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Sample records for edge silicon sensors

  1. X-ray imaging characterization of active edge silicon pixel sensors

    International Nuclear Information System (INIS)

    Ponchut, C; Ruat, M; Kalliopuska, J

    2014-01-01

    The aim of this work was the experimental characterization of edge effects in active-edge silicon pixel sensors, in the frame of X-ray pixel detectors developments for synchrotron experiments. We produced a set of active edge pixel sensors with 300 to 500 μm thickness, edge widths ranging from 100 μm to 150 μm, and n or p pixel contact types. The sensors with 256 × 256 pixels and 55 × 55 μm 2 pixel pitch were then bump-bonded to Timepix readout chips for X-ray imaging measurements. The reduced edge widths makes the edge pixels more sensitive to the electrical field distribution at the sensor boundaries. We characterized this effect by mapping the spatial response of the sensor edges with a finely focused X-ray synchrotron beam. One of the samples showed a distortion-free response on all four edges, whereas others showed variable degrees of distortions extending at maximum to 300 micron from the sensor edge. An application of active edge pixel sensors to coherent diffraction imaging with synchrotron beams is described

  2. Edge-TCT for the investigation of radiation damaged silicon strip sensors

    Energy Technology Data Exchange (ETDEWEB)

    Feindt, Finn

    2017-02-15

    The edge Transient Current Technique (TCT) is a method for the investigation of silicon sensors. This method requires infrared light from a sub-ns pulsed laser to be focused to a μm-size spot and scanned across the polished cut edge of a sensor. Electron-hole pairs are generated along the light beam in the sensor. These charge carriers drift in the electric field and induce transient currents on the sensor electrodes. The current transients are analyzed as a function of the applied voltage, temperature, absorbed dose and position of the laser-light focus, in order to determine the the drift velocities, electric field and the charge collection in the strip sensor. In the scope of this work, a new edge-TCT setup is commissioned, a procedure for the polishing of the cut edge is implemented and a method to position the focus of the laser light with respect to the sensor is developed. First edge-TCT measurements are performed on non-irradiated, 285 μm thick n-type strip sensors, and the pulse shape and charge collection is studied under different conditions. Furthermore, the prompt current of the transients is extracted, which is the first step towards the determination of the electric field. A new method to measure the attenuation of light in silicon is tested on a non-irradiated sensor and on sensors irradiated with up to a 1 MeV neutron equivalent fluence of 1.14 x 10{sup 15} cm{sup -2}, using laser light with a wavelength of 1052 nm.

  3. Edge-TCT for the investigation of radiation damaged silicon strip sensors

    International Nuclear Information System (INIS)

    Feindt, Finn

    2017-02-01

    The edge Transient Current Technique (TCT) is a method for the investigation of silicon sensors. This method requires infrared light from a sub-ns pulsed laser to be focused to a μm-size spot and scanned across the polished cut edge of a sensor. Electron-hole pairs are generated along the light beam in the sensor. These charge carriers drift in the electric field and induce transient currents on the sensor electrodes. The current transients are analyzed as a function of the applied voltage, temperature, absorbed dose and position of the laser-light focus, in order to determine the the drift velocities, electric field and the charge collection in the strip sensor. In the scope of this work, a new edge-TCT setup is commissioned, a procedure for the polishing of the cut edge is implemented and a method to position the focus of the laser light with respect to the sensor is developed. First edge-TCT measurements are performed on non-irradiated, 285 μm thick n-type strip sensors, and the pulse shape and charge collection is studied under different conditions. Furthermore, the prompt current of the transients is extracted, which is the first step towards the determination of the electric field. A new method to measure the attenuation of light in silicon is tested on a non-irradiated sensor and on sensors irradiated with up to a 1 MeV neutron equivalent fluence of 1.14 x 10"1"5 cm"-"2, using laser light with a wavelength of 1052 nm.

  4. First experimental results on active and slim-edge silicon sensors for XFEL

    International Nuclear Information System (INIS)

    Pancheri, L.; Benkechcache, M. E. A.; Betta, G.-F. Dalla; Xu, H.; Verzellesi, G.; Ronchin, S.; Boscardin, M.; Ratti, L.; Grassi, M.; Lodola, L.; Malcovati, P.; Vacchi, C.; Manghisoni, M.; Re, V.; Traversi, G.; Batignani, G.; Bettarini, S.; Casarosa, G.; Giorgi, M.; Forti, F.

    2016-01-01

    This work presents the first characterization results obtained on a pilot fabrication run of planar sensors, tailored for X-ray imaging applications at FELs, developed in the framework of INFN project PixFEL. Active and slim-edge p-on-n sensors are fabricated on n-type high-resistivity silicon with 450 μm thickness, bonded to a support wafer. Both diodes and pixelated sensors with a pitch of 110 μm are included in the design. Edge structures with different number of guard rings are designed to comply with the large bias voltage required by the application after accumulating an ionizing radiation dose as large as 1GGy. Preliminary results from the electrical characterization of the produced sensors, providing a first assessment of the proposed approach, are discussed. A functional characterization of the sensors with a pulsed infrared laser is also presented, demonstrating the validity of slim-edge configurations.

  5. An edge-TCT setup for the investigation of radiation damaged silicon sensors

    Energy Technology Data Exchange (ETDEWEB)

    Feindt, Finn; Scharf, Christian; Garutti, Erika; Klanner, Robert [Institute for Experimental Physics, Hamburg University, Luruper Chaussee 149, D-22761 Hamburg (Germany)

    2016-07-01

    The aim of this work is to measure the electric field, drift velocity and charge collection of electrons and holes in radiation-damaged silicon strip sensors. For this purpose the edge Transient Current Technique (TCT) is employed. In contrast to conventional TCT, this method requires light from a sub-ns pulsed, infrared laser to be focused to a μm-size spot and scanned across the polished edge of a strip sensor. Thus electron-hole pairs are generated at a known depth in the sensor. Electrons and holes drift in the electric field and induce transient currents on the sensor electrodes. The current wave forms are analyzed as a function of the applied voltage and the position of the laser focus in order to determine the electric field, the drift velocities and the charge collection. In this talk the setup and the procedure for polishing the sensor edge are described, and first results, regarding the measurement of the laser light focus are presented.

  6. Edge pixel response studies of edgeless silicon sensor technology for pixellated imaging detectors

    Science.gov (United States)

    Maneuski, D.; Bates, R.; Blue, A.; Buttar, C.; Doonan, K.; Eklund, L.; Gimenez, E. N.; Hynds, D.; Kachkanov, S.; Kalliopuska, J.; McMullen, T.; O'Shea, V.; Tartoni, N.; Plackett, R.; Vahanen, S.; Wraight, K.

    2015-03-01

    Silicon sensor technologies with reduced dead area at the sensor's perimeter are under development at a number of institutes. Several fabrication methods for sensors which are sensitive close to the physical edge of the device are under investigation utilising techniques such as active-edges, passivated edges and current-terminating rings. Such technologies offer the goal of a seamlessly tiled detection surface with minimum dead space between the individual modules. In order to quantify the performance of different geometries and different bulk and implant types, characterisation of several sensors fabricated using active-edge technology were performed at the B16 beam line of the Diamond Light Source. The sensors were fabricated by VTT and bump-bonded to Timepix ROICs. They were 100 and 200 μ m thick sensors, with the last pixel-to-edge distance of either 50 or 100 μ m. The sensors were fabricated as either n-on-n or n-on-p type devices. Using 15 keV monochromatic X-rays with a beam spot of 2.5 μ m, the performance at the outer edge and corners pixels of the sensors was evaluated at three bias voltages. The results indicate a significant change in the charge collection properties between the edge and 5th (up to 275 μ m) from edge pixel for the 200 μ m thick n-on-n sensor. The edge pixel performance of the 100 μ m thick n-on-p sensors is affected only for the last two pixels (up to 110 μ m) subject to biasing conditions. Imaging characteristics of all sensor types investigated are stable over time and the non-uniformities can be minimised by flat-field corrections. The results from the synchrotron tests combined with lab measurements are presented along with an explanation of the observed effects.

  7. Slim edges in double-sided silicon 3D detectors

    International Nuclear Information System (INIS)

    Povoli, M; Dalla Betta, G-F; Bagolini, A; Boscardin, M; Giacomini, G; Vianello, E; Zorzi, N

    2012-01-01

    Minimization of the insensitive edge area is one of the key requirements for silicon radiation detectors to be used in future silicon trackers. In 3D detectors this goal can be achieved with the active edge, at the expense of a high fabrication process complexity. In the framework of the ATLAS 3D sensor collaboration, we produced modified 3D silicon sensors with a double-sided technology. While this approach is not suitable to obtain active edges, because it does not use a support wafer, it allows for a new type of edge termination, the slim edge. In this paper we report on the development of the slim edge, from numerical simulations to design and testing, proving that it works effectively without increasing the fabrication complexity of silicon 3D detectors, and that it could be further optimized to reduce the insensitive edge region to less than 100 μm.

  8. Probing active-edge silicon sensors using a high precision telescope

    Energy Technology Data Exchange (ETDEWEB)

    Akiba, K. [Federal University of Rio de Janeiro, Rio de Janeiro (Brazil); Artuso, M. [Syracuse University, Syracuse, NY (United States); Beveren, V. van; Beuzekom, M. van; Boterenbrood, H. [Nikhef, Amsterdam (Netherlands); Buytaert, J.; Collins, P.; Dumps, R. [CERN, the European Organisation for Nuclear Research, Geneva (Switzerland); Heijden, B. van der [Nikhef, Amsterdam (Netherlands); Hombach, C. [University of Manchester, Manchester, Lancashire (United Kingdom); Hynds, D. [Glasgow University, Glasgow, Lanarkshire (United Kingdom); Hsu, D. [Syracuse University, Syracuse, NY (United States); John, M. [University of Oxford, Oxfordshire (United Kingdom); Koffeman, E. [Nikhef, Amsterdam (Netherlands); Leflat, A. [Lomonosov Moscow State University, Moscow (Russian Federation); Li, Y. [Tsinghua University, Beijing (China); Longstaff, I.; Morton, A. [Glasgow University, Glasgow, Lanarkshire (United Kingdom); Pérez Trigo, E. [Universidade de Santiago de Compostela, Santiago de Compostela (Spain); Plackett, R. [Diamond Light Source Ltd., Didcot, Oxfordshire (United Kingdom); and others

    2015-03-21

    The performance of prototype active-edge VTT sensors bump-bonded to the Timepix ASIC is presented. Non-irradiated sensors of thicknesses 100–200 μm and pixel-to-edge distances of 50 μm and 100 μm were probed with a beam of charged hadrons with sub-pixel precision using the Timepix telescope assembled at the SPS at CERN. The sensors are shown to be highly efficient up to a few micrometers from the physical edge of the sensor. The distortion of the electric field lines at the edge of the sensors is studied by reconstructing the streamlines of the electric field using two-pixel clusters. These results are supported by TCAD simulations. The reconstructed streamlines are used to study the field distortion as a function of the bias voltage and to apply corrections to the cluster positions at the edge.

  9. Probing active-edge silicon sensors using a high precision telescope

    NARCIS (Netherlands)

    Akiba, K.; Artuso, M.; van Beveren, V.; van Beuzekom, M.; Boterenbrood, H.; Buytaert, J.; Collins, P.; Dumps, R.; van der Heijden, B.; Hombach, C.; Hynds, D.; Hsu, D.; John, M.; Koffeman, E.; Leflat, A.; Li, Y.; Longstaff, I.; Morton, A.; PérezTrigo, E.; Plackett, R.; Reid, M.M.; Rodríguez Perez, P.; Schindler, H.; Tsopelas, P.; Vázquez Sierra, C.; Wysokiński, M.

    2015-01-01

    The performance of prototype active-edge VTT sensors bump-bonded to the Timepix ASIC is presented. Non-irradiated sensors of thicknesses 100-200 μm and pixel-to-edge distances of 50 μm and 100 μm were probed with a beam of charged hadrons with sub-pixel precision using the Timepix telescope

  10. Fabrication of 3D Silicon Sensors

    Energy Technology Data Exchange (ETDEWEB)

    Kok, A.; Hansen, T.E.; Hansen, T.A.; Lietaer, N.; Summanwar, A.; /SINTEF, Oslo; Kenney, C.; Hasi, J.; /SLAC; Da Via, C.; /Manchester U.; Parker, S.I.; /Hawaii U.

    2012-06-06

    Silicon sensors with a three-dimensional (3-D) architecture, in which the n and p electrodes penetrate through the entire substrate, have many advantages over planar silicon sensors including radiation hardness, fast time response, active edge and dual readout capabilities. The fabrication of 3D sensors is however rather complex. In recent years, there have been worldwide activities on 3D fabrication. SINTEF in collaboration with Stanford Nanofabrication Facility have successfully fabricated the original (single sided double column type) 3D detectors in two prototype runs and the third run is now on-going. This paper reports the status of this fabrication work and the resulted yield. The work of other groups such as the development of double sided 3D detectors is also briefly reported.

  11. Silicon sensor technologies for ATLAS IBL upgrade

    CERN Document Server

    Grenier, P; The ATLAS collaboration

    2011-01-01

    New pixel sensors are currently under development for ATLAS Upgrades. The first upgrade stage will consist in the construction of a new pixel layer that will be installed in the detector during the 2013 LHC shutdown. The new layer (Insertable-B-Layer, IBL) will be inserted between the inner most layer of the current pixel detector and the beam pipe at a radius of 3.2cm. The expected high radiation levels require the use of radiation hard technology for both the front-end chip and the sensor. Two different pixel sensor technologies are envisaged for the IBL. The sensor choice will occur in July 2011. One option is developed by the ATLAS Planar Pixel Sensor (PPS) Collaboration and is based on classical n-in-n planar silicon sensors which have been used for the ATLAS Pixel detector. For the IBL, two changes were required: The thickness was reduced from 250 um to 200 um to improve the radiation hardness. In addition, so-called "slim edges" were designed to reduce the inactive edge of the sensors from 1100 um to o...

  12. X-ray metrology of an array of active edge pixel sensors for use at synchrotron light sources

    Science.gov (United States)

    Plackett, R.; Arndt, K.; Bortoletto, D.; Horswell, I.; Lockwood, G.; Shipsey, I.; Tartoni, N.; Williams, S.

    2018-01-01

    We report on the production and testing of an array of active edge silicon sensors as a prototype of a large array. Four Medipix3RX.1 chips were bump bonded to four single chip sized Advacam active edge n-on-n sensors. These detectors were then mounted into a 2 by 2 array and tested on B16 at Diamond Light Source with an x-ray beam spot of 2um. The results from these tests, compared with optical metrology demonstrate that this type of sensor is sensitive to the physical edge of the silicon, with only a modest loss of efficiency in the final two rows of pixels. We present the efficiency maps recorded with the microfocus beam and a sample powder diffraction measurement. These results give confidence that this sensor technology can be used effectively in larger arrays of detectors at synchrotron light sources.

  13. An investigation of excess noise in transition-edge sensors on a solid silicon substrate

    International Nuclear Information System (INIS)

    Crowder, S.G.; Lindeman, M.A.; Anderson, M.B.; Bandler, S.R.; Bilgri, N.; Bruijn, M.P.; Chervenak, J.; Figueroa-Feliciano, E.; Finkbeiner, F.; Germeau, A.; Hoevers, H.F.C.; Iyomoto, N.; Kelly, R.; Kilbourne, C.A.; Lai, T.; Man, J.; McCammon, D.; Nelms, K.L.; Porter, F.S.; Rocks, L.; Saab, T.; Sadleir, J.; Vidugiris, G.

    2006-01-01

    Transition-edge sensors (TESs) exhibit two major types of excess noise above the expected and unavoidable thermodynamic fluctuation noise (TFN) to the heat sink and Johnson noise. High-resistance TESs such as those made by the Netherlands Institute for Space Research (SRON) show excess noise consistent with internal TFN (ITFN) caused by random energy transport within the TES itself while low resistance TESs show an excess voltage noise of unknown origin seemingly unrelated to temperature fluctuations. Running a high-resistance TES on a high thermal conductivity substrate should suppress ITFN and allow detection of any excess voltage noise. We tested two TESs on a solid silicon substrate fabricated by SRON of a relatively high normal state resistance of ∼200 mΩ. After determining a linear model of the TES response to noise for the devices, we found little excess TFN and little excess voltage noise for bias currents of up to ∼20 μA

  14. Silicon oxide nanoimprint stamp fabrication by edge lithography reinforced with silicon nitride

    NARCIS (Netherlands)

    Zhao, Yiping; Berenschot, Johan W.; de Boer, Meint J.; Jansen, Henricus V.; Tas, Niels Roelof; Huskens, Jurriaan; Elwenspoek, Michael Curt

    2007-01-01

    The fabrication of silicon oxide nanoimprint stamp employing edge lithography in combination with silicon nitride deposition is presented. The fabrication process is based on conventional photolithography an weg etching methods. Nanoridges with width dimension of sub-20 nm were fabricated by edge

  15. Silicon sensors for trackers at high-luminosity environment

    Energy Technology Data Exchange (ETDEWEB)

    Peltola, Timo, E-mail: timo.peltola@helsinki.fi

    2015-10-01

    The planned upgrade of the LHC accelerator at CERN, namely the high luminosity (HL) phase of the LHC (HL-LHC foreseen for 2023), will result in a more intense radiation environment than the present tracking system that was designed for. The required upgrade of the all-silicon central trackers at the ALICE, ATLAS, CMS and LHCb experiments will include higher granularity and radiation hard sensors. The radiation hardness of the new sensors must be roughly an order of magnitude higher than in the current LHC detectors. To address this, a massive R&D program is underway within the CERN RD50 Collaboration “Development of Radiation Hard Semiconductor Devices for Very High Luminosity Colliders” to develop silicon sensors with sufficient radiation tolerance. Research topics include the improvement of the intrinsic radiation tolerance of the sensor material and novel detector designs with benefits like reduced trapping probability (thinned and 3D sensors), maximized sensitive area (active edge sensors) and enhanced charge carrier generation (sensors with intrinsic gain). A review of the recent results from both measurements and TCAD simulations of several detector technologies and silicon materials at radiation levels expected for HL-LHC will be presented. - Highlights: • An overview of the recent results from the RD50 collaboration. • Accuracy of TCAD simulations increased by including both bulk and surface damage. • Sensors with n-electrode readout and MCz material offer higher radiation hardness. • 3D detectors are a promising choice for the extremely high fluence environments. • Detectors with an enhanced charge carrier generation under systematic investigation.

  16. Edgeless silicon sensors for Medipix-based large-area X-ray imaging detectors

    International Nuclear Information System (INIS)

    Bosma, M J; Visser, J; Koffeman, E N; Evrard, O; De Moor, P; De Munck, K; Tezcan, D Sabuncuoglu

    2011-01-01

    Some X-ray imaging applications demand sensitive areas exceeding the active area of a single sensor. This requires a seamless tessellation of multiple detector modules with edgeless sensors. Our research is aimed at minimising the insensitive periphery that isolates the active area from the edge. Reduction of the edge-defect induced charge injection, caused by the deleterious effects of dicing, is an important step. We report on the electrical characterisation of 300 μm thick edgeless silicon p + -ν-n + diodes, diced using deep reactive ion etching. Sensors with both n-type and p-type stop rings were fabricated in various edge topologies. Leakage currents in the active area are compared with those of sensors with a conventional design. As expected, we observe an inverse correlation between leakage-current density and both the edge distance and stop-ring width. From this correlation we determine a minimum acceptable edge distance of 50 μm. We also conclude that structures with a p-type stop ring show lower leakage currents and higher breakdown voltages than the ones with an n-type stop ring.

  17. Thin n-in-p planar pixel sensors and active edge sensors for the ATLAS upgrade at HL-LHC

    International Nuclear Information System (INIS)

    Terzo, S; Macchiolo, A; Nisius, R; Paschen, B

    2014-01-01

    Silicon pixel modules employing n-in-p planar sensors with an active thickness of 200 μm, produced at CiS, and 100-200 μm thin active/slim edge sensor devices, produced at VTT in Finland have been interconnected to ATLAS FE-I3 and FE-I4 read-out chips. The thin sensors are designed for high energy physics collider experiments to ensure radiation hardness at high fluences. Moreover, the active edge technology of the VTT production maximizes the sensitive region of the assembly, allowing for a reduced overlap of the modules in the pixel layer close to the beam pipe. The CiS production includes also four chip sensors according to the module geometry planned for the outer layers of the upgraded ATLAS pixel detector to be operated at the HL-LHC. The modules have been characterized using radioactive sources in the laboratory and with high precision measurements at beam tests to investigate the hit efficiency and charge collection properties at different bias voltages and particle incidence angles. The performance of the different sensor thicknesses and edge designs are compared before and after irradiation up to a fluence of 1.4 × 10 16 n eq /cm 2

  18. Surface Effects in Segmented Silicon Sensors

    OpenAIRE

    Kopsalis, Ioannis

    2017-01-01

    Silicon detectors in Photon Science and Particle Physics require silicon sensors with very demanding specifications. New accelerators like the European X-ray Free Electron Laser (EuXFEL) and the High Luminosity upgrade of the Large Hadron Collider (HL-LHC), pose new challenges for silicon sensors, especially with respect to radiation hardness. High radiation doses and fluences damage the silicon crystal and the SiO2 layers at the surface, thus changing the sensor properties and limiting their...

  19. 3D active edge silicon sensors: Device processing, yield and QA for the ATLAS-IBL production

    Energy Technology Data Exchange (ETDEWEB)

    Da Vià, Cinzia; Boscardil, Maurizio; Dalla Betta, GianFranco; Darbo, Giovanni; Fleta, Celeste; Gemme, Claudia; Giacomini, Gabriele; Grenier, Philippe; Grinstein, Sebastian; Hansen, Thor-Erik; Hasi, Jasmine; Kenney, Christopher; Kok, Angela; La Rosa, Alessandro; Micelli, Andrea; Parker, Sherwood; Pellegrini, Giulio; Pohl, David-Leon; Povoli, Marco; Vianello, Elisa; Zorzi, Nicola; Watts, S. J.

    2013-01-01

    3D silicon sensors, where plasma micromachining is used to etch deep narrow apertures in the silicon substrate to form electrodes of PIN junctions, were successfully manufactured in facilities in Europe and USA. In 2011 the technology underwent a qualification process to establish its maturity for a medium scale production for the construction of a pixel layer for vertex detection, the Insertable B-Layer (IBL) at the CERN-LHC ATLAS experiment. The IBL collaboration, following that recommendation from the review panel, decided to complete the production of planar and 3D sensors and endorsed the proposal to build enough modules for a mixed IBL sensor scenario where 25% of 3D modules populate the forward and backward part of each stave. The production of planar sensors will also allow coverage of 100% of the IBL, in case that option was required. This paper will describe the processing strategy which allowed successful 3D sensor production, some of the Quality Assurance (QA) tests performed during the pre-production phase and the production yield to date.

  20. 3D active edge silicon sensors: Device processing, yield and QA for the ATLAS-IBL production

    Energy Technology Data Exchange (ETDEWEB)

    Da Vià, Cinzia, E-mail: cinzia.da.via@cern.ch [School of Physics and Astronomy, The University of Manchester, Oxford Road, M13 9PL Manchester (United Kingdom); Boscardil, Maurizio [Fondazione Bruno Kessler, FBK-CMM, Via Sommarive 18, I-38123 Trento (Italy); Dalla Betta, GianFranco [DISI, Università degli Studi di Trento and INFN, Via Sommarive 14, I-38123 Trento (Italy); Darbo, Giovanni [INFN Sezione di Genova, Via Dodecaneso 33, I-14146 Genova (Italy); Fleta, Celeste [Centro Nacional de Microelectronica, CNM-IMB (CSIC), Barcelona E-08193 (Spain); Gemme, Claudia [INFN Sezione di Genova, Via Dodecaneso 33, I-14146 Genova (Italy); Giacomini, Gabriele [Fondazione Bruno Kessler, FBK-CMM, Via Sommarive 18, I-38123 Trento (Italy); Grenier, Philippe [SLAC National Accelerator Laboratory, 2575 Sand Hill Rd, Menlo Park, CA 94025 (United States); Grinstein, Sebastian [Institut de Fisica d' Altes Energies (IFAE) and ICREA, Universitat Autonoma de Barcelona (UAB) E-08193, Bellaterra, Barcelona (Spain); Hansen, Thor-Erik [SINTEF MiNaLab, Blindern, N-0314 Oslo (Norway); Hasi, Jasmine; Kenney, Christopher [SLAC National Accelerator Laboratory, 2575 Sand Hill Rd, Menlo Park, CA 94025 (United States); Kok, Angela [SINTEF MiNaLab, Blindern, N-0314 Oslo (Norway); La Rosa, Alessandro [CERN CH 1211, Geneva 23 (Switzerland); Micelli, Andrea [Tne University of Udine and INFN, via del Cotonificio 108, 33100 Udine (Italy); Parker, Sherwood [University of Hawaii, c/o Lawrence Berkeley Laboratory, Berkeley, CA 94720 (United States); Pellegrini, Giulio [Centro Nacional de Microelectronica, CNM-IMB (CSIC), Barcelona E-08193 (Spain); Pohl, David-Leon [Physikalisches Institut der Universität Bonn, Nußallee 12 D-53115, Bonn, Federal Republic of Germany (Germany); Povoli, Marco [DISI, Università degli Studi di Trento and INFN, Via Sommarive 14, I-38123 Trento (Italy); and others

    2013-01-21

    3D silicon sensors, where plasma micromachining is used to etch deep narrow apertures in the silicon substrate to form electrodes of PIN junctions, were successfully manufactured in facilities in Europe and USA. In 2011 the technology underwent a qualification process to establish its maturity for a medium scale production for the construction of a pixel layer for vertex detection, the Insertable B-Layer (IBL) at the CERN-LHC ATLAS experiment. The IBL collaboration, following that recommendation from the review panel, decided to complete the production of planar and 3D sensors and endorsed the proposal to build enough modules for a mixed IBL sensor scenario where 25% of 3D modules populate the forward and backward part of each stave. The production of planar sensors will also allow coverage of 100% of the IBL, in case that option was required. This paper will describe the processing strategy which allowed successful 3D sensor production, some of the Quality Assurance (QA) tests performed during the pre-production phase and the production yield to date.

  1. Porous Silicon Sensors- Elusive and Erudite

    OpenAIRE

    H. Saha, Prof.

    2017-01-01

    Porous Silicon Sensors have been fabricated and tested successfully over the last few years as humidity sensors, vapour sensors, gas sensors, piezoresistive pressure sensors and bio- sensors. In each case it has displayed remarkably sensitivity, relatively low temperature operation and ease of fabrication. Brief description of fabrication and properties of all these types of different sensors is reported in this paper. The barriers of porous silicon like contact, non- uniformity, instability ...

  2. Microelectronic temperature sensor; silicon temperature sensor

    International Nuclear Information System (INIS)

    Beitner, M.; Kanert, W.; Reichert, H.

    1982-01-01

    The goal of this work was to develop a silicon temperature sensor with a sensitivity and a reliability as high and a tolerance as small as possible, for use in measurement and control. By employing the principle of spreading-resistance, using silicon doped by neutron transmutation, and trimming of the single wafer tolerances of resistance less than +- 5% can be obtained; overstress tests yielded a long-term stability better than 0.2%. Some applications show the advantageous use of this sensor. (orig.) [de

  3. Novel silicon n-on-p edgeless planar pixel sensors for the ATLAS upgrade

    Energy Technology Data Exchange (ETDEWEB)

    Bomben, M., E-mail: marco.bomben@cern.ch [Laboratoire de Physique Nucleaire et de Hautes Énergies (LPNHE), Paris (France); Bagolini, A.; Boscardin, M. [Fondazione Bruno Kessler, Centro per i Materiali e i Microsistemi (FBK-CMM) Povo di Trento (Italy); Bosisio, L. [Università di Trieste, Dipartimento di Fisica and INFN, Trieste (Italy); Calderini, G. [Laboratoire de Physique Nucleaire et de Hautes Énergies (LPNHE), Paris (France); Dipartimento di Fisica E. Fermi, Università di Pisa, Pisa (Italy); INFN Sez. di Pisa, Pisa (Italy); Chauveau, J. [Laboratoire de Physique Nucleaire et de Hautes Énergies (LPNHE), Paris (France); Giacomini, G. [Fondazione Bruno Kessler, Centro per i Materiali e i Microsistemi (FBK-CMM) Povo di Trento (Italy); La Rosa, A. [Section de Physique (DPNC), Université de Genève, Genève (Switzerland); Marchiori, G. [Laboratoire de Physique Nucleaire et de Hautes Énergies (LPNHE), Paris (France); Zorzi, N. [Fondazione Bruno Kessler, Centro per i Materiali e i Microsistemi (FBK-CMM) Povo di Trento (Italy)

    2013-12-01

    In view of the LHC upgrade phases towards HL-LHC, the ATLAS experiment plans to upgrade the inner detector with an all-silicon system. The n-on-p silicon technology is a promising candidate for the pixel upgrade thanks to its radiation hardness and cost effectiveness. The edgeless technology would allow for enlarging the area instrumented with pixel detectors. We report on the development of novel n-on-p edgeless planar pixel sensors fabricated at FBK (Trento, Italy), making use of the active edge concept for the reduction of the dead area at the periphery of the device. After discussing the sensor technology and fabrication process, we present device simulations (pre- and post-irradiation) performed for different sensor configurations. First preliminary results obtained with the test-structures of the production are shown.

  4. Novel silicon n-on-p edgeless planar pixel sensors for the ATLAS upgrade

    International Nuclear Information System (INIS)

    Bomben, M.; Bagolini, A.; Boscardin, M.; Bosisio, L.; Calderini, G.; Chauveau, J.; Giacomini, G.; La Rosa, A.; Marchiori, G.; Zorzi, N.

    2013-01-01

    In view of the LHC upgrade phases towards HL-LHC, the ATLAS experiment plans to upgrade the inner detector with an all-silicon system. The n-on-p silicon technology is a promising candidate for the pixel upgrade thanks to its radiation hardness and cost effectiveness. The edgeless technology would allow for enlarging the area instrumented with pixel detectors. We report on the development of novel n-on-p edgeless planar pixel sensors fabricated at FBK (Trento, Italy), making use of the active edge concept for the reduction of the dead area at the periphery of the device. After discussing the sensor technology and fabrication process, we present device simulations (pre- and post-irradiation) performed for different sensor configurations. First preliminary results obtained with the test-structures of the production are shown

  5. Laboratory course on silicon sensors

    CERN Document Server

    Crescio, E; Roe, S; Rudge, A

    2003-01-01

    The laboratory course consisted of four different mini sessions, in order to give the student some hands-on experience on various aspects of silicon sensors and related integrated electronics. The four experiments were. 1. Characterisation of silicon diodes for particle detection 2. Study of noise performance of the Viking readout circuit 3. Study of the position resolution of a silicon microstrip sensor 4. Study of charge transport in silicon with a fast amplifier The data in the following were obtained during the ICFA school by the students.

  6. Edge-TCT measurements on irradiated HV CMOS sensors

    CERN Document Server

    Weisser, Constantin

    2014-01-01

    Passive $100 \\times 100 \\,\\mu$m test diodes in an unirradiated and an irradiated HV2FEI4v3 HV-CMOS silicon sensor were analysed using the edge TCT technique. To integrate the sensor into the setup a PCB was designed to extract the signals, a cooling mechanism was constructed and the system housed in a shielding box. The observed signal had fast and slow contributions, that were interpreted as drift and diffusion. The former peaked in a region, that was interpreted as the depletion region, while the latter peaked further in the bulk material. Raising the bias voltage increased the depth of the former region, while pushing the latter region further into the bulk. The irradiated sample lost signal strength mainly in its slow part compared to the unirradiated sample, while its quick signal remained largely unaffected. As only the signal interpreted as drift is fast enough to be useful in LHC operation the investigated sensors could be considered radiation hard for this purpose. This gives further promise to ...

  7. A probe station for testing silicon sensors

    CERN Multimedia

    Ulysse, Fichet

    2017-01-01

    A probe station for testing silicon sensors. The probe station is located inside a dark box that can keep away light during the measurement. The set-up is located in the DSF (Department Silicon Facility). The golden plate is the "chuck" where the sensor is usually placed on. With the help of "manipulators", thin needles can be precisely positioned that can contact the sensor surface. Using these needles and the golden chuck, a high voltage can be applied to the sensor to test its behaviour under high voltage. We will use the silicon sensors that we test here for building prototypes of a highly granular sandwich calorimeter, the CMS HGC (Highly granular Calorimeter) upgrade for High-Luminosity LHC.

  8. Sensors for ultra-fast silicon detectors

    Energy Technology Data Exchange (ETDEWEB)

    Sadrozinski, H.F.-W., E-mail: hartmut@scipp.ucsc.edu [Santa Cruz Institute for Particle Physics, UC Santa Cruz, Santa Cruz, CA 95064 (United States); Baselga, M.; Ely, S.; Fadeyev, V.; Galloway, Z.; Ngo, J.; Parker, C.; Schumacher, D.; Seiden, A.; Zatserklyaniy, A. [Santa Cruz Institute for Particle Physics, UC Santa Cruz, Santa Cruz, CA 95064 (United States); Cartiglia, N. [INFN Torino, Torino (Italy); Pellegrini, G.; Fernández-Martínez, P.; Greco, V.; Hidalgo, S.; Quirion, D. [Centro Nacional de Microelectrónica, IMB-CNM-CSIC, Barcelona (Spain)

    2014-11-21

    We report on electrical and charge collection tests of silicon sensors with internal gain as part of our development of ultra-fast silicon detectors. Using C–V and α TCT measurements, we investigate the non-uniform doping profile of so-called low-gain avalanche detectors (LGAD). These are n-on-p pad sensors with charge multiplication due to the presence of a thin, low-resistivity diffusion layer below the junction, obtained with a highly doped implant. We compare the bias dependence of the pulse shapes of traditional sensors and of LGAD sensors with different dopant density of the diffusion layer, and extract the internal gain.

  9. Sensors for ultra-fast silicon detectors

    International Nuclear Information System (INIS)

    Sadrozinski, H.F.-W.; Baselga, M.; Ely, S.; Fadeyev, V.; Galloway, Z.; Ngo, J.; Parker, C.; Schumacher, D.; Seiden, A.; Zatserklyaniy, A.; Cartiglia, N.; Pellegrini, G.; Fernández-Martínez, P.; Greco, V.; Hidalgo, S.; Quirion, D.

    2014-01-01

    We report on electrical and charge collection tests of silicon sensors with internal gain as part of our development of ultra-fast silicon detectors. Using C–V and α TCT measurements, we investigate the non-uniform doping profile of so-called low-gain avalanche detectors (LGAD). These are n-on-p pad sensors with charge multiplication due to the presence of a thin, low-resistivity diffusion layer below the junction, obtained with a highly doped implant. We compare the bias dependence of the pulse shapes of traditional sensors and of LGAD sensors with different dopant density of the diffusion layer, and extract the internal gain

  10. Characteristics of Ir/Au transition edge sensor

    International Nuclear Information System (INIS)

    Kunieda, Yuichi; Ohno, Masashi; Nakazawa, Masaharu; Takahashi, Hiroyuki; Fukuda, Daiji; Ohkubo, Masataka

    2004-01-01

    A new type of microcalorimeter has been developed using a transition edge sensor (TES) and an electro-thermal feedback (ETF) method to achieve higher energy resolution and higher count rate. We are developing a superconducting Ir-based transition edge sensor (TES) microcalorimeters. To improve thermal conductivity and achieve higher energy resolution with an Ir-TES, we fabricated an Ir/Au bilayer TES by depositing gold on Ir and investigated the influence of intermediate between superconducting and normal states at the transition edge for signal responses by microscopic observation in the Ir/Au-TES. (T. Tanaka)

  11. Performance of active edge pixel sensors

    Science.gov (United States)

    Bomben, M.; Ducourthial, A.; Bagolini, A.; Boscardin, M.; Bosisio, L.; Calderini, G.; D'Eramo, L.; Giacomini, G.; Marchiori, G.; Zorzi, N.; Rummler, A.; Weingarten, J.

    2017-05-01

    To cope with the High Luminosity LHC harsh conditions, the ATLAS inner tracker has to be upgraded to meet requirements in terms of radiation hardness, pile up and geometrical acceptance. The active edge technology allows to reduce the insensitive area at the border of the sensor thanks to an ion etched trench which avoids the crystal damage produced by the standard mechanical dicing process. Thin planar n-on-p pixel sensors with active edge have been designed and produced by LPNHE and FBK foundry. Two detector module prototypes, consisting of pixel sensors connected to FE-I4B readout chips, have been tested with beams at CERN and DESY. In this paper the performance of these modules are reported. In particular the lateral extension of the detection volume, beyond the pixel region, is investigated and the results show high hit efficiency also at the detector edge, even in presence of guard rings.

  12. Photonic Crystal Sensors Based on Porous Silicon

    Directory of Open Access Journals (Sweden)

    Claudia Pacholski

    2013-04-01

    Full Text Available Porous silicon has been established as an excellent sensing platform for the optical detection of hazardous chemicals and biomolecular interactions such as DNA hybridization, antigen/antibody binding, and enzymatic reactions. Its porous nature provides a high surface area within a small volume, which can be easily controlled by changing the pore sizes. As the porosity and consequently the refractive index of an etched porous silicon layer depends on the electrochemial etching conditions photonic crystals composed of multilayered porous silicon films with well-resolved and narrow optical reflectivity features can easily be obtained. The prominent optical response of the photonic crystal decreases the detection limit and therefore increases the sensitivity of porous silicon sensors in comparison to sensors utilizing Fabry-Pérot based optical transduction. Development of porous silicon photonic crystal sensors which allow for the detection of analytes by the naked eye using a simple color change or the fabrication of stacked porous silicon photonic crystals showing two distinct optical features which can be utilized for the discrimination of analytes emphasize its high application potential.

  13. Photonic Crystal Sensors Based on Porous Silicon

    Science.gov (United States)

    Pacholski, Claudia

    2013-01-01

    Porous silicon has been established as an excellent sensing platform for the optical detection of hazardous chemicals and biomolecular interactions such as DNA hybridization, antigen/antibody binding, and enzymatic reactions. Its porous nature provides a high surface area within a small volume, which can be easily controlled by changing the pore sizes. As the porosity and consequently the refractive index of an etched porous silicon layer depends on the electrochemial etching conditions photonic crystals composed of multilayered porous silicon films with well-resolved and narrow optical reflectivity features can easily be obtained. The prominent optical response of the photonic crystal decreases the detection limit and therefore increases the sensitivity of porous silicon sensors in comparison to sensors utilizing Fabry-Pérot based optical transduction. Development of porous silicon photonic crystal sensors which allow for the detection of analytes by the naked eye using a simple color change or the fabrication of stacked porous silicon photonic crystals showing two distinct optical features which can be utilized for the discrimination of analytes emphasize its high application potential. PMID:23571671

  14. Extreme-Environment Silicon-Carbide (SiC) Wireless Sensor Suite

    Science.gov (United States)

    Yang, Jie

    2015-01-01

    Phase II objectives: Develop an integrated silicon-carbide wireless sensor suite capable of in situ measurements of critical characteristics of NTP engine; Compose silicon-carbide wireless sensor suite of: Extreme-environment sensors center, Dedicated high-temperature (450 deg C) silicon-carbide electronics that provide power and signal conditioning capabilities as well as radio frequency modulation and wireless data transmission capabilities center, An onboard energy harvesting system as a power source.

  15. Fabrication of close-packed TES microcalorimeter arrays using superconducting molybdenum/gold transition-edge sensors

    Science.gov (United States)

    Finkbeiner, F. M.; Brekosky, R. P.; Chervenak, J. A.; Figueroa-Feliciano, E.; Li, M. J.; Lindeman, M. A.; Stahle, C. K.; Stahle, C. M.; Tralshawala, N.

    2002-02-01

    We present an overview of our efforts in fabricating Transition-Edge Sensor (TES) microcalorimeter arrays for use in astronomical x-ray spectroscopy. Two distinct types of array schemes are currently pursued: 5×5 single pixel TES array where each pixel is a TES microcalorimeter, and Position-Sensing TES (PoST) array. In the latter, a row of 7 or 15 thermally-linked absorber pixels is read out by two TES at its ends. Both schemes employ superconducting Mo/Au bilayers as the TES. The TES are placed on silicon nitride membranes for thermal isolation from the structural frame. The silicon nitride membranes are prepared by a Deep Reactive Ion Etch (DRIE) process into a silicon wafer. In order to achieve the concept of closely packed arrays without decreasing its structural and functional integrity, we have already developed the technology to fabricate arrays of cantilevered pixel-sized absorbers and slit membranes in silicon nitride films. Furthermore, we have started to investigate ultra-low resistance through-wafer micro-vias to bring the electrical contact out to the back of a wafer. .

  16. Thermal properties of calorimeters with Ti/Au transition-edge sensors on silicon nitride membranes

    International Nuclear Information System (INIS)

    Ukibe, M.; Tanaka, K.; Koyanagi, M.; Morooka, T.; Pressler, H.; Ohkubo, M.; Kobayashi, N.

    2000-01-01

    We are developing X-ray microcalorimeters employing superconducting-transition-edge sensors (TESs) for relatively high operation-temperatures of an 3 He cryostat. The TESs are proximity bilayers of Ti and Au. An important thermal parameters, the thermal conductance G, of the microcalorimeters on SiN x membranes was evaluated by a simple method using R-T curves at different bias currents. It has been shown that the G value can be controlled by altering the membrane thickness and size

  17. Silicon sensor probing and radiation studies for the LHCb silicon tracker

    International Nuclear Information System (INIS)

    Lois, Cristina

    2006-01-01

    The LHCb Silicon Tracker (ST) will be built using silicon micro-strip technology. A total of 1400 sensors, with strip pitches of approximately 200μm and three different substrate thicknesses, will be used to cover the sensitive area with readout strips up to 38cm in length. We present the quality assurance program followed by the ST group together with the results obtained for the first batches of sensors from the main production. In addition, we report on an investigation of the radiation hardness of the sensors. Prototype sensors were irradiated with 24GeV/c protons up to fluences equivalent to 20 years of LHCb operation. The damage coefficient for the leakage current was studied, and full depletion voltages were determined

  18. Fabrication of a silicon oxide stamp by edge lithography reinforced with silicon nitride for nanoimprint lithography

    NARCIS (Netherlands)

    Zhao, Yiping; Berenschot, Johan W.; de Boer, M.; de Boer, Meint J.; Jansen, Henricus V.; Tas, Niels Roelof; Huskens, Jurriaan; Elwenspoek, Michael Curt

    2008-01-01

    The fabrication of a stamp reinforced with silicon nitride is presented for its use in nanoimprint lithography. The fabrication process is based on edge lithography using conventional optical lithography and wet anisotropic etching of 110 silicon wafers. SiO2 nano-ridges of 20 nm in width were

  19. Pixel Sensors with slim edges and small pitches for the CMS upgrades for HL-LHC

    CERN Document Server

    AUTHOR|(CDS)2084134; Bolla, Gino; Rivera, Ryan Allen; Uplegger, Lorenzo; Zoi, Irene

    2016-01-01

    Planar n-in-n silicon detectors with small pitches and slim edges are being investigated for the innermost layers of tracking devices for the foreseen upgrades of the LHC. Sensor prototypes compatible with the CMS readout, fabricated by Sintef, were tested in the laboratory and with a 120~GeV/c proton beam at the Fermilab test beam facility before and after irradiation with up to 2x10$^{15}$ n$_{eq}/$cm$^2$ fluence. Preliminary results of the data analysis are presented.

  20. A radiographic imaging system based upon a 2-D silicon microstrip sensor

    CERN Document Server

    Papanestis, A; Corrin, E; Raymond, M; Hall, G; Triantis, F A; Manthos, N; Evagelou, I; Van den Stelt, P; Tarrant, T; Speller, R D; Royle, G F

    2000-01-01

    A high resolution, direct-digital detector system based upon a 2-D silicon microstrip sensor has been designed, built and is undergoing evaluation for applications in dentistry and mammography. The sensor parameters and image requirements were selected using Monte Carlo simulations. Sensors selected for evaluation have a strip pitch of 50mum on the p-side and 80mum on the n-side. Front-end electronics and data acquisition are based on the APV6 chip and were adapted from systems used at CERN for high-energy physics experiments. The APV6 chip is not self-triggering so data acquisition is done at a fixed trigger rate. This paper describes the mammographic evaluation of the double sided microstrip sensor. Raw data correction procedures were implemented to remove the effects of dead strips and non-uniform response. Standard test objects (TORMAX) were used to determine limiting spatial resolution and detectability. MTFs were determined using the edge response. The results indicate that the spatial resolution of the...

  1. Planar slim-edge pixel sensors for the ATLAS upgrades

    International Nuclear Information System (INIS)

    Altenheiner, S; Goessling, C; Jentzsch, J; Klingenberg, R; Lapsien, T; Rummler, A; Troska, G; Wittig, T; Muenstermann, D

    2012-01-01

    The ATLAS detector at CERN is a general-purpose experiment at the Large Hadron Collider (LHC). The ATLAS Pixel Detector is the innermost tracking detector of ATLAS and requires a sufficient level of hermeticity to achieve superb track reconstruction performance. The current planar n-type pixel sensors feature a pixel matrix of n + -implantations which is (on the opposite p-side) surrounded by so-called guard rings to reduce the high voltage stepwise towards the cutting edge and an additional safety margin. Because of the inactive region around the active area, the sensor modules have been shingled on top of each other's edge which limits the thermal performance and adds complexity in the present detector. The first upgrade phase of the ATLAS pixel detector will consist of the insertable b-layer (IBL), an additional b-layer which will be inserted into the present detector in 2013. Several changes in the sensor design with respect to the existing detector had to be applied to comply with the IBL's specifications and are described in detail. A key issue for the ATLAS upgrades is a flat arrangement of the sensors. To maintain the required level of hermeticity in the detector, the inactive sensor edges have to be reduced to minimize the dead space between the adjacent detector modules. Unirradiated and irradiated sensors with the IBL design have been operated in test beams to study the efficiency performance in the sensor edge region and it was found that the inactive edge width could be reduced from 1100 μm to less than 250 μm.

  2. Silicon Nanowire Fabrication Using Edge and Corner Lithography

    NARCIS (Netherlands)

    Yagubizade, H.; Berenschot, Johan W.; Jansen, Henricus V.; Elwenspoek, Michael Curt; Tas, Niels Roelof

    2010-01-01

    This paper presents a wafer scale fabrication method of single-crystalline silicon nanowires (SiNWs) bound by <111> planes using a combination of edge and corner lithography. These are methods of unconventional nanolithography for wafer scale nano-patterning which determine the size of nano-features

  3. Pixel sensors with slim edges and small pitches for the CMS upgrades for HL-LHC

    Energy Technology Data Exchange (ETDEWEB)

    Vernieri, Caterina, E-mail: cvernier@fnal.gov [Fermilab, Batavia, IL 60510 (United States); Bolla, Gino; Rivera, Ryan; Uplegger, Lorenzo [Fermilab, Batavia, IL 60510 (United States); Zoi, Irene [Fermilab, Batavia, IL 60510 (United States); University of Florence, Firenze, 50121 (Italy)

    2017-02-11

    Planar n-in-n silicon detectors with small pitches and slim edges are being investigated for the innermost layers of tracking devices for the foreseen upgrades of the LHC experiments. Sensor prototypes compatible with the CMS readout, fabricated by Sintef, were tested in the laboratory and with a 120 GeV/c proton beam at the Fermilab test beam facility before and after irradiation with up to 2×10{sup 15} n{sub eq}/cm{sup 2} fluence. Preliminary results of the data analysis are presented.

  4. Silicon K-edge XANES spectra of silicate minerals

    Science.gov (United States)

    Li, Dien; Bancroft, G. M.; Fleet, M. E.; Feng, X. H.

    1995-03-01

    Silicon K-edge x-ray absorption near-edge structure (XANES) spectra of a selection of silicate and aluminosilicate minerals have been measured using synchrotron radiation (SR). The spectra are qualitatively interpreted based on MO calculation of the tetrahedral SiO{4/4-}cluster. The Si K-edge generally shifts to higher energy with increased polymerization of silicates by about 1.3 eV, but with considerable overlap for silicates of different polymerization types. The substitution of Al for Si shifts the Si K-edge to lower energy. The chemical shift of Si K-edge is also sensitive to cations in more distant atom shells; for example, the Si K-edge shifts to lower energy with the substitution of Al for Mg in octahedral sites. The shifts of the Si K-edge show weak correlation with average Si-O bond distance (dSi-O), Si-O bond valence (sSi-O) and distortion of SiO4 tetrahedra, due to the crystal structure complexity of silicate minerals and multiple factors effecting the x-ray absorption processes.

  5. Surface effects in segmented silicon sensors

    Energy Technology Data Exchange (ETDEWEB)

    Kopsalis, Ioannis

    2017-05-15

    Silicon detectors in Photon Science and Particle Physics require silicon sensors with very demanding specifications. New accelerators like the European X-ray Free Electron Laser (EuXFEL) and the High Luminosity upgrade of the Large Hadron Collider (HL-LHC), pose new challenges for silicon sensors, especially with respect to radiation hardness. High radiation doses and fluences damage the silicon crystal and the SiO{sub 2} layers at the surface, thus changing the sensor properties and limiting their life time. Non-Ionizing Energy Loss (NIEL) of incident particles causes silicon crystal damage. Ionizing Energy Loss (IEL) of incident particles increases the densities of oxide charge and interface traps in the SiO{sub 2} and at the Si-SiO{sub 2} interface. In this thesis the surface radiation damage of the Si-SiO{sub 2} system on high-ohmic Si has been investigated using circular MOSFETs biased in accumulation and inversion at an electric field in the SiO{sub 2} of about 500 kV/cm. The MOSFETs have been irradiated by X-rays from an X-ray tube to a dose of about 17 kGy(SiO{sub 2}) in different irradiation steps. Before and after each irradiation step, the gate voltage has been cycled from inversion to accumulation conditions and back. From the dependence of the drain-source current on gate voltage the threshold voltage of the MOSFET and the hole and electron mobility at the Si-SiO{sub 2} interface were determined. In addition, from the measured drain-source current the change of the oxide charge density during irradiation has been determined. The interface trap density and the oxide charge has been determined separately using the subthreshold current technique based on the Brews charge sheet model which has been applied for first time on MOSFETs built on high-ohmic Si. The results show a significant field-direction dependence of the surface radiation parameters. The extracted parameters and the acquired knowledge can be used to improve simulations of the surface

  6. Surface effects in segmented silicon sensors

    International Nuclear Information System (INIS)

    Kopsalis, Ioannis

    2017-05-01

    Silicon detectors in Photon Science and Particle Physics require silicon sensors with very demanding specifications. New accelerators like the European X-ray Free Electron Laser (EuXFEL) and the High Luminosity upgrade of the Large Hadron Collider (HL-LHC), pose new challenges for silicon sensors, especially with respect to radiation hardness. High radiation doses and fluences damage the silicon crystal and the SiO 2 layers at the surface, thus changing the sensor properties and limiting their life time. Non-Ionizing Energy Loss (NIEL) of incident particles causes silicon crystal damage. Ionizing Energy Loss (IEL) of incident particles increases the densities of oxide charge and interface traps in the SiO 2 and at the Si-SiO 2 interface. In this thesis the surface radiation damage of the Si-SiO 2 system on high-ohmic Si has been investigated using circular MOSFETs biased in accumulation and inversion at an electric field in the SiO 2 of about 500 kV/cm. The MOSFETs have been irradiated by X-rays from an X-ray tube to a dose of about 17 kGy(SiO 2 ) in different irradiation steps. Before and after each irradiation step, the gate voltage has been cycled from inversion to accumulation conditions and back. From the dependence of the drain-source current on gate voltage the threshold voltage of the MOSFET and the hole and electron mobility at the Si-SiO 2 interface were determined. In addition, from the measured drain-source current the change of the oxide charge density during irradiation has been determined. The interface trap density and the oxide charge has been determined separately using the subthreshold current technique based on the Brews charge sheet model which has been applied for first time on MOSFETs built on high-ohmic Si. The results show a significant field-direction dependence of the surface radiation parameters. The extracted parameters and the acquired knowledge can be used to improve simulations of the surface radiation damage of silicon sensors.

  7. AlMn Transition Edge Sensors for Advanced ACTPol

    Science.gov (United States)

    Li, Dale; Austermann, Jason E.; Beall, James A.; Becker, Daniel T.; Duff, Shannon M.; Gallardo, Patricio A.; Henderson, Shawn W.; Hilton, Gene C.; Ho, Shuay-Pwu; Hubmayr, Johannes; Koopman, Brian J.; McMahon, Jeffrey J.; Nati, Federico; Niemack, Michael D.; Pappas, Christine G.; Salatino, Maria; Schmitt, Benjamin L.; Simon, Sara M.; Staggs, Suzanne T.; Van Lanen, Jeff; Ward, Jonathan T.; Wollack, Edward J.

    2016-07-01

    Advanced ACTPol (AdvACT) will use an array of multichroic polarization-sensitive AlMn transition edge sensor (TES) bolometers read out through time-division multiplexing. Aluminum doped with a low concentration of manganese can be deposited to a bulk film thickness for a more reliable superconducting critical temperature uniformity compared to thin bilayers. To build the TES, the AlMn alloy is deposited, over Nb wiring, to a specific thickness to set the TES normal resistance. The doping concentration of manganese coarsely defines the TES critical temperature, while a fine tuning is achieved by heating the deposited film to a specific temperature. The TES island is connected to the thermal bath via four silicon-nitride membranes, where their geometry defines the thermal conductance to the temperature of the bath. Lastly, the TES heat capacity is increased by addition of PdAu electrically connected to the AlMn film. Designs and performance characteristics of these AlMn TESs are presented for use in AdvACT.

  8. AlMn Transition Edge Sensors for Advanced ACTPol

    Science.gov (United States)

    Li, Dale; Austermann, Jason E.; Beall, James A.; Tucker, Daniel T.; Duff, Shannon M.; Gallardo, Patricio A.; Henderson, Shawn W.; Hilton, Gene C.; Ho, Shuay-Pwu; Hubmayr, Johannes; hide

    2016-01-01

    Advanced ACTPol (Adv ACT) will use an array of multichroic polarization sensitive AIMn transition edge sensor (TES) bolometers read out through time-division multiplexing. Aluminum doped with a low concentration of manganese can be deposited to a bulk film thickness for a more reliable superconducting critical temperature uniformity compared to thin bilayers. To build the TES, the AlMn alloy is deposited, over Nb wiring, to a specific thickness to set the TES normal resistance. The doping concentration of manganese coarsely defines the TES critical temperature, while a fine tuning is achieved by heating the deposited film to a specific temperature. The TES island is connected to the thermal bath via four silicon-nitride membranes, where their geometry defines the thermal conductance to the temperature of the bath. Lastly, the TES heat capacity is increased by addition of PdAu electrically connected to the AlMn film. Designs and performance characteristics of these AlMn TESs are presented for use in AdvACT.

  9. A portable readout system for silicon microstrip sensors

    International Nuclear Information System (INIS)

    Marco-Hernandez, Ricardo

    2010-01-01

    This system can measure the collected charge in one or two microstrip silicon sensors by reading out all the channels of the sensor(s), up to 256. The system is able to operate with different types (p- and n-type) and different sizes (up to 3 cm 2 ) of microstrip silicon sensors, both irradiated and non-irradiated. Heavily irradiated sensors will be used at the Super Large Hadron Collider, so this system can be used to research the performance of microstrip silicon sensors in conditions as similar as possible to the Super Large Hadron Collider operating conditions. The system has two main parts: a hardware part and a software part. The hardware part acquires the sensor signals either from external trigger inputs, in case of a radioactive source setup is used, or from a synchronised trigger output generated by the system, if a laser setup is used. The software controls the system and processes the data acquired from the sensors in order to store it in an adequate format. The main characteristics of the system are described. Results of measurements acquired with n- and p-type detectors using both the laser and the radioactive source setup are also presented and discussed.

  10. Evolution of silicon sensor technology in particle physics

    CERN Document Server

    Hartmann, Frank

    2017-01-01

    This informative monograph describes the technological evolution of silicon detectors and their impact on high energy particle physics. The author here marshals his own first-hand experience in the development and also the realization of the DELPHI, CDF II and the CMS tracking detector. The basic principles of small strip- and pixel-detectors are presented and also the final large-scale applications. The Evolution of Silicon Detector Technology acquaints readers with the manifold challenges involving the design of sensors and pushing this technology to the limits. The expert will find critical information that is so far only available in various slide presentation scattered over the world wide web. This practical introduction of silicon sensor technology and its day to day life in the lab also offers many examples to illustrate problems and their solutions over several detector generations. The new edition gives a detailed overview of the silicon sensor technology used at the LHC, from basic principles to act...

  11. A theoretical approach to photosynthetically active radiation silicon sensor

    International Nuclear Information System (INIS)

    Tamasi, M.J.L.; Martínez Bogado, M.G.

    2013-01-01

    This paper presents a theoretical approach for the development of low cost radiometers to measure photosynthetically active radiation (PAR). Two alternatives are considered: a) glass optical filters attached to a silicon sensor, and b) dielectric coating on a silicon sensor. The devices proposed are based on radiometers previously developed by the Argentine National Atomic Energy Commission. The objective of this work is to adapt these low cost radiometers to construct reliable instruments for measuring PAR. The transmittance of optical filters and sensor response have been analyzed for different dielectric materials, number of layers deposited, and incidence angles. Uncertainties in thickness of layer deposition were evaluated. - Highlights: • Design of radiometers to measure photosynthetically active radiation • The study has used a filter and a Si sensor to modify spectral response. • Dielectric multilayers on glass and silicon sensor • Spectral response related to different incidence angles, materials and spectra

  12. Experience on 3D silicon sensors for ATLAS IBL

    International Nuclear Information System (INIS)

    Darbo, G.

    2015-01-01

    3D silicon sensors, where plasma micro-machining is used to etch deep narrow apertures in the silicon substrate to form electrodes of PIN junctions, represent possible solutions for inner pixel layers of the tracking detectors in high energy physics experiments. This type of sensors has been developed for the Insertable B-Layer (IBL), an additional pixel layer that has been installed in ATLAS during the present shutdown of the LHC collider at CERN. It is presented here the experience in designing, testing and qualifying sensors and detector modules that have been used to equip part of the IBL. Based on the gained experience with 3D silicon sensors for the ATLAS IBL, we discuss possible new developments for the upgrade of ATLAS and CMS at the high-luminosity LHC (HL-LHC)

  13. Development of n+-in-p large-area silicon microstrip sensors for very high radiation environments – ATLAS12 design and initial results

    International Nuclear Information System (INIS)

    Unno, Y.; Edwards, S.O.; Pyatt, S.; Thomas, J.P.; Wilson, J.A.; Kierstead, J.; Lynn, D.; Carter, J.R.; Hommels, L.B.A.; Robinson, D.; Bloch, I.; Gregor, I.M.; Tackmann, K.; Betancourt, C.; Jakobs, K.; Kuehn, S.; Mori, R.; Parzefall, U.; Wiik-Fucks, L.; Clark, A.

    2014-01-01

    We have been developing a novel radiation-tolerant n + -in-p silicon microstrip sensor for very high radiation environments, aiming for application in the high luminosity large hadron collider. The sensors are fabricated in 6 in., p-type, float-zone wafers, where large-area strip sensor designs are laid out together with a number of miniature sensors. Radiation tolerance has been studied with ATLAS07 sensors and with independent structures. The ATLAS07 design was developed into new ATLAS12 designs. The ATLAS12A large-area sensor is made towards an axial strip sensor and the ATLAS12M towards a stereo strip sensor. New features to the ATLAS12 sensors are two dicing lines: standard edge space of 910 μm and slim edge space of 450 μm, a gated punch-through protection structure, and connection of orphan strips in a triangular corner of stereo strips. We report the design of the ATLAS12 layouts and initial measurements of the leakage current after dicing and the resistivity of the wafers

  14. Silicon nanowire structures as high-sensitive pH-sensors

    International Nuclear Information System (INIS)

    Belostotskaya, S O; Chuyko, O V; Kuznetsov, A E; Kuznetsov, E V; Rybachek, E N

    2012-01-01

    Sensitive elements for pH-sensors created on silicon nanostructures were researched. Silicon nanostructures have been used as ion-sensitive field effect transistor (ISFET) for the measurement of solution pH. Silicon nanostructures have been fabricated by 'top-down' approach and have been studied as pH sensitive elements. Nanowires have the higher sensitivity. It was shown, that sensitive element, which is made of 'one-dimensional' silicon nanostructure have bigger pH-sensitivity as compared with 'two-dimensional' structure. Integrated element formed from two p- and n-type nanowire ISFET ('inverter') can be used as high sensitivity sensor for local relative change [H+] concentration in very small volume.

  15. A fax-machine amorphous silicon sensor for X-ray detection

    Energy Technology Data Exchange (ETDEWEB)

    Alberdi, J. [Association EURATOM/CIEMAT, Madrid (Spain); Barcala, J.M. [Association EURATOM/CIEMAT, Madrid (Spain); Chvatchkine, V. [Association EURATOM/CIEMAT, Madrid (Spain); Ioudine, I. [Association EURATOM/CIEMAT, Madrid (Spain); Molinero, A. [Association EURATOM/CIEMAT, Madrid (Spain); Navarrete, J.J. [Association EURATOM/CIEMAT, Madrid (Spain); Yuste, C. [Association EURATOM/CIEMAT, Madrid (Spain)

    1996-10-01

    Amorphous silicon detectors have been used, basically, as solar cells for energetics applications. As light detectors, linear sensors are used in fax and photocopier machines because they can be built with a large size, low price and have a high radiation hardness. Due to these performances, amorphous silicon detectors have been used as radiation detectors, and, presently, some groups are developing matrix amorphous silicon detectors with built-in electronics for medical X-ray applications. Our group has been working on the design and development of an X-ray image system based on a commercial fax linear amorphous silicon detector. The sensor scans the selected area and detects light produced by the X-ray in a scintillator placed on the sensor. Image-processing software produces a final image with better resolution and definition. (orig.).

  16. Longitudinal Proximity Effect Superconducting Transition-Edge Sensor

    Data.gov (United States)

    National Aeronautics and Space Administration — Superconducting Transition-Edge Sensors (TESs) hold the highest energy resolving power of any nondispersive spectrometer.   They are used for imaging spectroscopy...

  17. An In-depth Study on Semitransparent amorphous Silicon Sensors

    International Nuclear Information System (INIS)

    Fernandez, M. G.; Ferrando, A.; Josa, M. I.; Molinero, A.; Oller, J. C.; Arce, P.; Calvo, E.; Figueroa, C. F.; Garcia, N.; Rodrigo, T.; Vila, I.; Virto, A. L.

    1999-01-01

    Semitransparent amorphous silicon sensors have been proposed as the 2D positioning sensors for the link system of the CMS alignment: An in-depth study of the actual performance of these sensors is here reported. (Author) 8 refs

  18. Systematic characterization and quality assurance of silicon micro-strip sensors for the Silicon Tracking System of the CBM experiment

    Science.gov (United States)

    Ghosh, P.

    2014-07-01

    The Silicon Tracking System (STS) is the central detector of the Compressed Baryonic Matter (CBM) experiment at future Facility for Anti-proton and Ion Research (FAIR) at Darmstadt. The task of the STS is to reconstruct trajectories of charged particles originating at relatively high multiplicities from the high rate beam-target interactions. The tracker comprises of 300 μm thick silicon double-sided micro-strip sensors. These sensors should be radiation hard in order to reconstruct charged particles up to a maximum radiation dose of 1 × 1014neqcm-2. Systematic characterization allows us to investigate the sensor response and perform quality assurance (QA) tests. In this paper, systematic characterization of prototype double-sided silicon micro-strip sensors will be discussed. This procedure includes visual, passive electrical, and radiation hardness test. Presented results include tests on three different prototypes of silicon micro-strip sensors.

  19. Systematic characterization and quality assurance of silicon micro-strip sensors for the Silicon Tracking System of the CBM experiment

    International Nuclear Information System (INIS)

    Ghosh, P

    2014-01-01

    The Silicon Tracking System (STS) is the central detector of the Compressed Baryonic Matter (CBM) experiment at future Facility for Anti-proton and Ion Research (FAIR) at Darmstadt. The task of the STS is to reconstruct trajectories of charged particles originating at relatively high multiplicities from the high rate beam-target interactions. The tracker comprises of 300 μm thick silicon double-sided micro-strip sensors. These sensors should be radiation hard in order to reconstruct charged particles up to a maximum radiation dose of 1 × 10 14 n eq cm −2 . Systematic characterization allows us to investigate the sensor response and perform quality assurance (QA) tests. In this paper, systematic characterization of prototype double-sided silicon micro-strip sensors will be discussed. This procedure includes visual, passive electrical, and radiation hardness test. Presented results include tests on three different prototypes of silicon micro-strip sensors

  20. Characterisation of edgeless technologies for pixellated and strip silicon detectors with a micro-focused X-ray beam

    Science.gov (United States)

    Bates, R.; Blue, A.; Christophersen, M.; Eklund, L.; Ely, S.; Fadeyev, V.; Gimenez, E.; Kachkanov, V.; Kalliopuska, J.; Macchiolo, A.; Maneuski, D.; Phlips, B. F.; Sadrozinski, H. F.-W.; Stewart, G.; Tartoni, N.; Zain, R. M.

    2013-01-01

    Reduced edge or ``edgeless'' detector design offers seamless tileability of sensors for a wide range of applications from particle physics to synchrotron and free election laser (FEL) facilities and medical imaging. Combined with through-silicon-via (TSV) technology, this would allow reduced material trackers for particle physics and an increase in the active area for synchrotron and FEL pixel detector systems. In order to quantify the performance of different edgeless fabrication methods, 2 edgeless detectors were characterized at the Diamond Light Source using an 11 μm FWHM 15 keV micro-focused X-ray beam. The devices under test were: a 150 μm thick silicon active edge pixel sensor fabricated at VTT and bump-bonded to a Medipix2 ROIC; and a 300 μm thick silicon strip sensor fabricated at CIS with edge reduction performed by SCIPP and the NRL and wire bonded to an ALiBaVa readout system. Sub-pixel resolution of the 55 μm active edge pixels was achieved. Further scans showed no drop in charge collection recorded between the centre and edge pixels, with a maximum deviation of 5% in charge collection between scanned edge pixels. Scans across the cleaved and standard guard ring edges of the strip detector also show no reduction in charge collection. These results indicate techniques such as the scribe, cleave and passivate (SCP) and active edge processes offer real potential for reduced edge, tiled sensors for imaging detection applications.

  1. Investigation of the impact of mechanical stress on the properties of silicon strip sensors

    CERN Document Server

    Affolder, Tony; The ATLAS collaboration

    2017-01-01

    The new ATLAS tracker for phase II will be composed of silicon pixel and strip sensor modules. The strip sensor module consists of silicon sensors, boards and readout chips. Adhesives are used to connect the modular components thermally and mechanically. It was shown that the silicon sensor is exposed to mechanical stress, due to temperature difference between construction and operation. Mechanical stress can damage the sensor and can change the electrical properties. The thermal induced tensile stress near to the surface of a silicon sensor in a module was simulated and the results are compared to a cooled module. A four point bending setup was used to measure the maximum tensile stress of silicon detectors and to verify the piezoresistive effects on two recent development sensor types used in ATLAS (ATLAS07 and ATLAS12). Changes in the interstrip, bulk and bias resistance and capacitance as well as the coupling capacitance and the implant resistance were measured. The Leakage current was observed to decreas...

  2. High precision silicon piezo resistive SMART pressure sensor

    International Nuclear Information System (INIS)

    Brown, Rod

    2005-01-01

    Instruments for test and calibration require a pressure sensor that is precise and stable. Market forces also dictate a move away from single measurand test equipment and, certainly in the case of pressure, away from single range equipment. A pressure 'module' is required which excels in pressure measurement but is interchangble with sensors for other measurands. A communications interface for such a sensor has been specified. Instrument Digital Output Sensor (IDOS) that permits this interchanagability and allows the sensor to be inside or outside the measuring instrument. This paper covers the design and specification of a silicon diaphragm piezo resistive SMART sensor using this interface. A brief history of instrument sensors will be given to establish the background to this development. Design choices of the silicon doping, bridge energisation method, temperature sensing, signal conversion, data processing, compensation method, communications interface will be discussed. The physical format of the 'in-instrument' version will be shown and then extended to the packaging design for the external version. Test results will show the accuracy achieved exceeds the target of 0.01%FS over a range of temperatures

  3. High precision silicon piezo resistive SMART pressure sensor

    Science.gov (United States)

    Brown, Rod

    2005-01-01

    Instruments for test and calibration require a pressure sensor that is precise and stable. Market forces also dictate a move away from single measurand test equipment and, certainly in the case of pressure, away from single range equipment. A pressure `module' is required which excels in pressure measurement but is interchangble with sensors for other measurands. A communications interface for such a sensor has been specified. Instrument Digital Output Sensor (IDOS) that permits this interchanagability and allows the sensor to be inside or outside the measuring instrument. This paper covers the design and specification of a silicon diaphragm piezo resistive SMART sensor using this interface. A brief history of instrument sensors will be given to establish the background to this development. Design choices of the silicon doping, bridge energisation method, temperature sensing, signal conversion, data processing, compensation method, communications interface will be discussed. The physical format of the `in-instrument' version will be shown and then extended to the packaging design for the external version. Test results will show the accuracy achieved exceeds the target of 0.01%FS over a range of temperatures.

  4. Design of the first full size ATLAS ITk Strip sensor for the endcap region

    CERN Document Server

    Lacasta, Carlos; The ATLAS collaboration

    2017-01-01

    The ATLAS collaboration is designing the full silicon tracker (ITk) that will operate in the HL-LHC replacing the current design. The silicon microstrip sensors for the barrel and the endcap regions in the ITk are fabricated in 6 inch, p-type, float-zone wafers, where large-area strip sensor designs are laid out together with a number of miniature sensors. The radiation tolerance and specific system issues like the need for slim edge of 450 µm have been tested with square shaped sensors intended for the barrel part of the tracker. This work presents the design of the first full size silicon microstrip sensor for the endcap region with a slim edge of 450 µm. The strip endcaps will consist of several wheels with two layers of silicon strip sensors each. The strips have to lie along the azimuthal direction, apart from a small stereo angle rotation (20 mrad on each side, giving 40 mrad total) for measuring the second coordinate of tracks. This stereo angle is built into the strip layout of the sensor and, in or...

