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Sample records for effected oxide capacitor

  1. Radiation effects in metal-oxide-semiconductor capacitors

    International Nuclear Information System (INIS)

    Collins, J.L.

    1987-01-01

    The effects of various radiations on commercially made Al-SiO 2 -Si Capacitors (MOSCs) have been investigated. Intrinsic dielectric breakdown in MOSCs has been shown to be a two-stage process dominated by charge injection in a pre-breakdown stage; this is associated with localised high-field injection of carriers from the semiconductor substrate to interfacial and bulk charge traps which, it is proposed, leads to the formation of conducting channels through the dielectric with breakdown occurring as a result of the dissipation of the conduction band energy. A study of radiation-induced dielectric breakdown has revealed the possibility of anomalous hot-electron injection to an excess of bulk oxide traps in the ionization channel produced by very heavily ionizing radiation, which leads to intrinsic breakdown in high-field stressed devices. This is interpreted in terms of a modified model for radiation-induced dielectric breakdown based upon the primary dependence of breakdown on charge injection rather than high-field mechanisms. A detailed investigation of charge trapping and interface state generation due to various radiations has revealed evidence of neutron induced interface states, and the generation of positive oxide charge in devices due to all the radiations tested. The greater the linear energy transfer of the radiation, the greater the magnitude of charge trapped in the oxide and the number of interface states generated. This is interpreted in terms of Si-H and Si-OH bond-breaking at the Si-SiO 2 interface which is enhanced by charge carrier transfer to the interface and by anomalous charge injection to compensate for the excess of charge carriers created by the radiation. (author)

  2. Radiation effects on the electrical properties of hafnium oxide based MOS capacitors.

    Energy Technology Data Exchange (ETDEWEB)

    Petrosky, J. C. (Air Force Institute of Technology, Wright-Patterson Air Force Base, OH); McClory, J. W. (Air Force Institute of Technology, Wright-Patterson Air Force Base, OH); Bielejec, Edward Salvador; Foster, J. C. (Air Force Institute of Technology, Wright-Patterson Air Force Base, OH)

    2010-10-01

    Hafnium oxide-based MOS capacitors were investigated to determine electrical property response to radiation environments. In situ capacitance versus voltage measurements were analyzed to identify voltage shifting as a result of changes to trapped charge with increasing dose of gamma, neutron, and ion radiation. In situ measurements required investigation and optimization of capacitor fabrication to include dicing, cleaning, metalization, packaging, and wire bonding. A top metal contact of 200 angstroms of titanium followed by 2800 angstroms of gold allowed for repeatable wire bonding and proper electrical response. Gamma and ion irradiations of atomic layer deposited hafnium oxide on silicon devices both resulted in a midgap voltage shift of no more than 0.2 V toward less positive voltages. This shift indicates recombination of radiation induced positive charge with negative trapped charge in the bulk oxide. Silicon ion irradiation caused interface effects in addition to oxide trap effects that resulted in a flatband voltage shift of approximately 0.6 V also toward less positive voltages. Additionally, no bias dependent voltage shifts with gamma irradiation and strong oxide capacitance room temperature annealing after ion irradiation was observed. These characteristics, in addition to the small voltage shifts observed, demonstrate the radiation hardness of hafnium oxide and its applicability for use in space systems.

  3. An Overview of High-k Oxides on Hydrogenated-Diamond for Metal-Oxide-Semiconductor Capacitors and Field-Effect Transistors

    Directory of Open Access Journals (Sweden)

    Jiangwei Liu

    2018-06-01

    Full Text Available Thanks to its excellent intrinsic properties, diamond is promising for applications of high-power electronic devices, ultraviolet detectors, biosensors, high-temperature tolerant gas sensors, etc. Here, an overview of high-k oxides on hydrogenated-diamond (H-diamond for metal-oxide-semiconductor (MOS capacitors and MOS field-effect transistors (MOSFETs is demonstrated. Fabrication routines for the H-diamond MOS capacitors and MOSFETs, band configurations of oxide/H-diamond heterointerfaces, and electrical properties of the MOS and MOSFETs are summarized and discussed. High-k oxide insulators are deposited using atomic layer deposition (ALD and sputtering deposition (SD techniques. Electrical properties of the H-diamond MOS capacitors with high-k oxides of ALD-Al2O3, ALD-HfO2, ALD-HfO2/ALD-Al2O3 multilayer, SD-HfO2/ALD-HfO2 bilayer, SD-TiO2/ALD-Al2O3 bilayer, and ALD-TiO2/ALD-Al2O3 bilayer are discussed. Analyses for capacitance-voltage characteristics of them show that there are low fixed and trapped charge densities for the ALD-Al2O3/H-diamond and SD-HfO2/ALD-HfO2/H-diamond MOS capacitors. The k value of 27.2 for the ALD-TiO2/ALD-Al2O3 bilayer is larger than those of the other oxide insulators. Drain-source current versus voltage curves show distinct pitch-off and p-type channel characteristics for the ALD-Al2O3/H-diamond, SD-HfO2/ALD-HfO2/H-diamond, and ALD-TiO2/ALD-Al2O3/H-diamond MOSFETs. Understanding of fabrication routines and electrical properties for the high-k oxide/H-diamond MOS electronic devices is meaningful for the fabrication of high-performance H-diamond MOS capacitor and MOSFET gas sensors.

  4. Effects of Complex Structured Anodic Oxide Dielectric Layer Grown in Pore Matrix for Aluminum Capacitor.

    Science.gov (United States)

    Shin, Jin-Ha; Yun, Sook Young; Lee, Chang Hyoung; Park, Hwa-Sun; Suh, Su-Jeong

    2015-11-01

    Anodization of aluminum is generally divided up into two types of anodic aluminum oxide structures depending on electrolyte type. In this study, an anodization process was carried out in two steps to obtain high dielectric strength and break down voltage. In the first step, evaporated high purity Al on Si wafer was anodized in oxalic acidic aqueous solution at various times at a constant temperature of 5 degrees C. In the second step, citric acidic aqueous solution was used to obtain a thickly grown sub-barrier layer. During the second anodization process, the anodizing potential of various ranges was applied at room temperature. An increased thickness of the sub-barrier layer in the porous matrix was obtained according to the increment of the applied anodizing potential. The microstructures and the growth of the sub-barrier layer were then observed with an increasing anodizing potential of 40 to 300 V by using a scanning electron microscope (SEM). An impedance analyzer was used to observe the change of electrical properties, including the capacitance, dissipation factor, impedance, and equivalent series resistance (ESR) depending on the thickness increase of the sub-barrier layer. In addition, the breakdown voltage was measured. The results revealed that dielectric strength was improved with the increase of sub-barrier layer thickness.

  5. Capacitors.

    Science.gov (United States)

    Trotter, Donald M., Jr.

    1988-01-01

    Presents a historical backdrop for a discussion of capacitor design and function. Discusses the production, importance, and function of two types of miniature capacitors; electrolytic and multilayer ceramic capacitors. Describes the function of these miniature capacitors in comparison to the Leyden jar, a basic demonstration of capacitance. (CW)

  6. Radiation effects in polycarbonate capacitors

    Directory of Open Access Journals (Sweden)

    Vujisić Miloš

    2009-01-01

    Full Text Available The aim of this paper is to examine the influence of neutron and gamma irradiation on the dissipation factor and capacitance of capacitors with polycarbonate dielectrics. The operation of capacitors subject to extreme conditions, such as the presence of ionizing radiation fields, is of special concern in military industry and space technology. Results obtained show that the exposure to a mixed neutron and gamma radiation field causes a decrease of capacitance, while the loss tangent remains unchanged.

  7. Modelling of Leakage Current Through Double Dielectric Gate Stack in Metal Oxide Semiconductor Capacitor

    International Nuclear Information System (INIS)

    Fatimah A Noor; Mikrajuddin Abdullah; Sukirno; Khairurrijal

    2008-01-01

    In this paper, we have derived analytical expression of leakage current through double barriers in Metal Oxide Semiconductor (MOS) capacitor. Initially, electron transmittance through the MOS capacitor was derived by including the coupling between the transverse and longitudinal energies. The transmittance was then employed to obtain leakage current through the double barrier. In this model, we observed the effect of electron velocity due to the coupling effect and the oxide thickness to the leakage current. The calculated results showed that the leakage current decreases as the electron velocity increases. (author)

  8. Effects of Y incorporation in TaON gate dielectric on electrical performance of GaAs metal-oxide-semiconductor capacitor

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Li Ning; Choi, Hoi Wai; Lai, Pui To [Department of Electrical and Electronic Engineering, The University of Hong Kong (China); Xu, Jing Ping [School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan (China)

    2016-09-15

    In this study, GaAs metal-oxide-semiconductor (MOS) capacitors using Y-incorporated TaON as gate dielectric have been investigated. Experimental results show that the sample with a Y/(Y + Ta) atomic ratio of 27.6% exhibits the best device characteristics: high k value (22.9), low interfacestate density (9.0 x 10{sup 11} cm{sup -2} eV{sup -1}), small flatband voltage (1.05 V), small frequency dispersion and low gate leakage current (1.3 x 10{sup -5}A/cm{sup 2} at V{sub fb} + 1 V). These merits should be attributed to the complementary properties of Y{sub 2}O{sub 3} and Ta{sub 2}O{sub 5}:Y can effectively passivate the large amount of oxygen vacancies in Ta{sub 2}O{sub 5}, while the positively-charged oxygen vacancies in Ta{sub 2}O{sub 5} are capable of neutralizing the effects of the negative oxide charges in Y{sub 2}O{sub 3}. This work demonstrates that an appropriate doping of Y content in TaON gate dielectric can effectively improve the electrical performance for GaAs MOS devices. (copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  9. Mechanical anomaly impact on metal-oxide-semiconductor capacitors on flexible silicon fabric

    KAUST Repository

    Ghoneim, Mohamed T.; Kutbee, Arwa T.; Ghodsi Nasseri, Seyed Faizelldin; Bersuker, G.; Hussain, Muhammad Mustafa

    2014-01-01

    We report the impact of mechanical anomaly on high-κ/metal-oxide-semiconductor capacitors built on flexible silicon (100) fabric. The mechanical tests include studying the effect of bending radius up to 5 mm minimum bending radius with respect

  10. Neutron induced degradation in nitrided pyrogenic field oxide MOS capacitors

    CERN Document Server

    Vaidya, S J; Shaikh, A M; Chandorkar, A N

    2002-01-01

    Neutron induced oxide charge trapping and generation of interface states in MOS capacitors with pyrogenic and nitrided pyrogenic field oxides have been studied. In order to assess the damage due to neutrons alone, it is necessary to account for the damage produced by the accompanying gamma rays from neutron radiation. This is done by measuring the intensity of gamma radiation accompanying neutrons at different neutron fluences at the irradiation position. MOS capacitor structures were subjected to neutron radiation in a swimming pool type of reactor. Other samples from the same batch were then subjected to an equivalent dose of gamma radiation from a Co sup 6 sup 0 source. The difference in the damage observed was used to characterize the damage caused by neutrons. It is observed that neutrons, though uncharged, are capable of causing ionization damage. This damage is found to be significant when the radiation is performed under biased conditions. Nitridation in different ambients is found to improve the radi...

  11. Graphene oxide-based flexible metal–insulator–metal capacitors

    International Nuclear Information System (INIS)

    Bag, A; Hota, M K; Mallik, S; Maiti, C K

    2013-01-01

    This work explores the fabrication of graphene oxide (GO)-based metal–insulator–metal (MIM) capacitors on flexible polyethylene terephthalate (PET) substrates. Electrical properties are studied in detail. A high capacitance density of ∼4 fF µm −2 measured at 1 MHz and permittivity of ∼6 have been obtained. A low voltage coefficient of capacitance, VCC-α, and a low dielectric loss tangent indicate the potential of GO-based MIM capacitors for RF applications. The constant voltage stressing study has shown a high reliability against degradation up to a projected period of 10 years. Degradation in capacitance of the devices on flexible substrates has been studied by bending radius down to 1 cm even up to 6000 times of repeated bending. (paper)

  12. Capacitor Property and Leakage Current Mechanism of ZrO2 Thin Dielectric Films Prepared by Anodic Oxidation

    Science.gov (United States)

    Kamijyo, Masahiro; Onozuka, Tomotake; Shinkai, Satoko; Sasaki, Katsutaka; Yamane, Misao; Abe, Yoshio

    2003-07-01

    Polycrystalline ZrO2 thin film capacitors were prepared by anodizing sputter-deposited Zr films. Electrical measurements are performed for the parallel-plate anodized capacitors with an Al-ZrO2-Zr (metal-insulator-metal) structure, and a high capacitance density (0.6 μF/cm2) and a low dielectric loss of nearly 1% are obtained for a very thin-oxide capacitor anodized at 10 V. In addition, the leakage current density of this capacitor is about 1.8 × 10-8 A/cm2 at an applied voltage of 5 V. However, the leakage current is somewhat larger than that of a low-loss HfO2 capacitor. The leakage current density (J) of ZrO2 capacitors as a function of applied electric field (E) was investigated for several capacitors with different oxide thicknesses, by plotting \\ln(J) vs E1/2 curves. As a result, it is revealed that the conduction mechanism is due to the Poole-Frenkel effect, irrespective of the oxide thickness.

  13. Neutron induced degradation in nitrided pyrogenic field oxide MOS capacitors

    Science.gov (United States)

    Vaidya, S. J.; Sharma, D. K.; Shaikh, A. M.; Chandorkar, A. N.

    2002-09-01

    Neutron induced oxide charge trapping and generation of interface states in MOS capacitors with pyrogenic and nitrided pyrogenic field oxides have been studied. In order to assess the damage due to neutrons alone, it is necessary to account for the damage produced by the accompanying gamma rays from neutron radiation. This is done by measuring the intensity of gamma radiation accompanying neutrons at different neutron fluences at the irradiation position. MOS capacitor structures were subjected to neutron radiation in a swimming pool type of reactor. Other samples from the same batch were then subjected to an equivalent dose of gamma radiation from a Co 60 source. The difference in the damage observed was used to characterize the damage caused by neutrons. It is observed that neutrons, though uncharged, are capable of causing ionization damage. This damage is found to be significant when the radiation is performed under biased conditions. Nitridation in different ambients is found to improve the radiation performance of pyrogenic field oxides with respect to positive charge build up as well as interface state generation. Pyrogenic oxide nitrided in N 2O is found to be the best oxynitride as damage due to neutrons is the least.

  14. Mechanical anomaly impact on metal-oxide-semiconductor capacitors on flexible silicon fabric

    KAUST Repository

    Ghoneim, Mohamed T.

    2014-06-09

    We report the impact of mechanical anomaly on high-κ/metal-oxide-semiconductor capacitors built on flexible silicon (100) fabric. The mechanical tests include studying the effect of bending radius up to 5 mm minimum bending radius with respect to breakdown voltage and leakage current of the devices. We also report the effect of continuous mechanical stress on the breakdown voltage over extended periods of times.

  15. Effects of layer sequence and postdeposition annealing temperature on performance of La2O3 and HfO2 multilayer composite oxides on In0.53Ga0.47As for MOS capacitor application

    Science.gov (United States)

    Wu, Wen-Hao; Lin, Yueh-Chin; Chuang, Ting-Wei; Chen, Yu-Chen; Hou, Tzu-Ching; Yao, Jing-Neng; Chang, Po-Chun; Iwai, Hiroshi; Kakushima, Kuniyuki; Chang, Edward Yi

    2014-03-01

    In this paper, we report on high-k composite oxides that are formed by depositing multiple layers of HfO2 and La2O3 on In0.53Ga0.47As for MOS device application. Both multilayer HfO2 (0.8 nm)/La2O3 (0.8 nm)/In0.53Ga0.47As and La2O3 (0.8 nm)/HfO2 (0.8 nm)/In0.53Ga0.47As MOS structures were investigated. The effects of oxide thickness and postdeposition annealing (PDA) temperature on the interface properties of the composite oxide MOS capacitors were studied. It was found that a low CET of 1.41 nm at 1 kHz was achieved using three-layer composite oxides. On the other hand, a small frequency dispersion of 2.8% and an excellent Dit of 7.0 × 1011 cm-2·eV-1 can be achieved using multiple layers of La2O3 (0.8 nm) and HfO2 (0.8 nm) on the In0.53Ga0.47As MOS capacitor with optimum thermal treatment and layer thickness.

  16. Manganese oxide/graphene oxide composites for high-energyaqueous asymmetric electrochemical capacitors

    CSIR Research Space (South Africa)

    Jafta, CJ

    2013-11-01

    Full Text Available A high-energy aqueous asymmetric electrochemical capacitor was developed using manganese diox-ide ( -MnO2)/graphene oxide (GO) nanocomposites. The nanostructured -MnO2was prepared frommicron-sized commercial electrolytic manganese dioxide (EMD) via...

  17. Transition of hydrated oxide layer for aluminum electrolytic capacitors

    International Nuclear Information System (INIS)

    Chi, Choong-Soo; Jeong, Yongsoo; Ahn, Hong-Joo; Lee, Jong-Ho; Kim, Jung-Gu; Lee, Jun-Hee; Jang, Kyung-Wook; Oh, Han-Jun

    2007-01-01

    A hydrous oxide film for the application as dielectric film is synthesized by immersion of pure aluminum in hot water. From a Rutherford backscattering analysis, the ratio of aluminum to oxygen atoms was found to be 3:2 in the anodized aluminum oxide film, and 2:1 in the hydrous oxide layer. Anodization of the hydrous oxide layer was more effective for the transition of amorphous anodic oxides to the crystalline aluminum oxides

  18. Thermally Reduced Graphene Oxide Electrochemically Activated by Bis-Spiro Quaternary Alkyl Ammonium for Capacitors.

    Science.gov (United States)

    He, Tieshi; Meng, Xiangling; Nie, Junping; Tong, Yujin; Cai, Kedi

    2016-06-08

    Thermally reduced graphene oxide (RGO) electrochemically activated by a quaternary alkyl ammonium-based organic electrolytes/activated carbon (AC) electrode asymmetric capacitor is proposed. The electrochemical activation process includes adsorption of anions into the pores of AC in the positive electrode and the interlayer intercalation of cations into RGO in the negative electrode under high potential (4.0 V). The EA process of RGO by quaternary alkyl ammonium was investigated by X-ray diffraction and electrochemical measurements, and the effects of cation size and structure were extensively evaluated. Intercalation by quaternary alkyl ammonium demonstrates a small degree of expansion of the whole crystal lattice (d002) and a large degree of expansion of the partial crystal lattice (d002) of RGO. RGO electrochemically activated by bis-spiro quaternary alkyl ammonium in propylene carbonate/AC asymmetric capacitor exhibits good activated efficiency, high specific capacity, and stable cyclability.

  19. Memory Effect of Metal-Oxide-Silicon Capacitors with Self-Assembly Double-Layer Au Nanocrystals Embedded in Atomic-Layer-Deposited HfO2 Dielectric

    International Nuclear Information System (INIS)

    Yue, Huang; Hong-Yan, Gou; Qing-Qing, Sun; Shi-Jin, Ding; Wei, Zhang; Shi-Li, Zhang

    2009-01-01

    We report the chemical self-assembly growth of Au nanocrystals on atomic-layer-deposited HfO 2 films aminosilanized by (3-Aminopropyl)-trimethoxysilane aforehand for memory applications. The resulting Au nanocrystals show a density of about 4 × 10 11 cm −2 and a diameter range of 5–8nm. The metal-oxide-silicon capacitor with double-layer Au nanocrystals embedded in HfO 2 dielectric exhibits a large C – V hysteresis window of 11.9V for ±11 V gate voltage sweeps at 1 MHz, a flat-band voltage shift of 1.5 V after the electrical stress under 7 V for 1 ms, a leakage current density of 2.9 × 10 −8 A/cm −2 at 9 V and room temperature. Compared to single-layer Au nanocrystals, the double-layer Au nanocrystals increase the hysteresis window significantly, and the underlying mechanism is thus discussed

  20. A high-performance flexible fibre-shaped electrochemical capacitor based on electrochemically reduced graphene oxide.

    Science.gov (United States)

    Li, Yingru; Sheng, Kaixuan; Yuan, Wenjing; Shi, Gaoquan

    2013-01-11

    A fibre-shaped solid electrochemical capacitor based on electrochemically reduced graphene oxide has been fabricated, exhibiting high specific capacitance and rate capability, long cycling life and attractive flexibility.

  1. Fabrication of ultrafine manganese oxide-decorated carbon nanofibers for high-performance electrochemical capacitors

    Energy Technology Data Exchange (ETDEWEB)

    Yang, Ying; Lee, Sungsik; Brown, Dennis E.; Zhao, Hairui; Li, Xinsong; Jiang, Daqiang; Hao, Shijie; Zhao, Yongxiang; Cong, Daoyong; Zhang, Xin; Ren, Yang

    2016-09-01

    Ultrafine manganese oxide-decorated carbon nanofibers (MnOn-CNF) as a new type of electrode materials are facilely fabricated by direct conversion of Mn, Zn-trimesic acid (H3BTC) metal organic framework fibers (Mn-ZnBTC). The construction and evolution of Mn-ZnBTC precursors are investigated by SEM and in situ high-energy XRD. The manganese oxides are highly dispersed onto the porous carbon nanofibers formed simultaneously, verified by TEM, X-ray absorption fine structure (XAFS), Raman, ICP-AES and N2 adsorption techniques. As expected, the resulting MnOn-CNF composites are highly stable, and can be cycled up to 5000 times with a high capacitance retention ratio of 98% in electrochemical capacitor measurements. They show a high capacitance of up to 179 F g–1 per mass of the composite electrode, and a remarkable capacitance of up to 18290 F g–1 per active mass of the manganese(IV) oxide, significantly exceeding the theoretical specific capacitance of manganese(IV) oxide (1370 F g–1). The maximum energy density is up to 19.7 Wh kg–1 at the current density of 0.25 A g–1, even orders higher than those of reported electric double-layer capacitors and pseudocapacitors. The excellent capacitive performance can be ascribed to the joint effect of easy accessibility, high porosity, tight contact and superior conductivity integrated in final MnOn-CNF composites.

  2. Direct comparison of the electrical properties in metal/oxide/nitride/oxide/silicon and metal/aluminum oxide/nitride/oxide/silicon capacitors with equivalent oxide thicknesses

    Energy Technology Data Exchange (ETDEWEB)

    An, Ho-Myoung; Seo, Yu Jeong; Kim, Hee Dong; Kim, Kyoung Chan; Kim, Jong-Guk [School of Electrical Engineering, Korea University, Seoul 136-713 (Korea, Republic of); Cho, Won-Ju; Koh, Jung-Hyuk [Department of Electronic Materials Engineering, Kwangwoon University, Seoul 139-701 (Korea, Republic of); Sung, Yun Mo [Department of Materials and Science Engineering, Korea University, Seoul 136-713 (Korea, Republic of); Kim, Tae Geun, E-mail: tgkim1@korea.ac.k [School of Electrical Engineering, Korea University, Seoul 136-713 (Korea, Republic of)

    2009-07-31

    We examine the electrical properties of metal/oxide/nitride/oxide/silicon (MONOS) capacitors with two different blocking oxides, SiO{sub 2} and Al{sub 2}O{sub 3}, under the influence of the same electric field. The thickness of the Al{sub 2}O{sub 3} layer is set to 150 A, which is electrically equivalent to a thickness of the SiO{sub 2} layer of 65 A, in the MONOS structure for this purpose. The capacitor with the Al{sub 2}O{sub 3} blocking layer shows a larger capacitance-voltage memory window of 8.6 V, lower program voltage of 7 V, faster program/erase speeds of 10 ms/1 {mu}s, lower leakage current of 100 pA and longer data retention than the one with the SiO{sub 2} blocking layer does. These improvements are attributed to the suppression of the carrier transport to the gate electrode afforded by the use of an Al{sub 2}O{sub 3} blocking layer physically thicker than the SiO{sub 2} one, as well as the effective charge-trapping by Al{sub 2}O{sub 3} at the deep energy levels in the nitride layer.

  3. Effects of Radiation on Capacitor Dielectrics

    Science.gov (United States)

    Bouquet, F. L.; Somoano, R. B.; Frickland, P. O.

    1987-01-01

    Data gathered on key design parameters. Report discusses study of electrical and mechanical properties of irradiated polymer dielectric materials. Data compiled for use by designers of high-energy-density capacitors that operate in presence of ionizing radiation. Study focused on polycarbonates, polyetheretherketones, polymethylpentenes, polyimides (including polyetherimide), polyolefins, polysulfones (including polyethersulfone and polyphenylsulfone), and polyvinylidene fluorides.

  4. Characterization of Interface State in Silicon Carbide Metal Oxide Semiconductor Capacitors

    Science.gov (United States)

    Kao, Wei-Chieh

    Silicon carbide (SiC) has always been considered as an excellent material for high temperature and high power devices. Since SiC is the only compound semiconductor whose native oxide is silicon dioxide (SiO2), it puts SiC in a unique position. Although SiC metal oxide semiconductor (MOS) technology has made significant progress in recent years, there are still a number of issues to be overcome before more commercial SiC devices can enter the market. The prevailing issues surrounding SiC MOSFET devices are the low channel mobility, the low quality of the oxide layer and the high interface state density at the SiC/SiO2 interface. Consequently, there is a need for research to be performed in order to have a better understanding of the factors causing the poor SiC/SiO2 interface properties. In this work, we investigated the generation lifetime in SiC materials by using the pulsed metal oxide semiconductor (MOS) capacitor method and measured the interface state density distribution at the SiC/SiO2 interface by using the conductance measurement and the high-low frequency capacitance technique. These measurement techniques have been performed on n-type and p-type SiC MOS capacitors. In the course of our investigation, we observed fast interface states at semiconductor-dielectric interfaces in SiC MOS capacitors that underwent three different interface passivation processes, such states were detected in the nitrided samples but not observed in PSG-passivated samples. This result indicate that the lack of fast states at PSG-passivated interface is one of the main reasons for higher channel mobility in PSG MOSFETs. In addition, the effect of mobile ions in the oxide on the response time of interface states has been investigated. In the last chapter we propose additional methods of investigation that can help elucidate the origin of the particular interface states, enabling a more complete understanding of the SiC/SiO2 material system.

  5. In situ chemical synthesis of ruthenium oxide/reduced graphene oxide nanocomposites for electrochemical capacitor applications.

    Science.gov (United States)

    Kim, Ji-Young; Kim, Kwang-Heon; Yoon, Seung-Beom; Kim, Hyun-Kyung; Park, Sang-Hoon; Kim, Kwang-Bum

    2013-08-07

    An in situ chemical synthesis approach has been developed to prepare ruthenium oxide/reduced graphene oxide (RGO) nanocomposites. It is found that as the C/O ratio increases, the number density of RuO2 nanoparticles decreases, because the chemical interaction between the Ru ions and the oxygen-containing functional groups provides anchoring sites where the nucleation of particles takes place. For electrochemical capacitor applications, the microwave-hydrothermal process was carried out to improve the conductivity of RGO in RuO2/RGO nanocomposites. The significant improvement in capacitance and high rate capability might result from the RuO2 nanoparticles used as spacers that make the interior layers of the reduced graphene oxide electrode available for electrolyte access.

  6. Numerical Simulation of Tunneling Current in an Anisotropic Metal-Oxide-Semiconductor Capacitor

    Directory of Open Access Journals (Sweden)

    Khairurrijal khairurrijal

    2012-09-01

    Full Text Available In this paper, we have developed a model of the tunneling currents through a high-k dielectric stack in MOS capacitors with anisotropic masses. The transmittance was numerically calculated by employing a transfer matrix method and including longitudinal-transverse kinetic energy coupling which is represented by an electron phase velocity in the gate. The transmittance was then applied to calculate tunneling currents in TiN/HfSiOxN/SiO2/p-Si MOS capacitors. The calculated results show that as the gate electron velocity increases, the transmittance decreases and therefore the tunneling current reduces. The tunneling current becomes lower as the effective oxide thickness (EOT of HfSiOxN layer increases. When the incident electron passed through the barriers in the normal incident to the interface, the electron tunneling process becomes easier. It was also shown that the tunneling current was independent of the substrate orientation. Moreover, the model could be used in designing high speed MOS devices with low tunneling currents.

  7. High-performance symmetric electrochemical capacitor based on graphene foam and nanostructured manganese oxide

    CSIR Research Space (South Africa)

    Bello, A

    2013-01-01

    Full Text Available We have fabricated a symmetric electrochemical capacitor with high energy and power densities based on a composite of graphene foam (GF) with 80 wt% of manganese oxide (MnO(sub2)) deposited by hydrothermal synthesis. Raman spectroscopy and X...

  8. Electronic detection of surface plasmon polaritons by metal-oxide-silicon capacitor

    Directory of Open Access Journals (Sweden)

    Robert E. Peale

    2016-09-01

    Full Text Available An electronic detector of surface plasmon polaritons (SPPs is reported. SPPs optically excited on a metal surface using a prism coupler are detected by using a close-coupled metal-oxide-silicon (MOS capacitor. Incidence-angle dependence is explained by Fresnel transmittance calculations, which also are used to investigate the dependence of photo-response on structure dimensions. Electrodynamic simulations agree with theory and experiment and additionally provide spatial intensity distributions on and off the SPP excitation resonance. Experimental dependence of the photoresponse on substrate carrier type, carrier concentration, and back-contact biasing is qualitatively explained by simple theory of MOS capacitors.

  9. Structural and dielectric characterization of sputtered Tantalum Titanium Oxide thin films for high temperature capacitor applications

    Energy Technology Data Exchange (ETDEWEB)

    Rouahi, A., E-mail: rouahi_ahlem@yahoo.fr [Univ. Grenoble Alpes, G2Elab, F-38000 (France); Laboratoire Matériaux Organisation et Propriétés (LMOP), Université de Tunis El Manar, 2092 Tunis (Tunisia); Challali, F. [Laboratoire des Sciences des Procédés et des Matériaux (LSPM)-CNRS-UPR3407, Université Paris13, 99 Avenue Jean-Baptiste Clément, 93430, Villetaneuse (France); Dakhlaoui, I. [Laboratoire Matériaux Organisation et Propriétés (LMOP), Université de Tunis El Manar, 2092 Tunis (Tunisia); Vallée, C. [CNRS, LTM, CEA-LETI, F-38000 Grenoble (France); Salimy, S. [Institut des Matériaux Jean Rouxel (IMN) UMR CNRS 6502, Université de Nantes, 2, rue de la Houssinière, B.P. 32229, 44322, Nantes, Cedex 3 (France); Jomni, F.; Yangui, B. [Laboratoire Matériaux Organisation et Propriétés (LMOP), Université de Tunis El Manar, 2092 Tunis (Tunisia); Besland, M.P.; Goullet, A. [Institut des Matériaux Jean Rouxel (IMN) UMR CNRS 6502, Université de Nantes, 2, rue de la Houssinière, B.P. 32229, 44322, Nantes, Cedex 3 (France); Sylvestre, A. [Univ. Grenoble Alpes, G2Elab, F-38000 (France)

    2016-05-01

    In this study, the dielectric properties of metal-oxide-metal capacitors based on Tantalum Titanium Oxide (TiTaO) thin films deposited by reactive magnetron sputtering on aluminum bottom electrode are investigated. The structure of the films was characterized by Atomic Force Microscopy, X-ray diffraction and X-ray photoelectron spectroscopy. The dielectric properties of TiTaO thin films were studied by complex impedance spectroscopy over a wide frequency range (10{sup -2} - to 10{sup 5} Hz) and temperatures in -50 °C to 325 °C range. The contributions of different phases, phases’ boundaries and conductivity effect were highlighted by Cole – Cole diagram (ε” versus ε’). Two relaxation processes have been identified in the electric modulus plot. A first relaxation process appears at low temperature with activation energy of 0.37 eV and it is related to the motion of Ti{sup 4+} (Skanavi’s model). A second relaxation process at high temperature is related to Maxwell-Wagner-Sillars relaxation with activation energy of 0.41 eV. - Highlights: • Titanium Tantalum Oxide thin films are grown on Aluminum substrate. • The existence of phases was confirmed by X-ray photoelectron spectroscopy. • Conductivity effect appears in Cole-Cole plot. • At low temperatures, a relaxation phenomenon obeys to Skanavi’s model. • Maxwell-Wagner-Sillars polarization is processed at high temperatures.

  10. Thickness dependence of the switching voltage in all-oxide ferroelectric thin-film capacitors prepared by pulsed laser deposition

    NARCIS (Netherlands)

    Cillessen, J.F.M.; Prins, M.W.J.; Wolf, R.M.

    1997-01-01

    Thin-film ferroelectric capacitors consisting of PbZr0.53Ti0.47O3 sandwiched between La0.5Sr0.5CoO3 electrodes have been deposited using pulsed laser deposition. The combination of oxidic perovskite-type materials results in capacitors with a coercive field (Ec) which is comparable with values for

  11. Equivalent distributed capacitance model of oxide traps on frequency dispersion of C-V curve for MOS capacitors

    Science.gov (United States)

    Lu, Han-Han; Xu, Jing-Ping; Liu, Lu; Lai, Pui-To; Tang, Wing-Man

    2016-11-01

    An equivalent distributed capacitance model is established by considering only the gate oxide-trap capacitance to explain the frequency dispersion in the C-V curve of MOS capacitors measured for a frequency range from 1 kHz to 1 MHz. The proposed model is based on the Fermi-Dirac statistics and the charging/discharging effects of the oxide traps induced by a small ac signal. The validity of the proposed model is confirmed by the good agreement between the simulated results and experimental data. Simulations indicate that the capacitance dispersion of an MOS capacitor under accumulation and near flatband is mainly caused by traps adjacent to the oxide/semiconductor interface, with negligible effects from the traps far from the interface, and the relevant distance from the interface at which the traps can still contribute to the gate capacitance is also discussed. In addition, by excluding the negligible effect of oxide-trap conductance, the model avoids the use of imaginary numbers and complex calculations, and thus is simple and intuitive. Project supported by the National Natural Science Foundation of China (Grant Nos. 61176100 and 61274112), the University Development Fund of the University of Hong Kong, China (Grant No. 00600009), and the Hong Kong Polytechnic University, China (Grant No. 1-ZVB1).

  12. Equivalent distributed capacitance model of oxide traps on frequency dispersion of C – V curve for MOS capacitors

    International Nuclear Information System (INIS)

    Lu Han-Han; Xu Jing-Ping; Liu Lu; Lai Pui-To; Tang Wing-Man

    2016-01-01

    An equivalent distributed capacitance model is established by considering only the gate oxide-trap capacitance to explain the frequency dispersion in the C – V curve of MOS capacitors measured for a frequency range from 1 kHz to 1 MHz. The proposed model is based on the Fermi–Dirac statistics and the charging/discharging effects of the oxide traps induced by a small ac signal. The validity of the proposed model is confirmed by the good agreement between the simulated results and experimental data. Simulations indicate that the capacitance dispersion of an MOS capacitor under accumulation and near flatband is mainly caused by traps adjacent to the oxide/semiconductor interface, with negligible effects from the traps far from the interface, and the relevant distance from the interface at which the traps can still contribute to the gate capacitance is also discussed. In addition, by excluding the negligible effect of oxide-trap conductance, the model avoids the use of imaginary numbers and complex calculations, and thus is simple and intuitive. (paper)

  13. Study on oxidization of Ru and its application as electrode of PZT capacitor for FeRAM

    International Nuclear Information System (INIS)

    Jia Ze; Ren Tianling; Liu Tianzhi; Hu Hong; Zhang Zhigang; Xie Dan; Liu Litian

    2007-01-01

    Oxidization for Ru through anneal with plenteous oxygen atmosphere and its application as the top electrode of sol-gel PZT capacitor are investigated in this study. PZT capacitor with RuO 2 or oxygen-doped Ru as top electrode can be obtained from Ru/PZT/Pt capacitor through slow-rate anneal at 650 deg. C for 20 min in cannulation furnace. It has larger remanent polarization, better rectangle shape, better fatigue properties and lower leakage current than the other capacitors with PZT film prepared by the same process and different top electrodes in this study. Plenteous oxygen atmosphere and 650 deg. C in cannulation furnace are important conditions for the oxidation of Ru and renewed crystallization of PZT in this capacitor. Plenteous oxygen at interface can compensate the oxygen vacancies at PZT/electrode interface, which results in the above good characteristics

  14. Charge separation technique for metal-oxide-silicon capacitors in the presence of hydrogen deactivated dopants

    International Nuclear Information System (INIS)

    Witczak, Steven C.; Winokur, Peter S.; Lacoe, Ronald C.; Mayer, Donald C.

    2000-01-01

    An improved charge separation technique for metal-oxide-silicon (MOS) capacitors is presented which accounts for the deactivation of substrate dopants by hydrogen at elevated irradiation temperatures or small irradiation biases. Using high-frequency capacitance-voltage (C-V) measurements, radiation-induced inversion voltage shifts are separated into components due to oxide trapped charge, interface traps and deactivated dopants, where the latter is computed from a reduction in Si capacitance. In the limit of no radiation-induced dopant deactivation, this approach reduces to the standard midgap charge separation technique used widely for the analysis of room-temperature irradiations. The technique is demonstrated on a p-type MOS capacitor irradiated with 60 Co γ-rays at 100 C and zero bias, where the dopant deactivation is significant

  15. Effect of Reverse Bias Stress on Leakage Currents and Breakdown Voltages of Solid Tantalum Capacitors

    Science.gov (United States)

    Teverovsky, Alexander A.

    2011-01-01

    The majority of solid tantalum capacitors are produced by high-temperature sintering of a fine tantalum powder around a tantalum wire followed by electrolytic anodization that forms a thin amorphous Ta2O5 dielectric layer and pyrolysis of manganese nitrite on the oxide to create a conductive manganese dioxide electrode. A contact to tantalum wire is used as anode terminal and to the manganese layer as a cathode terminal of the device. This process results in formation of an asymmetric Ta -- Ta2O5 -- MnO2 capacitor that has different characteristics at forward (positive bias applied to tantalum) and reverse (positive bias applied to manganese cathode) voltages. Reverse bias currents might be several orders of magnitude larger than forward leakage currents so I-V characteristics of tantalum capacitors resemble characteristics of semiconductor rectifiers. Asymmetric I-V characteristics of Ta -- anodic Ta2O5 systems have been observed at different top electrode materials including metals, electrolytes, conductive polymers, and manganese oxide thus indicating that this phenomenon is likely related to the specifics of the Ta -- Ta2O5 interface. There have been multiple attempts to explain rectifying characteristics of capacitors employing anodic tantalum pentoxide dielectrics. A brief review of works related to reverse bias (RB) behavior of tantalum capacitors shows that the mechanism of conduction in Ta -- Ta2O5 systems is still not clear and more testing and analysis is necessary to understand the processes involved. If tantalum capacitors behave just as rectifiers, then the assessment of the safe reverse bias operating conditions would be a relatively simple task. Unfortunately, these parts can degrade with time under reverse bias significantly, and this further complicates analysis of the I-V characteristics and establishing safe operating areas of the parts. On other hand, time dependence of reverse currents might provide additional information for investigation of

  16. Influence of oxidation temperature on the interfacial properties of n-type 4H-SiC MOS capacitors

    Energy Technology Data Exchange (ETDEWEB)

    Jia, Yifan; Lv, Hongliang [School of Microelectronics, Xidian University, Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, Xi’an 710071 (China); Song, Qingwen, E-mail: qwsong@xidian.edu.cn [School of Microelectronics, Xidian University, Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, Xi’an 710071 (China); School of Advanced Materials and Nanotechnology, Xidian University, Xi’an 710071 (China); Tang, Xiaoyan, E-mail: xytang@xidian.edu.cn [School of Microelectronics, Xidian University, Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, Xi’an 710071 (China); Xiao, Li; Wang, Liangyong; Tang, Guangming [Zhongxing Telecommunication Equipment Corporation, Shenzhen 518057 (China); Zhang, Yimen; Zhang, Yuming [School of Microelectronics, Xidian University, Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, Xi’an 710071 (China)

    2017-03-01

    Highlights: • Effect of oxidation temperature on interfacial properties of SiO{sub 2}/SiC is investigated. • Raising the oxidation temperature effectively decreases the density of NITs and N{sub eff}. • The higher oxidation temperature reduces the surface RMS roughness of the grow SiO{sub 2}. • SIMS and XPS results reveal the improvement mechanism of high temperature oxidation. - Abstract: The effect of oxidation temperature on interfacial properties of n-type 4H-SiC metal-oxide-semiconductor capacitors has been systematically investigated. Thermal dry oxidation process with three different oxidation temperatures 1200 °C, 1300 °C and 1350 °C were employed to grow SiO{sub 2} dielectric, following by the standard post-oxidation annealing (POA) in NO ambience at 1175 °C for 2 h. The root mean square (RMS) roughness measured by Atomic Force Microscopy for the thermally grown SiO{sub 2} before POA process is reduced with increasing the oxidation temperature, obtaining an atomically flat surface with a RMS of 0.157 nm from the sample oxidized at 1350 °C. Several kinds of electrical measurements were used to evaluate the densities of near interface traps and effective fixed dielectric charge for the samples, exhibiting a trend reduced with increasing the oxidation temperature. The interface state density of 3 × 10{sup 11} cm{sup −2}eV{sup −1} at 0.2 eV from the conduction band edge was achieved from conductance method measurement for the sample oxidized at 1350 °C. The results from Secondary Ion Mass Spectroscopy and X-ray Photoelectron Spectroscopy demonstrate that high oxidation temperature can reduce the width of transition layer, the excess Si and silicon suboxide compositions near the interface, leading to effective improvement of the interfacial properties.

  17. An Aqueous Metal-Ion Capacitor with Oxidized Carbon Nanotubes and Metallic Zinc Electrodes

    Energy Technology Data Exchange (ETDEWEB)

    Tian, Yuheng; Amal, Rose; Wang, Da-Wei, E-mail: da-wei.wang@unsw.edu.au [School of Chemical Engineering, The University of New South Wales (UNSW), Sydney, NSW (Australia)

    2016-10-03

    An aqueous metal ion capacitor comprising of a zinc anode, oxidized carbon nanotubes (oCNTs) cathode, and a zinc sulfate electrolyte is reported. Since the shuttling cation is Zn{sup 2+}, this typical metal ion capacitor is named as zinc-ion capacitor (ZIC). The ZIC integrates the divalent zinc stripping/plating chemistry with the surface-enabled pseudocapacitive cation adsorption/desorption on oCNTs. The surface chemistry and crystallographic structure of oCNTs were extensively characterized by combining X-ray photoelectron spectroscopy, Fourier-transformed infrared spectroscopy, Raman spectroscopy, and X-ray powder diffraction. The function of the surface oxygen groups in surface cation storage was elucidated by a series of electrochemical measurement and the surface-enabled ZIC showed better performance than the ZIC with an un-oxidized CNT cathode. The reaction mechanism at the oCNT cathode involves the additional reversible Faradaic process, while the CNTs merely show electric double layer capacitive behavior involving a non-Faradaic process. The aqueous hybrid ZIC comprising the oCNT cathode exhibited a specific capacitance of 20 mF cm{sup −2} (corresponding to 53 F g{sup −1}) in the range of 0–1.8 V at 10 mV s{sup −1} and a stable cycling performance up to 5000 cycles.

  18. Structures and electrochemical performances of pyrolized carbons from graphite oxides for electric double-layer capacitor

    Science.gov (United States)

    Kim, Ick-Jun; Yang, Sunhye; Jeon, Min-Je; Moon, Seong-In; Kim, Hyun-Soo; Lee, Yoon-Pyo; An, Kye-Hyeok; Lee, Young-Hee

    The structural features and the electrochemical performances of pyrolized needle cokes from oxidized cokes are examined and compared with those of KOH-activated needle coke. The structure of needle coke is changed to a single phase of graphite oxide after oxidation treatment with an acidic solution having an NaClO 3/needle coke composition ratio of above 7.5, and the inter-layer distance of the oxidized needle coke is expanded to 6.9 Å with increasing oxygen content. After heating at 200 °C, the oxidized needle coke is reduced to a graphite structure with an inter-layer distance of 3.6 Å. By contrast, a change in the inter-layer distance in KOH-activated needle coke is not observed. An intercalation of pyrolized needle coke, observed on first charge, occurs at 1.0 V. This value is lower than that of KOH-activation needle coke. A capacitor using pyrolized needle coke exhibits a lower internal resistance of 0.57 Ω in 1 kHz, and a larger capacitance per weight and volume of 30.3 F g -1 and 26.9 F ml -1, in the two-electrode system over the potential range 0-2.5 V compared with those of a capacitor using KOH-activation of needle coke. This better electrochemical performance is attributed to a distorted graphene layer structure derived from the process of the inter-layer expansion and shrinkage.

  19. Electrochemical capacitor

    Science.gov (United States)

    Anderson, Marc A.; Liu, Kuo -Chuan; Mohr, Charles M.

    1999-10-05

    An inexpensive porous metal oxide material having high surface area, good conductivity and high specific capacitance is advantageously used in an electrochemical capacitor. The materials are formed in a sol-gel process which affords control over the properties of the resultant metal oxide materials.

  20. Nickel oxide/hydroxide nanoplatelets synthesized by chemical precipitation for electrochemical capacitors

    International Nuclear Information System (INIS)

    Wu, M.-S.; Hsieh, H.-H.

    2008-01-01

    Nickel hydroxide powder prepared by directly chemical precipitation method at room temperature has a nanoplatelet-like morphology and could be converted into nickel oxide at annealing temperature higher than 300 deg. C, confirmed by the thermal gravimetric analysis and X-ray diffraction. Annealing temperature influences significantly both the electrical conductivity and the specific surface area of nickel oxide/hydroxide powder, and consequently determines the capacitor behavior. Electrochemical capacitive behavior of the synthesized nickel hydroxide/oxide film is investigated by cyclic voltammetry and electrochemical impedance spectroscope methods. After 300 deg. C annealing, the highest specific capacitance of 108 F g -1 is obtained at scan rate of 10 mV s -1 . When annealing temperature is lower than 300 deg. C, the electrical conductivity of nickel hydroxide dominates primarily the capacitive behavior. When annealing temperature is higher than 300 deg. C, both electrical conductivity and specific surface area of the nickel oxide dominate the capacitive behavior

  1. High permittivity materials for oxide gate stack in Ge-based metal oxide semiconductor capacitors

    Energy Technology Data Exchange (ETDEWEB)

    Molle, Alessandro, E-mail: alessandro.molle@mdm.infm.i [Laboratorio Nazionale MDM, CNR-INFM, via C. Olivetti 2, 20041 Agrate Brianza, Milano (Italy); Baldovino, Silvia [Laboratorio Nazionale MDM, CNR-INFM, via C. Olivetti 2, 20041 Agrate Brianza, Milano (Italy); Dipartimento di Scienza dei Materiali, Universita degli Studi di Milano Bicocca, Milano (Italy); Spiga, Sabina [Laboratorio Nazionale MDM, CNR-INFM, via C. Olivetti 2, 20041 Agrate Brianza, Milano (Italy); Fanciulli, Marco [Laboratorio Nazionale MDM, CNR-INFM, via C. Olivetti 2, 20041 Agrate Brianza, Milano (Italy); Dipartimento di Scienza dei Materiali, Universita degli Studi di Milano Bicocca, Milano (Italy)

    2010-01-01

    In the effort to ultimately shrink the size of logic devices towards a post-Si era, the integration of Ge as alternative channel material for high-speed p-MOSFET devices and the concomitant coupling with high permittivity dielectrics (high-k) as gate oxides is currently a key-challenge in microelectronics. However, the Ge option still suffers from a number of unresolved drawbacks and open issues mainly related to the thermodynamic and electrical compatibility of Ge substrates with high-k gate stack. Strictly speaking, two main concerns can be emphasized. On one side is the dilemma on which chemical/physical passivation is more suitable to minimize the unavoidable presence of electrically active defects at the oxide/semiconductor interface. On the other side, overcoming the SiO{sub 2} gate stack opens the route to a number of potentially outperforming high-k oxides. Two deposition approaches were here separately adopted to investigate the high-k oxide growth on Ge substrates, the molecular beam deposition (MBD) of Gd{sub 2}O{sub 3} and the atomic layer deposition (ALD) of HfO{sub 2}. In the MBD framework epitaxial and amorphous Gd{sub 2}O{sub 3} films were grown onto GeO{sub 2}-passivated Ge substrates. In this case, Ge passivation was achieved by exploiting the Ge{sup 4+} bonding state in GeO{sub 2} ultra-thin interface layers intentionally deposited in between Ge and the high-k oxide by means of atomic oxygen exposure to Ge. The composition of the interface layer has been characterized as a function of the oxidation temperature and evidence of Ge dangling bonds at the GeO{sub 2}/Ge interface has been reported. Finally, the electrical response of MOS capacitors incorporating Gd{sub 2}O{sub 3} and GeO{sub 2}-passivated Ge substrates has been checked by capacitance-voltage measurements. On the other hand, the structural and electrical properties of HfO{sub 2} films grown by ALD on Ge by using different oxygen precursors, i.e. H{sub 2}O, Hf(O{sup t}Bu){sub 2}(mmp

  2. Nanosized Ni-Mn Oxides Prepared by the Citrate Gel Process and Performances for Electrochemical Capacitors

    Institute of Scientific and Technical Information of China (English)

    Jianxin ZHOU; Xiangqian SHEN; Maoxiang JING

    2006-01-01

    Nanosized Ni-Mn oxide powders have been successfully prepared by thermal decomposition of the Ni-Mn citrate gel precursors. The powder materials derived from calcination of the gel precursors with various molar ratios of nickel and manganese at different temperatures and time were characterized using thermal analysis (TG-DSC), scanning electron microscopy (SEM), X-ray diffraction (XRD) and Brunauer-Emmet-Teller (BET).The optimized processing conditions of calcination at 400℃ for 1 h with Ni/Mn molar ratio 6 were proved to produce the nanosized Ni-Mn oxide powders with a high specific surface area of 109.62 m2/g and nanometer particle sizes of 15~30 nm. The capacitance characteristics of the nanosized Ni-Mn oxide electrode in various concentrations of KOH solutions were studied by the cyclic voltammetry (CV) and exhibited both a doublelayer capacitance and a Faradaic capacitance which could be attributed to the electrode consisting of Ni-Mn oxides and residual carbons from the organic gel thermal decomposition. A specific capacitance of 194.8 F/g was obtained for the electrode at the sweep rate of 10 mV/s in 4 mol/L KOH electrolyte and the capacitor showed quite high cyclic stability and is promising for advanced electrochemical capacitors.

  3. Ionic behavior of organic-inorganic metal halide perovskite based metal-oxide-semiconductor capacitors.

    Science.gov (United States)

    Wang, Yucheng; Zhang, Yuming; Pang, Tiqiang; Xu, Jie; Hu, Ziyang; Zhu, Yuejin; Tang, Xiaoyan; Luan, Suzhen; Jia, Renxu

    2017-05-24

    Organic-inorganic metal halide perovskites are promising semiconductors for optoelectronic applications. Despite the achievements in device performance, the electrical properties of perovskites have stagnated. Ion migration is speculated to be the main contributing factor for the many unusual electrical phenomena in perovskite-based devices. Here, to understand the intrinsic electrical behavior of perovskites, we constructed metal-oxide-semiconductor (MOS) capacitors based on perovskite films and performed capacitance-voltage (C-V) and current-voltage (I-V) measurements of the capacitors. The results provide direct evidence for the mixed ionic-electronic transport behavior within perovskite films. In the dark, there is electrical hysteresis in both the C-V and I-V curves because the mobile negative ions take part in charge transport despite frequency modulation. However, under illumination, the large amount of photoexcited free carriers screens the influence of the mobile ions with a low concentration, which is responsible for the normal C-V properties. Validation of ion migration for the gate-control ability of MOS capacitors is also helpful for the investigation of perovskite MOS transistors and other gate-control photovoltaic devices.

  4. Electrophoretically deposited graphene oxide and carbon nanotube composite for electrochemical capacitors

    International Nuclear Information System (INIS)

    Ajayi, Obafunso A; Wong, Chee Wei; Guitierrez, Daniel H; Peaslee, David; Cheng, Arthur; Chen, Bin; Gao, Theodore

    2015-01-01

    We report a scalable one-step electrode fabrication approach for synthesizing composite carbon-based supercapacitors with synergistic outcomes. Multi-walled carbon nanotubes (MWCNTs) were successfully integrated into our modified electrophoretic deposition process to directly form composite MWCNT–GO electrochemical capacitor electrodes (where GO is graphene oxide) with superior performance to solely GO electrodes. The measured capacitance improved threefold, reaching a maximum specific capacitance of 231 F g"−"1. Upon thermal reduction, MWCNT–GO electrode sheet resistance decreased by a factor of 8, significantly greater than the 2× decrease of those without MWCNTs. (paper)

  5. Pressure Effects Analysis of National Ignition Facility Capacitor Module Events

    International Nuclear Information System (INIS)

    Brereton, S; Ma, C; Newton, M; Pastrnak, J; Price, D; Prokosch, D

    1999-01-01

    Capacitors and power conditioning systems required for the National Ignition Facility (NIF) have experienced several catastrophic failures during prototype demonstration. These events generally resulted in explosion, generating a dramatic fireball and energetic shrapnel, and thus may present a threat to the walls of the capacitor bay that houses the capacitor modules. The purpose of this paper is to evaluate the ability of the capacitor bay walls to withstand the overpressure generated by the aforementioned events. Two calculations are described in this paper. The first one was used to estimate the energy release during a fireball event and the second one was used to estimate the pressure in a capacitor module during a capacitor explosion event. Both results were then used to estimate the subsequent overpressure in the capacitor bay where these events occurred. The analysis showed that the expected capacitor bay overpressure was less than the pressure tolerance of the walls. To understand the risk of the above events in NIF, capacitor module failure probabilities were also calculated. This paper concludes with estimates of the probability of single module failure and multi-module failures based on the number of catastrophic failures in the prototype demonstration facility

  6. Effect of capacitor loss on discharging characteristics of xenon flash lamp

    International Nuclear Information System (INIS)

    Zhang Chu; Lin Dejiang; Xu Chunmei; Shen Hongbin; Chen Xiaohan

    2012-01-01

    The effect of storage capacitor's loss on the discharging characteristics of the xenon flash lamp was studied, and the xenon flash lamp discharging circuit was analyzed and improved. The capacitor can be equivalent to a series of an ideal capacitor and loss resistance. The improved formula of the xenon lamp discharging characteristics was given when actual capacitance loss is not zero, and the xenon lamp discharging current and discharging power are calculated and analyzed in detail with the increase of the capacitor loss. The results show that the increase of loss will lead to the decrease of xenon lamp discharging current and peak power and the xenon lamp flash time, and influence laser pumping efficiency. The loss will also lead to the capacitor inverse charging in LC discharging circuit; this will influence normal working of the capacitor and decrease the lift of the xenon lamp. The actual energy storage capacitor charging and discharging experiments show that the increase of capacitor loss will lead to the decrease of xenon lamp light-emitting waveform peak, shortening of the flash time and increase of the electrode sputter, thus verity, the reasonableness of theoretical analysis. In addition, the experiments show that environmental factors have very significant impact on the increase of the storage capacitor loss. (authors)

  7. Modified and improved Hummer's synthesis of graphene oxide for capacitors applications

    Directory of Open Access Journals (Sweden)

    M. Sohail

    2017-09-01

    Full Text Available In the present study, we explored whether different characteristics of graphene oxide prepared via two different routes have been modified. It was observed that samples obtained via both routes have nearly the same physico-chemical characteristics. Spectral (FT-IR and UV-vis studies showed the synthesis and optical properties of the materials respectively. Optical band gap (Eg was found to be in the range of 3.1–3.9 eV. Thermal studies demonstrated that the prepared materials exhibited stability up to 550 °C. X-ray diffraction evaluated the semi-crystalline nature of the materials with crystallite size in the range from 27–28 nm. Dielectric study showed that the materials are active at low frequency range due to interfacial polarization while at higher frequency the dipoles present in the materials show relaxation behavior. The lowest value of dielectric tan. loss (0.03–0.39 acquired by both the samples is of immense importance for capacitors. Based on the observations, graphene oxide prepared is suggested to be used a possible material in thermally stable capacitors and in composite materials.

  8. Multilayered films of cobalt oxyhydroxide nanowires/manganese oxide nanosheets for electrochemical capacitor

    Energy Technology Data Exchange (ETDEWEB)

    Zheng, Huajun [State Key Laboratory Breeding Base of Green Chemistry Synthesis Technology, Zhejiang University of Technology, Hangzhou 310014 (China); ARC Centre of Excellence for Functional Nanomaterials, School of Chemical Engineering and AIBN, The University of Queensland, St Lucia, Brisbane, QLD 4072 (Australia); Tang, Fengqiu; Mukherji, Aniruddh; Yan, Xiaoxia; Wang, Lianzhou (Max) Lu, Gao Qing [ARC Centre of Excellence for Functional Nanomaterials, School of Chemical Engineering and AIBN, The University of Queensland, St Lucia, Brisbane, QLD 4072 (Australia); Lim, Melvin [Division of Environmental and Water Resources Engineering, School of Civil and Environmental Engineering, Nanyang Technological University, 639798 (Singapore)

    2010-01-15

    Multilayered films of cobalt oxyhydroxide nanowires (CoOOHNW) and exfoliated manganese oxide nanosheet (MONS) are fabricated by potentiostatic deposition and electrostatic self-assembly on indium-tin oxide coated glass substrates. The morphology and chemical composition of these films are characterized by scanning electron microscopy (SEM) and X-ray photoelectron spectra (XPS) and the potential application as electrochemical supercapacitors are investigated using cyclic voltammetry and charge-discharge measurements. These ITO/CoOOHNW/MONS multilayered film electrodes exhibit excellent electrochemical capacitance properties, including high specific capacitance (507 F g{sup -1}) and long cycling durability (less 2% capacity loss after 5000 charge/discharge cycles). These characteristics indicate that these newly developed films may find important application for electrochemical capacitors. (author)

  9. Influence of oxidation level on capacitance of electrochemical capacitors fabricated with carbon nanotube/carbon paper composites

    International Nuclear Information System (INIS)

    Hsieh, C.-T.; Chen, W.-Y.; Cheng, Y.-S.

    2010-01-01

    Gaseous oxidation of carbon papers (CPs) decorated with carbon nanotubes (CNTs) with varying degrees of oxidation was conducted to investigate the influence of surface oxides on the performance of electrochemical capacitors fabricated with oxidized CNT/CP composites. The oxidation period was found to significantly enhance the O/C atomic ratio on the composites, and the increase in oxygen content upon oxidation is mainly contributed by the formation of C=O and C-O groups. The electrochemical behavior of the capacitors was tested in 1 M H 2 SO 4 within a potential of 0 and 1 V vs. Ag/AgCl. Both superhydrophilicity and specific capacitance of the oxidized CNT/CP composites were found to increase upon oxidation treatment. A linearity increase of capacitance with O/C ratio can be attributed to the increase of the population of surface oxides on CNTs, which imparts excess sites for redox reaction (pseudocapacitance) and for the formation of double-layer (double-layer capacitance). The technique of ac impedance combined with equivalent circuit clearly showed that oxidized CNT/CP capacitor imparts not only enhanced capacitance but also a low equivalent series resistance.

  10. Synthesis and characterization of a nanocomposite of goethite nanorods and reduced graphene oxide for electrochemical capacitors

    International Nuclear Information System (INIS)

    Shou Qingliang; Cheng Jipeng; Zhang Li; Nelson, Bradley J.; Zhang Xiaobin

    2012-01-01

    We report a one-step synthesis of a nanocomposite of goethite (α-FeOOH) nanorods and reduced graphene oxide (RGO) using a solution method in which ferrous cations serve as a reducing agent of graphite oxide (GO) to graphene and a precursor to grow goethite nanorods. As-prepared goethite nanorods have an average length of 200 nm and a diameter of 30 nm and are densely attached on both sides of the RGO sheets. The electrochemical properties of the nanocomposite were characterized by cyclic voltammetry (CV) and chronopotentiometry (CP) charge–discharge tests. The results showed that goethite/RGO composites have a high electrochemical capacitance of 165.5 F g −1 with an excellent recycling capability making the material promising for electrochemical capacitors. - Graphical abstract: The reduced graphene oxide sheets are decorated with goethite nanorods. The as-prepared composite exhibits a high electrochemical capacitance with good recycling capability, which is promising for supercapacitor applications. Higlights: ► Ferrous ions act as reductant of graphite oxide and precursor of goethite nanorods. ► Goethite nanorods are attached on both sides of the reduced graphene oxide sheets. ► Composite exhibits a high specific capacitance and a good recycling capability. ► Composite is promising for supercapacitor applications.

  11. Influence of post-annealing on the electrical properties of metal/oxide/silicon nitride/oxide/silicon capacitors for flash memories

    International Nuclear Information System (INIS)

    Kim, Hee Dong; An, Ho-Myoung; Kim, Kyoung Chan; Seo, Yu Jeong; Kim, Tae Geun

    2008-01-01

    We report the effect of post-annealing on the electrical properties of metal/oxide/silicon nitride/oxide/silicon (MONOS) capacitors. Four samples, namely as-deposited and annealed at 750, 850 and 950 °C for 30 s in nitrogen ambient by a rapid thermal process, were prepared and characterized for comparison. The best performance with the largest memory window of 4.4 V and the fastest program speed of 10 ms was observed for the sample annealed at 850 °C. In addition, the highest traps density of 6.84 × 10 18 cm −3 was observed with ideal trap distributions for the same sample by capacitance–voltage (C–V) measurement. These results indicate that the memory traps in the ONO structure can be engineered by post-annealing to improve the electrical properties of the MONOS device

  12. Ferroelectric capacitor with reduced imprint

    Science.gov (United States)

    Evans, Jr., Joseph T.; Warren, William L.; Tuttle, Bruce A.; Dimos, Duane B.; Pike, Gordon E.

    1997-01-01

    An improved ferroelectric capacitor exhibiting reduced imprint effects in comparison to prior art capacitors. A capacitor according to the present invention includes top and bottom electrodes and a ferroelectric layer sandwiched between the top and bottom electrodes, the ferroelectric layer comprising a perovskite structure of the chemical composition ABO.sub.3 wherein the B-site comprises first and second elements and a dopant element that has an oxidation state greater than +4. The concentration of the dopant is sufficient to reduce shifts in the coercive voltage of the capacitor with time. In the preferred embodiment of the present invention, the ferroelectric element comprises Pb in the A-site, and the first and second elements are Zr and Ti, respectively. The preferred dopant is chosen from the group consisting of Niobium, Tantalum, and Tungsten. In the preferred embodiment of the present invention, the dopant occupies between 1 and 8% of the B-sites.

  13. Leakage Current Degradation Due to Ion Drift and Diffusion in Tantalum and Niobium Oxide Capacitors

    Directory of Open Access Journals (Sweden)

    Kuparowitz Martin

    2017-06-01

    Full Text Available High temperature and high electric field applications in tantalum and niobium capacitors are limited by the mechanism of ion migration and field crystallization in a tantalum or niobium pentoxide insulating layer. The study of leakage current (DCL variation in time as a result of increasing temperature and electric field might provide information about the physical mechanism of degradation. The experiments were performed on tantalum and niobium oxide capacitors at temperatures of about 125°C and applied voltages ranging up to rated voltages of 35 V and 16 V for tantalum and niobium oxide capacitors, respectively. Homogeneous distribution of oxygen vacancies acting as positive ions within the pentoxide layer was assumed before the experiments. DCL vs. time characteristics at a fixed temperature have several phases. At the beginning of ageing the DCL increases exponentially with time. In this period ions in the insulating layer are being moved in the electric field by drift only. Due to that the concentration of ions near the cathode increases producing a positively charged region near the cathode. The electric field near the cathode increases and the potential barrier between the cathode and insulating layer decreases which results in increasing DCL. However, redistribution of positive ions in the insulator layer leads to creation of a ion concentration gradient which results in a gradual increase of the ion diffusion current in the direction opposite to the ion drift current component. The equilibrium between the two for a given temperature and electric field results in saturation of the leakage current value. DCL vs. time characteristics are described by the exponential stretched law. We found that during the initial part of ageing an exponent n = 1 applies. That corresponds to the ion drift motion only. After long-time application of the electric field at a high temperature the DCL vs. time characteristics are described by the exponential

  14. High-performance symmetric electrochemical capacitor based on graphene foam and nanostructured manganese oxide

    Directory of Open Access Journals (Sweden)

    Abdulhakeem Bello

    2013-08-01

    Full Text Available We have fabricated a symmetric electrochemical capacitor with high energy and power densities based on a composite of graphene foam (GF with ∼80 wt% of manganese oxide (MnO2 deposited by hydrothermal synthesis. Raman spectroscopy and X-ray diffraction measurements showed the presence of nanocrystalline MnO2 on the GF, while scanning and transmission electron microscopies showed needle-like manganese oxide coated and anchored onto the surface of graphene. Electrochemical measurements of the composite electrode gave a specific capacitance of 240 Fg−1 at a current density of 0.1 Ag−1 for symmetric supercapacitors using a two-electrode configuration. A maximum energy density of 8.3 Whkg−1 was obtained, with power density of 20 kWkg−1 and no capacitance loss after 1000 cycles. GF is an excellent support for pseudo-capacitive oxide materials such as MnO2, and the composite electrode provided a high energy density due to a combination of double-layer and redox capacitance mechanisms.

  15. Deep electron traps in HfO_2-based metal-oxide-semiconductor capacitors

    International Nuclear Information System (INIS)

    Salomone, L. Sambuco; Lipovetzky, J.; Carbonetto, S.H.; García Inza, M.A.; Redin, E.G.; Campabadal, F.

    2016-01-01

    Hafnium oxide (HfO_2) is currently considered to be a good candidate to take part as a component in charge-trapping nonvolatile memories. In this work, the electric field and time dependences of the electron trapping/detrapping processes are studied through a constant capacitance voltage transient technique on metal-oxide-semiconductor capacitors with atomic layer deposited HfO_2 as insulating layer. A tunneling-based model is proposed to reproduce the experimental results, obtaining fair agreement between experiments and simulations. From the fitting procedure, a band of defects is identified, located in the first 1.7 nm from the Si/HfO_2 interface at an energy level E_t = 1.59 eV below the HfO_2 conduction band edge with density N_t = 1.36 × 10"1"9 cm"−"3. A simplified analytical version of the model is proposed in order to ease the fitting procedure for the low applied voltage case considered in this work. - Highlights: • We characterized deep electron trapping/detrapping in HfO_2 structures. • We modeled the experimental results through a tunneling-based model. • We obtained an electron trap energy level of 1.59 eV below conduction band edge. • We obtained a spatial trap distribution extending 1.7 nm within the insulator. • A simplified tunneling front model is able to reproduce the experimental results.

  16. Coating manganese oxide onto graphite electrodes by immersion for electrochemical capacitors

    International Nuclear Information System (INIS)

    Lin, C.-C.; Chen, H.-W.

