MOSFET and MOS capacitor responses to ionizing radiation

Science.gov (United States)

Benedetto, J. M.; Boesch, H. E., Jr.

1984-01-01

The ionizing radiation responses of metal oxide semiconductor (MOS) field-effect transistors (FETs) and MOS capacitors are compared. It is shown that the radiation-induced threshold voltage shift correlates closely with the shift in the MOS capacitor inversion voltage. The radiation-induced interface-state density of the MOSFETs and MOS capacitors was determined by several techniques. It is shown that the presence of 'slow' states can interfere with the interface-state measurements.

A high-performance flexible fibre-shaped electrochemical capacitor based on electrochemically reduced graphene oxide.

Science.gov (United States)

Li, Yingru; Sheng, Kaixuan; Yuan, Wenjing; Shi, Gaoquan

2013-01-11

A fibre-shaped solid electrochemical capacitor based on electrochemically reduced graphene oxide has been fabricated, exhibiting high specific capacitance and rate capability, long cycling life and attractive flexibility.

Electrochemical capacitor

Science.gov (United States)

Anderson, Marc A.; Liu, Kuo -Chuan; Mohr, Charles M.

1999-10-05

An inexpensive porous metal oxide material having high surface area, good conductivity and high specific capacitance is advantageously used in an electrochemical capacitor. The materials are formed in a sol-gel process which affords control over the properties of the resultant metal oxide materials.

The TDDB Characteristics of Ultra-Thin Gate Oxide MOS Capacitors under Constant Voltage Stress and Substrate Hot-Carrier Injection

Directory of Open Access Journals (Sweden)

Jingyu Shen

2018-01-01

Full Text Available The breakdown characteristics of ultra-thin gate oxide MOS capacitors fabricated in 65 nm CMOS technology under constant voltage stress and substrate hot-carrier injection are investigated. Compared to normal thick gate oxide, the degradation mechanism of time-dependent dielectric breakdown (TDDB of ultra-thin gate oxide is found to be different. It is found that the gate current (Ig of ultra-thin gate oxide MOS capacitor is more likely to be induced not only by Fowler-Nordheim (F-N tunneling electrons, but also by electrons surmounting barrier and penetrating electrons in the condition of constant voltage stress. Moreover it is shown that the time to breakdown (tbd under substrate hot-carrier injection is far less than that under constant voltage stress when the failure criterion is defined as a hard breakdown according to the experimental results. The TDDB mechanism of ultra-thin gate oxide will be detailed. The differences in TDDB characteristics of MOS capacitors induced by constant voltage stress and substrate hot-carrier injection will be also discussed.

An Aqueous Metal-Ion Capacitor with Oxidized Carbon Nanotubes and Metallic Zinc Electrodes

Energy Technology Data Exchange (ETDEWEB)

Tian, Yuheng; Amal, Rose; Wang, Da-Wei, E-mail: da-wei.wang@unsw.edu.au [School of Chemical Engineering, The University of New South Wales (UNSW), Sydney, NSW (Australia)

2016-10-03

An aqueous metal ion capacitor comprising of a zinc anode, oxidized carbon nanotubes (oCNTs) cathode, and a zinc sulfate electrolyte is reported. Since the shuttling cation is Zn{sup 2+}, this typical metal ion capacitor is named as zinc-ion capacitor (ZIC). The ZIC integrates the divalent zinc stripping/plating chemistry with the surface-enabled pseudocapacitive cation adsorption/desorption on oCNTs. The surface chemistry and crystallographic structure of oCNTs were extensively characterized by combining X-ray photoelectron spectroscopy, Fourier-transformed infrared spectroscopy, Raman spectroscopy, and X-ray powder diffraction. The function of the surface oxygen groups in surface cation storage was elucidated by a series of electrochemical measurement and the surface-enabled ZIC showed better performance than the ZIC with an un-oxidized CNT cathode. The reaction mechanism at the oCNT cathode involves the additional reversible Faradaic process, while the CNTs merely show electric double layer capacitive behavior involving a non-Faradaic process. The aqueous hybrid ZIC comprising the oCNT cathode exhibited a specific capacitance of 20 mF cm{sup −2} (corresponding to 53 F g{sup −1}) in the range of 0–1.8 V at 10 mV s{sup −1} and a stable cycling performance up to 5000 cycles.

In situ chemical synthesis of ruthenium oxide/reduced graphene oxide nanocomposites for electrochemical capacitor applications.

Science.gov (United States)

Kim, Ji-Young; Kim, Kwang-Heon; Yoon, Seung-Beom; Kim, Hyun-Kyung; Park, Sang-Hoon; Kim, Kwang-Bum

2013-08-07

An in situ chemical synthesis approach has been developed to prepare ruthenium oxide/reduced graphene oxide (RGO) nanocomposites. It is found that as the C/O ratio increases, the number density of RuO2 nanoparticles decreases, because the chemical interaction between the Ru ions and the oxygen-containing functional groups provides anchoring sites where the nucleation of particles takes place. For electrochemical capacitor applications, the microwave-hydrothermal process was carried out to improve the conductivity of RGO in RuO2/RGO nanocomposites. The significant improvement in capacitance and high rate capability might result from the RuO2 nanoparticles used as spacers that make the interior layers of the reduced graphene oxide electrode available for electrolyte access.

Numerical Simulation of Tunneling Current in an Anisotropic Metal-Oxide-Semiconductor Capacitor

Directory of Open Access Journals (Sweden)

Khairurrijal khairurrijal

2012-09-01

Full Text Available In this paper, we have developed a model of the tunneling currents through a high-k dielectric stack in MOS capacitors with anisotropic masses. The transmittance was numerically calculated by employing a transfer matrix method and including longitudinal-transverse kinetic energy coupling which is represented by an electron phase velocity in the gate. The transmittance was then applied to calculate tunneling currents in TiN/HfSiOxN/SiO2/p-Si MOS capacitors. The calculated results show that as the gate electron velocity increases, the transmittance decreases and therefore the tunneling current reduces. The tunneling current becomes lower as the effective oxide thickness (EOT of HfSiOxN layer increases. When the incident electron passed through the barriers in the normal incident to the interface, the electron tunneling process becomes easier. It was also shown that the tunneling current was independent of the substrate orientation. Moreover, the model could be used in designing high speed MOS devices with low tunneling currents.

High-performance symmetric electrochemical capacitor based on graphene foam and nanostructured manganese oxide

CSIR Research Space (South Africa)

Bello, A

2013-01-01

Full Text Available We have fabricated a symmetric electrochemical capacitor with high energy and power densities based on a composite of graphene foam (GF) with 80 wt% of manganese oxide (MnO(sub2)) deposited by hydrothermal synthesis. Raman spectroscopy and X...

Thermally Reduced Graphene Oxide Electrochemically Activated by Bis-Spiro Quaternary Alkyl Ammonium for Capacitors.

Science.gov (United States)

He, Tieshi; Meng, Xiangling; Nie, Junping; Tong, Yujin; Cai, Kedi

2016-06-08

Thermally reduced graphene oxide (RGO) electrochemically activated by a quaternary alkyl ammonium-based organic electrolytes/activated carbon (AC) electrode asymmetric capacitor is proposed. The electrochemical activation process includes adsorption of anions into the pores of AC in the positive electrode and the interlayer intercalation of cations into RGO in the negative electrode under high potential (4.0 V). The EA process of RGO by quaternary alkyl ammonium was investigated by X-ray diffraction and electrochemical measurements, and the effects of cation size and structure were extensively evaluated. Intercalation by quaternary alkyl ammonium demonstrates a small degree of expansion of the whole crystal lattice (d002) and a large degree of expansion of the partial crystal lattice (d002) of RGO. RGO electrochemically activated by bis-spiro quaternary alkyl ammonium in propylene carbonate/AC asymmetric capacitor exhibits good activated efficiency, high specific capacity, and stable cyclability.

Modified and improved Hummer's synthesis of graphene oxide for capacitors applications

Directory of Open Access Journals (Sweden)

M. Sohail

2017-09-01

Full Text Available In the present study, we explored whether different characteristics of graphene oxide prepared via two different routes have been modified. It was observed that samples obtained via both routes have nearly the same physico-chemical characteristics. Spectral (FT-IR and UV-vis studies showed the synthesis and optical properties of the materials respectively. Optical band gap (Eg was found to be in the range of 3.1–3.9 eV. Thermal studies demonstrated that the prepared materials exhibited stability up to 550 °C. X-ray diffraction evaluated the semi-crystalline nature of the materials with crystallite size in the range from 27–28 nm. Dielectric study showed that the materials are active at low frequency range due to interfacial polarization while at higher frequency the dipoles present in the materials show relaxation behavior. The lowest value of dielectric tan. loss (0.03–0.39 acquired by both the samples is of immense importance for capacitors. Based on the observations, graphene oxide prepared is suggested to be used a possible material in thermally stable capacitors and in composite materials.

Charge separation technique for metal-oxide-silicon capacitors in the presence of hydrogen deactivated dopants

International Nuclear Information System (INIS)

Witczak, Steven C.; Winokur, Peter S.; Lacoe, Ronald C.; Mayer, Donald C.

2000-01-01

An improved charge separation technique for metal-oxide-silicon (MOS) capacitors is presented which accounts for the deactivation of substrate dopants by hydrogen at elevated irradiation temperatures or small irradiation biases. Using high-frequency capacitance-voltage (C-V) measurements, radiation-induced inversion voltage shifts are separated into components due to oxide trapped charge, interface traps and deactivated dopants, where the latter is computed from a reduction in Si capacitance. In the limit of no radiation-induced dopant deactivation, this approach reduces to the standard midgap charge separation technique used widely for the analysis of room-temperature irradiations. The technique is demonstrated on a p-type MOS capacitor irradiated with 60 Co γ-rays at 100 C and zero bias, where the dopant deactivation is significant

Ferroelectric capacitor with reduced imprint

Science.gov (United States)

Evans, Jr., Joseph T.; Warren, William L.; Tuttle, Bruce A.; Dimos, Duane B.; Pike, Gordon E.

1997-01-01

An improved ferroelectric capacitor exhibiting reduced imprint effects in comparison to prior art capacitors. A capacitor according to the present invention includes top and bottom electrodes and a ferroelectric layer sandwiched between the top and bottom electrodes, the ferroelectric layer comprising a perovskite structure of the chemical composition ABO.sub.3 wherein the B-site comprises first and second elements and a dopant element that has an oxidation state greater than +4. The concentration of the dopant is sufficient to reduce shifts in the coercive voltage of the capacitor with time. In the preferred embodiment of the present invention, the ferroelectric element comprises Pb in the A-site, and the first and second elements are Zr and Ti, respectively. The preferred dopant is chosen from the group consisting of Niobium, Tantalum, and Tungsten. In the preferred embodiment of the present invention, the dopant occupies between 1 and 8% of the B-sites.

Thickness dependence of the switching voltage in all-oxide ferroelectric thin-film capacitors prepared by pulsed laser deposition

NARCIS (Netherlands)

Cillessen, J.F.M.; Prins, M.W.J.; Wolf, R.M.

1997-01-01

Thin-film ferroelectric capacitors consisting of PbZr0.53Ti0.47O3 sandwiched between La0.5Sr0.5CoO3 electrodes have been deposited using pulsed laser deposition. The combination of oxidic perovskite-type materials results in capacitors with a coercive field (Ec) which is comparable with values for

Capacitance-voltage characterization of fully silicided gated MOS capacitor

International Nuclear Information System (INIS)

Wang Baomin; Ru Guoping; Jiang Yulong; Qu Xinping; Li Bingzong; Liu Ran

2009-01-01

This paper investigates the capacitance-voltage (C-V) measurement on fully silicided (FUSI) gated metal-oxide-semiconductor (MOS) capacitors and the applicability of MOS capacitor models. When the oxide leakage current of an MOS capacitor is large, two-element parallel or series model cannot be used to obtain its real C-V characteristic. A three-element model simultaneously consisting of parallel conductance and series resistance or a four-element model with further consideration of a series inductance should be used. We employed the three-element and the four-element models with the help of two-frequency technique to measure the Ni FUSI gated MOS capacitors. The results indicate that the capacitance of the MOS capacitors extracted by the three-element model still shows some frequency dispersion, while that extracted by the four-element model is close to the real capacitance, showing little frequency dispersion. The obtained capacitance can be used to calculate the dielectric thickness with quantum effect correction by NCSU C-V program. We also investigated the influence of MOS capacitor's area on the measurement accuracy. The results indicate that the decrease of capacitor area can reduce the dissipation factor and improve the measurement accuracy. As a result, the frequency dispersion of the measured capacitance is significantly reduced, and real C-V characteristic can be obtained directly by the series model. In addition, this paper investigates the quasi-static C-V measurement and the photonic high-frequency C-V measurement on Ni FUSI metal gated MOS capacitor with a thin leaky oxide. The results indicate that the large tunneling current through the gate oxide significantly perturbs the accurate measurement of the displacement current, which is essential for the quasi-static C-V measurement. On the other hand, the photonic high-frequency C-V measurement can bypass the leakage problem, and get reliable low-frequency C-V characteristic, which can be used to

Method of making dielectric capacitors with increased dielectric breakdown strength

Science.gov (United States)

Ma, Beihai; Balachandran, Uthamalingam; Liu, Shanshan

2017-05-09

The invention is directed to a process for making a dielectric ceramic film capacitor and the ceramic dielectric laminated capacitor formed therefrom, the dielectric ceramic film capacitors having increased dielectric breakdown strength. The invention increases breakdown strength by embedding a conductive oxide layer between electrode layers within the dielectric layer of the capacitors. The conductive oxide layer redistributes and dissipates charge, thus mitigating charge concentration and micro fractures formed within the dielectric by electric fields.

Ionic behavior of organic-inorganic metal halide perovskite based metal-oxide-semiconductor capacitors.

Science.gov (United States)

Wang, Yucheng; Zhang, Yuming; Pang, Tiqiang; Xu, Jie; Hu, Ziyang; Zhu, Yuejin; Tang, Xiaoyan; Luan, Suzhen; Jia, Renxu

2017-05-24

Organic-inorganic metal halide perovskites are promising semiconductors for optoelectronic applications. Despite the achievements in device performance, the electrical properties of perovskites have stagnated. Ion migration is speculated to be the main contributing factor for the many unusual electrical phenomena in perovskite-based devices. Here, to understand the intrinsic electrical behavior of perovskites, we constructed metal-oxide-semiconductor (MOS) capacitors based on perovskite films and performed capacitance-voltage (C-V) and current-voltage (I-V) measurements of the capacitors. The results provide direct evidence for the mixed ionic-electronic transport behavior within perovskite films. In the dark, there is electrical hysteresis in both the C-V and I-V curves because the mobile negative ions take part in charge transport despite frequency modulation. However, under illumination, the large amount of photoexcited free carriers screens the influence of the mobile ions with a low concentration, which is responsible for the normal C-V properties. Validation of ion migration for the gate-control ability of MOS capacitors is also helpful for the investigation of perovskite MOS transistors and other gate-control photovoltaic devices.

Materials for electrochemical capacitors

Science.gov (United States)

Simon, Patrice; Gogotsi, Yury

2008-11-01

Electrochemical capacitors, also called supercapacitors, store energy using either ion adsorption (electrochemical double layer capacitors) or fast surface redox reactions (pseudo-capacitors). They can complement or replace batteries in electrical energy storage and harvesting applications, when high power delivery or uptake is needed. A notable improvement in performance has been achieved through recent advances in understanding charge storage mechanisms and the development of advanced nanostructured materials. The discovery that ion desolvation occurs in pores smaller than the solvated ions has led to higher capacitance for electrochemical double layer capacitors using carbon electrodes with subnanometre pores, and opened the door to designing high-energy density devices using a variety of electrolytes. Combination of pseudo-capacitive nanomaterials, including oxides, nitrides and polymers, with the latest generation of nanostructured lithium electrodes has brought the energy density of electrochemical capacitors closer to that of batteries. The use of carbon nanotubes has further advanced micro-electrochemical capacitors, enabling flexible and adaptable devices to be made. Mathematical modelling and simulation will be the key to success in designing tomorrow's high-energy and high-power devices.

Matching Properties of Femtofarad and Sub-Femtofarad MOM Capacitors

KAUST Repository

Omran, Hesham

2016-04-21

Small metal-oxide-metal (MOM) capacitors are essential to energy-efficient mixed-signal integrated circuit design. However, only few reports discuss their matching properties based on large sets of measured data. In this paper, we report matching properties of femtofarad and sub-femtofarad MOM vertical-field parallel-plate capacitors and lateral-field fringing capacitors. We study the effect of both the finger-length and finger-spacing on the mismatch of lateral-field capacitors. In addition, we compare the matching properties and the area efficiency of vertical-field and lateral-field capacitors. We use direct mismatch measurement technique, and we illustrate its feasibility using experimental measurements and Monte Carlo simulations. The test-chips are fabricated in a 0.18 \\\\mutext{m} CMOS process. A large number of test structures is characterized (4800 test structures), which improves the statistical reliability of the extracted mismatch information. Despite conventional wisdom, extensive measurements show that vertical-field and lateral-field MOM capacitors have the same matching properties when the actual capacitor area is considered. Measurements show that the mismatch depends on the capacitor area but not on the spacing; thus, for a given mismatch specification, the lateral-field MOM capacitor can have arbitrarily small capacitance by increasing the spacing between the capacitor fingers, at the expense of increased chip area.

Matching Properties of Femtofarad and Sub-Femtofarad MOM Capacitors

KAUST Repository

Omran, Hesham; Alahmadi, Hamzah; Salama, Khaled N.

2016-01-01

Small metal-oxide-metal (MOM) capacitors are essential to energy-efficient mixed-signal integrated circuit design. However, only few reports discuss their matching properties based on large sets of measured data. In this paper, we report matching properties of femtofarad and sub-femtofarad MOM vertical-field parallel-plate capacitors and lateral-field fringing capacitors. We study the effect of both the finger-length and finger-spacing on the mismatch of lateral-field capacitors. In addition, we compare the matching properties and the area efficiency of vertical-field and lateral-field capacitors. We use direct mismatch measurement technique, and we illustrate its feasibility using experimental measurements and Monte Carlo simulations. The test-chips are fabricated in a 0.18 \\mutext{m} CMOS process. A large number of test structures is characterized (4800 test structures), which improves the statistical reliability of the extracted mismatch information. Despite conventional wisdom, extensive measurements show that vertical-field and lateral-field MOM capacitors have the same matching properties when the actual capacitor area is considered. Measurements show that the mismatch depends on the capacitor area but not on the spacing; thus, for a given mismatch specification, the lateral-field MOM capacitor can have arbitrarily small capacitance by increasing the spacing between the capacitor fingers, at the expense of increased chip area.

Nickel oxide/hydroxide nanoplatelets synthesized by chemical precipitation for electrochemical capacitors

International Nuclear Information System (INIS)

Wu, M.-S.; Hsieh, H.-H.

2008-01-01

Nickel hydroxide powder prepared by directly chemical precipitation method at room temperature has a nanoplatelet-like morphology and could be converted into nickel oxide at annealing temperature higher than 300 deg. C, confirmed by the thermal gravimetric analysis and X-ray diffraction. Annealing temperature influences significantly both the electrical conductivity and the specific surface area of nickel oxide/hydroxide powder, and consequently determines the capacitor behavior. Electrochemical capacitive behavior of the synthesized nickel hydroxide/oxide film is investigated by cyclic voltammetry and electrochemical impedance spectroscope methods. After 300 deg. C annealing, the highest specific capacitance of 108 F g -1 is obtained at scan rate of 10 mV s -1 . When annealing temperature is lower than 300 deg. C, the electrical conductivity of nickel hydroxide dominates primarily the capacitive behavior. When annealing temperature is higher than 300 deg. C, both electrical conductivity and specific surface area of the nickel oxide dominate the capacitive behavior

Influence of post-annealing on the electrical properties of metal/oxide/silicon nitride/oxide/silicon capacitors for flash memories

International Nuclear Information System (INIS)

Kim, Hee Dong; An, Ho-Myoung; Kim, Kyoung Chan; Seo, Yu Jeong; Kim, Tae Geun

2008-01-01

We report the effect of post-annealing on the electrical properties of metal/oxide/silicon nitride/oxide/silicon (MONOS) capacitors. Four samples, namely as-deposited and annealed at 750, 850 and 950 °C for 30 s in nitrogen ambient by a rapid thermal process, were prepared and characterized for comparison. The best performance with the largest memory window of 4.4 V and the fastest program speed of 10 ms was observed for the sample annealed at 850 °C. In addition, the highest traps density of 6.84 × 10 18 cm −3 was observed with ideal trap distributions for the same sample by capacitance–voltage (C–V) measurement. These results indicate that the memory traps in the ONO structure can be engineered by post-annealing to improve the electrical properties of the MONOS device

Nanosized Ni-Mn Oxides Prepared by the Citrate Gel Process and Performances for Electrochemical Capacitors

Institute of Scientific and Technical Information of China (English)

Jianxin ZHOU; Xiangqian SHEN; Maoxiang JING

2006-01-01

Nanosized Ni-Mn oxide powders have been successfully prepared by thermal decomposition of the Ni-Mn citrate gel precursors. The powder materials derived from calcination of the gel precursors with various molar ratios of nickel and manganese at different temperatures and time were characterized using thermal analysis (TG-DSC), scanning electron microscopy (SEM), X-ray diffraction (XRD) and Brunauer-Emmet-Teller (BET).The optimized processing conditions of calcination at 400℃ for 1 h with Ni/Mn molar ratio 6 were proved to produce the nanosized Ni-Mn oxide powders with a high specific surface area of 109.62 m2/g and nanometer particle sizes of 15～30 nm. The capacitance characteristics of the nanosized Ni-Mn oxide electrode in various concentrations of KOH solutions were studied by the cyclic voltammetry (CV) and exhibited both a doublelayer capacitance and a Faradaic capacitance which could be attributed to the electrode consisting of Ni-Mn oxides and residual carbons from the organic gel thermal decomposition. A specific capacitance of 194.8 F/g was obtained for the electrode at the sweep rate of 10 mV/s in 4 mol/L KOH electrolyte and the capacitor showed quite high cyclic stability and is promising for advanced electrochemical capacitors.

Effects of Y incorporation in TaON gate dielectric on electrical performance of GaAs metal-oxide-semiconductor capacitor

Energy Technology Data Exchange (ETDEWEB)

Liu, Li Ning; Choi, Hoi Wai; Lai, Pui To [Department of Electrical and Electronic Engineering, The University of Hong Kong (China); Xu, Jing Ping [School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan (China)

2016-09-15

In this study, GaAs metal-oxide-semiconductor (MOS) capacitors using Y-incorporated TaON as gate dielectric have been investigated. Experimental results show that the sample with a Y/(Y + Ta) atomic ratio of 27.6% exhibits the best device characteristics: high k value (22.9), low interfacestate density (9.0 x 10{sup 11} cm{sup -2} eV{sup -1}), small flatband voltage (1.05 V), small frequency dispersion and low gate leakage current (1.3 x 10{sup -5}A/cm{sup 2} at V{sub fb} + 1 V). These merits should be attributed to the complementary properties of Y{sub 2}O{sub 3} and Ta{sub 2}O{sub 5}:Y can effectively passivate the large amount of oxygen vacancies in Ta{sub 2}O{sub 5}, while the positively-charged oxygen vacancies in Ta{sub 2}O{sub 5} are capable of neutralizing the effects of the negative oxide charges in Y{sub 2}O{sub 3}. This work demonstrates that an appropriate doping of Y content in TaON gate dielectric can effectively improve the electrical performance for GaAs MOS devices. (copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Nanostructured Electrode Materials for Electrochemical Capacitor Applications.

Science.gov (United States)

Choi, Hojin; Yoon, Hyeonseok

2015-06-02

The advent of novel organic and inorganic nanomaterials in recent years, particularly nanostructured carbons, conducting polymers, and metal oxides, has enabled the fabrication of various energy devices with enhanced performance. In this paper, we review in detail different nanomaterials used in the fabrication of electrochemical capacitor electrodes and also give a brief overview of electric double-layer capacitors, pseudocapacitors, and hybrid capacitors. From a materials point of view, the latest trends in electrochemical capacitor research are also discussed through extensive analysis of the literature and by highlighting notable research examples (published mostly since 2013). Finally, a perspective on next-generation capacitor technology is also given, including the challenges that lie ahead.

Electrophoretically deposited graphene oxide and carbon nanotube composite for electrochemical capacitors

International Nuclear Information System (INIS)

Ajayi, Obafunso A; Wong, Chee Wei; Guitierrez, Daniel H; Peaslee, David; Cheng, Arthur; Chen, Bin; Gao, Theodore

2015-01-01

We report a scalable one-step electrode fabrication approach for synthesizing composite carbon-based supercapacitors with synergistic outcomes. Multi-walled carbon nanotubes (MWCNTs) were successfully integrated into our modified electrophoretic deposition process to directly form composite MWCNT–GO electrochemical capacitor electrodes (where GO is graphene oxide) with superior performance to solely GO electrodes. The measured capacitance improved threefold, reaching a maximum specific capacitance of 231 F g"−"1. Upon thermal reduction, MWCNT–GO electrode sheet resistance decreased by a factor of 8, significantly greater than the 2× decrease of those without MWCNTs. (paper)

Structures and electrochemical performances of pyrolized carbons from graphite oxides for electric double-layer capacitor

Science.gov (United States)

Kim, Ick-Jun; Yang, Sunhye; Jeon, Min-Je; Moon, Seong-In; Kim, Hyun-Soo; Lee, Yoon-Pyo; An, Kye-Hyeok; Lee, Young-Hee

The structural features and the electrochemical performances of pyrolized needle cokes from oxidized cokes are examined and compared with those of KOH-activated needle coke. The structure of needle coke is changed to a single phase of graphite oxide after oxidation treatment with an acidic solution having an NaClO 3/needle coke composition ratio of above 7.5, and the inter-layer distance of the oxidized needle coke is expanded to 6.9 Å with increasing oxygen content. After heating at 200 °C, the oxidized needle coke is reduced to a graphite structure with an inter-layer distance of 3.6 Å. By contrast, a change in the inter-layer distance in KOH-activated needle coke is not observed. An intercalation of pyrolized needle coke, observed on first charge, occurs at 1.0 V. This value is lower than that of KOH-activation needle coke. A capacitor using pyrolized needle coke exhibits a lower internal resistance of 0.57 Ω in 1 kHz, and a larger capacitance per weight and volume of 30.3 F g -1 and 26.9 F ml -1, in the two-electrode system over the potential range 0-2.5 V compared with those of a capacitor using KOH-activation of needle coke. This better electrochemical performance is attributed to a distorted graphene layer structure derived from the process of the inter-layer expansion and shrinkage.

Multilayered films of cobalt oxyhydroxide nanowires/manganese oxide nanosheets for electrochemical capacitor

Energy Technology Data Exchange (ETDEWEB)

Zheng, Huajun [State Key Laboratory Breeding Base of Green Chemistry Synthesis Technology, Zhejiang University of Technology, Hangzhou 310014 (China); ARC Centre of Excellence for Functional Nanomaterials, School of Chemical Engineering and AIBN, The University of Queensland, St Lucia, Brisbane, QLD 4072 (Australia); Tang, Fengqiu; Mukherji, Aniruddh; Yan, Xiaoxia; Wang, Lianzhou (Max) Lu, Gao Qing [ARC Centre of Excellence for Functional Nanomaterials, School of Chemical Engineering and AIBN, The University of Queensland, St Lucia, Brisbane, QLD 4072 (Australia); Lim, Melvin [Division of Environmental and Water Resources Engineering, School of Civil and Environmental Engineering, Nanyang Technological University, 639798 (Singapore)

2010-01-15

Multilayered films of cobalt oxyhydroxide nanowires (CoOOHNW) and exfoliated manganese oxide nanosheet (MONS) are fabricated by potentiostatic deposition and electrostatic self-assembly on indium-tin oxide coated glass substrates. The morphology and chemical composition of these films are characterized by scanning electron microscopy (SEM) and X-ray photoelectron spectra (XPS) and the potential application as electrochemical supercapacitors are investigated using cyclic voltammetry and charge-discharge measurements. These ITO/CoOOHNW/MONS multilayered film electrodes exhibit excellent electrochemical capacitance properties, including high specific capacitance (507 F g{sup -1}) and long cycling durability (less 2% capacity loss after 5000 charge/discharge cycles). These characteristics indicate that these newly developed films may find important application for electrochemical capacitors. (author)

Direct Mismatch Characterization of femto-Farad Capacitors

KAUST Repository

Omran, Hesham

2015-08-17

Reducing the capacitance of programmable capacitor arrays, commonly used in analog integrated circuits, is necessary for low-energy applications. However, limited mismatch data is available for small capacitors. We report mismatch measurement for a 2fF poly-insulator-poly (PIP) capacitor, which is the smallest reported PIP capacitor to the best of the authors’ knowledge. Instead of using complicated custom onchip circuitry, direct mismatch measurement is demonstrated and verified using Monte Carlo Simulations and experimental measurements. Capacitive test structures composed of 9 bit programmable capacitor arrays (PCAs) are implemented in a low-cost 0:35m CMOS process. Measured data is compared to mismatch of large PIP capacitors, theoretical models, and recently published data. Measurement results indicate an estimated average relative standard deviation of 0.43% for the 2fF unit capacitor, which is better than the reported mismatch of metal-oxide-metal (MOM) fringing capacitors implemented in an advanced 32nm CMOS process.

Direct Mismatch Characterization of femto-Farad Capacitors

KAUST Repository

Omran, Hesham; Elafandy, Rami T.; Arsalan, Muhammad; Salama, Khaled N.

2015-01-01

Reducing the capacitance of programmable capacitor arrays, commonly used in analog integrated circuits, is necessary for low-energy applications. However, limited mismatch data is available for small capacitors. We report mismatch measurement for a 2fF poly-insulator-poly (PIP) capacitor, which is the smallest reported PIP capacitor to the best of the authors’ knowledge. Instead of using complicated custom onchip circuitry, direct mismatch measurement is demonstrated and verified using Monte Carlo Simulations and experimental measurements. Capacitive test structures composed of 9 􀀀 bit programmable capacitor arrays (PCAs) are implemented in a low-cost 0:35m CMOS process. Measured data is compared to mismatch of large PIP capacitors, theoretical models, and recently published data. Measurement results indicate an estimated average relative standard deviation of 0.43% for the 2fF unit capacitor, which is better than the reported mismatch of metal-oxide-metal (MOM) fringing capacitors implemented in an advanced 32nm CMOS process.

Nanostructured Electrode Materials for Electrochemical Capacitor Applications

Directory of Open Access Journals (Sweden)

Hojin Choi

2015-06-01

Full Text Available The advent of novel organic and inorganic nanomaterials in recent years, particularly nanostructured carbons, conducting polymers, and metal oxides, has enabled the fabrication of various energy devices with enhanced performance. In this paper, we review in detail different nanomaterials used in the fabrication of electrochemical capacitor electrodes and also give a brief overview of electric double-layer capacitors, pseudocapacitors, and hybrid capacitors. From a materials point of view, the latest trends in electrochemical capacitor research are also discussed through extensive analysis of the literature and by highlighting notable research examples (published mostly since 2013. Finally, a perspective on next-generation capacitor technology is also given, including the challenges that lie ahead.

Nanohybrid capacitor: the next generation electrochemical capacitors

Energy Technology Data Exchange (ETDEWEB)

Naoi, K. [Institute of Symbiotic Science and Technology, Tokyo University of Agriculture and Technology, 2-24-16 Naka-cho, Koganei, Tokyo 184-8558 (Japan)

2010-10-15

Conventional electric double layer capacitors (EDLC) designed with two symmetrical activated carbon electrodes can deliver substantially more power than similar size Li-ion batteries. There is presently a major effort to increase the energy density of EDLC s up to a target value in the vicinity of 20-30 Wh kg{sup -1}.The present review article deals with the recent contributions to get this high energy density and new approaches that have been made to increase the withstanding voltage of the EDLCs. Important alternative approach to meet this goal that is under serious investigation is to develop an asymmetric (hybrid) capacitors. Hybrid capacitor systems are the promising approach to meet the goal to effectively increase the energy density. The investigation is to develop hybrid capacitors has been initiated by Li-ion capacitors. And, now Nanohybrid capacitor certainly achieves as high energy density as Li-ion capacitors with higher stability, higher safety and higher productivity. This is the new lithium-ion based hybrid capacitor using the lithium titanate (Li{sub 4}Ti{sub 5}O{sub 12}) negative intercalation electrode that can operate at unusually high current densities. The high-rate Li{sub 4}Ti{sub 5}O{sub 12} negative electrode has a unique nano-structure consisting of unusually small nano-crystalline Li{sub 4}Ti{sub 5}O{sub 12} nucleated and grafted onto carbon nano-fiber anchors (nc-Li{sub 4}Ti{sub 5}O{sub 12}/CNF). (Abstract Copyright [2010], Wiley Periodicals, Inc.)

Reversible post-breakdown conduction in aluminum oxide-polymer capacitors

NARCIS (Netherlands)

Chen, Qian; Gomes, H.L.; Rocha, P.R.F.; Leeuw, de D.M.; Meskers, S.C.J.

2013-01-01

Aluminum/Al2O3/polymer/metal capacitors submitted to a low-power constant current stress undergo dielectric breakdown. The post-breakdown conduction is metastable, and over time the capacitors recover their original insulating properties. The decay of the conduction with time follows a power law

Influence of oxidation temperature on the interfacial properties of n-type 4H-SiC MOS capacitors

Energy Technology Data Exchange (ETDEWEB)

Jia, Yifan; Lv, Hongliang [School of Microelectronics, Xidian University, Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, Xi’an 710071 (China); Song, Qingwen, E-mail: qwsong@xidian.edu.cn [School of Microelectronics, Xidian University, Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, Xi’an 710071 (China); School of Advanced Materials and Nanotechnology, Xidian University, Xi’an 710071 (China); Tang, Xiaoyan, E-mail: xytang@xidian.edu.cn [School of Microelectronics, Xidian University, Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, Xi’an 710071 (China); Xiao, Li; Wang, Liangyong; Tang, Guangming [Zhongxing Telecommunication Equipment Corporation, Shenzhen 518057 (China); Zhang, Yimen; Zhang, Yuming [School of Microelectronics, Xidian University, Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, Xi’an 710071 (China)

2017-03-01

Highlights: • Effect of oxidation temperature on interfacial properties of SiO{sub 2}/SiC is investigated. • Raising the oxidation temperature effectively decreases the density of NITs and N{sub eff}. • The higher oxidation temperature reduces the surface RMS roughness of the grow SiO{sub 2}. • SIMS and XPS results reveal the improvement mechanism of high temperature oxidation. - Abstract: The effect of oxidation temperature on interfacial properties of n-type 4H-SiC metal-oxide-semiconductor capacitors has been systematically investigated. Thermal dry oxidation process with three different oxidation temperatures 1200 °C, 1300 °C and 1350 °C were employed to grow SiO{sub 2} dielectric, following by the standard post-oxidation annealing (POA) in NO ambience at 1175 °C for 2 h. The root mean square (RMS) roughness measured by Atomic Force Microscopy for the thermally grown SiO{sub 2} before POA process is reduced with increasing the oxidation temperature, obtaining an atomically flat surface with a RMS of 0.157 nm from the sample oxidized at 1350 °C. Several kinds of electrical measurements were used to evaluate the densities of near interface traps and effective fixed dielectric charge for the samples, exhibiting a trend reduced with increasing the oxidation temperature. The interface state density of 3 × 10{sup 11} cm{sup −2}eV{sup −1} at 0.2 eV from the conduction band edge was achieved from conductance method measurement for the sample oxidized at 1350 °C. The results from Secondary Ion Mass Spectroscopy and X-ray Photoelectron Spectroscopy demonstrate that high oxidation temperature can reduce the width of transition layer, the excess Si and silicon suboxide compositions near the interface, leading to effective improvement of the interfacial properties.

Breakdown properties of irradiated MOS capacitors

International Nuclear Information System (INIS)

Paccagnella, A.; Candelori, A.; Pellizzer, F.; Fuochi, P.G.; Lavale, M.

1996-01-01

The authors have studied the effects of ionizing and non-ionizing radiation on the breakdown properties of different types of MOS capacitors, with thick (200 nm) and thin (down to 8 nm) oxides. In general, no large variations of the average breakdown field, time-to-breakdown at constant voltage, or charge-to-breakdown at constant voltage, or charge-to-breakdown values have been observed after high dose irradiation (20 Mrad(Si) 9 MeV electrons on thin and thick oxides, 17(Si) Mrad Co 60 gamma and 10 14 neutrons/cm 2 only on thick oxides). However, some modifications of the cumulative failure distributions have been observed in few of the oxides tested

Effect of Reverse Bias Stress on Leakage Currents and Breakdown Voltages of Solid Tantalum Capacitors

Science.gov (United States)

Teverovsky, Alexander A.

2011-01-01

The majority of solid tantalum capacitors are produced by high-temperature sintering of a fine tantalum powder around a tantalum wire followed by electrolytic anodization that forms a thin amorphous Ta2O5 dielectric layer and pyrolysis of manganese nitrite on the oxide to create a conductive manganese dioxide electrode. A contact to tantalum wire is used as anode terminal and to the manganese layer as a cathode terminal of the device. This process results in formation of an asymmetric Ta -- Ta2O5 -- MnO2 capacitor that has different characteristics at forward (positive bias applied to tantalum) and reverse (positive bias applied to manganese cathode) voltages. Reverse bias currents might be several orders of magnitude larger than forward leakage currents so I-V characteristics of tantalum capacitors resemble characteristics of semiconductor rectifiers. Asymmetric I-V characteristics of Ta -- anodic Ta2O5 systems have been observed at different top electrode materials including metals, electrolytes, conductive polymers, and manganese oxide thus indicating that this phenomenon is likely related to the specifics of the Ta -- Ta2O5 interface. There have been multiple attempts to explain rectifying characteristics of capacitors employing anodic tantalum pentoxide dielectrics. A brief review of works related to reverse bias (RB) behavior of tantalum capacitors shows that the mechanism of conduction in Ta -- Ta2O5 systems is still not clear and more testing and analysis is necessary to understand the processes involved. If tantalum capacitors behave just as rectifiers, then the assessment of the safe reverse bias operating conditions would be a relatively simple task. Unfortunately, these parts can degrade with time under reverse bias significantly, and this further complicates analysis of the I-V characteristics and establishing safe operating areas of the parts. On other hand, time dependence of reverse currents might provide additional information for investigation of

Effects of layer sequence and postdeposition annealing temperature on performance of La2O3 and HfO2 multilayer composite oxides on In0.53Ga0.47As for MOS capacitor application

Science.gov (United States)

Wu, Wen-Hao; Lin, Yueh-Chin; Chuang, Ting-Wei; Chen, Yu-Chen; Hou, Tzu-Ching; Yao, Jing-Neng; Chang, Po-Chun; Iwai, Hiroshi; Kakushima, Kuniyuki; Chang, Edward Yi

2014-03-01

In this paper, we report on high-k composite oxides that are formed by depositing multiple layers of HfO2 and La2O3 on In0.53Ga0.47As for MOS device application. Both multilayer HfO2 (0.8 nm)/La2O3 (0.8 nm)/In0.53Ga0.47As and La2O3 (0.8 nm)/HfO2 (0.8 nm)/In0.53Ga0.47As MOS structures were investigated. The effects of oxide thickness and postdeposition annealing (PDA) temperature on the interface properties of the composite oxide MOS capacitors were studied. It was found that a low CET of 1.41 nm at 1 kHz was achieved using three-layer composite oxides. On the other hand, a small frequency dispersion of 2.8% and an excellent Dit of 7.0 × 1011 cm-2·eV-1 can be achieved using multiple layers of La2O3 (0.8 nm) and HfO2 (0.8 nm) on the In0.53Ga0.47As MOS capacitor with optimum thermal treatment and layer thickness.

α-Fe2O3 nanotubes-reduced graphene oxide composites as synergistic electrochemical capacitor materials.

Science.gov (United States)

Lee, K K; Deng, S; Fan, H M; Mhaisalkar, S; Tan, H R; Tok, E S; Loh, K P; Chin, W S; Sow, C H

2012-04-28

We present a facile approach for the fabrication of a nanocomposite comprising α-Fe(2)O(3) nanotubes (NTs) anchored on reduced graphene oxide (rGO) for electrochemical capacitors (ECs). The hollow tubular structure of the α-Fe(2)O(3) NTs presents a high surface area for reaction, while the incorporation of rGO provides an efficient two-dimensional conductive pathway to allow fast, reversible redox reaction. As a result, the nanocomposite materials exhibit a specific capacitance which is remarkably higher (~7 times) than α-Fe(2)O(3) NTs alone. In addition, the nanocomposites show excellent cycling life and large negative potential window. These findings suggest that such nanocomposites are a promising candidate as negative electrodes in asymmetrical capacitors with neutral electrolytes. This journal is © The Royal Society of Chemistry 2012

Total-ionizing-dose effects on isolation oxides in modern CMOS technologies

International Nuclear Information System (INIS)

Barnaby, Hugh J.; Mclain, Michael; Esqueda, Ivan Sanchez

2007-01-01

This paper presents experimental data on the total dose response of deep sub-micron bulk CMOS devices and integrated circuits. Ionizing radiation experiments on shallow trench isolation (STI) field oxide MOS capacitors (FOXCAP) indicate a characteristic build-up of radiation-induced defects in the dielectric. In this paper, capacitors fabricated with STI, thermal, SIMOX and bipolar base oxides of similar thickness are compared and show the STI oxide to be most susceptible to radiation effects. Experimental data on irradiated shift registers and n-channel MOSFETs are also presented. These data indicate that radiation damage to the STI can increase the off-state current of n-channel devices and the standby current of CMOS integrated circuits

Effect of capacitor loss on discharging characteristics of xenon flash lamp

International Nuclear Information System (INIS)

Zhang Chu; Lin Dejiang; Xu Chunmei; Shen Hongbin; Chen Xiaohan

2012-01-01

The effect of storage capacitor's loss on the discharging characteristics of the xenon flash lamp was studied, and the xenon flash lamp discharging circuit was analyzed and improved. The capacitor can be equivalent to a series of an ideal capacitor and loss resistance. The improved formula of the xenon lamp discharging characteristics was given when actual capacitance loss is not zero, and the xenon lamp discharging current and discharging power are calculated and analyzed in detail with the increase of the capacitor loss. The results show that the increase of loss will lead to the decrease of xenon lamp discharging current and peak power and the xenon lamp flash time, and influence laser pumping efficiency. The loss will also lead to the capacitor inverse charging in LC discharging circuit; this will influence normal working of the capacitor and decrease the lift of the xenon lamp. The actual energy storage capacitor charging and discharging experiments show that the increase of capacitor loss will lead to the decrease of xenon lamp light-emitting waveform peak, shortening of the flash time and increase of the electrode sputter, thus verity, the reasonableness of theoretical analysis. In addition, the experiments show that environmental factors have very significant impact on the increase of the storage capacitor loss. (authors)

Coating manganese oxide onto graphite electrodes by immersion for electrochemical capacitors

International Nuclear Information System (INIS)

Lin, C.-C.; Chen, H.-W.

2009-01-01

In this study, manganese oxide was coated on a graphite electrode by immersion. Durations for immersion were varied to control the amount of manganese oxide coated onto the electrode surface. Maximum capacitance of 556 mF cm -2 was obtained in 0.5 M LiCl and with better/superior conditions (immersion time = 80 min and potential scan rate = 10 mV s -1 ). In addition, cyclic voltammograms of the prepared electrode at different potential scan rates exhibited the approximately rectangular and symmetric current-potential characteristics of a capacitor. Furthermore, the chronopotentiometry (CP) charge-discharge curves of the electrode prepared at 80 min of immersion time with a constant current of 1 mA were symmetric and similar isosceles triangles, which demonstrate its high electrochemical reversibility and good stability. Finally, under scanning electron microscope (SEM), the surface of the electrode prepared at 80 min of immersion time and after 1500 cycles of potential cycling revealed that numerously three-dimensional network of macropores appeared on large spherical grains

High-performance symmetric electrochemical capacitor based on graphene foam and nanostructured manganese oxide

Directory of Open Access Journals (Sweden)

Abdulhakeem Bello

2013-08-01

Full Text Available We have fabricated a symmetric electrochemical capacitor with high energy and power densities based on a composite of graphene foam (GF with ∼80 wt% of manganese oxide (MnO2 deposited by hydrothermal synthesis. Raman spectroscopy and X-ray diffraction measurements showed the presence of nanocrystalline MnO2 on the GF, while scanning and transmission electron microscopies showed needle-like manganese oxide coated and anchored onto the surface of graphene. Electrochemical measurements of the composite electrode gave a specific capacitance of 240 Fg−1 at a current density of 0.1 Ag−1 for symmetric supercapacitors using a two-electrode configuration. A maximum energy density of 8.3 Whkg−1 was obtained, with power density of 20 kWkg−1 and no capacitance loss after 1000 cycles. GF is an excellent support for pseudo-capacitive oxide materials such as MnO2, and the composite electrode provided a high energy density due to a combination of double-layer and redox capacitance mechanisms.

Capacitors.

Science.gov (United States)

Trotter, Donald M., Jr.

1988-01-01

Presents a historical backdrop for a discussion of capacitor design and function. Discusses the production, importance, and function of two types of miniature capacitors; electrolytic and multilayer ceramic capacitors. Describes the function of these miniature capacitors in comparison to the Leyden jar, a basic demonstration of capacitance. (CW)

cw argon laser annealing of anodic oxide on GaAs

International Nuclear Information System (INIS)

Chakravarti, S.N.; Das, P.; Webster, R.T.; Bhat, K.N.

1981-01-01

Anodic oxide films (850 +- 50 A thick) grown on n + (100) bulk GaAs were subjected to selective area annealing using a cw argon laser operating at an output power of 1.2 W. Capacitance-voltage (C-V) measurements performed on Al-anodic oxide-GaAs MOS capacitor structures show that laser-annealed capacitor dots have greatly reduced field-induced hysteresis effects in their capacitance-voltage characteristics compared to the unannealed ones. The oxide leakage current also shows a significant improvement: the leakage current magnitude of MOS capacitors in laser-annealed oxide island is over four orders of magnitude less than the oxide region which was not exposed to the laser radiation. Dielectric breakdown measurement indicates that laser-annealed capacitors have considerably higher breakdown voltages, about a factor of 2 higher than the unannealed capacitors

Investigation of embedded perovskite nanoparticles for enhanced capacitor permittivities.

Science.gov (United States)

Krause, Andreas; Weber, Walter M; Pohl, Darius; Rellinghaus, Bernd; Verheijen, Marcel; Mikolajick, Thomas

2014-11-26

Growth experiments show significant differences in the crystallization of ultrathin CaTiO3 layers on polycrystalline Pt surfaces. While the deposition of ultrathin layers below crystallization temperature inhibits the full layer crystallization, local epitaxial growth of CaTiO3 crystals on top of specific oriented Pt crystals occurs. The result is a formation of crystals embedded in an amorphous matrix. An epitaxial alignment of the cubic CaTiO3 ⟨111⟩ direction on top of the underlying Pt {111} surface has been observed. A reduced forming energy is attributed to an interplay of surface energies at the {111} interface of both materials and CaTiO3 nanocrystallites facets. The preferential texturing of CaTiO3 layers on top of Pt has been used in the preparation of ultrathin metal-insulator-metal capacitors with 5-30 nm oxide thickness. The effective CaTiO3 permittivity in the capacitor stack increases to 55 compared to capacitors with amorphous layers and a permittivity of 28. The isolated CaTiO3 crystals exhibit a passivation of the CaTiO3 grain surfaces by the surrounding amorphous matrix, which keeps the capacitor leakage current at ideally low values comparable for those of amorphous thin film capacitors.

Pseudo-capacitor device for aqueous electrolytes

Science.gov (United States)

Prakash, Jai; Thackeray, Michael M.; Dees, Dennis W.; Vissers, Donald R.; Myles, Kevin M.

1998-01-01

A pseudo-capacitor having a high energy storage capacity develops a double layer capacitance as well as a Faradaic or battery-like redox reaction, also referred to as pseudo-capacitance. The Faradaic reaction gives rise to a capacitance much greater than that of the typical ruthenate oxide ultracapacitor which develops only charge separation-based double layer capacitance. The capacitor employs a lead and/or bismuth/ruthenate and/or iridium system having the formula A.sub.2 ›B.sub.2-x Pb.sub.x !O.sub.7-y, where A=Pb, Bi, and B=Ru, Ir, and Ocapacitor. The amount of expensive ruthenate and iridium can be substantially reduced in the pseudo-capacitor by increasing the lead content while improving energy storage capacity.

Effect of Preconditioning and Soldering on Failures of Chip Tantalum Capacitors

Science.gov (United States)

Teverovsky, Alexander A.

2014-01-01

Soldering of molded case tantalum capacitors can result in damage to Ta205 dielectric and first turn-on failures due to thermo-mechanical stresses caused by CTE mismatch between materials used in the capacitors. It is also known that presence of moisture might cause damage to plastic cases due to the pop-corning effect. However, there are only scarce literature data on the effect of moisture content on the probability of post-soldering electrical failures. In this work, that is based on a case history, different groups of similar types of CWR tantalum capacitors from two lots were prepared for soldering by bake, moisture saturation, and longterm storage at room conditions. Results of the testing showed that both factors: initial quality of the lot, and preconditioning affect the probability of failures. Baking before soldering was shown to be effective to prevent failures even in lots susceptible to pop-corning damage. Mechanism of failures is discussed and recommendations for pre-soldering bake are suggested based on analysis of moisture characteristics of materials used in the capacitors' design.

Electrical analysis of high dielectric constant insulator and metal gate metal oxide semiconductor capacitors on flexible bulk mono-crystalline silicon

KAUST Repository

Ghoneim, Mohamed T.; Rojas, Jhonathan Prieto; Young, Chadwin D.; Bersuker, Gennadi; Hussain, Muhammad Mustafa

2015-01-01

We report on the electrical study of high dielectric constant insulator and metal gate metal oxide semiconductor capacitors (MOSCAPs) on a flexible ultra-thin (25 μm) silicon fabric which is peeled off using a CMOS compatible process from a standard

Radiation effects in polycarbonate capacitors

Directory of Open Access Journals (Sweden)

Vujisić Miloš

2009-01-01

Full Text Available The aim of this paper is to examine the influence of neutron and gamma irradiation on the dissipation factor and capacitance of capacitors with polycarbonate dielectrics. The operation of capacitors subject to extreme conditions, such as the presence of ionizing radiation fields, is of special concern in military industry and space technology. Results obtained show that the exposure to a mixed neutron and gamma radiation field causes a decrease of capacitance, while the loss tangent remains unchanged.

Energy Efficient Graphene Based High Performance Capacitors.

Science.gov (United States)

Bae, Joonwon; Kwon, Oh Seok; Lee, Chang-Soo

2017-07-10

Graphene (GRP) is an interesting class of nano-structured electronic materials for various cutting-edge applications. To date, extensive research activities have been performed on the investigation of diverse properties of GRP. The incorporation of this elegant material can be very lucrative in terms of practical applications in energy storage/conversion systems. Among various those systems, high performance electrochemical capacitors (ECs) have become popular due to the recent need for energy efficient and portable devices. Therefore, in this article, the application of GRP for capacitors is described succinctly. In particular, a concise summary on the previous research activities regarding GRP based capacitors is also covered extensively. It was revealed that a lot of secondary materials such as polymers and metal oxides have been introduced to improve the performance. Also, diverse devices have been combined with capacitors for better use. More importantly, recent patents related to the preparation and application of GRP based capacitors are also introduced briefly. This article can provide essential information for future study. Copyright© Bentham Science Publishers; For any queries, please email at epub@benthamscience.org.

Nitrogen-Doped Holey Graphene Film-Based Ultrafast Electrochemical Capacitors.

Science.gov (United States)

Zhou, Qinqin; Zhang, Miao; Chen, Ji; Hong, Jong-Dal; Shi, Gaoquan

2016-08-17

The commercialized aluminum electrolytic capacitors (AECs) currently used for alternating current (AC) line-filtering are usually the largest components in the electronic circuits because of their low specific capacitances and bulky sizes. Herein, nitrogen-doped holey graphene (NHG) films were prepared by thermal annealing the composite films of polyvinylpyrrolidone (PVP), graphene oxide (GO), and ferric oxide (Fe2O3) nanorods followed by chemical etching with hydrochloride acid. The typical electrochemical capacitor with NHG electrodes exhibited high areal and volumetric specific capacitances of 478 μF cm(-2) and 1.2 F cm(-3) at 120 Hz, ultrafast frequency response with a phase angle of -81.2° and a resistor-capacitor time constant of 203 μs at 120 Hz, as well as excellent cycling stability. Thus, it is promising to replace conventional AEC for AC line-filtering in miniaturized electronics.

Reliability-oriented Design of a Cost-effective Active Capacitor

DEFF Research Database (Denmark)

Wang, Haoran; Wang, Huai

2017-01-01

This paper presents the reliability-oriented design of a two-terminal active capacitor proposed recently. The two-terminal active capacitor has the same level of convenience as a passive capacitor with reduced requirement of overall energy storage. In order to fully explore the potential...... of the proposed concept, a comprehensive design procedure is necessary to optimally sizing the key components of the active capacitor in terms of cost and reliability. Moreover, the inherent condition monitoring capability of the active capacitor is discussed by utilizing the existing feedback signals. A 500 W...

Plasma-assisted atomic layer deposition of TiN/Al2O3 stacks for metal-oxide-semiconductor capacitor applications

NARCIS (Netherlands)

Hoogeland, D.; Jinesh, K.B.; Roozeboom, F.; Besling, W.F.A.; Sanden, van de M.C.M.; Kessels, W.M.M.

2009-01-01

By employing plasma-assisted atomic layer deposition, thin films of Al2O3 and TiN are subsequently deposited in a single reactor at a single substrate temperature with the objective of fabricating high-quality TiN/Al2O3 / p-Si metal-oxide-semiconductor capacitors. Transmission electron microscopy

Multilayer capacitors, method for making multilayer capacitors

Science.gov (United States)

Ma, Beihai; Balachandran, Uthamalingam

2018-03-06

The invention provides a stacked capacitor configuration comprising subunits each with a thickness of as low as 20 microns. Also provided is combination capacitor and printed wire board wherein the capacitor is encapsulated by the wire board. The invented capacitors are applicable in micro-electronic applications and high power applications, whether it is AC to DC or DC to AC, or DC to DC.

Capacitor Discharge - A Capacitor Tutorial [video

OpenAIRE

Naval Postgraduate School Physics

2014-01-01

NPS Physics Physics Demonstrations Here's a capacitor discharge demonstrated by physicist Dr. Dernardo. Dr. D gives a nice capacitor lesson along with some fireworks. Charging and Discharging a Capacitor is dangerous. Do not try this at home. Dr. Bruce Denardo uses eleven 9V batteries, connected in series for a total of 99 creating a pretty large spark.