  5. Design of the first full size ATLAS ITk Strip sensor for the endcap region

    CERN Document Server

    Lacasta, Carlos; The ATLAS collaboration

    2018-01-01

    The ATLAS collaboration is designing the full silicon tracker (ITk) that will operate in the HL-LHC replacing the current design. The silicon microstrip sensors for the barrel and the endcap regions in the ITk are fabricated in 6 inch, p-type, float-zone wafers, where large-area strip sensor designs are laid out together with a number of miniature sensors. The radiation tolerance and specific system issues like the need for slim edge of 450 μm have been tested with square shaped sensors intended for the barrel part of the tracker. This work presents the design of the first full size silicon microstrip sensor for the endcap region with a slim edge of 450 μm. The strip endcaps will consist of several wheels with two layers of silicon strip sensors each. The strips have to lie along the azimuthal direction, apart from a small stereo angle rotation (20 mrad on each side, giving 40 mrad total) for measuring the second coordinate of tracks. This stereo angle is built into the strip layout of the sensor and, in or...

  6. A silicon micromachined resonant pressure sensor

    International Nuclear Information System (INIS)

    Tang Zhangyang; Fan Shangchun; Cai Chenguang

    2009-01-01

    This paper describes the design, fabrication and test of a silicon micromachined resonant pressure sensor. A square membrane and a doubly clamped resonant beam constitute a compound structure. The former senses the pressure directly, while the latter changes its resonant frequency according to deformation of the membrane. The final output relation between the resonant frequency and the applied pressure is deducted according to the structure mechanical properties. Sensors are fabricated by micromachining technology, and then sealed in vaccum. These sensors are tested by open-loop and close-loop system designed on purpose. The experiment results demonstrate that the sensor has a sensitivity of 49.8Hz/kPa and repeatability of 0.08%.

  7. Radiation hardness of diamond and silicon sensors compared

    CERN Document Server

    de Boer, Wim; Furgeri, Alexander; Mueller, Steffen; Sander, Christian; Berdermann, Eleni; Pomorski, Michal; Huhtinen, Mika

    2007-01-01

    The radiation hardness of silicon charged particle sensors is compared with single crystal and polycrystalline diamond sensors, both experimentally and theoretically. It is shown that for Si- and C-sensors, the NIEL hypothesis, which states that the signal loss is proportional to the Non-Ionizing Energy Loss, is a good approximation to the present data. At incident proton and neutron energies well above 0.1 GeV the radiation damage is dominated by the inelastic cross section, while at non-relativistic energies the elastic cross section prevails. The smaller inelastic nucleon-Carbon cross section and the light nuclear fragments imply that at high energies diamond is an order of magnitude more radiation hard than silicon, while at energies below 0.1 GeV the difference becomes significantly smaller.

  8. Signals from fluorescent materials on the surface of silicon micro-strip sensors

    CERN Document Server

    Sperlich, Dennis; The ATLAS collaboration

    2017-01-01

    For the High-Luminosity Upgrade of the Large Hadron Collider at CERN, the ATLAS Inner Detector will be replaced with a new, all-silicon tracker. In order to minimise the amount of material in the detector, circuit boards with readout electronics will be glued on to the active area of the sensor. Several adhesives investigated to be used for the construction of detector modules were found to become fluorescent when exposed to UV light. These adhesives could become a light source in the high-radiation environment of the ATLAS detector. The effect of fluorescent material covering the sensor surface in a high- radiation environment has been studied for a silicon micro-strip sensor using a micro-focused X-ray beam. By pointing the beam both inside the sensor and parallel to the sensor surface, the sensor responses from direct hits and fluorescence can be compared with high precision. This contribution presents a setup to study the susceptibility of silicon strip sensors to light contamination from fluorescent mate...

  9. The silicon sensors for the Inner Tracker of the Compact Muon Solenoid Experiment

    International Nuclear Information System (INIS)

    Krammer, M.

    2003-01-01

    Full text: The Inner Tracker of the Compact Muon Solenoid Experiment, at present under construction, will consist of more than 24000 silicon strip sensors arranged in 10 central concentric layers and 2 X 9 discs at both ends. The total sensitive silicon area will exceed 200 m 2 . The silicon sensors are produced in various thicknesses and geometries. Each sensor has 512 or 768 implanted strips which will allow to measure the position of traversing high energy charged particles. This paper a short overview of the CMS tracker system. Subsequently the design of the silicon sensors is explained with special emphasis on the radiation hardness and on the high voltage stability of the sensors. Two companies share the production of these sensors. The quality of the sensors is extensively checked by several laboratories associated with CMS. Important electrical parameters are measured on the sensors themselves. In addition, dedicated test structures were designed by CMS which allow the monitoring of many parameters sensitive to the production process. By May 2003 about 3000 sensors were delivered and a large fraction of these sensors and tests structures was measured. A summary of these measurements will be given and the main results will be discussed

  10. Superconducting Metallic Glass Transition-Edge-Sensors

    Science.gov (United States)

    Hays, Charles C. (Inventor)

    2013-01-01

    A superconducting metallic glass transition-edge sensor (MGTES) and a method for fabricating the MGTES are provided. A single-layer superconducting amorphous metal alloy is deposited on a substrate. The single-layer superconducting amorphous metal alloy is an absorber for the MGTES and is electrically connected to a circuit configured for readout and biasing to sense electromagnetic radiation.

  11. Oriented Edge-Based Feature Descriptor for Multi-Sensor Image Alignment and Enhancement

    Directory of Open Access Journals (Sweden)

    Myung-Ho Ju

    2013-10-01

    Full Text Available In this paper, we present an efficient image alignment and enhancement method for multi-sensor images. The shape of the object captured in a multi-sensor images can be determined by comparing variability of contrast using corresponding edges across multi-sensor image. Using this cue, we construct a robust feature descriptor based on the magnitudes of the oriented edges. Our proposed method enables fast image alignment by identifying matching features in multi-sensor images. We enhance the aligned multi-sensor images through the fusion of the salient regions from each image. The results of stitching the multi-sensor images and their enhancement demonstrate that our proposed method can align and enhance multi-sensor images more efficiently than previous methods.

  12. Optimized optical devices for edge-coupling-enabled silicon photonics platform

    Science.gov (United States)

    Png, Ching Eng; Ang, Thomas Y. L.; Ong, Jun Rong; Lim, Soon Thor; Sahin, Ezgi; Chen, G. F. R.; Tan, D. T. H.; Guo, Tina X.; Wang, Hong

    2018-02-01

    We present a library of high-performance passive and active silicon photonic devices at the C-band that is specifically designed and optimized for edge-coupling-enabled silicon photonics platform. These devices meet the broadband (100 nm), low-loss (= 25 Gb/s), and polarization diversity requirements (TE and TM polarization extinction ratio beam splitters (PBSs), and high-speed modulators are some of the devices within our library. In particular, we have designed and fabricated inverse taper fiber-to-waveguide edge couplers of tip widths ranging from 120 nm to 200 nm, and we obtained a low coupling loss of 1.80+/-0.28 dB for 160 nm tip width. To achieve polarization diversity operation for inverse tapers, we have experimentally realized different designs of polarization beam splitters (PBS). Our optimized PBS has a measured extinction ratio of <= 25 dB for both the quasiTE modes, and quasi-TM modes. Additionally, a broadband (100 nm) directional coupler with a 50/50 power splitting ratio was experimentally realized on a small footprint of 20×3 μm2 . Last but not least, high-speed silicon modulators with a range of carrier doping concentrations and offset of the PN junction can be used to optimise the modulation efficiency, and insertion losses for operation at 25 GHz.

  13. Sensor assembly method using silicon interposer with trenches for three-dimensional binocular range sensors

    Science.gov (United States)

    Nakajima, Kazuhiro; Yamamoto, Yuji; Arima, Yutaka

    2018-04-01

    To easily assemble a three-dimensional binocular range sensor, we devised an alignment method for two image sensors using a silicon interposer with trenches. The trenches were formed using deep reactive ion etching (RIE) equipment. We produced a three-dimensional (3D) range sensor using the method and experimentally confirmed that sufficient alignment accuracy was realized. It was confirmed that the alignment accuracy of the two image sensors when using the proposed method is more than twice that of the alignment assembly method on a conventional board. In addition, as a result of evaluating the deterioration of the detection performance caused by the alignment accuracy, it was confirmed that the vertical deviation between the corresponding pixels in the two image sensors is substantially proportional to the decrease in detection performance. Therefore, we confirmed that the proposed method can realize more than twice the detection performance of the conventional method. Through these evaluations, the effectiveness of the 3D binocular range sensor aligned by the silicon interposer with the trenches was confirmed.

  14. Evaluation of the performance of irradiated silicon strip sensors for the forward detector of the ATLAS Inner Tracker Upgrade

    Energy Technology Data Exchange (ETDEWEB)

    Mori, R., E-mail: riccardo.mori@physik.uni-freiburg.de [Physikalisches Institut, Universität Freiburg, Hermann-Herder-Str. 3, D-79104 Freiburg (Germany); Allport, P.P.; Baca, M.; Broughton, J.; Chisholm, A.; Nikolopoulos, K.; Pyatt, S.; Thomas, J.P.; Wilson, J.A. [School of Physics and Astronomy, University of Birmingham, Birmingham B15 2TT (United Kingdom); Kierstead, J.; Kuczewski, P.; Lynn, D. [Brookhaven National Laboratory, Physics Department and Instrumentation Division, Upton, NY 11973-5000 (United States); Arratia-Munoz, M.I.; Hommels, L.B.A. [Cavendish Laboratory, University of Cambridge, JJ Thomson Avenue, Cambridge CB3 0HE (United Kingdom); Ullan, M.; Fleta, C.; Fernandez-Tejero, J. [Centro Nacional de Microelectronica (IMB-CNM, CSIC), Campus UAB-Bellaterra, 08193 Barcelona (Spain); Bloch, I.; Gregor, I.M.; Lohwasser, K. [DESY, Notkestrasse 85, 22607 Hambrug (Germany); and others

    2016-09-21

    The upgrade to the High-Luminosity LHC foreseen in about ten years represents a great challenge for the ATLAS inner tracker and the silicon strip sensors in the forward region. Several strip sensor designs were developed by the ATLAS collaboration and fabricated by Hamamatsu in order to maintain enough performance in terms of charge collection efficiency and its uniformity throughout the active region. Of particular attention, in the case of a stereo-strip sensor, is the area near the sensor edge where shorter strips were ganged to the complete ones. In this work the electrical and charge collection test results on irradiated miniature sensors with forward geometry are presented. Results from charge collection efficiency measurements show that at the maximum expected fluence, the collected charge is roughly halved with respect to the one obtained prior to irradiation. Laser measurements show a good signal uniformity over the sensor. Ganged strips have a similar efficiency as standard strips.

  15. Characterization and fabrication of Ti/Pd bilayers for transition-edge sensors

    International Nuclear Information System (INIS)

    Monticone, E; Taralli, E; Portesi, C; Fretto, M; Rocci, R; Cerri, R; Rajteri, M

    2009-01-01

    Transition-edge sensor (TES) microcalorimeters are extensively used as single photon detectors from infrared to x-ray. Their good energy resolution and photon number resolving capability at visible and near-infrared wavelengths make them powerful tools for quantum information and quantum computation. In this work we report details on the fabrication of Ti/Pd TESs deposited by e-beam evaporation on silicon nitride substrates. By the proximity effect between Ti and Pd, the Ti critical temperature was tuned down to 100 mK, usual working temperature for these devices. Sharp transition of two-three mK and reproducible Tc were obtained. The Pd material can be a valid alternative to widely used Au proximity material thanks to its stronger influence on the Ti layer, that allows to obtain the same temperature reduction with thinner layers. Thermal and electrical characteristics of Ti/Au and Ti/Pd bilayers are compared in view of single photon detection.

  16. Comparison of silicon strip tracker module size using large sensors from 6 inch wafers

    CERN Multimedia

    Honma, Alan

    1999-01-01

    Two large silicon strip sensor made from 6 inch wafers are placed next to each other to simulate the size of a CMS outer silicon tracker module. On the left is a prototype 2 sensor CMS inner endcap silicon tracker module made from 4 inch wafers.

  17. Results from a beam test of silicon strip sensors manufactured by Infineon Technologies AG

    Energy Technology Data Exchange (ETDEWEB)

    Dragicevic, M., E-mail: marko.dragicevic@oeaw.ac.at [Institute of High Energy Physics, Austrian Academy of Sciences, Vienna (Austria); Auzinger, G. [Institute of High Energy Physics, Austrian Academy of Sciences, Vienna (Austria); CERN, Geneva (Switzerland); Bartl, U. [Infineon Technologies Austria AG, Villach (Austria); Bergauer, T. [Institute of High Energy Physics, Austrian Academy of Sciences, Vienna (Austria); Gamerith, S.; Hacker, J. [Infineon Technologies Austria AG, Villach (Austria); König, A. [Institute of High Energy Physics, Austrian Academy of Sciences, Vienna (Austria); Infineon Technologies Austria AG, Villach (Austria); Kröner, F.; Kucher, E.; Moser, J.; Neidhart, T. [Infineon Technologies Austria AG, Villach (Austria); Schulze, H.-J. [Infineon Technologies AG, Munich (Germany); Schustereder, W. [Infineon Technologies Austria AG, Villach (Austria); Treberspurg, W. [Institute of High Energy Physics, Austrian Academy of Sciences, Vienna (Austria); Wübben, T. [Infineon Technologies Austria AG, Villach (Austria)

    2014-11-21

    Most modern particle physics experiments use silicon based sensors for their tracking systems. These sensors are able to detect particles generated in high energy collisions with high spatial resolution and therefore allow the precise reconstruction of particle tracks. So far only a few vendors were capable of producing silicon strip sensors with the quality needed in particle physics experiments. Together with the European-based semiconductor manufacturer Infineon Technologies AG (Infineon) the Institute of High Energy Physics of the Austrian Academy of Sciences (HEPHY) developed planar silicon strip sensors in p-on-n technology. This work presents the first results from a beam test of strip sensors manufactured by Infineon.

  18. A high-temperature silicon-on-insulator stress sensor

    International Nuclear Information System (INIS)

    Wang Zheyao; Tian Kuo; Zhou Youzheng; Pan Liyang; Liu Litian; Hu Chaohong

    2008-01-01

    A piezoresistive stress sensor is developed using silicon-on-insulator (SOI) wafers and calibrated for stress measurement for high-temperature applications. The stress sensor consists of 'silicon-island-like' piezoresistor rosettes that are etched on the SOI layer. This eliminates leakage current and enables excellent electrical insulation at high temperature. To compensate for the measurement errors caused by the misalignment of the piezoresistor rosettes with respect to the crystallographic axes, an anisotropic micromachining technique, tetramethylammonium hydroxide etching, is employed to alleviate the misalignment issue. To realize temperature-compensated stress measurement, a planar diode is fabricated as a temperature sensor to decouple the temperature information from the piezoresistors, which are sensitive to both stress and temperature. Design, fabrication and calibration of the piezoresistors are given. SOI-related characteristics such as piezoresistive coefficients and temperature coefficients as well as the influence of the buried oxide layer are discussed in detail

  19. P-Type Silicon Strip Sensors for the Future CMS Tracker

    CERN Document Server

    The Tracker Group of the CMS Collaboration

    2016-01-01

    The upgrade to the High-Luminosity LHC (HL-LHC) is expected to increase the LHC design luminosity by an order of magnitude. This will require silicon tracking detectors with a significantly higher radiation hardness. The CMS Tracker Collaboration has conducted an irradiation and measurement campaign to identify suitable silicon sensor materials and strip designs for the future outer tracker at CMS. Based on these results, the collaboration has chosen to use n-in-p type strip and macro-pixel sensors and focus further investigations on the optimization of that sensor type. This paper describes the main measurement results and conclusions that motivated this decision.

  20. Tracking efficiency and charge sharing of 3D silicon sensors at different angles in a 1.4T magnetic field

    CERN Document Server

    Gjersdal, H; Slaviec, T; Sandaker, H; Tsung, J; Bolle, E; Da Via, C; Wermes, N; Borri, M; Grinstein, S; Nordahl, P; Hugging, F; Dorholt, O; Rohne, O; La Rosa, A; Sjobaek, K; Tsybychev, D; Mastroberardino, A; Fazio, S; Su, D; Young, C; Hasi, J; Grenier, P; Hansson, P; Jackson, P; Kenney, C; Kocian, M

    2011-01-01

    A 3D silicon sensor fabricated at Stanford with electrodes penetrating throughout the entire silicon wafer and with active edges was tested in a 1.4 T magnetic field with a 180 GeV/c pion beam at the CERN SPS in May 2009. The device under test was bump-bonded to the ATLAS pixel FE-I3 readout electronics chip. Three readout electrodes were used to cover the 400 pm long pixel side, this resulting in a p-n inter-electrode distance of similar to 71 mu m. Its behavior was confronted with a planar sensor of the type presently installed in the ATLAS inner tracker. Time over threshold, charge sharing and tracking efficiency data were collected at zero and 15 angles with and without magnetic field. The latest is the angular configuration expected for the modules of the Insertable B-Layer (IBL) currently under study for the LHC phase 1 upgrade expected in 2014. (C) 2010 Elsevier B.V. All rights reserved.

  1. Phonon-mediated superconducting transition-edge sensor X-ray detectors for use in astronomy

    Science.gov (United States)

    Leman, Steven W.; Martinez-Galarce, Dennis S.; Brink, Paul L.; Cabrera, Blas; Castle, Joseph P.; Morse, Kathleen; Stern, Robert A.; Tomada, Astrid

    2004-09-01

    Superconducting Transition-Edge Sensors (TESs) are generating a great deal of interest in the areas of x-ray astrophysics and space science, particularly to develop them as large-array, imaging x-ray spectrometers. We are developing a novel concept that is based on position-sensitive macro-pixels placing TESs on the backside of a silicon or germanium absorber. Each x-ray absorbed will be position (X/δX and Y/δY ~ 100) and energy (E/δE ~ 1000) resolved via four distributed TES readouts. In the future, combining such macropixels with advances in multiplexing could lead to 30 by 30 arrays of close-packed macro-pixels equivalent to imaging instruments of 10 megapixels or more. We report on our progress to date and discuss its application to a plausible solar satellite mission and plans for future development.

  2. Coaxial-structured ZnO/silicon nanowires extended-gate field-effect transistor as pH sensor

    International Nuclear Information System (INIS)

    Li, Hung-Hsien; Yang, Chi-En; Kei, Chi-Chung; Su, Chung-Yi; Dai, Wei-Syuan; Tseng, Jung-Kuei; Yang, Po-Yu; Chou, Jung-Chuan; Cheng, Huang-Chung

    2013-01-01

    An extended-gate field-effect transistor (EGFET) of coaxial-structured ZnO/silicon nanowires as pH sensor was demonstrated in this paper. The oriented 1-μm-long silicon nanowires with the diameter of about 50 nm were vertically synthesized by the electroless metal deposition method at room temperature and were sequentially capped with the ZnO films using atomic layer deposition at 50 °C. The transfer characteristics (I DS –V REF ) of such ZnO/silicon nanowire EGFET sensor exhibited the sensitivity and linearity of 46.25 mV/pH and 0.9902, respectively for the different pH solutions (pH 1–pH 13). In contrast to the ZnO thin-film ones, the ZnO/silicon nanowire EGFET sensor achieved much better sensitivity and superior linearity. It was attributed to a high surface-to-volume ratio of the nanowire structures, reflecting a larger effective sensing area. The output voltage and time characteristics were also measured to indicate good reliability and durability for the ZnO/silicon nanowires sensor. Furthermore, the hysteresis was 9.74 mV after the solution was changed as pH 7 → pH 3 → pH 7 → pH 11 → pH 7. - Highlights: ► Coaxial-structured ZnO/silicon nanowire EGFET was demonstrated as pH sensor. ► EMD and ALD methods were proposed to fabricate ZnO/silicon nanowires. ► ZnO/silicon nanowire EGFET sensor achieved better sensitivity and linearity. ► ZnO/silicon nanowire EGFET sensor had good reliability and durability

  3. Testbeam studies of silicon microstrip sensor architectures modified to facilitate detector module mass production

    CERN Document Server

    Poley, Anne-luise; The ATLAS collaboration

    2016-01-01

    For the High Luminosity Upgrade of the LHC, the Inner Detector of the ATLAS detector will be replaced by an all-silicon tracker, consisting of pixel and strip sensor detector modules. Silicon strip sensors are being developed to meet both the tracking requirements in a high particle density environment and constraints imposed by the construction process. Several thousand wire bonds per module, connecting sensor strips and readout channels, need to be produced with high reliability and speed, requiring wire bond pads of sufficient size on each sensor strip. These sensor bond pads change the local sensor architecture and the resulting electric field and thus alter the sensor performance. These sensor regions with bond pads, which account for up to 10 % of a silicon strip sensor, were studied using both an electron beam at DESY and a micro-focused X-ray beam at the Diamond Light Source. This contribution presents measurements of the effective strip width in sensor regions where the structure of standard parallel...

  4. Design of a radiation hard silicon pixel sensor for X-ray science

    Energy Technology Data Exchange (ETDEWEB)

    Schwandt, Joern

    2014-06-15

    At DESY Hamburg the European X-ray Free-Electron Laser (EuXFEL) is presently under construction. The EuXFEL has unique properties with respect to X-ray energy, instantaneous intensity, pulse length, coherence and number of pulses/sec. These properties of the EuXFEL pose very demanding requirements for imaging detectors. One of the detector systems which is currently under development to meet these challenges is the Adaptive Gain Integrating Pixel Detector, AGIPD. It is a hybrid pixel-detector system with 1024 x 1024 p{sup +} pixels of dimensions 200 μm x 200 μm, made of 16 p{sup +}nn{sup +}- silicon sensors, each with 10.52 cm x 2.56 cm sensitive area and 500 μm thickness. The particular requirements for the AGIPD are a separation between noise and single photons down to energies of 5 keV, more than 10{sup 4} photons per pixel for a pulse duration of less than 100 fs, negligible pile-up at the EuXFEL repetition rate of 4.5 MHz, operation for X-ray doses up to 1 GGy, good efficiency for X-rays with energies between 5 and 20 keV, and minimal inactive regions at the edges. The main challenge in the sensor design is the required radiation tolerance and high operational voltage, which is required to reduce the so-called plasma effect. This requires a specially optimized sensor. The X-ray radiation damage results in a build-up of oxide charges and interface traps which lead to a reduction of the breakdown voltage, increased leakage current, increased interpixel capacitances and charge losses. Extensive TCAD simulations have been performed to understand the impact of X-ray radiation damage on the detector performance and optimize the sensor design. To take radiation damage into account in the simulation, radiation damage parameters have been determined on MOS capacitors and gate-controlled diodes as function of dose. The optimized sensor design was fabricated by SINTEF. Irradiation tests on test structures and sensors show that the sensor design is radiation hard and

  5. Gamma and Neutron Irradiation of Semitransparent Amorphous Silicon Sensors

    International Nuclear Information System (INIS)

    Carabe, J.; Fernandez, M. G.; Ferrando, A.; Fuentes, J.; Gandia, J.; Josa, M. I.; Molinero, A.; Oller, J. C.; Arce, P.; Calvo, E.; Figueroa, C. F.; Garcia, N.; Matorras, F.; Rodrigo, T.; Vila, I.; Virto, A. L.; Fenyvesi, A.; Molnar, J.; Sohler, D.

    1999-12-01

    Semitransparent amorphous silicon sensors are key elements for laser light 2D position reconstruction in the CMS multipoint alignment link system. Some of the sensors have to work in very hard radiation environment. We have irradiated with gammas, up to 10 Mrad, and neutrons, up to 10 ''14 cm''-2, two different type of sensors and measured their change in performance. (Author) 10 refs

  6. The mid-IR silicon photonics sensor platform (Conference Presentation)

    Science.gov (United States)

    Kimerling, Lionel; Hu, Juejun; Agarwal, Anuradha M.

    2017-02-01

    Advances in integrated silicon photonics are enabling highly connected sensor networks that offer sensitivity, selectivity and pattern recognition. Cost, performance and the evolution path of the so-called `Internet of Things' will gate the proliferation of these networks. The wavelength spectral range of 3-8um, commonly known as the mid-IR, is critical to specificity for sensors that identify materials by detection of local vibrational modes, reflectivity and thermal emission. For ubiquitous sensing applications in this regime, the sensors must move from premium to commodity level manufacturing volumes and cost. Scaling performance/cost is critically dependent on establishing a minimum set of platform attributes for point, wearable, and physical sensing. Optical sensors are ideal for non-invasive applications. Optical sensor device physics involves evanescent or intra-cavity structures for applied to concentration, interrogation and photo-catalysis functions. The ultimate utility of a platform is dependent on sample delivery/presentation modalities; system reset, recalibration and maintenance capabilities; and sensitivity and selectivity performance. The attributes and performance of a unified Glass-on-Silicon platform has shown good prospects for heterogeneous integration on materials and devices using a low cost process flow. Integrated, single mode, silicon photonic platforms offer significant performance and cost advantages, but they require discovery and qualification of new materials and process integration schemes for the mid-IR. Waveguide integrated light sources based on rare earth dopants and Ge-pumped frequency combs have promise. Optical resonators and waveguide spirals can enhance sensitivity. PbTe materials are among the best choices for a standard, waveguide integrated photodetector. Chalcogenide glasses are capable of transmitting mid-IR signals with high transparency. Integrated sensor case studies of i) high sensitivity analyte detection in

  7. A silicon-based electrochemical sensor for highly sensitive, specific, label-free and real-time DNA detection

    International Nuclear Information System (INIS)

    Guo, Yuanyuan; Su, Shao; Wei, Xinpan; Zhong, Yiling; Su, Yuanyuan; He, Yao; Huang, Qing; Fan, Chunhai

    2013-01-01

    We herein present a new kind of silicon-based electrochemical sensor using a gold nanoparticles-decorated silicon wafer (AuNPs@Si) as a high-performance electrode, which is facilely prepared via in situ AuNPs growth on a silicon wafer. Particularly significantly, the resultant electrochemical sensor is efficacious for label-free DNA detection with high sensitivity due to the unique merits of the prepared silicon-based electrode. Typically, DNA at remarkably low concentrations (1–10 fM) could be readily detected without requiring additional signal-amplification procedures, which is better than or comparable to the lowest DNA concentration ever detected via well-studied signal-amplification-assisted electrochemical sensors. Moreover, the silicon-based sensor features high specificity, allowing unambiguous discrimination of single-based mismatches. We further show that real-time DNA assembly is readily monitored via recording the intensity changes of current signals due to the robust thermal stability of the silicon-based electrode. The unprecedented advantages of the silicon-based electrochemical sensor would offer new opportunities for myriad sensing applications. (paper)

  8. Development of Silicon Sensor Characterization System for Future High Energy Physics Experiments

    OpenAIRE

    Preeti kumari; Kavita Lalwani; Ranjeet Dalal; Geetika Jain; Ashutosh Bhardwaj; Kirti Ranjan

    2015-01-01

    The Compact Muon Solenoid (CMS) is one of the general purpose experiments at the Large Hadron Collider (LHC), CERN and has its Tracker built of all silicon strip and pixel sensors. Si sensors are expected to play extremely important role in the upgrades of the existing Tracker for future high luminosity environment and will also be used in future lepton colliders. However, properties of the silicon sensors have to be carefully understood before they can be put in the extremely high luminos...

  9. Frequency-domain readout multiplexing of transition-edge sensor arrays

    Energy Technology Data Exchange (ETDEWEB)

    Lanting, T.M. [Physics Department, University of California, Berkeley, CA 94720 (United States)]. E-mail: tlanting@berkeley.edu; Arnold, K. [Physics Department, University of California, Berkeley, CA 94720 (United States); Cho, Hsiao-Mei [Physics Department, University of California, Berkeley, CA 94720 (United States); Clarke, John [Physics Department, University of California, Berkeley, CA 94720 (United States); Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720 (United States); Dobbs, Matt [Physics Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720 (United States); Holzapfel, William [Physics Department, University of California, Berkeley, CA 94720 (United States); Lee, Adrian T. [Physics Department, University of California, Berkeley, CA 94720 (United States); Physics Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720 (United States); Lueker, M. [Physics Department, University of California, Berkeley, CA 94720 (United States); Richards, P.L. [Physics Department, University of California, Berkeley, CA 94720 (United States); Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720 (United States); Space Sciences Laboratory, University of California, Berkeley, CA 94720 (United States); Smith, A.D. [Northrop-Grumman, Redondo Beach, CA 94278 (United States); Spieler, H.G. [Physics Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720 (United States)

    2006-04-15

    We have demonstrated frequency-domain readout multiplexing of eight channels for superconducting transition-edge sensor bolometer arrays. The multiplexed readout noise is 6.5 pA/{radical}Hz, well below the bolometer dark noise of 15-20 pA/{radical}Hz. We measure an upper limit on crosstalk of 0.004 between channels adjacent in frequency which meets our design requirement of 0.01. We have observed vibration insensitivity in our frequency-domain multiplexed transition-edge sensors, making this system very attractive for telescope and satellite observations. We also discuss extensions to our multiplexed readout. In particular, we are developing a SQUID flux-locked loop that is entirely cold and collaborating on digital multiplexer technology in order to scale up the number of multiplexed channels.

  10. Basic opto-electronics on silicon for sensor applications

    NARCIS (Netherlands)

    Joppe, J.L.; Bekman, H.H.P.Th.; de Krijger, A.J.T.; Albers, H.; Chalmers, J.; Chalmers, J.D.; Holleman, J.; Ikkink, T.J.; Ikkink, T.; van Kranenburg, H.; Zhou, M.-J.; Zhou, Ming-Jiang; Lambeck, Paul

    1994-01-01

    A general platform for integrated opto-electronic sensor systems on silicon is proposed. The system is based on a hybridly integrated semiconductor laser, ZnO optical waveguides and monolithic photodiodes and electronic circuiry.

  11. Radiation hard silicon particle detectors for HL-LHC—RD50 status report

    Energy Technology Data Exchange (ETDEWEB)

    Terzo, S., E-mail: Stefano.Terzo@mpp.mpg.de

    2017-02-11

    It is foreseen to significantly increase the luminosity of the LHC by upgrading towards the HL-LHC (High Luminosity LHC). The Phase-II-Upgrade scheduled for 2024 will mean unprecedented radiation levels, way beyond the limits of the silicon trackers currently employed. All-silicon central trackers are being studied in ATLAS, CMS and LHCb, with extremely radiation hard silicon sensors to be employed on the innermost layers. Within the RD50 Collaboration, a massive R&D program is underway across experimental boundaries to develop silicon sensors with sufficient radiation tolerance. We will present results of several detector technologies and silicon materials at radiation levels corresponding to HL-LHC fluences. Based on these results, we will give recommendations for the silicon detectors to be used at the different radii of tracking systems in the LHC detector upgrades. In order to complement the measurements, we also perform detailed simulation studies of the sensors. - Highlights: • The RD50 collaboration investigates the radiation hardness of silicon sensors. • Different approaches to simulate the detector response after irradiation are shown. • HV-CMOS are cost-effective solution for the outer pixel layers at HL-LHC. • 3D and thin planar sensors with slim edges are solutions for innermost layers at HL-LHC. • Sensors with intrinsic gain are investigated to develop ultra-fast silicon detectors.

  12. SALT segmented primary mirror: laboratory test results for FOGALE inductive edge sensors

    Science.gov (United States)

    Menzies, John; Gajjar, Hitesh; Buous, Sébastien; Buckley, David; Gillingham, Peter

    2010-07-01

    At the Southern African Large Telescope (SALT), in collaboration with FOGALE Nanotech, we have been testing the recently-developed new generation inductive edge sensors. The Fogale inductive sensor is one technology being evaluated as a possible replacement for the now defunct capacitance-based edge sensing system. We present the results of exhaustive environmental testing of two variants of the inductive sensor. In addition to the environmental testing including RH and temperature cycles, the sensor was tested for sensitivity to dust and metals. We also consider long-term sensor stability, as well as that of the electronics and of the glue used to bond the sensor to its supporting structure. A prototype design for an adjustable mount is presented which will allow for in-plane gap and shear variations present in the primary mirror configuration without adversely disturbing the figure of the individual mirror segments or the measurement accuracy.

  13. Timing performances and edge effects of detectors worked from 6-in. silicon slices

    International Nuclear Information System (INIS)

    Aiello, S.; Anzalone, A.; Cardella, G.; Cavallaro, Sl.; De Filippo, E.; Di Pietro, A.; Femino, S.; Geraci, M.; Giustolisi, F.; Guazzoni, P.; Iacono Manno, M.; Lanzalone, G.; Lanzano, G.; Lo Nigro, S.; Musumarra, A.; Pagano, A.; Papa, M.; Pirrone, S.; Politi, G.; Porto, F.; Rizzo, F.; Sambataro, S.; Sperduto, M.L.; Sutera, C.; Zetta, L.

    1997-01-01

    Prototypes of new passivated implanted planar silicon detectors, obtained for the first time from 6 in. silicon slices, have been tested. The time and energy resolutions have been studied as a function of the type and energy of the detected particles, in order to test the performances of these detectors for time of flight measurements in the Chimera project. Some problems arising from edge effects observed in double-pad detectors have been solved by using a guard ring. (orig.)

  14. Porous Silicon Structures as Optical Gas Sensors.

    Science.gov (United States)

    Levitsky, Igor A

    2015-08-14

    We present a short review of recent progress in the field of optical gas sensors based on porous silicon (PSi) and PSi composites, which are separate from PSi optochemical and biological sensors for a liquid medium. Different periodical and nonperiodical PSi photonic structures (bares, modified by functional groups or infiltrated with sensory polymers) are described for gas sensing with an emphasis on the device specificity, sensitivity and stability to the environment. Special attention is paid to multiparametric sensing and sensor array platforms as effective trends for the improvement of analyte classification and quantification. Mechanisms of gas physical and chemical sorption inside PSi mesopores and pores of PSi functional composites are discussed.

  15. arXiv Time resolution of silicon pixel sensors

    CERN Document Server

    Riegler, W.

    2017-11-21

    We derive expressions for the time resolution of silicon detectors, using the Landau theory and a PAI model for describing the charge deposit of high energy particles. First we use the centroid time of the induced signal and derive analytic expressions for the three components contributing to the time resolution, namely charge deposit fluctuations, noise and fluctuations of the signal shape due to weighting field variations. Then we derive expressions for the time resolution using leading edge discrimination of the signal for various electronics shaping times. Time resolution of silicon detectors with internal gain is discussed as well.

  16. Silicon microring refractometric sensor for atmospheric CO(2) gas monitoring.

    Science.gov (United States)

    Mi, Guangcan; Horvath, Cameron; Aktary, Mirwais; Van, Vien

    2016-01-25

    We report a silicon photonic refractometric CO(2) gas sensor operating at room temperature and capable of detecting CO(2) gas at atmospheric concentrations. The sensor uses a novel functional material layer based on a guanidine polymer derivative, which is shown to exhibit reversible refractive index change upon absorption and release of CO(2) gas molecules, and does not require the presence of humidity to operate. By functionalizing a silicon microring resonator with a thin layer of the polymer, we could detect CO(2) gas concentrations in the 0-500ppm range with a sensitivity of 6 × 10(-9) RIU/ppm and a detection limit of 20ppm. The microring transducer provides a potential integrated solution in the development of low-cost and compact CO(2) sensors that can be deployed as part of a sensor network for accurate environmental monitoring of greenhouse gases.

  17. 3D silicon sensors: Design, large area production and quality assurance for the ATLAS IBL pixel detector upgrade

    Science.gov (United States)

    Da Via, Cinzia; Boscardin, Maurizio; Dalla Betta, Gian-Franco; Darbo, Giovanni; Fleta, Celeste; Gemme, Claudia; Grenier, Philippe; Grinstein, Sebastian; Hansen, Thor-Erik; Hasi, Jasmine; Kenney, Chris; Kok, Angela; Parker, Sherwood; Pellegrini, Giulio; Vianello, Elisa; Zorzi, Nicola

    2012-12-01

    3D silicon sensors, where electrodes penetrate the silicon substrate fully or partially, have successfully been fabricated in different processing facilities in Europe and USA. The key to 3D fabrication is the use of plasma micro-machining to etch narrow deep vertical openings allowing dopants to be diffused in and form electrodes of pin junctions. Similar openings can be used at the sensor's edge to reduce the perimeter's dead volume to as low as ˜4 μm. Since 2009 four industrial partners of the 3D ATLAS R&D Collaboration started a joint effort aimed at one common design and compatible processing strategy for the production of 3D sensors for the LHC Upgrade and in particular for the ATLAS pixel Insertable B-Layer (IBL). In this project, aimed for installation in 2013, a new layer will be inserted as close as 3.4 cm from the proton beams inside the existing pixel layers of the ATLAS experiment. The detector proximity to the interaction point will therefore require new radiation hard technologies for both sensors and front end electronics. The latter, called FE-I4, is processed at IBM and is the biggest front end of this kind ever designed with a surface of ˜4 cm2. The performance of 3D devices from several wafers was evaluated before and after bump-bonding. Key design aspects, device fabrication plans and quality assurance tests during the 3D sensors prototyping phase are discussed in this paper.

  18. 3D silicon sensors: Design, large area production and quality assurance for the ATLAS IBL pixel detector upgrade

    Energy Technology Data Exchange (ETDEWEB)

    Da Via, Cinzia [School of Physics and Astronomy, University of Manchester, Oxford Road, Manchester, M13 9PL (United Kingdom); Boscardin, Maurizio [Fondazione Bruno Kessler, FBK-CMM, Via Sommarive 18, I-38123 Trento (Italy); Dalla Betta, Gian-Franco, E-mail: dallabe@disi.unitn.it [DISI, Universita degli Studi di Trento and INFN, Via Sommarive 14, I-38123 Trento (Italy); Darbo, Giovanni [INFN Sezione di Genova, Via Dodecaneso 33, I-14146 Genova (Italy); Fleta, Celeste [Centro Nacional de Microelectronica, CNM-IMB (CSIC), Barcelona E-08193 (Spain); Gemme, Claudia [INFN Sezione di Genova, Via Dodecaneso 33, I-14146 Genova (Italy); Grenier, Philippe [SLAC National Accelerator Laboratory, 2575 Sand Hill Road, Menlo Park, CA 94025 (United States); Grinstein, Sebastian [Institut de Fisica d' Altes Energies (IFAE) and ICREA, Universitat Autonoma de Barcelona (UAB), E-08193 Bellaterra, Barcelona (Spain); Hansen, Thor-Erik [SINTEF MiNaLab, Blindern, N-0314 Oslo (Norway); Hasi, Jasmine; Kenney, Chris [SLAC National Accelerator Laboratory, 2575 Sand Hill Road, Menlo Park, CA 94025 (United States); Kok, Angela [SINTEF MiNaLab, Blindern, N-0314 Oslo (Norway); Parker, Sherwood [University of Hawaii, c/o Lawrence Berkeley Laboratory, Berkeley, CA 94720 (United States); Pellegrini, Giulio [Centro Nacional de Microelectronica, CNM-IMB (CSIC), Barcelona E-08193 (Spain); Vianello, Elisa; Zorzi, Nicola [Fondazione Bruno Kessler, FBK-CMM, Via Sommarive 18, I-38123 Trento (Italy)

    2012-12-01

    3D silicon sensors, where electrodes penetrate the silicon substrate fully or partially, have successfully been fabricated in different processing facilities in Europe and USA. The key to 3D fabrication is the use of plasma micro-machining to etch narrow deep vertical openings allowing dopants to be diffused in and form electrodes of pin junctions. Similar openings can be used at the sensor's edge to reduce the perimeter's dead volume to as low as {approx}4 {mu}m. Since 2009 four industrial partners of the 3D ATLAS R and D Collaboration started a joint effort aimed at one common design and compatible processing strategy for the production of 3D sensors for the LHC Upgrade and in particular for the ATLAS pixel Insertable B-Layer (IBL). In this project, aimed for installation in 2013, a new layer will be inserted as close as 3.4 cm from the proton beams inside the existing pixel layers of the ATLAS experiment. The detector proximity to the interaction point will therefore require new radiation hard technologies for both sensors and front end electronics. The latter, called FE-I4, is processed at IBM and is the biggest front end of this kind ever designed with a surface of {approx}4 cm{sup 2}. The performance of 3D devices from several wafers was evaluated before and after bump-bonding. Key design aspects, device fabrication plans and quality assurance tests during the 3D sensors prototyping phase are discussed in this paper.

  19. Micro knife-edge optical measurement device in a silicon-on-insulator substrate.

    Science.gov (United States)

    Chiu, Yi; Pan, Jiun-Hung

    2007-05-14

    The knife-edge method is a commonly used technique to characterize the optical profiles of laser beams or focused spots. In this paper, we present a micro knife-edge scanner fabricated in a silicon-on-insulator substrate using the micro-electromechanical-system technology. A photo detector can be fabricated in the device to allow further integration with on-chip signal conditioning circuitry. A novel backside deep reactive ion etching process is proposed to solve the residual stress effect due to the buried oxide layer. Focused optical spot profile measurement is demonstrated.

  20. Quality assurance tests of the CBM silicon tracking system sensors with an infrared laser

    Energy Technology Data Exchange (ETDEWEB)

    Teklishyn, Maksym [FAIR GmbH, Darmstadt (Germany); KINR, Kyiv (Ukraine); Collaboration: CBM-Collaboration

    2016-07-01

    Double-sided 300 μm thick silicon microstrip sensors are planned to be used in the Silicon Tracking System (STS) of the future CBM experiment. Different tools, including an infrared laser, are used to induce charge in the sensor medium to study the sensor response. We use present installation to develop a procedure for the sensor quality assurance during mass production. The precise positioning of the laser spot allows to make a clear judgment about the sensor interstrip gap response which provides information about the charge distribution inside the sensor medium. Results are compared with the model estimations.

  1. Design and Tests of the Silicon Sensors for the ZEUS Micro Vertex Detector

    OpenAIRE

    Dannheim, D.; Koetz, U.; Coldewey, C.; Fretwurst, E.; Garfagnini, A.; Klanner, R.; Martens, J.; Koffeman, E.; Tiecke, H.; Carlin, R.

    2002-01-01

    To fully exploit the HERA-II upgrade,the ZEUS experiment has installed a Micro Vertex Detector (MVD) using n-type, single-sided, silicon micro-strip sensors with capacitive charge division. The sensors have a readout pitch of 120 micrometers, with five intermediate strips (20 micrometer strip pitch). The designs of the silicon sensors and of the test structures used to verify the technological parameters, are presented. Results on the electrical measurements are discussed. A total of 1123 sen...

  2. Advanced Packaging Technology Used in Fabricating a High-Temperature Silicon Carbide Pressure Sensor

    Science.gov (United States)

    Beheim, Glenn M.

    2003-01-01

    The development of new aircraft engines requires the measurement of pressures in hot areas such as the combustor and the final stages of the compressor. The needs of the aircraft engine industry are not fully met by commercially available high-temperature pressure sensors, which are fabricated using silicon. Kulite Semiconductor Products and the NASA Glenn Research Center have been working together to develop silicon carbide (SiC) pressure sensors for use at high temperatures. At temperatures above 850 F, silicon begins to lose its nearly ideal elastic properties, so the output of a silicon pressure sensor will drift. SiC, however, maintains its nearly ideal mechanical properties to extremely high temperatures. Given a suitable sensor material, a key to the development of a practical high-temperature pressure sensor is the package. A SiC pressure sensor capable of operating at 930 F was fabricated using a newly developed package. The durability of this sensor was demonstrated in an on-engine test. The SiC pressure sensor uses a SiC diaphragm, which is fabricated using deep reactive ion etching. SiC strain gauges on the surface of the diaphragm sense the pressure difference across the diaphragm. Conventionally, the SiC chip is mounted to the package with the strain gauges outward, which exposes the sensitive metal contacts on the chip to the hostile measurement environment. In the new Kulite leadless package, the SiC chip is flipped over so that the metal contacts are protected from oxidation by a hermetic seal around the perimeter of the chip. In the leadless package, a conductive glass provides the electrical connection between the pins of the package and the chip, which eliminates the fragile gold wires used previously. The durability of the leadless SiC pressure sensor was demonstrated when two 930 F sensors were tested in the combustor of a Pratt & Whitney PW4000 series engine. Since the gas temperatures in these locations reach 1200 to 1300 F, the sensors were

  3. CHARACTERIZATION OF A THIN SILICON SENSOR FOR ACTIVE NEUTRON PERSONAL DOSEMETERS.

    Science.gov (United States)

    Takada, M; Nunomiya, T; Nakamura, T; Matsumoto, T; Masuda, A

    2016-09-01

    A thin silicon sensor has been developed for active neutron personal dosemeters for use by aircrews and first responders. This thin silicon sensor is not affected by the funneling effect, which causes detection of cosmic protons and over-response to cosmic neutrons. There are several advantages to the thin silicon sensor: a decrease in sensitivity to gamma rays, an improvement of the energy detection limit for neutrons down to 0.8 MeV and an increase in the sensitivity to fast neutrons. Neutron response functions were experimentally obtained using 2.5 and 5 MeV monoenergy neutron beams and a (252)Cf neutron source. Simulation results using the Monte Carlo N-Particle transport code agree quite well with the experimental ones when an energy deposition region shaped like a circular truncated cone is used in place of a cylindrical region. © The Author 2016. Published by Oxford University Press. All rights reserved. For Permissions, please email: journals.permissions@oup.com.

  4. Investigation of the impact of mechanical stress on the properties of silicon sensor modules for the ATLAS Phase II upgrade

    Energy Technology Data Exchange (ETDEWEB)

    Stegler, Martin; Polay, Luise; Spehrlich, Dennis; Bloch, Ingo [DESY, Zeuthen (Germany)

    2016-07-01

    The new ATLAS tracker for phase II will be composed of silicon pixel and strip sensor modules. Such a module consists of silicon sensors, boards and readout chips. In a currently ongoing study new adhesives to connect the modular components thermally and mechanically are examined. It was shown that the silicon sensor is exposed to mechanical stress when part of a module. Mechanical stress can cause damage to a sensor and can change the tensors of electrical properties. The study of the effects of mechanical stress on characteristics of the silicon sensor modules are the focus in this presentation. The thermal induced tensile stress near to the surface of a silicon sensor build in a module was simulated. A four point bending setup was used to measure the maximum tensile stress of silicon and to verify the piezoresistive effect on ATLAS07 sensors. The results of the electrical measurements and simulations of stressed silicon sensor modules are shown in the presentation.

  5. Utility of silicone filtering for diffusive model CO2 sensors in field experiments

    Directory of Open Access Journals (Sweden)

    Shinjiro Ohkubo

    2013-05-01

    Full Text Available Installing a diffusive model CO2 sensor in the soil is a direct and useful method to observe the time variation of gas CO2 concentration in soil. Furthermore, it requires no bulky measurement system. A hydrophobic silicone filter prevents water infiltration. Therefore, a sensor whose detection element is covered with a silicone filter can be durable in the field even when experiencing inundation (e.g. farmland with snow melting, wetland with varying water level. The utility of a diffusive model of CO2 sensor covered with silicone filter was examined in laboratory and field experiments. Applying the silicone filter delays the response to change in ambient CO2 concentration, which results from lower gas permeability than those of other conventionally used filters made of materials, such as polytetrafluoroethylene. Theoretically, apart from the precision of the sensor itself, diurnal variation of soil gas CO2 concentration is calculable from obtained series of data with a silicone-covered sensor with negligible error. The error is estimated at approximately 1% of the diurnal amplitude in most cases of a 10-min logging interval. Drastic changes that occur, such as those of a rainfall event, cause a larger gap separating calculated and real values. However, the proportion of this gap to the extent of the drastic increase was extremely small (0.43% for a 10-min logging interval. For accurate estimation, a smoothly varied data series must be prepared as input data. Using a moving average or applying a fitting curve can be useful when using a sensor or data logger with low resolution. Estimating the gas permeability coefficient is crucial for calculation. The gas permeability coefficient can be estimated through laboratory experiments. This study revealed the possibility of evaluating the time variation of soil gas CO2 concentration by installing a diffusive model of silicone-covered sensor in an inundated field.

  6. Application of CMOS Technology to Silicon Photomultiplier Sensors

    Science.gov (United States)

    D’Ascenzo, Nicola; Zhang, Xi; Xie, Qingguo

    2017-01-01

    We use the 180 nm GLOBALFOUNDRIES (GF) BCDLite CMOS process for the production of a silicon photomultiplier prototype. We study the main characteristics of the developed sensor in comparison with commercial SiPMs obtained in custom technologies and other SiPMs developed with CMOS-compatible processes. We support our discussion with a transient modeling of the detection process of the silicon photomultiplier as well as with a series of static and dynamic experimental measurements in dark and illuminated environments. PMID:28946675

  7. Porous Silicon Structures as Optical Gas Sensors

    Directory of Open Access Journals (Sweden)

    Igor A. Levitsky

    2015-08-01

    Full Text Available We present a short review of recent progress in the field of optical gas sensors based on porous silicon (PSi and PSi composites, which are separate from PSi optochemical and biological sensors for a liquid medium. Different periodical and nonperiodical PSi photonic structures (bares, modified by functional groups or infiltrated with sensory polymers are described for gas sensing with an emphasis on the device specificity, sensitivity and stability to the environment. Special attention is paid to multiparametric sensing and sensor array platforms as effective trends for the improvement of analyte classification and quantification. Mechanisms of gas physical and chemical sorption inside PSi mesopores and pores of PSi functional composites are discussed.

  8. Measurement of delta-rays in ATLAS silicon sensors

    CERN Document Server

    The ATLAS collaboration

    2013-01-01

    In the inner detector of the ATLAS experiment at the LHC, $\\delta$-rays originating from particle interactions in the silicon sensors may cause additional hit channels. A method for identifying silicon hit clusters that are enlarged due to the emission of a $\\delta$-ray is presented. Using pp collision data the expectation is confirmed that the $\\delta$-ray production rate depends linearly on the path length of the particle in silicon, independently of layer radius and detector technology. The range of the $\\delta$-rays, which is a property of the material and should not depend on anything else, is indeed found to be constant as a function of detector layer, path length in silicon and momentum of the particle traversing the silicon. As a by-product of this analysis a method is proposed that could correct for the effect of these $\\delta$-rays, and this could be used to improve track reconstruction.

  9. Porous Silicon Hydrogen Sensor at Room Temperature: The Effect of Surface Modification and Noble Metal Contacts

    Directory of Open Access Journals (Sweden)

    Jayita KANUNGO

    2009-04-01

    Full Text Available Porous silicon (PS was fabricated by anodization of p-type crystalline silicon of resistivity 2-5 Ω cm. After formation, the PS surface was modified by the solution containing noble metal like Pd. Pd-Ag catalytic contact electrodes were deposited on porous silicon and on p-Silicon to fabricate Pd-Ag/PS/p-Si/Pd-Ag sensor structure to carry out the hydrogen sensing experiments. The Sensor was exposed to 1% hydrogen in nitrogen as carrier gas at room temperature (270C. Pd modified sensor showed minimum fluctuations and consistent performance with 86% response, response time and recovery time of 24 sec and 264 sec respectively. The stability experiments were studied for both unmodified and Pd modified sensor structures for a period of about 24 hours and the modified sensors showed excellent durability with no drift in response behavior.

  10. Radiation hard silicon sensors for the CMS tracker upgrade

    CERN Document Server

    Pohlsen, Thomas

    2013-01-01

    At an instantaneous luminosity of $5 \\times 10^{34}$ cm$^{-2}$ s$^{-1}$, the high-luminosity phase of the Large Hadron Collider (HL-LHC) is expected to deliver a total of $3\\,000$ fb$^{-1}$ of collisions, hereby increasing the discovery potential of the LHC experiments significantly. However, the radiation dose of the tracking systems will be severe, requiring new radiation hard sensors for the CMS tracker. The CMS tracker collaboration has initiated a large material investigation and irradiation campaign to identify the silicon material and design that fulfils all requirements for detectors for the HL-LHC. Focussing on the upgrade of the outer tracker region, pad sensors as well as fully functional strip sensors have been implemented on silicon wafers with different material properties and thicknesses. The samples were irradiated with a mixture of neutrons and protons corresponding to fluences as expected for the positions of detector layers in the future tracker. Different proton energies were used for irr...

  11. Investigation of silicon sensors for their use as antiproton annihilation detectors

    Energy Technology Data Exchange (ETDEWEB)

    Pacifico, N., E-mail: nicola.pacifico@cern.ch [University of Bergen, Institute of Physics and Technology, Allégaten 55, 5007 Bergen (Norway); Aghion, S. [Politecnico di Milano, Piazza Leonardo da Vinci 32, 20133 Milano (Italy); Istituto Nazionale di Fisica Nucleare, Sez. di Milano, Via Celoria 16, 20133 Milano (Italy); Ahlén, O. [European Organisation for Nuclear Research, Physics Department, 1211 Geneva 23 (Switzerland); Belov, A.S. [Institute for Nuclear Research of the Russian Academy of Sciences, Moscow 117312 (Russian Federation); Bonomi, G. [University of Brescia, Department of Mechanical and Industrial Engineering, Via Branze 38, 25133 Brescia (Italy); Istituto Nazionale di Fisica Nucleare, Sez. di Pavia, Via Agostino Bassi 6, 27100 Pavia (Italy); Bräunig, P. [Kirchhoff Institute for Physics, Im Neuenheimer Feld 227, 69120 Heidelberg (Germany); Bremer, J. [European Organisation for Nuclear Research, Physics Department, 1211 Geneva 23 (Switzerland); Brusa, R.S. [Department of Physics, University of Trento, via Sommarive 14, 38123 Povo, Trento (Italy); INFN-TIFPA, via Sommarive 14, 38123 Povo, Trento (Italy); Burghart, G. [European Organisation for Nuclear Research, Physics Department, 1211 Geneva 23 (Switzerland); Cabaret, L. [Laboratoire Aimé Cotton, CNRS, Université Paris Sud, ENS Cachan, Bâtiment 505, Campus d' Orsay, 91405 Orsay Cedex (France); Caccia, M. [University of Insubria, Dipartimento di Scienza ed Alta Tecnologia, via Valleggio 11, Como (Italy); Canali, C. [University of Zurich, Physics Institute, Winterthurerstrasse 190, 8057 Zurich (Switzerland); Caravita, R. [Istituto Nazionale di Fisica Nucleare, Sez. di Genova, Via Dodecaneso 33, 16146 Genova (Italy); University of Genoa, Department of Physics, Via Dodecaneso 33, 16146 Genova (Italy); Castelli, F. [University of Milano, Department of Physics, Via Celoria 16, 20133 Milano (Italy); and others

    2014-11-21

    We present here a new application of silicon sensors aimed at the direct detection of antinucleons annihilations taking place inside the sensor's volume. Such detectors are interesting particularly for the measurement of antimatter properties and will be used as part of the gravity measurement module in the AEg{sup ¯}IS experiment at the CERN Antiproton Decelerator. One of the goals of the AEg{sup ¯}IS experiment is to measure the gravitational acceleration of antihydrogen with 1% precision. Three different silicon sensor geometries have been tested with an antiproton beam to investigate their properties as annihilation detection devices: strip planar, 3D pixels and monolithic pixel planar. In all cases we were successfully detecting annihilations taking place in the sensor and we were able to make a first characterization of the clusters and tracks.

  12. Radiation hardness properties of full-3D active edge silicon sensors

    Czech Academy of Sciences Publication Activity Database

    Da Via, C.; Hasi, J.; Kenney, C.; Linhart, V.; Parker, S.; Slavíček, T.; Watts, S. J.; Bém, Pavel; Horažďovský, T.; Pospíšil, S.

    2008-01-01

    Roč. 587, 2-3 (2008), s. 243-249 ISSN 0168-9002 Institutional research plan: CEZ:AV0Z10480505 Keywords : silicon detectors * radiation hardness * 3D Subject RIV: BG - Nuclear, Atomic and Molecular Physics, Colliders Impact factor: 1.019, year: 2008

  13. Optical temperature sensor with enhanced sensitivity by employing hybrid waveguides in a silicon Mach-Zehnder interferometer

    DEFF Research Database (Denmark)

    Guan, Xiaowei; Wang, Xiaoyan; Frandsen, Lars Hagedorn

    2016-01-01

    We report on a novel design of an on-chip optical temperature sensor based on a Mach-Zehnder interferometer configuration where the two arms consist of hybrid waveguides providing opposite temperature-dependent phase changes to enhance the temperature sensitivity of the sensor. The sensitivity...... of the fabricated sensor with silicon/polymer hybrid waveguides is measured to be 172 pm/°C, which is two times larger than a conventional all-silicon optical temperature sensor (∼80 pm/°C). Moreover, a design with silicon/titanium dioxide hybrid waveguides is by calculation expected to have a sensitivity as high...

  14. Edge reconstruction effect in pristine and H-passivated zigzag silicon carbide nanoribbons.

    Science.gov (United States)

    Lou, Ping

    2011-10-14

    The edge reconstruction effect of the zigzag silicon carbide nanoribbons (zz SiC NRs) to a stable line of alternatively fused seven and five membered rings without and with H passivation have been studied using first principles density functional theory (DFT). The both side's edges of the pristine SiC are respectively terminated by Si and C atoms and are called the Si-edge and the C-edge, respectively. In the un-passivated systems, the C-edge reconstructed (Crc) could effectively lower the edge energy of the system, while the Si-edge reconstructed (Sirc) could raise the edge energy of the system. Thus, the Crc edge is the best edge for the edge reconstruction of the system, while the both edge reconstructed (brc) system is the metastability. Moreover, the brc system has a nonmagnetic metallic state, whereas the Crc system, as well as Sirc system, has a ferromagnetic metallic state. The edge reconstructed destroys the magnetic moment of the corresponding edge atoms. The magnetic moment arises from the unreconstructed zigzag edges. The pristine zz edge system has a ferrimagnetic metallic state. However, in the H-passivated systems, the unreconstructed zigzag edge (zz-H) is the best edge. The Crc-H system is the metastability. The Sirc-H system has only slightly higher energy than the Crc-H system, whereas the brc-H system of the pristine SiC NR has the highest edge energy. Thus, the H passivation would prevent the occurrence of edge reconstruction. Moreover, H passivation induces a metal-semiconductor transition in the zz and brc SiC NRs. Additionally, except for brc-H system which has non-magnetic semiconducting state, the zz-H, Crc-H, and Sirc-H systems have the magnetic state.

  15. Monolithic electrically injected nanowire array edge-emitting laser on (001) silicon

    KAUST Repository

    Frost, Thomas; Jahangir, Shafat; Stark, Ethan; Deshpande, Saniya; Hazari, Arnab Shashi; Zhao, Chao; Ooi, Boon S.; Bhattacharya, Pallab K.

    2014-01-01

    A silicon-based laser, preferably electrically pumped, has long been a scientific and engineering goal. We demonstrate here, for the first time, an edge-emitting InGaN/GaN disk-in-nanowire array electrically pumped laser emitting in the green (λ = 533 nm) on (001) silicon substrate. The devices display excellent dc and dynamic characteristics with values of threshold current density, differential gain, T0 and small signal modulation bandwidth equal to 1.76 kA/cm2, 3 × 10-17 cm2, 232 K, and 5.8 GHz respectively under continuous wave operation. Preliminary reliability measurements indicate a lifetime of 7000 h. The emission wavelength can be tuned by varying the alloy composition in the quantum disks. The monolithic nanowire laser on (001)Si can therefore address wide-ranging applications such as solid state lighting, displays, plastic fiber communication, medical diagnostics, and silicon photonics. © 2014 American Chemical Society.

  16. Monolithic electrically injected nanowire array edge-emitting laser on (001) silicon

    KAUST Repository

    Frost, Thomas

    2014-08-13

    A silicon-based laser, preferably electrically pumped, has long been a scientific and engineering goal. We demonstrate here, for the first time, an edge-emitting InGaN/GaN disk-in-nanowire array electrically pumped laser emitting in the green (λ = 533 nm) on (001) silicon substrate. The devices display excellent dc and dynamic characteristics with values of threshold current density, differential gain, T0 and small signal modulation bandwidth equal to 1.76 kA/cm2, 3 × 10-17 cm2, 232 K, and 5.8 GHz respectively under continuous wave operation. Preliminary reliability measurements indicate a lifetime of 7000 h. The emission wavelength can be tuned by varying the alloy composition in the quantum disks. The monolithic nanowire laser on (001)Si can therefore address wide-ranging applications such as solid state lighting, displays, plastic fiber communication, medical diagnostics, and silicon photonics. © 2014 American Chemical Society.

  17. Microtextured Silicon Surfaces for Detectors, Sensors & Photovoltaics

    Energy Technology Data Exchange (ETDEWEB)

    Carey, JE; Mazur, E

    2005-05-19

    With support from this award we studied a novel silicon microtexturing process and its application in silicon-based infrared photodetectors. By irradiating the surface of a silicon wafer with intense femtosecond laser pulses in the presence of certain gases or liquids, the originally shiny, flat surface is transformed into a dark array of microstructures. The resulting microtextured surface has near-unity absorption from near-ultraviolet to infrared wavelengths well below the band gap. The high, broad absorption of microtextured silicon could enable the production of silicon-based photodiodes for use as inexpensive, room-temperature multi-spectral photodetectors. Such detectors would find use in numerous applications including environmental sensors, solar energy, and infrared imaging. The goals of this study were to learn about microtextured surfaces and then develop and test prototype silicon detectors for the visible and infrared. We were extremely successful in achieving our goals. During the first two years of this award, we learned a great deal about how microtextured surfaces form and what leads to their remarkable optical properties. We used this knowledge to build prototype detectors with high sensitivity in both the visible and in the near-infrared. We obtained room-temperature responsivities as high as 100 A/W at 1064 nm, two orders of magnitude higher than standard silicon photodiodes. For wavelengths below the band gap, we obtained responsivities as high as 50 mA/W at 1330 nm and 35 mA/W at 1550 nm, close to the responsivity of InGaAs photodiodes and five orders of magnitude higher than silicon devices in this wavelength region.

  18. 16 CFR 1211.12 - Requirements for edge sensors.

    Science.gov (United States)

    2010-01-01

    ... Section 1211.12 Commercial Practices CONSUMER PRODUCT SAFETY COMMISSION CONSUMER PRODUCT SAFETY ACT... that the axis is perpendicular to the plane of the door. For an edge sensor intended to be used on a... direction perpendicular to the plane of the door. See figure 6. (2) With respect to the test of paragraph (a...

  19. Sensors and sensor integration; Proceedings of the Meeting, Orlando, FL, Apr. 4, 1991

    Science.gov (United States)

    Dean, Peter D.

    Consideration is given to adaptive control of propellant slosh for launch vehicles, a lidar for expendable launch vehicles, a high-resolution airborne multisensor system, an optical velocity sensor for air data applications, and use of absorption spectroscopy for refined petroleum product discrimination. Attention is also given to edge effects in silicon photodiode arrays, sensing and environment perception for a mobile vehicle, distributed-effect optical fiber sensors for trusses and plates, and instrumentation concepts for multiplexed Bragg grating sensors. (For individual items see A93-21962 to A93-21972)

  20. Quality assurance of the silicon microstrip sensors for the CBM experiment

    Energy Technology Data Exchange (ETDEWEB)

    Panasenko, Iaroslav [Physikalisches Institut, Universitaet Tuebingen (Germany); Institute for Nuclear Research, Kiev (Ukraine); Larionov, Pavel [University of Frankfurt (Germany); Collaboration: CBM-Collaboration

    2016-07-01

    The CBM experiment at FAIR will investigate the properties of nuclear matter at extreme conditions created in ultrarelativistic heavy-ion collisions. Its core detector - the Silicon Tracking System (STS) - will determine the momentum of charged particles from beam-target interactions. The track multiplicity will reach up to 700 within the detector aperture covering the polar angle 2.5 and 25 . High track density as well as stringent requirements to the momentum resolution (∝1%) require a system with high channel granularity and low material budget. The STS will be constructed of about 1200 double-sided silicon microstrip sensors with 58 μm pitch and a total area of ∝4 m{sup 2} with all together 2.1 million channels will be read out. In this talk the quality assurance of double-sided silicon microstrip sensors is discussed. This includes both visual and electrical characterization. For this purpose dedicated equipment has been set up in the clean rooms of the GSI Detector Laboratory and at Tuebingen University. Results of the electrical characterization of prototype microstrip sensors CBM06 are presented.

  1. Piezoresistive silicon pressure sensors in cryogenic environment

    Science.gov (United States)

    Kahng, Seun K.; Chapman, John J.

    1989-01-01

    This paper presents data on low-temperature measurements of silicon pressure sensors. It was found that both the piezoresistance coefficients and the charge-carrier mobility increase with decreasing temperature. For lightly doped semiconductor materials, the density of free charge carriers decreases with temperature and can freeze out eventually. However, the effect of carrier freeze-out can be minimized by increasing the impurity content to higher levels, at which the temperature dependency of piezoresistance coefficients is reduced. An impurity density of 1 x 10 to the 19th/cu cm was found to be optimal for cryogenic applications of pressure sensor dies.

  2. The silicon microstrip sensors of the ATLAS semiconductor tracker

    Energy Technology Data Exchange (ETDEWEB)

    ATLAS SCT Collaboration; Spieler, Helmuth G.

    2007-04-13

    This paper describes the AC-coupled, single-sided, p-in-n silicon microstrip sensors used in the Semiconductor Tracker (SCT) of the ATLAS experiment at the CERN Large Hadron Collider (LHC). The sensor requirements, specifications and designs are discussed, together with the qualification and quality assurance procedures adopted for their production. The measured sensor performance is presented, both initially and after irradiation to the fluence anticipated after 10 years of LHC operation. The sensors are now successfully assembled within the detecting modules of the SCT, and the SCT tracker is completed and integrated within the ATLAS Inner Detector. Hamamatsu Photonics Ltd. supplied 92.2percent of the 15,392 installed sensors, with the remainder supplied by CiS.

  3. The silicon microstrip sensors of the ATLAS semiconductor tracker

    International Nuclear Information System (INIS)

    ATLAS SCT Collaboration; Spieler, Helmuth G.

    2007-01-01

    This paper describes the AC-coupled, single-sided, p-in-n silicon microstrip sensors used in the Semiconductor Tracker (SCT) of the ATLAS experiment at the CERN Large Hadron Collider (LHC). The sensor requirements, specifications and designs are discussed, together with the qualification and quality assurance procedures adopted for their production. The measured sensor performance is presented, both initially and after irradiation to the fluence anticipated after 10 years of LHC operation. The sensors are now successfully assembled within the detecting modules of the SCT, and the SCT tracker is completed and integrated within the ATLAS Inner Detector. Hamamatsu Photonics Ltd. supplied 92.2percent of the 15,392 installed sensors, with the remainder supplied by CiS

  4. Obtaining porous silicon suitable for sensor technology using MacEtch nonelectrolytic etching

    Directory of Open Access Journals (Sweden)

    Iatsunskyi I. R.

    2013-12-01

    Full Text Available The author suggests to use the etching method MacEtch (metal-assisted chemical etching for production of micro- and nanostructures of porous silicon. The paper presents research results on the morphology structures obtained at different parameters of deposition and etching processes. The research has shown that, depending on the parameters of deposition of silver particles and silicon wafers etching, the obtained surface morphology may be different. There may be both individual crater-like pores and developed porous or macroporous surface. These results indicate that the MacEtch etching is a promising method for obtaining micro-porous silicon nanostructures suitable for effective use in gas sensors and biological object sensors.

  5. Systematic irradiation studies and quality assurance of silicon strip sensors for the CBM Silicon Tracking System

    International Nuclear Information System (INIS)

    Larionov, Pavel

    2016-10-01

    The Compressed Baryonic Matter (CBM) experiment at the upcoming Facility for Antiproton and Ion Research (FAIR) is designed to investigate the phase diagram of strongly interacting matter at neutron star core densities under laboratory conditions. This work is a contribution to the development of the main tracking detector of the CBM experiment - the Silicon Tracking System (STS), designed to provide the tracking and the momentum information for charged particles in a high multiplicity environment. The STS will be composed of about 900 highly segmented double-sided silicon strip sensors and is expected to face a harsh radiation environment up to 1 x 10 14 cm -2 in 1 MeV neutron equivalent fluence after several years of operation. The two most limiting factors of the successful operation of the system are the radiation damage and the quality of produced silicon sensors. It is therefore of importance to ensure both the radiation tolerance of the STS sensors and their quality during the production phase. The first part of this work details the investigation of the radiation tolerance of the STS sensors. Series of irradiations of miniature sensors as well as full-size prototype sensors were performed with reactor neutrons and 23 MeV protons to a broad range of fluences, up to 2 x 10 14 n eq /cm 2 . The evolution of the main sensor characteristics (leakage current, full depletion voltage and charge collection) was extensively studied both as a function of accumulated fluence and time after irradiation. In particular, charge collection measurements of miniature sensors demonstrated the ability of the sensors to yield approx. 90% to 95% of the signal after irradiation up to the lifetime fluence, depending on the readout side. First results on the charge collection performance of irradiated full-size prototype sensors have been obtained, serving as an input data for further final signal-to-noise evaluation in the whole readout chain. Operational stability of these

  6. Signals from fluorescent materials on the surface of silicon micro-strip sensors

    CERN Document Server

    Sperlich, Dennis; The ATLAS collaboration

    2018-01-01

    For the High-Luminosity Upgrade of the Large Hadron Collider at CERN, the ATLAS Inner Detector will be replaced with a new, all-silicon tracker (ITk). In order to minimise the amount of material in the ITk, circuit boards with readout electronics will be glued onto the active area of the sensor. Several adhesives, investigated to be used for the construction of detector modules, were found to become fluorescent when exposed to UV light. These adhesives could become a light source in the high-radiation environment of the ATLAS detector. The effect of fluorescent material covering the sensor surface in a high-radiation environment has been studied for a silicon micro-strip sensor using a micro-focused X-ray beam. By positioning the beam parallel to the sensor surfave and pointing it both inside the sensor and above the sensor surface inside the deposited glue, the sensor responses from direct hits and fluorescence can be compared with high precision. This contribution presents a setup to study the susceptibilit...

  7. Low-Power Silicon-based Thermal Sensors and Actuators for Chemical Applications

    NARCIS (Netherlands)

    Vereshchagina, E.

    2011-01-01

    In the Hot Silicon project low and ultra-low-power Si-based hot surface devices have been developed, i.e. thermal sensors and actuators, for application in catalytic gas micro sensors, micro- and nano- calorimeters. This work include several scientific and technological aspects: • Design and

  8. Towards Development of Microcalorimeter Arrays of Mo/Au Transition-Edge Sensors with Bismuth Absorbers

    Science.gov (United States)

    Tralshawala, Nilesh; Brekosky, Regis; Figueroa-Feliciano, Enectali; Li, Mary; Stahle, Carl; Stahle, Caroline

    2000-01-01

    We report on our progress towards the development of arrays of X-ray microcalorimeters as candidates for the high resolution x-ray spectrometer on the Constellation-X mission. The microcalorimeter arrays (30 x 30) with appropriate pixel sizes (0.25 mm. x 0.25 mm) and high packing fractions (greater than 96%) are being developed. Each individual pixel has a 10 micron thick Bi X-ray absorber that is shaped like a mushroom to increase the packing fraction, and a Mo/Au proximity effect superconducting transition edge sensor (TES). These are deposited on a 0.25 or 0.5 micron thick silicon nitride membrane with slits to provide a controllable weak thermal link to the sink temperature. Studies are underway to model, test and optimize the TES pixel uniformity, critical current, heat capacity and the membrane thermal conductance in the array structure. Fabrication issues and procedures, and results of our efforts based on these optimizations will be provided.

