WorldWideScience

Sample records for edge-defined film-fed growth

  1. Modeling the effects of the vertical temperature gradient in the furnace in an edge-defined film-fed growth technique

    International Nuclear Information System (INIS)

    Epure, S.; Braescu, L.; Balint, St.

    2006-01-01

    In this paper, the mathematical model for the growth of cylindrical bars described elsewhere is considered. Using MathCAD 11 Enterprise Edition and mathematical tools, the asymptotically stable steady-states (r*, h*) of the nonlinear system of differential equations which governs the evolution of the bar radius r=r(t) and the meniscus height h=h(t), for different values of the pulling rate v, the melt temperature T 0 at the meniscus basis and the vertical temperature gradient k in the furnace, respectively, are found. For a given k, the range of the stable growth regions in the (v, T 0 ) plane (i.e. those couples (v, T 0 ) for which (r*, h*) has physical sense) are determined. The effects of the changes of the vertical temperature gradient k are investigated and it is shown that if v and T 0 are constant, and k increases, then the bar radius r increases and the meniscus height h decreases. Numerical results are given for the silicon bar grown in an edge-defined film-fed growth (E.F.G.) system with a die radius r 0e =20(cmx10 -2 )

  2. The status of silicon ribbon growth technology for high-efficiency silicon solar cells

    Science.gov (United States)

    Ciszek, T. F.

    1985-01-01

    More than a dozen methods have been applied to the growth of silicon ribbons, beginning as early as 1963. The ribbon geometry has been particularly intriguing for photovoltaic applications, because it might provide large area, damage free, nearly continuous substrates without the material loss or cost of ingot wafering. In general, the efficiency of silicon ribbon solar cells has been lower than that of ingot cells. The status of some ribbon growth techniques that have achieved laboratory efficiencies greater than 13.5% are reviewed, i.e., edge-defined, film-fed growth (EFG), edge-supported pulling (ESP), ribbon against a drop (RAD), and dendritic web growth (web).

  3. Large Area Silicon Sheet by EFG. [quality control and productivity of edge-defined film-fed growth of ribbons

    Science.gov (United States)

    1979-01-01

    Influences on ribbon quality which might be caused by various materials of construction which are used in the growth furnace were assessed. At the present level of ribbon quality, which has produced 8.5% to 9.5% efficient solar cells, no particular influence of any furnace part was detected. The experiments led to the suspicion that the general environment and the somewhat unoptimized materials handling procedures might be responsible for the current variations in ribbon quality and that, therefore, continuous work with this furnace under rather more stringent environmental conditions and operating procedures could perhaps improve materials quality to some extent. The work on the multiple furnace was continued with two multiple growth runs being performed. In these runs, the melt replenishment system performed poorly and extensive modifications to it were designed to make reliable melt feeding for five ribbon growth possible. Additional characterization techniques for wide ribbons, stress measurements, and growth dynamics experiments are reported.

  4. Development and melt growth of novel scintillating halide crystals

    Science.gov (United States)

    Yoshikawa, Akira; Yokota, Yuui; Shoji, Yasuhiro; Kral, Robert; Kamada, Kei; Kurosawa, Shunsuke; Ohashi, Yuji; Arakawa, Mototaka; Chani, Valery I.; Kochurikhin, Vladimir V.; Yamaji, Akihiro; Andrey, Medvedev; Nikl, Martin

    2017-12-01

    Melt growth of scintillating halide crystals is reviewed. The vertical Bridgman growth technique is still considered as very popular method that enables production of relatively large and commercially attractive crystals. On the other hand, the micro-pulling-down method is preferable when fabrication of small samples, sufficient for preliminary characterization of their optical and/or scintillation performance, is required. Moreover, bulk crystal growth is also available using the micro-pulling-down furnace. The examples of growths of various halide crystals by industrially friendly melt growth techniques including Czochralski and edge-defined film-fed growth methods are also discussed. Finally, traveling molten zone growth that in some degree corresponds to horizontal zone melting is briefly overviewed.

  5. Defining Documentary Film

    DEFF Research Database (Denmark)

    Juel, Henrik

    2006-01-01

    A discussion of various attemts at defining documentary film regarding form, content, truth, stile, genre or reception - and a propoposal of a positive list of essential, but non-exclusive characteristica of documentary film......A discussion of various attemts at defining documentary film regarding form, content, truth, stile, genre or reception - and a propoposal of a positive list of essential, but non-exclusive characteristica of documentary film...

  6. Ge-on-Si films obtained by epitaxial growing: edge dislocations and their participation in plastic relaxation

    International Nuclear Information System (INIS)

    Bolkhovityanov, Yu B; Sokolov, L V

    2012-01-01

    Pure edge 90° misfit dislocations (MDs) are the most effective linear defects that combine the substrate and the film with different lattice parameters. A system consisting of a nonstressed film and a substrate approaches the perfect case in terms of the structural transition from one lattice parameter to the other if imperfections in the form of an ordered network of edge MDs are located exclusively at the interface, while threading dislocations are practically absent. The path to this perfect case goes through studying the possibilities of creating such an ordered network of edge MDs. The mechanism of formation of edge MDs proposed previously by Kvam et al (1990 J. Mater. Res. 5 1900) is discussed. This mechanism involves induced formation of a complementary pair of 60° MDs whose coalescence at the interface creates an edge MD. Some publications are presented, which demonstrate on the basis of experimental data that this mechanism under certain conditions can be the basic mechanism responsible for plastic relaxation of Ge-on-Si films. A cardinal method for decreasing the number of defects at the initial stages of growth of Ge/Si heterosystems is a set of procedures that allow a specified number of MDs to be inserted into the stressed film earlier than conditions of spontaneous nucleation of MDs from the film surface in the 2D–3D transition occur. When the low-temperature/high-temperature strategy of growth is used, the low-temperature GeSi seed layer tuned with respect to the growth temperature, composition and thickness can serve as a source of 60° dislocations, which facilitate earlier formation of edge MDs at the initial stage of plastic relaxation of the GeSi or Ge main layer. Results of some recent publications that report reaching high structural perfection of thin (∼1 µm and less) Ge-on-Si films are discussed. The proposed explanation of these results is based on postulates of controlled insertion of MDs and formation of edge MDs by the model of

  7. Direct Measurements of Island Growth and Step-Edge Barriers in Colloidal Epitaxy

    KAUST Repository

    Ganapathy, R.

    2010-01-21

    Epitaxial growth, a bottom-up self-assembly process for creating surface nano- and microstructures, has been extensively studied in the context of atoms. This process, however, is also a promising route to self-assembly of nanometer- and micrometer-scale particles into microstructures that have numerous technological applications. To determine whether atomic epitaxial growth laws are applicable to the epitaxy of larger particles with attractive interactions, we investigated the nucleation and growth dynamics of colloidal crystal films with single-particle resolution. We show quantitatively that colloidal epitaxy obeys the same two-dimensional island nucleation and growth laws that govern atomic epitaxy. However, we found that in colloidal epitaxy, step-edge and corner barriers that are responsible for film morphology have a diffusive origin. This diffusive mechanism suggests new routes toward controlling film morphology during epitaxy.

  8. Turbine Airfoil Leading Edge Film Cooling Bibliography: 1972–1998

    Directory of Open Access Journals (Sweden)

    D. M. Kercher

    2000-01-01

    Full Text Available Film cooling for turbine airfoil leading edges has been a common practice for at least 35 years as turbine inlet gas temperatures and pressures have continually increased along with cooling air temperatures for higher engine cycle efficiency. With substantial engine cycle performance improvements from higher gas temperatures, it has become increasingly necessary to film cool nozzle and rotor blade leading edges since external heat transfer coefficients and thus heat load are the highest in this airfoil region. Optimum cooling air requirements in this harsh environment has prompted a significant number of film cooling investigations and analytical studies reported over the past 25 years from academia, industry and government agencies. Substantial progress has been made in understanding the complex nature of leading edge film cooling from airfoil cascades, simulated airfoil leading edges and environment. This bibliography is a report of the open-literature references available which provide information on the complex aero–thermo interaction of leading edge gaseous film cooling with mainstream flow. From much of this investigative information has come successful operational leading edge film cooling design systems capable of sustaining airfoil leading edge durability in very hostile turbine environments.

  9. Toward Edge-Defined Holey Boron Nitride Nanosheets

    Science.gov (United States)

    Lin, Yi; Liao, Yunlong; Chen, Zhongfan; Connell, John W.

    2015-01-01

    "Holey" two-dimensional (2D) nanosheets with well-defined holy morphology and edge chemistry are highly desirable for applications such as energy storage, catalysis, sensing, transistors, and molecular transport/separation. For example, holey grapheme is currently under extensive investigation for energy storage applications because of the improvement in ion transport due to through the thickness pathways provided by the holes. Without the holes, the 2D materials have significant limitations for such applications in which efficient ion transport is important. As part of an effort to apply this approach to other 2D nanomaterials, a method to etch geometrically defined pits or holes on the basal plane surface of hexagonal boron nitride (h-BN) nanosheets has been developed. The etching, conducted via heating in ambient air using metal nanoparticles as catalysts, was facile, controllable, and scalable. Starting h-BN layered crystals were etched and subsequently exfoliated into boron nitride nanosheets (BNNSs). The as-etched and exfoliated h-BN nanosheets possessed defined pit and hole shapes that were comprised of regulated nanostructures at the edges. The current finding are the first step toward the bulk preparation of holey BNNSs with defined holes and edges.

  10. Surface preparation for the heteroepitactic growth of ceramic thin films

    International Nuclear Information System (INIS)

    Norton, M.G.; Summerfelt, S.R.; Carter, C.B.

    1990-01-01

    The morphology, composition, and crystallographic orientation of the substrate influence the nucleation and growth of deposited thin films. A method for the preparation of controlled, characteristic surfaces is reported. The surfaces are suitable for the heteroepitactic growth of thin films. When used in the formation of electron-transparent thin foils, the substrates can be used to investigate the very early stages of film growth using transmission electron microscopy. The substrate preparation involves the cleaning and subsequent annealing to generate a surface consisting of a series of steps. The step terraces are formed on the energetically stable surface, and controlled nucleation and growth of films at step edges is found. The substrate materials prepared using this technique include (001) MgO, (001) SrTiO 3 , and (001) LaAlO 3

  11. Increased kidney growth in formula-fed versus breast-fed healthy infants

    DEFF Research Database (Denmark)

    Schmidt, Ida M; Damgaard, Ida N; Boisen, Kirsten A

    2004-01-01

    versus breast feeding on kidney growth in a cohort of 631 healthy children examined at birth, and at 3 and 18 months of age. Kidney size was determined by ultrasonography and related to gender, age, body size, and feeding category (fully breast fed, partially breast fed, or fully formula fed at 3 months...

  12. Alignment of muscle precursor cells on the vertical edges of thick carbon nanotube films

    Energy Technology Data Exchange (ETDEWEB)

    Holt, Ian, E-mail: ian.holt@rjah.nhs.uk [Wolfson Centre for Inherited Neuromuscular Disease, RJAH Orthopaedic Hospital, Oswestry, Shropshire SY10 7AG (United Kingdom); Institute for Science and Technology in Medicine, Keele University, Keele, Staffordshire ST5 5BG (United Kingdom); Gestmann, Ingo, E-mail: Ingo.Gestmann@fei.com [FEI Europe B.V., Achtseweg Noord 5, 5651 Eindhoven (Netherlands); Wright, Andrew C., E-mail: a.wright@glyndwr.ac.uk [Advanced Materials Research Laboratory, Glyndwr University, Plas Coch, Mold Rd, Wrexham LL11 2AW (United Kingdom)

    2013-10-15

    The development of scaffolds and templates is an essential aspect of tissue engineering. We show that thick (> 0.5 mm) vertically aligned carbon nanotube films, made by chemical vapour deposition, can be used as biocompatible substrates for the directional alignment of mouse muscle cells where the cells grow on the exposed sides of the films. Ultra high resolution scanning electron microscopy reveals that the films themselves consist mostly of small diameter (10 nm) multi-wall carbon nanotubes of wavy morphology with some single wall carbon nanotubes. Our findings show that for this alignment to occur the nanotubes must be in pristine condition. Mechanical wiping of the films to create directional alignment is detrimental to directional bioactivity. Larger areas for study have been formed from a composite of multiply stacked narrow strips of nanotubes wipe-transferred onto elastomer supports. These composite substrates appear to show a useful degree of alignment of the cells. Highlights: • Highly oriented muscle precursor cells grown on edges of carbon nanotube pads • Mechanical treatment of nanotube pads highly deleterious to cell growth on edges • Larger areas created from wipe-transfer of narrow strips of nanotubes onto elastomer supports • Very high resolution SEM reveals clues to aligned cell growth.

  13. Alignment of muscle precursor cells on the vertical edges of thick carbon nanotube films

    International Nuclear Information System (INIS)

    Holt, Ian; Gestmann, Ingo; Wright, Andrew C.

    2013-01-01

    The development of scaffolds and templates is an essential aspect of tissue engineering. We show that thick (> 0.5 mm) vertically aligned carbon nanotube films, made by chemical vapour deposition, can be used as biocompatible substrates for the directional alignment of mouse muscle cells where the cells grow on the exposed sides of the films. Ultra high resolution scanning electron microscopy reveals that the films themselves consist mostly of small diameter (10 nm) multi-wall carbon nanotubes of wavy morphology with some single wall carbon nanotubes. Our findings show that for this alignment to occur the nanotubes must be in pristine condition. Mechanical wiping of the films to create directional alignment is detrimental to directional bioactivity. Larger areas for study have been formed from a composite of multiply stacked narrow strips of nanotubes wipe-transferred onto elastomer supports. These composite substrates appear to show a useful degree of alignment of the cells. Highlights: • Highly oriented muscle precursor cells grown on edges of carbon nanotube pads • Mechanical treatment of nanotube pads highly deleterious to cell growth on edges • Larger areas created from wipe-transfer of narrow strips of nanotubes onto elastomer supports • Very high resolution SEM reveals clues to aligned cell growth

  14. One-dimensional in-plane edge domain walls in ultrathin ferromagnetic films

    Science.gov (United States)

    Lund, Ross G.; Muratov, Cyrill B.; Slastikov, Valeriy V.

    2018-03-01

    We study existence and properties of 1D edge domain walls in ultrathin ferromagnetic films with uniaxial in-plane magnetic anisotropy. In these materials, the magnetization vector is constrained to lie entirely in the film plane, with the preferred directions dictated by the magnetocrystalline easy axis. We consider magnetization profiles in the vicinity of a straight film edge oriented at an arbitrary angle with respect to the easy axis. To minimize the micromagnetic energy, these profiles form transition layers in which the magnetization vector rotates away from the direction of the easy axis to align with the film edge. We prove existence of edge domain walls as minimizers of the appropriate 1D micromagnetic energy functional and show that they are classical solutions of the associated Euler-Lagrange equation with a Dirichlet boundary condition at the edge. We also perform a numerical study of these 1D domain walls and uncover further properties of these domain wall profiles.

  15. Liquid phase epitaxial growth of heterostructured hierarchical MOF thin films

    KAUST Repository

    Chernikova, Valeriya

    2017-05-10

    Precise control of epitaxial growth of MOF-on-MOF thin films, for ordered hierarchical tbo-type structures is demonstrated. The heterostructured MOF thin film was fabricated by successful sequential deposition of layers from two different MOFs. The 2-periodic layers, edge-transitive 4,4-square lattices regarded as supermolecular building layers, were commendably cross-linked using a combination of inorganic/organic and organic pillars.

  16. Liquid phase epitaxial growth of heterostructured hierarchical MOF thin films

    KAUST Repository

    Chernikova, Valeriya; Shekhah, Osama; Spanopoulos, Ioannis; Trikalitis, Pantelis N.; Eddaoudi, Mohamed

    2017-01-01

    Precise control of epitaxial growth of MOF-on-MOF thin films, for ordered hierarchical tbo-type structures is demonstrated. The heterostructured MOF thin film was fabricated by successful sequential deposition of layers from two different MOFs. The 2-periodic layers, edge-transitive 4,4-square lattices regarded as supermolecular building layers, were commendably cross-linked using a combination of inorganic/organic and organic pillars.

  17. Advanced crystal growth techniques for thallium bromide semiconductor radiation detectors

    Science.gov (United States)

    Datta, Amlan; Becla, Piotr; Guguschev, Christo; Motakef, Shariar

    2018-02-01

    Thallium Bromide (TlBr) is a promising room-temperature radiation detector candidate with excellent charge transport properties. Currently, Travelling Molten Zone (TMZ) technique is widely used for growth of semiconductor-grade TlBr crystals. However, there are several challenges associated with this type of crystal growth process including lower yield, high thermal stress, and low crystal uniformity. To overcome these shortcomings of the current technique, several different crystal growth techniques have been implemented in this study. These include: Vertical Bridgman (VB), Physical Vapor Transport (PVT), Edge-defined Film-fed Growth (EFG), and Czochralski Growth (Cz). Techniques based on melt pulling (EFG and Cz) were demonstrated for the first time for semiconductor grade TlBr material. The viability of each process along with the associated challenges for TlBr growth has been discussed. The purity of the TlBr crystals along with its crystalline and electronic properties were analyzed and correlated with the growth techniques. Uncorrected 662 keV energy resolutions around 2% were obtained from 5 mm x 5 mm x 10 mm TlBr devices with virtual Frisch-grid configuration.

  18. Spatial characterization of the edge barrier in wide superconducting films

    Science.gov (United States)

    Sivakov, A. G.; Turutanov, O. G.; Kolinko, A. E.; Pokhila, A. S.

    2018-03-01

    The current-induced destruction of superconductivity is discussed in wide superconducting thin films, whose width is greater than the magnetic field penetration depth, in weak magnetic fields. Particular attention is paid to the role of the boundary potential barrier (the Bin-Livingston barrier) in critical state formation and detection of the edge responsible for this critical state with different mutual orientations of external perpendicular magnetic field and transport current. Critical and resistive states of the film were visualized using the space-resolving low-temperature laser scanning microscopy (LTLSM) method, which enables detection of critical current-determining areas on the film edges. Based on these observations, a simple technique was developed for investigation of the critical state separately at each film edge, and for the estimation of residual magnetic fields in cryostats. The proposed method only requires recording of the current-voltage characteristics of the film in a weak magnetic field, thus circumventing the need for complex LTLSM techniques. Information thus obtained is particularly important for interpretation of studies of superconducting film single-photon light emission detectors.

  19. Effects of substrate anisotropy and edge diffusion on submonolayer growth during molecular beam epitaxy: A Kinetic Monte Carlo study

    International Nuclear Information System (INIS)

    Devkota, J.; Shrestha, S.P.

    2007-12-01

    We have performed Kinetic Monte Carlo simulation work to study the effect of diffusion anisotropy, bonding anisotropy and edge diffusion on island formation at different temperatures during the sub-monolayer film growth in Molecular Beam Epitaxy. We use simple cubic solid on solid model and event based Bortz, Kalos and Labowitch (BKL) algorithm on the Kinetic Monte Carlo method to simulate the physical phenomena. We have found that the island morphology and growth exponent are found to be influenced by substrate anisotropy as well as edge diffusion, however they do not play a significant role in island elongation. The growth exponent and island size distribution are observed to be influenced by substrate anisotropy but are negligibly influenced by edge diffusion. We have found fractal islands when edge diffusion is excluded and compact islands when edge diffusion is included. (author)

  20. Effect of annealing ambient on anisotropic retraction of film edges during solid-state dewetting of thin single crystal films

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Gye Hyun; Thompson, Carl V., E-mail: cthomp@mit.edu [Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 01239 (United States); Ma, Wen [Department of Nuclear Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 01239 (United States); Yildiz, Bilge [Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 01239 (United States); Department of Nuclear Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 01239 (United States)

    2016-08-21

    During solid-state dewetting of thin single crystal films, film edges retract at a rate that is strongly dependent on their crystallographic orientations. Edges with kinetically stable in-plane orientations remain straight as they retract, while those with other in-plane orientations develop in-plane facets as they retract. Kinetically stable edges have retraction rates that are lower than edges with other orientations and thus determine the shape of the natural holes that form during solid-state dewetting. In this paper, measurements of the retraction rates of kinetically stable edges for single crystal (110) and (100) Ni films on MgO are presented. Relative retraction rates of kinetically stable edges with different crystallographic orientations are observed to change under different annealing conditions, and this accordingly changes the initial shapes of growing holes. The surfaces of (110) and (100) films were also characterized using low energy electron diffraction, and different surface reconstructions were observed under different ambient conditions. The observed surface structures were found to correlate with the observed changes in the relative retraction rates of the kinetically stable edges.

  1. Characteristics of Ti films for transition-edge sensor microcalorimeters

    International Nuclear Information System (INIS)

    Ukibe, M.; Koyanagi, M.; Ohkubo, M.; Pressler, H.; Kobayashi, N.

    1999-01-01

    We are developing X-ray microcalorimeters using superconducting transition-edge sensors (TESs), which can be operated at relatively high base temperatures of a 3 He cryostat. For this purpose, we have selected Ti films to be used as TESs. The Ti films were deposited on different substrates by RF-sputtering. It was found that the superconducting properties of the Ti films depended on Ar pressure, film thickness, and substrate surface roughness

  2. Passive films at the nanoscale

    International Nuclear Information System (INIS)

    Maurice, Vincent; Marcus, Philippe

    2012-01-01

    Highlights: ► Nanoscale data on growth, structure and local properties of passive films reviewed. ► Preferential role of defects of passive films on the corrosion resistance emphasized. ► Effect of grain boundaries on local electronic properties shown by new data. ► Use of atomistic modeling to test mechanistic hypotheses illustrated. - Abstract: The nanometer scale chemical and structural aspects of ultrathin oxide passive films providing self-protection against corrosion to metals and alloys in aqueous environments are reviewed. Data on the nucleation and growth of 2D anodic oxide films, details on the atomic structure and nanostructure of 3D passive films, the preferential role of surface step edges in dissolution in the passive state and the preferential role of grain boundaries of the passive films in passivity breakdown are presented. Future perspectives are discussed, and exemplified by new data obtained on the relationship between the nanostructure of oxide passive films and their local electronic properties. Atomistic corrosion modeling by ab initio density functional theory (DFT) is illustrated by the example of interactions of chloride ions with hydroxylated oxide surfaces, including the role of surface step edges. Data obtained on well-defined substrate surfaces with surface analytical techniques are emphasized.

  3. Characteristics of Ti films for transition-edge sensor microcalorimeters

    CERN Document Server

    Ukibe, M; Ohkubo, M; Pressler, H; Kobayashi, N

    1999-01-01

    We are developing X-ray microcalorimeters using superconducting transition-edge sensors (TESs), which can be operated at relatively high base temperatures of a sup 3 He cryostat. For this purpose, we have selected Ti films to be used as TESs. The Ti films were deposited on different substrates by RF-sputtering. It was found that the superconducting properties of the Ti films depended on Ar pressure, film thickness, and substrate surface roughness.

  4. A peek into the history of sapphire crystal growth

    Science.gov (United States)

    Harris, Daniel C.

    2003-09-01

    After the chemical compositions of sapphire and ruby were unraveled in the middle of the 19th century, chemists set out to grow artificial crystals of these valuable gemstones. In 1885 a dealer in Geneva began to sell ruby that is now believed to have been created by flame fusion. Gemnologists rapidly concluded that the stones were artificial, but the Geneva ruby stimulated A. V. L. Verneuil in Paris to develop a flame fusion process to produce higher quality ruby and sapphire. By 1900 there was brisk demand for ruby manufactured by Verneuil's method, even though Verneuil did not publicly announce his work until 1902 and did not publish details until 1904. The Verneuil process was used with little alteration for the next 50 years. From 1932-1953, S. K. Popov in the Soviet Union established a capability for manufacturing high quality sapphire by the Verneuil process. In the U.S., under government contract, Linde Air Products Co. implemented the Verneuil process for ruby and sapphire when European sources were cut off during World War II. These materials were essential to the war effort for jewel bearings in precision instruments. In the 1960s and 1970s, the Czochralski process was implemented by Linde and its successor, Union Carbide, to make higher crystal quality material for ruby lasers. Stimulated by a government contract for structural fibers in 1966, H. LaBelle invented edge-defined film-fed growth (EFG). The Saphikon company, which is currently owned by Saint-Gobain, evolved from this effort. Independently and simultaneously, Stepanov developed edge-defined film-fed growth in the Soviet Union. In 1967 F. Schmid and D. Viechnicki at the Army Materials Research Lab grew sapphire by the heat exchanger method (HEM). Schmid went on to establish Crystal Systems, Inc. around this technology. Rotem Industries, founded in Israel in 1969, perfected the growth of sapphire hemispheres and near-net-shape domes by gradient solidification. In the U.S., growth of near

  5. Dewetting at the edge of a thin NiO-film on Si by swift heavy ion irradiation

    International Nuclear Information System (INIS)

    Dautel, Knut; Ferhati, Redi; Bolse, Wolfgang

    2014-01-01

    We have investigated dewetting along a straight edge of a thin NiO-film on a Si-wafer induced by irradiation with 4.8 MeV/u Au-ions at room temperature. Both, the retreat of the edge as well as the opening and growth of circular holes in the film were monitored using our in-situ high resolution scanning electron microscope at the UNILAC accelerator at the Helmholtz Centre for Heavy Ion Research in Darmstadt. The “dewetting kinetics” (dependence of the retreated length and the hole radius on the ion fluence) are compared to previously published results on dewetting of poly-crystalline (Au) and glassy (polymer) films. In the present case the dewetting kinetics compare well with those observed for isothermal dewetting of the highly viscous polymer films, presumed that the role of time in thermally induced dewetting is taken over by the ion fluence in ion induced dewetting. Both, from the dewetting kinetics and the shape of the remaining NiO-traces in the dewetted area in front of the retreating edge, we conclude that the presently observed swift heavy ion induced dewetting occurs by interfacial slipping. It occurs in spatially and timely separated steps in the transiently molten single ion tracks, where the required reduction of the viscosity of NiO is achieved

  6. Dewetting at the edge of a thin NiO-film on Si by swift heavy ion irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Dautel, Knut; Ferhati, Redi; Bolse, Wolfgang, E-mail: w.bolse@ihfg.uni-stuttgart.de

    2014-01-01

    We have investigated dewetting along a straight edge of a thin NiO-film on a Si-wafer induced by irradiation with 4.8 MeV/u Au-ions at room temperature. Both, the retreat of the edge as well as the opening and growth of circular holes in the film were monitored using our in-situ high resolution scanning electron microscope at the UNILAC accelerator at the Helmholtz Centre for Heavy Ion Research in Darmstadt. The “dewetting kinetics” (dependence of the retreated length and the hole radius on the ion fluence) are compared to previously published results on dewetting of poly-crystalline (Au) and glassy (polymer) films. In the present case the dewetting kinetics compare well with those observed for isothermal dewetting of the highly viscous polymer films, presumed that the role of time in thermally induced dewetting is taken over by the ion fluence in ion induced dewetting. Both, from the dewetting kinetics and the shape of the remaining NiO-traces in the dewetted area in front of the retreating edge, we conclude that the presently observed swift heavy ion induced dewetting occurs by interfacial slipping. It occurs in spatially and timely separated steps in the transiently molten single ion tracks, where the required reduction of the viscosity of NiO is achieved.

  7. A simple model for quantifying the degree of layer-by-layer growth in low energy ion deposition of thin films

    International Nuclear Information System (INIS)

    Huhtamaeki, T.; Jahma, M.O.; Koponen, I.T.

    2007-01-01

    Layer-by-layer growth of thin films can be promoted by using low energy ion deposition (LEID) techniques. The basic process affecting the growth are often quite diverse, but often the ion impact induced inter layer mass transfer processes due to adatom insertion to lower step edges or pile-ups to step edges above dominate. In this paper we propose a simple phenomenological model which describes the growth of thin films in LEID under these conditions. The model makes possible to distinguish the dominant growth, the detection of the transition from the 3D growth to 2D growth, and it can be used to quantify the degree of layer-by-layer growth. The model contains only two parameters, which can be phenomenologically related to the properties of the bombarding ion beam

  8. The competitive growth of cubic domains in Ti(1-x)AlxN films studied by diffraction anomalous near-edge structure spectroscopy.

    Science.gov (United States)

    Pinot, Y; Tuilier, M-H; Pac, M-J; Rousselot, C; Thiaudière, D

    2015-11-01

    Titanium and aluminium nitride films deposited by magnetron sputtering generally grow as columnar domains made of oriented nanocrystallites with cubic or hexagonal symmetry depending on Al content, which are embedded in more disordered grain boundaries. The substitution of Al atoms for Ti in the cubic lattice of the films improves their resistance to wear and oxidation, allowing their use as protective coatings. Ti K-edge X-ray absorption spectroscopy, which probes both crystallized and more disordered grain boundaries, and X-ray diffraction anomalous fine structure, which is sensitive to short- and long-range order within a given crystallized domain, are carried out on a set of Ti(1-x)AlxN films deposited by magnetron sputtering on Si substrates. Attention is paid to the shape of the pre-edge region, which is sensitive to the symmetry of the site occupied by Ti atoms, either octahedral in face-centred-cubic Ti-rich (TiN, Ti0.54Al0.46N) samples or tetrahedral in hexagonal-close-packed Al-rich (Ti0.32Al0.68N) films. In order to obain information on the titanium environment in the well crystallized areas, subtraction of the smooth part of the energy-dependent structure factor for the Bragg reflections is applied to the pre-edge region of the diffraction anomalous data in order to restore their spectroscopic appearance. A flat pre-edge is related to the typical octahedral environment of Ti atoms for cubic reflections. The difference observed between pre-edge spectra associated with face-centred-cubic 200 and 111 Bragg reflections of Ti0.54Al0.46N is assigned to Ti enrichment of 111 large well ordered domains compared with the more disordered 200 ones. The sharp peak observed in the spectrum recorded from the hexagonal 002 peak of Ti0.32Al0.68N can be regarded as a standard for the pure tetrahedral Ti environment in hexagonal-close-packed nitride.

  9. Growth and luminescent properties of Yb3+--doped oxide single crystals for scintillator application

    International Nuclear Information System (INIS)

    Yoshikawa, A.; Ogino, H.; Shim, J.B.; Nikl, M.; Solovieva, N.; Fukuda, T.

    2004-01-01

    Rod-shaped (Lu 1-x Yb x ) 3 Al 5 O 12 with x=0.05, 0.15, 0.30 and (Y 1-x Yb x )AlO 3 with x=0.05, 0.10, 0.30 single crystals were grown by the micro-pulling-down method. Edge-defined film-fed growth method was used to prepare (Y 0.9 Yb 0.1 )VO 4 crystal, while Ca 8 (La 1.98 Yb 0.02 )(PO 4 ) 6 O 2 crystal was grown by the Czochralski method. Luminescence of these crystals was studied with main attention paid to the charge transfer emission of Yb 3+ . Temperature tuned decay times in the time scale of units--tens of nanosecond was measured as a feature possibly interesting for an application in scintillation detectors in positron emission tomography

  10. Tuning the sapphire EFG process to the growth of Al2O3/YAG/ZrO2:Y eutectic

    Science.gov (United States)

    Carroz, L.; Duffar, T.

    2018-05-01

    In this work, a model is proposed, in order to analytically study the working point of the Edge defined Film-fed Growth (EFG) pulling of crystal plates. The model takes into account the heat equilibrium at the interface and the pressure equilibrium across the meniscus. It is validated on an industrial device dedicated to the pulling of sapphire ribbons. Then, the model is applied to pulling ceramic alloy plates, of the ternary eutectic Al2O3/YAG/ZrO2:Y. This allowed understanding the experimental difficulties of pulling this new material and suggested improvements of the control software. From these results, pulling net shaped ceramic alloy plates was successful in the same industrial equipment as used for sapphire.

  11. Decade of PV Industry R and D Advances in Silicon Module Manufacturing

    Energy Technology Data Exchange (ETDEWEB)

    Symko-Davis, M.; Mitchell, R.L.; Witt, C.E.; Thomas, H.P. [National Renewable Energy Laboratory; King, R.[U.S. Department of Energy; Ruby, D.S. [Sandia National Laboratories

    2001-01-18

    The US Photovoltaic (PV) industry has made significant technical advances in crystalline silicon (Si) module manufacturing through the PV Manufacturing R and D Project during the past decade. Funded Si technologies in this project have been Czochralski, cast polycrystalline, edge-defined film-fed growth (EFG) ribbon, string ribbon, and Si-film. Specific R and D Si module-manufacturing categories that have shown technical growth and will be discussed are in crystal growth and processing, wafering, cell fabrication, and module manufacturing. These R and D advancements since 1992 have contributed to a 30% decrease in PV manufacturing costs and stimulated a sevenfold increase in PV production capacity.

  12. Growth of group III nitride films by pulsed electron beam deposition

    International Nuclear Information System (INIS)

    Ohta, J.; Sakurada, K.; Shih, F.-Y.; Kobayashi, A.; Fujioka, H.

    2009-01-01

    We have grown group III nitride films on Al 2 O 3 (0 0 0 1), 6H-SiC (0 0 0 1), and ZnO (0001-bar) substrates by pulsed electron beam deposition (PED) for the first time and investigated their characteristics. We found that c-plane AlN and GaN grow epitaxially on these substrates. It has been revealed that the growth of GaN on atomically flat 6H-SiC substrates starts with the three-dimensional mode and eventually changes into the two-dimensional mode. The GaN films exhibited strong near-band-edge emission in their room temperature photoluminescence spectra. We also found that the use of PED allows us to reduce the epitaxial growth temperature for GaN down to 200 deg. C. - Graphical abstract: We have grown group III nitride films by pulsed electron beam deposition (PED) and found that the films of group III nitrides grow epitaxially on 6H-SiC and Al 2 O 3 substrates. We also found that the use of PED allows us to reduce the epitaxial growth temperature for GaN down to 200 deg. C.

  13. Growth optimization and electronic structure of ultrathin CoO films on Ag(001): A LEED and photoemission study

    Science.gov (United States)

    Barman, Sukanta; Menon, Krishnakumar S. R.

    2018-04-01

    We present here a detailed growth optimization of CoO thin film on Ag(001) involving the effects of different growth parameters on the electronic structure. A well-ordered stoichiometric growth of 5 ML CoO film has been observed at 473 K substrate temperature and 1 × 10-6 mbar oxygen partial pressure. The growth at lower substrate temperature and oxygen partial pressure show non-stoichiometric impurity phases which have been investigated further to correlate the growth parameters with surface electronic structure. The coverage dependent valence band electronic structure of the films grown at optimized condition reveals the presence of interfacial states near the Fermi edge (EF) for lower film coverages. Presence of interfacial states in the stoichiometric films rules out their defect-induced origin. We argue that this is an intrinsic feature of transition metal monoxides like NiO, CoO, MnO in the low coverage regime.

  14. Film cooling adiabatic effectiveness measurements of pressure side trailing edge cooling configurations

    Directory of Open Access Journals (Sweden)

    R. Becchi

    2015-12-01

    Full Text Available Nowadays total inlet temperature of gas turbine is far above the permissible metal temperature; as a consequence, advanced cooling techniques must be applied to protect from thermal stresses, oxidation and corrosion the components located in the high pressure stages, such as the blade trailing edge. A suitable design of the cooling system for the trailing edge has to cope with geometric constraints and aerodynamic demands; state-of-the-art of cooling concepts often use film cooling on blade pressure side: the air taken from last compressor stages is ejected through discrete holes or slots to provide a cold layer between hot mainstream and the blade surface. With the goal of ensuring a satisfactory lifetime of blades, the design of efficient trailing edge film cooling schemes and, moreover, the possibility to check carefully their behavior, are hence necessary to guarantee an appropriate metal temperature distribution. For this purpose an experimental survey was carried out to investigate the film covering performance of different pressure side trailing edge cooling systems for turbine blades. The experimental test section consists of a scaled-up trailing edge model installed in an open loop suction type test rig. Measurements of adiabatic effectiveness distributions were carried out on three trailing edge cooling system configurations. The baseline geometry is composed by inclined slots separated by elongated pedestals; the second geometry shares the same cutback configuration, with an additional row of circular film cooling holes located upstream; the third model is equipped with three rows of in-line film cooling holes. Experiments have been performed at nearly ambient conditions imposing several blowing ratio values and using carbon dioxide as coolant in order to reproduce a density ratio close to the engine conditions (DR=1.52. To extend the validity of the survey a comparison between adiabatic effectiveness measurements and a prediction by

  15. Ion beam assisted film growth

    CERN Document Server

    Itoh, T

    2012-01-01

    This volume provides up to date information on the experimental, theoretical and technological aspects of film growth assisted by ion beams.Ion beam assisted film growth is one of the most effective techniques in aiding the growth of high-quality thin solid films in a controlled way. Moreover, ion beams play a dominant role in the reduction of the growth temperature of thin films of high melting point materials. In this way, ion beams make a considerable and complex contribution to film growth. The volume will be essential reading for scientists, engineers and students working in thi

  16. Solar technology assessment project. Volume 6: Photovoltaic technology assessment

    Science.gov (United States)

    Backus, C. E.

    1981-04-01

    Industrial production of photovoltaic systems and volume of sales are reviewed. Low cost silicon production techniques are reviewed, including the Czochralski process, heat exchange method, edge defined film fed growth, dentritic web growth, and silicon on ceramic process. Semicrystalline silicon, amorphous silicon, and low cost poly-silicon are discussed as well as advanced materials and concentrator systems. Balance of system components beyond those needed to manufacture the solar panels are included. Nontechnical factors are assessed. The 1986 system cost goals are briefly reviewed.

  17. Production of optically thin free-standing oil films from the edge of a rotating disc

    International Nuclear Information System (INIS)

    Cramer, J.G.; Burch, D.F.; Rodenberg, R.; Cramer, P.B.

    1980-01-01

    A method is described for forming thin free-standing oil films which are spun from the edge of a sharp-edged rotating disc. The films can be made thin enough to show strong optical interference colors when viewed in white light. The thinnest films have areal densities down to about 10 to 20 μgm/cm 2 . A stable roughly triangular film with an area of about 10 cm 2 and fairly uniform thickness can be readily produced. Much larger films having either greater thickness or less stability are also possible. Films have been produced both in air and in vacuum

  18. Site-selective photofragmentation of chlorinated polymeric films observed around the chlorine K-edge

    Energy Technology Data Exchange (ETDEWEB)

    Arantes, C., E-mail: csilva@inmetro.gov.br [Divisão de Metrologia de Materiais, Instituto Nacional de Metrologia, Qualidade e Tecnologia, Xerém 25250-020, Duque de Caxias, RJ (Brazil); Mendes, L.A.V. [Instituto de Física, Universidade Federal da Bahia, Ondina, 40210-340 Salvador, BA (Brazil); Pinho, R.R. [Departamento de Física-ICE, Universidade Federal de Juiz de Fora, Campus Universitário, 36036-330 Juiz de Fora, MG (Brazil); Ferreira, M. [PEMM/COPPE, Universidade Federal do Rio de Janeiro, Cidade Universitária, Ilha do Fundão, 21941-972 Rio de Janeiro, RJ (Brazil); Souza, G.G.B. de; Rocha, A.B.; Rocco, M.L.M. [Instituto de Química, Universidade Federal do Rio de Janeiro, Cidade Universitária, Ilha do Fundão, 21941-909 Rio de Janeiro, RJ (Brazil)

    2013-03-29

    Highlights: ► PVC and PVDC were studied by PSID and NEXAFS techniques at the Chlorine 1s-edge. ► PVC film presented isotope ratio of 3:1 in the PSID spectrum. ► Cl{sup +} ion yield curves reproduce the photoabsorption spectrum for both polymers. ► Site-selectivity of C–Cl bond breaking due to an efficient spectator Auger decay. - Abstract: Photon stimulated ion desorption (PSID) and Near-edge X-ray absorption fine structure (NEXAFS) studies have been performed on poly(vinyl chloride) (PVC) and poly(vinyl dichloride) (PVDC) around the chlorine 1s-edge. Experiments were performed using a synchrotron source operating in the single-bunch mode and a time-of-flight mass spectrometry for ion analysis. Cl{sup +} ion yields, as a function of the photon energy, reproduce the photoabsorption spectrum, showing significant increase at the 1s-resonance. Edge-jump ratios, defined as the ratio between edge-jumps (intensity ratio of the yields between above and below the absorption edge) of two different transitions, for Cl{sup +} ion yields were much higher than the equivalent electron yields, indicating site-selectivity in C–Cl bond breaking for both polymers, as a result of efficient spectator Auger decay. The expected isotope ratio of 3:1 for chlorine was measured for PVC. The interpretation of the NEXAFS spectrum was assisted by quantum mechanical calculations at a multireference perturbation theory level.

  19. Knife-edge thin film field emission cathodes

    International Nuclear Information System (INIS)

    Lee, B.; Demroff, H.P.; Drew, M.M.; Elliott, T.S.; Mazumdar, T.K.; McIntyre, P.M.; Pang, Y.; Smith, D.D.; Trost, H.J.

    1993-01-01

    Cathodes made of thin-film field emission arrays (FEA) have the advantages of high current density, pulsed emission, and low bias voltage operation. The authors have developed a technology to fabricate knife-edge field emission cathodes on (110) silicon wafers. The emitter geometry is optimized for efficient modulation at high frequency. Cathode fabrication progress and preliminary analysis of their applications in RF power sources are presented

  20. X-ray absorption near-edge structure of hexagonal ternary phases in sputter-deposited TiAlN films

    Energy Technology Data Exchange (ETDEWEB)

    Gago, R., E-mail: rgago@icmm.csic.es [Instituto de Ciencia de Materiales de Madrid, Consejo Superior de Investigaciones Científicas, E-28049 Madrid (Spain); Soldera, F. [Department of Materials Science and Engineering, Saarland University, D-66123 Saarbruecken (Germany); Hübner, R.; Lehmann, J.; Munnik, F. [Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, D-01314 Dresden (Germany); Vázquez, L. [Instituto de Ciencia de Materiales de Madrid, Consejo Superior de Investigaciones Científicas, E-28049 Madrid (Spain); Redondo-Cubero, A. [Instituto Tecnológico e Nuclear, Instituto Superior Técnico, Universidade Técnica de Lisboa, 2686-953 Sacavém (Portugal); Endrino, J.L. [Instituto de Ciencia de Materiales de Madrid, Consejo Superior de Investigaciones Científicas, E-28049 Madrid (Spain); Abengoa Research S.L., c/Energía Solar 1, Palmas Altas, E-41014 Seville (Spain)

    2013-06-05

    Highlights: ► Growth of ternary TiAlN films with nearly single-phase wurzite structure. ► Soft X-rays XANES measurements of ternary TiAlN films with wurzite structure. ► Identification of ternary TiAlN hexagonal phases by XANES. ► Correlation of XANES measurements with reported theoretical calculations. -- Abstract: Titanium aluminium nitride (TiAlN) coatings have been grown by reactive (Ar/N{sub 2}) direct-current magnetron sputtering from a Ti{sub 50}Al{sub 50} compound target. The film composition has been quantified by ion beam analysis showing the formation of Al-rich nitrides (Ti/Al ∼ 0.3), with stoichiometric films for N{sub 2} contents in the gas mixture equal or above ∼25%. The surface morphology of the films has been imaged by atomic force microscopy, showing very smooth surfaces with roughness values below 2 nm. X-ray and electron diffraction patterns reveal that the films are nanocrystalline with a wurzite (w) structure of lattice parameters larger (∼2.5%) than those for w-AlN. The lattice expansion correlates with the Ti/Al ratio in stoichiometric films, which suggests the incorporation of Ti into w-AlN. The atomic environments around Ti, Al and N sites have been extracted from the X-ray absorption near-edge structure (XANES) by recording the Ti2p, Al1s and N1s edges, respectively. The analysis of the XANES spectral lineshape and comparison with reported theoretical calculations confirm the formation of a ternary hexagonal phase.

  1. Imposition of defined states of stress on thin films by a wafer-curvature method; validation and application to aging Sn films

    Energy Technology Data Exchange (ETDEWEB)

    Stein, J., E-mail: Jendrik.Stein@de.bosch.com [Max Planck Institute for Intelligent Systems (formerly Max Planck Institute for Metals Research), Heisenbergstr. 3, 70569 Stuttgart (Germany); Robert Bosch GmbH, Automotive Electronics/Engineering Assembly and Interconnect Technology (AE/EAI2), Robert-Bosch-Str. 2, 71701 Schwieberdingen (Germany); Pascher, M. [Institute for Materials Science, University of Stuttgart, Pfaffenwaldring 55, 70569 Stuttgart (Germany); Welzel, U. [Max Planck Institute for Intelligent Systems (formerly Max Planck Institute for Metals Research), Heisenbergstr. 3, 70569 Stuttgart (Germany); Huegel, W. [Robert Bosch GmbH, Automotive Electronics/Engineering Assembly and Interconnect Technology (AE/EAI2), Robert-Bosch-Str. 2, 71701 Schwieberdingen (Germany); Mittemeijer, E.J. [Max Planck Institute for Intelligent Systems (formerly Max Planck Institute for Metals Research), Heisenbergstr. 3, 70569 Stuttgart (Germany); Institute for Materials Science, University of Stuttgart, Pfaffenwaldring 55, 70569 Stuttgart (Germany)

    2014-10-01

    A wafer-curvature method has been developed to subject thin films, deposited on (Si) substrates, to well defined and controllable loads in a contact-free manner. To this end, a custom-made glass pan (i.e. a roof-less cylinder with a connection piece for vacuum tubes) connected to a needle valve, a vacuum pump and a pressure gauge has been used as an experimental setup. By fixing the coated Si wafer on top of the glass cylinder and evacuating the glass cylinder to a defined low-pressure, a state of stress is imposed in the thin film due to bending of the wafer. It has been shown that the (initial) stress state of a film and its change, due to its bending with the help of the wafer-curvature method, can be analyzed accurately close to the wafer center by application of one of two independent X-ray diffraction techniques: i) conventional X-ray diffraction stress analysis (i.e. application of the well known sin{sup 2}ψ-method) to reflections originating from the film and ii) determination of the radii of curvature by rocking curve measurements utilizing reflections originating from the substrate. The validation of this stress-imposition method has been carried out with a tungsten film of 500 nm thickness, since tungsten is known to be (practically) intrinsically elastically isotropic. Further, the method has been applied to an electro-deposited, potentially whiskering, aging Sn film of 3 μm thickness where a combination of both stress-measurement techniques is essential for the determination of initial and (by wafer bending) imposed stresses. The results of the aging experiment of the Sn film under load have been discussed with respect to the current whisker-growth model. - Highlights: • A wafer-curvature method has been developed to subject thin films to defined loads. • Two X-ray diffraction techniques were employed for the analysis of stresses. • The wafer-curvature method was validated by application to a W film. • Application to a potentially whiskering

  2. Imposition of defined states of stress on thin films by a wafer-curvature method; validation and application to aging Sn films

    International Nuclear Information System (INIS)

    Stein, J.; Pascher, M.; Welzel, U.; Huegel, W.; Mittemeijer, E.J.

    2014-01-01

    A wafer-curvature method has been developed to subject thin films, deposited on (Si) substrates, to well defined and controllable loads in a contact-free manner. To this end, a custom-made glass pan (i.e. a roof-less cylinder with a connection piece for vacuum tubes) connected to a needle valve, a vacuum pump and a pressure gauge has been used as an experimental setup. By fixing the coated Si wafer on top of the glass cylinder and evacuating the glass cylinder to a defined low-pressure, a state of stress is imposed in the thin film due to bending of the wafer. It has been shown that the (initial) stress state of a film and its change, due to its bending with the help of the wafer-curvature method, can be analyzed accurately close to the wafer center by application of one of two independent X-ray diffraction techniques: i) conventional X-ray diffraction stress analysis (i.e. application of the well known sin 2 ψ-method) to reflections originating from the film and ii) determination of the radii of curvature by rocking curve measurements utilizing reflections originating from the substrate. The validation of this stress-imposition method has been carried out with a tungsten film of 500 nm thickness, since tungsten is known to be (practically) intrinsically elastically isotropic. Further, the method has been applied to an electro-deposited, potentially whiskering, aging Sn film of 3 μm thickness where a combination of both stress-measurement techniques is essential for the determination of initial and (by wafer bending) imposed stresses. The results of the aging experiment of the Sn film under load have been discussed with respect to the current whisker-growth model. - Highlights: • A wafer-curvature method has been developed to subject thin films to defined loads. • Two X-ray diffraction techniques were employed for the analysis of stresses. • The wafer-curvature method was validated by application to a W film. • Application to a potentially whiskering Sn

  3. Near band edge emission characteristics of sputtered nano-crystalline ZnO films

    International Nuclear Information System (INIS)

    Kunj, Saurabh; Sreenivas, K.

    2016-01-01

    Sputtered zinc oxide (ZnO) thin films deposited on unheated glass substrate under different sputtering gas mixtures (Ar+O_2) have been investigated using X-ray diffraction and photo luminescence spectroscopy. Earlier reported studies on ZnO films prepared by different techniques exhibit either a sharp/broad near band edge (NBE) emission peak depending on the crystalline quality of the film. In the present study zinc oxide films, grown on unheated substrates, are seen to possess a preferred (002) orientation with a microstructure consisting of clustered nano-sized crystallites. The splitting in the near band edge emission (NBE) into three characteristic peaks is attributed to quantum confinement effect, and is observed specifically under an excitation of 270 nm. Deep level emission (DLE) in the range 400 to 700 nm is not observed indicating absence of deep level radiative defects.

  4. Near band edge emission characteristics of sputtered nano-crystalline ZnO films

    Science.gov (United States)

    Kunj, Saurabh; Sreenivas, K.

    2016-05-01

    Sputtered zinc oxide (ZnO) thin films deposited on unheated glass substrate under different sputtering gas mixtures (Ar+O2) have been investigated using X-ray diffraction and photo luminescence spectroscopy. Earlier reported studies on ZnO films prepared by different techniques exhibit either a sharp/broad near band edge (NBE) emission peak depending on the crystalline quality of the film. In the present study zinc oxide films, grown on unheated substrates, are seen to possess a preferred (002) orientation with a microstructure consisting of clustered nano-sized crystallites. The splitting in the near band edge emission (NBE) into three characteristic peaks is attributed to quantum confinement effect, and is observed specifically under an excitation of 270 nm. Deep level emission (DLE) in the range 400 to 700 nm is not observed indicating absence of deep level radiative defects.

  5. Near band edge emission characteristics of sputtered nano-crystalline ZnO films

    Energy Technology Data Exchange (ETDEWEB)

    Kunj, Saurabh; Sreenivas, K. [Department of Physics & Astrophysics, University of Delhi, Delhi 110007 INDIA (India)

    2016-05-06

    Sputtered zinc oxide (ZnO) thin films deposited on unheated glass substrate under different sputtering gas mixtures (Ar+O{sub 2}) have been investigated using X-ray diffraction and photo luminescence spectroscopy. Earlier reported studies on ZnO films prepared by different techniques exhibit either a sharp/broad near band edge (NBE) emission peak depending on the crystalline quality of the film. In the present study zinc oxide films, grown on unheated substrates, are seen to possess a preferred (002) orientation with a microstructure consisting of clustered nano-sized crystallites. The splitting in the near band edge emission (NBE) into three characteristic peaks is attributed to quantum confinement effect, and is observed specifically under an excitation of 270 nm. Deep level emission (DLE) in the range 400 to 700 nm is not observed indicating absence of deep level radiative defects.

  6. Unusual near-band-edge photoluminescence at room temperature in heavily-doped ZnO:Al thin films prepared by pulsed laser deposition

    International Nuclear Information System (INIS)

    Mohanty, Bhaskar Chandra; Yeon, Deuk Ho; Das, Sachindra Nath; Kwak, Ji Hye; Yoon, Kyung Hoon; Cho, Yong Soo

    2013-01-01

    Room temperature photoluminescence (PL) properties of heavily-doped ZnO:Al thin films (with carrier concentration n in the range of 5–20 × 10 20 cm −3 ) prepared by pulsed laser deposition have been investigated. Despite their high carrier concentration, the films exhibited strong room temperature near-band-edge bound excitons at ∼3.34 eV and an unusual peak at ∼3.16 eV, and negligible deep-level emission even for the films deposited at a temperature as low as 25 °C. The radiative efficiency of the films increased with growth temperature as a result of increased n and improved crystallinity. A large blue shift of optical band gap was observed, which is consistent with the n-dependent Burstein–Moss and band gap-renormalization effects. Comparison of the results of the PL and optical measurements revealed a large Stokes shift that increased with increase in n. It has been explained by a model based on local potential fluctuations caused by randomly-distributed doping impurities. - Highlights: • Studied PL properties of heavily-doped ZnO:Al films grown by PLD. • Unusual strong near-band-edge emissions and negligible deep-level emission at RT. • Increased optical band gap with growth temperature and thus carrier concentration. • Stokes shift and PL peak width increased with carrier concentration. • Results explained by a model based on local potential fluctuations

  7. Morphology and grain structure evolution during epitaxial growth of Ag films on native-oxide-covered Si surface

    International Nuclear Information System (INIS)

    Hur, Tae-Bong; Kim, Hong Koo; Perello, David; Yun, Minhee; Kulovits, Andreas; Wiezorek, Joerg

    2008-01-01

    Epitaxial nanocrystalline Ag films were grown on initially native-oxide-covered Si(001) substrates using radio-frequency magnetron sputtering. Mechanisms of grain growth and morphology evolution were investigated. An epitaxially oriented Ag layer (∼5 nm thick) formed on the oxide-desorbed Si surface during the initial growth phase. After a period of growth instability, characterized as kinetic roughening, grain growth stagnation, and increase of step-edge density, a layer of nanocrystalline Ag grains with a uniform size distribution appeared on the quasi-two-dimensional layer. This hierarchical process of film formation is attributed to the dynamic interplay between incoming energetic Ag particles and native oxide. The cyclic interaction (desorption and migration) of the oxide with the growing Ag film is found to play a crucial role in the characteristic evolution of grain growth and morphology change involving an interval of grain growth stagnation

  8. Growth Performance and Hematological Traits of Weaner Pigs Fed ...

    African Journals Online (AJOL)

    Sixty Weaner pigs with an average initial live weight of 6.81 ± 1.0kg were studied for their growth and haematological parameters when fed graded levels of raw bambara waste (BW) using a completely randomized design (CRD). They were fed five diets containing 0, 25, 50, 75 and 100 percentage composition for 5 months ...

  9. Optical constants and band edge of amorphous zinc oxide thin films

    International Nuclear Information System (INIS)

    Khoshman, Jebreel M.; Kordesch, Martin E.

    2007-01-01

    The optical characteristics of amorphous zinc oxide (a-ZnO) thin films grown by radio frequency reactive magnetron sputtering on various substrates at temperature -8 -0.32, respectively. The band edge of the films on Si (100) and quartz has been determined by spectroscopic ellipsometry (3.39 ± 0.05 eV) and spectrophotometric (3.35 ± 0.05 eV) methods, respectively. From the angle dependence of the p-polarized reflectivity we deduce a Brewster angle of 60.5 deg. Measurement of the polarized optical properties shows a high transmissivity (81%-99%) and low absorptivity (< 5%) in the visible and near infrared regions at different angles of incidence. Also, we found that there was a higher absorptivity for wavelength < 370 nm. This wavelength, ∼ 370 nm, therefore indicated that the band edge for a-ZnO thin films is about 3.35 eV

  10. Evaluation of bulk and surfaces absorption edge energy of sol-gel-dip-coating SnO2 thin films

    Directory of Open Access Journals (Sweden)

    Emerson Aparecido Floriano

    2010-12-01

    Full Text Available The absorption edge and the bandgap transition of sol-gel-dip-coating SnO2 thin films, deposited on quartz substrates, are evaluated from optical absorption data and temperature dependent photoconductivity spectra. Structural properties of these films help the interpretation of bandgap transition nature, since the obtained nanosized dimensions of crystallites are determinant on dominant growth direction and, thus, absorption energy. Electronic properties of the bulk and (110 and (101 surfaces are also presented, calculated by means of density functional theory applied to periodic calculations at B3LYP hybrid functional level. Experimentally obtained absorption edge is compared to the calculated energy band diagrams of bulk and (110 and (101 surfaces. The overall calculated electronic properties in conjunction with structural and electro-optical experimental data suggest that the nature of the bandgap transition is related to a combined effect of bulk and (101 surface, which presents direct bandgap transition.

  11. Edge-closed laminated structures for thin-film heads

    Science.gov (United States)

    Herman, D. A.; Argyle, B. E.; Lee, H.-P.; Trouilloud, P. O.; Petek, B.

    1991-04-01

    Magnetic film laminations containing nonmagnetic spacers have been explored with the hope of eliminating domain walls to diminish Barkhausen instabilities. Such laminates have limitations however, which originate in their ``edge-curling walls'' (ECWs).1 We have developed a new structure, free of ECWs, in which flux closure at opposing edges occurs via edge-shorting material added to circulate the easy-axis flux of the flat layers. We show experimentally with Kerr-effect imaging that (1) this edge-closed laminated (ECL) structure can support an (ECW-free) ``easy-axis'' (EA) magnetic state under conditions as modeled recently by Slonczewski,2 and (2) that this EA state is quite robust in the face of imperfect structure fabrication. This is, if the imperfections are not too severe, the resultant states depart minimally from the pure EA state and conduct hard-axis-driven flux nearly as well. Flat-film ECL elements in diamond, stripe, and recording-head-yoke shapes, plus experimental heads with ECL top yokes, were fabricated. Our domain images verify some key predictions from Slonczewski's static equilibrium modeling; additional results taken in applied magnetic fields extend the micromagnetic understanding. The sketch shows a typical domain pattem for a yoke-shaped element. The most stable state in the open portion of the yoke is the single domain shown. This remanent pattern was stable in the face of (slowly varying) external fields up to the 150 Oe that could be applied. The pole tip region contained a few 180° walls as indicated. On close inspection, these walls were seen to end in vestigial, nontouching, closure domains as predicted by the model when only partial flux closure occurs via the edge shorting material. The wall spacing in the tip varied somewhat following saturation-demagnetization cycles. The dynamic stability of this EA state was investigated in the experimental heads having ECL top yokes. The pseudodynamic LAMOM technique3 was applied using ``write

  12. Ellipsometry of anodic film growth

    Energy Technology Data Exchange (ETDEWEB)

    Smith, C.G.

    1978-08-01

    An automated computer interpretation of ellisometer measurements of anodic film growth was developed. Continuous mass and charge balances were used to utilize more fully the time dependence of the ellipsometer data and the current and potential measurements. A multiple-film model was used to characterize the growth of films which proceeds via a dissolution--precipitation mechanism; the model also applies to film growth by adsorption and nucleation mechanisms. The characteristic parameters for film growth describe homogeneous and heterogeneous crystallization rates, film porosities and degree of hydration, and the supersaturation of ionic species in the electrolyte. Additional descriptions which may be chosen are patchwise film formation, nonstoichiometry of the anodic film, and statistical variations in the size and orientation of secondary crystals. Theories were developed to describe the optical effects of these processes. An automatic, self-compensating ellipsometer was used to study the growth in alkaline solution of anodic films on silver, cadmium, and zinc. Mass-transport conditions included stagnant electrolyte and forced convection in a flow channel. Multiple films were needed to characterize the optical properties of these films. Anodic films grew from an electrolyte supersatuated in the solution-phase dissolution product. The degree of supersaturation depended on transport conditions and had a major effect on the structure of the film. Anodic reaction rates were limited by the transport of charge carriers through a primary surface layer. The primary layers on silver, zinc, and cadmium all appeared to be nonstoichiometric, containing excess metal. Diffusion coefficients, transference numbers, and the free energy of adsorption of zinc oxide were derived from ellipsometer measurements. 97 figures, 13 tables, 198 references.

  13. Calibrated Multi-Temporal Edge Images for City Infrastructure Growth Assessment and Prediction

    Science.gov (United States)

    Al-Ruzouq, R.; Shanableh, A.; Boharoon, Z.; Khalil, M.

    2018-03-01

    Urban Growth or urbanization can be defined as the gradual process of city's population growth and infrastructure development. It is typically demonstrated by the expansion of a city's infrastructure, mainly development of its roads and buildings. Uncontrolled urban Growth in cities has been responsible for several problems that include living environment, drinking water, noise and air pollution, waste management, traffic congestion and hydraulic processes. Accurate identification of urban growth is of great importance for urban planning and water/land management. Recent advances in satellite imagery, in terms of improved spatial and temporal resolutions, allows for efficient identification of change patterns and the prediction of built-up areas. In this study, two approaches were adapted to quantify and assess the pattern of urbanization, in Ajman City at UAE, during the last three decades. The first approach relies on image processing techniques and multi-temporal Landsat satellite images with ground resolution varying between 15 to 60 meters. In this approach, the derived edge images (roads and buildings) were used as the basis of change detection. The second approach relies on digitizing features from high-resolution images captured at different years. The latest approach was adopted, as a reference and ground truth, to calibrate extracted edges from Landsat images. It has been found that urbanized area almost increased by 12 folds during the period 1975-2015 where the growth of buildings and roads were almost parallel until 2005 when the roads spatial expansion witnessed a steep increase due to the vertical expansion of the City. Extracted Edges features, were successfully used for change detection and quantification in term of buildings and roads.

  14. Growth curves and their implications in hand-fed Monk parrots (Myiopsitta monachus

    Directory of Open Access Journals (Sweden)

    Petzinger C

    2015-10-01

    Full Text Available Christina Petzinger,1,2 J Jill Heatley,3 John E Bauer1,2 1Comparative Animal Nutrition Research Laboratory, Department of Small Animal Clinical Sciences, College of Veterinary Medicine and Biomedical Sciences, 2Intercollegiate Faculty of Nutrition, Texas A&M University, 3Zoological Medicine Service, Department of Small Animal Medicine and Surgery, College of Veterinary Medicine and Biomedical Sciences, Texas A&M University, College Station, TX, USA Abstract: Monk parrots (Myiopsitta monachus were hand-fed over two chick seasons spanning of 2010 to 2011. Information from the growth curve of chicks hand-fed in 2010 was used to develop a feeding protocol for the 2011 season (Protocol-2011. This protocol addressed the problems of delayed followed by excessive growth experienced by parrots hand fed in 2010. Monk parrots that were hand-fed in 2011 following the new protocol experienced delayed growth after 20 days of age. However, some Monk parrots were fed in excess of Protocol-2011 and did not experience a major delay in growth. The energy requirement equations used to construct Protocol-2011 were low when compared to adult Monk parrot maintenance energy requirements. The data suggest that growing birds do not require approximately twice their adult maintenance energy requirements, as is the case for growing dogs. Additionally, there appear to be fluctuations in energy needs as Monk parrots grow. A major increase in energy needs occurred between days 18 and 23 posthatching, which corresponds to feather development and growth in Monk parrot chicks. Thus, multiple equations estimating energy requirements, rather than just one equation, are likely needed from hatching to fledging in order to ensure adequate energy is provided to chicks. More research on the energy requirements of growing Monk parrots, especially around the time of fledging and weaning, is needed to improve hand-fed methods and potentially the adult health of hand-fed birds. Keywords

  15. Electronic-Reconstruction-Enhanced Tunneling Conductance at Terrace Edges of Ultrathin Oxide Films.

    Science.gov (United States)

    Wang, Lingfei; Kim, Rokyeon; Kim, Yoonkoo; Kim, Choong H; Hwang, Sangwoon; Cho, Myung Rae; Shin, Yeong Jae; Das, Saikat; Kim, Jeong Rae; Kalinin, Sergei V; Kim, Miyoung; Yang, Sang Mo; Noh, Tae Won

    2017-11-01

    Quantum mechanical tunneling of electrons across ultrathin insulating oxide barriers has been studied extensively for decades due to its great potential in electronic-device applications. In the few-nanometers-thick epitaxial oxide films, atomic-scale structural imperfections, such as the ubiquitously existed one-unit-cell-high terrace edges, can dramatically affect the tunneling probability and device performance. However, the underlying physics has not been investigated adequately. Here, taking ultrathin BaTiO 3 films as a model system, an intrinsic tunneling-conductance enhancement is reported near the terrace edges. Scanning-probe-microscopy results demonstrate the existence of highly conductive regions (tens of nanometers wide) near the terrace edges. First-principles calculations suggest that the terrace-edge geometry can trigger an electronic reconstruction, which reduces the effective tunneling barrier width locally. Furthermore, such tunneling-conductance enhancement can be discovered in other transition metal oxides and controlled by surface-termination engineering. The controllable electronic reconstruction can facilitate the implementation of oxide electronic devices and discovery of exotic low-dimensional quantum phases. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  16. A preliminary study on growth response of broiler finishers fed ...

    African Journals Online (AJOL)

    A preliminary study on growth response of broiler finishers fed processed mottle Mucuna beans ( Mucuna pruriens var. utilis ) ... They were fed diets (20% CP, 13 MJME/kg) incorporating 0%, 5% and 10% processed mottle “Mucuna” beans. A completely randomized design was used. Feed and water were supplied and ...

  17. Understanding the shrinkage of optical absorption edges of nanostructured Cd-Zn sulphide films for photothermal applications

    Energy Technology Data Exchange (ETDEWEB)

    Hossain, Md. Sohrab [Department of Physics, Jahangirnagar University, Savar, Dhaka 1342 (Bangladesh); Kabir, Humayun [Department of Physics, Jahangirnagar University, Savar, Dhaka 1342 (Bangladesh); School of Metallurgy and Materials, University of Birmingham, Edgbaston, Birmingham B15 2TT (United Kingdom); Rahman, M. Mahbubur, E-mail: M.Rahman@Murdoch.edu.au [Department of Physics, Jahangirnagar University, Savar, Dhaka 1342 (Bangladesh); Surface Analysis and Materials Engineering Research Group, School of Engineering & Information Technology, Murdoch University, Perth, Western Australia 6150 (Australia); Hasan, Kamrul [Department of Chemistry, College of Sciences, University of Sharjah, P.O. Box 27272, Sharjah (United Arab Emirates); Bashar, Muhammad Shahriar; Rahman, Mashudur [Institute of Fuel and Research Development, Bangladesh Council for Scientific and Industrial Research, Dhanmondi, Dhaka (Bangladesh); Gafur, Md. Abdul [Pilot Plant and Process Development Center, Bangladesh Council for Scientific and Industrial Research, Dhanmondi, Dhaka (Bangladesh); Islam, Shariful [Department of Physics, Comilla University, Comilla (Bangladesh); Amri, Amun [Department of Chemical Engineering, Universitas Riau, Pekanbaru (Indonesia); Jiang, Zhong-Tao [Surface Analysis and Materials Engineering Research Group, School of Engineering & Information Technology, Murdoch University, Perth, Western Australia 6150 (Australia); Altarawneh, Mohammednoor; Dlugogorski, Bogdan Z. [School of Engineering & Information Technology, Murdoch University, Murdoch, WA 6150 (Australia)

    2017-01-15

    Highlights: • Cd-Zn sulphide films synthesized via chemical bath deposition technique. • Nanocrystalline phase of Cd-Zn sulphide films were seen in XRD studies. • Nanocrystalline structures of the films were also confirmed by the SEM. • The band gap of these films is a combination of composition and size. • E{sub U} and σ studies ascribed the shrinkage of absorption edges around the optical band-gaps. - Abstract: In this article Cd-Zn sulphide thin films deposited onto soda lime glass substrates via chemical bath deposition (CBD) technique were investigated for photovoltaic applications. The synthesized films were investigated using X-ray diffraction (XRD), scanning electron microscopy (SEM), and ultraviolet visible (UV–vis) spectroscopic methodologies. A higher degree of crystallinity of the films was attained with the increase of film thicknesses. SEM micrographs exhibited a partial crystalline structure with a particulate appearance surrounded by the amorphous grain boundaries. The optical absorbance and absorption coefficient of the films were also enhanced significantly with the increase in film thicknesses. Optical band-gap analysis indicated a monotonic decrease in direct and indirect band-gaps with the increase of thicknesses of the films. The presence of direct and indirect transitional energies due to the exponential falling edges of the absorption curves may either be due to the lack of long-range order or to the existence of defects in the films. The declination of the optical absorption edges was also confirmed via Urbach energy and steepness parameters studies.

  18. Growth Performance and Hematological Traits of Weaner Pigs Fed ...

    African Journals Online (AJOL)

    BSN

    http://www.ajol.info/index.php/njb/index and ... for their growth and haematological parameters when fed graded levels of raw ... significant (P<0.05) differences among treatments in feed intake, weight gain, ... Keywords: Growth Performance, Bambara nut wastes, Weaner Pigs and ... waste used in the feeding of pigs (Okeke,.

  19. Measurement of quasiparticle transport in aluminum films using tungsten transition-edge sensors

    International Nuclear Information System (INIS)

    Yen, J. J.; Shank, B.; Cabrera, B.; Moffatt, R.; Redl, P.; Young, B. A.; Tortorici, E. C.; Brink, P. L.; Cherry, M.; Tomada, A.; Kreikebaum, J. M.

    2014-01-01

    We report on experimental studies of phonon sensors which utilize quasiparticle diffusion in thin aluminum films connected to tungsten transition-edge-sensors (TESs) operated at 35 mK. We show that basic TES physics and a simple physical model of the overlap region between the W and Al films in our devices enables us to accurately reproduce the experimentally observed pulse shapes from x-rays absorbed in the Al films. We further estimate quasiparticle loss in Al films using a simple diffusion equation approach. These studies allow the design of phonon sensors with improved performance.

  20. Growth and Reproduction of Artificially Fed Cnaphalocrocis medinalis

    Directory of Open Access Journals (Sweden)

    Jian XU

    2012-09-01

    Full Text Available The growth and reproduction of rice leaffolder, Cnaphalocrocis medinalis, fed on an artificial diet were studied. The results showed that the larvae were able to grow and pupate on the artificial diet. The durations of larvae and pupas of C. medinalis on the artificial diet were 28.1 d and 10.1 d, postponed 4.9 d and 1.7 d respectively, compared with those reared with rice leaves. The number of ovipositions was 41.6 per female, 26.2% higher than that fed on rice leaves. Survival rate curve of larvae was a descent function of mortality-age, with no significant differences from the curve of larvae fed on rice leaves. The net reproductive rate (Ro, intrinsic rate of increase (rm and finite rate of increase (λ of the population fed on diet were 17.6928, 0.0884 and 1.0924, respectively, and the mean generation time (T and double time (td were prolonged 4.9 d and 1.3 d in comparison with the treatment of rice leaves. Population trend index (I was 3.26, indicating a growing number of the population of C. medinalis fed on artificial diet.

  1. [Growth of breastfed and bottle-fed infants up to 2 years of age: CLACYD (Lactation, Alimentation, Growth and Development) study 1993-1995].

    Science.gov (United States)

    Agrelo, F; Lobo, B; Chesta, M; Berra, S; Sabulsky, J

    1999-07-01

    Studies done in various countries show important differences in the growth of breastfed and bottle-fed children. In addition, it has been found that breast-fed children grow more slowly beginning at the age of 2 or 3 months in comparison with the reference pattern of the U.S. National Center for Health Statistics (NCHS) and the World Health Organization (WHO). These results cast doubt on whether maximum growth is the same as optimal growth. The objective of this study was to compare the growth in weight and length, from birth to 24 months, for a group of children who were breast-fed with that of a group who were bottle-fed. The study was also intended to describe the growth of the breastfed group in relation to the NCHS/WHO norms and a WHO "12-month breast-fed pooled data set." For this research, data were analyzed from the "Cordoba: lactation, feeding, growth, and development" study (or CLACYD study, for its Spanish-language acronym). That study looked at a representative cohort, stratified by social class, of children born in 1993 in the city of Cordoba, Argentina. The researchers analyzed anthropometric data on 74 children who were breast-fed during the first year of life and on 108 bottle-fed children. The data had been recorded, using standardized techniques, at birth and at 6, 12, and 24 months of age. Both groups were homogenous with respect to the age and schooling of the parents, social stratum, birth order, maternal height, and child's weight and length at birth. The living conditions (housing construction and availability of water and sewer services) were better among the group that was bottle-fed (P = 0.04). The breast-fed children had a lower weight and a shorter length at 6, 12, and 24 months than did the bottle-fed children. The breast-fed children also showed a slowing in growth with respect to the NCHS/WHO guidelines beginning in the second semester. This indicates that the NCHS/WHO norms are not totally adequate for evaluating the growth of breast-fed

  2. Numerical study on film cooling and convective heat transfer characteristics in the cutback region of turbine blade trailing edge

    Directory of Open Access Journals (Sweden)

    Xie Yong-Hui

    2016-01-01

    Full Text Available Gas turbine blade trailing edge is easy to burn out under the exposure of high-temperature gas due to its thin shape. The cooling of this area is an important task in gas turbine blade design. The structure design and analysis of trailing edge is critical because of the complexity of geometry, arrangement of cooling channels, design requirement of strength, and the working condition of high heat flux. In the present paper, a 3-D model of the trailing edge cooling channel is constructed and both structures with and without land are numerically investigated at different blowing ratio. The distributions of film cooling effectiveness and convective heat transfer coefficient on cutback and land surface are analyzed, respectively. According to the results, it is obtained that the distributions of film cooling effectiveness and convective heat transfer coefficient both show the symmetrical characteristics as a result of the periodic structure of the trailing edge. The increase of blowing ratio significantly improves the film cooling effectiveness and convective heat transfer coefficient on the cutback surface, which is beneficial to the cooling of trailing edge. It is also found that the land structure is advantageous for enhancing the streamwise film cooling effectiveness of the trailing edge surface while the film cooling effectiveness on the land surface remains at a low level. Convective heat transfer coefficient exhibits a strong dependency with the blowing ratio, which suggests that film cooling effectiveness and convective heat transfer coefficient must be both considered and analyzed in the design of trailing edge cooling structure.

  3. Analyses of edge effects on residual stresses in film strip/substrate systems

    International Nuclear Information System (INIS)

    Hsueh, Chun-Hway

    2000-01-01

    The residual stress distribution in a thin-film strip overlaid on a substrate is influenced by the edges of the strip. An analytical model is developed to derive a closed-form solution for the stress distribution along the film width. Because the film is much thinner than the substrate, the stress variation through the film thickness is ignored; however, the stress variation through the substrate thickness is considered in the analysis. Compared to the existing analytical models, the present model is more rigorous and the analytical results agree better with both finite element results and experimental measurements. (c) 2000 American Institute of Physics

  4. Don't Let Asthma Define You: Sylvia Granados-Maready Uses Her Competitive Edge Against Condition

    Science.gov (United States)

    ... Define You Sylvia Granados-Maready uses her competitive edge against condition Photo: Kevin Gbolie When Sylvia Granados- ... she said. “If you’ve got that competitive edge, accept it but know your limits.” She let ...

  5. Improved interface growth and enhanced flux pinning in YBCO films deposited on an advanced IBAD-MgO based template

    Science.gov (United States)

    Khan, M. Z.; Zhao, Y.; Wu, X.; Malmivirta, M.; Huhtinen, H.; Paturi, P.

    2018-02-01

    The growth mechanism is studied from the flux pinning point of view in small-scale YBa2Cu3O6+x (YBCO) thin films deposited on a polycrystalline hastelloy with advanced IBAD-MgO based buffer layer architecture. When compared the situation with YBCO films grown on single crystal substrates, the most critical issues that affect the suitable defect formation and thus the optimal vortex pinning landscape, have been studied as a function of the growth temperature and the film thickness evolution. We can conclude that the best critical current property in a wide applied magnetic field range is observed in films grown at relatively low temperature and having intermediate thickness. These phenomena are linked to the combination of the improved interface growth, to the film thickness related crystalline relaxation and to the formation of linear array of edge dislocations that forms the low-angle grain boundaries through the entire film thickness and thus improve the vortex pinning properties. Hence, the optimized buffer layer structure proved to be particularly suitable for new coated conductor solutions.

  6. Construction of LDPC codes over GF(q) with modified progressive edge growth

    Institute of Scientific and Technical Information of China (English)

    CHEN Xin; MEN Ai-dong; YANG Bo; QUAN Zi-yi

    2009-01-01

    A parity check matrix construction method for constructing a low-density parity-check (LDPC) codes over GF(q) (q>2) based on the modified progressive edge growth (PEG) algorithm is introduced. First, the nonzero locations of the parity check matrix are selected using the PEG algorithm. Then the nonzero elements are defined by avoiding the definition of subcode. A proof is given to show the good minimum distance property of constructed GF(q)-LDPC codes. Simulations are also presented to illustrate the good error performance of the designed codes.

  7. Characterization of the adhesion of thin film by Cross-Sectional Nanoindentation. Analysis of the substrate edge chipping and the film delamination

    Science.gov (United States)

    Felder, Eric; Roy, Sébastien; Darque-Ceretti, Evelyne

    2011-07-01

    Cross-Sectional Nanoindentation (CSN) is a recent method for adhesion measurement of nanoscale thin films in Ultra-Large Scale Integrated circuits. In the case of ductile thin films, the motion of the substrate chip implies significant plastic deformation of the film and complex geometry of delaminated areas. This article recalls first the experimental procedure and the two main features observed in this test performed on various plane copper films deposited on silicon: the critical force producing silicon edge chipping increases linearly with the distance of the indenter to the interface; on the section the delaminated length of the film ( a-b) is proportional to the residual silicon chip displacement u and the ratio S=u/(a-b) depends on the manufacturing process of the film, and is so related to its adhesion to the substrate. One proposes a simple analysis of the silicon edge chipping. Then a model of pull-off of an elastic-strain hardening plastic film is developed, which suggests an explanation for the delamination process. Application of the model to experimental results starting from films plastic properties deduced from nanoindentation measurements provides plausible results. Some improvements for performing the CSN test are proposed in order to make easier its interpretation.

