Deeply virtual compton scattering at 6 GeV

International Nuclear Information System (INIS)

Berthot, J.; Chen, J.P.; Chudakov, E.

2000-01-01

We propose a measurement of the Deep Virtual Compton Scattering process (DVCS) ep → epγ in Hall A at Jefferson Lab with a 6 GeV beam. We are able to explore the onset of Q 2 scaling, by measuring a beam helicity asymmetry for Q 2 ranging from 1.5 to 2.5 GeV 2 at x B ∼0.35. At this kinematics, the asymmetry is dominated by the DVCS - Bethe-Heitler (BH) interference, which is proportional to the imaginary part of the DVCS amplitude amplified by the full magnitude of the BH amplitude. The imaginary part of the DVCS amplitude is expected to scale early. Indeed, the imaginary part of the forward Compton amplitude measured in deep inelastic scattering (via the optical theorem) scales at Q 2 as low as 1 GeV 2 . If the scaling regime is reached, we will make an 8% measurement of the skewed parton distributions (SPD) contributing to the DVCS amplitude. Also, this experiment allows us to separately estimate the size of the higher-twist effects, since they are only suppressed by an additional factor 1/Q compared to the leading-twist term, and have a different angular dependence. We use a polarized electron beam and detect the scattered electron in the HRSe, the real photon in an electromagnetic calorimeter (under construction) and the recoil proton in a shielded scintillator array (to be constructed). This allows as to determine the difference in cross-sections for electrons of opposite helicities. This observable is directly linked to the SPD's. We estimate that 25 days of beam (600 hours) are needed to achieve this goal. (authors)

Magnetoresistance in two-dimensional array of Ge/Si quantum dots

Science.gov (United States)

Stepina, N. P.; Koptev, E. S.; Pogosov, A. G.; Dvurechenskii, A. V.; Nikiforov, A. I.; Zhdanov, E. Yu

2012-07-01

Magnetoresistance in two-dimensional array of Ge/Si was studied for a wide range of the conductance, where the transport regime changes from hopping to diffusive one. The behavior of magnetoresistance is similar for all samples; it is negative in weak fields and becomes positive with increasing of magnetic field. Negative magnetoresistance can be described in the frame of weak localization approach with suggestion that quantum interference contribution to the conductance is restricted not only by the phase breaking length but also by the localization length.

Magnetoresistance in two-dimensional array of Ge/Si quantum dots

International Nuclear Information System (INIS)

Stepina, N P; Koptev, E S; Pogosov, A G; Dvurechenskii, A V; Nikiforov, A I; Zhdanov, E Yu

2012-01-01

Magnetoresistance in two-dimensional array of Ge/Si was studied for a wide range of the conductance, where the transport regime changes from hopping to diffusive one. The behavior of magnetoresistance is similar for all samples; it is negative in weak fields and becomes positive with increasing of magnetic field. Negative magnetoresistance can be described in the frame of weak localization approach with suggestion that quantum interference contribution to the conductance is restricted not only by the phase breaking length but also by the localization length.

Deeply virtual compton scattering at 6 GeV

Energy Technology Data Exchange (ETDEWEB)

Berthot, J. [Universite Blaise Pascal, Clermont-Ferrand II, Lab. de Physique Corpusculaire (CNRS), 63 - Aubiere (France); Chen, J.P.; Chudakov, E. [National Accelerator Facility, Newport News, Virginia (United States)] [and others

2000-07-01

We propose a measurement of the Deep Virtual Compton Scattering process (DVCS) ep {yields} ep{gamma} in Hall A at Jefferson Lab with a 6 GeV beam. We are able to explore the onset of Q{sup 2} scaling, by measuring a beam helicity asymmetry for Q{sup 2} ranging from 1.5 to 2.5 GeV{sup 2} at x{sub B}{approx}0.35. At this kinematics, the asymmetry is dominated by the DVCS - Bethe-Heitler (BH) interference, which is proportional to the imaginary part of the DVCS amplitude amplified by the full magnitude of the BH amplitude. The imaginary part of the DVCS amplitude is expected to scale early. Indeed, the imaginary part of the forward Compton amplitude measured in deep inelastic scattering (via the optical theorem) scales at Q{sup 2} as low as 1 GeV{sup 2}. If the scaling regime is reached, we will make an 8% measurement of the skewed parton distributions (SPD) contributing to the DVCS amplitude. Also, this experiment allows us to separately estimate the size of the higher-twist effects, since they are only suppressed by an additional factor 1/Q compared to the leading-twist term, and have a different angular dependence. We use a polarized electron beam and detect the scattered electron in the HRSe, the real photon in an electromagnetic calorimeter (under construction) and the recoil proton in a shielded scintillator array (to be constructed). This allows as to determine the difference in cross-sections for electrons of opposite helicities. This observable is directly linked to the SPD's. We estimate that 25 days of beam (600 hours) are needed to achieve this goal. (authors)

Edinburgh doctors and their physic gardens.

Science.gov (United States)

Doyle, D

2008-12-01

Edinburgh has had eight physic gardens on different sites since its first one was created by the Incorporation of Barbers and Surgeons in 1656. As the gardens grew in size, they evolved from herb gardens to botanic gardens with small herbaria for the supply of medical herbs. They were intended for the instruction of medical, surgical and apothecary students and, in the case of the physicians, to demonstrate the need for a physicians' college and a pharmacopoeia. Some of the doctors in charge of them were equally famous and influential in botany as in medicine, and while Edinburgh Town Council enjoyed the fame the gardens brought to the city it was parsimonious and slow to support its botanical pioneers. The gardens are celebrated today in the Sibbald Garden within the Royal College of Physicians of Edinburgh.

5@5 - A 5 GeV Energy Threshold Array of Imaging Atmospheric Cherenkov Telescopes at 5 km Altitude

Science.gov (United States)

Aharonian, F. A.; Konopelko, A. K.; Voelk, H. J.; Quintana, H.

2000-10-01

We discuss the concept and the performance of 5@5 - a stereoscopic array of several large imaging atmospheric Cherenkov telescopes installed at a very high mountain elevation of about 5 km a.s.l. or more - for the study of the gamma-ray sky at energies from several GeV to 100 GeV. With its capability to detect the ``standard'' EGRET sources with spectra extending up to 10 GeV in exposure times from 1 to 103 seconds, such a detector may serve as an ideal "Gamma-Ray Timing Explorer" for the study of transient non-thermal phenomena like gamma-radiation from AGN jets, synchrotron flares of microquasars, the high energy (GeV) counterparts of Gamma Ray Bursts, etc. Such an instrument would also allow detailed studies of the spectral characteristics of persistent gamma-ray sources like pulsars, supernova remnants, plerions, radiogalaxies, etc, in the energy region between 10 GeV and 100 GeV, where the capabilities of both the current space-based and ground-based gamma-ray projects are quite limited. The existing technological achievements in the design and construction of multi (1000) pixel, high resolution imagers, as well as of large, 20 m diameter class multi-mirror dishes with rather modest optical requirements, would allow the construction of the "5@5" in a foreseeable future. The Llano de Chajnantor (or the neighboring Cerro Toco) in the Atacama desert of Northern Chile seems an ideal site for such a ``post - CANGAROO/H.E.S.S./MAGIC/VERITAS'' era ground-based gamma-ray detector. The large flat area of that site, which was recently chosen for the installation of one of the most powerful future astronomical instruments - the Atacama Large Millimeter Array (ALMA) - could accomodate also an additional Cherenkov telescope array which requires a relatively compact area with a radius of about 100 m.

GeSn growth kinetics in reduced pressure chemical vapor deposition from Ge2H6 and SnCl4

Science.gov (United States)

Aubin, J.; Hartmann, J. M.

2018-01-01

We have investigated the low temperature epitaxy of high Sn content GeSn alloys in a 200 mm industrial Reduced Pressure - Chemical Vapor Deposition tool from Applied Materials. Gaseous digermane (Ge2H6) and liquid tin tetrachloride (SnCl4) were used as the Ge and Sn precursors, respectively. The impact of temperature (in the 300-350 °C range), Ge2H6 and SnCl4 mass-flows on the GeSn growth kinetics at 100 Torr has been thoroughly explored. Be it at 300 °C or 325 °C, a linear GeSn growth rate increase together with a sub-linear Sn concentration increase occurred as the SnCl4 mass-flow increased, irrespective of the Ge2H6 mass flow (fixed or varying). The Sn atoms seemed to catalyze H desorption from the surface, resulting in higher GeSn growth rates for high SnCl4 mass-flows (in the 4-21 nm min-1 range). The evolution of the Sn content x with the F (SnCl4) 2 ·/F (Ge2H6) mass-flow ratio was fitted by x2/(1 - x) = n ·F (SnCl4) 2 ·/F (Ge2H6), with n = 0.25 (325 °C) and 0.60 (300 °C). We have otherwise studied the impact of temperature, in the 300-350 °C range, on the GeSn growth kinetics. The GeSn growth rate exponentially increased with the temperature, from 15 up to 32 nm min-1. The associated activation energy was low, i.e. Ea = 10 kcal mol-1. Meanwhile, the Sn content decreased linearly as the growth temperature increased, from 15% at 300 °C down to 6% at 350 °C.

Botany in Edinburgh's Medical Curriculum.

Science.gov (United States)

Wilson, Hazel

2012-01-01

In the early 18th century, at the founding of Edinburgh University Medical School, the study of botany was regarded as an essential component of medical training. Botanical teaching began as basic instruction in the recognition of medical plants, considered a vital aspect of a physician's Materia Medica studies. Over the next hundred years growing importance was given to the study of botany as a science, its popularity peaking under John Hutton Balfour's tenure as Professor (1845-1879). The relevance of botanical study later declined in the undergraduate medical curriculum until its cessation in 1961 .This paper considers the history of botanical studies in Edinburgh, including the reasons for its introduction and its changing importance over time.

Transport planning in Dublin and Edinburgh

Energy Technology Data Exchange (ETDEWEB)

Whitney, W.J.; O' Mahoney, M.M. [Trinity College, Dublin (Ireland). Dept. of Civil, Structural and Environmental Engineering

1999-08-01

Dublin and Edinburgh are cities of broadly comparable size, form, history and function. Both face similar transport and related problems. In the mid-to-late twentieth century, their policies in these areas have been similar in some respects but differed markedly in others. This paper establishes similarities in form and function between the cities and outlines and reviews the past four decades or so of transport planning in both cases. Notable areas of contrast are identified and are reviewed in greater depth, special attention being given to areas where Edinburgh's experience relates to current debates in Dublin. The principal areas examined include the comparison between light rail transit (LRT) and busways, underground operation of LRT in city centres, the structure of public consultation processes, the differences between strategic studies recommending a single strategy and those offering a choice, and road pricing as a restraint strategy. Finally, conclusions are drawn from this examination, particular attention being given to areas where Edinburgh's experience might be of interest to Dublin. (author)

Prediction of superconducting ternary hydride MgGeH6: from divergent high-pressure formation routes.

Science.gov (United States)

Ma, Yanbin; Duan, Defang; Shao, Ziji; Li, Da; Wang, Liyuan; Yu, Hongyu; Tian, Fubo; Xie, Hui; Liu, Bingbing; Cui, Tian

2017-10-18

Invigorated by the high temperature superconductivity in some binary hydrogen-dominated compounds, we systematically explored high-pressure phase diagrams and superconductivity of a ternary Mg-Ge-H system using ab initio methods. Stoichiometric MgGeH 6 with high hydrogen content exhibiting Pm3[combining macron] symmetry was predicted from a series of high-pressure synthesis paths. We performed an in-depth study on three distinct formation routes to MgGeH 6 , i.e., Mg + Ge + 3H 2 → MgGeH 6 , MgGe + 3H 2 → MgGeH 6 and MgH 2 + GeH 4 → MgGeH 6 at high pressures. By directly squeezing three elemental solids Mg + Ge + 3H 2 , we obtained ternary MgGeH 6 at 200 GPa. By adding a little bit of the MgGe alloy into hydrogen, we found that MgGeH 6 can form and stabilize at about 200 GPa. More intriguingly, upon compressing MgH 2 and GeH 4 to 250 GPa, we also predicted the same MgGeH 6 . Electron structure calculations reveal that the cubic MgGeH 6 is a good metal and takes on ionic character. Electron-phonon coupling calculation reveals a large λ = 1.16 for MgGeH 6 at 200 GPa. In particular, we found that ternary MgGeH 6 could be a potential high temperature superconductor with a superconducting transition temperature T c of ∼67 K at 200 GPa.

Molecules for materials: germanium hydride neutrals and anions. Molecular structures, electron affinities, and thermochemistry of GeHn/GeHn- (n = 0-4) and Ge2Hn/Ge2Hn(-) (n = 0-6).

Science.gov (United States)

Li, Qian-Shu; Lü, Rui-Hua; Xie, Yaoming; Schaefer, Henry F

2002-12-01

The GeH(n) (n = 0-4) and Ge(2)H(n) (n = 0-6) systems have been studied systematically by five different density functional methods. The basis sets employed are of double-zeta plus polarization quality with additional s- and p-type diffuse functions, labeled DZP++. For each compound plausible energetically low-lying structures were optimized. The methods used have been calibrated against a comprehensive tabulation of experimental electron affinities (Chemical Reviews 102, 231, 2002). The geometries predicted in this work include yet unknown anionic species, such as Ge(2)H(-), Ge(2)H(2)(-), Ge(2)H(3)(-), Ge(2)H(4)(-), and Ge(2)H(5)(-). In general, the BHLYP method predicts the geometries closest to the few available experimental structures. A number of structures rather different from the analogous well-characterized hydrocarbon radicals and anions are predicted. For example, a vinylidene-like GeGeH(2) (-) structure is the global minimum of Ge(2)H(2) (-). For neutral Ge(2)H(4), a methylcarbene-like HGë-GeH(3) is neally degenerate with the trans-bent H(2)Ge=GeH(2) structure. For the Ge(2)H(4) (-) anion, the methylcarbene-like system is the global minimum. The three different neutral-anion energy differences reported in this research are: the adiabatic electron affinity (EA(ad)), the vertical electron affinity (EA(vert)), and the vertical detachment energy (VDE). For this family of molecules the B3LYP method appears to predict the most reliable electron affinities. The adiabatic electron affinities after the ZPVE correction are predicted to be 2.02 (Ge(2)), 2.05 (Ge(2)H), 1.25 (Ge(2)H(2)), 2.09 (Ge(2)H(3)), 1.71 (Ge(2)H(4)), 2.17 (Ge(2)H(5)), and -0.02 (Ge(2)H(6)) eV. We also reported the dissociation energies for the GeH(n) (n = 1-4) and Ge(2)H(n) (n = 1-6) systems, as well as those for their anionic counterparts. Our theoretical predictions provide strong motivation for the further experimental study of these important germanium hydrides. Copyright 2002 Wiley

Penguin breeding in Edinburgh

NARCIS (Netherlands)

Gillespie, T.H.; F.R.S.E.,; F.Z.S.,

1939-01-01

The Scottish National Zoological Park at Edinburgh has been notably successful in keeping and breeding penguins. It is happy in possessing as a friend and benefactor, Mr Theodore E. Salvesen, head of the firm of Christian Salvesen & Co., Leith, to whose interest and generosity it owes the great

Measurement of Atmospheric Neutrino Oscillations at 6-56 GeV with IceCube DeepCore

Science.gov (United States)

Aartsen, M. G.; Ackermann, M.; Adams, J.; Aguilar, J. A.; Ahlers, M.; Ahrens, M.; Al Samarai, I.; Altmann, D.; Andeen, K.; Anderson, T.; Ansseau, I.; Anton, G.; Argüelles, C.; Auffenberg, J.; Axani, S.; Bagherpour, H.; Bai, X.; Barron, J. P.; Barwick, S. W.; Baum, V.; Bay, R.; Beatty, J. J.; Becker Tjus, J.; Becker, K.-H.; BenZvi, S.; Berley, D.; Bernardini, E.; Besson, D. Z.; Binder, G.; Bindig, D.; Blaufuss, E.; Blot, S.; Bohm, C.; Börner, M.; Bos, F.; Bose, D.; Böser, S.; Botner, O.; Bourbeau, J.; Bradascio, F.; Braun, J.; Brayeur, L.; Brenzke, M.; Bretz, H.-P.; Bron, S.; Brostean-Kaiser, J.; Burgman, A.; Carver, T.; Casey, J.; Casier, M.; Cheung, E.; Chirkin, D.; Christov, A.; Clark, K.; Classen, L.; Coenders, S.; Collin, G. H.; Conrad, J. M.; Cowen, D. F.; Cross, R.; Day, M.; de André, J. P. A. M.; De Clercq, C.; DeLaunay, J. J.; Dembinski, H.; De Ridder, S.; Desiati, P.; de Vries, K. D.; de Wasseige, G.; de With, M.; DeYoung, T.; Díaz-Vélez, J. C.; di Lorenzo, V.; Dujmovic, H.; Dumm, J. P.; Dunkman, M.; Eberhardt, B.; Ehrhardt, T.; Eichmann, B.; Eller, P.; Evenson, P. A.; Fahey, S.; Fazely, A. R.; Felde, J.; Filimonov, K.; Finley, C.; Flis, S.; Franckowiak, A.; Friedman, E.; Fuchs, T.; Gaisser, T. K.; Gallagher, J.; Gerhardt, L.; Ghorbani, K.; Giang, W.; Glauch, T.; Glüsenkamp, T.; Goldschmidt, A.; Gonzalez, J. G.; Grant, D.; Griffith, Z.; Haack, C.; Hallgren, A.; Halzen, F.; Hanson, K.; Hebecker, D.; Heereman, D.; Helbing, K.; Hellauer, R.; Hickford, S.; Hignight, J.; Hill, G. C.; Hoffman, K. D.; Hoffmann, R.; Hokanson-Fasig, B.; Hoshina, K.; Huang, F.; Huber, M.; Hultqvist, K.; Hünnefeld, M.; In, S.; Ishihara, A.; Jacobi, E.; Japaridze, G. S.; Jeong, M.; Jero, K.; Jones, B. J. P.; Kalaczynski, P.; Kang, W.; Kappes, A.; Karg, T.; Karle, A.; Katz, U.; Kauer, M.; Keivani, A.; Kelley, J. L.; Kheirandish, A.; Kim, J.; Kim, M.; Kintscher, T.; Kiryluk, J.; Kittler, T.; Klein, S. R.; Kohnen, G.; Koirala, R.; Kolanoski, H.; Köpke, L.; Kopper, C.; Kopper, S.; Koschinsky, J. P.; Koskinen, D. J.; Kowalski, M.; Krings, K.; Kroll, M.; Krückl, G.; Kunnen, J.; Kunwar, S.; Kurahashi, N.; Kuwabara, T.; Kyriacou, A.; Labare, M.; Lanfranchi, J. L.; Larson, M. J.; Lauber, F.; Lennarz, D.; Lesiak-Bzdak, M.; Leuermann, M.; Liu, Q. R.; Lu, L.; Lünemann, J.; Luszczak, W.; Madsen, J.; Maggi, G.; Mahn, K. B. M.; Mancina, S.; Maruyama, R.; Mase, K.; Maunu, R.; McNally, F.; Meagher, K.; Medici, M.; Meier, M.; Menne, T.; Merino, G.; Meures, T.; Miarecki, S.; Micallef, J.; Momenté, G.; Montaruli, T.; Moore, R. W.; Moulai, M.; Nahnhauer, R.; Nakarmi, P.; Naumann, U.; Neer, G.; Niederhausen, H.; Nowicki, S. C.; Nygren, D. R.; Obertacke Pollmann, A.; Olivas, A.; O'Murchadha, A.; Palczewski, T.; Pandya, H.; Pankova, D. V.; Peiffer, P.; Pepper, J. A.; Pérez de los Heros, C.; Pieloth, D.; Pinat, E.; Plum, M.; Price, P. B.; Przybylski, G. T.; Raab, C.; Rädel, L.; Rameez, M.; Rawlins, K.; Rea, I. C.; Reimann, R.; Relethford, B.; Relich, M.; Resconi, E.; Rhode, W.; Richman, M.; Robertson, S.; Rongen, M.; Rott, C.; Ruhe, T.; Ryckbosch, D.; Rysewyk, D.; Sälzer, T.; Sanchez Herrera, S. E.; Sandrock, A.; Sandroos, J.; Sarkar, S.; Sarkar, S.; Satalecka, K.; Schlunder, P.; Schmidt, T.; Schneider, A.; Schoenen, S.; Schöneberg, S.; Schumacher, L.; Seckel, D.; Seunarine, S.; Soedingrekso, J.; Soldin, D.; Song, M.; Spiczak, G. M.; Spiering, C.; Stachurska, J.; Stamatikos, M.; Stanev, T.; Stasik, A.; Stettner, J.; Steuer, A.; Stezelberger, T.; Stokstad, R. G.; Stößl, A.; Strotjohann, N. L.; Sullivan, G. W.; Sutherland, M.; Taboada, I.; Tatar, J.; Tenholt, F.; Ter-Antonyan, S.; Terliuk, A.; Tešić, G.; Tilav, S.; Toale, P. A.; Tobin, M. N.; Toscano, S.; Tosi, D.; Tselengidou, M.; Tung, C. F.; Turcati, A.; Turley, C. F.; Ty, B.; Unger, E.; Usner, M.; Vandenbroucke, J.; Van Driessche, W.; van Eijndhoven, N.; Vanheule, S.; van Santen, J.; Vehring, M.; Vogel, E.; Vraeghe, M.; Walck, C.; Wallace, A.; Wallraff, M.; Wandler, F. D.; Wandkowsky, N.; Waza, A.; Weaver, C.; Weiss, M. J.; Wendt, C.; Werthebach, J.; Westerhoff, S.; Whelan, B. J.; Wiebe, K.; Wiebusch, C. H.; Wille, L.; Williams, D. R.; Wills, L.; Wolf, M.; Wood, J.; Wood, T. R.; Woolsey, E.; Woschnagg, K.; Xu, D. L.; Xu, X. W.; Xu, Y.; Yanez, J. P.; Yodh, G.; Yoshida, S.; Yuan, T.; Zoll, M.; IceCube Collaboration

2018-02-01

We present a measurement of the atmospheric neutrino oscillation parameters using three years of data from the IceCube Neutrino Observatory. The DeepCore infill array in the center of IceCube enables the detection and reconstruction of neutrinos produced by the interaction of cosmic rays in Earth's atmosphere at energies as low as ˜5 GeV . That energy threshold permits measurements of muon neutrino disappearance, over a range of baselines up to the diameter of the Earth, probing the same range of L /Eν as long-baseline experiments but with substantially higher-energy neutrinos. This analysis uses neutrinos from the full sky with reconstructed energies from 5.6 to 56 GeV. We measure Δ m322=2.31-0.13+0.11×10-3 eV2 and sin2θ23=0.5 1-0.09+0.07, assuming normal neutrino mass ordering. These results are consistent with, and of similar precision to, those from accelerator- and reactor-based experiments.

Selective epitaxial growth properties and strain characterization of Si1- x Ge x in SiO2 trench arrays

Science.gov (United States)

Koo, Sangmo; Jang, Hyunchul; Ko, Dae-Hong

2017-04-01

In this study, we investigated the formation of a Si1- x Ge x fin structure in SiO2 trench arrays via an ultra-high-vacuum chemical-vapor deposition (UHV-CVD) selective epitaxial growth (SEG) process. Defect generation and microstructures of Si1- x Ge x fin structures with different Ge concentrations ( x = 0.2, 0.3 and 0.45) were examined. In addition, the strain evolution of a Si1- x Ge x fin structure was analyzed by using reciprocal space mapping (RSM). An (111) facet was formed from the Si1- x Ge x epi-layer and SiO2 trench wall interface to minimize the interface and the surface energy. The Si1- x Ge x fin structures were fully relaxed along the direction perpendicular to the trenches regardless of the Ge concentration. On the other hand, the fin structures were fully or partially strained along the direction parallel to the trenches depending on the Ge concentration: fully strained Si0.8Ge0.2 and Si0.7Ge0.3, and a Si0.55Ge0.45 strain-relaxed buffer. We further confirmed that the strain on the Si1- x Ge x fin structures remained stable after oxide removal and H2/N2 post-annealing.

Energy distributions study of spallation neutrons produced at 0 deg. by proton beams (0.8 GeV and 1.6 GeV) and deuteron beams (1.2 and 1.6 GeV)

International Nuclear Information System (INIS)

Martinez, Eugenie

1997-01-01

We are studying the energy distributions of spallation neutrons produced at 0 deg. by protons of 0.8 GeV up to 1.6 GeV and deuterons of 1.2 and 1.6 GeV with two complementary experimental techniques: the time of flight measurement with tagged incident protons for low energy neutrons (3-400 MeV) and the use of a magnetic spectrometer at high energy (E ≥ 200 MeV). These measurements enable us to measure for the first time the neutron spectra for incident energies higher than 800 MeV. We have compared the double differential cross sections produced with 1.2 GeV protons on several thin targets (Al, Fe, Zr, W, Pb and Th). The neutron production obtained for a lead target is also studied for various energies (0.8 up to 1.6 GeV) and incident particles (p, d). Data are compared with theoretical simulations carried out using the TIERCE system and the intranuclear cascade model of J. Cugnon associated to the decay code of D. Durand. The neutron spectra calculated by using the HETC and MCNP codes, included in TIERCE, are significantly higher than the measured distributions. A better agreement is observed with the results of the Cugnon's cascade model. (author) [fr

The Enduring Legacy of 250 Years of Pharmacology in Edinburgh.

Science.gov (United States)

Kelly, John S; Mackay, Angus V P

2018-01-06

In 1768, 250 years ago, the University of Edinburgh appointed Francis Home to the first chair of materia medica, the accumulated knowledge of materials used in healing. Francis Home and his colleagues were determined to improve the quality of medical training in Edinburgh by introducing a final examination and compiling a catalog of medicines validated by the Royal College of Physicians of Edinburgh. The catalog, known as the Edinburgh Pharmacopoeia, was a great success, partly due to the orderly nature of its contents, its routine editing to eliminate worthless entries, and the introduction of new treatments whose preparation was precisely documented. In a relatively short time, the worth of the Edinburgh Pharmacopoeia was recognized throughout Europe, America, and the British Empire. Today, the British and European Pharmacopoeias are catalogs of publicly available, legally enforceable standards for active pharmaceutical ingredients and finished dosage forms of pharmaceutical products and medical devices. Home and the many luminaries who succeeded him would surely take pleasure and pride in the fact that the mantra of today's medicines regulators worldwide is little different from that of these early visionaries: "To take better advantage of the best possible science in the service of the public health and our health-care systems" ( 1 , p. 492).

Freemasonry in Edinburgh, 1721-1746 : institutions and context

OpenAIRE

Kahler, Lisa

1998-01-01

It was not until after the mid-eighteenth century that the masonic lodges in Edinburgh became common meeting ground for the social and intellectual elite. While there are examples of these types of men joining before 1750, it was after this watershed date that some of the key men associated with enlightenment thinking in Scotland became members of Edinburgh lodges. Robert Adam, Hugh Blair, Lord Monboddo, James Gregory, Henry Mackenzie and Dugald Stewart are only a few examples of men who made...

Electronic structure of Ag8GeS6

Directory of Open Access Journals (Sweden)

D.I. Bletskan

2017-04-01

Full Text Available For the first time, the energy band structure, total and partial densities of states of Ag8GeS6 crystal were calculated using the ab initio density functional method in LDA and LDA+U approximations. Argyrodite is direct-gap semiconductor with the calculated band gap width Egd = 1.46 eV in the LDA+U approximation. The valence band of argyrodite contains four energy separated groups of occupied subzones. The unique feature of electron-energy structure of Ag8GeS6 crystal is the energy overlapping between the occupied d-states of Ag atoms and the delocalized valence p-states of S atoms in relatively close proximity to the valence band top.

Conceptual design of the Argonne 6-GeV synchrotron light source

International Nuclear Information System (INIS)

Cho, Y.; Crosbie, E.; Khoe, T.

1985-01-01

The Argonne National Laboratory Synchrotron Light Source Storage Ring is designed to have a natural emittance of 6.5 X 10 -9 m for circulating 6-GeV positrons. Thirty of the 32 long straight sections, each 6.5-m long, will be available for synchrotron light insertion devices. A circulating positron current of 300 mA can be injected in about 8 min. from a booster synchrotron operating with a repetition time of 1.2 sec. The booster synchrotron will contain two different rf systems. The lower frequency system (38.97 MHz) will accept positrons from a 360-MeV linac and will accelerate them to 2.25 GeV. The higher frequency system (350.76 MHz) will accelerate the positrons to 6 GeV. The positrons will be produced from a 300-MeV electron beam on a tungsten target

Study Of Solar Charging Facility For Electric Vehicles In Edinburgh

Directory of Open Access Journals (Sweden)

Walid Nassar

2015-08-01

Full Text Available The solar power system decreases carbon dioxide CO2 emissions which are the lead cause of global warming. This paper presented a novel way to design a commercial solar photovoltaic PV farm to provide electricity for 10 of the Edinburgh domestic car fleet. The design is used for sizing of the solar system based on an excel spreadsheets. The results show that the proposed solar system reduces the CO2 emissions with around 95 less than the conventional energy system. Around 0.5TWh of electrical energy is required to meet Edinburgh domestic car fleet whenever converted to electrical vehicles. The PV solar panels at the investigated site has a capacity factor of around 12. The dynamic tilt angle is estimated for the investigated site while the fixed tilt angle is determined to be 49. Depending on dynamic solar panels leads to harvesting more solar energy than depending on fixed tilt angle around 14 higher energy. The meter square of land in Edinburgh receive some 950KWh per year based on the dynamic tilt angle. Around 218000 of solar panels are required to meet 10 of Edinburgh domestic car fleet.

SiGe Integrated Circuit Developments for SQUID/TES Readout

Science.gov (United States)

Prêle, D.; Voisin, F.; Beillimaz, C.; Chen, S.; Piat, M.; Goldwurm, A.; Laurent, P.

2018-03-01

SiGe integrated circuits dedicated to the readout of superconducting bolometer arrays for astrophysics have been developed since more than 10 years at APC. Whether for Cosmic Microwave Background (CMB) observations with the QUBIC ground-based experiment (Aumont et al. in astro-ph.IM, 2016. arXiv:1609.04372) or for the Hot and Energetic Universe science theme with the X-IFU instrument on-board of the ATHENA space mission (Barret et al. in SPIE 9905, space telescopes & instrumentation 2016: UV to γ Ray, 2016. https://doi.org/10.1117/12.2232432), several kinds of Transition Edge Sensor (TES) (Irwin and Hilton, in ENSS (ed) Cryogenic particle detection, Springer, Berlin, 2005) arrays have been investigated. To readout such superconducting detector arrays, we use time or frequency domain multiplexers (TDM, FDM) (Prêle in JINST 10:C08015, 2016. https://doi.org/10.1088/1748-0221/10/08/C08015) with Superconducting QUantum Interference Devices (SQUID). In addition to the SQUID devices, low-noise biasing and amplification are needed. These last functions can be obtained by using BiCMOS SiGe technology in an Application Specific Integrated Circuit (ASIC). ASIC technology allows integration of highly optimised circuits specifically designed for a unique application. Moreover, we could reach very low-noise and wide band amplification using SiGe bipolar transistor either at room or cryogenic temperatures (Cressler in J Phys IV 04(C6):C6-101, 1994. https://doi.org/10.1051/jp4:1994616). This paper discusses the use of SiGe integrated circuits for SQUID/TES readout and gives an update of the last developments dedicated to the QUBIC telescope and to the X-IFU instrument. Both ASIC called SQmux128 and AwaXe are described showing the interest of such SiGe technology for SQUID multiplexer controls.

Cluster self-organization of germanate systems: suprapolyhedral precursor clusters and self-assembly of K2Nd4Ge4O13(OH)4, K2YbGe4O10(OH), K2Sc2Ge2O7(OH)2, and KScGe2O6(PYR)

International Nuclear Information System (INIS)

Ilyushin, G.D.; Dem'yanets, L.N.

2008-01-01

One performed the computerized (the TOPOS 4.0 software package) geometric and topological analyses of all known types of K, TR-germanates (TR = La-Lu, Y, Sc, In). The skeleton structure are shown as three-dimensional 3D, K, TR, Ge-patterns (graphs) with remote oxygen atoms. TR 4 3 3 4 3 3 + T 4 3 4 3, K 2 YbGe 4 O 14 (OH) pattern, TR 6 6 3 6 + T1 6 8 6 + T2 3 6 8, K 2 Sc 2 Ge 2 O 7 (OH) 2 , TR 6 4 6 4 + T 6 4 6 and KScGe 2 O 6 - TR 6 6 3 6 3 4 + T1 6 3 6 + T2 6 4 3 patterns served as crystal-forming 2D TR,Ge-patterns for K 2 Nd 4 Ge 4 O 13 (OH) 4 . One performed the 3D-simulation of the mechanism of self-arrangement of the crystalline structures: cluster-precursor - parent chain - microlayer - microskeleton (super-precursor). Within K 2 Nd 4 Ge 4 O 13 (OH) 4 , K 2 Sc 2 Ge 2 O 7 (OH) 2 and KScGe 2 O 6 one identified the invariant type of the cyclic hexapolyhedral cluster-precursor consisting of TR-octahedrons linked by diorthogroups stabilized by K atoms. For K 2 Nd 4 Ge 4 O 13 (OH) 4 one determined the type of the cyclic tetrapolyhedral cluster-precursor consisting of TR-octavertices linked by tetrahedrons. The cluster CN within the layer just for KScGe 2 O 6 water-free germanate (the PYR pyroxene analog) is equal to 6 (the maximum possible value), while in the rest OH-containing germanates it constitutes 4. One studied the formation mechanism of Ge-radicals in the form of Ge 2 O 7 and Ge 4 O 13 groupings, GeO 3 chain and the tubular structure consisting of Ge 8 O 20 fixed cyclic groupings [ru

Conceptual design of the Argonne 6-GeV synchrotron light source

International Nuclear Information System (INIS)

Cho, Y.; Crosbie, E.; Khoe, T.

1985-01-01

The Argonne National Laboratory Synchrotron Light Source Storage Ring is designed to have a natural emittance of 6.5 x 10 -9 m for circulating 6-GeV positrons. Thirty of the 32 long straight sections, each 6.5-m long, will be available for synchrotron light insertion devices. A circulating positron current of 300 mA can be injected in about 8 min. from a booster synchrotron operating with a repetition time of 1.2 sec. The booster synchrotron will contain two different RF systems. The lower frequency system (38.97 MHz) will accept positrons from a 360-MeV linac and will accelerate them to 2.25 GeV. The higher frequency system (350.76 MHz) will accelerate the positrons to 6 GeV. The positrons will be produced from a 300-MeV electron beam on a tungsten target. A conceptual layout is shown

HENRY H. CHEEK AND TRANSFORMISM: NEW LIGHT ON CHARLES DARWIN'S EDINBURGH BACKGROUND.

Science.gov (United States)

Jenkins, Bill

2015-06-20

Evidence for the transformist ideas espoused by Henry H. Cheek (1807-33), a contemporary of Charles Darwin's at the University of Edinburgh, sheds new light on the intellectual environment of Edinburgh in the late 1820s and early 1830s. Cheek was the author of several papers dealing with the transmutation of species influenced by the theories of Etienne Geoffroy Saint-Hilaire (1772-1844), Jean-Baptiste Lamarck (1744-1829) and the Comte de Buffon (1707-88). Some of these were read to student societies, others appeared in the Edinburgh Journal of Natural and Geographical Science, which Cheek edited between 1829 and 1831. His writings give us a valuable window onto some of the transformist theories that were circulating among Darwin's fellow medical students in the late 1820s, to which Darwin would have been exposed during his time in Edinburgh, and for which little other concrete evidence survives.

High Stability Induced by the TiN/Ti Interlayer in Three-Dimensional Si/Ge Nanorod Arrays as Anode in Micro Lithium Ion Battery.

Science.gov (United States)

Yue, Chuang; Yu, Yingjian; Wu, Zhenguo; Sun, Shibo; He, Xu; Li, Juntao; Zhao, Libo; Wu, Suntao; Li, Jing; Kang, Junyong; Lin, Liwei

2016-03-01

Three-dimensional (3D) Si/Ge-based micro/nano batteries are promising lab-on-chip power supply sources because of the good process compatibility with integrated circuits and Micro/Nano-Electro-Mechanical System technologies. In this work, the effective interlayer of TiN/Ti thin films were introduced to coat around the 3D Si nanorod (NR) arrays before the amorphous Ge layer deposition as anode in micro/nano lithium ion batteries, thus the superior cycling stability was realized by reason for the restriction of Si activation in this unique 3D matchlike Si/TiN/Ti/Ge NR array electrode. Moreover, the volume expansion properties after the repeated lithium-ion insertion/extraction were experimentally investigated to evidence the superior stability of this unique multilayered Si composite electrode. The demonstration of this wafer-scale, cost-effective, and Si-compatible fabrication for anodes in Li-ion micro/nano batteries provides new routes to configurate more efficient 3D energy storage systems for micro/nano smart semiconductor devices.

Magnetic properties of the germanides RE3Pt4Ge6 (RE=Y, Pr, Nd, Sm, Gd-Dy)

International Nuclear Information System (INIS)

Eustermann, Fabian; Eilers-Rethwisch, Matthias; Renner, Konstantin; Hoffmann, Rolf-Dieter; Poettgen, Rainer; Janka, Oliver; Oldenburg Univ.

2017-01-01

The germanides RE 3 Pt 4 Ge 6 (RE=Y, Pr, Nd, Sm, Gd-Dy) have been synthesized by arc-melting of the elements followed by inductive annealing to improve the crystallinity and allow for structural order. The compounds have been studied by powder X-ray diffraction; additionally the structure of Y 3 Pt 4 Ge 6 has been refined from single-crystal X-ray diffractometer data. It exhibits a (3+1)D modulated structure, indicating isotypism with Ce 3 Pt 4 Ge 6 . The crystal structure can be described as an intergrowth between YIrGe 2 - and CaBe 2 Ge 2 -type slabs along [100]. Temperature-dependent magnetic susceptibility measurements showed Pauli paramagnetism for Y 3 Pt 4 Ge 6 and Curie-Weiss paramagnetism for Pr 3 Pt 4 Ge 6 and Nd 3 Pt 4 Ge 6 . Sm 3 Pt 4 Ge 6 exhibits van Vleck paramagnetism, while antiferromagnetic ordering at T N =8.1(1) K and T N =11.0(1) K is observed for Gd 3 Pt 4 Ge 6 and Tb 3 Pt 4 Ge 6 , respectively.

New levels in 168Er: Use of a Compton-suppressed Ge array with the (n,γ) reaction

International Nuclear Information System (INIS)

Gill, R.L.; Casten, R.F.; Phillips, W.R.; Varley, B.J.; Lister, C.J.; Durell, J.L.; Shannon, J.A.; Warner, D.D.

1996-01-01

For the first time an (n,γ) reaction has been extensively studied using a large array of Compton-suppressed Ge detectors (the TESSA array). The nucleus 168 Er was studied and the data show substantial improvement, in both quantity and quality, over previous coincidence data. Even though 168 Er is perhaps the best studied deformed nucleus, over 250 new coincidence relations and a number of new levels in 168 Er were disclosed, demonstrating the usefulness of this approach. Nuclear physics applications relate to the extension of nearly complete spectroscopy to higher excitation energies and to the study of statistical and chaotic features of the decay of low spin compound nuclear levels. copyright 1996 The American Physical Society

Comparisons of radiation dosimetry between Louvain (Belgium) and Edinburgh (UK)

International Nuclear Information System (INIS)

Law, J.; Prignot, M.; Wambersie, A.

1975-01-01

A comparison of radiation dosimetry performed between Edinburgh and Louvain using the FeSO 4 system, was reported. The procedure adopted provided comparisons both of solution response and of spectrophotometer calibration, and also provided a comparison of ionization dosimetry and irradiation techniques at the two centres. Therefore dosimeter solutions were prepared in both centres, FeSO 4 samples were irradiated either in Edinburgh (4 MV X-rays) or in Louvain ( 60 Co), finally optical densities were measured using the spectrophotometer of either centre. For these different comparisons, the samples were transported once of twice. An agreement between the two centres better than 1% was observed, both for ionization dosimetry and irradiation techniques and for spectrophotometer calibration. The ratio of Louvain to Edinburgh solution response was found close to 1 (0.998+-0.004). However, a previous comparison showed a discrepancy of 2% which illustrates the care needed in checking the purity of the solution components and mainly of the distilled water

151Eu nuclear resonant inelastic scattering of Eu3Pd20Ge6

International Nuclear Information System (INIS)

Tsutsui, S.; Yoda, Y.; Kobayashi, Y.; Higashitaniguchi, S.; Seto, M.; Kitagawa, J.; Takabatake, T.

2010-01-01

151 Eu nuclear resonant inelastic scattering of Eu 3 Pd 20 Ge 6 . The Eu partial phonon density of states (DOS) in Eu 3 Pd 20 Ge 6 are investigated using 151 Eu nuclear resonance inelastic scattering (NRIS). 151 Eu NRIS was carried out at BL09XU of SPring-8. Significant temperature dependence was found in the partial phonon DOS. Judging from the valence change at the Eu 4a site and the comparison with the ab initio calculation of Eu 3 Pd 20 Ge 6 , the change of the Eu DOS is caused by the electronic states. On the other hand, significant acoustic contribution was found even at the guest site of the Eu ones. In addition, slower average velocity than transverse sound velocity was obtained by Eu partial phonon DOS. Considering that heat is carried by the acoustic phonon in materials, the present results demonstrate that the moderate thermal insulation in Eu 3 Pd 20 Ge 6 is connected with the observation of slow average sound velocity at the Eu sites. (K.F.)

Impact parameter analysis of proton-antiproton elastic scattering from √s=7.6 GeV to √s=546 GeV

International Nuclear Information System (INIS)

Fearnley, T.

1985-09-01

The proton-antiproton elastic profile function GAMMA (b) and inelastic overlap function Gsub(in)(b) are calculated from a coherent set of proton-antiproton elastic scattering data at Psub(L)=30 and 50 GeV/c (√s=7.6 and 9.8 GeV), and at √s=53 and 546 GeV. The energy dependence of Gsub(in)(b) is studied in the low energy regime and in the high energy regime. The increase of the inelastic cross section from 50 GeV/c to 30 GeV/c and from √s=53 GeV to √s=546 GeV is found to originate from a peripheral increase of Gsub(in) around 1 fm, accompanied by a non-negligible central increase. The proton-antiproton collision at √s=53 GeV is shown to be slightly less absorptive centrally than pp at this energy, while it is more absorptive peripherally around 1.2 fm. The inelastic overlap functions strongly disagree with the predictions of geometrical scaling and factorizing eikonal models, both in the low energy regime psub(L)=30-50 GeV/c and in the high energy regime √s=53-546 GeV

Review of Edinburgh Lyceum Theatre Production of Hannah Cowley's The Belle's Stratagem

Directory of Open Access Journals (Sweden)

Tanya M. Caldwell

2018-05-01

Full Text Available This article reviews the production of Hannah Cowley's The Belle's Stratagem directed by Tony Cownie and produced for the Lyceum Theatre in Edinburgh in February and March 2018. In setting the play in Edinburgh and placing emphasis on its women characters, Cownie underscores the universal and timeless relevance of Cowley's play as well as its performance versatility.

Ultrahigh-pressure polyamorphism in GeO2 glass with coordination number >6

Science.gov (United States)

Kono, Yoshio; Kenney-Benson, Curtis; Ikuta, Daijo; Shibazaki, Yuki; Wang, Yanbin; Shen, Guoyin

2016-03-01

Knowledge of pressure-induced structural changes in glasses is important in various scientific fields as well as in engineering and industry. However, polyamorphism in glasses under high pressure remains poorly understood because of experimental challenges. Here we report new experimental findings of ultrahigh-pressure polyamorphism in GeO2 glass, investigated using a newly developed double-stage large-volume cell. The Ge-O coordination number (CN) is found to remain constant at ∼6 between 22.6 and 37.9 GPa. At higher pressures, CN begins to increase rapidly and reaches 7.4 at 91.7 GPa. This transformation begins when the oxygen-packing fraction in GeO2 glass is close to the maximal dense-packing state (the Kepler conjecture = ∼0.74), which provides new insights into structural changes in network-forming glasses and liquids with CN higher than 6 at ultrahigh-pressure conditions.

Evolution and Engineering of Precisely Controlled Ge Nanostructures on Scalable Array of Ordered Si Nano-pillars

Science.gov (United States)

Wang, Shuguang; Zhou, Tong; Li, Dehui; Zhong, Zhenyang

2016-06-01

The scalable array of ordered nano-pillars with precisely controllable quantum nanostructures (QNs) are ideal candidates for the exploration of the fundamental features of cavity quantum electrodynamics. It also has a great potential in the applications of innovative nano-optoelectronic devices for the future quantum communication and integrated photon circuits. Here, we present a synthesis of such hybrid system in combination of the nanosphere lithography and the self-assembly during heteroepitaxy. The precise positioning and controllable evolution of self-assembled Ge QNs, including quantum dot necklace(QDN), QD molecule(QDM) and quantum ring(QR), on Si nano-pillars are readily achieved. Considering the strain relaxation and the non-uniform Ge growth due to the thickness-dependent and anisotropic surface diffusion of adatoms on the pillars, the comprehensive scenario of the Ge growth on Si pillars is discovered. It clarifies the inherent mechanism underlying the controllable growth of the QNs on the pillar. Moreover, it inspires a deliberate two-step growth procedure to engineer the controllable QNs on the pillar. Our results pave a promising avenue to the achievement of desired nano-pillar-QNs system that facilitates the strong light-matter interaction due to both spectra and spatial coupling between the QNs and the cavity modes of a single pillar and the periodic pillars.

Steve Boardman and Julian Goodare, eds., Kings, Lords and Men in Scotland and Britain, 1300–1625: Essays in Honour of Jenny Wormald. Edinburgh: Edinburgh University Press, 2014. Pp. 368. ISBN: 9780748691500. £75.00.

Directory of Open Access Journals (Sweden)

Lucinda Dean

2015-08-01

Full Text Available Steve Boardman and Julian Goodare, eds., Kings, Lords and Men in Scotland and Britain, 1300–1625: Essays in Honour of Jenny Wormald. Edinburgh: Edinburgh University Press, 2014. Pp. 368. ISBN: 9780748691500. £75.00.

Validation of the Edinburgh Depression Scale during pregnancy

NARCIS (Netherlands)

Bergink, Veerle; Kooistra, Libbe; Lambregtse-van den Berg, Mijke P.; Wijnen, Henny; Bunevicius, Robertas; van Baar, Anneloes; Pop, Victor

Background: Untreated depression during pregnancy may have adverse outcomes for the mother and her child. Screening for depression in the general pregnant population is thus recommended. The Edinburgh Depression Scale (EDS) is widely used for postpartum depression screening. There is no consensus on

Edinburgh and its role in the foundation of Sydney Medical School.

Science.gov (United States)

Walker-Smith, J

2006-12-01

In 1882, Thomas Anderson Stuart (1856-1920) was appointed as Foundation Professor of Physiology and Anatomy at the University of Sydney. At the time he was Assistant-Professor of Physiology in the University of Edinburgh. He initiated the building of the Sydney Medical School in Scottish Tudor Gothic style. He attracted notable figures to Sydney Medical School, such as Dr Robert Scot Skirving. The original medical school (now the Anderson Stuart Building) continues today as the pre-clinical medical school of the University of Sydney. Its stained glass windows and many busts of distinguished figures in the history of medicine are a constant reminder of the history of medicine. The building with its gothic architecture and echoes of northern Britain has given generations of Sydney medical students a powerful message, that they were part of an ancient and noble profession. The recruitment of Edinburgh academics to Sydney ended with Professor CG Lambie who retired in 1956. The 1950s were a watershed between the Edinburgh heritage and the Australian future.

New quaternary thallium indium germanium selenide TlInGe2Se6: Crystal and electronic structure

Science.gov (United States)

Khyzhun, O. Y.; Parasyuk, O. V.; Tsisar, O. V.; Piskach, L. V.; Myronchuk, G. L.; Levytskyy, V. O.; Babizhetskyy, V. S.

2017-10-01

Crystal structure of a novel quaternary thallium indium germanium selenide TlInGe2Se6 was investigated by means of powder X-ray diffraction method. It was determined that the compound crystallizes in the trigonal space group R3 with the unit cell parameters a = 10.1798(2) Å, c = 9.2872(3) Å. The relationship with similar structures was discussed. The as-synthesized TlInGe2Se6 ingot was tested with X-ray photoelectron spectroscopy (XPS) and X-ray emission spectroscopy (XES). In particular, the XPS valence-band and core-level spectra were recorded for initial and Ar+ ion-bombarded surfaces of the sample under consideration. The XPS data allow for statement that the TlInGe2Se6 surface is rigid with respect to Ar+ ion-bombardment. Particularly, Ar+ ion-bombardment (3.0 keV, 5 min duration, ion current density fixed at 14 μA/cm2) did not cause substantial modifications of stoichiometry in topmost surface layers. Furthermore, comparison on a common energy scale of the XES Se Kβ2 and Ge Kβ2 bands and the XPS valence-band spectrum reveals that the principal contributions of the Se 4p and Ge 4p states occur in the upper and central portions of the valence band of TlInGe2Se6, respectively, with also their substantial contributions in other portions of the band. The bandgap energy of TlInGe2Se6 at the level of αg=103 cm-1 is equal to 2.38 eV at room temperature.

Benjamin Rush, Edinburgh Medicine and the Rise of Physician Autobiography.

Science.gov (United States)

Jones, Catherine

2014-01-01

This chapter explores the place of Scottish medicine in the autobiographical writing of the Philadelphia physician and signer of the American Declaration of Independence, Benjamin Rush, who studied at the University of Edinburgh from 1766 to 1768. It focuses on Rush's 'Scottish journal' (his account of his period of study in Edinburgh), his protracted feud from 1797 over his treatment of yellow fever with the English journalist, politician and agriculturalist William Cobbett, and his account in 'Travels through Life' of that feud and of the influence of Cullen on his medical theory and practice. The different rhetorical strategies used by Rush to defend his character and practice and his role in the rise of physician autobiography are examined.

Ionic conductivity of sodium–strontium germanate Na{sub 4}SrGe{sub 6}O{sub 15}

Energy Technology Data Exchange (ETDEWEB)

Sorokin, N. I., E-mail: nsorokin1@yandex.ru [Russian Academy of Sciences, Shubnikov Institute of Crystallography, Federal Scientific Research Centre “Crystallography and Photonics” (Russian Federation)

2017-03-15

The electrical conductivity of sodium–strontium germanate Na{sub 4}SrGe{sub 6}O{sub 15} (sp. gr. P6{sub 3}/m) has been studied by impedance spectroscopy in the frequency range of 10{sup 2}–4 × 10{sup 4} Hz and a temperature range of 450–600 K. Na4SrGe6O15 crystals were obtained by hydrothermal technique in the Na{sub 2}O–SrO–GeO{sub 2}–H{sub 2}O system (temperature t = 300–600°C and pressure p = 1.4 × 10{sup 8} Pа in the dissolution zone). The ionic conductivity of ceramic Na{sub 4}SrGe{sub 6}O{sub 15} samples is σ = 2.2 × 10{sup –6} S/cm (at 573 K), the activation energy of Na{sup +} ion transfer is E{sub a} = 0.70 ± 0.03 eV.

Exclusive processes at JLab at 6 GeV

Directory of Open Access Journals (Sweden)

Kim Andrey

2015-01-01

Full Text Available Deeply virtual exclusive reactions provide a unique opportunity to probe the complex internal structure of the nucleon. They allow to access information about the correlations between parton transverse spatial and longitudinal momentum distributions from experimental observables. Dedicated experiments to study Deeply Virtual Compton Scattering (DVCS and Deeply Virtual Meson Production (DVMP have been carried out at Jefferson Lab using continuous electron beam with energies up to 6 GeV. Unpolarized cross sections, beam, target and double spin asymmetries have been measured for DVCS as well as for π0 exclusive electroproduction. The data from Hall B provide a wide kinematic coverage with Q2=1-4.5 GeV2, xB=0.1-0.5, and −t up to 2 GeV2. Hall A data have limited kinematic range partially overlapping with Hall B kinematics but provide a high accuracy measurements. Scaling tests of the DVCS cross sections provide solid evidence of twist-2 dominance, which makes chiral-even GPDs accessible even at modest Q2. We will discuss the interpretation of these data in terms of Generalized Parton Distributions (GPDs model. Successful description of the recent CLAS π0 exclusive production data within the framework of the GPD-based model provides a unique opportunity to access the chiral-odd GPDs.

Thermal expansion and magnetostriction of clathrate compound Pr3Pd20Ge6

Science.gov (United States)

Matsumoto, K.; Sekiguchi, Y.; Iwakami, O.; Ono, T.; Abe, S.; Ano, G.; Akatsu, M.; Mitsumoto, K.; Nemoto, Y.; Goto, T.; Takeda, N.; Kitazawa, H.

2018-03-01

In Pr3Pd20Ge6, the Pr ions are located at two different crystallographic sites, 4a and 8c site. Antiferro-quadrupole ordering (AFQ) of the 8c site occurs at 250 mK. Ac susceptibility measurement indicated that antiferromagnetic ordering (AFM) of the 4a site and Hyperfine-enhanced Pr nuclear magnetic ordering of the 8c site occur at 77 and 9 mK, respectively. To clarify the magnetic and quadrupole properties of Pr3Pd20Ge6, thermal expansion and magnetostriction measurements on single crystal sample were carried out along the [001] direction up to 8 T down to 500 μK using a capacitive dilatometer. In zero field, relative length change ΔL/L in [001] direction had a dip at AFQ and abrupt decrease at AFM ordering. From thermal expansion and isothermal magnetostriction measurements, magnetic phase diagram of Pr3Pd20Ge6 along [001] direction was obtained.

Synthesis and photoluminescence spectroscopy of BaGeF6:Mn4+ red phosphor

Science.gov (United States)

Sekiguchi, Daisuke; Adachi, Sadao

2015-04-01

We synthesized Mn4+-activated BaGeF6 red phosphor by the chemical reaction method from HF, H2SiF6, BaF2, KMnO4, and GeO2 powder. The structural and optical properties of BaGeF6:Mn4+ were investigated using X-ray diffraction analysis, secondary electron microscopy observation, electron spin resonance measurement, photoluminescence (PL), PL excitation (PLE) and Raman scattering spectroscopies, and luminescence decay time measurement. Temperature dependence of the PL intensity was measured from T = 20 to 500 K and analyzed by taking into consideration the Bose-Einstein phonon occupation number. The PLE spectra measured at T = 20 and 300 K and luminescence decay time at T = 20-460 K were also analyzed based on the Franck-Condon and conventional thermal quenching models, respectively. Comprehensive discussion was given on the Mn4+-related PL properties and Raman scattering behaviors in a family of the barium hexafluorometallate phosphors.

Magnetic properties of the germanides RE{sub 3}Pt{sub 4}Ge{sub 6} (RE=Y, Pr, Nd, Sm, Gd-Dy)

Energy Technology Data Exchange (ETDEWEB)

Eustermann, Fabian; Eilers-Rethwisch, Matthias; Renner, Konstantin; Hoffmann, Rolf-Dieter; Poettgen, Rainer [Muenster Univ. (Germany). Inst. fuer Anorganische und Analytische Chemie; Janka, Oliver [Muenster Univ. (Germany). Inst. fuer Anorganische und Analytische Chemie; Oldenburg Univ. (Germany). Inst. fuer Chemie

2017-07-01

The germanides RE{sub 3}Pt{sub 4}Ge{sub 6} (RE=Y, Pr, Nd, Sm, Gd-Dy) have been synthesized by arc-melting of the elements followed by inductive annealing to improve the crystallinity and allow for structural order. The compounds have been studied by powder X-ray diffraction; additionally the structure of Y{sub 3}Pt{sub 4}Ge{sub 6} has been refined from single-crystal X-ray diffractometer data. It exhibits a (3+1)D modulated structure, indicating isotypism with Ce{sub 3}Pt{sub 4}Ge{sub 6}. The crystal structure can be described as an intergrowth between YIrGe{sub 2}- and CaBe{sub 2}Ge{sub 2}-type slabs along [100]. Temperature-dependent magnetic susceptibility measurements showed Pauli paramagnetism for Y{sub 3}Pt{sub 4}Ge{sub 6} and Curie-Weiss paramagnetism for Pr{sub 3}Pt{sub 4}Ge{sub 6} and Nd{sub 3}Pt{sub 4}Ge{sub 6}. Sm{sub 3}Pt{sub 4}Ge{sub 6} exhibits van Vleck paramagnetism, while antiferromagnetic ordering at T{sub N}=8.1(1) K and T{sub N}=11.0(1) K is observed for Gd{sub 3}Pt{sub 4}Ge{sub 6} and Tb{sub 3}Pt{sub 4}Ge{sub 6}, respectively.

Adsorption/desorption properties of vacuum materials for the 6 GeV synchrotron

International Nuclear Information System (INIS)

Krauss, A.R.

1985-01-01

Considerable attention must be paid to the vacuum and adsorption/desorption properties of all materials installed inside the vacuum envelope if the design goals of the 6 GeV synchrotron are to be met. Unfortunately, the data is very sparse in several key areas. Additionally, some procedures normally associated with good vacuum practice, such as air baking, may prove to be totally unsuitable on the basis of desorption properties. We present here a brief discussion of the adsorption, outgassing, electron-stimulated desorption (ESD), and photon-stimulated desorption (PSD) properties of vacuum materials as they relate to the design of a 6 GeV synchrotron

Development of FIR arrays with integrating amplifiers

Science.gov (United States)

Young, Erick T.

1988-08-01

The development of optimized photoconductor arrays suitable for far infrared space astronomical applications are described. Although the primary impetus is the production of a 16 by 16 element Ge:Ga demonstration array for SIRTF, the extension of this technology to Large Deployable Reflector (LDR) is considered. The optimization of Ge:Ga and Ge:Be photoconductor materials is discussed. In collaboration with Lawrence Berkeley Laboratory, measurements of FIR photoconductors with quantum efficiencies greater than 20 percent at 100 micrometers, and dark currents below 300 electrons/s are presented. Integrating J-FET amplifier technology is discussed. The current generation of integrating amplifiers has a demonstrated read noise of less than 20 electrons for an integration time of 100 s. The design is shown for a stackable 16 x n Ge:Ga array that utilizes a 16-channel monolithic version of the J-FET integrator. A part of the design is the use of a thin, thermally insulating substrate that allows the electronics to operate at the optimum temperature of 50 K while maintaining thermal and optical isolation from the detectors at 2 K. The power dissipation for the array is less than 16 mW. The array design may particularly be applicable to high resolution imaging spectrometers for LDR.

Death in the New Town: Edinburgh's hidden story of stonemasons' silicosis.

Science.gov (United States)

Donaldson, K; Wallace, W A; Henry, C; Seaton, A

2017-12-01

The building of the Edinburgh New Town, from the mid-18th to the mid-19th centuries, was a major advance in harmonious and elegant town planning. However, there is anecdotal evidence that it led to the occurrence of an epidemic of silicosis/tuberculosis among the stonemasons. We have reviewed contemporary accounts of the episode and early records of the understanding of silicosis. We have also studied the lung of a contemporary stonemason, preserved in the museum of the Royal College of Surgeons of Edinburgh, and confirmed the presence of silico-tuberculosis in it. The evidence shows that a major epidemic did occur, caused by a combination of factors. The size of the undertaking attracted many stonemasons to Edinburgh over a period of almost 100 years, intensively cutting and dressing stone. The principal stone worked was a very high-quartz sandstone, derived from the local Craigleith quarry, having properties that made it desirable for prestige buildings. However, even before the construction of the New Town, Craigleith sandstone was notorious for its dustiness and the Edinburgh stonemasons worked the stone in unventilated sheds. Stonemasons appeared to be aware of the risk of their trade, but little was known about preventive measures. It appears it was assumed that the risks to stonemasons disappeared after the Craigleith quarry closed, the employers emphasising (without evidence) the lack of health risks in other quarries, and the tragic episode appears to have been forgotten. However, we point to the continuing occurrence of silicosis among stonemasons to the present day; the importance of remembering such episodes is stressed lest the lessons of the past be forgotten.

Electronic structure and optical properties of noncentrosymmetric LiGaGe{sub 2}Se{sub 6}, a promising nonlinear optical material

Energy Technology Data Exchange (ETDEWEB)

Lavrentyev, A.A.; Gabrelian, B.V.; Vu, V.T.; Ananchenko, L.N. [Department of Electrical Engineering and Electronics, Don State Technical University, 1 Gagarin Square, 344010 Rostov-on-Don (Russian Federation); Isaenko, L.I. [Laboratory of Crystal Growth, Institute of Geology and Mineralogy, SB RAS, 43 Russkaya Street, 630090 Novosibirsk (Russian Federation); Laboratory of Semiconductor and Dielectric Materials, Novosibirsk State University, 2 Pirogova Street, 630090 Novosibirsk (Russian Federation); Yelisseyev, A.; Krinitsin, P.G. [Laboratory of Crystal Growth, Institute of Geology and Mineralogy, SB RAS, 43 Russkaya Street, 630090 Novosibirsk (Russian Federation); Khyzhun, O.Y., E-mail: khyzhun@ipms.kiev.ua [Frantsevych Institute for Problems of Materials Science, National Academy of Sciences of Ukraine, 3 Krzhyzhanivsky Street, UA-03142 Kyiv (Ukraine)

2016-11-15

X-ray photoelectron core-level and valence-band spectra are measured for pristine and Ar{sup +} ion-bombarded surfaces of LiGaGe{sub 2}Se{sub 6} single crystal grown by Bridgman-Stockbarger technique. Further, electronic structure of LiGaGe{sub 2}Se{sub 6} is elucidated from both theoretical and experimental viewpoints. Density functional theory (DFT) calculations are made using the augmented plane wave +local orbitals (APW+lo) method to study total and partial densities of states in the LiGaGe{sub 2}Se{sub 6} compound. The present calculations indicate that the principal contributors to the valence band are the Se 4p states: they contribute mainly at the top and in the central portion of the valence band of LiGaGe{sub 2}Se{sub 6}, with also their significant contributions in its lower portion. The Ge 4s and Ge 4p states are among other significant contributors to the valence band of LiGaGe{sub 2}Se{sub 6}, contributing mainly at the bottom and in the central portion, respectively. In addition, the calculations indicate that the bottom of the conduction band is composed mainly from the unoccupied Ge s and Se p states. The present DFT calculations are supported experimentally by comparison on a common energy scale of the X-ray emission bands representing the energy distribution of the 4p states associated with Ga, Ge and Se and the XPS valence-band spectrum of the LiGaGe{sub 2}Se{sub 6} single crystal. The main optical characteristics of the LiGaGe{sub 2}Se{sub 6} compound are elucidated by the first-principles calculations.

Synthesis, crystal structure, and transport properties of Fe substituted rhombohedral skutterudite derivatives Co4−xFexGe6Se6

KAUST Repository

Wei, Kaya

2014-11-01

We report on the synthesis and low temperature transport properties of rhombohedral derivatives of the cubic skutterudite CoSb3, namely Co4-xFexGe6Se6 with x = 0, 1, 1.5. Rietveld refinement and elemental analyses were used to identify the structure and stoichiometry of the compositions. The thermal conductivity was investigated by employing the Debye model with different phonon-scattering parameters. This investigation demonstrates that Fe substitution is feasible in these skutterudite derivatives and can significantly affect the transport properties as compared with Co4Ge6Se6. © 2014 Elsevier B.V. All rights reserved.

Synthesis, crystal structure, and transport properties of Fe substituted rhombohedral skutterudite derivatives Co4−xFexGe6Se6

KAUST Repository

Wei, Kaya; Dong, Yongkwan; Puneet, Pooja; Tritt, Terry M.; Nolas, George S.

2014-01-01

We report on the synthesis and low temperature transport properties of rhombohedral derivatives of the cubic skutterudite CoSb3, namely Co4-xFexGe6Se6 with x = 0, 1, 1.5. Rietveld refinement and elemental analyses were used to identify the structure and stoichiometry of the compositions. The thermal conductivity was investigated by employing the Debye model with different phonon-scattering parameters. This investigation demonstrates that Fe substitution is feasible in these skutterudite derivatives and can significantly affect the transport properties as compared with Co4Ge6Se6. © 2014 Elsevier B.V. All rights reserved.

Project planning workshop 6-GeV synchrotron light source: Volume 1

International Nuclear Information System (INIS)

1986-01-01

A model 6 GeV synchrotron light source is described, and the costs, schedule, and manpower associated with producing such a synthrotron light source are summarized. A program consisting of a two-year pre-construction phase, a five-year construction phase, and a three-year post-construction phase and costing a total of $379.6 million is assumed

Measurements of Compton Scattering on the Proton at 2 - 6 GeV

Energy Technology Data Exchange (ETDEWEB)

Danagoulian, Areg [Univ. of Illinois, Urbana-Champaign, IL (United States)

2006-01-01

Similar to elastic electron scattering, Compton Scattering on the proton at high momentum transfers(and high p⊥) can be an effective method to study its short-distance structure. An experiment has been carried out to measure the cross sections for Real Compton Scattering (RCS) on the proton for 2.3-5.7 GeV electron beam energies and a wide distribution of large scattering angles. The 25 kinematic settings sampled a domain of s = 5-11(GeV/c)²,-t = -7(GeV/c)² and -u = 0.5-6.5(GeV/c)². In addition, a measurement of longitudinal and transverse polarization transfer asymmetries was made at a 3.48 GeV beam energy and a scattering angle of θ_cm = 120°. These measurements were performed to test the existing theoretical mechanisms for this process as well as to determine RCS form factors. At the heart of the scientific motivation is the desire to understand the manner in which a nucleon interacts with external excitations at the above listed energies, by comparing and contrasting the two existing models – Leading Twist Mechanism and Soft Overlap “Handbag” Mechanism – and identify the dominant mechanism. Furthermore, the Handbag Mechanism allows one to calculate reaction observables in the framework of Generalized Parton Distributions (GPD), which have the function of bridging the wide gap between the exclusive(form factors) and inclusive(parton distribution functions) description of the proton. The experiment was conducted in Hall A of Thomas Jefferson National Accelerator Facility(Jefferson Lab). It used a polarized and unpolarized electron beam, a 6% copper radiator with the thickness of 6.1% radiation lengths (to produce a bremsstrahlung photon beam), the Hall A liquid hydrogen target, a high resolution spectrometer with a focal plane polarimeter, and a photon hodoscope calorimeter. Results of the differential cross sections are presented, and discussed in the general context of the scientific motivation.

Vertically grown Ge nanowire Schottky diodes on Si and Ge substrates

Science.gov (United States)

Chandra, Nishant; Tracy, Clarence J.; Cho, Jeong-Hyun; Picraux, S. T.; Hathwar, Raghuraj; Goodnick, Stephen M.

2015-07-01

The processing and performance of Schottky diodes formed from arrays of vertical Ge nanowires (NWs) grown on Ge and Si substrates are reported. The goal of this work is to investigate CMOS compatible processes for integrating NWs as components of vertically scaled integrated circuits, and elucidate transport in vertical Schottky NWs. Vertical phosphorus (P) doped Ge NWs were grown using vapor-liquid-solid epitaxy, and nickel (Ni)-Ge Schottky contacts were made to the tops of the NWs. Current-voltage (I-V) characteristics were measured for variable ranges of NW diameters and numbers of nanowires in the arrays, and the I-V characteristics were fit using modified thermionic emission theory to extract the barrier height and ideality factor. As grown NWs did not show rectifying behavior due to the presence of heavy P side-wall doping during growth, resulting in a tunnel contact. After sidewall etching using a dilute peroxide solution, rectifying behavior was obtained. Schottky barrier heights of 0.3-0.4 V and ideality factors close to 2 were extracted using thermionic emission theory, although the model does not give an accurate fit across the whole bias range. Attempts to account for enhanced side-wall conduction due to non-uniform P doping profile during growth through a simple shunt resistance improve the fit, but are still insufficient to provide a good fit. Full three-dimensional numerical modeling using Silvaco Atlas indicates that at least part of this effect is due to the presence of fixed charge and acceptor like traps on the NW surface, which leads to effectively high ideality factors.

Study of nuclei far from stability with AYE-Ball array

International Nuclear Information System (INIS)

Carpenter, M.P.

1996-01-01

The coupling of a Compton-suppressed Ge (CsGe) detector array to a recoil mass separator (RMS) has seen limited use in the past due to the low efficiency for measuring recoil-γ ray coincidences (< 0.1%). With the building of new generation recoil separators and gamma-ray arrays, a substantial increase in detection efficiency has been achieved. This allows for the opportunity to measure excited states in nuclei with cross-sections approaching 100 nb. In this paper, results from the coupling of a modest array of CsGe detectors (AYE-Ball) with a recoil separator (FMA) will be presented

Utilitarianism, reform, and architecture - Edinburgh as exemplar

OpenAIRE

Qing, Feng

2009-01-01

Although the utilitarian character of modern architecture has been widely recognized, the relationship between Utilitarianism and architectural practice has not been adequately discussed. This thesis intends to contribute to this area with a historical study of the interaction of Utilitarianism and architectural practice in the social reforms of 18th and 19th century Britain. Edinburgh is used as an example to illuminate this historical process in more detail. From three ang...

Theoretical designs of 19.6 nm Ne-like Ge XRL source

International Nuclear Information System (INIS)

Zhang Guoping; Zhang Tanxin; Zheng Wudi

2004-01-01

19.6 nm Ne-like Ge X-ray laser (XRL) can be used as a source to diagnose Rayleigh-Taylor instability in laser induced plasma. In this paper, systemic optimum designs and theoretical analysis to Ne-like Ge XRL driven by pre-main short pulses were conducted by a series of codes, which had been tested by experiments. Simulation results show that, adopting driven conditions of 2%-3% pre-pulse, 6-8 ns pre-main pulse interval and 40 TW/cm 2 power intensity, a gain area of 19.6 nm laser line beyond 60 μm and gain duration of 90 ps can be obtained. Furthermore, with 16 mm plane target, the gain gets to 11.8/cm, and if 6 mrad/cm curved target is adopted, it reaches to 13.3/cm, and small signal gain-length product of single target is about 21.3, which means that saturated gain can be realized by a single target. With double targets opposite coupling, gain-length product can reach 38.4, deep saturation can be gotten, and XRL source required by demonstration of application is out of question

Ge 3P 6Si 2O 25: A cage structure closely related to the intersecting tunnel structure KMo 3P 6Si 2O 25

Science.gov (United States)

Leclaire, A.; Raveau, B.