  9. SIMULATED 8 MeV NEUTRON RESPONSE FUNCTIONS OF A THIN SILICON NEUTRON SENSOR.

    Science.gov (United States)

    Takada, Masashi; Matsumoto, Tetsuro; Masuda, Akihiko; Nunomiya, Tomoya; Aoyama, Kei; Nakamura, Takashi

    2017-12-22

    Neutron response functions of a thin silicon neutron sensor are simulated using PHITS2 and MCNP6 codes for an 8 MeV neutron beam at angles of incidence of 0°, 30° and 60°. The contributions of alpha particles created from the 28Si(n,α)25Mg reaction and the silicon nuclei scattered elastically by neutrons in the silicon sensor have not been well reproduced using the MCNP6 code. The 8 MeV neutron response functions simulated using the PHITS2 code with an accurate event generator mode are in good agreement with experimental results and include the contributions of the alpha particles and silicon nuclei. © The Author(s) 2017. Published by Oxford University Press. All rights reserved. For Permissions, please email: journals.permissions@oup.com.

  10. Real-Time and In-Flow Sensing Using a High Sensitivity Porous Silicon Microcavity-Based Sensor.

    Science.gov (United States)

    Caroselli, Raffaele; Martín Sánchez, David; Ponce Alcántara, Salvador; Prats Quilez, Francisco; Torrijos Morán, Luis; García-Rupérez, Jaime

    2017-12-05

    Porous silicon seems to be an appropriate material platform for the development of high-sensitivity and low-cost optical sensors, as their porous nature increases the interaction with the target substances, and their fabrication process is very simple and inexpensive. In this paper, we present the experimental development of a porous silicon microcavity sensor and its use for real-time in-flow sensing application. A high-sensitivity configuration was designed and then fabricated, by electrochemically etching a silicon wafer. Refractive index sensing experiments were realized by flowing several dilutions with decreasing refractive indices, and measuring the spectral shift in real-time. The porous silicon microcavity sensor showed a very linear response over a wide refractive index range, with a sensitivity around 1000 nm/refractive index unit (RIU), which allowed us to directly detect refractive index variations in the 10 -7 RIU range.

  11. Transparent silicon strip sensors for the optical alignment of particle detector systems

    International Nuclear Information System (INIS)

    Blum, W.; Kroha, H.; Widmann, P.

    1995-05-01

    Modern large-area precision tracking detectors require increasing accuracy for the alignment of their components. A novel multi-point laser alignment system has been developed for such applications. The position of detector components with respect to reference laser beams is monitored by semi-transparent optical position sensors which work on the principle of silicon strip photodiodes. Two types of custom designed transparent strip sensors, based on crystalline and on amorphous silicon as active material, have been studied. The sensors are optimised for the typical diameters of collimated laser beams of 3-5 mm over distances of 10-20 m. They provide very high position resolution, on the order of 1 μm, uniformly over a wide measurement range of several centimeters. The preparation of the sensor surfaces requires special attention in order to achieve high light transmittance and minimum distortion of the traversing laser beams. At selected wavelengths, produced by laser diodes, transmission rates above 90% have been achieved. This allows to position more than 30 sensors along one laser beam. The sensors will be equipped with custom designed integrated readout electronics. (orig.)

  12. A VDF/TrFE copolymer on silicon pyroelectric sensor: design considerations and experiments

    NARCIS (Netherlands)

    Setiadi, D.; Setiadi, D.; Regtien, Paulus P.L.

    1995-01-01

    For an optimal design of a VDF/TrFE (vinylidene fluoride trifluoroethylene) copolymer-on-silicon pyroelectric sensor, the one-dimensional diffusion equation is solved for the pyroelectric multilayer structure. Output current and voltage of the sensor are calculated. Improvement of the sensor can be

  13. Systematic irradiation studies and quality assurance of silicon strip sensors for the CBM Silicon Tracking System

    Energy Technology Data Exchange (ETDEWEB)

    Larionov, Pavel

    2016-10-15

    The Compressed Baryonic Matter (CBM) experiment at the upcoming Facility for Antiproton and Ion Research (FAIR) is designed to investigate the phase diagram of strongly interacting matter at neutron star core densities under laboratory conditions. This work is a contribution to the development of the main tracking detector of the CBM experiment - the Silicon Tracking System (STS), designed to provide the tracking and the momentum information for charged particles in a high multiplicity environment. The STS will be composed of about 900 highly segmented double-sided silicon strip sensors and is expected to face a harsh radiation environment up to 1 x 10{sup 14} cm{sup -2} in 1 MeV neutron equivalent fluence after several years of operation. The two most limiting factors of the successful operation of the system are the radiation damage and the quality of produced silicon sensors. It is therefore of importance to ensure both the radiation tolerance of the STS sensors and their quality during the production phase. The first part of this work details the investigation of the radiation tolerance of the STS sensors. Series of irradiations of miniature sensors as well as full-size prototype sensors were performed with reactor neutrons and 23 MeV protons to a broad range of fluences, up to 2 x 10{sup 14} n{sub eq}/cm{sup 2}. The evolution of the main sensor characteristics (leakage current, full depletion voltage and charge collection) was extensively studied both as a function of accumulated fluence and time after irradiation. In particular, charge collection measurements of miniature sensors demonstrated the ability of the sensors to yield approx. 90% to 95% of the signal after irradiation up to the lifetime fluence, depending on the readout side. First results on the charge collection performance of irradiated full-size prototype sensors have been obtained, serving as an input data for further final signal-to-noise evaluation in the whole readout chain. Operational

  14. A facile fluorescent sensor based on silicon nanowires for dithionite

    Science.gov (United States)

    Cao, Xingxing; Mu, Lixuan; Chen, Min; She, Guangwei

    2018-05-01

    A facile and novel fluorescent sensor for dithionite has been constructed by simultaneously immobilizing dansyl group (fluorescence molecule) and dabsyl group (quencher and recognizing group) on the silicon nanowires (SiNWs) and SiNW arrays surface. This sensor for dithionite exhibited high selectivity and a good relationship of linearity between fluorescence intensities and dithionite concentrations from 0.1 to 1 mM. This approach is straightforward and does not require complicated synthesis, which can be extended to develop other sensors with similar rationale.

  15. First thin AC-coupled silicon strip sensors on 8-inch wafers

    Energy Technology Data Exchange (ETDEWEB)

    Bergauer, T., E-mail: thomas.bergauer@oeaw.ac.at [Institute of High Energy Physics of the Austrian Academy of Sciences, Nikolsdorfer Gasse 18, 1050 Wien (Vienna) (Austria); Dragicevic, M.; König, A. [Institute of High Energy Physics of the Austrian Academy of Sciences, Nikolsdorfer Gasse 18, 1050 Wien (Vienna) (Austria); Hacker, J.; Bartl, U. [Infineon Technologies Austria AG, Siemensstrasse 2, 9500 Villach (Austria)

    2016-09-11

    The Institute of High Energy Physics (HEPHY) in Vienna and the semiconductor manufacturer Infineon Technologies Austria AG developed a production process for planar AC-coupled silicon strip sensors manufactured on 200 μm thick 8-inch p-type wafers. In late 2015, the first wafers were delivered featuring the world's largest AC-coupled silicon strip sensors. Detailed electrical measurements were carried out at HEPHY, where single strip and global parameters were measured. Mechanical studies were conducted and the long-term behavior was investigated using a climate chamber. Furthermore, the electrical properties of various test structures were investigated to validate the quality of the manufacturing process.

  16. Front-side biasing of n-in-p silicon strip detectors

    CERN Document Server

    Baselga Bacardit, Marta; Dierlamm, Alexander Hermann; Dragicevic, Marko Gerhart; Konig, Axel; Pree, Elias; Metzler, Marius

    2018-01-01

    Front-side biasing is an alternative method to bias a silicon sensor. Instead of directly applying high voltage to the back-side, one can exploit the conductive properties of the edge region to bias a detector exclusively via top-side connections. This option can be beneficial for the detector design and might help to facilitate the assembly process of modules. The effective bias voltage is affected by the resistance of the edge region and the sensor current. The measurements of n-in-p sensors performed to qualify this concept have shown that the voltage drop emerging from this resistance is negligible before irradiation. After irradiation, however, the resistivity of the edge region increases with fluence and saturates in the region of 10$^{7}\\,\\Omega$ at a fluence of 1$\\,\\cdot\\,10^{15}\\,$n$_{\\textrm{eq}}$cm$^{-2}$. The measurements are complemented by TCAD simulations and interpretations of the observed effects.

  17. Fiber-chip edge coupler with large mode size for silicon photonic wire waveguides.

    Science.gov (United States)

    Papes, Martin; Cheben, Pavel; Benedikovic, Daniel; Schmid, Jens H; Pond, James; Halir, Robert; Ortega-Moñux, Alejandro; Wangüemert-Pérez, Gonzalo; Ye, Winnie N; Xu, Dan-Xia; Janz, Siegfried; Dado, Milan; Vašinek, Vladimír

    2016-03-07

    Fiber-chip edge couplers are extensively used in integrated optics for coupling of light between planar waveguide circuits and optical fibers. In this work, we report on a new fiber-chip edge coupler concept with large mode size for silicon photonic wire waveguides. The coupler allows direct coupling with conventional cleaved optical fibers with large mode size while circumventing the need for lensed fibers. The coupler is designed for 220 nm silicon-on-insulator (SOI) platform. It exhibits an overall coupling efficiency exceeding 90%, as independently confirmed by 3D Finite-Difference Time-Domain (FDTD) and fully vectorial 3D Eigenmode Expansion (EME) calculations. We present two specific coupler designs, namely for a high numerical aperture single mode optical fiber with 6 µm mode field diameter (MFD) and a standard SMF-28 fiber with 10.4 µm MFD. An important advantage of our coupler concept is the ability to expand the mode at the chip edge without leading to high substrate leakage losses through buried oxide (BOX), which in our design is set to 3 µm. This remarkable feature is achieved by implementing in the SiO 2 upper cladding thin high-index Si 3 N 4 layers. The Si 3 N 4 layers increase the effective refractive index of the upper cladding near the facet. The index is controlled along the taper by subwavelength refractive index engineering to facilitate adiabatic mode transformation to the silicon wire waveguide while the Si-wire waveguide is inversely tapered along the coupler. The mode overlap optimization at the chip facet is carried out with a full vectorial mode solver. The mode transformation along the coupler is studied using 3D-FDTD simulations and with fully-vectorial 3D-EME calculations. The couplers are optimized for operating with transverse electric (TE) polarization and the operating wavelength is centered at 1.55 µm.

  18. Sensitivity encoded silicon photomultiplier—a new sensor for high-resolution PET-MRI

    International Nuclear Information System (INIS)

    Schulz, Volkmar; Berker, Yannick; Berneking, Arne; Omidvari, Negar; Kiessling, Fabian; Gola, Alberto; Piemonte, Claudio

    2013-01-01

    Detectors for simultaneous positron emission tomography and magnetic resonance imaging in particular with sub-mm spatial resolution are commonly composed of scintillator crystal arrays, readout via arrays of solid state sensors, such as avalanche photo diodes (APDs) or silicon photomultipliers (SiPMs). Usually a light guide between the crystals and the sensor is used to enable the identification of crystals which are smaller than the sensor elements. However, this complicates crystal identification at the gaps and edges of the sensor arrays. A solution is to use as many sensors as crystals with a direct coupling, which unfortunately increases the complexity and power consumption of the readout electronics. Since 1997, position-sensitive APDs have been successfully used to identify sub-mm crystals. Unfortunately, these devices show a limitation in their time resolution and a degradation of spatial resolution when placed in higher magnetic fields. To overcome these limitations, this paper presents a new sensor concept that extends conventional SiPMs by adding position information via the spatial encoding of the channel sensitivity. The concept allows a direct coupling of high-resolution crystal arrays to the sensor with a reduced amount of readout channels. The theory of sensitivity encoding is detailed and linked to compressed sensing to compute unique sparse solutions. Two devices have been designed using one- and two-dimensional linear sensitivity encoding with eight and four readout channels, respectively. Flood histograms of both devices show the capability to precisely identify all 4 × 4 LYSO crystals with dimensions of 0.93 × 0.93 × 10 mm 3 . For these crystals, the energy and time resolution (MV ± SD) of the devices with one (two)-dimensional encoding have been measured to be 12.3 · (1 ± 0.047)% (13.7 · (1 ± 0.047)%) around 511 keV with a paired coincidence time resolution (full width at half maximum) of 462 · (1 ± 0.054) ps (452 · (1 ± 0

  19. Sensitivity encoded silicon photomultiplier—a new sensor for high-resolution PET-MRI

    Science.gov (United States)

    Schulz, Volkmar; Berker, Yannick; Berneking, Arne; Omidvari, Negar; Kiessling, Fabian; Gola, Alberto; Piemonte, Claudio

    2013-07-01

    Detectors for simultaneous positron emission tomography and magnetic resonance imaging in particular with sub-mm spatial resolution are commonly composed of scintillator crystal arrays, readout via arrays of solid state sensors, such as avalanche photo diodes (APDs) or silicon photomultipliers (SiPMs). Usually a light guide between the crystals and the sensor is used to enable the identification of crystals which are smaller than the sensor elements. However, this complicates crystal identification at the gaps and edges of the sensor arrays. A solution is to use as many sensors as crystals with a direct coupling, which unfortunately increases the complexity and power consumption of the readout electronics. Since 1997, position-sensitive APDs have been successfully used to identify sub-mm crystals. Unfortunately, these devices show a limitation in their time resolution and a degradation of spatial resolution when placed in higher magnetic fields. To overcome these limitations, this paper presents a new sensor concept that extends conventional SiPMs by adding position information via the spatial encoding of the channel sensitivity. The concept allows a direct coupling of high-resolution crystal arrays to the sensor with a reduced amount of readout channels. The theory of sensitivity encoding is detailed and linked to compressed sensing to compute unique sparse solutions. Two devices have been designed using one- and two-dimensional linear sensitivity encoding with eight and four readout channels, respectively. Flood histograms of both devices show the capability to precisely identify all 4 × 4 LYSO crystals with dimensions of 0.93 × 0.93 × 10 mm3. For these crystals, the energy and time resolution (MV ± SD) of the devices with one (two)-dimensional encoding have been measured to be 12.3 · (1 ± 0.047)% (13.7 · (1 ± 0.047)%) around 511 keV with a paired coincidence time resolution (full width at half maximum) of 462 · (1 ± 0.054) ps (452 · (1 ± 0

  20. Sensitivity encoded silicon photomultiplier--a new sensor for high-resolution PET-MRI.

    Science.gov (United States)

    Schulz, Volkmar; Berker, Yannick; Berneking, Arne; Omidvari, Negar; Kiessling, Fabian; Gola, Alberto; Piemonte, Claudio

    2013-07-21

    Detectors for simultaneous positron emission tomography and magnetic resonance imaging in particular with sub-mm spatial resolution are commonly composed of scintillator crystal arrays, readout via arrays of solid state sensors, such as avalanche photo diodes (APDs) or silicon photomultipliers (SiPMs). Usually a light guide between the crystals and the sensor is used to enable the identification of crystals which are smaller than the sensor elements. However, this complicates crystal identification at the gaps and edges of the sensor arrays. A solution is to use as many sensors as crystals with a direct coupling, which unfortunately increases the complexity and power consumption of the readout electronics. Since 1997, position-sensitive APDs have been successfully used to identify sub-mm crystals. Unfortunately, these devices show a limitation in their time resolution and a degradation of spatial resolution when placed in higher magnetic fields. To overcome these limitations, this paper presents a new sensor concept that extends conventional SiPMs by adding position information via the spatial encoding of the channel sensitivity. The concept allows a direct coupling of high-resolution crystal arrays to the sensor with a reduced amount of readout channels. The theory of sensitivity encoding is detailed and linked to compressed sensing to compute unique sparse solutions. Two devices have been designed using one- and two-dimensional linear sensitivity encoding with eight and four readout channels, respectively. Flood histograms of both devices show the capability to precisely identify all 4 × 4 LYSO crystals with dimensions of 0.93 × 0.93 × 10 mm(3). For these crystals, the energy and time resolution (MV ± SD) of the devices with one (two)-dimensional encoding have been measured to be 12.3 · (1 ± 0.047)% (13.7 · (1 ± 0.047)%) around 511 keV with a paired coincidence time resolution (full width at half maximum) of 462 · (1 ± 0.054) ps (452 · (1 ± 0

  1. Signal formation and active edge studies of 3D silicon detector technology

    CERN Document Server

    Kok, Angela

    3D detectors and devices with an ‘active edge’ were fabricated at the Stanford Nanofabrication Facility. Characteristics such as time response and edge sensitivity were studied. The induced signals from a 3D detector were studied using a fast, low-noise transimpedance amplifier. The rise time of the output signal obtained for a minimum ionising particle was faster than 4 ns at room temperature and 2 ns at 130K. This is in agreement with earlier calculations of 3D detectors that predicted the charge collection time to be between one to two ns. The first understanding of signal formation in a 3D detector was achieved by comparing measurements with a full system simulation. The differences in collection behaviour between electrons and holes were also understood and verified by measurement. Edge sensitivity was measured at the CERN SPS, using a high energy muon beam and a silicon telescope. The detector was measured to be efficient up to less than 4 μm from its physical edge. This confirmed that active edge ...

  2. Signal development in silicon sensors used for radiation detection

    Energy Technology Data Exchange (ETDEWEB)

    Becker, Julian

    2010-08-15

    This work investigates the charge collection properties in silicon sensors. In order to perform the investigations a setup for measurements utilizing the Transient Current Technique (TCT) has been designed and built. Optical lasers with different wavelengths and short pulses (FWHM<100 ps) have been used to create charge carriers in the sensor volume. A new parameterization of charge carrier mobilities in bulk silicon as function of electric field and temperature was derived for two different crystal orientations from investigations on pad sensors with low charge carrier densities. In the course of these investigations a simulation program for current pulses was developed. The program simulates current pulses, which are induced by drift and diffusion of charge carriers for pad sensors, and approximately for strip and pixel sensors. The simulation program could be used to describe the current pulses of irradiated sensors. Additionally, using the simulation program, it was shown that impact ionization is a possible reason for the recently reported charge multiplication effects in highly irradiated sensors. The central topic of this work is the investigation of effects of high charge carrier densities, so called plasma effects. In this work plasma effects were created by focusing the lasers. The measurements of the plasma efffects on pad sensors were used as reference measurements for simulations performed by WIAS in Berlin. It was shown that using charge transport models accepted in literature, the observed plasma effects cannot be described. Measurements on strip sensors were performed with regards to the detector development for the European XFEL. Measurements of peak currents and charge collection times as function of photon intensity and applied bias voltage allowed the determination of optimum operation parameters of the Adaptive Gain Integration Pixel Detector (AGIPD), which will be used at the European XFEL. Utilizing position sensitive measurements on strip

  3. Signal development in silicon sensors used for radiation detection

    International Nuclear Information System (INIS)

    Becker, Julian

    2010-08-01

    This work investigates the charge collection properties in silicon sensors. In order to perform the investigations a setup for measurements utilizing the Transient Current Technique (TCT) has been designed and built. Optical lasers with different wavelengths and short pulses (FWHM<100 ps) have been used to create charge carriers in the sensor volume. A new parameterization of charge carrier mobilities in bulk silicon as function of electric field and temperature was derived for two different crystal orientations from investigations on pad sensors with low charge carrier densities. In the course of these investigations a simulation program for current pulses was developed. The program simulates current pulses, which are induced by drift and diffusion of charge carriers for pad sensors, and approximately for strip and pixel sensors. The simulation program could be used to describe the current pulses of irradiated sensors. Additionally, using the simulation program, it was shown that impact ionization is a possible reason for the recently reported charge multiplication effects in highly irradiated sensors. The central topic of this work is the investigation of effects of high charge carrier densities, so called plasma effects. In this work plasma effects were created by focusing the lasers. The measurements of the plasma efffects on pad sensors were used as reference measurements for simulations performed by WIAS in Berlin. It was shown that using charge transport models accepted in literature, the observed plasma effects cannot be described. Measurements on strip sensors were performed with regards to the detector development for the European XFEL. Measurements of peak currents and charge collection times as function of photon intensity and applied bias voltage allowed the determination of optimum operation parameters of the Adaptive Gain Integration Pixel Detector (AGIPD), which will be used at the European XFEL. Utilizing position sensitive measurements on strip

  4. Characterization of silicon microstrip sensors with a pulsed infrared laser system for the CBM experiment at FAIR

    Energy Technology Data Exchange (ETDEWEB)

    Ghosh, Pradeep [Goethe Univ., Frankfurt (Germany); GSI (Germany); Eschke, Juergen [GSI (Germany); FAIR (Germany); Collaboration: CBM-Collaboration

    2014-07-01

    The Silicon Tracking System (STS) for the Compressed Baryonic Matter (CBM) experiment at FAIR will comprise more than 1200 double-sided silicon microstrip sensors. For the quality assurance of the prototype sensors a laser test system has been built up. The aim of the sensor scans with the pulsed infrared laser system is to determine the charge sharing between strips and to measure the uniformity of the sensor response over the whole active area. The laser system measures the sensor response in an automatized procedure at several thousand positions across the sensor with focused infrared laser light (σ∼15 μm, λ=1060 nm). The duration (5 ns) and power (few mW) of the laser pulses are selected such, that the absorption of the laser light in the 300 μm thick silicon sensors produces a number of about 24k electrons, which is similar to the charge created by minimum ionizing particles in these sensors. Results from the characterization of monolithic active pixel sensors, to understand the spot-size of the laser, and laser scans for different sensors are presented.

  5. Real-Time and In-Flow Sensing Using a High Sensitivity Porous Silicon Microcavity-Based Sensor

    Directory of Open Access Journals (Sweden)

    Raffaele Caroselli

    2017-12-01

    Full Text Available Porous silicon seems to be an appropriate material platform for the development of high-sensitivity and low-cost optical sensors, as their porous nature increases the interaction with the target substances, and their fabrication process is very simple and inexpensive. In this paper, we present the experimental development of a porous silicon microcavity sensor and its use for real-time in-flow sensing application. A high-sensitivity configuration was designed and then fabricated, by electrochemically etching a silicon wafer. Refractive index sensing experiments were realized by flowing several dilutions with decreasing refractive indices, and measuring the spectral shift in real-time. The porous silicon microcavity sensor showed a very linear response over a wide refractive index range, with a sensitivity around 1000 nm/refractive index unit (RIU, which allowed us to directly detect refractive index variations in the 10−7 RIU range.

  6. Quality assurance of double-sided silicon microstrip sensors for the silicon tracking system in the CBM experiment at FAIR

    Energy Technology Data Exchange (ETDEWEB)

    Larionov, Pavel [Goethe Universitaet, Frankfurt (Germany); Collaboration: CBM-Collaboration

    2015-07-01

    The Silicon Tracking System (STS) is the core tracking detector of the CBM experiment at FAIR. The system's task is to reconstruct the trajectories of the charged particles produced in the beam-target interactions, provide their momentum determination, and enable the detection of decay topologies. The STS will comprise 1220 double-sided silicon microstrip sensors. After production each sensor will go through a number of Quality Assurance procedures to verify their validity for performance in the STS and also to confirm the manufacturer's data. In this talk, results of the quality assurance procedures that are being applied to the latest STS prototype sensors, including detailed tests of the quality of each single strip, long-term stability and preparations for volume tests during series production, are presented.

  7. Results from bonding of the SALT primary mirror edge sensors

    Science.gov (United States)

    Strydom, Ockert J.; Love, Jonathan; Gajjar, Hitesh

    2016-07-01

    The Southern African Large Telescope has till recently operated without active closed loop control of its Primary Mirror. The reason for this was that there were no suitable edge sensor system available on the market. Recently a system became available and SALT form Fogale Nanotech. The system consist of a sensor, cables and control electronics. The system was still under development and SALT was responsible for the integration of the sensors before deployment on the Telescope. Several issues still had to be addressed. One of these issues was the integration of the sensors at an appropriate production rate. The sensors was supplied as flexible pc boards with different types making up the transmitters and receivers. These flexible boards were bonded to ClearCeram Z L-Brackets before the appropriate connectors were installed. This paper describes the process used to integrate and test the sensors.

  8. XANES at the silicon k-edge in the kaolin-meta kaolin-geopolymer system

    International Nuclear Information System (INIS)

    Lima, F.T.; Silva, F.J.; Thaumaturgo, C.

    2005-01-01

    The geo polymer synthesis process optimization pretends to control the re logical and mechanical properties. The Al/Si ratio is the main variable that governs the geo polymerization process. This control occurs by changing temperature, pressure and chemical composition of the geo polymer. Thermal analysis (DTA/DSC), microscopic (SEM/TEM) and spectroscopic (FTIR, XRD, SAXS, EXAFS and XANES) techniques have been used to characterize these inorganic systems. In this work, XANES spectra of the k-edge silicon (Si) of the kaolin-meta kaolin-geo polymer are presented. The XANES spectra provides the oxidation state and structural information about the present studied atom: Silicon (Si). (author)

  9. Results on photon and neutron irradiation of semitransparent amorphous-silicon sensors

    CERN Document Server

    Carabe, J; Ferrando, A; Fuentes, J; Gandia, J J; Josa-Mutuberria, I; Molinero, A; Oller, J C; Arce, P; Calvo, E; Figueroa, C F; García, N; Matorras, F; Rodrigo, T; Vila, I; Virto, A L; Fenyvesi, A; Molnár, J; Sohler, D

    2000-01-01

    Semitransparent amorphous-silicon sensors are basic elements for laser 2D position reconstruction in the CMS multipoint alignment link system. Some of the sensors have to work in a very hard radiation environment. Two different sensor types have been irradiated with /sup 60/Co photons (up to 100 kGy) and fast neutrons (up to 10/sup 15 / cm/sup -2/), and the subsequent change in their performance has been measured. (13 refs).

  10. The Silicon Microstrip Sensors of the ATLAS SemiConductor Tracker

    CERN Document Server

    Ahmad, A; Allport, P P; Alonso, J; Andricek, L; Apsimon, R J; Barr, A J; Bates, R L; Beck, G A; Bell, P J; Belymam, A; Benes, J; Berg, C M; Bernabeu, J; Bethke, S; Bingefors, N; Bizzell, J P; Bohm, J; Brenner, R; Brodbeck, T J; Bruckman De Renstrom, P; Buttar, C M; Campbell, D; Carpentieri, C; Carter, A A; Carter, J R; Charlton, D G; Casse, G-L; Chilingarov, A; Cindro, V; Ciocio, A; Civera, J V; Clark, A G; Colijn, A-P; Costa, M J; Dabrowski, W; Danielsen, K M; Dawson, I; Demirkoz, B; Dervan, P; Dolezal, Z; Dorholt, O; Duerdoth, I P; Dwuznik, M; Eckert, S; Ekelöf, T; Eklund, L; Escobar, C; Fasching, D; Feld, L; Ferguson, D P S; Ferrere, D; Fortin, R; Foster, J M; Fox, H; French, R; Fromant, B P; Fujita, K; Fuster, J; Gadomski, S; Gallop, B J; Garcia, C; Garcia-Navarro, J E; Gibson, M D; Gonzalez, S; Gonzalez-Sevilla, S; Goodrick, M J; Gornicki, E; Green, C; Greenall, A; Grigson, C; Grillo, A A; Grosse-Knetter, J; Haber, C; Handa, T; Hara, K; Harper, R S; Hartjes, F G; Hashizaki, T; Hauff, D; Hessey, N P; Hill, J C; Hollins, T I; Holt, S; Horazdovsky, T; Hornung, M; Hovland, K M; Hughes, G; Huse, T; Ikegami, Y; Iwata, Y; Jackson, J N; Jakobs, K; Jared, R C; Johansen, L G; Jones, R W L; Jones, T J; de Jong, P; Joseph, J; Jovanovic, P; Kaplon, J; Kato, Y; Ketterer, C; Kindervaag, I M; Kodys, P; Koffeman, E; Kohriki, T; Kohout, Z; Kondo, T; Koperny, S; van der Kraaij, E; Kral, V; Kramberger, G; Kudlaty, J; Lacasta, C; Limper, M; Linhart, V; Llosa, G; Lozano, M; Ludwig, I; Ludwig, J; Lutz, G; Macpherson, A; McMahon, S J; Macina, D; Magrath, C A; Malecki, P; Mandic, I; Marti-Garcia, S; Matsuo, T; Meinhardt, J; Mellado, B; Mercer, I J; Mikestikova, M; Mikuz, M; Minano, M; Mistry, J; Mitsou, V; Modesto, P; Mohn, B; Molloy, S D; Moorhead, G; Moraes, A; Morgan, D; Morone, M C; Morris, J; Moser, H-G; Moszczynski, A; Muijs, A J M; Nagai, K; Nakamura, Y; Nakano, I; Nicholson, R; Niinikoski, T; Nisius, R; Ohsugi, T; O'Shea, V; Oye, O K; Parzefall, U; Pater, J R; Pernegger, H; Phillips, P W; Posisil, S; Ratoff, P N; Reznicek, P; Richardson, J D; Richter, R H; Robinson, D; Roe, S; Ruggiero, G; Runge, K; Sadrozinski, H F W; Sandaker, H; Schieck, J; Seiden, A; Shinma, S; Siegrist, J; Sloan, T; Smith, N A; Snow, S W; Solar, M; Solberg, A; Sopko, B; Sospedra, L; Spieler, H; Stanecka, E; Stapnes, S; Stastny, J; Stelzer, F; Stradling, A; Stugu, B; Takashima, R; Tanaka, R; Taylor, G; Terada, S; Thompson, R J; Titov, M; Tomeda, Y; Tovey, D R; Turala, M; Turner, P R; Tyndel, M; Ullan, M; Unno, Y; Vickey, T; Vos, M; Wallny, R; Weilhammer, P; Wells, P S; Wilson, J A; Wolter, M; Wormald, M; Wu, S L; Yamashita, T; Zontar, D; Zsenei, A

    2007-01-01

    This paper describes the AC-coupled, single-sided, p-in-n silicon microstrip sensors used in the SemiConductor Tracker (SCT) of the ATLAS experiment at the CERN Large Hadron Collider (LHC). The sensor requirements, specifications and designs are discussed, together with the qualification and quality assurance procedures adopted for their production. The measured sensor performance is presented, both initially and after irradiation to the fluence anticipated after 10 years of LHC operation. The sensors are now successfully assembled within the detecting modules of the SCT, and the SCT tracker is completed and integrated within the ATLAS Inner Detector. Hamamatsu Photonics Ltd supplied 92.2% of the 15,392 installed sensors, with the remainder supplied by CiS.

  11. Attachment of MEM piezoresistive silicon pressure sensor dies using different adhesives

    Directory of Open Access Journals (Sweden)

    Jović Vesna B.

    2011-01-01

    Full Text Available This paper gives comparison and discussion of adhesives used for attachment of silicon piezoresistive pressure sensor dies. Special attention is paid on low pressure sensor dies because of their extreme sensitivity on stresses, which can arise from packaging procedure and applied materials. Commercially available adhesives “Scotch Weld 2214 Hi-Temp” from “3M Co.” and “DM2700P/H848” from “DIEMAT”, USA, were compared. First of them is aluminum filled epoxy adhesive and second is low melting temperature (LMT glass paste. Comparing test results for low pressure sensor chips we found that LMT glass (glass frit is better adhesive for this application. Applying LMT glass paste minimizes internal stresses caused by disagreement of coefficients of thermal expansions between sensor die and housing material. Also, it minimizes stresses introduced during applying external loads in the process of pressure measuring. Regarding the measurements, for the sensors installed with filled epoxy paste, resistor for compensation of temperature offset change had negative values in all cases, which means that linear temperature compensation, of sensors installed this way, would be impossible. In the sensors installed with LMT glass paste, all results, without exception, were in their common limits (values, which give the possibility of passive temperature compensation. Furthermore, LMT glass attachment can broaden temperature operating range of MEM silicon pressure sensors towards higher values, up to 120 ºC.

  12. Superconducting transition edge sensors and methods for design and manufacture thereof

    Science.gov (United States)

    Sadleir, John E. (Inventor)

    2013-01-01

    Methods for forming sensors using transition edge sensors (TES) and sensors therefrom are described. The method includes forming a plurality of sensor arrays includes at least one TES device. The TES device includes a TES device body, a first superconducting lead contacting a first portion of the TES device body, and a second superconducting lead contacting of a second portion of the TES device body, where the first and second superconducting leads separated on the TES device body by a lead spacing. The lead spacing can be selected to be different for at least two of the plurality of sensor arrays. The method also includes determining a transition temperature for each of the plurality of sensor arrays and generating a signal responsive to detecting a change in the electrical characteristics of one of the plurality of sensor arrays meeting a transition temperature criterion.

  13. Modified porous silicon for electrochemical sensor of para-nitrophenol

    International Nuclear Information System (INIS)

    Belhousse, S.; Belhaneche-Bensemra, N.; Lasmi, K.; Mezaache, I.; Sedrati, T.; Sam, S.; Tighilt, F.-Z.; Gabouze, N.

    2014-01-01

    Highlights: • Hybrid device based on Porous silicon (PSi) and polythiophene (PTh) was prepared. • Three types of PSi/PTh hybrid structures were elaborated: PSi/PTh, oxide/PSi/PTh and Amino-propyltrimethoxysilane (APTMES)/oxide/PSi/PTh. • PTh was grafted on PSi using electrochemical polymerization. • The electrodetection of para-nitrophenol (p-NPh) was performed by cyclic voltammetry. • Oxide/PSi/PTh and APTMES/oxide/PSi/PTh, based electrochemical sensor showed a good response toward p-NPh. - Abstract: Hybrid structures based on polythiophene modified porous silicon was used for the electrochemical detection of para-nitrophenol, which is a toxic derivative of parathion insecticide and it is considered as a major toxic pollutant. The porous silicon was prepared by anodic etching in hydrofluodic acid. Polythiophene films were then grown by electropolymerisation of thiophene monomer on three different surfaces: hydrogenated PSi, oxidized PSi and amine-terminated PSi. The morphology of the obtained structures were observed by scanning electron microscopy and characterized by spectroscopy (FTIR). Cyclic voltammetry was used to study the electrochemical response of proposed structures to para-nitrophenol. The results show a high sensitivity of the sensor and a linearity of the electrochemical response in a large concentration interval ranging from 1.5 × 10 −8 M to the 3 × 10 −4 M

  14. Local sensor based on nanowire field effect transistor from inhomogeneously doped silicon on insulator

    Science.gov (United States)

    Presnov, Denis E.; Bozhev, Ivan V.; Miakonkikh, Andrew V.; Simakin, Sergey G.; Trifonov, Artem S.; Krupenin, Vladimir A.

    2018-02-01

    We present the original method for fabricating a sensitive field/charge sensor based on field effect transistor (FET) with a nanowire channel that uses CMOS-compatible processes only. A FET with a kink-like silicon nanowire channel was fabricated from the inhomogeneously doped silicon on insulator wafer very close (˜100 nm) to the extremely sharp corner of a silicon chip forming local probe. The single e-beam lithographic process with a shadow deposition technique, followed by separate two reactive ion etching processes, was used to define the narrow semiconductor nanowire channel. The sensors charge sensitivity was evaluated to be in the range of 0.1-0.2 e /√{Hz } from the analysis of their transport and noise characteristics. The proposed method provides a good opportunity for the relatively simple manufacture of a local field sensor for measuring the electrical field distribution, potential profiles, and charge dynamics for a wide range of mesoscopic objects. Diagnostic systems and devices based on such sensors can be used in various fields of physics, chemistry, material science, biology, electronics, medicine, etc.

  15. Progress in the Development of Mo-Au Transition-Edge Sensors for X-Ray Spectroscopy

    Science.gov (United States)

    Stahle, Caroline K.; Brekosky, Regis P.; Figueroa-Feliciano, Enectali; Finkbeiner, Fred M.; Gygax, John D.; Li, Mary J.; Lindeman, Mark A..; Porter, F. Scott; Tralshawalaa, Nilesh

    2000-01-01

    X-ray microcalorimeters using transition-edge sensors (TES) show great promise for use in astronomical x-ray spectroscopy. We have obtained very high energy resolution (2.8 electronvolts at 1.5 kiloelectronvolts and 3.7 electronvolts at 3.3 kiloelectronvolts) in a large, isolated TES pixel using a Mo/Au proximity-effect bilayer on a silicon nitride membrane. We will discuss the performance and our characterization of that device. In order to be truly suitable for use behind an x-ray telescope, however, such devices need to be arrayed with a pixel size and focal-plane coverage commensurate with the telescope focal length and spatial resolution. Since this requires fitting the TES and its thermal link, a critical component of each calorimeter pixel, into a far more compact geometry than has previously been investigated, we must study the fundamental scaling laws in pixel optimization. We have designed a photolithography mask that will allow us to probe the range in thermal conductance that can be obtained by perforating the nitride membrane in a narrow perimeter around the sensor. This mask will also show the effects of reducing the TES area. Though we have not yet tested devices of the compact designs, we will present our progress in several of the key processing steps and discuss the parameter space of our intended investigations.

  16. Effect of ultraviolet illumination and ambient gases on the photoluminescence and electrical properties of nanoporous silicon layer for organic vapor sensor.

    Science.gov (United States)

    Atiwongsangthong, Narin

    2012-08-01

    The purpose of this research, the nanoporous silicon layer were fabricated and investigated the physical properties such as photoluminescence and the electrical properties in order to develop organic vapor sensor by using nanoporous silicon. The Changes in the photoluminescence intensity of nanoporous silicon samples are studied during ultraviolet illumination in various ambient gases such as nitrogen, oxigen and vacuum. In this paper, the nanoporous silicon layer was used as organic vapor adsorption and sensing element. The advantage of this device are simple process compatible in silicon technology and usable in room temperature. The structure of this device consists of nanoporous silicon layer which is formed by anodization of silicon wafer in hydrofluoric acid solution and aluminum electrode which deposited on the top of nanoporous silicon layer by evaporator. The nanoporous silicon sensors were placed in a gas chamber with various organic vapor such as ethanol, methanol and isopropyl alcohol. From studying on electrical characteristics of this device, it is found that the nanoporous silicon layer can detect the different organic vapor. Therefore, the nanoporous silicon is important material for organic vapor sensor and it can develop to other applications about gas sensors in the future.

  17. Planar silicon sensors for the CMS Tracker upgrade

    CERN Document Server

    Junkes, Alexandra

    2013-01-01

    The CMS tracker collaboration has initiated a large material investigation and irradiation campaign to identify the silicon material and design that fulfills all requirements for detectors for the high-luminosity phase of the Large Hadron Collider (HL-LHC).A variety of silicon p-in-n and n-in-p test-sensors made from Float Zone, Deep-Diffused FZ and Magnetic Czochralski materials were manufactured by one single industrial producer, thus guaranteeing similar conditions for the production and design of the test-structures. Properties of different silicon materials and design choices have been systematically studied and compared.The samples have been irradiated with 1 MeV neutrons and protons corresponding to maximal fluences as expected for the positions of detector layers in the future tracker. Irradiations with protons of different energies (23 MeV and 23 GeV) have been performed to evaluate the energy dependence of the defect generation in oxygen rich material. All materials have been characterized before an...

  18. On the timing performance of thin planar silicon sensors

    Science.gov (United States)

    Akchurin, N.; Ciriolo, V.; Currás, E.; Damgov, J.; Fernández, M.; Gallrapp, C.; Gray, L.; Junkes, A.; Mannelli, M.; Martin Kwok, K. H.; Meridiani, P.; Moll, M.; Nourbakhsh, S.; Pigazzini, S.; Scharf, C.; Silva, P.; Steinbrueck, G.; de Fatis, T. Tabarelli; Vila, I.

    2017-07-01

    We report on the signal timing capabilities of thin silicon sensors when traversed by multiple simultaneous minimum ionizing particles (MIP). Three different planar sensors, with depletion thicknesses 133, 211, and 285 μm, have been exposed to high energy muons and electrons at CERN. We describe signal shape and timing resolution measurements as well as the response of these devices as a function of the multiplicity of MIPs. We compare these measurements to simulations where possible. We achieve better than 20 ps timing resolution for signals larger than a few tens of MIPs.

  19. Modified porous silicon for electrochemical sensor of para-nitrophenol

    Energy Technology Data Exchange (ETDEWEB)

    Belhousse, S., E-mail: all_samia_b@yahoo.fr [Centre de Recherche en Technologie des Semi-conducteurs pour l’Energétique (CRTSE), Division Thin Films-Surface and Interface, 2, Bd. Frantz Fanon, B.P. 140, Alger-7 merveilles, Algiers (Algeria); Belhaneche-Bensemra, N., E-mail: nbelhaneche@yahoo.fr [Ecole Nationale Polytechnique (ENP), 10, Avenue Hassen Badi, B.P. 182, 16200, El Harrach, Algiers (Algeria); Lasmi, K., E-mail: kahinalasmi@yahoo.fr [Centre de Recherche en Technologie des Semi-conducteurs pour l’Energétique (CRTSE), Division Thin Films-Surface and Interface, 2, Bd. Frantz Fanon, B.P. 140, Alger-7 merveilles, Algiers (Algeria); Mezaache, I., E-mail: lyeso_44@hotmail.fr [Ecole Nationale Polytechnique (ENP), 10, Avenue Hassen Badi, B.P. 182, 16200, El Harrach, Algiers (Algeria); Sedrati, T., E-mail: tarek_1990m@hotmail.fr [Ecole Nationale Polytechnique (ENP), 10, Avenue Hassen Badi, B.P. 182, 16200, El Harrach, Algiers (Algeria); Sam, S., E-mail: Sabrina.sam@polytechnique.edu [Centre de Recherche en Technologie des Semi-conducteurs pour l’Energétique (CRTSE), Division Thin Films-Surface and Interface, 2, Bd. Frantz Fanon, B.P. 140, Alger-7 merveilles, Algiers (Algeria); Tighilt, F.-Z., E-mail: mli_zola@yahoo.fr [Centre de Recherche en Technologie des Semi-conducteurs pour l’Energétique (CRTSE), Division Thin Films-Surface and Interface, 2, Bd. Frantz Fanon, B.P. 140, Alger-7 merveilles, Algiers (Algeria); Gabouze, N., E-mail: ngabouze@yahoo.fr [Centre de Recherche en Technologie des Semi-conducteurs pour l’Energétique (CRTSE), Division Thin Films-Surface and Interface, 2, Bd. Frantz Fanon, B.P. 140, Alger-7 merveilles, Algiers (Algeria)

    2014-11-15

    Highlights: • Hybrid device based on Porous silicon (PSi) and polythiophene (PTh) was prepared. • Three types of PSi/PTh hybrid structures were elaborated: PSi/PTh, oxide/PSi/PTh and Amino-propyltrimethoxysilane (APTMES)/oxide/PSi/PTh. • PTh was grafted on PSi using electrochemical polymerization. • The electrodetection of para-nitrophenol (p-NPh) was performed by cyclic voltammetry. • Oxide/PSi/PTh and APTMES/oxide/PSi/PTh, based electrochemical sensor showed a good response toward p-NPh. - Abstract: Hybrid structures based on polythiophene modified porous silicon was used for the electrochemical detection of para-nitrophenol, which is a toxic derivative of parathion insecticide and it is considered as a major toxic pollutant. The porous silicon was prepared by anodic etching in hydrofluodic acid. Polythiophene films were then grown by electropolymerisation of thiophene monomer on three different surfaces: hydrogenated PSi, oxidized PSi and amine-terminated PSi. The morphology of the obtained structures were observed by scanning electron microscopy and characterized by spectroscopy (FTIR). Cyclic voltammetry was used to study the electrochemical response of proposed structures to para-nitrophenol. The results show a high sensitivity of the sensor and a linearity of the electrochemical response in a large concentration interval ranging from 1.5 × 10{sup −8} M to the 3 × 10{sup −4}M.

  20. The Magnetically-Tuned Transition-Edge Sensor

    Science.gov (United States)

    Sadleir, John E.; Lee, Sang-Jun; Smith, Stephen J.; Busch, Sarah E.; Bandler, Simon R.; Adams, Joseph S.; Eckart, Megan E.; Chevenak, James A.; Kelley, Richard L.; Kilbourne, Caroline A.; hide

    2014-01-01

    We present the first measurements on the proposed magnetically-tuned superconducting transition-edge sensor (MTES) and compare the modified resistive transition with the theoretical prediction. A TES's resistive transition is customarily characterized in terms of the unit less device parameters alpha and beta corresponding to the resistive response to changes in temperature and current respectively. We present a new relationship between measured IV quantities and the parameters alpha and beta and use these relations to confirm we have stably biased a TES with negative beta parameter with magnetic tuning. Motivated by access to this new unexplored parameter space, we investigate the conditions for bias stability of a TES taking into account both self and externally applied magnetic fields.

  1. Characterization of silicon sensor materials and designs for the CMS Tracker Upgrade

    CERN Document Server

    Dierlamm, Alexander Hermann

    2012-01-01

    During the high luminosity phase of the LHC (HL-LHC, starting around 2020) the inner tracking system of CMS will be exposed to harsher conditions than the current system was designed for. Therefore a new tracker is planned to cope with higher radiation levels and higher occupancies. Within the strip sensor developments of CMS a comparative survey of silicon materials and technologies is being performed in order to identify the baseline material for the future tracker. Hence, a variety of materials (float-zone, magnetic Czochralski and epitaxially grown silicon with thicknesses from 50$\\mu$m to 320$\\mu$m as p- and n-type) has been processed at one company (Hamamatsu Photonics K.K.), irradiated (proton, neutron and mixed irradiations up to 1.5e15n$_{eq}$/cm$^2$ and beyond) and tested under identical conditions. The wafer layout includes a variety of devices to investigate different aspects of sensor properties like simple diodes, test-structures, small strip sensors and a strip sensor array with varying strip p...

  2. Design and tests of the silicon sensors for the ZEUS micro vertex detector

    International Nuclear Information System (INIS)

    Dannheim, D.; Koetz, U.; Coldewey, C.; Fretwurst, E.; Garfagnini, A.; Klanner, R.; Martens, J.; Koffeman, E.; Tiecke, H.; Carlin, R.

    2003-01-01

    To fully exploit the HERA-II upgrade, the ZEUS experiment has installed a Micro Vertex Detector (MVD) using n-type, single-sided, silicon μ-strip sensors with capacitive charge division. The sensors have a readout pitch of 120 μm, with five intermediate strips (20 μm strip pitch). The designs of the silicon sensors and of the test structures used to verify the technological parameters, are presented. Results on the electrical measurements are discussed. A total of 1123 sensors with three different geometries have been produced by Hamamatsu Photonics K.K. Irradiation tests with reactor neutrons and 60 Co photons have been performed for a small sample of sensors. The results on neutron irradiation (with a fluence of 1x10 13 1 MeV equivalent neutrons/cm 2 ) are well described by empirical formulae for bulk damage. The 60 Co photons (with doses up to 2.9 kGy) show the presence of generation currents in the SiO 2 -Si interface, a large shift of the flatband voltage and a decrease of the hole mobility

  3. Strip defect recognition in electrical tests of silicon microstrip sensors

    Energy Technology Data Exchange (ETDEWEB)

    Valentan, Manfred, E-mail: valentan@mpp.mpg.de

    2017-02-11

    This contribution describes the measurement procedure and data analysis of AC-coupled double-sided silicon microstrip sensors with polysilicon resistor biasing. The most thorough test of a strip sensor is an electrical measurement of all strips of the sensor; the measured observables include e.g. the strip's current and the coupling capacitance. These measurements are performed to find defective strips, e.g. broken capacitors (pinholes) or implant shorts between two adjacent strips. When a strip has a defect, its observables will show a deviation from the “typical value”. To recognize and quantify certain defects, it is necessary to determine these typical values, i.e. the values the observables would have without the defect. As a novel approach, local least-median-of-squares linear fits are applied to determine these “would-be” values of the observables. A least-median-of-squares fit is robust against outliers, i.e. it ignores the observable values of defective strips. Knowing the typical values allows to recognize, distinguish and quantify a whole range of strip defects. This contribution explains how the various defects appear in the data and in which order the defects can be recognized. The method has been used to find strip defects on 30 double-sided trapezoidal microstrip sensors for the Belle II Silicon Vertex Detector, which have been measured at the Institute of High Energy Physics, Vienna (Austria).

  4. Measurement of quasiparticle transport in aluminum films using tungsten transition-edge sensors

    International Nuclear Information System (INIS)

    Yen, J. J.; Shank, B.; Cabrera, B.; Moffatt, R.; Redl, P.; Young, B. A.; Tortorici, E. C.; Brink, P. L.; Cherry, M.; Tomada, A.; Kreikebaum, J. M.

    2014-01-01

    We report on experimental studies of phonon sensors which utilize quasiparticle diffusion in thin aluminum films connected to tungsten transition-edge-sensors (TESs) operated at 35 mK. We show that basic TES physics and a simple physical model of the overlap region between the W and Al films in our devices enables us to accurately reproduce the experimentally observed pulse shapes from x-rays absorbed in the Al films. We further estimate quasiparticle loss in Al films using a simple diffusion equation approach. These studies allow the design of phonon sensors with improved performance.

  5. Thermal physics of transition edge sensor arrays

    International Nuclear Information System (INIS)

    Hoevers, H.F.C.

    2006-01-01

    Thermal transport in transition edge sensor (TES)-based microcalorimeter arrays is reviewed. The fundamentals of thermal conductance in Si 3 N 4 membranes are discussed and the magnitude of the electron-phonon coupling and Kapitza coupling in practical devices is summarized. Next, the thermal transport in high-stopping power and low-heat capacity absorbers, required for arrays of TES microcalorimeters, is discussed in combination with a performance analysis of detectors with mushroom-absorbers. Finally, the phenomenology of unexplained excess noise, observed in both Mo- and Ti-based TESs, is briefly summarized and related with the coupling of the TES to the heat bath

  6. Precision Timing with Silicon Sensors for Use in Calorimetry

    Energy Technology Data Exchange (ETDEWEB)

    Bornheim, A. [Caltech; Ronzhin, A. [Fermilab; Kim, H. [Chicago U.; Bolla, G. [Fermilab; Pena, C. [Caltech; Xie, S. [Caltech; Apresyan, A. [Caltech; Los, S. [Fermilab; Spiropulu, M. [Caltech; Ramberg, E. [Fermilab

    2017-11-27

    The high luminosity upgrade of the Large Hadron Collider (HL-LHC) at CERN is expected to provide instantaneous luminosities of 5 × 1034 cm-2 s-1. The high luminosities expected at the HL-LHC will be accompanied by a factor of 5 to 10 more pileup compared with LHC conditions in 2015, causing general confusion for particle identification and event reconstruction. Precision timing allows to extend calorimetric measurements into such a high density environment by subtracting the energy deposits from pileup interactions. Calorimeters employing silicon as the active component have recently become a popular choice for the HL- LHC and future collider experiments which face very high radiation environments. We present studies of basic calorimetric and precision timing measurements using a prototype composed of tungsten absorber and silicon sensor as the active medium. We show that for the bulk of electromagnetic showers induced by electrons in the range of 20 GeV to 30 GeV, we can achieve time resolutions better than 25 ps per single pad sensor.

  7. Precision Timing with Silicon Sensors for Use in Calorimetry

    Science.gov (United States)

    Bornheim, A.; Ronzhin, A.; Kim, H.; Bolla, G.; Pena, C.; Xie, S.; Apresyan, A.; Los, S.; Spiropulu, M.; Ramberg, E.

    2017-11-01

    The high luminosity upgrade of the Large Hadron Collider (HL-LHC) at CERN is expected to provide instantaneous luminosities of 5 × 1034 cm -2 s -1. The high luminosities expected at the HL-LHC will be accompanied by a factor of 5 to 10 more pileup compared with LHC conditions in 2015, causing general confusion for particle identification and event reconstruction. Precision timing allows to extend calorimetric measurements into such a high density environment by subtracting the energy deposits from pileup interactions. Calorimeters employing silicon as the active component have recently become a popular choice for the HL- LHC and future collider experiments which face very high radiation environments. We present studies of basic calorimetric and precision timing measurements using a prototype composed of tungsten absorber and silicon sensor as the active medium. We show that for the bulk of electromagnetic showers induced by electrons in the range of 20 GeV to 30 GeV, we can achieve time resolutions better than 25 ps per single pad sensor.

  8. Studies of adhesives and metal contacts on silicon strip sensors for the ATLAS Inner Tracker

    OpenAIRE

    Poley, Anne-Luise

    2018-01-01

    This thesis presents studies investigating the use of adhesives on the active area of silicon strip sensors for the construction of silicon strip detector modules for the ATLAS Phase-II Upgrade. 60 ATLAS07 miniature sensors were tested using three UV cure glues in comparison with the current baseline glue (a non-conductive epoxy).The impact of irradiation on the chemical composition of all adhesives under investigation was studied using three standard methods for chemical analysis: quadrupole...

  9. Design, fabrication and characterization of the first AC-coupled silicon microstrip sensors in India

    International Nuclear Information System (INIS)

    Aziz, T; Chendvankar, S R; Mohanty, G B; Patil, M R; Rao, K K; Rani, Y R; Rao, Y P P; Behnamian, H; Mersi, S; Naseri, M

    2014-01-01

    This paper reports the design, fabrication and characterization of single-sided silicon microstrip sensors with integrated biasing resistors and coupling capacitors, produced for the first time in India. We have first developed a prototype sensor on a four-inch wafer. After finding suitable test procedures for characterizing these AC coupled sensors, we fine-tuned various process parameters in order to produce sensors of the desired specifications

  10. Characterization of irradiated thin silicon sensors for the CMS phase II pixel upgrade

    Energy Technology Data Exchange (ETDEWEB)

    Centis Vignali, Matteo; Garutti, Erika; Junkes, Alexandra; Steinbrueck, Georg [Institut fuer Experimentalphysik, Universitaet Hamburg (Germany); Eckstein, Doris; Eichhorn, Thomas [Deutsches Elektronen Synchrotron (DESY) (Germany)

    2016-07-01

    The high-luminosity upgrade of the Large Hadron Collider, foreseen for 2025, necessitates the replacement of the tracker of the CMS experiment. The innermost layer of the new pixel detector will be exposed to severe radiation corresponding to a 1 MeV neutron equivalent fluence up to Φ{sub eq} = 2 . 10{sup 16} cm{sup -2} and an ionizing dose of ∼ 10 MGy after an integrated luminosity of 3000 fb{sup -1}. Silicon crystals grown with different methods and sensor designs are under investigation in order to optimize the sensors for such high fluences. Thin planar silicon sensors are good candidates to achieve this goal, since the degradation of the signal produced by traversing particles is less severe than for thicker devices. Epitaxial pad diodes and strip sensors irradiated up to fluences of Φ{sub eq} = 1.3 . 10{sup 16} cm{sup -2} have been characterized in laboratory measurements and beam tests at the DESY II facility. The active thickness of the strip sensors and pad diodes is 100 μm. In addition, strip sensors produced using other growth techniques with a thickness of 200 μm have been studied. In this talk, the results obtained for p-bulk sensors are shown.

  11. Performance of the ALIBAVA portable readout system with irradiated and non-irradiated microstrip silicon sensors

    International Nuclear Information System (INIS)

    Marco-Hernadez, R.

    2009-01-01

    A readout system for microstrip silicon sensors has been developed as a result of collaboration among the University of Liverpool, the CNM of Barcelona and the IFIC of Valencia. The name of this collaboration is ALIBAVA and it is integrated in the RD50 Collaboration. This system is able to measure the collected charge in one or two microstrip silicon sensors by reading out all the channels of the sensor(s), up to 256, as an analogue measurement. The system uses two Beetle chips to read out the detector(s). The Beetle chip is an analogue pipelined readout chip used in the LHCb experiment. The system can operate either with non-irradiated and irradiated sensors as well as with n-type and p-type microstrip silicon sensors. Heavily irradiated sensors will be used at the SLHC, so this system is being to research the performance of microstrip silicon sensors in conditions as similar as possible to the SLHC operating conditions. The system has two main parts: a hardware part and a software part. The hardware part acquires the sensor signals either from external trigger inputs, in case of a radioactive source setup is used, or from a synchronised trigger output generated by the system, if a laser setup is used. This acquired data is sent by USB to be stored in a PC for a further processing. The hardware is a dual board based system. The daughterboard is a small board intended for containing two Beetle readout chips as well as fan-ins and detector support to interface the sensors. The motherboard is intended to process the data, to control the whole hardware and to communicate with the software by USB. The software controls the system and processes the data acquired from the sensors in order to store it in an adequate format file. The main characteristics of the system will be described. Results of measurements acquired with n-type and p-type irradiated and non-irradiated detectors using both the laser and the radioactive source setup will be also presented and discussed

  12. First results from Position-Sensitive quantum calorimeters using Mo/Au Transition-Edge Sensors

    International Nuclear Information System (INIS)

    Figueroa-Feliciano, Enectali; Chervenak, Jay; Finkbeiner, Fred M.; Li, Mary; Lindeman, Mark A.; Stahle, Caroline K.; Stahle, Carl M.

    2002-01-01

    We report the first results from a high-energy-resolution imaging spectrometer called a Position-Sensitive Transition-Edge Sensor (PoST). A PoST is a quantum calorimeter consisting of two Transition Edge Sensors (TESs) on the ends of a long absorber to do one dimensional imaging spectroscopy. Comparing rise time and energy information, the position of the event in the PoST is determined. Energy is inferred from the sum of the two pulses. We have fabricated 7- and 15-pixel PoSTs using Mo-Au TESs and Au absorbers. We have achieved 32 eV FWHM energy resolution at 1.5 keV with a 7-pixel PoST calorimeter

  13. Characteristics of Ti films for transition-edge sensor microcalorimeters

    International Nuclear Information System (INIS)

    Ukibe, M.; Koyanagi, M.; Ohkubo, M.; Pressler, H.; Kobayashi, N.

    1999-01-01

    We are developing X-ray microcalorimeters using superconducting transition-edge sensors (TESs), which can be operated at relatively high base temperatures of a 3 He cryostat. For this purpose, we have selected Ti films to be used as TESs. The Ti films were deposited on different substrates by RF-sputtering. It was found that the superconducting properties of the Ti films depended on Ar pressure, film thickness, and substrate surface roughness

  14. IV and CV curves for irradiated prototype BTeV silicon pixel sensors

    International Nuclear Information System (INIS)

    Coluccia, Maria R.

    2002-01-01

    The authors present IV and CV curves for irradiated prototype n + /n/p + silicon pixel sensors, intended for use in the BTeV experiment at Fermilab. They tested pixel sensors from various vendors and with two pixel isolation layouts: p-stop and p-spray. Results are based on exposure with 200 MeV protons up to 6 x 10 14 protons/cm 2

  15. Study of edge effects in the breakdown process of p sup + on n-bulk silicon diodes

    CERN Document Server

    Militaru, O; Bozzi, C; Rold, M D; Dell'Orso, R; Dutta, S; Messineo, A; Mihul, A; Tonelli, G; Verdini, P G; Wheadon, R; Xie, Z

    2000-01-01

    The paper describes the role of the n sup + edge implants in the breakdown process of p sup + on n-bulk silicon diodes. Laboratory measurements and simulation studies are presented on a series of test structures aimed at an optimization of the design in the edge region. The dependence of the breakdown voltage on the geometrical parameters of the devices is discussed in detail. Design rules are extracted for the use of n sup + -layers along the scribe line to avoid surface conduction of current generated by the exposed edges. The effect of neutron irradiation has been studied up to a fluence of 1.8x10 sup 1 sup 5 cm sup - sup 2.

  16. High Temperature Dynamic Pressure Measurements Using Silicon Carbide Pressure Sensors

    Science.gov (United States)

    Okojie, Robert S.; Meredith, Roger D.; Chang, Clarence T.; Savrun, Ender

    2014-01-01

    Un-cooled, MEMS-based silicon carbide (SiC) static pressure sensors were used for the first time to measure pressure perturbations at temperatures as high as 600 C during laboratory characterization, and subsequently evaluated in a combustor rig operated under various engine conditions to extract the frequencies that are associated with thermoacoustic instabilities. One SiC sensor was placed directly in the flow stream of the combustor rig while a benchmark commercial water-cooled piezoceramic dynamic pressure transducer was co-located axially but kept some distance away from the hot flow stream. In the combustor rig test, the SiC sensor detected thermoacoustic instabilities across a range of engine operating conditions, amplitude magnitude as low as 0.5 psi at 585 C, in good agreement with the benchmark piezoceramic sensor. The SiC sensor experienced low signal to noise ratio at higher temperature, primarily due to the fact that it was a static sensor with low sensitivity.

  17. Functional characterization of planar sensors with active edges using laser and X-ray beam scans

    International Nuclear Information System (INIS)

    Povoli, M.; Bagolini, A.; Boscardin, M.; Dalla Betta, G.-F.; Giacomini, G.; Hasi, J.; Oh, A.; Zorzi, N.

    2013-01-01

    We report on the functional characterization of planar sensors with active edges fabricated at Fondazione Bruno Kessler (FBK), Trento, Italy. The measurements here reported were performed by means of laser and X-ray beam scans mainly focusing on the signal efficiency of the edge region of the devices. Results are very encouraging and show very good sensitivity up to few microns away from the device physical edge

  18. Functional characterization of planar sensors with active edges using laser and X-ray beam scans

    Energy Technology Data Exchange (ETDEWEB)

    Povoli, M., E-mail: povoli@disi.unitn.it [Dipartimento di Ingegneria e Scienza dell' Informazione, Università di Trento, Via Sommarive, 14, I-38123 Povo di Trento (Italy); INFN, Sezione di Padova (Gruppo Collegato di Trento),Via Sommarive, 14, I-38123 Povo di Trento (Italy); Bagolini, A.; Boscardin, M. [Fondazione Bruno Kessler, Centro per i Materiali e i Microsistemi (FBK-CMM), Via Sommarive, 18, I-38123 Povo di Trento (Italy); Dalla Betta, G.-F. [Dipartimento di Ingegneria e Scienza dell' Informazione, Università di Trento, Via Sommarive, 14, I-38123 Povo di Trento (Italy); INFN, Sezione di Padova (Gruppo Collegato di Trento),Via Sommarive, 14, I-38123 Povo di Trento (Italy); Giacomini, G. [Fondazione Bruno Kessler, Centro per i Materiali e i Microsistemi (FBK-CMM), Via Sommarive, 18, I-38123 Povo di Trento (Italy); Hasi, J. [SLAC National Accelerator Laboratory, 2575 Sand Hill Road, Menlo Park, CA 94025-7015 (United States); Oh, A. [The University of Manchester, Oxford Road, Manchester M13 9PL (United Kingdom); Zorzi, N. [Fondazione Bruno Kessler, Centro per i Materiali e i Microsistemi (FBK-CMM), Via Sommarive, 18, I-38123 Povo di Trento (Italy)

    2013-08-01

    We report on the functional characterization of planar sensors with active edges fabricated at Fondazione Bruno Kessler (FBK), Trento, Italy. The measurements here reported were performed by means of laser and X-ray beam scans mainly focusing on the signal efficiency of the edge region of the devices. Results are very encouraging and show very good sensitivity up to few microns away from the device physical edge.

  19. Characteristics of Ti films for transition-edge sensor microcalorimeters

    CERN Document Server

    Ukibe, M; Ohkubo, M; Pressler, H; Kobayashi, N

    1999-01-01

    We are developing X-ray microcalorimeters using superconducting transition-edge sensors (TESs), which can be operated at relatively high base temperatures of a sup 3 He cryostat. For this purpose, we have selected Ti films to be used as TESs. The Ti films were deposited on different substrates by RF-sputtering. It was found that the superconducting properties of the Ti films depended on Ar pressure, film thickness, and substrate surface roughness.

  20. High quantum efficiency annular backside silicon photodiodes for reflectance pulse oximetry in wearable wireless body sensors

    DEFF Research Database (Denmark)

    Duun, Sune Bro; Haahr, Rasmus Grønbek; Hansen, Ole

    2010-01-01

    The development of annular photodiodes for use in a reflectance pulse oximetry sensor is presented. Wearable and wireless body sensor systems for long-term monitoring require sensors that minimize power consumption. We have fabricated large area 2D ring-shaped silicon photodiodes optimized...

  1. Characterization of silicon micro-strip sensors with a pulsed infra-red laser system for the CBM experiment at FAIR

    Energy Technology Data Exchange (ETDEWEB)

    Ghosh, Pradeep [Goethe University, Frankfurt am Main (Germany); GSI Helmholtz Center for Heavy Ion Research GmbH, Darmstadt (Germany); Eschke, Juergen [GSI Helmholtz Center for Heavy Ion Research GmbH, Darmstadt (Germany); Facility for Anti-proton and Ion Research, GmbH, Darmstadt (Germany); Collaboration: CBM-Collaboration

    2015-07-01

    The Silicon Tracking System (STS) of the CBM experiment at FAIR is composed of 8 tracking stations comprising of 1292 double-sided silicon micro-strip sensors. A Laser Test System (LTS) has been developed for the quality assurance of prototype sensors. The aim is to scan sensors with a pulsed infra-red laser driven by step motor to determine the charge sharing in-between strips and to measure qualitative uniformity of the sensor response over the whole active area. Several prototype sensors with strip pitch of 50 and 58 μm have been tested, as well as a prototype module with realistic mechanical arrangement of sensor and read-out cables. The LTS is designed to measure sensor response in an automatized procedure across the sensor with focused laser beam (spot-size ∼ 12 μm, wavelength = 1060 nm). The pulse with duration (∼ 10 ns) and power (∼ 5 mW) of the laser pulses is selected such, that the absorption of the laser light in the 300 μm thick silicon sensors produces a number of about 24000 electrons, which is similar to the charge created by minimum ionizing particles (MIP) in these sensors. Results from laser scans of prototype sensors and detector module are reported.

  2. Packaging of silicon sensors for microfluidic bio-analytical applications

    International Nuclear Information System (INIS)

    Wimberger-Friedl, Reinhold; Prins, Menno; Megens, Mischa; Dittmer, Wendy; Witz, Christiane de; Nellissen, Ton; Weekamp, Wim; Delft, Jan van; Ansems, Will; Iersel, Ben van

    2009-01-01

    A new industrial concept is presented for packaging biosensor chips in disposable microfluidic cartridges to enable medical diagnostic applications. The inorganic electronic substrates, such as silicon or glass, are integrated in a polymer package which provides the electrical and fluidic interconnections to the world and provides mechanical strength and protection for out-of-lab use. The demonstrated prototype consists of a molded interconnection device (MID), a silicon-based giant magneto-resistive (GMR) biosensor chip, a flex and a polymer fluidic part with integrated tubing. The various processes are compatible with mass manufacturing and run at a high yield. The devices show a reliable electrical interconnection between the sensor chip and readout electronics during extended wet operation. Sandwich immunoassays were carried out in the cartridges with surface functionalized sensor chips. Biological response curves were determined for different concentrations of parathyroid hormone (PTH) on the packaged biosensor, which demonstrates the functionality and biocompatibility of the devices. The new packaging concept provides a platform for easy further integration of electrical and fluidic functions, as for instance required for integrated molecular diagnostic devices in cost-effective mass manufacturing

  3. Recent progress in sensor- and mechanics-R and D for the Belle II Silicon Vertex Detector

    Energy Technology Data Exchange (ETDEWEB)

    Bergauer, T., E-mail: thomas.bergauer@oeaw.ac.at [Institute of High Energy Physics, Nikolsdorfer Gasse 18, A-1050 Vienna (Austria); Doljeschi, P.; Frankenberger, A.; Friedl, M.; Gfall, I.; Irmler, C. [Institute of High Energy Physics, Nikolsdorfer Gasse 18, A-1050 Vienna (Austria); Onuki, Y. [University of Tokyo, Department of Physics, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-0033 (Japan); Smiljic, D. [Institute of High Energy Physics, Nikolsdorfer Gasse 18, A-1050 Vienna (Austria); Tsuboyama, T. [KEK, 1-1 Oho, Tsukuba, Ibaraki 305-0801 (Japan); Valentan, M. [Institute of High Energy Physics, Nikolsdorfer Gasse 18, A-1050 Vienna (Austria)

    2013-08-01

    The Belle experiment at the KEKB electron/positron collider in Tsukuba (Japan) was successfully running for more than ten years. A major update of the machine to SuperKEKB is now foreseen until 2015, aiming a peak luminosity which is 40 times the peak value of the previous system. This also requires a redesign of the Belle detector (leading to Belle II) and especially its Silicon Vertex Detector (SVD), which surrounds the beam pipe. The future Belle II SVD will consist of four layers of double-sided silicon strip sensors based on 6 in. silicon wafers. Three of the four layers will be equipped with trapezoidal sensors in the slanted forward region. Moreover, two inner layers with pixel detectors based on DEPFET technology will complement the SVD as innermost detector. Since the KEKB-factory operates at relatively low energy, material inside the active volume has to be minimized in order to reduce multiple scattering. This can be achieved by arranging the sensors in the so-called “Origami chip-on-sensor concept”, and a very light-weight mechanical support structure made from carbon fiber reinforced Airex foam. Moreover, CO{sub 2} cooling for the front-end chips will ensure high efficiency at minimum material budget. In this paper, an overview of the future Belle II SVD design will be given, covering the silicon sensors, the readout electronics and the mechanics. A strong emphasis will be given to our R and D work on double-sided sensors where different p-stop layouts for the n-side of the detectors were compared. Moreover, this paper gives updated numbers for the mechanical dimensions of the ladders and their radii.

  4. Recent progress in sensor- and mechanics-R and D for the Belle II Silicon Vertex Detector

    International Nuclear Information System (INIS)

    Bergauer, T.; Doljeschi, P.; Frankenberger, A.; Friedl, M.; Gfall, I.; Irmler, C.; Onuki, Y.; Smiljic, D.; Tsuboyama, T.; Valentan, M.