    2009-01-01

    In this study, manganese oxide was coated on a graphite electrode by immersion. Durations for immersion were varied to control the amount of manganese oxide coated onto the electrode surface. Maximum capacitance of 556 mF cm -2 was obtained in 0.5 M LiCl and with better/superior conditions (immersion time = 80 min and potential scan rate = 10 mV s -1 ). In addition, cyclic voltammograms of the prepared electrode at different potential scan rates exhibited the approximately rectangular and symmetric current-potential characteristics of a capacitor. Furthermore, the chronopotentiometry (CP) charge-discharge curves of the electrode prepared at 80 min of immersion time with a constant current of 1 mA were symmetric and similar isosceles triangles, which demonstrate its high electrochemical reversibility and good stability. Finally, under scanning electron microscope (SEM), the surface of the electrode prepared at 80 min of immersion time and after 1500 cycles of potential cycling revealed that numerously three-dimensional network of macropores appeared on large spherical grains

  17. MOSFET and MOS capacitor responses to ionizing radiation

    Science.gov (United States)

    Benedetto, J. M.; Boesch, H. E., Jr.

    1984-01-01

    The ionizing radiation responses of metal oxide semiconductor (MOS) field-effect transistors (FETs) and MOS capacitors are compared. It is shown that the radiation-induced threshold voltage shift correlates closely with the shift in the MOS capacitor inversion voltage. The radiation-induced interface-state density of the MOSFETs and MOS capacitors was determined by several techniques. It is shown that the presence of 'slow' states can interfere with the interface-state measurements.

  18. Reversible post-breakdown conduction in aluminum oxide-polymer capacitors

    NARCIS (Netherlands)

    Chen, Qian; Gomes, H.L.; Rocha, P.R.F.; Leeuw, de D.M.; Meskers, S.C.J.

    2013-01-01

    Aluminum/Al2O3/polymer/metal capacitors submitted to a low-power constant current stress undergo dielectric breakdown. The post-breakdown conduction is metastable, and over time the capacitors recover their original insulating properties. The decay of the conduction with time follows a power law

  19. High-Surface-Area Nitrogen-Doped Reduced Graphene Oxide for Electric Double-Layer Capacitors.

    Science.gov (United States)

    Youn, Hee-Chang; Bak, Seong-Min; Kim, Myeong-Seong; Jaye, Cherno; Fischer, Daniel A; Lee, Chang-Wook; Yang, Xiao-Qing; Roh, Kwang Chul; Kim, Kwang-Bum

    2015-06-08

    A two-step method consisting of solid-state microwave irradiation and heat treatment under NH3 gas was used to prepare nitrogen-doped reduced graphene oxide (N-RGO) with a high specific surface area (1007 m(2)  g(-1) ), high electrical conductivity (1532 S m(-1) ), and low oxygen content (1.5 wt %) for electrical double-layer capacitor applications. The specific capacitance of N-RGO was 291 F g(-1) at a current density of 1 A g(-1) , and a capacitance of 261 F g(-1) was retained at 50 A g(-1) , which indicated a very good rate capability. N-RGO also showed excellent cycling stability and preserved 96 % of the initial specific capacitance after 100 000 cycles. Near-edge X-ray absorption fine-structure spectroscopy results provided evidenced for the recovery of π conjugation in the carbon networks with the removal of oxygenated groups and revealed chemical bonding of the nitrogen atoms in N-RGO. The good electrochemical performance of N-RGO is attributed to its high surface area, high electrical conductivity, and low oxygen content. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  20. Microscale electrostatic fractional capacitors using reduced graphene oxide percolated polymer composites

    KAUST Repository

    Elshurafa, Amro M.; Almadhoun, Mahmoud Nassar Mahmoud; Alshareef, Husam N.; Salama, Khaled N.

    2013-01-01

    be controllably tuned from −67° to −31°, respectively. The electrostatic fractional capacitors proposed herein are easy to fabricate and offer integration capability on electronic printed circuit boards.

  1. α-Fe2O3 nanotubes-reduced graphene oxide composites as synergistic electrochemical capacitor materials.

    Science.gov (United States)

    Lee, K K; Deng, S; Fan, H M; Mhaisalkar, S; Tan, H R; Tok, E S; Loh, K P; Chin, W S; Sow, C H

    2012-04-28

    We present a facile approach for the fabrication of a nanocomposite comprising α-Fe(2)O(3) nanotubes (NTs) anchored on reduced graphene oxide (rGO) for electrochemical capacitors (ECs). The hollow tubular structure of the α-Fe(2)O(3) NTs presents a high surface area for reaction, while the incorporation of rGO provides an efficient two-dimensional conductive pathway to allow fast, reversible redox reaction. As a result, the nanocomposite materials exhibit a specific capacitance which is remarkably higher (~7 times) than α-Fe(2)O(3) NTs alone. In addition, the nanocomposites show excellent cycling life and large negative potential window. These findings suggest that such nanocomposites are a promising candidate as negative electrodes in asymmetrical capacitors with neutral electrolytes. This journal is © The Royal Society of Chemistry 2012

  2. Modeling of capacitor charging dynamics in an energy harvesting system considering accurate electromechanical coupling effects

    Science.gov (United States)

    Bagheri, Shahriar; Wu, Nan; Filizadeh, Shaahin

    2018-06-01

    This paper presents an iterative numerical method that accurately models an energy harvesting system charging a capacitor with piezoelectric patches. The constitutive relations of piezoelectric materials connected with an external charging circuit with a diode bridge and capacitors lead to the electromechanical coupling effect and the difficulty of deriving accurate transient mechanical response, as well as the charging progress. The proposed model is built upon the Euler-Bernoulli beam theory and takes into account the electromechanical coupling effects as well as the dynamic process of charging an external storage capacitor. The model is validated through experimental tests on a cantilever beam coated with piezoelectric patches. Several parametric studies are performed and the functionality of the model is verified. The efficiency of power harvesting system can be predicted and tuned considering variations in different design parameters. Such a model can be utilized to design robust and optimal energy harvesting system.

  3. Matching Properties of Femtofarad and Sub-Femtofarad MOM Capacitors

    KAUST Repository

    Omran, Hesham

    2016-04-21

    Small metal-oxide-metal (MOM) capacitors are essential to energy-efficient mixed-signal integrated circuit design. However, only few reports discuss their matching properties based on large sets of measured data. In this paper, we report matching properties of femtofarad and sub-femtofarad MOM vertical-field parallel-plate capacitors and lateral-field fringing capacitors. We study the effect of both the finger-length and finger-spacing on the mismatch of lateral-field capacitors. In addition, we compare the matching properties and the area efficiency of vertical-field and lateral-field capacitors. We use direct mismatch measurement technique, and we illustrate its feasibility using experimental measurements and Monte Carlo simulations. The test-chips are fabricated in a 0.18 \\\\mutext{m} CMOS process. A large number of test structures is characterized (4800 test structures), which improves the statistical reliability of the extracted mismatch information. Despite conventional wisdom, extensive measurements show that vertical-field and lateral-field MOM capacitors have the same matching properties when the actual capacitor area is considered. Measurements show that the mismatch depends on the capacitor area but not on the spacing; thus, for a given mismatch specification, the lateral-field MOM capacitor can have arbitrarily small capacitance by increasing the spacing between the capacitor fingers, at the expense of increased chip area.

  4. Matching Properties of Femtofarad and Sub-Femtofarad MOM Capacitors

    KAUST Repository

    Omran, Hesham; Alahmadi, Hamzah; Salama, Khaled N.

    2016-01-01

    Small metal-oxide-metal (MOM) capacitors are essential to energy-efficient mixed-signal integrated circuit design. However, only few reports discuss their matching properties based on large sets of measured data. In this paper, we report matching properties of femtofarad and sub-femtofarad MOM vertical-field parallel-plate capacitors and lateral-field fringing capacitors. We study the effect of both the finger-length and finger-spacing on the mismatch of lateral-field capacitors. In addition, we compare the matching properties and the area efficiency of vertical-field and lateral-field capacitors. We use direct mismatch measurement technique, and we illustrate its feasibility using experimental measurements and Monte Carlo simulations. The test-chips are fabricated in a 0.18 \\mutext{m} CMOS process. A large number of test structures is characterized (4800 test structures), which improves the statistical reliability of the extracted mismatch information. Despite conventional wisdom, extensive measurements show that vertical-field and lateral-field MOM capacitors have the same matching properties when the actual capacitor area is considered. Measurements show that the mismatch depends on the capacitor area but not on the spacing; thus, for a given mismatch specification, the lateral-field MOM capacitor can have arbitrarily small capacitance by increasing the spacing between the capacitor fingers, at the expense of increased chip area.

  5. Protection of MOS capacitors during anodic bonding

    Science.gov (United States)

    Schjølberg-Henriksen, K.; Plaza, J. A.; Rafí, J. M.; Esteve, J.; Campabadal, F.; Santander, J.; Jensen, G. U.; Hanneborg, A.

    2002-07-01

    We have investigated the electrical damage by anodic bonding on CMOS-quality gate oxide and methods to prevent this damage. n-type and p-type MOS capacitors were characterized by quasi-static and high-frequency CV-curves before and after anodic bonding. Capacitors that were bonded to a Pyrex wafer with 10 μm deep cavities enclosing the capacitors exhibited increased leakage current and interface trap density after bonding. Two different methods were successful in protecting the capacitors from such damage. Our first approach was to increase the cavity depth from 10 μm to 50 μm, thus reducing the electric field across the gate oxide during bonding from approximately 2 × 105 V cm-1 to 4 × 104 V cm-1. The second protection method was to coat the inside of a 10 μm deep Pyrex glass cavity with aluminium, forming a Faraday cage that removed the electric field across the cavity during anodic bonding. Both methods resulted in capacitors with decreased interface trap density and unchanged leakage current after bonding. No change in effective oxide charge or mobile ion contamination was observed on any of the capacitors in the study.

  6. Space-charge Effect on Electroresistance in Metal-Ferroelectric-Metal capacitors

    Science.gov (United States)

    Tian, Bo Bo; Liu, Yang; Chen, Liu Fang; Wang, Jian Lu; Sun, Shuo; Shen, Hong; Sun, Jing Lan; Yuan, Guo Liang; Fusil, Stéphane; Garcia, Vincent; Dkhil, Brahim; Meng, Xiang Jian; Chu, Jun Hao

    2015-12-01

    Resistive switching through electroresistance (ER) effect in metal-ferroelectric-metal (MFM) capacitors has attracted increasing interest due to its potential applications as memories and logic devices. However, the detailed electronic mechanisms resulting in large ER when polarisation switching occurs in the ferroelectric barrier are still not well understood. Here, ER effect up to 1000% at room temperature is demonstrated in C-MOS compatible MFM nanocapacitors with a 8.8 nm-thick poly(vinylidene fluoride) (PVDF) homopolymer ferroelectric, which is very promising for silicon industry integration. Most remarkably, using theory developed for metal-semiconductor rectifying contacts, we derive an analytical expression for the variation of interfacial barrier heights due to space-charge effect that can interpret the observed ER response. We extend this space-charge model, related to the release of trapped charges by defects, to MFM structures made of ferroelectric oxides. This space-charge model provides a simple and straightforward tool to understand recent unusual reports. Finally, this work suggests that defect-engineering could be an original and efficient route for tuning the space-charge effect and thus the ER performances in future electronic devices.

  7. Effects of Processing Temperatures of Nickel Plating on Capacitance Density of Alumina Film Capacitor.

    Science.gov (United States)

    Jeong, Myung-Sun; Ju, Byeong-Kwon; Lee, Jeon-Kook

    2015-06-01

    We observed the effects of nickel plating temperatures for controlling the surface morphologies of the deposited nickel layers on the alumina nano-pores. The alumina nano-channels were filled with nickel at various processing temperatures of 60-90 degrees C. The electrical properties of the alumina film capacitors were changed with processing temperatures. The electroless nickel plating (ENP) at 60 degrees C improved the nickel penetration into the alumina nano-channels due to the reduced reaction rate. Nickel layers are uniformly formed on the high aspect ratio alumina pores. Due to the uniform nickel electrode, the capacitance density of the alumina film capacitors is improved by the low leakage current, dissipation factor and equivalent series resistance. Alumina film capacitors made by ENP at 60 degrees C had a high capacitance density of 160 nF/cm2.

  8. Structural and electrical characteristics of high-k/metal gate metal oxide semiconductor capacitors fabricated on flexible, semi-transparent silicon (100) fabric

    KAUST Repository

    Rojas, Jhonathan Prieto

    2013-02-12

    In pursuit of flexible computers with high performance devices, we demonstrate a generic process to fabricate 10 000 metal-oxide-semiconductor capacitors (MOSCAPs) with semiconductor industry\\'s most advanced high-k/metal gate stacks on widely used, inexpensive bulk silicon (100) wafers and then using a combination of iso-/anisotropic etching to release the top portion of the silicon with the already fabricated devices as a mechanically flexible (bending curvature of 133 m−1), optically semi-transparent silicon fabric (1.5 cm × 3 cm × 25 μm). The electrical characteristics show 3.7 nm effective oxide thickness, −0.2 V flat band voltage, and no hysteresis from the fabricated MOSCAPs.

  9. Structural and electrical characteristics of high-k/metal gate metal oxide semiconductor capacitors fabricated on flexible, semi-transparent silicon (100) fabric

    KAUST Repository

    Rojas, Jhonathan Prieto; Hussain, Muhammad Mustafa; Sevilla, Galo T.

    2013-01-01

    In pursuit of flexible computers with high performance devices, we demonstrate a generic process to fabricate 10 000 metal-oxide-semiconductor capacitors (MOSCAPs) with semiconductor industry's most advanced high-k/metal gate stacks on widely used, inexpensive bulk silicon (100) wafers and then using a combination of iso-/anisotropic etching to release the top portion of the silicon with the already fabricated devices as a mechanically flexible (bending curvature of 133 m−1), optically semi-transparent silicon fabric (1.5 cm × 3 cm × 25 μm). The electrical characteristics show 3.7 nm effective oxide thickness, −0.2 V flat band voltage, and no hysteresis from the fabricated MOSCAPs.

  10. Interface Trap Profiles in 4H- and 6H-SiC MOS Capacitors with Nitrogen- and Phosphorus-Doped Gate Oxides

    Science.gov (United States)

    Jiao, C.; Ahyi, A. C.; Dhar, S.; Morisette, D.; Myers-Ward, R.

    2017-04-01

    We report results on the interface trap density ( D it) of 4H- and 6H-SiC metal-oxide-semiconductor (MOS) capacitors with different interface chemistries. In addition to pure dry oxidation, we studied interfaces formed by annealing thermal oxides in NO or POCl3. The D it profiles, determined by the C- ψ s method, show that, although the as-oxidized 4H-SiC/SiO2 interface has a much higher D it profile than 6H-SiC/SiO2, after postoxidation annealing (POA), both polytypes maintain comparable D it near the conduction band edge for the gate oxides incorporated with nitrogen or phosphorus. Unlike most conventional C- V- or G- ω-based methods, the C- ψ s method is not limited by the maximum probe frequency, therefore taking into account the "fast traps" detected in previous work on 4H-SiC. The results indicate that such fast traps exist near the band edge of 6H-SiC also. For both polytypes, we show that the total interface trap density ( N it) integrated from the C- ψ s method is several times that obtained from the high-low method. The results suggest that the detected fast traps have a detrimental effect on electron transport in metal-oxide-semiconductor field-effect transistor (MOSFET) channels.

  11. Interfacial and electrical properties of HfAlO/GaSb metal-oxide-semiconductor capacitors with sulfur passivation

    International Nuclear Information System (INIS)

    Tan Zhen; Zhao Lian-Feng; Wang Jing; Xu Jun

    2014-01-01

    Interfacial and electrical properties of HfAlO/GaSb metal-oxide-semiconductor capacitors (MOSCAPs) with sulfur passivation were investigated and the chemical mechanisms of the sulfur passivation process were carefully studied. It was shown that the sulfur passivation treatment could reduce the interface trap density D it of the HfAlO/GaSb interface by 35% and reduce the equivalent oxide thickness (EOT) from 8 nm to 4 nm. The improved properties are due to the removal of the native oxide layer, as was proven by x-ray photoelectron spectroscopy measurements and high-resolution cross-sectional transmission electron microscopy (HRXTEM) results. It was also found that GaSb-based MOSCAPs with HfAlO gate dielectrics have interfacial properties superior to those using HfO 2 or Al 2 O 3 dielectric layers. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  12. Investigation about decoupling capacitors of PMT voltage divider effects on neutron-gamma discrimination

    International Nuclear Information System (INIS)

    Divani, Nazila; Firoozabadi, Mohammad M.; Bayat, Esmail

    2014-01-01

    Scintillators are almost used in any nuclear laboratory. These detectors combine of scintillation materials, PMT and a voltage divider. Voltage dividers are different in resistive ladder design. But the effect of decoupling capacitors and damping resistors haven’t discussed yet. In this paper at first a good equilibrium circuit designed for PMT, and it was used for investigating about capacitors and resistors in much manner. Results show that decoupling capacitors have great effect on PMT output pulses. In this research, it was tried to investigate the effect of Capacitor’s value and places on PMT voltage divider in Neutron-Gamma discrimination capability. Therefore, the voltage divider circuit for R329-02 Hamamatsu PMT was made and Zero Cross method used for neutron-gamma discrimination. The neutron source was a 20Ci Am-Be. Anode and Dynode pulses and discrimination spectrum were saved. The results showed that the pulse height and discrimination quality change with the value and setting of capacitors

  13. Effect of Preconditioning and Soldering on Failures of Chip Tantalum Capacitors

    Science.gov (United States)

    Teverovsky, Alexander A.

    2014-01-01

    Soldering of molded case tantalum capacitors can result in damage to Ta205 dielectric and first turn-on failures due to thermo-mechanical stresses caused by CTE mismatch between materials used in the capacitors. It is also known that presence of moisture might cause damage to plastic cases due to the pop-corning effect. However, there are only scarce literature data on the effect of moisture content on the probability of post-soldering electrical failures. In this work, that is based on a case history, different groups of similar types of CWR tantalum capacitors from two lots were prepared for soldering by bake, moisture saturation, and longterm storage at room conditions. Results of the testing showed that both factors: initial quality of the lot, and preconditioning affect the probability of failures. Baking before soldering was shown to be effective to prevent failures even in lots susceptible to pop-corning damage. Mechanism of failures is discussed and recommendations for pre-soldering bake are suggested based on analysis of moisture characteristics of materials used in the capacitors' design.

  14. Effect of interfacial layers on dielectric properties in very thin SrBi2Ta2O9 capacitors

    International Nuclear Information System (INIS)

    Moon, Bum-Ki; Isobe, Chiharu; Hironaka, Katsuyuki; Hishikawa, Shinichi

    2001-01-01

    The effect of interfacial layers on the dielectric properties in very thin SrBi 2 Ta 2 O 9 (SBT) capacitors has been investigated using static measurements. Total permittivity (ε t ) decreased as the film thickness was reduced in both Pt/SBT/Pt and Ir/SBT/Pt capacitors. The contribution of the interfacial capacitance (C int ) and bulk capacitance to the total capacitance indicates that C int of the Ir/SBT/Pt structure was lower than that of the Pt/SBT/Pt structure, while the bulk permittivity (ε b ) was essentially the same. The dispersion of all capacitors followed the power law, while the Ir/SBT/Pt capacitor showed a larger dispersion of C int . These results suggest that the Pt/SBT/Pt capacitor is preferred for obtaining the high performance with less effect of the interfacial layers on the dielectric properties. [copyright] 2001 American Institute of Physics

  15. Effects of electrodes on the properties of sol-gel PZT based capacitors in FeRAM

    Science.gov (United States)

    Zhang, Ming-Ming; Jia, Ze; Ren, Tian-Ling

    2009-05-01

    The effects of electrodes on the properties of capacitors applied in ferroelectric random access memories (FeRAM) are investigated in this work. Pt and Ir are used as bottom and top electrodes (BE and TE), respectively, in sol-gel Pb(Zr xTi 1-x)O 3 (PZT) based capacitors. Bottom electrodes are found to play a dominant role in the properties of PZT films and capacitors. Capacitors using Pt as bottom electrode have larger remnant polarization (2Pr) than those using Ir which may result from the different orientations of PZT films. The higher Schottky barrier, more dense film and smaller roughness are believed to be the reasons for the better leakage performance of capacitors using Pt as bottom electrodes. Different vacancies types and interface conditions are believed to be the main reasons for the better fatigue (less than 10% initial 2Pr loss after 10 11 fatigue cycles) and better imprint properties of TE/PZT/Ir capacitors. Top electrodes are found to have smaller impact on the properties of capacitors compared with bottom electrodes. A decrease in 2Pr is found when Ir is used as top electrode instead of Pt for PZT/Pt, which is believed to be caused by the stress resulting from lattice mismatch. The different thermal processes that top and bottom electrodes suffered are believed to be the reason for the different impacts they have on capacitors.

  16. Evaluation of gamma and neutron irradiation effects on the properties of mica film capacitors

    International Nuclear Information System (INIS)

    Roy, Rajesh; Pandya, Arun

    2005-01-01

    We present an investigation of gamma and neutron radiation effects on mica film capacitors from an electrical point of view. We have studied quantitatively the effects of gamma and neutron irradiation on mica film capacitors of thickness, 20 and 40 μm (0.7874 and 1.5748 mil) with two different areas, 01 and 04 cm 2 . The capacitance has been measured at room temperature in the frequency range 100 Hz-10 MHz. Negligible change in the capacitance due to high gamma dose of 60 Co, 15 kGy at dose rate 0.25 kGy/h, has been observed. However, appreciable change in the capacitance has been observed due to low doses of fast neutrons (cumulative dose, 115 cGy) with flux ∼ 9.925 X 10 7 neutrons/cm 2 h from 252 Cf neutron source of fluence, 2.5 x 10 7 neutrons/s. We have also observed that the impact of gamma and neutron irradiation is more at frequencies higher than 10 kHz, These results show that the mica capacitors do not show any radiation response below 10 kHz. The study shows the radiation response of mica film capacitors to gamma and fast neutron radiations. Mica capacitors show low gamma radiation response in comparison to fast neutron radiation, because a total dose of kGy order has been given by gamma source and only few cGy dose has been given by fast neutron source. (author)

  17. Superparamagnetic magnetite nanocrystals-graphene oxide nanocomposites: facile synthesis and their enhanced electric double-layer capacitor performance.

    Science.gov (United States)

    Wang, Qihua; Wang, Dewei; Li, Yuqi; Wang, Tingmei

    2012-06-01

    Superparamagnetic magnetite nanocrystals-graphene oxide (FGO) nanocomposites were successfully synthesized through a simple yet versatile one-step solution-processed approach at ambient conditions. Magnetite (Fe3O4) nanocrystals (NCs) with a size of 10-50 nm were uniformly deposited on the surfaces of graphene oxide (GO) sheets, which were confirmed by transmission electron microscopy (TEM) and high-angle annular dark field scanning transmission election microscopy (HAADF-STEM) studies. FGO with different Fe3O4 loadings could be controlled by simply manipulating the initial weight ratio of the precursors. The M-H measurements suggested that the as-prepared FGO nanocomposites have a large saturation magnetizations that made them can move regularly under an external magnetic field. Significantly, FGO nanocomposites also exhibit enhanced electric double-layer capacitor (EDLC) activity compared with pure Fe3O4 NCs and GO in terms of specific capacitance and high-rate charge-discharge.

  18. Microscale electrostatic fractional capacitors using reduced graphene oxide percolated polymer composites

    KAUST Repository

    Elshurafa, Amro M.

    2013-06-14

    We show that graphene-percolated polymer composites exhibit fractional capacitance response in the frequency range of 50 kHz–2 MHz. In addition, it is shown that by varying the loading of graphene within the matrix from 2.5% to 12%, the phase can be controllably tuned from −67° to −31°, respectively. The electrostatic fractional capacitors proposed herein are easy to fabricate and offer integration capability on electronic printed circuit boards.

  19. Boron cross-linked graphene oxide/polyvinyl alcohol nanocomposite gel electrolyte for flexible solid-state electric double layer capacitor with high performance

    International Nuclear Information System (INIS)

    Huang, Yi-Fu; Wu, Peng-Fei; Zhang, Ming-Qiu; Ruan, Wen-Hong; Giannelis, Emmanuel P.

    2014-01-01

    Highlights: • Gel electrolyte is prepared and used in electric double layer capacitor. • Insertion of boron crosslinks into GO agglomerates opens channels for ion migration. • Solid supercapacitors show excellent specific capacitance and cycle stability. • Nanocomposite electrolyte shows better thermal stability and mechanical properties. - Abstract: A new family of boron cross-linked graphene oxide/polyvinyl alcohol (GO-B-PVA) nanocomposite gels is prepared by freeze-thaw/boron cross-linking method. Then the gel electrolytes saturated with KOH solution are assembled into electric double layer capacitors (EDLCs). Structure, thermal and mechanical properties of GO-B-PVA are explored. The electrochemical properties of EDLCs using GO-B-PVA/KOH are investigated, and compared with those using GO-PVA/KOH gel or KOH solution electrolyte. FTIR shows that boron cross-links are introduced into GO-PVA, while the boronic structure inserted into agglomerated GO sheets is demonstrated by DMA analysis. The synergy effect of the GO and the boron crosslinking benefits for ionic conductivity due to unblocking ion channels, and for improvement of thermal stability and mechanical properties of the electrolytes. Higher specific capacitance and better cycle stability of EDLCs are obtained by using the GO-B-PVA/KOH electrolyte, especially the one at higher GO content. The nanocomposite gel electrolytes with excellent electrochemical properties and solid-like character are candidates for the industrial application in high-performance flexible solid-state EDLCs

  20. Enhanced biennial variability in the Pacific due to Atlantic capacitor effect.

    Science.gov (United States)

    Wang, Lei; Yu, Jin-Yi; Paek, Houk

    2017-03-20

    The El Niño-Southern Oscillation (ENSO) and the variability in the Pacific subtropical highs (PSHs) have major impacts on social and ecological systems. Here we present an Atlantic capacitor effect mechanism to suggest that the Atlantic is a key pacemaker of the biennial variability in the Pacific including that in ENSO and the PSHs during recent decades. The 'charging' (that is, ENSO imprinting the North Tropical Atlantic (NTA) sea surface temperature (SST) via an atmospheric bridge mechanism) and 'discharging' (that is, the NTA SST triggering the following ENSO via a subtropical teleconnection mechanism) processes alternate, generating the biennial rhythmic changes in the Pacific. Since the early 1990s, a warmer Atlantic due to the positive phase of Atlantic multidecadal oscillation and global warming trend has provided more favourable background state for the Atlantic capacitor effect, giving rise to enhanced biennial variability in the Pacific that may increase the occurrence frequency of severe natural hazard events.

  1. Side-gate modulation effects on high-quality BN-Graphene-BN nanoribbon capacitors

    International Nuclear Information System (INIS)

    Wang, Yang; Chen, Xiaolong; Ye, Weiguang; Wu, Zefei; Han, Yu; Han, Tianyi; He, Yuheng; Cai, Yuan; Wang, Ning

    2014-01-01

    High-quality BN-Graphene-BN nanoribbon capacitors with double side-gates of graphene have been experimentally realized. The double side-gates can effectively modulate the electronic properties of graphene nanoribbon capacitors. By applying anti-symmetric side-gate voltages, we observed significant upward shifting and flattening of the V-shaped capacitance curve near the charge neutrality point. Symmetric side-gate voltages, however, only resulted in tilted upward shifting along the opposite direction of applied gate voltages. These modulation effects followed the behavior of graphene nanoribbons predicted theoretically for metallic side-gate modulation. The negative quantum capacitance phenomenon predicted by numerical simulations for graphene nanoribbons modulated by graphene side-gates was not observed, possibly due to the weakened interactions between the graphene nanoribbon and side-gate electrodes caused by the Ga + beam etching process

  2. Electrical analysis of high dielectric constant insulator and metal gate metal oxide semiconductor capacitors on flexible bulk mono-crystalline silicon

    KAUST Repository

    Ghoneim, Mohamed T.; Rojas, Jhonathan Prieto; Young, Chadwin D.; Bersuker, Gennadi; Hussain, Muhammad Mustafa

    2015-01-01

    We report on the electrical study of high dielectric constant insulator and metal gate metal oxide semiconductor capacitors (MOSCAPs) on a flexible ultra-thin (25 μm) silicon fabric which is peeled off using a CMOS compatible process from a standard

  3. Plasma-assisted atomic layer deposition of TiN/Al2O3 stacks for metal-oxide-semiconductor capacitor applications

    NARCIS (Netherlands)

    Hoogeland, D.; Jinesh, K.B.; Roozeboom, F.; Besling, W.F.A.; Sanden, van de M.C.M.; Kessels, W.M.M.

    2009-01-01

    By employing plasma-assisted atomic layer deposition, thin films of Al2O3 and TiN are subsequently deposited in a single reactor at a single substrate temperature with the objective of fabricating high-quality TiN/Al2O3 / p-Si metal-oxide-semiconductor capacitors. Transmission electron microscopy

  4. A combined theoretical and experimental approach of a new ternary metal oxide in molybdate composite for hybrid energy storage capacitors

    Science.gov (United States)

    Minakshi, M.; Watcharatharapong, T.; Chakraborty, S.; Ahuja, R.

    2018-04-01

    Sustainable energy sources require an efficient energy storage system possessing excellent electrochemical properties. The better understanding of possible crystal configurations and the development of a new ternary metal oxide in molybdate composite as an electrode for hybrid capacitors can lead to an efficient energy storage system. Here, we reported a new ternary metal oxide in molybdate composite [(Mn1/3Co1/3Ni1/3)MoO4] prepared by simple combustion synthesis with an extended voltage window (1.8 V vs. Carbon) resulting in excellent specific capacity 35 C g-1 (58 F g-1) and energy density (50 Wh kg-1 at 500 W kg-1) for a two electrode system in an aqueous NaOH electrolyte. The binding energies measured for Mn, Co, and Ni 2p are consistent with the literature, and with the metal ions being present as M(II), implying that the oxidation states of the transition metals are unchanged. The experimental findings are correlated well through density functional theory based electronic structure calculations. Our reported work on the ternary metal oxide studies (Mn1/3Co1/3Ni1/3)MoO4 suggests that will be an added value to the materials for energy storage.

  5. Nanohybrid capacitor: the next generation electrochemical capacitors

    Energy Technology Data Exchange (ETDEWEB)

    Naoi, K. [Institute of Symbiotic Science and Technology, Tokyo University of Agriculture and Technology, 2-24-16 Naka-cho, Koganei, Tokyo 184-8558 (Japan)

    2010-10-15

    Conventional electric double layer capacitors (EDLC) designed with two symmetrical activated carbon electrodes can deliver substantially more power than similar size Li-ion batteries. There is presently a major effort to increase the energy density of EDLC s up to a target value in the vicinity of 20-30 Wh kg{sup -1}.The present review article deals with the recent contributions to get this high energy density and new approaches that have been made to increase the withstanding voltage of the EDLCs. Important alternative approach to meet this goal that is under serious investigation is to develop an asymmetric (hybrid) capacitors. Hybrid capacitor systems are the promising approach to meet the goal to effectively increase the energy density. The investigation is to develop hybrid capacitors has been initiated by Li-ion capacitors. And, now Nanohybrid capacitor certainly achieves as high energy density as Li-ion capacitors with higher stability, higher safety and higher productivity. This is the new lithium-ion based hybrid capacitor using the lithium titanate (Li{sub 4}Ti{sub 5}O{sub 12}) negative intercalation electrode that can operate at unusually high current densities. The high-rate Li{sub 4}Ti{sub 5}O{sub 12} negative electrode has a unique nano-structure consisting of unusually small nano-crystalline Li{sub 4}Ti{sub 5}O{sub 12} nucleated and grafted onto carbon nano-fiber anchors (nc-Li{sub 4}Ti{sub 5}O{sub 12}/CNF). (Abstract Copyright [2010], Wiley Periodicals, Inc.)

  6. Effect of nuclear radiation on the electrical properties of chemical double layer capacitors

    International Nuclear Information System (INIS)

    Laghari, J.R.; Hammoud, A.N.

    1990-01-01

    The effects of nuclear radiation on the electrical properties of chemical double layer capacitors are determined. The capacitors were irradiated in a 2-MW nuclear reactor to different fluence levels. The exposure rate was 2.2 x 10 10 n/cm 2 · s of thermal neutrons, 9.52 x 10 8 n/cm 2 · s of fast neutrons (> 2 MeV), and 1.47 x 10 6 rad/h of gamma radiation. The properties measured during and after irradiation included the capacitance, equivalent series resistance, and open-circuit voltage. The post-irradiation effect on the leakage current was also determined. It was found that while the capacitance increased during irradiation, the equivalent series resistance and the open-circuit voltage decreased slightly during irradiation. Changes in these properties were not permanent s was evident from post-irradiation measurements. The leakage current did not show any significant change with radiation. The results indicate that chemical double layer capacitors can be suitably used as backup power source in electronic equipment operating in a radiation environment with total fluences up to 4.05 x 10 14 n/cm 2

  7. Degradation Effect on Reliability Evaluation of Aluminum Electrolytic Capacitor in Backup Power Converter

    DEFF Research Database (Denmark)

    Zhou, Dao; Wang, Huai; Blaabjerg, Frede

    2017-01-01

    DC capacitors in power electronic converters are a major constraint on improvement of power density as well as reliability. In this paper, according to the degradation data of electrolytic capacitors through the accelerated test, the time-to-failure of the capacitor cell is acquired and it can...... be further extended to lower stress levels. Then, in a case study of a fuel cell backup power application, the mission profile based lifetime expectancy of the individual capacitor and the capacitor bank is estimated in terms of the standby mode and operation mode. The lifetime prediction of the capacitor...

  8. Field-effect piezoresistors for vibration detection of nanobeams by using monolithically integrated MOS capacitors

    International Nuclear Information System (INIS)

    Cheng, Haitao; Yang, Heng; Li, XinXin; Wang, Yuelin

    2013-01-01

    A novel piezoresistive sensing method is presented herein for the detection of nanobeam resonator based on a monolithically integrated MOS (metal–oxide–semiconductor) capacitor structure. The bottom layer of the nanobeam located beneath the MOS capacitor is utilized as a piezoresistor for the detection of internal stress resulting from nanobeam deformation, and therefore the challenging process of ultra-shallow junction doping is avoided. When a bias voltage applied on the MOS gate exceeds the threshold, the depletion layer width is built up to the maximum, and the piezoresistive cancellation effect beside the neutral plane is eliminated. Based on a conventional microelectromechanical (MEMS) process, an MOS capacitor is fabricated at the terminal of a double-clamped nanobeam with dimensions of 46 µm × 7 µm × 149 nm. The measured R–V curve of this MOS structure presents a 64.7 nm thick piezoresistor which closely agrees with the design. This double-clamped nanobeam is excited into mechanical resonance by mounting it on a piezoelectric ceramic, and the amplitude–frequency response is measured by a network analyzer. The measured resonant frequency is 3.97 MHz and the quality (Q)-factor is 82 in atmosphere environment. Besides, this piezoresistive sensing method is verified by a laser-Doppler vibrometry. (paper)

  9. Manganese oxide electrochemical capacitor with potassium poly(acrylate) hydrogel electrolyte

    Science.gov (United States)

    Lee, Kuang-Tsin; Wu, Nae-Lih

    An aqueous gel electrolyte has for the first time been successfully applied to the MnO 2· nH 2O-based pseudocapacitive electrochemical capacitors (ECs). The gel electrolyte is made of potassium poly(acrylate) (PAAK) polymer and aqueous solution of KCl. With the selected composition, PAAK:KCl:H 2O = 9.0%:6.7%:84.3% by weight, the gel shows no fluidity, possessing an ionic conductivity in the order of 10 -1 S cm -1. The gel electrolyte has been found to give substantially higher specific capacitances than those in the liquid electrolyte with the same salt (KCl) composition (1 M) and high power capability (>10 kW/kg).

  10. Manganese oxide electrochemical capacitor with potassium poly(acrylate) hydrogel electrolyte

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Kuang-Tsin; Wu, Nae-Lih [Department of Chemical Engineering, National Taiwan University, Taipei 106 (China)

    2008-04-15

    An aqueous gel electrolyte has for the first time been successfully applied to the MnO{sub 2}.nH{sub 2}O-based pseudocapacitive electrochemical capacitors (ECs). The gel electrolyte is made of potassium poly(acrylate) (PAAK) polymer and aqueous solution of KCl. With the selected composition, PAAK:KCl:H{sub 2}O = 9.0%:6.7%:84.3% by weight, the gel shows no fluidity, possessing an ionic conductivity in the order of 10{sup -1} S cm{sup -1}. The gel electrolyte has been found to give substantially higher specific capacitances than those in the liquid electrolyte with the same salt (KCl) composition (1 M) and high power capability (>10 kW/kg). (author)

  11. Materials for electrochemical capacitors

    Science.gov (United States)

    Simon, Patrice; Gogotsi, Yury

    2008-11-01

    Electrochemical capacitors, also called supercapacitors, store energy using either ion adsorption (electrochemical double layer capacitors) or fast surface redox reactions (pseudo-capacitors). They can complement or replace batteries in electrical energy storage and harvesting applications, when high power delivery or uptake is needed. A notable improvement in performance has been achieved through recent advances in understanding charge storage mechanisms and the development of advanced nanostructured materials. The discovery that ion desolvation occurs in pores smaller than the solvated ions has led to higher capacitance for electrochemical double layer capacitors using carbon electrodes with subnanometre pores, and opened the door to designing high-energy density devices using a variety of electrolytes. Combination of pseudo-capacitive nanomaterials, including oxides, nitrides and polymers, with the latest generation of nanostructured lithium electrodes has brought the energy density of electrochemical capacitors closer to that of batteries. The use of carbon nanotubes has further advanced micro-electrochemical capacitors, enabling flexible and adaptable devices to be made. Mathematical modelling and simulation will be the key to success in designing tomorrow's high-energy and high-power devices.

  12. Vented Capacitor

    Science.gov (United States)

    Brubaker, Michael Allen; Hosking, Terry Alan

    2006-04-11

    A technique of increasing the corona inception voltage (CIV), and thereby increasing the operating voltage, of film/foil capacitors is described. Intentional venting of the capacitor encapsulation improves the corona inception voltage by allowing internal voids to equilibrate with the ambient environment.

  13. Metal-oxide-semiconductor capacitors and Schottky diodes studied with scanning microwave microscopy at 18 GHz

    Energy Technology Data Exchange (ETDEWEB)

    Kasper, M. [Christian Doppler Laboratory for Nanoscale Methods in Biophysics, Johannes Kepler University of Linz, Gruberstrasse 40, 4020 Linz (Austria); Gramse, G. [Biophysics Institute, Johannes Kepler University of Linz, Gruberstrasse 40, 4020 Linz (Austria); Hoffmann, J. [METAS, National Metrology Institute of Switzerland, Lindenweg 50, 3003 Bern-Wabern (Switzerland); Gaquiere, C. [MC2 technologies, 5 rue du Colibri, 59650 Villeneuve D' ascq (France); Feger, R.; Stelzer, A. [Institute for Communications Engineering and RF-Systems, Johannes Kepler University, Altenberger Str. 69, 4040 Linz (Austria); Smoliner, J. [Vienna University of Technology, Institute for Solid State Electronics, Floragasse 7, 1040 Vienna (Austria); Kienberger, F., E-mail: ferry-kienberger@keysight.com [Keysight Technologies Austria, Measurement Research Lab, Gruberstrasse 40, 4020 Linz (Austria)

    2014-11-14

    We measured the DC and RF impedance characteristics of micrometric metal-oxide-semiconductor (MOS) capacitors and Schottky diodes using scanning microwave microscopy (SMM). The SMM consisting of an atomic force microscopy (AFM) interfaced with a vector network analyser (VNA) was used to measure the reflection S11 coefficient of the metallic MOS and Schottky contact pads at 18 GHz as a function of the tip bias voltage. By controlling the SMM biasing conditions, the AFM tip was used to bias the Schottky contacts between reverse and forward mode. In reverse bias direction, the Schottky contacts showed mostly a change in the imaginary part of the admittance while in forward bias direction the change was mostly in the real part of the admittance. Reference MOS capacitors which are next to the Schottky diodes on the same sample were used to calibrate the SMM S11 data and convert it into capacitance values. Calibrated capacitance between 1–10 fF and 1/C{sup 2} spectroscopy curves were acquired on the different Schottky diodes as a function of the DC bias voltage following a linear behavior. Additionally, measurements were done directly with the AFM-tip in contact with the silicon substrate forming a nanoscale Schottky contact. Similar capacitance-voltage curves were obtained but with smaller values (30–300 aF) due to the corresponding smaller AFM-tip diameter. Calibrated capacitance images of both the MOS and Schottky contacts were acquired with nanoscale resolution at different tip-bias voltages.

  14. The TDDB Characteristics of Ultra-Thin Gate Oxide MOS Capacitors under Constant Voltage Stress and Substrate Hot-Carrier Injection

    Directory of Open Access Journals (Sweden)

    Jingyu Shen

    2018-01-01

    Full Text Available The breakdown characteristics of ultra-thin gate oxide MOS capacitors fabricated in 65 nm CMOS technology under constant voltage stress and substrate hot-carrier injection are investigated. Compared to normal thick gate oxide, the degradation mechanism of time-dependent dielectric breakdown (TDDB of ultra-thin gate oxide is found to be different. It is found that the gate current (Ig of ultra-thin gate oxide MOS capacitor is more likely to be induced not only by Fowler-Nordheim (F-N tunneling electrons, but also by electrons surmounting barrier and penetrating electrons in the condition of constant voltage stress. Moreover it is shown that the time to breakdown (tbd under substrate hot-carrier injection is far less than that under constant voltage stress when the failure criterion is defined as a hard breakdown according to the experimental results. The TDDB mechanism of ultra-thin gate oxide will be detailed. The differences in TDDB characteristics of MOS capacitors induced by constant voltage stress and substrate hot-carrier injection will be also discussed.

  15. Liquid Phase Plasma Synthesis of Iron Oxide/Carbon Composite as Dielectric Material for Capacitor

    Directory of Open Access Journals (Sweden)

    Heon Lee

    2014-01-01

    Full Text Available Iron oxide/carbon composite was synthesized using a liquid phase plasma process to be used as the electrode of supercapacitor. Spherical iron oxide nanoparticles with the size of 5~10 nm were dispersed uniformly on carbon powder surface. The specific capacitance of the composite increased with increasing quantity of iron oxide precipitate on the carbon powder up to a certain quantity. When the quantity of the iron oxide precipitate exceeds the threshold, however, the specific capacitance was rather reduced by the addition of precipitate. The iron oxide/carbon composite containing an optimum quantity (0.33 atomic % of iron oxide precipitate exhibited the smallest resistance and the largest initial resistance slope.

  16. Fabrication of birnessite-type layered manganese oxide films for super capacitors

    Energy Technology Data Exchange (ETDEWEB)

    Zhou, Y.K.; Dorval-Douville, G.; Favier, F. [Montpellier-2 Univ., LAMMI, UMR CNRS 5072, 34 (France)

    2004-07-01

    Birnessite-type layered manganese oxide films were anodically deposited at the surface of an inexpensive stainless steel. MnSO{sub 4} plating solutions were used at various potentials and for various durations. X-ray diffraction and scanning electron microscopy were used to examine the material structure and surface morphologies of obtained manganese oxide films. The capacitive characteristics and stability of these oxides were systematically investigated by means of cyclic voltammetry method in aqueous electrolytes. Deposition conditions affected the oxides structure and morphologies, and consequently greatly affected their electrochemical capacitance performance. (authors)

  17. Reliability-oriented Design of a Cost-effective Active Capacitor

    DEFF Research Database (Denmark)

    Wang, Haoran; Wang, Huai

    2017-01-01

    This paper presents the reliability-oriented design of a two-terminal active capacitor proposed recently. The two-terminal active capacitor has the same level of convenience as a passive capacitor with reduced requirement of overall energy storage. In order to fully explore the potential...... of the proposed concept, a comprehensive design procedure is necessary to optimally sizing the key components of the active capacitor in terms of cost and reliability. Moreover, the inherent condition monitoring capability of the active capacitor is discussed by utilizing the existing feedback signals. A 500 W...

  18. Reduction of operational amplifiers finite gain effects in switched-capacitor biquads

    Directory of Open Access Journals (Sweden)

    Radev Nikolay

    2005-01-01

    Full Text Available A combined approach for reducing the errors in the pole frequency f p, the pole Q - factor Qp and the magnitude at the pole frequency Hp, of switched capacitor biquads is presented. First, the conventional integrators in the biquads are replaced with gain-and offset-compensated integrators. Next, the errors Δ ƒp / ƒp, Δ Qp / Qp and Δ Hp / Hp are minimized by modifying three capacitances: two feedback capacitances and feed forward capacitance. The effectiveness of this approach is demonstrated by designing a band pass biquad.

  19. Electrodeposition of Manganese-Nickel Oxide Films on a Graphite Sheet for Electrochemical Capacitor Applications

    Directory of Open Access Journals (Sweden)

    Hae-Min Lee

    2014-01-01

    Full Text Available Manganese-nickel (Mn-Ni oxide films were electrodeposited on a graphite sheet in a bath consisting of manganese acetate and nickel chloride, and the structural, morphological, and electrochemical properties of these films were investigated. The electrodeposited Mn-Ni oxide films had porous structures covered with nanofibers. The X-ray diffractometer pattern revealed the presence of separate manganese oxide (g-MnO2 and nickel oxide (NiO in the films. The electrodeposited Mn-Ni oxide electrode exhibited a specific capacitance of 424 F/g in Na2SO4 electrolyte. This electrode maintained 86% of its initial specific capacitance over 2000 cycles of the charge-discharge operation, showing good cycling stability.

  20. Dispersive dielectric and conductive effects in 2D resistor-capacitor networks.

    Science.gov (United States)

    Hamou, R F; Macdonald, J R; Tuncer, E

    2009-01-14

    How to predict and better understand the effective properties of disordered material mixtures has been a long-standing problem in different research fields, especially in condensed matter physics. In order to address this subject and achieve a better understanding of the frequency-dependent properties of these systems, a large 2D L × L square structure of resistors and capacitors was used to calculate the immittance response of a network formed by random filling of binary conductor/insulator phases with 1000 Ω resistors and 10 nF capacitors. The effects of percolating clusters on the immittance response were studied statistically through the generation of 10 000 different random network samples at the percolation threshold. The scattering of the imaginary part of the immittance near the dc limit shows a clear separation between the responses of percolating and non-percolating samples, with the gap between their distributions dependent on both network size and applied frequency. These results could be used to monitor connectivity in composite materials. The effects of the content and structure of the percolating path on the nature of the observed dispersion were investigated, with special attention paid to the geometrical fractal concept of the backbone and its influence on the behavior of relaxation-time distributions. For three different resistor-capacitor proportions, the appropriateness of many fitting models was investigated for modeling and analyzing individual resistor-capacitor network dispersed frequency responses using complex-nonlinear-least-squares fitting. Several remarkable new features were identified, including a useful duality relationship and the need for composite fitting models rather than either a simple power law or a single Davidson-Cole one. Good fits of data for fully percolating random networks required two dispersive fitting models in parallel or series, with a cutoff at short times of the distribution of relaxation times of one of

  1. Effects of wet-ROA on shallow interface traps of n-type 4H-SiC MOS capacitors

    International Nuclear Information System (INIS)

    Zhu Qiaozhi; Wang Dejun

    2014-01-01

    The effects of wet re-oxidation annealing (wet-ROA) on the shallow interface traps of n-type 4H-SiC metal—oxide—semiconductor (MOS) capacitors were investigated by Gray—Brown method and angle-dependent X-ray photoelectron spectroscopy technique. The results present the energy distribution of the density of interface traps (D it ) from 0 to 0.2 eV below SiC conduction band edge (E C ) of the sample with wet-ROA for the first time, and indicate that wet-ROA could reduce the D it in this energy range by more than 60%. The reduction in D it is attributed to the reaction between the introduced oxygen and the SiO x C y species, which results in C release and SiO x C y transformation into higher oxidation states, thus reducing the SiO x C y content and the SiO x C y interface transition region thickness. (semiconductor devices)

  2. Low dielectric constant-based organic field-effect transistors and metal-insulator-semiconductor capacitors

    Science.gov (United States)

    Ukah, Ndubuisi Benjamin

    This thesis describes a study of PFB and pentacene-based organic field-effect transistors (OFET) and metal-insulator-semiconductor (MIS) capacitors with low dielectric constant (k) poly(methyl methacrylate) (PMMA), poly(4-vinyl phenol) (PVP) and cross-linked PVP (c-PVP) gate dielectrics. A physical method -- matrix assisted pulsed laser evaporation (MAPLE) -- of fabricating all-polymer field-effect transistors and MIS capacitors that circumvents inherent polymer dissolution and solvent-selectivity problems, is demonstrated. Pentacene-based OFETs incorporating PMMA and PVP gate dielectrics usually have high operating voltages related to the thickness of the dielectric layer. Reduced PMMA layer thickness (≤ 70 nm) was obtained by dissolving the PMMA in propylene carbonate (PC). The resulting pentacene-based transistors exhibited very low operating voltage (below -3 V), minimal hysteresis in their transfer characteristics, and decent electrical performance. Also low voltage (within -2 V) operation using thin (≤ 80 nm) low-k and hydrophilic PVP and c-PVP dielectric layers obtained via dissolution in high dipole moment and high-k solvents -- PC and dimethyl sulfoxide (DMSO), is demonstrated to be a robust means of achieving improved electrical characteristics and high operational stability in OFETs incorporating PVP and c-PVP dielectrics.

  3. Electrochemical Properties of Graphene-vanadium Oxide Composite Prepared by Electro-deposition for Electrochemical Capacitors

    International Nuclear Information System (INIS)

    Jeong, Heeyoung; Jeong, Sang Mun

    2015-01-01

    The nanostructural graphene/vanadium oxide (graphene/V 2 O 5 ) composite with enhanced capacitance was synthesized by the electro-deposition in 0.5 M VOSO 4 solution. The morphology of composites was characterized using scanning electron microscopy (SEM), x-ray diffraction pattern (XRD), and x-ray photoelectron spectroscopy (XPS). The oxidation states of the electro-deposited vanadium oxide was found to be V 5+ and V 4+ . The morphology of the prepared graphene/V 2 O 5 composite exhibits a netlike nano-structure with V 2 O 5 nanorods in about 100 nm diameter, which could lead a better contact between electrolyte an electrode. The composite with a deposition time of 4,000 s exhibits the specific capacitance of 854 mF/cm 2 at a scan rate of 20 mV/s and the capacitance retention of 53% after 1000 CV cycles

  4. Electrical effects in superfluid helium. I. thermoelectric effect in Einstein's capacitor

    International Nuclear Information System (INIS)

    Ledenyov, D.O.; Ledenyov, V.O.; Ledenyov, O.P.

    2014-01-01

    The Einstein's ideas about the thermodynamical fluctuational nature of some electrical phenomena and the difference of electrical potentials U in a capacitor at temperature T were proposed in 1906-1907. On base of these ideas we explain the experimental results, which were recently observed under the action of the second sound standing wave in the electrical capacitors which take placed in the superfluid Sup>4He and in the torsional mechanical resonator. The Einstein's approach, based on the interrelation of thermal, mechanical and electrical fluctuations, allows to obtain the quantitative results, coinciding with the experimental data for the correlations of the alternate low temperatures difference in second sound wave and alternate electric potentials difference between the capacitor plates in superfluid helium at as well as in the rotating mechanical oscillator

  5. Nanostructured Electrode Materials for Electrochemical Capacitor Applications.

    Science.gov (United States)

    Choi, Hojin; Yoon, Hyeonseok

    2015-06-02

    The advent of novel organic and inorganic nanomaterials in recent years, particularly nanostructured carbons, conducting polymers, and metal oxides, has enabled the fabrication of various energy devices with enhanced performance. In this paper, we review in detail different nanomaterials used in the fabrication of electrochemical capacitor electrodes and also give a brief overview of electric double-layer capacitors, pseudocapacitors, and hybrid capacitors. From a materials point of view, the latest trends in electrochemical capacitor research are also discussed through extensive analysis of the literature and by highlighting notable research examples (published mostly since 2013). Finally, a perspective on next-generation capacitor technology is also given, including the challenges that lie ahead.

  6. Redox Deposition of Nanoscale Metal Oxides on Carbon for Next-Generation Electrochemical Capacitors

    Science.gov (United States)

    2013-01-01

    conductive carbon supports. Many pro- tocols, including electrodeposition ,17 vapor deposi- tion,18 impregnation/decomposition,19 and solgel chemistry20 have...can be mitigated by dispersing the oxide on high-surface-area carbons (via solgel, impregnation, CVD, or electrodeposition methods), a strategy that...et al. Christopher Chervin is a staff scientist at the NRL, where his research focuses on redesigning cathodes for metalair batteries and exploring

  7. Effect of Carbon Coating on Li4TiO12 of Anode Material for Hybrid Capacitor.

    Science.gov (United States)

    Lee, Jong-Kyu; Lee, Byung-Gwan; Yoon, Jung-Rag

    2015-11-01

    The carbon-coated Li4Ti5O12 of anode material for hybrid capacitor was prepared by controlling carbonization time at 700 degrees C in nitrogen. With increasing of carbonization time, the discharge capacity and capacitance were decreased, while the equivalent series resistance was not changed remarkably. The rate capability and cycle performance of carbon-coated Li4Ti5O12 were larger than that of Li4Ti5O12. Carbon coating improved conductivity as well as Li-ion diffusion, and thus also resulted in good rate capabilities and cycle stability. The effects of carbon coating on the gas generation of hybrid capacitor were also discussed.

  8. Boron cross-linked graphene oxide/polyvinyl alcohol nanocomposite gel electrolyte for flexible solid-state electric double layer capacitor with high performance

    KAUST Repository

    Huang, Yi-Fu; Wu, Peng-Fei; Zhang, Ming-Qiu; Ruan, Wen-Hong; Giannelis, Emmanuel P.

    2014-01-01

    A new family of boron cross-linked graphene oxide/polyvinyl alcohol (GO-B-PVA) nanocomposite gels is prepared by freeze-thaw/boron cross-linking method. Then the gel electrolytes saturated with KOH solution are assembled into electric double layer capacitors (EDLCs). Structure, thermal and mechanical properties of GO-B-PVA are explored. The electrochemical properties of EDLCs using GO-B-PVA/KOH are investigated, and compared with those using GO-PVA/KOH gel or KOH solution electrolyte. FTIR shows that boron cross-links are introduced into GO-PVA, while the boronic structure inserted into agglomerated GO sheets is demonstrated by DMA analysis. The synergy effect of the GO and the boron crosslinking benefits for ionic conductivity due to unblocking ion channels, and for improvement of thermal stability and mechanical properties of the electrolytes. Higher specific capacitance and better cycle stability of EDLCs are obtained by using the GO-B-PVA/KOH electrolyte, especially the one at higher GO content. The nanocomposite gel electrolytes with excellent electrochemical properties and solid-like character are candidates for the industrial application in high-performance flexible solid-state EDLCs. © 2014 Elsevier Ltd.

  9. Poly(vinylidene fluoride)/NH2-Treated Graphene Nanodot/Reduced Graphene Oxide Nanocomposites with Enhanced Dielectric Performance for Ultrahigh Energy Density Capacitor.

    Science.gov (United States)

    Cho, Sunghun; Lee, Jun Seop; Jang, Jyongsik

    2015-05-13

    This work describes a ternary nanocomposite system, composed of poly(vinylidene fluoride) (PVDF), NH2-treated graphene nanodots (GNDs), and reduced graphene oxides (RGOs), for use in high energy density capacitor. When the RGO sheets were added to PVDF matrix, the β-phase content of PVDF became higher than that of the pristine PVDF. The surface-treatment of GNDs with an ethylenediamine can promote the hydrogen bonding interactions between the GNDs and PVDF, which promote the formation of β-phase PVDF. This finding could be extended to combine the advantages of both RGO and NH2-treated GND for developing an effective and reliable means of preparing PVDF/NH2-treated GND/RGO nanocomposite. Relatively small amounts of NH2-treated GND/RGO cofillers (10 vol %) could make a great impact on the α → β phase transformation, dielectric, and ferroelectric properties of the ternary nanocomposite. The resulting PVDF/NH2-treated GND/RGO nanocomposite exhibited higher dielectric constant (ε' ≈ 60.6) and larger energy density (U(e) ≈ 14.1 J cm(-3)) compared with the pristine PVDF (ε' ≈ 11.6 and U(e) ≈ 1.8 J cm(-3)).

  10. Influence of Concentration and Electrodeposition Time on the Electrochemical Super capacitor Performance of Poly(3,4-Ethylenedioxy thiophene)/Graphene Oxide Hybrid Material

    International Nuclear Information System (INIS)

    Azman, N. H. N.; Lim, H. N.; Sulaiman, Y.; Lim, H. N.; Sulaiman, Y.

    2016-01-01

    Poly(3,4-ethylenedioxy thiophene)/graphene oxide (PEDOT/GO) composites with wrinkled paper-like sheets morphology were electro polymerized potentiostatically at 1.2 V with different electrodeposition times (1-30 min) and various concentrations of GO (0.5, 1.0, 1.5, and 2.0 mg/ml). The electrochemical properties of PEDOT/GO composites as an electrode material for super capacitor were investigated using cyclic voltammetry, electrochemical impedance spectroscopy (EIS), and galvanostatic charge-discharge (GCD). The CV results revealed that PEDOT/GO containing 1.0 mg/ml GO and electro polymerized for 10 minutes exhibited the highest specific capacitance (157.17 F/g). This optimum PEDOT/GO was found to have energy and power density of 18.24 W/kg and 496.64 Wh/kg, respectively, at 1.0 A/g current density. The resistance of charge transfer obtained for PEDOT/GO is very low (13.10 Ω) compared to PEDOT (638.98Ω), proving that PEDOT/GO has a good super capacitive performance due to the synergistic effect of the high conductivity of PEDOT and large surface area of GO

  11. An Approach to Solid-State Electrical Double Layer Capacitors Fabricated with Graphene Oxide-Doped, Ionic Liquid-Based Solid Copolymer Electrolytes.

    Science.gov (United States)

    Fattah, N F A; Ng, H M; Mahipal, Y K; Numan, Arshid; Ramesh, S; Ramesh, K

    2016-06-06

    Solid polymer electrolyte (SPE) composed of semi-crystalline poly (vinylidene fluoride-hexafluoropropylene) [P(VdF-HFP)] copolymer, 1-ethyl-3-methylimidazolium bis (trifluoromethyl sulphonyl) imide [EMI-BTI] and graphene oxide (GO) was prepared and its performance evaluated. The effects of GO nano-filler were investigated in terms of enhancement in ionic conductivity along with the electrochemical properties of its electrical double layer capacitors (EDLC). The GO-doped SPE shows improvement in ionic conductivity compared to the P(VdF-HFP)-[EMI-BTI] SPE system due to the existence of the abundant oxygen-containing functional group in GO that assists in the improvement of the ion mobility in the polymer matrix. The complexation of the materials in the SPE is confirmed in X-ray diffraction (XRD) and thermogravimetric analysis (TGA) studies. The electrochemical performance of EDLC fabricated with GO-doped SPE is examined using cyclic voltammetry and charge-discharge techniques. The maximum specific capacitance obtained is 29.6 F∙g -1 , which is observed at a scan rate of 3 mV/s in 6 wt % GO-doped, SPE-based EDLC. It also has excellent cyclic retention as it is able keep the performance of the EDLC at 94% even after 3000 cycles. These results suggest GO doped SPE plays a significant role in energy storage application.

  12. Boron cross-linked graphene oxide/polyvinyl alcohol nanocomposite gel electrolyte for flexible solid-state electric double layer capacitor with high performance

    KAUST Repository

    Huang, Yi-Fu

    2014-06-01

    A new family of boron cross-linked graphene oxide/polyvinyl alcohol (GO-B-PVA) nanocomposite gels is prepared by freeze-thaw/boron cross-linking method. Then the gel electrolytes saturated with KOH solution are assembled into electric double layer capacitors (EDLCs). Structure, thermal and mechanical properties of GO-B-PVA are explored. The electrochemical properties of EDLCs using GO-B-PVA/KOH are investigated, and compared with those using GO-PVA/KOH gel or KOH solution electrolyte. FTIR shows that boron cross-links are introduced into GO-PVA, while the boronic structure inserted into agglomerated GO sheets is demonstrated by DMA analysis. The synergy effect of the GO and the boron crosslinking benefits for ionic conductivity due to unblocking ion channels, and for improvement of thermal stability and mechanical properties of the electrolytes. Higher specific capacitance and better cycle stability of EDLCs are obtained by using the GO-B-PVA/KOH electrolyte, especially the one at higher GO content. The nanocomposite gel electrolytes with excellent electrochemical properties and solid-like character are candidates for the industrial application in high-performance flexible solid-state EDLCs. © 2014 Elsevier Ltd.

  13. An Approach to Solid-State Electrical Double Layer Capacitors Fabricated with Graphene Oxide-Doped, Ionic Liquid-Based Solid Copolymer Electrolytes

    Directory of Open Access Journals (Sweden)

    N. F. A. Fattah

    2016-06-01

    Full Text Available Solid polymer electrolyte (SPE composed of semi-crystalline poly (vinylidene fluoride-hexafluoropropylene [P(VdF-HFP] copolymer, 1-ethyl-3-methylimidazolium bis (trifluoromethyl sulphonyl imide [EMI-BTI] and graphene oxide (GO was prepared and its performance evaluated. The effects of GO nano-filler were investigated in terms of enhancement in ionic conductivity along with the electrochemical properties of its electrical double layer capacitors (EDLC. The GO-doped SPE shows improvement in ionic conductivity compared to the P(VdF-HFP-[EMI-BTI] SPE system due to the existence of the abundant oxygen-containing functional group in GO that assists in the improvement of the ion mobility in the polymer matrix. The complexation of the materials in the SPE is confirmed in X-ray diffraction (XRD and thermogravimetric analysis (TGA studies. The electrochemical performance of EDLC fabricated with GO-doped SPE is examined using cyclic voltammetry and charge–discharge techniques. The maximum specific capacitance obtained is 29.6 F∙g−1, which is observed at a scan rate of 3 mV/s in 6 wt % GO-doped, SPE-based EDLC. It also has excellent cyclic retention as it is able keep the performance of the EDLC at 94% even after 3000 cycles. These results suggest GO doped SPE plays a significant role in energy storage application.

  14. Surface-modified reduced graphene oxide electrodes for capacitors by ionic liquids and their electrochemical properties

    International Nuclear Information System (INIS)

    Kim, Jieun; Kim, Seok

    2014-01-01

    Highlights: • Reduced graphene oxide surface was modified by introduction of ionic liquids. • Microstructure and capacitance of modified electrode were dependent on the ionic liquids contents. • Modification gives electrode better charge transport and higher specific capacitance. • Modified electrode showed the better capacitive performance such as rate capability and cycle stability. - Abstract: In this work, reduced graphene oxide (rGO)/ionic liquids (IL) composites with different weight ratios of IL to rGO were synthesized by a simple method. In these composites, IL contributed to the exfoliation of rGO sheets and to the improvement of the electrochemical properties of the resulting composites by enhancing the ion diffusion and charge transport. The structure of the composites was examined by transmission electron microscopy (TEM), Fourier transform infrared spectroscopy (FT-IR), X-ray photoelectron spectroscopy (XPS), and Raman spectroscopy. The TEM images showed that IL was coated on the surface of rGO in a translucent manner. The electrochemical analysis of the prepared composites was carried out by performing cyclic voltammetry (CV), galvanostatic charge–discharge, and electrochemical impedance spectroscopy (EIS). Among the prepared composites, the one with a weight ratio of rGO to IL of 1:7 showed the highest specific capacitance of 147.5 F g −1 at a scan rate of 10 mV s −1 . In addition, the rate capability and cycle performance of the composites were enhanced compared to pristine rGO. These enhanced properties make the composites suitable as electrode materials for the better performance supercapacitors

  15. Switchable capacitor

    NARCIS (Netherlands)

    Rottenberg, Xavier; Jansen, Henricus V.; Tilmans, H.A.C.; Tilmans, Hendrikus; De Raedt, Walter

    2011-01-01

    A micro electromechanical switchable capacitor is disclosed, comprising a substrate, a bottom elecrode, a dielaectric layer deposited on at least part of sai bottum electrode, a conductive floating electrode deposited on at least part of said dielectric layer, an armature positioned proximate to the

  16. Switchable capacitor

    NARCIS (Netherlands)

    Rottenberg, X.; Jansen, Henricus V.; Tilmans, H.A.C.; De Raedt, W.

    2003-01-01

    A micro electromechanical switchable capacitor is disclosed, comprising a substrate, a bottom elecrode, a dielaectric layer deposited on at least part of sai bottum electrode, a conductive floating electrode deposited on at least part of said dielectric layer, an armature positioned proximate to the

  17. Rotary capacitor

    CERN Multimedia

    CERN PhotoLab

    1971-01-01

    The rotating wheel of the rotary capacitor representing the most critical part of the new radio-frequency system of the synchro-cyclotron. The three rows of teeth on the circumference of the wheel pass between four rows of stator blades with a minimum clearance of 1 mm at a velocity of 1700 rev/min.

  18. Graphene/vanadium oxide nanotubes composite as electrode material for electrochemical capacitors

    Energy Technology Data Exchange (ETDEWEB)

    Fu, Meimei [College of Chemistry, Xiangtan University, Xiangtan 411005 (China); College of Chemistry and Chemical Engineering, Hunan Institute of Science and Technology, Yueyang 414006 (China); Ge, Chongyong [College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082 (China); College of Chemistry and Chemical Engineering, Hunan Institute of Science and Technology, Yueyang 414006 (China); Hou, Zhaohui, E-mail: zhqh96@163.com [College of Chemistry and Chemical Engineering, Hunan Institute of Science and Technology, Yueyang 414006 (China); Cao, Jianguo [College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082 (China); College of Chemistry and Chemical Engineering, Hunan Institute of Science and Technology, Yueyang 414006 (China); He, Binhong [College of Chemistry and Chemical Engineering, Hunan Institute of Science and Technology, Yueyang 414006 (China); Zeng, Fanyan [College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082 (China); College of Chemistry and Chemical Engineering, Hunan Institute of Science and Technology, Yueyang 414006 (China); Kuang, Yafei, E-mail: yafeik@163.com [College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082 (China)

    2013-07-15

    Graphene/vanadium oxide nanotubes (VOx-NTs) composite was successfully synthesized through the hydrothermal process in which acetone as solvent and 1-hexadecylamine (HDA) as structure-directing template were used. Morphology, structure and composition of the as-obtained composite were investigated by scanning electron microscopy (SEM), X-ray diffraction (XRD), Raman spectroscopy, nitrogen isothermal adsorption/desorption and thermo gravimetric analysis (TGA). The composite with the VOx-NTs amount of 69.0 wt% can deliver a specific capacitance of 210 F/g at a current density of 1 A/g in 1 M Na{sub 2}SO{sub 4} aqueous solution, which is nearly twice as that of pristine graphene (128 F/g) or VOx-NTs (127 F/g), and exhibit a good performance rate. Compared with pure VOx-NTs, the cycle stability of the composite was also greatly improved due to the enhanced conductivity of the electrode and the structure buffer role of graphene.

