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Sample records for efficiency silicon solar

  1. 24% efficient PERL structure silicon solar cells

    International Nuclear Information System (INIS)

    Zhao, J.; Wang, A.; Green, M.A.

    1990-01-01

    This paper reports that the performance of silicon solar cells have been significantly improved using an improved PERL (passivated emitter, rear locally-diffused) cell structure. This structure overcomes deficiencies in an earlier PERC (passivated emitter and rear cell) cell structure by locally diffusing boron into contact areas at the rear of the cells. Terrestrial energy conversion efficiencies up to 24% are reported for silicon cells for the first time. Air Mass O efficiencies approach 21%. The first batches of concentrator cells using the new structure have demonstrated significant improvement with 29% efficient concentrator silicon cells expected in the near future

  2. Efficiency Enhancement of Silicon Solar Cells by Porous Silicon Technology

    Directory of Open Access Journals (Sweden)

    Eugenijus SHATKOVSKIS

    2012-09-01

    Full Text Available Silicon solar cells produced by a usual technology in p-type, crystalline silicon wafer were investigated. The manufactured solar cells were of total thickness 450 mm, the junction depth was of 0.5 mm – 0.7 mm. Porous silicon technologies were adapted to enhance cell efficiency. The production of porous silicon layer was carried out in HF: ethanol = 1 : 2 volume ratio electrolytes, illuminating by 50 W halogen lamps at the time of processing. The etching current was computer-controlled in the limits of (6 ÷ 14 mA/cm2, etching time was set in the interval of (10 ÷ 20 s. The characteristics and performance of the solar cells samples was carried out illuminating by Xenon 5000 K lamp light. Current-voltage characteristic studies have shown that porous silicon structures produced affect the extent of dark and lighting parameters of the samples. Exactly it affects current-voltage characteristic and serial resistance of the cells. It has shown, the formation of porous silicon structure causes an increase in the electric power created of solar cell. Conversion efficiency increases also respectively to the initial efficiency of cell. Increase of solar cell maximum power in 15 or even more percent is found. The highest increase in power have been observed in the spectral range of Dl @ (450 ÷ 850 nm, where ~ 60 % of the A1.5 spectra solar energy is located. It has been demonstrated that porous silicon technology is effective tool to improve the silicon solar cells performance.DOI: http://dx.doi.org/10.5755/j01.ms.18.3.2428

  3. High-efficient solar cells with porous silicon

    International Nuclear Information System (INIS)

    Migunova, A.A.

    2002-01-01

    It has been shown that the porous silicon is multifunctional high-efficient coating on silicon solar cells, modifies its surface and combines in it self antireflection and passivation properties., The different optoelectronic effects in solar cells with porous silicon were considered. The comparative parameters of uncovered photodetectors also solar cells with porous silicon and other coatings were resulted. (author)

  4. Development of large area, high efficiency amorphous silicon solar cell

    Energy Technology Data Exchange (ETDEWEB)

    Yoon, K.S.; Kim, S.; Kim, D.W. [Yu Kong Taedok Institute of Technology (Korea, Republic of)

    1996-02-01

    The objective of the research is to develop the mass-production technologies of high efficiency amorphous silicon solar cells in order to reduce the costs of solar cells and dissemination of solar cells. Amorphous silicon solar cell is the most promising option of thin film solar cells which are relatively easy to reduce the costs. The final goal of the research is to develop amorphous silicon solar cells having the efficiency of 10%, the ratio of light-induced degradation 15% in the area of 1200 cm{sup 2} and test the cells in the form of 2 Kw grid-connected photovoltaic system. (author) 35 refs., 8 tabs., 67 figs.

  5. Process development for high-efficiency silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Gee, J.M.; Basore, P.A.; Buck, M.E.; Ruby, D.S.; Schubert, W.K.; Silva, B.L.; Tingley, J.W.

    1991-12-31

    Fabrication of high-efficiency silicon solar cells in an industrial environment requires a different optimization than in a laboratory environment. Strategies are presented for process development of high-efficiency silicon solar cells, with a goal of simplifying technology transfer into an industrial setting. The strategies emphasize the use of statistical experimental design for process optimization, and the use of baseline processes and cells for process monitoring and quality control. 8 refs.

  6. Simple processing of high efficiency silicon solar cells

    International Nuclear Information System (INIS)

    Hamammu, I.M.; Ibrahim, K.

    2006-01-01

    Cost effective photovoltaic devices have been an area research since the development of the first solar cells, as cost is the major factor in their usage. Silicon solar cells have the biggest share in the photovoltaic market, though silicon os not the optimal material for solar cells. This work introduces a simplified approach for high efficiency silicon solar cell processing, by minimizing the processing steps and thereby reducing cost. The suggested procedure might also allow for the usage of lower quality materials compared to the one used today. The main features of the present work fall into: simplifying the diffusion process, edge shunt isolation and using acidic texturing instead of the standard alkaline processing. Solar cells of 17% efficiency have been produced using this procedure. Investigations on the possibility of improving the efficiency and using less quality material are still underway

  7. High-efficiency concentrator silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Sinton, R.A.; Cuevas, A.; King, R.R.; Swanson, R.M. (Stanford Univ., CA (USA). Solid-State Electronics Lab.)

    1990-11-01

    This report presents results from extensive process development in high-efficiency Si solar cells. An advanced design for a 1.56-cm{sup 2} cell with front grids achieved 26% efficiency at 90 suns. This is especially significant since this cell does not require a prismatic cover glass. New designs for simplified backside-contact solar cells were advanced from a status of near-nonfunctionality to demonstrated 21--22% for one-sun cells in sizes up to 37.5 cm{sup 2}. An efficiency of 26% was achieved for similar 0.64-cm{sup 2} concentrator cells at 150 suns. More fundamental work on dopant-diffused regions is also presented here. The recombination vs. various process and physical parameters was studied in detail for boron and phosphorous diffusions. Emitter-design studies based solidly upon these new data indicate the performance vs design parameters for a variety of the cases of most interest to solar cell designers. Extractions of p-type bandgap narrowing and the surface recombination for p- and n-type regions from these studies have a generality that extends beyond solar cells into basic device modeling. 68 refs., 50 figs.

  8. Development of high efficiency solar cells on silicon web

    Science.gov (United States)

    Rohatgi, A.; Meier, D. L.; Campbell, R. B.; Schmidt, D. N.; Rai-Choudhury, P.

    1984-01-01

    Web base material is being improved with a goal toward obtaining solar cell efficiencies in excess of 18% (AM1). Carrier loss mechanisms in web silicon was investigated, techniques were developed to reduce carrier recombination in the web, and web cells were fabricated using effective surface passivation. The effect of stress on web cell performance was also investigated.

  9. Radiation hardened high efficiency silicon space solar cell

    International Nuclear Information System (INIS)

    Garboushian, V.; Yoon, S.; Turner, J.

    1993-01-01

    A silicon solar cell with AMO 19% Beginning of Life (BOL) efficiency is reported. The cell has demonstrated equal or better radiation resistance when compared to conventional silicon space solar cells. Conventional silicon space solar cell performance is generally ∼ 14% at BOL. The Radiation Hardened High Efficiency Silicon (RHHES) cell is thinned for high specific power (watts/kilogram). The RHHES space cell provides compatibility with automatic surface mounting technology. The cells can be easily combined to provide desired power levels and voltages. The RHHES space cell is more resistant to mechanical damage due to micrometeorites. Micro-meteorites which impinge upon conventional cells can crack the cell which, in turn, may cause string failure. The RHHES, operating in the same environment, can continue to function with a similar crack. The RHHES cell allows for very efficient thermal management which is essential for space cells generating higher specific power levels. The cell eliminates the need for electrical insulation layers which would otherwise increase the thermal resistance for conventional space panels. The RHHES cell can be applied to a space concentrator panel system without abandoning any of the attributes discussed. The power handling capability of the RHHES cell is approximately five times more than conventional space concentrator solar cells

  10. Increasing the efficiency of polymer solar cells by silicon nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Eisenhawer, B; Sivakov, V; Pietsch, M; Andrae, G; Falk, F [Institute of Photonic Technology, Albert-Einstein-Strasse 9, 07743 Jena (Germany); Sensfuss, S, E-mail: bjoern.eisenhawer@ipht-jena.de [Thuringian Institute for Textile and Plastics Research, Breitscheidstrasse 97, 07407 Rudolstadt (Germany)

    2011-08-05

    Silicon nanowires have been introduced into P3HT:[60]PCBM solar cells, resulting in hybrid organic/inorganic solar cells. A cell efficiency of 4.2% has been achieved, which is a relative improvement of 10% compared to a reference cell produced without nanowires. This increase in cell performance is possibly due to an enhancement of the electron transport properties imposed by the silicon nanowires. In this paper, we present a novel approach for introducing the nanowires by mixing them into the polymer blend and subsequently coating the polymer/nanowire blend onto a substrate. This new onset may represent a viable pathway to producing nanowire-enhanced polymer solar cells in a reel to reel process.

  11. Increasing the efficiency of polymer solar cells by silicon nanowires

    International Nuclear Information System (INIS)

    Eisenhawer, B; Sivakov, V; Pietsch, M; Andrae, G; Falk, F; Sensfuss, S

    2011-01-01

    Silicon nanowires have been introduced into P3HT:[60]PCBM solar cells, resulting in hybrid organic/inorganic solar cells. A cell efficiency of 4.2% has been achieved, which is a relative improvement of 10% compared to a reference cell produced without nanowires. This increase in cell performance is possibly due to an enhancement of the electron transport properties imposed by the silicon nanowires. In this paper, we present a novel approach for introducing the nanowires by mixing them into the polymer blend and subsequently coating the polymer/nanowire blend onto a substrate. This new onset may represent a viable pathway to producing nanowire-enhanced polymer solar cells in a reel to reel process.

  12. Development of high-efficiency solar cells on silicon web

    Science.gov (United States)

    Meier, D. L.; Greggi, J.; Okeeffe, T. W.; Rai-Choudhury, P.

    1986-01-01

    Work was performed to improve web base material with a goal of obtaining solar cell efficiencies in excess of 18% (AM1). Efforts in this program are directed toward identifying carrier loss mechanisms in web silicon, eliminating or reducing these mechanisms, designing a high efficiency cell structure with the aid of numerical models, and fabricating high efficiency web solar cells. Fabrication techniques must preserve or enhance carrier lifetime in the bulk of the cell and minimize recombination of carriers at the external surfaces. Three completed cells were viewed by cross-sectional transmission electron microscopy (TEM) in order to investigate further the relation between structural defects and electrical performance of web cells. Consistent with past TEM examinations, the cell with the highest efficiency (15.0%) had no dislocations but did have 11 twin planes.

  13. Impurity effects in silicon for high efficiency solar cells

    Science.gov (United States)

    Hopkins, R. H.; Rohatgi, A.

    1986-01-01

    Model analyses indicate that sophisticated solar cell designs including, e.g., back surface fields, optical reflectors, surface passivation, and double layer antireflective coatings can produce devices with conversion efficiencies above 20 percent (AM1). To realize this potential, the quality of the silicon from which the cells are made must be improved; and these excellent electrical properties must be maintained during device processing. As the cell efficiency rises, the sensitivity to trace contaminants also increases. For example, the threshold Ti impurity concentration at which cell performance degrades is more than an order of magnitude lower for an 18-percent cell. Similar behavior occurs for numerous other metal species which introduce deep level traps that stimulate the recombination of photogenerated carriers in silicon. Purification via crystal growth in conjunction with gettering steps to preserve the large diffusion length of the as-grown material can lead to the production of devices with efficiencies aboved 18 percent, as has been verified experimentally.

  14. The status of silicon ribbon growth technology for high-efficiency silicon solar cells

    Science.gov (United States)

    Ciszek, T. F.

    1985-01-01

    More than a dozen methods have been applied to the growth of silicon ribbons, beginning as early as 1963. The ribbon geometry has been particularly intriguing for photovoltaic applications, because it might provide large area, damage free, nearly continuous substrates without the material loss or cost of ingot wafering. In general, the efficiency of silicon ribbon solar cells has been lower than that of ingot cells. The status of some ribbon growth techniques that have achieved laboratory efficiencies greater than 13.5% are reviewed, i.e., edge-defined, film-fed growth (EFG), edge-supported pulling (ESP), ribbon against a drop (RAD), and dendritic web growth (web).

  15. Thin silicon foils produced by epoxy-induced spalling of silicon for high efficiency solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Martini, R., E-mail: roberto.martini@imec.be [Department of Electrical Engineering, KU Leuven, Kasteelpark 10, 3001 Leuven (Belgium); imec, Kapeldreef 75, 3001 Leuven (Belgium); Kepa, J.; Stesmans, A. [Department of Physics, KU Leuven, Celestijnenlaan 200 D, 3001 Leuven (Belgium); Debucquoy, M.; Depauw, V.; Gonzalez, M.; Gordon, I. [imec, Kapeldreef 75, 3001 Leuven (Belgium); Poortmans, J. [Department of Electrical Engineering, KU Leuven, Kasteelpark 10, 3001 Leuven (Belgium); imec, Kapeldreef 75, 3001 Leuven (Belgium); Universiteit Hasselt, Martelarenlaan 42, B-3500 Hasselt (Belgium)

    2014-10-27

    We report on the drastic improvement of the quality of thin silicon foils produced by epoxy-induced spalling. In the past, researchers have proposed to fabricate silicon foils by spalling silicon substrates with different stress-inducing materials to manufacture thin silicon solar cells. However, the reported values of effective minority carrier lifetime of the fabricated foils remained always limited to ∼100 μs or below. In this work, we investigate epoxy-induced exfoliated foils by electron spin resonance to analyze the limiting factors of the minority carrier lifetime. These measurements highlight the presence of disordered dangling bonds and dislocation-like defects generated by the exfoliation process. A solution to remove these defects compatible with the process flow to fabricate solar cells is proposed. After etching off less than 1 μm of material, the lifetime of the foil increases by more than a factor of 4.5, reaching a value of 461 μs. This corresponds to a lower limit of the diffusion length of more than 7 times the foil thickness. Regions with different lifetime correlate well with the roughness of the crack surface which suggests that the lifetime is now limited by the quality of the passivation of rough surfaces. The reported values of the minority carrier lifetime show a potential for high efficiency (>22%) thin silicon solar cells.

  16. Thin silicon foils produced by epoxy-induced spalling of silicon for high efficiency solar cells

    International Nuclear Information System (INIS)

    Martini, R.; Kepa, J.; Stesmans, A.; Debucquoy, M.; Depauw, V.; Gonzalez, M.; Gordon, I.; Poortmans, J.

    2014-01-01

    We report on the drastic improvement of the quality of thin silicon foils produced by epoxy-induced spalling. In the past, researchers have proposed to fabricate silicon foils by spalling silicon substrates with different stress-inducing materials to manufacture thin silicon solar cells. However, the reported values of effective minority carrier lifetime of the fabricated foils remained always limited to ∼100 μs or below. In this work, we investigate epoxy-induced exfoliated foils by electron spin resonance to analyze the limiting factors of the minority carrier lifetime. These measurements highlight the presence of disordered dangling bonds and dislocation-like defects generated by the exfoliation process. A solution to remove these defects compatible with the process flow to fabricate solar cells is proposed. After etching off less than 1 μm of material, the lifetime of the foil increases by more than a factor of 4.5, reaching a value of 461 μs. This corresponds to a lower limit of the diffusion length of more than 7 times the foil thickness. Regions with different lifetime correlate well with the roughness of the crack surface which suggests that the lifetime is now limited by the quality of the passivation of rough surfaces. The reported values of the minority carrier lifetime show a potential for high efficiency (>22%) thin silicon solar cells.

  17. Using silicon nanostructures for the improvement of silicon solar cells' efficiency

    International Nuclear Information System (INIS)

    Torre, J. de la; Bremond, G.; Lemiti, M.; Guillot, G.; Mur, P.; Buffet, N.

    2006-01-01

    Silicon nanostructures (ns-Si) show interesting optical and electrical properties as a result of the band gap widening caused by quantum confinement effects. Along with their potential utilization for silicon-based light emitters' fabrication, they could also represent an appealing option for the improvement of energy conversion efficiency in silicon-based solar cells whether by using their luminescence properties (photon down-conversion) or the excess photocurrent produced by an improved high-energy photon's absorption. In this work, we report on the morphological and optical studies of non-stoichiometric silica (SiO x ) and silicon nitride (SiN x ) layers containing silicon nanostructures (ns-Si) in view of their application for solar cell's efficiency improvement. The morphological studies of the samples performed by transmission electron microscopy (TEM) unambiguously show the presence of ns-Si in a crystalline form for high temperature-annealed SiO x layers and for low temperature deposition of SiN x layers. The photoluminescence emission (PL) shows a rather high efficiency in both kind of layers with an intensity of only a factor ∼ 100 lower than that of porous silicon (pi-Si). The photocurrent spectroscopy (PC) shows a significant increase of absorption at high photon energy excitation most probably related to photon absorption within ns-Si quantized states. Moreover, the absorption characteristics obtained from PC spectra show a good agreement with the PL emission states unambiguously demonstrating a same origin, related to Q-confined excitons within ns-Si. Finally, the major asset of this material is the possibility to incorporate it to solar cells manufacturing processing for an insignificant cost

  18. High Efficiency, Low Cost Solar Cells Manufactured Using 'Silicon Ink' on Thin Crystalline Silicon Wafers

    Energy Technology Data Exchange (ETDEWEB)

    Antoniadis, H.

    2011-03-01

    Reported are the development and demonstration of a 17% efficient 25mm x 25mm crystalline Silicon solar cell and a 16% efficient 125mm x 125mm crystalline Silicon solar cell, both produced by Ink-jet printing Silicon Ink on a thin crystalline Silicon wafer. To achieve these objectives, processing approaches were developed to print the Silicon Ink in a predetermined pattern to form a high efficiency selective emitter, remove the solvents in the Silicon Ink and fuse the deposited particle Silicon films. Additionally, standard solar cell manufacturing equipment with slightly modified processes were used to complete the fabrication of the Silicon Ink high efficiency solar cells. Also reported are the development and demonstration of a 18.5% efficient 125mm x 125mm monocrystalline Silicon cell, and a 17% efficient 125mm x 125mm multicrystalline Silicon cell, by utilizing high throughput Ink-jet and screen printing technologies. To achieve these objectives, Innovalight developed new high throughput processing tools to print and fuse both p and n type particle Silicon Inks in a predetermined pat-tern applied either on the front or the back of the cell. Additionally, a customized Ink-jet and screen printing systems, coupled with customized substrate handling solution, customized printing algorithms, and a customized ink drying process, in combination with a purchased turn-key line, were used to complete the high efficiency solar cells. This development work delivered a process capable of high volume producing 18.5% efficient crystalline Silicon solar cells and enabled the Innovalight to commercialize its technology by the summer of 2010.

  19. Materials and Light Management for High-Efficiency Thin-Film Silicon Solar Cells

    OpenAIRE

    Tan, H.

    2015-01-01

    Direct conversion of sunlight into electricity is one of the most promising approaches to provide sufficient renewable energy for humankind. Solar cells are such devices which can efficiently generate electricity from sunlight through the photovoltaic effect. Thin-film silicon solar cells, a type of photovoltaic (PV) devices which deploy the chemical-vapor-deposited hydrogenated amorphous silicon (a-Si:H) and nanocrystalline silicon (nc-Si:H) and their alloys as the absorber layers and doped ...

  20. Front buried metallic contacts and thin porous silicon combination for efficient polycrystalline silicon solar cells

    International Nuclear Information System (INIS)

    Ben Rabha, M.; Boujmil, M.F.; Meddeb, N.; Saadoun, M.; Bessais, B.

    2006-01-01

    We investigate the impacts of achieving buried grid metallic contacts (BGMC), with and without application of a front porous silicon (PS) layer, on the photovoltaic properties of polycrystalline silicon (pc-Si) solar cells. A grooving method based on Chemical Vapor Etching (CVE) was used to perform buried grid contacts on the emitter of pc-Si solar cells. After realizing the n + /p junction using a phosphorus diffusion source, BGMCs were realized using the screen printing technique. We found that the buried metallic contacts improve the short circuit current from 16 mA/cm 2 (for reference cell without buried contacts) to about 19 mA/cm 2 . After application of a front PS layer on the n + emitter, we observe an enhancement of the short circuit current from 19 to 24 mA/cm 2 with a decrease of the reflectivity by about 40% of its initial value. The dark I-V characteristics of the pc-Si cells with PS-based emitter show an important reduction of the reverse current together with an improvement of the rectifying behaviour. Spectral response measurements performed at a wavelength range of 400-1100 nm showed a significant increase in the quantum efficiency, particularly at shorter wavelength (400-650 nm). These results indicate that the BGMCs improve the carrier collection and that the PS layer acts as an antireflective coating that reduces reflection losses and passivates the front surface. This low cost and simple technology based on the CVE technique could enable preparing efficient polycrystalline silicon solar cells

  1. 22.5% efficient silicon heterojunction solar cell with molybdenum oxide hole collector

    Energy Technology Data Exchange (ETDEWEB)

    Geissbühler, Jonas, E-mail: jonas.geissbuehler@epfl.ch; Werner, Jérémie; Martin de Nicolas, Silvia; Hessler-Wyser, Aïcha; Tomasi, Andrea; Niesen, Bjoern; De Wolf, Stefaan [Photovoltaics and Thin Film Electronics Laboratory, Institute of Microengineering (IMT), École Polytechnique Fédérale de Lausanne (EPFL), Rue de la Maladière 71b, CH-2000 Neuchâtel (Switzerland); Barraud, Loris; Despeisse, Matthieu; Nicolay, Sylvain [CSEM PV-Center, Jaquet-Droz 1, CH-2000 Neuchâtel (Switzerland); Ballif, Christophe [Photovoltaics and Thin Film Electronics Laboratory, Institute of Microengineering (IMT), École Polytechnique Fédérale de Lausanne (EPFL), Rue de la Maladière 71b, CH-2000 Neuchâtel (Switzerland); CSEM PV-Center, Jaquet-Droz 1, CH-2000 Neuchâtel (Switzerland)

    2015-08-24

    Substituting the doped amorphous silicon films at the front of silicon heterojunction solar cells with wide-bandgap transition metal oxides can mitigate parasitic light absorption losses. This was recently proven by replacing p-type amorphous silicon with molybdenum oxide films. In this article, we evidence that annealing above 130 °C—often needed for the curing of printed metal contacts—detrimentally impacts hole collection of such devices. We circumvent this issue by using electrodeposited copper front metallization and demonstrate a silicon heterojunction solar cell with molybdenum oxide hole collector, featuring a fill factor value higher than 80% and certified energy conversion efficiency of 22.5%.

  2. Crystal growth for high-efficiency silicon solar cells workshop: Summary

    Science.gov (United States)

    Dumas, K. A.

    1985-01-01

    The state of the art in the growth of silicon crystals for high-efficiency solar cells are reviewed, sheet requirements are defined, and furture areas of research are identified. Silicon sheet material characteristics that limit cell efficiencies and yields were described as well as the criteria for the ideal sheet-growth method. The device engineers wish list to the material engineer included: silicon sheet with long minority carrier lifetime that is uniform throughout the sheet, and which doesn't change during processing; and sheet material that stays flat throughout device processing, has uniform good mechanical strength, and is low cost. Impurities in silicon solar cells depreciate cell performance by reducing diffusion length and degrading junctions. The impurity behavior, degradation mechanisms, and variations in degradation threshold with diffusion length for silicon solar cells were described.

  3. Silicon-Light: a European FP7 Project Aiming at High Efficiency Thin Film Silicon Solar Cells on Foil

    DEFF Research Database (Denmark)

    Soppe, W.; Haug, F.-J.; Couty, P.

    2011-01-01

    Silicon-Light is a European FP7 project, which started January 1st, 2010 and aims at development of low cost, high-efficiency thin film silicon solar cells on foil. Three main routes are explored to achieve these goals: a) advanced light trapping by implementing nanotexturization through UV Nano...... calculations of ideal nanotextures for light trapping in thin film silicon solar cells; the fabrication of masters and the replication and roll-to-roll fabrication of these nanotextures. Further, results on ITO variants with improved work function are presented. Finally, the status of cell fabrication on foils...

  4. Black silicon laser-doped selective emitter solar cell with 18.1% efficiency

    DEFF Research Database (Denmark)

    Davidsen, Rasmus Schmidt; Li, Hongzhao; To, Alexander

    2016-01-01

    We report fabrication of nanostructured, laser-doped selective emitter (LDSE) silicon solar cells with power conversion efficiency of 18.1% and a fill factor (FF) of 80.1%. The nanostructured solar cells were realized through a single step, mask-less, scalable reactive ion etch (RIE) texturing......-texturing as well as the LDSE process, we consider this specific combination a promising candidate for a cost-efficient process for future Si solar cells....

  5. Materials and Light Management for High-Efficiency Thin-Film Silicon Solar Cells

    NARCIS (Netherlands)

    Tan, H.

    2015-01-01

    Direct conversion of sunlight into electricity is one of the most promising approaches to provide sufficient renewable energy for humankind. Solar cells are such devices which can efficiently generate electricity from sunlight through the photovoltaic effect. Thin-film silicon solar cells, a type of

  6. III-V-on-silicon solar cells reaching 33% photoconversion efficiency in two-terminal configuration

    Science.gov (United States)

    Cariou, Romain; Benick, Jan; Feldmann, Frank; Höhn, Oliver; Hauser, Hubert; Beutel, Paul; Razek, Nasser; Wimplinger, Markus; Bläsi, Benedikt; Lackner, David; Hermle, Martin; Siefer, Gerald; Glunz, Stefan W.; Bett, Andreas W.; Dimroth, Frank

    2018-04-01

    Silicon dominates the photovoltaic industry but the conversion efficiency of silicon single-junction solar cells is intrinsically constrained to 29.4%, and practically limited to around 27%. It is possible to overcome this limit by combining silicon with high-bandgap materials, such as III-V semiconductors, in a multi-junction device. Significant challenges associated with this material combination have hindered the development of highly efficient III-V/Si solar cells. Here, we demonstrate a III-V/Si cell reaching similar performances to standard III-V/Ge triple-junction solar cells. This device is fabricated using wafer bonding to permanently join a GaInP/GaAs top cell with a silicon bottom cell. The key issues of III-V/Si interface recombination and silicon's weak absorption are addressed using poly-silicon/SiOx passivating contacts and a novel rear-side diffraction grating for the silicon bottom cell. With these combined features, we demonstrate a two-terminal GaInP/GaAs//Si solar cell reaching a 1-sun AM1.5G conversion efficiency of 33.3%.

  7. Performance of conversion efficiency of a crystalline silicon solar cell with base doping density

    Directory of Open Access Journals (Sweden)

    Gokhan Sahin

    Full Text Available In this study, we investigate theoretically the electrical parameters of a crystalline silicon solar cell in steady state. Based on a one-dimensional modeling of the cell, the short circuit current density, the open circuit voltage, the shunt and series resistances and the conversion efficiency are calculated, taking into account the base doping density. Either the I-V characteristic, series resistance, shunt resistance and conversion efficiency are determined and studied versus base doping density. The effects applied of base doping density on these parameters have been studied. The aim of this work is to show how short circuit current density, open circuit voltage and parasitic resistances are related to the base doping density and to exhibit the role played by those parasitic resistances on the conversion efficiency of the crystalline silicon solar. Keywords: Crystalline silicon solar cell, Base doping density, Series resistance, Shunt resistance, Conversion efficiency

  8. Effect of thickness on silicon solar cell efficiency

    Science.gov (United States)

    Sah, C.-T.; Yamakawa, K. A.; Lutwack, R.

    1982-01-01

    A computer-aided-design study on the dependence of the efficiency peak of a back-surface field solar cell on the concentrations of the recombination and dopant impurities is presented. The illuminated current-voltage characteristics of more than 100 cell designs are obtained using the transmission line circuit model to numerically solve the Shockley equations. Using an AM 1 efficiency of 17% as a target value, it is shown that the efficiency versus thickness dependence has a broad maximum which varies by less than 1% over more than a three-to-one range of cell thicknesses from 30 to 100 microns. An optically reflecting back surface will give only a slight improvement of AM 1 efficiency, about 0.7%, in this thickness range. Attention is given to the dependence of the efficiency on patchiness across the back-surface field low-high junction in thin cells.

  9. Engineered porous silicon counter electrodes for high efficiency dye-sensitized solar cells.

    Science.gov (United States)

    Erwin, William R; Oakes, Landon; Chatterjee, Shahana; Zarick, Holly F; Pint, Cary L; Bardhan, Rizia

    2014-06-25

    In this work, we demonstrate for the first time, the use of porous silicon (P-Si) as counter electrodes in dye-sensitized solar cells (DSSCs) with efficiencies (5.38%) comparable to that achieved with platinum counter electrodes (5.80%). To activate the P-Si for triiodide reduction, few layer carbon passivation is utilized to enable electrochemical stability of the silicon surface. Our results suggest porous silicon as a promising sustainable and manufacturable alternative to rare metals for electrochemical solar cells, following appropriate surface modification.

  10. Corrugation Architecture Enabled Ultraflexible Wafer-Scale High-Efficiency Monocrystalline Silicon Solar Cell

    KAUST Repository

    Bahabry, Rabab R.

    2018-01-02

    Advanced classes of modern application require new generation of versatile solar cells showcasing extreme mechanical resilience, large-scale, low cost, and excellent power conversion efficiency. Conventional crystalline silicon-based solar cells offer one of the most highly efficient power sources, but a key challenge remains to attain mechanical resilience while preserving electrical performance. A complementary metal oxide semiconductor-based integration strategy where corrugation architecture enables ultraflexible and low-cost solar cell modules from bulk monocrystalline large-scale (127 × 127 cm) silicon solar wafers with a 17% power conversion efficiency. This periodic corrugated array benefits from an interchangeable solar cell segmentation scheme which preserves the active silicon thickness of 240 μm and achieves flexibility via interdigitated back contacts. These cells can reversibly withstand high mechanical stress and can be deformed to zigzag and bifacial modules. These corrugation silicon-based solar cells offer ultraflexibility with high stability over 1000 bending cycles including convex and concave bending to broaden the application spectrum. Finally, the smallest bending radius of curvature lower than 140 μm of the back contacts is shown that carries the solar cells segments.

  11. Corrugation Architecture Enabled Ultraflexible Wafer-Scale High-Efficiency Monocrystalline Silicon Solar Cell

    KAUST Repository

    Bahabry, Rabab R.; Kutbee, Arwa T.; Khan, Sherjeel M.; Sepulveda, Adrian C.; Wicaksono, Irmandy; Nour, Maha A.; Wehbe, Nimer; Almislem, Amani Saleh Saad; Ghoneim, Mohamed T.; Sevilla, Galo T.; Syed, Ahad; Shaikh, Sohail F.; Hussain, Muhammad Mustafa

    2018-01-01

    Advanced classes of modern application require new generation of versatile solar cells showcasing extreme mechanical resilience, large-scale, low cost, and excellent power conversion efficiency. Conventional crystalline silicon-based solar cells offer one of the most highly efficient power sources, but a key challenge remains to attain mechanical resilience while preserving electrical performance. A complementary metal oxide semiconductor-based integration strategy where corrugation architecture enables ultraflexible and low-cost solar cell modules from bulk monocrystalline large-scale (127 × 127 cm) silicon solar wafers with a 17% power conversion efficiency. This periodic corrugated array benefits from an interchangeable solar cell segmentation scheme which preserves the active silicon thickness of 240 μm and achieves flexibility via interdigitated back contacts. These cells can reversibly withstand high mechanical stress and can be deformed to zigzag and bifacial modules. These corrugation silicon-based solar cells offer ultraflexibility with high stability over 1000 bending cycles including convex and concave bending to broaden the application spectrum. Finally, the smallest bending radius of curvature lower than 140 μm of the back contacts is shown that carries the solar cells segments.

  12. Increasing the efficiency of silicon heterojunction solar cells and modules by light soaking

    KAUST Repository

    Kobayashi, Eiji; De Wolf, Stefaan; Levrat, Jacques; Descoeudres, Antoine; Despeisse, Matthieu; Haug, Franz-Josef; Ballif, Christophe

    2017-01-01

    Silicon heterojunction solar cells use crystalline silicon (c-Si) wafers as optical absorbers and employ bilayers of doped/intrinsic hydrogenated amorphous silicon (a-Si:H) to form passivating contacts. Recently, we demonstrated that such solar

  13. Fundamental understanding and development of low-cost, high-efficiency silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    ROHATGI,A.; NARASIMHA,S.; MOSCHER,J.; EBONG,A.; KAMRA,S.; KRYGOWSKI,T.; DOSHI,P.; RISTOW,A.; YELUNDUR,V.; RUBY,DOUGLAS S.

    2000-05-01

    The overall objectives of this program are (1) to develop rapid and low-cost processes for manufacturing that can improve yield, throughput, and performance of silicon photovoltaic devices, (2) to design and fabricate high-efficiency solar cells on promising low-cost materials, and (3) to improve the fundamental understanding of advanced photovoltaic devices. Several rapid and potentially low-cost technologies are described in this report that were developed and applied toward the fabrication of high-efficiency silicon solar cells.

  14. Review of status developments of high-efficiency crystalline silicon solar cells

    Science.gov (United States)

    Liu, Jingjing; Yao, Yao; Xiao, Shaoqing; Gu, Xiaofeng

    2018-03-01

    In order to further improve cell efficiency and reduce cost in achieving grid parity, a large number of PV manufacturing companies, universities and research institutes have been devoted to a variety of low-cost and high-efficiency crystalline Si solar cells. In this article, the cell structures, characteristics and efficiency progresses of several types of high-efficiency crystalline Si solar cells that have been in small scale production or are promising in mass production are presented, including passivated emitter rear cell, tunnel oxide passivated contact solar cell, interdigitated back contact cell, heterojunction with intrinsic thin-layer cell, and heterojunction solar cells with interdigitated back contacts. Both the industrialization status and future development trend of high-efficiency crystalline silicon solar cells are also pinpointed.

  15. Lanthanide-Doped Ceria Nanoparticles as Backside Coaters to Improve Silicon Solar Cell Efficiency.

    Science.gov (United States)

    Hajjiah, Ali; Samir, Effat; Shehata, Nader; Salah, Mohamed

    2018-05-23

    This paper introduces lanthanide-doped ceria nanoparticles as silicon solar cell back-side coaters, showing their influence on the solar cell efficiency. Ceria nanoparticles can be synthesized to have formed oxygen vacancies (O-vacancies), which are associated with converting cerium ions from the Ce 4+ state ions to the Ce 3+ ones. These O-vacancies follow the rule of improving silicon solar cell conductivity through a hopping mechanism. Besides, under near-ultra violet (near-UV) excitation, the reduced trivalent cerium Ce 3+ ions are directly responsible for down converting the un-absorbed UV wavelengths to a resultant green photo-luminescence emission at ~520 nm, which is absorbed through the silicon solar cell’s active layer. Adding lanthanide elements such as Neodymium “Nd” as ceria nanoparticle dopants helps in forming extra oxygen vacancies (O-vacancies), followed by an increase in the number of Ce 4+ to Ce 3+ ion reductions, thus enhancing the conductivity and photoluminescence down conversion mechanisms. After introducing lanthanide-doped ceria nanoparticles on a silicon solar cell surface, a promising enhancement in the behavior of the solar cell current-voltage curve is observed, and the efficiency is improved by about 25% of its initial value due to the mutual impact of improving both electric conductivity and optical conversions.

  16. Towards ultra-thin plasmonic silicon wafer solar cells with minimized efficiency loss.

    Science.gov (United States)

    Zhang, Yinan; Stokes, Nicholas; Jia, Baohua; Fan, Shanhui; Gu, Min

    2014-05-13

    The cost-effectiveness of market-dominating silicon wafer solar cells plays a key role in determining the competiveness of solar energy with other exhaustible energy sources. Reducing the silicon wafer thickness at a minimized efficiency loss represents a mainstream trend in increasing the cost-effectiveness of wafer-based solar cells. In this paper we demonstrate that, using the advanced light trapping strategy with a properly designed nanoparticle architecture, the wafer thickness can be dramatically reduced to only around 1/10 of the current thickness (180 μm) without any solar cell efficiency loss at 18.2%. Nanoparticle integrated ultra-thin solar cells with only 3% of the current wafer thickness can potentially achieve 15.3% efficiency combining the absorption enhancement with the benefit of thinner wafer induced open circuit voltage increase. This represents a 97% material saving with only 15% relative efficiency loss. These results demonstrate the feasibility and prospect of achieving high-efficiency ultra-thin silicon wafer cells with plasmonic light trapping.

  17. Industrially feasible, dopant-free, carrier-selective contacts for high-efficiency silicon solar cells

    KAUST Repository

    Yang, Xinbo; Weber, Klaus; Hameiri, Ziv; De Wolf, Stefaan

    2017-01-01

    quality and cell processing, a remarkable efficiency of 22.1% has been achieved using an n-type silicon solar cell featuring a full-area TiO contact. Next, we demonstrate the compatibility of TiO contacts with an industrial contact-firing process, its low

  18. Industrially feasible, dopant-free, carrier-selective contacts for high-efficiency silicon solar cells

    KAUST Repository

    Yang, Xinbo

    2017-05-31

    Dopant-free, carrier-selective contacts (CSCs) on high efficiency silicon solar cells combine ease of deposition with potential optical benefits. Electron-selective titanium dioxide (TiO) contacts, one of the most promising dopant-free CSC technologies, have been successfully implemented into silicon solar cells with an efficiency over 21%. Here, we report further progress of TiO contacts for silicon solar cells and present an assessment of their industrial feasibility. With improved TiO contact quality and cell processing, a remarkable efficiency of 22.1% has been achieved using an n-type silicon solar cell featuring a full-area TiO contact. Next, we demonstrate the compatibility of TiO contacts with an industrial contact-firing process, its low performance sensitivity to the wafer resistivity, its applicability to ultrathin substrates as well as its long-term stability. Our findings underscore the great appeal of TiO contacts for industrial implementation with their combination of high efficiency with robust fabrication at low cost.

  19. Enhancing the Efficiency of Silicon-Based Solar Cells by the Piezo-Phototronic Effect.

    Science.gov (United States)

    Zhu, Laipan; Wang, Longfei; Pan, Caofeng; Chen, Libo; Xue, Fei; Chen, Baodong; Yang, Leijing; Su, Li; Wang, Zhong Lin

    2017-02-28

    Although there are numerous approaches for fabricating solar cells, the silicon-based photovoltaics are still the most widely used in industry and around the world. A small increase in the efficiency of silicon-based solar cells has a huge economic impact and practical importance. We fabricate a silicon-based nanoheterostructure (p + -Si/p-Si/n + -Si (and n-Si)/n-ZnO nanowire (NW) array) photovoltaic device and demonstrate the enhanced device performance through significantly enhanced light absorption by NW array and effective charge carrier separation by the piezo-phototronic effect. The strain-induced piezoelectric polarization charges created at n-doped Si-ZnO interfaces can effectively modulate the corresponding band structure and electron gas trapped in the n + -Si/n-ZnO NW nanoheterostructure and thus enhance the transport process of local charge carriers. The efficiency of the solar cell was improved from 8.97% to 9.51% by simply applying a static compress strain. This study indicates that the piezo-phototronic effect can enhance the performance of a large-scale silicon-based solar cell, with great potential for industrial applications.

  20. Heavy doping effects in high efficiency silicon solar cells

    Science.gov (United States)

    Lindholm, F. A.; Neugroschel, A.

    1986-01-01

    The temperature dependence of the emitter saturation current for bipolar devices was studied by varying the surface recombination velocity at the emitter surface. From this dependence, the value was derived for bandgap narrowing that is in better agreement with other determinations that were obtained from the temperature dependence measure on devices with ohmic contacts. Results of the first direct measurement of the minority-carrier transit time in a transparent heavily doped emitter layer were reported. The value was obtained by a high-frequency conductance method recently developed and used for doped Si. Experimental evidence is presented for significantly greater charge storage in highly excited silicon near room temperature than conventional theory would predict. These data are compared with various data for delta E sub G in heavily doped silicon.

  1. Proceedings of the Flat-Plate Solar Array Project Workshop on Crystal Gowth for High-Efficiency Silicon Solar Cells

    Science.gov (United States)

    Dumas, K. A. (Editor)

    1985-01-01

    A Workshop on Crystal Growth for High-Efficiency Silicon Solar Cells was held December 3 and 4, 1984, in San Diego, California. The Workshop offered a day and a half of technical presentations and discussions and an afternoon session that involved a panel discussion and general discussion of areas of research that are necessary to the development of materials for high-efficiency solar cells. Topics included the theoretical and experimental aspects of growing high-quality silicon crystals, the effects of growth-process-related defects on photovoltaic devices, and the suitability of various growth technologies as cost-effective processes. Fifteen invited papers were presented, with a discussion period following each presentation. The meeting was organized by the Flat-Plate Solar Array Project of the Jet Propulsion Laboratory. These Proceedings are a record of the presentations and discussions, edited for clarity and continuity.

  2. Upgraded metallurgical-grade silicon solar cells with efficiency above 20%

    Energy Technology Data Exchange (ETDEWEB)

    Zheng, P.; Rougieux, F. E.; Samundsett, C.; Yang, Xinbo; Wan, Yimao; Macdonald, D. [Research School of Engineering, College of Engineering and Computer Science, The Australian National University, Canberra, Australian Capital Terrritory 2601 (Australia); Degoulange, J.; Einhaus, R. [Apollon Solar, 66 Cours Charlemagne, Lyon 69002 (France); Rivat, P. [FerroPem, 517 Avenue de la Boisse, Chambery Cedex 73025 (France)

    2016-03-21

    We present solar cells fabricated with n-type Czochralski–silicon wafers grown with strongly compensated 100% upgraded metallurgical-grade feedstock, with efficiencies above 20%. The cells have a passivated boron-diffused front surface, and a rear locally phosphorus-diffused structure fabricated using an etch-back process. The local heavy phosphorus diffusion on the rear helps to maintain a high bulk lifetime in the substrates via phosphorus gettering, whilst also reducing recombination under the rear-side metal contacts. The independently measured results yield a peak efficiency of 20.9% for the best upgraded metallurgical-grade silicon cell and 21.9% for a control device made with electronic-grade float-zone silicon. The presence of boron-oxygen related defects in the cells is also investigated, and we confirm that these defects can be partially deactivated permanently by annealing under illumination.

  3. High-efficiency amorphous silicon solar cell on a periodic nanocone back reflector

    Energy Technology Data Exchange (ETDEWEB)

    Hsu, Ching-Mei; Cui, Yi [Department of Materials Science and Engineering, Durand Building, 496 Lomita Mall, Stanford University, Stanford, CA 94305-4034 (United States); Battaglia, Corsin; Pahud, Celine; Haug, Franz-Josef; Ballif, Christophe [Ecole Polytechnique Federale de Lausanne (EPFL), Institute of Microengineering (IMT), Photovoltaics and Thin Film Electronics Laboratory, Rue Breguet 2, 2000 Neuchatel (Switzerland); Ruan, Zhichao; Fan, Shanhui [Department of Electrical Engineering, Stanford University (United States)

    2012-06-15

    An amorphous silicon solar cell on a periodic nanocone back reflector with a high 9.7% initial conversion efficiency is presented. The optimized back-reflector morphology provides powerful light trapping and enables excellent electrical cell performance. Up-scaling to industrial production of large-area modules should be possible using nanoimprint lithography. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  4. Numerical quantification and minimization of perimeter losses in high-efficiency silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Altermatt, P.P.; Heiser, Gernot; Green, M.A. [New South Wales Univ., Kensington, NSW (Australia)

    1996-09-01

    This paper presents a quantitative analysis of perimeter losses in high-efficiency silicon solar cells. A new method of numerical modelling is used, which provides the means to simulate a full-sized solar cell, including its perimeter region. We analyse the reduction in efficiency due to perimeter losses as a function of the distance between the active cell area and the cut edge. It is shown how the optimum distance depends on whether the cells in the panel are shingled or not. The simulations also indicate that passivating the cut-face with a thermal oxide does not increase cell efficiency substantially. Therefore, doping schemes for the perimeter domain are suggested in order to increase efficiency levels above present standards. Finally, perimeter effects in cells that remain embedded in the wafer during the efficiency measurement are outlined. (author)

  5. Enhanced performance of solar cells with optimized surface recombination and efficient photon capturing via anisotropic-etching of black silicon

    International Nuclear Information System (INIS)

    Chen, H. Y.; Peng, Y.; Hong, M.; Zhang, Y. B.; Cai, Bin; Zhu, Y. M.; Yuan, G. D.; Zhang, Y.; Liu, Z. Q.; Wang, J. X.; Li, J. M.

    2014-01-01

    We report an enhanced conversion efficiency of femtosecond-laser treated silicon solar cells by surface modification of anisotropic-etching. The etching improves minority carrier lifetime inside modified black silicon area substantially; moreover, after the etching, an inverted pyramids/upright pyramids mixed texture surface is obtained, which shows better photon capturing capability than that of conventional pyramid texture. Combing of these two merits, the reformed solar cells show higher conversion efficiency than that of conventional pyramid textured cells. This work presents a way for fabricating high performance silicon solar cells, which can be easily applied to mass-production

  6. The enhanced efficiency of graphene-silicon solar cells by electric field doping.

    Science.gov (United States)

    Yu, Xuegong; Yang, Lifei; Lv, Qingmin; Xu, Mingsheng; Chen, Hongzheng; Yang, Deren

    2015-04-28

    The graphene-silicon (Gr-Si) Schottky junction solar cell has been recognized as one of the most low-cost candidates in photovoltaics due to its simple fabrication process. However, the low Gr-Si Schottky barrier height largely limits the power conversion efficiency of Gr-Si solar cells. Here, we demonstrate that electric field doping can be used to tune the work function of a Gr film and therefore improve the photovoltaic performance of the Gr-Si solar cell effectively. The electric field doping effects can be achieved either by connecting the Gr-Si solar cell to an external power supply or by polarizing a ferroelectric polymer layer integrated in the Gr-Si solar cell. Exploration of both of the device architecture designs showed that the power conversion efficiency of Gr-Si solar cells is more than twice of the control Gr-Si solar cells. Our study opens a new avenue for improving the performance of Gr-Si solar cells.

  7. Efficiency improvement of multicrystalline silicon solar cells after surface and grain boundaries passivation using vanadium oxide

    Energy Technology Data Exchange (ETDEWEB)

    Derbali, L., E-mail: rayan.slat@yahoo.fr [Photovoltaiec Laboratory, Research and Technology Center of Energy, Technopole de Borj-Cedria, BP 95, Hammam-Lif 2050 (Tunisia); Ezzaouia, H. [Photovoltaiec Laboratory, Research and Technology Center of Energy, Technopole de Borj-Cedria, BP 95, Hammam-Lif 2050 (Tunisia)

    2012-08-01

    Highlights: Black-Right-Pointing-Pointer Evaporation of vanadium pentoxide onto the front surface leads to reduce the surface reflectivity considerably. Black-Right-Pointing-Pointer An efficient surface passivation can be obtained after thermal treatment of obtained films. Black-Right-Pointing-Pointer Efficiency of the obtained solar cells has been improved noticeably after thermal treatment of deposited thin films. - Abstract: The aim of this work is to investigate the effect of vanadium oxide deposition onto the front surface of multicrystalline silicon (mc-Si) substrat, without any additional cost in the fabrication process and leading to an efficient surface and grain boundaries (GBs) passivation that have not been reported before. The lowest reflectance of mc-Si coated with vanadium oxide film of 9% was achieved by annealing the deposited film at 600 Degree-Sign C. Vanadium pentoxide (V{sub 2}O{sub 5}) were thermally evaporated onto the surface of mc-Si substrates, followed by a short annealing duration at a temperature ranging between 600 Degree-Sign C and 800 Degree-Sign C, under O{sub 2} atmosphere. The chemical composition of the films was analyzed by means of Fourier transform infrared spectroscopy (FTIR). Surface and cross-section morphology were determined by atomic force microscope (AFM) and a scanning electron microscope (SEM), respectively. The deposited vanadium oxide thin films make the possibility of combining in one processing step an antireflection coating deposition along with efficient surface state passivation, as compared to a reference wafer. Silicon solar cells based on untreated and treated mc-Si wafers were achieved. We showed that mc-silicon solar cells, subjected to the above treatment, have better short circuit currents and open-circuit voltages than those made from untreated wafers. Thus, the efficiency of obtained solar cells has been improved.

  8. Efficiency improvement of multicrystalline silicon solar cells after surface and grain boundaries passivation using vanadium oxide

    International Nuclear Information System (INIS)

    Derbali, L.; Ezzaouia, H.

    2012-01-01

    Highlights: ► Evaporation of vanadium pentoxide onto the front surface leads to reduce the surface reflectivity considerably. ► An efficient surface passivation can be obtained after thermal treatment of obtained films. ► Efficiency of the obtained solar cells has been improved noticeably after thermal treatment of deposited thin films. - Abstract: The aim of this work is to investigate the effect of vanadium oxide deposition onto the front surface of multicrystalline silicon (mc-Si) substrat, without any additional cost in the fabrication process and leading to an efficient surface and grain boundaries (GBs) passivation that have not been reported before. The lowest reflectance of mc-Si coated with vanadium oxide film of 9% was achieved by annealing the deposited film at 600 °C. Vanadium pentoxide (V 2 O 5 ) were thermally evaporated onto the surface of mc-Si substrates, followed by a short annealing duration at a temperature ranging between 600 °C and 800 °C, under O 2 atmosphere. The chemical composition of the films was analyzed by means of Fourier transform infrared spectroscopy (FTIR). Surface and cross-section morphology were determined by atomic force microscope (AFM) and a scanning electron microscope (SEM), respectively. The deposited vanadium oxide thin films make the possibility of combining in one processing step an antireflection coating deposition along with efficient surface state passivation, as compared to a reference wafer. Silicon solar cells based on untreated and treated mc-Si wafers were achieved. We showed that mc-silicon solar cells, subjected to the above treatment, have better short circuit currents and open-circuit voltages than those made from untreated wafers. Thus, the efficiency of obtained solar cells has been improved.

  9. Improved contact metallization for high efficiency EFG polycrystalline silicon solar cells

    International Nuclear Information System (INIS)

    Dube, C.E.; Gonsiorawski, R.C.

    1990-01-01

    Improvements in the performance of polycrystalline silicon solar cells based on a novel, laser patterned contact process are described. Small lots of cells having an average conversion efficiency of 14 + %, with several cells approaching 15%, are reported for cells of 45 cm 2 area. The high efficiency contact design is based on YAG laser patterning of the silicon nitride anti-reflection coating. The Cu metallization is done using light-induced plating, with the cell providing the driving voltage for the plating process. The Cu electrodeposits into the laser defined windows in the AR coating for reduced contact area, following which the Cu bridges on top of the Ar coating to form a continuous finger pattern. The higher cell conversion efficiency is attributed to reduced shadow loss, higher junction quality, and reduced metal-semiconductor interfacial area

  10. Improving Efficiency of Multicrystalline Silicon and CIGS Solar Cells by Incorporating Metal Nanoparticles

    Directory of Open Access Journals (Sweden)

    Ming-Jer Jeng

    2015-10-01

    Full Text Available This work studies the use of gold (Au and silver (Ag nanoparticles in multicrystalline silicon (mc-Si and copper-indium-gallium-diselenide (CIGS solar cells. Au and Ag nanoparticles are deposited by spin-coating method, which is a simple and low cost process. The random distribution of nanoparticles by spin coating broadens the resonance wavelength of the transmittance. This broadening favors solar cell applications. Metal shadowing competes with light scattering in a manner that varies with nanoparticle concentration. Experimental results reveal that the mc-Si solar cells that incorporate Au nanoparticles outperform those with Ag nanoparticles. The incorporation of suitable concentration of Au and Ag nanoparticles into mc-Si solar cells increases their efficiency enhancement by 5.6% and 4.8%, respectively. Incorporating Au and Ag nanoparticles into CIGS solar cells improve their efficiency enhancement by 1.2% and 1.4%, respectively. The enhancement of the photocurrent in mc-Si solar cells is lower than that in CIGS solar cells, owing to their different light scattering behaviors and material absorption coefficients.

  11. Fabrication of 20.19% Efficient Single-Crystalline Silicon Solar Cell with Inverted Pyramid Microstructure.

    Science.gov (United States)

    Zhang, Chunyang; Chen, Lingzhi; Zhu, Yingjie; Guan, Zisheng

    2018-04-03

    This paper reports inverted pyramid microstructure-based single-crystalline silicon (sc-Si) solar cell with a conversion efficiency up to 20.19% in standard size of 156.75 × 156.75 mm 2 . The inverted pyramid microstructures were fabricated jointly by metal-assisted chemical etching process (MACE) with ultra-low concentration of silver ions and optimized alkaline anisotropic texturing process. And the inverted pyramid sizes were controlled by changing the parameters in both MACE and alkaline anisotropic texturing. Regarding passivation efficiency, the textured sc-Si with normal reflectivity of 9.2% and inverted pyramid size of 1 μm was used to fabricate solar cells. The best batch of solar cells showed a 0.19% higher of conversion efficiency and a 0.22 mA cm -2 improvement in short-circuit current density, and the excellent photoelectric property surpasses that of the same structure solar cell reported before. This technology shows great potential to be an alternative for large-scale production of high efficient sc-Si solar cells in the future.

  12. Increasing the efficiency of silicon heterojunction solar cells and modules by light soaking

    KAUST Repository

    Kobayashi, Eiji

    2017-06-24

    Silicon heterojunction solar cells use crystalline silicon (c-Si) wafers as optical absorbers and employ bilayers of doped/intrinsic hydrogenated amorphous silicon (a-Si:H) to form passivating contacts. Recently, we demonstrated that such solar cells increase their operating voltages and thus their conversion efficiencies during light exposure. We found that this performance increase is due to improved passivation of the a-Si:H/c-Si interface and is induced by injected charge carriers (either by light soaking or forward-voltage biasing of the device). Here, we discuss this counterintuitive behavior and establish that: (i) the performance increase is observed in solar cells as well as modules; (ii) this phenomenon requires the presence of doped a-Si:H films, but is independent from whether light is incident from the a-Si:H(p) or the a-Si:H(n) side; (iii) UV and blue photons do not play a role in this effect; (iv) the performance increase can be observed under illumination intensities as low as 20Wm (0.02-sun) and appears to be almost identical in strength when under 1-sun (1000Wm); (v) the underlying physical mechanism likely differs from annealing-induced surface passivation.

  13. High-Efficiency Silicon/Organic Heterojunction Solar Cells with Improved Junction Quality and Interface Passivation.

    Science.gov (United States)

    He, Jian; Gao, Pingqi; Ling, Zhaoheng; Ding, Li; Yang, Zhenhai; Ye, Jichun; Cui, Yi

    2016-12-27

    Silicon/organic heterojunction solar cells (HSCs) based on conjugated polymers, poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS), and n-type silicon (n-Si) have attracted wide attention due to their potential advantages of high efficiency and low cost. However, the state-of-the-art efficiencies are still far from satisfactory due to the inferior junction quality. Here, facile treatments were applied by pretreating the n-Si wafer in tetramethylammonium hydroxide (TMAH) solution and using a capping copper iodide (CuI) layer on the PEDOT:PSS layer to achieve a high-quality Schottky junction. Detailed photoelectric characteristics indicated that the surface recombination was greatly suppressed after TMAH pretreatment, which increased the thickness of the interfacial oxide layer. Furthermore, the CuI capping layer induced a strong inversion layer near the n-Si surface, resulting in an excellent field effect passivation. With the collaborative improvements in the interface chemical and electrical passivation, a competitive open-circuit voltage of 0.656 V and a high fill factor of 78.1% were achieved, leading to a stable efficiency of over 14.3% for the planar n-Si/PEDOT:PSS HSCs. Our findings suggest promising strategies to further exploit the full voltage as well as efficiency potentials for Si/organic solar cells.

  14. Silicon solar cells with high efficiencies. Final report; Silicium-Solarzellen mit hoechsten Wirkungsgraden. Abschlussbericht

    Energy Technology Data Exchange (ETDEWEB)

    Wettling, W.; Knobloch, J.; Glunz, S.W.; Henninger, V.; Kamerewerd, F.J.; Koester, B.; Leimenstoll, A.; Schaeffer, E.; Schumacher, J.; Sterk, S.; Warta, W.

    1996-06-01

    In this report the basic activities for the development of the silicon high efficiency solar cell technology are described. The project had two main goals: (i) The improvement of efficiencies using a systematic optimization of all cell parameters and technology steps and (ii) the simplification of the technology towards the possibilities of an industrial production, keeping the cell efficiency at a high level. Starting from the LBSF technology, developed at Fraunhofer ISE, the reduction of all loss mechanisms led to efficiencies up to 22.5% on FZ-silicon. Using a modification of this technology efficiencies of up to 21.7% have been reached on Cz-silicon. Even after the reduction of the number of photolithographic steps from six to three efficiencies up to 21.6% on FZ- and 19.5% on Cz-silicon have been obtained. These are best values in an international comparison. (orig.) [Deutsch] In diesem Projektbericht werden grundlegende Arbeiten zur Entwicklung der Silicium-`Highefficiency`-Solarzellentechnologie beschrieben. Das Projekt hatte zwei Hauptziele: (i) Die Erhoehung der Wirkungsgrade durch eine systematische Optimierung aller Zellparameter und aller Technologieschritte und (ii) die Vereinfachung der Technologie unter Beibehaltung sehr hoher Wirkungsgrade mit dem Ziel einer Annaeherung an die Moeglichkeiten der Industriefertigung. Ausgehend von der im Fraunhofer ISE entwickelten LBSF-Technologie gelang es durch Reduzierung aller Verlustmechanismen, Wirkungsgrade bis zu 22.5% auf FZ-Silicium zu erreichen. Nach Anpassung der Technologie wurden auf Cz-Silicium Wirkungsgrade bis 21.7% erzielt. Ein von sechs auf drei Fotomaskenschritte reduzierter Prozess erzielte immerhin noch Werte bis 21.6% auf FZ- und 19.5% auf Cz-Material. Alle dieser Werte stellen im internationalen Vergleich Spitzenleistungen dar. (orig.)

  15. Controllable Nanoscale Inverted Pyramids for High-Efficient Quasi-Omnidirectional Crystalline Silicon Solar Cells.

    Science.gov (United States)

    Xu, Haiyuan; Zhong, Sihua; Zhuang, Yufeng; Shen, Wenzhong

    2017-11-14

    Nanoscale inverted pyramid structures (NIPs) have always been regarded as one of the most paramount light management schemes to achieve the extraordinary performance in various devices, especially in solar cells, due to their outstanding antireflection ability with relative lower surface enhancement ratio. However, the current approaches to fabricating the NIPs are complicated and not cost-effective for the massive cell production in the photovoltaic industry. Here, controllable NIPs are fabricated on crystalline silicon (c-Si) wafers by Ag catalyzed chemical etching and alkaline modification, which is a preferable all-solution-processed method. Through applying the NIPs to c-Si solar cells and optimizing the cell design, we have successfully achieved highly efficient NIPs textured solar cells with the champion efficiency of 20.5%. Importantly, the NIPs textured solar cells are further demonstrated to possess the quasi-omnidirectional property over the broad sunlight incident angles of approximately 0°-60°. Moreover, the NIPs are theoretically revealed to offer light trapping advantage for ultrathin c-Si solar cells. Hence, the NIPs formed by the controllable method exhibit a great potential to be used in the future photovoltaic industry as surface texture. © 2017 IOP Publishing Ltd.

  16. Enhancing crystalline silicon solar cell efficiency with SixGe1-x layers

    Science.gov (United States)

    Ali, Adnan; Cheow, S. L.; Azhari, A. W.; Sopian, K.; Zaidi, Saleem H.

    Crystalline silicon (c-Si) solar cell represents a cost effective, environment-friendly, and proven renewable energy resource. Industrially manufacturing of c-Si solar has now matured in terms of efficiency and cost. Continuing cost-effective efficiency enhancement requires transition towards thinner wafers in near term and thin-films in the long term. Successful implementation of either of these alternatives must address intrinsic optical absorption limitation of Si. Bandgap engineering through integration with SixGe1-x layers offers an attractive, inexpensive option. With the help of PC1D software, role of SixGe1-x layers in conventional c-Si solar cells has been intensively investigated in both wafer and thin film configurations by varying Ge concentration, thickness, and placement. In wafer configuration, increase in Ge concentration leads to enhanced absorption through bandgap broadening with an efficiency enhancement of 8% for Ge concentrations of less than 20%. At higher Ge concentrations, despite enhanced optical absorption, efficiency is reduced due to substantial lowering of open-circuit voltage. In 5-25-μm thickness, thin-film solar cell configurations, efficiency gain in excess of 30% is achievable. Therefore, SixGe1-x based thin-film solar cells with an order of magnitude reduction in costly Si material are ideally-suited both in terms of high efficiency and cost. Recent research has demonstrated significant improvement in epitaxially grown SixGe1-x layers on nanostructured Si substrates, thereby enhancing potential of this approach for next generation of c-Si based photovoltaics.

  17. The construction of a process line for high efficiency silicon solar cells under clean-room conditions

    International Nuclear Information System (INIS)

    Aberle, A.; Faller, C.; Grille, T.; Glunz, S.; Kamerewerd, F.J.; Kopp, J.; Knobloch, J.; Klussmann, S.; Lauby, E.; Noel, A.; Paul, O.; Schaeffer, E.; Schubert, U.; Seitz, S.; Sterk, S.; Voss, B.; Warta, W.; Wettling, W.

    1992-08-01

    The aim of this research project was to plan, construct and test a clean-room technology laboratory for the manufacturing of silicon solar cells with 20% efficiency (1.5AM). In addition to the establishment of the laboratory, there existed the case of establishing the material and technological fundamentals of high-efficiency solar cells, testing and optimizing all stages of production as well as constructing test stands for accompanying characterisation work. The following final report describes the construction of the laboratory and characterisation systems, the material elements of high-efficiency solar cells as well as the most important results of solar cell production and optimisation. (orig./BWI) [de

  18. Doping efficiency analysis of highly phosphorous doped epitaxial/amorphous silicon emitters grown by PECVD for high efficiency silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    El-Gohary, H.G.; Sivoththaman, S. [Waterloo Univ., ON (Canada). Dept. of Electrical and Computer Engineering

    2008-08-15

    The efficient doping of hydrogenated amorphous and crystalline silicon thin films is a key factor in the fabrication of silicon solar cells. The most popular method for developing those films is plasma enhanced chemical vapor deposition (PECVD) because it minimizes defect density and improves doping efficiency. This paper discussed the preparation of different structure phosphorous doped silicon emitters ranging from epitaxial to amorphous films at low temperature. Phosphine (PH{sub 3}) was employed as the doping gas source with the same gas concentration for both epitaxial and amorphous silicon emitters. The paper presented an analysis of dopant activation by applying a very short rapid thermal annealing process (RTP). A spreading resistance profile (SRP) and SIMS analysis were used to detect both the active dopant and the dopant concentrations, respectively. The paper also provided the results of a structural analysis for both bulk and cross-section at the interface using high-resolution transmission electron microscopy and Raman spectroscopy, for epitaxial and amorphous films. It was concluded that a unity doping efficiency could be achieved in epitaxial layers by applying an optimized temperature profile using short time processing rapid thermal processing technique. The high quality, one step epitaxial layers, led to both high conductive and high doping efficiency layers.

  19. Industrial Silicon Wafer Solar Cells

    OpenAIRE

    Neuhaus, Dirk-Holger; Münzer, Adolf

    2007-01-01

    In 2006, around 86% of all wafer-based silicon solar cells were produced using screen printing to form the silver front and aluminium rear contacts and chemical vapour deposition to grow silicon nitride as the antireflection coating onto the front surface. This paper reviews this dominant solar cell technology looking into state-of-the-art equipment and corresponding processes for each process step. The main efficiency losses of this type of solar cell are analyzed to demonstrate the future e...

  20. Designing High-Efficiency Thin Silicon Solar Cells Using Parabolic-Pore Photonic Crystals

    Science.gov (United States)

    Bhattacharya, Sayak; John, Sajeev

    2018-04-01

    We demonstrate the efficacy of wave-interference-based light trapping and carrier transport in parabolic-pore photonic-crystal, thin-crystalline silicon (c -Si) solar cells to achieve above 29% power conversion efficiencies. Using a rigorous solution of Maxwell's equations through a standard finite-difference time domain scheme, we optimize the design of the vertical-parabolic-pore photonic crystal (PhC) on a 10 -μ m -thick c -Si solar cell to obtain a maximum achievable photocurrent density (MAPD) of 40.6 mA /cm2 beyond the ray-optical, Lambertian light-trapping limit. For a slanted-parabolic-pore PhC that breaks x -y symmetry, improved light trapping occurs due to better coupling into parallel-to-interface refraction modes. We achieve the optimum MAPD of 41.6 mA /cm2 for a tilt angle of 10° with respect to the vertical axis of the pores. This MAPD is further improved to 41.72 mA /cm2 by introducing a 75-nm SiO2 antireflective coating on top of the solar cell. We use this MAPD and the associated charge-carrier generation profile as input for a numerical solution of Poisson's equation coupled with semiconductor drift-diffusion equations using a Shockley-Read-Hall and Auger recombination model. Using experimentally achieved surface recombination velocities of 10 cm /s , we identify semiconductor doping profiles that yield power conversion efficiencies over 29%. Practical considerations of additional upper-contact losses suggest efficiencies close to 28%. This improvement beyond the current world record is largely due to an open-circuit voltage approaching 0.8 V enabled by reduced bulk recombination in our thin silicon architecture while maintaining a high short-circuit current through wave-interference-based light trapping.