  8. Growth, food consumption, and energy status of juvenile pallid sturgeon fed natural or artificial diets

    Science.gov (United States)

    Meyer, Hilary A.; Chipps, Steven R.; Graeb, Brian D. S.; Klumb, Robert A.

    2016-01-01

    Stocking of hatchery-raised fish is an important part of the pallid sturgeon Scaphirhynchus albus recovery program. In the wild, juvenile pallid sturgeon consume primarily aquatic insects, although little is known about specific dietary needs. In hatchery settings, pallid sturgeon are fed commercial diets that are formulated for salmonids. To compare food consumption, growth, and energy status of pallid sturgeon fed artificial or natural diets, we conducted a laboratory study using 24 juvenile pallid sturgeon (initial fork length 153–236 mm). Pallid sturgeon were fed a daily ration of either commercial pellets (1 mm, slow sinking; 45% protein, 19% fat) or chironomid larvae for 5 wk. Natural-fed pallid sturgeon exhibited a greater specific growth rate (2.12% d−1) than pellet-fed fish (0.06% d−1). Similarly, relative condition was greater for natural-fed sturgeon (Kn = 1.11) than that observed for pellet-fed fish (Kn = 0.87). In contrast, the hepatosomatic index was significantly higher in pellet-fed fish (2.5%), indicating a high lipid diet compared with natural-fed sturgeon (1.4%). Given the importance of natural diets to fish digestion and growth, it is suggested that a more holistic approach be applied in the development of a practical diet for pallid sturgeon that incorporates attributes of natural prey.

  9. In-situ YBa2Cu3O7/SrTiO3/YBa2Cu3O7 a-b plane Josephson edge junctions

    International Nuclear Information System (INIS)

    Aharoni, E.; Koren, G.; Polturak, E.; Cohen, D.; Iskevitch, E.

    1992-01-01

    YBCO/SrTiO 3 /YBCO thin film edge junctions were prepared in-situ and characterized. The epitaxial growth of SrTiO 3 on YBCO led to a sharp and well defined junction edge with a very high yield. Typical junctions showed critical currents up to 83 K, with I c ∝ (1 - T/Tc) 2 temperature dependence. Sharp Shapiro steps were observed under microwave radiation at temperatures up to 82 K. A typical diffraction pattern was found in the voltage response of the junctions to transverse magnetic field. (orig.)

  10. Dietary inclusion of direct fed microbe on the growth performance of ...

    African Journals Online (AJOL)

    The birds were obtained from a reputable hatchery and randomly assigned to four dietary treatments, each with three replicate of ten birds. ... The results show that the growth performance of the broiler chicken fed diet containing different level of direct fed microbes did not differ significantly (P>0.05) in initial weight, final ...

  11. Edge printability: techniques used to evaluate and improve extreme wafer edge printability

    Science.gov (United States)

    Roberts, Bill; Demmert, Cort; Jekauc, Igor; Tiffany, Jason P.

    2004-05-01

    The economics of semiconductor manufacturing have forced process engineers to develop techniques to increase wafer yield. Improvements in process controls and uniformities in all areas of the fab have reduced film thickness variations at the very edge of the wafer surface. This improved uniformity has provided the opportunity to consider decreasing edge exclusions, and now the outermost extents of the wafer must be considered in the yield model and expectations. These changes have increased the requirements on lithography to improve wafer edge printability in areas that previously were not even coated. This has taxed all software and hardware components used in defining the optical focal plane at the wafer edge. We have explored techniques to determine the capabilities of extreme wafer edge printability and the components of the systems that influence this printability. We will present current capabilities and new detection techniques and the influence that the individual hardware and software components have on edge printability. We will show effects of focus sensor designs, wafer layout, utilization of dummy edge fields, the use of non-zero overlay targets and chemical/optical edge bead optimization.

  12. Red photoluminescence and band edge shift from ZnO thin films

    International Nuclear Information System (INIS)

    Marotti, Ricardo E.; Badan, Juan A.; Quagliata, Eduardo; Dalchiele, Enrique A.

    2007-01-01

    The red photoluminescence (PL) band (peaked between 610 and 640 nm) from electrochemically deposited ZnO thin films is studied. The absorption coefficient is obtained from diffuse reflectance measurements. The absorption band edge depends on deposition conditions. The PL peak follows the shift of the band edge. A similar correlation appears when cooling down to 20 K. This suggests that PL is due to a transition from an intrinsic shallow state to an intrinsic deep state. Comparing against ZnO samples showing green PL, the shallow nature of the state is confirmed

  13. Influence of substrate temperature, growth rate and TCO substrate on the properties of CSS deposited CdS thin films

    Energy Technology Data Exchange (ETDEWEB)

    Schaffner, J., E-mail: jschaffner@surface.tu-darmstadt.de; Feldmeier, E.; Swirschuk, A.; Schimper, H.-J.; Klein, A.; Jaegermann, W.

    2011-08-31

    The growth of CdS thin films by close space sublimation (CSS) has been systematically studied using an ultra-high vacuum system known as DAISY-SOL in order to understand the basic growth mechanisms and their impact on the film properties. Substrate temperature and deposition rate were varied, and the surface properties of the CdS layer were determined by photoelectron spectroscopy (XPS) without breaking the vacuum. To analyze the influence of the deposition conditions on the layer morphology and crystallographic structure, the films were further characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM) and atomic force microscopy (AFM). The SEM and AFM studies show a correlation between the deposition rate and the film morphology. For high deposition rates, edged grain shapes and smoother surfaces were observed than for low deposition rates. CdS films were deposited onto two different commercially available fluorine-doped tin oxide (FTO) substrates. XRD studies show that a high <200> texture of the FTO substrate prefers the CdS growth in <0001> orientation of the hexagonal crystal modification.

  14. Large-area graphene films by simple solution casting of edge-selectively functionalized graphite.

    Science.gov (United States)

    Bae, Seo-Yoon; Jeon, In-Yup; Yang, Jieun; Park, Noejung; Shin, Hyeon Suk; Park, Sungjin; Ruoff, Rodney S; Dai, Liming; Baek, Jong-Beom

    2011-06-28

    We report edge-selective functionalization of graphite (EFG) for the production of large-area uniform graphene films by simply solution-casting EFG dispersions in dichloromethane on silicon oxide substrates, followed by annealing. The resultant graphene films show ambipolar transport properties with sheet resistances of 0.52-3.11 kΩ/sq at 63-90% optical transmittance. EFG allows solution processing methods for the scalable production of electrically conductive, optically transparent, and mechanically robust flexible graphene films for use in practice.

  15. Surface smoothening effects on growth of diamond films

    Science.gov (United States)

    Reshi, Bilal Ahmad; Kumar, Shyam; Kartha, Moses J.; Varma, Raghava

    2018-04-01

    We have carried out a detailed study of the growth dynamics of the diamond film during initial time on diamond substrates. The diamond films are deposited using Microwave Plasma Chemical Vapor Deposition (MPCVD) method for different times. Surface morphology and its correlation with the number of hours of growth of thin films was invested using atomic force microscopy (AFM). Diamond films have smooth interface with average roughness of 48.6873nm. The initial growth dynamics of the thin film is investigated. Interestingly, it is found that there is a decrease in the surface roughness of the film. Thus a smoothening effect is observed in the grown films. The film enters into the growth regime in the later times. Our results also find application in building diamond detector.

  16. Thickness periodicity in the auger line shape from epitaxial (111)Cu films

    Energy Technology Data Exchange (ETDEWEB)

    Namba, Y; Vook, R W; Chao, S S

    1981-01-01

    The 61 eV MMM Cu Auger line doublet was recorded in the derivative mode as a function of thickness for epitaxial (111)Cu films approximately 1500 angstrom thick. The overlap of the doublet lines makes it possible to define a measure of the doublet profile called the ''R-factor'' as a ratio of the peak-to-peak heights of the small overlap oscillation to that of the major oscillation. To within the experimental error, it was found that the R-factor varies with a periodicity of approximately one monoatomic layer as the film thickens. Since these films grow by a layer growth mechaniism, the surface topography varies periodically with the number of monolayers deposited, going from a smooth to a rough to a smooth, etc. surface. It is believed that the occurrence of such a periodicity implies that there is a difference in the electronic structure at the surface of the flat areas of the film from that at the edges of monolayer high, flat islands. The amplitude of the oscillation in R is interpreted to be a measure of the relative amounts of edge area compared to flat area. These results show that it is possible to use Auger electron spectroscopy to monitor surface topography and the electronic structure changes that accompany the topographical changes occurring when epitaxial films grow by a layer growth mechanism.

  17. Controllable growth and characterization of highly aligned ZnO nanocolumnar thin films

    Energy Technology Data Exchange (ETDEWEB)

    Onuk, Zuhal [Department of Physics, Recep Tayyip Erdogan University, Rize, 53100 (Turkey); Department of Materials Science and Engineering, University of Delaware, Newark, DE, 19716 (United States); Rujisamphan, Nopporn [Nanoscience and Nanotechnology Graduate Program, Faculty of Science, King Mongkut’s University of Technology Thonburi, 10140, Bangkok (Thailand); Theoretical and Computational Science Center (TaCS), Faculty of Science, King Mongkut’s University of Technology Thonburi, Bangkok 10140 (Thailand); Murray, Roy [Department of Physics and Astronomy, University of Delaware, Newark, DE, 19716 (United States); Bah, Mohamed [Department of Materials Science and Engineering, University of Delaware, Newark, DE, 19716 (United States); Tomakin, Murat [Department of Physics, Recep Tayyip Erdogan University, Rize, 53100 (Turkey); Shah, S.Ismat, E-mail: ismat@udel.edu [Department of Materials Science and Engineering, University of Delaware, Newark, DE, 19716 (United States); Department of Physics and Astronomy, University of Delaware, Newark, DE, 19716 (United States)

    2017-02-28

    Graphical abstract: Scanning electron micrographs of the top view surfaces (left column) and cross sections of sputtered ZnO thin films prepared at various Ar:O{sub 2} ratios: (a) and (b) 10:0, (c) and (d) 7.5:2.5, (e) and (f) 5:5, (g) and (h) 2.5:7.5. - Highlights: • Nanocolumnar ZnO films were prepared by controlling the argon-oxygen sputtering gas ratio. • Oxygen partial pressure affects the band gap alignment of the ZnO films. • Optical transmission spectroscopy and XPS were used to study band gap shifts. - Abstract: We investigated the effects of growth conditions during magnetron sputtering on the structural, morphological, and optical properties of nanostructured ZnO thin films. Undoped ZnO thin films are deposited onto p-type Si (100) and corning 7059 glass substrates by RF magnetron sputtering using a ZnO target in combination with various Ar-O{sub 2} sputtering gas mixtures at room temperature. The effect of the partial pressure of oxygen on the morphology of ZnO thin film structure and band alignment were investigated. Thickness, and therefore the growth rate of the samples measured from the cross-sectional SEM micrographs, is found to be strongly correlated with the oxygen partial pressure in the sputtering chamber. The optical transmittance spectrometry results show that the absorption edge shifts towards the longer wavelength at higher oxygen partial pressure. X-ray photoelectron spectroscopy (XPS) used for determining the surface chemical structure and valence band offsets show that conduction band can be controlled by changing the sputtering atmosphere.

  18. Optical properties of SrTiO3 films

    International Nuclear Information System (INIS)

    Agasiyev, A.A.; Magerramov, E.M.; Mammadov, M.Z.; Sarmasov, S.M.

    2010-01-01

    The spectrums of optical absorption of amorphous and single crystalline films SrTiO 3 at temperatures : 105 K, 300 K, 400 K are investigated. The temperature dependences of slope absorption edge, forbidden gap and characteristic constant of Urbah rule are obtained. The forbidden gap of single crystalline film SrTiO 3 and average shift shift of absorption edge degree are defined. It is established that edge of optical absorption of SrTiO 3 film is obeyed to Urbah rule and the absorption in the investigated region is caused by the transition of electron interacting with phonon

  19. Nanowire growth from the viewpoint of the thin film polylayer growth theory

    Science.gov (United States)

    Kashchiev, Dimo

    2018-03-01

    The theory of polylayer growth of thin solid films is employed for description of the growth kinetics of single-crystal nanowires. Expressions are derived for the dependences of the height h and radius r of a given nanowire on time t, as well as for the h(r) dependence. These dependences are applicable immediately after the nanowire nucleation on the substrate and thus include the period during which the nucleated nanowire changes its shape from that of cap to that of column. The analysis shows that the nanowire cap-to-column shape transition is continuous and makes it possible to kinetically define the nanowire shape-transition radius by means of the nanowire radial and axial growth rates. The obtained h(t), r(t) and h(r) dependences are found to provide a good description of available experimental data for growth of self-nucleated GaN nanowires by the vapor-solid mechanism.

  20. The sharp edge: a frequent radiographic sign in neonatal pneumothorax

    International Nuclear Information System (INIS)

    Oestreich, A.E.

    1987-01-01

    The sharp edge sign, an unusually sharply defined silhouette of the heart and/or hemidiaphragm on frontal radiographs of the supine neonate, has been valuable in the initial recognition of pneumothorax. In a prospective study of 50 neonatal pneumothoraces, a sharp edge sign was present on the initial pneumothorax film 49 times. In seven of these, only the hemidiaphragm showed a sharp edge, while the heart margin was superimposed on the vertebral column. Greater awareness of the sharp edge sign would promote earlier recognition of neonatal pneumothorax. 6 refs.; 3 figs

  1. Josephson edge junctions on YBa2Cu3O7 thin films prepared with Br-ethanol etching

    International Nuclear Information System (INIS)

    Faley, M.I.; Poppe, U.; Daehne, U.; Goncharov, Yu.G.; Klein, N.; Urban, K.; Soltner, H.

    1993-01-01

    To produce damage-free edges is one of the main problems in the preparation of the Josephson edge-type junctions and interconnects in multilayer structures including high temperature superconductors. The commonly used ion beam etching has the disadvantages of the risk of contamination by redeposited material and structural damage to the surface of the edge. Vasquez et al and Gurvitch et al introduced a nonaqueous Br-ethanol etching for the preparation of clean surfaces of YBa 2 Cu 3 O 7 single crystals and thin films. We have developed a procedure of deep-UV-photolithography combined with nonaqueous Br-ethanol etching for the preparation of the Josephson edge-type junctions. Here we present the improvement of this method and report further results on the study of the electron transport properties of Josephson junctions with the edges of YBa 2 Cu 3 O 7 thin films produced by this technique. (orig.)

  2. Edge states and integer quantum Hall effect in topological insulator thin films.

    Science.gov (United States)

    Zhang, Song-Bo; Lu, Hai-Zhou; Shen, Shun-Qing

    2015-08-25

    The integer quantum Hall effect is a topological state of quantum matter in two dimensions, and has recently been observed in three-dimensional topological insulator thin films. Here we study the Landau levels and edge states of surface Dirac fermions in topological insulators under strong magnetic field. We examine the formation of the quantum plateaux of the Hall conductance and find two different patterns, in one pattern the filling number covers all integers while only odd integers in the other. We focus on the quantum plateau closest to zero energy and demonstrate the breakdown of the quantum spin Hall effect resulting from structure inversion asymmetry. The phase diagrams of the quantum Hall states are presented as functions of magnetic field, gate voltage and chemical potential. This work establishes an intuitive picture of the edge states to understand the integer quantum Hall effect for Dirac electrons in topological insulator thin films.

  3. Influence of Te and Se doping on ZnO films growth by SILAR method

    Science.gov (United States)

    Güney, Harun; Duman, Ćaǧlar

    2016-04-01

    The AIP Successive ionic layer adsorption and reaction (SILAR) is an economic and simple method to growth thin films. In this study, SILAR method is used to growth Selenium (Se) and Tellurium (Te) doped zinc oxide (ZnO) thin films with different doping rates. For characterization of the films X-ray diffraction (XRD), absorbance and scanning electron microscopy (SEM) are used. XRD results are showed well-defined strongly (002) oriented crystal structure for all samples. Also, absorbance measurements show, Te and Se concentration are proportional and inversely proportional with band gap energy, respectively. SEM measurements show that the surface morphology and thickness of the material varied with Se and/or Te and varying concentrations.

  4. Influence of Te and Se doping on ZnO films growth by SILAR method

    International Nuclear Information System (INIS)

    Güney, Harun; Duman, Çağlar

    2016-01-01

    The AIP Successive ionic layer adsorption and reaction (SILAR) is an economic and simple method to growth thin films. In this study, SILAR method is used to growth Selenium (Se) and Tellurium (Te) doped zinc oxide (ZnO) thin films with different doping rates. For characterization of the films X-ray diffraction (XRD), absorbance and scanning electron microscopy (SEM) are used. XRD results are showed well-defined strongly (002) oriented crystal structure for all samples. Also, absorbance measurements show, Te and Se concentration are proportional and inversely proportional with band gap energy, respectively. SEM measurements show that the surface morphology and thickness of the material varied with Se and/or Te and varying concentrations.

  5. Influence of Te and Se doping on ZnO films growth by SILAR method

    Energy Technology Data Exchange (ETDEWEB)

    Güney, Harun, E-mail: harunguney25@hotmail.com [Department of Electric and Energy, Vocation High School, Ağrı İbrahim Çeçen University (Turkey); Duman, Çağlar, E-mail: caglarduman@erzurum.edu.tr [Department of Electrical and Electronic Engineering, Faculty of Engineering, Erzurum Technical University (Turkey)

    2016-04-18

    The AIP Successive ionic layer adsorption and reaction (SILAR) is an economic and simple method to growth thin films. In this study, SILAR method is used to growth Selenium (Se) and Tellurium (Te) doped zinc oxide (ZnO) thin films with different doping rates. For characterization of the films X-ray diffraction (XRD), absorbance and scanning electron microscopy (SEM) are used. XRD results are showed well-defined strongly (002) oriented crystal structure for all samples. Also, absorbance measurements show, Te and Se concentration are proportional and inversely proportional with band gap energy, respectively. SEM measurements show that the surface morphology and thickness of the material varied with Se and/or Te and varying concentrations.

  6. Linear perturbation growth at the trailing edge of a rarefaction wave

    International Nuclear Information System (INIS)

    Wouchuk, J.G.; Carretero, R.

    2003-01-01

    An analytic model for the perturbation growth inside a rarefaction wave is presented. The objective of the work is to calculate the growth of the perturbations at the trailing edge of a simple expanding wave in planar geometry. Previous numerical and analytical works have shown that the ripples at the rarefaction tail exhibit linear growth asymptotically in time [Yang et al., Phys. Fluids 6, 1856 (1994), A. Velikovich and L. Phillips, ibid. 8, 1107 (1996)]. However, closed expressions for the asymptotic value of the perturbed velocity of the trailing edge have not been reported before, except for very weak rarefactions. Explicit analytic solutions for the perturbations growing at the rarefaction trailing edge as a function of time and also for the asymptotic perturbed velocity are given, for fluids with γ<3. The limits of weak and strong rarefactions are considered and the corresponding scaling laws are given. A semi-qualitative discussion of the late time linear growth at the trailing edge ripple is presented and it is seen that the lateral mass flow induced by the sound wave fluctuations is solely responsible for that behavior. Only the rarefactions generated after the interaction of a shock wave with a contact discontinuity are considered

  7. Growth performance and nutrient digestibility of broiler chickens fed ...

    African Journals Online (AJOL)

    Two hundred and seventy (270), day old chicks were used in a completely randomized design experimental layout to test the growth performance and nutrient digestibility of broiler chickens fed single phase diets containing natuzyme™ treated groundnut shell at 0, 5, 10, 15, 20 and 25 % inclusion levels. The treatments ...

  8. A Comparison of Growth and Survival of Aquacultured Juvenile Florida Pompano fed Fishmeal and Plant-Based Diets

    Science.gov (United States)

    Budden, D.

    2016-02-01

    We investigated the growth and survival of aquacultured juvenile Florida Pompano (Trachinotus carolinus) fed two different diets. Pompano (initial weight 7.7 g /fish) were randomly assigned to one of two dietary treatments: Zeigler pellets (fishmeal; 35% protein, 5% lipid) and a plant-based Repashy Soilent Green algae gel (plant-based; 35% protein, 6% lipid). Fish were fed rations of 5% body weight twice daily for eight weeks. Despite nearly equivalent proximate compositions for the two feeds, survival rates were significantly affected by diet. All fish fed the Zeigler diet survived; however, mortality was observed in 92% of the fish fed the Repashy diet. At the end of the trial, mean weight gain of surviving pompano was highest in fish fed Zeigler pellets. Mean specific growth rate (SGR) for fish fed the Zeigler diet (0.24% per day) was higher than for fish fed Repashy (-2.44%).While plant-based feeds have been successfully used with the species, these results suggest that the plant-based Repashy diet is not suitable for survival or growth of aquacultured Florida pompano.

  9. Thin-film growth and the shadow instability

    International Nuclear Information System (INIS)

    Karunasiri, R.P.U.; Bruinsma, R.; Rudnick, J.

    1989-01-01

    We propose a growth model for deposition of thin amorphous films by the sputtering technique. For small values of the diffusion constant, the film develops a self-similar mountain landscape. As the diffusion constant is increased a regime is reached where growth of compact flat films is possible up to a critical height. Further deposition leads to surface roughening

  10. Growth, Feed Utilization and Blood Metabolic Responses to Different Amylose-amylopectin Ratio Fed Diets in Tilapia (

    Directory of Open Access Journals (Sweden)

    Meng-Yao Chen

    2013-08-01

    Full Text Available A feeding trial was conducted in tilapia to determine the growth performance, nutrient digestibility, digestive enzymes, and postprandial blood metabolites in response to different dietary amylose-amylopectin ratios. Five isonitrogenous and isolipidic diets containing an equal starch level with different amylose-amylopectin ratios of 0.11 (diet 1, 0.24 (diet 2, 0.47 (diet 3, 0.76 (diet 4 and 0.98 (diet 5 were formulated using high-amylose corn starch (as the amylose source and waxy rice (as the amylopectin source. Each diet was hand-fed to six tanks of 15 fish each, three times a day over a 6-wk period. After the growth trial, a postprandial blood metabolic test was carried out. Fish fed diet 2 exhibited the highest percent weight gain and feed efficiency and protein efficiency ratio, whereas fish fed with diet 5 showed the lowest growth and feed utilization among treatments. The digestibility for starch in fish fed diet 1 and 2 was higher than those in fish fed with other diets (p<0.05. The highest activities for protease, lipase and amylase were found in fish fed the diet 2, diet 1, and diet 1 respectively among dietary treatments, while the lowest values for these indexes were observed in fish fed the diet 3, diet 5 and diet 4, respectively. The liver glycogen concentrations in fish fed diets 4 and 5 were found higher than in fish fed other diets (p<0.05. The feeding rate, hepatosomatic index, condition factor, and plasma parmeters (glucose, triglyceride, total cholesterol, high-density lipoprotein cholesterol, and low-density lipoprotein cholesterol did not differ across treatments. In terms of postprandial blood responses, peak blood glucose and triglycerides were lower after 3 or 6 h in the fish fed with diets 3–5 than in the fish fed diet 1, but delayed peak blood total amino acid time was observed in fish fed with the diets 1 or 2. The lowest peak values for each of the three blood metabolites were observed in fish fed diet 5. The

  11. Highly Efficient Thin-Film Transistor via Cross-Linking of 1T Edge Functional 2H Molybdenum Disulfides.

    Science.gov (United States)

    Lee, Hanleem; Bak, Sora; An, Sung-Jin; Kim, Jung Ho; Yun, Eunbhin; Kim, Meeree; Seo, Sohyeon; Jeong, Mun Seok; Lee, Hyoyoung

    2017-12-26

    Thin-film transistors (TFTs) have received great attention for their use in lightweight, large area, and wearable devices. However, low crystalline materials and inhomogeneous film formation limit the realization of high-quality electrical properties for channels in commercial TFTs, especially for flexible electronics. Here, we report a field-effect TFT fabricated via cross-linking of edge-1T basal-2H MoS 2 sheets that are prepared by edge functional exfoliation of bulk MoS 2 with soft organic exfoliation reagents. For edge functional exfoliation, the electrophilic 4-carboxy-benzenediazonium used as the soft organic reagent attacks the nucleophilic thiolates exposed at the edge of the bulk MoS 2 with the help of an amine catalyst, resulting in 1T edge-functional HOOC-benzene-2H basal MoS 2 nanosheets (e-MoS 2 ). The cross-linking via hydrogen bonding of the negatively charged HOOC of the e-MoS 2 sheets with the help of a cationic polymer, polydiallyldimethylammonium chloride, results in a good film formation for a channel of the solution processing TFT. The TFT exhibits an extremely high mobility of 170 cm 2 /(V s) at 1 V (on/off ratio of 10 6 ) on SiO 2 /Si substrate and also a high mobility of 36.34 cm 2 /(V s) (on/off ratio of 10 3 ) on PDMS/PET substrate.

  12. A FED Prototype Using Patterned DLC Thin Films as the Cathode

    Science.gov (United States)

    Li, W.; Feng, T.; Mao, D. S.; Wang, X.; Liu, X. H.; Zou, S. C.; Zhu, Y. K.; Li, Q.; Xu, J. F.; Jin, S.; Zheng, J. S.

    In our study, diamond-like-carbon (DLC) thin films were prepared by filtered arc deposition (FAD), which provided a way to deposit DLC thin films on large areas at room temperature. Glass slides coated 100nm chromium or titanium thin films were used as cathode substrates. Millions of rectangular holes with sizes of 5 × 5μm were made on the DLC films using a routine patterning process. Here a special reactive ion beam etching method was applied to etch the DLC films. The anodes of the devices were made by electrophoretic deposition. ZnO:Zn phosphor (P15) was employed, which has a broad band bluish green (centered at 490nm). Before electrophoretic deposition, the anode substrates (ITO glass slides) had been patterned into 50 anode electrodes. In order to improve the adherence of phosphor layers, the as-deposited screens were treated in Na2SiO3 solution for 24h to add additional binder. A kind of matrix-addressed diode FED prototype was designed and packaged. 50-100μm-thick glass slides were used as spacers and getters were applied to maintain the vacuum after the exhaustion. The applied DC voltage was ranged in 0-3000V and much higher current density was measured in the cathode-patterned prototypes than the unpatterned ones during the test. As a result, characters could be well displayed.

  13. Orchestrated structure evolution: modeling growth-regulated nanomanufacturing

    Energy Technology Data Exchange (ETDEWEB)

    Abbasi, Shaghayegh; Boehringer, Karl F [Department of Electrical Engineering, University of Washington, Seattle, WA 98195-2500 (United States); Kitayaporn, Sathana; Schwartz, Daniel T, E-mail: karlb@washington.edu [Department of Chemical Engineering, University of Washington, Seattle, WA 98195-2500 (United States)

    2011-04-22

    Orchestrated structure evolution (OSE) is a scalable manufacturing method that combines the advantages of top-down (tool-directed) and bottom-up (self-propagating) approaches. The method consists of a seed patterning step that defines where material nucleates, followed by a growth step that merges seeded islands into the final patterned thin film. We develop a model to predict the completed pattern based on a computationally efficient approximate Green's function solution of the diffusion equation plus a Voronoi diagram based approach that defines the final grain boundary structure. Experimental results rely on electron beam lithography to pattern the seeds, followed by the mass transfer limited growth of copper via electrodeposition. The seed growth model is compared with experimental results to quantify nearest neighbor seed-to-seed interactions as well as how seeds interact with the pattern boundary to impact the local growth rate. Seed-to-seed and seed-to-pattern interactions are shown to result in overgrowth of seeds on edges and corners of the shape, where seeds have fewer neighbors. We explore how local changes to the seed location can be used to improve the patterning quality without increasing the manufacturing cost. OSE is shown to enable a unique set of trade-offs between the cost, time, and quality of thin film patterning.

  14. Lutein-fortified infant formula fed to healthy term infants: evaluation of growth effects and safety.

    Science.gov (United States)

    Capeding, Rosario; Gepanayao, Connie P; Calimon, Nerrisa; Lebumfacil, Jowena; Davis, Anne M; Stouffer, Nicole; Harris, Bruce J

    2010-05-21

    Breast milk contains lutein derived from the mother's diet. This carotenoid is currently not added to infant formula, which has a small and variable lutein content from innate ingredients. This study was conducted to compare the growth of infants fed lutein-fortified infant formula with that of infants fed infant formula without lutein fortification. This 16-week study was prospective, randomized, controlled, and double-blind with parallel groups of healthy term infants fed either control formula (Wyeth S-26 Gold, designated as Gold) or experimental formula (Wyeth S-26 Gold fortified with lutein at 200 mcg/l, designated as Gold+Lutein). Two hundred thirty-two (232) infantslutein-fortified S-26 Gold demonstrated growth equivalent to that of infants fed unfortified lutein formula.

  15. Growth and Survival of Catfish ( Clarias anguillaris ) Juveniles Fed ...

    African Journals Online (AJOL)

    Juveniles of catfish, Clarias anguillaris (mean weight, 119.8g) were fed unconventional diets for ten weeks in outdoor hapas (net cages, 1m3 dimension) and the growth responses and feed utilization by the juveniles were compared. The experimental diets were (i) live maggots, (ii) live tilapia fry, (iii) commercial catfish feed ...

  16. Self-Limited Growth in Pentacene Thin Films.

    Science.gov (United States)

    Pachmajer, Stefan; Jones, Andrew O F; Truger, Magdalena; Röthel, Christian; Salzmann, Ingo; Werzer, Oliver; Resel, Roland

    2017-04-05

    Pentacene is one of the most studied organic semiconducting materials. While many aspects of the film formation have already been identified in very thin films, this study provides new insight into the transition from the metastable thin-film phase to bulk phase polymorphs. This study focuses on the growth behavior of pentacene within thin films as a function of film thickness ranging from 20 to 300 nm. By employing various X-ray diffraction methods, combined with supporting atomic force microscopy investigations, one crystalline orientation for the thin-film phase is observed, while three differently tilted bulk phase orientations are found. First, bulk phase crystallites grow with their 00L planes parallel to the substrate surface; second, however, crystallites tilted by 0.75° with respect to the substrate are found, which clearly dominate the former in ratio; third, a different bulk phase polymorph with crystallites tilted by 21° is found. The transition from the thin-film phase to the bulk phase is rationalized by the nucleation of the latter at crystal facets of the thin-film-phase crystallites. This leads to a self-limiting growth of the thin-film phase and explains the thickness-dependent phase behavior observed in pentacene thin films, showing that a large amount of material is present in the bulk phase much earlier during the film growth than previously thought.

  17. Formation of complex wedding-cake morphologies during homoepitaxial film growth of Ag on Ag(111): atomistic, step-dynamics, and continuum modeling

    International Nuclear Information System (INIS)

    Li Maozhi; Han, Yong; Thiel, P A; Evans, J W

    2009-01-01

    An atomistic lattice-gas model is developed which successfully describes all key features of the complex mounded morphologies which develop during deposition of Ag films on Ag(111) surfaces. We focus on this homoepitaxial thin film growth process below 200 K. The unstable multilayer growth mode derives from the presence of a large Ehrlich-Schwoebel step-edge barrier, for which we characterize both the step-orientation dependence and the magnitude. Step-dynamics modeling is applied to further characterize and elucidate the evolution of the vertical profiles of these wedding-cake-like mounds. Suitable coarse-graining of these step-dynamics equations leads to instructive continuum formulations for mound evolution.

  18. Physical phenomena stipulating nucleus formation, growth and structure films

    Energy Technology Data Exchange (ETDEWEB)

    Aleksandrov, L N [AN SSSR, Novosibirsk. Inst. Fiziki Poluprovodnikov

    1975-03-01

    This review is concerned with the physical phenomena responsible for the nucleation, growth and structure of films. Emphasis is placed on the study of films of solid-metal systems, semiconductors (In, As, Cd, Se, CdS), and dielectrics. The following problems are discussed in the paper: general regularities of the thermodynamics and kinetics of film formation, methods of obtaining a solid film, the process of film formation, the rate of growth of individual grains. The critical film thickness and its measurement are also considered. The results of investigating the process of formation of mono- and polycrystalline films are discussed. It is concluded, on the basis of studies into the relaxation processes accompanying the growth of films, that an insight into these processes will permits improving film properties.

  19. Growth and structure of water on SiO2 films on Si investigated byKelvin probe microscopy and in situ X-ray Spectroscopies

    Energy Technology Data Exchange (ETDEWEB)

    Verdaguer, A.; Weis, C.; Oncins, G.; Ketteler, G.; Bluhm, H.; Salmeron, M.

    2007-06-14

    The growth of water on thin SiO{sub 2} films on Si wafers at vapor pressures between 1.5 and 4 torr and temperatures between -10 and 21 C has been studied in situ using Kelvin Probe Microscopy and X-ray photoemission and absorption spectroscopies. From 0 to 75% relative humidity (RH) water adsorbs forming a uniform film 4-5 layers thick. The surface potential increases in that RH range by about 400 mV and remains constant upon further increase of the RH. Above 75% RH the water film grows rapidly, reaching 6-7 monolayers at around 90% RH and forming a macroscopic drop near 100%. The O K-edge near-edge X-ray absorption spectrum around 75% RH is similar to that of liquid water (imperfect H-bonding coordination) at temperatures above 0 C and ice-like below 0 C.

  20. FED pumped limiter configuration issues

    International Nuclear Information System (INIS)

    Haines, J.R.; Fuller, G.M.

    1983-01-01

    Impurity control in the Fusion Engineering Device (FED) is provided by a toroidal belt pumped limiter. Limiter design issues addressed in this paper are (1) poloidal location of the limiter belt, (2) shape of the limiter surface facing the plasma, and (3) whether the belt is pumped from one or both sides. The criteria used for evaluation of limiter configuration features were sensitivity to plasma-edge conditions and ease of maintenance and fabrication. The evaluation resulted in the selection of a baseline FED limiter that is located at the bottom of the device and has a flat surface with a single leading edge

  1. FED pumped limiter configuration issues

    International Nuclear Information System (INIS)

    Haines, J.R.; Fuller, G.M.

    1983-01-01

    Impurity control in the Fusion Engineering Device (FED) is provided by a toroidal belt pumped limiter. Limiter design issues addressed in this paper are (1) poloidal location of the limiter belt, (2) shape of the limiter surface facing the plasma, and (3) whether the belt is pumped from one or both sides. The criteria used for evaluation of limiter configuration features were sensitivity to plasma edge conditions and ease of maintenance and fabrication. The evaluation resulted in the selection of a baseline FED limiter that is located at the bottom of the device and has a flat surface with a single leading edge

  2. Growth of infants born to HIV-infected women when fed a ...

    African Journals Online (AJOL)

    Growth of infants born to HIV-infected women when fed a ... breast-feeding.1 This must be balanced against the many benefits of ... milk formulas for their newborn infants. Outcome ... Inclusion criteria were normally grown (birth weight 2500–.

  3. Do infants fed directly from the breast have improved appetite regulation and slower growth during early childhood compared with infants fed from a bottle?

    Directory of Open Access Journals (Sweden)

    Fisher Jennifer O

    2011-08-01

    Full Text Available Abstract Background Behavioral mechanisms that contribute to the association between breastfeeding and reduced obesity risk are poorly understood. The purpose of this study was to evaluate the hypothesis that feeding human milk from the breast (direct breastfeeding has a more optimal association with subsequent child appetite regulation behaviors and growth, when compared to bottle-feeding. Methods Children (n = 109 aged 3- to 6- years were retrospectively classified as directly breastfed (fed exclusively at the breast, bottle-fed human milk, or bottle-fed formula in the first three months of life. Young children's appetite regulation was examined by measuring three constructs (satiety response, food responsiveness, enjoyment of food associated with obesity risk, using the Child Eating Behavior Questionnaire. Multinomial logistic regression analyses were used to test whether children bottle-fed either human milk or formula had reduced odds of high satiety and increased odds of high food responsiveness and high enjoyment of food compared to children fed directly from the breast. Current child weight status and growth trends from 6-36 months were also examined for their relation to direct breastfeeding and appetite regulation behaviors in early childhood. Results Children fed human milk in a bottle were 67% less likely to have high satiety responsiveness compared to directly breastfed children, after controlling for child age, child weight status, maternal race/ethnicity, and maternal education. There was no association of bottle-feeding (either human milk or formula with young children's food responsiveness and enjoyment of food. There was neither an association of direct breastfeeding with current child weight status, nor was there a clear difference between directly breastfed and bottle-fed children in growth trajectories from 6- to 36-months. More rapid infant changes in weight-for-age score were associated with lower satiety responsiveness

  4. Measurements of 3D velocity and scalar field for a film-cooled airfoil trailing edge

    Energy Technology Data Exchange (ETDEWEB)

    Benson, Michael J.; Elkins, Christopher J.; Eaton, John K. [Stanford University, Department of Mechanical Engineering, Stanford, CA (United States)

    2011-08-15

    The 3D velocity and concentration fields have been measured for flow in a pressure side cutback trailing edge film cooling geometry consisting of rectangular film cooling slots separated by tapered lands. The velocity field was measured using conventional magnetic resonance velocimetry, and the concentration distribution was measured with a refined magnetic resonance concentration technique that yields experimental uncertainties for the concentration between 5 and 6%. All experiments were performed in water. A separation bubble behind the slot lip entrains coolant and promotes rapid turbulent mixing at the upper edge of the coolant jet. Vortices from inside the slot feed channel and on the upper sides of the lands rapidly distort the initially rectangular shape of the coolant stream and sweep mainstream flow toward the airfoil surface. The vortices also prevent any coolant from reaching the upper surfaces of the land. At the trailing edge, a second separation region exists in the blunt trailing edge wake. The flow forms suction side streaks behind the land tips, as well as streaks behind the slot centers on the pressure side. The peak coolant concentrations in the streaks remain above 25% through the end of the measurement domain, over 30 slot heights downstream. (orig.)

  5. Fatty acid intake alters growth and immunity in milk-fed calves.

    Science.gov (United States)

    Hill, T M; Vandehaar, M J; Sordillo, L M; Catherman, D R; Bateman, H G; Schlotterbeck, R L

    2011-08-01

    The aim of the present study was to determine the effect of supplementing milk replacer (MR) with NeoTec4 (Provimi North America, Brookville, OH), a commercially available blend of butyric acid, coconut oil, and flax oil, on calf growth, efficiency, and indices of immune function. In trial 1a, 48 male Holstein calves were fed either a control MR that contained only animal fat or the same MR with NeoTec4 (treatment) along with free-choice starter. The MR (28.7% crude protein, 15.6% fat) was fed at an average of 1 kg of dry matter (DM)/d. In trial 1b, weaned calves from trial 1a were all fed dry starter for 28 d without NeoTec4 (phase 1), and then half the calves were fed NeoTec4 for 28 d (phase 2). In trial 2, 40 male Holstein calves were fed a control MR with lard, coconut oil, and soy lecithin or the same MR supplemented with NeoTec4 (treatment). The MR (22.8% crude protein, 18.9% fat) was fed at an average of 1 kg of DM/d; no starter was fed. In trial 1a, NeoTec4 improved average daily gain, feed intake, and feed efficiency, reduced the number of days that calves experienced scours, and reduced the medical treatments for clostridium sickness. In trials 1a and 2, NeoTec4 altered the inflammatory response to vaccination with Pasteurella at 5 wk of age and to challenge with Salmonella toxin at less than 2 wk of age (fed NeoTec4 for 6 d), as observed by reduced hyperthermia and hypophagia, and altered the tumor necrosis factor-α response. In addition, NeoTec4 enhanced the response in IL-4 and globular protein estimates postchallenge and enhanced titers for bovine viral diarrhea and respiratory parainfluenza-3. Postchallenge serum concentrations of albumin were lower and urea nitrogen concentrations were greater in control calves than in calves fed NeoTec4. In trial 1b, performance did not differ during the first 28 d when no calves received NeoTec4, but calves receiving NeoTec4 in the second 28 d had greater average daily gain and feed efficiency. We conclude that

  6. Finite element method calculations of GMI in thin films and sandwiched structures: Size and edge effects

    International Nuclear Information System (INIS)

    Garcia-Arribas, A.; Barandiaran, J.M.; Cos, D. de

    2008-01-01

    The impedance values of magnetic thin films and magnetic/conductor/magnetic sandwiched structures with different widths are computed using the finite element method (FEM). The giant magneto-impedance (GMI) is calculated from the difference of the impedance values obtained with high and low permeability of the magnetic material. The results depend considerably on the width of the sample, demonstrating that edge effects are decisive for the GMI performance. It is shown that, besides the usual skin effect that is responsible for GMI, an 'unexpected' increase of the current density takes place at the lateral edge of the sample. In magnetic thin films this effect is dominant when the permeability is low. In the trilayers, it is combined with the lack of shielding of the central conductor at the edge. The resulting effects on GMI are shown to be large for both kinds of samples. The conclusions of this study are of great importance for the successful design of miniaturized GMI devices

  7. The growth of juvenile jaguar guapote (Cichlasoma managuense fed diets with different carbohydrate levels (ESP

    Directory of Open Access Journals (Sweden)

    Juan B Ulloa R.

    2016-03-01

    Full Text Available The experiment was conducted in a 16 45 L aquaria recirculation system. The objective was to evaluate the growth of jaguar guapote (Cichlasoma managuense when fed isocaloric diets with increasing carbohydrate levels from 11 to 36 percent. Relative metabolic growth rate and feed conversion were similar with diets containing 11.5%, 18.8% and 26.5% carbohydrate (P > 0.05 . The highest protein efficiency ratio (PER and apparent net protein utilization (NPUa values were found with the 18.8% carbohydrate diet. Growth performance, feed utilization parameters and the survival were the lowest with fish fed the highest carbohydrate level (35.6%. Fish body protein increased and body fat decreased with increasing dietary carbohydrate levels. The body ash showed a trend similar to the body protein. It is concluded that juvenile C. managuense can grow well when fed 40% protein diets containing up to 26.5% carbohydrate.

  8. Influence of defects on the absorption edge of InN thin films: The band gap value

    Science.gov (United States)

    Thakur, J. S.; Danylyuk, Y. V.; Haddad, D.; Naik, V. M.; Naik, R.; Auner, G. W.

    2007-07-01

    We investigate the optical-absorption spectra of InN thin films whose electron density varies from ˜1017tõ1021cm-3 . The low-density films are grown by molecular-beam-epitaxy deposition while highly degenerate films are grown by plasma-source molecular-beam epitaxy. The optical-absorption edge is found to increase from 0.61to1.90eV as the carrier density of the films is increased from low to high density. Since films are polycrystalline and contain various types of defects, we discuss the band gap values by studying the influence of electron degeneracy, electron-electron, electron-ionized impurities, and electron-LO-phonon interaction self-energies on the spectral absorption coefficients of these films. The quasiparticle self-energies of the valence and conduction bands are calculated using dielectric screening within the random-phase approximation. Using one-particle Green’s function analysis, we self-consistently determine the chemical potential for films by coupling equations for the chemical potential and the single-particle scattering rate calculated within the effective-mass approximation for the electron scatterings from ionized impurities and LO phonons. By subtracting the influence of self-energies and chemical potential from the optical-absorption edge energy, we estimate the intrinsic band gap values for the films. We also determine the variations in the calculated band gap values due to the variations in the electron effective mass and static dielectric constant. For the lowest-density film, the estimated band gap energy is ˜0.59eV , while for the highest-density film, it varies from ˜0.60tõ0.68eV depending on the values of electron effective mass and dielectric constant.

  9. Growth and magnetic properties dependence of the Co–Cu/Cu films electrodeposited under high magnetic fields

    Energy Technology Data Exchange (ETDEWEB)

    Franczak, Agnieszka, E-mail: agnieszka.franczak@mtm.kuleuven.be [Laboratoire d’Ingénierie et Sciences des Matériaux (LISM EA 4695), Université de Reims Champagne-Ardenne, UFR Sciences et Naturelles, Bat. 6, Moulin de la Housse, BP 1039, 51687 Reims Cedex 2 (France); Department of Materials Science (MTM), KU Leuven, Kasteelpark Arenberg 44, 3001 Haverlee (Leuven) (Belgium); Levesque, Alexandra [Laboratoire d’Ingénierie et Sciences des Matériaux (LISM EA 4695), Université de Reims Champagne-Ardenne, UFR Sciences et Naturelles, Bat. 6, Moulin de la Housse, BP 1039, 51687 Reims Cedex 2 (France); Zabinski, Piotr [Laboratory of Physical Chemistry and Electrochemistry, Faculty of Non-Ferrous Metals, AGH University of Science and Technology, al. A. Mickiewicza 30, 30059 Krakow (Poland); Li, Donggang [Key Laboratory of Electromagnetic Processing of Materials (Ministry of Education), Northeastern University, 314 Box, 110004 Shenyang (China); Czapkiewicz, Maciej [Department of Electronics, AGH University of Science and Technology, al. A. Mickiewicza 30, 30059 Krakow (Poland); Kowalik, Remigiusz [Laboratory of Physical Chemistry and Electrochemistry, Faculty of Non-Ferrous Metals, AGH University of Science and Technology, al. A. Mickiewicza 30, 30059 Krakow (Poland); Bohr, Frédéric [Laboratoire d’Ingénierie et Sciences des Matériaux (LISM EA 4695), Université de Reims Champagne-Ardenne, UFR Sciences et Naturelles, Bat. 6, Moulin de la Housse, BP 1039, 51687 Reims Cedex 2 (France); and others

    2015-07-15

    The present work is focused on the investigations of magnetic properties dependence on microstructure of Co–Cu/Cu films electrodeposited under superimposed high magnetic field. The experimental results indicate a strong effect of an external magnetic field on the morphology of deposited films, more precisely on the Co:Cu ratio that determines the film growth. It is shown that the Co–Cu/Cu films electrodeposited without superimposed magnetic field consisted of two clearly visible features: compact film with incorporated granular particles. Under a superimposed external high magnetic field the privilege growth of the particles was induced. As a consequence, development of the well-defined branched structure of Co–Cu/Cu film was observed. In contrary, the phase compositional investigations do not reveal any changes in the phase formation during electrodeposition under magnetic field conditions. Thus, it is assumed that a strong growth of Co–Cu/Cu films in (111) direction under magnetic or non-magnetic electrodeposition conditions is related with the growth of Cu (111) plane and embedded into it some of the Co fcc atoms of same (111) orientation, as well as the Co hcp atoms that grows in the (002) direction. This non-equilibrium growth of Co–Cu/Cu films under magnetic deposition conditions affects strongly the magnetic properties of deposited films, revealing that films obtained under magnetic fields higher than 3 T were no more magnetic materials. - Highlights: • Co–Cu/Cu electrodeposits were obtained at elevated temperature under HMFs. • The effects of HMFs on microstructure and magnetic properties were investigated. • Interesting morphological changes due to HMFs has been observed. • Changes in Co:Cu ratio due to HMFs modified the magnetic properties of deposits.

  10. Growth and magnetic properties dependence of the Co–Cu/Cu films electrodeposited under high magnetic fields

    International Nuclear Information System (INIS)

    Franczak, Agnieszka; Levesque, Alexandra; Zabinski, Piotr; Li, Donggang; Czapkiewicz, Maciej; Kowalik, Remigiusz; Bohr, Frédéric

    2015-01-01

    The present work is focused on the investigations of magnetic properties dependence on microstructure of Co–Cu/Cu films electrodeposited under superimposed high magnetic field. The experimental results indicate a strong effect of an external magnetic field on the morphology of deposited films, more precisely on the Co:Cu ratio that determines the film growth. It is shown that the Co–Cu/Cu films electrodeposited without superimposed magnetic field consisted of two clearly visible features: compact film with incorporated granular particles. Under a superimposed external high magnetic field the privilege growth of the particles was induced. As a consequence, development of the well-defined branched structure of Co–Cu/Cu film was observed. In contrary, the phase compositional investigations do not reveal any changes in the phase formation during electrodeposition under magnetic field conditions. Thus, it is assumed that a strong growth of Co–Cu/Cu films in (111) direction under magnetic or non-magnetic electrodeposition conditions is related with the growth of Cu (111) plane and embedded into it some of the Co fcc atoms of same (111) orientation, as well as the Co hcp atoms that grows in the (002) direction. This non-equilibrium growth of Co–Cu/Cu films under magnetic deposition conditions affects strongly the magnetic properties of deposited films, revealing that films obtained under magnetic fields higher than 3 T were no more magnetic materials. - Highlights: • Co–Cu/Cu electrodeposits were obtained at elevated temperature under HMFs. • The effects of HMFs on microstructure and magnetic properties were investigated. • Interesting morphological changes due to HMFs has been observed. • Changes in Co:Cu ratio due to HMFs modified the magnetic properties of deposits

  11. Investigation into short-range order, electric conductivity and optical absorption edge of indium selenide thin amorphous films

    International Nuclear Information System (INIS)

    Bilyj, M.N.; Didyk, G.V.; Stetsiv, Ya.I.; Yurechko, R.Ya.

    1980-01-01

    Thin amorphous films of InSe have been obtained by the method of discrete vacuum evaporation of about 10 -2 Pa. The short-range order is investigated according to the radial distribution curves. The temperature and film thickness are shown to affect the character of conductivity. The width of the forbidden band determined by the fundamental absorption edge is found to depend on the time of film annealing

  12. Silk Film Topography Directs Collective Epithelial Cell Migration

    Science.gov (United States)

    Rosenblatt, Mark I.

    2012-01-01

    The following study provides new insight into how surface topography dictates directed collective epithelial cell sheet growth through the guidance of individual cell movement. Collective cell behavior of migrating human corneal limbal-epithelial cell sheets were studied on highly biocompatible flat and micro-patterned silk film surfaces. The silk film edge topography guided the migratory direction of individual cells making up the collective epithelial sheet, which resulted in a 75% increase in total culture elongation. This was due to a 3-fold decrease in cell sheet migration rate efficiency for movement perpendicular to the topography edge. Individual cell migration direction is preferred in the parallel approach to the edge topography where localization of cytoskeletal proteins to the topography’s edge region is reduced, which results in the directed growth of the collective epithelial sheet. Findings indicate customized biomaterial surfaces may be created to direct both the migration rate and direction of tissue epithelialization. PMID:23185573

  13. Formation of Stone-Wales edge: Multistep reconstruction and growth mechanisms of zigzag nanographene.

    Science.gov (United States)

    Dang, Jing-Shuang; Wang, Wei-Wei; Zheng, Jia-Jia; Nagase, Shigeru; Zhao, Xiang

    2017-10-05

    Although the existence of Stone-Wales (5-7) defect at graphene edge has been clarified experimentally, theoretical study on the formation mechanism is still imperfect. In particular, the regioselectivity of multistep reactions at edge (self-reconstruction and growth with foreign carbon feedstock) is essential to understand the kinetic behavior of reactive boundaries but investigations are still lacking. Herein, by using finite-sized models, multistep reconstructions and carbon dimer additions of a bared zigzag edge are introduced using density functional theory calculations. The zigzag to 5-7 transformation is proved as a site-selective process to generate alternating 5-7 pairs sequentially and the first step with largest barrier is suggested as the rate-determining step. Conversely, successive C 2 insertions on the active edge are calculated to elucidate the formation of 5-7 edge during graphene growth. A metastable intermediate with a triple sequentially fused pentagon fragment is proved as the key structure for 5-7 edge formation. © 2017 Wiley Periodicals, Inc. © 2017 Wiley Periodicals, Inc.

  14. Thin film epitaxy and structure property correlations for non-polar ZnO films

    International Nuclear Information System (INIS)

    Pant, P.; Budai, J.D.; Aggarwal, R.; Narayan, Roger J.; Narayan, J.

    2009-01-01

    Heteroepitaxial growth and strain relaxation were investigated in non-polar a-plane (1 1 -2 0)ZnO films grown on r-plane (1 0 -1 2)sapphire substrates in the temperature range 200-700 deg. C by pulsed laser deposition. The lattice misfit in the plane of the film for this orientation varied from -1.26% in [0 0 0 1] to -18.52% in the [-1 1 0 0] direction. The alignment of (1 1 -2 0)ZnO planes parallel to (1 0 -1 2)sapphire planes was confirmed by X-ray diffraction θ-2θ scans over the entire temperature range. X-ray φ-scans revealed the epitaxial relationship:[0 0 0 1]ZnO-parallel [-1 1 0 1]sap; [-1 1 0 0]ZnO-parallel [-1 -1 2 0]sap. Depending on the growth temperature, variations in the structural, optical and electrical properties were observed in the grown films. Room temperature photoluminescence for films grown at 700 deg. C shows a strong band-edge emission. The ratio of the band-edge emission to green band emission is 135:1, indicating reduced defects and excellent optical quality of the films. The resistivity data for the films grown at 700 deg. C shows semiconducting behavior with room temperature resistivity of 2.2 x 10 -3 Ω-cm.

  15. Growth of juvenile green iguanas (Iguana iguana) fed four diets.

    Science.gov (United States)

    Donoghue, S

    1994-12-01

    Wild green iguanas consume a primarily folivorous diet. As pets in captivity, they suffer high mortality and malnutrition. Nutrient requirements are not established. The purpose of this study was to compare growth in juvenile iguanas fed three commercial diets and a romaine-based diet. Twelve nominally 4-wk-old iguanas were fed in a latin square design each of four diets for 8 wk, consisting of a 2-wk accommodation period and a 6-wk collection period. Diets were analyzed at the beginning and end of the study. Food consumption was measured daily; body weights and lengths were measured weekly. For Diets A, B, C and D mean body weight gains were--3, 6, 31 and 60% in 6 wk, respectively. Gain in body weight and snout-vent length increased linearly with dietary protein and fiber and with dry matter intake. The data suggest that growth in pet green iguanas may achieve rates for farmed and wild green iguanas when diets are palatable and contain adequate protein and fiber.

  16. Multiple Scattering Approach to Polarization Dependence of F K-Edge XANES Spectra for Highly Oriented Polytetrafluoroethylene (PTFE) Thin Film

    International Nuclear Information System (INIS)

    Nagamatsu, S.; Ono, M.; Kera, S.; Okudaira, K. K.; Fujikawa, T.; Ueno, N.

    2007-01-01

    The polarization dependence of F K-edge X-ray absorption near edge structure (XANES) spectra of highly-oriented thin-film of polytetrafluoroethylene (PTFE) has been analyzed by using multiple scattering theory. The spectra show clear polarization dependence due to the highly-oriented structure. The multiple scattering calculations reflects a local structure around an absorbing atom. The calculated results obtained by considering intermolecular-interactions are in good agreement with the observed polarization-dependence. We have also analyzed structural models of the radiation damaged PTFE films

  17. Lutein-fortified infant formula fed to healthy term infants: evaluation of growth effects and safety

    Directory of Open Access Journals (Sweden)

    Davis Anne M

    2010-05-01

    Full Text Available Abstract Background/Objectives Breast milk contains lutein derived from the mother's diet. This carotenoid is currently not added to infant formula, which has a small and variable lutein content from innate ingredients. This study was conducted to compare the growth of infants fed lutein-fortified infant formula with that of infants fed infant formula without lutein fortification. Subjects/Methods This 16-week study was prospective, randomized, controlled, and double-blind with parallel groups of healthy term infants fed either control formula (Wyeth S-26 Gold, designated as Gold or experimental formula (Wyeth S-26 Gold fortified with lutein at 200 mcg/l, designated as Gold + Lutein. Two hundred thirty-two (232 infants ≤ 14 days postnatal age were randomized and 220 (94.8% completed the study. Weight (g, head circumference (cm, and length (cm were measured at Weeks 4, 8, 12, and 16. The primary endpoint was weight gain (g/day from baseline to Week 16. Safety was assessed through monitoring of study events (SEs throughout the study and evaluation of selected blood chemistry tests performed at Week 16. Results Infants in both treatment groups demonstrated appropriate growth. No differences between treatment groups were found in any of the measures of growth at any of the measurement time points. Both study formulas were well tolerated. The mean values of all measured blood chemistry parameters fell within the modified normal ranges for infants, and the values for both groups for any measured parameter were similar. Conclusions Infants fed lutein-fortified S-26 Gold demonstrated growth equivalent to that of infants fed unfortified lutein formula.

  18. Growth of metastable fcc Mn thin film on GaAs(001) and its electronic structure studied by photoemission with synchrotron radiation

    International Nuclear Information System (INIS)

    Chen Yan; Dong Guosheng; Zhang Ming

    1995-01-01

    The epitaxial growth of metastable fcc Mn thin films on GaAs(001) surface has been achieved at a substrate temperature of 400 K. The development of the fcc Mn thin films as a function of coverage is studied by photoemission with synchrotron radiation. The electron density of states below the Fermi edge of the fcc Mn phase is measured. A significant difference of the electronic structures is observed between the metastable fcc Mn phase and the thermodynamically stable α-Mn phase. Possible mechanisms are proposed to interpret the experimental result

  19. Growth Performance of Red Sokoto Bucks Fed Inclusion levels of ...

    African Journals Online (AJOL)

    This study was carried out to evaluate the growth performance of red Sokoto bucks fed two (2) inclusion levels of rawwater soaked and lime soaked Hibiscus sabdariffa seeds in rice offal based diets. A total of twenty one (21) red Sokoto bucks were randomly allotted into seven treatments with three (3) bucks per group while ...

  20. Growth of epitaxial thin films by pulsed laser ablation

    International Nuclear Information System (INIS)

    Lowndes, D.H.

    1992-01-01

    High-quality, high-temperature superconductor (HTSc) films can be grown by the pulsed laser ablation (PLA) process. This article provides a detailed introduction to the advantages and curent limitations of PLA for epitaxial film growth. Emphasis is placed on experimental methods and on exploitation of PLA to control epitaxial growth at either the unit cell or the atomic-layer level. Examples are taken from recent HTSc film growth. 33 figs, 127 refs

  1. Effects of free-stream turbulence intensity and blowing ratio on film cooling of turbine blade leading edge

    International Nuclear Information System (INIS)

    Kim, S. M.; Kim, Youn J.; Cho, H. H.

    2001-01-01

    We used a cylindrical model which simulates turbine blade leading edge to investigate the effects of free-stream turbulence intensity and blowing ratio on film cooling of turbine blade leading edge. Tests are carried out in a low-speed wind tunnel on a cylindrical model with three rows of injection holes. Mainstream Reynolds number based on the cylinder diameter was 7.1x10 4 . Two types of turbulence grid are used to increase a free-stream turbulence intensity. The effect of coolant blowing ratio was studied for various blowing ratios. For each blowing ratios, wall temperatures around the surface of the test model are measured by thermocouples installed inside the model. Results show that blowing ratios have small effect on spanwise-averaged film effectiveness at high free-stream turbulence intensity. However, an increase in free-stream turbulence intensity enhances significantly spanwise-averaged film effectiveness at low blowing ratio

  2. Epitaxial growth of fcc Ti films on Al(001) surfaces

    International Nuclear Information System (INIS)

    Saleh, A.A.; Shutthanandan, V.; Shivaparan, N.R.; Smith, R.J.; Tran, T.T.; Chambers, S.A.

    1997-01-01

    High-energy ion scattering (HEIS), x-ray photoelectron spectroscopy, and x-ray photoelectron diffraction (XPD) were used to study the growth of thin Ti films on Al(001) surfaces. The Al surface peak area in the backscattered ion spectrum of MeV He + ions, incident along the [00 bar 1] direction, was used to monitor the atomic structure of the Ti films during growth. An initial decrease in the area was observed indicating epitaxial film growth. This decrease continued up to a critical film thickness of about 5.5 ML, after which point the structure of the film changed. Titanium films 3, 5, and 9 ML thick were characterized using XPD in the same chamber. Both the HEIS and XPD results show that the Ti films grow with an fcc structure on Al(001). A tetragonal distortion of 2.4% in the fcc Ti film was measured using ions incident along the [10 bar 1] direction. Although there is a general similarity of fcc Ti growth on both Al(001) and Al(110), the submonolayer growth regime does show differences for the two surfaces. copyright 1997 The American Physical Society

  3. Growth dynamics of reactive-sputtering-deposited AlN films

    International Nuclear Information System (INIS)

    Auger, M.A.; Vazquez, L.; Sanchez, O.; Jergel, M.; Cuerno, R.; Castro, M.

    2005-01-01

    We have studied the surface kinetic roughening of AlN films grown on Si(100) substrates by dc reactive sputtering within the framework of the dynamic scaling theory. Films deposited under the same experimental conditions for different growth times were analyzed by atomic force microscopy and x-ray diffraction. The AlN films display a (002) preferred orientation. We have found two growth regimes with a crossover time of 36 min. In the first regime, the growth dynamics is unstable and the films present two types of textured domains, well textured and randomly oriented, respectively. In contrast, in the second regime the films are homogeneous and well textured, leading to a relative stabilization of the surface roughness characterized by a growth exponent β=0.37±0.03. In this regime a superrough scaling behavior is found with the following exponents: (i) Global exponents: roughness exponent α=1.2±0.2 and β=0.37±0.03 and coarsening exponent 1/z=0.32±0.05; (ii) local exponents: α loc =1, β loc =0.32±0.01. The differences between the growth modes are found to be related to the different main growth mechanisms dominating their growth dynamics: sticking anisotropy and shadowing, respectively

  4. ZnO film deposition on Al film and effects of deposition temperature on ZnO film growth characteristics

    International Nuclear Information System (INIS)

    Yoon, Giwan; Yim, Munhyuk; Kim, Donghyun; Linh, Mai; Chai, Dongkyu

    2004-01-01

    The effects of the deposition temperature on the growth characteristics of the ZnO films were studied for film bulk acoustic wave resonator (FBAR) device applications. All films were deposited using a radio frequency magnetron sputtering technique. It was found that the growth characteristics of ZnO films have a strong dependence on the deposition temperature from 25 to 350 deg. C. ZnO films deposited below 200 deg. C exhibited reasonably good columnar grain structures with highly preferred c-axis orientation while those above 200 deg. C showed very poor columnar grain structures with mixed-axis orientation. This study seems very useful for future FBAR device applications

  5. AlMn Transition Edge Sensors for Advanced ACTPol

    Science.gov (United States)

    Li, Dale; Austermann, Jason E.; Beall, James A.; Becker, Daniel T.; Duff, Shannon M.; Gallardo, Patricio A.; Henderson, Shawn W.; Hilton, Gene C.; Ho, Shuay-Pwu; Hubmayr, Johannes; Koopman, Brian J.; McMahon, Jeffrey J.; Nati, Federico; Niemack, Michael D.; Pappas, Christine G.; Salatino, Maria; Schmitt, Benjamin L.; Simon, Sara M.; Staggs, Suzanne T.; Van Lanen, Jeff; Ward, Jonathan T.; Wollack, Edward J.

    2016-07-01

    Advanced ACTPol (AdvACT) will use an array of multichroic polarization-sensitive AlMn transition edge sensor (TES) bolometers read out through time-division multiplexing. Aluminum doped with a low concentration of manganese can be deposited to a bulk film thickness for a more reliable superconducting critical temperature uniformity compared to thin bilayers. To build the TES, the AlMn alloy is deposited, over Nb wiring, to a specific thickness to set the TES normal resistance. The doping concentration of manganese coarsely defines the TES critical temperature, while a fine tuning is achieved by heating the deposited film to a specific temperature. The TES island is connected to the thermal bath via four silicon-nitride membranes, where their geometry defines the thermal conductance to the temperature of the bath. Lastly, the TES heat capacity is increased by addition of PdAu electrically connected to the AlMn film. Designs and performance characteristics of these AlMn TESs are presented for use in AdvACT.

  6. AlMn Transition Edge Sensors for Advanced ACTPol

    Science.gov (United States)

    Li, Dale; Austermann, Jason E.; Beall, James A.; Tucker, Daniel T.; Duff, Shannon M.; Gallardo, Patricio A.; Henderson, Shawn W.; Hilton, Gene C.; Ho, Shuay-Pwu; Hubmayr, Johannes; hide

    2016-01-01

    Advanced ACTPol (Adv ACT) will use an array of multichroic polarization sensitive AIMn transition edge sensor (TES) bolometers read out through time-division multiplexing. Aluminum doped with a low concentration of manganese can be deposited to a bulk film thickness for a more reliable superconducting critical temperature uniformity compared to thin bilayers. To build the TES, the AlMn alloy is deposited, over Nb wiring, to a specific thickness to set the TES normal resistance. The doping concentration of manganese coarsely defines the TES critical temperature, while a fine tuning is achieved by heating the deposited film to a specific temperature. The TES island is connected to the thermal bath via four silicon-nitride membranes, where their geometry defines the thermal conductance to the temperature of the bath. Lastly, the TES heat capacity is increased by addition of PdAu electrically connected to the AlMn film. Designs and performance characteristics of these AlMn TESs are presented for use in AdvACT.

  7. Growth of anodic films on niobium

    International Nuclear Information System (INIS)

    Gomes, M.A.B.; Bulhoes, L.O.S.

    1988-01-01

    The analysis of the response of the galvanostatic growth of anodic films on niobium metal in aqueous solutions is shown. The first spark voltage showed a dependence upon value of current density that could be explained as the incorporation of anions into the film. (M.J.C.) [pt

  8. Electrodeposition of nanocrystalline CdSe thin films from dimethyl sulfoxide solution: Nucleation and growth mechanism, structural and optical studies

    International Nuclear Information System (INIS)

    Henriquez, R.; Badan, A.; Grez, P.; Munoz, E.; Vera, J.; Dalchiele, E.A.; Marotti, R.E.; Gomez, H.

    2011-01-01

    Highlights: → Electrodeposition of CdSe nanocrystalline semiconductor thin films. → Polycrystalline wurtzite structure with a slight (1010) preferred orientation. → Absorption edge shifts in the optical properties due to quantum confinement effects. - Abstract: Cadmium selenide (CdSe) nanocrystalline semiconductor thin films have been synthesized by electrodeposition at controlled potential based in the electrochemical reduction process of molecular selenium in dimethyl sulfoxide (DMSO) solution. The nucleation and growth mechanism of this process has been studied. The XRD pattern shows a characteristic polycrystalline hexagonal wurtzite structure with a slight (1 0 1 0) crystallographic preferred orientation. The crystallite size of nanocrystalline CdSe thin films can be simply controlled by the electrodeposition potential. A quantum size effect is deduced from the correlation between the band gap energy and the crystallite size.

  9. Growth of ultra-thin Ag films on Ni(111)

    Energy Technology Data Exchange (ETDEWEB)

    Meyer, Axel; Flege, Jan Ingo; Falta, Jens [Institute of Solid State Physics, University of Bremen, 28359 Bremen (Germany); Senanayake, Sanjaya [Chemistry Department, Brookhaven National Laboratory, Upton, NY 11973-5000 (United States); Alamgir, Faisal [Georgia Institute of Technology, Atlanta, GA 30332-0245 (United States)

    2009-07-01

    The physical and chemical properties of ultra-thin metal films on metallic substrates strongly depend on their morphology and the structure of the buried interface. Hence, detailed knowledge of the growth mechanisms is essential for the creation of new functional materials with novel characteristics. In this contribution, we present a comprehensive structural study of the growth and properties of epitaxial Ag films on Ni(111) by in-situ low energy electron microscopy (LEEM). For lower temperatures, the growth of the Ag film proceeds in a Stranski-Krastanov mode after completion of the wetting layer, while for higher temperatures layer-by-layer growth is observed. Quantitative information about the film structure were obtained by analyzing the intensity-voltage (I-V) dependence of the local electron reflectivity (IV-LEEM). The corresponding I(V) spectra showed intensity oscillations depending on local thickness of the Ag film due to the quantum size effect (QSE). Modeling of the I(V) spectra was performed both within the framework of a one-dimensional Kronig-Penney model and multiple scattering IV-LEED calculations. The results of both approaches concerning the variation of the layer spacings and interface characteristics for different temperatures and film thicknesses will be discussed.

  10. Lattice positions of Sn in Cu2ZnSnS4 nanoparticles and thin films studied by synchrotron X-ray absorption near edge structure analysis

    Science.gov (United States)

    Zillner, E.; Paul, A.; Jutimoosik, J.; Chandarak, S.; Monnor, T.; Rujirawat, S.; Yimnirun, R.; Lin, X. Z.; Ennaoui, A.; Dittrich, Th.; Lux-Steiner, M.

    2013-06-01

    Lattice positions of Sn in kesterite Cu2ZnSnS4 and Cu2SnS3 nanoparticles and thin films were investigated by XANES (x-ray absorption near edge structure) analysis at the S K-edge. XANES spectra were analyzed by comparison with simulations taking into account anti-site defects and vacancies. Annealing of Cu2ZnSnS4 nanoparticle thin films led to a decrease of Sn at its native and defect sites. The results show that XANES analysis at the S K-edge is a sensitive tool for the investigation of defect sites, being critical in kesterite thin film solar cells.

  11. Growth and etching characteristics of gallium oxide thin films by pulsed laser deposition

    International Nuclear Information System (INIS)

    Ou, Sin-Liang; Wuu, Dong-Sing; Fu, Yu-Chuan; Liu, Shu-Ping; Horng, Ray-Hua; Liu, Lei; Feng, Zhe-Chuan

    2012-01-01

    Highlights: ► The β-Ga2O3 thin films are prepared by pulsed laser deposition. ► The substrate temperature affects the structural, optical and etching properties of the grown films. ► The optical transmittance and band gap of the films increased with increasing the substrate temperature. ► The etching treatments for gallium oxide are performed in 49 mol% HF solution at room temperature. ► The gallium oxide thin film grown at 400 °C has the highest etching rate of 490 nm s −1 . - Abstract: The gallium oxide films were deposited on (0 0 1) sapphire at various substrate temperatures from 400 to 1000 °C by pulsed laser deposition using a KrF excimer laser. The etching treatments for as-grown gallium oxide were performed in a 49 mol% HF solution at room temperature. The structural, optical and etching properties of the grown films were investigated in terms of high resolution X-ray diffraction, optical transmittance, atomic force microscopy, and X-ray photoelectron spectroscopy. The phase transition from amorphous to polycrystalline β-Ga 2 O 3 structure was observed with increasing growth temperature. From the optical transmittance measurements, the films grown at 550–1000 °C exhibit a clear absorption edge at deep ultraviolet region around 250–275 nm wavelength. It was found that the optical band gap of gallium oxide films increased from 4.56 to 4.87 eV when the substrate temperature increased from 400 to 1000 °C. As the substrate temperature increases, the crystallinity of gallium oxide film is enhanced and the etching rate is decreased. The high etching rate of 490 nm s −1 for gallium oxide film grown at 400 °C could be due to its amorphous phase, which is referred to higher void ratio and looser atomic structure.

  12. Growth Performances of Female and Male Holstein Calves Fed Milk and Milk Replacers

    Directory of Open Access Journals (Sweden)

    Tahir BAYRIL

    2015-01-01

    Full Text Available The objective of this study was to compare growth performances of male and female Holstein calves fed milk and milk replacers. A total of 60 Holstein calves were used in the study. Calves were divided into three equal groups. In each group, there were 10 female and 10 male calves. Calves were offered colostrum for 3 days after birth and were weighed at fourth day for the trial. Initial body weights of calves in dietary treatments were statistically similar. The first, second and third groups were fed milk, milk replacer-I (CP 21% and CF 16.5% and milk replacer-II (CP 24% and CF 18%, respectively. In addition to milk and milk replacers, calves were supplemented with ad libitum concentrate feed and alfalfa. Dietary treatment was significantly effective (P<0.05 on body weight of calves at 60 days of age. In conclusion, growth performances of calves increased with increasing protein content of milk replacer had better than those of calves fed milk replacer containing low-protein. Therefore, during the suckling period, in feeding of Holstein calves, milk or milk replacer containing high-protein should be preferred primarily.

  13. Post-growth annealing of zinc oxide thin films pulsed laser deposited under enhanced oxygen pressure on quartz and silicon substrates

    International Nuclear Information System (INIS)

    Rusop, M.; Uma, K.; Soga, T.; Jimbo, T.

    2006-01-01

    Zinc oxide (ZnO) thin films have been prepared by pulsed laser deposition (PLD) technique at room temperature on quartz and single crystal silicon (1 0 0) substrates. The oxygen ambient gas pressure was attained at 6 Torr during the deposition. The deposited films were post-growth annealed in air at various annealing temperatures for 30 min. The X-ray diffraction (XRD), optical and electrical properties have been measured to study the properties of the films as a function of annealing temperatures. XRD has shown the strength of (0 0 2) peak increases and FWHM value decreases as the annealing temperatures increases from 200 to 600 deg. C. The post-growth annealed at 600 deg. C show dominant c-axis oriented hexagonal wurtize crystal structure and exhibit high average transmittance about 85% in the visible region and very sharp absorption edge at 376 nm with energy band gap of approximately 3.46 eV. Electrical measurement indicates the resistivity decreases with the annealing temperatures up to 600 deg. C, after which it increases with higher annealing temperatures at 800 deg. C. The complex of oxygen vacancy in the ZnO films may be the source of low conductivity in undoped ZnO films

  14. Role of nucleation in nanodiamond film growth

    International Nuclear Information System (INIS)

    Lifshitz, Y.; Lee, C.H.; Wu, Y.; Zhang, W.J.; Bello, I.; Lee, S.T.

    2006-01-01

    Nanodiamond films were deposited using different microwave plasma chemical vapor deposition schemes following several nucleation pretreatment methods. The nucleation efficiency and the films structure were investigated using scanning and transmission electron microscopy and Raman spectroscopy. C 2 dimer growth (CH 4 and H 2 in 90% Ar) cannot nucleate diamond and works only on existing diamond surfaces. The methyl radical process (up to 20% CH 4 in H 2 ) allows some nucleation probability on appropriate substrates. Prolonged bias enhanced nucleation initiates both diamond nucleation and growth. C 2 dimer growth results in pure nanodiamond free of amorphous carbon, while prolonged bias enhanced nucleation forms an amorphous carbon/nanodiamond composite

  15. Fundamental absorption edge of NiO nanocrystals

    Energy Technology Data Exchange (ETDEWEB)

    Sokolov, V.I., E-mail: visokolov@imp.uran.ru [Institute of Metal Physics, Ural Branch of RAS, S. Kovalevskaya Street 18, 620990 Yekaterinburg (Russian Federation); Druzhinin, A.V. [Institute of Metal Physics, Ural Branch of RAS, S. Kovalevskaya Street 18, 620990 Yekaterinburg (Russian Federation); Kim, G.A. [Institute of Organic Synthesis Ural Branch of RAS, S. Kovalevskaya Street 20, 620990 Yekaterinburg (Russian Federation); Gruzdev, N.B.; Yermakov, A.Ye.; Uimin, M.A.; Byzov, I.V.; Shchegoleva, N.N.; Vykhodets, V.B.; Kurennykh, T.E. [Institute of Metal Physics, Ural Branch of RAS, S. Kovalevskaya Street 18, 620990 Yekaterinburg (Russian Federation)

    2013-12-01

    NiO nanocrystals with the average size of 5, 10 and 25 nm were synthesized by gas-condensation method. The well-defined increase of the optical density D near the fundamental absorption edge of NiO nanocrystals in the range of 3.5–4.0 eV observed after the annealing in air is caused by the oxygen content growth. It is the direct experimental evidence of the fact that p—d charge transfer transitions form the fundamental absorption edge.

  16. Fundamental absorption edge of NiO nanocrystals

    International Nuclear Information System (INIS)

    Sokolov, V.I.; Druzhinin, A.V.; Kim, G.A.; Gruzdev, N.B.; Yermakov, A.Ye.; Uimin, M.A.; Byzov, I.V.; Shchegoleva, N.N.; Vykhodets, V.B.; Kurennykh, T.E.

    2013-01-01

    NiO nanocrystals with the average size of 5, 10 and 25 nm were synthesized by gas-condensation method. The well-defined increase of the optical density D near the fundamental absorption edge of NiO nanocrystals in the range of 3.5–4.0 eV observed after the annealing in air is caused by the oxygen content growth. It is the direct experimental evidence of the fact that p—d charge transfer transitions form the fundamental absorption edge

  17. Growth model of Au films on Ru(001)

    International Nuclear Information System (INIS)

    Canessa, E.; Calmetta, A.