  19. Graphene/vanadium oxide nanotubes composite as electrode material for electrochemical capacitors

    International Nuclear Information System (INIS)

    Fu, Meimei; Ge, Chongyong; Hou, Zhaohui; Cao, Jianguo; He, Binhong; Zeng, Fanyan; Kuang, Yafei

    2013-01-01

    Graphene/vanadium oxide nanotubes (VOx-NTs) composite was successfully synthesized through the hydrothermal process in which acetone as solvent and 1-hexadecylamine (HDA) as structure-directing template were used. Morphology, structure and composition of the as-obtained composite were investigated by scanning electron microscopy (SEM), X-ray diffraction (XRD), Raman spectroscopy, nitrogen isothermal adsorption/desorption and thermo gravimetric analysis (TGA). The composite with the VOx-NTs amount of 69.0 wt% can deliver a specific capacitance of 210 F/g at a current density of 1 A/g in 1 M Na 2 SO 4 aqueous solution, which is nearly twice as that of pristine graphene (128 F/g) or VOx-NTs (127 F/g), and exhibit a good performance rate. Compared with pure VOx-NTs, the cycle stability of the composite was also greatly improved due to the enhanced conductivity of the electrode and the structure buffer role of graphene

  20. Preparation of porous carbon spheres from 2-keto-l-gulonic acid mother liquor by oxidation and activation for electric double-layer capacitor application.

    Science.gov (United States)

    Hao, Zhi-Qiang; Cao, Jing-Pei; Zhao, Xiao-Yan; Wu, Yan; Zhu, Jun-Sheng; Dang, Ya-Li; Zhuang, Qi-Qi; Wei, Xian-Yong

    2018-03-01

    A novel strategy is proposed for the increase of specific surface area (SSA) of porous carbon sphere (PCS) by oxidation and activation. 2-keto-l-gulonic acid mother liquor (GAML) as a high-pollution waste has a relatively high value of reutilization. For its high value-added utilization, GAML is used as the precursor for preparation of PCS as carbon-based electrode materials for electric double-layer capacitor. PCS is prepared by hydrothermal carbonization, carbonization and KOH activation, and Fe(NO 3 ) 3 9H 2 O is used as an oxidizing agent during carbonization. The as-prepared PCS has excellent porosity and high SSA of 2478 m 2  g -1 . Meanwhile, the pore structure of PCS can be controlled by the adjustment of carbonization parameters (carbonization temperature and the loading of Fe(NO 3 ) 3 9H 2 O). Besides, the SSA and specific capacitance of PCS can be increased remarkably when Fe(NO 3 ) 3 9H 2 O is added in carbonization. The specific capacitance of PCS can reach 303.7 F g -1 at 40 mA g -1 . PCSs as electrode material have superior electrochemical stability. After 8000 cycles, the capacitance retention is 98.3% at 2 A g -1 . The electric double-layer capacitance of PCS is improved when CS is carbonized with Fe(NO 3 ) 3 9H 2 O, and the economic and environmental benefits are achieved by the effective recycle of GAML. Copyright © 2017 Elsevier Inc. All rights reserved.

  1. Effect of short circuited DC link capacitor of an AC–DC–AC inverter on the performance of induction motor

    Directory of Open Access Journals (Sweden)

    Hadeed Ahmed Sher

    2016-07-01

    Full Text Available Induction motors are widely used in industrial power plants due to their robustness, reliability and high performance under variable operating conditions in the electrical power system. Modern industrial progress is dependent on these ruggedly constructed induction motors. Almost every sophisticated process of the industry is based on induction motors. Most of these motors are controlled by means of inverters that change the line frequency. The change in parameters of inverter makes it possible to control the motor according to the design requirements. The reliability of inverter based motor control is an important issue for industrial applications and therefore, it becomes very vital for design engineers to have comprehensive analysis of the inverter fed induction machine. This paper investigates one of the faults that may occur on the DC link of an inverter fed induction motor. The effect of the capacitor short circuit is presented in this paper. It also deals with the effects of short circuited capacitor on freewheeling diode. DC link capacitors are well designed and even the probability of capacitor failure is high, it is always a rare case if they puncture, however this analysis will add to the reliability of the induction machine under variable operating condition.

  2. Capacitance characteristics of metal-oxide-semiconductor capacitors with a single layer of embedded nickel nanoparticles for the application of nonvolatile memory

    International Nuclear Information System (INIS)

    Wei, Li; Ling, Xu; Wei-Ming, Zhao; Hong-Lin, Ding; Zhong-Yuan, Ma; Jun, Xu; Kun-Ji, Chen

    2010-01-01

    This paper reports that metal-oxide-semiconductor (MOS) capacitors with a single layer of Ni nanoparticles were successfully fabricated by using electron-beam evaporation and rapid thermal annealing for application to nonvolatile memory. Experimental scanning electron microscopy images showed that Ni nanoparticles of about 5 nm in diameter were clearly embedded in the SiO 2 layer on p-type Si (100). Capacitance–voltage measurements of the MOS capacitor show large flat-band voltage shifts of 1.8 V, which indicate the presence of charge storage in the nickel nanoparticles. In addition, the charge-retention characteristics of MOS capacitors with Ni nanoparticles were investigated by using capacitance–time measurements. The results showed that there was a decay of the capacitance embedded with Ni nanoparticles for an electron charge after 10 4 s. But only a slight decay of the capacitance originating from hole charging was observed. The present results indicate that this technique is promising for the efficient formation or insertion of metal nanoparticles inside MOS structures. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  3. Batch fabrication of mesoporous boron-doped nickel oxide nanoflowers for electrochemical capacitors

    International Nuclear Information System (INIS)

    Yang, Jing-He; Yu, Qingtao; Li, Yamin; Mao, Liqun; Ma, Ding

    2014-01-01

    Highlights: • A new facile liquid-phase method has been employed for synthesis boron-doped NiO nanoflowers. • The specific surface area of NiO is as high as 200 m 2 g −1 . • NiO nanoflowers exhibit a high specific capacitance of ∼1309 F g −1 at a charge and discharge current density of 3 A g −1 . • NiO nanoflowers have excellent cycling ability and even after 2500 cycles there is no significant reduction in specific capacitance. - Abstract: Boron-doped nickel oxide (B-NiO) nanoflowers are prepared by simple thermal decomposition of nickel hydroxide. B-NiO is porous sphere with a diameter of about 400 nm. B-NiO nanoflowers are composed of approximately 30 nm nanoplates and the thickness of the nanosheets is approximately 3 nm. The specific surface area of the material is as high as 200 m 2 g −1 and the pore size distribution curves of B-NiO has three typical peaks in the range of mesoporous (5 nm, 13 nm and 18 nm). As an electrode for supercapacitors, the crystalline B-NiO nanoflowers have favorable characteristics, for instance, a specific capacitance of 1309 F g −1 at a current density of 3 A g −1 and no significant reduction in Coulombic efficiency after 2500 cycles at 37.5 A g −1 . This remarkable electrochemical performance will make B-NiO nanoflowers a promising electrode material for high performance supercapacitors

  4. Composite magnetorheological elastomers as dielectrics for plane capacitors: Effects of magnetic field intensity

    Directory of Open Access Journals (Sweden)

    Maria Balasoiu

    Full Text Available The fabrication of composite magnetorheological elastomers (MRECs based on silicone rubber, carbonyl iron microparticles (10% vol. and polyurethane elastomer doped with 0%, 10% and 20% volume concentration TiO2 microparticles is presented. The obtained MRECs have the shape of thin foils and are used as dielectric materials for manufacturing plane capacitors. Using the plane capacitor method and expression of capacitance as a function of magnetic field intensity, combined with linear elasticity theory, the static magnetoelastic model of the composite is obtained and analyzed. Keywords: Magnetorheological elastomer, TiO2 microparticles, Silicone rubber, Carbonyl iron, Plane capacitor, Magnetoelasticity

  5. Wet thermal annealing effect on TaN/HfO2/Ge metal—oxide—semiconductor capacitors with and without a GeO2 passivation layer

    International Nuclear Information System (INIS)

    Liu Guan-Zhou; Li Cheng; Lu Chang-Bao; Tang Rui-Fan; Tang Meng-Rao; Wu Zheng; Yang Xu; Huang Wei; Lai Hong-Kai; Chen Song-Yan

    2012-01-01

    Wet thermal annealing effects on the properties of TaN/HfO 2 /Ge metal—oxide—semiconductor (MOS) structures with and without a GeO 2 passivation layer are investigated. The physical and the electrical properties are characterized by X-ray photoemission spectroscopy, high-resolution transmission electron microscopy, capacitance—voltage (C—V) and current—voltage characteristics. It is demonstrated that wet thermal annealing at relatively higher temperature such as 550 °C can lead to Ge incorporation in HfO 2 and the partial crystallization of HfO 2 , which should be responsible for the serious degradation of the electrical characteristics of the TaN/HfO 2 /Ge MOS capacitors. However, wet thermal annealing at 400 °C can decrease the GeO x interlayer thickness at the HfO 2 /Ge interface, resulting in a significant reduction of the interface states and a smaller effective oxide thickness, along with the introduction of a positive charge in the dielectrics due to the hydrolyzable property of GeO x in the wet ambient. The pre-growth of a thin GeO 2 passivation layer can effectively suppress the interface states and improve the C—V characteristics for the as-prepared HfO 2 gated Ge MOS capacitors, but it also dissembles the benefits of wet thermal annealing to a certain extent

  6. Method of making dielectric capacitors with increased dielectric breakdown strength

    Science.gov (United States)

    Ma, Beihai; Balachandran, Uthamalingam; Liu, Shanshan

    2017-05-09

    The invention is directed to a process for making a dielectric ceramic film capacitor and the ceramic dielectric laminated capacitor formed therefrom, the dielectric ceramic film capacitors having increased dielectric breakdown strength. The invention increases breakdown strength by embedding a conductive oxide layer between electrode layers within the dielectric layer of the capacitors. The conductive oxide layer redistributes and dissipates charge, thus mitigating charge concentration and micro fractures formed within the dielectric by electric fields.

  7. Electrical analysis of high dielectric constant insulator and metal gate metal oxide semiconductor capacitors on flexible bulk mono-crystalline silicon

    KAUST Repository

    Ghoneim, Mohamed T.

    2015-06-01

    We report on the electrical study of high dielectric constant insulator and metal gate metal oxide semiconductor capacitors (MOSCAPs) on a flexible ultra-thin (25 μm) silicon fabric which is peeled off using a CMOS compatible process from a standard bulk mono-crystalline silicon substrate. A lifetime projection is extracted using statistical analysis of the ramping voltage (Vramp) breakdown and time dependent dielectric breakdown data. The obtained flexible MOSCAPs operational voltages satisfying the 10 years lifetime benchmark are compared to those of the control MOSCAPs, which are not peeled off from the silicon wafer. © 2014 IEEE.

  8. Space charge effects and aberrations on electron pulse compression in a spherical electrostatic capacitor.

    Science.gov (United States)

    Yu, Lei; Li, Haibo; Wan, Weishi; Wei, Zheng; Grzelakowski, Krzysztof P; Tromp, Rudolf M; Tang, Wen-Xin

    2017-12-01

    The effects of space charge, aberrations and relativity on temporal compression are investigated for a compact spherical electrostatic capacitor (α-SDA). By employing the three-dimensional (3D) field simulation and the 3D space charge model based on numerical General Particle Tracer and SIMION, we map the compression efficiency for a wide range of initial beam size and single-pulse electron number and determine the optimum conditions of electron pulses for the most effective compression. The results demonstrate that both space charge effects and aberrations prevent the compression of electron pulses into the sub-ps region if the electron number and the beam size are not properly optimized. Our results suggest that α-SDA is an effective compression approach for electron pulses under the optimum conditions. It may serve as a potential key component in designing future time-resolved electron sources for electron diffraction and spectroscopy experiments. Copyright © 2017 Elsevier B.V. All rights reserved.

  9. Modeling of Structure Effect for Ferroelectric Capacitor Based on Poly(vinylidene fluoride-trifluoroethylene Ultrathin Films

    Directory of Open Access Journals (Sweden)

    Long Li

    2017-12-01

    Full Text Available The characteristics of ferroelectric capacitors with poly(vinylidene fluoride-trifluoroethlene (P(VDF-TrFE films have been studied at different structures of cell electrodes. It is suggested that the effect of electrode structures could induce changes of performance. Remarkably, cells with line electrodes display a better polarization and fatigue resistance than those with flat electrodes. For P(VDF-TrFE ultrathin films with different electrode structures, the models of charge compensation mechanism for depolarization field and domain fatigue decomposition are used to explain the effect of electrode structure. Furthermore, the driving voltage based on normal speed-functionality is designed, and the testing results show that the line electrode structure could induce a robust switching, which is determined by the free charges concentration in active layer. These findings provide an effective route to design the optimum structure for a ferroelectric capacitor based on P(VDF-TrFE copolymer ultrathin film.

  10. Effects of 6 MeV electron irradiation on the electrical properties and device parameters of Al/Al{sub 2}O{sub 3}/TiO{sub 2}/n-Si MOS capacitors

    Energy Technology Data Exchange (ETDEWEB)

    Laha, P.; Banerjee, I.; Barhai, P.K. [Department of Applied Physics, Birla Institute of Technology, Mesra, Ranchi 835215 (India); Das, A.K. [Laser and Plasma Technology Division, Bhabha Atomic Research Center, Mumbai 400085 (India); Bhoraskar, V.N. [Department of Physics, University of Pune, Ganeshkhind, Pune 411007 (India); Mahapatra, S.K., E-mail: skm@physics.ucla.edu [Department of Applied Physics, Birla Institute of Technology, Mesra, Ranchi 835215 (India)

    2012-07-15

    Highlights: Black-Right-Pointing-Pointer The electron irradiation effects make variation in the device parameters. Black-Right-Pointing-Pointer The device parameters changes due to percentage of defects and charge trapping. Black-Right-Pointing-Pointer Leakage current of Al/Al{sub 2}O{sub 3}/TiO{sub 2}/n-Si changes due to interface dangling bonds. Black-Right-Pointing-Pointer The leakage current mechanism of MOS structures is due to Poole-Frenkel effect. - Abstract: The effects of 6 MeV electron irradiation on the electrical properties and device parameter characteristics of Al/Al{sub 2}O{sub 3}/TiO{sub 2}/n-Si metal-oxide-semiconductor capacitors have been studied. Twelve Al/Al{sub 2}O{sub 3}/TiO{sub 2}/n-Si MOS capacitors were fabricated using r.f. magnetron sputtering and divided into four groups. The first group was not irradiated and treated as virgin. The rest were irradiated with 6 MeV electrons at doses 10, 20, and 30 kGy, maintaining the dose rate at {approx}1 kGy/min. Variations in crystallinity of the virgin and irradiated capacitors were studied using grazing incident X-ray diffraction. The thickness and in-depth elemental distributions of individual layers were determined using secondary ion mass apectrometry. Capacitance-voltage, conductance-voltage and leakage current-voltage characteristics of the virgin and irradiated samples were studied. The device parameters (flat band voltage, surface charge density and interface trap density of the virgin and irradiated structures) were determined. The electrical properties of the capacitors were investigated and the Poole-Frenkel coefficient of the capacitors was determined from leakage current measurements. The leakage current mechanism has been explained.

  11. The Effects of Self-Discharge on the Performance of Symmetric Electric Double-Layer Capacitors and Active Electrolyte-Enhanced Supercapacitors: Insights from Modeling and Simulation

    Science.gov (United States)

    Ike, Innocent S.; Sigalas, Iakovos; Iyuke, Sunny E.

    2017-02-01

    The effects of self-discharge on the performance of symmetric electric double-layer capacitors (EDLCs) and active electrolyte-enhanced supercapacitors were examined by incorporating self-discharge into electrochemical capacitor models during charging and discharging. The sources of self-discharge in capacitors were side reactions or redox reactions and several impurities and electric double-layer (EDL) instability. The effects of self-discharge during capacitor storage was negligible since it took a fully charged capacitor a minimum of 14.0 days to be entirely discharged by self-discharge in all conditions studied, hence self-discharge in storage condition can be ignored. The first and second charge-discharge cycle energy efficiencies η_{{{{E}}1}} and η_{{{{E}}2}} of a capacitor of electrode effective conductivity α1 = 0.05 S/cm with only EDL instability self-discharge with current density J_{{VR}} = 1.25 × 10-3 A/cm2 were 72.33% and 72.34%, respectively. Also, energy efficiencies η_{{{{E}}1}} and η_{{{{E}}2}} of a similar capacitor with both side reactions and redox reactions and EDL instability self-discharges with current densities J_{{VR}} = 0.00125 A/cm2 and J_{{{{VR}}1}} = 0.0032 A/cm2 were 38.13% and 38.14% respectively, compared with 84.24% and 84.25% in a similar capacitor without self-discharge. A capacitor with only EDL instability self-discharge and that with both side reactions and redox reactions and EDL instability self-discharge lost 9.73 Wh and 28.38 Wh of energy, respectively, through self-discharge during charging and discharging. Hence, EDLCs charging and discharging time is significantly dependent on the self-discharge rate which are too large to be ignored.

  12. Irradiation effects of 6 MeV electron on electrical properties of Al/Al2O3/n-Si MOS capacitors

    International Nuclear Information System (INIS)

    Laha, P.; Banerjee, I.; Bajaj, A.; Chakraborty, P.; Barhai, P.K.; Dahiwale, S.S.; Das, A.K.; Bhoraskar, V.N.; Kim, D.; Mahapatra, S.K.

    2012-01-01

    The influence of 6 MeV electron irradiation on the electrical properties of Al/Al 2 O 3 /n-Si metal–oxide–semiconductor (MOS) capacitors has been investigated. Using rf magnetron sputtering deposition technique, Al/Al 2 O 3 /n-Si MOS capacitors were fabricated and such twelve capacitors were divided into four groups. The first group of MOS capacitors was not irradiated with 6 MeV electrons and treated as virgin. The second group, third group and fourth group of MOS capacitors were irradiated with 6 MeV electrons at 10 kGy, 20 kGy, and 30 kGy doses, respectively, keeping the dose rate ∼1 kGy/min. The variations in crystallinity of the virgin and irradiated MOS capacitors have been compared from GIXRD (Grazing Incidence X-ray Diffraction) spectra. Thickness and in-depth elemental distributions of individual layers were performed using Secondary Ion Mass Spectrometry (SIMS). The device parameters like flat band voltage (V FB ) and interface trap density (D it ) of virgin and irradiated MOS capacitors have been calculated from C vs V and G/ω vs V curve, respectively. The electrical properties of the capacitors were investigated from the tan δ vs V graph. The device parameters were estimated using C–V and G/ω–V measurements. Poole–Frenkel coefficient (β PF ) of the MOS capacitors was determined from leakage current (I)–voltage (V) measurement. The leakage current mechanism was proposed from the β PF value. - Highlights: ► The electron irradiation effects make variation in the device parameters. ► The device parameters changes due to percentage of defects and charge trapping. ► Leakage current of Al/Al 2 O 3 /n-Si changes due to interface dangling bonds. ► The leakage current mechanism of MOS structures is due to Poole-Frenkel effect.

  13. Effect of electronic spatial extents (ESE) of ions on overpotential of lithium ion capacitors

    International Nuclear Information System (INIS)

    Xu, Fan; Lee, Chung ho; Koo, Chong Min; Jung, Cheolsoo

    2014-01-01

    Highlights: •Electronic spatial extent (ESE) of ion characterizes its electron density volume. •The ESE of ion proposes to assess overpotential of nanoporous capacitor. •Anion with low ESE shows low overpotential of the capacitor. •The ESE is more realistic to assess overpotential than conductivity or ion size. -- Abstract: The electronic spatial extent (ESE) of ions was defined as a major concept for assessing the cause of overpotential in the charging and discharging processes of a nanoporous activated carbon (AC) electrode. The performance degradation of AC/Li half-cells was caused by the overpotential, which was in discord with the electrolyte conductivity and ion size. Compared to the overpotential with the salt concentration, the AC/Li half-cell with a high concentration had a smaller overpotential, and its discharge patterns were similar to the curves obtained from the half-cells with a smaller ESE of BF 4 − ion. The ESE is a more realistic solution for determining the overpotential of the nanoporous capacitor, such as supercapacitor and Li ion capacitor, because its capacity is dependent on the electron density at the electric double layer of the capacitor electrode

  14. Edge effects in vertically-oriented graphene based electric double-layer capacitors

    Science.gov (United States)

    Yang, Huachao; Yang, Jinyuan; Bo, Zheng; Zhang, Shuo; Yan, Jianhua; Cen, Kefa

    2016-08-01

    Vertically-oriented graphenes (VGs) have been demonstrated as a promising active material for electric double-layer capacitors (EDLCs), partially due to their edge-enriched structure. In this work, the 'edge effects', i.e., edges as the promoters of high capacitance, in VG based EDLCs are investigated with experimental research and numerical simulations. VGs with diverse heights (i.e., edge-to-basal ratios) and edge densities are prepared with varying the plasma-enabled growth time and employing different plasma sources. Electrochemical measurements show that the edges play a predominant role on the charge storage behavior of VGs. A simulation is further conducted to unveil the roles of the edges on the separation and adsorption of ions within VG channels. The initial charge distribution of a VG plane is obtained with density functional theory (DFT) calculations, which is subsequently applied to a molecular dynamics (MD) simulation system to gain the insights into the microscope EDLC structures. Compared with the basal planes, the edges present higher initial charge density (by 4.2 times), higher ion packing density (by 2.6 times), closer ion packing location (by 0.8 Å), and larger ion separation degree (by 14%). The as-obtained findings will be instructive in designing the morphology and structure of VGs for enhanced capacitive performances.

  15. Effects of polymer corrosion inhibitor on widening etch tunnels of aluminum foil for capacitor

    International Nuclear Information System (INIS)

    Ban, Chaolei; He, Yedong; Shao, Xin; Wang, Zhishen

    2014-01-01

    Highlights: •With PSSA, the exterior surface dissolution of etched Al foil is suppressed. •With PSSA, the interior surface dissolution of etched Al foil is facilitated. •With PSSA, the tunnels are widened along the entire length. •With PSSA, the area and capacitance of etched Al foil are significantly improved. -- Abstract: We investigated the effects of polymeric corrosion inhibitor polystyrene sulfonic acid (PSSA) additive to 3% HNO 3 solution on widening tunnels of pre-etched aluminum foil by electrochemical DC etching for aluminum electrolytic capacitors, using scanning electron microscopy and polarization curves. With trace PSSA, the dissolution of exterior surface of etch tunnels of Al foil is suppressed and the dissolution of interior surface of etch tunnels of Al foil is facilitated, respectively. The tunnels transform from circular cone to circular column in shape and pits-merging on the surface is weakened, leading to significant increase in the surface area and specific capacitance of the Al foil. The amounts of reduced thickness and weight of Al foil during the widening process of etch tunnels can be decreased if PSSA is employed

  16. The effects of dopants on the electrical resistivity in lead magnesium niobate multilayer ceramic capacitors

    International Nuclear Information System (INIS)

    Chang, D.D.; Ling, H.C.

    1989-01-01

    Electrical resistivity studies were performed on multilayer ceramic capacitors (MLC) based on lead magnesium niobate and containing dopants of lead titanate, lead zinc niobate, and lead cobalt niobate. The results showed that lead titanate and/or lead zinc niobate had no effect on the electrical resistivity while lead cobalt niobate decreased the resistivity. In samples without lead cobalt niobate, we observed a conduction mechanism with an activation energy of --1 eV, which is commonly observed in barium titanate based dielectrics. This is attributed to ionic conduction via the motion of oxygen vacancies. The increase in conductivity (or decrease in resistivity) resulting from the addition of lead cobalt niobate was rationalized as due to electronic conduction through charge hopping among the cations. This conduction mechanism was characterized by an activation energy of --0.5 eV. Since the activation energy associated with the long-term failure was previously determined by a matrix of temperature and voltage accelerated life tests to be -- 1 eV, they conclude that conduction through charge hopping is not affecting the long-term reliability of these devices

  17. Effects of the Particle Size and the Solvent in Printing Inks on the Capacitance of Printed Parallel-Plate Capacitors

    Directory of Open Access Journals (Sweden)

    Sungsik Park

    2016-02-01

    Full Text Available Parallel-plate capacitors were fabricated using a printed multi-layer structure in order to determine the effects of particle size and solvent on the capacitance. The conductive-dielectric-conductive layers were sequentially spun using commercial inks and by intermediate drying with the aid of a masking polymeric layer. Both optical and scanning electron microscopy were used to characterize the morphology of the printed layers. The measured capacitance was larger than the theoretically calculated value when ink with small-sized particles was used as the top plate. Furthermore, the use of a solvent whose polarity was similar to that of the underlying dielectric layer enhanced the penetration and resulted in an increase in capacitance. The functional resistance-capacitance low-pass filter was implemented using printed resistors and capacitors, a process that may be scalable in the future.

  18. Multilayer capacitors, method for making multilayer capacitors

    Science.gov (United States)

    Ma, Beihai; Balachandran, Uthamalingam

    2018-03-06

    The invention provides a stacked capacitor configuration comprising subunits each with a thickness of as low as 20 microns. Also provided is combination capacitor and printed wire board wherein the capacitor is encapsulated by the wire board. The invented capacitors are applicable in micro-electronic applications and high power applications, whether it is AC to DC or DC to AC, or DC to DC.

  19. Effect of ultraviolet light on fatigue of lead zirconate titanate thin-film capacitors

    Science.gov (United States)

    Lee, J.; Esayan, S.; Safari, A.; Ramesh, R.

    1994-07-01

    Fatigue of Pb(Zr0.52Ti0.48)O3 (PZT) thin-film capacitors was studied under UV light (He-Cd laser, λ=325 nm). The remanent polarization of the PZT film capacitors increased upon light illumination. Fatigue resistance was also improved under UV light. During fatigue test, the change in polarization of PZT films upon UV light illumination increased gradually with cycling. These results were examined within the framework of the polarization screening model, which is suggested as an essential process for fatigue. This leads to a conclusion that more charged defects are involved in the fatigue process through internal screening of polarization.

  20. Force on an Asymmetric Capacitor

    National Research Council Canada - National Science Library

    Bahder, Thomas

    2003-01-01

    .... At present, the physical basis for the Biefeld-Brown effect is not understood. The order of magnitude of the net force on the asymmetric capacitor is estimated assuming two different mechanisms of charge conduction between its electrodes...

  1. Ferroelectric Fractional-Order Capacitors

    KAUST Repository

    Agambayev, Agamyrat

    2017-07-25

    Poly(vinylidene fluoride)-based polymers and their blends are used to fabricate electrostatic fractional-order capacitors. This simple but effective method allows us to precisely tune the constant phase angle of the resulting fractional-order capacitor by changing the blend composition. Additionally, we have derived an empirical relation between the ratio of the blend constituents and the constant phase angle to facilitate the design of a fractional order capacitor with a desired constant phase angle. The structural composition of the fabricated blends is investigated using Fourier transform infrared spectroscopy and X-ray diffraction techniques.

  2. Ferroelectric Fractional-Order Capacitors

    KAUST Repository

    Agambayev, Agamyrat; Patole, Shashikant P.; Farhat, Mohamed; Elwakil, Ahmed; Bagci, Hakan; Salama, Khaled N.

    2017-01-01

    Poly(vinylidene fluoride)-based polymers and their blends are used to fabricate electrostatic fractional-order capacitors. This simple but effective method allows us to precisely tune the constant phase angle of the resulting fractional-order capacitor by changing the blend composition. Additionally, we have derived an empirical relation between the ratio of the blend constituents and the constant phase angle to facilitate the design of a fractional order capacitor with a desired constant phase angle. The structural composition of the fabricated blends is investigated using Fourier transform infrared spectroscopy and X-ray diffraction techniques.

  3. Capacitor Discharge - A Capacitor Tutorial [video

    OpenAIRE

    Naval Postgraduate School Physics

    2014-01-01

    NPS Physics Physics Demonstrations Here's a capacitor discharge demonstrated by physicist Dr. Dernardo. Dr. D gives a nice capacitor lesson along with some fireworks. Charging and Discharging a Capacitor is dangerous. Do not try this at home. Dr. Bruce Denardo uses eleven 9V batteries, connected in series for a total of 99 creating a pretty large spark.

  4. In situ one-pot preparation of reduced graphene oxide/polyaniline composite for high-performance electrochemical capacitors

    International Nuclear Information System (INIS)

    Chen, Nali; Ren, Yapeng; Kong, Peipei; Tan, Lin; Feng, Huixia; Luo, Yongchun

    2017-01-01

    Highlights: • A new method to prepare reduced graphene oxide/polyaniline composite is developed. • Aniline serves as a reduction for graphene oxide under weak alkali condition. • Different characterizations confirm that GO can be effectively reduced by aniline. • A high specific capacitance of 524.4 F·g"−"1 is obtained at 0.5 A·g"−"1. - Abstract: Reduced graphene oxide/polyaniline (rGO/PANI) composites are prepared through an effective in situ one-pot synthesis route that includes the reduction of graphene oxide (GO) by aniline under weak alkali condition via hydrothermal method and then followed by in situ polymerization of aniline. X-ray diffraction, Fourier transform infrared spectroscopy, Raman spectroscopy, ultraviolet-visible spectroscopy, X-ray photoelectron spectroscopy, scanning electron microscope and transmission electron microscope are employed to reveal that GO is successfully reduced by aniline under weak alkali condition and PANI can be deposited on the surfaces of reduced graphene oxide (rGO) sheets. The effect of rGO is optimized by tuning the mass ratios of aniline to GO to improve the electrochemical performance of rGO/PANI composites. The maximum specific capacitance of rGO/PANI composites achieves 524.4 F/g with a mass ratio of aniline to GO 10:1 at a current density of 0.5 A/g, in comparison to the specific capacitance of 397 F/g at the same current density of pure PANI. Particularly, the specific capacity retention rate is 81.1% after 2000 cycles at 100 mv/s scan rate, which is an improvement over that of pure PANI (55.5%).

  5. In situ one-pot preparation of reduced graphene oxide/polyaniline composite for high-performance electrochemical capacitors

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Nali [College of Petrochemical Technology, Lanzhou University of Technology, Lanzhou 730050, Gansu (China); State Key Laboratory of Advanced Processing and Recycling of Nonferrous Metals, Lanzhou University of Technology, Lanzhou 730050, Gansu (China); Ren, Yapeng; Kong, Peipei; Tan, Lin [College of Petrochemical Technology, Lanzhou University of Technology, Lanzhou 730050, Gansu (China); Feng, Huixia, E-mail: fenghx@lut.cn [College of Petrochemical Technology, Lanzhou University of Technology, Lanzhou 730050, Gansu (China); Luo, Yongchun, E-mail: luoyc@lut.cn [State Key Laboratory of Advanced Processing and Recycling of Nonferrous Metals, Lanzhou University of Technology, Lanzhou 730050, Gansu (China)

    2017-01-15

    Highlights: • A new method to prepare reduced graphene oxide/polyaniline composite is developed. • Aniline serves as a reduction for graphene oxide under weak alkali condition. • Different characterizations confirm that GO can be effectively reduced by aniline. • A high specific capacitance of 524.4 F·g{sup −1} is obtained at 0.5 A·g{sup −1}. - Abstract: Reduced graphene oxide/polyaniline (rGO/PANI) composites are prepared through an effective in situ one-pot synthesis route that includes the reduction of graphene oxide (GO) by aniline under weak alkali condition via hydrothermal method and then followed by in situ polymerization of aniline. X-ray diffraction, Fourier transform infrared spectroscopy, Raman spectroscopy, ultraviolet-visible spectroscopy, X-ray photoelectron spectroscopy, scanning electron microscope and transmission electron microscope are employed to reveal that GO is successfully reduced by aniline under weak alkali condition and PANI can be deposited on the surfaces of reduced graphene oxide (rGO) sheets. The effect of rGO is optimized by tuning the mass ratios of aniline to GO to improve the electrochemical performance of rGO/PANI composites. The maximum specific capacitance of rGO/PANI composites achieves 524.4 F/g with a mass ratio of aniline to GO 10:1 at a current density of 0.5 A/g, in comparison to the specific capacitance of 397 F/g at the same current density of pure PANI. Particularly, the specific capacity retention rate is 81.1% after 2000 cycles at 100 mv/s scan rate, which is an improvement over that of pure PANI (55.5%).

  6. High-performance hybrid (electrostatic double-layer and faradaic capacitor-based) polymer actuators incorporating nickel oxide and vapor-grown carbon nanofibers.

    Science.gov (United States)

    Terasawa, Naohiro; Asaka, Kinji

    2014-12-02

    The electrochemical and electromechanical properties of polymeric actuators prepared using nickel peroxide hydrate (NiO2·xH2O) or nickel peroxide anhydride (NiO2)/vapor-grown carbon nanofibers (VGCF)/ionic liquid (IL) electrodes were compared with actuators prepared using solely VGCFs or single-walled carbon nanotubes (SWCNTs) and an IL. The electrode in these actuator systems is equivalent to an electrochemical capacitor (EC) exhibiting both electrostatic double-layer capacitor (EDLC)- and faradaic capacitor (FC)-like behaviors. The capacitance of the metal oxide (NiO2·xH2O or NiO2)/VGCF/IL electrode is primarily attributable to the EDLC mechanism such that, at low frequencies, the strains exhibited by the NiO2·xH2O/VGCF/IL and NiO2/VGCF/IL actuators primarily result from the FC mechanism. The VGCFs in the NiO2·xH2O/VGCF/IL and NiO2/VGCF/IL actuators strengthen the EDLC mechanism and increase the electroconductivity of the devices. The mechanism underlying the functioning of the NiO2·xH2O/VGCF/IL actuator in which NiO2·xH2O/VGCF = 1.0 was found to be different from that of the devices produced using solely VGCFs or SWCNTs, which exhibited only the EDLC mechanism. In addition, it was found that both NiO2 and VGCFs are essential with regard to producing actuators that are capable of exhibiting strain levels greater than those of SWCNT-based polymer actuators and are thus suitable for practical applications. Furthermore, the frequency dependence of the displacement responses of the NiO2·xH2O/VGCF and NiO2/VGCF polymer actuators were successfully simulated using a double-layer charging kinetic model. This model, which accounted for the oxidization and reduction reactions of the metal oxide, can also be applied to SWCNT-based actuators. The results of electromechanical response simulations for the NiO2·xH2O/VGCF and NiO2/VGCF actuators predicted the strains at low frequencies as well as the time constants of the devices, confirming that the model is applicable

  7. Capacitance-voltage characterization of fully silicided gated MOS capacitor

    International Nuclear Information System (INIS)

    Wang Baomin; Ru Guoping; Jiang Yulong; Qu Xinping; Li Bingzong; Liu Ran

    2009-01-01

    This paper investigates the capacitance-voltage (C-V) measurement on fully silicided (FUSI) gated metal-oxide-semiconductor (MOS) capacitors and the applicability of MOS capacitor models. When the oxide leakage current of an MOS capacitor is large, two-element parallel or series model cannot be used to obtain its real C-V characteristic. A three-element model simultaneously consisting of parallel conductance and series resistance or a four-element model with further consideration of a series inductance should be used. We employed the three-element and the four-element models with the help of two-frequency technique to measure the Ni FUSI gated MOS capacitors. The results indicate that the capacitance of the MOS capacitors extracted by the three-element model still shows some frequency dispersion, while that extracted by the four-element model is close to the real capacitance, showing little frequency dispersion. The obtained capacitance can be used to calculate the dielectric thickness with quantum effect correction by NCSU C-V program. We also investigated the influence of MOS capacitor's area on the measurement accuracy. The results indicate that the decrease of capacitor area can reduce the dissipation factor and improve the measurement accuracy. As a result, the frequency dispersion of the measured capacitance is significantly reduced, and real C-V characteristic can be obtained directly by the series model. In addition, this paper investigates the quasi-static C-V measurement and the photonic high-frequency C-V measurement on Ni FUSI metal gated MOS capacitor with a thin leaky oxide. The results indicate that the large tunneling current through the gate oxide significantly perturbs the accurate measurement of the displacement current, which is essential for the quasi-static C-V measurement. On the other hand, the photonic high-frequency C-V measurement can bypass the leakage problem, and get reliable low-frequency C-V characteristic, which can be used to

  8. Effects of tunnel oxide process on SONOS flash memory characteristics

    International Nuclear Information System (INIS)

    Li, Dong Hua; Park, Il Han; Yun, Jang-Gn; Park, Byung-Gook

    2010-01-01

    In this paper, various process conditions of tunnel oxides are applied in SONOS flash memory to investigate their effects on charge transport during the program/erase operations. We focus the key point of analysis on Fermi-level (E F ) variation at the interface of silicon substrate and tunnel oxide. The Si-O chemical bonding information which describes the interface oxidation states at the Si/SiO 2 is obtained by the core-level X-ray photoelectron spectroscopy (XPS). Moreover, relative E F position is determined by measuring the Si 2p energy shift from XPS spectrums. Experimental results from memory characteristic measurement show that MTO tunnel oxide structure exhibits faster erase speed, and larger memory window during P/E cycle compared to FTO and RTO tunnel oxide structures. Finally, we examine long-term charge retention characteristic and find that the memory windows of all the capacitors remain wider than 2 V after 10 5 s.

  9. Breakdown properties of irradiated MOS capacitors

    International Nuclear Information System (INIS)

    Paccagnella, A.; Candelori, A.; Pellizzer, F.; Fuochi, P.G.; Lavale, M.

    1996-01-01

    The authors have studied the effects of ionizing and non-ionizing radiation on the breakdown properties of different types of MOS capacitors, with thick (200 nm) and thin (down to 8 nm) oxides. In general, no large variations of the average breakdown field, time-to-breakdown at constant voltage, or charge-to-breakdown at constant voltage, or charge-to-breakdown values have been observed after high dose irradiation (20 Mrad(Si) 9 MeV electrons on thin and thick oxides, 17(Si) Mrad Co 60 gamma and 10 14 neutrons/cm 2 only on thick oxides). However, some modifications of the cumulative failure distributions have been observed in few of the oxides tested

  10. Efficiency Improvement of Capacitor Operation

    Directory of Open Access Journals (Sweden)

    V. P. Kashcheev

    2010-01-01

    Full Text Available A system of modernized capacitor ball-cleaning that prevents formation of depositions on internal capacitor tube surface has been developed in the paper.The system has been introduced at the Minsk TPP-4 (Power Block No.5. The paper presupposes that the economic effect will be nearly 0.43 million US dollars per year at one poer block with turbine Т-250/300-240.

  11. Investigation of embedded perovskite nanoparticles for enhanced capacitor permittivities.

    Science.gov (United States)

    Krause, Andreas; Weber, Walter M; Pohl, Darius; Rellinghaus, Bernd; Verheijen, Marcel; Mikolajick, Thomas

    2014-11-26

    Growth experiments show significant differences in the crystallization of ultrathin CaTiO3 layers on polycrystalline Pt surfaces. While the deposition of ultrathin layers below crystallization temperature inhibits the full layer crystallization, local epitaxial growth of CaTiO3 crystals on top of specific oriented Pt crystals occurs. The result is a formation of crystals embedded in an amorphous matrix. An epitaxial alignment of the cubic CaTiO3 ⟨111⟩ direction on top of the underlying Pt {111} surface has been observed. A reduced forming energy is attributed to an interplay of surface energies at the {111} interface of both materials and CaTiO3 nanocrystallites facets. The preferential texturing of CaTiO3 layers on top of Pt has been used in the preparation of ultrathin metal-insulator-metal capacitors with 5-30 nm oxide thickness. The effective CaTiO3 permittivity in the capacitor stack increases to 55 compared to capacitors with amorphous layers and a permittivity of 28. The isolated CaTiO3 crystals exhibit a passivation of the CaTiO3 grain surfaces by the surrounding amorphous matrix, which keeps the capacitor leakage current at ideally low values comparable for those of amorphous thin film capacitors.

  12. Electric charging/discharging characteristics of super capacitor, using de-alloying and anodic oxidized Ti-Ni-Si amorphous alloy ribbons.

    Science.gov (United States)

    Fukuhara, Mikio; Sugawara, Kazuyuki

    2014-01-01

    Charging/discharging behaviors of de-alloyed and anodic oxidized Ti-Ni-Si amorphous alloy ribbons were measured as a function of current between 10 pA and 100 mA, using galvanostatic charge/discharging method. In sharp contrast to conventional electric double layer capacitor (EDLC), discharging behaviors for voltage under constant currents of 1, 10 and 100 mA after 1.8 ks charging at 100 mA show parabolic decrease, demonstrating direct electric storage without solvents. The supercapacitors, devices that store electric charge on their amorphous TiO2-x surfaces that contain many 70-nm sized cavities, show the Ragone plot which locates at lower energy density region near the 2nd cells, and RC constant of 800 s (at 1 mHz), which is 157,000 times larger than that (5 ms) in EDLC.

  13. Stress effects of the inter-level dielectric layer on the ferroelectric performance of integrated SrBi2Ta2O9 capacitors

    International Nuclear Information System (INIS)

    Hong, Suk-Kyoung; Yang, B.; Oh, Sang Hyun; Kang, Young Min; Kang, Nam Soo; Hwang, Cheol Seong; Kwon, Oh Seong

    2001-01-01

    The thermal stress effects of the inter-level dielectric (ILD) layer on the ferroelectric performance of integrated Pt/SrBi 2 Ta 2 O 9 (SBT)/Pt capacitors were investigated. Two different thin film materials, pure SiO 2 grown at 650 degree C and B- and P-doped SiO 2 grown at 400 degree C by chemical vapor deposition techniques, were tested as an ILD layer. The ILD layer encapsulated the SBT capacitor array. During high temperature thermal cycling (up to 800 degree C) after ILD deposition, which is used for both densifying the ILD and curing of the various damage imposed on the SBT capacitors, a large thermal stress occurred in the bottom Pt layer due to the thermal expansion mismatch between the various layers. In particular, the pure SiO 2 ILD layer between the capacitors did not allow thermal expansion of the Pt layers, which led to a large accumulation of compressive stress in the layer. This resulted in hillock formation in the bottom Pt layer and eventual capacitor failure. However, the B- and P-doped SiO 2 ILD layer contracted during thermal cycling by removing residual impurities, which allowed greater expansion of the Pt layer. Therefore, compressive stress accumulation did not occur and excellent ferroelectric properties were thus obtained from the integrated capacitor array. [copyright] 2001 American Institute of Physics

  14. Nanostructured Electrode Materials for Electrochemical Capacitor Applications

    Directory of Open Access Journals (Sweden)

    Hojin Choi

    2015-06-01

    Full Text Available The advent of novel organic and inorganic nanomaterials in recent years, particularly nanostructured carbons, conducting polymers, and metal oxides, has enabled the fabrication of various energy devices with enhanced performance. In this paper, we review in detail different nanomaterials used in the fabrication of electrochemical capacitor electrodes and also give a brief overview of electric double-layer capacitors, pseudocapacitors, and hybrid capacitors. From a materials point of view, the latest trends in electrochemical capacitor research are also discussed through extensive analysis of the literature and by highlighting notable research examples (published mostly since 2013. Finally, a perspective on next-generation capacitor technology is also given, including the challenges that lie ahead.

  15. Evaluation of Polymer Hermetically Sealed Tantalum Capacitors

    Science.gov (United States)

    Teverovsky, Alexander A.

    2014-01-01

    Polymer cathode tantalum capacitors have lower ESR (equivalent series resistance) compared to other types of tantalum capacitors and for this reason have gained popularity in the electronics design community. Their use allows improved performance of power supply systems along with substantial reduction of size and weight of the components used. However, these parts have poor thermal stability and can degrade in humid environments. Polymer hermetically sealed (PHS) capacitors avoid problems related to environmental degradation of molded case parts and can potentially replace current wet and solid hermetically sealed capacitors. In this work, PHS capacitors manufactured per DLA LAM DWG#13030 are evaluated for space applications. Several lots of capacitors manufactured over period from 2010 to 2014 were tested for the consistency of performance, electrical and thermal characteristics, highly accelerated life testing, and robustness under reverse bias and random vibration conditions. Special attention was given to analysis of leakage currents and the effect of long-term high temperature storage on capacitors in as is condition and after hermeticity loss. The results show that PHS capacitors might be especially effective for low-temperature applications or for system requiring a cold start-up. Additional screening and qualification testing have been recommended to assure the necessary quality of capacitors for space projects.

  16. The Impact of HCl Precleaning and Sulfur Passivation on the Al2O3/Ge Interface in Ge Metal-Oxide-Semiconductor Capacitors

    International Nuclear Information System (INIS)

    Xue Bai-Qing; Chang Hu-Dong; Sun Bing; Wang Sheng-Kai; Liu Hong-Gang

    2012-01-01

    Surface treatment for Ge substrates using hydrogen chlorine cleaning and chemical passivation are investigated on AuTi/Al 2 O 3 /Ge metal-oxide-semiconductor capacitors. After hydrogen chlorine cleaning, a smooth Ge surface almost free from native oxide is demonstrated by atomic force microscopy and x-ray photoelectron spectroscopy observations. Passivation using a hydrogen chlorine solution is found to form a chlorine-terminated surface, while aqueous ammonium sulfide pretreatment results in a surface terminated by Ge-S bonding. Compared with chlorine-passivated samples, the sulfur-passivated ones show less frequency dispersion and better thermal stability based on capacitance-voltage characterizations. The samples with HCl pre-cleaning and (NH 4 ) 2 S passivation show less frequency dispersion than the HF pre-cleaning and (NH 4 ) 2 S passivated ones. The surface treatment process using hydrogen chlorine cleaning followed by aqueous ammonium sulfide passivation demonstrates a promising way to improve gate dielectric/Ge interface quality. (condensed matter: structure, mechanical and thermal properties)

  17. Atomic Layer-Deposited Molybdenum Oxide/Carbon Nanotube Hybrid Electrodes: The Influence of Crystal Structure on Lithium-Ion Capacitor Performance.

    Science.gov (United States)

    Fleischmann, Simon; Zeiger, Marco; Quade, Antje; Kruth, Angela; Presser, Volker

    2018-05-25

    Merging of supercapacitors and batteries promises the creation of electrochemical energy storage devices that combine high specific energy, power, and cycling stability. For that purpose, lithium-ion capacitors (LICs) that store energy by lithiation reactions at the negative electrode and double-layer formation at the positive electrode are currently investigated. In this study, we explore the suitability of molybdenum oxide as a negative electrode material in LICs for the first time. Molybdenum oxide-carbon nanotube hybrid materials were synthesized via atomic layer deposition, and different crystal structures and morphologies were obtained by post-deposition annealing. These model materials are first structurally characterized and electrochemically evaluated in half-cells. Benchmarking in LIC full-cells revealed the influences of crystal structure, half-cell capacity, and rate handling on the actual device level performance metrics. The energy efficiency, specific energy, and power are mainly influenced by the overpotential and kinetics of the lithiation reaction during charging. Optimized LIC cells show a maximum specific energy of about 70 W·h·kg -1 and a high specific power of 4 kW·kg -1 at 34 W·h·kg -1 . The longevity of the LIC cells is drastically increased without significantly reducing the energy by preventing a deep cell discharge, hindering the negative electrode from crossing its anodic potential limit.

  18. Polypropylene/Polyaniline Nanofiber/Reduced Graphene Oxide Nanocomposite with Enhanced Electrical, Dielectric, and Ferroelectric Properties for a High Energy Density Capacitor.

    Science.gov (United States)

    Cho, Sunghun; Kim, Minkyu; Lee, Jun Seop; Jang, Jyongsik

    2015-10-14

    This work demonstrates a ternary nanocomposite system, composed of polypropylene (PP), redoped PANI (r-PANI) nanofibers, and reduced graphene oxides (RGOs), for use in a high energy density capacitor. r-PANI nanofibers were fabricated by the combination methods of chemical oxidation polymerization and secondary doping processes, resulting in higher conductivity (σ≈156 S cm(-1)) than that of the primarily doped PANI nanofibers (σ≈16 S cm(-1)). RGO sheets with high electron mobility and thermal stability can enhance the conductivity of r-PANI/RGO (σ≈220 S cm(-1)) and thermal stability of PP matrix. These findings could be extended to combine the advantages of r-PANI nanofibers and RGO sheets for developing an efficient means of preparing PP/r-PANI/RGO nanocomposite. When the r-PANI/RGO cofillers (10 vol %) were added to PP matrix, the resulting PP/r-PANI/RGO nanocomposite exhibited high dielectric constant (ε'≈51.8) with small dielectric loss (ε″≈9.3×10(-3)). Furthermore, the PP/r-PANI/RGO nanocomposite was used for an energy-harvesting device, which demonstrated high energy density (Ue≈12.6 J cm(-3)) and breakdown strength (E≈5.86×10(3) kV cm(-1)).

  19. Effects of ion insertion on cycling performance of miniaturized electrochemical capacitor of carbon nanotubes array.

    Science.gov (United States)

    Tsai, Dah-Shyang; Chang, Chuan-hua; Chiang, Wei-Wen; Lee, Kuei-Yi; Huang, Ying-Sheng

    2014-10-24

    Capacity degradation and ion insertion of a miniaturized electrochemical capacitor are studied using ionic liquid [EMI] [TFSI] as the electrolyte. This capacitor is featured with two comb-like electrodes of vertical carbon nanotubes, ∼70 μm in height and 20 μm in interelectrode gap. We quantify the levels of ion insertion damage with Raman spectroscopy after the electrode experiences 120 consecutive voltammetric cycles to various potential limits. Distinct structural damage emerges due to [EMI] when the negative potential reaches -1.7 V, and those due to [TFSI] arise when the positive potential reaches 1.7 V vs. RHE. Judging from the peak broadenings, [EMI] is more detrimental than [TFSI]. When the voltage window ΔU is set as less than or equal to 2.8 V, both electrode potentials are within the two intercalation limits, little or no decay is observed in 10(4) charge/discharge cycles. When ΔU is 3.4 V, the positive potential exceeds the upper limit, but the negative potential stays within the lower limit, the cell capacitance decreases moderately. When ΔU increases to 3.8 V, both electrodes suffer from damages because of exceeding the intercalation limits. And the cell capacitance decreases substantially, even leading to a premature failure.

  20. Effects of annealing temperature on the characteristics of ALD-deposited HfO2 in MIM capacitors

    International Nuclear Information System (INIS)

    Jeong, S.-W.; Lee, H.J.; Kim, K.S.; You, M.T.; Roh, Y.; Noguchi, T.; Xianyu, W.; Jung, J.

    2006-01-01

    We have investigated the annealing effects of HfO 2 films deposited by an atomic layer deposition (ALD) method on the electrical and physical properties in the Si/SiO 2 /Pt/ALD-HfO 2 /Pd metal-insulator-metal (MIM) capacitors. If the annealing temperature for HfO 2 films was restricted below 500 deg. C, an annealing step using a rapid thermal processor (RTP) improves the electrical properties such as the dissipation factor and the dielectric constant. On the other hand, annealing at 700 deg. C degrades the electrical characteristics in general; the dissipation factor increases over the frequency range of 1∼4 MHz, and the leakage current increases up to 2 orders at the low electric field regions. We found that the degradation of electrical properties is due to the grain growth in the HfO 2 film (i.e., poly-crystallization of the film) by the high temperature annealing processing. We suggested that the annealing temperature must be restricted below 500 deg. C to obtain the high quality high-k film for the MIM capacitors

  1. Magnetic and magneto-dielectric properties of magneto-electric field effect capacitor using Cr2O3

    OpenAIRE

    Takeshi, Yokota; Shotaro, Murata; Takaaki, Kuribayashi; Manabu, Gomi

    2008-01-01

    We investigated the magnetic and dielectric properties of a metal (Pt)/insulator (Cr_2O_3)/magnetic floating gate (Fe)/tunnel layer (CeO_2)/semiconductor (Si) capacitor. This capacitor shows capacitance-voltage (C-V) properties typical of a Si Metal-Insulator-Semiconductor (MIS) capacitor with hysteresis, which indicates that electrons have been injected into the Fe layer. The capacitor also shows ferromagnetic properties. The C-V curve has a hysteresis window with a clockwise trace. This hys...

  2. On the stability of silicon field effect capacitors with phosphate buffered saline electrolytic gate and self assembled monolayer gate insulator

    International Nuclear Information System (INIS)

    Hemed, Nofar Mintz; Inberg, Alexandra; Shacham-Diamand, Yosi

    2013-01-01

    We herein report on the stability of Electrolyte/Insulator/Semiconductor (EIS) devices with Self-Assembled Monolayer (SAM) gate insulator layers, i.e. Electrolyte/SAM/Semiconductor (ESS) devices. ESS devices can be functionalized creating highly specific sensors that can be integrated on standard silicon platform. However, biosensors by their nature are in contact with biological solutions that contain ions and molecules that may affect the device characteristics and cause electrical instability. In this paper we present a list of potential hazards to ESS devices and a study of the device stability under common testing conditions analyzing possible causes for the instabilities. ESS capacitors under open circuit conditions (i.e. open circuit bias of ∼0.6 V vs. Ag/AgCl reference electrode) were periodically characterized. We measured the complex impedance of the capacitors versus bias and extracted the effective capacitance vs. voltage (C–V) curves using two methods. We observed a parallel shift of the C–V curves toward negative bias; showing an effective accumulation of positive charge. The quantitative analysis of the drift vs. time was found to depend on the effective capacitance evaluation method. This effect is discussed and a best-known method is proposed. The devices surface composition was tested before and after the stress experiment by X-ray Photoelectron Spectroscopy (XPS) and sodium accumulation was observed. To further explore the flat-band voltage drift effect and to challenge the assumption that alkali ions are involved in the drift we conceived a novel alkali-free phosphate buffer saline (AF-PBS) where the sodium and potassium ions are replaced by ammonium ion and tested the capacitor under similar conditions to standard PBS. We found that the drift of the AF-PBS solution was much less at the first hour but was similar to that of the conventional PBS for longer stress times; hence, AF-PBS does not solve the long-term instability problem

  3. Enhancement of the electrical characteristics of MOS capacitors by reducing the organic content of H2O-diluted Spin-On-Glass based oxides

    International Nuclear Information System (INIS)

    Molina, Joel; Munoz, Ana; Torres, Alfonso; Landa, Mauro; Alarcon, Pablo; Escobar, Manuel

    2011-01-01

    In this work, the physical, chemical and electrical properties of Metal-Oxide-Semiconductor (MOS) capacitors with Spin-On-Glass (SOG)-based thin films as gate dielectric have been investigated. Experiments of SOG diluted with two different solvents (2-propanol and deionized water) were done in order to reduce the viscosity of the SOG solution so that thinner films (down to ∼20 nm) could be obtained and their general characteristics compared. Thin films of SOG were deposited on silicon by the sol-gel technique and they were thermally annealed using conventional oxidation furnace and Rapid Thermal Processing (RTP) systems within N 2 ambient after deposition. SOG dilution using non-organic solvents like deionized water and further annealing (at relatively high temperatures ≥450 deg. C) are important processes intended to reduce the organic content of the films. Fourier-Transform Infrared (FTIR) Spectroscopy results have shown that water-diluted SOG films have a significant reduction in their organic content after increasing annealing temperature and/or dilution percentage when compared to those of undiluted SOG films. Both current-voltage (I-V) and capacitance-voltage (C-V) measurements show better electrical characteristics for SOG-films diluted in deionized water compared to those diluted in 2-propanol (which is an organic solvent). The electrical characteristics of H 2 O-diluted SOG thin films are very similar to those obtained from high quality thermal oxides so that their application as gate dielectrics in MOS devices is promising. Finally, it has been demonstrated that by reducing the organic content of SOG-based thin films, it is possible to obtain MOS devices with better electrical properties.

  4. Total-ionizing-dose effects on isolation oxides in modern CMOS technologies

    International Nuclear Information System (INIS)

    Barnaby, Hugh J.; Mclain, Michael; Esqueda, Ivan Sanchez

    2007-01-01

    This paper presents experimental data on the total dose response of deep sub-micron bulk CMOS devices and integrated circuits. Ionizing radiation experiments on shallow trench isolation (STI) field oxide MOS capacitors (FOXCAP) indicate a characteristic build-up of radiation-induced defects in the dielectric. In this paper, capacitors fabricated with STI, thermal, SIMOX and bipolar base oxides of similar thickness are compared and show the STI oxide to be most susceptible to radiation effects. Experimental data on irradiated shift registers and n-channel MOSFETs are also presented. These data indicate that radiation damage to the STI can increase the off-state current of n-channel devices and the standby current of CMOS integrated circuits

  5. Interface depolarization field as common denominator of fatigue and size effect in Pb(Zr0.54Ti0.46)O3 ferroelectric thin film capacitors

    Science.gov (United States)

    Bouregba, R.; Sama, N.; Soyer, C.; Poullain, G.; Remiens, D.

    2010-05-01

    Dielectric, hysteresis and fatigue measurements are performed on Pb(Zr0.54Ti0.46)O3 (PZT) thin film capacitors with different thicknesses and different electrode configurations, using platinum and LaNiO3 conducting oxide. The data are compared with those collected in a previous work devoted to study of size effect by R. Bouregba et al., [J. Appl. Phys. 106, 044101 (2009)]. Deterioration of the ferroelectric properties, consecutive to fatigue cycling and thickness downscaling, presents very similar characteristics and allows drawing up a direct correlation between the two phenomena. Namely, interface depolarization field (Edep) resulting from interface chemistry is found to be the common denominator, fatigue phenomena is manifestation of strengthen of Edep in the course of time. Change in dielectric permittivity, in remnant and coercive values as well as in the shape of hysteresis loops are mediated by competition between degradation of dielectric properties of the interfaces and possible accumulation of interface space charge. It is proposed that presence in the band gap of trap energy levels with large time constant due to defects in small nonferroelectric regions at the electrode—PZT film interfaces ultimately governs the aging process. Size effect and aging process may be seen as two facets of the same underlying mechanism, the only difference lies in the observation time of the phenomena.

  6. Novel Dry-Type Glucose Sensor Based on a Metal-Oxide-Semiconductor Capacitor Structure with Horseradish Peroxidase + Glucose Oxidase Catalyzing Layer

    Science.gov (United States)

    Lin, Jing-Jenn; Wu, You-Lin; Hsu, Po-Yen

    2007-10-01

    In this paper, we present a novel dry-type glucose sensor based on a metal-oxide-semiconductor capacitor (MOSC) structure using SiO2 as a gate dielectric in conjunction with a horseradish peroxidase (HRP) + glucose oxidase (GOD) catalyzing layer. The tested glucose solution was dropped directly onto the window opened on the SiO2 layer, with a coating of HRP + GOD catalyzing layer on top of the gate dielectric. From the capacitance-voltage (C-V) characteristics of the sensor, we found that the glucose solution can induce an inversion layer on the silicon surface causing a gate leakage current flowing along the SiO2 surface. The gate current changes Δ I before and after the drop of glucose solution exhibits a near-linear relationship with increasing glucose concentration. The Δ I sensitivity is about 1.76 nA cm-2 M-1, and the current is quite stable 20 min after the drop of the glucose solution is tested.

  7. Layer by Layer Ex-Situ Deposited Cobalt-Manganese Oxide as Composite Electrode Material for Electrochemical Capacitor.

    Science.gov (United States)

    Rusi; Chan, P Y; Majid, S R

    2015-01-01

    The composite metal oxide electrode films were fabricated using ex situ electrodeposition method with further heating treatment at 300°C. The obtained composite metal oxide film had a spherical structure with mass loading from 0.13 to 0.21 mg cm(-2). The structure and elements of the composite was investigated using X-ray diffraction (XRD) and energy dispersive X-ray (EDX). The electrochemical performance of different composite metal oxides was studied by cyclic voltammetry (CV) and galvanostatic charge-discharge (CD). As an active electrode material for a supercapacitor, the Co-Mn composite electrode exhibits a specific capacitance of 285 Fg(-1) at current density of 1.85 Ag(-1) in 0.5 M Na2SO4 electrolyte. The best composite electrode, Co-Mn electrode was then further studied in various electrolytes (i.e., 0.5 M KOH and 0.5 M KOH/0.04 M K3Fe(CN) 6 electrolytes). The pseudocapacitive nature of the material of Co-Mn lead to a high specific capacitance of 2.2 x 10(3) Fg(-1) and an energy density of 309 Whkg(-1) in a 0.5 M KOH/0.04 M K3Fe(CN) 6 electrolyte at a current density of 10 Ag(-1). The specific capacitance retention obtained 67% of its initial value after 750 cycles. The results indicate that the ex situ deposited composite metal oxide nanoparticles have promising potential in future practical applications.

  8. The evolutionary capacitor HSP90 buffers the regulatory effects of mammalian endogenous retroviruses.

    Science.gov (United States)

    Hummel, Barbara; Hansen, Erik C; Yoveva, Aneliya; Aprile-Garcia, Fernando; Hussong, Rebecca; Sawarkar, Ritwick

    2017-03-01

    Understanding how genotypes are linked to phenotypes is important in biomedical and evolutionary studies. The chaperone heat-shock protein 90 (HSP90) buffers genetic variation by stabilizing proteins with variant sequences, thereby uncoupling phenotypes from genotypes. Here we report an unexpected role of HSP90 in buffering cis-regulatory variation affecting gene expression. By using the tripartite-motif-containing 28 (TRIM28; also known as KAP1)-mediated epigenetic pathway, HSP90 represses the regulatory influence of endogenous retroviruses (ERVs) on neighboring genes that are critical for mouse development. Our data based on natural variations in the mouse genome show that genes respond to HSP90 inhibition in a manner dependent on their genomic location with regard to strain-specific ERV-insertion sites. The evolutionary-capacitor function of HSP90 may thus have facilitated the exaptation of ERVs as key modifiers of gene expression and morphological diversification. Our findings add a new regulatory layer through which HSP90 uncouples phenotypic outcomes from individual genotypes.

  9. Soil washing in combination with homogeneous Fenton-like oxidation for the removal of 2,4,4'-trichlorodiphenyl from soil contaminated with capacitor oil.

    Science.gov (United States)

    Ma, Xiao-Hong; Zhao, Ling; Lin, Zhi-Rong; Dong, Yuan-Hua

    2016-04-01

    Detoxification by chemical oxidation of polychlorinated biphenyls (PCBs) in contaminated soils is very difficult and inefficient because PCBs typically associate with the solid phase or exist as non-aqueous-phase liquids due to their low solubility and slow desorption rates, and thus, they are difficult to remove from soils by using traditional, water-based elution techniques. Surfactant can enhance washing efficiency of PCBs from contaminated soils. This study used Brij 58, Brij 30, Tween 80, and 2-hydroxypropyl-β-cyclodextrin (HPCD) to solubilize 2,4,4'-trichlorodiphenyl (PCB28) from soil contaminated with capacitor oil into solution. The feasibility of PCB28 oxidation in soil washing wastewater through a Fe(3+)-catalyzed Fenton-like reaction was subsequently examined. Washing with 10 g L(-1) Brij 58 solution showed the highest extraction efficiency (up to 61.5 %) compared with that of the three other surfactants. The total concentration of PCB28 in contaminated soil at 25 °C after 48-h extraction was 286 mg L(-1). In contrast to conditions in which no washing agent was added, addition of the four washing agents decreased the efficiency of PCB28 degradation by the Fenton-like reaction, with the decrease due to addition of 10 g L(-1) Brij 58 solution being the smallest. The optimal concentration of H2O2 for preventing its useless decomposition was found to be 50 mM. The efficiency of PCB28 removal was lower when the initial concentration of PCB28 treated in the Fenton-like reaction was higher. The degradation efficiencies of PCB28 at initial concentrations of 0.1, 10, and 176 mg L(-1) in 10 g L(-1) Brij 58 solution at 25 °C and pH 3.0 and 9 h of reaction using 50 mM H2O2 were 64.1, 42.0, and 34.6 %, respectively. This result indicates that soil washing combined with Fenton-like oxidation may be a practical approach for the remediation of PCB-contaminated soil.

  10. Effect of BST film thickness on the performance of tunable interdigital capacitors grown by MBE

    Science.gov (United States)

    Meyers, Cedric J. G.; Freeze, Christopher R.; Stemmer, Susanne; York, Robert A.

    2017-12-01

    Voltage-tunable, interdigital capacitors (IDCs) were fabricated on Ba0.29Sr0.71TiO3 grown by hybrid molecular beam epitaxy (MBE). In this growth technique, we utilize the metal-organic precursor titanium tetraisopropoxide rather than solid-source Ti as with conventional MBE. Two samples of varying BaxSr(1-x)TiO3 (BST) thicknesses were fabricated and analyzed. High-quality, epitaxial Pt electrodes were deposited by sputtering from a high-purity Pt target at 825 °C. The Pt electrodes were patterned and etched by argon ion milling, passivated with reactively sputtered SiO2, and then metallized with lift-off Ti/Au. The fabricated devices consisted of two-port IDCs embedded in ground-signal-ground, coplanar waveguide (CPW) transmission lines to enable radio-frequency (RF) probing. The sample included open and thru de-embedding structures to remove pad and CPW parasitic impedances. Two-port RF scattering (S) parameters were measured from 100 MHz to 40 GHz while DC bias was stepped from 0 V to 100 V. The IDCs exhibit a high zero-bias radio-frequency (RF) quality factor (Q) approaching 200 at 1 GHz and better than 2.3:1 capacitance tuning for the 300-nm-thick sample. Differences in the Q(V) and C(V) response with varying thicknesses indicate that unknown higher order material phenomena are contributing to the loss and tuning characteristics of the material.

  11. Evaluating the effect placement capacitor and distributed photovoltaic generation for power system losses minimization in radial distribution system

    Science.gov (United States)

    Rahman, Yuli Asmi; Manjang, Salama; Yusran, Ilham, Amil Ahmad

    2018-03-01

    Power loss minimization have many advantagess to the distribution system radial among others reduction of power flow in feeder lines, freeing stress on feeder loading, deterrence of power procurement from the grid and also the cost of loss compensating instruments. This paper, presents capacitor and photovoltaic (PV) placement as alternative means to decrease power system losses. The paper aims to evaluate the best alternative for decreasing power system losses and improving voltage profile in the radial distribution system. To achieve the objectives of paper, they are used three cases tested by Electric Transient and Analysis Program (ETAP) simulation. Firstly, it performs simulation of placement capacitor. Secondly, simulated placement of PV. Lastly, it runs simulation of placement capacitor and PV simultaneously. The simulations were validated using the IEEE 34-bus test system. As a result, they proved that the installation of capacitor and PV integration simultaneously leading to voltage profile correction and power losses minimization significantly.

  12. cw argon laser annealing of anodic oxide on GaAs

    International Nuclear Information System (INIS)

    Chakravarti, S.N.; Das, P.; Webster, R.T.; Bhat, K.N.

