinary linear models, regime-switching approaches, and models with stochastic volatility

    International Nuclear Information System (INIS)

    Heydari, Somayeh; Siddiqui, Afzal

    2010-01-01

    Energy prices are often highly volatile with unexpected spikes. Capturing these sudden spikes may lead to more informed decision-making in energy investments, such as valuing gas-fired power plants, than ignoring them. In this paper, non-linear regime-switching models and models with mean-reverting stochastic volatility are compared with ordinary linear models. The study is performed using UK electricity and natural gas daily spot prices and suggests that with the aim of valuing a gas-fired power plant with and without operational flexibility, non-linear models with stochastic volatility, specifically for logarithms of electricity prices, provide better out-of-sample forecasts than both linear models and regime-switching models.

  18. Effective switching frequency multiplier inverter

    Science.gov (United States)

    Su, Gui-Jia [Oak Ridge, TN; Peng, Fang Z [Okemos, MI

    2007-08-07

    A switching frequency multiplier inverter for low inductance machines that uses parallel connection of switches and each switch is independently controlled according to a pulse width modulation scheme. The effective switching frequency is multiplied by the number of switches connected in parallel while each individual switch operates within its limit of switching frequency. This technique can also be used for other power converters such as DC/DC, AC/DC converters.

  19. Current-induced switching of magnetic molecules on topological insulator surfaces

    Science.gov (United States)

    Locane, Elina; Brouwer, Piet W.

    2017-03-01

    Electrical currents at the surface or edge of a topological insulator are intrinsically spin polarized. We show that such surface or edge currents can be used to switch the orientation of a molecular magnet weakly coupled to the surface or edge of a topological insulator. For the edge of a two-dimensional topological insulator as well as for the surface of a three-dimensional topological insulator the application of a well-chosen surface or edge current can lead to a complete polarization of the molecule if the molecule's magnetic anisotropy axis is appropriately aligned with the current direction. For a generic orientation of the molecule a nonzero but incomplete polarization is obtained. We calculate the probability distribution of the magnetic states and the switching rates as a function of the applied current.

  20. Instability in time-delayed switched systems induced by fast and random switching

    Science.gov (United States)

    Guo, Yao; Lin, Wei; Chen, Yuming; Wu, Jianhong

    2017-07-01

    In this paper, we consider a switched system comprising finitely or infinitely many subsystems described by linear time-delayed differential equations and a rule that orchestrates the system switching randomly among these subsystems, where the switching times are also randomly chosen. We first construct a counterintuitive example where even though all the time-delayed subsystems are exponentially stable, the behaviors of the randomly switched system change from stable dynamics to unstable dynamics with a decrease of the dwell time. Then by using the theories of stochastic processes and delay differential equations, we present a general result on when this fast and random switching induced instability should occur and we extend this to the case of nonlinear time-delayed switched systems as well.

  1. Interplay of cross-plane polaronic transport and resistive switching in Pt–Pr0.67Ca0.33MnO3–Pt heterostructures

    International Nuclear Information System (INIS)

    Scherff, M; Hoffmann, J; Meyer, B; Danz, Th; Jooss, Ch

    2013-01-01

    The identification of the cross-plane electric transport mechanisms in different resistance states of metal–oxide sandwich structures is essential for gaining insights into the mechanisms of resistive switching (RS). Here, we present a systematic study of cross-plane electric transport properties of Pr 0.67 Ca 0.33 MnO 3 (PCMO) thin films sandwiched by precious Pt metal electrodes. We observe three different transport regimes: ohmic, nonlinear and RS. The nonlinear regime is associated with colossal magneto-resistance (CMR) and colossal electro-resistance (CER) effects. In contrast to RS, the CMR and CER are volatile resistance effects which persist only during application of strong magnetic or electric fields and they are restricted to low temperatures. At low current densities, the device resistance is dominated by small polaron hopping transport of the PCMO film. At higher electric current densities near the switching threshold, the interface resistance starts to dominate and remarkably also exhibits thermally activated transport properties. Our studies also shed light onto the interplay of colossal resistance effects and RS: at low temperatures, RS can be only induced by reduction of the PCMO resistivity through CMR and CER. This clearly demonstrates the key role of the current density for controlling the amplitude of non-volatile resistive changes. Conversely, the CMR can be used as a probe for the switching induced changes in disorder and correlations. At small switching amplitudes, we observe slight changes in polaron activation energy which can be attributed to changes at the interface. If the switching amplitude exceeds 1000% and more, the CMR effect in the device can be reversibly changed. This indicates persistent changes in electronic or lattice structure of large regions within the PCMO film. (paper)

  2. Simulation and analysis of transient over voltages due to capacitor banks switching

    International Nuclear Information System (INIS)

    Jadid, Sh.; Yazdanpanah, D.

    2002-01-01

    The switching of any capacitor bank produces over voltages. Transient overvoltage will always occur in the switching device, the switching of shunt capacitor bank has become the most common source of transient voltage on power systems. Transient over voltages due to switching the capacitor bands hurt not only to the capacitor banks, but also to other equipment, such as circuit breakers and transformers. Several methods are available for reducing energising transients. These devices include pre-insertion resistors, pre-insertion inductors,synchronous closing, and MOV arresters. However, not all are practical or economical. The other important problem is existence of capacitor banks in presence of harmonics.Capacitors do not produce harmonics;however,the addition of capacitors to the electrical system will change the frequency response characteristics of the system will change the frequency response characteristics of the system, and in some cases can result in magnification of the voltage and current distortion in the system. In other word in presence of harmonic-producing loads,the capacitors used for power factor correction,may cause parallel resonance with the system inductance, so they increase the total harmonic distortion of voltage and current waveforms

  3. Latching micro optical switch

    Science.gov (United States)

    Garcia, Ernest J; Polosky, Marc A

    2013-05-21

    An optical switch reliably maintains its on or off state even when subjected to environments where the switch is bumped or otherwise moved. In addition, the optical switch maintains its on or off state indefinitely without requiring external power. External power is used only to transition the switch from one state to the other. The optical switch is configured with a fixed optical fiber and a movable optical fiber. The movable optical fiber is guided by various actuators in conjunction with a latching mechanism that configure the switch in one position that corresponds to the on state and in another position that corresponds to the off state.

  4. Resistance switching in epitaxial SrCoO{sub x} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Tambunan, Octolia T.; Parwanta, Kadek J.; Acharya, Susant K.; Lee, Bo Wha; Jung, Chang Uk, E-mail: cu-jung@hufs.ac.kr [Department of Physics, Hankuk University of Foreign Studies, Yongin 449-791 (Korea, Republic of); Kim, Yeon Soo; Park, Bae Ho [Division of Quantum Phases and Devices, Department of Physics, Konkuk University, Seoul 143-791 (Korea, Republic of); Jeong, Huiseong; Park, Ji-Yong [Department of Physics and Division of Energy System Research, Ajou University, Suwon 443-749 (Korea, Republic of); Cho, Myung Rae; Park, Yun Daniel [Department of Physics and Astronomy and Center for Subwavelength Optics, Seoul National University, Seoul 151-747 (Korea, Republic of); Choi, Woo Seok [Department of Physics, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Kim, Dong-Wook [Department of Physics, Ewha Womans University, Seoul 120-750 (Korea, Republic of); Jin, Hyunwoo; Lee, Suyoun [Electronic Materials Research Center, Korea Institute of Science and Technology, Seoul 136-791 (Korea, Republic of); Song, Seul Ji; Kang, Sung-Jin; Kim, Miyoung; Hwang, Cheol Seong [Department of Material Science and Engineering, Seoul National University, Seoul 151-747 (Korea, Republic of)

    2014-08-11

    We observed bipolar switching behavior from an epitaxial strontium cobaltite film grown on a SrTiO{sub 3} (001) substrate. The crystal structure of strontium cobaltite has been known to undergo topotactic phase transformation between two distinct phases: insulating brownmillerite (SrCoO{sub 2.5}) and conducting perovskite (SrCoO{sub 3−δ}) depending on the oxygen content. The current–voltage characteristics of the strontium cobaltite film showed that it could have a reversible insulator-to-metal transition triggered by electrical bias voltage. We propose that the resistance switching in the SrCoO{sub x} thin film could be related to the topotactic phase transformation and the peculiar structure of SrCoO{sub 2.5}.