1988-08-01

A germanosilicophosphate Ge 3P 6Si 2O 25 has been isolated. Its structure was solved from a single-crystal study in the space group P overline31c . Its cell parameters are a = b = 7.994(1) Å, c = 16.513(2) Å, Z = 2. The refinement by full-matrix least-squares calculations leads to R = 0.043 with 686 independent reflections. The structure of this oxide is built up from corner-sharing PO 4 and SiO 4 tetrahedra and GeO 6 octahedra. One observes a feature common to several silicophosphates: the presence of the structural unit P 6Si 2O 25 built up from a disilicate group sharing its corners with six PO 4 tetrahedra. The structural relationships between this oxide and the silicophosphates AMo 3P 6Si 2O 25 and Si 3P 6Si 2O 25 (or Ge 3P 6 Ge 2O 25) are described.

Measurements of spin parameters in p-p elastic scattering at 6 GeV/c

International Nuclear Information System (INIS)

Linn, S.L.; Perlmutter, A.; Crosbie, E.A.; Ratner, L.G.; Schultz, P.F.; O'Fallon, J.R.; Cameron, P.R.; Crabb, D.G.; Fernow, R.C.; Hansen, P.H.; Krisch, A.D.; Salthouse, A.J.; Sandler, B.; Shima, T.; Terwilliger, K.M.

1982-01-01

We measured the differential cross section for proton-proton elastic scattering in 6 GeV/c, with both initial spins oriented normal to the scattering plane. The analyzing power A shows significant structure with a large broad peak reaching about 24% near P/sub perpendicular/ 2 = 1.6 (GeV/c) 2 . The spin-spin correlation parameter A/sub n/n exhibits more dramatic structure, with a small but very sharp peak rising rapidly to about 13% at 90 0 /sub tsc.m./. This sharp peak may be caused by particle-identity effects

Charged multiplicity distributions in anti np interactions at 6 GeV/c

International Nuclear Information System (INIS)

Batyunya, B.V.; Boguslavskij, I.B.; Gramenitskij, I.M.

1980-01-01

Inelastic topological anti np cross sections at 6 GeV/c have been determined based on a study of the charged multiplicity distribution in antideuteron-proton collisions at 12 GeV/c. The data were obtained in an exposure of the ''Ludmila'' JINR 2 m hydrogen bubble chamber at the Serpukhov accelerator. In anti np interactions average charged multiplicity and its ratio to dispersion, /D, were found to be 3.32+-0.13 and 1.86+-0.16, respectively. Comparison with anti pn, anti pp and pp data was made

76 FR 68634 - Airworthiness Directives; General Electric Company (GE) CF6 Turbofan Engines

Science.gov (United States)

2011-11-07

... Airworthiness Directives; General Electric Company (GE) CF6 Turbofan Engines AGENCY: Federal Aviation... ``(c) This AD applies to * * * and CF6-80A3 turbofan engines with left-hand links * * *.'' to ``(c) This AD applies to * * * and CF6-80A3 turbofan engines, including engines marked on the engine data...

A brief look at the history of the Deaconess Hospital, Edinburgh, 1894-1990.

Science.gov (United States)

McNeill, E R; Wright, D; Demetriades, A K

2018-03-01

The Deaconess Hospital, Edinburgh, opened in 1894 and was the first establishment of its kind in the UK, maintained and wholly funded as it was by the Reformed Church. Through its 96-year lifetime it changed and evolved to time and circumstance. It was a school: for the training of nurses and deaconesses who took their practical skills all over the world. It was a sanctum: for the sick-poor before the NHS. It was a subsidiary: for the bigger hospitals of Edinburgh after amalgamation into the NHS. It was a specialised centre: as the Urology Department in Edinburgh and the Scottish Lithotripter centre. And now it is currently student accommodation. There is no single source to account for its history. Through the use of original material made available by the Lothian Health Services Archives - including Church of Scotland publications, patient records, a doctor's casebook and annual reports - we review its conception, purpose, development and running; its fate on joining the NHS, its identity in the latter years and finally its closure.

Synthesis and properties of Rb2GeF6:Mn4+ red-emitting phosphors

Science.gov (United States)

Sakurai, Shono; Nakamura, Toshihiro; Adachi, Sadao

2018-02-01

Rb2GeF6:Mn4+ red-emitting phosphors were synthesized by coprecipitation and their structural and optical properties were investigated by laser microscopy observation, X-ray diffraction (XRD) analysis, photoluminescence (PL) analysis, PL excitation (PLE) spectroscopy, and PL decay measurement. Single-crystalline ingots in the form of a hexagonal pyramid were prepared with a basal plane diameter of ˜2 mm. The XRD analysis suggested that Rb2GeF6 crystallizes in the hexagonal structure (C6v4 = P63mc) with a = 0.5955 nm and c = 0.9672 nm. The phosphor exhibited the strong Mn4+-related zero-phonon line (ZPL) emission peak typically observed in host crystals with piezoelectrically active lattices such as a hexagonal lattice. The quantum efficiencies of the bulk ingot and powdered samples were 87 and 74%, respectively, with nearly the same luminescence decay time of ˜6 ms. The exact ZPL energies and related crystal-field and Racah parameters were obtained from the PL and PLE spectra by Franck-Condon analysis. Temperature-dependent PL intensities were analyzed from T = 20 to 500 K using a thermal quenching model by considering Bose-Einstein phonon statistics. A comparative discussion on the phosphor properties of Rb2GeF6:Mn4+ and Rb2MF6:Mn4+ with M = Si and Ti was also given.

Signatures of triaxiality in low-spin spectra of 86Ge

Science.gov (United States)

Lettmann, M.; Werner, V.; Pietralla, N.; Doornenbal, P.; Obertelli, A.; Rodríguez, T. R.; Sieja, K.; Authelet, G.; Baba, H.; Calvet, D.; Château, F.; Chen, S.; Corsi, A.; Delbart, A.; Gheller, J.-M.; Giganon, A.; Gillibert, A.; Lapoux, V.; Motobayashi, T.; Niikura, M.; Paul, N.; Roussé, J.-Y.; Sakurai, H.; Santamaria, C.; Steppenbeck, D.; Taniuchi, R.; Uesaka, T.; Ando, T.; Arici, T.; Blazhev, A.; Browne, F.; Bruce, A.; Caroll, R. J.; Chung, L. X.; Cortés, M. L.; Dewald, M.; Ding, B.; Flavigny, F.; Franchoo, S.; Górska, M.; Gottardo, A.; Jungclaus, A.; Lee, J.; Linh, B. D.; Liu, J.; Liu, Z.; Lizarazo, C.; Momiyama, S.; Moschner, K.; Nagamine, S.; Nakatsuka, N.; Nita, C.; Nobs, C. R.; Olivier, L.; Patel, Z.; Podolyák, Zs.; Rudigier, M.; Saito, T.; Shand, C.; Söderström, P.-A.; Stefan, I.; Vaquero, V.; Wimmer, K.; Xu, Z.

2018-05-01

Low-spin states of neutron-rich 84,86,88Ge were measured by in-flight γ-ray spectroscopy at 270 MeV/u at the RIKEN-RIBF facility. The exotic beams have been produced by primary 238U in-flight fission reactions and impinged on the MINOS device. MINOS combines a 10-cm long LH2 target with a Time Projection Chamber (TPC) to reconstruct the reaction vertices. The reactions were selected by the BigRIPS and the ZeroDegree spectrometers for the incoming and outgoing channels, respectively. Emitted γ radiation was detected by the NaI-array DALI2. De-excitations from the {6}1+, {4}1,2+, and {2}1,2+ states of 84,86Ge and {4}1+ and {2}1,2+ states of 88Ge were observed. The data are compared to state-of-the-art shell model and beyond-mean-field calculations. Furthermore, a candidate for a {3}1+ state of 86Ge was identified. This state plays a key role in the discussion of ground-state triaxiality of 86Ge, along with other features of the low-energy level scheme. This work was published in [1].

[Fifty years of the Polish School of Medicine at the University of Edinburgh (1941-1991)].

Science.gov (United States)

Tomaszewski, W

1994-01-01

The Polish School of Medicine at the University of Edinburgh started in 1941 on the initiative of the University. It was destined for soldier-students in the Polish Forces in Great Britain. This academic institution, unique in the history of universities, was a joint Scottish-Polish enterprise. An Agreement was concluded between the Polish Government in London and the University of Edinburgh. The School was an independent Polish academic institution and, at the same time, an integral part of the University of Edinburgh. The students matriculated at the University. The University provided all the laboratory and clinical facilities necessary for teaching. Due to a lack of Polish professors for some chairs a few of them were held by Scottish professors. Attached to them were Polish lecturers but the examinations were then held in English. The diploma, originally valid only in Poland, became recognised in Great Britain following an Act of Parliament in 1947. There were 337 students, a number of them women. 227 obtained the degree M.B., Ch.B. The war ended in 1945. The School continued up till 1949. Poland was not free. The Nazi occupation of Poland was replaced by Soviet domination which was to last for over 40 years. Only 22 of the graduates returned home, about 100 settled in G. Britain, another 100 dispersed world wide. The "magnanimous gesture" of the University of Edinburgh was thereafter remembered with gratitude by the members of the Polish School. In 1961, on the occasion of the 20th anniversary of the School, the first reunion of the graduates was organised in Birmingham for those settled in Gr. Britain. The success of the reunion prompted decision on organising annual "English" gatherings of the Polish graduates in Gr. Britain. The first world reunion of the graduates took place in Edinburgh in 1966, attracting a large number of participants on this occasion of the 25th anniversary of the School. That immensely successful anniversary of the Polish School

Fabrication of Metal Nanoparticle Arrays in the ZrO2(Y, HfO2(Y, and GeOx Films by Magnetron Sputtering

Directory of Open Access Journals (Sweden)

Oleg Gorshkov

2017-01-01

Full Text Available The single sheet arrays of Au nanoparticles (NPs embedded into the ZrO2(Y, HfO2(Y, and GeOx (x≈2 films have been fabricated by the alternating deposition of the nanometer-thick dielectric and metal films using Magnetron Sputtering followed by annealing. The structure and optical properties of the NP arrays have been studied, subject to the fabrication technology parameters. The possibility of fabricating dense single sheet Au NP arrays in the matrices listed above with controlled NP sizes (within 1 to 3 nm and surface density has been demonstrated. A red shift of the plasmonic optical absorption peak in the optical transmission spectra of the nanocomposite films (in the wavelength band of 500 to 650 nm has been observed. The effect was attributed to the excitation of the collective surface plasmon-polaritons in the dense Au NP arrays. The nanocomposite films fabricated in the present study can find various applications in nanoelectronics (e.g., single electronics, nonvolatile memory devices, integrated optics, and plasmonics.

Array capabilities and future arrays

International Nuclear Information System (INIS)

Radford, D.

1993-01-01

Early results from the new third-generation instruments GAMMASPHERE and EUROGAM are confirming the expectation that such arrays will have a revolutionary effect on the field of high-spin nuclear structure. When completed, GAMMASHPERE will have a resolving power am order of magnitude greater that of the best second-generation arrays. When combined with other instruments such as particle-detector arrays and fragment mass analysers, the capabilites of the arrays for the study of more exotic nuclei will be further enhanced. In order to better understand the limitations of these instruments, and to design improved future detector systems, it is important to have some intelligible and reliable calculation for the relative resolving power of different instrument designs. The derivation of such a figure of merit will be briefly presented, and the relative sensitivities of arrays currently proposed or under construction presented. The design of TRIGAM, a new third-generation array proposed for Chalk River, will also be discussed. It is instructive to consider how far arrays of Compton-suppressed Ge detectors could be taken. For example, it will be shown that an idealised open-quote perfectclose quotes third-generation array of 1000 detectors has a sensitivity an order of magnitude higher again than that of GAMMASPHERE. Less conventional options for new arrays will also be explored

Results on neutrinoless double beta decay of 76Ge from GERDA Phase I

Science.gov (United States)

Palioselitis, Dimitrios; GERDA Collaboration

2015-05-01

The Germanium Detector Array (GERDA) experiment is searching for the neutrinoless double beta (0νββ) decay of 76Ge by operating bare germanium diodes in liquid argon. GERDA is located at the Gran Sasso National Laboratory (LNGS) in Italy. During Phase I, a total exposure of 21.6 kg yrand a background index of 0.01 cts/(keVkg yr) were reached. No signal was observed and a lower limit of T0ν1/2 > 2.1 · 1025 yr(90% C.L.) is derived for the half life of the 0νββ decay of 76Ge.

Results on neutrinoless double beta decay of 76Ge from the GERDA experiment

Science.gov (United States)

Palioselitis, Dimitrios

2015-05-01

The Germanium Detector Array (GERDA) experiment is searching for neutrinoless double beta (0νββ) decay of 76Ge, a lepton number violating nuclear process predicted by extensions of the Standard Model. GERDA is an array of bare germanium diodes immersed in liquid argon located at the Gran Sasso National Laboratory (LNGS) in Italy. The results of the GERDA Phase I data taking with a total exposure of 21.6 kg yr and a background index of 0.01 cts/(keV kg yr) are presented in this paper. No signal was observed and a lower limit of T1/20ν > 2.1×1025 yr (90% C.L.) was derived for the half-life of the 0νββ decay of 76Ge. Phase II of the experiment aims to reduce the background around the region of interest by a factor of ten.

Experimental study of spallation: neutron angular distributions induced by protons (0.8.,1.2 et 1.6 GeV) and deuterons (0.8 et 1.6 GeV) beams

International Nuclear Information System (INIS)

Borne, F.

1998-01-01

Angular distributions of spallation neutrons, produced by 0,8 to 1,6 GeV protons and 0,8 to 1,6 GeV deuterons, with two experimental and complementary techniques: the flight time measure and the use of a liquid hydrogen converter associated with a magnetic spectrometer of higher energy (2000 MeV). Experimental results obtained at Saturne (Cea) are analysed and interpreted. They allowed the determination of the neutrons production behaviour on thin targets (Al, Fe, Zr, W, Pb and Th) in function of the angle emission and the atomic number of the target and to compare the variation of neutrons production, coming from protons and incident deuterons of same total energy on a Pb target. Experimental results are compared with simulation results obtained with the TIERCE code, including Bertini and Cugnon intra-nuclear cascades. (A.L.B.)

Fission and fragmentation of silver and bromine nuclei by 1-6 GeV energy photons

International Nuclear Information System (INIS)

Pinheiro Filho, J. de D.

1983-01-01

Fission and fragmentation of silver and bromine nuclei induced by bremsstrahlung photons in the maximum energy range of 1-6 GeV are studied. A special technique of nuclear emulsion for the highly ionizing nuclear fragment detection is used in the discrimination between nuclear fission and fragmentation events. Films of Ilford-KO nuclear emulsion (approximatelly 10 20 atoms/cm 2 of Ag, Br) which had been exposed to bremsstrahlung beams in 'Deutsches Elektronen Synchrotron' (DESY, Hamburg) with total doses of approximatelly 10 11 equivalent photons are used. Through a detailed analysis of range, angular and angle between fragment distributions, and empirical relations which permit to estimate nuclear fragment energy, range and velocity, the discrimination between fission and fragmentation events is made. Results related to fragment range distribution, angular distribution, distribution of angle between fragments, distribution of ratio between ranges, velocity distributions, forward/backward ratio, fission and fragmentation cross sections, nuclear fissionability and ternary fission frequency are presented and discussed. The results show that the mean photofragmentation cross section in the internal 1-6 GeV (0,09+-0,02mb) is significant when compared to the photofission (0,29+-0,05mb). It is also shown that the mean photofission cross section between 1 and 6 GeV is great by a factor of approximatelly 10 when compared to the foreseen by the cascade-evaporation nuclear model for monoenergetic photons of 0,6 GeV. (L.C.) [pt

Flood-inundation maps for the Driftwood River and Sugar Creek near Edinburgh, Indiana

Science.gov (United States)

Fowler, Kathleen K.; Kim, Moon H.; Menke, Chad D.

2012-01-01

Digital flood-inundation maps for an 11.2 mile reach of the Driftwood River and a 5.2 mile reach of Sugar Creek, both near Edinburgh, Indiana, were created by the U.S. Geological Survey (USGS) in cooperation with the Camp Atterbury Joint Maneuver Training Center, Edinburgh, Indiana. The inundation maps, which can be accessed through the USGS Flood Inundation Mapping Science Web site at http://water.usgs.gov/osw/flood_inundation/, depict estimates of the areal extent of flooding corresponding to selected water levels (stages) at the USGS streamgage 03363000 Driftwood River near Edinburgh, Ind. Current conditions at the USGS streamgage in Indiana may be obtained on the Internet at http://waterdata.usgs.gov/in/nwis/current/?type=flow. In addition, the information has been provided to the National Weather Service (NWS) for incorporation into their Advanced Hydrologic Prediction Service (AHPS) flood warning system at http://water.weather.gov/ahps/. The NWS forecasts flood hydrographs at many places that are often collocated at USGS streamgages. That forecasted peak-stage information, also available on the Internet, may be used in conjunction with the maps developed in this study to show predicted areas of flood inundation. For this study, flood profiles were computed for the stream reaches by means of a one-dimensional step-backwater model. The model was calibrated using the most current stage-discharge relations at the USGS streamgage 03363000 Driftwood River near Edinburgh, Ind. The hydraulic model was then used to determine elevations throughout the study reaches for nine water-surface profiles for flood stages at 1-ft intervals referenced to the streamgage datum and ranging from bankfull to nearly the highest recorded water level at the USGS streamgage 03363000 Driftwood River near Edinburgh, Ind. The simulated water-surface profiles were then combined with a geospatial digital elevation model (derived from Light Detection and Ranging (LiDAR) data) in order to

Pulsed ion-beam induced nucleation and growth of Ge nanocrystals on SiO2

International Nuclear Information System (INIS)

Stepina, N. P.; Dvurechenskii, A. V.; Armbrister, V. A.; Kesler, V. G.; Novikov, P. L.; Gutakovskii, A. K.; Kirienko, V. V.; Smagina, Zh. V.; Groetzschel, R.

2007-01-01

Pulsed low-energy (200 eV) ion-beam induced nucleation during Ge deposition on thin SiO 2 film was used to form dense homogeneous arrays of Ge nanocrystals. The ion-beam action is shown to stimulate the nucleation of Ge nanocrystals when being applied after thin Ge layer deposition. Temperature and flux variation was used to optimize the nanocrystal size and array density required for memory device. Kinetic Monte Carlo simulation shows that ion impacts open an additional channel of atom displacement from a nanocrystal onto SiO 2 surface. This results both in a decrease in the average nanocrystal size and in an increase in nanocrystal density

validation of the edinburgh postnatal depression scale on a cohort of ...

African Journals Online (AJOL)

Edinburgh Posmatal Depression Scale (EPDS) is a ID-item self-report scale designed ... been denied accessible health care in the past, it is not surprising that .... translated, if necessary, by one of two multilingual nursing sisters experienced in ...

Pulsed ion-beam assisted deposition of Ge nanocrystals on SiO2 for non-volatile memory device

International Nuclear Information System (INIS)

Stepina, N.P.; Dvurechenskii, A.V.; Armbrister, V.A.; Kirienko, V.V.; Novikov, P.L.; Kesler, V.G.; Gutakovskii, A.K.; Smagina, Z.V.; Spesivtzev, E.V.

2008-01-01

A floating gate memory structure, utilizing Ge nanocrystals (NCs) deposited on tunnel SiO 2 , have been fabricated using pulsed low energy ion-beam induced molecular-beam deposition (MBD) in ultra-high vacuum. The ion-beam action is shown to stimulate the nucleation of Ge NCs when being applied after thin Ge layer deposition. Growth conditions for independent change of NCs size and array density were established allowing to optimize the structure parameters required for memory device. Activation energy E = 0.25 eV was determined from the temperature dependence of NCs array density. Monte Carlo simulation has shown that the process, determining NCs array density, is the surface diffusion. Embedding of the crystalline Ge dots into silicon oxide was carried out by selective oxidation of Si(100)/SiO 2 /Ge(NCs)/poly-Si structure. MOS-capacitor obtained after oxidation showed a hysteresis in its C-V curves attributed to charge retention in the Ge dots

Wire Array Photovoltaics

Science.gov (United States)

Turner-Evans, Dan

Over the past five years, the cost of solar panels has dropped drastically and, in concert, the number of installed modules has risen exponentially. However, solar electricity is still more than twice as expensive as electricity from a natural gas plant. Fortunately, wire array solar cells have emerged as a promising technology for further lowering the cost of solar. Si wire array solar cells are formed with a unique, low cost growth method and use 100 times less material than conventional Si cells. The wires can be embedded in a transparent, flexible polymer to create a free-standing array that can be rolled up for easy installation in a variety of form factors. Furthermore, by incorporating multijunctions into the wire morphology, higher efficiencies can be achieved while taking advantage of the unique defect relaxation pathways afforded by the 3D wire geometry. The work in this thesis shepherded Si wires from undoped arrays to flexible, functional large area devices and laid the groundwork for multijunction wire array cells. Fabrication techniques were developed to turn intrinsic Si wires into full p-n junctions and the wires were passivated with a-Si:H and a-SiNx:H. Single wire devices yielded open circuit voltages of 600 mV and efficiencies of 9%. The arrays were then embedded in a polymer and contacted with a transparent, flexible, Ni nanoparticle and Ag nanowire top contact. The contact connected >99% of the wires in parallel and yielded flexible, substrate free solar cells featuring hundreds of thousands of wires. Building on the success of the Si wire arrays, GaP was epitaxially grown on the material to create heterostructures for photoelectrochemistry. These cells were limited by low absorption in the GaP due to its indirect bandgap, and poor current collection due to a diffusion length of only 80 nm. However, GaAsP on SiGe offers a superior combination of materials, and wire architectures based on these semiconductors were investigated for multijunction

Probing Proton Spin Structure: A Measurement of g₂ at Four-momentum Transfer of 2 to 6 GeV²

Energy Technology Data Exchange (ETDEWEB)

Maxwell, James [Univ. of Virginia, Charlottesville, VA (United States); Thomas Jefferson National Accelerator Facility (TJNAF), Newport News, VA (United States)

2011-12-01

The Spin Asymmetries of the Nucleon Experiment investigated the spin structure of the proton via inclusive electron scattering at the Continuous Electron Beam Accelerator Facility at Jefferson Laboratory in Newport News, VA. A double-polarization measurement of polarized asymmetries was performed using the University of Virginia solid polarized ammonia target with target polarization aligned longitudinal and near transverse to the electron beam, allowing the extraction of the spin asymmetries A₁ and A₂, and spin structure functions g₁ and g₂. Polarized electrons of energies of 4.7 and 5.9 GeV were scattered to be viewed by a novel, non-magnetic array of detectors observing a four-momentum transfer range of 2 to 6 GeV². This document addresses the extraction of the spin asymmetries and spin structure functions, with a focus on spin structure function g₂, which we have measured as a function of x and W in four Q² bins.

The Edinburgh approach to urban heritage : why a buffer zone?

NARCIS (Netherlands)

Bennink, R.H.J.; van Niel, W.; Veldpaus, L.; Pereira Roders, A.R.

2013-01-01

The architectural ensemble of Old and New Towns of Edinburgh, UNESCO World Heritage since 1995, is among the sites affected by urban development. The absence of a buffer zone is assumed to be one of the causes of the impact and the recently adopted Historic Urban Landscape approach aims to assist on

Validation of the Edinburgh Postnatal Depression Scale on a cohort ...

African Journals Online (AJOL)

Posmatal depression occurs in 10 - 15% of women. The Edinburgh Postnatal Depression Scale (EPDS) is a ID-item self-report scale designed specifically as a screening instrument for the postnatal period. It was initially validated for use in the UK, but has subsequently been validated for other communities. It has not been ...

Results on neutrinoless double beta decay of 76Ge from GERDA Phase I

International Nuclear Information System (INIS)

Palioselitis, Dimitrios

2015-01-01

The Germanium Detector Array (GERDA) experiment is searching for the neutrinoless double beta (0νββ) decay of 76 Ge by operating bare germanium diodes in liquid argon. GERDA is located at the Gran Sasso National Laboratory (LNGS) in Italy. During Phase I, a total exposure of 21.6 kg yrand a background index of 0.01 cts/(keVkg yr) were reached. No signal was observed and a lower limit of T 0ν 1/2 > 2.1 · 10 25 yr(90% C.L.) is derived for the half life of the 0νββ decay of 76 Ge. (paper)

Cross sections of neutron production with energies of 7,5-190 MeV in the p+A → n+X reaction at 1-9 GeV/c, π++A → n+X reaction at 1-6 GeV/c, π-+A → n+X reaction at 1,4 and 5 GeV/c

International Nuclear Information System (INIS)

Bayukov, Yu.D.; Gavrilov, V.B.; Goryainov, N.A.

1983-01-01

The tables of cross sections of neutron production with energies 7.5-190 MeV for reactions p+A→n+X at 1-9 GeV/c, π + +A→n+X at 1-6 GeV/c and π - +A→n+X at 1.4 and 5 GeV/c are presented. A-dependence (for Be, C, Al, Ti, Fe, Cu, Nb, Cd, Sn, Ta, Pb and U targets) for incident 7.5 GeV/c protons and dependence on incident particle momentum (for protons at 1, 1.4, 2, 3, 5, 6, 6.25, 6.5, 7, 7.5, 8.25, 8.5 and 9 GeV/c, for π + -mesons at 1, 1.4, 2, 3, 4, 5 and 6 GeV/c, π - -mesons at 1,4 and 5 GeV/c) for C, Cu, Pb, U targets are measured in detail, for secondary neutrons at 119 deg. Detailed angular dependences in the range from 10 deg to 160 deg are presented for C, Cu, Pb, U targets for incident 7.5 GeV/c protons and 5 GeV/c π - -mesons. Some of typical dependences are illustrated by diagrams

New quaternary indides RE{sub 7}Ni{sub 5-x}Ge{sub 3+x}In{sub 6} (RE = La, Nd, Sm)

Energy Technology Data Exchange (ETDEWEB)

Dominyuk, Nataliya [Lviv Univ. (Ukraine). Dept. of Inorganic Chemistry; Muenster Univ. (Germany). Inst. fuer Anorganische und Analytische Chemie; Zaremba, Vasyl I. [Lviv Univ. (Ukraine). Dept. of Inorganic Chemistry; Poettgen, Rainer [Muenster Univ. (Germany). Inst. fuer Anorganische und Analytische Chemie

2011-04-15

The quaternary indides RE{sub 7}Ni{sub 5-x}Ge{sub 3+x}In{sub 6} (RE = La,Nd, Sm) were synthesized from the elements by arc-melting. Single crystals were grown by slow cooling of the polycrystalline samples. The structures were characterized by powder and single-crystal X-ray diffraction: Ce{sub 7}Ni{sub 4.73}Ge{sub 3.27}In{sub 6} type, P6/m, Z = 1, a = 1147.05(9), c = 426.82(4) pm, wR2 = 0.0652, 528 F{sup 2} values for La{sub 7}Ni{sub 4.46}Ge{sub 3.54}In{sub 6}, a = 1134.5(7), c = 407.1(7) pm, wR2 = 0.0419, 441 F{sup 2} values for Nd{sub 7}Ni{sub 4.91}Ge{sub 3.09}In{sub 6}, and a = 1133.5(2), c = 404.3(1) pm, wR2 = 0.0619, 498 F{sup 2} values for Sm{sub 7}Ni{sub 4.31}Ge{sub 3.69}In{sub 6}, with 25 parameters per refinement. Characteristic features of the RE{sub 7}Ni{sub 5-x}Ge{sub 3+x}In{sub 6} structures are hexagonal, AlB{sub 2}-related prisms around the RE1 atoms and a tricapped, trigonalprismatic coordination of the nickel atoms. (orig.)

Pulsed ion-beam assisted deposition of Ge nanocrystals on SiO{sub 2} for non-volatile memory device

Energy Technology Data Exchange (ETDEWEB)

Stepina, N.P. [Institute of Semiconductor Physics, Lavrenteva 13, 630090 Novosibirsk (Russian Federation)], E-mail: nstepina@mail.ru; Dvurechenskii, A.V.; Armbrister, V.A.; Kirienko, V.V.; Novikov, P.L.; Kesler, V.G.; Gutakovskii, A.K.; Smagina, Z.V.; Spesivtzev, E.V. [Institute of Semiconductor Physics, Lavrenteva 13, 630090 Novosibirsk (Russian Federation)

2008-11-03

A floating gate memory structure, utilizing Ge nanocrystals (NCs) deposited on tunnel SiO{sub 2}, have been fabricated using pulsed low energy ion-beam induced molecular-beam deposition (MBD) in ultra-high vacuum. The ion-beam action is shown to stimulate the nucleation of Ge NCs when being applied after thin Ge layer deposition. Growth conditions for independent change of NCs size and array density were established allowing to optimize the structure parameters required for memory device. Activation energy E = 0.25 eV was determined from the temperature dependence of NCs array density. Monte Carlo simulation has shown that the process, determining NCs array density, is the surface diffusion. Embedding of the crystalline Ge dots into silicon oxide was carried out by selective oxidation of Si(100)/SiO{sub 2} /Ge(NCs)/poly-Si structure. MOS-capacitor obtained after oxidation showed a hysteresis in its C-V curves attributed to charge retention in the Ge dots.

Edinburgh, the Scottish pioneers of anatomy and their lasting influence in South Africa.

Science.gov (United States)

Correia, J C; Wessels, Q; Vorster, W

2013-11-01

The history of the origin of anatomy education in South Africa is the history of an arduous journey through time. The lasting influence of Edinburgh came in the form of Robert Black Thomson. He was a student and assistant of Sir William Turner who gave rise to the first chair of anatomy and the establishment of a department at the South African College, known today as University of Cape Town. Thomson was later succeeded by Matthew Drennan, a keen anthropologist, who was revered by his students. This Scottish link prevailed over time with the appointment of Edward Philip Stibbe as the chair of anatomy at the South African School of Mines and Technology, which later became the University of the Witwatersrand. Stibbe's successor, Raymond Arthur Dart, a graduate of the University of Sydney, was trained in an anatomy department sculpted on that of Edinburgh by Professor James Thomas Wilson. Wilson's influence at the University of Sydney can be traced back to Edinburgh and William Turner through Thomas Anderson Stuart. Both Dart and Robert Broom, another Scot, were considered as Africa's wild men by the late Professor Tobias. Here, the authors explore the Scottish link and origins of anatomy pedagogy in South Africa.

Study for a 6 GeV undulator based synchrotron radiation source

International Nuclear Information System (INIS)

Vignola, G.; Barton, M.; Blumberg, R.; Galayda, J.; Krinsky, S.; Luccio, A.; Pellegrini, C.; van Steenbergen, A.; Wang, J.

1985-01-01

A partial study for a 6 GeV undulator based synchrotron radiation source for production of high brightness undulator radiation, in the A region, is presented. The basic lattice adopted for the storage ring is a hybrid FODO Chasman-Green lattice, making use of gradient in the dipoles. We discuss also the e beam current limits and the injection parameters

Stress-directed compositional patterning of SiGe substrates for lateral quantum barrier manipulation

International Nuclear Information System (INIS)

Ghosh, Swapnadip; Kaiser, Daniel; Sinno, Talid; Bonilla, Jose; Han, Sang M.

2015-01-01

While vertical stacking of quantum well and dot structures is well established in heteroepitaxial semiconductor materials, manipulation of quantum barriers in the lateral directions poses a significant engineering challenge. Here, we demonstrate lateral quantum barrier manipulation in a crystalline SiGe alloy using structured mechanical fields to drive compositional redistribution. To apply stress, we make use of a nano-indenter array that is pressed against a Si 0.8 Ge 0.2 wafer in a custom-made mechanical press. The entire assembly is then annealed at high temperatures, during which the larger Ge atoms are selectively driven away from areas of compressive stress. Compositional analysis of the SiGe substrates reveals that this approach leads to a transfer of the indenter array pattern to the near-surface elemental composition, resulting in near 100% Si regions underneath each indenter that are separated from each other by the surrounding Si 0.8 Ge 0.2 bulk. The “stress transfer” process is studied in detail using multiscale computer simulations that demonstrate its robustness across a wide range of applied stresses and annealing temperatures. While the “Si nanodot” structures formed here are not intrinsically useful as quantum structures, it is anticipated that the stress transfer process may be modified by judicious control of the SiGe film thickness and indenter array pattern to form more technologically useful structures

Coulomb-nuclear interference with 6Li: Isospin character of the 21+ excitation in 70,72,74Ge

International Nuclear Information System (INIS)

Barbosa, M.D.L.; Borello-Lewin, T.; Horodynski-Matsushigue, L.B.; Duarte, J.L.M.; Rodrigues, C.L.; Rodrigues, M.R.D.; Ukita, G.M.

2005-01-01

Ratios of B(E2) to B(IS2), that is, of the reduced quadrupole transition probabilities related, respectively, to charge and mass were extracted through Coulomb-nuclear interference (CNI) for the excitation of the 2 1 + states in 70,72,74 Ge, with a relative accuracy of less than 4%. For this purpose, the CNI angular distributions associated with the inelastic scattering of 28-MeV incident 6 Li ions accelerated by the Sao Paulo Pelletron, and momentum analyzed by the Enge magnetic spectrograph were interpreted within the DWBA-DOMP approach (distorted wave approximation for the scattering process and deformed optical model for the structure representation) with global 6 Li optical parameters. The present CNI results demonstrate an abrupt change in the B(E2)/B(IS2) ratio for 74 Ge: although for 70,72 Ge, values of the order of 1.0 or slightly higher were obtained, this ratio is 0.66 (7) for 74 Ge. The heavier Ge isotope is thus one of the few nuclei that, so far, have been shown to present clear mixed symmetry components in their ground-state band

Density-driven structural transformations in network forming glasses: a high-pressure neutron diffraction study of GeO2 glass up to 17.5 GPa

International Nuclear Information System (INIS)

Salmon, Philip S; Drewitt, James W E; Whittaker, Dean A J; Zeidler, Anita; Wezka, Kamil; Bull, Craig L; Tucker, Matthew G; Wilding, Martin C; Guthrie, Malcolm; Marrocchelli, Dario

2012-01-01

The structure of GeO 2 glass was investigated at pressures up to 17.5(5) GPa using in situ time-of-flight neutron diffraction with a Paris-Edinburgh press employing sintered diamond anvils. A new methodology and data correction procedure were developed, enabling a reliable measurement of structure factors that are largely free from diamond Bragg peaks. Calibration curves, which are important for neutron diffraction work on disordered materials, were constructed for pressure as a function of applied load for both single and double toroid anvil geometries. The diffraction data are compared to new molecular-dynamics simulations made using transferrable interaction potentials that include dipole-polarization effects. The results, when taken together with those from other experimental methods, are consistent with four densification mechanisms. The first, at pressures up to ≃ 5 GPa, is associated with a reorganization of GeO 4 units. The second, extending over the range from ≃ 5 to 10 GPa, corresponds to a regime where GeO 4 units are replaced predominantly by GeO 5 units. In the third, as the pressure increases beyond ∼10 GPa, appreciable concentrations of GeO 6 units begin to form and there is a decrease in the rate of change of the intermediate-range order as measured by the pressure dependence of the position of the first sharp diffraction peak. In the fourth, at about 30 GPa, the transformation to a predominantly octahedral glass is achieved and further densification proceeds via compression of the Ge-O bonds. The observed changes in the measured diffraction patterns for GeO 2 occur at similar dimensionless number densities to those found for SiO 2 , indicating similar densification mechanisms for both glasses. This implies a regime from about 15 to 24 GPa where SiO 4 units are replaced predominantly by SiO 5 units, and a regime beyond ∼24 GPa where appreciable concentrations of SiO 6 units begin to form.

Redefining the Poet as Healer: Valerie Gillies's Collaborative Role in the Edinburgh Marie Curie Hospice Quiet Room Project.

Science.gov (United States)

Severin, Laura

2015-01-01

This article examines the poetic contribution of Valerie Gillies, Edinburgh Makar (or poet of the city) from 2005-2008, to the Edinburgh Marie Curie Hospice Quiet Room, a new contemplation space for patients, families, and staff. In collaboration with others, Gillies created a transitional space for the Quiet Room, centered on the display of her sonnet, "A Place Apart." This space functions to comfort visitors to the Quiet Room by relocating them in their surroundings and offering the solace provided by nature and history. With this project, her first as Edinburgh Makar, Gillies redefines the role of the poet as healer and advocates for newer forms of palliative care that focus on patients' spiritual and emotional, as well as physical, wellbeing.

Interim assessment of the experience of fast neutron therapy in Edinburgh

International Nuclear Information System (INIS)

Duncan, W.; Arnott, S.J.

1982-01-01

Clinical studies of fast neutron therapy were started in Edinburgh in March 1977. The treatment facility has an isocentric machine and a fixed horizontal beam. The neutron beam is produced by 15 MeV deuterons on a thick beryllium target. Six hundred and forty-one patients have been included in these studies in the four-year period to March 1981. Randomly controlled trials have been conducted since May 1977 and 376 patients have been recruited in this period. The local tumor response rates and morbidity observed is given for trials of patients with cerebral gliomass, squamous carcinoma of the head and neck region, transitional cell carcinoma of the bladder and adenocarcinoma of the rectum. This interim evaluation does not demonstrate any advantage of fast neutron radiotherapy as compared with photon therapy. However, greater numbers of patients require to be studied and followed-up for longer intervals. A definitive assessment of the randomly controlled clinical trials in Edinburgh should be possible at the end of 1982

Neutron transmutation doped Ge bolometers

Science.gov (United States)

Haller, E. E.; Kreysa, E.; Palaio, N. P.; Richards, P. L.; Rodder, M.

1983-01-01

Some conclusions reached are as follow. Neutron Transmutation Doping (NTD) of high quality Ge single crystals provides perfect control of doping concentration and uniformity. The resistivity can be tailored to any given bolometer operating temperature down to 0.1 K and probably lower. The excellent uniformity is advantaged for detector array development.

Search for narrow meson production in antipN interactions at 6 and 9 GeV

International Nuclear Information System (INIS)

Vilanova, D.

1984-02-01

The experiment described in this report was carried out with the SLAC hybrid bubble chamber. Evidence was found for a narrow peak of mass M approximately 2.02 GeV and width GAMMA + π - π - at 6 GeV and antipp → πsub(f)sub(+)(antipn)π + π - at GeV, with an observed cross section of about 1 μb in both cases. The total statistical significance of these signals is better that 7 σ; the production mechanisms of this NantiN resonance which could be an isovector baryonium seem very complex. More classical resonances such as the ω(1670) detected in the reaction antipp → π + π + π - π - π 0 in its π + π - π 0 decay mode were otherwise analysed [fr

Dislocation-free Ge Nano-crystals via Pattern Independent Selective Ge Heteroepitaxy on Si Nano-Tip Wafers.

Science.gov (United States)

Niu, Gang; Capellini, Giovanni; Schubert, Markus Andreas; Niermann, Tore; Zaumseil, Peter; Katzer, Jens; Krause, Hans-Michael; Skibitzki, Oliver; Lehmann, Michael; Xie, Ya-Hong; von Känel, Hans; Schroeder, Thomas

2016-03-04

The integration of dislocation-free Ge nano-islands was realized via selective molecular beam epitaxy on Si nano-tip patterned substrates. The Si-tip wafers feature a rectangular array of nanometer sized Si tips with (001) facet exposed among a SiO2 matrix. These wafers were fabricated by complementary metal-oxide-semiconductor (CMOS) compatible nanotechnology. Calculations based on nucleation theory predict that the selective growth occurs close to thermodynamic equilibrium, where condensation of Ge adatoms on SiO2 is disfavored due to the extremely short re-evaporation time and diffusion length. The growth selectivity is ensured by the desorption-limited growth regime leading to the observed pattern independence, i.e. the absence of loading effect commonly encountered in chemical vapor deposition. The growth condition of high temperature and low deposition rate is responsible for the observed high crystalline quality of the Ge islands which is also associated with negligible Si-Ge intermixing owing to geometric hindrance by the Si nano-tip approach. Single island as well as area-averaged characterization methods demonstrate that Ge islands are dislocation-free and heteroepitaxial strain is fully relaxed. Such well-ordered high quality Ge islands present a step towards the achievement of materials suitable for optical applications.

Evidence for a narrow peak in $K0_{S}\\pi \\pm \\pi^{+}pi^{-}$ at 2.6 GeV in 12 GeV/c $\\overline{p}$p interactions

CERN Document Server

Apostolakis, Alcibiades J; Caso, Carlo; Goldschmidt-Clermont, Yves; Pape, L; Porte, J P; Stergiou, Athanase; Tallini, Bruno; Vasileiadis, G; Wenninger, Horst; Grard, G; Henri, V P; Herquet, P; Kesteman, J; Banerjee, S; Barnham, Keith W J; Beuselinck, R; Butterworth, Ian; Campbell, J Ronald; Chaff, J A; Mermikides, Michael E; Miller, D B; Bertrand, D; Johnson, D; Lemonne, J; Renton, P B; Wickens, J H; Van den Bogaert, F; Daugeras, B Y; Jacholkowska, A

1977-01-01

The authors report the evidence for a narrow charged peak (5.5 s.d.), which they suggest calling the I, in the 6-prong-V/sup 0/ topology of pp interactions at 12 GeV/c. The mass, width and the product of cross section sigma /sub I/ times the branching ratio BR into the final state (K/sub s//sup 0/ pi /sup +or-/ pi /sup +/ pi /sup -/) are found to be: M/sub I/=2.60+or-0.01 GeV/c/sup 2/, Gamma /sub I/GeV /c/sup 2/, sigma /sub I/.BR approximately=20 mu barn. (5 refs).

Structural and electronic properties of Pt induced nanowires on Ge(110)

Energy Technology Data Exchange (ETDEWEB)

Zhang, L.; Bampoulis, P.; Safaei, A.; Zandvliet, H.J.W.; Houselt, A. van, E-mail: A.vanHouselt@utwente.nl

2016-11-30

Highlights: • Deposition of Pt induces regularly spaced (1.13 nm, 1.97 nm and 3.38 nm) nanowires on Ge(110). • In the troughs between the wires spaced 6× the Ge lattice consant pentagons are observed. • Spatially resolved STS reveals a filled electronic state at −0.35 eV. • This state has its highest intensity above the pentagons. • For 2 ML Pt, nanowires coexist with PtGe clusters, which become liquid like above 1040 K. - Abstract: The structural and electronic properties of Pt induced nanowires on Ge(110) surfaces have been studied by scanning tunneling microscopy and low energy electron microscopy. The deposition of a sub-monolayer amount of Pt and subsequent annealing at 1100 (±30) K results into nanowires which are aligned along the densely packed [1–10] direction of the Ge(110) surface. With increasing Pt coverage the nanowires form densely packed arrays with separations of 1.1 ± 0.1 nm, 2.0 ± 0.1 nm and 3.4 ± 0.1 nm. Ge pentagons reside in the troughs for nanowire separations of 3.4 nm, however for smaller nanowire separations no pentagons are found. Spatially resolved scanning tunneling spectroscopy measurements reveal a filled electronic state at −0.35 eV. This electronic state is present in the troughs as well as on the nanowires. The −0.35 eV state has the strongest intensity on the pentagons. For Pt depositions exceeding two monolayers, pentagon free nanowire patches are found, that coexist with Pt/Ge clusters. Upon annealing at 1040 K these Pt/Ge clusters become liquid-like, indicating that we are dealing with eutectic Pt{sub 0.22}Ge{sub 0.78} clusters. Low energy electron microscopy videos reveal the formation and spinodal decomposition of these eutectic Pt/Ge clusters.

Precision measurements of g1 of the proton and the deuteron with 6 GeV electrons

Energy Technology Data Exchange (ETDEWEB)

Prok, Yelena; Bosted, Peter; Kvaltine, Nicholas; Adhikari, Krishna; Adikaram-Mudiyanselage, Dasuni; Aghasyan, Mher; Amaryan, Moskov; Anderson, Mark; Anefalos Pereira, Sergio; Avagyan, Harutyun; Baghdasaryan, Hovhannes; Ball, Jacques; Baltzell, Nathan; Battaglieri, Marco; Biselli, Angela; Bono, Jason; Briscoe, William; Brock, Joseph; Brooks, William; Bueltmann, Stephen; Burkert, Volker; Carlin, Christopher; Carman, Daniel; Celentano, Andrea; Chandavar, Shloka; Colaneri, Luca; Cole, Philip; Contalbrigo, Marco; Cortes, Olga; Crabb, Donald; Crede, Volker; D' Angelo, Annalisa; Dashyan, Natalya; De Vita, Raffaella; De Sanctis, Enzo; Deur, Alexandre; Djalali, Chaden; Dodge, Gail; Doughty, David; Dupre, Raphael; El Alaoui, Ahmed; El Fassi, Lamiaa; Elouadrhiri, Latifa; Fedotov, Gleb; Fegan, Stuart; Fersch, Robert; Fleming, Jamie; Forest, Tony; Garcon, Michel; Gevorgyan, Nerses; Ghandilyan, Yeranuhi; Gilfoyle, Gerard; Girod-Gard, Francois-Xavier; Giovanetti, Kevin; Goetz, John; Gohn, Wesley; Gothe, Ralf; Griffioen, Keith; Guegan, Baptiste; Guler, Nevzat; Hafidi, Kawtar; Hanretty, Charles; Harrison, Nathan; Hattawy, Mohammad; Hicks, Kenneth; Ho, Dao; Holtrop, Maurik; Ilieva, Yordanka; Ireland, David; Ishkhanov, Boris; Isupov, Evgeny; Jawalkar, Sucheta; Jiang, Xiaodong; Jo, Hyon-Suk; Joo, Kyungseon; Kalantarians, Narbe; Keith, Christopher; Keller, Daniel; Khandaker, Mahbubul; Kim, Andrey; Kim, Wooyoung; Klein, Andreas; Klein, Franz; Koirala, Suman; Kubarovsky, Valery; Kuhn, Sebastian; Kuleshov, Sergey; Lenisa, Paolo; Livingston, Kenneth; Lu, Haiyun; MacGregor, Ian; Markov, Nikolai; Mayer, Michael; McKinnon, Bryan; Meekins, David; Mineeva, Taisiya; Mirazita, Marco; Mokeev, Viktor; Montgomery, Rachel; MOUTARDE, Herve; Movsisyan, Aram; Munevar Espitia, Edwin; Munoz Camacho, Carlos; Nadel-Turonski, Pawel; Niccolai, Silvia; Niculescu, Gabriel; Niculescu, Maria; Osipenko, Mikhail; Ostrovidov, Alexander; Pappalardo, Luciano; Paremuzyan, Rafayel; Park, K; Peng, Peng; Phillips, J J; Pierce, Joshua; Pisano, Silvia; Pogorelko, Oleg; Pozdniakov, Serguei; Price, John; Procureur, Sebastien; Protopopescu, Dan; Puckett, Andrew; Raue, Brian; Rimal, Dipak; Ripani, Marco; Rizzo, Alessandro; Rosner, Guenther; Rossi, Patrizia; Roy, Priyashree; Sabatie, Franck; Saini, Mukesh; Salgado, Carlos; Schott, Diane; Schumacher, Reinhard; Seder, Erin; Sharabian, Youri; Simonyan, Ani; Smith, Claude; Smith, Gregory; Sober, Daniel; Sokhan, Daria; Stepanyan, Stepan; Stepanyan, Samuel; Strakovski, Igor; Strauch, Steffen; Sytnik, Valeriy; Taiuti, Mauro; Tang, Wei; Tkachenko, Svyatoslav; Ungaro, Maurizio; Vernarsky, Brian; Vlasov, Alexander; Voskanyan, Hakob; Voutier, Eric; Walford, Natalie; Watts, Daniel; Weinstein, Lawrence; Zachariou, Nicholas; Zana, Lorenzo; Zhang, Jixie; Zhao, Bo; Zhao, Zhiwen; Zonta, Irene

2014-08-01

The inclusive polarized structure functions of the proton and deuteron, g1p and g1d, were measured with high statistical precision using polarized 6 GeV electrons incident on a polarized ammonia target in Hall B at Jefferson Laboratory. Electrons scattered at lab angles between 18 and 45 degrees were detected using the CEBAF Large Acceptance Spectrometer (CLAS). For the usual DIS kinematics, Q^2>1 GeV^2 and the final-state invariant mass W>2 GeV, the ratio of polarized to unpolarized structure functions g1/F1 is found to be nearly independent of Q^2 at fixed x. Significant resonant structure is apparent at values of W up to 2.3 GeV. In the framework of perturbative QCD, the high-W results can be used to better constrain the polarization of quarks and gluons in the nucleon, as well as high-twist contributions.

Transport policy and health inequalities: a health impact assessment of Edinburgh's transport policy.

Science.gov (United States)

Gorman, D; Douglas, M J; Conway, L; Noble, P; Hanlon, P

2003-01-01

Health impact assessment (HIA) can be used to examine the relationships between inequalities and health. This HIA of Edinburgh's transport policy demonstrates how HIA can examine how different transport policies can affect different population groupings to varying degrees. In this case, Edinburgh's economy is based on tourism, financial services and Government bodies. These need a good transport infrastructure, which maintains a vibrant city centre. A transport policy that promotes walking, cycling and public transport supports this and is also good for health. The HIA suggested that greater spend on public transport and supporting sustainable modes of transport was beneficial to health, and offered scope to reduce inequalities. This message was understood by the City Council and influenced the development of the city's transport and land-use strategies. The paper discusses how HIA can influence public policy.

Syntheses and structural characterization of non-centrosymmetric Na{sub 2}M{sub 2}M'S{sub 6} (M, M′=Ga, In, Si, Ge, Sn, Zn, Cd) sulfides

Energy Technology Data Exchange (ETDEWEB)

Yohannan, Jinu P.; Vidyasagar, Kanamaluru, E-mail: kvsagar@iitm.ac.in

2016-06-15

Seven new non-centrosymmetric Na{sub 2}M{sub 2}M’S{sub 6} sulfides, namely, Na{sub 2}Sn{sub 2}ZnS{sub 6}(1){sub ,} Na{sub 2}Ga{sub 2}GeS{sub 6}(2), Na{sub 2}Ga{sub 2}SnS{sub 6}(3-α), Na{sub 2}Ga{sub 2}SnS{sub 6}(3-β){sub ,} Na{sub 2}Ge{sub 2}ZnS{sub 6}(4){sub ,} Na{sub 2}Ge{sub 2}CdS{sub 6}(5){sub ,} Na{sub 2}In{sub 2}SiS{sub 6}(6) and Na{sub 2}In{sub 2}GeS{sub 6}(7), were synthesized by high temperature solid state reactions and structurally characterized by single crystal X-ray diffraction. They crystallize in non-centrosymmetric Fdd2 and Cc space groups and their three-dimensional [M{sub 2}M′S{sub 6}]{sup 2-}framework structures consist of MS{sub 4} and M′S{sub 4} tetrahedra corner-connected to one another in either orderly or disordered fashion. Sodium ions reside in the tunnels of the anionic framework. Compounds 1, 2 and 3-α have the structure of known Li{sub 2}Ga{sub 2}GeS{sub 6}, whereas compounds 6 and 7 are isostructural with known Li{sub 2}In{sub 2}GeS{sub 6} compound. Isostructural compounds 4 and 5 represent a new structural variant. Compounds 3-α and its new monoclinic structural variant 3-β have disordered structural framework. All of them are wide band gap semiconductors. Na{sub 2}Ga{sub 2}GeS{sub 6}(2), Na{sub 2}Ga{sub 2}SnS{sub 6}(3), Na{sub 2}Ge{sub 2}ZnS{sub 6}(4) and Na{sub 2}In{sub 2}GeS{sub 6}(7) compounds are found to be second-harmonic generation (SHG) active. Compounds 1, 2 and 3-α melt congruently. - Graphical abstract: Na{sub 2}Ga{sub 2}GeS{sub 6}, Na{sub 2}Ga{sub 2}SnS{sub 6}, Na{sub 2}Ge{sub 2}ZnS{sub 6}, Na{sub 2}In{sub 2}GeS{sub 6}, Na{sub 2}Sn{sub 2}ZnS{sub 6}, Na{sub 2}Ge{sub 2}CdS{sub 6} and Na{sub 2}In{sub 2}SiS{sub 6} have non-centrosymmetric structures and the first four compounds are SHG active. Display Omitted - Highlights: • Seven new Na{sub 2}M{sub 2}M′S{sub 6} compounds with non-centrosymmetric structures were synthesized. • They are wide band gap semiconductors. • Na{sub 2}Ga{sub 2}GeS{sub 6}, Na{sub 2

Target and beam-target spin asymmetries in exclusive π+ and π- electroproduction with 1.6- to 5.7-GeV electrons

Science.gov (United States)

Bosted, P. E.; Biselli, A. S.; Careccia, S.; Dodge, G.; Fersch, R.; Guler, N.; Kuhn, S. E.; Pierce, J.; Prok, Y.; Zheng, X.; Adhikari, K. P.; Adikaram, D.; Akbar, Z.; Amaryan, M. J.; Anefalos Pereira, S.; Asryan, G.; Avakian, H.; Badui, R. A.; Ball, J.; Baltzell, N. A.; Battaglieri, M.; Batourine, V.; Bedlinskiy, I.; Boiarinov, S.; Briscoe, W. J.; Bültmann, S.; Burkert, V. D.; Cao, T.; Carman, D. S.; Celentano, A.; Chandavar, S.; Charles, G.; Chetry, T.; Ciullo, G.; Clark, L.; Colaneri, L.; Cole, P. L.; Contalbrigo, M.; Cortes, O.; Crede, V.; D'Angelo, A.; Dashyan, N.; De Vita, R.; Deur, A.; Djalali, C.; Dupre, R.; Egiyan, H.; El Alaoui, A.; El Fassi, L.; Eugenio, P.; Fanchini, E.; Fedotov, G.; Filippi, A.; Fleming, J. A.; Forest, T. A.; Fradi, A.; Garçon, M.; Gevorgyan, N.; Ghandilyan, Y.; Gilfoyle, G. P.; Giovanetti, K. L.; Girod, F. X.; Gleason, C.; Gohn, W.; Golovatch, E.; Gothe, R. W.; Griffioen, K. A.; Guo, L.; Hafidi, K.; Hanretty, C.; Harrison, N.; Hattawy, M.; Heddle, D.; Hicks, K.; Holtrop, M.; Hughes, S. M.; Ilieva, Y.; Ireland, D. G.; Ishkhanov, B. S.; Isupov, E. L.; Jenkins, D.; Jiang, H.; Jo, H. S.; Joo, K.; Joosten, S.; Keller, D.; Khandaker, M.; Kim, W.; Klein, A.; Klein, F. J.; Kubarovsky, V.; Kuleshov, S. V.; Lanza, L.; Lenisa, P.; Livingston, K.; Lu, H. Y.; MacGregor, I. J. D.; Markov, N.; McCracken, M. E.; McKinnon, B.; Meyer, C. A.; Minehart, R.; Mirazita, M.; Mokeev, V.; Movsisyan, A.; Munevar, E.; Munoz Camacho, C.; Nadel-Turonski, P.; Net, L. A.; Ni, A.; Niccolai, S.; Niculescu, G.; Niculescu, I.; Osipenko, M.; Ostrovidov, A. I.; Paremuzyan, R.; Park, K.; Pasyuk, E.; Peng, P.; Phelps, W.; Pisano, S.; Pogorelko, O.; Price, J. W.; Procureur, S.; Protopopescu, D.; Puckett, A. J. R.; Raue, B. A.; Ripani, M.; Rizzo, A.; Rosner, G.; Rossi, P.; Roy, P.; Sabatié, F.; Salgado, C.; Schumacher, R. A.; Seder, E.; Sharabian, Y. G.; Simonyan, A.; Skorodumina, Iu.; Smith, G. D.; Sparveris, N.; Stankovic, Ivana; Stepanyan, S.; Strakovsky, I. I.; Strauch, S.; Sytnik, V.; Taiuti, M.; Tian, Ye; Torayev, B.; Ungaro, M.; Voskanyan, H.; Voutier, E.; Walford, N. K.; Watts, D. P.; Wei, X.; Weinstein, L. B.; Wood, M. H.; Zachariou, N.; Zana, L.; Zhang, J.; Zhao, Z. W.; Zonta, I.; CLAS Collaboration

2016-11-01

Beam-target double-spin asymmetries and target single-spin asymmetries in exclusive π+ and quasiexclusive π- electroproduction were obtained from scattering of 1.6- to 5.7-GeV longitudinally polarized electrons from longitudinally polarized protons (for π+) and deuterons (for π-) using the CEBAF Large Acceptance Spectrometer (CLAS) at Jefferson Lab. The kinematic range covered is 1.1 1.5 GeV. Very large target-spin asymmetries are observed for W >1.6 GeV. When combined with cross-section measurements, the present results can provide powerful constraints on nucleon resonance amplitudes at moderate and large values of Q2, for resonances with masses as high as 2.3 GeV.

Direct electrons at the CERN ISR. II. A study of the transverse momentum dependence above 0.6 GeV/c

International Nuclear Information System (INIS)

Buesser, F.W.; Camilleri, L.; Di Lella, L.

1975-01-01

The previously reported observation of direct electrons produced in proton-proton collisions at the CERN ISR was extended to transverse moments, p*/sub T/, as low as 0.6 GeV/c. The ratio of electron to pion cross sections seems to rise as p*/sub T/ is decreased. It increases by at most a factor of 2 between p*/sub T/ of 2 and 0.6 GeV/c. Results on the s-dependence of this ratio and on correlated charged particles are presented for p*/sub T/ greater than or equal to 1 GeV/c in another work

Gold deposited on a Ge(0 0 1) surface: DFT calculations

Science.gov (United States)

Tsay, Shiow-Fon

2016-11-01

The atomic geometry, stability and electronic properties of self-organized Au induced nanowires on a Ge(0 0 1) surface are investigated based on the density-functional theory in the generalized gradient approximation and the stoichiometry of Au. According to the formation energy and the simulated STM image, the Ge atoms substituted by the Au atoms have been confirmed as occurring at a Au coverage lower than 0.25 Ml. The STM image with single and double dimer vacancies looks like the Au atoms have penetrated the subsurface. The energetically favorable dimer-row arrayed structures at 0.50 Ml and 0.75 Ml Au coverages have a 4  ×  1, 4  ×  2 or c(8  ×  2) transition symmetry, which comprise a flat Au-Au homodimer row and an alternating various buckling phase Ge-Ge or Au-Ge dimer row. The c(8  ×  2) zigzag-shaped protruding chains of shallow-groove STM images are highly consistent with the observations, but a long-range order dimer-row arrayed structure formation requires sufficient mobile energy to complete mass transport of the substituted Ge atoms in order to avoid the re-adsorption of these atoms; otherwise a deep-groove structure reconstruction is sequentially formed. A quasi-1D electron-like energy trough aligns in the direction perpendicular to the nanowire of the dimer-row arrayed structure in the c(8  ×  2) phase on a 0.75 Ml Au/Ge(0 0 1) surface, which is contributed by the Au-Ge dimer rows and the subsurface Ge atoms below them. The bottom energy of the energy trough is consistent with angle-resolved photo-emission spectroscopy studies (Schäfer et al 2008 Phys. Rev. Lett. 101 236802, Meyer et al 2011 Phys. Rev. B 83 121411(R)).

12 GeV detector technology at Jefferson Lab

Energy Technology Data Exchange (ETDEWEB)

Leckey, John P. [Indiana University, Bloomington, IN 47405 (United States); Collaboration: GlueX Collaboration

2013-04-19

The Thomas Jefferson National Accelerator Facility (JLab) is presently in the middle of an upgrade to increase the energy of its CW electron beam from 6 GeV to 12 GeV along with the addition of a fourth experimental hall. Driven both by necessity and availability, novel detectors and electronics modules have been used in the upgrade. One such sensor is the Silicon Photomultiplier (SiPM), specifically a Multi-Pixel Photon Counter (MPPC), which is an array of avalanche photodiode pixels operating in Geiger mode that are used to sense photons. The SiPMs replace conventional photomultiplier tubes and have several distinct advantages including the safe operation in a magnetic field and the lack of need for high voltage. Another key to 12 GeV success is advanced fast electronics. Jlab will use custom 250 MHz and 125 MHz 12-bit analog to digital converters (ADCs) and time to digital converters (TDCs) all of which take advantage of VME Switched Serial (VXS) bus with its GB/s high bandwidth readout capability. These new technologies will be used to readout drift chambers, calorimeters, spectrometers and other particle detectors at Jlab once the 12 GeV upgrade is complete. The largest experiment at Jlab utilizing these components is GlueX - an experiment in the newly constructed Hall D that will study the photoproduction of light mesons in the search for hybrid mesons. The performance of these components and their respective detectors will be presented.

Cosmic Ray Helium Isotopes From 0.2 to 3.6 GeV/nucleon

DEFF Research Database (Denmark)

Reimer, O.; Hof, M.; Menn, W.

1996-01-01

mass by means of the velocity vs. magnetic rigidity technique. A model of the instrument response was developed in order to unfold the species and rigidity-dependent effects. Measurements and astrophysical interpretation of the ^3He/^4He isotope ratio from 0.2 to 3.6 GeV/nucleon will be presented...

System, centrality, and transverse mass dependence of two-pion correlation radii in heavy ion collisions at 11.6A and 14.6A GeV/c

International Nuclear Information System (INIS)

Ahle, L.; Baker, M.D.; Cianciolo, V.; Costales, J.B.; Dunlop, J.C.; Heintzelman, G.; Judd, E.; Kehoe, W.L.; Ledoux, R.J.; Morrison, D.P.; Morse, R.J.; Ogilvie, C.A.; Parsons, C.G.; Rothschild, P.; Soltz, R.A.; Steadman, S.G.; Stephans, G.S.F.; Sung, T.W.; Vutsadakis, V.; Woodruff, D.

2002-01-01

Two-pion correlation functions are analyzed at midrapidity for three systems (14.6A GeV/c Si+Al, Si+Au, and 11.6A GeV/c Au+Au), seven distinct centrality conditions, and different k T bins in the range 0.1-0.5 GeV/c. Source reference frames are determined from fits to the Yano-Koonin source parametrization. Bertsch-Pratt radius parameters are shown to scale linearly with both number of projectile and total participants as obtained from a Glauber model calculation. A finite lifetime parameter that increases linearly with system/centrality is also reported. The m T dependences of the Bertsch-Pratt radii for the central Si+Au and central Au+Au systems differ only by an overall normalization factor given by the measured system/centrality dependence

Production status of GaAs/Ge solar cells and panels

Science.gov (United States)

Smith, B.; Gillanders, M.; Vijayakumar, P.; Lillington, D.; Yang, H.; Rolph, R.

1991-01-01

GaAs/Ge solar cells with lot average efficiencies in excess of 18 percent were produced by MOCVD growth techniques. A description of the cell, its performance and the production facility are discussed. Production GaAs/Ge cells of this type were recently assembled into circuits and bonded to aluminum honeycomb panels to be used as the solar array for the British UOSAT-F program.

Assembly of Ge nanocrystals on SiO2 via a stress-induced dewetting process

International Nuclear Information System (INIS)

Sutter, E; Sutter, P

2006-01-01

We use epitaxial Ge islands on silicon-on-insulator (001) to initiate and drive the dewetting of the ultrathin ( 2 layer and transforms the Ge islands into oxide-supported, electrically isolated, Ge-rich nanocrystals. We investigate the process of dewetting and demonstrate that it can be used for the controlled assembly of nanocrystals-from isolated single ones to dense arrays

Magnetic properties of ultrathin Co/Ge(111) and Co/Ge(100) films

International Nuclear Information System (INIS)

Cheng, W. C.; Tsay, J. S.; Yao, Y. D.; Lin, K. C.; Yang, C. S.; Lee, S. F.; Tseng, T. K.; Neih, H. Y.

2001-01-01

The orientation of the magnetization and the occurrence of interfacial ferromagnetic inactive layers for ultrathin Co films grown on Ge(111) and Ge(100) surfaces have been studied using the in situ surface magneto-optic Kerr effect. On a Ge(111) substrate, cobalt films (≤28 monolayers) with in-plane easy axis of magnetization have been observed; however, on a Ge(100) substrate, ultrathin Co films (14 - 16 monolayers) with canted out-of-plane easy axis of magnetization were measured. The ferromagnetic inactive layers were formed due to the intermixing of Co and Ge and lowering the Curie temperature by reducing Co film thickness. The Co - Ge compound inactive layers were 3.8 monolayers thick for Co films grown on Ge(111) and 6.2 monolayers thick for Co films deposited on Ge(100). This is attributed to the difference of the density of surface atoms on Ge(111) and Ge(100). [copyright] 2001 American Institute of Physics

Status of development of the Gamma Ray Energy Tracking Array (GRETA)

Energy Technology Data Exchange (ETDEWEB)

Lee, I.Y.; Schmid, G.J.; Vetter, K. [Lawrence Berkeley National Lab., CA (United States)] [and others

1996-12-31

The current generation of large gamma-ray detector arrays, Gammasphere, Eurogam and GASP, are based on modules of Compton suppressed Ge detectors. Due to the solid angle occupied by the Compton shields and to gamma rays escaping the detector, the total peak efficiency of such a design is limited to about 20% for a 1.3 MeV gamma ray. A shell consisting of closely packed Ge detectors has been suggested as the solution to the efficiency limitation. In this case, the entire solid angle is covered by Ge detectors, and by adding the signal from neighboring detectors, the escaped energy is recovered and much higher efficiency can be achieved (e.g. 60% for a 1.3 MeV gamma ray). However, for high multiplicity cascades, the summing of two gamma rays hitting neighboring detectors reduces the efficiency and increases the background. In order to reduce this summing, a large number of detectors is required. For example, with a multiplicity of 25, one needs about 1500 detectors to keep the probability of false summing below 10% and the cost of such a detector array will be prohibitive. Rather than such an approach, the authors are developing a new concept for a gamma-ray array; a shell of closely-packed Ge detectors consisting of 100-200 highly-segmented elements. The high granularity of the segmented Ge detector enables the authors to resolve each of the scattering interactions and determine its position and energy. A tracking algorithm, using the position and energy information, will then identify the interactions belonging to a particular gamma ray and its energy is obtained by summing only these interactions. Such an array can reach a total efficiency about 60%, with a resolving power 1000 times higher than that of current arrays.

Photo-induced effects of the virgin Ge_2_4_._9Sb_1_1_._6S_6_3_._5 film

International Nuclear Information System (INIS)

Knotek, P.; Tichy, L.; Kutalek, P.

2015-01-01

Amorphous Ge_2_4_._9Sb_1_1_._6S_6_3_._5 film was prepared through thermal evaporation. A blue shift of the optical band gap by approximately 100 meV was observed as a result of self-bleaching process of protected film aged for two years. The magnitude of the light induced blue shift of the optical band of the virgin film is primarily dependent on the light penetration depth and on the light intensity. The kinetics of photo-bleaching follows the stretch exponential function with a formal rate of bleaching depending on the light intensity while the saturated state is independent from the light intensity. The far infrared spectra indicate that ageing, illumination by over-band gap-photons and annealing of the virgin film are mainly accompanied by the film network ordering. Illumination by UV light photons led to a blue shift accompanied by the significant oxidation as evidenced by the results of the far infrared spectra and the energy dispersive analysis. - Highlights: • “Giant” photo-induced effects in virgin Ge_2_4_._9Sb_1_1_._6S_6_3_._5 film • The role of the film thickness, the wavelengths and intensity of excitation photons • The changes of the photo-sensitivity due to the self-ageing process • The high-intensity illumination (> 10 W/cm"2) led to the different processes

Evidence for Kinetic Limitations as a Controlling Factor of Ge Pyramid Formation: a Study of Structural Features of Ge/Si(001) Wetting Layer Formed by Ge Deposition at Room Temperature Followed by Annealing at 600 °C.

Science.gov (United States)

Storozhevykh, Mikhail S; Arapkina, Larisa V; Yuryev, Vladimir A

2015-12-01

The article presents an experimental study of an issue of whether the formation of arrays of Ge quantum dots on the Si(001) surface is an equilibrium process or it is kinetically controlled. We deposited Ge on Si(001) at the room temperature and explored crystallization of the disordered Ge film as a result of annealing at 600 °C. The experiment has demonstrated that the Ge/Si(001) film formed in the conditions of an isolated system consists of the standard patched wetting layer and large droplike clusters of Ge rather than of huts or domes which appear when a film is grown in a flux of Ge atoms arriving on its surface. We conclude that the growth of the pyramids appearing at temperatures greater than 600 °C is controlled by kinetics rather than thermodynamic equilibrium whereas the wetting layer is an equilibrium structure. Primary 68.37.Ef; 68.55.Ac; 68.65.Hb; 81.07.Ta; 81.16.Dn.

A question of merit: John Hutton Balfour, Joseph Hooker and the 'concussion' over the Edinburgh chair of botany.

Science.gov (United States)

Bellon, Richard

2005-03-01

In 1845, Robert Graham's death created a vacancy for the traditionally dual appointment to the University of Edinburgh's chair of botany and the Regius Keepership of the Edinburgh Royal Botanic Garden. John Hutton Balfour and Joseph Hooker emerged as the leading candidates. The contest quickly became embroiled in long running controversies over the nature and control of Scottish university education at a time of particular social and political tension after a recent schism in Church of Scotland. The politics of the appointment were complicated by the fact that the Edinburgh Town Council (which preferred Balfour) chose the chair while the keepership was under the patronage of the Westminster government (which preferred Hooker). Balfour eventually emerged triumphant after a bitter campaign marked on all sides by intense politicking. The struggle to replace Graham provides a case study in how Victorian men of science adapted their aspirations to the practical realities of life in industrial, reforming, imperial, multinational Britain.

Neutral V production with 14.6 x A GeV/c silicon beams

International Nuclear Information System (INIS)

Eiseman, S.E.; Etkin, A.; Foley, K.J.; Hackenburg, R.W.; Longacre, R.S.; Love, W.A.; Morris, T.W.; Platner, E.D.; Saulys, A.C.; Lindenbaum, S.J.; Chan, C.S.; Kramer, M.A.; Zhao, K.; Hallman, T.J.; Madansky, L.; Bonner, B.E.; Buchanan, J.A.; Chiou, C.N.; Clement, J.M.; Corcoran, M.D.; Kruk, J.W.; Mutchler, G.S.; Nessi-Tedaldi, F.; Nessi, M.; Roberts, J.B.

1990-01-01

We present the results of a measurement of neutral V production with 14.6xA GeV/c Si beams on Au and Cu targets. The Λ and K s 0 yields were measured as a function of negative particle multiplicity. Effective temperatures were determined from an exponential fit to the transverse mass distributions. (orig.)

Parity nonconserving asymmetry in p-p scattering up to 6 GeV/c

International Nuclear Information System (INIS)

Oka, Takamitsu.

1981-03-01

A parity nonconserving asymmetry in proton-proton scattering is studied. We calculate the longitudinal analyzing power for the momentum of incident proton up to P sub(L) -- 6 GeV/c. For the weak matrix element, we adopt one-boson-exchange interactions coming from vector mesons (rho 0 and ω) as well as Z-boson. (author)

XRD analysis of strained Ge-SiGe heterostructures on relaxed SiGe graded buffers grown by hybrid epitaxy on Si(0 0 1) substrates

International Nuclear Information System (INIS)

Franco, N.; Barradas, N.P.; Alves, E.; Vallera, A.M.; Morris, R.J.H.; Mironov, O.A.; Parker, E.H.C.