    2013-01-01

    The Belle experiment at the KEKB electron/positron collider in Tsukuba (Japan) was successfully running for more than ten years. A major update of the machine to SuperKEKB is now foreseen until 2015, aiming a peak luminosity which is 40 times the peak value of the previous system. This also requires a redesign of the Belle detector (leading to Belle II) and especially its Silicon Vertex Detector (SVD), which surrounds the beam pipe. The future Belle II SVD will consist of four layers of double-sided silicon strip sensors based on 6 in. silicon wafers. Three of the four layers will be equipped with trapezoidal sensors in the slanted forward region. Moreover, two inner layers with pixel detectors based on DEPFET technology will complement the SVD as innermost detector. Since the KEKB-factory operates at relatively low energy, material inside the active volume has to be minimized in order to reduce multiple scattering. This can be achieved by arranging the sensors in the so-called “Origami chip-on-sensor concept”, and a very light-weight mechanical support structure made from carbon fiber reinforced Airex foam. Moreover, CO 2 cooling for the front-end chips will ensure high efficiency at minimum material budget. In this paper, an overview of the future Belle II SVD design will be given, covering the silicon sensors, the readout electronics and the mechanics. A strong emphasis will be given to our R and D work on double-sided sensors where different p-stop layouts for the n-side of the detectors were compared. Moreover, this paper gives updated numbers for the mechanical dimensions of the ladders and their radii

  5. Slim edge studies, design and quality control of planar ATLAS IBL pixel sensors

    Energy Technology Data Exchange (ETDEWEB)

    Wittig, Tobias

    2013-05-08

    One of the four large experiments at the LHC at CERN is the ATLAS detector, a multi purpose detector. Its pixel detector, composed of three layers, is the innermost part of the tracker. As it is closest to the interaction point, it represents a basic part of the track reconstruction. Besides the requested high resolution one main requirement is the radiation hardness. In the coming years the radiation damage will cause deteriorations of the detector performance. With the planned increase of the luminosity, especially after the upgrade to the High Luminosity LHC, this radiation damage will be even intensified. This circumstance necessitates a new pixel detector featuring improved radiation hard sensors and read-out chips. The present shutdown of the LHC is already utilized to insert an additional b-layer (IBL) into the existing ATLAS pixel detector. The current n-in-n pixel sensor design had to be adapted to the new read-out chip and the module specifications. The new stave geometry requests a reduction of the inactive sensor edge. In a prototype wafer production all modifications have been implemented. The sensor quality control was supervised which led to the decision of the final sensor thickness. In order to evaluate the performance of the sensor chip assemblies with an innovative slim edge design, they have been operated in test beam setups before and after irradiation. Furthermore, the quality control of the planar IBL sensor wafer production was supervised from the stage of wafer delivery to that before the flip chip process to ensure a sufficient amount of functional sensors for the module production.

  6. Performance of Edgeless Silicon Pixel Sensors on p-type substrate for the ATLAS High-Luminosity Upgrade

    CERN Document Server

    INSPIRE-00052711; Boscardin, Maurizio; Bosisio, Luciano; Calderini, Giovanni; Chauveau, Jacques; Ducourthial, Audrey; Giacomini, Gabriele; Marchiori, Giovanni; Zorzi, Nicola

    2016-01-01

    In view of the LHC upgrade phases towards the High Luminosity LHC (HL-LHC), the ATLAS experiment plans to upgrade the Inner Detector with an all-silicon system. The n-on-p silicon technology is a promising candidate to achieve a large area instrumented with pixel sensors, since it is radiation hard and cost effective. The paper reports on the performance of novel n-on-p edgeless planar pixel sensors produced by FBK-CMM, making use of the active trench for the reduction of the dead area at the periphery of the device. After discussing the sensor technology an overview of the first beam test results will be given.

  7. Development of Edgeless Silicon Pixel Sensors on p-type substrate for the ATLAS High-Luminosity Upgrade

    Energy Technology Data Exchange (ETDEWEB)

    Calderini, G. [Laboratoire de Physique Nucléaire et des Hautes Energies (LPNHE), Paris (France); Dipartimento di Fisica E. Fermi, Universitá di Pisa, Pisa (Italy); Bagolini, A. [Fondazione Bruno Kessler, Centro per i Materiali e i Microsistemi (FBK-CMM), Povo di Trento (Italy); Beccherle, R. [Istituto Nazionale di Fisica Nucleare, Sez. di Pisa (Italy); Bomben, M. [Laboratoire de Physique Nucléaire et des Hautes Energies (LPNHE), Paris (France); Boscardin, M. [Fondazione Bruno Kessler, Centro per i Materiali e i Microsistemi (FBK-CMM), Povo di Trento (Italy); Bosisio, L. [Università degli studi di Trieste (Italy); INFN-Trieste (Italy); Chauveau, J. [Laboratoire de Physique Nucléaire et des Hautes Energies (LPNHE), Paris (France); Giacomini, G. [Fondazione Bruno Kessler, Centro per i Materiali e i Microsistemi (FBK-CMM), Povo di Trento (Italy); La Rosa, A. [Section de Physique (DPNC), Universitè de Geneve, Geneve (Switzerland); Marchiori, G. [Laboratoire de Physique Nucléaire et des Hautes Energies (LPNHE), Paris (France); Zorzi, N. [Fondazione Bruno Kessler, Centro per i Materiali e i Microsistemi (FBK-CMM), Povo di Trento (Italy)

    2016-09-21

    In view of the LHC upgrade phases towards the High Luminosity LHC (HL-LHC), the ATLAS experiment plans to upgrade the Inner Detector with an all-silicon system. The n-on-p silicon technology is a promising candidate to achieve a large area instrumented with pixel sensors, since it is radiation hard and cost effective. The presentation describes the performance of novel n-in-p edgeless planar pixel sensors produced by FBK-CMM, making use of the active trench for the reduction of the dead area at the periphery of the device. After discussing the sensor technology, some feedback from preliminary results of the first beam test will be discussed.

  8. Development and applications of monocrystalline silicon radiation sensors fabricated at Comision Nacional de Energia Atomica (CNEA)

    International Nuclear Information System (INIS)

    Bolzi, C; Bruno, C; Duran, J; Godfrin, E; Martinez Bogado, M; Pla, J; Tamasi, M

    2005-01-01

    The development of silicon photovoltaic sensors at CNEA has begun in 1998.These sensors, fabricated in the Photovoltaic Laboratory of the Solar Energy Group at Constituyentes Atomic Center, have been used to build low cost radiometers as well as solar angular position sensors on board of artificial satellites.The design, fabrication and calibration of these sensors have been made in different prototypes in order to analyze its performance and to evaluate its limitations.Nowadays, several commercial prototypes have been distributed in different laboratories of our country in order to evaluate them in real work conditions.Particularly, the first experiment of argentine solar cells on space performed on board of SAC-A satellite, included the fabrication of position sensors of this satellite as part of the alignment system of the solar array respect to the sun.In this article, the state of the art of monocrystalline silicon photovoltaic sensors fabricated at CNEA for terrestrial and space applications is presented

  9. Piezoresistive pressure sensor using low-temperature aluminium induced crystallization of sputter-deposited amorphous silicon film

    International Nuclear Information System (INIS)

    Tiwari, Ruchi; Chandra, Sudhir

    2013-01-01

    In the present work, we have investigated the piezoresistive properties of silicon films prepared by the radio frequency magnetron sputtering technique, followed by the aluminium induced crystallization (AIC) process. Orientation and grain size of the polysilicon films were studied by x-ray diffraction analysis and found to be in the range 30–50 nm. Annealing of the Al–Si stack on an oxidized silicon substrate was performed in air ambient at 300–550 °C, resulting in layer exchange and transformation from amorphous to polysilicon phase. Van der Pauw and Hall measurement techniques were used to investigate the sheet resistance and carrier mobility of the resulting polycrystalline silicon film. The effect of Al thickness on the sheet resistance and mobility was also studied in the present work. A piezoresistive pressure sensor was fabricated on an oxidized silicon substrate in a Wheatstone bridge configuration, comprising of four piezoresistors made of polysilicon film obtained by the AIC process. The diaphragm was formed by the bulk-micromachining of silicon substrate. The response of the pressure sensor with applied negative pressure in 10–95 kPa range was studied. The gauge factor was estimated to be 5 and 18 for differently located piezoresistors on the diaphragm. The sensitivity of the pressure sensor was measured to be ∼ 30 mV MPa −1 , when the Wheatstone bridge was biased at 1 V input voltage. (paper)

  10. Impact of low-dose electron irradiation on n+p silicon strip sensors

    CERN Document Server

    Adam, W.; Dragicevic, M.; Friedl, M.; Fruehwirth, R.; Hoch, M.; Hrubec, J.; Krammer, M.; Treberspurg, W.; Waltenberger, W.; Alderweireldt, S.; Beaumont, W.; Janssen, X.; Luyckx, S.; Van Mechelen, P.; Van Remortel, N.; Van Spilbeeck, A.; Barria, P.; Caillol, C.; Clerbaux, B.; De Lentdecker, G.; Dobur, D.; Favart, L.; Grebenyuk, A.; Lenzi, Th.; Leonard, A.; Maerschalk, Th.; Mohammadi, A.; Pernie, L.; Randle-Conde, A.; Reis, T.; Seva, T.; Thomas, L.; Vander Velde, C.; Vanlaer, P.; Wang, J.; Zenoni, F.; Abu Zeid, S.; Blekman, F.; De Bruyn, I.; D'Hondt, J.; Daci, N.; Deroover, K.; Heracleous, N.; Keaveney, J.; Lowette, S.; Moreels, L.; Olbrechts, A.; Python, Q.; Tavernier, S.; Van Mulders, P.; Van Onsem, G.; Van Parijs, I.; Strom, D.A.; Basegmez, S.; Bruno, G.; Castello, R.; Caudron, A.; Ceard, L.; De Callatay, B.; Delaere, C.; Pree, T.Du; Forthomme, L.; Giammanco, A.; Hollar, J.; Jez, P.; Michotte, D.; Nuttens, C.; Perrini, L.; Pagano, D.; Quertenmont, L.; Selvaggi, M.; Marono, M.Vidal; Beliy, N.; Caebergs, T.; Daubie, E.; Hammad, G.H.; Harkonen, J.; Lampen, T.; Luukka, P.R.; Maenpaa, T.; Peltola, T.; Tuominen, E.; Tuovinen, E.; Eerola, P.; Tuuva, T.; Beaulieu, G.; Boudoul, G.; Combaret, C.; Contardo, D.; Gallbit, G.; Lumb, N.; Mathez, H.; Mirabito, L.; Perries, S.; Sabes, D.; Vander Donckt, M.; Verdier, P.; Viret, S.; Zoccarato, Y.; Agram, J.L.; Conte, E.; Fontaine, J.Ch.; Andrea, J.; Bloch, D.; Bonnin, C.; Brom, J.M.; Chabert, E.; Charles, L.; Goetzmann, Ch.; Gross, L.; Hosselet, J.; Mathieu, C.; Richer, M.; Skovpen, K.; Autermann, C.; Edelhoff, M.; Esser, H.; Feld, L.; Karpinski, W.; Klein, K.; Lipinski, M.; Ostapchuk, A.; Pierschel, G.; Preuten, M.; Raupach, F.; Sammet, J.; Schael, S.; Schwering, G.; Wittmer, B.; Wlochal, M.; Zhukov, V.; Pistone, C.; Fluegge, G.; Kuensken, A.; Geisler, M.; Pooth, O.; Stahl, A.; Bartosik, N.; Behr, J.; Burgmeier, A.; Calligaris, L.; Dolinska, G.; Eckerlin, G.; Eckstein, D.; Eichhorn, T.; Fluke, G.; Garcia, J.Garay; Gizhko, A.; Hansen, K.; Harb, A.; Hauk, J.; Kalogeropoulos, A.; Kleinwort, C.; Korol, I.; Lange, W.; Lohmann, W.; Mankel, R.; Maser, H.; Mittag, G.; Muhl, C.; Mussgiller, A.; Nayak, A.; Ntomari, E.; Perrey, H.; Pitzl, D.; Schroeder, M.; Seitz, C.; Spannagel, S.; Zuber, A.; Biskop, H.; Blobel, V.; Buhmann, P.; Centis-Vignali, M.; Draeger, A.R.; Erfle, J.; Garutti, E.; Haller, J.; Henkel, Ch.; Hoffmann, M.; Junkes, A.; Klanner, R.; Lapsien, T.; Mattig, S.; Matysek, M.; Perieanu, A.; Poehlsen, J.; Poehlsen, T.; Scharf, Ch.; Schleper, P.; Schmidt, A.; Schuwalow, S.; Schwandt, J.; Sola, V.; Steinbruck, G.; Vormwald, B.; Wellhausen, J.; Barvich, T.; Barth, Ch.; Boegelspacher, F.; De Boer, W.; Butz, E.; Casele, M.; Colombo, F.; Dierlamm, A.; Eber, R.; Freund, B.; Hartmann, F.; Hauth, Th.; Heindl, S.; Hoffmann, K.H.; Husemann, U.; Kornmeyer, A.; Mallows, S.; Muller, Th.; Nuernberg, A.; Printz, M.; Simonis, H.J.; Steck, P.; Weber, M.; Weiler, Th.; Bhardwaj, A.; Kumar, A.; Ranjan, K.; Bakhshiansohl, H.; Behnamian, H.; Khakzad, M.; Naseri, M.; Cariola, P.; De Robertis, G.; Fiore, L.; Franco, M.; Loddo, F.; Sala, G.; Silvestris, L.; Creanza, D.; De Palma, M.; Maggi, G.; My, S.; Selvaggi, G.; Albergo, S.; Cappello, G.; Chiorboli, M.; Costa, S.; Giordano, F.; Di Mattia, A.; Potenza, R.; Saizu, M.A.; Tricomi, A.; Tuve, C.; Barbagli, G.; Brianzi, M.; Ciaranfi, R.; Civinini, C.; Gallo, E.; Meschini, M.; Paoletti, S.; Sguazzoni, G.; Ciulli, V.; D'Alessandro, R.; Gonzi, S.; Gori, V.; Focardi, E.; Lenzi, P.; Scarlini, E.; Tropiano, A.; Viliani, L.; Ferro, F.; Robutti, E.; Lo Vetere, M.; Gennai, S.; Malvezzi, S.; Menasce, D.; Moroni, L.; Pedrini, D.; Dinardo, M.; Fiorendi, S.; Manzoni, R.A.; Azzi, P.; Bacchetta, N.; Bisello, D.; Dall'Osso, M.; Dorigo, T.; Giubilato, P.; Pozzobon, N.; Tosi, M.; Zucchetta, A.; De Canio, F.; Gaioni, L.; Manghisoni, M.; Nodari, B.; Re, V.; Traversi, G.; Comotti, D.; Ratti, L.; Bilei, G.M.; Bissi, L.; Checcucci, B.; Magalotti, D.; Menichelli, M.; Saha, A.; Servoli, L.; Storchi, L.; Biasini, M.; Conti, E.; Ciangottini, D.; Fano, L.; Lariccia, P.; Mantovani, G.; Passeri, D.; Placidi, P.; Salvatore, M.; Santocchia, A.; Solestizi, L.A.; Spiezia, A.; Demaria, N.; Rivetti, A.; Bellan, R.; Casasso, S.; Costa, M.; Covarelli, R.; Migliore, E.; Monteil, E.; Musich, M.; Pacher, L.; Ravera, F.; Romero, A.; Solano, A.; Trapani, P.; Jaramillo Echeverria, R.; Fernandez, M.; Gomez, G.; Moya, D.; F. Gonzalez Sanchez, J.; Munoz Sanchez, F.J.; Vila, I.; Virto, A.L.; Abbaneo, D.; Ahmed, I.; Albert, E.; Auzinger, G.; Berruti, G.; Bianchi, G.; Blanchot, G.; Breuker, H.; Ceresa, D.; Christiansen, J.; Cichy, K.; Daguin, J.; D'Alfonso, M.; D'Auria, A.; Detraz, S.; De Visscher, S.; Deyrail, D.; Faccio, F.; Felici, D.; Frank, N.; Gill, K.; Giordano, D.; Harris, P.; Honma, A.; Kaplon, J.; Kornmayer, A.; Kortelainen, M.; Kottelat, L.; Kovacs, M.; Mannelli, M.; Marchioro, A.; Marconi, S.; Martina, S.; Mersi, S.; Michelis, S.; Moll, M.; Onnela, A.; Pakulski, T.; Pavis, S.; Peisert, A.; Pernot, J.F.; Petagna, P.; Petrucciani, G.; Postema, H.; Rose, P.; Rzonca, M.; Stoye, M.; Tropea, P.; Troska, J.; Tsirou, A.; Vasey, F.; Vichoudis, P.; Verlaat, B.; Zwalinski, L.; Bachmair, F.; Becker, R.; Bani, L.; di Calafiori, D.; Casal, B.; Djambazov, L.; Donega, M.; Dunser, M.; Eller, P.; Grab, C.; Hits, D.; Horisberger, U.; Hoss, J.; Kasieczka, G.; Lustermann, W.; Mangano, B.; Marionneau, M.; Martinez Ruiz del Arbol, P.; Masciovecchio, M.; Perrozzi, L.; Roeser, U.; Rossini, M.; Starodumov, A.; Takahashi, M.; Wallny, R.; Amsler, C.; Bosiger, K.; Caminada, L.; Canelli, F.; Chiochia, V.; De Cosa, A.; Galloni, C.; Hreus, T.; Kilminster, B.; Lange, C.; Maier, R.; Ngadiuba, J.; Pinna, D.; Robmann, P.; Taroni, S.; Yang, Y.; Bertl, W.; Deiters, K.; Erdmann, W.; Horisberger, R.; Kaestli, H.C.; Kotlinski, D.; Langenegger, U.; Meier, B.; Rohe, T.; Streuli, S.; Chen, P.H.; Dietz, C.; Grundler, U.; Hou, W.S.; Lu, R.S.; Moya, M.; Wilken, R.; Cussans, D.; Flacher, H.; Goldstein, J.; Grimes, M.; Jacob, J.; El Nasr-Storey, S.Seif; Cole, J.; Hobson, P.; Leggat, D.; Reid, I.D.; Teodorescu, L.; Bainbridge, R.; Dauncey, P.; Fulcher, J.; Hall, G.; Magnan, A.M.; Pesaresi, M.; Raymond, D.M.; Uchida, K.; Coughlan, J.A.; Harder, K.; Ilic, J.; Tomalin, I.R.; Garabedian, A.; Heintz, U.; Narain, M.; Nelson, J.; Sagir, S.; Speer, T.; Swanson, J.; Tersegno, D.; Watson-Daniels, J.; Chertok, M.; Conway, J.; Conway, R.; Flores, C.; Lander, R.; Pellett, D.; Ricci-Tam, F.; Squires, M.; Thomson, J.; Yohay, R.; Burt, K.; Ellison, J.; Hanson, G.; Malberti, M.; Olmedo, M.; Cerati, G.; Sharma, V.; Vartak, A.; Yagil, A.; Della Porta, G.Zevi; Dutta, V.; Gouskos, L.; Incandela, J.; Kyre, S.; McColl, N.; Mullin, S.; White, D.; Cumalat, J.P.; Ford, W.T.; Gaz, A.; Krohn, M.; Stenson, K.; Wagner, S.R.; Baldin, B.; Bolla, G.; Burkett, K.; Butler, J.; Cheung, H.; Chramowicz, J.; Christian, D.; Cooper, W.E.; Deptuch, G.; Derylo, G.; Gingu, C.; Gruenendahl, S.; Hasegawa, S.; Hoff, J.; Howell, J.; Hrycyk, M.; Jindariani, S.; Johnson, M.; Jung, A.; Joshi, U.; Kahlid, F.; Lei, C.M.; Lipton, R.; Liu, T.; Los, S.; Matulik, M.; Merkel, P.; Nahn, S.; Prosser, A.; Rivera, R.; Shenai, A.; Spiegel, L.; Tran, N.; Uplegger, L.; Voirin, E.; Yin, H.; Adams, M.R.; Berry, D.R.; Evdokimov, A.; Evdokimov, O.; Gerber, C.E.; Hofman, D.J.; Kapustka, B.K.; O'Brien, C.; Sandoval Gonzalez, D.I.; Trauger, H.; Turner, P.; Parashar, N.; Stupak, J., III; Bortoletto, D.; Bubna, M.; Hinton, N.; Jones, M.; Miller, D.H.; Shi, X.; Tan, P.; Baringer, P.; Bean, A.; Benelli, G.; Gray, J.; Majumder, D.; Noonan, D.; Sanders, S.; Stringer, R.; Ivanov, A.; Makouski, M.; Skhirtladze, N.; Taylor, R.; Anderson, I.; Fehling, D.; Gritsan, A.; Maksimovic, P.; Martin, C.; Nash, K.; Osherson, M.; Swartz, M.; Xiao, M.; Acosta, J.G.; Cremaldi, L.M.; Oliveros, S.; Perera, L.; Summers, D.; Bloom, K.; Bose, S.; Claes, D.R.; Dominguez, A.; Fangmeier, C.; Gonzalez Suarez, R.; Meier, F.; Monroy, J.; Hahn, K.; Sevova, S.; Sung, K.; Trovato, M.; Bartz, E.; Duggan, D.; Halkiadakis, E.; Lath, A.; Park, M.; Schnetzer, S.; Stone, R.; Walker, M.; Malik, S.; Mendez, H.; Ramirez Vargas, J.E.; Alyari, M.; Dolen, J.; George, J.; Godshalk, A.; Iashvili, I.; Kaisen, J.; Kharchilava, A.; Kumar, A.; Rappoccio, S.; Alexander, J.; Chaves, J.; Chu, J.; Dittmer, S.; Kaufman, G.; Mirman, N.; Ryd, A.; Salvati, E.; Skinnari, L.; Thom, J.; Thompson, J.; Tucker, J.; Winstrom, L.; Akgun, B.; Ecklund, K.M.; Nussbaum, T.; Zabel, J.; Betchart, B.; Demina, R.; Hindrichs, O.; Petrillo, G.; Eusebi, R.; Osipenkov, I.; Perloff, A.; Ulmer, K.A.; Delannoy, A.G.; D'Angelo, P.; Johns, W.

    2015-01-01

    The response of n+p silicon strip sensors to electrons from a Sr-90 source was measured using a multi-channel read-out system with 25 ns sampling time. The measurements were performed over a period of several weeks, during which the operating conditions were varied. The sensors were fabricated by Hamamatsu Photonics K.K. on 200 micrometer thick float-zone and magnetic-Czochralski silicon. Their pitch was 80 micrometer, and both p-stop and p-spray isolation of the n+ strips were studied. The electrons from the Sr-90 source were collimated to a spot with a full-width-at-half-maximum of 2 mm at the sensor surface, and the dose rate in the SiO2 at the maximum was about 50 Gy/d. After only a few hours of making measurements, significant changes in charge collection and charge sharing were observed. Annealing studies, with temperatures up to 80{\\deg}C and annealing times of 18 hours, showed that the changes can only be partially annealed. The observations can be qualitatively explained by the increase of the positi...

  11. Operation of transition-edge sensors with excess thermal noise

    International Nuclear Information System (INIS)

    Maasilta, I J; Kinnunen, K M; Nuottajaervi, A K; Leppaeniemi, J; Luukanen, A

    2006-01-01

    The superconducting transition-edge sensor (TES) is currently one of the most attractive choices for ultra-high resolution calorimetry in the keV x-ray band, and is being considered for future ESA and NASA missions. We have performed a study on the noise characteristics of Au/Ti bilayer TESs, at operating temperatures around ∼100 mK, with the SQUID readout at 1.5 K. Experimental results indicate that without modifications the back-action noise from the SQUID chip degrades the noise characteristics significantly. We present a simple and effective solution to the problem: by installing an extra shunt resistor which absorbs the excess radiation from the SQUID input, we have reduced the excess thermal (photon) noise power down by approximately a factor of five, allowing high resolution operation of the sensors

  12. Studying signal collection in the punch-through protection area of a silicon micro-strip sensor using a micro-focused X-ray beam

    CERN Document Server

    Poley, Anne-luise; The ATLAS collaboration

    2018-01-01

    For the Phase-II Upgrade of the ATLAS detector, a new, all-silicon tracker will be constructed in order to cope with the increased track density and radiation level of the High-Luminosity Large Hadron Collider. While silicon strip sensors are designed to minimise the fraction of dead material and maximise the active area of a sensor, concessions must be made to the requirements of operating a sensor in a particle physics detector. Sensor geometry features like the punch-through protection deviate from the standard sensor architecture and thereby affect the charge collection in that area. In order to study the signal collection of silicon strip sensors over their punch-through-protection area, ATLAS silicon strip sensors were scanned with a micro-focused X-ray beam at the Diamond Light Source. Due to the highly focused X-ray beam ($\\unit[2\\times3]{\\upmu\\text{m}}^2$) and the short average path length of an electron after interaction with an X-ray photon ($\\unit[\\leq2]{\\upmu\\text{m}}$), local signal collection i...

  13. Role of edge inclination in an optical microdisk resonator for label-free sensing.

    Science.gov (United States)

    Gandolfi, Davide; Ramiro-Manzano, Fernando; Rebollo, Francisco Javier Aparicio; Ghulinyan, Mher; Pucker, Georg; Pavesi, Lorenzo

    2015-02-26

    In this paper, we report on the measurement and modeling of enhanced optical refractometric sensors based on whispering gallery modes. The devices under test are optical microresonators made of silicon nitride on silicon oxide, which differ in their sidewall inclination angle. In our approach, these microresonators are vertically coupled to a buried waveguide with the aim of creating integrated and cost-effective devices. Device modeling shows that the optimization of the device is a delicate balance of the resonance quality factor and evanescent field overlap with the surrounding environment to analyze. By numerical simulations, we show that the microdisk thickness is critical to yield a high figure of merit for the sensor and that edge inclination should be kept as high as possible. We also show that bulk-sensing figures of merit as high as 1600 RIU(-1) (refractive index unit) are feasible.

  14. Simplified two-fluid current–voltage relation for superconductor transition-edge sensors

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Tian-Shun; Chen, Jun-Kang [Department of Optics and Optical Engineering, University of Science and Technology of China, Hefei City, Anhui Province 230026 (China); Zhang, Qing-Ya; Li, Tie-Fu; Liu, Jian-She [Institute of Microelectronics, Tsinghua University, Beijing 100084 (China); Chen, Wei, E-mail: weichen@tsinghua.edu.cn [Institute of Microelectronics, Tsinghua University, Beijing 100084 (China); Zhou, Xingxiang, E-mail: xizhou@ustc.edu.cn [Department of Optics and Optical Engineering, University of Science and Technology of China, Hefei City, Anhui Province 230026 (China)

    2013-11-21

    We propose a simplified current–voltage (IV) relation for the analysis and simulation of superconductor transition-edge sensor (TES) circuits. Compared to the conventional approach based on the effective TES resistance, our expression describes the device behavior more thoroughly covering the superconducting, transitional, and normal-state for TES currents in both directions. We show how to use our IV relation to perform small-signal analysis and derive the device's temperature and current sensitivities based on its physical parameters. We further demonstrate that we can use our IV relation to greatly simplify TES device modeling and make SPICE simulation of TES circuits easily accessible. We present some interesting results as examples of valuable simulations enabled by our IV relation. -- Highlights: •We propose an IV relation for superconductor transition-edge sensors (TES). •We derive the dependence of the sensitivity of TES on its physical parameters. •We use our IV relation for SPICE modeling of TES device. •We present simulation results using device model based on our IV relation.

  15. Simplified two-fluid current–voltage relation for superconductor transition-edge sensors

    International Nuclear Information System (INIS)

    Wang, Tian-Shun; Chen, Jun-Kang; Zhang, Qing-Ya; Li, Tie-Fu; Liu, Jian-She; Chen, Wei; Zhou, Xingxiang

    2013-01-01

    We propose a simplified current–voltage (IV) relation for the analysis and simulation of superconductor transition-edge sensor (TES) circuits. Compared to the conventional approach based on the effective TES resistance, our expression describes the device behavior more thoroughly covering the superconducting, transitional, and normal-state for TES currents in both directions. We show how to use our IV relation to perform small-signal analysis and derive the device's temperature and current sensitivities based on its physical parameters. We further demonstrate that we can use our IV relation to greatly simplify TES device modeling and make SPICE simulation of TES circuits easily accessible. We present some interesting results as examples of valuable simulations enabled by our IV relation. -- Highlights: •We propose an IV relation for superconductor transition-edge sensors (TES). •We derive the dependence of the sensitivity of TES on its physical parameters. •We use our IV relation for SPICE modeling of TES device. •We present simulation results using device model based on our IV relation

  16. Design, fabrication and characterization of the first AC-coupled silicon microstrip sensors in India

    CERN Document Server

    Aziz, T; Mohanty, G.B.; Patil, M.R.; Rao, K.K.; Rani, Y.R.; Rao, Y.P.P.; Behnamian, H.; Mersi, S.; Naseri, M.

    2014-01-01

    This paper reports the design, fabrication and characterization of single-sided silicon microstrip sensors with integrated biasing resistors and coupling capacitors, produced for the first time in India. We have first developed a prototype sensor with different width and pitch combinations on a single 4-inch wafer. After finding test procedures for characterizing these AC coupled sensors, we have chosen an optimal width-pitch combination and also fine-tuned various process parameters in order to produce sensors with the desired specifications.

  17. Ship Sensor Observations for Life on the Edge 2005 - Office of Ocean Exploration

    Data.gov (United States)

    National Oceanic and Atmospheric Administration, Department of Commerce — Hourly measurements made by selected ship sensors on the R/V Seward Johnson during the "Life on the Edge 2005" expedition sponsored by the National Oceanic and...

  18. Ship Sensor Observations for Life on the Edge 2004 - Office of Ocean Exploration

    Data.gov (United States)

    National Oceanic and Atmospheric Administration, Department of Commerce — Hourly measurements made by selected ship sensors on the R/V Seward Johnson during the "Life on the Edge 2004" expedition sponsored by the National Oceanic and...

  19. Studies of adhesives and metal contacts on silicon strip sensors for the ATLAS Inner Tracker

    CERN Document Server

    AUTHOR|(INSPIRE)INSPIRE-00407830; Moenig, Klaus

    2018-04-04

    This thesis presents studies investigating the use of adhesives on the active area of silicon strip sensors for the construction of silicon strip detector modules for the ATLAS Phase-II Upgrade. 60 ATLAS07 miniature sensors were tested using three UV cure glues in comparison with the current baseline glue (a non-conductive epoxy). The impact of irradiation on the chemical composition of all adhesives under investigation was studied using three standard methods for chemical analysis: quadrupole time-of-flight mass spectroscopy, gel permeability chromatography and gas chromatography combined with mass spectrometry (GC-MS). GC-MS analyses of glue sample extracts before and after irradiation showed molecule cross-linking and broken chemical bonds to different extents and allowed to quantify the radiation hardness of the adhesives under investigation. Probe station measurements were used to investigate electrical characteristics of sensors partially covered with adhesives in comparison with sensors without adhesiv...

  20. Energy-Aware Computation Offloading of IoT Sensors in Cloudlet-Based Mobile Edge Computing.

    Science.gov (United States)

    Ma, Xiao; Lin, Chuang; Zhang, Han; Liu, Jianwei

    2018-06-15

    Mobile edge computing is proposed as a promising computing paradigm to relieve the excessive burden of data centers and mobile networks, which is induced by the rapid growth of Internet of Things (IoT). This work introduces the cloud-assisted multi-cloudlet framework to provision scalable services in cloudlet-based mobile edge computing. Due to the constrained computation resources of cloudlets and limited communication resources of wireless access points (APs), IoT sensors with identical computation offloading decisions interact with each other. To optimize the processing delay and energy consumption of computation tasks, theoretic analysis of the computation offloading decision problem of IoT sensors is presented in this paper. In more detail, the computation offloading decision problem of IoT sensors is formulated as a computation offloading game and the condition of Nash equilibrium is derived by introducing the tool of a potential game. By exploiting the finite improvement property of the game, the Computation Offloading Decision (COD) algorithm is designed to provide decentralized computation offloading strategies for IoT sensors. Simulation results demonstrate that the COD algorithm can significantly reduce the system cost compared with the random-selection algorithm and the cloud-first algorithm. Furthermore, the COD algorithm can scale well with increasing IoT sensors.

  1. Transition edge sensor series array bolometer

    Energy Technology Data Exchange (ETDEWEB)

    Beyer, J, E-mail: joern.beyer@ptb.d [Physikalisch-Technische Bundesanstalt (PTB), Abbestrasse 2-12, D-10587 Berlin (Germany)

    2010-10-15

    A transition edge sensor series array (TES-SA) is an array of identical TESs that are connected in series by low-inductance superconducting wiring. The array elements are equally and well thermally coupled to the absorber and respond to changes in the absorber temperature in synchronization. The TES-SA total resistance increases compared to a single TES while the shape of the superconducting transition is preserved. We are developing a TES-SA with a large number, hundreds to thousands, of array elements with the goal of enabling the readout of a TES-based bolometer operated at 4.2 K with a semiconductor-based amplifier located at room temperature. The noise and dynamic performance of a TES-SA bolometer based on a niobium/aluminum bilayer is analyzed. It is shown that stable readout of the bolometer with a low-noise transimpedance amplifier is feasible.

  2. Transition edge sensor series array bolometer

    International Nuclear Information System (INIS)

    Beyer, J

    2010-01-01

    A transition edge sensor series array (TES-SA) is an array of identical TESs that are connected in series by low-inductance superconducting wiring. The array elements are equally and well thermally coupled to the absorber and respond to changes in the absorber temperature in synchronization. The TES-SA total resistance increases compared to a single TES while the shape of the superconducting transition is preserved. We are developing a TES-SA with a large number, hundreds to thousands, of array elements with the goal of enabling the readout of a TES-based bolometer operated at 4.2 K with a semiconductor-based amplifier located at room temperature. The noise and dynamic performance of a TES-SA bolometer based on a niobium/aluminum bilayer is analyzed. It is shown that stable readout of the bolometer with a low-noise transimpedance amplifier is feasible.

  3. arXiv Signal coupling to embedded pitch adapters in silicon sensors

    CERN Document Server

    Artuso, M.; Bezshyiko, I.; Blusk, S.; Bruendler, R.; Bugiel, S.; Dasgupta, R.; Dendek, A.; Dey, B.; Ely, S.; Lionetto, F.; Petruzzo, M.; Polyakov, I.; Rudolph, M.; Schindler, H.; Steinkamp, O.; Stone, S.

    2018-01-01

    We have examined the effects of embedded pitch adapters on signal formation in n-substrate silicon microstrip sensors with data from beam tests and simulation. According to simulation, the presence of the pitch adapter metal layer changes the electric field inside the sensor, resulting in slowed signal formation on the nearby strips and a pick-up effect on the pitch adapter. This can result in an inefficiency to detect particles passing through the pitch adapter region. All these effects have been observed in the beam test data.

  4. Review of superconducting transition-edge sensors for x-ray and gamma-ray spectroscopy

    International Nuclear Information System (INIS)

    Ullom, Joel N; Bennett, Douglas A

    2015-01-01

    We present a review of emerging x-ray and gamma-ray spectrometers based on arrays of superconducting transition-edge sensors (TESs). Special attention will be given to recent progress in TES applications and in understanding TES physics. (paper)

  5. Visual Sensor for Sterilization of Polymer Fixtures Using Embedded Mesoporous Silicon Photonic Crystals.

    Science.gov (United States)

    Kumeria, Tushar; Wang, Joanna; Chan, Nicole; Harris, Todd J; Sailor, Michael J

    2018-01-26

    A porous photonic crystal is integrated with a plastic medical fixture (IV connector hub) to provide a visual colorimetric sensor to indicate the presence or absence of alcohol used to sterilize the fixture. The photonic crystal is prepared in porous silicon (pSi) by electrochemical anodization of single crystal silicon, and the porosity and the stop band of the material is engineered such that the integrated device visibly changes color (green to red or blue to green) when infiltrated with alcohol. Two types of self-reporting devices are prepared and their performance compared: the first type involves heat-assisted fusion of a freestanding pSi photonic crystal to the connector end of a preformed polycarbonate hub, forming a composite where the unfilled portion of the pSi film acts as the sensor; the second involves generation of an all-polymer replica of the pSi photonic crystal by complete thermal infiltration of the pSi film and subsequent chemical dissolution of the pSi portion. Both types of sensors visibly change color when wetted with alcohol, and the color reverts to the original upon evaporation of the liquid. The sensor performance is verified using E. coli-infected samples.

  6. Design of air blast pressure sensors based on miniature silicon membrane and piezoresistive gauges

    Science.gov (United States)

    Riondet, J.; Coustou, A.; Aubert, H.; Pons, P.; Lavayssière, M.; Luc, J.; Lefrançois, A.

    2017-11-01

    Available commercial piezoelectric pressure sensors are not able to accurately reproduce the ultra-fast transient pressure occurring during an air blast experiment. In this communication a new pressure sensor prototype based on a miniature silicon membrane and piezoresistive gauges is reported for significantly improving the performances in terms of time response. Simulation results demonstrate the feasibility of a pressure transducer having a fundamental resonant frequency almost ten times greater than the commercial piezoelectric sensors one. The sensor uses a 5μm-thick SOI membrane and four P-type silicon gauges (doping level ≅ 1019 at/cm3) in Wheatstone bridge configuration. To obtain a good trade-off between the fundamental mechanical resonant frequency and pressure sensitivity values, the typical dimension of the rectangular membrane is fixed to 30μm x 90μm with gauge dimension of 1μm x 5μm. The achieved simulated mechanical resonant frequency of these configuration is greater than 40MHz with a sensitivity of 0.04% per bar.

  7. Position-sensitive transition-edge sensors

    International Nuclear Information System (INIS)

    Iyomoto, N.; Bandler, S.R.; Brekosky, R.P.; Chervenak, J.A.; Figueroa-Feliciano, E.; Finkbeiner, F.M.; Kelley, R.L.; Kilbourne, C.A.; Lindeman, M.A.; Murphy, K.; Porter, F.S.; Saab, T.; Sadleir, J.E.; Talley, D.J.

    2006-01-01

    We report the latest results from our development of Position-Sensitive Transition-edge sensors (PoSTs), which are one-dimensional imaging spectrometers. In PoSTs with segmented Au absorbers, we obtained 8eV energy resolution on K Kα lines, which is consistent to the baseline energy resolution and the design values, on all of the nine pixels, by choosing the best combination of the thermal conductance in absorbers and in links that connects the absorbers. The pulse decay time of 193μs is fast enough for our purpose. In a PoST with a continuous Bi/Cu absorber, by dividing the events into 63 effective pixels, we obtained energy resolutions of 16eV at the center 'pixel', which is comparable to the baseline energy resolution, and 33eV at the outer 'pixel'. The degradation of the energy resolution in the outer 'pixel' is due to position dependence, which we can cancel out by dividing the events into smaller 'pixels' when we have sufficient X-ray events

  8. Modeling of an Aged Porous Silicon Humidity Sensor Using ANN Technique

    Directory of Open Access Journals (Sweden)

    Tarikul ISLAM

    2006-10-01

    Full Text Available Porous silicon (PS sensor based on capacitive technique used for measuring relative humidity has the advantages of low cost, ease of fabrication with controlled structure and CMOS compatibility. But the response of the sensor is nonlinear function of humidity and suffers from errors due to aging and stability. One adaptive linear (ADALINE ANN model has been developed to model the behavior of the sensor with a view to estimate these errors and compensate them. The response of the sensor is represented by third order polynomial basis function whose coefficients are determined by the ANN technique. The drift in sensor output due to aging of PS layer is also modeled by adapting the weights of the polynomial function. ANN based modeling is found to be more suitable than conventional physical modeling of PS humidity sensor in changing environment and drift due to aging. It helps online estimation of nonlinearity as well as monitoring of the fault of the PS humidity sensor using the coefficients of the model.

  9. Silicon Sensor and Detector Developments for the CMS Tracker Upgrade

    CERN Document Server

    D'Alessandro, Raffaello

    2011-01-01

    CMS started a campaign to identify the future silicon sensor technology baseline for a new Tracker for the high-luminosity phase of LHC, coupled to a new effective way of providing tracking information to the experiment trigger. To this end a large variety of 6'' wafers was acquired in different thicknesses and technologies at HPK and new detector module designs were investigated. Detector thicknesses ranging from 50$\\mu$m to 300$\\mu$m are under investigation on float zone, magnetic Czochralski and epitaxial material both in n-in-p and p-in-n versions. P-stop and p-spray are explored as isolation technology for the n-in-p type sensors as well as the feasibility of double metal routing on 6'' wafers. Each wafer contains different structures to answer different questions, e.g. influence of geometry, Lorentz angle, radiation tolerance, annealing behaviour, validation of read-out schemes. Dedicated process test-structures, as well as diodes, mini-sensors, long and very short strip sensors and real pixel sensors ...

  10. Charge Losses in Silicon Sensors and Electric-Field Studies at the Si-SiO$_2$ Interface

    CERN Document Server

    Poehlsen, Thomas

    Electric fields and charge losses in silicon sensors before and after irradiation with x-rays, protons, neutrons or mixed irradiation are studied in charge-collection measurements. Electron-hole pairs ($eh$ pairs) are generated at different positions in the sensor using sub-ns pulsed laser light of different wavelengths. Light of 1063 nm, 830 nm and 660 nm wavelength is used to generate $eh$ pairs along the whole sensor depth, a few $\\mu$m below the surface and very close to the surface, respectively. Segmented p$^+$n silicon strip sensors are used to study the electric field below the SiO$_2$ separating the strip implants. The sensors are investigated before and after irradiation with 12 keV x-rays to a dose of 1 MGy. It is found that the electric field close to the Si-SiO$_2$ interface depends on both the irradiation dose and the biasing history. For the non-irradiated sensors the observed dependence of the electric field on biasing history and humidity is qualitatively as expected from simulations of the...

  11. Silicon Micromachined Sensor for Broadband Vibration Analysis

    Science.gov (United States)

    Gutierrez, Adolfo; Edmans, Daniel; Cormeau, Chris; Seidler, Gernot; Deangelis, Dave; Maby, Edward

    1995-01-01

    The development of a family of silicon based integrated vibration sensors capable of sensing mechanical resonances over a broad range of frequencies with minimal signal processing requirements is presented. Two basic general embodiments of the concept were designed and fabricated. The first design was structured around an array of cantilever beams and fabricated using the ARPA sponsored multi-user MEMS processing system (MUMPS) process at the Microelectronics Center of North Carolina (MCNC). As part of the design process for this first sensor, a comprehensive finite elements analysis of the resonant modes and stress distribution was performed using PATRAN. The dependence of strain distribution and resonant frequency response as a function of Young's modulus in the Poly-Si structural material was studied. Analytical models were also studied. In-house experimental characterization using optical interferometry techniques were performed under controlled low pressure conditions. A second design, intended to operate in a non-resonant mode and capable of broadband frequency response, was proposed and developed around the concept of a cantilever beam integrated with a feedback control loop to produce a null mode vibration sensor. A proprietary process was used to integrat a metal-oxide semiconductor (MOS) sensing device, with actuators and a cantilever beam, as part of a compatible process. Both devices, once incorporated as part of multifunction data acquisition and telemetry systems will constitute a useful system for NASA launch vibration monitoring operations. Satellite and other space structures can benefit from the sensor for mechanical condition monitoring functions.

  12. Investigation of properties of novel silicon pixel assemblies employing thin n-in-p sensors and 3D-integration

    International Nuclear Information System (INIS)

    Weigell, Philipp

    2013-01-01

    Until the end of the 2020 decade the LHC programme will be defining the high energy frontier of particle physics. During this time, three upgrade steps of the accelerator are currently planned to further increase the luminosity and energy reach. In the course of these upgrades the specifications of several parts of the current LHC detectors will be exceeded. Especially, the innermost tracking detectors are challenged by the increasing track densities and the radiation damage. This thesis focuses on the implications for the ATLAS experiment. Here, around 2021/2, after having collected an integrated luminosity of around 300 fb -1 , the silicon and gas detector components of the inner tracker will reach the end of their lifetime and will need to be replaced to ensure sufficient performance for continued running - especially if the luminosity is raised to about 5 x 10 35 cm -2 s -1 as currently planned. An all silicon inner detector is foreseen to be installed. This upgrade demands cost effective pixel assemblies with a minimal material budget, a larger active area fraction as compared to the current detectors, and a higher granularity. Furthermore, the assemblies must be able to withstand received fluences up to 2 . 10 16 n eq /cm 2 . A new pixel assembly concept answering the challenges posed by the high instantaneous luminosities is investigated in this thesis. It employs five novel technologies, namely n-in-p pixel sensors, thin pixel sensors, slim edges with or without implanted sensor sides, and 3D-integration incorporating a new interconnection technology, named Solid Liquid InterDiffusion (SLID) as well as Inter-Chip-Vias (ICVs). n-in-p sensors are cost-effective, since they only need patterned processing on one side. Their performance before and after irradiation is investigated and compared to results obtained with currently used n-in-n sensors. Reducing the thickness of the sensors lowers the amount of multiple scattering within the tracking system and leads

  13. Investigation of properties of novel silicon pixel assemblies employing thin n-in-p sensors and 3D-integration

    Energy Technology Data Exchange (ETDEWEB)

    Weigell, Philipp

    2013-01-15

    Until the end of the 2020 decade the LHC programme will be defining the high energy frontier of particle physics. During this time, three upgrade steps of the accelerator are currently planned to further increase the luminosity and energy reach. In the course of these upgrades the specifications of several parts of the current LHC detectors will be exceeded. Especially, the innermost tracking detectors are challenged by the increasing track densities and the radiation damage. This thesis focuses on the implications for the ATLAS experiment. Here, around 2021/2, after having collected an integrated luminosity of around 300 fb{sup -1}, the silicon and gas detector components of the inner tracker will reach the end of their lifetime and will need to be replaced to ensure sufficient performance for continued running - especially if the luminosity is raised to about 5 x 10{sup 35} cm{sup -2}s{sup -1} as currently planned. An all silicon inner detector is foreseen to be installed. This upgrade demands cost effective pixel assemblies with a minimal material budget, a larger active area fraction as compared to the current detectors, and a higher granularity. Furthermore, the assemblies must be able to withstand received fluences up to 2 . 10{sup 16} n{sub eq}/cm{sup 2}. A new pixel assembly concept answering the challenges posed by the high instantaneous luminosities is investigated in this thesis. It employs five novel technologies, namely n-in-p pixel sensors, thin pixel sensors, slim edges with or without implanted sensor sides, and 3D-integration incorporating a new interconnection technology, named Solid Liquid InterDiffusion (SLID) as well as Inter-Chip-Vias (ICVs). n-in-p sensors are cost-effective, since they only need patterned processing on one side. Their performance before and after irradiation is investigated and compared to results obtained with currently used n-in-n sensors. Reducing the thickness of the sensors lowers the amount of multiple scattering

  14. Electronic and local atomistic structure of MgSiO3 glass under pressure: a study of X-ray Raman scattering at the silicon and magnesium L-edges

    Science.gov (United States)

    Fukui, Hiroshi; Hiraoka, Nozomu

    2018-02-01

    We applied X-ray Raman scattering technique to MgSiO3 glass, a precursor to magnesium silicate melts, with respect to magnesium and silicon under high-pressure conditions as well as some polycrystalline phases of MgSiO3 at ambient conditions. We also performed ab initio calculations to interpret the X-ray Raman spectra. Experimentally obtained silicon L-edge spectra indicate that the local environment around silicon started changing at pressure above 10 GPa, where the electronic structure of oxygen is known to change. In contrast, the shape of the magnesium L-edge spectrum changed below 10 GPa. This indicates that the magnesium sites in MgSiO3 glass first distort and that the local structure around magnesium shows a wide variation under pressure. The framework structure consisting of silicon and oxygen changed above 10 GPa, where the coordination number of silicon was more than four. Our results imply that 6-oxygen-coordinated silicon was formed above 20 GPa.

  15. Stress modeling of microdiaphragm pressure sensors

    Science.gov (United States)

    Tack, P. C.; Busta, H. H.

    1986-01-01

    A finite element program analysis was used to model the stress distribution of two monocrystalline silicon diaphragm pressure sensors. One configuration consists of an anisotropically backside etched diaphragm into a 250 micron thick, (100) oriented, silicon wafer. The diaphragm and total chip dimensions are given. The device is rigidly clamped on the back to a support substrate. Another configuration consists of a monocrystalline, (100), microdiaphragm which is formed on top of the wafer and whose area is reduced by a factor of 25 over the first configuration. The diaphragm is rigidly clamped to the silicon wafer. The stresses were calculated at a gauge pressure of 300 mm Hg and used to estimate the piezoresistive responses of resistor elements which were placed parallel and perpendicular near the diaphragm edges.

  16. Optimization and validation of highly selective microfluidic integrated silicon nanowire chemical sensor

    Science.gov (United States)

    Ehfaed, Nuri. A. K. H.; Bathmanathan, Shillan A. L.; Dhahi, Th S.; Adam, Tijjani; Hashim, Uda; Noriman, N. Z.

    2017-09-01

    The study proposed characterization and optimization of silicon nanosensor for specific detection of heavy metal. The sensor was fabricated in-house and conventional photolithography coupled with size reduction via dry etching process in an oxidation furnace. Prior to heavy metal heavy metal detection, the capability to aqueous sample was determined utilizing serial DI water at various. The sensor surface was surface modified with Organofunctional alkoxysilanes (3-aminopropyl) triethoxysilane (APTES) to create molecular binding chemistry. This has allowed interaction between heavy metals being measured and the sensor component resulting in increasing the current being measured. Due to its, excellent detection capabilities, this sensor was able to identify different group heavy metal species. The device was further integrated with sub-50 µm for chemical delivery.

  17. Silicon Carbide-Based Hydrogen Gas Sensors for High-Temperature Applications

    Directory of Open Access Journals (Sweden)

    Sangchoel Kim

    2013-10-01

    Full Text Available We investigated SiC-based hydrogen gas sensors with metal-insulator-semiconductor (MIS structure for high temperature process monitoring and leak detection applications in fields such as the automotive, chemical and petroleum industries. In this work, a thin tantalum oxide (Ta2O5 layer was exploited with the purpose of sensitivity improvement, because tantalum oxide has good stability at high temperature with high permeability for hydrogen gas. Silicon carbide (SiC was used as a substrate for high-temperature applications. We fabricated Pd/Ta2O5/SiC-based hydrogen gas sensors, and the dependence of their I-V characteristics and capacitance response properties on hydrogen concentrations were analyzed in the temperature range from room temperature to 500 °C. According to the results, our sensor shows promising performance for hydrogen gas detection at high temperatures.

  18. Optimizing Floating Guard Ring Designs for FASPAX N-in-P Silicon Sensors

    Energy Technology Data Exchange (ETDEWEB)

    Shin, Kyung-Wook [Argonne; Bradford, Robert [Argonne; Lipton, Ronald [Fermilab; Deptuch, Gregory [Fermilab; Fahim, Farah [Fermilab; Madden, Tim [Argonne; Zimmerman, Tom [Fermilab

    2016-10-06

    FASPAX (Fermi-Argonne Semiconducting Pixel Array X-ray detector) is being developed as a fast integrating area detector with wide dynamic range for time resolved applications at the upgraded Advanced Photon Source (APS.) A burst mode detector with intended $\\mbox{13 $MHz$}$ image rate, FASPAX will also incorporate a novel integration circuit to achieve wide dynamic range, from single photon sensitivity to $10^{\\text{5}}$ x-rays/pixel/pulse. To achieve these ambitious goals, a novel silicon sensor design is required. This paper will detail early design of the FASPAX sensor. Results from TCAD optimization studies, and characterization of prototype sensors will be presented.

  19. Characterization, Modeling and Design Parameters Identification of Silicon Carbide Junction Field Effect Transistor for Temperature Sensor Applications

    Directory of Open Access Journals (Sweden)

    Sofiane Khachroumi

    2010-01-01

    Full Text Available Sensor technology is moving towards wide-band-gap semiconductors providing high temperature capable devices. Indeed, the higher thermal conductivity of silicon carbide, (three times more than silicon, permits better heat dissipation and allows better cooling and temperature management. Though many temperature sensors have already been published, little endeavours have been invested in the study of silicon carbide junction field effect devices (SiC-JFET as a temperature sensor. SiC-JFETs devices are now mature enough and it is close to be commercialized. The use of its specific properties versus temperatures is the major focus of this paper. The SiC-JFETs output current-voltage characteristics are characterized at different temperatures. The saturation current and its on-resistance versus temperature are successfully extracted. It is demonstrated that these parameters are proportional to the absolute temperature. A physics-based model is also presented. Relationships between on-resistance and saturation current versus temperature are introduced. A comparative study between experimental data and simulation results is conducted. Important to note, the proposed model and the experimental results reflect a successful agreement as far as a temperature sensor is concerned.

  20. Non-axisymmetric flexural vibrations of free-edge circular silicon wafers

    Energy Technology Data Exchange (ETDEWEB)

    Dmitriev, A.V., E-mail: dmitriev@hbar.phys.msu.ru; Gritsenko, D.S.; Mitrofanov, V.P., E-mail: mitr@hbar.phys.msu.ru

    2014-02-07

    Non-axisymmetric flexural vibrations of circular silicon (111) wafers are investigated. The modes with azimuthal index 2⩽k⩽30 are electrostatically excited and monitored by a capacitive sensor. The splitting of the mode frequencies associated with imperfection of the wafer is observed. The measured loss factors for the modes with 6≲k≲26 are close to those calculated according to the thermoelastic damping theory, while clamping losses likely dominate for k≲6, and surface losses at the level of inverse Q-factor Q{sup −1}≈4×10{sup −6} prevail for the modes with large k. The modes demonstrate nonlinear behavior of mainly geometrical origin at large amplitudes.

  1. Just-in-Time Correntropy Soft Sensor with Noisy Data for Industrial Silicon Content Prediction.

    Science.gov (United States)

    Chen, Kun; Liang, Yu; Gao, Zengliang; Liu, Yi

    2017-08-08

    Development of accurate data-driven quality prediction models for industrial blast furnaces encounters several challenges mainly because the collected data are nonlinear, non-Gaussian, and uneven distributed. A just-in-time correntropy-based local soft sensing approach is presented to predict the silicon content in this work. Without cumbersome efforts for outlier detection, a correntropy support vector regression (CSVR) modeling framework is proposed to deal with the soft sensor development and outlier detection simultaneously. Moreover, with a continuous updating database and a clustering strategy, a just-in-time CSVR (JCSVR) method is developed. Consequently, more accurate prediction and efficient implementations of JCSVR can be achieved. Better prediction performance of JCSVR is validated on the online silicon content prediction, compared with traditional soft sensors.

  2. Realization of an integrated VDF/TrFE copolymer-on-silicon pyroelectric sensor

    NARCIS (Netherlands)

    Setiadi, D.; Setiadi, D.; Regtien, Paulus P.L.; Sarro, P.M.

    1995-01-01

    An integrated pyroelectric sensor based on a vinylidene fluoride trifluoroethylene (VDF/TrFE) copolymer is presented. A silicon substrate that contains FET readout electronics is coated with the VDF/TrFE copolymer film using a spin-coating technique. On-chip poling of the copolymer has been applied

  3. Semantic Edge Based Disparity Estimation Using Adaptive Dynamic Programming for Binocular Sensors.

    Science.gov (United States)

    Zhu, Dongchen; Li, Jiamao; Wang, Xianshun; Peng, Jingquan; Shi, Wenjun; Zhang, Xiaolin

    2018-04-03

    Disparity calculation is crucial for binocular sensor ranging. The disparity estimation based on edges is an important branch in the research of sparse stereo matching and plays an important role in visual navigation. In this paper, we propose a robust sparse stereo matching method based on the semantic edges. Some simple matching costs are used first, and then a novel adaptive dynamic programming algorithm is proposed to obtain optimal solutions. This algorithm makes use of the disparity or semantic consistency constraint between the stereo images to adaptively search parameters, which can improve the robustness of our method. The proposed method is compared quantitatively and qualitatively with the traditional dynamic programming method, some dense stereo matching methods, and the advanced edge-based method respectively. Experiments show that our method can provide superior performance on the above comparison.

  4. \\title{Development of Radiation Damage Models for Irradiated Silicon Sensors Using TCAD Tools}

    CERN Document Server

    Bhardwaj, Ashutosh; Lalwani, Kavita; Ranjan, Kirti; Printz, Martin; Ranjeet, Ranjeet; Eber, Robert; Eichhorn, Thomas; Peltola, Timo Hannu Tapani

    2014-01-01

    Abstract. During the high luminosity upgrade of the LHC (HL-LHC) the CMS tracking system will face a more intense radiation environment than the present system was designed for. In order to design radiation tolerant silicon sensors for the future CMS tracker upgrade it is fundamental to complement the measurement with device simulation. This will help in both the understanding of the device performance and in the optimization of the design parameters. One of the important ingredients of the device simulation is to develop a radiation damage model incorporating both bulk and surface damage. In this paper we will discuss the development of a radiation damage model by using commercial TCAD packages (Silvaco and Synopsys), which successfully reproduce the recent measurements like leakage current, depletion voltage, interstrip capacitance and interstrip resistance, and provides an insight into the performance of irradiated silicon strip sensors.

  5. The ATLAS Planar Pixel Sensor R and D project

    International Nuclear Information System (INIS)

    Beimforde, M.

    2011-01-01

    Within the R and D project on Planar Pixel Sensor Technology for the ATLAS inner detector upgrade, the use of planar pixel sensors for highest fluences as well as large area silicon detectors is investigated. The main research goals are optimizing the signal size after irradiations, reducing the inactive sensor edges, adjusting the readout electronics to the radiation induced decrease of the signal sizes, and reducing the production costs. Planar n-in-p sensors have been irradiated with neutrons and protons up to fluences of 2x10 16 n eq /cm 2 and 1x10 16 n eq /cm 2 , respectively, to study the collected charge as a function of the irradiation dose received. Furthermore comparisons of irradiated standard 300μm and thin 140μm sensors will be presented showing an increase of signal sizes after irradiation in thin sensors. Tuning studies of the present ATLAS front end electronics show possibilities to decrease the discriminator threshold of the present FE-I3 read out chips to less than 1500 electrons. In the present pixel detector upgrade scenarios a flat stave design for the innermost layers requires reduced inactive areas at the sensor edges to ensure low geometric inefficiencies. Investigations towards achieving slim edges presented here show possibilities to reduce the width of the inactive area to less than 500μm. Furthermore, a brief overview of present simulation activities within the Planar Pixel R and D project is given.

  6. Impact of low-dose electron irradiation on n{sup +}p silicon strip sensors

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    2015-12-11

    The response of n{sup +}p silicon strip sensors to electrons from a {sup 90}Sr source was measured using a multi-channel read-out system with 25 ns sampling time. The measurements were performed over a period of several weeks, during which the operating conditions were varied. The sensors were fabricated by Hamamatsu Photonics on 200 μm thick float-zone and magnetic-Czochralski silicon. Their pitch was 80 μm, and both p-stop and p-spray isolation of the n{sup +} strips were studied. The electrons from the {sup 90}Sr source were collimated to a spot with a full-width-at-half-maximum of 2 mm at the sensor surface, and the dose rate in the SiO{sub 2} at the maximum was about 50 Gy(SiO{sub 2})/d. After only a few hours of making measurements, significant changes in charge collection and charge sharing were observed. Annealing studies, with temperatures up to 80 °C and annealing times of 18 h showed that the changes can only be partially annealed. The observations can be qualitatively explained by the increase of the positive oxide-charge density due to the ionization of the SiO{sub 2} by the radiation from the β source. TCAD simulations of the electric field in the sensor for different oxide-charge densities and different boundary conditions at the sensor surface support this explanation. The relevance of the measurements for the design of n{sup +}p strip sensors is discussed.

  7. Design Parameter Optimization of a Silicon-Based Grating Waveguide for Performance Improvement in Biochemical Sensor Application.

    Science.gov (United States)

    Hong, Yoo-Seung; Cho, Chun-Hyung; Sung, Hyuk-Kee

    2018-03-05

    We performed numerical analysis and design parameter optimization of a silicon-based grating waveguide refractive index (RI) sensor. The performance of the grating waveguide RI sensor was determined by the full-width at half-maximum (FWHM) and the shift in the resonance wavelength in the transmission spectrum. The transmission extinction, a major figure-of-merit of an RI sensor that reflects both FWHM and resonance shift performance, could be significantly improved by the proper determination of three major grating waveguide parameters: duty ratio, grating period, and etching depth. We analyzed the transmission characteristics of the grating waveguide under various design parameter conditions using a finite-difference time domain method. We achieved a transmission extinction improvement of >26 dB under a given bioenvironmental target change by the proper choice of the design procedure and parameters. This design procedure and choice of appropriate parameters would enable the widespread application of silicon-based grating waveguide in high-performance RI biochemical sensor.

  8. The silicon tracking system of the CBM experiment at FAIR. Development of microstrip sensors and signal transmission lines for a low-mass, low-noise system

    International Nuclear Information System (INIS)

    Singla, Minni

    2014-01-01

    In this thesis, different physical and electrical aspects of silicon microstrip sensors and low-mass multi-line readout cables have been investigated. These silicon microstrip sensors and readout cables will be used in the Silicon Tracking System (STS) of the fixed-target heavy-ion Compressed Baryonic Matter (CBM) experiment which is under development at the upcoming Facility for Antiproton and ion Research (FAIR) in Darmstadt, Germany. The highly segmented low-mass tracking system is a central CBM detector system to resolve the high tracking densities of charged particles originating from beam-target interactions. Considering the low material budget requirement the double-sided silicon microstrip detectors have been used in several planar tracking stations. The readout electronics is planned to be installed at the periphery of the tracking stations along with the cooling system. Low-mass multi-line readout cables shall bridge the distance between the microstrip sensors and the readout electronics. The CBM running operational scenario suggests that some parts of the tracking stations are expected to be exposed to a total integrated particle fluence of the order of 1 x 10 14 n eq /cm 2 . After 1 x 10 14 n eq /cm 2 the damaged modules in the tracking stations will be replaced. Thus radiation hard sensor is an important requirement for the sensors. Moreover, to cope with the high reaction rates, free-streaming (triggerless) readout electronics with online event reconstruction must be used which require high signal-to-noise (SNR) ratio (i.e., high signal efficiency, low noise contributions). Therefore, reduction in noise is a major goal of the sensor and cable development. For better insight into the different aspects of the silicon microstrip sensors and multi-line readout cables, the simulation study has been performed using SYNOPSYS TCAD tools. 3D models of the silicon microstrip sensors and the readout cables were implemented which is motivated by the stereoscopic

  9. Single-photon light detection with transition-edge sensors

    International Nuclear Information System (INIS)

    Rajteri, M.; Taralli, E.; Portesi, C.; Monticone, E.

    2008-01-01

    Transition-Edge Sensors (TESs) are micro calorimeters that measure the energy of incident single-photons by the resistance increase of a superconducting film biased within the superconducting-to-normal transition. TES are able to detect single photons from x-ray to IR with an intrinsic energy resolution and photon-number discrimination capability. Metrological, astronomical and quantum communication applications are the fields where these properties can be particularly important. In this work, we report about characterization of different TESs based on Ti films. Single-photons have been detected from 200 nm to 800 nm working at T c ∼ 100 m K. Using a pulsed laser at 690 nm we have demonstrated the capability to resolve up to five photons.

  10. Measurements of the reverse current of highly irradiated silicon sensors to determine the effective energy and current related damage rate

    Science.gov (United States)

    Wiehe, Moritz; Wonsak, S.; Kuehn, S.; Parzefall, U.; Casse, G.

    2018-01-01

    The reverse current of irradiated silicon sensors leads to self heating of the sensor and degrades the signal to noise ratio of a detector. Precise knowledge of the expected reverse current during detector operation is crucial for planning and running experiments in High Energy Physics. The dependence of the reverse current on sensor temperature and irradiation fluence is parametrized by the effective energy and the current related damage rate, respectively. In this study 18 n-in-p mini silicon strip sensors from companies Hamamatsu Photonics and Micron Semiconductor Ltd. were deployed. Measurements of the reverse current for different bias voltages were performed at temperatures of -32 ° C, -27 ° C and -23 ° C. The sensors were irradiated with reactor neutrons in Ljubljana to fluences ranging from 2 × 1014neq /cm2 to 2 × 1016neq /cm2. The measurements were performed directly after irradiation and after 10 and 30 days of room temperature annealing. The aim of the study presented in this paper is to investigate the reverse current of silicon sensors for high fluences of up to 2 × 1016neq /cm2 and compare the measurements to the parametrization models.

  11. Design and TCAD simulation of planar p-on-n active-edge pixel sensors for the next generation of FELs

    Energy Technology Data Exchange (ETDEWEB)

    Dalla Betta, G.-F., E-mail: gianfranco.dallabetta@unitn.it [Università di Trento, Dipartimento di Ingegneria Industriale, I-38123 Trento (Italy); TIFPA INFN, I-38123 Trento (Italy); Batignani, G. [Università di Pisa, Dipartimento di Fisica, I-56127 Pisa (Italy); INFN, Sezione di Pisa, I-56127 Pisa (Italy); Benkechkache, M.A. [TIFPA INFN, I-38123 Trento (Italy); University Constantine 1, Department of Electronics in the Science and Technology Faculty, I-25017 Constantine (Algeria); Bettarini, S.; Casarosa, G. [Università di Pisa, Dipartimento di Fisica, I-56127 Pisa (Italy); INFN, Sezione di Pisa, I-56127 Pisa (Italy); Comotti, D. [Università di Pavia, Dipartimento di Ingegneria Industriale e dell' Informazione, I-27100 Pavia (Italy); INFN Sezione di Pavia, I-27100 Pavia (Italy); Fabris, L. [INFN Sezione di Pavia, I-27100 Pavia (Italy); Università di Bergamo, Dipartimento di Ingegneria e Scienze Applicate, I-24044 Dalmine (Italy); Forti, F. [Università di Pisa, Dipartimento di Fisica, I-56127 Pisa (Italy); INFN, Sezione di Pisa, I-56127 Pisa (Italy); Grassi, M. [Università di Pavia, Dipartimento di Ingegneria Industriale e dell' Informazione, I-27100 Pavia (Italy); INFN Sezione di Pavia, I-27100 Pavia (Italy); Latreche, S. [University Constantine 1, Department of Electronics in the Science and Technology Faculty, I-25017 Constantine (Algeria); Lodola, L.; Malcovati, P. [Università di Pavia, Dipartimento di Ingegneria Industriale e dell' Informazione, I-27100 Pavia (Italy); INFN Sezione di Pavia, I-27100 Pavia (Italy); Manghisoni, M. [INFN Sezione di Pavia, I-27100 Pavia (Italy); Università di Bergamo, Dipartimento di Ingegneria e Scienze Applicate, I-24044 Dalmine (Italy); and others

    2016-07-11

    We report on the design and TCAD simulations of planar p-on-n sensors with active edge aimed at a four-side buttable X-ray detector module for future FEL applications. Edge terminations with different number of guard rings were designed to find the best trade-off between breakdown voltage and border gap size. The methodology of the sensor design, the optimization of the most relevant parameters to maximize the breakdown voltage and the final layout are described.

  12. Design and TCAD simulation of planar p-on-n active-edge pixel sensors for the next generation of FELs

    International Nuclear Information System (INIS)

    Dalla Betta, G.-F.; Batignani, G.; Benkechkache, M.A.; Bettarini, S.; Casarosa, G.; Comotti, D.; Fabris, L.; Forti, F.; Grassi, M.; Latreche, S.; Lodola, L.; Malcovati, P.; Manghisoni, M.

    2016-01-01

    We report on the design and TCAD simulations of planar p-on-n sensors with active edge aimed at a four-side buttable X-ray detector module for future FEL applications. Edge terminations with different number of guard rings were designed to find the best trade-off between breakdown voltage and border gap size. The methodology of the sensor design, the optimization of the most relevant parameters to maximize the breakdown voltage and the final layout are described.

  13. X-ray radiation damage studies and design of a silicon pixel sensor for science at the XFEL

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Jiaguo

    2013-06-15

    Experiments at the European X-ray Free Electron Laser (XFEL) require silicon pixel sensors which can withstand X-ray doses up to 1 GGy. For the investigation of Xray radiation damage up to these high doses, MOS capacitors and gate-controlled diodes built on high resistivity n-doped silicon with crystal orientations left angle 100 right angle and left angle 111 right angle produced by four vendors, CiS, Hamamatsu, Canberra and Sintef have been irradiated with 12 keV X-rays at the DESY DORIS III synchrotron-light source. Using capacitance/ conductance-voltage, current-voltage and thermal dielectric relaxation current measurements, the densities of oxide charges and interface traps at the Si-SiO{sub 2} interface, and the surface-current densities have been determined as function of dose. Results indicate that the dose dependence of the oxide-charge density, the interface-trap density and the surface-current density depend on the crystal orientation and producer. In addition, the influence of the voltage applied to the gates of the MOS capacitor and the gate-controlled diode during X-ray irradiation on the oxide-charge density, the interface-trap density and the surface-current density has been investigated at doses of 100 kGy and 100 MGy. It is found that both strongly depend on the gate voltage if the electric field in the oxide points from the surface of the SiO{sub 2} to the Si-SiO{sub 2} interface. To verify the long-term stability of irradiated silicon sensors, annealing studies have been performed at 60 C and 80 C on MOS capacitors and gate-controlled diodes irradiated to 5 MGy as well, and the annealing kinetics of oxide charges and surface current were determined. Moreover, the macroscopic electrical properties of segmented sensors have slao been investigated as function of dose. It is found that the defects introduced by X-rays increase the full depletion voltage, the surface leakage current and the inter-electrode capacitance of the segmented sensor. An

  14. X-ray radiation damage studies and design of a silicon pixel sensor for science at the XFEL

    International Nuclear Information System (INIS)

    Zhang, Jiaguo

    2013-06-01

    Experiments at the European X-ray Free Electron Laser (XFEL) require silicon pixel sensors which can withstand X-ray doses up to 1 GGy. For the investigation of Xray radiation damage up to these high doses, MOS capacitors and gate-controlled diodes built on high resistivity n-doped silicon with crystal orientations left angle 100 right angle and left angle 111 right angle produced by four vendors, CiS, Hamamatsu, Canberra and Sintef have been irradiated with 12 keV X-rays at the DESY DORIS III synchrotron-light source. Using capacitance/ conductance-voltage, current-voltage and thermal dielectric relaxation current measurements, the densities of oxide charges and interface traps at the Si-SiO 2 interface, and the surface-current densities have been determined as function of dose. Results indicate that the dose dependence of the oxide-charge density, the interface-trap density and the surface-current density depend on the crystal orientation and producer. In addition, the influence of the voltage applied to the gates of the MOS capacitor and the gate-controlled diode during X-ray irradiation on the oxide-charge density, the interface-trap density and the surface-current density has been investigated at doses of 100 kGy and 100 MGy. It is found that both strongly depend on the gate voltage if the electric field in the oxide points from the surface of the SiO 2 to the Si-SiO 2 interface. To verify the long-term stability of irradiated silicon sensors, annealing studies have been performed at 60 C and 80 C on MOS capacitors and gate-controlled diodes irradiated to 5 MGy as well, and the annealing kinetics of oxide charges and surface current were determined. Moreover, the macroscopic electrical properties of segmented sensors have slao been investigated as function of dose. It is found that the defects introduced by X-rays increase the full depletion voltage, the surface leakage current and the inter-electrode capacitance of the segmented sensor. An electron

  15. Characterisation of irradiated thin silicon sensors for the CMS phase II pixel upgrade

    Energy Technology Data Exchange (ETDEWEB)

    Adam, W.; Bergauer, T.; Brondolin, E. [Institut fuer Hochenergiephysik, Vienna (Austria); and others

    2017-08-15

    The high luminosity upgrade of the Large Hadron Collider, foreseen for 2026, necessitates the replacement of the CMS experiment's silicon tracker. The innermost layer of the new pixel detector will be exposed to severe radiation, corresponding to a 1 MeV neutron equivalent fluence of up to Φ{sub eq} = 2 x 10{sup 16} cm{sup -2}, and an ionising dose of ∼5 MGy after an integrated luminosity of 3000 fb{sup -1}. Thin, planar silicon sensors are good candidates for this application, since the degradation of the signal produced by traversing particles is less severe than for thicker devices. In this paper, the results obtained from the characterisation of 100 and 200 μm thick p-bulk pad diodes and strip sensors irradiated up to fluences of Φ{sub eq} = 1.3 x 10{sup 16} cm{sup -2} are shown. (orig.)