    1992-06-01

    In an attempt to find generic features on the fractal growth of Au films deposited on Ru(001), a simple simulation model based on irreversible diffusion-limited aggregation (DLA) is discussed. Highly irregular two-dimensional dentritic islands of Au particles that gradually grow on a larger host lattice of Ru particles and have fractal dimension d f approx. 1.70 each, are generated via a multiple had-hoc version of the DLA algorithm for single aggregates. Annealing effects on the islands morphology are reproduced assuming different sticking probabilities at nearest-neighbour lattice sites of Au films on Ru(001). Using simulation data, islands growth are described in analogy to diffusion-limited, precipitate growth with soft impingement of precipities. This leads to analyse thin film island growth kinetics in such fractal systems and to predict a main peak in scattering intensity patterns due to interisland interference. (author). 12 refs, 4 figs

  18. Growth in VLBW infants fed predominantly fortified maternal and donor human milk diets: a retrospective cohort study

    Directory of Open Access Journals (Sweden)

    Colaizy Tarah T

    2012-08-01

    Full Text Available Abstract Background To determine the effect of human milk, maternal and donor, on in-hospital growth of very low birthweight (VLBW infants. We performed a retrospective cohort study comparing in-hospital growth in VLBW infants by proportion of human milk diet, including subgroup analysis by maternal or donor milk type. Primary outcome was change in weight z-score from birth to hospital discharge. Methods Retrospective cohort study. Results 171 infants with median gestational age 27 weeks (IQR 25.4, 28.9 and median birthweight 899 g (IQR 724, 1064 were included. 97% of infants received human milk, 51% received > 75% of all enteral intake as human milk. 16% of infants were small-for-gestational age (SGA, th percentile at birth, and 34% of infants were SGA at discharge. Infants fed >75% human milk had a greater negative change in weight z-score from birth to discharge compared to infants receiving 75% human milk, there was no significant difference in change in weight z-score by milk type (donor −0.84, maternal −0.56, mixed −0.45, p = 0.54. Infants receiving >75% donor milk had higher rates of SGA status at discharge than those fed maternal or mixed milk (56% vs. 35% (maternal, 21% (mixed, p = 0.08. Conclusions VLBW infants can grow appropriately when fed predominantly fortified human milk. However, VLBW infants fed >75% human milk are at greater risk of poor growth than those fed less human milk. This risk may be highest in those fed predominantly donor human milk.

  19. Comprehensive study of growth mechanism and properties of low Zn content Cd_1_-_xZn_xS thin films by chemical bath

    International Nuclear Information System (INIS)

    Rodriguez, Carlos Anibal; Sandoval-Paz, Myrna Guadalupe; Saavedra, Renato; De la Carrera, Francisco; Trejo-Cruz, Cuauhthemoc; Aragon, Luis E.; Sirena, Martin; Delplancke, Marie-Paule; Carrasco, Claudia

    2016-01-01

    Cd_1_-_xZn_xS thin films have been studied extensively as window layers for solar cell applications. However, a mismatch between the Cd_1_-_xZn_xS and copper-indium-gallium-selenide absorber layers increases with Zn film concentration, which reduces the device efficiency. In this work, Cd_1_-_xZn_xS thin films with low Zn concentrations were analyzed. The effect of the addition of different molar Zn concentrations to the reaction mixture on the growth mechanism of Cd_1_-_xZn_xS thin films and the influence of these mechanisms on structural, optical and morphological properties of the films has been studied. Cd_1_-_xZn_xS thin films were synthesized by chemical bath deposition using an ammonia-free alkaline solution. Microstructural analysis by X-ray diffraction showed that all deposited films grew with hexagonal structure and crystallite sizes decreased as the Zn concentration in the film increased. Optical measurements indicated a high optical transmission between 75% and 90% for wavelengths above the absorption edge. Band gap value increased from 2.48 eV to 2.62 eV, and the refractive index values for Cd_1_-_xZn_xS thin films decreased as the Zn increased. These changes in films and properties are related to a modification in growth mechanism of the Cd_1_-_xZn_xS thin films, with the influence of Zn(OH)_2 formation being more important as Zn in solution increases. (author)

  20. Relationship between growth and total nucleic acids in juvenile pink salmon, Oncorhynchus gorbuscha, fed crude oil contaminated food

    International Nuclear Information System (INIS)

    Wang Shiao, Y.; Lum, J.L.; Carls, M.G.; Rice, S.D.

    1993-01-01

    Total nucleic acids of junvenile pink salmon fed crude oil contaminated food were analyzed to deteremine if nucleic acid measurements can be used to evaluate growth of fish collected at oil spill sites. In general, the nucleic acid concentration (μg per mg dry weight) of salmon fry fed food contaminated with either 0.37 or 2.78 mg crude oil/g food was not significantly affected. However, RNA concentration of fry fed food contaminated with 34.83 mg/g was reduced whereas DNA concentration increased. Results over 8 weeks indicate decreased protein synthesis and cell content but maintenance of cell integrity in these fish. Growth was inversely related to the level of crude oil contamination in the food. The significant correlations between measured growth and RNA/DNA ratios and RNA contents (mg RNA per mm fork length) suggest that nucleic acid measurement can be used to compare growth of fish collected from the field. 23 refs., 4 figs

  1. [Effects of plastic film mulching and nitrogen application rate on net global warming potential in semiarid rain-fed maize cropland].

    Science.gov (United States)

    Liu, Jian Can; Wang, Ze Lin; Yue, Shan Chao; Li, Shi Qing

    2018-04-01

    A one-year field experiment was conducted to evaluate the effects of plastic film mulching (FM) and nitrogen application rates applied to rain-fed maize fields on net global warming potential (Net GWP) and greenhouse gas intensity (GHGI) at the Changwu Agricultural and Ecological Experimental Station. Both GWP and GHGI were affected by the plastic film mulching and nitrogen application rate. Under the FM treatment, maize yield ranged from 1643 to 16699 kg·hm -2 , the net GWP (CO 2 -eq) ranged from 595 to 4376 kg·hm -2 ·a -1 , and the GHGI (CO 2 -eq) ranged from 213 to 358 kg·t -1 . The grain yield of maize, net GWP and GHGI for the UM (no mulching) treatment were 956 to 8821 kg·hm -2 , 342 to 4004 kg·hm -2 ·a -1 and 204 to 520 kg·t -1 , respectively. The results suggested that plastic film mulching could simultaneously improve grain yield and decrease GHGI in rain-fed cropland along with nitrogen fertilizer of 250 kg·hm -2 .

  2. Dynamic anthropogenic edge effects on the distribution and diversity of fungi in fragmented old-growth forests.

    Science.gov (United States)

    Ruete, Alejandro; Snäll, Tord; Jönsson, Mari

    2016-07-01

    Diversity patterns and dynamics at forest edges are not well understood. We disentangle the relative importance of edge-effect variables on spatio-temporal patterns in species richness and occupancy of deadwood-dwelling fungi in fragmented old-growth forests. We related richness and log occupancy by 10 old-growth forest indicator fungi and by two common fungi to log conditions in natural and anthropogenic edge habitats of 31 old-growth Picea abies forest stands in central Sweden. We compared edge-to-interior gradients (100 m) to the forest interior (beyond 100 m), and we analyzed stand-level changes after 10 yr. Both richness and occupancy of logs by indicator species was negatively related to adjacent young clear-cut edges, but this effect decreased with increasing clear-cut age. The occupancy of logs by indicator species also increased with increasing distance to the natural edges. In contrast, the occupancy of logs by common species was positively related or unrelated to distance to clear-cut edges regardless of the edge age, and this was partly explained by fungal specificity to substrate quality. Stand-level mean richness and mean occupancy of logs did not change for indicator or common species over a decade. By illustrating the importance of spatial and temporal dimensions of edge effects, we extend the general understanding of the distribution and diversity of substrate-confined fungi in fragmented old-growth forests. Our results highlight the importance of longer forest rotation times adjacent to small protected areas and forest set-asides, where it may take more than 50 yr for indicator species richness levels to recover to occupancy levels observed in the forest interior. Also, non-simultaneous clear-cutting of surrounding productive forests in a way that reduces the edge effect over time (i.e., dynamic buffers) may increase the effective core area of small forest set-asides and improve their performance on protecting species of special concern for

  3. Facilitating control of fed-batch fermentation processes by monitoring the growth rates of saccharomyces cerevisiae

    NARCIS (Netherlands)

    Keulers, M.L.B.; Ariaans, L.J.J.M.; Soeterboek, R.; Giuseppin, M.

    1994-01-01

    In this paper we present a growth rate controller for a fed-batch bioprocess. An observer estimates the growth rate. The observer is based on knowledge about the stoichiometric relations of the process. Furthermore, the observer needs online measurements of the oxygen uptake rate and the

  4. Zirconia thin films from aqueous precursors: Processing, microstructural development, and epitaxial growth

    International Nuclear Information System (INIS)

    Miller, K.T.

    1991-01-01

    Thin films of ZrO 2 (Y 2 O 3 ) were prepared from aqueous salt precursors by spin coating. Films were pyrolyzed to produce porous polycrystalline thin films of 5-10 nm grain size. Subsequent microstructural development depends greatly upon the nature of the substrate. Upon randomly oriented sapphire, the films initially sintered to full density; further heat treatment and grain growth causes these films to break into interconnected islands and finally isolated particles. Thermodynamic calculations predict that breakup is energetically favorable when the grain-size film-thickness ratio exceeds a critical value. Upon basal-plane-oriented sapphire, grain growth and breakup prefer the (100) oriented grains, presumably because this orientation is a special interface of low energy. The isolated, oriented grains produced by film breakup act as seeds for the growth of newly deposited material. Upon (100) cubic zirconia, true epitaxial films develop. Epitaxial growth was observed for lattice mismatches up to 1.59%. Growth proceeds from a fine epitaxial layer which is produced during the initial stages of heat treatment, consuming the porous polycrystalline material and producing a dense epitaxial thin film whose misfit is accommodated by a combination of film strain and misfit dislocations

  5. Effects of graphene imperfections on the structure of self-assembled pentacene films

    International Nuclear Information System (INIS)

    Jung, W; Ahn, S J; Lee, S Y; Kim, Y; Shin, H-C; Moon, Y; Park, C-Y; Ahn, J R; Woo, S H

    2015-01-01

    The quality of pentacene films in pentacene-based devices significantly affects their performance. In this report, the effects of various defects in graphene on a pentacene film were studied with scanning tunneling microscopy. The two most common defects found in the epitaxial graphene grown on SiC(0 0 0 1) substrates were subsurface carbon nanotube (CNT) defects and step edges. The most significant perturbation of the pentacene films was induced by step edges between single-layer and bilayer graphene domains, while the effect of step edges between single-layer domains was marginal. The subsurface CNT defects slightly distorted the structure of the single-layer pentacene, but the influence of such defects decreased as the thickness of the pentacene film increased. These results suggest that the uniformity of the graphene layer is the most important parameter in the growth of high-quality pentacene films on graphene. (paper)

  6. The growth performance of Jade Tiger cultured abalone fed diets supplemented with fish oil and vegetable oils.

    Science.gov (United States)

    Mateos, Hintsa T; Lewandowski, Paul A; Su, Xiao Q

    2013-04-01

    The effects of fish oil (FO) supplementation and the dietary replacement of FO with flaxseed oil (FlaxO) and canola oil (CO) on the growth of cultured abalone was investigated. The study involved three growth experiments: (E1) diets containing 0.5, 1.0, 1.5, 2.0 and 2.5% of FO, respectively; (E2) diets in which FO was serially replaced by 25, 50, 75 and 100% FlaxO, respectively; and (E3) diets in which FO was serially replaced by 25, 50, 75 and 100% CO, respectively. In Experiment 1, abalone fed a diet supplemented with 1.5% FO showed a significantly higher (121.2 ± 1.1 mg day(-1)) daily growth rate of weight (DGRw ) compared to control (70.1 ± 1.71 mg day(-1)). In Experiment 2, abalone fed 1.5% FO diet and diets containing 25-75% FlaxO showed no significant differences in DGRw. The diet containing 100% FlaxO showed significantly lower (63.3 ± 6.7 mg day(-1)) DGRw. In Experiment 3, abalone fed diets containing 25% and 50% CO showed similar DGRw as those fed a 1.5% FO diet. The diet containing 75% and 100% CO showed significantly lower (63.7 ± 5.0 to 95.4 ± 5.1 mg day(-1)) DGRw. Supplementation with 1.5% of dietary FO can improve growth performance in cultured abalone. It is feasible to replace 75% of dietary FO with FlaxO and 50% of dietary FO with CO, without negative effect on growth performance. © 2012 Society of Chemical Industry.

  7. Crystalline and electronic structure of epitaxial γ-Al2O3 films

    International Nuclear Information System (INIS)

    Wu, Huiyan; Lu, Dawei; Zhu, Kerong; Xu, Guoyong; Wang, Hu

    2013-01-01

    Epitaxial γ-Al 2 O 3 films were fabricated on SrTiO 3 (1 0 0) substrates using pulsed laser deposition (PLD) technique. The high quality of epitaxial growth γ-Al 2 O 3 films was confirmed by X-ray diffraction (XRD). Atomic force microscopy (AFM) images indicated the smooth surfaces and the step-flow growth of the films. In order to illuminate the electronic properties and the local structure of the epitaxial γ-Al 2 O 3 , we experimentally measured the X-ray absorption near-edge structure (XANES) spectrum at the O K-edge and compared the spectrum with the theoretical simulations by using various structure models. Our results based on XANES spectrum analysis indicated that the structure of the epitaxial γ-Al 2 O 3 film was a defective spinel with Al vacancies, which prefer to be located at the octahedral sites

  8. Temperature-dependent evolution of chemisorbed digermane in Ge thin film growth

    International Nuclear Information System (INIS)

    Eres, D.; Sharp, J.W.

    1992-01-01

    The formation and evolution of chemisorbed digermane layers in context with germanium thin film growth was investigated by time- resolved surface reflectometry. Modulation of the source gas supply made possible the separation and independent study of the temperature dependence of the adsorption and desorption processes. The regeneration of active sites by molecular hydrogen desorption was identified as the rate-limiting step at low substrate temperatures. A dynamic method of thin film growth was demonstrated by repetitively replenishing the active film growth sites regenerated between two successive source gas pulses. The film growth rate was shown to be related to the substrate temperature and the delay time between successive source gas pulses

  9. Enhancing performance of a linear dielectric based concentrating photovoltaic system using a reflective film along the edge

    International Nuclear Information System (INIS)

    Baig, Hasan; Sarmah, Nabin; Chemisana, Daniel; Rosell, Joan; Mallick, Tapas K.

    2014-01-01

    In the present study, we model and analyse the performance of a dielectric based linear concentrating photovoltaic system using ray tracing and finite element methods. The results obtained are compared with the experiments. The system under study is a linear asymmetric CPC (Compound Parabolic Concentrator) designed to operate under extreme incident angles of 0° and 55° and have a geometrical concentration ratio of 2.8×. Initial experiments showed a maximum PR (power ratio) of 2.2 compared to a non concentrating counterpart. An improvement to this has been proposed and verified by adding a reflective film along the edges of the concentrator to capture the escaping rays and minimise optical losses. The addition of the reflective film changes the incoming distribution on the solar cell. Results show an increase of 16% in the average power output while using this reflective film. On including the thermal effects it was found that the overall benefit changes to about 6% while using a reflective film. Additionally, the effects of the non-uniformity of the incoming radiation are also analysed and reported for both the cases. It is found that adding the reflective film drops the maximum power at the output by only 0.5% due to the effect of non-uniformity. - Highlights: • Optical, thermal and electrical analysis of a concentrating photovoltaic system. • Improvement in performance by use of reflective film along the edge. • Experimental validation of results. • Effects of non-uniform illumination on the performance of the CPV system. • Impact of temperature profile on the overall performance

  10. Formation of resonant bonding during growth of ultrathin GeTe films

    NARCIS (Netherlands)

    Wang, Ruining; Zhang, Wei; Momand, Jamo; Ronneberger, Ider; Boschker, Jos E.; Mazzarello, Riccardo; Kooi, Bart J.; Riechert, Henning; Wuttig, Matthias; Calarco, Raffaella

    2017-01-01

    A highly unconventional growth scenario is reported upon deposition of GeTe films on the hydrogen passivated Si(111) surface. Initially, an amorphous film forms for growth parameters that should yield a crystalline material. The entire amorphous film then crystallizes once a critical thickness of

  11. Oral microbial profile discriminates breast-fed from formula-fed infants.

    Science.gov (United States)

    Holgerson, Pernilla L; Vestman, Nelly R; Claesson, Rolf; Ohman, Carina; Domellöf, Magnus; Tanner, Anne C R; Hernell, Olle; Johansson, Ingegerd

    2013-02-01

    Little is known about the effect of diet on the oral microbiota of infants, although diet is known to affect the gut microbiota. The aims of the present study were to compare the oral microbiota in breast-fed and formula-fed infants, and investigate growth inhibition of streptococci by infant-isolated lactobacilli. A total of 207 mothers consented to participation of their 3-month-old infants. A total of 146 (70.5%) infants were exclusively and 38 (18.4%) partially breast-fed, and 23 (11.1%) were exclusively formula-fed. Saliva from all of their infants was cultured for Lactobacillus species, with isolate identifications from 21 infants. Lactobacillus isolates were tested for their ability to suppress Streptococcus mutans and S sanguinis. Oral swabs from 73 infants were analysed by the Human Oral Microbe Identification Microarray (HOMIM) and by quantitative polymerase chain reaction for Lactobacillus gasseri. Lactobacilli were cultured from 27.8% of exclusively and partially breast-fed infants, but not from formula-fed infants. The prevalence of 14 HOMIM-detected taxa, and total salivary lactobacilli counts differed by feeding method. Multivariate modelling of HOMIM-detected bacteria and possible confounders clustered samples from breast-fed infants separately from formula-fed infants. The microbiota of breast-fed infants differed based on vaginal or C-section delivery. Isolates of L plantarum, L gasseri, and L vaginalis inhibited growth of the cariogenic S mutans and the commensal S sanguinis: L plantarum >L gasseri >L vaginalis. The microbiota of the mouth differs between 3-month-old breast-fed and formula-fed infants. Possible mechanisms for microbial differences observed include species suppression by lactobacilli indigenous to breast milk.

  12. Modelling of epitaxial film growth with an Ehrlich-Schwoebel barrier dependent on the step height

    International Nuclear Information System (INIS)

    Leal, F F; Ferreira, S C; Ferreira, S O

    2011-01-01

    The formation of mounded surfaces in epitaxial growth is attributed to the presence of barriers against interlayer diffusion in the terrace edges, known as Ehrlich-Schwoebel (ES) barriers. We investigate a model for epitaxial growth using an ES barrier explicitly dependent on the step height. Our model has an intrinsic topological step barrier even in the absence of an explicit ES barrier. We show that mounded morphologies can be obtained even for a small barrier while a self-affine growth, consistent with the Villain-Lai-Das Sarma equation, is observed in the absence of an explicit step barrier. The mounded surfaces are described by a super-roughness dynamical scaling characterized by locally smooth (facetted) surfaces and a global roughness exponent α > 1. The thin film limit is featured by surfaces with self-assembled three-dimensional structures having an aspect ratio (height/width) that may increase or decrease with temperature depending on the strength of the step barrier. (fast track communication)

  13. Correlating defect density with growth time in continuous graphene films.

    Science.gov (United States)

    Kang, Cheong; Jung, Da Hee; Nam, Ji Eun; Lee, Jin Seok

    2014-12-01

    We report that graphene flakes and films which were synthesized by copper-catalyzed atmospheric pressure chemical vapor deposition (APCVD) method using a mixture of Ar, H2, and CH4 gases. It was found that variations in the reaction parameters, such as reaction temperature, annealing time, and growth time, influenced the domain size of as-grown graphene. Besides, the reaction parameters influenced the number of layers, degree of defects and uniformity of the graphene films. The increase in growth temperature and annealing time tends to accelerate the graphene growth rate and increase the diffusion length, respectively, thereby increasing the average size of graphene domains. In addition, we confirmed that the number of pinholes reduced with increase in the growth time. Micro-Raman analysis of the as-grown graphene films confirmed that the continuous graphene monolayer film with low defects and high uniformity could be obtained with prolonged reaction time, under the appropriate annealing time and growth temperature.

  14. Growth of organic films on indoor surfaces

    DEFF Research Database (Denmark)

    Weschler, Charles J.; Nazaroff, W. W.

    2017-01-01

    predictions indicate that film growth would primarily be influenced by the gas-phase concentration of SVOCs with octanol-air partitioning (Koa) values in the approximate range 10≤log Koa≤13. Within the relevant range, SVOCs with lower values will equilibrate with the surface film more rapidly. Over time...

  15. Preferential growth of short aligned, metallic-rich single-walled carbon nanotubes from perpendicular layered double hydroxide film.

    Science.gov (United States)

    Zhao, Meng-Qiang; Tian, Gui-Li; Zhang, Qiang; Huang, Jia-Qi; Nie, Jing-Qi; Wei, Fei

    2012-04-07

    Direct bulk growth of single-walled carbon nanotubes (SWCNTs) with required properties, such as diameter, length, and chirality, is the first step to realize their advanced applications in electrical and optical devices, transparent conductive films, and high-performance field-effect transistors. Preferential growth of short aligned, metallic-rich SWCNTs is a great challenge to the carbon nanotube community. We report the bulk preferential growth of short aligned SWCNTs from perpendicular Mo-containing FeMgAl layered double hydroxide (LDH) film by a facile thermal chemical vapor deposition with CH(4) as carbon source. The growth of the short aligned SWCNTs showed a decreased growth velocity with an initial value of 1.9 nm s(-1). Such a low growth velocity made it possible to get aligned SWCNTs shorter than 1 μm with a growth duration less than 15 min. Raman spectra with different excitation wavelengths indicated that the as-grown short aligned SWCNTs showed high selectivity of metallic SWCNTs. Various kinds of materials, such as mica, quartz, Cu foil, and carbon fiber, can serve as the substrates for the growth of perpendicular FeMoMgAl LDH films and also the growth of the short aligned SWCNTs subsequently. These findings highlight the easy route for bulk preferential growth of aligned metallic-rich SWCNTs with well defined length for further bulk characterization and applications. This journal is © The Royal Society of Chemistry 2012

  16. Growth Mechanism of Cluster-Assembled Surfaces: From Submonolayer to Thin-Film Regime

    Science.gov (United States)

    Borghi, Francesca; Podestà, Alessandro; Piazzoni, Claudio; Milani, Paolo

    2018-04-01

    Nanostructured films obtained by assembling preformed atomic clusters are of strategic importance for a wide variety of applications. The deposition of clusters produced in the gas phase onto a substrate offers the possibility to control and engineer the structural and functional properties of the cluster-assembled films. To date, the microscopic mechanisms underlying the growth and structuring of cluster-assembled films are poorly understood, and, in particular, the transition from the submonolayer to the thin-film regime is experimentally unexplored. Here we report the systematic characterization by atomic force microscopy of the evolution of the structural properties of cluster-assembled films deposited by supersonic cluster beam deposition. As a paradigm of nanostructured systems, we focus our attention on cluster-assembled zirconia films, investigating the influence of the building block dimensions on the growth mechanisms and roughening of the thin films, following the growth process from the early stages of the submonolayer to the thin-film regime. Our results demonstrate that the growth dynamics in the submonolayer regime determines different morphological properties of the cluster-assembled thin film. The evolution of the roughness with the number of deposited clusters reproduces the growth exponent of the ballistic deposition in the 2 +1 model from the submonolayer to the thin-film regime.

  17. Dopant activation in Sn-doped Ga{sub 2}O{sub 3} investigated by X-ray absorption spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Siah, S. C., E-mail: sincheng@alum.mit.edu; Brandt, R. E.; Jaramillo, R.; Buonassisi, T., E-mail: buonassisi@mit.edu [Massachusetts Institute of Technology, Cambridge, Massachusetts 02139 (United States); Lim, K. [SLAC National Accelerator Laboratory, Stanford Synchrotron Radiation Lightsource, Menlo Park, California 94025 (United States); Department of Materials Science and Engineering, Stanford University, Stanford, California 94305 (United States); Schelhas, L. T.; Toney, M. F. [SLAC National Accelerator Laboratory, Stanford Synchrotron Radiation Lightsource, Menlo Park, California 94025 (United States); Heinemann, M. D. [PVcomB, Helmholtz-Zentrum Berlin, 12489 Berlin (Germany); Chua, D.; Gordon, R. G. [Department of Chemistry Materials Science and Chemical Biology, Harvard University, Cambridge, Massachusetts 02138 (United States); Wright, J.; Segre, C. U. [Physics Department and CSRRI, Illinois Institute of Technology, Chicago, Illinois 60616 (United States); Perkins, J. D. [National Renewable Energy Laboratory, Golden, Colorado 80401 (United States)

    2015-12-21

    Doping activity in both beta-phase (β-) and amorphous (a-) Sn-doped gallium oxide (Ga{sub 2}O{sub 3}:Sn) is investigated by X-ray absorption spectroscopy (XAS). A single crystal of β-Ga{sub 2}O{sub 3}:Sn grown using edge-defined film-fed growth at 1725 °C is compared with amorphous Ga{sub 2}O{sub 3}:Sn films deposited at low temperature (<300 °C). Our XAS analyses indicate that activated Sn dopant atoms in conductive single crystal β-Ga{sub 2}O{sub 3}:Sn are present as Sn{sup 4+}, preferentially substituting for Ga at the octahedral site, as predicted by theoretical calculations. In contrast, inactive Sn atoms in resistive a-Ga{sub 2}O{sub 3}:Sn are present in either +2 or +4 charge states depending on growth conditions. These observations suggest the importance of growing Ga{sub 2}O{sub 3}:Sn at high temperature to obtain a crystalline phase and controlling the oxidation state of Sn during growth to achieve dopant activation.

  18. Growth and structure of Co/Au magnetic thin films

    International Nuclear Information System (INIS)

    Marsot, N.

    1999-01-01

    We have studied the growth and the crystallographic structure of magnetic ultra thin cobalt/gold films (Co/Au), in order to investigate the correlations between their magnetic and structural properties. Room temperature (R.T.) Co growth on Au (111) proceeds in three stages. Up to 2 Co monolayers (ML), a bilayer island growth mode is observed. Between 2 and 5 ML, coalescence of the islands occurs, covering the substrate surface and a Co/Au mixing is observed resulting from the de-construction of the Herringbone reconstruction. Finally, beyond 5 ML, the CoAu mixing is buried and the Co growth continues in a 3-D growth. Annealing studies at 600 K on this system show a smoothing effect of the Co film, and at the same time, segregation of Au atoms. The quality of the Co/Au interface (sharpness) is not enhanced by the annealing. The local order was studied by SEXAFS and the long range order by GIXRD showing that the Co film has a hexagonal close packed structure, with an easy magnetization axis perpendicular to the surface. From a local order point of view, the Co grows with an incoherent epitaxy and keeps its own bulk parameters. The GIXRD analysis shows a residual strain in the Co film of 4%. The difference observed between the local order analysis and the long range order results is explained in terms of the low dimensions of the diffracting domains. The evolution of film strains, as a function of the Co coverage, shows a marked deviation from the elastic strain theory. Modification of the strain field in the Co film as a function of the Au coverage is studied by GIXRD analysis. The Au growth study, at R.T., shows no evidence of a Au/Co mixing in the case of the Au/Co interface. The Au overlayer adopts a twinned face centred cubic structure on the rough Co film surface. (author)

  19. Comparison of Growth of Healthy Term Infants Fed Extensively Hydrolyzed Protein- and Amino Acid-Based Infant Formulas

    Directory of Open Access Journals (Sweden)

    Marlene W. Borschel

    2018-03-01

    Full Text Available The aim of this narrative review was to assess published growth data for healthy, term, infants consuming extensively hydrolyzed protein-based (EHF, or amino acid-based formulas (AAF. These data may be of use to clinicians managing infants with medical conditions consuming these products. A search was conducted using key terms: amino acid-based, hydrolysate, hydrolyzed, hydrolysed, infant formula, infant formulae or formulas, baby formula, or formulae or formulas, infant, infants, infantile, and growth. Seven controlled, randomized, prospective growth trials of healthy term infants fed EHFs or AAFs at similar time points during the first four months of age met these and other criteria, including that the trial was published in a peer-reviewed journal, subjects were enrolled by ≤14 days of age and were exclusively formula-fed at entry and throughout the duration of the trial, and infants were assessed at regular intervals with weight measures available ideally at 14 days, one, two, three, and four months of age. Results suggested that healthy infants receiving commonly available EHFs and AAFs do not appear to experience accelerated growth as reported for infants fed many standard formulas. Differences in growth patterns were observed with some formulas supporting normative growth patterns during the first four months but others appearing to support markedly lower growth patterns. These observations should be confirmed in well-designed prospective randomized trials. Until that time, it is recommended that EHFs and AAFs be chosen carefully with individual patient needs considered.

  20. Low temperature CVD growth of ultrathin carbon films

    Directory of Open Access Journals (Sweden)

    Chao Yang

    2016-05-01

    Full Text Available We demonstrate the low temperature, large area growth of ultrathin carbon films by chemical vapor deposition under atmospheric pressure on various substrates. In particularly, uniform and continuous carbon films with the thickness of 2-5 nm were successfully grown at a temperature as low as 500 oC on copper foils, as well as glass substrates coated with a 100 nm thick copper layer. The characterizations revealed that the low-temperature-grown carbon films consist on few short, curved graphene layers and thin amorphous carbon films. Particularly, the low-temperature grown samples exhibited over 90% transmittance at a wavelength range of 400-750 nm and comparable sheet resistance in contrast with the 1000oC-grown one. This low-temperature growth method may offer a facile way to directly prepare visible ultrathin carbon films on various substrate surfaces that are compatible with temperatures (500-600oC used in several device processing technologies.

  1. Growth of tin oxide thin films composed of nanoparticles on hydrophilic and hydrophobic glass substrates by spray pyrolysis technique

    Energy Technology Data Exchange (ETDEWEB)

    Paloly, Abdul Rasheed; Satheesh, M. [Nano Functional Materials Lab, Department of Physics, Cochin University of Science and Technology, Kochi 682022, Kerala (India); Martínez-Tomás, M. Carmen; Muñoz-Sanjosé, Vicente [Departamento de Física Aplicada y Electromagnetismo, Universitat de Valencia, c/Dr Moliner 50, Burjassot, Valencia 46100 (Spain); Rajappan Achary, Sreekumar [Nano Functional Materials Lab, Department of Physics, Cochin University of Science and Technology, Kochi 682022, Kerala (India); Bushiri, M. Junaid, E-mail: junaidbushiri@gmail.com [Nano Functional Materials Lab, Department of Physics, Cochin University of Science and Technology, Kochi 682022, Kerala (India)

    2015-12-01

    Highlights: • SnO{sub 2} thin films were grown on hydrophilic and hydrophobic glass substrates. • Samples on hydrophobic substrates are having comparatively larger lattice volume. • Films on hydrophobic substrates have larger particles and low density distribution. • Substrate dependent photoluminescence emission is observed and studied. • SnO{sub 2} thin films grown over hydrophobic substrates may find potential applications. - Abstract: In this paper, we have demonstrated the growth of tin oxide (SnO{sub 2}) thin films composed of nanoparticles on hydrophobic (siliconized) and hydrophilic (non-siliconized) glass substrates by using the spray pyrolysis technique. X-ray diffraction (XRD) analysis confirmed the formation of SnO{sub 2} thin films with tetragonal rutile-phase structure. Average particle size of nanoparticles was determined to be in the range of 3–4 nm measured from the front view images obtained by a field emission gun scanning electron microscope (FESEM), while the size of nanoparticle clusters, when present, were in the range of 11–20 nm. Surface morphology of SnO{sub 2} films grown over hydrophobic substrates revealed larger isolated particles which are less crowded compared to the highly crowded and agglomerated smaller particles in films on hydrophilic substrates. Blue shift in the band gap is observed in samples in which the average particle size is slightly larger than the exciton Bohr radius. Photoluminescence (PL) analysis of samples grown over hydrophobic substrates exhibited an intense defect level emission and a weak near band edge emission. The enhanced visible emission from these SnO{sub 2} thin films is attributed to lattice defects formed during the film growth due to the mismatch between the film and the hydrophobic substrate surface.

  2. Growth and characterization of ultrathin epitaxial MnO film on Ag(001)

    Science.gov (United States)

    Kundu, Asish K.; Menon, Krishnakumar S. R.

    2016-07-01

    We present here a comprehensive growth procedure to obtain a well-ordered MnO(001) ultrathin film on Ag(001) substrate. Depending upon the oxygen partial pressure during the growth, different phases of manganese oxide have been detected by Low Energy Electron Diffraction (LEED) and X-ray Photoelectron Spectroscopic (XPS) studies. A modified growth scheme has been adopted to get well-ordered and stoichiometric MnO(001) ultrathin film. The detailed growth mechanism of epitaxial MnO film on Ag(001) has been studied step by step, using LEED and XPS techniques. Observation of sharp (1 × 1) LEED pattern with a low inelastic background, corresponds to a long-range atomic order with low defect densities indicating the high structural quality of the film. The Mn 2p and Mn 3s core-level spectra confirm the oxidation state as well as the stoichiometry of the grown MnO films. Apart from the growth optimization, the evolution of strain relaxation of the MnO(001) film with film thickness has been explored.

  3. Strong band edge luminescence from InN films grown on Si substrates by electron cyclotron resonance-assisted molecular beam epitaxy

    International Nuclear Information System (INIS)

    Yodo, Tokuo; Yona, Hiroaki; Ando, Hironori; Nosei, Daiki; Harada, Yoshiyuki

    2002-01-01

    We observed strong band edge luminescence at 8.5-200 K from 200-880 nm thick InN films grown on 10 nm thick InN buffer layers on Si(001) and Si(111) substrates by electron cyclotron resonance-assisted molecular beam epitaxy. The InN film on the Si(001) substrate exhibited strong band edge photoluminescence (PL) emission at 1.814 eV at 8.5 K, tentatively assigned as donor to acceptor pair [DAP (α-InN)] emission from wurtzite-InN (α-InN) crystal grains, while those on Si(111) showed other stronger band edge PL emissions at 1.880, 2.081 and 2.156 eV, tentatively assigned as donor bound exciton [D 0 X(α-InN)] from α-InN grains, DAP (β-InN) and D 0 X (β-InN) emissions from zinc blende-InN (β-InN) grains, respectively

  4. Growth in VLBW infants fed predominantly fortified maternal and donor human milk diets: a retrospective cohort study

    Science.gov (United States)

    2012-01-01

    Background To determine the effect of human milk, maternal and donor, on in-hospital growth of very low birthweight (VLBW) infants. We performed a retrospective cohort study comparing in-hospital growth in VLBW infants by proportion of human milk diet, including subgroup analysis by maternal or donor milk type. Primary outcome was change in weight z-score from birth to hospital discharge. Methods Retrospective cohort study. Results 171 infants with median gestational age 27 weeks (IQR 25.4, 28.9) and median birthweight 899 g (IQR 724, 1064) were included. 97% of infants received human milk, 51% received > 75% of all enteral intake as human milk. 16% of infants were small-for-gestational age (SGA, 75% human milk had a greater negative change in weight z-score from birth to discharge compared to infants receiving human milk fortifier was related to human milk intake (p = 0.04). Among infants receiving > 75% human milk, there was no significant difference in change in weight z-score by milk type (donor −0.84, maternal −0.56, mixed −0.45, p = 0.54). Infants receiving >75% donor milk had higher rates of SGA status at discharge than those fed maternal or mixed milk (56% vs. 35% (maternal), 21% (mixed), p = 0.08). Conclusions VLBW infants can grow appropriately when fed predominantly fortified human milk. However, VLBW infants fed >75% human milk are at greater risk of poor growth than those fed less human milk. This risk may be highest in those fed predominantly donor human milk. PMID:22900590

  5. In situ characterization of thin film growth: Boron nitride on silicon

    International Nuclear Information System (INIS)

    Fukarek, W.

    2001-01-01

    Real-time ellipsometry (RTE) in combination with particle flux measurement is applied to ion beam assisted deposition of boron nitride (BN) films. RTE is used as a tool for process diagnostic to improve the deposition stability. A novel technique for the determination of absolute density depth profiles from dynamic growth rate data and film forming particle flux is employed. From real-time cantilever curvature measurement and simultaneously recorded film thickness data instantaneous stress depth profiles are derived with a depth resolution in the nm range. The synergistic effects on the information obtained from RTE, particle flux, and cantilever bending data are demonstrated. The density of turbostratic BN (tBN) is found to increase slightly with film thickness while the compressive stress decreases, indicating an increasing quality and/or size of crystallites in the course of film growth. Refractive index and density depth profiles in cubic BN (cBN) films correspond perfectly to structural information obtained from dark field transmission electron microscope graphs. The established tBN/cBN two-layer model is found to be a crude approximation that has to be replaced by a three-layer model including nucleation, grain growth, and coalescence of cBN. The instantaneous compressive stress in a homogeneous tBN film is found to decrease, while the density increases during growth. The instantaneous compressive stress depth profiles in cBN films are more complex and not easy to understand but reliable information on the structural evolution during growth can be extracted

  6. Intestinal mucosa development in broiler chickens fed natural growth promoters

    Directory of Open Access Journals (Sweden)

    ERL Pelicano

    2005-12-01

    Full Text Available This study evaluated the use of probiotics and prebiotics on the histological and morphological indexes of the intestinal mucosa of broilers at 21 days of age. Thirty-six birds were randomly distributed in a 3 x 3 factorial arrangement, considering 3 probiotics and prebiotics sources in the diet. There were 9 treatments with 4 repetitions. Diet treatments were: 1 - Control (without growth promoters; 2 - Bacillus subtilis-based probiotic (Pro 1; 3 - Probiotic (Pool based on Lactobacillus acidophilus and casei, Streptococcus lactis and faecium, Bifidobacterium bifidum and Aspergillus oryzae (Pro 2; 4 - Prebiotic based on Phosphorylated Mannanoligosaccharide (MOS and Organic Acidifier (OA (Pre 1; 5 - MOS-based prebiotic (Pre 2; 6 - Pro 1 + Pre 1; 7 - Pro 1 + Pre 2; 8 - Pro 2 + Pre 1; 9 - Pro 2 + Pre 2. Higher villus height (VH (p<0.01 were seen in the duodenum of birds fed diets without prebiotics, whereas birds fed Bacillus subtilis-based probiotic and birds fed prebiotic based on MOS and OA showed higher VH (p<0.01 in jejunum and ileum. Greater crypt depths (CD (p<0.01 were observed in the duodenum, jejunum and ileum of birds receiving B. subtilis, and in the duodenum and jejunum of birds fed diets without prebiotics. Significant interaction (p<0.01 between the evaluated factors was seen for both, VH and CD, in the three intestinal portions. Greater VH was obtained in duodenum, jejunum and ileum with the use of probiotics and prebiotics and greater CD with the use of probiotics, in relation to the control group. There was no difference in villus density (VD between birds fed diets without additives or diets containing probiotics and prebiotics. Nevertheless, there was a significant interaction (p<0.05 between the evaluated factors for VD in the duodenum. Concluding, beneficial effects were seen in histological indexes of the intestinal mucosa with the use of probiotics and prebiotics at 21 days of age.

  7. Giant secondary grain growth in Cu films on sapphire

    Directory of Open Access Journals (Sweden)

    David L. Miller

    2013-08-01

    Full Text Available Single crystal metal films on insulating substrates are attractive for microelectronics and other applications, but they are difficult to achieve on macroscopic length scales. The conventional approach to obtaining such films is epitaxial growth at high temperature using slow deposition in ultrahigh vacuum conditions. Here we describe a different approach that is both simpler to implement and produces superior results: sputter deposition at modest temperatures followed by annealing to induce secondary grain growth. We show that polycrystalline as-deposited Cu on α-Al2O3(0001 can be transformed into Cu(111 with centimeter-sized grains. Employing optical microscopy, x-ray diffraction, and electron backscatter diffraction to characterize the films before and after annealing, we find a particular as-deposited grain structure that promotes the growth of giant grains upon annealing. To demonstrate one potential application of such films, we grow graphene by chemical vapor deposition on wafers of annealed Cu and obtain epitaxial graphene grains of 0.2 mm diameter.

  8. ToF-SIMS study of growth behavior in all-nanoparticle multilayer films using a novel indicator layer

    International Nuclear Information System (INIS)

    Chen, B.-J.; Yin, Y.-S.; Ling, Y.-C.

    2008-01-01

    All-nanoparticle multilayer films found novel applications in the areas of photonics, catalysis, sensors, and biomaterials. The assembly of nanoparticles into conformal and uniform films with precise control over chemical and physical properties poses a significant challenge. Using time-of-flight secondary ion mass spectrometry (ToF-SIMS), we have investigated the growth behavior in all-nanoparticle multilayer films using a novel indicator layer. The all-nanoparticle multilayer films were prepared by dipping the polyester substrate with electrostatic charges alternatively into solutions containing three different types of nanoparticles (TiO 2 , Al 2 O 3 , and SiO 2 ). Upon the deposition of each layer, ToF-SIMS was employed to determine the surface chemical composition of intermediate products. The intermixing extent of TiO 2 indicator layer was used to reveal the stratification of each layer. Combining with zeta-potential measurements, the solvation and deposition of the under-layer species in the aqueous environment during fresh layer formation was proposed as a plausible cause for mutilayers not stratified into well-defined layers but displaying a nonlinear growth behavior.

  9. Effect of growth pressure on the synthesis of vertically aligned carbon nanotubes and their growth termination.

    Science.gov (United States)

    Park, Sangeun; Song, Wooseok; Kim, Yooseok; Song, Inkyung; Kim, Sung Hwan; Lee, Su Il; Jang, Sung Won; Parkl, Chong-Yun

    2014-07-01

    When vertically aligned carbon nanotubes (VACNTs) are synthesized by thermal chemical vapor deposition (TCVD), their structural features such as height and density can be determined by TCVD growth conditions. In this study we investigated the effect of growth pressure on the structural features of VACNTs. Changes in growth pressure significantly affected the height, density, and crystalinity of synthesized VACNTs. In addition, we suggest that the growth termination of VACNTs could be due to the lack of carbon feedstock supply to the center of the VACNT film induced by the pressure-dependent adsorption of amorphous carbon at the edge of the VACNT film. In addition, the field emission characteristics of the VACNT film were carried out. The turn-on voltage of the VACNT film was 1.62 V/microm and the field enhancement factor (beta) was 2478. These results provide useful information for practical applications of VACNTs, such as field emission display and X-ray source.

  10. On the mechanism of self-deceleration of the thin oxide film growth

    CERN Document Server

    Mukhambetov, D G

    2002-01-01

    The objective of this work was to investigate the kinetics of the two-phase oxide film growth on the alpha-Fe surface at temperatures of 650-750 K. We experimentally determined that the film thickness (h)-time oxidation (tau) relationship in the range denoted above is a logarithmic function, whereas Cabrera and Mott's theory gives a square law of film growth. In our work, analytical treatment of experimental data was made based on this theory, but we propose that self-deceleration of the film growth is caused not by attenuation of the electric intensity in the film because of an increase of h but by the shielding influence of the space charge of diffusing ions and electrons in that oxide film. With that purpose in view, the Debye shielding distance for plasma substance state in the oxide film was taken into consideration. The logarithmic law of oxide film growth was derived. Estimated calculations of this law's parameters were made that quantitatively correspond with literature data. The results obtained were...

  11. Process and apparatus for irradiating film, and irradiated film

    International Nuclear Information System (INIS)

    1981-01-01

    A process for irradiating film is described, which consists of passing the film through an electron irradiation zone having an electron reflection surface disposed behind and generally parallel to the film; and disposing within the irradiation zone adjacent the edges of the film a lateral reflection member for reflecting the electrons toward the reflection surface to further reflect the reflected electrons towards the adjacent edges of the film. (author)

  12. Epitaxial growth and properties of YBaCuO thin films

    International Nuclear Information System (INIS)

    Geerk, J.; Linker, G.; Meyer, O.

    1989-08-01

    The growth quality of YBaCuO thin films deposited by sputtering on different substrates (Al 2 O 3 , MgO, SrTiO 3 , Zr(Y)O 2 ) has been studied by X-ray diffraction and channeling experiments as a function of the deposition temperature. Besides the substrate orientation, the substrate temperature is the parameter determining whether films grow in c-, a-, (110) or mixed directions. Epitaxial growth correlates with high critical current values in the films of up to 5.5x10 6 A/cm 2 at 77 K. Ultrathin films with thicknesses down to 2 nm were grown revealing three-dimensional superconducting behaviour. Films on (100) SrTiO 3 of 9 nm thickness and below are partially strained indicating commensurate growth. From the analysis of the surface disorder 1 displaced Ba atom per Ba 2 Y row was obtained indicating that the disordered layer thickness is about 0.6 nm. Tunnel junctions fabricated on these films reveal gap-like structures near ±16 mV and ±30 mV. (orig.) [de

  13. Modeling of metal thin film growth: Linking angstrom-scale molecular dynamics results to micron-scale film topographies

    Science.gov (United States)

    Hansen, U.; Rodgers, S.; Jensen, K. F.

    2000-07-01

    A general method for modeling ionized physical vapor deposition is presented. As an example, the method is applied to growth of an aluminum film in the presence of an ionized argon flux. Molecular dynamics techniques are used to examine the surface adsorption, reflection, and sputter reactions taking place during ionized physical vapor deposition. We predict their relative probabilities and discuss their dependence on energy and incident angle. Subsequently, we combine the information obtained from molecular dynamics with a line of sight transport model in a two-dimensional feature, incorporating all effects of reemission and resputtering. This provides a complete growth rate model that allows inclusion of energy- and angular-dependent reaction rates. Finally, a level-set approach is used to describe the morphology of the growing film. We thus arrive at a computationally highly efficient and accurate scheme to model the growth of thin films. We demonstrate the capabilities of the model predicting the major differences on Al film topographies between conventional and ionized sputter deposition techniques studying thin film growth under ionized physical vapor deposition conditions with different Ar fluxes.

  14. Cadmium sulfide thin films growth by chemical bath deposition

    Science.gov (United States)

    Hariech, S.; Aida, M. S.; Bougdira, J.; Belmahi, M.; Medjahdi, G.; Genève, D.; Attaf, N.; Rinnert, H.

    2018-03-01

    Cadmium sulfide (CdS) thin films have been prepared by a simple technique such as chemical bath deposition (CBD). A set of samples CdS were deposited on glass substrates by varying the bath temperature from 55 to 75 °C at fixed deposition time (25 min) in order to investigate the effect of deposition temperature on CdS films physical properties. The determination of growth activation energy suggests that at low temperature CdS film growth is governed by the release of Cd2+ ions in the solution. The structural characterization indicated that the CdS films structure is cubic or hexagonal with preferential orientation along the direction (111) or (002), respectively. The optical characterization indicated that the films have a fairly high transparency, which varies between 55% and 80% in the visible range of the optical spectrum, the refractive index varies from 1.85 to 2.5 and the optical gap value of which can reach 2.2 eV. It can be suggested that these properties make these films perfectly suitable for their use as window film in thin films based solar cells.

  15. Three-dimensional growth simulation: A study of substrate oriented films

    International Nuclear Information System (INIS)

    Besnard, A; Martin, N; Carpentier, L

    2010-01-01

    Monte Carlo simulations are developed to simulate the growth of three-dimensional columnar microstructure in thin films. We are studying in particular oriented microstructure like those produced with the Glancing Angle Deposition technique (GLAD). Some geometrical characteristics of the particles flux, the organization of defect sites on the substrate surface and the atomic surface diffusion are mainly investigated in order to predict the growth processes and the resulting features of the films. This study reports on simulations of thin film growth exhibiting an oblique and zigzag columnar microstructure. Column angle evolution and density are investigated versus incidence angle α or period number n and compared with experimental measurements.

  16. FED-A, an advanced performance FED based on low safety factor and current drive

    International Nuclear Information System (INIS)

    Peng, Y.K.M.; Rutherford, P.H.

    1983-08-01

    The FED-A study aims to quantify the potential improvement in cost-effectiveness of the Fusion Engineering Device (FED) by assuming low safety factor q (less than 2 as opposed to about 3) at the plasma edge and noninductive current drive (as opposed to only inductive current drive). The FED-A performance objectives are set to be : (1) ignition assuming International Tokamak Reactor (INTOR) plamsa confinement scaling, but still achieving a fusion power amplification Q greater than or equal to 5 when the confinement is degraded by a factor of 2; (2) neutron wall loading of about 1 MW/m 2 , with 0.5 MW/m 2 as a conservative lower bound; and (3) more clearly power-reactor-like operations, such as steady state

  17. Atmosphere influence on in situ ion beam analysis of thin film growth

    International Nuclear Information System (INIS)

    Lin, Yuping; Krauss, A.R.; Gruen, D.M.; Chang, R.P.H.; Auciello, O.H.; Schultz, J.A.

    1994-01-01

    In situ, nondestructive surface characterization of thin-film growth processes in an environment of chemically active gas at pressures of several mTorr is required both for the understanding of growth processes in multicomponent films and layered heterostructures and for the improvement of process reproducibility and device reliability. The authors have developed a differentially pumped pulsed ion beam surface analysis system that includes ion scattering spectroscopy (ISS) and direct recoil spectroscopy (DRS), coupled to an automated ion beam sputter-deposition system (IBSD), to study film growth processes in an environment of chemically active gas, such as required for the growth of oxide, nitride, or diamond thin films. The influence of gas-phase scattering and gas-surface interactions on the ISS and DRS signal intensity and peak shape have been studied. From the intensity variation as a function of ambient gas pressure, the authors have calculated the mean free path and the scattering cross-section for a given combination of primary ion species and ambient gas. Depending on the system geometry and the combination of primary beam and background, it is shown that surface-specific data can be obtained during thin-film growth at pressures ranging from a few mtorr to approximately 1 Torr. Detailed information such as surface composition, structure, and film growth mechanism may be obtained in real-time, making ion beam analysis an ideal nondestructive, in situ probe of thin-film growth processes

  18. Epitaxial growth and magnetic properties of ultraviolet transparent Ga2O3/(Ga1-xFex)2O3 multilayer thin films.

    Science.gov (United States)

    Guo, Daoyou; An, Yuehua; Cui, Wei; Zhi, Yusong; Zhao, Xiaolong; Lei, Ming; Li, Linghong; Li, Peigang; Wu, Zhenping; Tang, Weihua

    2016-04-28

    Multilayer thin films based on the ferromagnetic and ultraviolet transparent semiconductors may be interesting because their magnetic/electronic/photonic properties can be manipulated by the high energy photons. Herein, the Ga2O3/(Ga1-xFex)2O3 multilayer epitaxial thin films were obtained by alternating depositing of wide band gap Ga2O3 layer and Fe ultrathin layer due to inter diffusion between two layers at high temperature using the laser molecular beam epitaxy technique. The multilayer films exhibits a preferred growth orientation of crystal plane, and the crystal lattice expands as Fe replaces Ga site. Fe ions with a mixed valence of Fe(2+) and Fe(3+) are stratified distributed in the film and exhibit obvious agglomerated areas. The multilayer films only show a sharp absorption edge at about 250 nm, indicating a high transparency for ultraviolet light. What's more, the Ga2O3/(Ga1-xFex)2O3 multilayer epitaxial thin films also exhibits room temperature ferromagnetism deriving from the Fe doping Ga2O3.

  19. Effects of film polarities on InN growth by molecular-beam epitaxy

    International Nuclear Information System (INIS)

    Xu, K.; Yoshikawa, A.

    2003-01-01

    Effects of the film polarity on InN growth were investigated in molecular-beam epitaxy (MBE). It was found that N-polarity InN could be grown at higher temperatures than In-polarity one. For the In-polarity films, which were grown on Ga-polar GaN template, the highest growth temperature was limited below 500 deg. C, and the surface morphology and crystal quality tended to be poor mainly because of the tolerated low growth temperature. While for the N-polarity InN films, which were grown on MBE-grown N-polar GaN, the growth temperature could be as high as 600 deg. C. The step-flow-like growth morphology was achieved for the InN films grown with N polarity at 580 deg. C. The resulting full widths of half maximum of x-ray rocking curve around InN (002) and (102) reflections were about 200-250 and 950-1100 arc sec, respectively. The photoluminescence of the InN films peaked at 0.697 eV. The recording Hall mobility of InN film grown in N polarity is 1400 cm 2 /V s with a background carrier concentration of 1.56x10 18 cm -3 at room temperature. For both-polarity films, we found N-rich condition was necessary for the stable InN growth

  20. An extended fractal growth regime in the diffusion limited aggregation including edge diffusion

    Directory of Open Access Journals (Sweden)

    Aritra Ghosh

    2016-01-01

    Full Text Available We have investigated on-lattice diffusion limited aggregation (DLA involving edge diffusion and compared the results with the standard DLA model. For both cases, we observe the existence of a crossover from the fractal to the compact regime as a function of sticking coefficient. However, our modified DLA model including edge diffusion shows an extended fractal growth regime like an earlier theoretical result using realistic growth models and physical parameters [Zhang et al., Phys. Rev. Lett. 73 (1994 1829]. While the results of Zhang et al. showed the existence of the extended fractal growth regime only on triangular but not on square lattices, we find its existence on the square lattice. There is experimental evidence of this growth regime on a square lattice. The standard DLA model cannot characterize fractal morphology as the fractal dimension (Hausdorff dimension, DH is insensitive to morphology. It also predicts DH = DP (the perimeter dimension. For the usual fractal structures, observed in growth experiments on surfaces, the perimeter dimension can differ significantly (DH ≠ DP depending on the morphology. Our modified DLA model shows minor sensitivity to this difference.

  1. Growth performance and haematology of the laboratory rat, rattus norvegicus fed on protein supplements and heavy metals

    International Nuclear Information System (INIS)

    Omotoso, O.T.; Sanya, B.T.

    2007-01-01

    Laboratory rat Rattus norvegicus. fed on poultry growers mash plus additional protein supplements and some heavy metals, was studied for the growth and the haematological parameters. All the dietary supplements resulted in an increase in the growth of the rats. The rats, fed on growers mash and prawn meal showed the best growth within 7 weeks. Effects of diets were significantly, correlated at 0.01 level. Weight loss was recorded in case of all heavy Metal-laced diets, however, calcium sulphate-laced diets resulted in an increase in growth. Mercurous chloride was the most toxic salt which resulted in the greatest weight loss. Haematological analysis of rats revealed that RBC/sub s/ were higher in the case of heavy metal-laced diets than heavy metal-free diets. Generally, RBC counts were higher in females than in males within a group. Fish meal and prawn meal feeding. (author)

  2. Preterm infants fed nutrient-enriched formula until 6 months show improved growth and development.

    Science.gov (United States)

    Jeon, Ga Won; Jung, Yu Jin; Koh, Sun Young; Lee, Yeon Kyung; Kim, Kyung Ah; Shin, Son Moon; Kim, Sung Shin; Shim, Jae Won; Chang, Yun Sil; Park, Won Soon

    2011-10-01

    The purpose of the present study was to determine the effect of feeding nutrient-enriched preterm formula to preterm infants until 6 months' corrected age (CA) on growth and development in the first 18 months of life. Very low-birthweight preterm infants were fed preterm formula until term (40 weeks CA). Infants were then assigned to one of three groups and were fed term formula until 6 months' CA (group 1, n= 29); preterm formula to 3 months' CA and then term formula to 6 months' CA (group 2, n= 30); or preterm formula until 6 months' CA (group 3, n= 31). Anthropometry was performed at term, 3, 6, 9, 12, 15, and at s18 months' CA. Mental and psychomotor development were assessed using the Bayley Scales of Infant Development II at 18 months' CA. Although body weight, length, head circumference and z score for CA at term in group 3 were significantly lower than those of groups 1 and 2, growth rates of these parameters were significantly higher in group 3 up to 18 months CA', as compared to groups 1 and 2. The mental developmental index and psychomotor developmental index of the Bayley test were not significantly different between the three groups. Very low-birthweight preterm infants fed nutrient-enriched preterm formula until 6 months' CA demonstrated significantly improved growth rates for bodyweight, length and head circumference, and comparable mental and psychomotor development throughout the first 18 months of life. © 2011 The Authors. Pediatrics International © 2011 Japan Pediatric Society.

  3. Growth performance, carcass characteristics and bioavailability of isoflavones in pigs fed soy bean based diets.

    Science.gov (United States)

    Kuhn, Gerda; Hennig, U; Kalbe, Claudia; Rehfeldt, Charlotte; Ren, M Q; Moors, S; Degen, Gisela H

    2004-08-01

    A growth trial with 38 weaners (castrated male pigs) was designed to compare the growth performance and carcass quality of pigs fed diets containing either soy bean meal or soy protein concentrate in a pair-feeding design. Soy bean meal (SBM) and soy protein concentrate (SPC) differed in isoflavone (daidzein plus genistein) content (782 microg/g in SBM and 125 microg/g in SPC, respectively). During the experiment, all pigs were fed four-phases-diets characterized by decreasing protein concentrations with increasing age (weaner I, weaner II, grower, finisher diets). Rations of control and experimental groups were isoenergetic, isonitrogenous, and isoaminogen. The weanling pigs with an initial live weight of 8.4 +/- 1.1 kg were allotted to flat deck boxes. During the growing/finishing period (days 70-170 of age), the pigs were housed in single boxes. Both, the weaning and the grower/finishing performances (daily body weight gain, feed intake, feed conversion ratio) were similar in both groups. No differences were found between the groups in carcass composition (percentages of cuts, tissues, and protein/fat), and meat quality of pigs. Moreover, the IGF-1R mRNA expression in longissimus muscle was not influenced by the kind of soy product. However, circulating levels of isoflavones were clearly different between pigs fed SBM (genistein 239 +/- 44; daidzein 162 +/- 42; equol 12 +/- 4 ng/ml plasma) and animals fed SPC (genistein 22 +/- 9 and daidzein 8 +/- 3, and equol 10 +/- 3 ng/ml plasma). The results confirm the expected differences in the bioavailability of soy isoflavones, yet, there were no significant differences in performance of pigs fed either soy bean meal or soy protein concentrate.

  4. Growth of n-alkane films on a single-crystal substrate

    DEFF Research Database (Denmark)

    Wu, Z. U.; Ehrlich, S. N.; Matthies, B.

    2001-01-01

    The structure and growth mode of alkane films (n-C/sub n/H/sub 2n+2/; n=4, 6, 7) adsorbed on a Ag(111) surface have been investigated by synchrotron X-ray scattering. New models are proposed for the butane (n=4) and hexane (n=6) monolayer and butane bilayer structures. Specular reflectivity scans...... reveal that growth of all films is preempted between two and three layers by nucleation of bulk particles oriented with a single bulk crystal plane parallel to the film. In the case of butane, the bulk particles also have a fixed azimuthal relationship with the film resulting in complete epitaxy....

  5. Role of high microwave power on growth and microstructure of thick nanocrystalline diamond films: A comparison with large grain polycrystalline diamond films

    Science.gov (United States)

    Tang, C. J.; Fernandes, A. J. S.; Girão, A. V.; Pereira, S.; Shi, Fa-Nian; Soares, M. R.; Costa, F.; Neves, A. J.; Pinto, J. L.

    2014-03-01

    In this work, we study the growth habit of nanocrystalline diamond (NCD) films by exploring the very high power regime, up to 4 kW, in a 5 kW microwave plasma chemical vapour deposition (MPCVD) reactor, through addition of a small amount of nitrogen and oxygen (0.24%) into 4% CH4 in H2 plasma. The coupled effect of high microwave power and substrate temperature on NCD growth behaviour is systematically investigated by varying only power, while fixing the remaining operating parameters. When the power increases from 2 kW to 4 kW, resulting also in rise of the Si substrate temperature higher than 150 °C, the diamond films obtained maintain the NCD habit, while the growth rate increases significantly. The highest growth rate of 4.6 μm/h is achieved for the film grown at 4 kW, which represents a growth rate enhancement of about 15 times compared with that obtained when using 2 kW power. Possible factors responsible for such remarkable growth rate enhancement of the NCD films are discussed. The evolution of NCD growth characteristics such as morphology, microstructure and texture is studied by growing thick films and comparing it with that of large grain polycrystalline (PCD) films. One important characteristic of the NCD films obtained, in contrast to PCD films, is that irrespective of deposition time (i.e. film thickness), their grain size and surface roughness remain in the nanometer range throughout the growth. Finally, based on our present and previous experimental results, a potential parameter window is established for fast growth of NCD films under high power conditions.

  6. Comprehensive study of growth mechanism and properties of low Zn content Cd{sub 1-x}Zn{sub x}S thin films by chemical bath

    Energy Technology Data Exchange (ETDEWEB)

    Rodriguez, Carlos Anibal [Multidisciplinary Research Institute in Science and Technology, Ineergias, University of La Serena (Chile); Sandoval-Paz, Myrna Guadalupe; Saavedra, Renato; De la Carrera, Francisco [Department of Physics, Faculty of Physical and Mathematical Sciences, University of Concepcion (Chile); Trejo-Cruz, Cuauhthemoc [Department of Physics, Faculty of Sciences, University of Biobio, Concepcion (Chile); Aragon, Luis E.; Sirena, Martin [Centro Atomico Bariloche & Instituto Balseiro, CNEA & Univ. Nac. de Cuyo, Bariloche, Rio Negro (Argentina); Delplancke, Marie-Paule [4MAT, Universite Libre de Bruxelles, Brussels (Belgium); Carrasco, Claudia [Department of Materials Engineering, Faculty of Engineering, University of Concepcion (Chile)

    2016-11-15

    Cd{sub 1-x}Zn{sub x}S thin films have been studied extensively as window layers for solar cell applications. However, a mismatch between the Cd{sub 1-x}Zn{sub x}S and copper-indium-gallium-selenide absorber layers increases with Zn film concentration, which reduces the device efficiency. In this work, Cd{sub 1-x}Zn{sub x}S thin films with low Zn concentrations were analyzed. The effect of the addition of different molar Zn concentrations to the reaction mixture on the growth mechanism of Cd{sub 1-x}Zn{sub x}S thin films and the influence of these mechanisms on structural, optical and morphological properties of the films has been studied. Cd{sub 1-x}Zn{sub x}S thin films were synthesized by chemical bath deposition using an ammonia-free alkaline solution. Microstructural analysis by X-ray diffraction showed that all deposited films grew with hexagonal structure and crystallite sizes decreased as the Zn concentration in the film increased. Optical measurements indicated a high optical transmission between 75% and 90% for wavelengths above the absorption edge. Band gap value increased from 2.48 eV to 2.62 eV, and the refractive index values for Cd{sub 1-x}Zn{sub x}S thin films decreased as the Zn increased. These changes in films and properties are related to a modification in growth mechanism of the Cd{sub 1-x}Zn{sub x}S thin films, with the influence of Zn(OH){sub 2} formation being more important as Zn in solution increases. (author)

  7. Thermal system design and modeling of meniscus controlled silicon growth process for solar applications

    Science.gov (United States)

    Wang, Chenlei

    The direct conversion of solar radiation to electricity by photovoltaics has a number of significant advantages as an electricity generator. That is, solar photovoltaic conversion systems tap an inexhaustible resource which is free of charge and available anywhere in the world. Roofing tile photovoltaic generation, for example, saves excess thermal heat and preserves the local heat balance. This means that a considerable reduction of thermal pollution in densely populated city areas can be attained. A semiconductor can only convert photons with the energy of the band gap with good efficiency. It is known that silicon is not at the maximum efficiency but relatively close to it. There are several main parts for the photovoltaic materials, which include, single- and poly-crystalline silicon, ribbon silicon, crystalline thin-film silicon, amorphous silicon, copper indium diselenide and related compounds, cadmium telluride, et al. In this dissertation, we focus on melt growth of the single- and poly-crystalline silicon manufactured by Czochralski (Cz) crystal growth process, and ribbon silicon produced by the edge-defined film-fed growth (EFG) process. These two methods are the most commonly used techniques for growing photovoltaic semiconductors. For each crystal growth process, we introduce the growth mechanism, growth system design, general application, and progress in the numerical simulation. Simulation results are shown for both Czochralski and EFG systems including temperature distribution of the growth system, velocity field inside the silicon melt and electromagnetic field for the EFG growth system. Magnetic field is applied on Cz system to reduce the melt convection inside crucible and this has been simulated in our numerical model. Parametric studies are performed through numerical and analytical models to investigate the relationship between heater power levels and solidification interface movement and shape. An inverse problem control scheme is developed to

  8. Appraisal on Textured Grain Growth and Photoconductivity of ZnO Thin Film SILAR

    Directory of Open Access Journals (Sweden)

    Deepu Thomas

    2014-01-01

    Full Text Available ZnO thin films were prepared by successive ionic layer adsorption reaction (SILAR method. The textured grain growth along c-axis in pure ZnO thin films and doped with Sn was studied. The structural analysis of the thin films was done by X-ray diffraction and surface morphology by scanning electron microscopy. Textured grain growth of the samples was measured by comparing the peak intensities. Textured grain growth and photo current in ZnO thin films were found to be enhanced by doping with Sn. ZnO thin film having good crystallinity with preferential (002 orientation is a semiconductor with photonic properties of potential benefit to biophotonics. From energy dispersive X-ray analysis, it is inferred that oxygen vacancy creation is responsible for the enhanced textured grain growth in ZnO thin films.

  9. Uniformly irradiated polymer film

    International Nuclear Information System (INIS)

    Fowler, S.L.

    1979-01-01

    Irradiated film having substantial uniformity in the radiation dosage profile is produced by irradiating the film within a trough having lateral deflection blocks disposed adjacent the film edges for deflecting electrons toward the surface of the trough bottom for further deflecting the electrons toward the film edge

  10. Monolayer-Mediated Growth of Organic Semiconductor Films with Improved Device Performance.

    Science.gov (United States)

    Huang, Lizhen; Hu, Xiaorong; Chi, Lifeng

    2015-09-15

    Increased interest in wearable and smart electronics is driving numerous research works on organic electronics. The control of film growth and patterning is of great importance when targeting high-performance organic semiconductor devices. In this Feature Article, we summarize our recent work focusing on the growth, crystallization, and device operation of organic semiconductors intermediated by ultrathin organic films (in most cases, only a monolayer). The site-selective growth, modified crystallization and morphology, and improved device performance of organic semiconductor films are demonstrated with the help of the inducing layers, including patterned and uniform Langmuir-Blodgett monolayers, crystalline ultrathin organic films, and self-assembled polymer brush films. The introduction of the inducing layers could dramatically change the diffusion of the organic semiconductors on the surface and the interactions between the active layer with the inducing layer, leading to improved aggregation/crystallization behavior and device performance.

  11. Epitaxial growth and magnetic properties of ultraviolet transparent Ga2O3/(Ga1−xFex)2O3 multilayer thin films

    Science.gov (United States)

    Guo, Daoyou; An, Yuehua; Cui, Wei; Zhi, Yusong; Zhao, Xiaolong; Lei, Ming; Li, Linghong; Li, Peigang; Wu, Zhenping; Tang, Weihua

    2016-01-01

    Multilayer thin films based on the ferromagnetic and ultraviolet transparent semiconductors may be interesting because their magnetic/electronic/photonic properties can be manipulated by the high energy photons. Herein, the Ga2O3/(Ga1−xFex)2O3 multilayer epitaxial thin films were obtained by alternating depositing of wide band gap Ga2O3 layer and Fe ultrathin layer due to inter diffusion between two layers at high temperature using the laser molecular beam epitaxy technique. The multilayer films exhibits a preferred growth orientation of crystal plane, and the crystal lattice expands as Fe replaces Ga site. Fe ions with a mixed valence of Fe2+ and Fe3+ are stratified distributed in the film and exhibit obvious agglomerated areas. The multilayer films only show a sharp absorption edge at about 250 nm, indicating a high transparency for ultraviolet light. What’s more, the Ga2O3/(Ga1−xFex)2O3 multilayer epitaxial thin films also exhibits room temperature ferromagnetism deriving from the Fe doping Ga2O3. PMID:27121446

  12. Growth-temperature-dependent optical and acetone detection properties of ZnO thin films

    International Nuclear Information System (INIS)

    Shewale, P. S.; Yu, Y. S.

    2015-01-01

    Zinc oxide (ZnO) thin films were prepared onto glass substrates at moderately low growth temperature by two-stage spray pyrolysis technique. The effects of growth temperature on structural, optical and acetone detection properties were investigated with X-ray diffractometry, a UV–visible spectrophotometer, photoluminescence (PL) spectroscopy and a homemade gas sensor testing unit, respectively. All the films are polycrystalline with a hexagonal wurtzite phase and exhibit a preferential orientation along [002] direction. The film crystallinity is gradually enhanced with an increase in growth temperature. The optical measurements show that all the films are physically highly transparent with a transmittance greater than 82% in the visible range. The band gap of the film is observed to exhibit a slight red shift with an increasing growth temperature. The PL studies on the films show UV/violet PL band at ∼ 395 nm. Among all the films investigated, the film deposited at 250 °C demonstrates a maximum sensitivity of 13% towards 20 ppm of acetone vapors at 300 °C operating temperature. (paper)

  13. Investigation of Au/Au(100) film growth with energetic deposition by kinetic Monte Carlo simulation

    International Nuclear Information System (INIS)

    Zhang Qingyu; Ma Tengcai; Pan Zhengying; Tang Jiayong

    2000-01-01

    The Au/Au(100) epitaxial growth with energetic deposition was simulated by using kinetic Monte Carlo method. The influences of energetic atoms on morphology and atomistic processes in the early stage of film growth were investigated. The reentrant layer-by-layer growth was observed in the temperature range of 450 K to 100 K. The authors found the energetic atoms can promote the nucleation and island growth in the early stages of film growth and enhance the smoothness of film surface at temperatures of film growth in 3-dimensional mode and in quasi-two-dimensional mode. The atomistic mechanism that promotes the nucleation and island growth and enhances the smoothness of film surface is discussed

  14. A novel process-based model of microbial growth: self-inhibition in Saccharomyces cerevisiae aerobic fed-batch cultures.

    Science.gov (United States)

    Mazzoleni, Stefano; Landi, Carmine; Cartenì, Fabrizio; de Alteriis, Elisabetta; Giannino, Francesco; Paciello, Lucia; Parascandola, Palma

    2015-07-30

    Microbial population dynamics in bioreactors depend on both nutrients availability and changes in the growth environment. Research is still ongoing on the optimization of bioreactor yields focusing on the increase of the maximum achievable cell density. A new process-based model is proposed to describe the aerobic growth of Saccharomyces cerevisiae cultured on glucose as carbon and energy source. The model considers the main metabolic routes of glucose assimilation (fermentation to ethanol and respiration) and the occurrence of inhibition due to the accumulation of both ethanol and other self-produced toxic compounds in the medium. Model simulations reproduced data from classic and new experiments of yeast growth in batch and fed-batch cultures. Model and experimental results showed that the growth decline observed in prolonged fed-batch cultures had to be ascribed to self-produced inhibitory compounds other than ethanol. The presented results clarify the dynamics of microbial growth under different feeding conditions and highlight the relevance of the negative feedback by self-produced inhibitory compounds on the maximum cell densities achieved in a bioreactor.

  15. Co-depositing Sn controls the growth of Al films as surfactant

    International Nuclear Information System (INIS)

    Barna, P. B.; Kovacs, A.; Misjak, F.; Eisenmenger-Sittner, C.; Bangert, H.; Tomastik, C.

    2002-01-01

    The present study investigates the influence of co-deposited Sn on the atomic processes involved in the structure evolution of vapour-deposited Al films. The films were prepared in HV by thermal evaporation from W sources at 1600 C substrate temperature either on Si wafers covered by a thermally grown oxide or on air cleaved mica. By applying the half-shadow technique, pure and Sn-doped Al films could be deposited simultaneously. The samples were investigated by AFM, scanning AES, X-TEM as well as by X-ray diffraction methods. The grain growth of Al is promoted by Sn in all stages of the film formation. Scanning AES measurements prove the existence of a wetting Sn layer both on the surface of Al islands and on the surface of the continuos Al layer. Excess Sn forms islands on the growth surface. The surface of pure Al layers exhibits grain boundary grooves and bunches of growth steps around terraces, while that of the Sn doped layers is more rounded. The substrate-film interface was covered by a thin Sn layer. AES measurements also prove the presence of Sn on the growth surface of Al films even after termination of Sn addition. Results of these experiments indicate that during co-deposition of Al and Sn the impinging Al atoms penetrate the wetting layer and are incorporated into the already existing Al crystals. A model has been developed for describing the growth of Al crystals in the presence Sn. (Authors)

  16. Evaluation of growth performance of broiler chicks fed with raw and processed leucaena eucociphala seed

    International Nuclear Information System (INIS)

    Minari, J.B.; Odutuga, A.A.

    2014-01-01

    Fourty-eight broiler chicks (day-old) were used in a 4 weeks feeding experiment to assess the growth response and the performance of broiler chicks fed raw Leucaena leucociphala seed meal (RLSM), roasted L. leucociphala seed meal (RoLSM) and steamed L. leucociphala seed meal (SLSM). The L. leucociphala seed, which serve as a source of protein were subjected to two treatments (roasting and steaming). Soybean based diet served as the control. There were four (4) experimental groups, each made up of four birds in three replicates allocated to the experimental diets. The results showed that the average final live weight, average weekly weight gain and average feed intake of birds fed with RoLSM performed better than birds fed with RLSM and SLSM. It was observed that the percentage organ to body weight of birds fed with the processed LSM were significantly (P < 0.05), higher as compared to the RLSM. A significant (P < 0.05) increase in the activity of aspartate transferase in the organs (heart, kidney and liver) of broilers fed with RoLSM was observed as compared to those fed with RLSM. The results showed a significant (P < 0.05), reduction in the activity of alanine transferase of organs of broilers chicks fed with processed L. leucociphala compared to the control. It is therefore, concluded that the processing techniques applied were able to improve the nutritional quality of L. leucociphala seed meal but relatively lower to the soybean based meal. (author)

  17. Competing edge networks

    Science.gov (United States)

    Parsons, Mark; Grindrod, Peter

    2012-06-01

    We introduce a model for a pair of nonlinear evolving networks, defined over a common set of vertices, subject to edgewise competition. Each network may grow new edges spontaneously or through triad closure. Both networks inhibit the other's growth and encourage the other's demise. These nonlinear stochastic competition equations yield to a mean field analysis resulting in a nonlinear deterministic system. There may be multiple equilibria; and bifurcations of different types are shown to occur within a reduced parameter space. This situation models competitive communication networks such as BlackBerry Messenger displacing SMS; or instant messaging displacing emails.

  18. Forests on the edge: Microenvironmental drivers of carbon cycle response to edge effects

    Science.gov (United States)

    Reinmann, A.; Hutyra, L.; Smith, I. A.; Thompson, J.

    2017-12-01

    Twenty percent of the world's forest is within 100 m of a forest edge, but much of our understanding of forest carbon (C) cycling comes from large, intact ecosystems, which creates an important mismatch between the landscapes we study and those we aim to characterize. The temperate broadleaf forest is the most heavily fragmented forest biome in the world and its growth and carbon storage responses to forest edge effects appear to be the opposite of those in the tropical and boreal regions. We used field measurements to quantify the drivers of temperate forest C cycling response to edge effects, characterizing vegetative growth, respiration, and forest structure. We find large gradients in air and soil temperature from the forest interior to edge (up to 4 and 10° C, respectively) and the magnitude of this gradient is inversely correlated to the size of the forest edge growth enhancement. Further, leaf area index increases with proximity to the forest edge. While we also find increases in soil respiration between the forest interior and edge, this flux is small relative to aboveground growth enhancement near the edge. These findings represent an important advancement in our understanding of forest C cycle response to edge effects and will greatly improve our capacity to constrain biogenic C fluxes in fragmented and heterogeneous landscapes.

  19. Cellular muscle growth and molecular cloning and expression of growth-related gene of Malaysian Mahseer Tor tambroides larvae fed with live and formulated feeds in indoor nursery rearing system

    Directory of Open Access Journals (Sweden)

    Md. Asaduzzaman

    2017-02-01

    Full Text Available The influences of live and formulated feeds on growth performances, muscle fibers morphometry and muscle growth-related gene expression of Malaysian mahseer, Tor tambroides larvae were evaluated in indoor nursery rearing system. Quadruplicate groups of T. tambroides larvae (0.07 ± 0.01 g, mean ± SE were stocked in sixteen aquaria (60 × 30 × 30 cm, randomly arranged in four dietary treatments viz. larvae fed artemia (LA, moina (LM, daphnia (LD and formulated feed (FF with stocking density of 34 larvae per aquarium. The larvae were fed to visually near satiation in two equal feedings per day, seven days per week for 75 days. The growth-related parameters (mean weight gain and specific growth rate were significantly highest in treatment FF, followed by treatment LA and the lowest in treatment LD or LM. Histological observation and muscle morphometric analysis revealed that mosaic hyperplasia was observed after 50 days of the feeding trial. Hypertrophic (diameter class 50 = 40 > d ≤ 50 μm and class 60 = d > 50 μm, but not hyperplastic (diameter class ≤10 μm, muscle fibers frequencies were significantly highest in larvae fed FF compared to those fed live feeds. The entire open reading frame cDNA sequences of two important growth-related genes, myogenin and MyoD, were successfully amplified and cloned from T. tambroides larvae. The nucleotide sequences alignment using CLUSTAL W in BioEdit program of both MyoD and myogenin genes showed the sign of existence of isoforms and highly conserved with other cyprinid fishes. Real-time PCR data demonstrated that myogenin and MyoD gene expressions were significantly upregulated in larvae fed FF. The results of the present experiment concluded that the nursery rearing of T. tambroides larvae with formulated feed showed augmented muscle growth and upregulated growth-related gene expression than feeding live feeds.

  20. Why in situ, real-time characterization of thin film growth processes?

    International Nuclear Information System (INIS)

    Auciello, O.; Krauss, A.R.