Structural and dielectric characterization of sputtered Tantalum Titanium Oxide thin films for high temperature capacitor applications

Energy Technology Data Exchange (ETDEWEB)

Rouahi, A., E-mail: rouahi_ahlem@yahoo.fr [Univ. Grenoble Alpes, G2Elab, F-38000 (France); Laboratoire Matériaux Organisation et Propriétés (LMOP), Université de Tunis El Manar, 2092 Tunis (Tunisia); Challali, F. [Laboratoire des Sciences des Procédés et des Matériaux (LSPM)-CNRS-UPR3407, Université Paris13, 99 Avenue Jean-Baptiste Clément, 93430, Villetaneuse (France); Dakhlaoui, I. [Laboratoire Matériaux Organisation et Propriétés (LMOP), Université de Tunis El Manar, 2092 Tunis (Tunisia); Vallée, C. [CNRS, LTM, CEA-LETI, F-38000 Grenoble (France); Salimy, S. [Institut des Matériaux Jean Rouxel (IMN) UMR CNRS 6502, Université de Nantes, 2, rue de la Houssinière, B.P. 32229, 44322, Nantes, Cedex 3 (France); Jomni, F.; Yangui, B. [Laboratoire Matériaux Organisation et Propriétés (LMOP), Université de Tunis El Manar, 2092 Tunis (Tunisia); Besland, M.P.; Goullet, A. [Institut des Matériaux Jean Rouxel (IMN) UMR CNRS 6502, Université de Nantes, 2, rue de la Houssinière, B.P. 32229, 44322, Nantes, Cedex 3 (France); Sylvestre, A. [Univ. Grenoble Alpes, G2Elab, F-38000 (France)

2016-05-01

In this study, the dielectric properties of metal-oxide-metal capacitors based on Tantalum Titanium Oxide (TiTaO) thin films deposited by reactive magnetron sputtering on aluminum bottom electrode are investigated. The structure of the films was characterized by Atomic Force Microscopy, X-ray diffraction and X-ray photoelectron spectroscopy. The dielectric properties of TiTaO thin films were studied by complex impedance spectroscopy over a wide frequency range (10{sup -2} - to 10{sup 5} Hz) and temperatures in -50 °C to 325 °C range. The contributions of different phases, phases’ boundaries and conductivity effect were highlighted by Cole – Cole diagram (ε” versus ε’). Two relaxation processes have been identified in the electric modulus plot. A first relaxation process appears at low temperature with activation energy of 0.37 eV and it is related to the motion of Ti{sup 4+} (Skanavi’s model). A second relaxation process at high temperature is related to Maxwell-Wagner-Sillars relaxation with activation energy of 0.41 eV. - Highlights: • Titanium Tantalum Oxide thin films are grown on Aluminum substrate. • The existence of phases was confirmed by X-ray photoelectron spectroscopy. • Conductivity effect appears in Cole-Cole plot. • At low temperatures, a relaxation phenomenon obeys to Skanavi’s model. • Maxwell-Wagner-Sillars polarization is processed at high temperatures.

Structural and electrical characteristics of high-k/metal gate metal oxide semiconductor capacitors fabricated on flexible, semi-transparent silicon (100) fabric

KAUST Repository

Rojas, Jhonathan Prieto

2013-02-12

In pursuit of flexible computers with high performance devices, we demonstrate a generic process to fabricate 10 000 metal-oxide-semiconductor capacitors (MOSCAPs) with semiconductor industry\\'s most advanced high-k/metal gate stacks on widely used, inexpensive bulk silicon (100) wafers and then using a combination of iso-/anisotropic etching to release the top portion of the silicon with the already fabricated devices as a mechanically flexible (bending curvature of 133 m−1), optically semi-transparent silicon fabric (1.5 cm × 3 cm × 25 μm). The electrical characteristics show 3.7 nm effective oxide thickness, −0.2 V flat band voltage, and no hysteresis from the fabricated MOSCAPs.

Structural and electrical characteristics of high-k/metal gate metal oxide semiconductor capacitors fabricated on flexible, semi-transparent silicon (100) fabric

KAUST Repository

Rojas, Jhonathan Prieto; Hussain, Muhammad Mustafa; Sevilla, Galo T.

2013-01-01

In pursuit of flexible computers with high performance devices, we demonstrate a generic process to fabricate 10 000 metal-oxide-semiconductor capacitors (MOSCAPs) with semiconductor industry's most advanced high-k/metal gate stacks on widely used, inexpensive bulk silicon (100) wafers and then using a combination of iso-/anisotropic etching to release the top portion of the silicon with the already fabricated devices as a mechanically flexible (bending curvature of 133 m−1), optically semi-transparent silicon fabric (1.5 cm × 3 cm × 25 μm). The electrical characteristics show 3.7 nm effective oxide thickness, −0.2 V flat band voltage, and no hysteresis from the fabricated MOSCAPs.

Pressure Effects Analysis of National Ignition Facility Capacitor Module Events

International Nuclear Information System (INIS)

Brereton, S; Ma, C; Newton, M; Pastrnak, J; Price, D; Prokosch, D

1999-01-01

Capacitors and power conditioning systems required for the National Ignition Facility (NIF) have experienced several catastrophic failures during prototype demonstration. These events generally resulted in explosion, generating a dramatic fireball and energetic shrapnel, and thus may present a threat to the walls of the capacitor bay that houses the capacitor modules. The purpose of this paper is to evaluate the ability of the capacitor bay walls to withstand the overpressure generated by the aforementioned events. Two calculations are described in this paper. The first one was used to estimate the energy release during a fireball event and the second one was used to estimate the pressure in a capacitor module during a capacitor explosion event. Both results were then used to estimate the subsequent overpressure in the capacitor bay where these events occurred. The analysis showed that the expected capacitor bay overpressure was less than the pressure tolerance of the walls. To understand the risk of the above events in NIF, capacitor module failure probabilities were also calculated. This paper concludes with estimates of the probability of single module failure and multi-module failures based on the number of catastrophic failures in the prototype demonstration facility

Investigation about decoupling capacitors of PMT voltage divider effects on neutron-gamma discrimination

International Nuclear Information System (INIS)

Divani, Nazila; Firoozabadi, Mohammad M.; Bayat, Esmail

2014-01-01

Scintillators are almost used in any nuclear laboratory. These detectors combine of scintillation materials, PMT and a voltage divider. Voltage dividers are different in resistive ladder design. But the effect of decoupling capacitors and damping resistors haven’t discussed yet. In this paper at first a good equilibrium circuit designed for PMT, and it was used for investigating about capacitors and resistors in much manner. Results show that decoupling capacitors have great effect on PMT output pulses. In this research, it was tried to investigate the effect of Capacitor’s value and places on PMT voltage divider in Neutron-Gamma discrimination capability. Therefore, the voltage divider circuit for R329-02 Hamamatsu PMT was made and Zero Cross method used for neutron-gamma discrimination. The neutron source was a 20Ci Am-Be. Anode and Dynode pulses and discrimination spectrum were saved. The results showed that the pulse height and discrimination quality change with the value and setting of capacitors

Interface Trap Profiles in 4H- and 6H-SiC MOS Capacitors with Nitrogen- and Phosphorus-Doped Gate Oxides

Science.gov (United States)

Jiao, C.; Ahyi, A. C.; Dhar, S.; Morisette, D.; Myers-Ward, R.

2017-04-01

We report results on the interface trap density ( D it) of 4H- and 6H-SiC metal-oxide-semiconductor (MOS) capacitors with different interface chemistries. In addition to pure dry oxidation, we studied interfaces formed by annealing thermal oxides in NO or POCl3. The D it profiles, determined by the C- ψ s method, show that, although the as-oxidized 4H-SiC/SiO2 interface has a much higher D it profile than 6H-SiC/SiO2, after postoxidation annealing (POA), both polytypes maintain comparable D it near the conduction band edge for the gate oxides incorporated with nitrogen or phosphorus. Unlike most conventional C- V- or G- ω-based methods, the C- ψ s method is not limited by the maximum probe frequency, therefore taking into account the "fast traps" detected in previous work on 4H-SiC. The results indicate that such fast traps exist near the band edge of 6H-SiC also. For both polytypes, we show that the total interface trap density ( N it) integrated from the C- ψ s method is several times that obtained from the high-low method. The results suggest that the detected fast traps have a detrimental effect on electron transport in metal-oxide-semiconductor field-effect transistor (MOSFET) channels.

Atomic Layer Deposition Alumina-Passivated Silicon Nanowires: Probing the Transition from Electrochemical Double-Layer Capacitor to Electrolytic Capacitor.

Science.gov (United States)

Gaboriau, Dorian; Boniface, Maxime; Valero, Anthony; Aldakov, Dmitry; Brousse, Thierry; Gentile, Pascal; Sadki, Said

2017-04-19

Silicon nanowires were coated by a 1-5 nm thin alumina layer by atomic layer deposition (ALD) in order to replace poorly reproducible and unstable native silicon oxide by a highly conformal passivating alumina layer. The surface coating enabled probing the behavior of symmetric devices using such electrodes in the EMI-TFSI electrolyte, allowing us to attain a large cell voltage up to 6 V in ionic liquid, together with very high cyclability with less than 4% capacitance fade after 10 6 charge/discharge cycles. These results yielded fruitful insights into the transition between an electrochemical double-layer capacitor behavior and an electrolytic capacitor behavior. Ultimately, thin ALD dielectric coatings can be used to obtain hybrid devices exhibiting large cell voltage and excellent cycle life of dielectric capacitors, while retaining energy and power densities close to the ones displayed by supercapacitors.

Catechol-chitosan redox capacitor for added amplification in electrochemical immunoanalysis.

Science.gov (United States)

Yan, Kun; Liu, Yi; Guan, Yongguang; Bhokisham, Narendranath; Tsao, Chen-Yu; Kim, Eunkyoung; Shi, Xiao-Wen; Wang, Qin; Bentley, William E; Payne, Gregory F

2018-05-22

Antibodies are common recognition elements for molecular detection but often the signals generated by their stoichiometric binding must be amplified to enhance sensitivity. Here, we report that an electrode coated with a catechol-chitosan redox capacitor can amplify the electrochemical signal generated from an alkaline phosphatase (AP) linked immunoassay. Specifically, the AP product p-aminophenol (PAP) undergoes redox-cycling in the redox capacitor to generate amplified oxidation currents. We estimate an 8-fold amplification associated with this redox-cycling in the capacitor (compared to detection by a bare electrode). Importantly, this capacitor-based amplification is generic and can be coupled to existing amplification approaches based on enzyme-linked catalysis or magnetic nanoparticle-based collection/concentration. Thus, the capacitor should enhance sensitivities in conventional immunoassays and also provide chemical to electrical signal transduction for emerging applications in molecular communication. Copyright © 2018 Elsevier B.V. All rights reserved.

Ferroelectric Fractional-Order Capacitors

KAUST Repository

Agambayev, Agamyrat; Patole, Shashikant P.; Farhat, Mohamed; Elwakil, Ahmed; Bagci, Hakan; Salama, Khaled N.

2017-01-01

Poly(vinylidene fluoride)-based polymers and their blends are used to fabricate electrostatic fractional-order capacitors. This simple but effective method allows us to precisely tune the constant phase angle of the resulting fractional-order capacitor by changing the blend composition. Additionally, we have derived an empirical relation between the ratio of the blend constituents and the constant phase angle to facilitate the design of a fractional order capacitor with a desired constant phase angle. The structural composition of the fabricated blends is investigated using Fourier transform infrared spectroscopy and X-ray diffraction techniques.

Ferroelectric Fractional-Order Capacitors

KAUST Repository

Agambayev, Agamyrat

2017-07-25

Poly(vinylidene fluoride)-based polymers and their blends are used to fabricate electrostatic fractional-order capacitors. This simple but effective method allows us to precisely tune the constant phase angle of the resulting fractional-order capacitor by changing the blend composition. Additionally, we have derived an empirical relation between the ratio of the blend constituents and the constant phase angle to facilitate the design of a fractional order capacitor with a desired constant phase angle. The structural composition of the fabricated blends is investigated using Fourier transform infrared spectroscopy and X-ray diffraction techniques.

Ni-BaTiO3-Based Base-Metal Electrode (BME) Ceramic Capacitors for Space Applications

Science.gov (United States)

Liu, Donhang; Fetter, Lula; Meinhold, Bruce

2015-01-01

A multi-layer ceramic capacitor (MLCC) is a high-temperature (1350C typical) co-fired ceramic monolithic that is composed of many layers of alternately stacked oxide-based dielectric and internal metal electrodes. To make the dielectric layers insulating and the metal electrode layers conducting, only highly oxidation-resistant precious metals, such as platinum, palladium, and silver, can be used for the co-firing of insulating MLCCs in a regular air atmosphere. MLCCs made with precious metals as internal electrodes and terminations are called precious-metal electrode (PME) capacitors. Currently, all military and space-level applications only address the use of PME capacitors.

Space-charge Effect on Electroresistance in Metal-Ferroelectric-Metal capacitors

Science.gov (United States)

Tian, Bo Bo; Liu, Yang; Chen, Liu Fang; Wang, Jian Lu; Sun, Shuo; Shen, Hong; Sun, Jing Lan; Yuan, Guo Liang; Fusil, Stéphane; Garcia, Vincent; Dkhil, Brahim; Meng, Xiang Jian; Chu, Jun Hao

2015-12-01

Resistive switching through electroresistance (ER) effect in metal-ferroelectric-metal (MFM) capacitors has attracted increasing interest due to its potential applications as memories and logic devices. However, the detailed electronic mechanisms resulting in large ER when polarisation switching occurs in the ferroelectric barrier are still not well understood. Here, ER effect up to 1000% at room temperature is demonstrated in C-MOS compatible MFM nanocapacitors with a 8.8 nm-thick poly(vinylidene fluoride) (PVDF) homopolymer ferroelectric, which is very promising for silicon industry integration. Most remarkably, using theory developed for metal-semiconductor rectifying contacts, we derive an analytical expression for the variation of interfacial barrier heights due to space-charge effect that can interpret the observed ER response. We extend this space-charge model, related to the release of trapped charges by defects, to MFM structures made of ferroelectric oxides. This space-charge model provides a simple and straightforward tool to understand recent unusual reports. Finally, this work suggests that defect-engineering could be an original and efficient route for tuning the space-charge effect and thus the ER performances in future electronic devices.

Redox-capacitor to connect electrochemistry to redox-biology.

Science.gov (United States)

Kim, Eunkyoung; Leverage, W Taylor; Liu, Yi; White, Ian M; Bentley, William E; Payne, Gregory F

2014-01-07

It is well-established that redox-reactions are integral to biology for energy harvesting (oxidative phosphorylation), immune defense (oxidative burst) and drug metabolism (phase I reactions), yet there is emerging evidence that redox may play broader roles in biology (e.g., redox signaling). A critical challenge is the need for tools that can probe biologically-relevant redox interactions simply, rapidly and without the need for a comprehensive suite of analytical methods. We propose that electrochemistry may provide such a tool. In this tutorial review, we describe recent studies with a redox-capacitor film that can serve as a bio-electrode interface that can accept, store and donate electrons from mediators commonly used in electrochemistry and also in biology. Specifically, we (i) describe the fabrication of this redox-capacitor from catechols and the polysaccharide chitosan, (ii) discuss the mechanistic basis for electron exchange, (iii) illustrate the properties of this redox-capacitor and its capabilities for promoting redox-communication between biology and electrodes, and (iv) suggest the potential for enlisting signal processing strategies to "extract" redox information. We believe these initial studies indicate broad possibilities for enlisting electrochemistry and signal processing to acquire "systems level" redox information from biology.

Evaluation of Polymer Hermetically Sealed Tantalum Capacitors

Science.gov (United States)

Teverovsky, Alexander A.

2014-01-01

Polymer cathode tantalum capacitors have lower ESR (equivalent series resistance) compared to other types of tantalum capacitors and for this reason have gained popularity in the electronics design community. Their use allows improved performance of power supply systems along with substantial reduction of size and weight of the components used. However, these parts have poor thermal stability and can degrade in humid environments. Polymer hermetically sealed (PHS) capacitors avoid problems related to environmental degradation of molded case parts and can potentially replace current wet and solid hermetically sealed capacitors. In this work, PHS capacitors manufactured per DLA LAM DWG#13030 are evaluated for space applications. Several lots of capacitors manufactured over period from 2010 to 2014 were tested for the consistency of performance, electrical and thermal characteristics, highly accelerated life testing, and robustness under reverse bias and random vibration conditions. Special attention was given to analysis of leakage currents and the effect of long-term high temperature storage on capacitors in as is condition and after hermeticity loss. The results show that PHS capacitors might be especially effective for low-temperature applications or for system requiring a cold start-up. Additional screening and qualification testing have been recommended to assure the necessary quality of capacitors for space projects.

Split-phase motor running as capacitor starts motor and as capacitor run motor

Directory of Open Access Journals (Sweden)

Yahaya Asizehi ENESI

2016-07-01

Full Text Available In this paper, the input parameters of a single phase split-phase induction motor is taken to investigate and to study the output performance characteristics of capacitor start and capacitor run induction motor. The value of these input parameters are used in the design characteristics of capacitor run and capacitor start motor with each motor connected to rated or standard capacitor in series with auxiliary winding or starting winding respectively for the normal operational condition. The magnitude of capacitor that will develop maximum torque in capacitor start motor and capacitor run motor are investigated and determined by simulation. Each of these capacitors is connected to the auxiliary winding of split-phase motor thereby transforming it into capacitor start or capacitor run motor. The starting current and starting torque of the split-phase motor (SPM, capacitor run motor (CRM and capacitor star motor (CSM are compared for their suitability in their operational performance and applications.

Faraday Rotator 5 kV Capacitor Bank

International Nuclear Information System (INIS)

Fetterman, C.C.

1975-01-01

A Faraday rotator 5 kV capacitor bank is a pulsed output power supply used to energize Faraday rotators for optical isolation in the ''LLL kJ Glass Laser System.'' Each supply contains either one, two or three parallel 240 μF storage capacitors depending on the size of the isolator used. Generally, the ''A*''(216 μH) isolator is energized with one capacitor, the ''A''(116 μH) isolator uses two capacitors and the ''B''(87 μH) isolator requires three capacitors. All models of isolators have been tested with four capacitors under maximum voltage and 25 feet of RG-217 cable with no hazardous effects. Except for the number of capacitors in each unit, the supplies are otherwise physically identical

Capacitance characteristics of metal-oxide-semiconductor capacitors with a single layer of embedded nickel nanoparticles for the application of nonvolatile memory

International Nuclear Information System (INIS)

Wei, Li; Ling, Xu; Wei-Ming, Zhao; Hong-Lin, Ding; Zhong-Yuan, Ma; Jun, Xu; Kun-Ji, Chen

2010-01-01

This paper reports that metal-oxide-semiconductor (MOS) capacitors with a single layer of Ni nanoparticles were successfully fabricated by using electron-beam evaporation and rapid thermal annealing for application to nonvolatile memory. Experimental scanning electron microscopy images showed that Ni nanoparticles of about 5 nm in diameter were clearly embedded in the SiO 2 layer on p-type Si (100). Capacitance–voltage measurements of the MOS capacitor show large flat-band voltage shifts of 1.8 V, which indicate the presence of charge storage in the nickel nanoparticles. In addition, the charge-retention characteristics of MOS capacitors with Ni nanoparticles were investigated by using capacitance–time measurements. The results showed that there was a decay of the capacitance embedded with Ni nanoparticles for an electron charge after 10 4 s. But only a slight decay of the capacitance originating from hole charging was observed. The present results indicate that this technique is promising for the efficient formation or insertion of metal nanoparticles inside MOS structures. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

Electrical properties of metal/Al2O3/In0.53Ga0.47As capacitors grown on InP

Science.gov (United States)

Ferrandis, Philippe; Billaud, Mathilde; Duvernay, Julien; Martin, Mickael; Arnoult, Alexandre; Grampeix, Helen; Cassé, Mikael; Boutry, Hervé; Baron, Thierry; Vinet, Maud; Reimbold, Gilles

2018-04-01

To overcome the Fermi-level pinning in III-V metal-oxide-semiconductor capacitors, attention is usually focused on the choice of dielectric and surface chemical treatments prior to oxide deposition. In this work, we examined the influence of the III-V material surface cleaning and the semiconductor growth technique on the electrical properties of metal/Al2O3/In0.53Ga0.47As capacitors grown on InP(100) substrates. By means of the capacitance-voltage measurements, we demonstrated that samples do not have the same total oxide charge density depending on the cleaning solution used [(NH4)2S or NH4OH] prior to oxide deposition. The determination of the interface trap density revealed that a Fermi-level pinning occurs for samples grown by metalorganic chemical vapor deposition but not for similar samples grown by molecular beam epitaxy. Deep level transient spectroscopy analysis explained the Fermi-level pinning by an additional signal for samples grown by metalorganic chemical vapor deposition, attributed to the tunneling effect of carriers trapped in oxide toward interface states. This work emphasizes that the choice of appropriate oxide and cleaning treatment is not enough to prevent a Fermi-level pinning in III-V metal-oxide-semiconductor capacitors. The semiconductor growth technique needs to be taken into account because it impacts the trapping properties of the oxide.

Effect of mass density on surface morphology of electrodeposited manganese oxide films

Science.gov (United States)

Singh, Avtar; Kumar, Davinder; Thakur, Anup; Kaur, Raminder

2018-05-01

This work focus on high surface area morphology of manganese oxide films which are currently required for electrochemical capacitor electrode to enhance their performance. Electrodeposition of manganese oxide films was carried out using Chronoamperometry for different deposition time ranging from 30 to 120 sec. Cronoamperomertic I-T integrated data have been used to analyze active mass of all electrodeposited films. Morphological study of the deposited films with different mass was carried out through scanning electron microscopy. Film deposited for 30 sec time show highest porous morphology than others. Manganese oxide films with high porosity are suitable for electrochemical capacitor electrode.

Interfacial and electrical properties of HfAlO/GaSb metal-oxide-semiconductor capacitors with sulfur passivation

International Nuclear Information System (INIS)

Tan Zhen; Zhao Lian-Feng; Wang Jing; Xu Jun

2014-01-01

Interfacial and electrical properties of HfAlO/GaSb metal-oxide-semiconductor capacitors (MOSCAPs) with sulfur passivation were investigated and the chemical mechanisms of the sulfur passivation process were carefully studied. It was shown that the sulfur passivation treatment could reduce the interface trap density D it of the HfAlO/GaSb interface by 35% and reduce the equivalent oxide thickness (EOT) from 8 nm to 4 nm. The improved properties are due to the removal of the native oxide layer, as was proven by x-ray photoelectron spectroscopy measurements and high-resolution cross-sectional transmission electron microscopy (HRXTEM) results. It was also found that GaSb-based MOSCAPs with HfAlO gate dielectrics have interfacial properties superior to those using HfO 2 or Al 2 O 3 dielectric layers. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

Structural integrity of ceramic multilayer capacitor materials and ceramic multilayer capacitors

NARCIS (Netherlands)

With, de G.

1993-01-01

An review with 61 refs. is given of the fracture of and stress situation in ceramic capacitor materials and ceramic multilayer capacitors. A brief introduction to the relevant concepts is given first. Next the data for capacitor materials and the data for capacitors are discussed. The materials data

Leakage Current Degradation Due to Ion Drift and Diffusion in Tantalum and Niobium Oxide Capacitors

Directory of Open Access Journals (Sweden)

Kuparowitz Martin

2017-06-01

Full Text Available High temperature and high electric field applications in tantalum and niobium capacitors are limited by the mechanism of ion migration and field crystallization in a tantalum or niobium pentoxide insulating layer. The study of leakage current (DCL variation in time as a result of increasing temperature and electric field might provide information about the physical mechanism of degradation. The experiments were performed on tantalum and niobium oxide capacitors at temperatures of about 125°C and applied voltages ranging up to rated voltages of 35 V and 16 V for tantalum and niobium oxide capacitors, respectively. Homogeneous distribution of oxygen vacancies acting as positive ions within the pentoxide layer was assumed before the experiments. DCL vs. time characteristics at a fixed temperature have several phases. At the beginning of ageing the DCL increases exponentially with time. In this period ions in the insulating layer are being moved in the electric field by drift only. Due to that the concentration of ions near the cathode increases producing a positively charged region near the cathode. The electric field near the cathode increases and the potential barrier between the cathode and insulating layer decreases which results in increasing DCL. However, redistribution of positive ions in the insulator layer leads to creation of a ion concentration gradient which results in a gradual increase of the ion diffusion current in the direction opposite to the ion drift current component. The equilibrium between the two for a given temperature and electric field results in saturation of the leakage current value. DCL vs. time characteristics are described by the exponential stretched law. We found that during the initial part of ageing an exponent n = 1 applies. That corresponds to the ion drift motion only. After long-time application of the electric field at a high temperature the DCL vs. time characteristics are described by the exponential

Application of proton conducting polymeric electrolytes to electrochemical capacitors

International Nuclear Information System (INIS)

Morita, Masayuki; Qiao, Jin-Li; Yoshimoto, Nobuko; Ishikawa, Masashi

2004-01-01

Non-aqueous polymeric gel complexes composed of poly(ethylene oxide)-modified polymethacrylate (PEO-PMA) dissolving anhydrous H 3 PO 4 have been examined as solid electrolytes of electrochemical capacitors. High ionic conductivity of ∼10 -3 S cm -1 (at 70 deg. C) was obtained for non-aqueous gel systems based on PEO-PMA with proper amounts of organic plasticizers. The ionic conductivity depended on the composition of the gel, especially on the content of the dopant H 3 PO 4 . A test cell of the electric double layer capacitor (EDLC) was assembled using the present gel electrolyte with activated carbon fiber (ACF) cloth electrodes. It gave as high capacity as that obtained for the capacitor using an aqueous liquid electrolyte. High rate capability was obtained for the cell operating at 90 deg. C

Synthesis and characterization of a nanocomposite of goethite nanorods and reduced graphene oxide for electrochemical capacitors

International Nuclear Information System (INIS)

Shou Qingliang; Cheng Jipeng; Zhang Li; Nelson, Bradley J.; Zhang Xiaobin

2012-01-01

We report a one-step synthesis of a nanocomposite of goethite (α-FeOOH) nanorods and reduced graphene oxide (RGO) using a solution method in which ferrous cations serve as a reducing agent of graphite oxide (GO) to graphene and a precursor to grow goethite nanorods. As-prepared goethite nanorods have an average length of 200 nm and a diameter of 30 nm and are densely attached on both sides of the RGO sheets. The electrochemical properties of the nanocomposite were characterized by cyclic voltammetry (CV) and chronopotentiometry (CP) charge–discharge tests. The results showed that goethite/RGO composites have a high electrochemical capacitance of 165.5 F g −1 with an excellent recycling capability making the material promising for electrochemical capacitors. - Graphical abstract: The reduced graphene oxide sheets are decorated with goethite nanorods. The as-prepared composite exhibits a high electrochemical capacitance with good recycling capability, which is promising for supercapacitor applications. Higlights: ► Ferrous ions act as reductant of graphite oxide and precursor of goethite nanorods. ► Goethite nanorods are attached on both sides of the reduced graphene oxide sheets. ► Composite exhibits a high specific capacitance and a good recycling capability. ► Composite is promising for supercapacitor applications.

Superparamagnetic magnetite nanocrystals-graphene oxide nanocomposites: facile synthesis and their enhanced electric double-layer capacitor performance.

Science.gov (United States)

Wang, Qihua; Wang, Dewei; Li, Yuqi; Wang, Tingmei

2012-06-01

Superparamagnetic magnetite nanocrystals-graphene oxide (FGO) nanocomposites were successfully synthesized through a simple yet versatile one-step solution-processed approach at ambient conditions. Magnetite (Fe3O4) nanocrystals (NCs) with a size of 10-50 nm were uniformly deposited on the surfaces of graphene oxide (GO) sheets, which were confirmed by transmission electron microscopy (TEM) and high-angle annular dark field scanning transmission election microscopy (HAADF-STEM) studies. FGO with different Fe3O4 loadings could be controlled by simply manipulating the initial weight ratio of the precursors. The M-H measurements suggested that the as-prepared FGO nanocomposites have a large saturation magnetizations that made them can move regularly under an external magnetic field. Significantly, FGO nanocomposites also exhibit enhanced electric double-layer capacitor (EDLC) activity compared with pure Fe3O4 NCs and GO in terms of specific capacitance and high-rate charge-discharge.

Effects of electrodes on the properties of sol-gel PZT based capacitors in FeRAM

Science.gov (United States)

Zhang, Ming-Ming; Jia, Ze; Ren, Tian-Ling

2009-05-01

The effects of electrodes on the properties of capacitors applied in ferroelectric random access memories (FeRAM) are investigated in this work. Pt and Ir are used as bottom and top electrodes (BE and TE), respectively, in sol-gel Pb(Zr xTi 1-x)O 3 (PZT) based capacitors. Bottom electrodes are found to play a dominant role in the properties of PZT films and capacitors. Capacitors using Pt as bottom electrode have larger remnant polarization (2Pr) than those using Ir which may result from the different orientations of PZT films. The higher Schottky barrier, more dense film and smaller roughness are believed to be the reasons for the better leakage performance of capacitors using Pt as bottom electrodes. Different vacancies types and interface conditions are believed to be the main reasons for the better fatigue (less than 10% initial 2Pr loss after 10 11 fatigue cycles) and better imprint properties of TE/PZT/Ir capacitors. Top electrodes are found to have smaller impact on the properties of capacitors compared with bottom electrodes. A decrease in 2Pr is found when Ir is used as top electrode instead of Pt for PZT/Pt, which is believed to be caused by the stress resulting from lattice mismatch. The different thermal processes that top and bottom electrodes suffered are believed to be the reason for the different impacts they have on capacitors.

Characteristics of Au/PZT/TiO2/Nitride/Si structure capacitors with ICP nitride treatments

International Nuclear Information System (INIS)

Min, Hyung Seob; Kim, Tae Ho; Jeon, Chang Bae; Lee, Jae Gab; Kim, Ji Young

2002-01-01

In this study, the characteristics of PZT/TiO 2 ferroelectric gate stack capacitors with Inductively Coupled Plasma (ICP) nitridation were investigated for field effect transistor (FET)-type Ferroelectric Random Access Memory (FeRAM) applications. If a high accumulation capacitance is to be had, the ICP nitridation time needs to be optimized. While a short ICP treatment time results in thermal oxide growth due to lack of nitrogen, a long nitridation time causes a nitride layer which is too thick. Au/PZT(200 nm)/TiO 2 (40 nm)/Nitride/Si (MeFINS) structure capacitors show a memory window (ΔV) of 1.6 V under ±3-V operation while Au/PZT(200 nm)/TiO 2 (40 nm)/Si (MeFIS) capacitors without nitride treatment exhibit a small memory window of 0.6 V. At the same time, the capacitance of the MeFINS device is almost twice that of the MeFIS capacitor. This result implies that the ICP nitride treatment suppresses the formation of a low dielectric constant interfacial SiO x layer and alleviates the series capacitance problem

High permittivity materials for oxide gate stack in Ge-based metal oxide semiconductor capacitors

Energy Technology Data Exchange (ETDEWEB)

Molle, Alessandro, E-mail: alessandro.molle@mdm.infm.i [Laboratorio Nazionale MDM, CNR-INFM, via C. Olivetti 2, 20041 Agrate Brianza, Milano (Italy); Baldovino, Silvia [Laboratorio Nazionale MDM, CNR-INFM, via C. Olivetti 2, 20041 Agrate Brianza, Milano (Italy); Dipartimento di Scienza dei Materiali, Universita degli Studi di Milano Bicocca, Milano (Italy); Spiga, Sabina [Laboratorio Nazionale MDM, CNR-INFM, via C. Olivetti 2, 20041 Agrate Brianza, Milano (Italy); Fanciulli, Marco [Laboratorio Nazionale MDM, CNR-INFM, via C. Olivetti 2, 20041 Agrate Brianza, Milano (Italy); Dipartimento di Scienza dei Materiali, Universita degli Studi di Milano Bicocca, Milano (Italy)

2010-01-01

In the effort to ultimately shrink the size of logic devices towards a post-Si era, the integration of Ge as alternative channel material for high-speed p-MOSFET devices and the concomitant coupling with high permittivity dielectrics (high-k) as gate oxides is currently a key-challenge in microelectronics. However, the Ge option still suffers from a number of unresolved drawbacks and open issues mainly related to the thermodynamic and electrical compatibility of Ge substrates with high-k gate stack. Strictly speaking, two main concerns can be emphasized. On one side is the dilemma on which chemical/physical passivation is more suitable to minimize the unavoidable presence of electrically active defects at the oxide/semiconductor interface. On the other side, overcoming the SiO{sub 2} gate stack opens the route to a number of potentially outperforming high-k oxides. Two deposition approaches were here separately adopted to investigate the high-k oxide growth on Ge substrates, the molecular beam deposition (MBD) of Gd{sub 2}O{sub 3} and the atomic layer deposition (ALD) of HfO{sub 2}. In the MBD framework epitaxial and amorphous Gd{sub 2}O{sub 3} films were grown onto GeO{sub 2}-passivated Ge substrates. In this case, Ge passivation was achieved by exploiting the Ge{sup 4+} bonding state in GeO{sub 2} ultra-thin interface layers intentionally deposited in between Ge and the high-k oxide by means of atomic oxygen exposure to Ge. The composition of the interface layer has been characterized as a function of the oxidation temperature and evidence of Ge dangling bonds at the GeO{sub 2}/Ge interface has been reported. Finally, the electrical response of MOS capacitors incorporating Gd{sub 2}O{sub 3} and GeO{sub 2}-passivated Ge substrates has been checked by capacitance-voltage measurements. On the other hand, the structural and electrical properties of HfO{sub 2} films grown by ALD on Ge by using different oxygen precursors, i.e. H{sub 2}O, Hf(O{sup t}Bu){sub 2}(mmp

Self-discharge of AC/AC electrochemical capacitors in salt aqueous electrolyte

International Nuclear Information System (INIS)

García-Cruz, L.; Ratajczak, P.; Iniesta, J.; Montiel, V.; Béguin, F.

2016-01-01

The self-discharge (SD) of electrochemical capacitors based on activated carbon electrodes (AC/AC capacitors) in aqueous lithium sulfate was examined after applying a three-hour cell potential hold at U i values from 1.0 to 1.6 V. The leakage current measured during the potentiostatic period as well as the amplitude of self-discharge increased with U i ; the cell potential drop was approximately doubled by 10 °C increase of temperature. The potential decay of both negative and positive electrodes was explored separately, by introducing a reference electrode and it was found that the negative electrode contributes essentially to the capacitor self-discharge. A diffusion-controlled mechanism was found at U i ≤ 1.4 V and U i ≤ 1.2 V for the positive and negative electrodes, respectively. At higher U i of 1.6 V, both electrodes display an activation-controlled mechanism due to water oxidation and subsequent carbon oxidation at the positive electrode and water or oxygen reduction at the negative electrode.

Graphene oxide-MnO2 nanocomposite for supercapacitor application

Science.gov (United States)

Muhammed Shafi, P.; Vishal, Jose K.; Chandra Bose, A.

2016-09-01

Increased depletion of fossil fuels along with global warming and climate change made the society to think about alternate green and sustainable energy sources and better energy storage devices. Extensive research has been performed on the development of solar cells, fuel cells, Lithium- ion battery and supercapacitors to combat the green house effect and its consequences, and to meet the increased energy crisis. Supercapacitors, also known as electrochemical capacitors are gained a great attention because of their pulse power supply, long cycle life (>100,000), simple principle and high dynamic of charge propagation. Its greater power density than lithium- ion battery and much larger energy density than conventional capacitors brought super capacitors to a promising energy storage device to meet the increased energy demands. Here we demonstrate supercapacitor electrode materials with graphene oxide (electric double layer capacitor) and α-MnO2 nanomaterial (pseudo-capacitor), as well as composite of these materials, which means that the bulk of the material undergoes a fast redox reaction to provide the capacitive response and they exhibit superior specific energies in addition to the carbon-based supercapacitors (double-layer capacitors). A simple soft chemical route is utilized to synthesize graphene oxide, α-MnO2 and graphene oxide-MnO2 composite. The phase and the structure of the synthesized materials are studied using X-ray diffractometry (XRD). The functional group and the presence of impurities are understood from Fourier transform infrared (FTIR) spectra. The capacitive properties of the graphene oxide, graphene oxide - MnO2 nanocomposite and α-MnO2 are tested with the help of cyclic voltammetry (CV) and galvanostatic charge - discharge techniques using 1 M Na2SO4 in aqueous solution as electrolyte. It was found that graphene oxide - MnO2 nanocomposite shows better electrochemical behaviour compared to individual graphene oxide and α-MnO2 nanomaterial.

Graphene/VO2 hybrid material for high performance electrochemical capacitor

International Nuclear Information System (INIS)

Deng, Lingjuan; Zhang, Gaini; Kang, Liping; Lei, Zhibin; Liu, Chunling; Liu, Zong-Huai

2013-01-01

Graphical abstract: Graphene/VO 2 hybrid materials are prepared by one-step simultaneous hydrothermal reduction technology. The prepared graphene (1.0)/VO 2 hybrid material shows a specific capacitances of 225 F g −1 in 0.5 mol L −1 K 2 SO 4 solution. Furthermore, an asymmetric electrochemical capacitor with graphene (1.0)/VO 2 as a positive electrode and graphene as a negative electrode is assembled, and it can work in a cell voltage of 1.7 V and show excellent capacitive property. - Highlights: • Graphene/VO 2 hybrid material has been prepared by one-step hydrothermal reduction. • Graphene/VO 2 hybrid material exhibits high specific capacitance. • An asymmetric capacitor working at 1.7 V in aqueous solution is assembled based on graphene/VO 2 electrode. • The asymmetric capacitor exhibits high energy density. - Abstract: Vanadium oxides have attracted significant attention for electrochemical capacitor because of their extensive multifunctional properties. In the present work, graphene/VO 2 (RG/VO 2 ) hybrid materials with different RG amounts are prepared in a mixture of ammonium vanadate, formic acid and graphite oxide (GO) nanosheets by one-step simultaneous hydrothermal reduction technology. The hydrothermal treatment makes the reduction of GO into RG and the formation of VO 2 particles with starfruit morphology. The starfruit-like VO 2 particles are uniformly embedded in the hole constructed by RG nanosheets, which makes the electrode–electrolyte contact better. A high specific capacitance of 225 F g −1 has been achieved for RG(1.0)/VO 2 electrode with RG content of 26 wt% in 0.5 mol L −1 K 2 SO 4 electrolyte. An asymmetrical electrochemical capacitor is assembled by using RG(1.0)/VO 2 as positive electrode and RG as negative electrode, and it can be reversibly charged–discharged at a cell voltage of 1.7 V in 0.5 mol L −1 K 2 SO 4 electrolyte. The asymmetrical capacitor can deliver an energy density of 22.8 Wh kg −1 at a power density

Capacitor performance limitations in high power converter applications

DEFF Research Database (Denmark)

El-Khatib, Walid Ziad; Holbøll, Joachim; Rasmussen, Tonny Wederberg

2013-01-01

High voltage low inductance capacitors are used in converters as HVDC-links, snubber circuits and sub model (MMC) capacitances. They facilitate the possibility of large peak currents under high frequent or transient voltage applications. On the other hand, using capacitors with larger equivalent...... series inductances include the risk of transient overvoltages, with a negative effect on life time and reliability of the capacitors. These allowable limits of such current and voltage peaks are decided by the ability of the converter components, including the capacitors, to withstand them over...... the expected life time. In this paper results are described from investigations on the electrical environment of these capacitors, including all the conditions they would be exposed to, thereby trying to find the tradeoffs needed to find a suitable capacitor. Different types of capacitors with the same voltage...

Degradation Effect on Reliability Evaluation of Aluminum Electrolytic Capacitor in Backup Power Converter

DEFF Research Database (Denmark)

Zhou, Dao; Wang, Huai; Blaabjerg, Frede

2017-01-01

DC capacitors in power electronic converters are a major constraint on improvement of power density as well as reliability. In this paper, according to the degradation data of electrolytic capacitors through the accelerated test, the time-to-failure of the capacitor cell is acquired and it can...... be further extended to lower stress levels. Then, in a case study of a fuel cell backup power application, the mission profile based lifetime expectancy of the individual capacitor and the capacitor bank is estimated in terms of the standby mode and operation mode. The lifetime prediction of the capacitor...

Electrically tuned super-capacitors

OpenAIRE

Chowdhury, Tazima S.; Grebel, Haim

2015-01-01

Fast charging and discharging of large amounts of electrical energy make super-capacitors ideal for short-term energy storage [1-5]. In its simplest form, the super-capacitor is an electrolytic capacitor made of an anode and a cathode immersed in an electrolyte. As for an ordinary capacitor, minimizing the charge separation distance and increasing the electrode area increase capacitance. In super-capacitors, charge separation is of nano-meter scale at each of the electrode interface (the Helm...

Enhanced interfacial and electrical characteristics of 4H-SiC MOS capacitor with lanthanum silicate passivation interlayer

International Nuclear Information System (INIS)

Wang, Qian; Cheng, Xinhong; Zheng, Li; Ye, Peiyi; Li, Menglu; Shen, Lingyan; Li, Jingjie; Zhang, Dongliang; Gu, Ziyue; Yu, Yuehui

2017-01-01

Highlights: • The 4H-SiC MOS capacitor with an untra-thin LaSiO_x passivation layer and Al_2O_3 gate dielectric was fabricated. • The detrimental SiO_x interfacial layer could be effectively restrained by the LaSiO_x passivation layer. • The passivation mechanism of LaSiO_x was analyzed by HRTEM, XPS and electrical measurements. • The 4H-SiC MOS capacitor with a LaSiO_x passivation layer shows excellent device characteristics. • This technique provides an efficient path to improve dielectrics/4H-SiC interfaces for future high-power device applications. - Abstract: The detrimental sub-oxide (SiO_x) interfacial layer formed during the 4H-SiC metal-oxide-semiconductor (MOS) capacitor fabrication will drastically damage its device performance. In this work, an ultrathin lanthanum silicate (LaSiO_x) passivation layer was introduced to enhance the interfacial and electrical characteristics of 4H-SiC MOS capacitor with Al_2O_3 gate dielectric. The interfacial LaSiO_x formation was investigated by high resolution transmission electron microscopy and X-ray photoelectron spectroscopy. The 4H-SiC MOS capacitor with ultrathin LaSiO_x passivation interlayer shows excellent interfacial and electrical characteristics, including lower leakage current density, higher dielectric breakdown electric field, smaller C–V hysteresis, and lower interface states density and border traps density. The involved mechanism implies that the LaSiO_x passivation interlayer can effectively restrain SiO_x formation and improve the Al_2O_3/4H-SiC interface quality. This technique provides an efficient path to improve dielectrics/4H-SiC interfaces for future high-power device applications.

Enhanced interfacial and electrical characteristics of 4H-SiC MOS capacitor with lanthanum silicate passivation interlayer

Energy Technology Data Exchange (ETDEWEB)

Wang, Qian [State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-system & Information Technology, Chinese Academy of Sciences, Changning Road 865, Shanghai 200050 (China); University of Chinese Academy of Sciences, Beijing 100049 (China); Cheng, Xinhong, E-mail: xh_cheng@mail.sim.ac.cn [State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-system & Information Technology, Chinese Academy of Sciences, Changning Road 865, Shanghai 200050 (China); Zheng, Li, E-mail: zhengli@mail.sim.ac.cn [State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-system & Information Technology, Chinese Academy of Sciences, Changning Road 865, Shanghai 200050 (China); University of Chinese Academy of Sciences, Beijing 100049 (China); Ye, Peiyi; Li, Menglu [Department of Materials Science and Engineering, University of California, Los Angeles, CA 90095 (United States); Shen, Lingyan; Li, Jingjie; Zhang, Dongliang; Gu, Ziyue [State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-system & Information Technology, Chinese Academy of Sciences, Changning Road 865, Shanghai 200050 (China); University of Chinese Academy of Sciences, Beijing 100049 (China); Yu, Yuehui [State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-system & Information Technology, Chinese Academy of Sciences, Changning Road 865, Shanghai 200050 (China)

2017-07-15

Highlights: • The 4H-SiC MOS capacitor with an untra-thin LaSiO{sub x} passivation layer and Al{sub 2}O{sub 3} gate dielectric was fabricated. • The detrimental SiO{sub x} interfacial layer could be effectively restrained by the LaSiO{sub x} passivation layer. • The passivation mechanism of LaSiO{sub x} was analyzed by HRTEM, XPS and electrical measurements. • The 4H-SiC MOS capacitor with a LaSiO{sub x} passivation layer shows excellent device characteristics. • This technique provides an efficient path to improve dielectrics/4H-SiC interfaces for future high-power device applications. - Abstract: The detrimental sub-oxide (SiO{sub x}) interfacial layer formed during the 4H-SiC metal-oxide-semiconductor (MOS) capacitor fabrication will drastically damage its device performance. In this work, an ultrathin lanthanum silicate (LaSiO{sub x}) passivation layer was introduced to enhance the interfacial and electrical characteristics of 4H-SiC MOS capacitor with Al{sub 2}O{sub 3} gate dielectric. The interfacial LaSiO{sub x} formation was investigated by high resolution transmission electron microscopy and X-ray photoelectron spectroscopy. The 4H-SiC MOS capacitor with ultrathin LaSiO{sub x} passivation interlayer shows excellent interfacial and electrical characteristics, including lower leakage current density, higher dielectric breakdown electric field, smaller C–V hysteresis, and lower interface states density and border traps density. The involved mechanism implies that the LaSiO{sub x} passivation interlayer can effectively restrain SiO{sub x} formation and improve the Al{sub 2}O{sub 3}/4H-SiC interface quality. This technique provides an efficient path to improve dielectrics/4H-SiC interfaces for future high-power device applications.

Irradiation response of radio-frequency sputtered Al/Gd2O3/p-Si MOS capacitors

Science.gov (United States)

Kahraman, A.; Yilmaz, E.

2017-10-01

The usage of the Gadolinium oxide (Gd2O3) as sensitive region in the MOS (Metal-Oxide-Semiconductor)-based dosimeters was investigated in the presented study. The Gd2O3 films grown on p-type Si (100) by RF magnetron sputtering were annealed at 800 °C under N2 ambient. The back and front metal contacts were establishes to produce MOS capacitors. The fabricated Gd2O3 MOS capacitors were irradiated in the dose range 0.5-50 Gy by 60Co gamma source. The performed Capacitance-Voltage (C-V) curves of the Gd2O3 MOS capacitors shifted to right side relative to pre-irradiation one. While continuous increments in the oxide trapped charges with increasing in gamma dose were observed, interface trapped charges fluctuated in the studied dose range. However, the variation of the interface trapped charge densities was found in the order of 1011 cm-2 and no significant variation was observed with applied dose. These results confirm that a significant deterioration does not occur in the capacitance during the irradiation. The higher oxide trapped charges compared to interface trapped charges showed that these traps were more responsible for the shift of the C-V curves. The sensitivity and percentage fading after 105 min of the Gd2O3 MOS capacitor were found as 39.7±1.4 mV/Gy and 14.5%, respectively. The devices sensitivity was found to be higher than that of capacitors composed of Er2O3, Sm2O3, La2O3, Al2O3, and SiO2, but, the high fading values is seen as a major problem for these capacitors. Finally, the barrier height was investigated with gamma exposure and the results showed that its value increased with increasing in radiation dose due to possible presence of the acceptor-like interface states.

Deep electron traps in HfO_2-based metal-oxide-semiconductor capacitors

International Nuclear Information System (INIS)

Salomone, L. Sambuco; Lipovetzky, J.; Carbonetto, S.H.; García Inza, M.A.; Redin, E.G.; Campabadal, F.

2016-01-01

Hafnium oxide (HfO_2) is currently considered to be a good candidate to take part as a component in charge-trapping nonvolatile memories. In this work, the electric field and time dependences of the electron trapping/detrapping processes are studied through a constant capacitance voltage transient technique on metal-oxide-semiconductor capacitors with atomic layer deposited HfO_2 as insulating layer. A tunneling-based model is proposed to reproduce the experimental results, obtaining fair agreement between experiments and simulations. From the fitting procedure, a band of defects is identified, located in the first 1.7 nm from the Si/HfO_2 interface at an energy level E_t = 1.59 eV below the HfO_2 conduction band edge with density N_t = 1.36 × 10"1"9 cm"−"3. A simplified analytical version of the model is proposed in order to ease the fitting procedure for the low applied voltage case considered in this work. - Highlights: • We characterized deep electron trapping/detrapping in HfO_2 structures. • We modeled the experimental results through a tunneling-based model. • We obtained an electron trap energy level of 1.59 eV below conduction band edge. • We obtained a spatial trap distribution extending 1.7 nm within the insulator. • A simplified tunneling front model is able to reproduce the experimental results.

Split-phase motor running as capacitor starts motor and as capacitor run motor

OpenAIRE

Yahaya Asizehi ENESI; Jacob TSADO; Mark NWOHU; Usman Abraham USMAN; Odu Ayo IMORU

2016-01-01

In this paper, the input parameters of a single phase split-phase induction motor is taken to investigate and to study the output performance characteristics of capacitor start and capacitor run induction motor. The value of these input parameters are used in the design characteristics of capacitor run and capacitor start motor with each motor connected to rated or standard capacitor in series with auxiliary winding or starting winding respectively for the normal operational condition. The ma...

Evaluation of gamma and neutron irradiation effects on the properties of mica film capacitors

International Nuclear Information System (INIS)

Roy, Rajesh; Pandya, Arun

2005-01-01

We present an investigation of gamma and neutron radiation effects on mica film capacitors from an electrical point of view. We have studied quantitatively the effects of gamma and neutron irradiation on mica film capacitors of thickness, 20 and 40 μm (0.7874 and 1.5748 mil) with two different areas, 01 and 04 cm 2 . The capacitance has been measured at room temperature in the frequency range 100 Hz-10 MHz. Negligible change in the capacitance due to high gamma dose of 60 Co, 15 kGy at dose rate 0.25 kGy/h, has been observed. However, appreciable change in the capacitance has been observed due to low doses of fast neutrons (cumulative dose, 115 cGy) with flux ∼ 9.925 X 10 7 neutrons/cm 2 h from 252 Cf neutron source of fluence, 2.5 x 10 7 neutrons/s. We have also observed that the impact of gamma and neutron irradiation is more at frequencies higher than 10 kHz, These results show that the mica capacitors do not show any radiation response below 10 kHz. The study shows the radiation response of mica film capacitors to gamma and fast neutron radiations. Mica capacitors show low gamma radiation response in comparison to fast neutron radiation, because a total dose of kGy order has been given by gamma source and only few cGy dose has been given by fast neutron source. (author)

Graphene hydrogels deposited in nickel foams for high-rate electrochemical capacitors.

Science.gov (United States)

Chen, Ji; Sheng, Kaixuan; Luo, Peihui; Li, Chun; Shi, Gaoquan

2012-08-28

Graphene hydrogel/nickel foam composite electrodes for high-rate electrochemical capacitors are produced by reduction of an aqueous dispersion of graphene oxide in a nickel foam (upper half of figure). The micropores of the hydrogel are exposed to the electrolyte so that ions can enter and form electrochemical double-layers. The nickel framework shortens the distances of charge transfer. Therefore, the electrochemical capacitor exhibits highrate performance (see plots). Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Effect of interfacial layers on dielectric properties in very thin SrBi2Ta2O9 capacitors

International Nuclear Information System (INIS)

Moon, Bum-Ki; Isobe, Chiharu; Hironaka, Katsuyuki; Hishikawa, Shinichi

2001-01-01

The effect of interfacial layers on the dielectric properties in very thin SrBi 2 Ta 2 O 9 (SBT) capacitors has been investigated using static measurements. Total permittivity (ε t ) decreased as the film thickness was reduced in both Pt/SBT/Pt and Ir/SBT/Pt capacitors. The contribution of the interfacial capacitance (C int ) and bulk capacitance to the total capacitance indicates that C int of the Ir/SBT/Pt structure was lower than that of the Pt/SBT/Pt structure, while the bulk permittivity (ε b ) was essentially the same. The dispersion of all capacitors followed the power law, while the Ir/SBT/Pt capacitor showed a larger dispersion of C int . These results suggest that the Pt/SBT/Pt capacitor is preferred for obtaining the high performance with less effect of the interfacial layers on the dielectric properties. [copyright] 2001 American Institute of Physics

Efficiency Improvement of Capacitor Operation

Directory of Open Access Journals (Sweden)

V. P. Kashcheev

2010-01-01

Full Text Available A system of modernized capacitor ball-cleaning that prevents formation of depositions on internal capacitor tube surface has been developed in the paper.The system has been introduced at the Minsk TPP-4 (Power Block No.5. The paper presupposes that the economic effect will be nearly 0.43 million US dollars per year at one poer block with turbine Т-250/300-240.

Microscale electrostatic fractional capacitors using reduced graphene oxide percolated polymer composites

KAUST Repository

Elshurafa, Amro M.; Almadhoun, Mahmoud Nassar Mahmoud; Alshareef, Husam N.; Salama, Khaled N.

2013-01-01

be controllably tuned from −67° to −31°, respectively. The electrostatic fractional capacitors proposed herein are easy to fabricate and offer integration capability on electronic printed circuit boards.

Vented Capacitor

Science.gov (United States)

Brubaker, Michael Allen; Hosking, Terry Alan

2006-04-11

A technique of increasing the corona inception voltage (CIV), and thereby increasing the operating voltage, of film/foil capacitors is described. Intentional venting of the capacitor encapsulation improves the corona inception voltage by allowing internal voids to equilibrate with the ambient environment.

Dispersive dielectric and conductive effects in 2D resistor-capacitor networks.

Science.gov (United States)

Hamou, R F; Macdonald, J R; Tuncer, E

2009-01-14

How to predict and better understand the effective properties of disordered material mixtures has been a long-standing problem in different research fields, especially in condensed matter physics. In order to address this subject and achieve a better understanding of the frequency-dependent properties of these systems, a large 2D L × L square structure of resistors and capacitors was used to calculate the immittance response of a network formed by random filling of binary conductor/insulator phases with 1000 Ω resistors and 10 nF capacitors. The effects of percolating clusters on the immittance response were studied statistically through the generation of 10 000 different random network samples at the percolation threshold. The scattering of the imaginary part of the immittance near the dc limit shows a clear separation between the responses of percolating and non-percolating samples, with the gap between their distributions dependent on both network size and applied frequency. These results could be used to monitor connectivity in composite materials. The effects of the content and structure of the percolating path on the nature of the observed dispersion were investigated, with special attention paid to the geometrical fractal concept of the backbone and its influence on the behavior of relaxation-time distributions. For three different resistor-capacitor proportions, the appropriateness of many fitting models was investigated for modeling and analyzing individual resistor-capacitor network dispersed frequency responses using complex-nonlinear-least-squares fitting. Several remarkable new features were identified, including a useful duality relationship and the need for composite fitting models rather than either a simple power law or a single Davidson-Cole one. Good fits of data for fully percolating random networks required two dispersive fitting models in parallel or series, with a cutoff at short times of the distribution of relaxation times of one of

Dielectric material in lead-based perovskite and fabrication process for multilayer ceramic capacitor with copper internal electrode

International Nuclear Information System (INIS)

Kato, J.; Yokotani, Y.; Kagata, H.; Nakatani, S.; Kugimiya, K.

1990-01-01

This paper reports on the development of a multilayer ceramic capacitor with copper internal electrodes. Dielectric materials of the capacitor is lead- based perovskite (Pb a Ca b ) (Mg 1/3 Nb 2/3 ) x Ti y (Ni 1/2 W 1/2 ) z O 2 + a + b where a + b gt 1 and x + y + z = 1. The materials can be fired below 1000 degrees C and have high resistivity even when fired in the atmosphere below the equilibrium oxygen partial pressure of copper and CuO. The fabrication process of the capacitor has following features. The electrode paste is composed of copper oxide to prevent breaking of the laminated body in a burn out process. Then the copper oxide is first metalized and fired in a controlled atmosphere. The obtained capacitor of 20 dielectric layers of 17 micron meter meets to Z5U specification and has low loss tangent of 0.6% and stability under d.c. bias voltage and high a.c. field

Imprint and oxygen deficiency in (Pb,La)(Zr,Ti)O3 thin-film capacitors with La-Sr-Co-O electrodes

International Nuclear Information System (INIS)

Lee, J.; Ramesh, R.; Keramidas, V.G.; Warren, W.L.; Pike, G.E.; Evans, J.T. Jr.