  16. Hydrogenated Amorphous Silicon Sensor Deposited on Integrated Circuit for Radiation Detection

    CERN Document Server

    Despeisse, M; Jarron, P; Kaplon, J; Moraes, D; Nardulli, A; Powolny, F; Wyrsch, N

    2008-01-01

    Radiation detectors based on the deposition of a 10 to 30 mum thick hydrogenated amorphous silicon (a-Si:H) sensor directly on top of integrated circuits have been developed. The performance of this detector technology has been assessed for the first time in the context of particle detectors. Three different circuits were designed in a quarter micron CMOS technology for these studies. The so-called TFA (Thin-Film on ASIC) detectors obtained after deposition of a-Si:H sensors on the developed circuits are presented. High internal electric fields (104 to 105 V/cm) can be built in the a-Si:H sensor and overcome the low mobility of electrons and holes in this amorphous material. However, the deposited sensor's leakage current at such fields turns out to be an important parameter which limits the performance of a TFA detector. Its detailed study is presented as well as the detector's pixel segmentation. Signal induction by generated free carrier motion in the a-Si:H sensor has been characterized using a 660 nm pul...

  17. Asymmetric resonance frequency analysis of in-plane electrothermal silicon cantilevers for nanoparticle sensors

    Science.gov (United States)

    Bertke, Maik; Hamdana, Gerry; Wu, Wenze; Marks, Markus; Suryo Wasisto, Hutomo; Peiner, Erwin

    2016-10-01

    The asymmetric resonance frequency analysis of silicon cantilevers for a low-cost wearable airborne nanoparticle detector (Cantor) is described in this paper. The cantilevers, which are operated in the fundamental in-plane resonance mode, are used as a mass-sensitive microbalance. They are manufactured out of bulk silicon, containing a full piezoresistive Wheatstone bridge and an integrated thermal heater for reading the measurement output signal and stimulating the in-plane excitation, respectively. To optimize the sensor performance, cantilevers with different cantilever geometries are designed, fabricated and characterized. Besides the resonance frequency, the quality factor (Q) of the resonance curve has a high influence concerning the sensor sensitivity. Because of an asymmetric resonance behaviour, a novel fitting function and method to extract the Q is created, different from that of the simple harmonic oscillator (SHO). For testing the sensor in a long-term frequency analysis, a phase- locked loop (PLL) circuit is employed, yielding a frequency stability of up to 0.753 Hz at an Allan variance of 3.77 × 10-6. This proposed asymmetric resonance frequency analysis method is expected to be further used in the process development of the next-generation Cantor.

  18. Asymmetric resonance frequency analysis of in-plane electrothermal silicon cantilevers for nanoparticle sensors

    International Nuclear Information System (INIS)

    Bertke, Maik; Hamdana, Gerry; Wu, Wenze; Marks, Markus; Wasisto, Hutomo Suryo; Peiner, Erwin

    2016-01-01

    The asymmetric resonance frequency analysis of silicon cantilevers for a low-cost wearable airborne nanoparticle detector (Cantor) is described in this paper. The cantilevers, which are operated in the fundamental in-plane resonance mode, are used as a mass-sensitive microbalance. They are manufactured out of bulk silicon, containing a full piezoresistive Wheatstone bridge and an integrated thermal heater for reading the measurement output signal and stimulating the in-plane excitation, respectively. To optimize the sensor performance, cantilevers with different cantilever geometries are designed, fabricated and characterized. Besides the resonance frequency, the quality factor ( Q ) of the resonance curve has a high influence concerning the sensor sensitivity. Because of an asymmetric resonance behaviour, a novel fitting function and method to extract the Q is created, different from that of the simple harmonic oscillator (SHO). For testing the sensor in a long-term frequency analysis, a phase- locked loop (PLL) circuit is employed, yielding a frequency stability of up to 0.753 Hz at an Allan variance of 3.77 × 10 -6 . This proposed asymmetric resonance frequency analysis method is expected to be further used in the process development of the next-generation Cantor. (paper)

  19. Molybdenum-gold proximity bilayers as transition edge sensors for microcalorimeters and bolometers

    International Nuclear Information System (INIS)

    Chen, T.C.; Bier, A.; DiCamillo, B.; Finkbeiner, F. M.

    1999-01-01

    Mo/Au proximity bilayers as transition edge sensors (TESs) are promising candidates for low-temperature thermometry. The transition temperature of the bilayers can be easily tuned between 50 and 600 mK, yielding sensors which can be used in a variety of calorimetric and bolometric applications. With phase transition widths of less than 1 mK, Mo/Au TESs show very high temperature sensitivity (d(logR)/d(logT)∼2500). Also, Mo/Au TESs show improved thermal and chemical stability compared to most other bilayer configurations. Fabrication issues and detector performance of Mo/Au TESs on Si 3 N 4 membranes are discussed. (author)

  20. DC and AC biasing of a transition edge sensor microcalorimeter

    International Nuclear Information System (INIS)

    Cunningham, M.F.; Ullom, J.N.; Miyazaki, T.; Drury, O.; Loshak, A.; Berg, M.L. van den; Labov, S.E.

    2002-01-01

    We are developing AC-biased transition edge sensor (TES) microcalorimeters for use in large arrays with frequency-domain multiplexing. Using DC bias, we have achieved a resolution of 17 eV FWHM at 2.6 keV with a decay time of 90 μs and an effective detector diameter of 300 μm. We have successfully measured thermal pulses with a TES microcalorimeter operated with an AC bias. We present here preliminary results from a single pixel detector operated under DC and AC bias conditions

  1. Integrated Amorphous Silicon p-i-n Temperature Sensor for CMOS Photonics

    Directory of Open Access Journals (Sweden)

    Sandro Rao

    2016-01-01

    Full Text Available Hydrogenated amorphous silicon (a-Si:H shows interesting optoelectronic and technological properties that make it suitable for the fabrication of passive and active micro-photonic devices, compatible moreover with standard microelectronic devices on a microchip. A temperature sensor based on a hydrogenated amorphous silicon p-i-n diode integrated in an optical waveguide for silicon photonics applications is presented here. The linear dependence of the voltage drop across the forward-biased diode on temperature, in a range from 30 °C up to 170 °C, has been used for thermal sensing. A high sensitivity of 11.9 mV/°C in the bias current range of 34–40 nA has been measured. The proposed device is particularly suitable for the continuous temperature monitoring of CMOS-compatible photonic integrated circuits, where the behavior of the on-chip active and passive devices are strongly dependent on their operating temperature.

  2. Vortex dynamics in superconducting transition edge sensors

    Science.gov (United States)

    Ezaki, S.; Maehata, K.; Iyomoto, N.; Asano, T.; Shinozaki, B.

    2018-02-01

    The temperature dependence of the electrical resistance (R-T) and the current-voltage (I-V) characteristics has been measured and analyzed in a 40 nm thick Ti thin film, which is used as a transition edge sensor (TES). The analyses of the I-V characteristics with the vortex-antivortex pair dissociation model indicate the possible existence of the Berezinskii-Kosterlitz-Thouless (BKT) transition in two-dimensional superconducting Ti thin films. We investigated the noise due to the vortices' flow in TESs. The values of the current noise spectral density in the TESs were estimated by employing the vortex dynamics caused by the BKT transition in the Ti thin films. The estimated values of the current noise spectral density induced by the vortices' flow were in respectable agreement with the values of excess noise experimentally observed in the TESs with Ti/Au bilayer.

  3. SQUID readout multiplexers for transition-edge sensor arrays

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Adrian T. [Physics Department, University of California, Berkeley, CA 94720 (United States) and Physics Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720 (United States)]. E-mail: atl@physics.berkeley.edu

    2006-04-15

    Two classes of SQUID multiplexer are being developed for large arrays of cryogenic sensors, distinguished by their operation in either the time domain or frequency domain. Several systems optimized for use with Transition-Edge Sensors (TES) are reaching a high level of maturity, and will be deployed on funded astrophysics experiments in the next several years. A useful technical figure of merit is the product of the number of detectors multplexed multipled by the bandwidth of the detectors, which can be termed the 'total signal bandwidth' of a multiplexer system. This figure of merit is comparable within a factor of two for the mature systems. Several new concepts for increasing the total bandwidth are being developed in the broad class of frequency domain multiplexers. Another notable area of progress is in the level of integration of muliplexer and detector array. The time domain system for SCUBA-II is a sophisticated bump-bonded sandwich structure, and the Jena/MPI group is integrating detectors and a time domain multiplexer on one substrate. Finally, the Kinetic Inductance Detectors (KID)/HEMT (non-SQUID) detector/multiplexer system, will be discussed briefly.

  4. Preliminary modulation transfer function study on amorphous silicon

    International Nuclear Information System (INIS)

    Khairul Anuar Mohd Salleh; Ab Razak Hamzah; Mohd Ashhar Khalid

    2006-01-01

    Modulation Transfer Function, (MTF) is the scientific means of evaluating the fundamental spatial resolution performance of an imaging system. In the study, the modulation transfer function of an amorphous silicon (aSi) sensor array is measured by using Edge Spread Function (ESF) Technique which is extracting a profile from the linearised image of the sharp edge. The Platinum foil is used to determine the ESF. The detector under study was a 2,304 (h) x 3,200 (v) total pixel matrix, 127 μm2 pixel pitch, 57% fill factor and using Gd2O2S:Tb Kodak Lanex Regular as the conversion screen. The ESF measurement is done by using 75 - 100 kV range of x-ray with constant mA. (Author)

  5. A beam monitor using silicon pixel sensors for hadron therapy

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Zhen, E-mail: zwang@mails.ccnu.edu.cn; Zou, Shuguang; Fan, Yan; Liu, Jun; Sun, Xiangming, E-mail: sphy2007@126.com; Wang, Dong; Kang, Huili; Sun, Daming; Yang, Ping; Pei, Hua; Huang, Guangming; Xu, Nu; Gao, Chaosong; Xiao, Le

    2017-03-21

    We report the design and test results of a beam monitor developed for online monitoring in hadron therapy. The beam monitor uses eight silicon pixel sensors, Topmetal-II{sup -}, as the anode array. Topmetal-II{sup -} is a charge sensor designed in a CMOS 0.35 µm technology. Each Topmetal-II{sup -} sensor has 72×72 pixels and the pixel size is 83×83 µm{sup 2}. In our design, the beam passes through the beam monitor without hitting the electrodes, making the beam monitor especially suitable for monitoring heavy ion beams. This design also reduces radiation damage to the beam monitor itself. The beam monitor is tested with a carbon ion beam at the Heavy Ion Research Facility in Lanzhou (HIRFL). Results indicate that the beam monitor can measure position, incidence angle and intensity of the beam with a position resolution better than 20 µm, angular resolution about 0.5° and intensity statistical accuracy better than 2%.

  6. Results from a first production of enhanced Silicon Sensor Test Structures produced by ITE Warsaw

    Science.gov (United States)

    Bergauer, T.; Dragicevic, M.; Frey, M.; Grabiec, P.; Grodner, M.; Hänsel, S.; Hartmann, F.; Hoffmann, K.-H.; Hrubec, J.; Krammer, M.; Kucharski, K.; Macchiolo, A.; Marczewski, J.

    2009-01-01

    Monitoring the manufacturing process of silicon sensors is essential to ensure stable quality of the produced detectors. During the CMS silicon sensor production we were utilising small Test Structures (TS) incorporated on the cut-away of the wafers to measure certain process-relevant parameters. Experience from the CMS production and quality assurance led to enhancements of these TS. Another important application of TS is the commissioning of new vendors. The measurements provide us with a good understanding of the capabilities of a vendor's process. A first batch of the new TS was produced at the Institute of Electron Technology in Warsaw Poland. We will first review the improvements to the original CMS test structures and then discuss a selection of important measurements performed on this first batch.

  7. Characteristics research of pressure sensor based on nanopolysilicon thin films resistors

    Science.gov (United States)

    Zhao, Xiaofeng; Li, Dandan; Wen, Dianzhong

    2017-10-01

    To further improve the sensitivity temperature characteristics of pressure sensor, a kind of pressure sensor taking nanopolysilicon thin films as piezoresistors is proposed in this paper. On the basis of the microstructure analysis by X-ray diffraction (XRD) and scanning electron microscope (SEM) tests, the preparing process of nanopolysilicon thin films is optimized. The effects of film thickness and annealing temperature on the micro-structure of nanopolysilicon thin films were studied, respectively. In order to realize the measurement of external pressure, four nanopolysilicon thin films resistors were arranged at the edges of square silicon diaphragm connected to a Wheatstone bridge, and the chip of the sensor was designed and fabricated on a 〈100〉 orientation silicon wafer by microelectromechanical system (MEMS) technology. Experimental result shows that when I = 6.80 mA, the sensitivity of the sensor PS-1 is 0.308 mV/kPa, and the temperature coefficient of sensitivity (TCS) is about -1742 ppm/∘C in the range of -40-140∘C. It is possible to obviously improve the sensitivity temperature characteristics of pressure sensor by the proposed sensors.

  8. Temperature characteristics research of SOI pressure sensor based on asymmetric base region transistor

    Science.gov (United States)

    Zhao, Xiaofeng; Li, Dandan; Yu, Yang; Wen, Dianzhong

    2017-07-01

    Based on the asymmetric base region transistor, a pressure sensor with temperature compensation circuit is proposed in this paper. The pressure sensitive structure of the proposed sensor is constructed by a C-type silicon cup and a Wheatstone bridge with four piezoresistors ({R}1, {R}2, {R}3 and {R}4) locating on the edge of a square silicon membrane. The chip was designed and fabricated on a silicon on insulator (SOI) wafer by micro electromechanical system (MEMS) technology and bipolar transistor process. When the supply voltage is 5.0 V, the corresponding temperature coefficient of the sensitivity (TCS) for the sensor before and after temperature compensation are -1862 and -1067 ppm/°C, respectively. Through varying the ratio of the base region resistances {r}1 and {r}2, the TCS for the sensor with the compensation circuit is -127 ppm/°C. It is possible to use this compensation circuit to improve the temperature characteristics of the pressure sensor. Project supported by the National Natural Science Foundation of China (No. 61471159), the Natural Science Foundation of Heilongjiang Province (No. F201433), the University Nursing Program for Young Scholars with Creative Talents in Heilongjiang Province (No. 2015018), and the Special Funds for Science and Technology Innovation Talents of Harbin in China (No. 2016RAXXJ016).

  9. Highly Sensitive Bulk Silicon Chemical Sensors with Sub-5 nm Thin Charge Inversion Layers.

    Science.gov (United States)

    Fahad, Hossain M; Gupta, Niharika; Han, Rui; Desai, Sujay B; Javey, Ali

    2018-03-27

    There is an increasing demand for mass-producible, low-power gas sensors in a wide variety of industrial and consumer applications. Here, we report chemical-sensitive field-effect-transistors (CS-FETs) based on bulk silicon wafers, wherein an electrostatically confined sub-5 nm thin charge inversion layer is modulated by chemical exposure to achieve a high-sensitivity gas-sensing platform. Using hydrogen sensing as a "litmus" test, we demonstrate large sensor responses (>1000%) to 0.5% H 2 gas, with fast response (<60 s) and recovery times (<120 s) at room temperature and low power (<50 μW). On the basis of these performance metrics as well as standardized benchmarking, we show that bulk silicon CS-FETs offer similar or better sensing performance compared to emerging nanostructures semiconductors while providing a highly scalable and manufacturable platform.

  10. Silicon-on-insulator (SOI) active pixel sensors with the photosite implemented in the substrate

    Science.gov (United States)

    Zheng, Xinyu (Inventor); Pain, Bedabrata (Inventor)

    2005-01-01

    Active pixel sensors for a high quality imager are fabricated using a silicon-on-insulator (SOI) process by integrating the photodetectors on the SOI substrate and forming pixel readout transistors on the SOI thin-film. The technique can include forming silicon islands on a buried insulator layer disposed on a silicon substrate and selectively etching away the buried insulator layer over a region of the substrate to define a photodetector area. Dopants of a first conductivity type are implanted to form a signal node in the photodetector area and to form simultaneously drain/source regions for a first transistor in at least a first one of the silicon islands. Dopants of a second conductivity type are implanted to form drain/source regions for a second transistor in at least a second one of the silicon islands. Isolation rings around the photodetector also can be formed when dopants of the second conductivity type are implanted. Interconnections among the transistors and the photodetector are provided to allow signals sensed by the photodetector to be read out via the transistors formed on the silicon islands.

  11. Trapping in irradiated p-on-n silicon sensors at fluences anticipated at the HL-LHC outer tracker

    CERN Document Server

    Adam, W.; Dragicevic, M.; Friedl, M.; Fruehwirth, R.; Hoch, M.; Hrubec, J.; Krammer, M.; Treberspurg, W.; Waltenberger, W.; Alderweireldt, S.; Beaumont, W.; Janssen, X.; Luyckx, S.; Van Mechelen, P.; Van Remortel, N.; Van Spilbeeck, A.; Barria, P.; Caillol, C.; Clerbaux, B.; De Lentdecker, G.; Dobur, D.; Favart, L.; Grebenyuk, A.; Lenzi, Th.; Leonard, A.; Maerschalk, Th.; Mohammadi, A.; Pernie, L.; Randle-Conde, A.; Reis, T.; Seva, T.; Thomas, L.; Vander Velde, C.; Vanlaer, P.; Wang, J.; Zenoni, F.; Zeid, S.Abu; Blekman, F.; De Bruyn, I.; D'Hondt, J.; Daci, N.; Deroover, K.; Heracleous, N.; Keaveney, J.; Lowette, S.; Moreels; Olbrechts, A.; Python, Q.; Tavernier, S.; Van Mulders, P.; Van Onsem, G.; Van Parijs, I.; Strom, D.A.; Basegmez, S.; Bruno, G.; Castello, R.; Caudron, A.; Ceard, L.; De Callatay, B.; Delaere, C.; Pree, T.Du; Forthomme, L.; Giammanco, A.; Hollar, J.; Jez, P.; Michotte, D.; Nuttens, C.; Perrini, L.; Pagano, D.; Quertenmont, L.; Selvaggi, M.; Marono, M.Vidal; Beliy, N.; Caebergs, T.; Daubie, E.; Hammad, G.H.; Harkonen, J.; Lampen, T.; Luukka, P.R.; Maenpaa, T.; Peltola, T.; Tuominen, E.; Tuovinen, E.; Eerola, P.; Tuuva, T.; Beaulieu, G.; Boudoul, G.; Combaret, C.; Contardo, D.; Gallbit, G.; Lumb, N.; Mathez, H.; Mirabito, L.; Perries, S.; Sabes, D.; Vander Donckt, M.; Verdier, P.; Viret, S.; Zoccarato, Y.; Agram, J.L.; Conte, E.; Fontaine, J.Ch.; Andrea, J.; Bloch, D.; Bonnin, C.; Brom, J.M.; Chabert, E.; Charles, L.; Goetzmann, Ch.; Gross, L.; Hosselet, J.; Mathieu, C.; Richer, M.; Skovpen, K.; Pistone, C.; Fluegge, G.; Kuensken, A.; Geisler, M.; Pooth, O.; Stahl, A.; Autermann, C.; Edelhoff, M.; Esser, H.; Feld, L.; Karpinski, W.; Klein, K.; Lipinski, M.; Ostapchuk, A.; Pierschel, G.; Preuten, M.; Raupach, F.; Sammet, J.; Schael, S.; Schwering, G.; Wittmer, B.; Wlochal, M.; Zhukov, V.; Bartosik, N.; Behr, J.; Burgmeier, A.; Calligaris, L.; Dolinska, G.; Eckerlin, G.; Eckstein, D.; Eichhorn, T.; Fluke, G.; Garcia, J.Garay; Gizhko, A.; Hansen, K.; Harb, A.; Hauk, J.; Kalogeropoulos, A.; Kleinwort, C.; Korol, I.; Lange, W.; Lohmann, W.; Mankel, R.; Maser, H.; Mittag, G.; Muhl, C.; Mussgiller, A.; Nayak, A.; Ntomari, E.; Perrey, H.; Pitzl, D.; Schroeder, M.; Seitz, C.; Spannagel, S.; Zuber, A.; Biskop, H.; Blobel, V.; Buhmann, P.; Centis-Vignali, M.; Draeger, A.R.; Erfle, J.; Garutti, E.; Haller, J.; Hoffmann, M.; Junkes, A.; Lapsien, T.; Mattig, S.; Matysek, M.; Perieanu, A.; Poehlsen, J.; Poehlsen, T.; Scharf, Ch.; Schleper, P.; Schmidt, A.; Sola, V.; Steinbruck, G.; Wellhausen, J.; Barvich, T.; Barth, Ch.; Boegelspacher, F.; De Boer, W.; Butz, E.; Casele, M.; Colombo, F.; Dierlamm, A.; Eber, R.; Freund, B.; Hartmann, F.; Hauth, Th.; Heindl, S.; Hoffmann, K.H.; Husemann, U.; Kornmeyer, A.; Mallows, S.; Muller, Th.; Nuernberg, A.; Printz, M.; Simonis, H.J.; Steck, P.; Weber, M.; Weiler, Th.; Bhardwaj, A.; Kumar, A.; Ranjan, K.; Bakhshiansohl, H.; Behnamian, H.; Khakzad, M.; Naseri, M.; Cariola, P.; De Robertis, G.; Fiore, L.; Franco, M.; Loddo, F.; Sala, G.; Silvestris, L.; Creanza, D.; De Palma, M.; Maggi, G.; My, S.; Selvaggi, G.; Albergo, S.; Cappello, G.; Chiorboli, M.; Costa, S.; Giordano, F.; Di Mattia, A.; Potenza, R.; Saizu, M.A.; Tricomi, A.; Tuve, C.; Barbagli, G.; Brianzi, M.; Ciaranfi, R.; Civinini, C.; Gallo, E.; Meschini, M.; Paoletti, S.; Sguazzoni, G.; Ciulli, V.; D'Alessandro, R.; Gonzi, S.; Gori, V.; Focardi, E.; Lenzi, P.; Scarlini, E.; Tropiano, A.; Viliani, L.; Ferro, F.; Robutti, E.; Lo Vetere, M.; Gennai, S.; Malvezzi, S.; Menasce, D.; Moroni, L.; Pedrini, D.; Dinardo, M.; Fiorendi, S.; Manzoni, R.A.; Azzi, P.; Bacchetta, N.; Bisello, D.; Dall'Osso, M.; Dorigo, T.; Giubilato, P.; Pozzobon, N.; Tosi, M.; Zucchetta, A.; De Canio, F.; Gaioni, L.; Manghisoni, M.; Nodari, B.; Re, V.; Traversi, G.; Comotti, D.; Ratti, L.; Bilei, G.M.; Bissi, L.; Checcucci, B.; Magalotti, D.; Menichelli, M.; Saha, A.; Servoli, L.; Storchi, L.; Biasini, M.; Conti, E.; Ciangottini, D.; Fano, L.; Lariccia, P.; Mantovani, G.; Passeri, D.; Placidi, P.; Salvatore, M.; Santocchia, A.; Solestizi, L.A.; Spiezia, A.; Androsov, K.; Azzurri, P.; Arezzini, S.; Bagliesi, G.; Basti, A.; Boccali, T.; Bosi, F.; Castaldi, R.; Ciampa, A.; Ciocci, M.A.; Dell'Orso, R.; Fedi, G.; Giassi, A.; Grippo, M.T.; Lomtadze, T.; Magazzu, G.; Mazzoni, E.; Minuti, M.; Moggi, A.; Moon, C.S.; Morsani, F.; Palla, F.; Palmonari, F.; Raffaelli, F.; Savoy-Navarro, A.; Serban, A.T.; Spagnolo, P.; Tenchini, R.; Venturi, A.; Verdini, P.G.; Martini, L.; Messineo, A.; Rizzi, A.; Tonelli, G.; Calzolari, F.; Donato, S.; Fiori, F.; Ligabue, F.; Vernieri, C.; Demaria, N.; Rivetti, A.; Bellan, R.; Casasso, S.; Costa, M.; Covarelli, R.; Migliore, E.; Monteil, E.; Musich, M.; Pacher, L.; Ravera, F.; Romero, A.; Solano, A.; Trapani, P.; Jaramillo Echeverria, R.; Fernandez, M.; Gomez, G.; Moya, D.; F. Gonzalez Sanchez, J.; Munoz Sanchez, F.J.; Vila, I.; Virto, A.L.; Abbaneo, D.; Ahmed, I.; Albert, E.; Auzinger, G.; Berruti, G.; Bianchi, G.; Blanchot, G.; Breuker, H.; Ceresa, D.; Christiansen, J.; Cichy, K.; Daguin, J.; D'Alfonso, M.; D'Auria, A.; Detraz, S.; De Visscher, S.; Deyrail, D.; Faccio, F.; Felici, D.; Frank, N.; Gill, K.; Giordano, D.; Harris, P.; Honma, A.; Kaplon, J.; Kornmayer, A.; Kottelat, L.; Kovacs, M.; Mannelli, M.; Marchioro, A.; Marconi, S.; Martina, S.; Mersi, S.; Michelis, S.; Moll, M.; Onnela, A.; Pakulski, T.; Pavis, S.; Peisert, A.; Pernot, J.F.; Petagna, P.; Petrucciani, G.; Postema, H.; Rose, P.; Rzonca, M.; Stoye, M.; Tropea, P.; Troska, J.; Tsirou, A.; Vasey, F.; Vichoudis, P.; Verlaat, B.; Zwalinski, L.; Bachmair, F.; Becker, R.; Bani, L.; di Calafiori, D.; Casal, B.; Djambazov, L.; Donega, M.; Dunser, M.; Eller, P.; Grab, C.; Hits, D.; Horisberger, U.; Hoss, J.; Kasieczka, G.; Lustermann, W.; Mangano, B.; Marionneau, M.; Martinez Ruiz del Arbol, P.; Masciovecchio, M.; Perrozzi, L.; Roeser, U.; Rossini, M.; Starodumov, A.; Takahashi, M.; Wallny, R.; Amsler, C.; Bosiger, K.; Caminada, L.; Canelli, F.; Chiochia, V.; De Cosa, A.; Galloni, C.; Hreus, T.; Kilminster, B.; Lange, C.; Maier, R.; Ngadiuba, J.; Pinna, D.; Robmann, P.; Taroni, S.; Yang, Y.; Bertl, W.; Deiters, K.; Erdmann, W.; Horisberger, R.; Kaestli, H.C.; Kotlinski, D.; Langenegger, U.; Meier, B.; Rohe, T.; Streuli, S.; Chen, P.H.; Dietz, C.; Grundler, U.; Hou, W.S.; Lu, R.S.; Moya, M.; Wilken, R.; Cussans, D.; Flacher, H.; Goldstein, J.; Grimes, M.; Jacob, J.; El Nasr-Storey, S.Seif; Cole, J.; Hobson, P.; Leggat, D.; Reid, I.D.; Teodorescu, L.; Bainbridge, R.; Dauncey, P.; Fulcher, J.; Hall, G.; Magnan, A.M.; Pesaresi, M.; Raymond, D.M.; Uchida, K.; Coughlan, J.A.; Harder, K.; Ilic, J.; Tomalin, I.R.; Garabedian, A.; Heintz, U.; Narain, M.; Nelson, J.; Sagir, S.; Speer, T.; Swanson, J.; Tersegno, D.; Watson-Daniels, J.; Chertok, M.; Conway, J.; Conway, R.; Flores, C.; Lander, R.; Pellett, D.; Ricci-Tam, F.; Squires, M.; Thomson, J.; Yohay; Burt, K.; Ellison, J.; Hanson, G.; Malberti, M.; Olmedo, M.; Cerati, G.; Sharma, V.; Vartak, A.; Yagil, A.; Della Porta, G.Zevi; Dutta, V.; Gouskos, L.; Incandela, J.; Kyre, S.; McColl, N.; Mullin, S.; White, D.; Cumalat, J.P.; Ford, W.T.; Gaz, A.; Krohn, M.; Stenson, K.; Wagner, S.R.; Baldin, B.; Bolla, G.; Burkett, K.; Butler, J.; Cheung, H.; Chramowicz, J.; Christian, D.; Cooper, W.E.; Deptuch, G.; Derylo, G.; Gingu, C.; Gruenendahl, S.; Hasegawa, S.; Hoff, J.; Howell, J.; Hrycyk, M.; Jindariani, S.; Johnson, M.; Jung, A.; Joshi, U.; Kahlid, F.; Lei, C.M.; Lipton, R.; Liu, T.; Los, S.; Matulik, M.; Merkel, P.; Nahn, S.; Prosser, A.; Rivera, R.; Shenai, A.; Spiegel, L.; Tran, N.; Uplegger, L.; Voirin, E.; Yin, H.; Adams, M.R.; Berry, D.R.; Evdokimov, A.; Evdokimov, O.; Gerber, C.E.; Hofman, D.J.; Kapustka, B.K.; O'Brien, C.; Sandoval Gonzalez, D.I.; Trauger, H.; Turner, P.; Parashar, N.; Stupak, J.; I.I.I.; Bortoletto, D.; Bubna, M.; Hinton, N.; Jones, M.; Miller, D.H.; Shi, X.; Tan, P.; Baringer, P.; Bean, A.; Benelli, G.; Gray, J.; Majumder, D.; Noonan, D.; Sanders, S.; Stringer, R.; Ivanov, A.; Makouski, M.; Skhirtladze, N.; Taylor, R.; Anderson, I.; Fehling, D.; Gritsan, A.; Maksimovic, P.; Martin, C.; Nash, K.; Osherson, M.; Swartz, M.; Xiao, M.; Acosta, J.G.; Cremaldi, L.M.; Oliveros, S.; Perera, L.; Summers, D.; Bloom, K.; Bose, S.; Claes, D.R.; Dominguez, A.; Fangmeier, C.; Gonzalez Suarez, R.; Meier, F.; Monroy, J.; Hahn, K.; Sevova, S.; Sung, K.; Trovato, M.; Bartz, E.; Duggan, D.; Halkiadakis, E.; Lath, A.; Park, M.; Schnetzer, S.; Stone, R.; Walker, M.; Malik, S.; Mendez, H.; Ramirez Vargas, J.E.; Alyari, M.; Dolen, J.; George, J.; Godshalk, A.; Iashvili, I.; Kaisen, J.; Kharchilava, A.; Kumar, A.; Rappoccio, S.; Alexander, J.; Chaves, J.; Chu, J.; Dittmer, S.; Kaufman, G.; Mirman, N.; Ryd, A.; Salvati, E.; Skinnari, L.; Thom, J.; Thompson, J.; Tucker, J.; Winstrom, L.; Akgun, B.; Ecklund, K.M.; Nussbaum, T.; Zabel, J.; Betchart, B.; Demina, R.; Hindrichs, O.; Petrillo, G.; Eusebi, R.; Osipenkov, I.; Perloff, A.; Ulmer, K.A.; Delannoy, A.G.; D'Angelo, P.; Johns, W.

    2016-04-22

    The degradation of signal in silicon sensors is studied under conditions expected at the CERN High-Luminosity LHC. 200 $\\mu$m thick n-type silicon sensors are irradiated with protons of different energies to fluences of up to $3 \\cdot 10^{15}$ neq/cm$^2$. Pulsed red laser light with a wavelength of 672 nm is used to generate electron-hole pairs in the sensors. The induced signals are used to determine the charge collection efficiencies separately for electrons and holes drifting through the sensor. The effective trapping rates are extracted by comparing the results to simulation. The electric field is simulated using Synopsys device simulation assuming two effective defects. The generation and drift of charge carriers are simulated in an independent simulation based on PixelAV. The effective trapping rates are determined from the measured charge collection efficiencies and the simulated and measured time-resolved current pulses are compared. The effective trapping rates determined for both electrons and holes...

  12. Percolation model of excess electrical noise in transition-edge sensors

    International Nuclear Information System (INIS)

    Lindeman, M.A.; Anderson, M.B.; Bandler, S.R.; Bilgri, N.; Chervenak, J.; Gwynne Crowder, S.; Fallows, S.; Figueroa-Feliciano, E.; Finkbeiner, F.; Iyomoto, N.; Kelley, R.; Kilbourne, C.A.; Lai, T.; Man, J.; McCammon, D.; Nelms, K.L.; Porter, F.S.; Rocks, L.E.; Saab, T.; Sadleir, J.; Vidugiris, G.

    2006-01-01

    We present a geometrical model to describe excess electrical noise in transition-edge sensors (TESs). In this model, a network of fluctuating resistors represents the complex dynamics inside a TES. The fluctuations can cause several resistors in series to become superconducting. Such events short out part of the TES and generate noise because much of the current percolates through low resistance paths. The model predicts that excess white noise increases with decreasing TES bias resistance (R/R N ) and that perpendicular zebra stripes reduce noise and alpha of the TES by reducing percolation

  13. Investigations into the impact of bond pads and p-stop implants on the detection efficiency of silicon micro-strip sensors

    Energy Technology Data Exchange (ETDEWEB)

    Poley, Luise; Lohwasser, Kristin [DESY, Hamburg (Germany); Blue, Andrew [Glasgow Univ. (United Kingdom). SUPA School of Physics and Astronomy; and others

    2016-11-15

    The High Luminosity Upgrade of the LHC will require the replacement of the Inner Detector of ATLAS with the Inner Tracker (ITk) in order to cope with higher radiation levels and higher track densities. Prototype silicon strip detector modules are currently developed and their performance is studied in both particle test beams and X-ray beams. In previous test beam studies of prototype modules, silicon sensor strips were found to respond in regions varying from the strip pitch of 74.5 μm. The variations have been linked to local features of the sensor architecture. This paper presents results of detailed sensor measurements in both X-ray and particle beams investigating the impact of sensor features (metal pads and p-stops) on the responding area of a sensor strip.

  14. Investigations into the impact of bond pads and p-stop implants on the detection efficiency of silicon micro-strip sensors

    International Nuclear Information System (INIS)

    Poley, Luise; Lohwasser, Kristin; Blue, Andrew

    2016-11-01

    The High Luminosity Upgrade of the LHC will require the replacement of the Inner Detector of ATLAS with the Inner Tracker (ITk) in order to cope with higher radiation levels and higher track densities. Prototype silicon strip detector modules are currently developed and their performance is studied in both particle test beams and X-ray beams. In previous test beam studies of prototype modules, silicon sensor strips were found to respond in regions varying from the strip pitch of 74.5 μm. The variations have been linked to local features of the sensor architecture. This paper presents results of detailed sensor measurements in both X-ray and particle beams investigating the impact of sensor features (metal pads and p-stops) on the responding area of a sensor strip.

  15. Study of planar pixel sensors hardener to radiations for the upgrade of the ATLAS vertex detector

    International Nuclear Information System (INIS)

    Benoit, M.

    2011-05-01

    In this work, we present a study, using TCAD (Technology Computer-Assisted Design) simulation, of the possible methods of designing planar pixel sensors by reducing their inactive area and improving their radiation hardness for use in the Insertable B-Layer (IBL) project and for SLHC upgrade phase for the ATLAS experiment. Different physical models available have been studied to develop a coherent model of radiation damage in silicon that can be used to predict silicon pixel sensor behavior after exposure to radiation. The Multi-Guard Ring Structure, a protection structure used in pixel sensor design was studied to obtain guidelines for the reduction of inactive edges detrimental to detector operation while keeping a good sensor behavior through its lifetime in the ATLAS detector. A campaign of measurement of the sensor process parameters and electrical behavior to validate and calibrate the TCAD simulation models and results are also presented. A model for diode charge collection in highly irradiated environment was developed to explain the high charge collection observed in highly irradiated devices. A simple planar pixel sensor digitization model to be used in test beam and full detector system is detailed. It allows for easy comparison between experimental data and prediction by the various radiation damage models available. The digitizer has been validated using test beam data for unirradiated sensors and can be used to produce the first full scale simulation of the ATLAS detector with the IBL that include sensor effects such as slim edge and thinning of the sensor. (author)

  16. High quantum efficiency annular backside silicon photodiodes for reflectance pulse oximetry in wearable wireless body sensors

    International Nuclear Information System (INIS)

    Duun, Sune; Haahr, Rasmus G; Hansen, Ole; Birkelund, Karen; Thomsen, Erik V

    2010-01-01

    The development of annular photodiodes for use in a reflectance pulse oximetry sensor is presented. Wearable and wireless body sensor systems for long-term monitoring require sensors that minimize power consumption. We have fabricated large area 2D ring-shaped silicon photodiodes optimized for minimizing the optical power needed in reflectance pulse oximetry. To simplify packaging, backside photodiodes are made which are compatible with assembly using surface mounting technology without pre-packaging. Quantum efficiencies up to 95% and area-specific noise equivalent powers down to 30 fW Hz -1/2 cm -1 are achieved. The photodiodes are incorporated into a wireless pulse oximetry sensor system embedded in an adhesive patch presented elsewhere as 'The Electronic Patch'. The annular photodiodes are fabricated using two masked diffusions of first boron and subsequently phosphor. The surface is passivated with a layer of silicon nitride also serving as an optical filter. As the final process, after metallization, a hole in the center of the photodiode is etched using deep reactive ion etch.

  17. Ultra-fast silicon detectors

    Energy Technology Data Exchange (ETDEWEB)

    Sadrozinski, H. F.-W., E-mail: hartmut@scipp.ucsc.edu [Santa Cruz Institute for Particle Physics, UC Santa Cruz, Santa Cruz, CA 95064 (United States); Ely, S.; Fadeyev, V.; Galloway, Z.; Ngo, J.; Parker, C.; Petersen, B.; Seiden, A.; Zatserklyaniy, A. [Santa Cruz Institute for Particle Physics, UC Santa Cruz, Santa Cruz, CA 95064 (United States); Cartiglia, N.; Marchetto, F. [INFN Torino, Torino (Italy); Bruzzi, M.; Mori, R.; Scaringella, M.; Vinattieri, A. [University of Florence, Department of Physics and Astronomy, Sesto Fiorentino, Firenze (Italy)

    2013-12-01

    We propose to develop a fast, thin silicon sensor with gain capable to concurrently measure with high precision the space (∼10 μm) and time (∼10 ps) coordinates of a particle. This will open up new application of silicon detector systems in many fields. Our analysis of detector properties indicates that it is possible to improve the timing characteristics of silicon-based tracking sensors, which already have sufficient position resolution, to achieve four-dimensional high-precision measurements. The basic sensor characteristics and the expected performance are listed, the wide field of applications are mentioned and the required R and D topics are discussed. -- Highlights: •We are proposing thin pixel silicon sensors with 10's of picoseconds time resolution. •Fast charge collection is coupled with internal charge multiplication. •The truly 4-D sensors will revolutionize imaging and particle counting in many applications.

  18. Study and characterization of an integrated circuit-deposited hydrogenated amorphous silicon sensor for the detection of particles and radiations

    International Nuclear Information System (INIS)

    Despeisse, M.

    2006-03-01

    Next generation experiments at the European laboratory of particle physics (CERN) require particle detector alternatives to actual silicon detectors. This thesis presents a novel detector technology, which is based on the deposition of a hydrogenated amorphous silicon sensor on top of an integrated circuit. Performance and limitations of this technology have been assessed for the first time in this thesis in the context of particle detectors. Specific integrated circuits have been designed and the detector segmentation, the interface sensor-chip and the sensor leakage current have been studied in details. The signal induced by the track of an ionizing particle in the sensor has been characterized and results on the signal speed, amplitude and on the sensor resistance to radiation are presented. The results are promising regarding the use of this novel technology for radiation detection, though limitations have been shown for particle physics application. (author)

  19. Piezoresistive Composite Silicon Dioxide Nanocantilever Surface Stress Sensor: Design and Optimization.

    Science.gov (United States)

    Mathew, Ribu; Sankar, A Ravi

    2018-05-01

    In this paper, we present the design and optimization of a rectangular piezoresistive composite silicon dioxide nanocantilever sensor. Unlike the conventional design approach, we perform the sensor optimization by not only considering its electro-mechanical response but also incorporating the impact of self-heating induced thermal drift in its terminal characteristics. Through extensive simulations first we comprehend and quantify the inaccuracies due to self-heating effect induced by the geometrical and intrinsic parameters of the piezoresistor. Then, by optimizing the ratio of electrical sensitivity to thermal sensitivity defined as the sensitivity ratio (υ) we improve the sensor performance and measurement reliability. Results show that to ensure υ ≥ 1, shorter and wider piezoresistors are better. In addition, it is observed that unlike the general belief that high doping concentration of piezoresistor reduces thermal sensitivity in piezoresistive sensors, to ensure υ ≥ 1 doping concentration (p) should be in the range: 1E18 cm-3 ≤ p ≤ 1E19 cm-3. Finally, we provide a set of design guidelines that will help NEMS engineers to optimize the performance of such sensors for chemical and biological sensing applications.

  20. Results from a first production of enhanced Silicon Sensor Test Structures produced by ITE Warsaw

    Energy Technology Data Exchange (ETDEWEB)

    Bergauer, T. [Institute of High Energy Physics, Austrian Academy of Sciences, Nikolsdorfergasse 18, 1050 Vienna (Austria); Dragicevic, M. [Institute of High Energy Physics, Austrian Academy of Sciences, Nikolsdorfergasse 18, 1050 Vienna (Austria)], E-mail: dragicevic@oeaw.ac.at; Frey, M. [Institut fuer Experimentelle Kernphysik (IEKP), Universitaet Karlsruhe (Thailand) (Germany); Grabiec, P.; Grodner, M. [Institute of Electron Technology (ITE), Warsaw (Poland); Haensel, S. [Institute of High Energy Physics, Austrian Academy of Sciences, Nikolsdorfergasse 18, 1050 Vienna (Austria); Hartmann, F.; Hoffmann, K.-H. [Institut fuer Experimentelle Kernphysik (IEKP), Universitaet Karlsruhe (Thailand) (Germany); Hrubec, J.; Krammer, M. [Institute of High Energy Physics, Austrian Academy of Sciences, Nikolsdorfergasse 18, 1050 Vienna (Austria); Kucharski, K. [Institute of Electron Technology (ITE), Warsaw (Poland); Macchiolo, A. [Max-Planck-Institut fuer Physik (MPI), Munich (Germany); Marczewski, J. [Institute of Electron Technology (ITE), Warsaw (Poland)

    2009-01-01

    Monitoring the manufacturing process of silicon sensors is essential to ensure stable quality of the produced detectors. During the CMS silicon sensor production we were utilising small Test Structures (TS) incorporated on the cut-away of the wafers to measure certain process-relevant parameters. Experience from the CMS production and quality assurance led to enhancements of these TS. Another important application of TS is the commissioning of new vendors. The measurements provide us with a good understanding of the capabilities of a vendor's process. A first batch of the new TS was produced at the Institute of Electron Technology in Warsaw Poland. We will first review the improvements to the original CMS test structures and then discuss a selection of important measurements performed on this first batch.

  1. Determination of the Tc distribution for 1000 Transition Edge Sensors

    International Nuclear Information System (INIS)

    Brink, P.L.; Saab, T.; Miller, A.J.; Cabrera, B.; Castle, J.P.; Chang, C.; Young, B.A.; Akerib, D.S.; Discroll, D.; Kamat, S.; Perera, T.A.; Schnee, R.W.; Wang, G.; Emes, J.H.; Gaitskell, R.J.; Mandic, V.; Meunier, P.; Rau, W.; Sadoulet, B.; Seitz, D.N.

    2002-01-01

    The ZIP detectors deployed in the CDMS II experiment utilize phonon sensors comprising W Transition Edge Sensors (TESs). In order to ensure uniform collection of the athermal phonon signal the TESs are dispersed uniformly on one side of a 1 cm thick, 3 inch diameter, disk. Each quadrant contains 1036 TESs connected in parallel to one series-array SQUID amplifier. The initial superconducting transition temperatures of these TESs tend to be too high for our requirements, and substantial gradients make the operation of the detectors difficult. Hence our implementation of Fe-56 ion implantation, as reported at the previous LTD meeting, to reduce in a controlled manner the transition temperature. However, the successful implementation of this ion-implantation scheme requires accurate knowledge of the initial transition temperature of each TES in a given quadrant. We report on our approaches and techniques employed to address the issue of determining the initial Tc distribution

  2. Digital solar edge tracker for the Halogen Occultation Experiment

    Science.gov (United States)

    Mauldin, L. E., III; Moore, A. S.; Stump, C. W.; Mayo, L. S.

    1987-01-01

    The optical and electronic design of the Halogen Occultation Experiment (Haloe) elevation sun sensor is described. The Haloe instrument is a gas-correlation radiometer now being developed at NASA Langley for the Upper Atmosphere Research Satellite. The system uses a Galilean telescope to form a solar image on a linear silicon photodiode array. The array is a self-scanned monolithic CCD. The addresses of both solar edges imaged on the array are used by the control/pointing system to scan the Haloe science instantaneous field of view (IFOV) across the vertical solar diameter during instrument calibration and then to maintain the science IFOV 4 arcmin below the top edge during the science data occultation event. Vertical resolution of 16 arcsec and a radiometric dynamic range of 100 are achieved at the 700-nm operating wavelength. The design provides for loss of individual photodiode elements without loss of angular tracking capability.

  3. Amorphous silicon based particle detectors

    OpenAIRE

    Wyrsch, N.; Franco, A.; Riesen, Y.; Despeisse, M.; Dunand, S.; Powolny, F.; Jarron, P.; Ballif, C.

    2012-01-01

    Radiation hard monolithic particle sensors can be fabricated by a vertical integration of amorphous silicon particle sensors on top of CMOS readout chip. Two types of such particle sensors are presented here using either thick diodes or microchannel plates. The first type based on amorphous silicon diodes exhibits high spatial resolution due to the short lateral carrier collection. Combination of an amorphous silicon thick diode with microstrip detector geometries permits to achieve micromete...

  4. FISH & CHIPS: Single Chip Silicon MEMS CTDL Salinity, Temperature, Pressure and Light sensor for use in fisheries research

    DEFF Research Database (Denmark)

    Hyldgård, Anders; Hansen, Ole; Thomsen, Erik Vilain

    2005-01-01

    A single-chip silicon MEMS CTDL multi sensor for use in aqueous environments is presented. The new sensor chip consists of a conductivity sensor based on platinum electrodes (C), an ion-implanted thermistor temperature sensor (T), a piezoresistive pressure sensor (D for depth/pressure) and an ion......-implanted p-n junction light sensor (L). The design and fabrication process is described. A temperature sensitivity of 0.8 × 10-3K-1 has been measured and detailed analysis of conductivity measurement data shows a cell constant of 81 cm-1....

  5. A digital X-ray imaging system based on silicon strip detectors working in edge-on configuration

    Energy Technology Data Exchange (ETDEWEB)

    Bolanos, L. [CEADEN, Calle 30 502 e/ 5ta y 7ma Avenida, Playa, Ciudad Habana (Cuba); Boscardin, M. [IRST, Fondazione Bruno Kessler, Via Sommarive 18, Povo, 38100 Trento (Italy); Cabal, A.E. [CEADEN, Calle 30 502 e/ 5ta y 7ma Avenida, Playa, Ciudad Habana (Cuba); Diaz, M. [InSTEC, Ave. Salvador Allende esq. Luaces, Quinta de los Molinos, Ciudad Habana (Cuba); Grybos, P.; Maj, P. [Faculty of Electrical Engineering, Automatics, Computer Science and Electronics, Department of Measurement and Instrumentation, AGH University of Science and Technology, Al. Mickiewicza 30, 30-059 Cracow (Poland); Prino, F. [Istituto Nazionale di Fisica Nucleare, Sezione di Torino, Via P. Giuria 1, 10125 Torino (Italy); Ramello, L. [Dipartimento di Scienze e Tecnologie Avanzate, Universita del Piemonte Orientale, Via T. Michel 11, 15100 Alessandria (Italy)], E-mail: luciano.ramello@mfn.unipmn.it; Szczygiel, R. [Faculty of Electrical Engineering, Automatics, Computer Science and Electronics, Department of Measurement and Instrumentation, AGH University of Science and Technology, Al. Mickiewicza 30, 30-059 Cracow (Poland)

    2009-09-21

    We present the energy resolution and imaging performance of a digital X-ray imaging system based on a 512-strip silicon strip detector (SSD) working in the edge-on configuration. The SSDs tested in the system are 300 {mu}m thick with 1 or 2-cm-long strips and 100 {mu}m pitch. To ensure a very small dead area of the SSD working in edge-on configuration, the detector is cut perpendicular to the strips at a distance of only 20 {mu}m from the end of the strips. The 512-strip silicon detector is read out by eight 64-channel integrated circuits called DEDIX [Grybos et al., IEEE Trans. Nucl. Sci. NS-54 (2007) 1207]. The DEDIX IC operates in a single photon counting mode with two independent amplitude discriminators per channel. The readout electronic channel connected to a detector with effective input capacitance of about 2 pF has an average equivalent noise charge (ENC) of about 163 el. rms and is able to count 1 Mcps of average rate of input pulses. The system consisting of 512 channels has an excellent channel-to-channel uniformity-the effective threshold spread calculated to the charge-sensitive amplifier inputs is 12 el. rms (at one sigma level). With this system a few test images of a phantom have been taken in the 10-30 keV energy range.

  6. Active-Optical Sensors Using Red NDVI Compared to Red Edge NDVI for Prediction of Corn Grain Yield in North Dakota, U.S.A.

    Science.gov (United States)

    Sharma, Lakesh K; Bu, Honggang; Denton, Anne; Franzen, David W

    2015-11-02

    Active-optical sensor readings from an N non-limiting area standard established within a farm field are used to predict yield in the standard. Lower yield predictions from sensor readings obtained from other parts of the field outside of the N non-limiting standard area indicate a need for supplemental N. Active-optical sensor algorithms for predicting corn (Zea mays, L.) yield to direct in-season nitrogen (N) fertilization in corn utilize red NDVI (normalized differential vegetative index). Use of red edge NDVI might improve corn yield prediction at later growth stages when corn leaves cover the inter-row space resulting in "saturation" of red NDVI readings. The purpose of this study was to determine whether the use of red edge NDVI in two active-optical sensors (GreenSeeker™ and Holland Scientific Crop Circle™) improved corn yield prediction. Nitrogen rate experiments were established at 15 sites in North Dakota (ND). Sensor readings were conducted at V6 and V12 corn. Red NDVI and red edge NDVI were similar in the relationship of readings with yield at V6. At V12, the red edge NDVI was superior to the red NDVI in most comparisons, indicating that it would be most useful in developing late-season N application algorithms.

  7. Active-Optical Sensors Using Red NDVI Compared to Red Edge NDVI for Prediction of Corn Grain Yield in North Dakota, U.S.A.

    Science.gov (United States)

    Sharma, Lakesh K.; Bu, Honggang; Denton, Anne; Franzen, David W.

    2015-01-01

    Active-optical sensor readings from an N non-limiting area standard established within a farm field are used to predict yield in the standard. Lower yield predictions from sensor readings obtained from other parts of the field outside of the N non-limiting standard area indicate a need for supplemental N. Active-optical sensor algorithms for predicting corn (Zea mays, L.) yield to direct in-season nitrogen (N) fertilization in corn utilize red NDVI (normalized differential vegetative index). Use of red edge NDVI might improve corn yield prediction at later growth stages when corn leaves cover the inter-row space resulting in “saturation” of red NDVI readings. The purpose of this study was to determine whether the use of red edge NDVI in two active-optical sensors (GreenSeeker™ and Holland Scientific Crop Circle™) improved corn yield prediction. Nitrogen rate experiments were established at 15 sites in North Dakota (ND). Sensor readings were conducted at V6 and V12 corn. Red NDVI and red edge NDVI were similar in the relationship of readings with yield at V6. At V12, the red edge NDVI was superior to the red NDVI in most comparisons, indicating that it would be most useful in developing late-season N application algorithms. PMID:26540057

  8. Quality assurance and irradiation studies on CMS silicon strip sensors

    CERN Document Server

    Furgeri, Alexander

    The high luminosity at the Large Hadron Collider at the European Particle Physics Laboratory CERN in Geneva causes a harsh radiation environment for the detectors. The most inner layers of the tracker are irradiated to an equivalent fluence of 1.6e14 1MeV-neutrons per cmˆ2. The radiation causes damage in the silicon lattice of the sensors. This increases the leakage current and changes the full depletion voltage. Both of these parameters are after irradiation neither stable with time nor with temperatures above 0oC. This thesis presents the changes of the leakage currents, the full depletion voltages, and all strip parameters of the sensors after proton and neutron irradiation. After irradiation annealing studies have been carried out. All observed effects are used to simulate the evolution of full depletion voltage for different annealing times and annealing temperatures in order to keep the power consumption as low as possible. From the observed radiation damage and annealing effects the sensors of the tra...

  9. P-stop isolation study of irradiated n-in-p type silicon strip sensors for harsh radiation environment

    CERN Document Server

    AUTHOR|(CDS)2084505

    2015-01-01

    In order to determine the most radiation hard silicon sensors for the CMS Experiment after the Phase II Upgrade in 2023 a comprehensive study of silicon sensors after a fluence of up to $1.5\\times10^{15} n_{eq}/cm^{2}$ corresponding to $3000 fb^{-1}$ after the HL-LHC era has been carried out. The results led to the decision that the future Outer Tracker (20~cm${<}R{<}$110~cm) of CMS will consist of n-in-p type sensors. This technology is more radiation hard but also the manufacturing is more challenging compared to p-in-n type sensors due to additional process steps in order to suppress the accumulation of electrons between the readout strips. One possible isolation technique of adjacent strips is the p-stop structure which is a p-type material implantation with a certain pattern for each individual strip. However, electrical breakdown and charge collection studies indicate that the process parameters of the p-stop structure have to be carefully calibrated in order to achieve a sufficient strip isolatio...

  10. Insertable B-Layer integration in the ATLAS experiment and development of future 3D silicon pixel sensors

    CERN Document Server

    AUTHOR|(INSPIRE)INSPIRE-00371528; Røhne, Ole

    This work has two distinct objectives: the development of software for the integration of the Insertable B-Layer (IBL) in the ATLAS offline software framework and the study of the performance of 3D silicon sensors produced by SINTEF for future silicon pixel detectors. The former task consists in the implementation of the IBL byte stream converter. This offline tool performs the decoding of the binary-formatted data coming from the detector into information (e.g. hit position and Time over Threshold) that is stored in a format used in the reconstruction data flow. It also encodes the information extracted from simulations into a simulated IBL byte stream. The tool has been successfully used since the beginning of the LHC Run II data taking. The experimental work on SINTEF 3D sensors was performed in the framework of the development of pixel sensors for the next generation of tracking detectors. Preliminary tests on SINTEF 3D sensors showed that the majority of these devices suffers from high leakage currents, ...

  11. Size of silicon strip sensor from 6 inch wafer (right) compared to that from a 4 inch wafer (left).

    CERN Multimedia

    Honma, Alan

    1999-01-01

    Silicon strip sensors made from 6 inch wafers will allow for much larger surface area coverage at a reduced cost per unit surface area. A prototype sensor of size 8cm x 11cm made by Hamamatsu from a 6 inch wafer is shown next to a traditional 6cm x 6cm sensor from a 4 inch wafer.

  12. Development of edgeless n-on-p planar pixel sensors for future ATLAS upgrades

    Energy Technology Data Exchange (ETDEWEB)

    Bomben, Marco, E-mail: marco.bomben@cern.ch [Laboratoire de Physique Nucleaire et de Hautes Énergies (LPNHE) Paris (France); Bagolini, Alvise; Boscardin, Maurizio [Fondazione Bruno Kessler, Centro per i Materiali e i Microsistemi (FBK-CMM) Povo di Trento (Italy); Bosisio, Luciano [Università di Trieste, Dipartimento di Fisica and INFN, Trieste (Italy); Calderini, Giovanni [Laboratoire de Physique Nucleaire et de Hautes Énergies (LPNHE) Paris (France); Dipartimento di Fisica E. Fermi, Università di Pisa, and INFN Sez. di Pisa, Pisa (Italy); Chauveau, Jacques [Laboratoire de Physique Nucleaire et de Hautes Énergies (LPNHE) Paris (France); Giacomini, Gabriele [Fondazione Bruno Kessler, Centro per i Materiali e i Microsistemi (FBK-CMM) Povo di Trento (Italy); La Rosa, Alessandro [Section de Physique (DPNC), Université de Genève, Genève (Switzerland); Marchiori, Giovanni [Laboratoire de Physique Nucleaire et de Hautes Énergies (LPNHE) Paris (France); Zorzi, Nicola [Fondazione Bruno Kessler, Centro per i Materiali e i Microsistemi (FBK-CMM) Povo di Trento (Italy)

    2013-06-01

    The development of n-on-p “edgeless” planar pixel sensors being fabricated at FBK (Trento, Italy), aimed at the upgrade of the ATLAS Inner Detector for the High Luminosity phase of the Large Hadron Collider (HL-LHC), is reported. A characterizing feature of the devices is the reduced dead area at the edge, achieved by adopting the “active edge” technology, based on a deep etched trench, suitably doped to make an ohmic contact to the substrate. The project is presented, along with the active edge process, the sensor design for this first n-on-p production and a selection of simulation results, including the expected charge collection efficiency after radiation fluence of 1×10{sup 15}n{sub eq}/cm{sup 2} comparable to those expected at HL-LHC (about ten years of running, with an integrated luminosity of 3000 fb{sup −1}) for the outer pixel layers. We show that, after irradiation and at a bias voltage of 500 V, more than 50% of the signal should be collected in the edge region; this confirms the validity of the active edge approach. -- Highlights: ► We conceive n-on-p edgeless planar silicon sensors. ► These sensors are aimed at the Phase-II of the ATLAS experiment. ► Simulations show sensors can be operated well in overdepletion. ► Simulations show the sensor capability to collect charge at the periphery. ► Simulations prove the above statements to be true even after irradiation.

  13. Spatial asymmetry in tactile sensor skin deformation aids perception of edge orientation during haptic exploration.

    Science.gov (United States)

    Ponce Wong, Ruben D; Hellman, Randall B; Santos, Veronica J

    2014-01-01

    Upper-limb amputees rely primarily on visual feedback when using their prostheses to interact with others or objects in their environment. A constant reliance upon visual feedback can be mentally exhausting and does not suffice for many activities when line-of-sight is unavailable. Upper-limb amputees could greatly benefit from the ability to perceive edges, one of the most salient features of 3D shape, through touch alone. We present an approach for estimating edge orientation with respect to an artificial fingertip through haptic exploration using a multimodal tactile sensor on a robot hand. Key parameters from the tactile signals for each of four exploratory procedures were used as inputs to a support vector regression model. Edge orientation angles ranging from -90 to 90 degrees were estimated with an 85-input model having an R (2) of 0.99 and RMS error of 5.08 degrees. Electrode impedance signals provided the most useful inputs by encoding spatially asymmetric skin deformation across the entire fingertip. Interestingly, sensor regions that were not in direct contact with the stimulus provided particularly useful information. Methods described here could pave the way for semi-autonomous capabilities in prosthetic or robotic hands during haptic exploration, especially when visual feedback is unavailable.

  14. 1 kHz 2D Visual Motion Sensor Using 20 × 20 Silicon Retina Optical Sensor and DSP Microcontroller.

    Science.gov (United States)

    Liu, Shih-Chii; Yang, MinHao; Steiner, Andreas; Moeckel, Rico; Delbruck, Tobi

    2015-04-01

    Optical flow sensors have been a long running theme in neuromorphic vision sensors which include circuits that implement the local background intensity adaptation mechanism seen in biological retinas. This paper reports a bio-inspired optical motion sensor aimed towards miniature robotic and aerial platforms. It combines a 20 × 20 continuous-time CMOS silicon retina vision sensor with a DSP microcontroller. The retina sensor has pixels that have local gain control and adapt to background lighting. The system allows the user to validate various motion algorithms without building dedicated custom solutions. Measurements are presented to show that the system can compute global 2D translational motion from complex natural scenes using one particular algorithm: the image interpolation algorithm (I2A). With this algorithm, the system can compute global translational motion vectors at a sample rate of 1 kHz, for speeds up to ±1000 pixels/s, using less than 5 k instruction cycles (12 instructions per pixel) per frame. At 1 kHz sample rate the DSP is 12% occupied with motion computation. The sensor is implemented as a 6 g PCB consuming 170 mW of power.

  15. Transparent amorphous silicon sensors for the alignment system of particle detectors

    Energy Technology Data Exchange (ETDEWEB)

    Fernandez, M.G. [Ciemat, Madrid (Spain)

    1999-07-01

    In this document we will present a historical review of ALMY sensors. The starting point was 1993 when the first prototypes were built. A description of their performance at this early stage will make clear which features have to be modified in order to cope with the stringent requirements imposed by ATLAS and CMS. As time went by, the problems were fixed and nowadays a fine working and operational ALMY sensor has been built. The following sections of this paper show how these aims were achieved. In section 2 the reader will know where and when ALMY sensors were born. It explains some reasons why amorphous silicon was chosen as photosensitive material. Section 3 intends to describe the morphology and physical properties of this device. Next sections present results from the diverse characterizations from ATLAS and CMS. Particularly, section 4 deals with the uniformity and spatial resolution of the first prototypes. Details on the light transmission after one sensor are given in section 5. The different radiation hardness tests for ALMYs are introduced in section 6. The propagation of a plane wave through the different layers helps to understand the origin of the systematics found in the first prototypes (section 7). The performance of the new ALMY sensors is presented in section 8. (author)

  16. Transparent amorphous silicon sensors for the alignment system of particle detectors

    International Nuclear Information System (INIS)

    Fernandez, M.G.

    1999-01-01

    In this document we will present a historical review of ALMY sensors. The starting point was 1993 when the first prototypes were built. A description of their performance at this early stage will make clear which features have to be modified in order to cope with the stringent requirements imposed by ATLAS and CMS. As time went by, the problems were fixed and nowadays a fine working and operational ALMY sensor has been built. The following sections of this paper show how these aims were achieved. In section 2 the reader will know where and when ALMY sensors were born. It explains some reasons why amorphous silicon was chosen as photosensitive material. Section 3 intends to describe the morphology and physical properties of this device. Next sections present results from the diverse characterizations from ATLAS and CMS. Particularly, section 4 deals with the uniformity and spatial resolution of the first prototypes. Details on the light transmission after one sensor are given in section 5. The different radiation hardness tests for ALMYs are introduced in section 6. The propagation of a plane wave through the different layers helps to understand the origin of the systematics found in the first prototypes (section 7). The performance of the new ALMY sensors is presented in section 8. (author)

  17. A Low Mass On-Chip Readout Scheme for Double-Sided Silicon Strip Detectors

    Energy Technology Data Exchange (ETDEWEB)

    Irmler, C., E-mail: christian.irmler@oeaw.ac.at [HEPHY Vienna – Institute of High Energy Physics of the Austrian Academy of Sciences, Nikolsdorfer Gasse 18, A-1050 Vienna (Austria); Bergauer, T.; Frankenberger, A.; Friedl, M.; Gfall, I. [HEPHY Vienna – Institute of High Energy Physics of the Austrian Academy of Sciences, Nikolsdorfer Gasse 18, A-1050 Vienna (Austria); Higuchi, T. [University of Tokyo, Kavli Institute for Physics and Mathematics of the Universe, 5-1-5 Kashiwanoha, Kashiwa, Chiba 277-8583 (Japan); Ishikawa, A. [Tohoku University, Department of Physics, Aoba Aramaki Aoba-ku, Sendai 980-8578 (Japan); Joo, C. [Seoul National University, High Energy Physics Laboratory, 25-107 Shinlim-dong, Kwanak-gu, Seoul 151-742 (Korea, Republic of); Kah, D.H.; Kang, K.H. [Kyungpook National University, Department of Physics, 1370 Sankyuk Dong, Buk Gu, Daegu 702-701 (Korea, Republic of); Rao, K.K. [Tata Institute of Fundamental Research, Experimental High Energy Physics Group, Homi Bhabha Road, Mumbai 400 005 (India); Kato, E. [Tohoku University, Department of Physics, Aoba Aramaki Aoba-ku, Sendai 980-8578 (Japan); Mohanty, G.B. [Tata Institute of Fundamental Research, Experimental High Energy Physics Group, Homi Bhabha Road, Mumbai 400 005 (India); Negishi, K. [Tohoku University, Department of Physics, Aoba Aramaki Aoba-ku, Sendai 980-8578 (Japan); Onuki, Y.; Shimizu, N. [University of Tokyo, Department of Physics, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-0033 (Japan); Tsuboyama, T. [KEK, 1-1 Oho, Tsukuba, Ibaraki 305-0801 (Japan); Valentan, M. [HEPHY Vienna – Institute of High Energy Physics of the Austrian Academy of Sciences, Nikolsdorfer Gasse 18, A-1050 Vienna (Austria)

    2013-12-21

    B-factories like the KEKB in Tsukuba, Japan, operate at relatively low energies and thus require detectors with very low material budget in order to minimize multiple scattering. On the other hand, front-end chips with short shaping time like the APV25 have to be placed as close to the sensor strips as possible to reduce the capacitive load, which mainly determines the noise figure. In order to achieve both – minimal material budget and low noise – we developed a readout scheme for double-sided silicon detectors, where the APV25 chips are placed on a flexible circuit, which is glued onto the top side of the sensor. The bottom-side strips are connected by two flexible circuits, which are bent around the edge of the sensor. This so-called “Origami” design will be utilized to build the Silicon Vertex Detector of the Belle II experiment, which will consist of four layers made from ladders with up to five double-sided silicon strip sensors in a row. Each ladder will be supported by two ribs made of a carbon fiber and Airex foam core sandwich. The heat dissipated by the front-end chips will be removed by a highly efficient two-phase CO{sub 2} system. Thanks to the Origami concept, all APV25 chips are aligned in a row and thus can be cooled by a single thin cooling pipe per ladder. We present the concept and the assembly procedure of the Origami chip-on-sensor modules.

  18. A Low Mass On-Chip Readout Scheme for Double-Sided Silicon Strip Detectors

    International Nuclear Information System (INIS)

    Irmler, C.; Bergauer, T.; Frankenberger, A.; Friedl, M.; Gfall, I.; Higuchi, T.; Ishikawa, A.; Joo, C.; Kah, D.H.; Kang, K.H.; Rao, K.K.; Kato, E.; Mohanty, G.B.; Negishi, K.; Onuki, Y.; Shimizu, N.; Tsuboyama, T.; Valentan, M.

    2013-01-01

    B-factories like the KEKB in Tsukuba, Japan, operate at relatively low energies and thus require detectors with very low material budget in order to minimize multiple scattering. On the other hand, front-end chips with short shaping time like the APV25 have to be placed as close to the sensor strips as possible to reduce the capacitive load, which mainly determines the noise figure. In order to achieve both – minimal material budget and low noise – we developed a readout scheme for double-sided silicon detectors, where the APV25 chips are placed on a flexible circuit, which is glued onto the top side of the sensor. The bottom-side strips are connected by two flexible circuits, which are bent around the edge of the sensor. This so-called “Origami” design will be utilized to build the Silicon Vertex Detector of the Belle II experiment, which will consist of four layers made from ladders with up to five double-sided silicon strip sensors in a row. Each ladder will be supported by two ribs made of a carbon fiber and Airex foam core sandwich. The heat dissipated by the front-end chips will be removed by a highly efficient two-phase CO 2 system. Thanks to the Origami concept, all APV25 chips are aligned in a row and thus can be cooled by a single thin cooling pipe per ladder. We present the concept and the assembly procedure of the Origami chip-on-sensor modules

  19. Characterization of silicon micro-strip sensors with a pulsed infra-red laser system for the CBM experiment at FAIR

    International Nuclear Information System (INIS)

    Ghosh, P.

    2015-01-01

    The Compressed Baryonic Matter (CBM) experiment at FAIR is composed of 8 tracking stations consisting of 1292 double sided silicon micro-strip sensors. For the quality assurance of produced prototype sensors a laser test system (LTS) has been developed. The aim of the LTS is to scan sensors with a pulsed infra-red laser driven by step motor to determine the charge sharing in-between strips and to measure qualitative uniformity of the sensor response over the whole active area. The prototype sensors which are tested with the LTS so far have 256 strips with a pitch of 50 μm on each side. They are read-out using a self-triggering prototype read-out electronic ASIC called n-XYTER. The LTS is designed to measure sensor response in an automatized procedure at several thousand positions across the sensor with focused infra-red laser light (spot size ≈ 12 μm , wavelength = 1060 nm). The pulse with duration (≈ 10 ns) and power (≈ 5 mW) of the laser pulses is selected such, that the absorption of the laser light in the 300 μm thick silicon sensors produces a number of about 24000 electrons, which is similar to the charge created by minimum ionizing particles (MIP) in these sensors. Laser scans different prototype sensors is reported

  20. Charge losses in silicon sensors and electric-field studies at the Si-SiO2 interface

    International Nuclear Information System (INIS)

    Poehlsen, Thomas

    2013-07-01

    Electric fields and charge losses in silicon sensors before and after irradiation with x-rays, protons, neutrons or mixed irradiation are studied in charge-collection measurements. Electron-hole pairs (eh pairs) are generated at different positions in the sensor using sub-ns pulsed laser light of different wavelengths. Light of 1063 nm, 830 nm and 660 nm wavelength is used to generate eh pairs along the whole sensor depth, a few μm below the surface and very close to the surface, respectively. Segmented p + n silicon strip sensors are used to study the electric field below the SiO 2 separating the strip implants. The sensors are investigated before and after irradiation with 12 keV X-rays to a dose of 1 MGy. It is found that the electric field close to the Si-SiO 2 interface depends on both the irradiation dose and the biasing history. For the non-irradiated sensors the observed dependence of the electric field on biasing history and humidity is qualitatively as expected from simulations of the electrostatic potential for different boundary conditions at the surface. Depending on the biasing history incomplete collection of electrons, full charge collection or incomplete collection of holes is observed. After the bias voltage is changed, the amount of observed charge losses is time dependent with time constants being a function of humidity. For the irradiated sensors an increased effective oxide charge density and more electron losses are observed compared to the non-irradiated sensors. Due to positive oxide charges which are always present at the Si-SiO 2 interface an electronaccumulation layer forms, if the oxide charge is not compensated by charges on top of the passivation. If negative charges overcompensate the oxide charge, a hole-accumulation layer forms. In both cases the number of accumulated charges can be temporarily increased by incomplete charge collection of either electrons or holes. How many additional charge carriers can be added to the

  1. Hydrogenated amorphous silicon sensors based on thin film on ASIC technology

    CERN Document Server

    Despeisse, M; Anelli, G; Jarron, P; Kaplon, J; Rusack, R; Saramad, S; Wyrsch, N

    2006-01-01

    The performance and limitations of a novel detector technology based on the deposition of a thin-film sensor on top of processed integrated circuits have been studied. Hydrogenated amorphous silicon (a-Si:H) films have been deposited on top of CMOS circuits developed for these studies and the resulting "thin-film on ASIC" (TFA) detectors are presented. The leakage current of the a-Si:H sensor at high reverse biases turns out to be an important parameter limiting the performance of a TFA detector. Its detailed study and the pixel segmentation of the detector are presented. High internal electric fields (in the order of 10/sup 4/-10/sup 5/ V/cm) can be built in the a-Si:H sensor and overcome the low mobility of electrons and holes in a-Si:H. Signal induction by generated carrier motion and speed in the a-Si:H sensor have been studied with a 660 nm pulsed laser on a TFA detector based on an ASIC integrating 5 ns peaking time pre- amplifiers. The measurement set-up also permits to study the depletion of the senso...