  1. Highly efficient luminescent solar concentrators based on earth-abundant indirect-bandgap silicon quantum dots

    Science.gov (United States)

    Meinardi, Francesco; Ehrenberg, Samantha; Dhamo, Lorena; Carulli, Francesco; Mauri, Michele; Bruni, Francesco; Simonutti, Roberto; Kortshagen, Uwe; Brovelli, Sergio

    2017-02-01

    Building-integrated photovoltaics is gaining consensus as a renewable energy technology for producing electricity at the point of use. Luminescent solar concentrators (LSCs) could extend architectural integration to the urban environment by realizing electrode-less photovoltaic windows. Crucial for large-area LSCs is the suppression of reabsorption losses, which requires emitters with negligible overlap between their absorption and emission spectra. Here, we demonstrate the use of indirect-bandgap semiconductor nanostructures such as highly emissive silicon quantum dots. Silicon is non-toxic, low-cost and ultra-earth-abundant, which avoids the limitations to the industrial scaling of quantum dots composed of low-abundance elements. Suppressed reabsorption and scattering losses lead to nearly ideal LSCs with an optical efficiency of η = 2.85%, matching state-of-the-art semi-transparent LSCs. Monte Carlo simulations indicate that optimized silicon quantum dot LSCs have a clear path to η > 5% for 1 m2 devices. We are finally able to realize flexible LSCs with performances comparable to those of flat concentrators, which opens the way to a new design freedom for building-integrated photovoltaics elements.

  2. 22.5% efficient silicon heterojunction solar cell with molybdenum oxide hole collector

    OpenAIRE

    Geissbühler Jonas; Werner Jérémie; Martin de Nicolas Silvia; Barraud Loris; Hessler-Wyser Aïcha; Despeisse Matthieu; Nicolay Sylvain; Tomasi Andrea; Niesen Bjoern; De Wolf Stefaan; Ballif Christophe

    2015-01-01

    Substituting the doped amorphous silicon films at the front of silicon heterojunction solar cells with wide bandgap transition metal oxides can mitigate parasitic light absorption losses. This was recently proven by replacing p type amorphous silicon with molybdenum oxide films. In this article we evidence that annealing above 130?°C—often needed for the curing of printed metal contacts—detrimentally impacts hole collection of such devices. We circumvent this issue by using electrodeposited c...

  3. A Low Resistance Calcium/Reduced Titania Passivated Contact for High Efficiency Crystalline Silicon Solar Cells

    KAUST Repository

    Allen, Thomas G.

    2017-02-04

    Recent advances in the efficiency of crystalline silicon (c-Si) solar cells have come through the implementation of passivated contacts that simultaneously reduce recombination and resistive losses within the contact structure. In this contribution, low resistivity passivated contacts are demonstrated based on reduced titania (TiOx) contacted with the low work function metal, calcium (Ca). By using Ca as the overlying metal in the contact structure we are able to achieve a reduction in the contact resistivity of TiOx passivated contacts of up to two orders of magnitude compared to previously reported data on Al/TiOx contacts, allowing for the application of the Ca/TiOx contact to n-type c-Si solar cells with partial rear contacts. Implementing this contact structure on the cell level results in a power conversion efficiency of 21.8% where the Ca/TiOx contact comprises only ≈6% of the rear surface of the solar cell, an increase of 1.5% absolute compared to a similar device fabricated without the TiOx interlayer.

  4. A Low Resistance Calcium/Reduced Titania Passivated Contact for High Efficiency Crystalline Silicon Solar Cells

    KAUST Repository

    Allen, Thomas G.; Bullock, James; Jeangros, Quentin; Samundsett, Christian; Wan, Yimao; Cui, Jie; Hessler-Wyser, Aï cha; De Wolf, Stefaan; Javey, Ali; Cuevas, Andres

    2017-01-01

    Recent advances in the efficiency of crystalline silicon (c-Si) solar cells have come through the implementation of passivated contacts that simultaneously reduce recombination and resistive losses within the contact structure. In this contribution, low resistivity passivated contacts are demonstrated based on reduced titania (TiOx) contacted with the low work function metal, calcium (Ca). By using Ca as the overlying metal in the contact structure we are able to achieve a reduction in the contact resistivity of TiOx passivated contacts of up to two orders of magnitude compared to previously reported data on Al/TiOx contacts, allowing for the application of the Ca/TiOx contact to n-type c-Si solar cells with partial rear contacts. Implementing this contact structure on the cell level results in a power conversion efficiency of 21.8% where the Ca/TiOx contact comprises only ≈6% of the rear surface of the solar cell, an increase of 1.5% absolute compared to a similar device fabricated without the TiOx interlayer.

  5. Towards a utilisation of transient processing in the technology of high efficiency silicon solar cells

    International Nuclear Information System (INIS)

    Eichhammer, W.

    1989-01-01

    The utilization of transient processing in the technology of high efficient silicon solar cells is investigated. An ultraviolet laser (an ArF pulsed excimer laser working at 193 nm) is applied. Laser processing induces only a short superficial melting of the material and does not modify the transport properties in the base of the material. This mode of processing associated to ion implantation to form the junction as well as an oxide layer in an atmosphere of oxygen. The volume was left entirely cold in this process. The results of the investigation show: that an entirely cold process of solar cell fabrication needs a thermal treatment at a temperature around 600 C; that the oxides obtained are not satisfying as passivating layers; and that the Rapid Thermal Processing (RTP) induced recombination centers are not directly related to the quenching step but a consequence of the presence of metal impurities. The utilisation of transient processing in the adiabatic regime (laser) and in the rapid isothermal regime (RTP) are possible as two complementary techniques for the realization of high efficiency solar cells

  6. Efficient nanorod-based amorphous silicon solar cells with advanced light trapping

    International Nuclear Information System (INIS)

    Kuang, Y.; Lare, M. C. van; Polman, A.; Veldhuizen, L. W.; Schropp, R. E. I.; Rath, J. K.

    2015-01-01

    We present a simple, low-cost, and scalable approach for the fabrication of efficient nanorod-based solar cells. Templates with arrays of self-assembled ZnO nanorods with tunable morphology are synthesized by chemical bath deposition using a low process temperature at 80 °C. The nanorod templates are conformally coated with hydrogenated amorphous silicon light absorber layers of 100 nm and 200 nm thickness. An initial efficiency of up to 9.0% is achieved for the optimized design. External quantum efficiency measurements on the nanorod cells show a substantial photocurrent enhancement both in the red and the blue parts of the solar spectrum. Key insights in the light trapping mechanisms in these arrays are obtained via a combination of three-dimensional finite-difference time-domain simulations, optical absorption, and external quantum efficiency measurements. Front surface patterns enhance the light incoupling in the blue, while rear side patterns lead to enhanced light trapping in the red. The red response in the nanorod cells is limited by absorption in the patterned Ag back contact. With these findings, we develop and experimentally realize a further advanced design with patterned front and back sides while keeping the Ag reflector flat, showing significantly enhanced scattering from the back reflector with reduced parasitic absorption in the Ag and thus higher photocurrent generation. Many of the findings in this work can serve to provide insights for further optimization of nanostructures for thin-film solar cells in a broad range of materials

  7. Efficient nanorod-based amorphous silicon solar cells with advanced light trapping

    Energy Technology Data Exchange (ETDEWEB)

    Kuang, Y. [Physics of Devices, Debye Institute for Nanomaterials Science, Utrecht University, High Tech Campus, Building 21, 5656 AE Eindhoven (Netherlands); Department of Applied Physics, Plasma & Materials Processing, Eindhoven University of Technology (TUE), P.O. Box 513, 5600 MB Eindhoven (Netherlands); Lare, M. C. van; Polman, A. [Center for Nanophotonics, FOM Institute AMOLF, Science Park 104, 1098 XG Amsterdam (Netherlands); Veldhuizen, L. W.; Schropp, R. E. I., E-mail: r.e.i.schropp@tue.nl [Department of Applied Physics, Plasma & Materials Processing, Eindhoven University of Technology (TUE), P.O. Box 513, 5600 MB Eindhoven (Netherlands); Rath, J. K. [Physics of Devices, Debye Institute for Nanomaterials Science, Utrecht University, High Tech Campus, Building 21, 5656 AE Eindhoven (Netherlands)

    2015-11-14

    We present a simple, low-cost, and scalable approach for the fabrication of efficient nanorod-based solar cells. Templates with arrays of self-assembled ZnO nanorods with tunable morphology are synthesized by chemical bath deposition using a low process temperature at 80 °C. The nanorod templates are conformally coated with hydrogenated amorphous silicon light absorber layers of 100 nm and 200 nm thickness. An initial efficiency of up to 9.0% is achieved for the optimized design. External quantum efficiency measurements on the nanorod cells show a substantial photocurrent enhancement both in the red and the blue parts of the solar spectrum. Key insights in the light trapping mechanisms in these arrays are obtained via a combination of three-dimensional finite-difference time-domain simulations, optical absorption, and external quantum efficiency measurements. Front surface patterns enhance the light incoupling in the blue, while rear side patterns lead to enhanced light trapping in the red. The red response in the nanorod cells is limited by absorption in the patterned Ag back contact. With these findings, we develop and experimentally realize a further advanced design with patterned front and back sides while keeping the Ag reflector flat, showing significantly enhanced scattering from the back reflector with reduced parasitic absorption in the Ag and thus higher photocurrent generation. Many of the findings in this work can serve to provide insights for further optimization of nanostructures for thin-film solar cells in a broad range of materials.

  8. Flexible silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Blakers, A.W.; Armour, T. [Centre for Sustainable Energy Systems, The Australian National University, Canberra ACT 0200 (Australia)

    2009-08-15

    In order to be useful for certain niche applications, crystalline silicon solar cells must be able to sustain either one-time flexure or multiple non-critical flexures without significant loss of strength or efficiency. This paper describes experimental characterisation of the behaviour of thin crystalline silicon solar cells, under either static or repeated flexure, by flexing samples and recording any resulting changes in performance. Thin SLIVER cells were used for the experiment. Mechanical strength was found to be unaffected after 100,000 flexures. Solar conversion efficiency remained at greater than 95% of the initial value after 100,000 flexures. Prolonged one-time flexure close to, but not below, the fracture radius resulted in no significant change of properties. For every sample, fracture occurred either on the first flexure to a given radius of curvature, or not at all when using that radius. In summary, for a given radius of curvature, either the flexed solar cells broke immediately, or they were essentially unaffected by prolonged or multiple flexing. (author)

  9. High efficiency high rate microcrystalline silicon thin-film solar cells deposited at plasma excitation frequencies larger than 100 MHz

    Czech Academy of Sciences Publication Activity Database

    Strobel, C.; Leszczynska, B.; Merkel, U.; Kuske, J.; Fischer, D.D.; Albert, M.; Holovský, Jakub; Michard, S.

    2015-01-01

    Roč. 143, Dec (2015), 347-353 ISSN 0927-0248 R&D Projects: GA MŠk 7E12029 EU Projects: European Commission(XE) 283501 - Fast Track Institutional support: RVO:68378271 Keywords : VHF * PECVD * microcrystalline silicon * solar cell * high rate * high efficiency Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 4.732, year: 2015

  10. A high volume cost efficient production macrostructuring process. [for silicon solar cell surface treatment

    Science.gov (United States)

    Chitre, S. R.

    1978-01-01

    The paper presents an experimentally developed surface macro-structuring process suitable for high volume production of silicon solar cells. The process lends itself easily to automation for high throughput to meet low-cost solar array goals. The tetrahedron structure observed is 0.5 - 12 micron high. The surface has minimal pitting with virtually no or very few undeveloped areas across the surface. This process has been developed for (100) oriented as cut silicon. Chemi-etched, hydrophobic and lapped surfaces were successfully texturized. A cost analysis as per Samics is presented.

  11. High-efficiency silicon solar cells for low-illumination applications

    OpenAIRE

    Glunz, S.W.; Dicker, J.; Esterle, M.; Hermle, M.; Isenberg, J.; Kamerewerd, F.; Knobloch, J.; Kray, D.; Leimenstoll, A.; Lutz, F.; Oßwald, D.; Preu, R.; Rein, S.; Schäffer, E.; Schetter, C.

    2002-01-01

    At Fraunhofer ISE the fabrication of high-efficiency solar cells was extended from a laboratory scale to a small pilot-line production. Primarily, the fabricated cells are used in small high-efficiency modules integrated in prototypes of solar-powered portable electronic devices such as cellular phones, handheld computers etc. Compared to other applications of high-efficiency cells such as solar cars and planes, the illumination densities found in these mainly indoor applications are signific...

  12. Amorphous silicon solar cells on nano-imprinted commodity paper without sacrificing efficiency

    NARCIS (Netherlands)

    Werf, van der C.H.M.; Budel, T.; Dorenkamper, M.S.; Zhang, D.; Soppe, W.; de Neve, H.; Schropp, R.E.I.

    2015-01-01

    Paper is a cheap substrate which is in principle compatible with the process temperature applied in the plasma enhanced chemical vapour deposition (PECVD) and hot wire CVD (HWCVD) of thin film silicon solar cells. The main drawback of paper for this application is the porosity due to its fibre like

  13. The JPL space photovoltaic program. [energy efficient so1 silicon solar cells for space applications

    Science.gov (United States)

    Scott-Monck, J. A.

    1979-01-01

    The development of energy efficient solar cells for space applications is discussed. The electrical performance of solar cells as a function of temperature and solar intensity and the influence of radiation and subsequent thermal annealing on the electrical behavior of cells are among the factors studied. Progress in GaAs solar cell development is reported with emphasis on improvement of output power and radiation resistance to demonstrate a solar cell array to meet the specific power and stability requirements of solar power satellites.

  14. Challenges in amorphous silicon solar cell technology

    NARCIS (Netherlands)

    Swaaij, van R.A.C.M.M.; Zeman, M.; Korevaar, B.A.; Smit, C.; Metselaar, J.W.; Sanden, van de M.C.M.

    2000-01-01

    Hydrogenated amorphous silicon is nowadays extensively used for a range of devices, amongst others solar cells, Solar cell technology has matured over the last two decades and resulted in conversion efficiencies in excess of 15%. In this paper the operation of amorphous silicon solar cells is

  15. Ultraviolet Plasmonic Aluminium Nanoparticles for Highly Efficient Light Incoupling on Silicon Solar Cells

    Directory of Open Access Journals (Sweden)

    Yinan Zhang

    2016-05-01

    Full Text Available Plasmonic metal nanoparticles supporting localized surface plasmon resonances have attracted a great deal of interest in boosting the light absorption in solar cells. Among the various plasmonic materials, the aluminium nanoparticles recently have become a rising star due to their unique ultraviolet plasmonic resonances, low cost, earth-abundance and high compatibility with the complementary metal-oxide semiconductor (CMOS manufacturing process. Here, we report some key factors that determine the light incoupling of aluminium nanoparticles located on the front side of silicon solar cells. We first numerically study the scattering and absorption properties of the aluminium nanoparticles and the influence of the nanoparticle shape, size, surface coverage and the spacing layer on the light incoupling using the finite difference time domain method. Then, we experimentally integrate 100-nm aluminium nanoparticles on the front side of silicon solar cells with varying silicon nitride thicknesses. This study provides the fundamental insights for designing aluminium nanoparticle-based light trapping on solar cells.

  16. Silver-free Metallization Technology for Producing High Efficiency, Industrial Silicon Solar Cells

    Energy Technology Data Exchange (ETDEWEB)

    Michaelson, Lynne M [Technic Inc; Munoz, Krystal [Technic Inc.; Karas, Joseph [Arizona State Univ., Tempe, AZ (United States); Bowden, Stuart [Arizona State Univ., Tempe, AZ (United States); Rand, James A; Gallegos, Anthony [Technic Inc.; Tyson, Tom [Technic Inc.; Buonassisi, Tonio [Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States)

    2018-03-30

    The goal of this project is to provide a commercially viable Ag-free metallization technology that will both reduce cost and increase efficiency of standard silicon solar cells. By removing silver from the front grid metallization and replacing it with lower cost nickel, copper, and tin metal, the front grid direct materials costs will decrease. This reduction in material costs should provide a path to meeting the Sunshot 2020 goal of $1 / WDC. As of today, plated contacts are not widely implemented in large scale manufacturing. For organizations that wish to implement pilot scale manufacturing, only two equipment choices exist. These equipment manufacturers do not supply plating chemistry. The main goal of this project is to provide a chemistry and equipment solution to the industry that enables reliable manufacturing of plated contacts marked by passing reliability results and higher efficiencies than silver paste front grid contacts. To date, there have been several key findings that point to plated contacts performing equal to or better than the current state of the art silver paste contacts. Poor adhesion and reliability concerns are a few of the hurdles for plated contacts, specifically plated nickel directly on silicon. A key finding of the Phase 1 budget period is that the plated contacts have the same adhesion as the silver paste controls. This is a huge win for plated contacts. With very little optimization work, state of the art electrical results for plated contacts on laser ablated lines have been demonstrated with efficiencies up to 19.1% and fill factors ~80% on grid lines 40-50 um wide. The silver paste controls with similar line widths demonstrate similar electrical results. By optimizing the emitter and grid design for the plated contacts, it is expected that the electrical performance will exceed the silver paste controls. In addition, cells plated using Technic chemistry and equipment pass reliability testing; i.e. 1000 hours damp heat and 200

  17. Photovoltaic characteristics of porous silicon /(n+ - p) silicon solar cells

    International Nuclear Information System (INIS)

    Dzhafarov, T.D.; Aslanov, S.S.; Ragimov, S.H.; Sadigov, M.S.; Nabiyeva, A.F.; Yuksel, Aydin S.

    2012-01-01

    Full text : The purpose of this work is to improve the photovoltaic parameters of the screen-printed silicon solar cells by formation the nano-porous silicon film on the frontal surface of the cell. The photovoltaic characteristics of two type silicon solar cells with and without porous silicon layer were measured and compared. A remarkable increment of short-circuit current density and the efficiency by 48 percent and 20 percent, respectively, have been achieved for PS/(n + - pSi) solar cell comparing to (n + - p)Si solar cell without PS layer

  18. Efficiency enhancement of silicon nanowire solar cells by using UV/Ozone treatments and micro-grid electrodes

    Science.gov (United States)

    Chen, Junyi; Subramani, Thiyagu; Sun, Yonglie; Jevasuwan, Wipakorn; Fukata, Naoki

    2018-05-01

    Silicon nanowire solar cells were fabricated by metal catalyzed electroless etching (MCEE) followed by thermal chemical vapor deposition (CVD). In this study, we investigated two effects, a UV/ozone treatment and the use of a micro-grid electrodes, to enhance light absorption and reduce the optic losses in the solar cell device. The UV/ozone treatment successfully improved the conversion efficiency. The micro-grid electrodes were then applied in solar cell devices subjected to a back surface field (BSF) treatment and rapid thermal annealing (RTA). These effects improved the conversion efficiency from 9.4% to 10.9%. Moreover, to reduce surface recombination and improve the continuity of front electrodes, we optimized the etching time of the MCEE process, giving a high efficiency of 12.3%.

  19. THE EFFECT OF MAGNETIC FIELD ON THE EFFICIENCY OF A SILICON SOLAR CELL UNDER AN INTENSE LIGHT CONCENTRATION

    Directory of Open Access Journals (Sweden)

    Zoungrana Martial

    2017-06-01

    Full Text Available This work put in evidence, magnetic field effect the electrical parameters of a silicon solar cell illuminated by an intense light concentration: external load electric power, conversion efficiency, fill factor, external optimal charge load. Due to the high photogeneration of carrier in intense light illumination mode, in addition of magnetic field, we took into account the carrier gradient electric field in the base of the solar cell. Taking into account this electric field and the applied magnetic field in our model led to new analytical expressions of the continuity equation, the photocurrent and the photovoltage.

  20. An 8.68% efficiency chemically-doped-free graphene-silicon solar cell using silver nanowires network buried contacts.

    Science.gov (United States)

    Yang, Lifei; Yu, Xuegong; Hu, Weidan; Wu, Xiaolei; Zhao, Yan; Yang, Deren

    2015-02-25

    Graphene-silicon (Gr-Si) heterojunction solar cells have been recognized as one of the most low-cost candidates in photovoltaics due to its simple fabrication process. However, the high sheet resistance of chemical vapor deposited (CVD) Gr films is still the most important limiting factor for the improvement of the power conversion efficiency of Gr-Si solar cells, especially in the case of large device-active area. In this work, we have fabricated a novel transparent conductive film by hybriding a monolayer Gr film with silver nanowires (AgNWs) network soldered by the graphene oxide (GO) flakes. This Gr-AgNWs hybrid film exhibits low sheet resistance and larger direct-current to optical conductivity ratio, quite suitable for solar cell fabrication. An efficiency of 8.68% has been achieved for the Gr-AgNWs-Si solar cell, in which the AgNWs network acts as buried contacts. Meanwhile, the Gr-AgNWs-Si solar cells have much better stability than the chemically doped Gr-Si solar cells. These results show a new route for the fabrication of high efficient and stable Gr-Si solar cells.

  1. Monocrystalline silicon photovoltaic luminescent solar concentrator with 4.2% power conversion efficiency

    NARCIS (Netherlands)

    Desmet, L.; Ras, A.J.M.; Boer, de D.K.G.; Debije, M.G.

    2012-01-01

    We report conversion efficiencies of experimental single and dual light guide luminescent solar concentrators. We have built several 5¿¿cm×5¿¿cm and 10¿¿cm×10¿¿cm luminescent solar concentrator (LSC) demonstrators consisting of c-Si photovoltaic cells attached to luminescent light guides of Lumogen

  2. Record high efficiency of screen-printed silicon aluminum back surface field solar cell: 20.29%

    Science.gov (United States)

    Kim, Ki Hyung; Park, Chang Sub; Doo Lee, Jae; Youb Lim, Jong; Yeon, Je Min; Kim, Il Hwan; Lee, Eun Joo; Cho, Young Hyun

    2017-08-01

    We have achieved a record high cell efficiency of 20.29% for an industrial 6-in. p-type monocrystalline silicon solar cell with a full-area aluminum back surface field (Al-BSF) by simply modifying the cell structure and optimizing the process with the existing cell production line. The cell efficiency was independently confirmed by the Solar Energy Research Institute of Singapore (SERIS). To increase the cell efficiency, for example, in four busbars, double printing, a lightly doped emitter with a sheet resistance of 90 to 100 Ω/□, and front surface passivation by using silicon oxynitride (SiON) on top of a silicon nitride (SiN x ) antireflection layer were adopted. To optimize front side processing, PC1D simulation was carried out prior to cell fabrication. The resulting efficiency gain is 0.64% compared with that in the reference cells with three busbars, a single antireflection coating layer, and a low-sheet-resistance emitter.

  3. Efficient Near-Infrared-Transparent Perovskite Solar Cells Enabling Direct Comparison of 4-Terminal and Monolithic Perovskite/Silicon Tandem Cells

    OpenAIRE

    Werner, Jérémie; Barraud, Loris; Walter, Arnaud; Bräuninger, Matthias; Sahli, Florent; Sacchetto, Davide; Tétreault, Nicolas; Paviet-Salomon, Bertrand; Moon, Soo-Jin; Allebé, Christophe; Despeisse, Matthieu; Nicolay, Sylvain; De Wolf, Stefaan; Niesen, Bjoern; Ballif, Christophe

    2016-01-01

    Combining market-proven silicon solar cell technology with an efficient wide band gap top cell into a tandem device is an attractive approach to reduce the cost of photovoltaic systems. For this, perovskite solar cells are promising high-efficiency top cell candidates, but their typical device size (

  4. Simple down conversion nano-crystal coatings for enhancing Silicon-solar cells efficiency

    Directory of Open Access Journals (Sweden)

    Gur Mittelman

    2016-09-01

    Full Text Available Utilizing self-assembled nano-structured coatings on top of existing solar cells has thepotential to increase the total quantum efficiency of the cell using a simple and cheap process. In ourwork we have exploited the controlled absorption of nano-crystal with different band gaps to realizedown conversion artificial antennas that self-assembled on the device surface. The UV sun light isconverted to the visible light enhancing the solar cell performance in two complementary routes; a.protecting the solar cell and coatings from the UV illumination and therefore reducing the UVradiation damage. b. enhancing the total external quantum efficiency of the cell by one percent. Thisis achieved using a simple cheap process that can be adjusted to many different solar cells.

  5. Simulation of a high-efficiency silicon-based heterojunction solar cell

    Science.gov (United States)

    Jian, Liu; Shihua, Huang; Lü, He

    2015-04-01

    The basic parameters of a-Si:H/c-Si heterojunction solar cells, such as layer thickness, doping concentration, a-Si:H/c-Si interface defect density, and the work functions of the transparent conducting oxide (TCO) and back surface field (BSF) layer, are crucial factors that influence the carrier transport properties and the efficiency of the solar cells. The correlations between the carrier transport properties and these parameters and the performance of a-Si:H/c-Si heterojunction solar cells were investigated using the AFORS-HET program. Through the analysis and optimization of a TCO/n-a-Si:H/i-a-Si:H/p-c-Si/p+-a-Si:H/Ag solar cell, a photoelectric conversion efficiency of 27.07% (VOC) 749 mV, JSC: 42.86 mA/cm2, FF: 84.33%) was obtained through simulation. An in-depth understanding of the transport properties can help to improve the efficiency of a-Si:H/c-Si heterojunction solar cells, and provide useful guidance for actual heterojunction with intrinsic thin layer (HIT) solar cell manufacturing. Project supported by the National Natural Science Foundation of China (No. 61076055), the Open Project Program of Surface Physics Laboratory (National Key Laboratory) of Fudan University (No. FDS-KL2011-04), the Zhejiang Provincial Science and Technology Key Innovation Team (No. 2011R50012), and the Zhejiang Provincial Key Laboratory (No. 2013E10022).

  6. Industrial Silicon Wafer Solar Cells

    Directory of Open Access Journals (Sweden)

    Dirk-Holger Neuhaus

    2007-01-01

    Full Text Available In 2006, around 86% of all wafer-based silicon solar cells were produced using screen printing to form the silver front and aluminium rear contacts and chemical vapour deposition to grow silicon nitride as the antireflection coating onto the front surface. This paper reviews this dominant solar cell technology looking into state-of-the-art equipment and corresponding processes for each process step. The main efficiency losses of this type of solar cell are analyzed to demonstrate the future efficiency potential of this technology. In research and development, more various advanced solar cell concepts have demonstrated higher efficiencies. The question which arises is “why are new solar cell concepts not transferred into industrial production more frequently?”. We look into the requirements a new solar cell technology has to fulfill to have an advantage over the current approach. Finally, we give an overview of high-efficiency concepts which have already been transferred into industrial production.

  7. Efficient Semitransparent Perovskite Solar Cells Using a Transparent Silver Electrode and Four-Terminal Perovskite/Silicon Tandem Device Exploration

    Directory of Open Access Journals (Sweden)

    Dazheng Chen

    2018-01-01

    Full Text Available Four-terminal tandem solar cells employing a perovskite top cell and crystalline silicon (Si bottom cell offer a simpler pathway to surpass the efficiency limit of market-leading single-junction silicon solar cells. To obtain cost-effective top cells, it is crucial to develop transparent conductive electrodes with low parasitic absorption and manufacturing cost. The commonly used indium tin oxide (ITO shows some drawbacks, like the increasing prices and high-energy magnetron sputtering process. Transparent metal electrodes are promising candidates owing to the simple evaporation process, facile process conditions, and high conductivity, and the cheaper silver (Ag electrode with lower parasitic absorption than gold may be the better choice. In this work, efficient semitransparent perovskite solar cells (PSCs were firstly developed by adopting the composite cathode of an ultrathin Ag electrode at its percolation threshold thickness (11 nm, a molybdenum oxide optical coupling layer, and a bathocuproine interfacial layer. The resulting power conversion efficiency (PCE is 13.38% when the PSC is illuminated from the ITO side and the PCE is 8.34% from the Ag side, and no obvious current hysteresis can be observed. Furthermore, by stacking an industrial Si bottom cell (PCE = 14.2% to build a four-terminal architecture, the overall PCEs of 17.03% (ITO side and 11.60% (Ag side can be obtained, which are 27% and 39% higher, respectively, than those of the perovskite top cell. Also, the PCE of the tandem cell has exceeded that of the reference Si solar cell by about 20%. This work provides an outlook to fabricate high-performance solar cells via the cost-effective pathway.

  8. Nanosecond pulsed laser ablated sub-10 nm silicon nanoparticles for improving photovoltaic conversion efficiency of commercial solar cells

    Science.gov (United States)

    Rasouli, H. R.; Ghobadi, A.; Ulusoy Ghobadi, T. G.; Ates, H.; Topalli, K.; Okyay, A. K.

    2017-10-01

    In this paper, we demonstrate the enhancement of photovoltaic (PV) solar cell efficiency using luminescent silicon nanoparticles (Si-NPs). Sub-10 nm Si-NPs are synthesized via pulsed laser ablation technique. These ultra-small Si nanoparticles exhibit photoluminescence (PL) character tics at 425 and 517 nm upon excitation by ultra-violet (UV) light. Therefore, they can act as secondary light sources that convert high energetic photons to ones at visible range. This down-shifting property can be a promising approach to enhance PV performance of the solar cell, regardless of its type. As proof-of-concept, polycrystalline commercial solar cells with an efficiency of ca 10% are coated with these luminescent Si-NPs. The nanoparticle-decorated solar cells exhibit up to 1.64% increase in the external quantum efficiency with respect to the uncoated reference cells. According to spectral photo-responsivity characterizations, the efficiency enhancement is stronger in wavelengths below 550 nm. As expected, this is attributed to down-shifting via Si-NPs, which is verified by their PL characteristics. The results presented here can serve as a beacon for future performance enhanced devices in a wide range of applications based on Si-NPs including PVs and LED applications.

  9. Elite silicon and solar power

    International Nuclear Information System (INIS)

    Yasamanov, N.A.

    2000-01-01

    The article is of popular character, the following issues being considered: conversion of solar energy into electric one, solar batteries in space and on the Earth, growing of silicon large-size crystals, source material problems relating to silicon monocrystals production, outlooks of solar silicon batteries production [ru

  10. Indium oxide/n-silicon heterojunction solar cells

    Science.gov (United States)

    Feng, Tom; Ghosh, Amal K.

    1982-12-28

    A high photo-conversion efficiency indium oxide/n-silicon heterojunction solar cell is spray deposited from a solution containing indium trichloride. The solar cell exhibits an Air Mass One solar conversion efficiency in excess of about 10%.

  11. Atomic layer deposition for high-efficiency crystalline silicon solar cells

    NARCIS (Netherlands)

    Macco, B.; van de Loo, B.W.H.; Kessels, W.M.M.; Bachmann, J.

    2017-01-01

    This chapter illustrates that Atomic Layer Deposition (ALD) is in fact an enabler of novel high-efficiency Si solar cells, owing to its merits such as a high material quality, precise thickness control, and the ability to prepare film stacks in a well-controlled way. It gives an overview of the

  12. Perovskite/silicon-based heterojunction tandem solar cells with 14.8% conversion efficiency via adopting ultrathin Au contact

    Science.gov (United States)

    Fan, Lin; Wang, Fengyou; Liang, Junhui; Yao, Xin; Fang, Jia; Zhang, Dekun; Wei, Changchun; Zhao, Ying; Zhang, Xiaodan

    2017-01-01

    A rising candidate for upgrading the performance of an established narrow-bandgap solar technology without adding much cost is to construct the tandem solar cells from a crystalline silicon bottom cell and a high open-circuit voltage top cell. Here, we present a four-terminal tandem solar cell architecture consisting of a self-filtered planar architecture perovskite top cell and a silicon heterojunction bottom cell. A transparent ultrathin gold electrode has been used in perovskite solar cells to achieve a semi-transparent device. The transparent ultrathin gold contact could provide a better electrical conductivity and optical reflectance-scattering to maintain the performance of the top cell compared with the traditional metal oxide contact. The four-terminal tandem solar cell yields an efficiency of 14.8%, with contributions of the top (8.98%) and the bottom cell (5.82%), respectively. We also point out that in terms of optical losses, the intermediate contact of self-filtered tandem architecture is the uppermost problem, which has been addressed in this communication, and the results show that reducing the parasitic light absorption and improving the long wavelength range transmittance without scarifying the electrical properties of the intermediate hole contact layer are the key issues towards further improving the efficiency of this architecture device. Project supported by the International Cooperation Projects of the Ministry of Science and Technology (No. 2014DFE60170), the National Natural Science Foundation of China (Nos. 61474065, 61674084), the Tianjin Research Key Program of Application Foundation and Advanced Technology (No. 15JCZDJC31300), the Key Project in the Science & Technology Pillar Program of Jiangsu Province (No. BE2014147-3), and the 111 Project (No. B16027).

  13. Efficiency Enhancement of Silicon Heterojunction Solar Cells via Photon Management Using Graphene Quantum Dot as Downconverters

    KAUST Repository

    Tsai, Meng-Lin; Tu, Wei-Chen; Tang, Libin; Wei, Tzu-Chiao; Wei, Wan-Rou; Lau, Shu Ping; Chen, Lih-Juann; He, Jr-Hau

    2015-01-01

    By employing graphene quantum dots (GQDs), we have achieved a high efficiency of 16.55% in n-type Si heterojunction solar cells. The efficiency enhancement is based on the photon downconversion phenomenon of GQDs to make more photons absorbed in the depletion region for effective carrier separation, leading to the enhanced photovoltaic effect. The short circuit current and the fill factor are increased from 35.31 to 37.47 mA/cm2 and 70.29% to 72.51%, respectively. The work demonstrated here holds the promise for incorporating graphene-based materials in commercially available solar devices for developing ultra-high efficiency photovoltaic cells in the future.

  14. Efficiency Enhancement of Silicon Heterojunction Solar Cells via Photon Management Using Graphene Quantum Dot as Downconverters

    KAUST Repository

    Tsai, Meng-Lin

    2015-12-16

    By employing graphene quantum dots (GQDs), we have achieved a high efficiency of 16.55% in n-type Si heterojunction solar cells. The efficiency enhancement is based on the photon downconversion phenomenon of GQDs to make more photons absorbed in the depletion region for effective carrier separation, leading to the enhanced photovoltaic effect. The short circuit current and the fill factor are increased from 35.31 to 37.47 mA/cm2 and 70.29% to 72.51%, respectively. The work demonstrated here holds the promise for incorporating graphene-based materials in commercially available solar devices for developing ultra-high efficiency photovoltaic cells in the future.

  15. Silica nanoparticles on front glass for efficiency enhancement in superstrate-type amorphous silicon solar cells

    Science.gov (United States)

    Das, Sonali; Banerjee, Chandan; Kundu, Avra; Dey, Prasenjit; Saha, Hiranmay; Datta, Swapan K.

    2013-10-01

    Antireflective coating on front glass of superstrate-type single junction amorphous silicon solar cells (SCs) has been applied using highly monodispersed and stable silica nanoparticles (NPs). The silica NPs having 300 nm diameter were synthesized by Stober technique where the size of the NPs was controlled by varying the alcohol medium. The synthesized silica NPs were analysed by dynamic light scattering technique and Fourier transform infrared spectroscopy. The NPs were spin coated on glass side of fluorinated tin oxide (SnO2: F) coated glass superstrate and optimization of the concentration of the colloidal solution, spin speed and number of coated layers was done to achieve minimum reflection characteristics. An estimation of the distribution of the NPs for different optimization parameters has been done using field-emission scanning electron microscopy. Subsequently, the transparent conducting oxide coated glass with the layer having the minimum reflectance is used for fabrication of amorphous silicon SC. Electrical analysis of the fabricated cell indicates an improvement of 6.5% in short-circuit current density from a reference of 12.40 mA cm-2 while the open circuit voltage and the fill factor remains unaltered. A realistic optical model has also been proposed to gain an insight into the system.

  16. Silica nanoparticles on front glass for efficiency enhancement in superstrate-type amorphous silicon solar cells

    International Nuclear Information System (INIS)

    Das, Sonali; Kundu, Avra; Dey, Prasenjit; Saha, Hiranmay; Datta, Swapan K; Banerjee, Chandan

    2013-01-01

    Antireflective coating on front glass of superstrate-type single junction amorphous silicon solar cells (SCs) has been applied using highly monodispersed and stable silica nanoparticles (NPs). The silica NPs having 300 nm diameter were synthesized by Stober technique where the size of the NPs was controlled by varying the alcohol medium. The synthesized silica NPs were analysed by dynamic light scattering technique and Fourier transform infrared spectroscopy. The NPs were spin coated on glass side of fluorinated tin oxide (SnO 2 : F) coated glass superstrate and optimization of the concentration of the colloidal solution, spin speed and number of coated layers was done to achieve minimum reflection characteristics. An estimation of the distribution of the NPs for different optimization parameters has been done using field-emission scanning electron microscopy. Subsequently, the transparent conducting oxide coated glass with the layer having the minimum reflectance is used for fabrication of amorphous silicon SC. Electrical analysis of the fabricated cell indicates an improvement of 6.5% in short-circuit current density from a reference of 12.40 mA cm −2 while the open circuit voltage and the fill factor remains unaltered. A realistic optical model has also been proposed to gain an insight into the system. (paper)

  17. Photoinduced Field-Effect Passivation from Negative Carrier Accumulation for High-Efficiency Silicon/Organic Heterojunction Solar Cells.

    Science.gov (United States)

    Liu, Zhaolang; Yang, Zhenhai; Wu, Sudong; Zhu, Juye; Guo, Wei; Sheng, Jiang; Ye, Jichun; Cui, Yi

    2017-12-26

    Carrier recombination and light management of the dopant-free silicon/organic heterojunction solar cells (HSCs) based on poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) are the critical factors in developing high-efficiency photovoltaic devices. However, the traditional passivation technologies can hardly provide efficient surface passivation on the front surface of Si. In this study, a photoinduced electric field was induced in a bilayer antireflective coating (ARC) of polydimethylsiloxane (PDMS) and titanium oxide (TiO 2 ) films, due to formation of an accumulation layer of negative carriers (O 2 - species) under UV (sunlight) illumination. This photoinduced field not only suppressed the silicon surface recombination but also enhanced the built-in potential of HSCs with 84 mV increment. In addition, this photoactive ARC also displayed the outstanding light-trapping capability. The front PEDOT:PSS/Si HSC with the saturated O 2 - received a champion PCE of 15.51% under AM 1.5 simulated sunlight illumination. It was clearly demonstrated that the photoinduced electric field was a simple, efficient, and low-cost method for the surface passivation and contributed to achieve a high efficiency when applied in the Si/PEDOT:PSS HSCs.

  18. Simulation and experimental study of a novel bifacial structure of silicon heterojunction solar cell for high efficiency and low cost

    Science.gov (United States)

    Huang, Haibin; Tian, Gangyu; Zhou, Lang; Yuan, Jiren; Fahrner, Wolfgang R.; Zhang, Wenbin; Li, Xingbing; Chen, Wenhao; Liu, Renzhong

    2018-03-01

    A novel structure of Ag grid/SiN x /n+-c-Si/n-c-Si/i-a-Si:H/p+-a-Si:H/TCO/Ag grid was designed to increase the efficiency of bifacial amorphous/crystalline silicon-based solar cells and reduce the rear material consumption and production cost. The simulation results show that the new structure obtains higher efficiency compared with the typical bifacial amorphous/crystalline silicon-based solar cell because of an increase in the short-circuit current (J sc), while retaining the advantages of a high open-circuit voltage, low temperature coefficient, and good weak-light performance. Moreover, real cells composed of the novel structure with dimensions of 75 mm ×75 mm were fabricated by a special fabrication recipe based on industrial processes. Without parameter optimization, the cell efficiency reached 21.1% with the J sc of 41.7 mA/cm2. In addition, the novel structure attained 28.55% potential conversion efficiency under an illumination of AM 1.5 G, 100 mW/cm2. We conclude that the configuration of the Ag grid/SiN x /n+-c-Si/n-c-Si/i-a-Si:H/p+-a-Si:H/TCO/Ag grid is a promising structure for high efficiency and low cost. Project supported by the Jiangxi Provincial Key Research and Development Foundation, China (Grant No. 2016BBH80043), the Open Fund of Jiangsu Key Laboratory of Materials and Technology for Energy Conversion, China (Grant No. NJ20160032), and the National Natural Science Foundation of China (Grant Nos. 61741404, 61464007, and 51561022).

  19. Effect of the back surface topography on the efficiency in silicon solar cells

    International Nuclear Information System (INIS)

    Guo Aijuan; Ye Famin; Feng Shimeng; Guo Lihui; Ji Dong

    2009-01-01

    Different processes are used on the back surface of silicon wafers to form cells falling into three groups: textured, planar, and sawed-off pyramid back surface. The characteristic parameters of the cells, I SC , V OC , FF, Pm, and E ff , are measured. All these parameters of the planar back surface cells are the best. The FF, Pm, and E ff of sawed-off pyramid back surface cells are superior to textured back surface cells, although I SC and V OC are lower. The parasitic resistance is analyzed to explain the higher FF of the sawed-off pyramid back surface cells. The cross-section scanning electron microscopy (SEM) pictures show the uniformity of the aluminum-silicon alloy, which has an important effect on the back surface recombination velocity and the ohmic contact. The measured value of the aluminum back surface field thickness in the SEM picture is in good agreement with the theoretical value deduced from the Al-Si phase diagram. It is shown in an external quantum efficiency (EQE) diagram that the planar back surface has the best response to a wavelength between 440 and 1000 nm and the sawed-off back surface has a better long wavelength response.

  20. Enhanced efficiency of hybrid amorphous silicon solar cells based on single-walled carbon nanotubes/polymer composite thin film.

    Science.gov (United States)

    Rajanna, Pramod Mulbagal; Gilshteyn, Evgenia; Yagafarov, Timur; Alekseeva, Alena; Anisimov, Anton; Sergeev, Oleg; Neumueller, Alex; Bereznev, Sergei; Maricheva, Jelena; Nasibulin, Albert

    2018-01-09

    We report a simple approach to fabricate hybrid solar cells (HSCs) based on a single-walled carbon nanotube (SWCNT) film and a thin film hydrogenated amorphous silicon (a-Si:H). Randomly oriented high quality SWCNTs with an enhanced conductivity by means of poly(3,4-ethylenedioxythiophene) polystyrene sulfonate are used as a window layer and a front electrode. A series of HSCs are fabricated in ambient conditions with different SWCNT film thicknesses. The polymethylmethacrylate layer drop-casted on fabricated HSCs reduces the reflection fourfold and enhances the short-circuit Jsc, open-circuit Voc, and efficiency by nearly 10%. A state-of-the-art J-V performance is shown for SWCNT/a-Si HSC with an open-circuit voltage of 900 mV and efficiency of 3.4% under simulated one-sun AM 1.5G direct illumination. © 2018 IOP Publishing Ltd.

  1. Enhanced efficiency of hybrid amorphous silicon solar cells based on single-walled carbon nanotubes and polymer composite thin film

    Science.gov (United States)

    Rajanna, Pramod M.; Gilshteyn, Evgenia P.; Yagafarov, Timur; Aleekseeva, Alena K.; Anisimov, Anton S.; Neumüller, Alex; Sergeev, Oleg; Bereznev, Sergei; Maricheva, Jelena; Nasibulin, Albert G.

    2018-03-01

    We report a simple approach to fabricate hybrid solar cells (HSCs) based on a single-walled carbon nanotube (SWCNT) film and thin film hydrogenated amorphous silicon (a-Si:H). Randomly oriented high-quality SWCNTs with conductivity enhanced by means of poly(3,4-ethylenedioxythiophene) polystyrene sulfonate are used as a window layer and a front electrode. A series of HSCs are fabricated in ambient conditions with varying SWCNT film thicknesses. The polymethylmethacrylate layer drop-casted on fabricated HSCs reduces the reflection fourfold and enhances the short-circuit J sc , open-circuit V oc , and efficiency by nearly 10%. A state-of-the-art J-V performance is shown for SWCNT/a-Si HSC with an open-circuit voltage of 900 mV and an efficiency of 3.4% under simulated one-sun AM 1.5 G direct illumination.

  2. Indium tin oxide thin-films prepared by vapor phase pyrolysis for efficient silicon based solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Simashkevich, Alexei, E-mail: alexeisimashkevich@hotmail.com [Institute of Applied Physics, 5 Academiei str., Chisinau, MD-2028, Republic of Moldova (Moldova, Republic of); Serban, Dormidont; Bruc, Leonid; Curmei, Nicolai [Institute of Applied Physics, 5 Academiei str., Chisinau, MD-2028, Republic of Moldova (Moldova, Republic of); Hinrichs, Volker [Institut für Heterogene Materialsysteme, Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Lise-Meitner Campus, Hahn-Meitner-Platz 1, 14109 Berlin (Germany); Rusu, Marin [Institute of Applied Physics, 5 Academiei str., Chisinau, MD-2028, Republic of Moldova (Moldova, Republic of); Institut für Heterogene Materialsysteme, Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Lise-Meitner Campus, Hahn-Meitner-Platz 1, 14109 Berlin (Germany)

    2016-07-01

    The vapor phase pyrolysis deposition method was developed for the preparation of indium tin oxide (ITO) thin films with thicknesses ranging between 300 and 400 nm with the sheet resistance of 10–15 Ω/sq. and the transparency in the visible region of the spectrum over 80%. The layers were deposited on the (100) surface of the n-type silicon wafers with the charge carriers concentration of ~ 10{sup 15} cm{sup −3}. The morphology of the ITO layers deposited on Si wafers with different surface morphologies, e.g., smooth (polished), rough (irregularly structured) and textured (by inversed pyramids) was investigated. The as-deposited ITO thin films consist of crystalline columns with the height of 300–400 nm and the width of 50–100 nm. Photovoltaic parameters of mono- and bifacial solar cells of Cu/ITO/SiO{sub 2}/n–n{sup +} Si/Cu prepared on Si (100) wafers with different surface structures were studied and compared. A maximum efficiency of 15.8% was achieved on monofacial solar cell devices with the textured Si surface. Bifacial photovoltaic devices from 100 μm thick Si wafers with the smooth surface have demonstrated efficiencies of 13.0% at frontal illumination and 10% at rear illumination. - Highlights: • ITO thin films prepared by vapor phase pyrolysis on Si (100) wafers with a smooth (polished), rough (irregularly structured) and textured (by inversed pyramids) surface. • Monofacial ITO/SiO2/n-n+Si solar cells with an efficiency of 15.8% prepared and bifacial PV devices with front- and rear-side efficiencies up to 13% demonstrated. • Comparative studies of photovoltaic properties of solar cells with different morphologies of the Si wafer surface presented.

  3. Technology computer aided design of 29.5% efficient perovskite/interdigitated back contact silicon heterojunction mechanically stacked tandem solar cell for energy-efficient applications

    Science.gov (United States)

    Pandey, Rahul; Chaujar, Rishu

    2017-04-01

    A 29.5% efficient perovskite/SiC passivated interdigitated back contact silicon heterojunction (IBC-SiHJ) mechanically stacked tandem solar cell device has been designed and simulated. This is a substantial improvement of 40% and 15%, respectively, compared to the transparent perovskite solar cell (21.1%) and Si solar cell (25.6%) operated individually. The perovskite solar cell has been used as a top subcell, whereas 250- and 25-μm-thick IBC-SiHJ solar cells have been used as bottom subcells. The realistic technology computer aided design analysis has been performed to understand the physical processes in the device and to make reliable predictions of the behavior. The performance of the top subcell has been obtained for different acceptor densities and hole mobility in Spiro-MeOTAD along with the impact of counter electrode work function. To incorporate the effect of material quality, the influence of carrier lifetimes has also been studied for perovskite top and IBC-SiHJ bottom subcells. The optical and electrical behavior of the devices has been obtained for both standalone as well as tandem configuration. Results reported in this study reveal that the proposed four-terminal tandem device may open a new door for cost-effective and energy-efficient applications.

  4. Intermediate Bandgap Solar Cells From Nanostructured Silicon

    Energy Technology Data Exchange (ETDEWEB)

    Black, Marcie [Bandgap Engineering, Lincoln, MA (United States)

    2014-10-30

    This project aimed to demonstrate increased electronic coupling in silicon nanostructures relative to bulk silicon for the purpose of making high efficiency intermediate bandgap solar cells using silicon. To this end, we formed nanowires with controlled crystallographic orientation, small diameter, <111> sidewall faceting, and passivated surfaces to modify the electronic band structure in silicon by breaking down the symmetry of the crystal lattice. We grew and tested these silicon nanowires with <110>-growth axes, which is an orientation that should produce the coupling enhancement.

  5. Silicon Nanowire/Polymer Hybrid Solar Cell-Supercapacitor: A Self-Charging Power Unit with a Total Efficiency of 10.5.

    Science.gov (United States)

    Liu, Ruiyuan; Wang, Jie; Sun, Teng; Wang, Mingjun; Wu, Changsheng; Zou, Haiyang; Song, Tao; Zhang, Xiaohong; Lee, Shuit-Tong; Wang, Zhong Lin; Sun, Baoquan

    2017-07-12

    An integrated self-charging power unit, combining a hybrid silicon nanowire/polymer heterojunction solar cell with a polypyrrole-based supercapacitor, has been demonstrated to simultaneously harvest solar energy and store it. By efficiency enhancement of the hybrid nanowire solar cells and a dual-functional titanium film serving as conjunct electrode of the solar cell and supercapacitor, the integrated system is able to yield a total photoelectric conversion to storage efficiency of 10.5%, which is the record value in all the integrated solar energy conversion and storage system. This system may not only serve as a buffer that diminishes the solar power fluctuations from light intensity, but also pave its way toward cost-effective high efficiency self-charging power unit. Finally, an integrated device based on ultrathin Si substrate is demonstrated to expand its feasibility and potential application in flexible energy conversion and storage devices.

  6. Silicon Solar Cell Turns 50

    Energy Technology Data Exchange (ETDEWEB)

    Perlin, J.

    2004-08-01

    This short brochure describes a milestone in solar (or photovoltaic, PV) research-namely, the 50th anniversary of the invention of the first viable silicon solar cell by three researchers at Bell Laboratories.

  7. Solar cell of 6.3% efficiency employing high deposition rate (8 nm/s) microcrystalline silicon photovoltaic layer

    Energy Technology Data Exchange (ETDEWEB)

    Sobajima, Yasushi; Nishino, Mitsutoshi; Fukumori, Taiga; Kurihara, Masanori; Higuchi, Takuya; Nakano, Shinya; Toyama, Toshihiko; Okamoto, Hiroaki [Department of Systems Innovation, Graduate School of Engineering Science, Osaka University, Toyonaka, Machikaneyama-cho 1-3, Osaka 560-8531 (Japan)

    2009-06-15

    Microcrystalline silicon ({mu}c-Si) films deposited at high growth rates up to 8.1 nm/s prepared by very-high-frequency-plasma-enhanced chemical vapor deposition (VHF-PECVD) at 18-24 Torr have been investigated. The relation between the deposition rates and input power revealed the depletion of silane. Under high-pressure deposition (HPD) conditions, the structural properties were improved. Furthermore, applying {mu}c-Si to n-i-p solar cells, short-circuit current density (J{sub SC}) was increased in accordance with the improvement of microstructure of i-layer. As a result, a conversion efficiency of 6.30% has been achieved employing the i-layer deposited at 8.1 nm/s under the HPD conditions. (author)

  8. Biomimetic spiral grating for stable and highly efficient absorption in crystalline silicon thin-film solar cells

    KAUST Repository

    Hou, Jin; Hong, Wei; Li, Xiaohang; Yang, Chunyong; Chen, Shaoping

    2017-01-01

    By emulating the phyllotaxis structure of natural plants, which has an efficient and stable light capture capability, a two-dimensional spiral grating is introduced on the surface of crystalline silicon solar cells to obtain both efficient and stable light absorption. Using the rigorous coupled wave analysis method, the absorption performance on structural parameter variations of spiral gratings is investigated firstly. Owing to diffraction resonance and excellent superficies antireflection, the integrated absorption of the optimal spiral grating cell is raised by about 77 percent compared with the conventional slab cell. Moreover, though a 15 percent deviation of structural parameters from the optimal spiral grating is applied, only a 5 percent decrease of the absorption is observed. This reveals that the performance of the proposed grating would tolerate large structural variations. Furthermore, the angular and polarization dependence on the absorption of the optimized cell is studied. For average polarizations, a small decrease of only 11 percent from the maximum absorption is observed within an incident angle ranging from −70 to 70 degrees. The results show promising application potentials of the biomimetic spiral grating in the solar cell.

  9. Biomimetic spiral grating for stable and highly efficient absorption in crystalline silicon thin-film solar cells

    KAUST Repository

    Hou, Jin

    2017-09-12

    By emulating the phyllotaxis structure of natural plants, which has an efficient and stable light capture capability, a two-dimensional spiral grating is introduced on the surface of crystalline silicon solar cells to obtain both efficient and stable light absorption. Using the rigorous coupled wave analysis method, the absorption performance on structural parameter variations of spiral gratings is investigated firstly. Owing to diffraction resonance and excellent superficies antireflection, the integrated absorption of the optimal spiral grating cell is raised by about 77 percent compared with the conventional slab cell. Moreover, though a 15 percent deviation of structural parameters from the optimal spiral grating is applied, only a 5 percent decrease of the absorption is observed. This reveals that the performance of the proposed grating would tolerate large structural variations. Furthermore, the angular and polarization dependence on the absorption of the optimized cell is studied. For average polarizations, a small decrease of only 11 percent from the maximum absorption is observed within an incident angle ranging from −70 to 70 degrees. The results show promising application potentials of the biomimetic spiral grating in the solar cell.

  10. Improvement of conversion efficiency of silicon solar cells using up-conversion molybdate La2Mo2O9:Yb,R (R=Er, Ho) phosphors

    Institute of Scientific and Technical Information of China (English)

    Yen-Chi Chen; Teng-Ming Chen

    2011-01-01

    The goal of this work was aimed to improve the power conversion efficiency of single crystalline silicon-based photovoltaic cells by using the solar spectral conversion principle,which employs an up-conversion phosphor to convert a low energy infrared photon to the more energetic visible photons to improve the spectral response.In this study,the surface of multicrystalline silicon solar cells was coated with an up-conversion molybdate phosphor to improve the spectral response of the solar cell in the ncar-infiared spectral range.The short circuit current (Isc),open circuit voltage (Voc),and conversion efficiency (η) of spectral conversion cells were measured.Preliminary experimental results revealed that the light conversion efficiency of a 1.5%-2.7% increase in Si-based cell was achieved.

  11. Numerical simulations: Toward the design of 27.6% efficient four-terminal semi-transparent perovskite/SiC passivated rear contact silicon tandem solar cell

    Science.gov (United States)

    Pandey, Rahul; Chaujar, Rishu

    2016-12-01

    In this work, a novel four-terminal perovskite/SiC-based rear contact silicon tandem solar cell device has been proposed and simulated to achieve 27.6% power conversion efficiency (PCE) under single AM1.5 illumination. 20.9% efficient semitransparent perovskite top subcell has been used for perovskite/silicon tandem architecture. The tandem structure of perovskite-silicon solar cells is a promising method to achieve efficient solar energy conversion at low cost. In the four-terminal tandem configuration, the cells are connected independently and hence avoids the need for current matching between top and bottom subcell, thus giving greater design flexibility. The simulation analysis shows, PCE of 27.6% and 22.4% with 300 μm and 10 μm thick rear contact Si bottom subcell, respectively. This is a substantial improvement comparing to transparent perovskite solar cell and c-Si solar cell operated individually. The impact of perovskite layer thickness, monomolecular, bimolecular, and trimolecular recombination have also been obtained on the performance of perovskite top subcell. Reported PCEs of 27.6% and 22.4% are 1.25 times and 1.42 times higher as compared to experimentally available efficiencies of 22.1% and 15.7% in 300 μm and 10 μm thick stand-alone silicon solar cell devices, respectively. The presence of SiC significantly suppressed the interface recombination in bottom silicon subcell. Detailed realistic technology computer aided design (TCAD) analysis has been performed to predict the behaviour of the device.

  12. Synthesis and Characterization of Antireflective ZnO Nanoparticles Coatings Used for Energy Improving Efficiency of Silicone Solar Cells

    Science.gov (United States)

    Pîslaru-Dǎnescu, Lucian; Chitanu, Elena; El-Leathey, Lucia-Andreea; Marinescu, Virgil; Marin, Dorian; Sbârcea, Beatrice-Gabriela

    2018-03-01

    The paper proposes a new and complex process for the synthesis of ZnO nanoparticles for antireflective coating corresponding to silicone solar cells applications. The process consists of two major steps: preparation of seed layer and hydrothermal growth of ZnO nanoparticles. Due to the fact that the seed layer morphology influences the ZnO nanoparticles proprieties, the process optimization of the seed layer preparation is necessary. Following the hydrothermal growth of the ZnO nanoparticles, antireflective coating of silicone solar cells is achieved. After determining the functional parameters of the solar cells provided either with glass or with ZnO, it is concluded that all the parameters values are superior in the case of solar cells with ZnO antireflection coating and are increasing along with the solar irradiance.

  13. Black Silicon Solar Cells with Black Ribbons

    DEFF Research Database (Denmark)

    Davidsen, Rasmus Schmidt; Tang, Peter Torben; Mizushima, Io

    2016-01-01

    We present the combination of mask-less reactive ion etch (RIE) texturing and blackened interconnecting ribbons as a method for obtaining all-black solar panels, while using conventional, front-contacted solar cells. Black silicon made by mask-less reactive ion etching has total, average...... in the range 15.7-16.3%. The KOH-textured reference cell had an efficiency of 17.9%. The combination of black Si and black interconnecting ribbons may result in aesthetic, all-black panels based on conventional, front-contacted silicon solar cells....... reflectance below 0.5% across a 156x156 mm2 silicon (Si) wafer. Black interconnecting ribbons were realized by oxidizing copper resulting in reflectance below 3% in the visible wavelength range. Screen-printed Si solar cells were realized on 156x156 mm2 black Si substrates with resulting efficiencies...

  14. Technological development for super-high efficiency solar cells. Technological development for super-high efficiency singlecrystalline silicon solar cells (super-high efficiency singlecrystalline Si solar cells); Chokokoritsu taiyo denchi no gijutsu kaihatsu. Chokokoritsu tankessho silicon taiyo denchi no gijutsu kaihatsu (chokokoritsu tankessho silicon taiyo denchi cell no gijutsu kaihatsu)

    Energy Technology Data Exchange (ETDEWEB)

    Tatsuta, M [New Energy and Industrial Technology Development Organization, Tokyo (Japan)

    1994-12-01

    This paper reports the study results on technological development of super-high efficiency singlecrystalline silicon solar cells in fiscal 1994. (1) On development of high-performance light receiving layer, the fine electrode for receiving surfaces was designed to reduce serial resistance, and the high-quality oxide passivation film was studied to reduce surface recombination velocity. (2) On development of forming technology of back heterojunction, the high-quality cell with B-doped fine crystalline Si film on its back was studied by heat treatment of the fine crystalline Si film, and the cell structure with high back reflectance of light was also studied. (3) On analysis for high-efficiency cells, the relation between the back recombination velocity at the interface between p-type substrate and back passivation film, and the internal collection efficiency as probe light was injected from the back, was calculated by numerical simulation. As a result, the cell back recombination velocity could be evaluated by measuring the spectral internal collection efficiency to back injection. 15 figs., 6 tabs.

  15. Three-Terminal Amorphous Silicon Solar Cells

    Directory of Open Access Journals (Sweden)

    Cheng-Hung Tai

    2011-01-01

    Full Text Available Many defects exist within amorphous silicon since it is not crystalline. This provides recombination centers, thus reducing the efficiency of a typical a-Si solar cell. A new structure is presented in this paper: a three-terminal a-Si solar cell. The new back-to-back p-i-n/n-i-p structure increased the average electric field in a solar cell. A typical a-Si p-i-n solar cell was also simulated for comparison using the same thickness and material parameters. The 0.28 μm-thick three-terminal a-Si solar cell achieved an efficiency of 11.4%, while the efficiency of a typical a-Si p-i-n solar cell was 9.0%. Furthermore, an efficiency of 11.7% was achieved by thickness optimization of the three-terminal solar cell.

  16. Hydrogen passivation of silicon sheet solar cells

    International Nuclear Information System (INIS)

    Tsuo, Y.S.; Milstein, J.B.

    1984-01-01

    Significant improvements in the efficiencies of dendritic web and edge-supported-pulling silicon sheet solar cells have been obtained after hydrogen ion beam passivation for a period of ten minutes or less. We have studied the effects of the hydrogen ion beam treatment with respect to silicon material damage, silicon sputter rate, introduction of impurities, and changes in reflectance. The silicon sputter rate for constant ion beam flux of 0.60 +- 0.05 mA/cm 2 exhibits a maximum at approximately 1400-eV ion beam energy

  17. Triple-junction thin-film silicon solar cell fabricated on periodically textured substrate with a stabilized efficiency of 13.6%

    Science.gov (United States)

    Sai, Hitoshi; Matsui, Takuya; Koida, Takashi; Matsubara, Koji; Kondo, Michio; Sugiyama, Shuichiro; Katayama, Hirotaka; Takeuchi, Yoshiaki; Yoshida, Isao

    2015-05-01

    We report a high-efficiency triple-junction thin-film silicon solar cell fabricated with the so-called substrate configuration. It was verified whether the design criteria for developing single-junction microcrystalline silicon (μc-Si:H) solar cells are applicable to multijunction solar cells. Furthermore, a notably high short-circuit current density of 32.9 mA/cm2 was achieved in a single-junction μc-Si:H cell fabricated on a periodically textured substrate with a high-mobility front transparent contacting layer. These technologies were also combined into a-Si:H/μc-Si:H/μc-Si:H triple-junction cells, and a world record stabilized efficiency of 13.6% was achieved.

  18. Simulation calculations of efficiencies and silicon consumption for CH3NH3PbI3−x−y Brx Cly/crystalline silicon tandem solar cells

    International Nuclear Information System (INIS)

    Zhang, Lili; Xie, Ziang; Qin, Guogang; Tian, Fuyang

    2017-01-01

    Much attention has been paid to two-subcell tandem solar cells (TSCs) with crystalline silicon (c-Si) as the bottom cell (TSC-Si). Previous works have pointed out that the optimal band gap, E g , of the top cell material for a TSC-Si is around 1.75 eV. With a tunable E g and better stability than MAPbI 3 (MA  =  CH 3 NH 3 ), MAPbI 3−x−y Br x Cl y is a promising candidate for the top cell material of a TSC-Si. In this work, calculations concerning the E g , refractive index and extinction coefficient of MAPbI 3−x−y Br x Cl y are performed using first-principles calculations including the spin–orbit coupling (SOC) effect. MAPbI 3−x−y Br x Cl y with five sets of x and y , which have a E g around 1.75 eV, are obtained. On this basis, absorption of the perovskite top cell is calculated applying the Lambert–Beer model (LBM) and the transfer matrix model (TMM), respectively. Considering the Auger recombination in the c-Si bottom cell and radiation coupling between the two subcells, the efficiencies for MAPbI 3−x−y Br x Cl y/ c-Si TSCs with the five sets of x and y are calculated. Among them, the MAPbI 2.375 Br 0.5 Cl 0.125 /c-Si TSC achieves the highest efficiency of 35.1% with a 440 nm thick top cell and 50 µ m thick c-Si when applying the LBM. When applying the TMM, the highest efficiency of 32.5% is predicted with a 580 nm thick MAPbI 2.375 Br 0.5 Cl 0.125 top cell and 50 µ m thick c-Si. Compared with the limiting efficiency of 27.1% for a 190 µ m thick c-Si single junction solar cell (SC), the MAPbI 2.375 Br 0.5 Cl 0.125 /c-Si TSC shows a superior performance of high efficiency and low c-Si consumption. (paper)

  19. Amorphous silicon crystalline silicon heterojunction solar cells

    CERN Document Server

    Fahrner, Wolfgang Rainer

    2013-01-01

    Amorphous Silicon/Crystalline Silicon Solar Cells deals with some typical properties of heterojunction solar cells, such as their history, the properties and the challenges of the cells, some important measurement tools, some simulation programs and a brief survey of the state of the art, aiming to provide an initial framework in this field and serve as a ready reference for all those interested in the subject. This book helps to "fill in the blanks" on heterojunction solar cells. Readers will receive a comprehensive overview of the principles, structures, processing techniques and the current developmental states of the devices. Prof. Dr. Wolfgang R. Fahrner is a professor at the University of Hagen, Germany and Nanchang University, China.

  20. Low cost silicon-on-ceramic photovoltaic solar cells

    Science.gov (United States)

    Koepke, B. G.; Heaps, J. D.; Grung, B. L.; Zook, J. D.; Sibold, J. D.; Leipold, M. H.

    1980-01-01

    A technique has been developed for coating low-cost mullite-based refractory substrates with thin layers of solar cell quality silicon. The technique involves first carbonizing one surface of the ceramic and then contacting it with molten silicon. The silicon wets the carbonized surface and, under the proper thermal conditions, solidifies as a large-grained sheet. Solar cells produced from this composite silicon-on-ceramic material have exhibited total area conversion efficiencies of ten percent.