    1981-01-01

    Anodic oxide films (850 +- 50 A thick) grown on n + (100) bulk GaAs were subjected to selective area annealing using a cw argon laser operating at an output power of 1.2 W. Capacitance-voltage (C-V) measurements performed on Al-anodic oxide-GaAs MOS capacitor structures show that laser-annealed capacitor dots have greatly reduced field-induced hysteresis effects in their capacitance-voltage characteristics compared to the unannealed ones. The oxide leakage current also shows a significant improvement: the leakage current magnitude of MOS capacitors in laser-annealed oxide island is over four orders of magnitude less than the oxide region which was not exposed to the laser radiation. Dielectric breakdown measurement indicates that laser-annealed capacitors have considerably higher breakdown voltages, about a factor of 2 higher than the unannealed capacitors

  13. Reliability Evaluation of Power Capacitors in a Wind Turbine System

    DEFF Research Database (Denmark)

    Zhou, Dao; Blaabjerg, Frede

    2018-01-01

    With the increasing penetration of wind power, reliable and cost-effective wind energy production is of more and more importance. The doubly-fed induction generator based partial-scale wind power converter is still dominating in the existing wind farms. In this paper, the reliability assessment...... block diagram is used to bridge the gap between the Weibull distribution based component-level individual capacitor and the capacitor bank. A case study of a 2 MW wind power converter shows that the lifetime is significantly reduced from the individual capacitor to the capacitor bank. Besides, the dc...... of power capacitors is studied considering the annual mission profile. According to an electro-thermal stress evaluation, the time-to-failure distribution of both the dc-link capacitor and ac-side filter capacitor is detailed investigated. Aiming for the systemlevel reliability analysis, a reliability...

  14. Capacitor performance limitations in high power converter applications

    DEFF Research Database (Denmark)

    El-Khatib, Walid Ziad; Holbøll, Joachim; Rasmussen, Tonny Wederberg

    2013-01-01

    High voltage low inductance capacitors are used in converters as HVDC-links, snubber circuits and sub model (MMC) capacitances. They facilitate the possibility of large peak currents under high frequent or transient voltage applications. On the other hand, using capacitors with larger equivalent...... series inductances include the risk of transient overvoltages, with a negative effect on life time and reliability of the capacitors. These allowable limits of such current and voltage peaks are decided by the ability of the converter components, including the capacitors, to withstand them over...... the expected life time. In this paper results are described from investigations on the electrical environment of these capacitors, including all the conditions they would be exposed to, thereby trying to find the tradeoffs needed to find a suitable capacitor. Different types of capacitors with the same voltage...

  15. Faraday Rotator 5 kV Capacitor Bank

    International Nuclear Information System (INIS)

    Fetterman, C.C.

    1975-01-01

    A Faraday rotator 5 kV capacitor bank is a pulsed output power supply used to energize Faraday rotators for optical isolation in the ''LLL kJ Glass Laser System.'' Each supply contains either one, two or three parallel 240 μF storage capacitors depending on the size of the isolator used. Generally, the ''A*''(216 μH) isolator is energized with one capacitor, the ''A''(116 μH) isolator uses two capacitors and the ''B''(87 μH) isolator requires three capacitors. All models of isolators have been tested with four capacitors under maximum voltage and 25 feet of RG-217 cable with no hazardous effects. Except for the number of capacitors in each unit, the supplies are otherwise physically identical

  16. Comparison of electron transmittances and tunneling currents in an anisotropic TiNx/HfO2/SiO2/p-Si(100) metal-oxide-semiconductor (MOS) capacitor calculated using exponential- and Airy-wavefunction approaches and a transfer matrix method

    International Nuclear Information System (INIS)

    Noor, Fatimah A.; Abdullah, Mikrajuddin; Sukirno; Khairurrijal

    2010-01-01

    Analytical expressions of electron transmittance and tunneling current in an anisotropic TiN x /HfO 2 /SiO 2 /p-Si(100) metal-oxide-semiconductor (MOS) capacitor were derived by considering the coupling of transverse and longitudinal energies of an electron. Exponential and Airy wavefunctions were utilized to obtain the electron transmittance and the electron tunneling current. A transfer matrix method, as a numerical approach, was used as a benchmark to assess the analytical approaches. It was found that there is a similarity in the transmittances calculated among exponential- and Airy-wavefunction approaches and the TMM at low electron energies. However, for high energies, only the transmittance calculated by using the Airy-wavefunction approach is the same as that evaluated by the TMM. It was also found that only the tunneling currents calculated by using the Airy-wavefunction approach are the same as those obtained under the TMM for all range of oxide voltages. Therefore, a better analytical description for the tunneling phenomenon in the MOS capacitor is given by the Airy-wavefunction approach. Moreover, the tunneling current density decreases as the titanium concentration of the TiN x metal gate increases because the electron effective mass of TiN x decreases with increasing nitrogen concentration. In addition, the mass anisotropy cannot be neglected because the tunneling currents obtained under the isotropic and anisotropic masses are very different. (semiconductor devices)

  17. Effects of the crystallization parameters on the fabrication of ultrathin capacitors of PbTiO3

    Directory of Open Access Journals (Sweden)

    Fernández, R.

    2010-02-01

    Full Text Available Ultrathin ferroelectric films have interesting potential applications, for example, as transducer elements of nanoelectromechanical systems (NEMS. However, to be integrated in devices, several problems related to their preparation must be solved. In this work we focus on the fabrication of functional capacitors, i.e., without electrical shorts, from PbTiO3 ultrathin films obtained by chemical solution deposition. It has been shown that above a certain grain size to thickness ratio the films break up into isolated structures. Therefore, the control of grain growth by a reduction of the crystallization temperature must be analyzed and the effects on the properties of the ferroelectric films described. With the optimized processing conditions, functional PbTiO3 capacitors of around 40 nm thick with less contribution of leakage currents are obtained.Las láminas ultradelgadas ferroeléctricas tienen aplicaciones potenciales de gran interés, por ejemplo, como elementos transductores de los sistemas nanoelectromecánicos (NEMS. Pero para que puedan ser integradas de manera efectiva en dispositivos reales, varios problemas relacionados con su preparación deben ser resueltos primero. En este trabajo nos centramos en la fabricación de condensadores funcionales, es decir, sin cortos eléctricos, a partir de láminas ultadelgadas de PbTiO3 obtenidas por depósito de disoluciones. Se ha demostrado que por encima de un cierto valor del cociente entre el tamaño de grano y el espesor de la lámina, ésta se separa en estructuras aisladas, perdiendo su continuidad. Por tanto, el control del crecimiento de grano a través de la reducción de la temperatura de cristalización debe ser estudiada, así como sus efectos en las propiedades de las láminas ferroeléctricas. Usando condiciones de procesado óptimas se consiguen preparar condensadores funcionales de PbTiO3 de aproximadamente 40 nm de espesor con una baja contribución de las corrientes de pérdidas.

  18. Effects of surface chemical properties of activated carbon modified by amino-fluorination for electric double-layer capacitor.

    Science.gov (United States)

    Jung, Min-Jung; Jeong, Euigyung; Cho, Seho; Yeo, Sang Young; Lee, Young-Seak

    2012-09-01

    The surface of phenol-based activated carbon (AC) was seriatim amino-fluorinated with solution of ammonium hydroxide and hydrofluoric acid in varying ratio to fabricate electrode materials for use in an electric double-layer capacitor (EDLC). The specific capacitance of the amino-fluorinated AC-based EDLC was measured in a 1 M H(2)SO(4) electrolyte, in which it was observed that the specific capacitances increased from 215 to 389 Fg(-1) and 119 and 250 Fg(-1) with the current densities of 0.1 and 1.0 Ag(-1), respectively, in comparison with those of an untreated AC-based EDLC when the amino-fluorination was optimized via seriatim mixed solution of 7.43 mol L(-1) ammonium hydroxide and 2.06 mol L(-1) hydrofluoric acid. This enhancement of capacitance was attributed to the synergistic effects of an increased electrochemical activity due to the formation of surface N- and F-functional groups and increased, specific surface area, and mesopore volumes, all of which resulted from the amino-fluorination of the electrode material. Copyright © 2012 Elsevier Inc. All rights reserved.

  19. Insights into the effects of solvent properties in graphene based electric double-layer capacitors with organic electrolytes

    Science.gov (United States)

    Zhang, Shuo; Bo, Zheng; Yang, Huachao; Yang, Jinyuan; Duan, Liangping; Yan, Jianhua; Cen, Kefa

    2016-12-01

    Organic electrolytes are widely used in electric double-layer capacitors (EDLCs). In this work, the microstructure of planar graphene-based EDLCs with different organic solvents are investigated with molecular dynamics simulations. Results show that an increase of solvent polarity could weaken the accumulation of counter-ions nearby the electrode surface, due to the screen of electrode charges and relatively lower ionic desolvation. It thus suggests that solvents with low polarity could be preferable to yield high EDL capacitance. Meanwhile, the significant effects of the size and structure of solvent molecules are reflected by non-electrostatic molecule-electrode interactions, further influencing the adsorption of solvent molecules on electrode surface. Compared with dimethyl carbonate, γ-butyrolactone, and propylene carbonate, acetonitrile with relatively small-size and linear structure owns weak non-electrostatic interactions, which favors the easy re-orientation of solvent molecules. Moreover, the shift of solvent orientation in surface layer, from parallel orientation to perpendicular orientation relative to the electrode surface, deciphers the solvent twin-peak behavior near negative electrode. The as-obtained insights into the roles of solvent properties on the interplays among particles and electrodes elucidate the solvent influences on the microstructure and capacitive behavior of EDLCs using organic electrolytes.

  20. Capacitor discharge engineering

    CERN Document Server

    Früngel, Frank B A

    1976-01-01

    High Speed Pulse Technology, Volume III: Capacitor Discharge Engineering covers the production and practical application of capacitor dischargers for the generation and utilization of high speed pulsed of energy in different forms. This nine-chapter volume discusses the principles of electric current, voltage, X-rays, gamma rays, heat, beams of electrons, neutrons and ions, magnetic fields, sound, and shock waves in gases and liquids. Considerable chapters consider the applications of capacitor discharges, such as impulse hardening of steel, ultrapulse welding of precision parts, X-ray flash t

  1. Effects of post-deposition oxygen annealing on tuning properties of Ba0.8Sr0.2TiO3 thin-film capacitors for microwave integrated circuits

    International Nuclear Information System (INIS)

    Liu, Y.R.; Lai, P.T.; Li, G.Q.; Li, B.; Peng, J.B.; Lo, H.B.

    2005-01-01

    Barium strontium titanate (BST) thin-films deposited on a SiO 2 /Si substrate by argon ion-beam sputtering technique were annealed at 400, 500 and 600 deg. C in oxygen for 30 min, respectively, and were used to fabricate integrated parallel-plate capacitors by standard integrated-circuit technology. These capacitors can achieve tunability greater than 60% at an applied dc voltage of 2 V and a frequency of 100 kHz at room temperature. Considering tunability, loss factor and hysteresis effect, the BST thin-film annealed at 500 deg. C is superior for making tunable microwave integrated capacitors. The effects of annealing treatment in oxygen on the tuning properties of the thin-film capacitors are analyzed, and the results indicate that the tunability is strongly dependent on both oxygen vacancies and negatively charged oxygen, trapped at the grain boundary and/or at the electrode/dielectric interface

  2. Suspended graphene variable capacitor

    OpenAIRE

    AbdelGhany, M.; Mahvash, F.; Mukhopadhyay, M.; Favron, A.; Martel, R.; Siaj, M.; Szkopek, T.

    2016-01-01

    The tuning of electrical circuit resonance with a variable capacitor, or varactor, finds wide application with the most important being wireless telecommunication. We demonstrate an electromechanical graphene varactor, a variable capacitor wherein the capacitance is tuned by voltage controlled deflection of a dense array of suspended graphene membranes. The low flexural rigidity of graphene monolayers is exploited to achieve low actuation voltage in an ultra-thin structure. Large arrays compr...

  3. Pseudo-capacitor device for aqueous electrolytes

    Science.gov (United States)

    Prakash, Jai; Thackeray, Michael M.; Dees, Dennis W.; Vissers, Donald R.; Myles, Kevin M.

    1998-01-01

    A pseudo-capacitor having a high energy storage capacity develops a double layer capacitance as well as a Faradaic or battery-like redox reaction, also referred to as pseudo-capacitance. The Faradaic reaction gives rise to a capacitance much greater than that of the typical ruthenate oxide ultracapacitor which develops only charge separation-based double layer capacitance. The capacitor employs a lead and/or bismuth/ruthenate and/or iridium system having the formula A.sub.2 ›B.sub.2-x Pb.sub.x !O.sub.7-y, where A=Pb, Bi, and B=Ru, Ir, and Ocapacitor. The amount of expensive ruthenate and iridium can be substantially reduced in the pseudo-capacitor by increasing the lead content while improving energy storage capacity.

  4. Energy Efficient Graphene Based High Performance Capacitors.

    Science.gov (United States)

    Bae, Joonwon; Kwon, Oh Seok; Lee, Chang-Soo

    2017-07-10

    Graphene (GRP) is an interesting class of nano-structured electronic materials for various cutting-edge applications. To date, extensive research activities have been performed on the investigation of diverse properties of GRP. The incorporation of this elegant material can be very lucrative in terms of practical applications in energy storage/conversion systems. Among various those systems, high performance electrochemical capacitors (ECs) have become popular due to the recent need for energy efficient and portable devices. Therefore, in this article, the application of GRP for capacitors is described succinctly. In particular, a concise summary on the previous research activities regarding GRP based capacitors is also covered extensively. It was revealed that a lot of secondary materials such as polymers and metal oxides have been introduced to improve the performance. Also, diverse devices have been combined with capacitors for better use. More importantly, recent patents related to the preparation and application of GRP based capacitors are also introduced briefly. This article can provide essential information for future study. Copyright© Bentham Science Publishers; For any queries, please email at epub@benthamscience.org.

  5. Effect of the capacity design of activated carbon cathode on the electrochemical performance of lithium-ion capacitors

    International Nuclear Information System (INIS)

    Shi, Zhiqiang; Zhang, Jin; Wang, Jing; Shi, Jingli; Wang, Chengyang

    2015-01-01

    Highlights: • MCMB with the optimal pre-lithiation capacity as negative electrode in LIC. • The capacity design of cathode affects the electrochemical performance of LIC. • The optimal designed capacity of positive electrode has been proposed. - ABSTRACT: Lithium-ion capacitors (LICs) are assembled with activated carbon (AC) cathode and pre-lithiated mesocarbon microbeads (MCMB) anode. The effect of AC cathode capacity design on the electrochemical performance of LIC is investigated by the galvanostatic charging-discharging and electrochemical impedance tests. As the designed capacity of AC positive electrode is lower than 50 mAh g −1 , the working potential of negative electrode is always in the low and stable plateau, which is conductive to the sufficient utilization and the working potential stability of positive electrode. When the designed capacity of positive electrode is higher than 50 mAh g −1 , the instability of negative electrode directly causes the reduced utilization and shortened working potential range of the positive electrode, which is responsible for the capacity attenuation and cycle performance deterioration of LIC. The positive electrode capacity design can realize the optimization of electrochemical performance of LIC. LIC50 exhibits the optimal electrochemical performance, high energy density up to 92.3 Wh kg −1 and power density as high as 5.5 kW kg −1 (based on active material mass of two electrodes), excellent capacity retention of 97.0 % after 1000 cycles. The power density and cycle performance of LIC can be further improved by reducing the AC positive electrode designed capacity

  6. Effect of pre-lithiation degrees of mesocarbon microbeads anode on the electrochemical performance of lithium-ion capacitors

    International Nuclear Information System (INIS)

    Zhang, Jin; Shi, Zhiqiang; Wang, Chengyang

    2014-01-01

    Highlights: • MCMB with different pre-lithiation capacity as negative electrode in LIC. • Pre-lithiation improves the electrochemical performance of LIC. • The optimal pre-lithiation capacity has been proposed. - Abstract: Lithium ion capacitors are assembled with pre-lithiated mesocarbon microbeads (LMCMB) anode and activated carbon (AC) cathode. The effect of pre-lithiation degrees on the crystal structure of MCMB electrode and the electrochemical capacitance behavior of LIC are investigated by X-ray diffraction (XRD) and the charge-discharge test of three-electrode cell. The structure of graphite still maintained when the pre-lithiation capacity is less than 200 mAh g −1 , phase transition takes place with the increase of pre-lithiation capacity from 250 mAh g −1 to 350 mAh g −1 . Pre-lithiation degrees of MCMB anode greatly affect the charge-discharge process and behavior, which impact on the electrochemical performance of LIC. The LIC with pre-lithiation capacity of 300 mAh g −1 has the optimal electrochemical performance. The energy density of LIC300 is up to 92.3 Wh kg −1 , the power density as high as 5.5 kW kg −1 and the capacity retention is 97.0% after 1000 cycles. The excellent electrochemical performance benefits from the appropriate pre-lithiation capacity of negative electrode. The appropriate pre-lithiation ensures the working voltage of negative electrode in low and relative stable charge-discharge platform corresponding to the mutual phase transition from the second stage graphite intercalation compound (LiC 12 ) to the first stage graphite intercalation compound (LiC 6 ). The stable charge-discharge platform of negative electrode is conductive to the sufficient utilization of AC positive electrode

  7. A Study on N{sub 2}O Direct Oxidation Process with Re-oxidation Annealing for the Improvement of Interface Properties in 4H-SiC MOS Capacitor

    Energy Technology Data Exchange (ETDEWEB)

    Cho, Doohyung; Park, Kunsik; Yoo, Seongwook; Kim, Sanggi; Lee, Jinhwan; Kim, Kwangsoo [Electronics and Telecommunications Research Institute (ETRI), Daejeon (Korea, Republic of)

    2017-08-15

    The effect of N{sub 2}O direct oxidation processes with re-oxidation on SiC/SiO{sub 2} interface characteristics has been investigated. With different oxidation and post oxidation annealing (POA) processes, the flat-band voltage, effective dielectric charge density, and interface trap density are obtained from the capacitance-voltage curves. For the proposed N{sub 2}O direct oxidation processes with re-oxidation, oxides were grown in N{sub 2}O ambient, diluted in high-purity N{sub 2} to 10% concentration, for 5 h at 1230 ℃. After the growth, some samples were annealed additionally at 1200 ℃ in O{sub 2} or H{sub 2}O for 20 min. N{sub 2}O direct oxidation with re-oxidation processes was confirmed that SiC/SiO{sub 2} interface properties and dielectric stability have better performance than with other conventional oxidation processes. This oxidation technique is expected to improve gate dielectric stability for application to SiC MOS devices; in particular, it can be used to obtain high-quality SiC/SiO{sub 2} interface properties.

  8. Imprint and oxygen deficiency in (Pb,La)(Zr,Ti)O3 thin-film capacitors with La-Sr-Co-O electrodes

    International Nuclear Information System (INIS)

    Lee, J.; Ramesh, R.; Keramidas, V.G.; Warren, W.L.; Pike, G.E.; Evans, J.T. Jr.

    1995-01-01

    La-Sr-Co-O/Pb-La-Zr-Ti-O/La-Sr-Co-O thin-film capacitors have been grown in various oxygen ambients by pulsed laser deposition. As the oxygen ambient became more reducing, the capacitors developed more voltage asymmetry in hysteresis loops and a more preferred polarization state directed towards the top electrode. PLZT capacitors cooled in a fully oxidizing atmosphere (i.e., 1 atm oxygen pressure) exhibited nominally symmetric hysteresis loops and also showed little imprint both with and without fully saturating bias fields. We find that ambient oxygen pressure is an important process parameter and the imprint behavior is closely related with ambient oxygen induced effects such as oxygen vacancies, its related defect-dipole complexes and trapping of free charges. The different imprint behavior under negative and positive bias also suggests that the dipolar-defect complexes tend to cause imprint in PLZT capacitors

  9. Effects of the LiFePO4 content and the preparation method on the properties of (LiFePO4+AC/Li4Ti5O12 hybrid battery–capacitors

    Directory of Open Access Journals (Sweden)

    XUE BU HU

    2010-09-01

    Full Text Available Two composite cathode materials containing LiFePO4 and activated carbon (AC were synthesized by an in-situ method and a direct mixing technique, which are abbreviated as LAC and DMLAC, respectively. Hybrid battery–capacitors LAC/Li4Ti5O12 and DMLAC/Li4Ti5O12 were then assembled. The effects of the content of LiFePO4 and the preparation method on the cyclic voltammograms, the rate of charge–discharge and the cycle performance of the hybrid battery–capacitors were investigated. The results showed the overall electrochemical performance of the hybrid battery–capacitors was the best when the content of LiFePO4 in the composite cathode materials was in the range from 11.8 to 28.5 wt. %, while the preparation method had almost no impact on the electrochemical performance of the composite cathodes and hybrid battery–capacitors. Moreover, the hybrid battery–capacitor devices had a good cycle life performance at high rates. After 1000 cycles, the capacity loss of the DMLAC/Li4Ti5O12 hybrid battery–capacitor device at 4C was no more than 4.8 %. Moreover, the capacity loss would be no more than 9.6 % after 2000 cycles at 8C.

  10. Interaction between depolarization effects, interface layer, and fatigue behavior in PZT thin film capacitors

    Science.gov (United States)

    Böttger, U.; Waser, R.

    2017-07-01

    The existence of non-ferroelectric regions in ferroelectric thin films evokes depolarization effects leading to a tilt of the P(E) hysteresis loop. The analysis of measured hysteresis of lead zirconate titanate (PZT) thin films is used to determine a depolarization factor which contains quantitative information about interfacial layers as well as ferroelectrically passive zones in the bulk. The derived interfacial capacitance is smaller than that estimated from conventional extrapolation techniques. In addition, the concept of depolarization is used for the investigation of fatigue behavior of PZT thin films indicating that the mechanism of seed inhibition, which is responsible for the effect, occurs in the entire film.

  11. Thermal and oxidation effects

    Energy Technology Data Exchange (ETDEWEB)

    Adamcova, J.; Kolaoikova, I. [Prague Univ., Institute of Geochemistry, Mineralogy and Mineral Resources, Faculty of Science, Charles (Czech Republic); Adamcova, J. [Czech Geological Survey, Geologicka 6, Prague (Czech Republic); Kaufhold, S.; Dohrmann, R. [BGR, Federal Institute for Geoscience and Natural Resources, Hannover (Germany); Dohrmann, R. [LBEG, State Authority for Mining, Energy, and Geology, Hannover (Germany); Craen, M. de; Van Geet, M.; Honty, M.; Wang, L.; Weetjens, E. [CK-CEN - Belgian Nuclear Research Centre - Environment, Healt and Safety Institute, Mol (Belgium); Van Geet, M. [ONDRAF/NIRAS - Belgian Agency for Radioactive Waste and Enriched Fissile Materials, Brussel (Belgium); Pozzi, J.P.; Janots, D. [Ecole Normale Paris, CNRS Lab. de Geologie, 75 - Paris (France); Aubourg, C. [Universite Cergy Pontoise, CNRS Lab. de Tectonique, 95 (France); Cathelineau, M.; Rousset, D.; Ruck, R. [Nancy-1 Univ. Henri Poincare, CNRS G2R, 54 (France); Clauer, N. [Strasbourg-1 Univ., CNRS CGS, 67 (France); Liewig, N. [Institut Pluridisciplinaire Hubert Curien, CNRS, 67 - Strasbourg (France); Techer, I. [Nimes Univ., CNRS Cerege, 30 (France)

    2007-07-01

    This session gathers 4 articles dealing with: the alteration processes in bentonites: mineralogical and structural changes during long-term and short-term experiments (J. Adamcov, I. Kolarikova); the implications from the lot experiment regarding the selection of an optimum HLRW bentonite (S. Kaufhold, R. Dohrmann); the extent of oxidation in Boom clay as a result of excavation and ventilation of the HADES URF: Experimental and modelling assessments (M. De Craen, M. Van Geet, M. Honty, L. Wang, E. Weetjens); and the magnetic and mineralogical alterations under thermal stress at 95 deg. C of Callovo-Oxfordian clay-stones (Bure, France) and lower Dogger Mont Terri clay-stones, Switzerland (J.P. Pozzi, C. Aubourg, D. Janots, M. Cathelineau, N. Clauer, D. Rousset, R. Ruck, N. Liewig, I. Techer)

  12. Tuning the resistive switching memory in a metal–ferroelectric–semiconductor capacitor by field effect structure

    Energy Technology Data Exchange (ETDEWEB)

    Wang, S.Y., E-mail: shouyu.wang@yahoo.com [College of Physics and Electronic Information Science, Tianjin Normal University, Tianjin 300074 (China); Guo, F.; Wang, X. [College of Physics and Electronic Information Science, Tianjin Normal University, Tianjin 300074 (China); Liu, W.F., E-mail: wfliu@tju.edu.cn [Department of Applied Physics, Faculty of Science, Tianjin University, Weijin Road, Nankai District, Tianjin 300072 (China); Gao, J., E-mail: jugao@hku.hk [Department of Physics, the University of Hong Kong, Pokfulam Road (Hong Kong)

    2015-11-30

    Highlights: • Bistable or tristable electrically conducting state is observed. • Coefficient can be tuned in situ by modulating carrier's density. • The RS effects may be of significance for multi-source controlled memory devices. - Abstract: Resistive switching (RS) effects based on a correlation between ferroelectric polarization and conductivity might become of particular interest for nonvolatile memory applications, because they are not subjected to the scaling restrictions. Here we report on RS behaviors modulated by a reversal of ferroelectric polarization in heterostructures comprising of a ferroelectric layer and a semiconducting manganite film. It is found that electrically conducting state is bistable or even tristable; and via the polarization flipping, a maximum resistive switching coefficient (R{sub max}/R{sub min}) is found to be larger than 3000 with bias of 6 V in Ag/BaTiO{sub 3}/La{sub 0.8}Ca{sub 0.2}MnO{sub 3} at room temperature. More importantly, employing field-effect structure with ferroelectric PMN-PT as substrate, we found that the resistive switching behaviors can be tuned in situ by modulating the concentration of carriers in the semiconducting manganite layer. Possible mechanisms are discussed on the basis of the interplay of bound ferroelectric charges, charged defects in ferroelectric layer and mobile carriers in manganite thin films. The giant RS effects observed here may be of significance for memory devices by combing electronic conduction with magnetic, spintronic, and optical functionalities.

  13. Direct Mismatch Characterization of femto-Farad Capacitors

    KAUST Repository

    Omran, Hesham

    2015-08-17

    Reducing the capacitance of programmable capacitor arrays, commonly used in analog integrated circuits, is necessary for low-energy applications. However, limited mismatch data is available for small capacitors. We report mismatch measurement for a 2fF poly-insulator-poly (PIP) capacitor, which is the smallest reported PIP capacitor to the best of the authors’ knowledge. Instead of using complicated custom onchip circuitry, direct mismatch measurement is demonstrated and verified using Monte Carlo Simulations and experimental measurements. Capacitive test structures composed of 9 bit programmable capacitor arrays (PCAs) are implemented in a low-cost 0:35m CMOS process. Measured data is compared to mismatch of large PIP capacitors, theoretical models, and recently published data. Measurement results indicate an estimated average relative standard deviation of 0.43% for the 2fF unit capacitor, which is better than the reported mismatch of metal-oxide-metal (MOM) fringing capacitors implemented in an advanced 32nm CMOS process.

  14. Direct Mismatch Characterization of femto-Farad Capacitors

    KAUST Repository

    Omran, Hesham; Elafandy, Rami T.; Arsalan, Muhammad; Salama, Khaled N.

    2015-01-01

    Reducing the capacitance of programmable capacitor arrays, commonly used in analog integrated circuits, is necessary for low-energy applications. However, limited mismatch data is available for small capacitors. We report mismatch measurement for a 2fF poly-insulator-poly (PIP) capacitor, which is the smallest reported PIP capacitor to the best of the authors’ knowledge. Instead of using complicated custom onchip circuitry, direct mismatch measurement is demonstrated and verified using Monte Carlo Simulations and experimental measurements. Capacitive test structures composed of 9 􀀀 bit programmable capacitor arrays (PCAs) are implemented in a low-cost 0:35m CMOS process. Measured data is compared to mismatch of large PIP capacitors, theoretical models, and recently published data. Measurement results indicate an estimated average relative standard deviation of 0.43% for the 2fF unit capacitor, which is better than the reported mismatch of metal-oxide-metal (MOM) fringing capacitors implemented in an advanced 32nm CMOS process.

  15. Experimental analysis of an MIM capacitor with a concave shield

    International Nuclear Information System (INIS)

    Liu Lintao; Yu Mingyan; Wang Jinxiang

    2009-01-01

    A novel shielding scheme is developed by inserting a concave shield between a metal-insulator-metal (MIM) capacitor and the silicon substrate. Chip measurements reveal that the concave shield improves the quality factor by 11% at 11.8 GHz and 14% at 18.8 GHz compared with an unshielded MIM capacitor. It also alleviates the effect on shunt capacitance between the bottom plate of the MIM capacitor and the shield layer. Moreover, because the concave shields simplify substrate modeling, a simple circuit model of the MIM capacitor with concave shield is presented for radio frequency applications.

  16. The effect of dispersion status with functionalized graphenes for electric double-layer capacitors

    International Nuclear Information System (INIS)

    Chen, Y.-R.; Chiu, K.-F.; Lin, H.C.; Hsieh, C.-Y.; Tsai, C.B.; Chu, B.T.T.

    2014-01-01

    Highlights: • MrGO/NMP can reduce the IR drops and R ct of the supercapacitors. • M-rGO can provide excellent plane-to-point conducting network. • M-rGO can effectively enhance high rate performance of supercapacitors. • M-rGO additive can deliver high capacity under high rate cycling. - Abstract: Graphene with oxygen (M-rGO and H-rGO) and nitrogen (N-rGO) related functional groups have been fabricated. Reduced graphenes including H-rGO, M-rGO and N-rGO were mixed with activated carbons as the composite electrodes and characterized for supercapacitors. The effects of the functional groups on graphenes as the conductive additive have been investigated. It was found that a suitable content of functional groups can improve the stability of dispersion, and therefore reduce the internal resistance (IR drop) and charge transfer resistance (R ct ) resulting in higher rate capability. The supercapacitor with M-rGO and KS6 as additive at the activated carbon electrode can be operated at a rate as high as 6 A/g and exhibits a capacitance of 208 F/g, whereas the supercapacitor using only KS6 as additive shows a capacitance of only 107 F/g. The graphene contained supercapacitor has been cycled over 2000 times at 4 A/g with almost no capacitance fading

  17. The effect of dispersion status with functionalized graphenes for electric double-layer capacitors

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Y.-R., E-mail: d98527015@ntu.edu.tw [Department of Materials Science and Engineering, National Taiwan University, No. 1, Sec. 4, Roosevelt Rd, Taipei 10617, Taiwan (China); Department of Materials Science and Engineering, Feng Chia University, 100 Wen Hwa Rd, 407 Taichung, Taiwan (China); Chiu, K.-F. [Department of Materials Science and Engineering, Feng Chia University, 100 Wen Hwa Rd, 407 Taichung, Taiwan (China); Lin, H.C. [Department of Materials Science and Engineering, National Taiwan University, No. 1, Sec. 4, Roosevelt Rd, Taipei 10617, Taiwan (China); Hsieh, C.-Y. [Enerage Inc., No. 5, Ligong 3rd Rd, Wujie Township, Yilan County 26841, Taiwan (China); Tsai, C.B. [Taiwan Textile Research Institute, No. 6, Chengtian Rd, Tucheng City, Taipei 23674, Taiwan (China); Chu, B.T.T. [Laboratory for Functional Polymers, Swiss Federal Laboratories for Materials Science and Technology (Empa), Überlandstrasse 129, 8600 Dübendorf (Switzerland)

    2014-12-15

    Highlights: • MrGO/NMP can reduce the IR drops and R{sub ct} of the supercapacitors. • M-rGO can provide excellent plane-to-point conducting network. • M-rGO can effectively enhance high rate performance of supercapacitors. • M-rGO additive can deliver high capacity under high rate cycling. - Abstract: Graphene with oxygen (M-rGO and H-rGO) and nitrogen (N-rGO) related functional groups have been fabricated. Reduced graphenes including H-rGO, M-rGO and N-rGO were mixed with activated carbons as the composite electrodes and characterized for supercapacitors. The effects of the functional groups on graphenes as the conductive additive have been investigated. It was found that a suitable content of functional groups can improve the stability of dispersion, and therefore reduce the internal resistance (IR drop) and charge transfer resistance (R{sub ct}) resulting in higher rate capability. The supercapacitor with M-rGO and KS6 as additive at the activated carbon electrode can be operated at a rate as high as 6 A/g and exhibits a capacitance of 208 F/g, whereas the supercapacitor using only KS6 as additive shows a capacitance of only 107 F/g. The graphene contained supercapacitor has been cycled over 2000 times at 4 A/g with almost no capacitance fading.

  18. The design and implementation of on-line monitoring system for UHV compact shunt capacitors

    Science.gov (United States)

    Tao, Weiliang; Ni, Xuefeng; Lin, Hao; Jiang, Shengbao

    2017-08-01

    Because of the large capacity and compact structure of the UHV compact shunt capacitor, it is difficult to take effective measures to detect and prevent the faults. If the fault capacitor fails to take timely maintenance, it will pose a threat to the safe operation of the system and the life safety of the maintenance personnel. The development of UHV compact shunt capacitor on-line monitoring system can detect and record the on-line operation information of UHV compact shunt capacitors, analyze and evaluate the early fault warning signs, find out the fault capacitor or the capacitor with fault symptom, to ensure safe and reliable operation of the system.

  19. Fabrication and electrical properties of metal-oxide semiconductor capacitors based on polycrystalline p-Cu{sub x}O and HfO{sub 2}/SiO{sub 2} high-{kappa} stack gate dielectrics

    Energy Technology Data Exchange (ETDEWEB)

    Zou Xiao [Department of Electronic Science and Technology, School of Physical Science and Technology, Wuhan University, Wuhan, 430074 (China); Department of Electromachine Engineering, Jianghan University, Wuhan, 430056 (China); Fang Guojia, E-mail: gjfang@whu.edu.c [Department of Electronic Science and Technology, School of Physical Science and Technology, Wuhan University, Wuhan, 430074 (China); Yuan Longyan; Liu Nishuang; Long Hao; Zhao Xingzhong [Department of Electronic Science and Technology, School of Physical Science and Technology, Wuhan University, Wuhan, 430074 (China)

    2010-05-31

    Polycrystalline p-type Cu{sub x}O films were deposited after the growth of HfO{sub 2} dielectric on Si substrate by pulsed laser deposition, and Cu{sub x}O metal-oxide-semiconductor (MOS) capacitors with HfO{sub 2}/SiO{sub 2} stack gate dielectric were primarily fabricated and investigated. X-ray diffraction and X-ray photoelectron spectroscopy were applied to analyze crystalline structure and Cu{sup +}/Cu{sup 2+} ratios of Cu{sub x}O films respectively. SiO{sub 2} interlayer formed between the high-{kappa} dielectric and substrate was estimated by the transmission electron microscope. Results of electrical characteristic measurement indicate that the permittivity of HfO{sub 2} is about 22, and the gate leakage current density of MOS capacitor with 11.3 nm HfO{sub 2}/SiO{sub 2} stack dielectrics is {approx} 10{sup -4} A/cm{sup 2}. Results also show that the annealing in N{sub 2} can improve the quality of Cu{sub x}O/HfO{sub 2} interface and thus reduce the gate leakage density.

  20. Evaluation of Case Size 0603 BME Ceramic Capacitors

    Science.gov (United States)

    Teverovsky, Alexander A.

    2015-01-01

    High volumetric efficiency of commercial base metal electrode (BME) ceramic capacitors allows for a substantial reduction of weight and sizes of the parts compared to currently used military grade precious metal electrode (PME) capacitors. Insertion of BME capacitors in space applications requires a thorough analysis of their performance and reliability. In this work, six types of cases size 0603 BME capacitors from three vendors have been evaluated. Three types of multilayer ceramic capacitors (MLCCs) were designed for automotive industry and three types for general purposes. Leakage currents in the capacitors have been measured in a wide range of voltages and temperatures, and measurements of breakdown voltages (VBR) have been used to assess the proportion and severity of defects in the parts. The effect of soldering-related thermal shock stresses was evaluated by analysis of distributions of VBR for parts in 'as is' condition and after terminal solder dip testing at 350 C. Highly Accelerated Life Testing (HALT) at different temperatures was used to assess the activation energy of degradation of leakage currents and predict behavior of the parts at life test and normal operating conditions. To address issues related to rework and manual soldering, capacitors were soldered onto different substrates at different soldering conditions. The results show that contrary to a common assumption that large-size capacitors are mostly vulnerable to soldering stresses, cracking in small size capacitors does happen unless special measures are taken during assembly processes.

  1. Nonmedical application of computed tomography to power capacitor quality assesment

    International Nuclear Information System (INIS)

    Kruger, R.P.

    1981-01-01

    Present research and development efforts at Los Alamos Scientific Laboratory require the design and use of high-efficiency rapid-discharge energy storage capacitors for laser isotope separation and plasma physics programs. In these applications, capacitors are subjected to electrical, mechanical, thermal, and other environmental stresses. These stresses cause the dielectric constant to change due to gasification from arcing at nonsoldering connections, which produce a chemical reduction of the dielectric material. This effectively limits the lifetime of the capacitor. The programs mentioned above require capacitors with a multikilohertz frequency response at a current of tens of kiloamperes and a voltage of at least 100 kV. The lifetime of such capacitors should exceed 10 10 charge/discharge cycles. Such capacitors do not presently exist. The exploration of new capacitor designs will require the use of both electrical functional tests and tests that show the changes in internal physical structure as the capacitor is repeatedly stressed by the charge/discharge cycle. The integration of electrical and structural tests throughout the life cycle of a candidate capacitor makes it imperative that the structural integrity tests be nondestructive. Computed tomography (CT) makes this integration possible. The work reported here is the result of a pilot project designed to show the potential use of CT for this application. This work includes visualization of material defects using both a layered sequence of conventional tomographic slices and orthogonal multiangular pseudoradiographs generated from these slices

  2. Radiation Effects on the Electrical Properties of Hafnium Oxide Based MOS Capacitors

    Science.gov (United States)

    2011-03-01

    evaporator . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 12. Copper crucible . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21...picture shows the chamber, controls, and pumps. Figure 12. A copper crucible held a cylindrical pellet of the contact metal. An electron beam evaporated

  3. Electrically tuned super-capacitors

    OpenAIRE

    Chowdhury, Tazima S.; Grebel, Haim

    2015-01-01

    Fast charging and discharging of large amounts of electrical energy make super-capacitors ideal for short-term energy storage [1-5]. In its simplest form, the super-capacitor is an electrolytic capacitor made of an anode and a cathode immersed in an electrolyte. As for an ordinary capacitor, minimizing the charge separation distance and increasing the electrode area increase capacitance. In super-capacitors, charge separation is of nano-meter scale at each of the electrode interface (the Helm...

  4. Trench capacitor and method for producing the same

    NARCIS (Netherlands)

    2009-01-01

    A method of fabricating a trench capacitor, and a trench capacitor fabricated thereby, are disclosed. The method involves the use of a vacuum impregnation process for a sol-gel film, to facilitate effective deposition of high- permittivity materials within a trench in a semiconductor substrate, to

  5. Metallized Film Capacitor Lifetime Evaluation and Failure Mode Analysis

    CERN Document Server

    Gallay, R.

    2015-06-15

    One of the main concerns for power electronic engineers regarding capacitors is to predict their remaining lifetime in order to anticipate costly failures or system unavailability. This may be achieved using a Weibull statistical law combined with acceleration factors for the temperature, the voltage, and the humidity. This paper discusses the different capacitor failure modes and their effects and consequences.

  6. Capacitor ageing in electronic devices

    Directory of Open Access Journals (Sweden)

    Richard B. N. Vital

    2015-10-01

    Full Text Available The moment when an electronic component doesn’t work like requirements, previously established is a task that need to be considered since began of a system design. However, the use of different technologies, operating under several environmental conditions, makes a component choice a complex step in system design. This paper analyzes the effects that ageing phenomenon of capacitors may introduce in electronic devices operation. For this reason, reliability concepts, processes and mechanism of degradation are presented. Additionally, some mathematical models are presented to assist maintenance activities or component replacement. The presented approach compares the operability of intact and aged components.

  7. Mechanical states in wound capacitors

    International Nuclear Information System (INIS)

    Allen, J.J.; Reuter, R.C. Jr.

    1989-01-01

    The winding process is encountered frequently in manufacturing, such as winding of polymer films and paper, laminated pressure vessel construction, and the manufacture of wound capacitors. The winding of capacitors will typically involve hundreds of plies of conductor and dielectric wound over a core. Due to the large number of layers, the calculation of the mechanical studies within a wound capacitor is a significant computational task. The focus of Part II of this paper is the formulation and application of optimization techniques for the design of wound capacitors. The design criteria to be achieved is a specified uniform wound tension in a capacitor. The paper will formulate an optimization statement of the wound capacitor design problem, develop a technique for reducing the numerical calculation required to repeatedly analyze the capacitor as required by the optimization algorithm, and apply the technique to an example. 4 refs., 13 figs., 4 tabs

  8. Control of magnetism by electrical charge doping or redox reactions in a surface-oxidized Co thin film with a solid-state capacitor structure

    Science.gov (United States)

    Hirai, T.; Koyama, T.; Chiba, D.

    2018-03-01

    We have investigated the electric field (EF) effect on magnetism in a Co thin film with a naturally oxidized surface. The EF was applied to the oxidized Co surface through a gate insulator layer made of HfO2, which was formed using atomic layer deposition (ALD). The efficiency of the EF effect on the magnetic anisotropy in the sample with the HfO2 layer deposited at the appropriate temperature for the ALD process was relatively large compared to the previously reported values with an unoxidized Co film. The coercivity promptly and reversibly followed the variation in gate voltage. The modulation of the channel resistance was at most ˜0.02%. In contrast, a dramatic change in the magnetic properties including the large change in the saturation magnetic moment and a much larger EF-induced modulation of the channel resistance (˜10%) were observed in the sample with a HfO2 layer deposited at a temperature far below the appropriate temperature range. The response of these properties to the gate voltage was very slow, suggesting that a redox reaction dominated the EF effect on the magnetism in this sample. The frequency response for the capacitive properties was examined to discuss the difference in the mechanism of the EF effect observed here.

  9. The Effect of Proton Energy on SEU Cross-Section of a 16Mbit TFT PMOS SRAM with DRAM Capacitors

    CERN Document Server

    Uznanski, Slawosz; Blackmore, Ewart; Brugger, Markus; Gaillard, Remi; Mekki, Julien; Todd, Benjamin; Trinczek, Michael; Vilar Villanueva, Andrea

    2014-01-01

    Proton experimental data are analyzed for a 16-Mbit Thin-Film-Transistor (TFT) PMOS Static Random Access Memory (SRAM) with DRAM capacitors. The presence of high-Z materials as tungsten causes an unusual increase of the Single Event Upset (SEU) proton cross-section for the energies above 100MeV. Monte-Carlo simulations reproduce the experimentally measured cross-sections up to 480MeV and predict a further increase up to GeV energies. The implications of this increase are analyzed in the context of the LHC and other radiation environments where a significant fraction of the fluence lies above 100MeV.

  10. SOGI-based capacitor voltage feedback active damping in LCL-filtered grid converters

    DEFF Research Database (Denmark)

    Xin, Zhen; Wang, Xiongfei; Loh, Poh Chiang

    2015-01-01

    The capacitor voltage feedback active damping control is an attractive way to suppress LCL-filter resonance especially for the systems where the capacitor voltage is used for grid synchronization, since no extra sensors are added. The derivative is the core of the capacitor voltage feedback active...... derivative is more suited for capacitor voltage feedback active damping control. Experimental results validate the effectiveness of the proposed method....

  11. A quick method to determine the capacitance characteristics of thin layer X5R multilayer capacitors

    NARCIS (Netherlands)

    Mikkenie, R.; Steigelmann, O.; Groen, W.A.; ten Elshof, Johan E.

    2012-01-01

    The effect of Y2O3 concentration on the dielectric properties of ceramic disc capacitors and multilayer capacitors containing 50 dielectric layers with an approximate thickness of 3 μm were investigated. The relative permittivity and temperature coefficient of capacity of multilayer capacitors at

  12. A quick method to determine the capacitance characteristics of thin layer X5R multilayer capacitors

    NARCIS (Netherlands)

    Mikkenie, R.; Steigelmann, O.; Groen, W.A.; Elshof, J.E. ten

    2012-01-01

    The effect of Y2O3 concentration on the dielectric properties of ceramic disc capacitors and multilayer capacitors containing 50 dielectric layers with an approximate thickness of 3µm were investigated. The relative permittivity and temperature coefficient of capacity of multilayer capacitors at low

  13. Absorption Voltages and Insulation Resistance in Ceramic Capacitors with Cracks

    Science.gov (United States)

    Teverovsky, Alexander

    2016-01-01

    Time dependence of absorption voltages (Vabs) in different types of low-voltage X5R and X7R ceramic capacitors was monitored for a maximum duration of hundred hours after polarization. To evaluate the effect of mechanical defects on Vabs, cracks in the dielectric were introduced either mechanically or by thermal shock. The maximum absorption voltage, time to roll-off, and the rate of voltage decrease are shown to depend on the crack-related leakage currents and insulation resistance in the parts. A simple model that is based on the Dow equivalent circuit for capacitors with absorption has been developed to assess the insulation resistance of capacitors. Standard measurements of the insulation resistance, contrary to the measurements based on Vabs, are not sensitive to the presence of mechanical defects and fail to reveal capacitors with cracks. Index Terms: Ceramic capacitor, insulation resistance, dielectric absorption, cracking.

  14. Capacitor Monitoring for Modular Multilevel Converters

    DEFF Research Database (Denmark)

    Deng, Fujin; Liu, Dong; Wang, Yanbo

    2017-01-01

    ). The capacitor monitoring in each SM of the MMC is an important issue, which would affect the performance of the MMC. This paper proposed an effective monitoring method for the capacitance in each SM of the MMC. The proposed method reveals the relationship between the arm average capacitance and the capacitance...

  15. Capacitor assembly and related method of forming

    Science.gov (United States)

    Zhang, Lili; Tan, Daniel Qi; Sullivan, Jeffrey S.

    2017-12-19

    A capacitor assembly is disclosed. The capacitor assembly includes a housing. The capacitor assembly further includes a plurality of capacitors disposed within the housing. Furthermore, the capacitor assembly includes a thermally conductive article disposed about at least a portion of a capacitor body of the capacitors, and in thermal contact with the capacitor body. Moreover, the capacitor assembly also includes a heat sink disposed within the housing and in thermal contact with at least a portion of the housing and the thermally conductive article such that the heat sink is configured to remove heat from the capacitor in a radial direction of the capacitor assembly. Further, a method of forming the capacitor assembly is also presented.

  16. Fractal Structures For Mems Variable Capacitors

    KAUST Repository

    Elshurafa, Amro M.; Radwan, Ahmed Gomaa Ahmed; Emira, Ahmed A.; Salama, Khaled N.

    2014-01-01

    In accordance with the present disclosure, one embodiment of a fractal variable capacitor comprises a capacitor body in a microelectromechanical system (MEMS) structure, wherein the capacitor body has an upper first metal plate with a fractal shape

  17. Electrical properties of metal/Al2O3/In0.53Ga0.47As capacitors grown on InP

    Science.gov (United States)

    Ferrandis, Philippe; Billaud, Mathilde; Duvernay, Julien; Martin, Mickael; Arnoult, Alexandre; Grampeix, Helen; Cassé, Mikael; Boutry, Hervé; Baron, Thierry; Vinet, Maud; Reimbold, Gilles

    2018-04-01

    To overcome the Fermi-level pinning in III-V metal-oxide-semiconductor capacitors, attention is usually focused on the choice of dielectric and surface chemical treatments prior to oxide deposition. In this work, we examined the influence of the III-V material surface cleaning and the semiconductor growth technique on the electrical properties of metal/Al2O3/In0.53Ga0.47As capacitors grown on InP(100) substrates. By means of the capacitance-voltage measurements, we demonstrated that samples do not have the same total oxide charge density depending on the cleaning solution used [(NH4)2S or NH4OH] prior to oxide deposition. The determination of the interface trap density revealed that a Fermi-level pinning occurs for samples grown by metalorganic chemical vapor deposition but not for similar samples grown by molecular beam epitaxy. Deep level transient spectroscopy analysis explained the Fermi-level pinning by an additional signal for samples grown by metalorganic chemical vapor deposition, attributed to the tunneling effect of carriers trapped in oxide toward interface states. This work emphasizes that the choice of appropriate oxide and cleaning treatment is not enough to prevent a Fermi-level pinning in III-V metal-oxide-semiconductor capacitors. The semiconductor growth technique needs to be taken into account because it impacts the trapping properties of the oxide.

  18. Effect of grain alignment on interface trap density of thermally oxidized aligned-crystalline silicon films

    Science.gov (United States)

    Choi, Woong; Lee, Jung-Kun; Findikoglu, Alp T.

    2006-12-01

    The authors report studies of the effect of grain alignment on interface trap density of thermally oxidized aligned-crystalline silicon (ACSi) films by means of capacitance-voltage (C-V) measurements. C-V curves were measured on metal-oxide-semiconductor (MOS) capacitors fabricated on ⟨001⟩-oriented ACSi films on polycrystalline substrates. From high-frequency C-V curves, the authors calculated a decrease of interface trap density from 2×1012to1×1011cm-2eV-1 as the grain mosaic spread in ACSi films improved from 13.7° to 6.5°. These results demonstrate the effectiveness of grain alignment as a process technique to achieve significantly enhanced performance in small-grained (⩽1μm ) polycrystalline Si MOS-type devices.

  19. Effects of Oxidation on Oxidation-Resistant Graphite

    Energy Technology Data Exchange (ETDEWEB)

    Windes, William [Idaho National Lab. (INL), Idaho Falls, ID (United States); Smith, Rebecca [Idaho National Lab. (INL), Idaho Falls, ID (United States); Carroll, Mark [Idaho National Lab. (INL), Idaho Falls, ID (United States)

    2015-05-01

    The Advanced Reactor Technology (ART) Graphite Research and Development Program is investigating doped nuclear graphite grades that exhibit oxidation resistance through the formation of protective oxides on the surface of the graphite material. In the unlikely event of an oxygen ingress accident, graphite components within the VHTR core region are anticipated to oxidize so long as the oxygen continues to enter the hot core region and the core temperatures remain above 400°C. For the most serious air-ingress accident which persists over several hours or days the continued oxidation can result in significant structural damage to the core. Reducing the oxidation rate of the graphite core material during any air-ingress accident would mitigate the structural effects and keep the core intact. Previous air oxidation testing of nuclear-grade graphite doped with varying levels of boron-carbide (B4C) at a nominal 739°C was conducted for a limited number of doped specimens demonstrating a dramatic reduction in oxidation rate for the boronated graphite grade. This report summarizes the conclusions from this small scoping study by determining the effects of oxidation on the mechanical strength resulting from oxidation of boronated and unboronated graphite to a 10% mass loss level. While the B4C additive did reduce mechanical strength loss during oxidation, adding B4C dopants to a level of 3.5% or more reduced the as-fabricated compressive strength nearly 50%. This effectively minimized any benefits realized from the protective film formed on the boronated grades. Future work to infuse different graphite grades with silicon- and boron-doped material as a post-machining conditioning step for nuclear components is discussed as a potential solution for these challenges in this report.

  20. A Simple, Successful Capacitor Lab

    Science.gov (United States)

    Ennis, William

    2011-01-01

    Capacitors are a fundamental component of modern electronics. They appear in myriad devices and in an enormous range of sizes. Although our students are taught the function and analysis of capacitors, few have the opportunity to use them in our labs.

  1. Protection of large capacitor banks

    International Nuclear Information System (INIS)

    Sprott, J.C.; Lovell, T.W.

    1982-06-01

    Large capacitor banks, as used in many pulsed plasma experiments, are subject to catastrophic failure in the event of a short in the output or in an individual capacitor. Methods are described for protecting such banks to minimize the damage and down-time caused by such a failure

  2. Effect of mass density on surface morphology of electrodeposited manganese oxide films

    Science.gov (United States)

    Singh, Avtar; Kumar, Davinder; Thakur, Anup; Kaur, Raminder

    2018-05-01

    This work focus on high surface area morphology of manganese oxide films which are currently required for electrochemical capacitor electrode to enhance their performance. Electrodeposition of manganese oxide films was carried out using Chronoamperometry for different deposition time ranging from 30 to 120 sec. Cronoamperomertic I-T integrated data have been used to analyze active mass of all electrodeposited films. Morphological study of the deposited films with different mass was carried out through scanning electron microscopy. Film deposited for 30 sec time show highest porous morphology than others. Manganese oxide films with high porosity are suitable for electrochemical capacitor electrode.

  3. Process Optimization of P(VDF-TrFE)-BaTiO3 Nanocomposites for Storage Capacitor Applications

    KAUST Repository

    Almadhoun, Mahmoud N.

    2011-01-01

    are considered to be one possible solution towards the fabrication of high energy density capacitors, whether as embedded capacitors or gate insulators in organic field effect transistors (OFETs). Selecting high permittivity ceramics mixed with polymers with high

  4. Deposition temperature effect on electrical properties and interface of high-k ZrO{sub 2} capacitor

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Joo-Hyung; Ignatova, Velislava A [Fraunhofer Institute, Center of Nanoelectronic Technologies (CNT), Koenigsbruecker Str., 01099 Dresden (Germany); Heitmann, Johannes; Oberbeck, Lars [Qimonda Dresden GmbH and Co. OHG, Koenigsbruecker Str. 180, 01099 Dresden (Germany)], E-mail: joo-hyung.kim@inha.ac.kr

    2008-09-07

    The electrical characteristics, i.e. leakage current and capacitance, of ZrO{sub 2} based metal-insulator-metal structures, grown at 225, 250 and 275 deg, C by atomic layer deposition, were studied. The lowest leakage current was obtained at 250 deg. C deposition temperature, while the highest dielectric constant (k {approx} 43) was measured for the samples grown at 275 {sup 0}C, most probably due to the formation of tetragonal/cubic phases in the ZrO{sub 2} layer. We have shown that the main leakage current of these ZrO{sub 2} capacitors is governed by the Poole-Frenkel conduction mechanism. It was observed by x-ray photoelectron spectroscopy depth profiling that at 275 {sup 0}C deposition temperature the oxygen content at and beyond the ZrO{sub 2}/TiN interface is higher than at lower deposition temperatures, most probably due to oxygen inter-diffusion towards the electrode layer, forming a mixed TiN-TiO{sub x}N{sub y} interface layer. At and above 275 deg. C the ZrO{sub 2} layer changes its structure and becomes crystalline as proven by XRD analysis. (fast track communication)

  5. Fringe Capacitance of a Parallel-Plate Capacitor.

    Science.gov (United States)

    Hale, D. P.

    1978-01-01

    Describes an experiment designed to measure the forces between charged parallel plates, and determines the relationship among the effective electrode area, the measured capacitance values, and the electrode spacing of a parallel plate capacitor. (GA)

  6. Charge Fluctuations in Nanoscale Capacitors

    Science.gov (United States)

    Limmer, David T.; Merlet, Céline; Salanne, Mathieu; Chandler, David; Madden, Paul A.; van Roij, René; Rotenberg, Benjamin

    2013-09-01

    The fluctuations of the charge on an electrode contain information on the microscopic correlations within the adjacent fluid and their effect on the electronic properties of the interface. We investigate these fluctuations using molecular dynamics simulations in a constant-potential ensemble with histogram reweighting techniques. This approach offers, in particular, an efficient, accurate, and physically insightful route to the differential capacitance that is broadly applicable. We demonstrate these methods with three different capacitors: pure water between platinum electrodes and a pure as well as a solvent-based organic electrolyte each between graphite electrodes. The total charge distributions with the pure solvent and solvent-based electrolytes are remarkably Gaussian, while in the pure ionic liquid the total charge distribution displays distinct non-Gaussian features, suggesting significant potential-driven changes in the organization of the interfacial fluid.

  7. Charge fluctuations in nanoscale capacitors.

    Science.gov (United States)

    Limmer, David T; Merlet, Céline; Salanne, Mathieu; Chandler, David; Madden, Paul A; van Roij, René; Rotenberg, Benjamin

    2013-09-06

    The fluctuations of the charge on an electrode contain information on the microscopic correlations within the adjacent fluid and their effect on the electronic properties of the interface. We investigate these fluctuations using molecular dynamics simulations in a constant-potential ensemble with histogram reweighting techniques. This approach offers, in particular, an efficient, accurate, and physically insightful route to the differential capacitance that is broadly applicable. We demonstrate these methods with three different capacitors: pure water between platinum electrodes and a pure as well as a solvent-based organic electrolyte each between graphite electrodes. The total charge distributions with the pure solvent and solvent-based electrolytes are remarkably Gaussian, while in the pure ionic liquid the total charge distribution displays distinct non-Gaussian features, suggesting significant potential-driven changes in the organization of the interfacial fluid.

  8. Comb-Line Filter with Coupling Capacitor in Ground Plane

    Directory of Open Access Journals (Sweden)

    Toshiaki Kitamura

    2011-01-01

    Full Text Available A comb-line filter with a coupling capacitor in the ground plane is proposed. The filter consists of two quarter-wavelength microstrip resonators. A coupling capacitor is inserted into the ground plane in order to build strong coupling locally along the resonators. The filtering characteristics are investigated through numerical simulations as well as experiments. Filtering characteristics that have attenuation poles at both sides of the passband are obtained. The input susceptances of even and odd modes and coupling coefficients are discussed. The filters using stepped impedance resonators (SIRs are also discussed, and the effects of the coupling capacitor for an SIR structure are shown.

  9. Effects of 6 MeV electron irradiation on the electrical properties and device parameters of Al/Al2O3/TiO2/n-Si MOS capacitors

    International Nuclear Information System (INIS)

    Laha, P.; Banerjee, I.; Barhai, P.K.; Das, A.K.; Bhoraskar, V.N.; Mahapatra, S.K.

    2012-01-01

    Highlights: ► The electron irradiation effects make variation in the device parameters. ► The device parameters changes due to percentage of defects and charge trapping. ► Leakage current of Al/Al 2 O 3 /TiO 2 /n-Si changes due to interface dangling bonds. ► The leakage current mechanism of MOS structures is due to Poole–Frenkel effect. - Abstract: The effects of 6 MeV electron irradiation on the electrical properties and device parameter characteristics of Al/Al 2 O 3 /TiO 2 /n-Si metal–oxide–semiconductor capacitors have been studied. Twelve Al/Al 2 O 3 /TiO 2 /n-Si MOS capacitors were fabricated using r.f. magnetron sputtering and divided into four groups. The first group was not irradiated and treated as virgin. The rest were irradiated with 6 MeV electrons at doses 10, 20, and 30 kGy, maintaining the dose rate at ∼1 kGy/min. Variations in crystallinity of the virgin and irradiated capacitors were studied using grazing incident X-ray diffraction. The thickness and in-depth elemental distributions of individual layers were determined using secondary ion mass apectrometry. Capacitance–voltage, conductance–voltage and leakage current–voltage characteristics of the virgin and irradiated samples were studied. The device parameters (flat band voltage, surface charge density and interface trap density of the virgin and irradiated structures) were determined. The electrical properties of the capacitors were investigated and the Poole–Frenkel coefficient of the capacitors was determined from leakage current measurements. The leakage current mechanism has been explained.

  10. Enhanced interfacial and electrical characteristics of 4H-SiC MOS capacitor with lanthanum silicate passivation interlayer

    International Nuclear Information System (INIS)

    Wang, Qian; Cheng, Xinhong; Zheng, Li; Ye, Peiyi; Li, Menglu; Shen, Lingyan; Li, Jingjie; Zhang, Dongliang; Gu, Ziyue; Yu, Yuehui

    2017-01-01

    Highlights: • The 4H-SiC MOS capacitor with an untra-thin LaSiO_x passivation layer and Al_2O_3 gate dielectric was fabricated. • The detrimental SiO_x interfacial layer could be effectively restrained by the LaSiO_x passivation layer. • The passivation mechanism of LaSiO_x was analyzed by HRTEM, XPS and electrical measurements. • The 4H-SiC MOS capacitor with a LaSiO_x passivation layer shows excellent device characteristics. • This technique provides an efficient path to improve dielectrics/4H-SiC interfaces for future high-power device applications. - Abstract: The detrimental sub-oxide (SiO_x) interfacial layer formed during the 4H-SiC metal-oxide-semiconductor (MOS) capacitor fabrication will drastically damage its device performance. In this work, an ultrathin lanthanum silicate (LaSiO_x) passivation layer was introduced to enhance the interfacial and electrical characteristics of 4H-SiC MOS capacitor with Al_2O_3 gate dielectric. The interfacial LaSiO_x formation was investigated by high resolution transmission electron microscopy and X-ray photoelectron spectroscopy. The 4H-SiC MOS capacitor with ultrathin LaSiO_x passivation interlayer shows excellent interfacial and electrical characteristics, including lower leakage current density, higher dielectric breakdown electric field, smaller C–V hysteresis, and lower interface states density and border traps density. The involved mechanism implies that the LaSiO_x passivation interlayer can effectively restrain SiO_x formation and improve the Al_2O_3/4H-SiC interface quality. This technique provides an efficient path to improve dielectrics/4H-SiC interfaces for future high-power device applications.

  11. Graphenated tantalum(IV) oxide and poly(4-styrene sulphonic acid)-doped polyaniline nanocomposite as cathode material in an electrochemical capacitor

    International Nuclear Information System (INIS)

    Njomo, Njagi; Waryo, Tesfaye; Masikini, Milua; Ikpo, Chinwe O.; Mailu, Stephen; Tovide, Oluwakemi; Ross, Natasha; Williams, Avril; Matinise, Nolubabalo; Sunday, Christopher E.; Mayedwa, Noluthando; Baker, Priscilla G.L.; Ozoemena, Kenneth I.; Iwuoha, Emmanuel I.

    2014-01-01

    Nanostructured poly(4-styrene sulphonic acid) and tantalum (IV) oxide-doped polyaniline nanocomposite were synthesised and their electro-conductive properties were determined. The oxide was synthesized using a modified sol-gel method and then dispersed in acidic media through sonication and entrapped in-situ into the polymeric matrix during the oxidative chemical polymerization of aniline doped with poly(4-styrene sulphonic acid). The oxides and novel polymeric nanocomposite were characterised with TEM, SEM, EDX, XRD, FTIR, UV-visible to ascertain elemental and phase composition, successful polymerization, doping, morphology and entrapment of the metal oxide nanoparticles. The electro-conductivity of the nanomaterial was interrogated using scanning electrochemical microscopy (SECM) and cyclic voltammetry (CV). The material was then anchored on activated graphitic carbon and used in the design of an asymmetric supercapacitor cell using 6 M KOH aqueous electrolyte. Characteristically high specific capacitance values of 318.4 F/g with a corresponding energy and power densities of 1.57 kWh/kg and 0.435 kW/kg, respectively, were demonstrated. The cell also showed high coulombic efficiency of 94.9% with a long cycle life and good cycle stability making the nanomaterial suitable for constructing supercapacitor cell electrodes

  12. Split-phase motor running as capacitor starts motor and as capacitor run motor

    Directory of Open Access Journals (Sweden)

    Yahaya Asizehi ENESI

    2016-07-01

    Full Text Available In this paper, the input parameters of a single phase split-phase induction motor is taken to investigate and to study the output performance characteristics of capacitor start and capacitor run induction motor. The value of these input parameters are used in the design characteristics of capacitor run and capacitor start motor with each motor connected to rated or standard capacitor in series with auxiliary winding or starting winding respectively for the normal operational condition. The magnitude of capacitor that will develop maximum torque in capacitor start motor and capacitor run motor are investigated and determined by simulation. Each of these capacitors is connected to the auxiliary winding of split-phase motor thereby transforming it into capacitor start or capacitor run motor. The starting current and starting torque of the split-phase motor (SPM, capacitor run motor (CRM and capacitor star motor (CSM are compared for their suitability in their operational performance and applications.

  13. Effect of atomic layer deposition temperature on current conduction in Al{sub 2}O{sub 3} films formed using H{sub 2}O oxidant

    Energy Technology Data Exchange (ETDEWEB)

    Hiraiwa, Atsushi, E-mail: hiraiwa@aoni.waseda.jp, E-mail: qs4a-hriw@asahi-net.or.jp [Research Organization for Nano and Life Innovation, Waseda University, 513 Waseda-Tsurumaki, Shinjuku, Tokyo 162-0041 (Japan); Matsumura, Daisuke [Faculty of Science and Engineering, Waseda University, 3-4-1 Okubo, Shinjuku, Tokyo 169-8555 (Japan); Kawarada, Hiroshi, E-mail: kawarada@waseda.jp [Research Organization for Nano and Life Innovation, Waseda University, 513 Waseda-Tsurumaki, Shinjuku, Tokyo 162-0041 (Japan); Faculty of Science and Engineering, Waseda University, 3-4-1 Okubo, Shinjuku, Tokyo 169-8555 (Japan); The Kagami Memorial Laboratory for Materials Science and Technology, Waseda University, 2-8-26 Nishiwaseda, Shinjuku, Tokyo 169-0051 (Japan)

    2016-08-28

    To develop high-performance, high-reliability gate insulation and surface passivation technologies for wide-bandgap semiconductor devices, the effect of atomic layer deposition (ALD) temperature on current conduction in Al{sub 2}O{sub 3} films is investigated based on the recently proposed space-charge-controlled field emission model. Leakage current measurement shows that Al{sub 2}O{sub 3} metal-insulator-semiconductor capacitors formed on the Si substrates underperform thermally grown SiO{sub 2} capacitors at the same average field. However, using equivalent oxide field as a more practical measure, the Al{sub 2}O{sub 3} capacitors are found to outperform the SiO{sub 2} capacitors in the cases where the capacitors are negatively biased and the gate material is adequately selected to reduce virtual dipoles at the gate/Al{sub 2}O{sub 3} interface. The Al{sub 2}O{sub 3} electron affinity increases with the increasing ALD temperature, but the gate-side virtual dipoles are not affected. Therefore, the leakage current of negatively biased Al{sub 2}O{sub 3} capacitors is approximately independent of the ALD temperature because of the compensation of the opposite effects of increased electron affinity and permittivity in Al{sub 2}O{sub 3}. By contrast, the substrate-side sheet of charge increases with increasing ALD temperature above 210 °C and hence enhances the current of positively biased Al{sub 2}O{sub 3} capacitors more significantly at high temperatures. Additionally, an anomalous oscillatory shift of the current-voltage characteristics with ALD temperature was observed in positively biased capacitors formed by low-temperature (≤210 °C) ALD. This shift is caused by dipoles at the Al{sub 2}O{sub 3}/underlying SiO{sub 2} interface. Although they have a minimal positive-bias leakage current, the low-temperature-grown Al{sub 2}O{sub 3} films cause the so-called blisters problem when heated above 400 °C. Therefore, because of the absence of blistering, a 450

  14. Fractal Structures For Mems Variable Capacitors

    KAUST Repository

    Elshurafa, Amro M.

    2014-08-28

    In accordance with the present disclosure, one embodiment of a fractal variable capacitor comprises a capacitor body in a microelectromechanical system (MEMS) structure, wherein the capacitor body has an upper first metal plate with a fractal shape separated by a vertical distance from a lower first metal plate with a complementary fractal shape; and a substrate above which the capacitor body is suspended.