1995-01-01

La-Sr-Co-O/Pb-La-Zr-Ti-O/La-Sr-Co-O thin-film capacitors have been grown in various oxygen ambients by pulsed laser deposition. As the oxygen ambient became more reducing, the capacitors developed more voltage asymmetry in hysteresis loops and a more preferred polarization state directed towards the top electrode. PLZT capacitors cooled in a fully oxidizing atmosphere (i.e., 1 atm oxygen pressure) exhibited nominally symmetric hysteresis loops and also showed little imprint both with and without fully saturating bias fields. We find that ambient oxygen pressure is an important process parameter and the imprint behavior is closely related with ambient oxygen induced effects such as oxygen vacancies, its related defect-dipole complexes and trapping of free charges. The different imprint behavior under negative and positive bias also suggests that the dipolar-defect complexes tend to cause imprint in PLZT capacitors

Boron cross-linked graphene oxide/polyvinyl alcohol nanocomposite gel electrolyte for flexible solid-state electric double layer capacitor with high performance

International Nuclear Information System (INIS)

Huang, Yi-Fu; Wu, Peng-Fei; Zhang, Ming-Qiu; Ruan, Wen-Hong; Giannelis, Emmanuel P.

2014-01-01

Highlights: • Gel electrolyte is prepared and used in electric double layer capacitor. • Insertion of boron crosslinks into GO agglomerates opens channels for ion migration. • Solid supercapacitors show excellent specific capacitance and cycle stability. • Nanocomposite electrolyte shows better thermal stability and mechanical properties. - Abstract: A new family of boron cross-linked graphene oxide/polyvinyl alcohol (GO-B-PVA) nanocomposite gels is prepared by freeze-thaw/boron cross-linking method. Then the gel electrolytes saturated with KOH solution are assembled into electric double layer capacitors (EDLCs). Structure, thermal and mechanical properties of GO-B-PVA are explored. The electrochemical properties of EDLCs using GO-B-PVA/KOH are investigated, and compared with those using GO-PVA/KOH gel or KOH solution electrolyte. FTIR shows that boron cross-links are introduced into GO-PVA, while the boronic structure inserted into agglomerated GO sheets is demonstrated by DMA analysis. The synergy effect of the GO and the boron crosslinking benefits for ionic conductivity due to unblocking ion channels, and for improvement of thermal stability and mechanical properties of the electrolytes. Higher specific capacitance and better cycle stability of EDLCs are obtained by using the GO-B-PVA/KOH electrolyte, especially the one at higher GO content. The nanocomposite gel electrolytes with excellent electrochemical properties and solid-like character are candidates for the industrial application in high-performance flexible solid-state EDLCs

Side-gate modulation effects on high-quality BN-Graphene-BN nanoribbon capacitors

International Nuclear Information System (INIS)

Wang, Yang; Chen, Xiaolong; Ye, Weiguang; Wu, Zefei; Han, Yu; Han, Tianyi; He, Yuheng; Cai, Yuan; Wang, Ning

2014-01-01

High-quality BN-Graphene-BN nanoribbon capacitors with double side-gates of graphene have been experimentally realized. The double side-gates can effectively modulate the electronic properties of graphene nanoribbon capacitors. By applying anti-symmetric side-gate voltages, we observed significant upward shifting and flattening of the V-shaped capacitance curve near the charge neutrality point. Symmetric side-gate voltages, however, only resulted in tilted upward shifting along the opposite direction of applied gate voltages. These modulation effects followed the behavior of graphene nanoribbons predicted theoretically for metallic side-gate modulation. The negative quantum capacitance phenomenon predicted by numerical simulations for graphene nanoribbons modulated by graphene side-gates was not observed, possibly due to the weakened interactions between the graphene nanoribbon and side-gate electrodes caused by the Ga + beam etching process

Transition of hydrated oxide layer for aluminum electrolytic capacitors

International Nuclear Information System (INIS)

Chi, Choong-Soo; Jeong, Yongsoo; Ahn, Hong-Joo; Lee, Jong-Ho; Kim, Jung-Gu; Lee, Jun-Hee; Jang, Kyung-Wook; Oh, Han-Jun

2007-01-01

A hydrous oxide film for the application as dielectric film is synthesized by immersion of pure aluminum in hot water. From a Rutherford backscattering analysis, the ratio of aluminum to oxygen atoms was found to be 3:2 in the anodized aluminum oxide film, and 2:1 in the hydrous oxide layer. Anodization of the hydrous oxide layer was more effective for the transition of amorphous anodic oxides to the crystalline aluminum oxides

Capacitor assembly and related method of forming

Science.gov (United States)

Zhang, Lili; Tan, Daniel Qi; Sullivan, Jeffrey S.

2017-12-19

A capacitor assembly is disclosed. The capacitor assembly includes a housing. The capacitor assembly further includes a plurality of capacitors disposed within the housing. Furthermore, the capacitor assembly includes a thermally conductive article disposed about at least a portion of a capacitor body of the capacitors, and in thermal contact with the capacitor body. Moreover, the capacitor assembly also includes a heat sink disposed within the housing and in thermal contact with at least a portion of the housing and the thermally conductive article such that the heat sink is configured to remove heat from the capacitor in a radial direction of the capacitor assembly. Further, a method of forming the capacitor assembly is also presented.

Dielectric capacitors with three-dimensional nanoscale interdigital electrodes for energy storage.

Science.gov (United States)

Han, Fangming; Meng, Guowen; Zhou, Fei; Song, Li; Li, Xinhua; Hu, Xiaoye; Zhu, Xiaoguang; Wu, Bing; Wei, Bingqing

2015-10-01

Dielectric capacitors are promising candidates for high-performance energy storage systems due to their high power density and increasing energy density. However, the traditional approach strategies to enhance the performance of dielectric capacitors cannot simultaneously achieve large capacitance and high breakdown voltage. We demonstrate that such limitations can be overcome by using a completely new three-dimensional (3D) nanoarchitectural electrode design. First, we fabricate a unique nanoporous anodic aluminum oxide (AAO) membrane with two sets of interdigitated and isolated straight nanopores opening toward opposite planar surfaces. By depositing carbon nanotubes in both sets of pores inside the AAO membrane, the new dielectric capacitor with 3D nanoscale interdigital electrodes is simply realized. In our new capacitors, the large specific surface area of AAO can provide large capacitance, whereas uniform pore walls and hemispheric barrier layers can enhance breakdown voltage. As a result, a high energy density of 2 Wh/kg, which is close to the value of a supercapacitor, can be achieved, showing promising potential in high-density electrical energy storage for various applications.

Physics Based Modeling and Prognostics of Electrolytic Capacitors

Science.gov (United States)

Kulkarni, Chetan; Ceyla, Jose R.; Biswas, Gautam; Goebel, Kai

2012-01-01

This paper proposes first principles based modeling and prognostics approach for electrolytic capacitors. Electrolytic capacitors have become critical components in electronics systems in aeronautics and other domains. Degradations and faults in DC-DC converter unit propagates to the GPS and navigation subsystems and affects the overall solution. Capacitors and MOSFETs are the two major components, which cause degradations and failures in DC-DC converters. This type of capacitors are known for its low reliability and frequent breakdown on critical systems like power supplies of avionics equipment and electrical drivers of electromechanical actuators of control surfaces. Some of the more prevalent fault effects, such as a ripple voltage surge at the power supply output can cause glitches in the GPS position and velocity output, and this, in turn, if not corrected will propagate and distort the navigation solution. In this work, we study the effects of accelerated aging due to thermal stress on different sets of capacitors under different conditions. Our focus is on deriving first principles degradation models for thermal stress conditions. Data collected from simultaneous experiments are used to validate the desired models. Our overall goal is to derive accurate models of capacitor degradation, and use them to predict performance changes in DC-DC converters.

High-performance hybrid (electrostatic double-layer and faradaic capacitor-based) polymer actuators incorporating nickel oxide and vapor-grown carbon nanofibers.

Science.gov (United States)

Terasawa, Naohiro; Asaka, Kinji

2014-12-02

The electrochemical and electromechanical properties of polymeric actuators prepared using nickel peroxide hydrate (NiO2·xH2O) or nickel peroxide anhydride (NiO2)/vapor-grown carbon nanofibers (VGCF)/ionic liquid (IL) electrodes were compared with actuators prepared using solely VGCFs or single-walled carbon nanotubes (SWCNTs) and an IL. The electrode in these actuator systems is equivalent to an electrochemical capacitor (EC) exhibiting both electrostatic double-layer capacitor (EDLC)- and faradaic capacitor (FC)-like behaviors. The capacitance of the metal oxide (NiO2·xH2O or NiO2)/VGCF/IL electrode is primarily attributable to the EDLC mechanism such that, at low frequencies, the strains exhibited by the NiO2·xH2O/VGCF/IL and NiO2/VGCF/IL actuators primarily result from the FC mechanism. The VGCFs in the NiO2·xH2O/VGCF/IL and NiO2/VGCF/IL actuators strengthen the EDLC mechanism and increase the electroconductivity of the devices. The mechanism underlying the functioning of the NiO2·xH2O/VGCF/IL actuator in which NiO2·xH2O/VGCF = 1.0 was found to be different from that of the devices produced using solely VGCFs or SWCNTs, which exhibited only the EDLC mechanism. In addition, it was found that both NiO2 and VGCFs are essential with regard to producing actuators that are capable of exhibiting strain levels greater than those of SWCNT-based polymer actuators and are thus suitable for practical applications. Furthermore, the frequency dependence of the displacement responses of the NiO2·xH2O/VGCF and NiO2/VGCF polymer actuators were successfully simulated using a double-layer charging kinetic model. This model, which accounted for the oxidization and reduction reactions of the metal oxide, can also be applied to SWCNT-based actuators. The results of electromechanical response simulations for the NiO2·xH2O/VGCF and NiO2/VGCF actuators predicted the strains at low frequencies as well as the time constants of the devices, confirming that the model is applicable

Effects of wet-ROA on shallow interface traps of n-type 4H-SiC MOS capacitors

International Nuclear Information System (INIS)

Zhu Qiaozhi; Wang Dejun

2014-01-01

The effects of wet re-oxidation annealing (wet-ROA) on the shallow interface traps of n-type 4H-SiC metal—oxide—semiconductor (MOS) capacitors were investigated by Gray—Brown method and angle-dependent X-ray photoelectron spectroscopy technique. The results present the energy distribution of the density of interface traps (D it ) from 0 to 0.2 eV below SiC conduction band edge (E C ) of the sample with wet-ROA for the first time, and indicate that wet-ROA could reduce the D it in this energy range by more than 60%. The reduction in D it is attributed to the reaction between the introduced oxygen and the SiO x C y species, which results in C release and SiO x C y transformation into higher oxidation states, thus reducing the SiO x C y content and the SiO x C y interface transition region thickness. (semiconductor devices)

Modeling of capacitor charging dynamics in an energy harvesting system considering accurate electromechanical coupling effects

Science.gov (United States)

Bagheri, Shahriar; Wu, Nan; Filizadeh, Shaahin

2018-06-01

This paper presents an iterative numerical method that accurately models an energy harvesting system charging a capacitor with piezoelectric patches. The constitutive relations of piezoelectric materials connected with an external charging circuit with a diode bridge and capacitors lead to the electromechanical coupling effect and the difficulty of deriving accurate transient mechanical response, as well as the charging progress. The proposed model is built upon the Euler-Bernoulli beam theory and takes into account the electromechanical coupling effects as well as the dynamic process of charging an external storage capacitor. The model is validated through experimental tests on a cantilever beam coated with piezoelectric patches. Several parametric studies are performed and the functionality of the model is verified. The efficiency of power harvesting system can be predicted and tuned considering variations in different design parameters. Such a model can be utilized to design robust and optimal energy harvesting system.

Effect of nuclear radiation on the electrical properties of chemical double layer capacitors

International Nuclear Information System (INIS)

Laghari, J.R.; Hammoud, A.N.

1990-01-01

The effects of nuclear radiation on the electrical properties of chemical double layer capacitors are determined. The capacitors were irradiated in a 2-MW nuclear reactor to different fluence levels. The exposure rate was 2.2 x 10 10 n/cm 2 · s of thermal neutrons, 9.52 x 10 8 n/cm 2 · s of fast neutrons (> 2 MeV), and 1.47 x 10 6 rad/h of gamma radiation. The properties measured during and after irradiation included the capacitance, equivalent series resistance, and open-circuit voltage. The post-irradiation effect on the leakage current was also determined. It was found that while the capacitance increased during irradiation, the equivalent series resistance and the open-circuit voltage decreased slightly during irradiation. Changes in these properties were not permanent s was evident from post-irradiation measurements. The leakage current did not show any significant change with radiation. The results indicate that chemical double layer capacitors can be suitably used as backup power source in electronic equipment operating in a radiation environment with total fluences up to 4.05 x 10 14 n/cm 2

Mechanical states in wound capacitors

International Nuclear Information System (INIS)

Allen, J.J.; Reuter, R.C. Jr.

1989-01-01

The winding process is encountered frequently in manufacturing, such as winding of polymer films and paper, laminated pressure vessel construction, and the manufacture of wound capacitors. The winding of capacitors will typically involve hundreds of plies of conductor and dielectric wound over a core. Due to the large number of layers, the calculation of the mechanical studies within a wound capacitor is a significant computational task. The focus of Part II of this paper is the formulation and application of optimization techniques for the design of wound capacitors. The design criteria to be achieved is a specified uniform wound tension in a capacitor. The paper will formulate an optimization statement of the wound capacitor design problem, develop a technique for reducing the numerical calculation required to repeatedly analyze the capacitor as required by the optimization algorithm, and apply the technique to an example. 4 refs., 13 figs., 4 tabs

Enhanced biennial variability in the Pacific due to Atlantic capacitor effect.

Science.gov (United States)

Wang, Lei; Yu, Jin-Yi; Paek, Houk

2017-03-20

The El Niño-Southern Oscillation (ENSO) and the variability in the Pacific subtropical highs (PSHs) have major impacts on social and ecological systems. Here we present an Atlantic capacitor effect mechanism to suggest that the Atlantic is a key pacemaker of the biennial variability in the Pacific including that in ENSO and the PSHs during recent decades. The 'charging' (that is, ENSO imprinting the North Tropical Atlantic (NTA) sea surface temperature (SST) via an atmospheric bridge mechanism) and 'discharging' (that is, the NTA SST triggering the following ENSO via a subtropical teleconnection mechanism) processes alternate, generating the biennial rhythmic changes in the Pacific. Since the early 1990s, a warmer Atlantic due to the positive phase of Atlantic multidecadal oscillation and global warming trend has provided more favourable background state for the Atlantic capacitor effect, giving rise to enhanced biennial variability in the Pacific that may increase the occurrence frequency of severe natural hazard events.

Evaluation of Case Size 0603 BME Ceramic Capacitors

Science.gov (United States)

Teverovsky, Alexander A.

2015-01-01

High volumetric efficiency of commercial base metal electrode (BME) ceramic capacitors allows for a substantial reduction of weight and sizes of the parts compared to currently used military grade precious metal electrode (PME) capacitors. Insertion of BME capacitors in space applications requires a thorough analysis of their performance and reliability. In this work, six types of cases size 0603 BME capacitors from three vendors have been evaluated. Three types of multilayer ceramic capacitors (MLCCs) were designed for automotive industry and three types for general purposes. Leakage currents in the capacitors have been measured in a wide range of voltages and temperatures, and measurements of breakdown voltages (VBR) have been used to assess the proportion and severity of defects in the parts. The effect of soldering-related thermal shock stresses was evaluated by analysis of distributions of VBR for parts in 'as is' condition and after terminal solder dip testing at 350 C. Highly Accelerated Life Testing (HALT) at different temperatures was used to assess the activation energy of degradation of leakage currents and predict behavior of the parts at life test and normal operating conditions. To address issues related to rework and manual soldering, capacitors were soldered onto different substrates at different soldering conditions. The results show that contrary to a common assumption that large-size capacitors are mostly vulnerable to soldering stresses, cracking in small size capacitors does happen unless special measures are taken during assembly processes.

Information processing through a bio-based redox capacitor: signatures for redox-cycling.

Science.gov (United States)

Liu, Yi; Kim, Eunkyoung; White, Ian M; Bentley, William E; Payne, Gregory F

2014-08-01

Redox-cycling compounds can significantly impact biological systems and can be responsible for activities that range from pathogen virulence and contaminant toxicities, to therapeutic drug mechanisms. Current methods to identify redox-cycling activities rely on the generation of reactive oxygen species (ROS), and employ enzymatic or chemical methods to detect ROS. Here, we couple the speed and sensitivity of electrochemistry with the molecular-electronic properties of a bio-based redox-capacitor to generate signatures of redox-cycling. The redox capacitor film is electrochemically-fabricated at the electrode surface and is composed of a polysaccharide hydrogel with grafted catechol moieties. This capacitor film is redox-active but non-conducting and can engage diffusible compounds in either oxidative or reductive redox-cycling. Using standard electrochemical mediators ferrocene dimethanol (Fc) and Ru(NH3)6Cl3 (Ru(3+)) as model redox-cyclers, we observed signal amplifications and rectifications that serve as signatures of redox-cycling. Three bio-relevant compounds were then probed for these signatures: (i) ascorbate, a redox-active compound that does not redox-cycle; (ii) pyocyanin, a virulence factor well-known for its reductive redox-cycling; and (iii) acetaminophen, an analgesic that oxidatively redox-cycles but also undergoes conjugation reactions. These studies demonstrate that the redox-capacitor can enlist the capabilities of electrochemistry to generate rapid and sensitive signatures of biologically-relevant chemical activities (i.e., redox-cycling). Published by Elsevier B.V.

Memory characteristics of an MOS capacitor structure with double-layer semiconductor and metal heterogeneous nanocrystals

International Nuclear Information System (INIS)

Ni Henan; Wu Liangcai; Song Zhitang; Hui Chun

2009-01-01

An MOS (metal oxide semiconductor) capacitor structure with double-layer heterogeneous nanocrystals consisting of semiconductor and metal embedded in a gate oxide for nonvolatile memory applications has been fabricated and characterized. By combining vacuum electron-beam co-evaporated Si nanocrystals and self-assembled Ni nanocrystals in a SiO 2 matrix, an MOS capacitor with double-layer heterogeneous nanocrystals can have larger charge storage capacity and improved retention characteristics compared to one with single-layer nanocrystals. The upper metal nanocrystals as an additional charge trap layer enable the direct tunneling mechanism to enhance the flat voltage shift and prolong the retention time. (semiconductor devices)

Effects of Processing Temperatures of Nickel Plating on Capacitance Density of Alumina Film Capacitor.

Science.gov (United States)

Jeong, Myung-Sun; Ju, Byeong-Kwon; Lee, Jeon-Kook

2015-06-01

We observed the effects of nickel plating temperatures for controlling the surface morphologies of the deposited nickel layers on the alumina nano-pores. The alumina nano-channels were filled with nickel at various processing temperatures of 60-90 degrees C. The electrical properties of the alumina film capacitors were changed with processing temperatures. The electroless nickel plating (ENP) at 60 degrees C improved the nickel penetration into the alumina nano-channels due to the reduced reaction rate. Nickel layers are uniformly formed on the high aspect ratio alumina pores. Due to the uniform nickel electrode, the capacitance density of the alumina film capacitors is improved by the low leakage current, dissipation factor and equivalent series resistance. Alumina film capacitors made by ENP at 60 degrees C had a high capacitance density of 160 nF/cm2.

Capacitor discharge engineering

CERN Document Server

Früngel, Frank B A

1976-01-01

High Speed Pulse Technology, Volume III: Capacitor Discharge Engineering covers the production and practical application of capacitor dischargers for the generation and utilization of high speed pulsed of energy in different forms. This nine-chapter volume discusses the principles of electric current, voltage, X-rays, gamma rays, heat, beams of electrons, neutrons and ions, magnetic fields, sound, and shock waves in gases and liquids. Considerable chapters consider the applications of capacitor discharges, such as impulse hardening of steel, ultrapulse welding of precision parts, X-ray flash t

Reliability Evaluation of Power Capacitors in a Wind Turbine System

DEFF Research Database (Denmark)

Zhou, Dao; Blaabjerg, Frede

2018-01-01

With the increasing penetration of wind power, reliable and cost-effective wind energy production is of more and more importance. The doubly-fed induction generator based partial-scale wind power converter is still dominating in the existing wind farms. In this paper, the reliability assessment...... block diagram is used to bridge the gap between the Weibull distribution based component-level individual capacitor and the capacitor bank. A case study of a 2 MW wind power converter shows that the lifetime is significantly reduced from the individual capacitor to the capacitor bank. Besides, the dc...... of power capacitors is studied considering the annual mission profile. According to an electro-thermal stress evaluation, the time-to-failure distribution of both the dc-link capacitor and ac-side filter capacitor is detailed investigated. Aiming for the systemlevel reliability analysis, a reliability...

Materials science and integration bases for fabrication of (BaxSr1-x)TiO3 thin film capacitors with layered Cu-based electrodes

Science.gov (United States)

Fan, W.; Kabius, B.; Hiller, J. M.; Saha, S.; Carlisle, J. A.; Auciello, O.; Chang, R. P. H.; Ramesh, R.

2003-11-01

The synthesis and fundamental material properties of layered TiAl/Cu/Ta electrodes were investigated to achieve the integration of Cu electrodes with high-dielectric constant (κ) oxide thin films for application to the fabrication of high-frequency devices. The Ta layer is an excellent diffusion barrier to inhibit deleterious Cu diffusion into the Si substrate, while the TiAl layer provides an excellent barrier against oxygen diffusion into the Cu layer to inhibit Cu oxidation during the growth of the high-κ layer in an oxygen atmosphere. Polycrystalline (BaxSr1-x)TiO3 (BST) thin films were grown on the Cu-based bottom electrode by rf magnetron sputtering at temperatures in the range 400-600 °C in oxygen, to investigate the performance of BST/Cu-based capacitors. Characterization of the Cu-based layered structure using surface analytical methods showed that two amorphous oxide layers were formed on both sides of the TiAl barrier, such that the oxide layer on the free surface of the TiAl layer correlates with TiAlOx, while the oxide layer at the TiAl/Cu interface is an Al2O3-rich layer. This double amorphous barrier layer structure effectively prevents oxygen penetration towards the underlying Cu and Ta layers. The TiAlOx interfacial layer, which has a relatively low dielectric constant compared with BST, reduced the total capacitance of the BST thin film capacitors. In addition, the layered electrode-oxide interface roughening observed during the growth of BST films at high temperature, due to copper grain growth, resulted in large dielectric loss on the fabricated BST capacitors. These problems were solved by growing the BST layer at 450 °C followed by a rapid thermal annealing at 700 °C. This process significantly reduced the thickness of the TiAlOx layer and interface roughness resulting in BST capacitors exhibiting properties suitable for the fabrication of high-performance high-frequency devices. In summary, relatively high dielectric constant (280), low

Materials science and integration bases for fabrication of (BaxSr1-x)TiO3 thin film capacitors with layered Cu-based electrodes

International Nuclear Information System (INIS)

Fan, W.; Kabius, B.; Hiller, J.M.; Saha, S.; Carlisle, J.A.; Auciello, O.; Chang, R.P.H.; Ramesh, R.

2003-01-01

The synthesis and fundamental material properties of layered TiAl/Cu/Ta electrodes were investigated to achieve the integration of Cu electrodes with high-dielectric constant (κ) oxide thin films for application to the fabrication of high-frequency devices. The Ta layer is an excellent diffusion barrier to inhibit deleterious Cu diffusion into the Si substrate, while the TiAl layer provides an excellent barrier against oxygen diffusion into the Cu layer to inhibit Cu oxidation during the growth of the high-κ layer in an oxygen atmosphere. Polycrystalline (Ba x Sr 1-x )TiO 3 (BST) thin films were grown on the Cu-based bottom electrode by rf magnetron sputtering at temperatures in the range 400-600 deg. C in oxygen, to investigate the performance of BST/Cu-based capacitors. Characterization of the Cu-based layered structure using surface analytical methods showed that two amorphous oxide layers were formed on both sides of the TiAl barrier, such that the oxide layer on the free surface of the TiAl layer correlates with TiAlO x , while the oxide layer at the TiAl/Cu interface is an Al 2 O 3 -rich layer. This double amorphous barrier layer structure effectively prevents oxygen penetration towards the underlying Cu and Ta layers. The TiAlO x interfacial layer, which has a relatively low dielectric constant compared with BST, reduced the total capacitance of the BST thin film capacitors. In addition, the layered electrode-oxide interface roughening observed during the growth of BST films at high temperature, due to copper grain growth, resulted in large dielectric loss on the fabricated BST capacitors. These problems were solved by growing the BST layer at 450 deg. C followed by a rapid thermal annealing at 700 deg. C. This process significantly reduced the thickness of the TiAlO x layer and interface roughness resulting in BST capacitors exhibiting properties suitable for the fabrication of high-performance high-frequency devices. In summary, relatively high

Fe3O4/carbon hybrid nanoparticle electrodes for high-capacity electrochemical capacitors.

Science.gov (United States)

Lee, Jun Seop; Shin, Dong Hoon; Jun, Jaemoon; Lee, Choonghyeon; Jang, Jyongsik

2014-06-01

Fe3O4/carbon hybrid nanoparticles (FeCHNPs) were fabricated using dual-nozzle electrospraying, vapor deposition polymerization (VDP), and carbonization. FeOOH nanoneedles decorated with polypyrrole (PPy) nanoparticles (FePNPs) were fabricated by electrospraying pristine PPy mixed with FeCl3 solution, followed by heating stirring reaction. A PPy coating was then formed on the FeOOH nanoneedles through a VDP process. FeCHNPs were produced through carbonization of PPy and FeOOH phase transitions. These hybrid carbon nanoparticles (NPs) were used to build electrodes of electrochemical capacitors. The specific capacitance of the FeCHNPs was 455 F g(-1), which is larger than that of pristine PPy NPs (105 F g(-1)) or other hybrid PPy NPs. Furthermore, the FeCHNP-based capacitors exhibited better cycle stability during charge-discharge cycling than other hybrid NP capacitors. This is because the carbon layer on the Fe3 O4 surface formed a protective coating, preventing damage to the electrode materials during the charge-discharge processes. This fabrication technique is an effective approach for forming stable carbon/metal oxide nanostructures for energy storage applications. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Switched-capacitor multiply-by-two amplifier with reduced capacitor mismatches sensitivity and full swing sample signal common-mode voltage

International Nuclear Information System (INIS)

Xu Xinnan; Yao Suying; Xu Jiangtao; Nie Kaiming

2012-01-01

A switched-capacitor amplifier with an accurate gain of two that is insensitive to component mismatch is proposed. This structure is based on associating two sets of two capacitors in cross series during the amplification phase. This circuit permits the common-mode voltage of the sample signal to reach full swing. Using the charge-complement technique, the proposed amplifier can reduce the impact of parasitic capacitors on the gain accuracy effectively. Simulation results show that as sample signal common-mode voltage changes, the difference between the minimum and maximum gain error is less than 0.03%. When the capacitor mismatch is increased from 0 to 0.2%, the gain error is deteriorated by 0.00015%. In all simulations, the gain of amplifier is 69 dB. (semiconductor integrated circuits)

Effects of tunnel oxide process on SONOS flash memory characteristics

International Nuclear Information System (INIS)

Li, Dong Hua; Park, Il Han; Yun, Jang-Gn; Park, Byung-Gook

2010-01-01

In this paper, various process conditions of tunnel oxides are applied in SONOS flash memory to investigate their effects on charge transport during the program/erase operations. We focus the key point of analysis on Fermi-level (E F ) variation at the interface of silicon substrate and tunnel oxide. The Si-O chemical bonding information which describes the interface oxidation states at the Si/SiO 2 is obtained by the core-level X-ray photoelectron spectroscopy (XPS). Moreover, relative E F position is determined by measuring the Si 2p energy shift from XPS spectrums. Experimental results from memory characteristic measurement show that MTO tunnel oxide structure exhibits faster erase speed, and larger memory window during P/E cycle compared to FTO and RTO tunnel oxide structures. Finally, we examine long-term charge retention characteristic and find that the memory windows of all the capacitors remain wider than 2 V after 10 5 s.

Effects of Radiation on Capacitor Dielectrics

Science.gov (United States)

Bouquet, F. L.; Somoano, R. B.; Frickland, P. O.

1987-01-01

Data gathered on key design parameters. Report discusses study of electrical and mechanical properties of irradiated polymer dielectric materials. Data compiled for use by designers of high-energy-density capacitors that operate in presence of ionizing radiation. Study focused on polycarbonates, polyetheretherketones, polymethylpentenes, polyimides (including polyetherimide), polyolefins, polysulfones (including polyethersulfone and polyphenylsulfone), and polyvinylidene fluorides.

Effects of 6 MeV electron irradiation on the electrical properties and device parameters of Al/Al{sub 2}O{sub 3}/TiO{sub 2}/n-Si MOS capacitors

Energy Technology Data Exchange (ETDEWEB)

Laha, P.; Banerjee, I.; Barhai, P.K. [Department of Applied Physics, Birla Institute of Technology, Mesra, Ranchi 835215 (India); Das, A.K. [Laser and Plasma Technology Division, Bhabha Atomic Research Center, Mumbai 400085 (India); Bhoraskar, V.N. [Department of Physics, University of Pune, Ganeshkhind, Pune 411007 (India); Mahapatra, S.K., E-mail: skm@physics.ucla.edu [Department of Applied Physics, Birla Institute of Technology, Mesra, Ranchi 835215 (India)

2012-07-15

Highlights: Black-Right-Pointing-Pointer The electron irradiation effects make variation in the device parameters. Black-Right-Pointing-Pointer The device parameters changes due to percentage of defects and charge trapping. Black-Right-Pointing-Pointer Leakage current of Al/Al{sub 2}O{sub 3}/TiO{sub 2}/n-Si changes due to interface dangling bonds. Black-Right-Pointing-Pointer The leakage current mechanism of MOS structures is due to Poole-Frenkel effect. - Abstract: The effects of 6 MeV electron irradiation on the electrical properties and device parameter characteristics of Al/Al{sub 2}O{sub 3}/TiO{sub 2}/n-Si metal-oxide-semiconductor capacitors have been studied. Twelve Al/Al{sub 2}O{sub 3}/TiO{sub 2}/n-Si MOS capacitors were fabricated using r.f. magnetron sputtering and divided into four groups. The first group was not irradiated and treated as virgin. The rest were irradiated with 6 MeV electrons at doses 10, 20, and 30 kGy, maintaining the dose rate at {approx}1 kGy/min. Variations in crystallinity of the virgin and irradiated capacitors were studied using grazing incident X-ray diffraction. The thickness and in-depth elemental distributions of individual layers were determined using secondary ion mass apectrometry. Capacitance-voltage, conductance-voltage and leakage current-voltage characteristics of the virgin and irradiated samples were studied. The device parameters (flat band voltage, surface charge density and interface trap density of the virgin and irradiated structures) were determined. The electrical properties of the capacitors were investigated and the Poole-Frenkel coefficient of the capacitors was determined from leakage current measurements. The leakage current mechanism has been explained.

A Two-terminal Active Capacitor

DEFF Research Database (Denmark)

Wang, Haoran; Wang, Huai

2017-01-01

This letter proposes a concept of two-terminal active capacitor implemented by power semiconductor switches and passive elements. The active capacitor has the same level of convenience as a passive one with two power terminals only. It is application independent and can be specified by rated...... voltage, ripple current, equivalent series resistance, and operational frequency range. The concept, control method, self-power scheme, and impedance characteristics of the active capacitor are presented. A case study of the proposed active capacitor for a capacitive DC-link application is discussed....... The results reveal a significantly lower overall energy storage of passive elements and a reduced cost to fulfill a specific reliability target, compared to a passive capacitor solution. Proof-of-concept experimental results are given to verify the functionality of the proposed capacitor....

New series half-bridge converters with the balance input split capacitor voltages

Science.gov (United States)

Lin, Bor-Ren; Chiang, Huann-Keng; Wang, Shang-Lun

2016-03-01

This article presents a new dc/dc converter to perform the main functions of zero voltage switching (ZWS), low converter size, high switching frequency and low-voltage stress. Metal-oxide-semiconductor field-effect transistors (MOSFETs) with high switching frequency are used to reduce the converter size and increase circuit efficiency. To overcome low-voltage stress and high turn-on resistance of MOSFETs, the series half-bridge topology is adopted in the proposed converter. Hence, the low-voltage stress MOSFETs can be used for medium-input voltage applications. The asymmetric pulse-width modulation is used to generate the gating signals and achieve the ZWS. On the secondary side, the parallel connection of two diode rectifiers is adopted to reduce the current rating of passive components. On the primary side, the series connection of two transformers is used to balance two output inductor currents. Two flying capacitors are used to automatically balance the input split capacitor voltages. Finally, experiments with 1000 W rated power are performed to verify the theoretical analysis and the effectiveness of proposed converter.

Electrochemical capacitor based on materials with pseudocapacitive properties

OpenAIRE

Olivia Moreno, David

2011-01-01

This thesis is divided into two chapters. Chapter 1 is about energy storage device such as the electrochemical capacitor (EC) and the electrode materials used for its construction. The basic principle of supercapacitor performance, double-layer capacitance and pseudocapacitance phenomena are described in the introduction. Activated carbons, nanotubes, conducting polymers and metal oxides as well as their composites were considered as electrode materials. Symmetric and asymmetric configurat...

Electrical effects in superfluid helium. I. thermoelectric effect in Einstein's capacitor

International Nuclear Information System (INIS)

Ledenyov, D.O.; Ledenyov, V.O.; Ledenyov, O.P.

2014-01-01

The Einstein's ideas about the thermodynamical fluctuational nature of some electrical phenomena and the difference of electrical potentials U in a capacitor at temperature T were proposed in 1906-1907. On base of these ideas we explain the experimental results, which were recently observed under the action of the second sound standing wave in the electrical capacitors which take placed in the superfluid Sup>4He and in the torsional mechanical resonator. The Einstein's approach, based on the interrelation of thermal, mechanical and electrical fluctuations, allows to obtain the quantitative results, coinciding with the experimental data for the correlations of the alternate low temperatures difference in second sound wave and alternate electric potentials difference between the capacitor plates in superfluid helium at as well as in the rotating mechanical oscillator

Fractal Structures For Fixed Mems Capacitors

KAUST Repository

Elshurafa, Amro M.

2014-08-28

An embodiment of a fractal fixed capacitor comprises a capacitor body in a microelectromechanical system (MEMS) structure. The capacitor body has a first plate with a fractal shape separated by a horizontal distance from a second plate with a fractal shape. The first plate and the second plate are within the same plane. Such a fractal fixed capacitor further comprises a substrate above which the capacitor body is positioned.

Fractal Structures For Fixed Mems Capacitors

KAUST Repository

Elshurafa, Amro M.; Radwan, Ahmed Gomaa Ahmed; Emira, Ahmed A.; Salama, Khaled N.

2014-01-01

An embodiment of a fractal fixed capacitor comprises a capacitor body in a microelectromechanical system (MEMS) structure. The capacitor body has a first plate with a fractal shape separated by a horizontal distance from a second plate with a fractal shape. The first plate and the second plate are within the same plane. Such a fractal fixed capacitor further comprises a substrate above which the capacitor body is positioned.

Trench capacitor and method for producing the same

NARCIS (Netherlands)

2009-01-01

A method of fabricating a trench capacitor, and a trench capacitor fabricated thereby, are disclosed. The method involves the use of a vacuum impregnation process for a sol-gel film, to facilitate effective deposition of high- permittivity materials within a trench in a semiconductor substrate, to

The influence of current collector corrosion on the performance of electrochemical capacitors

Science.gov (United States)

Wojciechowski, Jarosław; Kolanowski, Łukasz; Bund, Andreas; Lota, Grzegorz

2017-11-01

This paper discusses the effect of current collector (stainless steel 316L) corrosion on the performance of electrochemical capacitors operated in aqueous electrolytes. This topic seems to be often neglected in scientific research. The studied electrolytes were 1 M H2SO4, 1 M KI, 1 M Na2SO4, 1 M KOH and 6 M KOH. The corrosion process was investigated by means of selected direct and alternating current techniques. The surface of the current collectors as well as the corrosion products were characterised using scanning electron microscopy, energy-dispersive X-ray spectroscopy, Raman spectroscopy and atomic force microscopy. Stainless steel 316L in alkaline solutions is characterised by the lowest values of corrosion potentials whereas the potentials in acidic media become the most noble. Our studies show that corrosion potentials increase with decreasing pH value. This phenomenon can be explained with the formation of passive oxide films on the stainless steel current collectors. The passive oxide films are usually thicker and more porous in alkaline solutions than that in the other electrolytes. The processes occurring at the electrode/electrolyte interfaces strongly influence the working parameters of electrochemical capacitors such as voltage, working potentials of single electrodes, self-discharge as well as the internal resistance and cycling stability.

Irradiation effects of 6 MeV electron on electrical properties of Al/Al2O3/n-Si MOS capacitors

International Nuclear Information System (INIS)

Laha, P.; Banerjee, I.; Bajaj, A.; Chakraborty, P.; Barhai, P.K.; Dahiwale, S.S.; Das, A.K.; Bhoraskar, V.N.; Kim, D.; Mahapatra, S.K.

2012-01-01

The influence of 6 MeV electron irradiation on the electrical properties of Al/Al 2 O 3 /n-Si metal–oxide–semiconductor (MOS) capacitors has been investigated. Using rf magnetron sputtering deposition technique, Al/Al 2 O 3 /n-Si MOS capacitors were fabricated and such twelve capacitors were divided into four groups. The first group of MOS capacitors was not irradiated with 6 MeV electrons and treated as virgin. The second group, third group and fourth group of MOS capacitors were irradiated with 6 MeV electrons at 10 kGy, 20 kGy, and 30 kGy doses, respectively, keeping the dose rate ∼1 kGy/min. The variations in crystallinity of the virgin and irradiated MOS capacitors have been compared from GIXRD (Grazing Incidence X-ray Diffraction) spectra. Thickness and in-depth elemental distributions of individual layers were performed using Secondary Ion Mass Spectrometry (SIMS). The device parameters like flat band voltage (V FB ) and interface trap density (D it ) of virgin and irradiated MOS capacitors have been calculated from C vs V and G/ω vs V curve, respectively. The electrical properties of the capacitors were investigated from the tan δ vs V graph. The device parameters were estimated using C–V and G/ω–V measurements. Poole–Frenkel coefficient (β PF ) of the MOS capacitors was determined from leakage current (I)–voltage (V) measurement. The leakage current mechanism was proposed from the β PF value. - Highlights: ► The electron irradiation effects make variation in the device parameters. ► The device parameters changes due to percentage of defects and charge trapping. ► Leakage current of Al/Al 2 O 3 /n-Si changes due to interface dangling bonds. ► The leakage current mechanism of MOS structures is due to Poole-Frenkel effect.

Metallopolymer capacitor in "one pot" by self-directed UV-assisted process.

Science.gov (United States)

Ijeri, Vijaykumar S; Nair, Jijeesh R; Gerbaldi, Claudio; Bongiovanni, Roberta M; Penazzi, Nerino

2010-11-01

Silver metalized methacrylate films are prepared by single-step UV curing process with good conductivity on both sides. The major component of the composite is Bisphenol A ethoxylate dimethacrylate, which can be photopolymerized by a photoreactive initiator under UV light. Under the same conditions of UV irradiation, silver ions are deposited as metal nanoparticles while the pyrrole is oxidized to polypyrrole. The migration of silver ions and pyrrole toward both surfaces during polymerization leads to the formation of a metallo-polymer capacitor. The composite films are characterized by SEM-EDX and electrical measurements for possible applications as capacitors in flexible and/or nonplanar electronics.

Electrical analysis of high dielectric constant insulator and metal gate metal oxide semiconductor capacitors on flexible bulk mono-crystalline silicon

KAUST Repository

Ghoneim, Mohamed T.

2015-06-01

We report on the electrical study of high dielectric constant insulator and metal gate metal oxide semiconductor capacitors (MOSCAPs) on a flexible ultra-thin (25 μm) silicon fabric which is peeled off using a CMOS compatible process from a standard bulk mono-crystalline silicon substrate. A lifetime projection is extracted using statistical analysis of the ramping voltage (Vramp) breakdown and time dependent dielectric breakdown data. The obtained flexible MOSCAPs operational voltages satisfying the 10 years lifetime benchmark are compared to those of the control MOSCAPs, which are not peeled off from the silicon wafer. © 2014 IEEE.

Metal-oxide-semiconductor capacitors and Schottky diodes studied with scanning microwave microscopy at 18 GHz

Energy Technology Data Exchange (ETDEWEB)

Kasper, M. [Christian Doppler Laboratory for Nanoscale Methods in Biophysics, Johannes Kepler University of Linz, Gruberstrasse 40, 4020 Linz (Austria); Gramse, G. [Biophysics Institute, Johannes Kepler University of Linz, Gruberstrasse 40, 4020 Linz (Austria); Hoffmann, J. [METAS, National Metrology Institute of Switzerland, Lindenweg 50, 3003 Bern-Wabern (Switzerland); Gaquiere, C. [MC2 technologies, 5 rue du Colibri, 59650 Villeneuve D' ascq (France); Feger, R.; Stelzer, A. [Institute for Communications Engineering and RF-Systems, Johannes Kepler University, Altenberger Str. 69, 4040 Linz (Austria); Smoliner, J. [Vienna University of Technology, Institute for Solid State Electronics, Floragasse 7, 1040 Vienna (Austria); Kienberger, F., E-mail: ferry-kienberger@keysight.com [Keysight Technologies Austria, Measurement Research Lab, Gruberstrasse 40, 4020 Linz (Austria)

2014-11-14

We measured the DC and RF impedance characteristics of micrometric metal-oxide-semiconductor (MOS) capacitors and Schottky diodes using scanning microwave microscopy (SMM). The SMM consisting of an atomic force microscopy (AFM) interfaced with a vector network analyser (VNA) was used to measure the reflection S11 coefficient of the metallic MOS and Schottky contact pads at 18 GHz as a function of the tip bias voltage. By controlling the SMM biasing conditions, the AFM tip was used to bias the Schottky contacts between reverse and forward mode. In reverse bias direction, the Schottky contacts showed mostly a change in the imaginary part of the admittance while in forward bias direction the change was mostly in the real part of the admittance. Reference MOS capacitors which are next to the Schottky diodes on the same sample were used to calibrate the SMM S11 data and convert it into capacitance values. Calibrated capacitance between 1–10 fF and 1/C{sup 2} spectroscopy curves were acquired on the different Schottky diodes as a function of the DC bias voltage following a linear behavior. Additionally, measurements were done directly with the AFM-tip in contact with the silicon substrate forming a nanoscale Schottky contact. Similar capacitance-voltage curves were obtained but with smaller values (30–300 aF) due to the corresponding smaller AFM-tip diameter. Calibrated capacitance images of both the MOS and Schottky contacts were acquired with nanoscale resolution at different tip-bias voltages.

Switched-capacitor isolated LED driver

Science.gov (United States)

Sanders, Seth R.; Kline, Mitchell

2016-03-22

A switched-capacitor voltage converter which is particularly well-suited for receiving a line voltage from which to drive current through a series of light emitting diodes (LEDs). Input voltage is rectified in a multi-level rectifier network having switched capacitors in an ascending-bank configuration for passing voltages in uniform steps between zero volts up to full received voltage V.sub.DC. A regulator section, operating on V.sub.DC, comprises switched-capacitor stages of H-bridge switching and flying capacitors. A current controlled oscillator drives the states of the switched-capacitor stages and changes its frequency to maintain a constant current to the load. Embodiments are described for isolating the load from the mains, utilizing an LC tank circuit or a multi-primary-winding transformer.

SOGI-based capacitor voltage feedback active damping in LCL-filtered grid converters

DEFF Research Database (Denmark)

Xin, Zhen; Wang, Xiongfei; Loh, Poh Chiang

2015-01-01

The capacitor voltage feedback active damping control is an attractive way to suppress LCL-filter resonance especially for the systems where the capacitor voltage is used for grid synchronization, since no extra sensors are added. The derivative is the core of the capacitor voltage feedback active...... derivative is more suited for capacitor voltage feedback active damping control. Experimental results validate the effectiveness of the proposed method....

Fractal Structures For Mems Variable Capacitors

KAUST Repository

Elshurafa, Amro M.

2014-08-28

In accordance with the present disclosure, one embodiment of a fractal variable capacitor comprises a capacitor body in a microelectromechanical system (MEMS) structure, wherein the capacitor body has an upper first metal plate with a fractal shape separated by a vertical distance from a lower first metal plate with a complementary fractal shape; and a substrate above which the capacitor body is suspended.

An Auger electron spectroscopy study on the anodization process of high-quality thin-film capacitors made of hafnium

International Nuclear Information System (INIS)

Noya, Atsushi; Sasaki, Katsutaka; Umezawa, Toshiji

1989-01-01

Formation process of the anodic oxide film of hafnium for use as a thin-film capacitor has been examined by the current-voltage characteristics of the anodization and the in-depth analysis of formed oxide using Auger electron spectroscopy. It is found that the oxide growth obeys three different rate laws such as the linear rate law at first and next the parabolic rate law during the constant current anodization, and then the reciprocal logarithmic rate law during the constant voltage anodization following after the constant current process. From the Auger electron spectroscopy analysis, it is found that the shape of the compositional depth profile of the grown oxide film varies associating with the rate law of oxidation obeyed. The variation of depth profile correlating with the rate law is discussed with respect to each elementary process such as the transport and/or the reaction of chemical species interpreted from the over-all behavior of anodization process. It is revealed that the stoichiometric film having an interface with sharp transition, which is favorable for obtaining excellent electrical properties of the capacitor, can be obtained under the condition that the phase-boundary reaction is the rate-determining step of the anodization. The constant voltage anodization process also satisfies such circumstances and therefore can be favorable method for preparing highquality thin-film capacitors. (author)

Nanodomain Engineering in Ferroelectric Capacitors with Graphene Electrodes.

Science.gov (United States)

Lu, Haidong; Wang, Bo; Li, Tao; Lipatov, Alexey; Lee, Hyungwoo; Rajapitamahuni, Anil; Xu, Ruijuan; Hong, Xia; Farokhipoor, Saeedeh; Martin, Lane W; Eom, Chang-Beom; Chen, Long-Qing; Sinitskii, Alexander; Gruverman, Alexei

2016-10-12

Polarization switching in ferroelectric capacitors is typically realized by application of an electrical bias to the capacitor electrodes and occurs via a complex process of domain structure reorganization. As the domain evolution in real devices is governed by the distribution of the nucleation centers, obtaining a domain structure of a desired configuration by electrical pulsing is challenging, if not impossible. Recent discovery of polarization reversal via the flexoelectric effect has opened a possibility for deterministic control of polarization in ferroelectric capacitors. In this paper, we demonstrate mechanical writing of arbitrary-shaped nanoscale domains in thin-film ferroelectric capacitors with graphene electrodes facilitated by a strain gradient induced by a tip of an atomic force microscope (AFM). A phase-field modeling prediction of a strong effect of graphene thickness on the threshold load required to initiate mechanical switching has been confirmed experimentally. Deliberate voltage-free domain writing represents a viable approach for development of functional devices based on domain topology and electronic properties of the domains and domain walls.

Carbon activation process for increased surface accessibility in electrochemical capacitors

Science.gov (United States)

Doughty, Daniel H.; Eisenmann, Erhard T.

2001-01-01

A process for making carbon film or powder suitable for double capacitor electrodes having a capacitance of up to about 300 F/cm.sup.3 is disclosed. This is accomplished by treating in aqueous nitric acid for a period of about 5 to 15 minutes thin carbon films obtained by carbonizing carbon-containing polymeric material having a high degree of molecular directionality, such as polyimide film, then heating the treated carbon film in a non-oxidizing atmosphere at a non-graphitizing temperature of at least 350.degree. C. for about 20 minutes, and repeating alternately the nitric acid step and the heating step from 7 to 10 times. Capacitors made with this carbon may find uses ranging from electronic devices to electric vehicle applications.

Memory Effect of Metal-Oxide-Silicon Capacitors with Self-Assembly Double-Layer Au Nanocrystals Embedded in Atomic-Layer-Deposited HfO2 Dielectric

International Nuclear Information System (INIS)

Yue, Huang; Hong-Yan, Gou; Qing-Qing, Sun; Shi-Jin, Ding; Wei, Zhang; Shi-Li, Zhang

2009-01-01

We report the chemical self-assembly growth of Au nanocrystals on atomic-layer-deposited HfO 2 films aminosilanized by (3-Aminopropyl)-trimethoxysilane aforehand for memory applications. The resulting Au nanocrystals show a density of about 4 × 10 11 cm −2 and a diameter range of 5–8nm. The metal-oxide-silicon capacitor with double-layer Au nanocrystals embedded in HfO 2 dielectric exhibits a large C – V hysteresis window of 11.9V for ±11 V gate voltage sweeps at 1 MHz, a flat-band voltage shift of 1.5 V after the electrical stress under 7 V for 1 ms, a leakage current density of 2.9 × 10 −8 A/cm −2 at 9 V and room temperature. Compared to single-layer Au nanocrystals, the double-layer Au nanocrystals increase the hysteresis window significantly, and the underlying mechanism is thus discussed

Experimental analysis of an MIM capacitor with a concave shield

International Nuclear Information System (INIS)

Liu Lintao; Yu Mingyan; Wang Jinxiang

2009-01-01

A novel shielding scheme is developed by inserting a concave shield between a metal-insulator-metal (MIM) capacitor and the silicon substrate. Chip measurements reveal that the concave shield improves the quality factor by 11% at 11.8 GHz and 14% at 18.8 GHz compared with an unshielded MIM capacitor. It also alleviates the effect on shunt capacitance between the bottom plate of the MIM capacitor and the shield layer. Moreover, because the concave shields simplify substrate modeling, a simple circuit model of the MIM capacitor with concave shield is presented for radio frequency applications.

Capacitor Voltages Measurement and Balancing in Flying Capacitor Multilevel Converters Utilizing a Single Voltage Sensor

DEFF Research Database (Denmark)

Farivar, Glen; Ghias, Amer M. Y. M.; Hredzak, Branislav

2017-01-01

This paper proposes a new method for measuring capacitor voltages in multilevel flying capacitor (FC) converters that requires only one voltage sensor per phase leg. Multiple dc voltage sensors traditionally used to measure the capacitor voltages are replaced with a single voltage sensor at the ac...... side of the phase leg. The proposed method is subsequently used to balance the capacitor voltages using only the measured ac voltage. The operation of the proposed measurement and balancing method is independent of the number of the converter levels. Experimental results presented for a five-level FC...

Super miniaturization of film capacitor dielectrics

Science.gov (United States)

Lavene, B.

1981-01-01

The alignment of the stable electrical characteristics of film capacitors in the physical dimensions of ceramic and tantalum capacitors are discussed. The reliability of polycarbonate and mylar capacitors are described with respect to their compatibility with military specifications. Graphic illustrations are presented which show electrical and physical comparisons of film, ceramic, and tantalum capacitors. The major focus is on volumetric efficiency, weight reduction, and electrical stability.

Impacts of oxidants in atomic layer deposition method on Al2O3/GaN interface properties

Science.gov (United States)

Taoka, Noriyuki; Kubo, Toshiharu; Yamada, Toshikazu; Egawa, Takashi; Shimizu, Mitsuaki

2018-01-01

The electrical interface properties of GaN metal-oxide-semiconductor (MOS) capacitors with an Al2O3 gate insulator formed by atomic layer deposition method using three kinds of oxidants were investigated by the capacitance-voltage technique, Terman method, and conductance method. We found that O3 and the alternate supply of H2O and O3 (AS-HO) are effective for reducing the interface trap density (D it) at the energy range of 0.15 to 0.30 eV taking from the conduction band minimum. On the other hand, we found that surface potential fluctuation (σs) induced by interface charges for the AS-HO oxidant is much larger than that for a Si MOS capacitor with a SiO2 layer formed by chemical vapor deposition despite the small D it values for the AS-HO oxidant compared with the Si MOS capacitor. This means that the total charged center density including the fixed charge density, charged slow trap density, and charged interface trap density for the GaN MOS capacitor is higher than that for the Si MOS capacitor. Therefore, σs has to be reduced to improve the performances and reliability of GaN devices with the Al2O3/GaN interfaces.

Reliability of high-voltage pulse capacitors operating in large energy storages

International Nuclear Information System (INIS)

Kuchinskij, G.S.; Fedorova, V.S.; Shilin, O.V.

1982-01-01

To improve the reliability of pulse capacitors operating in capacitive energy storages, processes, resulting in break-down of capacitor insulation were investigated. A statistic model of failures was constructed and reliability of real capacitors, functioning at operating electric intensity Usub(oper) equal 70 kV/mm and at elevated intensity 90 kV/mm was calculated. Results of testing the IK50-ZU4 capacitor are given. The form of the capacitor service life distribution function was specified. To provide and confirm the assigned capacitor reliability, it is necessary to speed up tests at a higher voltage (1.3-1.5) Usub(oper). To improve the capacitor reliability, it is advisable to conduct acceptance tests, which include hold at increased constant voltage (1.3-1.5) Usub(oper) during 1-3 min and the effect of pulses of increased voltage (1.2-1.3) Usub(oper) with the pulse shape corresponding to operating conditions

An Aqueous Metal-ion Capacitor with Oxidised Carbon Nanotubes and Metallic Zinc Electrodes

Directory of Open Access Journals (Sweden)

Yuheng Tian

2016-10-01

Full Text Available An aqueous metal ion capacitor comprising of a zinc anode, an oxidized carbon nanotubes (oCNTs cathode and a zinc sulfate electrolyte is reported. Since the shuttling cation is Zn2+, this typical metal ion capacitor is named as zinc-ion capacitor (ZIC. The ZIC integrates the divalent zinc stripping/plating chemistry with the surface-enabled pseudocapacitive cation adsorption/desorption on oCNTs. The surface chemistry and crystallographic structure of oCNTs were extensively characterized by combining X-ray photoelectron spectroscopy, Fourier-transformed infrared spectroscopy, Raman spectroscopy and X-ray powder diffraction. The function of the surface oxygen groups in surface cation storage was elucidated by a series of electrochemical measurement and the surface-enabled ZIC showed better performance than the ZIC with an un-oxidized CNT cathode. The reaction mechanism at the oCNT cathode involves the additional reversible Faradaic process, while the CNTs merely show electric double layer capacitive behavior involving a non-Faradaic process. The aqueous hybrid ZIC comprising the oCNT cathode exhibited a specific capacitance of 20 mF cm-2 (corresponding to 53 F g-1 in the range of 0-1.8 V at 10 mV s-1 and a stable cycling performance up to 5000 cycles.

Fractal Structures For Mems Variable Capacitors

KAUST Repository

Elshurafa, Amro M.; Radwan, Ahmed Gomaa Ahmed; Emira, Ahmed A.; Salama, Khaled N.