  5. Optimal Transmission Line Switching under Geomagnetic Disturbances

    International Nuclear Information System (INIS)

    Lu, Mowen; Nagarajan, Harsha; Yamangil, Emre; Bent, Russell; Backhaus, Scott

    2017-01-01

    Recently, there have been increasing concerns about how geomagnetic disturbances (GMDs) impact electrical power systems. Geomagnetically-induced currents (GICs) can saturate transformers, induce hot spot heating and increase reactive power losses. These effects can potentially cause catastrophic damage to transformers and severely impact the ability of a power system to deliver power. To address this problem, we develop a model of GIC impacts to power systems that includes 1) GIC thermal capacity of transformers as a function of normal Alternating Current (AC) and 2) reactive power losses as a function of GIC. We also use this model to derive an optimization problem that protects power systems from GIC impacts through line switching, generator dispatch, and load shedding. We then employ state-of-the-art convex relaxations of AC power flow equations to lower bound the objective. We demonstrate the approach on a modified RTS96 system and UIUC 150-bus system and show that line switching is an effective means to mitigate GIC impacts. We also provide a sensitivity analysis of decisions with respect to GMD direction.

  6. Ab initio theory for current-induced molecular switching: Melamine on Cu(001)

    KAUST Repository

    Ohto, Tatsuhiko

    2013-05-28

    Melamine on Cu(001) is mechanically unstable under the current of a scanning tunneling microscope tip and can switch among configurations. However, these are not equally accessible, and the switching critical current depends on the bias polarity. In order to explain such rich phenomenology, we have developed a scheme to evaluate the evolution of the reaction paths and activation barriers as a function of bias, which is rooted in the nonequilibrium Green\\'s function method implemented within density functional theory. This, combined with the calculation of the inelastic electron tunneling spectroscopy signal, allows us to identify the vibrational modes promoting the observed molecular conformational changes. Finally, once our ab initio results are used within a resonance model, we are able to explain the details of the switching behavior, such as its dependence on the bias polarity, and the noninteger power relation between the reaction rate constants and both the bias voltage and the electric current. © 2013 American Physical Society.

  7. Bipolar resistive switching of single gold-in-Ga2O3 nanowire.

    Science.gov (United States)

    Hsu, Chia-Wei; Chou, Li-Jen

    2012-08-08

    We have fabricated single nanowire chips on gold-in-Ga(2)O(3) core-shell nanowires using the electron-beam lithography techniques and realized bipolar resistive switching characteristics having invariable set and reset voltages. We attribute the unique property of invariance to the built-in conduction path of gold core. This invariance allows us to fabricate many resistive switching cells with the same operating voltage by simple depositing repetitive metal electrodes along a single nanowire. Other characteristics of these core-shell resistive switching nanowires include comparable driving electric field with other thin film and nanowire devices and a remarkable on/off ratio more than 3 orders of magnitude at a low driving voltage of 2 V. A smaller but still impressive on/off ratio of 10 can be obtained at an even lower bias of 0.2 V. These characteristics of gold-in-Ga(2)O(3) core-shell nanowires make fabrication of future high-density resistive memory devices possible.

  8. Ab initio theory for current-induced molecular switching: Melamine on Cu(001)

    KAUST Repository

    Ohto, Tatsuhiko; Rungger, Ivan; Yamashita, Koichi; Nakamura, Hisao; Sanvito, Stefano

    2013-01-01

    Melamine on Cu(001) is mechanically unstable under the current of a scanning tunneling microscope tip and can switch among configurations. However, these are not equally accessible, and the switching critical current depends on the bias polarity. In order to explain such rich phenomenology, we have developed a scheme to evaluate the evolution of the reaction paths and activation barriers as a function of bias, which is rooted in the nonequilibrium Green's function method implemented within density functional theory. This, combined with the calculation of the inelastic electron tunneling spectroscopy signal, allows us to identify the vibrational modes promoting the observed molecular conformational changes. Finally, once our ab initio results are used within a resonance model, we are able to explain the details of the switching behavior, such as its dependence on the bias polarity, and the noninteger power relation between the reaction rate constants and both the bias voltage and the electric current. © 2013 American Physical Society.

  9. Raman analysis of ferroelectric switching in niobium-doped lead zirconate titanate thin films

    International Nuclear Information System (INIS)

    Ferrari, P.; Ramos-Moore, E.; Guitar, M.A.; Cabrera, A.L.

    2014-01-01

    Characteristic Raman vibration modes of niobium-doped lead zirconate titanate (PNZT) are studied as a function of ferroelectric domain switching. The microstructure of PNZT is characterized by scanning electron microscopy and X-ray diffraction. Ferroelectric switching is achieved by applying voltages between the top (Au) and bottom (Pt) electrodes, while acquiring the Raman spectra in situ. Vibrational active modes associated with paraelectric and ferroelectric phases are identified after measuring above and below the ferroelectric Curie temperature, respectively. Changes in the relative intensities of the Raman peaks are observed as a function of the switching voltage. The peak area associated with the ferroelectric modes is analyzed as a function of the applied voltage within one ferroelectric polarization loop, showing local maxima around the coercive voltage. This behavior can be understood in terms of the correlation between vibrational and structural properties, since ferroelectric switching modifies the interaction between the body-centered atom (Zr, Ti or Nb) and the Pb–O lattice. - Highlights: • Electric fields induce structural distortions on ferroelectric perovskites. • Ferroelectric capacitor was fabricated to perform hysteresis loops. • Raman analysis was performed in situ during ferroelectric switching. • Raman modes show hysteresis and inflections around the coercive voltages. • Data can be understood in terms of vibrational–structural correlations

  10. Low-field Switching Four-state Nonvolatile Memory Based on Multiferroic Tunnel Junctions

    Science.gov (United States)

    Yau, H. M.; Yan, Z. B.; Chan, N. Y.; Au, K.; Wong, C. M.; Leung, C. W.; Zhang, F. Y.; Gao, X. S.; Dai, J. Y.

    2015-08-01

    Multiferroic tunneling junction based four-state non-volatile memories are very promising for future memory industry since this kind of memories hold the advantages of not only the higher density by scaling down memory cell but also the function of magnetically written and electrically reading. In this work, we demonstrate a success of this four-state memory in a material system of NiFe/BaTiO3/La0.7Sr0.3MnO3 with improved memory characteristics such as lower switching field and larger tunneling magnetoresistance (TMR). Ferroelectric switching induced resistive change memory with OFF/ON ratio of 16 and 0.3% TMR effect have been achieved in this multiferroic tunneling structure.

  11. Study of the switching rate of gas-discharge devices based on the open discharge with counter-propagating electron beams

    International Nuclear Information System (INIS)

    Bokhan, P. A.; Gugin, P. P.; Lavrukhin, M. A.; Zakrevsky, Dm. E.

    2015-01-01

    The switching rate of gas-discharge devices “kivotrons” based on the open discharge with counter-propagating electron beams has been experimentally studied. Structures with 2-cm 2 overall cathode area were examined. The switching time was found to show a monotonic decrease with increasing the working-gas helium pressure and with increasing the voltage across the discharge gap at breakdown. The minimum switching time was found to be ∼240 ps at 17 kV voltage, and the maximum rate of electric-current rise limited by the discharge-circuit inductance was 3 × 10 12  A/s

  12. Microwave plasma source having improved switching operation from plasma ignition phase to normal ion extraction phase

    International Nuclear Information System (INIS)

    Sakudo, N.; Abe, K.; Koike, H.; Okada, O.; Tokiguchi, K.