    1995-01-01

    Since thin-film growth occurs at the surface, the analytical methods should be highly surface-specific. although subsurface diffusion and chemical processes also affect film properties. Sampling depth and ambient-gas is compatibility are key factors which must be considered when choosing in situ probes of thin-film growth phenomena. In most cases, the sampling depth depends on the mean range of the exit species (ion, photon, or electron) in the sample. The techniques that are discussed in this issue of the MRS Bulletin (1) have been chosen because they may be used for in situ, real-time analysis of film-growth phenomena in vacuum and in the presence of ambient gases resulting either from the deposition process or as a requirement for the production of the desired chemical phase. A second criterion for inclusion is that the instrumentation be sufficiently compact and inexpensive to permit use as a dedicated tool in a thin-film deposition system

  1. Edge Delamination of Monolayer Transition Metal Dichalcogenides.

    Science.gov (United States)

    Ly, Thuc Hue; Yun, Seok Joon; Thi, Quoc Huy; Zhao, Jiong

    2017-07-25

    Delamination of thin films from the supportive substrates is a critical issue within the thin film industry. The emergent two-dimensional, atomic layered materials, including transition metal dichalcogenides, are highly flexible; thus buckles and wrinkles can be easily generated and play vital roles in the corresponding physical properties. Here we introduce one kind of patterned buckling behavior caused by the delamination from a substrate initiated at the edges of the chemical vapor deposition synthesized monolayer transition metal dichalcogenides, led by thermal expansion mismatch. The atomic force microscopy and optical characterizations clearly showed the puckered structures associated with the strain, whereas the transmission electron microscopy revealed the special sawtooth-shaped edges, which break the geometrical symmetry for the buckling behavior of hexagonal samples. The condition of the edge delamination is in accordance with the fracture behavior of thin film interfaces. This edge delamination and buckling process is universal for most ultrathin two-dimensional materials, which requires more attention in various future applications.

  2. Conjugate calculation of a film-cooled blade for improvement of the leading edge cooling configuration

    Directory of Open Access Journals (Sweden)

    Norbert Moritz

    2013-03-01

    Full Text Available Great efforts are still put into the design process of advanced film-cooling configurations. In particular, the vanes and blades of turbine front stages have to be cooled extensively for a safe operation. The conjugate calculation technique is used for the three-dimensional thermal load prediction of a film-cooled test blade of a modern gas turbine. Thus, it becomes possible to take into account the interaction of internal flows, external flow, and heat transfer without the prescription of heat transfer coefficients. The focus of the investigation is laid on the leading edge part of the blade. The numerical model consists of all internal flow passages and cooling hole rows at the leading edge. Furthermore, the radial gap flow is also part of the model. The comparison with thermal pyrometer measurements shows that with respect to regions with high thermal load a qualitatively and quantitatively good agreement of the conjugate results and the measurements can be found. In particular, the region in the vicinity of the mid-span section is exposed to a higher thermal load, which requires further improvement of the cooling arrangement. Altogether the achieved results demonstrate that the conjugate calculation technique is applicable for reasonable prediction of three-dimensional thermal load of complex cooling configurations for blades.

  3. New phenomena in epitaxial growth: solid films on quasicrystalline substrates

    International Nuclear Information System (INIS)

    Fournee, V; Thiel, P A

    2005-01-01

    An overview is given of the research conducted in the field of solid film growth on quasiperiodic surfaces. An atomistic description of quasicrystalline surfaces is presented and discussed in relation to bulk structural models. The various systems for which thin film growth has been attempted so far are reviewed. Emphasis is placed on the nucleation mechanisms of the solid films, on their growth modes in relation to the nature of the deposited metals, on the possibility of intermixing or alloying at the interface and on the epitaxial relationships at the crystal-quasicrystal interfaces. We also describe situations where the deposited elements adopt a quasiperiodic structure, which opens up the possibility of extending our understanding of the relation between quasiperiodicity and the physical properties of such structurally and chemically complex solids. (topical review)

  4. Assessing forest vulnerability to climate warming using a process-based model of tree growth: bad prospects for rear-edges.

    Science.gov (United States)

    Sánchez-Salguero, Raúl; Camarero, Jesus Julio; Gutiérrez, Emilia; González Rouco, Fidel; Gazol, Antonio; Sangüesa-Barreda, Gabriel; Andreu-Hayles, Laia; Linares, Juan Carlos; Seftigen, Kristina

    2017-07-01

    Growth models can be used to assess forest vulnerability to climate warming. If global warming amplifies water deficit in drought-prone areas, tree populations located at the driest and southernmost distribution limits (rear-edges) should be particularly threatened. Here, we address these statements by analyzing and projecting growth responses to climate of three major tree species (silver fir, Abies alba; Scots pine, Pinus sylvestris; and mountain pine, Pinus uncinata) in mountainous areas of NE Spain. This region is subjected to Mediterranean continental conditions, it encompasses wide climatic, topographic and environmental gradients, and, more importantly, it includes rear-edges of the continuous distributions of these tree species. We used tree-ring width data from a network of 110 forests in combination with the process-based Vaganov-Shashkin-Lite growth model and climate-growth analyses to forecast changes in tree growth during the 21st century. Climatic projections were based on four ensembles CO 2 emission scenarios. Warm and dry conditions during the growing season constrain silver fir and Scots pine growth, particularly at the species rear-edge. By contrast, growth of high-elevation mountain pine forests is enhanced by climate warming. The emission scenario (RCP 8.5) corresponding to the most pronounced warming (+1.4 to 4.8 °C) forecasted mean growth reductions of -10.7% and -16.4% in silver fir and Scots pine, respectively, after 2050. This indicates that rising temperatures could amplify drought stress and thus constrain the growth of silver fir and Scots pine rear-edge populations growing at xeric sites. Contrastingly, mountain pine growth is expected to increase by +12.5% due to a longer and warmer growing season. The projections of growth reduction in silver fir and Scots pine portend dieback and a contraction of their species distribution areas through potential local extinctions of the most vulnerable driest rear-edge stands. Our modeling

  5. pH-Amplified multilayer films based on hyaluronan: influence of HA molecular weight and concentration on film growth and stability.

    Science.gov (United States)

    Shen, Liyan; Chaudouet, Patrick; Ji, Jian; Picart, Catherine

    2011-04-11

    In this study, we investigate the growth and internal properties of polyelectrolyte multilayer films made of poly(l-lysine) and hyaluronan (PLL/HA) under pH-amplified conditions, that is, by alternate deposition of PLL at high pH and HA at low pH. We focus especially on the influence of the molecular weight of HA in this process as well as on its concentration in solution. Film growth was followed by quartz crystal microbalance and by infrared spectroscopy to quantify the deposited mass and to characterize the internal properties of the films, including the presence of hydrogen bonds and the ionization degree of HA in the films. Film growth was significantly faster for HA of high molecular weight (1300 kDa) as compared with 400 and 200 kDa. PLL was found to exhibit a random structure once deposited in the films. Furthermore, we found that PLL-ending films are more stable when they are placed in PBS than their HA counterparts. This was explained on the basis of more cohesive interactions in the films for PLL-ending films. Finally, we quantified PLL(FITC) diffusion into the films and observed that PLL diffusion is enhanced when PLL is paired with the HA of high MW. All together, these results suggest that besides purely physicochemical parameters such as variation in pH, the molecular weight of HA, its concentration in solution, and the possibility to form intermolecular HA association play important roles in film growth, internal cohesion, and stability.

  6. Growth of (100)-highly textured BaBiO{sub 3} thin films on silicon

    Energy Technology Data Exchange (ETDEWEB)

    Ferreyra, C. [GIyA and INN, CNEA, Av. Gral Paz 1499, 1650 San Martín, Buenos Aires (Argentina); Departamento de Física, Facultad Ciencias Exactas y Naturales, Universidad de Buenos Aires, Pabellón 1, Ciudad Universitaria, Buenos Aires (Argentina); Marchini, F. [Consejo Nacional de Investigaciones Científicas y Técnicas (CONICET) (Argentina); Departamento de Química Inorgánica, Analítica y Química-Física, INQUIMAE-CONICET, Facultad Ciencias Exactas y Naturales, Universidad de Buenos Aires, Pabellón 2, Ciudad Universitaria, Buenos Aires (Argentina); Granell, P. [INTI, CMNB, Av. Gral Paz 5445, B1650KNA San Martín, Buenos Aires (Argentina); Golmar, F. [Consejo Nacional de Investigaciones Científicas y Técnicas (CONICET) (Argentina); INTI, CMNB, Av. Gral Paz 5445, B1650KNA San Martín, Buenos Aires (Argentina); Escuela de Ciencia y Tecnología, UNSAM, Campus Miguelete, 1650 San Martín, Buenos Aires (Argentina); Albornoz, C. [GIyA and INN, CNEA, Av. Gral Paz 1499, 1650 San Martín, Buenos Aires (Argentina); and others

    2016-08-01

    We report on the growth and characterization of non-epitaxial but (100)-highly textured BaBiO{sub 3} thin films on silicon substrates. We have found the deposition conditions that optimize the texture, and show that the textured growth is favoured by the formation of a BaO layer at the first growth stages. X-ray diffraction Φ-scans, together with the observation that the same textured growth is found on films grown on Pt and SiO{sub 2} buffered Si, demonstrate the absence of epitaxy. Finally, we have shown that our (100)-oriented BaBiO{sub 3} films can be used as suitable buffers for the growth of textured heterostructures on silicon, which could facilitate the integration of potential devices with standard electronics. - Highlights: • BaBiO{sub 3} thin films were grown on Si substrates and characterized. • Films prepared using optimized conditions are highly textured in the (100) direction. • The absence of in-plane texture was demonstrated by X-ray diffraction. • Our films are suitable buffers for the growth of (100)-textured oxide heterostructures.

  7. Edge-wave-driven durable variations in the thickness of the surfactant film and concentration of surface floats

    Energy Technology Data Exchange (ETDEWEB)

    Averbukh, Elena [Nizhny Novgorod State Technical University n.a. R.E. Alekseev, Minin St. 24, 603950 Nizhny Novgorod (Russian Federation); Kurkina, Oksana, E-mail: okurkina@hse.ru [Nizhny Novgorod State Technical University n.a. R.E. Alekseev, Minin St. 24, 603950 Nizhny Novgorod (Russian Federation); National Research University Higher School of Economics, 25/12 Bol' shaya Pecherskaya St., 603155 Nizhny Novgorod (Russian Federation); Kurkin, Andrey [Nizhny Novgorod State Technical University n.a. R.E. Alekseev, Minin St. 24, 603950 Nizhny Novgorod (Russian Federation); Soomere, Tarmo, E-mail: soomere@cs.ioc.ee [Institute of Cybernetics at Tallinn University of Technology, Akadeemia tee 21, 12618 Tallinn (Estonia); Estonian Academy of Sciences, Kohtu 6, 10130 Tallinn (Estonia)

    2014-01-03

    By employing a simple model for small-scale linear edge waves propagating along a homogeneous sloping beach, we demonstrate that certain combinations of linear wave components may lead to durable changes in the thickness of the surfactant film, equivalently, in the concentration of various substances (debris, litter) floating on the water surface. Such changes are caused by high-amplitude transient elevations that resemble rogue waves and occur during dispersive focusing of wave fields with a continuous spectrum. This process can be treated as an intrinsic mechanism of production of patches in the surface layer of an otherwise homogeneous coastal environment impacted by linear edge waves.

  8. Direct growth of superconducting NdFeAs(O,F) thin films by MBE

    Energy Technology Data Exchange (ETDEWEB)

    Chihara, Masashi, E-mail: chihara@iku.xtal.nagoya-u.ac.jp [Department of Crystalline Materials Science, Nagoya University, Chikusa-ku, Nagoya 464-8603 (Japan); Sumiya, Naoki; Arai, Kenta [Department of Crystalline Materials Science, Nagoya University, Chikusa-ku, Nagoya 464-8603 (Japan); Ichinose, Ataru; Tsukada, Ichiro [Central Research Institute of Electric Power Industry, Yokosuka-shi, Kanagawa 240-0101 (Japan); Hatano, Takafumi; Iida, Kazumasa; Ikuta, Hiroshi [Department of Crystalline Materials Science, Nagoya University, Chikusa-ku, Nagoya 464-8603 (Japan)

    2015-11-15

    Highlights: • Highly textured NdFeAs(O,F) thin films were obtained by a direct growth method. • Enhancing the migration was crucial to realize the direct growth. • The critical current density exceeded 3 MA/cm{sup 2} at self-field and 1 MA/cm{sup 2} at 9 T. • A two-dimensional growth was confirmed by the observation of surface morphology. - Abstract: We report on the growth of NdFeAs(O,F) superconducting thin films by molecular beam epitaxy without having a NdOF secondary layer that was necessary for fluorine doping in our previous studies. The key to realizing the direct growth of a superconducting film was the enhancement of migration of the raw materials on the substrate, which was accomplished by two steps. Firstly, we increased the growth temperature that improved the crystalline quality of parent NdFeAsO thin films. Secondly, the atmosphere in the chamber during the growth was improved by changing the crucible material of the Fe source cell. Highly textured NdFeAs(O,F) thin films with critical temperatures up to 50 K were obtained, and terraces were observed by atomic force microscope, indicating a two-dimensional growth. However, precipitates were also found on the surface, which suggests that enhancing further the migration is necessary for obtaining a NdFeAs(O,F) thin film with a better quality.

  9. The study of thin film growth by using Monte Carlo method

    International Nuclear Information System (INIS)

    Tandogan, M.; Aktas, S.

    2010-01-01

    Thin film growth was studied by using Monte Carlo simulation method. Three basic models were used in this study. Model A, the gas particles used for the formation of film were under no external effects until they stick on the surface or to another particle which already stickled on the surface to form the film. Model B, gases were drifted towards the surface by an external agent. Model C, where the gas particles in the closed container were always distributed uniformly throughout the container while they are in gas state. The simulations revealed the fact that for an ideal thin film growth Model C gave the best result to prepare a thin film while a thicker but a better quality could be obtained by Model B.

  10. LDL oxidation, antioxidant capacity and growth of cultured grey mullet ( Mugil cephalus ) fed dietary sorghum distillery residue pretreated with polyethylene glycol.

    Science.gov (United States)

    Lee, Shin Mei; Cheng, Hui Ling; Pan, Bonnie Sun

    2009-09-09

    Dietary sorghum distillery residue (SDR) showed antioxidant and blood thinning effects on grey mullet during winter, but inhibited their growth. The objective of this study was to establish a preliminary treatment of the dietary SDR with polyethylene glycol (PEG), a tannin-binding agent, to enhance growth and blood antioxidant capacity of grey mullet ( Mugil cephalus ) feed. The feeding trial was carried out from June to November. The water temperature was between 25 and 30 degrees C; the specific growth rate of mullet was reduced significantly by feeding diet containing 20% SDR in comparison to fish fed the control diet or diet containing 20% SDR and PEG. In the period of October-November, the water temperature decreased to 19-25 degrees C; the specific growth rates of the 20% SDR-PEG group and the 20% SDR group were 0.13 and 0.19% day(-1), respectively, significantly higher than those fed the control diet (0.07% day(-1)). Feeding with 20% SDR or 20% SDR-PEG diets resulted in prolonged lag phase of low-density lipoprotein (LDL) oxidation compared to fish fed the control diet. The total antioxidant capacity of the plasma of the grey mullet fed 20% SDR-PEG was 1.24 mmol/L, significantly higher than those in the fish fed 20% SDR diet (0.84 mmol/L) or the control (0.72 mmol/L). In vivo observations found that preliminary treatment of SDR with PEG eliminated the endogenous undesirable growth inhibitory factors but maintained its protective effects against LDL oxidation in blood and improved the total antioxidant capacity and cold adaptation of grey mullet. The ethanol extract of SDR contained 31.9 +/- 7.8 mg/g gallic acids equivalent. The concentration needed to scavenge 50% of the DPPH radicals (IC(50)) was 0.86 mg/mL. Increased gallic acid equivalent and decreased IC(50) of DPPH scavenging activity of SDR fed to fish increased the total antioxidant capacity in blood plasma of grey mullet significantly.

  11. Pancreatic growth and cell turnover in the rat fed raw soya flour

    International Nuclear Information System (INIS)

    Oates, P.S.; Morgan, R.G.

    1982-01-01

    Growth and differentiation of the pancreatic acinar cell was studied in rats fed raw soya flour (RSF) for up to a year. A second group of rats were fed a control diet. After 1 week of RSF feeding there was a 200% increase in tissue RNA and weight, indicating initial hypertrophy, which was maintained for the 1-year study period. By the second week and over the remainder of the period studied there was also a marked increase in total DNA, suggesting hyperplasia. Cell turnover, as measured by the rate of incorporation of 3H-thymidine into pancreatic DNA, was significantly higher in RSF-fed animals only from the second to fourth weeks; it then returned to control values. Autoradiography showed an 18-fold increase in duct cell labeling at the end of the first week and an 11-fold increase by the end of the second week. Acinar cell labeling doubled from the second to the twelfth week. These studies confirm previous reports that RSF produces pancreatic hypertrophy and hyperplasia. They furthermore show that there is initially marked stimulation of DNA synthesis in the duct cell compartment. The results suggest that cells with the morphologic characteristics of duct cells may be the precursors of acinar cells in hyperplastic pancreatic tissue

  12. Epitaxial growth of silicon for layer transfer

    Science.gov (United States)

    Teplin, Charles; Branz, Howard M

    2015-03-24

    Methods of preparing a thin crystalline silicon film for transfer and devices utilizing a transferred crystalline silicon film are disclosed. The methods include preparing a silicon growth substrate which has an interface defining substance associated with an exterior surface. The methods further include depositing an epitaxial layer of silicon on the silicon growth substrate at the surface and separating the epitaxial layer from the substrate substantially along the plane or other surface defined by the interface defining substance. The epitaxial layer may be utilized as a thin film of crystalline silicon in any type of semiconductor device which requires a crystalline silicon layer. In use, the epitaxial transfer layer may be associated with a secondary substrate.

  13. POST-SOCIALIST POST-SUBURBIA: GROWTH MACHINE AND THE EMERGENCE OF “EDGE CITY” IN THE METROPOLITAN CONTEXT OF MOSCOW

    Directory of Open Access Journals (Sweden)

    Oleg Golubchikov

    2010-01-01

    Full Text Available To what extent do the ideas of “edge city”, “post-suburbia” and associated models of urban growth apply in the transition economy case? The paper considers urban development and place-making on the periphery of Moscow, based on the case of Khimki, a former off-limits “satellite city” and more recently a fast-growing area. The forces and ideologies driving the growth on the edge of Moscow and the relationship between different actors are considered. The paper argues that while the Russian case shares some commonalities with the Western models of “edge city” and “growth machine”, growth in Khimki is fuelled by opportunistic profit-making initiatives that are disconnected from “local” city. It is yet to be seen whether a growing demand for new infrastructure, as well as emerging residents’ movements will restructure the modes of governing urban growth more in line with proactive place-focused post-suburban politics.

  14. Isotopic evaluation of breast milk intake, energy metabolism, growth and body composition of exclusively breast fed infants in Pakistan

    International Nuclear Information System (INIS)

    Bhutta, Z.A.; Weaver, L.; Preston, T.

    2000-01-01

    There is considerable evidence to support the view that the current growth standards for infants, which are in-use globally, may be inappropriate. This is based on the observation that these were derived from largely formula-fed western populations and recent studies documenting that exclusively breastfed young infants exhibit a lower growth trajectory. However, there are few studies objectively evaluating energy metabolism, body composition and growth in exclusively breastfed infants, and none in developing countries. We propose to evaluate this longitudinally in an appropriate sample of exclusively breast fed newborn infants in Pakistan. These newborn infants will be well characterized at birth and sequential measurements of breast milk intake and energy expenditure will be made using doubly labeled water, big-impedance analysis and indirect calorimetry. (author)

  15. Growth of thin fullerene films by matrix assisted pulsed laser evaporation

    DEFF Research Database (Denmark)

    Canulescu, Stela; Schou, Jørgen; Fæster, Søren

    C60 fullerene thin films of average thickness of more than 100 nm on silicon substrates can be produced in vacuum by matrix-assisted pulsed laser evaporation (MAPLE). A 355 nm Nd:YAG laser was directed onto a frozen target of anisole with a concentration of 0.67 wt% C60. At laser fluences below 1.......5 J/cm2 the dominant fraction of the film molecules are C60 transferred to the substrate without any fragmentation. For high fluences high-resolution SEM images of MAPLE deposited films reveal large circular features on the surface with high amount of material concentrated at edges. These features......, observed over a wide range of laser fluences, are caused by ejection of large matrix-fullerene liquid droplets into the gas-phase and subsequent deposition. At similar laser energies, but using an unfocused laser beam, MAPLE favours evaporation of matrix and organic molecules, resulting in films...

  16. Template-Directed Self-Assembly of Alkanethiol Monolayers: Selective Growth on Preexisting Monolayer Edges

    NARCIS (Netherlands)

    Sharpe, R.B.A.; Burdinski, Dirk; Huskens, Jurriaan; Zandvliet, Henricus J.W.; Reinhoudt, David; Poelsema, Bene

    2007-01-01

    Self-assembled monolayers were investigated for their suitability as two-dimensional scaffolds for the selective growth of alkanethiol edge structures. Heterostructures with chemical contrast could be grown, whose dimensions were governed by both the initial pattern sizes and the process time.

  17. EMA: a developmentally regulated cell-surface glycoprotein of CNS neurons that is concentrated at the leading edge of growth cones.

    Science.gov (United States)

    Baumrind, N L; Parkinson, D; Wayne, D B; Heuser, J E; Pearlman, A L

    1992-08-01

    To identify cell-surface molecules that mediate interactions between neurons and their environment during neural development, we used monoclonal antibody techniques to define a developmentally regulated antigen in the central nervous system of the mouse. The antibody we produced (2A1) immunolabels cells throughout the central nervous system; we analyzed its distribution in the developing cerebral cortex, where it is expressed on cells very soon after they complete mitosis and leave the periventricular proliferative zone. Expression continues into adult life. The antibody also labels the epithelium of the choroid plexus and the renal proximal tubules, but does not label neurons of the peripheral nervous system in the dorsal root ganglia. In dissociated cell culture of embryonic cerebral cortex, 2A1 labels the surface of neurons but not glia. Immunolabeling of neurons in tissue culture is particularly prominent on the edge of growth cones, including filopodia and the leading edge of lamellipodia, when observed with either immunofluorescence or freeze-etch immunoelectron microscopy. Immunopurification with 2A1 of a CHAPS-extracted membrane preparation from brains of neonatal mice produces a broad (32-36 kD) electrophoretic band and a less prominent 70 kD band that are sensitive to N-glycosidase but not endoglycosidase H. Thus the 2A1 antibody recognizes a developmentally regulated, neuronal cell surface glycoprotein (or glycoproteins) with complex N-linked oligosaccharide side chains. We have termed the glycoprotein antigen EMA because of its prominence on the edge membrane of growth cones. EMA is similar to the M6 antigen (Lagenaur et al: J. Neurobiol. 23:71-88, 1992) in apparent molecular weight, distribution in tissue sections, and immunoreactivity on Western blots, suggesting that the two antigens are similar or identical. Expression of EMA is a very early manifestation of neuronal differentiation; its distribution on growth cones suggests a role in mediating the

  18. Thin film growth studies using time-resolved x-ray scattering

    Science.gov (United States)

    Kowarik, Stefan

    2017-02-01

    Thin-film growth is important for novel functional materials and new generations of devices. The non-equilibrium growth physics involved is very challenging, because the energy landscape for atomic scale processes is determined by many parameters, such as the diffusion and Ehrlich-Schwoebel barriers. We review the in situ real-time techniques of x-ray diffraction (XRD), x-ray growth oscillations and diffuse x-ray scattering (GISAXS) for the determination of structure and morphology on length scales from Å to µm. We give examples of time resolved growth experiments mainly from molecular thin film growth, but also highlight growth of inorganic materials using molecular beam epitaxy (MBE) and electrochemical deposition from liquids. We discuss how scaling parameters of rate equation models and fundamental energy barriers in kinetic Monte Carlo methods can be determined from fits of the real-time x-ray data.

  19. Texture control and growth mechanism of WSe{sub 2} film prepared by rapid selenization of W film

    Energy Technology Data Exchange (ETDEWEB)

    Li, Hongchao [State Key Laboratory of Powder Metallurgy, Central South University, Changsha 410083 (China); Chongyi Zhangyuan Tungsten Industry Corporation Limited, Ganzhou 341300 (China); Gao, Di; Li, Kun; Pang, Mengde; Xie, Senlin [State Key Laboratory of Powder Metallurgy, Central South University, Changsha 410083 (China); Liu, Rutie, E-mail: llrrtt@csu.edu.cn [State Key Laboratory of Powder Metallurgy, Central South University, Changsha 410083 (China); Zou, Jianpeng [State Key Laboratory of Powder Metallurgy, Central South University, Changsha 410083 (China)

    2017-02-01

    Highlights: • We present a highly efficient method for preparing WSe{sub 2} film by rapid selenization. • The W film phase composition has little effect on WSe{sub 2} film orientation. • W film density is a critical factor that influences the WSe{sub 2} orientation. • A growth model was proposed for two kinds of WSe{sub 2} film textures. - Abstract: The tungsten diselenide (WSe{sub 2}) films with different orientation present unique properties suitable for specific applications, such as WSe{sub 2} with a C-axis⊥substrate for optoelectronics and WSe{sub 2} with a C-axis // substrate for electrocatalysts. Orientation control of WSe{sub 2} is essential for realizing the practical applications. In this letter, a WSe{sub 2} film has been prepared via rapid selenization of a magnetron-sputtered tungsten (W) film. The influence of the magnetron-sputtered W film on WSe{sub 2} film growth was studied systematically. Scanning electron microscopy, X-ray diffractometry and high-resolution transmission electron microscopy were used to evaluate the morphology, microstructure and phase composition of the W and WSe{sub 2} films. The substrate temperature has a significant effect on the W film phase composition, but little effect on the WSe{sub 2} film orientation. The WSe{sub 2} orientation can be controlled by changing the W film microstructure. A dense W film that is deposited at low pressure is conducive to the formation of WSe{sub 2} with a C-axis⊥substrate, whereas a porous W film deposited at high pressure favors the formation of WSe{sub 2} with a C-axis // substrate. A growth model for the WSe{sub 2} film with different texture has been proposed based on the experimental results. The direction of selenium (Se) vapor diffusion differs at the top and side surfaces. This is a key factor for the preparation of anisotropic WSe{sub 2} films. Highly oriented WSe{sub 2} films with a C-axis⊥substrate grow from the dense W film deposited at low pressure because Se vapor

  20. Growth of anodic oxide films on oxygen-containing niobium

    Energy Technology Data Exchange (ETDEWEB)

    Habazaki, H. [Graduate School of Engineering, Hokkaido University, Sapporo 060-8628 (Japan)]. E-mail: habazaki@eng.hokudai.ac.jp; Ogasawara, T. [Graduate School of Engineering, Hokkaido University, Sapporo 060-8628 (Japan); Konno, H. [Graduate School of Engineering, Hokkaido University, Sapporo 060-8628 (Japan); Shimizu, K. [University Chemical Laboratory, Keio University, Yokohama 223-8522 (Japan); Asami, K. [Institute for Materials Research, Tohoku University, Sendai 980-8577 (Japan); Saito, K. [Institute for Materials Research, Tohoku University, Sendai 980-8577 (Japan); Nagata, S. [Institute for Materials Research, Tohoku University, Sendai 980-8577 (Japan); Skeldon, P. [Corrosion and Protection Centre, School of Materials, The University of Manchester, P.O. Box 88, Manchester M60 1QD (United Kingdom); Thompson, G.E. [Corrosion and Protection Centre, School of Materials, The University of Manchester, P.O. Box 88, Manchester M60 1QD (United Kingdom)

    2005-09-20

    The present study is directed at understanding of the influence of oxygen in the metal on anodic film growth on niobium, using sputter-deposited niobium containing from about 0-52 at.% oxygen, with anodizing carried out at high efficiency in phosphoric acid electrolyte. The findings reveal amorphous anodic niobia films, with no significant effect of oxygen on the field strength, transport numbers, mobility of impurity species and capacitance. However, since niobium is partially oxidized due to presence of oxygen in the substrate, less charge is required to form the films, hence reducing the time to reach a particular film thickness and anodizing voltage. Further, the relative thickness of film material formed at the metal/film interface is increased by the incorporation of oxygen species into the films from the substrate, with an associated altered depth of incorporation of phosphorus species into the films.

  1. Ion-induced stress relaxation during the growth of cubic boron nitride thin films

    Energy Technology Data Exchange (ETDEWEB)

    Abendroth, B.E.

    2004-08-01

    in this thesis the deposition of cubic boron nitride films by magnetron sputtering is described. The deposition process is analyzed by Langmuir-probe measurement and energy resolved mass spectroscopy. the films are studied by stress measurement, spectroscopic ellipsometry, infrared spectroscopy, elastic recoil detection analysis, Rutherford backscattering spectroscopy, X-ray absorption near edge spectroscopy, X-ray diffraction, and transmission electron microscopy. Discussed are the stress relaxation and the microstructure and bonding characteristics together with the effects of ion bombardement. (HSI)

  2. Nucleation and growth microstructural study of ti films on 304 SS substrates

    Directory of Open Access Journals (Sweden)

    Rogério de Almeida Vieira

    2004-09-01

    Full Text Available Coating of steel surfaces with titanium films has been studied with the objective to protect them against corrosion, and to create an intermediate film for CVD diamond and TiN film deposition. In this work, the nucleation, growth mechanisms and microstructural formation of the titanium films deposited on 304 stainless steel (304 SS substrate are presented and discussed. The titanium films of variable thickness were obtained by vapour phase deposition produced by electron beam. The surfaces of these samples were observed by scanning electron microscopy. The cross sections of these samples were observed by using an atomic force microscope. The Ti film-304 SS interfaces were analyzed by X-ray diffraction. The results showed that titanium films have a columnar growth. The Ti film-304 SS interface had a residual compression stress at room temperature due to the inter-diffusion process.

  3. Grain Growth in Nanocrystalline Mg-Al Thin Films

    Energy Technology Data Exchange (ETDEWEB)

    Kruska, Karen; Rohatgi, Aashish; Vemuri, Venkata Rama Ses; Kovarik, Libor; Moser, Trevor H.; Evans, James E.; Browning, Nigel D.

    2017-10-05

    An improved understanding of grain growth kinetics in nanocrystalline materials, and in metals and alloys in general, is of continuing interest to the scientific community. In this study, Mg - Al thin films containing ~10 wt.% Al and with 14.5 nm average grain size were produced by magnetron-sputtering and subjected to heat-treatments. The grain growth evolution in the early stages of heat treatment at 423 K (150 °C), 473 K (200 °C) and 573K (300 °C) was observed with transmission electron microscopy and analyzed based upon the classical equation developed by Burke and Turnbull. The grain growth exponent was found to be 7±2 and the activation energy for grain growth was 31.1±13.4 kJ/mol, the latter being significantly lower than in bulk Mg-Al alloys. The observed grain growth kinetics are explained by the Al supersaturation in the matrix and the pinning effects of the rapidly forming beta precipitates and possibly shallow grain boundary grooves. The low activation energy is attributed to the rapid surface diffusion which is dominant in thin film systems.

  4. AFM study of growth of Bi2Sr2-xLaxCuO6 thin films

    International Nuclear Information System (INIS)

    Haitao Yang; Hongjie Tao; Yingzi Zhang; Duogui Yang; Lin Li; Zhongxian Zhao

    1997-01-01

    c-axis-oriented Bi 2 Sr 1.6 La 0.4 CuO 6 thin films deposited on flat planes of (100)SrTiO 3 , (100)LaAlO 3 and (100)MgO substrates and vicinal planes (off-angle ∼ 6 deg.) of SrTiO 3 substrates by RF magnetron sputtering were studied by atomic force microscopy (AFM). T c of these films reached 29 K. Film thickness ranged from 15 nm to 600 nm. Two typical growth modes have been observed. AFM images of thin films on flat planes of substrates showed a terraced-island growth mode. By contrast, Bi-2201 thin films on vicinal planes of substrates showed a step-flow growth mode. The growth unit is a half-unit-cell in the c-axis for both growth modes. No example of spiral growth, which was thought to be the typical structure of YBCO thin films, was found in either of these kinds of thin films. (author)

  5. Epitaxial growth of atomically flat gadolinia-doped ceria thin films by pulsed laser deposition

    DEFF Research Database (Denmark)

    Chen, Yunzhong; Pryds, Nini; Schou, Jørgen

    2011-01-01

    Epitaxial growth of Ce0.8Gd0.2O2(CGO) films on (001) TiO2-terminated SrTiO3 substrates by pulsed laser deposition was investigated using in situ reflective high energy electron diffraction. The initial film growth shows a Stransky–Krastanov growth mode. However, this three-dimensional island...... formation is replaced by a two-dimensional island nucleation during further deposition, which results in atomically smooth CGO films. The obtained high-quality CGO films may be attractive for the electrolyte of solid-oxide fuel cells operating at low temperature....

  6. Effects of an ultraviolet-visible rays translation film on growth of leaf or root vegetables

    International Nuclear Information System (INIS)

    Hamamoto, H.; Ueno, K.; Yamazaki, K.

    2008-01-01

    A new film that absorbs ultraviolet radiation (UV) and fluoresces red light was tested as a rain shelter for the cultivation of turnip (Brassica rapa L.), spinach (Spinacia oleracea L.), and Welsh onion (Allium fistulosum L.). The effect of this UV-visible ray translation film on various growth parameters (height, fresh and dry weight, leaf area and leaf sheath diameter) was compared with those under normal clear film, new UV-cut film, and used UV-cut film respectively. The transmissivity of UV was about 70% for the normal clear film, about 20% for the UV-visible ray translation film and used UV-cut film, and about 10% for the new UV-cut film. The transmissivity of photosynthetically active radiation (PAR) was about 90% for the normal clear film and the new UV-cut film, and about 80% for the used UV-cut film, while the mean transmissivity of PAR was about 80% for the UV-visible ray translation film, with about 60% transmissivity of blue radiation and over 90% of red radiation. The UV-visible ray translation film did not promote the growth of turnip roots but did significantly promote the growth of spinaches and Welsh onions compared with the normal clear film. The UV-visible ray translation film cover promoted the growth of spinaches and Welsh onions to a similar or greater extent compared to the new UV-cut film and also to a greater extent compared to the used UV-cut film

  7. Growth and hematology of juvenile pacu Piaractus mesopotamicus (Holmberg 1887 fed with increasing levels of vitamin E (DL-α-tocopheryl acetate

    Directory of Open Access Journals (Sweden)

    RICARDO Y. SADO

    2013-03-01

    Full Text Available Intensive fish production systems are characterized by 100% artificial feeding, so any dietary imbalances or deficiencies may lead to diseases outbreaks and economic losses. This study was set out to determine the effects of increasing levels of dietary vitamin E on growth and hematology of juvenile pacu. Fishes were fed for 90 days, twice a day until apparent satiation with semi-purified diets containing 0.0; 25; 50; 150; 300 or 600 mg.kg−1 diet DL-α-tocopheryl acetate in a completely randomized design trial (n=4; biometrical and hematological data were collected and analyzed. Fishes fed with vit E diet (150 mg.kg−1 showed higher (p<0.05 weight gain and specific growth. Hematocrit, erythroblast number and total plasma protein were increased (p<0.05 in fishes fed diet with no vit E diet. Vitamin E supplementation in artificial diets for pacu is essential for growth and maintenance of normal erythropoiesis.

  8. Growth, motor, and social development in breast- and formula-fed infants of metformin-treated women with polycystic ovary syndrome.

    Science.gov (United States)

    Glueck, Charles J; Salehi, Marzieh; Sieve, Luann; Wang, Ping

    2006-05-01

    To test the hypothesis that metformin during lactation versus formula feeding would have no adverse effects on infants' growth, motor-social development, or intercurrent illness. Growth, motor-social development, and illness requiring a pediatrician visit were assessed in 61 nursing infants (21 male, 40 female) and 50 formula-fed infants (19 male, 31 female) born to 92 mothers with polycystic ovary syndrome (PCOS) taking a median of 2.55 g metformin per day throughout pregnancy and lactation. Within sex, at 3 and 6 months of age, weight, height, and motor-social development did not differ (p > or = .06) between breast- and formula-fed infants. No infants had retardation of growth, motor, or social development. Intercurrent illnesses did not differ. Metformin during lactation appears to be safe and effective in the first 6 months of infancy.

  9. EuO and Gd-doped EuO thin films. Epitaxial growth and properties

    International Nuclear Information System (INIS)

    Sutarto, Ronny

    2009-01-01

    quality of many of the doped EuO samples used in the past bulk studies. The focus of this thesis is on the preparation and the properties of high-quality single-crystalline EuO and Gd-doped EuO thin films. The so-called Eu-distillation-assisted molecular beam epitaxy (MBE) has been employed to achieve full control of the stoichiometry. The films have been epitaxially grown on yttria-stabilized cubic zirconia (YSZ) (001) substrates. By a systematic variation of the oxygen deposition rates, we have been able to observe sustained oscillations in the intensity of the reflection high-electron energy diffraction (RHEED) pattern during growth. We thus have demonstrated that layer-by-layer growth has been achieved for the first time. We also have confirmed that YSZ indeed supplies oxygen during the initial stages of growth, yet the EuO stoichiometry can still be well maintained. In the case of Gd-doped EuO films, the presence of Gd even helps to stabilize the layer-by-layer growth mode. It is important to achieve this growth mode, since it enables the preparation of films with very smooth and at surfaces. This in turn facilitates the capping of the films with a thin Al overlayer in order to protect the films against degradation under ambient conditions. More important, the smoothness of the lm will enable the preparation of high quality device structures. By using ex-situ soft x-ray absorption spectroscopy (XAS) at the Eu and Gd M 4,5 edges, we have confirmed that the films are completely free from Eu 3+ contaminants, and we were able to determine reliably the actual Gd concentration. This actual Gd concentration could in fact significantly deviate from the nominal Gd/Eu evaporation ratio. From magnetization and susceptibility measurements, we found the Curie temperature to increase smoothly as a function of doping from 69 K up to a maximum of 125 K, all with a saturation moment of 7 μB. A threshold behavior was not observed for Gd concentrations as low as 0.2 %. Analysis of the

  10. EuO and Gd-doped EuO thin films. Epitaxial growth and properties

    Energy Technology Data Exchange (ETDEWEB)

    Sutarto, Ronny

    2009-07-06

    this respect the quality of many of the doped EuO samples used in the past bulk studies. The focus of this thesis is on the preparation and the properties of high-quality single-crystalline EuO and Gd-doped EuO thin films. The so-called Eu-distillation-assisted molecular beam epitaxy (MBE) has been employed to achieve full control of the stoichiometry. The films have been epitaxially grown on yttria-stabilized cubic zirconia (YSZ) (001) substrates. By a systematic variation of the oxygen deposition rates, we have been able to observe sustained oscillations in the intensity of the reflection high-electron energy diffraction (RHEED) pattern during growth. We thus have demonstrated that layer-by-layer growth has been achieved for the first time. We also have confirmed that YSZ indeed supplies oxygen during the initial stages of growth, yet the EuO stoichiometry can still be well maintained. In the case of Gd-doped EuO films, the presence of Gd even helps to stabilize the layer-by-layer growth mode. It is important to achieve this growth mode, since it enables the preparation of films with very smooth and at surfaces. This in turn facilitates the capping of the films with a thin Al overlayer in order to protect the films against degradation under ambient conditions. More important, the smoothness of the lm will enable the preparation of high quality device structures. By using ex-situ soft x-ray absorption spectroscopy (XAS) at the Eu and Gd M{sub 4,5} edges, we have confirmed that the films are completely free from Eu{sup 3+} contaminants, and we were able to determine reliably the actual Gd concentration. This actual Gd concentration could in fact significantly deviate from the nominal Gd/Eu evaporation ratio. From magnetization and susceptibility measurements, we found the Curie temperature to increase smoothly as a function of doping from 69 K up to a maximum of 125 K, all with a saturation moment of 7 {mu}B. A threshold behavior was not observed for Gd concentrations

  11. An effective method for smoothing the staggered dose distribution of multi-leaf collimator field edge

    International Nuclear Information System (INIS)

    Hwang, I.-M.; Lin, S.-Y.; Lee, M.-S.; Wang, C.-J.; Chuang, K.-S.; Ding, H.-J.

    2002-01-01

    Purpose: To smooth the staggered dose distribution that occurs in stepped leaves defined by a multi-leaf collimator (MLC). Materials and methods: The MLC Shaper program controlled the stepped leaves, which were shifted in a traveling range, the pattern of shift was from the position of out-bound to in-bound with a one-segment (cross-bound), three-segment, and five-segment shifts. Film was placed at a depth of 1.5 cm and irradiated with the same irradiation dose used for the cerrobend block experiment. Four field edges with the MLC defining at 15 deg., 30 deg., 45 deg., 60 deg. angels relative to the jaw edge were performed, respectively, in this study. For the field edge defined by the multi-segment technique, the amplitude of the isodose lines for 50% isodose line and both the 80% and 20% isodose lines were measured. The effective penumbra widths with 90-10% and 80-20% distances for different irradiations were determined at four field edges with the MLC defining at 15 deg., 30 deg., 45 deg., 60 deg. angels relative to the jaw edge. Results: Use of the five-segment technique for multi-leaf collimation at the 60 deg. angle field edge smoothes each isodose line into an effectively straight line, similar to the pattern achieved using a cerrobend block. The separation of these lines is also important. The 80-20% effective penumbra width with five-segment techniques (8.23 mm) at 60 deg. angle relative to the jaw edge is little wider (1.9 times) than the penumbra of cerrobend block field edge (4.23 mm). We also found that the 90-10% effective penumbra width with five-segment techniques (12.68 mm) at 60 deg. angle relative to the jaw edge is little wider (1.28 times) than the penumbra of cerrobend block field edge (9.89 mm). Conclusion: The multi-segment technique is effective in smoothing the MLC staggered field edge. The effective penumbra width with more segment techniques at larger degree angles relative to the field edge is little wider than the penumbra for a

  12. Matrix Assisted Pulsed Laser Evaporation for growth of fullerene thin films

    DEFF Research Database (Denmark)

    Canulescu, Stela; Schou, Jørgen; Fæster Nielsen, Søren

    C60 fullerene thin films of average thickness of more than 100 nm can be produced in vacuum by matrix-assisted pulsed laser evaporation (MAPLE). A 355 nm Nd:YAG laser was directed onto a frozen target of anisole with a concentration of 0.67 wt% C60. At laser fluences below 1.5 J/cm2, a dominant...... fraction of the film molecules are C60 transferred to the substrate without any fragmentation. Highresolution SEM images of MAPLE deposited films reveal large circular droplets on the surface with high amount of material concentrated at edges (Fig. 1A). These features, observed over a wide range of laser...... fluences, are caused by ejection of large matrix-fullerene liquid droplets into the gas-phase and subsequent deposition. At similar laser energies, but using an unfocused laser beam, MAPLE favours evaporation of matrix and organic molecules, resulting in production of films with smooth surfaces and minimal...

  13. Self-regulated growth of LaVO3 thin films by hybrid molecular beam epitaxy

    International Nuclear Information System (INIS)

    Zhang, Hai-Tian; Engel-Herbert, Roman; Dedon, Liv R.; Martin, Lane W.

    2015-01-01

    LaVO 3 thin films were grown on SrTiO 3 (001) by hybrid molecular beam epitaxy. A volatile metalorganic precursor, vanadium oxytriisopropoxide (VTIP), and elemental La were co-supplied in the presence of a molecular oxygen flux. By keeping the La flux fixed and varying the VTIP flux, stoichiometric LaVO 3 films were obtained for a range of cation flux ratios, indicating the presence of a self-regulated growth window. Films grown under stoichiometric conditions were found to have the largest lattice parameter, which decreased monotonically with increasing amounts of excess La or V. Energy dispersive X-ray spectroscopy and Rutherford backscattering measurements were carried out to confirm film compositions. Stoichiometric growth of complex vanadate thin films independent of cation flux ratios expands upon the previously reported self-regulated growth of perovskite titanates using hybrid molecular beam epitaxy, thus demonstrating the general applicability of this growth approach to other complex oxide materials, where a precise control over film stoichiometry is demanded by the application

  14. Growth of Ge films by cluster beam deposition

    CERN Document Server

    Xu, J L; Feng, J Y

    2002-01-01

    Ge epitaxial layers with reasonable quality were grown on the Si(1 1 1) substrates by cluster beam deposition (CBD) process. The growth temperature plays a dominant role in the epitaxial growth of Ge films. The substrate temperature for epitaxial growth is about 500 deg. C, which is lower than the reported critical temperature of Ge epitaxial growth by MBE and CVD. A stress induced phase transition of Ge lattice from cubic to tetragonal is also observed in the CBD process, and the mechanism is discussed.

  15. A nonlinear model for surface segregation and solute trapping during planar film growth

    International Nuclear Information System (INIS)

    Han, Xiaoying; Spencer, Brian J.

    2007-01-01

    Surface segregation and solute trapping during planar film growth is one of the important issues in molecular beam epitaxy, yet the study on surface composition has been largely restricted to experimental work. This paper introduces some mathematical models of surface composition during planar film growth. Analytical solutions are obtained for the surface composition during growth

  16. Voluntary running of defined distances reduces body adiposity and its associated inflammation in C57BL/6 mice fed a high-fat diet.

    Science.gov (United States)

    Yan, Lin; Sundaram, Sneha; Nielsen, Forrest H

    2017-11-01

    This study investigated the effect of voluntary running of defined distances on body adiposity in male C57BL/6 mice fed a high-fat diet. Mice were assigned to 6 groups and fed a standard AIN93G diet (sedentary) or a modified high-fat AIN93G diet (sedentary; unrestricted running; or 75%, 50%, or 25% of unrestricted running) for 12 weeks. The average running distance was 8.3, 6.3, 4.2, and 2.1 km/day for the unrestricted, 75%, 50%, and 25% of unrestricted runners, respectively. Body adiposity was 46% higher in sedentary mice when fed the high-fat diet instead of the standard diet. Running decreased adiposity in mice fed the high-fat diet in a dose-dependent manner but with no significant difference between sedentary mice and those running 2.1 km/day. In sedentary mice, the high-fat instead of the standard diet increased insulin resistance, hepatic triacylglycerides, and adipose and plasma concentrations of leptin and monocyte chemotactic protein-1 (MCP-1). Running reduced these variables in a dose-dependent manner. Adipose adiponectin was lowest in sedentary mice fed the high-fat diet; running raised adiponectin in both adipose tissue and plasma. Running 8.3 and 6.3 km/day had the greatest, but similar, effects on the aforementioned variables. Running 2.1 km/day did not affect these variables except, when compared with sedentariness, it significantly decreased MCP-1. The findings showed that running 6.3 kg/day was optimal for reducing adiposity and associated inflammation that was increased in mice by feeding a high-fat diet. The findings suggest that voluntary running of defined distances may counteract the obesogenic effects of a high-fat diet.

  17. Growth rate of sheep fed high fat ration

    Directory of Open Access Journals (Sweden)

    Darwinsyah Lubis

    1998-10-01

    Full Text Available Incorporating high amount of fats into the ration for ruminants will affect the rumen microbes adversely and will reducefiber digestion potential. To correct such negative effects, the free fatty acids used for feed should be bond with Ca++, so it canpassing through the rumen savely (rumen by-pass fat. To test the Ca-fat utilization biologically, 20 growing male Garut shee pwere used and fed with 4 type of isocaloric-isoprotein concentrate feed which were allotted based on a randomized block desig nwith 5 replications. The concentrate (C-A was a positive control diet, while C-B was substituted with 10% free fatty acids (negative control, C-C was substituted with 10% Ca-fat, and C-D with 15% Ca-fat. The concentrate feed was fed at 500 g/d, while forage (King grass was 4 kg/d. Results of the experiment showed that the negative effect of free fatty acids can be corrected if it was given in the form of Ca-fat. Growth rate curve indicating a good growing pattern, with average daily gain was 100.18, 87.68, 112.86, and 115.00 g/d (P0.05. Carcass production was relatively good, where for C-A, C-B, C-C, and C-D were 14.84, 14.68, 16.34, and 15.72 kg (P<0.05 respectively, with final live weights of 34.00, 31.74, 34.58, and 34.30 kg (P<0.05. It can be concluded that Ca-fat (rumen by-pass fat can be used as an energy source component for growing sheep diet, and give the best result at 10% substitution rate in concentrate feed.

  18. Adsorption-controlled growth of BiMnO3 films by molecular-beam epitaxy

    International Nuclear Information System (INIS)

    Lee, J. H.; Ke, X.; Misra, R.; Schiffer, P.; Ihlefeld, J. F.; Mei, Z. G.; Liu, Z. K.; Xu, X. S.; Musfeldt, J. L.; Heeg, T.; Schlom, D. G.; Roeckerath, M.; Schubert, J.

    2010-01-01

    We have developed the means to grow BiMnO 3 thin films with unparalleled structural perfection by reactive molecular-beam epitaxy and determined its band gap. Film growth occurs in an adsorption-controlled growth regime. Within this growth window bounded by oxygen pressure and substrate temperature at a fixed bismuth overpressure, single-phase films of the metastable perovskite BiMnO 3 may be grown by epitaxial stabilization. X-ray diffraction reveals phase-pure and epitaxial films with ω rocking curve full width at half maximum values as narrow as 11 arc sec (0.003 deg. ). Optical absorption measurements reveal that BiMnO 3 has a direct band gap of 1.1±0.1 eV.

  19. In situ spectroscopic ellipsometry as a surface sensitive tool to probe thin film growth

    International Nuclear Information System (INIS)

    Liu, C.

    1999-01-01

    Sputtered thin film and multilayer x-ray mirrors are made routinely at the Advanced Photon Source (APS) for the APS users. Precise film growth control and characterization are very critical in fabricating high-quality x-ray mirrors. Film thickness calibrations are carried out using in situ and ex situ spectroscopic ellipsometry, interferometry, and x-ray scattering. To better understand the growth and optical properties of different thin film systems, we have carried out a systematic study of sputtered thin films of Au, Rh, Pg Pd, Cu, and Cr, using in situ ellipsometry. Multiple data sets were obtained in situ for each film material with incremental thicknesses and were analyzed with their correlation in mind. We found that in situ spectroscopic ellipsometry as a surface-sensitive tool can also be used to probe the growth and morphology of the thin film system. This application of in situ spectroscopic ellipsometry for metal thin film systems will be discussed

  20. Competing edge networks

    International Nuclear Information System (INIS)

    Parsons, Mark; Grindrod, Peter

    2012-01-01

    We introduce a model for a pair of nonlinear evolving networks, defined over a common set of vertices, subject to edgewise competition. Each network may grow new edges spontaneously or through triad closure. Both networks inhibit the other's growth and encourage the other's demise. These nonlinear stochastic competition equations yield to a mean field analysis resulting in a nonlinear deterministic system. There may be multiple equilibria; and bifurcations of different types are shown to occur within a reduced parameter space. This situation models competitive communication networks such as BlackBerry Messenger displacing SMS; or instant messaging displacing emails. -- Highlights: ► A model for edgewise-competing evolving network pairs is introduced. ► Defined competition equations yield to a mean field analysis. ► Multiple equilibrium states and different bifurcation types can occur. ► The system is sensitive to sparse initial conditions and near unstable equilibriums.

  1. Film growth kinetics and electric field patterning during electrospray deposition of block copolymer thin films

    Science.gov (United States)

    Toth, Kristof; Hu, Hanqiong; Choo, Youngwoo; Loewenberg, Michael; Osuji, Chinedum

    The delivery of sub-micron droplets of dilute polymer solutions to a heated substrate by electrospray deposition (ESD) enables precisely controlled and continuous growth of block copolymer (BCP) thin films. Here we explore patterned deposition of BCP films by spatially varying the electric field at the substrate using an underlying charged grid, as well as film growth kinetics. Numerical analysis was performed to examine pattern fidelity by considering the trajectories of charged droplets during flight through imposed periodic field variations in the vicinity of the substrate. Our work uncovered an unexpected modality for improving the resolution of the patterning process via stronger field focusing through the use of a second oppositely charged grid beneath a primary focusing array, with an increase in highly localized droplet deposition on the intersecting nodes of the grid. Substrate coverage kinetics are considered for homopolymer deposition in the context of simple kinetic models incorporating temperature and molecular weight dependence of diffusivity. By contrast, film coverage kinetics for block copolymer depositions are additionally convoluted with preferential wetting and thickness-periodicity commensurability effects. NSF GRFP.

  2. Climate threats on growth of rear-edge European beech peripheral populations in Spain

    NARCIS (Netherlands)

    Dorado-Liñán, I.; Akhmetzyanov, L.; Menzel, A.

    2017-01-01

    European beech (Fagus sylvatica L.) forests in the Iberian Peninsula are a clear example of a temperate forest tree species at the rear edge of its large distribution area in Europe. The expected drier and warmer climate may alter tree growth and species distribution. Consequently, the peripheral

  3. Metalorganic chemical vapor deposition of Er{sub 2}O{sub 3} thin films: Correlation between growth process and film properties

    Energy Technology Data Exchange (ETDEWEB)

    Giangregorio, Maria M. [Institute of Inorganic Methodologies and of Plasmas, IMIP-CNR and INSTM sez. Bari, Via Orabona 4, 70125 Bari (Italy)], E-mail: michelaria.giangregorio@ba.imip.cnr.it; Losurdo, Maria; Sacchetti, Alberto; Capezzuto, Pio; Bruno, Giovanni [Institute of Inorganic Methodologies and of Plasmas, IMIP-CNR and INSTM sez. Bari, Via Orabona 4, 70125 Bari (Italy)

    2009-02-27

    Er{sub 2}O{sub 3} thin films have been grown by metalorganic chemical vapor deposition (MOCVD) at 600 deg. C on different substrates, including glass, Si (100) and sapphire (0001) using tris(isopropylcyclopentadienyl)erbium and O{sub 2}. The effects of growth parameters such as the substrate, the O{sub 2} plasma activation and the temperature of organometallic precursor injection, on the nucleation/growth kinetics and, consequently, on film properties have been investigated. Specifically, very smooth (111)-oriented Er{sub 2}O{sub 3} thin films (the root mean square roughness is 0.3 nm) are achieved on Si (100), {alpha}-Al{sub 2}O{sub 3} (0001) and amorphous glass by MOCVD. Growth under O{sub 2} remote plasma activation results in an increase in growth rate and in (100)-oriented Er{sub 2}O{sub 3} films with high refractive index and transparency in the visible photon energy range.

  4. Enhancement of growth performance and hematological changes in rainbow trout (Onchorhynchus mykiss alevins fed with Bifidobacterium bacteria

    Directory of Open Access Journals (Sweden)

    Javad Sahandi

    2017-04-01

    Full Text Available The study of probiotic application as an important rearing strategy was started more than 30 years ago and most of these studies were carried out to increase growth and survival of larvae. Effect of Bifidobacterium animalis PTTC-1631 and B. lactis PTTC-1736 as probiotic supplement has been studied on growth performance and hematological changes on rainbow trout, Oncorhynchus mykiss alevins with initial body weight of 0.583 ± 0.197 g. The commercial diet was supplemented with graded levels of probiotics (1×107, 2×107 and 3×107 CFU g-1 dry feed to obtain 3 sets of experimental diets (T1, T2, andT3 respectively and fed four times a day for 60 days. T1 alevin showed the best growth performance in terms of specific growth rate, weight gain, metabolic growth rate, feed conversion ratio and survival rate. The highest red and white blood cell concentrations were noticed in fish fed T2 and T3 diets, respectively, no significant difference was observed in hemoglobin content. T1 showed the significant elevation of serum biochemical parameters and reduction of cortisol level. The results of present study might suggest likely positive effects of probiotic supplements with concentration of 1×107 CFU g-1 dry feed on growth and hematology on rainbow trout alevins.

  5. Growth of AlN films and their characterization

    Energy Technology Data Exchange (ETDEWEB)

    Jain, Rakesh B.; Gao, Ying; Zhang, Jianping; Qhaleed Fareed, R.S.; Gaska, Remis [Sensor Electronic Technology, Inc., 1195 Atlas Rd., Columbia, SC 29209 (United States); Li, Jiawei; Arjunan, Arulchakkravarthi; Yang, Jinwei; Asif Khan, M. [Department of Electrical Engineering, University of South Carolina, Columbia, SC 29208 (United States); Kuokstis, Edmundas [MTMI, Vilnius University, Vilnius (Lithuania)

    2006-06-15

    Single crystal AlN layers have been produced by migration enhanced metal organic chemical vapor deposition (MEMOCVD), hydride vapor phase epitaxy (HVPE) and their combination. The growth was carried out on 2'' basal plane sapphire substrates. In MEMOCVD, the duration and waveforms of precursors were varied to achieve better surface mobility and thus better atomic incorporation. It resulted in superior layer quality templates with the narrowest (002) X-ray rocking curve full width half maximum (FWHM). Such high quality AlN templates were used as seeds for subsequent HVPE growth. Thick films with thickness ranging from 1-25 {mu}m have been grown by HVPE with growth rates as high as 200 {mu}m/min, highest ever reported. Films grown by the two methods have been extensively characterized by Nomarski microscopy, scanning electron microscopy (SEM), atomic force microscopy (AFM), high-resolution X-ray diffractometry (HRXRD), and photoluminescence (PL). (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  6. Structure and morphology of magnetron sputter deposited ultrathin ZnO films on confined polymeric template

    Energy Technology Data Exchange (ETDEWEB)

    Singh, Ajaib [Discipline of Metallurgy Engineering and Materials Science, Indian Institute of Technology Indore, Indore 453552 (India); Schipmann, Susanne [II. Insatitute of Physics and JARA-FIT, RWTH Aachen University, 52056 Aachen (Germany); Mathur, Aakash; Pal, Dipayan [Discipline of Metallurgy Engineering and Materials Science, Indian Institute of Technology Indore, Indore 453552 (India); Sengupta, Amartya [Department of Physics, Indian Institute of Technology Delhi, Delhi 110016 (India); Klemradt, Uwe [II. Insatitute of Physics and JARA-FIT, RWTH Aachen University, 52056 Aachen (Germany); Chattopadhyay, Sudeshna, E-mail: sudeshna@iiti.ac.in [Discipline of Metallurgy Engineering and Materials Science, Indian Institute of Technology Indore, Indore 453552 (India); Discipline of Physics, Indian Institute of Technology Indore, Indore 453552 (India); Centre for Biosciences and Biomedical Engineering, Indian Institute of Technology Indore, Indore 453552 (India)

    2017-08-31

    Highlights: • Ultra-thin ZnO films grown on confined polymeric (polystyrene, PS) template. • XRR and GISAXS explore the surface/interfaces structure and morphology of ZnO/PS. • Insights into the growth mechanism of magnetron sputtered ZnO thin film on PS template. • Nucleated disk-like cylindrical particles are the basis of the formation of ZnO layers. • Effect of ZnO film thickness on room temperature PL spectra in ZnO/PS systems. - Abstract: The structure and morphology of ultra-thin zinc oxide (ZnO) films with different film thicknesses on confined polymer template were studied through X-ray reflectivity (XRR) and grazing incidence small angle X-ray scattering (GISAXS). Using magnetron sputter deposition technique ZnO thin films with different film thicknesses (<10 nm) were grown on confined polystyrene with ∼2R{sub g} film thickness, where R{sub g} ∼ 20 nm (R{sub g} is the unperturbed radius of gyration of polystyrene, defined by R{sub g} = 0.272 √M{sub 0}, and M{sub 0} is the molecular weight of polystyrene). The detailed internal structure, along the surface/interfaces and the growth direction of the system were explored in this study, which provides insight into the growth procedure of ZnO on confined polymer and reveals that a thin layer of ZnO, with very low surface and interface roughness, can be grown by DC magnetron sputtering technique, with approximately full coverage (with bulk like electron density) even in nm order of thickness, in 2–7 nm range on confined polymer template, without disturbing the structure of the underneath template. The resulting ZnO-polystyrene hybrid systems show strong ZnO near band edge (NBE) and deep-level (DLE) emissions in their room temperature photoluminescence spectra, where the contribution of DLE gets relatively stronger with decreasing ZnO film thickness, indicating a significant enhancement of surface defects because of the greater surface to volume ratio in thinner films.

  7. Visualization modeling of thin film growth in photodeposition processes

    International Nuclear Information System (INIS)

    Mirchin, N.; Sidi, M.; Muchnik, Y.; Peled, A.

    2003-01-01

    A computer visualization technique, which analyzes and predicts the spatio-temporal evolution of thin film deposition and growth processes is given. It relies on microscopy sampled or computer generated synthetic micrographs of particles. These are then simulated for deposition, aggregation and coagulation during thin film growth by frequency domain transform techniques. Particle sources and diffusion operators on surfaces are used to predict with high temporal resolution, unattained by real world microscopy the surface structure evolution as time samples and time movies. The simulation program was used to investigate deposition and diffusive profiles in photodeposition experiments, starting from initial synthetic micrographs based on real world scanning electron microscopy (SEM) images. The surface microstructure time 'tracking' scheme described here relies on transforming the original image of the deposited particles into a Fourier spatial frequency domain image. The physical models used are that of a material random deposition source and subsequent surface redistribution due to diffusion and other coalescence material surface flow mechanisms. The 2-D inverse Fourier transform (IFT) is finally used to obtain back the real space-time images representing the surface spatio-temporal films morphology changes. False color representation of the images allows for a better discrimination of the films growing details especially during the fast pre-compact thin film layer formation on the substrate

  8. Perovskite Oxide Thin Film Growth, Characterization, and Stability

    Science.gov (United States)

    Izumi, Andrew

    Studies into a class of materials known as complex oxides have evoked a great deal of interest due to their unique magnetic, ferroelectric, and superconducting properties. In particular, materials with the ABO3 perovskite structure have highly tunable properties because of the high stability of the structure, which allows for large scale doping and strain. This also allows for a large selection of A and B cations and valences, which can further modify the material's electronic structure. Additionally, deposition of these materials as thin films and superlattices through techniques such as pulsed laser deposition (PLD) results in novel properties due to the reduced dimensionality of the material. The novel properties of perovskite oxide heterostructures can be traced to a several sources, including chemical intermixing, strain and defect formation, and electronic reconstruction. The correlations between microstructure and physical properties must be investigated by examining the physical and electronic structure of perovskites in order to understand this class of materials. Some perovskites can undergo phase changes due to temperature, electrical fields, and magnetic fields. In this work we investigated Nd0.5Sr 0.5MnO3 (NSMO), which undergoes a first order magnetic and electronic transition at T=158K in bulk form. Above this temperature NSMO is a ferromagnetic metal, but transitions into an antiferromagnetic insulator as the temperature is decreased. This rapid transition has interesting potential in memory devices. However, when NSMO is deposited on (001)-oriented SrTiO 3 (STO) or (001)-oriented (LaAlO3)0.3-(Sr 2AlTaO6)0.7 (LSAT) substrates, this transition is lost. It has been reported in the literature that depositing NSMO on (110)-oriented STO allows for the transition to reemerge due to the partial epitaxial growth, where the NSMO film is strained along the [001] surface axis and partially relaxed along the [11¯0] surface axis. This allows the NSMO film enough

  9. Diamond film growth with modification properties of adhesion between substrate and diamond film

    Directory of Open Access Journals (Sweden)

    Setasuwon P.

    2004-03-01

    Full Text Available Diamond film growth was studied using chemical vapor deposition (CVD. A special equipment was build in-house, employing a welding torch, and substrate holder with a water-cooling system. Acetylene and oxygen were used as combustion gases and the substrate was tungsten carbide cobalt. It was found that surface treatments, such as diamond powder scratching or acid etching, increase the adhesion and prevent the film peel-off. Diamond powder scratching and combined diamond powder scratching with acid etching gave the similar diamond film structure with small grain and slightly rough surface. The diamond film obtained with both treatments has high adhesion and can withstand internal stress better than ones obtained by untreated surface or acid etching alone. It was also found that higher substrate temperature produced smoother surface and more uniform diamond grain.

  10. Biodegradable and bioactive CGP/PVA film for fungal growth inhibition.

    Science.gov (United States)

    Silva, Bárbara Dumas S; Ulhoa, Cirano J; Batista, Karla A; Di Medeiros, Maria Carolina; Da Silva Filho, Rômulo Roosevelt; Yamashita, Fabio; Fernandes, Kátia F

    2012-07-01

    In this study, chitinolytic enzymes produced by Trichoderma asperellum were immobilized on a biodegradable film manufactured with a blend of cashew gum polysaccharide (CGP) and polyvinyl alcohol (PVA), and tested as a fungal growth inhibitor. The film was produced by casting a blend of CGP and PVA solution on glass molds. The CGP/PVA film showed 68% water solubility, tensile strength of 23.7 MPa, 187.2% elongation and 52% of mass loss after 90 days in soil. The presence of T-CWD enzymes immobilized by adsorption or covalent attachment resulted in effective inhibition of fungal growth. Sclerotinia sclerotiorum was the most sensitive organism, followed by Aspergillus niger and Penicillium sp. SEM micrograph showed that the presence of immobilized T-CWD enzymes on CGP/PVA film produced morphological modifications on vegetative and germinative structures of the microorganisms, particularly hyphae disruption and changes of spores shape. Copyright © 2012 Elsevier Ltd. All rights reserved.

  11. Intrinsic stress evolution during amorphous oxide film growth on Al surfaces

    International Nuclear Information System (INIS)

    Flötotto, D.; Wang, Z. M.; Jeurgens, L. P. H.; Mittemeijer, E. J.

    2014-01-01

    The intrinsic stress evolution during formation of ultrathin amorphous oxide films on Al(111) and Al(100) surfaces by thermal oxidation at room temperature was investigated in real-time by in-situ substrate curvature measurements and detailed atomic-scale microstructural analyses. During thickening of the oxide a considerable amount of growth stresses is generated in, remarkably even amorphous, ultrathin Al 2 O 3 films. The surface orientation-dependent stress evolutions during O adsorption on the bare Al surfaces and during subsequent oxide-film growth can be interpreted as a result of (i) adsorption-induced surface stress changes and (ii) competing processes of free volume generation and structural relaxation, respectively

  12. Thin films growth parameters in MAPLE; application to fibrinogen

    International Nuclear Information System (INIS)

    Jelinek, M; Cristescu, R; Kocourek, T; Vorlicek, V; Remsa, J; Stamatin, L; Mihaiescu, D; Stamatin, I; Mihailescu, I N; Chrisey, D B

    2007-01-01

    Increasingly requirements on the thin film quality of functionalized materials are efficiently met by a novel laser processing technique - Matrix Assisted Pulsed Laser Evaporation (MAPLE). Examples of deposition conditions and main features characteristic to film growth rate of MAPLE-fabricated organic materials are summarized. MAPLE experimental results are compared with ones corresponding to the classical Pulsed Laser Deposition (PLD). In particular, the results of investigation of MAPLE-deposited fibrinogen blood protein thin films using a KrF* excimer laser and characterized by FTIR and Raman spectrometry are reported

  13. Growth performance and antioxidant enzyme activities in rainbow trout (Oncorhynchus mykiss) juveniles fed diets supplemented with sage, mint and thyme oils.

    Science.gov (United States)

    Sönmez, Adem Yavuz; Bilen, Soner; Alak, Gonca; Hisar, Olcay; Yanık, Talat; Biswas, Gouranga

    2015-02-01

    This study evaluated effects of dietary supplementation of sage (Salvia officinalis), mint (Mentha spicata) and thyme (Thymus vulgaris) oils on growth performance, lipid peroxidation level (melondialdehyde, MDA) and liver antioxidant enzyme activities (superoxide dismutase, SOD; catalase, CAT; glucose-6-phosphate dehydrogenase, G6PD; glutathione reductase, GR; glutathione-S-transferase, GST and glutathione peroxidase, GPx) in rainbow trout (Oncorhynchus mykiss) juveniles. For this purpose, triplicate groups of rainbow trout were fed daily ad libitum with diets containing sage, mint and thyme oils at 500, 1,000 and 1,500 mg kg(-1) for 60 days. While weight gain percentage of fish fed the diets containing sage and thyme oils was significantly higher than the control group, that of fish fed mint oil was the lowest. Similarly, specific growth rate was found to be the highest in all groups of the sage and thyme oil feeding and the lowest in the mint groups. Moreover, feed conversion ratio was significantly higher in the mint oil administered groups. Survival rate was also significantly reduced in the fish fed the diet containing mint oil. It was observed that SOD, G6PD and GPx activities were significantly increased in liver tissues of all the treated fish groups compared to that of control diet-fed group. However, CAT, GST and GR activities were significantly decreased in experimental diet-fed fish groups at the end of the experiment. On the other hand, a significant reduction was found in MDA levels in the fish fed the diets with sage and thyme oils compared to control and mint diets on the 30th and 60th days of experiment. Overall, dietary inclusion of sage and thyme oils is effective in enhancing rainbow trout growth, reduction in MDA and least changing antioxidant enzyme activities at a low level of 500 mg kg(-1) diet, and they can be used as important feed supplements for rainbow trout production.

  14. Morphological analysis of co-evaporated blend films based on initial growth for organic photovoltaics

    Energy Technology Data Exchange (ETDEWEB)

    Shibata, Yosei, E-mail: yosei.shibata@aist.go.jp [Research Center for Photovoltaic Technologies, National Institute of Advanced Industrial Science and Technology, 1-1-1 Higashi, Tsukuba, Ibaraki 305-8565 (Japan); Taima, Tetsuya [Research Center for Photovoltaic Technologies, National Institute of Advanced Industrial Science and Technology, 1-1-1 Higashi, Tsukuba, Ibaraki 305-8565 (Japan); Japan Science and Technology Agency, PRESTO, 4-1-8 Honcho, Kawaguchi, Saitama 332-0012 (Japan); Zhou, Ying; Ohashi, Noboru; Kono, Takahiro [Research Center for Photovoltaic Technologies, National Institute of Advanced Industrial Science and Technology, 1-1-1 Higashi, Tsukuba, Ibaraki 305-8565 (Japan); Yoshida, Yuji, E-mail: yuji.yoshida@aist.go.jp [Research Center for Photovoltaic Technologies, National Institute of Advanced Industrial Science and Technology, 1-1-1 Higashi, Tsukuba, Ibaraki 305-8565 (Japan)

    2015-11-15

    Graphical abstract: - Highlights: • Initial growth mode of co-evaporated films was observed. • Balanced crystal growth leads to improvement of photovoltaic performance. • Crystal growth of fullerene during co-evaporation process was restricted. • The power conversion efficiency of 3% was obtained without electron blocking layer. - Abstract: Bulk heterojunction structures composed of electron donor and acceptor molecules for application in high-performance organic photovoltaics studied. To fabricate these structures, the co-evaporation method in vacuum is commonly applied; however, the details of the crystal growth process during co-evaporation have not yet been established. Here, we focused on structural analysis of blend films composed of phthalocyanine and fullerene based on initial growth stage. Similar crystal growth behavior to that typically observed in single-component molecules is obtained for the films. These results suggest that the competitive crystal growth between donors and acceptors occurs during co-evaporation process. The balance of thin film growth among donor and acceptor molecules can be related to improved photovoltaic performance. The homogeneous blend structure leads to improvement of the power conversion efficiency from 1.2% to 3.0%.

  15. Growth of high-quality large-area MgB2 thin films by reactive evaporation

    International Nuclear Information System (INIS)

    Moeckly, B H; Ruby, W S

    2006-01-01

    We report a new in situ reactive deposition thin film growth technique for the production of MgB 2 thin films which offers several advantages over all existing methods and is the first deposition method to enable the production of high-quality MgB 2 films for real-world applications. We have used this growth method, which incorporates a rotating pocket heater, to deposit MgB 2 films on a variety of substrates, including single-crystalline, polycrystalline, metallic, and semiconductor materials up to 4 inch in diameter. This technique allows growth of double-sided, large-area films in the intermediate temperature range of 400-600 deg. C. These films are clean, well-connected, and consistently display T c values of 38-39 K with low resistivity and residual resistivity values. They are also robust and uncommonly stable upon exposure to atmosphere and water. (rapid communication)

  16. Effect of negative bias voltage on CrN films deposited by arc ion plating. I. Macroparticles filtration and film-growth characteristics

    International Nuclear Information System (INIS)

    Wang Qimin; Kim, Kwang Ho

    2008-01-01

    Chromium nitride (CrN) films were deposited on Si wafers by arc ion plating (AIP) at various negative bias voltages and several groups of N 2 /Ar gas flux ratios and chamber gas pressures. The authors systematically investigated the influence of negative bias voltage on the synthesis, composition, microstructure, and properties of the AIP CrN films. In this part (Part I), the investigations were mainly focused on the macroparticle distributions and film-growth characteristics. The results showed that macroparticle densities on the film surfaces decreased greatly by applying negative bias voltage, which can be affected by partial pressure of N 2 and Ar gases. From the statistical analysis of the experimental results, they proposed a new hybrid mechanism of ion bombardment and electrical repulsion. Also, the growth of the AIP CrN films was greatly altered by applying negative bias voltage. By increasing the bias voltage, the film surfaces became much smoother and the films evolved from apparent columnar microstructures to an equiaxed microstructure. The impinging high-energy Cr ions accelerated by negative bias voltages were deemed the inherent reason for the evolution of growth characteristics

  17. Amino acid and glucose metabolism in fed-batch CHO cell culture affects antibody production and glycosylation

    DEFF Research Database (Denmark)

    Fan, Yuzhou; Jimenez Del Val, Ioscani; Müller, Christian

    2015-01-01

    optimization, especially media optimization. Gaining knowledge on their interrelations could provide insight for obtaining higher immunoglobulin G (IgG) titer and better controlling glycosylationrelated product quality. In this work, different fed-batch processes with two chemically defined proprietary media......Fed-batch Chinese hamster ovary (CHO) cell culture is the most commonly used process for IgG production in the biopharmaceutical industry. Amino acid and glucose consumption, cell growth, metabolism, antibody titer, and N-glycosylation patterns are always the major concerns during upstream process...... and glutamine concentrations and uptake rates were positively correlated with intracellular UDP-Gal availability. All these findings are important for optimization of fed-batch culture for improving IgG production and directing glycosylation quality....

  18. Epitaxial thin film growth of LiH using a liquid-Li atomic template

    International Nuclear Information System (INIS)

    Oguchi, Hiroyuki; Ikeshoji, Tamio; Orimo, Shin-ichi; Ohsawa, Takeo; Shiraki, Susumu; Hitosugi, Taro; Kuwano, Hiroki

    2014-01-01

    We report on the synthesis of lithium hydride (LiH) epitaxial thin films through the hydrogenation of a Li melt, forming abrupt LiH/MgO interface. Experimental and first-principles molecular dynamics studies reveal a comprehensive microscopic picture of the crystallization processes, which sheds light on the fundamental atomistic growth processes that have remained unknown in the vapor-liquid-solid method. We found that the periodic structure that formed, because of the liquid-Li atoms at the film/MgO-substrate interface, serves as an atomic template for the epitaxial growth of LiH crystals. In contrast, films grown on the Al 2 O 3 substrates indicated polycrystalline films with a LiAlO 2 secondary phase. These results and the proposed growth process provide insights into the preparation of other alkaline metal hydride thin films on oxides. Further, our investigations open the way to explore fundamental physics and chemistry of metal hydrides including possible phenomena that emerge at the heterointerfaces of metal hydrides

  19. Growth and structure of thermally evaporated Bi{sub 2}Te{sub 3} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Rogacheva, E.I., E-mail: rogacheva@kpi.kharkov.ua [National Technical University “Kharkov Polytechnic Institute”, 21 Frunze St., Kharkov 61002 (Ukraine); Budnik, A.V. [National Technical University “Kharkov Polytechnic Institute”, 21 Frunze St., Kharkov 61002 (Ukraine); Dobrotvorskaya, M.V.; Fedorov, A.G.; Krivonogov, S.I.; Mateychenko, P.V. [Institute for Single Crystals of NAS of Ukraine, 60 Lenin Prospect, Kharkov 61001 (Ukraine); Nashchekina, O.N.; Sipatov, A.Yu. [National Technical University “Kharkov Polytechnic Institute”, 21 Frunze St., Kharkov 61002 (Ukraine)

    2016-08-01

    The growth mechanism, microstructure, and crystal structure of the polycrystalline n-Bi{sub 2}Te{sub 3} thin films with thicknesses d = 15–350 nm, prepared by thermal evaporation in vacuum onto glass substrates, were studied. Bismuth telluride with Te excess was used as the initial material for the thin film preparation. The thin film characterization was performed using X-ray diffraction, X-ray photoelectron spectroscopy, energy-dispersive X-ray spectroscopy, scan electron microscopy, and electron force microscopy. It was established that the chemical composition of the prepared films corresponded rather well to the starting material composition and the films did not contain any phases apart from Bi{sub 2}Te{sub 3}. It was shown that the grain size and the film roughness increased with increasing film thickness. The preferential growth direction changed from [00l] to [015] under increasing d. The X-ray photoelectron spectroscopy studies showed that the thickness of the oxidized surface layer did not exceed 1.5–2.0 nm and practically did not change in the process of aging at room temperature, which is in agreement with the results reported earlier for single crystals. The obtained data show that using simple and inexpensive method of thermal evaporation in vacuum and appropriate technological parameters, one can grow n-Bi{sub 2}Te{sub 3} thin films of a sufficiently high quality. - Highlights: • The polycrystalline n-Bi{sub 2}Te{sub 3} thin films were grown thermal evaporation onto glass. • The growth mechanism and film structure were studied by different structure methods. • The grain size and film roughness increased with increasing film thickness. • The growth direction changes from [00l] to [015] under film thickness increasing. • The oxidized layer thickness (1–2 nm) did not change under aging at room temperature.