2005-01-01

Ge/Si 1-x Ge x inverted modulation doped heterostructures with Ge channel thickness of 16 and 20 nm were grown by a method of hybrid epitaxy followed by ex situ annealing at 650 deg. C for p-HMOS application. The thicker layers of the virtual substrate (6000 nm graded SiGe up to x = 0.6 and 1000 nm uniform composition with x = 0.6) were produced by ultrahigh vacuum chemical vapor deposition (UHV-CVD) while the thinner, Si(2 nm)-SiGe(20 nm)-Ge-SiGe(15 nm + 5 nm B-doped + 20 nm) active layers were grown by low temperature solid-source (LT-SS) MBE at T = 350 deg. C. As-grown and annealed samples were measured by X-ray diffraction (XRD). Reciprocal space maps (RSMs) allowed us to determine non-destructively the precise composition (∼1%) and strain of the Ge channel, along with similar information regarding the other layers that made up the whole structure. Layer thickness was determined with complementary high-resolution Rutherford backscattering (RBS) experiments

SiGe BiCMOS manufacturing platform for mmWave applications

Science.gov (United States)

Kar-Roy, Arjun; Howard, David; Preisler, Edward; Racanelli, Marco; Chaudhry, Samir; Blaschke, Volker

2010-10-01

TowerJazz offers high volume manufacturable commercial SiGe BiCMOS technology platforms to address the mmWave market. In this paper, first, the SiGe BiCMOS process technology platforms such as SBC18 and SBC13 are described. These manufacturing platforms integrate 200 GHz fT/fMAX SiGe NPN with deep trench isolation into 0.18μm and 0.13μm node CMOS processes along with high density 5.6fF/μm2 stacked MIM capacitors, high value polysilicon resistors, high-Q metal resistors, lateral PNP transistors, and triple well isolation using deep n-well for mixed-signal integration, and, multiple varactors and compact high-Q inductors for RF needs. Second, design enablement tools that maximize performance and lowers costs and time to market such as scalable PSP and HICUM models, statistical and Xsigma models, reliability modeling tools, process control model tools, inductor toolbox and transmission line models are described. Finally, demonstrations in silicon for mmWave applications in the areas of optical networking, mobile broadband, phased array radar, collision avoidance radar and W-band imaging are listed.

V0 production in p+A collisions at √(s)=41.6 GeV

International Nuclear Information System (INIS)

Abt, I.; Kisel, I.; Adams, M.; Cruse, C.; Ehret, K.; Funcke, M.; Schwenninger, B.; Wegener, D.; Agari, M.; Bauer, C.; Braeuer, M.; Hofmann, W.; Jagla, T.; Knoepfle, K.T.; Pleier, M.A.; Reeves, K.; Sanchez, F.; Schmelling, M.; Schwingenheuer, B.; Sciacca, F.; Albrecht, H.; Aplin, S.J.; Bagaturia, Y.; Egorytchev, V.; Emeliyanov, D.; Flammer, J.; Goloubkov, D.; Golubkov, Y.; Hohlmann, M.; Lewendel, B.; Lomonosov, B.; Masciocchi, S.; Medinnis, M.; Mevius, M.; Michetti, A.; Negodaev, M.; Noerenberg, M.; Nunez Pardo de Vera, M.T.; Padilla, C.; Ressing, D.; Riu, I.; Rybnikov, V.; Schmidt, B.; Schwarz, A.S.; Soezueer, L.; Somov, A.; Somov, S.; Spengler, J.; Wurth, R.; Aleksandrov, A.; Bohm, G.; Gellrich, A.; Hernandez, J.M.; Mankel, R.; Nowak, S.; Schreiner, A.; Schwanke, U.; Walter, M.; Amaral, V.; Amorim, A.; Bastos, J.; Batista, J.; Carvalho, J.; Silva, L.; Wolters, H.; Aushev, V.; Prystupa, S.; Pugatch, V.; Vassiliev, Yu.; Balagura, V.; Bobchenko, B.; Bogatyrev, A.; Danilov, M.; Essenov, S.; Fominykh, B.; Golutvin, A.; Gouchtchine, O.; Guilitsky, Yu.; Igonkina, O.; Khasanov, F.; Kvaratskheliia, T.; Matchikhilian, I.; Mikhailov, Yu.; Mizuk, R.; Popov, V.; Rostovtseva, I.; Tikhomirov, I.; Titov, M.; Zaitsev, Yu.; Zhelezov, A.; Bargiotti, M.; Bertin, A.; Bruschi, M.; De Castro, S.; Fabbri, L.; Faccioli, P.; Giacobbe, B.; Grimaldi, F.; Massa, I.; Piccinini, M.; Poli, M.; Semprini-Cesari, N.; Spighi, R.; Villa, M.; Vitale, A.; Zoccoli, A.; Barsukova, O.; Belkov, A.; Belkov, Ar.; Belotelov, I.; Golutvin, I.; Karpenko, N.; Kiryushin, Yu.; Lanyov, A.; Solunin, S.; Bauer, T.S.; Hulsbergen, W.; Sbrizzi, A.; Boecker, M.; Buchholz, P.; Husemann, U.; Keller, S.; Walenta, A.H.; Werthenbach, U.; Bruinsma, M.; Ouchrif, M.; Buran, T.; Danielsen, K.M.; Ould-Saada, F.; Pylypchenko, Y.; Conde, P.; Dam, M.; Groth-Jensen, J.; Hansen, J.D.; Klinkby, E.; Muresan, R.; Petersen, B.A.; Xella-Hansen, S.; Deppe, H.; Dreis, H.B.; Eisele, F.; Feuerstack-Raible, M.; Gradl, S.; Gradl, W.; Hott, T.; Kessler, J.; Krauss, C.; Rick, H.; Uwer, U.; Dong, X.; Jiang, C.; Zheng, Z.; Garrido, Ll.; Peralta, D.; Glaess, J.; Maenner, R.; Wurz, A.; Gorbounov, I.; Zeuner, T.; Gorisek, A.; Kupper, S.; Pestotnik, R.; Staric, M.; Zivko, T.; Goulart, D.C.; Schwartz, A.J.; Ispiryan, M.; Lau, K.; Pyrlik, J.; Subramania, H.S.; Kapitza, H.; Symalla, M.; Eldik, C. van; Karabekyan, S.; Pernack, R.; Schroeder, H.; Zimmermann, R.; Kolanoski, H.; Kruecker, D.; Lohse, T.; Medin, G.; Nedden, M. zur; Stegmann, C.; Korpar, S.; Kreuzer, P.; Krizan, P.; Stanovnik, A.; Pose, D.; Robmann, P.; Shuvalov, S.; Spiridonov, A.; Tsakov, I.; Vukotic, I.; Wahlberg, H.; Wang, J.J.; Zavertyaev, M.

2009-01-01

Inclusive doubly differential cross sections d 2 σ pA /dx F dp T 2 as a function of Feynman-x(x F ) and transverse momentum (p T ) for the production of K S 0 , Λ and anti Λ in proton-nucleus interactions at 920 GeV are presented. The measurements were performed by HERA-B in the negative x F range (-0.12 F T =1.6 GeV/c. Results for three target materials: carbon, titanium and tungsten are given. The ratios of production cross sections are presented and discussed. The Cronin effect is clearly observed for all three V 0 species. The atomic number dependence is parameterized as σ pA =σ pN .A α where σ pN is the proton-nucleon cross section. The measured values of α are all near one. The results are compared with EPOS 1.67 and PYTHIA 6.3. EPOS reproduces the data to within ∼20% except at very low transverse momentum. (orig.)

Total cross section for hadron production by e+e--annihilation at center of mass energies between 3.6 and 5.2 GeV

International Nuclear Information System (INIS)

Brandelik, R.; Braunschweig, W.; Ludwig, J.; Mess, K.H.; Orito, S.; Suda, T.; Tokyo Univ.

1978-03-01

The total cross section for e + e - annihilation into hadronic final states between 3.6 and 5.2 GeV was measured by the nonmagnetic inner detector of DASP, which has similar trigger and detection efficeincies for photons and charged particles. The measured difference in R = sigmasub(had)/sigmasub(μμ) between 3.6 GeV and 5.2 GeV is ΔR = 2.1 +- 0.3. We observe three peaks at cm energies of 4.04, 4.16 and 4.417 GeV, the parameters of which, when interpreted as resonances, are given. (orig.) [de

New aspects in nucleon-nucleus collisions and EAS properties around 10(6) GeV

International Nuclear Information System (INIS)

Capdevielle, J.N.; Gawin, J.

1985-01-01

At energies higher than 2 x 10 to the 5 GeV, very little information exists on detailed properties of nucleon-nucleon collision; the rare elements are coming from jets and as nondirect improvements from gamma-ray families. The results exhibit some conflicting features, or at least, very large fluctuations like copious production of gamma rays in opposition to Centauro-like events, which suggest that phase transition to quark-gluon plasma occurs in nucleus-nucleus collisions and even in nucleon-nucleus collision. The multicluster phenomenological model (MPM) is extrapolated for EAS simulation up to 5 x 10 to the 6 GeV to put in evidence some significant deviation between experimental data and prediction

Evidence for a narrow peak in K0sub(s)π+-π+π- at 2.6 GeV in 12 GeV/c anti pp interactions

International Nuclear Information System (INIS)

Apostolakis, A.; Casali, R.; Caso, C.; Goldschmidt-Clermont, Y.; Pape, L.; Porte, J.P.; Stergiou, A.; Tallini, B.; Vassiliadis, G.; Wenninger, H.; Grard, G.; Henri, V.P.; Herquet, P.; Kesteman, J.; Banerjee, S.; Barnham, K.W.J.; Beuselinck, R.; Butterworth, I.; Campbell, J.R.; Chaff, J.; Mermikides, M.E.; Miller, D.B.; Bertrand, D.; Johnson, D.; Lemonne, J.; Renton, P.; Wickens, J.; Bogaert, F. van den; Daugeras, B.; Jacholkowska, A.

1977-01-01

The evidence is reported for a narrow charged peak (5.5 s.d.), which the authors suggest calling the I, in the 6-prong-V 0 topology of anti pp interactions at 12 GeV/c. The mass, width and the product of cross section sigmasub(I) times the branching ratio BR into the final state (K 0 sub(s)π +- π + π - ) are found to be: Msub(I)=2.60+-0.01 GeV/c 2 , GAMMAsub(I) 2 , sigmasub(I).BR approximately 20 μbarn. (Auth.)

Sir John Struthers (1823-1899), Professor of Anatomy in the University of Aberdeen (1863-1889), President of the Royal College of Surgeons of Edinburgh (1895-1897).

Science.gov (United States)

Kaufman, M H

2015-11-01

Between 1841 and 1845 John Struthers attended both the University of Edinburgh and some of the various Extra-mural Schools of Medicine associated with Surgeons' Hall. While a medical student he became a Member of the Hunterian Medical Society of Edinburgh and later was elected one of their Annual Presidents. He graduated with the MD Edin and obtained both the LRCS Edin and the FRCS Edin diplomas in 1845. Shortly afterwards he was invited to teach Anatomy in Dr Handyside's Extra-mural School in Edinburgh. The College of Surgeons certified him to teach Anatomy in October 1847. He had two brothers, and all three read Medicine in Edinburgh. His younger brother, Alexander, died of cholera in the Crimea in 1855 while his older brother James, who had been a bachelor all his life, practised as a Consultant Physician in Leith Hospital, Edinburgh, until his death.When associated with Dr Handyside's Extra-mural School in Edinburgh, John taught Anatomy there until he was elected to the Chair of Anatomy in Aberdeen in 1863. Much of his time was spent in Aberdeen teaching Anatomy and in upgrading the administrative facilities there. He resigned from this Chair in 1889 and subsequently was elected President of Leith Hospital from 1891 to 1897. This was in succession to his older brother, James, who had died in 1891. Later, he was elected President of the Royal College of Surgeons of Edinburgh from 1895 to 1897 and acted as its Vice-President from 1897 until his death in 1899. In 1898, Queen Victoria knighted him. His youngest son, John William Struthers, was the only one of his clinically qualified sons to survive him and subsequently was elected President of the Edinburgh College of Surgeons from 1941 to 1943. © The Author(s) 2014.

Cost competitiveness of a solar cell array power source for ATS-6 educational TV terminal

Science.gov (United States)

Masters, R. M.

1975-01-01

A cost comparison is made between a terrestrial solar cell array power system and a variety of other power sources for the ATS-6 Satellite Instructional Television Experiment (SITE) TV terminals in India. The solar array system was sized for a typical Indian location, Lahore. Based on present capital and fuel costs, the solar cell array power system is a close competitor to the least expensive alternate power system. A feasibility demonstration of a terrestrial solar cell array system powering an ATS-6 receiver terminal at Cleveland, Ohio is described.

Thermoluminescence response of Ge-, Al- and Nd- doped optical fibers by 6 MeV - electron and 6 MeV - photon irradiations

International Nuclear Information System (INIS)

Hossain, I.; Moburak, A. A.; Saeed, M.A.; Wagiran, H.; Hida, N.; Yaakob, H.N.

2015-01-01

In this paper, we report the prediction of thermoluminescence responses of Neodymium-doped SiO 2 optical fibre with various dose ranges from 0.5 Gy to 4.0 Gy by 6 MeV - electron irradiations without requirement for experimental measurements. A technique has been developed to calculate prediction of 6 MeV - electron response of Neodymium-doped SiO 2 optical fibre by observing the measured TL response of 6 MV - photon and the ratio of known measured photon/electron yield ratio distribution for Ge-doped, Al-doped optical fibre and standard TLD 100 dosimeter. The samples were kept in gelatin capsule an irradiated with 6 MV - photon at the dose range from 0.5 Gy to 4.0 Gy. Siemens model Primus 3368 linear accelerator located at Hospital Sultan Ismail, Johor Bahru has been used to deliver the photon beam to the samples. We found the average response ratio of 6 MV - photon and 6 MeV - electron in Ge-doped, Al-doped optical fibre and standard TLD-100 dosimeter are 0.83(3). Observing the measured value of 6 MV - photon irradiation this average ratio is useful to find the prediction of thermoluminescence responses by 6 MeV - electron irradiation of Neodymium-doped SiO 2 optical fibre by the requirement for experimental measurements with various dose ranges from 0.5 Gy to 4.0 Gy by 6 MV - photon irradiations.

The effect of Ge precursor on the heteroepitaxy of Ge1-x Sn x epilayers on a Si (001) substrate

Science.gov (United States)

Jahandar, Pedram; Weisshaupt, David; Colston, Gerard; Allred, Phil; Schulze, Jorg; Myronov, Maksym

2018-03-01

The heteroepitaxial growth of Ge1-x Sn x on a Si (001) substrate, via a relaxed Ge buffer, has been studied using two commonly available commercial Ge precursors, Germane (GeH4) and Digermane (Ge2H6), by means of chemical vapour deposition at reduced pressures (RP-CVD). Both precursors demonstrate growth of strained and relaxed Ge1-x Sn x epilayers, however Sn incorporation is significantly higher when using the more reactive Ge2H6 precursor. As Ge2H6 is significantly more expensive, difficult to handle or store than GeH4, developing high Sn content epilayers using the latter precursor is of great interest. This study demonstrates the key differences between the two precursors and offers routes to process optimisation which will enable high Sn content alloys at relatively low cost.

A SEARCH FOR PULSATIONS FROM GEMINGA ABOVE 100 GeV WITH VERITAS

Energy Technology Data Exchange (ETDEWEB)

Aliu, E. [Department of Physics and Astronomy, Barnard College, Columbia University, NY 10027 (United States); Archambault, S. [Physics Department, McGill University, Montreal, QC H3A 2T8 (Canada); Archer, A.; Beilicke, M.; Buckley, J. H.; Bugaev, V. [Department of Physics, Washington University, St. Louis, MO 63130 (United States); Aune, T. [Department of Physics and Astronomy, University of California, Los Angeles, CA 90095 (United States); Barnacka, A. [Harvard-Smithsonian Center for Astrophysics, 60 Garden Street, Cambridge, MA 02138 (United States); Benbow, W.; Cerruti, M. [Fred Lawrence Whipple Observatory, Harvard-Smithsonian Center for Astrophysics, Amado, AZ 85645 (United States); Bird, R. [School of Physics, University College Dublin, Belfield, Dublin 4 (Ireland); Byrum, K. [Argonne National Laboratory, 9700 South Cass Avenue, Argonne, IL 60439 (United States); Cardenzana, J. V.; Dickinson, H. J.; Eisch, J. D. [Department of Physics and Astronomy, Iowa State University, Ames, IA 50011 (United States); Chen, X. [Institute of Physics and Astronomy, University of Potsdam, D-14476 Potsdam-Golm (Germany); Ciupik, L. [Astronomy Department, Adler Planetarium and Astronomy Museum, Chicago, IL 60605 (United States); Connolly, M. P. [School of Physics, National University of Ireland Galway, University Road, Galway (Ireland); Cui, W. [Department of Physics and Astronomy, Purdue University, West Lafayette, IN 47907 (United States); Dumm, J., E-mail: mccann@kicp.uchicago.edu, E-mail: gtrichards@gatech.edu [School of Physics and Astronomy, University of Minnesota, Minneapolis, MN 55455 (United States); and others

2015-02-10

We present the results of 71.6 hr of observations of the Geminga pulsar (PSR J0633+1746) with the VERITAS very-high-energy gamma-ray telescope array. Data taken with VERITAS between 2007 November and 2013 February were phase-folded using a Geminga pulsar timing solution derived from data recorded by the XMM- Newton and Fermi-LAT space telescopes. No significant pulsed emission above 100 GeV is observed, and we report upper limits at the 95% confidence level on the integral flux above 135 GeV (spectral analysis threshold) of 4.0 × 10{sup –13} s{sup –1} cm{sup –2} and 1.7 × 10{sup –13} s{sup –1} cm{sup –2} for the two principal peaks in the emission profile. These upper limits, placed in context with phase-resolved spectral energy distributions determined from 5 yr of data from the Fermi-Large Area Telescope (LAT), constrain possible hardening of the Geminga pulsar emission spectra above ∼50 GeV.

Workshop on b-phenomenology, Edinburgh, UK, 8-14 December 1991

International Nuclear Information System (INIS)

Clarke, P.E.L.; Peach, K.J.; Richards, D.G.

1992-01-01

The frontier of understanding in heavy quark theory is moving fast. With the data emerging from LEP and from hadron facilities on heavy hadrons, and the developing interest in a custom-built B-factory, there is a need for detailed interaction among experimentalists and phenomenologically motivated theorists on the physics of b-quarks and B hadrons. To this end a workshop on heavy flavour physics was held at the University of Edinburgh from 8-14 December 1991. (Author)

Recent Activities Of The World Data Centre For Geomagnetism (Edinburgh)

OpenAIRE

Reay, Sarah; Humphries, Tom; Macmillan, Susan; Flower, Simon; Stevenson, Peter; Clarke, Ellen

2015-01-01

For almost 50 years the World Data Centre for Geomagnetism (Edinburgh) has been a custodian of geomagnetic data. In particular, over recent years the scope of the data holdings has been increased, quality control measures introduced and better interfaces to make the data more accessible to users are being developed. The WDC hold geomagnetic time-series data from around 280 observatories worldwide at a number of time resolutions along with various magnetic survey, model, and geomagnetic ac...

History of dyspepsia in Scotland. Admissions to the Edinburgh Royal Infirmary 1729-1830, doctoral theses 1726-1823, and contemporary British publications.

Science.gov (United States)

Baron, J H; Sonnenberg, A

2008-08-01

The aim of the study was to assess whether the rise in the occurrence of dyspepsia in Scotland during the eighteenth century was a true epidemiologic phenomenon or just an increase in medical awareness. Admissions for dyspepsia to the Edinburgh Royal Infirmary from 1729 until 1830 were analysed by consecutive five-year time periods. The titles of MD theses on dyspepsia from 1726 to 1823 were extracted from the Edinburgh University index. Monographs and articles on dyspepsia from Britain during the same time period were sought in the Catalogues of the US Surgeon-General's Library. During the eighteenth century, the annual number of dyspepsia patients admitted to the Edinburgh Royal Infirmary showed an extraordinary increase from none in 1730 to 900 per million population in 1760. About 4000 MD theses were presented to the Edinburgh University between 1726 and 1823. There were none on dyspepsia or gastritis between 1726 and 1749, after when it gradually started to rise. British publications on dyspepsia similarly appeared only in the 1790s and then rapidly increased. We suggest that the rise in MD theses and publications on dyspepsia were responses to a real increase in dyspepsia during the mid eighteenth century.

γ production and neutron inelastic scattering cross sections for 76Ge

Science.gov (United States)

Rouki, C.; Domula, A. R.; Drohé, J. C.; Koning, A. J.; Plompen, A. J. M.; Zuber, K.

2013-11-01

The 2040.7-keV γ ray from the 69th excited state of 76Ge was investigated in the interest of Ge-based double-β-decay experiments like the Germanium Detector Array (GERDA) experiment. The predicted transition could interfere with valid 0νββ events at 2039.0 keV, creating false signals in large-volume 76Ge enriched detectors. The measurement was performed with the Gamma Array for Inelastic Neutron Scattering (GAINS) at the Geel Electron Linear Accelerator (GELINA) white neutron source, using the (n,n'γ) technique and focusing on the strongest γ rays originating from the level. Upper limits obtained for the production cross section of the 2040.7-keV γ ray showed no possible influence on GERDA data. Additional analysis of the data yielded high-resolution cross sections for the low-lying states of 76Ge and related γ rays, improving the accuracy and extending existing data for five transitions and five levels. The inelastic scattering cross section for 76Ge was determined for incident neutron energies up to 2.23 MeV, significantly increasing the energy range for which experimental data are available. Comparisons with model calculations using the talys code are presented indicating that accounting for the recently established asymmetric rotor structure should lead to an improved description of the data.

Measurements of T20 in backward elastic d p scattering at deuteron momenta 3.5 - 6 GeV/c

International Nuclear Information System (INIS)

Azhgirej, L.S.; Borzunov, Yu.T.; Chernykh, E.V.

1994-01-01

We present results of measurements of the tensor analyzing power T 20 in d p backward elastic scattering at initial deuterons momenta 3.5-6.0 GeV/c, which corresponds to the range of internal momentum of the deuteron constituents k = 0.5 - 0.8 GeV/c. New structure was observed at k = 0.65 GeV/c. Difference between behavior of T 20 for d p backward elastic scattering and for breakup reaction, which have a smooth behavior of T 20 at high k, is discussed. 12 refs.; 3 figs. (author)

Coulomb-nuclear interference in the inelastic scattering of 6Li on 76Ge

International Nuclear Information System (INIS)

Zhang, X X; Rodrigues, M R D; Borello-Lewin, T; Rodrigues, C L; Benevides, L R B; Duarte, J L M; Horodynski-Matsushigue, L B; Ukita, G M

2015-01-01

Angular distribution for the inelastic scattering of 28 MeV 6 Li on 76 Ge was measured using the Sao Paulo PelletronEngeSplit-pole Spectrograph facility. The coulomb-nuclear interference (CNI) analysis was applied to the first quadrupole state transition. The values of C L = δ C L /δ N L , the ratio of charge to isoscalardeformation lengths, and of (δ N L 0 2 were extracted through the comparison of experimental and DWBA-DOMP predicted cross section. The ratio of reduced charge to isoscalartransition probabilities, B(EL) to B(ISL) respectively, are related to the square of the parameter C L and were thus obtained with the advantage of scale uncertainties cancellation. The value of C 2 = 1.10(2) obtained indicate a slight predominance of the protons relative to the neutrons for 76 Ge. (paper)

Precision measurements of g1 of the proton and of the deuteron with 6 GeV electrons

Science.gov (United States)

Prok, Y.; Bosted, P.; Kvaltine, N.; Adhikari, K. P.; Adikaram, D.; Aghasyan, M.; Amaryan, M. J.; Anderson, M. D.; Anefalos Pereira, S.; Avakian, H.; Baghdasaryan, H.; Ball, J.; Baltzell, N. A.; Battaglieri, M.; Biselli, A. S.; Bono, J.; Briscoe, W. J.; Brock, J.; Brooks, W. K.; Bültmann, S.; Burkert, V. D.; Carlin, C.; Carman, D. S.; Celentano, A.; Chandavar, S.; Colaneri, L.; Cole, P. L.; Contalbrigo, M.; Cortes, O.; Crabb, D.; Crede, V.; D'Angelo, A.; Dashyan, N.; De Vita, R.; De Sanctis, E.; Deur, A.; Djalali, C.; Dodge, G. E.; Doughty, D.; Dupre, R.; El Alaoui, A.; El Fassi, L.; Elouadrhiri, L.; Fedotov, G.; Fegan, S.; Fersch, R.; Fleming, J. A.; Forest, T. A.; Garçon, M.; Garillon, B.; Gevorgyan, N.; Ghandilyan, Y.; Gilfoyle, G. P.; Girod, F. X.; Giovanetti, K. L.; Goetz, J. T.; Gohn, W.; Gothe, R. W.; Griffioen, K. A.; Guegan, B.; Guler, N.; Hafidi, K.; Hanretty, C.; Harrison, N.; Hattawy, M.; Hicks, K.; Ho, D.; Holtrop, M.; Ilieva, Y.; Ireland, D. G.; Ishkhanov, B. S.; Isupov, E. L.; Jawalkar, S.; Jiang, X.; Jo, H. S.; Joo, K.; Kalantarians, N.; Keith, C.; Keller, D.; Khandaker, M.; Kim, A.; Kim, W.; Klein, A.; Klein, F. J.; Koirala, S.; Kubarovsky, V.; Kuhn, S. E.; Kuleshov, S. V.; Lenisa, P.; Livingston, K.; Lu, H. Y.; MacGregor, I. J. D.; Markov, N.; Mayer, M.; McKinnon, B.; Meekins, D.; Mineeva, T.; Mirazita, M.; Mokeev, V.; Montgomery, R. A.; Moutarde, H.; Movsisyan, A.; Munevar, E.; Munoz Camacho, C.; Nadel-Turonski, P.; Niccolai, S.; Niculescu, G.; Niculescu, I.; Osipenko, M.; Ostrovidov, A. I.; Pappalardo, L. L.; Paremuzyan, R.; Park, K.; Peng, P.; Phillips, J. J.; Pierce, J.; Pisano, S.; Pogorelko, O.; Pozdniakov, S.; Price, J. W.; Procureur, S.; Protopopescu, D.; Puckett, A. J. R.; Raue, B. A.; Rimal, D.; Ripani, M.; Rizzo, A.; Rosner, G.; Rossi, P.; Roy, P.; Sabatié, F.; Saini, M. S.; Salgado, C.; Schott, D.; Schumacher, R. A.; Seder, E.; Sharabian, Y. G.; Simonyan, A.; Smith, C.; Smith, G.; Sober, D. I.; Sokhan, D.; Stepanyan, S. S.; Stepanyan, S.; Strakovsky, I. I.; Strauch, S.; Sytnik, V.; Taiuti, M.; Tang, W.; Tkachenko, S.; Ungaro, M.; Vernarsky, B.; Vlassov, A. V.; Voskanyan, H.; Voutier, E.; Walford, N. K.; Watts, D. P.; Weinstein, L. B.; Zachariou, N.; Zana, L.; Zhang, J.; Zhao, B.; Zhao, Z. W.; Zonta, I.; CLAS Collaboration

2014-08-01

The inclusive polarized structure functions of the proton and deuteron, g1p and g1d, were measured with high statistical precision using polarized 6 GeV electrons incident on a polarized ammonia target in Hall B at Jefferson Laboratory. Electrons scattered at laboratory angles between 18 and 45 degrees were detected using the CEBAF Large Acceptance Spectrometer (CLAS). For the usual deep inelastic region kinematics, Q2>1 GeV2 and the final-state invariant mass W >2 GeV, the ratio of polarized to unpolarized structure functions g1/F1 is found to be nearly independent of Q2 at fixed x. Significant resonant structure is apparent at values of W up to 2.3 GeV. In the framework of perturbative quantum chromodynamics, the high-W results can be used to better constrain the polarization of quarks and gluons in the nucleon, as well as high-twist contributions.

Performance of the Broadband Golay 3x6 Array Associated with the 2016 IRIS Community Wavefields Experiment

Science.gov (United States)

Bolarinwa, O. J.; Langston, C. A.; Sweet, J. R.; Anderson, K. R.; Woodward, R.

2017-12-01

A 6 km aperture regional array in the Golay 3x6 configuration was fielded as part of the IRIS Community Wavefields Experiment near Enid, Oklahoma from June 26 through November 12, 2016. The array consisted of 18 broadband CMG-3T seismometers deployed using a PASSCAL insulated vault design and RT130 data recorders. The Golay geometry is unusual in that it features 6 tripartite arrays in an open arrangement. Spacing and orientation of each tripartite array is such that the array uniformly samples the wavefield in space as determined from the co-array diagram even though the interior of the array configuration contains no seismic stations. The short wavelength performance of this array requires a high degree of phase correlation across its entire aperture, a characteristic that has been difficult to achieve for other regional array designs because of velocity heterogeneity in the earth. Located within an area of high regional seismicity, the IRIS experiment offered an opportunity to examine the slowness-frequency performance of a real-world Golay 3x6 array that was subject to constraints on land usage during deployment. Individual tripartite arrays fit well within a land survey quarter section but it proved difficult to match the ideal spacing between each subarray because of permitting problems. Nevertheless, these unavoidable geometry perturbations caused only minor changes to the theoretical array response. More surprisingly, observations of high frequency regional P and S phases show very high correlation over the array aperture that gives rise to precise array responses that are close to theoretical. Both the array geometry and relatively homogeneous structure under the array produces an exceptional facility that can be used for high-resolution studies of regional seismic waves.

Homogeneity of Ge-rich nanostructures as characterized by chemical etching and transmission electron microscopy

International Nuclear Information System (INIS)

Bollani, Monica; Chrastina, Daniel; Montuori, Valeria; Vanacore, Giovanni M; Tagliaferri, Alberto; Sordan, Roman; Terziotti, Daniela; Bonera, Emiliano; Spinella, Corrado; Nicotra, Giuseppe

2012-01-01

The extension of SiGe technology towards new electronic and optoelectronic applications on the Si platform requires that Ge-rich nanostructures be obtained in a well-controlled manner. Ge deposition on Si substrates usually creates SiGe nanostructures with relatively low and inhomogeneous Ge content. We have realized SiGe nanostructures with a very high (up to 90%) Ge content. Using substrate patterning, a regular array of nanostructures is obtained. We report that electron microscopy reveals an abrupt change in Ge content of about 20% between the filled pit and the island, which has not been observed in other Ge island systems. Dislocations are mainly found within the filled pit and only rarely in the island. Selective chemical etching and electron energy-loss spectroscopy reveal that the island itself is homogeneous. These Ge-rich islands are possible candidates for electronic applications requiring locally induced stress, and optoelectronic applications which exploit the Ge-like band structure of Ge-rich SiGe. (paper)

Homogeneity of Ge-rich nanostructures as characterized by chemical etching and transmission electron microscopy.

Science.gov (United States)

Bollani, Monica; Chrastina, Daniel; Montuori, Valeria; Terziotti, Daniela; Bonera, Emiliano; Vanacore, Giovanni M; Tagliaferri, Alberto; Sordan, Roman; Spinella, Corrado; Nicotra, Giuseppe

2012-02-03

The extension of SiGe technology towards new electronic and optoelectronic applications on the Si platform requires that Ge-rich nanostructures be obtained in a well-controlled manner. Ge deposition on Si substrates usually creates SiGe nanostructures with relatively low and inhomogeneous Ge content. We have realized SiGe nanostructures with a very high (up to 90%) Ge content. Using substrate patterning, a regular array of nanostructures is obtained. We report that electron microscopy reveals an abrupt change in Ge content of about 20% between the filled pit and the island, which has not been observed in other Ge island systems. Dislocations are mainly found within the filled pit and only rarely in the island. Selective chemical etching and electron energy-loss spectroscopy reveal that the island itself is homogeneous. These Ge-rich islands are possible candidates for electronic applications requiring locally induced stress, and optoelectronic applications which exploit the Ge-like band structure of Ge-rich SiGe.

Securing Australia – for SIVs, from SIEVs, via Edinburgh Gardens NYE

Directory of Open Access Journals (Sweden)

Pete Chambers

2016-03-01

Full Text Available Edinburgh Gardens is the crown jewel of Fitzroy North, one of inner northern Melbourne’s most gentrified suburbs. In 2009, Christian Lander, author of Stuff White People Like, dubbed Fitzroy North Melbourne’s whitest suburb. In January 2015, the median house price hit $1,050,000, a far cry from Chopper Reid’s stomping ground and the setting of precarious 70s student lives in Monkey Grip.

Disentangling nonradiative recombination processes in Ge micro-crystals on Si substrates

Energy Technology Data Exchange (ETDEWEB)

Pezzoli, Fabio, E-mail: fabio.pezzoli@unimib.it; Giorgioni, Anna; Gatti, Eleonora; Grilli, Emanuele; Bonera, Emiliano; Miglio, Leo [LNESS and Dipartimento di Scienza dei Materiali, Università degli Studi di Milano-Bicocca, via Cozzi 55, I-20125 Milano (Italy); Gallacher, Kevin; Millar, Ross W.; Paul, Douglas J. [School of Engineering, University of Glasgow, Rankine Building, Oakfield Avenue, Glasgow G12 8LT (United Kingdom); Isa, Fabio [LNESS, Dipartimento di Fisica del Politecnico di Milano and IFN-CNR, Polo Territoriale di Como, Via Anzani 42, I-22100 Como (Italy); Laboratory for Solid State Physics, ETH Zurich, Otto-Stern-Weg 1, CH-8093 Zürich (Switzerland); Biagioni, Paolo [LNESS, Dipartimento di Fisica del Politecnico di Milano and IFN-CNR, Piazza Leonardo da Vinci 32, I-20133 Milano (Italy); Isella, Giovanni [LNESS, Dipartimento di Fisica del Politecnico di Milano and IFN-CNR, Polo Territoriale di Como, Via Anzani 42, I-22100 Como (Italy)

2016-06-27

We address nonradiative recombination pathways by leveraging surface passivation and dislocation management in μm-scale arrays of Ge crystals grown on deeply patterned Si substrates. The time decay photoluminescence (PL) at cryogenic temperatures discloses carrier lifetimes approaching 45 ns in band-gap engineered Ge micro-crystals. This investigation provides compelling information about the competitive interplay between the radiative band-edge transitions and the trapping of carriers by dislocations and free surfaces. Furthermore, an in-depth analysis of the temperature dependence of the PL, combined with capacitance data and finite difference time domain modeling, demonstrates the effectiveness of GeO{sub 2} in passivating the surface of Ge and thus in enhancing the room temperature PL emission.

Disentangling nonradiative recombination processes in Ge micro-crystals on Si substrates

International Nuclear Information System (INIS)

Pezzoli, Fabio; Giorgioni, Anna; Gatti, Eleonora; Grilli, Emanuele; Bonera, Emiliano; Miglio, Leo; Gallacher, Kevin; Millar, Ross W.; Paul, Douglas J.; Isa, Fabio; Biagioni, Paolo; Isella, Giovanni

2016-01-01

We address nonradiative recombination pathways by leveraging surface passivation and dislocation management in μm-scale arrays of Ge crystals grown on deeply patterned Si substrates. The time decay photoluminescence (PL) at cryogenic temperatures discloses carrier lifetimes approaching 45 ns in band-gap engineered Ge micro-crystals. This investigation provides compelling information about the competitive interplay between the radiative band-edge transitions and the trapping of carriers by dislocations and free surfaces. Furthermore, an in-depth analysis of the temperature dependence of the PL, combined with capacitance data and finite difference time domain modeling, demonstrates the effectiveness of GeO_2 in passivating the surface of Ge and thus in enhancing the room temperature PL emission.

Disentangling nonradiative recombination processes in Ge micro-crystals on Si substrates

Science.gov (United States)

Pezzoli, Fabio; Giorgioni, Anna; Gallacher, Kevin; Isa, Fabio; Biagioni, Paolo; Millar, Ross W.; Gatti, Eleonora; Grilli, Emanuele; Bonera, Emiliano; Isella, Giovanni; Paul, Douglas J.; Miglio, Leo

2016-06-01

We address nonradiative recombination pathways by leveraging surface passivation and dislocation management in μm-scale arrays of Ge crystals grown on deeply patterned Si substrates. The time decay photoluminescence (PL) at cryogenic temperatures discloses carrier lifetimes approaching 45 ns in band-gap engineered Ge micro-crystals. This investigation provides compelling information about the competitive interplay between the radiative band-edge transitions and the trapping of carriers by dislocations and free surfaces. Furthermore, an in-depth analysis of the temperature dependence of the PL, combined with capacitance data and finite difference time domain modeling, demonstrates the effectiveness of GeO2 in passivating the surface of Ge and thus in enhancing the room temperature PL emission.

Single crystal growth and structure refinements of CsMxTe2-xO6 (M = Al, Ga, Ge, In) pyrochlores

International Nuclear Information System (INIS)

Siritanon, Theeranun; Sleight, A.W.; Subramanian, M.A.

2011-01-01

Graphical abstract: Single crystals of CsM x Te 2-x O 6 pyrochlores with M = Al, Ga, Ge, and In have been grown and structure refinements indicate deviations from ideal stoichiometry presumably related to mixed valency of tellurium. Highlights: → Single crystals of CsM x Te 2-x O 6 pyrochlores with M = Al, Ga, Ge, and In have been grown. → Structure refinements from single crystal X-ray diffraction data confirm e structure. → Deviations from ideal stoichiometry suggest mixed valency of tellurium and hence conductivity. -- Abstract: Single crystals of CsM x Te 2-x O 6 pyrochlores with M = Al, Ga, Ge, and In have been grown from a TeO 2 flux. Structure refinements from single crystal X-ray diffraction data are reported. These results are used to discuss deviations from ideal stoichiometry that result in electronic conductivity presumably related to mixed valency of tellurium.

Far forward scattering on TOSCA tokamak using a detector array

International Nuclear Information System (INIS)

Cote, A.; Evans, D.E.

1987-01-01

A gaussian beam from a CW CO 2 , laser is directed across the vertical minor diameter of TOSCA tokamak where it undergoes collective scattering at angles within the beam divergence. Scattered radiation recombines with the unperturbed part of the beam on the detector, generating intensity oscillations whose spatial, temporal, and phase distributions convey information about the strength, scale length, frequency, and propagation direction of the plasma density fluctuations in which they originate. The distribution of these oscillations is measured across the diameter of the probe beam profile, either with a single photoconductive Ge:Hg detector over a sequence of plasma discharges, or with a 12-channel array of Ge:Hg detectors during a single discharge. A model describing counter-rotating waves, such as a poloidal structure encountered twice by the probe beam as it traverses the plasma, is able to furnish a satisfactory fit to the data. Use of the array provides a phase distribution from which the sense of rotation of the waves can be deduced. A dispersion relation with frequencies up to 250 kHz, wavenumbers in the range 60-300 m -1 , and a phase velocity of ≅ 6x10 3 ms -1 is found

Negative binomial fits to multiplicity distributions from central collisions of 16O + Cu at 14.6A GeV/c and intermittency

International Nuclear Information System (INIS)

Tannenbaum, M.J.

1994-01-01

An 'intermittency' analysis of charged particle multiplicity data from the target multiplicy array (TMA) in central collisions of 16 O+Cu at 14.6 AxGeV/c has been published by the AGS-E802 collaboration. The centrality cut was made using the Zero degree Calorimeter and requiring that the forward energy be less than one projectile nucleon (i.e. T ZCAL 16 O+Cu collisions is found to exhibit an apparently linear increase with the δη interval, albeit with a much steeper slope than for the other reactions, and a non-zero intercept, k(0)≠0. True intermittency, ξ→0, would occur if the intercept k(0)→0, which is not observed in any experiment. The correlation length for central 16 O+Cu collisions, although smaller than expected, is quite finite and can be measured - which means that a length scale exists in these collisions and therefore there is no intermittency in the multiplicity fluctuations

Systematic study of Si-based GeSn photodiodes with 2.6 µm detector cutoff for short-wave infrared detection.

Science.gov (United States)

Pham, Thach; Du, Wei; Tran, Huong; Margetis, Joe; Tolle, John; Sun, Greg; Soref, Richard A; Naseem, Hameed A; Li, Baohua; Yu, Shui-Qing

2016-03-07

Normal-incidence Ge 1-x Sn x photodiode detectors with Sn compositions of 7 and 10% have been demonstrated. Such detectors were based on Ge/Ge 1-x Sn x /Ge double heterostructures grown directly on a Si substrate via a chemical vapor deposition system. A temperature-dependence study of these detectors was conducted using both electrical and optical characterizations from 300 to 77 K. Spectral response up to 2.6 µm was achieved for a 10% Sn device at room temperature. The peak responsivity and specific detectivity (D*) were measured to be 0.3 A/W and 4 × 10 9 cmHz 1/2 W -1 at 1.55 µm, respectively. The spectral D* of a 7% Sn device at 77 K was only one order-of-magnitude lower than that of an extended-InGaAs photodiode operating in the same wavelength range, indicating the promising future of GeSn-based photodetectors.

Charged particle spectra in oxygen-induced reactions at 14. 6 and 60 GeV/Nucleon

Energy Technology Data Exchange (ETDEWEB)

Adamovich, M I; Aggarwal, M M; Arora, R; Alexandrov, Y A; Azimov, S A; Badyal, S K; Basova, E; Bhalla, K B; Bahsin, A; Bhatia, V S; Bomdarenko, R A; Burnett, T H; Cai, X; Chernova, L P; Chernyavski, M M; Dressel, B; Friedlander, E M; Gadzhieva, S I; Ganssauge, E R; Garpman, S; Gerassimov, S G; Gill, A; Grote, J; Gulamov, K G; Gulyamov, V G; Gupta, V K; Hackel, S; Heckman, H H; Jakobsson, B; Judek, B; Katroo, S; Kadyrov, F G; Kallies, H; Karlsson, L; Kaul, G L; Kaur, M; Kharlamov, S P; Kohli, J; Kumar, V; Lal, P; Larionova, V G; Lindstrom, P J; Liu, L S; Lokanathan, S; Lord, J; Lukicheva, N S; Mangotra, L K; Maslennikova, N V; Mitta, I S; Monnand, E; Mookerjee, S; Mueller, C; Nasyrov, S H; Nvtny, V S; Orlova, G I; Otterlund, I; Peresadko, N G; Persson, S; Petrov, N V; Qian, W Y; Raniwala, R; Raniwala, S; Rao, N K; Rhee, J Y; Shaidkhanov, N; Salmanova, N G; Schulz, W; Schussler, F; Shukla, V S; Skelding, D; Soederstroe,

1989-10-01

Multiplicity distributions and pseudo-rapidity distributions of charged particles from oxygen-induced nuclear reactions at 14.6 and 60 GeV/nucleon are presented. The data were taken from the EMU{minus}01 emulsion stacks and compared to simulations from the Lund Monte Carlo Model (FRITIOF).

Dr Charles Morehead MD (Edinburgh), FRCP (1807-1882): Pioneer in medical education.

Science.gov (United States)

Pandya, Sunil K

2015-05-01

Charles Morehead studied medicine in Edinburgh and Paris. Among his teachers were George Jardine (1742-1827) (moral philosophy), Professor William Pulteney Alison (1790-1859) (medicine), Pierre Louis (1787-1872) and René Laennec (1781-1826). He joined as Assistant Surgeon in the Bombay Medical Service of the East India Company and was appointed to the staff of Governor Sir Robert Grant (1779-1838). Grant and Morehead founded the Grant Medical College and Sir Jamsetjee Jejeebhoy (1811-1877) Hospital in Bombay. Morehead established standards of medical education at these institutions far superior to those in Calcutta and Madras and, in some ways, to those in Britain. His emphasis on discipline, regular attendance, learning medicine at the bedside, the maintenance of detailed records on all patients and thorough evaluation of the progress made by students were salutary. While in London to recover his health, he wrote his classic book Clinical Researches on Disease in India for Indian doctors and those from Britain entering the Indian Medical Services. He lived in Edinburgh after retirement from India but continued to help teachers and students at his institutions in Bombay. © The Author(s) 2015 Reprints and permissions: sagepub.co.uk/journalsPermissions.nav.

The singlet-triplet energy gap in divalent three, five and seven-membered cyclic C2H2M, C4H4M and C6H6M (M = C, Si, Ge, Sn AND Pb

Directory of Open Access Journals (Sweden)

E. Vessally

2009-08-01

Full Text Available Total energy gaps, ∆Et–s, enthalpy gaps, ∆Ht–s, and Gibbs free energy gaps, ∆Gt–s, between singlet (s and triplet (t states were calculated for three, five and seven-membered cyclic C2H2M, C4H4M and C6H6M (M = C, Si, Ge, Sn and Pb at B3LYP/6-311++G**. The singlet-triplet free energy gaps, ∆Gt–s, for C2H2M (M = C, Si, Ge, Sn and Pb are found to be increased in the order: C2H2Si > C2H2C > C2H2Ge > C2H2Sn > C2H2Pb. The ∆Gt–s of C4H4M are found to be increased in the order: C4H4Pb > C4H4Sn > C4H4Ge > C4H4Si > C4H4C. Also, the ∆Gt–s of C6H6M are determined in the order: C6H6Pb > C6H6Ge ≥ C6H6Sn > C6H6Si > C6H6C. The most stable conformers of C2H2M, C4H4M and C6H6M are proposed for both the singlet and triplet states. Nuclear independent chemical shifts (NICS calculations were carried out for determination of aromatic character. The geometrical parameters are calculated and discussed.

Study of a 3×3 module array of the ECAL0 calorimeter with an electron beam at the ELSA

Science.gov (United States)

Dziewiecki, M.; Anfimov, N.; Anosov, V.; Barth, J.; Chalyshev, V.; Chirikov-Zorin, I.; Elsner, D.; Frolov, V.; Frommberger, F.; Guskov, A.; Klein, F.; Krumshteyn, Z.; Kurjata, R.; Marzec, J.; Nagaytsev, A.; Olchevski, A.; Orlov, I.; Rybnikov, A.; Rychter, A.; Selyunin, A.; Zaremba, K.; Ziembicki, M.

2015-02-01

ECAL0 is a new electromagnetic calorimeter designed for studying generalized parton distributions at the COMPASS II experiment at CERN. It will be located next to the target and will cover larger photon angles (up to 30 degrees). It is a modular high-granularity Shashlyk device with total number of individual channels of approx. 1700 and readout based on wavelength shifting fibers and micropixel avalanche photodiodes. Characterization of the calorimeter includes tests of particular sub-components, tests of complete modules and module arrays, as well as a pilot run of a fully-functional, quarter-size prototype in the COMPASS experiment. The main goals of the tests on low-intensity electron beam at the ELSA accelerator in Bonn were: to provide energy calibration using electrons, to measure angular response of the calorimeter and to perform an energy scan to cross-check previously collected data. A dedicated measurement setup was prepared for the tests, including a 3x3 array of the ECAL0 modules, a scintillating-fibre hodoscope and a remotely-controlled motorized movable platform. The measurements were performed using three electron energies: 3.2 GeV, 1.6 GeV and 0.8 GeV. They include a calibration of the whole detector array with a straight beam and multiple angular scans.

Study of a 3×3 module array of the ECAL0 calorimeter with an electron beam at the ELSA

International Nuclear Information System (INIS)

Dziewiecki, M; Kurjata, R; Marzec, J; Rychter, A; Anfimov, N; Anosov, V; Chalyshev, V; Chirikov-Zorin, I; Frolov, V; Guskov, A; Krumshteyn, Z; Nagaytsev, A; Olchevski, A; Orlov, I; Rybnikov, A; Selyunin, A; Barth, J; Elsner, D; Frommberger, F; Klein, F

2015-01-01

ECAL0 is a new electromagnetic calorimeter designed for studying generalized parton distributions at the COMPASS II experiment at CERN. It will be located next to the target and will cover larger photon angles (up to 30 degrees). It is a modular high-granularity Shashlyk device with total number of individual channels of approx. 1700 and readout based on wavelength shifting fibers and micropixel avalanche photodiodes. Characterization of the calorimeter includes tests of particular sub-components, tests of complete modules and module arrays, as well as a pilot run of a fully-functional, quarter-size prototype in the COMPASS experiment. The main goals of the tests on low-intensity electron beam at the ELSA accelerator in Bonn were: to provide energy calibration using electrons, to measure angular response of the calorimeter and to perform an energy scan to cross-check previously collected data. A dedicated measurement setup was prepared for the tests, including a 3x3 array of the ECAL0 modules, a scintillating-fibre hodoscope and a remotely-controlled motorized movable platform. The measurements were performed using three electron energies: 3.2 GeV, 1.6 GeV and 0.8 GeV. They include a calibration of the whole detector array with a straight beam and multiple angular scans

A proposal for a new Brazilian six-item version of the Edinburgh Postnatal Depression Scale

Directory of Open Access Journals (Sweden)

Maicon Rodrigues Albuquerque

Full Text Available Abstract Introduction: Factor analysis of the Edinburgh Postnatal Depression Scale (EPDS could result in a shorter and easier to handle screening tool. Therefore, the aim of this study was to check and compare the metrics of two different 6-item EPDS subscales. Methods: We administered the EPDS to a total of 3,891 women who had given birth between 1 and 3 months previously. We conducted confirmatory and exploratory factor analyses and plotted receiver-operating characteristics (ROC curves to, respectively, determine construct validity, scale items' fit to the data, and ideal cutoff scores for the short versions. Results: A previously defined 6-item scale did not exhibit construct validity for our sample. Nevertheless, we used exploratory factor analysis to derive a new 6-item scale with very good construct validity. The area under the ROC curve of the new 6-item scale was 0.986 and the ideal cutoff score was ≥ 6. Conclusions: The new 6-item scale has adequate psychometric properties and similar ROC curve values to the10-item version and offers a means of reducing the cost and time taken to administer the instrument.

GeSn Based Near and Mid Infrared Heterostructure Detectors

Science.gov (United States)

2018-02-07

prestigious journals. 15.  SUBJECT TERMS Plasmonic Enhancement, Metal Nanostructures, CMOS, Photodetectors, Germanium-Tin Diode, IR Focal Plane Array...following features: (1) ease of manufacture in a foundry via a simple epitaxial structure, (2) end- fire coupling into on-chip transparent Ge or Si

Study of the production of heavy leptons in the energy range of 9.4-31.6 GeV

International Nuclear Information System (INIS)

Meyer, O.

1981-02-01

The production of tau-pairs has been studied with the magnetic detector PLUTO at the storage rings DORIS and PETRA. Data are presented for values of centre of mass energy between 9.4 and 31.6 GeV. The measured cross section is found to be in good agreement with the predictions of QED. The lower limits for the cutoff parameters Λsub(+) > 79 GeV and Λsub(-) > 63 GeV (95% CL) are determined. This corresponds to a test of the pointlike nature of the tau down to distances of r -16 cm. The branching ratios for tau decay have been determined and are consistent with the world averages and with the theoretical predictions. A search has been made for the production of a new sequential heavy lepton. A lower limit of 14.5 GeV/c 2 for the mass of a new charged lepton with standard decay modes has been obtained with 95% CL. (orig.) [de

Results on Neutrinoless Double-β Decay of Ge76 from Phase I of the GERDA Experiment

Science.gov (United States)

Agostini, M.; Allardt, M.; Andreotti, E.; Bakalyarov, A. M.; Balata, M.; Barabanov, I.; Barnabé Heider, M.; Barros, N.; Baudis, L.; Bauer, C.; Becerici-Schmidt, N.; Bellotti, E.; Belogurov, S.; Belyaev, S. T.; Benato, G.; Bettini, A.; Bezrukov, L.; Bode, T.; Brudanin, V.; Brugnera, R.; Budjáš, D.; Caldwell, A.; Cattadori, C.; Chernogorov, A.; Cossavella, F.; Demidova, E. V.; Domula, A.; Egorov, V.; Falkenstein, R.; Ferella, A.; Freund, K.; Frodyma, N.; Gangapshev, A.; Garfagnini, A.; Gotti, C.; Grabmayr, P.; Gurentsov, V.; Gusev, K.; Guthikonda, K. K.; Hampel, W.; Hegai, A.; Heisel, M.; Hemmer, S.; Heusser, G.; Hofmann, W.; Hult, M.; Inzhechik, L. V.; Ioannucci, L.; Janicskó Csáthy, J.; Jochum, J.; Junker, M.; Kihm, T.; Kirpichnikov, I. V.; Kirsch, A.; Klimenko, A.; Knöpfle, K. T.; Kochetov, O.; Kornoukhov, V. N.; Kuzminov, V. V.; Laubenstein, M.; Lazzaro, A.; Lebedev, V. I.; Lehnert, B.; Liao, H. Y.; Lindner, M.; Lippi, I.; Liu, X.; Lubashevskiy, A.; Lubsandorzhiev, B.; Lutter, G.; Macolino, C.; Machado, A. A.; Majorovits, B.; Maneschg, W.; Misiaszek, M.; Nemchenok, I.; Nisi, S.; O'Shaughnessy, C.; Pandola, L.; Pelczar, K.; Pessina, G.; Pullia, A.; Riboldi, S.; Rumyantseva, N.; Sada, C.; Salathe, M.; Schmitt, C.; Schreiner, J.; Schulz, O.; Schwingenheuer, B.; Schönert, S.; Shevchik, E.; Shirchenko, M.; Simgen, H.; Smolnikov, A.; Stanco, L.; Strecker, H.; Tarka, M.; Ur, C. A.; Vasenko, A. A.; Volynets, O.; von Sturm, K.; Wagner, V.; Walter, M.; Wegmann, A.; Wester, T.; Wojcik, M.; Yanovich, E.; Zavarise, P.; Zhitnikov, I.; Zhukov, S. V.; Zinatulina, D.; Zuber, K.; Zuzel, G.

2013-09-01

Neutrinoless double beta decay is a process that violates lepton number conservation. It is predicted to occur in extensions of the standard model of particle physics. This Letter reports the results from phase I of the Germanium Detector Array (GERDA) experiment at the Gran Sasso Laboratory (Italy) searching for neutrinoless double beta decay of the isotope Ge76. Data considered in the present analysis have been collected between November 2011 and May 2013 with a total exposure of 21.6 kg yr. A blind analysis is performed. The background index is about 1×10-2counts/(keVkgyr) after pulse shape discrimination. No signal is observed and a lower limit is derived for the half-life of neutrinoless double beta decay of Ge76, T1/20ν>2.1×1025yr (90% C.L.). The combination with the results from the previous experiments with Ge76 yields T1/20ν>3.0×1025yr (90% C.L.).

Status of the 6.5-GeV Photon Factory Advanced Ring

Science.gov (United States)

Miyajima, T.; Adachi, S.; Cheng, W. X.; Haga, K.; Harada, K.; Hori, Y.; Hyodo, K.; Ieiri, T.; Isagawa, S.; Kageyama, T.; Kasuga, T.; Kawata, H.; Kikuchi, M.; Kobayashi, Y.; Kudo, K.; Mitsuhashi, T.; Nagahashi, S.; Nakamura, T. T.; Nakanishi, H.; Nogami, T.; Obina, T.; Ohsawa, Y.; Ono, M.; Ozaki, T.; Sakai, H.; Sakamoto, Y.; Sakanaka, S.; Sato, M.; Satoh, M.; Shioya, T.; Sugahara, R.; Tadano, M.; Takahashi, T.; Takasaki, S.; Tanimoto, Y.; Tejima, M.; Tsuchiya, K.; Uchiyama, T.; Ueda, A.; Umemori, K.; Yamamoto, S.; Yoshimoto, S.

2007-01-01

The Photon Factory Advanced Ring (PF-AR) is a 6.5-GeV synchrotron light source at the High Energy Accelerator Research Organization (KEK). It can provide high-flux hard X-rays for such research as the materials science, structural biology and medical applications. The PF-AR has five insertion devices including four in-vacuum undulators. It is operated with a single bunch which fits for time-resolved experiments. A special 5-GeV operation is partly provided for a clinical application. An initial beam current and a beam lifetime are 60 mA and approximately 14 hours, respectively. Recent developments include an installation of a new in-vacuum undulator (U♯NW14-36) to the west rf section, which was accompanied by transferring two rf cavities to other section. The undulator has been successfully operated at a minimum magnetic gap of 10 mm. We also carried out such accelerator studies as a successful test of beam injection using a pulsed quadrupole magnet, a study of low emittance optics, an establishment of two-bunch operation for the clinical application, a successful operation of a multi-bunch feedback system, and an installation of a test undulator which enables us to control polarization using a new arrangement of magnets.

Inclusive particle production in e+e- interactions in the 6 and 7 GeV center-of-mass energy regions

International Nuclear Information System (INIS)

Badtke, D.H.

1978-01-01

This dissertation describes a portion of the results from experiment SP19 conducted by the Maryland-Pavia-Princeton (MP 2 ) collaboration at the e + e - storage ring SPEAR II at the Stanford Linear Accelerator Center. The inclusive measurements described were obtained in the 6 and 7 GeV center-of-mass energy regions using a small solid angle (ΔΩ/sub MAX/ = 0.085 sr) magnetic spectrometer situated at 90 0 +- 13 0 with respect to the beams. The spectrometer and a conjugate detector opposite the spectrometer were used to measure back-to-back Bhabhas and muons, and the latter were used to normalize results. The inclusive muon signal at = 7.3 GeV with observed multiplicity n/sub CH/ = 2, acoplanarity par. delta/sub A/ > 20 0 and momentum p > 1.15 GeV/c is found to be in excess of QED and expected backgrounds. The background subtracted inclusive cross section is 10.1 +- 5.4 pb/sr. Both the momentum spectrum and the muon branching ratio of b/sub mu/ = 0.17 +- 0.09 are found to be consistent with the tau. An excess of events above expected backgrounds is also observed in those muons with n/sub CH/ > 2 and p > 1.15 GeV/c. The inclusive background subtracted cross section at = 7.3 GeV of 19.0 +- 6.3 pb/sr cannot be explained by the tau and may indicate the weak decays of charmed mesons. 5 references

Research in atomic and applied physics using a 6-GeV synchrotron source

International Nuclear Information System (INIS)

Jones, K.W.

1985-12-01

The Division of Atomic and Applied Physics in the Department of Applied Science at Brookhaven National Laboratory conducts a broad program of research using ion beams and synchrotron radiation for experiments in atomic physics and nuclear analytical techniques and applications. Many of the experiments would benefit greatly from the use of high energy, high intensity photon beams from a 6-GeV synchrotron source. A survey of some of the specific scientific possibilities is presented

Neutron therapy planning: Principles and practice in Edinburgh

International Nuclear Information System (INIS)

Duncan, W.; Williams, J.R.; Redpath, A.T.; Arnott, S.J.

1981-01-01

The principles of treatment planning using beams of fast neutron irradiation are the same as that involved in X-ray therapy. The optimum treatment technique to be employed and the standard of dose distribution depend on the penetration of the beam, the sophistication of the treatment head and certain clinical constraints. These inter-related factors are briefly discussed. The Edinburgh Cyclotron produces d(15)+Be neutrons and compared to megavoltage X-rays it is necessary to use a greater number of fields, respect greater restraints on planning and, when wedge filters are used, accept relatively higher doses in 'hot spots'. With careful and detailed planning satisfactory dose distributions can be achieved. The procedures followed in clinical planning, field selection and dose computation are described. (orig.)

The Role of Ge Wetting Layer and Ge Islands in Si MSM Photodetectors

International Nuclear Information System (INIS)

Mahmodi, H.; Hashim, M. R.

2010-01-01

In this work, Ge thin films were deposited on silicon substrates by radio frequency magnetron sputtering to form Ge islands from Ge layer on Si substrate during post-growth rapid thermal annealing (RTA). The size of the islands decreases from 0.6 to 0.1 as the rapid thermal annealing time increases from 30 s to 60 s at 900 deg. C. Not only that the annealing produces Ge islands but also wetting layer. Energy Dispersive X-ray Spectroscopy (EDX) and Scanning Electron Microscopy (SEM) were employed for structural analysis of Ge islands. Metal-Semiconductor-Metal photodetectors (MSM PDs) were fabricated on Ge islands (and wetting layer)/Si. The Ge islands and wetting layer between the contacts of the fabricated devices are etched in order to see their effects on the device. The performance of the Ge islands MSM-PD was evaluated by dark and photo current-voltage (I-V) measurements at room temperature (RT). It was found that the device with island and wetting layer significantly enhance the current gain (ratio of photo current to dark current) of the device.

Energy dependence of acceptance-corrected dielectron excess mass spectrum at mid-rapidity in Au+Au collisions at sNN=19.6 and 200 GeV

Directory of Open Access Journals (Sweden)

L. Adamczyk

2015-11-01

Full Text Available The acceptance-corrected dielectron excess mass spectra, where the known hadronic sources have been subtracted from the inclusive dielectron mass spectra, are reported for the first time at mid-rapidity |yee|<1 in minimum-bias Au+Au collisions at sNN=19.6 and 200 GeV. The excess mass spectra are consistently described by a model calculation with a broadened ρ spectral function for Mee<1.1 GeV/c2. The integrated dielectron excess yield at sNN=19.6 GeV for 0.4GeV/c2, normalized to the charged particle multiplicity at mid-rapidity, has a value similar to that in In+In collisions at sNN=17.3 GeV. For sNN=200 GeV, the normalized excess yield in central collisions is higher than that at sNN=17.3 GeV and increases from peripheral to central collisions. These measurements indicate that the lifetime of the hot, dense medium created in central Au+Au collisions at sNN=200 GeV is longer than those in peripheral collisions and at lower energies.

Total photoabsorption cross section on nuclei measured in energy range 0.5-2.6 GeV

International Nuclear Information System (INIS)

Mirazita, M.

1998-03-01

The total photoabsorption cross section on several nuclei has been measured in the energy range 0.5 - 2.6 GeV. Nuclear data show a significant reduction of the absorption strength with respect to the free nucleon case suggesting a shadowing effect at low energies

ATLAS event at 900 GeV - 6 May 2015 - Run 264034 Evt 11475271

CERN Multimedia

ATLAS Collaboration

2015-01-01

Display of a proton-proton collision event recorded by ATLAS on 6 May 2015, at 900 GeV collision energy. Tracks are reconstructed from hits in the inner tracking detector, including the new innermost pixel detector layer, the IBL. The IBL was turned on for the first time during collisions during this data-taking. The IBL is shown as the small ring in the left-hand azimuthal view, and the innermost layers in the right-hand longitudinal view.

Total photoabsorption cross section on nuclei measured in energy range 0.5-2.6 GeV; Misura della sezione d`urto di fotoassorbimento tra 0.5 e 2.6 GeV su nuclei ed analisi dei dati

Energy Technology Data Exchange (ETDEWEB)

Mirazita, M. [INFN, Laboratori Nazionali di Frascati, Rome (Italy)

1998-03-01

The total photoabsorption cross section on several nuclei has been measured in the energy range 0.5 - 2.6 GeV. Nuclear data show a significant reduction of the absorption strength with respect to the free nucleon case suggesting a shadowing effect at low energies.

ORIGIN FOR IRRADIATION EFFECT OF 0．56GeV C6＋ ON CaVSn：YIG

Institute of Scientific and Technical Information of China (English)

熊宏齐; 侯明东; 等

1995-01-01

This paper presents numerous physical characteristics of Ca,V.Sn doped yttrium iron garnet(CaVSn:YIG) irradiated with 0.56GeV carbon ions delivered by the Heavy Ion Research Facility of Lanzhou (HIRFL).The reason for change of the magnetic properties of the samples induced by energetic carbon ions bombardment is discussed.By comparison of this results with the irradiation effects of YIG induced by eneregetic argon,krypton and xenon oibtained on the GANIL,Caen,France,it is concluded that the irradiation effect of 0.56GeV C6+ on CaVSn:YIG arises from the electronic energy losses.

Small regions of overlapping deletions on 6q26 in human astrocytic tumours identified using chromosome 6 tile path array CGH

Science.gov (United States)

Ichimura, Koichi; Mungall, Andrew J; Fiegler, Heike; Pearson, Danita M.; Dunham, Ian; Carter, Nigel P; Collins, V. Peter

2009-01-01

Deletions of chromosome 6 are a common abnormality in diverse human malignancies including astrocytic tumours, suggesting the presence of tumour suppressor genes (TSG). In order to help identify candidate TSGs, we have constructed a chromosome 6 tile path microarray. The array contains 1780 clones (778 PACs and 1002 BACs) that cover 98.3% of the published chromosome 6 sequences. A total of 104 adult astrocytic tumours (10 diffuse astrocytomas, 30 anaplastic astrocytomas (AA), 64 glioblastomas (GB)) were analysed using this array. Single copy number change was successfully detected and the result was in general concordant with a microsatellite analysis. The pattern of copy number change was complex with multiple interstitial deletions/gains. However, a predominance of telomeric 6q deletions was seen. Two small common and overlapping regions of deletion at 6q26 were identified. One was 1002 kb in size and contained PACRG and QKI, while the second was 199 kb and harbours a single gene, ARID1B. The data show that the chromosome 6 tile path array is useful in mapping copy number changes with high resolution and accuracy. We confirmed the high frequency of chromosome 6 deletions in AA and GB, and identified two novel commonly deleted regions that may harbour TSGs. PMID:16205629

Examination of the Coulomb-nuclear interference in inelastic scattering of {sup 6}Li in {sup 76}Ge; Exame da interferencia Coulombiana-Nuclear no espalhamento inelastico de {sup 6}Li em {sup 76}Ge

Energy Technology Data Exchange (ETDEWEB)

Zhang, Xinxin

2015-07-01

The inelastic scattering of 28,0 MeV {sup 6}Li on {sup 76}Ge in the excitation of the 2{sup +}{sub 1} state, has been studied with the Coulomb-Nuclear Interference (CNI) analysis. The data were measured at the Pelletron-Enge-Spectrograph facility at LAFN-IFUSP. A solid-state position sensitive silicon detector (PSD) (500μm thickness and 47 × 8 mm{sup 2} area) was used to measure the data at the spectrometer focal plane. Digital pulse processing (DPP) was implemented in the acquisition system. Twenty-six spectra were measured at carefully chosen scattering angles in the range of 10 deg ≤ θ{sub Lab} ≤ 55 deg to obtain an angular distribution. The analysis was performed with the Distorted Wave Born Approximation (DWBA) and applied for the nuclear transition potential, the Deformed Optical Potential Model (DOMP), under well-established global optical parameters. The fit of the predicted cross sections to the experimental data through χ{sup 2} minimization, using the iterative method of Gauss, allowed for the extraction of the correlated parameters, δ{sup N}{sub 2}, the mass deformation length, and C{sub 2} = Ν{sup C}{sub 2}/δ{sup N}{sub 2}, the ratio between charge and mass deformation lengths. The correlated parameters obtained in the present work were C{sub 2} = 1,101 (20) and δ{sup N}{sub 2} = 1,08(21)fm. Statistical tests, through a Monte Carlo simulation of 5000 new data sets, validated the method employed in the correlated parameters fit. The methodology applied for the CNI analysis allowed the extraction of ratio B(EL)/B(ISL), which is proportional to the square of C{sub 2}, with a good precision due to the scale uncertainties cancellation of the absolute cross sections. The values of B(IS2) and of the ratios B(E2)/B(IS2) obtained in the present work have not been reported before and allow the study of the evolution of the collectivity throughout the even-A germanium chain together with former results obtained for the {sup 70},{sup 72},{sup 74}Ge

High-pressure studies on a new superconducting clathrate: Ba sub 6 Ge sub 2 sub 5

CERN Document Server

Yuan, H Q; Carrillo-Cabrera, W; Paschen, S; Sparn, G; Baenitz, M; Grin, Y; Steglich, F

2002-01-01

The effect of pressure on the low-temperature states of the newly discovered clathrate Ba sub 6 Ge sub 2 sub 5 is investigated by means of measurements of the electrical resistivity. At ambient pressure, Ba sub 6 Ge sub 2 sub 5 undergoes a two-step structural phase transition between 230 and 180 K from metallic behaviour to a high-resistivity state characterized by a mean free path of about 3 A. Interestingly, a Bardeen-Cooper-Schrieffer-like (BCS-like) superconducting transition occurs at T sub C approx 0.24 K from the resulting 'bad metal'. With increasing pressure, the structural phase transition is depressed but T sub C increases drastically. T sub C reaches a maximum value of 3.85 K at the critical pressure p sub C approx 2.8 GPa, where the structural distortion is completely suppressed and the system exhibits metallic behaviour. Higher pressures lead to a slight decrease of T sub C.

ATLAS event at 900 GeV - 6 May 2015 - Run 264034 lb 659 event 11526514

CERN Multimedia

ATLAS Collaboration

2015-01-01

Display of a proton-proton collision event recorded by ATLAS on 6 May 2015, at 900 GeV collision energy. Tracks reconstructed from hits in the inner tracking detector are shown as orange arcs curving in the solenoidal magnetic field. The green and yellow bars indicate energy deposits in the Liquid Argon and Scintillating Tile calorimeters respectively.

Examination of the Coulomb-nuclear interference in inelastic scattering of 6Li in 76Ge

International Nuclear Information System (INIS)

Zhang, Xinxin

2015-01-01

The inelastic scattering of 28,0 MeV 6 Li on 76 Ge in the excitation of the 2 + 1 state, has been studied with the Coulomb-Nuclear Interference (CNI) analysis. The data were measured at the Pelletron-Enge-Spectrograph facility at LAFN-IFUSP. A solid-state position sensitive silicon detector (PSD) (500μm thickness and 47 × 8 mm 2 area) was used to measure the data at the spectrometer focal plane. Digital pulse processing (DPP) was implemented in the acquisition system. Twenty-six spectra were measured at carefully chosen scattering angles in the range of 10 deg ≤ θ Lab ≤ 55 deg to obtain an angular distribution. The analysis was performed with the Distorted Wave Born Approximation (DWBA) and applied for the nuclear transition potential, the Deformed Optical Potential Model (DOMP), under well-established global optical parameters. The fit of the predicted cross sections to the experimental data through χ 2 minimization, using the iterative method of Gauss, allowed for the extraction of the correlated parameters, δ N 2 , the mass deformation length, and C 2 = Ν C 2 /δ N 2 , the ratio between charge and mass deformation lengths. The correlated parameters obtained in the present work were C 2 = 1,101 (20) and δ N 2 = 1,08(21)fm. Statistical tests, through a Monte Carlo simulation of 5000 new data sets, validated the method employed in the correlated parameters fit. The methodology applied for the CNI analysis allowed the extraction of ratio B(EL)/B(ISL), which is proportional to the square of C 2 , with a good precision due to the scale uncertainties cancellation of the absolute cross sections. The values of B(IS2) and of the ratios B(E2)/B(IS2) obtained in the present work have not been reported before and allow the study of the evolution of the collectivity throughout the even-A germanium chain together with former results obtained for the 70 , 72 , 74 Ge isotopes. The results along the chain indicate that although the protons relative to the neutrons

Study of thermal properties and the effect of carrier concentration in the ternary compound Ag6Ge10P12

International Nuclear Information System (INIS)

Ahmad, K.A.