    1985-01-01

    In a microwave plasma source, a discharge space supplied with a microwave electric field is supplied with a DC magnetic field. A material to be ionized is introduced into the discharge space to produce plasma, whereby ions are extracted through an ion extracting system. A switch is provided for effecting through switching operation the change-over of the magnetic field applied to the discharge space from the intensity for the ignition of plasma to the intensity for ion extraction in succession to completion of the plasma ignition

  13. 160-Gb/s Silicon All-Optical Packet Switch for Buffer-less Optical Burst Switching

    DEFF Research Database (Denmark)

    Hu, Hao; Ji, Hua; Pu, Minhao

    2015-01-01

    We experimentally demonstrate a 160-Gb/s Ethernet packet switch using an 8.6-mm-long silicon nanowire for optical burst switching, based on cross phase modulation in silicon. One of the four packets at the bit rate of 160 Gb/s is switched by an optical control signal using a silicon based 1 × 1 all......-optical packet switch. Error free performance (BER silicon packet switch based optical burst switching, which might be desirable for high-speed interconnects within a short...

  14. Redox-controlled memristive switching in the junctions employing Ti reactive electrodes

    Directory of Open Access Journals (Sweden)

    Haitao Li

    2011-09-01

    Full Text Available We have proposed a kind of memristive device based on the junctions employing Ti as the reactive electrodes. The role of electrically-derived redox of Ti in such memristive switching is shown. The structural and chemical evidence of the electrically-derived oxidation is presented by TEM and XPS experiment, respectively. Due to the redox of the top electrode Ti and the consequent drift of oxygen vacancies, the device shows two distinct resistance states under a sweeping voltage loading. ON state is controlled by tunneling process, while OFF state is controlled by Schottky emission conductive mechanism. The failure behaviors of such memristive junctions are also discussed. In the light of the redox principle, we demonstrate that the devices could be recovered by loading a long electrical reduction treatment.

  15. Task Uncertainty Can Account for Mixing and Switch Costs in Task-Switching

    Science.gov (United States)

    Rennie, Jaime L.

    2015-01-01

    Cognitive control is required in situations that involve uncertainty or change, such as when resolving conflict, selecting responses and switching tasks. Recently, it has been suggested that cognitive control can be conceptualised as a mechanism which prioritises goal-relevant information to deal with uncertainty. This hypothesis has been supported using a paradigm that requires conflict resolution. In this study, we examine whether cognitive control during task switching is also consistent with this notion. We used information theory to quantify the level of uncertainty in different trial types during a cued task-switching paradigm. We test the hypothesis that differences in uncertainty between task repeat and task switch trials can account for typical behavioural effects in task-switching. Increasing uncertainty was associated with less efficient performance (i.e., slower and less accurate), particularly on switch trials and trials that afford little opportunity for advance preparation. Interestingly, both mixing and switch costs were associated with a common episodic control process. These results support the notion that cognitive control may be conceptualised as an information processor that serves to resolve uncertainty in the environment. PMID:26107646

  16. Controllability of multi-agent systems with periodically switching topologies and switching leaders

    Science.gov (United States)

    Tian, Lingling; Zhao, Bin; Wang, Long

    2018-05-01

    This paper considers controllability of multi-agent systems with periodically switching topologies and switching leaders. The concept of m-periodic controllability is proposed, and a criterion for m-periodic controllability is established. The effect of the duration of subsystems on controllability is analysed by utilising a property of analytic functions. In addition, the influence of switching periods on controllability is investigated, and an algorithm is proposed to search for the fewest periods to ensure controllability. A necessary condition for m-periodic controllability is obtained from the perspective of eigenvectors of the subsystems' Laplacian matrices. For a system with switching leaders, it is proved that switching-leader controllability is equivalent to multiple-leader controllability. Furthermore, both the switching order and the tenure of agents being leaders have no effect on the controllability. Some examples are provided to illustrate the theoretical results.

  17. High voltage fast switches for nuclear applications

    International Nuclear Information System (INIS)

    Chatroux, D.; Lausenaz, Y.; Villard, J.F.; Lafore, D.

    1999-01-01

    SILVA process consists in a selective ionization of the 235 uranium isotope, using laser beams generated by dye lasers pumped by copper vapour laser (C.V.L.). SILVA involves power electronic for 3 power supplies: - copper vapour laser power supply, - extraction power supply to generate the electric field in the vapour, and - electron beam power supply for vapour generation. This article reviews the main switches that are proposed on the market or are on development and that could be used in SILVA power supplies. The SILVA technical requirements are: high power, high voltage and very short pulses (200 ns width). (A.C.)

  18. Evaluation of DC electric field distribution of PPLP specimen based on the measurement of electrical conductivity in LN2

    International Nuclear Information System (INIS)

    Hwang, Jae-Sang; Seong, Jae-Kyu; Shin, Woo-Ju; Lee, Jong-Geon; Cho, Jeon-Wook; Ryoo, Hee-Suk; Lee, Bang-Wook

    2013-01-01

    PPLP specimen was fully analyzed considering the steady state and the transient state of DC. Consequently, it was possible to determine the electric field distribution characteristics considering different DC applying stages including DC switching on, DC switching off and polarity reversal conditions

  19. Electron beam potential measurements on an inductive-store, opening-switch accelerator

    International Nuclear Information System (INIS)

    Riordan, J.C.; Goyer, J.R.; Kortbawi, D.; Meachum, J.S.; Mendenhall, R.S.; Roth, I.S.

    1993-01-01

    Direct measurement of the accelerating potential in a relativistic electron beam accelerator is difficult, particularly when the diode is downstream from a plasma opening switch. An indirect potential measurement can be obtained from the high energy tail of the bremsstrahlung spectrum generated as the electron beam strikes the anode. The authors' time-resolved spectrometer contains 7 silicon pin diode detectors filtered with 2 to 15 mm of lead to span an electron energy range of 0.5 to 2 MeV. A Monte-Carlo transport code was used to provide calibration curves, and the resulting potential measurements have been confirmed in experiments on the PITHON accelerator. The spectrometer has recently been deployed on PM1, an inductive-store, opening-switch testbed. The diode voltage measurements from the spectrometer are in good agreement with the diode voltage measured upstream and corrected using transmission line relations. The x-ray signal and spectral voltage rise 10 ns later than the corrected electrical voltage, however, indicating plasma motion between the opening switch and the diode

  20. Discharging a DC bus capacitor of an electrical converter system

    Science.gov (United States)

    Kajouke, Lateef A; Perisic, Milun; Ransom, Ray M

    2014-10-14

    A system and method of discharging a bus capacitor of a bidirectional matrix converter of a vehicle are presented here. The method begins by electrically shorting the AC interface of the converter after an AC energy source is disconnected from the AC interface. The method continues by arranging a plurality of switching elements of a second energy conversion module into a discharge configuration to establish an electrical current path from a first terminal of an isolation module, through an inductive element, and to a second terminal of the isolation module. The method also modulates a plurality of switching elements of a first energy conversion module, while maintaining the discharge configuration of the second energy conversion module, to at least partially discharge a DC bus capacitor.

  1. Effect of electrode type in the resistive switching behaviour of TiO2 thin films

    International Nuclear Information System (INIS)

    Hernández-Rodríguez, E; Zapata-Torres, M; Márquez-Herrera, A; Zaleta-Alejandre, E; Meléndez-Lira, M; Cruz, W de la

    2013-01-01

    The influence of the electrode/active layer on the electric-field-induced resistance-switching phenomena of TiO 2 -based metal-oxide-metal devices (MOM) is studied. TiO 2 active layers were fabricated by the reactive rf-sputtering technique and devices were made by sandwiching between several metal electrodes. Three different MOM devices were made, according with the junction type formed between the electrode and the TiO 2 active layer, those where Ohmic-Ohmic, Ohmic-Schottky and Schottky-Schottky. The junction type was tested by electrical I-V measurements. It was found that MOM devices made with the Ohmic-Ohmic combination did not show any resistive switching behaviour in contrast with devices made with Ohmic-Schottky and Schottky-Schottky combinations. From a detailed analysis of the I-V curves it was found that transport characteristics are Ohmic for the low-resistance state for all the contacts combinations of the MOM devices, whereas in the high-resistance state it depends on contact combinations and can be identified as Ohmic, Schottky and Poole-Frenkel type. These conduction mechanisms in the low- and high-resistance states suggest that formation and rupture of conducting filaments through the film oxide is the mechanism responsible for the resistance switching.