  15. Polyvinylidene fluoride film as a capacitor dielectric

    Science.gov (United States)

    Dematos, H. V.

    1981-01-01

    Thin strips of polyvinylidene fluoride film (PVDF) with vacuum deposited electrodes were made into capacitors by conventional winding and fabrication techniques. These devices were used to identify and evaluate the performance characteristics offered by the PVDF in metallized film capacitors. Variations in capacitor parameters with temperature and frequence were evaluated and compared with other dielectric films. Their impact on capacitor applications is discussed.

  16. Fractal Structures For Fixed Mems Capacitors

    KAUST Repository

    Elshurafa, Amro M.

    2014-08-28

    An embodiment of a fractal fixed capacitor comprises a capacitor body in a microelectromechanical system (MEMS) structure. The capacitor body has a first plate with a fractal shape separated by a horizontal distance from a second plate with a fractal shape. The first plate and the second plate are within the same plane. Such a fractal fixed capacitor further comprises a substrate above which the capacitor body is positioned.

  17. Fractal Structures For Fixed Mems Capacitors

    KAUST Repository

    Elshurafa, Amro M.; Radwan, Ahmed Gomaa Ahmed; Emira, Ahmed A.; Salama, Khaled N.

    2014-01-01

    An embodiment of a fractal fixed capacitor comprises a capacitor body in a microelectromechanical system (MEMS) structure. The capacitor body has a first plate with a fractal shape separated by a horizontal distance from a second plate with a fractal shape. The first plate and the second plate are within the same plane. Such a fractal fixed capacitor further comprises a substrate above which the capacitor body is positioned.

  18. Characteristics of Au/PZT/TiO2/Nitride/Si structure capacitors with ICP nitride treatments

    International Nuclear Information System (INIS)

    Min, Hyung Seob; Kim, Tae Ho; Jeon, Chang Bae; Lee, Jae Gab; Kim, Ji Young

    2002-01-01

    In this study, the characteristics of PZT/TiO 2 ferroelectric gate stack capacitors with Inductively Coupled Plasma (ICP) nitridation were investigated for field effect transistor (FET)-type Ferroelectric Random Access Memory (FeRAM) applications. If a high accumulation capacitance is to be had, the ICP nitridation time needs to be optimized. While a short ICP treatment time results in thermal oxide growth due to lack of nitrogen, a long nitridation time causes a nitride layer which is too thick. Au/PZT(200 nm)/TiO 2 (40 nm)/Nitride/Si (MeFINS) structure capacitors show a memory window (ΔV) of 1.6 V under ±3-V operation while Au/PZT(200 nm)/TiO 2 (40 nm)/Si (MeFIS) capacitors without nitride treatment exhibit a small memory window of 0.6 V. At the same time, the capacitance of the MeFINS device is almost twice that of the MeFIS capacitor. This result implies that the ICP nitride treatment suppresses the formation of a low dielectric constant interfacial SiO x layer and alleviates the series capacitance problem

  19. Mutual capacitor and its applications

    Directory of Open Access Journals (Sweden)

    Chun Li

    2014-06-01

    Full Text Available This study presents a new ac circuit element – the mutual capacitor, being a dual of the mutual inductor, which is also a new ac transformer. This element is characteristic of the mutual-capacitance coupling of a multi-capacitance system. A unity-coupled mutual capacitor works as an ideal current or voltage transformer, and incidentally acts as waveform separating when inductor employed or waveform converting from square-wave to quasi-sine or waveform filtering, between ports. As a transformer, the mutual capacitor is easy to design, easy for heat cooling, more accurate for current or voltage transformation, dissipating less energy as well as saving materials, suitable for high-power and high-voltage applications. Experiments to demonstrate performances of unity-coupled mutual capacitors are also given.

  20. High density energy storage capacitor

    International Nuclear Information System (INIS)

    Whitham, K.; Howland, M.M.; Hutzler, J.R.

    1979-01-01

    The Nova laser system will use 130 MJ of capacitive energy storage and have a peak power capability of 250,000 MW. This capacitor bank is a significant portion of the laser cost and requires a large portion of the physical facilities. In order to reduce the cost and volume required by the bank, the Laser Fusion Program funded contracts with three energy storage capacitor producers: Aerovox, G.E., and Maxwell Laboratories, to develop higher energy density, lower cost energy storage capacitors. This paper describes the designs which resulted from the Aerovox development contract, and specifically addresses the design and initial life testing of a 12.5 kJ, 22 kV capacitor with a density of 4.2 J/in 3 and a projected cost in the range of 5 cents per joule

  1. PLZT capacitor on glass substrate

    Science.gov (United States)

    Fairchild, M. Ray; Taylor, Ralph S.; Berlin, Carl W.; Wong, Celine W. K.; Ma, Beihai; Balachandran, Uthamalingam

    2016-01-05

    A lead-lanthanum-zirconium-titanate (PLZT) capacitor on a substrate formed of glass. The first metallization layer is deposited on a top side of the substrate to form a first electrode. The dielectric layer of PLZT is deposited over the first metallization layer. The second metallization layer deposited over the dielectric layer to form a second electrode. The glass substrate is advantageous as glass is compatible with an annealing process used to form the capacitor.

  2. Physics Based Modeling and Prognostics of Electrolytic Capacitors

    Science.gov (United States)

    Kulkarni, Chetan; Ceyla, Jose R.; Biswas, Gautam; Goebel, Kai

    2012-01-01

    This paper proposes first principles based modeling and prognostics approach for electrolytic capacitors. Electrolytic capacitors have become critical components in electronics systems in aeronautics and other domains. Degradations and faults in DC-DC converter unit propagates to the GPS and navigation subsystems and affects the overall solution. Capacitors and MOSFETs are the two major components, which cause degradations and failures in DC-DC converters. This type of capacitors are known for its low reliability and frequent breakdown on critical systems like power supplies of avionics equipment and electrical drivers of electromechanical actuators of control surfaces. Some of the more prevalent fault effects, such as a ripple voltage surge at the power supply output can cause glitches in the GPS position and velocity output, and this, in turn, if not corrected will propagate and distort the navigation solution. In this work, we study the effects of accelerated aging due to thermal stress on different sets of capacitors under different conditions. Our focus is on deriving first principles degradation models for thermal stress conditions. Data collected from simultaneous experiments are used to validate the desired models. Our overall goal is to derive accurate models of capacitor degradation, and use them to predict performance changes in DC-DC converters.

  3. Effect of combined external uniaxial stress and dc bias on the dielectric property of BaTiO3-based dielectrics in multilayer ceramic capacitor: thermodynamics and experiments

    International Nuclear Information System (INIS)

    Yang Gang; Yue Zhenxing; Sun Tieyu; Gou Huanlin; Li Longtu

    2008-01-01

    The dielectric properties of (Nb, Y)-doped BaTiO 3 in a multilayer ceramic capacitor (MLCC) under combined external uniaxial compressive stress and dc bias field were investigated at room temperature by using a modified Ginsburg-Landau-Devonshire thermodynamic theory and the dielectric measurement. It is found that although dc bias decreases the dielectric properties dominantly, the influence of the external uniaixial compressive stress should not be neglected. When applied along a direction perpendicular to the internal electrode layer in the MLCC, the external uniaixal compressive stress will strengthen the negative effect of dc bias. In contrast, the external uniaxial compressive stress along a direction parallel to the internal electrode layer in the MLCC will increase the dielectric permittivity under dc bias field, i.e. improve the ε-V response of the MLCC. Furthermore, although there is a difference between the calculated permittivity and the measured permittivity, the effects of the combined external uniaxial compressive stress and dc bias field on the dielectric permittivity described through two approaches are in good agreement

  4. Protective effect of nitric oxide against arsenic-induced oxidative ...

    African Journals Online (AJOL)

    The effects of NO on alleviating arsenic-induced oxidative damage in tall fescue leaves were investigated. Arsenic (25 M) treatment induced significantly accumulation of reactive oxygen species (ROS) and led to serious lipid peroxidation in tall fescue leaves and the application of 100 M SNP before arsenic stress resulted ...

  5. Application of proton conducting polymeric electrolytes to electrochemical capacitors

    International Nuclear Information System (INIS)

    Morita, Masayuki; Qiao, Jin-Li; Yoshimoto, Nobuko; Ishikawa, Masashi

    2004-01-01

    Non-aqueous polymeric gel complexes composed of poly(ethylene oxide)-modified polymethacrylate (PEO-PMA) dissolving anhydrous H 3 PO 4 have been examined as solid electrolytes of electrochemical capacitors. High ionic conductivity of ∼10 -3 S cm -1 (at 70 deg. C) was obtained for non-aqueous gel systems based on PEO-PMA with proper amounts of organic plasticizers. The ionic conductivity depended on the composition of the gel, especially on the content of the dopant H 3 PO 4 . A test cell of the electric double layer capacitor (EDLC) was assembled using the present gel electrolyte with activated carbon fiber (ACF) cloth electrodes. It gave as high capacity as that obtained for the capacitor using an aqueous liquid electrolyte. High rate capability was obtained for the cell operating at 90 deg. C

  6. Fe3O4/carbon hybrid nanoparticle electrodes for high-capacity electrochemical capacitors.

    Science.gov (United States)

    Lee, Jun Seop; Shin, Dong Hoon; Jun, Jaemoon; Lee, Choonghyeon; Jang, Jyongsik

    2014-06-01

    Fe3O4/carbon hybrid nanoparticles (FeCHNPs) were fabricated using dual-nozzle electrospraying, vapor deposition polymerization (VDP), and carbonization. FeOOH nanoneedles decorated with polypyrrole (PPy) nanoparticles (FePNPs) were fabricated by electrospraying pristine PPy mixed with FeCl3 solution, followed by heating stirring reaction. A PPy coating was then formed on the FeOOH nanoneedles through a VDP process. FeCHNPs were produced through carbonization of PPy and FeOOH phase transitions. These hybrid carbon nanoparticles (NPs) were used to build electrodes of electrochemical capacitors. The specific capacitance of the FeCHNPs was 455 F g(-1), which is larger than that of pristine PPy NPs (105 F g(-1)) or other hybrid PPy NPs. Furthermore, the FeCHNP-based capacitors exhibited better cycle stability during charge-discharge cycling than other hybrid NP capacitors. This is because the carbon layer on the Fe3 O4 surface formed a protective coating, preventing damage to the electrode materials during the charge-discharge processes. This fabrication technique is an effective approach for forming stable carbon/metal oxide nanostructures for energy storage applications. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  7. Hybrid lithium-ion capacitor with LiFePO4/AC composite cathode - Long term cycle life study, rate effect and charge sharing analysis

    Science.gov (United States)

    Shellikeri, A.; Yturriaga, S.; Zheng, J. S.; Cao, W.; Hagen, M.; Read, J. A.; Jow, T. R.; Zheng, J. P.

    2018-07-01

    Energy storage devices, which can combine the advantages of lithium-ion battery with that of electric double layer capacitor, are of prime interest. Recently, composite cathodes, which combine a battery material with capacitor material, have shown promise in enhancing life cycle and energy/power performances. Lithium-ion capacitor (LIC), with unique charge storage mechanism of combining a pre-lithiated battery anode with a capacitor cathode, is one such device which has the potential to synergistically incorporate the composite cathode to enhance capacity and cycle life. We report here a hybrid LIC consisting of a lithium iron phosphate (LiFePO4-LFP)/Activated Carbon composite cathode in combination with a hard carbon anode, by integrating the cycle life and capacity enhancing strategies of a dry method of electrode fabrication, anode pre-lithiation and a 3:1 anode to cathode capacity ratio, demonstrating a long cycle life, while elaborating on the charge sharing between the faradaic and non-faradaic mechanism in the battery and capacitor materials, respectively in the composite cathode. An excellent cell capacity retention of 94% (1000 cycles at 1C) and 92% (100,000 cycles at 60C) were demonstrated, while retaining 78% (over 6000 cycles at 2.7C) and 67% (over 70,000 cycles at 43C) of the LFP capacity in the composite cathode.

  8. Atomic Layer Deposition Alumina-Passivated Silicon Nanowires: Probing the Transition from Electrochemical Double-Layer Capacitor to Electrolytic Capacitor.

    Science.gov (United States)

    Gaboriau, Dorian; Boniface, Maxime; Valero, Anthony; Aldakov, Dmitry; Brousse, Thierry; Gentile, Pascal; Sadki, Said

    2017-04-19

    Silicon nanowires were coated by a 1-5 nm thin alumina layer by atomic layer deposition (ALD) in order to replace poorly reproducible and unstable native silicon oxide by a highly conformal passivating alumina layer. The surface coating enabled probing the behavior of symmetric devices using such electrodes in the EMI-TFSI electrolyte, allowing us to attain a large cell voltage up to 6 V in ionic liquid, together with very high cyclability with less than 4% capacitance fade after 10 6 charge/discharge cycles. These results yielded fruitful insights into the transition between an electrochemical double-layer capacitor behavior and an electrolytic capacitor behavior. Ultimately, thin ALD dielectric coatings can be used to obtain hybrid devices exhibiting large cell voltage and excellent cycle life of dielectric capacitors, while retaining energy and power densities close to the ones displayed by supercapacitors.

  9. Multiple Interfacial Fe3O4@BaTiO3/P(VDF-HFP) Core-Shell-Matrix Films with Internal Barrier Layer Capacitor (IBLC) Effects and High Energy Storage Density.

    Science.gov (United States)

    Zhou, Ling; Fu, Qiuyun; Xue, Fei; Tang, Xiahui; Zhou, Dongxiang; Tian, Yahui; Wang, Geng; Wang, Chaohong; Gou, Haibo; Xu, Lei

    2017-11-22

    Flexible nanocomposites composed of high dielectric constant fillers and polymer matrix have shown great potential for electrostatic capacitors and energy storage applications. To obtain the composited material with high dielectric constant and high breakdown strength, multi-interfacial composited particles, which composed of conductive cores and insulating shells and possessed the internal barrier layer capacitor (IBLC) effect, were adopted as fillers. Thus, Fe 3 O 4 @BaTiO 3 core-shell particles were prepared and loaded into the poly(vinylidene fluoride-co-hexafluoropropylene) (P(VDF-HFP)) polymer matrix. As the mass fraction of core-shell fillers increased from 2.5 wt % to 30 wt %, the dielectric constant of the films increased, while the loss tangent remained at a low level (capacitor model was also adopted to interpret the efficiency of IBLC effects on the suppressed loss tangent and the superior breakdown strength. This work explored an effective approach to prepare dielectric nanocomposites for energy storage applications experimentally and theoretically.

  10. A green and efficient method to produce graphene for electrochemical capacitors from graphene oxide using sodium carbonate as a reducing agent

    Science.gov (United States)

    Jin, Yuhong; Huang, Shuo; Zhang, Mei; Jia, Mengqiu; Hu, Dong

    2013-03-01

    The green and efficient synthesis of graphene using sodium carbonate (Na2CO3) as a chemical reducing agent was studied. Extensive characterization confirmed the formation of graphene from graphene oxide using a Na2CO3 solution. The C/O atomic ratio of the as-prepared graphene has increased from 2.48 to 8.15 after reduction as determined by X-ray photoelectron spectroscopy. The conductivity of as-prepared graphene sheets is as high as 10 S m-1. After electrochemical measurements, gravimetric capacitances of 228 and 166 F g-1 at current densities of 5 and 25 mA cm-2, respectively, were obtained with KOH electrolyte.

  11. Catechol-chitosan redox capacitor for added amplification in electrochemical immunoanalysis.

    Science.gov (United States)

    Yan, Kun; Liu, Yi; Guan, Yongguang; Bhokisham, Narendranath; Tsao, Chen-Yu; Kim, Eunkyoung; Shi, Xiao-Wen; Wang, Qin; Bentley, William E; Payne, Gregory F

    2018-05-22

    Antibodies are common recognition elements for molecular detection but often the signals generated by their stoichiometric binding must be amplified to enhance sensitivity. Here, we report that an electrode coated with a catechol-chitosan redox capacitor can amplify the electrochemical signal generated from an alkaline phosphatase (AP) linked immunoassay. Specifically, the AP product p-aminophenol (PAP) undergoes redox-cycling in the redox capacitor to generate amplified oxidation currents. We estimate an 8-fold amplification associated with this redox-cycling in the capacitor (compared to detection by a bare electrode). Importantly, this capacitor-based amplification is generic and can be coupled to existing amplification approaches based on enzyme-linked catalysis or magnetic nanoparticle-based collection/concentration. Thus, the capacitor should enhance sensitivities in conventional immunoassays and also provide chemical to electrical signal transduction for emerging applications in molecular communication. Copyright © 2018 Elsevier B.V. All rights reserved.

  12. Investigation on Capacitor Switching Transient Limiter with a Three phase Variable Resistance

    DEFF Research Database (Denmark)

    Naderi, Seyed Behzad; Jafari, Mehdi; Zandnia, Amir

    2017-01-01

    In this paper, a capacitor switching transient limiter based on a three phase variable resistance is proposed. The proposed structure eliminates the capacitor switching transient current and over-voltage by introducing a variable resistance to the current path with its special switching pattern...... transients on capacitor after bypassing. Analytic Analyses for this structure in transient cases are presented in details and simulations are performed by MATLAB software to prove its effectiveness....

  13. Incorporation of distributed generation and shunt capacitor in radial distribution system for techno-economic benefits

    Directory of Open Access Journals (Sweden)

    Mukul Dixit

    2017-04-01

    The various costs such as purchase active power from grid, DG installation, capacitor installation, DG Operation and Maintenance (O&M are evaluated at two different load scenarios. In addition to that, technical and economical analyses are examined for various combinations of DGs and shunt capacitors. The proposed methodology is successfully demonstrated on 33-bus and 85-bus radial networks and the obtained numerical outcomes validate the suitability, importance and effectiveness to identify locations as well as sizes of DGs and shunt capacitors.

  14. Improving the electrical properties of lanthanum silicate films on ge metal oxide semiconductor capacitors by adopting interfacial barrier and capping layers.

    Science.gov (United States)

    Choi, Yu Jin; Lim, Hajin; Lee, Suhyeong; Suh, Sungin; Kim, Joon Rae; Jung, Hyung-Suk; Park, Sanghyun; Lee, Jong Ho; Kim, Seong Gyeong; Hwang, Cheol Seong; Kim, HyeongJoon

    2014-05-28

    The electrical properties of La-silicate films grown by atomic layer deposition (ALD) on Ge substrates with different film configurations, such as various Si concentrations, Al2O3 interfacial passivation layers, and SiO2 capping layers, were examined. La-silicate thin films were deposited using alternating injections of the La[N{Si(CH3)3}2]3 precursor with O3 as the La and O precursors, respectively, at a substrate temperature of 310 °C. The Si concentration in the La-silicate films was further controlled by adding ALD cycles of SiO2. For comparison, La2O3 films were also grown using [La((i)PrCp)3] and O3 as the La precursor and oxygen source, respectively, at the identical substrate temperature. The capacitance-voltage (C-V) hysteresis decreased with an increasing Si concentration in the La-silicate films, although the films showed a slight increase in the capacitance equivalent oxide thickness. The adoption of Al2O3 at the interface as a passivation layer resulted in lower C-V hysteresis and a low leakage current density. The C-V hysteresis voltages of the La-silicate films with Al2O3 passivation and SiO2 capping layers was significantly decreased to ∼0.1 V, whereas the single layer La-silicate film showed a hysteresis voltage as large as ∼1.0 V.

  15. Electromechanical capacitor for energy transfer

    International Nuclear Information System (INIS)

    Carroll, T.A.; Chowdhuri, P.; Marshall, J.

    1983-01-01

    Inductive energy transfer between two magnets can be achieved with almost 100% efficiency with a transfer capacitor. However, the bulk and cost will be high, and reliability low if conventional capacitors are used. A homopolar machine, used as a capacitor, will be compact and economical. A homopolar machine was designed with counter-rotating copper disks completely immersed in a liquid metal (NaK-78) to work as a pulse capacitor. Absence of solid-brush collectors minimized wear and frictional losses. Wetting of the copper disks throughout the periphery by the liquid metal minimized the resistive losses at the collector interface. A liquid-metal collector would, however, introduce hydrodynamic and magnetohydrodynamic losses. The selected liquid metal, e.g., NaK-78 will produce the lowest of such losses among the available liquid metals. An electromechanical capacitor of this design was tested at various dc magnetic fields. Its measured capacitance was about 100 farads at a dc magnetic field of 1.15 tesla

  16. Evaluation of gamma radiation response of electrolyte, MKP and MKT capacitors in various frequencies

    International Nuclear Information System (INIS)

    Malekie, Shahryar; Salehpour, Behrooz

    2017-01-01

    In this experimental work, the effect of gamma irradiation on the capacitance and impedance of some commercial capacitors namely electrolytic, MKP, and MKT capacitors in different radiation doses up to 120 kGy and a wide range of frequencies between 42 Hz and 5 MHz were studied. Results showed that the capacitances of the electrolytic capacitors exhibited a linear decrease by increasing the radiation dose and frequencies, which can be used for high dosimetry purposes, but non-ceramic capacitors as MKP and MKT showed much higher radiation resistance, particularly for the frequencies less than ∝1 MHz.

  17. Evaluation of gamma radiation response of electrolyte, MKP and MKT capacitors in various frequencies

    Energy Technology Data Exchange (ETDEWEB)

    Malekie, Shahryar [Nuclear Science and Technology Research Institute, Karaj (Iran, Islamic Republic of). Radiation Application Research School; Salehpour, Behrooz [Tabriz Univ. (Iran, Islamic Republic of). Faculty of Physics

    2017-09-01

    In this experimental work, the effect of gamma irradiation on the capacitance and impedance of some commercial capacitors namely electrolytic, MKP, and MKT capacitors in different radiation doses up to 120 kGy and a wide range of frequencies between 42 Hz and 5 MHz were studied. Results showed that the capacitances of the electrolytic capacitors exhibited a linear decrease by increasing the radiation dose and frequencies, which can be used for high dosimetry purposes, but non-ceramic capacitors as MKP and MKT showed much higher radiation resistance, particularly for the frequencies less than ∝1 MHz.

  18. Graphene oxide-MnO2 nanocomposite for supercapacitor application

    Science.gov (United States)

    Muhammed Shafi, P.; Vishal, Jose K.; Chandra Bose, A.

    2016-09-01

    Increased depletion of fossil fuels along with global warming and climate change made the society to think about alternate green and sustainable energy sources and better energy storage devices. Extensive research has been performed on the development of solar cells, fuel cells, Lithium- ion battery and supercapacitors to combat the green house effect and its consequences, and to meet the increased energy crisis. Supercapacitors, also known as electrochemical capacitors are gained a great attention because of their pulse power supply, long cycle life (>100,000), simple principle and high dynamic of charge propagation. Its greater power density than lithium- ion battery and much larger energy density than conventional capacitors brought super capacitors to a promising energy storage device to meet the increased energy demands. Here we demonstrate supercapacitor electrode materials with graphene oxide (electric double layer capacitor) and α-MnO2 nanomaterial (pseudo-capacitor), as well as composite of these materials, which means that the bulk of the material undergoes a fast redox reaction to provide the capacitive response and they exhibit superior specific energies in addition to the carbon-based supercapacitors (double-layer capacitors). A simple soft chemical route is utilized to synthesize graphene oxide, α-MnO2 and graphene oxide-MnO2 composite. The phase and the structure of the synthesized materials are studied using X-ray diffractometry (XRD). The functional group and the presence of impurities are understood from Fourier transform infrared (FTIR) spectra. The capacitive properties of the graphene oxide, graphene oxide - MnO2 nanocomposite and α-MnO2 are tested with the help of cyclic voltammetry (CV) and galvanostatic charge - discharge techniques using 1 M Na2SO4 in aqueous solution as electrolyte. It was found that graphene oxide - MnO2 nanocomposite shows better electrochemical behaviour compared to individual graphene oxide and α-MnO2 nanomaterial.

  19. Shapeable short circuit resistant capacitor

    Science.gov (United States)

    Taylor, Ralph S.; Myers, John D.; Baney, William J.

    2015-10-06

    A ceramic short circuit resistant capacitor that is bendable and/or shapeable to provide a multiple layer capacitor that is extremely compact and amenable to desirable geometries. The capacitor that exhibits a benign failure mode in which a multitude of discrete failure events result in a gradual loss of capacitance. Each event is a localized event in which localized heating causes an adjacent portion of one or both of the electrodes to vaporize, physically cleaning away electrode material from the failure site. A first metal electrode, a second metal electrode, and a ceramic dielectric layer between the electrodes are thin enough to be formed in a serpentine-arrangement with gaps between the first electrode and the second electrode that allow venting of vaporized electrode material in the event of a benign failure.

  20. Structural integrity of ceramic multilayer capacitor materials and ceramic multilayer capacitors

    NARCIS (Netherlands)

    With, de G.

    1993-01-01

    An review with 61 refs. is given of the fracture of and stress situation in ceramic capacitor materials and ceramic multilayer capacitors. A brief introduction to the relevant concepts is given first. Next the data for capacitor materials and the data for capacitors are discussed. The materials data

  1. Super miniaturization of film capacitor dielectrics

    Science.gov (United States)

    Lavene, B.

    1981-01-01

    The alignment of the stable electrical characteristics of film capacitors in the physical dimensions of ceramic and tantalum capacitors are discussed. The reliability of polycarbonate and mylar capacitors are described with respect to their compatibility with military specifications. Graphic illustrations are presented which show electrical and physical comparisons of film, ceramic, and tantalum capacitors. The major focus is on volumetric efficiency, weight reduction, and electrical stability.

  2. Neural network for optimal capacitor placement and its impact on power quality in electric distribution systems

    International Nuclear Information System (INIS)

    Mohamed, A.A.E.S.

    2013-01-01

    Capacitors are widely installed in distribution systems for reactive power compensation to achieve power and energy loss reduction, voltage regulation and system capacity release. The extent of these benefits depends greatly on how the capacitors are placed on the system. The problem of how to place capacitors on the system such that these benefits are achieved and maximized against the cost associated with the capacitor placement is termed the general capacitor placement problem. The capacitor placement problem has been formulated as the maximization of the savings resulted from reduction in both peak power and energy losses considering capacitor installation cost and maintaining the buses voltage within acceptable limits. After an appropriate analysis, the optimization problem was formulated in a quadratic form. For solving capacitor placement a new combinatorial heuristic and quadratic programming technique has been presented and applied in the MATLAB software. The proposed strategy was applied on two different radial distribution feeders. The results have been compared with previous works. The comparison showed the validity and the effectiveness of this strategy. Secondly, two artificial intelligence techniques for predicting the capacitor switching state in radial distribution feeders have been investigated; one is based on basis Radial Basis Neural Network (RBNN) and the other is based on Adaptive Neuro-Fuzzy Inference System (ANFIS). The ANFIS technique gives better results with a minimum total error compared to RBNN. The learning duration of ANFIS was very short than the neural network case. It implied that ANFIS reaches to the target faster than neural network. Thirdly, an artificial intelligence (RBNN) approach for estimation of transient overvoltage during capacitor switching has been studied. The artificial intelligence approach estimated the transient overvoltages with a minimum error in a short computational time. Finally, a capacitor switching

  3. Integrated capacitor arrangement for ultrahigh capacitance values

    NARCIS (Netherlands)

    Roozeboom, F.; Klootwijk, J.H.; Kemmeren, A.L.A.M.; Reefman, D.; Verhoeven, J.F.C.M.

    2011-01-01

    An electronic device includes at least one trench capacitor that can also take the form of an inverse structure, a pillar capacitor. An alternating layer sequence of at least two dielectric layers and at least two electrically conductive layers is provided in the trench capacitor or on the pillar

  4. Electrical characterization of thin film ferroelectric capacitors

    NARCIS (Netherlands)

    Tiggelman, M.P.J.; Reimann, K.; Klee, M.; Beelen, D.; Keur, W.; Schmitz, Jurriaan; Hueting, Raymond Josephus Engelbart

    2006-01-01

    Tunable capacitors can be used to facilitate the reduction of components in wireless technologies. The tunability of the capacitors is caused by the sensitivity of the relative dielectric constant to a change in polarization with electric field. Thin film ferroelectric MIM capacitors on silicon

  5. Effect of exercise training on leucine oxidation

    International Nuclear Information System (INIS)

    Hendrix, M.K.; Layman, D.K.

    1986-01-01

    Oxidation of the BCAA leucine is increased during a bout of exhaustive exercise. The purpose of this study was to determine the effects of exercise training on leu oxidation during aerobic exercise. Female Sprague-Dawley rats were fed a commercial diet ad lib and divided into sedentary and two trained groups. Animals were trained to run on a treadmill with a 10 0 incline at 28 m/min for 5 wks for either 50 or 120 min/day. There were no differences in food intake or body weight. After a 12 hr fast, animals were run for 50 or 120 min and changes in leu catabolism determined by measurement of in vivo leu oxidation and activity of branched chain keto acid dehydrogenase (BCKAD). For measurement of leu oxidation, rats were injected IP with 4 μCi 1- 14 C-leu during the last 15 min of exercise, placed in glass metabolic chambers, and 14 CO 2 collected in 1 N NaOH for 30 min periods. Leu oxidation was increased by 40% after 50 min of exercise and by 79% after 120 min of exercise. Five weeks of training reduced the rate of leu oxidation during an exercise bout. The activity of the BCKAD was not increased in the trained animals after either 50 or 120 min of exercise. These data indicate that the rate of leu oxidation during exercises is dependent on the duration of the exercise and that training will reduce the magnitude of this effect

  6. Split-phase motor running as capacitor starts motor and as capacitor run motor

    OpenAIRE

    Yahaya Asizehi ENESI; Jacob TSADO; Mark NWOHU; Usman Abraham USMAN; Odu Ayo IMORU

    2016-01-01

    In this paper, the input parameters of a single phase split-phase induction motor is taken to investigate and to study the output performance characteristics of capacitor start and capacitor run induction motor. The value of these input parameters are used in the design characteristics of capacitor run and capacitor start motor with each motor connected to rated or standard capacitor in series with auxiliary winding or starting winding respectively for the normal operational condition. The ma...

  7. Improved Dielectric Films For Capacitors

    Science.gov (United States)

    Yen, Shiao-Ping S.; Lewis, Carol R.; Cygan, Peter J.; Jow, T. Richard

    1994-01-01

    Dielectric films made from blends of some commercially available high-dielectric-constant cyanoresins with each other and with cellulose triacetate (CTA) have both high dielectric constants and high breakdown strengths. Dielectric constants as high as 16.2. Films used to produce high-energy-density capacitors.

  8. Compositionally Graded Multilayer Ceramic Capacitors.

    Science.gov (United States)

    Song, Hyun-Cheol; Zhou, Jie E; Maurya, Deepam; Yan, Yongke; Wang, Yu U; Priya, Shashank

    2017-09-27

    Multilayer ceramic capacitors (MLCC) are widely used in consumer electronics. Here, we provide a transformative method for achieving high dielectric response and tunability over a wide temperature range through design of compositionally graded multilayer (CGML) architecture. Compositionally graded MLCCs were found to exhibit enhanced dielectric tunability (70%) along with small dielectric losses (filters and power converters.

  9. Ion beam sputter deposited TiAlN films for metal-insulator-metal (Ba,Sr)TiO{sub 3} capacitor application

    Energy Technology Data Exchange (ETDEWEB)

    Lee, S.-Y. [Department of Materials Science and Engineering, National Cheng Kung University, No. 1, Ta-Hsueh Road, Tainan, Taiwan (China); Wang, S.-C. [Department of Mechanical Engineering, Southern Taiwan University of Technology, No. 1, Nantai St, Yung-Kang City, Tainan, Taiwan (China); Chen, J.-S. [Department of Materials Science and Engineering, National Cheng Kung University, No. 1, Ta-Hsueh Road, Tainan, Taiwan (China); Huang, J.-L. [Department of Materials Science and Engineering, National Cheng Kung University, No. 1, Ta-Hsueh Road, Tainan, Taiwan (China)], E-mail: jlh888@mail.ncku.edu.tw

    2008-09-01

    The present study evaluated the feasibility of TiAlN films deposited using the ion beam sputter deposition (IBSD) method for metal-insulator-metal (MIM) (Ba,Sr)TiO{sub 3} (BST) capacitors. The BST films were crystallized at temperatures above 650 deg. C. TiAlN films deposited using the IBSD method were found having smooth surface and low electrical resistivity at high temperature conditions. TiAlN films showed a good diffusion barrier property against BST components. The J-E (current density-electric field) characteristics of Al/BST/TiAlN capacitors were good, with a high break down electric field of {+-} 2.5 MV/cm and a leakage current density of about 1 x 10{sup -5} A/cm{sup 2} at an applied field of {+-} 0.5 MV/cm. Thermal stress and lateral oxidation that occurred at the interface damaged the capacitor stacking structure. Macro holes that dispersed on the films resulted in higher leakage current and inconsistent J-E characteristics. Vacuum annealing with lower heating rate and furnace cooling, and a Ti-Al adhesion layer between TiAlN and the SiO{sub 2}/Si substrate can effectively minimize the stress effect. TiAlN film deposited using IBSD can be considered as a potential electrode and diffusion barrier material for MIM BST capacitors.

  10. Ion beam sputter deposited TiAlN films for metal-insulator-metal (Ba,Sr)TiO3 capacitor application

    International Nuclear Information System (INIS)

    Lee, S.-Y.; Wang, S.-C.; Chen, J.-S.; Huang, J.-L.

    2008-01-01

    The present study evaluated the feasibility of TiAlN films deposited using the ion beam sputter deposition (IBSD) method for metal-insulator-metal (MIM) (Ba,Sr)TiO 3 (BST) capacitors. The BST films were crystallized at temperatures above 650 deg. C. TiAlN films deposited using the IBSD method were found having smooth surface and low electrical resistivity at high temperature conditions. TiAlN films showed a good diffusion barrier property against BST components. The J-E (current density-electric field) characteristics of Al/BST/TiAlN capacitors were good, with a high break down electric field of ± 2.5 MV/cm and a leakage current density of about 1 x 10 -5 A/cm 2 at an applied field of ± 0.5 MV/cm. Thermal stress and lateral oxidation that occurred at the interface damaged the capacitor stacking structure. Macro holes that dispersed on the films resulted in higher leakage current and inconsistent J-E characteristics. Vacuum annealing with lower heating rate and furnace cooling, and a Ti-Al adhesion layer between TiAlN and the SiO 2 /Si substrate can effectively minimize the stress effect. TiAlN film deposited using IBSD can be considered as a potential electrode and diffusion barrier material for MIM BST capacitors

  11. Gamma radiation in ceramic capacitors: a study for space missions

    Science.gov (United States)

    dos Santos Ferreira, Eduardo; Sarango Souza, Juliana

    2017-10-01

    We studied the real time effects of the gamma radiation in ceramic capacitors, in order to evaluate the effects of cosmic radiation on these devices. Space missions have electronic circuits with various types of devices, many studies have been done on semiconductor devices exposed to gamma radiation, but almost no studies for passive components, in particular ceramic capacitors. Commercially sold ceramic capacitors were exposed to gamma radiation, and the capacitance was measured before and after exposure. The results clearly show that the capacitance decreases with exposure to gamma radiation. We confirmed this observation in a real time capacitance measurement, obtained using a data logging system developed by us using the open source Arduino platform.

  12. Electrochemical capacitor based on materials with pseudocapacitive properties

    OpenAIRE

    Olivia Moreno, David

    2011-01-01

    This thesis is divided into two chapters. Chapter 1 is about energy storage device such as the electrochemical capacitor (EC) and the electrode materials used for its construction. The basic principle of supercapacitor performance, double-layer capacitance and pseudocapacitance phenomena are described in the introduction. Activated carbons, nanotubes, conducting polymers and metal oxides as well as their composites were considered as electrode materials. Symmetric and asymmetric configurat...

  13. Strain effects in oxide superconductors

    International Nuclear Information System (INIS)

    Wada, H.; Kuroda, T.; Sekine, H.; Yuyama, M.; Itoh, K.

    1991-01-01

    Strain sensitivities of superconducting properties are critical to high magnetic field applications of superconductors, since critical temperature, T c , upper critical field, H c2 , and critical current (density), I c (J c ), are all degraded under strains. Oxide superconductors so far known are all very fragile, thus requiring to be fabricated in the form of composite. In the case of practical metallic superconductors, such as Nb 3 Sn and V 3 Ga, the so-called bronze method has been developed where these superconducting intermetallics are enveloped in a ductile metallic sheath. Recently, a fabrication method similar to the bronze method has been developed for the Bi 2 Sr 2 Ca 2 Cu 3 O x superconductors using Ag tubes as sheath. In the present study mono- and multicore BiPbSrCaCuO tape conductors were prepared by means of this Ag-sheath composite method, and examined in terms of strain sensitivity by measuring their T c and I c (J c ) under bending or tensile strains. (orig.)

  14. The influence of current collector corrosion on the performance of electrochemical capacitors

    Science.gov (United States)

    Wojciechowski, Jarosław; Kolanowski, Łukasz; Bund, Andreas; Lota, Grzegorz

    2017-11-01

    This paper discusses the effect of current collector (stainless steel 316L) corrosion on the performance of electrochemical capacitors operated in aqueous electrolytes. This topic seems to be often neglected in scientific research. The studied electrolytes were 1 M H2SO4, 1 M KI, 1 M Na2SO4, 1 M KOH and 6 M KOH. The corrosion process was investigated by means of selected direct and alternating current techniques. The surface of the current collectors as well as the corrosion products were characterised using scanning electron microscopy, energy-dispersive X-ray spectroscopy, Raman spectroscopy and atomic force microscopy. Stainless steel 316L in alkaline solutions is characterised by the lowest values of corrosion potentials whereas the potentials in acidic media become the most noble. Our studies show that corrosion potentials increase with decreasing pH value. This phenomenon can be explained with the formation of passive oxide films on the stainless steel current collectors. The passive oxide films are usually thicker and more porous in alkaline solutions than that in the other electrolytes. The processes occurring at the electrode/electrolyte interfaces strongly influence the working parameters of electrochemical capacitors such as voltage, working potentials of single electrodes, self-discharge as well as the internal resistance and cycling stability.

  15. Ni-BaTiO3-Based Base-Metal Electrode (BME) Ceramic Capacitors for Space Applications

    Science.gov (United States)

    Liu, Donhang; Fetter, Lula; Meinhold, Bruce

    2015-01-01

    A multi-layer ceramic capacitor (MLCC) is a high-temperature (1350C typical) co-fired ceramic monolithic that is composed of many layers of alternately stacked oxide-based dielectric and internal metal electrodes. To make the dielectric layers insulating and the metal electrode layers conducting, only highly oxidation-resistant precious metals, such as platinum, palladium, and silver, can be used for the co-firing of insulating MLCCs in a regular air atmosphere. MLCCs made with precious metals as internal electrodes and terminations are called precious-metal electrode (PME) capacitors. Currently, all military and space-level applications only address the use of PME capacitors.

  16. Effect of exercise training on leucine oxidation

    Energy Technology Data Exchange (ETDEWEB)

    Hendrix, M.K.; Layman, D.K.

    1986-03-01

    Oxidation of the BCAA leucine is increased during a bout of exhaustive exercise. The purpose of this study was to determine the effects of exercise training on leu oxidation during aerobic exercise. Female Sprague-Dawley rats were fed a commercial diet ad lib and divided into sedentary and two trained groups. Animals were trained to run on a treadmill with a 10/sup 0/ incline at 28 m/min for 5 wks for either 50 or 120 min/day. There were no differences in food intake or body weight. After a 12 hr fast, animals were run for 50 or 120 min and changes in leu catabolism determined by measurement of in vivo leu oxidation and activity of branched chain keto acid dehydrogenase (BCKAD). For measurement of leu oxidation, rats were injected IP with 4 ..mu..Ci 1-/sup 14/C-leu during the last 15 min of exercise, placed in glass metabolic chambers, and /sup 14/CO/sub 2/ collected in 1 N NaOH for 30 min periods. Leu oxidation was increased by 40% after 50 min of exercise and by 79% after 120 min of exercise. Five weeks of training reduced the rate of leu oxidation during an exercise bout. The activity of the BCKAD was not increased in the trained animals after either 50 or 120 min of exercise. These data indicate that the rate of leu oxidation during exercises is dependent on the duration of the exercise and that training will reduce the magnitude of this effect.

  17. Effects of adsorbates on Zircaloy oxidation in air

    International Nuclear Information System (INIS)

    Cho, Y.; Kim, Y-G.; Park, K.

    1997-01-01

    The air-oxidation of Zry and the effects of adsorbates on the oxidation are found by the intermittent measurement of the weight gain of specimens. NaC1 enhances the oxidation, where nonuniform stresses on the surface and C1 ions are the cause. LiOH also enhances the oxidation, where the initial oxide formed by LiOH seems to the reason. The effects of fluorides on oxidation are also measured. NaF is most harmful and KF follows next. LiF does not effect the oxidation of Zry. Diffusion of fluorides in oxide determines the enhancement. (author)

  18. Solid-state electric double layer capacitors fabricated with plastic crystal based flexible gel polymer electrolytes: Effective role of electrolyte anions

    International Nuclear Information System (INIS)

    Suleman, Mohd; Kumar, Yogesh; Hashmi, S.A.

    2015-01-01

    Flexible gel polymer electrolyte (GPE) thick films incorporated with solutions of lithium trifluoromethanesulfonate (Li-triflate or LiTf) and lithium bis trifluoromethane-sulfonimide (LiTFSI) in a plastic crystal succinonitrile (SN), entrapped in poly(vinylidine fluoride-co-hexafluoropropylene) (PVdF-HFP) have been prepared and characterized. The films have been used as electrolytes in the electrical double layer capacitors (EDLCs). Coconut-shell derived activated carbon with high specific surface area (∼2100 m 2 g −1 ) and mixed (micro- and meso-) porosity has been used as EDLC electrodes. The structural, thermal, and electrochemical characterization of the GPEs have been performed using scanning electron microscopy (SEM), X-ray diffraction (XRD), differential scanning calorimetry (DSC), impedance measurements and cyclic voltammetry. The high ionic conductivity (∼10 −3 S cm −1 at 25 °C), good electrochemical stability window (>4.0 V) and flexible nature of the free-standing films of GPEs show their competence in the fabrication of EDLCs. The EDLCs have been tested using electrochemical impedance spectroscopy, cyclic voltammetry, and charge–discharge studies. The EDLCs using LiTf based electrolyte have been found to give higher values of specific capacitance, specific energy, power density (240–280 F g −1 , ∼39 Wh kg −1 and ∼19 kW kg −1 , respectively) than the EDLC cell with LiTFSI based gel electrolyte. EDLCs have been found to show stable performance for ∼10 4 charge–discharge cycles. The comparative studies indicate the effective role of electrolyte anions on the capacitive performance of the solid-state EDLCs. - Graphical abstract: Display Omitted - Highlights: • Flexible EDLCs with succinonitrile based gel electrolyte membranes are reported. • Anionic size of salts in gel electrolytes plays important role on capacitive performance. • Li-triflate incorporated gel electrolyte shows better performance over LiTFSI-based gel.

  19. Solid-state electric double layer capacitors fabricated with plastic crystal based flexible gel polymer electrolytes: Effective role of electrolyte anions

    Energy Technology Data Exchange (ETDEWEB)

    Suleman, Mohd; Kumar, Yogesh; Hashmi, S.A., E-mail: sahashmi@physics.du.ac.in

    2015-08-01

    Flexible gel polymer electrolyte (GPE) thick films incorporated with solutions of lithium trifluoromethanesulfonate (Li-triflate or LiTf) and lithium bis trifluoromethane-sulfonimide (LiTFSI) in a plastic crystal succinonitrile (SN), entrapped in poly(vinylidine fluoride-co-hexafluoropropylene) (PVdF-HFP) have been prepared and characterized. The films have been used as electrolytes in the electrical double layer capacitors (EDLCs). Coconut-shell derived activated carbon with high specific surface area (∼2100 m{sup 2} g{sup −1}) and mixed (micro- and meso-) porosity has been used as EDLC electrodes. The structural, thermal, and electrochemical characterization of the GPEs have been performed using scanning electron microscopy (SEM), X-ray diffraction (XRD), differential scanning calorimetry (DSC), impedance measurements and cyclic voltammetry. The high ionic conductivity (∼10{sup −3} S cm{sup −1} at 25 °C), good electrochemical stability window (>4.0 V) and flexible nature of the free-standing films of GPEs show their competence in the fabrication of EDLCs. The EDLCs have been tested using electrochemical impedance spectroscopy, cyclic voltammetry, and charge–discharge studies. The EDLCs using LiTf based electrolyte have been found to give higher values of specific capacitance, specific energy, power density (240–280 F g{sup −1}, ∼39 Wh kg{sup −1} and ∼19 kW kg{sup −1}, respectively) than the EDLC cell with LiTFSI based gel electrolyte. EDLCs have been found to show stable performance for ∼10{sup 4} charge–discharge cycles. The comparative studies indicate the effective role of electrolyte anions on the capacitive performance of the solid-state EDLCs. - Graphical abstract: Display Omitted - Highlights: • Flexible EDLCs with succinonitrile based gel electrolyte membranes are reported. • Anionic size of salts in gel electrolytes plays important role on capacitive performance. • Li-triflate incorporated gel electrolyte shows better

  20. Effect of Pore Structure and Chemistry on the Performance of Activated Oil Sands Petroleum Coke Electrodes for use in Electrochemical Double-Layer Capacitors

    Science.gov (United States)

    Zuliani, Jocelyn Ellen

    Electrical energy storage is a limiting barrier to widespread usage and commercialization of sustainable and renewable energy sources, such as wind and solar energy, as well as integration of electric vehicles. Electrochemical double-layer capacitors (EDLCs) are a promising energy storage technology that offers the benefits of high power density, long cycle life, rapid charging rates, and moderate energy density. The energy storage mechanism of EDLCs is physical ion adsorption on the surface of porous carbon electrodes. This thesis is an investigation of three different sections relating to EDLCs: 1) techniques to properly characterize novel porous carbon electrode materials, 2) investigation of activated oil sands petroleum coke (APC) as the electrode material for EDLCs, and 3) a systematic study of the effects of porous carbon structure and chemistry on EDLC performance. In the first section, it was shown that variations in operating conditions and testing techniques can lead to discrepancies in measured and reported capacitance. Therefore, it was concluded that a standardized approach is necessary in order to properly compare different porous carbon electrodes. In the second section, APC was investigated as a novel electrode material for EDLCs. PetCoke is a carbon dense material that can be activated with potassium hydroxide to generate high surface area porous carbon materials. These materials show promising electrochemical performance in EDLCs, with capacitance values up to 400 Fg-1 in 4M potassium hydroxide aqueous electrolytes, depending on the operating conditions. Additionally, the power density of these materials is comparable to that of other carbon nanomaterials, which are more costly and challenging to produce. Finally, the third section investigates the relationship between measured capacitance, and carbon macrostructure, meso-structure, microstructure, and oxygen content. In each of these studies, the desired parameter was varied, while all others

  1. Interaction effects in magnetic oxide nanoparticle systems

    Indian Academy of Sciences (India)

    The interaction effects in magnetic nanoparticle system were studied through a Monte Carlo simulation. The results of simulations were compared with two different magnetic systems, namely, iron oxide polymer nanocomposites prepared by polymerization over core and nanocrystalline cobalt ferrite thin films prepared by ...

  2. The application of structural nonlinearity in the development of linearly tunable MEMS capacitors

    International Nuclear Information System (INIS)

    Shavezipur, M; Khajepour, A; Hashemi, S M

    2008-01-01

    Electrostatically actuated parallel-plate tunable capacitors are the most desired MEMS capacitors because of their smaller sizes and higher Q-factors. However, these capacitors suffer from low tunability and exhibit high sensitivity near the pull-in voltage which counters the concept of tunability. In this paper, a novel design for parallel-plate tunable capacitors with high tunability and linear capacitance–voltage (C–V) response is developed. The design uses nonlinear structural rigidities to relieve intrinsic electrostatic nonlinearity in MEMS capacitors. Based on the force–displacement characteristic of an ideally linear capacitor, a real beam-like nonlinear spring model is developed. The variable stiffness coefficients of such springs improve the linearity of the C–V curve. Moreover, because the structural stiffness increases with deformations, the pull-in is delayed and higher tunability is achieved. Finite element simulations reveal that capacitors with air gaps larger than 4 µm and supporting beams thinner than 1 µm can generate highly linear C–V responses and tunabilities over 120%. Experimental results for capacitors fabricated by PolyMUMPs verify the effect of weak nonlinear geometric stiffness on improving the tunability for designs with a small air gap and relatively thick structural layers

  3. A noise level prediction method based on electro-mechanical frequency response function for capacitors.

    Science.gov (United States)

    Zhu, Lingyu; Ji, Shengchang; Shen, Qi; Liu, Yuan; Li, Jinyu; Liu, Hao

    2013-01-01

    The capacitors in high-voltage direct-current (HVDC) converter stations radiate a lot of audible noise which can reach higher than 100 dB. The existing noise level prediction methods are not satisfying enough. In this paper, a new noise level prediction method is proposed based on a frequency response function considering both electrical and mechanical characteristics of capacitors. The electro-mechanical frequency response function (EMFRF) is defined as the frequency domain quotient of the vibration response and the squared capacitor voltage, and it is obtained from impulse current experiment. Under given excitations, the vibration response of the capacitor tank is the product of EMFRF and the square of the given capacitor voltage in frequency domain, and the radiated audible noise is calculated by structure acoustic coupling formulas. The noise level under the same excitations is also measured in laboratory, and the results are compared with the prediction. The comparison proves that the noise prediction method is effective.

  4. Greenhouse effect due to atmospheric nitrous oxide

    Science.gov (United States)

    Yung, Y. L.; Wang, W. C.; Lacis, A. A.

    1976-01-01

    The greenhouse effect due to nitrous oxide in the present atmosphere is about 0.8 K. Increase in atmospheric N2O due to perturbation of the nitrogen cycle by man may lead to an increase in surface temperature as large as 0.5 K by 2025, or 1.0 K by 2100. Other climatic effects of N2O are briefly discussed.

  5. A Two-terminal Active Capacitor

    DEFF Research Database (Denmark)

    Wang, Haoran; Wang, Huai

    2017-01-01

    This letter proposes a concept of two-terminal active capacitor implemented by power semiconductor switches and passive elements. The active capacitor has the same level of convenience as a passive one with two power terminals only. It is application independent and can be specified by rated...... voltage, ripple current, equivalent series resistance, and operational frequency range. The concept, control method, self-power scheme, and impedance characteristics of the active capacitor are presented. A case study of the proposed active capacitor for a capacitive DC-link application is discussed....... The results reveal a significantly lower overall energy storage of passive elements and a reduced cost to fulfill a specific reliability target, compared to a passive capacitor solution. Proof-of-concept experimental results are given to verify the functionality of the proposed capacitor....

  6. Redox-capacitor to connect electrochemistry to redox-biology.

    Science.gov (United States)

    Kim, Eunkyoung; Leverage, W Taylor; Liu, Yi; White, Ian M; Bentley, William E; Payne, Gregory F

    2014-01-07

    It is well-established that redox-reactions are integral to biology for energy harvesting (oxidative phosphorylation), immune defense (oxidative burst) and drug metabolism (phase I reactions), yet there is emerging evidence that redox may play broader roles in biology (e.g., redox signaling). A critical challenge is the need for tools that can probe biologically-relevant redox interactions simply, rapidly and without the need for a comprehensive suite of analytical methods. We propose that electrochemistry may provide such a tool. In this tutorial review, we describe recent studies with a redox-capacitor film that can serve as a bio-electrode interface that can accept, store and donate electrons from mediators commonly used in electrochemistry and also in biology. Specifically, we (i) describe the fabrication of this redox-capacitor from catechols and the polysaccharide chitosan, (ii) discuss the mechanistic basis for electron exchange, (iii) illustrate the properties of this redox-capacitor and its capabilities for promoting redox-communication between biology and electrodes, and (iv) suggest the potential for enlisting signal processing strategies to "extract" redox information. We believe these initial studies indicate broad possibilities for enlisting electrochemistry and signal processing to acquire "systems level" redox information from biology.

  7. Capacitor discharges, magnetohydrodynamics, X-rays, ultrasonics

    CERN Document Server

    Früngel, Frank B A

    1965-01-01

    High Speed Pulse Technology, Volume 1: Capacitor Discharges - Magnetohydrodynamics - X-Rays - Ultrasonics deals with the theoretical and engineering problems that arise in the capacitor discharge technique.This book discusses the characteristics of dielectric material, symmetrical switch tubes with mercury filling, and compensation conductor forms. The transformed discharge for highest current peaks, ignition transformer for internal combustion engines, and X-ray irradiation of subjects in mechanical motion are also elaborated. This text likewise covers the transformed capacitor discharge in w

  8. Effects of the top-electrode preparation method on the ferroelectric properties of Pt/Pb(Zr,Ti)O3/Pt thin film capacitors

    International Nuclear Information System (INIS)

    Lee, Eun Gu; Lee, Jae Gab; Kim, Sun Jae

    2006-01-01

    The deformation in the hysteresis loop of Pt/PZT/Pt thin-film capacitors due to deposition and patterning of the top electrode has been investigated. The PZT film was aged during the deposition of the top electrode and was positively poled during reactive ion etching (RIE). The PZT film having sputtered top electrode was very sensitive to the RIE process. The film with a thinner top electrode showed less initial switching polarization due to less compressive stress, but better fatigue characteristics due to an enhanced partial-switching region.

  9. Materials science and integration bases for fabrication of (BaxSr1-x)TiO3 thin film capacitors with layered Cu-based electrodes

    Science.gov (United States)

    Fan, W.; Kabius, B.; Hiller, J. M.; Saha, S.; Carlisle, J. A.; Auciello, O.; Chang, R. P. H.; Ramesh, R.

    2003-11-01

    The synthesis and fundamental material properties of layered TiAl/Cu/Ta electrodes were investigated to achieve the integration of Cu electrodes with high-dielectric constant (κ) oxide thin films for application to the fabrication of high-frequency devices. The Ta layer is an excellent diffusion barrier to inhibit deleterious Cu diffusion into the Si substrate, while the TiAl layer provides an excellent barrier against oxygen diffusion into the Cu layer to inhibit Cu oxidation during the growth of the high-κ layer in an oxygen atmosphere. Polycrystalline (BaxSr1-x)TiO3 (BST) thin films were grown on the Cu-based bottom electrode by rf magnetron sputtering at temperatures in the range 400-600 °C in oxygen, to investigate the performance of BST/Cu-based capacitors. Characterization of the Cu-based layered structure using surface analytical methods showed that two amorphous oxide layers were formed on both sides of the TiAl barrier, such that the oxide layer on the free surface of the TiAl layer correlates with TiAlOx, while the oxide layer at the TiAl/Cu interface is an Al2O3-rich layer. This double amorphous barrier layer structure effectively prevents oxygen penetration towards the underlying Cu and Ta layers. The TiAlOx interfacial layer, which has a relatively low dielectric constant compared with BST, reduced the total capacitance of the BST thin film capacitors. In addition, the layered electrode-oxide interface roughening observed during the growth of BST films at high temperature, due to copper grain growth, resulted in large dielectric loss on the fabricated BST capacitors. These problems were solved by growing the BST layer at 450 °C followed by a rapid thermal annealing at 700 °C. This process significantly reduced the thickness of the TiAlOx layer and interface roughness resulting in BST capacitors exhibiting properties suitable for the fabrication of high-performance high-frequency devices. In summary, relatively high dielectric constant (280), low

  10. Materials science and integration bases for fabrication of (BaxSr1-x)TiO3 thin film capacitors with layered Cu-based electrodes

    International Nuclear Information System (INIS)

    Fan, W.; Kabius, B.; Hiller, J.M.; Saha, S.; Carlisle, J.A.; Auciello, O.; Chang, R.P.H.; Ramesh, R.

    2003-01-01

    The synthesis and fundamental material properties of layered TiAl/Cu/Ta electrodes were investigated to achieve the integration of Cu electrodes with high-dielectric constant (κ) oxide thin films for application to the fabrication of high-frequency devices. The Ta layer is an excellent diffusion barrier to inhibit deleterious Cu diffusion into the Si substrate, while the TiAl layer provides an excellent barrier against oxygen diffusion into the Cu layer to inhibit Cu oxidation during the growth of the high-κ layer in an oxygen atmosphere. Polycrystalline (Ba x Sr 1-x )TiO 3 (BST) thin films were grown on the Cu-based bottom electrode by rf magnetron sputtering at temperatures in the range 400-600 deg. C in oxygen, to investigate the performance of BST/Cu-based capacitors. Characterization of the Cu-based layered structure using surface analytical methods showed that two amorphous oxide layers were formed on both sides of the TiAl barrier, such that the oxide layer on the free surface of the TiAl layer correlates with TiAlO x , while the oxide layer at the TiAl/Cu interface is an Al 2 O 3 -rich layer. This double amorphous barrier layer structure effectively prevents oxygen penetration towards the underlying Cu and Ta layers. The TiAlO x interfacial layer, which has a relatively low dielectric constant compared with BST, reduced the total capacitance of the BST thin film capacitors. In addition, the layered electrode-oxide interface roughening observed during the growth of BST films at high temperature, due to copper grain growth, resulted in large dielectric loss on the fabricated BST capacitors. These problems were solved by growing the BST layer at 450 deg. C followed by a rapid thermal annealing at 700 deg. C. This process significantly reduced the thickness of the TiAlO x layer and interface roughness resulting in BST capacitors exhibiting properties suitable for the fabrication of high-performance high-frequency devices. In summary, relatively high

  11. Carbon activation process for increased surface accessibility in electrochemical capacitors

    Science.gov (United States)

    Doughty, Daniel H.; Eisenmann, Erhard T.

    2001-01-01

    A process for making carbon film or powder suitable for double capacitor electrodes having a capacitance of up to about 300 F/cm.sup.3 is disclosed. This is accomplished by treating in aqueous nitric acid for a period of about 5 to 15 minutes thin carbon films obtained by carbonizing carbon-containing polymeric material having a high degree of molecular directionality, such as polyimide film, then heating the treated carbon film in a non-oxidizing atmosphere at a non-graphitizing temperature of at least 350.degree. C. for about 20 minutes, and repeating alternately the nitric acid step and the heating step from 7 to 10 times. Capacitors made with this carbon may find uses ranging from electronic devices to electric vehicle applications.

  12. Enhanced interfacial and electrical characteristics of 4H-SiC MOS capacitor with lanthanum silicate passivation interlayer

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Qian [State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-system & Information Technology, Chinese Academy of Sciences, Changning Road 865, Shanghai 200050 (China); University of Chinese Academy of Sciences, Beijing 100049 (China); Cheng, Xinhong, E-mail: xh_cheng@mail.sim.ac.cn [State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-system & Information Technology, Chinese Academy of Sciences, Changning Road 865, Shanghai 200050 (China); Zheng, Li, E-mail: zhengli@mail.sim.ac.cn [State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-system & Information Technology, Chinese Academy of Sciences, Changning Road 865, Shanghai 200050 (China); University of Chinese Academy of Sciences, Beijing 100049 (China); Ye, Peiyi; Li, Menglu [Department of Materials Science and Engineering, University of California, Los Angeles, CA 90095 (United States); Shen, Lingyan; Li, Jingjie; Zhang, Dongliang; Gu, Ziyue [State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-system & Information Technology, Chinese Academy of Sciences, Changning Road 865, Shanghai 200050 (China); University of Chinese Academy of Sciences, Beijing 100049 (China); Yu, Yuehui [State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-system & Information Technology, Chinese Academy of Sciences, Changning Road 865, Shanghai 200050 (China)

    2017-07-15

    Highlights: • The 4H-SiC MOS capacitor with an untra-thin LaSiO{sub x} passivation layer and Al{sub 2}O{sub 3} gate dielectric was fabricated. • The detrimental SiO{sub x} interfacial layer could be effectively restrained by the LaSiO{sub x} passivation layer. • The passivation mechanism of LaSiO{sub x} was analyzed by HRTEM, XPS and electrical measurements. • The 4H-SiC MOS capacitor with a LaSiO{sub x} passivation layer shows excellent device characteristics. • This technique provides an efficient path to improve dielectrics/4H-SiC interfaces for future high-power device applications. - Abstract: The detrimental sub-oxide (SiO{sub x}) interfacial layer formed during the 4H-SiC metal-oxide-semiconductor (MOS) capacitor fabrication will drastically damage its device performance. In this work, an ultrathin lanthanum silicate (LaSiO{sub x}) passivation layer was introduced to enhance the interfacial and electrical characteristics of 4H-SiC MOS capacitor with Al{sub 2}O{sub 3} gate dielectric. The interfacial LaSiO{sub x} formation was investigated by high resolution transmission electron microscopy and X-ray photoelectron spectroscopy. The 4H-SiC MOS capacitor with ultrathin LaSiO{sub x} passivation interlayer shows excellent interfacial and electrical characteristics, including lower leakage current density, higher dielectric breakdown electric field, smaller C–V hysteresis, and lower interface states density and border traps density. The involved mechanism implies that the LaSiO{sub x} passivation interlayer can effectively restrain SiO{sub x} formation and improve the Al{sub 2}O{sub 3}/4H-SiC interface quality. This technique provides an efficient path to improve dielectrics/4H-SiC interfaces for future high-power device applications.

  13. Effect of thyroid function on LDL oxidation.

    Science.gov (United States)

    Costantini, F; Pierdomenico, S D; De Cesare, D; De Remigis, P; Bucciarelli, T; Bittolo-Bon, G; Cazzolato, G; Nubile, G; Guagnano, M T; Sensi, S; Cuccurullo, F; Mezzetti, A

    1998-05-01

    In this study, the effect of different levels of thyroid hormone and metabolic activity on low density lipoprotein (LDL) oxidation was investigated. Thus, in 16 patients with hyperthyroidism, 16 with hypothyroidism, and 16 age- and sex-matched healthy normolipidemic control subjects, the native LDL content in lipid peroxides, vitamin E, beta-carotene, and lycopene, as well as the susceptibility of these particles to undergo lipid peroxidation, was assessed. Hyperthyroidism was associated with significantly higher lipid peroxidation, as characterized by a higher native LDL content in lipid peroxides, a lower lag phase, and a higher oxidation rate than in the other two groups. This elevated lipid peroxidation was associated with a lower LDL antioxidant concentration. Interestingly, hypothyroid patients showed an intermediate behavior. In fact, in hypothyroidism, LDL oxidation was significantly lower than in hyperthyroidism but higher than in the control group. Hypothyroidism was also characterized by the highest beta-carotene LDL content, whereas vitamin E was significantly lower than in control subjects. In hyperthyroidism but not in the other two groups, LDL oxidation was strongly influenced by free thyroxine blood content. In fact in this group, the native LDL lipid peroxide content and the lag phase were directly and indirectly, respectively, related to free thyroxine blood levels. On the contrary, in hypothyroidism LDL oxidation was strongly and significantly related to serum lipids. In conclusion, both hypothyroidism and hyperthyroidism are characterized by higher levels of LDL oxidation when compared with normolipidemic control subjects. In hyperthyroid patients, the increased lipid peroxidation was strictly related to free thyroxine levels, whereas in hypothyroidism it was strongly influenced by serum lipids.

  14. Hydraulic Capacitor Analogy

    Science.gov (United States)

    Baser, Mustafa

    2007-01-01

    Students have difficulties in physics because of the abstract nature of concepts and principles. One of the effective methods for overcoming students' difficulties is the use of analogies to visualize abstract concepts to promote conceptual understanding. According to Iding, analogies are consistent with the tenets of constructivist learning…

  15. Hybrid nanostructured materials for high-performance electrochemical capacitors

    KAUST Repository

    Yu, Guihua

    2013-03-01

    The exciting development of advanced nanostructured materials has driven the rapid growth of research in the field of electrochemical energy storage (EES) systems which are critical to a variety of applications ranging from portable consumer electronics, hybrid electric vehicles, to large industrial scale power and energy management. Owing to their capability to deliver high power performance and extremely long cycle life, electrochemical capacitors (ECs), one of the key EES systems, have attracted increasing attention in the recent years since they can complement or even replace batteries in the energy storage field, especially when high power delivery or uptake is needed. This review article describes the most recent progress in the development of nanostructured electrode materials for EC technology, with a particular focus on hybrid nanostructured materials that combine carbon based materials with pseudocapacitive metal oxides or conducting polymers for achieving high-performance ECs. This review starts with an overview of EES technologies and the comparison between various EES systems, followed by a brief description of energy storage mechanisms for different types of EC materials. This review emphasizes the exciting development of both hybrid nanomaterials and novel support structures for effective electrochemical utilization and high mass loading of active electrode materials, both of which have brought the energy density of ECs closer to that of batteries while still maintaining their characteristic high power density. Last, future research directions and the remaining challenges toward the rational design and synthesis of hybrid nanostructured electrode materials for next-generation ECs are discussed. © 2012 Elsevier Ltd.

  16. New Temperature-Insensitive Electronically-Tunable Grounded Capacitor Simulator

    OpenAIRE

    Abuelma'atti, Muhammad Taher; Khan, Muhammad Haroon

    1996-01-01

    A new circuit for simulating a grounded capacitor is presented. The circuit uses one operationalamplifier (OA), three operational-transconductance amplifiers (OTAs), and one capacitor. The realized capacitor is temperature-insensitive and electronically tunable. Experimental results are included.

  17. New series half-bridge converters with the balance input split capacitor voltages

    Science.gov (United States)

    Lin, Bor-Ren; Chiang, Huann-Keng; Wang, Shang-Lun

    2016-03-01

    This article presents a new dc/dc converter to perform the main functions of zero voltage switching (ZWS), low converter size, high switching frequency and low-voltage stress. Metal-oxide-semiconductor field-effect transistors (MOSFETs) with high switching frequency are used to reduce the converter size and increase circuit efficiency. To overcome low-voltage stress and high turn-on resistance of MOSFETs, the series half-bridge topology is adopted in the proposed converter. Hence, the low-voltage stress MOSFETs can be used for medium-input voltage applications. The asymmetric pulse-width modulation is used to generate the gating signals and achieve the ZWS. On the secondary side, the parallel connection of two diode rectifiers is adopted to reduce the current rating of passive components. On the primary side, the series connection of two transformers is used to balance two output inductor currents. Two flying capacitors are used to automatically balance the input split capacitor voltages. Finally, experiments with 1000 W rated power are performed to verify the theoretical analysis and the effectiveness of proposed converter.

  18. Effects of sulfur oxides on eicosanoids

    International Nuclear Information System (INIS)

    Chen, L.C.; Miller, P.D.; Amdur, M.O.