2014-01-01

In accordance with the present disclosure, one embodiment of a fractal variable capacitor comprises a capacitor body in a microelectromechanical system (MEMS) structure, wherein the capacitor body has an upper first metal plate with a fractal shape

Green synthesis of CuxO nanoscale MOS capacitors processed at low temperatures

KAUST Repository

Al-Shehri, Safeyah

2017-01-10

In this work, we employed two nontoxic green chemistry methods to develop solution-processed copper oxide CuxO thin films at low annealing temperature of 200 °C. The first aqueous precursor of CuxO was prepared by mixing the copper powder with spinach leaves extract, whereas the other solution was formulated using the water-based polyol reduction method of Cu(II) nitrate. The as-prepared precursors were then spun on SiO2/P+ Si substrates to form nanoscale Metal-Oxide-Semiconductor (MOS) capacitors by which some valuable information about the CuxO semiconductor films and their interfaces with dielectric were acquired. Both fabricated MOS capacitors exhibited p-type polarity with negative flat-band voltages. However, the MOS based on spinach extract-CuxO films showed small hysteresis of 100 mV, which could be attributed to its large grain size that sequentially leads to smooth interface and less trap density.

Green synthesis of CuxO nanoscale MOS capacitors processed at low temperatures

KAUST Repository

Al-Shehri, Safeyah; Al-Senany, Norah; Altuwirqi, Reem; Bayahya, Amani; Alshammari, Fwzah Hamud; Wang, Zhenwei; Al-Jawhari, Hala

2017-01-01

In this work, we employed two nontoxic green chemistry methods to develop solution-processed copper oxide CuxO thin films at low annealing temperature of 200 °C. The first aqueous precursor of CuxO was prepared by mixing the copper powder with spinach leaves extract, whereas the other solution was formulated using the water-based polyol reduction method of Cu(II) nitrate. The as-prepared precursors were then spun on SiO2/P+ Si substrates to form nanoscale Metal-Oxide-Semiconductor (MOS) capacitors by which some valuable information about the CuxO semiconductor films and their interfaces with dielectric were acquired. Both fabricated MOS capacitors exhibited p-type polarity with negative flat-band voltages. However, the MOS based on spinach extract-CuxO films showed small hysteresis of 100 mV, which could be attributed to its large grain size that sequentially leads to smooth interface and less trap density.

Ion beam sputter deposited TiAlN films for metal-insulator-metal (Ba,Sr)TiO3 capacitor application

International Nuclear Information System (INIS)

Lee, S.-Y.; Wang, S.-C.; Chen, J.-S.; Huang, J.-L.

2008-01-01

The present study evaluated the feasibility of TiAlN films deposited using the ion beam sputter deposition (IBSD) method for metal-insulator-metal (MIM) (Ba,Sr)TiO 3 (BST) capacitors. The BST films were crystallized at temperatures above 650 deg. C. TiAlN films deposited using the IBSD method were found having smooth surface and low electrical resistivity at high temperature conditions. TiAlN films showed a good diffusion barrier property against BST components. The J-E (current density-electric field) characteristics of Al/BST/TiAlN capacitors were good, with a high break down electric field of ± 2.5 MV/cm and a leakage current density of about 1 x 10 -5 A/cm 2 at an applied field of ± 0.5 MV/cm. Thermal stress and lateral oxidation that occurred at the interface damaged the capacitor stacking structure. Macro holes that dispersed on the films resulted in higher leakage current and inconsistent J-E characteristics. Vacuum annealing with lower heating rate and furnace cooling, and a Ti-Al adhesion layer between TiAlN and the SiO 2 /Si substrate can effectively minimize the stress effect. TiAlN film deposited using IBSD can be considered as a potential electrode and diffusion barrier material for MIM BST capacitors

Nonmedical application of computed tomography to power capacitor quality assesment

International Nuclear Information System (INIS)

Kruger, R.P.

1981-01-01

Present research and development efforts at Los Alamos Scientific Laboratory require the design and use of high-efficiency rapid-discharge energy storage capacitors for laser isotope separation and plasma physics programs. In these applications, capacitors are subjected to electrical, mechanical, thermal, and other environmental stresses. These stresses cause the dielectric constant to change due to gasification from arcing at nonsoldering connections, which produce a chemical reduction of the dielectric material. This effectively limits the lifetime of the capacitor. The programs mentioned above require capacitors with a multikilohertz frequency response at a current of tens of kiloamperes and a voltage of at least 100 kV. The lifetime of such capacitors should exceed 10 10 charge/discharge cycles. Such capacitors do not presently exist. The exploration of new capacitor designs will require the use of both electrical functional tests and tests that show the changes in internal physical structure as the capacitor is repeatedly stressed by the charge/discharge cycle. The integration of electrical and structural tests throughout the life cycle of a candidate capacitor makes it imperative that the structural integrity tests be nondestructive. Computed tomography (CT) makes this integration possible. The work reported here is the result of a pilot project designed to show the potential use of CT for this application. This work includes visualization of material defects using both a layered sequence of conventional tomographic slices and orthogonal multiangular pseudoradiographs generated from these slices

Transparent and Flexible Capacitors with an Ultrathin Structure by Using Graphene as Bottom Electrodes

Directory of Open Access Journals (Sweden)

Tao Guo

2017-11-01

Full Text Available Ultrathin, transparent and flexible capacitors using graphene as the bottom electrodes were directly fabricated on polyethylene naphthalate (PEN substrates. ZrO2 dielectric films were deposited on the treated surface of graphene by atomic layer deposition (ALD. The deposition process did not introduce any detectible defects in the graphene, as indicated by Raman measurements, guaranteeing the electrical performances of the graphene electrodes. The Aluminum-doped zinc oxide (AZO films were prepared as the top electrodes using the ALD technique. The capacitors presented a high capacitance density (10.3 fF/μm2 at 10 kHz and a relatively low leakage current (5.3 × 10−6 A/cm2 at 1 V. Bending tests revealed that the capacitors were able to work normally at an outward bending radius of 10 mm without any deterioration of electrical properties. The capacitors exhibited an average optical transmittance of close to 70% at visible wavelengths. Thus, it opens the door to practical applications in transparent integrated circuits.

A combined theoretical and experimental approach of a new ternary metal oxide in molybdate composite for hybrid energy storage capacitors

Science.gov (United States)

Minakshi, M.; Watcharatharapong, T.; Chakraborty, S.; Ahuja, R.

2018-04-01

Sustainable energy sources require an efficient energy storage system possessing excellent electrochemical properties. The better understanding of possible crystal configurations and the development of a new ternary metal oxide in molybdate composite as an electrode for hybrid capacitors can lead to an efficient energy storage system. Here, we reported a new ternary metal oxide in molybdate composite [(Mn1/3Co1/3Ni1/3)MoO4] prepared by simple combustion synthesis with an extended voltage window (1.8 V vs. Carbon) resulting in excellent specific capacity 35 C g-1 (58 F g-1) and energy density (50 Wh kg-1 at 500 W kg-1) for a two electrode system in an aqueous NaOH electrolyte. The binding energies measured for Mn, Co, and Ni 2p are consistent with the literature, and with the metal ions being present as M(II), implying that the oxidation states of the transition metals are unchanged. The experimental findings are correlated well through density functional theory based electronic structure calculations. Our reported work on the ternary metal oxide studies (Mn1/3Co1/3Ni1/3)MoO4 suggests that will be an added value to the materials for energy storage.

Electromechanical capacitor for energy transfer

International Nuclear Information System (INIS)

Carroll, T.A.; Chowdhuri, P.; Marshall, J.

1983-01-01

Inductive energy transfer between two magnets can be achieved with almost 100% efficiency with a transfer capacitor. However, the bulk and cost will be high, and reliability low if conventional capacitors are used. A homopolar machine, used as a capacitor, will be compact and economical. A homopolar machine was designed with counter-rotating copper disks completely immersed in a liquid metal (NaK-78) to work as a pulse capacitor. Absence of solid-brush collectors minimized wear and frictional losses. Wetting of the copper disks throughout the periphery by the liquid metal minimized the resistive losses at the collector interface. A liquid-metal collector would, however, introduce hydrodynamic and magnetohydrodynamic losses. The selected liquid metal, e.g., NaK-78 will produce the lowest of such losses among the available liquid metals. An electromechanical capacitor of this design was tested at various dc magnetic fields. Its measured capacitance was about 100 farads at a dc magnetic field of 1.15 tesla

Force on an Asymmetric Capacitor

National Research Council Canada - National Science Library

Bahder, Thomas

2003-01-01

.... At present, the physical basis for the Biefeld-Brown effect is not understood. The order of magnitude of the net force on the asymmetric capacitor is estimated assuming two different mechanisms of charge conduction between its electrodes...

Composite magnetorheological elastomers as dielectrics for plane capacitors: Effects of magnetic field intensity

Directory of Open Access Journals (Sweden)

Maria Balasoiu

Full Text Available The fabrication of composite magnetorheological elastomers (MRECs based on silicone rubber, carbonyl iron microparticles (10% vol. and polyurethane elastomer doped with 0%, 10% and 20% volume concentration TiO2 microparticles is presented. The obtained MRECs have the shape of thin foils and are used as dielectric materials for manufacturing plane capacitors. Using the plane capacitor method and expression of capacitance as a function of magnetic field intensity, combined with linear elasticity theory, the static magnetoelastic model of the composite is obtained and analyzed. Keywords: Magnetorheological elastomer, TiO2 microparticles, Silicone rubber, Carbonyl iron, Plane capacitor, Magnetoelasticity

The Effects of Self-Discharge on the Performance of Symmetric Electric Double-Layer Capacitors and Active Electrolyte-Enhanced Supercapacitors: Insights from Modeling and Simulation

Science.gov (United States)

Ike, Innocent S.; Sigalas, Iakovos; Iyuke, Sunny E.

2017-02-01

The effects of self-discharge on the performance of symmetric electric double-layer capacitors (EDLCs) and active electrolyte-enhanced supercapacitors were examined by incorporating self-discharge into electrochemical capacitor models during charging and discharging. The sources of self-discharge in capacitors were side reactions or redox reactions and several impurities and electric double-layer (EDL) instability. The effects of self-discharge during capacitor storage was negligible since it took a fully charged capacitor a minimum of 14.0 days to be entirely discharged by self-discharge in all conditions studied, hence self-discharge in storage condition can be ignored. The first and second charge-discharge cycle energy efficiencies η_{{{{E}}1}} and η_{{{{E}}2}} of a capacitor of electrode effective conductivity α1 = 0.05 S/cm with only EDL instability self-discharge with current density J_{{VR}} = 1.25 × 10-3 A/cm2 were 72.33% and 72.34%, respectively. Also, energy efficiencies η_{{{{E}}1}} and η_{{{{E}}2}} of a similar capacitor with both side reactions and redox reactions and EDL instability self-discharges with current densities J_{{VR}} = 0.00125 A/cm2 and J_{{{{VR}}1}} = 0.0032 A/cm2 were 38.13% and 38.14% respectively, compared with 84.24% and 84.25% in a similar capacitor without self-discharge. A capacitor with only EDL instability self-discharge and that with both side reactions and redox reactions and EDL instability self-discharge lost 9.73 Wh and 28.38 Wh of energy, respectively, through self-discharge during charging and discharging. Hence, EDLCs charging and discharging time is significantly dependent on the self-discharge rate which are too large to be ignored.

Absorption Voltages and Insulation Resistance in Ceramic Capacitors with Cracks

Science.gov (United States)

Teverovsky, Alexander

2016-01-01

Time dependence of absorption voltages (Vabs) in different types of low-voltage X5R and X7R ceramic capacitors was monitored for a maximum duration of hundred hours after polarization. To evaluate the effect of mechanical defects on Vabs, cracks in the dielectric were introduced either mechanically or by thermal shock. The maximum absorption voltage, time to roll-off, and the rate of voltage decrease are shown to depend on the crack-related leakage currents and insulation resistance in the parts. A simple model that is based on the Dow equivalent circuit for capacitors with absorption has been developed to assess the insulation resistance of capacitors. Standard measurements of the insulation resistance, contrary to the measurements based on Vabs, are not sensitive to the presence of mechanical defects and fail to reveal capacitors with cracks. Index Terms: Ceramic capacitor, insulation resistance, dielectric absorption, cracking.

Ion beam sputter deposited TiAlN films for metal-insulator-metal (Ba,Sr)TiO{sub 3} capacitor application

Energy Technology Data Exchange (ETDEWEB)

Lee, S.-Y. [Department of Materials Science and Engineering, National Cheng Kung University, No. 1, Ta-Hsueh Road, Tainan, Taiwan (China); Wang, S.-C. [Department of Mechanical Engineering, Southern Taiwan University of Technology, No. 1, Nantai St, Yung-Kang City, Tainan, Taiwan (China); Chen, J.-S. [Department of Materials Science and Engineering, National Cheng Kung University, No. 1, Ta-Hsueh Road, Tainan, Taiwan (China); Huang, J.-L. [Department of Materials Science and Engineering, National Cheng Kung University, No. 1, Ta-Hsueh Road, Tainan, Taiwan (China)], E-mail: jlh888@mail.ncku.edu.tw

2008-09-01

The present study evaluated the feasibility of TiAlN films deposited using the ion beam sputter deposition (IBSD) method for metal-insulator-metal (MIM) (Ba,Sr)TiO{sub 3} (BST) capacitors. The BST films were crystallized at temperatures above 650 deg. C. TiAlN films deposited using the IBSD method were found having smooth surface and low electrical resistivity at high temperature conditions. TiAlN films showed a good diffusion barrier property against BST components. The J-E (current density-electric field) characteristics of Al/BST/TiAlN capacitors were good, with a high break down electric field of {+-} 2.5 MV/cm and a leakage current density of about 1 x 10{sup -5} A/cm{sup 2} at an applied field of {+-} 0.5 MV/cm. Thermal stress and lateral oxidation that occurred at the interface damaged the capacitor stacking structure. Macro holes that dispersed on the films resulted in higher leakage current and inconsistent J-E characteristics. Vacuum annealing with lower heating rate and furnace cooling, and a Ti-Al adhesion layer between TiAlN and the SiO{sub 2}/Si substrate can effectively minimize the stress effect. TiAlN film deposited using IBSD can be considered as a potential electrode and diffusion barrier material for MIM BST capacitors.

Magnetic and magneto-dielectric properties of magneto-electric field effect capacitor using Cr2O3

OpenAIRE

Takeshi, Yokota; Shotaro, Murata; Takaaki, Kuribayashi; Manabu, Gomi

2008-01-01

We investigated the magnetic and dielectric properties of a metal (Pt)/insulator (Cr_2O_3)/magnetic floating gate (Fe)/tunnel layer (CeO_2)/semiconductor (Si) capacitor. This capacitor shows capacitance-voltage (C-V) properties typical of a Si Metal-Insulator-Semiconductor (MIS) capacitor with hysteresis, which indicates that electrons have been injected into the Fe layer. The capacitor also shows ferromagnetic properties. The C-V curve has a hysteresis window with a clockwise trace. This hys...

Polyvinylidene fluoride film as a capacitor dielectric

Science.gov (United States)

Dematos, H. V.

1981-01-01

Thin strips of polyvinylidene fluoride film (PVDF) with vacuum deposited electrodes were made into capacitors by conventional winding and fabrication techniques. These devices were used to identify and evaluate the performance characteristics offered by the PVDF in metallized film capacitors. Variations in capacitor parameters with temperature and frequence were evaluated and compared with other dielectric films. Their impact on capacitor applications is discussed.

High-Surface-Area Nitrogen-Doped Reduced Graphene Oxide for Electric Double-Layer Capacitors.

Science.gov (United States)

Youn, Hee-Chang; Bak, Seong-Min; Kim, Myeong-Seong; Jaye, Cherno; Fischer, Daniel A; Lee, Chang-Wook; Yang, Xiao-Qing; Roh, Kwang Chul; Kim, Kwang-Bum

2015-06-08

A two-step method consisting of solid-state microwave irradiation and heat treatment under NH3 gas was used to prepare nitrogen-doped reduced graphene oxide (N-RGO) with a high specific surface area (1007 m(2)  g(-1) ), high electrical conductivity (1532 S m(-1) ), and low oxygen content (1.5 wt %) for electrical double-layer capacitor applications. The specific capacitance of N-RGO was 291 F g(-1) at a current density of 1 A g(-1) , and a capacitance of 261 F g(-1) was retained at 50 A g(-1) , which indicated a very good rate capability. N-RGO also showed excellent cycling stability and preserved 96 % of the initial specific capacitance after 100 000 cycles. Near-edge X-ray absorption fine-structure spectroscopy results provided evidenced for the recovery of π conjugation in the carbon networks with the removal of oxygenated groups and revealed chemical bonding of the nitrogen atoms in N-RGO. The good electrochemical performance of N-RGO is attributed to its high surface area, high electrical conductivity, and low oxygen content. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Microscale electrostatic fractional capacitors using reduced graphene oxide percolated polymer composites

KAUST Repository

Elshurafa, Amro M.

2013-06-14

We show that graphene-percolated polymer composites exhibit fractional capacitance response in the frequency range of 50 kHz–2 MHz. In addition, it is shown that by varying the loading of graphene within the matrix from 2.5% to 12%, the phase can be controllably tuned from −67° to −31°, respectively. The electrostatic fractional capacitors proposed herein are easy to fabricate and offer integration capability on electronic printed circuit boards.

Gamma radiation in ceramic capacitors: a study for space missions

Science.gov (United States)

dos Santos Ferreira, Eduardo; Sarango Souza, Juliana

2017-10-01

We studied the real time effects of the gamma radiation in ceramic capacitors, in order to evaluate the effects of cosmic radiation on these devices. Space missions have electronic circuits with various types of devices, many studies have been done on semiconductor devices exposed to gamma radiation, but almost no studies for passive components, in particular ceramic capacitors. Commercially sold ceramic capacitors were exposed to gamma radiation, and the capacitance was measured before and after exposure. The results clearly show that the capacitance decreases with exposure to gamma radiation. We confirmed this observation in a real time capacitance measurement, obtained using a data logging system developed by us using the open source Arduino platform.

A measurement technique of time-dependent dielectric breakdown in MOS capacitors

Science.gov (United States)

Li, S. P.

1974-01-01

The statistical nature of time-dependent dielectric breakdown characteristics in MOS capacitors was evidenced by testing large numbers of capacitors fabricated on single wafers. A multipoint probe and automatic electronic visual display technique are introduced that will yield statistical results which are necessary for the investigation of temperature, electric field, thermal annealing, and radiation effects in the breakdown characteristics, and an interpretation of the physical mechanisms involved. It is shown that capacitors of area greater than 0.002 sq cm may yield worst-case results, and that a multipoint probe of capacitors of smaller sizes can be used to obtain a profile of nonuniformities in the SiO2 films.

Mutual capacitor and its applications

Directory of Open Access Journals (Sweden)

Chun Li

2014-06-01

Full Text Available This study presents a new ac circuit element – the mutual capacitor, being a dual of the mutual inductor, which is also a new ac transformer. This element is characteristic of the mutual-capacitance coupling of a multi-capacitance system. A unity-coupled mutual capacitor works as an ideal current or voltage transformer, and incidentally acts as waveform separating when inductor employed or waveform converting from square-wave to quasi-sine or waveform filtering, between ports. As a transformer, the mutual capacitor is easy to design, easy for heat cooling, more accurate for current or voltage transformation, dissipating less energy as well as saving materials, suitable for high-power and high-voltage applications. Experiments to demonstrate performances of unity-coupled mutual capacitors are also given.

High density energy storage capacitor

International Nuclear Information System (INIS)

Whitham, K.; Howland, M.M.; Hutzler, J.R.

1979-01-01

The Nova laser system will use 130 MJ of capacitive energy storage and have a peak power capability of 250,000 MW. This capacitor bank is a significant portion of the laser cost and requires a large portion of the physical facilities. In order to reduce the cost and volume required by the bank, the Laser Fusion Program funded contracts with three energy storage capacitor producers: Aerovox, G.E., and Maxwell Laboratories, to develop higher energy density, lower cost energy storage capacitors. This paper describes the designs which resulted from the Aerovox development contract, and specifically addresses the design and initial life testing of a 12.5 kJ, 22 kV capacitor with a density of 4.2 J/in 3 and a projected cost in the range of 5 cents per joule

The design and implementation of on-line monitoring system for UHV compact shunt capacitors

Science.gov (United States)

Tao, Weiliang; Ni, Xuefeng; Lin, Hao; Jiang, Shengbao

2017-08-01

Because of the large capacity and compact structure of the UHV compact shunt capacitor, it is difficult to take effective measures to detect and prevent the faults. If the fault capacitor fails to take timely maintenance, it will pose a threat to the safe operation of the system and the life safety of the maintenance personnel. The development of UHV compact shunt capacitor on-line monitoring system can detect and record the on-line operation information of UHV compact shunt capacitors, analyze and evaluate the early fault warning signs, find out the fault capacitor or the capacitor with fault symptom, to ensure safe and reliable operation of the system.

Metallized Film Capacitor Lifetime Evaluation and Failure Mode Analysis

CERN Document Server

Gallay, R.

2015-06-15

One of the main concerns for power electronic engineers regarding capacitors is to predict their remaining lifetime in order to anticipate costly failures or system unavailability. This may be achieved using a Weibull statistical law combined with acceleration factors for the temperature, the voltage, and the humidity. This paper discusses the different capacitor failure modes and their effects and consequences.

A novel technique to measure interface trap density in a GaAs MOS capacitor using time-varying magnetic fields

Energy Technology Data Exchange (ETDEWEB)

Choudhury, Aditya N. Roy, E-mail: aditya@physics.iisc.ernet.in; Venkataraman, V. [Dept. of Physics, Indian Institute of Science, Bangalore – 560012 (India)

2016-05-23

Interface trap density (D{sub it}) in a GaAs metal-oxide-semiconductor (MOS) capacitor can be measured electrically by measuring its impedance, i.e. by exciting it with a small signal voltage source and measuring the resulting current through the circuit. We propose a new method of measuring D{sub it} where the MOS capacitor is subjected to a (time-varying) magnetic field instead, which produces an effect equivalent to a (time-varying) voltage drop across the sample. This happens because the electron chemical potential of GaAs changes with a change in an externally applied magnetic field (unlike that of the gate metal); this is not the voltage induced by Faraday’s law of electromagnetic induction. So, by measuring the current through the MOS, D{sub it} can be found similarly. Energy band diagrams and equivalent circuits of a MOS capacitor are drawn in the presence of a magnetic field, and analyzed. The way in which a magnetic field affects a MOS structure is shown to be fundamentally different compared to an electrical voltage source.

Effect of electronic spatial extents (ESE) of ions on overpotential of lithium ion capacitors

International Nuclear Information System (INIS)

Xu, Fan; Lee, Chung ho; Koo, Chong Min; Jung, Cheolsoo

2014-01-01

Highlights: •Electronic spatial extent (ESE) of ion characterizes its electron density volume. •The ESE of ion proposes to assess overpotential of nanoporous capacitor. •Anion with low ESE shows low overpotential of the capacitor. •The ESE is more realistic to assess overpotential than conductivity or ion size. -- Abstract: The electronic spatial extent (ESE) of ions was defined as a major concept for assessing the cause of overpotential in the charging and discharging processes of a nanoporous activated carbon (AC) electrode. The performance degradation of AC/Li half-cells was caused by the overpotential, which was in discord with the electrolyte conductivity and ion size. Compared to the overpotential with the salt concentration, the AC/Li half-cell with a high concentration had a smaller overpotential, and its discharge patterns were similar to the curves obtained from the half-cells with a smaller ESE of BF 4 − ion. The ESE is a more realistic solution for determining the overpotential of the nanoporous capacitor, such as supercapacitor and Li ion capacitor, because its capacity is dependent on the electron density at the electric double layer of the capacitor electrode

Comb-Line Filter with Coupling Capacitor in Ground Plane

Directory of Open Access Journals (Sweden)

Toshiaki Kitamura

2011-01-01

Full Text Available A comb-line filter with a coupling capacitor in the ground plane is proposed. The filter consists of two quarter-wavelength microstrip resonators. A coupling capacitor is inserted into the ground plane in order to build strong coupling locally along the resonators. The filtering characteristics are investigated through numerical simulations as well as experiments. Filtering characteristics that have attenuation poles at both sides of the passband are obtained. The input susceptances of even and odd modes and coupling coefficients are discussed. The filters using stepped impedance resonators (SIRs are also discussed, and the effects of the coupling capacitor for an SIR structure are shown.

Nanostructure multilayer dielectric materials for capacitors and insulators

Science.gov (United States)

Barbee, Jr., Troy W.; Johnson, Gary W.

1998-04-21

A capacitor is formed of at least two metal conductors having a multilayer dielectric and opposite dielectric-conductor interface layers in between. The multilayer dielectric includes many alternating layers of amorphous zirconium oxide (ZrO.sub.2) and alumina (Al.sub.2 O.sub.3). The dielectric-conductor interface layers are engineered for increased voltage breakdown and extended service life. The local interfacial work function is increased to reduce charge injection and thus increase breakdown voltage. Proper material choices can prevent electrochemical reactions and diffusion between the conductor and dielectric. Physical vapor deposition is used to deposit the zirconium oxide (ZrO.sub.2) and alumina (Al.sub.2 O.sub.3) in alternating layers to form a nano-laminate.

Physical and Electrical Characterization of Polymer Aluminum Capacitors

Science.gov (United States)

Liu, David; Sampson, Michael J.

2010-01-01

Polymer aluminum capacitors from several manufacturers with various combinations of capacitance, rated voltage, and ESR values were physically examined and electrically characterized. The physical construction analysis of the capacitors revealed three different capacitor structures, i.e., traditional wound, stacked, and laminated. Electrical characterization results of polymer aluminum capacitors are reported for frequency-domain dielectric response at various temperatures, surge breakdown voltage, and other dielectric properties. The structure-property relations in polymer aluminum capacitors are discussed.

Physical and Electrical Characterization of Aluminum Polymer Capacitors

Science.gov (United States)

Liu, David; Sampson, Michael J.

2010-01-01

Polymer aluminum capacitors from several manufacturers with various combinations of capacitance, rated voltage, and ESR values were physically examined and electrically characterized. The physical construction analysis of the capacitors revealed three different capacitor structures, i.e., traditional wound, stacked, and laminated. Electrical characterization results of polymer aluminum capacitors are reported for frequency-domain dielectric response at various temperatures, surge breakdown voltage, and other dielectric properties. The structure-property relations in polymer aluminum capacitors are discussed.

Reliability assessment for metallized film pulse capacitors with accelerated degradation test

International Nuclear Information System (INIS)

Zhao Jianyin; Liu Fang; Xi Wenjun; He Shaobo; Wei Xiaofeng

2011-01-01

The high energy density self-healing metallized film pulse capacitor has been applied to all kinds of laser facilities for their power conditioning systems, whose reliability is straightforward affected by the reliability level of capacitors. Reliability analysis of highly reliable devices, such as metallized film capacitors, is a challenge due to cost and time restriction. Accelerated degradation test provides a way to predict its life cost and time effectively. A model and analyses for accelerated degradation data of metallized film capacitors are described. Also described is a method for estimating the distribution of failure time. The estimation values of the unknown parameters in this model are 9.066 9 x 10 -8 and 0.022 1. Both the failure probability density function (PDF) and the cumulative distribution function (CDF) can be presented by this degradation failure model. Based on these estimation values and the PDF/CDF, the reliability model of the metallized film capacitors is obtained. According to the reliability model, the probability of the capacitors surviving to 20 000 shot is 0.972 4. (authors)

Highly Selective and Sensitive Self-Powered Glucose Sensor Based on Capacitor Circuit.

Science.gov (United States)

Slaughter, Gymama; Kulkarni, Tanmay

2017-05-03

Enzymatic glucose biosensors are being developed to incorporate nanoscale materials with the biological recognition elements to assist in the rapid and sensitive detection of glucose. Here we present a highly sensitive and selective glucose sensor based on capacitor circuit that is capable of selectively sensing glucose while simultaneously powering a small microelectronic device. Multi-walled carbon nanotubes (MWCNTs) is chemically modified with pyrroloquinoline quinone glucose dehydrogenase (PQQ-GDH) and bilirubin oxidase (BOD) at anode and cathode, respectively, in the biofuel cell arrangement. The input voltage (as low as 0.25 V) from the biofuel cell is converted to a stepped-up power and charged to the capacitor to the voltage of 1.8 V. The frequency of the charge/discharge cycle of the capacitor corresponded to the oxidation of glucose. The biofuel cell structure-based glucose sensor synergizes the advantages of both the glucose biosensor and biofuel cell. In addition, this glucose sensor favored a very high selectivity towards glucose in the presence of competing and non-competing analytes. It exhibited unprecedented sensitivity of 37.66 Hz/mM.cm 2 and a linear range of 1 to 20 mM. This innovative self-powered glucose sensor opens new doors for implementation of biofuel cells and capacitor circuits for medical diagnosis and powering therapeutic devices.

Investigation on Capacitor Switching Transient Limiter with a Three phase Variable Resistance

DEFF Research Database (Denmark)

Naderi, Seyed Behzad; Jafari, Mehdi; Zandnia, Amir

2017-01-01

In this paper, a capacitor switching transient limiter based on a three phase variable resistance is proposed. The proposed structure eliminates the capacitor switching transient current and over-voltage by introducing a variable resistance to the current path with its special switching pattern...... transients on capacitor after bypassing. Analytic Analyses for this structure in transient cases are presented in details and simulations are performed by MATLAB software to prove its effectiveness....

A Simple, Successful Capacitor Lab

Science.gov (United States)

Ennis, William

2011-01-01

Capacitors are a fundamental component of modern electronics. They appear in myriad devices and in an enormous range of sizes. Although our students are taught the function and analysis of capacitors, few have the opportunity to use them in our labs.

Effect of grain alignment on interface trap density of thermally oxidized aligned-crystalline silicon films

Science.gov (United States)

Choi, Woong; Lee, Jung-Kun; Findikoglu, Alp T.

2006-12-01

The authors report studies of the effect of grain alignment on interface trap density of thermally oxidized aligned-crystalline silicon (ACSi) films by means of capacitance-voltage (C-V) measurements. C-V curves were measured on metal-oxide-semiconductor (MOS) capacitors fabricated on ⟨001⟩-oriented ACSi films on polycrystalline substrates. From high-frequency C-V curves, the authors calculated a decrease of interface trap density from 2×1012to1×1011cm-2eV-1 as the grain mosaic spread in ACSi films improved from 13.7° to 6.5°. These results demonstrate the effectiveness of grain alignment as a process technique to achieve significantly enhanced performance in small-grained (⩽1μm ) polycrystalline Si MOS-type devices.

Modeling of Structure Effect for Ferroelectric Capacitor Based on Poly(vinylidene fluoride-trifluoroethylene Ultrathin Films

Directory of Open Access Journals (Sweden)

Long Li

2017-12-01

Full Text Available The characteristics of ferroelectric capacitors with poly(vinylidene fluoride-trifluoroethlene (P(VDF-TrFE films have been studied at different structures of cell electrodes. It is suggested that the effect of electrode structures could induce changes of performance. Remarkably, cells with line electrodes display a better polarization and fatigue resistance than those with flat electrodes. For P(VDF-TrFE ultrathin films with different electrode structures, the models of charge compensation mechanism for depolarization field and domain fatigue decomposition are used to explain the effect of electrode structure. Furthermore, the driving voltage based on normal speed-functionality is designed, and the testing results show that the line electrode structure could induce a robust switching, which is determined by the free charges concentration in active layer. These findings provide an effective route to design the optimum structure for a ferroelectric capacitor based on P(VDF-TrFE copolymer ultrathin film.

Electrical characterization of thin film ferroelectric capacitors

NARCIS (Netherlands)

Tiggelman, M.P.J.; Reimann, K.; Klee, M.; Beelen, D.; Keur, W.; Schmitz, Jurriaan; Hueting, Raymond Josephus Engelbart

2006-01-01

Tunable capacitors can be used to facilitate the reduction of components in wireless technologies. The tunability of the capacitors is caused by the sensitivity of the relative dielectric constant to a change in polarization with electric field. Thin film ferroelectric MIM capacitors on silicon

Effect of short circuited DC link capacitor of an AC–DC–AC inverter on the performance of induction motor

Directory of Open Access Journals (Sweden)

Hadeed Ahmed Sher

2016-07-01

Full Text Available Induction motors are widely used in industrial power plants due to their robustness, reliability and high performance under variable operating conditions in the electrical power system. Modern industrial progress is dependent on these ruggedly constructed induction motors. Almost every sophisticated process of the industry is based on induction motors. Most of these motors are controlled by means of inverters that change the line frequency. The change in parameters of inverter makes it possible to control the motor according to the design requirements. The reliability of inverter based motor control is an important issue for industrial applications and therefore, it becomes very vital for design engineers to have comprehensive analysis of the inverter fed induction machine. This paper investigates one of the faults that may occur on the DC link of an inverter fed induction motor. The effect of the capacitor short circuit is presented in this paper. It also deals with the effects of short circuited capacitor on freewheeling diode. DC link capacitors are well designed and even the probability of capacitor failure is high, it is always a rare case if they puncture, however this analysis will add to the reliability of the induction machine under variable operating condition.

Wet thermal annealing effect on TaN/HfO2/Ge metal—oxide—semiconductor capacitors with and without a GeO2 passivation layer

International Nuclear Information System (INIS)

Liu Guan-Zhou; Li Cheng; Lu Chang-Bao; Tang Rui-Fan; Tang Meng-Rao; Wu Zheng; Yang Xu; Huang Wei; Lai Hong-Kai; Chen Song-Yan

2012-01-01

Wet thermal annealing effects on the properties of TaN/HfO 2 /Ge metal—oxide—semiconductor (MOS) structures with and without a GeO 2 passivation layer are investigated. The physical and the electrical properties are characterized by X-ray photoemission spectroscopy, high-resolution transmission electron microscopy, capacitance—voltage (C—V) and current—voltage characteristics. It is demonstrated that wet thermal annealing at relatively higher temperature such as 550 °C can lead to Ge incorporation in HfO 2 and the partial crystallization of HfO 2 , which should be responsible for the serious degradation of the electrical characteristics of the TaN/HfO 2 /Ge MOS capacitors. However, wet thermal annealing at 400 °C can decrease the GeO x interlayer thickness at the HfO 2 /Ge interface, resulting in a significant reduction of the interface states and a smaller effective oxide thickness, along with the introduction of a positive charge in the dielectrics due to the hydrolyzable property of GeO x in the wet ambient. The pre-growth of a thin GeO 2 passivation layer can effectively suppress the interface states and improve the C—V characteristics for the as-prepared HfO 2 gated Ge MOS capacitors, but it also dissembles the benefits of wet thermal annealing to a certain extent

Field-effect piezoresistors for vibration detection of nanobeams by using monolithically integrated MOS capacitors

International Nuclear Information System (INIS)

Cheng, Haitao; Yang, Heng; Li, XinXin; Wang, Yuelin

2013-01-01

A novel piezoresistive sensing method is presented herein for the detection of nanobeam resonator based on a monolithically integrated MOS (metal–oxide–semiconductor) capacitor structure. The bottom layer of the nanobeam located beneath the MOS capacitor is utilized as a piezoresistor for the detection of internal stress resulting from nanobeam deformation, and therefore the challenging process of ultra-shallow junction doping is avoided. When a bias voltage applied on the MOS gate exceeds the threshold, the depletion layer width is built up to the maximum, and the piezoresistive cancellation effect beside the neutral plane is eliminated. Based on a conventional microelectromechanical (MEMS) process, an MOS capacitor is fabricated at the terminal of a double-clamped nanobeam with dimensions of 46 µm × 7 µm × 149 nm. The measured R–V curve of this MOS structure presents a 64.7 nm thick piezoresistor which closely agrees with the design. This double-clamped nanobeam is excited into mechanical resonance by mounting it on a piezoelectric ceramic, and the amplitude–frequency response is measured by a network analyzer. The measured resonant frequency is 3.97 MHz and the quality (Q)-factor is 82 in atmosphere environment. Besides, this piezoresistive sensing method is verified by a laser-Doppler vibrometry. (paper)

Mechanistic interaction study of thin oxide dielectric with conducting organic electrode

International Nuclear Information System (INIS)

Sharma, Himani; Sethi, Kanika; Raj, P. Markondeya; Gerhardt, R.A.; Tummala, Rao

2012-01-01

Highlights: ► Thin film-oxide dielectric-organic electrode interface studies for investigating the leakage mechanism. ► XPS to elucidate chemical-structural changes on dielectric oxide surface. ► Correlates structural characterization data with capacitor leakage current and impedance spectroscopy characteristics. - Abstract: This paper aims at understanding the interaction of intrinsic conducting polymer, PEDT, with ALD-deposited Al 2 O 3 and thermally oxidized Ta 2 O 5 dielectrics, and the underlying mechanisms for increase in leakage currents in PEDT-based capacitors. Conducting polymers offer several advantages as electrodes for high surface area capacitors because of their lower resistance, self-healing and enhanced conformality. However, capacitors with in situ polymerized PEDT show poor electrical properties that are attributed to the interfacial interaction between the organic electrode and the oxide dielectric. This study focuses on characterizing these interactions. A combination of compositional, structural and electrical characterization techniques was applied to polymer-solid-state-capacitor to understand the interfacial chemical behavior and dielectric property deterioration of alumina and tantalum-oxide films. XPS and impedance studies were employed to understand the stiochiometric and compositional changes that occur in the dielectric film on interaction with in situ deposited PEDT. Based on the observations from several complimentary techniques, it is concluded that tantalum-pentoxide has more resistance towards chemical interaction with in situ polymerized PEDT. The thermally oxidized Ta 2 O 5 -PEDT system showed leakage current of 280 nA μF −1 at 3 V with a breakdown voltage of 30 V. On the other hand, Al 2 O 3 -PEDT capacitor showed leakage current of 50 μA μF −1 and a breakdown voltage of 40 V. The study reports direct evidence for the mechanism of resistivity drop in alumina dielectric with in situ polymerized PEDT electrode.

Physics of failure based analysis of aluminium electrolytic capacitor

International Nuclear Information System (INIS)

Sahoo, Satya Ranjan; Behera, S.K.; Kumar, Sachin; Varde, P.V.; Ravi Kumar, G.

2016-01-01

Electrolytic capacitors are one of the important devices in various power electronic systems, such as motor drives, uninterruptible power supply, electric vehicles and dc power supply. Electrolytic capacitors are also the integral part of many other electronic devices. One of the primary function of electrolytic capacitors is the smoothing of voltage ripple and storing electrical energy. However, the electrolytic capacitor has the shortest lifespan of components in power electronics. Past experiences show that electrolytic capacitor tends to degrade and fail faster under high electrical or thermal stress conditions during operations. The primary failure mechanism of an electrolytic capacitor is the evaporation of the electrolyte due to electrical or thermal overstress. This leads to the drift in the values of two important parameters-capacitance and equivalent series resistance (ESR) of the electrolytic capacitor. An attempt has been made to age the electrolytic capacitor and validate the results. The overall goal is to derive the accurate degradation model of the electrolytic capacitor. (author)

Integrated capacitor arrangement for ultrahigh capacitance values

NARCIS (Netherlands)

Roozeboom, F.; Klootwijk, J.H.; Kemmeren, A.L.A.M.; Reefman, D.; Verhoeven, J.F.C.M.

2011-01-01

An electronic device includes at least one trench capacitor that can also take the form of an inverse structure, a pillar capacitor. An alternating layer sequence of at least two dielectric layers and at least two electrically conductive layers is provided in the trench capacitor or on the pillar

Effect of Carbon Coating on Li4TiO12 of Anode Material for Hybrid Capacitor.

Science.gov (United States)

Lee, Jong-Kyu; Lee, Byung-Gwan; Yoon, Jung-Rag

2015-11-01

The carbon-coated Li4Ti5O12 of anode material for hybrid capacitor was prepared by controlling carbonization time at 700 degrees C in nitrogen. With increasing of carbonization time, the discharge capacity and capacitance were decreased, while the equivalent series resistance was not changed remarkably. The rate capability and cycle performance of carbon-coated Li4Ti5O12 were larger than that of Li4Ti5O12. Carbon coating improved conductivity as well as Li-ion diffusion, and thus also resulted in good rate capabilities and cycle stability. The effects of carbon coating on the gas generation of hybrid capacitor were also discussed.

Nanostructured core-shell electrode materials for electrochemical capacitors

Science.gov (United States)

Jiang, Long-bo; Yuan, Xing-zhong; Liang, Jie; Zhang, Jin; Wang, Hou; Zeng, Guang-ming

2016-11-01

Core-shell nanostructure represents a unique system for applications in electrochemical energy storage devices. Owing to the unique characteristics featuring high power delivery and long-term cycling stability, electrochemical capacitors (ECs) have emerged as one of the most attractive electrochemical storage systems since they can complement or even replace batteries in the energy storage field, especially when high power delivery or uptake is needed. This review aims to summarize recent progress on core-shell nanostructures for advanced supercapacitor applications in view of their hierarchical architecture which not only create the desired hierarchical porous channels, but also possess higher electrical conductivity and better structural mechanical stability. The core-shell nanostructures include carbon/carbon, carbon/metal oxide, carbon/conducting polymer, metal oxide/metal oxide, metal oxide/conducting polymer, conducting polymer/conducting polymer, and even more complex ternary core-shell nanoparticles. The preparation strategies, electrochemical performances, and structural stabilities of core-shell materials for ECs are summarized. The relationship between core-shell nanostructure and electrochemical performance is discussed in detail. In addition, the challenges and new trends in core-shell nanomaterials development have also been proposed.

Capacitor requirements for controlled thermonuclear experiments and reactors

International Nuclear Information System (INIS)

Boicourt, G.P.; Hoffman, P.S.

1975-01-01

Future controlled thermonuclear experiments as well as controlled thermonuclear reactors will require substantial numbers of capacitors. The demands on these units are likely to be quite severe and quite different from the normal demands placed on either present energy storage capacitors or present power factor correction capacitors. It is unlikely that these two types will suffice for all necessary Controlled Thermonuclear Research (CTR) applications. The types of capacitors required for the various CTR operating conditions are enumerated. Factors that influence the life, cost and operating abilities of these types of capacitors are discussed. The problems of capacitors in a radiation environment are considered. Areas are defined where future research is needed. Some directions that this research should take are suggested. (U.S.)

Capacitor requirements for controlled thermonuclear experiments and reactors

International Nuclear Information System (INIS)

Boicourt, G.P.; Hoffman, P.S.

1975-01-01

Future controlled thermonuclear experiments as well as controlled thermonuclear reactors will require substantial numbers of capacitors. The demands on these units are likely to be quite severe and quite different from the normal demands placed on either present energy storage capacitors or present power factor correction capacitors. It is unlikely that these two types will suffice for all necessary Controlled Thermonuclear Research (CTR) applications. The types of capacitors required for the various CTR operating conditions are enumerated. Factors that influence the life, cost and operating abilities of these types of capacitors are discussed. The problems of capacitors in a radiation environment are considered. Areas are defined where future research is needed. Some directions that this research should take are suggested

The application of structural nonlinearity in the development of linearly tunable MEMS capacitors

International Nuclear Information System (INIS)

Shavezipur, M; Khajepour, A; Hashemi, S M

2008-01-01

Electrostatically actuated parallel-plate tunable capacitors are the most desired MEMS capacitors because of their smaller sizes and higher Q-factors. However, these capacitors suffer from low tunability and exhibit high sensitivity near the pull-in voltage which counters the concept of tunability. In this paper, a novel design for parallel-plate tunable capacitors with high tunability and linear capacitance–voltage (C–V) response is developed. The design uses nonlinear structural rigidities to relieve intrinsic electrostatic nonlinearity in MEMS capacitors. Based on the force–displacement characteristic of an ideally linear capacitor, a real beam-like nonlinear spring model is developed. The variable stiffness coefficients of such springs improve the linearity of the C–V curve. Moreover, because the structural stiffness increases with deformations, the pull-in is delayed and higher tunability is achieved. Finite element simulations reveal that capacitors with air gaps larger than 4 µm and supporting beams thinner than 1 µm can generate highly linear C–V responses and tunabilities over 120%. Experimental results for capacitors fabricated by PolyMUMPs verify the effect of weak nonlinear geometric stiffness on improving the tunability for designs with a small air gap and relatively thick structural layers

A novel barium strontium titanate/nickel/titanium nitride/silicon structure for gigabit-scale DRAM capacitors

Science.gov (United States)

Ritums, Dwight Lenards

A materials system has been developed for advanced oxide high permittivity capacitors for use in Dynamic Random Access Memory (DRAM) applications. A capacitor test structure has been fabricated, demonstrating the integration of this materials system onto Si. It is a 3-D stacked electrode structure which uses the high-K dielectric material Ba1- xSrxTiO 3 (BST) and a novel Ni/TiN bottom electrode system. The structure was grown using pulsed laser deposition (PLD), photo-assisted metal-organic chemical vapor deposition (PhA-MOCVD), and electron beam deposition, and resulted in thin film capacitors with dielectric constants over 500. Other advanced oxides, principally SrVO3, were also investigated for use as electrode materials. The fabricated test structure is 3 μgm wide and 1 μm thick. RIE was used to generate the 3-D structure, and an etch gas recipe was developed to pattern the 3-D electrode structure onto the TiN. The Ni was deposited by electron beam deposition, and the BST was grown by PLD and PhA-MOCVD. Conformal coating of the electrode by the BST was achieved. The film structure was analyzed with XRD, SEM, EDS, XPS, AES, and AFM, and the electronic properties of the devices were characterized. Permittivites of up to 500 were seen in the PLD-grown films, and values up to 700 were seen in the MOCVD- deposited films. The proof of concept of a high permittivity material directly integrated onto Si has been demonstrated for this capacitor materials system. With further lithographic developments, this system can be applied toward gigabit device fabrication.

The Impact of HCl Precleaning and Sulfur Passivation on the Al2O3/Ge Interface in Ge Metal-Oxide-Semiconductor Capacitors

International Nuclear Information System (INIS)

Xue Bai-Qing; Chang Hu-Dong; Sun Bing; Wang Sheng-Kai; Liu Hong-Gang

2012-01-01

Surface treatment for Ge substrates using hydrogen chlorine cleaning and chemical passivation are investigated on AuTi/Al 2 O 3 /Ge metal-oxide-semiconductor capacitors. After hydrogen chlorine cleaning, a smooth Ge surface almost free from native oxide is demonstrated by atomic force microscopy and x-ray photoelectron spectroscopy observations. Passivation using a hydrogen chlorine solution is found to form a chlorine-terminated surface, while aqueous ammonium sulfide pretreatment results in a surface terminated by Ge-S bonding. Compared with chlorine-passivated samples, the sulfur-passivated ones show less frequency dispersion and better thermal stability based on capacitance-voltage characterizations. The samples with HCl pre-cleaning and (NH 4 ) 2 S passivation show less frequency dispersion than the HF pre-cleaning and (NH 4 ) 2 S passivated ones. The surface treatment process using hydrogen chlorine cleaning followed by aqueous ammonium sulfide passivation demonstrates a promising way to improve gate dielectric/Ge interface quality. (condensed matter: structure, mechanical and thermal properties)

Suspended graphene variable capacitor

OpenAIRE

AbdelGhany, M.; Mahvash, F.; Mukhopadhyay, M.; Favron, A.; Martel, R.; Siaj, M.; Szkopek, T.

2016-01-01

The tuning of electrical circuit resonance with a variable capacitor, or varactor, finds wide application with the most important being wireless telecommunication. We demonstrate an electromechanical graphene varactor, a variable capacitor wherein the capacitance is tuned by voltage controlled deflection of a dense array of suspended graphene membranes. The low flexural rigidity of graphene monolayers is exploited to achieve low actuation voltage in an ultra-thin structure. Large arrays compr...

Protection of large capacitor banks

International Nuclear Information System (INIS)

Sprott, J.C.; Lovell, T.W.

1982-06-01

Large capacitor banks, as used in many pulsed plasma experiments, are subject to catastrophic failure in the event of a short in the output or in an individual capacitor. Methods are described for protecting such banks to minimize the damage and down-time caused by such a failure

Capacitor discharges, magnetohydrodynamics, X-rays, ultrasonics

CERN Document Server

Früngel, Frank B A

1965-01-01

High Speed Pulse Technology, Volume 1: Capacitor Discharges - Magnetohydrodynamics - X-Rays - Ultrasonics deals with the theoretical and engineering problems that arise in the capacitor discharge technique.This book discusses the characteristics of dielectric material, symmetrical switch tubes with mercury filling, and compensation conductor forms. The transformed discharge for highest current peaks, ignition transformer for internal combustion engines, and X-ray irradiation of subjects in mechanical motion are also elaborated. This text likewise covers the transformed capacitor discharge in w

Method of manufacturing a shapeable short-resistant capacitor

Science.gov (United States)

Taylor, Ralph S.; Myers, John D.; Baney, William J.

2013-04-02

A method that employs a novel combination of conventional fabrication techniques provides a ceramic short-resistant capacitor that is bendable and/or shapeable to provide a multiple layer capacitor that is extremely compact and amenable to desirable geometries. The method allows thinner and more flexible ceramic capacitors to be made. The method includes forming a first thin metal layer on a substrate; depositing a thin, ceramic dielectric layer over the metal layer; depositing a second thin metal layer over the dielectric layer to form a capacitor exhibiting a benign failure mode; and separating the capacitor from the substrate. The method may also include bending the resulting capacitor into a serpentine arrangement with gaps between the layers that allow venting of evaporated electrode material in the event of a benign failure.

Capacitor blocks for linear transformer driver stages.

Science.gov (United States)

Kovalchuk, B M; Kharlov, A V; Kumpyak, E V; Smorudov, G V; Zherlitsyn, A A

2014-01-01

In the Linear Transformer Driver (LTD) technology, the low inductance energy storage components and switches are directly incorporated into the individual cavities (named stages) to generate a fast output voltage pulse, which is added along a vacuum coaxial line like in an inductive voltage adder. LTD stages with air insulation were recently developed, where air is used both as insulation in a primary side of the stages and as working gas in the LTD spark gap switches. A custom designed unit, referred to as a capacitor block, was developed for use as a main structural element of the transformer stages. The capacitor block incorporates two capacitors GA 35426 (40 nF, 100 kV) and multichannel multigap gas switch. Several modifications of the capacitor blocks were developed and tested on the life time and self breakdown probability. Blocks were tested both as separate units and in an assembly of capacitive module, consisting of five capacitor blocks. This paper presents detailed design of capacitor blocks, description of operation regimes, numerical simulation of electric field in the switches, and test results.

Three-dimensional vertical Si nanowire MOS capacitor model structure for the study of electrical versus geometrical Si nanowire characteristics

Science.gov (United States)

Hourdakis, E.; Casanova, A.; Larrieu, G.; Nassiopoulou, A. G.

2018-05-01

Three-dimensional (3D) Si surface nanostructuring is interesting towards increasing the capacitance density of a metal-oxidesemiconductor (MOS) capacitor, while keeping reduced footprint for miniaturization. Si nanowires (SiNWs) can be used in this respect. With the aim of understanding the electrical versus geometrical characteristics of such capacitors, we fabricated and studied a MOS capacitor with highly ordered arrays of vertical Si nanowires of different lengths and thermal silicon oxide dielectric, in comparison to similar flat MOS capacitors. The high homogeneity and ordering of the SiNWs allowed the determination of the single SiNW capacitance and intrinsic series resistance, as well as other electrical characteristics (density of interface states, flat-band voltage and leakage current) in relation to the geometrical characteristics of the SiNWs. The SiNW capacitors demonstrated increased capacitance density compared to the flat case, while maintaining a cutoff frequency above 1 MHz, much higher than in other reports in the literature. Finally, our model system has been shown to constitute an excellent platform for the study of SiNW capacitors with either grown or deposited dielectrics, as for example high-k dielectrics for further increasing the capacitance density. This will be the subject of future work.

Multilayer ceramic capacitors for pulsed power, high temperature applications

International Nuclear Information System (INIS)

Cygan, S.; McLarney, J.; Prymak, J.; Bohn, P.

1991-01-01

The performance of the multilayer ceramic capacitors (MLC) in high frequency power applications has improved significantly over the last years. One of the possible applications of MLC capacitors is the automotive industry where repetitive discharging of capacitors is required. A 0.25-μF capacitor using NPO dielectric subjected to repetitive discharging with the rate of 700 pulses per second, magnitude of 600-V and 195-A peak currents showed no degradation in performance at 298 K or 398 K even after 1 billion discharge cycles. Less than a 5-K temperature rise was observed under these conditions. The most exciting, newly emerging utilization for MLC capacitors, however, might be the high temperature application (up to 473 K for underhood utilization), where ceramic capacitors with higher volumetric efficiency as compared to glass or polymer type capacitors prove very superior. Moreover ceramic capacitors, which next to glass capacitors exhibit the greatest radiation resistance among all insulating materials (Hanks and Hamman 1971), might also be best suited in the future for high temperature operation in space environment. The pulsed power performance of the 0.25-μF NPO capacitor was evaluated under repetitive discharge conditions (200 V, 700 pps) at high temperature, 473 K, and the results are presented in this paper

Electric charging/discharging characteristics of super capacitor, using de-alloying and anodic oxidized Ti-Ni-Si amorphous alloy ribbons.

Science.gov (United States)

Fukuhara, Mikio; Sugawara, Kazuyuki

2014-01-01

Charging/discharging behaviors of de-alloyed and anodic oxidized Ti-Ni-Si amorphous alloy ribbons were measured as a function of current between 10 pA and 100 mA, using galvanostatic charge/discharging method. In sharp contrast to conventional electric double layer capacitor (EDLC), discharging behaviors for voltage under constant currents of 1, 10 and 100 mA after 1.8 ks charging at 100 mA show parabolic decrease, demonstrating direct electric storage without solvents. The supercapacitors, devices that store electric charge on their amorphous TiO2-x surfaces that contain many 70-nm sized cavities, show the Ragone plot which locates at lower energy density region near the 2nd cells, and RC constant of 800 s (at 1 mHz), which is 157,000 times larger than that (5 ms) in EDLC.

Low dielectric constant-based organic field-effect transistors and metal-insulator-semiconductor capacitors

Science.gov (United States)

Ukah, Ndubuisi Benjamin

This thesis describes a study of PFB and pentacene-based organic field-effect transistors (OFET) and metal-insulator-semiconductor (MIS) capacitors with low dielectric constant (k) poly(methyl methacrylate) (PMMA), poly(4-vinyl phenol) (PVP) and cross-linked PVP (c-PVP) gate dielectrics. A physical method -- matrix assisted pulsed laser evaporation (MAPLE) -- of fabricating all-polymer field-effect transistors and MIS capacitors that circumvents inherent polymer dissolution and solvent-selectivity problems, is demonstrated. Pentacene-based OFETs incorporating PMMA and PVP gate dielectrics usually have high operating voltages related to the thickness of the dielectric layer. Reduced PMMA layer thickness (≤ 70 nm) was obtained by dissolving the PMMA in propylene carbonate (PC). The resulting pentacene-based transistors exhibited very low operating voltage (below -3 V), minimal hysteresis in their transfer characteristics, and decent electrical performance. Also low voltage (within -2 V) operation using thin (≤ 80 nm) low-k and hydrophilic PVP and c-PVP dielectric layers obtained via dissolution in high dipole moment and high-k solvents -- PC and dimethyl sulfoxide (DMSO), is demonstrated to be a robust means of achieving improved electrical characteristics and high operational stability in OFETs incorporating PVP and c-PVP dielectrics.