  2. Ultrathin limit and dead-layer effects in local polarization switching of BiFeO3

    NARCIS (Netherlands)

    Maksymovych, P.; Huijben, Mark; Pan, M.; Jesse, S.; Balke, N.; Chu, Y.H.; Chang, H.J.; Borisevich, A.Y.; Baddorf, A.P.; Rijnders, Augustinus J.H.M.; Blank, David H.A.; Ramesh, R.; Kalinin, S.V.

    2012-01-01

    Using piezoresponse force microscopy in an ultrahigh vacuum, polarization switching has been detected and quantified in epitaxial BiFeO3 films from 200 to about 4 unit cells thick. Local remnant piezoresponse was utilized to probe both ferroelectric properties and effects of imperfect electrical

  3. Graphene Based Reversible Nano-Switch/Sensor Schottky Diode (NANOSSSD) Device

    Science.gov (United States)

    Miranda, Felix A. (Inventor); Theofylaktos, Onoufrios (Inventor); Pinto, Nicholas J. (Inventor); Mueller, Carl H. (Inventor); Santos, Javier (Inventor); Meador, Michael A. (Inventor)

    2015-01-01

    A nanostructure device is provided and performs dual functions as a nano-switching/sensing device. The nanostructure device includes a doped semiconducting substrate, an insulating layer disposed on the doped semiconducting substrate, an electrode formed on the insulating layer, and at least one layer of graphene formed on the electrode. The at least one layer of graphene provides an electrical connection between the electrode and the substrate and is the electroactive element in the device.

  4. Migration of interfacial oxygen ions modulated resistive switching in oxide-based memory devices

    Science.gov (United States)

    Chen, C.; Gao, S.; Zeng, F.; Tang, G. S.; Li, S. Z.; Song, C.; Fu, H. D.; Pan, F.

    2013-07-01

    Oxides-based resistive switching memory induced by oxygen ions migration is attractive for future nonvolatile memories. Numerous works had focused their attentions on the sandwiched oxide materials for depressing the characteristic variations, but the comprehensive studies of the dependence of electrodes on the migration behavior of oxygen ions are overshadowed. Here, we investigated the interaction of various metals (Ni, Co, Al, Ti, Zr, and Hf) with oxygen atoms at the metal/Ta2O5 interface under electric stress and explored the effect of top electrode on the characteristic variations of Ta2O5-based memory device. It is demonstrated that chemically inert electrodes (Ni and Co) lead to the scattering switching characteristics and destructive gas bubbles, while the highly chemically active metals (Hf and Zr) formed a thick and dense interfacial intermediate oxide layer at the metal/Ta2O5 interface, which also degraded the resistive switching behavior. The relatively chemically active metals (Al and Ti) can absorb oxygen ions from the Ta2O5 film and avoid forming the problematic interfacial layer, which is benefit to the formation of oxygen vacancies composed conduction filaments in Ta2O5 film thus exhibit the minimum variations of switching characteristics. The clarification of oxygen ions migration behavior at the interface can lead further optimization of resistive switching performance in Ta2O5-based memory device and guide the rule of electrode selection for other oxide-based resistive switching memories.

  5. Nonvolatile Resistive Switching in Pt/LaAlO_{3}/SrTiO_{3} Heterostructures

    Directory of Open Access Journals (Sweden)

    Shuxiang Wu

    2013-12-01

    Full Text Available Resistive switching heterojunctions, which are promising for nonvolatile memory applications, usually share a capacitorlike metal-oxide-metal configuration. Here, we report on the nonvolatile resistive switching in Pt/LaAlO_{3}/SrTiO_{3} heterostructures, where the conducting layer near the LaAlO_{3}/SrTiO_{3} interface serves as the “unconventional” bottom electrode although both oxides are band insulators. Interestingly, the switching between low-resistance and high-resistance states is accompanied by reversible transitions between tunneling and Ohmic characteristics in the current transport perpendicular to the planes of the heterojunctions. We propose that the observed resistive switching is likely caused by the electric-field-induced drift of charged oxygen vacancies across the LaAlO_{3}/SrTiO_{3} interface and the creation of defect-induced gap states within the ultrathin LaAlO_{3} layer. These metal-oxide-oxide heterojunctions with atomically smooth interfaces and defect-controlled transport provide a platform for the development of nonvolatile oxide nanoelectronics that integrate logic and memory devices.

  6. Photo-switching element

    Energy Technology Data Exchange (ETDEWEB)

    Masaki, Yuichi

    1987-10-31

    Photo-input MOS transistor (Photo-switching element) cannot give enough ON/OFF ratio but requires an auxiliary condenser for a certain type of application. In addition, PN junction of amorphous silicon is not practical because it gives high leak current resulting in low electromotive force. In this invention, a solar cell was constructed with a lower electrode consisting of a transparent electro-conducting film, a photosensitive part consisting of an amorphous Si layer of p-i-n layer construction, and an upper metal electrode consisting of Cr or Nichrome, and a thin film transistor was placed on the solar cell, and further the upper metal electrode was co-used as a gate electrode of the thin film transistor; this set-up of this invention enabled to attain an efficient photo-electric conversion of the incident light, high electromotive force of the solar cell, and the transistor with high ON/OFF ratio. (3 figs)

  7. Electric-Field-Induced Magnetization Reversal in a Ferromagnet-Multiferroic Heterostructure

    Science.gov (United States)

    Heron, J. T.; Trassin, M.; Ashraf, K.; Gajek, M.; He, Q.; Yang, S. Y.; Nikonov, D. E.; Chu, Y.-H.; Salahuddin, S.; Ramesh, R.

    2011-11-01

    A reversal of magnetization requiring only the application of an electric field can lead to low-power spintronic devices by eliminating conventional magnetic switching methods. Here we show a nonvolatile, room temperature magnetization reversal determined by an electric field in a ferromagnet-multiferroic system. The effect is reversible and mediated by an interfacial magnetic coupling dictated by the multiferroic. Such electric-field control of a magnetoelectric device demonstrates an avenue for next-generation, low-energy consumption spintronics.

  8. Electrical conduction in solid materials physicochemical bases and possible applications

    CERN Document Server

    Suchet, J P

    2013-01-01

    Electrical Conduction in Solid Materials (Physicochemical Bases and Possible Applications) investigates the physicochemical bases and possible applications of electrical conduction in solid materials, with emphasis on conductors, semiconductors, and insulators. Topics range from the interatomic bonds of conductors to the effective atomic charge in conventional semiconductors and magnetic transitions in switching semiconductors. Comprised of 10 chapters, this volume begins with a description of electrical conduction in conductors and semiconductors, metals and alloys, as well as interatomic bon

  9. Optimal switching using coherent control

    DEFF Research Database (Denmark)

    Kristensen, Philip Trøst; Heuck, Mikkel; Mørk, Jesper

    2013-01-01

    that the switching time, in general, is not limited by the cavity lifetime. Therefore, the total energy required for switching is a more relevant figure of merit than the switching speed, and for a particular two-pulse switching scheme we use calculus of variations to optimize the switching in terms of input energy....