  20. Visualization modeling of thin film growth in photodeposition processes

    Energy Technology Data Exchange (ETDEWEB)

    Mirchin, N.; Sidi, M.; Muchnik, Y.; Peled, A

    2003-03-15

    A computer visualization technique, which analyzes and predicts the spatio-temporal evolution of thin film deposition and growth processes is given. It relies on microscopy sampled or computer generated synthetic micrographs of particles. These are then simulated for deposition, aggregation and coagulation during thin film growth by frequency domain transform techniques. Particle sources and diffusion operators on surfaces are used to predict with high temporal resolution, unattained by real world microscopy the surface structure evolution as time samples and time movies. The simulation program was used to investigate deposition and diffusive profiles in photodeposition experiments, starting from initial synthetic micrographs based on real world scanning electron microscopy (SEM) images. The surface microstructure time 'tracking' scheme described here relies on transforming the original image of the deposited particles into a Fourier spatial frequency domain image. The physical models used are that of a material random deposition source and subsequent surface redistribution due to diffusion and other coalescence material surface flow mechanisms. The 2-D inverse Fourier transform (IFT) is finally used to obtain back the real space-time images representing the surface spatio-temporal films morphology changes. False color representation of the images allows for a better discrimination of the films growing details especially during the fast pre-compact thin film layer formation on the substrate.

  1. Modeling of Fusarium redolens Dzf2 mycelial growth kinetics and optimal fed-batch fermentation for beauvericin production.

    Science.gov (United States)

    Xu, Li-Jian; Liu, Yuan-Shuai; Zhou, Li-Gang; Wu, Jian-Yong

    2011-09-01

    Beauvericin (BEA) is a cyclic hexadepsipeptide mycotoxin with notable phytotoxic and insecticidal activities. Fusarium redolens Dzf2 is a highly BEA-producing fungus isolated from a medicinal plant. The aim of the current study was to develop a simple and valid kinetic model for F. redolens Dzf2 mycelial growth and the optimal fed-batch operation for efficient BEA production. A modified Monod model with substrate (glucose) and product (BEA) inhibition was constructed based on the culture characteristics of F. redolens Dzf2 mycelia in a liquid medium. Model parameters were derived by simulation of the experimental data from batch culture. The model fitted closely with the experimental data over 20-50 g l(-1) glucose concentration range in batch fermentation. The kinetic model together with the stoichiometric relationships for biomass, substrate and product was applied to predict the optimal feeding scheme for fed-batch fermentation, leading to 54% higher BEA yield (299 mg l(-1)) than in the batch culture (194 mg l(-1)). The modified Monod model incorporating substrate and product inhibition was proven adequate for describing the growth kinetics of F. redolens Dzf2 mycelial culture at suitable but not excessive initial glucose levels in batch and fed-batch cultures.

  2. Growth and Analysis of Highly Oriented (11n) BCSCO Films for Device Research

    Science.gov (United States)

    Raina, K. K.; Pandey, R. K.

    1995-01-01

    Films of BCSCO superconductor of the type Bi2CaSr2Cu2O(x), have been grown by liquid phase epitaxy method (LPE), using a partially closed growth chamber. The films were grown on (001) and (110) NdGaO3 substrates by slow cooling process in an optimized temperature range below the peritectic melting point (880 C) of Bi2CaSr2Cu2O8. Optimization of parameters, such as seed rotation, soak of initial growth temperature and growth period results in the formation of 2122 phase BCSCO films. The films grown at rotation rates of less than 30 and more than 70 rpm are observed to be associated with the second phase of Sr-Ca-Cu-O system. Higher growth temperatures (greater than 860 C) also encourage to the formation of this phase. XRD measurements show that the films grown on (110) NdGaO3 have a preferred (11n)-orientation. It is pertinent to mention here that in our earlier results published elsewhere we obtained c-axis oriented Bi2CaSr2Cu2O8 phase films on (001) NdGaO3 substrate. Critical current density is found to be higher for the films grown on (110) than (001) NdGaO3 substrate orientation. The best values, zero resistance (T(sab co)) and critical current density obtained are 87 K and 10(exp 5) A/sq cm respectively.

  3. Growth and analysis of highly oriented (11n) BCSCO films for device research

    International Nuclear Information System (INIS)

    Raina, K.K.; Pandey, R.K.

    1994-01-01

    Films of BCSCO superconductor of the type Bi 2 CaSr 2 Cu 2 O x have been grown by liquid phase epitaxy method (LPE), using a partially closed growth chamber. The films were grown on (001) and (110) NdGaO 3 substrates by slow cooling process in an optimized temperature range below the peritectic melting point (880 degrees C) of Bi 2 CaSr 2 Cu 2 O 8 . Optimization of parameters, such as seed rotation, soak of initial growth temperature and growth period results in the formation of 2122 phase BCSCO films. The films grown at rotation rates of less than 30 and more than 70 rpm are observed to be associated with the second phase of Sr-Ca-Cu-O system. Higher growth temperatures (>860 degrees C) also encourage to the formation of this phase. XRD measurements show that the films grown on (110) NdGaO 3 have a preferred (11n)-orientation. It is pertinent to mention here that in our earlier results published elsewhere we obtained c-axis oriented Bi 2 CaSr 2 Cu 2 O 8 phase films on (001) NdGaO 3 substrate. Critical current density is found to be higher for the films grown on (110) than (001) NdGaO 3 substrate orientation. The best values of zero resistance (T co ) and critical current density obtained are 87 K and 10 5 A/cm 2 , respectively

  4. Morphology and growth behavior of O_2-free chemical bath deposited ZnS thin films

    International Nuclear Information System (INIS)

    Jet Meitzner, K.; Tillotson, Brock M.; Siedschlag, Amanda T.; Moore, Frederick G.; Kevan, Stephen D.; Richmond, Geraldine L.

    2015-01-01

    We investigate the role of reagent concentrations and ambient O_2 on the morphology and growth behavior of ZnS thin films grown with the chemical bath deposition method. We investigate the role of substrate on film morphology, and find significant differences between films deposited on SiO_2 versus Si. The films are also sensitive to dissolved O_2 in the bath, as it causes a layer of SiO_2 to form at the ZnS/Si interface during deposition. Degassing of solutions and an N_2 atmosphere are effective to minimize this oxidation, allowing deposition of ZnS films directly onto Si. Under these conditions, we examine film properties as they relate to reagent bath concentrations. As the reagent concentrations are decreased, both the film roughness and growth rate decrease linearly. We also observe deformation and shifting of X-ray diffraction peaks that increases with decreasing reagent concentrations. The shifts are characteristic of lattice compression (caused by the substitution of oxygen for sulfur), and the deformation is characteristic of distortion of the lattice near crystal grain interfaces (caused by tensile stress from interatomic forces between neighboring crystal grains). At the weakest concentrations, the low roughness suggests a mixed growth mode in which both clusters and individual ZnS nanocrystallites contribute to film growth. With increasing reagent concentrations, the growth mode shifts and becomes dominated by deposition of clusters. - Highlights: • We deposit ZnS thin films by chemical bath deposition in an O_2-free environment. • The O_2-free environment is effective to minimize oxidation of the Si substrate. • The dominant growth mechanism changes with reagent concentrations. • Film morphology and composition change with reagent concentrations. • X-ray diffraction reveals tensile stress between ZnS crystal grains.

  5. Edge colouring by total labellings

    DEFF Research Database (Denmark)

    Brandt, Stephan; Rautenbach, D.; Stiebitz, M.

    2010-01-01

    We introduce the concept of an edge-colouring total k-labelling. This is a labelling of the vertices and the edges of a graph G with labels 1, 2, ..., k such that the weights of the edges define a proper edge colouring of G. Here the weight of an edge is the sum of its label and the labels of its...

  6. Growth of high quality large area MgB2 thin films by reactive evaporation

    OpenAIRE

    Moeckly, Brian H.; Ruby, Ward S.

    2006-01-01

    We report a new in-situ reactive deposition thin film growth technique for the production of MgB2 thin films which offers several advantages over all existing methods and is the first deposition method to enable the production of high-quality MgB2 films for real-world applications. We have used this growth method, which incorporates a rotating pocket heater, to deposit MgB2 films on a variety of substrates, including single-crystalline, polycrystalline, metallic, and semiconductor materials u...

  7. Effects of thermal treatment on the anodic growth of tungsten oxide films

    Energy Technology Data Exchange (ETDEWEB)

    Chai, Y., E-mail: yqchai85@gmail.com; Tam, C.W.; Beh, K.P.; Yam, F.K.; Hassan, Z.

    2015-08-03

    This work reports the investigation of the effects of thermal treatment on anodic growth tungsten oxide (WO{sub 3}). The increase of the thermal treatment temperature above 400 °C significantly influences WO{sub 3} film where high porosity structure reduces to more compact film. As-grown film is amorphous, which transforms to monoclinic/orthorhombic phase upon annealing at 300–600 °C. With the reducing of porous structure, preferential growth of (002) plane shifts to (020) plane at 600 °C with more than twentyfold increase of peak's intensity compared to the film annealed at 500 °C. Films annealed at low thermal treatment show better ion intercalation and reversibility during electrochemical measurements; however, it has larger optical band gap. Photoelectrochemical measurement reveals that film annealed at 400 °C exhibits the best photocatalytic performance among the films annealed at 300–600 °C. - Highlights: • Porosity of the WO{sub 3} reduces as annealing temperature increases above 400 °C. • As-grown film is amorphous which transforms to monoclinic/orthorhombic upon annealing. • As-grown film shows better ion intercalation in electrochemical process. • Optical band gap of WO{sub 3} reduces as the annealing temperature increases. • Film annealed at 400 °C exhibits best photocatalytic performance.

  8. Reliability growth of thin film resistors contact

    Directory of Open Access Journals (Sweden)

    Lugin A. N.

    2010-10-01

    Full Text Available Necessity of resistive layer growth under the contact and in the contact zone of resistive element is shown in order to reduce peak values of current flow and power dissipation in the contact of thin film resistor, thereby to increase the resistor stability to parametric and catastrophic failures.

  9. Surface structure deduced differences of copper foil and film for graphene CVD growth

    Energy Technology Data Exchange (ETDEWEB)

    Tian, Junjun [School of Chemistry and Chemical Engineering, Chongqing University, Chongqing 400044 (China); Hu, Baoshan, E-mail: hubaoshan@cqu.edu.cn [School of Chemistry and Chemical Engineering, Chongqing University, Chongqing 400044 (China); Wei, Zidong; Jin, Yan [School of Chemistry and Chemical Engineering, Chongqing University, Chongqing 400044 (China); Luo, Zhengtang [Department of Chemical and Biomolecular Engineering, The Hongkong University of Science and Technology, Kowloon (Hong Kong); Xia, Meirong [School of Chemistry and Chemical Engineering, Chongqing University, Chongqing 400044 (China); Pan, Qingjiang [Key Laboratory of Functional Inorganic Material Chemistry, Ministry of Education, Heilongjiang University, Harbin 150080 (China); Liu, Yunling [State Key Laboratory of Inorganic Synthesis and Preparative Chemistry, College of Chemistry, Jilin University, Changchun 130012 (China)

    2014-05-01

    Highlights: • We demonstrate the significant differences between Cu foil and film in the surface morphology and crystal orientation distribution. • The different surface structure leads to the distinctive influences of the CH₄ and H₂ concentrations on the thickness and quality of as-grown graphene. • Nucleation densities and growth rate differences at the initial growth stages on the Cu foil and film were investigated and discussed. Abstract: Graphene was synthesized on Cu foil and film by atmospheric pressure chemical vapor deposition (CVD) with CH₄ as carbon source. Electron backscattered scattering diffraction (EBSD) characterization demonstrates that the Cu foil surface after the H₂-assisted pre-annealing was almost composed of Cu(1 0 0) crystal facet with larger grain size of ~100 μm; meanwhile, the Cu film surface involved a variety of crystal facets of Cu(1 1 1), Cu(1 0 0), and Cu(1 1 0), with the relatively small grain size of ~10 μm. The different surface structure led to the distinctive influences of the CH₄ and H₂ concentrations on the thickness and quality of as-grown graphene. Further data demonstrate that the Cu foil enabled more nucleation densities and faster growth rates at the initial growth stages than the Cu film. Our results are beneficial for understanding the relationship between the metal surface structure and graphene CVD growth.

  10. TTF/TCNQ-based thin films and microcrystals. Growth and charge transport phenomena

    Energy Technology Data Exchange (ETDEWEB)

    Solovyeva, Vita

    2011-05-26

    The thesis adresses several problems related to growth and charge transport phenomena in thin films of TTF-TCNQ and (BEDT-TTF)TCNQ. The following main new problems are addressed: - The influence of thin-film specific factors, such as the substrate material and growth-induced defects, on the Peierls transition temperature in TTF-TCNQ thin films was studied; - finite-size effects in TTF-TCNQ were investigated by considering transport properties in TTF-TCNQ microcrystals. The influence of the size of the crystal on the Peierls transition temperature was studied. In this context a new method of microcontact fabrication was employed to favor the measurements; - an analysis of radiation-induced defects in TTF-TCNQ thin films and microcrystals was performed. It was demonstrated than an electron beam can induce appreciable damage to the sample such that its electronic properties are strongly modified; - a bilayer growth method was established to fabricate (BEDT-TTF)TCNQ from the gas phase. This newly developed bilayer growth method was showed to be suitable for testing (BEDT-TTF)TCNQ charge-transfer phase formation; - the structure of the formed (BEDT-TTF)TCNQ charge-transfer compounds was analyzed by using a wide range of experimental techniques. An overview and the description of the basic physical principles underlying charge-transfer compounds is given in chapter 2. Experimental techniques used for the growth and characterization of thin films and microcrystals are presented in chapter 3. Chapter 4 gives an overview of the physical properties of the studied organic materials. Chapter 5 discussed the experimental study of TTF-TCNQ thin films. he Peierls transition in TTF-TCNQ is a consequence of the quasi-one-dimensional structure of the material and depends on different factors, studied in chapters 5 and 6. In contradistinction to TTF-TTCNQ, the (BEDT-TTF)TCNQ charge-transfer compound crystallizes in several different modifications with different physical properties

  11. Effect of enhanced C2 growth chemistry on nanodiamond film deposition

    International Nuclear Information System (INIS)

    Teii, Kungen; Ikeda, Tomohiro

    2007-01-01

    A route to high-purity nanocrystalline diamond films from C 2 dimers and related mechanisms have been investigated by enhancing C 2 growth chemistry in Ar-rich microwave plasmas. Efficient C 2 production by direct dissociation from acetylene causes the micro- to nanocrystal transition with a low threshold Ar concentration of ∼70% and produces films of ∼20 nm grains with a distinct visible-Raman peak of diamond. C 2 grows nanodiamond on diamond surfaces but rarely initiates nucleation on foreign surfaces. The phase purity can be improved by increasing the dominance of nanodiamond growth from C 2 over nondiamond growth from CH x (x=0-3) and large radicals

  12. Molecular dynamics simulation about porous thin-film growth in secondary deposition

    International Nuclear Information System (INIS)

    Chen Huawei; Tieu, A. Kiet; Liu Qiang; Hagiwara, Ichiro; Lu Cheng

    2007-01-01

    The thin film growth has been confirmed to be assembled by an enormous number of clusters in experiments of CVD. Sequence of clusters' depositions proceeds to form the thin film at short time as gas fluids through surface of substrate. In order to grow condensed thin film using series of cluster deposition, the effect of initial velocity, substrate temperature and density of clusters on property of deposited thin film, especially appearance of nanoscale pores inside thin film must be investigated. In this simulation, three different cluster sizes of 203, 653, 1563 atoms with different velocities (0, 10, 100, 1000 and 3000 m/s) were deposited on a Cu(0 0 1) substrate whose temperatures were set between 300 and 1000 K. Four clusters and one cluster were used in primary deposition and secondary deposition, respectively. We have clarified that adhesion between clusters and substrate is greatly influenced by initial velocity. As a result, the exfoliation pattern of deposited thin film is dependent on initial velocity and different between them. One borderline dividing whole region into porous region and nonporous region are obtained to show the effect of growth conditions on appearance of nanoscale pores inside thin film. Moreover, we have also shown that the likelihood of porous thin film is dependent on the point of impact of a cluster relative to previously deposited clusters

  13. Molecular dynamics simulation about porous thin-film growth in secondary deposition

    Energy Technology Data Exchange (ETDEWEB)

    Chen Huawei [School of Mechanical Engineering and Automation, Beihang University, No. 37 Xuyuan Road, Haidian District, Beijing (China) and Mechanical Materials and Mechatronic Engineering, University of Wollongong, Northfields Avenue, NSW 2522 (Australia)]. E-mail: chen_hua_wei@yahoo.com; Tieu, A. Kiet [Mechanical Materials and Mechatronic Engineering, University of Wollongong, Northfields Avenue, NSW 2522 (Australia); Liu Qiang [School of Mechanical Engineering and Automation, Beihang University, No. 37 Xuyuan Road, Haidian District, Beijing (China); Hagiwara, Ichiro [Department of Mechanical Sciences and Engineering, Graduate School of Science and Engineering, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo (Japan); Lu Cheng [Mechanical Materials and Mechatronic Engineering, University of Wollongong, Northfields Avenue, NSW 2522 (Australia)

    2007-07-15

    The thin film growth has been confirmed to be assembled by an enormous number of clusters in experiments of CVD. Sequence of clusters' depositions proceeds to form the thin film at short time as gas fluids through surface of substrate. In order to grow condensed thin film using series of cluster deposition, the effect of initial velocity, substrate temperature and density of clusters on property of deposited thin film, especially appearance of nanoscale pores inside thin film must be investigated. In this simulation, three different cluster sizes of 203, 653, 1563 atoms with different velocities (0, 10, 100, 1000 and 3000 m/s) were deposited on a Cu(0 0 1) substrate whose temperatures were set between 300 and 1000 K. Four clusters and one cluster were used in primary deposition and secondary deposition, respectively. We have clarified that adhesion between clusters and substrate is greatly influenced by initial velocity. As a result, the exfoliation pattern of deposited thin film is dependent on initial velocity and different between them. One borderline dividing whole region into porous region and nonporous region are obtained to show the effect of growth conditions on appearance of nanoscale pores inside thin film. Moreover, we have also shown that the likelihood of porous thin film is dependent on the point of impact of a cluster relative to previously deposited clusters.

  14. Growth of HfO{sub x} thin films by reactive molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Hildebrandt, Erwin; Kurian, Jose; Alff, Lambert [Institut fuer Materialwissenschaft, TU Darmstadt (Germany)

    2008-07-01

    Thin films of hafnium oxide were grown on single crystal r-cut and c-cut sapphire by reactive molecular beam epitaxy. The conditions for the growth of single oriented hafnium oxide thin films have been established. Hafnium oxide thin films were characterized by X-ray diffraction and optical absorption measurements. It was found that hafnium oxide thin films grown on r-cut sapphire were (00l) oriented whereas, on c-cut sapphire, hafnium oxide films showed different orientations depending on the growth temperature and oxidation conditions. The hafnium oxide films grown at higher temperature and under strong oxidation conditions yielded (001) oriented films on c-cut sapphire whereas slightly weaker oxidation condition leads to (111) oriented hafnium oxide films. The bandgap deducted from optical absorption measurement carried out on hafnium oxide films grown under optimized conditions agreed well with the values reported in literature. A range of oxygen deficient thin films of hafnium oxide were also grown on single crystal sapphire substrates in order to investigate the effect of oxygen vacancies on dielectric properties of hafnium oxide. The oxygen deficient thin films of hafnium oxide show a decrease in bandgap with increase in oxygen deficiency.

  15. COMPENSATORY GROWTH IN MOZAMBIQUE TILAPIA (Oreochromis mossambicus, FED A SUB-OPTIMAL DIET

    Directory of Open Access Journals (Sweden)

    Ewen McLean

    1998-04-01

    Full Text Available Mozambique tilapia, Oreochromis mossambicus, held in 30%o seawater and at 29-30 °C, were divided into four groups (n = 50/group in replicate, and given one of four feed cycles: 1 control, with continuous feedind, 2 5:5, 3 10:10 and 4 15:15, wherein fish were subjected to starvation and subsequent refeeding cycles of 5, 10 and 15 days respectively. All animals were fed a commercial diet containing 18.4% protein, 6.7% lipid, 58.6% carbohydrate and 7.2% ash, over a 60 day trial period. Growth compensation was observed in the feed cycled groups as increased (P < 0.03 weight specific growth rates during refeeding. However, feed cycled groups were unable to achieve the weghts of control fish. Starvation reduced (P<0.01 haematocrit values when compared to control levels and, in the 15:15 cycled groups, elevated the testicular index (P < 0.02. The results are considered with respect to the commercial application of compensatory growth during production of tilapia.

  16. Nanoscale and submicron fatigue crack growth in nickel microbeams

    International Nuclear Information System (INIS)

    Yang, Y.; Yao, N.; Imasogie, B.; Soboyejo, W.O.

    2007-01-01

    This paper presents a novel edge-notched microbeam technique for the study of short fatigue crack growth. The technique is used to study submicron and nanoscale fatigue in LIGA Ni thin films with columnar microstructures. The edge-notched microbeams were fabricated within LIGA Ni thin films, using focused ion beam (FIB) techniques. The microbeams were then cyclically deformed to failure at a stress ratio of 0.1. Different slip-band structures were observed below the nanoscale notches. Cyclic deformation resulted in the formation of primary slip bands below the notch. Subsequent crack growth then occurred by the unzipping of fatigue cracks along intersecting slip bands. The effects of the primary slip bands were idealized using dislocation-based models. These were used to estimate the intrinsic fatigue threshold and the fatigue endurance limit. The estimates from the model are shown to be consistent with experimental data from prior stress-life experiments and current/prior fatigue threshold estimates

  17. Magnesium growth in magnesium deuteride thin films during deuterium desorption

    Energy Technology Data Exchange (ETDEWEB)

    Checchetto, R., E-mail: riccardo.checchetto@unitn.it [Dipartimento di Fisica and CNISM, Università di Trento, Via Sommarive 14, I-38123 Trento (Italy); Miotello, A. [Dipartimento di Fisica and CNISM, Università di Trento, Via Sommarive 14, I-38123 Trento (Italy); Mengucci, P.; Barucca, G. [Dipartimento di Fisica e Ingegneria dei Materiali e del Territorio, Università Politecnica delle Marche, I-60131 Ancona (Italy)

    2013-12-15

    Highlights: ► Highly oriented Pd-capped magnesium deuteride thin films. ► The MgD{sub 2} dissociation was studied at temperatures not exceeding 100 °C. ► The structure of the film samples was analyzed by XRD and TEM. ► The transformation is controlled by the re-growth velocity of the Mg layers. ► The transformation is thermally activated, activation energy value of 1.3 ± 0.1 eV. -- Abstract: Pd- capped nanocrystalline magnesium thin films having columnar structure were deposited on Si substrate by e-gun deposition and submitted to thermal annealing in D{sub 2} atmosphere to promote the metal to deuteride phase transformation. The kinetics of the reverse deuteride to metal transformation was studied by Thermal Desorption Spectroscopy (TDS) while the structure of the as deposited and transformed samples was analyzed by X-rays diffraction and Transmission Electron Microscopy (TEM). In Pd- capped MgD{sub 2} thin films the deuteride to metal transformation begins at the interface between un-reacted Mg and transformed MgD{sub 2} layers. The D{sub 2} desorption kinetics is controlled by MgD{sub 2}/Mg interface effects, specifically the re-growth velocity of the Mg layers. The Mg re-growth has thermally activated character and shows an activation energy value of 1.3 ± 0.1 eV.

  18. An XPS study of pulsed plasma polymerised allyl alcohol film growth on polyurethane

    Energy Technology Data Exchange (ETDEWEB)

    Watkins, Lucy [Department of Chemistry, University of York, Heslington, York YO10 5DD (United Kingdom); Bismarck, Alexander [Department of Chemical Engineering, Polymer and Composite Engineering (PaCE) Group, Imperial College London, London SW7 2AZ (United Kingdom); Lee, Adam F. [Department of Chemistry, University of York, Heslington, York YO10 5DD (United Kingdom); Wilson, Darren [Smith and Nephew Research Centre, York Science Park, Heslington, York YO10 5DF (United Kingdom); Wilson, Karen [Department of Chemistry, University of York, Heslington, York YO10 5DD (United Kingdom)]. E-mail: kw13@york.ac.uk

    2006-09-30

    The growth of highly functionalised poly allyl alcohol films by pulsed plasma polymerisation of CH{sub 2} =CHCH{sub 2}OH on biomedical grade polyurethane has been followed by X-ray photoelectron spectroscopy (XPS) and contact angle measurements. Film thickness is observed to increase approximately linearly with plasma modification time, suggesting a layer-by-layer growth mode of poly allyl alcohol. Water contact angle measurements reveal the change in the surface free energy of wetting decreases linearly with plasma modification up to the monolayer point after which a constant limiting value of -24 mJ m{sup -2} was attained. Films prepared at 20 W plasma power with a duty cycle of 10 {mu}s:500 {mu}s exhibit a high degree of hydroxyl (-OH) retention with minimal fragmentation of the monomer observed. Increasing the plasma power up to 125 W is found to improve -OH retention at the expense of ether formation generating films close to the monomer stoichiometry. Duty cycle plays an important role in controlling both film composition and thickness, with longer off times increasing -OH retention, while longer on times enhance allyl alcohol film growth.

  19. Growth and magnetic structure of La0.67Sr0.33MnO3 films

    International Nuclear Information System (INIS)

    Brown, G.W.; Jia, Q.X.; Peterson, E.J.; Hristova, D.K.; Hundley, M.F.; Thompson, J.D.; Maggiore, C.J.; Tesmer, J.; Hawley, M.E.

    1997-01-01

    Growth of LaMnO 3 films that exhibit colossal magnetoresistance (CMR) has concentrated heavily on Ca doped materials. However, since the 33% Sr doped films are ferromagnetic at room temperature, they are ideal candidates for dual growth-magnetic structure studies using scanned probe techniques. In this study, interest was focused on the relations between growth/processing parameters, film morphology, and electronic/magnetic properties. In addition, films were grown on both LaAlO 3 (LAO) and SrTiO 3 (STO) to examine the results of stress induced by different substrate mismatches. La 0.67 Sr 0.33 MnO 3 (LSMO) was grown using pulsed laser deposition (PLD) at temperatures between 500 C and 800 C. The film microstructure, crystallinity, and magnetic and electrical properties were characterized by room temperature scanning tunneling microscopy (STM), atomic force microscopy (AFM), magnetic force microscopy (MFM), x-ray diffraction, and temperature dependent transport and magnetization measurements. The growth trends follow those previously reported for Ca doped films. Grains increase in size with increasing temperature and coalesce into extended layers after annealing. Although topographic contributions complicate interpretation of some MFM data, local magnetic structure observed here is generally associated with film defects

  20. Controlling growth rate anisotropy for formation of continuous ZnO thin films from seeded substrates

    International Nuclear Information System (INIS)

    Zhang, R H; Slamovich, E B; Handwerker, C A

    2013-01-01

    Solution-processed zinc oxide (ZnO) thin films are promising candidates for low-temperature-processable active layers in transparent thin film electronics. In this study, control of growth rate anisotropy using ZnO nanoparticle seeds, capping ions, and pH adjustment leads to a low-temperature (90 ° C) hydrothermal process for transparent and high-density ZnO thin films. The common 1D ZnO nanorod array was grown into a 2D continuous polycrystalline film using a short-time pure solution method. Growth rate anisotropy of ZnO crystals and the film morphology were tuned by varying the chloride (Cl − ) ion concentration and the initial pH of solutions of zinc nitrate and hexamethylenetetramine (HMTA), and the competitive adsorption effects of Cl − ions and HMTA ligands on the anisotropic growth behavior of ZnO crystals were proposed. The lateral growth of nanorods constituting the film was promoted by lowering the solution pH to accelerate the hydrolysis of HMTA, thereby allowing the adsorption effects from Cl − to dominate. By optimizing the growth conditions, a dense ∼100 nm thickness film was fabricated in 15 min from a solution of [Cl − ]/[Zn 2+ ] = 1.5 and pH= 4.8 ± 0.1. This film shows >80% optical transmittance and a field-effect mobility of 2.730 cm 2 V −1 s −1 at zero back-gate bias. (paper)

  1. Epitaxial strain relaxation by provoking edge dislocation dipoles

    Science.gov (United States)

    Soufi, A.; El-Hami, K.

    2018-02-01

    Thin solid films have been used in various devices and engineering systems such as rapid development of highly integrated electronic circuits, the use of surface coatings to protect structural materials in high temperature environments, and thin films are integral parts of many micro-electro-mechanical systems designed to serve as sensors, actuators. Among techniques of ultra-thin films deposition, the heteroepitaxial method becomes the most useful at nanoscale level to obtain performed materials in various applications areas. On the other hand, stresses that appeared during the elaboration of thin films could rise deformations and fractures in materials. The key solution to solve this problem at the nanoscale level is the nucleation of interface dislocations from free surfaces. By provoking edge dislocation dipoles we obtained a strain relaxation in thin films. Moreover, the dynamic of nucleation in edge dislocations from free lateral surfaces was also studied.

  2. Chemical structural analysis of diamondlike carbon films: I. Surface growth model

    Science.gov (United States)

    Takabayashi, Susumu; Ješko, Radek; Shinohara, Masanori; Hayashi, Hiroyuki; Sugimoto, Rintaro; Ogawa, Shuichi; Takakuwa, Yuji

    2018-02-01

    The surface growth mechanisms of diamondlike carbon (DLC) films has been clarified. DLC films were synthesized in atmospheres with a fixed methane-to-argon ratio at different temperatures up to 700 °C by the photoemission-assisted glow discharge of photoemission-assisted plasma-enhanced chemical vapor deposition. The electrical resistivity of the films decreased logarithmically as the synthesis temperature was increased. Conversely, the dielectric constant of the films increased and became divergent at high temperature. However, the very high electrical resistivity of the film synthesized at 150 °C was retained even after post-annealing treatments at temperatures up to 500 °C, and divergence of the dielectric constant was not observed. Such films exhibited excellent thermal stability and retained large amounts of hydrogen, even after post-annealing treatments. These results suggest that numerous hydrogen atoms were incorporated into the DLC films during synthesis at low temperatures. Hydrogen atoms terminate carbon dangling bonds in the films to restrict π-conjugated growth. During synthesis at high temperature, hydrogen was desorbed from the interior of the growing films and π-conjugated conductive films were formed. Moreover, hydrogen radicals were chemisorbed by carbon atoms at the growing DLC surface, leading to removal of carbon atoms from the surface as methane gas. The methane molecules decomposed into hydrocarbons and hydrogen radicals through the attack of electrons above the surface. Hydrogen radicals contributed to the etching reaction cycle of the film; the hydrocarbon radicals were polymerized by reacting with other radicals and the methane source. The polymer radicals remained above the film, preventing the supply of the methane source and disrupting the action of argon ions. At high temperatures, the resultant DLC films were rough and thin.

  3. Growth and analysis of highly oriented (11n) BCSCO films for device research

    Energy Technology Data Exchange (ETDEWEB)

    Raina, K.K.; Pandey, R.K. [Texas A& M Univ., College Station, TX (United States)

    1994-12-31

    Films of BCSCO superconductor of the type Bi{sub 2}CaSr{sub 2}Cu{sub 2}O{sub x} have been grown by liquid phase epitaxy method (LPE), using a partially closed growth chamber. The films were grown on (001) and (110) NdGaO{sub 3} substrates by slow cooling process in an optimized temperature range below the peritectic melting point (880{degrees}C) of Bi{sub 2}CaSr{sub 2}Cu{sub 2}O{sub 8}. Optimization of parameters, such as seed rotation, soak of initial growth temperature and growth period results in the formation of 2122 phase BCSCO films. The films grown at rotation rates of less than 30 and more than 70 rpm are observed to be associated with the second phase of Sr-Ca-Cu-O system. Higher growth temperatures (>860{degrees}C) also encourage to the formation of this phase. XRD measurements show that the films grown on (110) NdGaO{sub 3} have a preferred (11n)-orientation. It is pertinent to mention here that in our earlier results published elsewhere we obtained c-axis oriented Bi{sub 2}CaSr{sub 2}Cu{sub 2}O{sub 8} phase films on (001) NdGaO{sub 3} substrate. Critical current density is found to be higher for the films grown on (110) than (001) NdGaO{sub 3} substrate orientation. The best values of zero resistance (T{sub co}) and critical current density obtained are 87 K and 10{sup 5} A/cm{sup 2}, respectively.

  4. Big-data reflection high energy electron diffraction analysis for understanding epitaxial film growth processes.

    Science.gov (United States)

    Vasudevan, Rama K; Tselev, Alexander; Baddorf, Arthur P; Kalinin, Sergei V

    2014-10-28

    Reflection high energy electron diffraction (RHEED) has by now become a standard tool for in situ monitoring of film growth by pulsed laser deposition and molecular beam epitaxy. Yet despite the widespread adoption and wealth of information in RHEED images, most applications are limited to observing intensity oscillations of the specular spot, and much additional information on growth is discarded. With ease of data acquisition and increased computation speeds, statistical methods to rapidly mine the data set are now feasible. Here, we develop such an approach to the analysis of the fundamental growth processes through multivariate statistical analysis of a RHEED image sequence. This approach is illustrated for growth of La(x)Ca(1-x)MnO(3) films grown on etched (001) SrTiO(3) substrates, but is universal. The multivariate methods including principal component analysis and k-means clustering provide insight into the relevant behaviors, the timing and nature of a disordered to ordered growth change, and highlight statistically significant patterns. Fourier analysis yields the harmonic components of the signal and allows separation of the relevant components and baselines, isolating the asymmetric nature of the step density function and the transmission spots from the imperfect layer-by-layer (LBL) growth. These studies show the promise of big data approaches to obtaining more insight into film properties during and after epitaxial film growth. Furthermore, these studies open the pathway to use forward prediction methods to potentially allow significantly more control over growth process and hence final film quality.

  5. Epitaxial thin film growth of LiH using a liquid-Li atomic template

    Energy Technology Data Exchange (ETDEWEB)

    Oguchi, Hiroyuki, E-mail: oguchi@nanosys.mech.tohoku.ac.jp [Department of Nanomechanics, Tohoku University, Sendai 980-8579 (Japan); Micro System Integration Center (muSIC), Tohoku University, Sendai 980-0845 (Japan); Ikeshoji, Tamio; Orimo, Shin-ichi [Institute for Materials Research, Tohoku University, Sendai 980-8577 (Japan); Advanced Institute for Materials Research (AIMR), Tohoku University, Sendai 980-8577 (Japan); Ohsawa, Takeo; Shiraki, Susumu; Hitosugi, Taro [Advanced Institute for Materials Research (AIMR), Tohoku University, Sendai 980-8577 (Japan); Kuwano, Hiroki [Department of Nanomechanics, Tohoku University, Sendai 980-8579 (Japan)

    2014-11-24

    We report on the synthesis of lithium hydride (LiH) epitaxial thin films through the hydrogenation of a Li melt, forming abrupt LiH/MgO interface. Experimental and first-principles molecular dynamics studies reveal a comprehensive microscopic picture of the crystallization processes, which sheds light on the fundamental atomistic growth processes that have remained unknown in the vapor-liquid-solid method. We found that the periodic structure that formed, because of the liquid-Li atoms at the film/MgO-substrate interface, serves as an atomic template for the epitaxial growth of LiH crystals. In contrast, films grown on the Al{sub 2}O{sub 3} substrates indicated polycrystalline films with a LiAlO{sub 2} secondary phase. These results and the proposed growth process provide insights into the preparation of other alkaline metal hydride thin films on oxides. Further, our investigations open the way to explore fundamental physics and chemistry of metal hydrides including possible phenomena that emerge at the heterointerfaces of metal hydrides.

  6. Decoding Nucleation and Growth of Zeolitic Imidazolate Framework Thin Films with Atomic Force Microscopy and Vibrational Spectroscopy.

    Science.gov (United States)

    Öztürk, Zafer; Filez, Matthias; Weckhuysen, Bert M

    2017-08-10

    The synthesis of metal-organic framework (MOF) thin films has garnered significant attention during the past decade. By better understanding the parameters governing the nucleation and growth of such thin films, their properties can be rationally tuned, empowering their application as (reactive) membranes. Here, a combined AFM-vibrational spectroscopy research strategy is employed to detail the chemistries governing the nucleation and growth of zeolitic imidazolate framework (ZIF) thin films, in particular isostructural Co-ZIF-67 and Zn-ZIF-8. First, a single step direct synthesis approach is used to investigate the influence of different synthesis parameters -metal/linker ratio, temperature, and metal type- on the thin film nucleation and growth behaviour. While the metal/linker ratio has a pronounced effect on the thin film nucleation rate, the temperature mainly influences the growth kinetics of nuclei forming the thin film. In addition, the nucleation and growth of ZIF thin films is shown to be highly dependent on the electronegativity of the metal type. Thin-film thickness control can be achieved by using a multistep synthesis strategy, implying repetitive applications of single step deposition under identical synthesis conditions, for which a growth mechanism is proposed. This study provides insight into the influence of synthesis parameters on the ZIF thin film properties, using tools at hand to rationally tune MOF thin film properties. © 2017 The Authors. Published by Wiley-VCH Verlag GmbH & Co. KGaA.

  7. Growth of vertically aligned ZnO nanorods using textured ZnO films

    Directory of Open Access Journals (Sweden)

    Meléndrez Manuel

    2011-01-01

    Full Text Available Abstract A hydrothermal method to grow vertical-aligned ZnO nanorod arrays on ZnO films obtained by atomic layer deposition (ALD is presented. The growth of ZnO nanorods is studied as function of the crystallographic orientation of the ZnO films deposited on silicon (100 substrates. Different thicknesses of ZnO films around 40 to 180 nm were obtained and characterized before carrying out the growth process by hydrothermal methods. A textured ZnO layer with preferential direction in the normal c-axes is formed on substrates by the decomposition of diethylzinc to provide nucleation sites for vertical nanorod growth. Crystallographic orientation of the ZnO nanorods and ZnO-ALD films was determined by X-ray diffraction analysis. Composition, morphologies, length, size, and diameter of the nanorods were studied using a scanning electron microscope and energy dispersed x-ray spectroscopy analyses. In this work, it is demonstrated that crystallinity of the ZnO-ALD films plays an important role in the vertical-aligned ZnO nanorod growth. The nanorod arrays synthesized in solution had a diameter, length, density, and orientation desirable for a potential application as photosensitive materials in the manufacture of semiconductor-polymer solar cells. PACS 61.46.Hk, Nanocrystals; 61.46.Km, Structure of nanowires and nanorods; 81.07.Gf, Nanowires; 81.15.Gh, Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.

  8. Growth of Cu thin films by the successive ionic layer adsorption and reaction (SILAR) method

    International Nuclear Information System (INIS)

    Lindroos, S.; Ruuskanen, T.; Ritala, M.; Leskelae, M.

    2004-01-01

    Copper thin films were grown on reduced indium tin oxide, molybdenum and polymer substrates using successive ionic layer adsorption and reaction (SILAR) method. Copper films were grown sequentially in a controlled way using simple copper salt and basic solution of formaldehyde as precursors. The copper films were polycrystalline with no preferred orientation as characterised by X-ray diffraction. On all substrates, the growth was clearly island growth in the beginning but after the whole surface was covered, the growth was more homogeneous

  9. Atomic Layer Control of Thin Film Growth Using Binary Reaction Sequence Chemistry

    National Research Council Canada - National Science Library

    George, Steven

    1997-01-01

    Our research is focusing on the atomic layer control of thin film growth. Our goal is to deposit films with precise control of thickness and conformality on both flat and high aspect ratio structures...

  10. Growth properties of poly(tetrafluoroethylene) films by synchrotron radiation ablation

    International Nuclear Information System (INIS)

    Guo, Qixin; Kugino, Takashi; Kume, Yusuke; Mitsuishi, Yoshiaki; Tanaka, Tooru; Nishi, Mitsuhiro; Ogawa, Hiroshi

    2007-01-01

    High-quality poly(tetrafluoroethylene) (PTFE) films have been grown on Si substrates by synchrotron radiation ablation of a PTFE target. Only doublet absorption structures assigned to C-F asymmetric and symmetric stretching vibrations in CF 2 groups are observed, suggesting that the CF 2 groups in the grown PTFE film are organized in an ordered manner through linear attachment. The growth rate of the PTFE films increases with increasing target temperature, while it decreases with increasing substrate temperature. It has been shown that the thickness of the PTFE film with a high-spatial-resolution structure can be easily controlled at nanometer order by changing the synchrotron radiation irradiation dose. (author)

  11. Growth and survival of Hippocampus erectus (Perry, 1810 juveniles fed on Artemia with different HUFA levels

    Directory of Open Access Journals (Sweden)

    Nicolás Vite-Garcia

    2014-03-01

    Full Text Available Survival during first months after birth is one of the bottlenecks for consolidating the seahorse farming industry. In this work, Artemia metanauplii enriched with two highly unsaturated fatty acids (HUFA rich commercial emulsions with different docosahexaenoic acid (DHA levels (63% and 14% of total lipids, a vegetable oil with no DHA, and non-enriched Artemia as control, were used to feed 5-day-old juvenile Hippocampus erectus for 60 days. Enriched Artemia had similar levels of DHA (13% and 9%, despite great differences of DHA in the emulsions, with traces of DHA in non-enriched and vegetable oil enriched Artemia. More than 20% of DHA was found in 24 h starved juveniles fed both DHA-enriched treatments, similar to values in newly born juveniles, but those fed vegetable oil enriched Artemia or non-enriched Artemia had 5% of DHA. Total lipid and protein levels were similar in juveniles from the four treatments. The n-3/n-6 ratio was almost four-fold higher in seahorses fed DHA-enriched treatments compared to juveniles fed the non-enriched treatments. Survival of seahorses only partially reflected the DHA levels: it was lower in the vegetable oil treatment, similar in the seahorses fed Artemia with higher DHA and in the control treatment, and higher in seahorses fed the HUFA-enriched Artemia with lower DHA levels, although growth was similar in the two DHA-enriched Artemia treatments. Juvenile H. erectus seahorses perform better when they have at least 20% of DHA in their tissues, and these levels can be attained with no more than 14% of DHA in emulsions, eliminating the need for more expensive emulsions with higher DHA levels.

  12. Defining the effect of sweep tillage tool cutting edge geometry on tillage forces using 3D discrete element modelling

    Directory of Open Access Journals (Sweden)

    Mustafa Ucgul

    2015-09-01

    Full Text Available The energy required for tillage processes accounts for a significant proportion of total energy used in crop production. In many tillage processes decreasing the draft and upward vertical forces is often desired for reduced fuel use and improved penetration, respectively. Recent studies have proved that the discrete element modelling (DEM can effectively be used to model the soil–tool interaction. In his study, Fielke (1994 [1] examined the effect of the various tool cutting edge geometries, namely; cutting edge height, length of underside rub, angle of underside clearance, on draft and vertical forces. In this paper the experimental parameters of Fielke (1994 [1] were simulated using 3D discrete element modelling techniques. In the simulations a hysteretic spring contact model integrated with a linear cohesion model that considers the plastic deformation behaviour of the soil hence provides better vertical force prediction was employed. DEM parameters were determined by comparing the experimental and simulation results of angle of repose and penetration tests. The results of the study showed that the simulation results of the soil-various tool cutting edge geometries agreed well with the experimental results of Fielke (1994 [1]. The modelling was then used to simulate a further range of cutting edge geometries to better define the effect of sweep tool cutting edge geometry parameters on tillage forces. The extra simulations were able to show that by using a sharper cutting edge with zero vertical cutting edge height the draft and upward vertical force were further reduced indicating there is benefit from having a really sharp cutting edge. The extra simulations also confirmed that the interpolated trends for angle of underside clearance as suggested by Fielke (1994 [1] where correct with a linear reduction in draft and upward vertical force for angle of underside clearance between the ranges of −25 and −5°, and between −5 and 0°. The

  13. Intrinsic Compressive Stress in Polycrystalline Films is Localized at Edges of the Grain Boundaries

    Science.gov (United States)

    Vasco, Enrique; Polop, Celia

    2017-12-01

    The intrinsic compression that arises in polycrystalline thin films under high atomic mobility conditions has been attributed to the insertion or trapping of adatoms inside grain boundaries. This compression is a consequence of the stress field resulting from imperfections in the solid and causes the thermomechanical fatigue that is estimated to be responsible for 90% of mechanical failures in current devices. We directly measure the local distribution of residual intrinsic stress in polycrystalline thin films on nanometer scales, using a pioneering method based on atomic force microscopy. Our results demonstrate that, at odds with expectations, compression is not generated inside grain boundaries but at the edges of gaps where the boundaries intercept the surface. We describe a model wherein this compressive stress is caused by Mullins-type surface diffusion towards the boundaries, generating a kinetic surface profile different from the mechanical equilibrium profile by the Laplace-Young equation. Where the curvatures of both profiles differ, an intrinsic stress is generated in the form of Laplace pressure. The Srolovitz-type surface diffusion that results from the stress counters the Mullins-type diffusion and stabilizes the kinetic surface profile, giving rise to a steady compression regime. The proposed mechanism of competition between surface diffusions would explain the flux and time dependency of compressive stress in polycrystalline thin films.

  14. Growth Performance of Pekin Ducks Fed with Golden Snail and Fresh Banana Peelings

    Directory of Open Access Journals (Sweden)

    Ulep, LJL.

    1995-01-01

    Full Text Available The growth performance and economics of feeding confined Pekin ducks with three different levels of golden snail fresh meat and banana peelings in equal percentage for replacing 50 %, 70 % or 90 % of the commercial feed of the diet was studied. Body weight gains and feed consumption of ducks, cost of feed and profit above feed and stock cost different significantly among treatments. Feed conversion varied during the first month of feeding but became comparable after the second month. Ducks fed the diet with 45 % banana peel and 45 % golden snail meat gave the best performance, were the most economical and yielded the highest profit. Snail meat and banana peeling utilization as replacement to commercial diet for ducks is advantageaous in terms of growth performance and cost benefit.

  15. Stoichiometry-, phase- and orientation-controlled growth of polycrystalline pyrite (FeS 2) thin films by MOCVD

    Science.gov (United States)

    Höpfner, C.; Ellmer, K.; Ennaoui, A.; Pettenkofer, C.; Fiechter, S.; Tributsch, H.

    1995-06-01

    The growth process of polycrystalline pyrite thin films employing low pressure metalorganic chemical vapor deposition (LP-MOCVD) in a vertical cold wall reactor has been investigated. Iron pentacarbonyl (IPC) and t-butyldisulfide (TBDS) were utilized as precursors. Study of the growth rate as a function of temperature reveals a kinetically controlled growth process with an activation energy of 73 kJ / mol over the temperature range from 250 to 400°C. From 500 to 630°C, the growth rate is mainly mass transport limited. Decomposition of the films into pyrrhotite (Fe 1 - xS) occurs at higher growth temperatures. The {S}/{Fe} ratio in the films has been controlled from 1.23 up to 2.03 by changing the TBDS partial pressure. With increasing deposition temperature, the crystallites in the films show the tendency to grow [100]-oriented on amorphous substrates at a growth rate of 2.5 Å / s. The grains show a preferential orientation in the [111] direction upon lowering the growth rate down to 0.3 Å / s. Temperatures above 550°C are beneficial in enhancing the grain size in the columnar structured films up to 1.0 μm.

  16. Weighted Scaling in Non-growth Random Networks

    International Nuclear Information System (INIS)

    Chen Guang; Yang Xuhua; Xu Xinli

    2012-01-01

    We propose a weighted model to explain the self-organizing formation of scale-free phenomenon in non-growth random networks. In this model, we use multiple-edges to represent the connections between vertices and define the weight of a multiple-edge as the total weights of all single-edges within it and the strength of a vertex as the sum of weights for those multiple-edges attached to it. The network evolves according to a vertex strength preferential selection mechanism. During the evolution process, the network always holds its total number of vertices and its total number of single-edges constantly. We show analytically and numerically that a network will form steady scale-free distributions with our model. The results show that a weighted non-growth random network can evolve into scale-free state. It is interesting that the network also obtains the character of an exponential edge weight distribution. Namely, coexistence of scale-free distribution and exponential distribution emerges.

  17. Modeling of thin films growth processes in the early stage for atoms with covalent bonds

    International Nuclear Information System (INIS)

    Tupik, V A; Margolin, V I; Su, Chu Trong

    2017-01-01

    Computer simulation for obtaining thin film’s growth process at an early stage with the proposed model of atoms with isotropic and anisotropic interactions been considered. Carrying out the procedure for analyzing the problem on the basis of the program being implemented, computer simulation of thin film growth processes has been carried out on several examples. The results of computer simulation of the growth process of thin film on a given substrate and an aggregate in a vacuum condition are shown. Some characteristic distributions of the obtained structure have been carried out to evaluate the proposed adequate model and to reflect the high complexity of thin films growth process. (paper)

  18. Substrate mediated growth of organic semiconducting thin films; Templateffekte bei der Strukturierung organischer Halbleiterfilme

    Energy Technology Data Exchange (ETDEWEB)

    Goetzen, Jan

    2010-09-17

    Since electronic properties of molecular materials are closely related to their structural order a precise control of the molecular packing and crystalline orientation of thin films is of vital interest for an optimization of organic electronic devices. Of particular interest in this respect is the initial stage of film formation which is largely governed by the interplay of intermolecular and molecule-substrate interactions. One approach to control the molecular film structure is based on substrate mediated growth. In this respect we have studied structural properties of thin films of pentacene, pentacene- 5,7,12,14-tetrone and perfluoro-pentacene which were grown onto various substrates including metals, metal oxides and graphite. On metal surfaces the molecules initially form a chemisorbed monolayer where molecules even can be uniformly aligned when using appropriate substrates with twofold symmetry. Further deposition, however, is accompanied by a pronounced dewetting and formation of disjoined islands which results from a large structural mismatch between the molecular arrangement in the monolayer and the crystalline phase. In some cases it is possible to orient such islands by utilizing step mediated nucleation and decoration of step bunches which allows the preparation of azimuthally well oriented elongated islands. On single crystalline oxides the growth parallels the situation found before for SiO{sub 2} where islands of upright oriented molecules are formed. The growth on graphite is somewhat particular since the lattice provides a natural template for acenes yielding epitaxially ordered monolayer films with planar adsorption geometry like in case of metals. Interestingly, however, no dewetting occurs upon further growth and instead rather smooth films are formed. The detailed analysis for the case of pentacene showed that the substrate-molecule interaction actually is weaker than the intermolecular interaction so that multilayer films can lift the

  19. Thin film evolution equations from (evaporating) dewetting liquid layers to epitaxial growth

    International Nuclear Information System (INIS)

    Thiele, U

    2010-01-01

    In the present contribution we review basic mathematical results for three physical systems involving self-organizing solid or liquid films at solid surfaces. The films may undergo a structuring process by dewetting, evaporation/condensation or epitaxial growth, respectively. We highlight similarities and differences of the three systems based on the observation that in certain limits all of them may be described using models of similar form, i.e. time evolution equations for the film thickness profile. Those equations represent gradient dynamics characterized by mobility functions and an underlying energy functional. Two basic steps of mathematical analysis are used to compare the different systems. First, we discuss the linear stability of homogeneous steady states, i.e. flat films, and second the systematics of non-trivial steady states, i.e. drop/hole states for dewetting films and quantum-dot states in epitaxial growth, respectively. Our aim is to illustrate that the underlying solution structure might be very complex as in the case of epitaxial growth but can be better understood when comparing the much simpler results for the dewetting liquid film. We furthermore show that the numerical continuation techniques employed can shed some light on this structure in a more convenient way than time-stepping methods. Finally we discuss that the usage of the employed general formulation does not only relate seemingly unrelated physical systems mathematically, but does allow as well for discussing model extensions in a more unified way.

  20. Controlling thin film structure for the dewetting of catalyst nanoparticle arrays for subsequent carbon nanofiber growth

    International Nuclear Information System (INIS)

    Randolph, S J; Fowlkes, J D; Melechko, A V; Klein, K L; III, H M Meyer; Simpson, M L; Rack, P D

    2007-01-01

    Vertically aligned carbon nanofiber (CNF) growth is a catalytic chemical vapor deposition process in which structure and functionality is controlled by the plasma conditions and the properties of the catalyst nanoparticles that template the fiber growth. We have found that the resultant catalyst nanoparticle network that forms by the dewetting of a continuous catalyst thin film is dependent on the initial properties of the thin film. Here we report the ability to tailor the crystallographic texture and composition of the nickel catalyst film and subsequently the nanoparticle template by varying the rf magnetron sputter deposition conditions. After sputtering the Ni catalyst thin films, the films are heated and exposed to an ammonia dc plasma, to chemically reduce the native oxide on the films and induce dewetting of the film to form nanoparticles. Subsequent nanoparticle treatment in an acetylene plasma at high substrate temperature results in CNF growth. Evidence is presented that the texture and composition of the nickel thin film has a significant impact on the structure and composition of the formed nanoparticle, as well as the resultant CNF morphology. Nickel films with a preferred (111) or (100) texture were produced and conditions favoring interfacial silicidation reactions were identified and investigated. Both compositional and structural analysis of the films and nanoparticles indicate that the properties of the as-deposited Ni catalyst film influences the subsequent nanoparticle formation and ultimately the catalytic growth of the carbon nanofibers

  1. Features of film growth during plasma anodizing of Al 2024/SiC metal matrix composite

    Energy Technology Data Exchange (ETDEWEB)

    Xue Wenbin [Key Laboratory for Radiation Beam Technology and Materials Modification, Institute of Low Energy Nuclear Physics, Beijing Normal University, Beijing 100875 (China)]. E-mail: xuewb@bnu.edu.cn

    2006-07-15

    Plasma anodizing is a novel promising process to fabricate corrosion-resistant protective films on metal matrix composites. The corrosion-resistant films were prepared by plasma anodizing on SiC reinforced aluminum matrix composite. The morphology and microstructure of films were analyzed by scanning electron microscopy. Specifically, the morphology of residual SiC reinforcement particles in the film was observed. It is found that the most SiC reinforcement particles have been molten to become silicon oxide, but a few tiny SiC particles still remain in the film close to the composite/film interface. This interface is irregular due to the hindering effect of SiC particles on the film growth. Morphology and distribution of residual SiC particles in film provide direct evidence to identify the local melt occurs in the interior of plasma anodizing film even near the composite/film interface. A model of film growth by plasma anodizing on metal matrix composites was proposed.

  2. Features of film growth during plasma anodizing of Al 2024/SiC metal matrix composite

    International Nuclear Information System (INIS)

    Xue Wenbin

    2006-01-01

    Plasma anodizing is a novel promising process to fabricate corrosion-resistant protective films on metal matrix composites. The corrosion-resistant films were prepared by plasma anodizing on SiC reinforced aluminum matrix composite. The morphology and microstructure of films were analyzed by scanning electron microscopy. Specifically, the morphology of residual SiC reinforcement particles in the film was observed. It is found that the most SiC reinforcement particles have been molten to become silicon oxide, but a few tiny SiC particles still remain in the film close to the composite/film interface. This interface is irregular due to the hindering effect of SiC particles on the film growth. Morphology and distribution of residual SiC particles in film provide direct evidence to identify the local melt occurs in the interior of plasma anodizing film even near the composite/film interface. A model of film growth by plasma anodizing on metal matrix composites was proposed

  3. Growth of fine holes in polyethyleneterephthalate film irradiated by fission fragments

    International Nuclear Information System (INIS)

    Komaki, Y.; Tsujimura, S.

    1975-01-01

    Growth of fine holes by chemical etching in polyethyleneterephthalate films exposed to fission fragments were followed by measuring gas flow through films. The etching rate along tracks and the radial etching rate were determined at hole diameters of 100--3000 A and hole densities of 10 6 --10 8 /cm 2

  4. Growth and morphology of aluminium contacts on P3HT films

    Energy Technology Data Exchange (ETDEWEB)

    Kaune, Gunar [TU Muenchen, Physik-Department, Lehrstuhl fuer Funktionelle Materialien, James-Franck-Strasse 1, 85747 Garching (Germany); Martin-Luther-Universitaet Halle-Wittenberg, Institut fuer Physik, Fachgruppe Photovoltaik, Von-Danckelmann-Platz 3, 06120 Halle (Germany); Meier, Robert; Metwalli, Ezzeldin; Koerstgens, Volker; Mueller-Buschbaum, Peter [TU Muenchen, Physik-Department, Lehrstuhl fuer Funktionelle Materialien, James-Franck-Strasse 1, 85747 Garching (Germany); Schlage, Kai; Couet, Sebastien; Roth, Stephan V. [HASYLAB, DESY, Notkestrasse 85, 22603 Hamburg (Germany)

    2011-07-01

    The characteristics of organic electronic devices are strongly influenced by the type and structure of the metal electrodes needed to inject or extract charge carriers. Therefore understanding of the metal growth process and its relation to the interactions at the metal-organic interface are necessary. We investigate the growth of an aluminium layer on the surface of a P3HT thin film by in-situ application of grazing incidence small-angle X-ray scattering (GISAXS). By subsequent modelling of the scattering data the structural parameters of the growing film are extracted and a growth process is found, which proceeds two-dimensional by stacking single atomic layers on top each other. This process results in a homogeneous film with a large contact area to the polymer and is explained by a strong chemical interaction between aluminium and P3HT, which suppresses clustering of the metal on the polymer surface. The diffusion of single aluminium atoms into the P3HT and the formation of an intermixing layer is revealed by X-ray reflectivity measurements.

  5. The edge of space time

    International Nuclear Information System (INIS)

    Hawking, S.

    1993-01-01

    What happened at the beginning of the expansion of the universe. Did space time have an edge at the Big Bang. The answer is that, if the boundary conditions of the universe are that it has no boundary, time ceases to be well-defined in the very early universe as the direction ''north'' ceases to be well defined at the North Pole of the Earth. The quantity that we measure as time has a beginning but that does not mean spacetime has an edge, just as the surface of the Earth does not have an edge at the North Pole. 8 figs

  6. Growth and feed efficiency of juvenile shrimp Litopenaeus vannamei fed formulated diets containing different levels of poultry by-product meal

    Science.gov (United States)

    Chi, Shuyan; Tan, Beiping; Mai, Kangsen; Zheng, Shixuan

    2009-12-01

    This feeding trial was conducted to evaluate the potential of poultry by-product meal (PBM) as a protein source in the culture of Litopenaeus vannamei. Seven isonitrogenous and isoenergetic diets were formulated to near to commercial diet with about 40% protein and 7.5% lipid. Fish meal was replaced by 0, 30%, 40%, 50%, 60%, 70% and 100% of PBM (diets 1-7). The diet with 100% fish meal was used as a control (diet 1). Post-larvae were reared in an indoor semi-closed re-circulating system. Each dietary treatment was tested in 4 replicate tanks (260 L) of 40 shrimp, arranged in a completely randomized design. The shrimps were hand-fed for three times a day to near-satiation (0700, 1200 and 1800) for 60 d. Percentage weight gain, survival, feed conversion ratio (FCR), protein efficiency ratio (PER) and body composition of shrimps were measured. There were no significant differences ( P>0.05) in growth performance among shrimps fed diets 1-5 (0-60% fish meal replacement). However, shrimps fed diet 7 (100% fish meal replacement) had significantly lower ( P0.05) among different experimental diets. No differences in body composition were found among shrimps fed different diets. These results showed that up to 70% of fish meal protein can be replaced by PBM without adversely affecting the growth, survival, FCR, PER and body composition of Litop enaeus vannamei.

  7. Growth of α-sexithiophene nanostructures on C60 thin film layers

    DEFF Research Database (Denmark)

    Radziwon, Michal Jędrzej; Madsen, Morten; Balzer, Frank

    2014-01-01

    Organic molecular beam grown -sexithiophene (-6T) forms nanostructured thin films on buckminsterfullerene (C60) thin film layers. At substrate temperatures of 300K during growth a rough continuous film is observed, which develop to larger elongated islands and dendritic- as well as needle like ...... fluorescence polarimetry measurements the in-plane orientation of the crystalline sites within the needle like structures is determined. The polarimetry investigations strongly indicate that the needle like structures consist of lying molecules....

  8. Development of a chemically defined platform fed-batch culture media for monoclonal antibody-producing CHO cell lines with optimized choline content.

    Science.gov (United States)

    Kuwae, Shinobu; Miyakawa, Ichiko; Doi, Tomohiro

    2018-01-11

    A chemically defined platform basal medium and feed media were developed using a single Chinese hamster ovary (CHO) cell line that produces a monoclonal antibody (mAb). Cell line A, which showed a peak viable cell density of 5.9 × 10 6  cells/mL and a final mAb titer of 0.5 g/L in batch culture, was selected for the platform media development. Stoichiometrically balanced feed media were developed using glucose as an indicator of cell metabolism to determine the feed rates of all other nutrients. A fed-batch culture of cell line A using the platform fed-batch medium yielded a 6.4 g/L mAb titer, which was 12-fold higher than that of the batch culture. To examine the applicability of the platform basal medium and feed media, three other cell lines (A16, B, and C) that produce mAbs were cultured using the platform fed-batch medium, and they yielded mAb titers of 8.4, 3.3, and 6.2 g/L, respectively. The peak viable cell densities of the three cell lines ranged from 1.3 × 10 7 to 1.8 × 10 7  cells/mL. These results show that the nutritionally balanced fed-batch medium and feeds worked well for other cell lines. During the medium development, we found that choline limitation caused a lower cell viability, a lower mAb titer, a higher mAb aggregate content, and a higher mannose-5 content. The optimal choline chloride to glucose ratio for the CHO cell fed-batch culture was determined. Our platform basal medium and feed media will shorten the medium-development time for mAb-producing cell lines.

  9. Cold cathode emission studies on topographically modified few layer and single layer MoS2 films

    Science.gov (United States)

    Gaur, Anand P. S.; Sahoo, Satyaprakash; Mendoza, Frank; Rivera, Adriana M.; Kumar, Mohit; Dash, Saroj P.; Morell, Gerardo; Katiyar, Ram S.

    2016-01-01

    Nanostructured materials, such as carbon nanotubes, are excellent cold cathode emitters. Here, we report comparative field emission (FE) studies on topographically tailored few layer MoS2 films consisting of ⟨0001⟩ plane perpendicular (⊥) to c-axis (i.e., edge terminated vertically aligned) along with planar few layer and monolayer (1L) MoS2 films. FE measurements exhibited lower turn-on field Eto (defined as required applied electric field to emit current density of 10 μA/cm2) ˜4.5 V/μm and higher current density ˜1 mA/cm2, for edge terminated vertically aligned (ETVA) MoS2 films. However, Eto magnitude for planar few layer and 1L MoS2 films increased further to 5.7 and 11 V/μm, respectively, with one order decrease in emission current density. The observed differences in emission behavior, particularly for ETVA MoS2 is attributed to the high value of geometrical field enhancement factor (β), found to be ˜1064, resulting from the large confinement of localized electric field at edge exposed nanograins. Emission behavior of planar few layers and 1L MoS2 films are explained under a two step emission mechanism. Our studies suggest that with further tailoring the microstructure of ultra thin ETVA MoS2 films would result in elegant FE properties.

  10. Growth performance, carcass traits and meat quality of yellow-feathered broilers fed graded levels of alfalfa meal with or without wheat.

    Science.gov (United States)

    Jiang, Shouqun; Gou, Zhongyong; Li, Long; Lin, Xiajing; Jiang, Zongyong

    2018-03-01

    The effects of 0, 40 and 80 g/kg alfalfa meal on growth performance, carcass traits and meat quality of Chinese yellow-feathered broilers fed diets containing or lacking wheat (0 or 200 g/kg) as part of the energy source, were examined using random design with a 2 × 3 factorial arrangement of treatments. Dressing percentage and semi-eviscerated proportion were lower, and meat color a* (redness) value was higher in birds fed diets containing wheat than diets lacking wheat (P meat was higher in chickens fed corn-based diets than in those fed wheat (P Meat from those supplemented with 40 g/kg alfalfa meal had better taste than the other two levels (P meat color and lower drip loss than those fed the diets without wheat, and adding 40 g/kg alfalfa meal generally improved meat quality and taste. © 2017 Japanese Society of Animal Science.

  11. Growth and Etch Rate Study of Low Temperature Anodic Silicon Dioxide Thin Films

    Directory of Open Access Journals (Sweden)

    Akarapu Ashok

    2014-01-01

    Full Text Available Silicon dioxide (SiO2 thin films are most commonly used insulating films in the fabrication of silicon-based integrated circuits (ICs and microelectromechanical systems (MEMS. Several techniques with different processing environments have been investigated to deposit silicon dioxide films at temperatures down to room temperature. Anodic oxidation of silicon is one of the low temperature processes to grow oxide films even below room temperature. In the present work, uniform silicon dioxide thin films are grown at room temperature by using anodic oxidation technique. Oxide films are synthesized in potentiostatic and potentiodynamic regimes at large applied voltages in order to investigate the effect of voltage, mechanical stirring of electrolyte, current density and the water percentage on growth rate, and the different properties of as-grown oxide films. Ellipsometry, FTIR, and SEM are employed to investigate various properties of the oxide films. A 5.25 Å/V growth rate is achieved in potentiostatic mode. In the case of potentiodynamic mode, 160 nm thickness is attained at 300 V. The oxide films developed in both modes are slightly silicon rich, uniform, and less porous. The present study is intended to inspect various properties which are considered for applications in MEMS and Microelectronics.

  12. MOCVD Growth and Characterization of n-type Zinc Oxide Thin Films

    Science.gov (United States)

    Ben-Yaacov, Tammy

    In the past decade, there has been widespread effort in the development of zinc oxide as a II-V1 semiconductor material. ZnO has potential advantages in optoelectronip device applications due to its unique electrical and optical properties. What stands out among these properties is its wide direct bandgap of 3.37 eV and its high electrical conductivity and transparency in the visible and near-UV regions of the spectrum. ZnO can be grown heteroepitaxially on GaN under near lattice-matched conditions and homoepitaxially as well, as high-quality bulk ZnO substrates are commercially available. This dissertation focuses on the development of the growth of high-quality, single crystal n-type ZnO films, control of n-type conductivity, as well as its application as a transparent contact material in GaN-based devices. The first part of this dissertation is an extensive heteroepitaxial and homoepitaxial growth study presenting the properties of ZnO(0001) layers grown on GaN(0001) templates and ZnO(0001) substrates. We show that deposition on GaN requires a two-step growth technique involving the growth of a low temperature nucleation layer before growing a high temperature epitaxial layer in order to obtain smooth ZnO films with excellent crystal quality and step-flow surface morphology. We obtained homoepitaxial ZnO(0001) films of structural quality and surface morphology that is comparable to the as-received substrates, and showed that a high growth temperature (≥1000°C) is needed in order to achieve step-flow growth mode. We performed n-type doping experiments, and established the conditions for which Indium effectively controls the n-type conductivity of ZnO films grown on GaN(0001) templates. A peak carrier concentration of 3.22x 10 19cm-3 and minimum sheet resistance of 97 O/square was achieved, while simultaneously maintaining good morphology and crystal quality. Finally, we present In-doped ZnO films implemented as p-contacts for GaN-based solar cells and LEDs

  13. Moderately Low Magnesium Intake Impairs Growth of Lean Body Mass in Obese-Prone and Obese-Resistant Rats Fed a High-Energy Diet

    Directory of Open Access Journals (Sweden)

    Jesse Bertinato

    2016-04-01

    Full Text Available The physical and biochemical changes resulting from moderately low magnesium (Mg intake are not fully understood. Obesity and associated co-morbidities affect Mg metabolism and may exacerbate Mg deficiency and physiological effects. Male rats selectively bred for diet-induced obesity (OP, obese-prone or resistance (OR, obese-resistant were fed a high-fat, high-energy diet containing moderately low (LMg, 0.116 ± 0.001 g/kg or normal (NMg, 0.516 ± 0.007 g/kg Mg for 13 weeks. The growth, body composition, mineral homeostasis, bone development, and glucose metabolism of the rats were examined. OP and OR rats showed differences (p < 0.05 in many physical and biochemical measures regardless of diet. OP and OR rats fed the LMg diet had decreased body weight, lean body mass, decreased femoral size (width, weight, and volume, and serum Mg and potassium concentrations compared to rats fed the NMg diet. The LMg diet increased serum calcium (Ca concentration in both rat strains with a concomitant decrease in serum parathyroid hormone concentration only in the OR strain. In the femur, Mg concentration was reduced, whereas concentrations of Ca and sodium were increased in both strains fed the LMg diet. Plasma glucose and insulin concentrations in an oral glucose tolerance test were similar in rats fed the LMg or NMg diets. These results show that a moderately low Mg diet impairs the growth of lean body mass and alters femoral geometry and mineral metabolism in OP and OR rats fed a high-energy diet.

  14. Stoichiometry-, phase- and orientation-controlled growth of polycrystalline pyrite (FeS{sub 2}) thin films by MOCVD

    Energy Technology Data Exchange (ETDEWEB)

    Hoepfner, C.; Ellmer, K.; Ennaoui, A.; Pettenkofer, C.; Fiechter, S.; Tributsch, H. [Hahn-Meitner-Institut Berlin, Abteilung Solare Energetik, Berlin (Germany)

    1995-06-01

    The growth process of polycrystalline pyrite thin films employing low pressure metalorganic chemical vapor deposition (LP-MOCVD) in a vertical cold wall reactor has been investigated. Iron pentacarbonyl (IPC) and t-butyldisulfide (TBDS) were utilized as precursors. Study of the growth rate as a function of temperature reveals a kinetically controlled growth process with an activation energy of 73 kJ/mol over the temperature range from 250 to 400C. From 500 to 630C, the growth rate is mainly mass transport limited. Decomposition of the films into pyrrhotite (Fe{sub 1-x}S) occurs at higher growth temperatures. The S/Fe ratio in the films has been controlled from 1.23 up to 2.03 by changing the TBDS partial pressure. With increasing deposition temperature, the crystallites in the films show the tendency to grow [100]-oriented on amorphous substrates at a growth rate of 2.5 A/s. The grains show a preferential orientation in the [111] direction upon lowering the growth rate down to 0.3 A/s. Temperatures above 550C are beneficial in enhancing the grain size in the columnar structured films up to 1.0 {mu}m

  15. Irradiated film material and method of the irradiation

    International Nuclear Information System (INIS)

    1978-01-01

    The irradiation of polymer film material is a strengthening procedure. To obtain a substantial uniformity in the radiation dosage profile, the film is irradiated in a trough having lateral deflection blocks adjacent to the film edges. These deflect the electrons towards the surface of the trough bottom for further deflection towards the film edge. (C.F.)

  16. Growth and clinical variables in nitrogen-restricted piglets fed an adjusted essential amino acid mix: Effects using partially intact protein-based diets

    Science.gov (United States)

    Current recommendations for protein levels in infant formula ensure that growth matches or exceeds growth of breast-fed infants, but may provide a surplus of amino acids (AA). Recent studies in infants using AA-based formulas support specific adjustment of the essential AA (EAA) composition allowing...

  17. Buckyball microwave plasmas: Fragmentation and diamond-film growth

    International Nuclear Information System (INIS)

    Gruen, D.M.; Liu, Shengzhong; Krauss, A.R.; Pan, Xianzheng.

    1993-08-01

    Microwave discharges (2.45 GHz) have been generated in C 60 -containing Ar produced by flowing Ar over fullerene-containing soot. Optical spectroscopy shows that the spectrum is dominated by the d 3 Πg-a 3 Πu Swan bands of C 2 and particularly the Δv = -2, -1, 0, +1, and +2 sequences. These results give direct evidence that C 2 is one of the products of C 60 fragmentation brought about, at least in part, by collisionally induced dissociation (CID). C 60 has been used as a precursor in a plasma-enhanced chemical vapor deposition (PECVD) experiment to grow diamond-thin films. The films, grown in an Ar/H 2 gas mixture (0.14% carbon content, 100 Torr, 20 sccm Ar, 4 sccm H 2 , 1500 W, 850 degree C substrate temperature), were characterized with SEM, XRD, and Raman spectroscopy. Growth rate was found to be ∼ 0.6 μ/hr. Assuming a linear dependence on carbon concentration, a growth rate at least six times higher than commonly observed using methane as a precursor, would be predicted at a carbon content of 1% based on C 60 . Energetic and mechanistic arguments are advanced to rationalize this result based on C 2 as the growth species

  18. Multi-Directional Growth of Aligned Carbon Nanotubes Over Catalyst Film Prepared by Atomic Layer Deposition

    Directory of Open Access Journals (Sweden)

    Zhou Kai

    2010-01-01

    Full Text Available Abstract The structure of vertically aligned carbon nanotubes (CNTs severely depends on the properties of pre-prepared catalyst films. Aiming for the preparation of precisely controlled catalyst film, atomic layer deposition (ALD was employed to deposit uniform Fe2O3 film for the growth of CNT arrays on planar substrate surfaces as well as the curved ones. Iron acetylacetonate and ozone were introduced into the reactor alternately as precursors to realize the formation of catalyst films. By varying the deposition cycles, uniform and smooth Fe2O3 catalyst films with different thicknesses were obtained on Si/SiO2 substrate, which supported the growth of highly oriented few-walled CNT arrays. Utilizing the advantage of ALD process in coating non-planar surfaces, uniform catalyst films can also be successfully deposited onto quartz fibers. Aligned few-walled CNTs can be grafted on the quartz fibers, and they self-organized into a leaf-shaped structure due to the curved surface morphology. The growth of aligned CNTs on non-planar surfaces holds promise in constructing hierarchical CNT architectures in future.

  19. Single crystalline metal films as substrates for graphene growth

    Energy Technology Data Exchange (ETDEWEB)

    Zeller, Patrick; Henss, Ann-Kathrin; Wintterlin, Joost [Department Chemie, Ludwig-Maximilians-Universitaet Muenchen (Germany); Weinl, Michael; Schreck, Matthias [Institut fuer Physik, Universitaet Augsburg (Germany); Speck, Florian; Ostler, Markus [Lehrstuhl fuer Technische Physik, Universitaet Erlangen-Nuernberg, Erlangen (Germany); Institut fuer Physik, Technische Universitaet Chemnitz (Germany); Seyller, Thomas [Institut fuer Physik, Technische Universitaet Chemnitz (Germany)

    2017-11-15

    Single crystalline metal films deposited on YSZ-buffered Si(111) wafers were investigated with respect to their suitability as substrates for epitaxial graphene. Graphene was grown by CVD of ethylene on Ru(0001), Ir(111), and Ni(111) films in UHV. For analysis a variety of surface science methods were used. By an initial annealing step the surface quality of the films was strongly improved. The temperature treatments of the metal films caused a pattern of slip lines, formed by thermal stress in the films, which, however, did not affect the graphene quality and even prevented wrinkle formation. Graphene was successfully grown on all three types of metal films in a quality comparable to graphene grown on bulk single crystals of the same metals. In the case of the Ni(111) films the originally obtained domain structure of rotational graphene phases could be transformed into a single domain by annealing. This healing process is based on the control of the equilibrium between graphene and dissolved carbon in the film. For the system graphene/Ni(111) the metal, after graphene growth, could be removed from underneath the epitaxial graphene layer by a pure gas phase reaction, using the reaction of CO with Ni to give gaseous Ni(CO){sub 4}. (copyright 2017 by WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  20. A stochastic model of solid state thin film deposition: Application to chalcopyrite growth

    Directory of Open Access Journals (Sweden)

    Robert J. Lovelett

    2016-04-01

    Full Text Available Developing high fidelity quantitative models of solid state reaction systems can be challenging, especially in deposition systems where, in addition to the multiple competing processes occurring simultaneously, the solid interacts with its atmosphere. In this work, we develop a model for the growth of a thin solid film where species from the atmosphere adsorb, diffuse, and react with the film. The model is mesoscale and describes an entire film with thickness on the order of microns. Because it is stochastic, the model allows us to examine inhomogeneities and agglomerations that would be impossible to characterize with deterministic methods. We demonstrate the modeling approach with the example of chalcopyrite Cu(InGa(SeS2 thin film growth via precursor reaction, which is a common industrial method for fabricating thin film photovoltaic modules. The model is used to understand how and why through-film variation in the composition of Cu(InGa(SeS2 thin films arises and persists. We believe that the model will be valuable as an effective quantitative description of many other materials systems used in semiconductors, energy storage, and other fast-growing industries.