New Temperature-Insensitive Electronically-Tunable Grounded Capacitor Simulator

OpenAIRE

Abuelma'atti, Muhammad Taher; Khan, Muhammad Haroon

1996-01-01

A new circuit for simulating a grounded capacitor is presented. The circuit uses one operationalamplifier (OA), three operational-transconductance amplifiers (OTAs), and one capacitor. The realized capacitor is temperature-insensitive and electronically tunable. Experimental results are included.

Electric field mapping inside metallized film capacitors

DEFF Research Database (Denmark)

Nielsen, Dennis Achton; Popok, Vladimir; Pedersen, Kjeld

2015-01-01

(s) they suffered from accelerated testing. We have prepared film capacitors for analysis by micro-sectioning and verified the quality of the preparation procedure using optical and atomic force microscopy. The potential distribution in the layer structure (alternating 7 µm thick dielectric and 50-100 nm thick...... and durability and serves as verification that failure- and degradation mechanisms remain the same at different stress levels during accelerated testing. In this work we have used Kelvin probe force microscopy (KPFM) to analyze metallized film capacitors with the purpose of determining the degradation mechanism...... metal) of a new capacitor was used as reference. KPFM measurements on the degraded capacitors showed a change in contact potential difference from -0.61V on the reference capacitor to 3.2V on the degraded ones, indicating that corrosion of the metallization had happened. Studies also showed that some...

Capacitor current feedback for output filter damping in switched-mode magnet power supplies

International Nuclear Information System (INIS)

Paven Kumar, M.R.; Kim, J.M.S.

1994-01-01

In magnet power supplies for a particle accelerator system, a second-order low-pass filter is used to reduce the output current ripple content within specifications. The output filter must be properly damped in order to avoid any large amplification at the resonant frequency and large transient responses of voltages and currents at the step change of the line voltage. Conventionally, a series combination of resistance and capacitance is added in parallel with the filter capacitor to provide the required damping. This approach, however, requires a large dc-blocking capacitor which has to be several times larger than the filter capacitor. In this paper, a filter damping technique using capacitor current feedback is presented. The basic concept of the capacitor current feedback is established using a linear model of the converter involved, and then a sampled-data model of the converter is used to analyze the filter damping technique. The filter damping effect of the capacitor current feedback is verified experimentally

Method of manufacturing a capacitor on a nanowire and integrated circuit having such a capacitor

NARCIS (Netherlands)

2009-01-01

A method of manufacturing a capacitor on a wafer, and an IC comprising such a capacitor is disclosed. The method comprises forming a plurality of vertical structures (140) each having a sub-micron thickness on the wafer; and growing a metal-insulator-metal (MIM) stack (150) over the plurality of

Manganese oxide electrochemical capacitor with potassium poly(acrylate) hydrogel electrolyte

Science.gov (United States)

Lee, Kuang-Tsin; Wu, Nae-Lih

An aqueous gel electrolyte has for the first time been successfully applied to the MnO 2· nH 2O-based pseudocapacitive electrochemical capacitors (ECs). The gel electrolyte is made of potassium poly(acrylate) (PAAK) polymer and aqueous solution of KCl. With the selected composition, PAAK:KCl:H 2O = 9.0%:6.7%:84.3% by weight, the gel shows no fluidity, possessing an ionic conductivity in the order of 10 -1 S cm -1. The gel electrolyte has been found to give substantially higher specific capacitances than those in the liquid electrolyte with the same salt (KCl) composition (1 M) and high power capability (>10 kW/kg).

Manganese oxide electrochemical capacitor with potassium poly(acrylate) hydrogel electrolyte

Energy Technology Data Exchange (ETDEWEB)

Lee, Kuang-Tsin; Wu, Nae-Lih [Department of Chemical Engineering, National Taiwan University, Taipei 106 (China)

2008-04-15

An aqueous gel electrolyte has for the first time been successfully applied to the MnO{sub 2}.nH{sub 2}O-based pseudocapacitive electrochemical capacitors (ECs). The gel electrolyte is made of potassium poly(acrylate) (PAAK) polymer and aqueous solution of KCl. With the selected composition, PAAK:KCl:H{sub 2}O = 9.0%:6.7%:84.3% by weight, the gel shows no fluidity, possessing an ionic conductivity in the order of 10{sup -1} S cm{sup -1}. The gel electrolyte has been found to give substantially higher specific capacitances than those in the liquid electrolyte with the same salt (KCl) composition (1 M) and high power capability (>10 kW/kg). (author)

Influence of Concentration and Electrodeposition Time on the Electrochemical Super capacitor Performance of Poly(3,4-Ethylenedioxy thiophene)/Graphene Oxide Hybrid Material

International Nuclear Information System (INIS)

Azman, N. H. N.; Lim, H. N.; Sulaiman, Y.; Lim, H. N.; Sulaiman, Y.

2016-01-01

Poly(3,4-ethylenedioxy thiophene)/graphene oxide (PEDOT/GO) composites with wrinkled paper-like sheets morphology were electro polymerized potentiostatically at 1.2 V with different electrodeposition times (1-30 min) and various concentrations of GO (0.5, 1.0, 1.5, and 2.0 mg/ml). The electrochemical properties of PEDOT/GO composites as an electrode material for super capacitor were investigated using cyclic voltammetry, electrochemical impedance spectroscopy (EIS), and galvanostatic charge-discharge (GCD). The CV results revealed that PEDOT/GO containing 1.0 mg/ml GO and electro polymerized for 10 minutes exhibited the highest specific capacitance (157.17 F/g). This optimum PEDOT/GO was found to have energy and power density of 18.24 W/kg and 496.64 Wh/kg, respectively, at 1.0 A/g current density. The resistance of charge transfer obtained for PEDOT/GO is very low (13.10 Ω) compared to PEDOT (638.98Ω), proving that PEDOT/GO has a good super capacitive performance due to the synergistic effect of the high conductivity of PEDOT and large surface area of GO

High power density capacitor and method of fabrication

Science.gov (United States)

Tuncer, Enis

2012-11-20

A ductile preform for making a drawn capacitor includes a plurality of electrically insulating, ductile insulator plates and a plurality of electrically conductive, ductile capacitor plates. Each insulator plate is stacked vertically on a respective capacitor plate and each capacitor plate is stacked on a corresponding insulator plate in alignment with only one edge so that other edges are not in alignment and so that each insulator plate extends beyond the other edges. One or more electrically insulating, ductile spacers are disposed in horizontal alignment with each capacitor plate along the other edges and the pattern is repeated so that alternating capacitor plates are stacked on alternating opposite edges of the insulator plates. A final insulator plate is positioned at an extremity of the preform. The preform may then be drawn to fuse the components and decrease the dimensions of the preform that are perpendicular to the direction of the draw.

Super capacitor modeling with artificial neural network (ANN)

Energy Technology Data Exchange (ETDEWEB)

Marie-Francoise, J.N.; Gualous, H.; Berthon, A. [Universite de Franche-Comte, Lab. en Electronique, Electrotechnique et Systemes (L2ES), UTBM, INRETS (LRE T31) 90 - Belfort (France)

2004-07-01

This paper presents super-capacitors modeling using Artificial Neural Network (ANN). The principle consists on a black box nonlinear multiple inputs single output (MISO) model. The system inputs are temperature and current, the output is the super-capacitor voltage. The learning and the validation of the ANN model from experimental charge and discharge of super-capacitor establish the relationship between inputs and output. The learning and the validation of the ANN model use experimental results of 2700 F, 3700 F and a super-capacitor pack. Once the network is trained, the ANN model can predict the super-capacitor behaviour with temperature variations. The update parameters of the ANN model are performed thanks to Levenberg-Marquardt method in order to minimize the error between the output of the system and the predicted output. The obtained results with the ANN model of super-capacitor and experimental ones are in good agreement. (authors)

Evaluation of Commercial Automotive-Grade BME Capacitors

Science.gov (United States)

Liu, Donhang

2014-01-01

Three Ni-BaTiO3 ceramic capacitor lots with the same specification (chip size, capacitance, and rated voltage) and the same reliability level, made by three different manufacturers, were degraded using highly accelerated life stress testing (HALST) with the same temperature and applied voltage conditions. The reliability, as characterized by mean time to failure (MTTF), differed by more than one order of magnitude among the capacitor lots. A theoretical model based on the existence of depletion layers at grain boundaries and the entrapment of oxygen vacancies has been proposed to explain the MTTF difference among these BME capacitors. It is the conclusion of this model that reliability will not be improved simply by increasing the insulation resistance of a BME capacitor. Indeed, Ni-BaTiO3 ceramic capacitors with a smaller degradation rate constant K will always give rise to a longer reliability life.

Reduction of operational amplifiers finite gain effects in switched-capacitor biquads

Directory of Open Access Journals (Sweden)

Radev Nikolay

2005-01-01

Full Text Available A combined approach for reducing the errors in the pole frequency f p, the pole Q - factor Qp and the magnitude at the pole frequency Hp, of switched capacitor biquads is presented. First, the conventional integrators in the biquads are replaced with gain-and offset-compensated integrators. Next, the errors Δ ƒp / ƒp, Δ Qp / Qp and Δ Hp / Hp are minimized by modifying three capacitances: two feedback capacitances and feed forward capacitance. The effectiveness of this approach is demonstrated by designing a band pass biquad.

Capacitance-voltage characteristics of MOS capacitors with Ge nanocrystals embedded in ZrO2 gate material

International Nuclear Information System (INIS)

Lee, Hye-Ryoung; Choi, Samjong; Cho, Kyoungah; Kim, Sangsig

2007-01-01

Capacitance versus voltage (C-V) curves of Ge-nanocrystals (NCs)-embedded metal-oxide-semiconductor (MOS) capacitors are characterized in this work. Ge NCs were formed in 20-nm thick ZrO 2 gate layers by ion implantation and subsequent annealing procedures. The formation of the Ge NCs in the ZrO 2 gate layers was confirmed by high-resolution transmission electron microscopy and energy dispersive spectroscopy. The C-V curves obtained from a representative MOS capacitor embedded with the Ge NCs exhibit a 3 V memory window as bias voltage varied from 9 to - 9 V and then back to the initial positive voltage, whereas MOS capacitors without Ge NCs show negligible memory windows at the same voltage range. This indicates the presence of charge storages in the Ge NCs. The counterclockwise hysteresis observed from the C-V curves implies that electrons are trapped in Ge NCs presented inside the ZrO 2 gate layer. And our experimental results obtained from capacitance versus time measurements show good retention characteristics of Ge-NCs-embedded MOS capacitors with ZrO 2 gate material for the application of NFGM

A quick method to determine the capacitance characteristics of thin layer X5R multilayer capacitors

NARCIS (Netherlands)

Mikkenie, R.; Steigelmann, O.; Groen, W.A.; ten Elshof, Johan E.

2012-01-01

The effect of Y2O3 concentration on the dielectric properties of ceramic disc capacitors and multilayer capacitors containing 50 dielectric layers with an approximate thickness of 3 μm were investigated. The relative permittivity and temperature coefficient of capacity of multilayer capacitors at

A quick method to determine the capacitance characteristics of thin layer X5R multilayer capacitors

NARCIS (Netherlands)

Mikkenie, R.; Steigelmann, O.; Groen, W.A.; Elshof, J.E. ten

2012-01-01

The effect of Y2O3 concentration on the dielectric properties of ceramic disc capacitors and multilayer capacitors containing 50 dielectric layers with an approximate thickness of 3µm were investigated. The relative permittivity and temperature coefficient of capacity of multilayer capacitors at low

Fringe Capacitance of a Parallel-Plate Capacitor.

Science.gov (United States)

Hale, D. P.

1978-01-01

Describes an experiment designed to measure the forces between charged parallel plates, and determines the relationship among the effective electrode area, the measured capacitance values, and the electrode spacing of a parallel plate capacitor. (GA)

2014 NEPP Tasks Update for Ceramic and Tantalum Capacitors

Science.gov (United States)

Teverovsky, Alexander A.

2014-01-01

Presentation describes recent development in research on MnO2, wet, and polymer tantalum capacitors. Low-voltage failures in multilayer ceramic capacitors and techniques to reveal precious metal electrode (PME) and base metal electrode (BME) capacitors with cracks are discussed. A voltage breakdown technique is suggested to select high quality low-voltage BME ceramic capacitors.

Physicochemical assessment criteria for high-voltage pulse capacitors

Energy Technology Data Exchange (ETDEWEB)

Darian, L. A., E-mail: LDarian@rambler.ru; Lam, L. Kh. [National Research University, Moscow Power Engineering Institute (Russian Federation)

2016-12-15

In the paper, the applicability of decomposition products of internal insulation of high-voltage pulse capacitors is considered (aging is the reason for decomposition products of internal insulation). Decomposition products of internal insulation of high-voltage pulse capacitors can be used to evaluate their quality when in operation and in service. There have been three generations of markers of aging of insulation as in the case with power transformers. The area of applicability of markers of aging of insulation for power transformers has been studied and the area can be extended to high-voltage pulse capacitors. The research reveals that there is a correlation between the components and quantities of markers of aging of the first generation (gaseous decomposition products of insulation) dissolved in insulating liquid and the remaining life of high-voltage pulse capacitors. The application of markers of aging to evaluate the remaining service life of high-voltage pulse capacitor is a promising direction of research, because the design of high-voltage pulse capacitors keeps stability of markers of aging of insulation in high-voltage pulse capacitors. It is necessary to continue gathering statistical data concerning development of markers of aging of the first generation. One should also carry out research aimed at estimation of the remaining life of capacitors using markers of the second and the third generation.

Physicochemical assessment criteria for high-voltage pulse capacitors

International Nuclear Information System (INIS)

Darian, L. A.; Lam, L. Kh.

2016-01-01

In the paper, the applicability of decomposition products of internal insulation of high-voltage pulse capacitors is considered (aging is the reason for decomposition products of internal insulation). Decomposition products of internal insulation of high-voltage pulse capacitors can be used to evaluate their quality when in operation and in service. There have been three generations of markers of aging of insulation as in the case with power transformers. The area of applicability of markers of aging of insulation for power transformers has been studied and the area can be extended to high-voltage pulse capacitors. The research reveals that there is a correlation between the components and quantities of markers of aging of the first generation (gaseous decomposition products of insulation) dissolved in insulating liquid and the remaining life of high-voltage pulse capacitors. The application of markers of aging to evaluate the remaining service life of high-voltage pulse capacitor is a promising direction of research, because the design of high-voltage pulse capacitors keeps stability of markers of aging of insulation in high-voltage pulse capacitors. It is necessary to continue gathering statistical data concerning development of markers of aging of the first generation. One should also carry out research aimed at estimation of the remaining life of capacitors using markers of the second and the third generation.

A compact 100 kV high voltage glycol capacitor.

Science.gov (United States)

Wang, Langning; Liu, Jinliang; Feng, Jiahuai

2015-01-01

A high voltage capacitor is described in this paper. The capacitor uses glycerol as energy storage medium, has a large capacitance close to 1 nF, can hold off voltages of up to 100 kV for μs charging time. Allowing for low inductance, the capacitor electrode is designed as coaxial structure, which is different from the common structure of the ceramic capacitor. With a steady capacitance at different frequencies and a high hold-off voltage of up to 100 kV, the glycol capacitor design provides a potential substitute for the ceramic capacitors in pulse-forming network modulator to generate high voltage pulses with a width longer than 100 ns.

Characterization of PZT Capacitor Structures with Various Electrode Materials Processed In-Situ Using AN Automated, Rotating Elemental Target, Ion Beam Deposition System

Science.gov (United States)

Gifford, Kenneth Douglas

Ferroelectric thin film capacitor structures containing lead zirconate titanate (PZT) as the dielectric, with the chemical formula Pb(rm Zr_{x }Ti_{1-x})O_3, were synthesized in-situ with an automated ion beam sputter deposition system. Platinum (Pt), conductive ruthenium oxide (RuO_2), and two types of Pt-RuO_2 hybrid electrodes were used as the electrode materials. The capacitor structures are characterized in terms of microstructure and electrical characteristics. Reduction or elimination of non-ferroelectric phases, that nucleate during PZT processing on Pt/TiO _2/MgO and RuO_2/MgO substrates, is achieved by reducing the thickness of the individually deposited layers and by interposing a buffer layer (~100-200A) of PbTiO _3 (PT) between the bottom electrode and the PZT film. Capacitor structures containing a Pt electrode exhibit poor fatigue resistance, irregardless of the PZT microstructure or the use of a PT buffer layer. From these results, and results from similar capacitors synthesized with sol-gel and laser ablation, PZT-based capacitor structures containing Pt electrodes are considered to be unsuitable for use in memory devices. Using a PT buffer layer, in capacitor structures containing RuO_2 top and bottom electrodes and polycrystalline, highly (101) oriented PZT, reduces or eliminates the nucleation of zirconium-titanium oxide, non-ferroelectric species at the bottom electrode interface during processing. This results in good fatigue resistance up to ~2times10^ {10} switching cycles. DC leakage current density vs. time measurements follow the Curie-von Schweidler law, J(t) ~ t^ {rm -n}. Identification of the high electric field current conduction mechanism is inconclusive. The good fatigue resistance, low dc leakage current, and excellent retention, qualifies the use of these capacitor structures in non-volatile random access (NVRAM) and dynamic random access (DRAM) memory devices. Excellent fatigue resistance (10% loss in remanent polarization up to

Simulation of electron transmittance and tunnel current in n{sup +} Poly-Si/HfSiO{sub x}N/Trap/SiO{sub 2}/Si(100) capacitors using analytical and numerical approaches

Energy Technology Data Exchange (ETDEWEB)

Noor, Fatimah A., E-mail: fatimah@fi.itb.ac.id; Iskandar, Ferry; Abdullah, Mikrajuddin; Khairurrijal [Physics of Electronic Materials Research Division Faculty of Mathematics and Natural Sciences, Institut Teknologi Bandung Jalan Ganesa 10, Bandung 40132 (Indonesia)

2015-04-16

In this paper, we discuss the electron transmittance and tunneling current in high-k-based-MOS capacitors with trapping charge by including the off-diagonal effective-mass tensor elements and the effect of coupling between transverse and longitudinal energies represented by an electron velocity in the gate. The HfSiO{sub x}N/SiO{sub 2} dual ultrathin layer is used as the gate oxide in an n{sup +} poly- Si/oxide/Si capacitor to replace SiO{sub 2}. The main problem of using HfSiO{sub x}N is the charge trapping formed at the HfSiO{sub x}N/SiO{sub 2} interface that can influence the performance of the device. Therefore, it is important to develop a model taking into account the presence of electron traps at the HfSiO{sub x}N/SiO{sub 2} interface in the electron transmittance and tunneling current. The transmittance and tunneling current in n{sup +} poly- Si/HfSiO{sub x}N/trap/SiO2/Si(100) capacitors are calculated by using Airy wavefunctions and a transfer matrix method (TMM) as analytical and numerical approaches, respectively. The transmittance and tunneling current obtained from the Airy wavefunction are compared to those computed by the TMM. The effects of the electron velocity on the transmittance and tunneling current are also discussed.

Stress effects of the inter-level dielectric layer on the ferroelectric performance of integrated SrBi2Ta2O9 capacitors

International Nuclear Information System (INIS)

Hong, Suk-Kyoung; Yang, B.; Oh, Sang Hyun; Kang, Young Min; Kang, Nam Soo; Hwang, Cheol Seong; Kwon, Oh Seong

2001-01-01

The thermal stress effects of the inter-level dielectric (ILD) layer on the ferroelectric performance of integrated Pt/SrBi 2 Ta 2 O 9 (SBT)/Pt capacitors were investigated. Two different thin film materials, pure SiO 2 grown at 650 degree C and B- and P-doped SiO 2 grown at 400 degree C by chemical vapor deposition techniques, were tested as an ILD layer. The ILD layer encapsulated the SBT capacitor array. During high temperature thermal cycling (up to 800 degree C) after ILD deposition, which is used for both densifying the ILD and curing of the various damage imposed on the SBT capacitors, a large thermal stress occurred in the bottom Pt layer due to the thermal expansion mismatch between the various layers. In particular, the pure SiO 2 ILD layer between the capacitors did not allow thermal expansion of the Pt layers, which led to a large accumulation of compressive stress in the layer. This resulted in hillock formation in the bottom Pt layer and eventual capacitor failure. However, the B- and P-doped SiO 2 ILD layer contracted during thermal cycling by removing residual impurities, which allowed greater expansion of the Pt layer. Therefore, compressive stress accumulation did not occur and excellent ferroelectric properties were thus obtained from the integrated capacitor array. [copyright] 2001 American Institute of Physics

A multi-level capacitor-less memory cell fabricated on a nano-scale strained silicon-on-insulator

International Nuclear Information System (INIS)

Park, Jea-Gun; Kim, Seong-Je; Shin, Mi-Hee; Song, Seung-Hyun; Shim, Tae-Hun; Chung, Sung-Woong; Enomoto, Hirofumi

2011-01-01

A multi-level capacitor-less memory cell was fabricated with a fully depleted n-metal-oxide-semiconductor field-effect transistor on a nano-scale strained silicon channel on insulator (FD sSOI n-MOSFET). The 0.73% biaxial tensile strain in the silicon channel of the FD sSOI n-MOSFET enhanced the effective electron mobility to ∼ 1.7 times that with an unstrained silicon channel. This thereby enables both front- and back-gate cell operations, demonstrating eight-level volatile memory-cell operation with a 1 ms retention time and 12 μA memory margin. This is a step toward achieving a terabit volatile memory cell.

Dielectric material options for integrated capacitors

NARCIS (Netherlands)

Ruhl, G.; Lehnert, W.; Lukosius, M.; Wenger, C.; Baristiran Kaynak, C.; Blomberg, T.; Haukka, S.; Baumann, P.K.; Besling, W.F.A.; Roest, A.L.; Riou, B.; Lhostis, S.; Halimaou, A.; Roozeboom, F.; Langereis, E.; Kessels, W.M.M.; Zauner, A.; Rushworth, S.A.

2014-01-01

Future MIM capacitor generations will require significantly increased specific capacitances by utilization of high-k dielectric materials. In order to achieve high capacitance per chip area, these dielectrics have to be deposited in three-dimensional capacitor structures by ALD or AVD (atomic vapor

A Cell-to-Cell Equalizer Based on Three-Resonant-State Switched-Capacitor Converters for Series-Connected Battery Strings

Directory of Open Access Journals (Sweden)

Yunlong Shang

2017-02-01

Full Text Available Due to the low cost, small size, and ease of control, the switched-capacitor (SC battery equalizers are promising among active balancing methods. However, it is difficult to achieve the full cell equalization for the SC equalizers due to the inevitable voltage drops across Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET switches. Moreover, when the voltage gap among cells is larger, the balancing efficiency is lower, while the balancing speed becomes slower as the voltage gap gets smaller. In order to soften these downsides, this paper proposes a cell-to-cell battery equalization topology with zero-current switching (ZCS and zero-voltage gap (ZVG among cells based on three-resonant-state SC converters. Based on the conventional inductor-capacitor (LC converter, an additional resonant path is built to release the charge of the capacitor into the inductor in each switching cycle, which lays the foundations for obtaining ZVG among cells, improves the balancing efficiency at a large voltage gap, and increases the balancing speed at a small voltage gap. A four-lithium-ion-cell prototype is applied to validate the theoretical analysis. Experiment results demonstrate that the proposed topology has good equalization performances with fast equalization, ZCS, and ZVG among cells.

Evaluation of gamma radiation response of electrolyte, MKP and MKT capacitors in various frequencies

International Nuclear Information System (INIS)

Malekie, Shahryar; Salehpour, Behrooz

2017-01-01

In this experimental work, the effect of gamma irradiation on the capacitance and impedance of some commercial capacitors namely electrolytic, MKP, and MKT capacitors in different radiation doses up to 120 kGy and a wide range of frequencies between 42 Hz and 5 MHz were studied. Results showed that the capacitances of the electrolytic capacitors exhibited a linear decrease by increasing the radiation dose and frequencies, which can be used for high dosimetry purposes, but non-ceramic capacitors as MKP and MKT showed much higher radiation resistance, particularly for the frequencies less than ∝1 MHz.

Evaluation of gamma radiation response of electrolyte, MKP and MKT capacitors in various frequencies

Energy Technology Data Exchange (ETDEWEB)

Malekie, Shahryar [Nuclear Science and Technology Research Institute, Karaj (Iran, Islamic Republic of). Radiation Application Research School; Salehpour, Behrooz [Tabriz Univ. (Iran, Islamic Republic of). Faculty of Physics

2017-09-01

In this experimental work, the effect of gamma irradiation on the capacitance and impedance of some commercial capacitors namely electrolytic, MKP, and MKT capacitors in different radiation doses up to 120 kGy and a wide range of frequencies between 42 Hz and 5 MHz were studied. Results showed that the capacitances of the electrolytic capacitors exhibited a linear decrease by increasing the radiation dose and frequencies, which can be used for high dosimetry purposes, but non-ceramic capacitors as MKP and MKT showed much higher radiation resistance, particularly for the frequencies less than ∝1 MHz.

NEPP Evaluation of Automotive Grade Tantalum Chip Capacitors

Science.gov (United States)

Sampson, Mike; Brusse, Jay

2018-01-01

Automotive grade tantalum (Ta) chip capacitors are available at lower cost with smaller physical size and higher volumetric efficiency compared to military/space grade capacitors. Designers of high reliability aerospace and military systems would like to take advantage of these attributes while maintaining the high standards for long-term reliable operation they are accustomed to when selecting military-qualified established reliability tantalum chip capacitors (e.g., MIL-PRF-55365). The objective for this evaluation was to assess the long-term performance of off-the-shelf automotive grade Ta chip capacitors (i.e., manufacturer self-qualified per AEC Q-200). Two (2) lots of case size D manganese dioxide (MnO2) cathode Ta chip capacitors from 1 manufacturer were evaluated. The evaluation consisted of construction analysis, basic electrical parameter characterization, extended long-term (2000 hours) life testing and some accelerated stress testing. Tests and acceptance criteria were based upon manufacturer datasheets and the Automotive Electronics Council's AEC Q-200 qualification specification for passive electronic components. As-received a few capacitors were marginally above the specified tolerance for capacitance and ESR. X-ray inspection found that the anodes for some devices may not be properly aligned within the molded encapsulation leaving less than 1 mil thickness of the encapsulation. This evaluation found that the long-term life performance of automotive grade Ta chip capacitors is generally within specification limits suggesting these capacitors may be suitable for some space applications.

Rough Electrode Creates Excess Capacitance in Thin-Film Capacitors.

Science.gov (United States)

Torabi, Solmaz; Cherry, Megan; Duijnstee, Elisabeth A; Le Corre, Vincent M; Qiu, Li; Hummelen, Jan C; Palasantzas, George; Koster, L Jan Anton

2017-08-16

The parallel-plate capacitor equation is widely used in contemporary material research for nanoscale applications and nanoelectronics. To apply this equation, flat and smooth electrodes are assumed for a capacitor. This essential assumption is often violated for thin-film capacitors because the formation of nanoscale roughness at the electrode interface is very probable for thin films grown via common deposition methods. In this work, we experimentally and theoretically show that the electrical capacitance of thin-film capacitors with realistic interface roughness is significantly larger than the value predicted by the parallel-plate capacitor equation. The degree of the deviation depends on the strength of the roughness, which is described by three roughness parameters for a self-affine fractal surface. By applying an extended parallel-plate capacitor equation that includes the roughness parameters of the electrode, we are able to calculate the excess capacitance of the electrode with weak roughness. Moreover, we introduce the roughness parameter limits for which the simple parallel-plate capacitor equation is sufficiently accurate for capacitors with one rough electrode. Our results imply that the interface roughness beyond the proposed limits cannot be dismissed unless the independence of the capacitance from the interface roughness is experimentally demonstrated. The practical protocols suggested in our work for the reliable use of the parallel-plate capacitor equation can be applied as general guidelines in various fields of interest.

Boron cross-linked graphene oxide/polyvinyl alcohol nanocomposite gel electrolyte for flexible solid-state electric double layer capacitor with high performance

KAUST Repository

Huang, Yi-Fu; Wu, Peng-Fei; Zhang, Ming-Qiu; Ruan, Wen-Hong; Giannelis, Emmanuel P.

2014-01-01

A new family of boron cross-linked graphene oxide/polyvinyl alcohol (GO-B-PVA) nanocomposite gels is prepared by freeze-thaw/boron cross-linking method. Then the gel electrolytes saturated with KOH solution are assembled into electric double layer capacitors (EDLCs). Structure, thermal and mechanical properties of GO-B-PVA are explored. The electrochemical properties of EDLCs using GO-B-PVA/KOH are investigated, and compared with those using GO-PVA/KOH gel or KOH solution electrolyte. FTIR shows that boron cross-links are introduced into GO-PVA, while the boronic structure inserted into agglomerated GO sheets is demonstrated by DMA analysis. The synergy effect of the GO and the boron crosslinking benefits for ionic conductivity due to unblocking ion channels, and for improvement of thermal stability and mechanical properties of the electrolytes. Higher specific capacitance and better cycle stability of EDLCs are obtained by using the GO-B-PVA/KOH electrolyte, especially the one at higher GO content. The nanocomposite gel electrolytes with excellent electrochemical properties and solid-like character are candidates for the industrial application in high-performance flexible solid-state EDLCs. © 2014 Elsevier Ltd.

Poly(vinylidene fluoride)/NH2-Treated Graphene Nanodot/Reduced Graphene Oxide Nanocomposites with Enhanced Dielectric Performance for Ultrahigh Energy Density Capacitor.

Science.gov (United States)

Cho, Sunghun; Lee, Jun Seop; Jang, Jyongsik

2015-05-13

This work describes a ternary nanocomposite system, composed of poly(vinylidene fluoride) (PVDF), NH2-treated graphene nanodots (GNDs), and reduced graphene oxides (RGOs), for use in high energy density capacitor. When the RGO sheets were added to PVDF matrix, the β-phase content of PVDF became higher than that of the pristine PVDF. The surface-treatment of GNDs with an ethylenediamine can promote the hydrogen bonding interactions between the GNDs and PVDF, which promote the formation of β-phase PVDF. This finding could be extended to combine the advantages of both RGO and NH2-treated GND for developing an effective and reliable means of preparing PVDF/NH2-treated GND/RGO nanocomposite. Relatively small amounts of NH2-treated GND/RGO cofillers (10 vol %) could make a great impact on the α → β phase transformation, dielectric, and ferroelectric properties of the ternary nanocomposite. The resulting PVDF/NH2-treated GND/RGO nanocomposite exhibited higher dielectric constant (ε' ≈ 60.6) and larger energy density (U(e) ≈ 14.1 J cm(-3)) compared with the pristine PVDF (ε' ≈ 11.6 and U(e) ≈ 1.8 J cm(-3)).

Boron cross-linked graphene oxide/polyvinyl alcohol nanocomposite gel electrolyte for flexible solid-state electric double layer capacitor with high performance

KAUST Repository

Huang, Yi-Fu

2014-06-01

A new family of boron cross-linked graphene oxide/polyvinyl alcohol (GO-B-PVA) nanocomposite gels is prepared by freeze-thaw/boron cross-linking method. Then the gel electrolytes saturated with KOH solution are assembled into electric double layer capacitors (EDLCs). Structure, thermal and mechanical properties of GO-B-PVA are explored. The electrochemical properties of EDLCs using GO-B-PVA/KOH are investigated, and compared with those using GO-PVA/KOH gel or KOH solution electrolyte. FTIR shows that boron cross-links are introduced into GO-PVA, while the boronic structure inserted into agglomerated GO sheets is demonstrated by DMA analysis. The synergy effect of the GO and the boron crosslinking benefits for ionic conductivity due to unblocking ion channels, and for improvement of thermal stability and mechanical properties of the electrolytes. Higher specific capacitance and better cycle stability of EDLCs are obtained by using the GO-B-PVA/KOH electrolyte, especially the one at higher GO content. The nanocomposite gel electrolytes with excellent electrochemical properties and solid-like character are candidates for the industrial application in high-performance flexible solid-state EDLCs. © 2014 Elsevier Ltd.

Comparison of electron transmittances and tunneling currents in an anisotropic TiNx/HfO2/SiO2/p-Si(100) metal-oxide-semiconductor (MOS) capacitor calculated using exponential- and Airy-wavefunction approaches and a transfer matrix method

International Nuclear Information System (INIS)

Noor, Fatimah A.; Abdullah, Mikrajuddin; Sukirno; Khairurrijal

2010-01-01

Analytical expressions of electron transmittance and tunneling current in an anisotropic TiN x /HfO 2 /SiO 2 /p-Si(100) metal-oxide-semiconductor (MOS) capacitor were derived by considering the coupling of transverse and longitudinal energies of an electron. Exponential and Airy wavefunctions were utilized to obtain the electron transmittance and the electron tunneling current. A transfer matrix method, as a numerical approach, was used as a benchmark to assess the analytical approaches. It was found that there is a similarity in the transmittances calculated among exponential- and Airy-wavefunction approaches and the TMM at low electron energies. However, for high energies, only the transmittance calculated by using the Airy-wavefunction approach is the same as that evaluated by the TMM. It was also found that only the tunneling currents calculated by using the Airy-wavefunction approach are the same as those obtained under the TMM for all range of oxide voltages. Therefore, a better analytical description for the tunneling phenomenon in the MOS capacitor is given by the Airy-wavefunction approach. Moreover, the tunneling current density decreases as the titanium concentration of the TiN x metal gate increases because the electron effective mass of TiN x decreases with increasing nitrogen concentration. In addition, the mass anisotropy cannot be neglected because the tunneling currents obtained under the isotropic and anisotropic masses are very different. (semiconductor devices)

Application of PFN capacitors in high power systems

International Nuclear Information System (INIS)

Parker, R.D.

1979-01-01

The application of lightweight reliable capacitors in a mobile energy store is discussed. The relationship of system design parameters to capacitor size and life is displayed. Electric fields and weights of a 21 J/lb and a 77 J/lb pulse discharge capacitor design are given. Estimates of future near-tern development are made

Infant-mortality testing of high-energy-density capacitors used on Nova

International Nuclear Information System (INIS)

Merritt, B.T.; Whitham, K.

1983-01-01

Nova is a solid-state large laser for inertial-confinement fusion research. Its flashlamps are driven by a 60-MJ capacitor bank. Part of this bank is being built with high-energy-density capacitors, 52-μF, 22 kV, 12.5 kJ. A total of 2645 of these capacitors have been purchased from two manufacturers. Each capacitor was infant-mortality tested. The first test consisted of a high-potential test, bushing-to-case, since these capacitors have dual bushings. Then the capacitors were discharged 500 times with circuit conditions approximating the capacitors normal flashlamp load. Failure of either of these tests or if the capacitor was leaking was cause for rejection

Shapeable short circuit resistant capacitor

Science.gov (United States)

Taylor, Ralph S.; Myers, John D.; Baney, William J.

2015-10-06

A ceramic short circuit resistant capacitor that is bendable and/or shapeable to provide a multiple layer capacitor that is extremely compact and amenable to desirable geometries. The capacitor that exhibits a benign failure mode in which a multitude of discrete failure events result in a gradual loss of capacitance. Each event is a localized event in which localized heating causes an adjacent portion of one or both of the electrodes to vaporize, physically cleaning away electrode material from the failure site. A first metal electrode, a second metal electrode, and a ceramic dielectric layer between the electrodes are thin enough to be formed in a serpentine-arrangement with gaps between the first electrode and the second electrode that allow venting of vaporized electrode material in the event of a benign failure.

Capacitor Monitoring for Modular Multilevel Converters

DEFF Research Database (Denmark)

Deng, Fujin; Liu, Dong; Wang, Yanbo

2017-01-01

). The capacitor monitoring in each SM of the MMC is an important issue, which would affect the performance of the MMC. This paper proposed an effective monitoring method for the capacitance in each SM of the MMC. The proposed method reveals the relationship between the arm average capacitance and the capacitance...

A frequency output ferroelectric phase PNZT capacitor-based temperature sensor

KAUST Repository

Khan, Naveed

2016-09-05

In this paper, a frequency output temperature sensor based on a 4% Niobium doped 20/80 Zr/Ti Lead Zirconate Titanate (PNZT) capacitor is proposed. The sensor capacitance vs temperature and capacitance vs voltage characteristics are experimentally measured below the Curie temperature of the ferroelectric capacitor. The capacitance of the 20/80 (Zr/Ti) composition PNZT capacitor changes by 29% for a temperature change from 10°C to 100°C, which translates to 0.32%/°C temperature sensitivity. The measured sensor characteristics show less than ∼0.7°C deviation from the ideal linear response. A Wien bridge oscillator based temperature sensor is demonstrated based on the PNZT capacitors. Mathematical analysis for the effect of the op-amp finite unity-gain frequency on the sensor circuit oscillation frequency is provided. The experimentally realized frequency output temperature sensor shows -17.6% relative frequency change for a temperature change from 10°C to 100°C. The proposed capacitive temperature sensor can be used in low-power smart sensor nodes without the need for extensive calibration. © 2015 IEEE.

Graphene-Based Flexible and Transparent Tunable Capacitors.

Science.gov (United States)

Man, Baoyuan; Xu, Shicai; Jiang, Shouzheng; Liu, Aihua; Gao, Shoubao; Zhang, Chao; Qiu, Hengwei; Li, Zhen

2015-12-01

We report a kind of electric field tunable transparent and flexible capacitor with the structure of graphene-Bi1.5MgNb1.5O7 (BMN)-graphene. The graphene films with low sheet resistance were grown by chemical vapor deposition. The BMN thin films were fabricated on graphene by using laser molecular beam epitaxy technology. Compared to BMN films grown on Au, the samples on graphene substrates show better quality in terms of crystallinity, surface morphology, leakage current, and loss tangent. By transferring another graphene layer, we fabricated flexible and transparent capacitors with the structure of graphene-BMN-graphene. The capacitors show a large dielectric constant of 113 with high dielectric tunability of ~40.7 % at a bias field of 1.0 MV/cm. Also, the capacitor can work stably in the high bending condition with curvature radii as low as 10 mm. This flexible film capacitor has a high optical transparency of ~90 % in the visible light region, demonstrating their potential application for a wide range of flexible electronic devices.

Carbons, ionic liquids and quinones for electrochemical capacitors

Directory of Open Access Journals (Sweden)

Raul eDiaz

2016-04-01

Full Text Available Carbons are the main electrode materials used in electrochemical capacitors, which are electrochemical energy storage devices with high power densities and long cycling lifetimes. However, increasing their energy density will improve their potential for commercial implementation. In this regard, the use of high surface area carbons and high voltage electrolytes are well known strategies to increase the attainable energy density, and lately ionic liquids have been explored as promising alternatives to current state of the art acetonitrile-based electrolytes. Also, in terms of safety and sustainability ionic liquids are attractive electrolyte materials for electrochemical capacitors. In addition, it has been shown that the matching of the carbon pore size with the electrolyte ion size further increases the attainable electric double layer (EDL capacitance and energy density.The use of pseudocapacitive reactions can significantly increase the attainable energy density, and quinonic-based materials offer a potentially sustainable and cost effective research avenue for both the electrode and the electrolyte. This perspective will provide an overview of the current state of the art research on electrochemical capacitors based on combinations of carbons, ionic liquids and quinonic compounds, highlighting performances and challenges and discussing possible future research avenues. In this regard, current interest is mainly focused on strategies which may ultimately lead to commercially competitive sustainable high performance electrochemical capacitors for different applications including those requiring mechanical flexibility and biocompatibility.

Switchable capacitor

NARCIS (Netherlands)

Rottenberg, Xavier; Jansen, Henricus V.; Tilmans, H.A.C.; Tilmans, Hendrikus; De Raedt, Walter

2011-01-01

A micro electromechanical switchable capacitor is disclosed, comprising a substrate, a bottom elecrode, a dielaectric layer deposited on at least part of sai bottum electrode, a conductive floating electrode deposited on at least part of said dielectric layer, an armature positioned proximate to the

Switchable capacitor

NARCIS (Netherlands)

Rottenberg, X.; Jansen, Henricus V.; Tilmans, H.A.C.; De Raedt, W.

2003-01-01

A micro electromechanical switchable capacitor is disclosed, comprising a substrate, a bottom elecrode, a dielaectric layer deposited on at least part of sai bottum electrode, a conductive floating electrode deposited on at least part of said dielectric layer, an armature positioned proximate to the

Humidity Testing of PME and BME Ceramic Capacitors with Cracks

Science.gov (United States)

Teverovsky, Alexander A.; Herzberger, Jaemi

2014-01-01

Cracks in ceramic capacitors are one of the major causes of failures during operation of electronic systems. Humidity testing has been successfully used for many years to verify the absence of cracks and assure quality of military grade capacitors. Traditionally, only precious metal electrode (PME) capacitors were used in high reliability applications and the existing requirements for humidity testing were developed for this type of parts. With the advance of base metal electrode (BME) capacitors, there is a need for assessment of the applicability of the existing techniques for the new technology capacitors. In this work, variety of different PME and BME capacitors with introduced cracks were tested in humid environments at different voltages and temperatures. Analysis of the test results indicates differences in the behavior and failure mechanisms for BME and PME capacitors and the need for different testing conditions.

Alternating current line-filter based on electrochemical capacitor utilizing template-patterned graphene

OpenAIRE

Zhenkun Wu; Liyi Li; Ziyin Lin; Bo Song; Zhuo Li; Kyoung-Sik Moon; Ching-Ping Wong; Shu-Lin Bai

2015-01-01

Aluminum electrolytic capacitors (AECs) are widely used for alternating current (ac) line-filtering. However, their bulky size is becoming more and more incompatible with the rapid development of portable electronics. Here we report a scalable process to fabricate miniaturized graphene-based ac line-filters on flexible substrates at room temperature. In this work, graphene oxide (GO) is reduced by patterned metal interdigits at room temperature and used directly as the electrode material. The...

Applications of Silver Nanowires on Transparent Conducting Film and Electrode of Electrochemical Capacitor

Directory of Open Access Journals (Sweden)

Yuan-Jun Song

2014-01-01

Full Text Available Silver nanowire has potential applications on transparent conducting film and electrode of electrochemical capacitor due to its excellent conductivity. Transparent conducting film (G-film was prepared by coating silver nanowires on glass substrate using Meyer rod method, which exhibited better performance than carbon nanotube and graphene. The conductivity of G-film can be improved by increasing sintering temperature. Electrode of electrochemical capacitor (I-film was fabricated through the same method with G-film on indium tin oxide (ITO. CV curves of I-film under different scanning rates had obvious redox peaks, which indicated that I-film exhibited excellent electrochemical pseudocapacitance performance and good reversibility during charge/discharge process. In addition, the specific capacitance of I-film was measured by galvanostatic charge/discharge experiments, indicating that I-film exhibits high special capacitance and excellent electrochemical stability.

Effects of post-deposition oxygen annealing on tuning properties of Ba0.8Sr0.2TiO3 thin-film capacitors for microwave integrated circuits

International Nuclear Information System (INIS)

Liu, Y.R.; Lai, P.T.; Li, G.Q.; Li, B.; Peng, J.B.; Lo, H.B.

2005-01-01

Barium strontium titanate (BST) thin-films deposited on a SiO 2 /Si substrate by argon ion-beam sputtering technique were annealed at 400, 500 and 600 deg. C in oxygen for 30 min, respectively, and were used to fabricate integrated parallel-plate capacitors by standard integrated-circuit technology. These capacitors can achieve tunability greater than 60% at an applied dc voltage of 2 V and a frequency of 100 kHz at room temperature. Considering tunability, loss factor and hysteresis effect, the BST thin-film annealed at 500 deg. C is superior for making tunable microwave integrated capacitors. The effects of annealing treatment in oxygen on the tuning properties of the thin-film capacitors are analyzed, and the results indicate that the tunability is strongly dependent on both oxygen vacancies and negatively charged oxygen, trapped at the grain boundary and/or at the electrode/dielectric interface

Fast risetime one megajoule capacitor bank

International Nuclear Information System (INIS)

Markins, D.; Baker, W.L.; Reinovsky, R.E.; Clark, J.G.

1976-01-01

A 100 kV, 1.1 MJ capacitor bank for plasma research experiments has been constructed for the Air Force Weapons Laboratory. The system consists of twenty, individual, low inductance capacitor modules, each utilizing a four element switch package approximately 2 meters wide. Each module contains twenty-four ''scyllac'' type 1.85 μF capacitors. A 100 kV output pulse is obtained by charging the top half of each module to +50 kV and the bottom half to -50 kV. A pressurized, low inductance multichannel switch package incorporating four separately triggered elements is designed to fit into the parallel plate transmission line system of the capacitor module. The bank is configured in a cross shape with twenty modules spaced uniformly around the perimeter of a parallel plate transmission line. The transmission line is constructed with 32 mil aluminum and insulated with 60 mils of mylar. The bank is designed to feed an easily replaceable central coaxial load. The entire system has been repeatedly fired at 100 kV with a dummy resistive load and has delivered 2.2 x 10 7 amperes of current with a risetime of 1.1 μsec. The total measured system inductance is 2.2 nH. This system represents a significant advance in the development of reliable, fast, high current capacitor banks

A 800 kV compact peaking capacitor for nanosecond generator.

Science.gov (United States)

Jia, Wei; Chen, Zhiqiang; Tang, Junping; Chen, Weiqing; Guo, Fan; Sun, Fengrong; Li, Junna; Qiu, Aici

2014-09-01

An extremely compact high voltage peaking capacitor is developed. The capacitor has a pancake structure with a diameter of 315 mm, a thickness of 59 mm, and a mass of 6.1 kg. The novel structural design endows the capacitor with a better mechanical stability and reliability under hundreds of kilovolts pulse voltage and an inner gas pressure of more than 1.5 MPa. The theoretical value of the capacitor self-inductance is near to 17 nH. Proved by series of electrical experiments, the capacitor can endure a high-voltage pulse with a rise time of about 20 ns, a half-width duration of around 25 ns, and an amplitude of up to 800 kV in a single shot model. When the capacitor was used in an electromagnetic pulse simulator as a peaking capacitor, the rise time of the voltage pulse can be reduced from 20 ns to less than 3 ns. The practical value of the capacitor's inductance deduced from the experimental date is no more than 25 nH.

A Power-Efficient Wireless Capacitor Charging System Through an Inductive Link.

Science.gov (United States)

Lee, Hyung-Min; Ghovanloo, Maysam

2013-10-01

A power-efficient wireless capacitor charging system for inductively powered applications has been presented. A bank of capacitors can be directly charged from an ac source by generating a current through a series charge injection capacitor and a capacitor charger circuit. The fixed charging current reduces energy loss in switches, while maximizing the charging efficiency. An adaptive capacitor tuner compensates for the resonant capacitance variations during charging to keep the amplitude of the ac input voltage at its peak. We have fabricated the capacitor charging system prototype in a 0.35- μ m 4-metal 2-poly standard CMOS process in 2.1 mm 2 of chip area. It can charge four pairs of capacitors sequentially. While receiving 2.7-V peak ac input through a 2-MHz inductive link, the capacitor charging system can charge each pair of 1 μ F capacitors up to ±2 V in 420 μ s, achieving a high measured charging efficiency of 82%.

Random Vibration Testing of Advanced Wet Tantalum Capacitors

Science.gov (United States)

Teverovsky, Alexander

2015-01-01

Advanced wet tantalum capacitors allow for improved performance of power supply systems along with substantial reduction of size and weight of the systems that is especially beneficial for space electronics. Due to launch-related stresses, acceptance testing of all space systems includes random vibration test (RVT). However, many types of advanced wet tantalum capacitors cannot pass consistently RVT at conditions specified in MIL-PRF-39006, which impedes their use in space projects. This requires a closer look at the existing requirements, modes and mechanisms of failures, specifics of test conditions, and acceptance criteria. In this work, different lots of advanced wet tantalum capacitors from four manufacturers have been tested at step stress random vibration conditions while their currents were monitored before, during, and after the testing. It has been shown that the robustness of the parts and their reliability are mostly due to effective self-healing processes and limited current spiking or minor scintillations caused by RVT do not increase the risk of failures during operation. A simple model for scintillations events has been used to simulate current spiking during RVT and optimize test conditions. The significance of scintillations and possible effects of gas generation have been discussed and test acceptance criteria for limited current spiking have been suggested.

A study of nitroxide polyradical/activated carbon composite as the positive electrode material for electrochemical hybrid capacitor

Energy Technology Data Exchange (ETDEWEB)

Li, Hui-qiao; Zou, Ying; Xia, Yong-yao [Chemistry Department and Shanghai Key Laboratory of Molecular Catalysis and Innovative Materials, Fudan University, Shanghai 200433 (China)

2007-01-01

We present a new concept of the hybrid electrochemical capacitor technology in which a poly(2,2,6,6-tetramethylpiperidinyloxy methacrylate) nitroxide polyradical/activated carbon composite (PTMA-AC) is used as the positive electrode material and activated carbon is used as the negative electrode material. On the positive electrode, both reversible reduction and oxidation of nitroxide polyradical and non-faradic ion sorption/de-sorption of activated carbon are involved during charge and discharge process. The capacity of the composite electrode is 30% larger than that of the pure activated carbon electrode. A hybrid capacitor fabricated by the PTMA-AC composite positive electrode and the activated carbon negative electrode shows a good cycling life, it can be charged/discharged for over 1000 cycles with slight capacity loss. The hybrid capacitor also has a good rate capability, it maintains 80% of the initial capacity even at the high discharge current of up to 20C. (author)

Development of High Temperature Capacitor Technology and Manufacturing Capability

Energy Technology Data Exchange (ETDEWEB)

None, None

2011-05-15

The goal of the Development of High Temperature Capacitor Technology and Manufacturing Capability program was to mature a production-ready supply chain for reliable 250°C FPE (fluorinated polyester) film capacitors by 2011. These high-temperature film capacitors enable both the down hole drilling and aerospace industries by enabling a variety of benefits including: - Deeper oil exploration in higher temperature and pressure environments - Enabling power electronic and control equipment to operate in higher temperature environments - Enabling reduced cooling requirements of electronics - Increasing reliability and life of capacitors operating below rated temperature - Enabling capacitors to handle higher electrical losses without overheating. The key challenges to bringing the FPE film capacitors to market have been manufacturing challenges including: - FPE Film is difficult to handle and wind, resulting in poor yields - Voltage breakdown strength decreases when the film is wound into capacitors (~70% decrease) - Encapsulation technologies must be improved to enable higher perature operation - Manufacturing and test cycle time is very long As a direct result of this program most of the manufacturing challenges have been met. The FPE film production metalization and winding yield has increased to over 82% from 70%, and the voltage breakdown strength of the wound capacitors has increased 270% to 189 V/μm. The high temperature packaging concepts are showing significant progress including promising results for lead attachments and hermetic packages at 200°C and non-hermetic packages at 250°C. Manufacturing and test cycle time will decrease as the market for FPE capacitors develops.

PLZT capacitor on glass substrate

Science.gov (United States)

Fairchild, M. Ray; Taylor, Ralph S.; Berlin, Carl W.; Wong, Celine W. K.; Ma, Beihai; Balachandran, Uthamalingam

2016-01-05

A lead-lanthanum-zirconium-titanate (PLZT) capacitor on a substrate formed of glass. The first metallization layer is deposited on a top side of the substrate to form a first electrode. The dielectric layer of PLZT is deposited over the first metallization layer. The second metallization layer deposited over the dielectric layer to form a second electrode. The glass substrate is advantageous as glass is compatible with an annealing process used to form the capacitor.

Observation of turnover of spontaneous polarization in ferroelectric layer of pentacene/poly-(vinylidene-trifluoroethylene) double-layer capacitor under photo illumination by optical second-harmonic generation measurement

Energy Technology Data Exchange (ETDEWEB)

Shi, Zhemin [State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Technology, Tsinghua University, Beijing 100084 (China); Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152-8552 (Japan); Taguchi, Dai; Manaka, Takaaki; Iwamoto, Mitsumasa, E-mail: iwamoto@pe.titech.ac.jp [Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152-8552 (Japan)

2016-04-28

The details of turnover process of spontaneous polarization and associated carrier motions in indium-tin oxide/poly-(vinylidene-trifluoroethylene)/pentacene/Au capacitor were analyzed by coupling displacement current measurement (DCM) and electric-field-induced optical second-harmonic generation (EFISHG) measurement. A model was set up from DCM results to depict the relationship between electric field in semiconductor layer and applied external voltage, proving that photo illumination effect on the spontaneous polarization process lied in variation of semiconductor conductivity. The EFISHG measurement directly and selectively probed the electric field distribution in semiconductor layer, modifying the model and revealing detailed carrier behaviors involving photo illumination effect, dipole reversal, and interfacial charging in the device. A further decrease of DCM current in the low voltage region under illumination was found as the result of illumination effect, and the result was argued based on the changing of the total capacitance of the double-layer capacitors.

Observation of turnover of spontaneous polarization in ferroelectric layer of pentacene/poly-(vinylidene-trifluoroethylene) double-layer capacitor under photo illumination by optical second-harmonic generation measurement

Science.gov (United States)

Shi, Zhemin; Taguchi, Dai; Manaka, Takaaki; Iwamoto, Mitsumasa

2016-04-01

The details of turnover process of spontaneous polarization and associated carrier motions in indium-tin oxide/poly-(vinylidene-trifluoroethylene)/pentacene/Au capacitor were analyzed by coupling displacement current measurement (DCM) and electric-field-induced optical second-harmonic generation (EFISHG) measurement. A model was set up from DCM results to depict the relationship between electric field in semiconductor layer and applied external voltage, proving that photo illumination effect on the spontaneous polarization process lied in variation of semiconductor conductivity. The EFISHG measurement directly and selectively probed the electric field distribution in semiconductor layer, modifying the model and revealing detailed carrier behaviors involving photo illumination effect, dipole reversal, and interfacial charging in the device. A further decrease of DCM current in the low voltage region under illumination was found as the result of illumination effect, and the result was argued based on the changing of the total capacitance of the double-layer capacitors.

BioCapacitor: A novel principle for biosensors.

Science.gov (United States)

Sode, Koji; Yamazaki, Tomohiko; Lee, Inyoung; Hanashi, Takuya; Tsugawa, Wakako

2016-02-15

Studies regarding biofuel cells utilizing biocatalysts such as enzymes and microorganisms as electrocatalysts have been vigorously conducted over the last two decades. Because of their environmental safety and sustainability, biofuel cells are expected to be used as clean power generators. Among several principles of biofuel cells, enzyme fuel cells have attracted significant attention for their use as alternative energy sources for future implantable devices, such as implantable insulin pumps and glucose sensors in artificial pancreas and pacemakers. However, the inherent issue of the biofuel cell principle is the low power of a single biofuel cell. The theoretical voltage of biofuel cells is limited by the redox potential of cofactors and/or mediators employed in the anode and cathode, which are inadequate for operating any devices used for biomedical application. These limitations inspired us to develop a novel biodevice based on an enzyme fuel cell that generates sufficient stable power to operate electric devices, designated "BioCapacitor." To increase voltage, the enzyme fuel cell is connected to a charge pump. To obtain a sufficient power and voltage to operate an electric device, a capacitor is used to store the potential generated by the charge pump. Using the combination of a charge pump and capacitor with an enzyme fuel cell, high voltages with sufficient temporary currents to operate an electric device were generated without changing the design and construction of the enzyme fuel cell. In this review, the BioCapacitor principle is described. The three different representative categories of biodevices employing the BioCapacitor principle are introduced. Further, the recent challenges in the developments of self-powered stand-alone biodevices employing enzyme fuel cells combined with charge pumps and capacitors are introduced. Finally, the future prospects of biodevices employing the BioCapacitor principle are addressed. Copyright © 2015 The Authors

Infant mortality testing of high energy-density capacitors used on Nova

International Nuclear Information System (INIS)

Merritt, B.T.; Whitham, K.