  1. Improving Crystalline Silicon Solar Cell Efficiency Using Graded-Refractive-Index SiON/ZnO Nanostructures

    Directory of Open Access Journals (Sweden)

    Yung-Chun Tu

    2015-01-01

    Full Text Available The fabrication of silicon oxynitride (SiON/ZnO nanotube (NT arrays and their application in improving the energy conversion efficiency (η of crystalline Si-based solar cells (SCs are reported. The SiON/ZnO NT arrays have a graded-refractive-index that varies from 3.5 (Si to 1.9~2.0 (Si3N4 and ZnO to 1.72~1.75 (SiON to 1 (air. Experimental results show that the use of 0.4 μm long ZnO NT arrays coated with a 150 nm thick SiON film increases Δη/η by 39.2% under AM 1.5 G (100 mW/cm2 illumination as compared to that of regular SCs with a Si3N4/micropyramid surface. This enhancement can be attributed to SiON/ZnO NT arrays effectively releasing surface reflection and minimizing Fresnel loss.

  2. Efficiently-cooled plasmonic amorphous silicon solar cells integrated with a nano-coated heat-pipe plate

    Science.gov (United States)

    Zhang, Yinan; Du, Yanping; Shum, Clifford; Cai, Boyuan; Le, Nam Cao Hoai; Chen, Xi; Duck, Benjamin; Fell, Christopher; Zhu, Yonggang; Gu, Min

    2016-04-01

    Solar photovoltaics (PV) are emerging as a major alternative energy source. The cost of PV electricity depends on the efficiency of conversion of light to electricity. Despite of steady growth in the efficiency for several decades, little has been achieved to reduce the impact of real-world operating temperatures on this efficiency. Here we demonstrate a highly efficient cooling solution to the recently emerging high performance plasmonic solar cell technology by integrating an advanced nano-coated heat-pipe plate. This thermal cooling technology, efficient for both summer and winter time, demonstrates the heat transportation capability up to ten times higher than those of the metal plate and the conventional wickless heat-pipe plates. The reduction in temperature rise of the plasmonic solar cells operating under one sun condition can be as high as 46%, leading to an approximate 56% recovery in efficiency, which dramatically increases the energy yield of the plasmonic solar cells. This newly-developed, thermally-managed plasmonic solar cell device significantly extends the application scope of PV for highly efficient solar energy conversion.

  3. High-Efficiency Amorphous Silicon Alloy Based Solar Cells and Modules; Final Technical Progress Report, 30 May 2002--31 May 2005

    Energy Technology Data Exchange (ETDEWEB)

    Guha, S.; Yang, J.

    2005-10-01

    The principal objective of this R&D program is to expand, enhance, and accelerate knowledge and capabilities for development of high-efficiency hydrogenated amorphous silicon (a-Si:H) and amorphous silicon-germanium alloy (a-SiGe:H) related thin-film multijunction solar cells and modules with low manufacturing cost and high reliability. Our strategy has been to use the spectrum-splitting triple-junction structure, a-Si:H/a-SiGe:H/a-SiGe:H, to improve solar cell and module efficiency, stability, and throughput of production. The methodology used to achieve the objectives included: (1) explore the highest stable efficiency using the triple-junction structure deposited using RF glow discharge at a low rate, (2) fabricate the devices at a high deposition rate for high throughput and low cost, and (3) develop an optimized recipe using the R&D batch large-area reactor to help the design and optimization of the roll-to-roll production machines. For short-term goals, we have worked on the improvement of a-Si:H and a-SiGe:H alloy solar cells. a-Si:H and a-SiGe:H are the foundation of current a-Si:H based thin-film photovoltaic technology. Any improvement in cell efficiency, throughput, and cost reduction will immediately improve operation efficiency of our manufacturing plant, allowing us to further expand our production capacity.

  4. Research and development of photovoltaic power system. Research on surface passivation for high-efficiency silicon solar cells; Taiyoko hatsuden system no kenkyu kaihatsu. Hyomen passivation no kenkyu

    Energy Technology Data Exchange (ETDEWEB)

    Saito, T [Tokyo Univ. of Agriculture and Technology, Tokyo (Japan). Faculty of Technology

    1994-12-01

    This paper reports the result obtained during fiscal 1994 on research on surface passivation of high-efficiency silicon solar cells. In research on carrier recombination on SiO2/doped silicon interface, measurements were carried out on minority carrier life with respect to p-type silicon substrates with which phosphorus with high and low concentrations are diffused uniformly on the surface and non-uniformly on the back and then oxidized. The measurements were performed for the purpose of evaluating the carrier recombination at p-n junctions. Effective life time of oxidized test samples increased longer than that of prior to the oxidization as a result of effect of surface passivation contributing remarkably. In research on reduction in carrier recombination on SiO2/Si interface by using H radical annealing, experiments were conducted by using a method that uses more active H-atoms. As a result, it was revealed that the reduction effect is recognized at as low temperature as 200{degree}C, and photo-bias effect is also noticeable. Other research activities included analytic research on minority carrier recombination on micro crystalline silicon/crystalline silicon interface, and experimental research on evaluation of minority carrier life of poly-crystalline silicon wafers. 6 figs.

  5. Application of porous silicon in solar cell

    Science.gov (United States)

    Maniya, Nalin H.; Ashokan, Jibinlal; Srivastava, Divesh N.

    2018-05-01

    Silicon is widely used in solar cell applications with over 95% of all solar cells produced worldwide composed of silicon. Nanostructured thin porous silicon (PSi) layer acting as anti-reflecting coating is used in photovoltaic solar cells due to its advantages including simple and low cost fabrication, highly textured surfaces enabling lowering of reflectance, controllability of thickness and porosity of layer, and high surface area. PSi layers have previously been reported to reduce the reflection of light and replaced the conventional anti-reflective coating layers on solar cells. This can essentially improve the efficiency and decrease the cost of silicon solar cells. Here, we investigate the reflectance of different PSi layers formed by varying current density and etching time. PSi layers were formed by a combination of current density including 60 and 80 mA/cm2 and time for fabrication as 2, 4, 6, and 8 seconds. The fabricated PSi layers were characterized using reflectance spectroscopy and field emission scanning electron microscopy. Thickness and pore size of PSi layer were increased with increase in etching time and current density, respectively. The reflectance of PSi layers was decreased with increase in etching time until 6 seconds and increased again after 6 seconds, which was observed across both the current density. Reduction in reflectance indicates the increase of absorption of light by silicon due to the thin PSi layer. In comparison with the reflectance of silicon wafer, PSi layer fabricated at 80 mA/cm2 for 6 seconds gave the best result with reduction in reflectance up to 57%. Thus, the application of PSi layer as an effective anti-reflecting coating for the fabrication of solar cell has been demonstrated.

  6. Silicon nanowires for photovoltaic solar energy conversion.

    Science.gov (United States)

    Peng, Kui-Qing; Lee, Shuit-Tong

    2011-01-11

    Semiconductor nanowires are attracting intense interest as a promising material for solar energy conversion for the new-generation photovoltaic (PV) technology. In particular, silicon nanowires (SiNWs) are under active investigation for PV applications because they offer novel approaches for solar-to-electric energy conversion leading to high-efficiency devices via simple manufacturing. This article reviews the recent developments in the utilization of SiNWs for PV applications, the relationship between SiNW-based PV device structure and performance, and the challenges to obtaining high-performance cost-effective solar cells.

  7. Efficiency Enhancement of Nanotextured Black Silicon Solar Cells Using Al2O3/TiO2 Dual-Layer Passivation Stack Prepared by Atomic Layer Deposition.

    Science.gov (United States)

    Wang, Wei-Cheng; Tsai, Meng-Chen; Yang, Jason; Hsu, Chuck; Chen, Miin-Jang

    2015-05-20

    In this study, efficient nanotextured black silicon (NBSi) solar cells composed of silicon nanowire arrays and an Al2O3/TiO2 dual-layer passivation stack on the n(+) emitter were fabricated. The highly conformal Al2O3 and TiO2 surface passivation layers were deposited on the high-aspect-ratio surface of the NBSi wafers using atomic layer deposition. Instead of the single Al2O3 passivation layer with a negative oxide charge density, the Al2O3/TiO2 dual-layer passivation stack treated with forming gas annealing provides a high positive oxide charge density and a low interfacial state density, which are essential for the effective field-effect and chemical passivation of the n(+) emitter. In addition, the Al2O3/TiO2 dual-layer passivation stack suppresses the total reflectance over a broad range of wavelengths (400-1000 nm). Therefore, with the Al2O3/TiO2 dual-layer passivation stack, the short-circuit current density and efficiency of the NBSi solar cell were increased by 11% and 20%, respectively. In conclusion, a high efficiency of 18.5% was achieved with the NBSi solar cells by using the n(+)-emitter/p-base structure passivated with the Al2O3/TiO2 stack.

  8. Surface Passivation for Silicon Heterojunction Solar Cells

    NARCIS (Netherlands)

    Deligiannis, D.

    2017-01-01

    Silicon heterojunction solar cells (SHJ) are currently one of the most promising solar cell technologies in the world. The SHJ solar cell is based on a crystalline silicon (c-Si) wafer, passivated on both sides with a thin intrinsic hydrogenated amorphous silicon (a-Si:H) layer. Subsequently, p-type

  9. Method for forming indium oxide/n-silicon heterojunction solar cells

    Science.gov (United States)

    Feng, Tom; Ghosh, Amal K.

    1984-03-13

    A high photo-conversion efficiency indium oxide/n-silicon heterojunction solar cell is spray deposited from a solution containing indium trichloride. The solar cell exhibits an Air Mass One solar conversion efficiency in excess of about 10%.

  10. Performance improvement of silicon solar cells by nanoporous silicon coating

    Directory of Open Access Journals (Sweden)

    Dzhafarov T. D.

    2012-04-01

    Full Text Available In the present paper the method is shown to improve the photovoltaic parameters of screen-printed silicon solar cells by nanoporous silicon film formation on the frontal surface of the cell using the electrochemical etching. The possible mechanisms responsible for observed improvement of silicon solar cell performance are discussed.

  11. High-rate deposition of epitaxial layers for efficient low-temperature thin film epitaxial silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Oberbeck, L.; Schmidt, J.; Wagner, T.A.; Bergmann, R.B. [Stuttgart Univ. (Germany). Inst. of Physical Electronics

    2001-07-01

    Low-temperature deposition of Si for thin-film solar cells has previously been hampered by low deposition rates and low material quality, usually reflected by a low open-circuit voltage of these solar cells. In contrast, ion-assisted deposition produces Si films with a minority-carrier diffusion length of 40 {mu}m, obtained at a record deposition rate of 0.8 {mu}m/min and a deposition temperature of 650{sup o}C with a prebake at 810{sup o}C. A thin-film Si solar cell with a 20-{mu}m-thick epitaxial layer achieves an open-circuit voltage of 622 mV and a conversion efficiency of 12.7% without any light trapping structures and without high-temperature solar cell process steps. (author)

  12. Evaluation of carrier collection probability in bifacial interdigitated-back-contact crystalline silicon solar cells by the internal quantum efficiency mapping method

    Science.gov (United States)

    Tachibana, Tomihisa; Tanahashi, Katsuto; Mochizuki, Toshimitsu; Shirasawa, Katsuhiko; Takato, Hidetaka

    2018-04-01

    Bifacial interdigitated-back-contact (IBC) silicon solar cells with a high bifaciality of 0.91 were fabricated. Screen printing and firing technology were used to reduce the production cost. For the first time, the relationship between the rear side structure and carrier collection probability was evaluated using internal quantum efficiency (IQE) mapping. The measurement results showed that the screen-printed electrode and back surface field (BSF) area led to low IQE. The low carrier collection probability by BSF area can be explained by electrical shading effects. Thus, it is clear that the IQE mapping system is useful to evaluate the IBC cell.

  13. Radiation resistant passivation of silicon solar cells

    International Nuclear Information System (INIS)

    Swanson, R.M.; Gan, J.Y.; Gruenbaum, P.E.

    1991-01-01

    This patent describes a silicon solar cell having improved stability when exposed to concentrated solar radiation. It comprises a body of silicon material having a major surface for receiving radiation, a plurality of p and n conductivity regions in the body for collecting electrons and holes created by impinging radiation, and a passivation layer on the major surface including a first layer of silicon oxide in contact with the body and a polycrystalline silicon layer on the first layer of silicon oxide

  14. Monolithic Perovskite Silicon Tandem Solar Cells with Advanced Optics

    Energy Technology Data Exchange (ETDEWEB)

    Goldschmidt, Jan C.; Bett, Alexander J.; Bivour, Martin; Blasi, Benedikt; Eisenlohr, Johannes; Kohlstadt, Markus; Lee, Seunghun; Mastroianni, Simone; Mundt, Laura; Mundus, Markus; Ndione, Paul; Reichel, Christian; Schubert, Martin; Schulze, Patricia S.; Tucher, Nico; Veit, Clemens; Veurman, Welmoed; Wienands, Karl; Winkler, Kristina; Wurfel, Uli; Glunz, Stefan W.; Hermle, Martin

    2016-11-14

    For high efficiency monolithic perovskite silicon tandem solar cells, we develop low-temperature processes for the perovskite top cell, rear-side light trapping, optimized perovskite growth, transparent contacts and adapted characterization methods.

  15. Laser wafering for silicon solar

    International Nuclear Information System (INIS)

    Friedmann, Thomas Aquinas; Sweatt, William C.; Jared, Bradley Howell

    2011-01-01

    Current technology cuts solar Si wafers by a wire saw process, resulting in 50% 'kerf' loss when machining silicon from a boule or brick into a wafer. We want to develop a kerf-free laser wafering technology that promises to eliminate such wasteful wire saw processes and achieve up to a ten-fold decrease in the g/W p (grams/peak watt) polysilicon usage from the starting polysilicon material. Compared to today's technology, this will also reduce costs (∼20%), embodied energy, and green-house gas GHG emissions (∼50%). We will use short pulse laser illumination sharply focused by a solid immersion lens to produce subsurface damage in silicon such that wafers can be mechanically cleaved from a boule or brick. For this concept to succeed, we will need to develop optics, lasers, cleaving, and high throughput processing technologies capable of producing wafers with thicknesses < 50 (micro)m with high throughput (< 10 sec./wafer). Wafer thickness scaling is the 'Moore's Law' of silicon solar. Our concept will allow solar manufacturers to skip entire generations of scaling and achieve grid parity with commercial electricity rates. Yet, this idea is largely untested and a simple demonstration is needed to provide credibility for a larger scale research and development program. The purpose of this project is to lay the groundwork to demonstrate the feasibility of laser wafering. First, to design and procure on optic train suitable for producing subsurface damage in silicon with the required damage and stress profile to promote lateral cleavage of silicon. Second, to use an existing laser to produce subsurface damage in silicon, and third, to characterize the damage using scanning electron microscopy and confocal Raman spectroscopy mapping.

  16. Laser wafering for silicon solar.

    Energy Technology Data Exchange (ETDEWEB)

    Friedmann, Thomas Aquinas; Sweatt, William C.; Jared, Bradley Howell

    2011-03-01

    Current technology cuts solar Si wafers by a wire saw process, resulting in 50% 'kerf' loss when machining silicon from a boule or brick into a wafer. We want to develop a kerf-free laser wafering technology that promises to eliminate such wasteful wire saw processes and achieve up to a ten-fold decrease in the g/W{sub p} (grams/peak watt) polysilicon usage from the starting polysilicon material. Compared to today's technology, this will also reduce costs ({approx}20%), embodied energy, and green-house gas GHG emissions ({approx}50%). We will use short pulse laser illumination sharply focused by a solid immersion lens to produce subsurface damage in silicon such that wafers can be mechanically cleaved from a boule or brick. For this concept to succeed, we will need to develop optics, lasers, cleaving, and high throughput processing technologies capable of producing wafers with thicknesses < 50 {micro}m with high throughput (< 10 sec./wafer). Wafer thickness scaling is the 'Moore's Law' of silicon solar. Our concept will allow solar manufacturers to skip entire generations of scaling and achieve grid parity with commercial electricity rates. Yet, this idea is largely untested and a simple demonstration is needed to provide credibility for a larger scale research and development program. The purpose of this project is to lay the groundwork to demonstrate the feasibility of laser wafering. First, to design and procure on optic train suitable for producing subsurface damage in silicon with the required damage and stress profile to promote lateral cleavage of silicon. Second, to use an existing laser to produce subsurface damage in silicon, and third, to characterize the damage using scanning electron microscopy and confocal Raman spectroscopy mapping.

  17. Field Performance versus Standard Test Condition Efficiency of Tandem Solar Cells and the Specific Case of Perovskites/Silicon Devices

    KAUST Repository

    Dupre, Olivier

    2018-01-05

    Multijunction cells may offer a cost-effective route to boost the efficiency of industrial photovoltaics. For any technology to be deployed in the field, its performance under actual operating conditions is extremely important. In this perspective, we evaluate the impact of spectrum, light intensity, and module temperature variations on the efficiency of tandem devices with crystalline silicon bottom cells with a particular focus on perovskite top cells. We consider devices with different efficiencies and calculate their energy yields using field data from Denver. We find that annual losses due to differences between operating conditions and standard test conditions are similar for single-junction and four-terminal tandem devices. The additional loss for the two-terminal tandem configuration caused by current mismatch reduces its performance ratio by only 1.7% when an optimal top cell bandgap is used. Additionally, the unusual bandgap temperature dependence of perovskites is shown to have a positive, compensating effect on current mismatch.

  18. Development of low cost silicon solar cells by reusing the silicon saw dust collected during wafering process

    International Nuclear Information System (INIS)

    Zaidi, Z.I.; Raza, B.; Ahmed, M.; Sheikh, H.; Qazi, I.A.

    2002-01-01

    Silicon material due to its abundance in nature and maximum conversion efficiency has been successfully being used for the fabrication of electronic and photovoltaic devices such as ICs, diodes, transistors and solar cells. The 80% of the semiconductor industry is ruled by silicon material. Single crystal silicon solar cells are in use for both space and terrestrial application, due to the well developed technology and better efficiency than polycrystalline and amorphous silicon solar cells. The current research work is an attempt to reduce the cost of single crystal silicon solar cells by reusing the silicon saw dust obtained during the watering process. During the watering process about 45% Si material is wasted in the form of Si powder dust. Various waste powder silicon samples were analyzed using inductively Coupled Plasma (ICP) technique, for metallic impurities critical for solar grade silicon material. The results were evaluated from impurity and cost point of view. (author)

  19. Influence of the impurity-defect and impurity-impurity interactions on the crystalline silicon solar cells conversion efficiency; Influence des interactions impurete-defaut et impurete-impurete sur le rendement de conversion des cellules photovoltaiques au silicium cristallin

    Energy Technology Data Exchange (ETDEWEB)

    Dubois, S

    2007-05-15

    This study aims at understanding the influence of the impurity - defect interaction on the silicon solar cell performances. We studied first the case of single-crystalline silicon. We combined numerical simulations and experimental data providing new knowledge concerning metal impurities in silicon, to quantify the evolution of the conversion efficiency with the impurity concentration. Mainly due to the gettering effects, iron appears to be quite well tolerated. It is not the case for gold, diffusing too slowly. Hydrogenation effects were limited. We transposed then this study toward multi-crystalline silicon. Iron seems rather well tolerated, due to the gettering effects but also due to the efficiency of the hydrogenation. When slow diffusers are present, multi crystalline silicon is sensitive to thermal degradation. n-type silicon could solve this problem, this material being less sensitive to metal impurities. (author)

  20. Buried MoO x/Ag Electrode Enables High-Efficiency Organic/Silicon Heterojunction Solar Cells with a High Fill Factor.

    Science.gov (United States)

    Xia, Zhouhui; Gao, Peng; Sun, Teng; Wu, Haihua; Tan, Yeshu; Song, Tao; Lee, Shuit-Tong; Sun, Baoquan

    2018-04-25

    Silicon (Si)/organic heterojunction solar cells based on poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) and n-type Si have attracted wide interests because they promise cost-effectiveness and high-efficiency. However, the limited conductivity of PEDOT:PSS leads to an inefficient hole transport efficiency for the heterojunction device. Therefore, a high dense top-contact metal grid electrode is required to assure the efficient charge collection efficiency. Unfortunately, the large metal grid coverage ratio electrode would lead to undesirable optical loss. Here, we develop a strategy to balance PEDOT:PSS conductivity and grid optical transmittance via a buried molybdenum oxide/silver grid electrode. In addition, the grid electrode coverage ratio is optimized to reduce its light shading effect. The buried electrode dramatically reduces the device series resistance, which leads to a higher fill factor (FF). With the optimized buried electrode, a record FF of 80% is achieved for flat Si/PEDOT:PSS heterojunction devices. With further enhancement adhesion between the PEDOT:PSS film and Si substrate by a chemical cross-linkable silance, a power conversion efficiency of 16.3% for organic/textured Si heterojunction devices is achieved. Our results provide a path to overcome the inferior organic semiconductor property to enhance the organic/Si heterojunction solar cell.

  1. Study of double porous silicon surfaces for enhancement of silicon solar cell performance

    Science.gov (United States)

    Razali, N. S. M.; Rahim, A. F. A.; Radzali, R.; Mahmood, A.

    2017-09-01

    In this work, design and simulation of double porous silicon surfaces for enhancement of silicon solar cell is carried out. Both single and double porous structures are constructed by using TCAD ATHENA and TCAD DEVEDIT tools of the SILVACO software respectively. After the structures were created, I-V characteristics and spectral response of the solar cell were extracted using ATLAS device simulator. Finally, the performance of the simulated double porous solar cell is compared with the performance of both single porous and bulk-Si solar cell. The results showed that double porous silicon solar cell exhibited 1.8% efficiency compared to 1.3% and 1.2% for single porous silicon and bulk-Si solar cell.

  2. Effect of Silicon Nanowire on Crystalline Silicon Solar Cell Characteristics

    Directory of Open Access Journals (Sweden)

    Zahra Ostadmahmoodi Do

    2016-06-01

    Full Text Available Nanowires (NWs are recently used in several sensor or actuator devices to improve their ordered characteristics. Silicon nanowire (Si NW is one of the most attractive one-dimensional nanostructures semiconductors because of its unique electrical and optical properties. In this paper, silicon nanowire (Si NW, is synthesized and characterized for application in photovoltaic device. Si NWs are prepared using wet chemical etching method which is commonly used as a simple and low cost method for producing nanowires of the same substrate material. The process conditions are adjusted to find the best quality of Si NWs. Morphology of Si NWs is studied using a field emission scanning electron microscopic technique. An energy dispersive X-Ray analyzer is also used to provide elemental identification and quantitative compositional information. Subsequently, Schottky type solar cell samples are fabricated on Si and Si NWs using ITO and Ag contacts. The junction properties are calculated using I-V curves in dark condition and the solar cell I-V characteristics are obtained under incident of the standardized light of AM1.5. The results for the two mentioned Schottky solar cell samples are compared and discussed. An improvement in short circuit current and efficiency of Schottky solar cell is found when Si nanowires are employed.

  3. Silicon heterojunction solar cells

    CERN Document Server

    Fahrner, W R; Neitzert, H C

    2006-01-01

    The world of today must face up to two contradictory energy problems: on the one hand, there is the sharply growing consumer demand in countries such as China and India. On the other hand, natural resources are dwindling. Moreover, many of those countries which still possess substantial gas and oil supplies are politically unstable. As a result, renewable natural energy sources have received great attention. Among these, solar-cell technology is one of the most promising candidates. However, there still remains the problem of the manufacturing costs of such cells. Many attempts have been made

  4. Large area multicrystalline silicon solar cells with high efficiency. Final report; Grossflaechige multikristalline Silizium-Solarzellen mit hohen Wirkungsraden. Abschlussbericht

    Energy Technology Data Exchange (ETDEWEB)

    Ebest, G.; Erler, K.; Mrwa, A.; Ball, M.

    2001-09-01

    Solar cells were produced of wafers of die-cast and strip-drawn multicrystalline silicon and characterized. Production methods like SOD (spin-on doping), RTP (rapid thermal processing), PECVD (plasma enhanced chemical vapor deposition), RIE (reactive ion etching) and screen printing were investigated. The results are summarized as follows: 1. Layer resistance can be adjusted by variation of the RTP temperature cycle and by selecting appropriate doping materials (P507 by Filmtronics); 2. The low resistance required for screen printing metallization are obtained only with a different doping material (P8545SF-Filmtronics); 3. Metallized aluminium and copper require a 30 nm TiN layer as diffusion barrier; 4. Reflectivity will be reduced most effectively by RIE with chlorine gas on monocrystalline and multicrystalline silicon wafers. [German] Im Rahmen des Projektes wurden auf Wafern aus blockgegossenem und bandgezogenem multikristallinen Silizium Solarzellen hergestellt und charakterisiert. Fuer die Herstellung wurden Verfahren wie SOD (spin-on doping), RTP (rapid thermal processing), PECVD (plasma enhanced chemical vapor deposition), RIE (reactive ion etching) und Siebdruck untersucht. Die Ergebnisse lassen sich wie folgt zusammenfassen: 1. eine Einstellung des Schichtwiderstandes wird durch Variation des RTP-Temperaturzyklus sowie Auswahl verschiedener Dotierstoffe (P507 von Filmtronics) erreicht; 2. die fuer die Siebdruckmetallisierung erforderlichen geringen Schichtwiderstaende werden nur durch die Wahl eines anderen Dotierstoffes (P8545SF-Filmtronics) erreicht; 3. Aluminium- und Kupfermetallisierungen benoetigen eine 30 nm dicke TiN-Schicht als Diffusionsbarriere; und 4. die wirksamste Verminderung des Reflexionsgrades ist mittels RIE-Verfahren unter Verwendung von Chlorgas auf ein- und multikristalline Siliziumwafer erreichbar.

  5. A review of recent progress in heterogeneous silicon tandem solar cells

    Science.gov (United States)

    Yamaguchi, Masafumi; Lee, Kan-Hua; Araki, Kenji; Kojima, Nobuaki

    2018-04-01

    Silicon solar cells are the most established solar cell technology and are expected to dominate the market in the near future. As state-of-the-art silicon solar cells are approaching the Shockley-Queisser limit, stacking silicon solar cells with other photovoltaic materials to form multi-junction devices is an obvious pathway to further raise the efficiency. However, many challenges stand in the way of fully realizing the potential of silicon tandem solar cells because heterogeneously integrating silicon with other materials often degrades their qualities. Recently, above or near 30% silicon tandem solar cell has been demonstrated, showing the promise of achieving high-efficiency and low-cost solar cells via silicon tandem. This paper reviews the recent progress of integrating solar cell with other mainstream solar cell materials. The first part of this review focuses on the integration of silicon with III-V semiconductor solar cells, which is a long-researched topic since the emergence of III-V semiconductors. We will describe the main approaches—heteroepitaxy, wafer bonding and mechanical stacking—as well as other novel approaches. The second part introduces the integration of silicon with polycrystalline thin-film solar cells, mainly perovskites on silicon solar cells because of its rapid progress recently. We will also use an analytical model to compare the material qualities of different types of silicon tandem solar cells and project their practical efficiency limits.

  6. On the use of a charged tunnel layer as a hole collector to improve the efficiency of amorphous silicon thin-film solar cells

    International Nuclear Information System (INIS)

    Ke, Cangming; Sahraei, Nasim; Aberle, Armin G.; Stangl, Rolf; Peters, Ian Marius

    2015-01-01

    A new concept, using a negatively charged tunnel layer as a hole collector, is proposed and theoretically investigated for application in amorphous silicon thin-film solar cells. The concept features a glass/transparent conductive oxide/ultra-thin negatively charged tunnel layer/intrinsic a-Si:H/n-doped a-Si:H/metal structure. The key feature of this so called t + -i-n structure is the introduction of a negatively charged tunnel layer (attracting holes from the intrinsic absorber layer), which substitutes the highly recombination active p-doped a-Si:H layer in a conventional p-i-n configuration. Atomic layer deposited aluminum oxide (ALD AlO x ) is suggested as a potential candidate for such a tunnel layer. Using typical ALD AlO x parameters, a 27% relative efficiency increase (i.e., from 9.7% to 12.3%) is predicted theoretically for a single-junction a-Si:H solar cell on a textured superstrate. This prediction is based on parameters that reproduce the experimentally obtained external quantum efficiency and current-voltage characteristics of a conventional processed p-i-n a-Si:H solar cell, reaching 9.7% efficiency and serving as a reference. Subsequently, the p-doped a-Si:H layer is replaced by the tunnel layer (studied by means of numerical device simulation). Using a t + -i-n configuration instead of a conventional p-i-n configuration will not only increase the short-circuit current density (from 14.4 to 14.9 mA/cm 2 , according to our simulations), it also enhances the open-circuit voltage and the fill factor (from 917 mV to 1.0 V and from 74% to 83%, respectively). For this concept to work efficiently, a high work function front electrode material or a high interface charge is needed

  7. Passivated emitters in silicon solar cells

    International Nuclear Information System (INIS)

    King, R.R.; Gruenbaum, P.E.; Sinton, R.A.; Swanson, R.M.

    1990-01-01

    In high-efficiency silicon solar cells with low metal contact coverage fractions and high bulk lifetimes, cell performance is often dominated by recombination in the oxide-passivated diffusions on the cell surface. Measurements of the emitter saturation current density, J o , of oxide-passivated, boron and phosphorus diffusions are presented, and from these measurements, the dependence of surface recombination velocity on dopant concentration was extracted. The lowest observed values of J o which are stable under UV light are given for both boron- and phosphorus-doped, oxide-passivated diffusions, for both textured and untextured surfaces. Contour plots which incorporate the above data have been applied to two types of backside-contact solar cells with large area (37.5 cm 2 ) and one-sun efficiencies up to 22.7%

  8. Silicon nanowire-based solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Stelzner, Th; Pietsch, M; Andrae, G; Falk, F; Ose, E; Christiansen, S [Institute of Photonic Technology, Albert-Einstein-Strasse 9, D-07745 Jena (Germany)], E-mail: thomas.stelzner@ipht-jena.de

    2008-07-23

    The fabrication of silicon nanowire-based solar cells on silicon wafers and on multicrystalline silicon thin films on glass is described. The nanowires show a strong broadband optical absorption, which makes them an interesting candidate to serve as an absorber in solar cells. The operation of a solar cell is demonstrated with n-doped nanowires grown on a p-doped silicon wafer. From a partially illuminated area of 0.6 cm{sup 2} open-circuit voltages in the range of 230-280 mV and a short-circuit current density of 2 mA cm{sup -2} were obtained.

  9. Silicon nanowire-based solar cells

    International Nuclear Information System (INIS)

    Stelzner, Th; Pietsch, M; Andrae, G; Falk, F; Ose, E; Christiansen, S

    2008-01-01

    The fabrication of silicon nanowire-based solar cells on silicon wafers and on multicrystalline silicon thin films on glass is described. The nanowires show a strong broadband optical absorption, which makes them an interesting candidate to serve as an absorber in solar cells. The operation of a solar cell is demonstrated with n-doped nanowires grown on a p-doped silicon wafer. From a partially illuminated area of 0.6 cm 2 open-circuit voltages in the range of 230-280 mV and a short-circuit current density of 2 mA cm -2 were obtained

  10. Black silicon solar cells with black bus-bar strings

    DEFF Research Database (Denmark)

    Davidsen, Rasmus Schmidt; Tang, Peter Torben; Mizushima, Io

    2016-01-01

    We present the combination of black silicon texturing and blackened bus-bar strings as a potential method for obtaining all-black solar panels, while using conventional, front-contacted solar cells. Black silicon was realized by maskless reactive ion etching resulting in total, average reflectance...... below 0.5% across a 156x156 mm2 silicon wafer. Four different methods to obtain blackened bus-bar strings were compared with respect to reflectance, and two of these methods (i.e., oxidized copper and etched solder) were used to fabricate functional allblack solar 9-cell panels. The black bus-bars (e.......g., by oxidized copper) have a reflectance below 3% in the entire visible wavelength range. The combination of black silicon cells and blackened bus-bars results in aesthetic, all-black panels based on conventional, front-contacted solar cells without compromising efficiency....

  11. Silicon heterojunction solar cell passivation in combination with nanocrystalline silicon oxide emitters

    NARCIS (Netherlands)

    Gatz, H.A.; Rath, J.K.; Verheijen, M.A.; Kessels, W.M.M.; Schropp, R.E.I.

    2016-01-01

    Silicon heterojunction solar cells (SHJ) are well known for their high efficiencies, enabled by their remarkably high open-circuit voltages (VOC). A key factor in achieving these values is a good passivation of the crystalline wafer interface. One of the restrictions during SHJ solar cell production

  12. Technological development for super-high efficiency solar cells. Technological development of solar-high efficiency singlecrystalline silicon solar cells (high quality singlecrystalline silicon substrates); Chokokoritsu taiyo denchi no gijutsu kaihatsu. Chokokoritsu tankessho silicon taiyo denchi no gijutsu kaihatsu (kohinshitsu tankessho silicon kiban no gijutsu kaihatsu)

    Energy Technology Data Exchange (ETDEWEB)

    Tatsuta, M [New Energy and Industrial Technology Development Organization, Tokyo (Japan)

    1994-12-01

    This paper reports the study results on technological development for high quality efficiency singlecrystalline silicon substrates in fiscal 1994. (1) On electromagnetic casting/once FZ bath method, a Si single crystal of 600mm long was successfully obtained by improvement of power source frequency and furnace parts. High carbon content resulted in no single crystal including solids. In undoped electromagnetic casting ingots, resistivities over 1500ohm-cm were obtained because of effective preventive measures from contaminants. (2) On electromagnetic melting CZ method, since vibration and temperature control of melt surface by magnetic shield was insufficient for stable pulling of single crystals, its practical use was hopeless. (3) On electron beam melting CZ method, a Si single crystal of 25mm in diameter was obtained by preventive measures from evaporation of Si and influence of deposits, and improved uniform deposition distribution in a furnace. The oscillation circuit constant of power source, and water-cooling copper crucible structure were also analyzed for the optimum design of electromagnetic melting furnaces. 3 figs., 1 tab.

  13. Silicon solar cells: Past, present and the future

    Science.gov (United States)

    Lee, Youn-Jung; Kim, Byung-Sung; Ifitiquar, S. M.; Park, Cheolmin; Yi, Junsin

    2014-08-01

    There has been a great demand for renewable energy for the last few years. However, the solar cell industry is currently experiencing a temporary plateau due to a sluggish economy and an oversupply of low-quality cells. The current situation can be overcome by reducing the production cost and by improving the cell is conversion efficiency. New materials such as compound semiconductor thin films have been explored to reduce the fabrication cost, and structural changes have been explored to improve the cell's efficiency. Although a record efficiency of 24.7% is held by a PERL — structured silicon solar cell and 13.44% has been realized using a thin silicon film, the mass production of these cells is still too expensive. Crystalline and amorphous silicon — based solar cells have led the solar industry and have occupied more than half of the market so far. They will remain so in the future photovoltaic (PV) market by playing a pivotal role in the solar industry. In this paper, we discuss two primary approaches that may boost the silicon — based solar cell market; one is a high efficiency approach and the other is a low cost approach. We also discuss the future prospects of various solar cells.

  14. Silicon solar cells: past, present and the future

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Y. J.; Kim, B. S.; Ifitiquar, S. M.; Park, C. M.; Yi, J. S. [Sungkyunkwan University, Suwon (Korea, Republic of)

    2014-08-15

    There has been a great demand for renewable energy for the last few years. However, the solar cell industry is currently experiencing a temporary plateau due to a sluggish economy and an over supply of low-quality cells. The current situation can be overcome by reducing the production cost and by improving the cell is conversion efficiency. New materials such as compound semiconductor thin films have been explored to reduce the fabrication cost, and structural changes have been explored to improve the cell's efficiency. Although a record efficiency of 24.7% is held by a PERL - structured silicon solar cell and 13.44% has been realized using a thin silicon film, the mass production of these cells is still too expensive. Crystalline and amorphous silicon - based solar cells have led the solar industry and have occupied more than half of the market so far. They will remain so in the future photovoltaic (PV) market by playing a pivotal role in the solar industry. In this paper, we discuss two primary approaches that may boost the silicon - based solar cell market; one is a high efficiency approach and the other is a low cost approach. We also discuss the future prospects of various solar cells.

  15. Solar cells with gallium phosphide/silicon heterojunction

    Science.gov (United States)

    Darnon, Maxime; Varache, Renaud; Descazeaux, Médéric; Quinci, Thomas; Martin, Mickaël; Baron, Thierry; Muñoz, Delfina

    2015-09-01

    One of the limitations of current amorphous silicon/crystalline silicon heterojunction solar cells is electrical and optical losses in the front transparent conductive oxide and amorphous silicon layers that limit the short circuit current. We propose to grow a thin (5 to 20 nm) crystalline Gallium Phosphide (GaP) by epitaxy on silicon to form a more transparent and more conducting emitter in place of the front amorphous silicon layers. We show that a transparent conducting oxide (TCO) is still necessary to laterally collect the current with thin GaP emitter. Larger contact resistance of GaP/TCO increases the series resistance compared to amorphous silicon. With the current process, losses in the IR region associated with silicon degradation during the surface preparation preceding GaP deposition counterbalance the gain from the UV region. A first cell efficiency of 9% has been obtained on ˜5×5 cm2 polished samples.

  16. Key Success Factors and Future Perspective of Silicon-Based Solar Cells

    Directory of Open Access Journals (Sweden)

    S. Binetti

    2013-01-01

    Full Text Available Today, after more than 70 years of continued progress on silicon technology, about 85% of cumulative installed photovolatic (PV modules are based on crystalline silicon (c-Si. PV devices based on silicon are the most common solar cells currently being produced, and it is mainly due to silicon technology that the PV has grown by 40% per year over the last decade. An additional step in the silicon solar cell development is ongoing, and it is related to a further efficiency improvement through defect control, device optimization, surface modification, and nanotechnology approaches. This paper attempts to briefly review the most important advances and current technologies used to produce crystalline silicon solar devices and in the meantime the most challenging and promising strategies acting to increase the efficiency to cost/ratio of silicon solar cells. Eventually, the impact and the potentiality of using a nanotechnology approach in a silicon-based solar cell are also described.

  17. New, mechanically textured high-efficiency solar cells of low-cost silicon foil material. Final report; Neuartige, mechanisch texturierte Hochleistungssolarzellen aus kostenguenstigem Siliziumfolienmaterial. Abschlussbericht

    Energy Technology Data Exchange (ETDEWEB)

    Bucher, E.; Fath, P.; Boueke, A.; Gerhards, C.; Huster, F.; Kuehn, R.; Hahn, G.; Terheiden, B.

    2001-07-01

    The project investigated the efficiency increase of solar cells made of multicrystalline silicon. Since 1992, Constance University has been working on a texturing process based on fast rotating profile tools. The technology is a low-cost grinding technology and will enhance the efficiency of multicrystalline Si solar cell processes in industrial applications. Combined with innovative cell concepts (semi-transparent POWER solar cells, rolling pressure metallization, innovative cell connection), the process has considerable technology transfer and marketing potential. The project intended a systematic improvement of the results achieved so far on the basis of new ideas and full exploitation of the available technological potential in the field of wafer, foil and thin film processes. [German] Zu Beginn des Vorhabens zeichnete sich weltweit der Trend ab, zunehmend multikristallines Silizium, blockgegossenes sowie foliengezogenes, in der Photovoltaik einzusetzen. Daraus ergab sich die Fragestellung der Steigerung des Solarzellenwirkungswirkungsgrades insbesondere auf diesen Materialien. Zwei wesentliche Aspekte sind dabei zu beruecksichtigen: eine effiziente Oberflaechentextur und eine angepasste Prozessoptimierung inklusive Volumenpasssivierung. Bei dem an der Universitaet Konstanz seit 1992 in der Laborentwicklung befindlichen Texturierungsverfahren auf Basis schnellrotierenden Profilwerkzeuge handelte es sich um eine vielseitig verwendbare Technologie, die zum einen als reines mechanisches Schleifverfahren kostenguenstig erscheint und zum anderen zu Wirkungsgradsteigerungen bei industrienahen multikristallinen Silizium-Solarzellenprozessen fuehrt. In Verbindung mit innovativen Zellkonzepten (semitransparente POWER-Solarzellen, Rolldruckmetallisierung, innovative Zellverschaltung) verfuegt dieses Verfahren ueber ein erhebliches Technologietransfer- und Marktpotential. Das vorliegende Vorhaben verfolgte eine systematische Verbesserung der bereits erzielten Ergebnisse

  18. Sunlight-thin nanophotonic monocrystalline silicon solar cells

    Science.gov (United States)

    Depauw, Valérie; Trompoukis, Christos; Massiot, Inès; Chen, Wanghua; Dmitriev, Alexandre; Cabarrocas, Pere Roca i.; Gordon, Ivan; Poortmans, Jef

    2017-09-01

    Introducing nanophotonics into photovoltaics sets the path for scaling down the surface texture of crystalline-silicon solar cells from the micro- to the nanoscale, allowing to further boost the photon absorption while reducing silicon material loss. However, keeping excellent electrical performance has proven to be very challenging, as the absorber is damaged by the nanotexturing and the sensitivity to the surface recombination is dramatically increased. Here we realize a light-wavelength-scale nanotextured monocrystalline silicon cell with the confirmed efficiency of 8.6% and an effective thickness of only 830 nm. For this we adopt a self-assembled large-area and industry-compatible amorphous ordered nanopatterning, combined with an advanced surface passivation, earning strongly enhanced solar light absorption while retaining efficient electron collection. This prompts the development of highly efficient flexible and semitransparent photovoltaics, based on the industrially mature monocrystalline silicon technology.

  19. UV radiation hardness of silicon inversion layer solar cells

    International Nuclear Information System (INIS)

    Hezel, R.

    1990-01-01

    For full utilization of the high spectral response of inversion layer solar cells in the very-short-wavelength range of the solar spectrum sufficient ultraviolet-radiation hardness is required. In addition to the charge-induced passivation achieved by cesium incorporation into the silicon nitride AR coating, in this paper the following means for further drastic reduction of UV light-induced effects in inversion layer solar cells without encapsulation are introduced and interpretations are given: increasing the nitride deposition temperature, silicon surface oxidation at low temperatures, and texture etching and using higher substrate resistivities. High UV radiation tolerance and improvement of the cell efficiency could be obtained simultaneously

  20. Silicon Solar Cell Process Development, Fabrication and Analysis, Phase 1

    Science.gov (United States)

    Yoo, H. I.; Iles, P. A.; Tanner, D. P.

    1979-01-01

    Solar cells from RTR ribbons, EFG (RF and RH) ribbons, dendritic webs, Silso wafers, cast silicon by HEM, silicon on ceramic, and continuous Czochralski ingots were fabricated using a standard process typical of those used currently in the silicon solar cell industry. Back surface field (BSF) processing and other process modifications were included to give preliminary indications of possible improved performance. The parameters measured included open circuit voltage, short circuit current, curve fill factor, and conversion efficiency (all taken under AM0 illumination). Also measured for typical cells were spectral response, dark I-V characteristics, minority carrier diffusion length, and photoresponse by fine light spot scanning. the results were compared to the properties of cells made from conventional single crystalline Czochralski silicon with an emphasis on statistical evaluation. Limited efforts were made to identify growth defects which will influence solar cell performance.

  1. Light-Induced Degradation of Thin Film Silicon Solar Cells

    International Nuclear Information System (INIS)

    Hamelmann, F U; Weicht, J A; Behrens, G

    2016-01-01

    Silicon-wafer based solar cells are still domination the market for photovoltaic energy conversion. However, most of the silicon is used only for mechanical stability, while only a small percentage of the material is needed for the light absorption. Thin film silicon technology reduces the material demand to just some hundred nanometer thickness. But even in a tandem stack (amorphous and microcrystalline silicon) the efficiencies are lower, and light-induced degradation is an important issue. The established standard tests for characterisation are not precise enough to predict the performance of thin film silicon solar cells under real conditions, since many factors do have an influence on the degradation. We will show some results of laboratory and outdoor measurements that we are going to use as a base for advanced modelling and simulation methods. (paper)

  2. High performance hybrid silicon micropillar solar cell based on light trapping characteristics of Cu nanoparticles

    Directory of Open Access Journals (Sweden)

    Yulong Zhang

    2018-05-01

    Full Text Available High performance silicon combined structure (micropillar with Cu nanoparticles solar cell has been synthesized from N-type silicon substrates based on the micropillar array. The combined structure solar cell exhibited higher short circuit current rather than the silicon miropillar solar cell, which the parameters of micropillar array are the same. Due to the Cu nanoparticles were decorated on the surface of silicon micropillar array, the photovoltaic properties of cells have been improved. In addition, the optimal efficiency of 11.5% was measured for the combined structure solar cell, which is better than the silicon micropillar cell.

  3. High performance hybrid silicon micropillar solar cell based on light trapping characteristics of Cu nanoparticles

    Science.gov (United States)

    Zhang, Yulong; Fan, Zhiqiang; Zhang, Weijia; Ma, Qiang; Jiang, Zhaoyi; Ma, Denghao

    2018-05-01

    High performance silicon combined structure (micropillar with Cu nanoparticles) solar cell has been synthesized from N-type silicon substrates based on the micropillar array. The combined structure solar cell exhibited higher short circuit current rather than the silicon miropillar solar cell, which the parameters of micropillar array are the same. Due to the Cu nanoparticles were decorated on the surface of silicon micropillar array, the photovoltaic properties of cells have been improved. In addition, the optimal efficiency of 11.5% was measured for the combined structure solar cell, which is better than the silicon micropillar cell.

  4. Transmutation doping of silicon solar cells

    Science.gov (United States)

    Wood, R. F.; Westbrook, R. D.; Young, R. T.; Cleland, J. W.

    1977-01-01

    Normal isotopic silicon contains 3.05% of Si-30 which transmutes to P-31 after thermal neutron absorption, with a half-life of 2.6 hours. This reaction is used to introduce extremely uniform concentrations of phosphorus into silicon, thus eliminating the areal and spatial inhomogeneities characteristic of chemical doping. Annealing of the lattice damage in the irradiated silicon does not alter the uniformity of dopant distribution. Transmutation doping also makes it possible to introduce phosphorus into polycrystalline silicon without segregation of the dopant at the grain boundaries. The use of neutron transmutation doped (NTD) silicon in solar cell research and development is discussed.

  5. On the use of a charged tunnel layer as a hole collector to improve the efficiency of amorphous silicon thin-film solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Ke, Cangming; Sahraei, Nasim; Aberle, Armin G. [Solar Energy Research Institute of Singapore, National University of Singapore, Singapore 117574 (Singapore); Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117583 (Singapore); Stangl, Rolf [Solar Energy Research Institute of Singapore, National University of Singapore, Singapore 117574 (Singapore); Peters, Ian Marius

    2015-06-28

    A new concept, using a negatively charged tunnel layer as a hole collector, is proposed and theoretically investigated for application in amorphous silicon thin-film solar cells. The concept features a glass/transparent conductive oxide/ultra-thin negatively charged tunnel layer/intrinsic a-Si:H/n-doped a-Si:H/metal structure. The key feature of this so called t{sup +}-i-n structure is the introduction of a negatively charged tunnel layer (attracting holes from the intrinsic absorber layer), which substitutes the highly recombination active p-doped a-Si:H layer in a conventional p-i-n configuration. Atomic layer deposited aluminum oxide (ALD AlO{sub x}) is suggested as a potential candidate for such a tunnel layer. Using typical ALD AlO{sub x} parameters, a 27% relative efficiency increase (i.e., from 9.7% to 12.3%) is predicted theoretically for a single-junction a-Si:H solar cell on a textured superstrate. This prediction is based on parameters that reproduce the experimentally obtained external quantum efficiency and current-voltage characteristics of a conventional processed p-i-n a-Si:H solar cell, reaching 9.7% efficiency and serving as a reference. Subsequently, the p-doped a-Si:H layer is replaced by the tunnel layer (studied by means of numerical device simulation). Using a t{sup +}-i-n configuration instead of a conventional p-i-n configuration will not only increase the short-circuit current density (from 14.4 to 14.9 mA/cm{sup 2}, according to our simulations), it also enhances the open-circuit voltage and the fill factor (from 917 mV to 1.0 V and from 74% to 83%, respectively). For this concept to work efficiently, a high work function front electrode material or a high interface charge is needed.

  6. Fabricating solar cells with silicon nanoparticles

    Science.gov (United States)

    Loscutoff, Paul; Molesa, Steve; Kim, Taeseok

    2014-09-02

    A laser contact process is employed to form contact holes to emitters of a solar cell. Doped silicon nanoparticles are formed over a substrate of the solar cell. The surface of individual or clusters of silicon nanoparticles is coated with a nanoparticle passivation film. Contact holes to emitters of the solar cell are formed by impinging a laser beam on the passivated silicon nanoparticles. For example, the laser contact process may be a laser ablation process. In that case, the emitters may be formed by diffusing dopants from the silicon nanoparticles prior to forming the contact holes to the emitters. As another example, the laser contact process may be a laser melting process whereby portions of the silicon nanoparticles are melted to form the emitters and contact holes to the emitters.

  7. TCAD analysis of graphene silicon Schottky junction solar cell

    Science.gov (United States)

    Kuang, Yawei; Liu, Yushen; Ma, Yulong; Xu, Jing; Yang, Xifeng; Feng, Jinfu

    2015-08-01

    The performance of graphene based Schottky junction solar cell on silicon substrate is studied theoretically by TCAD Silvaco tools. We calculate the current-voltage curves and internal quantum efficiency of this device at different conditions using tow dimensional model. The results show that the power conversion efficiency of Schottky solar cell dependents on the work function of graphene and the physical properties of silicon such as thickness and doping concentration. At higher concentration of 1e17cm-3 for n-type silicon, the dark current got a sharp rise compared with lower doping concentration which implies a convert of electron emission mechanism. The biggest fill factor got at higher phos doping predicts a new direction for higher performance graphene Schottky solar cell design.

  8. Highly efficient silicon light emitting diode

    NARCIS (Netherlands)

    Le Minh, P.; Holleman, J.; Wallinga, Hans

    2002-01-01

    In this paper, we describe the fabrication, using standard silicon processing techniques, of silicon light-emitting diodes (LED) that efficiently emit photons with energy around the silicon bandgap. The improved efficiency had been explained by the spatial confinement of charge carriers due to a

  9. Chromium Trioxide Hole-Selective Heterocontacts for Silicon Solar Cells.

    Science.gov (United States)

    Lin, Wenjie; Wu, Weiliang; Liu, Zongtao; Qiu, Kaifu; Cai, Lun; Yao, Zhirong; Ai, Bin; Liang, Zongcun; Shen, Hui

    2018-04-25

    A high recombination rate and high thermal budget for aluminum (Al) back surface field are found in the industrial p-type silicon solar cells. Direct metallization on lightly doped p-type silicon, however, exhibits a large Schottky barrier for the holes on the silicon surface because of Fermi-level pinning effect. As a result, low-temperature-deposited, dopant-free chromium trioxide (CrO x , x solar cell as a hole-selective contact at the rear surface. By using 4 nm CrO x between the p-type silicon and Ag, we achieve a reduction of the contact resistivity for the contact of Ag directly on p-type silicon. For further improvement, we utilize a CrO x (2 nm)/Ag (30 nm)/CrO x (2 nm) multilayer film on the contact between Ag and p-type crystalline silicon (c-Si) to achieve a lower contact resistance (40 mΩ·cm 2 ). The low-resistivity Ohmic contact is attributed to the high work function of the uniform CrO x film and the depinning of the Fermi level of the SiO x layer at the silicon interface. Implementing the advanced hole-selective contacts with CrO x /Ag/CrO x on the p-type silicon solar cell results in a power conversion efficiency of 20.3%, which is 0.1% higher than that of the cell utilizing 4 nm CrO x . Compared with the commercialized p-type solar cell, the novel CrO x -based hole-selective transport material opens up a new possibility for c-Si solar cells using high-efficiency, low-temperature, and dopant-free deposition techniques.

  10. Surface etching technologies for monocrystalline silicon wafer solar cells

    Science.gov (United States)

    Tang, Muzhi

    With more than 200 GW of accumulated installations in 2015, photovoltaics (PV) has become an important green energy harvesting method. The PV market is dominated by solar cells made from crystalline silicon wafers. The engineering of the wafer surfaces is critical to the solar cell cost reduction and performance enhancement. Therefore, this thesis focuses on the development of surface etching technologies for monocrystalline silicon wafer solar cells. It aims to develop a more efficient alkaline texturing method and more effective surface cleaning processes. Firstly, a rapid, isopropanol alcohol free texturing method is successfully demonstrated to shorten the process time and reduce the consumption of chemicals. This method utilizes the special chemical properties of triethylamine, which can form Si-N bonds with wafer surface atoms. Secondly, a room-temperature anisotropic emitter etch-back process is developed to improve the n+ emitter passivation. Using this method, 19.0% efficient screen-printed aluminium back surface field solar cells are developed that show an efficiency gain of 0.15% (absolute) compared with conventionally made solar cells. Finally, state-of-the-art silicon surface passivation results are achieved using hydrogen plasma etching as a dry alternative to the classical hydrofluoric acid wet-chemical process. The effective native oxide removal and the hydrogenation of the silicon surface are shown to be the reasons for the excellent level of surface passivation achieved with this novel method.

  11. High-Efficiency Amorphous Silicon and Nanocrystalline Silicon-Based Solar Cells and Modules: Final Technical Progress Report, 30 January 2006 - 29 January 2008

    Energy Technology Data Exchange (ETDEWEB)

    Guha, S.; Yang, J.

    2008-05-01

    United Solar Ovonic successfully used its spectrum-splitting a-Si:H/a-SiGe:H/a-SiGe:H triple-junction structure in their manufacturing plants, achieving a manufacturing capacity of 118 MW in 2007, and set up a very aggressive expansion plan to achieve grid parity.

  12. Design and Photovoltaic Properties of Graphene/Silicon Solar Cell

    Science.gov (United States)

    Xu, Dikai; Yu, Xuegong; Yang, Lifei; Yang, Deren

    2018-04-01

    Graphene/silicon (Gr/Si) Schottky junction solar cells have attracted widespread attention for the fabrication of high-efficiency and low-cost solar cells. However, their performance is still limited by the working principles of Schottky junctions. Modulating the working mechanism of the solar cells into a quasi p-n junction has advantages, including higher open-circuit voltage (V OC) and less carrier recombination. In this study, Gr/Si quasi p-n junction solar cells were formed by inserting a tunneling Al2O3 interlayer in-between graphene and silicon, which led to obtain the PCE up to 8.48% without antireflection or chemical doping techniques. Our findings could pave a new way for the development of Gr/Si solar cells.

  13. Normal incidence spectrophotometer using high density transmission grating technology and highly efficiency silicon photodiodes for absolute solar EUV irradiance measurements

    Science.gov (United States)

    Ogawa, H. S.; Mcmullin, D.; Judge, D. L.; Korde, R.

    1992-01-01

    New developments in transmission grating and photodiode technology now make it possible to realize spectrometers in the extreme ultraviolet (EUV) spectral region (wavelengths less than 1000 A) which are expected to be virtually constant in their diffraction and detector properties. Time dependent effects associated with reflection gratings are eliminated through the use of free standing transmission gratings. These gratings together with recently developed and highly stable EUV photodiodes have been utilized to construct a highly stable normal incidence spectrophotometer to monitor the variability and absolute intensity of the solar 304 A line. Owing to its low weight and compactness, such a spectrometer will be a valuable tool for providing absolute solar irradiance throughout the EUV. This novel instrument will also be useful for cross-calibrating other EUV flight instruments and will be flown on a series of Hitchhiker Shuttle Flights and on SOHO. A preliminary version of this instrument has been fabricated and characterized, and the results are described.

  14. Industrial inline PVD metallization for silicon solar cells with laser fired contacts leading to 21.8% efficiency

    OpenAIRE

    Nekarda, J.; Reinwand, D.; Hartmann, P.; Preu, R.

    2010-01-01

    In this contribution we present the latest results of our experiments in regard to an industrially feasible inline physical vapor deposition (PVD) metallization method for the rear side of passivated solar cells. In an earlier publication, the quality of such processed layers and the feasibility of the tool was already shown and compared with a commonly used laboratory process based on electron beam evaporation. Since then a difference in the Voc potential in the range of ~ 4 mV between both ...

  15. Solar cell fabricated on welded thin flexible silicon

    Directory of Open Access Journals (Sweden)

    Hessmann Maik Thomas

    2015-01-01

    Full Text Available We present a thin-film crystalline silicon solar cell with an AM1.5 efficiency of 11.5% fabricated on welded 50 μm thin silicon foils. The aperture area of the cell is 1.00 cm2. The cell has an open-circuit voltage of 570 mV, a short-circuit current density of 29.9 mA cm-2 and a fill factor of 67.6%. These are the first results ever presented for solar cells on welded silicon foils. The foils were welded together in order to create the first thin flexible monocrystalline band substrate. A flexible band substrate offers the possibility to overcome the area restriction of ingot-based monocrystalline silicon wafers and the feasibility of a roll-to-roll manufacturing. In combination with an epitaxial and layer transfer process a decrease in production costs can be achieved.

  16. Spectral response of a polycrystalline silicon solar cell

    International Nuclear Information System (INIS)

    Ba, B.; Kane, M.

    1994-10-01

    A theoretical study of the spectral response of a polycrystalline silicon n-p junction solar cell is presented. The case of a fibrously oriented grain structure, involving grain boundary recombination velocity and grain size effects is discussed. The contribution of the base region on the internal quantum efficiency Q int is computed for different grain sizes and grain boundary recombination velocities in order to examine their influence. Suggestions are also made for the determination of base diffusion length in polycrystalline silicon solar cells using the spectral response method. (author). 15 refs, 4 figs

  17. Low cost thin film poly-silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    2005-07-01

    This report presents the results of a project to design and develop a high density plasma based thin-film poly-silicon (TFPS) deposition system based on PQL proprietary advanced plasma technology to produce semiconductor quality TFPS for fabricating a TFPS solar cell. Details are given of the TFPS deposition system, the material development programme, solar cell structure, and cell efficiencies. The reproducibility of the deposition process and prospects for commercial exploitation are discussed.

  18. Solar energy innovation and Silicon Valley

    Science.gov (United States)

    Kammen, Daniel M.

    2015-03-01

    The growth of the U. S. and global solar energy industry depends on a strong relationship between science and engineering innovation, manufacturing, and cycles of policy design and advancement. The mixture of the academic and industrial engine of innovation that is Silicon Valley, and the strong suite of environmental policies for which California is a leader work together to both drive the solar energy industry, and keep Silicon Valley competitive as China, Europe and other area of solar energy strength continue to build their clean energy sectors.

  19. The performance of silicon solar cells operated in liquids

    International Nuclear Information System (INIS)

    Wang Yiping; Fang Zhenlei; Zhu Li; Huang Qunwu; Zhang Yan; Zhang Zhiying

    2009-01-01

    Better performance can be achieved when the bare silicon solar cells are immersed into liquids for the enhanced heat removing. In this study, the performance of solar cells immersed in liquids was examined under simulated sunlight. To distinguish the effects of the liquid optic and electric properties on the solar cells, a comparison between immersion of the solar module and the bare solar cells was carried out. It was found that the optic properties of the liquids can cause minor efficiency changes on the solar cells, while the electric properties of the liquids, the molecular polarizable and ions, are responsible for the most of the changes. The bare solar cells immersed in the non-polar silicon oil have the best performance. The accelerated life tests were carried out at 150 deg. C high temperature and under 200 W/m 2 ultraviolet light irradiation, respectively. It was found that the silicon oil has good stability. This study can give support on the cooling of the concentrated photovoltaic systems by immersing the solar cells in the liquids directly

  20. Field Performance versus Standard Test Condition Efficiency of Tandem Solar Cells and the Specific Case of Perovskites/Silicon Devices

    KAUST Repository

    Dupre, Olivier; Niesen, Bjö rn; De Wolf, Stefaan; Ballif, Christophe

    2018-01-01

    efficiencies and calculate their energy yields using field data from Denver. We find that annual losses due to differences between operating conditions and standard test conditions are similar for single-junction and four-terminal tandem devices. The additional

  1. Silicon Web Process Development. [for solar cell fabrication

    Science.gov (United States)

    Duncan, C. S.; Seidensticker, R. G.; Hopkins, R. H.; Mchugh, J. P.; Hill, F. E.; Heimlich, M. E.; Driggers, J. M.

    1979-01-01

    Silicon dendritic web, ribbon form of silicon and capable of fabrication into solar cells with greater than 15% AMl conversion efficiency, was produced from the melt without die shaping. Improvements were made both in the width of the web ribbons grown and in the techniques to replenish the liquid silicon as it is transformed to web. Through means of improved thermal shielding stress was reduced sufficiently so that web crystals nearly 4.5 cm wide were grown. The development of two subsystems, a silicon feeder and a melt level sensor, necessary to achieve an operational melt replenishment system, is described. A gas flow management technique is discussed and a laser reflection method to sense and control the melt level as silicon is replenished is examined.

  2. Optical modelling of thin-film silicon solar cells deposited on textured substrates

    International Nuclear Information System (INIS)

    Krc, J.; Zeman, M.; Smole, F.; Topic, M.

    2004-01-01

    Optical modelling is used to investigate effects of light scattering in amorphous silicon and microcrystalline silicon solar cells. The role of enhanced haze parameter and different angular distribution function of scattered light is analyzed. Results of optical simulation show that enhanced haze parameter compared to that of Asahi U-type SnO 2 :F does not improve external quantum efficiency and short-circuit current density of amorphous silicon solar cell significantly, whereas for microcrystalline silicon solar cell the improvement is larger. Angular distribution function affects the external quantum efficiency and the short-circuit current density significantly

  3. Silicon-Rich Silicon Carbide Hole-Selective Rear Contacts for Crystalline-Silicon-Based Solar Cells.

    Science.gov (United States)

    Nogay, Gizem; Stuckelberger, Josua; Wyss, Philippe; Jeangros, Quentin; Allebé, Christophe; Niquille, Xavier; Debrot, Fabien; Despeisse, Matthieu; Haug, Franz-Josef; Löper, Philipp; Ballif, Christophe

    2016-12-28

    The use of passivating contacts compatible with typical homojunction thermal processes is one of the most promising approaches to realizing high-efficiency silicon solar cells. In this work, we investigate an alternative rear-passivating contact targeting facile implementation to industrial p-type solar cells. The contact structure consists of a chemically grown thin silicon oxide layer, which is capped with a boron-doped silicon-rich silicon carbide [SiC x (p)] layer and then annealed at 800-900 °C. Transmission electron microscopy reveals that the thin chemical oxide layer disappears upon thermal annealing up to 900 °C, leading to degraded surface passivation. We interpret this in terms of a chemical reaction between carbon atoms in the SiC x (p) layer and the adjacent chemical oxide layer. To prevent this reaction, an intrinsic silicon interlayer was introduced between the chemical oxide and the SiC x (p) layer. We show that this intrinsic silicon interlayer is beneficial for surface passivation. Optimized passivation is obtained with a 10-nm-thick intrinsic silicon interlayer, yielding an emitter saturation current density of 17 fA cm -2 on p-type wafers, which translates into an implied open-circuit voltage of 708 mV. The potential of the developed contact at the rear side is further investigated by realizing a proof-of-concept hybrid solar cell, featuring a heterojunction front-side contact made of intrinsic amorphous silicon and phosphorus-doped amorphous silicon. Even though the presented cells are limited by front-side reflection and front-side parasitic absorption, the obtained cell with a V oc of 694.7 mV, a FF of 79.1%, and an efficiency of 20.44% demonstrates the potential of the p + /p-wafer full-side-passivated rear-side scheme shown here.

  4. Molecular monolayers for electrical passivation and functionalization of silicon-based solar energy devices

    NARCIS (Netherlands)

    Veerbeek, Janneke; Firet, Nienke J.; Vijselaar, Wouter; Elbersen, R.; Gardeniers, Han; Huskens, Jurriaan

    2017-01-01

    Silicon-based solar fuel devices require passivation for optimal performance yet at the same time need functionalization with (photo)catalysts for efficient solar fuel production. Here, we use molecular monolayers to enable electrical passivation and simultaneous functionalization of silicon-based

  5. Converting sunlight into red light in fluorosilicate glass for amorphous silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Ming, Chengguo, E-mail: mingchengguo1978@163.com [Physics Department, School of Sciences, Tianjin University of Science & Technology, Tianjin 300457 (China); Song, Feng [Photonics Center, College of Physical Science, Nankai University, Tianjin 300071 (China); Ren, Xiaobin [Physics Department, School of Sciences, Tianjin University of Science & Technology, Tianjin 300457 (China); Yuan, Fengying; Qin, Yueting [Physics Department, School of Sciences, Tianjin University of Science & Technology, Tianjin 300457 (China); Photonics Center, College of Physical Science, Nankai University, Tianjin 300071 (China); An, Liqun; Cai, Yuanxue [Physics Department, School of Sciences, Tianjin University of Science & Technology, Tianjin 300457 (China)

    2017-03-15

    Fluorosilicate glass was prepared by high-temperature melting method to explore highly efficient luminescence materials for amorphous silicon solar cells. Absorption, excitation and emission spectra of the glass were measured. The optical characters of the glass were discussed in details. The glass can efficiently convert sunlight into red light. Our glass can be applied to amorphous silicon solar cells as a converter of solar spectrum.

  6. Inverted amorphous silicon solar cell utilizing cermet layers

    Science.gov (United States)

    Hanak, Joseph J.

    1979-01-01

    An amorphous silicon solar cell incorporating a transparent high work function metal cermet incident to solar radiation and a thick film cermet contacting the amorphous silicon opposite to said incident surface.