  10. Modeling and forecasting of wind power generation - Regime-switching approaches

    DEFF Research Database (Denmark)

    Trombe, Pierre-Julien

    The present thesis addresses a number of challenges emerging from the increasing penetration of renewable energy sources into power systems. Focus is placed on wind energy and large-scale offshore wind farms. Indeed, offshore wind power variability is becoming a serious obstacle to the integration...... of more renewable energy into power systems since these systems are subjected to maintain a strict balance between electricity consumption and production, at any time. For this purpose, wind power forecasts offer an essential support to power system operators. In particular, there is a growing demand...... case study is the Horns Rev wind farm located in the North Sea. Regime-switching aspects of offshore wind power fluctuations are investigated. Several formulations of Markov-Switching models are proposed in order to better characterize the stochastic behavior of the underlying process and improve its...

  11. Switch-connected HyperX network

    Science.gov (United States)

    Chen, Dong; Heidelberger, Philip

    2018-02-13

    A network system includes a plurality of sub-network planes and global switches. The sub-network planes have a same network topology as each other. Each of the sub-network planes includes edge switches. Each of the edge switches has N ports. Each of the global switches is configured to connect a group of edge switches at a same location in the sub-network planes. In each of the sub-network planes, some of the N ports of each of the edge switches are connected to end nodes, and others of the N ports are connected to other edge switches in the same sub-network plane, other of the N ports are connected to at least one of the global switches.

  12. Electric current - frequency converter

    International Nuclear Information System (INIS)

    Kumahara, Tadashi; Kinbana, Setsuro.

    1967-01-01

    Herein disclosed is an improved simple electric current-frequency converter, the input current and output frequency linearity of which is widened to a range of four to five figures while compensating, for temperature. The converter may be used for computor processing and for telemetering the output signals from a nuclear reactor. The converter is an astable multivibrator which includes charging circuits comprising emitter-voltage compensated NPN transistors, a charged voltage detecting circuit of temperature compensated field effect transistors, and a transistor switching circuit for generating switching pulses independent of temperature. The converter exhibited a 0.7% frequency change within a range of 5 - 45 0 C and less than a 0.1% frequency drift after six hours of operation when the input current was maintained constant. (Yamaguchi, T.)

  13. FreeSWITCH Cookbook

    CERN Document Server

    Minessale, Anthony

    2012-01-01

    This is a problem-solution approach to take your FreeSWITCH skills to the next level, where everything is explained in a practical way. If you are a system administrator, hobbyist, or someone who uses FreeSWITCH on a regular basis, this book is for you. Whether you are a FreeSWITCH expert or just getting started, this book will take your skills to the next level.

  14. Task-set switching under cue-based versus memory-based switching conditions in younger and older adults.

    Science.gov (United States)

    Kray, Jutta

    2006-08-11

    Adult age differences in task switching and advance preparation were examined by comparing cue-based and memory-based switching conditions. Task switching was assessed by determining two types of costs that occur at the general (mixing costs) and specific (switching costs) level of switching. Advance preparation was investigated by varying the time interval until the next task (short, middle, very long). Results indicated that the implementation of task sets was different for cue-based switching with random task sequences and memory-based switching with predictable task sequences. Switching costs were strongly reduced under cue-based switching conditions, indicating that task-set cues facilitate the retrieval of the next task. Age differences were found for mixing costs and for switching costs only under cue-based conditions in which older adults showed smaller switching costs than younger adults. It is suggested that older adults adopt a less extreme bias between two tasks than younger adults in situations associated with uncertainty. For cue-based switching with random task sequences, older adults are less engaged in a complete reconfiguration of task sets because of the probability of a further task change. Furthermore, the reduction of switching costs was more pronounced for cue- than memory-based switching for short preparation intervals, whereas the reduction of switch costs was more pronounced for memory- than cue-based switching for longer preparation intervals at least for older adults. Together these findings suggest that the implementation of task sets is functionally different for the two types of task-switching conditions.

  15. Task uncertainty can account for mixing and switch costs in task-switching.

    Directory of Open Access Journals (Sweden)

    Patrick S Cooper

    Full Text Available Cognitive control is required in situations that involve uncertainty or change, such as when resolving conflict, selecting responses and switching tasks. Recently, it has been suggested that cognitive control can be conceptualised as a mechanism which prioritises goal-relevant information to deal with uncertainty. This hypothesis has been supported using a paradigm that requires conflict resolution. In this study, we examine whether cognitive control during task switching is also consistent with this notion. We used information theory to quantify the level of uncertainty in different trial types during a cued task-switching paradigm. We test the hypothesis that differences in uncertainty between task repeat and task switch trials can account for typical behavioural effects in task-switching. Increasing uncertainty was associated with less efficient performance (i.e., slower and less accurate, particularly on switch trials and trials that afford little opportunity for advance preparation. Interestingly, both mixing and switch costs were associated with a common episodic control process. These results support the notion that cognitive control may be conceptualised as an information processor that serves to resolve uncertainty in the environment.

  16. LCT protective dump-switch tests

    International Nuclear Information System (INIS)

    Parsons, W.M.

    1981-01-01

    Each of the six coils in the Large Coil Task (LCT) has a separate power supply, dump resistor, and switching circuit. Each switching circuit contains five switches, two of which are redundant. The three remaining switches perform separate duties in an emergency dump situation. These three switches were tested to determine their ability to meet the LCT conditions

  17. An Enhanced Three-Level Voltage Switching State Scheme for Direct Torque Controlled Open End Winding Induction Motor

    Science.gov (United States)

    Kunisetti, V. Praveen Kumar; Thippiripati, Vinay Kumar

    2018-01-01

    Open End Winding Induction Motors (OEWIM) are popular for electric vehicles, ship propulsion applications due to less DC link voltage. Electric vehicles, ship propulsions require ripple free torque. In this article, an enhanced three-level voltage switching state scheme for direct torque controlled OEWIM drive is implemented to reduce torque and flux ripples. The limitations of conventional Direct Torque Control (DTC) are: possible problems during low speeds and starting, it operates with variable switching frequency due to hysteresis controllers and produces higher torque and flux ripple. The proposed DTC scheme can abate the problems of conventional DTC with an enhanced voltage switching state scheme. The three-level inversion was obtained by operating inverters with equal DC-link voltages and it produces 18 voltage space vectors. These 18 vectors are divided into low and high frequencies of operation based on rotor speed. The hardware results prove the validity of proposed DTC scheme during steady-state and transients. From simulation and experimental results, proposed DTC scheme gives less torque and flux ripples on comparison to two-level DTC. The proposed DTC is implemented using dSPACE DS-1104 control board interface with MATLAB/SIMULINK-RTI model.

  18. Quantum switching of polarization in mesoscopic ferroelectrics

    International Nuclear Information System (INIS)

    Sa de Melo, C.A.

    1996-01-01

    A single domain of a uniaxial ferroelectric grain may be thought of as a classical permanent memory. At the mesoscopic level this system may experience considerable quantum fluctuations due to tunneling between two possible memory states, thus destroying the classical permanent memory effect. To study these quantum effects the concrete example of a mesoscopic uniaxial ferroelectric grain is discussed, where the orientation of the electric polarization determines two possible memory states. The possibility of quantum switching of the polarization in mesoscopic uniaxial ferroelectric grains is thus proposed. To determine the degree of memory loss, the tunneling rate between the two polarization states is calculated at zero temperature both in the absence and in the presence of an external static electric field. In addition, a discussion of crossover temperature between thermally activated behavior and quantum tunneling behavior is presented. And finally, environmental effects (phonons, defects, and surfaces) are also considered. copyright 1996 The American Physical Society

  19. Co nanoparticles induced resistive switching and magnetism for the electrochemically deposited polypyrrole composite films.