  2. Suppression of excess noise in Transition-Edge Sensors using magnetic field and geometry

    International Nuclear Information System (INIS)

    Ullom, J.N.; Doriese, W.B.; Hilton, G.C.; Beall, J.A.; Deiker, S.; Irwin, K.D.; Reintsema, C.D.; Vale, L.R.; Xu, Y.

    2004-01-01

    We report recent progress at NIST on Mo/Cu Transition-Edge Sensors (TESs). While the signal-band noise of our sensors agrees with theory, we observe excess high-frequency noise. We describe this noise and demonstrate that it can be strongly suppressed by a magnetic field perpendicular to the plane of the sensor. Both the excess noise and α=(T/R)(dR/dT) depend strongly on field so our results show that accurate comparisons between devices are only possible when the field is well known or constant. We also present results showing the noise performance of TES designs incorporating parallel and perpendicular normal metal bars, an array of normal metal islands, and in wedge-shaped devices. We demonstrate significant reduction of high-frequency noise with the perpendicular bar devices at the cost of reduced α. Both the bars and the magnetic field are useful noise reduction techniques for bolometers

  3. Analytical expressions for transition edge sensor excess noise models

    International Nuclear Information System (INIS)

    Brandt, Daniel; Fraser, George W.

    2010-01-01

    Transition edge sensors (TESs) are high-sensitivity thermometers used in cryogenic microcalorimeters which exploit the steep gradient in resistivity with temperature during the superconducting phase transition. Practical TES devices tend to exhibit a white noise of uncertain origin, arising inside the device. We discuss two candidate models for this excess noise, phase slip shot noise (PSSN) and percolation noise. We extend the existing PSSN model to include a magnetic field dependence and derive a basic analytical model for percolation noise. We compare the predicted functional forms of the noise current vs. resistivity curves of both models with experimental data and provide a set of equations for both models to facilitate future experimental efforts to clearly identify the source of excess noise.

  4. Development of X-ray microcalorimeters using transition edge sensors

    International Nuclear Information System (INIS)

    Ukibe, M; Hirayama, F.; Tanaka, K.; Koyanagi, M.; Ohkubo, M.; Kobayashi, N.; Morooka, T.; Chinone, K.

    2000-01-01

    We are developing X-ray microcalorimeters using superconducting transition edge sensors (TESs), which can be operated at relatively high temperatures in a 3 He cryostat, and DC-SQUID current amplifiers to realize an X-ray spectroscopy with a high energy resolution and a high counting rate. The TESs are proximity bilayers of Ti and Au on SiN x membranes with 500-1000 nm thicknesses. The typical TES has a T c value of 0.4 K and a ΔT c value of 2 mK. Two types of DC-SQUID amplifiers were developed; the single stage with 200-series SQUIDs and the double stage with an input SQUID and 50-series SQUIDs. The X-ray detection experiment is in progress. (author)

  5. Transition-edge sensor arrays for UV-optical-IR astrophysics

    International Nuclear Information System (INIS)

    Burney, J.; Bay, T.J.; Barral, J.; Brink, P.L.; Cabrera, B.; Castle, J.P.; Miller, A.J.; Nam, S.; Rosenberg, D.; Romani, R.W.; Tomada, A.

    2006-01-01

    Our research group has developed and characterized transition-edge sensor (TES) arrays for near IR-optical-near UV astrophysical observations. These detectors have a time-stamp accuracy of 0.3μs and an energy resolution of 0.16eV for 2.33eV photons at very high rates (30kHz). We have installed a 6x6 array of these TESs in an adiabatic demagnetization refrigerator equipped with windows for direct imaging. We discuss new instrumentation progress and current data in all aspects related to successful operation of this camera system, including: detector and array performance, position dependence and cross-talk, low-temperature and readout electronics, quantum and system efficiency, IR filtering, and focus and imaging

  6. Improved sensing characteristics of dual-gate transistor sensor using silicon nanowire arrays defined by nanoimprint lithography

    Science.gov (United States)

    Lim, Cheol-Min; Lee, In-Kyu; Lee, Ki Joong; Oh, Young Kyoung; Shin, Yong-Beom; Cho, Won-Ju

    2017-12-01

    This work describes the construction of a sensitive, stable, and label-free sensor based on a dual-gate field-effect transistor (DG FET), in which uniformly distributed and size-controlled silicon nanowire (SiNW) arrays by nanoimprint lithography act as conductor channels. Compared to previous DG FETs with a planar-type silicon channel layer, the constructed SiNW DG FETs exhibited superior electrical properties including a higher capacitive-coupling ratio of 18.0 and a lower off-state leakage current under high-temperature stress. In addition, while the conventional planar single-gate (SG) FET- and planar DG FET-based pH sensors showed the sensitivities of 56.7 mV/pH and 439.3 mV/pH, respectively, the SiNW DG FET-based pH sensors showed not only a higher sensitivity of 984.1 mV/pH, but also a lower drift rate of 0.8% for pH-sensitivity. This demonstrates that the SiNW DG FETs simultaneously achieve high sensitivity and stability, with significant potential for future biosensing applications.

  7. Cryogenic, Absolute, High Pressure Sensor

    Science.gov (United States)

    Chapman, John J. (Inventor); Shams. Qamar A. (Inventor); Powers, William T. (Inventor)

    2001-01-01

    A pressure sensor is provided for cryogenic, high pressure applications. A highly doped silicon piezoresistive pressure sensor is bonded to a silicon substrate in an absolute pressure sensing configuration. The absolute pressure sensor is bonded to an aluminum nitride substrate. Aluminum nitride has appropriate coefficient of thermal expansion for use with highly doped silicon at cryogenic temperatures. A group of sensors, either two sensors on two substrates or four sensors on a single substrate are packaged in a pressure vessel.

  8. Cryogenic High Pressure Sensor Module

    Science.gov (United States)

    Chapman, John J. (Inventor); Shams, Qamar A. (Inventor); Powers, William T. (Inventor)

    1999-01-01

    A pressure sensor is provided for cryogenic, high pressure applications. A highly doped silicon piezoresistive pressure sensor is bonded to a silicon substrate in an absolute pressure sensing configuration. The absolute pressure sensor is bonded to an aluminum nitride substrate. Aluminum nitride has appropriate coefficient of thermal expansion for use with highly doped silicon at cryogenic temperatures. A group of sensors, either two sensors on two substrates or four sensors on a single substrate are packaged in a pressure vessel.

  9. Transition-edge sensor imaging arrays for astrophysics applications

    Science.gov (United States)

    Burney, Jennifer Anne

    Many interesting objects in our universe currently elude observation in the optical band: they are too faint or they vary rapidly and thus any structure in their radiation is lost over the period of an exposure. Conventional photon detectors cannot simultaneously provide energy resolution and time-stamping of individual photons at fast rates. Superconducting detectors have recently made the possibility of simultaneous photon counting, imaging, and energy resolution a reality. Our research group has pioneered the use of one such detector, the Transition-Edge Sensor (TES). TES physics is simple and elegant. A thin superconducting film, biased at its critical temperature, can act as a particle detector: an incident particle deposits energy and drives the film into its superconducting-normal transition. By inductively coupling the detector to a SQUID amplifier circuit, this resistance change can be read out as a current pulse, and its energy deduced by integrating over the pulse. TESs can be used to accurately time-stamp (to 0.1 [mu]s) and energy-resolve (0.15 eV at 1.6 eV) near-IR/visible/near-UV photons at rates of 30~kHz. The first astronomical observations using fiber-coupled detectors were made at the Stanford Student Observatory 0.6~m telescope in 1999. Further observations of the Crab Pulsar from the 107" telescope at the University of Texas McDonald Observatory showed rapid phase variations over the near-IR/visible/near-UV band. These preliminary observations provided a glimpse into a new realm of observations of pulsars, binary systems, and accreting black holes promised by TES arrays. This thesis describes the development, characterization, and preliminary use of the first camera system based on Transition-Edge Sensors. While single-device operation is relatively well-understood, the operation of a full imaging array poses significant challenges. This thesis addresses all aspects related to the creation and characterization of this cryogenic imaging

  10. Ship Sensor Observations for Life on the Edge 2003: Exploring Deep Ocean Habitats - Office of Ocean Exploration

    Data.gov (United States)

    National Oceanic and Atmospheric Administration, Department of Commerce — Hourly measurements made by selected ship sensors on the R/V Seward Johnson during the "Life on the Edge 2003: Exploring Deep Ocean Habitats" expedition sponsored by...

  11. Distributed transition-edge sensors for linearized position response in a phonon-mediated X-ray imaging spectrometer

    Science.gov (United States)

    Cabrera, Blas; Brink, Paul L.; Leman, Steven W.; Castle, Joseph P.; Tomada, Astrid; Young, Betty A.; Martínez-Galarce, Dennis S.; Stern, Robert A.; Deiker, Steve; Irwin, Kent D.

    2004-03-01

    For future solar X-ray satellite missions, we are developing a phonon-mediated macro-pixel composed of a Ge crystal absorber with four superconducting transition-edge sensors (TES) distributed on the backside. The X-rays are absorbed on the opposite side and the energy is converted into phonons, which are absorbed into the four TES sensors. By connecting together parallel elements into four channels, fractional total energy absorbed between two of the sensors provides x-position information and the other two provide y-position information. We determine the optimal distribution for the TES sub-elements to obtain linear position information while minimizing the degradation of energy resolution.

  12. Laterally Driven Resonant Pressure Sensor with Etched Silicon Dual Diaphragms and Combined Beams

    Directory of Open Access Journals (Sweden)

    Xiaohui Du

    2016-01-01

    Full Text Available A novel structure of the resonant pressure sensor is presented in this paper, which tactfully employs intercoupling between dual pressure-sensing diaphragms and a laterally driven resonant strain gauge. After the resonant pressure sensor principle is introduced, the coupling mechanism of the diaphragms and resonator is analyzed and the frequency equation of the resonator based on the triangle geometry theory is developed for this new coupling structure. The finite element (FE simulation results match the theoretical analysis over the full scale of the device. This pressure sensor was first fabricated by dry/wet etching and thermal silicon bonding, followed by vacuum-packaging using anodic bonding technology. The test maximum error of the fabricated sensor is 0.0310%F.S. (full scale in the range of 30 to 190 kPa, its pressure sensitivity is negative and exceeding 8 Hz/kPa, and its Q-factor reaches 20,000 after wafer vacuum-packaging. A novel resonant pressure sensor with high accuracy is presented in this paper.

  13. Antenna-coupled bolometer arrays using transition-edge sensors

    Energy Technology Data Exchange (ETDEWEB)

    Myers, Michael J. [Department of Physics, University of California, Berkeley, California 94720 (United States)]. E-mail: mmyers@cosmology.berkeley.edu; Ade, Peter [School of Physics and Astronomy, Cardiff University, Cardiff, Wales (United Kingdom); Arnold, Kam [Department of Physics, University of California, Berkeley, California 94720 (United States); Engargiola, Greg [Department of Astronomy, University of California, Berkeley, California 94720 (United States); Holzapfel, Bill [Department of Physics, University of California, Berkeley, California 94720 (United States); Lee, Adrian T. [Department of Physics, University of California, Berkeley, California 94720 (United States); O' Brient, Roger [Department of Physics, University of California, Berkeley, California 94720 (United States); Richards, Paul L. [Department of Physics, University of California, Berkeley, California 94720 (United States); Smith, Andy [Northrop Grumman, Redondo Beach, California 90278 (United States); Spieler, Helmuth [Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States); Tran, Huan T. [Department of Physics, University of California, Berkeley, California 94720 (United States)

    2006-04-15

    We are developing antenna-coupled Transition-Edge Sensor (TES) bolometer arrays for use in measurements of the CMB polarization. TES bolometers have many well-known advantages over conventional bolometers, such as increased speed, linearity, and the existence of readout multiplexers. Antenna-coupled bolometers use an on-chip planar antenna to couple light into the bolometer. The antenna directivity and polarization sensitivity, along with the potential for on-chip band defining filters and channelizing circuits, allow a significant increase in focal plane integration. This eliminates the bulky horns, quasioptical filters, dichroics, and polarizers which might otherwise be needed in a conventional bolometric system. This simplification will ease the construction of receivers with larger numbers of pixels. We report on the fabrication and optical testing of single antenna-coupled bolometer pixels with integrated band defining filters. We will also discuss current progress on fabrication of a bolometer array based on this design.

  14. Characterization of nanometer-thick polycrystalline silicon with phonon-boundary scattering enhanced thermoelectric properties and its application in infrared sensors.

    Science.gov (United States)

    Zhou, Huchuan; Kropelnicki, Piotr; Lee, Chengkuo

    2015-01-14

    Although significantly reducing the thermal conductivity of silicon nanowires has been reported, it remains a challenge to integrate silicon nanowires with structure materials and electrodes in the complementary metal-oxide-semiconductor (CMOS) process. In this paper, we investigated the thermal conductivity of nanometer-thick polycrystalline silicon (poly-Si) theoretically and experimentally. By leveraging the phonon-boundary scattering, the thermal conductivity of 52 nm thick poly-Si was measured as low as around 12 W mK(-1) which is only about 10% of the value of bulk single crystalline silicon. The ZT of n-doped and p-doped 52 nm thick poly-Si was measured as 0.067 and 0.024, respectively, while most previously reported data had values of about 0.02 and 0.01 for a poly-Si layer with a thickness of 0.5 μm and above. Thermopile infrared sensors comprising 128 pairs of thermocouples made of either n-doped or p-doped nanometer-thick poly-Si strips in a series connected by an aluminium (Al) metal interconnect layer are fabricated using microelectromechanical system (MEMS) technology. The measured vacuum specific detectivity (D*) of the n-doped and p-doped thermopile infrared (IR) sensors are 3.00 × 10(8) and 1.83 × 10(8) cm Hz(1/2) W(-1) for sensors of 52 nm thick poly-Si, and 5.75 × 10(7) and 3.95 × 10(7) cm Hz(1/2) W(-1) for sensors of 300 nm thick poly-Si, respectively. The outstanding thermoelectric properties indicate our approach is promising for diverse applications using ultrathin poly-Si technology.

  15. K- and L-edge X-ray absorption spectrum calculations of closed-shell carbon, silicon, germanium, and sulfur compounds using damped four-component density functional response theory.

    Science.gov (United States)

    Fransson, Thomas; Burdakova, Daria; Norman, Patrick

    2016-05-21

    X-ray absorption spectra of carbon, silicon, germanium, and sulfur compounds have been investigated by means of damped four-component density functional response theory. It is demonstrated that a reliable description of relativistic effects is obtained at both K- and L-edges. Notably, an excellent agreement with experimental results is obtained for L2,3-spectra-with spin-orbit effects well accounted for-also in cases when the experimental intensity ratio deviates from the statistical one of 2 : 1. The theoretical results are consistent with calculations using standard response theory as well as recently reported real-time propagation methods in time-dependent density functional theory, and the virtues of different approaches are discussed. As compared to silane and silicon tetrachloride, an anomalous error in the absolute energy is reported for the L2,3-spectrum of silicon tetrafluoride, amounting to an additional spectral shift of ∼1 eV. This anomaly is also observed for other exchange-correlation functionals, but it is seen neither at other silicon edges nor at the carbon K-edge of fluorine derivatives of ethene. Considering the series of molecules SiH4-XFX with X = 1, 2, 3, 4, a gradual divergence from interpolated experimental ionization potentials is observed at the level of Kohn-Sham density functional theory (DFT), and to a smaller extent with the use of Hartree-Fock. This anomalous error is thus attributed partly to difficulties in correctly emulating the electronic structure effects imposed by the very electronegative fluorines, and partly due to inconsistencies in the spurious electron self-repulsion in DFT. Substitution with one, or possibly two, fluorine atoms is estimated to yield small enough errors to allow for reliable interpretations and predictions of L2,3-spectra of more complex and extended silicon-based systems.

  16. Two-dimensional wavelet transform feature extraction for porous silicon chemical sensors.

    Science.gov (United States)

    Murguía, José S; Vergara, Alexander; Vargas-Olmos, Cecilia; Wong, Travis J; Fonollosa, Jordi; Huerta, Ramón

    2013-06-27

    Designing reliable, fast responding, highly sensitive, and low-power consuming chemo-sensory systems has long been a major goal in chemo-sensing. This goal, however, presents a difficult challenge because having a set of chemo-sensory detectors exhibiting all these aforementioned ideal conditions are still largely un-realizable to-date. This paper presents a unique perspective on capturing more in-depth insights into the physicochemical interactions of two distinct, selectively chemically modified porous silicon (pSi) film-based optical gas sensors by implementing an innovative, based on signal processing methodology, namely the two-dimensional discrete wavelet transform. Specifically, the method consists of using the two-dimensional discrete wavelet transform as a feature extraction method to capture the non-stationary behavior from the bi-dimensional pSi rugate sensor response. Utilizing a comprehensive set of measurements collected from each of the aforementioned optically based chemical sensors, we evaluate the significance of our approach on a complex, six-dimensional chemical analyte discrimination/quantification task problem. Due to the bi-dimensional aspects naturally governing the optical sensor response to chemical analytes, our findings provide evidence that the proposed feature extractor strategy may be a valuable tool to deepen our understanding of the performance of optically based chemical sensors as well as an important step toward attaining their implementation in more realistic chemo-sensing applications. Copyright © 2013 Elsevier B.V. All rights reserved.

  17. Quality control on planar n-in-n pixel sensors — Recent progress of ATLAS planar pixel sensors

    International Nuclear Information System (INIS)

    Klingenberg, R.

    2013-01-01

    To extend the physics reach of the Large Hadron Collider (LHC), upgrades to the accelerator are planned which will increase the peak luminosity by a factor 5–10. To cope with the increased occupancy and radiation damage, the ATLAS experiment plans to introduce an all-silicon inner tracker with the high luminosity upgrade (HL-LHC). To investigate the suitability of pixel sensors using the proven planar technology for the upgraded tracker, the ATLAS Upgrade Planar Pixel Sensor (PPS) R and D Project was established. Main areas of research are the performance of planar pixel sensors at highest fluences, the exploration of possibilities for cost reduction to enable the instrumentation of large areas, the achievement of slim or active edges to provide low geometric inefficiencies without the need for shingling of modules and the investigation of the operation of highly irradiated sensors at low thresholds to increase the efficiency. The Insertable b-layer (IBL) is the first upgrade project within the ATLAS experiment and will employ a new detector layer consisting of silicon pixel sensors, which were improved and prototyped in the framework of the planar pixel sensor R and D project. A special focus of this paper is the status of the development and testing of planar n-in-n pixel sensors including the quality control of the on-going series production and postprocessing of sensor wafers. A high yield of produced planar sensor wafers and FE-I4 double chip sensors after first steps of post-processing including under bump metallization and dicing is observed. -- Highlights: ► Prototypes of irradiated planar n-in-n sensors have been successfully tested under laboratory conditions. ► A quality assurance programme on the series production of planar sensors for the IBL has started. ► A high yield of double chip sensors during the series production is observed which are compatible to the specifications to this detector component.

  18. Experimental and numerical studies on the sensitivity of carbon fibre/silicone rubber composite sensors

    International Nuclear Information System (INIS)

    Yang, Lili; Ge, Yong; Zhu, Qinghua; Zhang, Ce; Wang, Zongpeng; Liu, Penghuan

    2012-01-01

    Flexible conductive composite sensors are of great importance for applications in structural monitoring due to their low cost, high durability and excellent compatibility. In this work, carbon fibre/silicone rubber composites were prepared and their sensitivity near the percolation threshold was investigated experimentally and theoretically. Results show that carbon fibre/silicone rubber composites have great mechanical and sensitivity even under high strain conditions. Two models based on the tunnelling effect and general effective medium theory were found to understand the sensitivity of composites with lower and higher fractions of carbon fibre. Moreover, the reversibility of the sensing performance is improved with the increase of carbon fibre addition. (paper)

  19. The silicon sensor for the compact muon solenoid tracker. Control of the fabrication process

    International Nuclear Information System (INIS)

    Manolescu, Florentina; Mihul, Alexandru; Macchiolo, Anna

    2005-01-01

    The Compact Muon Solenoid (CMS) is one of the experiments at the Large Hadron Collider (LHC) under construction at CERN. The inner tracking system of this experiment consists of the world largest Silicon Strip Tracker (SST). In total, 24,244 silicon sensors are implemented covering an area of 206 m 2 . To construct this large system and to ensure its functionality for the full lifetime of ten years under the hard LHC condition, a detailed quality assurance program has been developed. This paper describes the strategy of the Process Qualification Control to monitor the stability of the fabrication process throughout the production phase and the results obtained are shown. (authors)

  20. Development of phonon-mediated transition-edge-sensor x-ray detectors for use in astronomy

    Science.gov (United States)

    Leman, Steven W.

    Low temperature detectors have grown in popularity over the years for a variety of reasons. Reduced thermal noise and the associated reduction in statistical fluctuations improve signal to noise. Novel material properties at low temperature such as superconductivity can be exploited. And let us not forget easier access to cryogenic techniques, for example industry made and sold refrigerators eliminating the need for graduate students to make their own. In this thesis I discuss development of a novel phonon-mediated distributed transition-edge-sensor x-ray detector which would be useful for astrophysical studies such as magnetic recombination in the solar corona, the warm-hot intergalactic medium and surveys of clusters and groups of galaxies. The detector uses a large semiconductor absorber and Transition-Edge-Sensors (TESs) to readout the absorbed energy. Calorimetry is performed on individual photons and a partitioning of the energy between various TESs allows for position determination. Hence time varying astronomical sources can be spectroscopically studied and imaged. I will conclude with a discussion of the detector's performance and propose a next generation detector which could make significant improvements on the design discussed in this thesis.

  1. How cutting-edge technologies impact the design of electrochemical (bio)sensors for environmental analysis. A review.

    Science.gov (United States)

    Arduini, Fabiana; Cinti, Stefano; Scognamiglio, Viviana; Moscone, Danila; Palleschi, Giuseppe

    2017-03-22

    Through the years, scientists have developed cutting-edge technologies to make (bio)sensors more convenient for environmental analytical purposes. Technological advancements in the fields of material science, rational design, microfluidics, and sensor printing, have radically shaped biosensor technology, which is even more evident in the continuous development of sensing systems for the monitoring of hazardous chemicals. These efforts will be crucial in solving some of the problems constraining biosensors to reach real environmental applications, such as continuous analyses in field by means of multi-analyte portable devices. This review (with 203 refs.) covers the progress between 2010 and 2015 in the field of technologies enabling biosensor applications in environmental analysis, including i) printing technology, ii) nanomaterial technology, iii) nanomotors, iv) biomimetic design, and (v) microfluidics. Next section describes futuristic cutting-edge technologies that are gaining momentum in recent years, which furnish highly innovative aspects to biosensing devices. Copyright © 2016 Elsevier B.V. All rights reserved.

  2. Optimizing Transition Edge Sensors for High-Resolution X-ray Spectroscopy

    International Nuclear Information System (INIS)

    Saab, Tarek; Bandler, Simon R.; Boyce, Kevin; Chervenak, James A.; Figueroa-Feliciano, Enectali; Iyomoto, Naoko; Kelley, Richard L.; Kilbourne, Caroline A.; Porter, Frederick S.; Sadleir, John E.

    2006-01-01

    Transition Edge Sensors (TES) have found applications as astronomical detectors ranging from the microwave to the gamma ray energy bands. Each energy band, however, imposes a different set of requirements on the TES such as energy and timing resolution, focal plane coverage, and the mechanisms by which the signal is coupled to the detector. This paper focuses on the development of TESs optimized for the 0.1-10 keV energy range at the NASA Goddard Space Flight Center. Such detectors are suitable candidates for some of the upcoming X-ray observatories such as NeXT and Constellation-X. Ongoing efforts at producing, characterizing, and modeling such devices, as well as the latest results, are discussed

  3. Close up of the pick and place tool carrying a dummy silicon sensor.

    CERN Multimedia

    Bernd Surrow

    1999-01-01

    The gantry positioning head contains a vacuum pick-up system thatallows several different pick-up tools to be used. This one isdesigned to pick up the silicon sensors. The pick-up tool containsa pressure sensitive contact which can stop the motion of the machine when the tool touches a fixed object. The shiny cylinderis the end of the microscope optics of the CCD camera.

  4. Charge losses in silicon sensors and electric-field studies at the Si-SiO{sub 2} interface

    Energy Technology Data Exchange (ETDEWEB)

    Poehlsen, Thomas

    2013-07-15

    Electric fields and charge losses in silicon sensors before and after irradiation with x-rays, protons, neutrons or mixed irradiation are studied in charge-collection measurements. Electron-hole pairs (eh pairs) are generated at different positions in the sensor using sub-ns pulsed laser light of different wavelengths. Light of 1063 nm, 830 nm and 660 nm wavelength is used to generate eh pairs along the whole sensor depth, a few {mu}m below the surface and very close to the surface, respectively. Segmented p{sup +}n silicon strip sensors are used to study the electric field below the SiO{sub 2} separating the strip implants. The sensors are investigated before and after irradiation with 12 keV X-rays to a dose of 1 MGy. It is found that the electric field close to the Si-SiO{sub 2} interface depends on both the irradiation dose and the biasing history. For the non-irradiated sensors the observed dependence of the electric field on biasing history and humidity is qualitatively as expected from simulations of the electrostatic potential for different boundary conditions at the surface. Depending on the biasing history incomplete collection of electrons, full charge collection or incomplete collection of holes is observed. After the bias voltage is changed, the amount of observed charge losses is time dependent with time constants being a function of humidity. For the irradiated sensors an increased effective oxide charge density and more electron losses are observed compared to the non-irradiated sensors. Due to positive oxide charges which are always present at the Si-SiO{sub 2} interface an electronaccumulation layer forms, if the oxide charge is not compensated by charges on top of the passivation. If negative charges overcompensate the oxide charge, a hole-accumulation layer forms. In both cases the number of accumulated charges can be temporarily increased by incomplete charge collection of either electrons or holes. How many additional charge carriers can be

  5. Evaluation of local radiation damage in silicon sensor via charge collection mapping with the Timepix read-out chip

    International Nuclear Information System (INIS)

    Platkevic, M; Jakubek, J; Jakubek, M; Pospisil, S; Zemlicka, J; Havranek, V; Semian, V

    2013-01-01

    Studies of radiation hardness of silicon sensors are standardly performed with single-pad detectors evaluating their global electrical properties. In this work we introduce a technique to visualize and determine the spatial distribution of radiation damage across the area of a semiconductor sensor. The sensor properties such as charge collection efficiency and charge diffusion were evaluated locally at many points of the sensor creating 2D maps. For this purpose we used a silicon sensor bump bonded to the pixelated Timepix read-out chip. This device, operated in Time-over-threshold (TOT) mode, allows for the direct energy measurement in each pixel. Selected regions of the sensor were intentionally damaged by defined doses (up to 10 12 particles/cm 2 ) of energetic protons (of 2.5 and 4 MeV). The extent of the damage was measured in terms of the detector response to the same ions. This procedure was performed either on-line during irradiation or off-line after it. The response of the detector to each single particle was analyzed determining the charge collection efficiency and lateral charge diffusion. We evaluated the changes of these parameters as a function of radiation dose. These features are related to the local properties such as the spatial homogeneity of the sensor. The effect of radiation damage was also independently investigated measuring local changes of signal response to γ, and X rays and alpha particles.

  6. Oxygen defect processes in silicon and silicon germanium

    KAUST Repository

    Chroneos, A.

    2015-06-18

    Silicon and silicon germanium are the archetypical elemental and alloy semiconductor materials for nanoelectronic, sensor, and photovoltaic applications. The investigation of radiation induced defects involving oxygen, carbon, and intrinsic defects is important for the improvement of devices as these defects can have a deleterious impact on the properties of silicon and silicon germanium. In the present review, we mainly focus on oxygen-related defects and the impact of isovalent doping on their properties in silicon and silicon germanium. The efficacy of the isovalent doping strategies to constrain the oxygen-related defects is discussed in view of recent infrared spectroscopy and density functional theory studies.

  7. Oxygen defect processes in silicon and silicon germanium

    KAUST Repository

    Chroneos, A.; Sgourou, E. N.; Londos, C. A.; Schwingenschlö gl, Udo

    2015-01-01

    Silicon and silicon germanium are the archetypical elemental and alloy semiconductor materials for nanoelectronic, sensor, and photovoltaic applications. The investigation of radiation induced defects involving oxygen, carbon, and intrinsic defects is important for the improvement of devices as these defects can have a deleterious impact on the properties of silicon and silicon germanium. In the present review, we mainly focus on oxygen-related defects and the impact of isovalent doping on their properties in silicon and silicon germanium. The efficacy of the isovalent doping strategies to constrain the oxygen-related defects is discussed in view of recent infrared spectroscopy and density functional theory studies.

  8. Efficient Flame Detection and Early Warning Sensors on Combustible Materials Using Hierarchical Graphene Oxide/Silicone Coatings.

    Science.gov (United States)

    Wu, Qian; Gong, Li-Xiu; Li, Yang; Cao, Cheng-Fei; Tang, Long-Cheng; Wu, Lianbin; Zhao, Li; Zhang, Guo-Dong; Li, Shi-Neng; Gao, Jiefeng; Li, Yongjin; Mai, Yiu-Wing

    2018-01-23

    Design and development of smart sensors for rapid flame detection in postcombustion and early fire warning in precombustion situations are critically needed to improve the fire safety of combustible materials in many applications. Herein, we describe the fabrication of hierarchical coatings created by assembling a multilayered graphene oxide (GO)/silicone structure onto different combustible substrate materials. The resulting coatings exhibit distinct temperature-responsive electrical resistance change as efficient early warning sensors for detecting abnormal high environmental temperature, thus enabling fire prevention below the ignition temperature of combustible materials. After encountering a flame attack, we demonstrate extremely rapid flame detection response in 2-3 s and excellent flame self-extinguishing retardancy for the multilayered GO/silicone structure that can be synergistically transformed to a multiscale graphene/nanosilica protection layer. The hierarchical coatings developed are promising for fire prevention and protection applications in various critical fire risk and related perilous circumstances.

  9. Silicon telescope for prototype sensor characterisation using particle beam and cosmic rays

    CERN Multimedia

    Fu, Jinlin

    2016-01-01

    We present the design and the performance of a silicon strip telescope that we have built and recently used as reference tracking system for prototype sensor characterisation. The telescope was operated on beam at the CERN SPS and also using cosmic rays in the laboratory. We will describe the data acquisition system, based on a custom electronic board that we have developed, and the online monitoring system to control the quality of the data in real time.

  10. Evaluation of slim-edge, multi-guard, and punch-through-protection structures before and after proton irradiation

    Science.gov (United States)

    Mitsui, S.; Unno, Y.; Ikegami, Y.; Takubo, Y.; Terada, S.; Hara, K.; Takahashi, Y.; Jinnouchi, O.; Nagai, R.; Kishida, T.; Yorita, K.; Hanagaki, K.; Takashima, R.; Kamada, S.; Yamamura, K.

    2013-01-01

    Planar geometry silicon pixel and strip sensors for the high luminosity upgrade of the LHC (HL-LHC) require a high bias voltage of 1000 V in order to withstand a radiation damage caused by particle fluences of 1×1016 1 MeV neq/cm2 and 1×1015 1 MeV neq/cm2 for pixel and strip detectors, respectively. In order to minimize the inactive edge space that can withstand a bias voltage of 1000 V, edge regions susceptible to microdischarge (MD) should be carefully optimized. We fabricated diodes with various edge distances (slim-edge diodes) and with 1-3 multiple guard rings (multi-guard diodes). AC coupling insulators of strip sensors are vulnerable to sudden heavy charge deposition, such as an accidental beam splash, which may destroy the readout AC capacitors. Thus various types of punch-through-protection (PTP) structures were implemented in order to find the most effective structure to protect against heavy charge deposition. These samples were irradiated with 70 MeV protons at fluences of 5×1012 1 MeV neq/cm2-1×1016 1 MeV neq/cm2. Their performances were evaluated before and after irradiation in terms of an onset voltage of the MD, a turn-on voltage of the PTP, and PTP saturation resistance.

  11. 3D silicon pixel detectors for the ATLAS Forward Physics experiment

    International Nuclear Information System (INIS)

    Lange, J.; Cavallaro, E.; Grinstein, S.; Paz, I. López

    2015-01-01

    The ATLAS Forward Physics (AFP) project plans to install 3D silicon pixel detectors about 210 m away from the interaction point and very close to the beamline (2–3 mm). This implies the need of slim edges of about 100–200 μm width for the sensor side facing the beam to minimise the dead area. Another challenge is an expected non-uniform irradiation of the pixel sensors. It is studied if these requirements can be met using slightly-modified FE-I4 3D pixel sensors from the ATLAS Insertable B-Layer production. AFP-compatible slim edges are obtained with a simple diamond-saw cut. Electrical characterisations and beam tests are carried out and no detrimental impact on the leakage current and hit efficiency is observed. For devices without a 3D guard ring a remaining insensitive edge of less than 15 μm width is found. Moreover, 3D detectors are non-uniformly irradiated up to fluences of several 10 15 n eq /cm 2 with either a focussed 23 GeV proton beam or a 23 MeV proton beam through holes in Al masks. The efficiency in the irradiated region is found to be similar to the one in the non-irradiated region and exceeds 97% in case of favourable chip-parameter settings. Only in a narrow transition area at the edge of the hole in the Al mask, a significantly lower efficiency is seen. A follow-up study of this effect using arrays of small pad diodes for position-resolved dosimetry via the leakage current is carried out

  12. Nano-ridge fabrication by local oxidation of silicon edges with silicon nitride as a mask

    NARCIS (Netherlands)

    Haneveld, J.; Berenschot, Johan W.; Maury, P.A.; Jansen, Henricus V.

    2005-01-01

    A method to fabricate nano-ridges over a full wafer is presented. The fabrication method uses local oxidation of silicon, with silicon nitride as a mask, and wet anisotropic etching of silicon. The realized structures are 7-20 nm wide, 40-100 nm high and centimeters long. All dimensions are easily

  13. First characterization of the SPADnet sensor: a digital silicon photomultiplier for PET applications

    Science.gov (United States)

    Gros-Daillon, E.; Maingault, L.; André, L.; Reboud, V.; Verger, L.; Charbon, E.; Bruschini, C.; Veerappan, C.; Stoppa, D.; Massari, N.; Perenzoni, M.; Braga, L. H. C.; Gasparini, L.; Henderson, R. K.; Walker, R.; East, S.; Grant, L.; Jatekos, B.; Lorincz, E.; Ujhelyi, F.; Erdei, G.; Major, P.; Papp, Z.; Nemeth, G.

    2013-12-01

    Silicon Photomultipliers have the ability to replace photomultiplier tubes when used as light sensors in scintillation gamma-ray detectors. Their timing properties, compactness, and magnetic field compatibility make them interesting for use in Time-of-Flight Magnetic Resonance Imaging compatible Positron Emission Tomography. In this paper, we present a new fully digital Single Photon Avalanche Diode (SPAD) based detector fabricated in CMOS image sensor technology. It contains 16x8 pixels with a pitch of 610x571.2 μm2. The Dark Count Rate and the Photon Detection Probability of each SPAD has been measured and the homogeneity of these parameters in the entire 92000 SPAD array is shown. The sensor has been optically coupled to a single LYSO needle and a LYSO array. The scintillator crystal was irradiated with several gamma sources and the resulting images and energy spectra are presented.

  14. Observation, modeling, and temperature dependence of doubly peaked electric fields in irradiated silicon pixel sensors

    CERN Document Server

    Swartz, M.; Allkofer, Y.; Bortoletto, D.; Cremaldi, L.; Cucciarelli, S.; Dorokhov, A.; Hoermann, C.; Kim, D.; Konecki, M.; Kotlinski, D.; Prokofiev, Kirill; Regenfus, Christian; Rohe, T.; Sanders, D.A.; Son, S.; Speer, T.

    2006-01-01

    We show that doubly peaked electric fields are necessary to describe grazing-angle charge collection measurements of irradiated silicon pixel sensors. A model of irradiated silicon based upon two defect levels with opposite charge states and the trapping of charge carriers can be tuned to produce a good description of the measured charge collection profiles in the fluence range from 0.5x10^{14} Neq/cm^2 to 5.9x10^{14} Neq/cm^2. The model correctly predicts the variation in the profiles as the temperature is changed from -10C to -25C. The measured charge collection profiles are inconsistent with the linearly-varying electric fields predicted by the usual description based upon a uniform effective doping density. This observation calls into question the practice of using effective doping densities to characterize irradiated silicon.

  15. Miniaturized thermal flow sensor with planar-integrated sensor structures on semicircular surface channels

    NARCIS (Netherlands)

    Dijkstra, Marcel; de Boer, Meint J.; Berenschot, Johan W.; Lammerink, Theodorus S.J.; Wiegerink, Remco J.; Elwenspoek, Michael Curt

    2008-01-01

    A calorimetric miniaturized flow sensor was realized with a linear sensor response measured for water flow up to flow rates in the order of 300 nl min-1. A versatile technological concept is used to realize a sensor with a thermally isolated freely suspended silicon-rich silicon-nitride microchannel

  16. Temperature Induced Voltage Offset Drifts in Silicon Carbide Pressure Sensors

    Science.gov (United States)

    Okojie, Robert S.; Lukco, Dorothy; Nguyen, Vu; Savrun, Ender

    2012-01-01

    We report the reduction of transient drifts in the zero pressure offset voltage in silicon carbide (SiC) pressure sensors when operating at 600 C. The previously observed maximum drift of +/- 10 mV of the reference offset voltage at 600 C was reduced to within +/- 5 mV. The offset voltage drifts and bridge resistance changes over time at test temperature are explained in terms of the microstructure and phase changes occurring within the contact metallization, as analyzed by Auger electron spectroscopy and field emission scanning electron microscopy. The results have helped to identify the upper temperature reliable operational limit of this particular metallization scheme to be 605 C.

  17. Micro-discharge noise and radiation damage of silicon microstrip sensors

    International Nuclear Information System (INIS)

    Ohsugi, T.; Iwata, Y.; Ohyama, H.; Ohmoto, T.; Yoshikawa, M.; Handa, T.; Kurino, K.; Fujita, K.; Kitabayashi, H.; Tamura, N.; Hatakenaka, T.; Maeohmichi, M.; Takahata, M.; Nakao, M.; Iwasaki, H.; Kohriki, T.; Terada, S.; Unno, Y.; Takashima, R.; Yamamoto, K.; Yamamura, K.

    1996-01-01

    We have examined experimentally some existing ideas for improving the radiation hardness of silicon microstrip sensors. We confirm that the extended electrode and the deep implant-strip proposed on the basis of simulation studies works effectively to suppress micro-discharge as well as junction breakdown of the bias or guard ring. For an integrated coupling capacitor a double layer structure of SiO 2 and Si 3 N 4 provides better radiation hardness than that of single SiO 2 coupling in our design conditions. The onset voltage of the micro-discharge on the bias/guard ring has been studied for an extended electrode and a floating guard ring. (orig.)

  18. Si K EDGE STRUCTURE AND VARIABILITY IN GALACTIC X-RAY BINARIES

    Energy Technology Data Exchange (ETDEWEB)

    Schulz, Norbert S.; Corrales, Lia; Canizares, Claude R. [Kavli Institute for Astrophysics and Space Research, Massachusetts Institute of Technology, Cambridge, MA 02139 (United States)

    2016-08-10

    We survey the Si K edge structure in various absorbed Galactic low-mass X-ray binaries (LMXBs) to study states of silicon in the inter- and circum-stellar medium. The bulk of these LMXBs lie toward the Galactic bulge region and all have column densities above 10{sup 22} cm{sup −2}. The observations were performed using the Chandra High Energy Transmission Grating Spectrometer. The Si K edge in all sources appears at an energy value of 1844 ± 0.001 eV. The edge exhibits significant substructure that can be described by a near edge absorption feature at 1849 ± 0.002 eV and a far edge absorption feature at 1865 ± 0.002 eV. Both of these absorption features appear variable with equivalent widths up to several mÅ. We can describe the edge structure using several components: multiple edge functions, near edge absorption excesses from silicates in dust form, signatures from X-ray scattering optical depths, and a variable warm absorber from ionized atomic silicon. The measured optical depths of the edges indicate much higher values than expected from atomic silicon cross sections and interstellar medium abundances, and they appear consistent with predictions from silicate X-ray absorption and scattering. A comparison with models also indicates a preference for larger dust grain sizes. In many cases, we identify Si xiii resonance absorption and determine ionization parameters between log ξ = 1.8 and 2.8 and turbulent velocities between 300 and 1000 km s{sup −1}. This places the warm absorber in close vicinity of the X-ray binaries. In some data, we observe a weak edge at 1.840 keV, potentially from a lesser contribution of neutral atomic silicon.

  19. Non-linear effects in transition edge sensors for X-ray detection

    International Nuclear Information System (INIS)

    Bandler, S.R.; Figueroa-Feliciano, E.; Iyomoto, N.; Kelley, R.L.; Kilbourne, C.A.; Murphy, K.D.; Porter, F.S.; Saab, T.; Sadleir, J.

    2006-01-01

    In a microcalorimeter that uses a transition-edge sensor to detect energy depositions, the small signal energy resolution improves with decreasing heat capacity. This improvement remains true up to the point where non-linear and saturation effects become significant. This happens when the energy deposition causes a significant change in the sensor resistance. Not only does the signal size become a non-linear function of the energy deposited, but also the noise becomes non-stationary over the duration of the pulse. Algorithms have been developed that can calculate the optimal performance given this non-linear behavior that typically requires significant processing and calibration work-both of which are impractical for space missions. We have investigated the relative importance of the various non-linear effects, with the hope that a computationally simple transformation can overcome the largest of the non-linear and non-stationary effects, producing a highly linear 'gain' for pulse-height versus energy, and close to the best energy resolution at all energies when using a Wiener filter

  20. Development of a TSC-Setup for the Characterization of Electron and Hole Traps in Irradiated Silicon Sensors

    CERN Document Server

    Stricker, Miriam

    2015-01-01

    For the characterization of radiation damage in silicon detectors a low-noise TSC-Setup was built to analyze charge trapping in the temperature range between 15 K and 250 K. The setup offers the possibility to perform Thermally Stimulated Current (TSC) and IV measurements and also to anneal samples at temperatures up to 180 ◦C. A first annealing study on a proton irradiated silicon pad sensor was performed. This study focuses mainly on the variation of the trap concentration and the results are compared to literature.

  1. An analytical model for pulse shape and electrothermal stability in two-body transition-edge sensor microcalorimeters

    International Nuclear Information System (INIS)

    Bennett, D. A.; Horansky, R. D.; Schmidt, D. R.; Swetz, D. S.; Vale, L. R.; Ullom, J. N.; Hoover, A. S.; Hoteling, N. J.; Rabin, M. W.

    2010-01-01

    High-resolution superconducting gamma-ray sensors show potential for the more accurate analysis of nuclear material. These devices are part of a larger class of microcalorimeters and bolometers based on transition edge sensors (TESs) that have two distinct thermal bodies. We derive the time domain behavior of the current and temperature for compound TES devices in the small signal limit and demonstrate the utility of these equations for device design and characterization. In particular, we use the model to fit pulses from our gamma-ray microcalorimeters and demonstrate how critical damping and electrothermal stability can be predicted.

  2. High-resolution gamma-ray spectroscopy with a microwave-multiplexed transition-edge sensor array

    Energy Technology Data Exchange (ETDEWEB)

    Noroozian, Omid [National Institute of Standards and Technology, Boulder, Colorado 80305 (United States); Center for Astrophysics and Space Astronomy, University of Colorado, Boulder, Colorado 80309 (United States); Mates, John A. B.; Bennett, Douglas A.; Brevik, Justus A.; Fowler, Joseph W.; Gao, Jiansong; Hilton, Gene C.; Horansky, Robert D.; Irwin, Kent D.; Schmidt, Daniel R.; Vale, Leila R.; Ullom, Joel N. [National Institute of Standards and Technology, Boulder, Colorado 80305 (United States); Kang, Zhao [Department of Physics, University of Colorado, Boulder, Colorado 80309 (United States)

    2013-11-11

    We demonstrate very high resolution photon spectroscopy with a microwave-multiplexed two-pixel transition-edge sensor (TES) array. We measured a {sup 153}Gd photon source and achieved an energy resolution of 63 eV full-width-at-half-maximum at 97 keV and an equivalent readout system noise of 86 pA/√(Hz) at the TES. The readout circuit consists of superconducting microwave resonators coupled to radio-frequency superconducting-quantum-interference-devices and transduces changes in input current to changes in phase of a microwave signal. We use flux-ramp modulation to linearize the response and evade low-frequency noise. This demonstration establishes one path for the readout of cryogenic X-ray and gamma-ray sensor arrays with more than 10{sup 3} elements and spectral resolving powers R=λ/Δλ>10{sup 3}.

  3. A highly sensitive and durable electrical sensor for liquid ethanol using thermally-oxidized mesoporous silicon

    Science.gov (United States)

    Harraz, Farid A.; Ismail, Adel A.; Al-Sayari, S. A.; Al-Hajry, A.; Al-Assiri, M. S.

    2016-12-01

    A capacitive detection of liquid ethanol using reactive, thermally oxidized films constructed from electrochemically synthesized porous silicon (PSi) is demonstrated. The sensor elements are fabricated as meso-PSi (pore sizes hydrophobic PSi surface exhibited almost a half sensitivity of the thermal oxide sensor. The response to water is achieved only at the oxidized surface and found to be ∼one quarter of the ethanol sensitivity, dependent on parameters such as vapor pressure and surface tension. The capacitance response retains ∼92% of its initial value after continuous nine cyclic runs and the sensors presumably keep long-term stability after three weeks storage, demonstrating excellent durability and storage stability. The observed behavior in current system is likely explained by the interface interaction due to dipole moment effect. The results suggest that the current sensor structure and design can be easily made to produce notably higher sensitivities for reversible detection of various analytes.

  4. Simulation and characterization of silicon nanopillar-based nanoparticle sensors

    Science.gov (United States)

    Wasisto, Hutomo Suryo; Merzsch, Stephan; Huang, Kai; Stranz, Andrej; Waag, Andreas; Peiner, Erwin

    2013-05-01

    Nanopillar-based structures hold promise as highly sensitive resonant mass sensors for a new generation of aerosol nanoparticle (NP) detecting devices because of their very small masses. In this work, the possible use of a silicon nanopillar (SiNPL) array as a nanoparticle sensor is investigated. The sensor structures are created and simulated using a finite element modeling (FEM) tool of COMSOL Multiphysics 4.3 to study the resonant characteristics and the sensitivity of the SiNPL for femtogram NP mass detection. Instead of using 2D plate models or simple single 3D cylindrical pillar models, FEM is performed with SiNPLs in 3D structures based on the real geometry of experimental SiNPL arrays employing a piezoelectric stack for resonant excitation. In order to achieve an optimal structure and investigate the etching effect on the fabricated resonators, SiNPLs with different designs of meshes, sidewall profiles, lengths, and diameters are simulated and analyzed. To validate the FEM results, fabricated SiNPLs with a high aspect ratio of ~60 are employed and characterized in resonant frequency measurements. SiNPLs are mounted onto a piezoactuator inside a scanning electron microscope (SEM) chamber which can excite SiNPLs into lateral vibration. The measured resonant frequencies of the SiNPLs with diameters about 650 nm and heights about 40 μm range from 434.63 kHz to 458.21 kHz, which agree well with those simulated by FEM. Furthermore, the deflection of a SiNPL can be enhanced by increasing the applied piezoactuator voltage. By depositing different NPs (i.e., carbon, TiO2, SiO2, Ag, and Au NPs) on the SiNPLs, the decrease of the resonant frequency is clearly shown confirming their potential to be used as airborne NP mass sensor with femtogram resolution level.

  5. Silicon sensor prototypes for the Phase II upgrade of the CMS tracker

    Energy Technology Data Exchange (ETDEWEB)

    Bergauer, Thomas, E-mail: thomas.bergauer@oeaw.ac.at

    2016-09-21

    The High-Luminosity LHC (HL-LHC) has been identified as the highest priority program in High Energy Physics in the mid-term future. It will provide the experiments an additional integrated luminosity of about 2500 fb{sup −1} over 10 years of operation, starting in 2025. In order to meet the experimental challenges of unprecedented p–p luminosity, especially in terms of radiation levels and occupancy, the CMS collaboration will need to replace its entire strip tracker by a new one. In this paper the baseline layout option for this new Phase-II tracker is shown, together with two variants using a tilted barrel geometry or larger modules from 8-inch silicon wafers. Moreover, the two module concepts are discussed, which consist either of two strip sensors (2S) or of one strip and one pixel sensor (PS). These two designs allow p{sub T} discrimination at module level enabling the tracker to contribute to the L1 trigger decision. The paper presents testing results of the macro-pixel-light sensor for the PS module and shows the first electrical characterization of unirradiated, full-scale strip sensor prototypes for the 2S module concept, both on 6- and 8-inch wafers.

  6. Optimizing the quality of silicon strip sensors produced by Infineon Technologies Austria AG

    International Nuclear Information System (INIS)

    Treberspurg, W; Bergauer, T; Dragicevic, M; König, A; Bartl, U; Hacker, J; Wübben, T

    2014-01-01

    The tracking systems of most modern particle physics experiments are realized by silicon based sensors. The size of such systems has continuously increased and nowadays a sensitive area of several 100 m 2 has to be covered. This large amount of sensors might exceed the production capabilities of existing companies and institutes. Therefore the Institute of High Energy Physics of the Austrian Academy of Sciences (HEPHY) and the European semiconductor manufacturer Infineon Technologies Austria AG developed together a production process for p-on-n strip sensors. Although the first prototype run has shown a promising quality, it has been observed that weak strips exist, which are mainly located at distinctive areas on each wafer. At these areas the affected parameters are correlated to each other. A similar behaviour could be reproduced with a smaller second batch, whose sensors have been used for further analysis and advanced measurements. This paper sums up the characteristic behaviour of the specific effect and presents different possibilities how to cure the sensors. The systematic accumulation of weak strips can be traced back to a specific operation during the fabrication process. All data strongly indicate that the effect is caused by local charging effects on an isolating layer

  7. High-resolution photon spectroscopy with a microwave-multiplexed 4-pixel transition edge sensor array

    Science.gov (United States)

    Guss, Paul; Rabin, Michael; Croce, Mark; Hoteling, Nathan; Schwellenbach, David; Kruschwitz, Craig; Mocko, Veronika; Mukhopadhyay, Sanjoy

    2017-09-01

    We demonstrate very high-resolution photon spectroscopy with a microwave-multiplexed 4-pixel transition edge sensor (TES) array. The readout circuit consists of superconducting microwave resonators coupled to radio frequency superconducting-quantum-interference devices (RF-SQUIDs) and transduces changes in input current to changes in phase of a microwave signal. We used a flux-ramp modulation to linearize the response and avoid low-frequency noise. The result is a very high-resolution photon spectroscopy with a microwave-multiplexed 4-pixel transition edge sensor array. We performed and validated a small-scale demonstration and test of all the components of our concept system, which encompassed microcalorimetry, microwave multiplexing, RF-SQUIDs, and software-defined radio (SDR). We shall display data we acquired in the first simultaneous combination of all key innovations in a 4-pixel demonstration, including microcalorimetry, microwave multiplexing, RF-SQUIDs, and SDR. We present the energy spectrum of a gadolinium-153 (153Gd) source we measured using our 4-pixel TES array and the RF-SQUID multiplexer. For each pixel, one can observe the two 97.4 and 103.2 keV photopeaks. We measured the 153Gd photon source with an achieved energy resolution of 70 eV, full width half maximum (FWHM) at 100 keV, and an equivalent readout system noise of 90 pA/pHz at the TES. This demonstration establishes a path for the readout of cryogenic x-ray and gamma ray sensor arrays with more elements and spectral resolving powers. We believe this project has improved capabilities and substantively advanced the science useful for missions such as nuclear forensics, emergency response, and treaty verification through the explored TES developments.

  8. Ductile cutting of silicon microstructures with surface inclination measurement and compensation by using a force sensor integrated single point diamond tool

    International Nuclear Information System (INIS)

    Chen, Yuan-Liu; Cai, Yindi; Shimizu, Yuki; Ito, So; Gao, Wei; Ju, Bing-Feng

    2016-01-01

    This paper presents a measurement and compensation method of surface inclination for ductile cutting of silicon microstructures by using a diamond tool with a force sensor based on a four-axis ultra-precision lathe. The X- and Y-directional inclinations of a single crystal silicon workpiece with respect to the X- and Y-motion axes of the lathe slides were measured respectively by employing the diamond tool as a touch-trigger probe, in which the tool-workpiece contact is sensitively detected by monitoring the force sensor output. Based on the measurement results, fabrication of silicon microstructures can be thus carried out directly along the tilted silicon workpiece by compensating the cutting motion axis to be parallel to the silicon surface without time-consuming pre-adjustment of the surface inclination or turning of a flat surface. A diamond tool with a negative rake angle was used in the experiment for superior ductile cutting performance. The measurement precision by using the diamond tool as a touch-trigger probe was investigated. Experiments of surface inclination measurement and ultra-precision ductile cutting of a micro-pillar array and a micro-pyramid array with inclination compensation were carried out respectively to demonstrate the feasibility of the proposed method. (paper)

  9. Electron-beam induced amorphization of stishovite: Silicon-coordination change observed using Si K-edge extended electron energy-loss fine structure

    International Nuclear Information System (INIS)

    Aken, P.A. van; Sharp, T.G.; Seifert, F.

    1998-01-01

    The analysis of the extended energy-loss fine structure (EXELFS) of the Si K-edge for sixfold-coordinated Si in synthetic stishovite and fourfold-coordinated Si in natural α-quartz is reported by using electron energy-loss spectroscopy (EELS) in combination with transmission electron microscopy (TEM). The stishovite Si K-edge EXELFS spectra were measured as a time-dependent series to document irradiation-induced amorphization. The amorphization was also investigated through the change in Si K- and O K-edge energy-loss near edge structure (ELNES). For α-quartz, in contrast to stishovite, electron irradiation-induced vitrification, produced no detectable changes of the EXELFS. The Si K-edge EXELFS were analysed with the classical extended X-ray absorption fine structure (EXAFS) treatment and compared to ab initio curve-waved multiple-scattering (MS) calculations of EXAFS spectra for stishovite and α-quartz. Highly accurate information on the local atomic environment of the silicon atoms during the irradiation-induced amorphization of stishovite is obtained from the EXELFS structure parameters The mean Si-O bond distance R and mean Si coordination number N changes from R=0.1775 nm and N=6 for stishovite through a disordered intermediate state (R∼0.172 nm and N∼5) to R∼0.167 nm and N∼4.5 for a nearly amorphous state similar to α-quartz (R=0.1609 nm and N=4). During the amorphization process, the Debye-Waller factor (DWF) passes through a maximum value of σ N 2 ∼83.8pm 2 as it changes from σ st 2 =51.8pm 2 for sixfold to σ qu 2 =18.4pm 2 for fourfold coordination of Si. This increase in Debye-Waller factor indicates an increase in mean-square relative displacement (MSRD) between the central silicon atom and its oxygen neighbours. Using the EXELFS data for amorphization, a new method is developed to derive the relative amounts of Si coordinations in high-pressure minerals with mixed coordination. For the radiation-induced amorphization process of

  10. Silicon web process development

    Science.gov (United States)

    Duncan, C. S.; Seidensticker, R. G.; Mchugh, J. P.; Skutch, M. E.; Driggers, J. M.; Hopkins, R. H.

    1981-01-01

    The silicon web process takes advantage of natural crystallographic stabilizing forces to grow long, thin single crystal ribbons directly from liquid silicon. The ribbon, or web, is formed by the solidification of a liquid film supported by surface tension between two silicon filaments, called dendrites, which border the edges of the growing strip. The ribbon can be propagated indefinitely by replenishing the liquid silicon as it is transformed to crystal. The dendritic web process has several advantages for achieving low cost, high efficiency solar cells. These advantages are discussed.

  11. A progress report on the LDRD project entitled {open_quotes}Microelectronic silicon-based chemical sensors: Ultradetection of high value molecules{close_quotes}

    Energy Technology Data Exchange (ETDEWEB)

    Hughes, R.C.

    1996-09-01

    This work addresses a new kind of silicon based chemical sensor that combines the reliability and stability of silicon microelectronic field effect devices with the highly selective and sensitive immunoassay. The sensor works on the principle that thin SiN layers on lightly doped Si can detect pH changes rapidly and reversibly. The pH changes affect the surface potential, and that can be quickly determined by pulsed photovoltage measurements. To detect other species, chemically sensitive films were deposited on the SiN where the presence of the chosen analyte results in pH changes through chemical reactions. A invention of a cell sorting device based on these principles is also described. A new method of immobilizing enzymes using Sandia`s sol-gel glasses is documented and biosensors based on the silicon wafer and an amperometric technique are detailed.

  12. Silicon-Nitride-based Integrated Optofluidic Biochemical Sensors using a Coupled-Resonator Optical Waveguide

    Directory of Open Access Journals (Sweden)

    Jiawei eWANG

    2015-04-01

    Full Text Available Silicon nitride (SiN is a promising material platform for integrating photonic components and microfluidic channels on a chip for label-free, optical biochemical sensing applications in the visible to near-infrared wavelengths. The chip-scale SiN-based optofluidic sensors can be compact due to a relatively high refractive index contrast between SiN and the fluidic medium, and low-cost due to the complementary metal-oxide-semiconductor (CMOS-compatible fabrication process. Here, we demonstrate SiN-based integrated optofluidic biochemical sensors using a coupled-resonator optical waveguide (CROW in the visible wavelengths. The working principle is based on imaging in the far field the out-of-plane elastic-light-scattering patterns of the CROW sensor at a fixed probe wavelength. We correlate the imaged pattern with reference patterns at the CROW eigenstates. Our sensing algorithm maps the correlation coefficients of the imaged pattern with a library of calibrated correlation coefficients to extract a minute change in the cladding refractive index. Given a calibrated CROW, our sensing mechanism in the spatial domain only requires a fixed-wavelength laser in the visible wavelengths as a light source, with the probe wavelength located within the CROW transmission band, and a silicon digital charge-coupled device (CCD / CMOS camera for recording the light scattering patterns. This is in sharp contrast with the conventional optical microcavity-based sensing methods that impose a strict requirement of spectral alignment with a high-quality cavity resonance using a wavelength-tunable laser. Our experimental results using a SiN CROW sensor with eight coupled microrings in the 680nm wavelength reveal a cladding refractive index change of ~1.3 × 10^-4 refractive index unit (RIU, with an average sensitivity of ~281 ± 271 RIU-1 and a noise-equivalent detection limit (NEDL of 1.8 ×10^-8 RIU ~ 1.0 ×10^-4 RIU across the CROW bandwidth of ~1 nm.

  13. Hopping absorption edge in silicon inversion layers

    International Nuclear Information System (INIS)

    Kostadinov, I.Z.

    1983-09-01

    The low frequency gap observed in the absorption spectrum of silicon inversion layers is related to the AC variable range hopping. The frequency dependence of the absorption coefficient is calculated. (author)

  14. Optical response of Al/Ti bilayer transition edge sensors

    International Nuclear Information System (INIS)

    Zhang Qing-Ya; Liu Jian-She; Dong Wen-Hui; He Gen-Fang; Li Tie-Fu; Chen Wei; Wang Tian-Shun; Zhou Xing-Xiang

    2014-01-01

    We report the optical response characteristics of Al/Ti bilayer transition edge sensors (TESs), which are mainly comprised of Al/Ti bilayer thermometers and suspended SiN membranes for thermal isolation. The measurement was performed in a 3 He sorption refrigerator and the device's response to optical pulses was investigated using a pulsed laser source. Based on these measurements, we obtained the effective recovery time (τ eff ) of the devices at different biases and discussed the dependence of τ eff on the bias. The device with a 940 μm × 940 μm continuous suspended SiN membrane demonstrated a fast response speed with τ eff = 3.9 μs, which indicates a high temperature sensitivity (α = T/R · dR/dT = 326). The results also showed that the TES exhibits good linearity under optical pulses of variable widths. (interdisciplinary physics and related areas of science and technology)

  15. Qualification of a new supplier for silicon particle detectors

    Energy Technology Data Exchange (ETDEWEB)

    Dragicevic, M., E-mail: marko.dragicevic@cern.ch [Institute of High Energy Physics, Austrian Academy of Sciences, Vienna (Austria); Bartl, U. [Infineon Technologies Austria AG, Villach (Austria); Bergauer, T.; Frühwirth, E. [Institute of High Energy Physics, Austrian Academy of Sciences, Vienna (Austria); Gamerith, S.; Hacker, J.; Kröner, F.; Kucher, E.; Moser, J.; Neidhart, T. [Infineon Technologies Austria AG, Villach (Austria); Schulze, H.-J. [Infineon Technologies AG, Munich (Germany); Schustereder, W. [Infineon Technologies Austria AG, Villach (Austria); Treberspurg, W. [Institute of High Energy Physics, Austrian Academy of Sciences, Vienna (Austria); Wübben, T. [Infineon Technologies Austria AG, Villach (Austria)

    2013-12-21

    Most modern particle physics experiments use silicon based sensors for their tracking systems. These sensors are able to detect particles generated in high energy collisions with high spatial resolution and therefore allow the precise reconstruction of particle tracks. So far only a few vendors are capable of producing silicon strip sensors with the quality needed in particle physics experiments. Together with the European semiconductor manufacturer Infineon Technologies Austria AG the Institute of High Energy Physics of the Austrian Academy of Sciences developed planar silicon strip sensors in p-on-n technology. This paper presents the development, production and results from the electrical characterisation of the first sensors produced by Infineon.

  16. The status of silicon ribbon growth technology for high-efficiency silicon solar cells

    Science.gov (United States)

    Ciszek, T. F.

    1985-01-01

    More than a dozen methods have been applied to the growth of silicon ribbons, beginning as early as 1963. The ribbon geometry has been particularly intriguing for photovoltaic applications, because it might provide large area, damage free, nearly continuous substrates without the material loss or cost of ingot wafering. In general, the efficiency of silicon ribbon solar cells has been lower than that of ingot cells. The status of some ribbon growth techniques that have achieved laboratory efficiencies greater than 13.5% are reviewed, i.e., edge-defined, film-fed growth (EFG), edge-supported pulling (ESP), ribbon against a drop (RAD), and dendritic web growth (web).

  17. Potential of silicon nanowires structures as nanoscale piezoresistors in mechanical sensors

    International Nuclear Information System (INIS)

    Messina, M; Njuguna, J

    2012-01-01

    This paper presents the design of a single square millimeter 3-axial accelerometer for bio-mechanics measurements that exploit the potential of silicon nanowires structures as nanoscale piezoresistors. The main requirements of this application are miniaturization and high measurement accuracy. Nanowires as nanoscale piezoresistive devices have been chosen as sensing element, due to their high sensitivity and miniaturization achievable. By exploiting the electro-mechanical features of nanowires as nanoscale piezoresistors, the nominal sensor sensitivity is overall boosted by more than 30 times. This approach allows significant higher accuracy and resolution with smaller sensing element in comparison with conventional devices without the need of signal amplification.

  18. Development of active edge pixel sensors and four-side buttable modules using vertical integration technologies

    CERN Document Server

    INSPIRE-00219560; Moser, H.-G.; Nisius, R.; Richter, R.H.; Terzo, S.; Weigell, P.

    2014-01-01

    We present an R&D activity focused on the development of novel modules for the upgrade of the ATLAS pixel system at the High Luminosity LHC (HL-LHC). The modules consist of n-in-p pixel sensors, 100 or 200 $\\mu$m thick, produced at VTT (Finland) with an active edge technology, which considerably reduces the dead area at the periphery of the device. The sensors are interconnected with solder bump-bonding to the ATLAS FE-I3 and FE-I4 read-out chips, and characterized with radioactive sources and beam tests at the CERN-SPS and DESY. The results of these measurements will be discussed for devices before and after irradiation up to a fluence of $5\\times 10^{15}$ \

  19. Sub-parts per million NO2 chemi-transistor sensors based on composite porous silicon/gold nanostructures prepared by metal-assisted etching.

    Science.gov (United States)

    Sainato, Michela; Strambini, Lucanos Marsilio; Rella, Simona; Mazzotta, Elisabetta; Barillaro, Giuseppe

    2015-04-08

    Surface doping of nano/mesostructured materials with metal nanoparticles to promote and optimize chemi-transistor sensing performance represents the most advanced research trend in the field of solid-state chemical sensing. In spite of the promising results emerging from metal-doping of a number of nanostructured semiconductors, its applicability to silicon-based chemi-transistor sensors has been hindered so far by the difficulties in integrating the composite metal-silicon nanostructures using the complementary metal-oxide-semiconductor (CMOS) technology. Here we propose a facile and effective top-down method for the high-yield fabrication of chemi-transistor sensors making use of composite porous silicon/gold nanostructures (cSiAuNs) acting as sensing gate. In particular, we investigate the integration of cSiAuNs synthesized by metal-assisted etching (MAE), using gold nanoparticles (NPs) as catalyst, in solid-state junction-field-effect transistors (JFETs), aimed at the detection of NO2 down to 100 parts per billion (ppb). The chemi-transistor sensors, namely cSiAuJFETs, are CMOS compatible, operate at room temperature, and are reliable, sensitive, and fully recoverable for the detection of NO2 at concentrations between 100 and 500 ppb, up to 48 h of continuous operation.

  20. Characterization and reduction of noise in Mo/Au transition edge sensors

    International Nuclear Information System (INIS)

    Lindeman, Mark A.; Bandler, Simon; Brekosky, Regis P.; Chervenak, James A.; Figueroa-Feliciano, Enectali; Finkbeiner, Fred M.; Saab, Tarek; Stahle, Caroline K.

    2004-01-01

    We measured noise in a variety of Mo/Au transition-edge sensor (TES) X-ray calorimeters. We investigated the relationship between the noise, bias, and the superconducting phase transition in the TESs. Our square TES calorimeters have achieved very good energy resolutions (2.4 eV at 1.5 keV) but their resolutions have been limited by broadband white excess noise generated by the TES when it is biased in the phase transition. We have recently fabricated Mo/Cu TESs with interdigitated normal metal bars deposited on top of the bilayer. The new TES calorimeters have demonstrated little or no excess noise in the phase transition. These results point the way to development of TES calorimeters with higher energy resolution

  1. A silicon strip detector used as a high rate focal plane sensor for electrons in a magnetic spectrometer

    CERN Document Server

    Miyoshi, T; Fujii, Y; Hashimoto, O; Hungerford, E V; Sato, Y; Sarsour, M; Takahashi, T; Tang, L; Ukai, M; Yamaguchi, H

    2003-01-01

    A silicon strip detector was developed as a focal plane sensor for a 300 MeV electron spectrometer and operated in a high rate environment. The detector with 500 mu m pitch provided good position resolution for electrons crossing the focal plane of the magnetic spectrometer system which was mounted in Hall C of the Thomas Jefferson National Accelerator Facility. The design of the silicon strip detector and the performance under high counting rate (<=2.0x10 sup 8 s sup - sup 1 for approx 1000 SSD channels) and high dose are discussed.

  2. Fast-timing Capabilities of Silicon Sensors for the CMS High-Granularity Calorimeter at the High-Luminosity LHC

    Science.gov (United States)

    Akchurin, Nural; CMS Collaboration

    2017-11-01

    We report on the signal timing capabilities of thin silicon sensors when traversed by multiple simultaneous minimum ionizing particles (MIP). Three different planar sensors, 133, 211, and 285 μm thick in depletion thickness, have been exposed to high energy muons and electrons at CERN. We describe signal shape and timing resolution measurements as well as the response of these devices as a function of the multiplicity of MIPs. We compare these measurements to simulations where possible. We achieve better than 20 ps timing resolution for signals larger than a few tens of MIPs.

  3. X-ray excited optical luminescence (XEOL) and its application to porous silicon

    International Nuclear Information System (INIS)

    Hill, D.A.

    1998-09-01

    X-ray Excited Optical Luminescence (XEOL) is investigated as a local structural probe of the light-emitting sites in porous silicon. A detailed microscopic model of the XEOL process in porous silicon is proposed. A central aspect of the technique is an assessment of the spatial separation between the primary photoionisation event and subsequent optical radiative recombination. By constructing a Monte Carlo simulation of hot electron propagation in silicon using both elastic and inelastic scattering cross-sections, the mean minimum range of luminescence excitation can be calculated. This range is estimated as 546±1A for the silicon K-edge (∼ 1839eV), but is reduced to 8.9±0.1A for the silicon L 2,3 -edge (∼ 99eV). From known porous silicon properties, it is concluded that this mean minimum range is comparable to the actual range of excitation. Hence, more localised structural information may be obtained from L 2,3 -edge XEOL measurements. This important difference between the two spectra has been neglected in previous studies. Simultaneous measurements of the XEOL and total electron yield (TEY) x-ray absorption spectra (XAS) have been conducted at both the silicon K-edge and L 2,3 -edge for various porous silicon samples and related materials. Measurements have been conducted at the Si K-edge on a rapid thermally oxidised (RTO) porous silicon sample. XEOL spectra yield two distinct luminescence bands in the visible region. From multi-bunch wavelength-selective XEOL measurements, it is concluded that there are blue luminescent defective silica sites together with a red luminescent site originating from silicon-like material. The spectral time decay curve under pulsed x-ray excitation gives two distinct decay components; one fast in the range of a few nanoseconds and the other slow in the range of microseconds. Time-resolved XEOL measurements in single-bunch mode show that the fast band mirrors the blue wavelength XEOL whereas the slow band correlates with the

  4. Process for forming a porous silicon member in a crystalline silicon member

    Science.gov (United States)

    Northrup, M. Allen; Yu, Conrad M.; Raley, Norman F.