  7. World's Most Efficient Solar Cell

    Science.gov (United States)

    World's Most Efficient Solar Cell National Renewable Energy Laboratory, Spectrolab Set Record For , 1999 - A solar cell that can convert sunlight to electricity at a record-setting 32 percent efficiency on Earth. Spectrolab of Sylmar, Calif., "grew" the record-setting solar cell. After

  8. Back-contacted back-junction silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Mangersnes, Krister

    2010-10-15

    Conventional silicon solar cells have a front-side contacted emitter. Back-contacted back-junction (BC-BJ) silicon solar cells, on the other hand, have both the complete metallization and the active diffused regions of both polarities on the backside. World-record efficiencies have already been demonstrated for this type of cell design in production, both on cell and module level. However, the production of these cells is both complex and costly, and a further cost reduction in fabrication is needed to make electricity from BC-BJ silicon solar cells cost-competitive with electricity on the grid ('grid-parity'). During the work with this thesis, we have investigated several important issues regarding BC-BJ silicon solar cells. The aim has been to reduce production cost and complexity while at the same time maintaining, or increasing, the already high conversion efficiencies demonstrated elsewhere. This has been pursued through experimental work as well as through numerical simulations and modeling. Six papers are appended to this thesis, two of which are still under review in scientific journals. In addition, two patents have been filed based on the work presented herein. Experimentally, we have focused on investigating and optimizing single, central processing steps. A laser has been the key processing tool during most of the work. We have used the same laser both to structure the backside of the cell and to make holes in a double-layer of passivating amorphous silicon and silicon oxide, where the holes were opened with the aim of making local contact to the underlying silicon. The processes developed have the possibility of using a relatively cheap and industrially proven laser and obtain results better than most state-of-the-art laser technologies. During the work with the laser, we also developed a thermodynamic model that was able to predict the outcome from laser interaction with amorphous and crystalline silicon. Alongside the experimental work, we

  9. Hydrogen passivation of multi-crystalline silicon solar cells

    Institute of Scientific and Technical Information of China (English)

    胡志华; 廖显伯; 刘祖明; 夏朝凤; 陈庭金

    2003-01-01

    The effects of hydrogen passivation on multi-crystalline silicon (mc-Si) solar cells are reported in this paper.Hydrogen plasma was generated by means of ac glow discharge in a hydrogen atmosphere. Hydrogen passivation was carried out with three different groups of mc-Si solar cells after finishing contacts. The experimental results demonstrated that the photovoltaic performances of the solar cell samples have been improved after hydrogen plasma treatment, with a relative increase in conversion efficiency up to 10.6%. A calculation modelling has been performed to interpret the experimental results using the model for analysis of microelectronic and photonic structures developed at Pennsylvania State University.

  10. Analysis of IV characteristics of solar cells made of hydrogenated amorphous, polymorphous and microcrystalline silicon

    International Nuclear Information System (INIS)

    Hamadeh, H.

    2009-03-01

    The IV characteristics of pin solar cells made of amorphous, polymorphous and microcrystalline silicon were investigated. The temperature dependence was measured in the temperature range between 150 K and 395 K. This range covers the most terrestrial applications condition. Using simplex procedure, the IV parameter of the cells were deduce using line fitting. It has been shown that polymorphous silicon shows electrical properties that are close to properties of microcrystalline silicon but as it is well known, polymorphous silicon shows higher absorption similar to amorphous silicon. The polymorphous silicon solar cells showed higher efficiencies, lower shunting and higher filling factors. In the above mentioned temperature range, polymorphous silicon is the better material for the manufacturing of thin film hydrogenated silicon pin solar cells. More investigations concerning the structural properties are necessary to make stronger conclusions in regards to the stability of the material, what we hope to do in the future. (author)

  11. Light-induced performance increase of silicon heterojunction solar cells

    KAUST Repository

    Kobayashi, Eiji; De Wolf, Stefaan; Levrat, Jacques; Christmann, Gabriel; Descoeudres, Antoine; Nicolay, Sylvain; Despeisse, Matthieu; Watabe, Yoshimi; Ballif, Christophe

    2016-01-01

    Silicon heterojunction solar cells consist of crystalline silicon (c-Si) wafers coated with doped/intrinsic hydrogenated amorphous silicon (a-Si:H) bilayers for passivating-contact formation. Here, we unambiguously demonstrate that carrier injection either due to light soaking or (dark) forward-voltage bias increases the open circuit voltage and fill factor of finished cells, leading to a conversion efficiency gain of up to 0.3% absolute. This phenomenon contrasts markedly with the light-induced degradation known for thin-film a-Si:H solar cells. We associate our performance gain with an increase in surface passivation, which we find is specific to doped a-Si:H/c-Si structures. Our experiments suggest that this improvement originates from a reduced density of recombination-active interface states. To understand the time dependence of the observed phenomena, a kinetic model is presented.

  12. Light-induced performance increase of silicon heterojunction solar cells

    KAUST Repository

    Kobayashi, Eiji

    2016-10-11

    Silicon heterojunction solar cells consist of crystalline silicon (c-Si) wafers coated with doped/intrinsic hydrogenated amorphous silicon (a-Si:H) bilayers for passivating-contact formation. Here, we unambiguously demonstrate that carrier injection either due to light soaking or (dark) forward-voltage bias increases the open circuit voltage and fill factor of finished cells, leading to a conversion efficiency gain of up to 0.3% absolute. This phenomenon contrasts markedly with the light-induced degradation known for thin-film a-Si:H solar cells. We associate our performance gain with an increase in surface passivation, which we find is specific to doped a-Si:H/c-Si structures. Our experiments suggest that this improvement originates from a reduced density of recombination-active interface states. To understand the time dependence of the observed phenomena, a kinetic model is presented.

  13. Analysis and evaluation for practical application of photovoltaic power generation system. Analysis and evaluation for development of extra-high efficiency solar cells (fundamental research on extra-high efficiency Si solar cells); Taiyoko hatsuden system jitsuyoka no tame no kaiseki hyoka. Chokokoritsu taiyo denchi no gijutsu kaihatsu no tame no kaiseki hyoka (chokokoritsu silicon taiyo denchi gijutsu kaihatsu)

    Energy Technology Data Exchange (ETDEWEB)

    Sekikawa, T; Suzuki, E; Ishikawa, K; Takato, H; Yui, N; Shimokawa, R [Electrotechnical Laboratory, Tsukuba (Japan)

    1994-12-01

    Described herein are the results of the FY1994 research program for analysis and evaluation for development of extra-high efficiency silicon solar cells. It is necessary for development of extra-high efficiency Si solar cells to extend as far as possible service life of minority carriers and to develop the evaluation techniques. Noting photoluminescence (PL) observable even with Si, the method of evaluating characteristics of minority carriers, which are not limited in samples, is developed to experimentally determine their service life from transitional response of the PL characteristics. Si has an extremely low quantum effect, because it is an indirect transitional semiconductor, and needs measurement of very high sensitivity. A rapid heat annealing apparatus and others to generate carriers in the infrared and ultraviolet regions are provided in consideration that these are possible means to increase efficiency. These possibilities will be pursued by developing the annealing techniques. 1 fig.

  14. Improvement in the efficiency of amorphous silicon solar cells utilizing the optical confinement effect by means of a TiO2/Ag/SUS back-surface reflector

    Energy Technology Data Exchange (ETDEWEB)

    Okamoto, H; Hamakawa, Y

    1984-05-01

    A trial to improve the conversion efficiency of amorphous silicon (a-Si) solar cells was carried out utilizing the optical confinement effect for low energy photons near the optical band edge. For this purpose a TiO2/Ag/SUS (where SUS represents high grade mirror etched stainless steel) highly reflective semitextured substrate acting as a light scatterer was developed. Inverted-type a-Si solar cells fabricated on this substrate exhibit a remarkable increase in the carrier collection efficiency in the spectral region just above the optical energy gap of a-Si. The increase in J(sc) was about 20 percent compared with that of a cell on a conventional SUS substrate. Using this substrate, a conversion efficiency of more than 9 percent was attained. 16 references.

  15. Film adhesion in amorphous silicon solar cells

    Indian Academy of Sciences (India)

    TECS

    Film adhesion in amorphous silicon solar cells. A R M YUSOFF*, M N SYAHRUL and K HENKEL. Malaysia Energy Centre, 8th Floor, North Wing, Sapura @ Mines, 7, Jalan Tasik, The Mines Resort City,. 43300 Seri Kembangan, Selangor Darul Ehsan. MS received 11 April 2007. Abstract. A major issue encountered ...

  16. Combination of silicon nitride and porous silicon induced optoelectronic features enhancement of multicrystalline silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Rabha, Mohamed Ben; Dimassi, Wissem; Gaidi, Mounir; Ezzaouia, Hatem; Bessais, Brahim [Laboratoire de Photovoltaique, Centre de Recherches et des Technologies de l' Energie, Technopole de Borj-Cedria, BP 95, 2050 Hammam-Lif (Tunisia)

    2011-06-15

    The effects of antireflection (ARC) and surface passivation films on optoelectronic features of multicrystalline silicon (mc-Si) were investigated in order to perform high efficiency solar cells. A double layer consisting of Plasma Enhanced Chemical Vapor Deposition (PECVD) of silicon nitride (SiN{sub x}) on porous silicon (PS) was achieved on mc-Si surfaces. It was found that this treatment decreases the total surface reflectivity from about 25% to around 6% in the 450-1100 nm wavelength range. As a result, the effective minority carrier diffusion length, estimated from the Laser-beam-induced current (LBIC) method, was found to increase from 312 {mu}m for PS-treated cells to about 798 {mu}m for SiN{sub x}/PS-treated ones. The deposition of SiN{sub x} was found to impressively enhance the minority carrier diffusion length probably due to hydrogen passivation of surface, grain boundaries and bulk defects. Fourier Transform Infrared Spectroscopy (FTIR) shows that the vibration modes of the highly suitable passivating Si-H bonds exhibit frequency shifts toward higher wavenumber, depending on the x ratio of the introduced N atoms neighbors. (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  17. Fabrication of silicon solar cell with >18% efficiency using spin-on-film processing for phosphorus diffusion and SiO{sub 2}/graded index TiO{sub 2} anti-reflective coating

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Yi-Yu; Ho, Wen-Jeng, E-mail: wjho@ntut.edu.tw; Yeh, Chien-Wu

    2015-11-01

    Highlights: • Employed SOF technology for both phosphorus diffusion and multi-layer ARCs. • Optical properties of TiO{sub 2}, SiO{sub 2}, and SiO{sub 2}/TiO{sub 2}/TiO{sub 2} films are characterized. • Photovoltaic performances of the fabricated solar cells are measured and compared. • An impressive efficiency of 18.25% was obtained by using the SOF processes. - Abstract: This study employed spin-on film (SOF) technology for the fabrication of phosphorus diffusion and multi-layer anti-reflective coatings (ARCs) with a graded index on silicon (Si) wafers. Low cost and high efficiency solar cells are important issues for the operating cost of a photovoltaic system. SOF technology for the fabrication of solar cells can be for the achievement of this goal. This study succeeded in the application of SOF technology in the preparation of both phosphorus diffusion and SiO{sub 2}/graded index TiO{sub 2} ARCs for Si solar cells. Optical properties of TiO{sub 2}, SiO{sub 2}, and multi-layer SiO{sub 2}/TiO{sub 2} deposition by SOF are characterized. Electrical and optical characteristics of the fabricated solar cells are measured and compared. An impressive efficiency of 18.25% was obtained by using the SOF processes.

  18. Silicon web process development. [for low cost solar cells

    Science.gov (United States)

    Duncan, C. S.; Hopkins, R. H.; Seidensticker, R. G.; Mchugh, J. P.; Hill, F. E.; Heimlich, M. E.; Driggers, J. M.

    1979-01-01

    Silicon dendritic web, a single crystal ribbon shaped during growth by crystallographic forces and surface tension (rather than dies), is a highly promising base material for efficient low cost solar cells. The form of the product smooth, flexible strips 100 to 200 microns thick, conserves expensive silicon and facilitates automation of crystal growth and the subsequent manufacturing of solar cells. These characteristics, coupled with the highest demonstrated ribbon solar cell efficiency-15.5%-make silicon web a leading candidate to achieve, or better, the 1986 Low Cost Solar Array (LSA) Project cost objective of 50 cents per peak watt of photovoltaic output power. The main objective of the Web Program, technology development to significantly increase web output rate, and to show the feasibility for simultaneous melt replenishment and growth, have largely been accomplished. Recently, web output rates of 23.6 sq cm/min, nearly three times the 8 sq cm/min maximum rate of a year ago, were achieved. Webs 4 cm wide or greater were grown on a number of occassions.

  19. Molecular Monolayers for Electrical Passivation and Functionalization of Silicon-Based Solar Energy Devices.

    Science.gov (United States)

    Veerbeek, Janneke; Firet, Nienke J; Vijselaar, Wouter; Elbersen, Rick; Gardeniers, Han; Huskens, Jurriaan

    2017-01-11

    Silicon-based solar fuel devices require passivation for optimal performance yet at the same time need functionalization with (photo)catalysts for efficient solar fuel production. Here, we use molecular monolayers to enable electrical passivation and simultaneous functionalization of silicon-based solar cells. Organic monolayers were coupled to silicon surfaces by hydrosilylation in order to avoid an insulating silicon oxide layer at the surface. Monolayers of 1-tetradecyne were shown to passivate silicon micropillar-based solar cells with radial junctions, by which the efficiency increased from 8.7% to 9.9% for n + /p junctions and from 7.8% to 8.8% for p + /n junctions. This electrical passivation of the surface, most likely by removal of dangling bonds, is reflected in a higher shunt resistance in the J-V measurements. Monolayers of 1,8-nonadiyne were still reactive for click chemistry with a model catalyst, thus enabling simultaneous passivation and future catalyst coupling.

  20. Alloyed Aluminum Contacts for Silicon Solar Cells

    International Nuclear Information System (INIS)

    Tin Tin Aye

    2010-12-01

    Aluminium is usually deposited and alloyed at the back of p-p silicon solar cell for making a good ohmic contact and establishing a back electric field which avoids carrier recombination of the back surface. It was the deposition of aluminum on multicrystalline silicon (mc-Si) substrate at various annealing temperature. Physical and elemental analysis was carried out by using scanning electron microscopy (SEM) and X-rays diffraction (XRD). The electrical (I-V) characteristic of the photovoltaic cell was also measured.

  1. Recombination via point defects and their complexes in solar silicon

    Energy Technology Data Exchange (ETDEWEB)

    Peaker, A.R.; Markevich, V.P.; Hamilton, B. [Photon Science Institute, University of Manchester, Manchester M13 9PL (United Kingdom); Parada, G.; Dudas, A.; Pap, A. [Semilab, 2 Prielle Kornelia Str, 1117 Budapest (Hungary); Don, E. [Semimetrics, PO Box 36, Kings Langley, Herts WD4 9WB (United Kingdom); Lim, B.; Schmidt, J. [Institute for Solar Energy Research (ISFH) Hamlen, 31860 Emmerthal (Germany); Yu, L.; Yoon, Y.; Rozgonyi, G. [Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695-7907 (United States)

    2012-10-15

    Electronic grade Czochralski and float zone silicon in the as grown state have a very low concentration of recombination generation centers (typically <10{sup 10} cm{sup -3}). Consequently, in integrated circuit technologies using such material, electrically active inadvertent impurities and structural defects are rarely detectable. The quest for cheap photovoltaic cells has led to the use of less pure silicon, multi-crystalline material, and low cost processing for solar applications. Cells made in this way have significant extrinsic recombination mechanisms. In this paper we review recombination involving defects and impurities in single crystal and in multi-crystalline solar silicon. Our main techniques for this work are recombination lifetime mapping measurements using microwave detected photoconductivity decay and variants of deep level transient spectroscopy (DLTS). In particular, we use Laplace DLTS to distinguish between isolated point defects, small precipitate complexes and decorated extended defects. We compare the behavior of some common metallic contaminants in solar silicon in relation to their effect on carrier lifetime and cell efficiency. Finally, we consider the role of hydrogen passivation in relation to transition metal contaminants, grain boundaries and dislocations. We conclude that recombination via point defects can be significant but in most multi-crystalline material the dominant recombination path is via decorated dislocation clusters within grains with little contribution to the overall recombination from grain boundaries. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  2. Origami-enabled deformable silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Tang, Rui; Huang, Hai; Liang, Hanshuang; Liang, Mengbing [School of Electrical, Computer and Energy Engineering, Arizona State University, Tempe, Arizona 85287 (United States); Tu, Hongen; Xu, Yong [Electrical and Computer Engineering, Wayne State University, 5050 Anthony Wayne Dr., Detroit, Michigan 48202 (United States); Song, Zeming; Jiang, Hanqing, E-mail: hanqing.jiang@asu.edu [School for Engineering of Matter, Transport and Energy, Arizona State University, Tempe, Arizona 85287 (United States); Yu, Hongyu, E-mail: hongyu.yu@asu.edu [School of Electrical, Computer and Energy Engineering, Arizona State University, Tempe, Arizona 85287 (United States); School of Earth and Space Exploration, Arizona State University, Tempe, Arizona 85287 (United States)

    2014-02-24

    Deformable electronics have found various applications and elastomeric materials have been widely used to reach flexibility and stretchability. In this Letter, we report an alternative approach to enable deformability through origami. In this approach, the deformability is achieved through folding and unfolding at the creases while the functional devices do not experience strain. We have demonstrated an example of origami-enabled silicon solar cells and showed that this solar cell can reach up to 644% areal compactness while maintaining reasonable good performance upon cyclic folding/unfolding. This approach opens an alternative direction of producing flexible, stretchable, and deformable electronics.

  3. Origami-enabled deformable silicon solar cells

    International Nuclear Information System (INIS)

    Tang, Rui; Huang, Hai; Liang, Hanshuang; Liang, Mengbing; Tu, Hongen; Xu, Yong; Song, Zeming; Jiang, Hanqing; Yu, Hongyu

    2014-01-01

    Deformable electronics have found various applications and elastomeric materials have been widely used to reach flexibility and stretchability. In this Letter, we report an alternative approach to enable deformability through origami. In this approach, the deformability is achieved through folding and unfolding at the creases while the functional devices do not experience strain. We have demonstrated an example of origami-enabled silicon solar cells and showed that this solar cell can reach up to 644% areal compactness while maintaining reasonable good performance upon cyclic folding/unfolding. This approach opens an alternative direction of producing flexible, stretchable, and deformable electronics

  4. Environmentally benign silicon solar cell manufacturing

    Energy Technology Data Exchange (ETDEWEB)

    Tsuo, Y.S. [National Renewable Energy Lab., Golden, CO (United States); Gee, J.M. [Sandia National Labs., Albuquerque, NM (United States); Menna, P. [National Agency for New Technologies Energy and Environment, Portici (Italy); Strebkov, D.S.; Pinov, A.; Zadde, V. [Intersolarcenter, Moscow (Russian Federation)

    1998-09-01

    The manufacturing of silicon devices--from polysilicon production, crystal growth, ingot slicing, wafer cleaning, device processing, to encapsulation--requires many steps that are energy intensive and use large amounts of water and toxic chemicals. In the past two years, the silicon integrated-circuit (IC) industry has initiated several programs to promote environmentally benign manufacturing, i.e., manufacturing practices that recover, recycle, and reuse materials resources with a minimal consumption of energy. Crystalline-silicon solar photovoltaic (PV) modules, which accounted for 87% of the worldwide module shipments in 1997, are large-area devices with many manufacturing steps similar to those used in the IC industry. Obviously, there are significant opportunities for the PV industry to implement more environmentally benign manufacturing approaches. Such approaches often have the potential for significant cost reduction by reducing energy use and/or the purchase volume of new chemicals and by cutting the amount of used chemicals that must be discarded. This paper will review recent accomplishments of the IC industry initiatives and discuss new processes for environmentally benign silicon solar-cell manufacturing.

  5. A cost roadmap for silicon heterojunction solar cells

    NARCIS (Netherlands)

    Louwen, A.; van Sark, W.; Schropp, R.E.I.; Faaij, A.

    2016-01-01

    Research and development of silicon heterojunction (SHJ) solar cells has seen a marked increase since the recent expiry of core patents describing SHJ technology. SHJ solar cells are expected to offer various cost benefits compared to conventional crystalline silicon solar cells. This paper analyses

  6. A Cost Roadmap for Silicon Heterojunction Solar Cells

    NARCIS (Netherlands)

    Louwen, A.; van Sark, W.G.J.H.M.; Schropp, Ruud; Faaij, A.

    Research and development of silicon heterojunction (SHJ) solar cells has seen a marked increase since the recent expiry of core patents describing SHJ technology. SHJ solar cells are expected to offer various cost benefits compared to conventional crystalline silicon solar cells. This paper analyses

  7. Effects of impurities on silicon solar-cell performance

    Science.gov (United States)

    Hopkins, R. H.

    1986-01-01

    Model analyses indicate that sophisticated solar cell designs (back surface fields, optical reflectors, surface passivation, and double layer antireflective coatings) can produce devices with conversion efficiencies above 20%. To realize this potential, the quality of the silicon from which the cells are made must be improved; and these excellent electrical properties must be maintained during device processing. As the cell efficiency rises, the sensitivity to trace contaminants also increases. For example, the threshold Ti impurity concentraion at which cell performance degrades is more than an order of magnitude lower for an 18% cell than for a 16% cell. Similar behavior occurs for numerous other metal species which introduce deep level traps that stimulate the recombination of photogenerated carriers in silicon. Purification via crystal growth in conjunction with gettering steps to preserve the large diffusion length of the as grown material can lead to the production of devices with efficiencies above 18%, as verified experimentally.

  8. Optoelectronic enhancement of monocrystalline silicon solar cells by porous silicon-assisted mechanical grooving

    Energy Technology Data Exchange (ETDEWEB)

    Ben Rabha, Mohamed; Mohamed, Seifeddine Belhadj; Dimassi, Wissem; Gaidi, Mounir; Ezzaouia, Hatem; Bessais, Brahim [Laboratoire de Photovoltaique, Centre de Recherches et des Technologies de l' Energie, Technopole de Borj-Cedria, BP 95, 2050 Hammam-Lif (Tunisia)

    2011-03-15

    One of the most important factors influencing silicon solar cells performances is the front side reflectivity. Consequently, new methods for efficient reduction of this reflectivity are searched. This has always been done by creating a rough surface that enables incident light of being absorbed within the solar cell. Combination of texturization-porous silicon surface treatment was found to be an attractive technical solution for lowering the reflectivity of monocrystalline silicon (c-Si). The texturization of the monocrystalline silicon wafer was carried out by means of mechanical grooving. A specific etching procedure was then applied to form a thin porous silicon layer enabling to remove mechanical damages. This simple and low cost method reduces the total reflectivity from 29% to 7% in the 300 - 950 nm wavelength range and enhances the diffusion length of the minority carriers from 100 {mu}m to 790 {mu}m (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  9. Improved Optics in Monolithic Perovskite/Silicon Tandem Solar Cells with a Nanocrystalline Silicon Recombination Junction

    KAUST Repository

    Sahli, Florent

    2017-10-09

    Perovskite/silicon tandem solar cells are increasingly recognized as promi­sing candidates for next-generation photovoltaics with performance beyond the single-junction limit at potentially low production costs. Current designs for monolithic tandems rely on transparent conductive oxides as an intermediate recombination layer, which lead to optical losses and reduced shunt resistance. An improved recombination junction based on nanocrystalline silicon layers to mitigate these losses is demonstrated. When employed in monolithic perovskite/silicon heterojunction tandem cells with a planar front side, this junction is found to increase the bottom cell photocurrent by more than 1 mA cm−2. In combination with a cesium-based perovskite top cell, this leads to tandem cell power-conversion efficiencies of up to 22.7% obtained from J–V measurements and steady-state efficiencies of up to 22.0% during maximum power point tracking. Thanks to its low lateral conductivity, the nanocrystalline silicon recombination junction enables upscaling of monolithic perovskite/silicon heterojunction tandem cells, resulting in a 12.96 cm2 monolithic tandem cell with a steady-state efficiency of 18%.

  10. Improved Optics in Monolithic Perovskite/Silicon Tandem Solar Cells with a Nanocrystalline Silicon Recombination Junction

    KAUST Repository

    Sahli, Florent; Kamino, Brett A.; Werner, Jé ré mie; Brä uninger, Matthias; Paviet-Salomon, Bertrand; Barraud, Loris; Monnard, Raphaë l; Seif, Johannes Peter; Tomasi, Andrea; Jeangros, Quentin; Hessler-Wyser, Aï cha; De Wolf, Stefaan; Despeisse, Matthieu; Nicolay, Sylvain; Niesen, Bjoern; Ballif, Christophe

    2017-01-01

    Perovskite/silicon tandem solar cells are increasingly recognized as promi­sing candidates for next-generation photovoltaics with performance beyond the single-junction limit at potentially low production costs. Current designs for monolithic tandems rely on transparent conductive oxides as an intermediate recombination layer, which lead to optical losses and reduced shunt resistance. An improved recombination junction based on nanocrystalline silicon layers to mitigate these losses is demonstrated. When employed in monolithic perovskite/silicon heterojunction tandem cells with a planar front side, this junction is found to increase the bottom cell photocurrent by more than 1 mA cm−2. In combination with a cesium-based perovskite top cell, this leads to tandem cell power-conversion efficiencies of up to 22.7% obtained from J–V measurements and steady-state efficiencies of up to 22.0% during maximum power point tracking. Thanks to its low lateral conductivity, the nanocrystalline silicon recombination junction enables upscaling of monolithic perovskite/silicon heterojunction tandem cells, resulting in a 12.96 cm2 monolithic tandem cell with a steady-state efficiency of 18%.

  11. Flat-plate solar array project. Volume 3: Silicon sheet: Wafers and ribbons

    Science.gov (United States)

    Briglio, A.; Dumas, K.; Leipold, M.; Morrison, A.

    1986-01-01

    The primary objective of the Silicon Sheet Task of the Flat-Plate Solar Array (FSA) Project was the development of one or more low cost technologies for producing silicon sheet suitable for processing into cost-competitive solar cells. Silicon sheet refers to high purity crystalline silicon of size and thickness for fabrication into solar cells. Areas covered in the project were ingot growth and casting, wafering, ribbon growth, and other sheet technologies. The task made and fostered significant improvements in silicon sheet including processing of both ingot and ribbon technologies. An additional important outcome was the vastly improved understanding of the characteristics associated with high quality sheet, and the control of the parameters required for higher efficiency solar cells. Although significant sheet cost reductions were made, the technology advancements required to meet the task cost goals were not achieved.

  12. Impurity photovoltaic effect in silicon solar cell doped with sulphur: A numerical simulation

    International Nuclear Information System (INIS)

    Azzouzi, Ghania; Chegaar, Mohamed

    2011-01-01

    The impurity photovoltaic effect (IPV) has mostly been studied in various semiconductors such as silicon, silicon carbide and GaAs in order to increase infrared absorption and hence cell efficiency. In this work, sulphur is used as the IPV effect impurity incorporated in silicon solar cells. For our simulation we use the numerical device simulator (SCAPS). We calculate the solar cell performances (short circuit current density J sc , open circuit voltage V oc , conversion efficiency η and quantum efficiency QE). We study the influence of light trapping and certain impurity parameters like impurity concentration and position in the gap on the solar cell performances. Simulation results for IPV effect on silicon doped with sulphur show an improvement of the short circuit current and the efficiency for sulphur energy levels located far from the middle of the band gap especially at E c -E t =0.18 eV.

  13. Low-Temperature Growth of Hydrogenated Amorphous Silicon Carbide Solar Cell by Inductively Coupled Plasma Deposition Toward High Conversion Efficiency in Indoor Lighting.

    Science.gov (United States)

    Kao, Ming-Hsuan; Shen, Chang-Hong; Yu, Pei-Chen; Huang, Wen-Hsien; Chueh, Yu-Lun; Shieh, Jia-Min

    2017-10-05

    A p-a-SiC:H window layer was used in amorphous Si thin film solar cells to boost the conversion efficiency in an indoor lighting of 500 lx. The p-a-SiC:H window layer/p-a-Si:H buffer layer scheme moderates the abrupt band bending across the p/i interface for the enhancement of V OC , J SC and FF in the solar spectra of short wavelengths. The optimized thickness of i-a-Si:H absorber layer is 400 nm to achieve the conversion efficiency of ~9.58% in an AM1.5 G solar spectrum. However, the optimized thickness of the absorber layer can be changed from 400 to 600 nm in the indoor lighting of 500 lx, exhibiting the maximum output power of 25.56 μW/cm 2 . Furthermore, various durability tests with excellent performance were investigated, which are significantly beneficial to harvest the indoor lights for applications in the self-powered internet of thing (IoT).

  14. Towards hybrid heterojunction silicon solar cells with organic charge carrier selective contacts

    OpenAIRE

    Jäckle, Sara Lisa

    2017-01-01

    Photovoltaic is an essential part of the needed global transition towards renewable energies. Even though many materials have good absorption and energy conversion properties, the market is dominated by technologies based on crystalline silicon. Silicon has the advantage of being neither toxic nor rare on earth and it is very well investigated due to its extensive use in microelectronics. The best power conversion efficiencies of silicon solar cells and modules are achieved by sophisticated d...

  15. Industrial n-type solar cells with >20% cell efficiency

    Energy Technology Data Exchange (ETDEWEB)

    Romijn, I.G.; Anker, J.; Burgers, A.R.; Gutjahr, A.; Koppes, M.; Kossen, E.J.; Lamers, M.W.P.E.; Heurtault, Benoit; Saynova-Oosterling, D.S.; Tool, C.J.J. [ECN Solar Energy, Petten (Netherlands)

    2013-03-15

    To realize high efficiencies at low costs, ECN has developed the n-Pasha solar cell concept. The n-Pasha cell concept is a bifacial solar cell concept on n-Cz base material, with which average efficiencies of above 20% have been demonstrated. In this paper recent developments at ECN to improve the cost of ownership (lower Euro/Wp) of the n-Pasha cell concept are discussed. Two main drivers for the manufacturing costs of n-type solar cells are addressed: the n-type Cz silicon material and the silver consumption. We show that a large resistivity range between 2 and 8 cm can be tolerated for high cell efficiency, and that the costs due to the silver metallization can be significantly reduced while increasing the solar cell efficiency. Combining the improved efficiency and cost reduction makes the n-Pasha cell concept a very cost effective solution to manufacture high efficient solar cells and modules.

  16. Advances in solar silicon production

    International Nuclear Information System (INIS)

    Rustioni, M.; Pirazzi, R.; Tincani, M.; Margadonna, D.; Pizzini, S.

    1985-01-01

    The results of carbothermic reduction experiments carried out at a preindustrial scale with a 240 KVA submerged are furnace fed with pellets of carbon black and silica sand are reported and discussed. It was demonstrated that all powder agglomeration techniques used to fabricate the pellets (pellettizing, briquetting, extrusion) give rise to small or negligible contamination of the charge. The results of experiments support the view that furnace handling is a powerful source of impurity contamination. Contamination from furnace lining could be however controlled and rendered negligible by an improved furnace design and proper choice of refractory materials. Graphite or graphite coated tools could eventually improve also the furnace tapping and handling operations. The solution of these problems, which is in substantial progress in this case, presents however additional problems in the case of larger size furnace and presumibly will limit the size of furnaces for PMS production to 500-1000 KVA. As the authors demonstrated that the boron and phosphorous is not influenced by furnace operation, one can conclude that the use of the granulated lump quartz of higher purity quartz sands could reconduct our PMS within the specifications of a solar grade material

  17. Solar cell efficiency measurements

    International Nuclear Information System (INIS)

    Ostoja, P.

    1989-01-01

    Solar cells (and solar modules) have to be tested for their performance by means of sound reliable measurement procedures. The need for such measurements arises at various stages of research, of production, and of photovoltaic systems sizing and dimensioning. In fact, accurate measurements are necessary to the researcher, who studies new materials and new processes, to the manufacturer, who has to control his product and, finally, to the user, who needs sound measurements, in order to be in a position to make effective decisions about what kink of product will be needed and with what critical characteristics. In short, standard measurements that allow cells and modules to be characterized serve as a common language, allowing effective communication about products and requirements. 3 refs

  18. Silicon nanocrystals embedded in silicon carbide for tandem solar cell applications

    International Nuclear Information System (INIS)

    Schnabel, Manuel

    2015-01-01

    Tandem solar cells consist of multiple individual solar cells stacked in order of increasing bandgap, with the cell with highest bandgap towards the incident light. This allows photons to be absorbed in the cell that will convert them to electricity with the greatest efficiency, and is the only solar cell concept to surpass the theoretical efficiency limit of a conventional solar cell so far. This work is concerned with the development of silicon nanocrystals (Si NCs) embedded in silicon carbide, which are expected to have a higher bandgap than bulk Si due to quantum confinement, for use in the top cell of a two-junction tandem cell. Charge carrier transport and recombination were investigated as a function of various parameters. Distortion of luminescence spectra by optical interference was highlighted and a robust model to describe transport of majority carriers was developed. Furthermore, a range of processing steps required to produce a Si NC-based tandem cell were studied, culminating in the preparation of the first Si NC-based tandem cells. The resulting cells exhibited open-circuit voltages of 900 mV, demonstrating tandem cell functionality.

  19. Fabrication and Photovoltaic Characteristics of Coaxial Silicon Nanowire Solar Cells Prepared by Wet Chemical Etching

    Directory of Open Access Journals (Sweden)

    Chien-Wei Liu

    2012-01-01

    Full Text Available Nanostructured solar cells with coaxial p-n junction structures have strong potential to enhance the performances of the silicon-based solar cells. This study demonstrates a radial junction silicon nanowire (RJSNW solar cell that was fabricated simply and at low cost using wet chemical etching. Experimental results reveal that the reflectance of the silicon nanowires (SNWs declines as their length increases. The excellent light trapping was mainly associated with high aspect ratio of the SNW arrays. A conversion efficiency of ∼7.1% and an external quantum efficiency of ∼64.6% at 700 nm were demonstrated. Control of etching time and diffusion conditions holds great promise for the development of future RJSNW solar cells. Improving the electrode/RJSNW contact will promote the collection of carries in coaxial core-shell SNW array solar cells.

  20. Fabrication and doping methods for silicon nano- and micropillar arrays for solar cell applications: a review

    NARCIS (Netherlands)

    Elbersen, R.; Vijselaar, Wouter Jan, Cornelis; Tiggelaar, Roald M.; Gardeniers, Johannes G.E.; Huskens, Jurriaan

    2015-01-01

    Silicon is one of the main components of commercial solar cells and is used in many other solar-light-harvesting devices. The overall efficiency of these devices can be increased by the use of structured surfaces that contain nanometer- to micrometer-sized pillars with radial p/n junctions. High

  1. Effect of light intensity on the performance of silicon solar cell ...

    African Journals Online (AJOL)

    This work, presents the intense light effect on electrical parameters of silicon solar such as short circuit current, open circuit voltage, series and shunt resistances, maximum power, conversion efficiency, fill factor. After the resolution of the continuity equation which leads to the solar cell photocurrent and photovoltage ...

  2. Thin-film polycrystalline silicon solar cells

    Science.gov (United States)

    Funghnan, B. W.; Blanc, J.; Phillips, W.; Redfield, D.

    1980-08-01

    Thirty-four new solar cells were fabricated on Wacker Sislo substrates and the AM-1 parameters were measured. A detailed comparison was made between the measurement of minority carrier diffusion length by the OE method and the penetrating light laser scan grain boundary photoresponse linewidth method. The laser scan method has more experimental uncertainty and agrees within 10 to 50% with the QE method. It allows determination of L over a large area. Atomic hydrogen passivation studies continued on Wacker material by three techniques. A method of determining surface recombination velocity, s, from laser scan data was developed. No change in s in completed solar cells after H-plasma treatment was observed within experimental error. H-passivation of bare silicon cars as measured by the new laser scan photoconductivity technique showed very large effects.

  3. Silicon solar cell - from R and D to production

    International Nuclear Information System (INIS)

    Akhter, P.

    1995-01-01

    During last 30 years tremendous research and development efforts have concluded that tech-economically silicon is the most suitable material for the manufacturing of solar cells and a number of achievements have been made in the processing of both the materials nd devices. A number of novel structure have been designed and fabricated. The crystalline silicon technology has now become mature enough and is ready to take off from R/D laboratories to large scale fabrication. At laboratory scale the performance of monocrystalline silicon cells have already reached very close to the theoretical value. However the processing cost and efficiency being complimentary, the commercial cells, as a trade off, have to compromise at rather lower efficiencies. Further efforts of lowering the processing cost of both the material and devices are in progress. At the same time attempts are being made to understand the physics of all those factors that limit the efficiency; develop the technologies to eliminate or optimize such effects to reach limiting efficiency with lowest possible cost. All such factors, along with the development will be discussed. (author)

  4. Laser Process for Selective Emitter Silicon Solar Cells

    Directory of Open Access Journals (Sweden)

    G. Poulain

    2012-01-01

    Full Text Available Selective emitter solar cells can provide a significant increase in conversion efficiency. However current approaches need many technological steps and alignment procedures. This paper reports on a preliminary attempt to reduce the number of processing steps and therefore the cost of selective emitter cells. In the developed procedure, a phosphorous glass covered with silicon nitride acts as the doping source. A laser is used to open locally the antireflection coating and at the same time achieve local phosphorus diffusion. In this process the standard chemical etching of the phosphorous glass is avoided. Sheet resistance variation from 100 Ω/sq to 40 Ω/sq is demonstrated with a nanosecond UV laser. Numerical simulation of the laser-matter interaction is discussed to understand the dopant diffusion efficiency. Preliminary solar cells results show a 0.5% improvement compared with a homogeneous emitter structure.

  5. Thermodynamically efficient solar concentrators

    Science.gov (United States)

    Winston, Roland

    2012-10-01

    Non-imaging Optics is the theory of thermodynamically efficient optics and as such depends more on thermodynamics than on optics. Hence in this paper a condition for the "best" design is proposed based on purely thermodynamic arguments, which we believe has profound consequences for design of thermal and even photovoltaic systems. This new way of looking at the problem of efficient concentration depends on probabilities, the ingredients of entropy and information theory while "optics" in the conventional sense recedes into the background.

  6. Atomic-Layer-Deposited Transparent Electrodes for Silicon Heterojunction Solar Cells

    International Nuclear Information System (INIS)

    Demaurex, Benedicte; Seif, Johannes P.; Smit, Sjoerd; Macco, Bart; Kessels, W. M.; Geissbuhler, Jonas; De Wolf, Stefaan; Ballif, Christophe

    2014-01-01

    We examine damage-free transparent-electrode deposition to fabricate high-efficiency amorphous silicon/crystalline silicon heterojunction solar cells. Such solar cells usually feature sputtered transparent electrodes, the deposition of which may damage the layers underneath. Using atomic layer deposition, we insert thin protective films between the amorphous silicon layers and sputtered contacts and investigate their effect on device operation. We find that a 20-nm-thick protective layer suffices to preserve, unchanged, the amorphous silicon layers beneath. Insertion of such protective atomic-layer-deposited layers yields slightly higher internal voltages at low carrier injection levels. However, we identify the presence of a silicon oxide layer, formed during processing, between the amorphous silicon and the atomic-layer-deposited transparent electrode that acts as a barrier, impeding hole and electron collection

  7. Optimization of the silicon subcell for III-V on silicon multijunction solar cells: Key differences with conventional silicon technology

    Science.gov (United States)

    García-Tabarés, Elisa; Martín, Diego; García, Iván; Lelièvre, Jean François; Rey-Stolle, Ignacio

    2012-10-01

    Dual-junction solar cells formed by a GaAsP or GaInP top cell and a silicon (Si) bottom cell seem to be attractive candidates to materialize the long sought-for integration of III-V materials on Si for photovoltaic (PV) applications. Such integration would offer a cost breakthrough for PV technology, unifying the low cost of Si and the efficiency potential of III-V multijunction solar cells. The optimization of the Si solar cells properties in flat-plate PV technology is well-known; nevertheless, it has been proven that the behavior of Si substrates is different when processed in an MOVPE reactor In this study, we analyze several factors influencing the bottom subcell performance, namely, 1) the emitter formation as a result of phosphorus diffusion; 2) the passivation quality provided by the GaP nucleation layer; and 3) the process impact on the bottom subcell PV properties.

  8. Impurities in silicon and their impact on solar cell performance

    NARCIS (Netherlands)

    Coletti, Gianluca

    2011-01-01

    Photovoltaic conversion of solar energy is a rapidly growing technology. More than 80% of global solar cell production is currently based on silicon. The aim of this thesis is to understand the complex relation between impurity content of silicon starting material (“feedstock”) and the resulting

  9. Principles and operation of crystalline and amorphous silicon solar cells

    International Nuclear Information System (INIS)

    Chambouleyron, I.

    1983-01-01

    This paper deals with the fundamental aspects of photovoltaic energy conversion. Crystalline silicon solar cell physics together with design criteria and conversion losses are discussed. The general properties of hydrogenated amorphous silicon and the principles of a-Si:H solar cell operation are briefly reviewed. New trends in amorphous materials of photovoltaic interest and novel device structures are finally presented. (Author) [pt

  10. Silicon heterojunction solar cells with novel fluorinated n-type nanocrystalline silicon oxide emitters on p-type crystalline silicon

    Science.gov (United States)

    Dhar, Sukanta; Mandal, Sourav; Das, Gourab; Mukhopadhyay, Sumita; Pratim Ray, Partha; Banerjee, Chandan; Barua, Asok Kumar

    2015-08-01

    A novel fluorinated phosphorus doped silicon oxide based nanocrystalline material have been used to prepare heterojunction solar cells on flat p-type crystalline silicon (c-Si) Czochralski (CZ) wafers. The n-type nc-SiO:F:H material were deposited by radio frequency plasma enhanced chemical vapor deposition. Deposited films were characterized in detail by using atomic force microscopy (AFM), high resolution transmission electron microscopy (HRTEM), Raman, fourier transform infrared spectroscopy (FTIR) and optoelectronics properties have been studied using temperature dependent conductivity measurement, Ellipsometry, UV-vis spectrum analysis etc. It is observed that the cell fabricated with fluorinated silicon oxide emitter showing higher initial efficiency (η = 15.64%, Jsc = 32.10 mA/cm2, Voc = 0.630 V, FF = 0.77) for 1 cm2 cell area compare to conventional n-a-Si:H emitter (14.73%) on flat c-Si wafer. These results indicate that n type nc-SiO:F:H material is a promising candidate for heterojunction solar cell on p-type crystalline wafers. The high Jsc value is associated with excellent quantum efficiencies at short wavelengths (<500 nm).

  11. Enhancing Solar Cell Efficiency Using Photon Upconversion Materials.

    Science.gov (United States)

    Shang, Yunfei; Hao, Shuwei; Yang, Chunhui; Chen, Guanying

    2015-10-27

    Photovoltaic cells are able to convert sunlight into electricity, providing enough of the most abundant and cleanest energy to cover our energy needs. However, the efficiency of current photovoltaics is significantly impeded by the transmission loss of sub-band-gap photons. Photon upconversion is a promising route to circumvent this problem by converting these transmitted sub-band-gap photons into above-band-gap light, where solar cells typically have high quantum efficiency. Here, we summarize recent progress on varying types of efficient upconversion materials as well as their outstanding uses in a series of solar cells, including silicon solar cells (crystalline and amorphous), gallium arsenide (GaAs) solar cells, dye-sensitized solar cells, and other types of solar cells. The challenge and prospect of upconversion materials for photovoltaic applications are also discussed.

  12. Enhancing Solar Cell Efficiency Using Photon Upconversion Materials

    Directory of Open Access Journals (Sweden)

    Yunfei Shang

    2015-10-01

    Full Text Available Photovoltaic cells are able to convert sunlight into electricity, providing enough of the most abundant and cleanest energy to cover our energy needs. However, the efficiency of current photovoltaics is significantly impeded by the transmission loss of sub-band-gap photons. Photon upconversion is a promising route to circumvent this problem by converting these transmitted sub-band-gap photons into above-band-gap light, where solar cells typically have high quantum efficiency. Here, we summarize recent progress on varying types of efficient upconversion materials as well as their outstanding uses in a series of solar cells, including silicon solar cells (crystalline and amorphous, gallium arsenide (GaAs solar cells, dye-sensitized solar cells, and other types of solar cells. The challenge and prospect of upconversion materials for photovoltaic applications are also discussed

  13. Development of processes for the production of low cost silicon dendritic web for solar cells

    Science.gov (United States)

    Duncan, C. S.; Seidensticker, R. G.; Mchugh, J. P.; Hopkins, R. H.; Skutch, M. E.; Driggers, J. M.; Hill, F. E.

    1980-01-01

    High area output rates and continuous, automated growth are two key technical requirements for the growth of low-cost silicon ribbons for solar cells. By means of computer-aided furnace design, silicon dendritic web output rates as high as 27 sq cm/min have been achieved, a value in excess of that projected to meet a $0.50 per peak watt solar array manufacturing cost. The feasibility of simultaneous web growth while the melt is replenished with pelletized silicon has also been demonstrated. This step is an important precursor to the development of an automated growth system. Solar cells made on the replenished material were just as efficient as devices fabricated on typical webs grown without replenishment. Moreover, web cells made on a less-refined, pelletized polycrystalline silicon synthesized by the Battelle process yielded efficiencies up to 13% (AM1).

  14. Novel silicon phases and nanostructures for solar energy conversion

    Energy Technology Data Exchange (ETDEWEB)

    Wippermann, Stefan; He, Yuping; Vörös, Márton; Galli, Giulia

    2016-12-01

    Silicon exhibits a large variety of different bulk phases, allotropes, and composite structures, such as, e.g., clathrates or nanostructures, at both higher and lower densities compared with diamond-like Si-I. New Si structures continue to be discovered. These novel forms of Si offer exciting prospects to create Si based materials, which are non-toxic and earth-abundant, with properties tailored precisely towards specific applications. We illustrate how such novel Si based materials either in the bulk or as nanostructures may be used to significantly improve the efficiency of solar energy conversion devices.

  15. Laser-beam-induced current mapping evaluation of porous silicon-based passivation in polycrystalline silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Rabha, M. Ben; Bessais, B. [Laboratoire de Nanomateriaux et des Systemes pour l' Energie, Centre de Recherches et des Technologies de l' Energie - Technopole de Borj-Cedria BP 95, 2050 Hammam-Lif (Tunisia); Dimassi, W.; Bouaicha, M.; Ezzaouia, H. [Laboratoire de photovoltaique, des semiconducteurs et des nanostructures, Centre de Recherches et des Technologies de l' Energie - Technopole de Borj-Cedria BP 95, 2050 Hammam-Lif (Tunisia)

    2009-05-15

    In the present work, we report on the effect of introducing a superficial porous silicon (PS) layer on the performance of polycrystalline silicon (pc-Si) solar cells. Laser-beam-induced current (LBIC) mapping shows that the PS treatment on the emitter of pc-Si solar cells improves their quantum response and reduce the grain boundaries (GBs) activity. After the porous silicon treatment, mapping investigation shows an enhancement of the LBIC and the internal quantum efficiency (IQE), due to an improvement of the minority carrier diffusion length and the passivation of recombination centers at the GBs as compared to the reference substrate. It was quantitatively shown that porous silicon treatment can passivate both the grains and GBs. (author)

  16. Practical Efficiency of Photovoltaic Panel Used for Solar Vehicles

    Science.gov (United States)

    Koyuncu, T.

    2017-08-01

    In this experimental investigation, practical efficiency of semi-flexible monocrystalline silicon solar panel used for a solar powered car called “Firat Force” and a solar powered minibus called “Commagene” was determined. Firat Force has 6 solar PV modules, a maintenance free long life gel battery pack, a regenerative brushless DC electric motor and Commagene has 12 solar PV modules, a maintenance free long life gel battery pack, a regenerative brushless DC electric motor. In addition, both solar vehicles have MPPT (Maximum power point tracker), ECU (Electronic control unit), differential, instrument panel, steering system, brake system, brake and gas pedals, mechanical equipments, chassis and frame. These two solar vehicles were used for people transportation in Adiyaman city, Turkey, during one year (June 2010-May 2011) of test. As a result, the practical efficiency of semi-flexible monocrystalline silicon solar panel used for Firat Force and Commagene was determined as 13 % in despite of efficiency value of 18% (at 1000 W/m2 and 25 °C ) given by the producer company. Besides, the total efficiency (from PV panels to vehicle wheel) of the system was also defined as 9%.

  17. Strategies for doped nanocrystalline silicon integration in silicon heterojunction solar cells

    Czech Academy of Sciences Publication Activity Database

    Seif, J.; Descoeudres, A.; Nogay, G.; Hänni, S.; de Nicolas, S.M.; Holm, N.; Geissbühler, J.; Hessler-Wyser, A.; Duchamp, M.; Dunin-Borkowski, R.E.; Ledinský, Martin; De Wolf, S.; Ballif, C.

    2016-01-01

    Roč. 6, č. 5 (2016), s. 1132-1140 ISSN 2156-3381 R&D Projects: GA MŠk LM2015087 Institutional support: RVO:68378271 Keywords : microcrystalline silicon * nanocrystalline silicon * silicon heterojunctions (SHJs) * solar cells Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.712, year: 2016

  18. Monocrystalline silicon solar cells applied in photovoltaic system

    OpenAIRE

    L.A. Dobrzański; A. Drygała; M. Giedroć; M. Macek

    2012-01-01

    Purpose: The aim of the paper is to fabricate the monocrystalline silicon solar cells using the conventional technology by means of screen printing process and to make of them photovoltaic system.Design/methodology/approach: The investigation of current – voltage characteristic to determinate basic electrical properties of monocrystalline silicon solar cells were investigated under Standard Test Condition. Photovoltaic module was produced from solar cells with the largest short-circuit curren...

  19. Homojunction silicon solar cells doping by ion implantation

    Science.gov (United States)

    Milési, Frédéric; Coig, Marianne; Lerat, Jean-François; Desrues, Thibaut; Le Perchec, Jérôme; Lanterne, Adeline; Lachal, Laurent; Mazen, Frédéric

    2017-10-01

    Production costs and energy efficiency are the main priorities for the photovoltaic (PV) industry (COP21 conclusions). To lower costs and increase efficiency, we are proposing to reduce the number of processing steps involved in the manufacture of N-type Passivated Rear Totally Diffused (PERT) silicon solar cells. Replacing the conventional thermal diffusion doping steps by ion implantation followed by thermal annealing allows reducing the number of steps from 7 to 3 while maintaining similar efficiency. This alternative approach was investigated in the present work. Beamline and plasma immersion ion implantation (BLII and PIII) methods were used to insert n-(phosphorus) and p-type (boron) dopants into the Si substrate. With higher throughput and lower costs, PIII is a better candidate for the photovoltaic industry, compared to BL. However, the optimization of the plasma conditions is demanding and more complex than the beamline approach. Subsequent annealing was performed on selected samples to activate the dopants on both sides of the solar cell. Two annealing methods were investigated: soak and spike thermal annealing. Best performing solar cells, showing a PV efficiency of about 20%, was obtained using spike annealing with adapted ion implantation conditions.

  20. Effect of porous silicon on the performances of silicon solar cells during the porous silicon-based gettering procedure

    Energy Technology Data Exchange (ETDEWEB)

    Nouri, H.; Bessais, B. [Laboratoire de Nanomateriaux et des Systemes pour l' Energie, Centre de Recherches et des Technologies de l' Energie, Technopole de Borj-Cedria, BP 95, 2050 Hammam-Lif (Tunisia); Bouaicha, M. [Laboratoire de Photovoltaique, des Semi-conducteurs et des Nanostructures, Centre de Recherches et des Technologies de l' Energie, Technopole de Borj-Cedria, BP 95, 2050 Hammam-Lif (Tunisia)

    2009-10-15

    In this work we analyse the effect of porous silicon on the performances of multicrystalline silicon (mc-Si) solar cells during the porous silicon-based gettering procedure. This procedure consists of forming PS layers on both front and back sides of the mc-Si wafers followed by an annealing in an infrared furnace under a controlled atmosphere at different temperatures. Three sets of samples (A, B and C) have been prepared; for samples A and B, the PS films were removed before and after annealing, respectively. In order to optimize the annealing temperature, we measure the defect density at a selected grain boundary (GB) using the dark current-voltage (I-V) characteristics across the GB itself. The annealing temperature was optimized to 1000 C. The effect of these treatments on the performances of mc-Si solar cells was studied by means of the current-voltage characteristic (at AM 1.5) and the internal quantum efficiency (IQE). The results obtained for cell A and cell B were compared to those obtained on a reference cell (C). (author)

  1. Simulation and Optimization of Silicon Solar Cell Back Surface Field

    Directory of Open Access Journals (Sweden)

    Souad TOBBECHE

    2015-11-01

    Full Text Available In this paper, TCAD Silvaco (Technology Computer Aided Design software has been used to study the Back Surface Field (BSF effect of a p+ silicon layer for a n+pp+ silicon solar cell. To study this effect, the J-V characteristics and the external quantum efficiency (EQE are simulated under AM 1.5 illumination for two types of cells. The first solar cell is without BSF (n+p structure while the second one is with BSF (n+pp+ structure. The creation of the BSF on the rear face of the cell results in efficiency h of up to 16.06% with a short-circuit current density Jsc = 30.54 mA/cm2, an open-circuit voltage Voc = 0.631 V, a fill factor FF = 0.832 and a clear improvement of the spectral response obtained in the long wavelengths range. An electric field and a barrier of potential are created by the BSF and located at the junction p+/p with a maximum of 5800 V/cm and 0.15 V, respectively. The optimization of the BSF layer shows that the cell performance improves with the p+ thickness between 0.35 – 0.39 µm, the p+ doping dose is about 2 × 1014 cm-2, the maximum efficiency up to 16.19 %. The cell efficiency is more sensitive to the value of the back surface recombination velocity above a value of 103 cm/s in n+p than n+pp+ solar cell.DOI: http://dx.doi.org/10.5755/j01.ms.21.4.9565

  2. Printable nanostructured silicon solar cells for high-performance, large-area flexible photovoltaics.

    Science.gov (United States)

    Lee, Sung-Min; Biswas, Roshni; Li, Weigu; Kang, Dongseok; Chan, Lesley; Yoon, Jongseung

    2014-10-28

    Nanostructured forms of crystalline silicon represent an attractive materials building block for photovoltaics due to their potential benefits to significantly reduce the consumption of active materials, relax the requirement of materials purity for high performance, and hence achieve greatly improved levelized cost of energy. Despite successful demonstrations for their concepts over the past decade, however, the practical application of nanostructured silicon solar cells for large-scale implementation has been hampered by many existing challenges associated with the consumption of the entire wafer or expensive source materials, difficulties to precisely control materials properties and doping characteristics, or restrictions on substrate materials and scalability. Here we present a highly integrable materials platform of nanostructured silicon solar cells that can overcome these limitations. Ultrathin silicon solar microcells integrated with engineered photonic nanostructures are fabricated directly from wafer-based source materials in configurations that can lower the materials cost and can be compatible with deterministic assembly procedures to allow programmable, large-scale distribution, unlimited choices of module substrates, as well as lightweight, mechanically compliant constructions. Systematic studies on optical and electrical properties, photovoltaic performance in experiments, as well as numerical modeling elucidate important design rules for nanoscale photon management with ultrathin, nanostructured silicon solar cells and their interconnected, mechanically flexible modules, where we demonstrate 12.4% solar-to-electric energy conversion efficiency for printed ultrathin (∼ 8 μm) nanostructured silicon solar cells when configured with near-optimal designs of rear-surface nanoposts, antireflection coating, and back-surface reflector.

  3. Solar photovoltaic research and development program of the Air Force Aero Propulsion Laboratory. [silicon solar cell applicable to satellite power systems

    Science.gov (United States)

    Wise, J.

    1979-01-01

    Progress is reported in the following areas: laser weapon effects, solar silicon solar cell concepts, and high voltage hardened, high power system technology. Emphasis is placed on solar cells with increased energy conversion efficiency and radiation resistance characteristics for application to satellite power systems.

  4. Crystalline Silicon Solar Cells with Thin Silicon Passivation Film Deposited prior to Phosphorous Diffusion

    Directory of Open Access Journals (Sweden)

    Ching-Tao Li

    2014-01-01

    Full Text Available We demonstrate the performance improvement of p-type single-crystalline silicon (sc-Si solar cells resulting from front surface passivation by a thin amorphous silicon (a-Si film deposited prior to phosphorus diffusion. The conversion efficiency was improved for the sample with an a-Si film of ~5 nm thickness deposited on the front surface prior to high-temperature phosphorus diffusion, with respect to the samples with an a-Si film deposited on the front surface after phosphorus diffusion. The improvement in conversion efficiency is 0.4% absolute with respect to a-Si film passivated cells, that is, the cells with an a-Si film deposited on the front surface after phosphorus diffusion. The new technique provided a 0.5% improvement in conversion efficiency compared to the cells without a-Si passivation. Such performance improvements result from reduced surface recombination as well as lowered contact resistance, the latter of which induces a high fill factor of the solar cell.

  5. Comparison of the nonradiative deep levels in silicon solar cells made of monocrystalline, polycrystalline and amorphous silicon using deep level transient spectroscopy (DLTS)

    International Nuclear Information System (INIS)

    Hammadeh, H.; Darwich, R.

    2005-03-01

    The aim of this work is to study the defects in solar cells fabricated from crystalline, polycrystalline and amorphous silicon. Using Deep Level Transient Spectroscopy technique, (DLTS), we have determined their activation energies, concentrations and their effect on the solar cell efficiency. Our results show a DLTS peak in crystalline silicon which we could attribute to tow peaks originating from iron contamination. In the polycrystalline based solar cells we observed a series of non conventional DLTS peaks while in amorphous silicon we observed a peak using low measurement frequencies (between 8 kHz and 20 kHz). We studied these defects and determined their activation energies as well as the capture cross section for one of them. We suggest a possible configuration of these defects. We cannot able to study the effect of these defects on the solar cell efficiency because we have not the experimental set-up which measure the solar cell efficiency. (Authors)

  6. High efficiency double sided solar cells

    International Nuclear Information System (INIS)

    Seddik, M.M.

    1990-06-01

    Silicon technology state of the art for single crystalline was given to be limited to less than 20% efficiency. A proposed new form of photovoltaic solar cell of high current high efficiency with double sided structures has been given. The new forms could be n ++ pn ++ or p ++ np ++ double side junctions. The idea of double sided devices could be understood as two solar cells connected back-to-back in parallel electrical connection, in which the current is doubled if the cell is illuminated from both sides by a V-shaped reflector. The cell is mounted to the reflector such that each face is inclined at an angle of 45 deg. C to each side of the reflector. The advantages of the new structure are: a) High power devices. b) Easy to fabricate. c) The cells are used vertically instead of horizontal use of regular solar cell which require large area to install. This is very important in power stations and especially for satellite installation. If the proposal is made real and proved to be experimentally feasible, it would be a new era for photovoltaic solar cells since the proposal has already been extended to even higher currents. The suggested structures could be stated as: n ++ pn ++ Vp ++ np ++ ;n ++ pn ++ Vn ++ pn ++ ORp ++ np ++ Vp ++ np ++ . These types of structures are formed in wedged shape to employ indirect illumination by either parabolic; conic or V-shaped reflectors. The advantages of these new forms are low cost; high power; less in size and space; self concentrating; ... etc. These proposals if it happens to find their ways to be achieved experimentally, I think they will offer a short path to commercial market and would have an incredible impact on solar cell technology and applications. (author). 12 refs, 5 figs

  7. Materials That Enhance Efficiency and Radiation Resistance of Solar Cells

    Science.gov (United States)

    Sun, Xiadong; Wang, Haorong

    2012-01-01

    A thin layer (approximately 10 microns) of a novel "transparent" fluorescent material is applied to existing solar cells or modules to effectively block and convert UV light, or other lower solar response waveband of solar radiation, to visible or IR light that can be more efficiently used by solar cells for additional photocurrent. Meanwhile, the layer of fluorescent coating material remains fully "transparent" to the visible and IR waveband of solar radiation, resulting in a net gain of solar cell efficiency. This innovation alters the effective solar spectral power distribution to which an existing cell gets exposed, and matches the maximum photovoltaic (PV) response of existing cells. By shifting a low PV response waveband (e.g., UV) of solar radiation to a high PV response waveband (e.g. Vis-Near IR) with novel fluorescent materials that are transparent to other solar-cell sensitive wavebands, electrical output from solar cells will be enhanced. This approach enhances the efficiency of solar cells by converting UV and high-energy particles in space that would otherwise be wasted to visible/IR light. This innovation is a generic technique that can be readily implemented to significantly increase efficiencies of both space and terrestrial solar cells, without incurring much cost, thus bringing a broad base of economical, social, and environmental benefits. The key to this approach is that the "fluorescent" material must be very efficient, and cannot block or attenuate the "desirable" and unconverted" waveband of solar radiation (e.g. Vis-NIR) from reaching the cells. Some nano-phosphors and novel organometallic complex materials have been identified that enhance the energy efficiency on some state-of-the-art commercial silicon and thin-film-based solar cells by over 6%.

  8. Silicon Thin-Film Solar Cells

    Directory of Open Access Journals (Sweden)

    Guy Beaucarne

    2007-01-01

    with plasma-enhanced chemical vapor deposition (PECVD. In spite of the fundamental limitation of this material due to its disorder and metastability, the technology is now gaining industrial momentum thanks to the entry of equipment manufacturers with experience with large-area PECVD. Microcrystalline Si (also called nanocrystalline Si is a material with crystallites in the nanometer range in an amorphous matrix, and which contains less defects than amorphous silicon. Its lower bandgap makes it particularly appropriate as active material for the bottom cell in tandem and triple junction devices. The combination of an amorphous silicon top cell and a microcrystalline bottom cell has yielded promising results, but much work is needed to implement it on large-area and to limit light-induced degradation. Finally thin-film polysilicon solar cells, with grain size in the micrometer range, has recently emerged as an alternative photovoltaic technology. The layers have a grain size ranging from 1 μm to several tens of microns, and are formed at a temperature ranging from 600 to more than 1000∘C. Solid Phase Crystallization has yielded the best results so far but there has recently been fast progress with seed layer approaches, particularly those using the aluminum-induced crystallization technique.

  9. Fabricating 40 µm-thin silicon solar cells with different orientations by using SLiM-cut method

    Science.gov (United States)

    Wang, Teng-Yu; Chen, Chien-Hsun; Shiao, Jui-Chung; Chen, Sung-Yu; Du, Chen-Hsun

    2017-10-01

    Thin silicon foils with different crystal orientations were fabricated using the stress induced lift-off (SLiM-cut) method. The thickness of the silicon foils was approximately 40 µm. The ≤ft foil had a smoother surface than the ≤ft foil. With surface passivation, the minority carrier lifetimes of the ≤ft and ≤ft silicon foil were 1.0 µs and 1.6 µs, respectively. In this study, 4 cm2-thin silicon solar cells with heterojunction structures were fabricated. The energy conversion efficiencies were determined to be 10.74% and 14.74% for the ≤ft and ≤ft solar cells, respectively. The surface quality of the silicon foils was determined to affect the solar cell character. This study demonstrated that fabricating the solar cell by using silicon foil obtained from the SLiM-cut method is feasible.

  10. Eliminating Light-Induced Degradation in Commercial p-Type Czochralski Silicon Solar Cells

    Directory of Open Access Journals (Sweden)

    Brett Hallam

    2017-12-01

    Full Text Available This paper discusses developments in the mitigation of light-induced degradation caused by boron-oxygen defects in boron-doped Czochralski grown silicon. Particular attention is paid to the fabrication of industrial silicon solar cells with treatments for sensitive materials using illuminated annealing. It highlights the importance and desirability of using hydrogen-containing dielectric layers and a subsequent firing process to inject hydrogen throughout the bulk of the silicon solar cell and subsequent illuminated annealing processes for the formation of the boron-oxygen defects and simultaneously manipulate the charge states of hydrogen to enable defect passivation. For the photovoltaic industry with a current capacity of approximately 100 GW peak, the mitigation of boron-oxygen related light-induced degradation is a necessity to use cost-effective B-doped silicon while benefitting from the high-efficiency potential of new solar cell concepts.

  11. Enhancement of photovoltaic properties of multicrystalline silicon solar cells by combination of buried metallic contacts and thin porous silicon

    Energy Technology Data Exchange (ETDEWEB)

    Ben Rabha, M.; Bessais, B. [Laboratoire de Photovoltaique, Centre de Recherches et des Technologies de l' Energie, Technopole de Borj-Cedria, BP 95, 2050 Hammam-Lif (Tunisia)

    2010-03-15

    Photovoltaic properties of buried metallic contacts (BMCs) with and without application of a front porous silicon (PS) layer on multicrystalline silicon (mc-Si) solar cells were investigated. A Chemical Vapor Etching (CVE) method was used to perform front PS layer and BMCs of mc-Si solar cells. Good electrical performance for the mc-Si solar cells was observed after combination of BMCs and thin PS films. As a result the current-voltage (I-V) characteristics and the internal quantum efficiency (IQE) were improved, and the effective minority carrier diffusion length (Ln) increases from 75 to 110 {mu}m after BMCs achievement. The reflectivity was reduced to 8% in the 450-950 nm wavelength range. This simple and low cost technology induces a 12% conversion efficiency (surface area = 3.2 cm{sup 2}). The obtained results indicate that the BMCs improve charge carrier collection while the PS layer passivates the front surface. (author)

  12. Optical Evaluation of the Rear Contacts of Crystalline Silicon Solar Cells by Coupled Electromagnetic and Statistical Ray-Optics Modeling

    KAUST Repository

    Dabirian, Ali; Morales-Masis, Monica; Haug, Franz-Josef; De Wolf, Stefaan; Ballif, Christophe

    2017-01-01

    High-efficiency crystalline silicon (c-Si) solar cells increasingly feature sophisticated electron and hole contacts aimed at minimizing electronic losses. At the rear of photovoltaic devices, such contacts—usually consisting of stacks of functional

  13. Solar cell structure incorporating a novel single crystal silicon material

    Science.gov (United States)

    Pankove, Jacques I.; Wu, Chung P.