    1989-01-01

    Ultrafine metal oxides and SO2 react during coal combustion or smelting operations to form primary emissions coated with an acidic SOx layer. Ongoing work in this laboratory has examined the effects of sulfur oxides on pulmonary functions of guinea pigs. We have previously reported that 20 micrograms/m3 acidic sulfur oxide as a surface layer on ultrafine ZnO particles decreases lung volumes, decreases carbon monoxide diffusing capacity, and causes lung inflammation in guinea pigs after 4 daily 3-h exposures. It also produces bronchial hypersensitivity following a single 1-h exposure. The importance of this surface layer is demonstrated by our observation that 200 micrograms/m3 of sulfuric acid droplets of equivalent size are needed to produce the same degree of hypersensitivity. This study characterized the concentration-dependent effects of in vivo exposures to sulfur oxides on arachidonic acid metabolism in the guinea pig lung, and investigated the time course and the relation between eicosanoid composition and pulmonary functions. We focused specifically on four cyclooxygenase metabolites of arachidonic acid, that is, prostaglandins (PG) E1, F2 alpha, 6-keto prostaglandin F1 alpha, and thromboxane (Tx) B2, and two groups of sulfidopeptide leukotrienes (C4, D4, E4, and F4). Guinea pigs were exposed to ultrafine ZnO aerosol (count median diameter = 0.05 microns, sigma g = 1.80) with a layer of acidic sulfur oxide on the surface of the particles. Lung lavage was collected after exposures, and the levels of arachidonic acid metabolites were determined using radioimmunoassay (RIA). Concentration-dependent promotion of PGF2 alpha and concentration-dependent suppression of LtB4 were observed. The increased PGF2 alpha was associated with depressed vital capacity and diffusing capacity of the lungs measured in guinea pigs exposed to the same atmosphere described in a previous study

  19. Memory characteristics of an MOS capacitor structure with double-layer semiconductor and metal heterogeneous nanocrystals

    International Nuclear Information System (INIS)

    Ni Henan; Wu Liangcai; Song Zhitang; Hui Chun

    2009-01-01

    An MOS (metal oxide semiconductor) capacitor structure with double-layer heterogeneous nanocrystals consisting of semiconductor and metal embedded in a gate oxide for nonvolatile memory applications has been fabricated and characterized. By combining vacuum electron-beam co-evaporated Si nanocrystals and self-assembled Ni nanocrystals in a SiO 2 matrix, an MOS capacitor with double-layer heterogeneous nanocrystals can have larger charge storage capacity and improved retention characteristics compared to one with single-layer nanocrystals. The upper metal nanocrystals as an additional charge trap layer enable the direct tunneling mechanism to enhance the flat voltage shift and prolong the retention time. (semiconductor devices)

  20. The Co-60 gamma-ray irradiation effects on the Al/HfSiO4/p-Si/Al MOS capacitors

    Science.gov (United States)

    Lok, R.; Kaya, S.; Karacali, H.; Yilmaz, E.

    2017-12-01

    In this work, the initial interface trap density (Nit) to examine device compability for microelectronics and then the Co-60 gamma irradiation responses of Al/HfSiO4/p-Si/Al (MOS) capacitors were investigated in various dose ranges up to 70 Gy. Pre-irradiation response of the devices was evaluated from high frequency (HF) and low frequency (LF) capacitance method and the Nit was calculated as 9.91 × 1011 cm-2 which shows that the HfSiO4/p-Si interface quality is convenient for microelectronics applications. The irradiation responses of the devices were carried out from flat-band and mid-gap voltage shifts obtained from stretch of capacitance characteristics prior to and after irradiation. The results show that the flat band voltages very slightly shifted to positive voltage values demonstrating the enhancement of negative charge trapping in device structure. The sensitivity of the Al/HfSiO4/p-Si/Al MOS capacitors was found to be 4.41 mV/Gy for 300 nm-thick HfSiO4 gate dielectrics. This value approximately 6.5 times smaller compared to the same thickness conventional SiO2 based MOS devices. Therefore, HfSiO4 exhibits crucial irradiation tolerance in gamma irradiation environment. Consequently, HfSiO4 dielectrics may have significant usage for microelectronic technology as a radiation hard material where radiation field exists such as in space applications.

  1. Nanodomain Engineering in Ferroelectric Capacitors with Graphene Electrodes.

    Science.gov (United States)

    Lu, Haidong; Wang, Bo; Li, Tao; Lipatov, Alexey; Lee, Hyungwoo; Rajapitamahuni, Anil; Xu, Ruijuan; Hong, Xia; Farokhipoor, Saeedeh; Martin, Lane W; Eom, Chang-Beom; Chen, Long-Qing; Sinitskii, Alexander; Gruverman, Alexei

    2016-10-12

    Polarization switching in ferroelectric capacitors is typically realized by application of an electrical bias to the capacitor electrodes and occurs via a complex process of domain structure reorganization. As the domain evolution in real devices is governed by the distribution of the nucleation centers, obtaining a domain structure of a desired configuration by electrical pulsing is challenging, if not impossible. Recent discovery of polarization reversal via the flexoelectric effect has opened a possibility for deterministic control of polarization in ferroelectric capacitors. In this paper, we demonstrate mechanical writing of arbitrary-shaped nanoscale domains in thin-film ferroelectric capacitors with graphene electrodes facilitated by a strain gradient induced by a tip of an atomic force microscope (AFM). A phase-field modeling prediction of a strong effect of graphene thickness on the threshold load required to initiate mechanical switching has been confirmed experimentally. Deliberate voltage-free domain writing represents a viable approach for development of functional devices based on domain topology and electronic properties of the domains and domain walls.

  2. Protective effects of flavonoids from corn silk on oxidative stress ...

    African Journals Online (AJOL)

    Protective effects of flavonoids from corn silk on oxidative stress induced by ... The present study aims at exploring the effects of flavonoids from corn silk (FCS) on oxidative stress induced by exhaustive exercise in mice. ... from 32 Countries:.

  3. Possible oxidative effects of isotretinoin and modulatory effects of ...

    African Journals Online (AJOL)

    ... in the treatment of nodular cystic acne and as an inhibitor of proliferation of neoplastic cells, by exerting a regulatory effect on the cell differentiation. This study aimed at investigating the possible oxidative effects of ITN and modulatory effects of vitamins A and C in mutant and non-mutant Saccharomyces cerevisiae strains.

  4. Nanoporous carbon for electrochemical capacitors.

    Energy Technology Data Exchange (ETDEWEB)

    Siegal, Michael P.; Bunker, Bruce Conrad; Limmer, Steven J.; Yelton, William Graham

    2010-05-01

    Nanoporous carbon (NPC) is a purely graphitic material with highly controlled densities ranging from less than 0.1 to 2.0 g/cm3, grown via pulsed-laser deposition. Decreasing the density of NPC increases the interplanar spacing between graphene-sheet fragments. This ability to tune the interplanar spacing makes NPC an ideal model system to study the behavior of carbon electrodes in electrochemical capacitors and batteries. We examine the capacitance of NPC films in alkaline and acidic electrolytes, and measure specific capacitances as high as 242 F/g.

  5. Nanoporous carbon for electrochemical capacitors.

    Energy Technology Data Exchange (ETDEWEB)

    Overmyer, Donald L.; Siegal, Michael P.; Bunker, Bruce Conrad; Limmer, Steven J.; Yelton, William Graham

    2010-04-01

    Nanoporous carbon (NPC) is a purely graphitic material with highly controlled densities ranging from less than 0.1 to 2.0 g/cm3, grown via pulsed-laser deposition. Decreasing the density of NPC increases the interplanar spacing between graphene-sheet fragments. This ability to tune the interplanar spacing makes NPC an ideal model system to study the behavior of carbon electrodes in electrochemical capacitors and batteries. We examine the capacitance of NPC films in alkaline and acidic electrolytes, and measure specific capacitances as high as 242 F/g.

  6. Switched-capacitor multiply-by-two amplifier with reduced capacitor mismatches sensitivity and full swing sample signal common-mode voltage

    International Nuclear Information System (INIS)

    Xu Xinnan; Yao Suying; Xu Jiangtao; Nie Kaiming

    2012-01-01

    A switched-capacitor amplifier with an accurate gain of two that is insensitive to component mismatch is proposed. This structure is based on associating two sets of two capacitors in cross series during the amplification phase. This circuit permits the common-mode voltage of the sample signal to reach full swing. Using the charge-complement technique, the proposed amplifier can reduce the impact of parasitic capacitors on the gain accuracy effectively. Simulation results show that as sample signal common-mode voltage changes, the difference between the minimum and maximum gain error is less than 0.03%. When the capacitor mismatch is increased from 0 to 0.2%, the gain error is deteriorated by 0.00015%. In all simulations, the gain of amplifier is 69 dB. (semiconductor integrated circuits)

  7. Carbons, ionic liquids and quinones for electrochemical capacitors

    Directory of Open Access Journals (Sweden)

    Raul eDiaz

    2016-04-01

    Full Text Available Carbons are the main electrode materials used in electrochemical capacitors, which are electrochemical energy storage devices with high power densities and long cycling lifetimes. However, increasing their energy density will improve their potential for commercial implementation. In this regard, the use of high surface area carbons and high voltage electrolytes are well known strategies to increase the attainable energy density, and lately ionic liquids have been explored as promising alternatives to current state of the art acetonitrile-based electrolytes. Also, in terms of safety and sustainability ionic liquids are attractive electrolyte materials for electrochemical capacitors. In addition, it has been shown that the matching of the carbon pore size with the electrolyte ion size further increases the attainable electric double layer (EDL capacitance and energy density.The use of pseudocapacitive reactions can significantly increase the attainable energy density, and quinonic-based materials offer a potentially sustainable and cost effective research avenue for both the electrode and the electrolyte. This perspective will provide an overview of the current state of the art research on electrochemical capacitors based on combinations of carbons, ionic liquids and quinonic compounds, highlighting performances and challenges and discussing possible future research avenues. In this regard, current interest is mainly focused on strategies which may ultimately lead to commercially competitive sustainable high performance electrochemical capacitors for different applications including those requiring mechanical flexibility and biocompatibility.

  8. Simple Ways to Make Real Capacitors

    Science.gov (United States)

    Herman, Rhett

    2014-01-01

    Many of us have grabbed two pieces of aluminum foil and a paper towel, quickly sandwiched them together, and exclaimed in lecture, "Look! It's easy to make a capacitor!" Then we move on from there, calculating things such as capacitances with various dielectrics or plate sizes, the capacitance of capacitor networks, RC circuits,…

  9. Dielectric material options for integrated capacitors

    NARCIS (Netherlands)

    Ruhl, G.; Lehnert, W.; Lukosius, M.; Wenger, C.; Baristiran Kaynak, C.; Blomberg, T.; Haukka, S.; Baumann, P.K.; Besling, W.F.A.; Roest, A.L.; Riou, B.; Lhostis, S.; Halimaou, A.; Roozeboom, F.; Langereis, E.; Kessels, W.M.M.; Zauner, A.; Rushworth, S.A.

    2014-01-01

    Future MIM capacitor generations will require significantly increased specific capacitances by utilization of high-k dielectric materials. In order to achieve high capacitance per chip area, these dielectrics have to be deposited in three-dimensional capacitor structures by ALD or AVD (atomic vapor

  10. Cellulose Triacetate Dielectric Films For Capacitors

    Science.gov (United States)

    Yen, Shiao-Ping S.; Jow, T. Richard

    1994-01-01

    Cellulose triacetate investigated for use as dielectric material in high-energy-density capacitors for pulsed-electrical-power systems. Films of cellulose triacetate metalized on one or both sides for use as substrates for electrodes and/or as dielectrics between electrodes in capacitors. Used without metalization as simple dielectric films. Advantages include high breakdown strength and self-healing capability.

  11. Microprocessor Controlled Capacitor Bank Switching System for ...

    African Journals Online (AJOL)

    In this work, analysis and development of a microprocessor controlled capacitor bank switching system for deployment in a smart distribution network was carried out. This system was implemented by the use of discreet components such as resistors, capacitors, transistor, diode, automatic voltage regulator, with the ...

  12. Effect of total pressure on graphite oxidation

    International Nuclear Information System (INIS)

    Burnette, R.D.; Hoot, C.G.

    1983-04-01

    Graphite corrosion in the high-temperature gas-cooled reactor (HTGR) is calculated using two key assumptions: (1) the kinetic, catalysis, and transport characteristics of graphite determined by bench-scale tests apply to large components at reactor conditions and (2) the effects of high pressure and turbulent flow are predictable. To better understand the differences between laboratory tests and reactor conditions, a high-pressure test loop (HPTL) has been constructed and used to perform tests at reactor temperature, pressure, and flow conditions. The HPTL is intended to determine the functional dependence of oxidation rate and characteristics on total pressure and gas velocity and to compare the oxidation results with calculations using models and codes developed for the reactor

  13. Temperature effect on surface oxidation of titanium

    International Nuclear Information System (INIS)

    Vaquilla, I.; Barco, J.L. del; Ferron, J.

    1990-01-01

    The effect of temperature on the first stages of the superficial oxidation of polycrystalline titanium was studied using both Auger electron spectroscopy (AES) and emission shreshold (AEAPS). The number of compounds present on the surface was determined by application of the factor analysis technique. Reaction evolution was followed through the relative variation of Auger LMM and LMV transitions which are characteristic of titanium. Also the evolution of the chemical shift was determined by AEAPS. The amount of oxygen on the surface was quantified using transition KLL of oxygen. It was found that superficial oxidation depends on temperature. As much as three different compounds were determined according to substrate temperature and our exposure ranges. (Author). 7 refs., 5 figs

  14. Switched-capacitor isolated LED driver

    Science.gov (United States)

    Sanders, Seth R.; Kline, Mitchell

    2016-03-22

    A switched-capacitor voltage converter which is particularly well-suited for receiving a line voltage from which to drive current through a series of light emitting diodes (LEDs). Input voltage is rectified in a multi-level rectifier network having switched capacitors in an ascending-bank configuration for passing voltages in uniform steps between zero volts up to full received voltage V.sub.DC. A regulator section, operating on V.sub.DC, comprises switched-capacitor stages of H-bridge switching and flying capacitors. A current controlled oscillator drives the states of the switched-capacitor stages and changes its frequency to maintain a constant current to the load. Embodiments are described for isolating the load from the mains, utilizing an LC tank circuit or a multi-primary-winding transformer.

  15. Electric field mapping inside metallized film capacitors

    DEFF Research Database (Denmark)

    Nielsen, Dennis Achton; Popok, Vladimir; Pedersen, Kjeld

    2015-01-01

    (s) they suffered from accelerated testing. We have prepared film capacitors for analysis by micro-sectioning and verified the quality of the preparation procedure using optical and atomic force microscopy. The potential distribution in the layer structure (alternating 7 µm thick dielectric and 50-100 nm thick...... and durability and serves as verification that failure- and degradation mechanisms remain the same at different stress levels during accelerated testing. In this work we have used Kelvin probe force microscopy (KPFM) to analyze metallized film capacitors with the purpose of determining the degradation mechanism...... metal) of a new capacitor was used as reference. KPFM measurements on the degraded capacitors showed a change in contact potential difference from -0.61V on the reference capacitor to 3.2V on the degraded ones, indicating that corrosion of the metallization had happened. Studies also showed that some...

  16. Nitrogen-Doped Holey Graphene Film-Based Ultrafast Electrochemical Capacitors.

    Science.gov (United States)

    Zhou, Qinqin; Zhang, Miao; Chen, Ji; Hong, Jong-Dal; Shi, Gaoquan

    2016-08-17

    The commercialized aluminum electrolytic capacitors (AECs) currently used for alternating current (AC) line-filtering are usually the largest components in the electronic circuits because of their low specific capacitances and bulky sizes. Herein, nitrogen-doped holey graphene (NHG) films were prepared by thermal annealing the composite films of polyvinylpyrrolidone (PVP), graphene oxide (GO), and ferric oxide (Fe2O3) nanorods followed by chemical etching with hydrochloride acid. The typical electrochemical capacitor with NHG electrodes exhibited high areal and volumetric specific capacitances of 478 μF cm(-2) and 1.2 F cm(-3) at 120 Hz, ultrafast frequency response with a phase angle of -81.2° and a resistor-capacitor time constant of 203 μs at 120 Hz, as well as excellent cycling stability. Thus, it is promising to replace conventional AEC for AC line-filtering in miniaturized electronics.

  17. Laboratory-scale thyristor controlled series capacitor

    Energy Technology Data Exchange (ETDEWEB)

    Matsuki, J.; Ikeda, K.; Abe, M. [Kyoto University, Kyoto (Japan)

    1996-10-20

    This paper describes the results of an experimental study on the characteristics of a thyristor controlled series capacitor (TCSC). At present, there are two major thyristor controlled series compensation projects in the U.S.: the Kayenta ASC and the Slatt TCSC. However, there has been little operating experience and thus further understanding of the characteristics of TCSC is still to be sought. Therefore, a laboratory-scale TCSC was produced and installed in a laboratory power system. The impedance characteristics, waveshapes of voltages and currents in the TCSC circuit, and harmonics, for various thyristor firing angles, and insertion responses were measured and analyzed. In particular, effects of the size of the circuit components, i.e., parasitic resistance, additional damping resistance and series reactor, on the overall TCSC performances were investigated. The results were compared with EMTP simulations. 10 refs., 7 figs.

  18. Reliability of high-voltage pulse capacitors operating in large energy storages

    International Nuclear Information System (INIS)

    Kuchinskij, G.S.; Fedorova, V.S.; Shilin, O.V.

    1982-01-01

    To improve the reliability of pulse capacitors operating in capacitive energy storages, processes, resulting in break-down of capacitor insulation were investigated. A statistic model of failures was constructed and reliability of real capacitors, functioning at operating electric intensity Usub(oper) equal 70 kV/mm and at elevated intensity 90 kV/mm was calculated. Results of testing the IK50-ZU4 capacitor are given. The form of the capacitor service life distribution function was specified. To provide and confirm the assigned capacitor reliability, it is necessary to speed up tests at a higher voltage (1.3-1.5) Usub(oper). To improve the capacitor reliability, it is advisable to conduct acceptance tests, which include hold at increased constant voltage (1.3-1.5) Usub(oper) during 1-3 min and the effect of pulses of increased voltage (1.2-1.3) Usub(oper) with the pulse shape corresponding to operating conditions

  19. An innovative ultra-capacitor driven shape memory alloy actuator with an embedded control system

    International Nuclear Information System (INIS)

    Li, Peng; Song, Gangbing

    2014-01-01

    In this paper, an innovative ultra-capacitor driven shape memory alloy (SMA) actuator with an embedded control system is proposed targeting high power high-duty cycle SMA applications. The ultra-capacitor, which is capable of delivering massive amounts of instantaneous current in a compact dimension for high power applications, is chosen as the main component of the power supply. A specialized embedded system is designed from the ground up to control the ultra-capacitor driven SMA system. The control of the ultra-capacitor driven SMA is different from that of a regular constant voltage powered SMA system in that the energy and the voltage of the ultra-capacitor decrease as the system load increases. The embedded control system is also different from a computer-based control system in that it has limited computational power, and the control algorithm has to be designed to be simple while effective so that it can fit into the embedded system environment. The problem of a variable voltage power source induced by the use of the ultra-capacitor is solved by using a fuzzy PID (proportional integral and derivative) control. The method of using an ultra-capacitor to drive SMA actuators enabled SMA as a good candidate for high power high-duty cycle applications. The proposed embedded control system provides a good and ready-to-use solution for SMA high power applications. (paper)

  20. Impacts of oxidants in atomic layer deposition method on Al2O3/GaN interface properties

    Science.gov (United States)

    Taoka, Noriyuki; Kubo, Toshiharu; Yamada, Toshikazu; Egawa, Takashi; Shimizu, Mitsuaki

    2018-01-01

    The electrical interface properties of GaN metal-oxide-semiconductor (MOS) capacitors with an Al2O3 gate insulator formed by atomic layer deposition method using three kinds of oxidants were investigated by the capacitance-voltage technique, Terman method, and conductance method. We found that O3 and the alternate supply of H2O and O3 (AS-HO) are effective for reducing the interface trap density (D it) at the energy range of 0.15 to 0.30 eV taking from the conduction band minimum. On the other hand, we found that surface potential fluctuation (σs) induced by interface charges for the AS-HO oxidant is much larger than that for a Si MOS capacitor with a SiO2 layer formed by chemical vapor deposition despite the small D it values for the AS-HO oxidant compared with the Si MOS capacitor. This means that the total charged center density including the fixed charge density, charged slow trap density, and charged interface trap density for the GaN MOS capacitor is higher than that for the Si MOS capacitor. Therefore, σs has to be reduced to improve the performances and reliability of GaN devices with the Al2O3/GaN interfaces.

  1. Oxidation and crystal field effects in uranium

    Energy Technology Data Exchange (ETDEWEB)

    Tobin, J. G. [Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States); Booth, C. H. [Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States); Shuh, D. K. [Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States); van der Laan, G. [Diamond Light Source, Didcot (United Kingdom); Sokaras, D. [Stanford Synchrotron Radiation Lightsource, Stanford, CA (United States); Weng, T. -C. [Stanford Synchrotron Radiation Lightsource, Stanford, CA (United States); Yu, S. W. [Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States); Bagus, P. S. [Univ. of North Texas, Denton, TX (United States); Tyliszczak, T. [Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States); Nordlund, D. [Stanford Synchrotron Radiation Lightsource, Stanford, CA (United States)

    2015-07-06

    An extensive investigation of oxidation in uranium has been pursued. This includes the utilization of soft x-ray absorption spectroscopy, hard x-ray absorption near-edge structure, resonant (hard) x-ray emission spectroscopy, cluster calculations, and a branching ratio analysis founded on atomic theory. The samples utilized were uranium dioxide (UO2), uranium trioxide (UO3), and uranium tetrafluoride (UF4). As a result, a discussion of the role of non-spherical perturbations, i.e., crystal or ligand field effects, will be presented.

  2. High energy storage capacitor by embedding tunneling nano-structures

    Science.gov (United States)

    Holme, Timothy P; Prinz, Friedrich B; Van Stockum, Philip B

    2014-11-04

    In an All-Electron Battery (AEB), inclusions embedded in an active region between two electrodes of a capacitor provide enhanced energy storage. Electrons can tunnel to/from and/or between the inclusions, thereby increasing the charge storage density relative to a conventional capacitor. One or more barrier layers is present in an AEB to block DC current flow through the device. The AEB effect can be enhanced by using multi-layer active regions having inclusion layers with the inclusions separated by spacer layers that don't have the inclusions. The use of cylindrical geometry or wrap around electrodes and/or barrier layers in a planar geometry can enhance the basic AEB effect. Other physical effects that can be employed in connection with the AEB effect are excited state energy storage, and formation of a Bose-Einstein condensate (BEC).

  3. Effect of the Lithium Oxide Concentration on a Reduction of Lanthanide Oxides

    International Nuclear Information System (INIS)

    Choi, In-Kyu; Jeong, Myeong-Soo; Do, Jae-Bum; Seo, Chung-Seok

    2007-01-01

    The pyrochemical reduction process of spent oxide fuel is one of the options to handle spent PWR fuels in Korea. After spent oxide fuel is converted to a metallic form, fission products will be removed from the resultant uranium and higher actinide metals by an electrorefining process. The chemical behaviors of lanthanide oxides during the pyrochemical process has been extensively studied. It was also reported that about 30 to 50% of several lanthanide oxides were reduced to corresponding metals by an electrolytic reduction process having 1 wt% of a lithium oxide concentration. Korea Atomic Energy Research Institute (KAERI), however, has been used 3 wt% of lithium oxide to increase the applied current of the electrolytic reduction process. Though it was reported that U 3 O 8 was reduced to uranium metal having a high reduction yield at 3 wt% of the Li 2 O concentration, the effect of the lithium oxide concentration on the reduction of lanthanide oxides has not been clarified

  4. 2014 NEPP Tasks Update for Ceramic and Tantalum Capacitors

    Science.gov (United States)

    Teverovsky, Alexander A.

    2014-01-01

    Presentation describes recent development in research on MnO2, wet, and polymer tantalum capacitors. Low-voltage failures in multilayer ceramic capacitors and techniques to reveal precious metal electrode (PME) and base metal electrode (BME) capacitors with cracks are discussed. A voltage breakdown technique is suggested to select high quality low-voltage BME ceramic capacitors.

  5. Performance of AC/graphite capacitors at high weight ratios of AC/graphite

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Hongyu [IM and T Ltd., Advanced Research Center, Saga University, 1341 Yoga-machi, Saga 840-0047 (Japan); Yoshio, Masaki [Advanced Research Center, Department of Applied Chemistry, Saga University, 1341 Yoga-machi, Saga 840-0047 (Japan)

    2008-03-01

    The effect of negative to positive electrode materials' weight ratio on the electrochemical performance of both activated carbon (AC)/AC and AC/graphite capacitors has been investigated, especially in the terms of capacity and cycle-ability. The limited capacity charge mode has been proposed to improve the cycle performance of AC/graphite capacitors at high weight ratios of AC/graphite. (author)

  6. Physical and Electrical Characterization of Polymer Aluminum Capacitors

    Science.gov (United States)

    Liu, David; Sampson, Michael J.

    2010-01-01

    Polymer aluminum capacitors from several manufacturers with various combinations of capacitance, rated voltage, and ESR values were physically examined and electrically characterized. The physical construction analysis of the capacitors revealed three different capacitor structures, i.e., traditional wound, stacked, and laminated. Electrical characterization results of polymer aluminum capacitors are reported for frequency-domain dielectric response at various temperatures, surge breakdown voltage, and other dielectric properties. The structure-property relations in polymer aluminum capacitors are discussed.

  7. Physical and Electrical Characterization of Aluminum Polymer Capacitors

    Science.gov (United States)

    Liu, David; Sampson, Michael J.

    2010-01-01

    Polymer aluminum capacitors from several manufacturers with various combinations of capacitance, rated voltage, and ESR values were physically examined and electrically characterized. The physical construction analysis of the capacitors revealed three different capacitor structures, i.e., traditional wound, stacked, and laminated. Electrical characterization results of polymer aluminum capacitors are reported for frequency-domain dielectric response at various temperatures, surge breakdown voltage, and other dielectric properties. The structure-property relations in polymer aluminum capacitors are discussed.

  8. Effect of oxide ion concentration on the electrochemical oxidation of carbon in molten LiCl

    International Nuclear Information System (INIS)

    Yun, J. W.; Choi, I. K.; Park, Y. S.; Kim, W. H.

    2001-01-01

    The continuous measurement of lithium oxide concentration was required in DOR (Direct Oxide Reduction) process, which converts spent nuclear fuel to metal form, for the reactivity monitor and effective control of the process. The concentration of lithium oxide was measured by the electrochemical method, which was based on the phenomenon that carbon atoms of glassy carbon electrode electrochemically react with oxygen ions of lithium oxide in molten LiCl medium. From the results of electrode polarization experiments, the trend of oxidation rate of carbon atoms was classified into two different regions, which were proportional and non-proportional ones, dependent on the amount of lithium oxide. Below about 2.5 wt % Li 2 O, as the carbon atom ionization rate was fast enough for reacting with diffusing lithium oxide to the surface of carbon electrode. In this concentration range, the oxidation rate of carbon atoms was controlled by the diffusion of lithium oxide, and the concentration of lithium oxide could be measured by electrochemical method. But, above 2.5 wt % Li 2 O, the oxidation rate of carbon atoms was controlled by the applied electrochemical potential, because the carbon atom ionization rate was suppressed by the huge amounts of diffusing Li 2 O. Above this concentration, the electrochemical method was not applicable to determine the concentration of lithium oxide

  9. GeO{sub x} interfacial layer scavenging remotely induced by metal electrode in metal/HfO{sub 2}/GeO{sub x}/Ge capacitors

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Taehoon; Jung, Yong Chan; Seong, Sejong; Ahn, Jinho, E-mail: jhahn@hanyang.ac.kr [Department of Materials Science and Engineering, Hanyang University, Seoul 04763 (Korea, Republic of); Lee, Sung Bo [Department of Materials Science and Engineering and Research Institute of Advanced Materials (RIAM), Seoul National University, Seoul 08826 (Korea, Republic of); Park, In-Sung, E-mail: parkis77@hanyang.ac.kr [Department of Materials Science and Engineering, Hanyang University, Seoul 04763 (Korea, Republic of); Institute of Nano Science and Technology, Hanyang University, Seoul 04763 (Korea, Republic of)

    2016-07-11

    The metal gate electrodes of Ni, W, and Pt have been investigated for their scavenging effect: a reduction of the GeO{sub x} interfacial layer (IL) between HfO{sub 2} dielectric and Ge substrate in metal/HfO{sub 2}/GeO{sub x}/Ge capacitors. All the capacitors were fabricated using the same process except for the material used in the metal electrodes. Capacitance-voltage measurements, scanning transmission electron microscopy, and electron energy loss spectroscopy were conducted to confirm the scavenging of GeO{sub x} IL. Interestingly, these metals are observed to remotely scavenge the interfacial layer, reducing its thickness in the order of Ni, W, and then Pt. The capacitance equivalent thickness of these capacitors with Ni, W, and Pt electrodes are evaluated to be 2.7 nm, 3.0 nm, and 3.5 nm, and each final remnant physical thickness of GeO{sub x} IL layer is 1.1 nm 1.4 nm, and 1.9 nm, respectively. It is suggested that the scavenging effect induced by the metal electrodes is related to the concentration of oxygen vacancies generated by oxidation reaction at the metal/HfO{sub 2} interface.

  10. Low Dimensionality Effects in Complex Magnetic Oxides

    Science.gov (United States)

    Kelley, Paula J. Lampen

    Complex magnetic oxides represent a unique intersection of immense technological importance and fascinating physical phenomena originating from interwoven structural, electronic and magnetic degrees of freedom. The resulting energetically close competing orders can be controllably selected through external fields. Competing interactions and disorder represent an additional opportunity to systematically manipulate the properties of pure magnetic systems, leading to frustration, glassiness, and other novel phenomena while finite sample dimension plays a similar role in systems with long-range cooperative effects or large correlation lengths. A rigorous understanding of these effects in strongly correlated oxides is key to manipulating their functionality and device performance, but remains a challenging task. In this dissertation, we examine a number of problems related to intrinsic and extrinsic low dimensionality, disorder, and competing interactions in magnetic oxides by applying a unique combination of standard magnetometry techniques and unconventional magnetocaloric effect and transverse susceptibility measurements. The influence of dimensionality and disorder on the nature and critical properties of phase transitions in manganites is illustrated in La0.7 Ca0.3MnO3, in which both size reduction to the nanoscale and chemically-controlled quenched disorder are observed to induce a progressive weakening of the first-order nature of the transition, despite acting through the distinct mechanisms of surface effects and site dilution. In the second-order material La0.8Ca0.2MnO3, a strong magnetic field is found to drive the system toward its tricritical point as competition between exchange interactions in the inhomogeneous ground state is suppressed. In the presence of large phase separation stabilized by chemical disorder and long-range strain, dimensionality has a profound effect. With the systematic reduction of particle size in microscale-phase-separated (La, Pr

  11. Capacitor Voltages Measurement and Balancing in Flying Capacitor Multilevel Converters Utilizing a Single Voltage Sensor

    DEFF Research Database (Denmark)

    Farivar, Glen; Ghias, Amer M. Y. M.; Hredzak, Branislav

    2017-01-01

    This paper proposes a new method for measuring capacitor voltages in multilevel flying capacitor (FC) converters that requires only one voltage sensor per phase leg. Multiple dc voltage sensors traditionally used to measure the capacitor voltages are replaced with a single voltage sensor at the ac...... side of the phase leg. The proposed method is subsequently used to balance the capacitor voltages using only the measured ac voltage. The operation of the proposed measurement and balancing method is independent of the number of the converter levels. Experimental results presented for a five-level FC...

  12. Metallopolymer capacitor in "one pot" by self-directed UV-assisted process.

    Science.gov (United States)

    Ijeri, Vijaykumar S; Nair, Jijeesh R; Gerbaldi, Claudio; Bongiovanni, Roberta M; Penazzi, Nerino

    2010-11-01

    Silver metalized methacrylate films are prepared by single-step UV curing process with good conductivity on both sides. The major component of the composite is Bisphenol A ethoxylate dimethacrylate, which can be photopolymerized by a photoreactive initiator under UV light. Under the same conditions of UV irradiation, silver ions are deposited as metal nanoparticles while the pyrrole is oxidized to polypyrrole. The migration of silver ions and pyrrole toward both surfaces during polymerization leads to the formation of a metallo-polymer capacitor. The composite films are characterized by SEM-EDX and electrical measurements for possible applications as capacitors in flexible and/or nonplanar electronics.

  13. Graphene hydrogels deposited in nickel foams for high-rate electrochemical capacitors.

    Science.gov (United States)

    Chen, Ji; Sheng, Kaixuan; Luo, Peihui; Li, Chun; Shi, Gaoquan

    2012-08-28

    Graphene hydrogel/nickel foam composite electrodes for high-rate electrochemical capacitors are produced by reduction of an aqueous dispersion of graphene oxide in a nickel foam (upper half of figure). The micropores of the hydrogel are exposed to the electrolyte so that ions can enter and form electrochemical double-layers. The nickel framework shortens the distances of charge transfer. Therefore, the electrochemical capacitor exhibits highrate performance (see plots). Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  14. A Thermal Runaway Failure Model for Low-Voltage BME Ceramic Capacitors with Defects

    Science.gov (United States)

    Teverovsky, Alexander

    2017-01-01

    Reliability of base metal electrode (BME) multilayer ceramic capacitors (MLCCs) that until recently were used mostly in commercial applications, have been improved substantially by using new materials and processes. Currently, the inception of intrinsic wear-out failures in high quality capacitors became much greater than the mission duration in most high-reliability applications. However, in capacitors with defects degradation processes might accelerate substantially and cause infant mortality failures. In this work, a physical model that relates the presence of defects to reduction of breakdown voltages and decreasing times to failure has been suggested. The effect of the defect size has been analyzed using a thermal runaway model of failures. Adequacy of highly accelerated life testing (HALT) to predict reliability at normal operating conditions and limitations of voltage acceleration are considered. The applicability of the model to BME capacitors with cracks is discussed and validated experimentally.

  15. A measurement technique of time-dependent dielectric breakdown in MOS capacitors

    Science.gov (United States)

    Li, S. P.

    1974-01-01

    The statistical nature of time-dependent dielectric breakdown characteristics in MOS capacitors was evidenced by testing large numbers of capacitors fabricated on single wafers. A multipoint probe and automatic electronic visual display technique are introduced that will yield statistical results which are necessary for the investigation of temperature, electric field, thermal annealing, and radiation effects in the breakdown characteristics, and an interpretation of the physical mechanisms involved. It is shown that capacitors of area greater than 0.002 sq cm may yield worst-case results, and that a multipoint probe of capacitors of smaller sizes can be used to obtain a profile of nonuniformities in the SiO2 films.

  16. Physics Based Electrolytic Capacitor Degradation Models for Prognostic Studies under Thermal Overstress

    Science.gov (United States)

    Kulkarni, Chetan S.; Celaya, Jose R.; Goebel, Kai; Biswas, Gautam

    2012-01-01

    Electrolytic capacitors are used in several applications ranging from power supplies on safety critical avionics equipment to power drivers for electro-mechanical actuators. This makes them good candidates for prognostics and health management research. Prognostics provides a way to assess remaining useful life of components or systems based on their current state of health and their anticipated future use and operational conditions. Past experiences show that capacitors tend to degrade and fail faster under high electrical and thermal stress conditions that they are often subjected to during operations. In this work, we study the effects of accelerated aging due to thermal stress on different sets of capacitors under different conditions. Our focus is on deriving first principles degradation models for thermal stress conditions. Data collected from simultaneous experiments are used to validate the desired models. Our overall goal is to derive accurate models of capacitor degradation, and use them to predict performance changes in DC-DC converters.

  17. La doping effect on TZM alloy oxidation behavior

    International Nuclear Information System (INIS)

    Yang, Fan; Wang, Kuai-She; Hu, Ping; He, Huan-Cheng; Kang, Xuan-Qi; Wang, Hua; Liu, Ren-Zhi; Volinsky, Alex A.

    2014-01-01

    Highlights: • The oxidation can be resisted by doping La into TZM alloy. • La doped TZM alloy has more compact organization. • It can rise the starting temperature of severe oxidation reaction by more than 50 °C. • Effectively slow down the oxidation rate. • Provide guidance for experiments of improving high-temperature oxidation resistance. - Abstract: Powder metallurgy methods were utilized to prepare lanthanum-doped (La-TZM) and traditional TZM alloy plates. High temperature oxidation experiments along with the differential thermal analysis were employed to study the oxidation behavior of the two kinds of TZM alloys. An extremely volatile oxide layer was generated on the surface of traditional TZM alloy plates when the oxidation started. Molybdenum oxide volatilization exposed the alloy matrix, which was gradually corroded by oxygen, losing its quality with serious surface degradation. The La-TZM alloy has a more compact structure due to the lanthanum doping. The minute lanthanum oxide particles are pinned at the grain boundaries and refine the grains. Oxide layer generated on the matrix surface can form a compact coating, which effectively blocks the surface from being corroded by oxidation. The oxidation resistance of La-TZM alloys has been enhanced, expanding its application range

  18. High Energy Density Capacitors, Phase II

    Data.gov (United States)

    National Aeronautics and Space Administration — Capacitor size and reliability are often limiting factors in pulse power, high speed switching, and power management and distribution (PMAD) systems. T/J...

  19. High Energy Density Polymer Film Capacitors

    National Research Council Canada - National Science Library

    Boufelfel, Ali

    2006-01-01

    High-energy-density capacitors that are compact and light-weight are extremely valuable in a number of critical DoD systems that include portable field equipment, pulsed lasers, detection equipment...

  20. Single ICCII Sinusoidal Oscillators Employing Grounded Capacitors

    Directory of Open Access Journals (Sweden)

    J. W. Horng

    2011-09-01

    Full Text Available Two inverting second-generation current conveyors (ICCII based sinusoidal oscillators are presented. The first sinusoidal oscillator is composed of one ICCII, two grounded capacitors and two resistors. The oscillation condition and oscillation frequency can be orthogonally controllable. The second sinusoidal oscillator is composed of one ICCII, two grounded capacitors and three resistors. The oscillation condition and oscillation frequency can be independently controllable through different resistors.

  1. Cellulose triacetate, thin film dielectric capacitor

    Science.gov (United States)

    Yen, Shiao-Ping S. (Inventor); Jow, T. Richard (Inventor)

    1995-01-01

    Very thin films of cellulose triacetate are cast from a solution containing a small amount of high boiling temperature, non-solvent which evaporates last and lifts the film from the casting surface. Stretched, oriented, crystallized films have high electrical breakdown properties. Metallized films less than about 2 microns in thickness form self-healing electrodes for high energy density, pulsed power capacitors. Thicker films can be utilized as a dielectric for a capacitor.

  2. Transmission Line Resonator Segmented with Series Capacitors

    DEFF Research Database (Denmark)

    Zhurbenko, Vitaliy; Boer, Vincent; Petersen, Esben Thade

    2016-01-01

    Transmission line resonators are often used as coils in high field MRI. Due to distributed nature of such resonators, coils based on them produce inhomogeneous field. This work investigates application of series capacitors to improve field homogeneity along the resonator. The equations for optimal...... values of evenly distributed capacitors are presented. The performances of the segmented resonator and a regular transmission line resonator are compared....

  3. Capacitor blocks for linear transformer driver stages.

    Science.gov (United States)

    Kovalchuk, B M; Kharlov, A V; Kumpyak, E V; Smorudov, G V; Zherlitsyn, A A

    2014-01-01

    In the Linear Transformer Driver (LTD) technology, the low inductance energy storage components and switches are directly incorporated into the individual cavities (named stages) to generate a fast output voltage pulse, which is added along a vacuum coaxial line like in an inductive voltage adder. LTD stages with air insulation were recently developed, where air is used both as insulation in a primary side of the stages and as working gas in the LTD spark gap switches. A custom designed unit, referred to as a capacitor block, was developed for use as a main structural element of the transformer stages. The capacitor block incorporates two capacitors GA 35426 (40 nF, 100 kV) and multichannel multigap gas switch. Several modifications of the capacitor blocks were developed and tested on the life time and self breakdown probability. Blocks were tested both as separate units and in an assembly of capacitive module, consisting of five capacitor blocks. This paper presents detailed design of capacitor blocks, description of operation regimes, numerical simulation of electric field in the switches, and test results.

  4. Observation of turnover of spontaneous polarization in ferroelectric layer of pentacene/poly-(vinylidene-trifluoroethylene) double-layer capacitor under photo illumination by optical second-harmonic generation measurement

    Science.gov (United States)

    Shi, Zhemin; Taguchi, Dai; Manaka, Takaaki; Iwamoto, Mitsumasa

    2016-04-01

    The details of turnover process of spontaneous polarization and associated carrier motions in indium-tin oxide/poly-(vinylidene-trifluoroethylene)/pentacene/Au capacitor were analyzed by coupling displacement current measurement (DCM) and electric-field-induced optical second-harmonic generation (EFISHG) measurement. A model was set up from DCM results to depict the relationship between electric field in semiconductor layer and applied external voltage, proving that photo illumination effect on the spontaneous polarization process lied in variation of semiconductor conductivity. The EFISHG measurement directly and selectively probed the electric field distribution in semiconductor layer, modifying the model and revealing detailed carrier behaviors involving photo illumination effect, dipole reversal, and interfacial charging in the device. A further decrease of DCM current in the low voltage region under illumination was found as the result of illumination effect, and the result was argued based on the changing of the total capacitance of the double-layer capacitors.

  5. Observation of turnover of spontaneous polarization in ferroelectric layer of pentacene/poly-(vinylidene-trifluoroethylene) double-layer capacitor under photo illumination by optical second-harmonic generation measurement

    Energy Technology Data Exchange (ETDEWEB)

    Shi, Zhemin [State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Technology, Tsinghua University, Beijing 100084 (China); Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152-8552 (Japan); Taguchi, Dai; Manaka, Takaaki; Iwamoto, Mitsumasa, E-mail: iwamoto@pe.titech.ac.jp [Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152-8552 (Japan)

    2016-04-28

    The details of turnover process of spontaneous polarization and associated carrier motions in indium-tin oxide/poly-(vinylidene-trifluoroethylene)/pentacene/Au capacitor were analyzed by coupling displacement current measurement (DCM) and electric-field-induced optical second-harmonic generation (EFISHG) measurement. A model was set up from DCM results to depict the relationship between electric field in semiconductor layer and applied external voltage, proving that photo illumination effect on the spontaneous polarization process lied in variation of semiconductor conductivity. The EFISHG measurement directly and selectively probed the electric field distribution in semiconductor layer, modifying the model and revealing detailed carrier behaviors involving photo illumination effect, dipole reversal, and interfacial charging in the device. A further decrease of DCM current in the low voltage region under illumination was found as the result of illumination effect, and the result was argued based on the changing of the total capacitance of the double-layer capacitors.

  6. Protective systems and its protective switching elements on local failures of large slow-capacitor bank system

    International Nuclear Information System (INIS)

    Hasegawa, Mitsuo; Inoue, Kunikazu; Ueno, Isao.

    1994-01-01

    In various applications of pulsed power technologies, large capacitor bank systems are used to feed high current impulse to different experimental devices. The accidental electric breakdown in one of the capacitors in a parallel connection of the large bank may result in serious damages such as mechanical explosion and oil effusion or fire. In most fast banks, each unit capacitor has an output gap switch, which is expected to decouple the capacitors one another. However, no such special element is adopted usually in the slow bank system, partly because of the economical consideration. We have developed a novel and inexpensive protective element for these relatively slow capacitor banks, utilizing a concept of the enclosed type of the fast breakers. The principle of the operation of the protection elements is verified by a simulation experiment. Their practical effectiveness is also successfully demonstrated in the application to the system of the pulsed high magnetic field generator. (author)

  7. A Cell-to-Cell Equalizer Based on Three-Resonant-State Switched-Capacitor Converters for Series-Connected Battery Strings

    Directory of Open Access Journals (Sweden)

    Yunlong Shang

    2017-02-01

    Full Text Available Due to the low cost, small size, and ease of control, the switched-capacitor (SC battery equalizers are promising among active balancing methods. However, it is difficult to achieve the full cell equalization for the SC equalizers due to the inevitable voltage drops across Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET switches. Moreover, when the voltage gap among cells is larger, the balancing efficiency is lower, while the balancing speed becomes slower as the voltage gap gets smaller. In order to soften these downsides, this paper proposes a cell-to-cell battery equalization topology with zero-current switching (ZCS and zero-voltage gap (ZVG among cells based on three-resonant-state SC converters. Based on the conventional inductor-capacitor (LC converter, an additional resonant path is built to release the charge of the capacitor into the inductor in each switching cycle, which lays the foundations for obtaining ZVG among cells, improves the balancing efficiency at a large voltage gap, and increases the balancing speed at a small voltage gap. A four-lithium-ion-cell prototype is applied to validate the theoretical analysis. Experiment results demonstrate that the proposed topology has good equalization performances with fast equalization, ZCS, and ZVG among cells.

  8. Observation of band bending of metal/high-k Si capacitor with high energy x-ray photoemission spectroscopy and its application to interface dipole measurement

    Science.gov (United States)

    Kakushima, K.; Okamoto, K.; Tachi, K.; Song, J.; Sato, S.; Kawanago, T.; Tsutsui, K.; Sugii, N.; Ahmet, P.; Hattori, T.; Iwai, H.

    2008-11-01

    Band bendings of Si substrates have been observed using hard x-ray photoemission spectroscopy. With a capability of collecting photoelectrons generated as deep as 40 nm, the binding energy shift in a core level caused by the potential profile at the surface of the substrate results in a spectrum broadening. The broadening is found to be significant when heavily doped substrates are used owing to its steep potential profile. The surface potential of the substrate can be obtained by deconvolution of the spectrum. This method has been applied to observe the band bending profile of metal-oxide-semiconductor capacitors with high-k gate dielectrics. By comparing the band bending profiles of heavily-doped n+- and p+-Si substrates, the interface dipoles presented at interfaces can be estimated. In the case of W gated La2O3/La-silicate capacitor, an interface dipole to shift the potential of -0.45 V has been estimated at La-silicate/Si interface, which effectively reduces the apparent work function of W. On the other hand, an interface dipole of 0.03-0.07 V has been found to exist at Hf-silicate/SiO2 interface for W gated HfO2/Hf-silicate/SiO2 capacitor.

  9. A novel technique to measure interface trap density in a GaAs MOS capacitor using time-varying magnetic fields

    Energy Technology Data Exchange (ETDEWEB)

    Choudhury, Aditya N. Roy, E-mail: aditya@physics.iisc.ernet.in; Venkataraman, V. [Dept. of Physics, Indian Institute of Science, Bangalore – 560012 (India)

    2016-05-23

    Interface trap density (D{sub it}) in a GaAs metal-oxide-semiconductor (MOS) capacitor can be measured electrically by measuring its impedance, i.e. by exciting it with a small signal voltage source and measuring the resulting current through the circuit. We propose a new method of measuring D{sub it} where the MOS capacitor is subjected to a (time-varying) magnetic field instead, which produces an effect equivalent to a (time-varying) voltage drop across the sample. This happens because the electron chemical potential of GaAs changes with a change in an externally applied magnetic field (unlike that of the gate metal); this is not the voltage induced by Faraday’s law of electromagnetic induction. So, by measuring the current through the MOS, D{sub it} can be found similarly. Energy band diagrams and equivalent circuits of a MOS capacitor are drawn in the presence of a magnetic field, and analyzed. The way in which a magnetic field affects a MOS structure is shown to be fundamentally different compared to an electrical voltage source.

  10. Characterization and organic electric-double-layer-capacitor application of KOH activated coal-tar-pitch-based carbons: Effect of carbonization temperature

    Science.gov (United States)

    Choi, Poo Reum; Lee, Eunji; Kwon, Soon Hyung; Jung, Ji Chul; Kim, Myung-Soo

    2015-12-01

    The present study reports the influence of pre-carbonization on the properties of KOH-activated coal tar pitch (CTP). The change of crystallinity and pore structure of pre-carbonized CTPs as well as their activated carbons (ACs) as function of pre-carbonization temperature are investigated. The crystallinity of pre-carbonized CTPs increases with increasing the carbonization temperature up to 600 °C, but a disorder occurs during the carbonization around 700 °C and an order happens gradually with increasing the carbonization temperatures in range of 800-1000 °C. The CTPs pre-carbonized at high temperatures are more difficult to be activated with KOH than those pre-carbonized at low temperatures due to the increase of micro-crystalline size and the decrease of surface functional groups. The micro-pores and meso-pores are well developed at around 1.0 nm and 2.4 nm, respectively, as the ACs are pre-carbonized at temperatures of 500-600 °C, exhibiting high specific capacitances as electrode materials for electric double layer capacitor (EDLC). Although the specific surface area (SSA) and pore volume of ACs pre-carbonized at temperatures of 900-1000 °C are extraordinary low (non-porous) as compared to those of AC pre-carbonized at 600 °C, their specific capacitances are comparable to each other. The large specific capacitances with low SSA ACs can be attributed to the structural change resulting from the electrochemical activation during the 1st charge above 2.0 V.

  11. Effect of backbond oxidation on silicon nanocrystallites

    International Nuclear Information System (INIS)

    Ramos, L.E.; Furthmueller, J.; Bechstedt, F.

    2004-01-01

    We employ density functional calculations to study properties of Si nanocrystals after backbond oxidation in comparison to the ones passivated with hydrogen or hydroxyl. Structural parameters, pair excitation energies, quasiparticle gaps, and electrostatic potentials vary significantly in dependence on degree of oxidation and surface passivation. The variations are discussed within a quantum confinement picture. Blueshifts and redshifts observed in photoluminescence are related to the size of the Si nanocrystallite cores and the oxygen incorporation via passivation with group OH or oxidation

  12. Random Vibration Testing of Advanced Wet Tantalum Capacitors

    Science.gov (United States)

    Teverovsky, Alexander

    2015-01-01

    Advanced wet tantalum capacitors allow for improved performance of power supply systems along with substantial reduction of size and weight of the systems that is especially beneficial for space electronics. Due to launch-related stresses, acceptance testing of all space systems includes random vibration test (RVT). However, many types of advanced wet tantalum capacitors cannot pass consistently RVT at conditions specified in MIL-PRF-39006, which impedes their use in space projects. This requires a closer look at the existing requirements, modes and mechanisms of failures, specifics of test conditions, and acceptance criteria. In this work, different lots of advanced wet tantalum capacitors from four manufacturers have been tested at step stress random vibration conditions while their currents were monitored before, during, and after the testing. It has been shown that the robustness of the parts and their reliability are mostly due to effective self-healing processes and limited current spiking or minor scintillations caused by RVT do not increase the risk of failures during operation. A simple model for scintillations events has been used to simulate current spiking during RVT and optimize test conditions. The significance of scintillations and possible effects of gas generation have been discussed and test acceptance criteria for limited current spiking have been suggested.

  13. Physics of failure based analysis of aluminium electrolytic capacitor

    International Nuclear Information System (INIS)

    Sahoo, Satya Ranjan; Behera, S.K.; Kumar, Sachin; Varde, P.V.; Ravi Kumar, G.

    2016-01-01

    Electrolytic capacitors are one of the important devices in various power electronic systems, such as motor drives, uninterruptible power supply, electric vehicles and dc power supply. Electrolytic capacitors are also the integral part of many other electronic devices. One of the primary function of electrolytic capacitors is the smoothing of voltage ripple and storing electrical energy. However, the electrolytic capacitor has the shortest lifespan of components in power electronics. Past experiences show that electrolytic capacitor tends to degrade and fail faster under high electrical or thermal stress conditions during operations. The primary failure mechanism of an electrolytic capacitor is the evaporation of the electrolyte due to electrical or thermal overstress. This leads to the drift in the values of two important parameters-capacitance and equivalent series resistance (ESR) of the electrolytic capacitor. An attempt has been made to age the electrolytic capacitor and validate the results. The overall goal is to derive the accurate degradation model of the electrolytic capacitor. (author)

  14. Simulation of electron transmittance and tunnel current in n{sup +} Poly-Si/HfSiO{sub x}N/Trap/SiO{sub 2}/Si(100) capacitors using analytical and numerical approaches

    Energy Technology Data Exchange (ETDEWEB)

    Noor, Fatimah A., E-mail: fatimah@fi.itb.ac.id; Iskandar, Ferry; Abdullah, Mikrajuddin; Khairurrijal [Physics of Electronic Materials Research Division Faculty of Mathematics and Natural Sciences, Institut Teknologi Bandung Jalan Ganesa 10, Bandung 40132 (Indonesia)

    2015-04-16

    In this paper, we discuss the electron transmittance and tunneling current in high-k-based-MOS capacitors with trapping charge by including the off-diagonal effective-mass tensor elements and the effect of coupling between transverse and longitudinal energies represented by an electron velocity in the gate. The HfSiO{sub x}N/SiO{sub 2} dual ultrathin layer is used as the gate oxide in an n{sup +} poly- Si/oxide/Si capacitor to replace SiO{sub 2}. The main problem of using HfSiO{sub x}N is the charge trapping formed at the HfSiO{sub x}N/SiO{sub 2} interface that can influence the performance of the device. Therefore, it is important to develop a model taking into account the presence of electron traps at the HfSiO{sub x}N/SiO{sub 2} interface in the electron transmittance and tunneling current. The transmittance and tunneling current in n{sup +} poly- Si/HfSiO{sub x}N/trap/SiO2/Si(100) capacitors are calculated by using Airy wavefunctions and a transfer matrix method (TMM) as analytical and numerical approaches, respectively. The transmittance and tunneling current obtained from the Airy wavefunction are compared to those computed by the TMM. The effects of the electron velocity on the transmittance and tunneling current are also discussed.

  15. Reliability assessment for metallized film pulse capacitors with accelerated degradation test

    International Nuclear Information System (INIS)

    Zhao Jianyin; Liu Fang; Xi Wenjun; He Shaobo; Wei Xiaofeng

    2011-01-01

    The high energy density self-healing metallized film pulse capacitor has been applied to all kinds of laser facilities for their power conditioning systems, whose reliability is straightforward affected by the reliability level of capacitors. Reliability analysis of highly reliable devices, such as metallized film capacitors, is a challenge due to cost and time restriction. Accelerated degradation test provides a way to predict its life cost and time effectively. A model and analyses for accelerated degradation data of metallized film capacitors are described. Also described is a method for estimating the distribution of failure time. The estimation values of the unknown parameters in this model are 9.066 9 x 10 -8 and 0.022 1. Both the failure probability density function (PDF) and the cumulative distribution function (CDF) can be presented by this degradation failure model. Based on these estimation values and the PDF/CDF, the reliability model of the metallized film capacitors is obtained. According to the reliability model, the probability of the capacitors surviving to 20 000 shot is 0.972 4. (authors)

  16. Capacitor current feedback for output filter damping in switched-mode magnet power supplies

    International Nuclear Information System (INIS)

    Paven Kumar, M.R.; Kim, J.M.S.

    1994-01-01

    In magnet power supplies for a particle accelerator system, a second-order low-pass filter is used to reduce the output current ripple content within specifications. The output filter must be properly damped in order to avoid any large amplification at the resonant frequency and large transient responses of voltages and currents at the step change of the line voltage. Conventionally, a series combination of resistance and capacitance is added in parallel with the filter capacitor to provide the required damping. This approach, however, requires a large dc-blocking capacitor which has to be several times larger than the filter capacitor. In this paper, a filter damping technique using capacitor current feedback is presented. The basic concept of the capacitor current feedback is established using a linear model of the converter involved, and then a sampled-data model of the converter is used to analyze the filter damping technique. The filter damping effect of the capacitor current feedback is verified experimentally

  17. Development and experimental study of oil-free capacitor module for plasma focus device

    Science.gov (United States)

    Sharma, Ravindra Kumar; Sharma, Archana

    2017-03-01

    This development is concerned with the compact capacitor module for a plasma focus device. Oil-free, non-standard geometry capacitors are designed and developed for high current delivery in sub-microseconds time. Metalized dielectric film based pulse capacitor becomes progressively less viable at currents above 10 kA. It is due to reliability and energy scaling difficulties, based on effects such as vaporization, high resistivity, and end connection. Bipolar electrolytic capacitors are also not preferred due to their limited life and comparatively low peak current delivery. Bi-axially oriented polypropylene (BOPP) film with extended aluminum foil is a combination to deliver moderately high power. But, electrically weak points, relative permittivity, and the edge gap margins have made its adoption difficult. A concept has been developed in lab for implementing the above combination in a less complex and costly manner. This paper concerns the development and testing process techniques for quite different hollow cylindrical, oil-free capacitors (4 μ F , 10 kV, 20 nH). Shot life of 1000 has been experimentally performed on the test bed at its rated energy density level. The technological methods and engineering techniques are now available and utilized for manufacturing and testing of BOPP film based oil-free capacitors.

  18. Method of manufacturing a capacitor on a nanowire and integrated circuit having such a capacitor

    NARCIS (Netherlands)

    2009-01-01

    A method of manufacturing a capacitor on a wafer, and an IC comprising such a capacitor is disclosed. The method comprises forming a plurality of vertical structures (140) each having a sub-micron thickness on the wafer; and growing a metal-insulator-metal (MIM) stack (150) over the plurality of

  19. Nanostructure multilayer dielectric materials for capacitors and insulators

    Science.gov (United States)

    Barbee, Jr., Troy W.; Johnson, Gary W.

    1998-04-21

    A capacitor is formed of at least two metal conductors having a multilayer dielectric and opposite dielectric-conductor interface layers in between. The multilayer dielectric includes many alternating layers of amorphous zirconium oxide (ZrO.sub.2) and alumina (Al.sub.2 O.sub.3). The dielectric-conductor interface layers are engineered for increased voltage breakdown and extended service life. The local interfacial work function is increased to reduce charge injection and thus increase breakdown voltage. Proper material choices can prevent electrochemical reactions and diffusion between the conductor and dielectric. Physical vapor deposition is used to deposit the zirconium oxide (ZrO.sub.2) and alumina (Al.sub.2 O.sub.3) in alternating layers to form a nano-laminate.

  20. Nivalenol induces oxidative stress and increases deoxynivalenol pro-oxidant effect in intestinal epithelial cells

    Energy Technology Data Exchange (ETDEWEB)

    Del Regno, Marisanta; Adesso, Simona; Popolo, Ada [Department of Pharmacy, School of Pharmacy, University of Salerno, Via Giovanni Paolo II, 132–84084 Fisciano, Salerno (Italy); Quaroni, Andrea [Department of Biomedical Sciences, Cornell University, Veterinary Research Tower, Cornell University, Ithaca, NY 14853–6401 (United States); Autore, Giuseppina [Department of Pharmacy, School of Pharmacy, University of Salerno, Via Giovanni Paolo II, 132–84084 Fisciano, Salerno (Italy); Severino, Lorella [Department of Pathology and Animal Health, Division of Toxicology, School of Veterinary Medicine, University of Naples “Federico II”, Via Delpino 1, 80137 Naples (Italy); Marzocco, Stefania, E-mail: smarzocco@unisa.it [Department of Pharmacy, School of Pharmacy, University of Salerno, Via Giovanni Paolo II, 132–84084 Fisciano, Salerno (Italy)

    2015-06-01

    Mycotoxins are secondary fungal metabolites often found as contaminants in almost all agricultural commodities worldwide, and the consumption of food or feed contaminated by mycotoxins represents a major risk for human and animal health. Reactive oxygen species are normal products of cellular metabolism. However, disproportionate generation of reactive oxygen species poses a serious problem to bodily homeostasis and causes oxidative tissue damage. In this study we analyzed the effect of two trichothecenes mycotoxins: nivalenol and deoxynivalenol, alone and in combination, on oxidative stress in the non-tumorigenic intestinal epithelial cell line IEC-6. Our results indicate the pro-oxidant nivalenol effect in IEC-6, the stronger pro-oxidant effect of nivalenol when compared to deoxynivalenol and, interestingly, that nivalenol increases deoxynivalenol pro-oxidative effects. Mechanistic studies indicate that the observed effects were mediated by NADPH oxidase, calcium homeostasis alteration, NF-kB and Nrf2 pathways activation and by iNOS and nitrotyrosine formation. The toxicological interaction by nivalenol and deoxynivalenol reported in this study in IEC-6, points out the importance of the toxic effect of these mycotoxins, mostly in combination, further highlighting the risk assessment process of these toxins that are of growing concern. - Highlights: • Nivalenol induces oxidative stress in intestinal epithelial cells (IECs). • Nivalenol increases deoxynivalenol pro-oxidant effects in IECs. • Nivalenol and deoxynivalenol trigger antioxidant response IECs. • These results indicate the importance of mycotoxins co-contamination.

  1. Interactions of silica with iron oxides: Effects on oxide transformations and sorption properties

    Energy Technology Data Exchange (ETDEWEB)

    Taylor, P

    1995-08-01

    This report is a review of the literature on the adsorption of silica species on iron oxides and oxyhydroxides, and its effects on the adsorption of other species and on oxide interconversion reactions. The information is discussed briefly in the contexts of nuclear waste disposal and boiler-water chemistry. (author). 76 refs.

  2. Interactions of silica with iron oxides: Effects on oxide transformations and sorption properties

    International Nuclear Information System (INIS)

    Taylor, P.

    1995-08-01

    This report is a review of the literature on the adsorption of silica species on iron oxides and oxyhydroxides, and its effects on the adsorption of other species and on oxide interconversion reactions. The information is discussed briefly in the contexts of nuclear waste disposal and boiler-water chemistry. (author). 76 refs

  3. A review of molecular modelling of electric double layer capacitors.

    Science.gov (United States)

    Burt, Ryan; Birkett, Greg; Zhao, X S

    2014-04-14

    Electric double-layer capacitors are a family of electrochemical energy storage devices that offer a number of advantages, such as high power density and long cyclability. In recent years, research and development of electric double-layer capacitor technology has been growing rapidly, in response to the increasing demand for energy storage devices from emerging industries, such as hybrid and electric vehicles, renewable energy, and smart grid management. The past few years have witnessed a number of significant research breakthroughs in terms of novel electrodes, new electrolytes, and fabrication of devices, thanks to the discovery of innovative materials (e.g. graphene, carbide-derived carbon, and templated carbon) and the availability of advanced experimental and computational tools. However, some experimental observations could not be clearly understood and interpreted due to limitations of traditional theories, some of which were developed more than one hundred years ago. This has led to significant research efforts in computational simulation and modelling, aimed at developing new theories, or improving the existing ones to help interpret experimental results. This review article provides a summary of research progress in molecular modelling of the physical phenomena taking place in electric double-layer capacitors. An introduction to electric double-layer capacitors and their applications, alongside a brief description of electric double layer theories, is presented first. Second, molecular modelling of ion behaviours of various electrolytes interacting with electrodes under different conditions is reviewed. Finally, key conclusions and outlooks are given. Simulations on comparing electric double-layer structure at planar and porous electrode surfaces under equilibrium conditions have revealed significant structural differences between the two electrode types, and porous electrodes have been shown to store charge more efficiently. Accurate electrolyte and

  4. Modulation of Molecular Flux Using a Graphene Nanopore Capacitor.

    Science.gov (United States)

    Shankla, Manish; Aksimentiev, Aleksei

    2017-04-20

    Modulation of ionic current flowing through nanoscale pores is one of the fundamental biological processes. Inspired by nature, nanopores in synthetic solid-state membranes are being developed to enable rapid analysis of biological macromolecules and to serve as elements of nanofludic circuits. Here, we theoretically investigate ion and water transport through a graphene-insulator-graphene membrane containing a single, electrolyte-filled nanopore. By means of all-atom molecular dynamics simulations, we show that the charge state of such a graphene nanopore capacitor can regulate both the selectivity and the magnitude of the nanopore ionic current. At a fixed transmembrane bias, the ionic current can be switched from being carried by an equal mixture of cations and anions to being carried almost exclusively by either cationic or anionic species, depending on the sign of the charge assigned to both plates of the capacitor. Assigning the plates of the capacitor opposite sign charges can either increase the nanopore current or reduce it substantially, depending on the polarity of the bias driving the transmembrane current. Facilitated by the changes of the nanopore surface charge, such ionic current modulations are found to occur despite the physical dimensions of the nanopore being an order of magnitude larger than the screening length of the electrolyte. The ionic current rectification is accompanied by a pronounced electro-osmotic effect that can transport neutral molecules such as proteins and drugs across the solid-state membrane and thereby serve as an interface between electronic and chemical signals.

  5. Electric converters of electromagnetic strike machine with capacitor supply

    Science.gov (United States)

    Usanov, K. M.; Volgin, A. V.; Kargin, V. A.; Moiseev, A. P.; Chetverikov, E. A.

    2018-03-01

    The application of pulse linear electromagnetic engines in small power strike machines (energy impact is 0.01...1.0 kJ), where the characteristic mode of rare beats (pulse seismic vibrator, the arch crash device bins bulk materials), is quite effective. At the same time, the technical and economic performance of such machines is largely determined by the ability of the power source to provide a large instantaneous power of the supply pulses in the winding of the linear electromagnetic motor. The use of intermediate energy storage devices in power systems of rare-shock LEME makes it possible to obtain easily large instantaneous powers, forced energy conversion, and increase the performance of the machine. A capacitor power supply of a pulsed source of seismic waves is proposed for the exploration of shallow depths. The sections of the capacitor storage (CS) are connected to the winding of the linear electromagnetic motor by thyristor dischargers, the sequence of activation of which is determined by the control device. The charge of the capacitors to the required voltage is made directly from the battery source, or through the converter from a battery source with a smaller number of batteries.

  6. The effect of grape-skin extract on oxidative status

    DEFF Research Database (Denmark)

    Young, J. F.; Dragsted, L. O.; Daneshvar, B.

    2000-01-01

    dismutase or catalase. Likewise, no effect was found on 2-aminoadipic semialdehyde (AAS) residues, a plasma protein oxidation product, or on malondialdehyde in plasma or in LDL, which are markers of lipoprotein oxidation. A marginal effect of grape-skin intervention was observed on plasma ascorbate levels...

  7. High energy density capacitors fabricated by thin film technology

    International Nuclear Information System (INIS)

    Barbee, T W; Johnson, G W; Wagner, A V.