1983-01-01

Nova is a solid state large laser for inertial confinement fusion research. Its flashlamps are driven by a 60 MJ capacitor bank. Part of this bank is being built with high energy-density capacitors, 52 μF, 22 KV, 12.5 KJ. A total of 2,645 of these capacitors have been purchased from two manufacturers. Each capacitor was infant mortality tested. The first test consisted of a high-potential test, bushing-to-case, since these capacitors have dual bushings. Then the capacitors were discharged 500 times with circuit conditions approximating the capacitors normal flashlamp load. Failure of either of these tests or if the capacitor was leaking was cause for rejection. The test results were remarkably good. Less than 0.5 percent failed the pulse-discharge test and less than 2.5 percent were rejected overall

Performance of AC/graphite capacitors at high weight ratios of AC/graphite

Energy Technology Data Exchange (ETDEWEB)

Wang, Hongyu [IM and T Ltd., Advanced Research Center, Saga University, 1341 Yoga-machi, Saga 840-0047 (Japan); Yoshio, Masaki [Advanced Research Center, Department of Applied Chemistry, Saga University, 1341 Yoga-machi, Saga 840-0047 (Japan)

2008-03-01

The effect of negative to positive electrode materials' weight ratio on the electrochemical performance of both activated carbon (AC)/AC and AC/graphite capacitors has been investigated, especially in the terms of capacity and cycle-ability. The limited capacity charge mode has been proposed to improve the cycle performance of AC/graphite capacitors at high weight ratios of AC/graphite. (author)

High energy storage capacitor by embedding tunneling nano-structures

Science.gov (United States)

Holme, Timothy P; Prinz, Friedrich B; Van Stockum, Philip B

2014-11-04

In an All-Electron Battery (AEB), inclusions embedded in an active region between two electrodes of a capacitor provide enhanced energy storage. Electrons can tunnel to/from and/or between the inclusions, thereby increasing the charge storage density relative to a conventional capacitor. One or more barrier layers is present in an AEB to block DC current flow through the device. The AEB effect can be enhanced by using multi-layer active regions having inclusion layers with the inclusions separated by spacer layers that don't have the inclusions. The use of cylindrical geometry or wrap around electrodes and/or barrier layers in a planar geometry can enhance the basic AEB effect. Other physical effects that can be employed in connection with the AEB effect are excited state energy storage, and formation of a Bose-Einstein condensate (BEC).

Design and Characterization of Vertical Mesh Capacitors in Standard CMOS

DEFF Research Database (Denmark)

Christensen, Kåre Tais

2001-01-01

This paper shows how good RF capacitors can be made in a standard digital CMOS process. The capacitors which are also well suited for binary weighted switched capacitor banks show very good RF performance: Q-values of 57 at 4.0 GHz, a density of 0.27 fF/μ2, 2.2 μm wide shielded unit capacitors, 6...

Leakage Currents in Low-Voltage PME and BME Ceramic Capacitors

Science.gov (United States)

Teverovsky, Alexander

2015-01-01

Introduction of BME capacitors to high-reliability electronics as a replacement for PME capacitors requires better understanding of changes in performance and reliability of MLCCs to set justified screening and qualification requirements. In this work, absorption and leakage currents in various lots of commercial and military grade X7R MLCCs rated to 100V and less have been measured to reveal difference in behavior of PME and BME capacitors in a wide range of voltages and temperatures. Degradation of leakage currents and failures in virgin capacitors and capacitors with introduced cracks has been studied at different voltages and temperatures during step stress highly accelerated life testing. Mechanisms of charge absorption, conduction and degradation have been discussed and a failure model in capacitors with defects suggested.

Polypropylene/Polyaniline Nanofiber/Reduced Graphene Oxide Nanocomposite with Enhanced Electrical, Dielectric, and Ferroelectric Properties for a High Energy Density Capacitor.

Science.gov (United States)

Cho, Sunghun; Kim, Minkyu; Lee, Jun Seop; Jang, Jyongsik

2015-10-14

This work demonstrates a ternary nanocomposite system, composed of polypropylene (PP), redoped PANI (r-PANI) nanofibers, and reduced graphene oxides (RGOs), for use in a high energy density capacitor. r-PANI nanofibers were fabricated by the combination methods of chemical oxidation polymerization and secondary doping processes, resulting in higher conductivity (σ≈156 S cm(-1)) than that of the primarily doped PANI nanofibers (σ≈16 S cm(-1)). RGO sheets with high electron mobility and thermal stability can enhance the conductivity of r-PANI/RGO (σ≈220 S cm(-1)) and thermal stability of PP matrix. These findings could be extended to combine the advantages of r-PANI nanofibers and RGO sheets for developing an efficient means of preparing PP/r-PANI/RGO nanocomposite. When the r-PANI/RGO cofillers (10 vol %) were added to PP matrix, the resulting PP/r-PANI/RGO nanocomposite exhibited high dielectric constant (ε'≈51.8) with small dielectric loss (ε″≈9.3×10(-3)). Furthermore, the PP/r-PANI/RGO nanocomposite was used for an energy-harvesting device, which demonstrated high energy density (Ue≈12.6 J cm(-3)) and breakdown strength (E≈5.86×10(3) kV cm(-1)).

Simple Ways to Make Real Capacitors

Science.gov (United States)

Herman, Rhett

2014-01-01

Many of us have grabbed two pieces of aluminum foil and a paper towel, quickly sandwiched them together, and exclaimed in lecture, "Look! It's easy to make a capacitor!" Then we move on from there, calculating things such as capacitances with various dielectrics or plate sizes, the capacitance of capacitor networks, RC circuits,…

Cellulose Triacetate Dielectric Films For Capacitors

Science.gov (United States)

Yen, Shiao-Ping S.; Jow, T. Richard

1994-01-01

Cellulose triacetate investigated for use as dielectric material in high-energy-density capacitors for pulsed-electrical-power systems. Films of cellulose triacetate metalized on one or both sides for use as substrates for electrodes and/or as dielectrics between electrodes in capacitors. Used without metalization as simple dielectric films. Advantages include high breakdown strength and self-healing capability.

Modelling of storage of the photovoltaic energy by super-capacitors

International Nuclear Information System (INIS)

Camara, Mohamed Ansoumane

2011-01-01

The storage by ultra-capacitors of photovoltaic energy is modeled in order to have an accurate and accessible model to integrate ultra-capacitors into solar energy conversion systems. Ultra-capacitors are modeled by a multi-branch circuit representation composed of resistors and capacitors with variable voltage whose values are determined by an accurate characterization experiment. Moreover, all the elements of a typical photovoltaic energy conversion system are modeled by using the Matlab/Simulink software (solar radiation, photovoltaic arrays, regulator, batteries and charges). The energy storage model by ultra-capacitors is then validated by the good agreement of measured values taken in real conditions with the results provided by simulations. Finally, two examples are proposed and discussed: the determination of the storage duration of ultra-capacitors versus solar irradiance and ambient temperature, and the integration of ultra-capacitors in the electrical feeding system of a DC motor to reduce the electrical current peak of the battery at the start of the motor. (author) [fr

Reliability of capacitors for DC-link applications - An overview

DEFF Research Database (Denmark)

Wang, Huai; Blaabjerg, Frede

2013-01-01

DC-link capacitors are an important part in the majority of power electronic converters which contribute to cost, size and failure rate on a considerable scale. From capacitor users' viewpoint, this paper presents a review on the improvement of reliability of DC-link in power electronic converters...... from two aspects: 1) reliability-oriented DC-link design solutions; 2) conditioning monitoring of DC-link capacitors during operation. Failure mechanisms, failure modes and lifetime models of capacitors suitable for the applications are also discussed as a basis to understand the physics......-of-failure. This review serves to provide a clear picture of the state-of-the-art research in this area and to identify the corresponding challenges and future research directions for capacitors and their DC-link applications....

Two-Capacitor Problem: A More Realistic View.

Science.gov (United States)

Powell, R. A.

1979-01-01

Discusses the two-capacitor problem by considering the self-inductance of the circuit used and by determining how well the usual series RC circuit approximates the two-capacitor problem when realistic values of L, C, and R are chosen. (GA)

High energy density capacitors fabricated by thin film technology

International Nuclear Information System (INIS)

Barbee, T W; Johnson, G W; Wagner, A V.

1999-01-01

Low energy density in conventional capacitors severely limits efforts to miniaturize power electronics and imposes design limitations on electronics in general. We have successfully applied physical vapor deposition technology to greatly increase capacitor energy density. The high dielectric breakdown strength we have achieved in alumina thin films allows high energy density to be achieved with this moderately low dielectric constant material. The small temperature dependence of the dielectric constant, and the high reliability, high resistivity, and low dielectric loss of Al 2 O 3 , make it even more appealing. We have constructed single dielectric layer thin film capacitors and shown that they can be stacked to form multilayered structures with no loss in yield for a given capacitance. Control of film growth morphology is critical for achieving the smooth, high quality interfaces between metal and dielectric necessary for device operation at high electric fields. Most importantly, high rate deposition with extremely low particle generation is essential for achieving high energy storage at a reasonable cost. This has been achieved by reactive magnetron sputtering in which the reaction to form the dielectric oxide has been confined to the deposition surface. By this technique we have achieved a yield of over 50% for 1 cm 2 devices with an energy density of 14 J per cubic centimeter of Al 2 O 3 dielectric material in 1.2 kV, 4 nF devices. By further reducing defect density and increasing the dielectric constant of the material, we will be able to increase capacitance and construct high energy density devices to meet the requirements of applications in power electronics

An Electrochemical Capacitor with Applicable Energy Density of 7.4 Wh/kg at Average Power Density of 3000 W/kg.

Science.gov (United States)

Zhai, Teng; Lu, Xihong; Wang, Hanyu; Wang, Gongming; Mathis, Tyler; Liu, Tianyu; Li, Cheng; Tong, Yexiang; Li, Yat

2015-05-13

Electrochemical capacitors represent a new class of charge storage devices that can simultaneously achieve high energy density and high power density. Previous reports have been primarily focused on the development of high performance capacitor electrodes. Although these electrodes have achieved excellent specific capacitance based on per unit mass of active materials, the gravimetric energy densities calculated based on the weight of entire capacitor device were fairly small. This is mainly due to the large mass ratio between current collector and active material. We aimed to address this issue by a 2-fold approach of minimizing the mass of current collector and increasing the electrode performance. Here we report an electrochemical capacitor using 3D graphene hollow structure as current collector, vanadium sulfide and manganese oxide as anode and cathode materials, respectively. 3D graphene hollow structure provides a lightweight and highly conductive scaffold for deposition of pseudocapacitive materials. The device achieves an excellent active material ratio of 24%. Significantly, it delivers a remarkable energy density of 7.4 Wh/kg (based on the weight of entire device) at the average power density of 3000 W/kg. This is the highest gravimetric energy density reported for asymmetric electrochemical capacitors at such a high power density.

Atomic Layer-Deposited Molybdenum Oxide/Carbon Nanotube Hybrid Electrodes: The Influence of Crystal Structure on Lithium-Ion Capacitor Performance.

Science.gov (United States)

Fleischmann, Simon; Zeiger, Marco; Quade, Antje; Kruth, Angela; Presser, Volker

2018-05-25

Merging of supercapacitors and batteries promises the creation of electrochemical energy storage devices that combine high specific energy, power, and cycling stability. For that purpose, lithium-ion capacitors (LICs) that store energy by lithiation reactions at the negative electrode and double-layer formation at the positive electrode are currently investigated. In this study, we explore the suitability of molybdenum oxide as a negative electrode material in LICs for the first time. Molybdenum oxide-carbon nanotube hybrid materials were synthesized via atomic layer deposition, and different crystal structures and morphologies were obtained by post-deposition annealing. These model materials are first structurally characterized and electrochemically evaluated in half-cells. Benchmarking in LIC full-cells revealed the influences of crystal structure, half-cell capacity, and rate handling on the actual device level performance metrics. The energy efficiency, specific energy, and power are mainly influenced by the overpotential and kinetics of the lithiation reaction during charging. Optimized LIC cells show a maximum specific energy of about 70 W·h·kg -1 and a high specific power of 4 kW·kg -1 at 34 W·h·kg -1 . The longevity of the LIC cells is drastically increased without significantly reducing the energy by preventing a deep cell discharge, hindering the negative electrode from crossing its anodic potential limit.

A Humidity-Dependent Lifetime Derating Factor for DC Film Capacitors

DEFF Research Database (Denmark)

Wang, Huai; Reigosa, Paula Diaz; Blaabjerg, Frede

2015-01-01

accelerated testing of film capacitors under different humidity conditions, enabling a more justified lifetime prediction of film capacitors for DC-link applications under specific climatic environments. The analysis of the testing results and the detailed discussion on the derating factor with different......Film capacitors are widely assumed to have superior reliability performance than Aluminum electrolytic capacitors in DC-link design of power electronic converters. However, the assumption needs to be critically judged especially for applications under high humidity environments. This paper proposes...... a humidity-dependent lifetime derating factor for a type of plastic-boxed metallized DC film capacitors. It overcomes the limitation that the humidity impact is not considered in the state-of-the-art DC film capacitor lifetime models. The lifetime derating factor is obtained based on a total of 8,700 hours...

Development and experimental study of oil-free capacitor module for plasma focus device

Science.gov (United States)

Sharma, Ravindra Kumar; Sharma, Archana

2017-03-01

This development is concerned with the compact capacitor module for a plasma focus device. Oil-free, non-standard geometry capacitors are designed and developed for high current delivery in sub-microseconds time. Metalized dielectric film based pulse capacitor becomes progressively less viable at currents above 10 kA. It is due to reliability and energy scaling difficulties, based on effects such as vaporization, high resistivity, and end connection. Bipolar electrolytic capacitors are also not preferred due to their limited life and comparatively low peak current delivery. Bi-axially oriented polypropylene (BOPP) film with extended aluminum foil is a combination to deliver moderately high power. But, electrically weak points, relative permittivity, and the edge gap margins have made its adoption difficult. A concept has been developed in lab for implementing the above combination in a less complex and costly manner. This paper concerns the development and testing process techniques for quite different hollow cylindrical, oil-free capacitors (4 μ F , 10 kV, 20 nH). Shot life of 1000 has been experimentally performed on the test bed at its rated energy density level. The technological methods and engineering techniques are now available and utilized for manufacturing and testing of BOPP film based oil-free capacitors.

GeO{sub x} interfacial layer scavenging remotely induced by metal electrode in metal/HfO{sub 2}/GeO{sub x}/Ge capacitors

Energy Technology Data Exchange (ETDEWEB)

Lee, Taehoon; Jung, Yong Chan; Seong, Sejong; Ahn, Jinho, E-mail: jhahn@hanyang.ac.kr [Department of Materials Science and Engineering, Hanyang University, Seoul 04763 (Korea, Republic of); Lee, Sung Bo [Department of Materials Science and Engineering and Research Institute of Advanced Materials (RIAM), Seoul National University, Seoul 08826 (Korea, Republic of); Park, In-Sung, E-mail: parkis77@hanyang.ac.kr [Department of Materials Science and Engineering, Hanyang University, Seoul 04763 (Korea, Republic of); Institute of Nano Science and Technology, Hanyang University, Seoul 04763 (Korea, Republic of)

2016-07-11

The metal gate electrodes of Ni, W, and Pt have been investigated for their scavenging effect: a reduction of the GeO{sub x} interfacial layer (IL) between HfO{sub 2} dielectric and Ge substrate in metal/HfO{sub 2}/GeO{sub x}/Ge capacitors. All the capacitors were fabricated using the same process except for the material used in the metal electrodes. Capacitance-voltage measurements, scanning transmission electron microscopy, and electron energy loss spectroscopy were conducted to confirm the scavenging of GeO{sub x} IL. Interestingly, these metals are observed to remotely scavenge the interfacial layer, reducing its thickness in the order of Ni, W, and then Pt. The capacitance equivalent thickness of these capacitors with Ni, W, and Pt electrodes are evaluated to be 2.7 nm, 3.0 nm, and 3.5 nm, and each final remnant physical thickness of GeO{sub x} IL layer is 1.1 nm 1.4 nm, and 1.9 nm, respectively. It is suggested that the scavenging effect induced by the metal electrodes is related to the concentration of oxygen vacancies generated by oxidation reaction at the metal/HfO{sub 2} interface.

Quasistationary magnetic field generation with a laser-driven capacitor-coil assembly.

Science.gov (United States)

Tikhonchuk, V T; Bailly-Grandvaux, M; Santos, J J; Poyé, A

2017-08-01

Recent experiments are showing possibilities to generate strong magnetic fields on the excess of 500 T with high-energy nanosecond laser pulses in a compact setup of a capacitor connected to a single turn coil. Hot electrons ejected from the capacitor plate (cathode) are collected at the other plate (anode), thus providing the source of a current in the coil. However, the physical processes leading to generation of currents exceeding hundreds of kiloamperes in such a laser-driven diode are not sufficiently understood. Here we present a critical analysis of previous results and propose a self-consistent model for the high current generation in a laser-driven capacitor-coil assembly. It accounts for three major effects controlling the diode current: the space charge neutralization, the plasma magnetization between the capacitor plates, and the Ohmic heating of the external circuit-the coil-shaped connecting wire. The model provides the conditions necessary for transporting strongly super-Alfvenic currents through the diode on the time scale of a few nanoseconds. The model validity is confirmed by a comparison with the available experimental data.

Effect of atomic layer deposition temperature on current conduction in Al{sub 2}O{sub 3} films formed using H{sub 2}O oxidant

Energy Technology Data Exchange (ETDEWEB)

Hiraiwa, Atsushi, E-mail: hiraiwa@aoni.waseda.jp, E-mail: qs4a-hriw@asahi-net.or.jp [Research Organization for Nano and Life Innovation, Waseda University, 513 Waseda-Tsurumaki, Shinjuku, Tokyo 162-0041 (Japan); Matsumura, Daisuke [Faculty of Science and Engineering, Waseda University, 3-4-1 Okubo, Shinjuku, Tokyo 169-8555 (Japan); Kawarada, Hiroshi, E-mail: kawarada@waseda.jp [Research Organization for Nano and Life Innovation, Waseda University, 513 Waseda-Tsurumaki, Shinjuku, Tokyo 162-0041 (Japan); Faculty of Science and Engineering, Waseda University, 3-4-1 Okubo, Shinjuku, Tokyo 169-8555 (Japan); The Kagami Memorial Laboratory for Materials Science and Technology, Waseda University, 2-8-26 Nishiwaseda, Shinjuku, Tokyo 169-0051 (Japan)

2016-08-28

To develop high-performance, high-reliability gate insulation and surface passivation technologies for wide-bandgap semiconductor devices, the effect of atomic layer deposition (ALD) temperature on current conduction in Al{sub 2}O{sub 3} films is investigated based on the recently proposed space-charge-controlled field emission model. Leakage current measurement shows that Al{sub 2}O{sub 3} metal-insulator-semiconductor capacitors formed on the Si substrates underperform thermally grown SiO{sub 2} capacitors at the same average field. However, using equivalent oxide field as a more practical measure, the Al{sub 2}O{sub 3} capacitors are found to outperform the SiO{sub 2} capacitors in the cases where the capacitors are negatively biased and the gate material is adequately selected to reduce virtual dipoles at the gate/Al{sub 2}O{sub 3} interface. The Al{sub 2}O{sub 3} electron affinity increases with the increasing ALD temperature, but the gate-side virtual dipoles are not affected. Therefore, the leakage current of negatively biased Al{sub 2}O{sub 3} capacitors is approximately independent of the ALD temperature because of the compensation of the opposite effects of increased electron affinity and permittivity in Al{sub 2}O{sub 3}. By contrast, the substrate-side sheet of charge increases with increasing ALD temperature above 210 °C and hence enhances the current of positively biased Al{sub 2}O{sub 3} capacitors more significantly at high temperatures. Additionally, an anomalous oscillatory shift of the current-voltage characteristics with ALD temperature was observed in positively biased capacitors formed by low-temperature (≤210 °C) ALD. This shift is caused by dipoles at the Al{sub 2}O{sub 3}/underlying SiO{sub 2} interface. Although they have a minimal positive-bias leakage current, the low-temperature-grown Al{sub 2}O{sub 3} films cause the so-called blisters problem when heated above 400 °C. Therefore, because of the absence of blistering, a 450�

Low-Voltage Switched-Capacitor Circuits

DEFF Research Database (Denmark)

Bidari, E.; Keskin, M.; Maloberti, F.

1999-01-01

Switched-capacitor stages are described which can function with very low (typically 1 V) supply voltages, without using voltage boosting or switched op-amps. Simulations indicate that high performance may be achieved using these circuits in filter or data converter applications.......Switched-capacitor stages are described which can function with very low (typically 1 V) supply voltages, without using voltage boosting or switched op-amps. Simulations indicate that high performance may be achieved using these circuits in filter or data converter applications....

Fabrication of wound capacitors using flexible alkali-free glass

International Nuclear Information System (INIS)

Wilke, Rudeger H. T.; Baker, Amanda; Brown-Shaklee, Harlan; Johnson-Wilke, Raegan; Hettler, Chad

2016-01-01

Here, alkali-free glasses, which exhibit high energy storage densities (~35 J/cc), present a unique opportunity to couple high temperature stability with high breakdown strength, and thus provide an avenue for capacitor applications with stringent temperature and power requirements. Realizing the potential of these materials in kilovolt class capacitors with >1 J/cc recoverable energy density requires novel packaging strategies that incorporate these extremely fragile dielectrics. In this paper, we demonstrate the feasibility of fabricating wound capacitors using 50-μm-thick glass. Two capacitors were fabricated from 2.8-m-long ribbons of thin (50 μm) glass wound into 125-140-mm-diameter spools. The capacitors exhibit a capacitance of 70-75 nF with loss tangents below 1%. The wound capacitors can operate up to 1 kV and show excellent temperature stability to 150 °C. By improving the end terminations, the self-resonance can be shifted to above 1 MHz, indicating that these materials may be useful for pulsed power applications with microsecond discharge times.

Mesoporous Transition Metal Oxides for Supercapacitors

OpenAIRE

Wang, Yan; Guo, Jin; Wang, Tingfeng; Shao, Junfeng; Wang, Dong; Yang, Ying-Wei

2015-01-01

Recently, transition metal oxides, such as ruthenium oxide (RuO2), manganese dioxide (MnO2), nickel oxides (NiO) and cobalt oxide (Co3O4), have been widely investigated as electrode materials for pseudo-capacitors. In particular, these metal oxides with mesoporous structures have become very hot nanomaterials in the field of supercapacitors owing to their large specific surface areas and suitable pore size distributions. The high specific capacities of these mesoporous metal oxides are result...

A noise level prediction method based on electro-mechanical frequency response function for capacitors.

Science.gov (United States)

Zhu, Lingyu; Ji, Shengchang; Shen, Qi; Liu, Yuan; Li, Jinyu; Liu, Hao

2013-01-01

The capacitors in high-voltage direct-current (HVDC) converter stations radiate a lot of audible noise which can reach higher than 100 dB. The existing noise level prediction methods are not satisfying enough. In this paper, a new noise level prediction method is proposed based on a frequency response function considering both electrical and mechanical characteristics of capacitors. The electro-mechanical frequency response function (EMFRF) is defined as the frequency domain quotient of the vibration response and the squared capacitor voltage, and it is obtained from impulse current experiment. Under given excitations, the vibration response of the capacitor tank is the product of EMFRF and the square of the given capacitor voltage in frequency domain, and the radiated audible noise is calculated by structure acoustic coupling formulas. The noise level under the same excitations is also measured in laboratory, and the results are compared with the prediction. The comparison proves that the noise prediction method is effective.

Room temperature plasma oxidation: A new process for preparation of ultrathin layers of silicon oxide, and high dielectric constant materials

International Nuclear Information System (INIS)

Tinoco, J.C.; Estrada, M.; Baez, H.; Cerdeira, A.

2006-01-01

In this paper we present basic features and oxidation law of the room temperature plasma oxidation (RTPO), as a new process for preparation of less than 2 nm thick layers of SiO 2 , and high-k layers of TiO 2 . We show that oxidation rate follows a potential law dependence on oxidation time. The proportionality constant is function of pressure, plasma power, reagent gas and plasma density, while the exponent depends only on the reactive gas. These parameters are related to the physical phenomena occurring inside the plasma, during oxidation. Metal-Oxide-Semiconductor (MOS) capacitors fabricated with these layers are characterized by capacitance-voltage, current-voltage and current-voltage-temperature measurements. Less than 2.5 nm SiO 2 layers with surface roughness similar to thermal oxide films, surface state density below 3 x 10 11 cm -2 and current density in the expected range for each corresponding thickness, were obtained by RTPO in a parallel-plate reactor, at 180 mW/cm 2 and pressure range between 9.33 and 66.5 Pa (0.07 and 0.5 Torr) using O 2 and N 2 O as reactive gases. MOS capacitors with TiO 2 layers formed by RTPO of sputtered Ti layers are also characterized. Finally, MOS capacitors with stacked layers of TiO 2 over SiO 2 , both layers obtained by RTPO, were prepared and evaluated to determine the feasibility of the use of TiO 2 as a candidate for next technology nodes

Li-Ion, Ultra-capacitor Based Hybrid Energy Module

National Research Council Canada - National Science Library

Daboussi, Zaher; Paryani, Anil; Khalil, Gus; Catherino, Henry; Gargies, Sonya

2007-01-01

.... To determine the optimum utilization of ultra-capacitors in applications where high power density and high energy density are required, an optimized Li-Ion/Ultra-capacitor Hybrid Energy Module (HEM...

Physics Based Electrolytic Capacitor Degradation Models for Prognostic Studies under Thermal Overstress

Science.gov (United States)

Kulkarni, Chetan S.; Celaya, Jose R.; Goebel, Kai; Biswas, Gautam

2012-01-01

Electrolytic capacitors are used in several applications ranging from power supplies on safety critical avionics equipment to power drivers for electro-mechanical actuators. This makes them good candidates for prognostics and health management research. Prognostics provides a way to assess remaining useful life of components or systems based on their current state of health and their anticipated future use and operational conditions. Past experiences show that capacitors tend to degrade and fail faster under high electrical and thermal stress conditions that they are often subjected to during operations. In this work, we study the effects of accelerated aging due to thermal stress on different sets of capacitors under different conditions. Our focus is on deriving first principles degradation models for thermal stress conditions. Data collected from simultaneous experiments are used to validate the desired models. Our overall goal is to derive accurate models of capacitor degradation, and use them to predict performance changes in DC-DC converters.

A light-powered bio-capacitor with nanochannel modulation.

Science.gov (United States)

Rao, Siyuan; Lu, Shanfu; Guo, Zhibin; Li, Yuan; Chen, Deliang; Xiang, Yan

2014-09-03

An artificial bio-capacitor system is established, consisting of the proton-pump protein proteorhodopsin and a modified alumina nanochannel, inspired by the capacitor-like behavior of plasma membranes realized through the cooperation of ion-pump and ion-channel proteins. Capacitor-like features of this simplified system are realized and identified, and the photocurrent duration time can be modulated by nanochannel modification to obtain favorable square-wave currents. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Microprocessor Controlled Capacitor Bank Switching System for ...

African Journals Online (AJOL)

In this work, analysis and development of a microprocessor controlled capacitor bank switching system for deployment in a smart distribution network was carried out. This system was implemented by the use of discreet components such as resistors, capacitors, transistor, diode, automatic voltage regulator, with the ...

Comparison of MOS capacitor and transistor postirradiation response

International Nuclear Information System (INIS)

McWhorter, P.J.; Fleetwood, D.M.; Pastorek, R.A.; Zimmerman, G.T.

1989-01-01

The postirradiation response of MOS capacitors and transistors fabricated on the same chip has been examined as a function of dose and anneal bias. A variety of analysis techniques are used to evaluate the postirradiation response of these structures, including low and high frequency capacitance-voltage techniques, subthreshold current-voltage techniques, and charge pumping. Though there are changes in the postirradiation energy spectrum of ΔD it , no clear evidence of defect transformation is observed on transistors or capacitors under any conditions examined. Postirradiation response at 80 degrees C is found to be similar in the two structures for low levels of damage (100 krad). For both structures, interface-trap densities continue to grow following irradiation under these conditions. In contrast, the postirradiation response of capacitors and transistors can differ qualitatively at higher levels of damage (1 Mrad), with interface-traps increasing postirradiation at 80 degrees C for transistors and annealing for capacitors. These results indicate that capacitor structures may not be suitable for hardness assurance studies that involve elevated temperature irradiations or postirradiation anneals

Study of electric capacitors using Finite Element Method

Directory of Open Access Journals (Sweden)

Alina Neamț

2012-12-01

Full Text Available A capacitor is made of two armatures and a dielectric between the two armatures. In this paper, we are going to study the plane capacitor , which is made of two equal metal armatures, plane and parallel, having the S surface, situated at a distance d much shorter than the armatures dimensions, between which there is a liniar, homogenous and isotropic dielectric having a constant electrical permittivity.The purpose of studying the plane capacitor, through MEF, presented in this paper,is to establish the stress to which the dielectrics may be subject to, in daily practice, and the influence that their superposition in an electric field has, on each of them. The study of the plane capacitor , finalised with observations on the raise of the dependence of the electric field intensity in air on the size of the air layer and having as parameter the type of dielectric material introduced between the armatures, is an example of confirmation or invalidation of the possibility and utility of using layers of dielectrics between the armatures of the capacitors.

Reliability Evaluation of Base-Metal-Electrode (BME) Multilayer Ceramic Capacitors for Space Applications

Science.gov (United States)

Liu, David (Donghang)

2011-01-01

This paper reports reliability evaluation of BME ceramic capacitors for possible high reliability space-level applications. The study is focused on the construction and microstructure of BME capacitors and their impacts on the capacitor life reliability. First, the examinations of the construction and microstructure of commercial-off-the-shelf (COTS) BME capacitors show great variance in dielectric layer thickness, even among BME capacitors with the same rated voltage. Compared to PME (precious-metal-electrode) capacitors, BME capacitors exhibit a denser and more uniform microstructure, with an average grain size between 0.3 and approximately 0.5 micrometers, which is much less than that of most PME capacitors. The primary reasons that a BME capacitor can be fabricated with more internal electrode layers and less dielectric layer thickness is that it has a fine-grained microstructure and does not shrink much during ceramic sintering. This results in the BME capacitors a very high volumetric efficiency. The reliability of BME and PME capacitors was investigated using highly accelerated life testing (HALT) and regular life testing as per MIL-PRF-123. Most BME capacitors were found to fail· with an early dielectric wearout, followed by a rapid wearout failure mode during the HALT test. When most of the early wearout failures were removed, BME capacitors exhibited a minimum mean time-to-failure of more than 10(exp 5) years. Dielectric thickness was found to be a critical parameter for the reliability of BME capacitors. The number of stacked grains in a dielectric layer appears to play a significant role in determining BME capacitor reliability. Although dielectric layer thickness varies for a given rated voltage in BME capacitors, the number of stacked grains is relatively consistent, typically between 10 and 20. This may suggest that the number of grains per dielectric layer is more critical than the thickness itself for determining the rated voltage and the life

Novel Dry-Type Glucose Sensor Based on a Metal-Oxide-Semiconductor Capacitor Structure with Horseradish Peroxidase + Glucose Oxidase Catalyzing Layer

Science.gov (United States)

Lin, Jing-Jenn; Wu, You-Lin; Hsu, Po-Yen

2007-10-01

In this paper, we present a novel dry-type glucose sensor based on a metal-oxide-semiconductor capacitor (MOSC) structure using SiO2 as a gate dielectric in conjunction with a horseradish peroxidase (HRP) + glucose oxidase (GOD) catalyzing layer. The tested glucose solution was dropped directly onto the window opened on the SiO2 layer, with a coating of HRP + GOD catalyzing layer on top of the gate dielectric. From the capacitance-voltage (C-V) characteristics of the sensor, we found that the glucose solution can induce an inversion layer on the silicon surface causing a gate leakage current flowing along the SiO2 surface. The gate current changes Δ I before and after the drop of glucose solution exhibits a near-linear relationship with increasing glucose concentration. The Δ I sensitivity is about 1.76 nA cm-2 M-1, and the current is quite stable 20 min after the drop of the glucose solution is tested.

An innovative ultra-capacitor driven shape memory alloy actuator with an embedded control system

International Nuclear Information System (INIS)

Li, Peng; Song, Gangbing

2014-01-01

In this paper, an innovative ultra-capacitor driven shape memory alloy (SMA) actuator with an embedded control system is proposed targeting high power high-duty cycle SMA applications. The ultra-capacitor, which is capable of delivering massive amounts of instantaneous current in a compact dimension for high power applications, is chosen as the main component of the power supply. A specialized embedded system is designed from the ground up to control the ultra-capacitor driven SMA system. The control of the ultra-capacitor driven SMA is different from that of a regular constant voltage powered SMA system in that the energy and the voltage of the ultra-capacitor decrease as the system load increases. The embedded control system is also different from a computer-based control system in that it has limited computational power, and the control algorithm has to be designed to be simple while effective so that it can fit into the embedded system environment. The problem of a variable voltage power source induced by the use of the ultra-capacitor is solved by using a fuzzy PID (proportional integral and derivative) control. The method of using an ultra-capacitor to drive SMA actuators enabled SMA as a good candidate for high power high-duty cycle applications. The proposed embedded control system provides a good and ready-to-use solution for SMA high power applications. (paper)

Rotary capacitor

CERN Multimedia

CERN PhotoLab

1971-01-01

The rotating wheel of the rotary capacitor representing the most critical part of the new radio-frequency system of the synchro-cyclotron. The three rows of teeth on the circumference of the wheel pass between four rows of stator blades with a minimum clearance of 1 mm at a velocity of 1700 rev/min.

Effect of ultraviolet light on fatigue of lead zirconate titanate thin-film capacitors

Science.gov (United States)

Lee, J.; Esayan, S.; Safari, A.; Ramesh, R.

1994-07-01

Fatigue of Pb(Zr0.52Ti0.48)O3 (PZT) thin-film capacitors was studied under UV light (He-Cd laser, λ=325 nm). The remanent polarization of the PZT film capacitors increased upon light illumination. Fatigue resistance was also improved under UV light. During fatigue test, the change in polarization of PZT films upon UV light illumination increased gradually with cycling. These results were examined within the framework of the polarization screening model, which is suggested as an essential process for fatigue. This leads to a conclusion that more charged defects are involved in the fatigue process through internal screening of polarization.

Liquid Crystals of Lithium Dodecylbenzenesulfonate for Electric Double Layer Capacitors

International Nuclear Information System (INIS)

Kuzmin, Andrey Vasil’evich; Yurtov, Evgeny V.

2016-01-01

Ionic lyotropic liquid crystals based on lithium dodecylbenzenesulfonate were used as electrolytes for electric double layer capacitors with carbon fibrous electrodes. The capacitors were tasted by cyclic voltammetry, galvanostatic charge and discharge, and impedance spectroscopy. The highest specific capacitance was achieved for electrical double layer capacitor equipped with ionic lyotropic liquid crystal of lithium dodecylbenzenesulfonate 35 wt% in water. The specific capacitance of capacitor was calculated from galvanostatic discharge curves – 15 F/g of carbon fibrous material

50V All-PMOS Charge Pumps Using Low-Voltage Capacitors

KAUST Repository

Emira, Ahmed

2012-10-06

In this work, two high-voltage charge pumps are introduced. In order to minimize the area of the pumping capacitors, which dominates the overall area of the charge pump, high density capacitors have been utilized. Nonetheless, these high density capacitors suffer from low breakdown voltage which is not compatible with the targeted high voltage application. To circumvent the breakdown limitation, a special clocking scheme is used to limit the maximum voltage across any pumping capacitor. The two charge pump circuits were fabricated in a 0:6m CMOS technology with poly0-poly1 capacitors. The output voltage of the two charge pumps reached 42:8V and 51V while the voltage across any capacitor did not exceed the value of the input voltage. Compared to other designs reported in the literature, the proposed charge pump provides the highest output voltage which makes it more suitable for tuning MEMS devices.

50V All-PMOS Charge Pumps Using Low-Voltage Capacitors

KAUST Repository

Emira, Ahmed; AbdelGhany, M.; Elsayed, M.; Elshurafa, Amro M.; Sedky, S.; Salama, Khaled N.

2012-01-01

In this work, two high-voltage charge pumps are introduced. In order to minimize the area of the pumping capacitors, which dominates the overall area of the charge pump, high density capacitors have been utilized. Nonetheless, these high density capacitors suffer from low breakdown voltage which is not compatible with the targeted high voltage application. To circumvent the breakdown limitation, a special clocking scheme is used to limit the maximum voltage across any pumping capacitor. The two charge pump circuits were fabricated in a 0:6m CMOS technology with poly0-poly1 capacitors. The output voltage of the two charge pumps reached 42:8V and 51V while the voltage across any capacitor did not exceed the value of the input voltage. Compared to other designs reported in the literature, the proposed charge pump provides the highest output voltage which makes it more suitable for tuning MEMS devices.

A 100 MS/s 9 bit 0.43 mW SAR ADC with custom capacitor array

Science.gov (United States)

Jingjing, Wang; Zemin, Feng; Rongjin, Xu; Chixiao, Chen; Fan, Ye; Jun, Xu; Junyan, Ren

2016-05-01

A low power 9 bit 100 MS/s successive approximation register analog-to-digital converter (SAR ADC) with custom capacitor array is presented. A brand-new 3-D MOM unit capacitor is used as the basic capacitor cell of this capacitor array. The unit capacitor has a capacitance of 1 fF. Besides, the advanced capacitor array structure and switch mode decrease the power consumption a lot. To verify the effectiveness of this low power design, the 9 bit 100 MS/s SAR ADC is implemented in TSMC IP9M 65 nm LP CMOS technology. The measurement results demonstrate that this design achieves an effective number of bits (ENOB) of 7.4 bit, a signal-to-noise plus distortion ratio (SNDR) of 46.40 dB and a spurious-free dynamic range (SFDR) of 62.31 dB at 100 MS/s with 1 MHz input. The SAR ADC core occupies an area of 0.030 mm2 and consumes 0.43 mW under a supply voltage of 1.2 V. The figure of merit (FOM) of the SAR ADC achieves 23.75 fJ/conv. Project supported by the National High-Tech Research and Development Program of China (No. 2013AA014101).

Incorporation of distributed generation and shunt capacitor in radial distribution system for techno-economic benefits

Directory of Open Access Journals (Sweden)

Mukul Dixit

2017-04-01

The various costs such as purchase active power from grid, DG installation, capacitor installation, DG Operation and Maintenance (O&M are evaluated at two different load scenarios. In addition to that, technical and economical analyses are examined for various combinations of DGs and shunt capacitors. The proposed methodology is successfully demonstrated on 33-bus and 85-bus radial networks and the obtained numerical outcomes validate the suitability, importance and effectiveness to identify locations as well as sizes of DGs and shunt capacitors.

Negative capacitance in a ferroelectric capacitor.

Science.gov (United States)

Khan, Asif Islam; Chatterjee, Korok; Wang, Brian; Drapcho, Steven; You, Long; Serrao, Claudy; Bakaul, Saidur Rahman; Ramesh, Ramamoorthy; Salahuddin, Sayeef

2015-02-01

The Boltzmann distribution of electrons poses a fundamental barrier to lowering energy dissipation in conventional electronics, often termed as Boltzmann Tyranny. Negative capacitance in ferroelectric materials, which stems from the stored energy of a phase transition, could provide a solution, but a direct measurement of negative capacitance has so far been elusive. Here, we report the observation of negative capacitance in a thin, epitaxial ferroelectric film. When a voltage pulse is applied, the voltage across the ferroelectric capacitor is found to be decreasing with time--in exactly the opposite direction to which voltage for a regular capacitor should change. Analysis of this 'inductance'-like behaviour from a capacitor presents an unprecedented insight into the intrinsic energy profile of the ferroelectric material and could pave the way for completely new applications.

Process Optimization of P(VDF-TrFE)-BaTiO3 Nanocomposites for Storage Capacitor Applications

KAUST Repository

Almadhoun, Mahmoud N.

2011-01-01

are considered to be one possible solution towards the fabrication of high energy density capacitors, whether as embedded capacitors or gate insulators in organic field effect transistors (OFETs). Selecting high permittivity ceramics mixed with polymers with high

Electrically and thermally activated ageing mechanisms in metallised polymer film capacitors

International Nuclear Information System (INIS)

Lee, Yuen Pen

2001-01-01

This dissertation describes a combined computational and experimental study to understand the fundamental electrostatic, thermal, electromagnetic, and discharge related processes during the ageing of metallised polymer film capacitors. In the event of internal breakdowns, these capacitors are capable of 'self-healing' through a controlled isolation of defects on the electrode surfaces by mosaic patterning the electrode. The objective of this project is to develop viable computer models to unravel electrothermally activated ageing processes in capacitors. To provide the necessary validation to any capacitor models developed, our work is supported by comprehensive experiments including industrial standard accelerated life tests and associated breakdown damage analyses of tested capacitors. These have enabled an empirical identification of main factors affecting the reliability and lifetime of capacitors. Relevant raw data and the qualitative picture enabled by these data are crucial to the development and refinement of viable computational models of capacitors. Given the complexity of ageing processes, it is both very difficult and unnecessary to develop a one-for-all model that describes indiscriminately all relevant processes. The approach adapted in this work has been to prioritise key ageing processes and modularise each process with its own computer model. The overall picture of capacitor ageing can then be unravelled by integrating all modules together. For instance, the fine geometrical features of the electrode mosaic pattern and the capacitor's laminated structure have been assessed through a concept of field intensification using a 2D electrostatic finite element computation. With fine geometrical features accounted for by the field intensification concept, fast electric events in capacitors can be simulated using a simple equivalent circuit model. Similar assessment of heat transfer has led to an equally efficient modelling of thermal events in capacitors

Practical Considerations of the Start-up Procedure for an Active Capacitor

DEFF Research Database (Denmark)

Wang, Haoran; Wang, Qian; Geng, Tao

2017-01-01

Capacitive DC links provide the only low-impedance current path connected with an input source during the start-up of many voltage source converters. A soft-start circuit is usually implemented to limit the inrush current. A two-terminal active capacitor is recently proposed which can directly...... replace conventional passive capacitors in DC links, with reduced cost or size for a given application. The active capacitor has the same level of convenience with two power terminals only as a passive capacitor. This paper proposes two start-up schemes for the active capacitor to overcome the drawbacks...... of existing methods previously widely used for passive capacitors. One scheme is based on a trade-off design between the start-up performance and the component sizing of the active capacitor. The other scheme is based on either an additional bypass switch together with the existing soft-start circuit...

Electrochemical properties of quaternary ammonium salts for electrochemical capacitors

Energy Technology Data Exchange (ETDEWEB)

Ue, Makoto; Takeda, Masayuki; Takehara, Masahiro; Mori, Shoichiro [Mitsubishi Chemical Corp., Inashiki, Ibaraki (Japan). Tsukuba Research Center

1997-08-01

The limiting reduction and oxidation potentials and electrolytic conductivities of new quaternary ammonium salts were examined for electrochemical capacitor applications, whose anions have already been tested as lithium salts for lithium battery applications. The anodic stability was in the following order BR{sub 4}{sup {minus}} < ClO{sub 4}{sup {minus}} {le} CF{sub 3}SO{sub 3}{sup {minus}} < (CF{sub 3}SO{sub 2}){sub 2}N{sup {minus}} {le} C{sub 4}F{sub 9}SO{sub 3}{sup {minus}} < BF{sub 4}{sup {minus}} < PF{sub 6}{sup {minus}} {le} AsF{sub 6}{sup {minus}} < SbF{sub 6}{sup {minus}}. The electrolytic conductivities of Me{sub 4{minus}n}Et{sub n}N(CF{sub 3}SO{sub 2}){sub 2}N (n = 0--4) were examined in comparison with Me{sub 4{minus}n}Et{sub n}NBF{sub 4} counterparts. These imide salts showed good solubility, relatively high conductivity, and anodic stability in propylene carbonate. Et{sub 4}N(CF{sub 3}SO{sub 2}){sub 2}N was found to be a good supporting salt for low permittivity organic solvents, and it afforded a highly conductive electrolyte system based on the ethylene carbonate-dimethyl carbonate mixed solvent, which is useful for electrochemical capacitor applications.

A Thermal Runaway Failure Model for Low-Voltage BME Ceramic Capacitors with Defects

Science.gov (United States)

Teverovsky, Alexander

2017-01-01

Reliability of base metal electrode (BME) multilayer ceramic capacitors (MLCCs) that until recently were used mostly in commercial applications, have been improved substantially by using new materials and processes. Currently, the inception of intrinsic wear-out failures in high quality capacitors became much greater than the mission duration in most high-reliability applications. However, in capacitors with defects degradation processes might accelerate substantially and cause infant mortality failures. In this work, a physical model that relates the presence of defects to reduction of breakdown voltages and decreasing times to failure has been suggested. The effect of the defect size has been analyzed using a thermal runaway model of failures. Adequacy of highly accelerated life testing (HALT) to predict reliability at normal operating conditions and limitations of voltage acceleration are considered. The applicability of the model to BME capacitors with cracks is discussed and validated experimentally.

An Approach to Solid-State Electrical Double Layer Capacitors Fabricated with Graphene Oxide-Doped, Ionic Liquid-Based Solid Copolymer Electrolytes.

Science.gov (United States)

Fattah, N F A; Ng, H M; Mahipal, Y K; Numan, Arshid; Ramesh, S; Ramesh, K

2016-06-06

Solid polymer electrolyte (SPE) composed of semi-crystalline poly (vinylidene fluoride-hexafluoropropylene) [P(VdF-HFP)] copolymer, 1-ethyl-3-methylimidazolium bis (trifluoromethyl sulphonyl) imide [EMI-BTI] and graphene oxide (GO) was prepared and its performance evaluated. The effects of GO nano-filler were investigated in terms of enhancement in ionic conductivity along with the electrochemical properties of its electrical double layer capacitors (EDLC). The GO-doped SPE shows improvement in ionic conductivity compared to the P(VdF-HFP)-[EMI-BTI] SPE system due to the existence of the abundant oxygen-containing functional group in GO that assists in the improvement of the ion mobility in the polymer matrix. The complexation of the materials in the SPE is confirmed in X-ray diffraction (XRD) and thermogravimetric analysis (TGA) studies. The electrochemical performance of EDLC fabricated with GO-doped SPE is examined using cyclic voltammetry and charge-discharge techniques. The maximum specific capacitance obtained is 29.6 F∙g -1 , which is observed at a scan rate of 3 mV/s in 6 wt % GO-doped, SPE-based EDLC. It also has excellent cyclic retention as it is able keep the performance of the EDLC at 94% even after 3000 cycles. These results suggest GO doped SPE plays a significant role in energy storage application.

An Approach to Solid-State Electrical Double Layer Capacitors Fabricated with Graphene Oxide-Doped, Ionic Liquid-Based Solid Copolymer Electrolytes

Directory of Open Access Journals (Sweden)

N. F. A. Fattah

2016-06-01

Full Text Available Solid polymer electrolyte (SPE composed of semi-crystalline poly (vinylidene fluoride-hexafluoropropylene [P(VdF-HFP] copolymer, 1-ethyl-3-methylimidazolium bis (trifluoromethyl sulphonyl imide [EMI-BTI] and graphene oxide (GO was prepared and its performance evaluated. The effects of GO nano-filler were investigated in terms of enhancement in ionic conductivity along with the electrochemical properties of its electrical double layer capacitors (EDLC. The GO-doped SPE shows improvement in ionic conductivity compared to the P(VdF-HFP-[EMI-BTI] SPE system due to the existence of the abundant oxygen-containing functional group in GO that assists in the improvement of the ion mobility in the polymer matrix. The complexation of the materials in the SPE is confirmed in X-ray diffraction (XRD and thermogravimetric analysis (TGA studies. The electrochemical performance of EDLC fabricated with GO-doped SPE is examined using cyclic voltammetry and charge–discharge techniques. The maximum specific capacitance obtained is 29.6 F∙g−1, which is observed at a scan rate of 3 mV/s in 6 wt % GO-doped, SPE-based EDLC. It also has excellent cyclic retention as it is able keep the performance of the EDLC at 94% even after 3000 cycles. These results suggest GO doped SPE plays a significant role in energy storage application.

Mesoporous Transition Metal Oxides for Supercapacitors.

Science.gov (United States)

Wang, Yan; Guo, Jin; Wang, Tingfeng; Shao, Junfeng; Wang, Dong; Yang, Ying-Wei

2015-10-14

Recently, transition metal oxides, such as ruthenium oxide (RuO₂), manganese dioxide (MnO₂), nickel oxides (NiO) and cobalt oxide (Co₃O₄), have been widely investigated as electrode materials for pseudo-capacitors. In particular, these metal oxides with mesoporous structures have become very hot nanomaterials in the field of supercapacitors owing to their large specific surface areas and suitable pore size distributions. The high specific capacities of these mesoporous metal oxides are resulted from the effective contacts between electrode materials and electrolytes as well as fast transportation of ions and electrons in the bulk of electrode and at the interface of electrode and electrolyte. During the past decade, many achievements on mesoporous transition metal oxides have been made. In this mini-review, we select several typical nanomaterials, such as RuO₂, MnO₂, NiO, Co₃O₄ and nickel cobaltite (NiCo₂O₄), and briefly summarize the recent research progress of these mesoporous transition metal oxides-based electrodes in the field of supercapacitors.

Iodine encapsulation in CNTs and its application for electrochemical capacitor

International Nuclear Information System (INIS)

Taniguchi, Y.; Ishii, Y.; Al-zubaidi, A.; Kawasaki, S.; Rashid, M.; Syakirin, A.

2016-01-01

We report the experimental results for new type electrochemical capacitor using iodine redox reaction in single-walled carbon nanotubes (SWCNTs). It was found that the energy density of the present redox capacitor using SWCNTs is almost three times larger than that of the normal electric double layer capacitor.

Iodine encapsulation in CNTs and its application for electrochemical capacitor

Energy Technology Data Exchange (ETDEWEB)

Taniguchi, Y.; Ishii, Y.; Al-zubaidi, A.; Kawasaki, S., E-mail: kawasaki.shinji@nitech.ac.jp [Nagoya Institute of Technology, Gokiso, Showa, Nagoya, Aichi (Japan); Rashid, M.; Syakirin, A. [Universiti Teknologi MARA (UiTM), 40450 Shah Alam, Selangor (Malaysia)

2016-07-06

We report the experimental results for new type electrochemical capacitor using iodine redox reaction in single-walled carbon nanotubes (SWCNTs). It was found that the energy density of the present redox capacitor using SWCNTs is almost three times larger than that of the normal electric double layer capacitor.

Improving the mechanical stability of a standard capacitor

CSIR Research Space (South Africa)

Moodley, SS

2003-04-01

Full Text Available temperature coefficients of capacitance, they were susceptible to mechanical shock. During 1999, a project was initiated to improve the mechanical stability of the capacitors after two capacitors were damaged during transit, while being transported as separate...

Cellulose triacetate, thin film dielectric capacitor

Science.gov (United States)

Yen, Shiao-Ping S. (Inventor); Jow, T. Richard (Inventor)

1995-01-01

Very thin films of cellulose triacetate are cast from a solution containing a small amount of high boiling temperature, non-solvent which evaporates last and lifts the film from the casting surface. Stretched, oriented, crystallized films have high electrical breakdown properties. Metallized films less than about 2 microns in thickness form self-healing electrodes for high energy density, pulsed power capacitors. Thicker films can be utilized as a dielectric for a capacitor.

Preparation of porous carbon spheres from 2-keto-l-gulonic acid mother liquor by oxidation and activation for electric double-layer capacitor application.

Science.gov (United States)

Hao, Zhi-Qiang; Cao, Jing-Pei; Zhao, Xiao-Yan; Wu, Yan; Zhu, Jun-Sheng; Dang, Ya-Li; Zhuang, Qi-Qi; Wei, Xian-Yong

2018-03-01

A novel strategy is proposed for the increase of specific surface area (SSA) of porous carbon sphere (PCS) by oxidation and activation. 2-keto-l-gulonic acid mother liquor (GAML) as a high-pollution waste has a relatively high value of reutilization. For its high value-added utilization, GAML is used as the precursor for preparation of PCS as carbon-based electrode materials for electric double-layer capacitor. PCS is prepared by hydrothermal carbonization, carbonization and KOH activation, and Fe(NO 3 ) 3 9H 2 O is used as an oxidizing agent during carbonization. The as-prepared PCS has excellent porosity and high SSA of 2478 m 2  g -1 . Meanwhile, the pore structure of PCS can be controlled by the adjustment of carbonization parameters (carbonization temperature and the loading of Fe(NO 3 ) 3 9H 2 O). Besides, the SSA and specific capacitance of PCS can be increased remarkably when Fe(NO 3 ) 3 9H 2 O is added in carbonization. The specific capacitance of PCS can reach 303.7 F g -1 at 40 mA g -1 . PCSs as electrode material have superior electrochemical stability. After 8000 cycles, the capacitance retention is 98.3% at 2 A g -1 . The electric double-layer capacitance of PCS is improved when CS is carbonized with Fe(NO 3 ) 3 9H 2 O, and the economic and environmental benefits are achieved by the effective recycle of GAML. Copyright © 2017 Elsevier Inc. All rights reserved.

Reliability Evaluation of Base-Metal-Electrode Multilayer Ceramic Capacitors for Potential Space Applications

Science.gov (United States)

Liu, David (Donhang); Sampson, Michael J.

2011-01-01

Base-metal-electrode (BME) ceramic capacitors are being investigated for possible use in high-reliability spacelevel applications. This paper focuses on how BME capacitors construction and microstructure affects their lifetime and reliability. Examination of the construction and microstructure of commercial off-the-shelf (COTS) BME capacitors reveals great variance in dielectric layer thickness, even among BME capacitors with the same rated voltage. Compared to PME (precious-metal-electrode) capacitors, BME capacitors exhibit a denser and more uniform microstructure, with an average grain size between 0.3 and 0.5 m, which is much less than that of most PME capacitors. BME capacitors can be fabricated with more internal electrode layers and thinner dielectric layers than PME capacitors because they have a fine-grained microstructure and do not shrink much during ceramic sintering. This makes it possible for BME capacitors to achieve a very high capacitance volumetric efficiency. The reliability of BME and PME capacitors was investigated using highly accelerated life testing (HALT). Most BME capacitors were found to fail with an early avalanche breakdown, followed by a regular dielectric wearout failure during the HALT test. When most of the early failures, characterized with avalanche breakdown, were removed, BME capacitors exhibited a minimum mean time-to-failure (MTTF) of more than 105 years at room temperature and rated voltage. Dielectric thickness was found to be a critical parameter for the reliability of BME capacitors. The number of stacked grains in a dielectric layer appears to play a significant role in determining BME capacitor reliability. Although dielectric layer thickness varies for a given rated voltage in BME capacitors, the number of stacked grains is relatively consistent, typically around 12 for a number of BME capacitors with a rated voltage of 25V. This may suggest that the number of grains per dielectric layer is more critical than the

Charge retention characteristics of (Bi,La)4Ti3O12 capacitors : comparison with Pb(Zr,Ti)O3 capacitors

International Nuclear Information System (INIS)

Yoon, J. G.; Kim, D. J.; So, Y. W.