    Science.gov (United States)

    Xu, Zedong; Gao, Min; Yu, Lina; Lu, Liying; Xu, Xiaoguang; Jiang, Yong

    2014-10-22

    The resistive switching behavior of Co-nanoparticle-dispersed polypyrrole (PPy) composite films is studied. A novel design method for resistive random access memory (ReRAM) is proposed. The conducting polymer films with metal nanocrystal (NC)-dispersed carbon chains induce the spontaneous oxidization of the conducting polymer at the surface. The resistive switching behavior is achieved by an electric field controlling the oxygen ion mobility between the metal electrode and the conducting polymer film to realize the mutual transition between intrinsic conduction (low resistive state) and oxidized layer conduction (high resistive state). Furthermore, the formation process of intrinsic conductive paths can be effectively controlled in the conducting polymer ReRAM using metal NCs in films because the inner metal NCs induce electric field lines converging around them and the intensity of the electric field at the tip of NCs can greatly exceed that of the other region. Metal NCs can also bring new characteristics for ReRAM, such as magnetism by dispersing magnetic metal NCs in polymer, to obtain multifunctional electronic devices or meet some special purpose in future applications. Our works will enrich the application fields of the electromagnetic PPy composite films and present a novel material for ReRAM devices.

  20. Evaluation of DC electric field distribution of PPLP specimen based on the measurement of electrical conductivity in LN{sub 2}

    Energy Technology Data Exchange (ETDEWEB)

    Hwang, Jae-Sang; Seong, Jae-Kyu; Shin, Woo-Ju; Lee, Jong-Geon [Hanyang University, 408-2, 4th Engineering Bldg, Sa 3-dong, Sangrok-gu, Ansan 426-791 (Korea, Republic of); Cho, Jeon-Wook; Ryoo, Hee-Suk [Korea Electrotechnology Research Institute, Changwon, Gyungnam 641-120 (Korea, Republic of); Lee, Bang-Wook, E-mail: bangwook@hanyang.ac.kr [Hanyang University, 408-2, 4th Engineering Bldg, Sa 3-dong, Sangrok-gu, Ansan 426-791 (Korea, Republic of)

    2013-11-15

    field distribution of PPLP specimen was fully analyzed considering the steady state and the transient state of DC. Consequently, it was possible to determine the electric field distribution characteristics considering different DC applying stages including DC switching on, DC switching off and polarity reversal conditions.

  1. Bipolar resistive switching in room temperature grown disordered vanadium oxide thin-film devices

    Science.gov (United States)

    Wong, Franklin J.; Sriram, Tirunelveli S.; Smith, Brian R.; Ramanathan, Shriram

    2013-09-01

    We demonstrate bipolar switching with high OFF/ON resistance ratios (>104) in Pt/vanadium oxide/Cu structures deposited entirely at room temperature. The SET (RESET) process occurs when negative (positive) bias is applied to the top Cu electrode. The vanadium oxide (VOx) films are amorphous and close to the vanadium pentoxide stoichiometry. We also investigated Cu/VOx/W structures, reversing the position of the Cu electrode, and found the same polarity dependence with respect to the top and bottom electrodes, which suggests that the bipolar nature is linked to the VOx layer itself. Bipolar switching can be observed at 100 °C, indicating that it not due to a temperature-induced metal-insulator transition of a vanadium dioxide second phase. We discuss how ionic drift can lead to the bipolar electrical behavior of our junctions, similar to those observed in devices based on several other defective oxides. Such low-temperature processed oxide switches could be of relevance to back-end or package integration processing schemes.

  2. A Digital Hysteresis Current Control for Half-Bridge Inverters with Constrained Switching Frequency

    Directory of Open Access Journals (Sweden)

    Triet Nguyen-Van

    2017-10-01

    Full Text Available This paper proposes a new robustly adaptive hysteresis current digital control algorithm for half-bridge inverters, which plays an important role in electric power, and in various applications in electronic systems. The proposed control algorithm is assumed to be implemented on a high-speed Field Programmable Gate Array (FPGA circuit, using measured data with high sampling frequency. The hysteresis current band is computed in each switching modulation period based on both the current error and the negative half switching period during the previous modulation period, in addition to the conventionally used voltages measured at computation instants. The proposed control algorithm is derived by solving the optimization problem—where the switching frequency is always constrained at below the desired constant frequency—which is not guaranteed by the conventional method. The optimization problem also keeps the output current stable around the reference, and minimizes power loss. Simulation results show good performances of the proposed algorithm compared with the conventional one.

  3. Switch on, switch off: stiction in nanoelectromechanical switches

    KAUST Repository

    Wagner, Till J W

    2013-06-13

    We present a theoretical investigation of stiction in nanoscale electromechanical contact switches. We develop a mathematical model to describe the deflection of a cantilever beam in response to both electrostatic and van der Waals forces. Particular focus is given to the question of whether adhesive van der Waals forces cause the cantilever to remain in the \\'ON\\' state even when the electrostatic forces are removed. In contrast to previous studies, our theory accounts for deflections with large slopes (i.e. geometrically nonlinear). We solve the resulting equations numerically to study how a cantilever beam adheres to a rigid electrode: transitions between \\'free\\', \\'pinned\\' and \\'clamped\\' states are shown to be discontinuous and to exhibit significant hysteresis. Our findings are compared to previous results from linearized models and the implications for nanoelectromechanical cantilever switch design are discussed. © 2013 IOP Publishing Ltd.

  4. Advanced electrical power system technology for the all electric aircraft

    Science.gov (United States)

    Finke, R. C.; Sundberg, G. R.

    1983-01-01

    The application of advanced electric power system technology to an all electric airplane results in an estimated reduction of the total takeoff gross weight of over 23,000 pounds for a large airplane. This will result in a 5 to 10 percent reduction in direct operating costs (DOC). Critical to this savings is the basic electrical power system component technology. These advanced electrical power components will provide a solid foundation for the materials, devices, circuits, and subsystems needed to satisfy the unique requirements of advanced all electric aircraft power systems. The program for the development of advanced electrical power component technology is described. The program is divided into five generic areas: semiconductor devices (transistors, thyristors, and diodes); conductors (materials and transmission lines); dielectrics; magnetic devices; and load management devices. Examples of progress in each of the five areas are discussed. Bipolar power transistors up to 1000 V at 100 A with a gain of 10 and a 0.5 microsec rise and fall time are presented. A class of semiconductor devices with a possibility of switching up to 100 kV is described. Solid state power controllers for load management at 120 to 1000 V and power levels to 25 kW were developed along with a 25 kW, 20 kHz transformer weighing only 3.2 kg. Previously announced in STAR as N83-24764

  5. Advanced electrical power system technology for the all electric aircraft

    Science.gov (United States)

    Finke, R. C.; Sundberg, G. R.

    1983-01-01

    The application of advanced electric power system technology to an all electric airplane results in an estimated reduction of the total takeoff gross weight of over 23,000 pounds for a large airplane. This will result in a 5 to 10 percent reduction in direct operating costs (DOC). Critical to this savings is the basic electrical power system component technology. These advanced electrical power components will provide a solid foundation for the materials, devices, circuits, and subsystems needed to satisfy the unique requirements of advanced all electric aircraft power systems. The program for the development of advanced electrical power component technology is described. The program is divided into five generic areas: semiconductor devices (transistors, thyristors, and diodes); conductors (materials and transmission lines); dielectrics; magnetic devices; and load management devices. Examples of progress in each of the five areas are discussed. Bipolar power transistors up to 1000 V at 100 A with a gain of 10 and a 0.5 microsec rise and fall time are presented. A class of semiconductor devices with a possibility of switching up to 100 kV is described. Solid state power controllers for load management at 120 to 1000 V and power levels to 25 kW were developed along with a 25 kW, 20 kHz transformer weighing only 3.2 kg.