    1999-01-01

    Low energy density in conventional capacitors severely limits efforts to miniaturize power electronics and imposes design limitations on electronics in general. We have successfully applied physical vapor deposition technology to greatly increase capacitor energy density. The high dielectric breakdown strength we have achieved in alumina thin films allows high energy density to be achieved with this moderately low dielectric constant material. The small temperature dependence of the dielectric constant, and the high reliability, high resistivity, and low dielectric loss of Al 2 O 3 , make it even more appealing. We have constructed single dielectric layer thin film capacitors and shown that they can be stacked to form multilayered structures with no loss in yield for a given capacitance. Control of film growth morphology is critical for achieving the smooth, high quality interfaces between metal and dielectric necessary for device operation at high electric fields. Most importantly, high rate deposition with extremely low particle generation is essential for achieving high energy storage at a reasonable cost. This has been achieved by reactive magnetron sputtering in which the reaction to form the dielectric oxide has been confined to the deposition surface. By this technique we have achieved a yield of over 50% for 1 cm 2 devices with an energy density of 14 J per cubic centimeter of Al 2 O 3 dielectric material in 1.2 kV, 4 nF devices. By further reducing defect density and increasing the dielectric constant of the material, we will be able to increase capacitance and construct high energy density devices to meet the requirements of applications in power electronics

  8. High-performance free-standing capacitor electrodes of multilayered Co9S8 plates wrapped by carbonized poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate)/reduced graphene oxide

    Science.gov (United States)

    Yao, Tinghui; Li, Yali; Liu, Dequan; Gu, Yipeng; Qin, Shengchun; Guo, Xin; Guo, Hui; Ding, Yongqiang; Liu, Qiming; Chen, Qiang; Li, Junshuai; He, Deyan

    2018-03-01

    In this paper, a free-standing electrode structure composed of multilayered Co9S8 plates wrapped by carbonized poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate)/reduced graphene oxide (PEDOT:PSS/rGO) layers is introduced. Excellent supercapacitive behaviors, especially long cycling stability at high current densities are delivered owing to the synergetic effects of stable electrical contact between the active material and carbonized PEDOT:PSS/rGO due to the wrapped configuration, efficient charge exchange between the multilayered Co9S8 plates and electrolyte, improved electrical conductance by rGO, and plenty of voids for accommodating volume changes. For the optimized electrode (starting materials: 0.5 mL PEDOT:PSS, 1.0 mL GO (6.0 mg mL-1) and 10.0 mg Co(OH)2), a specific capacitance of about 788.9 F g-1 at 1.0 A g-1 and good cycling stability of over 100% of the initial capacitance (∼488.6 F g-1) after 10000 cycles at a current density of 15.0 A g-1 can be achieved. The assembled asymmetric supercapacitor based on the optimized electrode//active carbon exhibits an energy density of ∼19.6 Wh kg-1 at a power density of 400.9 W kg-1.

  9. Fast risetime one megajoule capacitor bank

    International Nuclear Information System (INIS)

    Markins, D.; Baker, W.L.; Reinovsky, R.E.; Clark, J.G.

    1976-01-01

    A 100 kV, 1.1 MJ capacitor bank for plasma research experiments has been constructed for the Air Force Weapons Laboratory. The system consists of twenty, individual, low inductance capacitor modules, each utilizing a four element switch package approximately 2 meters wide. Each module contains twenty-four ''scyllac'' type 1.85 μF capacitors. A 100 kV output pulse is obtained by charging the top half of each module to +50 kV and the bottom half to -50 kV. A pressurized, low inductance multichannel switch package incorporating four separately triggered elements is designed to fit into the parallel plate transmission line system of the capacitor module. The bank is configured in a cross shape with twenty modules spaced uniformly around the perimeter of a parallel plate transmission line. The transmission line is constructed with 32 mil aluminum and insulated with 60 mils of mylar. The bank is designed to feed an easily replaceable central coaxial load. The entire system has been repeatedly fired at 100 kV with a dummy resistive load and has delivered 2.2 x 10 7 amperes of current with a risetime of 1.1 μsec. The total measured system inductance is 2.2 nH. This system represents a significant advance in the development of reliable, fast, high current capacitor banks

  10. Graphene/VO2 hybrid material for high performance electrochemical capacitor

    International Nuclear Information System (INIS)

    Deng, Lingjuan; Zhang, Gaini; Kang, Liping; Lei, Zhibin; Liu, Chunling; Liu, Zong-Huai

    2013-01-01

    Graphical abstract: Graphene/VO 2 hybrid materials are prepared by one-step simultaneous hydrothermal reduction technology. The prepared graphene (1.0)/VO 2 hybrid material shows a specific capacitances of 225 F g −1 in 0.5 mol L −1 K 2 SO 4 solution. Furthermore, an asymmetric electrochemical capacitor with graphene (1.0)/VO 2 as a positive electrode and graphene as a negative electrode is assembled, and it can work in a cell voltage of 1.7 V and show excellent capacitive property. - Highlights: • Graphene/VO 2 hybrid material has been prepared by one-step hydrothermal reduction. • Graphene/VO 2 hybrid material exhibits high specific capacitance. • An asymmetric capacitor working at 1.7 V in aqueous solution is assembled based on graphene/VO 2 electrode. • The asymmetric capacitor exhibits high energy density. - Abstract: Vanadium oxides have attracted significant attention for electrochemical capacitor because of their extensive multifunctional properties. In the present work, graphene/VO 2 (RG/VO 2 ) hybrid materials with different RG amounts are prepared in a mixture of ammonium vanadate, formic acid and graphite oxide (GO) nanosheets by one-step simultaneous hydrothermal reduction technology. The hydrothermal treatment makes the reduction of GO into RG and the formation of VO 2 particles with starfruit morphology. The starfruit-like VO 2 particles are uniformly embedded in the hole constructed by RG nanosheets, which makes the electrode–electrolyte contact better. A high specific capacitance of 225 F g −1 has been achieved for RG(1.0)/VO 2 electrode with RG content of 26 wt% in 0.5 mol L −1 K 2 SO 4 electrolyte. An asymmetrical electrochemical capacitor is assembled by using RG(1.0)/VO 2 as positive electrode and RG as negative electrode, and it can be reversibly charged–discharged at a cell voltage of 1.7 V in 0.5 mol L −1 K 2 SO 4 electrolyte. The asymmetrical capacitor can deliver an energy density of 22.8 Wh kg −1 at a power density

  11. Effects of trace volatile organic compounds on methane oxidation

    Directory of Open Access Journals (Sweden)

    Chiemchaisri Wilai

    2001-01-01

    Full Text Available The effects of volatile organic compounds (VOCs on methane oxidation in landfill cover soils were examined. The batch experiments were conducted using single and mixed VOCs, such as, dichloromethane (DCM, trichloroethylene (TCE, tetrachloroethylene (PCE, and benzene. The results from all combinations showed a decrease in methane oxidation rate with increase in VOC concentrations. Moreover, inhibition effects of TCE and DCM were found higher than benzene and PCE. The reduction of methane oxidation by benzene and PCE could be attributed to the toxicity effect, whereas TCE and DCM were found to exhibit the competitive-inhibition effect. When the soil was mixed with DCM, no methane oxidation was found. Damage to the cell's internal membrane was found in a methanotrophic culture exposed to VOC gases which is the attachment site of a key enzyme needed for methane oxidation

  12. Downhole transmission system comprising a coaxial capacitor

    Science.gov (United States)

    Hall, David R [Provo, UT; Pixton, David S [Lehi, UT; Johnson, Monte L [Orem, UT; Bartholomew, David B [Springville, UT; Hall, Jr., H. Tracy; Rawle, Michael [Springville, UT

    2011-05-24

    A transmission system in a downhole component comprises a plurality of data transmission elements. A coaxial cable having an inner conductor and an outer conductor is disposed within a passage in the downhole component such that at least one capacitor is disposed in the passage and having a first terminal coupled to the inner conductor and a second terminal coupled to the outer conductor. Preferably the transmission element comprises an electrically conducting coil. Preferably, within the passage a connector is adapted to electrically connect the inner conductor of the coaxial cable and the lead wire. The coaxial capacitor may be disposed between and in electrically communication with the connector and the passage. In another embodiment a connector is adapted to electrical connect a first and a second portion of the inner conductor of the coaxial cable and a coaxial capacitor is in electrical communication with the connector and the passage.

  13. Negative capacitance in a ferroelectric capacitor.

    Science.gov (United States)

    Khan, Asif Islam; Chatterjee, Korok; Wang, Brian; Drapcho, Steven; You, Long; Serrao, Claudy; Bakaul, Saidur Rahman; Ramesh, Ramamoorthy; Salahuddin, Sayeef

    2015-02-01

    The Boltzmann distribution of electrons poses a fundamental barrier to lowering energy dissipation in conventional electronics, often termed as Boltzmann Tyranny. Negative capacitance in ferroelectric materials, which stems from the stored energy of a phase transition, could provide a solution, but a direct measurement of negative capacitance has so far been elusive. Here, we report the observation of negative capacitance in a thin, epitaxial ferroelectric film. When a voltage pulse is applied, the voltage across the ferroelectric capacitor is found to be decreasing with time--in exactly the opposite direction to which voltage for a regular capacitor should change. Analysis of this 'inductance'-like behaviour from a capacitor presents an unprecedented insight into the intrinsic energy profile of the ferroelectric material and could pave the way for completely new applications.

  14. Improving the mechanical stability of a standard capacitor

    CSIR Research Space (South Africa)

    Moodley, SS

    2003-04-01

    Full Text Available temperature coefficients of capacitance, they were susceptible to mechanical shock. During 1999, a project was initiated to improve the mechanical stability of the capacitors after two capacitors were damaged during transit, while being transported as separate...

  15. Li-Ion, Ultra-capacitor Based Hybrid Energy Module

    National Research Council Canada - National Science Library

    Daboussi, Zaher; Paryani, Anil; Khalil, Gus; Catherino, Henry; Gargies, Sonya

    2007-01-01

    .... To determine the optimum utilization of ultra-capacitors in applications where high power density and high energy density are required, an optimized Li-Ion/Ultra-capacitor Hybrid Energy Module (HEM...

  16. Applying low-energy multipulse excimer laser annealing to improve charge retention of Au nanocrystals embedded MOS capacitors

    International Nuclear Information System (INIS)

    Shen, Kuan-Yuan; Chen, Hung-Ming; Liao, Ting-Wei; Kuan, Chieh-Hsiung

    2015-01-01

    The low-energy multipulse excimer laser annealing (LEM-ELA) is proposed to anneal the nanostructure of nanocrystal (NC) embedded in a SiO 2 thin film without causing atomic diffusion and damaging the NCs, since the LEM-ELA combining the advantages of laser annealing and UV curing features rapid heating and increasing oxide network connectivity. A Fourier transform infrared spectroscopy (FTIR) characterization of SiO 2 thin films annealed using LEM-ELA indicated that the quality was improved through the removal of water-related impurities and the reconstruction of the network Si–O–Si bonds. Then, LEM-ELA was applied to a SiO 2 thin film embedded with Au NCs, which were fabricated as MOS capacitors. The charge retention was greatly improved and the percentage of retained charges was about 10% after 3  ×  10 8  s. To investigate and differentiate the effects of LEM-ELA on charges stored in both oxide traps and in the Au NCs, a double-mechanism charge relaxation analysis was performed. The results indicated that the oxide traps were removed and the confinement ability of Au NCs was enhanced. The separated memory windows contributed from the charges in Au NCs and those in oxide traps were obtained and further confirmed that the LEM-ELA removed oxide traps without damaging the Au NCs. (paper)

  17. Three-dimensional vertical Si nanowire MOS capacitor model structure for the study of electrical versus geometrical Si nanowire characteristics

    Science.gov (United States)

    Hourdakis, E.; Casanova, A.; Larrieu, G.; Nassiopoulou, A. G.

    2018-05-01

    Three-dimensional (3D) Si surface nanostructuring is interesting towards increasing the capacitance density of a metal-oxidesemiconductor (MOS) capacitor, while keeping reduced footprint for miniaturization. Si nanowires (SiNWs) can be used in this respect. With the aim of understanding the electrical versus geometrical characteristics of such capacitors, we fabricated and studied a MOS capacitor with highly ordered arrays of vertical Si nanowires of different lengths and thermal silicon oxide dielectric, in comparison to similar flat MOS capacitors. The high homogeneity and ordering of the SiNWs allowed the determination of the single SiNW capacitance and intrinsic series resistance, as well as other electrical characteristics (density of interface states, flat-band voltage and leakage current) in relation to the geometrical characteristics of the SiNWs. The SiNW capacitors demonstrated increased capacitance density compared to the flat case, while maintaining a cutoff frequency above 1 MHz, much higher than in other reports in the literature. Finally, our model system has been shown to constitute an excellent platform for the study of SiNW capacitors with either grown or deposited dielectrics, as for example high-k dielectrics for further increasing the capacitance density. This will be the subject of future work.

  18. A multi-level capacitor-less memory cell fabricated on a nano-scale strained silicon-on-insulator

    International Nuclear Information System (INIS)

    Park, Jea-Gun; Kim, Seong-Je; Shin, Mi-Hee; Song, Seung-Hyun; Shim, Tae-Hun; Chung, Sung-Woong; Enomoto, Hirofumi

    2011-01-01

    A multi-level capacitor-less memory cell was fabricated with a fully depleted n-metal-oxide-semiconductor field-effect transistor on a nano-scale strained silicon channel on insulator (FD sSOI n-MOSFET). The 0.73% biaxial tensile strain in the silicon channel of the FD sSOI n-MOSFET enhanced the effective electron mobility to ∼ 1.7 times that with an unstrained silicon channel. This thereby enables both front- and back-gate cell operations, demonstrating eight-level volatile memory-cell operation with a 1 ms retention time and 12 μA memory margin. This is a step toward achieving a terabit volatile memory cell.

  19. Series-, Parallel-, and Inter-Connection of Solid-State Arbitrary Fractional-Order Capacitors: Theoretical Study and Experimental Verification

    KAUST Repository

    Kartci, Aslihan

    2018-02-26

    In the paper, general analytical formulas are introduced for the determination of equivalent impedance, magnitude, and phase, i.e. order, for n arbitrary fractional-order capacitors (FoCs) connected in series, parallel, and their interconnection. The approach presented helps to evaluate these relevant quantities in the fractional domain since the order of each element has a significant effect on the impedance of each FoC and their equivalent capacitance cannot be considered. Three types of solid-state fractional-order passive capacitors of different orders, using ferroelectric polymer and reduced Graphene Oxide-percolated P(VDF-TrFE-CFE) composite structures, are fabricated and characterized. Using an impedance analyzer, the behavior of the devices was found to be stable in the frequency range 0.2MHz–20MHz, with a phase angle deviation of ±4 degrees. Multiple numerical and experimental case studies are given, in particular for two and three connected FoCs. The fundamental issues of the measurement units of the FoCs connected in series and parallel are derived. A MATLAB open access source code is given in Appendix sec:append for easy calculation of the equivalent FoC magnitude and phase. The experimental results are in good agreement with the theoretical assumptions.

  20. Effect of oxygen on decomposition of nitrous oxide over various metal oxide catalysts

    International Nuclear Information System (INIS)

    Satsuma, Atsushi; Maeshima, Hajime; Watanabe, Kiyoshi; Hattori, Tadashi

    2001-01-01

    The inhibitory effect of oxygen on decomposition of nitrous oxide over various metal oxide catalysts was investigated. The activity of nitrous oxide decomposition significantly decreased over CuO, Co 3 O 4 , NiO, Fe 2 O 3 , SnO 2 , In 2 O 3 and Cr 2 O 3 by reversible adsorption of oxygen onto the active sites. On the contrary to this, there was no or small change in the activity of TiO 2 , Al 2 O 3 , MgO, La 2 O 3 and CaO. A good correlation was observed between the degree of inhibition and the heat of formation of metal oxides. On the basis of kinetic model, the reduction of catalytic activity in the presence of oxygen was rationalized with the strength of oxygen adsorption on the metal oxide surface. (author)

  1. Electrochemical properties of quaternary ammonium salts for electrochemical capacitors

    Energy Technology Data Exchange (ETDEWEB)

    Ue, Makoto; Takeda, Masayuki; Takehara, Masahiro; Mori, Shoichiro [Mitsubishi Chemical Corp., Inashiki, Ibaraki (Japan). Tsukuba Research Center

    1997-08-01

    The limiting reduction and oxidation potentials and electrolytic conductivities of new quaternary ammonium salts were examined for electrochemical capacitor applications, whose anions have already been tested as lithium salts for lithium battery applications. The anodic stability was in the following order BR{sub 4}{sup {minus}} < ClO{sub 4}{sup {minus}} {le} CF{sub 3}SO{sub 3}{sup {minus}} < (CF{sub 3}SO{sub 2}){sub 2}N{sup {minus}} {le} C{sub 4}F{sub 9}SO{sub 3}{sup {minus}} < BF{sub 4}{sup {minus}} < PF{sub 6}{sup {minus}} {le} AsF{sub 6}{sup {minus}} < SbF{sub 6}{sup {minus}}. The electrolytic conductivities of Me{sub 4{minus}n}Et{sub n}N(CF{sub 3}SO{sub 2}){sub 2}N (n = 0--4) were examined in comparison with Me{sub 4{minus}n}Et{sub n}NBF{sub 4} counterparts. These imide salts showed good solubility, relatively high conductivity, and anodic stability in propylene carbonate. Et{sub 4}N(CF{sub 3}SO{sub 2}){sub 2}N was found to be a good supporting salt for low permittivity organic solvents, and it afforded a highly conductive electrolyte system based on the ethylene carbonate-dimethyl carbonate mixed solvent, which is useful for electrochemical capacitor applications.

  2. Liquid Crystals of Lithium Dodecylbenzenesulfonate for Electric Double Layer Capacitors

    International Nuclear Information System (INIS)

    Kuzmin, Andrey Vasil’evich; Yurtov, Evgeny V.

    2016-01-01

    Ionic lyotropic liquid crystals based on lithium dodecylbenzenesulfonate were used as electrolytes for electric double layer capacitors with carbon fibrous electrodes. The capacitors were tasted by cyclic voltammetry, galvanostatic charge and discharge, and impedance spectroscopy. The highest specific capacitance was achieved for electrical double layer capacitor equipped with ionic lyotropic liquid crystal of lithium dodecylbenzenesulfonate 35 wt% in water. The specific capacitance of capacitor was calculated from galvanostatic discharge curves – 15 F/g of carbon fibrous material

  3. Design and Characterization of Vertical Mesh Capacitors in Standard CMOS

    DEFF Research Database (Denmark)

    Christensen, Kåre Tais

    2001-01-01

    This paper shows how good RF capacitors can be made in a standard digital CMOS process. The capacitors which are also well suited for binary weighted switched capacitor banks show very good RF performance: Q-values of 57 at 4.0 GHz, a density of 0.27 fF/μ2, 2.2 μm wide shielded unit capacitors, 6...

  4. Performance of ALVAND 1. capacitor bank

    International Nuclear Information System (INIS)

    Torabi-fard, A.; Farahani, M.; Ebrani, M.; Rostami, R.; Daghighian, F.

    1978-01-01

    This report describes the specifications of the capacitor bank for the ALVAND I, Linear theta pinch experiment and the results of some tests performed on it. A one-meter-wide module includes the basic components such as capacitors, Spark gaps, and crowbar triggers. Complementary parts such as ground system, pressurised dry air system and safety system were added. With a rise-time of about three micro-seconds and a total current of six million amperes it is possible to produce ion temperature in excess of one kev for a few microseconds. Different probes were used to measure the magnetic field and the total current

  5. Printed Barium Strontium Titanate capacitors on silicon

    Energy Technology Data Exchange (ETDEWEB)

    Sette, Daniele [Univ. Grenoble Alpes, F-38000 Grenoble (France); CEA, LETI, MINATEC Campus, F-38054 Grenoble (France); Luxembourg Institute of Science and Technology LIST, Materials Research and Technology Department, L-4422 Belvaux (Luxembourg); Kovacova, Veronika [Univ. Grenoble Alpes, F-38000 Grenoble (France); CEA, LETI, MINATEC Campus, F-38054 Grenoble (France); Defay, Emmanuel, E-mail: emmanuel.defay@list.lu [Univ. Grenoble Alpes, F-38000 Grenoble (France); CEA, LETI, MINATEC Campus, F-38054 Grenoble (France); Luxembourg Institute of Science and Technology LIST, Materials Research and Technology Department, L-4422 Belvaux (Luxembourg)

    2015-08-31

    In this paper, we show that Barium Strontium Titanate (BST) films can be prepared by inkjet printing of sol–gel precursors on platinized silicon substrate. Moreover, a functional variable capacitor working in the GHz range has been made without any lithography or etching steps. Finally, this technology requires 40 times less precursors than the standard sol–gel spin-coating technique. - Highlights: • Inkjet printing of Barium Strontium Titanate films • Deposition on silicon substrate • Inkjet printed silver top electrode • First ever BST films thinner than 1 μm RF functional variable capacitor that has required no lithography.

  6. Graphene spin capacitor for magnetic field sensing

    OpenAIRE

    Semenov, Y. G.; Zavada, J. M.; Kim, K. W.

    2010-01-01

    An analysis of a novel magnetic field sensor based on a graphene spin capacitor is presented. The proposed device consists of graphene nanoribbons on top of an insulator material connected to a ferromagnetic source/drain. The time evolution of spin polarized electrons injected into the capacitor can be used for an accurate determination at room temperature of external magnetic fields. Assuming a spin relaxation time of 100 ns, magnetic fields on the order of $\\sim 10$ mOe may be detected at r...

  7. Antenna Miniaturization with MEMS Tunable Capacitors

    DEFF Research Database (Denmark)

    Barrio, Samantha Caporal Del; Morris, Art; Pedersen, Gert Frølund

    2014-01-01

    In today’s mobile device market, there is a strong need for efficient antenna miniaturization. Tunable antennas are a very promising way to reduce antenna volume while enlarging its operating bandwidth. MEMS tunable capacitors are state-ofthe- art in terms of insertion loss and their characterist......In today’s mobile device market, there is a strong need for efficient antenna miniaturization. Tunable antennas are a very promising way to reduce antenna volume while enlarging its operating bandwidth. MEMS tunable capacitors are state-ofthe- art in terms of insertion loss...

  8. Low-Voltage Switched-Capacitor Circuits

    DEFF Research Database (Denmark)

    Bidari, E.; Keskin, M.; Maloberti, F.

    1999-01-01

    Switched-capacitor stages are described which can function with very low (typically 1 V) supply voltages, without using voltage boosting or switched op-amps. Simulations indicate that high performance may be achieved using these circuits in filter or data converter applications.......Switched-capacitor stages are described which can function with very low (typically 1 V) supply voltages, without using voltage boosting or switched op-amps. Simulations indicate that high performance may be achieved using these circuits in filter or data converter applications....

  9. Clocking Scheme for Switched-Capacitor Circuits

    DEFF Research Database (Denmark)

    Steensgaard-Madsen, Jesper

    1998-01-01

    A novel clocking scheme for switched-capacitor (SC) circuits is presented. It can enhance the understanding of SC circuits and the errors caused by MOSFET (MOS) switches. Charge errors, and techniques to make SC circuits less sensitive to them are discussed.......A novel clocking scheme for switched-capacitor (SC) circuits is presented. It can enhance the understanding of SC circuits and the errors caused by MOSFET (MOS) switches. Charge errors, and techniques to make SC circuits less sensitive to them are discussed....

  10. Effects of in-plane compressive stress on electrical properties of (Ba,Sr)TiO3 thin film capacitors prepared by on- and off-axis rf magnetron sputtering

    International Nuclear Information System (INIS)

    Park, Woo Young; Ahn, Kun Ho; Hwang, Cheol Seong

    2003-01-01

    This study investigated the structural and electrical properties of (Ba,Sr)TiO 3 (BST) thin film capacitors with thicknesses ranging from 18 to 215 nm, which were prepared by on- and off-axis rf magnetron sputtering technique on Pt/SiO 2 /Si substrates. The deposition rate and cation composition ratios of the films were controlled to be the same regardless of the sputtering geometry. All the films show elongations in the out-of-plane lattice spacing, suggesting the presence of compressive stress with a smaller value by on-axis sputtering than by the off-axis system. There was no thickness dependence of the strain in the polycrystalline BST films. The BST films deposited using the on-axis system showed a higher bulk dielectric constant with a higher interfacial capacitance and a lower leakage current level than the films produced by the off-axis system. The strain effect was proposed to explain the correlations between the structural and electrical properties

  11. Effect of preliminary oxidation on process of steel carburization

    Energy Technology Data Exchange (ETDEWEB)

    Devochkin, O V; Vorontsov, E S; Filonov, V N [Voronezhskij Politekhnicheskij Inst. (USSR)

    1975-01-01

    Effects of preliminary oxidation of the metal surface and its subsequent reduction steel cementation were studied. The samples with interferentionally coloured oxide film on the surface had deeper carbonated layer than those without film. The kinetics of carbonation process and the mechanism proposed for this phenomenon are given.

  12. Lg = 100 nm In0.7Ga0.3As quantum well metal-oxide semiconductor field-effect transistors with atomic layer deposited beryllium oxide as interfacial layer

    International Nuclear Information System (INIS)

    Koh, D.; Kwon, H. M.; Kim, T.-W.; Veksler, D.; Gilmer, D.; Kirsch, P. D.; Kim, D.-H.; Hudnall, Todd W.; Bielawski, Christopher W.; Maszara, W.; Banerjee, S. K.

    2014-01-01

    In this study, we have fabricated nanometer-scale channel length quantum-well (QW) metal-oxide-semiconductor field effect transistors (MOSFETs) incorporating beryllium oxide (BeO) as an interfacial layer. BeO has high thermal stability, excellent electrical insulating characteristics, and a large band-gap, which make it an attractive candidate for use as a gate dielectric in making MOSFETs. BeO can also act as a good diffusion barrier to oxygen owing to its small atomic bonding length. In this work, we have fabricated In 0.53 Ga 0.47 As MOS capacitors with BeO and Al 2 O 3 and compared their electrical characteristics. As interface passivation layer, BeO/HfO 2 bilayer gate stack presented effective oxide thickness less 1 nm. Furthermore, we have demonstrated In 0.7 Ga 0.3 As QW MOSFETs with a BeO/HfO 2 dielectric, showing a sub-threshold slope of 100 mV/dec, and a transconductance (g m,max ) of 1.1 mS/μm, while displaying low values of gate leakage current. These results highlight the potential of atomic layer deposited BeO for use as a gate dielectric or interface passivation layer for III–V MOSFETs at the 7 nm technology node and/or beyond

  13. Iodine encapsulation in CNTs and its application for electrochemical capacitor

    International Nuclear Information System (INIS)

    Taniguchi, Y.; Ishii, Y.; Al-zubaidi, A.; Kawasaki, S.; Rashid, M.; Syakirin, A.

    2016-01-01

    We report the experimental results for new type electrochemical capacitor using iodine redox reaction in single-walled carbon nanotubes (SWCNTs). It was found that the energy density of the present redox capacitor using SWCNTs is almost three times larger than that of the normal electric double layer capacitor.

  14. Application of PFN capacitors in high power systems

    International Nuclear Information System (INIS)

    Parker, R.D.

    1979-01-01

    The application of lightweight reliable capacitors in a mobile energy store is discussed. The relationship of system design parameters to capacitor size and life is displayed. Electric fields and weights of a 21 J/lb and a 77 J/lb pulse discharge capacitor design are given. Estimates of future near-tern development are made

  15. Dynamics of a Liquid Dielectric Attracted by a Cylindrical Capacitor

    Science.gov (United States)

    Nardi, Rafael; Lemos, Nivaldo A.

    2007-01-01

    The dynamics of a liquid dielectric attracted by a vertical cylindrical capacitor are studied. Contrary to what might be expected from the standard calculation of the force exerted by the capacitor, the motion of the dielectric is different depending on whether the charge or the voltage of the capacitor is held constant. The problem turns out to…

  16. Iodine encapsulation in CNTs and its application for electrochemical capacitor

    Energy Technology Data Exchange (ETDEWEB)

    Taniguchi, Y.; Ishii, Y.; Al-zubaidi, A.; Kawasaki, S., E-mail: kawasaki.shinji@nitech.ac.jp [Nagoya Institute of Technology, Gokiso, Showa, Nagoya, Aichi (Japan); Rashid, M.; Syakirin, A. [Universiti Teknologi MARA (UiTM), 40450 Shah Alam, Selangor (Malaysia)

    2016-07-06

    We report the experimental results for new type electrochemical capacitor using iodine redox reaction in single-walled carbon nanotubes (SWCNTs). It was found that the energy density of the present redox capacitor using SWCNTs is almost three times larger than that of the normal electric double layer capacitor.

  17. Oxidation in fish oil-enriched mayonnaise 4 : Effect of tocopherol concentration on oxidative deterioration

    DEFF Research Database (Denmark)

    Jacobsen, Charlotte; Hartvigsen, Karsten; Lund, Pia

    2001-01-01

    The effect of the water-dispersible tocopherol preparation, Grindox 1032, and the oil-soluble tocopherol preparation, Toco 70, on oxidative stability in fish oil-enriched mayonnaise was examined. The two commercial antioxidant preparations were supplemented in different levels corresponding to 20......-280 ppm tocopherol in addition to the 600 ppm present in the oils used for the mayonnaise. The oxidative stability was assessed by sensory analysis, the tendency of formation of free radicals, and concentrations of lipid hydroperoxides and volatile oxidation products. The effect of tocopherol on oxidation...... depended on the nature and the concentration of the tocopherol preparation employed, and it also depended on the parameters evaluated. Addition of high levels of Grindox 1032 (similar to 140-280 ppm tocopherol) thus decreased the intensity of rancid off-flavor, but increased the formation of fishy off...

  18. Irradiation response of radio-frequency sputtered Al/Gd2O3/p-Si MOS capacitors

    Science.gov (United States)

    Kahraman, A.; Yilmaz, E.

    2017-10-01

    The usage of the Gadolinium oxide (Gd2O3) as sensitive region in the MOS (Metal-Oxide-Semiconductor)-based dosimeters was investigated in the presented study. The Gd2O3 films grown on p-type Si (100) by RF magnetron sputtering were annealed at 800 °C under N2 ambient. The back and front metal contacts were establishes to produce MOS capacitors. The fabricated Gd2O3 MOS capacitors were irradiated in the dose range 0.5-50 Gy by 60Co gamma source. The performed Capacitance-Voltage (C-V) curves of the Gd2O3 MOS capacitors shifted to right side relative to pre-irradiation one. While continuous increments in the oxide trapped charges with increasing in gamma dose were observed, interface trapped charges fluctuated in the studied dose range. However, the variation of the interface trapped charge densities was found in the order of 1011 cm-2 and no significant variation was observed with applied dose. These results confirm that a significant deterioration does not occur in the capacitance during the irradiation. The higher oxide trapped charges compared to interface trapped charges showed that these traps were more responsible for the shift of the C-V curves. The sensitivity and percentage fading after 105 min of the Gd2O3 MOS capacitor were found as 39.7±1.4 mV/Gy and 14.5%, respectively. The devices sensitivity was found to be higher than that of capacitors composed of Er2O3, Sm2O3, La2O3, Al2O3, and SiO2, but, the high fading values is seen as a major problem for these capacitors. Finally, the barrier height was investigated with gamma exposure and the results showed that its value increased with increasing in radiation dose due to possible presence of the acceptor-like interface states.

  19. Capacitors and Resistance-Capacitance Networks.

    Science.gov (United States)

    Balabanian, Norman; Root, Augustin A.

    This programed textbook was developed under a contract with the United States Office of Education as Number 5 in a series of materials for use in an electrical engineering sequence. It is divided into three parts--(1) capacitors, (2) voltage-current relationships, and (3) simple resistance-capacitance networks. (DH)

  20. Charge and Energy Stored in a Capacitor

    Science.gov (United States)

    Kraftmakher, Yaakov

    2012-01-01

    Using a data-acquisition system, the charge and energy stored in a capacitor are measured and displayed during the charging/discharging process. The experiment is usable as a laboratory work and/or a lecture demonstration. (Contains 3 figures.)

  1. Charging a Capacitor with a Photovoltaic Module

    Science.gov (United States)

    Aguilar, Horacio Munguía; Maldonado, Rigoberto Franco; Navarro, Luis Barba

    2017-01-01

    Charging a capacitor with a photovoltaic module is an experiment which reveals a lot about the modules characteristics. It is customary to represent these characteristics with an equivalent circuit whose elements represent its physical parameters. The behavior of a photovoltaic module is very similar to that of a single cell but the electric…

  2. Capacitor discharge process for welding braided cable

    Science.gov (United States)

    Wilson, Rick D.

    1995-01-01

    A capacitor discharge process for welding a braided cable formed from a plurality of individual cable strands to a solid metallic electrically conductive member comprises the steps of: (a) preparing the electrically conductive member for welding by bevelling one of its end portions while leaving an ignition projection extending outwardly from the apex of the bevel; (b) clamping the electrically conductive member in a cathode fixture; (c) connecting the electrically conductive member clamped in the cathode fixture to a capacitor bank capable of being charged to a preselected voltage value; (d) preparing the braided cable for welding by wrapping one of its end portions with a metallic sheet to form a retaining ring operable to maintain the individual strands of the braided cable in fixed position within the retaining ring; (e) clamping the braided cable and the retaining ring as a unit in an anode fixture so that the wrapped end portion of the braided cable faces the ignition projection of the electrically conductive member; and (f) moving the cathode fixture towards the anode fixture until the ignition projection of the electrically conductive member contacts the end portion of the braided cable thereby allowing the capacitor bank to discharge through the electrically conductive member and through the braided cable and causing the electrically conductive member to be welded to the braided cable via capacitor discharge action.

  3. Genotoxic effects of zinc oxide nanoparticles

    Science.gov (United States)

    Heim, Julia; Felder, Eva; Tahir, Muhammad Nawaz; Kaltbeitzel, Anke; Heinrich, Ulf Ruediger; Brochhausen, Christoph; Mailänder, Volker; Tremel, Wolfgang; Brieger, Juergen

    2015-05-01

    The potential toxicity of nanoparticles has currently provoked public and scientific discussions, and attempts to develop generally accepted handling procedures for nanoparticles are under way. The investigation of the impact of nanoparticles on human health is overdue and reliable test systems accounting for the special properties of nanomaterials must be developed. Nanoparticular zinc oxide (ZnO) may be internalised through ambient air or the topical application of cosmetics, only to name a few, with unpredictable health effects. Therefore, we analysed the determinants of ZnO nanoparticle (NP) genotoxicity. ZnO NPs (15-18 nm in diameter) were investigated at concentrations of 0.1, 10 and 100 μg mL-1 using the cell line A549. Internalised NPs were only infrequently detectable by TEM, but strongly increased Zn2+ levels in the cytoplasm and even more in the nuclear fraction, as measured by atom absorption spectroscopy, indicative of an internalised zinc and nuclear accumulation. We observed a time and dosage dependent reduction of cellular viability after ZnO NP exposure. ZnCl2 exposure to cells induced similar impairments of cellular viability. Complexation of Zn2+ with diethylene triamine pentaacetic acid (DTPA) resulted in the loss of toxicity of NPs, indicating the relevant role of Zn2+ for ZnO NP toxicity. Foci analyses showed the induction of DNA double strand breaks (DSBs) by ZnO NPs and increased intracellular reactive oxygen species (ROS) levels. Treatment of the cells with the ROS scavenger N-acetyl-l-cysteine (NAC) resulted in strongly decreased intracellular ROS levels and reduced DNA damage. However, a slow increase of ROS after ZnO NP exposure and reduced but not quashed DSBs after NAC-treatment suggest that Zn2+ may exert genotoxic activities without the necessity of preceding ROS-induction. Our data indicate that ZnO NP toxicity is a result of cellular Zn2+ intake. Subsequently increased ROS-levels cause DNA damage. However, we found evidence for

  4. Nanostructured core-shell electrode materials for electrochemical capacitors

    Science.gov (United States)

    Jiang, Long-bo; Yuan, Xing-zhong; Liang, Jie; Zhang, Jin; Wang, Hou; Zeng, Guang-ming

    2016-11-01

    Core-shell nanostructure represents a unique system for applications in electrochemical energy storage devices. Owing to the unique characteristics featuring high power delivery and long-term cycling stability, electrochemical capacitors (ECs) have emerged as one of the most attractive electrochemical storage systems since they can complement or even replace batteries in the energy storage field, especially when high power delivery or uptake is needed. This review aims to summarize recent progress on core-shell nanostructures for advanced supercapacitor applications in view of their hierarchical architecture which not only create the desired hierarchical porous channels, but also possess higher electrical conductivity and better structural mechanical stability. The core-shell nanostructures include carbon/carbon, carbon/metal oxide, carbon/conducting polymer, metal oxide/metal oxide, metal oxide/conducting polymer, conducting polymer/conducting polymer, and even more complex ternary core-shell nanoparticles. The preparation strategies, electrochemical performances, and structural stabilities of core-shell materials for ECs are summarized. The relationship between core-shell nanostructure and electrochemical performance is discussed in detail. In addition, the challenges and new trends in core-shell nanomaterials development have also been proposed.

  5. A thermoelectric voltage effect in polyethylene oxide

    CERN Document Server

    Martin, B; Kliem, H

    2003-01-01

    The conductivity of polyethylene oxide (PEO) is described with a three-dimensional hopping model considering electrostatic interactions between the ions. Ions fluctuate over energy-barriers in a multi-well potential. To decide whether positive or negative charges are responsible for this conductivity, the thermoelectric voltage is measured. The samples are embedded between two aluminium-electrodes. The oxide on the interface between the electrodes and the PEO serves as a blocking layer. The temperature of each electrode is controlled by a Peltier element. A temperature step is applied to one electrode by changing the temperature of one of the Peltier elements. Due to this temperature gradient, the mobile charges fluctuate thermally activated from the warmer side to the colder side of the sample. The direction of the measured thermoelectric voltage indicates the type of mobile charges. It is found that positive charges are mobile. Further, it is shown that the absolute value of the thermoelectric voltage depen...

  6. A Difference in Using Atomic Layer Deposition or Physical Vapour Deposition TiN as Electrode Material in Metal-Insulator-Metal and Metal-Insulator-Silicon Capacitors

    NARCIS (Netherlands)

    Groenland, A.W.; Wolters, Robertus A.M.; Kovalgin, Alexeij Y.; Schmitz, Jurriaan

    2011-01-01

    In this work, metal-insulator-metal (MIM) and metal-insulator-silicon (MIS) capacitors are studied using titanium nitride (TiN) as the electrode material. The effect of structural defects on the electrical properties on MIS and MIM capacitors is studied for various electrode configurations. In the

  7. Theoretical and experimental analysis of inverter fed induction motor system under DC link capacitor failure

    Directory of Open Access Journals (Sweden)

    Hadeed A. Sher

    2017-04-01

    Full Text Available In this paper theoretical and experimental analysis of an AC–DC–AC inverter under DC link capacitor failure is presented. The failure study conducted for this paper is the open circuit of the DC link capacitor. The presented analysis incorporates the results for both single and three phase AC input. It has been observed that the higher ripple frequency provides better ride through capability for this fault. Furthermore, the effects of this fault on electrical characteristics of AC–DC–AC inverter and mechanical properties of the induction motor are also presented. Moreover, the effect of pulsating torque as a result of an open circuited DC link capacitor is also taken into consideration. Theoretical analysis is supported by computer aided simulation as well as with a real time experimental prototype.

  8. Generation of amorphous ceramic capacitor coatings on titanium using a continuous sol-gel process

    International Nuclear Information System (INIS)

    Dixon, B.G.; Walsh, M.A. III; Phillips, P.G.; Morris, R.S.

    1995-01-01

    Thin amorphous films of ceramic capacitor materials were successfully deposited using sol-gel chemistry onto titanium wire using a continuous, computer controlled process. By repeatedly depositing and calcining very thin layers of material, smooth and even coats can be produced. Surface analyses revealed the layered nature of these thin coats, as well as the amorphous nature of the ceramic. The electrical properties of the better coatings, all composed of niobium, bismuth, zinc oxides, were then evaluated. copyright 1995 Materials Research Society

  9. Alternating current line-filter based on electrochemical capacitor utilizing template-patterned graphene

    OpenAIRE

    Zhenkun Wu; Liyi Li; Ziyin Lin; Bo Song; Zhuo Li; Kyoung-Sik Moon; Ching-Ping Wong; Shu-Lin Bai

    2015-01-01

    Aluminum electrolytic capacitors (AECs) are widely used for alternating current (ac) line-filtering. However, their bulky size is becoming more and more incompatible with the rapid development of portable electronics. Here we report a scalable process to fabricate miniaturized graphene-based ac line-filters on flexible substrates at room temperature. In this work, graphene oxide (GO) is reduced by patterned metal interdigits at room temperature and used directly as the electrode material. The...

  10. Current Control of Grid Converters Connected with Series AC Capacitor

    DEFF Research Database (Denmark)

    Wang, Xiongfei; Blaabjerg, Frede; Loh, Poh Chiang

    2015-01-01

    The series ac capacitor has recently been used with the transformerless grid-connected converters in the distribution power grids. The capacitive characteristic of the resulting series LC filter restricts the use of conventional synchronous integral or stationary resonant current controllers. Thus...... this paper proposes a fourth-order resonant controller in the stationary frame, which guarantees a zero steady-state current tracking error for the grid converters with series LC filter. This method is then implemented in a three-phase experimental system for verification, where the current harmonics below...... the LC filter resonance frequency are effectively eliminated. Experimental results confirm the validity of the proposed current control scheme....

  11. High speed capacitor-inverter based carbon nanotube full adder.

    Science.gov (United States)

    Navi, K; Rashtian, M; Khatir, A; Keshavarzian, P; Hashemipour, O

    2010-03-18

    Carbon Nanotube filed-effect transistor (CNFET) is one of the promising alternatives to the MOS transistors. The geometry-dependent threshold voltage is one of the CNFET characteristics, which is used in the proposed Full Adder cell. In this paper, we present a high speed Full Adder cell using CNFETs based on majority-not (Minority) function. Presented design uses eight transistors and eight capacitors. Simulation results show significant improvement in terms of delay and power-delay product in comparison to contemporary CNFET Adder Cells. Simulations were carried out using HSPICE based on CNFET model with 0.6 V VDD.

  12. The Inhibition Effect of Cell DNA Oxidative Damage and LDL Oxidation by Bovine Colostrums

    Directory of Open Access Journals (Sweden)

    Chih-Wei Chen

    2016-10-01

    Full Text Available In the present study, we investigated the effect of bovine colostrums on inhibition of DNA oxidative damage and low density lipoprotein (LDL oxidation in vitro. Results showed that whey and skimmed milk exhibited not only higher inhibitory activities of oxidative damage of deoxyribose but also an inhibitory effect on the breakdown of supercoiled DNA into open circular DNA and linear DNA. The quantities of 8-OH-2′-dG formed under whey, caseins and skimmed milk treatment were 0.24, 0.24 and 1.24 μg/mL, respectively. The quantity of malondialdehyde formed through LDL oxidation induced by copprous ion was significantly decreased as colostrums protein solutions were added, in which whey and caseins led to a more significant decrease than skimmed milk. The formation of conjugated dienes could be inhibited by treatment with colostrums protein solutions. Whey exhibited the longest lag time of conjugated dienes formation among the colostrums proteins. The lag time of the whey was 2.33 times that of the control. From the results of foregoing, the bovine colostrums protein has potential value in the inhibition of DNA oxidation damage and LDL oxidation.

  13. Humidity Testing of PME and BME Ceramic Capacitors with Cracks

    Science.gov (United States)

    Teverovsky, Alexander A.; Herzberger, Jaemi

    2014-01-01

    Cracks in ceramic capacitors are one of the major causes of failures during operation of electronic systems. Humidity testing has been successfully used for many years to verify the absence of cracks and assure quality of military grade capacitors. Traditionally, only precious metal electrode (PME) capacitors were used in high reliability applications and the existing requirements for humidity testing were developed for this type of parts. With the advance of base metal electrode (BME) capacitors, there is a need for assessment of the applicability of the existing techniques for the new technology capacitors. In this work, variety of different PME and BME capacitors with introduced cracks were tested in humid environments at different voltages and temperatures. Analysis of the test results indicates differences in the behavior and failure mechanisms for BME and PME capacitors and the need for different testing conditions.

  14. Highly Selective and Sensitive Self-Powered Glucose Sensor Based on Capacitor Circuit.

    Science.gov (United States)

    Slaughter, Gymama; Kulkarni, Tanmay

    2017-05-03

    Enzymatic glucose biosensors are being developed to incorporate nanoscale materials with the biological recognition elements to assist in the rapid and sensitive detection of glucose. Here we present a highly sensitive and selective glucose sensor based on capacitor circuit that is capable of selectively sensing glucose while simultaneously powering a small microelectronic device. Multi-walled carbon nanotubes (MWCNTs) is chemically modified with pyrroloquinoline quinone glucose dehydrogenase (PQQ-GDH) and bilirubin oxidase (BOD) at anode and cathode, respectively, in the biofuel cell arrangement. The input voltage (as low as 0.25 V) from the biofuel cell is converted to a stepped-up power and charged to the capacitor to the voltage of 1.8 V. The frequency of the charge/discharge cycle of the capacitor corresponded to the oxidation of glucose. The biofuel cell structure-based glucose sensor synergizes the advantages of both the glucose biosensor and biofuel cell. In addition, this glucose sensor favored a very high selectivity towards glucose in the presence of competing and non-competing analytes. It exhibited unprecedented sensitivity of 37.66 Hz/mM.cm 2 and a linear range of 1 to 20 mM. This innovative self-powered glucose sensor opens new doors for implementation of biofuel cells and capacitor circuits for medical diagnosis and powering therapeutic devices.

  15. Transparent and Flexible Capacitors with an Ultrathin Structure by Using Graphene as Bottom Electrodes

    Directory of Open Access Journals (Sweden)

    Tao Guo

    2017-11-01

    Full Text Available Ultrathin, transparent and flexible capacitors using graphene as the bottom electrodes were directly fabricated on polyethylene naphthalate (PEN substrates. ZrO2 dielectric films were deposited on the treated surface of graphene by atomic layer deposition (ALD. The deposition process did not introduce any detectible defects in the graphene, as indicated by Raman measurements, guaranteeing the electrical performances of the graphene electrodes. The Aluminum-doped zinc oxide (AZO films were prepared as the top electrodes using the ALD technique. The capacitors presented a high capacitance density (10.3 fF/μm2 at 10 kHz and a relatively low leakage current (5.3 × 10−6 A/cm2 at 1 V. Bending tests revealed that the capacitors were able to work normally at an outward bending radius of 10 mm without any deterioration of electrical properties. The capacitors exhibited an average optical transmittance of close to 70% at visible wavelengths. Thus, it opens the door to practical applications in transparent integrated circuits.

  16. Dielectric capacitors with three-dimensional nanoscale interdigital electrodes for energy storage.

    Science.gov (United States)

    Han, Fangming; Meng, Guowen; Zhou, Fei; Song, Li; Li, Xinhua; Hu, Xiaoye; Zhu, Xiaoguang; Wu, Bing; Wei, Bingqing

    2015-10-01

    Dielectric capacitors are promising candidates for high-performance energy storage systems due to their high power density and increasing energy density. However, the traditional approach strategies to enhance the performance of dielectric capacitors cannot simultaneously achieve large capacitance and high breakdown voltage. We demonstrate that such limitations can be overcome by using a completely new three-dimensional (3D) nanoarchitectural electrode design. First, we fabricate a unique nanoporous anodic aluminum oxide (AAO) membrane with two sets of interdigitated and isolated straight nanopores opening toward opposite planar surfaces. By depositing carbon nanotubes in both sets of pores inside the AAO membrane, the new dielectric capacitor with 3D nanoscale interdigital electrodes is simply realized. In our new capacitors, the large specific surface area of AAO can provide large capacitance, whereas uniform pore walls and hemispheric barrier layers can enhance breakdown voltage. As a result, a high energy density of 2 Wh/kg, which is close to the value of a supercapacitor, can be achieved, showing promising potential in high-density electrical energy storage for various applications.

  17. Pressure effects on high temperature steam oxidation of Zircaloy-4

    International Nuclear Information System (INIS)

    Park, Kwangheon; Kim, Kwangpyo; Ryu, Taegeun

    2000-01-01

    The pressure effects on Zircaloy-4 (Zry-4) cladding in high temperature steam have been analyzed. A double layer autoclave was made for the high pressure, high temperature oxidation tests. The experimental test temperature range was 700 - 900 deg C, and pressures were 0.1 - 15 MPa. Steam partial pressure turns out to be an important one rather than total pressure. Steam pressure enhances the oxidation rate of Zry-4 exponentially. The enhancement depends on the temperature, and the maximum exists between 750 - 800 deg C. Pre-existing oxide layer decreases the enhancement about 40 - 60%. The acceleration of oxidation rate by high pressure team seems to be originated from the formation of cracks by abrupt transformation of tetragonal phase in oxide, where the un-stability of tetragonal phase comes from the reduction of surface energy by steam. (author)

  18. A Reliability Model for Ni-BaTiO3-Based (BME) Ceramic Capacitors

    Science.gov (United States)

    Liu, Donhang

    2014-01-01

    The evaluation of multilayer ceramic capacitors (MLCCs) with base-metal electrodes (BMEs) for potential NASA space project applications requires an in-depth understanding of their reliability. The reliability of an MLCC is defined as the ability of the dielectric material to retain its insulating properties under stated environmental and operational conditions for a specified period of time t. In this presentation, a general mathematic expression of a reliability model for a BME MLCC is developed and discussed. The reliability model consists of three parts: (1) a statistical distribution that describes the individual variation of properties in a test group of samples (Weibull, log normal, normal, etc.), (2) an acceleration function that describes how a capacitors reliability responds to external stresses such as applied voltage and temperature (All units in the test group should follow the same acceleration function if they share the same failure mode, independent of individual units), and (3) the effect and contribution of the structural and constructional characteristics of a multilayer capacitor device, such as the number of dielectric layers N, dielectric thickness d, average grain size r, and capacitor chip size S. In general, a two-parameter Weibull statistical distribution model is used in the description of a BME capacitors reliability as a function of time. The acceleration function that relates a capacitors reliability to external stresses is dependent on the failure mode. Two failure modes have been identified in BME MLCCs: catastrophic and slow degradation. A catastrophic failure is characterized by a time-accelerating increase in leakage current that is mainly due to existing processing defects (voids, cracks, delamination, etc.), or the extrinsic defects. A slow degradation failure is characterized by a near-linear increase in leakage current against the stress time; this is caused by the electromigration of oxygen vacancies (intrinsic defects). The

  19. Effects of sintering temperature on the internal barrier layer capacitor (IBLC) structure in CaCu.sub.3./sub.Ti.sub.4./sub.O.sub.12./sub. (CCTO) ceramics

    Czech Academy of Sciences Publication Activity Database

    Schmidt, R.; Stennett, M.C.; Hyatt, N.C.; Pokorný, Jan; Prado-Gonjal, J.; Li, M.; Sinclair, D.C.

    2012-01-01

    Roč. 32, č. 12 (2012), s. 3313-3323 ISSN 0955-2219 Institutional research plan: CEZ:AV0Z10100521 Keywords : grain boundaries dielectric properties * chemical properties * perovskites * capacitor s Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 2.360, year: 2012

  20. Effect of ultraviolet illumination on metal oxide resistive memory

    KAUST Repository

    Duran Retamal, Jose Ramon

    2014-12-22

    We investigate the photoelectrical and resistive switching properties of Pt/ZnO/Pt capacitor operated in unipolar mode under ultraviolet (UV) illumination. The oxygen photodesorption under UV illumination explains the photoconduction observed in initial and high resistance states. Meanwhile, oxygen readsorption at surface-related defects justifies the different photoresponses dynamics in both states. Finally, UV illumination significantly reduces the variations of resistance in high resistance state, set voltage and reset voltage by 58%, 33%, and 25%, respectively, stabilizing Pt/ZnO/Pt capacitor. Our findings in improved switching uniformity via UV light give physical insight into designing resistive memory devices.

  1. Effect of ultraviolet illumination on metal oxide resistive memory

    KAUST Repository

    Duran Retamal, Jose Ramon; Kang, Chen-Fang; Ho, Chih-Hsiang; Ke, Jr-Jian; Chang, Wen-Yuan; He, Jr-Hau

    2014-01-01

    We investigate the photoelectrical and resistive switching properties of Pt/ZnO/Pt capacitor operated in unipolar mode under ultraviolet (UV) illumination. The oxygen photodesorption under UV illumination explains the photoconduction observed in initial and high resistance states. Meanwhile, oxygen readsorption at surface-related defects justifies the different photoresponses dynamics in both states. Finally, UV illumination significantly reduces the variations of resistance in high resistance state, set voltage and reset voltage by 58%, 33%, and 25%, respectively, stabilizing Pt/ZnO/Pt capacitor. Our findings in improved switching uniformity via UV light give physical insight into designing resistive memory devices.

  2. Environmental Effects on Non-oxide Ceramics

    Science.gov (United States)

    Jacobson, Nathan S.; Opila, Elizabeth J.

    1997-01-01

    Non-oxide ceramics such as silicon carbide (SiC) and silicon nitride (Si3N4) are promising materials for a wide range of high temperature applications. These include such diverse applications as components for heat engines, high temperature electronics, and re-entry shields for space vehicles. Table I lists a number of selected applications. Most of the emphasis here will be on SiC and Si3N4. Where appropriate, other non-oxide materials such as aluminum nitride (AlN) and boron nitride (BN) will be discussed. Proposed materials include both monolithic ceramics and composites. Composites are treated in more detail elsewhere in this volume, however, many of the oxidation/corrosion reactions discussed here can be extended to composites. In application these materials will be exposed to a wide variety of environments. Table I also lists reactive components of these environments.It is well-known that SiC and Si3N4 retain their strength to high temperatures. Thus these materials have been proposed for a variety of hot-gas-path components in combustion applications. These include heat exchanger tubes, combustor liners, and porous filters for coal combustion products. All combustion gases contain CO2, CO, H2, H2O, O2, and N2. The exact gas composition is dependent on the fuel to air ratio or equivalence ratio. (Equivalence ratio (EQ) is a fuel-to-air ratio, with total hydrocarbon content normalized to the amount of O2 and defined by EQ=1 for complete combustion to CO2 and H2O). Figure 1 is a plot of equilibrium gas composition vs. equivalence ratio. Note that as a general rule, all combustion atmospheres are about 10% water vapor and 10% CO2. The amounts of CO, H2, and O2 are highly dependent on equivalence ratio.

  3. Effect of yttrium on the oxide scale adherence of pre-oxidized silicon-containing heat-resistant alloy

    International Nuclear Information System (INIS)

    Yan Jingbo; Gao Yimin; Shen Yudi; Yang Fang; Yi Dawei; Ye Zhaozhong; Liang Long; Du Yingqian

    2011-01-01

    Highlights: → AE experiment shows yttrium has a beneficial effect on the pre-oxidized HP40 alloy. → Yttrium facilitates the formation of internal oxide after 10 h of oxidation. → Internal oxide changes the rupture behaviour of the oxide scale. → Twins form in the internal oxide and improve the binding strength of the scale. - Abstract: This paper investigates the effect of the rare earth element yttrium on the rupture behaviour of the oxide scale on the silicon-containing heat-resistant alloy during cooling. After 10 h of oxidation, yttrium is found to facilitate the formation of internal oxides (silica) at the scale-matrix interface. Due to the twinning observed by scanning transmission electron microscopy (STEM) in silica, the critical strain value for the scale failure can be dramatically improved, and the formation of cracks at the scale-matrix interface is inhibited.

  4. Effect of Microwave Heating on Phytosterol Oxidation.

    Science.gov (United States)

    Leal-Castañeda, Everth Jimena; Inchingolo, Raffaella; Cardenia, Vladimiro; Hernandez-Becerra, Josafat Alberto; Romani, Santina; Rodriguez-Estrada, María Teresa; Galindo, Hugo Sergio García

    2015-06-10

    The oxidative stability of phytosterols during microwave heating was evaluated. Two different model systems (a solid film made with a phytosterol mixture (PSF) and a liquid mixture of phytosterols and triolein (1:100, PS + TAG (triacylglycerol))) were heated for 1.5, 3, 6, 12, 20, and 30 min at 1000 W. PS degraded faster when they were microwaved alone than in the presence of TAG, following a first-order kinetic model. Up to 6 min, no phytosterol oxidation products (POPs) were generated in both systems. At 12 min of heating, the POP content reached a higher level in PSF (90.96 μg/mg of phytosterols) than in PS + TAG (22.66 μg/mg of phytosterols), but after 30 min of treatment, the opposite trend was observed. 7-Keto derivates were the most abundant POPs in both systems. The extent of phytosterol degradation depends on both the heating time and the surrounding medium, which can impact the quality and safety of the food product destined to microwave heating/cooking.

  5. A thermoelectric voltage effect in polyethylene oxide

    International Nuclear Information System (INIS)

    Martin, Bjoern; Wagner, Achim; Kliem, Herbert

    2003-01-01

    The conductivity of polyethylene oxide (PEO) is described with a three-dimensional hopping model considering electrostatic interactions between the ions. Ions fluctuate over energy-barriers in a multi-well potential. To decide whether positive or negative charges are responsible for this conductivity, the thermoelectric voltage is measured. The samples are embedded between two aluminium-electrodes. The oxide on the interface between the electrodes and the PEO serves as a blocking layer. The temperature of each electrode is controlled by a Peltier element. A temperature step is applied to one electrode by changing the temperature of one of the Peltier elements. Due to this temperature gradient, the mobile charges fluctuate thermally activated from the warmer side to the colder side of the sample. The direction of the measured thermoelectric voltage indicates the type of mobile charges. It is found that positive charges are mobile. Further, it is shown that the absolute value of the thermoelectric voltage depends on the energy-barrier heights in the multi-well potential

  6. Postponed effect of neostigmine on oxidative homeostasis

    Directory of Open Access Journals (Sweden)

    Pohanka Miroslav

    2014-09-01

    Full Text Available Cholinesterases are enzymes able to hydrolyze the neurotransmitter acetylcholine and thus to terminate transmission. Once the enzymes are inhibited, excitotoxicity can appear in the adjacent cells. It is well known that oxidative stress is involved in the toxicity of cholinesterase inhibitors. Commonly, stress follows inhibition of cholinesterases and disappears shortly afterwards. In the present experiment, it was decided to test the impact of an inhibitor, neostigmine, on oxidative stress in BALB/c mice after a longer interval. The animals were sacrificed three days after onset of the experiment and spleens and livers were collected. Reduced glutathione (GSH, glutathione reductase (GR, glutathione S-transferase (GST, thiobarbituric acid reactive substances (TBARS, ferric reducing antioxidant power (FRAP, caspase-3 and activity of acetylcholinesterase (AChE were assayed. The tested markers were not altered with exceptions of FRAP. The FRAP values indicate accumulation of low molecular weight antioxidants in the examined organs. The role of low molecular weight antioxidants in the toxicity of AChE inhibitors is discussed.

  7. Physical properties of beryllium oxide - Irradiation effects

    International Nuclear Information System (INIS)

    Elston, J.; Caillat, R.

    1958-01-01

    This work has been carried out in view of determining several physical properties of hot-pressed beryllium oxide under various conditions and the change of these properties after irradiation. Special attention has been paid on to the measurement of the thermal conductivity coefficient and thermal diffusivity coefficient. Several designs for the measurement of the thermal conductivity coefficient have been achieved. They permit its determination between 50 and 300 deg. C, between 400 and 800 deg. C. Some measurements have been made above 1000 deg. C. In order to measure the thermal diffusivity coefficient, we heat a perfectly flat surface of a sample in such a way that the heat flux is modulated (amplitude and frequency being adjustable). The thermal diffusivity coefficient is deduced from the variations of temperature observed on several spots. Tensile strength; compressive strength; expansion coefficient; sound velocity and crystal parameters have been also measured. Some of the measurements have been carried out after neutron irradiation. Some data have been obtained on the change of the properties of beryllium oxide depending on the integrated neutron flux. (author) [fr

  8. Input-parallel output-parallel (IPOP) three-level (TL) DC/DC converters with minimized capacitor ripple currents

    DEFF Research Database (Denmark)

    Liu, Dong; Deng, Fujin; Zhang, Qi

    2016-01-01

    , the component current stresses in the proposed converters are reduced. More significantly, the combination of the proposed IPOP TL circuit structure and the interleaving control strategy can largely reduce the ripple currents on the two input capacitors not only by doubling the frequencies of the ripple...... currents on two input capacitors but also by counteracting part of these ripple currents according to the operation principle of the proposed converters. Therefore, the proposed IPOP TL DC/DC converters with the interleaving control strategy can improve the performances of the converters in increasing...... the lifetimes of the input capacitors and minimizing the sizes of the input capacitors. Finally, the simulation and experimental results are presented to verify the effectiveness and feasibility of the proposed converters combined with the interleaving control strategy....

  9. Solvothermal Synthesis of Fe2O3 Loaded Activated Carbon as Electrode Materials for High-performance Electrochemical Capacitors

    International Nuclear Information System (INIS)

    Li, Ying; Kang, Litao; Bai, Gailing; Li, Peiyang; Deng, Jiachun; Liu, Xuguang; Yang, Yongzhen; Gao, Feng; Liang, Wei

    2014-01-01

    This article describes a facile solvothermal synthesis method to prepare Fe 2 O 3 /AC composites for electrochemical capacitors from Iron (III) chloride hexahydrate (FeCl 3 ·6H 2 O), activated carbon (AC, from petroleum coke), and four different precipitants (i.e., NaOH, CH 3 COONa, HMT, CO(NH 2 ) 2 ). X-ray powder diffraction (XRD), Scanning electron microscopy (SEM), Energy dispersive spectroscopy (EDS) and Thermogravimetric (TG) analysis show that the products consisted of nanosized α-Fe 2 O 3 (weight ratios: 48.1, 47.9, 44.2, 44.3%) loaded onto AC particles (∼ 20 μm). Significantly, both kind and dosage of precipitants exhibit effects on the specific capacitances of Fe 2 O 3 /AC composites. The highest specific capacitance reaches up to 240 F g −1 (at a current density of 1 A g −1 in 6 M KOH aqueous electrolyte) when the molar ratio of CH 3 COONa: FeCl 3 is 9. On the other hand, the sample prepared with NaOH: FeCl 3 molar ratio being 1.5 exhibits excellent rate capability with specific capacitance of 215 F g −1 at 1 A g −1 , and 89.3, 82.3, 78.1, 72.6 and 65.1% capacity retention at 2, 5, 10, 20, and 40 A g −1 , respectively. These electrochemical performances are superior to other materials consisted of Fe 2 O 3 /carbon nanotube (CNT), graphene oxide (GO) or reduced graphene oxide (rGO) composites, demonstrating the great potential of Fe 2 O 3 /AC composites in the development of high-performance electrode materials for electrochemical capacitors

  10. Effect of Magnesium Oxide Nanoparticles on Water Glass Structure

    Directory of Open Access Journals (Sweden)

    Bobrowski A.

    2012-09-01

    Full Text Available An attempt has been made to determine the effect of an addition of colloidal suspensions of the nanoparticles of magnesium oxide on the structure of water glass, which is a binder for moulding and core sands. Nanoparticles of magnesium oxide MgO in propanol and ethanol were introduced in the same mass content (5wt.% and structural changes were determined by measurement of the FT-IR absorption spectra.

  11. Effects of Uric Acid on Exercise-induced Oxidative Stress

    OpenAIRE

    平井, 富弘

    2001-01-01

    We studied effects of uric acid on exercise― induced oxidative stress in humans based on a hypothesis that uric acid acts as an antioxidant to prevent from exercise―induced oxidative stress. Relation between uric acid level in plasma and increase of thiobarbituric acid reactive substance (TBARS)after the cycle ergometer exercise was examined. Thiobarbituricacid reactive substance in plasma increased after the ergometer exercise. High uric acid in plasma did not result in low increase of TBARS...

  12. Transparent Ferroelectric Capacitors on Glass

    Directory of Open Access Journals (Sweden)

    Daniele Sette

    2017-10-01

    Full Text Available We deposited transparent ferroelectric lead zirconate titanate thin films on fused silica and contacted them via Al-doped zinc oxide (AZO transparent electrodes with an interdigitated electrode (IDE design. These layers, together with a TiO2 buffer layer on the fused silica substrate, are highly transparent (>60% in the visible optical range. Fully crystallized Pb(Zr0.52Ti0.48O3 (PZT films are dielectrically functional and exhibit a typical ferroelectric polarization loop with a remanent polarization of 15 μC/cm2. The permittivity value of 650, obtained with IDE AZO electrodes is equivalent to the one measured with Pt electrodes patterned with the same design, which proves the high quality of the developed transparent structures.

  13. THE EFFECT OF GROUP IIIA TO VIA ELEMENTS AND THEIR OXIDES ON GRAPHITE OXIDATION

    Energy Technology Data Exchange (ETDEWEB)

    Rakszawski, J F; Parker, W E

    1963-06-15

    The effect of group IIIA to VIA elements and oxides on graphite oxidation was determined. Additives were molded with spectroscopically pure graphite powder. The concentration was maintained constant at 0.1 mole percent based on the element. The rate of reaction with 1 atm of air was measured at 700 and 800 deg C. Air flow rate from 2000 to 3000 cc/min had no effect on the oxidation rate of the pure graphite at 700, 750, and 800 deg C indicating that reaction was not occurring in Zone III. The calculated Ea of 54 kcal/mole suggested reaction in Zone I. Visual inspection of the rods after reaction substantiated this conclusion. The reaction was first order with respect to oxygen partial pressure at 700 and 800 deg C. B, B/sub 2/O/sub 5/, P, and P/sub 2/ O/sub 6/ inhibited the oxid ation of graphite at 700 and 800 deg C while the other elements and oxides catalyzed the reaction to various degrees. The reaction remained kinetically of the first order when inhibited. A systematic variation in reaction rates appears to follow the diagonals of the periodic relationship of the element from the upper left to the lower right. These variations can be correlated with average ionization energy or electron affinity. (auth)

  14. Washing effect on superparamagnetic iron oxide nanoparticles

    Directory of Open Access Journals (Sweden)

    Laura-Karina Mireles

    2016-06-01

    Full Text Available Much recent research on nanoparticles has occurred in the biomedical area, particularly in the area of superparamagnetic iron oxide nanoparticles (SPIONs; one such area of research is in their use as magnetically directed prodrugs. It has been reported that nanoscale materials exhibit properties different from those of materials in bulk or on a macro scale [1]. Further, an understanding of the batch-to-batch reproducibility and uniformity of the SPION surface is essential to ensure safe biological applications, as noted in the accompanying article [2], because the surface is the first layer that affects the biological response of the human body. Here, we consider a comparison of the surface chemistries of a batch of SPIONs, before and after the supposedly gentle process of dialysis in water.

  15. Multilayer ceramic capacitors for pulsed power, high temperature applications

    International Nuclear Information System (INIS)

    Cygan, S.; McLarney, J.; Prymak, J.; Bohn, P.

    1991-01-01

    The performance of the multilayer ceramic capacitors (MLC) in high frequency power applications has improved significantly over the last years. One of the possible applications of MLC capacitors is the automotive industry where repetitive discharging of capacitors is required. A 0.25-μF capacitor using NPO dielectric subjected to repetitive discharging with the rate of 700 pulses per second, magnitude of 600-V and 195-A peak currents showed no degradation in performance at 298 K or 398 K even after 1 billion discharge cycles. Less than a 5-K temperature rise was observed under these conditions. The most exciting, newly emerging utilization for MLC capacitors, however, might be the high temperature application (up to 473 K for underhood utilization), where ceramic capacitors with higher volumetric efficiency as compared to glass or polymer type capacitors prove very superior. Moreover ceramic capacitors, which next to glass capacitors exhibit the greatest radiation resistance among all insulating materials (Hanks and Hamman 1971), might also be best suited in the future for high temperature operation in space environment. The pulsed power performance of the 0.25-μF NPO capacitor was evaluated under repetitive discharge conditions (200 V, 700 pps) at high temperature, 473 K, and the results are presented in this paper

  16. A 100 MS/s 9 bit 0.43 mW SAR ADC with custom capacitor array

    Science.gov (United States)

    Jingjing, Wang; Zemin, Feng; Rongjin, Xu; Chixiao, Chen; Fan, Ye; Jun, Xu; Junyan, Ren

    2016-05-01

    A low power 9 bit 100 MS/s successive approximation register analog-to-digital converter (SAR ADC) with custom capacitor array is presented. A brand-new 3-D MOM unit capacitor is used as the basic capacitor cell of this capacitor array. The unit capacitor has a capacitance of 1 fF. Besides, the advanced capacitor array structure and switch mode decrease the power consumption a lot. To verify the effectiveness of this low power design, the 9 bit 100 MS/s SAR ADC is implemented in TSMC IP9M 65 nm LP CMOS technology. The measurement results demonstrate that this design achieves an effective number of bits (ENOB) of 7.4 bit, a signal-to-noise plus distortion ratio (SNDR) of 46.40 dB and a spurious-free dynamic range (SFDR) of 62.31 dB at 100 MS/s with 1 MHz input. The SAR ADC core occupies an area of 0.030 mm2 and consumes 0.43 mW under a supply voltage of 1.2 V. The figure of merit (FOM) of the SAR ADC achieves 23.75 fJ/conv. Project supported by the National High-Tech Research and Development Program of China (No. 2013AA014101).