    1999-01-01

    Fabrication and use of porous silicon structures to increase surface area of heated reaction chambers, electrophoresis devices, and thermopneumatic sensor-actuators, chemical preconcentrates, and filtering or control flow devices. In particular, such high surface area or specific pore size porous silicon structures will be useful in significantly augmenting the adsorption, vaporization, desorption, condensation and flow of liquids and gasses in applications that use such processes on a miniature scale. Examples that will benefit from a high surface area, porous silicon structure include sample preconcentrators that are designed to adsorb and subsequently desorb specific chemical species from a sample background; chemical reaction chambers with enhanced surface reaction rates; and sensor-actuator chamber devices with increased pressure for thermopneumatic actuation of integrated membranes. Examples that benefit from specific pore sized porous silicon are chemical/biological filters and thermally-activated flow devices with active or adjacent surfaces such as electrodes or heaters.

  5. Silicon Sensors for High-Luminosity Trackers - RD50 Collaboration Status Report

    CERN Document Server

    Kuehn, Susanne

    2014-01-01

    The revised schedule for the Large Hadron Collider (LHC) upg rade foresees a significant increase of the luminosity of the LHC by upgrading towards the HL-LHC ( High Luminosity-LHC). The final upgrade is planned for around the year 2023, followed by the HL-LHC running. This is motivated by the need to harvest the maximum physics potenti al from the machine. It is clear that the high integrated luminosity of 3000 fb − 1 will result in very high radiation levels, which manifest a serious challenge for the detectors. This is espe cially true for the tracking detectors installed close to the interaction point. For HL-LHC, all-s ilicon central trackers are being studied in ATLAS, CMS and LHCb, with extremely radiation hard silico n sensors to be employed in the innermost layers. Within the RD50 Collaboration, a massive R&D; program is underway, with an open cooperation across experimental boundaries to deve lop silicon sensors with sufficient radiation tolerance. This report presents several researc h topics...

  6. A high performance micro-pressure sensor based on a double-ended quartz tuning fork and silicon diaphragm in atmospheric packaging

    International Nuclear Information System (INIS)

    Cheng, Rongjun; Li, Cun; Zhao, Yulong; Li, Bo; Tian, Bian

    2015-01-01

    A resonant micro-pressure sensor based on a double-ended quartz tuning fork (DEQTF) and bossed silicon diaphragm in atmospheric packaging is presented. To achieve vacuum-free packaging with a high quality factor, the DEQTF is designed to resonate in an anti-phase vibration mode in a plane that is under the effect of slide-film damping. The feasibility is demonstrated by theoretical analysis and a finite element simulation. The dimensions of the DEQTF and diaphragm are optimized in accordance with the principles of improving sensitivity and minimizing energy dissipation. The sensor chip is fabricated using quartz and silicon micromachining technologies, and simply packaged in a stainless steel shell with standard atmosphere. The experimental setup is established for the calibration, where an additional sensor prototype without a pressure port is introduced as a frequency reference. By detecting the frequency difference of the tested sensor and reference sensor, the influences of environmental factors such as temperature and shocks on measuring accuracy are eliminated effectively. Under the action of a self-excitation circuit, static performance is obtained. The sensitivity of the sensor is 299 kHz kPa −1 in the operating range of 0–10 kPa at room temperature. Testing results shows a nonlinearity of 0.0278%FS, a hysteresis of 0.0207%FS and a repeatability of 0.0375%FS. The results indicate that the proposed sensor has favorable features, which provides a cost-effective and high-performance approach for low pressure measurement. (paper)

  7. Photoactivated Mixed In-Plane and Edge-Enriched p-Type MoS2 Flake-Based NO2 Sensor Working at Room Temperature.

    Science.gov (United States)

    Agrawal, Abhay V; Kumar, Rahul; Venkatesan, Swaminathan; Zakhidov, Alex; Yang, Guang; Bao, Jiming; Kumar, Mahesh; Kumar, Mukesh

    2018-05-25

    Toxic gases are produced during the burning of fossil fuels. Room temperature (RT) fast detection of toxic gases is still challenging. Recently, MoS 2 transition metal dichalcogenides have sparked great attention in the research community due to their performance in gas sensing applications. However, MoS 2 based gas sensors still suffer from long response and recovery times, especially at RT. Considering this challenge, here, we report photoactivated highly reversible and fast detection of NO 2 sensors at room temperature (RT) by using mixed in-plane and edge-enriched p-MoS 2 flakes (mixed MoS 2 ). The sensor showed fast response with good sensitivity of ∼10.36% for 10 ppm of NO 2 at RT without complete recovery. However, complete recovery was obtained with better sensor performance under UV light illumination at RT. The UV assisted NO 2 sensing showed improved performance in terms of fast response and recovery kinetics with enhanced sensitivity to 10 ppm NO 2 concentration. The sensor performance is also investigated under thermal energy, and a better sensor performance with reduced sensitivity and high selectivity toward NO 2 was observed. A detailed gas sensing mechanism based on the density functional theory (DFT) calculations for favorable NO 2 adsorption sites on in-plane and edge-enriched MoS 2 flakes is proposed. This study revealed the role of favorable adsorption sites in MoS 2 flakes for the enhanced interaction of target gases and developed a highly sensitive, reversible, and fast gas sensor for next-generation toxic gases at room temperature.

  8. Development of AC-coupled, poly-silicon biased, p-on-n silicon strip detectors in India for HEP experiments

    Science.gov (United States)

    Jain, Geetika; Dalal, Ranjeet; Bhardwaj, Ashutosh; Ranjan, Kirti; Dierlamm, Alexander; Hartmann, Frank; Eber, Robert; Demarteau, Marcel

    2018-02-01

    P-on-n silicon strip sensors having multiple guard-ring structures have been developed for High Energy Physics applications. The study constitutes the optimization of the sensor design, and fabrication of AC-coupled, poly-silicon biased sensors of strip width of 30 μm and strip pitch of 55 μm. The silicon wafers used for the fabrication are of 4 inch n-type, having an average resistivity of 2-5 k Ω cm, with a thickness of 300 μm. The electrical characterization of these detectors comprises of: (a) global measurements of total leakage current, and backplane capacitance; (b) strip and voltage scans of strip leakage current, poly-silicon resistance, interstrip capacitance, interstrip resistance, coupling capacitance, and dielectric current; and (c) charge collection measurements using ALiBaVa setup. The results of the same are reported here.

  9. Combined effect of bulk and surface damage on strip insulation properties of proton irradiated n$^{+}$-p silicon strip sensors

    CERN Document Server

    Dalal, R; Ranjan, K; Moll, M; Elliott-Peisert, A

    2014-01-01

    Silicon sensors in next generation hadron colliders willface a tremendously harsh radiation environment. Requirement tostudy rarest reaction channels with statistical constraints hasresulted in a huge increment in radiation flux, resulting in bothsurface damage and bulk damage. For sensors which are used in acharged hadron environment, both of these degrading processes takeplace simultaneously. Recently it has been observed in protonirradiated n$^{+}$-p Si strip sensors that n$^{+}$ strips had a goodinter-strip insulation with low values of p-spray and p-stop dopingdensities which is contrary to the expected behaviour from thecurrent understanding of radiation damage. In this work a simulationmodel has been devised incorporating radiation damage to understandand provide a possible explanation to the observed behaviour ofirradiated sensors.

  10. A Smart High Accuracy Silicon Piezoresistive Pressure Sensor Temperature Compensation System

    Directory of Open Access Journals (Sweden)

    Guanwu Zhou

    2014-07-01

    Full Text Available Theoretical analysis in this paper indicates that the accuracy of a silicon piezoresistive pressure sensor is mainly affected by thermal drift, and varies nonlinearly with the temperature. Here, a smart temperature compensation system to reduce its effect on accuracy is proposed. Firstly, an effective conditioning circuit for signal processing and data acquisition is designed. The hardware to implement the system is fabricated. Then, a program is developed on LabVIEW which incorporates an extreme learning machine (ELM as the calibration algorithm for the pressure drift. The implementation of the algorithm was ported to a micro-control unit (MCU after calibration in the computer. Practical pressure measurement experiments are carried out to verify the system’s performance. The temperature compensation is solved in the interval from −40 to 85 °C. The compensated sensor is aimed at providing pressure measurement in oil-gas pipelines. Compared with other algorithms, ELM acquires higher accuracy and is more suitable for batch compensation because of its higher generalization and faster learning speed. The accuracy, linearity, zero temperature coefficient and sensitivity temperature coefficient of the tested sensor are 2.57% FS, 2.49% FS, 8.1 × 10−5/°C and 29.5 × 10−5/°C before compensation, and are improved to 0.13%FS, 0.15%FS, 1.17 × 10−5/°C and 2.1 × 10−5/°C respectively, after compensation. The experimental results demonstrate that the proposed system is valid for the temperature compensation and high accuracy requirement of the sensor.

  11. Investigation of leakage current and breakdown voltage in irradiated double-sided 3D silicon sensors

    International Nuclear Information System (INIS)

    Betta, G.-F. Dalla; Mendicino, R.; Povoli, M.; Sultan, D.M.S.; Ayllon, N.; Hoeferkamp, M.; McDuff, H.; Seidel, S.; Boscardin, M.; Zorzi, N.; Mattiazzo, S.

    2016-01-01

    We report on an experimental study aimed at gaining deeper insight into the leakage current and breakdown voltage of irradiated double-sided 3D silicon sensors from FBK, so as to improve both the design and the fabrication technology for use at future hadron colliders such as the High Luminosity LHC. Several 3D diode samples of different technologies and layout are considered, as well as several irradiations with different particle types. While the leakage current follows the expected linear trend with radiation fluence, the breakdown voltage is found to depend on both the bulk damage and the surface damage, and its values can vary significantly with sensor geometry and process details.

  12. The knife-edge chamber

    International Nuclear Information System (INIS)

    Barasch, E.F.; Bowcock, T.J.V.; Drew, M.M.; Elliott, S.M.; Lee, B.; McIntyre, P.M.; Pang, Y.; Popovic, M.; Smith, D.D.

    1990-01-01

    In this paper the design for a new technology for particle track detectors is described. Using standard IC fabrication techniques, a pattern of microscopic knife edges and field-shaping electrodes can be fabricated on a silicon substrate. The knife-edge chamber uniquely offers attractive performance for the track chambers required for SSC detectors, for which no present technology is yet satisfactory. Its features include: excellent radiation hardness (10 Mrad), excellent spatial resolution (∼20 μm), short drift time (20 ns), and large pulse height (1 mV)

  13. Measurements on irradiated L1 sensor prototypes for the D0 Run IIb silicon detector project

    International Nuclear Information System (INIS)

    Ahsan, M.; Bolton, T.; Carnes, K.; Demarteau, M.; Demina, R.; Gray, T.; Korjenevski, S.; Lehner, F.; Lipton, R.; Mao, H.S.; McCarthy, R.

    2010-01-01

    We report on irradiation studies of Hamamatsu prototype silicon microstrip detectors for layer 1 of the D0 upgrade project for Run IIb. The irradiation was carried out with 10 MeV protons up to proton fluence of 10 14 p/cm 2 at the J.R. Macdonald Laboratory, Manhatten, KS. The flux calibration was carefully checked using different dose normalization techniques. The results based on the obtained sensor leakage currents after irradiation show that the NIEL scaling hypothesis for low energy protons has to be applied with great care. We observe 30-40% less radiation damage in silicon for 10 MeV proton exposure than is expected from the predicted NIEL scaling.

  14. Measurements on irradiated L1 sensor prototypes for the D0 Run IIb silicon detector project

    Energy Technology Data Exchange (ETDEWEB)

    Ahsan, M.; Bolton, T.; Carnes, K.; /Kansas State U.; Demarteau, M.; /Fermilab; Demina, R.; /Rochester U.; Gray, T.; /Kansas State U.; Korjenevski, S.; /Rochester U.; Lehner, F.; /Zurich U.; Lipton, R.; Mao, H.S.; /Fermilab; McCarthy, R.; /SUNY, Stony Brook /Kansas State U. /Fermilab

    2010-01-01

    We report on irradiation studies of Hamamatsu prototype silicon microstrip detectors for layer 1 of the D0 upgrade project for Run IIb. The irradiation was carried out with 10 MeV protons up to proton fluence of 10{sup 14} p/cm{sup 2} at the J.R. Macdonald Laboratory, Manhatten, KS. The flux calibration was carefully checked using different dose normalization techniques. The results based on the obtained sensor leakage currents after irradiation show that the NIEL scaling hypothesis for low energy protons has to be applied with great care. We observe 30-40% less radiation damage in silicon for 10 MeV proton exposure than is expected from the predicted NIEL scaling.

  15. A Temperature Sensor using a Silicon-on-Insulator (SOI) Timer for Very Wide Temperature Measurement

    Science.gov (United States)

    Patterson, Richard L.; Hammoud, Ahmad; Elbuluk, Malik; Culley, Dennis E.

    2008-01-01

    A temperature sensor based on a commercial-off-the-shelf (COTS) Silicon-on-Insulator (SOI) Timer was designed for extreme temperature applications. The sensor can operate under a wide temperature range from hot jet engine compartments to cryogenic space exploration missions. For example, in Jet Engine Distributed Control Architecture, the sensor must be able to operate at temperatures exceeding 150 C. For space missions, extremely low cryogenic temperatures need to be measured. The output of the sensor, which consisted of a stream of digitized pulses whose period was proportional to the sensed temperature, can be interfaced with a controller or a computer. The data acquisition system would then give a direct readout of the temperature through the use of a look-up table, a built-in algorithm, or a mathematical model. Because of the wide range of temperature measurement and because the sensor is made of carefully selected COTS parts, this work is directly applicable to the NASA Fundamental Aeronautics/Subsonic Fixed Wing Program--Jet Engine Distributed Engine Control Task and to the NASA Electronic Parts and Packaging (NEPP) Program. In the past, a temperature sensor was designed and built using an SOI operational amplifier, and a report was issued. This work used an SOI 555 timer as its core and is completely new work.

  16. Fabrication of Ultrasensitive Transition Edge Sensor Bolometric Detectors for HIRMES

    Science.gov (United States)

    Brown, Ari-David; Brekosky, Regis; Franz, David; Hsieh, Wen-Ting; Kutyrev, Alexander; Mikula, Vilem; Miller, Timothy; Moseley, S. Harvey; Oxborrow, Joseph; Rostem, Karwan; hide

    2017-01-01

    The high resolution mid-infrared spectrometer (HIRMES) is a high resolving power (R approx. 100,000) instrument operating in the 25-122 micron spectral range and will fly on board the Stratospheric Observatory for Far-Infrared Astronomy (SOFIA) in 2019. Central ot HIRMES are its two transition edge sensor (TES) bolometric cameras, an 8x16 detector high resolution array and a 64x16 detector low resolution array. Both types of detectors consist of MoAu TES fabricated on leg-isolated Si membranes. Whereas the high resolution detectors, with noise equivalent power (NEP) approx. 2 aW/square root of (Hz), are fabricated on 0.45 micron Si substrates, the low resolution detectors, with NEP approx. 10 aW/square root of (Hz), are fabricated on 1.40 micron Si. Here we discuss the similarities and difference in the fabrication methodologies used to realize the two types of detectors.

  17. Noise characterization of silicon strip detectors-comparison of sensors with and without integrated jfet source-follower.

    CERN Document Server

    Giacomini, Gabriele

    Noise is often the main factor limiting the performance of detector systems. In this work a detailed study of the noise contributions in different types of silicon microstrip sensors is carried on. We investigate three sensors with double-sided readout fabricated by different suppliers for the ALICE experiment at the CERN LHC, in addition to detectors including an integrated JFET Source-Follower as a first signal conditioning stage. The latter have been designed as an attempt at improving the performance when very long strips, obtained by gangling together several sensors, are required. After a description of the strip sensors and of their operation, the “static” characterization measurements performed on them (current and capacitance versus voltage and/or frequency) are illustrated and interpreted. Numerical device simulation has been employed as an aid in interpreting some of the measurement results. The commonly used models for expressing the noise of the detector-amplifier system in terms of its relev...

  18. Modification of inkjet printer for polymer sensitive layer preparation on silicon-based gas sensors

    Directory of Open Access Journals (Sweden)

    Tianjian Li

    2015-04-01

    Full Text Available Inkjet printing is a versatile, low cost deposition technology with the capabilities for the localized deposition of high precision, patterned deposition in a programmable way, and the parallel deposition of a variety of materials. This paper demonstrates a new method of modifying the consumer inkjet printer to prepare polymer-sensitive layers on silicon wafer for gas sensor applications. A special printing tray for the modified inkjet printer to support a 4-inch silicon wafer is designed. The positioning accuracy of the deposition system is tested, based on the newly modified printer. The experimental data show that the positioning errors in the horizontal direction are negligibly small, while the positioning errors in the vertical direction rise with the increase of the printing distance of the wafer. The method for making suitable ink to be deposited to form the polymer-sensitive layer is also discussed. In the testing, a solution of 0.1 wt% polyvinyl alcohol (PVA was used as ink to prepare a sensitive layer with certain dimensions at a specific location on the surface of the silicon wafer, and the results prove the feasibility of the methods presented in this article.

  19. Electron-beam induced amorphization of stishovite: Silicon-coordination change observed using Si K-edge extended electron energy-loss fine structure

    Science.gov (United States)

    van Aken, P. A.; Sharp, T. G.; Seifert, F.

    The analysis of the extended energy-loss fine structure (EXELFS) of the Si K-edge for sixfold-coordinated Si in synthetic stishovite and fourfold-coordinated Si in natural α-quartz is reported by using electron energy-loss spectroscopy (EELS) in combination with transmission electron microscopy (TEM). The stishovite Si K-edge EXELFS spectra were measured as a time-dependent series to document irradiation-induced amorphization. The amorphization was also investigated through the change in Si K- and O K-edge energy-loss near edge structure (ELNES). For α-quartz, in contrast to stishovite, electron irradiation-induced vitrification, verified by selected area electron diffraction (SAED), produced no detectable changes of the EXELFS. The Si K-edge EXELFS were analysed with the classical extended X-ray absorption fine structure (EXAFS) treatment and compared to ab initio curve-waved multiple-scattering (MS) calculations of EXAFS spectra for stishovite and α-quartz. Highly accurate information on the local atomic environment of the silicon atoms during the irradiation-induced amorphization of stishovite is obtained from the EXELFS structure parameters (Si-O bond distances, coordination numbers and Debye-Waller factors). The mean Si-O bond distance R and mean Si coordination number N changes from R=0.1775 nm and N=6 for stishovite through a disordered intermediate state (R 0.172 nm and N 5) to R 0.167 nm and N 4.5 for a nearly amorphous state similar to α-quartz (R=0.1609 nm and N=4). During the amorphization process, the Debye-Waller factor (DWF) passes through a maximum value of as it changes from for sixfold to for fourfold coordination of Si. This increase in Debye-Waller factor indicates an increase in mean-square relative displacement (MSRD) between the central silicon atom and its oxygen neighbours that is consistent with the presence of an intermediate structural state with fivefold coordination of Si. The distribution of coordination states can be estimated by

  20. An optimized knife-edge method for on-orbit MTF estimation of optical sensors using powell parameter fitting

    Science.gov (United States)

    Han, Lu; Gao, Kun; Gong, Chen; Zhu, Zhenyu; Guo, Yue

    2017-08-01

    On-orbit Modulation Transfer Function (MTF) is an important indicator to evaluate the performance of the optical remote sensors in a satellite. There are many methods to estimate MTF, such as pinhole method, slit method and so on. Among them, knife-edge method is quite efficient, easy-to-use and recommended in ISO12233 standard for the wholefrequency MTF curve acquisition. However, the accuracy of the algorithm is affected by Edge Spread Function (ESF) fitting accuracy significantly, which limits the range of application. So in this paper, an optimized knife-edge method using Powell algorithm is proposed to improve the ESF fitting precision. Fermi function model is the most popular ESF fitting model, yet it is vulnerable to the initial values of the parameters. Considering the characteristics of simple and fast convergence, Powell algorithm is applied to fit the accurate parameters adaptively with the insensitivity to the initial parameters. Numerical simulation results reveal the accuracy and robustness of the optimized algorithm under different SNR, edge direction and leaning angles conditions. Experimental results using images of the camera in ZY-3 satellite show that this method is more accurate than the standard knife-edge method of ISO12233 in MTF estimation.

  1. CMS silicon tracker developments

    International Nuclear Information System (INIS)

    Civinini, C.; Albergo, S.; Angarano, M.; Azzi, P.; Babucci, E.; Bacchetta, N.; Bader, A.; Bagliesi, G.; Basti, A.; Biggeri, U.; Bilei, G.M.; Bisello, D.; Boemi, D.; Bosi, F.; Borrello, L.; Bozzi, C.; Braibant, S.; Breuker, H.; Bruzzi, M.; Buffini, A.; Busoni, S.; Candelori, A.; Caner, A.; Castaldi, R.; Castro, A.; Catacchini, E.; Checcucci, B.; Ciampolini, P.; Creanza, D.; D'Alessandro, R.; Da Rold, M.; Demaria, N.; De Palma, M.; Dell'Orso, R.; Della Marina, R.D.R.; Dutta, S.; Eklund, C.; Feld, L.; Fiore, L.; Focardi, E.; French, M.; Freudenreich, K.; Frey, A.; Fuertjes, A.; Giassi, A.; Giorgi, M.; Giraldo, A.; Glessing, B.; Gu, W.H.; Hall, G.; Hammarstrom, R.; Hebbeker, T.; Honma, A.; Hrubec, J.; Huhtinen, M.; Kaminsky, A.; Karimaki, V.; Koenig, St.; Krammer, M.; Lariccia, P.; Lenzi, M.; Loreti, M.; Luebelsmeyer, K.; Lustermann, W.; Maettig, P.; Maggi, G.; Mannelli, M.; Mantovani, G.; Marchioro, A.; Mariotti, C.; Martignon, G.; Evoy, B. Mc; Meschini, M.; Messineo, A.; Migliore, E.; My, S.; Paccagnella, A.; Palla, F.; Pandoulas, D.; Papi, A.; Parrini, G.; Passeri, D.; Pieri, M.; Piperov, S.; Potenza, R.; Radicci, V.; Raffaelli, F.; Raymond, M.; Santocchia, A.; Schmitt, B.; Selvaggi, G.; Servoli, L.; Sguazzoni, G.; Siedling, R.; Silvestris, L.; Starodumov, A.; Stavitski, I.; Stefanini, G.; Surrow, B.; Tempesta, P.; Tonelli, G.; Tricomi, A.; Tuuva, T.; Vannini, C.; Verdini, P.G.; Viertel, G.; Xie, Z.; Yahong, Li; Watts, S.; Wittmer, B.

    2002-01-01

    The CMS Silicon tracker consists of 70 m 2 of microstrip sensors which design will be finalized at the end of 1999 on the basis of systematic studies of device characteristics as function of the most important parameters. A fundamental constraint comes from the fact that the detector has to be operated in a very hostile radiation environment with full efficiency. We present an overview of the current results and prospects for converging on a final set of parameters for the silicon tracker sensors

  2. The New Silicon Strip Detectors for the CMS Tracker Upgrade

    CERN Document Server

    Dragicevic, Marko

    2010-01-01

    The first introductory part of the thesis describes the concept of the CMS experiment. The tasks of the various detector systems and their technical implementations in CMS are explained. To facilitate the understanding of the basic principles of silicon strip sensors, the subsequent chapter discusses the fundamentals in semiconductor technology, with particular emphasis on silicon. The necessary process steps to manufacture strip sensors in a so-called planar process are described in detail. Furthermore, the effects of irradiation on silicon strip sensors are discussed. To conclude the introductory part of the thesis, the design of the silicon strip sensors of the CMS Tracker are described in detail. The choice of the substrate material and the complex geometry of the sensors are reviewed and the quality assurance procedures for the production of the sensors are presented. Furthermore the design of the detector modules are described. The main part of this thesis starts with a discussion on the demands on the ...

  3. Fabrication of Transition Edge Sensor Microcalorimeters for X-Ray Focal Planes

    Science.gov (United States)

    Chervenak, James A.; Adams, Joseph S.; Audley, Heather; Bandler, Simon R.; Betancourt-Martinez, Gabriele; Eckart, Megan E.; Finkbeiner, Fred M.; Kelley, Richard L.; Kilbourne, Caroline; Lee, Sang Jun; hide

    2015-01-01

    Requirements for focal planes for x-ray astrophysics vary widely depending on the needs of the science application such as photon count rate, energy band, resolving power, and angular resolution. Transition edge sensor x-ray calorimeters can encounter limitations when optimized for these specific applications. Balancing specifications leads to choices in, for example, pixel size, thermal sinking arrangement, and absorber thickness and material. For the broadest specifications, instruments can benefit from multiple pixel types in the same array or focal plane. Here we describe a variety of focal plane architectures that anticipate science requirements of x-ray instruments for heliophysics and astrophysics. We describe the fabrication procedures that enable each array and explore limitations for the specifications of such arrays, including arrays with multiple pixel types on the same array.

  4. Absorber Materials for Transition-Edge Sensor X-ray Microcalorimeters

    Science.gov (United States)

    Brown, Ari-David; Bandler, Simon; Brekosky, Regis; Chervenak, James; Figueroa-Feliciano, Enectali; Finkbeiner, Fred; Sadleir, Jack; Iyomoto, Naoko; Kelley, Richard; Kilbourne, Caroline; hide

    2007-01-01

    Arrays of superconducting transition-edge sensors (TES) can provide high spatial and energy resolution necessary for x-ray astronomy. High quantum efficiency and uniformity of response can be achieved with a suitable absorber material, in which absorber x-ray stopping power, heat capacity, and thermal conductivity are relevant parameters. Here we compare these parameters for bismuth and gold. We have fabricated electroplated gold, electroplated gold/electroplated bismuth, and evaporated gold/evaporated bismuth 8x8 absorber arrays and find that a correlation exists between the residual resistance ratio (RRR) and thin film microstructure. This finding indicates that we can tailor absorber material conductivity via microstructure alteration, so as to permit absorber thermalization on timescales suitable for high energy resolution x-ray microcalorimetry. We show that by incorporating absorbers possessing large grain size, including electroplated gold and electroplated gold/electroplated bismuth, into our current Mo/Au TES, devices with tunable heat capacity and energy resolution of 2.3 eV (gold) and 2.1 eV (gold/bismuth) FWHM at 6 keV have been fabricated.

  5. Silicon pressure transducers: a review

    International Nuclear Information System (INIS)

    Aceves M, M.; Sandoval I, F.

    1994-01-01

    We present a review of the pressure sensors, which use the silicon piezo resistive effect and micro machining technique. Typical pressure sensors, applications, design and other different structures are presented. (Author)

  6. Influence of radiation induced defect clusters on silicon particle detectors

    International Nuclear Information System (INIS)

    Junkes, Alexandra

    2011-10-01

    The Large Hadron Collider (LHC) at the European Organization for Nuclear Research (CERN) addresses some of today's most fundamental questions of particle physics, like the existence of the Higgs boson and supersymmetry. Two large general-purpose experiments (ATLAS, CMS) are installed to detect the products of high energy protonproton and nucleon-nucleon collisions. Silicon detectors are largely employed in the innermost region, the tracking area of the experiments. The proven technology and large scale availability make them the favorite choice. Within the framework of the LHC upgrade to the high-luminosity LHC, the luminosity will be increased to L=10 35 cm -2 s -1 . In particular the pixel sensors in the innermost layers of the silicon trackers will be exposed to an extremely intense radiation field of mainly hadronic particles with fluences of up to Φ eq =10 16 cm -2 . The radiation induced bulk damage in silicon sensors will lead to a severe degradation of the performance during their operational time. This work focusses on the improvement of the radiation tolerance of silicon materials (Float Zone, Magnetic Czochralski, epitaxial silicon) based on the evaluation of radiation induced defects in the silicon lattice using the Deep Level Transient Spectroscopy and the Thermally Stimulated Current methods. It reveals the outstanding role of extended defects (clusters) on the degradation of sensor properties after hadron irradiation in contrast to previous works that treated effects as caused by point defects. It has been found that two cluster related defects are responsible for the main generation of leakage current, the E5 defects with a level in the band gap at E C -0.460 eV and E205a at E C -0.395 eV where E C is the energy of the edge of the conduction band. The E5 defect can be assigned to the tri-vacancy (V 3 ) defect. Furthermore, isochronal annealing experiments have shown that the V 3 defect exhibits a bistability, as does the leakage current. In oxygen

  7. Influence of radiation induced defect clusters on silicon particle detectors

    Energy Technology Data Exchange (ETDEWEB)

    Junkes, Alexandra

    2011-10-15

    The Large Hadron Collider (LHC) at the European Organization for Nuclear Research (CERN) addresses some of today's most fundamental questions of particle physics, like the existence of the Higgs boson and supersymmetry. Two large general-purpose experiments (ATLAS, CMS) are installed to detect the products of high energy protonproton and nucleon-nucleon collisions. Silicon detectors are largely employed in the innermost region, the tracking area of the experiments. The proven technology and large scale availability make them the favorite choice. Within the framework of the LHC upgrade to the high-luminosity LHC, the luminosity will be increased to L=10{sup 35} cm{sup -2}s{sup -1}. In particular the pixel sensors in the innermost layers of the silicon trackers will be exposed to an extremely intense radiation field of mainly hadronic particles with fluences of up to {phi}{sub eq}=10{sup 16} cm{sup -2}. The radiation induced bulk damage in silicon sensors will lead to a severe degradation of the performance during their operational time. This work focusses on the improvement of the radiation tolerance of silicon materials (Float Zone, Magnetic Czochralski, epitaxial silicon) based on the evaluation of radiation induced defects in the silicon lattice using the Deep Level Transient Spectroscopy and the Thermally Stimulated Current methods. It reveals the outstanding role of extended defects (clusters) on the degradation of sensor properties after hadron irradiation in contrast to previous works that treated effects as caused by point defects. It has been found that two cluster related defects are responsible for the main generation of leakage current, the E5 defects with a level in the band gap at E{sub C}-0.460 eV and E205a at E{sub C}-0.395 eV where E{sub C} is the energy of the edge of the conduction band. The E5 defect can be assigned to the tri-vacancy (V{sub 3}) defect. Furthermore, isochronal annealing experiments have shown that the V{sub 3} defect

  8. Haptic Edge Detection Through Shear

    Science.gov (United States)

    Platkiewicz, Jonathan; Lipson, Hod; Hayward, Vincent

    2016-03-01

    Most tactile sensors are based on the assumption that touch depends on measuring pressure. However, the pressure distribution at the surface of a tactile sensor cannot be acquired directly and must be inferred from the deformation field induced by the touched object in the sensor medium. Currently, there is no consensus as to which components of strain are most informative for tactile sensing. Here, we propose that shape-related tactile information is more suitably recovered from shear strain than normal strain. Based on a contact mechanics analysis, we demonstrate that the elastic behavior of a haptic probe provides a robust edge detection mechanism when shear strain is sensed. We used a jamming-based robot gripper as a tactile sensor to empirically validate that shear strain processing gives accurate edge information that is invariant to changes in pressure, as predicted by the contact mechanics study. This result has implications for the design of effective tactile sensors as well as for the understanding of the early somatosensory processing in mammals.

  9. Edge morphology evolution of graphene domains during chemical vapor deposition cooling revealed through hydrogen etching.

    Science.gov (United States)

    Zhang, Haoran; Zhang, Yanhui; Zhang, Yaqian; Chen, Zhiying; Sui, Yanping; Ge, Xiaoming; Yu, Guanghui; Jin, Zhi; Liu, Xinyu

    2016-02-21

    During cooling, considerable changes such as wrinkle formation and edge passivation occur in graphene synthesized on the Cu substrate. Wrinkle formation is caused by the difference in the thermal expansion coefficients of graphene and its substrate. This work emphasizes the cooling-induced edge passivation. The graphene-edge passivation can limit the regrowth of graphene at the domain edge. Our work shows that silicon-containing particles tend to accumulate at the graphene edge, and the formation of these particles is related to cooling. Furthermore, a clear curvature can be observed at the graphene edge on the Cu substrate, indicating the sinking of the graphene edge into the Cu substrate. Both the sinking of the graphene edge and the accumulation of silicon-containing particles are responsible for edge passivation. In addition, two kinds of graphene edge morphologies are observed after etching, which were explained by different etching mechanisms that illustrate the changes of the graphene edge during cooling.

  10. Performance Test Results of a Single-sided Silicon Strip Detector with a Radioactive Source and a Proton Beam

    International Nuclear Information System (INIS)

    Ki, Y. I.; Kah, D. H.; Son, D. H.; Kang, H. D.; Kim, H. J.; Kim, H. O.; Bae, J. B.; Ryu, S.; Park, H.; Kim, K. R.

    2007-01-01

    Due to high intrinsic precision and high speed properties of a silicon material, the silicon detector has been used in various applications such as medical imaging detector, radiation detector, positioning detectors in space science and experimental particle physics. High technology, modern equipment, and deep expertise are required to design and fabricate good quality of silicon sensors. Only few facilities in the world can develop silicon sensors which meet requirements of sensor performances. That is one of main reasons that the silicon sensor is so expensive and it takes time to purchase the silicon sensor once it is ordered. We designed and fabricated AC-coupled single-sided silicon strip sensors and developed front-end electronics and DAQ system to read out sensor signals. The silicon strip sensors were fabricated on a 5-in. n-type silicon wafer which has an orientation, high resistivity (>5 kΩ · cm) and a thickness of 380 μm. We measured the signal-to-noise ratio (SNR) of each channel by using a radioactive source and a 45 MeV proton beam from the MC-50 cyclotron at the Korea Institute of Radiological and Medical Science (KIRAMS) in Seoul. We present the measurement results of the SNRs of the silicon strip sensor with a proton beam and radioactive sources

  11. A low cost and hybrid technology for integrating silicon sensors or actuators in polymer microfluidic systems

    International Nuclear Information System (INIS)

    Charlot, Samuel; Gué, Anne-Marie; Tasselli, Josiane; Marty, Antoine; Abgrall, Patrick; Estève, Daniel

    2008-01-01

    This paper describes a new technology permitting a hybrid integration of silicon chips in polymer (PDMS and SU8) microfluidic structures. This two-step technology starts with transferring the silicon device onto a rigid substrate (typically PCB) and planarizing it, and then it proceeds with stacking of the polymer-made fluidic network onto the device. The technology is low cost, based on screen printing and lamination, can be applied to treat large surface areas, and is compatible with standard photolithography and vacuum based approaches. We show, as an example, the integration of a thermal sensor inside channels made of PDMS or SU8. The developed structures had no fluid leaks at the Si/polymer interfaces and the electrical circuit was perfectly tightproof. (note)

  12. Recent results with HV-CMOS and planar sensors for the CLIC vertex detector

    CERN Document Server

    AUTHOR|(SzGeCERN)734627

    2017-01-01

    The physics aims for the future multi-TeV e+e- Compact Linear Collider (CLIC) impose high precision requirements on the vertex detector which has to match the experimental conditions, such as the time structure of the collisions and the presence of beam-induced backgrounds. The principal challenges are: a point resolution of 3μm, 10 ns time stamping capabilities, low mass (⇠0.2% X0 per layer), low power dissipation and pulsed power operation. Recent results of test beam measurements and GEANT4 simulations for assemblies with Timepix3 ASICs and thin active-edge sensors are presented. The 65 nm CLICpix readout ASIC with 25μm pitch was bump bonded to planar silicon sensors and also capacitively coupled through a thin layer of glue to active HV-CMOS sensors. Test beam results for these two hybridisation concepts are presented.

  13. Minimizing guard ring dead space in silicon detectors with an n-type guard ring at the edge of the detector

    International Nuclear Information System (INIS)

    Palviainen, Tanja; Tuuva, Tuure; Leinonen, Kari

    2007-01-01

    Detectors with n-type silicon with an n + -type guard ring were investigated. In the present work, a new p + /n/n + detector structure with an n + guard ring is described. The guard ring is placed at the edge of the detector. The detector depletion region extends also sideways, allowing for signal collection very close to the n-guard ring. In this kind of detector structure, the dead space of the detector is minimized to be only below the guard ring. This is proved by simulations done using Silvaco/ATLAS software

  14. Minimizing guard ring dead space in silicon detectors with an n-type guard ring at the edge of the detector

    Energy Technology Data Exchange (ETDEWEB)

    Palviainen, Tanja [Lappeenranta University of Technology, P.O. Box 20, FIN-53851 Lappeenranta (Finland)]. E-mail: tanja.palviainen@lut.fi; Tuuva, Tuure [Lappeenranta University of Technology, P.O. Box 20, FIN-53851 Lappeenranta (Finland); Leinonen, Kari [Lappeenranta University of Technology, P.O. Box 20, FIN-53851 Lappeenranta (Finland)

    2007-04-01

    Detectors with n-type silicon with an n{sup +}-type guard ring were investigated. In the present work, a new p{sup +}/n/n{sup +} detector structure with an n{sup +} guard ring is described. The guard ring is placed at the edge of the detector. The detector depletion region extends also sideways, allowing for signal collection very close to the n-guard ring. In this kind of detector structure, the dead space of the detector is minimized to be only below the guard ring. This is proved by simulations done using Silvaco/ATLAS software.

  15. A CMOS-compatible large-scale monolithic integration of heterogeneous multi-sensors on flexible silicon for IoT applications

    KAUST Repository

    Nassar, Joanna M.

    2017-02-07

    We report CMOS technology enabled fabrication and system level integration of flexible bulk silicon (100) based multi-sensors platform which can simultaneously sense pressure, temperature, strain and humidity under various physical deformations. We also show an advanced wearable version for body vital monitoring which can enable advanced healthcare for IoT applications.

  16. A CMOS-compatible large-scale monolithic integration of heterogeneous multi-sensors on flexible silicon for IoT applications

    KAUST Repository

    Nassar, Joanna M.; Sevilla, Galo T.; Velling, Seneca J.; Cordero, Marlon D.; Hussain, Muhammad Mustafa

    2017-01-01

    We report CMOS technology enabled fabrication and system level integration of flexible bulk silicon (100) based multi-sensors platform which can simultaneously sense pressure, temperature, strain and humidity under various physical deformations. We also show an advanced wearable version for body vital monitoring which can enable advanced healthcare for IoT applications.

  17. The LHCb Silicon Tracker Project

    International Nuclear Information System (INIS)

    Agari, M.; Bauer, C.; Baumeister, D.; Blouw, J.; Hofmann, W.; Knoepfle, K.T.; Loechner, S.; Schmelling, M.; Pugatch, V.; Bay, A.; Carron, B.; Frei, R.; Jiminez-Otero, S.; Tran, M.-T.; Voss, H.; Adeva, B.; Esperante, D.; Lois, C.; Vasquez, P.; Bernhard, R.P.; Bernet, R.; Ermoline, Y.; Gassner, J.; Koestner, S.; Lehner, F.; Needham, M.; Siegler, M.; Steinkamp, O.; Straumann, U.; Vollhardt, A.; Volyanskyy, D.

    2006-01-01

    Two silicon strip detectors, the Trigger Tracker(TT) and the Inner Tracker(Italy) will be constructed for the LHCb experiment. Transverse momentum information extracted from the TT will be used in the Level 1 trigger. The IT is part of the main tracking system behind the magnet. Both silicon detectors will be read out using a custom-developed chip by the ASIC lab in Heidelberg. The signal-over-noise behavior and performance of various geometrical designs of the silicon sensors, in conjunction with the Beetle read-out chip, have been extensively studied in test beam experiments. Results from those experiments are presented, and have been used in the final choice of sensor geometry

  18. Magnetism of Nanographene-Based Microporous Carbon and Its Applications: Interplay of Edge Geometry and Chemistry Details in the Edge State

    Science.gov (United States)

    Enoki, Toshiaki; Kiguchi, Manabu

    2018-03-01

    magnetic moments of nanographenes. For applications, the edge-state spins in nanographene-based microporous carbon can be a good tool as a molecule sensor in detecting molecules having different chemical properties and sizes. The on-off magnetic switching phenomena upon the adsorption of H2O and other OH-containing molecules offers a molecule sensor. A He sensor, in which the edge-state spins is employed as a probe, is also proposed on the basis of a huge condensation of He into ultramicropores.

  19. Thermal detection of single e-h pairs in a biased silicon crystal detector

    Science.gov (United States)

    Romani, R. K.; Brink, P. L.; Cabrera, B.; Cherry, M.; Howarth, T.; Kurinsky, N.; Moffatt, R. A.; Partridge, R.; Ponce, F.; Pyle, M.; Tomada, A.; Yellin, S.; Yen, J. J.; Young, B. A.

    2018-01-01

    We demonstrate that individual electron-hole pairs are resolved in a 1 cm2 by 4 mm thick silicon crystal (0.93 g) operated at ˜35 mK. One side of the detector is patterned with two quasiparticle-trap-assisted electro-thermal-feedback transition edge sensor arrays held near ground potential. The other side contains a bias grid with 20% coverage. Bias potentials up to ±160 V were used in the work reported here. A fiber optic provides 650 nm (1.9 eV) photons that each produce an electron-hole (e- h+) pair in the crystal near the grid. The energy of the drifting charges is measured with a phonon sensor noise σ ˜0.09 e- h+ pair. The observed charge quantization is nearly identical for h+s or e-s transported across the crystal.

  20. HV Test of the CTS Edgeless Silicon Detector in Vacuum and Close to a Grounded Plate

    CERN Document Server

    Eremin, Vladimir; Ruggiero, Gennaro

    2007-01-01

    The TOTEM Roman Pot Silicon sensors will be operated in vacuum to minimise the mechanical stress of the thin metal window which separates the detector package from the ultra high vacuum of the beam. To approach the beam axis as close as possible the detectors will be mounted with their edge at a distance of the order 100 - 200 um from the thin metal window. As the detectors will be run in overdepletion mode to allow the full charge collection within the shaping time of the readout electronics, there will be a potential drop of more than 100 V across their edge. Moreover this potential drop might need to be further increased with the accumulated radiation dose. The main goals of the tests described in this note are: - Characterisation of the voltage-current characteristics when the detector edge is in the direct vicinity of a grounded metal plate which simulates the above mentioned vacuum window; - Demonstration of the detector operation in vacuum at different pressures.

  1. The PASTA chip for the silicon micro strip sensor of the PANDA MVD

    Energy Technology Data Exchange (ETDEWEB)

    Riccardi, Alberto; Brinkmann, Kai-Thomas; Di Pietro, Valentino; Quagli, Tommaso; Schnell, Robert; Zaunick, Hans-Georg [II. Physikalisches Institut, Justus-Liebig-Universitaet, Giessen (Germany); Ritman, James; Stockmanns, Tobias; Zambanini, Andre [Forschungszentrum Juelich (Germany); Rivetti, Angelo; Rolo, Manuel [INFN Sezione di Torino (Italy); Collaboration: PANDA-Collaboration

    2016-07-01

    In the Micro Vertex Detector, which is the innermost detector of PANDA, there are two different types of sensors: hybrid pixel and double sided micro strips. My work is focused on the development of the ASIC readout for the strips, which in the PANDA experiment must cope with a hit rate up to 50 kHz per channel. The energy loss measurement of the particles crossing the silicon sensor is obtained by implementing the Time over Threshold technique. The first PASTA (PANDA Strip ASIC) prototype is based on a Time to Digital Converter with an analog clock interpolator which combines good time resolution with a low power consumption. A full size chip was developed in a 0.11μ m CMOS technology and delivered in Autumn 2015. It features 64 channels with both analog and digital parts, a digital global controller, LVDS drivers and integrated bias. In the presentation, an overview of PASTA and the results of the first tests is presented.

  2. Rationally designed porous silicon as platform for optical biosensors

    International Nuclear Information System (INIS)

    Priano, G.; Acquaroli, L.N.; Lasave, L.C.; Battaglini, F.; Arce, R.D.; Koropecki, R.R.

    2012-01-01

    Optical porous silicon multilayer structures are able to work as sensitive chemical sensors or biosensors based in their optical response. An algorithm to simulate the optical response of these multilayers was developed, considering the optical properties of the individual layers. The algorithm allows designing and customizing the porous silicon structures according to a given application. The results obtained by the simulation were experimentally verified; for this purpose different photonic structures were prepared, such as Bragg reflectors and microcavities. Some of these structures have been derivatized by the introduction of aminosilane groups on the porous silicon surface. The algorithm also permits to simulate the effects produced by a non uniform derivatization of the multilayer. - Highlights: ► Mesoporous silicon structure ► Functionalization of mesoporous silicon as sensors ► Design of the one-dimensional photonic crystal ► Simulation of non-uniformity in covering the sensor structure

  3. Microcalorimetry and the transition-edge sensor

    Science.gov (United States)

    Lindeman, Mark Anton

    2000-10-01

    Many scientific and industrial applications call for quantum-efficient high-energy-resolution microcalorimeters for the measurement of x rays. The applications driving the development of these detectors involve the measurement of faint sources of x rays in which few photons reach the detector. Interesting astrophysical applications for these microcalorimeters include the measurement of composition and temperatures of stellar atmospheres and diffuse interstellar plasmas. Other applications of microcalorimeter technology include x-ray fluorescence (XRF) measurements of industrial or scientific samples. We are attempting to develop microcalorimeters with energy resolutions of several eV because many sources (such as celestial plasmas) contain combinations of elements producing emission lines spaced only a few eV apart. Our microcalorimeters consist of a metal-film absorber (250mum x 250mum x 3mum of copper) coupled to a superconducting transition-edge-sensor (TES) thermometer. This microcalorimeter demonstrated an energy resolution of 42 eV (FWHM) at 6 keV, excellent linearity, and showed no evidence of position dependent response. The response of our microcalorimeters depends both on the temperature of the microcalorimeter and on the electrical current conducted through the TES thermometer. We present a microcalorimeter model that extends previous microcalorimeter theory to include additional current dependent effects. The model makes predictions about the effects of various forms of noise. In addition, the model helps us to understand what measurements are useful for characterizing TES microcalorimeters. While the energy resolution we obtained was quite good (twice as good as conventional semiconductor-based x-ray detectors), the obtained resolution was not as good as expected, due to excess noise from fluctuations in the TES thermometer. The energy resolution of future TES microcalorimeters can be improved by redesigning the calorimeters to minimize the noise due

  4. Microcalorimetry and the transition-edge sensor

    International Nuclear Information System (INIS)

    Lindeman, M A

    2000-01-01

    Many scientific and industrial applications call for quantum-efficient high-energy-resolution microcalorimeters for the measurement of x rays. The applications driving the development of these detectors involve the measurement of faint sources of x rays in which few photons reach the detector. Interesting astrophysical applications for these microcalorimeters include the measurement of composition and temperatures of stellar atmospheres and diffuse interstellar plasmas. Other applications of microcalorimeter technology include x-ray fluorescence (XRF) measurements of industrial or scientific samples. We are attempting to develop microcalorimeters with energy resolutions of several eV because many sources (such as celestial plasmas) contain combinations of elements producing emission lines spaced only a few eV apart. Our microcalorimeters consist of a metal-film absorber (250 (micro)m x 250(micro)m x 3 (micro)m of copper) coupled to a superconducting transition-edge-sensor (TES) thermometer. This microcalorimeter demonstrated an energy resolution of 42 eV (FWHM) at 6 keV, excellent linearity, and showed no evidence of position dependent response. The response of our microcalorimeters depends both on the temperature of the microcalorimeter and on the electrical current conducted through the TES thermometer. We present a microcalorimeter model that extends previous microcalorimeter theory to include additional current dependent effects. The model makes predictions about the effects of various forms of noise. In addition, the model helps us to understand what measurements are useful for characterizing TES microcalorimeters. While the energy resolution we obtained was quite good (twice as good as conventional semiconductor-based x-ray detectors), the obtained resolution was not as good as expected, due to excess noise from fluctuations in the TES thermometer. The energy resolution of future TES microcalorimeters can be improved by redesigning the calorimeters to

  5. Functional test of a Radon sensor based on a high-resistivity-silicon BJT detector

    Energy Technology Data Exchange (ETDEWEB)

    Dalla Betta, G.F., E-mail: dallabe@disi.unitn.it [DISI, Università di Trento, and INFN Trento, Trento (Italy); RSens srl, Modena (Italy); Tyzhnevyi, V. [DISI, Università di Trento, and INFN Trento, Trento (Italy); Bosi, A.; Bonaiuti, M. [RSens srl, Modena (Italy); Angelini, C.; Batignani, G.; Bettarini, S.; Bosi, F.; Forti, F.; Giorgi, M.A.; Morsani, F.; Paoloni, E.; Rizzo, G.; Walsh, J. [Dipartimento di Fisica, Università di Pisa, and INFN Pisa, Pisa (Italy); Lusiani, A. [Scuola Normale Superiore and INFN Pisa, Pisa (Italy); Ciolini, R.; Curzio, G.; D' Errico, F.; Del Gratta, A. [Dipartimento di Ingegneria Meccanica, Nucleare e della Produzione, Università di Pisa, Pisa (Italy); Bidinelli, L. [En and tech, Università di Modena e Reggio Emilia, Reggio Emilia (Italy); RSens srl, Modena (Italy); and others

    2013-08-01

    A battery-powered, wireless Radon sensor has been designed and realized using a BJT, fabricated on a high-resistivity-silicon substrate, as a radiation detector. Radon daughters are electrostatically collected on the detector surface. Thanks to the BJT internal amplification, real-time α particle detection is possible using simple readout electronics, which records the particle arrival time and charge. Functional tests at known Radon concentrations, demonstrated a sensitivity up to 4.9 cph/(100 Bq/m{sup 3}) and a count rate of 0.05 cph at nominally-zero Radon concentration.

  6. Performance study of double SOI image sensors

    Science.gov (United States)

    Miyoshi, T.; Arai, Y.; Fujita, Y.; Hamasaki, R.; Hara, K.; Ikegami, Y.; Kurachi, I.; Nishimura, R.; Ono, S.; Tauchi, K.; Tsuboyama, T.; Yamada, M.

    2018-02-01

    Double silicon-on-insulator (DSOI) sensors composed of two thin silicon layers and one thick silicon layer have been developed since 2011. The thick substrate consists of high resistivity silicon with p-n junctions while the thin layers are used as SOI-CMOS circuitry and as shielding to reduce the back-gate effect and crosstalk between the sensor and the circuitry. In 2014, a high-resolution integration-type pixel sensor, INTPIX8, was developed based on the DSOI concept. This device is fabricated using a Czochralski p-type (Cz-p) substrate in contrast to a single SOI (SSOI) device having a single thin silicon layer and a Float Zone p-type (FZ-p) substrate. In the present work, X-ray spectra of both DSOI and SSOI sensors were obtained using an Am-241 radiation source at four gain settings. The gain of the DSOI sensor was found to be approximately three times that of the SSOI device because the coupling capacitance is reduced by the DSOI structure. An X-ray imaging demonstration was also performed and high spatial resolution X-ray images were obtained.

  7. Integrated Microfluidic Gas Sensors for Water Monitoring

    Science.gov (United States)

    Zhu, L.; Sniadecki, N.; DeVoe, D. L.; Beamesderfer, M.; Semancik, S.; DeVoe, D. L.

    2003-01-01

    A silicon-based microhotplate tin oxide (SnO2) gas sensor integrated into a polymer-based microfluidic system for monitoring of contaminants in water systems is presented. This device is designed to sample a water source, control the sample vapor pressure within a microchannel using integrated resistive heaters, and direct the vapor past the integrated gas sensor for analysis. The sensor platform takes advantage of novel technology allowing direct integration of discrete silicon chips into a larger polymer microfluidic substrate, including seamless fluidic and electrical interconnects between the substrate and silicon chip.

  8. Rationally designed porous silicon as platform for optical biosensors

    Energy Technology Data Exchange (ETDEWEB)

    Priano, G. [INQUIMAE, DQIAyQF, FCEN, Universidad de Buenos Aires, Ciudad Universitaria, Pabellon 2 (C1428EHA) Buenos Aires (Argentina); Acquaroli, L.N.; Lasave, L.C. [Instituto De Desarrollo Tecnologico Para La Industria Quimica, UNL, CONICET, Gueemes 3450 (S3000GLN) Santa Fe (Argentina); Battaglini, F. [INQUIMAE, DQIAyQF, FCEN, Universidad de Buenos Aires, Ciudad Universitaria, Pabellon 2 (C1428EHA) Buenos Aires (Argentina); Arce, R.D., E-mail: rarce@intec.unl.edu.ar [Instituto De Desarrollo Tecnologico Para La Industria Quimica, UNL, CONICET, Gueemes 3450 (S3000GLN) Santa Fe (Argentina); Departamento De Materiales, Facultad De Ingenieria Quimica, UNL, Santiago del Estero 2829 (S3000) Santa Fe (Argentina); Koropecki, R.R. [Instituto De Desarrollo Tecnologico Para La Industria Quimica, UNL, CONICET, Gueemes 3450 (S3000GLN) Santa Fe (Argentina); Departamento De Materiales, Facultad De Ingenieria Quimica, UNL, Santiago del Estero 2829 (S3000) Santa Fe (Argentina)

    2012-08-01

    Optical porous silicon multilayer structures are able to work as sensitive chemical sensors or biosensors based in their optical response. An algorithm to simulate the optical response of these multilayers was developed, considering the optical properties of the individual layers. The algorithm allows designing and customizing the porous silicon structures according to a given application. The results obtained by the simulation were experimentally verified; for this purpose different photonic structures were prepared, such as Bragg reflectors and microcavities. Some of these structures have been derivatized by the introduction of aminosilane groups on the porous silicon surface. The algorithm also permits to simulate the effects produced by a non uniform derivatization of the multilayer. - Highlights: Black-Right-Pointing-Pointer Mesoporous silicon structure Black-Right-Pointing-Pointer Functionalization of mesoporous silicon as sensors Black-Right-Pointing-Pointer Design of the one-dimensional photonic crystal Black-Right-Pointing-Pointer Simulation of non-uniformity in covering the sensor structure.

  9. Tuning SPT-3G Transition-Edge-Sensor Electrical Properties with a Four-Layer Ti-Au-Ti-Au Thin-Film Stack

    Science.gov (United States)

    Carter, F. W.; Ade, P. A. R.; Ahmed, Z.; Anderson, A. J.; Austermann, J. E.; Avva, J. S.; Thakur, R. Basu; Bender, A. N.; Benson, B. A.; Carlstrom, J. E.; Cecil, T.; Chang, C. L.; Cliche, J. F.; Cukierman, A.; Denison, E. V.; de Haan, T.; Ding, J.; Divan, R.; Dobbs, M. A.; Dutcher, D.; Everett, W.; Foster, A.; Gannon, R. N.; Gilbert, A.; Groh, J. C.; Halverson, N. W.; Harke-Hosemann, A. H.; Harrington, N. L.; Henning, J. W.; Hilton, G. C.; Holzapfel, W. L.; Huang, N.; Irwin, K. D.; Jeong, O. B.; Jonas, M.; Khaire, T.; Kofman, A. M.; Korman, M.; Kubik, D.; Kuhlmann, S.; Kuo, C. L.; Kutepova, V.; Lee, A. T.; Lowitz, A. E.; Meyer, S. S.; Michalik, D.; Miller, C. S.; Montgomery, J.; Nadolski, A.; Natoli, T.; Nguyen, H.; Noble, G. I.; Novosad, V.; Padin, S.; Pan, Z.; Pearson, J.; Posada, C. M.; Rahlin, A.; Ruhl, J. E.; Saunders, L. J.; Sayre, J. T.; Shirley, I.; Shirokoff, E.; Smecher, G.; Sobrin, J. A.; Stan, L.; Stark, A. A.; Story, K. T.; Suzuki, A.; Tang, Q. Y.; Thompson, K. L.; Tucker, C.; Vale, L. R.; Vanderlinde, K.; Vieira, J. D.; Wang, G.; Whitehorn, N.; Yefremenko, V.; Yoon, K. W.; Young, M. R.

    2018-04-01

    We have developed superconducting Ti transition-edge sensors with Au protection layers on the top and bottom for the South Pole Telescope's third-generation receiver (a cosmic microwave background polarimeter, due to be upgraded this austral summer of 2017/2018). The base Au layer (deposited on a thin Ti glue layer) isolates the Ti from any substrate effects; the top Au layer protects the Ti from oxidation during processing and subsequent use of the sensors. We control the transition temperature and normal resistance of the sensors by varying the sensor width and the relative thicknesses of the Ti and Au layers. The transition temperature is roughly six times more sensitive to the thickness of the base Au layer than to that of the top Au layer. The normal resistance is inversely proportional to sensor width for any given film configuration. For widths greater than five micrometers, the critical temperature is independent of width.

  10. Characterization of proton and neutron irradiated low resistivity p-on-n magnetic Czochralski ministrip sensors and diodes

    International Nuclear Information System (INIS)

    Pacifico, Nicola; Dolenc Kittelmann, Irena; Fahrer, Manuel; Moll, Michael; Militaru, Otilia

    2011-01-01

    Transient Current Technique (TCT) and Charge Collection Efficiency (CCE) measurements were performed on low resistivity (280Ωcm) n-bulk, p-readout magnetic Czochralski ministrip sensors and diodes. The detectors were irradiated with neutrons and 24 GeV/c protons up to a total NIEL equivalent fluence of 8×10 15 /cm 2 . The study was addressed to assess the radiation tolerance of the detectors up to fluences expected in the next generations of High Energy Physics experiments. The charge collection efficiency after irradiation was found to be much higher than for standard FZ silicon p-in-n sensors. The underlying physics of this remarkable result was investigated by performing Edge-TCT measurements on one of the neutron irradiated ministrip sensors to extract detailed informations about the field and efficiency profiles of the detector.

  11. MEMS based Low Cost Piezoresistive Microcantilever Force Sensor and Sensor Module.

    Science.gov (United States)

    Pandya, H J; Kim, Hyun Tae; Roy, Rajarshi; Desai, Jaydev P

    2014-03-01

    In the present work, we report fabrication and characterization of a low-cost MEMS based piezoresistive micro-force sensor with SU-8 tip using laboratory made silicon-on-insulator (SOI) substrate. To prepare SOI wafer, silicon film (0.8 µm thick) was deposited on an oxidized silicon wafer using RF magnetron sputtering technique. The films were deposited in Argon (Ar) ambient without external substrate heating. The material characteristics of the sputtered deposited silicon film and silicon film annealed at different temperatures (400-1050°C) were studied using atomic force microscopy (AFM) and X-ray diffraction (XRD) techniques. The residual stress of the films was measured as a function of annealing temperature. The stress of the as-deposited films was observed to be compressive and annealing the film above 1050°C resulted in a tensile stress. The stress of the film decreased gradually with increase in annealing temperature. The fabricated cantilevers were 130 µm in length, 40 µm wide and 1.0 µm thick. A series of force-displacement curves were obtained using fabricated microcantilever with commercial AFM setup and the data were analyzed to get the spring constant and the sensitivity of the fabricated microcantilever. The measured spring constant and sensitivity of the sensor was 0.1488N/m and 2.7mV/N. The microcantilever force sensor was integrated with an electronic module that detects the change in resistance of the sensor with respect to the applied force and displays it on the computer screen.

  12. X-ray-to-current signal conversion characteristics of trench-structured photodiodes for direct-conversion-type silicon X-ray sensor

    International Nuclear Information System (INIS)

    Ariyoshi, Tetsuya; Funaki, Shota; Sakamoto, Kenji; Baba, Akiyoshi; Arima, Yutaka

    2017-01-01

    To reduce the radiation dose required in medical X-ray diagnoses, we propose a high-sensitivity direct-conversion-type silicon X-ray sensor that uses trench-structured photodiodes. This sensor is advantageous in terms of its long device lifetime, noise immunity, and low power consumption because of its low bias voltage. With this sensor, it is possible to detect X-rays with almost 100% efficiency; sensitivity can therefore be improved by approximately 10 times when compared with conventional indirect-conversion-type sensors. In this study, a test chip was fabricated using a single-poly single-metal 0.35 μm process. The formed trench photodiodes for the X-ray sensor were approximately 170 and 300 μm deep. At a bias voltage of 25 V, the absorbed X-ray-to-current signal conversion efficiencies were 89.3% (theoretical limit; 96.7%) at a trench depth of 170 μm and 91.1% (theoretical limit; 94.3%) at a trench depth of 300 μm. (author)

  13. Silicon carbide transparent chips for compact atomic sensors

    Science.gov (United States)

    Huet, L.; Ammar, M.; Morvan, E.; Sarazin, N.; Pocholle, J.-P.; Reichel, J.; Guerlin, C.; Schwartz, S.

    2017-11-01

    Atom chips [1] are an efficient tool for trapping, cooling and manipulating cold atoms, which could open the way to a new generation of compact atomic sensors addressing space applications. This is in particular due to the fact that they can achieve strong magnetic field gradients near the chip surface, hence strong atomic confinement at moderate electrical power. However, this advantage usually comes at the price of reducing the optical access to the atoms, which are confined very close to the chip surface. We will report at the conference experimental investigations showing how these limits could be pushed farther by using an atom chip made of a gold microcircuit deposited on a single-crystal Silicon Carbide (SiC) substrate [2]. With a band gap energy value of about 3.2 eV at room temperature, the latter material is transparent at 780nm, potentially restoring quasi full optical access to the atoms. Moreover, it combines a very high electrical resistivity with a very high thermal conductivity, making it a good candidate for supporting wires with large currents without the need of any additional electrical insulation layer [3].

  14. Synthesis and characterization of porous silicon gas sensors

    Science.gov (United States)

    abbas, Roaa A.; Alwan, Alwan M.; Abdulhamied, Zainab T.

    2018-05-01

    In this work, photo-electrochemical etching process of n-type Silicon of resistivity(10 Ω.cm) and (100) orientation, using two illumination sources IR and violet wavelength in HF acid have been used to produce PSi gas detection device. The fabrication process was carried out at a fixed etching current density of 25mA/cm2 and at different etching time (5, 10, 15 and 20) min and (8, 16, 24, and 30) min. Two configurations of gas sensor configuration planer and sandwich have been made and investigated. The morphological properties have been studied using SEM,the FTIR measurement show that the (Si-Hx) and (Si-O-Si) absorption peak were increases with increasing etching time,and Photoluminescence properties of PSi layer show decrease in the peak of PL peak toward the violet shift. The gas detection process is made on the CO2 gas at different operating temperature and fixed gas concentration. In the planner structure, the gas sensing was measured through, the change in the resistance readout as a function to the exposure time, while for sandwich structure J-V characteristic have been made to determine the sensitivity.

  15. Porous Silicon Nanowires

    Science.gov (United States)

    Qu, Yongquan; Zhou, Hailong; Duan, Xiangfeng

    2011-01-01

    In this minreview, we summarize recent progress in the synthesis, properties and applications of a new type of one-dimensional nanostructures — single crystalline porous silicon nanowires. The growth of porous silicon nanowires starting from both p- and n-type Si wafers with a variety of dopant concentrations can be achieved through either one-step or two-step reactions. The mechanistic studies indicate the dopant concentration of Si wafers, oxidizer concentration, etching time and temperature can affect the morphology of the as-etched silicon nanowires. The porous silicon nanowires are both optically and electronically active and have been explored for potential applications in diverse areas including photocatalysis, lithium ion battery, gas sensor and drug delivery. PMID:21869999

  16. Impedance measurements on a fast transition-edge sensor for optical and near-infrared range

    International Nuclear Information System (INIS)

    Taralli, E; Portesi, C; Lolli, L; Monticone, E; Rajteri, M; Novikov, I; Beyer, J

    2010-01-01

    Impedance measurements of superconducting transition-edge sensors (TESs) are a powerful tool to obtain information about the TES thermal and electrical properties. We apply this technique to a 20 μm x 20 μm Ti/Au TES, suitable for application in the optical and near-infrared range, and extend the measurements up to 250 kHz in order to obtain a complete frequency response in the complex plane. From these measurements we obtain important thermal and electrical device parameters such as heat capacity C, thermal conductance G and effective thermal time constant τ eff that will be compared with the corresponding values obtained from noise measurements.

  17. Process Simulation and Characterization of Substrate Engineered Silicon Thin Film Transistor for Display Sensors and Large Area Electronics

    International Nuclear Information System (INIS)

    Hashmi, S M; Ahmed, S

    2013-01-01

    Design, simulation, fabrication and post-process qualification of substrate-engineered Thin Film Transistors (TFTs) are carried out to suggest an alternate manufacturing process step focused on display sensors and large area electronics applications. Damage created by ion implantation of Helium and Silicon ions into single-crystalline n-type silicon substrate provides an alternate route to create an amorphized region responsible for the fabrication of TFT structures with controllable and application-specific output parameters. The post-process qualification of starting material and full-cycle devices using Rutherford Backscattering Spectrometry (RBS) and Proton or Particle induced X-ray Emission (PIXE) techniques also provide an insight to optimize the process protocols as well as their applicability in the manufacturing cycle

  18. SU-8 Based Piezoresistive Mechanical Sensor

    DEFF Research Database (Denmark)

    Thaysen, Jacob; Yalcinkaya, Arda Deniz; Vestergaard, R.K.

    2002-01-01

    We present the first SU-8 based piezoresistive mechanical sensor. Conventionally, silicon has been used as a piezoresistive material due to its high gauge factor and thereby high sensitivity to strain changes in a sensor. By using the fact that SU-8 is much softer than silicon and that a gold...

  19. X-ray and synchrotron studies of porous silicon

    Energy Technology Data Exchange (ETDEWEB)

    Sivkov, V. N., E-mail: svn@dm.komisc.ru [Russian Academy of Sciences, Komi Scientific Center, Ural Branch (Russian Federation); Lomov, A. A. [Russian Academy of Sciences, Physical-Technological Institute (Russian Federation); Vasil' ev, A. L. [Russian Academy of Sciences, Shubnikov Institute of Crystallography (Russian Federation); Nekipelov, S. V. [Komi State Pedagogical Institute (Russian Federation); Petrova, O. V. [Russian Academy of Sciences, Komi Scientific Center, Ural Branch (Russian Federation)

    2013-08-15

    The results of comprehensive studies of layers of porous silicon of different conductivity types, grown by anodizing standard Si(111) substrates in an electrolyte based on fluoric acid and ethanol with the addition of 5% of iodine and kept in air for a long time, are discussed. Measurements are performed by scanning electron microscopy, high-resolution X-ray diffraction, and ultrasoft X-ray spectroscopy using synchrotron radiation. The structural parameters of the layers (thickness, strain, and porosity) and atomic and chemical composition of the porous-silicon surface are determined. It is found that an oxide layer 1.5-2.3-nm thick is formed on the surface of the silicon skeleton. The near-edge fine structure of the Si 2p absorption spectrum of this layer corresponds to the fine structure of the 2p spectrum of well coordinated SiO{sub 2}. In this case, the fine structure in the Si 2p-edge absorption region of the silicon skeleton is identical to that of the 2p absorption spectrum of crystalline silicon.

  20. Effect of Silicon Nanowire on Crystalline Silicon Solar Cell Characteristics

    OpenAIRE

    Zahra Ostadmahmoodi Do; Tahereh Fanaei Sheikholeslami; Hassan Azarkish

    2016-01-01

    Nanowires (NWs) are recently used in several sensor or actuator devices to improve their ordered characteristics. Silicon nanowire (Si NW) is one of the most attractive one-dimensional nanostructures semiconductors because of its unique electrical and optical properties. In this paper, silicon nanowire (Si NW), is synthesized and characterized for application in photovoltaic device. Si NWs are prepared using wet chemical etching method which is commonly used as a simple and low cost method fo...

  1. Hydrogen passivation of silicon sheet solar cells

    International Nuclear Information System (INIS)

    Tsuo, Y.S.; Milstein, J.B.

    1984-01-01

    Significant improvements in the efficiencies of dendritic web and edge-supported-pulling silicon sheet solar cells have been obtained after hydrogen ion beam passivation for a period of ten minutes or less. We have studied the effects of the hydrogen ion beam treatment with respect to silicon material damage, silicon sputter rate, introduction of impurities, and changes in reflectance. The silicon sputter rate for constant ion beam flux of 0.60 +- 0.05 mA/cm 2 exhibits a maximum at approximately 1400-eV ion beam energy

  2. Patterning of diamond like carbon films for sensor applications using silicon containing thermoplastic resist (SiPol) as a hard mask

    Energy Technology Data Exchange (ETDEWEB)

    Virganavičius, D. [Paul Scherrer Institute, Laboratory for Micro- and Nanotechnology, 5232 Villigen PSI (Switzerland); Kaunas University of Technology, Institute of Materials Science, 51423 Kaunas (Lithuania); Cadarso, V.J.; Kirchner, R. [Paul Scherrer Institute, Laboratory for Micro- and Nanotechnology, 5232 Villigen PSI (Switzerland); Stankevičius, L.; Tamulevičius, T.; Tamulevičius, S. [Kaunas University of Technology, Institute of Materials Science, 51423 Kaunas (Lithuania); Schift, H., E-mail: helmut.schift@psi.ch [Paul Scherrer Institute, Laboratory for Micro- and Nanotechnology, 5232 Villigen PSI (Switzerland)

    2016-11-01

    Highlights: • Nanopatterning of thin diamond-like carbon (DLC) films and silver containing DLC composites. • Nanoimprint lithography with thermoplastic silicon containing resist. • Zero-residual layer imprinting and pattern transfer by reactive ion etching. • Robust leaky waveguide sensors with sensitivity up to 319 nm/RIU. - Abstract: Patterning of diamond-like carbon (DLC) and DLC:metal nanocomposites is of interest for an increasing number of applications. We demonstrate a nanoimprint lithography process based on silicon containing thermoplastic resist combined with plasma etching for straightforward patterning of such films. A variety of different structures with few hundred nanometer feature size and moderate aspect ratios were successfully realized. The quality of produced patterns was directly investigated by the means of optical and scanning electron microscopy (SEM). Such structures were further assessed by employing them in the development of gratings for guided mode resonance (GMR) effect. Optical characterization of such leaky waveguide was compared with numerical simulations based on rigorous coupled wave analysis method with good agreement. The use of such structures as refractive index variation sensors is demonstrated with sensitivity up to 319 nm/RIU, achieving an improvement close to 450% in sensitivity compared to previously reported similar sensors. This pronounced GMR signal fully validates the employed DLC material, the technology to pattern it and the possibility to develop DLC based gratings as corrosion and wear resistant refractometry sensors that are able to operate under harsh conditions providing great value and versatility.