1990-01-01

In this work the thermal properties of the ternary semiconducting compounds (Ag6Ge10P12) have been investigated. Single crystal samples prepared by Bridgman technique low temperature cryostat are illustrated which is suitable to control temperature from liquid nitrogen up to room temperature. The work contains theoretical and experimental study on binary and ternary semiconductors. Also it illustrates the experimental results of thermoelectric properties of AG6Ge10P12 samples as well as the calculated effective mass, Fermi energy and their analysis throughout the temperature range between 80-300 K. 3 tabs.; 18 figs.; 57 refs

270GHz SiGe BiCMOS manufacturing process platform for mmWave applications

Science.gov (United States)

Kar-Roy, Arjun; Preisler, Edward J.; Talor, George; Yan, Zhixin; Booth, Roger; Zheng, Jie; Chaudhry, Samir; Howard, David; Racanelli, Marco

2011-11-01

TowerJazz has been offering the high volume commercial SiGe BiCMOS process technology platform, SBC18, for more than a decade. In this paper, we describe the TowerJazz SBC18H3 SiGe BiCMOS process which integrates a production ready 240GHz FT / 270 GHz FMAX SiGe HBT on a 1.8V/3.3V dual gate oxide CMOS process in the SBC18 technology platform. The high-speed NPNs in SBC18H3 process have demonstrated NFMIN of ~2dB at 40GHz, a BVceo of 1.6V and a dc current gain of 1200. This state-of-the-art process also comes with P-I-N diodes with high isolation and low insertion losses, Schottky diodes capable of exceeding cut-off frequencies of 1THz, high density stacked MIM capacitors, MOS and high performance junction varactors characterized up to 50GHz, thick upper metal layers for inductors, and various resistors such as low value and high value unsilicided poly resistors, metal and nwell resistors. Applications of the SBC18H3 platform for millimeter-wave products for automotive radars, phased array radars and Wband imaging are presented.

Pseudomorphic GeSiSn, SiSn and Ge layers in strained heterostructures

Science.gov (United States)

Timofeev, V. A.; Nikiforov, A. I.; Tuktamyshev, A. R.; Mashanov, V. I.; Loshkarev, I. D.; Bloshkin, A. A.; Gutakovskii, A. K.

2018-04-01

The GeSiSn, SiSn layer growth mechanisms on Si(100) were investigated and the kinetic diagrams of the morphological GeSiSn, SiSn film states in the temperature range of 150 °C-450 °C at the tin content from 0% to 35% were built. The phase diagram of the superstructural change on the surface of Sn grown on Si(100) in the annealing temperature range of 0 °C-850 °C was established. The specular beam oscillations were first obtained during the SiSn film growth from 150 °C to 300 °C at the Sn content up to 35%. The transmission electron microscopy and x-ray diffractometry data confirm the crystal perfection and the pseudomorphic GeSiSn, SiSn film state, and also the presence of smooth heterointerfaces between GeSiSn or SiSn and Si. The photoluminescence for the multilayer periodic GeSiSn/Si structures in the range of 0.6-0.8 eV was detected. The blue shift with the excitation power increase is observed suggesting the presence of a type II heterostructure. The creation of tensile strained Ge films, which are pseudomorphic to the underlying GeSn layer, is confirmed by the results of the formation and analysis of the reciprocal space map in the x-ray diffractometry. The tensile strain in the Ge films reached the value in the range of 0.86%-1.5%. The GeSn buffer layer growth in the Sn content range from 8% to 12% was studied. The band structure of heterosystems based on pseudomorphic GeSiSn, SiSn and Ge layers was calculated and the valence and conduction band subband position dependences on the Sn content were built. Based on the calculation, the Sn content range in the GeSiSn, SiSn, and GeSn layers, which corresponds to the direct bandgap GeSiSn, SiSn, and Ge material, was obtained.

Comparison of inclusive particle production in 14.6 GeV/c proton-nucleus collisions with simulation

International Nuclear Information System (INIS)

Jaffe, D.E.; Lo, K.H.; Comfort, J.R.; Sivertz, M.

2006-01-01

Inclusive charged pion, kaon, proton and deuteron production in 14.6 GeV/c proton-nucleus collisions measured by BNL experiment E802 is compared with results from the GEANT3, GEANT4 and FLUKA simulation packages. The FLUKA package is found to have the best overall agreement

Particle production in Si + A and p + A collisions at 14.6 A·GeV/c

International Nuclear Information System (INIS)

Miake, Y.

1990-01-01

Particle production (π ± , K ± , p) has been measured in both Si+A and p+A collisions at 14.6 A·GeV/c. Comparisons of m t and dn/dy distributions between p+Be, p+Au and central Si+Au collisions are discussed. 8 refs., 3 figs

Phase-shift analysis of pion-nucleon elastic scattering below 1.6 GeV; Analyse en ondes partielles de la diffusion elastique meson {pi} - nucleon au-dessous de 1.6 GeV

Energy Technology Data Exchange (ETDEWEB)

Bareyre, P [Commissariat a l' Energie Atomique, Saclay (France). Centre d' Etudes Nucleaires

1968-06-01

Experimental results of pion-nucleon elastic scattering below 1.6 GeV (total cross sections, angular distributions of elastic scattering and recoil nucleon polarizations) have been described by a partial wave analysis. This analysis has been developed, one energy at a time, with a method of least squares fits. A single solution is extracted by continuity with energy of the different solutions. Resonating behaviour has been clearly established for several partial waves. In addition to these important effects some phase shifts show rapid variations with energy. Present experimental situation does not permit to say whether these variations are due to experimental biases or to physical effects. (author) [French] Les resultats experimentaux de la diffusion elastique meson {pi} - nucleon au-dessous de 1.6 GeV (sections efficaces totales, distributions angulaires de diffusion elastique et de polarisation du nucleon de recul) sont decrits a l'aide d'une analyse en ondes partielles. Cette analyse est developpee energie par energie au moyen d'une methode d'ajustement en moindres carres. Un critere empirique de continuite des solutions en fonction de l'energie a permis d'isoler une solution unique. Des resonances sont clairement etablies pour plusieurs ondes partielles, ainsi que certains petits effets moins caracteristiques. Pour ceux-ci, la situation experimentale presente ne permet pas d'affirmer s'ils sont dus a des effets physiques ou a des biais experimentaux. (auteur)

Studies of an array of PbF2 Cherenkov crystals with large-area SiPM readout

Energy Technology Data Exchange (ETDEWEB)

Fienberg, A. T.; Alonzi, L. P.; Anastasi, A.; Bjorkquist, R.; Cauz, D.; Fatemi, R.; Ferrari, C.; Fioretti, A.; Frankenthal, A.; Gabbanini, C.; Gibbons, L. K.; Giovanetti, K.; Goadhouse, S. D.; Gohn, W. P.; Gorringe, T. P.; Hertzog, D. W.; Iacovacci, M.; Kammel, P.; Kaspar, J.; Kiburg, B.; Li, L.; Mastroianni, S.; Pauletta, G.; Peterson, D. A.; Počanić, D.; Smith, M. W.; Sweigart, D. A.; Tishchenko, V.; Venanzoni, G.; Van Wechel, T. D.; Wall, K. B.; Winter, P.; Yai, K.

2015-05-01

The electromagnetic calorimeter for the new muon (g-2) experiment at Fermilab will consist of arrays of PbF2 Cherenkov crystals read out by large-area silicon photo-multiplier (SiPM) sensors. We report here on measurements and simulations using 2.0 -- 4.5 GeV electrons with a 28-element prototype array. All data were obtained using fast waveform digitizers to accurately capture signal pulse shapes versus energy, impact position, angle, and crystal wrapping. The SiPMs were gain matched using a laser-based calibration system, which also provided a stabilization procedure that allowed gain correction to a level of 1e-4 per hour. After accounting for longitudinal fluctuation losses, those crystals wrapped in a white, diffusive wrapping exhibited an energy resolution sigma/E of (3.4 +- 0.1) % per sqrt(E/GeV), while those wrapped in a black, absorptive wrapping had (4.6 +- 0.3) % per sqrt(E/GeV). The white-wrapped crystals---having nearly twice the total light collection---display a generally wider and impact-position-dependent pulse shape owing to the dynamics of the light propagation, in comparison to the black-wrapped crystals, which have a narrower pulse shape that is insensitive to impact position.

Energy dependence of acceptance-corrected dielectron excess mass spectrum at mid-rapidity in Au +Au collisions at √{sNN} = 19.6 and 200 GeV

Science.gov (United States)

Adamczyk, L.; Adkins, J. K.; Agakishiev, G.; Aggarwal, M. M.; Ahammed, Z.; Alekseev, I.; Alford, J.; Aparin, A.; Arkhipkin, D.; Aschenauer, E. C.; Averichev, G. S.; Banerjee, A.; Bellwied, R.; Bhasin, A.; Bhati, A. K.; Bhattarai, P.; Bielcik, J.; Bielcikova, J.; Bland, L. C.; Bordyuzhin, I. G.; Bouchet, J.; Brandin, A. V.; Bunzarov, I.; Burton, T. P.; Butterworth, J.; Caines, H.; Calder'on de la Barca S'anchez, M.; Campbell, J. M.; Cebra, D.; Cervantes, M. C.; Chakaberia, I.; Chaloupka, P.; Chang, Z.; Chattopadhyay, S.; Chen, J. H.; Chen, X.; Cheng, J.; Cherney, M.; Christie, W.; Codrington, M. J. M.; Contin, G.; Crawford, H. J.; Das, S.; De Silva, L. C.; Debbe, R. R.; Dedovich, T. G.; Deng, J.; Derevschikov, A. A.; di Ruzza, B.; Didenko, L.; Dilks, C.; Dong, X.; Drachenberg, J. L.; Draper, J. E.; Du, C. M.; Dunkelberger, L. E.; Dunlop, J. C.; Efimov, L. G.; Engelage, J.; Eppley, G.; Esha, R.; Evdokimov, O.; Eyser, O.; Fatemi, R.; Fazio, S.; Federic, P.; Fedorisin, J.; Feng; Filip, P.; Fisyak, Y.; Flores, C. E.; Fulek, L.; Gagliardi, C. A.; Garand, D.; Geurts, F.; Gibson, A.; Girard, M.; Greiner, L.; Grosnick, D.; Gunarathne, D. S.; Guo, Y.; Gupta, S.; Gupta, A.; Guryn, W.; Hamad, A.; Hamed, A.; Haque, R.; Harris, J. W.; He, L.; Heppelmann, S.; Hirsch, A.; Hoffmann, G. W.; Hofman, D. J.; Horvat, S.; Huang, H. Z.; Huang, X.; Huang, B.; Huck, P.; Humanic, T. J.; Igo, G.; Jacobs, W. W.; Jang, H.; Jiang, K.; Judd, E. G.; Kabana, S.; Kalinkin, D.; Kang, K.; Kauder, K.; Ke, H. W.; Keane, D.; Kechechyan, A.; Khan, Z. H.; Kikola, D. P.; Kisel, I.; Kisiel, A.; Klein, S. R.; Koetke, D. D.; Kollegger, T.; Kosarzewski, L. K.; Kotchenda, L.; Kraishan, A. F.; Kravtsov, P.; Krueger, K.; Kulakov, I.; Kumar, L.; Kycia, R. A.; Lamont, M. A. C.; Landgraf, J. M.; Landry, K. D.; Lauret, J.; Lebedev, A.; Lednicky, R.; Lee, J. H.; Li, X.; Li, X.; Li, W.; Li, Z. M.; Li, Y.; Li, C.; Lisa, M. A.; Liu, F.; Ljubicic, T.; Llope, W. J.; Lomnitz, M.; Longacre, R. S.; Luo, X.; Ma, L.; Ma, R.; Ma, G. L.; Ma, Y. G.; Magdy, N.; Majka, R.; Manion, A.; Margetis, S.; Markert, C.; Masui, H.; Matis, H. S.; McDonald, D.; Meehan, K.; Minaev, N. G.; Mioduszewski, S.; Mohanty, B.; Mondal, M. M.; Morozov, D. A.; Mustafa, M. K.; Nandi, B. K.; Nasim, Md.; Nayak, T. K.; Nigmatkulov, G.; Nogach, L. V.; Noh, S. Y.; Novak, J.; Nurushev, S. B.; Odyniec, G.; Ogawa, A.; Oh, K.; Okorokov, V.; Olvitt, D. L.; Page, B. S.; Pan, Y. X.; Pandit, Y.; Panebratsev, Y.; Pawlak, T.; Pawlik, B.; Pei, H.; Perkins, C.; Peterson, A.; Pile, P.; Planinic, M.; Pluta, J.; Poljak, N.; Poniatowska, K.; Porter, J.; Posik, M.; Poskanzer, A. M.; Pruthi, N. K.; Putschke, J.; Qiu, H.; Quintero, A.; Ramachandran, S.; Raniwala, R.; Raniwala, S.; Ray, R. L.; Ritter, H. G.; Roberts, J. B.; Rogachevskiy, O. V.; Romero, J. L.; Roy, A.; Ruan, L.; Rusnak, J.; Rusnakova, O.; Sahoo, N. R.; Sahu, P. K.; Sakrejda, I.; Salur, S.; Sandacz, A.; Sandweiss, J.; Sarkar, A.; Schambach, J.; Scharenberg, R. P.; Schmah, A. M.; Schmidke, W. B.; Schmitz, N.; Seger, J.; Seyboth, P.; Shah, N.; Shahaliev, E.; Shanmuganathan, P. V.; Shao, M.; Sharma, M. K.; Sharma, B.; Shen, W. Q.; Shi, S. S.; Shou, Q. Y.; Sichtermann, E. P.; Sikora, R.; Simko, M.; Skoby, M. J.; Smirnov, N.; Smirnov, D.; Solanki, D.; Song, L.; Sorensen, P.; Spinka, H. M.; Srivastava, B.; Stanislaus, T. D. S.; Stock, R.; Strikhanov, M.; Stringfellow, B.; Sumbera, M.; Summa, B. J.; Sun, Y.; Sun, Z.; Sun, X. M.; Sun, X.; Surrow, B.; Svirida, D. N.; Szelezniak, M. A.; Takahashi, J.; Tang, A. H.; Tang, Z.; Tarnowsky, T.; Tawfik, A. N.; Thomas, J. H.; Timmins, A. R.; Tlusty, D.; Tokarev, M.; Trentalange, S.; Tribble, R. E.; Tribedy, P.; Tripathy, S. K.; Trzeciak, B. A.; Tsai, O. D.; Ullrich, T.; Underwood, D. G.; Upsal, I.; Van Buren, G.; van Nieuwenhuizen, G.; Vandenbroucke, M.; Varma, R.; Vasiliev, A. N.; Vertesi, R.; Videbaek, F.; Viyogi, Y. P.; Vokal, S.; Voloshin, S. A.; Vossen, A.; Wang, Y.; Wang, F.; Wang, H.; Wang, J. S.; Wang, G.; Wang, Y.; Webb, J. C.; Webb, G.; Wen, L.; Westfall, G. D.; Wieman, H.; Wissink, S. W.; Witt, R.; Wu, Y. F.; Xiao, Z.; Xie, W.; Xin, K.; Xu, Z.; Xu, Q. H.; Xu, N.; Xu, H.; Xu, Y. F.; Yang, Y.; Yang, C.; Yang, S.; Yang, Q.; Yang, Y.; Ye, Z.; Yepes, P.; Yi, L.; Yip, K.; Yoo, I.-K.; Yu, N.; Zbroszczyk, H.; Zha, W.; Zhang, J. B.; Zhang, X. P.; Zhang, S.; Zhang, J.; Zhang, Z.; Zhang, Y.; Zhang, J. L.; Zhao, F.; Zhao, J.; Zhong, C.; Zhou, L.; Zhu, X.; Zoulkarneeva, Y.; Zyzak, M.

2015-11-01

The acceptance-corrected dielectron excess mass spectra, where the known hadronic sources have been subtracted from the inclusive dielectron mass spectra, are reported for the first time at mid-rapidity |yee | < 1 in minimum-bias Au +Au collisions at √{sNN} = 19.6 and 200 GeV. The excess mass spectra are consistently described by a model calculation with a broadened ρ spectral function for Mee < 1.1 GeV /c2. The integrated dielectron excess yield at √{sNN} = 19.6 GeV for 0.4 GeV /c2, normalized to the charged particle multiplicity at mid-rapidity, has a value similar to that in In +In collisions at √{sNN} = 17.3 GeV. For √{sNN} = 200 GeV, the normalized excess yield in central collisions is higher than that at √{sNN} = 17.3 GeV and increases from peripheral to central collisions. These measurements indicate that the lifetime of the hot, dense medium created in central Au +Au collisions at √{sNN} = 200 GeV is longer than those in peripheral collisions and at lower energies.

Study of the pπ- system produced in reaction K+n→K+π-p at 8.25GeV/c and comparison with data at 4.6 and 12GeV/c

International Nuclear Information System (INIS)

Vignaud, D.; Ginestet, J.; Burlaud, D.; Sene, M.

1975-01-01

The fragmentation of the neutron into pπ - induced by incident K + of 8.25GeV/c is studied using data from the CERN 2m deuterium bubble chamber and compared with data at 4.6 and 12GeV/c. The pπ - low mass enhancement below 1.85GeV/c is analyzed and the major part exhibits the properties expected for diffraction dissociation. The presence of resonances is discussed. The data are fairly well represented by a double Regge exchange model involving pion and Pomeron exchanges. The violation of the s-channel and t-channel helicity conservation is observed and compared to the s-channel description of Humble [fr

The computational study of adsorption of carbon monoxide on pristine and Ge-doped (6,0 zigzag models of BNNTs

Directory of Open Access Journals (Sweden)

Mahdi Rezaei Sameti

2014-07-01

Full Text Available The aim of this research is studying the effects of Ge-doped on CO adsorption on the outer and inner surfaces of (6, 0 zigzag model of boron nitride nanotube (BNNTs by using DFT theory. For this purpose, eight models of CO adsorption on the surfaces of BNNTs are considered. At first step, all structures were optimized at B3LYP and 6-31G (d standard base set and then the electronic structure, adsorption energy, HOMO - LUMO orbitals, gap energy, quantum molecular descriptors, and NQR parameters were determined. The bond lengths neighborhood sites of Ge-doped of BNNTs at all models were increased and the bond angles decreased. The small ad-sorption energy value and large interaction distance show that the adsorption of CO on BNNTs is weakly physical adsorption due to weak Van der Waals interaction. Our calculated results show that the adsorption of CO on the surface of undoped models is more favorable than Ge-doped models. The NQR parameters of the first layer in all the models are larger than those other layers.

Vertical epitaxial wire-on-wire growth of Ge/Si on Si(100) substrate.

Science.gov (United States)

Shimizu, Tomohiro; Zhang, Zhang; Shingubara, Shoso; Senz, Stephan; Gösele, Ulrich

2009-04-01

Vertically aligned epitaxial Ge/Si heterostructure nanowire arrays on Si(100) substrates were prepared by a two-step chemical vapor deposition method in anodic aluminum oxide templates. n-Butylgermane vapor was employed as new safer precursor for Ge nanowire growth instead of germane. First a Si nanowire was grown by the vapor liquid solid growth mechanism using Au as catalyst and silane. The second step was the growth of Ge nanowires on top of the Si nanowires. The method presented will allow preparing epitaxially grown vertical heterostructure nanowires consisting of multiple materials on an arbitrary substrate avoiding undesired lateral growth.

Proton spectra from 6.3 GeV/c deuteron break-up on H, D, C, Al and Bi nuclei

International Nuclear Information System (INIS)

Azhgirey, L.S.; Ignatenko, M.A.; Ivanov, V.V.; Kuznetsov, A.S.; Mescheryakov, M.G.; Razin, S.V.; Stoletov, G.D.; Vzorov, I.K.; Zhmyrov, V.N.

1977-01-01

The proton spectra from deuteron break-up on H, D, 12 C, 27 Al and 209 Bi nuclei were measured at an angle of 103 mrad (lab. system) in the momentum interval from 2.6 to 3.6 GeV/c. The measurements were made at the JINR synchrophasotron by one-arm magnetic spectrometer on-line with a computer. The extracted 6.3 GeV/c deuteron beam was incident on targets of CH 2 , CD 2 , C, Al and Bi at the thickness from 0.8 to 2 g/cm 2 . The flux of deuteron beam was equal to 5x10 8 -5x10 9 particles/pulse with a typical pulse length of 300 ms. The repetition rate was one pulse every 10 s. Proton peaks with the maximum at about 3.1 GeV/c and 280-300 MeV/c FWHM dominate in all the measured spectra. Experimental proton spectra are compared with calculations with the Reid, the Moravcsik Gartenhaus, the Hulten and the Gauss wave functions. The results, on the whole, are reasonably reproduced in the framework of the Glauber multiple scattering model taking into account the relativistic deformation of the deuteron wave function

Ge deposition on Si(1 0 0) in the conditions close to dynamic equilibrium between islands growth and their decay

International Nuclear Information System (INIS)

Shklyaev, A.A.; Budazhapova, A.E.

2016-01-01

Graphical abstract: - Highlights: • Solid source MBE is used for island growth by Ge deposition on Si(1 0 0) at 700–900 °C. • Islands acquire a monomodal size distribution at temperatures above 800 °C. • Islands form ordered arrays during Ge deposition at 900 °C. • Conditions close to dynamic equilibrium are realized for growth and decay of islands at 900 °C. • Shape of ordered islands is cone with shallow sidewalls. - Abstract: The formation of islands arrays during Ge deposition on Si(1 0 0) at high temperatures is studied using scanning tunneling and electron microscopies. It is found that the island size and shape distributions, which are known to be bimodal at growth temperatures below 700 °C, become monomodal at temperatures above 800 °C. The obtained data suggest that the processes such as island nucleation and Ostwald ripening become less significant in the surface morphology formation, giving the advantage to selective attachment of deposited Ge atoms to island sidewalls and spatially inhomogeneous Si-Ge intermixing, as the temperature increases. At 900 °C, the islands exhibit a tendency to form laterally ordered arrays when the growth conditions approach the dynamic equilibrium between the growth of islands and their decay by means of Si-Ge intermixing. The islands ordering is accompanied by their shape transformation into the cone with shallow sidewalls inclined from (1 0 0) by angles of around 10°.

Crystal structure of LaFe5Ge3O15 = LaFe5[GeO4][Ge2O7]O4

International Nuclear Information System (INIS)

Genkina, E.A.; Maksimov, B.A.; Mill, B.V.

1991-01-01

The authors have determined the structure of a new lanthanum-iron germanate LaFe 5 [GeO 4 ][GeO 4 ][Ge 2 O 7 ]O 4 (a = 18.040(4), b = 17.012(4), c = 7.591(1) angstrom, V = 2330.2(9) angstrom 3 , Z = 8, ρ t = 4.99 g/cm 3 , space ground Cmca, 1976 I hkl ≥ 3 σ(I), R = 4.5%). The compound is interesting because the framework simultaneously contains ortho- and diorthogroups of Ge and because of a classical set of coordination numbers (4,5,6) characteristic of trivalent iron within the composition of one structure. The coordination polyhedron of La has nine vertices

Amorphous inclusions during Ge and GeSn epitaxial growth via chemical vapor deposition

Energy Technology Data Exchange (ETDEWEB)

Gencarelli, F., E-mail: federica.gencarelli@imec.be [imec, Kapeldreef 75, 3001 Leuven (Belgium); Dept. of Metallurgy and Materials Engineering, KU Leuven, B-3001 Leuven (Belgium); Shimura, Y. [imec, Kapeldreef 75, 3001 Leuven (Belgium); Nuclear and Radiation Physics Section, KU Leuven, B-3001 Leuven (Belgium); Kumar, A. [imec, Kapeldreef 75, 3001 Leuven (Belgium); Nuclear and Radiation Physics Section, KU Leuven, B-3001 Leuven (Belgium); Vincent, B.; Moussa, A.; Vanhaeren, D.; Richard, O.; Bender, H. [imec, Kapeldreef 75, 3001 Leuven (Belgium); Vandervorst, W. [imec, Kapeldreef 75, 3001 Leuven (Belgium); Nuclear and Radiation Physics Section, KU Leuven, B-3001 Leuven (Belgium); Caymax, M.; Loo, R. [imec, Kapeldreef 75, 3001 Leuven (Belgium); Heyns, M. [imec, Kapeldreef 75, 3001 Leuven (Belgium); Dept. of Metallurgy and Materials Engineering, KU Leuven, B-3001 Leuven (Belgium)

2015-09-01

In this work, we discuss the characteristics of particular island-type features with an amorphous core that are developed during the low temperature epitaxial growth of Ge and GeSn layers by means of chemical vapor deposition with Ge{sub 2}H{sub 6}. Although further investigations are needed to unambiguously identify the origin of these features, we suggest that they are originated by the formation of clusters of H and/or contaminants atoms during growth. These would initially cause the formation of pits with crystalline rough facets over them, resulting in ring-shaped islands. Then, when an excess surface energy is overcome, an amorphous phase would nucleate inside the pits and fill them. Reducing the pressure and/or increasing the growth temperature can be effective ways to prevent the formation of these features, likely due to a reduction of the surface passivation from H and/or contaminant atoms. - Highlights: • Island features with amorphous cores develop during low T Ge(Sn) CVD with Ge{sub 2}H{sub 6.} • These features are thoroughly characterized in order to understand their origin. • A model is proposed to describe the possible evolution of these features. • Lower pressures and/or higher temperatures avoid the formation of these features.

Study of Ge loss during Ge condensation process

International Nuclear Information System (INIS)

Xue, Z.Y.; Di, Z.F.; Ye, L.; Mu, Z.Q.; Chen, D.; Wei, X.; Zhang, M.; Wang, X.

2014-01-01

Ge loss during Ge condensation process was investigated by transmission electron microscopy, Raman spectroscopy, secondary ion mass spectrometry and Rutherford backscattering spectrometry. This work reveals that Ge loss can be attributed to the Ge oxidation at SiO 2 /SiGe interface, Ge diffusion in SiO 2 layers and Ge trapped at buried SiO 2 /Si interface. During Ge condensation process, with the increase of the Ge content, the Si atoms become insufficient for selective oxidation at the oxide/SiGe interface. Consequently, the Si and Ge are oxidized simultaneously. When the Ge composition in SiGe layer increases further and approaches 100%, the Ge atoms begin to diffuse into the top SiO 2 layer and buried SiO 2 layer. However, the X-ray photoelectron spectrometry analysis manifests that the chemical states of the Ge in top SiO 2 layer are different from those in buried SiO 2 layer, as the Ge atoms diffused into top SiO 2 layer are oxidized to form GeO 2 in the subsequent oxidation step. With the increase of the diffusion time, a quantity of Ge atoms diffuse through buried SiO 2 layer and pile up at buried SiO 2 /Si interface due to the interfacial trapping. The SiO 2 /Si interface acts like a pump, absorbing Ge from a Ge layer continuously through a pipe-buried SiO 2 layer. With the progress of Ge condensation process, the quantity of Ge accumulated at SiO 2 /Si interface increases remarkably. - Highlights: • Ge loss during Ge condensation process is attributed to the Ge oxidation at SiO 2 /SiGe interface. • Ge diffusion in SiO 2 layers and Ge trapped at buried SiO 2 /Si interface • When Ge content in SiGe layer approaches 100%, Ge diffusion into the SiO 2 layer is observed. • Ge then gradually diffuses through buried SiO 2 layer and pile up at SiO 2 /Si interface

Photoluminescence and electroluminescence from Ge/strained GeSn/Ge quantum wells

Energy Technology Data Exchange (ETDEWEB)

Lin, Chung-Yi; Chang, Chih-Chiang [Department of Electrical Engineering, Graduate Institute of Photonics and Optoelectronics, National Taiwan University, Taipei 10617, Taiwan (China); Huang, Chih-Hsiung; Huang, Shih-Hsien [Department of Electrical Engineering, Graduate Institute of Electronics Engineering, National Taiwan University, Taipei 10617, Taiwan (China); Liu, C. W., E-mail: chee@cc.ee.ntu.edu.tw [Department of Electrical Engineering, Graduate Institute of Photonics and Optoelectronics, National Taiwan University, Taipei 10617, Taiwan (China); Department of Electrical Engineering, Graduate Institute of Electronics Engineering, National Taiwan University, Taipei 10617, Taiwan (China); National Nano Device Labs, Hsinchu 30077, Taiwan (China); Huang, Yi-Chiau; Chung, Hua; Chang, Chorng-Ping [Applied Materials Inc., Sunnyvale, California 94085 (United States)

2016-08-29

Ge/strained GeSn/Ge quantum wells are grown on a 300 mm Si substrate by chemical vapor deposition. The direct bandgap emission from strained GeSn is observed in the photoluminescence spectra and is enhanced by Al{sub 2}O{sub 3}/SiO{sub 2} passivation due to the field effect. The electroluminescence of the direct bandgap emission of strained GeSn is also observed from the Ni/Al{sub 2}O{sub 3}/GeSn metal-insulator-semiconductor tunneling diodes. Electroluminescence is a good indicator of GeSn material quality, since defects in GeSn layers degrade the electroluminescence intensity significantly. At the accumulation bias, the holes in the Ni gate electrode tunnel to the strained n-type GeSn layer through the ultrathin Al{sub 2}O{sub 3} and recombine radiatively with electrons. The emission wavelength of photoluminescence and electroluminescence can be tuned by the Sn content.

The Edinburgh experience of fast neutron therapy

International Nuclear Information System (INIS)

Duncan, W.; Arnott, S.J.; Orr, J.A.; Kerr, G.R.

1982-01-01

The Edinburgh experience is based on a d(15 + Be) neutron beam generated by a compact CS 30 Cyclotron. Neutron therapy alone given in 20 daily fractions over four weeks has been compared with photon therapy given in the same fractionation schedule. Since clinical studies began in March, 1977, over 500 patients have been treated by fast neutrons. Almost all patients are now admitted to randomly controlled trials. In the head and neck trial conducted in collaboration with collegues in Amsterdam and Essen, 192 patients are available for analysis. Most patients had T3 lesions and about 50% had involved nodes. The cumulative regression rate at six months is similar after neutrons and photons (75%). Later recurrence rates (36%) are also similar. The early radiation morbidity is similar in both groups, but the late reactions are greater after neutrons (15%) than photons (6%). Overall survival is better after photon therapy. A trial of patients with glioblastoma has also shown a better survival after photon therapy. Neutron therapy was associated with demyelinization in three of 18 patients. Patients with transitional cell cancer of the bladder have also been the subject of study. Local tumor control was similar (53%) after neutrons and photons. Late radiation morbidity was much greater after neutrons (20%), compared with photons (2%). In a trial of advanced carcinoma of the rectum, the local tumor control was also similar after neutrons and photons (30%), but morbidity was greater after neutrons. Soft tissue sarcomas have shown response rates (37%) that may be expected after photon therapy. Salivary gland tumors have shown a similar experience, although slow growing tumors such as adenoid cystic carcinoma may respond better to neutrons

Ternary germanides RERhGe{sub 2} (RE = Y, Gd-Ho) – New representatives of the YIrGe{sub 2} type

Energy Technology Data Exchange (ETDEWEB)

Voßwinkel, Daniel; Heletta, Lukas; Hoffmann, Rolf-Dieter; Pöttgen, Rainer, E-mail: pottgen@uni-muenster.de

2016-11-15

The YIrGe{sub 2} type ternary germanides RERhGe{sub 2} (RE = Y, Gd-Ho) were synthesized from the elements by arc-melting and characterized by powder X-ray diffraction. The structure of DyRhGe{sub 2} was refined from single crystal X-ray diffractometer data: Immm, a = 426.49(9), b = 885.0(2), c = 1577.4(3) pm, wR2 = 0.0533, 637 F{sup 2} values, 30 variables (300 K data). The structure contains two crystallographically independent dysprosium atoms in pentagonal prismatic and hexagonal prismatic coordination. The three-dimensional [RhGe{sub 2}] polyanion is stabilized through covalent Rh–Ge (243–261 pm) and Ge–Ge (245–251 pm) bonding. The close structural relationship with the slightly rhodium-poorer germanides RE{sub 5}Rh{sub 4}Ge{sub 10} (≡ RERh{sub 0.8}Ge{sub 2}) is discussed. Temperature-dependent magnetic susceptibility measurements reveal Pauli paramagnetism for YRhGe{sub 2} and Curie-Weiss paramagnetism for RERhGe{sub 2} with RE = Gd, Tb, Dy and Ho. These germanides order antiferromagnetically at T{sub N} = 7.2(5), 10.6(5), 8.1(5), and 6.4(5) K, respectively. - Graphical abstract: The germanides RERhGe{sub 2} (RE = Y, Gd-Ho) are new representatives of the YIrGe{sub 2} type.

Results on neutrinoless double-β decay of 76Ge from phase I of the GERDA experiment.

Science.gov (United States)

Agostini, M; Allardt, M; Andreotti, E; Bakalyarov, A M; Balata, M; Barabanov, I; Barnabé Heider, M; Barros, N; Baudis, L; Bauer, C; Becerici-Schmidt, N; Bellotti, E; Belogurov, S; Belyaev, S T; Benato, G; Bettini, A; Bezrukov, L; Bode, T; Brudanin, V; Brugnera, R; Budjáš, D; Caldwell, A; Cattadori, C; Chernogorov, A; Cossavella, F; Demidova, E V; Domula, A; Egorov, V; Falkenstein, R; Ferella, A; Freund, K; Frodyma, N; Gangapshev, A; Garfagnini, A; Gotti, C; Grabmayr, P; Gurentsov, V; Gusev, K; Guthikonda, K K; Hampel, W; Hegai, A; Heisel, M; Hemmer, S; Heusser, G; Hofmann, W; Hult, M; Inzhechik, L V; Ioannucci, L; Janicskó Csáthy, J; Jochum, J; Junker, M; Kihm, T; Kirpichnikov, I V; Kirsch, A; Klimenko, A; Knöpfle, K T; Kochetov, O; Kornoukhov, V N; Kuzminov, V V; Laubenstein, M; Lazzaro, A; Lebedev, V I; Lehnert, B; Liao, H Y; Lindner, M; Lippi, I; Liu, X; Lubashevskiy, A; Lubsandorzhiev, B; Lutter, G; Macolino, C; Machado, A A; Majorovits, B; Maneschg, W; Misiaszek, M; Nemchenok, I; Nisi, S; O'Shaughnessy, C; Pandola, L; Pelczar, K; Pessina, G; Pullia, A; Riboldi, S; Rumyantseva, N; Sada, C; Salathe, M; Schmitt, C; Schreiner, J; Schulz, O; Schwingenheuer, B; Schönert, S; Shevchik, E; Shirchenko, M; Simgen, H; Smolnikov, A; Stanco, L; Strecker, H; Tarka, M; Ur, C A; Vasenko, A A; Volynets, O; von Sturm, K; Wagner, V; Walter, M; Wegmann, A; Wester, T; Wojcik, M; Yanovich, E; Zavarise, P; Zhitnikov, I; Zhukov, S V; Zinatulina, D; Zuber, K; Zuzel, G

2013-09-20

Neutrinoless double beta decay is a process that violates lepton number conservation. It is predicted to occur in extensions of the standard model of particle physics. This Letter reports the results from phase I of the Germanium Detector Array (GERDA) experiment at the Gran Sasso Laboratory (Italy) searching for neutrinoless double beta decay of the isotope (76)Ge. Data considered in the present analysis have been collected between November 2011 and May 2013 with a total exposure of 21.6 kg yr. A blind analysis is performed. The background index is about 1 × 10(-2) counts/(keV kg yr) after pulse shape discrimination. No signal is observed and a lower limit is derived for the half-life of neutrinoless double beta decay of (76)Ge, T(1/2)(0ν) >2.1 × 10(25) yr (90% C.L.). The combination with the results from the previous experiments with (76)Ge yields T(1/2)(0ν)>3.0 × 10(25) yr (90% C.L.).

First-principles prediction of the structural, elastic, thermodynamic, electronic and optical properties of Li{sub 4}Sr{sub 3}Ge{sub 2}N{sub 6} quaternary nitride

Energy Technology Data Exchange (ETDEWEB)

Boudrifa, O. [Laboratory for Developing New Materials and their Characterization, University of Setif 1, 19000 Setif (Algeria); Bouhemadou, A., E-mail: a_bouhemadou@yahoo.fr [Laboratory for Developing New Materials and their Characterization, University of Setif 1, 19000 Setif (Algeria); Guechi, N. [Department of Physics, Faculty of Science, University of Setif 1, 19000 Setif (Algeria); Bin-Omran, S. [Department of Physics and Astronomy, College of Science, King Saud University, P.O. Box 2455, Riyadh 11451 (Saudi Arabia); Department of Physics, Faculty of Science and Humanitarian Studies, Salman Bin Abdalaziz University, Alkharj 11942 (Saudi Arabia); Al-Douri, Y. [Institute of Nano Electronic Engineering, Universiti Malaysia Perlis, 01000 Kangar, Perlis (Malaysia); Khenata, R. [Laboratoire de Physique Quantique et de Modélisation Mathématique (LPQ3M), Département de Technologie, Université de Mascara, 29000 Mascara (Algeria)

2015-01-05

Highlights: • Some physical properties of the quaternary nitride Li{sub 4}Sr{sub 3}Ge{sub 2}N{sub 6} have been predicted. • Elastic parameters reveal that Li{sub 4}Sr{sub 3}Ge{sub 2}N{sub 6} is mechanically stable but anisotropi. • Li{sub 4}Sr{sub 3}Ge{sub 2}N{sub 6} is an indirect semiconductor. • The fundamental indirect band gap changes to direct one under pressure effect. • The optical properties exhibit noticeable anisotropy. - Abstract: Structural parameters, elastic constants, thermodynamic properties, electronic structure and optical properties of the monoclinic Li{sub 4}Sr{sub 3}Ge{sub 2}N{sub 6} quaternary nitride are investigated theoretically for the first time using the pseudopotential plane-wave based first-principles calculations. The calculated structural parameters are in excellent agreement with the experimental data. This serves as a proof of reliability of the used theoretical method and gives confidence in the predicted results on aforementioned properties of Li{sub 4}Sr{sub 3}Ge{sub 2}N{sub 6}. The predicted elastic constants C{sub ij} reveal that Li{sub 4}Sr{sub 3}Ge{sub 2}N{sub 6} is mechanically stable but anisotropic. The elastic anisotropy is further illustrated by the direction-dependent of the linear compressibility and Young’s modulus. Macroscopic elastic parameters, including the bulk and shear moduli, the Young’s modulus, the Poisson ratio, the velocities of elastic waves and the Debye temperature are numerically estimated. The pressure and temperature dependence of the unit cell volume, isothermal bulk modulus, volume expansion coefficient, specific heat and Debye temperature are investigated through the quasiharmonic Debye model. The band structure and the density of states of Li{sub 4}Sr{sub 3}Ge{sub 2}N{sub 6} are analyzed, which reveals the semiconducting character of Li{sub 4}Sr{sub 3}Ge{sub 2}N{sub 6}. The complex dielectric function, refractive index, extinction coefficient, absorption coefficient, reflectivity

Possible production of glueballs in anti p-4He reactions at 0.6 GeV/c incident momentum

International Nuclear Information System (INIS)

Breivik, F.O.; Haatuft, A.; Halsteinslid, A.

1990-08-01

A fairly sharp peak at 1150 MeV/c 2 in the π - π + π - π + - system in the final state of anti p He-reactions at 0.6 GeV/c incident momentum is seen. The four-pion system may have spin = 0 or 2, which are possible spins of a glueball. 6 refs., 15 figs

Search for a 'top' threshold in hadronic e+e- annihilation at energies between 22 and 31.6 GeV

International Nuclear Information System (INIS)

Berger, C.; Genzel, H.; Grigull, R.; Lackas, W.; Raupach, F.; Ackermann, H.

1979-09-01

Results on e + e - annihilation into hadrons at c.m. energies between 22 and 31.6 GeV are presented. The data was accumulated with the PLUTO detector at PETRA. The events are dominantly of the two-jet type. The value of the relative hadronic cross section R = 3.88 +- 0.22 along with the details of the sphericity and thrust distribution rule out an open (t anti t) channel (Qsub(t) = 2/3) below 30 GeV. The inclusive muon results support the above conclusion. (orig.)

Experimental and theoretical investigations for site preference and anisotropic size change of RE{sub 11}Ge{sub 4}In{sub 6−x}M{sub x} (RE = La, Ce; M = Li, Ge; x = 1, 1.96)

Energy Technology Data Exchange (ETDEWEB)

Jeon, Beom-Yong; Jeon, Jieun [Department of Chemistry, Chungbuk National University, Cheongju, Chungbuk 361-763 (Korea, Republic of); Lee, Junseong [Department of Chemistry, Chonnam National University, Gwangju, Chonnam 500-757 (Korea, Republic of); Kim, Jongsik [Department of Chemistry, Dong-A University, Pusan 604-714 (Korea, Republic of); You, Tae-Soo [Department of Chemistry, Chungbuk National University, Cheongju, Chungbuk 361-763 (Korea, Republic of)

2015-01-25

Graphical abstract: Reported is experimental and theoretical studies to understand the site-preference between anionic elements and the anisotropic size-change of the 3-D anionic frameworks of two polar intermetallic compounds in the RE{sub 11}Ge{sub 4}In{sub 6−x}M{sub x} (RE = La, Ce; M = Li, Ge; x = 1, 1.96) phase. Indium atoms with a smaller electronegativity prefer to occupy the “dumbbell-site” having the smaller QVAL value, and the anisotropic size-change of the anionic framework in La{sub 11}Ge{sub 4}In{sub 5.00(1)}Li{sub 1.00} is rationalized by using various COHP curves analyses. - Highlights: • Site-preference between anions was elucidated by the QVAL value of each site. • Ten models with different atomic orderings were examined by coloring problems. • COHP curves explained the anisotropic size-change of La{sub 11}Ge{sub 4}In{sub 5.00(1)}Li{sub 1.00}. - Abstract: Two polar intermetallic compounds in the RE{sub 11}Ge{sub 4}In{sub 6−x}M{sub x} (RE = La, Ce; M = Li, Ge; x = 1, 1.96) series have been synthesized by conventional high-temperature reactions and characterized by both single-crystal and powder X-ray diffractions. Both compounds crystallized in the tetragonal crystal system (space group I4/mmm, Z = 4, Pearson symbol tI84) with nine crystallographically independent atomic positions in the asymmetric unit and adopted the Sm{sub 11}Ge{sub 4}In{sub 6}-type structure, which can be considered as an ordered version of the Ho{sub 11}Ge{sub 10}-type. The lattice parameters are a = 11.8370(4) Å and c = 17.2308(7) Å for La{sub 11}Ge{sub 4}In{sub 5.00(1)}Li{sub 1.00}; a = 11.8892(4) Å, c = 16.5736(7) Å for Ce{sub 11}Ge{sub 5.96(3)}In{sub 4.04}. The overall crystal structures of two isotypic compounds can be described as a combination of the cage-shaped 3-dimensional (3-D) anionic framework and three different types of cationic polyhedra filling the inside of the 3-D frameworks. Anionic elements consisting of the frameworks indicate the

Gamma-ray array physics

International Nuclear Information System (INIS)

Lister, C. J.

1999-01-01

In this contribution I am going to discuss the development of large arrays of Compton Suppressed, High Purity Germanium (HpGe) detectors and the physics that has been, that is being, and that will be done with them. These arrays and their science have dominated low-energy nuclear structure research for the last twenty years and will continue to do so in the foreseeable future. John Sharpey Schafer played a visionary role in convincing a skeptical world that the development of these arrays would lead to a path of enlightenment. The extent to which he succeeded can be seen both through the world-wide propagation of ever more sophisticated devices, and through the world-wide propagation of his students. I, personally, would not be working in research if it were not for Johns inspirational leadership. I am eternally grateful to him. Many excellent reviews of array physics have been made in the past which can provide detailed background reading. The review by Paul Nolan, another ex-Sharpey Schafer student, is particularly comprehensive and clear

Making a chocolate chip: development and evaluation of a 6K SNP array for Theobroma cacao.

Science.gov (United States)

Livingstone, Donald; Royaert, Stefan; Stack, Conrad; Mockaitis, Keithanne; May, Greg; Farmer, Andrew; Saski, Christopher; Schnell, Ray; Kuhn, David; Motamayor, Juan Carlos

2015-08-01

Theobroma cacao, the key ingredient in chocolate production, is one of the world's most important tree fruit crops, with ∼4,000,000 metric tons produced across 50 countries. To move towards gene discovery and marker-assisted breeding in cacao, a single-nucleotide polymorphism (SNP) identification project was undertaken using RNAseq data from 16 diverse cacao cultivars. RNA sequences were aligned to the assembled transcriptome of the cultivar Matina 1-6, and 330,000 SNPs within coding regions were identified. From these SNPs, a subset of 6,000 high-quality SNPs were selected for inclusion on an Illumina Infinium SNP array: the Cacao6kSNP array. Using Cacao6KSNP array data from over 1,000 cacao samples, we demonstrate that our custom array produces a saturated genetic map and can be used to distinguish among even closely related genotypes. Our study enhances and expands the genetic resources available to the cacao research community, and provides the genome-scale set of tools that are critical for advancing breeding with molecular markers in an agricultural species with high genetic diversity. © The Author 2015. Published by Oxford University Press on behalf of Kazusa DNA Research Institute.

Separated kaon electroproduction cross section and the kaon form factor from 6 GeV JLab data

NARCIS (Netherlands)

Carmignotto, M.; Ali, S.; Aniol, K.; Arrington, J.; Barrett, B.; Beise, E. J.; Blok, H. P.; Boeglin, W.; Brash, E. J.; Breuer, H.; Chang, C. C.; Christy, M. E.; Dittmann, A.; Ent, R.; Fenker, H.; Gaskell, D.; Gibson, E.; Holt, R. J.; Horn, T.; Huber, G. M.; Jin, S.; Jones, M. K.; Keppel, C. E.; Kim, W.; King, P. M.; Kovaltchouk, V.; Liu, J.; Lolos, G. J.; MacK, D. J.; Margaziotis, D. J.; Markowitz, P.; Matsumura, A.; Meekins, D.; Miyoshi, T.; Mkrtchyan, H.; Niculescu, G.; Niculescu, I.; Okayasu, Y.; Pegg, I. L.; Pentchev, L.; Perdrisat, C.; Potterveld, D.; Punjabi, V.; Reimer, P. E.; Reinhold, J.; Roche, J.; Sarty, A.; Smith, G. R.; Tadevosyan, V.; Volmer, J.

2018-01-01

The H1(e,e′K+)Λ reaction was studied as a function of the Mandelstam variable -t using data from the E01-004 (FPI-2) and E93-018 experiments that were carried out in Hall C at the 6 GeV Jefferson Laboratory. The cross section was fully separated into longitudinal and transverse components, and two

Seeking a Philosophy of Music in Higher Education: The Case of Mid-Nineteenth Century Edinburgh

Science.gov (United States)

Golding, Rosemary

2016-01-01

In 1851-2 the Trustees of the Reid bequest at the University of Edinburgh undertook an investigation into music education. Concerned that the funds which supported the Chair of Music should be spent as efficiently and effectively as possible, they consulted professional and academic musicians in search of new forms of teaching music at university…

Production, characterization and operation of Ge enriched BEGe detectors in GERDA

Science.gov (United States)

Agostini, M.; Allardt, M.; Andreotti, E.; Bakalyarov, A. M.; Balata, M.; Barabanov, I.; Barros, N.; Baudis, L.; Bauer, C.; Becerici-Schmidt, N.; Bellotti, E.; Belogurov, S.; Belyaev, S. T.; Benato, G.; Bettini, A.; Bezrukov, L.; Bode, T.; Borowicz, D.; Brudanin, V.; Brugnera, R.; Budjáš, D.; Caldwell, A.; Cattadori, C.; Chernogorov, A.; D'Andrea, V.; Demidova, E. V.; Domula, A.; Egorov, V.; Falkenstein, R.; Freund, K.; Frodyma, N.; Gangapshev, A.; Garfagnini, A.; Gotti, C.; Grabmayr, P.; Gurentsov, V.; Gusev, K.; Hegai, A.; Heisel, M.; Hemmer, S.; Heusser, G.; Hofmann, W.; Hult, M.; Inzhechik, L. V.; Ioannucci, L.; Janicskó Csáthy, J.; Jochum, J.; Junker, M.; Kazalov, V.; Kihm, T.; Kirpichnikov, I. V.; Kirsch, A.; Klimenko, A.; Knöpfle, K. T.; Kochetov, O.; Kornoukhov, V. N.; Kuzminov, V. V.; Laubenstein, M.; Lazzaro, A.; Lebedev, V. I.; Lehnert, B.; Liao, H. Y.; Lindner, M.; Lippi, I.; Lubashevskiy, A.; Lubsandorzhiev, B.; Lutter, G.; Macolino, C.; Majorovits, B.; Maneschg, W.; Misiaszek, M.; Nemchenok, I.; Nisi, S.; O'Shaughnessy, C.; Palioselitis, D.; Pandola, L.; Pelczar, K.; Pessina, G.; Pullia, A.; Riboldi, S.; Rumyantseva, N.; Sada, C.; Salathe, M.; Schmitt, C.; Schreiner, J.; Schulz, O.; Schütz, A.-K.; Schwingenheuer, B.; Schönert, S.; Shevchik, E.; Shirchenko, M.; Simgen, H.; Smolnikov, A.; Stanco, L.; Strecker, H.; Ur, C. A.; Vanhoefer, L.; Vasenko, A. A.; von Sturm, K.; Wagner, V.; Walter, M.; Wegmann, A.; Wester, T.; Wilsenach, H.; Wojcik, M.; Yanovich, E.; Zavarise, P.; Zhitnikov, I.; Zhukov, S. V.; Zinatulina, D.; Zuber, K.; Zuzel, G.

2015-02-01

The GERmanium Detector Array ( Gerda) at the Gran Sasso Underground Laboratory (LNGS) searches for the neutrinoless double beta decay () of Ge. Germanium detectors made of material with an enriched Ge fraction act simultaneously as sources and detectors for this decay. During Phase I of theexperiment mainly refurbished semi-coaxial Ge detectors from former experiments were used. For the upcoming Phase II, 30 new Ge enriched detectors of broad energy germanium (BEGe)-type were produced. A subgroup of these detectors has already been deployed in Gerda during Phase I. The present paper reviews the complete production chain of these BEGe detectors including isotopic enrichment, purification, crystal growth and diode production. The efforts in optimizing the mass yield and in minimizing the exposure of the Ge enriched germanium to cosmic radiation during processing are described. Furthermore, characterization measurements in vacuum cryostats of the first subgroup of seven BEGe detectors and their long-term behavior in liquid argon are discussed. The detector performance fulfills the requirements needed for the physics goals of Gerda Phase II.

Structure and stability of M6N8 clusters (M = Si, Ge, Sn, Ti).

Science.gov (United States)

Davydova, Elena I; Timoshkin, Alexey Y; Frenking, Gernot

2010-06-10

The structures and stabilities of the M(6)N(8) clusters (M = Si, Ge, Sn, Ti) have been theoretically studied at DFT and ab initio levels of theory. Two new isomers have been considered: cage-like molecules and propeller-like molecules. It is shown that only for M = Si are both isomers true minima on the potential energy surface. The thermodynamics of the dissociation process (1/6)M(6)N(8) --> (1/3)M(3)N(4) is discussed. For each M(3)N(4) molecule, four structures with different multiplicity are considered. The thermodynamic analysis shows that independently of the multiplicity of M(3)N(4) nitrides all M(6)N(8) clusters are stable in the gas phase in a wide temperature range and could be potential intermediates in chemical vapor deposition of the nitride materials.

The William Houston Medal of the Royal College of Surgeons of Edinburgh 2002.

Science.gov (United States)

Teague, A M

2004-06-01

The William Houston medal is a prestigious prize awarded to the individual achieving the most outstanding examination performance at the Membership in Orthodontics examination for the Royal College of Surgeons of Edinburgh. Five clinical cases treated by the candidate are presented as part of the final examination; two of these cases are described below. The first a Class III malocclusion, and the second a Class II division 1 malocclusion, were both treated by orthodontic camouflage.

Photoconductor arrays for a spectral-photometric far-infrared camera on SOFIA

Science.gov (United States)

Wolf, Juergen; Driescher, Hans; Schubert, Josef; Rabanus, D.; Paul, E.; Roesner, K.

1998-04-01

The Stratospheric Observatory for Infrared Astronomy, SOFIA, is a joint US and German project and will start observations from altitudes up to 45,000 ft in late 2001. The 2.5 m telescope is being developed in Germany while the 747- aircraft modifications and preparation of the observatory's operations center is done by a US consortium. Several research institutions and universities of both countries have started to develop science instruments. The DLR Institute of Space Sensor Technology in Berlin plans on a spectral-photometric camera working in the 20 to 220 micrometers wavelength range, using doped silicon and germanium extrinsic photoconductors in large, 2D arrays: silicon blocked-impurity band detectors, Ge:Ga and stressed Ge:Ga. While the silicon array will be commercially available, the germanium arrays have to be developed, including their cryogenic multiplexers. Partner institutions in Germany and the US will support the development of the instrument and its observations.

High-speed Si/GeSi hetero-structure Electro Absorption Modulator.

Science.gov (United States)

Mastronardi, L; Banakar, M; Khokhar, A Z; Hattasan, N; Rutirawut, T; Bucio, T Domínguez; Grabska, K M; Littlejohns, C; Bazin, A; Mashanovich, G; Gardes, F Y

2018-03-19

The ever-increasing demand for integrated, low power interconnect systems is pushing the bandwidth density of CMOS photonic devices. Taking advantage of the strong Franz-Keldysh effect in the C and L communication bands, electro-absorption modulators in Ge and GeSi are setting a new standard in terms of device footprint and power consumption for next generation photonics interconnect arrays. In this paper, we present a compact, low power electro-absorption modulator (EAM) Si/GeSi hetero-structure based on an 800 nm SOI overlayer with a modulation bandwidth of 56 GHz. The device design and fabrication tolerant process are presented, followed by the measurement analysis. Eye diagram measurements show a dynamic ER of 5.2 dB at a data rate of 56 Gb/s at 1566 nm, and calculated modulator power is 44 fJ/bit.

The Edinburgh experience of fast neutron therapy

International Nuclear Information System (INIS)

Duncan, W.; Arnott, S.J.; Orr, J.A.; Kerr, G.R.

1982-01-01

The Edinburgh experience is based on a d(15 + Be) neutron beam generated by a compact CS 30 Cyclotron. The facility has an iso-center treatment head providing 240 0 of rotation. The most important limitation of the beam is its poor penetrating quality. We have compared neutron therapy alone given in 20 daily fractions over four weeks with photon therapy given in the same fractionation schedule. Since clinical studies began in March, 1977, over 500 patients have been treated by fast neutrons. Almost all patients are now admitted to randomly controlled trials. In the head and neck trial conducted in collaboraton with colleagues in Amsterdam and Essen, 92 patients are available for analysis. Most patients had T3 lesions and about 50% had involved nodes. The cumulative regression rate at six months is similar after neutrons and photons (75%). Later recurrence rates (36%) are also similar. The early radiation morbidity is similar in both groups, but the late reactions are greater after neutrons (15%) than photons (6%). Overall survival is better after photon therapy. A trial of patients with glioblastoma has also shown a better survival after photon therapy. Neutron therapy was associated with demelinization in three of 18 patients. Patients with transitional cell cancer of the bladder have also been the subject of study. Local tumor control was similar (53%) after neutrons and photons. Late radiation morbidity was much greater after neutrons (20%), compared with photons (2%). In a trial of advanced carcinoma of the rectum, the local tumor control was also similar after neutrons and photons (30%), but morbidity was greater after neutrons. Soft tissue sarcomas have shown response rates (37%) that may be expected after photon therapy

Propagation of GeV neutrinos through Earth

Science.gov (United States)

Olivas, Yaithd Daniel; Sahu, Sarira

2018-06-01

We have studied the Earth matter effect on the oscillation of upward going GeV neutrinos by taking into account the three active neutrino flavors. For neutrino energy in the range 3 to 12 GeV we observed three distinct resonant peaks for the oscillation process νe ↔νμ,τ in three distinct densities. However, according to the most realistic density profile of the Earth, the second peak at neutrino energy 6.18 GeV corresponding to the density 6.6 g/cm3 does not exist. So the resonance at this energy can not be of MSW-type. For the calculation of observed flux of these GeV neutrinos on Earth, we considered two different flux ratios at the source, the standard scenario with the flux ratio 1 : 2 : 0 and the muon damped scenario with 0 : 1 : 0. It is observed that at the detector while the standard scenario gives the observed flux ratio 1 : 1 : 1, the muon damped scenario has a different ratio. For muon damped case with Eν 20 GeV, we get the average Φνe ∼ 0 and Φνμ ≃Φντ ≃ 0.45. The upcoming PINGU will be able to shed more light on the nature of the resonance in these GeV neutrinos and hopefully will also be able to discriminate among different processes of neutrino production at the source in GeV energy range.

Optical transitions in Ge/SiGe multiple quantum wells with Ge-rich barriers

Science.gov (United States)

Bonfanti, M.; Grilli, E.; Guzzi, M.; Virgilio, M.; Grosso, G.; Chrastina, D.; Isella, G.; von Känel, H.; Neels, A.

2008-07-01

Direct-gap and indirect-gap transitions in strain-compensated Ge/SiGe multiple quantum wells with Ge-rich SiGe barriers have been studied by optical transmission spectroscopy and photoluminescence experiments. An sp3d5s∗ tight-binding model has been adopted to interpret the experimental results. Photoluminescence spectra and their comparison with theoretical calculations prove the existence of type-I band alignment in compressively strained Ge quantum wells grown on relaxed Ge-rich SiGe buffers. The high quality of the transmission spectra opens up other perspectives for application of these structures in near-infrared optical modulators.

Wasser-Governance matters : 15. World Water Congress vom 25. bis 28. Mai 2015 in Edinburgh, Schottland

NARCIS (Netherlands)

Hartmann, T.; Jílková, Jiřina

2015-01-01

Der World Water Congress 2015 in Edinburgh hat eine deutliche Tendenz hin zu Wasser-Governance gezeigt. Die technischen Ansätze und Lösungen werden zwar berücksichtigt, jedoch nicht mehr als wichtigste Maßnahmen aufgefasst. Diese Veränderung einer Fachplanung kann und darf von der Raumplanung nicht

The CARDS array for neutron-rich decay spectroscopy at HRIBF

CERN Document Server

Batchelder, J C; Bingham, C R; Carter, H K; Cole, J D; Fong, D; Garrett, P E; Grzywacz, R; Hamilton, J H; Hartley, D J; Hwang, J K; Krolas, W; Kulp, D C; Larochelle, Y; Piechaczek, A; Ramayya, A V; Rykaczewski, K; Spejewski, E H; Stracener, D W; Tantawy, M N; Winger, J A; Wood, J; Zganjar, E F

2003-01-01

An array for decay studies of neutron-rich nuclei has been commissioned for use at the UNISOR separator at Holifield Radioactive Ion Beam Facility. This array consists of three segmented clover Ge detectors, plastic scintillators, and a high-resolution (approx 1 keV) Si conversion electron spectrometer. These detectors are mounted on a support that surrounds a moving tape collector. This system has been named clover array for radioactive decay studies. The detectors have been outfitted with digital flash ADCs (XIA DGFs) that fit the preamp signals, with built-in pileup rejection.

The CARDS array for neutron-rich decay spectroscopy at HRIBF

International Nuclear Information System (INIS)

Batchelder, J.C.; Bilheux, J.-C.; Bingham, C.R.; Carter, H.K.; Cole, J.D.; Fong, D.; Garrett, P.E.; Grzywacz, R.; Hamilton, J.H.; Hartley, D.J.; Hwang, J.K.; Krolas, W.; Kulp, D.; Larochelle, Y.; Piechaczek, A.; Ramayya, A.V.; Rykaczewski, K.P.; Spejewski, E.H.; Stracener, D.W.; Tantawy, M.N.; Winger, J.A.; Wood, J.; Zganjar, E.F.

2003-01-01

An array for decay studies of neutron-rich nuclei has been commissioned for use at the UNISOR separator at Holifield Radioactive Ion Beam Facility. This array consists of three segmented clover Ge detectors, plastic scintillators, and a high-resolution (∼1 keV) Si conversion electron spectrometer. These detectors are mounted on a support that surrounds a moving tape collector. This system has been named clover array for radioactive decay studies. The detectors have been outfitted with digital flash ADCs (XIA DGFs) that fit the preamp signals, with built-in pileup rejection

Self-assembly of Ge quantum dots on periodically corrugated Si surfaces

International Nuclear Information System (INIS)

Buljan, M.; Jerčinović, M.; Radić, N.; Facsko, S.; Baehtz, C.; Muecklich, A.; Grenzer, J.; Delač Marion, I.; Mikšić Trontl, V.; Kralj, M.; Holý, V.

2015-01-01

The fabrication of regularly ordered Ge quantum dot arrays on Si surfaces usually requires extensive preparation processing, ensuring clean and atomically ordered substrates, while the ordering parameters are quite limited by the surface properties of the substrate. Here, we demonstrate a simple method for fabrication of ordered Ge quantum dots with highly tunable ordering parameters on rippled Si surfaces. The ordering is achieved by magnetron sputter deposition, followed by an annealing in high vacuum. We show that the type of ordering and lattice vector parameters of the formed Ge quantum dot lattice are determined by the crystallographic properties of the ripples, i.e., by their shape and orientation. Moreover, the ordering is achieved regardless the initial amorphisation of the ripples surface and the presence of a thin oxide layer

Search for Neutrinoless Double-β Decay in Ge 76 with the Majorana Demonstrator

Science.gov (United States)

Aalseth, C. E.; Abgrall, N.; Aguayo, E.; Alvis, S. I.; Amman, M.; Arnquist, I. J.; Avignone, F. T.; Back, H. O.; Barabash, A. S.; Barbeau, P. S.; Barton, C. J.; Barton, P. J.; Bertrand, F. E.; Bode, T.; Bos, B.; Boswell, M.; Bradley, A. W.; Brodzinski, R. L.; Brudanin, V.; Busch, M.; Buuck, M.; Caldwell, A. S.; Caldwell, T. S.; Chan, Y.-D.; Christofferson, C. D.; Chu, P.-H.; Collar, J. I.; Combs, D. C.; Cooper, R. J.; Cuesta, C.; Detwiler, J. A.; Doe, P. J.; Dunmore, J. A.; Efremenko, Yu.; Ejiri, H.; Elliott, S. R.; Fast, J. E.; Finnerty, P.; Fraenkle, F. M.; Fu, Z.; Fujikawa, B. K.; Fuller, E.; Galindo-Uribarri, A.; Gehman, V. M.; Gilliss, T.; Giovanetti, G. K.; Goett, J.; Green, M. P.; Gruszko, J.; Guinn, I. S.; Guiseppe, V. E.; Hallin, A. L.; Haufe, C. R.; Hehn, L.; Henning, R.; Hoppe, E. W.; Hossbach, T. W.; Howe, M. A.; Jasinski, B. R.; Johnson, R. A.; Keeter, K. J.; Kephart, J. D.; Kidd, M. F.; Knecht, A.; Konovalov, S. I.; Kouzes, R. T.; LaFerriere, B. D.; Leon, J.; Lesko, K. T.; Leviner, L. E.; Loach, J. C.; Lopez, A. M.; Luke, P. N.; MacMullin, J.; MacMullin, S.; Marino, M. G.; Martin, R. D.; Massarczyk, R.; McDonald, A. B.; Mei, D.-M.; Meijer, S. J.; Merriman, J. H.; Mertens, S.; Miley, H. S.; Miller, M. L.; Myslik, J.; Orrell, J. L.; O'Shaughnessy, C.; Othman, G.; Overman, N. R.; Perumpilly, G.; Pettus, W.; Phillips, D. G.; Poon, A. W. P.; Pushkin, K.; Radford, D. C.; Rager, J.; Reeves, J. H.; Reine, A. L.; Rielage, K.; Robertson, R. G. H.; Ronquest, M. C.; Ruof, N. W.; Schubert, A. G.; Shanks, B.; Shirchenko, M.; Snavely, K. J.; Snyder, N.; Steele, D.; Suriano, A. M.; Tedeschi, D.; Tornow, W.; Trimble, J. E.; Varner, R. L.; Vasilyev, S.; Vetter, K.; Vorren, K.; White, B. R.; Wilkerson, J. F.; Wiseman, C.; Xu, W.; Yakushev, E.; Yaver, H.; Young, A. R.; Yu, C.-H.; Yumatov, V.; Zhitnikov, I.; Zhu, B. X.; Zimmermann, S.; Majorana Collaboration

2018-03-01

The Majorana Collaboration is operating an array of high purity Ge detectors to search for neutrinoless double-β decay in Ge 76 . The Majorana Demonstrator comprises 44.1 kg of Ge detectors (29.7 kg enriched in Ge 76 ) split between two modules contained in a low background shield at the Sanford Underground Research Facility in Lead, South Dakota. Here we present results from data taken during construction, commissioning, and the start of full operations. We achieve unprecedented energy resolution of 2.5 keV FWHM at Qβ β and a very low background with no observed candidate events in 9.95 kg yr of enriched Ge exposure, resulting in a lower limit on the half-life of 1.9 ×1025 yr (90% C.L.). This result constrains the effective Majorana neutrino mass to below 240-520 meV, depending on the matrix elements used. In our experimental configuration with the lowest background, the background is 4.0-2.5+3.1 counts /(FWHM t yr ) .

Inclusive. pi. /sup 0/ production by e/sup +/e/sup -/ annihilation at 34. 6 GeV center of mass energy

Energy Technology Data Exchange (ETDEWEB)

Braunschweig, W; Gerhards, R; Kirschfink, F J; Martyn, H U; Rosskamp, P; Vogel, E; Wallraff, W; Bock, B; Eisenmann, J; Fischer, H M

1986-11-01

The cross section for the process e/sup +/e/sup -/->..pi../sup 0/ + anything has been measured at an average Center of mass energy of 34.6 GeV for ..pi../sup 0/ energies between 0.7 and 17 GeV. The angular distribution for ..pi../sup 0/ energies larger than 2 GeV is of the form dsigma/d..cap omega..propor to1 + A cos/sup 2/theta, with A = 1.2+-0.5. The ratio of ..pi../sup 0/ to ..pi../sup +-/ production in the measured energy range is 2sigma(..pi../sup 0/)/(sigma(..pi../sup +/)+sigma(..pi../sup -/)) = 1.13+-0.18. The form of the differential cross sections agrees within the errors. The mean ..pi../sup 0/ multiplicity is 5.8+-0.9.

Remote plasma enhanced chemical deposition of non-crystalline GeO2 on Ge and Si substrates.

Science.gov (United States)

Lucovsky, Gerald; Zeller, Daniel

2011-09-01

Non-crystalline GeO2 films remote were plasma deposited at 300 degrees C onto Ge substrates after a final rinse in NH4OH. The reactant precursors gas were: (i) down-stream injected 2% GeH4 in He as the Ge precursor, and (ii) up-stream, plasma excited O2-He mixtures as the O precursor. Films annealed at 400 degrees C displayed no evidence for loss of O resulting in Ge sub-oxide formation, and for a 5-6 eV mid-gap absorption associated with formation of GeOx suboxide bonding, x deposited on Ge and annealed at 600 degrees C and 700 degrees C display spectra indicative of loss of O-atoms, accompanied with a 5.5 eV absorption. X-ray absorption spectroscopy and many-electron theory are combined to describe symmetries and degeneracies for O-vacancy bonding defects. These include comparisons with remote plasma-deposited non-crystalline SiO2 on Si substrates with SiON interfacial layers. Three different properties of remote plasma GeO2 films are addressed comparisons between (i) conduction band and band edge states of GeO2 and SiO2, and (ii) electronic structure of O-atom vacancy defects in GeO2 and SiO2, and differences between (iii) annealing of GeO2 films on Ge substrates, and Si substrates passivated with SiON interfacial transition regions important for device applications.

Mn-Rich Nanostructures in Ge1-xMnx: Fabrication, Microstructure, and Magnetic Properties

Directory of Open Access Journals (Sweden)

Ying Jiang

2012-01-01

Full Text Available Magnetic semiconductors have attracted extensive attention due to their novel physical properties as well as the potential applications in future spintronics devices. Over the past decade, tremendous efforts have been made in the diluted magnetic semiconductors (DMS system, with many controversies disentangled but many puzzles unsolved as well. Here in this paper, we summarize recent experimental results in the growth, microstructure and magnetic properties of Ge-based DMSs (mainly Ge1-xMnx, which have been comprehensively researched owing to their compatibility with Si microelectronics. Growth conditions of high-quality, defect-free, and magnetic Ge1-xMnx bulks, thin films, ordered arrays, quantum dots, and nanowires are discussed in detail.

Analysis of mean time to data loss of fault-tolerant disk arrays RAID-6 based on specialized Markov chain

Science.gov (United States)

Rahman, P. A.; D'K Novikova Freyre Shavier, G.

2018-03-01

This scientific paper is devoted to the analysis of the mean time to data loss of redundant disk arrays RAID-6 with alternation of data considering different failure rates of disks both in normal state of the disk array and in degraded and rebuild states, and also nonzero time of the disk replacement. The reliability model developed by the authors on the basis of the Markov chain and obtained calculation formula for estimation of the mean time to data loss (MTTDL) of the RAID-6 disk arrays are also presented. At last, the technique of estimation of the initial reliability parameters and examples of calculation of the MTTDL of the RAID-6 disk arrays for the different numbers of disks are also given.

The Low Temperature Epitaxy of Strained GeSn Layers Using RTCVD System

Science.gov (United States)

Kil, Yeon-Ho; Yuk, Sim-Hoon; Jang, Han-Soo; Lee, Sang-Geul; Choi, Chel-Jong; Shim, Kyu-Hwan

2018-03-01

We have investigated the low temperature (LT) growth of GeSn-Ge-Si structures using rapid thermal chemical vapor deposition system utilizing Ge2H6 and SnCl4 as the reactive precursors. Due to inappropriate phenomena, such as, Ge etch and Sn segregation, it was hard to achieve high quality GeSn epitaxy at the temperature > 350 °C. On the contrary, we found that the SnCl4 promoted the reaction of Ge2H6 precursors in a certain process condition of LT, 240-360 °C. In return, we could perform the growth of GeSn epi layer with 7.7% of Sn and its remaining compressive strain of 71.7%. The surface propagated defects were increased with increasing the Sn content in the GeSn layer confirmed by TEM analysis. And we could calculate the activation energies at lower GeSn growth temperature regime using by Ge2H6 and SnCl4 precursors about 0.43 eV.