  1. Tailoring the nanoscale morphology of HKUST-1 thin films via codeposition and seeded growth.

    Science.gov (United States)

    Brower, Landon J; Gentry, Lauren K; Napier, Amanda L; Anderson, Mary E

    2017-01-01

    Integration of surface-anchored metal-organic frameworks (surMOFs) within hierarchical architectures is necessary for potential sensing, electronic, optical, or separation applications. It is important to understand the fundamentals of film formation for these surMOFs in order to develop strategies for their incorporation with nanoscale control over lateral and vertical dimensions. This research identified processing parameters to control the film morphology for surMOFs of HKUST-1 fabricated by codeposition and seeded deposition. Time and temperature were investigated to observe film formation, to control film thickness, and to tune morphology. Film thickness was investigated by ellipsometry, while film structure and film roughness were characterized by atomic force microscopy. Films formed via codeposition resulted in nanocrystallites anchored to the gold substrate. A dynamic process at the interface was observed with a low density of large particulates (above 100 nm) initially forming on the substrate; and over time these particulates were slowly replaced by the prevalence of smaller crystallites (ca. 10 nm) covering the substrate at a high density. Elevated temperature was found to expedite the growth process to obtain the full range of surface morphologies with reasonable processing times. Seed crystals formed by the codeposition method were stable and nucleated growth throughout a subsequent layer-by-layer deposition process. These seed crystals templated the final film structure and tailor the features in lateral and vertical directions. Using codeposition and seeded growth, different surface morphologies with controllable nanoscale dimensions can be designed and fabricated for integration of MOF systems directly into device architectures and sensor platforms.

  2. Tailoring the nanoscale morphology of HKUST-1 thin films via codeposition and seeded growth

    Directory of Open Access Journals (Sweden)

    Landon J. Brower

    2017-11-01

    Full Text Available Integration of surface-anchored metal-organic frameworks (surMOFs within hierarchical architectures is necessary for potential sensing, electronic, optical, or separation applications. It is important to understand the fundamentals of film formation for these surMOFs in order to develop strategies for their incorporation with nanoscale control over lateral and vertical dimensions. This research identified processing parameters to control the film morphology for surMOFs of HKUST-1 fabricated by codeposition and seeded deposition. Time and temperature were investigated to observe film formation, to control film thickness, and to tune morphology. Film thickness was investigated by ellipsometry, while film structure and film roughness were characterized by atomic force microscopy. Films formed via codeposition resulted in nanocrystallites anchored to the gold substrate. A dynamic process at the interface was observed with a low density of large particulates (above 100 nm initially forming on the substrate; and over time these particulates were slowly replaced by the prevalence of smaller crystallites (ca. 10 nm covering the substrate at a high density. Elevated temperature was found to expedite the growth process to obtain the full range of surface morphologies with reasonable processing times. Seed crystals formed by the codeposition method were stable and nucleated growth throughout a subsequent layer-by-layer deposition process. These seed crystals templated the final film structure and tailor the features in lateral and vertical directions. Using codeposition and seeded growth, different surface morphologies with controllable nanoscale dimensions can be designed and fabricated for integration of MOF systems directly into device architectures and sensor platforms.

  3. Growth and characterization of stoichiometric BCN films on highly oriented pyrolytic graphite by radiofrequency plasma enhanced chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Mannan, Md. Abdul, E-mail: amannan75@yahoo.co [Department of Chemistry and Applied Chemistry, Faculty of Science and Engineering, Saga University, 1 Honjo, Saga 840-8502 (Japan); Synchrotron Radiation Research Unit, Quantum Beam Science Directorate, Japan Atomic Energy Agency, Tokai-mura, Naka-gun, Ibaraki 319-1195 (Japan); Noguchi, Hideyuki; Kida, Tetsuya; Nagano, Masamitsu [Department of Chemistry and Applied Chemistry, Faculty of Science and Engineering, Saga University, 1 Honjo, Saga 840-8502 (Japan); Hirao, Norie; Baba, Yuji [Synchrotron Radiation Research Unit, Quantum Beam Science Directorate, Japan Atomic Energy Agency, Tokai-mura, Naka-gun, Ibaraki 319-1195 (Japan)

    2010-05-31

    Hexagonal boron carbonitride (h-BCN) hybrid films have been synthesized on highly oriented pyrolytic graphite by radiofrequency plasma enhanced chemical vapor deposition using tris-(dimethylamino)borane as a single-source molecular precursor. The films were characterized by X-ray photoelectron spectroscopy (XPS), near-edge X-ray absorption fine structure (NEXAFS) and Raman spectroscopic measurements. XPS measurement showed that the B atoms were bonded to C and N atoms to form the sp{sup 2}-B-C-N atomic hybrid chemical environment. The atomic composition estimated from the XPS of the typical sample was found to be almost B{sub 1}C{sub 1}N{sub 1}. NEXAFS spectra of the B K-edge and the N K-edge had the peaks due to the {pi}* and {sigma}* resonances of sp{sup 2} hybrid orbitals implying the existence of the sp{sup 2} hybrid configurations of h-BCN around the B atoms. The G band at 1592 and D band at 1352 cm{sup -1} in the Raman spectra also suggested the presence of the graphite-like sp{sup 2}-B-C-N atomic hybrid bonds. The films consisted of micrometer scale crystalline structure of around 10 {mu}m thick has been confirmed by the field emission scanning electron microscopy.

  4. Effect of Nano-Ni Catalyst on the Growth and Characterization of Diamond Films by HFCVD

    Directory of Open Access Journals (Sweden)

    Chien-Chung Teng

    2010-01-01

    Full Text Available Four different catalysts, nanodiamond seed, nano-Ni, diamond powder, and mixture of nano-Ni/diamond powder, were used to activate Si wafers for diamond film growth by hot-filament CVD (HFCVD. Diamond crystals were shown to grow directly on both large diamond powder and small nanodiamond seed, but a better crystallinity of diamond film was observed on the ultrasonicated nanodiamond seeded Si substrate. On the other hand, nano-Ni nanocatalysts seem to promote the formation of amorphous carbon but suppress transpolyacetylene (t-PA phases at the initial growth of diamond films. The subsequent nucleation and growth of diamond crystals on the amorphous carbon layer leads to generation of the spherical diamond particles and clusters prior to coalescence into continuous diamond films based on the CH3 addition mechanism as characterized by XRD, Raman, ATR/FT-IR, XPS, TEM, SEM, and AFM techniques. Moreover, a 36% reduction in surface roughness of diamond film assisted by nano-Ni catalyst is quite significant.

  5. Domain growth of carbon nanotubes assisted by dewetting of thin catalyst precursor films

    Energy Technology Data Exchange (ETDEWEB)

    Srivastava, Alok Kumar [Defence Materials and Stores R and D Establishment (DRDO), GT Road, Kanpur 208013 (India); Department of Chemical Engineering, Indian Institute of Technology, Kanpur 208016 (India); Sachan, Priyanka; Samanta, Chandan [Department of Chemical Engineering, Indian Institute of Technology, Kanpur 208016 (India); Mukhopadhyay, Kingsuk [Defence Materials and Stores R and D Establishment (DRDO), GT Road, Kanpur 208013 (India); Sharma, Ashutosh, E-mail: ashutos@iitk.ac.in [Department of Chemical Engineering, Indian Institute of Technology, Kanpur 208016 (India)

    2014-01-01

    We explore self-organized dewetting of ultrathin films of a novel metal complex as a one step surface patterning method to create nanoislands of iron, using which spatially separated carbon nanostructures were synthesized. Dewetting of ultrathin metal complex films was induced by two different methods: liquid solvent exposure and thermal annealing to engender surface patterning. For thermal dewetting, thin films of the iron oleate complex were dewetted at high temperature. In the case of liquid solvent assisted dewetting, the metal complex, mixed with a sacrificial polymer (polystyrene) was spin coated as thin films (<40 nm) and then dewetted under an optimal solution mixture consisting of methyl ethyl ketone, acetone and water. The carrier polymer was then selectively removed to produce the iron metal islands. These metal islands were used for selective growth of discrete patches of multiwall CNTs and CNFs by a chemical vapor deposition (CVD) process. Solvent induced dewetting showed clear advantages over thermal dewetting owing to reduced size of catalyst domains formed by dewetting, an improved control over CNT growth as well as in its ability to immobilize the seed particles. The generic solution mediated dewetting and pattern generation in thin films of various catalytic precursors can thus be a powerful method for selective domain growth of a variety of functional nanomaterials.

  6. Whey-reduced weight gain is associated with a temporary growth reduction in young mice fed a high-fat diet

    DEFF Research Database (Denmark)

    Tranberg, Britt; Madsen, Andreas N.; Hansen, Axel K.

    2015-01-01

    Whey protein consumption reportedly alleviates parameters of the metabolic syndrome. Here, we investigated the effects of whey protein isolate (whey) in young mice fed a high-fat diet. We hypothesized that whey as the sole protein source reduced early weight gain associated with retarded growth...... and decreased concentration of insulin-like growth factor-1. Moreover, we hypothesized that these changes were explained by increased nitrogen loss via elevated urea production and/or increased energy expenditure. Male 5-week-old C57BL/6 mice were fed high-fat diets with the protein source being either whey......, casein or a combination of both for 5 weeks. After 1, 3 or 5 weeks, respectively, the mice were subjected to a meal challenge with measurements of blood and urinary urea before and 1 and 3 h after eating a weighed meal of their respective diets. In a subset of mice, energy expenditure was measured...

  7. Ultra-low damping in lift-off structured yttrium iron garnet thin films

    Science.gov (United States)

    Krysztofik, A.; Coy, L. E.; Kuświk, P.; Załeski, K.; Głowiński, H.; Dubowik, J.

    2017-11-01

    We show that using maskless photolithography and the lift-off technique, patterned yttrium iron garnet thin films possessing ultra-low Gilbert damping can be accomplished. The films of 70 nm thickness were grown on (001)-oriented gadolinium gallium garnet by means of pulsed laser deposition, and they exhibit high crystalline quality, low surface roughness, and the effective magnetization of 127 emu/cm3. The Gilbert damping parameter is as low as 5 ×10-4. The obtained structures have well-defined sharp edges which along with good structural and magnetic film properties pave a path in the fabrication of high-quality magnonic circuits and oxide-based spintronic devices.

  8. Intermediate surface structure between step bunching and step flow in SrRuO3 thin film growth

    Science.gov (United States)

    Bertino, Giulia; Gura, Anna; Dawber, Matthew

    We performed a systematic study of SrRuO3 thin films grown on TiO2 terminated SrTiO3 substrates using off-axis magnetron sputtering. We investigated the step bunching formation and the evolution of the SRO film morphology by varying the step size of the substrate, the growth temperature and the film thickness. The thin films were characterized using Atomic Force Microscopy and X-Ray Diffraction. We identified single and multiple step bunching and step flow growth regimes as a function of the growth parameters. Also, we clearly observe a stronger influence of the step size of the substrate on the evolution of the SRO film surface with respect to the other growth parameters. Remarkably, we observe the formation of a smooth, regular and uniform ``fish skin'' structure at the transition between one regime and another. We believe that the fish skin structure results from the merging of 2D flat islands predicted by previous models. The direct observation of this transition structure allows us to better understand how and when step bunching develops in the growth of SrRuO3 thin films.

  9. TiN films by Atomic Layer Deposition: Growth and electrical characterization down to sub-nm thickness

    NARCIS (Netherlands)

    Van Hao, B.; Wolters, Robertus A.M.; Kovalgin, Alexeij Y.

    2012-01-01

    This study reports on the growth and characterization of TiN thib films obtained by atomic layer deposition at 350-425 ◦C. We observe a growth of the continuous layers from the very beginning of the process, i.e. for a thickness of 0.65 nm, which is equivalent to 3 monolayers of TiN. The film growth

  10. Thin film growth into the ion track structures in polyimide by atomic layer deposition

    Science.gov (United States)

    Mättö, L.; Malm, J.; Arstila, K.; Sajavaara, T.

    2017-09-01

    High-aspect ratio porous structures with controllable pore diameters and without a stiff substrate can be fabricated using the ion track technique. Atomic layer deposition is an ideal technique for depositing thin films and functional surfaces on complicated 3D structures due to the high conformality of the films. In this work, we studied Al2O3 and TiO2 films grown by ALD on pristine polyimide (Kapton HN) membranes as well as polyimide membranes etched in sodium hypochlorite (NaOCl) and boric acid (BO3) solution by means of RBS, PIXE, SEM-EDX and helium ion microcopy (HIM). The focus was on the first ALD growth cycles. The areal density of Al2O3 film in the 400 cycle sample was determined to be 51 ± 3 × 1016 at./cm2, corresponding to the thickness of 55 ± 3 nm. Furthermore, the growth per cycle was 1.4 Å/cycle. The growth is highly linear from the first cycles. In the case of TiO2, the growth per cycle is clearly slower during the first 200 cycles but then it increases significantly. The growth rate based on RBS measurements is 0.24 Å/cycle from 3 to 200 cycles and then 0.6 Å/cycle between 200 and 400 cycles. The final areal density of TiO2 film after 400 cycles is 148 ± 3 × 1015 at./cm2 which corresponds to the thickness of 17.4 ± 0.4 nm. The modification of the polyimide surface by etching prior to the deposition did not have an effect on the Al2O3 and TiO2 growth.

  11. In-situ secondary growth of nanocube-based Prussian-blue film as an ultrasensitive biosensor

    Directory of Open Access Journals (Sweden)

    Yu Liu

    2017-06-01

    Full Text Available A regular nanostructure has been widely confirmed to result ina marked improvement in material performance in biosensing applications. In the present study, a regular nanostructured Prussian blue (PB film with two heterogeneous crystal layers was synthesized in-situ using a secondary growth method. A PB seed layer was first controlled to form uniform cube-like crystal nuclei through an ultrasonic reaction with a single reactant. Then, well-defined 100 nm PB nanocubes were further crystallized on this seed layer using a self-assembly approach. In order to accelerate the electron transfer rate during the enzyme reaction for glucose detection, the graphene was used as the main cross-linker to immobilize glucose oxidase on the PB film. The as-prepared biosensor exhibited high electrocatalysis and electron conductivity for the detection of trace glucose with a sensitivity of 141.5 μA mM−1 cm−2, as well as excellent anti-interference ability in the presence of ascorbic acid and uric acid under a low operation potential of −0.05 V.

  12. Mocvd Growth of Group-III Nitrides on Silicon Carbide: From Thin Films to Atomically Thin Layers

    Science.gov (United States)

    Al Balushi, Zakaria Y.

    Group-III nitride semiconductors (AlN, GaN, InN and their alloys) are considered one of the most important class of materials for electronic and optoelectronic devices. This is not limited to the blue light-emitting diode (LED) used for efficient solid-state lighting, but other applications as well, such as solar cells, radar and a variety of high frequency power electronics, which are all prime examples of the technological importance of nitride based wide bandgap semiconductors in our daily lives. The goal of this dissertation work was to explore and establish new growth schemes to improve the structural and optical properties of thick to atomically thin films of group-III nitrides grown by metalorganic chemical vapor deposition (MOCVD) on SiC substrates for future novel devices. The first research focus of this dissertation was on the growth of indium gallium nitride (InGaN). This wide bandgap semiconductor has attracted much research attention as an active layer in LEDs and recently as an absorber material for solar cells. InGaN has superior material properties for solar cells due to its wavelength absorption tunability that nearly covers the entire solar spectrum. This can be achieved by controlling the indium content in thick grown material. Thick InGaN films are also of interest as strain reducing based layers for deep-green and red light emitters. The growth of thick films of InGaN is, however, hindered by several combined problems. This includes poor incorporation of indium in alloys, high density of structural and morphological defects, as well as challenges associated with the segregation of indium in thick films. Overcoming some of these material challenges is essential in order integrate thick InGaN films into future optoelectronics. Therefore, this dissertation research investigated the growth mechanism of InGaN layers grown in the N-polar direction by MOCVD as a route to improve the structural and optical properties of thick InGaN films. The growth

  13. Growth and BZO-doping of the nanostructured YBCO thin films on buffered metal substrates

    DEFF Research Database (Denmark)

    Huhtinen, H.; Irjala, M.; Paturi, P.

    2010-01-01

    The growth of the nanostructured YBa2Cu3O6+x (YBCO) films is investigated for the first time on biaxially textured NiW substrates used in coated conductor technology. The optimization process of superconducting layers is made in wide magnetic field and temperature range in order to understand...... the vortex pinning structure and mechanism in our films prepared from nanostructured material. Structural analysis shows that growth mechanism in YBCO films grown on NiW is completely different when compared to YBCO on STO. Films on NiW are much rougher, there is huge in-plane variation of YBCO crystals...... and moreover out-of-plane long range lattice ordering is greatly reduced. Magnetic measurements demonstrate that jc in films grown on NiW is higher in high magnetic fields and low temperatures. This effect is connected to the amount of pinning centres observed in films on metal substrates which are effective...

  14. Diffusion and crystal growth in plasma deposed thin ITO films

    International Nuclear Information System (INIS)

    Steffen, H.; Wulff, H.; Quaas, M.; Tun, Tin Maung.; Hipple, R.

    2000-01-01

    Tin-doped indium oxide (ITO) films were deposited by means of DC-planar magnetron sputtering. A metallic In/Sn (90/10) target an Ar/O 2 gas mixture were used. The oxygen flow was varied between 0 and 2 sccm. Substrate voltages between 0 and -100 V were used. With increasing oxygen flow film structure and composition change from crystalline metallic In/Sn to amorphous ITO. Simultaneously the deposition rate decreases and the film density increases. The diffusion of oxygen into metallic In/Sn films and the amorphous-to-crystalline transformation of ITO were studied using in situ grazing incidence X-ray diffractometry (GIXRD), grazing incidence reflectometry (GIXR), and AFM. From the X-ray integral intensities diffusion constants, activation energies of the diffusion, reaction order and activation energy of the crystal growth were extracted. (authors)

  15. Photoluminescence properties of ZnTe homoepitaxial films deposited by synchrotron-radiation-excited growth

    International Nuclear Information System (INIS)

    Nishio, Mitsuhiro; Hayashida, Kazuki; Harada, Hiroki; Mitsuishi, Yoshiaki; Guo Qixin; Ogawa, Hiroshi

    2001-01-01

    ZnTe homoepitaxial films have been deposited at substrate temperatures between 27 deg. C and 100 deg. C by synchrotron-radiation-excited growth using diethylzinc and diethyltelluride. Effects of diethylzinc transport rate and substrate temperature upon the photoluminescence properties of the ZnTe films have been clarified. Strong deep level emissions centered at 1.85 and 2.1 eV related to defects such as vacancy-impurity complex become emerged with increasing diethylzinc transport rate or substrate temperature. A sharply excitonic emission at 2.375 eV associated with shallow acceptors is observed and neither a donor-acceptor pair recombination nor a deep level luminescence signal is detected in the spectrum of the film grown under the nearly stoichiometric condition, which indicates that ZnTe films of good quality can be grown even at room temperature by this growth technique

  16. Controlling single and few-layer graphene crystals growth in a solid carbon source based chemical vapor deposition

    International Nuclear Information System (INIS)

    Papon, Remi; Sharma, Subash; Shinde, Sachin M.; Vishwakarma, Riteshkumar; Tanemura, Masaki; Kalita, Golap

    2014-01-01

    Here, we reveal the growth process of single and few-layer graphene crystals in the solid carbon source based chemical vapor deposition (CVD) technique. Nucleation and growth of graphene crystals on a polycrystalline Cu foil are significantly affected by the injection of carbon atoms with pyrolysis rate of the carbon source. We observe micron length ribbons like growth front as well as saturated growth edges of graphene crystals depending on growth conditions. Controlling the pyrolysis rate of carbon source, monolayer and few-layer crystals and corresponding continuous films are obtained. In a controlled process, we observed growth of large monolayer graphene crystals, which interconnect and merge together to form a continuous film. On the other hand, adlayer growth is observed with an increased pyrolysis rate, resulting few-layer graphene crystal structure and merged continuous film. The understanding of monolayer and few-layer crystals growth in the developed CVD process can be significant to grow graphene with controlled layer numbers.

  17. XAFS study on ZnO films grown by molecular beam epitaxy

    International Nuclear Information System (INIS)

    Wu Zhihao; Zhou Yinxue; Zhang Xinyi; Fudan Univ., Shanghai; Yu Gencai; Wei Shiqiang; Chen Dongliang

    2004-01-01

    Effects of growth conditions including lattice mismatch and growth temperature on the local structures of ZnO films prepared by MBE have been investigated using fluorescence EXAFS at Zn K edge. The ZnO films were deposited on the Si substrate at 200 degree C and on sapphire substrate at 200 degree C or 300 degree C respectively. The coordination number N in the first shell (number of O atoms immediately surrounding a central Zn atom) remains constant 4 or so for all samples. However, the degree of disorder σ 2 (mean squared displacement) of the local structure is varied with the growth conditions. At the same growth temperature 200 degree C, the degree of disorder is reduced from 0.0080 (Angstrom) 2 to 0.0054 (Angstrom) 2 as the substrate is changed from Si to sapphire; on the same sapphire substrate, the degree of disorder decreases from 0.0054 (Angstrom) 2 to 0.0039 (Angstrom) 2 when the growth temperature is increased from 200 degree C to 300 degree C. Therefore, the higher growth temperature and smaller lattice mismatch can improve the disorder of local structures; the crystal quality of ZnO film will be improved as well . (authors)

  18. Crystallographic analysis of the solid-state dewetting of polycrystalline gold film using automated indexing in a transmission electron microscope

    Energy Technology Data Exchange (ETDEWEB)

    Jang, S. A.; Lee, H. J.; Oh, Y. J., E-mail: yjoh@hanbat.ac.kr [Department of Advanced Materials Science and Engineering, Hanbat National University, 125, Dongseo-daero, Yuseong-gu, Daejeon 305-719 (Korea, Republic of); Thompson, C. V.; Ross, C. A., E-mail: caross@mit.edu [Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139 (United States)

    2015-12-01

    We analyzed the effect of crystallographic anisotropy on the morphological evolution of a 12-nm-thick gold film during solid-state dewetting at high temperatures using automated indexing tool in a transmission electron microscopy. Dewetting initiated at grain-boundary triple junctions adjacent to large grains resulting from abnormal grain growth driven by (111) texture development. Voids at the junctions developed shapes with faceted edges bounded by low-index crystal planes. The kinetic mobility of the edges varied with the crystal orientation normal to the edges, with a predominance of specific edges with the slowest retraction rates as the annealing time was increased.

  19. The use of lactic acid bacteria isolated from intestinal tract of Nile tilapia (Oreochromis niloticus, as growth promoters in fish fed low protein diets

    Directory of Open Access Journals (Sweden)

    Maurilio Lara-Flores

    2013-07-01

    Full Text Available In this study, the effect as growth promoter of five lactic acid strains (Enterococcus faecium, E. durans, Leuconostoc sp., Streptococcus sp. I and Streptococcus sp. II, isolated from intestinal tract of Nile tilapia (Oreochromis niloticus, was evaluated. Eight isocaloric diets were formulated: one containing 40% of protein as positive control, and seven with 27% protein. Five diets with 27% protein were supplemented with one of the isolated lactic acid bacteria in a concentration of 2.5x10(6 cfu g-1 of diet. A commercial probiotic based on S. faecium and Lactobacillus acidophilus was added at the same concentration to one 27% protein diet as a comparative diet, and the last diet was not supplemented with bacteria (negative control. Tilapia fry (280 mg basal weight stocked in 15 L aquaria at a density of two per liter were fed for 12 weeks with experimental diets. Results showed that fry fed with native bacteria supplemented diets presented significantly higher growth and feeding performance than those fed with control diet. Treatment with Streptococcus sp. I isolated from the intestine of Tilapia produced the best growth and feeding efficiency, suggesting that this bacteria is an appropriate native growth promoter.

  20. Preferential orientation relationships in Ca2MnO4 Ruddlesden-Popper thin films

    International Nuclear Information System (INIS)

    Lacotte, M.; David, A.; Prellier, W.; Rohrer, G. S.; Salvador, P. A.

    2015-01-01

    A high-throughput investigation of local epitaxy (called combinatorial substrate epitaxy) was carried out on Ca 2 MnO 4 Ruddlesden-Popper thin films of six thicknesses (from 20 to 400 nm), all deposited on isostructural polycrystalline Sr 2 TiO 4 substrates. Electron backscatter diffraction revealed grain-over-grain local epitaxial growth for all films, resulting in a single orientation relationship (OR) for each substrate-film grain pair. Two preferred epitaxial ORs accounted for more than 90% of all ORs on 300 different microcrystals, based on analyzing 50 grain pairs for each thickness. The unit cell over unit cell OR ([100][001] film ∥ [100][001] substrate , or OR1) accounted for approximately 30% of each film. The OR that accounted for 60% of each film ([100][001] film ∥ [100][010] substrate , or OR2) corresponds to a rotation from OR1 by 90° about the a-axis. OR2 is strongly favored for substrate orientations in the center of the stereographic triangle, and OR1 is observed for orientations very close to (001) or to those near the edge connecting (100) and (110). While OR1 should be lower in energy, the majority observation of OR2 implies kinetic hindrances decrease the frequency of OR1. Persistent grain over grain growth and the absence of variations of the OR frequencies with thickness implies that the growth competition is finished within the first few nm, and local epitaxy persists thereafter during growth

  1. Temperature-dependent templated growth of porphine thin films on the (111) facets of copper and silver

    Energy Technology Data Exchange (ETDEWEB)

    Diller, Katharina, E-mail: katharina.diller@tum.de [Physik-Department, E20, Technische Universität München, 85748 Garching (Germany); Theoretische Chemie, Technische Universität München, 85748 Garching (Germany); Klappenberger, Florian; Allegretti, Francesco; Papageorgiou, Anthoula C.; Fischer, Sybille; Duncan, David A.; Lloyd, Julian A.; Oh, Seung Cheol; Barth, Johannes V. [Physik-Department, E20, Technische Universität München, 85748 Garching (Germany); Maurer, Reinhard J.; Reuter, Karsten [Theoretische Chemie, Technische Universität München, 85748 Garching (Germany)

    2014-10-14

    The templated growth of the basic porphyrin unit, free-base porphine (2H-P), is characterized by means of X-ray photoelectron spectroscopy (XPS) and near-edge X-ray absorption fine-structure (NEXAFS) spectroscopy measurements and density functional theory (DFT). The DFT simulations allow the deconvolution of the complex XPS and NEXAFS signatures into contributions originating from five inequivalent carbon atoms, which can be grouped into C–N and C–C bonded species. Polarization-dependent NEXAFS measurements reveal an intriguing organizational behavior: On both Cu(111) and Ag(111), for coverages up to one monolayer, the molecules adsorb undeformed and parallel to the respective metal surface. Upon increasing the coverage, however, the orientation of the molecules in the thin films depends on the growth conditions. Multilayers deposited at low temperatures exhibit a similar average tilting angle (30° relative to the surface plane) on both substrates. Conversely, for multilayers grown at room temperature a markedly different scenario exists. On Cu(111) the film thickness is self-limited to a coverage of approximately two layers, while on Ag(111) multilayers can be grown easily and, in contrast to the bulk 2H-P crystal, the molecules are oriented perpendicular to the surface. This difference in molecular orientation results in a modified line-shape of the C 1s XPS signatures, which depends on the incident photon energy and is explained by comparison with depth-resolved DFT calculations. Simulations of ionization energies for differently stacked molecules show no indication for a packing-induced modification of the multilayer XP spectra, thus indicating that the comparison of single molecule calculations to multilayer data is justified.

  2. Synthesis and electronic properties of Ruddlesden-Popper strontium iridate epitaxial thin films stabilized by control of growth kinetics

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Xiaoran; Cao, Yanwei; Pal, B.; Middey, S.; Kareev, M.; Choi, Y.; Shafer, P.; Haskel, D.; Arenholz, E.; Chakhalian, J.

    2017-12-01

    We report on the selective fabrication of high-quality Sr2IrO4 and SrIrO3 epitaxial thin films from a single polycrystalline Sr2IrO4 target by pulsed laser deposition. Using a combination of x-ray diffraction and photoemission spectroscopy characterizations, we discover that within a relatively narrow range of substrate temperature, the oxygen partial pressure plays a critical role in the cation stoichiometric ratio of the films, and triggers the stabilization of different Ruddlesden-Popper (RP) phases. Resonant x-ray absorption spectroscopy measurements taken at the Ir L edge and the O K edge demonstrate the presence of strong spin-orbit coupling, and reveal the electronic and orbital structures of both compounds. These results suggest that in addition to the conventional thermodynamics consideration, higher members of the Srn+1IrnO3n+1 series can possibly be achieved by kinetic control away from the thermodynamic limit. These findings offer an approach to the synthesis of ultrathin films of the RP series of iridates and can be extended to other complex oxides with layered structure.

  3. Structure and wettability property of the growth and nucleation surfaces of thermally treated freestanding CVD diamond films

    Science.gov (United States)

    Pei, Xiaoqiang; Cheng, Shaoheng; Ma, Yibo; Wu, Danfeng; Liu, Junsong; Wang, Qiliang; Yang, Yizhou; Li, Hongdong

    2015-08-01

    This paper reports the surface features and wettability properties of the (1 0 0)-textured freestanding chemical vapor deposited (CVD) diamond films after thermal exposure in air at high temperature. Thermal oxidation at proper conditions eliminates selectively nanodiamonds and non-diamond carbons in the films. The growth side of the films contains (1 0 0)-oriented micrometer-sized columns, while its nucleation side is formed of nano-sized tips. The examined wettability properties of the as-treated diamond films reveal a hydrophilicity and superhydrophilicity on the growth surface and nucleation surface, respectively, which is determined by oxygen termination and geometry structure of the surface. When the surface termination is hydrogenated, the wettability of nucleation side converted from superhydrophilicity to high hydrophobicity, while the hydrophilicity of the growth side does not change significantly. The findings open a possibility for realizing freestanding diamond films having not only novel surface structures but also multifunction applications, especially proposed on the selected growth side or nucleation side in one product.

  4. Effects of feeding level and feeding frequency on growth, feed efficiency and nitrogen and phosphorus loss in seabass (Lates calcarifer Bloch fed diets with defatted soybean meal partially replacing fishmeal

    Directory of Open Access Journals (Sweden)

    Srisook, S.

    2007-05-01

    Full Text Available Satun Coastal Fisheries Research and Development Center, Muang, Satun 3Feeding management is crucial for feed efficiency, nutrient utilization, growth of cultured aquatic species and the amount of organic waste produced. This study aimed at investigating effects of two levels offeeding at two feeding frequencies on growth performance, feed efficiency and nitrogen and phosphorus loss in Asian seabass when fed diets with defatted soybean meal (SBM replacing fish meal. Three diets were formulated to contain defatted SBM to replace fish meal at 0, 10 and 20% of fish meal protein. Each diet wasgiven to the fish at either 4% of body weight (BW or to satiation. At each feeding level, the fish were fed at two feeding frequencies, once and twice daily. Fish with an average initial weight of 2.04±0.06 g/fish werereared for twelve weeks in the flow through system. Growth of fish reduced with an increasing amount of defatted SBM incorporated in diets as observed in other carnivorous species. Within groups of fish fed thesame diet, different growth performance and feed efficiency differed due to both feeding level and frequency. Weight gain of fish that were fed diet with defatted SBM replacing 10% of fish meal protein (diet 2until satiation was not significantly different from fish fed fish meal based diet at 4% BW. Furthermore, feeding fish the former diet twice daily resulted in an improvement of FCR, PER and PPV of fish to those ofthe fish fed fish meal based diet at satiation twice daily. Nitrogen and phosphorus loss was affected by diet, feeding level and frequency. Fish fed diet 2 until satiation twice daily lost nitrogen and phosphorus in theamount similar to that of fish fed fish meal based diet until satiation.

  5. Growth analysis of cadmium sulfide thin films by atomic force microscopy

    Energy Technology Data Exchange (ETDEWEB)

    Moutinho, H.R.; Dhere, R.G.; Ramanathan, K. [National Renewable Energy Lab., Golden, CO (United States)] [and others

    1996-05-01

    CdS films have been deposited by solution growth on SnO{sub 2} and glass substrates. Nucleation on SnO{sub 2} occurs at early deposition times, and complete conformal coverage is observed at low thickness values. The average grain size of the CdS films is established at these early times. In films deposited on glass substrates, nucleation is slower and occurs through 3-dimensional islands that increase in size and number as deposition proceeds. Optical measurements show that the bandgap values of CdS films deposited on SnO{sub 2} depend mainly on substrate structure. Hydrogen heat treatment does not affect the surface morphology of the samples, but decreases bandgap values.

  6. Phonon transport across nano-scale curved thin films

    Energy Technology Data Exchange (ETDEWEB)

    Mansoor, Saad B.; Yilbas, Bekir S., E-mail: bsyilbas@kfupm.edu.sa

    2016-12-15

    Phonon transport across the curve thin silicon film due to temperature disturbance at film edges is examined. The equation for radiative transport is considered via incorporating Boltzmann transport equation for the energy transfer. The effect of the thin film curvature on phonon transport characteristics is assessed. In the analysis, the film arc length along the film centerline is considered to be constant and the film arc angle is varied to obtain various film curvatures. Equivalent equilibrium temperature is introduced to assess the phonon intensity distribution inside the curved thin film. It is found that equivalent equilibrium temperature decay along the arc length is sharper than that of in the radial direction, which is more pronounced in the region close to the film inner radius. Reducing film arc angle increases the film curvature; in which case, phonon intensity decay becomes sharp in the close region of the high temperature edge. Equivalent equilibrium temperature demonstrates non-symmetric distribution along the radial direction, which is more pronounced in the near region of the high temperature edge.

  7. Phonon transport across nano-scale curved thin films

    International Nuclear Information System (INIS)

    Mansoor, Saad B.; Yilbas, Bekir S.

    2016-01-01

    Phonon transport across the curve thin silicon film due to temperature disturbance at film edges is examined. The equation for radiative transport is considered via incorporating Boltzmann transport equation for the energy transfer. The effect of the thin film curvature on phonon transport characteristics is assessed. In the analysis, the film arc length along the film centerline is considered to be constant and the film arc angle is varied to obtain various film curvatures. Equivalent equilibrium temperature is introduced to assess the phonon intensity distribution inside the curved thin film. It is found that equivalent equilibrium temperature decay along the arc length is sharper than that of in the radial direction, which is more pronounced in the region close to the film inner radius. Reducing film arc angle increases the film curvature; in which case, phonon intensity decay becomes sharp in the close region of the high temperature edge. Equivalent equilibrium temperature demonstrates non-symmetric distribution along the radial direction, which is more pronounced in the near region of the high temperature edge.

  8. Effects of a magnetic field on growth of porous alumina films on aluminum

    Energy Technology Data Exchange (ETDEWEB)

    Ispas, Adriana; Bund, Andreas [Technische Universitaet Dresden, Physikalische Chemie und Elektrochemie, 01062 Dresden (Germany); Vrublevsky, Igor, E-mail: vrublevsky@bsuir.edu.b [Belarusian State University of Informatics and Radioelectronics Minsk, Department of Micro and Nanoelectronics, 220013 Minsk (Belarus)

    2010-05-01

    The effects induced by a magnetic field on the oxide film growth on aluminum in sulfuric, oxalic, phosphoric and sulfamic acid, and on current transients during re-anodizing of porous alumina films in the barrier-type electrolyte, were studied. Aluminum films of 100 nm thickness were prepared by thermal evaporation on Si wafer substrates. We could show that the duration of the anodizing process increased by 33% during anodizing in sulfuric acid when a magnetic field was applied (0.7 T), compared to the process without a magnetic field. Interestingly, such a magnetic field effect was not found during anodizing in oxalic and sulfamic acid. The pore intervals were decreased by ca. 17% in oxalic acid. These findings were attributed to variations in electronic properties of the anodic oxide films formed in various electrolytes and interpreted on the basis of the influence of trapped electrons on the mobility of ions migrating during the film growth. The spin dependent tunneling of electrons into the surface layer of the oxide under the magnetic field could be responsible for the shifts of the current transients to lower potentials during re-anodizing of heat-treated oxalic and phosphoric acid alumina films.

  9. A novel fiber-optic temperature sensor based on high temperature-dependent optical properties of ZnO film on sapphire fiber-ending

    International Nuclear Information System (INIS)

    Cai Pinggen; Zhen Dong; Xu Xiaojun; Liu Yulin; Chen Naibo; Wei Gaorao; Sui Chenghua

    2010-01-01

    We report the growth of high-quality thin films of ZnO via an electron-beam evaporation technique. Studies of the transmittance spectra have revealed a sharp optical absorption edge and a significant redshift. After annealing at 673 K, the ZnO films again demonstrated a sharp absorption edge in a manner similar to the as-deposited samples. This illustrates the excellent thermal stability of the thin films and, as such, demonstrates their potential as fiber-optic temperature sensors. Utilizing the influence of optical absorption spectra at different temperatures, a novel fiber-optic temperature sensor based on this material has been designed and tested. This technique could offer a simple, robust and cost-effective method to be used in high temperature sensing applications.

  10. Optimizing growth conditions for electroless deposition of Au films ...

    Indian Academy of Sciences (India)

    Unknown

    Optimizing growth conditions for electroless deposition of Au films on. Si(111) substrates. BHUVANA and G U KULKARNI*. Chemistry and Physics of Materials Unit and DST Unit on Nanoscience, Jawaharlal Nehru Centre for. Advanced Scientific Research, Jakkur PO, Bangalore 560 064, India. MS received 24 March 2006.

  11. Growth of pentacene on clean and modified gold surfaces

    International Nuclear Information System (INIS)

    Kaefer, Daniel; Ruppel, Lars; Witte, Gregor

    2007-01-01

    The growth and evolution of pentacene films on gold substrates have been studied. By combining complementary techniques including scanning tunneling microscopy, atomic force microscopy, scanning electron microscopy, near-edge x-ray-absorption fine structure, and x-ray diffraction, the molecular orientation, crystalline structure, and morphology of the organic films were characterized as a function of film thickness and growth parameters (temperature and rate) for different gold substrates ranging from Au(111) single crystals to polycrystalline gold. Moreover, the influence of precoating the various gold substrates with self-assembled monolayers (SAM's) of organothiols with different chemical terminations has been studied. On bare gold the growth of pentacene films is characterized by a pronounced dewetting while the molecular orientation within the resulting crystalline three-dimensional islands depends distinctly on the roughness and cleanliness of the substrate surface. After completion of the first wetting layer where molecules adopt a planar orientation parallel to the surface the molecules continue to grow in a tilted fashion: on Au(111) the long molecular axis is oriented parallel to the surface while on polycrystalline gold it is upstanding oriented and thus parallels the crystalline orientation of pentacene films grown on SiO 2 . On SAM pretreated gold substrates the formation of a wetting layer is effectively suppressed and pentacene grows in a quasi-layer-by-layer fashion with an upstanding orientation leading to rather smooth films. The latter growth mode is observed independently of the chemical termination of the SAM's and the roughness of the gold substrate. Possible reasons for the different growth mechanism as well as consequences for the assignment of spectroscopic data of thin pentacene film are discussed

  12. Growth performance and hematology of Djallonké rams fed haulms of four varieties of groundnut (Arachis hypogaea L.

    Directory of Open Access Journals (Sweden)

    Terry Ansah

    2017-12-01

    Full Text Available The study was conducted to assess the chemical composition of the haulms of 4 dual-purpose groundnut (Arachis hypogaea L. varieties and their effects on the growth and hematology of Djallonké rams. The groundnut varieties were ICGV 97049 (Obolo, ICGX SM 87057 (Yenyawoso, RMP 12 (Azivivi and Manipinta. Rams (live weight 15.0 ± 3.0 kg were randomly assigned to 4 sole groundnut haulm meal (GHM treatments, with 4 rams each in an individual pen per treatment (total n = 16 rams. Samples of the groundnut haulms were milled and analyzed for crude protein (CP, neutral detergent fiber (NDF and acid detergent fiber (ADF. The CP concentration was higher (P  0.05 when the Djallonké rams were fed the haulms. However, significant differences were observed in final live weight and average daily live weight gain. Rams fed the Yenyawoso variety had higher (P < 0.05 final live weight and average daily live weight gain compared with those fed Obolo and Azivivi varieties. Consumption of any of the 4 varieties of groundnut haulms by Djallonké rams did not have any harmful effect on their red and white blood cell numbers and hemoglobin concentration. The study revealed that the different varieties of groundnut haulms differ in nutrient composition and also affect the growth performance of the rams. The Yenyawoso variety may be used as a sole diet for fattening Djallonké rams.

  13. Interface-Limited Spherulitic Growth of Hydroxyapatite/Chondroitin Sulfate Composite Enamel-like Films

    Science.gov (United States)

    Ma, Guobin; Xu, Yifei; Wang, Xiyan; Wang, Mu

    2012-02-01

    Understanding and mimicking the growth of hard tissues such as tooth enamel may lead to innovative approaches toward engineering novel functional materials and providing new therapeutics. Up to now, in vitro growth of enamel-like materials is still a great challenge, and the microscopic formation mechanisms are far from well understood. Here we report synthesis of large-scale hydroxyapatite (HAP) and chondroitin sulfate (ChS) composite films by an efficient solution-air interface growth method. The products have the characteristic hierarchical prism structures of enamel and the mechanical properties comparable to dentin. We demonstrate that the films are assembled by spherulites nucleated at the solution surface. The growth of the spherulites is limited by the interfaces between them as well as between the solution and air, leading to the ordered prism structure. The results are beneficial for a clearer understanding of the fundamentals of tooth enamel formation.

  14. Growth of CrTe thin films by molecular-beam epitaxy

    International Nuclear Information System (INIS)

    Sreenivasan, M.G.; Hou, X.J.; Teo, K.L.; Jalil, M.B.A.; Liew, T.; Chong, T.C.

    2006-01-01

    We report the growth of Cr 1-δ Te films on (100) GaAs substrates using ZnTe buffer layers by solid-source molecular-beam epitaxial technique. RHEED patterns indicate a clear structural change during the initial stages of deposition. Temperature-dependent magnetization results reveal that different NiAs-related phases of Cr 1-δ Te can be obtained at different substrate temperatures. By varying the film thickness, a metastable zinc blende structure of CrTe could be obtained at lower substrate temperature

  15. Growth and characterization of magnetite-maghemite thin films by the dip coating method

    International Nuclear Information System (INIS)

    Velásquez, A. A.; Arnedo, A.

    2017-01-01

    We present the process of growth and characterization of magnetite-maghemite thin films obtained by the dip coating method. The thin films were deposited on glass substrates, using a ferrofluid of nanostructured magnetite-maghemite particles as precursor solution. During the growth of the films the following parameters were controlled: number of dips of the substrates, dip velocity of the substrates and drying times. The films were characterized by Atomic Force Microscopy, Scanning Elelectron Microscopy, four-point method for resistance measurement, Room Temperature Mössbauer Spectroscopy and Hall effect. Mössbauer measurements showed the presence of a sextet attributed to maghemite (γ-Fe_2O_3) and two doublets attributed to superparamagnetic magnetite (Fe_3O_4), indicating a distribution of oxidation states of the iron as well as a particle size distribution of the magnetic phases in the films. Atomic force microscopy measurements showed that the films cover quasi uniformly the substrates, existing in them some pores with sub-micron size. Scanning Electron Microscopy measurements showed a uniform structure in the films, with spherical particles with size around 10 nm. Voltage versus current measurements showed an ohmic response of the films for currents between 0 and 100 nA. On the other hand, Hall effect measurements showed a nonlinear response of the Hall voltage with the magnetic flux density applied perpendicular to the plane of the films, however the response is fairly linear for magnetic flux densities between 0.15 and 0.35 T approximately. The results suggest that the films are promising for application as magnetic flux density sensors.

  16. Immune response and growth of Lates calcarifer fed on hydrolized protein-supplemented diet

    Directory of Open Access Journals (Sweden)

    Romi Novriadi

    2015-10-01

    Full Text Available ABSTRACT This experiment was aimed to investigate the effects of protein hydrolysates on growth performance and immune response of the Asian sea bass Lates calcarifer Bloch. The experiment was performed in two different rearing period, namely nursery and grow out by using completely randomized design. Experimental fish were fed with three types of diets and each treatment was repeated three times: a local commercial diet (control, coated or not, with 2%, and 3% of protein hydrolysates. Challenge test was performed with Vibrio parahaemolyticus at a density of 105 sel/mL by using immersion method. The results showed that the the neutrofil, leukocyte and monocyte of the fish fed on protein hydrolisates were significantly higher than those non-supplemented group (P<0.05. Meanwhile, the lymphocyte on the fish treated with hydrolisates showed no difference amongst treatments (P<0.05. The growth performance of Asian sea bass fed on protein hydrolisates significantly improved the total fish weight (g, relative weight gain, specific growth rate, final weight (g and final length (cm in comparison to the control (P<0.05 both at nursery and grow out phase. Higher survival both at the nursery and grow out phase were obtained by the group fed with 3% protein hydrolisates: 97.28±0.18% and 86.0±4.32%. Followed with 2% supplementation level 96.75±0.28% and 78.4±7.7%. The lowest survival was shown by the control group with 93.65±0.13% and 20.1±21.1% from nursery and grow-out phase respectively. Results of challenged test showed that the protein hydrolisates supplementation was able to improve the post-challenged survival and resistency of Asian sea bass against V. parahaemolyticus infection. Fish treated with 3% protein hydrolisates generated higher survival 78,33±2,89%, followed by treatment 2% 73,33±5,77%, and control 31,67±7,64% after five days post immersion (P<0.05. Keywords: Asian sea bass, protein hydrolisates, growth, immune system

  17. Optical properties of organic semiconductor thin films. Static spectra and real-time growth studies

    Energy Technology Data Exchange (ETDEWEB)

    Heinemeyer, Ute

    2009-07-20

    The aim of this work was to establish the anisotropic dielectric function of organic thin films on silicon covered with native oxide and to study their optical properties during film growth. While the work focuses mainly on the optical properties of Diindenoperylene (DIP) films, also the optical response of Pentacene (PEN) films during growth is studied for comparison. Spectroscopic ellipsometry and differential reflectance spectroscopy are used to determine the dielectric function of the films ex-situ and in-situ, i.e. in air and in ultrahigh vacuum. Additionally, Raman- and fluorescence spectroscopy is utilized to characterize the DIP films serving also as a basis for spatially resolved optical measurements beyond the diffraction limit. Furthermore, X-ray reflectometry and atomic force microscopy are used to determine important structural and morphological film properties. The absorption spectrum of DIP in solution serves as a monomer reference. The observed vibronic progression of the HOMO-LUMO transition allows the determination of the Huang-Rhys parameter experimentally, which is a measure of the electronic vibrational coupling. The corresponding breathing modes are measured by Raman spectroscopy. The optical properties of DIP films on native oxide show significant differences compared to the monomer spectrum due to intermolecular interactions. First of all, the thin film spectra are highly anisotropic due to the structural order of the films. Furthermore the Frenkel exciton transfer is studied and the energy difference between Frenkel and charge transfer excitons is determined. Real-time measurements reveal optical differences between interfacial or surface molecules and bulk molecules that play an important role for device applications. They are not only performed for DIP films but also for PEN films. While for DIP films on glass the appearance of a new mode is visible, the spectra of PEN show a pronounced energy red-shift during growth. It is shown how the

  18. Structural and optical properties of titanium dioxide films deposited by reactive magnetron sputtering in pure oxygen plasma

    International Nuclear Information System (INIS)

    Asanuma, T.; Matsutani, T.; Liu, C.; Mihara, T.; Kiuchi, M.

    2004-01-01

    Titanium dioxide (TiO 2 ) thin films were deposited on unheated quartz (SiO 2 ) substrates in 'pure oxygen' plasma by reactive radio-frequency (rf) magnetron sputtering. The structural and optical properties of deposited films were systematically studied by changing the deposition parameters, and it was very recently found that crystalline TiO 2 films grew effectively in pure O 2 atmosphere. For TiO 2 films deposited at a rf power P rf of 200 W, x-ray diffraction patterns show the following features: (a) no diffraction peak was observed at a total sputtering pressure p tot of 1.3 Pa; (b) rutile (110) diffraction was observed at 4.0 Pa, (c) the dominant diffraction was from anatase (101) planes, with additional diffraction from (200), under p tot between 6.7 and 13 Pa. For the deposition at 140 W, however, crystalline films with mixed phases were observed only between 4.0 and 6.7 Pa. The peaks of both the deposition rate and the anatase weight ratio for the films produced at 140 W were found at p tot of approximately 6.7 Pa. This suggests that the nucleation and growth of TiO 2 films were affected by the composition, density, and kinetic energy of the particles impinging on the substrate surface. The optical absorption edge analysis showed that the optical band gap E g and the constant B could sensitively detect the film growth behavior, and determine the film structure and optical absorption. The change in the shape of the fundamental absorption edge is considered to reflect the variation of density and the short-range structural modifications

  19. Feed intake, growth performance and digestibility in goats fed whole corn plant silage and Napier grass

    Directory of Open Access Journals (Sweden)

    Khaing, K.T.

    2015-06-01

    Full Text Available Shortage and inconsistent quality of forage in developing countries are the major constraints to the development of ruminant sector. To overcome these problems, feeding of ruminants with conserved forages is an important feeding strategy to ensure the success of ruminant production in the third world countries. The use of whole corn plant as silage has drawn many attention due to high protein efficiency, relatively high digestible energy and total digestible nutrients. Thus, the objective of this study was to determine feed intake, growth performance and nutrients digestibility in goats fed different inclusion level of whole corn plant silage to Napier grass based diets. Fifteen male Boer cross goats around six months old and approximately 18.54 ? 1.83 kg of body weight were used as experimental animals. The goats were assigned into five treatment groups consisted of different proportions of Napier grass (G and whole plant corn silage (CS ?T1:100/0 G/CS; T2:75/25 G/CS; T3:50/50 G/CS; T4:25/75 G/CS and T5:0/100 G/CS. The increase of corn silage to Napier grass proportion demonstrates increase in dry matter intake and growth performance in the goats. The highest nutrient digestibility was observed in T5:0/100 G/CS and T3:50/50 G/CS. It can be concluded that high proportion of corn silage to grass diets had resulted in increases in feed intake and growth performance of goats. Feeding the animals with T5 and T3 resulted in high nutrient utilization compared to other treatments. However, the highest growth performance was observed in animals that were fed with T5 diets.

  20. The influence of energetic bombardment on the structure formation of sputtered zinc oxide films. Development of an atomistic growth model and its application to tailor thin film properties

    Energy Technology Data Exchange (ETDEWEB)

    Koehl, Dominik

    2011-02-17

    The focus of this work is the investigation of the growth of zinc oxide (ZnO) thin films. It is demonstrated that with a modified, ion beam assisted sputtering (IBAS) process, zinc oxide films can be deposited which exhibit a markedly improved crystalline order. Furthermore, it is demonstrated that intense energetic oxygen ion bombardment can be utilized to change film texture from the typical (002)-self-texture to an a-axis texture where the (002)-planes are perpendicular to the substrate surface. An understanding of the underlying mechanisms is developed which also facilitates a more detailed understanding of the action of ion bombardment during zinc oxide film growth. It is shown that zinc oxide films are susceptible to the influence of ion bombardment particularly in the nucleation regime of growth and that this finding is generally true for all observed structural changes induced by ion bombardment with various species, energies and flux densities. It is demonstrated not only that the initial growth stage plays an important role in the formation of a preferred growth orientation but also that the action of texture forming mechanisms in subsequent growth stages is comparatively weak. (orig.)

  1. The influence of energetic bombardment on the structure formation of sputtered zinc oxide films. Development of an atomistic growth model and its application to tailor thin film properties

    International Nuclear Information System (INIS)

    Koehl, Dominik

    2011-01-01

    The focus of this work is the investigation of the growth of zinc oxide (ZnO) thin films. It is demonstrated that with a modified, ion beam assisted sputtering (IBAS) process, zinc oxide films can be deposited which exhibit a markedly improved crystalline order. Furthermore, it is demonstrated that intense energetic oxygen ion bombardment can be utilized to change film texture from the typical (002)-self-texture to an a-axis texture where the (002)-planes are perpendicular to the substrate surface. An understanding of the underlying mechanisms is developed which also facilitates a more detailed understanding of the action of ion bombardment during zinc oxide film growth. It is shown that zinc oxide films are susceptible to the influence of ion bombardment particularly in the nucleation regime of growth and that this finding is generally true for all observed structural changes induced by ion bombardment with various species, energies and flux densities. It is demonstrated not only that the initial growth stage plays an important role in the formation of a preferred growth orientation but also that the action of texture forming mechanisms in subsequent growth stages is comparatively weak. (orig.)

  2. Quality assurance of alpha-particle dosimetry using peeled-off Gafchromic EBT3® film

    Science.gov (United States)

    Ng, C. Y. P.; Chun, S. L.; Yu, K. N.

    2016-08-01

    A novel alpha-particle dosimetry technique using Gafchromic EBT3 film has recently been proposed for calibrating the activity of alpha-emitting radiopharmaceuticals. In the present paper, we outlined four measures which could further help assure the quality of the method. First, we suggested an alternative method in fabricating the peeled-off EBT3 film. Films with a chosen size were cut from the original films and all the edges were sealed with silicone. These were immersed into deionized water for 19 d and the polyester covers of the EBT3 films could then be easily peeled off. The active layers in these peeled-off EBT3 films remained intact, and these films could be prepared reproducibly with ease. Second, we proposed a check on the integrity of the peeled-off film by comparing the responses of the pristine and peeled-off EBT3 films to the same X-ray irradiation. Third, we highlighted the importance of scanning directions of the films. The ;landscape; and ;portrait; scanning directions were defined as the scanning directions perpendicular and parallel to the long edge of the original EBT3 films, respectively. Our results showed that the responses were different for different scanning directions. As such, the same scanning direction should be used every time. Finally, we cautioned the need to confirm the uniformity of the alpha-particle source used for calibration. Radiochromic films are well known for their capability of providing two-dimensional dosimetric information. As such, EBT3 films could also be conveniently used to check the uniformity of the alpha-particle source.

  3. Controlled Growth of Ultrathin Film of Organic Semiconductors by Balancing the Competitive Processes in Dip-Coating for Organic Transistors.

    Science.gov (United States)

    Wu, Kunjie; Li, Hongwei; Li, Liqiang; Zhang, Suna; Chen, Xiaosong; Xu, Zeyang; Zhang, Xi; Hu, Wenping; Chi, Lifeng; Gao, Xike; Meng, Yancheng

    2016-06-28

    Ultrathin film with thickness below 15 nm of organic semiconductors provides excellent platform for some fundamental research and practical applications in the field of organic electronics. However, it is quite challenging to develop a general principle for the growth of uniform and continuous ultrathin film over large area. Dip-coating is a useful technique to prepare diverse structures of organic semiconductors, but the assembly of organic semiconductors in dip-coating is quite complicated, and there are no reports about the core rules for the growth of ultrathin film via dip-coating until now. In this work, we develop a general strategy for the growth of ultrathin film of organic semiconductor via dip-coating, which provides a relatively facile model to analyze the growth behavior. The balance between the three direct factors (nucleation rate, assembly rate, and recession rate) is the key to determine the growth of ultrathin film. Under the direction of this rule, ultrathin films of four organic semiconductors are obtained. The field-effect transistors constructed on the ultrathin film show good field-effect property. This work provides a general principle and systematic guideline to prepare ultrathin film of organic semiconductors via dip-coating, which would be highly meaningful for organic electronics as well as for the assembly of other materials via solution processes.

  4. Growth of high Tc Bi-Sr-Ca-Cu-O thick films

    International Nuclear Information System (INIS)

    Chaudhry, Sangeeta; Khare, Neeraj; Gupta, A.K.; Nagpal, K.C.; Ojha, V.N.; Reddy, G.S.N.; Tomar, V.S.

    1991-01-01

    Thick films of Bi-Sr-Ca-Cu-O were deposited on (100) MgO substrates by screen-printing technique with the starting composition 1112. To attain the superconducting state, the films were subjected to two-step heat-treatment. R-T and XRD have been studied for films annealed at different durations of the second step. Initially T c (R=O) increased from 77 to 103 K as the annealing duration was increased after which T c decreased. Kinetics of the growth of high T c phase is discussed in the light of results. (author). 7 refs., 2 figs., 1 tab

  5. Growth of conductive HfO{sub 2-x} thin films by reactive molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Hildebrandt, Erwin; Kurian, Jose; Alff, Lambert [Institut fuer Materialwissenschaft, TU Darmstadt (Germany); Kleebe, Hans-Joachim [Institut fuer Angewandte Geowissenschaften, TU Darmstadt (Germany)

    2009-07-01

    Thin films of oxygen deficient hafnium oxide were grown on single crystal c-cut and r-cut sapphire substrates by reactive molecular beam epitaxy. The oxidation conditions during growth were varied within a wide range using RF-activated oxygen. Hafnium oxide thin films were characterized using X-ray diffraction, resistivity measurements ({rho}-T) and transmission electron microscopy (TEM). The results show a dramatic increase in conductivity of the deposited oxygen deficient hafnium oxide thin films with decreasing oxidation conditions during growth. The electrical properties of deficient hafnium oxide thin films varied from insulating over semiconducting to conducting. X-ray diffraction data as well as TEM data rule out the possibility of conductivity due to metallic hafnium.

  6. Essential oils improved weight gain, growth and feed efficiency of young dairy calves fed 18 or 20% crude protein starter diets.

    Science.gov (United States)

    Kazemi-Bonchenari, M; Falahati, R; Poorhamdollah, M; Heidari, S R; Pezeshki, A

    2018-01-17

    The objective was to evaluate interactions between starter protein (180 vs. 200 g/kg, DM basis) and a mixture of essential oils (EOs; containing thymol, eugenol, vanillin, limonene and guaiacol) on growth, metabolic and ruminal functions of Holstein dairy calves. In a completely randomized 2 × 2 factorial design, 48 calves, 3 days old (averaging BW 42.7 ± 1.9 kg), were allocated into groups fed the following diets: (i) 180 g/kg CP with no EO (180P-NEO); (ii) 180 g/kg CP with EO (180P-EO); (iii) 200 g/kg CP with no EO (200P-NEO); and (iv) 200 g/kg CP with EO (200P-EO). The EO was supplemented as 1 g/kg of starter DM. Calves were fed ad libitum starter diet and were weaned at day 59 of age, but diets continued until day 80. There were no interactive effects of CP and EO on intake and growth. Pre-weaning feed efficiency tended to be increased for 200P-EO (p = .09). Average daily gain and feed efficiency during pre-weaning period as well as weaning weight were increased (p calves-fed EO (p = .05) and was lower in those fed 180P vs. 200P (p feed efficiency of dairy calves, irrespective of dietary protein content. © 2018 Blackwell Verlag GmbH.

  7. Mechanistic Insights into Growth of Surface‐Mounted Metal‐Organic Framework Films Resolved by Infrared (Nano‐) Spectroscopy

    OpenAIRE

    Delen, Guusje; Ristanović, Zoran; Mandemaker, Laurens D. B.; Weckhuysen, Bert M.

    2017-01-01

    Abstract Control over assembly, orientation, and defect‐free growth of metal‐organic framework (MOF) films is crucial for their future applications. A layer‐by‐layer approach is considered a suitable method to synthesize highly oriented films of numerous MOF topologies, but the initial stages of the film growth remain poorly understood. Here we use a combination of infrared (IR) reflection absorption spectroscopy and atomic force microscopy (AFM)‐IR imaging to investigate the assembly and gro...

  8. The growth of GaN films by alternate source gas supply hot-mesh CVD method

    Energy Technology Data Exchange (ETDEWEB)

    Komae, Yasuaki; Saitou, Takeshi [Nagaoka University of Technology, Nagaoka 940-2188 (Japan); Suemitsu, Maki; Ito, Takashi [Center of Interdisciplinary Research, Tohoku University, Sendai 980-8578 (Japan); Endoh, Tetsuo [Research Institute of Electrical Communication, Tohoku University, Sendai 980-8577 (Japan); Nakazawa, Hideki [Faculty of Science and Technology, Hirosaki University, Hirosaki 036-8561 (Japan); Narita, Yuzuru [Faculty of Engineering, Yamagata University, Yonezawa 992-8510 (Japan); Takata, Masasuke; Akahane, Tadashi [Nagaoka University of Technology, Nagaoka 940-2188 (Japan); Yasui, Kanji, E-mail: kyasui@vos.nagaokaut.ac.j [Nagaoka University of Technology, Nagaoka 940-2188 (Japan)

    2009-04-30

    Gallium nitride (GaN) films and Aluminium nitride (AlN) layers were deposited on SiC/Si (111) substrates by an alternating source gas supply or an intermittent supply of a source gas such as ammonia (NH{sub 3}), trimethylgallium (TMG) or trimethylaluminum (TMA) in a hot-mesh chemical vapor deposition (CVD) apparatus. The AlN layer was deposited as a buffer layer using NH{sub 3} and TMA on a SiC layer grown by carbonization on Si substrates using propane (C{sub 3}H{sub 8}). GaN films were grown on an AlN layer by a reaction between NH{sub x} radicals generated on a ruthenium (Ru) coated tungsten (W)-mesh and TMG molecules. An alternating source gas supply or an intermittent supply of one of the source gases during the film growth are expected to be effective for the suppression of gas phase reactions and for the enhancement of precursor migration on the substrate surface. By the intermittent supply of alkylmetal gas only during the growth of the AlN layer, the defect generation in the GaN films was reduced. GaN film growth by intermittent supply on an AlN buffer layer, however, did not lead to the improvement of the film quality.

  9. Observation of ultraslow stress release in silicon nitride films on CaF2

    International Nuclear Information System (INIS)

    Guo, Tianyi; Deen, M. Jamal; Xu, Changqing; Fang, Qiyin; Selvaganapathy, P. Ravi; Zhang, Haiying

    2015-01-01

    Silicon nitride thin films are deposited by plasma-enhanced chemical vapor deposition on (100) and (111) CaF 2 crystalline substrates. Delaminated wavy buckles formed during the release of internal compressive stress in the films and the stress releasing processes are observed macroscopically and microscopically. The stress release patterns start from the substrate edges and propagate to the center along defined directions aligned with the crystallographic orientations of the substrate. The stress releasing velocity of SiN x film on (111) CaF 2 is larger than that of SiN x film with the same thickness on (100) CaF 2 . The velocities of SiN x film on both (100) and (111) CaF 2 increase with the film thickness. The stress releasing process is initiated when the films are exposed to atmosphere, but it is not a chemical change from x-ray photoelectron spectroscopy

  10. Photoreflectance study of the near-band-edge transitions of chemical vapor deposition-grown mono- and few-layer MoS{sub 2} films

    Energy Technology Data Exchange (ETDEWEB)

    Lin, Kuang-I, E-mail: kilin@mail.ncku.edu.tw [Center for Micro/Nano Science and Technology, National Cheng Kung University, Tainan 70101, Taiwan (China); Chen, Yen-Jen; Wang, Bo-Yan; Cheng, Yung-Chen [Department of Materials Science, National University of Tainan, Tainan 70005, Taiwan (China); Chen, Chang-Hsiao, E-mail: chsiaoc@fcu.edu.tw [Department of Automatic Control Engineering, Feng Chia University, Taichung 40724, Taiwan (China)

    2016-03-21

    Room-temperature photoreflectance (PR) and reflectance (R) spectroscopy are utilized to investigate the near-band-edge transitions of molybdenum disulfide (MoS{sub 2}) thin films grown on sapphire substrates by a hot-wall chemical vapor deposition system. The layer thickness and optical properties of the MoS{sub 2} thin films are confirmed by Raman spectroscopy, atomic force microscope, and photoluminescence (PL) analysis. The B exciton shows relatively weak PL intensity in comparing with the A exciton even for monolayer MoS{sub 2} films. In the R spectrum of few‐layer MoS{sub 2}, it is not possible to clearly observe exciton related features. The PR spectra have two sharp, derivative-like features on a featureless background. Throughout the PR lineshape fitting, the transition energies are designated as the A and B excitons at the K-point of the Brillouin zone, but at room temperature there seems to be no distinguishable feature corresponding to an H‐point transition for the mono- and few-layer MoS{sub 2} films unlike in bulk. These transition energies are slightly larger than those obtained by PL, which is attributed to the Stokes shifts related to doping level. The obtained values of valence-band spin-orbit splitting are in good agreement with those from other experimental methods. By comparing the PR lineshapes, the dominant modulation mechanism is attributed to variations of the exciton transition energies due to change in the built-in electric field. On the strength of this study, PR spectroscopy is demonstrated as a powerful technique for characterizing the near-band-edge transitions of MoS{sub 2} from monolayer to bulk.

  11. In situ growth of Co nanofibers in In2O3-SnO2 matrix during sputtering deposition

    International Nuclear Information System (INIS)

    Echigoya, Jun-ichi; Sano, Junichi

    2006-01-01

    Co-sputtering onto (001) cubic zirconia from a target of indium tin oxide (ITO) partially covered by cobalt (Co) was carried out at substrate temperatures of 470-770 K in order to investigate the growth of Co nanofibers. During film growth, Co forms fibers in the growth direction in the single-crystalline ITO matrix. The cross section of the Co fibers, the size of which depends on the substrate temperature, was a rectangle with an edge 1-5 nm in length. The edge length of the Co fiber increased with the increase of the substrate temperature. The present method is attractive for application to produce magnetic recording media

  12. Growth, etching, and stability of sputtered ZnO:Al for thin-film silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Owen, Jorj Ian

    2011-07-01

    Aluminum-doped zinc oxide (ZnO:Al) can fulfill many requirements in thin-film solar cells, acting as (1) a transparent contact through which the incident light is transmitted, (2) part of the back reflector, and (3) a source of light scattering. Magnetron sputtered ZnO:Al thin-films are highly transparent, conductive, and are typically texturized by post-deposition etching in a dilute hydrochloric acid (HCl) solution to achieve light scattering. The ZnO:Al thin-film electronic and optical properties, as well as the surface texture after etching, depend on the deposition conditions and the post-deposition treatments. Despite having been used in thin-film solar cells for more than a decade, many aspects regarding the growth, effects of heat treatments, environmental stability, and etching of sputtered ZnO:Al are not fully understood. This work endeavors to further the understanding of ZnO:Al for the purpose improving silicon thin-film solar cell efficiency and reducing ZnO:Al production costs. With regard to the growth of ZnO:Al, the influence of various deposition conditions on the resultant electrical and structural properties and their evolution with film thickness were studied. The surface electrical properties extracted from a multilayer model show that while carrier concentration of the surface layer saturates already at film thickness of 100 nm, the surface mobility continues to increases with film thickness, and it is concluded that electronic transport across grain boundaries limits mobility in ZnO:Al thin films. ZnO:Al deposited onto a previously etched ZnO:Al surface grows epitaxially, preserving both the original orientation and grain structure. Further, it is determined that a typical ZnO:Al used in thin-film silicon solar cells grows Zn-terminated on glass substrates. Concerning the affects of heat treatments and stability, it is demonstrated that a layer of amorphous silicon can protect ZnO:Al from degradation during annealing, and the mobility of Zn

  13. Comparative Review on Thin Film Growth of Iron-Based Superconductors

    Directory of Open Access Journals (Sweden)

    Yoshinori Imai

    2017-07-01

    Full Text Available Since the discovery of the novel iron-based superconductors, both theoretical and experimental studies have been performed intensively. Because iron-based superconductors have a smaller anisotropy than high-Tc cuprates and a high superconducting transition temperature, there have been a lot of researchers working on the film fabrication of iron-based superconductors and their application. Accordingly, many novel features have been reported in the films of iron-based superconductors, for example, the fabrication of the epitaxial film with a higher Tc than bulk samples, the extraction of the metastable phase which cannot be obtained by the conventional solid state reaction, and so on. In this paper, we review the progress of research on thin film fabrications of iron-based superconductors, especially the four categories: LnFeAs(O,F (Ln = Lanthanide, AEFe2As2 (AE = Alkaline-earth metal, FeCh (Ch = Chalcogen, and FeSe monolayer. Furthermore, we focus on two important topics in thin films of iron-based superconductors; one is the substrate material for thin film growth on the iron-based superconductors, and the other is the whole phase diagram in FeSe1-xTex which can be obtained only by using film-fabrication technique.

  14. Investigation of growth, coverage and effectiveness of plasma assisted nano-films of fluorocarbon

    International Nuclear Information System (INIS)

    Joshi, Pratik P.; Pulikollu, Rajasekhar; Higgins, Steven R.; Hu Xiaoming; Mukhopadhyay, S.M.

    2006-01-01

    Plasma-assisted functional films have significant potential in various engineering applications. They can be tailored to impart desired properties by bonding specific molecular groups to the substrate surface. The aim of this investigation was to develop a fundamental understanding of the atomic level growth, coverage and functional effectiveness of plasma nano-films on flat surfaces and to explore their application-potential for complex and uneven shaped nano-materials. In this paper, results on plasma-assisted nano-scale fluorocarbon films, which are known for imparting inertness or hydrophobicity to the surface, will be discussed. The film deposition was studied as a function of time on flat single crystal surfaces of silicon, sapphire and graphite, using microwave plasma. X-ray photoelectron spectroscopy (XPS) was used for detailed study of composition and chemistry of the substrate and coating atoms, at all stages of deposition. Atomic force microscopy (AFM) was performed in parallel to study the coverage and growth morphology of these films at each stage. Combined XPS and AFM results indicated complete coverage of all the substrates at the nanometer scale. It was also shown that these films grew in a layer-by-layer fashion. The nano-films were also applied to complex and uneven shaped nano-structured and porous materials, such as microcellular porous foam and nano fibers. It was seen that these nano-films can be a viable approach for effective surface modification of complex or uneven shaped nano-materials

  15. Growth and surface characterization of sputter-deposited molybdenum oxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Ramana, Chintalapalle V.; Atuchin, Victor V.; Kesler, V. G.; Kochubey, V. A.; Pokrovsky, L. D.; Shutthanandan, V.; Becker, U.; Ewing, Rodney C.

    2007-04-15

    Molybdenum oxide thin films were produced by magnetron sputtering using a molybdenum (Mo) target. The sputtering was performed in a reactive atmosphere of argon-oxygen gas mixture under varying conditions of substrate temperature (Ts) and oxygen partial pressure (pO2). The effect of Ts and pO2 on the growth and microstructure of molybdenum oxide films was examined in detail using reflection high-energy electron diffraction (RHEED), Rutherford backscattering spectrometry (RBS), energy dispersive X-ray spectrometry (EDS), X-ray photoelectron spectroscopy (XPS), and scanning electron microscopy (SEM) measurements. The analyses indicate that the effect of Ts and pO2 on the microstructure and phase of the grown molybdenum oxide thin films is remarkable. RHEED and RBS results indicate that the films grown at 445 *C under 62.3% O2 pressure were stoichiometric and polycrystalline MoO3. Films grown at lower pO2 were nonstoichiometric MoOx films with the presence of secondary phase. The microstructure of the grown Mo oxide films is discussed and conditions were optimized to produce phase pure, stoichiometric, and highly textured polycrystalline MoO3 films.

  16. Growth Performance, Carcass Characteristics and Meat Yield of Boer Goats Fed Diets Containing Leaves or Whole Parts of

    Directory of Open Access Journals (Sweden)

    A. L. Yusuf

    2014-04-01

    Full Text Available The study was conducted to determine the effect of feeding diets containing Andrographis paniculata leaves (APL, whole Andrographis paniculata plant (APWP and a control without Andrographis paniculata (AP0, on growth performance, carcass characteristics and meat yield of 24 intact Boer bucks. The results obtained indicated that inclusion of Andrographis paniculata significantly improved feed intake, weight gain, feed efficiency and live weight. The ratios of carcass to fat, lean to bone, lean to fat, and composition of meat were also improved. In addition, there were significant differences (p<0.05 between the dietary treatments in dressing percentage and chilling loss. Goats fed on AP0 (control had significantly higher proportions of fat and bone, as well as thicker back fat than the supplemented animals (APL and APWP. Higher gut fill in animals fed Andrographis paniculata suggested slow rate of digestion, which could have improved utilization and absorption of nutrients by the animals. Goats fed Andrographis paniculata also produced higher meat yield and relatively lower fat contents (p<0.05.

  17. Growth and characterization of magnetite-maghemite thin films by the dip coating method

    Energy Technology Data Exchange (ETDEWEB)

    Velásquez, A. A., E-mail: avelas26@eafit.edu.edu.co; Arnedo, A. [Universidad EAFIT, Grupo de Electromagnetismo Aplicado (Colombia)

    2017-11-15

    We present the process of growth and characterization of magnetite-maghemite thin films obtained by the dip coating method. The thin films were deposited on glass substrates, using a ferrofluid of nanostructured magnetite-maghemite particles as precursor solution. During the growth of the films the following parameters were controlled: number of dips of the substrates, dip velocity of the substrates and drying times. The films were characterized by Atomic Force Microscopy, Scanning Elelectron Microscopy, four-point method for resistance measurement, Room Temperature Mössbauer Spectroscopy and Hall effect. Mössbauer measurements showed the presence of a sextet attributed to maghemite (γ-Fe{sub 2}O{sub 3}) and two doublets attributed to superparamagnetic magnetite (Fe{sub 3}O{sub 4}), indicating a distribution of oxidation states of the iron as well as a particle size distribution of the magnetic phases in the films. Atomic force microscopy measurements showed that the films cover quasi uniformly the substrates, existing in them some pores with sub-micron size. Scanning Electron Microscopy measurements showed a uniform structure in the films, with spherical particles with size around 10 nm. Voltage versus current measurements showed an ohmic response of the films for currents between 0 and 100 nA. On the other hand, Hall effect measurements showed a nonlinear response of the Hall voltage with the magnetic flux density applied perpendicular to the plane of the films, however the response is fairly linear for magnetic flux densities between 0.15 and 0.35 T approximately. The results suggest that the films are promising for application as magnetic flux density sensors.

  18. An X-ray absorption near-edge structure (XANES) study of the Sn L_3 edge in zirconium alloy oxide films formed during autoclave corrosion

    International Nuclear Information System (INIS)

    Hulme, Helen; Baxter, Felicity; Babu, R. Prasath; Denecke, Melissa A.; Gass, Mhairi; Steuwer, Axel; Norén, Katarina; Carlson, Stefan; Preuss, Michael

    2016-01-01

    Highlights: • Characterisation of tin speciation in zirconium alloy metal and oxide films using Sn L_3-XANES. • Chemical environment of tin in Zircaloy-4 and ZIRLO™ oxide films shown to be similar. • Tin in the oxide films is present in both the di- and tetravalent states and oxidises progressively with oxide-layer growth. - Abstract: Application of Sn L_3-XANES to study the oxidation state of alloying additions of tin (1–1.2 wt%) in <2 μm oxide layers formed on nuclear grade zirconium alloy has been demonstrated. Data obtained for metallic and corroded ZIRLO™ (1 wt% Sn) and Zircaloy-4 (1.2 wt% Sn) indicate tin has a similar chemical speciation in both metal alloys but this differs in the oxidised surface layers. By recording XANES at various incident angles to vary the photon penetration depth and amount of the oxide layer probed in the measurement, the authors found evidence that the oxidation of tin progresses with increasing oxide thickness.

  19. Low-temperature growth and electronic structures of ambipolar Yb-doped zinc tin oxide transparent thin films

    Science.gov (United States)

    Oh, Seol Hee; Ferblantier, Gerald; Park, Young Sang; Schmerber, Guy; Dinia, Aziz; Slaoui, Abdelilah; Jo, William

    2018-05-01

    The compositional dependence of the crystal structure, optical transmittance, and surface electric properties of the zinc tin oxide (Zn-Sn-O, shortened ZTO) thin films were investigated. ZTO thin films with different compositional ratios were fabricated on glass and p-silicon wafers using radio frequency magnetron sputtering. The binding energy of amorphous ZTO thin films was examined by a X-ray photoelectron spectroscopy. The optical transmittance over 70% in the visible region for all the ZTO films was observed. The optical band gap of the ZTO films was changed as a result of the competition between the Burstein-Moss effect and renormalization. An electron concentration in the films and surface work function distribution were measured by a Hall measurement and Kelvin probe force microscopy, respectively. The mobility of the n- and p-type ZTO thin films have more than 130 cm2/V s and 15 cm2/V s, respectively. We finally constructed the band structure which contains band gap, work function, and band edges such as valence band maximum and conduction band minimum of ZTO thin films. The present study results suggest that the ZTO thin film is competitive compared with the indium tin oxide, which is a representative material of the transparent conducting oxides, regarding optoelectronic devices applications.

  20. Modeling growth kinetics of thin films made by atomic layer deposition in lateral high-aspect-ratio structures

    Science.gov (United States)

    Ylilammi, Markku; Ylivaara, Oili M. E.; Puurunen, Riikka L.

    2018-05-01

    The conformality of thin films grown by atomic layer deposition (ALD) is studied using all-silicon test structures with long narrow lateral channels. A diffusion model, developed in this work, is used for studying the propagation of ALD growth in narrow channels. The diffusion model takes into account the gas transportation at low pressures, the dynamic Langmuir adsorption model for the film growth and the effect of channel narrowing due to film growth. The film growth is calculated by solving the diffusion equation with surface reactions. An efficient analytic approximate solution of the diffusion equation is developed for fitting the model to the measured thickness profile. The fitting gives the equilibrium constant of adsorption and the sticking coefficient. This model and Gordon's plug flow model are compared. The simulations predict the experimental measurement results quite well for Al2O3 and TiO2 ALD processes.