    1983-01-01

    A novel hydrogen rich single crystal silicon material having a band gap energy greater than 1.1 eV can be fabricated by forming an amorphous region of graded crystallinity in a body of single crystalline silicon and thereafter contacting the region with atomic hydrogen followed by pulsed laser annealing at a sufficient power and for a sufficient duration to recrystallize the region into single crystal silicon without out-gassing the hydrogen. The new material can be used to fabricate semiconductor devices such as single crystal silicon solar cells with surface window regions having a greater band gap energy than that of single crystal silicon without hydrogen.

  14. Black Silicon formation using dry etching for solar cells applications

    International Nuclear Information System (INIS)

    Murias, D.; Reyes-Betanzo, C.; Moreno, M.; Torres, A.; Itzmoyotl, A.; Ambrosio, R.; Soriano, M.; Lucas, J.; Cabarrocas, P. Roca i

    2012-01-01

    A study on the formation of Black Silicon on crystalline silicon surface using SF 6 /O 2 and SF 6 /O 2 /CH 4 based plasmas in a reactive ion etching (RIE) system is presented. The effect of the RF power, chamber pressure, process time, gas flow rates, and gas mixtures on the texture of silicon surface has been analyzed. Completely Black Silicon surfaces containing pyramid like structures have been obtained, using an optimized mask-free plasma process. Moreover, the Black Silicon surfaces have demonstrated average values of 1% and 4% for specular and diffuse reflectance respectively, feature that is suitable for the fabrication of low cost solar cells.

  15. Enhanced light absorption in an ultrathin silicon solar cell utilizing plasmonic nanostructures

    Science.gov (United States)

    Xiao, Sanshui; Mortensen, Niels A.

    2012-10-01

    Nowadays, bringing photovoltaics to the market is mainly limited by high cost of electricity produced by the photovoltaic solar cell. Thin-film photovoltaics offers the potential for a significant cost reduction compared to traditional photovoltaics. However, the performance of thin-film solar cells is generally limited by poor light absorption. We propose an ultrathin-film silicon solar cell configuration based on SOI structure, where the light absorption is enhanced by use of plasmonic nanostructures. By placing a one-dimensional plasmonic nanograting on the bottom of the solar cell, the generated photocurrent for a 200 nm-thickness crystalline silicon solar cell can be enhanced by 90% in the considered wavelength range. These results are paving a promising way for the realization of high-efficiency thin-film solar cells.

  16. Review of New Technology for Preparing Crystalline Silicon Solar Cell Materials by Metallurgical Method

    Science.gov (United States)

    Li, Man; Dai, Yongnian; Ma, Wenhui; Yang, Bin; Chu, Qingmei

    2017-11-01

    The goals of greatly reducing the photovoltaic power cost and making it less than that of thermal power to realize photovoltaic power grid parity without state subsidies are focused on in this paper. The research status, key technologies and development of the new technology for preparing crystalline silicon solar cell materials by metallurgical method at home and abroad are reviewed. The important effects of impurities and defects in crystalline silicon on its properties are analysed. The importance of new technology on reducing production costs and improving its quality to increase the cell conversion efficiency are emphasized. The previous research results show that the raw materials of crystalline silicon are extremely abundant. The product of crystalline silicon can meet the quality requirements of solar cell materials: Si ≥ 6 N, P 1 Ω cm, minority carrier life > 25 μs cell conversion efficiency of about 19.3%, the product costs energy consumption energy consumption, low carbon and sustainable development are prospected.

  17. Device physics underlying silicon heterojunction and passivating-contact solar cells: A topical review

    KAUST Repository

    Chavali, Raghu V. K.

    2018-01-15

    The device physics of commercially dominant diffused-junction silicon solar cells is well understood, allowing sophisticated optimization of this class of devices. Recently, so-called passivating-contact solar cell technologies have become prominent, with Kaneka setting the world\\'s silicon solar cell efficiency record of 26.63% using silicon heterojunction contacts in an interdigitated configuration. Although passivating-contact solar cells are remarkably efficient, their underlying device physics is not yet completely understood, not in the least because they are constructed from diverse materials that may introduce electronic barriers in the current flow. To bridge this gap in understanding, we explore the device physics of passivating contact silicon heterojunction (SHJ) solar cells. Here, we identify the key properties of heterojunctions that affect cell efficiency, analyze the dependence of key heterojunction properties on carrier transport under light and dark conditions, provide a self-consistent multiprobe approach to extract heterojunction parameters using several characterization techniques (including dark J-V, light J-V, C-V, admittance spectroscopy, and Suns-Voc), propose design guidelines to address bottlenecks in energy production in SHJ cells, and develop a process-to-module modeling framework to establish the module\\'s performance limits. We expect that our proposed guidelines resulting from this multiscale and self-consistent framework will improve the performance of future SHJ cells as well as other passivating contact-based solar cells.

  18. Single crystalline silicon solar cells with rib structure

    Directory of Open Access Journals (Sweden)

    Shuhei Yoshiba

    2017-02-01

    Full Text Available To improve the conversion efficiency of Si solar cells, we have developed a thin Si wafer-based solar cell that uses a rib structure. The open-circuit voltage of a solar cell is known to increase with deceasing wafer thickness if the cell is adequately passivated. However, it is not easy to handle very thin wafers because they are brittle and are subject to warpage. We fabricated a lattice-shaped rib structure on the rear side of a thin Si wafer to improve the wafer’s strength. A silicon nitride film was deposited on the Si wafer surface and patterned to form a mask to fabricate the lattice-shaped rib, and the wafer was then etched using KOH to reduce the thickness of the active area, except for the rib region. Using this structure in a Si heterojunction cell, we demonstrated that a high open-circuit voltage (VOC could be obtained by thinning the wafer without sacrificing its strength. A wafer with thickness of 30 μm was prepared easily using this structure. We then fabricated Si heterojunction solar cells using these rib wafers, and measured their implied VOC as a function of wafer thickness. The measured values were compared with device simulation results, and we found that the measured VOC agrees well with the simulated results. To optimize the rib and cell design, we also performed device simulations using various wafer thicknesses and rib dimensions.

  19. Nanolayer surface passivation schemes for silicon solar cells

    NARCIS (Netherlands)

    Dingemans, G.

    2011-01-01

    This thesis is concerned with nanolayer surface passivation schemes and corresponding deposition processes, for envisaged applications in crystalline silicon solar cells. Surface passivation, i.e. the reduction of electronic recombination processes at semiconductor surfaces, is essential for

  20. Development and basic photovoltaic characteristics of a solar generator with double-sided silicon cells

    International Nuclear Information System (INIS)

    Aliev, R.; Mansurov, Kh.

    2015-01-01

    A new solar generator consisting of double-sided silicon sensing elements is described. The basic photovoltaic parameters of solar generators are made of mono- and polycrystalline silicon solar cells. (author)

  1. Burst annealing of electron damage in silicon solar cells

    International Nuclear Information System (INIS)

    Day, A.C.; Horne, W.E.; Thompson, M.A.; Lancaster, C.A.

    1985-01-01

    A study has been performed of burst annealing of electron damage in silicon solar cells. Three groups of cells consisting of 3 and 0.3 ohm-cm silicon were exposed to fluences of 2 x 10 to the 14th power, 4 x 10 to the 14th power, and 8 x 10 to the 14th power 1-MeV electrons/sq cm, respectively. They were subsequently subjected to 1-minute bursts of annealing at 500 C. The 3 ohm-cm cells showed complete recovery from each fluence level. The 0.3 ohm-cm cells showed complete recovery from the 2 x 10 to the 14th power e/sq cm fluence; however, some of the 0.3 ohm-cm cells did not recover completely from the higher influences. From an analysis of the results it is concluded that burst annealing of moderate to high resistivity silicon cell arrays in space is feasible and that with more complete understanding, even the potentially higher efficiency low resistivity cells may be usable in annealable arrays in space

  2. Wide-bandgap epitaxial heterojunction windows for silicon solar cells

    Science.gov (United States)

    Landis, Geoffrey A.; Loferski, Joseph J.; Beaulieu, Roland; Sekula-Moise, Patricia A.; Vernon, Stanley M.

    1990-01-01

    It is shown that the efficiency of a solar cell can be improved if minority carriers are confined by use of a wide-bandgap heterojunction window. For silicon (lattice constant a = 5.43 A), nearly lattice-matched wide-bandgap materials are ZnS (a = 5.41 A) and GaP (a = 5.45 A). Isotype n-n heterojuntions of both ZnS/Si and GaP/Si were grown on silicon n-p homojunction solar cells. Successful deposition processes used were metalorganic chemical vapor deposition (MO-CVD) for GaP and ZnS, and vacuum evaporation of ZnS. Planar (100) and (111) and texture-etched - (111)-faceted - surfaces were used. A decrease in minority-carrier surface recombination compared to a bare surface was seen from increased short-wavelength spectral response, increased open-circuit voltage, and reduced dark saturation current, with no degradation of the minority carrier diffusion length.

  3. Argon plasma treatment of silicon nitride (SiN) for improved antireflection coating on c-Si solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Ghosh, Hemanta; Mitra, Suchismita; Saha, Hiranmay; Datta, Swapan Kumar; Banerjee, Chandan, E-mail: chandanbanerjee74@gmail.com

    2017-01-15

    Highlights: • Antireflection properties of argon plasma treated silicon nitride layer and its effect on crystalline silicon solar cell. • The reduction in reflection due to the formation of a silicon oxynitride/silicon nitride double layer. • EQE reveals a relative increase of 2.72% in J{sub sc} and 4.46% in conversion efficiency. - Abstract: Antireflection properties of argon plasma treated silicon nitride layer and its effect on crystalline silicon solar cell is presented here. Hydrogenated silicon nitride (a-SiN:H) layer has been deposited on a silicon substrate by Plasma Enhanced Chemical Vapour Deposition (PECVD) using a mixture of silane (SiH{sub 4}), ammonia (NH{sub 3}) and hydrogen (H{sub 2}) gases followed by a argon plasma treatment. Optical analysis reveals a significant reduction in reflectance after argon plasma treatment of silicon nitride layer. While FESEM shows nanostructures on the surface of the silicon nitride film, FTIR reveals a change in Si−N, Si−O and N−H bonds. On the other hand, ellipsometry shows the variation of refractive index and formation of double layer. Finally, a c-Si solar cell has been fabricated with the said anti-reflection coating. External quantum efficiency reveals a relative increase of 2.72% in the short circuit current density and 4.46% in conversion efficiency over a baseline efficiency of 16.58%.

  4. Hybrid Silicon Nanocone–Polymer Solar Cells

    KAUST Repository

    Jeong, Sangmoo

    2012-06-13

    Recently, hybrid Si/organic solar cells have been studied for low-cost Si photovoltaic devices because the Schottky junction between the Si and organic material can be formed by solution processes at a low temperature. In this study, we demonstrate a hybrid solar cell composed of Si nanocones and conductive polymer. The optimal nanocone structure with an aspect ratio (height/diameter of a nanocone) less than two allowed for conformal polymer surface coverage via spin-coating while also providing both excellent antireflection and light trapping properties. The uniform heterojunction over the nanocones with enhanced light absorption resulted in a power conversion efficiency above 11%. Based on our simulation study, the optimal nanocone structures for a 10 μm thick Si solar cell can achieve a short-circuit current density, up to 39.1 mA/cm 2, which is very close to the theoretical limit. With very thin material and inexpensive processing, hybrid Si nanocone/polymer solar cells are promising as an economically viable alternative energy solution. © 2012 American Chemical Society.

  5. Hybrid Silicon Nanocone–Polymer Solar Cells

    KAUST Repository

    Jeong, Sangmoo; Garnett, Erik C.; Wang, Shuang; Yu, Zongfu; Fan, Shanhui; Brongersma, Mark L.; McGehee, Michael D.; Cui, Yi

    2012-01-01

    Recently, hybrid Si/organic solar cells have been studied for low-cost Si photovoltaic devices because the Schottky junction between the Si and organic material can be formed by solution processes at a low temperature. In this study, we demonstrate a hybrid solar cell composed of Si nanocones and conductive polymer. The optimal nanocone structure with an aspect ratio (height/diameter of a nanocone) less than two allowed for conformal polymer surface coverage via spin-coating while also providing both excellent antireflection and light trapping properties. The uniform heterojunction over the nanocones with enhanced light absorption resulted in a power conversion efficiency above 11%. Based on our simulation study, the optimal nanocone structures for a 10 μm thick Si solar cell can achieve a short-circuit current density, up to 39.1 mA/cm 2, which is very close to the theoretical limit. With very thin material and inexpensive processing, hybrid Si nanocone/polymer solar cells are promising as an economically viable alternative energy solution. © 2012 American Chemical Society.

  6. Amorphous silicon passivation for 23.3% laser processed back contact solar cells

    Science.gov (United States)

    Carstens, Kai; Dahlinger, Morris; Hoffmann, Erik; Zapf-Gottwick, Renate; Werner, Jürgen H.

    2017-08-01

    This paper presents amorphous silicon deposited at temperatures below 200 °C, leading to an excellent passivation layer for boron doped emitter and phosphorus doped back surface field areas in interdigitated back contact solar cells. A higher deposition temperature degrades the passivation of the boron emitter by an increased hydrogen effusion due to lower silicon hydrogen bond energy, proved by hydrogen effusion measurements. The high boron surface doping in crystalline silicon causes a band bending in the amorphous silicon. Under these conditions, at the interface, the intentionally undoped amorphous silicon becomes p-type conducting, with the consequence of an increased dangling bond defect density. For bulk amorphous silicon this effect is described by the defect pool model. We demonstrate, that the defect pool model is also applicable to the interface between amorphous and crystalline silicon. Our simulation shows the shift of the Fermi energy towards the valence band edge to be more pronounced for high temperature deposited amorphous silicon having a small bandgap. Application of optimized amorphous silicon as passivation layer for the boron doped emitter and phosphorus doped back surface field on the rear side of laser processed back contact solar cells, fabricated using four laser processing steps, yields an efficiency of 23.3%.

  7. Nanopatterned Silicon Substrate Use in Heterojunction Thin Film Solar Cells Made by Magnetron Sputtering

    Directory of Open Access Journals (Sweden)

    Shao-Ze Tseng

    2014-01-01

    Full Text Available This paper describes a method for fabricating silicon heterojunction thin film solar cells with an ITO/p-type a-Si : H/n-type c-Si structure by radiofrequency magnetron sputtering. A short-circuit current density and efficiency of 28.80 mA/cm2 and 8.67% were achieved. Novel nanopatterned silicon wafers for use in cells are presented. Improved heterojunction cells are formed on a nanopatterned silicon substrate that is prepared with a self-assembled monolayer of SiO2 nanospheres with a diameter of 550 nm used as an etching mask. The efficiency of the nanopattern silicon substrate heterojunction cells was 31.49% greater than that of heterojunction cells on a flat silicon wafer.

  8. Investigation of Low-Cost Surface Processing Techniques for Large-Size Multicrystalline Silicon Solar Cells

    Directory of Open Access Journals (Sweden)

    Yuang-Tung Cheng

    2010-01-01

    Full Text Available The subject of the present work is to develop a simple and effective method of enhancing conversion efficiency in large-size solar cells using multicrystalline silicon (mc-Si wafer. In this work, industrial-type mc-Si solar cells with area of 125×125 mm2 were acid etched to produce simultaneously POCl3 emitters and silicon nitride deposition by plasma-enhanced chemical vapor deposited (PECVD. The study of surface morphology and reflectivity of different mc-Si etched surfaces has also been discussed in this research. Using our optimal acid etching solution ratio, we are able to fabricate mc-Si solar cells of 16.34% conversion efficiency with double layers silicon nitride (Si3N4 coating. From our experiment, we find that depositing double layers silicon nitride coating on mc-Si solar cells can get the optimal performance parameters. Open circuit (Voc is 616 mV, short circuit current (Jsc is 34.1 mA/cm2, and minority carrier diffusion length is 474.16 μm. The isotropic texturing and silicon nitride layers coating approach contribute to lowering cost and achieving high efficiency in mass production.

  9. Thermodynamic efficiency of solar concentrators.

    Science.gov (United States)

    Shatz, Narkis; Bortz, John; Winston, Roland

    2010-04-26

    The optical thermodynamic efficiency is a comprehensive metric that takes into account all loss mechanisms associated with transferring flux from the source to the target phase space, which may include losses due to inadequate design, non-ideal materials, fabrication errors, and less than maximal concentration. We discuss consequences of Fermat's principle of geometrical optics and review étendue dilution and optical loss mechanisms associated with nonimaging concentrators. We develop an expression for the optical thermodynamic efficiency which combines the first and second laws of thermodynamics. As such, this metric is a gold standard for evaluating the performance of nonimaging concentrators. We provide examples illustrating the use of this new metric for concentrating photovoltaic systems for solar power applications, and in particular show how skewness mismatch limits the attainable optical thermodynamic efficiency.

  10. Advanced dendritic web growth development and development of single-crystal silicon dendritic ribbon and high-efficiency solar cell program

    Science.gov (United States)

    Duncan, C. S.; Seidensticker, R. G.; Mchugh, J. P.; Hopkins, R. H.

    1986-01-01

    Efforts to demonstrate that the dendritic web technology is ready for commercial use by the end of 1986 continues. A commercial readiness goal involves improvements to crystal growth furnace throughput to demonstrate an area growth rate of greater than 15 sq cm/min while simultaneously growing 10 meters or more of ribbon under conditions of continuous melt replenishment. Continuous means that the silicon melt is being replenished at the same rate that it is being consumed by ribbon growth so that the melt level remains constant. Efforts continue on computer thermal modeling required to define high speed, low stress, continuous growth configurations; the study of convective effects in the molten silicon and growth furnace cover gas; on furnace component modifications; on web quality assessments; and on experimental growth activities.

  11. Silicon nitride and intrinsic amorphous silicon double antireflection coatings for thin-film solar cells on foreign substrates

    International Nuclear Information System (INIS)

    Li, Da; Kunz, Thomas; Wolf, Nadine; Liebig, Jan Philipp; Wittmann, Stephan; Ahmad, Taimoor; Hessmann, Maik T.; Auer, Richard; Göken, Mathias; Brabec, Christoph J.

    2015-01-01

    Hydrogenated intrinsic amorphous silicon (a-Si:H) was investigated as a surface passivation method for crystalline silicon thin film solar cells on graphite substrates. The results of the experiments, including quantum efficiency and current density-voltage measurements, show improvements in cell performance. This improvement is due to surface passivation by an a-Si:H(i) layer, which increases the open circuit voltage and the fill factor. In comparison with our previous work, we have achieved an increase of 0.6% absolute cell efficiency for a 40 μm thick 4 cm 2 aperture area on the graphite substrate. The optical properties of the SiN x /a-Si:H(i) stack were studied using spectroscopic ellipsometer techniques. Scanning transmission electron microscopy inside a scanning electron microscope was applied to characterize the cross section of the SiN x /a-Si:H(i) stack using focus ion beam preparation. - Highlights: • We report a 10.8% efficiency for thin-film silicon solar cell on graphite. • Hydrogenated intrinsic amorphous silicon was applied for surface passivation. • SiN x /a-Si:H(i) stacks were characterized by spectroscopic ellipsometer techniques. • Cross-section micrograph was obtained by scanning transmission electron microscopy. • Quantum efficiency and J-V measurements show improvements in the cell performance

  12. Studying of Perovskite Nanoparticles in PMMA Matrix Used As Light Converter for Silicon Solar Cell

    Directory of Open Access Journals (Sweden)

    Lipiński M.

    2017-09-01

    Full Text Available The nanoparticles of CH3NH3PbBr3 hybrid perovskites were synthesized. These perovskite nanoparticles we embedded in polymethyl methacrylate (PMMA in order to obtain the composite, which we used as light converter for silicon solar cells. It was shown that the composite emit the light with the intensity maximum at about 527 nm when exited by a short wavelength (300÷450 nm of light. The silicon solar cells were used to examine the effect of down-conversion (DC process by perovskite nanoparticles embedded in PMMA. For experiments, two groups of monocrystalline silicon solar cells were used. The first one included the solar cells without surface texturization and antireflection coating. The second one included the commercial cells with surface texturization and antireflection coating. In every series of the cells one part of the cells were covered by composite (CH3NH3PbBr3 in PMMA layer and second part of cells by pure PMMA for comparison. It was shown that External Quantum Efficiency EQE of the photovoltaic cells covered by composite (CH3NH3PbBr3 in PMMA layer was improved in both group of the cells but unfortunately the Internal Quantum Efficiency was reduced. This reduction was caused by high absorption of the short wavelength light and reabsorption of the luminescence light. Therefore, the CH3NH3PbBr3 perovskite nanoparticles embedded in PMMA matrix were unable to increase silicon solar cell efficiency in the tested systems.

  13. Electrical properties improvement of multicrystalline silicon solar cells using a combination of porous silicon and vanadium oxide treatment

    International Nuclear Information System (INIS)

    Derbali, L.; Ezzaouia, H.

    2013-01-01

    In this paper, we will report the enhancement of the conversion efficiency of multicrystalline silicon solar cells after coating the front surface with a porous silicon layer treated with vanadium oxide. The incorporation of vanadium oxide into the porous silicon (PS) structure, followed by a thermal treatment under oxygen ambient, leads to an important decrease of the surface reflectivity, a significant enhancement of the effective minority carrier lifetime (τ eff ) and a significant enhancement of the photoluminescence (PL) of the PS structure. We Obtained a noticeable increase of (τ eff ) from 3.11 μs to 134.74 μs and the surface recombination velocity (S eff ) have decreased from 8441 cm s −1 to 195 cm s −1 . The reflectivity spectra of obtained films, performed in the 300–1200 nm wavelength range, show an important decrease of the average reflectivity from 40% to 5%. We notice a significant improvement of the internal quantum efficiency (IQE) in the used multicrystalline silicon substrates. Results are analyzed and compared to those carried out on a reference (untreated) sample. The electrical properties of the treated silicon solar cells were improved noticeably as regard to the reference (untreated) sample.

  14. Impact of temperature on performance of series and parallel connected mono-crystalline silicon solar cells

    Directory of Open Access Journals (Sweden)

    Subhash Chander

    2015-11-01

    Full Text Available This paper presents a study on impact of temperature on the performance of series and parallel connected mono-crystalline silicon (mono-Si solar cell employing solar simulator. The experiment was carried out at constant light intensity 550 W/m2with cell temperature in the range 25–60 oC for single, series and parallel connected mono-Si solar cells. The performance parameters like open circuit voltage, maximum power, fill factor and efficiency are found to decrease with cell temperature while the short circuit current is observed to increase. The experimental results reveal that silicon solar cells connected in series and parallel combinations follow the Kirchhoff’s laws and the temperature has a significant effect on the performance parameters of solar cell.

  15. Modeling and Design of a New Flexible Graphene-on-Silicon Schottky Junction Solar Cell

    Directory of Open Access Journals (Sweden)

    Francesco Dell’Olio

    2016-10-01

    Full Text Available A new graphene-based flexible solar cell with a power conversion efficiency >10% has been designed. The environmental stability and the low complexity of the fabrication process are the two main advantages of the proposed device with respect to other flexible solar cells. The designed solar cell is a graphene/silicon Schottky junction whose performance has been enhanced by a graphene oxide layer deposited on the graphene sheet. The effect of the graphene oxide is to dope the graphene and to act as anti-reflection coating. A silicon dioxide ultrathin layer interposed between the n-Si and the graphene increases the open-circuit voltage of the cell. The solar cell optimization has been achieved through a mathematical model, which has been validated by using experimental data reported in literature. The new flexible photovoltaic device can be integrated in a wide range of microsystems powered by solar energy.

  16. Comparison of Light Trapping in Silicon Nanowire and Surface Textured Thin-Film Solar Cells

    Directory of Open Access Journals (Sweden)

    Rion Parsons

    2017-04-01

    Full Text Available The optics of axial silicon nanowire solar cells is investigated and compared to silicon thin-film solar cells with textured contact layers. The quantum efficiency and short circuit current density are calculated taking a device geometry into account, which can be fabricated by using standard semiconductor processing. The solar cells with textured absorber and textured contact layers provide a gain of short circuit current density of 4.4 mA/cm2 and 6.1 mA/cm2 compared to a solar cell on a flat substrate, respectively. The influence of the device dimensions on the quantum efficiency and short circuit current density will be discussed.

  17. Phosphorus-doped Amorphous Silicon Nitride Films Applied to Crystalline Silicon Solar Cells

    NARCIS (Netherlands)

    Feinäugle, Matthias

    2008-01-01

    The Photovoltaics Group at the Universitat Politècnica de Catalunya is investigating silicon carbide (SiC) for the electronic passivation of the surface of crystalline silicon solar cells. The doping of SiC passivation layers with phosphorus resulted in a clear improvement of the minority carrier

  18. Development of Doped Microcrystalline Silicon Oxide and its Application to Thin‑Film Silicon Solar Cells

    NARCIS (Netherlands)

    Lambertz, A.

    2015-01-01

    The aim of the present study is the development of doped microcrystalline silicon oxide (µc‑SiOx:H) alloys and its application in thin‑film silicon solar cells. The doped µc‑SiOx:H material was prepared from carbon dioxide (CO2), silane (SiH4), hydrogen (H2) gas mixtures using plasma enhanced

  19. Angle resolved characterization of nanostructured and conventionally textured silicon solar cells

    DEFF Research Database (Denmark)

    Davidsen, Rasmus Schmidt; Ormstrup, Jeppe; Ommen, Martin Lind

    2015-01-01

    current, open circuit voltage, fill factor (FF) and power conversion efficiency are each measured as function of the relative incident angle between the solar cell and the light source. The relative incident angle is varied from 0° to 90° in steps of 10° in orthogonal axes, such that each solar cell......We report angle resolved characterization of nanostructured and conventionally textured silicon solar cells. The nanostructured solar cells are realized through a single step, mask-less, scalable reactive ion etching (RIE) texturing of the surface. Photovoltaic properties including short circuit...

  20. Geometric photovoltaics applied to amorphous silicon thin film solar cells

    Science.gov (United States)

    Kirkpatrick, Timothy

    Geometrically generalized analytical expressions for device transport are derived from first principles for a photovoltaic junction. Subsequently, conventional planar and unconventional coaxial and hemispherical photovoltaic architectures are applied to detail the device physics of the junction based on their respective geometry. For the conventional planar cell, the one-dimensional transport equations governing carrier dynamics are recovered. For the unconventional coaxial and hemispherical junction designs, new multi-dimensional transport equations are revealed. Physical effects such as carrier generation and recombination are compared for each cell architecture, providing insight as to how non-planar junctions may potentially enable greater energy conversion efficiencies. Numerical simulations are performed for arrays of vertically aligned, nanostructured coaxial and hemispherical amorphous silicon solar cells and results are compared to those from simulations performed for the standard planar junction. Results indicate that fundamental physical changes in the spatial dependence of the energy band profile across the intrinsic region of an amorphous silicon p-i-n junction manifest as an increase in recombination current for non-planar photovoltaic architectures. Despite an increase in recombination current, however, the coaxial architecture still appears to be able to surpass the efficiency predicted for the planar geometry, due to the geometry of the junction leading to a decoupling of optics and electronics.

  1. Photonic intermediate layer for silicon tandem solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Bielawny, Andreas; Miclea, Paul-Tiberiu; Wehrspohn, Ralf [Martin-Luther Universitaet Halle-Wittenberg (Germany). Inst. fuer Physik, Mikro-MD; Lee, Seuong-Mo; Knez, Mato [Max-Planck-Inst. fuer Mikrostrukturphysik, Halle (Germany); Carius, Reinhard [Forschungszentrum Juelich (DE). Inst. fuer Photovoltaik (IEF-5); Lisca, Marian; Rockstuhl, Carsten; Lederer, Falk [Universitaet Jena (Germany). Dept. Physik

    2008-07-01

    The concept of incorporation of a 3D photonic crystal as diffractive spectral filter within a-Si/mc-Si tandem solar cells has been investigated as a promising application. Our intermediate reflective filter enhances the pathway of spectrally selected light within an amorphous silicon top cell in its spectral region of low absorption. From our previous work, we expect a significant improvement of the tandem's efficiency of about 1.2%(absolute). This increases efficiency for a typical silicon tandem cell from 11.2% to 12.4%, as a result of the optical current-matching of the two junctions. Our wavelength-selective optical element is a 3D-structured optical thin-film - prepared by self-organized artificial opal templates and finalized with atomic layer deposition techniques. The resulting samples are highly periodical thin-film inverted opals made of zinc-oxide. We compare recent experimental data on the optical properties with our simulations and photonic bandstructure calculations.

  2. Microstructure and Mechanical Aspects of Multicrystalline Silicon Solar Cells

    NARCIS (Netherlands)

    Popovich, V.A.

    2013-01-01

    Due to pressure from the photovoltaic industry to decrease the cost of solar cell production, there is a tendency to reduce the thickness of silicon wafers. Unfortunately, wafers contain defects created by the various processing steps involved in solar cell production, which significantly reduce the

  3. Transparent conductive oxides for thin-film silicon solar cells

    NARCIS (Netherlands)

    Löffler, J.

    2005-01-01

    This thesis describes research on thin-film silicon solar cells with focus on the transparent conductive oxide (TCO) for such devices. In addition to the formation of a transparent and electrically conductive front electrode for the solar cell allowing photocurrent collection with low ohmic losses,

  4. Silicon solar cells made by ion implantation and glow discharge

    International Nuclear Information System (INIS)

    Ponpon, J.P.; Siffert, P.

    1975-01-01

    Three different methods of silicon solar cell preparation are considered and investigated: low energy implantation, glow discharge and prebombarded Schottky barriers. The properties of the contact layers realized by these processes are compared in terms of junction depth and sheet resistance. Preliminary results show the usefulness of these techniques for terrestrial solar cell realization [fr

  5. Silver Nanoparticle Enhanced Freestanding Thin-Film Silicon Solar Cells

    Science.gov (United States)

    Winans, Joshua David

    As the supply of fossil fuels diminishes in quantity the demand for alternative energy sources will consistently increase. Solar cells are an environmentally friendly and proven technology that suffer in sales due to a large upfront cost. In order to help facilitate the transition from fossil fuels to photovoltaics, module costs must be reduced to prices well below $1/Watt. Thin-film solar cells are more affordable because of the reduced materials costs, but lower in efficiency because less light is absorbed before passing through the cell. Silver nanoparticles placed at the front surface of the solar cell absorb and reradiate the energy of the light in ways such that more of the light ends being captured by the silicon. Silver nanoparticles can do this because they have free electron clouds that can take on the energy of an incident photon through collective action. This bulk action of the electrons is called a plasmon. This work begins by discussing the economics driving the need for reduced material use, and the pros and cons of taking this step. Next, the fundamental theory of light-matter interaction is briefly described followed by an introduction to the study of plasmonics. Following that we discuss a traditional method of silver nanoparticle formation and the initial experimental studies of their effects on the ability of thin-film silicon to absorb light. Then, Finite-Difference Time-Domain simulation software is used to simulate the effects of nanoparticle morphology and size on the scattering of light at the surface of the thin-film.

  6. Evolutionary process development towards next generation crystalline silicon solar cells : a semiconductor process toolbox application

    Directory of Open Access Journals (Sweden)

    Tous L.

    2012-08-01

    Full Text Available Bulk crystalline Silicon solar cells are covering more than 85% of the world’s roof top module installation in 2010. With a growth rate of over 30% in the last 10 years this technology remains the working horse of solar cell industry. The full Aluminum back-side field (Al BSF technology has been developed in the 90’s and provides a production learning curve on module price of constant 20% in average. The main reason for the decrease of module prices with increasing production capacity is due to the effect of up scaling industrial production. For further decreasing of the price per wattpeak silicon consumption has to be reduced and efficiency has to be improved. In this paper we describe a successive efficiency improving process development starting from the existing full Al BSF cell concept. We propose an evolutionary development includes all parts of the solar cell process: optical enhancement (texturing, polishing, anti-reflection coating, junction formation and contacting. Novel processes are benchmarked on industrial like baseline flows using high-efficiency cell concepts like i-PERC (Passivated Emitter and Rear Cell. While the full Al BSF crystalline silicon solar cell technology provides efficiencies of up to 18% (on cz-Si in production, we are achieving up to 19.4% conversion efficiency for industrial fabricated, large area solar cells with copper based front side metallization and local Al BSF applying the semiconductor toolbox.

  7. Boron profiles in doped amorphous-silicon solar cells formed by plasma ion deposition

    International Nuclear Information System (INIS)

    Stoddart, C.T.H.; Hunt, C.P.; Coleman, J.H.

    1979-01-01

    Amorphous silicon p-n junction solar cells of large area (100 cm 2 ) and having a quantum efficiency approaching 100% in the blue region have been prepared by plasma ion-plating, the p layer being formed from diborane and silane gases in a cathode glow-discharge. Surface secondary ion mass spectrometry combined with ion beam etching was found to be a very sensitive method with high in-depth resolution for obtaining the initial boron-silicon profile of the solar cell p-n junction. (author)

  8. Investigation of Low-Cost Surface Processing Techniques for Large-Size Multicrystalline Silicon Solar Cells

    OpenAIRE

    Cheng, Yuang-Tung; Ho, Jyh-Jier; Lee, William J.; Tsai, Song-Yeu; Lu, Yung-An; Liou, Jia-Jhe; Chang, Shun-Hsyung; Wang, Kang L.

    2010-01-01

    The subject of the present work is to develop a simple and effective method of enhancing conversion efficiency in large-size solar cells using multicrystalline silicon (mc-Si) wafer. In this work, industrial-type mc-Si solar cells with area of 125×125 mm2 were acid etched to produce simultaneously POCl3 emitters and silicon nitride deposition by plasma-enhanced chemical vapor deposited (PECVD). The study of surface morphology and reflectivity of different mc-Si etched surfaces has also been d...

  9. Influence of ion bombardment on microcrystalline silicon material quality and solar cell performances

    OpenAIRE

    Bugnon, G; Feltrin, A; Sculati-Meillaud, F; Bailat, J; Ballif, C

    2008-01-01

    Microcrystalline hydrogenated silicon growth with VHF-PECVD was examined in an industrial type parallel plate KAITM reactor. The influence of pressure on material quality was studied in single junction solar cells. Solar cells with their intrinsic layer prepared at higher pressures exhibit remarkable improvements, reaching 8.2% efficiency at 3.5 mbar. Further analyzes showed that μc- Si:H intrinsic layers grown at higher pressures have a significantly lower defect density. These results are a...

  10. Transmission Electron Microscopy Studies of Electron-Selective Titanium Oxide Contacts in Silicon Solar Cells

    KAUST Repository

    Ali, Haider; Yang, Xinbo; Weber, Klaus; Schoenfeld, Winston V.; Davis, Kristopher O.

    2017-01-01

    In this study, the cross-section of electron-selective titanium oxide (TiO2) contacts for n-type crystalline silicon solar cells were investigated by transmission electron microscopy. It was revealed that the excellent cell efficiency of 21

  11. Plasma deposition of microcrystalline silicon solar cells. Looking beyond the glass

    Energy Technology Data Exchange (ETDEWEB)

    Donker, M.N. van den

    2006-07-01

    Microcrystalline silicon emerged in the past decade as highly interesting material for application in efficient and stable thin film silicon solar cells. It consists of nanometer-sized crystallites embedded in a micrometer-sized columnar structure, which gradually evolves during the SiH{sub 4} based deposition process starting from an amorphous incubation layer. Understanding of and control over this transient and multi-scale growth process is essential in the route towards low-cost microcrystalline silicon solar cells. This thesis presents an experimental study on the technologically relevant high rate (5-10 Aa s{sup -1}) parallel plate plasma deposition process of state-of-the-art microcrystalline silicon solar cells. The objective of the work was to explore and understand the physical limits of the plasma deposition process as well as to develop diagnostics suitable for process control in eventual solar cell production. Among the developed non-invasive process diagnostics were a pyrometer, an optical spectrometer, a mass spectrometer and a voltage probe. Complete thin film silicon solar cells and modules were deposited and characterized. (orig.)

  12. Nano-Photonic Structures for Light Trapping in Ultra-Thin Crystalline Silicon Solar Cells

    Directory of Open Access Journals (Sweden)

    Prathap Pathi

    2017-01-01

    Full Text Available Thick wafer-silicon is the dominant solar cell technology. It is of great interest to develop ultra-thin solar cells that can reduce materials usage, but still achieve acceptable performance and high solar absorption. Accordingly, we developed a highly absorbing ultra-thin crystalline Si based solar cell architecture using periodically patterned front and rear dielectric nanocone arrays which provide enhanced light trapping. The rear nanocones are embedded in a silver back reflector. In contrast to previous approaches, we utilize dielectric photonic crystals with a completely flat silicon absorber layer, providing expected high electronic quality and low carrier recombination. This architecture creates a dense mesh of wave-guided modes at near-infrared wavelengths in the absorber layer, generating enhanced absorption. For thin silicon (<2 μm and 750 nm pitch arrays, scattering matrix simulations predict enhancements exceeding 90%. Absorption approaches the Lambertian limit at small thicknesses (<10 μm and is slightly lower (by ~5% at wafer-scale thicknesses. Parasitic losses are ~25% for ultra-thin (2 μm silicon and just 1%–2% for thicker (>100 μm cells. There is potential for 20 μm thick cells to provide 30 mA/cm2 photo-current and >20% efficiency. This architecture has great promise for ultra-thin silicon solar panels with reduced material utilization and enhanced light-trapping.

  13. Proton irradiation effects of amorphous silicon solar cell for solar power satellite

    Energy Technology Data Exchange (ETDEWEB)

    Morita, Yousuke; Oshima, Takeshi [Japan Atomic Energy Research Inst., Takasaki, Gunma (Japan). Takasaki Radiation Chemistry Research Establishment; Sasaki, Susumu; Kuroda, Hideo; Ushirokawa, Akio

    1997-03-01

    Flexible amorphous silicon(fa-Si) solar cell module, a thin film type, is regarded as a realistic power generator for solar power satellite. The radiation resistance of fa-Si cells was investigated by the irradiations of 3,4 and 10 MeV protons. The hydrogen gas treatment of the irradiated fa-Si cells was also studied. The fa-Si cell shows high radiation resistance for proton irradiations, compared with a crystalline silicon solar cell. (author)

  14. Review of the Potential of the Ni/Cu Plating Technique for Crystalline Silicon Solar Cells

    Directory of Open Access Journals (Sweden)

    Atteq ur Rehman

    2014-02-01

    Full Text Available Developing a better method for the metallization of silicon solar cells is integral part of realizing superior efficiency. Currently, contact realization using screen printing is the leading technology in the silicon based photovoltaic industry, as it is simple and fast. However, the problem with metallization of this kind is that it has a lower aspect ratio and higher contact resistance, which limits solar cell efficiency. The mounting cost of silver pastes and decreasing silicon wafer thicknesses encourages silicon solar cell manufacturers to develop fresh metallization techniques involving a lower quantity of silver usage and not relying pressing process of screen printing. In recent times nickel/copper (Ni/Cu based metal plating has emerged as a metallization method that may solve these issues. This paper offers a detailed review and understanding of a Ni/Cu based plating technique for silicon solar cells. The formation of a Ni seed layer by adopting various deposition techniques and a Cu conducting layer using a light induced plating (LIP process are appraised. Unlike screen-printed metallization, a step involving patterning is crucial for opening the masking layer. Consequently, experimental procedures involving patterning methods are also explicated. Lastly, the issues of adhesion, back ground plating, process complexity and reliability for industrial applications are also addressed.

  15. Development of Solar Grade (SoG) Silicon

    Energy Technology Data Exchange (ETDEWEB)

    Joyce, David B; Schmid, Frederick

    2008-01-18

    The rapid growth of the photovoltaics (PV) industry is threatened by the ongoing shortage of suitable solar grade (SoG) silicon. Until 2004, the PV industry relied on the off spec polysilicon from the electronics industry for feedstock. The rapid growth of PV meant that the demand for SoG silicon predictably surpassed this supply. The long-term prospects for PV are very bright as costs have come down, and efficiencies and economies of scale make PV generated electricity ever more competitive with grid electricity. However, the scalability of the current process for producing poly silicon again threatens the future. A less costly, higher volume production technique is needed to supply the long-term growth of the PV industry, and to reduce costs of PV even further. This long-term need was the motivation behind this SBIR proposal. Upgrading metallurgical grade (MG) silicon would fulfill the need for a low-cost, large-scale production. Past attempts to upgrade MG silicon have foundered/failed/had trouble reducing the low segregation coefficient elements, B, P, and Al. Most other elements in MG silicon can be purified very efficiently by directional solidification. Thus, in the Phase I program, Crystal Systems proposed a variety of techniques to reduce B, P, and Al in MG silicon to produce a low cost commercial technique for upgrading MG silicon. Of the variety of techniques tried, vacuum refining and some slagging and additions turned out to be the most promising. These were pursued in the Phase II study. By vacuum refining, the P was reduced from 14 to 0.22 ppmw and the Al was reduced from 370 ppmw to 0.065 ppmw. This process was scaled to 40 kg scale charges, and the results were expressed in terms of half-life, or time to reduce the impurity concentration in half. Best half-lives were 2 hours, typical were 4 hours. Scaling factors were developed to allow prediction of these results to larger scale melts. The vacuum refining required the development of new crucibles

  16. Ab initio design of nanostructures for solar energy conversion: a case study on silicon nitride nanowire.

    Science.gov (United States)

    Pan, Hui

    2014-01-01

    Design of novel materials for efficient solar energy conversion is critical to the development of green energy technology. In this work, we present a first-principles study on the design of nanostructures for solar energy harvesting on the basis of the density functional theory. We show that the indirect band structure of bulk silicon nitride is transferred to direct bandgap in nanowire. We find that intermediate bands can be created by doping, leading to enhancement of sunlight absorption. We further show that codoping not only reduces the bandgap and introduces intermediate bands but also enhances the solubility of dopants in silicon nitride nanowires due to reduced formation energy of substitution. Importantly, the codoped nanowire is ferromagnetic, leading to the improvement of carrier mobility. The silicon nitride nanowires with direct bandgap, intermediate bands, and ferromagnetism may be applicable to solar energy harvesting.

  17. Efficiency of solar radiation conversion in photovoltaic panels

    Directory of Open Access Journals (Sweden)

    Kurpaska Sławomir

    2018-01-01

    Full Text Available This paper included analysis the conversion efficiency in photovoltaic panels. The tests were done between February and June at a test stand equipped with three commonly used types of photovoltaic panels: poly- and monocrystalline silicon and with semi-conductive layer made of copper (Cu, indium (In, gallium (Ga and selenium (Se (CIGS. Five days of each month were selected for a detailed analysis. They were close to the so-called recommended day for calculations in solar power engineering. Efficiency, calculated as the yield of electrical energy in relation to solar radiation energy reaching the panels was made conditional upon solar radiation intensity and ambient temperature. It was found that as solar radiation intensity and ambient temperature increase, the efficiency of solar radiation conversion into electricity is reduced. Correlation dependence was determined for the test data obtained, describing temperature change of panels depending on climatic conditions. It was found that as panel temperature increases, the conversion efficiency is reduced. Within the tested scope of experiment conditions, the efficiency was reduced in the range between 20.1 and 22.8%. The authors also determined the average efficiency values in individual test months together with average ambient conditions of the environment where the process of solar radiation conversion took place.

  18. Study on the fabrication of silicon nanoparticles in an amorphous silicon light absorbing layer for solar cell applications

    International Nuclear Information System (INIS)

    Park, Joo Hyung; Song, Jin Soo; Lee, Jae Hee; Lee, Jeong Chul

    2012-01-01

    Hydrogenated amorphous-silicon (a-Si:H) thin-film solar cells have advantages of relatively simple technology, less material consumption, higher absorption ratio compared to crystalline silicon, and low cost due to the use of cheaper substrates rather than silicon wafers. However, together with those advantages, amorphous-silicon thin-film solar cells face several issues such as a relatively lower efficiency, a relatively wider bandgap, and the Staebler-Wronski effect (SWE) compared to other competing materials (i.e., crystalline silicon, CdTe, Cu(In x Ga (1-x) )Se 2 (CIGS), etc.). As a remedy for those drawbacks and a way to enhance the cell conversion efficiency at the same time, the employment of crystalline silicon nanoparticles (Si-NPs) in the a-Si matrix is proposed to organize the quantum-dot (QD) structure as the light-absorbing layer. This structure of the light absorbing layer consists of single-crystal Si-NPs in an a-Si:H thin-film matrix. The single-crystal Si-NPs are synthesized by using SiH 4 gas decomposition with CO 2 laser pyrolysis, and the sizes of Si-NPs are calibrated to control their bandgaps. The synthesized size-controlled Si-NPs are directly transferred to another chamber to form a QD structure by using co-deposition of the Si-NPs and the a-Si:H matrix. Transmission electron microscopy (TEM) analyses are employed to verify the sizes and the crystalline properties of the Si-NPs alone and of the Si-NPs in the a-Si:H matrix. The TEM results show successful co-deposition of size-controlled Si-NPs in the a-Si:H matrix, which is meaningful because it suggests the possibility of further enhancement of the a-Si:H solar-cell structure and of tandem structure applications by using a single element.

  19. Effect of Silicon Nanowire on Crystalline Silicon Solar Cell Characteristics

    OpenAIRE

    Zahra Ostadmahmoodi Do; Tahereh Fanaei Sheikholeslami; Hassan Azarkish

    2016-01-01

    Nanowires (NWs) are recently used in several sensor or actuator devices to improve their ordered characteristics. Silicon nanowire (Si NW) is one of the most attractive one-dimensional nanostructures semiconductors because of its unique electrical and optical properties. In this paper, silicon nanowire (Si NW), is synthesized and characterized for application in photovoltaic device. Si NWs are prepared using wet chemical etching method which is commonly used as a simple and low cost method fo...

  20. Thin Single Crystal Silicon Solar Cells on Ceramic Substrates: November 2009 - November 2010

    Energy Technology Data Exchange (ETDEWEB)

    Kumar, A.; Ravi, K. V.

    2011-06-01

    In this program we have been developing a technology for fabricating thin (< 50 micrometres) single crystal silicon wafers on foreign substrates. We reverse the conventional approach of depositing or forming silicon on foreign substrates by depositing or forming thick (200 to 400 micrometres) ceramic materials on high quality single crystal silicon films ~ 50 micrometres thick. Our key innovation is the fabrication of thin, refractory, and self-adhering 'handling layers or substrates' on thin epitaxial silicon films in-situ, from powder precursors obtained from low cost raw materials. This 'handling layer' has sufficient strength for device and module processing and fabrication. Successful production of full sized (125 mm X 125 mm) silicon on ceramic wafers with 50 micrometre thick single crystal silicon has been achieved and device process flow developed for solar cell fabrication. Impurity transfer from the ceramic to the silicon during the elevated temperature consolidation process has resulted in very low minority carrier lifetimes and resulting low cell efficiencies. Detailed analysis of minority carrier lifetime, metals analysis and device characterization have been done. A full sized solar cell efficiency of 8% has been demonstrated.

  1. Silicon materials task of the Low Cost Solar Array Project: Effect of impurities and processing on silicon solar cells

    Science.gov (United States)

    Hopkins, R. H.; Davis, J. R.; Rohatgi, A.; Hanes, M. H.; Rai-Choudhury, P.; Mollenkopf, H. C.

    1982-01-01

    The effects of impurities and processing on the characteristics of silicon and terrestrial silicon solar cells were defined in order to develop cost benefit relationships for the use of cheaper, less pure solar grades of silicon. The amount of concentrations of commonly encountered impurities that can be tolerated in typical p or n base solar cells was established, then a preliminary analytical model from which the cell performance could be projected depending on the kinds and amounts of contaminants in the silicon base material was developed. The impurity data base was expanded to include construction materials, and the impurity performace model was refined to account for additional effects such as base resistivity, grain boundary interactions, thermal processing, synergic behavior, and nonuniform impurity distributions. A preliminary assessment of long term (aging) behavior of impurities was also undertaken.

  2. Simple processing of back-contacted silicon heterojunction solar cells using selective-area crystalline growth

    KAUST Repository

    Tomasi, Andrea; Paviet-Salomon, Bertrand; Jeangros, Quentin; Haschke, Jan; Christmann, Gabriel; Barraud, Loris; Descoeudres, Antoine; Seif, Johannes Peter; Nicolay, Sylvain; Despeisse, Matthieu; De Wolf, Stefaan; Ballif, Christophe

    2017-01-01

    For crystalline-silicon solar cells, voltages close to the theoretical limit are nowadays readily achievable when using passivating contacts. Conversely, maximal current generation requires the integration of the electron and hole contacts at the back of the solar cell to liberate its front from any shadowing loss. Recently, the world-record efficiency for crystalline-silicon single-junction solar cells was achieved by merging these two approaches in a single device; however, the complexity of fabricating this class of devices raises concerns about their commercial potential. Here we show a contacting method that substantially simplifies the architecture and fabrication of back-contacted silicon solar cells. We exploit the surface-dependent growth of silicon thin films, deposited by plasma processes, to eliminate the patterning of one of the doped carrier-collecting layers. Then, using only one alignment step for electrode definition, we fabricate a proof-of-concept 9-cm2 tunnel-interdigitated back-contact solar cell with a certified conversion efficiency >22.5%.

  3. Simple processing of back-contacted silicon heterojunction solar cells using selective-area crystalline growth

    KAUST Repository

    Tomasi, Andrea

    2017-04-24

    For crystalline-silicon solar cells, voltages close to the theoretical limit are nowadays readily achievable when using passivating contacts. Conversely, maximal current generation requires the integration of the electron and hole contacts at the back of the solar cell to liberate its front from any shadowing loss. Recently, the world-record efficiency for crystalline-silicon single-junction solar cells was achieved by merging these two approaches in a single device; however, the complexity of fabricating this class of devices raises concerns about their commercial potential. Here we show a contacting method that substantially simplifies the architecture and fabrication of back-contacted silicon solar cells. We exploit the surface-dependent growth of silicon thin films, deposited by plasma processes, to eliminate the patterning of one of the doped carrier-collecting layers. Then, using only one alignment step for electrode definition, we fabricate a proof-of-concept 9-cm2 tunnel-interdigitated back-contact solar cell with a certified conversion efficiency >22.5%.

  4. Synergistically Enhanced Performance of Ultrathin Nanostructured Silicon Solar Cells Embedded in Plasmonically Assisted, Multispectral Luminescent Waveguides

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Sung-Min; Dhar, Purnim; Chen, Huandong; Montenegro, Angelo; Liaw, Lauren; Kang, Dongseok; Gai, Boju; Benderskii, Alexander V.; Yoon, Jongseung

    2017-04-12

    Ultrathin silicon solar cells fabricated by anisotropic wet chemical etching of single-crystalline wafer materials represent an attractive materials platform that could provide many advantages for realizing high-performance, low-cost photovoltaics. However, their intrinsically limited photovoltaic performance arising from insufficient absorption of low-energy photons demands careful design of light management to maximize the efficiency and preserve the cost-effectiveness of solar cells. Herein we present an integrated flexible solar module of ultrathin, nanostructured silicon solar cells capable of simultaneously exploiting spectral upconversion and downshifting in conjunction with multispectral luminescent waveguides and a nanostructured plasmonic reflector to compensate for their weak optical absorption and enhance their performance. The 8 μm-thick silicon solar cells incorporating a hexagonally periodic nanostructured surface relief are surface-embedded in layered multispectral luminescent media containing organic dyes and NaYF4:Yb3+,Er3+ nanocrystals as downshifting and upconverting luminophores, respectively, via printing-enabled deterministic materials assembly. The ultrathin nanostructured silicon microcells in the composite luminescent waveguide exhibit strongly augmented photocurrent (~40.1 mA/cm2) and energy conversion efficiency (~12.8%) than devices with only a single type of luminescent species, owing to the synergistic contributions from optical downshifting, plasmonically enhanced upconversion, and waveguided photon flux for optical concentration, where the short-circuit current density increased by ~13.6 mA/cm2 compared with microcells in a nonluminescent medium on a plain silver reflector under a confined illumination.

  5. Hot wire deposited hydrogenated amorphous silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Mahan, A.H.; Iwaniczko, E.; Nelson, B.P.; Reedy, R.C. Jr.; Crandall, R.S. [National Renewable Energy Lab., Golden, CO (United States)

    1996-05-01

    This paper details the results of a study in which low H content, high deposition rate hot wire (HW) deposited amorphous silicon (a-Si:H) has been incorporated into a substrate solar cell. The authors find that the treatment of the top surface of the HW i layer while it is being cooled from its high deposition temperature is crucial to device performance. They present data concerning these surface treatments, and correlate these treatments with Schottky device performance. The authors also present first generation HW n-i-p solar cell efficiency data, where a glow discharge (GD) {mu}c-Si(p) layer was added to complete the partial devices. No light trapping layer was used to increase the device Jsc. Their preliminary investigations have yielded efficiencies of up to 6.8% for a cell with a 4000 {Angstrom} thick HW i-layer, which degrade less than 10% after a 900 hour light soak. The authors suggest avenues for further improvement of their devices.

  6. Silicon solar cell performance deposited by diamond like carbon thin film ;Atomic oxygen effects;

    Science.gov (United States)

    Aghaei, Abbas Ail; Eshaghi, Akbar; Karami, Esmaeil

    2017-09-01

    In this research, a diamond-like carbon thin film was deposited on p-type polycrystalline silicon solar cell via plasma-enhanced chemical vapor deposition method by using methane and hydrogen gases. The effect of atomic oxygen on the functioning of silicon coated DLC thin film and silicon was investigated. Raman spectroscopy, field emission scanning electron microscopy, atomic force microscopy and attenuated total reflection-Fourier transform infrared spectroscopy were used to characterize the structure and morphology of the DLC thin film. Photocurrent-voltage characteristics of the silicon solar cell were carried out using a solar simulator. The results showed that atomic oxygen exposure induced the including oxidation, structural changes, cross-linking reactions and bond breaking of the DLC film; thus reducing the optical properties. The photocurrent-voltage characteristics showed that although the properties of the fabricated thin film were decreased after being exposed to destructive rays, when compared with solar cell without any coating, it could protect it in atomic oxygen condition enhancing solar cell efficiency up to 12%. Thus, it can be said that diamond-like carbon thin layer protect the solar cell against atomic oxygen exposure.

  7. Crystalline silicon thin film growth by ECR plasma CVD for solar cells

    International Nuclear Information System (INIS)

    Licai Wang

    1999-07-01

    This thesis describes the background, motivation and work carried out towards this PhD programme entitled 'Crystalline Silicon Thin Film Growth by ECR Plasma CVD for Solar Cells'. The fundamental principles of silicon solar cells are introduced with a review of silicon thin film and bulk solar cells. The development and prospects for thin film silicon solar cells are described. Some results of a modelling study on thin film single crystalline solar cells are given which has been carried out using a commercially available solar cell simulation package (PC-1D). This is followed by a description of thin film deposition techniques. These include Chemical Vapour Deposition (CVD) and Plasma-Assisted CVD (PACVD). The basic theory and technology of the emerging technique of Electron Cyclotron Resonance (ECR) PACVD, which was used in this research, are introduced and the potential advantages summarised. Some of the basic methods of material and cell characterisation are briefly described, together with the work carried out in this research. The growth by ECR PACVD at temperatures 2 illumination. The best efficiency in the ECR grown structures was 13.76% using an epitaxial emitter. Cell performance was analysed in detail and the factors controlling performance identified by fitting self-consistently the fight and dark current-voltage and spectral response data using PC-1D. Finally, the conclusions for this research and suggestions for further work are outlined. (author)

  8. Serially Connected Micro Amorphous Silicon Solar Cells for Compact High-Voltage Sources

    Directory of Open Access Journals (Sweden)

    Jiyoon Nam

    2016-01-01

    Full Text Available We demonstrate a compact amorphous silicon (a-Si solar module to be used as high-voltage power supply. In comparison with the organic solar module, the main advantages of the a-Si solar module are its compatibility with photolithography techniques and relatively high power conversion efficiency. The open circuit voltage of a-Si solar cells can be easily controlled by serially interconnecting a-Si solar cells. Moreover, the a-Si solar module can be easily patterned by photolithography in any desired shapes with high areal densities. Using the photolithographic technique, we fabricate a compact a-Si solar module with noticeable photovoltaic characteristics as compared with the reported values for high-voltage power supplies.

  9. Efficiency of solar radiation conversion in photovoltaic panels

    OpenAIRE

    Kurpaska Sławomir; Knaga Jarosław; Latała Hubert; Sikora Jakub; Tomczyk Wiesław

    2018-01-01

    This paper included analysis the conversion efficiency in photovoltaic panels. The tests were done between February and June at a test stand equipped with three commonly used types of photovoltaic panels: poly- and monocrystalline silicon and with semi-conductive layer made of copper (Cu), indium (In), gallium (Ga) and selenium (Se) (CIGS). Five days of each month were selected for a detailed analysis. They were close to the so-called recommended day for calculations in solar power engineerin...

  10. Flat-plate solar array project. Volume 2: Silicon material

    Science.gov (United States)

    Lutwack, R.

    1986-10-01

    The goal of the Silicon Material Task, a part of the Flat Plate Solar Array (FSA) Project, was to develop and demonstate the technology for the low cost production of silicon of suitable purity to be used as the basic material for the manufacture of terrestrial photovoltaic solar cells. Summarized are 11 different processes for the production of silicon that were investigated and developed to varying extent by industrial, university, and Government researchers. The silane production section of the Union Carbide Corp. (UCC) silane process was developed completely in this program. Coupled with Siemens-type chemical vapor deposition reactors, the process was carried through the pilot stage. The overall UCC process involves the conversion of metallurgical-grade silicon to silane followed by decomposition of the silane to purified silicon. The other process developments are described to varying extents. Studies are reported on the effects of impurities in silicon on both silicon-material properties and on solar cell performance. These studies on the effects of impurities yielded extensive information and models for relating specific elemental concentrations to levels of deleterious effects.

  11. Flat-plate solar array project. Volume 2: Silicon material

    Science.gov (United States)

    Lutwack, R.

    1986-01-01

    The goal of the Silicon Material Task, a part of the Flat Plate Solar Array (FSA) Project, was to develop and demonstate the technology for the low cost production of silicon of suitable purity to be used as the basic material for the manufacture of terrestrial photovoltaic solar cells. Summarized are 11 different processes for the production of silicon that were investigated and developed to varying extent by industrial, university, and Government researchers. The silane production section of the Union Carbide Corp. (UCC) silane process was developed completely in this program. Coupled with Siemens-type chemical vapor deposition reactors, the process was carried through the pilot stage. The overall UCC process involves the conversion of metallurgical-grade silicon to silane followed by decomposition of the silane to purified silicon. The other process developments are described to varying extents. Studies are reported on the effects of impurities in silicon on both silicon-material properties and on solar cell performance. These studies on the effects of impurities yielded extensive information and models for relating specific elemental concentrations to levels of deleterious effects.

  12. Probing Photocurrent Nonuniformities in the Subcells of Monolithic Perovskite/Silicon Tandem Solar Cells

    KAUST Repository

    Song, Zhaoning

    2016-11-23

    Perovskite/silicon tandem solar cells with high power conversion efficiencies have the potential to become a commercially viable photovoltaic option in the near future. However, device design and optimization is challenging because conventional characterization methods do not give clear feedback on the localized chemical and physical factors that limit performance within individual subcells, especially when stability and degradation is a concern. In this study, we use light beam induced current (LBIC) to probe photocurrent collection nonuniformities in the individual subcells of perovskite/silicon tandems. The choices of lasers and light biasing conditions allow efficiency-limiting effects relating to processing defects, optical interference within the individual cells, and the evolution of water-induced device degradation to be spatially resolved. The results reveal several types of microscopic defects and demonstrate that eliminating these and managing the optical properties within the multilayer structures will be important for future optimization of perovskite/silicon tandem solar cells.

  13. High efficiency, long life terrestrial solar panel

    Science.gov (United States)

    Chao, T.; Khemthong, S.; Ling, R.; Olah, S.

    1977-01-01

    The design of a high efficiency, long life terrestrial module was completed. It utilized 256 rectangular, high efficiency solar cells to achieve high packing density and electrical output. Tooling for the fabrication of solar cells was in house and evaluation of the cell performance was begun. Based on the power output analysis, the goal of a 13% efficiency module was achievable.

  14. Study of an Amorphous Silicon Oxide Buffer Layer for p-Type Microcrystalline Silicon Oxide/n-Type Crystalline Silicon Heterojunction Solar Cells and Their Temperature Dependence

    Directory of Open Access Journals (Sweden)

    Taweewat Krajangsang

    2014-01-01

    Full Text Available Intrinsic hydrogenated amorphous silicon oxide (i-a-SiO:H films were used as front and rear buffer layers in crystalline silicon heterojunction (c-Si-HJ solar cells. The surface passivity and effective lifetime of these i-a-SiO:H films on an n-type silicon wafer were improved by increasing the CO2/SiH4 ratios in the films. Using i-a-SiO:H as the front and rear buffer layers in c-Si-HJ solar cells was investigated. The front i-a-SiO:H buffer layer thickness and the CO2/SiH4 ratio influenced the open-circuit voltage (Voc, fill factor (FF, and temperature coefficient (TC of the c-Si-HJ solar cells. The highest total area efficiency obtained was 18.5% (Voc=700 mV, Jsc=33.5 mA/cm2, and FF=0.79. The TC normalized for this c-Si-HJ solar cell efficiency was −0.301%/°C.

  15. Silicon Solar Cell Efficiency Improvement Employing the Photoluminescent, Down-Shifting Effects of Carbon and CdTe Quantum Dots (Open Access Publisher’s Version)

    Science.gov (United States)

    2016-03-21

    Universidad de Guadalajara, Blvd. Gral. Marcelino Garcı́a Barragán 1421, Olı́mpica, 44430 Guadalajara, Jal., México 3 Departamento de Fı́sica... Universidad de Sonora, Hermosillo, Sonora, Mexico 123 Mater Renew Sustain Energy (2016) 5:5 DOI 10.1007/s40243-016-0070-4 of these nano structures, their...descendente basado en puntos cuánticos de telururo de cadmio aplicado a celdas solares de silicio cristalino. Dissertation, Universidad de

  16. Resistivity and thickness effects in dendritic web silicon solar cells

    Science.gov (United States)

    Meier, D. L.; Hwang, J. M.; Greggi, J.; Campbell, R. B.

    1987-01-01

    The decrease of minority carrier lifetime as resistivity decreases in dendritic-web silicon solar cells is addressed. This variation is shown to be consistent with the presence of defect levels in the bandgap which arise from extended defects in the web material. The extended defects are oxide precipitates (SiOx) and the dislocation cores they decorate. Sensitivity to this background distribution of defect levels increases with doping because the Fermi level moves closer to the majority carrier band edge. For high-resistivity dendritic-web silicon, which has a low concentration of these extended defects, cell efficiencies as high as 16.6 percent (4 sq cm, 40 ohm-cm boron-doped base, AM1.5 global, 100 mW/sq cm, 25 C JPL LAPSS1 measurement) and a corresponding electron lifetime of 38 microsec have been obtained. Thickness effects occur in bifacial cell designs and in designs which use light trapping. In some cases, the dislocation/precipitate defect can be passivated through the full thickness of web cells by hydrogen ion implantation.

  17. Application of plasma silicon nitride to crystalline thin-film silicon solar cells. Paper

    Energy Technology Data Exchange (ETDEWEB)

    Schmidt, J.; Oberbeck, L.; Rinke, T.J.; Berge, C.; Bergmann, R.B.

    2002-07-01

    We use plasma-enhanced chemical vapour deposition to deposit silicon nitride (SiN{sub x}) films at low temperature(400 C) onto the front surface of two different types of crystalline thin-film Si solar cells. The silicon nitride acts as an excellent antireflection coating on Si and provides a very high degree of electronic surface passivation over a wide range of compositions, including near-stoichiometric and Si-rich SiN{sub x}. Application of stoichiometric SiN{sub x} to non-textured thin-film cells, epitaxially grown at low temperature by ion-assisted deposition onto a monocrystalline Si substrate, results in an open-circuit voltage of 622 mV, a short-circuit current density of 26.6 mA/cm{sup 2} and an efficiency of 12.7%. It is shown that the SiN{sub x}-passivated in-situ grown n{sup +}-emitter of this cell type allows to reach open-circuit voltages of up to 667 mV. Silicon-rich SiN{sub x} is applied to the phosphorus-diffused n{sup +}-emitter of a textured thin-film cell on a glass superstrate fabricated by layer-transfer. The emitter saturation current density of these cells is only 40-64 fA/cm{sup 2}, which allows for open-circuit voltages of up to 699 mV. An impressively high open-circuit voltage of 638 mV and a short-circuit current density of 32.0 mA/cm{sup 2} are obtained for a 25 {mu}m thick SiN{sub x}-passivated, random pyramid-textured transfer cell. A transfer cell efficiency of 15.3% is independently confirmed.

  18. Semiconductor Grade, Solar Silicon Purification Project. [photovoltaic solar energy conversion

    Science.gov (United States)

    Ingle, W. M.; Rosler, R. S.; Thompson, S. W.; Chaney, R. E.

    1979-01-01

    A low cost by-product, SiF4, is reacted with mg silicon to form SiF2 gas which is polymerized. The (SiF2)x polymer is heated forming volatile SixFy homologues which disproportionate on a silicon particle bed forming silicon and SiF4. The silicon analysis procedure relied heavily on mass spectroscopic and emission spectroscopic analysis. These analyses demonstrated that major purification had occured and some samples were indistinguishable from semiconductor grade silicon (except possibly for phosphorus). However, electrical analysis via crystal growth reveal that the product contains compensated phosphorus and boron.