A high performance Ge/Si0.5Ge0.5/Si heterojunction dual sources tunneling transistor with a U-shaped channel

Science.gov (United States)

Li, Wei; Liu, Hongxia; Wang, Shulong; Wang, Qianqiong; Chen, Shupeng

2017-06-01

In this paper, a new Ge/Si0.5Ge0.5/Si heterojunction dual sources tunneling transistor with a U-shaped channel (Ge_DUTFET) is proposed and investigated by Silvaco-Atlas simulation. The line tunneling perpendicular to channel and point tunneling parallel to channel simultaneously occur on both sides of the gate. The Ge is chosen as the source region material to increase the line tunneling current. The designed heterojunction between the Ge source and Si channel decreases the point tunneling barrier width to enhance the point tunneling current. And this heterojunction can also promote the Ge_DUTFET to occur point tunneling at the small gate voltage, which makes it obtain the smaller turn-on voltage. Furthermore, the Si0.5Ge0.5 buffer layer is also helpful for the enhancement of performance. The simulation results reveal that Ge_DUTFET has the better performance compared with the Si_DUTFET. The on-state current and average subthreshold swing of Ge_DUTFET are 1.11 × 10-5A/μm and 35.1mV/dec respectively. The max cut-off frequency (fT) and gain bandwidth product (GBW) are 26.6 GHz and 16.6 GHz respectively. The fT and GBW of the Ge_DUTFET are respectively increased by ∼27.4% and ∼84.3% compared with the Si_DUTFET.

Measurement of ππ-scattering in the reaction π-p → π0π0n at 6,8 and 12 GeV/c

International Nuclear Information System (INIS)

Apel, W.D.; Auslaender, J.S.; Mueller, H.; Rehak, P.; Sigurdsson, G.; Staudenmaier, H.M.; Stier, U.

1975-06-01

Data in the ππ-mass region 0.6 to 1.6 GeV/c 2 are analysed. π 0 π 0 -mass spectra and angular distributions near 1.0 GeV/c 2 reflect the strong coupling of the KantiK-system near threshold to ππ. Below the f 0 -meson a large s-wave contribution is observed. We compare our π 0 π 0 -data with the ambiguous phase shift solution of the CERN-Munich group. (orig.) [de

Activation and thermal stability of ultra-shallow B+-implants in Ge

DEFF Research Database (Denmark)

Yates, B. R.; Darby, B. L.; Petersen, Dirch Hjorth

2012-01-01

The activation and thermal stability of ultra-shallow B+ implants in crystalline (c-Ge) and preamorphized Ge (PA-Ge) following rapid thermal annealing was investigated using micro Hall effect and ion beam analysis techniques. The residual implanted dose of ultra-shallow B+ implants in Ge...... from 5.0 × 1013 to 5.0 × 1015 cm-2 was studied using micro Hall effect measurements after annealing at 400-600 °C for 60 s. For both c-Ge and PA-Ge, a large fraction of the implanted dose is rendered inactive due to the formation of a presumable B-Ge cluster. The B lattice location in samples annealed...... was characterized using elastic recoil detection and was determined to correlate well with simulations with a dose loss of 23.2%, 21.4%, and 17.6% due to ion backscattering for 2, 4, and 6 keV implants in Ge, respectively. The electrical activation of ultra-shallow B+ implants at 2, 4, and 6 keV to fluences ranging...

Structural Analyses of Phase Stability in Amorphous and Partially Crystallized Ge-Rich GeTe Films Prepared by Atomic Layer Deposition.

Science.gov (United States)

Gwon, Taehong; Mohamed, Ahmed Yousef; Yoo, Chanyoung; Park, Eui-Sang; Kim, Sanggyun; Yoo, Sijung; Lee, Han-Koo; Cho, Deok-Yong; Hwang, Cheol Seong

2017-11-29

The local bonding structures of Ge x Te 1-x (x = 0.5, 0.6, and 0.7) films prepared through atomic layer deposition (ALD) with Ge(N(Si(CH 3 ) 3 ) 2 ) 2 and ((CH 3 ) 3 Si) 2 Te precursors were investigated using Ge K-edge X-ray absorption spectroscopy (XAS). The results of the X-ray absorption fine structure analyses show that for all of the compositions, the as-grown films were amorphous with a tetrahedral Ge coordination of a mixture of Ge-Te and Ge-Ge bonds but without any signature of Ge-GeTe decomposition. The compositional evolution in the valence band electronic structures probed through X-ray photoelectron spectroscopy suggests a substantial chemical influence of additional Ge on the nonstoichiometric GeTe. This implies that the ALD process can stabilize Ge-abundant bonding networks like -Te-Ge-Ge-Te- in amorphous GeTe. Meanwhile, the XAS results on the Ge-rich films that had undergone post-deposition annealing at 350 °C show that the parts of the crystalline Ge-rich GeTe became separated into Ge crystallites and rhombohedral GeTe in accordance with the bulk phase diagram, whereas the disordered GeTe domains still remained, consistent with the observations of transmission electron microscopy and Raman spectroscopy. Therefore, amorphousness in GeTe may be essential for the nonsegregated Ge-rich phases and the low growth temperature of the ALD enables the achievement of the structurally metastable phases.

A 13-element Ge detector for fluorescence EXAFS

International Nuclear Information System (INIS)

Cramer, S.P.; Tench, O.; Yocum, M.; George, G.N.

1988-01-01

At low concentrations, recording X-ray absorption spectra in fluorescence excitation mode is more sensitive than transmission mode. For dilute samples, the fluorescence signal is often obscured by scattered X-rays, and matrix and filter fluorescence. To discriminate against this background, while maintaining a large angular acceptance and high count rate capability, we have constructed a new detection system based on an array of intrinsic Ge detectors. The device uses 13 individuall 11 mm diameter Ge detectors, clustered in a 1:3:5:3:1 pattern on a common cryostat, combined with Soller slits and filters to reduce the background signals. Pulsed optical feedback preamplifiers are followed by Gaussian-shaping amplifiers having fast discriminators to register the incoming count rate (ICR). Correction for dead time using the ICR signal allowed operation in the vicinity of 75 kHz per channel, with a 1 μs shaping time at 6 keV. For lower count rate applications, an average resolution of 160 eV at 5.9 keV was obtained with 8 μs shaping. Recent experience with this detector at the Stanford Synchrotron Radiation Laboratory is presented. The performance is illustrated using spectra obtained from phosphorus compounds and a thin iridium foil. The performance of this device is compared with previous fluorescence detection schemes, such as those using filter/slit combinations or barrel monochromators. (orig.)

Measurement of the Parity-Violating Asymmetry in Deep Inelastic Scattering at JLab 6 GeV

International Nuclear Information System (INIS)

Wang, Diancheng

2013-01-01

The parity-violating asymmetry in deep inelastic scattering (PVDIS) offers us a useful tool to study the weak neutral couplings and the hadronic structure of the nucleon, and provides high precision tests on the Standard Model. During the 6 GeV PVDIS experiment at the Thomas Jefferson National Accelerator Facility, the parity-violating asymmetries A PV of a polarized electron beam scattering off an unpolarized deuteron target in the deep inelastic scattering region were precisely measured at two Q 2 values of 1.1 and 1.9 (GeV/c) 2 . The asymmetry at Q 2 =1.9 (GeV/c) 2 can be used to extract the weak coupling combination 2C 2u - C 2d , assuming the higher twist effect is small. The extracted result from this measurement is in good agreement with the Standard Model prediction, and improves the precision by a factor of five over previous data. In addition, combining the asymmetries at both Q 2 values provides us extra knowledge on the higher twist effects. The parity violation asymmetries in the resonance region were also measured during this experiment. These results are the first A PV data in the resonance region beyond the Δ(1232). They provide evidence that the quark hadron duality works for A PV at the (10-15)% level, and set constraints on nucleon resonance models that are commonly used for background calculations to other parity-violating electron scattering measurements

Temperature dependence of the interband critical points of bulk Ge and strained Ge on Si

Science.gov (United States)

Fernando, Nalin S.; Nunley, T. Nathan; Ghosh, Ayana; Nelson, Cayla M.; Cooke, Jacqueline A.; Medina, Amber A.; Zollner, Stefan; Xu, Chi; Menendez, Jose; Kouvetakis, John

2017-11-01

Epitaxial Ge layers on a Si substrate experience a tensile biaxial stress due to the difference between the thermal expansion coefficients of the Ge epilayer and the Si substrate, which can be measured using asymmetric X-ray diffraction reciprocal space maps. This stress depends on temperature and affects the band structure, interband critical points, and optical spectra. This manuscripts reports careful measurements of the temperature dependence of the dielectric function and the interband critical point parameters of bulk Ge and Ge epilayers on Si using spectroscopic ellipsometry from 80 to 780 K and from 0.8 to 6.5 eV. The authors find a temperature-dependent redshift of the E1 and E1 + Δ1 critical points in Ge on Si (relative to bulk Ge). This redshift can be described well with a model based on thermal expansion coefficients, continuum elasticity theory, and the deformation potential theory for interband transitions. The interband transitions leading to E0‧ and E2 critical points have lower symmetry and therefore are not affected by the stress.

Radical Contagion and Healthy Literature in Blackwood's Edinburgh Magazine.

Science.gov (United States)

Roberts, Jessica

During the late eighteenth and early nineteenth centuries, the revolution in France served as a catalyst for heavily allegorical political rhetoric, and the idea that radical politics were contagious became commonplace in conservative writing and oratory. This political contagion is described by Blackwood's as raging through the ranks of the rural poor as late as 1830. Confronted by this threat, Blackwood's promoted itself alternatively as a stimulant or as a cure for the metaphorical poison or infection that radical publications were seen to be spreading amongst the poor. Blackwood's also strove to maintain the political health of its readership by identifying healthy literature for its readers and the lower order. This article analyzes Blackwood's Edinburgh Magazine's application of the vocabulary of disease and contagion to radical politics and publications, and considers questions of taste, class, and Britishness in discussions of healthy reading habits.

The use of Edinburgh Postnatal Depression Scale to identify postnatal depression symptoms at well child visit

Directory of Open Access Journals (Sweden)

Silvestri Maria

2009-10-01

Full Text Available Abstract Objectives 1 to evaluate the role of the pediatrician in detecting postnatal depression (PD symptoms by the Edinburgh Postnatal Depression Scale (EPDS; 2 to detect factors increasing the risk of PD and, 3 to assess the importance of scores gained from fathers' questionnaire. Methods we surveyed 1122 mothers and 499 fathers who were assessed using the EPDS during the first well-child visit. After 5 weeks, high scoring parents, completed a second EPDS. High scoring parents were examined by a psychiatrist who had to confirm the PD diagnosis. Results 26.6% of mothers and 12.6% of fathers at the first visit, 19.0% of mothers and 9.1% of fathers at the second visit, gained scores signaling the risk of PD. Four mothers and two fathers had confirmed PD diagnosis. Younger maternal age, non-Italian nationality and low socio-economic condition were related to higher EPDS scores. Conclusion PD is common in the average population. Using a simple and standardized instrument, pediatricians are able to detect parents with higher risk of suffering from PD.

Si/Ge intermixing during Ge Stranski–Krastanov growth

Directory of Open Access Journals (Sweden)

Alain Portavoce

2014-12-01

Full Text Available The Stranski–Krastanov growth of Ge islands on Si(001 has been widely studied. The morphology changes of Ge islands during growth, from nucleation to hut/island formation and growth, followed by hut-to-dome island transformation and dislocation nucleation of domes, have been well described, even at the atomic scale, using techniques such as scanning tunneling microscopy and transmission electron microscopy. Although it is known that these islands do not consist of pure Ge (due to Si/Ge intermixing, the composition of the Ge islands is not precisely known. In the present work, atom probe tomography was used to study the composition of buried dome islands at the atomic scale, in the three-dimensional space. The core of the island was shown to contain about 55 atom % Ge, while the Ge composition surrounding this core decreases rapidly in all directions in the islands to reach a Ge concentration of about 15 atom %. The Ge distribution in the islands follows a cylindrical symmetry and Ge segregation is observed only in the {113} facets of the islands. The Ge composition of the wetting layer is not homogeneous, varying from 5 to 30 atom %.

First results of neutrinoless double beta decay search with the GERmanium Detector Array "GERDA"

Science.gov (United States)

Janicskó Csáthy, József

2014-06-01

The study of neutrinoless double beta decay is the most powerful approach to the fundamental question if the neutrino is a Majorana particle, i.e. its own anti-particle. The observation of the lepton number violating neutrinoless double beta decay would establish the Majorana nature of the neutrino. Until now neutrinoless double beta decay was not observed. The GERmanium Detector Array, GERDA is a double beta decay experiment located at the INFN Gran Sasso National Laboratory, Italy. GERDA operates bare Ge diodes enriched in 76Ge in liquid argon supplemented by a water shield. The exposure accumulated adds up to 21.6 kg· yr with a background level of 1.8 · 10-2 cts/(keV·kg·yr). The results of the Phase I of the experiment are presented and the preparation of the Phase II is briefly discussed.

Parallel nanostructuring of GeSbTe film with particle mask

Energy Technology Data Exchange (ETDEWEB)

Wang, Z.B.; Hong, M.H.; Wang, Q.F.; Chong, T.C. [Data Storage Institute, DSI Building, 5 Engineering Drive 1, 117608, Singapore (Singapore); Department of Electrical and Computer Engineering, National University of Singapore, 119260, Singapore (Singapore); Luk' yanchuk, B.S.; Huang, S.M.; Shi, L.P. [Data Storage Institute, DSI Building, 5 Engineering Drive 1, 117608, Singapore (Singapore)

2004-09-01

Parallel nanostructuring of a GeSbTe film may significantly improve the recording performance in data storage. In this paper, a method that permits direct and massively parallel nanopatterning of the substrate surface by laser irradiation is investigated. Polystyrene spherical particles were deposited on the surface in a monolayer array by self-assembly. The array was then irradiated with a 248-nm KrF laser. A sub-micron nanodent array can be obtained after single-pulse irradiation. These nanodents change their shapes at different laser energies. The optical near-field distribution around the particles was calculated according to the exact solution of the light-scattering problem. The influence of the presence of the substrate on the optical near field was also studied. The mechanisms for the generation of the nanodent structures are discussed. (orig.)

Ge/graded-SiGe multiplication layers for low-voltage and low-noise Ge avalanche photodiodes on Si

Science.gov (United States)

Miyasaka, Yuji; Hiraki, Tatsurou; Okazaki, Kota; Takeda, Kotaro; Tsuchizawa, Tai; Yamada, Koji; Wada, Kazumi; Ishikawa, Yasuhiko

2016-04-01

A new structure is examined for low-voltage and low-noise Ge-based avalanche photodiodes (APDs) on Si, where a Ge/graded-SiGe heterostructure is used as the multiplication layer of a separate-absorption-carrier-multiplication structure. The Ge/SiGe heterojunction multiplication layer is theoretically shown to be useful for preferentially enhancing impact ionization for photogenerated holes injected from the Ge optical-absorption layer via the graded SiGe, reflecting the valence band discontinuity at the Ge/SiGe interface. This property is effective not only for the reduction of operation voltage/electric field strength in Ge-based APDs but also for the reduction of excess noise resulting from the ratio of the ionization coefficients between electrons and holes being far from unity. Such Ge/graded-SiGe heterostructures are successfully fabricated by ultrahigh-vacuum chemical vapor deposition. Preliminary pin diodes having a Ge/graded-SiGe multiplication layer act reasonably as photodetectors, showing a multiplication gain larger than those for diodes without the Ge/SiGe heterojunction.

Analysis of pion production data from E-802 at 14.6 GeV/c using ARC

International Nuclear Information System (INIS)

Kahana, D.; Torun, Yagmur

1995-07-01

We compared the invariant cross sections for pion production by a 14.6 GeV/c proton beam on Be, Al, Cu and Au targets from the measurements of Abbott et.al. with predictions of the ARC program. The agreement was found to be good in the region where data exists. Most pions are found at low momenta in the lab frame. Unfortunately very little data exists for low momentum pions

�Mission and Power� � The relevance of the Edinburgh 2010 discussion in the theological engagement with violence

Directory of Open Access Journals (Sweden)

Cornelius J.P. Niemandt

2011-06-01

Full Text Available The ecumenical conference in Edinburgh in 2010 identified the issue of �Mission and Power� as one of the pressing mission themes for our generation. Christian mission has always been associated with power. The promise of the risen Christ was that his followers would receive power when the Holy Spirit came on them. History, unfortunately, recounts how Christian mission became backed by force and violence, the very opposite of the kind of power and energy associated with the Spirit of God. At the Edinburgh 2010 conference this violence in mission was studied as expressed in churches� relations with indigenous peoples. This article engages violence theologically and ecumenically by inviting the Edinburgh 2010 discussion into the reflection on violence in the democratic South Africa, as it was presented as a contribution to a wider discussion on violence in South Africa. This is done with the following objectives in mind: (1 to better understand the interplay between violence and power against the background of a broader global and ecumenical discussion of this issue; and (2 to suggest clues for the theological reflection on violence that may help to create a powerless, spacecreating discourse that opens up thinking and contributes to healing and justice.The article concludes by building on the Edinburg 2010 foundations of mission as dialogue and proposing prophetic dialogue as a powerless discourse: �Transforming the meaning of mission means that � God�s mission calls all people to work together for healing and justice in partnerships of mutuality and respect.�

Silicon and Ge in the deep sea deduced from Si isotope and Ge measurements in giant glass sponges

Science.gov (United States)

Jochum, K. P.; Schuessler, J. A.; Haug, G. H.; Andreae, M. O.; Froelich, P. N.

2016-12-01

Biogenic silica, such as giant glass spicules of the deep-sea sponge Monorhaphis chuni, is an archive to monitor paleo-Si and -Ge in past seawater. Here we report on Si isotopes and Ge/Si ratios in up to 2.7 m long spicules using LA-(MC)-ICP-MS. Isotope ratios of Si are suitable proxies for Si concentrations in seawater, because Si isotope fractionation into biogenic silica is a function of seawater dissolved Si concentration. The δ30Si values for our specimens range from about - 0.5 ‰ to - 3.6 ‰ and are much lower than modern (>1000 m) seawater δ30Si of about 1.3 ‰. Interestingly, there is a systematic Si isotopic and Ge variation from the rim to the center of the cross sections, which we interpret as seawater paleo-Si and -Ge changes. The lifetime of the giant sponges appears to be between about 6 and 14 ka. These age estimates were obtained by comparing our analytical data with various paleo-markers of the glacial-interglacial termination. Thus, the entire Holocene and the end of the last glacial period are contained in the oldest giant spicules. The derived Si and Ge seawater concentrations are ca. 12 % higher and 20 % lower, respectively, during the late glacial than at present. Possible explanations for changing Si, Ge and Ge/Si during the deglaciation could be changes in riverine, glacial, and/or eolian deliveries of silica to the oceans and changes in marine sedimentary reverse weathering, which removes Ge into marine sediments during opal dissolution and diagenesis.

Search for neutrinoless double beta decay of Ge-76 with the GERmanium Detector Array '' GERDA ''

International Nuclear Information System (INIS)

Brugnera, R.

2009-01-01

The study of neutrinoless double beta decay (DBD) is the most powerful approach to the fundamental question if the neutrino is a Majorana particle, i.e. its own anti-particle. The observation of neutrinoless DBD would not only establish the Majorana nature of the neutrino but also represent a determination of its effective mass if the nuclear matrix element is given. So far, the most sensitive results have been obtained with Ge-76, and the group of Klapdor-Kleingrothaus has made a claim of discovery. Future experiments have to reduce radioactive backgrounds to increase the sensitivity. '' GERDA '' is a new double beta-decay experiment which is currently under construction in the INFN Gran Sasso National Laboratory, Italy. It is implementing a new shielding concept by operating bare Ge diodes - enriched in Ge-76 - in high purity liquid argon supplemented by a water shield. The aim of '' GERDA '' is to verify or refute the recent claim of discovery, and, in a second phase, to achieve a two orders of magnitude lower background index than recent experiments, increasing the sensitive mass and reaching exposure of 100 kg yr. It be will discuss design, physics reach, and status of construction of '' GERDA '', and present results from various R efforts including long term stability of bare Ge diodes in cryogenic liquids, material screening, cryostat performance, detector segmentation, cryogenic precision electronics, safety aspects, and Monte Carlo simulations. (author)

Interfacial sharpness and intermixing in a Ge-SiGe multiple quantum well structure

Science.gov (United States)

Bashir, A.; Gallacher, K.; Millar, R. W.; Paul, D. J.; Ballabio, A.; Frigerio, J.; Isella, G.; Kriegner, D.; Ortolani, M.; Barthel, J.; MacLaren, I.

2018-01-01

A Ge-SiGe multiple quantum well structure created by low energy plasma enhanced chemical vapour deposition, with nominal well thickness of 5.4 nm separated by 3.6 nm SiGe spacers, is analysed quantitatively using scanning transmission electron microscopy. Both high angle annular dark field imaging and electron energy loss spectroscopy show that the interfaces are not completely sharp, suggesting that there is some intermixing of Si and Ge at each interface. Two methods are compared for the quantification of the spectroscopy datasets: a self-consistent approach that calculates binary substitutional trends without requiring experimental or computational k-factors from elsewhere and a standards-based cross sectional calculation. Whilst the cross section approach is shown to be ultimately more reliable, the self-consistent approach provides surprisingly good results. It is found that the Ge quantum wells are actually about 95% Ge and that the spacers, whilst apparently peaking at about 35% Si, contain significant interdiffused Ge at each side. This result is shown to be not just an artefact of electron beam spreading in the sample, but mostly arising from a real chemical interdiffusion resulting from the growth. Similar results are found by use of X-ray diffraction from a similar area of the sample. Putting the results together suggests a real interdiffusion with a standard deviation of about 0.87 nm, or put another way—a true width defined from 10%-90% of the compositional gradient of about 2.9 nm. This suggests an intrinsic limit on how sharp such interfaces can be grown by this method and, whilst 95% Ge quantum wells (QWs) still behave well enough to have good properties, any attempt to grow thinner QWs would require modifications to the growth procedure to reduce this interdiffusion, in order to maintain a composition of ≥95% Ge.

The crystal structure and electronic properties of a new metastable non-stoichiometric BaAl{sub 4}-type compound crystallized from amorphous La{sub 6}Ni{sub 34}Ge{sub 60} alloy

Energy Technology Data Exchange (ETDEWEB)

Hasegawa, Masashi [Institute for Materials Research, Tohoku University, Sendai, Katahira 980-8577 (Japan); Suzuki, Shoichiro [Institute for Materials Research, Tohoku University, Sendai, Katahira 980-8577 (Japan); Ohsuna, Tetsu [Institute for Materials Research, Tohoku University, Sendai, Katahira 980-8577 (Japan); Matsubara, Eiichiro [Institute for Materials Research, Tohoku University, Sendai, Katahira 980-8577 (Japan); Endo, Satoshi [Center for Low Temperature Science, Tohoku University, Sendai, Katahira 980-8577 (Japan); Inoue, Akihisa [Institute for Materials Research, Tohoku University, Sendai, Katahira 980-8577 (Japan)

2004-11-17

A new metastable La-Ge-Ni ternary BaAl{sub 4}-type (ThCr{sub 2}Si{sub 2}-type) compound, of which the space group is I4/mmm is synthesized. It is obtained by a polymorphic transformation from an La{sub 6}Ni{sub 34}Ge{sub 60} amorphous alloy on crystallizing. The formula of the compound is (La{sub 0.3}Ge{sub 0.7})(Ni{sub 0.85}Ge{sub 0.15}){sub 2}Ge{sub 2}. This indicates that it is highly non-stoichiometric compared to the stoichiometric LaNi{sub 2}Ge{sub 2}. It is found that the c-axis lattice parameter of this compound is much longer than that of LaNi{sub 2}Ge{sub 2}. It should be noted that the longer c-axis unit cell parameter is attributable only to the longer interlayer distance between Ge site and Ni site layers. The temperature dependences of electrical resistivity and thermoelectric power of the (La{sub 0.3}Ge{sub 0.7})(Ni{sub 0.85}Ge{sub 0.15}){sub 2}Ge{sub 2} compound and La{sub 6}Ni{sub 34}Ge{sub 60} amorphous alloy are also clarified. The comparison of these electronic properties between the two materials indicates that sp-electrons mainly contribute to the density of states around the Fermi level of this compound.

Search for new negative particles produced in 14. 6 A GeV/C Si+A interactions

Energy Technology Data Exchange (ETDEWEB)

Crawford, H J; Engelage, J; Greiner, L [Space Sciences Lab., Univ. of California, Berkeley (United States); Aoki, M; Hayano, R S; Shimizu, Y [Univ. of Tokyo (Japan); Beatty, J [Boston Univ., MA (United States); Beavis, D; Debbe, R [Brookhaven National Lab., Upton, NY (United States); Carroll, J B [Univ. of California, Los Angeles (United States); Chiba, J; Tanaka, K H [National Lab. for High Energy Physics (KEK), Tsukuba (Japan); Doke, T; Kashiwagi, T; Kikuchi, J [Waseda Univ., Tokyo (Japan); Hallman, T J [Johns Hopkins Univ., Baltimore, MD (United States); Heckman, H; Lindstrom, P J [Lawrence Berkeley Lab., CA (United States); Kirk, P N; Wang, Z F [Louisiana State Univ., Baton Rouge (United States); Nagamiya, S; Stankus, P [Columbia Univ., Nevis Lab., Irvington, NY (United States)

1991-12-01

We discuss an investigation of negative particle production in interactions of 14.6 A GeV/c {sup 28}Si with targets of Al, Cu, and Au at the Brookhaven National Laboratory AGS, experiment E858. The experiment was performed using a beamline spectrometer to measure cross sections for meta-stable negatively charged particles produced at 0deg at rigidities from 2 GV to 8 GV. We report upper limits on the production of new particles in the mass to charge (A/Z) range from -1 to -6 and discuss a simple model for describing our sensitivity. (orig.).

Editorial Revista GeAS v.6 n.3 Setembro /Dezembro 2017

Directory of Open Access Journals (Sweden)

Claudia Terezinha Kniess

2017-12-01

Full Text Available É com satisfação que apresentamos a última edição do ano de 2017 da revista Gestão Ambiental e Sustentabilidade - Revista GeAS. A Revista GeAS consolida-se a cada edição como um importante meio para divulgação e discussão de trabalhos científicos que contribuem com o avanço das pesquisas na área de Gestão Ambiental e Sustentabilidade, agora com a ampliação do seu alcance por meio dos indexadores Emerging Sources Citation Index da Web of Science (ESCI e Sistema de Información Científica Redalyc - Red de Revistas Científicas de América Latina y el Caribe, España y Portugal. A revista GeAS é classificada como Qualis B2 na área de avaliação da CAPES de Administração e Qualis B3 na área de Planejamento Urbano Regional - Demografia. No ano de 2017 alcançou um número expressivo de submissões, contanto com 270 artigos recebidos. A presente edição da Revista GeAS contempla um conjunto de dez artigos selecionados por meio da avaliação por pares em sistema blind review, que abrangem temáticas de interesse no contexto acadêmico e empresarial, como também da comunidade de modo geral. Os artigos publicados nesta edição discutem temas relacionados a: sustentabilidade e gestão da imagem; ordenamento territorial; logística reversa; responsabilidade social corporativa; gestão do capital intelectual; governança de TI verde; tratamento de águas residuárias; recursos minerais; gestão da coleta seletiva de resíduos sólidos entre outros.

Experimental study of line reversal symmetry in the reactions anti pp→π-π+ and π+p→pπ+ at 6 GeV/c

International Nuclear Information System (INIS)

Stein, N.A.

1977-01-01

The differential cross sections were measured for several two body and quasi-two body baryon exchange scattering channels at 6 GeV/c in a spark chamber-counter experiment utilizing the Brookhaven National Laboratory Multi-Particle Spectrometer. Among these is a comparison study of anti pp→π - π + and its line reversed partner π + p→pπ + in the range t/sub min/ > t > -1.5 (GeV/c) 2 . For the first time structure analogous to the striking dip in the backward elastic scattering reaction at t approx. -0.15 (GeV/c) 2 is observed in the annihilation reaction. The structure which appears as a break in the t slope at t approx. -0.40 (GeV/c) 2 and perhaps a shallow dip at that point, demonstrates the strong role played by absorption in these channels

The Edinburgh Postnatal Depression Scale (EPDS): translation and validation study of the Iranian version

OpenAIRE

Torkan Behnaz; Montazeri Ali; Omidvari Sepideh

2007-01-01

Abstract Background The Edinburgh Postnatal Depression Scale (EPDS) is a widely used instrument to measure postnatal depression. This study aimed to translate and to test the reliability and validity of the EPDS in Iran. Methods The English language version of the EPDS was translated into Persian (Iranian language) and was used in this study. The questionnaire was administered to a consecutive sample of 100 women with normal (n = 50) and caesarean section (n = 50) deliveries at two points in ...

Rejecting escape events in large volume Ge detectors by a pulse shape selection procedure

International Nuclear Information System (INIS)

Del Zoppo, A.; Agodi, C.; Alba, R.; Bellia, G.; Coniglione, R.; Loukachine, K.; Maiolino, C.; Migneco, E.; Piattelli, P.; Santonocito, D.; Sapienza, P.

1993-01-01

The dependence of the response to γ-rays of a large volume Ge detector on the interval width of a selected initial rise pulse slope is investigated. The number of escape events associated with a small pulse slope is found to be greater than the corresponding number of full energy events. An escape event rejection procedure based on the observed correlation between energy deposition and pulse shape is discussed. Such a procedure seems particularly suited for the design of highly granular large volume Ge detector arrays. (orig.)

Coordination Chemistry of [E(Idipp)]2+ Ligands (E = Ge, Sn): Metal Germylidyne [Cp*(CO)2W≡Ge(Idipp)]+ and Metallotetrylene [Cp*(CO)3W–E(Idipp)]+ Cations

KAUST Repository

Lebedev, Yury

2017-04-12

The synthesis and full characterization of the NHC-stabilized tungstenochlorostannylene [Cp*(CO)3W–SnCl(Idipp)] (1Sn), the NHC-stabilized chlorogermylidyne complex [Cp*(CO)2W═GeCl(Idipp)] (2), the tungsten germylidyne complex salt [Cp*(CO)2W≡Ge(Idipp)][B(C6H3-3,5-(CF3)2)4] (3), and the cationic metallostannylene [Cp*(CO)3W–Sn(Idipp)][Al(OC(CF3)3)4] (4Sn) are reported (Idipp = 2,3-dihydro-1,3-bis(2,6-diisopropylphenyl)-1H-imidazol-2-ylidene, Cp* = η5-C5Me5). Metathetical exchange of SnCl2(Idipp) with Li[Cp*W(CO)3] afforded selectively 1Sn. Photolytic decarbonylation of the Ge analogue [Cp*(CO)3W–GeCl(Idipp)] (1Ge) afforded the NHC-stabilized chlorogermylidyne complex (2), featuring a trigonal-planar coordinated germanium center and a W–Ge double bond (W–Ge 2.3496(5) Å). Chloride abstraction from 2 with Na[B(C6H3-3,5-(CF3)2)4] yielded the germylidyne complex salt 3, which contains an almost linear W–Ge–C1 linkage (angle at Ge = 168.7(1)°) and a W–Ge triple bond (2.2813(4) Å). Chloride elimination from 1Ge afforded the tungstenogermylene salt [Cp*(CO)3W–Ge(Idipp)][B(C6H3-3,5-(CF3)2)4] (4Ge), which in contrast to 1Ge could not be decarbonylated to form 3 despite the less strongly bound carbonyl ligands. The tin compounds 1Sn and 4Sn did not afford products bearing multiple W–Sn bonds. Treatment of 4Ge with Me2NC≡CNMe2 yielded unexpectedly the neutral germyl complex 5 containing a pendant 1-germabicyclo-[3,2,0]-hepta-2,5-diene ligand instead of the anticipated [2 + 1]-cycloaddition product at the Ge-center.

High-spin research with HERA [High Energy-Resolution Array

International Nuclear Information System (INIS)

Diamond, R.M.

1987-06-01

The topic of this report is high spin research with the High Energy Resolution Array (HERA) at Lawrence Berkeley Laboratory. This is a 21 Ge detector system, the first with bismuth germanate (BGO) Compton suppression. The array is described briefly and some of the results obtained during the past year using this detector facility are discussed. Two types of studies are described: observation of superdeformation in the light Nd isotopes, and rotational damping at high spin and excitation energy in the continuum gamma ray spectrum

Recent upgrades and performance of the CACTUS detector array

International Nuclear Information System (INIS)

Schiller, A.; Bergholt, L.; Guttormsen, M.

1998-03-01

The SCANDITRONIX MC-35 cyclotron laboratory, including the Oslo Cyclotron, has been in operation since 1980. The main auxiliary equipment consists of the multi-detector system CACTUS. During the last years, new, high efficiency Ge(HP) detectors were purchased and integrated in the CACTUS detector array. In this connection, the electronical setup was revised and altered. Several drawbacks of the old setup could be pointed out and eliminated. A test of the performance of all detector array elements was made with high accuracy. 27 refs

GeV Detection of HESS J0632+057

Energy Technology Data Exchange (ETDEWEB)

Li, Jian; Torres, Diego F.; Wilhelmi, Emma de Oña [Institute of Space Sciences (CSIC–IEEC), Campus UAB, Carrer de Magrans s/n, E-08193 Barcelona (Spain); Cheng, K.-S. [Department of Physics, University of Hong Kong, Pokfulam Road, Hong Kong (China); Kretschmar, Peter [European Space Astronomy Centre (ESA/ESAC), Science Operations Department, Villanueva de la Cañada (Madrid) (Spain); Hou, Xian [Yunnan Observatories, Chinese Academy of Sciences, 396 Yangfangwang, Guandu District, Kunming 650216 (China); Takata, Jumpei, E-mail: jian@ice.csic.es [School of Physics, Huazhong University of Science and Technology, Wuhan 430074 (China)

2017-09-10

HESS J0632+057 is the only gamma-ray binary that has been detected at TeV energies, but not at GeV energies yet. Based on nearly nine years of Fermi Large Area Telescope (LAT) Pass 8 data, we report here on a deep search for the gamma-ray emission from HESS J0632+057 in the 0.1–300 GeV energy range. We find a previously unknown gamma-ray source, Fermi J0632.6+0548, spatially coincident with HESS J0632+057. The measured flux of Fermi J0632.6+0548 is consistent with the previous flux upper limit on HESS J0632+057 and shows variability that can be related to the HESS J0632+057 orbital phase. We propose that Fermi J0632.6+0548 is the GeV counterpart of HESS J0632+057. Considering the Very High Energy spectrum of HESS J0632+057, a possible spectral turnover above 10 GeV may exist in Fermi J0632.6+0548, as appears to be common in other established gamma-ray binaries.

Measurement of the Parity-Violating Asymmetry in Deep Inelastic Scattering at JLab 6 GeV

Energy Technology Data Exchange (ETDEWEB)

Wang, Diancheng [Univ. of Virginia, Charlottesville, VA (United States)

2013-12-01

The parity-violating asymmetry in deep inelastic scattering (PVDIS) offers us a useful tool to study the weak neutral couplings and the hadronic structure of the nucleon, and provides high precision tests on the Standard Model. During the 6 GeV PVDIS experiment at the Thomas Jefferson National Accelerator Facility, the parity-violating asymmetries A{sub PV} of a polarized electron beam scattering off an unpolarized deuteron target in the deep inelastic scattering region were precisely measured at two Q² values of 1.1 and 1.9 (GeV/c)². The asymmetry at Q²=1.9 (GeV/c)² can be used to extract the weak coupling combination 2C_2u - C_2d, assuming the higher twist effect is small. The extracted result from this measurement is in good agreement with the Standard Model prediction, and improves the precision by a factor of five over previous data. In addition, combining the asymmetries at both Q² values provides us extra knowledge on the higher twist effects. The parity violation asymmetries in the resonance region were also measured during this experiment. These results are the first A_PV data in the resonance region beyond the Δ (1232). They provide evidence that the quark hadron duality works for A_PV at the (10-15)% level, and set constraints on nucleon resonance models that are commonly used for background calculations to other parity-violating electron scattering measurements.

Recovery Act - Measurement of Parity Violation in Deep Inelastic Scattering and Studies of the Nucleon Spin Structure at JLab 6 and 11 GeV

Energy Technology Data Exchange (ETDEWEB)

Zheng, Xiaochao [Univ. of Virginia, Charlottesville, VA (United States). Jesse Beams Lab.

2016-03-10

The program proposed contains two ingredients which aim to address aspects of two of the three research frontiers of nuclear science as identified in the 2007 NSAC Long Range Plan. The first topic, a test of the current Standard Model, is an ongoing project focusing on measurements of the parity-violating asymmetry in ~e-2H deep inelastic scattering (PVDIS). The PVDIS measurement is complementary to other completed or ongoing low- to medium-energy tests of the Standard Model. As the first, exploratory, step, an experiment using a 6 GeV electron beam will be carried out from October to December 2009 at the Thomas Jefferson National Accelerator Facility (JLab). Meanwhile, a program using the upgraded JLab 11 GeV beam is being planned. The PVDIS program as a whole will provide the first precision data on the axial quark neutral-weak coupling constants. This will either put the current Standard Model to a test that has never been done before, or reveal information on where to look for New Physics beyond the current Standard Model. The PVDIS program will also provide results on hadronic physics effects such as charge symmetry violation. The second part of the proposed program uses spin observables to address the research frontier concerning QCD and structure of the nucleon. An experiment using the JLab 6 GeV beam in 2001 showed that, contrary to predictions from perturbative quantum chromodynamics (pQCD), while the valence up quark’s spin is parallel to the nucleon’s spin, the valence down quark’s spin is not. In order to test the limit of QCD in describing the nucleon spin structure to a region beyond the 6 GeV kinematics, this measurement will be extended to a more energetic, “deeper” valence quark region using the upgraded JLab 11 GeV beam with a polarized ³He target. Although the two topics of the proposed program appear to focus on different physics, for the upgraded JLab 11 GeV beam, both will utilize a new, yet-to-be-built large acceptance

Electronic, bonding, linear and non-linear optical properties of novel Li{sub 2}Ga{sub 2}GeS{sub 6} compound

Energy Technology Data Exchange (ETDEWEB)

Khan, Wilayat, E-mail: wkhan@ntc.zcu.cz [New Technologies – Research Center, University of West Bohemia, Univerzitni 8, Pilsen 306 14 (Czech Republic); Murtaza, G., E-mail: murtaza@icp.edu.pk [Department of Physics, Islamia College Peshawar, KPK (Pakistan); Ouahrani, T. [Laboratoire de Physique Théorique, B.P. 230, Université de Tlemcen, Tlemcen 13000 (Algeria); École Préparatoire en Sciences et Techniques, BP 165 R.P., 13000 Tlemcen (Algeria); Mahmood, Asif [College of Engineering, Chemical Engineering Department, King Saud University Riyadh (Saudi Arabia); Khenata, R.; El Amine Monir, Mohammed; Baltache, H. [Laboratoire de Physique Quantique, de la Matière et de la Modélisation Mathématique (LPQ3M), Université de Mascara, Mascara 29000 (Algeria)

2016-07-25

Recently a new sulphide compound Li{sub 2}Ga{sub 2}GeS{sub 6} was synthesized. It has attracted great attention due to its nonlinear optical properties. Quite surprisingly no theoretical study yet been reported on the physical properties of this important material. We have paid attention to study the electronic and optical properties of Li{sub 2}Ga{sub 2}GeS{sub 6} using first principles techniques of density functional theory. Different exchange-correlation techniques have been applied to study these properties. From local density and generalized gradient approximations the compound is predicted to be direct bandgap. However the band gap is indirect when calculated through the Engle–Vosko and modified Becke–Johnson potentials. Therefore the bandgap of the compound is pseudo direct (direct and indirect band gaps are very close). In optical properties dielectric function, refractive index, reflectivity and absorption coefficient were studied. Furthermore, the second harmonic generation properties of the compound are predicted. - Highlights: • Li{sub 2}Ga{sub 2}GeS{sub 6} studied for the first time using first principles calculations. • Different exchange correlation potentials have been adopted for the calculations. • Bandgap of the compound is pseudo direct. • Optical structures are prominent in the low frequency ultraviolet region. • The lone pair basins seem to have a non-negligible role in the optical properties.

Thermal Expansion and Luminescent Properties of Triorthogermanates CaLa2- x Eu x Ge3O10 ( x = 0.0-0.6)

Science.gov (United States)

Lipina, O. A.; Surat, L. L.; Baklanova, Ya. V.; Berger, I. F.; Tyutyunnik, A. P.; Zubkov, V. G.

2018-02-01

Solid solutions CaLa2- x Eu x Ge3O10 ( x = 0.0-0.6, Δ x = 0.1) have been synthesized for the first time. The compounds are isostructural to CaLa2Ge3O10, they crystallize in the monoclinic system, space group P21/ c, Z = 4. The low-temperature X-ray diffraction studies have revealed the strain anisotropy of germanate CaLa2Ge3O10 crystal lattice in the temperature range 80-298 K, and the linear thermal expansion coefficients have been calculated. The optical properties of the activated phases have been studied, and the influence of the dopant concentration and the excitation wavelength on the luminescence characteristics of the synthesized compounds has been established.

Brain donation procedures in the Sudden Death Brain Bank in Edinburgh.

Science.gov (United States)

Smith, Colin; Millar, Tracey

2018-01-01

Brain banks typically receive donations through premortem consent procedures, often through disease-specific patient cohorts, such as dementia. While some control cases can be obtained through this route, access to age-matched control tissues, and some chronic neurologic conditions, particularly psychiatric disorders, can be challenging. The Edinburgh Sudden Death Brain Bank was established to try and increase access to control cases across all ages, and also access to psychiatric disorders through suicides. This chapter outlines the processes for establishing donations through medicolegal postmortems, which, although often with a prolonged postmortem interval, can provide high-quality well-characterized postmortem brain tissue to the neuroscience research community. Copyright © 2018 Elsevier B.V. All rights reserved.

The potential of a Cerenkov Array for Supersymmetry and Cosmology

International Nuclear Information System (INIS)

Vasileiadis, G.; Falvard, A.; Giraud, E.; Lavalle, J.; Sajjad, S.

2005-01-01

If R-parity is sufficiently well conserved, most of the supersymmetric models predict the existence of a stable, neutral particle, the neutralino, which would be a natural candidate for dark matter. Such particles can annihilate through various channels producing in particular, a faint flux of high energy photons in galactic and extragalactic high density regions. We have considered the potential of a Cerenkov array for exploring a significant fraction of the supersymmetric parameter space. The main constraints are the flux limit, which requires a very large effective area, and the energy threshold which needs reaching lower limit of the order of 15-20 GeV due to the lowest neutralino mass given by accelerators. Combining such constraints leads to an array of at least 16-19 Cerenkov reflectors with diameters of the order of 18m, located at high altitude (5000 m). This instrument would combine wide angle camera and large detection areas. It would also serve as a major tool in Observational Cosmology and Astrophysics above 15-20 GeV up to 1 TeV. Coming after GLAST, it would allow studying in details, at higher energy, the sources detected by this satellite. This instrument would not be able to explore the 10 GeV to sub-10 GeV domain unless higher QE detectors are discovered or larger diameters are considered. A very interesting site would be the Chajnantor-Toco area for this project which requires clear UBV photometric nights

Analysis of threshold current of uniaxially tensile stressed bulk Ge and Ge/SiGe quantum well lasers.

Science.gov (United States)

Jiang, Jialin; Sun, Junqiang; Gao, Jianfeng; Zhang, Ruiwen

2017-10-30

We propose and design uniaxially tensile stressed bulk Ge and Ge/SiGe quantum well lasers with the stress along direction. The micro-bridge structure is adapted for introducing uniaxial stress in Ge/SiGe quantum well. To enhance the fabrication tolerance, full-etched circular gratings with high reflectivity bandwidths of ~500 nm are deployed in laser cavities. We compare and analyze the density of state, the number of states between Γ- and L-points, the carrier injection efficiency, and the threshold current density for the uniaxially tensile stressed bulk Ge and Ge/SiGe quantum well lasers. Simulation results show that the threshold current density of the Ge/SiGe quantum well laser is much higher than that of the bulk Ge laser, even combined with high uniaxial tensile stress owing to the larger number of states between Γ- and L- points and extremely low carrier injection efficiency. Electrical transport simulation reveals that the reduced effective mass of the hole and the small conduction band offset cause the low carrier injection efficiency of the Ge/SiGe quantum well laser. Our theoretical results imply that unlike III-V material, uniaxially tensile stressed bulk Ge outperforms a Ge/SiGe quantum well with the same strain level and is a promising approach for Si-compatible light sources.

The Ag2Se-HgSe-GeSe2 system and crystal structures of the compounds

International Nuclear Information System (INIS)

Parasyuk, O.V.; Gulay, L.D.; Romanyuk, Ya.E.; Olekseyuk, I.D.; Piskach, L.V.

2003-01-01

The phase diagram of the quasi-ternary Ag 2 Se-HgSe-GeSe 2 system at 298 K was investigated using X-ray phase analysis and metallography. The formation of five intermediate quaternary phases β (Ag ∼7.12-∼6.32 Hg ∼0.44-∼0.82 GeSe 6 ), γ (Ag ∼6.08-∼4.00 Hg ∼0.96-∼2.00 GeSe 6 ), δ (Ag 3.4 Hg 2.3 GeSe 6 ), ε (Ag ∼2.24-∼2.00 Hg ∼2.88-∼3.00 GeSe 6 ) and ∼Ag 1.4 Hg 1.3 GeSe 6 was established. The crystal structure of the β-phase (for the Ag 6.504 Hg 0.912 GeSe 6 composition) was determined using X-ray single crystal diffraction. It crystallizes in a cubic structure (space group F4-bar 3m) with the lattice parameter a=1.09026(4) nm. The crystal structure of the δ-phase (Ag 3.4 Hg 2.3 GeSe 6 ) was determined using X-ray powder diffraction (space group F4-bar 3m, a=1.07767(8) nm). The crystal structure determination of the γ-phase (space group Pmn2 1 ) was performed for the compositions Ag 5.6 Hg 1.2 GeSe 6 , Ag 4.8 Hg 1.6 GeSe 6 and Ag 4 Hg 2 GeSe 6 using X-ray powder diffraction. The crystal structure of the LT-Hg 2 GeSe 4 compound (space group I4-bar , a=0.56786(2), c=1.12579(5) nm) was confirmed by powder diffraction also.

Measurements of Multiparticle Correlations in d +Au Collisions at 200, 62.4, 39, and 19.6 GeV and p +Au Collisions at 200 GeV and Implications for Collective Behavior

Science.gov (United States)

Aidala, C.; Akiba, Y.; Alfred, M.; Andrieux, V.; Aoki, K.; Apadula, N.; Asano, H.; Ayuso, C.; Azmoun, B.; Babintsev, V.; Bagoly, A.; Bandara, N. S.; Barish, K. N.; Bathe, S.; Bazilevsky, A.; Beaumier, M.; Belmont, R.; Berdnikov, A.; Berdnikov, Y.; Blau, D. S.; Boer, M.; Bok, J. S.; Brooks, M. L.; Bryslawskyj, J.; Bumazhnov, V.; Butler, C.; Campbell, S.; Canoa Roman, V.; Cervantes, R.; Chi, C. Y.; Chiu, M.; Choi, I. J.; Choi, J. B.; Citron, Z.; Connors, M.; Cronin, N.; Csanád, M.; Csörgő, T.; Danley, T. W.; Daugherity, M. S.; David, G.; Deblasio, K.; Dehmelt, K.; Denisov, A.; Deshpande, A.; Desmond, E. J.; Dion, A.; Dixit, D.; Do, J. H.; Drees, A.; Drees, K. A.; Dumancic, M.; Durham, J. M.; Durum, A.; Elder, T.; Enokizono, A.; En'yo, H.; Esumi, S.; Fadem, B.; Fan, W.; Feege, N.; Fields, D. E.; Finger, M.; Finger, M.; Fokin, S. L.; Frantz, J. E.; Franz, A.; Frawley, A. D.; Fukuda, Y.; Gal, C.; Gallus, P.; Garg, P.; Ge, H.; Giordano, F.; Goto, Y.; Grau, N.; Greene, S. V.; Grosse Perdekamp, M.; Gunji, T.; Guragain, H.; Hachiya, T.; Haggerty, J. S.; Hahn, K. I.; Hamagaki, H.; Hamilton, H. F.; Han, S. Y.; Hanks, J.; Hasegawa, S.; Haseler, T. O. S.; He, X.; Hemmick, T. K.; Hill, J. C.; Hill, K.; Hodges, A.; Hollis, R. S.; Homma, K.; Hong, B.; Hoshino, T.; Hotvedt, N.; Huang, J.; Huang, S.; Imai, K.; Imrek, J.; Inaba, M.; Iordanova, A.; Isenhower, D.; Ito, Y.; Ivanishchev, D.; Jacak, B. V.; Jezghani, M.; Ji, Z.; Jiang, X.; Johnson, B. M.; Jorjadze, V.; Jouan, D.; Jumper, D. S.; Kang, J. H.; Kapukchyan, D.; Karthas, S.; Kawall, D.; Kazantsev, A. V.; Khachatryan, V.; Khanzadeev, A.; Kim, C.; Kim, D. J.; Kim, E.-J.; Kim, M.; Kim, M. H.; Kincses, D.; Kistenev, E.; Klatsky, J.; Kline, P.; Koblesky, T.; Kotov, D.; Kudo, S.; Kurita, K.; Kwon, Y.; Lajoie, J. G.; Lallow, E. O.; Lebedev, A.; Lee, S.; Lee, S. H.; Leitch, M. J.; Leung, Y. H.; Lewis, N. A.; Li, X.; Lim, S. H.; Liu, L. D.; Liu, M. X.; Loggins, V.-R.; Lökös, S.; Lovasz, K.; Lynch, D.; Majoros, T.; Makdisi, Y. I.; Makek, M.; Malaev, M.; Manko, V. I.; Mannel, E.; Masuda, H.; McCumber, M.; McGaughey, P. L.; McGlinchey, D.; McKinney, C.; Mendoza, M.; Metzger, W. J.; Mignerey, A. C.; Mihalik, D. E.; Milov, A.; Mishra, D. K.; Mitchell, J. T.; Mitsuka, G.; Miyasaka, S.; Mizuno, S.; Montuenga, P.; Moon, T.; Morrison, D. P.; Morrow, S. I. M.; Murakami, T.; Murata, J.; Nagai, K.; Nagashima, K.; Nagashima, T.; Nagle, J. L.; Nagy, M. I.; Nakagawa, I.; Nakagomi, H.; Nakano, K.; Nattrass, C.; Niida, T.; Nouicer, R.; Novák, T.; Novitzky, N.; Novotny, R.; Nyanin, A. S.; O'Brien, E.; Ogilvie, C. A.; Orjuela Koop, J. D.; Osborn, J. D.; Oskarsson, A.; Ottino, G. J.; Ozawa, K.; Pantuev, V.; Papavassiliou, V.; Park, J. S.; Park, S.; Pate, S. F.; Patel, M.; Peng, W.; Perepelitsa, D. V.; Perera, G. D. N.; Peressounko, D. Yu.; Perezlara, C. E.; Perry, J.; Petti, R.; Phipps, M.; Pinkenburg, C.; Pisani, R. P.; Pun, A.; Purschke, M. L.; Radzevich, P. V.; Read, K. F.; Reynolds, D.; Riabov, V.; Riabov, Y.; Richford, D.; Rinn, T.; Rolnick, S. D.; Rosati, M.; Rowan, Z.; Runchey, J.; Safonov, A. S.; Sakaguchi, T.; Sako, H.; Samsonov, V.; Sarsour, M.; Sato, K.; Sato, S.; Schaefer, B.; Schmoll, B. K.; Sedgwick, K.; Seidl, R.; Sen, A.; Seto, R.; Sexton, A.; Sharma, D.; Shein, I.; Shibata, T.-A.; Shigaki, K.; Shimomura, M.; Shioya, T.; Shukla, P.; Sickles, A.; Silva, C. L.; Silvermyr, D.; Singh, B. K.; Singh, C. P.; Singh, V.; Skoby, M. J.; Slunečka, M.; Smith, K. L.; Snowball, M.; Soltz, R. A.; Sondheim, W. E.; Sorensen, S. P.; Sourikova, I. V.; Stankus, P. W.; Stoll, S. P.; Sugitate, T.; Sukhanov, A.; Sumita, T.; Sun, J.; Syed, S.; Sziklai, J.; Takeda, A.; Tanida, K.; Tannenbaum, M. J.; Tarafdar, S.; Taranenko, A.; Tarnai, G.; Tieulent, R.; Timilsina, A.; Todoroki, T.; Tomášek, M.; Towell, C. L.; Towell, R. S.; Tserruya, I.; Ueda, Y.; Ujvari, B.; van Hecke, H. W.; Vazquez-Carson, S.; Velkovska, J.; Virius, M.; Vrba, V.; Vukman, N.; Wang, X. R.; Wang, Z.; Watanabe, Y.; Watanabe, Y. S.; Wong, C. P.; Woody, C. L.; Xu, C.; Xu, Q.; Xue, L.; Yalcin, S.; Yamaguchi, Y. L.; Yamamoto, H.; Yanovich, A.; Yin, P.; Yoo, J. H.; Yoon, I.; Yu, H.; Yushmanov, I. E.; Zajc, W. A.; Zelenski, A.; Zharko, S.; Zou, L.; Phenix Collaboration

2018-02-01

Recently, multiparticle-correlation measurements of relativistic p /d /He 3 +Au , p +Pb , and even p +p collisions show surprising collective signatures. Here, we present beam-energy-scan measurements of two-, four-, and six-particle angular correlations in d +Au collisions at √{sN N}=200 , 62.4, 39, and 19.6 GeV. We also present measurements of two- and four-particle angular correlations in p +Au collisions at √{sN N}=200 GeV . We find the four-particle cumulant to be real valued for d +Au collisions at all four energies. We also find that the four-particle cumulant in p +Au has the opposite sign as that in d +Au . Further, we find that the six-particle cumulant agrees with the four-particle cumulant in d +Au collisions at 200 GeV, indicating that nonflow effects are subdominant. These observations provide strong evidence that the correlations originate from the initial geometric configuration, which is then translated into the momentum distribution for all particles, commonly referred to as collectivity.

23rd Recent Advances in Retailing & Services Science Conference, July 11-14, 2016, Edinburgh, Scotland : book of abstracts

NARCIS (Netherlands)

Rasouli, S.; Timmermans, H.J.P.

2016-01-01

This book includes the (edited) abstracts of the papers that will be presented at the 23rd Recent Advances in Retailing and Services Science Conference, at the Carlton/Hilton hotel, Edinburgh, Scotland, July 11- 16, 2016. The aim of the conference is to bring together an international and

Sample Scripts for Generating PaGE-OM XML [

Lifescience Database Archive (English)

Full Text Available Sample Scripts for Generating PaGE-OM XML This page is offering some sample scripts...on MySQL. Outline chart of procedure 6. Creating RDB tables for Generating PaGE-OM XML These scripts help yo...wnload: create_tables_sql2.zip 7. Generating PaGE-OM XML from phenotype data This sample Perl script helps y

Possible production of glueballs in anti p 4He reactions at 0.6 GeVc-1 incident momentum

International Nuclear Information System (INIS)

Balestra, F.; Bossolasco, S.; Bussa, M.P.; Busso, L.; Fava, L.; Ferrero, L.; Grasso, A.; Maggiora, A.; Panzieri, D.; Piragino, G.; Piragino, R.; Tosello, F.; Bendiscioli, G.; Filippini, V.; Rotondi, A.; Salvini, P.; Zenoni, A.; Batusov, Yu.; Bunyatov, S.A.; Falomkin, I.V.; Nichitiu, F.; Pontecorvo, G.B.; Rozhdestvensky, A.M.; Sapozhnikov, M.G.; Tretyak, V.I.; Guaraldo, C.; Lodi Rizzini, E.; Haatuft, A.; Halsteinslid, A.; Myklebost, K.; Olsen, J.M.; Breivik, F.O.; Danielsen, K.M.; Jacobsen, T.; Soerensen, S.O.

1991-01-01

A sharp peak at 1150 MeV c -2 in the π - π + π - π + -system in the final state of anti p 4 He-reactions at 0.6 GeV c -1 incident momentum is seen. This system probably has spin-parity = 0 + or 2 + , which are possible spin-parity assignments of a glueball. (orig.)

The 76Ge Program to Search for Neutrinoless Double-Beta Decay

Science.gov (United States)

Guiseppe, Vincente

2017-09-01

Neutrinoless double-beta decay searches play a major role in determining the nature of neutrinos, the existence of a lepton violating process, and the effective Majorana neutrino mass. The Majorana and Gerda Collaborations are operating arrays of high purity Ge detectors to search for neutrinoless double-beta decay in 76Ge. The Majorana Demonstrator is operating at the Sanford Underground Research Facility in South Dakota while the Gerda experiment is operating at LNGS in Italy. The Gerda and Majorana Demonstrator experiments have achieved the lowest backgrounds in the neutrinoless double-beta decay region of interest. These results, coupled with the superior energy resolution (0.1%) of Ge detectors demonstrate that 76Ge is an ideal isotope for a large next generation experiment. The LEGEND collaboration, with 220 members from 47 institutions around the world, has been formed to pursue a ton scale 76Ge experiment. Building on the successes of Gerda and Majorana, the LEGEND collaboration aims to develop a phased neutrinoless double-beta decay experimental program with discovery potential at a half-life significantly longer than 1027 years. This talk will present the initial results from the Majorana Demonstrator and Gerda experiments and the plan for the LEGEND program.

A self-ordered, body-centered tetragonal superlattice of SiGe nanodot growth by reduced pressure CVD

Science.gov (United States)

Yamamoto, Yuji; Zaumseil, Peter; Capellini, Giovanni; Schubert, Markus Andreas; Hesse, Anne; Albani, Marco; Bergamaschini, Roberto; Montalenti, Francesco; Schroeder, Thomas; Tillack, Bernd

2017-12-01

Self-ordered three-dimensional body-centered tetragonal (BCT) SiGe nanodot structures are fabricated by depositing SiGe/Si superlattice layer stacks using reduced pressure chemical vapor deposition. For high enough Ge content in the island (>30%) and deposition temperature of the Si spacer layers (T > 700 °C), we observe the formation of an ordered array with islands arranged in staggered position in adjacent layers. The in plane periodicity of the islands can be selected by a suitable choice of the annealing temperature before the Si spacer layer growth and of the SiGe dot volume, while only a weak influence of the Ge concentration is observed. Phase-field simulations are used to clarify the driving force determining the observed BCT ordering, shedding light on the competition between heteroepitaxial strain and surface-energy minimization in the presence of a non-negligible surface roughness.

High luminosity operation of large solid angle scintillator arrays in Jefferson Lab Hall A

International Nuclear Information System (INIS)

Ran Shneor

2003-01-01

This thesis describes selected aspects of high luminosity operation of large solid angle scintillator arrays in Hall A of the CEBAF (Central Electron Beam Accelerator Facility) at TJNAF (Thomas Jefferson National Accelerator Facility ). CEBAF is a high current, high duty factor electron accelerator with a maximum beam energy of about 6 GeV and a maximum current of 200 (micro)A. Operating large solid angle scintillator arrays in high luminosity environment presents several problems such as high singles rates, low signal to noise ratios and shielding requirements. To demonstrate the need for large solid angle and momentum acceptance detectors as a third arm in Hall A, we will give a brief overview of the physics motivating five approved experiments, which utilize scintillator arrays. We will then focus on the design and assembly of these scintillator arrays, with special focus on the two new detector packages built for the Short Range Correlation experiment E01-015. This thesis also contains the description and results of different tests and calibrations which where conducted for these arrays. We also present the description of a number of tests which were done in order to estimate the singles rates, data reconstruction, filtering techniques and shielding required for these counters

Electron Transport Properties of Ge nanowires

Science.gov (United States)

Hanrath, Tobias; Khondaker, Saiful I.; Yao, Zhen; Korgel, Brian A.

2003-03-01

Electron Transport Properties of Ge nanowires Tobias Hanrath*, Saiful I. Khondaker, Zhen Yao, Brian A. Korgel* *Dept. of Chemical Engineering, Dept. of Physics, Texas Materials Institute, and Center for Nano- and Molecular Science and Technology University of Texas at Austin, Austin, Texas 78712-1062 e-mail: korgel@mail.che.utexas.edu Germanium (Ge) nanowires with diameters ranging from 6 to 50 nm and several micrometer in length were grown via a supercritical fluid-liquid-solid synthesis. Parallel electron energy loss spectroscopy (PEELS) was employed to study the band structure and electron density in the Ge nanowires. The observed increase in plasmon peak energy and peak width with decreasing nanowire diameter is attributed to quantum confinement effects. For electrical characterization, Ge nanowires were deposited onto a patterned Si/SiO2 substrate. E-beam lithography was then used to form electrode contacts to individual nanowires. The influence of nanowire diameter, surface chemistry and crystallographic defects on electron transport properties were investigated and the comparison of Ge nanowire conductivity with respect to bulk, intrinsic Ge will be presented.

Study of intermittency of target fragments in the interactions of 28Si-Em collisions at 14.6 A GeV

International Nuclear Information System (INIS)

Ayaz Ahmad, M.; Ashraf T, M.; Ahmad, Shafiq

2008-01-01

An attempt has been made to investigate the intermittent behaviour and fractal properties of emission spectra of fast and slow target associated particles from 28 Si-emulsion interactions at 14.6 A GeV using nuclear emulsion in cosθ phase space

Fragmentation and Multifragmentation of 10.6 A GeV Gold Nuclei

CERN Document Server

Adamovich, M I

1999-01-01

We present the results of a study performed on the interactions of 10.6A GeV gold nuclei in nuclear emulsions. In a minimum bias sample of 1311 interac- tions, 5260 helium nuclei and 2622 heavy fragments were observed as Au projec- tile fragments. The experimental data are analyzed with particular emphasis of target separation interactions in emulsions and study of criticalexponents. Multiplicity distributions of the fast-moving projectile fragments are inves- tigated. Charged fragment moments, conditional moments as well as two and three -body asymmetries of the fast moving projectile particles are determined in terms of the total charge remaining bound in the multiply charged projectile fragments. Some differences in the average yields of helium nuclei and heavier fragments are observed, which may be attributed to a target effect. However, two and three-body asymmetries and conditional moments indicate that the breakup mechanism of the projectile seems to be independent of target mass. We looked for evidenc...

Vacuum system for the Argonne 6 GeV synchrotron light source

International Nuclear Information System (INIS)

Wehrle, R.; Moenich, J.

1985-01-01

The ANL vacuum system for the 6 GeV light source storage ring features non-evaporable strip getter pumps for uniform pumping around the ring within a gas desorption antechamber, and it also features lumped getter pumping directly under and above crotch radiation absorbers that are positioned after each bending magnet. Based on experiments at ANL in 1980 and by others, the technical and economical advantages have been established for the use of the distributed NeG pumps of non-magnetic strips coated with a non-evaporable Zr Al getter matrix. The NeG strip pump lifetime approaches ten years. The antechamber improves the isolation of the gas desorption process from the main beam chamber and beam. The combination of these vacuum techniques; the NeG strip getter pumps, the gas desorption antechambers, and the lumped ion and lumped getter pumping provide a unique and reliable system for maintaining long beam lifetime

Activation and thermal stability of ultra-shallow B+-implants in Ge

International Nuclear Information System (INIS)

Yates, B. R.; Darby, B. L.; Jones, K. S.; Petersen, D. H.; Hansen, O.; Lin, R.; Nielsen, P. F.; Romano, L.; Doyle, B. L.; Kontos, A.

2012-01-01

The activation and thermal stability of ultra-shallow B + implants in crystalline (c-Ge) and preamorphized Ge (PA-Ge) following rapid thermal annealing was investigated using micro Hall effect and ion beam analysis techniques. The residual implanted dose of ultra-shallow B + implants in Ge was characterized using elastic recoil detection and was determined to correlate well with simulations with a dose loss of 23.2%, 21.4%, and 17.6% due to ion backscattering for 2, 4, and 6 keV implants in Ge, respectively. The electrical activation of ultra-shallow B + implants at 2, 4, and 6 keV to fluences ranging from 5.0 × 10 13 to 5.0 × 10 15 cm −2 was studied using micro Hall effect measurements after annealing at 400–600 °C for 60 s. For both c-Ge and PA-Ge, a large fraction of the implanted dose is rendered inactive due to the formation of a presumable B-Ge cluster. The B lattice location in samples annealed at 400 °C for 60 s was characterized by channeling analysis with a 650 keV H + beam by utilizing the 11 B(p, α)2α nuclear reaction and confirmed the large fraction of off-lattice B for both c-Ge and PA-Ge. Within the investigated annealing range, no significant change in activation was observed. An increase in the fraction of activated dopant was observed with increasing energy which suggests that the surface proximity and the local point defect environment has a strong impact on B activation in Ge. The results suggest the presence of an inactive B-Ge cluster for ultra-shallow implants in both c-Ge and PA-Ge that remains stable upon annealing for temperatures up to 600 °C.

GERDA - a new neutrinoless double beta experiment using 76Ge

International Nuclear Information System (INIS)

Meierhofer, G

2011-01-01

The search for neutrinoless double beta decay (0νssss) has been a very active field for the last decades. While double beta decay has been observed, 0νssss decay still waits for its experimental proof. The GErmanium Detector Array (GERDA) uses 76 Ge, an ideal candidate as it is acting as source and detector simultaneously. Germanium detectors, isotopically enriched in 76 Ge are submerged directly into an ultra pure cryo liquid, which serves as coolant and radiation shield. This concept will allow to reduce the background by up to two orders of magnitude with respect to earlier experiments. GERDA has been constructed in hall A of the underground laboratory LNGS of the INFN in Italy. The experiment started recently with a test run.

Templated self-assembly of SiGe quantum dots

Energy Technology Data Exchange (ETDEWEB)

Dais, Christian

2009-08-19

This PhD thesis reports on the fabrication and characterization of exact aligned SiGe quantum dot structures. In general, SiGe quantum dots which nucleate via the Stranski-Krastanov growth mode exhibit broad size dispersion and nucleate randomly on the surface. However, to tap the full potential of SiGe quantum dots it is necessary to control the positioning and size of the dots on a nanometer length, e.g. for electronically addressing of individual dots. This can be realized by so-called templated self-assembly, which combines top-down lithography with bottom-up selfassembly. In this process the lithographically defined pits serve as pre-defined nucleation points for the epitaxially grown quantum dots. In this thesis, extreme ultraviolet interference lithography at a wavelength of e=13.4 nm is employed for prepatterning of the Si substrates. This technique allows the precise and fast fabrication of high-resolution templates with a high degree of reproducibility. The subsequent epitaxial deposition is either performed by molecular beam epitaxy or low-pressure chemical vapour deposition. It is shown that the dot nucleation on pre-patterned substrates depends strongly on the lithography parameters, e.g. size and periodicity of the pits, as well as on the epitaxy parameters, e.g. growth temperature or material coverage. The interrelations are carefully analyzed by means of scanning force microscopy, transmission electron microscopy and X-ray diffraction measurements. Provided that correct template and overgrowth parameters are chosen, perfectly aligned and uniform SiGe quantum dot arrays of different period, size as well as symmetry are created. In particular, the quantum dot arrays with the so far smallest period (35 nm) and smallest size dispersion are fabricated in this thesis. Furthermore, the strain fields of the underlying quantum dots allow the fabrication of vertically aligned quantum dot stacks. Combining lateral and vertical dot alignment results in three

Dynamics of GeV light-ion-induced reactions

International Nuclear Information System (INIS)

Kwiatkowski, K.; Bracken, D.S.; Foxford, E.R.; Ginger, D.S.; Hsi, W.C.; Morley, K.B.; Viola, V.E.; Wang, G.; Korteling, R.G.; Legrain, R.

1996-09-01

Recent results from studies of the 1.8 - 4.8 GeV 3 He + nat Ag, 197 Au reactions at LNS with the ISiS detector array have shown evidence for a saturation in deposition energy and multifragmentation from a low-density source. The collision dynamics have been examined in the context of intranuclear cascade and BUU models, while breakup phenomena have been compared with EES and SMM models. Fragment-fragment correlations and isotope ratios are also investigated. (K.A.)

Structural transformation in mechanosynthesized bcc Fe-Al-Si(Ge) solid solutions during heating

International Nuclear Information System (INIS)

Kubalova, L.M.; Sviridov, I.A.; Vasilyeva, O.Ya.; Fadeeva, V.I.