  1. Surfactant-mediated growth of ultrathin Ge and Si films and their interfaces: Interference-enhanced Raman study

    OpenAIRE

    Kanakaraju, S; Sood, AK; Mohan, S

    2000-01-01

    We report on the growth and interfaces of ultrathin polycrystalline Ge and Si films when they are grown on each other using ion beam sputter deposition with and without surfactant at different growth temperatures, studied using interference enhanced Raman spectroscopy. Ge films grown on Si without surfactant show Ge segregation at the interfaces forming an alloy of GexSi1-x as indicated by the Ge-Si Raman mode. However, use of Sb as surfactant strongly suppresses the intermixing. Also Si film...

  2. Crystallographic analysis of the solid-state dewetting of polycrystalline gold film using automated indexing in a transmission electron microscope

    Directory of Open Access Journals (Sweden)

    S. A. Jang

    2015-12-01

    Full Text Available We analyzed the effect of crystallographic anisotropy on the morphological evolution of a 12-nm-thick gold film during solid-state dewetting at high temperatures using automated indexing tool in a transmission electron microscopy. Dewetting initiated at grain-boundary triple junctions adjacent to large grains resulting from abnormal grain growth driven by (111 texture development. Voids at the junctions developed shapes with faceted edges bounded by low-index crystal planes. The kinetic mobility of the edges varied with the crystal orientation normal to the edges, with a predominance of specific edges with the slowest retraction rates as the annealing time was increased.

  3. Vanadium and molybdenum oxide thin films on Au(111). Growth and surface characterization

    Energy Technology Data Exchange (ETDEWEB)

    Guimond, Sebastien

    2009-06-04

    The growth and the surface structure of well-ordered V{sub 2}O{sub 3}, V{sub 2}O{sub 5} and MoO{sub 3} thin films have been investigated in this work. These films are seen as model systems for the study of elementary reaction steps occurring on vanadia and molybdena-based selective oxidation catalysts. It is shown that well-ordered V{sub 2}O{sub 3}(0001) thin films can be prepared on Au(111). The films are terminated by vanadyl groups which are not part of the V{sub 2}O{sub 3} bulk structure. Electron irradiation specifically removes the oxygen atoms of the vanadyl groups, resulting in a V-terminated surface. The fraction of removed vanadyl groups is controlled by the electron dose. Such surfaces constitute interesting models to probe the relative role of both the vanadyl groups and the undercoordinated V ions at the surface of vanadia catalysts. The growth of well-ordered V{sub 2}O{sub 5}(001) and MoO{sub 3}(010) thin films containing few point defects is reported here for the first time. These films were grown on Au(111) by oxidation under 50 mbar O{sub 2} in a dedicated high pressure cell. Contrary to some of the results found in the literature, the films are not easily reduced by annealing in UHV. This evidences the contribution of radiation and surface contamination in some of the reported thermal reduction experiments. The growth of ultrathin V{sub 2}O{sub 5} and MoO{sub 3} layers on Au(111) results in formation of interface-specific monolayer structures. These layers are coincidence lattices and they do not correspond to any known oxide bulk structure. They are assumed to be stabilized by electronic interaction with Au(111). Their formation illustrates the polymorphic character and the ease of coordination units rearrangement which are characteristic of both oxides. The formation of a second layer apparently precedes the growth of bulk-like crystallites for both oxides. This observation is at odds with a common assumption that crystals nucleate as soon as a

  4. Vanadium and molybdenum oxide thin films on Au(111). Growth and surface characterization

    International Nuclear Information System (INIS)

    Guimond, Sebastien

    2009-01-01

    The growth and the surface structure of well-ordered V 2 O 3 , V 2 O 5 and MoO 3 thin films have been investigated in this work. These films are seen as model systems for the study of elementary reaction steps occurring on vanadia and molybdena-based selective oxidation catalysts. It is shown that well-ordered V 2 O 3 (0001) thin films can be prepared on Au(111). The films are terminated by vanadyl groups which are not part of the V 2 O 3 bulk structure. Electron irradiation specifically removes the oxygen atoms of the vanadyl groups, resulting in a V-terminated surface. The fraction of removed vanadyl groups is controlled by the electron dose. Such surfaces constitute interesting models to probe the relative role of both the vanadyl groups and the undercoordinated V ions at the surface of vanadia catalysts. The growth of well-ordered V 2 O 5 (001) and MoO 3 (010) thin films containing few point defects is reported here for the first time. These films were grown on Au(111) by oxidation under 50 mbar O 2 in a dedicated high pressure cell. Contrary to some of the results found in the literature, the films are not easily reduced by annealing in UHV. This evidences the contribution of radiation and surface contamination in some of the reported thermal reduction experiments. The growth of ultrathin V 2 O 5 and MoO 3 layers on Au(111) results in formation of interface-specific monolayer structures. These layers are coincidence lattices and they do not correspond to any known oxide bulk structure. They are assumed to be stabilized by electronic interaction with Au(111). Their formation illustrates the polymorphic character and the ease of coordination units rearrangement which are characteristic of both oxides. The formation of a second layer apparently precedes the growth of bulk-like crystallites for both oxides. This observation is at odds with a common assumption that crystals nucleate as soon as a monolayer is formed dur-ing the preparation of supported vanadia

  5. Selection of chemically defined media for CHO cell fed-batch culture processes

    NARCIS (Netherlands)

    Pan, X.; Streefland, M.; Dalm, C.; Wijffels, R.H.; Martens, D.E.

    2017-01-01

    Two CHO cell clones derived from the same parental CHOBC cell line and producing the same monoclonal antibody (BC-G, a low producing clone; BC-P, a high producing clone) were tested in four basal media in all possible combinations with three feeds (=12 conditions) in fed-batch cultures.
    Higher

  6. In situ growth of p and n-type graphene thin films and diodes by pulsed laser deposition

    KAUST Repository

    Sarath Kumar, S. R.

    2013-11-07

    We report the in situ growth of p and n-type graphene thin films by ultraviolet pulsed laser deposition in the presence of argon and nitrogen, respectively. Electron microscopy and Raman studies confirmed the growth, while temperature dependent electrical conductivity and Seebeck coefficient studies confirmed the polarity type of graphene films. Nitrogen doping at different sites of the honeycomb structure, responsible for n-type conduction, is identified using X-ray photoelectron spectroscopy, for films grown in nitrogen. A diode-like rectifying behavior is exhibited by p-n junction diodes fabricated using the graphene films.

  7. Influence of deposition parameters on the refractive index and growth rate of diamond-like carbon films

    International Nuclear Information System (INIS)

    Zhang, G.F.; Zheng, X.; Guo, L.J.; Liu, Z.T.; Xiu, N.K.

    1994-01-01

    In order to use diamond-like carbon (DLC) films as protective and antireflection coatings for IR optical materials exposed to hostile environments, an investigation has been systematically conducted on the influence of the deposition parameters on the refractive index and growth rate of DLC films, which are two of the most important parameters in evaluating optical characteristics of antireflection coatings. The experimental results show that both the refractive index and growth rate of DLC films depend strongly on the negative d.c. bias voltage. The refractive index increases with increasing bias voltage and decreases with increasing partial pressure of the hydrocarbon gas and total flow rate of the mixture. The growth rate increases greatly when the bias voltage is larger than a threshold value. The various parameters which influence the structure and properties of DLC films are interrelated. Fourier transform IR spectroscopy results show that the strength of the C-H stretching absorption band in the range 3300-2850 cm -1 is gradually weakened with increasing negative bias voltage and argon concentration. High energy bombardment of the growing film plays an important role in the structure and hence the properties of DLC films. (orig.)

  8. Evaluation of a kinetic model for computer simulation of growth and fermentation by Scheffersomyces (Pichia) stipitis fed D-xylose.

    Science.gov (United States)

    Slininger, P J; Dien, B S; Lomont, J M; Bothast, R J; Ladisch, M R; Okos, M R

    2014-08-01

    Scheffersomyces (formerly Pichia) stipitis is a potential biocatalyst for converting lignocelluloses to ethanol because the yeast natively ferments xylose. An unstructured kinetic model based upon a system of linear differential equations has been formulated that describes growth and ethanol production as functions of ethanol, oxygen, and xylose concentrations for both growth and fermentation stages. The model was validated for various growth conditions including batch, cell recycle, batch with in situ ethanol removal and fed-batch. The model provides a summary of basic physiological yeast properties and is an important tool for simulating and optimizing various culture conditions and evaluating various bioreactor designs for ethanol production. © 2014 Wiley Periodicals, Inc.

  9. Setup for in situ X-ray diffraction studies of thin film growth by magnetron sputtering

    CERN Document Server

    Ellmer, K; Weiss, V; Rossner, H

    2001-01-01

    A novel method is described for the in situ-investigation of nucleation and growth of thin films during magnetron sputtering. Energy dispersive X-ray diffraction with synchrotron light is used for the structural analysis during film growth. An in situ-magnetron sputtering chamber was constructed and installed at a synchrotron radiation beam line with a bending magnet. The white synchrotron light (1-70 keV) passes the sputtering chamber through Kapton windows and hits one of the substrates on a four-fold sample holder. The diffracted beam, observed under a fixed diffraction angle between 3 deg. and 10 deg., is energy analyzed by a high purity Ge-detector. The in situ-EDXRD setup is demonstrated for the growth of tin-doped indium oxide (ITO) films prepared by reactive magnetron sputtering from a metallic target.

  10. Fabrication and optical properties of SnS thin films by SILAR method

    International Nuclear Information System (INIS)

    Ghosh, Biswajit; Das, Madhumita; Banerjee, Pushan; Das, Subrata

    2008-01-01

    Although the fabrication of tin disulfide thin films by SILAR method is quiet common, there is, however, no report is available on the growth of SnS thin film using above technique. In the present work, SnS films of 0.20 μm thickness were grown on glass and ITO substrates by SILAR method using SnSO 4 and Na 2 S solution. The as-grown films were smooth and strongly adherent to the substrate. XRD confirmed the deposition of SnS thin films. Scanning electron micrograph revealed almost equal distribution of the particle size well covered on the surface of the substrate. EDAX showed that as-grown SnS films were slightly rich in tin component while UV-vis transmission spectra exhibited high absorption in the visible region. The intense and sharp emission peaks at 680 and 825 nm (near band edge emission) dominated the photoluminescence spectra

  11. Electronic structure of Cr doped Fe3O4 thin films by X-ray absorption near-edge structure spectroscopy

    Science.gov (United States)

    Chen, Chi-Liang; Dong, Chung-Li; Asokan, Kandasami; Chern, G.; Chang, C. L.

    2018-04-01

    Present study reports the electronic structures of Cr doped Fe3O4 (Fe3-xCrxO4 (0 ≤ x ≤ 3) grown on MgO (100) substrates in the form of thin films fabricated by a plasma-oxygen assisted Molecular Beam Epitaxy (MBE). X-ray absorption near-edge structure (XANES) spectra at Cr & Fe L-, and O K-edges were used to understand the electronic structure: changes in the bonding nature, valence states, and site occupancies. Cr doping in Fe3O4 results in the change of charge transfer, crystal structure, and selective occupation of ions in octahedral and tetrahedral sites. Such change modifies the electrical and magnetic properties due to the covalency of Cr ions. The physical and chemical properties of ferrites are strongly dependent on the lattice site, ion size of dopant, and magnetic nature present at different structural symmetry of the spinel structure.

  12. Defining American Heroes: Analyzing the Metamorphosis of the War Hero in Twentieth Century War Films Using Joseph Campbell's, "Hero's Journey."

    Science.gov (United States)

    Frith, Luci A.

    In "The Hero's Journey" Joseph Campbell identifies the patterns that inform the myths of the "hero" throughout recorded history. By using Campbell's template, this paper examines how the American war hero is portrayed and has been portrayed in film. The paper states that Americans not only define their war heroes in films but…

  13. Growth and characterization of ZnO thin films prepared by electrodeposition technique

    Energy Technology Data Exchange (ETDEWEB)

    Fahoume, M.; Maghfoul, O.; Aggour, M. [L.P.M.C., Faculte des Sciences, Universite Ibn Tofail, BP. 133-14000 Kenitra (Morocco); Hartiti, B. [L.P.M.A.E.R., Faculte des Sciences et Techniques, B.P. 146 Mohammedia (Morocco); Chraibi, F.; Ennaoui, A. [L.P.M., Faculte des Sciences, Universite Mohammed V, BP.1014 Rabat (Morocco)

    2006-06-15

    ZnO thin films were deposited on either indium tin oxide-coated glass or copper substrate by the electrodeposition process, using zinc chloride and flowing air as precursors. The effect of pH on the structural and morphological ZnO films was studied and the optimum deposition conditions have been outlined. The kinetics of the growth of the films have been investigated. We note that the rate of deposition of ZnO in an acidic solution was larger than in a basic solution. The structure of the films was studied using X-ray diffractometry (XRD) and transmission electron microscopy (TEM). The surface morphology and thickness of the films were determined using scanning electron microscopy. The X-ray diffraction analysis shows that the films are polycrystalline with hexagonal crystal structure (zincite) at pH 4. The optical transmittance of ZnO decreases with varying film thickness. The optical energy bandgap was found to be 3.26eV. (author)

  14. Study both films structure and fractal growth in the T-10 tokamak

    International Nuclear Information System (INIS)

    Khimchenko, L.N.; Budaev, V.P.; Guseva, M.I.; Kamneva, S.A.; Kolbasov, B.N.; Kuteev, B.V.; Martynenko, Yu.V.; Svechnikov, N.Yu.; Stankevich, V.G.; Loginov, B.A.; Romanov, P.B.

    2005-01-01

    In the paper results of films growth mechanism study, their internal structure are summarized. The mechanism leading to hydrogen capture effect on the first wall at over dusting stage is stated. Films internal structure have been studied with help of synchrotron radiation, electron paramagnetic resonance, IR reflection spectra, thermal gravimetric methods, spectroscopy in the vision spectrum range and UV vacuum range. Structure of the films surfaces have been examined with help of electron microscopy, probe scanning tunnel and atom-force microscopy, as well as miniature scanning tunnel microscope placed in the T-10 tokamak

  15. Growth of Pb(Ti,Zr)O 3 thin films by metal-organic molecular beam epitaxy

    Science.gov (United States)

    Avrutin, V.; Liu, H. Y.; Izyumskaya, N.; Xiao, B.; Özgür, Ü.; Morkoç, H.

    2009-02-01

    Single-crystal Pb(Zr xTi 1-x)O 3 thin films have been grown on (0 0 1) SrTiO 3 and SrTiO 3:Nb substrates by molecular beam epitaxy using metal-organic source of Zr and two different sources of reactive oxygen—RF plasma and hydrogen-peroxide sources. The same growth modes and comparable structural properties were observed for the films grown with both oxygen sources, while the plasma source allowed higher growth rates. The films with x up to 0.4 were single phase, while attempts to increase x beyond gave rise to the ZrO 2 second phase. The effects of growth conditions on growth modes, Zr incorporation, and phase composition of the Pb(Zr xTi 1-x)O 3 films are discussed. Electrical and ferroelectric properties of the Pb(Zr xTi 1-x)O 3 films of ~100 nm in thickness grown on SrTiO 3:Nb were studied using current-voltage, capacitance-voltage, and polarization-field measurements. The single-phase films show low leakage currents and large breakdown fields, while the values of remanent polarization are low (around 5 μC/cm 2). It was found that, at high sweep fields, the contribution of the leakage current to the apparent values of remanent polarization can be large, even for the films with large electrical resistivity (˜10 8-10 9 Ω cm at an electric filed of 1 MV/cm). The measured dielectric constant ranges from 410 to 260 for Pb(Zr 0.33Ti 0.67)O 3 and from 313 to 213 for Pb(Zr 0.2Ti 0.8)O 3 in the frequency range from 100 to 1 MHz.

  16. Thin film solar cells from earth abundant materials growth and characterization of Cu2(ZnSn)(SSe)4 thin films and their solar cells

    CERN Document Server

    Kodigala, Subba Ramaiah

    2013-01-01

    The fundamental concept of the book is to explain how to make thin film solar cells from the abundant solar energy materials by low cost. The proper and optimized growth conditions are very essential while sandwiching thin films to make solar cell otherwise secondary phases play a role to undermine the working function of solar cells. The book illustrates growth and characterization of Cu2ZnSn(S1-xSex)4 thin film absorbers and their solar cells. The fabrication process of absorber layers by either vacuum or non-vacuum process is readily elaborated in the book, which helps for further developm

  17. Growth Assisted by Glancing Angle Deposition: A New Technique to Fabricate Highly Porous Anisotropic Thin Films.

    Science.gov (United States)

    Sanchez-Valencia, Juan Ramon; Longtin, Remi; Rossell, Marta D; Gröning, Pierangelo

    2016-04-06

    We report a new methodology based on glancing angle deposition (GLAD) of an organic molecule in combination with perpendicular growth of a second inorganic material. The resulting thin films retain a very well-defined tilted columnar microstructure characteristic of GLAD with the inorganic material embedded inside the columns. We refer to this new methodology as growth assisted by glancing angle deposition or GAGLAD, since the material of interest (here, the inorganic) grows in the form of tilted columns, though it is deposited under a nonglancing configuration. As a "proof of concept", we have used silver and zinc oxide as the perpendicularly deposited material since they usually form ill-defined columnar microstructures at room temperature by GLAD. By means of our GAGLAD methodology, the typical tilted columnar microstructure can be developed for materials that otherwise do not form ordered structures under conventional GLAD. This simple methodology broadens significantly the range of materials where control of the microstructure can be achieved by tuning the geometrical deposition parameters. The two examples presented here, Ag/Alq3 and ZnO/Alq3, have been deposited by physical vapor deposition (PVD) and plasma enhanced chemical vapor deposition (PECVD), respectively: two different vacuum techniques that illustrate the generality of the proposed technique. The two type of hybrid samples present very interesting properties that demonstrate the potentiality of GAGLAD. On one hand, the Ag/Alq3 samples present highly optical anisotropic properties when they are analyzed with linearly polarized light. To our knowledge, these Ag/Alq3 samples present the highest angular selectivity reported in the visible range. On the other hand, ZnO/Alq3 samples are used to develop highly porous ZnO thin films by using Alq3 as sacrificial material. In this way, antireflective ZnO samples with very low refractive index and extinction coefficient have been obtained.

  18. Structural characterization of epitaxial YBa2Cu3O7 thin films on step-edge substrates by means of high-resolution electron microscopy

    International Nuclear Information System (INIS)

    Jia, C.L.; Kabius, B.; Urban, K.

    1993-01-01

    The microstructure of YBa 2 Cu 3 O 7 films epitaxially grown on step-edge (0 0 1) SrTiO 3 and LaAlO 3 substrates has been characterized by means of high-resolution electron microscopy. The results indicate a relationship between the microstructure of the film across a step and the angle the step makes with the substrate plane. On a steep, high-angle step, the film grows with its c-axis perpendicular to that of the film on substrate surface so that two grain boundaries are formed. In the upper grain boundary, on the average, a (0 1 3) habit plane alternates with a (1 0 3) habit plane. This alternating structure is caused by twinning in the orthorhombic structure. The lower boundaries consist of a chain of (0 1 3)(0 1 3) and (0 1 0)(0 0 1) type segments exhibiting a tendency to tilt the whole habit plane toward the a-b plane of the flank film. Dislocations, stacking faults and misfit strains were also observed in or close to the boundaries. (orig.)

  19. Growth performance of sea bass fed increasing levels of pea-wheat protein in diets varying in fish meal quality

    Directory of Open Access Journals (Sweden)

    E. Tibaldi

    2010-04-01

    Full Text Available A 11-week trial was carried out to compare the growth performance of sea bass (D. labrax fed six isonitrogenous isocaloric diets where protein from two fish meals of different nutritive value was replaced with graded levels (0, 50 or 75% of a mixture made up by a pea protein concentrate and wheat gluten. Fish meal quality did not affect (P>0.05 weight gain or feed efficiency in fish fed graded levels of plant protein in the diet. Feed intake decreased (P<0.05 as the level of plant protein was increased in the diet but this did not led to impaired growth or feed conversion rate. Protein efficiency and retention were equally improved (P<0.05 only with diets where a poor quality fish meal was substituted by protein rich-plant ingredients. Calculations based on the mass balance of nutrients of sea bass proven the inclusion of a mixture of highly purified plant-protein derivatives in complete diets for the sea bass, to be beneficial in reducing pollution load.

  20. solution growth and characterization of copper oxide thin films ...

    African Journals Online (AJOL)

    Thin films of copper oxide (CuO) were grown on glass slides by using the solution growth technique. Copper cloride (CuCl ) and potassium telluride (K T O ) were used. Buffer 2 2e 3 solution was used as complexing agent. The solid state properties and optical properties were obtained from characterization done using PYE ...

  1. Growth of ZnO nanocrystals in silica by rf co-sputter deposition and post-annealing

    International Nuclear Information System (INIS)

    Siva Kumar, V.V.; Singh, F.; Kumar, Amit; Avasthi, D.K.

    2006-01-01

    Thin films with ZnO nanocrystals in silica were synthesized by rf reactive magnetron co-sputter deposition and post-annealing. The films were deposited from a ZnO/Si composite target in an rf oxygen plasma. The deposited films were annealed in air/vacuum at high temperatures to grow ZnO nanocrystals. The deposited and annealed films were characterized by X-ray diffraction (XRD), fourier transform infrared spectroscopy (FT-IR), uv-vis spectroscopy (UV-VIS) and photoluminescence (PL) measurements. FT-IR results of the films show the vibrational features of Si-O-Si and Zn-O bonds. UV-VIS spectra of the deposited film shows the band edge of ZnO. The XRD results of the films annealed at 750 deg. C and 1000 deg. C indicate the growth of ZnO nanocrystals with average crystallite sizes between 7 nm and 26 nm. PL measurements of the deposited film show a broad visible luminescence peak which can be due to ZnO. These results suggest the growth of ZnO nanocrystals in silica matrix

  2. Effects of local film properties on the nucleation and growth of tin whiskers and hillocks

    Science.gov (United States)

    Sarobol, Pylin

    Whiskers and hillocks grow spontaneously on Pb-free Sn electrodeposited films as a response to thin film stresses. Stress relaxation occurs by atom deposition to specific grain boundaries in the plane of the film, with hillocks being formed when grain boundary migration accompanies growth out of the plane of the film. The implication for whisker formation in electronics is serious: whiskers can grow to be millimeters long, sometimes causing short circuiting between adjacent components and, thereby, posing serious electrical reliability risks. In order to develop more effective whisker mitigation strategies, a predictive physics-based model has been needed. A growth model is developed, based on grain boundary faceting, localized Coble creep, as well as grain boundary sliding for whiskers, and grain boundary sliding with shear induced grain boundary migration for hillocks. In this model of whisker formation, two mechanisms are important: accretion of atoms by Coble creep on grain boundary planes normal to the growth direction inducing a grain boundary shear and grain boundary sliding in the direction of whisker growth. The model accurately captures the importance of the geometry of "surface grains"---shallow grains on film surfaces whose depths are significantly less than their in-plane grain sizes. A critical factor in the analysis is the ratio of the grain boundary sliding coefficient to the in-plane film compressive stress. If the accretion-induced shear stresses are not coupled to grain boundary motion and sliding occurs, a whisker forms. If the shear stress is coupled to grain boundary migration, a hillock forms. Based on this model, long whiskers grow from shallow surface grains with easy grain boundary sliding in the direction of growth. Other observed growth morphologies will be discussed in light of our model. Additional insights into the preferred sites for whisker and hillock growth were developed based on elastic anisotropy, local film microstructure

  3. Growth and magnetic structure of La{sub 0.67}Sr{sub 0.33}MnO{sub 3} films

    Energy Technology Data Exchange (ETDEWEB)

    Brown, G.W.; Jia, Q.X.; Peterson, E.J.; Hristova, D.K.; Hundley, M.F.; Thompson, J.D.; Maggiore, C.J.; Tesmer, J.; Hawley, M.E.

    1997-08-01

    Growth of LaMnO{sub 3} films that exhibit colossal magnetoresistance (CMR) has concentrated heavily on Ca doped materials. However, since the 33% Sr doped films are ferromagnetic at room temperature, they are ideal candidates for dual growth-magnetic structure studies using scanned probe techniques. In this study, interest was focused on the relations between growth/processing parameters, film morphology, and electronic/magnetic properties. In addition, films were grown on both LaAlO{sub 3} (LAO) and SrTiO{sub 3} (STO) to examine the results of stress induced by different substrate mismatches. La{sub 0.67}Sr{sub 0.33}MnO{sub 3} (LSMO) was grown using pulsed laser deposition (PLD) at temperatures between 500 C and 800 C. The film microstructure, crystallinity, and magnetic and electrical properties were characterized by room temperature scanning tunneling microscopy (STM), atomic force microscopy (AFM), magnetic force microscopy (MFM), x-ray diffraction, and temperature dependent transport and magnetization measurements. The growth trends follow those previously reported for Ca doped films. Grains increase in size with increasing temperature and coalesce into extended layers after annealing. Although topographic contributions complicate interpretation of some MFM data, local magnetic structure observed here is generally associated with film defects.

  4. Non-vacuum growth of graphene films using solid carbon source

    International Nuclear Information System (INIS)

    Nguyen, Ba-Son; Lin, Jen-Fin; Perng, Dung-Ching

    2015-01-01

    This study demonstrates that air annealing can grow high-quality graphene films on the surface of polycrystalline nickel film with the help of an effective SiO 2 capping layer. The number of graphene layers can be modulated by the amount of carbon embedded in the Ni film before annealing. Raman analysis results, transmission electron microscopy images, and electron diffraction patterns of the samples confirm that graphene films can be grown in air with an oxygen blocking layer and a 10 °C/s cooling rate in an open-vented rapid thermal annealing chamber or an open tube furnace. The high-quality low-defect air-annealing grown graphene is comparable to commercially available graphene grown via chemical vapor deposition. The proposed graphene growth using air annealing technique is simple and low-cost, making it highly attractive for mass production. It is transfer-free to a silicon substrate and can speed up graphene development, opening up new applications

  5. Solution growth of Tb doped Gd_2O_3 film

    International Nuclear Information System (INIS)

    Ghosh, M.; Pitale, S.; Desai, D.G.; Patra, G.D.; Sen, S.; Gadkari, S.C.

    2016-01-01

    Nanomaterials of Gd_2O_3 have proven applications in medical imaging and cancer therapy due to the presence of element Gd. Also Gd_2O_3 films have been grown by vapor phase method as well as self assembly in solution and studied as a high-k dielectric and efficient luminescence material. Here, we report a method to obtain Tb doped Gd_2O_3 film by solution growth method followed by suitable heat treatment. Uniform films of Tb doped Gadolinium hydroxycarbonate have been deposited on fused quartz substrates kept inside a solution containing gadolinium nitrate, terbium nitrate and Urea maintained at 90°C. Gadolinium hydroxy-carbonate films are then treated at 800°C for 2 hour to obtain Tb doped cubic Gd_2O_3 as confirmed by X-ray diffraction measurement. The photoluminescence spectra display characteristic Tb emission at 544 nm when excited at 285 nm. The lifetime of Tb emission is found to be of the order of few microseconds. (author)

  6. Non-vacuum growth of graphene films using solid carbon source

    Energy Technology Data Exchange (ETDEWEB)

    Nguyen, Ba-Son [Department of Mechanical Engineering, National Cheng Kung University, 1 University Road, Tainan 701, Taiwan (China); Faculty of Mechatronics – Electronics, Lac Hong University, 10 Huynh Van Nghe Road, Bienhoa (Viet Nam); Lin, Jen-Fin, E-mail: jflin@mail.ncku.edu.tw, E-mail: dcperng@ee.ncku.edu.tw [Department of Mechanical Engineering, National Cheng Kung University, 1 University Road, Tainan 701, Taiwan (China); Center for Micro/Nano Science and Technology, National Cheng Kung University, 1 University Road, Tainan 701, Taiwan (China); Perng, Dung-Ching, E-mail: jflin@mail.ncku.edu.tw, E-mail: dcperng@ee.ncku.edu.tw [Center for Micro/Nano Science and Technology, National Cheng Kung University, 1 University Road, Tainan 701, Taiwan (China); Institute of Microelectronics and Electrical Engineering Department, National Cheng Kung University, 1 University Road, Tainan 701, Taiwan (China)

    2015-06-01

    This study demonstrates that air annealing can grow high-quality graphene films on the surface of polycrystalline nickel film with the help of an effective SiO{sub 2} capping layer. The number of graphene layers can be modulated by the amount of carbon embedded in the Ni film before annealing. Raman analysis results, transmission electron microscopy images, and electron diffraction patterns of the samples confirm that graphene films can be grown in air with an oxygen blocking layer and a 10 °C/s cooling rate in an open-vented rapid thermal annealing chamber or an open tube furnace. The high-quality low-defect air-annealing grown graphene is comparable to commercially available graphene grown via chemical vapor deposition. The proposed graphene growth using air annealing technique is simple and low-cost, making it highly attractive for mass production. It is transfer-free to a silicon substrate and can speed up graphene development, opening up new applications.

  7. Growth and characterization of tris(8-hydroxyquinoline)-aluminum molecular films

    Energy Technology Data Exchange (ETDEWEB)

    Jan, Da-Jeng; Wang, Sheng-Shin; Tang, Shiow-Jing; Lin, Ku-Yen; Yang, Jiun-Jie; Shen, Ji-Lin; Chiu, Kuan-Cheng, E-mail: kcchiu@cycu.edu.tw

    2011-11-30

    Various tris(8-hydroxyquinoline)-aluminum (Alq3) molecular solid films were grown on top of indium-tin-oxide (ITO) glass substrates using physical vapor deposition. The effect of changing the growth conditions on the properties of the films was studied. From scanning electron microscopy, an Alq3 planar layer over an ITO-substrate was observed at the initial period, and an Alq3 tubular structure (which becomes dominant at substrate temperature T{sub sub} Greater-Than-Over-Equal-To 90 Degree-Sign C) was found to nucleate from this layer. From X-ray diffraction, the Alq3 planar layer possesses an amorphous character while the Alq3 tubular layer has a triclinic {alpha}-phase structure. Based on an Arrhenius plot of the growth rate versus 1/T{sub sub}, the growth behaviors in various T{sub sub}-regions were discussed to be dominated by adhesion (for T{sub sub} < 90 Degree-Sign C), steric effect (90 Degree-Sign C < T{sub sub} < 150 Degree-Sign C), and re-evaporation (T{sub sub} > 150 Degree-Sign C). Then, from optical transmission and photoluminescence spectra performed on the high crystalline Alq3 films, two signals associated with the optical-bandgap E{sub g} absorption and the gap-state absorption were determined and discussed in terms of the optical properties of the constituent Alq3 molecules. Finally, from a fit of E{sub g}(T) by an effective electron-phonon interaction model, the physical significance of these fitting parameters for the Alq3 molecular solid was investigated.

  8. Growth of fine holes in polyethylenenaphthalate film irradiated by fission fragments

    International Nuclear Information System (INIS)

    Komaki, Y.; Tsujimura, S.

    1976-01-01

    Growth of fine holes by chemical etching in polyethylenenaphthalate films exposed to fission fragments were examined by measuring gas flow through the films. The etching rate along tracks, the radial etching rate, and the bulk etching rate were determined at effective hole diameters of 100 to 1000 A and hole densities of approximately 10 8 cm -2 . The effects of ethanol and surfactants on the etching rates were studied from the viewpoint of attaining less-tapered holes

  9. Propagation of magnetostatic spin waves in an yttrium iron garnet film for out-of-plane magnetic fields

    Science.gov (United States)

    Bang, Wonbae; Lim, Jinho; Trossman, Jonathan; Tsai, C. C.; Ketterson, John B.

    2018-06-01

    We have observed the propagation of spin waves across a thin yttrium iron garnet film on (1 1 1) gadolinium gallium garnet for magnetic fields inclined with respect to the film plane. Two principle planes were studied: that for H in the plane defined by the wave vector k and the plane normal, n, with limiting forms corresponding to the Backward Volume and Forward Volume modes, and that for H in the plane perpendicular to k, with limiting forms corresponding to the Damon-Eshbach and Forward Volume modes. By exciting the wave at one edge of the film and observing the field dependence of the phase of the received signal at the opposing edge we determined the frequency vs. wavevector relation, ω = ω (k), of various propagating modes in the film. Avoided crossings are observed in the Damon-Eshbach and Forward Volume regimes when the propagating mode intersects the higher, exchange split, volume modes, leading to an extinction of the propagating mode; analysis of the resulting behavior allows a determination of the exchange parameter. The experimental results are compared with theoretical simulations.

  10. Growth, ruminal measurements, and health characteristics of Holstein bull calves fed an Aspergillus oryzae fermentation extract.

    Science.gov (United States)

    Yohe, T T; O'Diam, K M; Daniels, K M

    2015-09-01

    A fermentation extract of the fungus Aspergillus oryzae can be used as a prebiotic. The objective was to determine if dietary inclusion of a fermentation extract of A. oryzae as well as calf age would alter growth, health, performance parameters, and the growth and development of the rumen in Holstein calves from birth thru 1 wk postweaning; it was hypothesized that it would. Purchased bull calves (n=52) that originated from 1 of 13 farms were used in this experiment. All calves had serum IgG greater than 10 mg/mL. Calves were randomly assigned to a slaughter age, 4 (n=16) or 8 wk (n=36), and treatment, control (n=27) or fermentation extract of A. oryzae (AMF; n=25). Calves were housed and fed individually; no bedding was used and no forage was fed. Calves assigned to AMF were fed 2 g of AMF daily. Liquid AMF was delivered in milk replacer for the first 4 wk of the study; solid AMF was top-dressed on texturized starter thereafter. Calves were fed nonmedicated milk replacer twice daily (22.0% crude protein, 20.0% fat, dry matter basis; 680 g/d) and were weaned upon consumption of 0.91 kg of starter (20% crude protein, 2.0% fat; medicated with decoquinate) for 3 consecutive days or on d 45 of the study, whichever came first. Calves had ad libitum access to starter and water throughout the study. Feed intake as well as fecal and respiratory scores were recorded daily; body weight, withers height, and hip height were recorded weekly. Gross rumen measurements and rumen samples for future gross and histological analyses were taken at 4 and 8 wk. All calves grew similarly; weaning age averaged 40.39±0.77 d. Lifetime average daily gain was 0.60±0.05 kg/d and lifetime gain-to-feed ratio was 0.56±0.05. Milk replacer, starter, total dry matter intake, gross and histological rumen measurements, rumen pH, fecal and respiratory scores, and total medical costs were not affected by treatment. Despite total medical costs not differing by treatment, a lower percentage of AMF

  11. The visibility of IQHE at sharp edges: experimental proposals based on interactions and edge electrostatics

    International Nuclear Information System (INIS)

    Erkarslan, U; Oylumluoglu, G; Grayson, M; Siddiki, A

    2012-01-01

    The influence of the incompressible strips on the integer quantized Hall effect (IQHE) is investigated, considering a cleaved-edge overgrown (CEO) sample as an experimentally realizable sharp edge system. We propose a set of experiments to clarify the distinction between the large-sample limit when bulk disorder defines the IQHE plateau width and the small-sample limit smaller than the disorder correlation length, when self-consistent edge electrostatics define the IQHE plateau width. The large-sample or bulk quantized Hall (QH) regime is described by the usual localization picture, whereas the small-sample or edge regime is discussed within the compressible/incompressible strips picture, known as the screening theory of QH edges. Utilizing the unusually sharp edge profiles of the CEO samples, a Hall bar design is proposed to manipulate the edge potential profile from smooth to extremely sharp. By making use of a side-gate perpendicular to the two-dimensional electron system, it is shown that the plateau widths can be changed or even eliminated altogether. Hence, the visibility of IQHE is strongly influenced when adjusting the edge potential profile and/or changing the dc current direction under high currents in the nonlinear transport regime. As a second investigation, we consider two different types of ohmic contacts, namely highly transmitting (ideal) and highly reflecting (non-ideal) contacts. We show that if the injection contacts are non-ideal, but still ohmic, it is possible to measure directly the non-quantized transport taking place at the bulk of the CEO samples. The results of the experiments we propose will clarify the influence of the edge potential profile and the quality of the contacts, under QH conditions. (paper)

  12. Crystalline silicon thin film growth by ECR plasma CVD for solar cells

    International Nuclear Information System (INIS)

    Licai Wang

    1999-07-01

    This thesis describes the background, motivation and work carried out towards this PhD programme entitled 'Crystalline Silicon Thin Film Growth by ECR Plasma CVD for Solar Cells'. The fundamental principles of silicon solar cells are introduced with a review of silicon thin film and bulk solar cells. The development and prospects for thin film silicon solar cells are described. Some results of a modelling study on thin film single crystalline solar cells are given which has been carried out using a commercially available solar cell simulation package (PC-1D). This is followed by a description of thin film deposition techniques. These include Chemical Vapour Deposition (CVD) and Plasma-Assisted CVD (PACVD). The basic theory and technology of the emerging technique of Electron Cyclotron Resonance (ECR) PACVD, which was used in this research, are introduced and the potential advantages summarised. Some of the basic methods of material and cell characterisation are briefly described, together with the work carried out in this research. The growth by ECR PACVD at temperatures 2 illumination. The best efficiency in the ECR grown structures was 13.76% using an epitaxial emitter. Cell performance was analysed in detail and the factors controlling performance identified by fitting self-consistently the fight and dark current-voltage and spectral response data using PC-1D. Finally, the conclusions for this research and suggestions for further work are outlined. (author)

  13. Edge field emission of large-area single layer graphene

    Energy Technology Data Exchange (ETDEWEB)

    Kleshch, Victor I., E-mail: klesch@polly.phys.msu.ru [Department of Physics, M.V. Lomonosov Moscow State University, Moscow 119991 (Russian Federation); Bandurin, Denis A. [Department of Physics, M.V. Lomonosov Moscow State University, Moscow 119991 (Russian Federation); Orekhov, Anton S. [Department of Physics, M.V. Lomonosov Moscow State University, Moscow 119991 (Russian Federation); A.V. Shubnikov Institute of Crystallography, RAS, Moscow 119333 (Russian Federation); Purcell, Stephen T. [ILM, Université Claude Bernard Lyon 1 et CNRS, UMR 5586, 69622 Villeurbanne (France); Obraztsov, Alexander N. [Department of Physics, M.V. Lomonosov Moscow State University, Moscow 119991 (Russian Federation); Department of Physics and Mathematics, University of Eastern Finland, Joensuu 80101 (Finland)

    2015-12-01

    Graphical abstract: - Highlights: • Stable field emission was observed from the edge of large-area graphene on quartz. • A strong hysteresis in current–voltage characteristics was observed. • The hysteresis was explained by mechanical peeling of graphene edge from substrate. • Reversible peeling of graphene edge may be used in microelectromechanical systems. - Abstract: Field electron emission from the edges of large-area (∼1 cm × 1 cm) graphene films deposited onto quartz wafers was studied. The graphene was previously grown by chemical vapour deposition on copper. An extreme enhancement of electrostatic field at the edge of the films with macroscopically large lateral dimensions and with single atom thickness was achieved. This resulted in the creation of a blade type electron emitter, providing stable field emission at low-voltage with linear current density up to 0.5 mA/cm. A strong hysteresis in current–voltage characteristics and a step-like increase of the emission current during voltage ramp up were observed. These effects were explained by the local mechanical peeling of the graphene edge from the quartz substrate by the ponderomotive force during the field emission process. Specific field emission phenomena exhibited in the experimental study are explained by a unique combination of structural, electronic and mechanical properties of graphene. Various potential applications ranging from linear electron beam sources to microelectromechanical systems are discussed.

  14. One-pot growth of two-dimensional lateral heterostructures via sequential edge-epitaxy

    Science.gov (United States)

    Sahoo, Prasana K.; Memaran, Shahriar; Xin, Yan; Balicas, Luis; Gutiérrez, Humberto R.

    2018-01-01

    Two-dimensional heterojunctions of transition-metal dichalcogenides have great potential for application in low-power, high-performance and flexible electro-optical devices, such as tunnelling transistors, light-emitting diodes, photodetectors and photovoltaic cells. Although complex heterostructures have been fabricated via the van der Waals stacking of different two-dimensional materials, the in situ fabrication of high-quality lateral heterostructures with multiple junctions remains a challenge. Transition-metal-dichalcogenide lateral heterostructures have been synthesized via single-step, two-step or multi-step growth processes. However, these methods lack the flexibility to control, in situ, the growth of individual domains. In situ synthesis of multi-junction lateral heterostructures does not require multiple exchanges of sources or reactors, a limitation in previous approaches as it exposes the edges to ambient contamination, compromises the homogeneity of domain size in periodic structures, and results in long processing times. Here we report a one-pot synthetic approach, using a single heterogeneous solid source, for the continuous fabrication of lateral multi-junction heterostructures consisting of monolayers of transition-metal dichalcogenides. The sequential formation of heterojunctions is achieved solely by changing the composition of the reactive gas environment in the presence of water vapour. This enables selective control of the water-induced oxidation and volatilization of each transition-metal precursor, as well as its nucleation on the substrate, leading to sequential edge-epitaxy of distinct transition-metal dichalcogenides. Photoluminescence maps confirm the sequential spatial modulation of the bandgap, and atomic-resolution images reveal defect-free lateral connectivity between the different transition-metal-dichalcogenide domains within a single crystal structure. Electrical transport measurements revealed diode-like responses across the

  15. Edge subdivision and edge multisubdivision versus some domination related parameters in generalized corona graphs

    Directory of Open Access Journals (Sweden)

    Magda Dettlaff

    2016-01-01

    Full Text Available Given a graph \\(G=(V,E\\, the subdivision of an edge \\(e=uv\\in E(G\\ means the substitution of the edge \\(e\\ by a vertex \\(x\\ and the new edges \\(ux\\ and \\(xv\\. The domination subdivision number of a graph \\(G\\ is the minimum number of edges of \\(G\\ which must be subdivided (where each edge can be subdivided at most once in order to increase the domination number. Also, the domination multisubdivision number of \\(G\\ is the minimum number of subdivisions which must be done in one edge such that the domination number increases. Moreover, the concepts of paired domination and independent domination subdivision (respectively multisubdivision numbers are defined similarly. In this paper we study the domination, paired domination and independent domination (subdivision and multisubdivision numbers of the generalized corona graphs.

  16. Growth and surface characterization of sputter-deposited molybdenum oxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Ramana, C.V. [Nanoscience and Surface Chemistry Laboratory, Department of Geological Sciences, University of Michigan, Ann Arbor, MI 48109 (United States)]. E-mail: ramanacv@umich.edu; Atuchin, V.V. [Laboratory of Optical Materials and Structures, Institute of Semiconductor Physics, SB RAS, Novosibirsk 630090 (Russian Federation); Kesler, V.G. [Technical Centre, Institute of Semiconductor Physics, SB RAS, Novosibirsk 630090 (Russian Federation); Kochubey, V.A. [Laboratory of Optical Materials and Structures, Institute of Semiconductor Physics, SB RAS, Novosibirsk 630090 (Russian Federation); Pokrovsky, L.D. [Laboratory of Optical Materials and Structures, Institute of Semiconductor Physics, SB RAS, Novosibirsk 630090 (Russian Federation); Shutthanandan, V. [Environmental Molecular Sciences Laboratory, Pacific Northwest National Laboratory, Richland, WA 99352 (United States); Becker, U. [Nanoscience and Surface Chemistry Laboratory, Department of Geological Sciences, University of Michigan, Ann Arbor, MI 48109 (United States); Ewing, R.C. [Nanoscience and Surface Chemistry Laboratory, Department of Geological Sciences, University of Michigan, Ann Arbor, MI 48109 (United States)

    2007-04-15

    Molybdenum oxide thin films were produced by magnetron sputtering using a molybdenum (Mo) target. The sputtering was performed in a reactive atmosphere of an argon-oxygen gas mixture under varying conditions of substrate temperature (T {sub s}) and oxygen partial pressure (pO{sub 2}). The effect of T {sub s} and pO{sub 2} on the growth and microstructure of molybdenum oxide films was examined in detail using reflection high-energy electron diffraction (RHEED), Rutherford backscattering spectrometry (RBS), energy-dispersive X-ray spectrometry (EDS), X-ray photoelectron spectroscopy (XPS), and scanning electron microscopy (SEM) measurements. The analyses indicate that the effect of T {sub s} and pO{sub 2} on the microstructure and phase of the grown molybdenum oxide thin films is remarkable. RHEED and RBS results indicate that the films grown at 445 deg. C under 62.3% O{sub 2} pressure were stoichiometric and polycrystalline MoO{sub 3}. Films grown at lower pO{sub 2} were non-stoichiometric MoO {sub x} films with the presence of secondary phase. The microstructure of the grown Mo oxide films is discussed and conditions were optimized to produce phase pure, stoichiometric, and highly textured polycrystalline MoO{sub 3} films.

  17. Method of Preparation AZP4330 PR Pattern with Edge Slope 40°

    Science.gov (United States)

    Wu, Jie; Zhao, Hongyuan; Yu, Yuanwei; Zhu, Jian

    2018-03-01

    When the edge which is under the multi-film is more steep or angular, the stress in the multilayer film near the edge is concentrated, this situation will greatly reduce the reliability of electronic components. And sometimes, we need some special structure such as a slope with a specific angle in the MEMS, so that the metal line can take the signal to the output pad through the slope instead of deep step. To cover these problems, the lithography method of preparing the structure with edge slope is studied. In this paper, based on the Kirchhoff scalar diffraction theory we try to change the contact exposure gap and the post-baking time at the specific temperature to find out the effect about the edge angle of the photoresist. After test by SEM, the results were presented by using AZP4330 photoresist, we can get the PR Pattern with edge slope 40° of the process and the specific process parameters.

  18. Laterally enhanced growth of electrodeposited Au to form ultrathin films on nonconductive surfaces

    International Nuclear Information System (INIS)

    Kobayashi, Chiaki; Saito, Mikiko; Homma, Takayuki

    2012-01-01

    We investigated the laterally enhanced growth of electrodeposited Au for fabricating nanogap electrodes. To enhance the lateral growth, we carried out electrodeposition over patterned electrodes onto a SiO 2 surface modified with self-assembled monolayers (SAMs) or dendrimers with amine groups. The morphology and thickness of the Au films were controlled by adjusting deposition conditions such as duration, applied potential, and Au ion concentration in the bath. To investigate the mechanism of the laterally enhanced growth, the surface states of SAM- or dendrimer-modified SiO 2 were analyzed by X-ray photoelectron spectroscopy (XPS). The XPS results indicate the existence of organic molecules and Au ions on the SiO 2 surface, which suggests that laterally enhanced growth is induced by the Au ions coordinated on the amine groups of the organic molecules. To further analyze the mechanism of the laterally enhanced growth, we investigated the relationship between the morphology of the laterally enhanced growth of Au and the amount of Au ions on organic molecules. The laterally enhanced growth of Au is expected to be useful for fabricating thin film nanogap electrodes.

  19. Stabilisation of late transition metal and noble metal films in hexagonal and body centred tetragonal phases by epitaxial growth

    Energy Technology Data Exchange (ETDEWEB)

    Hueger, E.

    2005-08-26

    In this work ultrathin metallic films with a crystal phase different to their natural bulk structure were produced by hetero-epitaxial growth on metallic substrates. A further aim of this work was to understand the initiation, growth and stability of crystal phase modifications of these films. there exist cases where the films turn beyond the pseudomorphic-growth to a crystal phase different from their natural bulk structure. The present work presents and discusses such a case in addition to the general phenomenon of pseudomorphic-growth. In particular it is shown that metals whose natural phase is face centred cubic (fcc) can be grown in body centred tetragonal (bct) or hexagonal close packed (hcp) phases in the form of thin films on (001) surfaces of appropriate substrates. The growth behavior, electron diffraction analysis, appearance conditions, geometric fit considerations, examples and a discussion of the phase stability of non-covered films and superlattices is given reviewing all epitaxial-systems whose diffraction pattern can be explained by the hexagonal or pseudomorphic bct phase. (orig.)

  20. Survival Rate and Growth of Fighting Fish Larvae (Betta splendens Regan Fed on Various Live Foods

    Directory of Open Access Journals (Sweden)

    T. Budiardi

    2007-01-01

    Full Text Available Larval of fighting fish (Betta splendens Regan requires precise live foods for its growth and survival. In this experiment, fish larvae were fed on either Paramecium + Artemia, Paramecium + Artemia + Tubifex, Paramecium + Moina, or Paramecium + Moina + Tubifex. The fish were fed Paramecium from day-2 till day-7 after hatching. There after, the live food was changed according to the treatments till day-28.  Results showed that fish fed on Paramecium + Artemia significantly had the highest total length (12.63 mm than other treatments (11.86 mm. On the other hand, survival rate of fish had no significant affected by the treatments. Keywords: fighting fish, Betta splendens, Paramecium, Moina, Artemia, Tubifex, larvae   ABSTRAK Larva ikan betta (Betta splendens Regan membutuhkan jenis pakan alami yang tepat bagi kelangsungan hidup dan pertumbuhannya. Pada penelitian ini, larva ikan diberi pakan berupa Paramecium + Artemia, Paramecium + Artemia + Tubifex, Paramecium + Moina, atau Paramecium + Moina + Tubifex.  Ikan diberi pakan pakan berupa Paramecium dari hari ke-2 hingga hari ke-7. Setelah itu, pemberian pakan alami diubah berdasarkan masing-masing perlakuan hingga hari ke-28.  Hasil penelitian menunjukkan bahwa ikan yang diberi pakan Paramecium + Artemia memiliki tubuh secara signifikan lebih panjang (12,63 mm dibandingkan perlakuan lainnya (11,86 mm.  Sementara itu, kelangsungan hidup tidak dipengatuhi oleh perlakuan. Kata kunci: ikan betta, Betta splendens, Paramecium, Moina, Artemia, Tubifex, larva

  1. Underpotential deposition-mediated layer-by-layer growth of thin films

    Science.gov (United States)

    Wang, Jia Xu; Adzic, Radoslav R.

    2015-05-19

    A method of depositing contiguous, conformal submonolayer-to-multilayer thin films with atomic-level control is described. The process involves the use of underpotential deposition of a first element to mediate the growth of a second material by overpotential deposition. Deposition occurs between a potential positive to the bulk deposition potential for the mediating element where a full monolayer of mediating element forms, and a potential which is less than, or only slightly greater than, the bulk deposition potential of the material to be deposited. By cycling the applied voltage between the bulk deposition potential for the mediating element and the material to be deposited, repeated desorption/adsorption of the mediating element during each potential cycle can be used to precisely control film growth on a layer-by-layer basis. This process is especially suitable for the formation of a catalytically active layer on core-shell particles for use in energy conversion devices such as fuel cells.

  2. Mechanistic Insights into Growth of Surface-Mounted Metal-Organic Framework Films Resolved by Infrared (Nano-) Spectroscopy

    NARCIS (Netherlands)

    Delen, Guusje; Ristanovic, Zoran; Mandemaker, Laurens D. B.; Weckhuysen, Bert M.

    2018-01-01

    Control over assembly, orientation, and defect-free growth of metal-organic framework (MOF) films is crucial for their future applications. A layer-by-layer approach is considered a suitable method to synthesize highly oriented films of numerous MOF topologies, but the initial stages of the film

  3. Growth process and structure of Er/Si(100) thin film

    International Nuclear Information System (INIS)

    Fujii, S.; Michishita, Y.; Miyamae, N.; Suto, H.; Honda, S.; Okado, H.; Oura, K.; Katayama, M.

    2006-01-01

    The solid-phase reactive epitaxial growth processes and structures of Er/Si(100) thin films were investigated by coaxial impact-collision ion scattering spectroscopy (CAICISS), scanning electron microscopy (SEM) and transmission electron microscopy (TEM). The as-deposited Er film grown at room temperature was transformed into crystalline rectangular-shaped islands after annealing at 900 deg. C. These islands have a hexagonal AlB 2 -type structure and the epitaxial relationship is determined to be ErSi 2 (011-bar0)[0001]//Si(100)[011-bar]. It has been revealed that the surface of the Er silicide island is terminated with an Er plane

  4. Surface morphology study on chromium oxide growth on Cr films by Nd-YAG laser oxidation process

    International Nuclear Information System (INIS)

    Dong Qizhi; Hu Jiandong; Guo Zuoxing; Lian Jianshe; Chen Jiwei; Chen Bo

    2002-01-01

    Grain sized (60-100 nm) Cr 2 O 3 thin films were prepared on Cr thin film surfaces by Nd-YAG laser photothermal oxidation process. Surface morphology study showed crack-free short plateau-like oxide films formed. Increase of dislocation density after pulsed laser irradiation was found. Thin film external surfaces, grain boundaries and dislocations are main paths of laser surface oxidation. Pinning and sealing of grain boundary was the reason that deeper oxidation did not produce. Grain growth and agglomeration of Cr sub-layer yielded tensile stress on the surface Cr 2 O 3 thin film. It was the reason that short plateau-like surface morphology formed and cracks appeared sometimes. In oxygen annealing at 700 deg. C, grain boundaries were considered not to be pinned at the surface, mixture diffusion was main mechanism in growth of oxide. Compression stress development in whole film led to extrusion of grains that was the reason that multiple appearances such as pyramid-like and nutshell-like morphology formed

  5. Infrared study of the absorption edge of β-InN films grown on GaN/MgO structures

    Science.gov (United States)

    Pérez-Caro, M.; Rodríguez, A. G.; Vidal, M. A.; Navarro-Contreras, H.

    2010-07-01

    Infrared optical studies were carried out in a group of cubic InN samples grown by gas source molecular beam epitaxy on MgO (001) substrates. Room temperature (RT) reflectance and low-temperature (LT) transmittance measurements were performed by using fast Fourier transform infrared spectrometry. Reflectance fittings allowed to establish that β-InN films have large free-carrier concentrations present (>1019 cm-3), a result that is corroborated by Hall effect measurements. Each sample explored exhibited a different optical absorption edge. The Varshni parameters that describe adequately the optical absorption edge responses with temperature are obtained for the set of samples studied. The observed temperatures changes, from LT to RT, are the lowest reported for III-V semiconductor binary compounds. The temperature coefficient of the conduction band depends on the strength of the electron-phonon interaction (e-ph-i), as well as on the thermal expansion. It has been predicted that cubic InN has one of the smallest e-ph-i of all III-V compounds, which is corroborated by these results. The variation in values of absorption edges is clearly consistent with the Burstein-Moss and band renormalization effects, produced by high free electron concentrations. It is shown that the conduction band in β-InN, analogous to wurtzite InN, follows a nonparabolic behavior.

  6. Infrared study of the absorption edge of β-InN films grown on GaN/MgO structures

    International Nuclear Information System (INIS)

    Perez-Caro, M.; Rodriguez, A. G.; Vidal, M. A.; Navarro-Contreras, H.

    2010-01-01

    Infrared optical studies were carried out in a group of cubic InN samples grown by gas source molecular beam epitaxy on MgO (001) substrates. Room temperature (RT) reflectance and low-temperature (LT) transmittance measurements were performed by using fast Fourier transform infrared spectrometry. Reflectance fittings allowed to establish that β-InN films have large free-carrier concentrations present (>10 19 cm -3 ), a result that is corroborated by Hall effect measurements. Each sample explored exhibited a different optical absorption edge. The Varshni parameters that describe adequately the optical absorption edge responses with temperature are obtained for the set of samples studied. The observed temperatures changes, from LT to RT, are the lowest reported for III-V semiconductor binary compounds. The temperature coefficient of the conduction band depends on the strength of the electron-phonon interaction (e-ph-i), as well as on the thermal expansion. It has been predicted that cubic InN has one of the smallest e-ph-i of all III-V compounds, which is corroborated by these results. The variation in values of absorption edges is clearly consistent with the Burstein-Moss and band renormalization effects, produced by high free electron concentrations. It is shown that the conduction band in β-InN, analogous to wurtzite InN, follows a nonparabolic behavior.

  7. Organic semiconductor growth and morphology considerations for organic thin-film transistors.

    Science.gov (United States)

    Virkar, Ajay A; Mannsfeld, Stefan; Bao, Zhenan; Stingelin, Natalie

    2010-09-08

    Analogous to conventional inorganic semiconductors, the performance of organic semiconductors is directly related to their molecular packing, crystallinity, growth mode, and purity. In order to achieve the best possible performance, it is critical to understand how organic semiconductors nucleate and grow. Clever use of surface and dielectric modification chemistry can allow one to control the growth and morphology, which greatly influence the electrical properties of the organic transistor. In this Review, the nucleation and growth of organic semiconductors on dielectric surfaces is addressed. The first part of the Review concentrates on small-molecule organic semiconductors. The role of deposition conditions on film formation is described. The modification of the dielectric interface using polymers or self-assembled mono-layers and their effect on organic-semiconductor growth and performance is also discussed. The goal of this Review is primarily to discuss the thin-film formation of organic semiconducting species. The patterning of single crystals is discussed, while their nucleation and growth has been described elsewhere (see the Review by Liu et. al).([¹]) The second part of the Review focuses on polymeric semiconductors. The dependence of physico-chemical properties, such as chain length (i.e., molecular weight) of the constituting macromolecule, and the influence of small molecular species on, e.g., melting temperature, as well as routes to induce order in such macromolecules, are described.

  8. Contrasting evolution patterns between glacier-fed and non-glacier-fed lakes in the central Tibetan Plateau and driving force analysis

    Science.gov (United States)

    Song, C.; Sheng, Y.

    2015-12-01

    High-altitude lakes in the Tibetan Plateau (TP) showed strong spatio-temporal variability during past decades. The lake dynamics can be associated with several key factors including lake type, supply of glacial meltwater, local climate variations. It is important to differentiate these factors when analyzing the driving force of lakes dynamics. With a focus on lakes over the Tanggula Mountains of the central TP, this study investigates the temporal evolution patterns of lake area and water level of different types: glacier-fed closed lake, non-glacier-fed closed lake and upstream lake (draining into closed lakes). We collected all available Landsat archive data and quantified the inter-annual variability of lake extents. Results show accelerated expansions of both glacier-fed and non-glacier-fed lakes during 1970s-2013, and different temporal patterns of the two types of lakes: the non-glacier-fed lakes displayed a batch-wise growth pattern, with obvious growth in 2002, 2005 and 2011 and slight changes in other years, while glacier-fed lakes showed steady expanding tendency. The contrasting patterns are confirmed by the distinction of lake level change between the two groups derived from satellite altimetry during 2003-2009. The upstream lakes remained largely stable due to natural drainage regulation. The intermittent expansions for non-glacier-fed lakes were found to be related to excessive precipitation events and positive "precipitation-evaporation". In contrast, glacier-fed lake changes showed weak correlations with precipitation variations, which imply a joint contribution from glacial meltwater to water budgets. A simple estimation reveals that the increased water storage for all of examined lakes contributed from precipitation/evaporation (0.31±0.09 Gt/yr) slightly overweighed the glacial meltwater supply (0.26±0.08 Gt/yr).

  9. Topological phases of topological-insulator thin films

    Science.gov (United States)

    Asmar, Mahmoud M.; Sheehy, Daniel E.; Vekhter, Ilya

    2018-02-01

    We study the properties of a thin film of topological insulator material. We treat the coupling between helical states at opposite surfaces of the film in the properly-adapted tunneling approximation, and show that the tunneling matrix element oscillates as a function of both the film thickness and the momentum in the plane of the film for Bi2Se3 and Bi2Te3 . As a result, while the magnitude of the matrix element at the center of the surface Brillouin zone gives the gap in the energy spectrum, the sign of the matrix element uniquely determines the topological properties of the film, as demonstrated by explicitly computing the pseudospin textures and the Chern number. We find a sequence of transitions between topological and nontopological phases, separated by semimetallic states, as the film thickness varies. In the topological phase, the edge states of the film always exist but only carry a spin current if the edge potentials break particle-hole symmetry. The edge states decay very slowly away from the boundary in Bi2Se3 , making Bi2Te3 , where this scale is shorter, a more promising candidate for the observation of these states. Our results hold for free-standing films as well as heterostructures with large-gap insulators.

  10. Substrate structure dependence of the growth modes of p-quaterphenyl thin films on gold

    International Nuclear Information System (INIS)

    Muellegger, S.; Mitsche, S.; Poelt, P.; Haenel, K.; Birkner, A.; Woell, C.; Winkler, A.

    2005-01-01

    The variably oriented crystallite surfaces of a recrystallized polycrystalline gold sample served as substrates for the investigation of the structure dependence of p-quaterphenyl (4P) thin film growth. The films were prepared in ultrahigh vacuum by organic molecular beam evaporation. Optical microscopy, scanning electron microscopy, combined with laterally resolved electron backscatter diffraction and scanning tunnelling microscopy have been applied to determine the correlation between the substrate surface structure and 4P film morphology. Crystallite surfaces consisting of (110) terraces favour highly anisotropic needle-like 4P growth with the needle orientation normal to the Au directions. Atomic steps on vicinal planes with narrow terraces (< 2 nm) can also induce anisotropy in the 4P thin film growth, in particular elongated 4P islands normal to the step direction. In contrast to that, a nearly isotropic distribution of the needle orientations is observed on Au grains terminated by highly symmetric (111) or (100) crystal planes. Additionally, patches of continuous 4P layers can be found on these surfaces. There is strong evidence that the 4P molecules within the needle-like crystallites are oriented parallel to the Au surface, whereas for the continuous layers the 4P molecules are oriented nearly upright on the surface

  11. Efficient soluble expression of disulfide bonded proteins in the cytoplasm of Escherichia coli in fed-batch fermentations on chemically defined minimal media.

    Science.gov (United States)

    Gąciarz, Anna; Khatri, Narendar Kumar; Velez-Suberbie, M Lourdes; Saaranen, Mirva J; Uchida, Yuko; Keshavarz-Moore, Eli; Ruddock, Lloyd W

    2017-06-15

    The production of recombinant proteins containing disulfide bonds in Escherichia coli is challenging. In most cases the protein of interest needs to be either targeted to the oxidizing periplasm or expressed in the cytoplasm in the form of inclusion bodies, then solubilized and re-folded in vitro. Both of these approaches have limitations. Previously we showed that soluble expression of disulfide bonded proteins in the cytoplasm of E. coli is possible at shake flask scale with a system, known as CyDisCo, which is based on co-expression of a protein of interest along with a sulfhydryl oxidase and a disulfide bond isomerase. With CyDisCo it is possible to produce disulfide bonded proteins in the presence of intact reducing pathways in the cytoplasm. Here we scaled up production of four disulfide bonded proteins to stirred tank bioreactors and achieved high cell densities and protein yields in glucose fed-batch fermentations, using an E. coli strain (BW25113) with the cytoplasmic reducing pathways intact. Even without process optimization production of purified human single chain IgA 1 antibody fragment reached 139 mg/L and hen avidin 71 mg/L, while purified yields of human growth hormone 1 and interleukin 6 were around 1 g/L. Preliminary results show that human growth hormone 1 was also efficiently produced in fermentations of W3110 strain and when glucose was replaced with glycerol as the carbon source. Our results show for the first time that efficient production of high yields of soluble disulfide bonded proteins in the cytoplasm of E. coli with the reducing pathways intact is feasible to scale-up to bioreactor cultivations on chemically defined minimal media.

  12. Effect of temperature oscillation on thermal characteristics of an aluminum thin film

    Science.gov (United States)

    Ali, H.; Yilbas, B. S.

    2014-12-01

    Energy transport in aluminum thin film is examined due to temperature disturbance at the film edge. Thermal separation of electron and lattice systems is considered in the analysis, and temperature variation in each sub-system is formulated. The transient analysis of frequency-dependent and frequency-independent phonon radiative transport incorporating electron-phonon coupling is carried out in the thin film. The dispersion relations of aluminum are used in the frequency-dependent analysis. Temperature at one edge of the film is oscillated at various frequencies, and temporal response of phonon intensity distribution in the film is predicted numerically using the discrete ordinate method. To assess the phonon transport characteristics, equivalent equilibrium temperature is introduced. It is found that equivalent equilibrium temperature in the electron and lattice sub-systems oscillates due to temperature oscillation at the film edge. The amplitude of temperature oscillation reduces as the distance along the film thickness increases toward the low-temperature edge of the film. Equivalent equilibrium temperature attains lower values for the frequency-dependent solution of the phonon transport equation than that corresponding to frequency-independent solution.

  13. Effect of growth interruptions on TiO{sub 2} films deposited by plasma enhanced chemical vapour deposition

    Energy Technology Data Exchange (ETDEWEB)

    Li, D., E-mail: dyli@yzu.edu.cn [College of Mechanical Engineering, Yangzhou University, Yangzhou, 225127 (China); Goullet, A. [Institut des Matériaux Jean Rouxel (IMN), UMR CNRS 6502, 2 rue de la Houssinière, 44322, Nantes (France); Carette, M. [Institut d’Electronique, de Microélectronique et de Nanotechnologie (IEMN), UMR CNRS 8520, Avenue Poincaré, 59652, Villeneuve d' Ascq (France); Granier, A. [Institut des Matériaux Jean Rouxel (IMN), UMR CNRS 6502, 2 rue de la Houssinière, 44322, Nantes (France); Landesman, J.P. [Institut de Physique de Rennes, UMR CNRS 6251, 263 av. Général Leclerc, 35042, Rennes (France)

    2016-10-01

    TiO{sub 2} films of ∼300 nm were deposited at low temperature (<140 °C) and pressure (0.4 Pa) using plasma enhanced chemical vapour deposition at the floating potential (V{sub f}) or the substrate self-bias voltage (V{sub b}) of −50 V. The impact of growth interruptions on the morphology, microstructure and optical properties of the films was investigated. The interruptions were carried out by stopping the plasma generation and gas injection once the increase of the layer thickness during each deposition step was about ∼100 nm. In one case of V{sub f}, the films of ∼300 nm exhibit a columnar morphology consisting of a bottom dense layer, an intermediate gradient layer and a top roughness layer. But the growth interruptions result in an increase of the dense layer thickness and a decrease of surface roughness. The film inhomogeneity has been identified by the in-situ real-time evolution of the kinetic ellipsometry (KE) parameters and the modeling process of spectroscopic ellipsometry (SE). The discrepancy of the refractive index measured by SE between bottom and upper layers can be reduced by growth interruptions. In the other case of V{sub b} = −50 V, the films exhibit a more compact arrangement which is homogeneous along the growth direction as confirmed by KE and SE. Both of Fourier transform infrared spectra and X-ray diffraction illustrate a phase transformation from anatase to rutile with the bias of −50 V, and also evidenced on the evolution of the refractive index dispersion curves. And a greatly increase of the refractive indice in the transparent range can be identified. However, the growth interruptions seem to have no influence on the morphology and optical properties in this case. - Highlights: • TiO{sub 2} films deposited by plasma processes at low temperature and pressure. • Influence of growth interruptions on structural and optical properties. • In-situ real-time ellipsometry measurements on film properties. • Structural and

  14. Observation of ultraslow stress release in silicon nitride films on CaF{sub 2}

    Energy Technology Data Exchange (ETDEWEB)

    Guo, Tianyi [School of Biomedical Engineering, McMaster University, 1280 Main St W, Hamilton, Ontario L8S 4K1, Canada and Institute of Microelectronics, Chinese Academy of Science, Beijing 100029 (China); Deen, M. Jamal, E-mail: jamal@mcmaster.ca [Department of Electrical and Computer Engineering, McMaster University, 1280 Main St W, Hamilton, Ontario L8S 4K1, Canada and School of Biomedical Engineering, McMaster University, 1280 Main St W, Hamilton, Ontario L8S 4K1 (Canada); Xu, Changqing; Fang, Qiyin [Department of Engineering Physics, McMaster University, 1280 Main St W, Hamilton, Ontario L8S 4L7 (Canada); Selvaganapathy, P. Ravi [Department of Mechanical Engineering, McMaster University, 1280 Main St W, Hamilton, Ontario L8S 4L7 (Canada); Zhang, Haiying [Institute of Microelectronics, Chinese Academy of Science, Beijing 100029 (China)

    2015-07-15

    Silicon nitride thin films are deposited by plasma-enhanced chemical vapor deposition on (100) and (111) CaF{sub 2} crystalline substrates. Delaminated wavy buckles formed during the release of internal compressive stress in the films and the stress releasing processes are observed macroscopically and microscopically. The stress release patterns start from the substrate edges and propagate to the center along defined directions aligned with the crystallographic orientations of the substrate. The stress releasing velocity of SiN{sub x} film on (111) CaF{sub 2} is larger than that of SiN{sub x} film with the same thickness on (100) CaF{sub 2}. The velocities of SiN{sub x} film on both (100) and (111) CaF{sub 2} increase with the film thickness. The stress releasing process is initiated when the films are exposed to atmosphere, but it is not a chemical change from x-ray photoelectron spectroscopy.

  15. Disilane chemisorption on Si(x)Ge(1-x)(100)-(2 x 1): molecular mechanisms and implications for film growth rates.

    Science.gov (United States)

    Ng, Rachel Qiao-Ming; Tok, E S; Kang, H Chuan

    2009-07-28

    At low temperatures, hydrogen desorption is known to be the rate-limiting process in silicon germanium film growth via chemical vapor deposition. Since surface germanium lowers the hydrogen desorption barrier, Si(x)Ge((1-x)) film growth rate increases with the surface germanium fraction. At high temperatures, however, the molecular mechanisms determining the epitaxial growth rate are not well established despite much experimental work. We investigate these mechanisms in the context of disilane adsorption because disilane is an important precursor used in film growth. In particular, we want to understand the molecular steps that lead, in the high temperature regime, to a decrease in growth rate as the surface germanium increases. In addition, there is a need to consider the issue of whether disilane adsorbs via silicon-silicon bond dissociation or via silicon-hydrogen bond dissociation. It is usually assumed that disilane adsorption occurs via silicon-silicon bond dissociation, but in recent work we provided theoretical evidence that silicon-hydrogen bond dissociation is more important. In order to address these issues, we calculate the chemisorption barriers for disilane on silicon germanium using first-principles density functional theory methods. We use the calculated barriers to estimate film growth rates that are then critically compared to the experimental data. This enables us to establish a connection between the dependence of the film growth rate on the surface germanium content and the kinetics of the initial adsorption step. We show that the generally accepted mechanism where disilane chemisorbs via silicon-silicon bond dissociation is not consistent with the data for film growth kinetics. Silicon-hydrogen bond dissociation paths have to be included in order to give good agreement with the experimental data for high temperature film growth rate.

  16. Solution growth, characterization and applications of zinc sulphide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Ndukwe, I C [School of Physical Sciences, Abia State University, Uturu, Abia State (Nigeria)

    1996-04-29

    Zinc sulphide (ZnS) thin films were successfully deposited on glass substrates under varying deposition conditions using the electroless or solution growth technique. The film properties investigated include their transmittance/reflectance/absorbance spectra, bandgap, optical constants, and thicknesses. Films grown under certain parametric conditions were found to exhibit high transmittance (64-98%), low absorbance, and low reflectance in the ultraviolet (uv)/visible/near infrared (nir) regions up to 1.00 {mu}m. Those obtained under other conditions exhibited high transmittance (78-98%) and low absorbance (0.01-0.1) in the uv/visible regions but low transmittance (30-37) and high absorbance (0.56) in the nir region. These characteristics revealed their suitability for various solar device applications. Bandgap range E{sub g}=3.7-3.8 eV and thickness range t=0.07 - 0.73 {mu}m were obtained.

  17. Heteroepitaxial silicon film growth at 600 oC from an Al-Si eutectic melt

    International Nuclear Information System (INIS)

    Chaudhari, P.; Shim, Heejae; Wacaser, Brent A.; Reuter, Mark C.; Murray, Conal; Reuter, Kathleen B.; Jordan-Sweet, Jean; Ross, Frances M.; Guha, Supratik

    2010-01-01

    A method for growing heteroepitaxial Si films on sapphire was developed using a 6 nm thin Al layer at substrate temperature of 600 o C. Subsequently, the growth of Si nanowires was demonstrated on these films at 490 o C without breaking vacuum. We characterized the properties of the Si films by Raman scattering, X-ray diffraction and transmission electron microscopy and show that the crystal quality and dopant control are promising for photovoltaic applications.

  18. Evaporation temperature-tuned physical vapor deposition growth engineering of one-dimensional non-Fermi liquid tetrathiofulvalene tetracyanoquinodimethane thin films

    DEFF Research Database (Denmark)

    Sarkar, I.; Laux, M.; Demokritova, J.

    2010-01-01

    We describe the growth of high quality tetrathiofulvalene tetracyanoquinodimethane (TTF-TCNQ) organic charge-transfer thin films which show a clear non-Fermi liquid behavior. Temperature dependent angle resolved photoemission spectroscopy and electronic structure calculations show that the growth...... of TTF-TCNQ films is accompanied by the unfavorable presence of neutral TTF and TCNQ molecules. The quality of the films can be controlled by tuning the evaporation temperature of the precursor in physical vapor deposition method....

  19. Epitaxial growth of manganese oxide films on MgAl2O4 (001) substrates and the possible mechanism

    Science.gov (United States)

    Ren, Lizhu; Wu, Shuxiang; Zhou, Wenqi; Li, Shuwei

    2014-03-01

    Three types of manganese oxide films were grown on MgAl2O4 (001) substrates by plasma-assisted molecular beam epitaxy (PA-MBE) under different growth rates and substrate temperatures. The structural characteristics and chemical compositions of the films were investigated by using in-situ reflection high-energy electron diffraction (RHEED), ex-situ X-ray diffraction, Raman, and X-ray photoelectron spectra (XPS). At a lower substrate temperature (730 K), the epitaxial film tends to form mixed phases with a coexistence of Mn3O4 and Mn5O8 in order to relieve the mismatch-strain. However, at a higher substrate temperature (750 K), all of the films crystallize into Mn3O4; the critical thickness of the film grown under a lower growth rate (7 Å/min) is much larger than that under a high growth rate (10 Å/min). When the film reaches a certain critical thickness, the surface will become fairly rough, and another oriented phase Mn3O4 would crystallize on such a surface.

  20. Soft X-Ray Magneto-optical Faraday Effect around Ni M2,3 Edges

    International Nuclear Information System (INIS)

    Kai, Chen; Ming-Qi, Cui; Fen, Yan; Li-Juan, Sun; Lei, Zheng; Chen-Yan, Ma; Shi-Bo, Xi; Yi-Dong, Zhao; Jia, Zhao

    2008-01-01

    We present magneto-optical (MO) Faraday spectra measured around the M 2,3 edges (60–70eV) of Ni films at the Beijing Synchrotron Radiation Facility (BSRF). A polarization analysis of the final state of the transmitted radiation from the Ni film is employed to determine the Faraday rotation at the edges. The MO effect becomes resonantly enhanced at the M 2,3 edges, and accordingly large values for the rotation angle β of 1.85 ± 0.19° for this ferromagnetic Ni film with thickness of 31 nm are measured. Without the magnetic field, the azimuthal angles do not shift; with parallel and antiparallel magnetic field the rotation angles shift in the opposite way and they are symmetrical. The uncertainty of Faraday rotation angles mainly comes from the data fitting and the state change of the beamline when the angles are measured

  1. Pulsed laser thin film growth of di-octyl substituted polyfluorene and its co-polymers

    Energy Technology Data Exchange (ETDEWEB)

    Gupta, R.K.; Ghosh, K.; Kahol, P.K. [Department of Physics, Astronomy and Materials Science, Missouri State University, Springfield, MO 65897 (United States); Yoon, J. [Department of Physics and Astronomy, University of Missouri, Columbia, MO 65211 (United States); Guha, S. [Department of Physics and Astronomy, University of Missouri, Columbia, MO 65211 (United States)], E-mail: guhas@missouri.edu

    2008-08-30

    Matrix-assisted pulsed laser deposition (PLD) allows a controlled layer-by-layer growth of polymer films. Di-octyl substituted polyfluorene (PF8) and its copolymers were deposited as thin films using matrix-assisted PLD by employing a KrF excimer laser with a fluence of 125 mJ/pulses. The optical and structural properties of these films are compared with spincoated films via Raman spectroscopy, absorption and photoluminescence. The Raman spectra of both PLD and spincoated films are similar indicating that the polymer films deposited via PLD maintain their molecular structure. Both the spincoated and the PLD grown PF8 films that were cast from toluene show the presence of the {beta} phase. Benzothiadiazole substituted PF8 (F8BT) and butyl phenyl-substituted PF8 (PFB) PLD grown films show a slightly broader emission compared to the spincoated films, which is attributed to an enhanced intermolecular interaction in the PLD grown thin films.

  2. Pulsed laser thin film growth of di-octyl substituted polyfluorene and its co-polymers

    International Nuclear Information System (INIS)

    Gupta, R.K.; Ghosh, K.; Kahol, P.K.; Yoon, J.; Guha, S.

    2008-01-01

    Matrix-assisted pulsed laser deposition (PLD) allows a controlled layer-by-layer growth of polymer films. Di-octyl substituted polyfluorene (PF8) and its copolymers were deposited as thin films using matrix-assisted PLD by employing a KrF excimer laser with a fluence of 125 mJ/pulses. The optical and structural properties of these films are compared with spincoated films via Raman spectroscopy, absorption and photoluminescence. The Raman spectra of both PLD and spincoated films are similar indicating that the polymer films deposited via PLD maintain their molecular structure. Both the spincoated and the PLD grown PF8 films that were cast from toluene show the presence of the β phase. Benzothiadiazole substituted PF8 (F8BT) and butyl phenyl-substituted PF8 (PFB) PLD grown films show a slightly broader emission compared to the spincoated films, which is attributed to an enhanced intermolecular interaction in the PLD grown thin films

  3. Pulsed laser thin film growth of di-octyl substituted polyfluorene and its co-polymers

    Science.gov (United States)

    Gupta, R. K.; Ghosh, K.; Kahol, P. K.; Yoon, J.; Guha, S.