2005-01-01

We investigated the retention characteristics of (Bi,La) 4 Ti 3 O 12 (BLT) capacitors with Pt electrodes and compared them with Pb(Zr,Ti)O 3 (PZT) capacitors in the same- and opposite-state retentions. Polarization relaxations in short-time regime (t < 100 s) were well described by a power-law decay function, but the polarization relaxation of BLT was more significant than that of PZT. We discuss the difference in the relaxation process of polarization in conjunction with film microstructures and magnitudes of polarization for BLT and PZT. In long-time opposite-state retention, BLT capacitors showed much better characteristics than PZT. For both BLT and PZT, the opposite-state retention loss was governed by the development of an internal field during retention. For BLT capacitors, internal field development was much weaker than for PZT after retention, resulting in a good opposite-state retention. Structural and electrical properties are discussed in conjunction with the retention characteristics of the materials.

Degradation failure model of self-healing metallized film pulse capacitor

International Nuclear Information System (INIS)

Sun Quan; Zhong Zheng; Zhou Jinglun; Zhao Jianyin; Wei Xiaofeng; Guo Liangfu; Zhou Pizhang; Li Yizheng; Chen Dehuai

2004-01-01

The high energy density self-healing metallized film pulse capacitor has been applied to all kinds of laser facilities for their power conditioning systems, whose reliability and expense are straightforwardly affected by the reliability level of the capacitors. Based on the related research in literature, this paper analyses the degradation mechanism of the capacitor, and presents a new degradation failure model--the Gauss-Poisson model. The Gauss-Poisson model divides degradation of capacitor into naturalness degradation and outburst one. Compared with traditional Weibull failure model, the new model is more precise in evaluating the lifetime of the capacitor, and the life tests for this model are simple in design, and lower in the cost of time or expense. The Gauss-Poisson model will be a fine and widely used degradation disable model. (author)

Capacitance of carbon-based electrical double-layer capacitors.

Science.gov (United States)

Ji, Hengxing; Zhao, Xin; Qiao, Zhenhua; Jung, Jeil; Zhu, Yanwu; Lu, Yalin; Zhang, Li Li; MacDonald, Allan H; Ruoff, Rodney S

2014-01-01

Experimental electrical double-layer capacitances of porous carbon electrodes fall below ideal values, thus limiting the practical energy densities of carbon-based electrical double-layer capacitors. Here we investigate the origin of this behaviour by measuring the electrical double-layer capacitance in one to five-layer graphene. We find that the capacitances are suppressed near neutrality, and are anomalously enhanced for thicknesses below a few layers. We attribute the first effect to quantum capacitance effects near the point of zero charge, and the second to correlations between electrons in the graphene sheet and ions in the electrolyte. The large capacitance values imply gravimetric energy storage densities in the single-layer graphene limit that are comparable to those of batteries. We anticipate that these results shed light on developing new theoretical models in understanding the electrical double-layer capacitance of carbon electrodes, and on opening up new strategies for improving the energy density of carbon-based capacitors.

Neural network for optimal capacitor placement and its impact on power quality in electric distribution systems

International Nuclear Information System (INIS)

Mohamed, A.A.E.S.

2013-01-01

Capacitors are widely installed in distribution systems for reactive power compensation to achieve power and energy loss reduction, voltage regulation and system capacity release. The extent of these benefits depends greatly on how the capacitors are placed on the system. The problem of how to place capacitors on the system such that these benefits are achieved and maximized against the cost associated with the capacitor placement is termed the general capacitor placement problem. The capacitor placement problem has been formulated as the maximization of the savings resulted from reduction in both peak power and energy losses considering capacitor installation cost and maintaining the buses voltage within acceptable limits. After an appropriate analysis, the optimization problem was formulated in a quadratic form. For solving capacitor placement a new combinatorial heuristic and quadratic programming technique has been presented and applied in the MATLAB software. The proposed strategy was applied on two different radial distribution feeders. The results have been compared with previous works. The comparison showed the validity and the effectiveness of this strategy. Secondly, two artificial intelligence techniques for predicting the capacitor switching state in radial distribution feeders have been investigated; one is based on basis Radial Basis Neural Network (RBNN) and the other is based on Adaptive Neuro-Fuzzy Inference System (ANFIS). The ANFIS technique gives better results with a minimum total error compared to RBNN. The learning duration of ANFIS was very short than the neural network case. It implied that ANFIS reaches to the target faster than neural network. Thirdly, an artificial intelligence (RBNN) approach for estimation of transient overvoltage during capacitor switching has been studied. The artificial intelligence approach estimated the transient overvoltages with a minimum error in a short computational time. Finally, a capacitor switching

Fabrication and electrical properties of metal-oxide semiconductor capacitors based on polycrystalline p-Cu{sub x}O and HfO{sub 2}/SiO{sub 2} high-{kappa} stack gate dielectrics

Energy Technology Data Exchange (ETDEWEB)

Zou Xiao [Department of Electronic Science and Technology, School of Physical Science and Technology, Wuhan University, Wuhan, 430074 (China); Department of Electromachine Engineering, Jianghan University, Wuhan, 430056 (China); Fang Guojia, E-mail: gjfang@whu.edu.c [Department of Electronic Science and Technology, School of Physical Science and Technology, Wuhan University, Wuhan, 430074 (China); Yuan Longyan; Liu Nishuang; Long Hao; Zhao Xingzhong [Department of Electronic Science and Technology, School of Physical Science and Technology, Wuhan University, Wuhan, 430074 (China)

2010-05-31

Polycrystalline p-type Cu{sub x}O films were deposited after the growth of HfO{sub 2} dielectric on Si substrate by pulsed laser deposition, and Cu{sub x}O metal-oxide-semiconductor (MOS) capacitors with HfO{sub 2}/SiO{sub 2} stack gate dielectric were primarily fabricated and investigated. X-ray diffraction and X-ray photoelectron spectroscopy were applied to analyze crystalline structure and Cu{sup +}/Cu{sup 2+} ratios of Cu{sub x}O films respectively. SiO{sub 2} interlayer formed between the high-{kappa} dielectric and substrate was estimated by the transmission electron microscope. Results of electrical characteristic measurement indicate that the permittivity of HfO{sub 2} is about 22, and the gate leakage current density of MOS capacitor with 11.3 nm HfO{sub 2}/SiO{sub 2} stack dielectrics is {approx} 10{sup -4} A/cm{sup 2}. Results also show that the annealing in N{sub 2} can improve the quality of Cu{sub x}O/HfO{sub 2} interface and thus reduce the gate leakage density.

Reduction of graphene oxide by aniline with its concomitant oxidative polymerization.

Science.gov (United States)

Xu, Li Qun; Liu, Yi Liang; Neoh, Koon-Gee; Kang, En-Tang; Fu, Guo Dong

2011-04-19

Graphene oxide (GO) nanosheets are readily reduced by aniline above room temperature in an aqueous acid medium, with the aniline simultaneously undergoing oxidative polymerization to produce the reduced graphene oxide-polyaniline nanofiber (RGO-PANi) composites. The resulting RGO-PANi composites and RGO (after dissolution of PANi) were characterized by XPS, XRD analysis, TGA, UV-visible absorption spectroscopy, and TEM. It was also found that the RGO-PANi composites exhibit good specific capacitance during galvanostatic charging-discharging when used as capacitor electrodes. Copyright © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

An Active Capacitor with Self-Power and Internal Feedback Control Signals

DEFF Research Database (Denmark)

Wang, Haoran; Wang, Huai

2017-01-01

This paper proposes a concept of two-terminal active capacitor implemented by power semiconductor switches and passive elements. The active capacitor has the same level of convenience as a passive one with two power terminals only. A control strategy that does not require any external feedback...... signal is proposed and a self-power scheme for gate drivers and the controller is applied to achieve the two-terminal active capacitor. The concept, control method, self-power scheme, efficiency, and impedance characteristics of the active capacitor are presented. A case study of the proposed active...... capacitor for a capacitive DC-link application is discussed. The results reveal a significantly lower overall energy storage of passive elements and a reduced cost to fulfill a specific reliability target, compared to a passive capacitor solution. Proof-of-concept experimental results are given to verify...

Dynamics of a Liquid Dielectric Attracted by a Cylindrical Capacitor

Science.gov (United States)

Nardi, Rafael; Lemos, Nivaldo A.

2007-01-01

The dynamics of a liquid dielectric attracted by a vertical cylindrical capacitor are studied. Contrary to what might be expected from the standard calculation of the force exerted by the capacitor, the motion of the dielectric is different depending on whether the charge or the voltage of the capacitor is held constant. The problem turns out to…

Evaluating the effect placement capacitor and distributed photovoltaic generation for power system losses minimization in radial distribution system

Science.gov (United States)

Rahman, Yuli Asmi; Manjang, Salama; Yusran, Ilham, Amil Ahmad

2018-03-01

Power loss minimization have many advantagess to the distribution system radial among others reduction of power flow in feeder lines, freeing stress on feeder loading, deterrence of power procurement from the grid and also the cost of loss compensating instruments. This paper, presents capacitor and photovoltaic (PV) placement as alternative means to decrease power system losses. The paper aims to evaluate the best alternative for decreasing power system losses and improving voltage profile in the radial distribution system. To achieve the objectives of paper, they are used three cases tested by Electric Transient and Analysis Program (ETAP) simulation. Firstly, it performs simulation of placement capacitor. Secondly, simulated placement of PV. Lastly, it runs simulation of placement capacitor and PV simultaneously. The simulations were validated using the IEEE 34-bus test system. As a result, they proved that the installation of capacitor and PV integration simultaneously leading to voltage profile correction and power losses minimization significantly.

Voltage Drop in a Ferroelectric Single Layer Capacitor by Retarded Domain Nucleation.

Science.gov (United States)

Kim, Yu Jin; Park, Hyeon Woo; Hyun, Seung Dam; Kim, Han Joon; Kim, Keum Do; Lee, Young Hwan; Moon, Taehwan; Lee, Yong Bin; Park, Min Hyuk; Hwang, Cheol Seong

2017-12-13

Ferroelectric (FE) capacitor is a critical electric component in microelectronic devices. Among many of its intriguing properties, the recent finding of voltage drop (V-drop) across the FE capacitor while the positive charges flow in is especially eye-catching. This finding was claimed to be direct evidence that the FE capacitor is in negative capacitance (NC) state, which must be useful for (infinitely) high capacitance and ultralow voltage operation of field-effect transistors. Nonetheless, the NC state corresponds to the maximum energy state of the FE material, so it has been widely accepted in the community that the material alleviates that state by forming ferroelectric domains. This work reports a similar V-drop effect from the 150 nm thick epitaxial BaTiO 3 ferroelectric thin film, but the interpretation was completely disparate; the V-drop can be precisely simulated by the reverse domain nucleation and propagation of which charge effect cannot be fully compensated for by the supplied charge from the external charge source. The disappearance of the V-drop effect was also observed by repeated FE switching only up to 10 cycles, which can hardly be explained by the involvement of the NC effect. The retained reverse domain nuclei even after the subsequent poling can explain such behavior.

Charging damage in floating metal-insulator-metal capacitors

NARCIS (Netherlands)

Ackaert, Jan; Wang, Zhichun; De Backer, E.; Coppens, P.

2002-01-01

In this paper, charging induced damage (CID) to metal-insulator-metal capacitors (MIMC) is reported. The damage is caused by the build up of a voltage potential difference between the two plates of the capacitor. A simple logarithmic relation is discovered between the damage by this voltage

Clocking Scheme for Switched-Capacitor Circuits

DEFF Research Database (Denmark)

Steensgaard-Madsen, Jesper

1998-01-01

A novel clocking scheme for switched-capacitor (SC) circuits is presented. It can enhance the understanding of SC circuits and the errors caused by MOSFET (MOS) switches. Charge errors, and techniques to make SC circuits less sensitive to them are discussed.......A novel clocking scheme for switched-capacitor (SC) circuits is presented. It can enhance the understanding of SC circuits and the errors caused by MOSFET (MOS) switches. Charge errors, and techniques to make SC circuits less sensitive to them are discussed....

Influence of test capacitor features on piezoelectric and dielectric measurement of ferroelectric films.

Science.gov (United States)

Wang, Zhihong; Lau, Gih Keong; Zhu, Weiguang; Chao, Chen

2006-01-01

This paper presents both theoretical and numerical analyses of the piezoelectric and dielectric responses of a highly idealized film-on-substrate system, namely, a polarized ferroelectric film perfectly bonded to an elastic silicon substrate. It shows that both effective dielectric and piezoelectric properties of the films change with the size and configuration of the test capacitor. There exists a critical electrode size that is smaller than the diameter of the commonly used substrate. The effective film properties converge to their respective constrained values as capacitor size increases to the critical size. If capacitor size is smaller than the critical size, the surface displacement at the top electrode deviates from the net thickness change in response to an applied voltage because the film is deformable at the film/substrate interface. The constrained properties of the films depend only on those of bulk ferroelectrics but are independent of film thickness and substrate properties. The finding of the critical capacitor size together with analytical expressions of the constrained properties makes it possible to realize consistent measurement of piezoelectric and dielectric properties of films. A surface scanning technique is recommended to measure the profile of piezoresponses of the film so that the constrained properties of the film can be identified accurately.

Effects of 6 MeV electron irradiation on the electrical properties and device parameters of Al/Al2O3/TiO2/n-Si MOS capacitors

International Nuclear Information System (INIS)

Laha, P.; Banerjee, I.; Barhai, P.K.; Das, A.K.; Bhoraskar, V.N.; Mahapatra, S.K.

2012-01-01

Highlights: ► The electron irradiation effects make variation in the device parameters. ► The device parameters changes due to percentage of defects and charge trapping. ► Leakage current of Al/Al 2 O 3 /TiO 2 /n-Si changes due to interface dangling bonds. ► The leakage current mechanism of MOS structures is due to Poole–Frenkel effect. - Abstract: The effects of 6 MeV electron irradiation on the electrical properties and device parameter characteristics of Al/Al 2 O 3 /TiO 2 /n-Si metal–oxide–semiconductor capacitors have been studied. Twelve Al/Al 2 O 3 /TiO 2 /n-Si MOS capacitors were fabricated using r.f. magnetron sputtering and divided into four groups. The first group was not irradiated and treated as virgin. The rest were irradiated with 6 MeV electrons at doses 10, 20, and 30 kGy, maintaining the dose rate at ∼1 kGy/min. Variations in crystallinity of the virgin and irradiated capacitors were studied using grazing incident X-ray diffraction. The thickness and in-depth elemental distributions of individual layers were determined using secondary ion mass apectrometry. Capacitance–voltage, conductance–voltage and leakage current–voltage characteristics of the virgin and irradiated samples were studied. The device parameters (flat band voltage, surface charge density and interface trap density of the virgin and irradiated structures) were determined. The electrical properties of the capacitors were investigated and the Poole–Frenkel coefficient of the capacitors was determined from leakage current measurements. The leakage current mechanism has been explained.

Cracking Problems and Mechanical Characteristics of PME and BME Ceramic Capacitors

Science.gov (United States)

Teverovsky, Alexander

2018-01-01

Most failures in MLCCs are caused by cracking that create shorts between opposite electrodes of the parts. A use of manual soldering makes this problem especially serious for space industry. Experience shows that different lots of ceramic capacitors might have different susceptibility to cracking under manual soldering conditions. This simulates a search of techniques that would allow revealing capacitors that are most robust to soldering-induced stresses. Currently, base metal electrode (BME) capacitors are introduced to high-reliability applications as a replacement of precious metal electrode (PME) parts. Understanding the difference in the susceptibility to cracking between PME and BME capacitors would facilitate this process. This presentation gives a review of mechanical characteristics measured in-situ on MLCCs that includes flexural strength, Vickers hardness, indentation fracture toughness, and the board flex testing and compare characteristics of BME and PME capacitors. A history case related to cracking in PME capacitors that caused flight system malfunctions and mechanisms of failure are considered. Possible qualification tests that would allow evaluation of the resistance of MLCCs to manual soldering are suggested and perspectives related to introduction of BME capacitors discussed.

Stretchable Dual-Capacitor Multi-Sensor for Touch-Curvature-Pressure-Strain Sensing.

Science.gov (United States)

Jin, Hanbyul; Jung, Sungchul; Kim, Junhyung; Heo, Sanghyun; Lim, Jaeik; Park, Wonsang; Chu, Hye Yong; Bien, Franklin; Park, Kibog

2017-09-07

We introduce a new type of multi-functional capacitive sensor that can sense several different external stimuli. It is fabricated only with polydimethylsiloxane (PDMS) films and silver nanowire electrodes by using selective oxygen plasma treatment method without photolithography and etching processes. Differently from the conventional single-capacitor multi-functional sensors, our new multi-functional sensor is composed of two vertically-stacked capacitors (dual-capacitor). The unique dual-capacitor structure can detect the type and strength of external stimuli including curvature, pressure, strain, and touch with clear distinction, and it can also detect the surface-normal directionality of curvature, pressure, and touch. Meanwhile, the conventional single-capacitor sensor has ambiguity in distinguishing curvature and pressure and it can detect only the strength of external stimulus. The type, directionality, and strength of external stimulus can be determined based on the relative capacitance changes of the two stacked capacitors. Additionally, the logical flow reflected on a tree structure with its branches reaching the direction and strength of the corresponding external stimulus unambiguously is devised. This logical flow can be readily implemented in the sensor driving circuit if the dual-capacitor sensor is commercialized actually in the future.

Protective systems and its protective switching elements on local failures of large slow-capacitor bank system

International Nuclear Information System (INIS)

Hasegawa, Mitsuo; Inoue, Kunikazu; Ueno, Isao.

1994-01-01

In various applications of pulsed power technologies, large capacitor bank systems are used to feed high current impulse to different experimental devices. The accidental electric breakdown in one of the capacitors in a parallel connection of the large bank may result in serious damages such as mechanical explosion and oil effusion or fire. In most fast banks, each unit capacitor has an output gap switch, which is expected to decouple the capacitors one another. However, no such special element is adopted usually in the slow bank system, partly because of the economical consideration. We have developed a novel and inexpensive protective element for these relatively slow capacitor banks, utilizing a concept of the enclosed type of the fast breakers. The principle of the operation of the protection elements is verified by a simulation experiment. Their practical effectiveness is also successfully demonstrated in the application to the system of the pulsed high magnetic field generator. (author)

Electric converters of electromagnetic strike machine with capacitor supply

Science.gov (United States)

Usanov, K. M.; Volgin, A. V.; Kargin, V. A.; Moiseev, A. P.; Chetverikov, E. A.

2018-03-01

The application of pulse linear electromagnetic engines in small power strike machines (energy impact is 0.01...1.0 kJ), where the characteristic mode of rare beats (pulse seismic vibrator, the arch crash device bins bulk materials), is quite effective. At the same time, the technical and economic performance of such machines is largely determined by the ability of the power source to provide a large instantaneous power of the supply pulses in the winding of the linear electromagnetic motor. The use of intermediate energy storage devices in power systems of rare-shock LEME makes it possible to obtain easily large instantaneous powers, forced energy conversion, and increase the performance of the machine. A capacitor power supply of a pulsed source of seismic waves is proposed for the exploration of shallow depths. The sections of the capacitor storage (CS) are connected to the winding of the linear electromagnetic motor by thyristor dischargers, the sequence of activation of which is determined by the control device. The charge of the capacitors to the required voltage is made directly from the battery source, or through the converter from a battery source with a smaller number of batteries.

SUPER-CAPACITOR APPLICATION IN ELECTRICAL POWER CABLE TESTING FACILITIES IN THERMAL ENDURANCE AND MECHANICAL BRACING TESTS

Directory of Open Access Journals (Sweden)

I. V. Oleksyuk

2015-01-01

Full Text Available The current-carrying cores of the electrical power cables should be resistant to effects of short-circuit currents whose values depend on the material of the core, its cross-sectional area, cable insulation properties, environment temperature, and the duration of the short-circuit current flow (1 and 3–4 sec. when tested for thermal endurance and mechanical bracing. The facilities for testing the 10 kV aluminum core cables with short-circuit current shall provide mechanical-bracing current 56,82 kA and thermal endurance current 11,16 kA. Although capacitors provide such values of the testing currents to the best advantage, utilizing conventional capacitor-units will involve large expenditures for erecting and  running a separate building. It is expedient to apply super-capacitors qua the electric power supply for testing facilities, as they are capacitors with double-electrical layer and involve the current values of tens of kilo-amperes.The insulation voltage during short-circuit current testing being not-standardized, it is not banned to apply voltages less than 10 kV when performing short-circuit thermal endurance and mechanical bracing tests for electrical power cables of 10 kV. The super-capacitor voltage variation-in-time graph consists of two regions: capacitive and resistive. The capacitive part corresponds to the voltage change consequent on the energy change in the super-capacitors. The resistive part shows the voltage variation due to the active resistance presence in the super-capacitor.The author offers the algorithm determining the number of super capacitors requisite for testing 10 kV-electrical power cables with short-circuit currents for thermal endurance and mechanical bracing. The paper shows that installation of super-capacitors in the facilities testing the cables with short-circuit currents reduces the area needed for the super-capacitors in comparison with conventional capacitors more than by one order of magnitude.

Transmission Line Resonator Segmented with Series Capacitors

DEFF Research Database (Denmark)

Zhurbenko, Vitaliy; Boer, Vincent; Petersen, Esben Thade

2016-01-01

Transmission line resonators are often used as coils in high field MRI. Due to distributed nature of such resonators, coils based on them produce inhomogeneous field. This work investigates application of series capacitors to improve field homogeneity along the resonator. The equations for optimal...... values of evenly distributed capacitors are presented. The performances of the segmented resonator and a regular transmission line resonator are compared....

Graphene double-layer capacitor with ac line-filtering performance.

Science.gov (United States)

Miller, John R; Outlaw, R A; Holloway, B C

2010-09-24

Electric double-layer capacitors (DLCs) can have high storage capacity, but their porous electrodes cause them to perform like resistors in filter circuits that remove ripple from rectified direct current. We have demonstrated efficient filtering of 120-hertz current with DLCs with electrodes made from vertically oriented graphene nanosheets grown directly on metal current collectors. This design minimized electronic and ionic resistances and produced capacitors with RC time constants of less than 200 microseconds, in contrast with ~1 second for typical DLCs. Graphene nanosheets have a preponderance of exposed edge planes that greatly increases charge storage as compared with that of designs that rely on basal plane surfaces. Capacitors constructed with these electrodes could be smaller than the low-voltage aluminum electrolyte capacitors that are typically used in electronic devices.

Graphene Double-Layer Capacitor with ac Line-Filtering Performance

Science.gov (United States)

Miller, John R.; Outlaw, R. A.; Holloway, B. C.

2010-09-01

Electric double-layer capacitors (DLCs) can have high storage capacity, but their porous electrodes cause them to perform like resistors in filter circuits that remove ripple from rectified direct current. We have demonstrated efficient filtering of 120-hertz current with DLCs with electrodes made from vertically oriented graphene nanosheets grown directly on metal current collectors. This design minimized electronic and ionic resistances and produced capacitors with RC time constants of less than 200 microseconds, in contrast with ~1 second for typical DLCs. Graphene nanosheets have a preponderance of exposed edge planes that greatly increases charge storage as compared with that of designs that rely on basal plane surfaces. Capacitors constructed with these electrodes could be smaller than the low-voltage aluminum electrolyte capacitors that are typically used in electronic devices.

Problems of increasing specific characteristics of pulse capacitors and cables

International Nuclear Information System (INIS)

Kuchinskij, G.S.; Monastyrskij, A.E.; Shilin, O.V.

1984-01-01

Requirements for high specific energy are practically related to all types of pulse capacitors of energy storage. At present the specific energy for most types of home and foreign pulse capacitors is about 0.1 MJ/m 3 at operating electric field intensity 70-100 kV/mm. It is shown that the basic means for increasing the specific energy and working intensity is the application of new polymeric film materials. Application of paper-film and film insulation permits to develop the specific types of capacitors designed for a limited service life in an aperiodic discharge mode with lower reliabiliy and the specific energy upto 0.5 MJ/m 3 . Characteristics of separate types of pulse capacitors and cables are given, and reliability criterion is considered. Measures of increasing reliability and service life for pulse capacitors and cables, used as tokamak power supplies are enumerated

The two-capacitor problem revisited: a mechanical harmonic oscillator model approach

International Nuclear Information System (INIS)

Lee, Keeyung

2009-01-01

The well-known two-capacitor problem, in which exactly half the stored energy disappears when a charged capacitor is connected to an identical capacitor, is discussed based on the mechanical harmonic oscillator model approach. In the mechanical harmonic oscillator model, it is shown first that exactly half the work done by a constant applied force is dissipated irrespective of the form of dissipation mechanism when the system comes to a new equilibrium after a constant force is abruptly applied. This model is then applied to the energy loss mechanism in the capacitor charging problem or the two-capacitor problem. This approach allows a simple explanation of the energy dissipation mechanism in these problems and shows that the dissipated energy should always be exactly half the supplied energy whether that is caused by the Joule heat or by the radiation. This paper, which provides a simple treatment of the energy dissipation mechanism in the two-capacitor problem, is suitable for all undergraduate levels

Simulation and analysis of transient over voltages due to capacitor banks switching

International Nuclear Information System (INIS)

Jadid, Sh.; Yazdanpanah, D.

2002-01-01

The switching of any capacitor bank produces over voltages. Transient overvoltage will always occur in the switching device, the switching of shunt capacitor bank has become the most common source of transient voltage on power systems. Transient over voltages due to switching the capacitor bands hurt not only to the capacitor banks, but also to other equipment, such as circuit breakers and transformers. Several methods are available for reducing energising transients. These devices include pre-insertion resistors, pre-insertion inductors,synchronous closing, and MOV arresters. However, not all are practical or economical. The other important problem is existence of capacitor banks in presence of harmonics.Capacitors do not produce harmonics;however,the addition of capacitors to the electrical system will change the frequency response characteristics of the system will change the frequency response characteristics of the system, and in some cases can result in magnification of the voltage and current distortion in the system. In other word in presence of harmonic-producing loads,the capacitors used for power factor correction,may cause parallel resonance with the system inductance, so they increase the total harmonic distortion of voltage and current waveforms

Electrode/Dielectric Strip For High-Energy-Density Capacitor

Science.gov (United States)

Yen, Shiao-Ping S.

1994-01-01

Improved unitary electrode/dielectric strip serves as winding in high-energy-density capacitor in pulsed power supply. Offers combination of qualities essential for high energy density: high permittivity of dielectric layers, thinness, and high resistance to breakdown of dielectric at high electric fields. Capacitors with strip material not impregnated with liquid.

Reliability of Capacitors for DC-Link Applications in Power Electronic Converters

DEFF Research Database (Denmark)

Wang, Huai; Blaabjerg, Frede

2014-01-01

DC-link capacitors are an important part in the majority of power electronic converters which contribute to cost, size and failure rate on a considerable scale. From capacitor users' viewpoint, this paper presents a review on the improvement of reliability of dc link in power electronic converters...... from two aspects: 1) reliability-oriented dc-link design solutions; 2) conditioning monitoring of dc-link capacitors during operation. Failure mechanisms, failure modes and lifetime models of capacitors suitable for the applications are also discussed as a basis to understand the physics......-of-failure. This review serves to provide a clear picture of the state-of-the-art research in this area and to identify the corresponding challenges and future research directions for capacitors and their dc-link applications....

Theoretical and experimental analysis of inverter fed induction motor system under DC link capacitor failure

Directory of Open Access Journals (Sweden)

Hadeed A. Sher

2017-04-01

Full Text Available In this paper theoretical and experimental analysis of an AC–DC–AC inverter under DC link capacitor failure is presented. The failure study conducted for this paper is the open circuit of the DC link capacitor. The presented analysis incorporates the results for both single and three phase AC input. It has been observed that the higher ripple frequency provides better ride through capability for this fault. Furthermore, the effects of this fault on electrical characteristics of AC–DC–AC inverter and mechanical properties of the induction motor are also presented. Moreover, the effect of pulsating torque as a result of an open circuited DC link capacitor is also taken into consideration. Theoretical analysis is supported by computer aided simulation as well as with a real time experimental prototype.

Single ICCII Sinusoidal Oscillators Employing Grounded Capacitors

Directory of Open Access Journals (Sweden)

J. W. Horng

2011-09-01

Full Text Available Two inverting second-generation current conveyors (ICCII based sinusoidal oscillators are presented. The first sinusoidal oscillator is composed of one ICCII, two grounded capacitors and two resistors. The oscillation condition and oscillation frequency can be orthogonally controllable. The second sinusoidal oscillator is composed of one ICCII, two grounded capacitors and three resistors. The oscillation condition and oscillation frequency can be independently controllable through different resistors.

Impedance measurement and modelling of super-capacitors for railway applications

Energy Technology Data Exchange (ETDEWEB)

Hammar, A.; Chabas, J. [Societe Nationale des Chemins de fer Francais (SNCF), Dir. de la Recherche, 75 - Paris (France); Coquery, G.; Lallemand, R. [Institut National de Recherche sur les Transports et leur Securite (INRETS), Lab. des Technologies Nouvelles, 94 - Arcueil (France); Rojat, G.; Venet, P. [Lyon-1 Univ. Claude Bernard, CEGELY, 69 - Villeurbanne (France)

2004-07-01

Railways and electrical traction systems require high power rates to achieve their operating performances. Systems of power supply based on super-capacitors should offer high power density along with good energy efficiency and expected operating safety. We investigate general behaviours of super-capacitors with two powerful methods of analysis. The first is constant charge/discharge current at high level value (500 A), the second is impedance spectroscopy which leads to the acquisition of a set of parameters that are considered sufficient to describe general properties of super-capacitor, in particular the state of health and the available energy in any operating conditions. An electrical circuit model is defined for super-capacitors based on activated carbon and organic electrolyte. It takes into account the dependence of super-capacitor to voltage and current. The mixture of data of the two methods permits to obtain a representative model for power applications. Matlab/Simulink simulations are shown to verify the validity of the model. (authors)

Capacitor voltage ripple reduction and arm energy balancing in MMC-HVDC

DEFF Research Database (Denmark)

Parikh, Harsh; Martin-Loeches, Ruben Sánches; Tsolaridis, Georgios

2016-01-01

Modular Multilevel Converters are emerging and widely used in HVDC applications. However, the submodule capacitors are still large and the energy balancing under unbalanced conditions is a challenge. In this paper, an analytical model focusing on the energy stored in the capacitors and voltage...... variations is utilized in order to achieve better performance. By injecting a second order harmonic component into the circulating current, the energy variation and consequently the capacitor voltage ripple is reduced allowing for a capacitor size reduction. At the same time, an arm energy balancing...

Mesoporous Transition Metal Oxides for Supercapacitors

Science.gov (United States)

Wang, Yan; Guo, Jin; Wang, Tingfeng; Shao, Junfeng; Wang, Dong; Yang, Ying-Wei

2015-01-01

Recently, transition metal oxides, such as ruthenium oxide (RuO2), manganese dioxide (MnO2), nickel oxides (NiO) and cobalt oxide (Co3O4), have been widely investigated as electrode materials for pseudo-capacitors. In particular, these metal oxides with mesoporous structures have become very hot nanomaterials in the field of supercapacitors owing to their large specific surface areas and suitable pore size distributions. The high specific capacities of these mesoporous metal oxides are resulted from the effective contacts between electrode materials and electrolytes as well as fast transportation of ions and electrons in the bulk of electrode and at the interface of electrode and electrolyte. During the past decade, many achievements on mesoporous transition metal oxides have been made. In this mini-review, we select several typical nanomaterials, such as RuO2, MnO2, NiO, Co3O4 and nickel cobaltite (NiCo2O4), and briefly summarize the recent research progress of these mesoporous transition metal oxides-based electrodes in the field of supercapacitors. PMID:28347088

Mesoporous Transition Metal Oxides for Supercapacitors

Directory of Open Access Journals (Sweden)

Yan Wang

2015-10-01

Full Text Available Recently, transition metal oxides, such as ruthenium oxide (RuO2, manganese dioxide (MnO2, nickel oxides (NiO and cobalt oxide (Co3O4, have been widely investigated as electrode materials for pseudo-capacitors. In particular, these metal oxides with mesoporous structures have become very hot nanomaterials in the field of supercapacitors owing to their large specific surface areas and suitable pore size distributions. The high specific capacities of these mesoporous metal oxides are resulted from the effective contacts between electrode materials and electrolytes as well as fast transportation of ions and electrons in the bulk of electrode and at the interface of electrode and electrolyte. During the past decade, many achievements on mesoporous transition metal oxides have been made. In this mini-review, we select several typical nanomaterials, such as RuO2, MnO2, NiO, Co3O4 and nickel cobaltite (NiCo2O4, and briefly summarize the recent research progress of these mesoporous transition metal oxides-based electrodes in the field of supercapacitors.

Observation of band bending of metal/high-k Si capacitor with high energy x-ray photoemission spectroscopy and its application to interface dipole measurement

Science.gov (United States)

Kakushima, K.; Okamoto, K.; Tachi, K.; Song, J.; Sato, S.; Kawanago, T.; Tsutsui, K.; Sugii, N.; Ahmet, P.; Hattori, T.; Iwai, H.

2008-11-01

Band bendings of Si substrates have been observed using hard x-ray photoemission spectroscopy. With a capability of collecting photoelectrons generated as deep as 40 nm, the binding energy shift in a core level caused by the potential profile at the surface of the substrate results in a spectrum broadening. The broadening is found to be significant when heavily doped substrates are used owing to its steep potential profile. The surface potential of the substrate can be obtained by deconvolution of the spectrum. This method has been applied to observe the band bending profile of metal-oxide-semiconductor capacitors with high-k gate dielectrics. By comparing the band bending profiles of heavily-doped n+- and p+-Si substrates, the interface dipoles presented at interfaces can be estimated. In the case of W gated La2O3/La-silicate capacitor, an interface dipole to shift the potential of -0.45 V has been estimated at La-silicate/Si interface, which effectively reduces the apparent work function of W. On the other hand, an interface dipole of 0.03-0.07 V has been found to exist at Hf-silicate/SiO2 interface for W gated HfO2/Hf-silicate/SiO2 capacitor.

Effects of annealing temperature on the characteristics of ALD-deposited HfO2 in MIM capacitors

International Nuclear Information System (INIS)

Jeong, S.-W.; Lee, H.J.; Kim, K.S.; You, M.T.; Roh, Y.; Noguchi, T.; Xianyu, W.; Jung, J.

2006-01-01

We have investigated the annealing effects of HfO 2 films deposited by an atomic layer deposition (ALD) method on the electrical and physical properties in the Si/SiO 2 /Pt/ALD-HfO 2 /Pd metal-insulator-metal (MIM) capacitors. If the annealing temperature for HfO 2 films was restricted below 500 deg. C, an annealing step using a rapid thermal processor (RTP) improves the electrical properties such as the dissipation factor and the dielectric constant. On the other hand, annealing at 700 deg. C degrades the electrical characteristics in general; the dissipation factor increases over the frequency range of 1∼4 MHz, and the leakage current increases up to 2 orders at the low electric field regions. We found that the degradation of electrical properties is due to the grain growth in the HfO 2 film (i.e., poly-crystallization of the film) by the high temperature annealing processing. We suggested that the annealing temperature must be restricted below 500 deg. C to obtain the high quality high-k film for the MIM capacitors

Power loss and energy density of the asymmetric ultracapacitor loaded with molybdenum doped manganese oxide

International Nuclear Information System (INIS)

Wang, Yue-Sheng; Tsai, Dah-Shyang; Chung, Wen-Hung; Syu, Yong-Sin; Huang, Ying-Sheng

2012-01-01

Highlights: ► Mo-doping (15 mol%) enhances capacitance and diminishes oxide resistance. ► Influences of Mo-doped MnO 2 are analyzed at the level of capacitor power and energy. ► Polarization loss of the asymmetric capacitor is more than that of the symmetric one. ► Pseudocapacitance benefit on energy is evaluated with power and current densities. - Abstract: Ultracapacitors of asymmetric configuration have been prepared with activated carbon (AC) and undoped or Mo-doped manganese oxide (MnO 2 ) in 1.0 M Na 2 SO 4 electrolyte. Phase analysis shows the AC powder, 1–15 μm in size, contains both disordered and graphitic structures, and the undoped and Mo-doped oxide powder, 0.05–0.20 μm in particle size, mainly involves amorphous MnO 2 and MoO 2 . CV results indicate the single electrode of AC plus 10 wt% Mo-doped MnO 2 (A9O M 1) is superior to the electrode with undoped MnO 2 or high content of doped MnO 2 , exhibiting features of double layer capacitance at high scan rate and pseudocapacitance characteristics at low scan rate. When assembled with a negative electrode of AC, the capacitor of positive A9O M 1 electrode demonstrates the least power loss among three asymmetric capacitors. This asymmetric capacitor also shows a higher capacitance than the symmetric AC capacitor when the current density is less than 8.0 A g −1 in 1.8 V potential window. But a higher electrode resistance of A9O M 1, in contrast with AC, compromises its capacitance plus. When the energy density of A9O M 1 asymmetric capacitor is compared with that of symmetric AC capacitor at the same power level, the capacitance benefit on energy density is restricted to current density ≤ 3.0 A g −1 .

Capacitor Bank 'CHANDI' for Plasma Target Production for Liner Plasma Interaction

International Nuclear Information System (INIS)

Shukla, R.; Sharma, S.K.; Debnath, K.; Shyam, A.

2006-01-01

A capacitor bank is fabricated to drive (JXB) Plasma gun to generate hot plasma (target) for liner plasma investigation. The bank will also be used for driving other pintch experiments. The bank consists of 8 capacitors connected in parallel, each having capacitance of 178 μF giving a total of 1424uF. The bank is charged at 15 kV using a 28 kV power supply charging the capacitors in 65 seconds utilizing full wave charging technique. The total energy of the bank is 160kJ at 15kV. A modeling of power supply was done so that all the components involved are utilized to their operating limit safely. Moreover to give fault protection to the capacitor bank we have implemented the neutral control technique in the power supply. The capacitor bank is discharged to the inductive load through an ignitron switch of very high coulomb rating and capable of withstanding high voltages at its electrodes. The cables used for connecting capacitor bank with ignitron switch are used in parallel to give them collective capability of bearing capacitor discharge currents. These cables are capable of holding high DC voltages (40kV), which appear at the time of charging of the bank. The bank is tested and is operational

Antenna Miniaturization with MEMS Tunable Capacitors

DEFF Research Database (Denmark)

Barrio, Samantha Caporal Del; Morris, Art; Pedersen, Gert Frølund

2014-01-01

In today’s mobile device market, there is a strong need for efficient antenna miniaturization. Tunable antennas are a very promising way to reduce antenna volume while enlarging its operating bandwidth. MEMS tunable capacitors are state-ofthe- art in terms of insertion loss and their characterist......In today’s mobile device market, there is a strong need for efficient antenna miniaturization. Tunable antennas are a very promising way to reduce antenna volume while enlarging its operating bandwidth. MEMS tunable capacitors are state-ofthe- art in terms of insertion loss...

Input-parallel output-parallel (IPOP) three-level (TL) DC/DC converters with minimized capacitor ripple currents

DEFF Research Database (Denmark)

Liu, Dong; Deng, Fujin; Zhang, Qi

2016-01-01

, the component current stresses in the proposed converters are reduced. More significantly, the combination of the proposed IPOP TL circuit structure and the interleaving control strategy can largely reduce the ripple currents on the two input capacitors not only by doubling the frequencies of the ripple...... currents on two input capacitors but also by counteracting part of these ripple currents according to the operation principle of the proposed converters. Therefore, the proposed IPOP TL DC/DC converters with the interleaving control strategy can improve the performances of the converters in increasing...... the lifetimes of the input capacitors and minimizing the sizes of the input capacitors. Finally, the simulation and experimental results are presented to verify the effectiveness and feasibility of the proposed converters combined with the interleaving control strategy....

Generation of amorphous ceramic capacitor coatings on titanium using a continuous sol-gel process

International Nuclear Information System (INIS)

Dixon, B.G.; Walsh, M.A. III; Phillips, P.G.; Morris, R.S.

1995-01-01

Thin amorphous films of ceramic capacitor materials were successfully deposited using sol-gel chemistry onto titanium wire using a continuous, computer controlled process. By repeatedly depositing and calcining very thin layers of material, smooth and even coats can be produced. Surface analyses revealed the layered nature of these thin coats, as well as the amorphous nature of the ceramic. The electrical properties of the better coatings, all composed of niobium, bismuth, zinc oxides, were then evaluated. copyright 1995 Materials Research Society

High-energy power capacitors, their applied technology and the trends

International Nuclear Information System (INIS)

2012-01-01

High-voltage and high-energy-density power capacitors called high-power ones such as film or electrolytic capacitors, have been used in large quantities for the pulse power technology such as an impulse current or voltage generator and a laser power supply, and for the power electronics one with progress of the power semiconductor device and the inverter technology. Recently, electric double layer capacitors (EDLC) with remarkable technical progress have been applied for the equipments of electric power and industrial field for the purpose of energy saving or electric power quality improvement, which have come to link to the electric power system. Thus, using a lot of high-power capacitors near our life would require to know the structure, the principle and the characteristic of capacitors, and also to consider suitable directions for use, maintenance and safety and so on, when carrying out a system and a facility design. In the technical report, while describing the dielectric and the feature of some high-power capacitors, and introducing the application examples to the laser-fusion power supply and some systems with EDLC, the trend of standardization of EDLC and the directivity of the examination about installation and maintenance of the applied equipments are described. (author)

A Robust DC-Split-Capacitor Power Decoupling Scheme for Single-Phase Converter

DEFF Research Database (Denmark)

Yao, Wenli; Loh, Poh Chiang; Tang, Yi

2017-01-01

Instead of bulky electrolytic capacitors, active power decoupling circuit can be introduced to a single-phase converter for diverting second harmonic ripple away from its dc source or load. One possible circuit consists of a half-bridge and two capacitors in series for forming a dc-split capacitor......, instead of the usual single dc-link capacitor bank. Methods for regulating this power decoupler have earlier been developed, but almost always with equal capacitances assumed for forming the dc-split capacitor, even though it is not realistic in practice. The assumption should, hence, be evaluated more...... thoroughly, especially when it is shown in the paper that even a slight mismatch can render the power decoupling scheme ineffective and the IEEE 1547 standard to be breached. A more robust compensation scheme is, thus, needed for the dc-split capacitor circuit, as proposed and tested experimentally...

Instantaneous thermal modeling of the DC-link capacitor in PhotoVoltaic systems

DEFF Research Database (Denmark)

Yang, Yongheng; Ma, Ke; Wang, Huai

2015-01-01

, instantaneous thermal modeling approaches considering mission profiles for the DC-link capacitor in single-phase PV systems are explored in this paper. These thermal modelling approaches are based on: a) fast Fourier transform, b) look-up tables, and c) ripple current reconstruction. Moreover, the thermal...... grid-connected PV system have been adopted to demonstrate a look-up table based modelling approach, where real-field daily ambient conditions are considered....... modelling approaches for the DC-link capacitors take into account the instantaneous thermal characteristics, which are more challenging to the capacitor reliability during operation. Such instantaneous thermal modeling approaches enable a translation of instantaneous capacitor power losses to capacitor...

The Two-Capacitor Problem Revisited: A Mechanical Harmonic Oscillator Model Approach

Science.gov (United States)

Lee, Keeyung

2009-01-01

The well-known two-capacitor problem, in which exactly half the stored energy disappears when a charged capacitor is connected to an identical capacitor, is discussed based on the mechanical harmonic oscillator model approach. In the mechanical harmonic oscillator model, it is shown first that "exactly half" the work done by a constant applied…

Characterization system for research on energy storage capacitors

Science.gov (United States)

Noriega, J. R.; Iyore, O. D.; Budime, C.; Gnade, B.; Vasselli, J.

2013-05-01

In this work a characterization system for high energy-density capacitors is described and demonstrated. Capacitors are being designed using thin-film technology in an attempt to achieve higher energy-density levels by operating the devices at a high voltage. These devices are fabricated from layers of 100 nm aluminum and a layer of polyvinylidene fluoride-hexafluoropropylene on a polyethylene naphthalate plastic substrate. The devices have been designed to store electrical charge at up to 200 V. Characterizations of these devices focus on the measurement of capacitance vs bias voltage and temperature, equivalent series resistance, and charge/discharge cycles. For the purpose of the characterization of these capacitors, an electronic charge/discharge interface was designed and tested.

Two-layer radio frequency MEMS fractal capacitors in PolyMUMPS for S-band applications

KAUST Repository

Elshurafa, Amro M.

2012-07-23

In this Letter, the authors fabricate for the first time MEMS fractal capacitors possessing two layers and compare their performance characteristics with the conventional parallel-plate capacitor and previously reported state-of-the-art single-layer MEMS fractal capacitors. Explicitly, a capacitor with a woven structure and another with an interleaved configuration were fabricated in the standard PolyMUMPS surface micromachining process and tested at S-band frequencies. The self-resonant frequencies of the fabricated capacitors were close to 10GHz, which is better than that of the parallel-plate capacitor, which measured only 5.5GHz. Further, the presented capacitors provided a higher capacitance when compared with the state-of-the-art-reported MEMS fractal capacitors created using a single layer at the expense of a lower quality factor. © 2012 The Institution of Engineering and Technology.

A Reliability Model for Ni-BaTiO3-Based (BME) Ceramic Capacitors

Science.gov (United States)

Liu, Donhang

2014-01-01

The evaluation of multilayer ceramic capacitors (MLCCs) with base-metal electrodes (BMEs) for potential NASA space project applications requires an in-depth understanding of their reliability. The reliability of an MLCC is defined as the ability of the dielectric material to retain its insulating properties under stated environmental and operational conditions for a specified period of time t. In this presentation, a general mathematic expression of a reliability model for a BME MLCC is developed and discussed. The reliability model consists of three parts: (1) a statistical distribution that describes the individual variation of properties in a test group of samples (Weibull, log normal, normal, etc.), (2) an acceleration function that describes how a capacitors reliability responds to external stresses such as applied voltage and temperature (All units in the test group should follow the same acceleration function if they share the same failure mode, independent of individual units), and (3) the effect and contribution of the structural and constructional characteristics of a multilayer capacitor device, such as the number of dielectric layers N, dielectric thickness d, average grain size r, and capacitor chip size S. In general, a two-parameter Weibull statistical distribution model is used in the description of a BME capacitors reliability as a function of time. The acceleration function that relates a capacitors reliability to external stresses is dependent on the failure mode. Two failure modes have been identified in BME MLCCs: catastrophic and slow degradation. A catastrophic failure is characterized by a time-accelerating increase in leakage current that is mainly due to existing processing defects (voids, cracks, delamination, etc.), or the extrinsic defects. A slow degradation failure is characterized by a near-linear increase in leakage current against the stress time; this is caused by the electromigration of oxygen vacancies (intrinsic defects). The

Highly Accurate Derivatives for LCL-Filtered Grid Converter with Capacitor Voltage Active Damping

DEFF Research Database (Denmark)

Xin, Zhen; Loh, Poh Chiang; Wang, Xiongfei

2016-01-01

The middle capacitor voltage of an LCL-filter, if fed back for synchronization, can be used for active damping. An extra sensor for measuring the capacitor current is then avoided. Relating the capacitor voltage to existing popular damping techniques designed with capacitor current feedback would...... are then proposed, based on either second-order or non-ideal generalized integrator. Performances of these derivatives have been found to match the ideal “s” function closely. Active damping based on capacitor voltage feedback can therefore be realized accurately. Experimental results presented have verified...

Harmonic Resonance in Power Transmission Systems due to the Addition of Shunt Capacitors

Science.gov (United States)

Patil, Hardik U.

Shunt capacitors are often added in transmission networks at suitable locations to improve the voltage profile. In this thesis, the transmission system in Arizona is considered as a test bed. Many shunt capacitors already exist in the Arizona transmission system and more are planned to be added. Addition of these shunt capacitors may create resonance conditions in response to harmonic voltages and currents. Such resonance, if it occurs, may create problematic issues in the system. It is main objective of this thesis to identify potential problematic effects that could occur after placing new shunt capacitors at selected buses in the Arizona network. Part of the objective is to create a systematic plan for avoidance of resonance issues. For this study, a method of capacitance scan is proposed. The bus admittance matrix is used as a model of the networked transmission system. The calculations on the admittance matrix were done using Matlab. The test bed is the actual transmission system in Arizona; however, for proprietary reasons, bus names are masked in the thesis copy intended for the public domain. The admittance matrix was obtained from data using the PowerWorld Simulator after equivalencing the 2016 summer peak load (planning case). The full Western Electricity Coordinating Council (WECC) system data were used. The equivalencing procedure retains only the Arizona portion of the WECC. The capacitor scan results for single capacitor placement and multiple capacitor placement cases are presented. Problematic cases are identified in the form of 'forbidden response. The harmonic voltage impact of known sources of harmonics, mainly large scale HVDC sources, is also presented. Specific key results for the study indicated include: (1) The forbidden zones obtained as per the IEEE 519 standard indicates the bus 10 to be the most problematic bus. (2) The forbidden zones also indicate that switching values for the switched shunt capacitor (if used) at bus 3 should be

Electrochemical properties of novel ionic liquids for electric double layer capacitor applications

International Nuclear Information System (INIS)

Sato, Takaya; Masuda, Gen; Takagi, Kentaro

2004-01-01

An aliphatic quaternary ammonium salt which has a methoxyethyl group on the nitrogen atom formed an ionic liquid (room temperature molten salt) when combined with the tetrafluoroborate (BF 4 - ) and bis(trifluoromethylsulfonyl)imide [TFSI; (CF 3 SO 2 ) 2 N - ] anions. The limiting oxidation and reduction potentials, specific conductivity, and some other physicochemical properties of the novel ionic liquids, N,N-diethyl-N-methyl-N-(2-methoxyethyl)ammonium tetrafluoroborate (DEME-BF 4 ) and DEME-TFSI have been evaluated and compared with those of 1-ethyl-3-methylimidazolium tetrafluoroborate. DEME-BF 4 is a practically useful ionic liquid for electrochemical capacitors as it has a quite wide potential window (6.0 V) and high ionic conductivity (4.8 mS cm -1 at 25 deg. C). We prepared an electric double layer capacitor (EDLC) composed of a pair of activated carbon electrodes and DEME-BF 4 as the electrolyte. This EDLC (working voltage ∼2.5 V) has both, a higher capacity above room temperature and a better charge-discharge cycle durability at 100 deg. C when compared to a conventional EDLC using an organic liquid electrolyte such as a tetraethylammonium tetrafluoroborate in propylene carbonate

DC-to-DC converter comprising a reconfigurable capacitor unit

NARCIS (Netherlands)

2008-01-01

The present invention relates to a configurable trench multi-capacitor device comprising a trench in a semiconductor substrate. The trench has a lateral extension exceeding 10 micrometer and a trench filling includes a number of at least four electrically conductive capacitor-electrode layers. A

DC-to-DC converter comprising a reconfigurable capacitor unit

NARCIS (Netherlands)

Klootwijk, J.H.; Bergveld, H.J.; Roozeboom, F.; Reefman, D.; Ruigrok, J.

2013-01-01

The present invention relates to a configurable trench multi-capacitor device comprising a trench in a semiconductor substrate. The trench has a lateral extension exceeding 10 micrometer and a trench filling includes a number of at least four electrically conductive capacitor-electrode layers. A

Floating body cell a novel capacitor-less DRAM cell

CERN Document Server

Ohsawa, Takashi

2011-01-01

DRAM together with NAND Flash is driving semiconductor technologies with wide spectrum of usage ranging from PC, mobile phone and digital home appliances to solid-state disk (SSD). However, the DRAM cell which consists of a data storage capacitor (1C) and a switching transistor (1T) is facing serious difficulty in shrinking the size of the capacitor whose capacitance needs to be kept almost constant (20~30fF) throughout generations. The availability of a new DRAM cell which does not rely on an explicit capacitor for storing its data is more than ever awaited for further increasing the bit dens

Effects of the Particle Size and the Solvent in Printing Inks on the Capacitance of Printed Parallel-Plate Capacitors

Directory of Open Access Journals (Sweden)

Sungsik Park

2016-02-01

Full Text Available Parallel-plate capacitors were fabricated using a printed multi-layer structure in order to determine the effects of particle size and solvent on the capacitance. The conductive-dielectric-conductive layers were sequentially spun using commercial inks and by intermediate drying with the aid of a masking polymeric layer. Both optical and scanning electron microscopy were used to characterize the morphology of the printed layers. The measured capacitance was larger than the theoretically calculated value when ink with small-sized particles was used as the top plate. Furthermore, the use of a solvent whose polarity was similar to that of the underlying dielectric layer enhanced the penetration and resulted in an increase in capacitance. The functional resistance-capacitance low-pass filter was implemented using printed resistors and capacitors, a process that may be scalable in the future.

Carbon-based fibrous EDLC capacitors and supercapacitors

OpenAIRE

Lekakou, C; Moudam, O; Markoulidis, F; Andrews, T; Watts, JF; Reed, GT

2011-01-01

This paper investigates electrochemical double-layer capacitors (EDLCs) including two alternative types of carbon-based fibrous electrodes, a carbon fibre woven fabric (CWF) and a multiwall carbon nanotube (CNT) electrode, as well as hybrid CWF-CNT electrodes. Two types of separator membranes were also considered. An organic gel electrolyte PEO-LiCIO4-EC-THF was used to maintain a high working voltage. The capacitor cells were tested in cyclic voltammetry, charge-discharge, and impedance test...

Phase shift PWM with double two-switch bridge for high power capacitor charging

International Nuclear Information System (INIS)

Karandikar, U.S.; Singh, Yashpal; Thakurta, A.C.

2013-01-01

Pulse power supply systems working at higher voltage and high repetition rate demands for higher power from capacitor chargers. Capacitor charging requirement become more challenging in such cases. In pulse power circuits, energy storage capacitor should be charged to its desired voltage before the next switching occurs. It is discharged within a small time, delivering large pulse power. A capacitor charger has to work with wide load variation repeatedly. Many schemes are used for this purpose. The proposed scheme aims at reducing stresses on switches by reducing peak current and their evils. A high voltage power supply is designed for capacitor charging. The proposed scheme is based on a Phase-Shifted PWM without using any extra component to achieve soft switching. Indirect constant average current capacitor charging is achieved with a simple control scheme. A double two-switch bridge is proposed to enhance reliability. Power supply has been developed to charge a capacitor of 50 μF to 2.5 kV at 25 Hz. (author)

Downhole transmission system comprising a coaxial capacitor

Science.gov (United States)

Hall, David R [Provo, UT; Pixton, David S [Lehi, UT; Johnson, Monte L [Orem, UT; Bartholomew, David B [Springville, UT; Hall, Jr., H. Tracy; Rawle, Michael [Springville, UT

2011-05-24

A transmission system in a downhole component comprises a plurality of data transmission elements. A coaxial cable having an inner conductor and an outer conductor is disposed within a passage in the downhole component such that at least one capacitor is disposed in the passage and having a first terminal coupled to the inner conductor and a second terminal coupled to the outer conductor. Preferably the transmission element comprises an electrically conducting coil. Preferably, within the passage a connector is adapted to electrically connect the inner conductor of the coaxial cable and the lead wire. The coaxial capacitor may be disposed between and in electrically communication with the connector and the passage. In another embodiment a connector is adapted to electrical connect a first and a second portion of the inner conductor of the coaxial cable and a coaxial capacitor is in electrical communication with the connector and the passage.