  17. Significance of the double-layer capacitor effect in polar rubbery dielectrics and exceptionally stable low-voltage high transconductance organic transistors.

    Science.gov (United States)

    Wang, Chao; Lee, Wen-Ya; Kong, Desheng; Pfattner, Raphael; Schweicher, Guillaume; Nakajima, Reina; Lu, Chien; Mei, Jianguo; Lee, Tae Hoon; Wu, Hung-Chin; Lopez, Jeffery; Diao, Ying; Gu, Xiaodan; Himmelberger, Scott; Niu, Weijun; Matthews, James R; He, Mingqian; Salleo, Alberto; Nishi, Yoshio; Bao, Zhenan

    2015-12-14

    Both high gain and transconductance at low operating voltages are essential for practical applications of organic field-effect transistors (OFETs). Here, we describe the significance of the double-layer capacitance effect in polar rubbery dielectrics, even when present in a very low ion concentration and conductivity. We observed that this effect can greatly enhance the OFET transconductance when driven at low voltages. Specifically, when the polar elastomer poly(vinylidene fluoride-co-hexafluoropropylene) (e-PVDF-HFP) was used as the dielectric layer, despite a thickness of several micrometers, we obtained a transconductance per channel width 30 times higher than that measured for the same organic semiconductors fabricated on a semicrystalline PVDF-HFP with a similar thickness. After a series of detailed experimental investigations, we attribute the above observation to the double-layer capacitance effect, even though the ionic conductivity is as low as 10(-10) S/cm. Different from previously reported OFETs with double-layer capacitance effects, our devices showed unprecedented high bias-stress stability in air and even in water.

  18. Significance of the double-layer capacitor effect in polar rubbery dielectrics and exceptionally stable low-voltage high transconductance organic transistors

    Science.gov (United States)

    Wang, Chao; Lee, Wen-Ya; Kong, Desheng; Pfattner, Raphael; Schweicher, Guillaume; Nakajima, Reina; Lu, Chien; Mei, Jianguo; Lee, Tae Hoon; Wu, Hung-Chin; Lopez, Jeffery; Diao, Ying; Gu, Xiaodan; Himmelberger, Scott; Niu, Weijun; Matthews, James R.; He, Mingqian; Salleo, Alberto; Nishi, Yoshio; Bao, Zhenan

    2015-01-01

    Both high gain and transconductance at low operating voltages are essential for practical applications of organic field-effect transistors (OFETs). Here, we describe the significance of the double-layer capacitance effect in polar rubbery dielectrics, even when present in a very low ion concentration and conductivity. We observed that this effect can greatly enhance the OFET transconductance when driven at low voltages. Specifically, when the polar elastomer poly(vinylidene fluoride-co-hexafluoropropylene) (e-PVDF-HFP) was used as the dielectric layer, despite a thickness of several micrometers, we obtained a transconductance per channel width 30 times higher than that measured for the same organic semiconductors fabricated on a semicrystalline PVDF-HFP with a similar thickness. After a series of detailed experimental investigations, we attribute the above observation to the double-layer capacitance effect, even though the ionic conductivity is as low as 10–10 S/cm. Different from previously reported OFETs with double-layer capacitance effects, our devices showed unprecedented high bias-stress stability in air and even in water. PMID:26658331

  19. Diagnostics and performance evaluation of multikilohertz capacitors

    International Nuclear Information System (INIS)

    McDuff, G.; Nunnally, W.C.; Rust, K.; Sarjeant, J.

    1980-01-01

    The observed performance of nanofarad polypropylene-silicone oil, mica paper, and polytetrafluoroethylene-silicone oil capacitors discharged in a 100-ns, 1-kA pulse with a pulse repetition frequency of 1 kHz is presented. The test facility circuit, diagnostic parameters, and the preliminary test schedule are outlined as a basis for discussion of the observed failure locations and proposed failure mechanisms. Most of the test data and discussion presented involves the polypropylene-silicone oil units

  20. Super dielectric capacitor using scaffold dielectric

    OpenAIRE

    Phillips, Jonathan

    2018-01-01

    Patent A capacitor having first and second electrodes and a scaffold dielectric. The scaffold dielectric comprises an insulating material with a plurality of longitudinal channels extending across the dielectric and filled with a liquid comprising cations and anions. The plurality of longitudinal channels are substantially parallel and the liquid within the longitudinal channels generally has an ionic strength of at least 0.1. Capacitance results from the migrations of...

  1. Capacitance of carbon-based electrical double-layer capacitors.

    Science.gov (United States)

    Ji, Hengxing; Zhao, Xin; Qiao, Zhenhua; Jung, Jeil; Zhu, Yanwu; Lu, Yalin; Zhang, Li Li; MacDonald, Allan H; Ruoff, Rodney S

    2014-01-01

    Experimental electrical double-layer capacitances of porous carbon electrodes fall below ideal values, thus limiting the practical energy densities of carbon-based electrical double-layer capacitors. Here we investigate the origin of this behaviour by measuring the electrical double-layer capacitance in one to five-layer graphene. We find that the capacitances are suppressed near neutrality, and are anomalously enhanced for thicknesses below a few layers. We attribute the first effect to quantum capacitance effects near the point of zero charge, and the second to correlations between electrons in the graphene sheet and ions in the electrolyte. The large capacitance values imply gravimetric energy storage densities in the single-layer graphene limit that are comparable to those of batteries. We anticipate that these results shed light on developing new theoretical models in understanding the electrical double-layer capacitance of carbon electrodes, and on opening up new strategies for improving the energy density of carbon-based capacitors.

  2. Strong impacts on aerosol indirect effects from historical oxidant changes

    Science.gov (United States)

    Hafsahl Karset, Inger Helene; Koren Berntsen, Terje; Storelvmo, Trude; Alterskjær, Kari; Grini, Alf; Olivié, Dirk; Kirkevåg, Alf; Seland, Øyvind; Iversen, Trond; Schulz, Michael

    2018-06-01

    Uncertainties in effective radiative forcings through aerosol-cloud interactions (ERFaci, also called aerosol indirect effects) contribute strongly to the uncertainty in the total preindustrial-to-present-day anthropogenic forcing. Some forcing estimates of the total aerosol indirect effect are so negative that they even offset the greenhouse gas forcing. This study highlights the role of oxidants in modeling of preindustrial-to-present-day aerosol indirect effects. We argue that the aerosol precursor gases should be exposed to oxidants of its era to get a more correct representation of secondary aerosol formation. Our model simulations show that the total aerosol indirect effect changes from -1.32 to -1.07 W m-2 when the precursor gases in the preindustrial simulation are exposed to preindustrial instead of present-day oxidants. This happens because of a brightening of the clouds in the preindustrial simulation, mainly due to large changes in the nitrate radical (NO3). The weaker oxidative power of the preindustrial atmosphere extends the lifetime of the precursor gases, enabling them to be transported higher up in the atmosphere and towards more remote areas where the susceptibility of the cloud albedo to aerosol changes is high. The oxidation changes also shift the importance of different chemical reactions and produce more condensate, thus increasing the size of the aerosols and making it easier for them to activate as cloud condensation nuclei.

  3. Strong impacts on aerosol indirect effects from historical oxidant changes

    Directory of Open Access Journals (Sweden)

    I. H. H. Karset

    2018-06-01

    Full Text Available Uncertainties in effective radiative forcings through aerosol–cloud interactions (ERFaci, also called aerosol indirect effects contribute strongly to the uncertainty in the total preindustrial-to-present-day anthropogenic forcing. Some forcing estimates of the total aerosol indirect effect are so negative that they even offset the greenhouse gas forcing. This study highlights the role of oxidants in modeling of preindustrial-to-present-day aerosol indirect effects. We argue that the aerosol precursor gases should be exposed to oxidants of its era to get a more correct representation of secondary aerosol formation. Our model simulations show that the total aerosol indirect effect changes from −1.32 to −1.07 W m−2 when the precursor gases in the preindustrial simulation are exposed to preindustrial instead of present-day oxidants. This happens because of a brightening of the clouds in the preindustrial simulation, mainly due to large changes in the nitrate radical (NO3. The weaker oxidative power of the preindustrial atmosphere extends the lifetime of the precursor gases, enabling them to be transported higher up in the atmosphere and towards more remote areas where the susceptibility of the cloud albedo to aerosol changes is high. The oxidation changes also shift the importance of different chemical reactions and produce more condensate, thus increasing the size of the aerosols and making it easier for them to activate as cloud condensation nuclei.

  4. A study of nitroxide polyradical/activated carbon composite as the positive electrode material for electrochemical hybrid capacitor

    Energy Technology Data Exchange (ETDEWEB)

    Li, Hui-qiao; Zou, Ying; Xia, Yong-yao [Chemistry Department and Shanghai Key Laboratory of Molecular Catalysis and Innovative Materials, Fudan University, Shanghai 200433 (China)

    2007-01-01

    We present a new concept of the hybrid electrochemical capacitor technology in which a poly(2,2,6,6-tetramethylpiperidinyloxy methacrylate) nitroxide polyradical/activated carbon composite (PTMA-AC) is used as the positive electrode material and activated carbon is used as the negative electrode material. On the positive electrode, both reversible reduction and oxidation of nitroxide polyradical and non-faradic ion sorption/de-sorption of activated carbon are involved during charge and discharge process. The capacity of the composite electrode is 30% larger than that of the pure activated carbon electrode. A hybrid capacitor fabricated by the PTMA-AC composite positive electrode and the activated carbon negative electrode shows a good cycling life, it can be charged/discharged for over 1000 cycles with slight capacity loss. The hybrid capacitor also has a good rate capability, it maintains 80% of the initial capacity even at the high discharge current of up to 20C. (author)

  5. Reaching state-of-the art requirements for MIM capacitors with a single-layer anodic Al2O3 dielectric and imprinted electrodes

    Science.gov (United States)

    Hourdakis, Emmanouel; Nassiopoulou, Androula G.

    2017-07-01

    Metal-Insulator-Metal (MIM) capacitors with a high capacitance density and low non-linearity coefficient using a single-layer dielectric of barrier-type anodic alumina (Al2O3) and an imprinted bottom Al electrode are presented. Imprinting of the bottom electrode aimed at increasing the capacitor effective surface area by creating a three-dimensional MIM capacitor architecture. The bottom Al electrode was only partly nanopatterned so as to ensure low series resistance of the MIM capacitor. With a 3 nm thick anodic Al2O3 dielectric, the capacitor with the imprinted electrode showed a 280% increase in capacitance density compared to the flat electrode capacitor, reaching a value of 20.5 fF/μm2. On the other hand, with a 30 nm thick anodic Al2O3 layer, the capacitance density was 7.9 fF/μm2 and the non-linearity coefficient was as low as 196 ppm/V2. These values are very close to reaching all requirements of the last International Technology Roadmap for Semiconductors for MIM capacitors [ITRS, http://www.itrs2.net/2013-itrs.html for ITRS Roadmap (2013)], and they are achieved by a single-layer dielectric instead of the complicated dielectric stacks of the literature. The obtained results constitute a real progress compared to previously reported results by our group for MIM capacitors using imprinted electrodes.

  6. A compact seven switches topology and reduced DC-link capacitor size for single-phase stand-alone PV system with hybrid energy storages

    DEFF Research Database (Denmark)

    Liu, Xiong; Wang, Peng; Loh, Poh Chiang

    2011-01-01

    Single-phase stand-alone PV system is suitable for household applications in remote area. Hybrid battery/ultra-capacitor energy storage can reduce charge and discharge cycles and avoid deep discharges of battery. This paper proposes a compact seven switches structure for stand-alone PV system......, which otherwise needs nine switches configuration, inclusive of one switch for boost converter, four switches for single-phase inverter and four switches for two DC/DC converters of battery and ultra-capacitor. It is well-known that a bulky DC-link capacitor is always required to absorb second......-order harmonic current caused by single-phase inverter. In the proposed compact topology, a small size DC-link capacitor can achieve the same function through charging/discharging control of ultra-capacitor to mitigate second-order ripple current. Simulation results are provided to validate the effectiveness...

  7. Effects of tocopherols on oxidative stability of margarine

    International Nuclear Information System (INIS)

    Azizkhani, M.; Kamkar, A.; Nejad, A.S.M.

    2011-01-01

    Tocopherols are the most important natural antioxidants which are now added to edible oils. Each individual tocopherol (a, beta and gamma) was added to the oil phase of margarine in 0 (control), 100, 250, and 500 ppm. Anti oxidative activity was evaluated through oven test (at 60 +- 1 deg. C in 5 days and measuring peroxide value and anisidine value) and Ransimat test (110 +- 1 deg. C). Anti oxidative activity increased progressively as concentration of gamma-tocopherol increased. As the concentration of gamma-tocopherol increased from 0 to 100, and 250 ppm, oxidation of oil phase decreased. At 500 ppm, a-tocopherol acted as a prooxidant and gamma-tocopherol did not have any noticable effect, but gamma-tocopherol acted as an antioxidant. The order of anti oxidative activity of tocopherols was: a- < beta- < gamma-. (author)

  8. Graphene-graphite oxide field-effect transistors.

    Science.gov (United States)

    Standley, Brian; Mendez, Anthony; Schmidgall, Emma; Bockrath, Marc

    2012-03-14

    Graphene's high mobility and two-dimensional nature make it an attractive material for field-effect transistors. Previous efforts in this area have used bulk gate dielectric materials such as SiO(2) or HfO(2). In contrast, we have studied the use of an ultrathin layered material, graphene's insulating analogue, graphite oxide. We have fabricated transistors comprising single or bilayer graphene channels, graphite oxide gate insulators, and metal top-gates. The graphite oxide layers show relatively minimal leakage at room temperature. The breakdown electric field of graphite oxide was found to be comparable to SiO(2), typically ~1-3 × 10(8) V/m, while its dielectric constant is slightly higher, κ ≈ 4.3. © 2012 American Chemical Society

  9. Effect of curcumin against oxidation of biomolecules by hydroxyl radicals.

    Science.gov (United States)

    Borra, Sai Krishna; Mahendra, Jaideep; Gurumurthy, Prema; Jayamathi; Iqbal, Shabeer S; Mahendra, Little

    2014-10-01

    Among various reactive oxygen species, hydroxyl radicals have the strongest chemical activity, which can damage a wide range of essential biomolecules such as lipids, proteins, and DNA. The objective of this study was to investigate the beneficial effects of curcumin on prevention of oxidative damage of biomolecules by hydroxyl radicals generated in in vitro by a Fenton like reaction. We have incubated the serum, plasma and whole blood with H2O2/Cu2+/ Ascorbic acid system for 4 hours at 37 0C and observed the oxidation of biomolecules like albumin, lipids, proteins and DNA. Curcumin at the concentrations of 50,100 and 200 μmoles, prevented the formation of ischemia modified albumin, MDA, protein carbonyls, oxidized DNA and increased the total antioxidant levels and GSH significantly. These observations suggest the hydroxyl radical scavenging potentials of curcumin and protective actions to prevent the oxidation of biomolecules by hydroxyl radicals.

  10. Effects of ethanol extract of Bersama engleriana leaves on oxidative ...

    African Journals Online (AJOL)

    Pesticides are used to improve agricultural yields; meanwhile they have detrimental effects on human and animal reproduction. This study aimed at evaluating the protective effects of ethanol extract of Bersama engleriana leaves against cypermethrin-induced oxidative stress and reproductive toxicity. Fifty male guinea.

  11. Effects of heat-activated persulfate oxidation on soil microorganisms

    DEFF Research Database (Denmark)

    Tsitonaki, Aikaterini; Smets, Barth F.; Bjerg, Poul Løgstrup

    2008-01-01

    /L). The results emphasize the necessity of using multiple toxicity assays and indigenous cultures in order to realistically assess the potential effects of in situ chemical oxidation on soil microorganisms. A comparison to other studies suggests that the effects of activated persulfate on soil microorganisms...

  12. Oxidants and anti-oxidants in turbot seminal plasma and their effects on sperm quality

    Science.gov (United States)

    Han, Mingming; Ding, Fuhong; Meng, Zhen; Lei, Jilin

    2015-08-01

    In this research, the concentration and activity of oxidants and anti-oxidants in turbot semen, and their effects on sperm quality were studied. The results showed that superoxide dismutase (SOD), catalase, glutathione reductase (GR), uric acid, vitamin E (VE) and vitamin C (VC) were more abundant in seminal plasma than in spermatozoa. The variation for each of them was specific. In seminal plasma, the activity of SOD and GR increased from November 15, November 30 to December 15, and then decreased on December 30. The concentrations of both VC and uric acid decreased during the first 3 sampling times and increased on December 30. The oxidants in seminal plasma accumulated to the highest on December 30. Lactic acid (LA) and ATP levels decreased to the lowest on December 30. The correlation analysis showed that GR had the significant positive relevance to sperm motility and VSL/VCL, while ·OH had negative relevance to them.

  13. Quantum and field effects of oxide heterostructures

    DEFF Research Database (Denmark)

    Trier, Felix

    . In these multi-plexed devices, several inputs aretranslated into several outputs through the multiple physical functionalities.A highly prominent example of such an oxide interface is the one between LaAlO3 and SrTiO3. Although both LaAlO3 and SrTiO3 in the bulk are electrically insulating and non-magnetic......, their interface nonetheless shows attractive properties such as metallic conductivity, superconductivity and ferro magnetism.This thesis will provide an extensive review of the literature concerning the interface metal found in LaAlO3/SrTiO3 as well as in other SrTiO3-based hetero structures. Through this review...... in two different SrTiO3-based heterostructures. Here, it is shown that the interface between amorphous-LaAlO3 and SrTiO3 is superconducting with a larger critical transition temperature than that in LaAlO3/SrTiO3. For γ-Al2O3/SrTiO3 it is shown that non-volatile bipolar resistance switching is possible...

  14. Use of water vapor for suppressing the growth of unstable low-{kappa} interlayer in HfTiO gate-dielectric Ge metal-oxide-semiconductor capacitors with sub-nanometer capacitance equivalent thickness

    Energy Technology Data Exchange (ETDEWEB)

    Xu, J.P. [Department of Electronic Science and Technology, Huazhong University of Science and Technology, Wuhan, 430074 (China); Zou, X. [School of Electromachine and Architecture Engineering, Jianghan University, Wuhan, 430056 (China); Lai, P.T. [Department of Electrical and Electronic Engineering, University of Hong Kong, Pokfulam Road (Hong Kong)], E-mail: laip@eee.hku.hk; Li, C.X.; Chan, C.L. [Department of Electrical and Electronic Engineering, University of Hong Kong, Pokfulam Road (Hong Kong)

    2009-03-02

    Annealing of high-permittivity HfTiO gate dielectric on Ge substrate in different gases (N{sub 2}, NH{sub 3}, NO and N{sub 2}O) with or without water vapor is investigated. Analysis by transmission electron microscopy indicates that the four wet anneals can greatly suppress the growth of a GeO{sub x} interlayer at the dielectric/Ge interface, and thus decrease interface states, oxide charges and gate leakage current. Moreover, compared with the wet N{sub 2} anneal, the wet NH{sub 3}, NO and N{sub 2}O anneals decrease the equivalent permittivity of the gate dielectric due to the growth of a GeO{sub x}N{sub y} interlayer. Among the eight anneals, the wet N{sub 2} anneal produces the best dielectric performance with an equivalent relative permittivity of 35, capacitance equivalent thickness of 0.81 nm, interface-state density of 6.4 x 10{sup 11} eV{sup -1} cm{sup -2} and gate leakage current of 2.7 x 10{sup -4} A/cm{sup 2} at V{sub g} = 1 V.

  15. Use of water vapor for suppressing the growth of unstable low-κ interlayer in HfTiO gate-dielectric Ge metal-oxide-semiconductor capacitors with sub-nanometer capacitance equivalent thickness

    International Nuclear Information System (INIS)

    Xu, J.P.; Zou, X.; Lai, P.T.; Li, C.X.; Chan, C.L.

    2009-01-01

    Annealing of high-permittivity HfTiO gate dielectric on Ge substrate in different gases (N 2 , NH 3 , NO and N 2 O) with or without water vapor is investigated. Analysis by transmission electron microscopy indicates that the four wet anneals can greatly suppress the growth of a GeO x interlayer at the dielectric/Ge interface, and thus decrease interface states, oxide charges and gate leakage current. Moreover, compared with the wet N 2 anneal, the wet NH 3 , NO and N 2 O anneals decrease the equivalent permittivity of the gate dielectric due to the growth of a GeO x N y interlayer. Among the eight anneals, the wet N 2 anneal produces the best dielectric performance with an equivalent relative permittivity of 35, capacitance equivalent thickness of 0.81 nm, interface-state density of 6.4 x 10 11 eV -1 cm -2 and gate leakage current of 2.7 x 10 -4 A/cm 2 at V g = 1 V

  16. Frequency and voltage dependent profile of dielectric properties, electric modulus and ac electrical conductivity in the PrBaCoO nanofiber capacitors

    Directory of Open Access Journals (Sweden)

    S. Demirezen

    Full Text Available In this study, praseodymium barium cobalt oxide nanofiber interfacial layer was sandwiched between Au and n-Si. Frequency and voltage dependence of ε′, ε′, tanδ, electric modulus (M′ and M″ and σac of PrBaCoO nanofiber capacitor have been investigated by using impedance spectroscopy method. The obtained experimental results show that the values of ε′, ε′, tanδ, M′, M″ and σac of the PrBaCoO nanofiber capacitor are strongly dependent on frequency of applied bias voltage. The values of ε′, ε″ and tanδ show a steep decrease with increasing frequency for each forward bias voltage, whereas the values of σac and the electric modulus increase with increasing frequency. The high dispersion in ε′ and ε″ values at low frequencies may be attributed to the Maxwell–Wagner and space charge polarization. The high values of ε′ may be due to the interfacial effects within the material, PrBaCoO nanofibers interfacial layer and electron effect. The values of M′ and M″ reach a maximum constant value corresponding to M∞ ≈ 1/ε∞ due to the relaxation process at high frequencies, but both the values of M′ and M″ approach almost to zero at low frequencies. The changes in the dielectric and electrical properties with frequency can be also attributed to the existence of Nss and Rs of the capacitors. As a result, the change in the ε′, ε″, tanδ, M′, M″ and ac electric conductivity (σac is a result of restructuring and reordering of charges at the PrBaCoO/n-Si interface under an external electric field or voltage and interface polarization. Keywords: Thin films, Electrical properties, Interface/interphase

  17. SUPER-CAPACITOR APPLICATION IN ELECTRICAL POWER CABLE TESTING FACILITIES IN THERMAL ENDURANCE AND MECHANICAL BRACING TESTS

    Directory of Open Access Journals (Sweden)

    I. V. Oleksyuk

    2015-01-01

    Full Text Available The current-carrying cores of the electrical power cables should be resistant to effects of short-circuit currents whose values depend on the material of the core, its cross-sectional area, cable insulation properties, environment temperature, and the duration of the short-circuit current flow (1 and 3–4 sec. when tested for thermal endurance and mechanical bracing. The facilities for testing the 10 kV aluminum core cables with short-circuit current shall provide mechanical-bracing current 56,82 kA and thermal endurance current 11,16 kA. Although capacitors provide such values of the testing currents to the best advantage, utilizing conventional capacitor-units will involve large expenditures for erecting and  running a separate building. It is expedient to apply super-capacitors qua the electric power supply for testing facilities, as they are capacitors with double-electrical layer and involve the current values of tens of kilo-amperes.The insulation voltage during short-circuit current testing being not-standardized, it is not banned to apply voltages less than 10 kV when performing short-circuit thermal endurance and mechanical bracing tests for electrical power cables of 10 kV. The super-capacitor voltage variation-in-time graph consists of two regions: capacitive and resistive. The capacitive part corresponds to the voltage change consequent on the energy change in the super-capacitors. The resistive part shows the voltage variation due to the active resistance presence in the super-capacitor.The author offers the algorithm determining the number of super capacitors requisite for testing 10 kV-electrical power cables with short-circuit currents for thermal endurance and mechanical bracing. The paper shows that installation of super-capacitors in the facilities testing the cables with short-circuit currents reduces the area needed for the super-capacitors in comparison with conventional capacitors more than by one order of magnitude.

  18. Capacitor requirements for controlled thermonuclear experiments and reactors

    International Nuclear Information System (INIS)

    Boicourt, G.P.; Hoffman, P.S.

    1975-01-01

    Future controlled thermonuclear experiments as well as controlled thermonuclear reactors will require substantial numbers of capacitors. The demands on these units are likely to be quite severe and quite different from the normal demands placed on either present energy storage capacitors or present power factor correction capacitors. It is unlikely that these two types will suffice for all necessary Controlled Thermonuclear Research (CTR) applications. The types of capacitors required for the various CTR operating conditions are enumerated. Factors that influence the life, cost and operating abilities of these types of capacitors are discussed. The problems of capacitors in a radiation environment are considered. Areas are defined where future research is needed. Some directions that this research should take are suggested. (U.S.)

  19. Capacitor requirements for controlled thermonuclear experiments and reactors

    International Nuclear Information System (INIS)

    Boicourt, G.P.; Hoffman, P.S.

    1975-01-01

    Future controlled thermonuclear experiments as well as controlled thermonuclear reactors will require substantial numbers of capacitors. The demands on these units are likely to be quite severe and quite different from the normal demands placed on either present energy storage capacitors or present power factor correction capacitors. It is unlikely that these two types will suffice for all necessary Controlled Thermonuclear Research (CTR) applications. The types of capacitors required for the various CTR operating conditions are enumerated. Factors that influence the life, cost and operating abilities of these types of capacitors are discussed. The problems of capacitors in a radiation environment are considered. Areas are defined where future research is needed. Some directions that this research should take are suggested

  20. A compact 100 kV high voltage glycol capacitor.

    Science.gov (United States)

    Wang, Langning; Liu, Jinliang; Feng, Jiahuai

    2015-01-01

    A high voltage capacitor is described in this paper. The capacitor uses glycerol as energy storage medium, has a large capacitance close to 1 nF, can hold off voltages of up to 100 kV for μs charging time. Allowing for low inductance, the capacitor electrode is designed as coaxial structure, which is different from the common structure of the ceramic capacitor. With a steady capacitance at different frequencies and a high hold-off voltage of up to 100 kV, the glycol capacitor design provides a potential substitute for the ceramic capacitors in pulse-forming network modulator to generate high voltage pulses with a width longer than 100 ns.

  1. High power density capacitor and method of fabrication

    Science.gov (United States)

    Tuncer, Enis

    2012-11-20

    A ductile preform for making a drawn capacitor includes a plurality of electrically insulating, ductile insulator plates and a plurality of electrically conductive, ductile capacitor plates. Each insulator plate is stacked vertically on a respective capacitor plate and each capacitor plate is stacked on a corresponding insulator plate in alignment with only one edge so that other edges are not in alignment and so that each insulator plate extends beyond the other edges. One or more electrically insulating, ductile spacers are disposed in horizontal alignment with each capacitor plate along the other edges and the pattern is repeated so that alternating capacitor plates are stacked on alternating opposite edges of the insulator plates. A final insulator plate is positioned at an extremity of the preform. The preform may then be drawn to fuse the components and decrease the dimensions of the preform that are perpendicular to the direction of the draw.

  2. Super capacitor modeling with artificial neural network (ANN)

    Energy Technology Data Exchange (ETDEWEB)

    Marie-Francoise, J.N.; Gualous, H.; Berthon, A. [Universite de Franche-Comte, Lab. en Electronique, Electrotechnique et Systemes (L2ES), UTBM, INRETS (LRE T31) 90 - Belfort (France)

    2004-07-01

    This paper presents super-capacitors modeling using Artificial Neural Network (ANN). The principle consists on a black box nonlinear multiple inputs single output (MISO) model. The system inputs are temperature and current, the output is the super-capacitor voltage. The learning and the validation of the ANN model from experimental charge and discharge of super-capacitor establish the relationship between inputs and output. The learning and the validation of the ANN model use experimental results of 2700 F, 3700 F and a super-capacitor pack. Once the network is trained, the ANN model can predict the super-capacitor behaviour with temperature variations. The update parameters of the ANN model are performed thanks to Levenberg-Marquardt method in order to minimize the error between the output of the system and the predicted output. The obtained results with the ANN model of super-capacitor and experimental ones are in good agreement. (authors)

  3. Method of manufacturing a shapeable short-resistant capacitor

    Science.gov (United States)

    Taylor, Ralph S.; Myers, John D.; Baney, William J.

    2013-04-02

    A method that employs a novel combination of conventional fabrication techniques provides a ceramic short-resistant capacitor that is bendable and/or shapeable to provide a multiple layer capacitor that is extremely compact and amenable to desirable geometries. The method allows thinner and more flexible ceramic capacitors to be made. The method includes forming a first thin metal layer on a substrate; depositing a thin, ceramic dielectric layer over the metal layer; depositing a second thin metal layer over the dielectric layer to form a capacitor exhibiting a benign failure mode; and separating the capacitor from the substrate. The method may also include bending the resulting capacitor into a serpentine arrangement with gaps between the layers that allow venting of evaporated electrode material in the event of a benign failure.

  4. The effects of trace element content on pyrite oxidation rates

    Science.gov (United States)

    Gregory, D. D.; Lyons, T.; Cliff, J. B.; Perea, D. E.; Johnson, A.; Romaniello, S. J.; Large, R. R.

    2017-12-01

    Pyrite acts as both an important source and sink for many different metals and metalloids in the environment, including many that are toxic. Oxidation of pyrite can release these elements while at the same time producing significant amounts of sulfuric acid. Such issues are common in the vicinity of abandoned mines and smelters, but, as pyrite is a common accessory mineral in many different lithologies, significant pyrite oxidation can occur whenever pyritic rocks are exposed to oxygenated water or the atmosphere. Accelerated exposure to oxygen can occur during deforestation, fracking for petroleum, and construction projects. Geochemical models for pyrite oxidation can help us develop strategies to mitigate these deleterious effects. An important component of these models is an accurate pyrite oxidation rate; however, current pyrite oxidation rates have been determined using relatively pure pyrite. Natural pyrite is rarely pure and has a wide range of trace element concentrations that may affect the oxidation rate. Furthermore, the position of trace elements within the mineral lattice can also affect the oxidation rate. For example, elements such as Ni and Co, which substitute into the pyrite lattice, are thought to stabilize the lattice and thus prevent pyrite oxidation. Alternatively, trace elements that are held within inclusions of other minerals could form a galvanic cell with the surrounding pyrite, thus enhancing pyrite oxidation rates. In this study, we present preliminary analyses from three different pyrite oxidation experiments each using natural pyrite with different trace element compositions. These results show that the pyrite with the highest trace element concentration has approximately an order of magnitude higher oxidation rate compared to the lowest trace element sample. To further elucidate the mechanisms, we employed microanalytical techniques to investigate how the trace elements are held within the pyrite. LA-ICPMS was used to determine the

  5. An Aqueous Metal-ion Capacitor with Oxidised Carbon Nanotubes and Metallic Zinc Electrodes

    Directory of Open Access Journals (Sweden)

    Yuheng Tian

    2016-10-01

    Full Text Available An aqueous metal ion capacitor comprising of a zinc anode, an oxidized carbon nanotubes (oCNTs cathode and a zinc sulfate electrolyte is reported. Since the shuttling cation is Zn2+, this typical metal ion capacitor is named as zinc-ion capacitor (ZIC. The ZIC integrates the divalent zinc stripping/plating chemistry with the surface-enabled pseudocapacitive cation adsorption/desorption on oCNTs. The surface chemistry and crystallographic structure of oCNTs were extensively characterized by combining X-ray photoelectron spectroscopy, Fourier-transformed infrared spectroscopy, Raman spectroscopy and X-ray powder diffraction. The function of the surface oxygen groups in surface cation storage was elucidated by a series of electrochemical measurement and the surface-enabled ZIC showed better performance than the ZIC with an un-oxidized CNT cathode. The reaction mechanism at the oCNT cathode involves the additional reversible Faradaic process, while the CNTs merely show electric double layer capacitive behavior involving a non-Faradaic process. The aqueous hybrid ZIC comprising the oCNT cathode exhibited a specific capacitance of 20 mF cm-2 (corresponding to 53 F g-1 in the range of 0-1.8 V at 10 mV s-1 and a stable cycling performance up to 5000 cycles.

  6. Self-discharge of AC/AC electrochemical capacitors in salt aqueous electrolyte

    International Nuclear Information System (INIS)

    García-Cruz, L.; Ratajczak, P.; Iniesta, J.; Montiel, V.; Béguin, F.

    2016-01-01

    The self-discharge (SD) of electrochemical capacitors based on activated carbon electrodes (AC/AC capacitors) in aqueous lithium sulfate was examined after applying a three-hour cell potential hold at U i values from 1.0 to 1.6 V. The leakage current measured during the potentiostatic period as well as the amplitude of self-discharge increased with U i ; the cell potential drop was approximately doubled by 10 °C increase of temperature. The potential decay of both negative and positive electrodes was explored separately, by introducing a reference electrode and it was found that the negative electrode contributes essentially to the capacitor self-discharge. A diffusion-controlled mechanism was found at U i ≤ 1.4 V and U i ≤ 1.2 V for the positive and negative electrodes, respectively. At higher U i of 1.6 V, both electrodes display an activation-controlled mechanism due to water oxidation and subsequent carbon oxidation at the positive electrode and water or oxygen reduction at the negative electrode.

  7. Clumped isotope effects during OH and Cl oxidation of methane

    DEFF Research Database (Denmark)

    Whitehill, Andrew R.; Joelsson, Lars Magnus T.; Schmidt, Johan Albrecht

    2017-01-01

    A series of experiments were carried out to determine the clumped (13CH3D) methane kinetic isotope effects during oxidation of methane by OH and Cl radicals, the major sink reactions for atmospheric methane. Experiments were performed in a 100 L quartz photochemical reactor, in which OH was produ......A series of experiments were carried out to determine the clumped (13CH3D) methane kinetic isotope effects during oxidation of methane by OH and Cl radicals, the major sink reactions for atmospheric methane. Experiments were performed in a 100 L quartz photochemical reactor, in which OH...... effects for singly substituted species were consistent with previous experimental studies. For doubly substituted methane, 13CH3D, the observed kinetic isotope effects closely follow the product of the kinetic isotope effects for the 13C and deuterium substituted species (i.e., 13,2KIE = 13KIE × 2KIE...... reactions. In a closed system, however, this effect is overtaken by the large D/H isotope effect, which causes the residual methane to become anti-clumped relative to the initial methane. Based on these results, we demonstrate that oxidation of methane by OH, the predominant oxidant for tropospheric methane...

  8. Lifetime Estimation of DC-link Capacitors in a Single-phase Converter with an Integrated Active Power Decoupling Module

    DEFF Research Database (Denmark)

    Ma, Siyuan; Wang, Haoran; Tang, Junchaojie

    2016-01-01

    In single-phase inverters, DC-link capacitors are installed at the DC-link to buffer the ripple power between the AC side and DC side. Active decoupling methods introduce additional circuits at the DC side or AC side to partially or fully supply the ripple power. So that the demanded DC-link capa......In single-phase inverters, DC-link capacitors are installed at the DC-link to buffer the ripple power between the AC side and DC side. Active decoupling methods introduce additional circuits at the DC side or AC side to partially or fully supply the ripple power. So that the demanded DC......-link capacitor capacitance can be decreased. However, few research is about the effect of DC side and AC side decoupling on the DC-link capacitor reliability considering its electro-thermal stresses. This paper presents a quantitative analysis on the lifetime of capacitors with power decoupling circuits...... at the DC side and AC side, respectively. The ripple current spectrum of the capacitors is obtained by double Fourier analysis of a H-bridge inverter with natural sampling PWM modulation. A study case is demonstrated by a 2,000 W H-bridge inverter with 400 V DC-link voltage....

  9. The effect of consuming oxidized oil supplemented with fiber on lipid profiles in rat model

    Directory of Open Access Journals (Sweden)

    Shila Shafaeizadeh

    2011-01-01

    Conclusions: Pectin consumption could decrease serum malondialdehyde and cholesterol in the diet that contains oxidized oil. Pectin supplementation could decrease the detrimental effects of thermally oxidized oil.

  10. Studying DAC capacitor-array degradation in charge-redistribution SAR ADCs

    NARCIS (Netherlands)

    Khan, M.A.; Kerkhoff, Hans G.

    2014-01-01

    In this paper, system-level behavioural models are used to simulate the aging-related degradation effects in the DAC capacitor array of a charge-redistribution successive approximation register (SAR) ADC because of the large calculation time of transistor-level aging simulators. A

  11. Converter Power Density Increase using Low Inductive Integrated DC-link Capacitor/Bus

    DEFF Research Database (Denmark)

    Trintis, Ionut; Franke, Toke; Rannested, Bjørn

    2015-01-01

    The power losses in switching devices have a direct effect on the maximum converter power. For a voltage source converter, the DC-link bus has a major influence on the power loss and safe operating area of the power devices. The Power Ring Film CapacitorTM integrated with an optimized bus structu...

  12. An Active Damping Technique for Small DC-Link Capacitor Based Drive System

    DEFF Research Database (Denmark)

    Maheshwari, Ram Krishan; Munk-Nielsen, Stig; Lu, Kaiyuan

    2013-01-01

    A small dc-link capacitor based drive system shows instability when it is operated with large input line inductance at operating points with high power. This paper presents a simple, new active damping technique that can stabilize effectively the drive system at unstable operating points, offering...

  13. Harmonic Resonance in Power Transmission Systems due to the Addition of Shunt Capacitors

    Science.gov (United States)

    Patil, Hardik U.

    Shunt capacitors are often added in transmission networks at suitable locations to improve the voltage profile. In this thesis, the transmission system in Arizona is considered as a test bed. Many shunt capacitors already exist in the Arizona transmission system and more are planned to be added. Addition of these shunt capacitors may create resonance conditions in response to harmonic voltages and currents. Such resonance, if it occurs, may create problematic issues in the system. It is main objective of this thesis to identify potential problematic effects that could occur after placing new shunt capacitors at selected buses in the Arizona network. Part of the objective is to create a systematic plan for avoidance of resonance issues. For this study, a method of capacitance scan is proposed. The bus admittance matrix is used as a model of the networked transmission system. The calculations on the admittance matrix were done using Matlab. The test bed is the actual transmission system in Arizona; however, for proprietary reasons, bus names are masked in the thesis copy intended for the public domain. The admittance matrix was obtained from data using the PowerWorld Simulator after equivalencing the 2016 summer peak load (planning case). The full Western Electricity Coordinating Council (WECC) system data were used. The equivalencing procedure retains only the Arizona portion of the WECC. The capacitor scan results for single capacitor placement and multiple capacitor placement cases are presented. Problematic cases are identified in the form of 'forbidden response. The harmonic voltage impact of known sources of harmonics, mainly large scale HVDC sources, is also presented. Specific key results for the study indicated include: (1) The forbidden zones obtained as per the IEEE 519 standard indicates the bus 10 to be the most problematic bus. (2) The forbidden zones also indicate that switching values for the switched shunt capacitor (if used) at bus 3 should be

  14. Effect of antioxidant on biodiesel properties under accelerated oxidation

    Energy Technology Data Exchange (ETDEWEB)

    Silva, Adriano Sant' ana; Carvalho, Maria Wilma N.C.; Silva, Flavio Luiz Honorato da; Lima, Ezenildo Emanuel de [Universidade Federal de Campina Grande (CCT/UFCG), PB (Brazil). Centro de Ciencia e Tecnologia; Silva, Everson de Lima [Universidade Estadual de Campinas (FEAGRI/UNICAMP), SP (Brazil). Fac. de Engenharia Agricola; Dantas, Hermeval Jales [Universidade Federal de Campina Grande (CTRN/UFCG), PB (Brazil). Centro de Tecnologia e Recursos Naturais

    2008-07-01

    This work aimed to study the effect of antioxidant tert-butyl hydroquinone (TBHQ) on oxidative stability of biodiesel. The effect of antioxidant was analyzed under aspects such as acid value, specific gravity, dynamic viscosity and FTIR spectroscopy. According to the results, the degraded samples treated with antioxidant presented the lowest values for acid value, specific mass and dynamic viscosity. FTIR spectra showed that the degraded samples treated with antioxidant have increased their oxidative stability, while those without antioxidant had an increase in the stretch band of hydroxyl (OH). (author)

  15. Applications of Silver Nanowires on Transparent Conducting Film and Electrode of Electrochemical Capacitor

    Directory of Open Access Journals (Sweden)

    Yuan-Jun Song

    2014-01-01

    Full Text Available Silver nanowire has potential applications on transparent conducting film and electrode of electrochemical capacitor due to its excellent conductivity. Transparent conducting film (G-film was prepared by coating silver nanowires on glass substrate using Meyer rod method, which exhibited better performance than carbon nanotube and graphene. The conductivity of G-film can be improved by increasing sintering temperature. Electrode of electrochemical capacitor (I-film was fabricated through the same method with G-film on indium tin oxide (ITO. CV curves of I-film under different scanning rates had obvious redox peaks, which indicated that I-film exhibited excellent electrochemical pseudocapacitance performance and good reversibility during charge/discharge process. In addition, the specific capacitance of I-film was measured by galvanostatic charge/discharge experiments, indicating that I-film exhibits high special capacitance and excellent electrochemical stability.

  16. Toxicological effects of graphene oxide on adult zebrafish (Danio rerio)

    Energy Technology Data Exchange (ETDEWEB)

    Souza, Jaqueline P., E-mail: souza.jaqueline@gmail.com; Baretta, Jéssica F.; Santos, Fabrício; Paino, Ieda M.M.; Zucolotto, Valtencir

    2017-05-15

    Highlights: • Graphene oxide exposure caused apoptotic and necrotic stages in zebrafish gill cells. • Graphene oxide induced reactive oxygen generation in zebrafish gill cells. • Gill and liver tissues suffered injuries after graphene oxide chronic exposure. • Zebrafish blood cells did not present DNA damages after graphene oxide exposure. - Abstract: Graphene exhibits unique physical and chemical properties that facilitate its application in many fields, including electronics and biomedical areas. However, the use of graphene and its derivatives could result in accumulation in aquatic environments, and the risks posed by these compounds for organisms are not completely understood. In this study, we investigated the effects of graphene oxide (GO) on adult zebrafish (Danio rerio). Experimental fish were exposed to 2, 10 or 20 mg L{sup −1} GO, and the cytotoxicity, genotoxicity and oxidative stress were assessed. The morphology of the gills and liver tissues was also analyzed. Graphene oxide exposure led to an increase in the number of gill cells that were in early apoptotic and necrotic stages, but genotoxicity was not observed in blood cells. We also observed the generation of Reactive Oxygen Species (ROS) in gill cells. Structural analysis revealed injuries to gill tissues, including a dilated marginal channel, lamellar fusion, clubbed tips, swollen mucocytes, epithelial lifting, aneurysms, and necrosis. Liver tissues also presented lesions such as peripherally located nuclei. Furthermore, hepatocytes exhibited a non-uniform shape, picnotic nuclei, vacuole formation, cell rupture, and necrosis. Our results showed that sub-lethal doses of graphene oxide could be harmful to fish species and thus represent risks for the aquatic food chain.

  17. Accelerated Aging Experiments for Capacitor Health Monitoring and Prognostics

    Data.gov (United States)

    National Aeronautics and Space Administration — This paper discusses experimental setups for health monitoring and prognostics of electrolytic capacitors under nominal operation and accelerated aging conditions....

  18. Aging Methodologies and Prognostic Health Management for Electrolytic Capacitors

    Data.gov (United States)

    National Aeronautics and Space Administration — Understanding the ageing mechanisms of electronic components critical avionics systems such as the GPS and INAV are of critical importance. Electrolytic capacitors...

  19. Rough Electrode Creates Excess Capacitance in Thin-Film Capacitors.

    Science.gov (United States)

    Torabi, Solmaz; Cherry, Megan; Duijnstee, Elisabeth A; Le Corre, Vincent M; Qiu, Li; Hummelen, Jan C; Palasantzas, George; Koster, L Jan Anton

    2017-08-16

    The parallel-plate capacitor equation is widely used in contemporary material research for nanoscale applications and nanoelectronics. To apply this equation, flat and smooth electrodes are assumed for a capacitor. This essential assumption is often violated for thin-film capacitors because the formation of nanoscale roughness at the electrode interface is very probable for thin films grown via common deposition methods. In this work, we experimentally and theoretically show that the electrical capacitance of thin-film capacitors with realistic interface roughness is significantly larger than the value predicted by the parallel-plate capacitor equation. The degree of the deviation depends on the strength of the roughness, which is described by three roughness parameters for a self-affine fractal surface. By applying an extended parallel-plate capacitor equation that includes the roughness parameters of the electrode, we are able to calculate the excess capacitance of the electrode with weak roughness. Moreover, we introduce the roughness parameter limits for which the simple parallel-plate capacitor equation is sufficiently accurate for capacitors with one rough electrode. Our results imply that the interface roughness beyond the proposed limits cannot be dismissed unless the independence of the capacitance from the interface roughness is experimentally demonstrated. The practical protocols suggested in our work for the reliable use of the parallel-plate capacitor equation can be applied as general guidelines in various fields of interest.

  20. Preparation of activated carbon aerogel and its application to electrode material for electric double layer capacitor in organic electrolyte: Effect of activation temperature

    Energy Technology Data Exchange (ETDEWEB)

    Kwon, Soon Hyung; Lee, Eunji; Kim, Myung-Soo; Jung, Ji Chul [Myongji University, Yongin (Korea, Republic of); Kim, Bum-Soo; Kim, Sang-Gil; Lee, Byung-Jun [Vitzrocell Co., Yesan (Korea, Republic of)

    2015-02-15

    Carbon aerogel was chemically activated with KOH at various activation temperatures with the aim of improving the electrochemical performance of carbon aerogel for EDLC electrode. Electrochemical performance of activated carbon aerogel electrode was determined by cyclic voltammetry and galvanostatic charge/discharge methods using coin-type EDLC cell in organic electrolyte. Activation temperature played an important role in determining the electrochemical performance of activated carbon aerogel for EDLC electrode. Specific capacitance of activated carbon aerogel at a high current density (5 A/g) showed a volcano-shaped curve with respect to activation temperature. Excessively high activation temperature could have an adverse effect on the electrochemical properties of activated carbon aerogel due to the low electrical conductivity caused by a collapse of characteristic structure of carbon aerogel. Among the carbon samples, carbon aerogel activated at 800 .deg. C with a high surface area and a well-developed porous structure exhibited the highest specific capacitance. In addition, carbon aerogel activated at 800 .deg. C retained a considerable specific capacitance at a high current density even after 1000 cycles of charge/discharge. Therefore, it is concluded that carbon aerogel activated with KOH at 800 .deg. C can serve as an efficient electrode material for commercial EDLC with a high power density.

  1. Effects of sulfur dioxide and nitric oxide on mercury oxidation and reduction under homogeneous conditions

    Energy Technology Data Exchange (ETDEWEB)

    Yongxin Zhao; Michael D. Mann; Edwin S. Olson; John H. Pavlish; Grant E. Dunham [University of North Dakota, Grand Forks, ND (United States). Department of Chemical Engineering

    2006-05-15

    This paper is particularly related to elemental mercury (Hg{sup 0}) oxidation and divalent mercury (Hg{sup 2+} reduction under simulated flue gas conditions in the presence of nitric oxide (NO) and sulfur dioxide (SO{sub 2}). As a powerful oxidant and chlorinating reagent, Cl{sub 2} has the potential for Hg oxidation. However, the detailed mechanism for the interactions, especially among chlorine (Cl)-containing species, SO{sub 2}, NO, as well as H{sub 2}O, remains ambiguous. Research described in this paper therefore focused on the impacts of SO{sub 2} and NO on Hg{sup 0} oxidation and Hg{sup 2+} reduction with the intent of unraveling unrecognized interactions among Cl species, SO{sub 2}, and NO most importantly in the presence of H{sub 2}O. The experimental results demonstrated that SO{sub 2} and NO had pronounced inhibitory effects on Hg{sup 0} oxidation at high temperatures when H{sub 2}O was also present in the gas blend. Such a demonstration was further confirmed by the reduction of Hg{sup 2+} back into its elemental form. Data revealed that SO{sub 2} and NO were capable of promoting homogeneous reduction of Hg{sup 2+} to Hg{sup 0} with H{sub 2}O being present. However, the above inhibition or promotion disappeared under homogeneous conditions when H{sub 2}O was removed from the gas blend. 23 refs., 8 figs.

  2. Information processing through a bio-based redox capacitor: signatures for redox-cycling.

    Science.gov (United States)

    Liu, Yi; Kim, Eunkyoung; White, Ian M; Bentley, William E; Payne, Gregory F

    2014-08-01

    Redox-cycling compounds can significantly impact biological systems and can be responsible for activities that range from pathogen virulence and contaminant toxicities, to therapeutic drug mechanisms. Current methods to identify redox-cycling activities rely on the generation of reactive oxygen species (ROS), and employ enzymatic or chemical methods to detect ROS. Here, we couple the speed and sensitivity of electrochemistry with the molecular-electronic properties of a bio-based redox-capacitor to generate signatures of redox-cycling. The redox capacitor film is electrochemically-fabricated at the electrode surface and is composed of a polysaccharide hydrogel with grafted catechol moieties. This capacitor film is redox-active but non-conducting and can engage diffusible compounds in either oxidative or reductive redox-cycling. Using standard electrochemical mediators ferrocene dimethanol (Fc) and Ru(NH3)6Cl3 (Ru(3+)) as model redox-cyclers, we observed signal amplifications and rectifications that serve as signatures of redox-cycling. Three bio-relevant compounds were then probed for these signatures: (i) ascorbate, a redox-active compound that does not redox-cycle; (ii) pyocyanin, a virulence factor well-known for its reductive redox-cycling; and (iii) acetaminophen, an analgesic that oxidatively redox-cycles but also undergoes conjugation reactions. These studies demonstrate that the redox-capacitor can enlist the capabilities of electrochemistry to generate rapid and sensitive signatures of biologically-relevant chemical activities (i.e., redox-cycling). Published by Elsevier B.V.

  3. Effective Hamiltonian for high Tc Cu oxides

    International Nuclear Information System (INIS)

    Fukuyama, H.; Matsukawa, H.

    1989-01-01

    Effective Hamiltonian has been derived for CuO 2 layers in the presence of extra holes doped mainly into O-sites by taking both on-site and intersite Coulomb interaction into account. A special case with a single hole has been examined in detail. It is found that there exist various types of bound states, singlet and triplet with different spatial symmetry, below the hole bank continuum. The spatial extent of the Zhang-Rice singlet state, which is most stabilized, and the effective transfer integral between these singlet states are seen to be very sensitive to the relative magnitude of the direct and the indirect transfer integrals between O-sites. Effective Hamiltonian for the case of electron doping has also been derived

  4. Charge Fluctuations in Nanoscale Capacitors

    NARCIS (Netherlands)

    Limmer, D.T.; Merlet, C.; Salanne, M.; Chandler, D.; Madden, P.A.; van Roij, R.H.H.G.; Rotenberg, B.

    2013-01-01

    The fluctuations of the charge on an electrode contain information on the microscopic correlations within the adjacent fluid and their effect on the electronic properties of the interface. We investigate these fluctuations using molecular dynamics simulations in a constant-potential ensemble with

  5. Effect of catalysts on heterogeneous oxidation of coal

    Energy Technology Data Exchange (ETDEWEB)

    Glazkova, A P; Kazarova, Yu A; Suslov, A V

    1978-01-01

    Analyzes the effects of catalysts on the heterogeneous oxidation of coal in deflagration processes of stoichiometric mixtures. The following substances are studied as catalysts: alkali and alkaline-earth metals, and compounds of copper, lead, chromium, iron, and sulfur. In the first case the catalysts are used in the form of nitrates and the nitrate simultaneously plays the role of an oxidizer. In the second case the catalysts are added to stoichiometric mixtures of ammonium nitrate with carbon. It is shown that during carbon oxidation by nitrates the catalytic efficiency of the metals studied forms the following order: sodium > lead > potassium > barium > aluminium > calcium > magnesium > copper. The calculated and experimental parameters of combustion are given. The problem of dependence of combustion rate on combustion heat, the mechanism of the combustion reaction and the catalytic effects of the additives are discussed. Features of heterogeneous catalysis in the oxidation process of carbon by various oxidizers are analyzed. The investigations on the combustion process are important as the process takes place during explosion of coal dust in underground coal mines and during burning of coal in industrial furnaces. (34 refs.) (In Russian)

  6. Protective Effect against Oxidative Stress in Medicinal Plant Extracts

    International Nuclear Information System (INIS)

    Kim, Jeong Hee; Lee, Eun Ju; Shin, Dong O; Hong, Sung Eun; Kim, Jin Kyu

    2000-01-01

    Protective effect of medicinal plant extracts against oxidative stress were screened in this study. Methanol extracts from 48 medicinal plants, which were reported to have antioxidative or anti-inflammatory effect were prepared and screened for their protective activity against chemically-induced and radiation-induced oxidative stress by using MTT assay. Thirty three samples showed protective activity against chemically-induced oxidative stress in various extent. Among those samples, extract of Glycyrrhiza uralensis revealed the strongest activity (25.9% at 100 μg/ml) with relatively lower cytotoxicity. Seven other samples showed higher than 20% protection at 100 μg/ml. These samples were tested for protection activity against radiation-induced oxidative stress. Methanol extract of Alpina officinarum showed the highest activity (17.8% at 20 μg/ml). Five fractions were prepared from the each 10 methanol extracts which showed high protective activity against oxidative stress. Among those fraction samples butanol fractions of Areca catechu var. dulcissima and Spirodela polyrrhiza showed the highest protective activities (78.8% and 77.2%, respectively, at 20 μg/ml)

  7. An Auger electron spectroscopy study on the anodization process of high-quality thin-film capacitors made of hafnium

    International Nuclear Information System (INIS)

    Noya, Atsushi; Sasaki, Katsutaka; Umezawa, Toshiji

    1989-01-01

    Formation process of the anodic oxide film of hafnium for use as a thin-film capacitor has been examined by the current-voltage characteristics of the anodization and the in-depth analysis of formed oxide using Auger electron spectroscopy. It is found that the oxide growth obeys three different rate laws such as the linear rate law at first and next the parabolic rate law during the constant current anodization, and then the reciprocal logarithmic rate law during the constant voltage anodization following after the constant current process. From the Auger electron spectroscopy analysis, it is found that the shape of the compositional depth profile of the grown oxide film varies associating with the rate law of oxidation obeyed. The variation of depth profile correlating with the rate law is discussed with respect to each elementary process such as the transport and/or the reaction of chemical species interpreted from the over-all behavior of anodization process. It is revealed that the stoichiometric film having an interface with sharp transition, which is favorable for obtaining excellent electrical properties of the capacitor, can be obtained under the condition that the phase-boundary reaction is the rate-determining step of the anodization. The constant voltage anodization process also satisfies such circumstances and therefore can be favorable method for preparing highquality thin-film capacitors. (author)

  8. Influence of test capacitor features on piezoelectric and dielectric measurement of ferroelectric films.

    Science.gov (United States)

    Wang, Zhihong; Lau, Gih Keong; Zhu, Weiguang; Chao, Chen

    2006-01-01

    This paper presents both theoretical and numerical analyses of the piezoelectric and dielectric responses of a highly idealized film-on-substrate system, namely, a polarized ferroelectric film perfectly bonded to an elastic silicon substrate. It shows that both effective dielectric and piezoelectric properties of the films change with the size and configuration of the test capacitor. There exists a critical electrode size that is smaller than the diameter of the commonly used substrate. The effective film properties converge to their respective constrained values as capacitor size increases to the critical size. If capacitor size is smaller than the critical size, the surface displacement at the top electrode deviates from the net thickness change in response to an applied voltage because the film is deformable at the film/substrate interface. The constrained properties of the films depend only on those of bulk ferroelectrics but are independent of film thickness and substrate properties. The finding of the critical capacitor size together with analytical expressions of the constrained properties makes it possible to realize consistent measurement of piezoelectric and dielectric properties of films. A surface scanning technique is recommended to measure the profile of piezoresponses of the film so that the constrained properties of the film can be identified accurately.

  9. Effect of antimony oxide on magnesium vanadates for the selective oxidation of hydrogen sulfide to sulfur

    Energy Technology Data Exchange (ETDEWEB)

    Li, K.T.; Chi, Z.H. [Department of Chemical Engineering, Tunghai University, ROC Taichung (Taiwan)

    2001-05-17

    The effect of antimony oxide addition to MgV{sub 2}O{sub 6} and Mg{sub 3}V{sub 2}O{sub 8} was studied in the selective oxidation of hydrogen sulfide to sulfur. Significant improvements in sulfur selectivity and yield were observed for the uncalcined mechanical mixtures of magnesium vanadates with {alpha}-Sb{sub 2}O{sub 4}. Calcination of the mechanical mixtures resulted in the much stronger synergy in catalytic activity and sulfur selectivity. For the uncalcined samples, XRD, TPR and XPS studies indicated that antimony reduction behaviors in the mechanical mixtures differed very much from those in {alpha}-Sb{sub 2}O{sub 4} alone, suggested that their selectivity improvements might be due to the interactions (probably oxygen transfer) between {alpha}-Sb{sub 2}O{sub 4} and magnesium vanadates. For the calcined samples, XRD results indicated that their better catalytic performances in H{sub 2}S oxidation were primarily attributed to the formation of VSbO{sub 4} compound from antimony oxide and magnesium vanadates.

  10. Effect of moxifloxacin on oxidative stress, paraoxonase-1 (PON1 ...

    African Journals Online (AJOL)

    Purpose: To investigate the effect of moxifloxacin on paraoxonase-1 (PON1) activity, and serum oxidative stress in patients with multiple drug-resistant tuberculosis (MDR-TB). Methods: A total ofof 130 MDR-TB patients who were treated with moxifloxacin from October 2014 to October 2010 in Eastern Medical District of Linyi ...

  11. Anti-Oxidant effects of pomegranate juice on Saccharomyces ...

    African Journals Online (AJOL)

    Conclusion: Pomegranate juice has a positive effect on fatty acid, vitamin and protein synthesis by Saccharomyces cerevisiae. Accordingly, we believe that it has significantly decreased oxidative damage thereby making a positive impact on yeast development. Key words: Pomegranate juice, SDS-PAGE, fatty acid, vitamin.

  12. Effect of ascorbic and folic acids supplementation on oxidative ...

    African Journals Online (AJOL)

    An experiment was conducted on the effect of supplementation of ascorbic and folic acids on the oxidative hormones, enzymatic antioxidants, haematological and biochemical properties of layers exposed to increased heat load. A total of 72 Isa Brown laying hens at 31 weeks of age were randomly divided into four groups ...

  13. In vitro potential cytogenetic and oxidative stress effects of roxithromycin.

    Science.gov (United States)

    Arslan, Mehmet; Timocin, Taygun; Ila, Hasan B

    2017-10-01

    Macrolide antibiotic roxithromycin was evaluated in terms of its genotoxic, cytotoxic and oxidative stress effects. For this purpose; 25, 50, 100 and 200 μg/mL concentrations of roxithromycin were dissolved in dimethyl sulfoxide and treated to human peripheral blood lymphocytes for two different treatment periods (24 and 48 h). In chromosome aberration (CA) and micronucleus (MN) tests, roxithromycin did not show genotoxic effect. But it induced sister chromatid exchange (SCE) at the highest concentration (200 μg/mL) for the 24-h treatment period and at all concentrations (except 25 μg/mL) for the 48-h treatment period. Looking at cytotoxic effect of roxithromycin, statistically insignificant decreases on mitotic index and proliferation index were observed. Roxithromycin decreased nuclear division index (NDI) at highest two concentrations (100 and 200 μg/mL) for the 24-h treatment period and at all concentrations (expect 25 μg/mL) for the 48-h treatment period. Total oxidant values, total antioxidant values and oxidative stress index did not change with roxithromycin treatment. Eventually, roxithromycin did not have genotoxic and oxidative stress effects in human-cultured lymphocytes.

  14. Effect of nickel oxide substitution on bioactivity and mechanical ...

    Indian Academy of Sciences (India)

    In the present work, the effect of addition of nickel oxide that annualizes the .... for required dimension using grinding machine, then sam- ples were subjected to ... the hardness testing machine, the size of the sample was. 10 × 10 × 10 mm ...

  15. Alleviating effect of exogenous nitric oxide in cucumber seedling ...

    African Journals Online (AJOL)

    Administrator

    2011-05-23

    May 23, 2011 ... oxidation (Shi et al., 2007). To protect cells and organelles from the damaging effects of ROS, complex antioxidant defense system have been evolved which comprises of enzymes such as superoxide dismutase (SOD), catalase. (CAT), peroxidase (POD) and glutathione reeducate (GR). (Lee et al., 2000; ...

  16. Effects of Mixed Alkaline Earth Oxides in Potash Silicate Glass ...

    African Journals Online (AJOL)

    The aim of this work is to investigate the effects of mixed alkaline earth oxide in potash silicate glasses with regards to their physical properties. More recently; there has been an increase in the demand for light weight glasses which retains their physical and chemical properties for both domestic and industrial applications.

  17. Ceramic capacitor exhibiting graceful failure by self-clearing, method for fabricating self-clearing capacitor

    Science.gov (United States)

    Kaufman, David Y [Chicago, IL; Saha, Sanjib [Santa Clara, CA

    2006-08-29

    A short-resistant capacitor comprises an electrically conductive planar support substrate having a first thickness, a ceramic film deposited over the support substrate, thereby defining a ceramic surface; and a metallic film deposited over the ceramic surface, said film having a second thickness which is less than the first thickness and which is between 0.01 and 0.1 microns.

  18. Dielectric material in lead-based perovskite and fabrication process for multilayer ceramic capacitor with copper internal electrode

    International Nuclear Information System (INIS)

    Kato, J.; Yokotani, Y.; Kagata, H.; Nakatani, S.; Kugimiya, K.

    1990-01-01

    This paper reports on the development of a multilayer ceramic capacitor with copper internal electrodes. Dielectric materials of the capacitor is lead- based perovskite (Pb a Ca b ) (Mg 1/3 Nb 2/3 ) x Ti y (Ni 1/2 W 1/2 ) z O 2 + a + b where a + b gt 1 and x + y + z = 1. The materials can be fired below 1000 degrees C and have high resistivity even when fired in the atmosphere below the equilibrium oxygen partial pressure of copper and CuO. The fabrication process of the capacitor has following features. The electrode paste is composed of copper oxide to prevent breaking of the laminated body in a burn out process. Then the copper oxide is first metalized and fired in a controlled atmosphere. The obtained capacitor of 20 dielectric layers of 17 micron meter meets to Z5U specification and has low loss tangent of 0.6% and stability under d.c. bias voltage and high a.c. field

  19. Pseudocapacitance effects for enhancement of capacitor performance

    Energy Technology Data Exchange (ETDEWEB)

    Lota, G.; Frackowiak, E. [Poznan University of Technology, Institute of Chemistry and Technical Electrochemistry, 60-965 Poznan, Piotrowo 3 (Poland)

    2010-10-15

    We report on the pseudo-capacitance induced by a nitrogen substituted in the carbon network composite prepared by a simple carbonisation (750 C) of formaldehyde and melamine in the presence of carbon nanotubes. Nitrogen content in the composites varied from 7.4 to 21.7 wt.%. Such materials have a higher density than activated carbons, hence, they can supply better volumetric capacity. N-rich composites show an excellent charge propagation at current loads from 500 mA g{sup -1} to 50 A g{sup -1} because of multiwalled nanotubes which play a conducting as well as a supporting role. The electrochemical performance of various composites was investigated in two- and three-electrode cells using acidic (1 mol L{sup -1} H{sub 2}SO{sub 4}), alkaline (6 mol L{sup -1}KOH), neutral (1 mol L{sup -1} Na{sub 2}SO{sub 4}) and organic electrolytes (1 mol L{sup -1} TEABF{sub 4} in acetonitrile). Organic and neutral medium is not adapted for N-rich carbon electrodes of supercapacitor. The detailed electrochemical characterisation pointed out the differences of charge propagation of electrodes with the different polarity. (Abstract Copyright [2010], Wiley Periodicals, Inc.)

  20. Determination of an Effective Perfluorinated Compounds (PFCs) Oxidation Method

    Science.gov (United States)

    Siriwardena, D. P.; Crimi, M.; Holsen, T.; Bellona, C.

    2014-12-01

    Perfluoroalkyl and polyfluoroalkyl substances (PFASs) are a stable synthetic class of chemicals ubiquitously spread in environmental media (i.e. air, soil, biota, surface water and groundwater). The substances' strong polar carbon-fluorine bonds and their high thermal and chemical stability make them resistant to biological, chemical, and physical degradation. The purpose of this research is to identify the most effective oxidation method to treat perfluorinated compounds (PFCs) and their by-products that is suitable for in situ application. The laboratory oxidation study focuses on the more commonly detected and studied long-chain (C-8) PFAS; perfluorooctanoic acids (PFOA) and perfluorooctane sulfonic acid (PFOS). Existing research evaluating oxidizing treatment effectiveness on perfluoroalkyl sulfoinoic acids (PFSAs) is limited. A review of the literature and results from preliminary studies indicate that activated persulfate and catalyzed hydrogen peroxide propagation (CHP) reactions appear to be promising oxidants for PFOA. It has been demonstrated that the reactivity of superoxide in water increases in the presence of hydrogen peroxide (H2O2) and solids. Superoxide generated in CHP reactions degrades PFOA seemingly similar to superoxide-mediated destruction of the perhalogenated compounds.The goal of this study is to look at conditions that promote generation of superoxide and look at PFASs treatment effectiveness and byproduct generation. CHP reactions are conducted with varying amount of H2O2 and Fe(III) to determine the optimum conditions for PFC degradation. Results will be compared to those of another experiment using manganese dioxide as a CHP catalyst with varied H2O2 concentration to generate superoxide to degrade PFASs. Activated persulfate conditions to be compared include alkaline pH activation, heat activation, and dual oxidation (combined H2O2 and persulfate ). This presentation will focus on a comparison of oxidation effectiveness under the