  19. Results from the high efficiency solar panel experiment flown on CRRES

    International Nuclear Information System (INIS)

    Ray, K.P.; Mullen, E.G.; Trumble, T.M.

    1993-01-01

    This paper presents results from the High Efficiency Solar Panel Experiment (HESP) flown on the Combined Release and Radiation Effects Satellite (CRRES). The on-orbit solar cell degradation is correlated with the proton and electron environments. Comparisons between gallium arsenide germanium (GaAs/Ge) and silicon (Si) solar cells are presented, and results from three different annealing methods of like GaAs solar cells are compared

  20. Graphene Quantum Dot Layers with Energy-Down-Shift Effect on Crystalline-Silicon Solar Cells.

    Science.gov (United States)

    Lee, Kyung D; Park, Myung J; Kim, Do-Yeon; Kim, Soo M; Kang, Byungjun; Kim, Seongtak; Kim, Hyunho; Lee, Hae-Seok; Kang, Yoonmook; Yoon, Sam S; Hong, Byung H; Kim, Donghwan

    2015-09-02

    Graphene quantum dot (GQD) layers were deposited as an energy-down-shift layer on crystalline-silicon solar cell surfaces by kinetic spraying of GQD suspensions. A supersonic air jet was used to accelerate the GQDs onto the surfaces. Here, we report the coating results on a silicon substrate and the GQDs' application as an energy-down-shift layer in crystalline-silicon solar cells, which enhanced the power conversion efficiency (PCE). GQD layers deposited at nozzle scan speeds of 40, 30, 20, and 10 mm/s were evaluated after they were used to fabricate crystalline-silicon solar cells; the results indicate that GQDs play an important role in increasing the optical absorptivity of the cells. The short-circuit current density was enhanced by about 2.94% (0.9 mA/cm(2)) at 30 mm/s. Compared to a reference device without a GQD energy-down-shift layer, the PCE of p-type silicon solar cells was improved by 2.7% (0.4 percentage points).

  1. HOLE-BLOCKING LAYERS FOR SILICON/ORGANIC HETEROJUNCTIONS: A NEW CLASS OF HIGH-EFFICIENCY LOW-COST PV

    Energy Technology Data Exchange (ETDEWEB)

    Sturm, James [Princeton Univ., NJ (United States)

    2017-12-04

    This project is the first investigation of the use of thin titanium dioxide layers on silicon as a hole-blocking / electron-transparent selective contact to silicon. The work was motivated by the goal of a high-efficiency low-cost silicon-based solar cells that could be processed entirely at low temperature (300 Degree Celsius) or less, without requiring plasma-processing.

  2. Solar Grade Silicon from Agricultural By-products

    Energy Technology Data Exchange (ETDEWEB)

    Laine, Richard M

    2012-08-20

    C in an environmentally benign process to adjust SiO2:C ratios to those needed in EAF processing to Sipv. EAF processing with silica depleted rice hull ash (RHASD), with nanometer scale carbon/silica mixing, reacts up to 10x faster than in traditional EAF processing because the physical distances over which the reactions occur are measured in nm vs cm. We have focused on demonstrating the efficiency in existing furnace technologies, meaning our success offers the potential to convert some portion of existing US furnace infrastructure (for Simet) to high purity silicon production. The linkage of our process to the existing infrastructure of the U.S. silicon manufacturing industry, already a world leader, is unique compared to all other initiatives trying to produce Sipv. Purifying the silica/carbon mixture before EAF conversion to Sipv greatly reduces CAPEX and OPEX costs, reducing the final solar energy cost by $0.18-0.24/watt.

  3. Hybrid heterojunction solar cell based on organic-inorganic silicon nanowire array architecture.

    Science.gov (United States)

    Shen, Xiaojuan; Sun, Baoquan; Liu, Dong; Lee, Shuit-Tong

    2011-12-07

    Silicon nanowire arrays (SiNWs) on a planar silicon wafer can be fabricated by a simple metal-assisted wet chemical etching method. They can offer an excellent light harvesting capability through light scattering and trapping. In this work, we demonstrated that the organic-inorganic solar cell based on hybrid composites of conjugated molecules and SiNWs on a planar substrate yielded an excellent power conversion efficiency (PCE) of 9.70%. The high efficiency was ascribed to two aspects: one was the improvement of the light absorption by SiNWs structure on the planar components; the other was the enhancement of charge extraction efficiency, resulting from the novel top contact by forming a thin organic layer shell around the individual silicon nanowire. On the contrary, the sole planar junction solar cell only exhibited a PCE of 6.01%, due to the lower light trapping capability and the less hole extraction efficiency. It indicated that both the SiNWs structure and the thin organic layer top contact were critical to achieve a high performance organic/silicon solar cell. © 2011 American Chemical Society

  4. Impact of Nickel silicide Rear Metallization on Series Resistance of Crystalline Silicon Solar Cells

    KAUST Repository

    Bahabry, Rabab R

    2018-01-11

    The Silicon-based solar cell is one of the most important enablers toward high efficiency and low-cost clean energy resource. Metallization of silicon-based solar cells typically utilizes screen printed silver-Aluminium (Ag-Al) which affects the optimal electrical performance. To date, metal silicide-based ohmic contacts are occasionally used as an alternative candidate only to the front contact grid lines in crystalline silicon (c-Si) based solar cells. In this paper, we investigate the electrical characteristics of nickel mono-silicide (NiSi)/Cu-Al ohmic contact on the rear side of c-Si solar cells. We observe a significant enhancement in the fill factor of around 6.5% for NiSi/Cu-Al rear contacts leading to increasing the efficiency by 1.2% compared to Ag-Al. This is attributed to the improvement of the parasitic resistance in which the series resistance decreased by 0.737 Ω.cm². Further, we complement experimental observation with a simulation of different contact resistance values, which manifests NiSi/Cu-Al rear contact as a promising low-cost metallization for c-Si solar cells with enhanced efficiency.

  5. Sub-50-nm self-assembled nanotextures for enhanced broadband antireflection in silicon solar cells.

    Science.gov (United States)

    Rahman, Atikur; Ashraf, Ahsan; Xin, Huolin; Tong, Xiao; Sutter, Peter; Eisaman, Matthew D; Black, Charles T

    2015-01-21

    Materials providing broadband light antireflection have applications as highly transparent window coatings, military camouflage, and coatings for efficiently coupling light into solar cells and out of light-emitting diodes. In this work, densely packed silicon nanotextures with feature sizes smaller than 50 nm enhance the broadband antireflection compared with that predicted by their geometry alone. A significant fraction of the nanotexture volume comprises a surface layer whose optical properties differ substantially from those of the bulk, providing the key to improved performance. The nanotexture reflectivity is quantitatively well-modelled after accounting for both its profile and changes in refractive index at the surface. We employ block copolymer self-assembly for precise and tunable nanotexture design in the range of ~10-70 nm across macroscopic solar cell areas. Implementing this efficient antireflection approach in crystalline silicon solar cells significantly betters the performance gain compared with an optimized, planar antireflection coating.

  6. Recent Advances in Photoelectrochemical Applications of Silicon Materials for Solar-to-Chemicals Conversion.

    Science.gov (United States)

    Zhang, Doudou; Shi, Jingying; Zi, Wei; Wang, Pengpeng; Liu, Shengzhong Frank

    2017-11-23

    Photoelectrochemical (PEC) technology for the conversion of solar energy into chemicals requires cost-effective photoelectrodes to efficiently and stably drive anodic and/or cathodic half-reactions to complete the overall reactions for storing solar energy in chemical bonds. The shared properties among semiconducting photoelectrodes and photovoltaic (PV) materials are light absorption, charge separation, and charge transfer. Earth-abundant silicon materials have been widely applied in the PV industry, and have demonstrated their efficiency as alternative photoabsorbers for photoelectrodes. Many efforts have been made to fabricate silicon photoelectrodes with enhanced performance, and significant progress has been achieved in recent years. Herein, recent developments in crystalline and thin-film silicon-based photoelectrodes (including amorphous, microcrystalline, and nanocrystalline silicon) immersed in aqueous solution for PEC hydrogen production from water splitting are summarized, as well as applications in PEC CO 2 reduction and PEC regeneration of discharged species in redox flow batteries. Silicon is an ideal material for the cost-effective production of solar chemicals through PEC methods. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

  7. Bulk solar grade silicon: how chemistry and physics play to get a benevolent microstructured material

    Energy Technology Data Exchange (ETDEWEB)

    Pizzini, S. [University of Milano-Bicocca, Department of Materials Science, Milan (Italy); Nedsilicon SpA, Osimo, Ancona (Italy)

    2009-07-15

    The availability of low-cost alternatives to electronic grade silicon has been and still is the condition for the extensive use of photovoltaics as an efficient sun harvesting system. The first step towards this objective was positively carried out in the 1980s and resulted in the reduction in cost and energy of the growth process using as feedstock electronic grade scraps and a variety of solidification procedures, all of which deliver a multi-crystalline material of high photovoltaic quality. The second step was an intense R and D activity aiming at defining and developing at lab scale a new variety of silicon, called ''solar grade'' silicon, which should fulfil the requirement of both cost effectiveness and high conversion efficiency. The third step involved and still involves the development of cost-effective technologies for the manufacture of solar grade silicon, in alternative to the classical Siemens route, which relays, as is well-known, to the pyrolitic decomposition of high-purity trichlorosilane and which is, also in its more advanced versions, extremely energy intensive. Aim of this paper is to give the author's viewpoint about some open questions concerning bulk solar silicon for PV applications and about challenges and chances of novel feedstocks of direct metallurgical origin. (orig.)

  8. Tantalum Nitride Electron-Selective Contact for Crystalline Silicon Solar Cells

    KAUST Repository

    Yang, Xinbo

    2018-04-19

    Minimizing carrier recombination at contact regions by using carrier‐selective contact materials, instead of heavily doping the silicon, has attracted considerable attention for high‐efficiency, low‐cost crystalline silicon (c‐Si) solar cells. A novel electron‐selective, passivating contact for c‐Si solar cells is presented. Tantalum nitride (TaN x ) thin films deposited by atomic layer deposition are demonstrated to provide excellent electron‐transporting and hole‐blocking properties to the silicon surface, due to their small conduction band offset and large valence band offset. Thin TaNx interlayers provide moderate passivation of the silicon surfaces while simultaneously allowing a low contact resistivity to n‐type silicon. A power conversion efficiency (PCE) of over 20% is demonstrated with c‐Si solar cells featuring a simple full‐area electron‐selective TaNx contact, which significantly improves the fill factor and the open circuit voltage (Voc) and hence provides the higher PCE. The work opens up the possibility of using metal nitrides, instead of metal oxides, as carrier‐selective contacts or electron transport layers for photovoltaic devices.

  9. Comprehensive Study of SF_6/O_2 Plasma Etching for Mc-Silicon Solar Cells

    International Nuclear Information System (INIS)

    Li Tao; Zhou Chun-Lan; Wang Wen-Jing

    2016-01-01

    The mask-free SF_6/O_2 plasma etching technique is used to produce surface texturization of mc-silicon solar cells for efficient light trapping in this work. The SEM images and mc-silicon etching rate show the influence of plasma power, SF_6/O_2 flow ratios and etching time on textured surface. With the acidic-texturing samples as a reference, the reflection and IQE spectra are obtained under different experimental conditions. The IQE spectrum measurement shows an evident increase in the visible and infrared responses. By using the optimized plasma power, SF_6/O_2 flow ratios and etching time, the optimal efficiency of 15.7% on 50 × 50 mm"2 reactive ion etching textured mc-silicon silicon solar cells is achieved, mostly due to the improvement in the short-circuit current density. The corresponding open-circuit voltage, short-circuit current density and fill factor are 611 mV, 33.6 mA/cm"2, 76.5%, respectively. It is believed that such a low-cost and high-performance texturization process is promising for large-scale industrial silicon solar cell manufacturing. (paper)

  10. Tunnel Oxides Formed by Field-Induced Anodisation for Passivated Contacts of Silicon Solar Cells

    Directory of Open Access Journals (Sweden)

    Jingnan Tong

    2018-02-01

    Full Text Available Tunnel silicon oxides form a critical component for passivated contacts for silicon solar cells. They need to be sufficiently thin to allow carriers to tunnel through and to be uniform both in thickness and stoichiometry across the silicon wafer surface, to ensure uniform and low recombination velocities if high conversion efficiencies are to be achieved. This paper reports on the formation of ultra-thin silicon oxide layers by field-induced anodisation (FIA, a process that ensures uniform oxide thickness by passing the anodisation current perpendicularly through the wafer to the silicon surface that is anodised. Spectroscopical analyses show that the FIA oxides contain a lower fraction of Si-rich sub-oxides compared to wet-chemical oxides, resulting in lower recombination velocities at the silicon and oxide interface. This property along with its low temperature formation highlights the potential for FIA to be used to form low-cost tunnel oxide layers for passivated contacts of silicon solar cells.

  11. Flexible organic solar cells including efficiency enhancing grating structures

    International Nuclear Information System (INIS)

    De Oliveira Hansen, Roana Melina; Liu Yinghui; Madsen, Morten; Rubahn, Horst-Günter

    2013-01-01

    In this work, a new method for the fabrication of organic solar cells containing functional light-trapping nanostructures on flexible substrates is presented. Polyimide is spin-coated on silicon support substrates, enabling standard micro- and nanotechnology fabrication techniques, such as photolithography and electron-beam lithography, besides the steps required for the bulk-heterojunction organic solar cell fabrication. After the production steps, the solar cells on polyimide are peeled off the silicon support substrates, resulting in flexible devices containing nanostructures for light absorption enhancement. Since the solar cells avoid using brittle electrodes, the performance of the flexible devices is not affected by the peeling process. We have investigated three different nanostructured grating designs and conclude that gratings with a 500 nm pitch distance have the highest light-trapping efficiency for the selected active layer material (P3HT:PCBM), resulting in an enhancement of about 34% on the solar cell efficiency. The presented method can be applied to a large variety of flexible nanostructured devices in future applications. (paper)

  12. Efficiency Improvement of HIT Solar Cells on p-Type Si Wafers.

    Science.gov (United States)

    Wei, Chun-You; Lin, Chu-Hsuan; Hsiao, Hao-Tse; Yang, Po-Chuan; Wang, Chih-Ming; Pan, Yen-Chih

    2013-11-22

    Single crystal silicon solar cells are still predominant in the market due to the abundance of silicon on earth and their acceptable efficiency. Different solar-cell structures of single crystalline Si have been investigated to boost efficiency; the heterojunction with intrinsic thin layer (HIT) structure is currently the leading technology. The record efficiency values of state-of-the art HIT solar cells have always been based on n-type single-crystalline Si wafers. Improving the efficiency of cells based on p-type single-crystalline Si wafers could provide broader options for the development of HIT solar cells. In this study, we varied the thickness of intrinsic hydrogenated amorphous Si layer to improve the efficiency of HIT solar cells on p-type Si wafers.

  13. Low-cost multicrystalline back-contact silicon solar cells with screen printed metallization

    International Nuclear Information System (INIS)

    Neu, W.; Kress, A.; Jooss, W.; Fath, P.; Bucher, E.

    2002-01-01

    Adaptation to market requirements is a permanent challenge in industrial solar-cell production. Both increase of cell efficiency as well as lowering costs is demanded. Back-contacted solar cells offer multiple advantages in terms of reducing module assembling costs and enhanced cell efficiency. The investigated emitter-wrap-through (EWT) design [1] has a collecting emitter on front and rear side. These emitter areas are electrically connected by small holes. Due to the double-sided collecting junction, this cell design is favourable for materials with a low-minority charge carrier diffusion length leading to a higher short circuit current density. Until now most investigations on EWT solar cells were performed on Cz or even FZ silicon. This was justified as long as different processing techniques had to be developed and compared. But as an industrially applicable process sequence has recently been developed [2], the advantages of the EWT concept compared to conventionally processed cells have to be shown on multicrystalline material. In the following, a manufacturing process of EWT solar cells is presented which is especially adapted to the requirements of multicrystalline silicon. Effective surface texturization was reached by mechanical V-texturization and bulk passivation by a hydrogen plasma treatment. The efficiency of the best solar cells within this process reached 14.2% which is the highest efficiency reported so far for mc-Si 10x10 cm 2 EWT solar cells [3]. (author)

  14. Plasmonic silicon solar cells: impact of material quality and geometry.

    Science.gov (United States)

    Pahud, Celine; Isabella, Olindo; Naqavi, Ali; Haug, Franz-Josef; Zeman, Miro; Herzig, Hans Peter; Ballif, Christophe

    2013-09-09

    We study n-i-p amorphous silicon solar cells with light-scattering nanoparticles in the back reflector. In one configuration, the particles are fully embedded in the zinc oxide buffer layer; In a second configuration, the particles are placed between the buffer layer and the flat back electrode. We use stencil lithography to produce the same periodic arrangement of the particles and we use the same solar cell structure on top, thus establishing a fair comparison between a novel plasmonic concept and its more traditional counterpart. Both approaches show strong resonances around 700 nm in the external quantum efficiency the position and intensity of which vary strongly with the nanoparticle shape. Moreover, disagreement between simulations and our experimental results suggests that the dielectric data of bulk silver do not correctly represent the reality. A better fit is obtained by introducing a porous interfacial layer between the silver and zinc oxide. Without the interfacial layer, e.g. by improved processing of the nanoparticles, our simulations show that the nanoparticles concept could outperform traditional back reflectors.

  15. Economic efficiency of application of solar window

    Science.gov (United States)

    Shapoval, Stepan

    2017-12-01

    Priority and qualitatively new direction in the fuel and energy sector is renewable energy. This paper describes a feasibility study of using solar window in the system of solar heat supply. The article presents literature data about the effectiveness of the use of solar systems in other countries. The results confirm a sufficient efficiency of solar heat supply with using solar Windows. Insights based on practical experience and mathematical calculations, which are aimed at a detailed explanation of economic efficiency of the proposed construction.

  16. Berkeley Lab Sheds Light on Improving Solar Cell Efficiency

    International Nuclear Information System (INIS)

    Lawrence Berkeley National Laboratory

    2007-01-01

    Typical manufacturing methods produce solar cells with an efficiency of 12-15%; and 14% efficiency is the bare minimum for achieving a profit. In work performed at the Ernest Orlando Lawrence Berkeley National Laboratory (Berkeley, CA, 5 10-486-577 1)--a US Department of Energy national laboratory that conducts unclassified scientific research and is managed by the University of California--scientist Scott McHugo has obtained keen insights into the impaired performance of solar cells manufactured from polycrystalline silicon. The solar cell market is potentially vast, according to Berkeley Lab. Lightweight solar panels are highly beneficial for providing electrical power to remote locations in developing nations, since there is no need to build transmission lines or truck-in generator fuel. Moreover, industrial nations confronted with diminishing resources have active programs aimed at producing improved, less expensive solar cells. 'In a solar cell, there is a junction between p-type silicon and an n-type layer, such as diffused-in phosphorous', explained McHugo, who is now with Berkeley Lab's Accelerator and Fusion Research Division. 'When sunlight is absorbed, it frees electrons, which start migrating in a random-walk fashion toward that junction. If the electrons make it to the junction; they contribute to the cell's output of electric current. Often, however, before they reach the junction, they recombine at specific sites in the crystal' (and, therefore, cannot contribute to current output). McHugo scrutinized a map of a silicon wafer in which sites of high recombination appeared as dark regions. Previously, researchers had shown that such phenomena occurred not primarily at grain boundaries in the polycrystalline material, as might be expected, but more often at dislocations in the crystal. However, the dislocations themselves were not the problem. Using a unique heat treatment technique, McHugo performed electrical measurements to investigate the material

  17. Electrically active defects in solar grade multicrystalline silicon

    DEFF Research Database (Denmark)

    Dahl, Espen

    2013-01-01

    Shortage in high purity silicon feedstock, as a result of the formidable increased demand for solar cell devices during the last two decades, can be mitigated by the introduction of cheaper feedstock of solar grade (So-G) quality. Silicon produced through the metallurgical process route has shown...... the potential to be such a feedstock. However, this feedstock has only few years of active commercial history and the detailed understanding of the nature of structural defects in this material still has fundamental shortcomings. In this thesis the electrical activity of structural defects, commonly associated...

  18. Increased radiation resistance in lithium-counterdoped silicon solar cells

    Science.gov (United States)

    Weinberg, I.; Swartz, C. K.; Mehta, S.

    1984-01-01

    Lithium-counterdoped n(+)p silicon solar cells are found to exhibit significantly increased radiation resistance to 1-MeV electron irradiation when compared to boron-doped n(+)p silicon solar cells. In addition to improved radiation resistance, considerable damage recovery by annealing is observed in the counterdoped cells at T less than or equal to 100 C. Deep level transient spectroscopy measurements are used to identify the defect whose removal results in the low-temperature aneal. It is suggested that the increased radiation resistance of the counterdoped cells is primarily due to interaction of the lithium with interstitial oxygen.

  19. Advancements in n-type base crystalline silicon solar cells and their emergence in the photovoltaic industry.

    Science.gov (United States)

    ur Rehman, Atteq; Lee, Soo Hong

    2013-01-01

    The p-type crystalline silicon wafers have occupied most of the solar cell market today. However, modules made with n-type crystalline silicon wafers are actually the most efficient modules up to date. This is because the material properties offered by n-type crystalline silicon substrates are suitable for higher efficiencies. Properties such as the absence of boron-oxygen related defects and a greater tolerance to key metal impurities by n-type crystalline silicon substrates are major factors that underline the efficiency of n-type crystalline silicon wafer modules. The bi-facial design of n-type cells with good rear-side electronic and optical properties on an industrial scale can be shaped as well. Furthermore, the development in the industrialization of solar cell designs based on n-type crystalline silicon substrates also highlights its boost in the contributions to the photovoltaic industry. In this paper, a review of various solar cell structures that can be realized on n-type crystalline silicon substrates will be given. Moreover, the current standing of solar cell technology based on n-type substrates and its contribution in photovoltaic industry will also be discussed.

  20. Thin-film silicon solar cell technology

    Czech Academy of Sciences Publication Activity Database

    Shah, A. V.; Schade, H.; Vaněček, Milan; Meier, J.; Vallat-Sauvain, E.; Wyrsch, N.; Kroll, U.; Droz, C.; Bailat, J.

    2004-01-01

    Roč. 12, - (2004), s. 113-142 ISSN 1062-7995 R&D Projects: GA MŽP SN/320/11/03 Institutional research plan: CEZ:AV0Z1010914 Keywords : thin-film silicon modules * hydrogenerated amorphous silicon(a-Si:H) * hydrogenerated microcrystalline (ćc-Si:H) * transparent conductive oxydes(TCOs) * building-integrated photovoltaics(BIPV) Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.196, year: 2004

  1. Characterization of thin-film silicon materials and solar cells through numerical modeling

    NARCIS (Netherlands)

    Pieters, B.E.

    2008-01-01

    At present most commercially available solar cells are made of crystalline silicon (c-Si). The disadvantages of crystalline silicon solar cells are the high material cost and energy consumption during production. A cheaper alternative can be found in thin-film silicon solar cells. The thin-film

  2. A novel high efficiency solar photovoltalic pump

    NARCIS (Netherlands)

    Diepens, J.F.L.; Smulders, P.T.; Vries, de D.A.

    1993-01-01

    The daily average overall efficiency of a solar pump system is not only influenced by the maximum efficiency of the components of the system, but just as much by the correct matching of the components to the local irradiation pattern. Normally centrifugal pumps are used in solar pump systems. The

  3. Substrate and p-layer effects on polymorphous silicon solar cells

    Directory of Open Access Journals (Sweden)

    Abolmasov S.N.

    2014-07-01

    Full Text Available The influence of textured transparent conducting oxide (TCO substrate and p-layer on the performance of single-junction hydrogenated polymorphous silicon (pm-Si:H solar cells has been addressed. Comparative studies were performed using p-i-n devices with identical i/n-layers and back reflectors fabricated on textured Asahi U-type fluorine-doped SnO2, low-pressure chemical vapor deposited (LPCVD boron-doped ZnO and sputtered/etched aluminum-doped ZnO substrates. The p-layers were hydrogenated amorphous silicon carbon and microcrystalline silicon oxide. As expected, the type of TCO and p-layer both have a great influence on the initial conversion efficiency of the solar cells. However they have no effect on the defect density of the pm-Si:H absorber layer.

  4. Graphene as transparent and current spreading electrode in silicon solar cell

    Energy Technology Data Exchange (ETDEWEB)

    Behura, Sanjay K., E-mail: sanjaybehura@gmail.com; Nayak, Sasmita; Jani, Omkar [Solar Energy Research Wing, Gujarat Energy Research and Management Institute - Research, Innovation and Incubation Centre, Gandhinagar 382007, Gujarat (India); Mahala, Pramila [School of Solar Energy, Pandit Deendayal Petroleum University, Gandhinagar 382007, Gujarat (India)

    2014-11-15

    Fabricated bi-layer graphene (BLG) has been studied as transparent and current spreading electrode (TCSE) for silicon solar cell, using TCAD-Silvaco 2D simulation. We have carried out comparative study using both Ag grids and BLG as current spreading electrode (CSE) and TCSE, respectively. Our study reveals that BLG based solar cell shows better efficiency of 24.85% than Ag-based cell (21.44%), in all of the critical aspects, including generation rate, recombination rate, electric field, potential and quantum efficiency. Further BLG based cell exhibits pronounce rectifying behavior, low saturation current, and good turn-on voltage while studying in dark.

  5. Graphene as transparent and current spreading electrode in silicon solar cell

    Directory of Open Access Journals (Sweden)

    Sanjay K. Behura

    2014-11-01

    Full Text Available Fabricated bi-layer graphene (BLG has been studied as transparent and current spreading electrode (TCSE for silicon solar cell, using TCAD-Silvaco 2D simulation. We have carried out comparative study using both Ag grids and BLG as current spreading electrode (CSE and TCSE, respectively. Our study reveals that BLG based solar cell shows better efficiency of 24.85% than Ag-based cell (21.44%, in all of the critical aspects, including generation rate, recombination rate, electric field, potential and quantum efficiency. Further BLG based cell exhibits pronounce rectifying behavior, low saturation current, and good turn-on voltage while studying in dark.

  6. Development of processing procedures for advanced silicon solar cells. [antireflection coatings and short circuit currents

    Science.gov (United States)

    Scott-Monck, J. A.; Stella, P. M.; Avery, J. E.

    1975-01-01

    Ten ohm-cm silicon solar cells, 0.2 mm thick, were produced with short circuit current efficiencies up to thirteen percent and using a combination of recent technical advances. The cells were fabricated in conventional and wraparound contact configurations. Improvement in cell collection efficiency from both the short and long wavelengths region of the solar spectrum was obtained by coupling a shallow junction and an optically transparent antireflection coating with back surface field technology. Both boron diffusion and aluminum alloying techniques were evaluated for forming back surface field cells. The latter method is less complicated and is compatible with wraparound cell processing.

  7. Dephosphorization of Levitated Silicon-Iron Droplets for Production of Solar-Grade Silicon

    Science.gov (United States)

    Le, Katherine; Yang, Yindong; Barati, Mansoor; McLean, Alexander

    2018-05-01

    The treatment of relatively inexpensive silicon-iron alloys is a potential refining route in order to generate solar-grade silicon. Phosphorus is one of the more difficult impurity elements to remove by conventional processing. In this study, electromagnetic levitation was used to investigate phosphorus behavior in silicon-iron alloy droplets exposed to H2-Ar gas mixtures under various experimental conditions including, refining time, temperature (1723 K to 1993 K), gas flow rate, iron content, and initial phosphorus concentration in the alloy. Thermodynamic modeling of the dephosphorization reaction permitted prediction of the various gaseous products and indicated that diatomic phosphorus is the dominant species formed.

  8. Effect of light trapping in an amorphous silicon solar cell

    International Nuclear Information System (INIS)

    Iftiquar, S.M.; Jung, Juyeon; Park, Hyeongsik; Cho, Jaehyun; Shin, Chonghoon; Park, Jinjoo; Jung, Junhee; Bong, Sungjae; Kim, Sunbo; Yi, Junsin

    2015-01-01

    Light trapping in amorphous silicon based solar cell has been investigated theoretically. The substrate for these cells can be textured, including pyramidally textured c-Si wafer, to improve capture of incident light. A thin silver layer, deposited on the substrate of an n–i–p cell, ultimately goes at the back of the cell structure and can act a back reflector to improve light trapping. The two physical solar cells we investigated had open circuit voltages (V oc ) of 0.87, 0.90 V, short circuit current densities (J sc ) of 14.2, 15.36 mA/cm 2 respectively. The first cell was investigated for the effect on its performance while having and not having light trapping scheme (LT), when thickness of the active layer (d i ) was changed in the range of 100 nm to 800 nm. In both the approaches, for having or not having LT, the short circuit current density increases with d i while the V oc and fill factor, decreases steadily. However, maximum cell efficiency can be obtained when d i = 400 nm, and hence it was considered optimized thickness of the active layer, that was used for further investigation. With the introduction of light trapping to the second cell, it shows a further enhancement in J sc and red response of the external quantum efficiency to 16.6 mA/cm 2 and by 11.1% respectively. Considering multiple passages of light inside the cell, we obtained an improvement in cell efficiency from 9.7% to 10.6%. - Highlights: • A theoretical analysis of light trapping in p–i–n and n–i–p type solar cells • J sc increases and V oc decreases with the increase in i-layer thickness. • Observed optimized thickness of i-layer as 400 nm • J sc improved from 15.4 mA/cm 2 to 16.6 mA/cm 2 due to the light trapping. • Efficiency (η) improved from 9.7% to 10.6% due to better red response of the EQE

  9. Ultrathin Oxide Passivation Layer by Rapid Thermal Oxidation for the Silicon Heterojunction Solar Cell Applications

    Directory of Open Access Journals (Sweden)

    Youngseok Lee

    2012-01-01

    Full Text Available It is difficult to deposit extremely thin a-Si:H layer in heterojunction with intrinsic thin layer (HIT solar cell due to thermal damage and tough process control. This study aims to understand oxide passivation mechanism of silicon surface using rapid thermal oxidation (RTO process by examining surface effective lifetime and surface recombination velocity. The presence of thin insulating a-Si:H layer is the key to get high Voc by lowering the leakage current (I0 which improves the efficiency of HIT solar cell. The ultrathin thermal passivation silicon oxide (SiO2 layer was deposited by RTO system in the temperature range 500–950°C for 2 to 6 minutes. The thickness of the silicon oxide layer was affected by RTO annealing temperature and treatment time. The best value of surface recombination velocity was recorded for the sample treated at a temperature of 850°C for 6 minutes at O2 flow rate of 3 Lpm. A surface recombination velocity below 25 cm/s was obtained for the silicon oxide layer of 4 nm thickness. This ultrathin SiO2 layer was employed for the fabrication of HIT solar cell structure instead of a-Si:H, (i layer and the passivation and tunneling effects of the silicon oxide layer were exploited. The photocurrent was decreased with the increase of illumination intensity and SiO2 thickness.

  10. Distribution of impurity elements in slag-silicon equilibria for oxidative refining of metallurgical silicon for solar cell applications

    Energy Technology Data Exchange (ETDEWEB)

    Johnston, M.D.; Barati, M. [Department of Materials Science and Engineering, The University of Toronto, 184 College Street, Toronto, Ont. (Canada)

    2010-12-15

    The possibility of refining metallurgical grade silicon to a high-purity product for solar cell applications by the slagging of impurity elements was investigated. Distribution coefficients were determined for B, Ca, Mg, Fe, K and P between magnesia or alumina saturated Al{sub 2}O{sub 3}-CaO-MgO-SiO{sub 2} and Al{sub 2}O{sub 3}-BaO-SiO{sub 2} slags and silicon at 1500 C. The partitioning of the impurity elements between molten silicon and slag was examined in terms of basicity and oxygen potential of the slag, with particular focus on the behaviour of boron and phosphorus. The experimental results showed that both of these aspects of slag chemistry have a significant influence on the distribution coefficient of B and P. Increasing the oxygen potential by additions of silica was found to increase the distribution coefficients for both B and P. Increasing the basicity of the slag was not always effective in achieving high removal of these elements from silicon as excess amounts of basic oxides lower the activity of silica and consequently the oxygen potential. The extent of this effect is such that increasing basicity can lead to a decrease in distribution coefficient. Increasing lime in the slag increased distribution coefficients for B and P, but this counterbalancing effect was such that distributions were the lowest in barium-containing slags, despite barium oxide being the most basic of the fluxes used in this study. The highest removal efficiencies achieved were of the order of 80% and 90% for B and P, respectively. It was demonstrated that for the removal of B and P from metallurgical-grade silicon to solar-grade levels, a slag mass about 5 times the mass of silicon would be required. (author)

  11. Cost analysis of two silicon heterojunction solar cell designs

    NARCIS (Netherlands)

    Louwen, A.; van Sark, W.G.J.H.M.; Schropp, R.E.I.; Turkenburg, W.C.; Faaij, A.P.C.

    2013-01-01

    Research and Development of Silicon Heterojunction (SHJ) solar cells has seen a marked increase since the recent expiry of core patents describing SHJ technology. This paper investigates the production costs associated with two different SHJ cell designs investigated within the FLASH programme, a

  12. Plasmonic silicon solar cells : Impact of material quality and geometry

    NARCIS (Netherlands)

    Pahud, C.; Isabella, O.; Naqavi, A.; Haug, F.J.; Zeman, M.; Herzig, H.P.; Ballif, C.

    2013-01-01

    We study n-i-p amorphous silicon solar cells with light-scattering nanoparticles in the back reflector. In one configuration, the particles are fully embedded in the zinc oxide buffer layer; In a second configuration, the particles are placed between the buffer layer and the flat back electrode. We

  13. Transparent conducting oxide layers for thin film silicon solar cells

    NARCIS (Netherlands)

    Rath, J.K.; Liu, Y.; de Jong, M.M.; de Wild, J.; Schuttauf, J.A.; Brinza, M.; Schropp, R.E.I.

    2009-01-01

    Texture etching of ZnO:1%Al layers using diluted HCl solution provides excellent TCOs with crater type surface features for the front contact of superstrate type of thin film silicon solar cells. The texture etched ZnO:Al definitely gives superior performance than Asahi SnO2:F TCO in case of

  14. Low energy production processes in manufacturing of silicon solar cells

    Science.gov (United States)

    Kirkpatrick, A. R.

    1976-01-01

    Ion implantation and pulsed energy techniques are being combined for fabrication of silicon solar cells totally under vacuum and at room temperature. Simplified sequences allow very short processing times with small process energy consumption. Economic projections for fully automated production are excellent.

  15. A new tevchnique for production of amorphous silicon solar cells

    International Nuclear Information System (INIS)

    Andrade, A.M. de; Pereyra, I.; Sanematsu, M.S.; Corgnier, S.L.L.; Fonseca, F.J.

    1984-01-01

    It is presented a new technique for the production of amorphous silicon solar cells based on the development of thin films of a-Si in a reactor in which the decomposition of the sylane, induced by capacitively coupled RF, and the film deposition occur in separate chambers. (M.W.O.) [pt

  16. Aluminium alloyed iron-silicide/silicon solar cells: A simple approach for low cost environmental-friendly photovoltaic technology.

    Science.gov (United States)

    Kumar Dalapati, Goutam; Masudy-Panah, Saeid; Kumar, Avishek; Cheh Tan, Cheng; Ru Tan, Hui; Chi, Dongzhi

    2015-12-03

    This work demonstrates the fabrication of silicide/silicon based solar cell towards the development of low cost and environmental friendly photovoltaic technology. A heterostructure solar cells using metallic alpha phase (α-phase) aluminum alloyed iron silicide (FeSi(Al)) on n-type silicon is fabricated with an efficiency of 0.8%. The fabricated device has an open circuit voltage and fill-factor of 240 mV and 60%, respectively. Performance of the device was improved by about 7 fold to 5.1% through the interface engineering. The α-phase FeSi(Al)/silicon solar cell devices have promising photovoltaic characteristic with an open circuit voltage, short-circuit current and a fill factor (FF) of 425 mV, 18.5 mA/cm(2), and 64%, respectively. The significant improvement of α-phase FeSi(Al)/n-Si solar cells is due to the formation p(+-)n homojunction through the formation of re-grown crystalline silicon layer (~5-10 nm) at the silicide/silicon interface. Thickness of the regrown silicon layer is crucial for the silicide/silicon based photovoltaic devices. Performance of the α-FeSi(Al)/n-Si solar cells significantly depends on the thickness of α-FeSi(Al) layer and process temperature during the device fabrication. This study will open up new opportunities for the Si based photovoltaic technology using a simple, sustainable, and los cost method.

  17. Movable air solar collector and its efficiency

    International Nuclear Information System (INIS)

    Lauva, A.; Aboltinš, A.; Palabinskis, J.; Karpova Sadigova, N.

    2008-01-01

    Implementing the guidelines of the Latvian National Programme for Energy in the field of alternative energy, intensive research shall be carried on regarding the use of solar energy, as it can be successfully used not only for the purposes of water heating and production of electrical energy, but also for air warming. The amount of heat necessary for the drying of rough forage and grain drying by active aeration in June, July and August can be obtained using solar radiation. The Latvian Guidelines for the Energy Development 2006-2016 state that the solar radiance in Latvia is of quite low intensity. The total amount of solar energy is 1109 kWh m -2 per year. The period of usage of the solar thermal energy is beginning from the last decade of April, when the intensity of radiation is 120 kWh m -2 , until the first decade of September. Within this period (approximately 1800 hours), it is possible to use the solar thermal energy by placing solar collectors. The usage of solar collectors for in drying of agricultural production is topical from the viewpoint of decreasing the consumption of energy used for the drying, as electrical energy and fossil energy resources become more expensive and tend to run out. In the processes that concern drying of agricultural production, efficiently enough solar radiation energy can be used. Due to this reason researching continues and expands in the field of usage of solar energy for the processes of drying and heating. The efficiency factor of the existing solar collectors is not high, but they are of simple design and cheep for production and exploitation. By improving the design of the solar collectors and choosing modern materials that absorb the solar radiation energy, it is possible the decrease the efficiency factor of solar collectors and decrease the production costs. In the scientific laboratory of grain drying and storage of Latvia University of Agriculture, a pilot device movable folding solar collector pilot device

  18. Solar breeder: Energy payback time for silicon photovoltaic systems

    Science.gov (United States)

    Lindmayer, J.

    1977-01-01

    The energy expenditures of the prevailing manufacturing technology of terrestrial photovoltaic cells and panels were evaluated, including silicon reduction, silicon refinement, crystal growth, cell processing and panel building. Energy expenditures include direct energy, indirect energy, and energy in the form of equipment and overhead expenses. Payback times were development using a conventional solar cell as a test vehicle which allows for the comparison of its energy generating capability with the energies expended during the production process. It was found that the energy payback time for a typical solar panel produced by the prevailing technology is 6.4 years. Furthermore, this value drops to 3.8 years under more favorable conditions. Moreover, since the major energy use reductions in terrestrial manufacturing have occurred in cell processing, this payback time directly illustrates the areas where major future energy reductions can be made -- silicon refinement, crystal growth, and panel building.

  19. Development of Novel Front Contract Pastes for Crystalline Silicon Solar Cells

    Energy Technology Data Exchange (ETDEWEB)

    Duty, C.; Jellison, D. G.E. P.; Joshi, P.

    2012-04-05

    In order to improve the efficiencies of silicon solar cells, paste to silicon contact formation mechanisms must be more thoroughly understood as a function of paste chemistry, wafer properties and firing conditions. Ferro Corporation has been involved in paste development for over 30 years and has extensive expertise in glass and paste formulations. This project has focused on the characterization of the interface between the top contact material (silver paste) and the underlying silicon wafer. It is believed that the interface between the front contact silver and the silicon wafer plays a dominant role in the electrical performance of the solar cell. Development of an improved front contact microstructure depends on the paste chemistry, paste interaction with the SiNx, and silicon (“Si”) substrate, silicon sheet resistivity, and the firing profile. Typical front contact ink contains silver metal powders and flakes, glass powder and other inorganic additives suspended in an organic medium of resin and solvent. During fast firing cycles glass melts, wets, corrodes the SiNx layer, and then interacts with underlying Si. Glass chemistry is also a critical factor in the development of an optimum front contact microstructure. Over the course of this project, several fundamental characteristics of the Ag/Si interface were documented, including a higher-than-expected distribution of voids along the interface, which could significantly impact electrical conductivity. Several techniques were also investigated for the interfacial analysis, including STEM, EDS, FIB, EBSD, and ellipsometry.

  20. SiNTO EWT silicon solar cells

    OpenAIRE

    Fallisch, A.; Keding, R.; Kästner, G.; Bartsch, J.; Werner, S.; Stüwe, D.; Specht, J.; Preu, R.; Biro, D.

    2010-01-01

    In this work we combine the SiNTO cell process with the EWT cell concept. All masking steps are performed by inkjet printing technology. The via-holes and laser-fired contacts are created by high-speed laser drilling. A new polishing process, which is suitable for inkjet masking, to pattern the interdigitated grid on the rear side is developed. For passivation purposes a thermal silicon oxide is used for the rear surface and a silicon nitride antireflection coating for the front surface. An e...

  1. Three-dimensional atomic mapping of hydrogenated polymorphous silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Wanghua, E-mail: wanghua.chen@polytechnique.edu; Roca i Cabarrocas, Pere [LPICM, CNRS, Ecole Polytechnique, Université Paris-Saclay, 91128 Palaiseau (France); Pareige, Philippe [GPM, CNRS, Université et INSA de Rouen, Normandie Université, 76801 Saint Etienne du Rouvray (France)

    2016-06-20

    Hydrogenated polymorphous silicon (pm-Si:H) is a nanostructured material consisting of silicon nanocrystals embedded in an amorphous silicon matrix. Its use as the intrinsic layer in thin film p-i-n solar cells has led to good cell properties in terms of stability and efficiency. Here, we have been able to assess directly the concentration and distribution of nanocrystals and impurities (dopants) in p-i-n solar cells, by using femtosecond laser-assisted atom probe tomography (APT). An effective sample preparation method for APT characterization is developed. Based on the difference in atomic density between hydrogenated amorphous and crystalline silicon, we are able to distinguish the nanocrystals from the amorphous matrix by using APT. Moreover, thanks to the three-dimensional reconstruction, we demonstrate that Si nanocrystals are homogeneously distributed in the entire intrinsic layer of the solar cell. The influence of the process pressure on the incorporation of nanocrystals and their distribution is also investigated. Thanks to APT we could determine crystalline fractions as low as 4.2% in the pm-Si:H films, which is very difficult to determine by standard techniques, such as X-ray diffraction, Raman spectroscopy, and spectroscopic ellipsometry. Moreover, we also demonstrate a sharp p/i interface in our solar cells.

  2. Polymorphous silicon thin films produced in dusty plasmas: application to solar cells

    International Nuclear Information System (INIS)

    Roca i Cabarrocas, Pere; Chaabane, N; Kharchenko, A V; Tchakarov, S

    2004-01-01

    We summarize our current understanding of the optimization of PIN solar cells produced by plasma enhanced chemical vapour deposition from silane-hydrogen mixtures. To increase the deposition rate, the discharge is operated under plasma conditions close to powder formation, where silicon nanocrystals contribute to the deposition of so-called polymorphous silicon thin films. We show that the increase in deposition rate can be achieved via an accurate control of the plasma parameters. However, this also results in a highly defective interface in the solar cells due to the bombardment of the P-layer by positively charged nanocrystals during the deposition of the I-layer. We show that decreasing the ion energy by increasing the total pressure or by using silane-helium mixtures allows us to increase both the deposition rate and the solar cells efficiency, as required for cost effective thin film photovoltaics

  3. Gettering improvements of minority-carrier lifetimesin solar grade silicon

    DEFF Research Database (Denmark)

    Osinniy, Viktor; Nylandsted Larsen, Arne; Dahl, Espen

    2012-01-01

    The minority-carrier lifetime in p-type solar-grade silicon (SoG-Si) produced by Elkem Solar was investigated after different types of heat treatment. Two groups of samples differing by the as-grown lifetimes were exposed to internal and phosphorus gettering using constant and variable temperature...... processes. Optimal heat-treatment parameters for each group of samples were then identified which improved the minority-carrier lifetimes to values higher than the minimum value needed for solar cells. Phosphorus gettering using a variable temperature process enhanced in particular the lifetime within each...

  4. Opto-electronic analysis of silicon solar cells by LBIC investigations and current-voltage characterization

    International Nuclear Information System (INIS)

    Thantsha, N.M.; Macabebe, E.Q.B.; Vorster, F.J.; Dyk, E.E. van

    2009-01-01

    A different laser beam induced current (LBIC) mapping technique has been used for the measurements of spatial variation of light generated current of a solar cell. These variations are caused by parasitic resistances and defects at grain boundaries (GBs) in multicrystalline silicon solar cells (mc-Si). This study investigates and identifies the regions within mc-Si solar cells where dominating recombination and lifetime limiting processes occur. A description of the LBIC technique is presented and the results show how multicrystalline GBs and other defects affect the light generated current of a spot illuminated mc-Si solar cell. The results of the internal quantum efficiency (IQE) at wavelength of 660 nm revealed that some regions in mc-Si solar cell give rise to paths that lead current away from the intended load.

  5. Opto-electronic analysis of silicon solar cells by LBIC investigations and current-voltage characterization

    Energy Technology Data Exchange (ETDEWEB)

    Thantsha, N.M.; Macabebe, E.Q.B.; Vorster, F.J. [Department of Physics, PO Box 77000, Nelson Mandela Metropolitan University, Port Elizabeth 6031 (South Africa); Dyk, E.E. van, E-mail: ernest.vandyk@nmmu.ac.z [Department of Physics, PO Box 77000, Nelson Mandela Metropolitan University, Port Elizabeth 6031 (South Africa)

    2009-12-01

    A different laser beam induced current (LBIC) mapping technique has been used for the measurements of spatial variation of light generated current of a solar cell. These variations are caused by parasitic resistances and defects at grain boundaries (GBs) in multicrystalline silicon solar cells (mc-Si). This study investigates and identifies the regions within mc-Si solar cells where dominating recombination and lifetime limiting processes occur. A description of the LBIC technique is presented and the results show how multicrystalline GBs and other defects affect the light generated current of a spot illuminated mc-Si solar cell. The results of the internal quantum efficiency (IQE) at wavelength of 660 nm revealed that some regions in mc-Si solar cell give rise to paths that lead current away from the intended load.

  6. Semi-transparent perovskite solar cells for tandems with silicon and CIGS

    KAUST Repository

    Bailie, Colin D.

    2015-01-01

    © 2015 The Royal Society of Chemistry. A promising approach for upgrading the performance of an established low-bandgap solar technology without adding much cost is to deposit a high bandgap polycrystalline semiconductor on top to make a tandem solar cell. We use a transparent silver nanowire electrode on perovskite solar cells to achieve a semi-transparent device. We place the semi-transparent cell in a mechanically-stacked tandem configuration onto copper indium gallium diselenide (CIGS) and low-quality multicrystalline silicon (Si) to achieve solid-state polycrystalline tandem solar cells with a net improvement in efficiency over the bottom cell alone. This work paves the way for integrating perovskites into a low-cost and high-efficiency (>25%) tandem cell.

  7. Improving the Quality of the Deteriorated Regions of Multicrystalline Silicon Ingots during General Solar Cell Processes

    International Nuclear Information System (INIS)

    Wu Shan-Shan; Wang Lei; Yang De-Ren

    2011-01-01

    The behavior of wafers and solar cells from the border of a multicrystalline silicon (mc-Si) ingot, which contain deteriorated regions, is investigated. It is found that the diffusion length distribution of minority carriers in the cells is uniform, and high efficiency of the solar cells (about 16%) is achieved. It is considered that the quality of the deteriorated regions could be improved to be similar to that of adjacent regions. Moreover, it is indicated that during general solar cell fabrication, phosphorus gettering and hydrogen passivation could significantly improve the quality of deteriorated regions, while aluminum gettering by RTP could not. Therefore, it is suggested that the border of a mc-Si ingot could be used to fabricate high efficiency solar cells, which will increase mc-Si utilization effectively. (condensed matter: structure, mechanical and thermal properties)

  8. The use of electro-deoxidation in molten salts to reduce the energy consumption of solar grade silicon and increase the output of PV solar cells

    Directory of Open Access Journals (Sweden)

    Paul R. Coxon

    2015-12-01

    Full Text Available Solar photovoltaics, based upon silicon, are the most popular form of solar cell with efficiencies around 20%. These efficiencies can be further increased by employing light trapping schemes to minimise optical losses through scattering and reflection which enhances the amount of light absorbed and number of photo-carriers generated. Typical approaches employ antireflection coatings (ARCs or texturise the surface of the silicon disks, so that the structure consists of an array of needles which can absorb most of the light. Usually, these structures are created by leaching the silicon with hydrofluoric-based acids or by reactive ion etching (RIE methods. This paper reviews some of the methods for improving the energy efficiency of silicon production, and describes the use of electro-deoxidation of SiO2 layers, on silicon, in molten calcium chloride to form nano-porous black silicon (b-Si structures. By coating b-Si surface with TiO2, a common ARC, extremely black surfaces with negligible reflectance of about 0.1%, are produced, which can have applications for low-cost high efficiency solar cells.

  9. Amorphous silicon thin-film solar cells on glass fiber textiles

    Energy Technology Data Exchange (ETDEWEB)

    Plentz, Jonathan, E-mail: jonathan.plentz@leibniz-ipht.de; Andrä, Gudrun; Pliewischkies, Torsten; Brückner, Uwe; Eisenhawer, Björn; Falk, Fritz

    2016-02-15

    Graphical abstract: - Highlights: • Amorphous silicon solar cells on textile glass fiber fabrics are demonstrated. • Open circuit voltages of 883 mV show shunt-free contacting on non-planar fabrics. • Short-circuit current densities of 3.7 mA/cm{sup 2} are limited by transmission losses. • Fill factors of 43.1% and pseudo fill factors of 70.2% show high series resistance. • Efficiencies of 1.4% and pseudo efficiencies of 2.1% realized on textile fabrics. - Abstract: In this contribution, amorphous silicon thin-film solar cells on textile glass fiber fabrics for smart textiles are prepared and the photovoltaic performance is characterized. These solar cells on fabrics delivered open circuit voltages up to 883 mV. This shows that shunt-free contacting of the solar cells was successful, even in case of non-planar fabrics. The short-circuit current densities up to 3.7 mA/cm{sup 2} are limited by transmission losses in a 10 nm thin titanium layer, which was used as a semi-transparent contact. The low conductivity of this layer limits the fill factor to 43.1%. Pseudo fill factors, neglecting the series resistance, up to 70.2% were measured. Efficiencies up to 1.4% and pseudo efficiencies up to 2.1% were realized on textile fabrics. A transparent conductive oxide could further improve the efficiency to above 5%.

  10. Improvement in photovoltaic properties of silicon solar cells with a doped porous silicon layer with rare earth (Ce, La) as antireflection coatings

    International Nuclear Information System (INIS)

    Atyaoui, Malek; Dimassi, Wissem; Atyaoui, Atef; Elyagoubi, Jalel; Ouertani, Rachid; Ezzaouia, Hatem

    2013-01-01

    The performance improvement of solar cells due to the formation of a porous silicon layer treated with rare earth (Ce, La) in the n + emitter of silicon n + /p junctions has been investigated. The photovoltaic properties of the cells with and without treatment of the porous silicon layer are compared. From the reflection measurements, it was shown that the cells with treated PS layers have lower reflectivity value compared to cell with untreated PS layer. The main result is that the photovoltaic energy conversion efficiency of solar cells can be enhanced by using the treated porous silicon layers with the rare earth (Ce, La) as anti-reflection coatings. -- Highlights: • The reduction of optical loss in silicon (c-Si) solar cells attracts the attention of many researches to achieve high efficiencies. • To attain this aim, the treated PS layers with rare earth (La, Ce) are suggested to be used as an (ARC) of c-Si solar cell. • The result showed a decrease in the optical losses which can explain the improved photovoltaic properties

  11. Improvement in photovoltaic properties of silicon solar cells with a doped porous silicon layer with rare earth (Ce, La) as antireflection coatings

    Energy Technology Data Exchange (ETDEWEB)

    Atyaoui, Malek, E-mail: atyaoui.malek@yahoo.fr [Laboratoire de Photovoltaïque, Centre de recherches et des technologies de l' energie, technopole de Borj-Cédria, PB:95, Hammam Lif 2050 (Tunisia); Dimassi, Wissem [Laboratoire de Photovoltaïque, Centre de recherches et des technologies de l' energie, technopole de Borj-Cédria, PB:95,Hammam Lif 2050 (Tunisia); Atyaoui, Atef [Laboratoire de traitement des eaux usées, Centre de recherches et des technologies des eaux, technopole de Borj-Cédria, PB: 273, Soliman 8020 (Tunisia); Elyagoubi, Jalel; Ouertani, Rachid; Ezzaouia, Hatem [Laboratoire de Photovoltaïque, Centre de recherches et des technologies de l' energie, technopole de Borj-Cédria, PB:95,Hammam Lif 2050 (Tunisia)

    2013-09-15

    The performance improvement of solar cells due to the formation of a porous silicon layer treated with rare earth (Ce, La) in the n{sup +} emitter of silicon n{sup +}/p junctions has been investigated. The photovoltaic properties of the cells with and without treatment of the porous silicon layer are compared. From the reflection measurements, it was shown that the cells with treated PS layers have lower reflectivity value compared to cell with untreated PS layer. The main result is that the photovoltaic energy conversion efficiency of solar cells can be enhanced by using the treated porous silicon layers with the rare earth (Ce, La) as anti-reflection coatings. -- Highlights: • The reduction of optical loss in silicon (c-Si) solar cells attracts the attention of many researches to achieve high efficiencies. • To attain this aim, the treated PS layers with rare earth (La, Ce) are suggested to be used as an (ARC) of c-Si solar cell. • The result showed a decrease in the optical losses which can explain the improved photovoltaic properties.

  12. Silicon Germanium Quantum Well Solar Cell

    Data.gov (United States)

    National Aeronautics and Space Administration — A single crystal SiGe has enormous potentials for high performance chips and solar cells. This project seeks to fabricate a rudimentary but 1st cut quantum-well...

  13. Improved performance of silicon-nanoparticle film-coated dye-sensitized solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Gupta, Ravindra Kumar; Bedja, Idriss M. [CRC, Department of Optometry, College of Applied Medical Sciences, King Saud University, P.O. Box 10219, Riyadh 11433 (Saudi Arabia); Aldwayyan, Abdullah Saleh [Department of Physics and Astronomy, College of Science, King Saud University, P.O. Box 2455, Riyadh 11451 (Saudi Arabia)

    2012-11-15

    Silicon (Si) nanoparticles with average size of 13 nm and orange-red luminescence under UV absorption were synthesized using electrochemical etching of silicon wafers. A film of Si nanoparticles with thickness of 0.75 {mu}m to 2.6 {mu}m was coated on the glass (TiO{sub 2} side) of a dye-sensitized solar cell (DSSC). The cell exhibited nearly 9% enhancement in power conversion efficiency ({eta}) at film thickness of {proportional_to}2.4 {mu}m under solar irradiation of 100 mW/cm{sup 2} (AM 1.5) with improved fill factor and short-circuit current density. This study revealed for the first time that the Si-nanoparticle film converting UV into visible light and helping in homogeneous irradiation, can be utilized for improving the efficiency of the DSSCs. (copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  14. Process control of high rate microcrystalline silicon based solar cell deposition by optical emission spectroscopy

    International Nuclear Information System (INIS)

    Kilper, T.; Donker, M.N. van den; Carius, R.; Rech, B.; Braeuer, G.; Repmann, T.

    2008-01-01

    Silicon thin-film solar cells based on microcrystalline silicon (μc-Si:H) were prepared in a 30 x 30 cm 2 plasma-enhanced chemical vapor deposition reactor using 13.56 or 40.68 MHz plasma excitation frequency. Plasma emission was recorded by optical emission spectroscopy during μc-Si:H absorber layer deposition at deposition rates between 0.5 and 2.5 nm/s. The time course of SiH * and H β emission indicated strong drifts in the process conditions particularly at low total gas flows. By actively controlling the SiH 4 gas flow, the observed process drifts were successfully suppressed resulting in a more homogeneous i-layer crystallinity along the growth direction. In a deposition regime with efficient usage of the process gas, the μc-Si:H solar cell efficiency was enhanced from 7.9 % up to 8.8 % by applying process control

  15. The silicon-silicon oxide multilayers utilization as intrinsic layer on pin solar cells

    International Nuclear Information System (INIS)

    Colder, H.; Marie, P.; Gourbilleau, F.

    2008-01-01

    Silicon nanostructures are promising candidate for the intrinsic layer on pin solar cells. In this work we report on new material: silicon-rich silicon oxide (SRSO) deposited by reactive magnetron sputtering of a pure silica target and an interesting structure: multilayers consisting of a stack of SRSO and pure silicon oxide layers. Two thicknesses of the SRSO sublayer, t SRSO , are studied 3 nm and 5 nm whereas the thickness of silica sublayer is maintaining at 3 nm. The presence of nanocrystallites of silicon, evidenced by X-Ray diffraction (XRD), leads to photoluminescence (PL) emission at room temperature due to the quantum confinement of the carriers. The PL peak shifts from 1.3 eV to 1.5 eV is correlated to the decreasing of t SRSO from 5 nm down to 3 nm. In the purpose of their potential utilization for i-layer, the optical properties are studied by absorption spectroscopy. The achievement a such structures at promising absorption properties. Moreover by favouring the carriers injection by the tunnel effect between silicon nanograins and silica sublayers, the multilayers seem to be interesting for solar cells

  16. Improvement in IBC-silicon solar cell performance by insertion of highly doped crystalline layer at heterojunction interfaces

    International Nuclear Information System (INIS)

    Bashiri, Hadi; Azim Karami, Mohammad; Mohammadnejad, Shahramm

    2017-01-01

    By inserting a thin highly doped crystalline silicon layer between the base region and amorphous silicon layer in an interdigitated back-contact (IBC) silicon solar cell, a new passivation layer is investigated. The passivation layer performance is characterized by numerical simulations. Moreover, the dependence of the output parameters of the solar cell on the additional layer parameters (doping concentration and thickness) is studied. By optimizing the additional passivation layer in terms of doping concentration and thickness, the power conversion efficiency could be improved by a factor of 2.5%, open circuit voltage is increased by 30 mV and the fill factor of the solar cell by 7.4%. The performance enhancement is achieved due to the decrease of recombination rate, a decrease in solar cell resistivity and improvement of field effect passivation at heterojunction interface. The above-mentioned results are compared with reported results of the same conventional interdigitated back-contact silicon solar cell structure. Furthermore, the effect of a-Si:H/c-Si interface defect density on IBC silicon solar cell parameters with a new passivation layer is studied. The additional passivation layer also reduces the sensitivity of output parameter of solar cell to interface defect density. (paper)

  17. Ultrathin Oxide Passivation Layer by Rapid Thermal Oxidation for the Silicon Heterojunction Solar Cell Applications

    OpenAIRE

    Lee, Youngseok; Oh, Woongkyo; Dao, Vinh Ai; Hussain, Shahzada Qamar; Yi, Junsin

    2012-01-01

    It is difficult to deposit extremely thin a-Si:H layer in heterojunction with intrinsic thin layer (HIT) solar cell due to thermal damage and tough process control. This study aims to understand oxide passivation mechanism of silicon surface using rapid thermal oxidation (RTO) process by examining surface effective lifetime and surface recombination velocity. The presence of thin insulating a-Si:H layer is the key to get high Voc by lowering the leakage current (I0) which improves the efficie...

  18. Influence of intermediate layers on the surface condition of laser crystallized silicon thin films and solar cell performance

    Energy Technology Data Exchange (ETDEWEB)

    Höger, Ingmar, E-mail: ingmar.hoeger@ipht-jena.de; Gawlik, Annett; Brückner, Uwe; Andrä, Gudrun [Leibniz-Institut für Photonische Technologien, PF 100239, 07702 Jena (Germany); Himmerlich, Marcel; Krischok, Stefan [Institut für Mikro-und Nanotechnologien, Technische Universität Ilmenau, PF 100565, 98684 Ilmenau (Germany)

    2016-01-28

    The intermediate layer (IL) between glass substrate and silicon plays a significant role in the optimization of multicrystalline liquid phase crystallized silicon thin film solar cells on glass. This study deals with the influence of the IL on the surface condition and the required chemical surface treatment of the crystallized silicon (mc-Si), which is of particular interest for a-Si:H heterojunction thin film solar cells. Two types of IL were investigated: sputtered silicon nitride (SiN) and a layer stack consisting of silicon nitride and silicon oxide (SiN/SiO). X-ray photoelectron spectroscopy measurements revealed the formation of silicon oxynitride (SiO{sub x}N{sub y}) or silicon oxide (SiO{sub 2}) layers at the surface of the mc-Si after liquid phase crystallization on SiN or SiN/SiO, respectively. We propose that SiO{sub x}N{sub y} formation is governed by dissolving nitrogen from the SiN layer in the silicon melt, which segregates at the crystallization front during crystallization. This process is successfully hindered, when additional SiO layers are introduced into the IL. In order to achieve solar cell open circuit voltages above 500 mV, a removal of the formed SiO{sub x}N{sub y} top layer is required using sophisticated cleaning of the crystallized silicon prior to a-Si:H deposition. However, solar cells crystallized on SiN/SiO yield high open circuit voltage even when a simple wet chemical surface treatment is applied. The implementation of SiN/SiO intermediate layers facilitates the production of mesa type solar cells with open circuit voltages above 600 mV and a power conversion efficiency of 10%.

  19. Mechanical grooving of oxidized porous silicon to reduce the reflectivity of monocrystalline silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Zarroug, A.; Dimassi, W.; Ouertani, R.; Ezzaouia, H. [Laboratoire de Photovoltaique, Centre des Recherches et des Technologies de l' Energie, BP. 95, Hammam-Lif 2050 (Tunisia)

    2012-10-15

    In this work, we are interested to use oxidized porous silicon (ox-PS) as a mask. So, we display the creating of a rough surface which enhances the absorption of incident light by solar cells and reduces the reflectivity of monocrystalline silicon (c-Si). It clearly can be seen that the mechanical grooving enables us to elaborate the texturing of monocrystalline silicon wafer. Results demonstrated that the application of a PS layer followed by a thermal treatment under O2 ambient easily gives us an oxide layer of uniform size which can vary from a nanometer to about ten microns. In addition, the Fourier transform infrared (FTIR) spectroscopy investigations of the PS layer illustrates the possibility to realize oxide layer as a mask for porous silicon. We found also that this simple and low cost method decreases the total reflectivity (copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  20. Silicon nanostructures for third generation photovoltaic solar cells

    International Nuclear Information System (INIS)

    Conibeer, Gavin; Green, Martin; Corkish, Richard; Cho, Young; Cho, Eun-Chel; Jiang, Chu-Wei; Fangsuwannarak, Thipwan; Pink, Edwin; Huang, Yidan; Puzzer, Tom; Trupke, Thorsten; Richards, Bryce; Shalav, Avi; Lin, Kuo-lung

    2006-01-01

    The concept of third generation photovoltaics is to significantly increase device efficiencies whilst still using thin film processes and abundant non-toxic materials. This can be achieved by circumventing the Shockley-Queisser limit for single band gap devices, using multiple energy threshold approaches. At University of NSW, as part of our work on Third Generation devices, we are using the energy confinement of silicon based quantum dot nanostructures to engineer wide band gap materials to be used as upper cell elements in Si based tandem cells. HRTEM data shows Si nanocrystal formation in oxide and nitride matrixes with a controlled nanocrystal size, grown by layered reactive sputtering and layered PECVD. Photoluminescence evidence for quantum confinement in the Si quantum dots in oxide agrees with the calculated increase in PL energy with reduction in dot size. Resistivity measurements with temperature give tentative proof of conduction and we are investigating junction formation in these materials. We are also using similar Si quantum dot structures in double barrier resonant tunneling structures for use in hot carrier solar cell contacts. These must collect carriers over a limited energy range. Negative differential resistance has been observed in room temperature I-V on these samples, a necessary proof of concept for selective energy filter contacts

  1. Morphology control and device optimization for efficient organic solar cells

    NARCIS (Netherlands)

    Gevaerts, Veronique

    2013-01-01

    Renewable energy is paramount for a sustainable global future. Solar cells convert solar light directly into electricity and are therefore of great interest in meeting the world’s energy demand. Currently crystalline silicon solar cells dominate the market. Solution processed organic solar cells can

  2. Silicon diffusion in aluminum for rear passivated solar cells

    International Nuclear Information System (INIS)

    Urrejola, Elias; Peter, Kristian; Plagwitz, Heiko; Schubert, Gunnar

    2011-01-01

    We show that the lateral spread of silicon in a screen-printed aluminum layer increases by (1.50±0.06) μm/ deg. C, when increasing the peak firing temperature within an industrially applicable range. In this way, the maximum spread limit of diffused silicon in aluminum is predictable and does not depend on the contact area size but on the firing temperature. Therefore, the geometry of the rear side pattern can influence not only series resistance losses within the solar cell but the process of contact formation itself. In addition, too fast cooling lead to Kirkendall void formations instead of an eutectic layer.