Powder based superdielectric materials for novel Capacitor design

Science.gov (United States)

2017-06-01

found in cars, smartphones and other devices have adequate energy densities but lack optimal electric power delivery performance [4]. Stated differently... physical damage to the electrodes [5]. Conversely, capacitors store energy electrostatically by releasing excited state electrons collected on a...overview of capacitor theory is presented as a means of highlighting key physics principles applicable to this research. First, the concept of

Impedance Characteristics Modeling of a Two-Terminal Active Capacitor

DEFF Research Database (Denmark)

Wang, Haoran; Wang, Huai; Lu, Minghui

2017-01-01

to overcome the above issues. In this paper, the modeling of the active capacitor is investigated and a voltage feed-forward compensation scheme is proposed for overshoot reduction. Therefore, the impedance, equivalent capacitance, ESR, and ESL, of the active capacitor can be specified. A case study based...

Hysteresis in Lanthanide Aluminum Oxides Observed by Fast Pulse CV Measurement

Directory of Open Access Journals (Sweden)

Chun Zhao

2014-10-01

Full Text Available Oxide materials with large dielectric constants (so-called high-k dielectrics have attracted much attention due to their potential use as gate dielectrics in Metal Oxide Semiconductor Field Effect Transistors (MOSFETs. A novel characterization (pulse capacitance-voltage method was proposed in detail. The pulse capacitance-voltage technique was employed to characterize oxide traps of high-k dielectrics based on the Metal Oxide Semiconductor (MOS capacitor structure. The variation of flat-band voltages of the MOS structure was observed and discussed accordingly. Some interesting trapping/detrapping results related to the lanthanide aluminum oxide traps were identified for possible application in Flash memory technology. After understanding the trapping/detrapping mechanism of the high-k oxides, a solid foundation was prepared for further exploration into charge-trapping non-volatile memory in the future.

Series-, Parallel-, and Inter-Connection of Solid-State Arbitrary Fractional-Order Capacitors: Theoretical Study and Experimental Verification

KAUST Repository

Kartci, Aslihan

2018-02-26

In the paper, general analytical formulas are introduced for the determination of equivalent impedance, magnitude, and phase, i.e. order, for n arbitrary fractional-order capacitors (FoCs) connected in series, parallel, and their interconnection. The approach presented helps to evaluate these relevant quantities in the fractional domain since the order of each element has a significant effect on the impedance of each FoC and their equivalent capacitance cannot be considered. Three types of solid-state fractional-order passive capacitors of different orders, using ferroelectric polymer and reduced Graphene Oxide-percolated P(VDF-TrFE-CFE) composite structures, are fabricated and characterized. Using an impedance analyzer, the behavior of the devices was found to be stable in the frequency range 0.2MHz–20MHz, with a phase angle deviation of ±4 degrees. Multiple numerical and experimental case studies are given, in particular for two and three connected FoCs. The fundamental issues of the measurement units of the FoCs connected in series and parallel are derived. A MATLAB open access source code is given in Appendix sec:append for easy calculation of the equivalent FoC magnitude and phase. The experimental results are in good agreement with the theoretical assumptions.

Barium titanate nanocomposite capacitor FY09 year end report.

Energy Technology Data Exchange (ETDEWEB)

Stevens, Tyler E.; DiAntonio, Christopher Brian; Yang, Pin; Chavez, Tom P.; Winter, Michael R.; Monson, Todd C.; Roesler, Alexander William; Fellows, Benjamin D.

2009-11-01

This late start RTBF project started the development of barium titanate (BTO)/glass nanocomposite capacitors for future and emerging energy storage applications. The long term goal of this work is to decrease the size, weight, and cost of ceramic capacitors while increasing their reliability. Ceramic-based nanocomposites have the potential to yield materials with enhanced permittivity, breakdown strength (BDS), and reduced strain, which can increase the energy density of capacitors and increase their shot life. Composites of BTO in glass will limit grain growth during device fabrication (preserving nanoparticle grain size and enhanced properties), resulting in devices with improved density, permittivity, BDS, and shot life. BTO will eliminate the issues associated with Pb toxicity and volatility as well as the variation in energy storage vs. temperature of PZT based devices. During the last six months of FY09 this work focused on developing syntheses for BTO nanoparticles and firing profiles for sintering BTO/glass composite capacitors.

Experimental verification of on-chip CMOS fractional-order capacitor emulators

KAUST Repository

Tsirimokou, G.

2016-06-13

The experimental results from a fabricated integrated circuit of fractional-order capacitor emulators are reported. The chip contains emulators of capacitors of orders 0.3, 0.4, 0.5, 0.6 and 0.7 with nano-Farad pseudo-capacitances that can be adjusted through a bias current. Two off-chip capacitors are used to set the bandwidth of each emulator independently. The chip was designed in Austria microsystems (AMS) 0.35μ CMOS. © 2016 The Institution of Engineering and Technology.

Experimental verification of on-chip CMOS fractional-order capacitor emulators

KAUST Repository

Tsirimokou, G.; Psychalinos, C.; Salama, Khaled N.; Elwakil, A.S.

2016-01-01

The experimental results from a fabricated integrated circuit of fractional-order capacitor emulators are reported. The chip contains emulators of capacitors of orders 0.3, 0.4, 0.5, 0.6 and 0.7 with nano-Farad pseudo-capacitances that can be adjusted through a bias current. Two off-chip capacitors are used to set the bandwidth of each emulator independently. The chip was designed in Austria microsystems (AMS) 0.35μ CMOS. © 2016 The Institution of Engineering and Technology.

Capacitor discharge process for welding braided cable

Science.gov (United States)

Wilson, Rick D.

1995-01-01

A capacitor discharge process for welding a braided cable formed from a plurality of individual cable strands to a solid metallic electrically conductive member comprises the steps of: (a) preparing the electrically conductive member for welding by bevelling one of its end portions while leaving an ignition projection extending outwardly from the apex of the bevel; (b) clamping the electrically conductive member in a cathode fixture; (c) connecting the electrically conductive member clamped in the cathode fixture to a capacitor bank capable of being charged to a preselected voltage value; (d) preparing the braided cable for welding by wrapping one of its end portions with a metallic sheet to form a retaining ring operable to maintain the individual strands of the braided cable in fixed position within the retaining ring; (e) clamping the braided cable and the retaining ring as a unit in an anode fixture so that the wrapped end portion of the braided cable faces the ignition projection of the electrically conductive member; and (f) moving the cathode fixture towards the anode fixture until the ignition projection of the electrically conductive member contacts the end portion of the braided cable thereby allowing the capacitor bank to discharge through the electrically conductive member and through the braided cable and causing the electrically conductive member to be welded to the braided cable via capacitor discharge action.

Studying DAC capacitor-array degradation in charge-redistribution SAR ADCs

NARCIS (Netherlands)

Khan, M.A.; Kerkhoff, Hans G.

2014-01-01

In this paper, system-level behavioural models are used to simulate the aging-related degradation effects in the DAC capacitor array of a charge-redistribution successive approximation register (SAR) ADC because of the large calculation time of transistor-level aging simulators. A

Graphene electric double layer capacitor with ultra-high-power performance

International Nuclear Information System (INIS)

Miller, John R.; Outlaw, R.A.; Holloway, B.C.

2011-01-01

We have demonstrated, for the first time, efficient 120 Hz filtering by an electric double layer capacitor (EDLC). The key to this ultra-high-power performance is electrodes made from vertically oriented graphene nanosheets grown directly on metal current collectors. This design minimized both electronic and ionic resistance and produced capacitors having RC time-constants of less than 200 μs. Significantly, graphene nanosheets have a preponderance of exposed edge planes that greatly increase stored charge over designs relying on basal plane surfaces. Collectively these factors make vertically oriented graphene nanosheet electrodes ideally suited for producing high-frequency EDLCs. Capacitors constructed with these electrodes are predicted to be significantly smaller than aluminum electrolyte capacitors that they could functionally replace plus be manufactured using standard semiconductor process equipment, creating interesting commercial opportunities.

Multi-step capacitor discharges as an RF generator

International Nuclear Information System (INIS)

Hotta, Eiki; Yamamoto, Shunji; Ishii, Shozo; Hayashi, Izumi

1979-01-01

A variety of methods have been developed for large output radio frequency (RF) generators to heat and stabilize high temperature plasma. As the generators for this purpose, capacitor discharge, cable discharge, and oscillation with electronic tubes are considered. Here, a new RF generator is reported, which utilizes capacitor discharge to extract heavy current, and solves the difficulty of short duration by employing multistep discharges. The authors solved the problem of frequency decrease in capacitor discharge by cutting off the unnecessary capacitors reasonably from the load circuit, using the additional circuit for shunting current and vacuum gap switches. The vacuum gap switches and the trigger system are described together with the RF generator manufactured. The generator was fabricated to be rather compact for its large output and simple in circuitry as compared with conventional oscillator systems. The shortcomings are frequency variation and the improper phase of switching the next step in to cause instability, when the load change occurs. It would be difficult to operate the generator in a RF range of more than about 10 MHz due to jitter of the vacuum gap switches and others. (Wakatsuki, Y.)

All-printed capacitors with continuous solution dispensing technology

Science.gov (United States)

Ge, Yang; Plötner, Matthias; Berndt, Andreas; Kumar, Amit; Voit, Brigitte; Pospiech, Doris; Fischer, Wolf-Joachim

2017-09-01

Printed electronics have been introduced into the commercial markets in recent years. Various printing technologies have emerged aiming to process printed electronic devices with low cost, environmental friendliness, and compatibility with large areas and flexible substrates. The aim of this study is to propose a continuous solution dispensing technology for processing all-printed thin-film capacitors on glass substrates using a leading-edge printing instrument. Among all printing technologies, this study provides concrete proof of the following outstanding advantages of this technology: high tolerance to inks, high throughput, low cost, and precise pattern transfers. Ag nanoparticle ink based on glycol ethers was used to print the electrodes. To obtain dielectric ink, a copolymer powder of poly(methyl methacrylate-co-benzoylphenyl methacrylate) containing crosslinkable side groups was dissolved in anisole. Various layouts were designed to support multiple electronic applications. Scanning electron microscopy and atomic force microscopy were used to investigate the all-printed capacitor layers formed using the proposed process. Additionally, the printed capacitors were electrically characterized under direct current and alternating current. The measured electrical properties of the printed capacitors were consistent with the theoretical results.

Graphene spin capacitor for magnetic field sensing

OpenAIRE

Semenov, Y. G.; Zavada, J. M.; Kim, K. W.

2010-01-01

An analysis of a novel magnetic field sensor based on a graphene spin capacitor is presented. The proposed device consists of graphene nanoribbons on top of an insulator material connected to a ferromagnetic source/drain. The time evolution of spin polarized electrons injected into the capacitor can be used for an accurate determination at room temperature of external magnetic fields. Assuming a spin relaxation time of 100 ns, magnetic fields on the order of $\\sim 10$ mOe may be detected at r...

Effects of the LiFePO4 content and the preparation method on the properties of (LiFePO4+AC/Li4Ti5O12 hybrid battery–capacitors

Directory of Open Access Journals (Sweden)

XUE BU HU

2010-09-01

Full Text Available Two composite cathode materials containing LiFePO4 and activated carbon (AC were synthesized by an in-situ method and a direct mixing technique, which are abbreviated as LAC and DMLAC, respectively. Hybrid battery–capacitors LAC/Li4Ti5O12 and DMLAC/Li4Ti5O12 were then assembled. The effects of the content of LiFePO4 and the preparation method on the cyclic voltammograms, the rate of charge–discharge and the cycle performance of the hybrid battery–capacitors were investigated. The results showed the overall electrochemical performance of the hybrid battery–capacitors was the best when the content of LiFePO4 in the composite cathode materials was in the range from 11.8 to 28.5 wt. %, while the preparation method had almost no impact on the electrochemical performance of the composite cathodes and hybrid battery–capacitors. Moreover, the hybrid battery–capacitor devices had a good cycle life performance at high rates. After 1000 cycles, the capacity loss of the DMLAC/Li4Ti5O12 hybrid battery–capacitor device at 4C was no more than 4.8 %. Moreover, the capacity loss would be no more than 9.6 % after 2000 cycles at 8C.

Capacitor ageing in electronic devices

Directory of Open Access Journals (Sweden)

Richard B. N. Vital

2015-10-01

Full Text Available The moment when an electronic component doesn’t work like requirements, previously established is a task that need to be considered since began of a system design. However, the use of different technologies, operating under several environmental conditions, makes a component choice a complex step in system design. This paper analyzes the effects that ageing phenomenon of capacitors may introduce in electronic devices operation. For this reason, reliability concepts, processes and mechanism of degradation are presented. Additionally, some mathematical models are presented to assist maintenance activities or component replacement. The presented approach compares the operability of intact and aged components.

Energize Electrochemical Double Layer Capacitor by Introducing an Ambipolar Organic Redox Radical in Electrolyte.

Science.gov (United States)

Wang, Yonggang; Hu, Lintong; Zhang, Yue; Shi, Chao; Guo, Kai; Zhai, Tianyou; Li, Huiqiao

2018-05-24

Carbon based electrochemical double layer capacitors (EDLCs) generally exhibit high power and long life, but low energy density/capacitance. Pore/morphology optimization and pseudocapacitive materials modification of carbon materials have been used to improve electrode capacitance, but leading to the consumption of tap density, conductivity and stability. Introducing soluble redox mediators into electrolyte is a promising alternative to improve the capacitance of electrode. However, it is difficult to find one redox mediator that can provide additional capacitance for both positive and negative electrodes simultaneously. Here, an ambipolar organic radical, 2, 2, 6, 6-tetramethylpiperidinyloxyl (TEMPO) is first introduced to the electrolyte, which can substantially contribute additional pseudocapacitance by oxidation at the positive electrode and reduction at the negative electrode simultaneously. The EDLC with TEMPO mediator delivers an energy density as high as 51 Wh kg-1, 2.4 times of the capacitor without TEMPO, and a long cycle stability over 4000 cycles. The achieved results potentially point a new way to improve the energy density of EDLCs. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Device for detecting imminent failure of high-dielectric stress capacitors. [Patent application

Science.gov (United States)

McDuff, G.G.

1980-11-05

A device is described for detecting imminent failure of a high-dielectric stress capacitor utilizing circuitry for detecting pulse width variations and pulse magnitude variations. Inexpensive microprocessor circuitry is utilized to make numerical calculations of digital data supplied by detection circuitry for comparison of pulse width data and magnitude data to determine if preselected ranges have been exceeded, thereby indicating imminent failure of a capacitor. Detection circuitry may be incorporated in transmission lines, pulse power circuitry, including laser pulse circuitry or any circuitry where capacitors or capacitor banks are utilized.

Thyristor-controlled reactor improves series capacitor applications

Energy Technology Data Exchange (ETDEWEB)

Renz, K.W.; Thumm, G.; Weiss, S. [Siemens AG, Erlangen (Germany)

1995-12-31

Environmental considerations make it more and more difficult to plan and erect new transmission lines. FACTS (Flexible AC Transmission Systems) technology can provide devices to improve the utility of AC transmission lines. The innovative combination of conventional fixed series capacitors and thyristor controlled reactors as a new FACTS device was introduced into a transmission system in 1992. This Advanced Series Compensation (ASC) system provides many advantages not available with conventional fixed series capacitor installations such as flexible direct and continuous control of the compensation level, direct and smooth power flow control and improved capacitor bank protection. This new technology offers enhanced system flexibility by control of transmission line overload conditions, reduction in fault currents, sub-synchronous resonance (SSR) mitigation and network power oscillation damping. The world-first three-phase installation at Kayenta Substation, USA, demonstrates that modern FACTS devices using SVC thyristor valve technology can be designed and operated successfully. 6 refs, 7 figs

Nanostructured Anodic Multilayer Dielectric Stacked Metal-Insulator-Metal Capacitors.

Science.gov (United States)

Karthik, R; Kannadassan, D; Baghini, Maryam Shojaei; Mallick, P S

2015-12-01

This paper presents the fabrication of Al2O3/TiO2/Al2O3 metal-insulator-metal (MIM) capacitor using anodization technique. High capacitance density of > 3.5 fF/μm2, low quadratic voltage coefficient of capacitance of dielectric stack required for high performance MIM capacitor.

A high-performance trench capacitor integrated in a passive integration technology

International Nuclear Information System (INIS)

Geiselbrechtinger, Angelika; Büyüktas, Kevni; Allers, Karl-Heinz; Hartung, Wolfgang

2009-01-01

The requirements for the electrical characteristics of passive on-chip devices become more and more important. The electrical performance of RF circuits is predominantly restricted by the passives. New technologies and new device concepts are necessary to meet the demands. In this work, a trench capacitor developed for RF applications is presented for the first time. This so-called SilCap (silicon capacitor) device features very high capacitance density, extreme low-voltage dependence, excellent temperature stability, good RF performance and a high breakthrough voltage. First, the device function and the technological concept are introduced. The concept is realized without implementing cost-intensive high-k materials. This trench capacitor is integrated in the front end of line of a passive integration technology. The achieved specific capacitance density is compared to a standard planar capacitor. Performance of the SilCap in terms of quality factor and breakthrough voltage is shown. Finally, reliability data of this trench capacitor are presented with special focus on extrinsic and dielectric lifetime

Applying low-energy multipulse excimer laser annealing to improve charge retention of Au nanocrystals embedded MOS capacitors

International Nuclear Information System (INIS)

Shen, Kuan-Yuan; Chen, Hung-Ming; Liao, Ting-Wei; Kuan, Chieh-Hsiung

2015-01-01

The low-energy multipulse excimer laser annealing (LEM-ELA) is proposed to anneal the nanostructure of nanocrystal (NC) embedded in a SiO 2 thin film without causing atomic diffusion and damaging the NCs, since the LEM-ELA combining the advantages of laser annealing and UV curing features rapid heating and increasing oxide network connectivity. A Fourier transform infrared spectroscopy (FTIR) characterization of SiO 2 thin films annealed using LEM-ELA indicated that the quality was improved through the removal of water-related impurities and the reconstruction of the network Si–O–Si bonds. Then, LEM-ELA was applied to a SiO 2 thin film embedded with Au NCs, which were fabricated as MOS capacitors. The charge retention was greatly improved and the percentage of retained charges was about 10% after 3  ×  10 8  s. To investigate and differentiate the effects of LEM-ELA on charges stored in both oxide traps and in the Au NCs, a double-mechanism charge relaxation analysis was performed. The results indicated that the oxide traps were removed and the confinement ability of Au NCs was enhanced. The separated memory windows contributed from the charges in Au NCs and those in oxide traps were obtained and further confirmed that the LEM-ELA removed oxide traps without damaging the Au NCs. (paper)

Capacitor-less memory cell fabricated on nano-scale strained Si on a relaxed SiGe layer-on-insulator

International Nuclear Information System (INIS)

Kim, Tae-Hyun; Park, Jea-Gun

2013-01-01

We investigated the combined effect of the strained Si channel and hole confinement on the memory margin enhancement for a capacitor-less memory cell fabricated on nano-scale strained Si on a relaxed SiGe layer-on-insulator (ε-Si SGOI). The memory margin for the ε-Si SGOI capacitor-less memory cell was higher than that of the memory cell fabricated on an unstrained Si-on-insulator (SOI) and increased with increasing Ge concentration of the relaxed SiGe layer; i.e. the memory margin for the ε-Si SGOI capacitor-less memory cell (138.6 µA) at a 32 at% Ge concentration was 3.3 times higher than the SOI capacitor-less memory cell (43 µA). (paper)

Ionizing radiation effects on silicon test structures

International Nuclear Information System (INIS)

Kraner, H.W.; Beuttenmuller, R.; Chen, W.; Kierstead, J.A.; Li, Z.; Zhang, Y.; Dou, L.; Fretwurst, E.; Lindstroem, G.

1993-12-01

The effects of 60 Co gamma irradiation on MOSCAPS and special junction diode detectors have been studied. The capacitors were used to ellicit the charge accumulation and anneal in two types of thermally grown oxides representative of those used in routine detector processing. Ion implanted, oxide passivated junction detectors having 0.25 and 1 cm 2 areas and perimeter to area ratios of 1 (a square), 2 and 5 were designed and constructed to amplify the ionizing effects expected to largely affect junction edges through changes in fixed oxide charges. Detectors were exposed to over 4 Mrad and showed clear increases in leakage current in proportion to the junction edge length. Annealing schedules were determined to provide a continuous response to incremental irradiations and subsequent room temperature anneals of leakage current. Besides an increase in gate threshold, little effect on the C(V) response was found. PISCES simulation of the edge fields using different fixed oxide charge revealed regions of very high lateral fields near the junction edges for fixed charges in the 2 x 10 12 /cm 2 range expected from the capacitor studies which could be responsible for the observed leakage currents

Formation of oxide-trapped charges in 6H-SiC MOS structures

Energy Technology Data Exchange (ETDEWEB)

Yoshikawa, Masahito; Ohshima, Takeshi; Itoh, Hisayoshi; Nashiyama, Isamu [Japan Atomic Energy Research Inst., Takasaki, Gunma (Japan). Takasaki Radiation Chemistry Research Establishment; Okumura, Hajime; Yoshida, Sadafumi

1997-03-01

The silicon and the carbon faces of hexagonal silicon carbide (6H-SiC) substrates were oxidized pyrogenically at 1100degC, and the metal-oxide-semiconductor structures were formed on these faces. The MOS capacitors developed using the silicon and the carbon faces were irradiated with {sup 60}Co gamma-rays under argon atmosphere at room temperature. The bias voltages with the different polarity were applied to the gate electrode during irradiation to examine the formation mechanisms of the trapped charges in the oxides of these MOS capacitors. The amount of the trapped charges in the oxide were obtained from capacitance pulse voltage characteristics. The generation of the trapped charges are affects with not only the absorbed dose but also the bias polarity applied to the gate electrodes during irradiation. The formation mechanisms of the trapped charges in the oxides were estimated in conjunction with the surface orientation of 6H-SiC substrates. (author)

Capacitor-based detection of nuclear magnetization: nuclear quadrupole resonance of surfaces.

Science.gov (United States)

Gregorovič, Alan; Apih, Tomaž; Kvasić, Ivan; Lužnik, Janko; Pirnat, Janez; Trontelj, Zvonko; Strle, Drago; Muševič, Igor

2011-03-01

We demonstrate excitation and detection of nuclear magnetization in a nuclear quadrupole resonance (NQR) experiment with a parallel plate capacitor, where the sample is located between the two capacitor plates and not in a coil as usually. While the sensitivity of this capacitor-based detection is found lower compared to an optimal coil-based detection of the same amount of sample, it becomes comparable in the case of very thin samples and even advantageous in the proximity of conducting bodies. This capacitor-based setup may find its application in acquisition of NQR signals from the surface layers on conducting bodies or in a portable tightly integrated nuclear magnetic resonance sensor. Copyright © 2010 Elsevier Inc. All rights reserved.

Multiple Interfacial Fe3O4@BaTiO3/P(VDF-HFP) Core-Shell-Matrix Films with Internal Barrier Layer Capacitor (IBLC) Effects and High Energy Storage Density.

Science.gov (United States)

Zhou, Ling; Fu, Qiuyun; Xue, Fei; Tang, Xiahui; Zhou, Dongxiang; Tian, Yahui; Wang, Geng; Wang, Chaohong; Gou, Haibo; Xu, Lei

2017-11-22

Flexible nanocomposites composed of high dielectric constant fillers and polymer matrix have shown great potential for electrostatic capacitors and energy storage applications. To obtain the composited material with high dielectric constant and high breakdown strength, multi-interfacial composited particles, which composed of conductive cores and insulating shells and possessed the internal barrier layer capacitor (IBLC) effect, were adopted as fillers. Thus, Fe 3 O 4 @BaTiO 3 core-shell particles were prepared and loaded into the poly(vinylidene fluoride-co-hexafluoropropylene) (P(VDF-HFP)) polymer matrix. As the mass fraction of core-shell fillers increased from 2.5 wt % to 30 wt %, the dielectric constant of the films increased, while the loss tangent remained at a low level (capacitor model was also adopted to interpret the efficiency of IBLC effects on the suppressed loss tangent and the superior breakdown strength. This work explored an effective approach to prepare dielectric nanocomposites for energy storage applications experimentally and theoretically.

Prognostics Health Management and Physics based failure Models for Electrolytic Capacitors

Data.gov (United States)

National Aeronautics and Space Administration — This paper proposes first principles based modeling and prognostics approach for electrolytic capacitors. Electrolytic capacitors and MOSFETs are the two major...

Powering microbial electrolysis cells by capacitor circuits charged using microbial fuel cell

KAUST Repository

Hatzell, Marta C.

2013-05-01

A microbial electrolysis cell (MEC) was powered by a capacitor based energy storage circuit using energy from a microbial fuel cell (MFC) to increase MEC hydrogen production rates compared to that possible by the MFC alone. To prevent voltage reversal, MFCs charged the capacitors in a parallel configuration, and then the capacitors were discharged in series to boost the voltage that was used to power the MECs. The optimal capacitance for charging was found to be ∼0.01 F for each MFC. The use of the capacitor charging system increased energy recoveries from 9 to 13%, and hydrogen production rates increased from 0.31 to 0.72 m3 m-3-day-1, compared to coupled systems without capacitors. The circuit efficiency (the ratio of the energy that was discharged to the MEC to the energy provided to the capacitor from the MFCs) was ∼90%. These results provide an improved method for linking MFCs to MECs for renewable hydrogen gas production. © 2012 Elsevier B.V. All rights reserved.

Performance of ALVAND 1. capacitor bank

International Nuclear Information System (INIS)

Torabi-fard, A.; Farahani, M.; Ebrani, M.; Rostami, R.; Daghighian, F.

1978-01-01

This report describes the specifications of the capacitor bank for the ALVAND I, Linear theta pinch experiment and the results of some tests performed on it. A one-meter-wide module includes the basic components such as capacitors, Spark gaps, and crowbar triggers. Complementary parts such as ground system, pressurised dry air system and safety system were added. With a rise-time of about three micro-seconds and a total current of six million amperes it is possible to produce ion temperature in excess of one kev for a few microseconds. Different probes were used to measure the magnetic field and the total current

Memory characteristics of Au nanocrystals embedded in metal-oxide-semiconductor structure by using atomic-layer-deposited Al2O3 as control oxide

International Nuclear Information System (INIS)

Wang, C.-C.; Chiou, Y.-K.; Chang, C.-H.; Tseng, J.-Y.; Wu, L.-J.; Chen, C.-Y.; Wu, T.-B.

2007-01-01

The nonvolatile memory characteristics of metal-oxide-semiconductor (MOS) structures containing Au nanocrystals in the Al 2 O 3 /SiO 2 matrix were studied. In this work, we have demonstrated that the use of Al 2 O 3 as control oxide prepared by atomic-layer-deposition enhances the erase speed of the MOS capacitors. A giant capacitance-voltage hysteresis loop and a very short erase time which is lower than 1 ms can be obtained. Compared with the conventional floating-gate electrically erasable programmable read-only memories, the erase speed was promoted drastically. In addition, very low leakage current and large turn-around voltage resulting from electrons or holes stored in the Au nanocrystals were found in the current-voltage relation of the MOS capacitors

Characterization of low-temperature microwave loss of thin aluminum oxide formed by plasma oxidation

Energy Technology Data Exchange (ETDEWEB)

Deng, Chunqing, E-mail: cdeng@uwaterloo.ca; Otto, M.; Lupascu, A., E-mail: alupascu@uwaterloo.ca [Institute for Quantum Computing, Department of Physics and Astronomy, and Waterloo Institute for Nanotechnology, University of Waterloo, Waterloo, Ontario N2L 3G1 (Canada)

2014-01-27

We report on the characterization of microwave loss of thin aluminum oxide films at low temperatures using superconducting lumped resonators. The oxide films are fabricated using plasma oxidation of aluminum and have a thickness of 5 nm. We measure the dielectric loss versus microwave power for resonators with frequencies in the GHz range at temperatures from 54 to 303 mK. The power and temperature dependence of the loss are consistent with the tunneling two-level system theory. These results are relevant to understanding decoherence in superconducting quantum devices. The obtained oxide films are thin and robust, making them suitable for capacitors in compact microwave resonators.

Supercapacitors Based on Nickel Oxide/Carbon Materials Composites

Directory of Open Access Journals (Sweden)

Katarzyna Lota

2011-01-01

Full Text Available In the thesis, the properties of nickel oxide/active carbon composites as the electrode materials for supercapacitors are discussed. Composites with a different proportion of nickel oxide/carbon materials were prepared. A nickel oxide/carbon composite was prepared by chemically precipitating nickel hydroxide on an active carbon and heating the hydroxide at 300 ∘C in the air. Phase compositions of the products were characterized using X-ray diffractometry (XRD. The morphology of the composites was observed by SEM. The electrochemical performances of composite electrodes used in electrochemical capacitors were studied in addition to the properties of electrode consisting of separate active carbon and nickel oxide only. The electrochemical measurements were carried out using cyclic voltammetry, galvanostatic charge/discharge, and impedance spectroscopy. The composites were tested in 6 M KOH aqueous electrolyte using two- and three-electrode Swagelok systems. The results showed that adding only a few percent of nickel oxide to active carbon provided the highest value of capacity. It is the confirmation of the fact that such an amount of nickel oxide is optimal to take advantage of both components of the composite, which additionally can be a good solution as a negative electrode in asymmetric configuration of electrode materials in an electrochemical capacitor.

Digital multimeter-based immunosensing strategy for sensitive monitoring of biomarker by coupling an external capacitor with an enzymatic catalysis.

Science.gov (United States)

Tang, Dianping; Zhang, Bing; Liu, Bingqian; Chen, Guonan; Lu, Minghua

2014-05-15

A new digital multimeter (DMM)-based immunosensing system was designed for quantitative monitoring of biomarker (prostate-specific antigen, PSA used in this case) by coupling with an external capacitor and an enzymatic catalytic reaction. The system consisted of a salt bridge-linked reaction cell and a capacitor/DMM-joined electronic circuit. A sandwich-type immunoreaction with target PSA between the immobilized primary antibody and glucose oxidase (GOx)-labeled detection antibody was initially carried out in one of the two half-cells. Accompanying the sandwiched immunocomplex, the conjugated GOx could catalyze the oxidation of glucose, simultaneously resulting in the conversion of [Fe(CN)6](3-) to [Fe(CN)6](4-). The difference in the concentrations of [Fe(CN)6](3-)/[Fe(CN)6](4-) in two half-cells automatically produced a voltage that was utilized to charge an external capacitor. With the closing circuit switch, the capacitor discharged through the DMM, which could provide a high instantaneous current. Under the optimal conditions, the resulting currents was indirectly proportional to the concentration of target PSA in the dynamic range of 0.05-7 ng mL(-1) with a detection limit (LOD) of 6 pg mL(-1). The reproducibility, precision, and selectivity were acceptable. In addition, the methodology was validated by analyzing 12 clinical serum specimens, receiving a good accordance with the referenced values for the detection of PSA. Copyright © 2013 Elsevier B.V. All rights reserved.

Switched-capacitor techniques for high-accuracy filter and ADC design

NARCIS (Netherlands)

Quinn, P.J.; Roermund, van A.H.M.

2007-01-01

Switched capacitor (SC) techniques are well proven to be excellent candidates for implementing critical analogue functions with high accuracy, surpassing other analogue techniques when embedded in mixed-signal CMOS VLSI. Conventional SC circuits are primarily limited in accuracy by a) capacitor

Evaluation of electric double layer capacitor using Ketjenblack as conductive nanofiller

International Nuclear Information System (INIS)

Tashima, Daisuke; Yoshitama, Hiromu; Otsubo, Masahisa; Maeno, Seiji; Nagasawa, Yoshinobu

2011-01-01

Highlights: → The capacitances of electric double layer capacitors (EDLCs) with nanocomposite electrodes were examined. → It was found that the Ketjenblack-containing EDLCs showed fairly high capacitance (150-210 F/g) compared to EDLCs containing acetylene black with the aqueous electrolyte. → A maximum specific capacitance of 252 F/g was obtained in EDLCs containing 20 wt.% KB with a large amount of the surface functional group. → Reduction-oxidation reactions were thought to occur at the interface between the electrolyte and surface functional group, which increased the specific capacitance of the EDLCs. - Abstract: In this study, the capacitances of electric double layer capacitors (EDLCs) with nanocomposite electrodes were examined by analyzing their charge-discharge characteristics and cyclic voltammograms. In addition, the internal resistance of these EDLCs was evaluated using two kinds of conductive nanofillers: acetylene black (AB) and Ketjenblack (KB). Usually, KB exhibits higher electronic conductivity than AB. The temperature dependence of the capacitance and internal resistance of the prepared EDLCs at 0-50 deg. C using an aqueous electrolyte, organic electrolyte, and two kinds of ionic liquids was evaluated. Moreover, the influence on the capacitance and internal resistance when KB containing a surface functional group is used as the conductive nanofiller of the polarized electrode was examined. It was found that the KB-containing EDLCs showed fairly high capacitance (150-210 F/g) compared to EDLCs containing AB with the aqueous electrolyte. In addition, a maximum specific capacitance of 252 F/g was obtained in EDLCs containing 20 wt.% KB with a large amount of the surface functional group. Reduction-oxidation reactions were thought to occur at the interface between the electrolyte and surface functional group, which increased the specific capacitance of the EDLCs.

Integration substrate with a ultra-high-density capacitor and a through-substrate via

NARCIS (Netherlands)

Klootwijk, J.H.; Roozeboom, F.; Ruigrok, J.J.M.; Reefman, D.

2014-01-01

An integration substrate for a system in package comprises a through-substrate via and a trench capacitor wherein with a trench filling that includes at least four electrically conductive capacitor-electrode layers in an alternating arrangement with dielectric layers. --The capacitor-electrode

Lifetime Estimation of Electrolytic Capacitors in Fuel Cell Power Converter at Various Confidence Levels

DEFF Research Database (Denmark)

Zhou, Dao; Wang, Huai; Blaabjerg, Frede

2016-01-01

DC capacitors in power electronic converters are a major constraint on improvement of the power density and the reliability. In this paper, according to the degradation data of tested capacitors, the lifetime model of the component is analyzed at various confidence levels. Then, the mission profile...... based lifetime expectancy of the individual capacitor and the capacitor bank is estimated in a fuel cell backup power converter operating in both standby mode and operation mode. The lifetime prediction of the capacitor banks at different confidence levels is also obtained....

Capacitor Mismatch Error Cancellation Technique for a Successive Approximation A/D Converter

DEFF Research Database (Denmark)

Zheng, Zhiliang; Moon, Un-Ku; Steensgaard-Madsen, Jesper

1999-01-01

An error cancellation technique is described for suppressing capacitor mismatch in a successive approximation A/D converter. At the cost of a 50% increase in conversion time, the first-order capacitor mismatch error is cancelled. Methods for achieving top-plate parasitic insensitive operation...... are described, and the use of a gain- and offset-compensated opamp is explained. SWITCAP simulation results show that the proposed 16-bit SAR ADC can achieve an SNDR of over 91 dB under non-ideal conditions, including 1% 3 sigma nominal capacitor mismatch, 10-20% randomized parasitic capacitors, 66 dB opamp...

Low-dimensional carbon and MXene-based electrochemical capacitor electrodes.

Science.gov (United States)

Yoon, Yeoheung; Lee, Keunsik; Lee, Hyoyoung

2016-04-29

Due to their unique structure and outstanding intrinsic physical properties such as extraordinarily high electrical conductivity, large surface area, and various chemical functionalities, low-dimension-based materials exhibit great potential for application in electrochemical capacitors (ECs). The electrical properties of electrochemical capacitors are determined by the electrode materials. Because energy charge storage is a surface process, the surface properties of the electrode materials greatly influence the electrochemical performance of the cell. Recently, graphene, a single layer of sp(2)-bonded carbon atoms arrayed into two-dimensional carbon nanomaterial, has attracted wide interest as an electrode material for electrochemical capacitor applications due to its unique properties, including a high electrical conductivity and large surface area. Several low-dimensional materials with large surface areas and high conductivity such as onion-like carbons (OLCs), carbide-derived carbons (CDCs), carbon nanotubes (CNTs), graphene, metal hydroxide, transition metal dichalcogenides (TMDs), and most recently MXene, have been developed for electrochemical capacitors. Therefore, it is useful to understand the current issues of low-dimensional materials and their device applications.

Low-dimensional carbon and MXene-based electrochemical capacitor electrodes

International Nuclear Information System (INIS)

Yoon, Yeoheung; Lee, Hyoyoung; Lee, Keunsik

2016-01-01

Due to their unique structure and outstanding intrinsic physical properties such as extraordinarily high electrical conductivity, large surface area, and various chemical functionalities, low-dimension-based materials exhibit great potential for application in electrochemical capacitors (ECs). The electrical properties of electrochemical capacitors are determined by the electrode materials. Because energy charge storage is a surface process, the surface properties of the electrode materials greatly influence the electrochemical performance of the cell. Recently, graphene, a single layer of sp 2 -bonded carbon atoms arrayed into two-dimensional carbon nanomaterial, has attracted wide interest as an electrode material for electrochemical capacitor applications due to its unique properties, including a high electrical conductivity and large surface area. Several low-dimensional materials with large surface areas and high conductivity such as onion-like carbons (OLCs), carbide-derived carbons (CDCs), carbon nanotubes (CNTs), graphene, metal hydroxide, transition metal dichalcogenides (TMDs), and most recently MXene, have been developed for electrochemical capacitors. Therefore, it is useful to understand the current issues of low-dimensional materials and their device applications. (topical review)

Degradation testing and failure analysis of DC film capacitors under high humidity conditions

DEFF Research Database (Denmark)

Wang, Huai; Nielsen, Dennis Achton; Blaabjerg, Frede

2015-01-01

Metallized polypropylene film capacitors are widely used for high-voltage DC-link applications in power electronic converters. They generally have better reliability performance compared to aluminum electrolytic capacitors under electro-thermal stresses within specifications. However......, the degradation of the film capacitors is a concern in applications exposed to high humidity environments. This paper investigates the degradation of a type of plastic-boxed metallized DC film capacitors under different humidity conditions based on a total of 8700 h of accelerated testing and also post failure...... of interest is also presented. The study enables a better understanding of the humidity-related failure mechanisms and reliability performance of DC film capacitors for power electronics applications....

High Voltage Homemade Capacitor Charger for Plasma Focus System

International Nuclear Information System (INIS)

Abdul Halim Baijan; Azaman Ahmad; Rokiah Mohd Sabri; Siti Aiasah Hashim; Mohd Rizal Md Chulan; Wah, L.K.; Azhar Ahmad; Rosli Che Ros; Mohd Faiz Mohd Zin

2015-01-01

A high voltage capacitor charger has been designed and built to replace a high voltage charger type General Atomics CCDs Power Supply which was damaged. The fabrication design was using materials which were easily available in the local market. Among the main components of the high-voltage charger is a transformer for neon lights, variable transformer rated 0 - 240 V 1 KVA, and 240 V transformer isolator. The results of experiments that have been conducted shows that a homemade capacitor charger was able to charge high voltage capacitors up to the required voltage of which was 12 kV. However the time taken for charging is quite long, up to more than 6 minutes. (author)

Integration substrate with a ultra-high-density capacitor and a through-substrate via

NARCIS (Netherlands)

2008-01-01

An integration substrate for a system in package comprises a through-substrate via and a trench capacitor wherein with a trench filling that includes at least 4 elec. conductive capacitor-electrode layers in an alternating arrangement with dielec. layers. The capacitor-electrode layers are

CAPMIX -Deploying Capacitors for Salt Gradient Power Extraction

OpenAIRE

Bijmans, M.F.M.; Burheim, O.S.; Bryjak, M.; Delgado, A.; Hack, P.; Mantegazza, F.; Tenisson, S.; Hamelers, H.V.M.

2012-01-01

The process of mixing sea and river water can be utilised as a power source. At present, three groups of technology are established for doing so; i) mechanical; Pressure Retarded Osmosis PRO, ii) electrochemical reactions; Reverse ElectroDialysis (RED) and Nano Battery Electrodes (NBE) and iii) ultra capacitors; Capacitive Double Layer Expansion (CDLE) and Capacitors charge by the Donnan Potentials (CDP). The chemical potential for salt gradient power systems is only limited by th...

Solvothermal Synthesis of Fe2O3 Loaded Activated Carbon as Electrode Materials for High-performance Electrochemical Capacitors

International Nuclear Information System (INIS)

Li, Ying; Kang, Litao; Bai, Gailing; Li, Peiyang; Deng, Jiachun; Liu, Xuguang; Yang, Yongzhen; Gao, Feng; Liang, Wei

2014-01-01

This article describes a facile solvothermal synthesis method to prepare Fe 2 O 3 /AC composites for electrochemical capacitors from Iron (III) chloride hexahydrate (FeCl 3 ·6H 2 O), activated carbon (AC, from petroleum coke), and four different precipitants (i.e., NaOH, CH 3 COONa, HMT, CO(NH 2 ) 2 ). X-ray powder diffraction (XRD), Scanning electron microscopy (SEM), Energy dispersive spectroscopy (EDS) and Thermogravimetric (TG) analysis show that the products consisted of nanosized α-Fe 2 O 3 (weight ratios: 48.1, 47.9, 44.2, 44.3%) loaded onto AC particles (∼ 20 μm). Significantly, both kind and dosage of precipitants exhibit effects on the specific capacitances of Fe 2 O 3 /AC composites. The highest specific capacitance reaches up to 240 F g −1 (at a current density of 1 A g −1 in 6 M KOH aqueous electrolyte) when the molar ratio of CH 3 COONa: FeCl 3 is 9. On the other hand, the sample prepared with NaOH: FeCl 3 molar ratio being 1.5 exhibits excellent rate capability with specific capacitance of 215 F g −1 at 1 A g −1 , and 89.3, 82.3, 78.1, 72.6 and 65.1% capacity retention at 2, 5, 10, 20, and 40 A g −1 , respectively. These electrochemical performances are superior to other materials consisted of Fe 2 O 3 /carbon nanotube (CNT), graphene oxide (GO) or reduced graphene oxide (rGO) composites, demonstrating the great potential of Fe 2 O 3 /AC composites in the development of high-performance electrode materials for electrochemical capacitors

A frequency output ferroelectric phase PNZT capacitor-based temperature sensor

KAUST Repository

Khan, Naveed; Omran, Hesham; Yao, Yingbang; Salama, Khaled N.; Arsalan, Muhammad

2016-01-01

measured below the Curie temperature of the ferroelectric capacitor. The capacitance of the 20/80 (Zr/Ti) composition PNZT capacitor changes by 29% for a temperature change from 10°C to 100°C, which translates to 0.32%/°C temperature sensitivity

On the stability of silicon field effect capacitors with phosphate buffered saline electrolytic gate and self assembled monolayer gate insulator

International Nuclear Information System (INIS)

Hemed, Nofar Mintz; Inberg, Alexandra; Shacham-Diamand, Yosi

2013-01-01

We herein report on the stability of Electrolyte/Insulator/Semiconductor (EIS) devices with Self-Assembled Monolayer (SAM) gate insulator layers, i.e. Electrolyte/SAM/Semiconductor (ESS) devices. ESS devices can be functionalized creating highly specific sensors that can be integrated on standard silicon platform. However, biosensors by their nature are in contact with biological solutions that contain ions and molecules that may affect the device characteristics and cause electrical instability. In this paper we present a list of potential hazards to ESS devices and a study of the device stability under common testing conditions analyzing possible causes for the instabilities. ESS capacitors under open circuit conditions (i.e. open circuit bias of ∼0.6 V vs. Ag/AgCl reference electrode) were periodically characterized. We measured the complex impedance of the capacitors versus bias and extracted the effective capacitance vs. voltage (C–V) curves using two methods. We observed a parallel shift of the C–V curves toward negative bias; showing an effective accumulation of positive charge. The quantitative analysis of the drift vs. time was found to depend on the effective capacitance evaluation method. This effect is discussed and a best-known method is proposed. The devices surface composition was tested before and after the stress experiment by X-ray Photoelectron Spectroscopy (XPS) and sodium accumulation was observed. To further explore the flat-band voltage drift effect and to challenge the assumption that alkali ions are involved in the drift we conceived a novel alkali-free phosphate buffer saline (AF-PBS) where the sodium and potassium ions are replaced by ammonium ion and tested the capacitor under similar conditions to standard PBS. We found that the drift of the AF-PBS solution was much less at the first hour but was similar to that of the conventional PBS for longer stress times; hence, AF-PBS does not solve the long-term instability problem

Flexible and weaveable capacitor wire based on a carbon nanocomposite fiber.

Science.gov (United States)

Ren, Jing; Bai, Wenyu; Guan, Guozhen; Zhang, Ye; Peng, Huisheng

2013-11-06

A flexible and weaveable electric double-layer capacitor wire is developed by twisting two aligned carbon nanotube/ordered mesoporous carbon composite fibers with remarkable mechanical and electronic properties as electrodes. This capacitor wire exhibits high specific capacitance and long life stability. Compared with the conventional planar structure, the capacitor wire is also lightweight and can be integrated into various textile structures that are particularly promising for portable and wearable electronic devices. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

High voltage capacitor design and the determination of solid dielectric voltage breakdown

International Nuclear Information System (INIS)

Hutapea, S.

1976-01-01

The value of the external field intensity serves as an electrical insulating material and is a physical characteristic of the substance. Capacitor discharge in the dielectric medium are experimentally investigated. The high voltage power supply and other instrument needed are briefly discussed. Capacitors with working voltage of 30.000 volt and the plastic being used for dielectrics in the capacitors are also discussed. (author)

Enhancement of dielectric breakdown strengths in polymer film capacitors

International Nuclear Information System (INIS)

Binder, M.; Mammone, R.J.; Lavene, B.; Rondeau, E.

1992-01-01

This paper reports that breakdown voltages of wound, polymer film/metal foil capacitors have been dramatically increased by briefly exposing them (after they had been spirally wound) to a low pressure, low temperature gas plasma. Exposure of wound, polycarbonate-based capacitors to a 96%CF 4 /4%O 2 gas plasma for 4 minutes, for example, produced a 200% increase in breakdown voltage

Helping students understand real capacitors: measuring efficiencies in a school laboratory

International Nuclear Information System (INIS)

Simeão Carvalho, Paulo; Sampaio e Sousa, Adriano

2008-01-01

A recent reform in the Portuguese secondary school curriculum reintroduced the study of capacitors. Thus we decided to implement some experimental activities on this subject with our undergraduate students in physics education courses. A recent announcement of a new kind of capacitor being developed by a team of scientists at Massachusetts Institute of Technology (MIT), which makes use of nanotechnologies, was a great motivation for the study of a topic that could easily be considered 'out of time'. Since this new kind of capacitor is being seen as the battery of the future, our focus was essentially on efficiency measurements, motivating students to obtain, respectively, the time constant and the energies stored and supplied during the charge and discharge processes, from experimental graphics representing the power as a function of time in real capacitors

Optimal siting of capacitors in radial distribution network using Whale Optimization Algorithm

Directory of Open Access Journals (Sweden)

D.B. Prakash

2017-12-01

Full Text Available In present days, continuous effort is being made in bringing down the line losses of the electrical distribution networks. Therefore proper allocation of capacitors is of utmost importance because, it will help in reducing the line losses and maintaining the bus voltage. This in turn results in improving the stability and reliability of the system. In this paper Whale Optimization Algorithm (WOA is used to find optimal sizing and placement of capacitors for a typical radial distribution system. Multi objectives such as operating cost reduction and power loss minimization with inequality constraints on voltage limits are considered and the proposed algorithm is validated by applying it on standard radial systems: IEEE-34 bus and IEEE-85 bus radial distribution test systems. The results obtained are compared with those of existing algorithms. The results show that the proposed algorithm is more effective in bringing down the operating costs and in maintaining better voltage profile. Keywords: Whale Optimization Algorithm (WOA, Optimal allocation and sizing of capacitors, Power loss reduction and voltage stability improvement, Radial distribution system, Operating cost minimization

Lifetime Estimation of DC-link Capacitors in a Single-phase Converter with an Integrated Active Power Decoupling Module

DEFF Research Database (Denmark)

Ma, Siyuan; Wang, Haoran; Tang, Junchaojie

2016-01-01

In single-phase inverters, DC-link capacitors are installed at the DC-link to buffer the ripple power between the AC side and DC side. Active decoupling methods introduce additional circuits at the DC side or AC side to partially or fully supply the ripple power. So that the demanded DC-link capa......In single-phase inverters, DC-link capacitors are installed at the DC-link to buffer the ripple power between the AC side and DC side. Active decoupling methods introduce additional circuits at the DC side or AC side to partially or fully supply the ripple power. So that the demanded DC......-link capacitor capacitance can be decreased. However, few research is about the effect of DC side and AC side decoupling on the DC-link capacitor reliability considering its electro-thermal stresses. This paper presents a quantitative analysis on the lifetime of capacitors with power decoupling circuits...... at the DC side and AC side, respectively. The ripple current spectrum of the capacitors is obtained by double Fourier analysis of a H-bridge inverter with natural sampling PWM modulation. A study case is demonstrated by a 2,000 W H-bridge inverter with 400 V DC-link voltage....

Enhanced DC-Link Capacitor Voltage Balancing Control of DC–AC Multilevel Multileg Converters

DEFF Research Database (Denmark)

Busquets-Monge, Sergio; Maheshwari, Ram Krishan; Nicolas-Apruzzese, Joan

2015-01-01

This paper presents a capacitor voltage balancing control applicable to any multilevel dc–ac converter formed by a single set of series-connected capacitors implementing the dc link and semiconductor devices, such as the diode-clamped topology. The control is defined for any number of dc-link vol......This paper presents a capacitor voltage balancing control applicable to any multilevel dc–ac converter formed by a single set of series-connected capacitors implementing the dc link and semiconductor devices, such as the diode-clamped topology. The control is defined for any number of dc...

Digital Realization of Capacitor-Voltage Feedback Active Damping for LCL-Filtered Grid Converters

DEFF Research Database (Denmark)

Xin, Zhen; Wang, Xiongfei; Loh, Poh Chiang

2015-01-01

The capacitor voltage of an LCL-filter can also be used for active damping, if it is fed back for synchronization. By this way, an extra current sensor can be avoided. Compared with the existing active damping techniques designed with capacitor current feedback, the capacitor voltage feedback....... To overcome their drawbacks, a new derivative method is then proposed, based on the non-ideal generalized integrator. The performance of the proposed derivative has been found to match the ideal “s” function closely. Active damping based on capacitor voltage feedback can therefore be realized accurately...

Lg = 100 nm In0.7Ga0.3As quantum well metal-oxide semiconductor field-effect transistors with atomic layer deposited beryllium oxide as interfacial layer

International Nuclear Information System (INIS)

Koh, D.; Kwon, H. M.; Kim, T.-W.; Veksler, D.; Gilmer, D.; Kirsch, P. D.; Kim, D.-H.; Hudnall, Todd W.; Bielawski, Christopher W.; Maszara, W.; Banerjee, S. K.

2014-01-01

In this study, we have fabricated nanometer-scale channel length quantum-well (QW) metal-oxide-semiconductor field effect transistors (MOSFETs) incorporating beryllium oxide (BeO) as an interfacial layer. BeO has high thermal stability, excellent electrical insulating characteristics, and a large band-gap, which make it an attractive candidate for use as a gate dielectric in making MOSFETs. BeO can also act as a good diffusion barrier to oxygen owing to its small atomic bonding length. In this work, we have fabricated In 0.53 Ga 0.47 As MOS capacitors with BeO and Al 2 O 3 and compared their electrical characteristics. As interface passivation layer, BeO/HfO 2 bilayer gate stack presented effective oxide thickness less 1 nm. Furthermore, we have demonstrated In 0.7 Ga 0.3 As QW MOSFETs with a BeO/HfO 2 dielectric, showing a sub-threshold slope of 100 mV/dec, and a transconductance (g m,max ) of 1.1 mS/μm, while displaying low values of gate leakage current. These results highlight the potential of atomic layer deposited BeO for use as a gate dielectric or interface passivation layer for III–V MOSFETs at the 7 nm technology node and/or beyond

Simple hardware implementation of voltage balancing in capacitor-clamped inverter

Czech Academy of Sciences Publication Activity Database

Kokeš, Petr; Semerád, Radko

2009-01-01

Roč. 54, č. 4 (2009), s. 325-341 ISSN 0001-7043 R&D Projects: GA MPO FT-TA4/077 Institutional research plan: CEZ:AV0Z20570509 Keywords : capacitor -clamped multilevel inverter * flying capacitor voltage balancing * pulse width modulation (PWM) Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering

Enhancement of the electrical characteristics of MOS capacitors by reducing the organic content of H2O-diluted Spin-On-Glass based oxides

International Nuclear Information System (INIS)

Molina, Joel; Munoz, Ana; Torres, Alfonso; Landa, Mauro; Alarcon, Pablo; Escobar, Manuel

2011-01-01

In this work, the physical, chemical and electrical properties of Metal-Oxide-Semiconductor (MOS) capacitors with Spin-On-Glass (SOG)-based thin films as gate dielectric have been investigated. Experiments of SOG diluted with two different solvents (2-propanol and deionized water) were done in order to reduce the viscosity of the SOG solution so that thinner films (down to ∼20 nm) could be obtained and their general characteristics compared. Thin films of SOG were deposited on silicon by the sol-gel technique and they were thermally annealed using conventional oxidation furnace and Rapid Thermal Processing (RTP) systems within N 2 ambient after deposition. SOG dilution using non-organic solvents like deionized water and further annealing (at relatively high temperatures ≥450 deg. C) are important processes intended to reduce the organic content of the films. Fourier-Transform Infrared (FTIR) Spectroscopy results have shown that water-diluted SOG films have a significant reduction in their organic content after increasing annealing temperature and/or dilution percentage when compared to those of undiluted SOG films. Both current-voltage (I-V) and capacitance-voltage (C-V) measurements show better electrical characteristics for SOG-films diluted in deionized water compared to those diluted in 2-propanol (which is an organic solvent). The electrical characteristics of H 2 O-diluted SOG thin films are very similar to those obtained from high quality thermal oxides so that their application as gate dielectrics in MOS devices is promising. Finally, it has been demonstrated that by reducing the organic content of SOG-based thin films, it is possible to obtain MOS devices with better electrical properties.

Development of novel segmented-plate linearly tunable MEMS capacitors

International Nuclear Information System (INIS)

Shavezipur, M; Khajepour, A; Hashemi, S M

2008-01-01

In this paper, novel MEMS capacitors with flexible moving electrodes and high linearity and tunability are presented. The moving plate is divided into small and rigid segments connected to one another by connecting beams at their end nodes. Under each node there is a rigid step which selectively limits the vertical displacement of the node. A lumped model is developed to analytically solve the governing equations of coupled structural-electrostatic physics with mechanical contact. Using the analytical solver, an optimization program finds the best set of step heights that provides the highest linearity. Analytical and finite element analyses of two capacitors with three-segmented- and six-segmented-plate confirm that the segmentation technique considerably improves the linearity while the tunability remains as high as that of a conventional parallel-plate capacitor. Moreover, since the new designs require customized fabrication processes, to demonstrate the applicability of the proposed technique for standard processes, a modified capacitor with flexible steps designed for PolyMUMPs is introduced. Dimensional optimization of the modified design results in a combination of high linearity and tunability. Constraining the displacement of the moving plate can be extended to more complex geometries to obtain smooth and highly linear responses