2007-01-01

X-ray diffractometry and Moessbauer spectroscopy study of Fe 50 Al 25 Si 25 and Fe 50 Al 25 Ge 25 alloys obtained by mechanical alloying (MA) of elementary powders was carried out. Phase transformation during heating of synthesized products was studied using differential scanning calorimetry (DSC). After 2.5 h of MA monophase alloys containing bcc Fe(Al, Ge) solid solutions Fe(Al, Si) are formed. Fe(Al, Si) is partially ordered B2 type and Fe(Al, Ge) is completely disordered. DSC curves of synthesized alloys displayed the presence of exothermal peaks caused by phase transformation. The metastable Fe(Al, Si) solid solution transformed into FeAl 1-x Si x (B2) and FeSi 1-x Al x (B20) equilibrium phases. The Fe(Al, Ge) solid solution transformed into equilibrium phases through intermediate stage of Fe 6 Ge 3 Al 2 metastable phase formation. The Fe 6 Ge 3 Al 2 phase dissociated into three equilibrium phases: FeAl 1-x Ge x (B2), χ-Fe 6 Ge 5 and η-Fe 13 (Ge, Al) 8 (B8 2 ). The structure of Fe 6 Ge 3 Al 2 was calculated by Rietveld method, the distribution of Al and Ge in the elementary cell and its parameters were calculated. Moessbauer study showed that Fe(Al, Si) and Fe(Al, Ge) solid solutions are paramagnetic. In the equilibrium state the alloy containing Si is also paramagnetic while the alloy with Ge showed ferromagnetic properties

Higgs Candidates in $e^{+}e^{-}$ Interactions at $\\sqrt{s}$ = 206.6 GeV

CERN Document Server

Acciarri, M.; Adriani, O.; Aguilar-Benitez, M.; Alcaraz, J.; Alemanni, G.; Allaby, J.; Aloisio, A.; Alviggi, M.G.; Ambrosi, G.; Anderhub, H.; Andreev, Valery P.; Angelescu, T.; Anselmo, F.; Arefev, A.; Azemoon, T.; Aziz, T.; Bagnaia, P.; Bajo, A.; Baksay, L.; Balandras, A.; Baldew, S.V.; Banerjee, S.; Banerjee, Sw.; Barczyk, A.; Barillere, R.; Bartalini, P.; Basile, M.; Batalova, N.; Battiston, R.; Bay, A.; Becattini, F.; Becker, U.; Behner, F.; Bellucci, L.; Berbeco, R.; Berdugo, J.; Berges, P.; Bertucci, B.; Betev, B.L.; Bhattacharya, S.; Biasini, M.; Biland, A.; Blaising, J.J.; Blyth, S.C.; Bobbink, G.J.; Bohm, A.; Boldizsar, L.; Borgia, B.; Bourilkov, D.; Bourquin, M.; Braccini, S.; Branson, J.G.; Brochu, F.; Buffini, A.; Buijs, A.; Burger, J.D.; Burger, W.J.; Cai, X.D.; Capell, M.; Cara Romeo, G.; Carlino, G.; Cartacci, A.M.; Casaus, J.; Castellini, G.; Cavallari, F.; Cavallo, N.; Cecchi, C.; Cerrada, M.; Cesaroni, F.; Chamizo, M.; Chang, Y.H.; Chaturvedi, U.K.; Chemarin, M.; Chen, A.; Chen, G.; Chen, G.M.; Chen, H.F.; Chen, H.S.; Chiefari, G.; Cifarelli, L.; Cindolo, F.; Civinini, C.; Clare, I.; Clare, R.; Coignet, G.; Colino, N.; Costantini, S.; Cotorobai, F.; de la Cruz, B.; Csilling, A.; Cucciarelli, S.; Dai, T.S.; van Dalen, J.A.; D'Alessandro, R.; de Asmundis, R.; Deglon, P.; Degre, A.; Deiters, K.; della Volpe, D.; Delmeire, E.; Denes, P.; DeNotaristefani, F.; De Salvo, A.; Diemoz, M.; Dierckxsens, M.; van Dierendonck, D.; Dionisi, C.; Dittmar, M.; Dominguez, A.; Doria, A.; Dova, M.T.; Duchesneau, D.; Dufournaud, D.; Duinker, P.; Duran, I.; El Mamouni, H.; Engler, A.; Eppling, F.J.; Erne, F.C.; Ewers, A.; Extermann, P.; Fabre, M.; Falagan, M.A.; Falciano, S.; Favara, A.; Fay, J.; Fedin, O.; Felcini, M.; Ferguson, T.; Fesefeldt, H.; Fiandrini, E.; Field, J.H.; Filthaut, F.; Fisher, P.H.; Fisk, I.; Forconi, G.; Freudenreich, K.; Furetta, C.; Galaktionov, Iouri; Ganguli, S.N.; Garcia-Abia, Pablo; Gataullin, M.; Gau, S.S.; Gentile, S.; Gheordanescu, N.; Giagu, S.; Gong, Z.F.; Grenier, Gerald Jean; Grimm, O.; Gruenewald, M.W.; Guida, M.; van Gulik, R.; Gupta, V.K.; Gurtu, A.; Gutay, L.J.; Haas, D.; Hasan, A.; Hatzifotiadou, D.; Hebbeker, T.; Herve, Alain; Hidas, P.; Hirschfelder, J.; Hofer, H.; Holzner, G.; Hoorani, H.; Hou, S.R.; Hu, Y.; Iashvili, I.; Jin, B.N.; Jones, Lawrence W.; de Jong, P.; Josa-Mutuberria, I.; Khan, R.A.; Kafer, D.; Kaur, M.; Kienzle-Focacci, M.N.; Kim, D.; Kim, J.K.; Kirkby, Jasper; Kiss, D.; Kittel, W.; Klimentov, A.; Konig, A.C.; Kopal, M.; Kopp, A.; Koutsenko, V.; Kraber, M.; Kraemer, R.W.; Krenz, W.; Kruger, A.; Kunin, A.; Ladron de Guevara, P.; Laktineh, I.; Landi, G.; Lebeau, M.; Lebedev, A.; Lebrun, P.; Lecomte, P.; Lecoq, P.; Le Coultre, P.; Lee, H.J.; Le Goff, J.M.; Leiste, R.; Levtchenko, P.; Li, C.; Likhoded, S.; Lin, C.H.; Lin, W.T.; Linde, F.L.; Lista, L.; Liu, Z.A.; Lohmann, W.; Longo, E.; Lu, Y.S.; Lubelsmeyer, K.; Luci, C.; Luckey, David; Lugnier, L.; Luminari, L.; Lustermann, W.; Ma, W.G.; Maity, M.; Malgeri, L.; Malinin, A.; Mana, C.; Mangeol, D.; Mans, J.; Marian, G.; Martin, J.P.; Marzano, F.; Mazumdar, K.; McNeil, R.R.; Mele, S.; Merola, L.; Meschini, M.; Metzger, W.J.; von der Mey, M.; Mihul, A.; Milcent, H.; Mirabelli, G.; Mnich, J.; Mohanty, G.B.; Moulik, T.; Muanza, G.S.; Muijs, A.J.M.; Musicar, B.; Musy, M.; Napolitano, M.; Nessi-Tedaldi, F.; Newman, H.; Niessen, T.; Nisati, A.; Kluge, Hannelies; Ofierzynski, R.; Organtini, G.; Oulianov, A.; Palomares, C.; Pandoulas, D.; Paoletti, S.; Paolucci, P.; Paramatti, R.; Park, H.K.; Park, I.H.; Passaleva, G.; Patricelli, S.; Paul, Thomas Cantzon; Pauluzzi, M.; Paus, C.; Pauss, F.; Pedace, M.; Pensotti, S.; Perret-Gallix, D.; Petersen, B.; Piccolo, D.; Pierella, F.; Pieri, M.; Piroue, P.A.; Pistolesi, E.; Plyaskin, V.; Pohl, M.; Pojidaev, V.; Postema, H.; Pothier, J.; Prokofev, D.O.; Prokofev, D.; Quartieri, J.; Rahal-Callot, G.; Rahaman, M.A.; Raics, P.; Raja, N.; Ramelli, R.; Rancoita, P.G.; Ranieri, R.; Raspereza, A.; Raven, G.; Razis, P.; Ren, D.; Rescigno, M.; Reucroft, S.; Riemann, S.; Riles, Keith; Rodin, J.; Roe, B.P.; Romero, L.; Rosca, A.; Rosier-Lees, S.; Roth, Stefan; Rosenbleck, C.; Rubio, J.A.; Ruggiero, G.; Rykaczewski, H.; Saremi, S.; Sarkar, S.; Salicio, J.; Sanchez, E.; Sanders, M.P.; Schafer, C.; Schegelsky, V.; Schmidt-Kaerst, S.; Schmitz, D.; Schopper, H.; Schotanus, D.J.; Schwering, G.; Sciacca, C.; Seganti, A.; Servoli, L.; Shevchenko, S.; Shivarov, N.; Shoutko, V.; Shumilov, E.; Shvorob, A.; Siedenburg, T.; Son, D.; Smith, B.; Spillantini, P.; Steuer, M.; Stickland, D.P.; Stone, A.; Stoyanov, B.; Straessner, A.; Sudhakar, K.; Sultanov, G.; Sun, L.Z.; Sushkov, S.; Suter, H.; Swain, J.D.; Szillasi, Z.; Sztaricskai, T.; Tang, X.W.; Tauscher, L.; Taylor, L.; Tellili, B.; Timmermans, Charles; Ting, Samuel C.C.; Ting, S.M.; Tonwar, S.C.; Toth, J.; Tully, C.; Tung, K.L.; Uchida, Y.; Ulbricht, J.; Valente, E.; Vesztergombi, G.; Vetlitsky, I.; Vicinanza, D.; Viertel, G.; Villa, S.; Vivargent, M.; Vlachos, S.; Vodopianov, I.; Vogel, H.; Vogt, H.; Vorobev, I.; Vorobov, A.A.; Vorvolakos, A.; Wadhwa, M.; Wallraff, W.; Wang, M.; Wang, X.L.; Wang, Z.M.; Weber, A.; Weber, M.; Wienemann, P.; Wilkens, H.; Wu, S.X.; Wynhoff, S.; Xia, L.; Xu, Z.Z.; Yamamoto, J.; Yang, B.Z.; Yang, C.G.; Yang, H.J.; Yang, M.; Ye, J.B.; Yeh, S.C.; Zalite, A.; Zalite, Yu.; Zhang, Z.P.; Zhu, G.Y.; Zhu, R.Y.; Zichichi, A.; Zilizi, G.; Zimmermann, B.; Zoller, M.

2000-01-01

In a search for the Standard Model Higgs boson, carried out on 212.5 pb-1 of data collected by the L3 detector at the highest LEP centre-of-mass energies, including 116.5 pb-1 above root(s) = 206GeV, an excess of candidates for the process e+e- -> Z* -> HZ is found for Higgs masses near 114.5GeV. We present an analysis of our data and the characteristics of our strongest candidates.

The cross-plane thermoelectric properties of p-Ge/Si0.5Ge0.5 superlattices

International Nuclear Information System (INIS)

Ferre Llin, L.; Samarelli, A.; Weaver, J. M. R.; Dobson, P. S.; Paul, D. J.; Cecchi, S.; Chrastina, D.; Isella, G.; Etzelstorfer, T.; Stangl, J.; Müller Gubler, E.

2013-01-01

The electrical conductivity, Seebeck coefficients, and thermal conductivities of a range of p-type Ge/Si 0.5 Ge 0.5 superlattices designed for thermoelectric generation and grown by low energy plasma enhanced chemical vapor deposition have been measured using a range of microfabricated test structures. For samples with barriers around 0.5 nm in thickness, the measured Seebeck coefficients were comparable to bulk p-SiGe at similar doping levels suggesting the holes see the material as a random bulk alloy rather than a superlattice. The Seebeck coefficients for Ge quantum wells of 2.85 ± 0.85 nm increased up to 533 ± 25 μV/K as the doping was reduced. The thermal conductivities are between 4.5 to 6.0 Wm −1 K −1 which are lower than comparably doped bulk Si 0.3 Ge 0.7 but higher than undoped Si/Ge superlattices. The highest measured figure of merit ZT was 0.080 ± 0.011 obtained for the widest quantum well studied. Analysis suggests that interface roughness is presently limiting the performance and a reduction in the strain between the quantum wells and barriers has the potential to improve the thermoelectric performance

Inverse Resistance Change Cr2Ge2Te6-Based PCRAM Enabling Ultralow-Energy Amorphization.

Science.gov (United States)

Hatayama, Shogo; Sutou, Yuji; Shindo, Satoshi; Saito, Yuta; Song, Yun-Heub; Ando, Daisuke; Koike, Junichi

2018-01-24

Phase-change random access memory (PCRAM) has attracted much attention for next-generation nonvolatile memory that can replace flash memory and can be used for storage-class memory. Generally, PCRAM relies on the change in the electrical resistance of a phase-change material between high-resistance amorphous (reset) and low-resistance crystalline (set) states. Herein, we present an inverse resistance change PCRAM with Cr 2 Ge 2 Te 6 (CrGT) that shows a high-resistance crystalline reset state and a low-resistance amorphous set state. The inverse resistance change was found to be due to a drastic decrease in the carrier density upon crystallization, which causes a large increase in contact resistivity between CrGT and the electrode. The CrGT memory cell was demonstrated to show fast reversible resistance switching with a much lower operating energy for amorphization than a Ge 2 Sb 2 Te 5 memory cell. This low operating energy in CrGT should be due to a small programmed amorphous volume, which can be realized by a high-resistance crystalline matrix and a dominant contact resistance. Simultaneously, CrGT can break the trade-off relationship between the crystallization temperature and operating speed.

The Ho–Ni–Ge system: Isothermal section and new rare-earth nickel germanides

Energy Technology Data Exchange (ETDEWEB)

Morozkin, A.V., E-mail: morozkin@tech.chem.msu.ru [Department of Chemistry, Moscow State University, Leninskie Gory, House 1, Building 3, GSP-2, Moscow 119992 (Russian Federation); Knotko, A.V. [Department of Chemistry, Moscow State University, Leninskie Gory, House 1, Building 3, GSP-2, Moscow 119992 (Russian Federation); Yapaskurt, V.O. [Department of Petrology, Faculty of Geology, Moscow State University, Leninskie Gory, Moscow 119992 (Russian Federation); Yuan, Fang; Mozharivskyj, Y. [Department of Chemistry and Chemical Biology, McMaster University, 1280 Main Street West, Hamilton, Ontario L8S 4M1 (Canada); Pani, M.; Provino, A.; Manfrinetti, P. [Institute SPIN-CNR and Dipartimento di Chimica e Chimica Industriale, Università di Genova, Via Dodecaneso 31, 16146 Genova (Italy)

2015-05-15

The Ho–Ni–Ge system has been investigated at 1070 K and up to ~60 at% Ho by X-ray diffraction and microprobe analyses. Besides the eight known compounds, HoNi{sub 5}Ge{sub 3} (YNi{sub 5}Si{sub 3}-type), HoNi{sub 2}Ge{sub 2} (CeAl{sub 2}Ga{sub 2}-type), Ho{sub 2}NiGe{sub 6} (Ce{sub 2}CuGe{sub 6}-type), HoNiGe{sub 3} (SmNiGe{sub 3}-type), HoNi{sub 0.2÷0.6}Ge{sub 2} (CeNiSi{sub 2}-type), Ho{sub 37÷34}Ni{sub 6÷24}Ge{sub 57÷42} (AlB{sub 2}-type), HoNiGe (TiNiSi-type), Ho{sub 3}NiGe{sub 2} (La{sub 3}NiGe{sub 2}-type), the ternary system contains four new compounds: Ho{sub 3}Ni{sub 11}Ge{sub 4} (Sc{sub 3}Ni{sub 11}Ge{sub 4}-type), HoNi{sub 3}Ge{sub 2} (ErNi{sub 3}Ge{sub 2}-type), Ho{sub 3}Ni{sub 2}Ge{sub 3} (Hf{sub 3}Ni{sub 2}Si{sub 3}-type) and ~Ho{sub 5}Ni{sub 2}Ge{sub 3} (unknown structure). Quasi-binary solid solutions were observed at 1070 K for Ho{sub 2}Ni{sub 17}, HoNi{sub 5}, HoNi{sub 7}, HoNi{sub 3}, HoNi{sub 2}, HoNi and Ho{sub 2}Ge{sub 3}, but no detectable solubility was found for the other binary compounds in the Ho–Ni–Ge system. Based on the magnetization measurements, the HoNi{sub 5}Ge{sub 3}, HoNi{sub 3}Ge{sub 2} and Ho{sub 3}Ni{sub 11}Ge{sub 4} (and isostructural (Tb, Dy){sub 3}Ni{sub 11}Ge{sub 4}) compounds have been found to show paramagnetic behavior down to 5 K, whereas Ho{sub 3}Ni{sub 2}Ge{sub 3} exhibits an antiferromagnetic transition at ~7 K. Additionally, the crystal structure of the new isostructural phases (Y, Yb)Ni{sub 3}Ge{sub 2} (ErNi{sub 3}Ge{sub 2}-type), Er{sub 3}Ni{sub 11}Ge{sub 4} (Sc{sub 3}Ni{sub 11}Ge{sub 4}-type) and (Y, Tb, Dy, Er, Tm){sub 3}Ni{sub 2}Ge{sub 3} (Hf{sub 3}Ni{sub 2}Si{sub 3}-type) has been also investigated. - Graphical abstract: The Ho–Ni–Ge system has been investigated at 1070 K and up to ~60 at.% Ho by X-ray and microprobe analyses. Besides the eight known compounds, i.e. HoNi{sub 5}Ge{sub 3} (YNi{sub 5}Si{sub 3}-type), HoNi{sub 2}Ge{sub 2} (CeAl{sub 2}Ga{sub 2}-type), Ho{sub 2}NiGe{sub 6} (Ce{sub 2

Hut clusters on Ge(001) surfaces studied by STM and synchrotron X-ray diffraction

DEFF Research Database (Denmark)

Nielsen, M.; Smilgies, D.-M.; Feidenhans'l, R.

1996-01-01

Nanoscale hut clusters formed on Ge(001) surfaces by depositing one monolayer of indium and annealing at temperatures between 350 and 500 degrees C were studied by scanning tunnelling microscopy and synchrotron X-ray diffraction. It was found that the hut clusters form regular arrays over...

Multi-dimensional analysis of the reaction anti pp→anti ppπ+π- at 3.6 GeV/c

International Nuclear Information System (INIS)

Laberrigue-Frolow, J.; La Vaissiere, C. de; Yiou, T.P.

1975-01-01

Very preliminary results are presented on the non-annihilation channel antipp→antippπ + π - at the rather low incident anti p momentum of 3.6 GeV/c. The analysis was performed using an interactive cluster analysis technique developed at CERN. This kind of analysis is similar to the well known prism-plot technique developed at MIT. (L.M.K.)

Note on possible glueball production in anti p4He reactions at 0.6 GeV/c incident momentum

International Nuclear Information System (INIS)

Breivik, F.O.; Haatuft, A.; Halsteinslid, A.

1990-10-01

The invariant mass distribution of six-particle systems in the final states of anti p 4 He-reactions at 0.6 GeV/c incident momentum shows two narrow peaks at about 1500 and 1850 MeV/c 2 which may be due to the production of glueballs. 12 refs., 4 figs

An investigation of narrow meson resonance production in antiproton-proton and antiproton-neutron interactions at 6.1 and 8.9 GeV/c

International Nuclear Information System (INIS)

Azooz, F.; Butterworth, I.; Dornan, P.J.

1984-04-01

The authors made a comprehensive search for narrow meson resonance production in reactions of the type p-barN → π +- sub(fast)X and p-barN → psub(fast)(sub(n-bar)sup(p-bar)X at 6.1 and 8.9 GeV.c in a triggered bubble chamber experiment at the SLAC Hybrid Facility. From a study of all accessible inclusive, semi-inclusive and exclusive states, upper limits are given for production of non-strange resonances with width 2 . The authors find two further peaks of statistical significance in excess of 4 standard deviations with masses in the M approx. 2 GeV/c 2 region, and one further multipion peak with mass approx. 1.54 GeV/c 2 . (author)

Higgs Candidates in $e^+ e^-$ Interactions at $\\sqrt{s}$= 206.6 GeV

CERN Document Server

Acciarri, M; Adriani, O; Aguilar-Benítez, M; Alcaraz, J; Alemanni, G; Allaby, James V; Aloisio, A; Alviggi, M G; Ambrosi, G; Anderhub, H; Andreev, V P; Angelescu, T; Anselmo, F; Arefev, A; Azemoon, T; Aziz, T; Bagnaia, P; Bajo, A; Baksay, L; Balandras, A; Baldew, S V; Todorova-Nová, S; Banerjee, Sw; Barczyk, A; Barillère, R; Bartalini, P; Basile, M; Batalova, N; Battiston, R; Bay, A; Becattini, F; Becker, U; Behner, F; Bellucci, L; Berbeco, R; Berdugo, J; Berges, P; Bertucci, B; Betev, B L; Bhattacharya, S; Biasini, M; Biland, A; Blaising, J J; Blyth, S C; Bobbink, Gerjan J; Böhm, A; Boldizsar, L; Borgia, B; Bourilkov, D; Bourquin, Maurice; Braccini, S; Branson, J G; Brochu, F; Buffini, A; Buijs, A; Burger, J D; Burger, W J; Cai, X D; Capell, M; Cara Romeo, G; Carlino, G; Cartacci, A M; Casaus, J; Castellini, G; Cavallari, F; Cavallo, N; Cecchi, C; Cerrada-Canales, M; Cesaroni, F; Chamizo-Llatas, M; Chang, Y H; Chaturvedi, U K; Chemarin, M; Chen, A; Chen, G; Chen, G M; Chen, H F; Chen, H S; Chiefari, G; Cifarelli, Luisa; Cindolo, F; Civinini, C; Clare, I; Clare, R; Coignet, G; Colino, N; Costantini, S; Cotorobai, F; de la Cruz, B; Csilling, Akos; Cucciarelli, S; Dai, T S; van Dalen, J A; D'Alessandro, R; De Asmundis, R; Déglon, P L; Degré, A; Deiters, K; Della Volpe, D; Delmeire, E; Denes, P; De Notaristefani, F; De Salvo, A; Diemoz, M; Dierckxsens, M; Van Dierendonck, D N; Dionisi, C; Dittmar, Michael; Dominguez, A; Doria, A; Dova, M T; Duchesneau, D; Dufournaud, D; Duinker, P; Durán, I; El-Mamouni, H; Engler, A; Eppling, F J; Erné, F C; Ewers, A; Extermann, Pierre; Fabre, M; Falagán, M A; Falciano, S; Favara, A; Fay, J; Fedin, O; Felcini, Marta; Ferguson, T; Fesefeldt, H S; Fiandrini, E; Field, J H; Filthaut, Frank; Fisher, P H; Fisk, I; Forconi, G; Freudenreich, Klaus; Furetta, C; Galaktionov, Yu; Ganguli, S N; García-Abia, P; Gataullin, M; Gau, S S; Gentile, S; Gheordanescu, N; Giagu, S; Gong, Z F; Grenier, G; Grimm, O; Grünewald, M W; Guida, M; van Gulik, R; Gupta, V K; Gurtu, A; Gutay, L J; Haas, D; Hasan, A; Hatzifotiadou, D; Hebbeker, T; Hervé, A; Hidas, P; Hirschfelder, J; Hofer, H; Holzner, G; Hoorani, H; Hou, S R; Hu, Y; Iashvili, I; Jin, B N; Jones, L W; de Jong, P; Josa-Mutuberria, I; Khan, R A; Käfer, D; Kaur, M; Kienzle-Focacci, M N; Kim, D; Kim, J K; Kirkby, Jasper; Kiss, D; Kittel, E W; Klimentov, A; König, A C; Kopal, M; Kopp, A; Koutsenko, V F; Kräber, M H; Krämer, R W; Krenz, W; Krüger, A; Kunin, A; Ladrón de Guevara, P; Laktineh, I; Landi, G; Lebeau, M; Lebedev, A; Lebrun, P; Lecomte, P; Lecoq, P; Le Coultre, P; Lee, H J; Le Goff, J M; Leiste, R; Levchenko, P M; Li Chuan; Likhoded, S A; Lin, C H; Lin, W T; Linde, Frank L; Lista, L; Liu, Z A; Lohmann, W; Longo, E; Lü, Y S; Lübelsmeyer, K; Luci, C; Luckey, D; Lugnier, L; Luminari, L; Lustermann, W; Ma Wen Gan; Maity, M; Malgeri, L; Malinin, A; Maña, C; Mangeol, D J J; Mans, J; Marian, G; Martin, J P; Marzano, F; Mazumdar, K; McNeil, R R; Mele, S; Merola, L; Meschini, M; Metzger, W J; Von der Mey, M; Mihul, A; Milcent, H; Mirabelli, G; Mnich, J; Mohanty, G B; Moulik, T; Muanza, G S; Muijs, A J M; Musicar, B; Musy, M; Napolitano, M; Nessi-Tedaldi, F; Newman, H; Niessen, T; Nisati, A; Nowak, H; Ofierzynski, R A; Organtini, G; Oulianov, A; Palomares, C; Pandoulas, D; Paoletti, S; Paolucci, P; Paramatti, R; Park, H K; Park, I H; Passaleva, G; Patricelli, S; Paul, T; Pauluzzi, M; Paus, C; Pauss, Felicitas; Pedace, M; Pensotti, S; Perret-Gallix, D; Petersen, B; Piccolo, D; Pierella, F; Pieri, M; Piroué, P A; Pistolesi, E; Plyaskin, V; Pohl, M; Pozhidaev, V; Postema, H; Pothier, J; Prokofiev, D O; Prokofev, D; Quartieri, J; Rahal-Callot, G; Rahaman, M A; Raics, P; Raja, N; Ramelli, R; Rancoita, P G; Ranieri, R; Raspereza, A V; Raven, G; Razis, P A; Ren, D; Rescigno, M; Reucroft, S; Riemann, S; Riles, K; Rodin, J; Roe, B P; Romero, L; Rosca, A; Rosier-Lees, S; Roth, S; Rosenbleck, C; Rubio, Juan Antonio; Ruggiero, G; Rykaczewski, H; Saremi, S; Sarkar, S; Salicio, J; Sánchez, E; Sanders, M P; Schäfer, C; Shchegelskii, V; Schmidt-Kärst, S; Schmitz, D; Schopper, Herwig Franz; Schotanus, D J; Schwering, G; Sciacca, C; Seganti, A; Servoli, L; Shevchenko, S; Shivarov, N; Shoutko, V; Shumilov, E; Shvorob, A V; Siedenburg, T; Son, D; Smith, B; Spillantini, P; Steuer, M; Stickland, D P; Stone, A; Stoyanov, B; Strässner, A; Sudhakar, K; Sultanov, G G; Sun, L Z; Sushkov, S V; Suter, H; Swain, J D; Szillási, Z; Sztaricskai, T; Tang, X W; Tauscher, Ludwig; Taylor, L; Tellili, B; Timmermans, C; Ting, Samuel C C; Ting, S M; Tonwar, S C; Tóth, J; Tully, C; Tung, K L; Uchida, Y; Ulbricht, J; Valente, E; Vesztergombi, G; Vetlitskii, I; Vicinanza, D; Viertel, Gert M; Villa, S; Vivargent, M; Vlachos, S; Vodopyanov, I; Vogel, H; Vogt, H; Vorobev, I; Vorobyov, A A; Vorvolakos, A; Wadhwa, M; Wallraff, W; Wang, M; Wang, X L; Wang, Z M; Weber, A; Weber, M; Wienemann, P; Wilkens, H; Wu, S X; Wynhoff, S; Xia, L; Xu, Z Z; Yamamoto, J; Yang, B Z; Yang, C G; Yang, H J; Yang, M; Ye, J B; Yeh, S C; Zalite, A; Zalite, Yu; Zhang, Z P; Zhu, G Y; Zhu, R Y; Zichichi, A; Zilizi, G; Zimmermann, B; Zöller, M

2000-01-01

In a search for the Standard Model Higgs boson, carried out on 212.5~$\\mathrm{pb^{-1}}$ of data collected by the L3 detector at the highest LEP centre-of-mass energies, including 116.5~$\\mathrm{pb^{-1}}$ above $\\sqrt{s} = 206$~GeV, an excess of candidates for the process $e^+ e^- \\rightarrow Z^{*}\\rightarrow HZ$ is found for Higgs masses near 114.5~GeV. We present an analysis of our data and the characteristics of our strongest candidates.

The potential of a Čerenkov Array for Supersymmetry and Cosmology

Science.gov (United States)

Vasileiadis, G.; Falvard, A.; Giraud, E.; Lavalle, J.; Sajjad, S.

2005-02-01

If R-parity is sufficiently well conserved, most of the supersymmetric models predict the existence of a stable, neutral particle, the neutralino, which would be a natural candidate for dark matter. Such particles can annihilate through various channels producing in particular, a faint flux of high energy photons in galactic and extragalactic high density regions. We have considered the potential of a Čerenkov array for exploring a significant fraction of the supersymmetric parameter space. The main constraints are the flux limit, which requires a very large effective area, and the energy threshold which needs reaching lower limit of the order of 15-20 GeV due to the lowest neutralino mass given by accelerators. Combining such constaints leads to an array of at least 16-19 Čerenkov reflectors with diameters of the order of 18m, located at high altitude (5000 m). This instrument would combine wide angle camera and large detection areas. It would also serve as a major tool in Observational Cosmology and Astrophysics above 15-20 GeV up to 1 TeV. Coming after GLAST, it would allow studying in details, at higher energy, the sources detected by this satellite. This instrument would not be able to explore the 10 GeV to sub-10 GeV domain unless higher QE detectors are discovered or larger diameters are considered. A very interesting site would be the Chajnantor-Toco area for this project which requires clear UBV photometric nights.

In-situ Ga doping of fully strained Ge1-xSnx heteroepitaxial layers grown on Ge(001) substrates

International Nuclear Information System (INIS)

Shimura, Y.; Takeuchi, S.; Nakatsuka, O.; Vincent, B.; Gencarelli, F.; Clarysse, T.; Vandervorst, W.; Caymax, M.; Loo, R.; Jensen, A.; Petersen, D.H.; Zaima, S.

2012-01-01

We have investigated the Ga and Sn content dependence of the crystallinity and electrical properties of Ga-doped Ge 1-x Sn x layers that are heteroepitaxially grown on Ge(001) substrates. The doping of Ga to levels as high as the solubility limit of Ga at the growth temperature leads to the introduction of dislocations, due to the increase in the strain of the Ge 1-x Sn x layers. We achieved the growth of a fully strained Ge 0.922 Sn 0.078 layer on Ge with a Ga concentration of 5.5 × 10 19 /cm 3 without any dislocations and stacking faults. The resistivity of the Ga-doped Ge 1-x Sn x layer decreased as the Sn content was increased. This decrease was due to an increase in the carrier concentration, with an increase in the activation level of Ga atoms in the Ge 1-x Sn x epitaxial layers being induced by the introduction of Sn. As a result, we found that the resistivity for the Ge 0.950 Sn 0.050 layer annealed at 600°C for 1 min is 3.6 times less than that of the Ga-doped Ge/Ge sample. - Highlights: ► Heavy Ga-doping into fully strained GeSn layers without the introduction of dislocations ► The uniform Ga depth profile allowed the introduction of Sn ► The decrease in resistivity with an increase in the activation level of Ga was caused by the introduction of Sn

Framework 'interstitial' oxygen in La10(GeO4)5-(GeO5)O2 apatite electrolyte

International Nuclear Information System (INIS)

Pramana, S.S.; White, T.J.

2007-01-01

Oxygen conduction at low temperatures in apatites make these materials potentially useful as electrolytes in solid-oxide fuel cells, but our understanding of the defect structures enabling ion migration is incomplete. While conduction along [001] channels is dominant, considerable inter-tunnel mobility has been recognized. Using neutron powder diffraction of stoichiometric 'La 10 (GeO 4 ) 6 O 3 ', it has been shown that this compound is more correctly described as an La 10 (GeO 4 ) 5- (GeO 5 )O 2 apatite, in which high concentrations of interstitial oxygen reside within the channel walls. It is suggested that these framework interstitial O atoms provide a reservoir of ions that can migrate into the conducting channels of apatite, via a mechanism of inter-tunnel oxygen diffusion that transiently converts GeO 4 tetrahedra to GeO 5 distorted trigonal bipyramids. This structural modification is consistent with known crystal chemistry and may occur generally in oxide apatites. (orig.)

Production, characterization and operation of {sup 76}Ge enriched BEGe detectors in GERDA

Energy Technology Data Exchange (ETDEWEB)

Agostini, M.; Bode, T.; Budjas, D.; Janicsko Csathy, J.; Lazzaro, A.; Schoenert, S. [Technische Universitaet Muenchen, Physik Department and Excellence Cluster Universe, Munich (Germany); Allardt, M.; Barros, N.; Domula, A.; Lehnert, B.; Wester, T.; Wilsenach, H.; Zuber, K. [Technische Universitaet Dresden, Institut fuer Kern- und Teilchenphysik, Dresden (Germany); Andreotti, E. [Institute for Reference Materials and Measurements, Geel (Belgium); Eberhard Karls Universitaet Tuebingen, Physikalisches Institut, Tuebingen (Germany); Bakalyarov, A.M.; Belyaev, S.T.; Lebedev, V.I.; Zhukov, S.V. [National Research Centre ' ' Kurchatov Institute' ' , Moscow (Russian Federation); Balata, M.; D' Andrea, V.; Ioannucci, L.; Junker, M.; Laubenstein, M.; Macolino, C.; Nisi, S.; Zavarise, P. [INFN Laboratori Nazionali del Gran Sasso and Gran Sasso Science Institute, Assergi (Italy); Barabanov, I.; Bezrukov, L.; Gurentsov, V.; Inzhechik, L.V.; Kazalov, V.; Kuzminov, V.V.; Lubsandorzhiev, B.; Yanovich, E. [Institute for Nuclear Research of the Russian Academy of Sciences, Moscow (Russian Federation); Baudis, L.; Benato, G.; Walter, M. [Physik Institut der Universitaet Zuerich, Zurich (Switzerland); Bauer, C.; Heisel, M.; Heusser, G.; Hofmann, W.; Kihm, T.; Kirsch, A.; Knoepfle, K.T.; Lindner, M.; Maneschg, W.; Salathe, M.; Schreiner, J.; Schwingenheuer, B.; Simgen, H.; Smolnikov, A.; Strecker, H.; Wagner, V.; Wegmann, A. [Max-Planck-Institut fuer Kernphysik, Heidelberg (Germany); Becerici-Schmidt, N.; Caldwell, A.; Liao, H.Y.; Majorovits, B.; O' Shaughnessy, C.; Palioselitis, D.; Schulz, O.; Vanhoefer, L. [Max-Planck-Institut fuer Physik, Munich (Germany); Bellotti, E.; Pessina, G. [Universita Milano Bicocca, Dipartimento di Fisica, Milan (Italy); INFN Milano Bicocca, Milan (Italy); Belogurov, S.; Kornoukhov, V.N. [Institute for Nuclear Research of the Russian Academy of Sciences, Moscow (Russian Federation); Institute for Theoretical and Experimental Physics, Moscow (Russian Federation); Bettini, A.; Brugnera, R.; Garfagnini, A.; Hemmer, S.; Sada, C.; Von Sturm, K. [Dipartimento di Fisica e Astronomia dell' Universita di Padova, Padua (Italy); INFN Padova, Padua (Italy); Borowicz, D. [Jagiellonian University, Institute of Physics, Cracow (Poland); Joint Institute for Nuclear Research, Dubna (Russian Federation); Brudanin, V.; Egorov, V.; Kochetov, O.; Nemchenok, I.; Rumyantseva, N.; Shevchik, E.; Zhitnikov, I.; Zinatulina, D. [Joint Institute for Nuclear Research, Dubna (Russian Federation); Cattadori, C.; Gotti, C. [INFN Milano Bicocca, Milan (Italy); Chernogorov, A.; Demidova, E.V.; Kirpichnikov, I.V.; Vasenko, A.A. [Institute for Theoretical and Experimental Physics, Moscow (Russian Federation); Falkenstein, R.; Freund, K.; Grabmayr, P.; Hegai, A.; Jochum, J.; Schmitt, C.; Schuetz, A.K. [Eberhard Karls Universitaet Tuebingen, Physikalisches Institut, Tuebingen (Germany); Frodyma, N.; Misiaszek, M.; Pelczar, K.; Wojcik, M.; Zuzel, G. [Jagiellonian University, Institute of Physics, Cracow (Poland); Gangapshev, A. [Max-Planck-Institut fuer Kernphysik, Heidelberg (Germany); Institute for Nuclear Research of the Russian Academy of Sciences, Moscow (Russian Federation); Gusev, K. [Joint Institute for Nuclear Research, Dubna (Russian Federation); National Research Centre ' ' Kurchatov Institute' ' , Moscow (Russian Federation); Technische Universitaet Muenchen, Physik Department and Excellence Cluster Universe, Munich (Germany); Hult, M.; Lutter, G. [Institute for Reference Materials and Measurements, Geel (Belgium); Klimenko, A.; Lubashevskiy, A. [Joint Institute for Nuclear Research, Dubna (Russian Federation); Max-Planck-Institut fuer Kernphysik, Heidelberg (Germany); Lippi, I.; Stanco, L.; Ur, C.A. [INFN Padova, Padua (Italy); Pandola, L. [INFN Laboratori Nazionali del Sud, Catania (Italy); Pullia, A.; Riboldi, S. [Universita degli Studi di Milano, Dipartimento di Fisica, Milan (Italy); INFN Milano (Italy); Shirchenko, M. [Joint Institute for Nuclear Research, Dubna (Russian Federation); National Research Centre ' ' Kurchatov Institute' ' , Moscow (Russian Federation); Collaboration: GERDA Collaboration

2015-02-01

The GERmanium Detector Array (GERDA) at the Gran Sasso Underground Laboratory (LNGS) searches for the neutrinoless double beta decay (0νββ) of {sup 76}Ge. Germanium detectors made of material with an enriched {sup 76}Ge fraction act simultaneously as sources and detectors for this decay. During Phase I of the experiment mainly refurbished semi-coaxial Ge detectors from former experiments were used. For the upcoming Phase II, 30 new {sup 76}Ge enriched detectors of broad energy germanium (BEGe)- type were produced. A subgroup of these detectors has already been deployed in GERDA during Phase I. The present paper reviews the complete production chain of these BEGe detectors including isotopic enrichment, purification, crystal growth and diode production. The efforts in optimizing the mass yield and in minimizing the exposure of the {sup 76}Ge enriched germanium to cosmic radiation during processing are described. Furthermore, characterization measurements in vacuum cryostats of the first subgroup of seven BEGe detectors and their long-term behavior in liquid argon are discussed. The detector performance fulfills the requirements needed for the physics goals of GERDA Phase II. (orig.)

Production, characterization and operation of {sup 76}Ge enriched BEGe detectors in GERDA

Energy Technology Data Exchange (ETDEWEB)

Agostini, M. [Physik Department and Excellence Cluster Universe, Technische Universität München, Munich (Germany); Allardt, M. [Institut für Kern- und Teilchenphysik, Technische Universität Dresden, Dresden (Germany); Andreotti, E. [Institute for Reference Materials and Measurements, Geel (Belgium); Physikalisches Institut, Eberhard Karls Universität Tübingen, Tübingen (Germany); Bakalyarov, A. M. [National Research Centre “Kurchatov Institute”, Moscow (Russian Federation); Balata, M. [INFN Laboratori Nazionali del Gran Sasso and Gran Sasso Science Institute, Assergi (Italy); and others

2015-02-03

The GERmanium Detector Array (Gerda) at the Gran Sasso Underground Laboratory (LNGS) searches for the neutrinoless double beta decay (0νββ) of {sup 76}Ge. Germanium detectors made of material with an enriched {sup 76}Ge fraction act simultaneously as sources and detectors for this decay. During Phase I of theexperiment mainly refurbished semi-coaxial Ge detectors from former experiments were used. For the upcoming Phase II, 30 new {sup 76}Ge enriched detectors of broad energy germanium (BEGe)-type were produced. A subgroup of these detectors has already been deployed in Gerda during Phase I. The present paper reviews the complete production chain of these BEGe detectors including isotopic enrichment, purification, crystal growth and diode production. The efforts in optimizing the mass yield and in minimizing the exposure of the {sup 76}Ge enriched germanium to cosmic radiation during processing are described. Furthermore, characterization measurements in vacuum cryostats of the first subgroup of seven BEGe detectors and their long-term behavior in liquid argon are discussed. The detector performance fulfills the requirements needed for the physics goals of Gerda Phase II.

Measurement of the Total Cross Section for Hadronic Production by e+e- Annihilation at Energies between 2.6-5 GeV

International Nuclear Information System (INIS)

Bai, J. Z.; Ban, Y.; Bian, J. G.; Chen, G. P.; Chen, H. F.; Chen, J.; Chen, J. C.; Chen, Y.; Chen, Y. B.; Chen, Y. Q.

2000-01-01

Using the upgraded Beijing Spectrometer, we have measured the total cross section for e + e - annihilation into hadronic final states at center-of-mass energies of 2.6, 3.2, 3.4, 3.55, 4.6, and 5.0 GeV. Values of R , σ(e + e - →hadrons )/σ(e + e - → μ + μ - ) , are determined. (c) 2000 The American Physical Society

The majorana {sup 76}Ge double-beta decay project

Energy Technology Data Exchange (ETDEWEB)

Aalseth, C.E.; Adles, E.; Anderson, D.; Avignone, F.T.; Barabash, A.; Bowyer, T.W.; Brodzinski, R.L.; Brudanin, V.; Champangne, A.; Collar, J.I.; Doe, P.J.; Egorov, S.; Elliott, S.R.; Farach, H.A.; Gaitskell, R.; Jordan, D.; Jain, R.K.; Kazkaz, K.; King, G.; Kochetov, O.; Konovalov, S.; Kouzes, R.; Miley, H.S.; Palms, J.M.; Pitts, W.K.; Reeves, J.H.; Robertson, R.G.H.; Rohm, R.; Sandukovsky, S.; Smith, L.E.; Stekhanov, V.; Thompson, R.C.; Tornow, W.; Umatov' , V.; Warner, R.; Webb, J.; Wilkerson, J.F.; Young, A

2003-07-01

The interest and relevance of next-generation 0{sub v} {beta}{beta}-decay experiments is increasing. Even with nonzero neutrino mass strongly suggested by solar and atmospheric neutrino experiments sensitive to {delta}m{sup 2}, 0{sub v} {beta}{beta}-decay experiments are still the only way to establish the Dirac or Majorana nature of neutrinos by measuring the effective electron neutrino mass, . In addition, the atmospheric neutrino oscillation experiments imply that at least one neutrino has a mass greater than about 50 meV. The Majorana Experiment expects to probe an effective neutrino mass near this critical value. Majorana is a next-generation {sup 76}Ge double-beta decay search. It will employ 500 kg of Ge, isotopically enriched to 86% in {sup 76}Ge, in the form of {approx} 200 detectors in a close-packed array. Each crystal will be electronically segmented and each segment fitted with pulse-shape analysis electronics. This combination of segmentation and pulse-shape analysis significantly improves our ability to discriminate neutrinoless double beta-decay from internal cosmogenic {sup 68}Ge and {sup 60}Co. The half-life sensitivity is estimated to be 4.2 x 10{sup 27} y corresponding to a range of {<=} 20 - 70 meV, depending on the nuclear matrix elements used to interpret the data.

Synthesis and characterization of Ge–Cr-based intermetallic compounds: GeCr3, GeCCr3, and GeNCr3

International Nuclear Information System (INIS)

Lin, S.; Tong, P.; Wang, B.S.; Huang, Y.N.; Song, W.H.; Sun, Y.P.

2014-01-01

Highlights: • Polycrystalline samples of GeCr 3 , GeCCr 3 , and GeNCr 3 are synthesized by using solid state reaction method. • A good quality of our samples is verified by the Rietveld refinement and electrical transport measurement. • We present a comprehensive understanding of physical properties of GeCr 3 , GeCCr 3 , and GeNCr 3 . -- Abstract: We report the synthesis of GeCr 3 , GeCCr 3 , and GeNCr 3 polycrystalline compounds, and present a systematic study of this series by the measurements of X-ray diffraction (XRD), magnetism, electrical/thermal transport, specific heat, and Hall coefficient. Good quality of our samples is verified by quite small value of residual resistivity and considerably large residual resistivity ratio. Based on the Rietveld refinement of XRD data, the crystallographic parameters are obtained, and, correspondingly, the sketches of crystal structure are plotted for all the samples. The ground states of GeCr 3 , GeCCr 3 , and GeNCr 3 are paramagnetic/antiferromagnetic metal, and even a Fermi-liquid behavior is observed in electrical transport at low temperatures. Furthermore, the analysis of the thermal conductivity data suggests the electron thermal conductivity plays a major role in total thermal conductivity for GeCr 3 at low temperatures, while the phonon thermal conductivity is dominant for GeCCr 3 and GeNCr 3 at high temperatures. The negative value of Seebeck coefficient and Hall coefficient indicate that the charge carriers are electron-type for GeCr 3 , GeCCr 3 , and GeNCr 3

Ge extraction from gasification fly ash

Energy Technology Data Exchange (ETDEWEB)

Oriol Font; Xavier Querol; Angel Lopez-Soler; Jose M. Chimenos; Ana I. Fernandez; Silvia Burgos; Francisco Garcia Pena [Institute of Earth Sciences ' Jaume Almera' , Barcelona (Spain)

2005-08-01

Water-soluble germanium species (GeS{sub 2}, GeS and hexagonal-GeO{sub 2}) are generated during coal gasification and retained in fly ash. This fact together with the high market value of this element and the relatively high contents in the fly ashes of the Puertollano Integrated Gasification in Combined Cycle (IGCC) plant directed our research towards the development of an extraction process for this element. Major objectives of this research was to find a low cost and environmentally suitable process. Several water based extraction tests were carried out using different Puertollano IGCC fly ash samples, under different temperatures, water/fly ash ratios, and extraction times. High Ge extraction yields (up to 84%) were obtained at room temperature (25{sup o}C) but also high proportions of other trace elements (impurities) were simultaneously extracted. Increasing the extraction temperature to 50, 90 and 150{sup o}C, Ge extraction yields were kept at similar levels, while reducing the content of impurities, the water/fly ash ratio and extraction time. The experimental data point out the influence of chloride, calcium and sulphide dissolutions on the Ge extraction. 16 refs., 9 figs., 6 tabs.

X-ray imaging for studying behavior of liquids at high pressures and high temperatures using Paris-Edinburgh press

International Nuclear Information System (INIS)

Kono, Yoshio; Kenney-Benson, Curtis; Park, Changyong; Shen, Guoyin; Shibazaki, Yuki; Wang, Yanbin

2015-01-01

Several X-ray techniques for studying structure, elastic properties, viscosity, and immiscibility of liquids at high pressures have been integrated using a Paris-Edinburgh press at the 16-BM-B beamline of the Advanced Photon Source. Here, we report the development of X-ray imaging techniques suitable for studying behavior of liquids at high pressures and high temperatures. White X-ray radiography allows for imaging phase separation and immiscibility of melts at high pressures, identified not only by density contrast but also by phase contrast imaging in particular for low density contrast liquids such as silicate and carbonate melts. In addition, ultrafast X-ray imaging, at frame rates up to ∼10 5 frames/second (fps) in air and up to ∼10 4 fps in Paris-Edinburgh press, enables us to investigate dynamics of liquids at high pressures. Very low viscosities of melts similar to that of water can be reliably measured. These high-pressure X-ray imaging techniques provide useful tools for understanding behavior of liquids or melts at high pressures and high temperatures

X-ray imaging for studying behavior of liquids at high pressures and high temperatures using Paris-Edinburgh press

Energy Technology Data Exchange (ETDEWEB)

Kono, Yoshio; Kenney-Benson, Curtis; Park, Changyong; Shen, Guoyin [HPCAT, Geophysical Laboratory, Carnegie Institution of Washington, 9700 S. Cass Ave., Argonne, Illinois 60439 (United States); Shibazaki, Yuki [Frontier Research Institute for Interdisciplinary Sciences, Tohoku University, Aramaki aza Aoba 6-3, Aoba-ku, Sendai 980-8578 (Japan); Wang, Yanbin [GeoSoilEnviroCARS, Center for Advanced Radiation Sources, The University of Chicago, 5640 S. Ellis Avenue, Chicago, Illinois 60637 (United States)

2015-07-15

Several X-ray techniques for studying structure, elastic properties, viscosity, and immiscibility of liquids at high pressures have been integrated using a Paris-Edinburgh press at the 16-BM-B beamline of the Advanced Photon Source. Here, we report the development of X-ray imaging techniques suitable for studying behavior of liquids at high pressures and high temperatures. White X-ray radiography allows for imaging phase separation and immiscibility of melts at high pressures, identified not only by density contrast but also by phase contrast imaging in particular for low density contrast liquids such as silicate and carbonate melts. In addition, ultrafast X-ray imaging, at frame rates up to ∼10{sup 5} frames/second (fps) in air and up to ∼10{sup 4} fps in Paris-Edinburgh press, enables us to investigate dynamics of liquids at high pressures. Very low viscosities of melts similar to that of water can be reliably measured. These high-pressure X-ray imaging techniques provide useful tools for understanding behavior of liquids or melts at high pressures and high temperatures.

Sensor array signal processing

CERN Document Server

Naidu, Prabhakar S

2009-01-01

Chapter One: An Overview of Wavefields 1.1 Types of Wavefields and the Governing Equations 1.2 Wavefield in open space 1.3 Wavefield in bounded space 1.4 Stochastic wavefield 1.5 Multipath propagation 1.6 Propagation through random medium 1.7 ExercisesChapter Two: Sensor Array Systems 2.1 Uniform linear array (ULA) 2.2 Planar array 2.3 Distributed sensor array 2.4 Broadband sensor array 2.5 Source and sensor arrays 2.6 Multi-component sensor array2.7 ExercisesChapter Three: Frequency Wavenumber Processing 3.1 Digital filters in the w-k domain 3.2 Mapping of 1D into 2D filters 3.3 Multichannel Wiener filters 3.4 Wiener filters for ULA and UCA 3.5 Predictive noise cancellation 3.6 Exercises Chapter Four: Source Localization: Frequency Wavenumber Spectrum4.1 Frequency wavenumber spectrum 4.2 Beamformation 4.3 Capon's w-k spectrum 4.4 Maximum entropy w-k spectrum 4.5 Doppler-Azimuth Processing4.6 ExercisesChapter Five: Source Localization: Subspace Methods 5.1 Subspace methods (Narrowband) 5.2 Subspace methods (B...

The distribution in transverse momentum of 5 GeV/c secondaries produced at 53 GeV in the centre of mass

CERN Document Server

Albrow, M G; Bogaerts, A; Bošnjakovič, B; Brooks, J R; Clegg, A B; Erné, F C; Gee, C N P; Kanaris, A D; Lacourt, A; Locke, D H; Loebinger, F K; Murphy, P G; Rudge, A; Sens, Johannes C; Terwilliger, K M; Van der Veen, F

1972-01-01

Data are reported on the distribution in transverse momentum of 5 GeV /c pi /sup +or-/, K/sup +or-/, p and p, produced in proton proton collisions at 53 GeV centre of mass energy at the CERN ISR. At this energy the magnitude and p/sub T/ dependence of the invariant cross- section appears to be approximately equal to that at 19 GeV accelerator energy (at the same value of the Feynman variable x), for pi /sup +or-/ and K/sup +/ in the range 0.15

GeV/c. (6 refs).

Interfacial processes in the Pd/a-Ge:H system

Science.gov (United States)

Edelman, F.; Cytermann, C.; Brener, R.; Eizenberg, M.; Weil, R.; Beyer, W.

1993-06-01

The kinetics of phase transformation has been studied in a two-layer structure of Pd/a-Ge:H after vacuum annealing at temperatures from 180 to 500°C. The a-Ge:H was deposited at 250°C on both c-Si and cleaved NaCl substrates in an RF glow discharge from a GeH 4/H 2 mixture. It was found that, similarly to the Pd/c-Ge and the Pd/a-Ge (e-gun deposited) systems, in the case of 0.15-0.2 μm Pd/0.6-1.0 μm a-Ge:H interfacial germanides formed first through the production of Pd 2Ge (plus a small amount of PdGe), and then PdGe was produced. The growth of both compounds was found to be diffusion-controlled. The nonreacted a-Ge:H layer beneath the germanide overlayer crystallized at 400-500°C. A reverse sequence of germanides formation was revealed in the case of 50 nm Pd/30 nm a-Ge:H, studied by in situ heat treatment in the TEM utilizing non-supported samples. The first germanide detected was PdGe and then, as a result of PdGe and Ge reaction or the PdGe decomposition, Pd 2Ge formed. The temperature dependence of the incubation time before the first ˜ 10 nm PdGe grains formed, followed an Arrhenius curve with an activation energy of 1.45 eV.

Single-fabrication-step Ge nanosphere/SiO2/SiGe heterostructures: a key enabler for realizing Ge MOS devices

Science.gov (United States)

Liao, P. H.; Peng, K. P.; Lin, H. C.; George, T.; Li, P. W.

2018-05-01

We report channel and strain engineering of self-organized, gate-stacking heterostructures comprising Ge-nanosphere gate/SiO2/SiGe-channels. An exquisitely-controlled dynamic balance between the concentrations of oxygen, Si, and Ge interstitials was effectively exploited to simultaneously create these heterostructures in a single oxidation step. Process-controlled tunability of the channel length (5–95 nm diameters for the Ge-nanospheres), gate oxide thickness (2.5–4.8 nm), as well as crystal orientation, chemical composition and strain engineering of the SiGe-channel was achieved. Single-crystalline (100) Si1‑x Ge x shells with Ge content as high as x = 0.85 and with a compressive strain of 3%, as well as (110) Si1‑x Ge x shells with Ge content of x = 0.35 and corresponding compressive strain of 1.5% were achieved. For each crystal orientation, our high Ge-content, highly-stressed SiGe shells feature a high degree of crystallinity and thus, provide a core ‘building block’ required for the fabrication of Ge-based MOS devices.

Ge/SiGe superlattices for nanostructured thermoelectric modules

International Nuclear Information System (INIS)

Chrastina, D.; Cecchi, S.; Hague, J.P.; Frigerio, J.; Samarelli, A.; Ferre–Llin, L.; Paul, D.J.; Müller, E.; Etzelstorfer, T.; Stangl, J.; Isella, G.

2013-01-01

Thermoelectrics are presently used in a number of applications for both turning heat into electricity and also for using electricity to produce cooling. Mature Si/SiGe and Ge/SiGe heteroepitaxial growth technology would allow highly efficient thermoelectric materials to be engineered, which would be compatible and integrable with complementary metal oxide silicon micropower circuits used in autonomous systems. A high thermoelectric figure of merit requires that electrical conductivity be maintained while thermal conductivity is reduced; thermoelectric figures of merit can be improved with respect to bulk thermoelectric materials by fabricating low-dimensional structures which enhance the density of states near the Fermi level and through phonon scattering at heterointerfaces. We have grown and characterized Ge-rich Ge/SiGe/Si superlattices for nanofabricated thermoelectric generators. Low-energy plasma-enhanced chemical vapor deposition has been used to obtain nanoscale-heterostructured material which is several microns thick. Crystal quality and strain control have been investigated by means of high resolution X-ray diffraction. High-resolution transmission electron microscopy images confirm the material and interface quality. Electrical conductivity has been characterized by the mobility spectrum technique. - Highlights: ► High-quality Ge/SiGe multiple quantum wells for thermoelectric applications ► Mobility spectra of systems featuring a large number of parallel conduction channels ► Competitive thermoelectric properties measured in single devices

Global observables in Si + nucleus collisions at 14.6 GeV per nucleon

International Nuclear Information System (INIS)

Shivakumar, B.; Greene, S.V.; Hemmick, T.K.; Majka, R.; Mitchell, J.T.; Rotondo, F.; Sandweiss, J.; Barrette, J.; Mark, S.K.; Pruneau, C.; Bellwied, R.; Braun-Munzinger, P.; David, G.; Herrmann, N.; Ingold, G.; Llope, W.J.; Muthuswamy, M.; Stachel, J.; Waters, L.; Cleland, W.E.; Jayananda, K.; Kraus, D.; Sonnadara, U.; Fatyga, M.; Hogue, R.W.; Lissauer, D.; Ludlam, T.; Makowiecki, D.; O'Brien, E.; Polychronakos, V.; Takai, H.; Throwe, T.; Woody, C.; Fox, D.; Sunier, J.; Van Hecke, H.; Hall, J.; Wolfe, D.; Heifetz, R.; Rawool-Sullivan, M.; Simon, J.; Sullivan, J.P.; Wolf, K.

1990-01-01

A simultaneous determination of the transverse energy produced, and the multiplicity of beam rapidity nucleons surviving nucleus interactions provides an effective way to quantify the extent of stopping achieved therein. The authors have studied collisions between 28 Si projectiles with energies E lab /A = 14.6 GeV and targets of Al, Cu, and Pb. Transverse energy production has been measured calorimetrically in a pseudorapidity interval -0.5 < η < 0.8, and correlated with the multiplicity of beam rapidity protons and neutrons detected in a 0.8 degree cone centered on the beam direction. Theoretical calculations have been performed to describe the data, and demonstrate quantitatively the large amount of nuclear stopping in these collisions. They also indicate the importance of rescattering in the production of transverse energy

A time-of-flight array for 1 to 2 GeV/c particles

International Nuclear Information System (INIS)

Sum, V.; Berdoz, A.R.; Davis, C.A.

1992-09-01

A time-of-flight detector array has been developed for an experiment searching for the strangeness -2 H-particle. The array consists of 40 logs of plastic scintillator with dimensions 2.00 x 0.085 x 0.050 m 3 . The photomultiplier tubes are coupled to the scintillators without the use of light guides, and the mounting of the bars is designed for easy adjustment and servicing. The average intrinsic time resolution was found to be 110 ps σ. 8 refs., 9 figs., 1 tab

A time-of-flight array for 1 to 2 GeV/c particles

Energy Technology Data Exchange (ETDEWEB)

Sum, V; Berdoz, A R; Davis, C A [Manitoba Univ., Winnipeg, MB (Canada). Dept. of Physics; and others

1992-09-01

A time-of-flight detector array has been developed for an experiment searching for the strangeness -2 H-particle. The array consists of 40 logs of plastic scintillator with dimensions 2.00 x 0.085 x 0.050 m{sup 3}. The photomultiplier tubes are coupled to the scintillators without the use of light guides, and the mounting of the bars is designed for easy adjustment and servicing. The average intrinsic time resolution was found to be 110 ps {sigma}. 8 refs., 9 figs., 1 tab.

The ASTRI mini-array within the future Cherenkov Telescope Array

Directory of Open Access Journals (Sweden)

Vercellone Stefano

2016-01-01

Full Text Available The Cherenkov Telescope Array (CTA is a large collaborative effort aimed at the design and operation of an observatory dedicated to very high-energy gamma-ray astrophysics in the energy range from a few tens of GeV to above 100 TeV, which will yield about an order of magnitude improvement in sensitivity with respect to the current major arrays (H.E.S.S., MAGIC, and VERITAS. Within this framework, the Italian National Institute for Astrophysics is leading the ASTRI project, whose main goals are the design and installation on Mt. Etna (Sicily of an end-to-end dual-mirror prototype of the CTA small size telescope (SST and the installation at the CTA Southern site of a dual-mirror SST mini-array composed of nine units with a relative distance of about 300 m. The innovative dual-mirror Schwarzschild-Couder optical solution adopted for the ASTRI Project allows us to substantially reduce the telescope plate-scale and, therefore, to adopt silicon photo-multipliers as light detectors. The ASTRI mini-array is a wider international effort. The mini-array, sensitive in the energy range 1–100 TeV and beyond with an angular resolution of a few arcmin and an energy resolution of about 10–15%, is well suited to study relatively bright sources (a few × 10−12 erg cm−2 s−1 at 10 TeV at very high energy. Prominent sources such as extreme blazars, nearby well-known BL Lac objects, Galactic pulsar wind nebulae, supernovae remnants, micro-quasars, and the Galactic Center can be observed in a previously unexplored energy range. The ASTRI mini-array will extend the current IACTs sensitivity well above a few tens of TeV and, at the same time, will allow us to compare our results on a few selected targets with those of current (HAWC and future high-altitude extensive air-shower detectors.

The Majorana Demonstrator: Progress towards showing the feasibility of a tonne-scale 76Ge neutrinoless double-beta decay experiment

Science.gov (United States)

Finnerty, P.; Aguayo, E.; Amman, M.; Avignone, F. T., Iii; Barabash, A. S.; Barton, P. J.; Beene, J. R.; Bertrand, F. E.; Boswell, M.; Brudanin, V.; Busch, M.; Chan, Y.-D.; Christofferson, C. D.; Collar, J. I.; Combs, D. C.; Cooper, R. J.; Detwiler, J. A.; Doe, P. J.; Efremenko, Yu; Egorov, V.; Ejiri, H.; Elliott, S. R.; Esterline, J.; Fast, J. E.; Fields, N.; Fraenkle, F. M.; Galindo-Uribarri, A.; Gehman, V. M.; Giovanetti, G. K.; Green, M. P.; Guiseppe, V. E.; Gusey, K.; Hallin, A. L.; Hazama, R.; Henning, R.; Hoppe, E. W.; Horton, M.; Howard, S.; Howe, M. A.; Johnson, R. A.; Keeter, K. J.; Kidd, M. F.; Knecht, A.; Kochetov, O.; Konovalov, S. I.; Kouzes, R. T.; LaFerriere, B. D.; Leon, J.; Leviner, L. E.; Loach, J. C.; Luke, P. N.; MacMullin, S.; Marino, M. G.; Martin, R. D.; Merriman, J. H.; Miller, M. L.; Mizouni, L.; Nomachi, M.; Orrell, J. L.; Overman, N. R.; Perumpilly, G.; Phillips, D. G., Ii; Poon, A. W. P.; Radford, D. C.; Rielage, K.; Robertson, R. G. H.; Ronquest, M. C.; Schubert, A. G.; Shima, T.; Shirchenko, M.; Snavely, K. J.; Steele, D.; Strain, J.; Timkin, V.; Tornow, W.; Varner, R. L.; Vetter, K.; Vorren, K.; Wilkerson, J. F.; Yakushev, E.; Yaver, H.; Young, A. R.; Yu, C.-H.; Yumatov, V.; Majorana Collaboration

2014-03-01

The Majorana Demonstrator will search for the neutrinoless double-beta decay (0vββ) of the 76Ge isotope with a mixed array of enriched and natural germanium detectors. The observation of this rare decay would indicate the neutrino is its own anti-particle, demonstrate that lepton number is not conserved, and provide information on the absolute mass-scale of the neutrino. The Demonstrator is being assembled at the 4850 foot level of the Sanford Underground Research Facility in Lead, South Dakota. The array will be contained in a low-background environment and surrounded by passive and active shielding. The goals for the Demonstrator are: demonstrating a background rate less than 3 t-1 y-1 in the 4 keV region of interest (ROI) surrounding the 2039 keV 76Ge endpoint energy; establishing the technology required to build a tonne-scale germanium based double-beta decay experiment; testing the recent claim of observation of 0vββ [1]; and performing a direct search for light WIMPs (3-10 GeV/c2).

Ge-intercalated graphene: The origin of the p-type to n-type transition

KAUST Repository

Kaloni, Thaneshwor P.

2012-09-01

Recently huge interest has been focussed on Ge-intercalated graphene. In order to address the effect of Ge on the electronic structure, we study Ge-intercalated free-standing C 6 and C 8 bilayer graphene, bulk C 6Ge and C 8Ge, as well as Ge-intercalated graphene on a SiC(0001) substrate, by density functional theory. In the presence of SiC(0001), there are three ways to obtain n-type graphene: i) intercalation between C layers; ii) intercalation at the interface to the substrate in combination with Ge deposition on the surface; and iii) cluster intercalation. All other configurations under study result in p-type states irrespective of the Ge coverage. We explain the origin of the different doping states and establish the conditions under which a transition occurs. © Copyright EPLA, 2012.

Gait in children with cerebral palsy : observer reliability of Physician Rating Scale and Edinburgh Visual Gait Analysis Interval Testing scale

NARCIS (Netherlands)

Maathuis, KGB; van der Schans, CP; van Iperen, A; Rietman, HS; Geertzen, JHB

2005-01-01

The aim of this study was to test the inter- and intra-observer reliability of the Physician Rating Scale (PRS) and the Edinburgh Visual Gait Analysis Interval Testing (GAIT) scale for use in children with cerebral palsy (CP). Both assessment scales are quantitative observational scales, evaluating

The germanides Er{sub 5}Pd{sub 4}Ge{sub 8} and Tm{sub 5}Pd{sub 4}Ge{sub 8}. 3D [Pd{sub 4}Ge{sub 8}] polyanions with Ge{sub 2} dumb-bells and Ge{sub 4} chains in cis-conformation

Energy Technology Data Exchange (ETDEWEB)

Heying, Birgit; Rodewald, Ute C.; Poettgen, Rainer [Muenster Univ. (Germany). Inst. fuer Anorganische und Analytische Chemie

2017-07-01

Tm{sub 5}Pd{sub 4}Ge{sub 8} was synthesized by melting of the elements in an arc-melting furnace. The new germanide was characterized by powder and single-crystal X-ray diffraction: own structure type, P2{sub 1}/m, a=574.3(1), b=1380.4(3), c=836.4(1) pm, β=107.57(2) , V=0.6321 nm{sup 3}, wR2=0.0578, 2533 F{sup 2} values, 86 variables. The palladium and germanium atoms built up a three-dimensional [Pd{sub 4}Ge{sub 8}]{sup 15-} polyanionic network which contains a unique germanium substructure composed of the Zintl anions Ge{sub 2}{sup 6-} dumb-bells and Ge{sub 4}{sup 10-} chains in cis-conformation. The palladium atoms within the network have distorted square pyramidal germanium coordination. The three crystallographically independent thulium atoms have coordination numbers 15, 16 and 17 with partial motifs of the Frank-Kasper type polyhedra. The isotypic germanide Er{sub 5}Pd{sub 4}Ge{sub 8} forms only after annealing the arc-melted sample at 1070 K for 1 week: a=575.14(9), b=1386.3(3), c=838.4(1) pm, β=107.51(2) , V=0.6375 nm{sup 3}.

Bi surfactant mediated growth for fabrication of Si/Ge nanostructures and investigation of Si/Ge intermixing by STM

Energy Technology Data Exchange (ETDEWEB)

Paul, N.

2007-10-26

}(3) x {radical}(3)) reconstruction. In Chapter 6, we discuss the Ge-Si intermixing on surfaces with different reconstruction, such as the 1/3 ML Bi ({radical}(3) x {radical}(3)) reconstruction and the Si (7 x 7) reconstruction. In the last chapter, an attempt has been made to elucidate the need for utilizing two dimensional Bi surfactant Ge/Si surfaces for industrial applications as transistors by demonstrating the quick, efficient and complete removal of Bi surfactant monolayer from thick Ge layers by ion beam sputtering without damaging the underlying Ge/Si layer. (orig.)

Effect of Ge Content on the Formation of Ge Nanoclusters in Magnetron-Sputtered GeZrOx-Based Structures.

Science.gov (United States)

Khomenkova, L; Lehninger, D; Kondratenko, O; Ponomaryov, S; Gudymenko, O; Tsybrii, Z; Yukhymchuk, V; Kladko, V; von Borany, J; Heitmann, J

2017-12-01

Ge-rich ZrO 2 films, fabricated by confocal RF magnetron sputtering of pure Ge and ZrO 2 targets in Ar plasma, were studied by multi-angle laser ellipsometry, Raman scattering, Auger electron spectroscopy, Fourier transform infrared spectroscopy, and X-ray diffraction for varied deposition conditions and annealing treatments. It was found that as-deposited films are homogeneous for all Ge contents, thermal treatment stimulated a phase separation and a formation of crystalline Ge and ZrO 2 . The "start point" of this process is in the range of 640-700 °C depending on the Ge content. The higher the Ge content, the lower is the temperature necessary for phase separation, nucleation of Ge nanoclusters, and crystallization. Along with this, the crystallization temperature of the tetragonal ZrO 2 exceeds that of the Ge phase, which results in the formation of Ge crystallites in an amorphous ZrO 2 matrix. The mechanism of phase separation is discussed in detail.

Fabrication of multilayered Ge nanocrystals embedded in SiOxGeNy films

International Nuclear Information System (INIS)

Gao Fei; Green, Martin A.; Conibeer, Gavin; Cho, Eun-Chel; Huang Yidan; Perez-Wurfl, Ivan; Flynn, Chris

2008-01-01

Multilayered Ge nanocrystals embedded in SiO x GeN y films have been fabricated on Si substrate by a (Ge + SiO 2 )/SiO x GeN y superlattice approach, using a rf magnetron sputtering technique with a Ge + SiO 2 composite target and subsequent thermal annealing in N 2 ambient at 750 deg. C for 30 min. X-ray diffraction (XRD) measurement indicated the formation of Ge nanocrystals with an average size estimated to be 5.4 nm. Raman scattering spectra showed a peak of the Ge-Ge vibrational mode downward shifted to 299.4 cm -1 , which was caused by quantum confinement of phonons in the Ge nanocrystals. Transmission electron microscopy (TEM) revealed that Ge nanocrystals were confined in (Ge + SiO 2 ) layers. This superlattice approach significantly improved both the size uniformity of Ge nanocrystals and their uniformity of spacing on the 'Z' growth direction

Structure of 78Ge from the 76Ge(t,p)78Ge reaction

International Nuclear Information System (INIS)

Ardouin, D.; Lebrun, C.; Guilbault, F.; Remaud, B.; Vergnes, M.N.; Rotbard, G.; Kumar, K.

1978-01-01

The 76 Ge(t,p) 78 Ge reaction has been performed at a bombarding energy of 17 MeV. Thirteen excited states below 3 MeV excitation are reported with Jsup(π) values obtained by comparison to DWBA analysis. A comparison to a dynamical deformation theory is made and the results suggest 78 Ge is a transitional nucleus nearing spherical shape due to the proximity of the N-50 closed shell

On the Potential Application of the Wrinkled SiGe/SiGe Nanofilms

Czech Academy of Sciences Publication Activity Database

Fedorchenko, Alexander I.; Cheng, H. H.; Wang, W.; Ch.

2016-01-01

Roč. 6, č. 2 (2016), s. 19-23 ISSN 2160-049X Institutional support: RVO:61388998 Keywords : wrinkled SiGe nanofilms * terahertz radiation * terahertz gap Subject RIV: BE - Theoretical Physics http://www.scirp.org/journal/wjm,http://dx.doi.org/10.4236/wjm.2016.62003

Phosphorus atomic layer doping in SiGe using reduced pressure chemical vapor deposition

International Nuclear Information System (INIS)

Yamamoto, Yuji; Heinemann, Bernd; Murota, Junichi; Tillack, Bernd

2014-01-01

Phosphorus (P) atomic layer doping in SiGe is investigated at temperatures between 100 °C to 600 °C using a single wafer reduced pressure chemical vapor deposition system. SiGe(100) surface is exposed to PH 3 at different PH 3 partial pressures by interrupting SiGe growth. The impact of the SiGe buffer/cap growth condition (total pressure/SiGe deposition precursors) on P adsorption, incorporation, and segregation are investigated. In the case of SiH 4 -GeH 4 -H 2 gas system, steeper P spikes due to lower segregation are observed by SiGe cap deposition at atmospheric (ATM) pressure compared with reduced pressure (RP). The steepness of P spike of ∼ 5.7 nm/dec is obtained for ATM pressure without reducing deposition temperature. This result may be due to the shift of equilibrium of P adsorption/desorption to desorption direction by higher H 2 pressure. Using Si 2 H 6 -GeH 4 -H 2 gas system for SiGe cap deposition in RP, lowering the SiGe growth temperature is possible, resulting in higher P incorporation and steeper P profile due to reduced desorption and segregation. In the case of Si 2 H 6 -GeH 4 -H 2 gas system, the P dose could be simulated assuming a Langmuir-type kinetics model. Incorporated P shows high electrical activity, indicating P is adsorbed mostly in lattice position. - Highlights: • Phosphorus (P) atomic layer doping in SiGe (100) is investigated using CVD. • P adsorption is suppressed by the hydrogen termination of Ge surface. • By SiGe cap deposition at atmospheric pressure, P segregation was suppressed. • By using Si 2 H 6 -based SiGe cap, P segregation was also suppressed. • The P adsorption process is self-limited and follows Langmuir-type kinetics model

The Advanced Gamma-ray Imaging System (AGIS): Topological Array Trigger

Science.gov (United States)

Smith, Andrew W.