    2008-08-01

    Matrix-assisted pulsed laser deposition (PLD) allows a controlled layer-by-layer growth of polymer films. Di-octyl substituted polyfluorene (PF8) and its copolymers were deposited as thin films using matrix-assisted PLD by employing a KrF excimer laser with a fluence of 125 mJ/pulses. The optical and structural properties of these films are compared with spincoated films via Raman spectroscopy, absorption and photoluminescence. The Raman spectra of both PLD and spincoated films are similar indicating that the polymer films deposited via PLD maintain their molecular structure. Both the spincoated and the PLD grown PF8 films that were cast from toluene show the presence of the β phase. Benzothiadiazole substituted PF8 (F8BT) and butyl phenyl-substituted PF8 (PFB) PLD grown films show a slightly broader emission compared to the spincoated films, which is attributed to an enhanced intermolecular interaction in the PLD grown thin films.

  4. Structure and morphology of magnetron sputter deposited ultrathin ZnO films on confined polymeric template

    Science.gov (United States)

    Singh, Ajaib; Schipmann, Susanne; Mathur, Aakash; Pal, Dipayan; Sengupta, Amartya; Klemradt, Uwe; Chattopadhyay, Sudeshna

    2017-08-01

    The structure and morphology of ultra-thin zinc oxide (ZnO) films with different film thicknesses on confined polymer template were studied through X-ray reflectivity (XRR) and grazing incidence small angle X-ray scattering (GISAXS). Using magnetron sputter deposition technique ZnO thin films with different film thicknesses (weight of polystyrene). The detailed internal structure, along the surface/interfaces and the growth direction of the system were explored in this study, which provides insight into the growth procedure of ZnO on confined polymer and reveals that a thin layer of ZnO, with very low surface and interface roughness, can be grown by DC magnetron sputtering technique, with approximately full coverage (with bulk like electron density) even in nm order of thickness, in 2-7 nm range on confined polymer template, without disturbing the structure of the underneath template. The resulting ZnO-polystyrene hybrid systems show strong ZnO near band edge (NBE) and deep-level (DLE) emissions in their room temperature photoluminescence spectra, where the contribution of DLE gets relatively stronger with decreasing ZnO film thickness, indicating a significant enhancement of surface defects because of the greater surface to volume ratio in thinner films.

  5. Mechanism and prevention of edge over coating in continuous hot-dip galvanizing

    Energy Technology Data Exchange (ETDEWEB)

    Takeishi, Y.

    2000-11-01

    In order to clarify the mechanism of edge over coating (EOC) for continuous hot-dip galvanizing, a visualization test of the gas flow on strip and a cold model test to measure the profile of the coating thickness at the strip edge were carried out. Outward deflected gas flow was observed at the strip edge and EOC developed in the absence of gas wiping. With gas wiping, EOC developing below the wiping position is reduced by the impinging pressure of the gas wiping jet, and the film thickness becomes approximately uniform at the gas wiping position. However, upward of the gas wiping position. EOC increases again and the outward deflected gas flow on the strip edge sweeps the liquid film to the strip edge. EOC is considered to develop at the location where the dynamic pressure of the outward deflected gas flow balances with the surface tension. For the prevention of EOC, edge masking was devised and the effects which reduce EOC were measured in the cold model test and on a commercial line test. The edge mask which can be kept farther away from the strip edge is more effective for preventing EOC than the edge plates. The optimum dimension of the edge mask is 30mm in width and 75-100 mm in depth, and installing it at 4-10mm away from the strip edge is most effective. It was confirmed by the commercial line test that the edge mask can reduce EOC from 45% to less than 10%. (author)

  6. Preferential orientation relationships in Ca{sub 2}MnO{sub 4} Ruddlesden-Popper thin films

    Energy Technology Data Exchange (ETDEWEB)

    Lacotte, M.; David, A.; Prellier, W., E-mail: wilfrid.prellier@ensicaen.fr [Laboratoire CRISMAT, CNRS UMR 6508, ENSICAEN, Université de Basse-Normandie, 6 Bd Maréchal Juin, F-14050 Caen Cedex 4 (France); Rohrer, G. S.; Salvador, P. A. [Department of Materials Science and Engineering, Carnegie Mellon University, 5000 Forbes Ave., Pittsburgh, Pennsylvania 15213 (United States)

    2015-07-28

    A high-throughput investigation of local epitaxy (called combinatorial substrate epitaxy) was carried out on Ca{sub 2}MnO{sub 4} Ruddlesden-Popper thin films of six thicknesses (from 20 to 400 nm), all deposited on isostructural polycrystalline Sr{sub 2}TiO{sub 4} substrates. Electron backscatter diffraction revealed grain-over-grain local epitaxial growth for all films, resulting in a single orientation relationship (OR) for each substrate-film grain pair. Two preferred epitaxial ORs accounted for more than 90% of all ORs on 300 different microcrystals, based on analyzing 50 grain pairs for each thickness. The unit cell over unit cell OR ([100][001]{sub film} ∥ [100][001]{sub substrate}, or OR1) accounted for approximately 30% of each film. The OR that accounted for 60% of each film ([100][001]{sub film} ∥ [100][010]{sub substrate}, or OR2) corresponds to a rotation from OR1 by 90° about the a-axis. OR2 is strongly favored for substrate orientations in the center of the stereographic triangle, and OR1 is observed for orientations very close to (001) or to those near the edge connecting (100) and (110). While OR1 should be lower in energy, the majority observation of OR2 implies kinetic hindrances decrease the frequency of OR1. Persistent grain over grain growth and the absence of variations of the OR frequencies with thickness implies that the growth competition is finished within the first few nm, and local epitaxy persists thereafter during growth.

  7. New route to the fabrication of nanocrystalline diamond films

    International Nuclear Information System (INIS)

    Varshney, Deepak; Morell, Gerardo; Palomino, Javier; Resto, Oscar; Gil, Jennifer; Weiner, Brad R.

    2014-01-01

    Nanocrystalline diamond (NCD) thin films offer applications in various fields, but the existing synthetic approaches are cumbersome and destructive. A major breakthrough has been achieved by our group in the direction of a non-destructive, scalable, and economic process of NCD thin-film fabrication. Here, we report a cheap precursor for the growth of nanocrystalline diamond in the form of paraffin wax. We show that NCD thin films can be fabricated on a copper support by using simple, commonplace paraffin wax under reaction conditions of Hot Filament Chemical Vapor Deposition (HFCVD). Surprisingly, even the presence of any catalyst or seeding that has been conventionally used in the state-of-the-art is not required. The structure of the obtained films was analyzed by scanning electron microscopy and transmission electron microscopy. Raman spectroscopy and electron energy-loss spectroscopy recorded at the carbon K-edge region confirm the presence of nanocrystalline diamond. The process is a significant step towards cost-effective and non-cumbersome fabrication of nanocrystalline diamond thin films for commercial production

  8. Performance of rabbits fed Leucaena leucocephala and concentrate ...

    African Journals Online (AJOL)

    Four fryers which were fed the same % of concentrates and Aspilia africana served as the control. Growth rate decreased at the beginning of the study followed by satisfactory growth thereafter. The control animals had a higher growth rate compared to the other two groups (P< 0.05). Alopecia and decreased appetite were ...

  9. Improvement of ZnO TCO film growth for photovoltaic devices by reactive plasma deposition (RPD)

    International Nuclear Information System (INIS)

    Iwata, K.; Sakemi, T.; Yamada, A.; Fons, P.; Awai, K.; Yamamoto, T.; Shirakata, S.; Matsubara, K.; Tampo, H.; Sakurai, K.; Ishizuka, S.; Niki, S.

    2005-01-01

    Reactive plasma deposition (RPD) is a technique for depositing a thin film on a substrate using a pressure-slope type plasma ion gun. This method offers the advantage of low-ion damage, low deposition temperature, large area deposition and high growth rates. Ga-doped zinc oxide (ZnO) thin film was grown on a moving glass substrate by RPD. Evaporation of very small quantity of tungsten from anode electrode by plasma collision lets the resistivity of grown ZnO transparent conductive oxide (TCO) film to increase. However, no reduction of carrier concentration was observed but only reduction of carrier mobility. It indicates that reduction of evaporation of tungsten from anode electrode induces increase of carrier mobility without any increase of carrier concentration. After installation of an anode cooling system in order to avoid the tungsten evaporation, increase of the mobility (37 cm 2 /Vsec) was observed and the lowest resistivity (2.0x10 -4 no. OMEGAno. cm) film was obtained from large size grown ZnO TCO of 200x200 mm at low growth temperature of 200 deg. C with high growth rate of 24 no. muno. m/h

  10. Cobalt sulfide thin films: Chemical growth, reaction kinetics and microstructural analysis

    Energy Technology Data Exchange (ETDEWEB)

    Kamble, S.S. [Thin Film and Solar Studies Research Laboratory, Solapur University, Solapur 413 255, M.S. (India); Sikora, Andrzej [Electrotechnical Institute, Division of Electrotechnology and Materials Science, ul. M Skłodowskiej-Curie 55/61, 50-369 Wroclaw (Poland); Pawar, S.T. [Thin Film and Solar Studies Research Laboratory, Solapur University, Solapur 413 255, M.S. (India); Maldar, N.N. [Polymer Chemistry Department, Solapur University, Solapur 413 255, M.S. (India); Deshmukh, L.P., E-mail: laldeshmukh@gmail.com [Thin Film and Solar Studies Research Laboratory, Solapur University, Solapur 413 255, M.S. (India)

    2015-02-25

    Highlights: • CoS thin films were deposited from an aqueous alkaline bath. • The CoS thin films are polycrystalline with hexagonal crystal structure. • Microstructure consists of multifaceted webbed network of elongated CoS crystallites. • MFM images revealed presence of magnetic regions mimicking surface topography. • Influence of the complexing agents is also stressed by the bandgap measurements. - Abstract: CoS thin films were successfully deposited from an aqueous alkaline bath containing ammonia and TEA as the complexing agents. Under the pre-optimized conditions (temperature = 80 ± 0.5 °C, speed of the substrate rotation = 65 ± 2 rpm and deposition period = 90 min), ammonia and TEA quantities in the reaction bath were found to play a decisive role in the final product yield. Highly uniform, dark sea-green colored and tightly adherent deposits were obtained at our experimental conditions. As-obtained CoS thin films were polycrystalline in nature with hexagonal class of crystal system as derived from the X-ray diffraction analysis. Complex multifaceted webbed network of as-grown CoS crystals elongated and threaded into each other were observed through a scanning electron microscope. Atomic force micrographs revealed collapsing of the hillocks and filling of the valleys triggering decrease in the RMS roughness for increased TEA and NH{sub 3} quantities. Magnetic force microscopy (MFM) was employed to study surface topography in terms of magnetic mapping. MFM images highlighted the existence of the magnetic clusters imitating topography. Broad absorption edge with high absorption coefficient (α ≈ 10{sup 4} cm{sup −1}) was observed for as-grown CoS thin films. Determined values of the optical bandgaps revealed influence of complexing environment on the final product.

  11. Commercial Technology at the Tactical Edge

    Science.gov (United States)

    2013-06-01

    Software defined Networking ( SDN ), Autonomic Networking , and Cognitive Radios for Spectrum Sharing. Software defined ...www.opennetworking.org/. 41 Pan, P., “ Software Defined Network ( SDN ) Problem Statement and Use Cases for Data Center Applications,” IETF, 2011, http://tools.ietf.org/id...routinely at the tactical edge in the near future. These include software defined networking , autonomous networks , cognitive

  12. In situ growth rate measurements during plasma-enhanced chemical vapour deposition of vertically aligned multiwall carbon nanotube films

    International Nuclear Information System (INIS)

    Joensson, M; Nerushev, O A; Campbell, E E B

    2007-01-01

    In situ laser reflectivity measurements are used to monitor the growth of multiwalled carbon nanotube (MWCNT) films grown by DC plasma-enhanced chemical vapour deposition (PECVD) from an iron catalyst film deposited on a silicon wafer. In contrast to thermal CVD growth, there is no initial increase in the growth rate; instead, the initial growth rate is high (as much as 10 μm min -1 ) and then drops off rapidly to reach a steady level (2 μm min -1 ) for times beyond 1 min. We show that a limiting factor for growing thick films of multiwalled nanotubes (MWNTs) using PECVD can be the formation of an amorphous carbon layer at the top of the growing nanotubes. In situ reflectivity measurements provide a convenient technique for detecting the onset of the growth of this layer

  13. Climate threats on growth of rear-edge European beech peripheral populations in Spain

    Science.gov (United States)

    Dorado-Liñán, I.; Akhmetzyanov, L.; Menzel, A.

    2017-12-01

    European beech ( Fagus sylvatica L.) forests in the Iberian Peninsula are a clear example of a temperate forest tree species at the rear edge of its large distribution area in Europe. The expected drier and warmer climate may alter tree growth and species distribution. Consequently, the peripheral populations will most likely be the most threatened ones. Four peripheral beech forests in the Iberian Peninsula were studied in order to assess the climate factors influencing tree growth for the last six decades. The analyses included an individual tree approach in order to detect not only the changes in the sensitivity to climate but also the potential size-mediated sensitivity to climate. Our results revealed a dominant influence of previous and current year summer on tree growth during the last six decades, although the analysis in two equally long periods unveiled changes and shifts in tree sensitivity to climate. The individual tree approach showed that those changes in tree response to climate are not size dependent in most of the cases. We observed a reduced negative effect of warmer winter temperatures at some sites and a generalized increased influence of previous year climatic conditions on current year tree growth. These results highlight the crucial role played by carryover effects and stored carbohydrates for future tree growth and species persistence.

  14. [A longitudinal study of urban-rural growth differences among infants fed with breast milk in six economically better areas in China].

    Science.gov (United States)

    2012-07-01

    To understand the differences between urban and rural breast-fed infants' growth patterns. In economically better regions of six provinces in China, 1147 urban and 1058 rural subjects were recruited by the project respectively, and their longitudinal weight, length, and head circumference were measured from birth to 12 months old. The monitoring frequency was 16 times in total. Analysis was conducted to compare the growth patterns between 497 of urban and 764 of rural subjects meeting the breast-fed babies definition by WHO. During the first year after birth, urban breast-feeding boys' weight, length, head circumference increased by 7.13 kg, 26.9 cm, and 12.4 cm respectively, and 6.60 kg, 26.1 cm, and 11.9 cm for girls. The corresponding values of rural population were 6.70 kg, 25.7 cm and 12.4 cm for boys, and 6.20 kg, 25.0 cm, and 11.8 cm for girls respectively. The gaps existed in the three physical indexes between urban and rural breastfeeding babies were 110 - 480 g, 1.2 - 2.0 cm and 0.1 - 0.6 cm for boys, and 200 - 510 g, 1.3 - 1.7 cm, and 0.4 - 0.6 cm for girls. In about 50% of monitoring age points, monthly increments of urban boy's weight presented higher than rural samples, but only 17% for girl's weight, and boy/girl's length and head circumference. The urban-rural regional gaps in breast-fed infants' physical development were not optimistic and seemed to be wider in boys than in girls. There are still large room for improvement for growth of infants in rural areas.

  15. Amorphous-tetrahedral diamondlike carbon layered structures resulting from film growth energetics

    Science.gov (United States)

    Siegal, M. P.; Barbour, J. C.; Provencio, P. N.; Tallant, D. R.; Friedmann, T. A.

    1998-08-01

    High-resolution transmission electron microscopy (HRTEM) shows that amorphous-tetrahedral diamondlike carbon (a-tC) films grown by pulsed-laser deposition on Si(100) consist of three-to-four layers, depending on the growth energetics. We estimate the density of each layer using both HRTEM image contrast and Rutherford backscattering spectrometry. The first carbon layer and final surface layer have relatively low density. The bulk of the film between these two layers has higher density. For films grown under the most energetic conditions, there exists a superdense a-tC layer between the interface and bulk layers. The density of all four layers, and the thickness of the surface and interfacial layers, correlate well with the energetics of the depositing carbon species.

  16. Growth and characteristics of PbS/polyvinyl alcohol nanocomposites for flexible high dielectric thin film applications

    International Nuclear Information System (INIS)

    Hmar, J.J.L.; Majumder, T.; Mondal, S.P.

    2016-01-01

    PbS/polyvinyl alcohol (PbS/PVA) nanocomposites have been grown by a chemical bath deposition process at various growth temperatures (60–100 °C). Transmission electron microscopy (TEM) study revealed the formation of PbS nanoparticles of diameter 6–20 nm encapsulated in PVA matrix. Optical band gap of the nanocomposite films have been found to decrease (1.45 eV–0.67 eV) with increase in growth temperature from 60 °C to 100 °C. The impedance measurements have been carried out by depositing the PbS/PVA films on indium tin oxide (ITO) coated flexible polyethylene terephthalate (PET) substrates. The room temperature dielectric permittivity and ac conductivity measurements have been carried out for ITO/PbS/PVA/Al devices deposited at various growth temperatures. The nanocomposite films demonstrate superior dielectric permittivity compare to pure PVA polymer. The flexibility studies of ITO/PbS/PVA/Al devices have been performed at different bending angles. - Highlights: • PbS nanoparticles of diameter 6–20 nm were grown in polyvinyl (PVA) matrix. • Optical band gap of nanocomposite films was varied from 1.45–0.67 eV. • The nanocomposite thin films demonstrated superior dielectric permittivity. • Flexibility study of thin film devices was performed at various bending angles.

  17. Physics constraints on tokamak edge operational space and extrapolation to ITER

    International Nuclear Information System (INIS)

    Igitkhanov, Yu.; Janeschitz, G.; Sugihara, M.; Pacher, H.D.; Post, D.E.; Pacher, G.W.; Pogutse, O.P.

    1998-01-01

    This paper emphasises the theoretical understanding of the physical processes in the edge tokamak plasma and their attendant uncertainties and constraints. The various operational boundaries are represented in the edge operational space (EOS) diagram, the space of edge density and temperature, defined at the top of the H-mode transport barrier. The EOS is governed by four boundaries representing physical constraints for the edge plasma parameters. The first boundary represents the onset of type I ELM instabilities in terms of a critical pressure gradient for MHD stability at the edge which defines the maximum pedestal temperature for a given density once the width of the H-mode transport barrier at the edge (pedestal width) is known. The ideal ballooning mode is a candidate for this instability. The second boundary defines the boundary between type III ELM's, which are probably resistive MHD modes, and the ELM-free region. (orig.)

  18. The influence of growth temperature on the structural characteristics of YBa2Cu3O7-δ films: a Raman scattering study

    International Nuclear Information System (INIS)

    Belousov, M.V.; Davydov, V.Yu.; Sherman, A.B.

    1993-01-01

    Orientation of YBa 2 Cu 3 O 7-δ films at the surface and at the film-(100) MgO substrate interface for various growth temperatures T s have been studied using Raman scattering. On the film-substrate interface the films were c-oriented for T s >670 degrees C and a-oriented for lower growth temperatures. Films grown at T s approximately=670 degrees C to a thickness >0.2 mu m contained a transition from the c- to the a-orientation near the surface. A possible mechanism for the influence of growth temperature on the YBa 2 Cu 3 O 7-δ film orientation is discussed. (author)

  19. Growth and immune response of Litopenaeus vannamei fed on β-(1, 3 glucan and poly-β hydroxybutyrate

    Directory of Open Access Journals (Sweden)

    , Sarmin

    2015-05-01

    Full Text Available ABSTRACT This research was aimed to examine the growth performance and non-specific immune response of Pacific white shrimp (Litopenaeus vannamei fed on the diet supplemented with β-(1,3 glucan (BG and poly-β-hydroxybutyrate (PHB as feed additives. Shrimp juvenile at an initial body weight of 2.06±0.03 g was randomly distributed into 12 units of aquaria at a density of 20 shrimps/tank and reared for 42 days. The treatments applied in this study were control (without feed additives, 1.5 g/kg BG, 10 g/kg PHB and 1,5 g/kg BG+10 g/kg PHB. Results showed that shrimp fed on 1.5 /kg BG-supplemented feed had significantly higher growth performance and non-specific immune response. Keywords: growth, shrimp, non-specific immune response, Litopenaeus vannamei  ABSTRAK Penelitian ini bertujuan untuk menguji kinerja pertumbuhan dan respons imun nonspesifik udang vaname Litopenaeus vannamei yang diberi pakan dengan penambahan feed additive berupa β-(1,3 glukan (BG dan poli-β-hidroksibutirat (PHB. Juvenil udang 2,06±0,03 g dipelihara pada 12 unit akuarium dengan empat perlakuan dan tiga ulangan, serta padat tebar 20 ekor/tank selama 42 hari pemeliharaan. Perlakuan yang diberikan dalam penelitian ini yaitu penambahan BG (1,5 g/kg, PHB (10 g/kg, dan BG (1,5 g/kg+PHB (10 g/kg, serta kontrol (tanpa penambahan feed additive. Hasil penelitian menunjukkan bahwa udang yang diberi 1,5 g/kg BG memiliki kinerja pertumbuhan dan respons imun nonspesifik yang terbaik. Kata kunci: pertumbuhan, udang, respons imun nonspesifik, Litopenaeus vannamei

  20. Film holder for radiographing tubing

    International Nuclear Information System (INIS)

    Davis, E.V.; Foster, B.E.

    1976-01-01

    A film cassette is described which may be easily placed about tubing or piping and readily held in place while radiographic inspection is performed. A pair of precurved light-impervious semi-rigid plastic sheets, hinged at one edge, enclose sheet film together with any metallic foils or screens. Other edges are made light-tight with removable caps, and the entire unit is held securely about the object to be radiographed with a releasable fastener such as a strip of Velcro

  1. Film holder for radiographing tubing

    Science.gov (United States)

    Davis, Earl V.; Foster, Billy E.

    1976-01-01

    A film cassette is provided which may be easily placed about tubing or piping and readily held in place while radiographic inspection is performed. A pair of precurved light-impervious semi-rigid plastic sheets, hinged at one edge, enclose sheet film together with any metallic foils or screens. Other edges are made light-tight with removable caps, and the entire unit is held securely about the object to be radiographed with a releasable fastener such as a strip of Velcro.

  2. Evaluation of commercially available enzymes, probiotics, or yeast on apparent total-tract nutrient digestion and growth in nursery and finishing pigs fed diets containing corn dried distillers grains with solubles

    Science.gov (United States)

    The ability of enzymes, direct fed microbials, or yeast to enhance nutrient utilization or growth performance in nursery or finishing pigs fed diets containing increased levels of corn fiber from dried distillers grains with solubles (DDGS) is largely unknown. Ten commercially available feed additiv...

  3. Growth performance and total tract nutrient digestion for Holstein heifers limit-fed diets high in distillers grains with different forage particle sizes

    Science.gov (United States)

    This study evaluated dairy heifer growth performance and total tract nutrient digestion when fed diets high in dried distillers grains with solubles (DDGS) with different forage particle size. An 8-wk randomized complete block design study was conducted utilizing twenty-two Holstein heifers (123 ±...

  4. Subtractive fabrication of ferroelectric thin films with precisely controlled thickness

    Science.gov (United States)

    Ievlev, Anton V.; Chyasnavichyus, Marius; Leonard, Donovan N.; Agar, Joshua C.; Velarde, Gabriel A.; Martin, Lane W.; Kalinin, Sergei V.; Maksymovych, Petro; Ovchinnikova, Olga S.

    2018-04-01

    The ability to control thin-film growth has led to advances in our understanding of fundamental physics as well as to the emergence of novel technologies. However, common thin-film growth techniques introduce a number of limitations related to the concentration of defects on film interfaces and surfaces that limit the scope of systems that can be produced and studied experimentally. Here, we developed an ion-beam based subtractive fabrication process that enables creation and modification of thin films with pre-defined thicknesses. To accomplish this we transformed a multimodal imaging platform that combines time-of-flight secondary ion mass spectrometry with atomic force microscopy to a unique fabrication tool that allows for precise sputtering of the nanometer-thin layers of material. To demonstrate fabrication of thin-films with in situ feedback and control on film thickness and functionality we systematically studied thickness dependence of ferroelectric switching of lead-zirconate-titanate, within a single epitaxial film. Our results demonstrate that through a subtractive film fabrication process we can control the piezoelectric response as a function of film thickness as well as improve on the overall piezoelectric response versus an untreated film.

  5. Growth of epitaxial Pt thin films on (0 0 1) SrTiO{sub 3} by rf magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Kahsay, A. [Departament de Física Aplicada i Òptica, Universitat de Barcelona, 08028 Barcelona (Spain); Polo, M.C., E-mail: mcpolo@ub.edu [Departament de Física Aplicada i Òptica, Universitat de Barcelona, 08028 Barcelona (Spain); Ferrater, C.; Ventura, J. [Departament de Física Aplicada i Òptica, Universitat de Barcelona, 08028 Barcelona (Spain); Rebled, J.M. [Departament d’Electrònica, Universitat de Barcelona Institut de Nanociència i Nanotecnologia IN 2UB, 08028 Barcelona (Spain); Varela, M. [Departament de Física Aplicada i Òptica, Universitat de Barcelona, 08028 Barcelona (Spain)

    2014-07-01

    The growth of platinum thin film by rf magnetron sputtering on SrTiO{sub 3}(0 0 1) substrates for oxide based devices was investigated. Platinum films grown at temperatures higher than 750 °C were epitaxial ([1 0 0]Pt(0 0 1)//[1 0 0]STO(0 0 1)), whereas at lower temperatures Pt(1 1 1) films were obtained. The surface morphology of the Pt films showed a strong dependence on the deposition temperature as was revealed by atomic force microscopy (AFM). At elevated temperatures there is a three-dimensional (3D) growth of rectangular atomically flat islands with deep boundaries between them. On the other hand, at low deposition temperatures, a two-dimensional (2D) layered growth was observed. The transition from 2D to 3D growth modes was observed that occurs for temperatures around 450 °C. The obtained epitaxial thin films also formed an atomically sharp interface with the SrTiO{sub 3}(0 0 1) substrate as confirmed by HRTEM.

  6. Investigation of plasma dynamics during the growth of amorphous titanium dioxide thin films

    Science.gov (United States)

    Kim, Jin-Soo; Jee, Hyeok; Yu, Young-Hun; Seo, Hye-Won

    2018-06-01

    We have grown amorphous titanium dioxide thin films by reactive DC sputtering method using a different argon/oxygen partial pressure at a room temperature. The plasma dynamics of the process, reactive and sputtered gas particles was investigated via optical emission spectroscopy. We then studied the correlations between the plasma states and the structural/optical properties of the films. The growth rate and morphology of the titanium dioxide thin films turned out to be contingent with the population and the energy profile of Ar, O, and TiO plasma. In particular, the films grown under energetic TiO plasma have shown a direct band-to-band transition with an optical energy band gap up to ∼4.2 eV.

  7. Growth Related Carrier Mobility Enhancement of Pentacene Thin-Film Transistors with High-k Oxide Gate Dielectric

    International Nuclear Information System (INIS)

    Ai-Fang, Yu; Qiong, Qi; Peng, Jiang; Chao, Jiang

    2009-01-01

    Carrier mobility enhancement from 0.09 to 0.59 cm 2 /Vs is achieved for pentacene-based thin-film transistors (TFTs) by modifying the HfO 2 gate dielectric with a polystyrene (PS) thin film. The improvement of the transistor's performance is found to be strongly related to the initial film morphologies of pentacene on the dielectrics. In contrast to the three-dimensional island-like growth mode on the HfO 2 surface, the Stranski-Krastanov growth mode on the smooth and nonpolar PS/HfO 2 surface is believed to be the origin of the excellent carrier mobility of the TFTs. A large well-connected first monolayer with fewer boundaries is formed via the Stranski–Krastanov growth mode, which facilitates a charge transport parallel to the substrate and promotes higher carrier mobility. (cross-disciplinary physics and related areas of science and technology)

  8. Molecular beam epitaxy growth of InSb1−xBix thin films

    DEFF Research Database (Denmark)

    Song, Yuxin; Wang, Shumin; Saha Roy, Ivy

    2013-01-01

    Molecular beam epitaxy growth for InSb1−xBix thin films on (100) GaAs substrates is reported. Successful Bi incorporation for 2% is achieved, and up to 70% of the incorporated Bi atoms are at substitutional sites. The effects of growth parameters on Bi incorporation and surface morphology are stu...

  9. Initial stages of the ion-beam assisted epitaxial GaN film growth on 6H-SiC(0001)

    International Nuclear Information System (INIS)

    Neumann, L.; Gerlach, J.W.; Rauschenbach, B.

    2012-01-01

    Ultra-thin gallium nitride (GaN) films were deposited using the ion-beam assisted molecular-beam epitaxy technique. The influence of the nitrogen ion to gallium atom flux ratio (I/A ratio) during the early stages of GaN nucleation and thin film growth directly, without a buffer layer on super-polished 6H-SiC(0001) substrates was studied. The deposition process was performed at a constant substrate temperature of 700 °C by evaporation of Ga and irradiation with hyperthermal nitrogen ions from a constricted glow-discharge ion source. The hyperthermal nitrogen ion flux was kept constant and the kinetic energy of the ions did not exceed 25 eV. The selection of different I/A ratios in the range from 0.8 to 3.2 was done by varying the Ga deposition rate between 5 × 10 13 and 2 × 10 14 at. cm −2 s −1 . The crystalline surface structure during the GaN growth was monitored in situ by reflection high-energy electron diffraction. The surface topography of the films as well as the morphology of separated GaN islands on the substrate surface was examined after film growth using a scanning tunneling microscope without interruption of ultra-high vacuum. The results show, that the I/A ratio has a major impact on the properties of the resulting ultra-thin GaN films. The growth mode, the surface roughness, the degree of GaN coverage of the substrate and the polytype mixture depend notably on the I/A ratio. - Highlights: ► Ultra-thin epitaxial GaN films prepared by hyperthermal ion-beam assisted deposition. ► Surface structure and topography studied during and after initial growth stages. ► Growth mode dependent on nitrogen ion to gallium atom flux ratio. ► Change from three-dimensional to two-dimensional growth for Ga-rich growth conditions.

  10. The properties of TiN ultra-thin films grown on SiO{sub 2} substrate by reactive high power impulse magnetron sputtering under various growth angles

    Energy Technology Data Exchange (ETDEWEB)

    Shayestehaminzadeh, S., E-mail: ses30@hi.is [Science Institute, University of Iceland, Dunhaga 3, IS-107 Reykjavik (Iceland); Tryggvason, T.K. [Science Institute, University of Iceland, Dunhaga 3, IS-107 Reykjavik (Iceland); Karlsson, L. [School of Engineering and Science, Jacobs University Bremen, Campus Ring 1, 28759 Bremen (Germany); Olafsson, S. [Science Institute, University of Iceland, Dunhaga 3, IS-107 Reykjavik (Iceland); Gudmundsson, J.T. [Science Institute, University of Iceland, Dunhaga 3, IS-107 Reykjavik (Iceland); University of Michigan-Shanghai Jiao Tong University, University Joint Institute, Shanghai Jiao Tong University, 800 Dong Chuan Road, Shanghai 200240 (China)

    2013-12-02

    Thin TiN films were grown on SiO{sub 2} by reactive high power impulse magnetron sputtering (HiPIMS) and conventional dc magnetron sputtering (dcMS) while varying the angle between the target and the substrate surface from 0° (on-axis growth) to 90° (off-axis growth). Surface morphology and structural characterization were carried out using X-ray diffraction and reflection methods and the film properties were compared. The dcMS process shows higher growth rate than the HiPIMS process for on-axis grown films but the dcMS growth rate drops drastically for off-axis growth while the HiPIMS growth rate decreases slowly with increased angle between target and substrate for off-axis growth and becomes comparable to the dcMS growth rate. The dcMS grown films exhibit angle dependence in the density and surface roughness while the HiPIMS process creates denser and smoother films that are less angle dependent in all aspects. It was observed that the HiPIMS grown films remain poly-crystalline for all angles of rotation while the dcMS grown films are somewhat amorphous after 60°. The [111] and [200] grain sizes are comparable to the total film thickness in the HiPIMS grown films for all angles of rotation. In the case of dcMS, the [111], [200] and [220] grain sizes are roughly of the same size and much smaller than the total thickness for all growth angles except at 60° and higher. - Highlights: • TiN films were grown on SiO{sub 2} by HiPIMS and dcMS under various growth angles. • Influence of growth angle α = 0–90° on deposition rate and film quality was studied. • The HiPIMS process produces denser and smoother films for all growth angles. • At α = 0°, the growth rate of HiPIMS is 25% of dcMS while it is 50% at 90°. • The HiPIMS grown films remain poly-crystalline for all growth angles.

  11. Canopy gap edge determination and the importance of gap edges for plant diversity

    Directory of Open Access Journals (Sweden)

    D. Salvador-Van Eysenrode

    2002-01-01

    Full Text Available Canopy gaps, i.e. openings in the forest cover caused by the fall of structural elements, are considered to be important for the maintenance of diversity and for the forest cycle. A gap can be considered as a young forest patch in the forest matrix, composed of interior surrounded by an edge, both enclosed by a perimeter. Much of the attention has been focused on the gap interior. However, at gap edges the spectrum of regeneration opportunities for plants may be larger than in the interior. Although definitions of gap are still discussed, any definition can describe it in an acceptable way, if justified, but defining edges is complicated and appropriate descriptors should be used. A method to determine gap interior and edge, using light as a descriptor, is presented with an example of gaps from a beech forest (Fagus sylvatica in Belgium. Also, the relevance and implications of gap edges for plant diversity and calculation of forest turnover is discussed.

  12. Improving information density in ferroelectric polymer films by using nanoimprinted gratings

    Science.gov (United States)

    Martínez-Tong, Daniel E.; Soccio, Michela; Rueda, Daniel R.; Nogales, Aurora; García-Gutiérrez, Mari Cruz; Ezquerra, Tiberio A.

    2015-03-01

    The development of polymer non-volatile memories depends on the effective fabrication of devices with high density of information. Well-defined low aspect ratio nanogratings on thin films of poly(vinylidene fluoride-trifluoroethylene) copolymers can be fabricated by using Nanoimprint Lithography (NIL). By using these nanogratings, an improved management of writing and reading information can be reached as revealed by Piezoresponse Force Microscopy (PFM). Structural investigation by means of Grazing Incidence X-ray (GIX) scattering techniques indicates that the physical confinement generated by nanoimprint promotes the development of smaller and edge-on oriented crystals. Our results evidence that one-dimensional nanostructuring can be a straightforward approach to improve the control of the polarization in ferroelectric polymer thin films.

  13. Growth and transport properties of thin Co-based Heusler films; Wachstum und Transporteigenschaften duenner Co-basierter Heusler-Filme

    Energy Technology Data Exchange (ETDEWEB)

    Schneider, Horst

    2010-07-01

    During this work, thin films of Co-based Heusler compounds were deposited under optimized conditions, and their structural, magnetic, and transport properties were investigated. The growth of the thin film samples was accomplished by two different methods. At first Co{sub 2}Cr{sub 0.6}Fe{sub 0.4}Al and Co{sub 2}FeSi were deposited by sputter deposition from stoichiometric targets. This is considered the standard technique for the preparation of thin Heusler films. Also for the compounds investigated here it resulted in samples with a high degree of L2{sub 1} ordering. An excess of Fe atoms on Si sites was discovered by a detailed X-ray analysis in conjunction with NMR spectroscopy. The choice of different substrates allowed the adjustment of the growth direction. On the other hand, bulk magnetometry revealed that these sputter deposited films exhibit only a reduced magnetic moment, which is an indication of a reduced spin asymmetry at the Fermi level. One source of this problem seems to be a high residual gas pressure, which leads to an increased sample contamination. To improve this situation, a pulsed laser deposition system was constructed and put into operation. The resulting film growth under ultra-high vacuum conditions led to a further improvement of the short-range crystallographic ordering and a clear enhancement of the magnetic properties. The additional use of a metallic buffer layer resulted in samples with a smooth surface. This opens the door for a number of further analytical experiments, such as tunneling spectroscopy or Brillouin light scattering. After this successful demonstration of this growth technique, an additional method for the flexible variation of the film stoichiometry was implemented. In this work, this method was successfully applied in the deposition of Co{sub 2}Mn{sub 1-x}Fe{sub x}Si films. All samples in this series show a high degree of atomic ordering. Their magnetization values are compatible with the Slater-Pauling rule for

  14. Meniscus-assisted solution printing of large-grained perovskite films for high-efficiency solar cells

    Science.gov (United States)

    He, Ming; Li, Bo; Cui, Xun; Jiang, Beibei; He, Yanjie; Chen, Yihuang; O'Neil, Daniel; Szymanski, Paul; Ei-Sayed, Mostafa A.; Huang, Jinsong; Lin, Zhiqun

    2017-07-01

    Control over morphology and crystallinity of metal halide perovskite films is of key importance to enable high-performance optoelectronics. However, this remains particularly challenging for solution-printed devices due to the complex crystallization kinetics of semiconductor materials within dynamic flow of inks. Here we report a simple yet effective meniscus-assisted solution printing (MASP) strategy to yield large-grained dense perovskite film with good crystallization and preferred orientation. Intriguingly, the outward convective flow triggered by fast solvent evaporation at the edge of the meniscus ink imparts the transport of perovskite solutes, thus facilitating the growth of micrometre-scale perovskite grains. The growth kinetics of perovskite crystals is scrutinized by in situ optical microscopy tracking to understand the crystallization mechanism. The perovskite films produced by MASP exhibit excellent optoelectronic properties with efficiencies approaching 20% in planar perovskite solar cells. This robust MASP strategy may in principle be easily extended to craft other solution-printed perovskite-based optoelectronics.

  15. modified edge fed sierpinski carpet miniaturized microstrip patch

    African Journals Online (AJOL)

    user

    2016-07-03

    Jul 3, 2016 ... growth recorded by wireless communication is the antenna. Antenna ... transmission cannot be carried out without the use of an antenna. Low cost and ..... for electromagnetic. EM energy scavenging,” Proceedings of the 34th.

  16. Nucleation, growth and evolution of calcium phosphate films on calcite.

    Science.gov (United States)

    Naidu, Sonia; Scherer, George W

    2014-12-01

    Marble, a stone composed of the mineral calcite, is subject to chemically induced weathering in nature due to its relatively high dissolution rate in acid rain. To protect monuments and sculpture from corrosion, we are investigating the application of thin layers of hydroxyapatite (HAP) onto marble. The motivation for using HAP is its low dissolution rate and crystal and lattice compatibility with calcite. A mild, wet chemical synthesis route, in which diammonium hydrogen phosphate salt was reacted with marble, alone and with cationic and anionic precursors under different reaction conditions, was used to produce inorganic HAP layers on marble. Nucleation and growth on the calcite substrate was studied, as well as metastable phase evolution, using scanning electron microscopy, grazing incidence X-ray diffraction, and atomic force microscopy. Film nucleation was enhanced by surface roughness. The rate of nucleation and the growth rate of the film increased with cationic (calcium) and anionic (carbonate) precursor additions. Calcium additions also influenced phase formation, introducing a metastable phase (octacalcium phosphate) and a different phase evolution sequence. Copyright © 2014 Elsevier Inc. All rights reserved.

  17. Growth of thin films of TiN on MgO(100) monitored by high-pressure RHEED

    DEFF Research Database (Denmark)

    Pryds, Nini; Cockburn, D.; Rodrigo, Katarzyna Agnieszka

    2008-01-01

    Reflection high-energy electron diffraction (RHEED) operated at high pressure has been used to monitor the initial growth of titanium nitride (TiN) thin films on single-crystal (100) MgO substrates by pulsed laser deposition (PLD). This is the first RHEED study where the growth of TiN films...... electron microscopy. These observations are in good agreement with the three-dimensional Volmer-Weber growth type, by which three-dimensional crystallites are formed and later cause a continuous surface roughening. This leads to an exponential decrease in the intensity of the specular spot in the RHEED...

  18. Effect of sputtered lanthanum hexaboride film thickness on field emission from metallic knife edge cathodes

    Science.gov (United States)

    Kirley, M. P.; Novakovic, B.; Sule, N.; Weber, M. J.; Knezevic, I.; Booske, J. H.

    2012-03-01

    We report experiments and analysis of field emission from metallic knife-edge cathodes, which are sputter-coated with thin films of lanthanum hexaboride (LaB6), a low-work function material. The emission current is found to depend sensitively on the thickness of the LaB6 layer. We find that films thinner than 10 nm greatly enhance the emitted current. However, cathodes coated with a thicker layer of LaB6 are observed to emit less current than the uncoated metallic cathode. This result is unexpected due to the higher work function of the bare metal cathode. We show, based on numerical calculation of the electrostatic potential throughout the structure, that the external (LaB6/vacuum) barrier is reduced with respect to uncoated samples for both thin and thick coatings. However, this behavior is not exhibited at the internal (metal/LaB6) barrier. In thinly coated samples, electrons tunnel efficiently through both the internal and external barrier, resulting in current enhancement with respect to the uncoated case. In contrast, the thick internal barrier in thickly coated samples suppresses current below the value for uncoated samples in spite of the lowered external barrier. We argue that this coating thickness variation stems from a relatively low (no higher than 1018 cm-3) free carrier density in the sputtered polycrystalline LaB6.

  19. Synchrotron x-ray-diffraction study of the structure and growth of Xe films adsorbed on the Ag(111) surface

    International Nuclear Information System (INIS)

    Dai, P.; Wu, Z.; Angot, T.; Wang, S.; Taub, H.; Ehrlich, S.N.

    1999-01-01

    Synchrotron x-ray scattering has been used to investigate the structure and growth of perhaps the simplest of all films: xenon physisorbed on the Ag(111) surface. High-resolution x-ray scans of the in-plane structure and lower-resolution scans (specular and nonspecular) of the out-of-plane order were performed. The Xe films were prepared under both quasiequilibrium and kinetic growth conditions, and have fewer structural defects than those investigated previously by others on graphite substrates. Under quasiequilibrium conditions, the bulk Xe-Xe spacing is reached at monolayer completion, and the monolayer and bilayer lattice constants at coexistence are inferred equal to within 0.005 Angstrom, consistent with theoretical calculations. The Xe/vacuum interface profile for a complete monolayer and bilayer grown at quasiequilibrium is found to be sharper than for kinetically grown films. At coverages above two layers, diffraction scans along the Xe(01l) rod for quasiequilibrated films are consistent with the presence of two domains having predominantly an ABC stacking sequence and rotated 60 degree with respect to each other about the surface normal. Annealing of these films alters neither the population of the two domains nor the fraction of ABA stacking faults. The thickest film grown under quasiequilibrium conditions exceeds 220 Angstrom (resolution limited). Under kinetic growth conditions, x-ray intensity oscillations at the Xe anti-Bragg position of the specular rod are observed as a function of time, indicating nearly layer-by-layer growth. Up to four complete oscillations corresponding to a film of eight layers have been observed before the intensity is damped out; the number of oscillations is found to depend on the substrate temperature, the growth rate, and the quality of the Ag(111) substrate. The specular reflectivity from kinetically grown films at nominal coverages of three and four layers has been analyzed using a Gaussian model which gives a film

  20. Epitaxial growth of topological insulator Bi{sub 2}Se{sub 3} film on Si(111) with atomically sharp interface

    Energy Technology Data Exchange (ETDEWEB)

    Bansal, Namrata [Department of Electrical and Computer Engineering, Rutgers, State University of New Jersey, Piscataway, NJ 08854 (United States); Kim, Yong Seung [Graphene Research Institute, Sejong University, Seoul 143-747 (Korea, Republic of); Edrey, Eliav; Brahlek, Matthew; Horibe, Yoichi [Department of Physics and Astronomy, Rutgers, State University of New Jersey, Piscataway, NJ 08854 (United States); Iida, Keiko; Tanimura, Makoto [Research Department, Nissan Arc, Ltd. Yokosuka, Kanagawa 237-0061 (Japan); Li Guohong; Feng Tian; Lee, Hang-Dong; Gustafsson, Torgny; Andrei, Eva [Department of Physics and Astronomy, Rutgers, State University of New Jersey, Piscataway, NJ 08854 (United States); Oh, Seongshik, E-mail: ohsean@physics.rutgers.edu [Department of Physics and Astronomy, Rutgers, the State University of New Jersey, Piscataway, NJ 08854 (United States)

    2011-10-31

    Atomically sharp epitaxial growth of Bi{sub 2}Se{sub 3} films is achieved on Si(111) substrate with molecular beam epitaxy. Two-step growth process is found to be a key to achieve interfacial-layer-free epitaxial Bi{sub 2}Se{sub 3} films on Si substrates. With a single-step high temperature growth, second phase clusters are formed at an early stage. On the other hand, with low temperature growth, the film tends to be disordered even in the absence of a second phase. With a low temperature initial growth followed by a high temperature growth, second-phase-free atomically sharp interface is obtained between Bi{sub 2}Se{sub 3} and Si substrate, as verified by reflection high energy electron diffraction (RHEED), transmission electron microscopy (TEM) and X-ray diffraction. The lattice constant of Bi{sub 2}Se{sub 3} is observed to relax to its bulk value during the first quintuple layer according to RHEED analysis, implying the absence of strain from the substrate. TEM shows a fully epitaxial structure of Bi{sub 2}Se{sub 3} film down to the first quintuple layer without any second phase or an amorphous layer.

  1. Growth, intake, and health of Holstein heifer calves fed an enhanced preweaning diet with or without postweaning exogenous estrogen.

    Science.gov (United States)

    Geiger, A J; Parsons, C L M; James, R E; Akers, R M

    2016-05-01

    Research has shown that changes in nutrition both before and after weaning can affect mammary development. Additionally, estrogen is known to be a potent mammogenic stimulant. Our objectives were to determine effects of altered preweaning feeding and exogenous estradiol postweaning on growth, intake, and health. Thirty-six Holstein heifer calves were reared on (1) a restricted milk replacer (MR) diet fed at 0.44kg powder dry matter (DM)/day [R; 20.9% crude protein (CP), 19.8% fat, DM basis], or (2) an enhanced MR fed at 1.08kg powder DM/d (EH; 28.9% CP, 26.2% fat, DM basis). The MR feeding was reduced 50% during wk 8 to prepare for weaning. Starter was offered after wk 4 but balanced between treatments. Body weight and frame were measured weekly with intakes and health monitored daily. At weaning, a subset of calves were slaughtered (n=6/diet). Enhanced-fed calves had greater carcass, thymus, liver, spleen, and mammary gland (parenchyma and mammary fat pad) weights. The EH calves also had greater average daily gain (ADG) starting during wk 1 (0.36 vs. -0.06kg/d) and lasting through wk 7 (1.00 vs. 0.41kg/d). Remaining calves received estrogen implants or placebo and were slaughtered at the end of wk 10, creating 4 treatments: (1) R, (2) R + estrogen (R-E2), (3) EH, and (4) EH + estrogen (EH-E2). Postweaning ADG was similar between R, EH, and EH-E2 calves, but greater in R-E2 calves than E calves. The EH-E2 calves had the heaviest mammary glands, and R-E2 calves had heavier mammary glands than R calves. The EH calves consumed more MR DM, CP, and fat preweaning. The R-fed calves consumed more starter DM preweaning. Fecal score was greater for EH calves (1.74 vs. 1.50) preweaning, but days medicated did not differ. Fecal scores were lower for R-E2 calves postweaning. Improved preweaning feeding of calves increased body weights and frame measures. Differences in body weights remained postweaning. Enhanced-fed calves showed greater ADG during the preweaning period but

  2. High Growth Rate Deposition of Hydrogenated Amorphous Silicon-Germanium Films and Devices Using ECR-PECVD

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Yong [Iowa State Univ., Ames, IA (United States)

    2002-01-01

    Hydrogenated amorphous silicon germanium films (a-SiGe:H) and devices have been extensively studied because of the tunable band gap for matching the solar spectrum and mature the fabrication techniques. a-SiGe:H thin film solar cells have great potential for commercial manufacture because of very low cost and adaptability to large-scale manufacturing. Although it has been demonstrated that a-SiGe:H thin films and devices with good quality can be produced successfully, some issues regarding growth chemistry have remained yet unexplored, such as the hydrogen and inert-gas dilution, bombardment effect, and chemical annealing, to name a few. The alloying of the SiGe introduces above an order-of-magnitude higher defect density, which degrades the performance of the a-SiGe:H thin film solar cells. This degradation becomes worse when high growth-rate deposition is required. Preferential attachment of hydrogen to silicon, clustering of Ge and Si, and columnar structure and buried dihydride radicals make the film intolerably bad. The work presented here uses the Electron-Cyclotron-Resonance Plasma-Enhanced Chemical Vapor Deposition (ECR-PECVD) technique to fabricate a-SiGe:H films and devices with high growth rates. Helium gas, together with a small amount of H2, was used as the plasma species. Thickness, optical band gap, conductivity, Urbach energy, mobility-lifetime product, I-V curve, and quantum efficiency were characterized during the process of pursuing good materials. The microstructure of the a-(Si,Ge):H material was probed by Fourier-Transform Infrared spectroscopy. They found that the advantages of using helium as the main plasma species are: (1) high growth rate--the energetic helium ions break the reactive gas more efficiently than hydrogen ions; (2) homogeneous growth--heavy helium ions impinging on the surface promote the surface mobility of the reactive radicals, so that heteroepitaxy growth as clustering of Ge and Si, columnar structure are

  3. Growth of Sr2CrReO6 epitaxial thin films by pulsed laser deposition

    International Nuclear Information System (INIS)

    Orna, J.; Morellon, L.; Algarabel, P.A.; Pardo, J.A.; Magen, C.; Varela, M.; Pennycook, S.J.; De Teresa, J.M.; Ibarra, M.R.

    2010-01-01

    We report the growth, structural, magnetic, and electrical transport properties of epitaxial Sr 2 CrReO 6 thin films. We have succeeded in depositing films with a high crystallinity and a relatively large cationic order in a narrow window of growth parameters. The epitaxy relationship is Sr 2 CrReO 6 (SCRO) (0 0 1) [1 0 0]-parallel SrTiO 3 (STO) (0 0 1) [1 1 0] as determined by high-resolution X-ray diffraction and scanning transmission electron microscopy (STEM). Typical values of saturation magnetization of M S (300 K)=1 μ B /f.u. and ρ (300 K)=2.8 mΩ cm have been obtained in good agreement with previous published results in sputtered epitaxial thin films. We estimate that the antisite defects concentration in our thin films is of the order of 14%, and the measured Curie temperature is T C =481(2) K. We believe these materials be of interest as electrodes in spintronic devices.

  4. Growth, structural, optical and electrical study of ZnS thin films deposited by solution growth technique (SGT)

    Energy Technology Data Exchange (ETDEWEB)

    Sadekar, H K [Arts, Commerce and Science college, Sonai 414105 (M.S.) (India); Thin film and Nanotechnology Laboratory, Department of Physics, Dr. B.A.M. University, Aurangabad 431004 (M.S.) (India); Deshpande, N G; Gudage, Y G; Ghosh, A; Chavhan, S D; Gosavi, S R [Thin film and Nanotechnology Laboratory, Department of Physics, Dr. B.A.M. University, Aurangabad 431004 (M.S.) (India); Sharma, Ramphal [Thin film and Nanotechnology Laboratory, Department of Physics, Dr. B.A.M. University, Aurangabad 431004 (M.S.) (India)

    2008-04-03

    ZnS thin films have been deposited onto glass substrates at temperature 90 deg. C by solution growth technique (SGT). The deposition parameters were optimized. Triethanolamine (TEA) was used as a complexing agent for uniform deposition of the thin films. The elemental composition of the film was confirmed by energy dispersive analysis by X-ray (EDAX) technique. Structure and surface morphology of as-deposited films were characterized by X-ray diffraction (XRD) and scanning electron microscopy (SEM), atomic force microscopy (AFM), respectively. XRD patterns reveal that as-deposited thin films were amorphous in nature; while the obtained precipitate powder was polycrystalline in nature. SEM results revealed that deposited ZnS material has {approx}120 {+-} 20 nm average grain size and the spherical grains are distributed over the entire glass substrate. Low surface roughness was found to be 2.7 nm from AFM studies. Transmission spectra indicate a high transmission coefficient ({approx}75%) with direct band gap energy equal to 3.72 eV while indirect band gap was found to be 3.45 eV. A photoluminescence (PL) study of the ZnS at room temperature (300 K) indicates a strong luminescence band at energy 2.02 eV.

  5. Growth and structure of Co/Au magnetic thin films; Croissance et structure des couches minces magnetiques Co/Au

    Energy Technology Data Exchange (ETDEWEB)

    Marsot, N

    1999-01-14

    We have studied the growth and the crystallographic structure of magnetic ultra thin cobalt/gold films (Co/Au), in order to investigate the correlations between their magnetic and structural properties. Room temperature (R.T.) Co growth on Au (111) proceeds in three stages. Up to 2 Co monolayers (ML), a bilayer island growth mode is observed. Between 2 and 5 ML, coalescence of the islands occurs, covering the substrate surface and a Co/Au mixing is observed resulting from the de-construction of the Herringbone reconstruction. Finally, beyond 5 ML, the CoAu mixing is buried and the Co growth continues in a 3-D growth. Annealing studies at 600 K on this system show a smoothing effect of the Co film, and at the same time, segregation of Au atoms. The quality of the Co/Au interface (sharpness) is not enhanced by the annealing. The local order was studied by SEXAFS and the long range order by GIXRD showing that the Co film has a hexagonal close packed structure, with an easy magnetization axis perpendicular to the surface. From a local order point of view, the Co grows with an incoherent epitaxy and keeps its own bulk parameters. The GIXRD analysis shows a residual strain in the Co film of 4%. The difference observed between the local order analysis and the long range order results is explained in terms of the low dimensions of the diffracting domains. The evolution of film strains, as a function of the Co coverage, shows a marked deviation from the elastic strain theory. Modification of the strain field in the Co film as a function of the Au coverage is studied by GIXRD analysis. The Au growth study, at R.T., shows no evidence of a Au/Co mixing in the case of the Au/Co interface. The Au overlayer adopts a twinned face centred cubic structure on the rough Co film surface. (author)

  6. Effect of deposition temperature on electrical, optical and structural properties of Ga-N CO-doped ZnO oxide thin films

    International Nuclear Information System (INIS)

    Shtereva, K.; Tvarozek, V.; Novotny, I.; Kovac, J.; Flickyngerova, S.; Sutta, P.; Netrvalova, M.

    2011-01-01

    ZnO:Ga:N films were deposited on glass substrates by RF diode sputtering at substrate temperatures varying from room temperature to 300 deg C. The experimental results revealed 68 multiple effects of temperature on the film growth and its physical parameters. The deposition rate decreased from 16 to 0.8 nm/min with increasing TS. XRD patterns reveal a strong expressed c-axis preferred orientation of the crystallites. The relationship structure - electrical - optical properties was found. The integrated intensity of the (002) diffraction line increased with the increasing growth temperature and the resistivity of this film (0.5 Ωcm) was reduced more than an order of magnitude. The highest carrier concentration of 1.8x10 19 cm -3 was measured in the film with the highest average transmittance of 86 %. Shift of the optical band edge toward lower wavelengths corresponds to rise in the carrier concentration. (authors)

  7. Attachment and growth of human bone marrow derived mesenchymal stem cells on regenerated antheraea pernyi silk fibroin films

    Energy Technology Data Exchange (ETDEWEB)

    Luan Xiying [Institute of Medical Biotechnology, Jiangsu Province Key Laboratory of Stem Cell, Suzhou University, Suzhou 215007 (China); Wang Yong [Institute of Medical Biotechnology, Jiangsu Province Key Laboratory of Stem Cell, Suzhou University, Suzhou 215007 (China); Duan Xiang [Institute of Medical Biotechnology, Jiangsu Province Key Laboratory of Stem Cell, Suzhou University, Suzhou 215007 (China); Duan Qiaoyan [Institute of Medical Biotechnology, Jiangsu Province Key Laboratory of Stem Cell, Suzhou University, Suzhou 215007 (China); Li Mingzhong [School of Materials Engineering, Suzhou University, Suzhou 215006 (China); Lu Shenzhou [School of Materials Engineering, Suzhou University, Suzhou 215006 (China); Zhang Huanxiang [Institute of Medical Biotechnology, Jiangsu Province Key Laboratory of Stem Cell, Suzhou University, Suzhou 215007 (China); Zhang Xueguang [Institute of Medical Biotechnology, Jiangsu Province Key Laboratory of Stem Cell, Suzhou University, Suzhou 215007 (China)

    2006-12-15

    Silk fibroin of the silkworm Bombyx mori has been studied extensively, while the research on Antheraea pernyi silk fibroin (A. pernyi SF) in biomaterials is only at an early stage. In this study, the attachment, morphology, growth and phenotype of human bone marrow derived mesenchymal stem cells (hBMSCs) cultured on the regenerated A. pernyi SF films were studied in vitro. The results indicated that the attachment of hBMSCs on the regenerated A. pernyi SF films was almost the same as that on the collagen films. MTT and cell counting analyses demonstrated that the growth of hBMSCs on the regenerated A. pernyi SF films was better than that on controls. Moreover, electron scanning microscopy and fluorescence-activated cell sorting assays showed that the regenerated A. pernyi SF supported hBMSCs growth and functional maintenance compared with the controls. These data suggest that the regenerated A. pernyi SF, like Bombyx mori silk fibroin (B. mori SF) and collagen, can support hBMSCs attachment, growth and phenotypic maintenance, and has better biocompatibilities for hBMSCs in vitro culture.

  8. Attachment and growth of human bone marrow derived mesenchymal stem cells on regenerated antheraea pernyi silk fibroin films

    International Nuclear Information System (INIS)

    Luan Xiying; Wang Yong; Duan Xiang; Duan Qiaoyan; Li Mingzhong; Lu Shenzhou; Zhang Huanxiang; Zhang Xueguang

    2006-01-01

    Silk fibroin of the silkworm Bombyx mori has been studied extensively, while the research on Antheraea pernyi silk fibroin (A. pernyi SF) in biomaterials is only at an early stage. In this study, the attachment, morphology, growth and phenotype of human bone marrow derived mesenchymal stem cells (hBMSCs) cultured on the regenerated A. pernyi SF films were studied in vitro. The results indicated that the attachment of hBMSCs on the regenerated A. pernyi SF films was almost the same as that on the collagen films. MTT and cell counting analyses demonstrated that the growth of hBMSCs on the regenerated A. pernyi SF films was better than that on controls. Moreover, electron scanning microscopy and fluorescence-activated cell sorting assays showed that the regenerated A. pernyi SF supported hBMSCs growth and functional maintenance compared with the controls. These data suggest that the regenerated A. pernyi SF, like Bombyx mori silk fibroin (B. mori SF) and collagen, can support hBMSCs attachment, growth and phenotypic maintenance, and has better biocompatibilities for hBMSCs in vitro culture

  9. Growth Performance and Carcass Characteristics of Korean Native Ducks Fed Diets with Varying Levels of Limiting Amino Acids

    Directory of Open Access Journals (Sweden)

    Y. K. Choo

    2014-04-01

    Full Text Available There are multiple experiments conducted with male Korean native ducks (KND to evaluate the optimal levels of limiting amino acids (AA. In Exp. 1, a total of 450 one-d-old male KNDs were divided into five groups with six replicates and fed experimental diets with varying levels of lysine, total sulfur amino acids (TSAA and threonine (T1, 0.90/0.74/0.70%; T2, 1.00/0.82/0.77%; T3, 1.10/0.90/0.85%; T4, 1.20/0.98/0.93%; T5, 1.30/1.07/1.01% to 21 d of age. In Exp. 2, one-d-old male KND were received and fed commercial starter diet from hatching to 21 d of age, and then divided into five groups with six replicates and fed one of five diets varying levels of lysine, TSAA, and threonine (T1, 0.73/0.62/0.54%; T2, 0.80/0.68/0.60%; T3, 0.87/0.74/0.65%; T4, 0.94/0.80/0.70%; T5, 1.01/0.86/0.75% during 22 to 56 d of age, respectively. The BW gain was linearly increased as dietary limiting AA levels increased to 1.20% lysine, 0.98% TSAA and 0.93% threonine. There were no significant differences in feed intake, gain:feed and uniformity among groups. In Exp. 2, the BW gain and gain:feed were not affected by dietary limiting AA levels. There were no significant differences in carcass characteristics and meat quality among groups. The growth performance and carcass characteristics did not show the significant response to increasing dietary limiting AA levels in KND during 22 to 56 d of age. In conclusion, the levels of lysine, TSAA and threonine necessary to maximize growth for starter phase were at least 1.20%, 0.98%, and 0.93%, respectively. On the other hands, KND require relatively low levels of limiting AA for late growth and carcass yield. The dietary levels of 0.73% lysine, 0.62% TSAA and 0.54% threonine appear to be adequate during growing phase.

  10. Novel approach to growth of precipitate-free, high-quality oxide thin films suitable for device applications

    International Nuclear Information System (INIS)

    Endo, K.; Badica, P.; Sato, H.; Akoh, H.

    2006-01-01

    To eliminate precipitates-segregates that can easily occur on the thin film surfaces of the multicomponent materials for electronics, a new approach is proposed, consisting of the following aspects: first, on the substrates, artificial steps of predefined height and width are produced, and second, films are grown on such substrates. The width of the step is taken equal to the 'double of the migration length' of the atomic species depositing on the substrate. In these conditions, precipitates migrate and gather at the step edges where the free energy is lowest and the resulting totally precipitate-free surface of the film on the step is suitable for device applications or integration purposes. The method has several other important advantages and they are discussed in the text. Using this new approach we present successful fabrication of a mesa structure showing intrinsic Josephson effect. We have used thin films of Bi-2212/Bi-2223 superstructure grown by MOCVD on (001) SrTiO 3 single crystal substrates with artificial steps of about 20 μm width

  11. Growth and structure of L1 sub 0 ordered FePt films on GaAs(001)

    CERN Document Server

    Nefedov, A; Theis-Broehl, K; Zabel, H; Doi, M; Schuster, E; Keune, W

    2002-01-01

    The structural properties of epitaxial L1 sub 0 ordered FePt(001) films, grown by molecular beam epitaxy (alternating deposition of Fe and Pt atomic layers) on buffer-Pt/seed-Fe/GaAs(001) have been studied by in situ reflection high-energy electron diffraction and by ex situ x-ray scattering as a function of the growth conditions. Reflection high-energy electron diffraction intensity oscillations measured during FePt layer growth provide evidence for island growth at T sub s = 200 deg. C and quasi layer-by-layer growth at T sub s = 350 deg. C. From small-angle and wide-angle x-ray scattering it was found that the degree of epitaxy depends critically on morphology of the seed layer and the substrate roughness. X-ray diffraction analysis showed that the long-range order parameter increases from near zero for films grown at 200 deg. C to 0.65 for films grown at 350 deg. C. This confirms the fact that the order parameter is mainly determined by the surface mobility of the atoms which is controlled experimentally ...

  12. Low-temperature growth of high quality AlN films on carbon face 6H-SiC

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Myunghee [Department of General Systems Studies, The University of Tokyo, 3-8-1 Komaba, Meguro-ku, Tokyo 153-8902 (Japan); Ohta, Jitsuo; Fujioka, Hiroshi [Institute of Industrial Science (IIS), The University of Tokyo, 4-6-1 Komaba, Tokyo 153-8505 (Japan); Kanagawa Academy of Science and Technology (KAST), 3-2-1 Sakado, Kawasaki 213-0012 (Japan); Kobayashi, Atsushi [Institute of Industrial Science (IIS), The University of Tokyo, 4-6-1 Komaba, Tokyo 153-8505 (Japan); Oshima, Masaharu [Department of General Systems Studies, The University of Tokyo, 3-8-1 Komaba, Meguro-ku, Tokyo 153-8902 (Japan); Department of Applied Chemistry, The University of Tokyo, 4-3-1 Hongo, Tokyo 113-8656 (Japan); Core Research for Evolutional Science and Technology (CREST), Japan Science and Technology Agency (JST), Chiyoda-ku, Tokyo 102-0075 (Japan)

    2008-01-15

    AlN films have been grown on atomically flat carbon face 6H-SiC (000 anti 1) substrates by pulsed laser deposition and their structural properties have been investigated. In-situ reflection high-energy electron diffraction observations have revealed that growth of AlN at 710 C proceeds in a Stranski-Krastanov mode, while typical layer-by-layer growth occurs at room temperature (RT) with atomically flat surfaces. It has been revealed that the crystalline quality of the AlN film is dramatically improved by the reduction in growth temperature down to RT and the full width at half maximum values in the X-ray rocking curves for 0004 and 10 anti 12 diffractions of the RT-grown AlN film are 0.05 and 0.07 , respectively. X-ray reciprocal space mapping has revealed that the introduction of misfit dislocations is suppressed in the case of RT growth, which is probably responsible for the improvement in crystalline quality. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  13. Epitaxial growth of fcc-CoxNi100-x thin films on MgO(110) single-crystal substrates

    International Nuclear Information System (INIS)

    Ohtake, Mitsuru; Nukaga, Yuri; Sato, Yoichi; Futamoto, Masaaki; Kirino, Fumiyoshi

    2009-01-01

    Co x Ni 100-x (x=100, 80, 20, 0 at. %) epitaxial thin films were prepared on MgO(110) single-crystal substrates heated at 300 deg. C by ultrahigh vacuum molecular beam epitaxy. The growth mechanism is discussed based on lattice strain and crystallographic defects. CoNi(110) single-crystal films with a fcc structure are obtained for all compositions. Co x Ni 100-x film growth follows the Volmer-Weber mode. X-ray diffraction analysis indicates that the out-of-plane and the in-plane lattice spacings of the Co x Ni 100-x films are in agreement within ±0.5% with the values of the respective bulk Co x Ni 100-x crystals, suggesting that the strain in the film is very small. High-resolution cross-sectional transmission microscopy shows that an atomically sharp boundary is formed between a Co(110) fcc film and a MgO(110) substrate, where periodical misfit dislocations are preferentially introduced in the film at the Co/MgO interface. The presence of such periodical misfit dislocations relieves the strain caused by the lattice mismatch between the film and the substrate.

  14. Oxidation phase growth diagram of vanadium oxides film fabricated by rapid thermal annealing

    Institute of Scientific and Technical Information of China (English)

    Tamura KOZO; Zheng-cao LI; Yu-quan WANG; Jie NI; Yin HU; Zheng-jun ZHANG

    2009-01-01

    Thermal evaporation deposited vanadium oxide films were annealed in air by rapid thermal annealing (RTP). By adjusting the annealing temperature and time, a series of vanadium oxide films with various oxidation phases and surface morphologies were fabricated, and an oxidation phase growth diagram was established. It was observed that different oxidation phases appear at a limited and continuous annealing condition range, and the morphologic changes are related to the oxidation process.

  15. X-ray magnetic spectroscopy of MBE-grown Mn-doped Bi2Se3 thin films

    Directory of Open Access Journals (Sweden)

    L. J. Collins-McIntyre

    2014-12-01

    Full Text Available We report the growth of Mn-doped Bi2Se3 thin films by molecular beam epitaxy (MBE, investigated by x-ray diffraction (XRD, atomic force microscopy (AFM, SQUID magnetometry and x-ray magnetic circular dichroism (XMCD. Epitaxial films were deposited on c-plane sapphire substrates by co-evaporation. The films exhibit a spiral growth mechanism typical of this material class, as revealed by AFM. The XRD measurements demonstrate a good crystalline structure which is retained upon doping up to ∼7.5 atomic-% Mn, determined by Rutherford backscattering spectrometry (RBS, and show no evidence of the formation of parasitic phases. However an increasing interstitial incorporation of Mn is observed with increasing doping concentration. A magnetic moment of 5.1 μB/Mn is obtained from bulk-sensitive SQUID measurements, and a much lower moment of 1.6 μB/Mn from surface-sensitive XMCD. At ∼2.5 K, XMCD at the Mn L2,3 edge, reveals short-range magnetic order in the films and indicates ferromagnetic order below 1.5 K.

  16. Recovery Act : Near-Single-Crystalline Photovoltaic Thin Films on Polycrystalline, Flexible Substrates

    Energy Technology Data Exchange (ETDEWEB)

    Venkat Selvamanickam; Alex Freundlich

    2010-11-29

    III-V photovoltaics have exhibited efficiencies above 40%, but have found only a limited use because of the high cost of single crystal substrates. At the other end of the spectrum, polycrystalline and amorphous thin film solar cells offer the advantage of low-cost fabrication, but have not yielded high efficiencies. Our program is based on single-crystalline-like thin film photovoltaics on polycrystalline substrates using biaxially-textured templates made by Ion Beam-Assisted Deposition (IBAD). MgO templates made by IBAD on flexible metal substrate have been successfully used for epitaxial growth of germanium films. In spite of a 4.5% lattice mismatch, heteroepitaxial growth of Ge was achieved on CeO2 that was grown on IBAD MgO template. Room temperature optical bandgap of the Ge films was identified at 0.67 eV indicating minimal residual strain. Refraction index and extinction coefficient values of the Ge films were found to match well with that measured from a reference Ge single crystal. GaAs has been successfully grown epitaxially on Ge on metal substrate by molecular beam epitaxy. RHEED patterns indicate self annihilation of antiphase boundaries and the growth of a single domain GaAs. The GaAs is found to exhibit strong photoluminescence signal and, an existence of a relatively narrow (FWHM~20 meV) band-edge excitons measured in this film indicates a good optoelectronic quality of deposited GaAs. While excellent epitaxial growth has been achieved in GaAs on flexible metal substrates, the defect density of the films as measured by High Resolution X-ray Diffraction and etch pit experiments showed a high value of 5 * 10^8 per cm^2. Cross sectional transmission electron microscopy of the multilayer architecture showed concentration of threading dislocations near the germanium-ceria interface. The defect density was found decrease as the Ge films were made thicker. The defects appear to originate from the MgO layer presumably because of large lattice mismatches

  17. Ion Beam Assisted Deposition of Thin Epitaxial GaN Films.

    Science.gov (United States)

    Rauschenbach, Bernd; Lotnyk, Andriy; Neumann, Lena; Poppitz, David; Gerlach, Jürgen W

    2017-06-23

    The assistance of thin film deposition with low-energy ion bombardment influences their final properties significantly. Especially, the application of so-called hyperthermal ions (energy GaN thin films on (0001)-oriented 6H-SiC substrates at 700 °C. The films are studied in situ by reflection high energy electron diffraction, ex situ by X-ray diffraction, scanning tunnelling microscopy, and high-resolution transmission electron microscopy. It is demonstrated that the film growth mode can be controlled by varying the ion to atom ratio, where 2D films are characterized by a smooth topography, a high crystalline quality, low biaxial stress, and low defect density. Typical structural defects in the GaN thin films were identified as basal plane stacking faults, low-angle grain boundaries forming between w-GaN and z-GaN and twin boundaries. The misfit strain between the GaN thin films and substrates is relieved by the generation of edge dislocations in the first and second monolayers of GaN thin films and of misfit interfacial dislocations. It can be demonstrated that the low-energy nitrogen ion assisted molecular beam epitaxy is a technique to produce thin GaN films of high crystalline quality.

  18. Effects of Sb-doping on the grain growth of Cu(In, Ga)Se2 thin films fabricated by means of single-target sputtering

    International Nuclear Information System (INIS)

    Zhang, Shu; Wu, Lu; Yue, Ruoyu; Yan, Zongkai; Zhan, Haoran; Xiang, Yong

    2013-01-01

    To investigate the effects of Sb doping on the kinetics of grain growth in Cu(In,Ga)Se 2 (CIGS) thin films during annealing, CIGS thin films were sputtered onto Mo coated substrates from a single CIGS alloy target, followed by chemical bath deposition of Sb 2 S 3 thin layers on top of CIGS layers and subsequent annealing at different temperatures for 30 min in Se vapors. X-ray diffraction results showed that CIGS thin films were obtained directly using the single-target sputtering method. After annealing, the In/Ga ratio in Sb-doped CIGS thin films remained stable compared to undoped film, possibly because Sb can promote the incorporation of Ga into CIGS. The grain growth in CIGS thin films was enhanced after Sb doping, exhibiting significantly larger grains after annealing at 400 °C or 450 °C compared to films without Sb. In particular, the effect was strikingly significant in grain growth across the film thickness, resulting in columnar grain structure in Sb-doped films. This grain growth improvement may be led by the diffusion of Sb from the front surface to the CIGS-Mo back interface, which promoted the mass transport process in CIGS thin films. - Highlights: ► Cu(In,Ga)Se 2 (CIGS) thin films made by sputtering from a single CIGS target. ► Chemical bath deposition used to introduce antimony into CIGS absorber layers. ► In/Ga ratio decreases in Sb-doped annealed films, comparatively to undoped films. ► Sb-doped CIGS films are superior to undoped films in terms of grain-growth kinetics

  19. Productive performance and digestibility in the initial growth phase of tambaqui (Colossoma macropomum fed diets with different carbohydrate and lipid levels

    Directory of Open Access Journals (Sweden)

    L.C.G. Sandre

    2017-05-01

    Full Text Available The use of dietary protein can be optimized by increasing diet energy, which can be achieved by adding non-protein nutrients such as carbohydrates and lipids. If incorporated in suitable amounts, these items can promote the protein sparing effect, reducing nitrogen excretion and improving the quality of fish farming effluents. The study assessed productive performance, body composition, nutrient and energy retention efficiency and digestibility of the omnivorous fish tambaqui (Colossoma macropomum fed diets with three carbohydrate (410, 460 and 510 g kg−1 and two lipid levels (40 and 80 g kg−1 in the initial growth phase (juvenile weighing between 10 and 250 g. The experiment was completely randomized, with six treatments and four replicas arranged in a 3 × 2 factorial design. The 1080 tambaqui tested (10.88 ± 0.13 g body weight were randomly distributed into 24 tanks (500 L; 45 fish/tank and fed the test diets for 120 days. The highest carbohydrate inclusion (510 g kg−1 reduced food intake and fish growth. A protein sparing effect was observed in the growth of tambaqui fed 460 g kg−1 carbohydrates since they showed higher weight gain, protein efficiency ratio, protein productive value and crude protein participation in weight gain. The increase in lipid levels from 40 g kg−1 to 80 g kg−1 increased body fat deposition and decreased the digestibility coefficients of diet nutrients and diet energy. The results demonstrate that the ideal balanced diet to grow juvenile tambaqui is 460 g kg−1 carbohydrates and 40 g kg−1 lipids.

  20. Construction of Zn-incorporated multilayer films to promote osteoblasts growth and reduce bacterial adhesion

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Peng, E-mail: liupeng79@cqu.edu.cn [Key Laboratory of Biorheological Science and Technology of Ministry of Education, College of Bioengineering, Chongqing University, Chongqing 400044 (China); State Key Laboratory of Molecular Engineering of Polymers, Department of Macromolecular Science, Fudan University, Shanghai 200433 (China); Zhao, Yongchun; Yuan, Zhang [Key Laboratory of Biorheological Science and Technology of Ministry of Education, College of Bioengineering, Chongqing University, Chongqing 400044 (China); Ding, Hongyan [Jiangsu Provincial Key Laboratory for Interventional Medical Devices, Huaiyin Institute of Technology, Huaian, Jiangsu Province 223003 (China); Hu, Yan; Yang, Weihu [Key Laboratory of Biorheological Science and Technology of Ministry of Education, College of Bioengineering, Chongqing University, Chongqing 400044 (China); Cai, Kaiyong, E-mail: kaiyong_cai@cqu.edu.cn [Key Laboratory of Biorheological Science and Technology of Ministry of Education, College of Bioengineering, Chongqing University, Chongqing 400044 (China)

    2017-06-01

    To improve the biological performance of titanium substrates, a bioactive multilayered structure of chitosan/gelatin pair, containing zinc ions, was constructed via a layer-by-layer self-assembly technique. The successful preparation of zinc ions incorporated multilayer films was demonstrated by scanning electron microscopy, X-ray photoelectron spectroscopy, and contact angle measurements, respectively. The biological behaviors of osteoblasts adhered to modified Ti substrates were investigated in vitro via cytoskeleton observation, cell viability measurement, and alkaline phosphatase activity assay. The cytocompatibility evaluation verified that the present system was capable of promoting the growth of osteoblasts. In addition, Gram-positive (Staphylococcus aureus) and Gram-negative (Escherichia coli) bacteria were used to evaluate antibacterial property of modified Ti substrates. Bacterial adhesion and viability assay confirmed that Zn-loaded multilayer films were able to inhibit the adhesion and growth of bacteria. The approach presented here affords an alternative to reduce bacterial infection and promote osteoblast growth for titanium-based implants. - Highlights: • Polyelectrolyte multilayer films containing Zn ions were fabricated on Ti substrate. • Modified Ti substrate stimulated the biological responses of osteoblast. • Antibacterial property of Ti substrate was significantly improved. • The resulting material thus has potential application in orthopedic field.