  6. Design and implementation of microcontroller-based automatic sequence counting and switching system

    Directory of Open Access Journals (Sweden)

    Joshua ABOLARINWA

    2015-05-01

    Full Text Available Technological advancement and its influence on human being have been on the increase in recent time. Major areas of such influence, include monitoring and control activities. In order to keep track of human movement in and out of a particular building, there is the need for an automatic counting system. Therefore, in this paper, we present the design and implementation of a microcontroller-based automatic sequence counting and switching system. This system was designed and developed to save cost, time, energy, and to achieve seamless control in the event of switching on or off of electrical appliances within a building. Top-down modular design approach was used in conjunction with the versatility of microcontroller. The system is able to monitor, sequentially count the number of entry and exit of people through an entrance, afterwards, automatically control any electrical device connected to it. From various tests and measurements obtained, there are comparative benefits derived from the deployment of this system in terms of simplicity and accuracy over similar system that is not microcontroller-based. Therefore, this system can be deployed at commercial quantity with wide range of applications in homes, offices and other public places.

  7. Extreme nonlinear terahertz electro-optics in diamond for ultrafast pulse switching

    Science.gov (United States)

    Shalaby, Mostafa; Vicario, Carlo; Hauri, Christoph P.

    2017-03-01

    Polarization switching of picosecond laser pulses is a fundamental concept in signal processing [C. Chen and G. Liu, Annu. Rev. Mater. Sci. 16, 203 (1986); V. R. Almeida et al., Nature 431, 1081 (2004); and A. A. P. Pohl et al., Photonics Sens. 3, 1 (2013)]. Conventional switching devices rely on the electro-optical Pockels effect and work at radio frequencies. The ensuing gating time of several nanoseconds is a bottleneck for faster switches which is set by the performance of state-of-the-art high-voltage electronics. Here we show that by substituting the electric field of several kV/cm provided by modern electronics by the MV/cm field of a single-cycle THz laser pulse, the electro-optical gating process can be driven orders of magnitude faster, at THz frequencies. In this context, we introduce diamond as an exceptional electro-optical material and demonstrate a pulse gating time as fast as 100 fs using sub-cycle THz-induced Kerr nonlinearity. We show that THz-induced switching in the insulator diamond is fully governed by the THz pulse shape. The presented THz-based electro-optical approach overcomes the bandwidth and switching speed limits of conventional MHz/GHz electronics and establishes the ultrafast electro-optical gating technology for the first time in the THz frequency range. We finally show that the presented THz polarization gating technique is applicable for advanced beam diagnostics. As a first example, we demonstrate tomographic reconstruction of a THz pulse in three dimensions.

  8. Interface and thickness dependent domain switching and stability in Mg doped lithium niobate

    Energy Technology Data Exchange (ETDEWEB)

    Neumayer, Sabine M.; Rodriguez, Brian J., E-mail: gallo@kth.se, E-mail: brian.rodriguez@ucd.ie [School of Physics, University College Dublin, Belfield, Dublin 4 (Ireland); Conway Institute of Biomolecular and Biomedical Research, University College Dublin, Belfield, Dublin 4 (Ireland); Ivanov, Ilia N. [Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831 (United States); Manzo, Michele; Gallo, Katia, E-mail: gallo@kth.se, E-mail: brian.rodriguez@ucd.ie [Department of Applied Physics, KTH-Royal Institute of Technology, Roslagstullbacken 21, 10691 Stockholm (Sweden); Kholkin, Andrei L. [Department of Physics and CICECO-Aveiro Institute of Materials, 3810-193 Aveiro (Portugal); Institute of Natural Sciences, Ural Federal University, 620000 Ekaterinburg (Russian Federation)

    2015-12-14

    Controlling ferroelectric switching in Mg doped lithium niobate (Mg:LN) is of fundamental importance for optical device and domain wall electronics applications that require precise domain patterns. Stable ferroelectric switching has been previously observed in undoped LN layers above proton exchanged (PE) phases that exhibit reduced polarization, whereas PE layers have been found to inhibit lateral domain growth. Here, Mg doping, which is known to significantly alter ferroelectric switching properties including coercive field and switching currents, is shown to inhibit domain nucleation and stability in Mg:LN above buried PE phases that allow for precise ferroelectric patterning via domain growth control. Furthermore, piezoresponse force microscopy (PFM) and switching spectroscopy PFM reveal that the voltage at which polarization switches from the “up” to the “down” state increases with increasing thickness in pure Mg:LN, whereas the voltage required for stable back switching to the original “up” state does not exhibit this thickness dependence. This behavior is consistent with the presence of an internal frozen defect field. The inhibition of domain nucleation above PE interfaces, observed in this study, is a phenomenon that occurs in Mg:LN but not in undoped samples and is mainly ascribed to a remaining frozen polarization in the PE phase that opposes polarization reversal. This reduced frozen depolarization field in the PE phase also influences the depolarization field of the Mg:LN layer above due to the presence of uncompensated polarization charge at the PE-Mg:LN boundary. These alterations in internal electric fields within the sample cause long-range lattice distortions in Mg:LN via electromechanical coupling, which were corroborated with complimentary Raman measurements.

  9. Control synthesis of switched systems

    CERN Document Server

    Zhao, Xudong; Niu, Ben; Wu, Tingting

    2017-01-01

    This book offers its readers a detailed overview of the synthesis of switched systems, with a focus on switching stabilization and intelligent control. The problems investigated are not only previously unsolved theoretically but also of practical importance in many applications: voltage conversion, naval piloting and navigation and robotics, for example. The book considers general switched-system models and provides more efficient design methods to bring together theory and application more closely than was possible using classical methods. It also discusses several different classes of switched systems. For general switched linear systems and switched nonlinear systems comprising unstable subsystems, it introduces novel ideas such as invariant subspace theory and the time-scheduled Lyapunov function method of designing switching signals to stabilize the underlying systems. For some typical switched nonlinear systems affected by various complex dynamics, the book proposes novel design approaches based on inte...

  10. Investigating preferences for dynamic electricity tariffs: The effect of environmental and system benefit disclosure

    International Nuclear Information System (INIS)

    Buryk, Stephen; Mead, Doug; Mourato, Susana; Torriti, Jacopo

    2015-01-01

    Dynamic electricity pricing can produce efficiency gains in the electricity sector and help achieve energy policy goals such as increasing electric system reliability and supporting renewable energy deployment. Retail electric companies can offer dynamic pricing to residential electricity customers via smart meter-enabled tariffs that proxy the cost to procure electricity on the wholesale market. Current investments in the smart metering necessary to implement dynamic tariffs show policy makers’ resolve for enabling responsive demand and realizing its benefits. However, despite these benefits and the potential bill savings these tariffs can offer, adoption among residential customers remains at low levels. Using a choice experiment approach, this paper seeks to determine whether disclosing the environmental and system benefits of dynamic tariffs to residential customers can increase adoption. Although sampling and design issues preclude wide generalization, we found that our environmentally conscious respondents reduced their required discount to switch to dynamic tariffs around 10% in response to higher awareness of environmental and system benefits. The perception that shifting usage is easy to do also had a significant impact, indicating the potential importance of enabling technology. Perhaps the targeted communication strategy employed by this study is one way to increase adoption and achieve policy goals. - Highlights: • We evaluate preferences for domestic dynamic electricity tariffs in the US and EU. • We use an online choice experiment approach with two dynamic tariff options. • People are more likely to switch if shown environmental and system benefits. • People are more likely to switch if they find shifting demand easy to do. • Our results imply the importance of targeted communication and enabling technology

  11. Effects Of Environmental And Operational Stresses On RF MEMS Switch Technologies For Space Applications

    Science.gov (United States)

    Jah, Muzar; Simon, Eric; Sharma, Ashok

    2003-01-01

    Micro Electro Mechanical Systems (MEMS) have been heralded for their ability to provide tremendous advantages in electronic systems through increased electrical performance, reduced power consumption, and higher levels of device integration with a reduction of board real estate. RF MEMS switch technology offers advantages such as low insertion loss (0.1- 0.5 dB), wide bandwidth (1 GHz-100 GHz), and compatibility with many different process technologies (quartz, high resistivity Si, GaAs) which can replace the use of traditional electronic switches, such as GaAs FETS and PIN Diodes, in microwave systems for low signal power (x technologies, the unknown reliability, due to the lack of information concerning failure modes and mechanisms inherent to MEMS devices, create an obstacle to insertion of MEMS technology into high reliability applications. All MEMS devices are sensitive to moisture and contaminants, issues easily resolved by hermetic or near-hermetic packaging. Two well-known failure modes of RF MEMS switches are charging in the dielectric layer of capacitive membrane switches and contact interface stiction of metal-metal switches. Determining the integrity of MEMS devices when subjected to the shock, vibration, temperature extremes, and radiation of the space environment is necessary to facilitate integration into space systems. This paper will explore the effects of different environmental stresses, operational life cycling, temperature, mechanical shock, and vibration on the first commercially available RF MEMS switches to identify relevant failure modes and mechanisms inherent to these device and packaging schemes for space applications. This paper will also describe RF MEMS Switch technology under development at NASA GSFC.