2010-03-01

AGIS is a concept for the next-generation ground-based gamma-ray observatory. It will be an array of 36 imaging atmospheric Cherenkov telescopes (IACTs) sensitive in the energy range from 50 GeV to 200 TeV. The required improvements in sensitivity, angular resolution, and reliability of operation relative to the present generation instruments imposes demanding technological and cost requirements on the design of the telescopes and on the triggering and readout systems for AGIS. To maximize the capabilities of large arrays of IACTs with a low energy threshold, a wide field of view and a low background rate, a sophisticated array trigger is required. We outline the status of the development of a stereoscopic array trigger that calculates image parameters and correlates them across a subset of telescopes. Field Programmable Gate Arrays (FPGAs) implement the real-time pattern recognition to suppress cosmic rays and night-sky background events. A proof of principle system is being developed to run at camera trigger rates up to 10MHz and array-level rates up to 10kHz.

Influence of Group-III-metal and Ag adsorption on the Ge growth on Si(111) and its vicinal surface

Energy Technology Data Exchange (ETDEWEB)

Speckmann, Moritz

2011-12-15

In the framework of this thesis the surfactant-mediated heteroepitaxial growth of Ge on different Si surfaces has been investigated by means of low-energy electron microscopy, low-energy electron diffraction, spot-profile analysing low-energy electron diffraction, X-ray standing waves, grazing-incidence X-ray diffraction, x-ray photoemission electron microscopy, X-ray photoemission spectroscopy, scanning tunneling microscopy, scanning electron microscopy, transmission electron microscopy, and density functional theory calculations. As surfactants gallium, indium, and silver were used. The adsorption of Ga or In on the intrinsically faceted Si(112) surface leads to a smoothing of the surface and the formation of (N x 1) reconstructions, where a mixture of building blocks of different sizes is always present. For both adsorbates the overall periodicity on the surface is strongly dependent on the deposition temperature and the coverage. For the experimental conditions chosen here, the periodicities are in the range of 5.2{<=}N{<=}6.5 and 3.4{<=}N{<=}3.7 for Ga and In, respectively. The (N x 1) unit cells of Ga/Si(112) and In/Si(112) are found to consist of adsorbate atoms on terrace and step-edge sites, forming two atomic chains along the [110] direction. In the Ga-induced structures two Ga-vacancies per unit cell (one in the terrace and one in the step-edge site) are found and a continuous vacancy line on the surface is formed. In the In/Si(112) structure only one vacancy per unit cell in the step-edge site exists and, thus, a continuous adsorbate chain on the terrace sites is present. The adsorption of Ga or In on Si(112) strongly influences the subsequent Ge growth. Ge deposition on the Ga-terminated Si(112) surface leads to the formation of Ge nanowires, which are elongated along the Ga chains and reach lengths of up to 2000 nm for a growth temperature of 600 C. On In-covered Si(112), both small dash-like Ge islands and triangularly shaped islands are found, where

Development of high responsivity Ge:Ga photoconductors

International Nuclear Information System (INIS)

Haegel, N.M.; Hueschen, M.R.; Haller, E.E.

1984-06-01

Czochralski-grown gallium-doped germanium (Ge:Ga) single crystal samples with a compensation of 10 -4 have been modified by the indiffusion of Cu to produce photoconductors which provide NEPs comparable to current optimum Ge:Ga detectors, but exhibit responsivities a factor of 5 to 6 times higher when tested at a background photon flux of 10 8 photons/sec at lambda=93 μm. The introduction of Cu, a triple acceptor in Ge which acts as a neutral scattering center, reduces carrier mobility and extends the breakdown field significantly in this ultra-low compensation material

Role of Oxygen in Ionic Liquid Gating on Two-Dimensional Cr2Ge2Te6: A Non-oxide Material.

Science.gov (United States)

Chen, Yangyang; Xing, Wenyu; Wang, Xirui; Shen, Bowen; Yuan, Wei; Su, Tang; Ma, Yang; Yao, Yunyan; Zhong, Jiangnan; Yun, Yu; Xie, X C; Jia, Shuang; Han, Wei

2018-01-10

Ionic liquid gating can markedly modulate a material's carrier density so as to induce metallization, superconductivity, and quantum phase transitions. One of the main issues is whether the mechanism of ionic liquid gating is an electrostatic field effect or an electrochemical effect, especially for oxide materials. Recent observation of the suppression of the ionic liquid gate-induced metallization in the presence of oxygen for oxide materials suggests the electrochemical effect. However, in more general scenarios, the role of oxygen in the ionic liquid gating effect is still unclear. Here, we perform ionic liquid gating experiments on a non-oxide material: two-dimensional ferromagnetic Cr 2 Ge 2 Te 6 . Our results demonstrate that despite the large increase of the gate leakage current in the presence of oxygen, the oxygen does not affect the ionic liquid gating effect on  the channel resistance of Cr 2 Ge 2 Te 6 devices (ionic liquid gating is more effective on the modulation of the channel resistances compared to the back gating across the 300 nm thick SiO 2 .

Oxygen transport and GeO2 stability during thermal oxidation of Ge

Science.gov (United States)

da Silva, S. R. M.; Rolim, G. K.; Soares, G. V.; Baumvol, I. J. R.; Krug, C.; Miotti, L.; Freire, F. L.; da Costa, M. E. H. M.; Radtke, C.

2012-05-01

Oxygen transport during thermal oxidation of Ge and desorption of the formed Ge oxide are investigated. Higher oxidation temperatures and lower oxygen pressures promote GeO desorption. An appreciable fraction of oxidized Ge desorbs during the growth of a GeO2 layer. The interplay between oxygen desorption and incorporation results in the exchange of O originally present in GeO2 by O from the gas phase throughout the oxide layer. This process is mediated by O vacancies generated at the GeO2/Ge interface. The formation of a substoichiometric oxide is shown to have direct relation with the GeO desorption.

Effect of ion implantation energy for the synthesis of Ge nanocrystals in SiN films with HfO2/SiO2 stack tunnel dielectrics for memory application

Directory of Open Access Journals (Sweden)

Gloux Florence

2011-01-01

Full Text Available Abstract Ge nanocrystals (Ge-NCs embedded in SiN dielectrics with HfO2/SiO2 stack tunnel dielectrics were synthesized by utilizing low-energy (≤5 keV ion implantation method followed by conventional thermal annealing at 800°C, the key variable being Ge+ ion implantation energy. Two different energies (3 and 5 keV have been chosen for the evolution of Ge-NCs, which have been found to possess significant changes in structural and chemical properties of the Ge+-implanted dielectric films, and well reflected in the charge storage properties of the Al/SiN/Ge-NC + SiN/HfO2/SiO2/Si metal-insulator-semiconductor (MIS memory structures. No Ge-NC was detected with a lower implantation energy of 3 keV at a dose of 1.5 × 1016 cm-2, whereas a well-defined 2D-array of nearly spherical and well-separated Ge-NCs within the SiN matrix was observed for the higher-energy-implanted (5 keV sample for the same implanted dose. The MIS memory structures implanted with 5 keV exhibits better charge storage and retention characteristics compared to the low-energy-implanted sample, indicating that the charge storage is predominantly in Ge-NCs in the memory capacitor. A significant memory window of 3.95 V has been observed under the low operating voltage of ± 6 V with good retention properties, indicating the feasibility of these stack structures for low operating voltage, non-volatile memory devices.

Phase diagram of the Ge-rich of the Ba–Ge system and characterisation of single-phase BaGe4

International Nuclear Information System (INIS)

Prokofieva, Violetta K.; Pavlova, Lydia M.

2014-01-01

Highlights: • The Ba-Ge phase diagram for the range 50–100 at.% Ge was constructed. • Single-phase BaGe 4 grown by the Czochralski method was characterised. • A phenomenological model for a liquid-liquid phase transition is proposed. - Abstract: The Ba–Ge binary system has been investigated by several authors, but some uncertainties remain regarding phases with Ba/Ge ⩽ 2. The goal of this work was to resolve the uncertainty about the current phase diagram of Ba–Ge by performing DTA, X-ray powder diffraction, metallographic and chemical analyses, and measurements of the electrical conductivity and viscosity. The experimental Ba–Ge phase diagram over the composition range of 50–100 at.% Ge was constructed from the cooling curves and single-phase BaGe 4 grown by the Czochralski crystal pulling method was characterised. Semiconducting BaGe 4 crystallised peritectically from the liquid phase near the eutectic. In the liquid state, the caloric effects were observed in the DTA curves at 1050 °C where there are no definite phase lines in the Ba–Ge phase diagram. These effects are confirmed by significant changes in the viscosity and electrical conductivity of a Ba–Ge alloy with eutectic composition at this temperature. A phenomenological model based on two different approaches, a phase approach and a chemical approach, is proposed to explain the isothermal liquid–liquid phase transition observed in the Ba–Ge system from the Ge side. Our results suggest that this transition is due to the peritectic reactions in the liquid phase. This reversible phase transition results in the formation of precursors of various metastable clathrate phases and is associated with sudden changes in the structure of Ba–Ge liquid alloys. Characteristics of both first- and second-order phase transitions are observed. Charge transfer appears to play an important role in this transition

Uniaxially stressed Ge:Ga and Ge:Be

Energy Technology Data Exchange (ETDEWEB)

Dubon, Jr., Oscar Danilo [Univ. of California, Berkeley, CA (United States)

1992-12-01

The application of a large uniaxial stress to p-type Ge single crystals changes the character of both the valence band and the energy levels associated with the acceptors. Changes include the splitting of the fourfold degeneracy of the valence band top and the reduction of the ionization energy of shallow acceptors. In order to study the effect of uniaxial stress on transport properties of photoexcited holes, a variable temperature photo-Hall effect system was built in which stressed Ge:Ga and Ge:Be could be characterized. Results indicate that stress increases the lifetime and Hall mobility of photoexcited holes. These observations may help further the understanding of fundamental physical processes that affect the performance of stressed Ge photoconductors including the capture of holes by shallow acceptors.

Impact of GaAs buffer thickness on electronic quality of GaAs grown on graded Ge/GeSi/Si substrates

International Nuclear Information System (INIS)

Carlin, J. A.; Ringel, S. A.; Fitzgerald, E. A.; Bulsara, M.; Keyes, B. M.

2000-01-01

Minority carrier lifetimes and interface recombination velocities for GaAs grown on a Si wafer using compositionally graded GeSi buffers have been investigated as a function of GaAs buffer thickness using monolayer-scale control of the GaAs/Ge interface nucleation during molecular beam epitaxy. The GaAs layers are free of antiphase domain disorder, with threading dislocation densities measured by etch pit density of 5x10 5 -2x10 6 cm -2 . Analysis indicates no degradation in either minority carrier lifetime or interface recombination velocity down to a GaAs buffer thickness of 0.1 μm. In fact, record high minority carrier lifetimes exceeding 10 ns have been obtained for GaAs on Si with a 0.1 μm GaAs buffer. Secondary ion mass spectroscopy reveals that cross diffusion of Ga, As, and Ge at the GaAs/Ge interface formed on the graded GeSi buffers are below detection limits in the interface region, indicating that polarity control of the GaAs/Ge interface formed on GeSi/Si substrates can be achieved. (c) 2000 American Institute of Physics

Search for the neutrinoless ββ decay in 76Ge with the GERDA experiment

International Nuclear Information System (INIS)

Cattadori, C.; Knapp, M.; Kröninger, K.; Liu, X.; Pandola, L.; Pullia, A.; Tomei, C.; Ur, C.; Zocca, F.

2011-01-01

The GERmanium Detector Array, GERDA, [Gerda Collaboration, Abt I et al., Proposal, a (http://www.mpi-hd.mpg.de/ge76/home.html)] is designed to search for neutrinoless double beta (0νββ)-decay of 76 Ge. The importance of such a search is emphasized by the evidence of a non-zero neutrino mass from flavour oscillation experiments and by the recent claim [Klapdor-Kleingrothaus H V et al., Phys. Lett. B 586, 198 (2004)] based on data of the Heidelberg-Moscow experiment. GERDA will be installed in the Hall A of the Gran Sasso underground Laboratory (LNGS), Italy. The construction of GERDA will start in 2006.

Nuclear-transparency effect in the interaction of 6.2 GeV/c negative ions and neon nuclei

International Nuclear Information System (INIS)

Kiselevich, I.L.; Mikhailichenko, V.I.; Panitkin, S.Yu.; Ponosov, A.K.; Sergeev, F.M.; Tel'nov, M.Yu.

1993-01-01

The inelastic reaction of pions with neon nuclei π - + Ne → nπ - + mπ + + kp + X (n,m,k≥1) has been studied. The initial momentum was 6.2 GeV/c. It is found that in the region of variation of the Feynman variable X F > 0 there is a correlation between the longitudinal and mean transverse momenta of the secondary particles that resembles the so-called seagull effect in πN collisions. The correlation is absent for values X F 1 this correlation disappears. The two results are in mutual agreement and indicate the existence of a region of the nucleus where its action on the secondary-particle flux is attenuated. 6 refs., 3 figs

Optical response of Cu3Ge thin films

OpenAIRE

Aboelfotoh, M. O.; Guizzetti, G.; Marabelli, F.; Pellegrino, Paolo; Sassella, A.

1996-01-01

We report an investigation on the optical properties of Cu3Ge thin films displaying very high conductivity, with thickness ranging from 200 to 2000 Å, deposited on Ge substrates. Reflectance, transmittance, and ellipsometric spectroscopy measurements were performed at room temperature in the 0.01-6.0, 0.01-0.6, and 1.4-5.0 eV energy range, respectively. The complex dielectric function, the optical conductivity, the energy-loss function, and the effective charge density were obtained over the ...

High spin levels in 66Ga, 68Ga, 70Ga and 68Ge, 70Ge, 72Ge via fusion evaporation reactions induced by α-particles

International Nuclear Information System (INIS)

Morand, C.

1979-01-01

The high spin (J 70 Ga all the members (except the 3 - one) of the (πpsub(3/2), νgsub(9/2)) configuration have been identified, in addition with the (πfsub(5/2), νgsub(9/2))sub(7 - ) and (πgsub(9/2), νgsub(9/2))sub(9 + ) states. In 66 Ga and 68 Ga most of the levels with J>7 ca be described as a result of maximum coupling of a gsub(9/2) neutron with the odd Ga core. Thus the (πgsub(9/2), νgsub(9/2))sub(9 + ) states have been safely located. In the same way the even Ge, the backbending effect at the Jsup(π)=8 + state is less and less pronouced from the 68 Ge to the 72 Ge; that can be explained by the (νgsub(9/2)) 2 sub(8 + ) configuration of this state, so that the 8 + →6 + γ-transition is more and more allowed with increasing N, i.e. as the νgsub(9/2) shell acts more and more in the lower yrast levels Jsup(π)=0 + , 2 + , 4 + , 6 + configurations [fr

GERDA, a GERmanium Detector Array for the search for neutrinoless ββ decay in 76Ge

International Nuclear Information System (INIS)

Pandola, L.; Tomei, C.

2006-01-01

The GERDA project, searching for neutrinoless double beta-decay of 76Ge with enriched germanium detectors submerged in a cryogenic bath, has been approved for installation at the Gran Sasso National Laboratory (LNGS), Italy. The GERDA technique is aiming at a dramatic reduction of the background due to radioactive contaminations of the materials surrounding the detectors. This will lead to a sensitivity of about 1026 years on the half-life of neutrinoless double beta decay. Already in the first phase of the experiment, GERDA will be able to investigate with high statistical significance the claimed evidence for neutrinoless double beta decay of 76Ge based on the data of the Heidelberg-Moscow experiment

Predictive accuracy of Edinburgh Postnatal Depression Scale assessment during pregnancy for the risk of developing postpartum depressive symptoms : a prospective cohort study

NARCIS (Netherlands)

Meijer, J. L.; Beijers, C.; van Pampus, M. G.; Verbeek, T.; Stolk, R. P.; Milgrom, J.; Bockting, C. L. H.; Burger, H.

2014-01-01

ObjectiveTo investigate whether the 10-item Edinburgh Postnatal Depression Scale (EPDS) administered antenatally is accurate in predicting postpartum depressive symptoms, and whether a two-item EPDS has similar predictive accuracy. DesignProspective cohort study. SettingObstetric care in the

Evidence for leading mesons in anti p sup 4 He reactions at 0. 6 GeV c sup -1 incident momentum

Energy Technology Data Exchange (ETDEWEB)

Balestra, F.; Bossolasco, S.; Bussa, M.P.; Busso, L.; Fava, L.; Ferrero, L.; Grasso, A.; Maggiora, A.; Panzieri, D.; Piragino, G.; Piragino, R.; Tosello, F. (Ist. di Fisica Generale ' A. Avogadro' , Univ. of Turin (Italy) INFN, Sezione di Torino (Italy)); Bendiscioli, G.; Filippini, V.; Rotondi, A.; Salvini, P.; Venaglioni, A.; Zenoni, A. (Dipt. di Fisica Nucleare e Teoria, Univ. of Pavia (Italy) INFN, Sezione di Pavia (Italy)); Batusov, Yu.; Bunyatov, S.A.; Falomkin, I.V.; Nichitiu, F.; Pontecorvo, G.B.; Rozhdestvensky, A.M.; Sapozhnikov, M.G.; Tretyak, V.I. (Joint Inst. of Nuclear Research, Dubna (USSR)); Guaraldo, C. (Lab. Nazionali di Frascati dell' INFN (Italy)); Lodi Rizzini, E. (Dipt. di Automazione Industriale, Univ. of Brescia (Italy) INFN, Sezione di Pavia (Italy)); Haatuft, A.; Halsteinslid, A.; Myklebost, K.; Olsen, J.M. (Physics Dept., Univ. of Bergen (Norway)); Breivik, F.O.; Danielsen, K.M.; Jacobsen, T.; Soerensen, S.O. (Inst. of Physics, Univ. of Oslo (Norway))

1991-01-01

Leading mesons are seen in anti p {sup 4}He {yields} neutral strange particles at 0.6 GeV c{sup -1} incident momentum. These results differ somewhat from our previous results from anti p Ne-reactions. The concept of an ''effective target'' is useless. (orig.).

Ge-Au eutectic bonding of Ge (100) single crystals

International Nuclear Information System (INIS)

Knowlton, W.B.; Beeman, J.W.; Emes, J.H.; Loretto, D.; Itoh, K.M.; Haller, E.E.

1993-01-01

The author present preliminary results on the eutectic bonding between two (100) Ge single crystal surfaces using thin films of Au ranging from 900 angstrom/surface to 300 angstrom/surface and Pd (10% the thickness of Au). Following bonding, plan view optical microscopy (OM) of the cleaved interface of samples with Au thicknesses ≤ 500 angstrom/surface show a eutectic morphology more conducive to phonon transmission through the bond interface. High resolution transmission electron microscopy (HRTEM) cross sectional interface studies of a 300 angstrom/surface Au sample show epitaxial growth of Ge. In sections of the bond, lattice continuity of the Ge is apparent through the interface. TEM studies also reveal heteroepitaxial growth of Au with a Au-Ge lattice mismatch of less than 2%. Eutectic bonds with 200 angstrom/surface Au have been attained with characterization pending. An optical polishing technique for Ge has been optimized to insure intimate contact between the Ge surfaces prior to bonding. Interferometry analysis of the optically polished Ge surface shows that surface height fluctuations lie within ±150 angstrom across an interval of lmm. Characterization of phonon transmission through the interface is discussed with respect to low temperature detection of ballistic phonons

Target and beam-target spin asymmetries in exclusive ${\pi }^{+}$ and ${\pi }^{-}$ electroproduction with 1.6- to 5.7-GeV electrons

Energy Technology Data Exchange (ETDEWEB)

Bosted, P. E.; Biselli, A. S.; Careccia, S.; Dodge, G.; Fersch, R.; Guler, N.; Kuhn, S. E.; Pierce, J.; Prok, Y.; Zheng, X.; Adhikari, K. P.; Adikaram, D.; Akbar, Z.; Amaryan, M. J.; Anefalos Pereira, S.; Asryan, G.; Avakian, H.; Badui, R. A.; Ball, J.; Baltzell, N. A.; Battaglieri, M.; Batourine, V.; Bedlinskiy, I.; Boiarinov, S.; Briscoe, W. J.; Bültmann, S.; Burkert, V. D.; Cao, T.; Carman, D. S.; Celentano, A.; Chandavar, S.; Charles, G.; Chetry, T.; Ciullo, G.; Clark, L.; Colaneri, L.; Cole, P. L.; Contalbrigo, M.; Cortes, O.; Crede, V.; D' Angelo, A.; Dashyan, N.; De Vita, R.; Deur, A.; Djalali, C.; Dupre, R.; Egiyan, H.; El Alaoui, A.; El Fassi, L.; Eugenio, P.; Fanchini, E.; Fedotov, G.; Filippi, A.; Fleming, J. A.; Forest, T. A.; Fradi, A.; Garçon, M.; Gevorgyan, N.; Ghandilyan, Y.; Gilfoyle, G. P.; Giovanetti, K. L.; Girod, F. X.; Gleason, C.; Gohn, W.; Golovatch, E.; Gothe, R. W.; Griffioen, K. A.; Guo, L.; Hafidi, K.; Hanretty, C.; Harrison, N.; Hattawy, M.; Heddle, D.; Hicks, K.; Holtrop, M.; Hughes, S. M.; Ilieva, Y.; Ireland, D. G.; Ishkhanov, B. S.; Isupov, E. L.; Jenkins, D.; Jiang, H.; Jo, H. S.; Joo, K.; Joosten, S.; Keller, D.; Khandaker, M.; Kim, W.; Klein, A.; Klein, F. J.; Kubarovsky, V.; Kuleshov, S. V.; Lanza, L.; Lenisa, P.; Livingston, K.; Lu, H. Y.; MacGregor, I. J. D.; Markov, N.; McCracken, M. E.; McKinnon, B.; Meyer, C. A.; Minehart, R.; Mirazita, M.; Mokeev, V.; Movsisyan, A.; Munevar, E.; Munoz Camacho, C.; Nadel-Turonski, P.; Net, L. A.; Ni, A.; Niccolai, S.; Niculescu, G.; Niculescu, I.; Osipenko, M.; Ostrovidov, A. I.; Paremuzyan, R.; Park, K.; Pasyuk, E.; Peng, P.; Phelps, W.; Pisano, S.; Pogorelko, O.; Price, J. W.; Procureur, S.; Protopopescu, D.; Puckett, A. J. R.; Raue, B. A.; Ripani, M.; Rizzo, A.; Rosner, G.; Rossi, P.; Roy, P.; Sabatié, F.; Salgado, C.; Schumacher, R. A.; Seder, E.; Sharabian, Y. G.; Simonyan, A.; Skorodumina, Iu.; Smith, G. D.; Sparveris, N.; Stankovic, Ivana; Stepanyan, S.; Strakovsky, I. I.; Strauch, S.; Sytnik, V.; Taiuti, M.; Tian, Ye; Torayev, B.; Ungaro, M.; Voskanyan, H.; Voutier, E.; Walford, N. K.; Watts, D. P.; Wei, X.; Weinstein, L. B.; Wood, M. H.; Zachariou, N.; Zana, L.; Zhang, J.; Zhao, Z. W.; Zonta, I.

2016-11-01

Beam-target double-spin asymmetries and target single-spin asymmetries in exclusive pi(+) and quasiexclusive pi(-) electroproduction were obtained from scattering of 1.6- to 5.7-GeV longitudinally polarized electrons from longitudinally polarized protons (for pi(+)) and deuterons (for pi(-)) using the CEBAF Large Acceptance Spectrometer (CLAS) at Jefferson Lab. The kinematic range covered is 1.1 < W < 2.6 GeV and 0.05 < Q(2) < 5 GeV2, with good angular coverage in the forward hemisphere. The asymmetry results were divided into approximately 40 000 kinematic bins for pi(+) from free protons and 15 000 bins for pi(-) production from bound nucleons in the deuteron. The present results are found to be in reasonable agreement with fits to previous world data for W < 1.7 GeV and Q(2) < 0.5 GeV2, with discrepancies increasing at higher values of Q(2), especially for W > 1.5 GeV. Very large target-spin asymmetries are observed for W > 1.6 GeV. When combined with cross-section measurements, the present results can provide powerful constraints on nucleon resonance amplitudes at moderate and large values of Q(2), for resonances with masses as high as 2.3 GeV.

2νββ decay of 76Ge into excited states with GERDA phase I

Science.gov (United States)

GERDA Collaboration; Agostini, M.; Allardt, M.; Bakalyarov, A. M.; Balata, M.; Barabanov, I.; Barros, N.; Baudis, L.; Bauer, C.; Becerici-Schmidt, N.; Bellotti, E.; Belogurov, S.; Belyaev, S. T.; Benato, G.; Bettini, A.; Bezrukov, L.; Bode, T.; Borowicz, D.; Brudanin, V.; Brugnera, R.; Budjáš, D.; Caldwell, A.; Cattadori, C.; Chernogorov, A.; D'Andrea, V.; Demidova, E. V.; di Vacri, A.; Domula, A.; Doroshkevich, E.; Egorov, V.; Falkenstein, R.; Fedorova, O.; Freund, K.; Frodyma, N.; Gangapshev, A.; Garfagnini, A.; Gooch, C.; Grabmayr, P.; Gurentsov, V.; Gusev, K.; Hegai, A.; Heisel, M.; Hemmer, S.; Heusser, G.; Hofmann, W.; Hult, M.; Inzhechik, L. V.; Janicskó Csáthy, J.; Jochum, J.; Junker, M.; Kazalov, V.; Kihm, T.; Kirpichnikov, I. V.; Kirsch, A.; Klimenko, A.; Knöpfle, K. T.; Kochetov, O.; Kornoukhov, V. N.; Kuzminov, V. V.; Laubenstein, M.; Lazzaro, A.; Lebedev, V. I.; Lehnert, B.; Liao, H. Y.; Lindner, M.; Lippi, I.; Lubashevskiy, A.; Lubsandorzhiev, B.; Lutter, G.; Macolino, C.; Majorovits, B.; Maneschg, W.; Medinaceli, E.; Mi, Y.; Misiaszek, M.; Moseev, P.; Nemchenok, I.; Palioselitis, D.; Panas, K.; Pandola, L.; Pelczar, K.; Pullia, A.; Riboldi, S.; Rumyantseva, N.; Sada, C.; Salathe, M.; Schmitt, C.; Schneider, B.; Schreiner, J.; Schulz, O.; Schwingenheuer, B.; Schönert, S.; Schütz, A.-K.; Selivanenko, O.; Shirchenko, M.; Simgen, H.; Smolnikov, A.; Stanco, L.; Stepaniuk, M.; Ur, C. A.; Vanhoefer, L.; Vasenko, A. A.; Veresnikova, A.; von Sturm, K.; Wagner, V.; Walter, M.; Wegmann, A.; Wester, T.; Wilsenach, H.; Wojcik, M.; Yanovich, E.; Zavarise, P.; Zhitnikov, I.; Zhukov, S. V.; Zinatulina, D.; Zuber, K.; Zuzel, G.

2015-11-01

Two neutrino double beta decay of {}76{Ge} to excited states of {}76{Se} has been studied using data from Phase I of the GERDA experiment. An array composed of up to 14 germanium detectors including detectors that have been isotopically enriched in {}76{Ge} was deployed in liquid argon. The analysis of various possible transitions to excited final states is based on coincidence events between pairs of detectors where a de-excitation γ ray is detected in one detector and the two electrons in the other. No signal has been observed and an event counting profile likelihood analysis has been used to determine Frequentist 90% C.L. bounds for three transitions: {0}{{g}.{{s}}.}+-{2}1+: {T}1/22ν \\gt 1.6× {10}23 yr, {0}{{g}.{{s}}.}+-{0}1+: {T}1/22ν \\gt 3.7× {10}23 yr and {0}{{g}.{{s}}.}+-{2}2+: {T}1/22ν \\gt 2.3× {10}23 yr. These bounds are more than two orders of magnitude larger than those reported previously. Bayesian 90% credibility bounds were extracted and used to exclude several models for the {0}{{g}.{{s}}.}+-{0}1+ transition.

Energy levels of germanium, Ge I through Ge XXXII

International Nuclear Information System (INIS)

Sugar, J.; Musgrove, A.

1993-01-01

Atomic energy levels of germanium have been compiled for all stages of ionization for which experimental data are available. No data have yet been published for Ge VIII through Ge XIII and Ge XXXII. Very accurate calculated values are compiled for Ge XXXI and XXXII. Experimental g-factors and leading percentages from calculated eigenvectors of levels are given. A value for the ionization energy, either experimental when available or theoretical, is included for the neutral atom and each ion. section

R{sub 4}Ir{sub 13}Ge{sub 9} (R=La, Ce, Pr, Nd, Sm) and RIr{sub 3}Ge{sub 2} (R=La, Ce, Pr, Nd): Crystal structures with nets of Ir atoms

Energy Technology Data Exchange (ETDEWEB)

Yarema, Maksym [Department of Inorganic Chemistry, Ivan Franko National University of Lviv, Kyryla i Mefodiya Str, 6, UA-79005 Lviv (Ukraine); Swiss Federal Laboratories for Materials Science and Technology (EMPA), Ueberlandstr. 129, CH-8600 Duebendorf (Switzerland); Zaremba, Oksana; Gladyshevskii, Roman [Department of Inorganic Chemistry, Ivan Franko National University of Lviv, Kyryla i Mefodiya Str, 6, UA-79005 Lviv (Ukraine); Hlukhyy, Viktor, E-mail: viktor.hlukhyy@lrz.tu-muenchen.de [Department Chemie, Technische Universitaet Muenchen, Lichtenbergstr. 4, D-85747 Garching (Germany); Faessler, Thomas F. [Department Chemie, Technische Universitaet Muenchen, Lichtenbergstr. 4, D-85747 Garching (Germany)

2012-12-15

The crystal structures of the new ternary compounds Sm{sub 4}Ir{sub 13}Ge{sub 9} and LaIr{sub 3}Ge{sub 2} were determined and refined on the basis of single-crystal X-ray diffraction data. They belong to the Ho{sub 4}Ir{sub 13}Ge{sub 9} (oP52, Pmmn) and CeCo{sub 3}B{sub 2} (hP5, P6/mmm) structure types, respectively. The formation of isotypic compounds R{sub 4}Ir{sub 13}Ge{sub 9} with R=La, Ce, Pr, Nd, and RIr{sub 3}Ge{sub 2} with R=Ce, Pr, Nd, was established by powder X-ray diffraction. The RIr{sub 3}Ge{sub 2} (R=La, Ce, Pr, Nd) compounds exist only in as-cast samples and decompose during annealing at 800 Degree-Sign C with the formation of R{sub 4}Ir{sub 13}Ge{sub 9}. The structure of Sm{sub 4}Ir{sub 13}Ge{sub 9} contains intersecting, slightly puckered nets of Ir atoms (4{sup 4})(4{sup 3}.6){sub 2}(4.6{sup 2}){sub 2} and (4{sup 4}){sub 2}(4{sup 3}.6){sub 4}(4.6{sup 2}){sub 2} that are perpendicular to [0 1 1] as well as to [0 -1 1] and [0 0 1]. The Ir atoms are surrounded by Ge atoms that form tetrahedra or square pyramids (where the layers intersect). The Sm and additional Ir atoms (in trigonal-planar coordination) are situated in channels along [1 0 0] (short translation vector). In the structure of LaIr{sub 3}Ge{sub 2} the Ir atoms form planar Kagome nets (3.6.3.6) perpendicular to [0 0 1]. These nets alternate along the short translation vector with layers of La and Ge atoms. - Graphical abstract: The crystal structures contain the nets of Ir atoms as main structural motif: R{sub 4}Ir{sub 13}Ge{sub 9} contains intersecting slightly puckered nets of Ir atoms, whereas in the structure of RIr{sub 3}Ge{sub 2} the Ir atoms form planar Kagome nets. Highlights: Black-Right-Pointing-Pointer The Ir-rich ternary germanides R{sub 4}Ir{sub 13}Ge{sub 9} (R=La, Ce, Pr, Nd, Sm) and RIr{sub 3}Ge{sub 2} (R=La, Ce, Pr, Nd) have been synthesized. Black-Right-Pointing-Pointer The RIr{sub 3}Ge{sub 2} compounds exist only in as-cast samples and decompose during annealing at 800

Stress-Induced Crystallization of Ge-Doped Sb Phase-Change Thin Films

NARCIS (Netherlands)

Eising, Gert; Pauza, Andrew; Kooi, Bart J.

The large effects of moderate stresses on the crystal growth rate in Ge-doped Sb phase-change thin films are demonstrated using direct optical imaging. For Ge6Sb94 and Ge7Sb93 phase-change films, a large increase in crystallization temperature is found when using a polycarbonate substrate instead of

Monolithic integration of a silica AWG and Ge photodiodes on Si photonic platform for one-chip WDM receiver.

Science.gov (United States)

Nishi, Hidetaka; Tsuchizawa, Tai; Kou, Rai; Shinojima, Hiroyuki; Yamada, Takashi; Kimura, Hideaki; Ishikawa, Yasuhiko; Wada, Kazumi; Yamada, Koji

2012-04-09

On the silicon (Si) photonic platform, we monolithically integrated a silica-based arrayed-waveguide grating (AWG) and germanium (Ge) photodiodes (PDs) using low-temperature fabrication technology. We confirmed demultiplexing by the AWG, optical-electrical signal conversion by Ge PDs, and high-speed signal detection at all channels. In addition, we mounted a multichannel transimpedance amplifier/limiting amplifier (TIA/LA) circuit on the fabricated AWG-PD device using flip-chip bonding technology. The results show the promising potential of our Si photonic platform as a photonics-electronics convergence.

P/N InP solar cells on Ge wafers

Science.gov (United States)

Wojtczuk, Steven; Vernon, Stanley; Burke, Edward A.

1994-01-01

Indium phosphide (InP) P-on-N one-sun solar cells were epitaxially grown using a metalorganic chemical vapor deposition process on germanium (Ge) wafers. The motivation for this work is to replace expensive InP wafers, which are fragile and must be thick and therefore heavy, with less expensive Ge wafers, which are stronger, allowing use of thinner, lighter weight wafers. An intermediate InxGs1-xP grading layer starting as In(0.49)Ga(0.51) at the GaAs-coated Ge wafer surface and ending as InP at the top of the grading layer (backside of the InP cell) was used to attempt to bend some of the threading dislocations generated by lattice-mismatch between the Ge wafer and InP cell so they would be harmlessly confined in this grading layer. The best InP/Ge cell was independently measured by NASA-Lewis with a one-sun 25 C AMO efficiently measured by NASA-Lewis with a one-circuit photocurrent 22.6 mA/sq cm. We believe this is the first published report of an InP cell grown on a Ge wafer. Why get excited over a 9 percent InP/Ge cell? If we look at the cell weight and efficiency, a 9 percent InP cell on an 8 mil Ge wafer has about the same cell power density, 118 W/kg (BOL), as the best InP cell ever made, a 19 percent InP cell on an 18 mil InP wafer, because of the lighter Ge wafer weight. As cell panel materials become lighter, the cell weight becomes more important, and the advantage of lightweight cells to the panel power density becomes more important. In addition, although InP/Ge cells have a low beginning-of-life (BOL) efficiency due to dislocation defects, the InP/Ge cells are very radiation hard (end-of-life power similar to beginning-of-life). We have irradiated an InP/Ge cell with alpha particles to an equivalent fluence of 1.6 x 10(exp 16) 1 MeV electrons/sq cm and the efficiency is still 83 percent of its BOL value. At this fluence level, the power output of these InP/Ge cells matches the GaAs/Ge cell data tabulated in the JPL handbook. Data are presented

Precise Extraction of the Neutron Magnetic Form Factor from Quasi-elastic 3He(pol)(e(pol),e') at Q2 = 0.1-0.6 (GeV/c)2

International Nuclear Information System (INIS)

Jens-ole Hansen; Brian Anderson; Leonard Auerbach; Todd Averett; William Bertozzi; Tim Black; John Calarco; Lawrence Cardman; Gordon Cates; Zhengwei Chai; Jiang-Ping Chen; Seonho Choi; Eugene Chudakov; Steve Churchwell; G Corrado; Christopher Crawford; Daniel Dale; Alexandre Deur; Pibero Djawotho; Dipangkar Dutta; John Finn; Haiyan Gao; Ronald Gilman; Oleksandr Glamazdin; Charles Glashausser; Walter Gloeckle; Jacek Golak; Javier Gomez; Viktor Gorbenko; F. Hersman; Douglas Higinbotham; Richard Holmes; Calvin Howell; Emlyn Hughes; Thomas Humensky; Sebastien Incerti; Piotr Zolnierczuk; Cornelis De Jager; John Jensen; Xiaodong Jiang; Cathleen Jones; Mark Jones; R Kahl; H Kamada; A Kievsky; Ioannis Kominis; Wolfgang Korsch; Kevin Kramer; Gerfried Kumbartzki; Michael Kuss; Enkeleida Lakuriqi; Meihua Liang; Nilanga Liyanage; John LeRose; Sergey Malov; Demetrius Margaziotis; Jeffery Martin; Kathy McCormick; Robert McKeown; Kevin McIlhany; Zein-Eddine Meziani; Robert Michaels; Greg Miller; Joseph Mitchell; Sirish Nanda; Emanuele Pace; Tina Pavlin; Gerassimos Petratos; Roman Pomatsalyuk; David Pripstein; David Prout; Ronald Ransome; Yves Roblin; Marat Rvachev; Giovanni Salme; Michael Schnee; Charles Seely; Taeksu Shin; Karl Slifer; Paul Souder; Steffen Strauch; Riad Suleiman; Mark Sutter; Bryan Tipton; Luminita Todor; M Viviani; Branislav Vlahovic; John Watson; Claude Williamson; H Witala; Bogdan Wojtsekhowski; Feng Xiong; Wang Xu; Jen-chuan Yeh

2006-01-01

We have measured the transverse asymmetry A T' in the quasi-elastic 3 /rvec He/(/rvec e/,e') process with high precision at Q 2 -values from 0.1 to 0.6 (GeV/c) 2 . The neutron magnetic form factor G M n was extracted at Q 2 -values of 0.1 and 0.2 (GeV/c) 2 using a non-relativistic Faddeev calculation which includes both final-state interactions (FSI) and meson-exchange currents (MEC). Theoretical uncertainties due to the FSI and MEC effects were constrained with a precision measurement of the spin-dependent asymmetry in the threshold region of 3 /rvec He/(/rvec e/,e'). We also extracted the neutron magnetic form factor G M n at Q 2 -values of 0.3 to 0.6 (GeV/c) 2 based on Plane Wave Impulse Approximation calculations

Analog 65/130 nm CMOS 5 GHz Sub-Arrays with ROACH-2 FPGA Beamformers for Hybrid Aperture-Array Receivers

Science.gov (United States)

2017-03-20

factor, where c is the wave speed . Proposed two-level hybrid beamforming architecture consists of an analog sub-array at level-1 (L-element analog...gigabit transceivers, to support 4x10Ge links (SFP+) for high- speed communication. ROACH-2 also supports two ZDOk+ interfaces supporting high speed ADCs...antenna systems with hybrid analog and digital beamforming for millimeter wave 5G ,” IEEE Communications Magazine, vol. 53, no. 1, pp. 186–194, January

Single pion and several pions production in {pi}{sup +}p interactions at 1.6 GeV/c; Creation d'un et plusieurs mesons {pi} dans les interactions {pi}{sup +} p a 1,6 GeV/c

Energy Technology Data Exchange (ETDEWEB)

Jabiol, M A [Commissariat a l' Energie Atomique, Centre d' Etudes Nucleaires de Saclay, 91 - Gif-sur-Yvette (France)

1966-07-01

The production of {rho}{sup +}, N{sub 33}{sup *}, and {eta}{sup 0} was observed in {pi}{sup +}p interactions at 1.6 GeV/c. In the reactions where one pion is created, the comparison between the experimental distribution of the {rho}{sup +} and the N{sub 33}{sup *} with the predictions of the peripheral model modified by absorption effects permits the conclusion that the contribution of this model is important, but that other effects such as interferences between {rho}{sup +} and N{sub 33}{sup *} are not negligible. In the reactions where several pions are created, the branching ratios of some decay modes of {eta}0 are evaluated and the associated production of {eta}{sup 0} and N{sub 33}{sup *} is observed. (author) [French] La production des resonances {rho}{sup +}, N{sub 33}{sup *} et {eta}{sup 0} a ete observee dans les interactions {pi}{sup +}p a 1,6 GeV/c. Dans les reactions ou un seul meson {pi} est cree, la comparaison des distributions experimentales relatives au meson {rho}{sup +} et a l'isobare N{sub 33}{sup *} aux previsions du modele peripherique modifie par les effets d'absorption, permet d'affirmer que la contribution de ce modele est importante, mais que des effets tels que les interferences entre les processus de creation du {rho}{sup +} et de N{sub 33}{sup *} ne sont pas negligeables. Dans les reactions ou plusieurs mesons {pi} sont crees, les rapports de branchement de certains modes de desintegration du meson {eta}{sup 0} ont pu etre evalues et la production associee du {eta}{sup 0} et de N{sub 33}{sup *} a ete observee. (auteur)

Results on decay with emission of two neutrinos or Majorons in Ge from GERDA Phase I

Science.gov (United States)

Agostini, M.; Allardt, M.; Bakalyarov, A. M.; Balata, M.; Barabanov, I.; Barros, N.; Baudis, L.; Bauer, C.; Becerici-Schmidt, N.; Bellotti, E.; Belogurov, S.; Belyaev, S. T.; Benato, G.; Bettini, A.; Bezrukov, L.; Bode, T.; Borowicz, D.; Brudanin, V.; Brugnera, R.; Budjáš, D.; Caldwell, A.; Cattadori, C.; Chernogorov, A.; D'Andrea, V.; Demidova, E. V.; di Vacri, A.; Domula, A.; Doroshkevich, E.; Egorov, V.; Falkenstein, R.; Fedorova, O.; Freund, K.; Frodyma, N.; Gangapshev, A.; Garfagnini, A.; Grabmayr, P.; Gurentsov, V.; Gusev, K.; Hegai, A.; Heisel, M.; Hemmer, S.; Heusser, G.; Hofmann, W.; Hult, M.; Inzhechik, L. V.; Csáthy, J. Janicskó; Jochum, J.; Junker, M.; Kazalov, V.; Kihm, T.; Kirpichnikov, I. V.; Kirsch, A.; Klimenko, A.; Knöpfle, K. T.; Kochetov, O.; Kornoukhov, V. N.; Kuzminov, V. V.; Laubenstein, M.; Lazzaro, A.; Lebedev, V. I.; Lehnert, B.; Liao, H. Y.; Lindner, M.; Lippi, I.; Lubashevskiy, A.; Lubsandorzhiev, B.; Lutter, G.; Macolino, C.; Majorovits, B.; Maneschg, W.; Medinaceli, E.; Misiaszek, M.; Moseev, P.; Nemchenok, I.; Palioselitis, D.; Panas, K.; Pandola, L.; Pelczar, K.; Pullia, A.; Riboldi, S.; Rumyantseva, N.; Sada, C.; Salathe, M.; Schmitt, C.; Schneider, B.; Schönert, S.; Schreiner, J.; Schütz, A.-K.; Schulz, O.; Schwingenheuer, B.; Selivanenko, O.; Shirchenko, M.; Simgen, H.; Smolnikov, A.; Stanco, L.; Stepaniuk, M.; Ur, C. A.; Vanhoefer, L.; Vasenko, A. A.; Veresnikova, A.; von Sturm, K.; Wagner, V.; Walter, M.; Wegmann, A.; Wester, T.; Wilsenach, H.; Wojcik, M.; Yanovich, E.; Zavarise, P.; Zhitnikov, I.; Zhukov, S. V.; Zinatulina, D.; Zuber, K.; Zuzel, G.

2015-09-01

A search for neutrinoless decay processes accompanied with Majoron emission has been performed using data collected during Phase I of the GERmanium Detector Array (GERDA) experiment at the Laboratori Nazionali del Gran Sasso of INFN (Italy). Processes with spectral indices were searched for. No signals were found and lower limits of the order of 10 yr on their half-lives were derived, yielding substantially improved results compared to previous experiments with Ge. A new result for the half-life of the neutrino-accompanied decay of Ge with significantly reduced uncertainties is also given, resulting in yr.

Synthesis and structure of Li{sub 4}GeS{sub 4}

Energy Technology Data Exchange (ETDEWEB)

Matsushita, Y [National Inst. of Materials and Chemical Research, Tsukuba (Japan). High Pressure Lab.; Kanatzidis, M G [Michigan State Univ., East Lansing, MI (United States). Dept. of Chemistry

1998-01-01

The compound Li{sub 4}GeS{sub 4} has been prepared as transparent, light yellow moisture-sensitive crystals. Li{sub 4}GeS{sub 4} belongs to the space group Pnma with a = 14.107(6) A, b = 7.770(3) A and c = 6.162(2) A. The crystal structure was solved by direct-methods. The final R and R{sub w}-values are 1.85 and 1.65% for 866 observed reflections. The Li{sub 4}GeS{sub 4} structure has three crystallographically independent lithium sites and one germanium site. The lithium atoms adopt two different coordination types. The Li1 atom is coordinated to five sulfur atoms in a square pyramidal geometry, while the Li2 and Li3 atoms have distorted tetrahedral coordination. The Ge atom is tetrahedrally coordinated by four sulfur atoms and is found as [GeS{sub 4}]{sup 4-} units. The anisotropic three-dimensional crystal structure of Li{sub 4}GeS{sub 4} is described. (orig.) 57 refs.

Hadron production by e+e- annihilation at center-of-mass energies between 2.6 and 7.8 GeV. I. Total cross section, multiplicities, and inclusive momentum distributions

International Nuclear Information System (INIS)

Siegrist, J.L.; Schwitters, R.F.; Alam, M.S.; Boyarski, A.M.; Breidenbach, M.; Bulos, F.; Dakin, J.T.; Dorfan, J.M.; Feldman, G.J.; Fryberger, D.; Hanson, G.; Jaros, J.A.; Jean-Marie, B.; Larsen, R.R.; Lueth, V.; Lynch, H.L.; Lyon, D.; Morehouse, C.C.; Perl, M.L.; Peruzzi, I.; Piccolo, M.; Pun, T.P.; Rapidis, P.; Richter, B.; Schindler, R.H.; Tanenbaum, W.; Vannucci, F.; Chinowsky, W.; Abrams, G.S.; Briggs, D.; Carithers, W.C.; Cooper, S.; DeVoe, R.G.; Friedberg, C.E.; Goldhaber, G.; Hollebeek, R.J.; Johnson, A.D.; Kadyk, J.A.; Litke, A.M.; Madaras, R.J.; Nguyen, H.K.; Pierre, F.M.; Sadoulet, B.; Trilling, G.H.; Whitaker, J.S.; Wiss, J.E.

1982-01-01

Measurements of multihadron production in e + e - annihilation at center-of-mass energies between 2.6 and 7.8 GeV are presented. Aside from the narrow resonances psi(3095) and psi(3684), the total hadronic cross section is found to be approximately 2.7 times the cross section for the production of muon pairs at c.m. energies below 3.7 GeV and 4.3 times the muon-pair cross section at c.m. energies above 5.5 GeV. Complicated structure is found at intermediate energies. Charged-particle multiplicities and inclusive momentum distributions are presented

Interactions of secondary particles with thorium samples in the setup QUINTA irradiated with 6 GeV deuterons

Energy Technology Data Exchange (ETDEWEB)

Khushvaktov, J., E-mail: khushvaktov@jinr.ru [Joint Institute for Nuclear Research, Dubna (Russian Federation); Institute of Nuclear Physics ASRU, Tashkent (Uzbekistan); Adam, J. [Joint Institute for Nuclear Research, Dubna (Russian Federation); Nuclear Physics Institute ASCR PRI (Czech Republic); Baldin, A.A. [Joint Institute for Nuclear Research, Dubna (Russian Federation); Institute for Advanced Studies “OMEGA”, Dubna (Russian Federation); Chilap, V.V. [Center of Physical and Technical Projects “Atomenergomash”, Moscow (Russian Federation); Furman, V.I.; Sagimbaeva, F.; Solnyshkin, A.A.; Stegailov, V.I.; Tichy, P.; Tsoupko-Sitnikov, V.M.; Tyutyunnikov, S.I.; Vespalec, R. [Joint Institute for Nuclear Research, Dubna (Russian Federation); Vrzalova, J. [Joint Institute for Nuclear Research, Dubna (Russian Federation); Nuclear Physics Institute ASCR PRI (Czech Republic); Yuldashev, B.S. [Joint Institute for Nuclear Research, Dubna (Russian Federation); Institute of Nuclear Physics ASRU, Tashkent (Uzbekistan); Wagner, V. [Nuclear Physics Institute ASCR PRI (Czech Republic); Zavorka, L.; Zeman, M. [Joint Institute for Nuclear Research, Dubna (Russian Federation)

2016-08-15

The natural uranium assembly, QUINTA, was irradiated with 6 GeV deuterons. The {sup 232}Th samples were placed at the central axis of the setup QUINTA. The spectra of gamma rays emitted by the activated {sup 232}Th samples have been analysed and more than one hundred nuclei produced have been identified. For each of those products, reaction rates have been determined. The ratio of the weight of produced {sup 233}U to {sup 232}Th is presented. Experimental results were compared with the results of Monte Carlo simulations by FLUKA code.

Anisotropic magnetic phase diagram of Kondo-Lattice compound Ce3Pd20Ge6 with quadrupolar ordering

International Nuclear Information System (INIS)

Kitagawa, Jiro; Takeda, Naoya; Ishikawa, Masayasu; Yoshida, Toshiya; Ishiguro, Akiko; Kimura, Noriaki; Komatsubara, Takemi

1999-01-01

We have measured the specific heat and the electrical resistivity of Ce 3 Pd 20 Ge 6 in magnetic fields up to 4T applied along three principal directions. The compound shows the large negative magnetoresistance in the quadrupolar phase. The coefficient of the electronic specific heat and T 2 -coefficient of the electrical resistivity are considerably reduced at 4T. The magnetic phase diagram constructed from these measurements suggests the existence of a highly anisotropic interaction between the electric quadrupolar moments and the magnetic dipolar moments. (author)

Interactions of secondary particles with thorium samples in the setup QUINTA irradiated with 6-GeV deuterons

International Nuclear Information System (INIS)

Khushvaktov, J.H.; Yuldashev, B.S.; Adam, J.; Vrzalova, J.; Baldin, A.A.; Chilap, V.V.; Furman, V.I.; Sagimbaeva, F.; Solnyshkin, A.A.; Stegailov, V.I.; Tichy, P.; Tsoupko-Sitnikov, V.M.; Tyutyunnikov, S.I.; Vespalec, R.; Zavorka, L.; Wagner, V.; Zeman, M.

2016-01-01

The natural uranium assembly, QUINTA, was irradiated with 6-GeV deuterons. The 232 Th samples were placed at the central axis of the setup QUINTA. The spectra of gamma rays emitted by the activated 232 Th samples have been analysed, and more than one hundred nuclei produced have been identified. For each of those products, reaction rates have been determined. The ratio of the weight of produced 233 U to that of 232 Th is presented. Experimental results were compared with the results of Monte Carlo simulations by the FLUKA code. [ru

Bose-Einstein correlations in Si + Al and Si + Au collisions at 14.6A GeV/c

Science.gov (United States)

Abbott, T.; Akiba, Y.; Beavis, D.; Bloomer, M. A.; Bond, P. D.; Chasman, C.; Chen, Z.; Chu, Y. Y.; Cole, B. A.; Costales, J. B.

1992-01-01

The E802 Spectrometer at the Brookhaven Alternating Gradient Synchrotron has been used to measure the correlation in relative momentum between like-sign pions emitted in central Si + Al and Si + Au collisions at 14.6A GeV/c. Data are presented in terms of the correlation function for both identified pi(-) and pi(+) pairs near the nucleon-nucleon center-of-mass rapidity. All parametrizations of the correlation function are consistent with a spherically symmetric source of rms radius 3.5 +/- 0.4 fm and lifetime fm/c.

Evaluation of the Edinburgh Post Natal Depression Scale using Rasch analysis

Directory of Open Access Journals (Sweden)

Tennant Alan

2006-06-01

Full Text Available Abstract Background The Edinburgh Postnatal Depression Scale (EPDS is a 10 item self-rating post-natal depression scale which has seen widespread use in epidemiological and clinical studies. Concern has been raised over the validity of the EPDS as a single summed scale, with suggestions that it measures two separate aspects, one of depressive feelings, the other of anxiety. Methods As part of a larger cross-sectional study conducted in Melbourne, Australia, a community sample (324 women, ranging in age from 18 to 44 years: mean = 32 yrs, SD = 4.6, was obtained by inviting primiparous women to participate voluntarily in this study. Data from the EPDS were fitted to the Rasch measurement model and tested for appropriate category ordering, for item bias through Differential Item Functioning (DIF analysis, and for unidimensionality through tests of the assumption of local independence. Results Rasch analysis of the data from the ten item scale initially demonstrated a lack of fit to the model with a significant Item-Trait Interaction total chi-square (chi Square = 82.8, df = 40; p Conclusion The results of this study suggest that EPDS, in its original 10 item form, is not a viable scale for the unidimensional measurement of depression. Rasch analysis suggests that a revised eight item version (EPDS-8 would provide a more psychometrically robust scale. The revised cut points of 7/8 and 9/10 for the EPDS-8 show high levels of agreement with the original case identification for the EPDS-10.

An investigation of narrow meson resonance production in antiproton-proton and antiproton-neutron interactions at 6.1 and 8.9 GeV/c

International Nuclear Information System (INIS)

Azooz, F.; Butterworth, I.; Dornan, P.J.; Hall, G.; Stern, R.A.; White, A.P.; Brown, R.C.; Butler, N.; Gopal, G.P.; McPherson, A.; Sekulin, R.L.; Brau, J.E.; Carroll, J.T.; Chaloupka, V.; Cautis, C.V.; Dumont, J.J.; Ericson, R.A.; Field, R.C.; Freytag, D.R.; Grandpeix, J.Y.; Kitagaki, T.; Tanaka, S.; Yuta, H.; Abe, K.; Hasegawa, K.; Yamaguchi, A.; Tamai, K.; Takanashi, H.; Mann, W.A.; Schneps, J.; Wald, H.B.

1984-01-01

We have made a comprehensive search for narrow meson resonance production in reactions of the type anti pN->πsub(fast)sup(+-)X and anti pN->psub(fast)X at 6.1 and 8.9 Gev/c in a triggered bubble chamber experiment at the SLAC hybrid facility. From a study of all accessible inclusive, semi-inclusive and exclusive states we give upper limits for production of non-strange resonances with width 2 . In a previous publication [1] we gave evidence for production of a narrow state of mass 2.02 GeV/c 2 , coupled to Nanti N, in our data. In the present study we find two further peaks of statistical significance in excess of 4 standard deviations with masses in the Mproportional2 GeV/c 2 region, and one further multipion peak with mass proportional1.54 GeV/c 2 , all of which merit further experimental investigation. (orig.)

Shower development of particles with momenta from 15 GeV to 150 GeV in the CALICE scintillator-tungsten hadronic calorimeter

CERN Document Server

Chefdeville, M.; Repond, J.; Schlereth, J.; Xia, L.; Eigen, G.; Marshall, J.S.; Thomson, M.A.; Ward, D.R.; Alipour Tehrani, N.; Apostolakis, J.; Dannheim, D.; Elsener, K.; Folger, G.; Grefe, C.; Ivantchenko, V.; Killenberg, M.; Klempt, W.; van der Kraaij, E.; Linssen, L.; Lucaci-Timoce, A.-I.; Münnich, A.; Poss, S.; Ribon, A.; Roloff, P.; Sailer, A.; Schlatter, D.; Sicking, E.; Strube, J.; Uzhinskiy, V.; Chang, S.; Khan, A.; Kim, D.H.; Kong, D.J.; Oh, Y.D.; Blazey, G.C.; Dyshkant, A.; Francis, K.; Zutshi, V.; Giraud, J.; Grondin, D.; Hostachy, J.-Y.; Brianne, E.; Cornett, U.; David, D.; Falley, G.; Gadow, K.; Göttlicher, P.; Günter, C.; Hartbrich, O.; Hermberg, B.; Irles, A.; Karstensen, S.; Krivan, F.; Krüger, K.; Kvasnicka, J.; Lu, S.; Lutz, B.; Morozov, S.; Morgunov, V.; Neubüser, C.; Provenza, A.; Reinecke, M.; Sefkow, F.; Smirnov, P.; Terwort, M.; Tran, H.L.; Vargas-Trevino, A.; Garutti, E.; Laurien, S.; Matysek, M.; Ramilli, M.; Schröder, S.; Briggl, K.; Eckert, P.; Harion, T.; Munwes, Y.; Schultz-Coulon, H. -Ch.; Shen, W.; Stamen, R.; Bilki, B.; Onel, Y.; Kawagoe, K.; Hirai, H.; Sudo, Y.; Suehara, T.; Sumida, H.; Takada, S.; Tomita, T.; Yoshioka, T.; Wing, M.; Calvo Alamillo, E.; Fouz, M. -C.; Marin, J.; Puerta-Pelayo, J.; Verdugo, A.; Bobchenko, B.; Chadeeva, M.; Danilov, M.; Markin, O.; Mizuk, R.; Novikov, E.; Rusinov, V.; Tarkovsky, E.; Kirikova, N.; Kozlov, V.; Smirnov, P.; Soloviev, Y.; Besson, D.; Buzhan, P.; Popova, E.; Gabriel, M.; Kiesling, C.; van der Kolk, N.; Seidel, K.; Simon, F.; Soldner, C.; Szalay, M.; Tesar, M.; Weuste, L.; Amjad, M.S.; Bonis, J.; Cornebise, P.; Richard, F.; Pöschl, R.; Rouëné, J.; Thiebault, A.; Anduze, M.; Balagura, V.; Boudry, V.; Brient, J-C.; Cizel, J-B.; Cornat, R.; Frotin, M.; Gastaldi, F.; Haddad, Y.; Magniette, F.; Nanni, J.; Pavy, S.; Rubio-Roy, M.; Shpak, K.; Tran, T.H.; Videau, H.; Yu, D.; Callier, S.; Conforti di Lorenzo, S.; Dulucq, F.; Fleury, J.; Martin-Chassard, G.; de la Taille, Ch.; Raux, L.; Seguin-Moreau, N.; Cvach, J.; Gallus, P.; Havranek, M.; Janata, M.; Kovalcuk, M.; Lednicky, D.; Marcisovsky, M.; Polak, I.; Popule, J.; Tomasek, L.; Tomasek, M.; Ruzicka, P.; Sicho, P.; Smolik, J.; Vrba, V.; Zalesak, J.; Ieki, S.; Kamiya, Y.; Ootani, W.; Shibata, N.; Chen, S.; Jeans, D.; Komamiya, S.; Kozakai, C.; Nakanishi, H.; Götze, M.; Sauer, J.; Weber, S.; Zeitnitz, C.

2015-12-10

We present a study of showers initiated by electrons, pions, kaons, and protons with momenta from 15 GeV to 150 GeV in the highly granular CALICE analogue scintillator-tungsten hadronic calorimeter. The data were recorded at the CERN Super Proton Synchrotron in 2011. The analysis includes measurements of the calorimeter response to each particle type as well as measurements of the energy resolution and studies of the longitudinal and radial shower development for selected particles. The results are compared to Geant4 simulations (version 9.6.p02). In the study of the energy resolution we include previously published data with beam momenta from 1 GeV to 10 GeV recorded at the CERN Proton Synchrotron in 2010.

Carrier recombination in tailored multilayer Si/Si{sub 1−x}Ge{sub x} nanostructures

Energy Technology Data Exchange (ETDEWEB)

Mala, S.A. [Department of Electrical and Computer Engineering, New Jersey Institute of Technology, Newark, NJ 07102 (United States); Tsybeskov, L., E-mail: tsybesko@njit.edu [Department of Electrical and Computer Engineering, New Jersey Institute of Technology, Newark, NJ 07102 (United States); Lockwood, D.J.; Wu, X.; Baribeau, J.-M. [National Research Council, Ottawa, ON, Canada KIA 0R6 (Canada)

2014-11-15

Photoluminescence (PL) measurements were performed in Si/Si{sub 1−x}Ge{sub x} nanostructures with a single Si{sub 0.92}Ge{sub 0.08} nanometer-thick layer incorporated into Si/Si{sub 0.6}Ge{sub 0.4} cluster multilayers. Under pulsed laser excitation, the PL decay associated with the Si{sub 0.92}Ge{sub 0.08} nano-layer is found to be nearly a 1000 times faster compared to that in Si/Si{sub 0.6}Ge{sub 0.4} cluster multilayers. A model considering Si/SiGe hetero-interface composition and explaining the fast and slow time-dependent recombination rates is proposed.

Optical and structural investigations of self-assembled Ge/Si bi-layer containing Ge QDs

Energy Technology Data Exchange (ETDEWEB)

Samavati, Alireza, E-mail: alireza.samavati@yahoo.com [Ibn Sina Institute for Fundamental Science Studies, Universiti Teknologi Malaysia, Skudai 81310, Johor (Malaysia); Othaman, Z., E-mail: zulothaman@gmail.com [Ibn Sina Institute for Fundamental Science Studies, Universiti Teknologi Malaysia, Skudai 81310, Johor (Malaysia); Ghoshal, S.K.; Dousti, M.R. [Advanced Optical Material Research Group, Department of Physics, Faculty of Science, Universiti Teknologi Malaysia, 81310 UTM Skudai, Johor (Malaysia)

2014-10-15

We report the influence of Si spacer thickness variation (10–40 nm) on structural and optical properties of Ge quantum dots (QDs) in Ge/Si(1 0 0) bi-layer grown by radio frequency magnetron sputtering. AFM images reveal the spacer dependent width, height, root mean square roughness and number density of QDs vary in the range of ∼12–25 nm, ∼2–6 nm, ∼1.95–1.05 nm and ∼0.55×10{sup 11}–2.1×10{sup 11} cm{sup −2}, respectively. XRD patterns exhibit the presence of poly-oriented structures of Ge with preferred growth along (1 1 1) direction accompanied by a reduction in strain from 4.9% to 1.2% (estimated from Williamson–Hall plot) due to bi-layering. The room temperature luminescence displays strong blue–violet peak associated with a blue shift as much as 0.05 eV upon increasing the thickness of Si spacer. This shift is attributed to the quantum size effect, the material intermixing and the strain mediation. Raman spectra for both mono and bi-layer samples show intense Ge–Ge optical phonon mode that is shifted towards higher frequency. Furthermore, the first order features of Raman spectra affirm the occurrence of interfacial intermixing and phase formation during deposition. The excellent features of the results suggest that our systematic method may constitute a basis for the tunable growth of Ge QDs suitable in nanophotonics. - Highlights: • High quality bilayered hetero-structure Ge/Si using economic and easy rf magnetron sputtering fabrication method. • The role of phonon-confinement and strain relaxation mechanisms. • Influence of bilayering on evolutionary growth dynamics. • Band gap shift of visible PL upon bilayering.

Hadron correlations in nuclear reactions with production of cumulative protons induced by π- mesons with momentum of 6.0 GeV/c

International Nuclear Information System (INIS)

Bayukov, Yu.D.; Vlasov, A.V.; Gavrilov, V.B.

1981-01-01

Hardonic correlations were investigated in reactions with the proton backward production induced by 6.0-GeV/c π - mesons on nuclei Be, C, Al, Cu, Cd, Pb, U. The studied correlations indicate an essential role of multiple interactions of the incident particle in production of cumulative protons [ru

Production of antimatter 5,6Li nuclei in central Au+Au collisions at sNN=200 GeV

Directory of Open Access Journals (Sweden)

Kai-Jia Sun

2015-12-01

Full Text Available Combining the covariant coalescence model and a blast-wave-like analytical parametrization for (anti-nucleon phase–space freezeout configuration, we explore light (anti-nucleus production in central Au+Au collisions at sNN=200 GeV. Using the nucleon freezeout configuration (denoted by FO1 determined from the measured spectra of protons (p, deutrons (d and 3He, we find the predicted yield of 4He is significantly smaller than the experimental data. We show this disagreement can be removed by using a nucleon freezeout configuration (denoted by FO2 in which the nucleons are assumed to freeze out earlier than those in FO1 to effectively consider the effect of large binding energy value of 4He. Assuming the binding energy effect also exists for the production of 5Li, Li‾5, 6Li and Li‾6 due to their similar binding energy values as 4He, we find the yields of these heavier (anti-nuclei can be enhanced by a factor of about one order, implying that although the stable (anti-6Li nucleus is unlikely to be observed, the unstable (anti-5Li nucleus could be produced in observable abundance in Au+Au collisions at sNN=200 GeV where it may be identified through the p–4He (p‾–He‾4 invariant mass spectrum. The future experimental measurement on (anti-5Li would be very useful to understand the production mechanism of heavier antimatter.

New silicate-germanate Cs2Pb2[(Si0.6Ge0.4)2O7] from the series A2Pb2[B2O7], A = K, Cs, B = Si, Ge with the umbrella-like [PbO3]4- group

Science.gov (United States)

Belokoneva, Elena L.; Morozov, Ivan A.; Volkov, Anatoly S.; Dimitrova, Olga V.; Stefanovich, Sergey Yu.

2018-04-01

New silicate-germanate Cs2Pb2[(Si0.6Ge0.4)2O7] was synthesized in multi-components hydrothermal solution with 20 w.% concentration of Cs2CO3 mineralizer, pH = 10. Novel mixed compound belongs to the structure type A2Pb2[B2O7] previously indicated for powders with A = K, B=Si or Ge. Singe crystal structure determination of Cs2Pb2[(Si0.6Ge0.4)2O7] revealed the need for the correction of the space group of the earlier suggested structural model from P-3 to P-3m1, as well as for the splitting of the Pb-atom position. Umbrella-like groups [PbO3]4- are located between [(Si,Ge)O4]4- tetrahedra in mica-like honeycomb layers and play the role of tetrahedra with the Pb-lone-pair as the forth apex. Crystal chemical comparison revealed similarities and differences with the classical structure type of α-celsian Ba[Al2Si2O8] with the tetrahedral double layer. Recently investigated nonlinear optical acentric borates Pb2(BO3)(NO3) and Pb2(BO3)Cl are both related to this structural type, possessing umbrella-like groups [PbO3]4- and honeycomb layers [Pb2(BO3)]+ with the BO3-triangles on the tetrahedral positions.

Physics in Edinburgh: From Napier's Bones to Higgs's Boson

Science.gov (United States)

Henry, John

Edinburgh has been the capital of Scotland since 1437 and by any standards is a beautiful city. It makes an immediate impact upon the visitor because major aspects of its history are there for all to see in the general arrangement of the city, and in its buildings. The Castle, sitting on the prominent summit of one of the volcanic plugs that dominate the topography of the city, is a constant focus for the eye of the wandering tourist. From the Castle Esplanade a downward-sloping road running eastward forms the spine of the Old Town. This road is known to tourists as the Royal Mile, but it actually consists of three parts with separate names: the Lawnmarket, the High Street, and the Canongate. The eastern end of the Canongate culminates at the ruined Holyrood Abbey (granted a Royal Charter in 1124) and the adjacent Palace of Holyrood House, the principal residence of the Scottish monarch since the fifteenth century (although rumored to be the least favorite of the present queen’s residences), and now the new Scottish Parliament building (officially opened in 2004). It is a Royal Mile, then, because it stretches from Castle to Palace.

Determinants of passive smoking in children in Edinburgh, Scotland.

Science.gov (United States)

Jarvis, M J; Strachan, D P; Feyerabend, C

1992-01-01

OBJECTIVES. Using saliva cotinine as a quantitative marker, we examined the contribution of factors other than parental smoking to children's passive exposure to tobacco smoke. METHODS. Saliva specimens from a random sample of 734 7-year-old schoolchildren in Edinburgh, Scotland, were analyzed for cotinine. Their parents completed a questionnaire covering smoking habits and conditions in the home. RESULTS. A number of independent predictors of cotinine were identified in addition to the main one of smoking by household members. These predictors included home ownership, social class, day of the week, season of the year, number of parents present, crowding in the home, the number of children in the household, and sex. Cotinine was higher in children from less advantaged backgrounds, during winter, on Mondays, in girls, and when fewer other children were present. The effects were similar between children from nonsmoking and smoking homes. CONCLUSIONS. Questionnaire measures of parental smoking are insufficient to fully characterize young children's exposure to passive smoking. Because socioeconomic variables contribute to measured exposure, passive-smoking studies that treat class as a confounder and control for it may be overcontrolling. PMID:1503162

Annealing-induced Ge/Si(100) island evolution

International Nuclear Information System (INIS)

Zhang Yangting; Drucker, Jeff

2003-01-01

Ge/Si(100) islands were found to coarsen during in situ annealing at growth temperature. Islands were grown by molecular-beam epitaxy of pure Ge and annealed at substrate temperatures of T=450, 550, 600, and 650 deg. C, with Ge coverages of 6.5, 8.0, and 9.5 monolayers. Three coarsening mechanisms operate in this temperature range: wetting-layer consumption, conventional Ostwald ripening, and Si interdiffusion. For samples grown and annealed at T=450 deg. C, consumption of a metastably thick wetting layer causes rapid initial coarsening. Slower coarsening at longer annealing times occurs by conventional Ostwald ripening. Coarsening of samples grown and annealed at T=550 deg. C occurs via a combination of Si interdiffusion and conventional Ostwald ripening. For samples grown and annealed at T≥600 deg. C, Ostwald ripening of SiGe alloy clusters appears to be the dominant coarsening mechanism

XAFS study of GeO sub 2 glass under pressure

CERN Document Server

Ohtaka, O; Fukui, H; Murai, K; Okube, M; Takebe, H; Katayama, Y; Utsumi, W

2002-01-01

Using a large-volume high-pressure apparatus, Li sub 2 O-4GeO sub 2 glass and pure GeO sub 2 gel have been compressed to 14 GPa at room temperature and their local structural changes have been investigated by an in situ XAFS (x-ray absorption fine-structure) method. On compression of Li sub 2 O-4GeO sub 2 glass, the Ge-O distance gradually becomes short below 7 GPa, showing the conventional compression of the GeO sub 4 tetrahedron. Abrupt increase in the Ge-O distance occurs between 8 and 10 GPa, which corresponds to the coordination number (CN) changing from 4 to 6. The CN change is completed at 10 GPa. On decompression, the reverse transition occurs gradually below 10 GPa. In contrast to the case for Li sub 2 O-4GeO sub 2 glass, the Ge-O distance in GeO sub 2 gel gradually increases over a pressure range from 2 to 12 GPa, indicating that continuous change in CN occurs. The Ge-O distance at 12 GPa is shorter than that of Li-4GeO sub 2 indicating that the change in CN is not completed even at this pressure. O...