  3. The influence of passivation and photovoltaic properties of α-Si:H coverage on silicon nanowire array solar cells

    Science.gov (United States)

    2013-01-01

    Silicon nanowire (SiNW) arrays for radial p-n junction solar cells offer potential advantages of light trapping effects and quick charge collection. Nevertheless, lower open circuit voltages (Voc) lead to lower energy conversion efficiencies. In such cases, the performance of the solar cells depends critically on the quality of the SiNW interfaces. In this study, SiNW core-shell solar cells have been fabricated by growing crystalline silicon (c-Si) nanowires via the metal-assisted chemical etching method and by depositing hydrogenated amorphous silicon (α-Si:H) via the plasma-enhanced chemical vapor deposition (PECVD) method. The influence of deposition parameters on the coverage and, consequently, the passivation and photovoltaic properties of α-Si:H layers on SiNW solar cells have been analyzed. PMID:24059343

  4. Performance comparison between silicon solar panel and dye-sensitized solar panel in Malaysia

    Science.gov (United States)

    Hamed, N. K. A.; Ahmad, M. K.; Urus, N. S. T.; Mohamad, F.; Nafarizal, N.; Ahmad, N.; Soon, C. F.; Ameruddin, A. S.; Faridah, A. B.; Shimomura, M.; Murakami, K.

    2017-09-01

    In carrying out experimental research in performance between silicon solar panel and dye-sensitive solar panel, we have been developing a device and a system. This system has been developed consisting of controllers, hardware and software. This system is capable to get most of the input sources. If only need to change the main circuit and coding for a different source input value. This device is able to get the ambient temperature, surface temperature, surrounding humidity, voltage with load, current with load, voltage without load and current without load and save the data into external memory. This device is able to withstand the heat and rain as it was fabricated in a waterproof box. This experiment was conducted to examine the performance of both the solar panels which are capable to maintain their stability and performance. A conclusion based on data populated, the distribution of data for dye-sensitized solar panel is much better than silicon solar panel as dye-sensitized solar panel is very sensitive to heat and not depend only on midday where is that is the maximum ambient temperature for both solar panel as silicon solar panel only can give maximum and high output only when midday.

  5. Power Conversion Efficiency of Arylamine Organic Dyes for Dye-Sensitized Solar Cells (DSSCs) Explicit to Cobalt Electrolyte: Understanding the Structural Attributes Using a Direct QSPR Approach

    OpenAIRE

    Supratik Kar; Juganta K. Roy; Danuta Leszczynska; Jerzy Leszczynski

    2016-01-01

    Post silicon solar cell era involves light-absorbing dyes for dye-sensitized solar systems (DSSCs). Therefore, there is great interest in the design of competent organic dyes for DSSCs with high power conversion efficiency (PCE) to bypass some of the disadvantages of silicon-based solar cell technologies, such as high cost, heavy weight, limited silicon resources, and production methods that lead to high environmental pollution. The DSSC has the unique feature of a distance-dependent electron...

  6. Thermal system design and modeling of meniscus controlled silicon growth process for solar applications

    Science.gov (United States)

    Wang, Chenlei

    The direct conversion of solar radiation to electricity by photovoltaics has a number of significant advantages as an electricity generator. That is, solar photovoltaic conversion systems tap an inexhaustible resource which is free of charge and available anywhere in the world. Roofing tile photovoltaic generation, for example, saves excess thermal heat and preserves the local heat balance. This means that a considerable reduction of thermal pollution in densely populated city areas can be attained. A semiconductor can only convert photons with the energy of the band gap with good efficiency. It is known that silicon is not at the maximum efficiency but relatively close to it. There are several main parts for the photovoltaic materials, which include, single- and poly-crystalline silicon, ribbon silicon, crystalline thin-film silicon, amorphous silicon, copper indium diselenide and related compounds, cadmium telluride, et al. In this dissertation, we focus on melt growth of the single- and poly-crystalline silicon manufactured by Czochralski (Cz) crystal growth process, and ribbon silicon produced by the edge-defined film-fed growth (EFG) process. These two methods are the most commonly used techniques for growing photovoltaic semiconductors. For each crystal growth process, we introduce the growth mechanism, growth system design, general application, and progress in the numerical simulation. Simulation results are shown for both Czochralski and EFG systems including temperature distribution of the growth system, velocity field inside the silicon melt and electromagnetic field for the EFG growth system. Magnetic field is applied on Cz system to reduce the melt convection inside crucible and this has been simulated in our numerical model. Parametric studies are performed through numerical and analytical models to investigate the relationship between heater power levels and solidification interface movement and shape. An inverse problem control scheme is developed to

  7. Acceptable contamination levels in solar grade silicon: From feedstock to solar cell

    International Nuclear Information System (INIS)

    Hofstetter, J.; Lelievre, J.F.; Canizo, C.; Luque, A. del

    2009-01-01

    Ultimately, alternative ways of silicon purification for photovoltaic applications are developed and applied. There is an ongoing debate about what are the acceptable contamination levels within the purified silicon feedstock to specify the material as solar grade silicon. Applying a simple model and making some additional assumptions, we calculate the acceptable contamination levels of different characteristic impurities for each fabrication step of a typical industrial mc-Si solar cell. The acceptable impurity concentrations within the finished solar cell are calculated for SRH recombination exclusively and under low injection conditions. It is assumed that during solar cell fabrication impurity concentrations are only altered by a gettering step. During the crystallization process, impurity segregation at the solid-liquid interface and at extended defects are taken into account. Finally, the initial contamination levels allowed within the feedstock are deduced. The acceptable concentration of iron in the finished solar cell is determined to be 9.7x10 -3 ppma whereas the concentration in the silicon feedstock can be as high as 12.5 ppma. In comparison, the titanium concentration admitted in the solar cell is calculated to be 2.7x10 -4 ppma and the allowed concentration of 2.2x10 -2 ppma in the feedstock is only two orders of magnitude higher. Finally, it is shown theoretically and experimentally that slow cooling rates can lead to a decrease of the interstitial Fe concentration and thus relax the purity requirements in the feedstock.

  8. The effect of diffusion induced lattice stress on the open-circuit voltage in silicon solar cells

    Science.gov (United States)

    Weizer, V. G.; Godlewski, M. P.

    1984-01-01

    It is demonstrated that diffusion induced stresses in low resistivity silicon solar cells can significantly reduce both the open-circuit voltage and collection efficiency. The degradation mechanism involves stress induced changes in both the minority carrier mobility and the diffusion length. Thermal recovery characteristics indicate that the stresses are relieved at higher temperatures by divacancy flow (silicon self diffusion). The level of residual stress in as-fabricated cells was found to be negligible in the cells tested.

  9. Progress in thin-film silicon solar cells based on photonic-crystal structures

    Science.gov (United States)

    Ishizaki, Kenji; De Zoysa, Menaka; Tanaka, Yoshinori; Jeon, Seung-Woo; Noda, Susumu

    2018-06-01

    We review the recent progress in thin-film silicon solar cells with photonic crystals, where absorption enhancement is achieved by using large-area resonant effects in photonic crystals. First, a definitive guideline for enhancing light absorption in a wide wavelength range (600–1100 nm) is introduced, showing that the formation of multiple band edges utilizing higher-order modes confined in the thickness direction and the introduction of photonic superlattice structures enable significant absorption enhancement, exceeding that observed for conventional random scatterers. Subsequently, experimental evidence of this enhancement is demonstrated for a variety of thin-film Si solar cells: ∼500-nm-thick ultrathin microcrystalline silicon cells, few-µm-thick microcrystalline silicon cells, and ∼20-µm-thick thin single-crystalline silicon cells. The high short-circuit current densities and/or efficiencies observed for each cell structure confirm the effectiveness of using multiple band-edge resonant modes of photonic crystals for enhancing broadband absorption in actual solar cells.

  10. Plasma immersion ion implantation of boron for ribbon silicon solar cells

    Directory of Open Access Journals (Sweden)

    Derbouz K.

    2013-09-01

    Full Text Available In this work, we report for the first time on the solar cell fabrication on n-type silicon RST (for Ribbon on Sacrificial Template using plasma immersion ion implantation. The experiments were also carried out on FZ silicon as a reference. Boron was implanted at energies from 10 to 15 kV and doses from 1015 to 1016 cm-2, then activated by a thermal annealing in a conventional furnace at 900 and 950 °C for 30 min. The n+ region acting as a back surface field was achieved by phosphorus spin-coating. The frontside boron emitter was passivated either by applying a 10 nm deposited SiOX plasma-enhanced chemical vapor deposition (PECVD or with a 10 nm grown thermal oxide. The anti-reflection coating layer formed a 60 nm thick SiNX layer. We show that energies less than 15 kV and doses around 5 × 1015 cm-2 are appropriate to achieve open circuit voltage higher than 590 mV and efficiency around 16.7% on FZ-Si. The photovoltaic performances on ribbon silicon are so far limited by the bulk quality of the material and by the quality of the junction through the presence of silicon carbide precipitates at the surface. Nevertheless, we demonstrate that plasma immersion ion implantation is very promising for solar cell fabrication on ultrathin silicon wafers such as ribbons.

  11. Increasing the efficiency of solar thermal panels

    Science.gov (United States)

    Dobrnjac, M.; Latinović, T.; Dobrnjac, S.; Živković, P.

    2016-08-01

    The popularity of solar heating systems is increasing for several reasons. These systems are reliable, adaptable and pollution-free, because the renewable solar energy is used. There are many variants of solar systems in the market mainly constructed with copper pipes and absorbers with different quality of absorption surface. Taking into account the advantages and disadvantages of existing solutions, in order to increase efficiency and improve the design of solar panel, the innovative solution has been done. This new solar panel presents connection of an attractive design and the use of constructive appropriate materials with special geometric shapes. Hydraulic and thermotechnical tests that have been performed on this panel showed high hydraulic and structural stability. Further development of the solar panel will be done in the future in order to improve some noticed disadvantages.

  12. Pathway to low-cost metallization of silicon solar cell through understanding of the silicon metal interface and plating chemistry

    International Nuclear Information System (INIS)

    Ebong, Abasifreke

    2014-01-01

    Metallization is crucial to silicon solar cell performance. It is the second most expensive process step in the fabrication of a solar cell. In order to reduce the cost of solar cell, the metallization cost has to be cut down by using less metal without compromising the efficiency. Screen-printing has been used in metallizing the commercial solar cell because of the high throughput and low cost at the expense of performance. However, because of the variability in the screen-printed gridlines, the amount of Ag metal used cannot be controlled. More so, the dependence of the contact resistance on doping necessitates the use of low sheet resistance emitters, which exacerbates losses in the blue response and hence the efficiency. To balance the contact resistance and improve blue response, several approaches have been undertaken including, use of Ag pastes incorporating nanoparticle glass frits that will not diffuse excessively into a lightly doped emitter, Ni plating on lightly doped emitter through SiNx dielectric plus NiSi formation followed by Cu and/or Ag plating, light induced plating (LIP) of Ag or Cu on fired through dielectric metal seed layers formed by aerosol or inkjet or screen-printing. All these approaches require excellent adhesion and gridline conductivity to minimize the total series resistance, which impedes the collection of electrons. This paper presents the issues and the pathway to achieving high efficiency using low cost metallization technology involving inkjet-printed Ag fine gridline having 38 μm width and 3 μm height fired through the SiNx followed by Ni and Cu plating. A comprehensive analysis of silicon/metal interface, using high precision microscopy, has shown that the investigated metallization technology is appropriate for the longevity of the device

  13. Optimization of oxidation processes to improve crystalline silicon solar cell emitters

    Directory of Open Access Journals (Sweden)

    L. Shen

    2014-02-01

    Full Text Available Control of the oxidation process is one key issue in producing high-quality emitters for crystalline silicon solar cells. In this paper, the oxidation parameters of pre-oxidation time, oxygen concentration during pre-oxidation and pre-deposition and drive-in time were optimized by using orthogonal experiments. By analyzing experimental measurements of short-circuit current, open circuit voltage, series resistance and solar cell efficiency in solar cells with different sheet resistances which were produced by using different diffusion processes, we inferred that an emitter with a sheet resistance of approximately 70 Ω/□ performed best under the existing standard solar cell process. Further investigations were conducted on emitters with sheet resistances of approximately 70 Ω/□ that were obtained from different preparation processes. The results indicate that emitters with surface phosphorus concentrations between 4.96 × 1020 cm−3 and 7.78 × 1020 cm−3 and with junction depths between 0.46 μm and 0.55 μm possessed the best quality. With no extra processing, the final preparation of the crystalline silicon solar cell efficiency can reach 18.41%, which is an increase of 0.4%abs compared to conventional emitters with 50 Ω/□ sheet resistance.

  14. Design principle for absorption enhancement with nanoparticles in thin-film silicon solar cells

    International Nuclear Information System (INIS)

    Xu, Yuanpei; Xuan, Yimin

    2015-01-01

    The use of nanoparticles in solar cells has created many controversies. In this paper, different mechanisms of nanoparticles with different materials with diameters varying from 50 to 200 nm, surface coverage at 5, 20, and 60 %, and different locations are analyzed systematically for efficient light trapping in a thin-film c-Si solar cell. Mie theory and the finite difference time domain method are used for analysis to give a design principle with nanoparticles for the solar cell application. Metals exhibit plasmonic resonances and angular scattering, while dielectrics show anti-reflection and scattering in the incident direction. A table is given to summarize the advantages and disadvantages in different conditions. The silicon absorption enhancement with nanoparticles on top is mainly in the shorter wavelengths below 700 nm, and both Al and SiO 2 nanoparticles with diameter around 100 nm show the most significant enhancement. The silicon absorption enhancement with embedded nanoparticles takes place in the longer wavelengths over 700 nm, and Ag and SiO 2 nanoparticles with larger diameter around 200 nm perform better. However, the light absorbed by Ag nanoparticles will be converted to heat and will lead to decrease in cell efficiency; hence, the choice of metallic nanoparticles in applications to solar cells should be carefully considered. The design principle proposed in this work gives a guideline by choosing reasonable parameters for the different requirements in the application of thin-film solar cells

  15. Photoluminescence in large fluence radiation irradiated space silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Hisamatsu, Tadashi; Kawasaki, Osamu; Matsuda, Sumio [National Space Development Agency of Japan, Tsukuba, Ibaraki (Japan). Tsukuba Space Center; Tsukamoto, Kazuyoshi

    1997-03-01

    Photoluminescence spectroscopy measurements were carried out for silicon 50{mu}m BSFR space solar cells irradiated with 1MeV electrons with a fluence exceeding 1 x 10{sup 16} e/cm{sup 2} and 10MeV protons with a fluence exceeding 1 x 10{sup 13} p/cm{sup 2}. The results were compared with the previous result performed in a relative low fluence region, and the radiation-induced defects which cause anomalous degradation of the cell performance in such large fluence regions were discussed. As far as we know, this is the first report which presents the PL measurement results at 4.2K of the large fluence radiation irradiated silicon solar cells. (author)

  16. Photo stability Assessment in Amorphous-Silicon Solar Cells

    International Nuclear Information System (INIS)

    Gandia, J. J.; Carabe, J.; Fabero, F.; Jimenez, R.; Rivero, J. M.

    1999-01-01

    The present status of amorphous-silicon-solar-cell research and development at CIEMAT requires the possibility to characterise the devices prepared from the point of view of their stability against sunlight exposure. Therefore a set of tools providing such a capacity has been developed. Together with an introduction to photovoltaic applications of amorphous silicon and to the photodegradation problem, the present work describes the process of setting up these tools. An indoor controlled photodegradation facility has been designed and built, and a procedure has been developed for the measurement of J-V characterisation in well established conditions. This method is suitable for all kinds of solar cells, even for those for which no model is still available. The photodegradation and characterisation of some cells has allowed to validate both the new testing facility and method. (Author) 14 refs

  17. Junction Transport in Epitaxial Film Silicon Heterojunction Solar Cells: Preprint

    Energy Technology Data Exchange (ETDEWEB)

    Young, D. L.; Li, J. V.; Teplin, C. W.; Stradins, P.; Branz, H. M.

    2011-07-01

    We report our progress toward low-temperature HWCVD epitaxial film silicon solar cells on inexpensive seed layers, with a focus on the junction transport physics exhibited by our devices. Heterojunctions of i/p hydrogenated amorphous Si (a-Si) on our n-type epitaxial crystal Si on n++ Si wafers show space-charge-region recombination, tunneling or diffusive transport depending on both epitaxial Si quality and the applied forward voltage.

  18. Characterization of HEM silicon for solar cells. [Heat Exchanger Method

    Science.gov (United States)

    Dumas, K. A.; Khattak, C. P.; Schmid, F.

    1981-01-01

    The Heat Exchanger Method (HEM) is a promising low-cost ingot casting process for material used for solar cells. This is the only method that is capable of casting single crystal ingots with a square cross section using a directional solidification technique. This paper describes the chemical, mechanical and electrical properties of the HEM silicon material as a function of position within the ingot.

  19. Technology for the large-scale production of multi-crystalline silicon solar cells and modules

    International Nuclear Information System (INIS)

    Weeber, A.W.; De Moor, H.H.C.

    1997-06-01

    In cooperation with Shell Solar Energy (formerly R and S Renewable Energy Systems) and the Research Institute for Materials of the Catholic University Nijmegen the Netherlands Energy Research Foundation (ECN) plans to develop a competitive technology for the large-scale manufacturing of solar cells and solar modules on the basis of multi-crystalline silicon. The project will be carried out within the framework of the Economy, Ecology and Technology (EET) program of the Dutch ministry of Economic Affairs and the Dutch ministry of Education, Culture and Sciences. The aim of the EET-project is to reduce the costs of a solar module by 50% by means of increasing the conversion efficiency as well as the development of cheap processes for large-scale production

  20. EFFICIENCY AND LIFETIME OF SOLAR COLLECTORS FOR SOLAR HEATING PLANTS

    DEFF Research Database (Denmark)

    The 12.5 m² flat plate solar collector HT, today marketed by Arcon Solvarme A/S, has been used in solar heating plants in Scandinavia since 1983. The collector is designed to operate in a temperature interval between 40°C and 90°C. The efficiency of the collector has been strongly improved since...... it was introduced on the market. The paper will present the increase of the efficiency of the collector due to technical improvements since 1983. Further, measurements from the spring of 2009 of the efficiency of two HT collectors, which have been in operation in the solar heating plant Ottrupgaard, Skørping......, Denmark since 1994 with a constant high flow rate and in the solar heating plant Marstal, Denmark since 1996 with a variable flow rate, will be presented. The efficiencies will be compared to the efficiencies of the collectors when they were first installed in the solar heating plants. The measurements...

  1. EFFICIENCY AND LIFETIME OF SOLAR COLLECTORS FOR SOLAR HEATING PLANTS

    DEFF Research Database (Denmark)

    Fan, Jianhua; Chen, Ziqian; Furbo, Simon

    2009-01-01

    The 12.5 m² flat plate solar collector HT, today marketed by Arcon Solvarme A/S, has been used in solar heating plants in Scandinavia since 1983. The collector is designed to operate in a temperature interval between 40°C and 90°C. The efficiency of the collector has been strongly improved since...... it was introduced on the market. The paper will present the increase of the efficiency of the collector due to technical improvements since 1983. Further, measurements from the spring of 2009 of the efficiency of two HT collectors, which have been in operation in the solar heating plant Ottrupgaard, Skørping......, Denmark since 1994 with a constant high flow rate and in the solar heating plant Marstal, Denmark since 1996 with a variable flow rate, will be presented. The efficiencies will be compared to the efficiencies of the collectors when they were first installed in the solar heating plants. The measurements...

  2. Selective deposition contact patterning using atomic layer deposition for the fabrication of crystalline silicon solar cells

    International Nuclear Information System (INIS)

    Cho, Young Joon; Shin, Woong-Chul; Chang, Hyo Sik

    2014-01-01

    Selective deposition contact (SDC) patterning was applied to fabricate the rear side passivation of crystalline silicon (Si) solar cells. By this method, using screen printing for contact patterning and atomic layer deposition for the passivation of Si solar cells with Al 2 O 3 , we produced local contacts without photolithography or any laser-based processes. Passivated emitter and rear-contact solar cells passivated with ozone-based Al 2 O 3 showed, for the SDC process, an up-to-0.7% absolute conversion-efficiency improvement. The results of this experiment indicate that the proposed method is feasible for conversion-efficiency improvement of industrial crystalline Si solar cells. - Highlights: • We propose a local contact formation process. • Local contact forms a screen print and an atomic layer deposited-Al 2 O 3 film. • Ozone-based Al 2 O 3 thin film was selectively deposited onto patterned silicon. • Selective deposition contact patterning method can increase cell-efficiency by 0.7%

  3. The challenge of screen printed Ag metallization on nano-scale poly-silicon passivated contacts for silicon solar cells

    Science.gov (United States)

    Jiang, Lin; Song, Lixin; Yan, Li; Becht, Gregory; Zhang, Yi; Hoerteis, Matthias

    2017-08-01

    Passivated contacts can be used to reduce metal-induced recombination for higher energy conversion efficiency for silicon solar cells, and are obtained increasing attentions by PV industries in recent years. The reported thicknesses of passivated contact layers are mostly within tens of nanometer range, and the corresponding metallization methods are realized mainly by plating/evaporation technology. This high cost metallization cannot compete with the screen printing technology, and may affect its market potential comparing with the presently dominant solar cell technology. Very few works have been reported on screen printing metallization on passivated contact solar cells. Hence, there is a rising demand to realize screen printing metallization technology on this topic. In this work, we investigate applying screen printing metallization pastes on poly-silicon passivated contacts. The critical challenge for us is to build low contact resistance that can be competitive to standard technology while restricting the paste penetrations within the thin nano-scale passivated contact layers. The contact resistivity of 1.1mohm-cm2 and the open circuit voltages > 660mV are achieved, and the most appropriate thickness range is estimated to be around 80 150nm.

  4. Reduced annealing temperatures in silicon solar cells

    Science.gov (United States)

    Weinberg, I.; Swartz, C. K.

    1981-01-01

    Cells irradiated to a fluence of 5x10,000,000,000,000/square cm showed short circuit current on annealing at 200 C, with complete annealing occurring at 275 C. Cells irradiated to 100,000,000,000,000/square cm showed a reduction in annealing temperature from the usual 500 to 300 C. Annealing kinetic studies yield an activation energy of (1.5 + or - 2) eV for the low fluence, low temperature anneal. Comparison with activation energies previously obtained indicate that the presently obtained activation energy is consistent with the presence of either the divacancy or the carbon interstitial carbon substitutional pair, a result which agrees with the conclusion based on defect behavior in boron-doped silicon.

  5. Enhancement in photovoltaic properties of silicon solar cells by surface plasmon effect of palladium nanoparticles

    Science.gov (United States)

    Atyaoui, Malek; Atyaoui, Atef; Khalifa, Marwen; Elyagoubi, Jalel; Dimassi, Wissem; Ezzaouia, Hatem

    2016-04-01

    This work presents the surface Plasmon effect of Palladium nanoparticles (Pd NPs) on the photovoltaic properties of silicon solar cells. Pd NPs were deposited on the p-type silicon base of the n+/p junction using a chemical deposition method in an aqueous solution containing Palladium (II) Nitrate (PdNO3)2 and Ammonium Hydroxide (NH4OH) followed by a thermal treatment at 500 °C under nitrogen atmosphere. Chemical composition and surface morphology of the treated silicon base were examined by energy dispersive X-ray (EDX) spectroscopy, scanning electronic microscopy (SEM) and Atomic Force Microscopy (AFM). The effect of the deposited Pd NPs on the electrical properties was evaluated by the internal quantum efficiency (IQE) and current-voltage (I-V) measurements. The results indicate that the formation of the Pd NPs is accompanied by an enhanced light absorption and improved photovoltaic parameters.

  6. Grooving of grain boundaries in multicrystalline silicon: Effect on solar cell performance

    International Nuclear Information System (INIS)

    Dimassi, W.; Bouaicha, M.; Nouri, H.; Boujmil, M.F.; Ben Nasrallah, S.; Bessais, B.

    2006-01-01

    In this work, we investigate the effect of grooving of grain boundaries (GB) in multicrystalline silicon using chemical etching in HF/HNO 3 solutions. The grain boundaries were grooved in order to reduce the area of these highly recombining regions. Using optimized conditions, grooved GBs enable deep phosphorus diffusion and deep metallic contacts. As a result, the internal quantum efficiency (IQE), and the I-V characteristics under the dark and AM1.5 illumination were improved. It was also observed a reduction of the GB recombination velocity, which was deduced from light-beam-induced-current (LBIC) measurements. Such grooving in multicrystalline silicon enables passivation of GB-related defects. These results are discussed and compared to solar cells based on untreated multicrystalline silicon wafers

  7. Light trapping with plasmonic back contacts in thin-film silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Paetzold, Ulrich Wilhelm

    2013-02-08

    Trapping light in silicon solar cells is essential as it allows an increase in the absorption of incident sunlight in optically thin silicon absorber layers. This way, the costs of the solar cells can be reduced by lowering the material consumption and decreasing the physical constraints on the material quality. In this work, plasmonic light trapping with Ag back contacts in thin-film silicon solar cells is studied. Solar cell prototypes with plasmonic back contacts are presented along with optical simulations of these devices and general design considerations of plasmonic back contacts. Based on three-dimensional electromagnetic simulations, the conceptual design of plasmonic nanostructures on Ag back contacts in thin-film silicon solar cells is studied in this work. Optimizations of the nanostructures regarding their ability to scatter incident light at low optical losses into large angles in the silicon absorber layers of the thin-film silicon solar cells are presented. Geometrical parameters as well as the embedding dielectric layer stack of the nanostructures on Ag layers are varied. Periodic as well as isolated hemispherical Ag nanostructures of dimensions above 200 nm are found to scatter incident light at high efficiencies and low optical losses. Hence, these nanostructures are of interest for light trapping in solar cells. In contrast, small Ag nanostructures of dimension below 100 nm are found to induce optical losses. At the surface of randomly textured Ag back contacts small Ag nanostructures exist which induce optical losses. In this work, the relevance of these localized plasmon induced optical losses as well as optical losses caused by propagating plasmons are investigated with regard to the reflectance of the textured back contacts. In state-of-the-art solar cells, the plasmon-induced optical losses are shifted out of the relevant wavelength range by incorporating a ZnO:Al interlayer of low refractive index at the back contact. The additional but

  8. Extraordinary Light-Trapping Enhancement in Silicon Solar Cell Patterned with Graded Photonic Super-Crystals

    Directory of Open Access Journals (Sweden)

    Safaa Hassan

    2017-12-01

    Full Text Available Light-trapping enhancement in newly discovered graded photonic super-crystals (GPSCs with dual periodicity and dual basis is herein explored for the first time. Broadband, wide-incident-angle, and polarization-independent light-trapping enhancement was achieved in silicon solar cells patterned with these GPSCs. These super-crystals were designed by multi-beam interference, rendering them flexible and efficient. The optical response of the patterned silicon solar cell retained Bloch-mode resonance; however, light absorption was greatly enhanced in broadband wavelengths due to the graded, complex unit super-cell nanostructures, leading to the overlap of Bloch-mode resonances. The broadband, wide-angle light coupling and trapping enhancement mechanism are understood to be due to the spatial variance of the index of refraction, and this spatial variance is due to the varying filling fraction, the dual basis, and the varying lattice constants in different directions.

  9. Organic-inorganic halide perovskite/crystalline silicon four-terminal tandem solar cells

    Czech Academy of Sciences Publication Activity Database

    Löper, P.; Moon, S.J.; de Nicolas, S.M.; Niesen, B.; Ledinský, Martin; Nicolay, S.; Bailat, J.; Yum, J. H.; De Wolf, S.; Ballif, C.

    2015-01-01

    Roč. 17, č. 3 (2015), s. 1619-1629 ISSN 1463-9076 R&D Projects: GA MŠk(CZ) LM2011026 Institutional support: RVO:68378271 Keywords : perovskites * solar cells * silicon solar cells * silicon heterojunction solar cells * photovoltaics Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 4.449, year: 2015

  10. Pump efficiency in solar-energy systems

    Science.gov (United States)

    1978-01-01

    Study investigates characteristics of typical off-the-shelf pumping systems that might be used in solar systems. Report includes discussion of difficulties in predicting pump efficiency from manufacturers' data. Sample calculations are given. Peak efficiencies, flow-rate control, and noise levels are investigated. Review or theory of pumps types and operating characteristics is presented.

  11. The dark side of silicon energy efficient computing in the dark silicon era

    CERN Document Server

    Liljeberg, Pasi; Hemani, Ahmed; Jantsch, Axel; Tenhunen, Hannu

    2017-01-01

    This book presents the state-of-the art of one of the main concerns with microprocessors today, a phenomenon known as "dark silicon". Readers will learn how power constraints (both leakage and dynamic power) limit the extent to which large portions of a chip can be powered up at a given time, i.e. how much actual performance and functionality the microprocessor can provide. The authors describe their research toward the future of microprocessor development in the dark silicon era, covering a variety of important aspects of dark silicon-aware architectures including design, management, reliability, and test. Readers will benefit from specific recommendations for mitigating the dark silicon phenomenon, including energy-efficient, dedicated solutions and technologies to maximize the utilization and reliability of microprocessors. Enables readers to understand the dark silicon phenomenon and why it has emerged, including detailed analysis of its impacts; Presents state-of-the-art research, as well as tools for mi...

  12. The CRRES high efficiency solar panel

    International Nuclear Information System (INIS)

    Trumble, T.M.

    1991-01-01

    This paper reports on the High Efficiency Solar Panel (HESP) experiments which is to provide both engineering and scientific information concerning the effects of space radiation on advanced gallium arsenide (GaAs) solar cells. The HESP experiment consists of an ambient panel, and annealing panel and a programmable load. This experiment, in conjunction with the radiation measurement experiments abroad the CREES, provides the first opportunity to simultaneously measure the trapped radiation belts and the results of radiation damage to solar cells. The engineering information will result in a design guide for selecting the optimum solar array characteristics for different orbits and different lifetimes. The scientific information will provide both correlation of laboratory damage effects to space damage effects and a better model for predicting effective solar cell panel lifetimes

  13. Effect of UV irradiations on the structural and optical features of porous silicon: application in silicon solar cells

    International Nuclear Information System (INIS)

    Aouida, S.; Saadoun, M.; Boujmil, M.F.; Ben Rabha, M.; Bessaies, B.

    2004-01-01

    The aim of this paper is to investigate the structural and optical stability of porous silicon layers (PSLs) planned to be used in silicon solar cells technology. The PSLs were prepared by a HNO 3 /HF vapor etching (VE) based method. Fourier transform infrared (FT-IR) spectroscopy shows that fresh VE-based PSLs contain N-H and Si-F bonds related to a ammonium hexafluorosilicate (NH 4 ) 2 SiF 6 minor phase, and conventional Si-H x and Si-O x bonds. Free air exposures of PSLs without and with UV irradiation lead to oxidation or photo-oxidation of the porous layer, respectively. FT-IR characterisation of the PSLs shows that UV irradiations modify the transformation kinetics replacing instable Si-H x by Si-O x or Si-O-H bonds. When fresh PSLs undergo free air oxidation within 7 days, the surface reflectivity decreases from 10 to about 8%, while it drops to about 4% when a 10 min free air UV irradiation is applied. Long periods of free air oxidation do not ensure the reflectivity to be stable, whereas it becomes stable after only 10 min of UV irradiation. This behaviour was explained taking into account the kinetic differences between oxidation with and without UV irradiation. Fresh VE-based PSLs were found to improve efficiently the photovoltaic (PV) characteristics of crystalline silicon solar cells. The passivating action of VE-based PSLs was discussed. An improvement of the PV performances was observed solely for stable oxidized porous silicon (PS) structures obtained from UV irradiations

  14. 14th Workshop on Crystalline Silicon Solar Cells& Modules: Materials and Processes; Extended Abstracts and Papers

    Energy Technology Data Exchange (ETDEWEB)

    Sopori, B. L.

    2004-08-01

    The 14th Workshop will provide a forum for an informal exchange of technical and scientific information between international researchers in the photovoltaic and relevant non-photovoltaic fields. It will offer an excellent opportunity for researchers in private industry and at universities to prioritize mutual needs for future collaborative research. The workshop is intended to address the fundamental properties of PV silicon, new solar cell designs, advanced solar cell processing techniques, and cell-related module issues. A combination of oral presentations by invited speakers, poster sessions, and discussion sessions will review recent advances in crystal growth, new cell designs, new processes and process characterization techniques, cell fabrication approaches suitable for future manufacturing demands, and solar cell encapsulation. This year's theme, ''Crystalline Si Solar Cells: Leapfrogging the Barriers,'' reflects the continued success of crystalline Si PV in overcoming technological barriers to improve solar cell performance and lower the cost of Si PV. The workshop will consist of presentations by invited speakers, followed by discussion sessions. In addition, there will be two poster sessions presenting the latest research and development results. Some presentations will address recent technologies in the microelectronics field that may have a direct bearing on PV. The sessions will include: Advances in crystal growth and material issues; Impurities and defects; Dynamics during device processing; Passivation; High-efficiency Si solar cells; Advanced processing; Thin Si solar cells; and Solar cell reliability and module issues.

  15. Towards Cost-Effective Crystalline Silicon Based Flexible Solar Cells: Integration Strategy by Rational Design of Materials, Process, and Devices

    KAUST Repository

    Bahabry, Rabab R.

    2017-11-30

    The solar cells market has an annual growth of more than 30 percent over the past 15 years. At the same time, the cost of the solar modules diminished to meet both of the rapid global demand and the technological improvements. In particular for the crystalline silicon solar cells, the workhorse of this technology. The objective of this doctoral thesis is enhancing the efficiency of c-Si solar cells while exploring the cost reduction via innovative techniques. Contact metallization and ultra-flexible wafer based c-Si solar cells are the main areas under investigation. First, Silicon-based solar cells typically utilize screen printed Silver (Ag) metal contacts which affect the optimal electrical performance. To date, metal silicide-based ohmic contacts are occasionally used for the front contact grid lines. In this work, investigation of the microstructure and the electrical characteristics of nickel monosilicide (NiSi) ohmic contacts on the rear side of c-Si solar cells has been carried out. Significant enhancement in the fill factor leading to increasing the total power conversion efficiency is observed. Second, advanced classes of modern application require a new generation of versatile solar cells showcasing extreme mechanical resilience. However, silicon is a brittle material with a fracture strains <1%. Highly flexible Si-based solar cells are available in the form thin films which seem to be disadvantageous over thick Si solar cells due to the reduction of the optical absorption with less active Si material. Here, a complementary metal oxide semiconductor (CMOS) technology based integration strategy is designed where corrugation architecture to enable an ultra-flexible solar cell module from bulk mono-crystalline silicon solar wafer with 17% efficiency. This periodic corrugated array benefits from an interchangeable solar cell segmentation scheme which preserves the active silicon thickness and achieves flexibility via interdigitated back contacts. These cells

  16. Silicon homo-heterojunction solar cells: A promising candidate to realize high performance more stably

    Directory of Open Access Journals (Sweden)

    Miao Tan

    2017-08-01

    Full Text Available We have investigated the influences of diverse physical parameters on the performances of a silicon homo-heterojunction (H-H solar cell, which encompasses both homojunction and heterojunction, together with their underlying mechanisms by the aid of AFORS-HET simulation. It is found that the performances of H-H solar cell are less sensitive to (i the work function of the transparent conductive oxide layer, (ii the interfacial density of states at the front hydrogenated amorphous silicon/crystalline silicon (a-Si:H/c-Si interface, (iii the peak dangling bond defect densities within the p-type a-Si:H (p-a-Si:H layer, and (iv the doping concentration of the p-a-Si:H layer, when compared to that of the conventional heterojunction with intrinsic thin layer (HIT counterparts. These advantages are due to the fact that the interfacial recombination and the recombination within the a-Si:H region are less affected by all the above parameters, which fundamentally benefit from the field-effect passivation of the homojunction. Therefore, the design of H-H structure can provide an opportunity to produce high-efficiency solar cells more stably.

  17. Back scattering involving embedded silicon nitride (SiN) nanoparticles for c-Si solar cells

    Science.gov (United States)

    Ghosh, Hemanta; Mitra, Suchismita; Siddiqui, M. S.; Saxena, A. K.; Chaudhuri, Partha; Saha, Hiranmay; Banerjee, Chandan

    2018-04-01

    A novel material, structure and method of synthesis for dielectric light trapping have been presented in this paper. First, the light scattering behaviour of silicon nitride nanoparticles have been theoretically studied in order to find the optimized size for dielectric back scattering by FDTD simulations from Lumerical Inc. The optical results have been used in electrical analysis and thereby, estimate the effect of nanoparticles on efficiency of the solar cells depending on substrate thickness. Experimentally, silicon nitride (SiN) nanoparticles have been formed using hydrogen plasma treatment on SiN layer deposited by Plasma Enhanced Chemical Vapour Deposition (PECVD). The size and area coverage of the nanoparticles were controlled by varying the working pressure, power density and treatment duration. The nanoparticles were integrated with partial rear contact c-Si solar cells as dielectric back reflector structures for the light trapping in thin silicon solar cells. Experimental results revealed the increases of current density by 2.7% in presence of SiN nanoparticles.

  18. Silicon homo-heterojunction solar cells: A promising candidate to realize high performance more stably

    Science.gov (United States)

    Tan, Miao; Zhong, Sihua; Wang, Wenjie; Shen, Wenzhong

    2017-08-01

    We have investigated the influences of diverse physical parameters on the performances of a silicon homo-heterojunction (H-H) solar cell, which encompasses both homojunction and heterojunction, together with their underlying mechanisms by the aid of AFORS-HET simulation. It is found that the performances of H-H solar cell are less sensitive to (i) the work function of the transparent conductive oxide layer, (ii) the interfacial density of states at the front hydrogenated amorphous silicon/crystalline silicon (a-Si:H/c-Si) interface, (iii) the peak dangling bond defect densities within the p-type a-Si:H (p-a-Si:H) layer, and (iv) the doping concentration of the p-a-Si:H layer, when compared to that of the conventional heterojunction with intrinsic thin layer (HIT) counterparts. These advantages are due to the fact that the interfacial recombination and the recombination within the a-Si:H region are less affected by all the above parameters, which fundamentally benefit from the field-effect passivation of the homojunction. Therefore, the design of H-H structure can provide an opportunity to produce high-efficiency solar cells more stably.

  19. Phosphorus Diffusion Gettering Efficacy in Upgraded Metallurgical-Grade Solar Silicon

    Science.gov (United States)

    Jiménez, A.; del Cañizo, C.; Cid, C.; Peral, A.

    2018-05-01

    In the context of the continuous price reduction in photovoltaics (PV) in recent years, Si feedstock continues to be a relevant component in the cost breakdown of a PV module, highlighting the need for low-cost, low-capital expenditure (CAPEX) silicon technologies to further reduce this cost component. Upgraded metallurgical-grade silicon (UMG Si) has recently received much attention, improving its quality and even attaining, in some cases, solar cell efficiencies similar to those of conventional material. However, some technical challenges still have to be addressed when processing this material to compensate efficiently for the high content of impurities and contaminants. Adaptation of a conventional solar cell process to monocrystalline UMG Si wafers has been studied in this work. In particular, a tailored phosphorus diffusion gettering step followed by a low-temperature anneal at 700°C was implemented, resulting in enhanced bulk lifetime and emitter recombination properties. In spite of the need for further research and material optimization, UMG Si wafers were successfully processed, achieving efficiencies in the range of 15% for a standard laboratory solar cell process with aluminum back surface field.

  20. Design and optimization of Ag-dielectric core-shell nanostructures for silicon solar cells

    Directory of Open Access Journals (Sweden)

    Feng-Xiang Chen

    2015-09-01

    Full Text Available Metal-dielectric core-shell nanostructures have been proposed as a light trapping scheme for enhancing the optical absorption of silicon solar cells. As a potential application of such enhanced effects, the scattering efficiencies of three core-shell structures (Ag@SiO2, Ag@TiO2, and Ag@ZrO2 are discussed using the Mie Scattering theory. For compatibility with experiment results, the core diameter and shell thickness are limited to 100 and 30 nm, respectively, and a weighted scattering efficiency is introduced to evaluate the scattering abilities of different nanoparticles under the solar spectrum AM 1.5. The simulated results indicate that the shell material and thickness are two key parameters affecting the weighted scattering efficiency. The SiO2 is found to be an unsuitable shell medium because of its low refractive index. However, using the high refractive index mediumTiO2 in Ag@TiO2 nanoparticles, only the thicker shell (30 nm is more beneficial for light scattering. The ZrO2 is an intermediate refractive index material, so Ag@ZrO2 nanoparticles are the most effective core-shell nanostructures in these silicon solar cells applications.

  1. Device physics underlying silicon heterojunction and passivating-contact solar cells: A topical review

    KAUST Repository

    Chavali, Raghu V. K.; De Wolf, Stefaan; Alam, Muhammad A.

    2018-01-01

    The device physics of commercially dominant diffused-junction silicon solar cells is well understood, allowing sophisticated optimization of this class of devices. Recently, so-called passivating-contact solar cell technologies have become prominent

  2. Dry technologies for the production of crystalline silicon solar cells; Trockentechnologien zur Herstellung von kristallinen Siliziumsolarzellen

    Energy Technology Data Exchange (ETDEWEB)

    Rentsch, J.

    2005-04-15

    Within this work, dynamic plasma etching technologies for the industrial production of crystalline silicon solar cells has been investigated. The research activity can be separated into three major steps: the characterisation of the etching behaviour of a newly developed dynamic plasma etching system, the development and analysis of dry etching processes for solar cell production and the determination of the ecological and economical impacts of such a new technology compared to standard up to date technologies. The characterisation of the etching behaviour has been carried out for two different etching sources, a low frequency (110 kHz) and a microwave (2.45 GHz) plasma source. The parameter of interest was the delivered ion energy of each source mainly determining the reachable etch rate. The etch rate turned out to be the main most critical parameter concerning the reachable wafer throughput per hour. Other points of interest in characterisation of the etching system were the material of the transport carriers, the silicon load as well as the process temperatures. The development of different dry etching processes targets the design of a complete dry production process for crystalline silicon solar cells. Therefore etching processes for saw damage removal, texturing, edge isolation as well as etching of dielectric layers have been developed and optimised. The major benefits of a complete dry production process would be the reduction of handling steps in between process steps and therefore offers a large cost reduction potential. For multicrystalline silicon solar cells a cost reduction potential of 5 % compared to a standard wet chemical based reference process could be realized only including the dry etching of a phosphorus silicate glass layer after diffusion. Further reduction potential offers the implementation of a dry texturing process due to a significant efficiency increase. (orig.)

  3. Study on Production of Silicon Nanoparticles from Quartz Sand for Hybrid Solar Cell Applications

    Science.gov (United States)

    Arunmetha, S.; Vinoth, M.; Srither, S. R.; Karthik, A.; Sridharpanday, M.; Suriyaprabha, R.; Manivasakan, P.; Rajendran, V.

    2018-01-01

    Nano silicon (nano Si) particles were directly prepared from natural mineral quartz sand and thereafter used to fabricate the hybrid silicon solar cells. Here, in this preparation technique, two process stages were involved. In the first stage, the alkaline extraction and acid precipitation processes were applied on quartz sand to fetch silica nanoparticles. In the second stage, magnesiothermic and modified magnesiothermic reduction reactions were applied on nano silica particles to prepare nano Si particles. The effect of two distinct reduction methodologies on nano Si particle preparation was compared. The magnesiothermic and modified magnesiothermic reductions in the silica to silicon conversion process were studied with the help of x-ray diffraction (XRD) with intent to study the phase changes during the reduction reaction as well as its crystalline nature in the pure silicon phase. The particles consist of a combination of fine particles with spherical morphology. In addition to this, the optical study indicated an increase in visible light absorption and also increases the performance of the solar cell. The obtained nano Si particles were used as an active layer to fabricate the hybrid solar cells (HSCs). The obtained results confirmed that the power conversion efficiency (PCE) of the magnesiothermically modified nano Si cells (1.06%) is much higher as compared to the nano Si cells that underwent magnesiothermic reduction (1.02%). Thus, this confirms the increased PCE of the investigated nano Si solar cell up to 1.06%. It also revealed that nano Si behaved as an electron acceptor and transport material. The present study provided valuable insights and direction for the preparation of nano Si particles from quartz sand, including the influence of process methods. The prepared nano Si particles can be utilized for HSCs and an array of portable electronic devices.

  4. Effect of solar-terrestrial phenomena on solar cell's efficiency

    International Nuclear Information System (INIS)

    Zahee, K. B.; Ansari, W.A.; Raza, S.M.M.

    2012-01-01

    It is assumed that the solar cell efficiency of PV device is closely related to the solar irradiance, consider the solar parameter Global Solar Irradiance (G) and the meteorological parameters like daily data of Earth Skin Temperature (E), Average Temperature (T), Relative Humidity (H) and Dew Frost Point (D), for the coastal city Karachi and a non-coastal city Jacobabad, K and J is used as a subscripts for parameters of Karachi and Jacobabad respectively. All variables used here are dependent on the location (latitude and longitude) of our stations except G. To employ ARIMA modeling, the first eighteen years data is used for modeling and forecast is done for the last five years data. In most cases results show good correlation among monthly actual and monthly forecasted values of all the predictors. Next, multiple linear regression is employed to the data obtained by ARIMA modeling and models for mean monthly observed G values are constructed. For each station, two equations are constructed, the R values are above 93% for each model, showing adequacy of the fit. Our computations show that solar cell efficiency can be increased if better modeling for meteorological predictors governs the process. (author)

  5. Organic dye for highly efficient solid-state dye-sensitized solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Schmidt-Mende, L.; Bach, U.; Humphry-Baker, R.; Ito, S.; Graetzel, M. [Institut des Sciences et Ingenierie Chimiques (ISIC), Laboratoire de Photonique et Interfaces (LPI), Ecole Polytechnique Federale de Lausanne (EPFL), CH-1015 Lausanne (Switzerland); Horiuchi, T.; Miura, H. [Technology Research Laboratory, Corporate Research Center, Mitsubishi Paper Mills Limited, 46, Wadai, Tsukuba City, Ibaraki 300-4247 (Japan); Uchida, S. [Institute of Multidisciplinary Research for Advanced Materials (IMRAM), Tohoku University, 1-1 Katahira 2-chome, Aoba-ku, Sendai 980-8577 (Japan)

    2005-04-04

    The feasibility of solid-state dye-sensitized solar cells as a low-cost alternative to amorphous silicon cells is demonstrated. Such a cell with a record efficiency of over 4 % under simulated sunlight is reported, made possible by using a new organic metal-free indoline dye as the sensitizer with high absorption coefficient. (Abstract Copyright [2005], Wiley Periodicals, Inc.)

  6. Non-Vacuum Processed Polymer Composite Antireflection Coating Films for Silicon Solar Cells

    Directory of Open Access Journals (Sweden)

    Abdullah Uzum

    2016-08-01

    Full Text Available A non-vacuum processing method for preparing polymer-based ZrO2/TiO2 multilayer structure antireflection coating (ARC films for crystalline silicon solar cells by spin coating is introduced. Initially, ZrO2, TiO2 and surface deactivated-TiO2 (SD-TiO2 based films were examined separately and the effect of photocatalytic properties of TiO2 film on the reflectivity on silicon surface was investigated. Degradation of the reflectance performance with increasing reflectivity of up to 2% in the ultraviolet region was confirmed. No significant change of the reflectance was observed when utilizing SD-TiO2 and ZrO2 films. Average reflectance (between 300 nm–1100 nm of the silicon surface coated with optimized polymer-based ZrO2 single or ZrO2/SD-TiO2 multilayer composite films was decreased down to 6.5% and 5.5%, respectively. Improvement of photocurrent density (Jsc and conversion efficiency (η of fabricated silicon solar cells owing to the ZrO2/SD-TiO2 multilayer ARC could be confirmed. The photovoltaic properties of Jsc, the open-circuit photo voltage (VOC, the fill factor (FF, and the η were 31.42 mA cm−2, 575 mV, 71.5% and 12.91%. Efficiency of the solar cells was improved by the ZrO2-polymer/SD-TiO2 polymer ARC composite layer by a factor of 0.8% with an increase of Jsc (2.07 mA cm−2 compared to those of fabricated without the ARC.

  7. NREL, CSEM Jointly Set New Efficiency Record with Dual-Junction Solar Cell

    Energy Technology Data Exchange (ETDEWEB)

    2016-01-01

    Scientists set a new world record for converting non-concentrated sunlight into electricity using a dual-junction III-V/Si solar cell. National Renewable Energy Laboratory (NREL) and Swiss Center for Electronics and Microtechnology (CSEM) scientists have collaborated to create a novel tandem solar cell that operates at 29.8% conversion efficiency under non-concentrator (1-sun) conditions. In comparison, the 1-sun efficiency of a silicon (Si) single-junction solar cell is probably still a few years away from converging on its practical limit of about 26%.

  8. Aluminum–Titanium Alloy Back Contact Reducing Production Cost of Silicon Thin-Film Solar Cells

    Directory of Open Access Journals (Sweden)

    Hsin-Yu Wu

    2016-11-01

    Full Text Available In this study, metal films are fabricated by using an in-line reactive direct current magnetron sputtering system. The aluminum–titanium (AlTi back contacts are prepared by changing the pressure from 10 mTorr to 25 mTorr. The optical, electrical and structural properties of the metal back contacts are investigated. The solar cells with the AlTi had lower contact resistance than those with the silver (Ag back contact, resulting in a higher fill factor. The AlTi contact can achieve a solar cell conversion efficiency as high as that obtained from the Ag contact. These findings encourage the potential adoption of AlTi films as an alternative back contact to silver for silicon thin-film solar cells.

  9. Transparent conducting oxide contacts and textured metal back reflectors for thin film silicon solar cells

    Science.gov (United States)

    Franken, R. H.-J.

    2006-09-01

    With the growing population and the increasing environmental problems of the 'common' fossil and nuclear energy production, the need for clean and sustainable energy sources is evident. Solar energy conversion, such as in photovoltaic (PV) systems, can play a major role in the urgently needed energy transition in electricity production. At the present time PV module production is dominated by the crystalline wafer technology. Thin film silicon technology is an alternative solar energy technology that operates at lower efficiencies, however, it has several significant advantages, such as the possibility of deposition on cheap (flexible) substrates and the much smaller silicon material consumption. Because of the small thickness of the solar cells, light trapping schemes are needed in order to obtain enough light absorption and current generation. This thesis describes the research on thin film silicon solar cells with the focus on the optimization of the transparent conducting oxide (TCO) layers and textured metal Ag substrate layers for the use as enhanced light scattering back reflectors in n-i-p type of solar cells. First we analyzed ZnO:Al (TCO) layers deposited in an radio frequent (rf) magnetron deposition system equipped with a 7 inch target. We have focused on the improvement of the electrical properties without sacrificing the optical properties by increasing the mobility and decreasing the grain boundary density. Furthermore, we described some of the effects on light trapping of ZnO:Al enhanced back reflectors. The described effects are able to explain the observed experimental data. Furthermore, we present a relation between the surface morphology of the Ag back contact and the current enhancement in microcrystalline (muc-Si:H) solar cells. We show the importance of the lateral feature sizes of the Ag surface on the light scattering and introduce a method to characterize the quality of the back reflector by combining the vertical and lateral feature sizes

  10. Measurements and Simulations on the Mechanisms of Efficiency Losses in HIT Solar Cells

    Directory of Open Access Journals (Sweden)

    Silvio Pierro

    2015-01-01

    Full Text Available We study the electrical and the optical behavior of HIT solar cell by means of measurements and optoelectrical simulations by TCAD simulations. We compare the HIT solar cell with a conventional crystalline silicon solar cell to identify the strengths and weaknesses of the HIT technology. Results highlight different mechanisms of electrical and optical efficiency losses caused by the presence of the amorphous silicon layer. The higher resistivity of the a-Si layers implies a smaller distance between the metal lines that causes a higher shadowing. The worst optical coupling between the amorphous silicon and the antireflective coating implies a slight increase of reflectivity around the 600 nm wavelength.

  11. Solar Cell Efficiency Tables (Version 51)

    Energy Technology Data Exchange (ETDEWEB)

    Levi, Dean H [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Green, Martin A. [University of New South Wales; Hishikawa, Yoshihiro [National Institute of Advanced Industrial Science and Technology (AIST); Dunlop, Ewan D. [European Commission-Joint Research Centre; Hohl-Ebinger, Jochen [Fraunhofer Institute for Solar Energy Systems; Ho-Baillie, Anita W. Y. [University of New South Wales

    2017-12-14

    Consolidated tables showing an extensive listing of the highest independently confirmed efficiencies for solar cells and modules are presented. Guidelines for inclusion of results into these tables are outlined and new entries since July 2017 are reviewed, together with progress over the last 25 years. Appendices are included documenting area definitions and also listing recognised test centres.

  12. Energy efficiency enhancements for semiconductors, communications, sensors and software achieved in cool silicon cluster project

    Science.gov (United States)

    Ellinger, Frank; Mikolajick, Thomas; Fettweis, Gerhard; Hentschel, Dieter; Kolodinski, Sabine; Warnecke, Helmut; Reppe, Thomas; Tzschoppe, Christoph; Dohl, Jan; Carta, Corrado; Fritsche, David; Tretter, Gregor; Wiatr, Maciej; Detlef Kronholz, Stefan; Mikalo, Ricardo Pablo; Heinrich, Harald; Paulo, Robert; Wolf, Robert; Hübner, Johannes; Waltsgott, Johannes; Meißner, Klaus; Richter, Robert; Michler, Oliver; Bausinger, Markus; Mehlich, Heiko; Hahmann, Martin; Möller, Henning; Wiemer, Maik; Holland, Hans-Jürgen; Gärtner, Roberto; Schubert, Stefan; Richter, Alexander; Strobel, Axel; Fehske, Albrecht; Cech, Sebastian; Aßmann, Uwe; Pawlak, Andreas; Schröter, Michael; Finger, Wolfgang; Schumann, Stefan; Höppner, Sebastian; Walter, Dennis; Eisenreich, Holger; Schüffny, René

    2013-07-01

    An overview about the German cluster project Cool Silicon aiming at increasing the energy efficiency for semiconductors, communications, sensors and software is presented. Examples for achievements are: 1000 times reduced gate leakage in transistors using high-fc (HKMG) materials compared to conventional poly-gate (SiON) devices at the same technology node; 700 V transistors integrated in standard 0.35 μm CMOS; solar cell efficiencies above 19% at cars Contribution to the Topical Issue “International Semiconductor Conference Dresden-Grenoble - ISCDG 2012”, Edited by Gérard Ghibaudo, Francis Balestra and Simon Deleonibus.

  13. Large-size, high-uniformity, random silver nanowire networks as transparent electrodes for crystalline silicon wafer solar cells.

    Science.gov (United States)

    Xie, Shouyi; Ouyang, Zi; Jia, Baohua; Gu, Min

    2013-05-06

    Metal nanowire networks are emerging as next generation transparent electrodes for photovoltaic devices. We demonstrate the application of random silver nanowire networks as the top electrode on crystalline silicon wafer solar cells. The dependence of transmittance and sheet resistance on the surface coverage is measured. Superior optical and electrical properties are observed due to the large-size, highly-uniform nature of these networks. When applying the nanowire networks on the solar cells with an optimized two-step annealing process, we achieved as large as 19% enhancement on the energy conversion efficiency. The detailed analysis reveals that the enhancement is mainly caused by the improved electrical properties of the solar cells due to the silver nanowire networks. Our result reveals that this technology is a promising alternative transparent electrode technology for crystalline silicon wafer solar cells.

  14. Electroplated contacts and porous silicon for silicon based solar cells applications

    Energy Technology Data Exchange (ETDEWEB)

    Kholostov, Konstantin, E-mail: kholostov@diet.uniroma1.it [Department of information engineering, electronics and telecommunications, University of Rome “La Sapienza”, Via Eudossiana 18, 00184 Rome (Italy); Serenelli, Luca; Izzi, Massimo; Tucci, Mario [Enea Casaccia Research Centre Rome, via Anguillarese 301, 00123 Rome (Italy); Balucani, Marco [Department of information engineering, electronics and telecommunications, University of Rome “La Sapienza”, Via Eudossiana 18, 00184 Rome (Italy); Rise Technology S.r.l., Lungomare Paolo Toscanelli 170, 00121 Rome (Italy)

    2015-04-15

    Highlights: • Uniformity of the Ni–Si interface is crucial for performance of Cu–Ni contacts on Si. • Uniformly filled PS is the key to obtain the best performance of Cu–Ni contacts on Si. • Optimization of anodization and electroplating allows complete filling of PS layer. • Highly adhesive and low contact resistance Cu–Ni contacts are obtained on Si. - Abstract: In this paper, a two-layer metallization for silicon based solar cells is presented. The metallization consists of thin nickel barrier and thick copper conductive layers, both obtained by electrodeposition technique suitable for phosphorus-doped 70–90 Ω/sq solar cell emitter formed on p-type silicon substrate. To ensure the adhesion between metal contact and emitter a very thin layer of mesoporous silicon is introduced on the emitter surface before metal deposition. This approach allows metal anchoring inside pores and improves silicon–nickel interface uniformity. Optimization of metal contact parameters is achieved varying the anodization and electrodeposition conditions. Characterization of contacts between metal and emitter is carried out by scanning electron microscopy, specific contact resistance and current–voltage measurements. Mechanical strength of nickel–copper contacts is evaluated by the peel test. Adhesion strength of more than 4.5 N/mm and contact resistance of 350 μΩ cm{sup 2} on 80 Ω/sq emitter are achieved.

  15. Silicon solar cell technology state of the art and a proposed double sided cell

    International Nuclear Information System (INIS)

    Seddik, M.M.

    1987-08-01

    A review of the silicon technology state of the art is given. It had been found that single crystal silicon efficiency was limitd to ≥ 20%. The reason was identified to be due to the recombination current loss mechanisms. However, use of new technologies such as back-surface field, surface passivation, double anti-reflection coatings and back-surface illumination demonstrated to achieve higher efficiencies. Experiments were carried out to evaluate the effect of back surfaces illumination on the cell efficiency enhancement. It was found that for single cell, back-surface illumination contribute a 12% increase in efficiency whereas for double cell illumination (back-to-back cells) the improvement was 59% increase in efficiency. A V-shaped flat mirror reflector with optimum angle of 45 deg. to the plane of the cell from both sides achieved the ultimate efficiency performance. Finally, a proposed high current - high efficiency solar cell called ''Double Drift'' - Double Sided Illumination Cell'' was presented. The new structures were in the form of n + pn + or p + np + double junctions. The expected efficiency ranges 50-60% with proper material design, double anti-reflection coatings and V-shaped irregular plane mirror reflector illumination. (author). 43 refs, 4 figs, 7 tabs

  16. Harnessing light energy with a planar transparent hybrid of graphene/single wall carbon nanotube/n-type silicon heterojunction solar cell

    DEFF Research Database (Denmark)

    Chen, Leifeng; Yu, Hua; Zhong, Jiasong

    2015-01-01

    The photovoltaic conversion efficiency of a solar cell fabricated by a simple electrophoretic method with a planar transparent hybrid of graphenes (GPs) and single wall carbon nanotubes (SCNTs)/n-type silicon heterojunction was significantly increased compared to GPs/n-Si and SCNTs/n-Si solar cells...

  17. Optimization of hybrid organic/inorganic poly(3-hexylthiophene-2,5-diyl)/silicon solar cells

    Science.gov (United States)

    Weingarten, Martin; Sanders, Simon; Stümmler, Dominik; Pfeiffer, Pascal; Vescan, Andrei; Kalisch, Holger

    2016-04-01

    In the last years, hybrid organic/silicon solar cells have attracted great interest in photovoltaic research due to their potential to become a low-cost alternative for the conventionally used silicon pn-junction solar cells. This work is focused on hybrid solar cells based on the polymer poly(3-hexylthiophene-2,5-diyl), which was deposited on n-doped crystalline silicon via spin-coating under ambient conditions. By employing an anisotropic etching step with potassium hydroxide (KOH), the reflection losses at the silicon surface were reduced. Hereby, the short-circuit current density of the hybrid devices was increased by 31%, leading to a maximum power conversion efficiency (PCE) of 13.1% compared to a PCE of 10.7% for the devices without KOH etching. In addition, the contacts were improved by replacing gold with the more conductive silver as top grid material to reduce the contact resistance and by introducing a thin (˜0.5 nm) lithium fluoride layer between the silicon and the aluminum backside contact to improve electron collection and hole blocking. Hereby, the open-circuit voltage and the fill factor of the hybrid solar cells were further improved and devices with very high PCE up to 14.2% have been realized.

  18. Kinetic Properties of Solar Wind Silicon and Iron Ions

    Science.gov (United States)

    Janitzek, N. P.; Berger, L.; Drews, C.; Wimmer-Schweingruber, R. F.

    2017-12-01

    Heavy ions with atomic numbers Z>2 account for less than one percent of the solar wind ions. However, serving as test particles with differing mass and charge, they provide a unique experimental approach to major questions of solar and fundamental plasma physics such as coronal heating, the origin and acceleration of the solar wind and wave-particle interaction in magnetized plasma. Yet the low relative abundances of the heavy ions pose substantial challenges to the instrumentation measuring these species with reliable statistics and sufficient time resolution. As a consequence the numbers of independent measurements and studies are small. The Charge Time-Of-Flight (CTOF) mass spectrometer as part of the Charge, ELement and Isotope Analysis System (CELIAS) onboard the SOlar and Heliospheric Observatory (SOHO) is a linear time-of-flight mass spectrometer which was operated at Lagrangian point L1 in 1996 for a few months only, before it suffered an instrument failure. Despite its short operation time, the CTOF sensor measured solar wind heavy ions with excellent charge state separation, an unprecedented cadence of 5 minutes and very high counting statistics, exceeding similar state-of-the-art instruments by a factor of ten. In contrast to earlier CTOF studies which were based on reduced onboard post-processed data, in our current studies we use raw Pulse Height Analysis (PHA) data providing a significantly increased mass, mass-per-charge and velocity resolution. Focussing on silicon and iron ion measurements, we present an overview of our findings on (1) short time behavior of heavy ion 1D radial velocity distribution functions, (2) differential streaming between heavy ions and solar wind bulk protons, (3) kinetic temperatures of heavy ions. Finally, we compare the CTOF results with measurements of the Solar Wind Ion Composition Spectrometer (SWICS) instrument onboard the Advanced Composition Explorer (ACE).

  19. AZO-Ag-AZO transparent electrode for amorphous silicon solar cells

    International Nuclear Information System (INIS)

    Theuring, Martin; Vehse, Martin; Maydell, Karsten von; Agert, Carsten

    2014-01-01

    Metal-based transparent electrodes can be fabricated at low temperatures, which is crucial for various substrate materials and solar cells. In this work, an oxide-metal-oxide (OMO) transparent electrode based on aluminum zinc oxide (AZO) and silver is compared to AZO layers, fabricated at different temperatures and indium tin oxides. With the OMO structure, a sheet resistance of 7.1/square and a transparency above 80% for almost the entire visible spectrum were achieved. The possible application of such electrodes on a textured solar cell was demonstrated on the example of a rough ZnO substrate. An OMO structure is benchmarked in a n-i-p amorphous silicon solar cell against an AZO front contact fabricated at 200 °C. In the experiment, the OMO electrode shows a superior performance with an efficiency gain of 30%. - Highlights: • Multilayer transparent electrode based on aluminum zinc oxide (AZO) and Ag • Comparison of AZO-Ag-AZO transparent electrode to AZO and indium tin oxide • Performance of AZO-Ag-AZO transparent electrodes on textured surfaces • Comparison of amorphous silicon solar cells with different transparent electrodes

  20. Characterization of up-converter layers on bifacial silicon solar cells

    International Nuclear Information System (INIS)

    Pan, A.C.; Canizo, C. del; Luque, A.

    2009-01-01

    Photon converters can enhance the performance of solar cells as they have the ability to condition the solar spectrum, thus suiting the semiconductor bandgap better. This paper analyzes the implementation and characterization of rare earth-doped up-converters on bifacial silicon solar cells. The bifacial structures considered absorb the light emitted by the up-converter layer located at the rear of the cell. Two different ways of attaching the up-converter to the bifacial solar cell have been implemented: by dissolving the powder in a spin-on oxide and by dissolving it in a silicone gel. The characterization of this system through measurements of quantum efficiency and photocurrent is described. The measurement setup has been adapted to detect the device response in the NIR (near-infrared) range. A key aspect is the light power impinging on the cell; the system has a quartz-tungsten-halogen lamp as a source, and is capable of giving 240 mW m -2 . As the signals we want to detect are very small, an effort has been made to enhance the signal-to-noise ratio by using a low noise pre-amplifier, optimizing the power of the lamp and reducing the chopper frequency. The characterization of two commercial up-converter materials shows the functioning of the approach, as an increase in the photocurrent when illuminated in the 1500 nm wavelength range is detected in some of the cases.

  1. Light Trapping in Thin Film Silicon Solar Cells on Plastic Substrates

    NARCIS (Netherlands)

    de Jong, M.M.

    2013-01-01

    In the search for sustainable energy sources, solar energy can fulfil a large part of the growing demand. The biggest threshold for large-scale solar energy harvesting is the solar panel price. For drastic cost reductions, roll-to-roll fabrication of thin film silicon solar cells using plastic

  2. Large-Scale Fabrication of Silicon Nanowires for Solar Energy Applications.

    Science.gov (United States)

    Zhang, Bingchang; Jie, Jiansheng; Zhang, Xiujuan; Ou, Xuemei; Zhang, Xiaohong

    2017-10-11

    The development of silicon (Si) materials during past decades has boosted up the prosperity of the modern semiconductor industry. In comparison with the bulk-Si materials, Si nanowires (SiNWs) possess superior structural, optical, and electrical properties and have attracted increasing attention in solar energy applications. To achieve the practical applications of SiNWs, both large-scale synthesis of SiNWs at low cost and rational design of energy conversion devices with high efficiency are the prerequisite. This review focuses on the recent progresses in large-scale production of SiNWs, as well as the construction of high-efficiency SiNW-based solar energy conversion devices, including photovoltaic devices and photo-electrochemical cells. Finally, the outlook and challenges in this emerging field are presented.