  12. Low-Crosstalk Composite Optical Crosspoint Switches

    Science.gov (United States)

    Pan, Jing-Jong; Liang, Frank

    1993-01-01

    Composite optical switch includes two elementary optical switches in tandem, plus optical absorbers. Like elementary optical switches, composite optical switches assembled into switch matrix. Performance enhanced by increasing number of elementary switches. Advantage of concept: crosstalk reduced to acceptably low level at moderate cost of doubling number of elementary switches rather than at greater cost of tightening manufacturing tolerances and exerting more-precise control over operating conditions.

  13. Organization of the channel-switching process in parallel computer systems based on a matrix optical switch

    Science.gov (United States)

    Golomidov, Y. V.; Li, S. K.; Popov, S. A.; Smolov, V. B.

    1986-01-01

    After a classification and analysis of electronic and optoelectronic switching devices, the design principles and structure of a matrix optical switch is described. The switching and pair-exclusion operations in this type of switch are examined, and a method for the optical switching of communication channels is elaborated. Finally, attention is given to the structural organization of a parallel computer system with a matrix optical switch.

  14. Bianthrone in a Single-Molecule Junction: Conductance Switching with a Bistable Molecule Facilitated by Image Charge Effects

    DEFF Research Database (Denmark)

    Bjørnholm, Thomas

    2010-01-01

    Bianthrone is a sterically hindered compound that exists in the form of two nonplanar isomers. Our experimental study of single-molecule junctions with bianthrone reveals persistent switching of electric conductance at low temperatures, which can be reasonably associated with molecular isomerizat...

  15. Electrical studies of Ge4Sb1Te5 devices for memory applications

    Science.gov (United States)

    Sangeetha, B. G.; Shylashree, N.

    2018-05-01

    In this paper, the Ge4Sb1Te5 thin film device preparation and electrical studies for memory devices were carried out. The device was deposited using vapor-evaporation technique. RESET to SET state switching was shown using current-voltage characterization. The current-voltage characterization shows the switching between SET to RESET state and it was found that it requires a low energy for transition. Switching between amorphous to crystalline nature was studied using resistance-voltage characteristics. The endurance showed the effective use of this composition for memory device.

  16. MODERN ELECTRIC CARS OF TESLA MOTORS COMPANY

    Directory of Open Access Journals (Sweden)

    O. F. Vynakov

    2016-08-01

    Full Text Available This overview article shows the advantages of a modern electric car as compared with internal combustion cars by the example of the electric vehicles of Tesla Motors Company. It (в смысле- статья describes the history of this firm, provides technical and tactical characteristics of three modifications of electric vehicles produced by Tesla Motors. Modern electric cars are not less powerful than cars with combustion engines both in speed and acceleration amount. They are reliable, economical and safe in operation. With every year the maximum range of an electric car is increasing and its battery charging time is decreasing.Solving the problem of environmental safety, the governments of most countries are trying to encourage people to switch to electric cars by creating subsidy programs, lending and abolition of taxation. Therefore, the advent of an electric vehicle in all major cities of the world is inevitable.

  17. Reliability Assessment of Wind Farm Electrical System Based on a Probability Transfer Technique

    Directory of Open Access Journals (Sweden)

    Hejun Yang

    2018-03-01

    Full Text Available The electrical system of a wind farm has a significant influence on the wind farm reliability and electrical energy yield. The disconnect switch installed in an electrical system cannot only improve the operating flexibility, but also enhance the reliability for a wind farm. Therefore, this paper develops a probabilistic transfer technique for integrating the electrical topology structure, the isolation operation of disconnect switch, and stochastic failure of electrical equipment into the reliability assessment of wind farm electrical system. Firstly, as the traditional two-state reliability model of electrical equipment cannot consider the isolation operation, so the paper develops a three-state reliability model to replace the two-state model for incorporating the isolation operation. In addition, a proportion apportion technique is presented to evaluate the state probability. Secondly, this paper develops a probabilistic transfer technique based on the thoughts that through transfer the unreliability of electrical system to the energy transmission interruption of wind turbine generators (WTGs. Finally, some novel indices for describing the reliability of wind farm electrical system are designed, and the variance coefficient of the designed indices is used as a convergence criterion to determine the termination of the assessment process. The proposed technique is applied to the reliability assessment of a wind farm with the different topologies. The simulation results show that the proposed techniques are effective in practical applications.

  18. Electric-Field-Tunable Ferroelastic Control of Nonvolatile Resistivity and Ferromagnetic Switching in Multiferroic La0.67Ca0.33MnO3/[PbMg1/3Nb2/3O3] 0.7[PbTiO3]0.3 Heterostructures

    Science.gov (United States)

    Zheng, Ming; Zheng, Ren-Kui

    2016-04-01

    The electric-field-modulated nonvolatile resistivity and magnetization switching in elastically coupled La0.67Ca0.33MnO3 films grown on (111)-oriented 0.7 Pb (Mg1 /3Nb2 /3)O3-0.3 PbTiO3 substrates is achieved through the ferroelastic effect. By taking advantage of the 180° ferroelectric and non-180° ferroelastic domain switching, we identify that such changes in order parameters stem from domain-switching-induced strain rather than accumulation or depletion of charge carriers at the interface. Specifically, the strong correlation between the ferroelastic strain and the magnetic field is manifested not only by the strain-tunable magnetoresistance effect but also by the magnetically manipulated strain effect, which is essentially driven by the electronic phase separation. These findings present a potential strategy for elucidating the essential physics of the ferroelastic-strain effect and delivering prototype devices for energy-efficient and nonvolatile information storage.

  19. End-User Tools Towards AN Efficient Electricity Consumption: the Dynamic Smart Grid

    Science.gov (United States)

    Kamel, Fouad; Kist, Alexander A.

    2010-06-01

    Growing uncontrolled electrical demands have caused increased supply requirements. This causes volatile electrical markets and has detrimental unsustainable environmental impacts. The market is presently characterized by regular daily peak demand conditions associated with high electricity prices. A demand-side response system can limit peak demands to an acceptable level. The proposed scheme is based on energy demand and price information which is available online. An online server is used to communicate the information of electricity suppliers to users, who are able to use the information to manage and control their own demand. A configurable, intelligent switching system is used to control local loads during peak events and mange the loads at other times as necessary. The aim is to shift end user loads towards periods where energy demand and therefore also prices are at the lowest. As a result, this will flatten the load profile and avoiding load peeks which are costly for suppliers. The scheme is an endeavour towards achieving a dynamic smart grid demand-side-response environment using information-based communication and computer-controlled switching. Diffusing the scheme shall lead to improved electrical supply services and controlled energy consumption and prices.

  20. Very high plasma switches. Basic plasma physics and switch technology

    International Nuclear Information System (INIS)

    Doucet, H.J.; Roche, M.; Buzzi, J.M.

    1988-01-01

    A review of some high power switches recently developed for very high power technology is made with a special attention to the aspects of plasma physics involved in the mechanisms, which determine the limits of the possible switching parameters