Dimorphism in La{sub 5}Ge{sub 3} and Ce{sub 5}Ge{sub 3}? How exploratory syntheses led to surprising new finds in the La-Ge and Ce-Ge binary phase diagrams

Energy Technology Data Exchange (ETDEWEB)

Suen, Nian-Tzu; Bobev, Svilen [Department of Chemistry and Biochemistry, University of Delaware, Newark, DE (United States)

2014-04-15

Reported are the synthesis, the crystal structures, and the electronic structures of two new tetragonal phases, La{sub 5}Ge{sub 3} and Ce{sub 5}Ge{sub 3}. Both title compounds crystallize in the Pu{sub 5}Rh{sub 3} (P4/ncc) structure type, which has close structural relationship with the W{sub 5}Si{sub 3} (I4/mcm) structure type. The synthetic results, supported by thermal analysis suggest that this tetragonal phase is only stable at relatively low temperature and it transforms to the hexagonal form (Mn{sub 5}Si{sub 3} structure type, P6{sub 3}/mcm) at above 850 C. The structural relationship between La{sub 5}Ge{sub 3} (Pu{sub 5}Rh{sub 3} type) and La{sub 5}Sn{sub 3} (W{sub 5}Si{sub 3} type) is discussed as well. Temperature dependent DC magnetization and resistivity measurements indicate that the tetragonal phase La{sub 5}Ge{sub 3} exhibits Pauli-like paramagnetism and is a good metallic conductor. For the tetragonal phase Ce{sub 5}Ge{sub 3}, the magnetic behavior obeys the Curie-Weiss law in the high-temperature regime, while it deviates from the Curie-Weiss law at low temperature. No long-range magnetic ordering was observed down to 5 K, although short-range correlations can be inferred below ca. 50 K. The resistivity measurements of Ce{sub 5}Ge{sub 3} also show metallic-like temperature dependence, although the low-temperature behavior resembling a T{sup 2} law could signify anomalous electron-scattering (e.g., Kondo-like effect). The electronic structures of multiple phases with the same nominal compositions, computed by the TB-LMTO-ASA method, are compared and discussed. (Copyright copyright 2014 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Possible production of glueballs in anti p sup 4 He reactions at 0. 6 GeVc sup -1 incident momentum

Energy Technology Data Exchange (ETDEWEB)

Balestra, F.; Bossolasco, S.; Bussa, M.P.; Busso, L.; Fava, L.; Ferrero, L.; Grasso, A.; Maggiora, A.; Panzieri, D.; Piragino, G.; Piragino, R.; Tosello, F. (Ist. di Fisica Generale ' A. Avogadro' , Univ. of Turin and INFN (Italy)); Bendiscioli, G.; Filippini, V.; Rotondi, A.; Salvini, P.; Zenoni, A. (Dipt. di Fisica Nucleare e Teorica, Univ. of Pavia and INFN, Sezione di Pavia (Italy)); Batusov, Yu.; Bunyatov, S.A.; Falomkin, I.V.; Nichitiu, F.; Pontecorvo, G.B.; Rozhdestvensky, A.M.; Sapozhnikov, M.G.; Tretyak, V.I. (Joint Inst. for Nuclear Research, Dubna (USSR)); Guaraldo, C. (Lab. Nazionali di Frascati, INFN (Italy)); Lodi Rizzini, E. (Dipt. di Automazione Industriale, Univ. of Brescia and INFN, Turin (Italy)); Haatuft, A.; Halsteinslid, A.; Myklebost, K.; Olsen, J.M. (Physics Dept., Univ. of Bergen (Norway)); Breivik, F.O.; Danielsen, K.M.; Jacobsen, T.; Soerensen, S.O. (Inst. of Physics, Univ. of Oslo (Norway))

1991-05-01

A sharp peak at 1150 MeV c{sup -2} in the {pi}{sup -}{pi}{sup +}{pi}{sup -}{pi}{sup +}-system in the final state of anti p {sup 4}He-reactions at 0.6 GeV c{sup -1} incident momentum is seen. This system probably has spin-parity = 0{sup +} or 2{sup +}, which are possible spin-parity assignments of a glueball. (orig.).

Fission and nuclear fragmentation of silver and bromine nuclei by photons of 1-6 GeV

International Nuclear Information System (INIS)

Pinheiro Filho, J.D.

1983-01-01

The studies of fission and fragmentation of silver and bromine nuclei by Bremsstrahlung photons of 1.6 GeV energy range are presented. The Il ford-KO nuclear emulsion submitted to Bremsstrahlung beams in Deutsches Elektronen Synchrotron (DESY) with total doses of 10'' equivalent photons, was used for nuclear fragment detection. The discrimination of fission and fragmentation events was done analysing angular distribution, range and angles between fragments. The results of fragment range distributions, angular distributions, distributions of angles between fragments, distributions of ratio between range, velocity distributions forward/backward ratio, cross sections of fission and fragmentation, nuclear fissionability and ternary fission frequency are presented and discussed. (M.C.K.)

Bose-Einstein correlation of kaons in Si + Au collisions at 14.6 A GeV/c

Science.gov (United States)

Akiba, Y.; Beavis, D.; Beery, P.; Britt, H. C.; Budick, B.; Chasman, C.; Chen, Z.; Chi, C. Y.; Chu, Y. Y.; Cianciolo, V.

1993-01-01

The E-802 spectrometer at the Brookhaven Alternating Gradient Synchrotron, enhanced by a trigger for selection of events with one or more specified particles, has been used to measure the momentum-space correlation between pairs of K(+)s emitted in central Si + Au collisions at 14.6 A GeV/c. This correlation has been projected onto the Lorentz-invariant relative four-momentum axis. Fits to this correlation function yield a size for the kaon source that is comparable to that found using pi(+) pairs from a similar rapidity range, once a transformation from the particle-pair frames to a single source frame is made.

EUROGAM: A high efficiency escape suppressed spectrometer array

Energy Technology Data Exchange (ETDEWEB)

Nolan, P J [Liverpool Univ. (United Kingdom). Oliver Lodge Lab.

1992-08-01

EUROGAM is a UK-France collaboration to develop and build a high efficiency escape suppressed spectrometer array. The project has involved the development of both germanium (Ge) and bismuth germanate (BGO) detectors to produce crystals which are both bigger and have a more complex geometry. As a major investment for the future, the collaboration has developed a new electronics and data acquisition system based on the VXI and VME standards. The array will start its experimental programme in mid 1992 at the Nuclear Structure Facility at Daresbury, U.K. At this stage it will have a total photopeak efficiency (for 1.33 MeV gamma-rays) of {approx} 4.5%. This will give an improvement in sensitivity (relative to presently operating arrays) of a factor of about 10. When EUROGAM moves to France in mid 1993 its photopeak efficiency will have increased to about 8.5% which will result in an increase in sensitivity of a further factor of about 10. In this article I will concentrate on the array which will operate at Daresbury in 1992 and only briefly cover the developments which will take place for the full array before it is used in France in 1993. (author). 13 refs., 2 tabs., 10 figs.

EUROGAM: A high efficiency escape suppressed spectrometer array

International Nuclear Information System (INIS)

Nolan, P.J.

1992-01-01

EUROGAM is a UK-France collaboration to develop and build a high efficiency escape suppressed spectrometer array. The project has involved the development of both germanium (Ge) and bismuth germanate (BGO) detectors to produce crystals which are both bigger and have a more complex geometry. As a major investment for the future, the collaboration has developed a new electronics and data acquisition system based on the VXI and VME standards. The array will start its experimental programme in mid 1992 at the Nuclear Structure Facility at Daresbury, U.K. At this stage it will have a total photopeak efficiency (for 1.33 MeV gamma-rays) of ∼ 4.5%. This will give an improvement in sensitivity (relative to presently operating arrays) of a factor of about 10. When EUROGAM moves to France in mid 1993 its photopeak efficiency will have increased to about 8.5% which will result in an increase in sensitivity of a further factor of about 10. In this article I will concentrate on the array which will operate at Daresbury in 1992 and only briefly cover the developments which will take place for the full array before it is used in France in 1993. (author). 13 refs., 2 tabs., 10 figs

Visible and infrared emission from Si/Ge nanowires synthesized by metal-assisted wet etching.

Science.gov (United States)

Irrera, Alessia; Artoni, Pietro; Fioravanti, Valeria; Franzò, Giorgia; Fazio, Barbara; Musumeci, Paolo; Boninelli, Simona; Impellizzeri, Giuliana; Terrasi, Antonio; Priolo, Francesco; Iacona, Fabio

2014-02-12

Multi-quantum well Si/Ge nanowires (NWs) were realized by combining molecular beam epitaxy deposition and metal-assisted wet etching, which is a low-cost technique for the synthesis of extremely dense (about 1011 cm-2) arrays of NWs with a high and controllable aspect ratio. In particular, we prepared ultrathin Si/Ge NWs having a mean diameter of about 8 nm and lengths spanning from 1.0 to 2.7 μm. NW diameter is compatible with the occurrence of quantum confinement effects and, accordingly, we observed light emission assignable to the presence of Si and Ge nanostructures. We performed a detailed study of the photoluminescence properties of the NWs, with particular attention to the excitation and de-excitation properties as a function of the temperature and of the excitation photon flux, evaluating the excitation cross section and investigating the presence of non-radiative phenomena. PACS: 61.46.Km; 78.55.-m; 78.67.Lt.

Laser annealed in-situ P-doped Ge for on-chip laser source applications (Conference Presentation)

Science.gov (United States)

Srinivasan, Ashwyn; Pantouvaki, Marianna; Shimura, Yosuke; Porret, Clement; Van Deun, Rik; Loo, Roger; Van Thourhout, Dries; Van Campenhout, Joris

2016-05-01

Realization of a monolithically integrated on-chip laser source remains the holy-grail of Silicon Photonics. Germanium (Ge) is a promising semiconductor for lasing applications when highly doped with Phosphorous (P) and or alloyed with Sn [1, 2]. P doping makes Ge a pseudo-direct band gap material and the emitted wavelengths are compatible with fiber-optic communication applications. However, in-situ P doping with Ge2H6 precursor allows a maximum active P concentration of 6×1019 cm-3 [3]. Even with such active P levels, n++ Ge is still an indirect band gap material and could result in very high threshold current densities. In this work, we demonstrate P-doped Ge layers with active n-type doping beyond 1020 cm-3, grown using Ge2H6 and PH3 and subsequently laser annealed, targeting power-efficient on-chip laser sources. The use of Ge2H6 precursors during the growth of P-doped Ge increases the active P concentration level to a record fully activated concentration of 1.3×1020 cm-3 when laser annealed with a fluence of 1.2 J/cm2. The material stack consisted of 200 nm thick P-doped Ge grown on an annealed 1 µm Ge buffer on Si. Ge:P epitaxy was performed with PH3 and Ge2H6 at 320oC. Low temperature growth enable Ge:P epitaxy far from thermodynamic equilibrium, resulting in an enhanced incorporation of P atoms [3]. At such high active P concentration, the n++ Ge layer is expected to be a pseudo-direct band gap material. The photoluminescence (PL) intensities for layers with highest active P concentration show an enhancement of 18× when compared to undoped Ge grown on Si as shown in Fig. 1 and Fig. 2. The layers were optically pumped with a 640 nm laser and an incident intensity of 410 mW/cm2. The PL was measured with a NIR spectrometer with a Hamamatsu R5509-72 NIR photomultiplier tube detector whose detectivity drops at 1620 nm. Due to high active P concentration, we expect band gap narrowing phenomena to push the PL peak to wavelengths beyond the detection limit

Ge nitride formation in N-doped amorphous Ge2Sb2Te5

International Nuclear Information System (INIS)

Jung, M.-C.; Lee, Y. M.; Kim, H.-D.; Kim, M. G.; Shin, H. J.; Kim, K. H.; Song, S. A.; Jeong, H. S.; Ko, C. H.; Han, M.

2007-01-01

The chemical state of N in N-doped amorphous Ge 2 Sb 2 Te 5 (a-GST) samples with 0-14.3 N at. % doping concentrations was investigated by high-resolution x-ray photoelectron spectroscopy (HRXPS) and Ge K-edge x-ray absorption spectroscopy (XAS). HRXPS showed negligible change in the Te 4d and Sb 4d core-level spectra. In the Ge 3d core-level spectra, a Ge nitride (GeN x ) peak developed at the binding energy of 30.2 eV and increased in intensity as the N-doping concentration increased. Generation of GeN x was confirmed by the Ge K-edge absorption spectra. These results indicate that the N atoms bonded with the Ge atoms to form GeN x , rather than bonding with the Te or Sb atoms. It has been suggested that the formation of Ge nitride results in increased resistance and phase-change temperature

Highlights from the Faraday Discussion on New Directions in Porous Crystalline Materials, Edinburgh, UK, June 2017.

Science.gov (United States)

Addicoat, Matthew A; Bennett, Thomas D; Stassen, Ivo

2017-09-28

A lively discussion on new directions in porous crystalline materials took place in June 2017, with the beautiful city of Edinburgh as a backdrop, in the context of the unique Faraday Discussions format. Here, 5 minute presentations were given on papers which had been submitted in advance of the conference, with copious time allocated for in-depth discussion of the work presented. Prof. Mircea Dincă (MIT), chair of the scientific committee, opened the conference by welcoming the many different nationalities attending, and outlining the format of discussions.

Why is GeV physics relevant in the age of the LHC?

Energy Technology Data Exchange (ETDEWEB)

Pennington, Michael R. [JLAB

2014-02-01

The contribution that Jefferson Lab has made, with its 6 GeV electron beam, and will make, with its 12 GeV upgrade, to our understanding of the way the fundamental interactions work, particularly strong coupling QCD, is outlined. The physics at the GeV scale is essential even in TeV collisions.

Enhanced charge storage capability of Ge/GeO2 core/shell nanostructure

International Nuclear Information System (INIS)

Yuan, C L; Lee, P S

2008-01-01

A Ge/GeO 2 core/shell nanostructure embedded in an Al 2 O 3 gate dielectrics matrix was produced. A larger memory window with good data retention was observed in the fabricated metal-insulator-semiconductor (MIS) capacitor for Ge/GeO 2 core/shell nanoparticles compared to Ge nanoparticles only, which is due to the high percentage of defects located on the surface and grain boundaries of the GeO 2 shell. We believe that the findings presented here provide physical insight and offer useful guidelines to controllably modify the charge storage properties of indirect semiconductors through defect engineering

Enhanced charge storage capability of Ge/GeO(2) core/shell nanostructure.

Science.gov (United States)

Yuan, C L; Lee, P S

2008-09-03

A Ge/GeO(2) core/shell nanostructure embedded in an Al(2)O(3) gate dielectrics matrix was produced. A larger memory window with good data retention was observed in the fabricated metal-insulator-semiconductor (MIS) capacitor for Ge/GeO(2) core/shell nanoparticles compared to Ge nanoparticles only, which is due to the high percentage of defects located on the surface and grain boundaries of the GeO(2) shell. We believe that the findings presented here provide physical insight and offer useful guidelines to controllably modify the charge storage properties of indirect semiconductors through defect engineering.

Photoreflectance Spectroscopy Characterization of Ge/Si0.16Ge0.84 Multiple Quantum Wells on Ge Virtual Substrate

Directory of Open Access Journals (Sweden)

Hung-Pin Hsu

2013-01-01

Full Text Available We report a detailed characterization of a Ge/Si0.16Ge0.84 multiple quantum well (MQW structure on Ge-on-Si virtual substrate (VS grown by ultrahigh vacuum chemical vapor deposition by using temperature-dependent photoreflectance (PR in the temperature range from 10 to 300 K. The PR spectra revealed a wide range of optical transitions from the MQW region as well as transitions corresponding to the light-hole and heavy-hole splitting energies of Ge-on-Si VS. A detailed comparison of PR spectral line shape fits and theoretical calculation led to the identification of various quantum-confined interband transitions. The temperature-dependent PR spectra of Ge/Si0.16Ge0.84 MQW were analyzed using Varshni and Bose-Einstein expressions. The parameters that describe the temperature variations of various quantum-confined interband transition energies were evaluated and discussed.

NECTAr: New electronics for the Cherenkov Telescope Array

International Nuclear Information System (INIS)

Vorobiov, S.; Bolmont, J.; Corona, P.; Delagnes, E.; Feinstein, F.; Gascon, D.; Glicenstein, J.-F.; Naumann, C.L.; Nayman, P.; Sanuy, A.; Toussenel, F.; Vincent, P.

2011-01-01

The European astroparticle physics community aims to design and build the next generation array of Imaging Atmospheric Cherenkov Telescopes (IACTs), that will benefit from the experience of the existing H.E.S.S. and MAGIC detectors, and further expand the very-high energy astronomy domain. In order to gain an order of magnitude in sensitivity in the 10 GeV to >100TeV range, the Cherenkov Telescope Array (CTA) will employ 50-100 mirrors of various sizes equipped with 1000-4000 channels per camera, to be compared with the 6000 channels of the final H.E.S.S. array. A 3-year program, started in 2009, aims to build and test a demonstrator module of a generic CTA camera. We present here the NECTAr design of front-end electronics for the CTA, adapted to the trigger and data acquisition of a large IACTs array, with simple production and maintenance. Cost and camera performances are optimized by maximizing integration of the front-end electronics (amplifiers, fast analog samplers, ADCs) in an ASIC, achieving several GS/s and a few μs readout dead-time. We present preliminary results and extrapolated performances from Monte Carlo simulations.

NECTAr: New electronics for the Cherenkov Telescope Array

Energy Technology Data Exchange (ETDEWEB)

Vorobiov, S., E-mail: vorobiov@lpta.in2p3.f [LPTA, Universite Montpellier II and IN2P3/CNRS, Montpellier (France); Bolmont, J.; Corona, P. [LPNHE, Universite Paris VI and IN2P3/CNRS, Paris (France); Delagnes, E. [IRFU/DSM/CEA, Saclay, Gif-sur-Yvette (France); Feinstein, F. [LPTA, Universite Montpellier II and IN2P3/CNRS, Montpellier (France); Gascon, D. [ICC-UB, Universitat Barcelona, Barcelona (Spain); Glicenstein, J.-F. [IRFU/DSM/CEA, Saclay, Gif-sur-Yvette (France); Naumann, C.L.; Nayman, P. [LPNHE, Universite Paris VI and IN2P3/CNRS, Paris (France); Sanuy, A. [ICC-UB, Universitat Barcelona, Barcelona (Spain); Toussenel, F.; Vincent, P. [LPNHE, Universite Paris VI and IN2P3/CNRS, Paris (France)

2011-05-21

The European astroparticle physics community aims to design and build the next generation array of Imaging Atmospheric Cherenkov Telescopes (IACTs), that will benefit from the experience of the existing H.E.S.S. and MAGIC detectors, and further expand the very-high energy astronomy domain. In order to gain an order of magnitude in sensitivity in the 10 GeV to >100TeV range, the Cherenkov Telescope Array (CTA) will employ 50-100 mirrors of various sizes equipped with 1000-4000 channels per camera, to be compared with the 6000 channels of the final H.E.S.S. array. A 3-year program, started in 2009, aims to build and test a demonstrator module of a generic CTA camera. We present here the NECTAr design of front-end electronics for the CTA, adapted to the trigger and data acquisition of a large IACTs array, with simple production and maintenance. Cost and camera performances are optimized by maximizing integration of the front-end electronics (amplifiers, fast analog samplers, ADCs) in an ASIC, achieving several GS/s and a few {mu}s readout dead-time. We present preliminary results and extrapolated performances from Monte Carlo simulations.

Synthesis Study of a 6-Element Non-Uniform Array with Tilted Elements for CLARREO Project

Science.gov (United States)

Jamnejad, Vahraz; Hoorfar, Ahmad

2012-01-01

This paper presents the results of a preliminary study of the gain/pattern properties of a 6-element Radio Occultation (RO) array for the proposed CLARREO (Climate Absolute Radiance and Refractivity Observatory (CLARREO) Project. CLARREO is one of the 4 highest priority missions recommended in the National Research Council Earth Science Decadal Survey.

A study of energy-energy correlations in e+e- annihilations at √s = 34.6 GeV

International Nuclear Information System (INIS)

Berger, C.; Genzel, H.; Lackas, W.; Pielorz, J.; Raupach, F.; Wagner, W.; Ferrarotto, F.; Gaspero, M.; Stella, B.; Zachara, M.; Bussey, P.J.; Cartwright, S.L.; Dainton, J.B.; King, B.T.; Raine, C.; Scarr, J.M.; Skillicorn, I.O.; Smith, K.M.; Thomson, J.C.; Achterberg, O.; Blobel, V.; Burkart, D.; Diehlmann, K.; Feindt, M.; Kapitza, H.; Koppitz, B.; Krueger, M.; Poppe, M.; Spitzer, H.; Staa, R. van; Almeida, F.; Baecker, A.; Barreiro, F.; Brandt, S.; Derikum, K.; Grupen, C.; Meyer, H.J.; Mueller, H.; Neumann, B.; Rost, M.; Stupperich, K.; Zech, G.; Alexander, G.; Bella, G.; Gnat, Y.; Grunhaus, J.; Junge, H.; Kraski, K.; Maxeiner, C.; Maxeiner, H.; Meyer, H.; Schmidt, D.; Buerger, J.; Criegee, L.; Deuter, A.; Franke, G.; Gerke, C.; Knies, G.; Lewendel, B.; Meyer, J.; Michelsen, U.; Pape, K.H.; Timm, U.; Winter, G.G.; Zimmermann, W.

1985-05-01

We present high statistics measurements of the energy-energy correlation (EEC) and its related asymmetry (AEEC) in e + e - annihilation at a c.m. energy of 34.6 GeV. We find that the energy dependence as well as the large angle behaviour of the latter are well described by perturbative QCD calculations to O(αsub(s) 2 ). Non-pertubative effects are estimated with the help of fragmentation models in which different jet topologies are separated using (epsilon,delta) cuts, and found to be small. The extracted values of Δsub(MS) lie between 100 and 300 MeV. (orig.)

78 FR 23595 - Importer of Controlled Substances; Notice of Registration; GE Healthcare

Science.gov (United States)

2013-04-19

... Registration; GE Healthcare By Notice dated January 31, 2013, and published in the Federal Register on February 6, 2013, 78 FR 8583, GE Healthcare, 3350 North Ridge Avenue, Arlington Heights, Illinois 60004-1412... considered the factors in 21 U.S.C. 823(a) and 952(a) and determined that the registration of GE Healthcare...

Effect of Ge Content on the Formation of Ge Nanoclusters in Magnetron-Sputtered GeZrOx-Based Structures

OpenAIRE

Khomenkova, L.; Lehninger, D.; Kondratenko, O.; Ponomaryov, S.; Gudymenko, O.; Tsybrii, Z.; Yukhymchuk, V.; Kladko, V.; von Borany, J.; Heitmann, J.

2017-01-01

Ge-rich ZrO2 films, fabricated by confocal RF magnetron sputtering of pure Ge and ZrO2 targets in Ar plasma, were studied by multi-angle laser ellipsometry, Raman scattering, Auger electron spectroscopy, Fourier transform infrared spectroscopy, and X-ray diffraction for varied deposition conditions and annealing treatments. It was found that as-deposited films are homogeneous for all Ge contents, thermal treatment stimulated a phase separation and a formation of crystalline Ge and ZrO2. The ?...

Isotropic gates and large gamma detector arrays versus angular distributions

International Nuclear Information System (INIS)

Iacob, V.E.; Duchene, G.

1997-01-01

Angular information extracted from in-beam γ ray measurements are of great importance for γ ray multipolarity and nuclear spin assignments. In our days large Ge detector arrays became available allowing the measurements of extremely weak γ rays in almost 4π sr solid angle (e.g., EUROGAM detector array). Given the high detector efficiency it is common for the mean suppressed coincidence multiplicity to reach values as high as 4 to 6. Thus, it is possible to gate on particular γ rays in order to enhance the relative statistics of a definite reaction channel and/or a definite decaying path in the level scheme of the selected residual nucleus. As compared to angular correlations, the conditioned angular distribution spectra exhibit larger statistics because in the latter the gate-setting γ ray may be observed by all the detectors in the array, relaxing somehow the geometrical restrictions of the angular correlations. Since the in-beam γ ray emission is anisotropic one could inquire that gate setting as mentioned above, based on anisotropic γ ray which would perturb the angular distributions in the unfolded events. As our work proved, there is no reason to worry about this if the energy gate runs over the whole solid angle in an ideal 4π sr detector, i.e., if the gate is isotropic. In real quasi 4π sr detector arrays the corresponding quasi isotropic gate preserves the angular properties of the unfolded data, too. However extraction of precise angular distribution coefficient especially a 4 , requires the consideration of the deviation of the quasi isotropic gate relative to the (ideal) isotropic gate

Energy dependence of kaon-to-proton ratio fluctuations in central Pb+Pb collisions from $\\sqrt{s_{NN}}$ = 6.3 to 17.3 GeV

CERN Document Server

Anticic, T.; Barna, D.; Bartke, J.; Beck, H.; Betev, L.; Bialkowska, H.; Blume, C.; Bogusz, M.; Boimska, B.; Book, J.; Botje, M.; Buncic, P.; Cetner, T.; Christakoglou, P.; Chung, P.; Chvala, O.; Cramer, J.G.; Eckardt, V.; Fodor, Z.; Foka, P.; Friese, V.; Gazdzicki, M.; Grebieszkow, K.; Hohne, C.; Kadija, K.; Karev, A.; Kolesnikov, V.I.; Kollegger, T.; Kowalski, M.; Kresan, D.; Laszlo, A.; Lacey, R.; van Leeuwen, M.; Mackowiak, M.; Makariev, M.; Malakhov, A.I.; Mateev, M.; Melkumov, G.L.; Mitrovski, M.; Mrowczynski, St.; Nicolic, V.; Palla, G.; Panagiotou, A.D.; Peryt, W.; Pluta, J.; Prindle, D.; Puhlhofer, F.; Renfordt, R.; Roland, C.; Roland, G.; Rybczynski, M.; Rybicki, A.; Sandoval, A.; Schmitz, N.; Schuster, T.; Seyboth, P.; Sikler, F.; Skrzypczak, E.; Slodkowski, M.; Stefanek, G.; Stock, R.; Strobele, H.; Susa, T.; Szuba, M.; Utvic, M.; Varga, D.; Vassiliou, M.; Veres, G.I.; Vesztergombi, G.; Vranic, D.; Wlodarczyk, Z.; Wojtaszek-Szwarc, A.

2011-01-01

Kaons and protons carry large parts of two conserved quantities, strangeness and baryon number. It is argued that their correlation and thus also fluctuations are sensitive to conditions prevailing at the anticipated parton-hadron phase boundary. Fluctuations of the $(\\mathrm{K}^+ + \\mathrm{K}^-)/(\\mathrm{p}+\\bar{\\mathrm{p}})$ and $\\mathrm{K}^+/\\mathrm{p}$ ratios have been measured for the first time by NA49 in central Pb+Pb collisions at 5 SPS energies between $\\sqrt{s_{NN}}$= 6.3~GeV and 17.3~GeV. Both ratios exhibit a change of sign in $\\sigma_{\\mathrm{dyn}}$, a measure of non-statistical fluctuations, around $\\sqrt{s_{NN}}$ = 8~GeV. Below this energy, $\\sigma_{\\mathrm{dyn}}$ is positive, indicating higher fluctuation compared to a mixed event background sample, while for higher energies, $\\sigma_{\\mathrm{dyn}}$ is negative, indicating correlated emission of kaons and protons. The results are compared to UrQMD calculations which which give a good description at the higher SPS energies, but fail to reproduc...

Search for Chargino and Neutralino Production at $\\sqrt{s} = 189 GeV$ at LEP

CERN Document Server

Abbiendi, G.; Alexander, G.; Allison, John; Anderson, K.J.; Anderson, S.; Arcelli, S.; Asai, S.; Ashby, S.F.; Axen, D.; Azuelos, G.; Ball, A.H.; Barberio, E.; Barlow, Roger J.; Batley, J.R.; Baumann, S.; Bechtluft, J.; Behnke, T.; Bell, Kenneth Watson; Bella, G.; Bellerive, A.; Bentvelsen, S.; Bethke, S.; Betts, S.; Biebel, O.; Biguzzi, A.; Bloodworth, I.J.; Bock, P.; Bohme, J.; Boeriu, O.; Bonacorsi, D.; Boutemeur, M.; Braibant, S.; Bright-Thomas, P.; Brigliadori, L.; Brown, Robert M.; Burckhart, H.J.; Capiluppi, P.; Carnegie, R.K.; Carter, A.A.; Carter, J.R.; Chang, C.Y.; Charlton, David G.; Chrisman, D.; Ciocca, C.; Clarke, P.E.L.; Clay, E.; Cohen, I.; Conboy, J.E.; Cooke, O.C.; Couchman, J.; Couyoumtzelis, C.; Coxe, R.L.; Cuffiani, M.; Dado, S.; Dallavalle, G.Marco; Dallison, S.; Davis, R.; De Jong, S.; de Roeck, A.; Dervan, P.; Desch, K.; Dienes, B.; Dixit, M.S.; Donkers, M.; Dubbert, J.; Duchovni, E.; Duckeck, G.; Duerdoth, I.P.; Estabrooks, P.G.; Etzion, E.; Fabbri, F.; Fanfani, A.; Fanti, M.; Faust, A.A.; Feld, L.; Ferrari, P.; Fiedler, F.; Fierro, M.; Fleck, I.; Frey, A.; Furtjes, A.; Futyan, D.I.; Gagnon, P.; Gary, J.W.; Gaycken, G.; Geich-Gimbel, C.; Giacomelli, G.; Giacomelli, P.; Gibson, W.R.; Gingrich, D.M.; Glenzinski, D.; Goldberg, J.; Gorn, W.; Grandi, C.; Graham, K.; Gross, E.; Grunhaus, J.; Gruwe, M.; Hajdu, C.; Hanson, G.G.; Hansroul, M.; Hapke, M.; Harder, K.; Harel, A.; Hargrove, C.K.; Harin-Dirac, M.; Hauschild, M.; Hawkes, C.M.; Hawkings, R.; Hemingway, R.J.; Herten, G.; Heuer, R.D.; Hildreth, M.D.; Hill, J.C.; Hobson, P.R.; Hocker, James Andrew; Hoffman, Kara Dion; Homer, R.J.; Honma, A.K.; Horvath, D.; Hossain, K.R.; Howard, R.; Huntemeyer, P.; Igo-Kemenes, P.; Imrie, D.C.; Ishii, K.; Jacob, F.R.; Jawahery, A.; Jeremie, H.; Jimack, M.; Jones, C.R.; Jovanovic, P.; Junk, T.R.; Kanaya, N.; Kanzaki, J.; Karlen, D.; Kartvelishvili, V.; Kawagoe, K.; Kawamoto, T.; Kayal, P.I.; Keeler, R.K.; Kellogg, R.G.; Kennedy, B.W.; Kim, D.H.; Klier, A.; Kobayashi, T.; Kobel, M.; Kokott, T.P.; Kolrep, M.; Komamiya, S.; Kowalewski, Robert V.; Kress, T.; Krieger, P.; von Krogh, J.; Kuhl, T.; Kyberd, P.; Lafferty, G.D.; Landsman, H.; Lanske, D.; Lauber, J.; Lawson, I.; Layter, J.G.; Lellouch, D.; Letts, J.; Levinson, L.; Liebisch, R.; Lillich, J.; List, B.; Littlewood, C.; Lloyd, A.W.; Lloyd, S.L.; Loebinger, F.K.; Long, G.D.; Losty, M.J.; Lu, J.; Ludwig, J.; Lui, D.; Macchiolo, A.; Macpherson, A.; Mader, W.; Mannelli, M.; Marcellini, S.; Marchant, T.E.; Martin, A.J.; Martin, J.P.; Martinez, G.; Mashimo, T.; Mattig, Peter; McDonald, W.John; McKenna, J.; Mckigney, E.A.; McMahon, T.J.; McPherson, R.A.; Meijers, F.; Mendez-Lorenzo, P.; Merritt, F.S.; Mes, H.; Meyer, I.; Michelini, A.; Mihara, S.; Mikenberg, G.; Miller, D.J.; Mohr, W.; Montanari, A.; Mori, T.; Nagai, K.; Nakamura, I.; Neal, H.A.; Nisius, R.; O'Neale, S.W.; Oakham, F.G.; Odorici, F.; Ogren, H.O.; Okpara, A.; Oreglia, M.J.; Orito, S.; Pasztor, G.; Pater, J.R.; Patrick, G.N.; Patt, J.; Perez-Ochoa, R.; Petzold, S.; Pfeifenschneider, P.; Pilcher, J.E.; Pinfold, J.; Plane, David E.; Poffenberger, P.; Poli, B.; Polok, J.; Przybycien, M.; Quadt, A.; Rembser, C.; Rick, H.; Robertson, S.; Robins, S.A.; Rodning, N.; Roney, J.M.; Rosati, S.; Roscoe, K.; Rossi, A.M.; Rozen, Y.; Runge, K.; Runolfsson, O.; Rust, D.R.; Sachs, K.; Saeki, T.; Sahr, O.; Sang, W.M.; Sarkisian, E.K.G.; Sbarra, C.; Schaile, A.D.; Schaile, O.; Scharff-Hansen, P.; Schieck, J.; Schmitt, S.; Schoning, A.; Schroder, Matthias; Schumacher, M.; Schwick, C.; Scott, W.G.; Seuster, R.; Shears, T.G.; Shen, B.C.; Shepherd-Themistocleous, C.H.; Sherwood, P.; Siroli, G.P.; Skuja, A.; Smith, A.M.; Snow, G.A.; Sobie, R.; Soldner-Rembold, S.; Spagnolo, S.; Sproston, M.; Stahl, A.; Stephens, K.; Stoll, K.; Strom, David M.; Strohmer, R.; Surrow, B.; Talbot, S.D.; Taras, P.; Tarem, S.; Teuscher, R.; Thiergen, M.; Thomas, J.; Thomson, M.A.; Torrence, E.; Towers, S.; Trefzger, T.; Trigger, I.; Trocsanyi, Z.; Tsur, E.; Turner-Watson, M.F.; Ueda, I.; Van Kooten, Rick J.; Vannerem, P.; Verzocchi, M.; Voss, H.; Wackerle, F.; Wagner, A.; Waller, D.; Ward, C.P.; Ward, D.R.; Watkins, P.M.; Watson, A.T.; Watson, N.K.; Wells, P.S.; Wermes, N.; Wetterling, D.; White, J.S.; Wilson, G.W.; Wilson, J.A.; Wyatt, T.R.; Yamashita, S.; Zacek, V.; Zer-Zion, D.

2000-01-01

A search for charginos and neutralinos, predicted by supersymmetric theories, is performed using a data sample of 182.1 pb-1 taken at a centre-of-mass energy of 189 GeV with the OPAL detector at LEP. No evidence for chargino or neutralino production is found. Upper limits on chargino and neutralino pair production cross-sections are obtained as a function of the chargino mass, the lightest neutralino mass and the second lightest neutralino mass. Within the Constrained Minimal Supersymmetric Standard Model framework, and for a chargino - neutralino mass difference of more than 5 GeV, the 95% confidence level lower limits on the chargino mass are 93.6 GeV for tan{beta} = 1.5 and 94.1 GeV for tan{beta} = 35. These limits are obtained assuming a universal scalar mass m_0 > 500 GeV. The corresponding limits for all m_0 are 78.0 and 71.7 GeV. The 95% confidence level lower limits on the lightest neutralino mass, valid for any value of tan{beta} are 32.8 GeV for m_0 > 500 GeV and 31.6 GeV for all m_0.

Stable and low contact resistance electrical contacts for high temperature SiGe thermoelectric generators

KAUST Repository

Zhang, Bo; Zheng, Tao; Wang, Qingxiao; Guo, Zaibing; Kim, Moon J.; Alshareef, Husam N.; Gnade, Bruce E.

2018-01-01

that no interdiffusion takes place between TaAlN and SiGe. A specific contact resistivity of (2.1±1.3)×10−6Ω-cm2 for p-type SiGe and (2.8±1.6)×10−5 Ω-cm2 for n-type SiGe is demonstrated after the high temperature annealing. These results show that TaAlN is a promising

Addition of Mn to Ge quantum dot surfaces—interaction with the Ge QD {105} facet and the Ge(001) wetting layer

International Nuclear Information System (INIS)

Nolph, C A; Kassim, J K; Floro, J A; Reinke, P

2013-01-01

The interaction of Mn with Ge quantum dots (QD), which are bounded by {105} facets, and the strained Ge wetting layer (WL), terminated by a (001) surface, is investigated with scanning tunneling microscopy (STM). These surfaces constitute the growth surfaces in the growth of Mn-doped QDs. Mn is deposited on the Ge QD and WL surface in sub-monolayer concentrations, and subsequently annealed up to a temperature of 400 ° C. The changes in bonding and surface topography are measured with STM during the annealing process. Mn forms flat islands on the Ge{105} facet, whose shape and position are guided by the rebonded step reconstruction of the facet. Voltage-dependent STM images reflect the Mn-island interaction with the empty and filled states of the Ge{105} reconstruction. Scanning tunneling spectra (STS) of the Ge{105} facet and as-deposited Mn-islands show a bandgap of 0.8 eV, and the Mn-island spectra are characterized by an additional empty state at about 1.4 eV. A statistical analysis of Mn-island shape and position on the QD yields a slight preference for edge positions, whereas the QD strain field does not impact Mn-island position. However, the formation of ultra-small Mn-clusters dominates on the Ge(001) WL, which is in contrast to Mn interaction with unstrained Ge(001) surfaces. Annealing to T 5 Ge 3 from a mass balance analysis. This reaction is accompanied by the disappearance of the original Mn-surface structures and de-wetting of Mn is complete. This study unravels the details of Mn–Ge interactions, and demonstrates the role of surface diffusion as a determinant in the growth of Mn-doped Ge materials. Surface doping of Ge-nanostructures at lower temperatures could provide a pathway to control magnetism in the Mn–Ge system. (paper)

Several new phases in RE-Mg-Ge systems (RE = rare earth metal) - syntheses, structures, and chemical bonding

International Nuclear Information System (INIS)

Suen, Nian-Tzu; Bobev, Svilen

2012-01-01

Reported are the synthesis and structural characterization of Ce_5Mg_8Ge_8 (its own structure type), CeMg_2_-_xGe_2_+_x (BaAl_4-type structure), RE_4Mg_7Ge_6 (RE = Ce-Nd, Sm; La_4Mg_7Ge_6-type structure), and RE_4Mg_5Ge_6 (RE = Ce, Pr; Tm_4Zn_5Ge_6-type structure). The structures of these compounds have been established by single-crystal and powder X-ray diffraction. These compounds are closely related to each other not only in their chemical compositions but also in their structures. A common structural feature of all are MgGe_4 tetrahedra, which are connected by corner- and/or edge-sharing into complex polyanionic frameworks with the rare-earth metal atoms filling the ''empty'' space. The structures are compared to known types of structures, and we have investigated the chemical bonding in Ce_5Mg_8Ge_8 with electronic structure calculations, which were carried out by the tight-bonding linear muffin-tin orbital (TB-LMTO) method. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Enhancement of thermoelectric figure-of-merit in laterally-coupled nanowire arrays

International Nuclear Information System (INIS)

Zhang, Yiqun; Shi, Yi; Pu, Lin; Wang, Junzhuan; Pan, Lijia; Zheng, Youdou

2011-01-01

A high ZT value is predicted in laterally-coupled nanowire arrays. The quantum confinement and coupling of electrons are considered in the framework of effective-mass envelope-function theory. The boundary scattering on phonons is also taken into account. The thermoelectric properties benefit from the large Seebeck coefficient and dramatically reduced lattice thermal conductivity, as well as the preserved electronic conductivity in the minibands of the coupling nanowires. The enhancement of ZT to more than 10-fold is achieved in the n-type Si nanowires/Ge host material. Results suggest that the laterally-coupled nanowire arrays can be designed for high-performance thermoelectric devices. -- Highlights: → A high ZT value is predicted in the lateral-coupling nanowire arrays. → The lattice thermal conductivity is dramatically reduced in the lateral direction of nanowire arrays. → The electron transport is preserved in the lateral direction due to the coupling effect. → The ZT value is largely enhanced as the nanowire volume fraction exceeds some critical point.

Structure, composition, morphology, photoluminescence and cathodoluminescence properties of ZnGeN{sub 2} and ZnGeN{sub 2}:Mn{sup 2+} for field emission displays

Energy Technology Data Exchange (ETDEWEB)

Zhang, Q.-H. [MOE Key Laboratory of Bioinorganic and Synthetic Chemistry, State Key Laboratory of Optoelectronic Materials and Technologies, School of Chemistry and Chemical Engineering, Sun Yat-sen University, Guangzhou, Guangdong 510275 (China); Guangzhou Research Institute of Non-ferrous Metals, Guangzhou, Guangdong 510651 (China); Wang, J., E-mail: ceswj@mail.sysu.edu.cn [MOE Key Laboratory of Bioinorganic and Synthetic Chemistry, State Key Laboratory of Optoelectronic Materials and Technologies, School of Chemistry and Chemical Engineering, Sun Yat-sen University, Guangzhou, Guangdong 510275 (China); Yeh, C.-W.; Ke, W.-C.; Liu, R.-S. [Department of Chemistry, National Taiwan University, Taipei 106, Taiwan (China); Tang, J.-K. [Department of Physics and Astronomy, University of Wyoming, Laramie, WY 82071 (United States); Xie, M.-B.; Liang, H.-B.; Su, Q. [MOE Key Laboratory of Bioinorganic and Synthetic Chemistry, State Key Laboratory of Optoelectronic Materials and Technologies, School of Chemistry and Chemical Engineering, Sun Yat-sen University, Guangzhou, Guangdong 510275 (China)

2010-12-15

Yellowish-orange-emitting ZnGeN{sub 2} and orange-red-emitting ZnGeN{sub 2}:Mn were synthesized by a facile and mild gas-reduction-nitridation reaction at 1153 K under NH{sub 3} flow with air-stable raw materials ZnO, GeO{sub 2} and MnCO{sub 3}. The structure, composition, morphology, photoluminescence and cathodoluminescence properties of ZnGeN{sub 2} doped with or without Mn{sup 2+} were systematically investigated. Rietveld refinements show that the as-synthesized samples are obtained as single-phase compounds and crystallize as an orthorhombic structure with a space group of Pna2{sub 1}. The actual chemical composition of the as-prepared ZnGeN{sub 2} determined by energy dispersive X-ray spectroscopy suggests that the Ge vacancy defects probably exist in the host. The SEM image reveals that the Zn{sub 0.99}Mn{sub 0.01}GeN{sub 2} particles form aggregates {approx}500-600 nm in size. The diffuse reflection spectrum and photoluminescence excitation spectrum confirm that the band edge absorption of ZnGeN{sub 2} at low energy is 3.3 eV ({approx}376 nm). Upon UV light excitation and electron beam excitation, ZnGeN{sub 2} gives an intense yellowish-orange emission around 580-600 nm, associated with a deep defect level due to the Ge vacancy defects, and ZnGeN{sub 2}:Mn shows an intense red emission at 610 nm due to the {sup 4}T{sub 1g}({sup 4}G) {yields} 6A{sub 1g}({sup 6}S) of Mn{sup 2+}. The unusual red emission of Mn{sup 2+} in tetrahedral Zn{sup 2+} sites is attributed to the strong nephelauxetic effect between Mn{sup 2+} and the surrounding tetrahedrally coordinated nitrogen. The photoluminescence and cathodoluminescence emission colors of ZnGeN{sub 2}:Mn have a high color purity of {approx}93-98%. These results demonstrate that ZnGeN{sub 2}:Mn is a novel, promising red-emitting nitride, potentially applicable to field emission displays with brilliant color-rendering properties and a large color gamut.

Isothermal section of the ternary phase diagram U–Fe–Ge at 900 °C and its new intermetallic phases

Energy Technology Data Exchange (ETDEWEB)

Henriques, M.S., E-mail: mish@itn.pt [Institute of Physics, Academy of Sciences of the Czech Republic, Na Slovance 2, 182 21 Prague (Czech Republic); CCTN, IST/CFMCUL, University of Lisbon, Nuclear and Technological Campus, P-2695-066 Bobadela (Portugal); Berthebaud, D.; Lignie, A.; El Sayah, Z.; Moussa, C.; Tougait, O. [Institut des Sciences Chimiques de Rennes, Chimie du Solide et Matériaux, Université Rennes 1, UMR CNRS 6226, 263 Avenue du Général Leclerc, 35042 Rennes (France); Havela, L. [Department of Condensed Matter Physics, Faculty of Mathematics and Physics, Charles University, Ke Karlovu 5, 121 16 Prague (Czech Republic); Gonçalves, A.P. [CCTN, IST/CFMCUL, University of Lisbon, Nuclear and Technological Campus, P-2695-066 Bobadela (Portugal)

2015-08-05

Highlights: • Isothermal section of the U–Fe–Ge at 900 °C was investigated. • Ten ternary compounds and four significant solubility ranges were found. • Three new compounds and a solid solution were discovered. - Abstract: The isothermal section at 900 °C of the U–Fe–Ge ternary system was assessed using experimental results from X-ray diffraction and observations by scanning electron microscopy coupled with energy dispersive X-ray spectroscopy chemical analysis. The phase diagram at this temperature is characterized by the formation of fourteen stable phases: four homogeneity ranges and ten intermetallic compounds. Among these, there is an extension of the binary compound UFe{sub 2} into the ternary system (UFe{sub 2−x}Ge{sub x,}x < 0.15), three ternary line compounds, U{sub 2}Fe{sub 17−x}Ge{sub x} (2 < x < 3.7), UFe{sub 1−x}Ge{sub 2} (0.58 < x < 0.78), UFe{sub 6+x}Ge{sub 6−x} (x < 0.7), and ten ternary stoichiometric compounds, U{sub 2}Fe{sub 3}Ge, U{sub 6}Fe{sub 16}Ge{sub 7}, UFe{sub 4}Ge{sub 2}, U{sub 6}Fe{sub 22}Ge{sub 13}, UFeGe, U{sub 3}Fe{sub 4}Ge{sub 4}, UFe{sub 2}Ge{sub 2}, U{sub 34}Fe{sub 3.32}Ge{sub 33}, U{sub 3}Fe{sub 2}Ge{sub 7}, and U{sub 9}Fe{sub 7}Ge{sub 24}.

Photo-induced effects of the virgin Ge{sub 24.9}Sb{sub 11.6}S{sub 63.5} film

Energy Technology Data Exchange (ETDEWEB)

Knotek, P., E-mail: petr.knotek@upce.cz [University of Pardubice, Faculty of Chemical Technology, Department of General and Inorganic Chemistry, Studentska 573, 532 10 Pardubice (Czech Republic); Tichy, L. [Institute of Macromolecular Chemistry, AS CR, Heyrovskeho sq. 2, 162 06 Prague (Czech Republic); Kutalek, P. [University of Pardubice, Faculty of Chemical Technology, Joint Laboratory of Solid State Chemistry of Institute of Macromolecular Chemistry of Academy of Sciences of the Czech Republic, v.v.i., and University of Pardubice, Studentska 573, 532 10 Pardubice (Czech Republic)

2015-11-02

Amorphous Ge{sub 24.9}Sb{sub 11.6}S{sub 63.5} film was prepared through thermal evaporation. A blue shift of the optical band gap by approximately 100 meV was observed as a result of self-bleaching process of protected film aged for two years. The magnitude of the light induced blue shift of the optical band of the virgin film is primarily dependent on the light penetration depth and on the light intensity. The kinetics of photo-bleaching follows the stretch exponential function with a formal rate of bleaching depending on the light intensity while the saturated state is independent from the light intensity. The far infrared spectra indicate that ageing, illumination by over-band gap-photons and annealing of the virgin film are mainly accompanied by the film network ordering. Illumination by UV light photons led to a blue shift accompanied by the significant oxidation as evidenced by the results of the far infrared spectra and the energy dispersive analysis. - Highlights: • “Giant” photo-induced effects in virgin Ge{sub 24.9}Sb{sub 11.6}S{sub 63.5} film • The role of the film thickness, the wavelengths and intensity of excitation photons • The changes of the photo-sensitivity due to the self-ageing process • The high-intensity illumination (> 10 W/cm{sup 2}) led to the different processes.

Isothermal cross-sections of Sr-Al-Ge and Ba-Al-Ge systems at 673 K

International Nuclear Information System (INIS)

Kutsenok, N.L.; Yanson, T.I.

1987-01-01

X-ray and microstructural analyses are used to study phase equilibria in Sr-Al-Ge and Ba-Al-Ge systems. Existence of SrAl 2 Ge 2 , Sr(Al, Ge) 2 Ba(Al, Ge) 2 , Sr 3 Al 2 Ge 2 , Ba 3 Al 2 Ge 2 ternary compounds is confirmed, a new BaGe 4 binary compound and also new ternary compounds of approximate composition Sr 57 Al 30 Ge 13 and Ba 20 Al 40 Ge 40 , which crystal structure is unknown, are detected. Aluminium solubility in SrAl 4 and BaAl 4 binary compounds (0.05 atomic fraction) is determined. Ba(Al, Ge) 2 compound homogeneity region is defined more exactly (aluminium content varies from 0.27 to 0.51 at. fractions)

Growth of Ferromagnetic Epitaxial Film of Hexagonal FeGe on (111) Ge Surface

Science.gov (United States)

Kumar, Dushyant; Joshi, P. C.; Hossain, Z.; Budhani, R. C.

2014-03-01

The realization of semiconductors showing ferromagnetic order at easily accessible temperatures has been of interest due to their potential use in spintronic devices where long spin life times are of key interest. We have realized the growth of FeGe thin films on Ge (111) wafers using pulsed laser deposition (PLD). The stoichiometric and single phase FeGe target used in PLD chamber has been made by arc melting. A typical θ-2 θ diffraction spectra performed on 40 nm thick FeGe film suggests the stabilization of β-Ni2In (B82-type) hexagonal phase with an epitaxial orientation of (0001)FeGe ||(111)Ge and [11-20]FeGe ||[-110]Ge. SEM images shows a granular structure with the formation of very large grains of about 100 to 500 nm in lateral dimension. The magnetization vs. temperature data taken from SQUID reveal the TC of ~ 270K. Since, PLD technique makes it easier to stabilize the B82 (Ni2In) hexagonal phase in thin FeGe films, this work opens opportunities to reinvestigate many conflicting results on various properties of the FeGe system.

Collision geometry scaling of Au+Au pseudorapidity density from √(sNN )=19.6 to 200 GeV

Science.gov (United States)

Back, B. B.; Baker, M. D.; Ballintijn, M.; Barton, D. S.; Betts, R. R.; Bickley, A. A.; Bindel, R.; Budzanowski, A.; Busza, W.; Carroll, A.; Decowski, M. P.; García, E.; George, N.; Gulbrandsen, K.; Gushue, S.; Halliwell, C.; Hamblen, J.; Heintzelman, G. A.; Henderson, C.; Hofman, D. J.; Hollis, R. S.; Hołyński, R.; Holzman, B.; Iordanova, A.; Johnson, E.; Kane, J. L.; Katzy, J.; Khan, N.; Kucewicz, W.; Kulinich, P.; Kuo, C. M.; Lin, W. T.; Manly, S.; McLeod, D.; Mignerey, A. C.; Nouicer, R.; Olszewski, A.; Pak, R.; Park, I. C.; Pernegger, H.; Reed, C.; Remsberg, L. P.; Reuter, M.; Roland, C.; Roland, G.; Rosenberg, L.; Sagerer, J.; Sarin, P.; Sawicki, P.; Skulski, W.; Steinberg, P.; Stephans, G. S.; Sukhanov, A.; Tonjes, M. B.; Tang, J.-L.; Trzupek, A.; Vale, C.; van Nieuwenhuizen, G. J.; Verdier, R.; Wolfs, F. L.; Wosiek, B.; Woźniak, K.; Wuosmaa, A. H.; Wysłouch, B.

2004-08-01

The centrality dependence of the midrapidity charged particle multiplicity in Au+Au heavy-ion collisions at √(sNN )=19.6 and 200 GeV is presented. Within a simple model, the fraction of hard (scaling with number of binary collisions) to soft (scaling with number of participant pairs) interactions is consistent with a value of x=0.13±0.01 (stat) ±0.05 (syst) at both energies. The experimental results at both energies, scaled by inelastic p ( p¯ ) +p collision data, agree within systematic errors. The ratio of the data was found not to depend on centrality over the studied range and yields a simple linear scale factor of R200/19.6 =2.03±0.02 (stat) ±0.05 (syst) .

Preparation and investigation of Ge-S-I glasses for infrared fiber optics

Science.gov (United States)

Velmuzhov, A. P.; Sukhanov, M. V.; Plekhovich, A. D.; Snopatin, G. E.; Churbanov, M. F.; Iskhakova, L. D.; Ermakov, R. P.; Kotereva, T. V.; Shiryaev, V. S.

2016-02-01

Glass samples of [GeSx]90I10 (x = 1.5, 1.7, 2.0, 2.3, 2.45, 2.6) compositions were prepared, and some their thermal, optical properties as well as tendency to crystallization were investigated. The compositional dependences of glass transition temperature, volume fraction of crystallized phase and activation energy of glass formation (Eg) have nonmonotonic character with a maximum for [GeS2.0]90I10 glass. Glasses of 85.8GeS2-14.2GeI4 and [GeS1.5]90I10 compositions are identified as promising for preparation of optical fiber. For the first time, Ge-S-I glass fibers were produced. Minimum optical losses in 85.8GeS2-14.2GeI4 glass fiber were 2.7 dB/m at a wavelength of 5.1 μm, and that in [GeS1.5]90I10 glass fiber were 14.5 dB/m at 5.5 μm.

Single pion and several pions production in π+p interactions at 1.6 GeV/c

International Nuclear Information System (INIS)

Jabiol, M.A.

1966-01-01

The production of ρ + , N 33 * , and η 0 was observed in π + p interactions at 1.6 GeV/c. In the reactions where one pion is created, the comparison between the experimental distribution of the ρ + and the N 33 * with the predictions of the peripheral model modified by absorption effects permits the conclusion that the contribution of this model is important, but that other effects such as interferences between ρ + and N 33 * are not negligible. In the reactions where several pions are created, the branching ratios of some decay modes of η0 are evaluated and the associated production of η 0 and N 33 * is observed. (author) [fr

Single pion and several pions production in {pi}{sup +}p interactions at 1.6 GeV/c; Creation d'un et plusieurs mesons {pi} dans les interactions {pi}{sup +} p a 1,6 GeV/c

Energy Technology Data Exchange (ETDEWEB)

Jabiol, M.A. [Commissariat a l' Energie Atomique, Centre d' Etudes Nucleaires de Saclay, 91 - Gif-sur-Yvette (France)

1966-07-01

The production of {rho}{sup +}, N{sub 33}{sup *}, and {eta}{sup 0} was observed in {pi}{sup +}p interactions at 1.6 GeV/c. In the reactions where one pion is created, the comparison between the experimental distribution of the {rho}{sup +} and the N{sub 33}{sup *} with the predictions of the peripheral model modified by absorption effects permits the conclusion that the contribution of this model is important, but that other effects such as interferences between {rho}{sup +} and N{sub 33}{sup *} are not negligible. In the reactions where several pions are created, the branching ratios of some decay modes of {eta}0 are evaluated and the associated production of {eta}{sup 0} and N{sub 33}{sup *} is observed. (author) [French] La production des resonances {rho}{sup +}, N{sub 33}{sup *} et {eta}{sup 0} a ete observee dans les interactions {pi}{sup +}p a 1,6 GeV/c. Dans les reactions ou un seul meson {pi} est cree, la comparaison des distributions experimentales relatives au meson {rho}{sup +} et a l'isobare N{sub 33}{sup *} aux previsions du modele peripherique modifie par les effets d'absorption, permet d'affirmer que la contribution de ce modele est importante, mais que des effets tels que les interferences entre les processus de creation du {rho}{sup +} et de N{sub 33}{sup *} ne sont pas negligeables. Dans les reactions ou plusieurs mesons {pi} sont crees, les rapports de branchement de certains modes de desintegration du meson {eta}{sup 0} ont pu etre evalues et la production associee du {eta}{sup 0} et de N{sub 33}{sup *} a ete observee. (auteur)

Stable and low contact resistance electrical contacts for high temperature SiGe thermoelectric generators

KAUST Repository

Zhang, Bo

2018-04-14

The thermal stability and contact resistance of TaAlN thin films as electrical contacts to SiGe thermoelectric elements are reported. We demonstrate that a sharp interface is maintained after the device annealed at 800°C for over 100h, indicating that no interdiffusion takes place between TaAlN and SiGe. A specific contact resistivity of (2.1±1.3)×10−6Ω-cm2 for p-type SiGe and (2.8±1.6)×10−5 Ω-cm2 for n-type SiGe is demonstrated after the high temperature annealing. These results show that TaAlN is a promising contact material for high temperature thermoelectrics such as SiGe.

Photoreflectance Spectroscopy Characterization of Ge/Si0.16Ge0.84 Multiple Quantum Wells on Ge Virtual Substrate

OpenAIRE

Hsu, Hung-Pin; Yang, Pong-Hong; Huang, Jeng-Kuang; Wu, Po-Hung; Huang, Ying-Sheng; Li, Cheng; Huang, Shi-Hao; Tiong, Kwong-Kau

2013-01-01

We report a detailed characterization of a Ge/Si0.16Ge0.84 multiple quantum well (MQW) structure on Ge-on-Si virtual substrate (VS) grown by ultrahigh vacuum chemical vapor deposition by using temperature-dependent photoreflectance (PR) in the temperature range from 10 to 300 K. The PR spectra revealed a wide range of optical transitions from the MQW region as well as transitions corresponding to the light-hole and heavy-hole splitting energies of Ge-on-Si VS. A detailed comparison of PR spec...

Pair production of pions with symmetric momenta in the range 0.5 <= Psub(T) <= 2.0 GeV/c in 70-GeV p-p collisions

International Nuclear Information System (INIS)

Abramov, V.V.; Baldin, V.Yu.; Buzulutskov, A.F.

1981-01-01

The process of pion pair production is studied in the 70 GeV pp collisions. The invariant cross section slope of the pp → π + π - + X process as a function of transverse mompsub(T)entum is found to have a break near 1 GeV/c. Fitting the cross section by a sum of two exponents gives the values of powers (12.3+-0.9) (GeV/c) -1 and (8.7+-0.6) (GeV/c) -1 . The experimental points at psub(T)>=1 GeV/c are significantly higher than predictions based on hard scattering models such as quantum chromodynamics and constituent interchange model. The largest disagreement is discovered for calculations of the cross section in the framework of quantum chromodynamics [ru

Fabrication of SrGe2 thin films on Ge (100), (110), and (111) substrates

Science.gov (United States)

Imajo, T.; Toko, K.; Takabe, R.; Saitoh, N.; Yoshizawa, N.; Suemasu, T.

2018-01-01

Semiconductor strontium digermanide (SrGe2) has a large absorption coefficient in the near-infrared light region and is expected to be useful for multijunction solar cells. This study firstly demonstrates the formation of SrGe2 thin films via a reactive deposition epitaxy on Ge substrates. The growth morphology of SrGe2 dramatically changed depending on the growth temperature (300-700 °C) and the crystal orientation of the Ge substrate. We succeeded in obtaining single-oriented SrGe2 using a Ge (110) substrate at 500 °C. Development on Si or glass substrates will lead to the application of SrGe2 to high-efficiency thin-film solar cells.

70Ge, 72Ge, 74Ge, 76Ge(d,3He)69Ga, 71Ga, 73Ga, 75Ga reactions at 26 MeV

International Nuclear Information System (INIS)

Rotbard, G.; La Rana, G.; Vergnes, M.; Berrier, G.; Kalifa, J.; Guilbaut, G.; Tamisier, R.

1978-01-01

The 70 Ge, 72 Ge, 74 Ge, 76 Ge(d, 3 He) 69 Ga, 71 Ga, 73 Ga, 75 Ga reactions have been studied at 26 MeV with 15 keV resolution (F.W.H.M), using the Orsay MP tandem accelerator and a split pole magnetic spectrometer. The spectroscopic factors are determined for 15 levels in 69 Ga and 11 levels in each of the 3 other Ga isotopes. Level schemes are proposed for the practically unknown 73 Ga and 75 Ga. Very simple model wave functions previously proposed for Ge nuclei are seen to reproduce quite well the measured occupation numbers for the proton orbitals. Anomalies in these occupation numbers are observed between Z=31 and 32 and between N=40 and 42, this last one corresponding to the structural transition observed recently in a comparison of the (p,t) and (t,p) reactions. These anomalies could be related to changes in the nuclear shape

Preparation of special purity Ge - S - I and Ge - Se - I glasses

Science.gov (United States)

Velmuzhov, A. P.; Sukhanov, M. V.; Shiryaev, V. S.; Kotereva, T. V.; Snopatin, G. E.; Churbanov, M. F.

2017-05-01

The paper considers the new approaches for the production of special pure Ge - S - I and Ge - Se - I glasses via the germanium(IV) iodide, germanium(II) sulfide, as well as the Ge2S3, Ge2S3I2 and Ge2Se3I2 glassy alloys. The glass samples containing 0.03-0.17 ppm(wt) hydrogen impurity in the form of SH-group, 0.04-0.15 ppm(wt) hydrogen impurity in the form of SeH-group, and 0.5-7.8 ppm(wt) oxygen impurity in the form of Ge-O were produced. Using a crucible technique, the single-index [GeSe4]95I5 glass fibers of 300-400 μm diameter were drawn. The minimum optical losses in the best fiber were 1.7 dB/m at a wavelength of 5.5 μm; the background optical losses were within 2-3 dB/m in the spectral range of 2.5-8 μm.

Strain distribution of confined Ge/GeO2 core/shell nanoparticles engineered by growth environments

Science.gov (United States)

Wei, Wenyan; Yuan, Cailei; Luo, Xingfang; Yu, Ting; Wang, Gongping

2016-02-01

The strain distributions of Ge/GeO2 core/shell nanoparticles confined in different host matrix grown by surface oxidation are investigated. The simulated results by finite element method demonstrated that the strains of the Ge core and the GeO2 shell strongly depend on the growth environments of the nanoparticles. Moreover, it can be found that there is a transformation of the strain on Ge core from tensile to compressive strain during the growth of Ge/GeO2 core/shell nanoparticles. And, the transformation of the strain is closely related with the Young's modulus of surrounding materials of Ge/GeO2 core/shell nanoparticles.

Thermoelectric properties of Cu/Ag doped type-III Ba24Ge100 clathrates

Science.gov (United States)

Fu, Jiefei; Su, Xianli; Yan, Yonggao; Liu, Wei; Zhang, Zhengkai; She, Xiaoyu; Uher, Ctirad; Tang, Xinfeng

2017-09-01

Type-III Ba24Ge100 clathrates possess low thermal conductivity and high electrical conductivity at room temperature and, as such, have a great potential as thermoelectric materials for power generation. However, the Seebeck coefficient is very low due to the intrinsically high carrier concentration. In this paper, a series of Ba24CuxGe100-x and Ba24AgyGe100-y specimens were prepared by vacuum melting combined with the subsequent spark plasma sintering (SPS) process. Doping Cu or Ag on the Ge site not only suppresses the concentration of electrons but it also decreases the thermal conductivity. In addition, the carrier mobility and the Seebeck coefficient increase due to the decrease in the carrier concentration. Thus, the power factor is greatly improved, leading to an improvement in the dimensionless figure of merit ZT. Cu-doped Ba24Cu6Ge94 reaches the maximum ZT value of about 0.17 at 873 K, while Ag-doped Ba24Ag6Ge94 attains the dimensionless figure of merit ZT of 0.31 at 873 K, more than 2 times higher value compared to un-doped Ba24Ge100.

Phase equilibria, crystal chemistry, electronic structure and physical properties of Ag-Ba-Ge clathrates

Energy Technology Data Exchange (ETDEWEB)

Zeiringer, I.; Chen Mingxing [Institute of Physical Chemistry, University of Vienna, Waehringerstr. 42, 1090 Wien (Austria); Bednar, I.; Royanian, E.; Bauer, E. [Institute of Solid State Physics, Vienna University of Technology, Wiedner Hauptstr. 8-10, 1040 Wien (Austria); Podloucky, R.; Grytsiv, A. [Institute of Physical Chemistry, University of Vienna, Waehringerstr. 42, 1090 Wien (Austria); Rogl, P., E-mail: peter.franz.rogl@univie.ac.at [Institute of Physical Chemistry, University of Vienna, Waehringerstr. 42, 1090 Wien (Austria); Effenberger, H. [Institute of Mineralogy and Crystallography, University of Vienna, A-1090 Wien (Austria)

2011-04-15

In the Ag-Ba-Ge system the clathrate type-{Iota} solid solution, Ba{sub 8}Ag{sub x}Ge{sub 46-x-y{open_square}y}, extends at 800 deg. C from binary Ba{sub 8}Ge{sub 43{open_square}3} ({open_square} is a vacancy) to Ba{sub 8}Ag{sub 5.3}Ge{sub 40.7}. For the clathrate phase (1 {<=} x {<=} 5.3) the cubic space group Pm3-bar n was established by X-ray powder diffraction and confirmed by X-ray single-crystal analyses of the samples Ba{sub 8}Ag{sub 2.3}Ge{sub 41.9{open_square}1.8} and Ba{sub 8}Ag{sub 4.4}Ge{sub 41.3{open_square}0.3}. Increasing the concentration of Ag causes the lattice parameters of the solid solution to increase linearly from a value of a = 1.0656 (x = 0, y = 3) to a = 1.0842 (x = 4.8, y = 0) nm. Site preference determination using X-ray refinement reveals that Ag atoms preferentially occupy the 6d site randomly mixed with Ge and vacancies, which become filled in the compound Ba{sub 8}Ag{sub 4.8}Ge{sub 41.2} when the Ag content increases. At 600 {sup o}C the phase region of the clathrate solution Ba{sub 8}Ag{sub x}Ge{sub 46-x-y{open_square}y} becomes separated from the Ba-Ge boundary and extends from 6.6 to 9.8 at.% Ag. The compound Ba{sub 6}Ge{sub 25} (clathrate type-{Iota}X) dissolves at 800 {sup o}C a maximum of 1.5 at.% Ag. The homogeneity regions of the two ternary compounds BaAg{sub 2-x}Ge{sub 2+x} (ThCr{sub 2}Si{sub 2}-type, 0.2 {<=} x {<=} 0.7) and Ba(Ag{sub 1-x}Ge{sub x}){sub 2} (AlB{sub 2}-type, 0.65 {<=} x {<=} 0.75) were established at 800 deg. C. Studies of transport properties for the series of Ba{sub 8}Ag{sub x}Ge{sub 46-x-y{open_square}y} compounds evidenced that electrons are the predominant charge carriers with the Fermi energy close to a gap. Its position can be fine-tuned by the substitution of Ge by Ag atoms and by mechanical processing of the starting material, Ba{sub 8}Ge{sub 43}. The proximity of the electronic structure at Fermi energy of Ba{sub 8}Ag{sub x}Ge{sub 46-x-y{open_square}y} to a gap is also corroborated by density

Double emission of {lambda} hyperons in the K{sup -} of 6 GeV/c interactions with nucleus of photonuclear emulsion; Doble emision de hiperones {lambda} en las interacciones de K{sup -} de 6 GeV/c con nucleos de emulsion fotonuclear

Energy Technology Data Exchange (ETDEWEB)

Tejerina Garcia, A F

1970-07-01

In this memory one analyse the interactions with three or more centers, produced by K{sup -} of 6 GeV/c with nucleus of photonuclear emulsion. the analysis of one event with three centers has been consistent with the formation and decay of double hyperfragment {lambda}{lambda}{sup c}11, being the binding energy of the two {lambda} hyperons to the nuclear core of double hyperfragment: B{sub {lambda}}{lambda}= 20.2{+-}1.1. MeV and the {lambda}{lambda} interaction contribution to B{sub {lambda}}{lambda}, B{sub {lambda}}{lambda}=3.2{+-}1.1.MeV. (Author) 11 refs.

Ge nanobelts with high compressive strain fabricated by secondary oxidation of self-assembly SiGe rings

DEFF Research Database (Denmark)

Lu, Weifang; Li, Cheng; Lin, Guangyang

2015-01-01

Curled Ge nanobelts were fabricated by secondary oxidation of self-assembly SiGe rings, which were exfoliated from the SiGe stripes on the insulator. The Ge-rich SiGe stripes on insulator were formed by hololithography and modified Ge condensation processes of Si0.82Ge0.18 on SOI substrate. Ge...... nanobelts under a residual compressive strain of 2% were achieved, and the strain should be higher before partly releasing through bulge islands and breakage of the curled Ge nanobelts during the secondary oxidation process. The primary factor leading to compressive strain is thermal shrinkage of Ge...... nanobelts, which extrudes to Ge nanobelts in radial and tangent directions during the cooling process. This technique is promising for application in high-mobility Ge nano-scale transistors...

Beiträge zur 6. Diskussionssitzung der ITG-Fachgruppe "Angewandte Informationstheorie"

OpenAIRE

Meurer, Michael

2005-01-01

Langvorträge: T. Schorr, A. Dittrich, W. Sauer-Greff, R. Urbansky (Lehrstuhl für Nachrichtentechnik, TU Kaiserslautern): Iterative Equalization in Fibre Optical Systems Using High-Rate RCPR, BCH and LDPC Codes A. Doenmez, T. Hehn, J. B. Huber (Lehrstuhl für Informationsübertragung, Universität Erlangen-Nürnberg): Analytical Calculation of Thresholds for LDPC Codes transmitted over Binary Erasure Channels S. Deng, T. Weber (Institut für Nachrichtentechnik und Informationselektronik, Universitä...

Anti pp elastic scattering at 30 GeV/c incident momentum in the momentum transfer range 0. 5<-t<5. 8(GeV/c)/sup 2/

Energy Technology Data Exchange (ETDEWEB)

Asa' d, Z.; Coupland, M.; Davis, D.G.; Duff, B.G.; Fearnley, T.; Heymann, F.F.; Imrie, D.C.; Lush, G.J.; Phillips, M. (University Coll., London (UK)); Baglin, A.

1983-10-27

The anti pp elastic differential cross section at 30 GeV/c incident momentum has been measured in a two-arm spectrometer experiment (WA7) at the CERN SPS. The vertical stroketvertical stroke-range covered extends from 0.5 to 5.8 (GeV/c)/sup 2/. A pronounced dip-bump structure is observed, with a sharp minimum around vertical stroketvertical strokeapprox.=1.7 (GeV/c)/sup 2/. The results are compared with existing anti pp data at lower energies and with our earlier anti pp data at 50 GeV/c. A number of model predictions are discussed. We also compare the anti pp 30 GeV/c differential cross section with that of pp at the same momentum. Finally, the energy dependence of the anti pp fixed-vertical stroketvertical stroke differential cross section in the incident momentum range 3.6 to 50 GeV/c is presented.

INFN Camera demonstrator for the Cherenkov Telescope Array