  3. Bio-inspired co-catalysts bonded to a silicon photocathode for solar hydrogen evolution

    DEFF Research Database (Denmark)

    Hou, Yidong; Abrams, Billie; Vesborg, Peter Christian Kjærgaard

    2011-01-01

    The production of fuels directly or indirectly from sunlight represents one of the major challenges to the development of a sustainable energy system. Hydrogen is the simplest fuel to produce and while platinum and other noble metals are efficient catalysts for photoelectrochemical hydrogen...... at the reversible potential match the requirement of a photoelectrochemical hydrogen production system with a solar-to-hydrogen efficiency in excess of 10%. The experimental observations are supported by DFT calculations of the Mo3S4 cluster adsorbed on the hydrogen-terminated silicon surface providing insights...... deposited on various supports. It will be demonstrated how this overpotential can be eliminated by depositing the same type of hydrogen evolution catalyst on p-type Si which can harvest the red part of the solar spectrum. Such a system could constitute the cathode part of a tandem dream device where the red...

  4. Single Photon Counting UV Solar-Blind Detectors Using Silicon and III-Nitride Materials

    Science.gov (United States)

    Nikzad, Shouleh; Hoenk, Michael; Jewell, April D.; Hennessy, John J.; Carver, Alexander G.; Jones, Todd J.; Goodsall, Timothy M.; Hamden, Erika T.; Suvarna, Puneet; Bulmer, J.; Shahedipour-Sandvik, F.; Charbon, Edoardo; Padmanabhan, Preethi; Hancock, Bruce; Bell, L. Douglas

    2016-01-01

    Ultraviolet (UV) studies in astronomy, cosmology, planetary studies, biological and medical applications often require precision detection of faint objects and in many cases require photon-counting detection. We present an overview of two approaches for achieving photon counting in the UV. The first approach involves UV enhancement of photon-counting silicon detectors, including electron multiplying charge-coupled devices and avalanche photodiodes. The approach used here employs molecular beam epitaxy for delta doping and superlattice doping for surface passivation and high UV quantum efficiency. Additional UV enhancements include antireflection (AR) and solar-blind UV bandpass coatings prepared by atomic layer deposition. Quantum efficiency (QE) measurements show QE > 50% in the 100–300 nm range for detectors with simple AR coatings, and QE ≅ 80% at ~206 nm has been shown when more complex AR coatings are used. The second approach is based on avalanche photodiodes in III-nitride materials with high QE and intrinsic solar blindness. PMID:27338399

  5. Predicting the performance of amorphous and crystalline silicon based photovoltaic solar thermal collectors

    International Nuclear Information System (INIS)

    Daghigh, Ronak; Ibrahim, Adnan; Jin, Goh Li; Ruslan, Mohd Hafidz; Sopian, Kamaruzzaman

    2011-01-01

    BIPVT is an application where solar PV/T modules are integrated into the building structure. System design parameters such as thermal conductivity and fin efficiency, type of cells, type of coolant and operating conditions are factors which influence the performance of BIPVT. Attempts have been made to improve the efficiency of building-integrated photovoltaic thermal (BIPVT). A new design concept of water-based PVT collector for building-integrated applications has been designed and evaluated. The results of simulation study of amorphous silicon (a-Si) PV/T and crystalline silicon (c-Si) module types are based on the metrological condition of Malaysia for a typical day in March. At a flow rate of 0.02 kg/s, solar radiation level between 700 and 900 W/m 2 and ambient temperature between 22 and 32 o C, the electrical, thermal and combined photovoltaic thermal efficiencies for the PV/T (a-Si) were 4.9%, 72% and 77%, respectively. Moreover, the electrical, thermal and combined photovoltaic thermal efficiencies of the PV/T (c-Si) were 11.6%, 51% and 63%.

  6. Numerical simulation of the impurity photovoltaic effect in silicon solar cells doped with thallium

    International Nuclear Information System (INIS)

    Zhao Baoxing; Zhou Jicheng; Chen Yongmin

    2010-01-01

    Many attempts have been made to increase the efficiency of solar cells by introducing a deep impurity level in the semiconductor band gap. Since Tl may be the most suitable impurity for crystalline Si solar cells, the impurity photovoltaic (IPV) effect in silicon solar cell doped with thallium as impurity was investigated by the numerical solar cell simulator SCAPS. Results show that the IPV effect of thallium extends the spectral sensitivity in the sub-band gap range from 1000 to about 1400 nm. When the Tl concentration (N t ) is lower than the base doping density (N D ), the short-circuit current density and efficiency increase with increasing N t . But they decrease rapidly as the impurity density exceeds the shallow base doping density (N t >N D ). The optimum Tl concentration is about equal to the base doping density. For the Si solar cells with high internal reflection coefficients, the IPV effect becomes appreciable (ΔJ sc ∼9 mA/cm 2 and Δη∼2%).

  7. Optimization of Controllable Factors in the Aluminum Silicon Eutectic Paste and Rear Silicon Nitride Mono-Passivation Layer of PERC Solar Cells

    Science.gov (United States)

    Park, Sungeun; Park, Hyomin; Kim, Dongseop; Yang, JungYup; Lee, Dongho; Kim, Young-Su; Kim, Hyun-Jong; Suh, Dongchul; Min, Byoung Koun; Kim, Kyung Nam; Park, Se Jin; Kim, Donghwan; Lee, Hae-Seok; Nam, Junggyu; Kang, Yoonmook

    2018-05-01

    Passivated emitter and rear contact (PERC) is a promising technology owing to high efficiency can be achieved with p-type wafer and their easily applicable to existing lines. In case of using p-type mono wafer, 0.5-1% efficiency increase is expected with PERC technologies compared to existing Al BSF solar cells, while for multi-wafer solar cells it is 0.5-0.8%. We addressed the optimization of PERC solar cells using the Al paste. The paste was prepared from the aluminum-silicon alloy with eutectic composition to avoid the formation of voids that degrade the open-circuit voltage. The glass frit of the paste was changed to improve adhesion. Scanning electron microscopy revealed voids and local back surface field between the aluminum electrode and silicon base. We confirmed the conditions on the SiNx passivation layer for achieving higher efficiency and better adhesion for long-term stability. The cell characteristics were compared across cells containing different pastes. PERC solar cells with the Al/Si eutectic paste exhibited the efficiency of 19.6%.

  8. Synchrotron X-ray imaging applied to solar photovoltaic silicon

    International Nuclear Information System (INIS)

    Lafford, T A; Villanova, J; Plassat, N; Dubois, S; Camel, D

    2013-01-01

    Photovoltaic (PV) cell performance is dictated by the material of the cell, its quality and purity, the type, quantity, size and distribution of defects, as well as surface treatments, deposited layers and contacts. A synchrotron offers unique opportunities for a variety of complementary X-ray techniques, given the brilliance, spectrum, energy tunability and potential for (sub-) micron-sized beams. Material properties are revealed within in the bulk and at surfaces and interfaces. X-ray Diffraction Imaging (X-ray Topography), Rocking Curve Imaging and Section Topography reveal defects such as dislocations, inclusions, misorientations and strain in the bulk and at surfaces. Simultaneous measurement of micro-X-Ray Fluorescence (μ-XRF) and micro-X-ray Beam Induced Current (μ-XBIC) gives direct correlation between impurities and PV performance. Together with techniques such as microscopy and Light Beam Induced Current (LBIC) measurements, the correlation between structural properties and photovoltaic performance can be deduced, as well as the relative influence of parameters such as defect type, size, spatial distribution and density (e.g [1]). Measurements may be applied at different stages of solar cell processing in order to follow the evolution of the material and its properties through the manufacturing process. Various grades of silicon are under study, including electronic and metallurgical grades in mono-crystalline, multi-crystalline and mono-like forms. This paper aims to introduce synchrotron imaging to non-specialists, giving example results on selected solar photovoltaic silicon samples.

  9. Characterization of Transition Metal Oxide/Silicon Heterojunctions for Solar Cell Applications

    Directory of Open Access Journals (Sweden)

    Luis G. Gerling

    2015-10-01

    Full Text Available During the last decade, transition metal oxides have been actively investigated as hole- and electron-selective materials in organic electronics due to their low-cost processing. In this study, four transition metal oxides (V2O5, MoO3, WO3, and ReO3 with high work functions (>5 eV were thermally evaporated as front p-type contacts in planar n-type crystalline silicon heterojunction solar cells. The concentration of oxygen vacancies in MoO3−x was found to be dependent on film thickness and redox conditions, as determined by X-ray Photoelectron Spectroscopy. Transfer length method measurements of oxide films deposited on glass yielded high sheet resistances (~109 Ω/sq, although lower values (~104 Ω/sq were measured for oxides deposited on silicon, indicating the presence of an inversion (hole rich layer. Of the four oxide/silicon solar cells, ReO3 was found to be unstable upon air exposure, while V2O5 achieved the highest open-circuit voltage (593 mV and conversion efficiency (12.7%, followed by MoO3 (581 mV, 12.6% and WO3 (570 mV, 11.8%. A short-circuit current gain of ~0.5 mA/cm2 was obtained when compared to a reference amorphous silicon contact, as expected from a wider energy bandgap. Overall, these results support the viability of a simplified solar cell design, processed at low temperature and without dopants.

  10. A thin-film silicon/silicon hetero-junction hybrid solar cell for photoelectrochemical water-reduction applications

    NARCIS (Netherlands)

    Vasudevan, R.A.; Thanawala, Z; Han, L.; Buijs, Thom; Tan, H.; Deligiannis, D.; Perez Rodriguez, P.; Digdaya, I.A.; Smith, W.A.; Zeman, M.; Smets, A.H.M.

    2016-01-01

    A hybrid tandem solar cell consisting of a thin-film, nanocrystalline silicon top junction and a siliconheterojunction bottom junction is proposed as a supporting solar cell for photoelectrochemical applications.Tunneling recombination junction engineering is shown to be an important consideration

  11. Rational Strategies for Efficient Perovskite Solar Cells.

    Science.gov (United States)

    Seo, Jangwon; Noh, Jun Hong; Seok, Sang Il

    2016-03-15

    A long-standing dream in the large scale application of solar energy conversion is the fabrication of solar cells with high-efficiency and long-term stability at low cost. The realization of such practical goals depends on the architecture, process and key materials because solar cells are typically constructed from multilayer heterostructures of light harvesters, with electron and hole transporting layers as a major component. Recently, inorganic-organic hybrid lead halide perovskites have attracted significant attention as light absorbers for the fabrication of low-cost and high-efficiency solar cells via a solution process. This mainly stems from long-range ambipolar charge transport properties, low exciton binding energies, and suitable band gap tuning by managing the chemical composition. In our pioneering work, a new photovoltaic platform for efficient perovskite solar cells (PSCs) was proposed, which yielded a high power conversion efficiency (PCE) of 12%. The platform consisted of a pillared architecture of a three-dimensional nanocomposite of perovskites fully infiltrating mesoporous TiO2, resulting in the formation of continuous phases and perovskite domains overlaid with a polymeric hole conductor. Since then, the PCE of our PSCs has been rapidly increased from 3% to over 20% certified efficiency. The unprecedented increase in the PCE can be attributed to the effective integration of the advantageous attributes of the refined bicontinuous architecture, deposition process, and composition of perovskite materials. Specifically, the bicontinuous architectures used in the high efficiency comprise a layer of perovskite sandwiched between mesoporous metal-oxide layer, which is a very thinner than that of used in conventional dye-sensitized solar cells, and hole-conducting contact materials with a metal back contact. The mesoporous scaffold can affect the hysteresis under different scan direction in measurements of PSCs. The hysteresis also greatly depends on

  12. Solution for Improve the Efficiency of Solar Photovoltaic Installation

    OpenAIRE

    Petru Chioncel; Cristian Paul Chioncel; Nicoleta Gillich

    2013-01-01

    This paper present a solution for improving efficiency of solar photovoltaic installation, realized with fixed solar photovoltaic modules, placed in solar parks or individual installations. The proposed solution to increase the radiation on the solar photovoltaic panels is to use some thin plates covered with a reflective blanket, mounted in front of the solar photovoltaic modules, with the possibility of their adjustment.

  13. 13th Workshop on Crystalline Silicon Solar Cell Materials and Processes: Extended Abstracts and Papers

    Energy Technology Data Exchange (ETDEWEB)

    Sopori, B. L.; Rand, J.; Saitoh, T.; Sinton, R.; Stavola, M.; Swanson, D.; Tan, T.; Weber, E.; Werner, J.; Al-Jassim, M.

    2003-08-01

    The 13th Workshop will provide a forum for an informal exchange of technical and scientific information between international researchers in the photovoltaic and relevant non-photovoltaic fields. It will offer an excellent opportunity for researchers in private industry and at universities to prioritize mutual needs for future collaborative research. The workshop is intended to address the fundamental aspects of impurities and defects in silicon: their properties, the dynamics during device processing, and their application for developing low-cost processes for manufacturing high-efficiency silicon solar cells. A combination of oral, poster, and discussion sessions will review recent advances in crystal growth, new cell structures, new processes and process characterization techniques, and cell fabrication approaches suitable for future manufacturing demands.

  14. Charge Collection Efficiency Simulations of Irradiated Silicon Strip Detectors

    CERN Document Server

    Peltola, T.

    2014-01-01

    During the scheduled high luminosity upgrade of LHC, the world's largest particle physics accelerator at CERN, the position sensitive silicon detectors installed in the vertex and tracking part of the CMS experiment will face more intense radiation environment than the present system was designed for. Thus, to upgrade the tracker to required performance level, comprehensive measurements and simulations studies have already been carried out. Essential information of the performance of an irradiated silicon detector is obtained by monitoring its charge collection efficiency (CCE). From the evolution of CCE with fluence, it is possible to directly observe the effect of the radiation induced defects to the ability of the detector to collect charge carriers generated by traversing minimum ionizing particles (mip). In this paper the numerically simulated CCE and CCE loss between the strips of irradiated silicon strip detectors are presented. The simulations based on Synopsys Sentaurus TCAD framework were performed ...

  15. Perovskite Solar Cells for High-Efficiency Tandems

    Energy Technology Data Exchange (ETDEWEB)

    McGehee, Michael [Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States); Buonassisi, Tonio [Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States)

    2017-09-30

    The first monolithic perovskite/silicon tandem was made with a diffused silicon p-n junction, a tunnel junction made of n++ hydrogenated amorphous silicon, a titania electron transport layer, a methylammonium lead iodide absorber, and a Spiro-OMeTAD hole transport layer (HTL). The power conversion efficiency (PCE) was only 13.7% due to excessive parasitic absorption of light in the HTL, limiting the matched current density to 11.5 mA/cm2. Werner et al.15 raised the PCE to a record 21.2% by switching to a silicon heterojunction bottom cell and carefully tuning layer thicknesses to achieve lower optical loss and a higher current density of 15.9 mA/cm2. It is clear from these reports that minimizing parasitic absorption in the window layers is crucial to achieving higher current densities and efficiencies in monolithic tandems. To this end, the window layers through which light first passes before entering the perovskite and silicon absorber materials must be highly transparent. The front electrode must also be conductive to carry current laterally across the top of the device. Indium tin oxide (ITO) is widely utilized as a transparent electrode in optoelectronic devices such as flat-panel displays, smart windows, organic light-emitting diodes, and solar cells due to its high conductivity and broadband transparency. ITO is typically deposited through magnetron sputtering; however, the high kinetic energy of sputtered particles can damage underlying layers. In perovskite solar cells, a sputter buffer layer is required to protect the perovskite and organic carrier extraction layers from damage during sputter deposition. The ideal buffer layer should also be energetically well aligned so as to act as a carrier-selective contact, have a wide bandgap to enable high optical transmission, and have no reaction with the halides in the perovskite. Additionally, this buffer layer should act as a diffusion barrier layer to prevent both

  16. Fabrication of heterojunction solar cells by using microcrystalline hydrogenated silicon oxide film as an emitter

    International Nuclear Information System (INIS)

    Banerjee, Chandan; Sritharathikhun, Jaran; Konagai, Makoto; Yamada, Akira

    2008-01-01

    Wide gap, highly conducting n-type hydrogenated microcrystalline silicon oxide (μc-SiO : H) films were prepared by very high frequency plasma enhanced chemical vapour deposition at a very low substrate temperature (170 deg. C) as an alternative to amorphous silicon (a-Si : H) for use as an emitter layer of heterojunction solar cells. The optoelectronic properties of n-μc-SiO : H films prepared for the emitter layer are dark conductivity = 0.51 S cm -1 at 20 nm thin film, activation energy = 23 meV and E 04 = 2.3 eV. Czochralski-grown 380 μm thick p-type (1 0 0) oriented polished silicon wafers with a resistivity of 1-10 Ω cm were used for the fabrication of heterojunction solar cells. Photovoltaic parameters of the device were found to be V oc = 620 mV, J sc = 32.1 mA cm -2 , FF = 0.77, η = 15.32% (active area efficiency)

  17. ZnO transparent conductive oxide for thin film silicon solar cells

    Science.gov (United States)

    Söderström, T.; Dominé, D.; Feltrin, A.; Despeisse, M.; Meillaud, F.; Bugnon, G.; Boccard, M.; Cuony, P.; Haug, F.-J.; Faÿ, S.; Nicolay, S.; Ballif, C.

    2010-03-01

    There is general agreement that the future production of electric energy has to be renewable and sustainable in the long term. Photovoltaic (PV) is booming with more than 7GW produced in 2008 and will therefore play an important role in the future electricity supply mix. Currently, crystalline silicon (c-Si) dominates the market with a share of about 90%. Reducing the cost per watt peak and energy pay back time of PV was the major concern of the last decade and remains the main challenge today. For that, thin film silicon solar cells has a strong potential because it allies the strength of c-Si (i.e. durability, abundancy, non toxicity) together with reduced material usage, lower temperature processes and monolithic interconnection. One of the technological key points is the transparent conductive oxide (TCO) used for front contact, barrier layer or intermediate reflector. In this paper, we report on the versatility of ZnO grown by low pressure chemical vapor deposition (ZnO LP-CVD) and its application in thin film silicon solar cells. In particular, we focus on the transparency, the morphology of the textured surface and its effects on the light in-coupling for micromorph tandem cells in both the substrate (n-i-p) and superstrate (p-i-n) configurations. The stabilized efficiencies achieved in Neuchâtel are 11.2% and 9.8% for p-i-n (without ARC) and n-i-p (plastic substrate), respectively.

  18. CH(3)NH(3)PbI(3) perovskite / silicon tandem solar cells: characterization based optical simulations.

    Science.gov (United States)

    Filipič, Miha; Löper, Philipp; Niesen, Bjoern; De Wolf, Stefaan; Krč, Janez; Ballif, Christophe; Topič, Marko

    2015-04-06

    In this study we analyze and discuss the optical properties of various tandem architectures: mechanically stacked (four-terminal) and monolithically integrated (two-terminal) tandem devices, consisting of a methyl ammonium lead triiodide (CH(3)NH(3)PbI(3)) perovskite top solar cell and a crystalline silicon bottom solar cell. We provide layer thickness optimization guidelines and give estimates of the maximum tandem efficiencies based on state-of-the-art sub cells. We use experimental complex refractive index spectra for all involved materials as input data for an in-house developed optical simulator CROWM. Our characterization based simulations forecast that with optimized layer thicknesses the four-terminal configuration enables efficiencies over 30%, well above the current single-junction crystalline silicon cell record of 25.6%. Efficiencies over 30% can also be achieved with a two-terminal monolithic integration of the sub-cells, combined with proper selection of layer thicknesses.

  19. Zinc tin oxide as high-temperature stable recombination layer for mesoscopic perovskite/silicon monolithic tandem solar cells

    KAUST Repository

    Werner, Jérémie

    2016-12-05

    Perovskite/crystalline silicon tandem solar cells have the potential to reach efficiencies beyond those of silicon single-junction record devices. However, the high-temperature process of 500 °C needed for state-of-the-art mesoscopic perovskite cells has, so far, been limiting their implementation in monolithic tandem devices. Here, we demonstrate the applicability of zinc tin oxide as a recombination layer and show its electrical and optical stability at temperatures up to 500 °C. To prove the concept, we fabricate monolithic tandem cells with mesoscopic top cell with up to 16% efficiency. We then investigate the effect of zinc tin oxide layer thickness variation, showing a strong influence on the optical interference pattern within the tandem device. Finally, we discuss the perspective of mesoscopic perovskite cells for high-efficiency monolithic tandem solar cells. © 2016 Author(s)

  20. Effect of silicon solar cell processing parameters and crystallinity on mechanical strength

    Energy Technology Data Exchange (ETDEWEB)

    Popovich, V.A.; Yunus, A.; Janssen, M.; Richardson, I.M. [Delft University of Technology, Department of Materials Science and Engineering, Delft (Netherlands); Bennett, I.J. [Energy Research Centre of the Netherlands, Solar Energy, PV Module Technology, Petten (Netherlands)

    2011-01-15

    Silicon wafer thickness reduction without increasing the wafer strength leads to a high breakage rate during subsequent handling and processing steps. Cracking of solar cells has become one of the major sources of solar module failure and rejection. Hence, it is important to evaluate the mechanical strength of solar cells and influencing factors. The purpose of this work is to understand the fracture behavior of silicon solar cells and to provide information regarding the bending strength of the cells. Triple junctions, grain size and grain boundaries are considered to investigate the effect of crystallinity features on silicon wafer strength. Significant changes in fracture strength are found as a result of metallization morphology and crystallinity of silicon solar cells. It is observed that aluminum paste type influences the strength of the solar cells. (author)

  1. Models for efficient integration of solar energy

    DEFF Research Database (Denmark)

    Bacher, Peder

    the available flexibility in the system. In the present thesis methods related to operation of solar energy systems and for optimal energy use in buildings are presented. Two approaches for forecasting of solar power based on numerical weather predictions (NWPs) are presented, they are applied to forecast......Efficient operation of energy systems with substantial amount of renewable energy production is becoming increasingly important. Renewables are dependent on the weather conditions and are therefore by nature volatile and uncontrollable, opposed to traditional energy production based on combustion....... The "smart grid" is a broad term for the technology for addressing the challenge of operating the grid with a large share of renewables. The "smart" part is formed by technologies, which models the properties of the systems and efficiently adapt the load to the volatile energy production, by using...

  2. Milestones Toward 50% Efficient Solar Cell Modules

    Science.gov (United States)

    2007-09-01

    efficiency, both at solar cells and module level. The optical system consists of a tiled nonimaging concentrating system, coupled with a spectral...which combines a nonimaging optical concentrator (which does not require tracking and is called a static concentrator) with spectral splitting...DESIGN AND RESULTS The optical design is based on non-symmetric, nonimaging optics, tiled into an array. The central issues in the optical system

  3. Silicon Schottky photovoltaic diodes for solar energy conversion

    Science.gov (United States)

    Anderson, W. A.

    1975-01-01

    Various factors in Schottky barrier solar cell fabrication are evaluated in order to improve understanding of the current flow mechanism and to isolate processing variables that improve efficiency. Results of finger design, substrate resistivity, surface finishing and activation energy studies are detailed. An increased fill factor was obtained by baking of the vacuum system to remove moisture.

  4. Simultaneous electron-proton irradiation of crucible grown and float-zone silicon solar cells

    International Nuclear Information System (INIS)

    Bernard, J.

    1974-01-01

    The realisation of an irradiation chamber which permits simultaneous irradiations by electrons, protons, photons and in-situ measurements of solar cells main parameters (diffusion length, I.V. characteristics) is described. Results obtained on 20 solar cells n/p 10Ωcm made in silicon pulled crystals and 20 solar cells n/p 10Ωcm made in silicon float-zone simultaneously irradiated with electrons and photons are given [fr

  5. Spatially resolved analysis and minimization of resistive losses in high-efficiency Si solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Altermatt, P.P.; Wang, A.; Zhao, J.; Robinson, S.J.; Bowden, S.; Green, M.A. [New South Wales Univ., Kensington, NSW (Australia). Centre for Photovoltaic Devices and Systems; Heiser, G. [New South Wales Univ., Sydney, NSW (Australia). School of Computer Science and Engineering; Aberle, A.G. [Institut fuer Solarenergieforschung (ISFH), Emmerthal (Germany)

    1996-11-01

    This paper presents an improved method for measuring the total lumped series resistance (R{sub s}) of high-efficiency solar cells. Since this method greatly minimizes the influence of non-linear recombination processes on the measured R{sub s} values, it is possible to determine R{sub s} as a function of external current density over a wide range of illumination levels with a significantly improved level of accuracy. This paper furthermore explains how resistive losses in the emitter, the base, the metal/silicon contacts and the front metal grid can be separately determined by combining measurements and multi-dimensional numerical simulations. A novel combination of device simulation and circuit simulation is introduced in order to simulate complete 2 x 2 cm s sq. P:ERL (`passivated emitter and rear locally-diffused`) silicon solar cells. These computer simulations provide improved insight into the dynamics of resistive losses, and thus allow new strategies for the optimization of resistive losses to be developed. The predictions have been experimentally verified with PERL cells, whose resistive losses were reduced to approximately half of their previous values, contributing to a new efficiency world record (24.0%) for silicon solar cells under terrestrial illumination. The measurement techniques and optimization strategies presented here can be applied to most other types of solar cells, and to materials other than silicon. (Author)

  6. Singlet fission efficiency in tetracene-based organic solar cells

    International Nuclear Information System (INIS)

    Wu, Tony C.; Thompson, Nicholas J.; Congreve, Daniel N.; Hontz, Eric; Yost, Shane R.; Van Voorhis, Troy; Baldo, Marc A.

    2014-01-01

    Singlet exciton fission splits one singlet exciton into two triplet excitons. Using a joint analysis of photocurrent and fluorescence modulation under a magnetic field, we determine that the triplet yield within optimized tetracene organic photovoltaic devices is 153% ± 5% for a tetracene film thickness of 20 nm. The corresponding internal quantum efficiency is 127% ± 18%. These results are used to prove the effectiveness of a simplified triplet yield measurement that relies only on the magnetic field modulation of fluorescence. Despite its relatively slow rate of singlet fission, the measured triplet yields confirm that tetracene is presently the best candidate for use with silicon solar cells

  7. Flexible organic solar cells including efficiency enhancing grating structures

    DEFF Research Database (Denmark)

    Oliveira Hansen, Roana Melina de; Liu, Yinghui; Madsen, Morten

    2013-01-01

    , such as photolithography and electron-beam lithography, besides the steps required for the bulk-heterojunction organic solar cell fabrication. After the production steps, the solar cells on polyimide are peeled off the silicon support substrates, resulting in flexible devices containing nanostructures for light absorption......In this work, a new method for the fabrication of organic solar cells containing functional light-trapping nanostructures on flexible substrates is presented. Polyimide is spin-coated on silicon support substrates, enabling standard micro- and nanotechnology fabrication techniques...

  8. Porous silicon-based passivation and gettering in polycrystalline silicon solar cells

    International Nuclear Information System (INIS)

    Dimassi, W.; Bouaiecha, M.; Saadoun, M.; Bessaies, B.; Ezzaouia, H.; Bennaceur, R.

    2002-01-01

    In this work, we report on the effect of introducing a superficial porous silicon (PS) layer on the electrical characteristics of polycrystalline silicon solar cells. The PS layer was formed using a vapour etching (VE)-based method. In addition to its known anti-reflecting action, the forming hydrogen-rich PS layer acts as a passivating agent for the surface of the cell. As a result we found an improvement of the I-V characteristics in dark conditions and AM1 illumination. We show that when the formation of a superficial PS layer is followed by a heat treatment, gettering of impurities from the polycrystalline silicon material is possible. After the removal of the PS layer and the formation of the photovoltaic (PV) structure, we observed an increase of the light-beam-induced-current (LBIC) for treatment temperatures not exceeding 900 deg. C. An improvement of the bulk minority carrier diffusion length and the grain boundary (GB) recombination velocity were observed as the temperature rises, although a global decrease of the LBIC current was observed for temperatures greater than 900 deg. C

  9. Experimental study of liquid-immersion III–V multi-junction solar cells with dimethyl silicon oil under high concentrations

    International Nuclear Information System (INIS)

    Xin, Ganchao; Wang, Yiping; Sun, Yong; Huang, Qunwu; Zhu, Li

    2015-01-01

    Highlights: • Electrical performance of MJ solar cells immersed by silicon oil was studied under 500×. • Theoretical cell photocurrent losses caused by silicon oil absorption were estimated. • Cell performance changes operated in silicon oil (1.0–30.0 mm) were analyzed. • Critical silicon oil thickness on top of MJ solar cells was estimated to be 6.3 mm. - Abstract: In order to better apply direct liquid-immersion cooling (LIC) method in temperature control of solar cells in high concentrating photovoltaic (CPV) systems, electrical characteristics of GaInP/GaInAs/Ge triple-junction solar cells immersed in dimethyl silicon oil of 1.0–30.0 mm thickness were studied experimentally under 500 suns and 25 °C. Theoretical photocurrent losses caused by spectrum transmittance decrease from spectral absorption of silicon oil were estimated for three series sub-cells, and an in-depth analysis of the electrical performances changes of the operated cell in silicon oil was performed. Compared with cell performances without liquid-immersion, the conversion efficiency and the maximum output power of the immersed solar cell in silicon oil of 1.0 mm thickness has increased from 39.567% and 19.556 W to 40.572% and 20.083 W respectively. However, the cell electrical performances decrease with increasing silicon oil thickness in the range of 1.0–30.0 mm, and the efficiency and the maximum output power of the cell have become less than those without liquid-immersion when the silicon oil thickness exceeds 6.3 mm

  10. Low cost silicon solar array project large area silicon sheet task: Silicon web process development

    Science.gov (United States)

    Duncan, C. S.; Seidensticker, R. G.; Mchugh, J. P.; Blais, P. D.; Davis, J. R., Jr.

    1977-01-01

    Growth configurations were developed which produced crystals having low residual stress levels. The properties of a 106 mm diameter round crucible were evaluated and it was found that this design had greatly enhanced temperature fluctuations arising from convection in the melt. Thermal modeling efforts were directed to developing finite element models of the 106 mm round crucible and an elongated susceptor/crucible configuration. Also, the thermal model for the heat loss modes from the dendritic web was examined for guidance in reducing the thermal stress in the web. An economic analysis was prepared to evaluate the silicon web process in relation to price goals.

  11. Significant efficiency enhancement in thin film solar cells using laser beam-induced graphene transparent conductive electrodes

    OpenAIRE

    Thekkekara, L. V.; Cai, Bouyan

    2018-01-01

    Thin film solar cells have been attractive for decades in advanced green technology platforms due to its possibilities to be integrated with buildings and on-chip applications. However, the bottleneck issues involved to consider the current solar cells as a major electricity source includes the lower efficiencies and cost-effectiveness. We numerically demonstrate the concept of the absorption enhancement in thin-film amorphous silicon solar cells using the laser beam-induced graphene material...

  12. Tandem photovoltaic solar cells and increased solar energy conversion efficiency

    Science.gov (United States)

    Loferski, J. J.

    1976-01-01

    Tandem photovoltaic cells, as proposed by Jackson (1955) to increase the efficiency of solar energy conversion, involve the construction of a system of stacked p/n homojunction photovoltaic cells composed of different semiconductors. It had been pointed out by critics, however, that the total power which could be extracted from the cells in the stack placed side by side was substantially greater than the power obtained from the stacked cells. A reexamination of the tandem cell concept in view of the development of the past few years is conducted. It is concluded that the use of tandem cell systems in flat plate collectors, as originally envisioned by Jackson, may yet become feasible as a result of the development of economically acceptable solar cells for large scale terrestrial power generation.

  13. Charge Transfer from Carbon Nanotubes to Silicon in Flexible Carbon Nanotube/Silicon Solar Cells.

    Science.gov (United States)

    Li, Xiaokai; Mariano, Marina; McMillon-Brown, Lyndsey; Huang, Jing-Shun; Sfeir, Matthew Y; Reed, Mark A; Jung, Yeonwoong; Taylor, André D

    2017-12-01

    Mechanical fragility and insufficient light absorption are two major challenges for thin flexible crystalline Si-based solar cells. Flexible hybrid single-walled carbon nanotube (SWNT)/Si solar cells are demonstrated by applying scalable room-temperature processes for the fabrication of solar-cell components (e.g., preparation of SWNT thin films and SWNT/Si p-n junctions). The flexible SWNT/Si solar cells present an intrinsic efficiency ≈7.5% without any additional light-trapping structures. By using these solar cells as model systems, the charge transport mechanisms at the SWNT/Si interface are investigated using femtosecond transient absorption. Although primary photon absorption occurs in Si, transient absorption measurements show that SWNTs also generate and inject excited charge carriers to Si. Such effects can be tuned by controlling the thickness of the SWNTs. Findings from this study could open a new pathway for designing and improving the efficiency of photocarrier generation and absorption for high-performance ultrathin hybrid SWNT/Si solar cells. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  14. Microcrystalline silicon carbide alloys prepared with HWCVD as highly transparent and conductive window layers for thin film solar cells

    International Nuclear Information System (INIS)

    Finger, F.; Astakhov, O.; Bronger, T.; Carius, R.; Chen, T.; Dasgupta, A.; Gordijn, A.; Houben, L.; Huang, Y.; Klein, S.; Luysberg, M.; Wang, H.; Xiao, L.

    2009-01-01

    Crystalline silicon carbide alloys have a very high potential as transparent conductive window layers in thin-film solar cells provided they can be prepared in thin-film form and at compatible deposition temperatures. The low-temperature deposition of such material in microcrystalline form (μc-Si:C:H) was realized by use of monomethylsilane precursor gas diluted in hydrogen with the Hot-Wire Chemical Vapor Deposition process. A wide range of deposition parameters has been investigated and the structural, electronic and optical properties of the μc-SiC:H thin films have been studied. The material, which is strongly n-type from unintentional doping, has been used as window layer in n-side illuminated microcrystalline silicon solar cells. High short-circuit current densities are obtained due to the high transparency of the material resulting in a maximum solar cell conversion efficiency of 9.2%.

  15. Radiation damage and annealing of lithium-doped silicon solar cells

    Science.gov (United States)

    Statler, R. L.

    1971-01-01

    Evidence has been presented that a lithium-diffused crucible-grown silicon solar cell can be made with better efficiency than the flight-quality n p 10 ohms-cm solar cell. When this lithium cell is exposed to a continuous radiation evironment at 60 C (electron spectrum from gamma rays) it has a higher power output than the N/P cell after a fluence equivalent to 1 MeV. A comparison of annealing of proton- and electron-damage in this lithium cell reveals a decidedly faster rate of recovery and higher level of recoverable power from the proton effects. Therefore, the lithium cell shows a good potential for many space missions where the proton flux is a significant fraction of the radiation field to be encountered.

  16. Role of Bismuth in the Electrokinetics of Silicon Photocathodes for Solar Rechargeable Vanadium Redox Flow Batteries.

    Science.gov (United States)

    Flox, Cristina; Murcia-López, Sebastián; Carretero, Nina M; Ros, Carles; Morante, Juan R; Andreu, Teresa

    2018-01-10

    The ability of crystalline silicon to photoassist the V 3+ /V 2+ cathodic reaction under simulated solar irradiation, combined with the effect of bismuth have led to important electrochemical improvements. Besides the photovoltage supplied by the photovoltaics, additional decrease in the onset potentials, high reversibility of the V 3+ /V 2+ redox pair, and improvement in the electrokinetics were attained thanks to the addition of bismuth. In fact, Bi 0 deposition has shown to slightly decrease the photocurrent, but the significant enhancement in the charge transfer, reflected in the overall electrochemical performance clearly justifies its use as additive in a photoassisted system for maximizing the efficiency of solar charge to battery. © 2018 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

  17. In-line high-rate evaporation of aluminum for the metallization of silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Mader, Christoph Paul

    2012-07-11

    This work focuses on the in-line high-rate evaporation of aluminum for contacting rear sides of silicon solar cells. The substrate temperature during the deposition process, the wafer bow after deposition, and the electrical properties of evaporated contacts are investigated. Furthermore, this work demonstrates for the first time the formation of aluminum-doped silicon regions by the in-line high-rate evaporation of aluminum without any further temperature treatment. The temperature of silicon wafers during in-line high-rate evaporation of aluminum is investigated in this work. The temperatures are found to depend on the wafer thickness W, the aluminum layer thickness d, and on the wafer emissivity {epsilon}. Two-dimensional finite-element simulations reproduce the measured peak temperatures with an accuracy of 97%. This work also investigates the wafer bow after in-line high-rate evaporation and shows that the elastic theory overestimates the wafer bow of planar Si wafers. The lower bow is explained with plastic deformation in the Al layer. Due to the plastic deformation only the first 79 K in temperature decrease result in a bow formation. Furthermore the electrical properties of evaporated point contacts are examined in this work. Parameterizations for the measured saturation currents of contacted p-type Si wafers and of contacted boron-diffused p{sup +}-type layers are presented. The contact resistivity of the deposited Al layers to silicon for various deposition processes and silicon surface concentrations are presented and the activation energy of the contact formation is determined. The measured saturation current densities and contact resistivities of the evaporated contacts are used in one-dimensional numerical Simulations and the impact on energy conversion efficiency of replacing a screen-printed rear side by an evaporated rear side is presented. For the first time the formation of aluminum-doped p{sup +}-type (Al-p{sup +}) silicon regions by the in

  18. Simulation of High Efficiency Heterojunction Solar Cells with AFORS-HET

    International Nuclear Information System (INIS)

    Wang Lisheng; Chen Fengxiang; Ai Yu

    2011-01-01

    In this paper, the high efficiency TCO/a-Si:H (n)/a-Si:H(i)/c-Si(p)/uc-Si(p + )/Al HIT (heterojunction with intrinsic thin-layer) solar cells was analyzed and designed by AFORS-HET software. The influences of emitter, intrinsic layer and back surface field (BSF) on the photovoltaic characteristics of solar cell were discussed. The simulation results show that the key role of the intrinsic layer inserted between the a-Si:H and crystalline silicon substrate is to decrease the interface states density. If the interface states density is lower than 10 10 cm -2 V -1 thinner intrinsic layer is better than thicker one. The increase of the thickness of the emitter will decrease the short-current density and affect the conversion efficiency. Microcrystalline BSF can increase conversion efficiency more than 2 percentage points compared with HIT solar cell with no BSF. But this BSF requires the doping concentration must exceed 10 20 cm -3 . Considered the band mismatch between crystalline silicon and microcrystalline silicon, the optimal band gap of microcrystalline silicon BSF is about 1.4-1.6eV.

  19. MOCVD ZnO/Screen Printed Ag Back Reflector for Flexible Thin Film Silicon Solar Cell Application

    Directory of Open Access Journals (Sweden)

    Amornrat Limmanee

    2014-01-01

    Full Text Available We have prepared Ag back electrode by screen printing technique and developed MOCVD ZnO/screen printed Ag back reflector for flexible thin film silicon solar cell application. A discontinuity and poor contact interface between the MOCVD ZnO and screen printed Ag layers caused poor open circuit voltage (Voc and low fill factor (FF; however, an insertion of a thin sputtered ZnO layer at the interface could solve this problem. The n type hydrogenated amorphous silicon (a-Si:H film is preferable for the deposition on the surface of MOCVD ZnO film rather than the microcrystalline film due to its less sensitivity to textured surface, and this allowed an improvement in the FF. The n-i-p flexible amorphous silicon solar cell using the MOCVD ZnO/screen printed Ag back reflector showed an initial efficiency of 6.2% with Voc=0.86 V, Jsc=12.4 mA/cm2, and FF = 0.58 (1 cm2. The identical quantum efficiency and comparable performance to the cells using conventional sputtered Ag back electrode have verified the potential of the MOCVD ZnO/screen printed Ag back reflector and possible opportunity to use the screen printed Ag thick film for flexible thin film silicon solar cells.

  20. Electromagnetic Spectrum Analysis and Its Influence on the Photoelectric Conversion Efficiency of Solar Cells.

    Science.gov (United States)

    Hu, Kexiang; Ding, Enjie; Wangyang, Peihua; Wang, Qingkang

    2016-06-01

    The electromagnetic spectrum and the photoelectric conversion efficiency of the silicon hexagonal nanoconical hole (SiHNH) arrays based solar cells is systematically analyzed according to Rigorous Coupled Wave Analysis (RCWA) and Modal Transmission Line (MTL) theory. An ultimate efficiency of the optimized SiHNH arrays based solar cell is up to 31.92% in consideration of the absorption spectrum, 4.52% higher than that of silicon hexagonal nanoconical frustum (SiHNF) arrays. The absorption enhancement of the SiHNH arrays is due to its lower reflectance and more supported guided-mode resonances, and the enhanced ultimate efficiency is insensitive to bottom diameter (D(bot)) of nanoconical hole and the incident angle. The result provides an additional guideline for the nanostructure surface texturing fabrication design for photovoltaic applications.

  1. Acoustically driven degradation in single crystalline silicon solar cell

    Science.gov (United States)

    Olikh, O. Ya.

    2018-05-01

    The influence of ultrasound on current-voltage characteristics of crystalline silicon solar sell was investigated experimentally. The transverse and longitudinal acoustic waves were used over a temperature range of 290-340 K. It was found that the ultrasound loading leads to the reversible decrease in the photogenerated current, open-circuit voltage, fill factor, carrier lifetime, and shunt resistance as well as the increase in the ideality factor. The experimental results were described by using the models of coupled defect level recombination, Shockley-Read-Hall recombination, and dislocation-induced impedance. The contribution of the boron-oxygen related defects, iron-boron pairs, and oxide precipitates to both the carrier recombination and acousto-defect interaction was discussed. The experimentally observed phenomena are associated with the increase in the distance between coupled defects as well as the extension of the carrier capture coefficient of complex point defects and dislocations.

  2. Quadruple-Junction Thin-Film Silicon-Based Solar Cells

    NARCIS (Netherlands)

    Si, F.T.

    2017-01-01

    The direct utilization of sunlight is a critical energy source in a sustainable future. One of the options is to convert the solar energy into electricity using thin-film silicon-based solar cells (TFSSCs). Solar cells in a triple-junction configuration have exhibited the highest energy conversion

  3. Low temperature surface passivation of crystalline silicon and its application to interdigitated back contact silicon heterojunction (ibc-shj) solar cell

    Science.gov (United States)

    Shu, Zhan

    With the absence of shading loss together with improved quality of surface passivation introduced by low temperature processed amorphous silicon crystalline silicon (a-Si:H/c-Si) heterojunction, the interdigitated back contact silicon heterojunction (IBC-SHJ) solar cell exhibits a potential for higher conversion efficiency and lower cost than a traditional front contact diffused junction solar cell. In such solar cells, the front surface passivation is of great importance to achieve both high open-circuit voltage (Voc) and short-circuit current (Jsc). Therefore, the motivation of this work is to develop a low temperature processed structure for the front surface passivation of IBC-SHJ solar cells, which must have an excellent and stable passivation quality as well as a good anti-reflection property. Four different thin film materials/structures were studied and evaluated for this purpose, namely: amorphous silicon nitride (a-SiNx:H), thick amorphous silicon film (a-Si:H), amorphous silicon/silicon nitride/silicon carbide (a-Si:H/a-SiN x:H/a-SiC:H) stack structure with an ultra-thin a-Si:H layer, and zinc sulfide (ZnS). It was demonstrated that the a-Si:H/a-SiNx:H/a-SiC:H stack surpasses other candidates due to both of its excellent surface passivation quality (SRVSi surface is found to be resulted from (i) field effect passivation due to the positive fixed charge (Q fix~1x1011 cm-2 with 5 nm a-Si:H layer) in a-SiNx:H as measured from capacitance-voltage technique, and (ii) reduced defect state density (mid-gap Dit~4x1010 cm-2eV-1) at a-Si:H/c-Si interface provided by a 5 nm thick a-Si:H layer, as characterized by conductance-frequency measurements. Paralleled with the experimental studies, a computer program was developed in this work based on the extended Shockley-Read-Hall (SRH) model of surface recombination. With the help of this program, the experimental injection level dependent SRV curves of the stack passivated c-Si samples were successfully reproduced and

  4. Advanced interface modelling of n-Si/HNO3 doped graphene solar cells to identify pathways to high efficiency

    Science.gov (United States)

    Zhao, Jing; Ma, Fa-Jun; Ding, Ke; Zhang, Hao; Jie, Jiansheng; Ho-Baillie, Anita; Bremner, Stephen P.

    2018-03-01

    In graphene/silicon solar cells, it is crucial to understand the transport mechanism of the graphene/silicon interface to further improve power conversion efficiency. Until now, the transport mechanism has been predominantly simplified as an ideal Schottky junction. However, such an ideal Schottky contact is never realised experimentally. According to literature, doped graphene shows the properties of a semiconductor, therefore, it is physically more accurate to model graphene/silicon junction as a Heterojunction. In this work, HNO3-doped graphene/silicon solar cells were fabricated with the power conversion efficiency of 9.45%. Extensive characterization and first-principles calculations were carried out to establish an advanced technology computer-aided design (TCAD) model, where p-doped graphene forms a straddling heterojunction with the n-type silicon. In comparison with the simple Schottky junction models, our TCAD model paves the way for thorough investigation on the sensitivity of solar cell performance to graphene properties like electron affinity. According to the TCAD heterojunction model, the cell performance can be improved up to 22.5% after optimizations of the antireflection coatings and the rear structure, highlighting the great potentials for fabricating high efficiency graphene/silicon solar cells and other optoelectronic devices.

  5. Photovoltaic solar panels of crystalline silicon: Characterization and separation.

    Science.gov (United States)

    Dias, Pablo Ribeiro; Benevit, Mariana Gonçalves; Veit, Hugo Marcelo

    2016-03-01

    Photovoltaic panels have a limited lifespan and estimates show large amounts of solar modules will be discarded as electronic waste in a near future. In order to retrieve important raw materials, reduce production costs and environmental impacts, recycling such devices is important. Initially, this article investigates which silicon photovoltaic module's components are recyclable through their characterization using X-ray fluorescence, X-ray diffraction, energy dispersion spectroscopy and atomic absorption spectroscopy. Next, different separation methods are tested to favour further recycling processes. The glass was identified as soda-lime glass, the metallic filaments were identified as tin-lead coated copper, the panel cells were made of silicon and had silver filaments attached to it and the modules' frames were identified as aluminium, all of which are recyclable. Moreover, three different components segregation methods have been studied. Mechanical milling followed by sieving was able to separate silver from copper while chemical separation using sulphuric acid was able to detach the semiconductor material. A thermo gravimetric analysis was performed to evaluate the use of a pyrolysis step prior to the component's removal. The analysis showed all polymeric fractions present degrade at 500 °C. © The Author(s) 2016.

  6. High efficiency thin-film solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Schock, Hans-Werner [Helmholtz Zentrum Berlin (Germany). Solar Energy

    2012-11-01

    Production of photovoltaics is growing worldwide on a gigawatt scale. Among the thin film technologies, Cu(In,Ga)S,Se{sub 2} (CIS or CIGS) based solar cells have been the focus of more and more attention. This paper aims to analyze the success of CIGS based solar cells and the potential of this technology for future photovoltaics large-scale production. Specific material properties make CIS unique and allow the preparation of the material with a wide range of processing options. The huge potential lies in the possibility to take advantage of modern thin film processing equipment and combine it with very high efficiencies beyond 20% already achieved on the laboratory scale. A sustainable development of this technology could be realized by modifying the materials and replacing indium by abundant elements. (orig.)

  7. Temperature and color management of silicon solar cells for building integrated photovoltaic

    Science.gov (United States)

    Amara, Mohamed; Mandorlo, Fabien; Couderc, Romain; Gerenton, Félix; Lemiti, Mustapha

    2018-01-01

    Color management of integrated photovoltaics must meet two criteria of performance: provide maximum conversion efficiency and allow getting the chosen colors with an appropriate brightness, more particularly when using side by side solar cells of different colors. As the cooling conditions are not necessarily optimal, we need to take into account the influence of the heat transfer and temperature. In this article, we focus on the color space and brightness achieved by varying the antireflective properties of flat silicon solar cells. We demonstrate that taking into account the thermal effects allows freely choosing the color and adapting the brightness with a small impact on the conversion efficiency, except for dark blue solar cells. This behavior is especially true when heat exchange by convection is low. Our optical simulations show that the perceived color, for single layer ARC, is not varying with the position of the observer, whatever the chosen color. The use of a double layer ARC adds flexibility to tune the wanted color since the color space is greatly increased in the green and yellow directions. Last, choosing the accurate material allows both bright colors and high conversion efficiency at the same time.

  8. Temperature and color management of silicon solar cells for building integrated photovoltaic

    Directory of Open Access Journals (Sweden)

    Amara Mohamed

    2018-01-01

    Full Text Available Color management of integrated photovoltaics must meet two criteria of performance: provide maximum conversion efficiency and allow getting the chosen colors with an appropriate brightness, more particularly when using side by side solar cells of different colors. As the cooling conditions are not necessarily optimal, we need to take into account the influence of the heat transfer and temperature. In this article, we focus on the color space and brightness achieved by varying the antireflective properties of flat silicon solar cells. We demonstrate that taking into account the thermal effects allows freely choosing the color and adapting the brightness with a small impact on the conversion efficiency, except for dark blue solar cells. This behavior is especially true when heat exchange by convection is low. Our optical simulations show that the perceived color, for single layer ARC, is not varying with the position of the observer, whatever the chosen color. The use of a double layer ARC adds flexibility to tune the wanted color since the color space is greatly increased in the green and yellow directions. Last, choosing the accurate material allows both bright colors and high conversion efficiency at the same time.

  9. Charge transfer processes in hybrid solar cells composed of amorphous silicon and organic materials

    Energy Technology Data Exchange (ETDEWEB)

    Schaefer, Sebastian; Neher, Dieter [Universitaet Potsdam, Inst. Physik u. Astronomie, Karl-Liebknecht-Strasse 24/25, 14467 Potsdam-Golm (Germany); Schulze, Tim; Korte, Lars [Helmholtz Zentrum Berlin, Inst. fuer Silizium Photovoltaik, Kekulestrasse 5, 12489 Berlin (Germany)

    2011-07-01

    The efficiency of hybrid solar cells composed of organic materials and amorphous hydrogenated silicon (a-Si:H) strongly depends upon the efficiency of charge transfer processes at the inorganic-organic interface. We investigated the performance of devices comprising an ITO/a-Si:H(n-type)/a-Si:H(intrinsic)/organic/metal multilayer structure and using two different organic components: zinc phthalocyanine (ZnPc) and poly(3-hexylthiophene) (P3HT). The results show higher power conversion- and quantum efficiencies for the P3HT based cells, compared to ZnPc. This can be explained by larger energy-level offset at the interface between the organic layer and a-Si:H, which facilitates hole transfer from occupied states in the valence band tail to the HOMO of the organic material and additionally promotes exciton splitting. The performance of the a-Si:H/P3HT cells can be further improved by treatment of the amorphous silicon surface with hydrofluoric acid (HF) and p-type doping of P3HT with F4TCNQ. The improved cells reached maximum power conversion efficiencies of 1%.

  10. Microcrystalline silicon films and solar cells investigatet by photoluminescence spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Merdzhanova, T.

    2005-07-01

    A systematic investigation on photoluminescence (PL) properties of microcrystalline silicon ({mu}c-Si:H) films with structural composition changing from highly crystalline to predominantly amorphous is presented. The samples were prepared by PECVD and HWCVD with different silane concentration in hydrogen (SC). By using photoluminescence in combination with Raman spectroscopy the relationship between electronic properties and the microstructure of the material is studied. The PL spectra of {mu}c-Si:H reveal a rather broad ({proportional_to}0.13 eV) featureless band at about 1 eV ('{mu}c'-Si-band). In mixed phase material of crystalline and amorphous regions, a band at about 1.3 eV with halfwidth of about 0.3 eV is found in addition to '{mu}c'-Si-band, which is attributed to the amorphous phase ('a'-Si-band). Similarly to amorphous silicon, the '{mu}c'-Si-band is assigned to recombination between electrons and holes in band tail states. An additional PL band centred at about 0.7 eV with halfwidth slightly broader than the '{mu}c'-Si-band is observed only for films prepared at high substrate temperature and it is preliminarily assigned to defect-related transitions as in polycrystalline silicon. With decreasing crystalline volume fraction, the '{mu}c'-Si-band shifts continuously to higher energies for all {mu}c-Si:H films but the linewidth of the PL spectra is almost unaffected. This is valid for all deposition conditions investigated. The results are interpreted, assuming decrease of the density of band tail states with decreasing crystalline volume fraction. A simple model is proposed to simulate PL spectra and V{sub oc} in {mu}c-Si:H solar cells as a function of temperature, based on carrier distributions in quasi-equilibrium conditions. In the model is assumed symmetric density of states distributions for electrons and holes in the conduction and the valence band tail states. The best agreement between

  11. Wet-Chemical Preparation of Silicon Tunnel Oxides for Transparent Passivated Contacts in Crystalline Silicon Solar Cells.

    Science.gov (United States)

    Köhler, Malte; Pomaska, Manuel; Lentz, Florian; Finger, Friedhelm; Rau, Uwe; Ding, Kaining

    2018-05-02

    Transparent passivated contacts (TPCs) using a wide band gap microcrystalline silicon carbide (μc-SiC:H(n)), silicon tunnel oxide (SiO 2 ) stack are an alternative to amorphous silicon-based contacts for the front side of silicon heterojunction solar cells. In a systematic study of the μc-SiC:H(n)/SiO 2 /c-Si contact, we investigated selected wet-chemical oxidation methods for the formation of ultrathin SiO 2 , in order to passivate the silicon surface while ensuring a low contact resistivity. By tuning the SiO 2 properties, implied open-circuit voltages of 714 mV and contact resistivities of 32 mΩ cm 2 were achieved using μc-SiC:H(n)/SiO 2 /c-Si as transparent passivated contacts.

  12. Tunnel oxide passivated contacts formed by ion implantation for applications in silicon solar cells

    International Nuclear Information System (INIS)

    Reichel, Christian; Feldmann, Frank; Müller, Ralph; Hermle, Martin; Glunz, Stefan W.; Reedy, Robert C.; Lee, Benjamin G.; Young, David L.; Stradins, Paul

    2015-01-01

    Passivated contacts (poly-Si/SiO x /c-Si) doped by shallow ion implantation are an appealing technology for high efficiency silicon solar cells, especially for interdigitated back contact (IBC) solar cells where a masked ion implantation facilitates their fabrication. This paper presents a study on tunnel oxide passivated contacts formed by low-energy ion implantation into amorphous silicon (a-Si) layers and examines the influence of the ion species (P, B, or BF 2 ), the ion implantation dose (5 × 10 14  cm −2 to 1 × 10 16  cm −2 ), and the subsequent high-temperature anneal (800 °C or 900 °C) on the passivation quality and junction characteristics using double-sided contacted silicon solar cells. Excellent passivation quality is achieved for n-type passivated contacts by P implantations into either intrinsic (undoped) or in-situ B-doped a-Si layers with implied open-circuit voltages (iV oc ) of 725 and 720 mV, respectively. For p-type passivated contacts, BF 2 implantations into intrinsic a-Si yield well passivated contacts and allow for iV oc of 690 mV, whereas implanted B gives poor passivation with iV oc of only 640 mV. While solar cells featuring in-situ B-doped selective hole contacts and selective electron contacts with P implanted into intrinsic a-Si layers achieved V oc of 690 mV and fill factor (FF) of 79.1%, selective hole contacts realized by BF 2 implantation into intrinsic a-Si suffer from drastically reduced FF which is caused by a non-Ohmic Schottky contact. Finally, implanting P into in-situ B-doped a-Si layers for the purpose of overcompensation (counterdoping) allowed for solar cells with V oc of 680 mV and FF of 80.4%, providing a simplified and promising fabrication process for IBC solar cells featuring passivated contacts

  13. Silicon is in short supply for the growth in solar cell production

    International Nuclear Information System (INIS)

    Halvorsen, Finn

    2003-01-01

    Polycrystalline silicon will be in short supply by 2006. This is the conclusion of two independent studies, one done for the European Union and one for the Photovoltaic Industry Association. The most important reason is the rapid growth in the solar cell market, which is expected to be about 15 per cent per year until 2010. If so, the world's solar cell manufacturers will need 8,000 tonnes of pure silicon at that time. This growth presupposes that the price of silicon does not rise, but it readily might. Because the general situation for the semiconductor industry has been difficult, silicon has been readily available to the manufacturers of solar cells in recent years. This is true of discard, which has always been used for solar cells, but also of silicon that was intended to become microprocessors, storage chips and other advanced semiconductor devices. As the semiconductor market improves, the amount of silicon from this source will shrink. Manufacturers of solar cells cannot afford to pay as much as the semiconductor manufacturers, and some consider making solar cell grade silicon themselves

  14. Recent Advances in High Efficiency Solar Cells

    Institute of Scientific and Technical Information of China (English)

    Yoshio; Ohshita; Hidetoshi; Suzuki; Kenichi; Nishimura; Masafumi; Yamaguchi

    2007-01-01

    1 Results The conversion efficiency of sunlight to electricity is limited around 25%,when we use single junction solar cells. In the single junction cells,the major energy losses arise from the spectrum mismatching. When the photons excite carriers with energy well in excess of the bandgap,these excess energies were converted to heat by the rapid thermalization. On the other hand,the light with lower energy than that of the bandgap cannot be absorbed by the semiconductor,resulting in the losses. One way...

  15. Electroluminescence efficiencies of erbium in silicon-based hosts

    Energy Technology Data Exchange (ETDEWEB)

    Cueff, Sébastien, E-mail: sebastien-cueff@brown.edu, E-mail: christophe.labbe@ensicaen.fr [Centre de Recherche sur les Ions, les Matériaux et la Photonique (CIMAP), UMR 6252 CNRS/CEA/Ensicaen/UCBN, Caen 14050 (France); School of Engineering, Brown University, Providence, Rhode Island 02912 (United States); Manel Ramírez, Joan; Berencén, Yonder; Garrido, Blas [MIND-IN2UB, Department Electrònica, Universitat de Barcelona, Martí i Franquès 1, Barcelona 08028 (Spain); Kurvits, Jonathan A.; Zia, Rashid [School of Engineering, Brown University, Providence, Rhode Island 02912 (United States); Department of Physics, Brown University, Providence, Rhode Island 02912 (United States); Rizk, Richard; Labbé, Christophe, E-mail: sebastien-cueff@brown.edu, E-mail: christophe.labbe@ensicaen.fr [Centre de Recherche sur les Ions, les Matériaux et la Photonique (CIMAP), UMR 6252 CNRS/CEA/Ensicaen/UCBN, Caen 14050 (France)

    2013-11-04

    We report on room-temperature 1.5 μm electroluminescence from trivalent erbium (Er{sup 3+}) ions embedded in three different CMOS-compatible silicon-based hosts: SiO{sub 2}, Si{sub 3}N{sub 4}, and SiN{sub x}. We show that although the insertion of either nitrogen or excess silicon helps enhance electrical conduction and reduce the onset voltage for electroluminescence, it drastically decreases the external quantum efficiency of Er{sup 3+} ions from 2% in SiO{sub 2} to 0.001% and 0.0004% in SiN{sub x} and Si{sub 3}N{sub 4}, respectively. Furthermore, we present strong evidence that hot carrier injection is significantly more efficient than defect-assisted conduction for the electrical excitation of Er{sup 3+} ions. These results suggest strategies to optimize the engineering of on-chip electrically excited silicon-based nanophotonic light sources.

  16. FDTD modeling of solar energy absorption in silicon branched nanowires.

    Science.gov (United States)

    Lundgren, Christin; Lopez, Rene; Redwing, Joan; Melde, Kathleen

    2013-05-06

    Thin film nanostructured photovoltaic cells are increasing in efficiency and decreasing the cost of solar energy. FDTD modeling of branched nanowire 'forests' are shown to have improved optical absorption in the visible and near-IR spectra over nanowire arrays alone, with a factor of 5 enhancement available at 1000 nm. Alternate BNW tree configurations are presented, achieving a maximum absorption of over 95% at 500 nm.

  17. Solar thermoelectric generators fabricated on a silicon-on-insulator substrate

    International Nuclear Information System (INIS)

    De Leon, Maria Theresa; Chong, Harold; Kraft, Michael

    2014-01-01

    Solar thermal power generation is an attractive electricity generation technology as it is environment-friendly, has the potential for increased efficiency, and has high reliability. The design, modelling, and evaluation of solar thermoelectric generators (STEGs) fabricated on a silicon-on-insulator substrate are presented in this paper. Solar concentration is achieved by using a focusing lens to concentrate solar input onto the membrane of the STEG. A thermal model is developed based on energy balance and heat transfer equations using lumped thermal conductances. This thermal model is shown to be in good agreement with actual measurement results. For a 1 W laser input with a spot size of 1 mm, a maximum open-circuit voltage of 3.06 V is obtained, which translates to a temperature difference of 226 °C across the thermoelements and delivers 25 µW of output power under matched load conditions. Based on solar simulator measurements, a maximum TEG voltage of 803 mV was achieved by using a 50.8 mm diameter plano-convex lens to focus solar input to a TEG with a length of 1000 µm, width of 15 µm, membrane diameter of 3 mm, and 114 thermocouples. This translates to a temperature difference of 18 °C across the thermoelements and an output power under matched load conditions of 431 nW. This paper demonstrates that by utilizing a solar concentrator to focus solar radiation onto the hot junction of a TEG, the temperature difference across the device is increased; subsequently improving the TEG’s efficiency. By using materials that are compatible with standard CMOS and MEMS processes, integration of solar-driven TEGs with on-chip electronics is seen to be a viable way of solar energy harvesting where the resulting microscale system is envisioned to have promising applications in on-board power sources, sensor networks, and autonomous microsystems. (paper)

  18. Polycrystalline silicon thin-film solar cells on glass

    Energy Technology Data Exchange (ETDEWEB)

    Gall, S.; Becker, C.; Conrad, E.; Dogan, P.; Fenske, F.; Gorka, B.; Lee, K.Y.; Rau, B.; Ruske, F.; Rech, B. [Helmholtz-Zentrum Berlin fuer Materialien und Energie GmbH (formerly Hahn-Meitner-Institut Berlin GmbH), Department Silicon Photovoltaics (SE1), Kekulestr. 5, D-12489 Berlin (Germany)

    2009-06-15

    Poly-Si thin-film solar cells on glass feature the potential to reach single-junction efficiencies of 15% or even higher at low costs. In this paper innovative approaches are discussed, which could lead to substantial efficiency improvements and significant cost reductions: (i) preparation of large-grained poly-Si films using the 'seed layer concept' targeting at high material quality, (ii) utilization of ZnO:Al-coated glass enabling simple contacting and light-trapping schemes, (iii) utilization of high-rate electron-beam evaporation for the absorber deposition offering a high potential for cost reduction. (author)

  19. A miniature solar device for overall water splitting consisting of series-connected spherical silicon solar cells

    KAUST Repository

    Kageshima, Yosuke

    2016-04-18

    A novel “photovoltaics (PV) + electrolyzer” concept is presented using a simple, small, and completely stand-alone non-biased device for solar-driven overall water splitting. Three or four spherical-shaped p-n junction silicon balls were successfully connected in series, named “SPHELAR.” SPHELAR possessed small projected areas of 0.20 (3PVs) and 0.26 cm2 (4PVs) and exhibited working voltages sufficient for water electrolysis. Impacts of the configuration on the PV module performance were carefully analyzed, revealing that a drastic increase in the photocurrent (≈20%) was attained by the effective utilization of a reflective sheet. Separate investigations on the electrocatalyst performance showed that non-noble metal based materials with reasonably small sizes (<0.80 cm2) exhibited substantial currents at the PV working voltage. By combining the observations of the PV characteristics, light management and electrocatalyst performance, solar-driven overall water splitting was readily achieved, reaching solar-to-hydrogen efficiencies of 7.4% (3PVs) and 6.4% (4PVs).

  20. A miniature solar device for overall water splitting consisting of series-connected spherical silicon solar cells

    KAUST Repository

    Kageshima, Yosuke; Shinagawa, Tatsuya; Kuwata, Takaaki; Nakata, Josuke; Minegishi, Tsutomu; Takanabe, Kazuhiro; Domen, Kazunari

    2016-01-01

    A novel “photovoltaics (PV) + electrolyzer” concept is presented using a simple, small, and completely stand-alone non-biased device for solar-driven overall water splitting. Three or four spherical-shaped p-n junction silicon balls were successfully connected in series, named “SPHELAR.” SPHELAR possessed small projected areas of 0.20 (3PVs) and 0.26 cm2 (4PVs) and exhibited working voltages sufficient for water electrolysis. Impacts of the configuration on the PV module performance were carefully analyzed, revealing that a drastic increase in the photocurrent (≈20%) was attained by the effective utilization of a reflective sheet. Separate investigations on the electrocatalyst performance showed that non-noble metal based materials with reasonably small sizes (<0.80 cm2) exhibited substantial currents at the PV working voltage. By combining the observations of the PV characteristics, light management and electrocatalyst performance, solar-driven overall water splitting was readily achieved, reaching solar-to-hydrogen efficiencies of 7.4% (3PVs) and 6.4% (4PVs).