  3. High Sensitivity pH Sensor Based on Porous Silicon (PSi) Extended Gate Field-Effect Transistor.

    Science.gov (United States)

    Al-Hardan, Naif H; Abdul Hamid, Muhammad Azmi; Ahmed, Naser M; Jalar, Azman; Shamsudin, Roslinda; Othman, Norinsan Kamil; Kar Keng, Lim; Chiu, Weesiong; Al-Rawi, Hamzah N

    2016-06-07

    In this study, porous silicon (PSi) was prepared and tested as an extended gate field-effect transistor (EGFET) for pH sensing. The prepared PSi has pore sizes in the range of 500 to 750 nm with a depth of approximately 42 µm. The results of testing PSi for hydrogen ion sensing in different pH buffer solutions reveal that the PSi has a sensitivity value of 66 mV/pH that is considered a super Nernstian value. The sensor considers stability to be in the pH range of 2 to 12. The hysteresis values of the prepared PSi sensor were approximately 8.2 and 10.5 mV in the low and high pH loop, respectively. The result of this study reveals a promising application of PSi in the field for detecting hydrogen ions in different solutions.

  4. Production and characterization of SLID interconnected n-in-p pixel modules with 75 micron thin silicon sensors

    CERN Document Server

    Andricek, L; Macchiolo, A; Moser, H.G; Nisius, R; Richter, R.H; Terzo, S; Weigell, P

    2014-01-01

    The performance of pixel modules built from 75 micrometer thin silicon sensors and ATLAS read-out chips employing the Solid Liquid InterDiffusion (SLID) interconnection technology is presented. This technology, developed by the Fraunhofer EMFT, is a possible alternative to the standard bump-bonding. It allows for stacking of different interconnected chip and sensor layers without destroying the already formed bonds. In combination with Inter-Chip-Vias (ICVs) this paves the way for vertical integration. Both technologies are combined in a pixel module concept which is the basis for the modules discussed in this paper. Mechanical and electrical parameters of pixel modules employing both SLID interconnections and sensors of 75 micrometer thickness are covered. The mechanical features discussed include the interconnection efficiency, alignment precision and mechanical strength. The electrical properties comprise the leakage currents, tuning characteristics, charge collection, cluster sizes and hit efficiencies. T...

  5. Production and Characterisation of SLID Interconnected n-in-p Pixel Modules with 75 Micrometer Thin Silicon Sensors

    CERN Document Server

    Andricek, L; Macchiolo, A.; Moser, H.-G.; Nisius, R.; Richter, R.H.; Terzo, S.; Weigell, P.

    2014-01-01

    The performance of pixel modules built from 75 micrometer thin silicon sensors and ATLAS read-out chips employing the Solid Liquid InterDiffusion (SLID) interconnection technology is presented. This technology, developed by the Fraunhofer EMFT, is a possible alternative to the standard bump-bonding. It allows for stacking of different interconnected chip and sensor layers without destroying the already formed bonds. In combination with Inter-Chip-Vias (ICVs) this paves the way for vertical integration. Both technologies are combined in a pixel module concept which is the basis for the modules discussed in this paper. Mechanical and electrical parameters of pixel modules employing both SLID interconnections and sensors of 75 micrometer thickness are covered. The mechanical features discussed include the interconnection efficiency, alignment precision and mechanical strength. The electrical properties comprise the leakage currents, tunability, charge collection, cluster sizes and hit efficiencies. Targeting at ...

  6. Edge printability: techniques used to evaluate and improve extreme wafer edge printability

    Science.gov (United States)

    Roberts, Bill; Demmert, Cort; Jekauc, Igor; Tiffany, Jason P.

    2004-05-01

    The economics of semiconductor manufacturing have forced process engineers to develop techniques to increase wafer yield. Improvements in process controls and uniformities in all areas of the fab have reduced film thickness variations at the very edge of the wafer surface. This improved uniformity has provided the opportunity to consider decreasing edge exclusions, and now the outermost extents of the wafer must be considered in the yield model and expectations. These changes have increased the requirements on lithography to improve wafer edge printability in areas that previously were not even coated. This has taxed all software and hardware components used in defining the optical focal plane at the wafer edge. We have explored techniques to determine the capabilities of extreme wafer edge printability and the components of the systems that influence this printability. We will present current capabilities and new detection techniques and the influence that the individual hardware and software components have on edge printability. We will show effects of focus sensor designs, wafer layout, utilization of dummy edge fields, the use of non-zero overlay targets and chemical/optical edge bead optimization.

  7. Development of micro capacitive accelerometer for subsurface microseismic measurement. Second Report; Micromachining ni yoru chika danseiha kenshutsu no tame no silicone yoryogata kasokudo sensor no seisaku. 2

    Energy Technology Data Exchange (ETDEWEB)

    Nishizawa, M; Lim, G; Niitsuma, H; Esashi, M [Tohoku University, Sendai (Japan)

    1997-10-22

    Micromachining-aided manufacture is under way of a silicon capacitive accelerator sensor, high in sensitivity and broad in bandwidth, for detecting subsurface microseismic waves. The sensor detects acceleration by use of changes in capacities of the top and bottom capacitors generated when a spring-supported weight experiences displacement upon application of acceleration to the said weight. A diode bridge circuit is employed as the circuit for detecting acceleration. As for sensitivity of the sensor, when the virtual noise inputted into the electronic circuit is presumed at 1{mu}V and the circuit driving voltage at 5V, the sensor minimum detectability will be 2.5mgal in the presence of a 3{mu}m gap between the weight and an electrode plate. The natural vibration frequency is set at 1kHz. Such specifications may be realized using the current micromachining technology, and possibilities are that the bandwidth will be further expanded when the sensor is used in a servo-type configuration. The effort is still at the stage of acceleration sensor manufacturing, with a stopper just formed for the silicon weight. 9 refs., 6 figs., 1 tab.

  8. Microstructure Analysis of Bismuth Absorbers for Transition-Edge Sensor X-ray Microcalorimeters

    Science.gov (United States)

    Yan, Daikang; Divan, Ralu; Gades, Lisa M.; Kenesei, Peter; Madden, Timothy J.; Miceli, Antonino; Park, Jun-Sang; Patel, Umeshkumar M.; Quaranta, Orlando; Sharma, Hemant; Bennett, Douglas A.; Doriese, William B.; Fowler, Joseph W.; Gard, Johnathon D.; Hays-Wehle, James P.; Morgan, Kelsey M.; Schmidt, Daniel R.; Swetz, Daniel S.; Ullom, Joel N.

    2018-03-01

    Given its large X-ray stopping power and low specific heat capacity, bismuth (Bi) is a promising absorber material for X-ray microcalorimeters and has been used with transition-edge sensors (TESs) in the past. However, distinct X-ray spectral features have been observed in TESs with Bi absorbers deposited with different techniques. Evaporated Bi absorbers are widely reported to have non-Gaussian low-energy tails, while electroplated ones do not show this feature. In this study, we fabricated Bi absorbers with these two methods and performed microstructure analysis using scanning electron microscopy and X-ray diffraction microscopy. The two types of material showed the same crystallographic structure, but the grain size of the electroplated Bi was about 40 times larger than that of the evaporated Bi. This distinction in grain size is likely to be the cause of their different spectral responses.

  9. Translating silicon nanowire BioFET sensor-technology to embedded point-of-care medical diagnostics

    DEFF Research Database (Denmark)

    Pfreundt, Andrea; Zulfiqar, Azeem; Patou, François

    2013-01-01

    Silicon nanowire and nanoribbon biosensors have shown great promise in the detection of biomarkers at very low concentrations. Their high sensitivity makes them ideal candidates for use in early-stage medical diagnostics and further disease monitoring where low amounts of biomarkers need to be de......Silicon nanowire and nanoribbon biosensors have shown great promise in the detection of biomarkers at very low concentrations. Their high sensitivity makes them ideal candidates for use in early-stage medical diagnostics and further disease monitoring where low amounts of biomarkers need...... to be detected. However, in order to translate this technology from the bench to the bedside, a number of key issues need to be taken into consideration: Integrating nanobiosensors-based technology requires to overcome the difficult tradeoff between imperatives for high device reproducibilty and associated...... rising fabrication costs. Also the translation of nano-scale sensor technology into daily-use point-of-care devices requires acknowledgement of the end-user requirements, making device portability and human-interfacing a focus point in device development. Sample handling or purification for instance...

  10. Development of edgeless silicon pixel sensors on p-type substrate for the ATLAS high-luminosity upgrade

    Energy Technology Data Exchange (ETDEWEB)

    Calderini, G. [Laboratoire de Physique Nucléaire et des Hautes Energies (LPNHE), Paris (France); Dipartimento di Fisica E. Fermi, Universitá di Pisa, Pisa (Italy); Bagolini, A. [Fondazione Bruno Kessler, Centro per i Materiali e i Microsistemi (FBK-CMM), Povo di Trento (Italy); Bomben, M. [Laboratoire de Physique Nucléaire et des Hautes Energies (LPNHE), Paris (France); Boscardin, M. [Fondazione Bruno Kessler, Centro per i Materiali e i Microsistemi (FBK-CMM), Povo di Trento (Italy); Bosisio, L. [Università degli studi di Trieste and INFN-Trieste (Italy); Chauveau, J. [Laboratoire de Physique Nucléaire et des Hautes Energies (LPNHE), Paris (France); Giacomini, G. [Fondazione Bruno Kessler, Centro per i Materiali e i Microsistemi (FBK-CMM), Povo di Trento (Italy); La Rosa, A. [Section de Physique (DPNC), Universitè de Geneve, Geneve (Switzerland); Marchiori, G. [Laboratoire de Physique Nucléaire et des Hautes Energies (LPNHE), Paris (France); Zorzi, N. [Fondazione Bruno Kessler, Centro per i Materiali e i Microsistemi (FBK-CMM), Povo di Trento (Italy)

    2014-11-21

    In view of the LHC upgrade for the high luminosity phase (HL-LHC), the ATLAS experiment is planning to replace the inner detector with an all-silicon system. The n-in-p bulk technology represents a valid solution for the modules of most of the layers, given the significant radiation hardness of this option and the reduced cost. The large area necessary to instrument the outer layers will demand to tile the sensors, a solution for which the inefficient region at the border of each sensor needs to be reduced to the minimum size. This paper reports on a joint R and D project by the ATLAS LPNHE Paris group and FBK Trento on a novel n-in-p edgeless planar pixel design, based on the deep-trench process available at FBK.

  11. Studying the sensor response in the punch-through-protection region

    CERN Document Server

    Poley, Anne-luise; The ATLAS collaboration

    2017-01-01

    For the Phase-II Upgrade of the ATLAS detector, a new, all-silicon tracker will be constructed in order to cope with the increased track density and radiation level of the High Luminosity Large Hadron Collider. While silicon strip sensors are designed to minimise the fraction of dead material and maximise the active area of a sensor, concessions must be made to the requirements of operating a sensor in a particle physics detector. Sensor geometry features like the punch-through protection deviate from the standard sensor architecture and thereby affect the charge collection in that area. In order to study the signal collection of silicon strip sensors over their punch-through-protection area, ATLAS silicon strip sensors were scanned with a micro-focused X-ray beam at the Diamond Light Source. Due to the highly focused X-ray beam (2 × 3 µm) and the short average path length of an electron after interaction with an X-ray photon (≤ 2 μm), local signal collection in different sensor areas can be studied with...

  12. Energy efficiency enhancements for semiconductors, communications, sensors and software achieved in cool silicon cluster project

    Science.gov (United States)

    Ellinger, Frank; Mikolajick, Thomas; Fettweis, Gerhard; Hentschel, Dieter; Kolodinski, Sabine; Warnecke, Helmut; Reppe, Thomas; Tzschoppe, Christoph; Dohl, Jan; Carta, Corrado; Fritsche, David; Tretter, Gregor; Wiatr, Maciej; Detlef Kronholz, Stefan; Mikalo, Ricardo Pablo; Heinrich, Harald; Paulo, Robert; Wolf, Robert; Hübner, Johannes; Waltsgott, Johannes; Meißner, Klaus; Richter, Robert; Michler, Oliver; Bausinger, Markus; Mehlich, Heiko; Hahmann, Martin; Möller, Henning; Wiemer, Maik; Holland, Hans-Jürgen; Gärtner, Roberto; Schubert, Stefan; Richter, Alexander; Strobel, Axel; Fehske, Albrecht; Cech, Sebastian; Aßmann, Uwe; Pawlak, Andreas; Schröter, Michael; Finger, Wolfgang; Schumann, Stefan; Höppner, Sebastian; Walter, Dennis; Eisenreich, Holger; Schüffny, René

    2013-07-01

    An overview about the German cluster project Cool Silicon aiming at increasing the energy efficiency for semiconductors, communications, sensors and software is presented. Examples for achievements are: 1000 times reduced gate leakage in transistors using high-fc (HKMG) materials compared to conventional poly-gate (SiON) devices at the same technology node; 700 V transistors integrated in standard 0.35 μm CMOS; solar cell efficiencies above 19% at cars Contribution to the Topical Issue “International Semiconductor Conference Dresden-Grenoble - ISCDG 2012”, Edited by Gérard Ghibaudo, Francis Balestra and Simon Deleonibus.

  13. Natural and artificial spectral edges in exoplanets

    Science.gov (United States)

    Lingam, Manasvi; Loeb, Abraham

    2017-09-01

    Technological civilizations may rely upon large-scale photovoltaic arrays to harness energy from their host star. Photovoltaic materials, such as silicon, possess distinctive spectral features, including an 'artificial edge' that is characteristically shifted in wavelength shortwards of the 'red edge' of vegetation. Future observations of reflected light from exoplanets would be able to detect both natural and artificial edges photometrically, if a significant fraction of the planet's surface is covered by vegetation or photovoltaic arrays, respectively. The stellar energy thus tapped can be utilized for terraforming activities by transferring heat and light from the day side to the night side on tidally locked exoplanets, thereby producing detectable artefacts.

  14. Novel design and sensitivity analysis of displacement measurement system utilizing knife edge diffraction for nanopositioning stages.

    Science.gov (United States)

    Lee, ChaBum; Lee, Sun-Kyu; Tarbutton, Joshua A

    2014-09-01

    This paper presents a novel design and sensitivity analysis of a knife edge-based optical displacement sensor that can be embedded with nanopositioning stages. The measurement system consists of a laser, two knife edge locations, two photodetectors, and axillary optics components in a simple configuration. The knife edge is installed on the stage parallel to its moving direction and two separated laser beams are incident on knife edges. While the stage is in motion, the direct transverse and diffracted light at each knife edge is superposed producing interference at the detector. The interference is measured with two photodetectors in a differential amplification configuration. The performance of the proposed sensor was mathematically modeled, and the effect of the optical and mechanical parameters, wavelength, beam diameter, distances from laser to knife edge to photodetector, and knife edge topography, on sensor outputs was investigated to obtain a novel analytical method to predict linearity and sensitivity. From the model, all parameters except for the beam diameter have a significant influence on measurement range and sensitivity of the proposed sensing system. To validate the model, two types of knife edges with different edge topography were used for the experiment. By utilizing a shorter wavelength, smaller sensor distance and higher edge quality increased measurement sensitivity can be obtained. The model was experimentally validated and the results showed a good agreement with the theoretically estimated results. This sensor is expected to be easily implemented into nanopositioning stage applications at a low cost and mathematical model introduced here can be used for design and performance estimation of the knife edge-based sensor as a tool.

  15. Thermal flow micro sensors

    NARCIS (Netherlands)

    Elwenspoek, Michael Curt

    1999-01-01

    A review is given on sensors fabricated by silicon micromachining technology using the thermal domain for the measurement of fluid flow. Attention is paid especially to performance and geometry of the sensors. Three basic types of thermal flow sensors are discussed: anemometers, calorimetric flow

  16. Silicon Detectors for the sLHC - an Overview of Recent RD50 Results

    CERN Document Server

    Pellegrini, Giulio

    2009-01-01

    It is foreseen to significantly increase the luminosity of the Large Hadron Collider(LHC) at CERN around 2018 by upgrading the LHC towards the sLHC (Super-LHC). Due to the radiation damage to the silicon detectors used, the physics experiment will require new tracking detectors for sLHC operation. All-silicon central trackers are being studied in ATLAS, CMS and LHCb, with extremely radiation hard silicon sensors on the innermost layers. The radiation hardness of these new sensors must surpass the one of LHC detectors by roughly an order of magnitude. Within the CERN RD50 collaboration, a massive R&D programme is underway to develop silicon sensors with sufficient radiation tolerance. Among the R&D topics are the development of new sensor types like 3D silicon detectors designed for the extreme radiation levels of the sLHC. We will report on the recent results obtained by RD50 from tests of several detector technologies and silicon materials at radiation levels corresponding to SLHC fluences. Based on ...

  17. A novel sensor for two-degree-of-freedom motion measurement of linear nanopositioning stage using knife edge displacement sensing technique

    Science.gov (United States)

    Zolfaghari, Abolfazl; Jeon, Seongkyul; Stepanick, Christopher K.; Lee, ChaBum

    2017-06-01

    This paper presents a novel method for measuring two-degree-of-freedom (DOF) motion of flexure-based nanopositioning systems based on optical knife-edge sensing (OKES) technology, which utilizes the interference of two superimposed waves: a geometrical wave from the primary source of light and a boundary diffraction wave from the secondary source. This technique allows for two-DOF motion measurement of the linear and pitch motions of nanopositioning systems. Two capacitive sensors (CSs) are used for a baseline comparison with the proposed sensor by simultaneously measuring the motions of the nanopositioning system. The experimental results show that the proposed sensor closely agrees with the fundamental linear motion of the CS. However, the two-DOF OKES technology was shown to be approximately three times more sensitive to the pitch motion than the CS. The discrepancy in the two sensor outputs is discussed in terms of measuring principle, linearity, bandwidth, control effectiveness, and resolution.

  18. Silicon micromachined vibrating gyroscopes

    Science.gov (United States)

    Voss, Ralf

    1997-09-01

    This work gives an overview of silicon micromachined vibrating gyroscopes. Market perspectives and fields of application are pointed out. The advantage of using silicon micromachining is discussed and estimations of the desired performance, especially for automobiles are given. The general principle of vibrating gyroscopes is explained. Vibrating silicon gyroscopes can be divided into seven classes. for each class the characteristic principle is presented and examples are given. Finally a specific sensor, based on a tuning fork for automotive applications with a sensitivity of 250(mu) V/degrees is described in detail.

  19. Characterization of proton and neutron irradiated low resistivity p-on-n magnetic Czochralski ministrip sensors and diodes

    Energy Technology Data Exchange (ETDEWEB)

    Pacifico, Nicola, E-mail: nicola.pacifico@cern.ch [CERN, Geneva (Switzerland); Dolenc Kittelmann, Irena; Fahrer, Manuel; Moll, Michael [CERN, Geneva (Switzerland); Militaru, Otilia [UCL, Louvain (Belgium)

    2011-12-01

    Transient Current Technique (TCT) and Charge Collection Efficiency (CCE) measurements were performed on low resistivity (280{Omega}cm) n-bulk, p-readout magnetic Czochralski ministrip sensors and diodes. The detectors were irradiated with neutrons and 24 GeV/c protons up to a total NIEL equivalent fluence of 8 Multiplication-Sign 10{sup 15}/cm{sup 2}. The study was addressed to assess the radiation tolerance of the detectors up to fluences expected in the next generations of High Energy Physics experiments. The charge collection efficiency after irradiation was found to be much higher than for standard FZ silicon p-in-n sensors. The underlying physics of this remarkable result was investigated by performing Edge-TCT measurements on one of the neutron irradiated ministrip sensors to extract detailed informations about the field and efficiency profiles of the detector.

  20. High Sensitivity pH Sensor Based on Porous Silicon (PSi Extended Gate Field-Effect Transistor

    Directory of Open Access Journals (Sweden)

    Naif H. Al-Hardan

    2016-06-01

    Full Text Available In this study, porous silicon (PSi was prepared and tested as an extended gate field-effect transistor (EGFET for pH sensing. The prepared PSi has pore sizes in the range of 500 to 750 nm with a depth of approximately 42 µm. The results of testing PSi for hydrogen ion sensing in different pH buffer solutions reveal that the PSi has a sensitivity value of 66 mV/pH that is considered a super Nernstian value. The sensor considers stability to be in the pH range of 2 to 12. The hysteresis values of the prepared PSi sensor were approximately 8.2 and 10.5 mV in the low and high pH loop, respectively. The result of this study reveals a promising application of PSi in the field for detecting hydrogen ions in different solutions.

  1. Practical Use Technique of Sensor

    International Nuclear Information System (INIS)

    Hwang, Gyu Seop

    1985-11-01

    This book tells of practical use technology of sensor, introducing the recent trend of sensor for electronic industry, IC temperature sensor, radiation temperature sensor of surface acoustic wave, optical fiber temperature sensor, a polyelectrolyte film humidity sensor, semiconductor pressure sensor for industrial instrumentation, silicon integration pressure sensor, thick film humidity sensor and its application, photo sensor reflection type, and color sensor. It also deals with sensor for FA, sensor for a robot and sensor for the chemical industry.

  2. Practical Use Technique of Sensor

    Energy Technology Data Exchange (ETDEWEB)

    Hwang, Gyu Seop

    1985-11-15

    This book tells of practical use technology of sensor, introducing the recent trend of sensor for electronic industry, IC temperature sensor, radiation temperature sensor of surface acoustic wave, optical fiber temperature sensor, a polyelectrolyte film humidity sensor, semiconductor pressure sensor for industrial instrumentation, silicon integration pressure sensor, thick film humidity sensor and its application, photo sensor reflection type, and color sensor. It also deals with sensor for FA, sensor for a robot and sensor for the chemical industry.

  3. Twenty-fold plasmon-induced enhancement of radiative emission rate in silicon nanocrystals embedded in silicon dioxide

    International Nuclear Information System (INIS)

    Gardelis, S; Gianneta, V.; Nassiopoulou, A.G

    2016-01-01

    We report on a 20-fold enhancement of the integrated photoluminescence (PL) emission of silicon nanocrystals, embedded in a matrix of silicon dioxide, induced by excited surface plasmons from silver nanoparticles, which are located in the vicinity of the silicon nanocrystals and separated from them by a silicon dioxide layer of a few nanometers. The electric field enhancement provided by the excited surface plasmons increases the absorption cross section and the emission rate of the nearby silicon nanocrystals, resulting in the observed enhancement of the photoluminescence, mainly attributed to a 20-fold enhancement in the emission rate of the silicon nanocrystals. The observed remarkable improvement of the PL emission makes silicon nanocrystals very useful material for photonic, sensor and solar cell applications.

  4. Optical detection system for MEMS-type pressure sensor

    International Nuclear Information System (INIS)

    Sareło, K; Górecka-Drzazga, A; Dziuban, J A

    2015-01-01

    In this paper a special optical detection system designed for a MEMS-type (micro-electro-mechanical system) silicon pressure sensor is presented. The main part of the optical system—a detection unit with a perforated membrane—is bonded to the silicon sensor, and placed in a measuring system. An external light source illuminates the membrane of the pressure sensor. Owing to the light reflected from the deflected membrane sensor, the optical pattern consisting of light points is visible, and pressure can be estimated. The optical detection unit (20   ×   20   ×   20.4 mm 3 ) is fabricated using microengineering techniques. Its dimensions are adjusted to the dimensions of the pressure sensor (5   ×   5 mm 2 silicon membrane). Preliminary tests of the optical detection unit integrated with the silicon pressure sensor are carried out. For the membrane sensor from 15 to 60 µm thick, a repeatable detection of the differential pressure in the range of 0 to 280 kPa is achieved. The presented optical microsystem is especially suitable for the pressure measurements in a high radiation environment. (paper)

  5. Silicon sensors for the upgrades of the CMS pixel detector

    International Nuclear Information System (INIS)

    Centis Vignali, Matteo

    2015-12-01

    Hamburg will be 120 MHz/cm 2 . For this rate the modules' efficiency has been measured to be 99%. In view of the module production, the energy calibration procedure has been automated. The modules assigned to the Hamburg production center should be completed by the end of February 2016. For the phase II upgrade, thin silicon sensors with an active thickness of 100 μm irradiated with protons up to Φ eq =1.3.10 16 cm -2 have been characterized. The charge collection efficiency has been measured using pad diodes. Charge multiplication effects have been observed for both n- and p-bulk sensors. P-bulk strip sensors with an active thickness of 100 and 200 μm have been characterized with a beam test. The signal of these sensors lies between 4000 and 5000 e - after a fluence of 1.3.10 16 cm -2 . The 200 μm thick sensors require a higher bias voltage than the 100 μm thick sensors to reach this signal height. The threshold necessary to obtain 95% detection efficiency is found to be around 2000 e - for the 100 μm thick sensors.

  6. Silicon-to-silicon wafer bonding using evaporated glass

    DEFF Research Database (Denmark)

    Weichel, Steen; Reus, Roger De; Lindahl, M.

    1998-01-01

    Anodic bending of silicon to silicon 4-in. wafers using an electron-beam evaporated glass (Schott 8329) was performed successfully in air at temperatures ranging from 200 degrees C to 450 degrees C. The composition of the deposited glass is enriched in sodium as compared to the target material....... The roughness of the as-deposited films was below 5 nm and was found to be unchanged by annealing at 500 degrees C for 1 h in air. No change in the macroscopic edge profiles of the glass film was found as a function of annealing; however, small extrusions appear when annealing above 450 degrees C. Annealing...... of silicon/glass structures in air around 340 degrees C for 15 min leads to stress-free structures. Bonded wafer pairs, however, show no reduction in stress and always exhibit compressive stress. The bond yield is larger than 95% for bonding temperatures around 350 degrees C and is above 80% for bonding...

  7. ATLAS SCT - Progress on the Silicon Modules

    CERN Multimedia

    Tyndel, M.

    The ATLAS SCT consists of 4088 silicon modules. Each module is made up of 4 silicon sensors with 1536 readout strips. Individual strips are connected to FE amplifiers, discriminators and pipelines on the module, i.e. there are 12 radiation hard ASICs, each containing 128 channels on the module. The sensors and the ASICs were developed for the ATLAS experiment and production is proceeding smoothly with over half the components delivered. The components of a module - 4 silicon sensors, a Cu/polyimide hybrid and pitch adaptor, and 12 ASICs - need to be carefully and precisely assembled onto a carbon and ceramic framework, which supports the module and removes the heat. Eleven production clusters are preparing to carry this out over the next two years. An important milestone for the barrel modules has been passed with the first cluster (KEK) now in production (~40 modules produced). A second cluster UK-B has qualified by producing five modules within specification (see below) and is about to start production. T...

  8. Development of planar detectors with active edge

    International Nuclear Information System (INIS)

    Povoli, M.; Bagolini, A.; Boscardin, M.; Dalla Betta, G.-F.; Giacomini, G.; Vianello, E.; Zorzi, N.

    2011-01-01

    We report on the first batch of planar active edge sensors fabricated at Fondazione Bruno Kessler (Trento, Italy) on the way to the development of full 3D detectors with active edges. The main design and technological aspects are reported, along with selected results from the electrical characterization of detectors and test structures.

  9. Development of planar detectors with active edge

    Energy Technology Data Exchange (ETDEWEB)

    Povoli, M., E-mail: povoli@disi.unitn.it [Dipartimento di Ingegneria e Scienza dell' Informazione, Universita di Trento, Via Sommarive, 14, I-38123 Povo di Trento (Italy); INFN, Sezione di Padova (Gruppo Collegato di Trento) (Italy); Bagolini, A.; Boscardin, M. [Fondazione Bruno Kessler, Centro per i Materiali e i Microsistemi (FBK-CMM), Via Sommarive, 18, I-38123 Povo di Trento (Italy); Dalla Betta, G.-F. [Dipartimento di Ingegneria e Scienza dell' Informazione, Universita di Trento, Via Sommarive, 14, I-38123 Povo di Trento (Italy); INFN, Sezione di Padova (Gruppo Collegato di Trento) (Italy); Giacomini, G.; Vianello, E.; Zorzi, N. [Fondazione Bruno Kessler, Centro per i Materiali e i Microsistemi (FBK-CMM), Via Sommarive, 18, I-38123 Povo di Trento (Italy)

    2011-12-01

    We report on the first batch of planar active edge sensors fabricated at Fondazione Bruno Kessler (Trento, Italy) on the way to the development of full 3D detectors with active edges. The main design and technological aspects are reported, along with selected results from the electrical characterization of detectors and test structures.

  10. Development of Silicon Detectors for the High Luminosity LHC

    International Nuclear Information System (INIS)

    Eichhorn, Thomas Valentin

    2015-07-01

    The Large Hadron Collider (LHC) at CERN will be upgraded to a High Luminosity LHC in the year 2022, increasing the instantaneous luminosity by a factor of five. This will have major impacts on the experiments at the LHC, such as the Compact Muon Solenoid (CMS) experiment, and especially for their inner silicon tracking systems. Among other things, the silicon sensors used therein will be exposed to unprecedented levels of radiation damage, necessitating a replacement of the entire tracking detector. In order to maintain the excellent current performance, a new tracking detector has to be equipped with sensors of increased radiation hardness and higher granularity. The CMS experiment is undertaking an extensive R and D campaign in the search for the future silicon sensor technology baseline to be used in this upgrade. This thesis presents two methods suitable for use in this search: finite element TCAD simulations and test beam measurements. The simulations are focussed on the interstrip capacitance between sensor strips and are compared to measurements before and after the inclusion of radiation damage effects. A geometrical representation of the strip sensors used in the campaign has been found, establishing the predictive power of simulations. The test beam measurements make use of the high-precision pixel telescopes available at the DESY-II test beam facility. The performance of these telescopes has been assessed and their achievable pointing resolution has been found to be below 2 μm. Thin, epitaxial silicon is a candidate material for usage in radiation hard sensors for the future CMS tracking detector. Sample strip sensors of this material have been irradiated to fluences of up to 1.3 x 10 16 n eq /cm 2 with 800 MeV or 23 GeV protons. Test beam measurements with 5 GeV electrons have been performed to investigate the radiation hardness of epitaxial sensors using the pixel beam telescopes. The epitaxial device under test (DUT) has been integrated into the

  11. The CMS silicon tracker

    International Nuclear Information System (INIS)

    Focardi, E.; Albergo, S.; Angarano, M.; Azzi, P.; Babucci, E.; Bacchetta, N.; Bader, A.; Bagliesi, G.; Basti, A.; Biggeri, U.; Bilei, G.M.; Bisello, D.; Boemi, D.; Bosi, F.; Borrello, L.; Bozzi, C.; Braibant, S.; Breuker, H.; Bruzzi, M.; Buffini, A.; Busoni, S.; Candelori, A.; Caner, A.; Castaldi, R.; Castro, A.; Catacchini, E.; Checcucci, B; Ciampolini, P.; Civinini, C.; Creanza, D.; D'Alessandro, R.; Da Rold, M.; Demaria, N.; De Palma, M.; Dell'Orso, R.; Della Marina, R.; Dutta, S.; Eklund, C.; Feld, L.; Fiore, L.; French, M.; Freudenreich, K.; Frey, A.; Fuertjes, A.; Giassi, A.; Giorgi, M.; Giraldo, A.; Glessing, B.; Gu, W.H.; Hall, G.; Hammarstrom, R.; Hebbeker, T.; Honma, A.; Hrubec, J.; Huhtinen, M.; Kaminsky, A.; Karimaki, V.; Koenig, St.; Krammer, M.; Lariccia, P.; Lenzi, M.; Loreti, M.; Leubelsmeyer, K.; Lustermann, W.; Maettig, P.; Maggi, G.; Mannelli, M.; Mantovani, G.; Marchioro, A.; Mariotti, C.; Martignon, G.; Evoy, B.Mc; Meschini, M.; Messineo, A.; Migliore, E.; My, S.; Paccagnella, A.; Palla, F.; Pandoulas, D.; Papi, A.; Parrini, G.; Passeri, D.; Pieri, M.; Piperov, S.; Potenza, R.; Radicci, V.; Raffaelli, F.; Raymond, M.; Rizzo, F.; Santocchia, A.; Schmitt, B.; Selvaggi, G.; Servoli, L.; Sguazzoni, G.; Siedling, R.; Silvestris, L.; Starodumov, A.; Stavitski, I.; Stefanini, G.; Surrow, B.; Tempesta, P.; Tonelli, G.; Tricomi, A.; Tuuva, T.; Vannini, C.; Verdini, P.G.; Viertel, G.; Xie, Z.; Yahong, Li; Watts, S.; Wittmer, B.

    2000-01-01

    This paper describes the Silicon microstrip Tracker of the CMS experiment at LHC. It consists of a barrel part with 5 layers and two endcaps with 10 disks each. About 10 000 single-sided equivalent modules have to be built, each one carrying two daisy-chained silicon detectors and their front-end electronics. Back-to-back modules are used to read-out the radial coordinate. The tracker will be operated in an environment kept at a temperature of T=-10 deg. C to minimize the Si sensors radiation damage. Heavily irradiated detectors will be safely operated due to the high-voltage capability of the sensors. Full-size mechanical prototypes have been built to check the system aspects before starting the construction

  12. The new silicon strip detectors for the CMS tracker upgrade

    International Nuclear Information System (INIS)

    Dragicevic, M.

    2010-01-01

    The first introductory part of the thesis describes the concept of the CMS experiment. The tasks of the various detector systems and their technical implementations in CMS are explained. To facilitate the understanding of the basic principles of silicon strip sensors, the subsequent chapter discusses the fundamentals in semiconductor technology, with particular emphasis on silicon. The necessary process steps to manufacture strip sensors in a so-called planar process are described in detail. Furthermore, the effects of irradiation on silicon strip sensors are discussed. To conclude the introductory part of the thesis, the design of the silicon strip sensors of the CMS Tracker are described in detail. The choice of the substrate material and the complex geometry of the sensors are reviewed and the quality assurance procedures for the production of the sensors are presented. Furthermore the design of the detector modules are described. The main part of this thesis starts with a discussion on the demands on the tracker caused by the increase in luminosity which is proposed as an upgrade to the LHC accelerator (sLHC). This chapter motivates the work I have conducted and clarifies why the solutions proposed by myself are important contributions to the upgrade of the CMS tracker. The following chapters present the concepts that are necessary to operate the silicon strip sensors at sLHC luminosities and additional improvements to the construction and quality assurance of the sensors and the detector modules. The most important concepts and works presented in chapters 7 to 9 are: Development of a software framework to enable the flexible and quick design of test structures and sensors. Selecting a suitable sensor material which is sufficiently radiation hard. Design, implementation and production of a standard set of test structures to enable the quality assurance of such sensors and any future developments. Electrical characterisation of the test structures and analysis

  13. Quasimetallic silicon micromachined photonic crystals

    International Nuclear Information System (INIS)

    Temelkuran, B.; Bayindir, Mehmet; Ozbay, E.; Kavanaugh, J. P.; Sigalas, M. M.; Tuttle, G.

    2001-01-01

    We report on fabrication of a layer-by-layer photonic crystal using highly doped silicon wafers processed by semiconductor micromachining techniques. The crystals, built using (100) silicon wafers, resulted in an upper stop band edge at 100 GHz. The transmission and defect characteristics of these structures were found to be analogous to metallic photonic crystals. We also investigated the effect of doping concentration on the defect characteristics. The experimental results agree well with predictions of the transfer matrix method simulations

  14. Investigation of silicon sensors quality as a function of the ohmic side processing technology

    CERN Document Server

    Bloch, P; Golubkov, S A; Golutvin, I A; Egorov, N; Konjkov, K; Kozlov, Y; Peisert, Anna; Sidorov, A; Zamiatin, N I; Cheremuhin, A E

    2002-01-01

    Silicon sensors designed for the CMS Preshower detector must have a high breakdown voltage in order to be fully efficient after a strong irradiation. Studies made by several groups left bracket 1,2,3 right bracket have underlined the importance of the p**+ side geometrical parameters, such as the metal width and the number and spacing of guard rings. We have in addition investigated the effects related to the ohmic side processing and found that the breakdown voltage depends strongly on the depth of the effective "dead" n**+ layer. By increasing this thickness from mum to 2.5mum, the fraction of sensors with breakdown voltage higher than 500V increased from 22% to more than 80%. On the other hand, it was noticed that the starting surface quality of the wafer (double side polished or single side polished) does not affect the detectors parameters for a given production technology. The thick n**+-layer protects against initial wafer surface and defects caused by the technological treatment during the detector pr...

  15. Acoustic analog of monolayer graphene and edge states

    International Nuclear Information System (INIS)

    Zhong, Wei; Zhang, Xiangdong

    2011-01-01

    Acoustic analog of monolayer graphene has been designed by using silicone rubber spheres of honeycomb lattices embedded in water. The dispersion of the structure has been studied theoretically using the rigorous multiple-scattering method. The energy spectra with the Dirac point have been verified and zigzag edge states have been found in ribbons of the structure, which are analogous to the electronic ones in graphene nanoribbons. The guided modes along the zigzag edge excited by a point source have been numerically demonstrated. The open cavity and 'Z' type edge waveguide with 60 o corners have also been realized by using such edge states. -- Highlights: → Acoustic analog of monolayer graphene has been designed. → The energy spectra with the Dirac point have been verified. → The zigzag edge states have been found in ribbons of the structure. → The guided modes excited by a point source have been demonstrated. → The open cavity and 'Z' type edge waveguide have been realized.

  16. Subpixel edge localization with reduced uncertainty by violating the Nyquist criterion

    Science.gov (United States)

    Heidingsfelder, Philipp; Gao, Jun; Wang, Kun; Ott, Peter

    2014-12-01

    In this contribution, the extent to which the Nyquist criterion can be violated in optical imaging systems with a digital sensor, e.g., a digital microscope, is investigated. In detail, we analyze the subpixel uncertainty of the detected position of a step edge, the edge of a stripe with a varying width, and that of a periodic rectangular pattern for varying pixel pitches of the sensor, thus also in aliased conditions. The analysis includes the investigation of different algorithms of edge localization based on direct fitting or based on the derivative of the edge profile, such as the common centroid method. In addition to the systematic error of these algorithms, the influence of the photon noise (PN) is included in the investigation. A simplified closed form solution for the uncertainty of the edge position caused by the PN is derived. The presented results show that, in the vast majority of cases, the pixel pitch can exceed the Nyquist sampling distance by about 50% without an increase of the uncertainty of edge localization. This allows one to increase the field-of-view without increasing the resolution of the sensor and to decrease the size of the setup by reducing the magnification. Experimental results confirm the simulation results.

  17. Ultra-sensitive and selective detection of mercury ion (Hg2+) using free-standing silicon nanowire sensors

    Science.gov (United States)

    Jin, Yan; Gao, Anran; Jin, Qinghui; Li, Tie; Wang, Yuelin; Zhao, Jianlong

    2018-04-01

    In this paper, ultra-sensitive and highly selective Hg2+ detection in aqueous solutions was studied by free-standing silicon nanowire (SiNW) sensors. The all-around surface of SiNW arrays was functionalized with (3-Mercaptopropyl)trimethoxysilane serving as Hg2+ sensitive layer. Due to effective electrostatic control provided by the free-standing structure, a detection limit as low as 1 ppt was obtained. A linear relationship (R 2 = 0.9838) between log(CHg2+ ) and a device current change from 1 ppt to 5 ppm was observed. Furthermore, the developed SiNW sensor exhibited great selectivity for Hg2+ over other heavy metal ions, including Cd2+. Given the extraordinary ability for real-time Hg2+ detection, the small size and low cost of the SiNW device, it is expected to be a potential candidate in field detection of environmentally toxic mercury.

  18. Potential beneficial effects of electron-hole plasmas created in silicon sensors by XFEL-like high intensity pulses for detector development

    Energy Technology Data Exchange (ETDEWEB)

    Weiss, Joel T.; Becker, Julian; Shanks, Katherine S.; Philipp, Hugh T.; Tate, Mark W. [Laboratory of Atomic and Solid State Physics, Cornell University, Ithaca, NY 14853 (United States); Gruner, Sol M., E-mail: smg26@cornell.edu [Laboratory of Atomic and Solid State Physics, Cornell University, Ithaca, NY 14853 (United States); Cornell High Energy Synchrotron Source (CHESS), Cornell University, Ithaca, NY 14853 (United States)

    2016-07-27

    There is a compelling need for a high frame rate imaging detector with a wide dynamic range, from single x-rays/pixel/pulse to >10{sup 6} x-rays/pixel/pulse, that is capable of operating at both x-ray free electron laser (XFEL) and 3rd generation sources with sustained fluxes of > 10{sup 11} x-rays/pixel/s [1, 2, 3]. We propose to meet these requirements with the High Dynamic Range Pixel Array Detector (HDR-PAD) by (a) increasing the speed of charge removal strategies [4], (b) increasing integrator range by implementing adaptive gain [5], and (c) exploiting the extended charge collection times of electron-hole pair plasma clouds that form when a sufficiently large number of x-rays are absorbed in a detector sensor in a short period of time [6]. We have developed a measurement platform similar to the one used in [6] to study the effects of high electron-hole densities in silicon sensors using optical lasers to emulate the conditions found at XFELs. Characterizations of the employed tunable wavelength laser with picosecond pulse duration have shown Gaussian focal spots sizes of 6 ± 1 µm rms over the relevant spectrum and 2 to 3 orders of magnitude increase in available intensity compared to previous measurements presented in [6]. Results from measurements on a typical pixelated silicon diode intended for use with the HDR-PAD (150 µm pixel size, 500 µm thick sensor) are presented.

  19. 3D characterisation of tool wear whilst diamond turning silicon

    OpenAIRE

    Durazo-Cardenas, Isidro Sergio; Shore, Paul; Luo, X.; Jacklin, T.; Impey, S. A.; Cox, A.

    2006-01-01

    Nanometrically smooth infrared silicon optics can be manufactured by the diamond turning process. Due to its relatively low density, silicon is an ideal optical material for weight sensitive infrared (IR) applications. However, rapid diamond tool edge degradation and the effect on the achieved surface have prevented significant exploitation. With the aim of developing a process model to optimise the diamond turning of silicon optics, a series of experimental trials were devi...

  20. Optical bio-chemical sensors on SNOW ring resonators

    Science.gov (United States)

    Khorasaninejad, Mohammadreza; Clarke, Nigel; Anantram, M. P.; Singh Saini, Simarjeet

    2011-08-01

    In this paper, we propose and analyze novel ring resonator based bio-chemical sensors on silicon nanowire optical waveguide (SNOW) and show that the sensitivity of the sensors can be increased by an order of magnitude as compared to silicon-on-insulator based ring resonators while maintaining high index contrast and compact devices. The core of the waveguide is hollow and allows for introduction of biomaterial in the center of the mode, thereby increasing the sensitivity of detection. A sensitivity of 243 nm/refractive index unit (RIU) is achieved for a change in bulk refractive index. For surface attachment, the sensor is able to detect monolayer attachments as small as 1 Å on the surface of the silicon nanowires.

  1. Multi-Absorber Transition-Edge Sensors for X-Ray Astronomy Applications

    Science.gov (United States)

    Smith, S. J.; Adams, J. S.; Bandler, S. R.; Busch, S. E.; Chervenak, J. A.; Eckart, M. E.; Ewin, A. J.; Finkbeiner, F. M.; Kelley, R. L.; Kelly, D. P.; hide

    2012-01-01

    We are developing multi-absorber Transition-Edge Sensors (TESs) for applications in x-ray astronomy. These position-sensitive devices consist of multiple x-ray absorbers each with a different thermal coupling to a single readout TES. Heat diffusion between the absorbers and the TES gives rise to a characteristic pulse shape corresponding to each absorber element and enables position discrimination. The development of these detectors is motivated by a desire to maximize focal plane arrays with the fewest number of readout channels. In this contribution we report on the first results from devices consisting of nine) 65 X 65 sq. microns Au x-ray absorbers) 5 microns thick. These are coupled to a single 35 X 35 sq. microns Mo/Au bilayer TES. These devices have demonstrated full-width-half-maximum (FWHM) energy resolution of 2.1 eV at 1.5 keV) 2.5 eV at 5.9 keV and 3.3 eV at 8 keV. This is coupled with position discrimination from pulse shape over the same energy range. We use a finite-element model to reproduce the measured pulse shapes and investigate the detector non-linearity with energy) which impacts on the devices position sensitivity and energy resolution.

  2. Optimization of Transition Edge Sensor Arrays for Cosmic Microwave Background Observations With the South Pole Telescope

    Energy Technology Data Exchange (ETDEWEB)

    Ding, Junjia; Ade, P. A. R.; Anderson, A. J.; Avva, J.; Ahmed, Z.; Arnold, K.; Austermann, J. E.; Bender, A. N.; Benson, B. A.; Bleem, L. E.; Byrum, K.; Carlstrom, J. E.; Carter, F. W.; Chang, C. L.; Cho, H. M.; Cliche, J. F.; Cukierman, A.; Czaplewski, D.; Divan, R.; de Haan, T.; Dobbs, M. A.; Dutcher, D.; Everett, W.; Gilbert, A.; Gannon, R.; Guyser, R.; Halverson, N. W.; Harrington, N. L.; Hattori, K.; Henning, J. W.; Hilton, G. C.; Holzapfel, W. L.; Hubmayr, J.; Huang, N.; Irwin, K. D.; Jeong, O.; Khaire, T.; Kubik, D.; Kuo, C. L.; Lee, A. T.; Leitch, E. M.; Meyer, S. S.; Miller, C. S.; Montgomery, J.; Nadolski, A.; Natoli, T.; Nguyen, H.; Novosad, V.; Padin, S.; Pan, Z.; Pearson, J.; Posada, C. M.; Rahlin, A.; Reichardt, C. L.; Ruhl, J. E.; Saliwanchik, B. R.; Sayre, J. T.; Shariff, J. A.; Shirley, I.; Shirokoff, E.; Smecher, G.; Sobrin, J.; Stan, L.; Stark, A. A.; Story, K.; Suzuki, A.; Tang, Q. Y.; Thakur, R. B.; Thompson, K. L.; Tucker, C.; Vanderlinde, K.; Vieira, J. D.; Wang, G.; Whitehorn, N.; Wu, W. L. K.; Yefremenko, V.; Yoon, K. W.

    2017-06-01

    In this paper, we describe the optimization of transition-edge-sensor (TES) detector arrays for the third-generation camera for the South PoleTelescope. The camera, which contains similar to 16 000 detectors, will make high-angular-resolution maps of the temperature and polarization of the cosmic microwave background. Our key results are scatter in the transition temperature of Ti/Au TESs is reduced by fabricating the TESs on a thin Ti(5 nm)/Au(5 nm) buffer layer and the thermal conductivity of the legs that support our detector islands is dominated by the SiOx dielectric in the microstrip transmission lines that run along the legs.

  3. Design and Optimization of Multi-Pixel Transition-Edge Sensors for X-Ray Astronomy Applications

    Science.gov (United States)

    Smith, Stephen J.; Adams, Joseph S.; Bandler, Simon R.; Chervenak, James A.; Datesman, Aaron Michael; Eckart, Megan E.; Ewin, Audrey J.; Finkbeiner, Fred M.; Kelley, Richard L.; Kilbourne, Caroline A.; hide

    2017-01-01

    Multi-pixel transition-edge sensors (TESs), commonly referred to as 'hydras', are a type of position sensitive micro-calorimeter that enables very large format arrays to be designed without commensurate increase in the number of readout channels and associated wiring. In the hydra design, a single TES is coupled to discrete absorbers via varied thermal links. The links act as low pass thermal filters that are tuned to give a different characteristic pulse shape for x-ray photons absorbed in each of the hydra sub pixels. In this contribution we report on the experimental results from hydras consisting of up to 20 pixels per TES. We discuss the design trade-offs between energy resolution, position discrimination and number of pixels and investigate future design optimizations specifically targeted at meeting the readout technology considered for Lynx.

  4. Large Size High Performance Transparent Amorphous Silicon Sensors for Laser Beam Position Detection and Monitoring

    Energy Technology Data Exchange (ETDEWEB)

    Calderon, A.; Martinez Rivero, C.; Matorras, F.; Rodrigo, T.; Sobron, M.; Vila, I.; Virto; Alberdi, J.; Arce, P.; Barcala, J. M.; Calvo, E.; Ferrando, A.; Josa, M. I.; Luque, J. M.; Molinero, A.; Navarrete, J.; Oller, J. C.; Kohler, C.; Lutz, B.; Schubert, M. B.

    2006-09-04

    We present the measured performance of a new generation of semitransparente amorphous silicon position detectors. They have a large sensitive area (30 x 30 mm2) and show good properties such as a high response (about 20 mA/W), an intinsic position resolution better than 3 m, a spatial point reconstruction precision better than 10 m, deflection angles smaller than 10 rad and a transmission power in the visible and NIR higher than 70%. In addition, multipoint alignment monitoring, using up to five sensors lined along a light path of about 5 meters, can be achieved with a resolution better than 20m. (Author)

  5. Large Size High Performance Transparent Amorphous Silicon Sensors for Laser Beam Position Detection and Monitoring

    International Nuclear Information System (INIS)

    Calderon, A.; Martinez Rivero, C.; Matorras, F.; Rodrigo, T.; Sobron, M.; Vila, I.; Virto; Alberdi, J.; Arce, P.; Barcala, J. M.; Calvo, E.; Ferrando, A.; Josa, M. I.; Luque, J. M.; Molinero, A.; Navarrete, J.; Oller, J. C.; Kohler, C.; Lutz, B.; Schubert, M. B.

    2006-01-01

    We present the measured performance of a new generation of semitransparente amorphous silicon position detectors. They have a large sensitive area (30 x 30 mm2) and show good properties such as a high response (about 20 mA/W), an intinsic position resolution better than 3 m, a spatial point reconstruction precision better than 10 m, deflection angles smaller than 10 rad and a transmission power in the visible and NIR higher than 70%. In addition, multipoint alignment monitoring, using up to five sensors lined along a light path of about 5 meters, can be achieved with a resolution better than 20m. (Author)

  6. Development of active edge pixel sensors and four-side buttable modules using vertical integration technologies

    Energy Technology Data Exchange (ETDEWEB)

    Macchiolo, A., E-mail: Anna.Macchiolo@mpp.mpg.de [Max-Planck-Institut for Physics, Föhringer Ring 6, D-80805 Munich (Germany); Andricek, L. [Semiconductor Laboratory of the Max-Planck-Society, Otto Hahn Ring 6, D-81739 Munich (Germany); Moser, H.-G.; Nisius, R. [Max-Planck-Institut for Physics, Föhringer Ring 6, D-80805 Munich (Germany); Richter, R.H. [Semiconductor Laboratory of the Max-Planck-Society, Otto Hahn Ring 6, D-81739 Munich (Germany); Terzo, S.; Weigell, P. [Max-Planck-Institut for Physics, Föhringer Ring 6, D-80805 Munich (Germany)

    2014-11-21

    We present an R and D activity focused on the development of novel modules for the upgrade of the ATLAS pixel system at the High Luminosity LHC (HL-LHC). The modules consist of n-in-p pixel sensors, 100 or 200 μm thick, produced at VTT (Finland) with an active edge technology, which considerably reduces the dead area at the periphery of the device. The sensors are interconnected with solder bump-bonding to the ATLAS FE-I3 and FE-I4 read-out chips, and characterised with radioactive sources and beam tests at the CERN-SPS and DESY. The results of these measurements will be discussed for devices before and after irradiation up to a fluence of 5×10{sub 15}n{sub eq}/cm{sup 2}. We will also report on the R and D activity to obtain Inter Chip Vias (ICVs) on the ATLAS read-out chip in collaboration with the Fraunhofer Institute EMFT. This step is meant to prove the feasibility of the signal transport to the newly created readout pads on the backside of the chips allowing for four side buttable devices without the presently used cantilever for wire bonding. The read-out chips with ICVs will be interconnected to thin pixel sensors, 75 μm and 150 μm thick, with the Solid Liquid Interdiffusion (SLID) technology, which is an alternative to the standard solder bump-bonding.

  7. Characterization of silicon microstrip sensors, front-end electronics, and prototype tracking detectors for the CBM experiment at FAIR

    International Nuclear Information System (INIS)

    Sorokin, Iurii

    2013-01-01

    The Compressed Baryonic Matter (CBM) experiment will explore the phase diagram of strongly interacting matter in the region of high net baryonic densities. The matter at the extreme conditions will be studied in collisions of a heavy ion beam with a fixed heavy element target. The present work is devoted to the development of the main component of the CBM experiment - the Silicon Tracking System (STS). The STS has to enable reconstruction of up to 1000 charged particle tracks per nucleus-nucleus interaction at the rate of up to 10 MHz, provide a momentum resolution Δp/p of 1 %, and withstand the radiation load of up to 10 14 n eq /cm 2 (n eq -neutron equivalent). The STS will be based on double-sided silicon microstrip sensors, that will be arranged in 8 planes in the aperture of the dipole magnet. Selftriggering readout electronics will be located on the periphery of the detecting planes, and connected to the sensors with low mass microcables. In the stage of R and D, as well as in the stages of pre-series and series production, characterization of the sensors, of the front-end electronics, and of the complete detector modules has to be performed. In the present work the required techniques were developed, and the performance of the latest detector prototypes was evaluated. A particular attention is paid to evaluation of the signal amplitude, as it is one of the most important detector characteristics. Techniques for measuring the passive electrical characteristics of the sensors were developed. These include: the coupling and the interstrip capacitances, the interstrip resistance, the bias resistance, the strip leakage current, the bulk capacitance, and the bulk leakage current. The techniques will be applied for the quality assurance of the sensors during the pre-series and the series production. Extensive characterization of the prototype readout chip, n-XYTER, was performed. The register settings were optimized, and the dependence of the amplitude response on

  8. Energy Dependence of Proton Radiation Damage in Si-Sensors

    CERN Document Server

    AUTHOR|(CDS)2084399; Neubüser, C.

    2014-01-01

    Irradiation experiments on silicon sensors are used to mimic the radiation environment at collider experiments with the aim to forecast the change of the electrical properties of a detector with irradiation. Measurements on irradiated sensors are invaluable in choosing a material well suited for a silicon tracking detector. This is especially true for the upgraded detectors to be used in the high-luminosity phase of the LHC (HL-LHC), where silicon sensors as currently used would suffer severe loss in signal from irradiation with charged and neutral hadrons.\\\\ The CMS Tracker Collaboration has initiated irradiation studies with protons with energies ranging from 23 MeV to 23 GeV. They are often used instead of charged hadrons, their radiation induced damage to the silicon being rather similar. However, in oxygen rich silicon, NIEL violation concerning the full depletion voltage has been observed.\\\\ In this paper results from investigations on bulk defects compared to the change of the electrical properties of ...

  9. Properties of tree rings in LSST sensors

    International Nuclear Information System (INIS)

    Park, H.Y.; Tsybychev, D.; Nomerotski, A.

    2017-01-01

    Images of uniformly illuminated sensors for the Large Synoptic Survey Telescope have circular periodic patterns with an appearance similar to tree rings. These patterns are caused by circularly symmetric variations of the dopant concentration in the monocrystal silicon boule induced by the manufacturing process. Non-uniform charge density results in the parasitic electric field inside the silicon sensor, which may distort shapes of astronomical sources. In this study we analyzed data from fifteen LSST sensors produced by ITL to determine the main parameters of the tree rings: amplitude and period, and also variability across the sensors tested at Brookhaven National Laboratory. Tree ring pattern has a weak dependence on the wavelength. However the ring amplitude gets smaller as wavelength gets longer, since longer wavelengths penetrate deeper into the silicon. Tree ring amplitude gets larger as it gets closer to the outer part of the wafer, from 0.1 to 1.0%, indicating that the resistivity variation is larger for larger radii.

  10. An All Silicon Feedhorn-Coupled Focal Plane for Cosmic Microwave Background Polarimetry

    Science.gov (United States)

    Hubmayr, J.; Appel, J. W.; Austermann, J. E.; Beall, J. A.; Becker, D.; Benson, B. A.; Bleem, L. E.; Carlstrom, J. E.; Chang, C. L.; Cho, H. M.; hide

    2011-01-01

    Upcoming experiments aim to produce high fidelity polarization maps of the cosmic microwave background. To achieve the required sensitivity, we are developing monolithic, feedhorn-coupled transition edge sensor polarimeter arrays operating at 150 GHz. We describe this focal plane architecture and the current status of this technology, focusing on single-pixel polarimeters being deployed on the Atacama B-mode Search (ABS) and an 84-pixel demonstration feedhorn array backed by four 10-pixel polarimeter arrays. The feedhorn array exhibits symmetric beams, cross-polar response less than -23 dB and excellent uniformity across the array. Monolithic polarimeter arrays, including arrays of silicon feedhorns, will be used in the Atacama Cosmology Telescope Polarimeter (ACTPol) and the South Pole Telescope Polarimeter (SPTpol) and have been proposed for upcoming balloon-borne instruments.

  11. Silicon Detectors-Tools for Discovery in Particle Physics

    International Nuclear Information System (INIS)

    Krammer, Manfred

    2009-01-01

    Since the first application of Silicon strip detectors in high energy physics in the early 1980ies these detectors have enabled the experiments to perform new challenging measurements. With these devices it became possible to determine the decay lengths of heavy quarks, for example in the fixed target experiment NA11 at CERN. In this experiment Silicon tracking detectors were used for the identification of particles containing a c-quark. Later on, the experiments at the Large Electron Positron collider at CERN used already larger and sophisticated assemblies of Silicon detectors to identify and study particles containing the b-quark. A very important contribution to the discovery of the last of the six quarks, the top quark, has been made by even larger Silicon vertex detectors inside the experiments CDF and D0 at Fermilab. Nowadays a mature detector technology, the use of Silicon detectors is no longer restricted to the vertex regions of collider experiments. The two multipurpose experiments ATLAS and CMS at the Large Hadron Collider at CERN contain large tracking detectors made of Silicon. The largest is the CMS Inner Tracker consisting of 200 m 2 of Silicon sensor area. These detectors will be very important for a possible discovery of the Higgs boson or of Super Symmetric particles. This paper explains the first applications of Silicon sensors in particle physics and describes the continuous development of this technology up to the construction of the state of the art Silicon detector of CMS.

  12. Studies of radiation damage in silicon sensors and a measurement of the inelastic proton--proton cross-section at 13 TeV

    CERN Document Server

    AUTHOR|(INSPIRE)INSPIRE-00360674; Ward, Patricia

    This thesis presents studies of radiation damage in silicon sensors for the new ATLAS tracker at the high-luminosity LHC, calibrations of the LHC luminosity scale, and a measurement of the proton--proton inelastic cross-section at 13 TeV~with ATLAS data. The studies of radiation damage are performed by comparing sensor performance before and after irradiation, and include annealing studies. The measured quantities include: leakage current, depletion depth, inter-strip isolation, and charge collection. Surface and bulk damage is studied by comparing the results of sensors irradiated with protons and neutrons. The observed degradation of performance suggests the current sensor design will endure the radiation damage expected over the lifetime of the experiment at the high-luminosity LHC. The luminosity is calibrated for the proton--proton, proton--lead, and lead--lead collisions delivered by the LHC during 2013 and 2015. The absolute luminosity scale is derived with the van der Meer method. The systematic unc...

  13. Packaging Technologies for High Temperature Electronics and Sensors

    Science.gov (United States)

    Chen, Liangyu; Hunter, Gary W.; Neudeck, Philip G.; Beheim, Glenn M.; Spry, David J.; Meredith, Roger D.

    2013-01-01

    This paper reviews ceramic substrates and thick-film metallization based packaging technologies in development for 500degC silicon carbide (SiC) electronics and sensors. Prototype high temperature ceramic chip-level packages and printed circuit boards (PCBs) based on ceramic substrates of aluminum oxide (Al2O3) and aluminum nitride (AlN) have been designed and fabricated. These ceramic substrate-based chiplevel packages with gold (Au) thick-film metallization have been electrically characterized at temperatures up to 550degC. A 96% alumina based edge connector for a PCB level subsystem interconnection has also been demonstrated recently. The 96% alumina packaging system composed of chip-level packages and PCBs has been tested with high temperature SiC devices at 500degC for over 10,000 hours. In addition to tests in a laboratory environment, a SiC JFET with a packaging system composed of a 96% alumina chip-level package and an alumina printed circuit board mounted on a data acquisition circuit board was launched as a part of the MISSE-7 suite to the International Space Station via a Shuttle mission. This packaged SiC transistor was successfully tested in orbit for eighteen months. A spark-plug type sensor package designed for high temperature SiC capacitive pressure sensors was developed. This sensor package combines the high temperature interconnection system with a commercial high temperature high pressure stainless steel seal gland (electrical feed-through). Test results of a packaged high temperature capacitive pressure sensor at 500degC are also discussed. In addition to the pressure sensor package, efforts for packaging high temperature SiC diode-based gas chemical sensors are in process.

  14. Assembly and validation of the SSD silicon microstrip detector of ALICE

    NARCIS (Netherlands)

    de Haas, A.P.; Kuijer, P.G.; Nooren, G.J.L.; Oskamp, C.J.; Sokolov, A.N.; van den Brink, A.

    2006-01-01

    The Silicon Strip Detector (SSD) forms the two outermost layers of the Inner Tracking System (ITS) of ALICE. The SSD detector consists of 1698 double-sided silicon microstrip modules. The electrical connection between silicon sensor and front-end electronics is made via TAB-bonded

  15. 3D-FBK Pixel sensors: recent beam tests results with irradiated devices

    CERN Document Server

    Micelli, A; Sandaker, H; Stugu, B; Barbero, M; Hugging, F; Karagounis, M; Kostyukhin, V; Kruger, H; Tsung, J W; Wermes, N; Capua, M; Fazio, S; Mastroberardino, A; Susinno, G; Gallrapp, C; Di Girolamo, B; Dobos, D; La Rosa, A; Pernegger, H; Roe, S; Slavicek, T; Pospisil, S; Jakobs, K; Kohler, M; Parzefall, U; Darbo, G; Gariano, G; Gemme, C; Rovani, A; Ruscino, E; Butter, C; Bates, R; Oshea, V; Parker, S; Cavalli-Sforza, M; Grinstein, S; Korokolov, I; Pradilla, C; Einsweiler, K; Garcia-Sciveres, M; Borri, M; Da Via, C; Freestone, J; Kolya, S; Lai, C H; Nellist, C; Pater, J; Thompson, R; Watts, S J; Hoeferkamp, M; Seidel, S; Bolle, E; Gjersdal, H; Sjobaek, K N; Stapnes, S; Rohne, O; Su, D; Young, C; Hansson, P; Grenier, P; Hasi, J; Kenney, C; Kocian, M; Jackson, P; Silverstein, D; Davetak, H; DeWilde, B; Tsybychev, D; Dalla Betta, G F; Gabos, P; Povoli, M; Cobal, M; Giordani, M P; Selmi, L; Cristofoli, A; Esseni, D; Palestri, P; Fleta, C; Lozano, M; Pellegrini, G; Boscardin, M; Bagolini, A; Piemonte, C; Ronchin, S; Zorzi, N; Hansen, T E; Hansen, T; Kok, A; Lietaer, N; Kalliopuska, J; Oja, A

    2011-01-01

    The Pixel detector is the innermost part of the ATLAS experiment tracking device at the Large Hadron Collider (LHC), and plays a key role in the reconstruction of the primary and secondary vertices of short-lived particles. To cope with the high level of radiation produced during the collider operation, it is planned to add to the present three layers of silicon pixel sensors which constitute the Pixel Detector, an additional layer (Insertable B-Layer, or IBL) of sensors. 3D silicon sensors are one of the technologies which are under study for the IBL. 3D silicon technology is an innovative combination of very-large-scale integration (VLSI) and Micro-Electro-Mechanical-Systems (MEMS) where electrodes are fabricated inside the silicon bulk instead of being implanted on the wafer surfaces. 3D sensors, with electrodes fully or partially penetrating the silicon substrate, are currently fabricated at different processing facilities in Europe and USA. This paper reports on the 2010 June beam test results for irradi...

  16. Silicon Nanowire Field-effect Chemical Sensor

    NARCIS (Netherlands)

    Chen, S.

    2011-01-01

    This thesis describes the work that has been done on the project “Design and optimization of silicon nanowire for chemical sensing‿, including Si-NW fabrication, electrical/electrochemical modeling, the application as ISFET, and the build-up of Si- NW/LOC system for automatic sample delivery. A

  17. Study of gluing and wire bonding for the Belle II Silicon Vertex Detector

    International Nuclear Information System (INIS)

    Kang, K.H.; Hara, K.; Higuchi, T.; Hyun, H.J.; Jeon, H.B.; Joo, C.W.; Kah, D.H.; Kim, H.J.; Mibe, T.; Onuki, Y.; Park, H.; Rao, K.K.; Sato, N.; Shimizu, N.; Tanida, K.; Tsuboyama, T.; Uozumi, S.

    2014-01-01

    This paper describes an investigation into gluing and wire bonding for assembling the Silicon Vertex Detector (SVD) for the Belle II experiment at KEK in Japan. Optimizing the gluing of the silicon microstrip sensors, the support frame, and the readout flex cables is important for achieving the required mechanical precision. The wire bonding between the sensors and the readout electronic chips also needs special care to maximize the physics capability of the SVD. The silicon sensors and signal fan out flex circuits (pitch adapters) are glued and connected using wire bonding. We determine that gluing quality is important for achieving good bonding efficiency. The standard deviation in the glue thickness for the best result is measured to be 3.11 μm. Optimal machine parameters for wire bonding are determined to be 70 mW power, 20 gf force, and 20 ms for the pitch adapter and 60 mW power, 20 gf force, and 20 ms for the silicon strip sensors; these parameters provide a pull force of (10.92±0.72) gf. With these settings, 75% of the pitch adapters and 25% of the strip sensors experience the neck-broken type of break

  18. Update on scribe–cleave–passivate (SCP) slim edge technology for silicon sensors: Automated processing and radiation resistance

    Energy Technology Data Exchange (ETDEWEB)

    Fadeyev, V., E-mail: fadeyev@ucsc.edu [Santa Cruz Institute for Particle Physics, University of California, Santa Cruz, CA 95064 (United States); Ely, S.; Galloway, Z.; Ngo, J.; Parker, C.; Sadrozinski, H.F.-W. [Santa Cruz Institute for Particle Physics, University of California, Santa Cruz, CA 95064 (United States); Christophersen, M.; Phlips, B.F. [U.S. Naval Research Laboratory, Code 7654, 4555 Overlook Avenue, Southwest Washington, DC 20375 (United States); Pellegrini, G.; Rafi, J.M.; Quirion, D. [Instituto de Microelectrónica de Barcelona, IMB-CNM-CSIC, Bellaterra, Barcelona (Spain); Dalla Betta, G.-F. [INFN and University of Trento, Via Sommarive, 14, 38123 Povo di Trento (Italy); Boscardin, M. [Fondazione Bruno Kessler, Via Sommarive, 18, 38123 Povo di Trento (Italy); Casse, G. [Department of Physics, University of Liverpool, O. Lodge Laboratory, Oxford Street, Liverpool L69 7ZE (United Kingdom); Gorelov, I.; Hoeferkamp, M.; Metcalfe, J.; Seidel, S. [Department of Physics and Astronomy, University of New Mexico, MSC 07 4220, 1919 Lomas Boulevard NE, Albuquerque, NM 87131 (United States); Gaubas, E.; Ceponis, T. [Institute of Applied Research, Vilnius University, Sauletekio 9, LT-10222 Vilnius (Lithuania); and others

    2014-11-21

    We pursue scribe–cleave–passivate (SCP) technology for making “slim edge” sensors. The goal is to reduce the inactive region at the periphery of the devices while maintaining their performance. In this paper we report on two aspects of the current efforts. The first one involves fabrication options for mass production. We describe the automated cleaving tests and a simplified version of SCP post-processing of n-type devices. Another aspect is the radiation resistance of the passivation. We report on the radiation tests of n- and p-type devices with protons and neutrons.

  19. Development of real time personal neutron dosimeter with two silicon detectors

    Energy Technology Data Exchange (ETDEWEB)

    Nakamura, T.; Tsujimura, N. [Tohoku Univ., Cyclotron and Radioisotope Center, Aoba, Aramaki, Aoba-ku (Japan); Yamano, T. [Tokyo Factory, Fuji Electric Co. Ltd., Tokyo (Japan)

    1992-07-01

    We developed a real time personal neutron dosimeter by using two types of silicon p-n junction detectors, thermal neutron sensor and fast neutron sensor. The thermal neutron sensor which is {sup 10}B doped n-type silicon with a polyethylene radiator mainly counts neutrons of energy front thermal to I MeV, and the fast neutron sensor which is p-type silicon with a polyethylene radiator is sensitive to neutrons above I MeV. The neutron sensitivity measurements revealed that the dosimeter has a rather flat response for dose equivalent from thermal to 15 MeV, excluding a drop from 50 keV to I MeV. In order to get conversion factor from counts to dose equivalent as accurately as possible, we performed the field test of the dosimeter calibration in several neutron-generating fields. By introducing the two-group dose estimation method, this dosimeter can give the neutron dose equivalent within about 50% errors. (author)

  20. Uncooled tunneling infrared sensor

    Science.gov (United States)

    Kenny, Thomas W. (Inventor); Kaiser, William J. (Inventor); Podosek, Judith A. (Inventor); Vote, Erika C. (Inventor); Muller, Richard E. (Inventor); Maker, Paul D. (Inventor)

    1995-01-01

    An uncooled infrared tunneling sensor in which the only moving part is a diaphragm which is deflected into contact with a micromachined silicon tip electrode prepared by a novel lithographic process. Similarly prepared deflection electrodes employ electrostatic force to control the deflection of a silicon nitride, flat diaphragm membrane. The diaphragm exhibits a high resonant frequency which reduces the sensor's sensitivity to vibration. A high bandwidth feedback circuit controls the tunneling current by adjusting the deflection voltage to maintain a constant deflection of the membrane. The resulting infrared sensor can be miniaturized to pixel dimensions smaller than 100 .mu.m. An alternative embodiment is implemented using a corrugated membrane to permit large deflection without complicated clamping and high deflection voltages. The alternative embodiment also employs a pinhole aperture in a membrane to accommodate environmental temperature variation and a sealed chamber to eliminate environmental contamination of the tunneling electrodes and undesireable accoustic coupling to the sensor.

  1. The upgrade of the ALICE Inner Tracking System - Status of the R&D; on monolithic silicon pixel sensors

    CERN Document Server

    Van Hoorne, Jacobus Willem

    2014-01-01

    s a major part of its upgrade plans, the ALICE experiment schedules the installation of a novel Inner Tracking System (ITS) during the Long Shutdown 2 (LS2) of the LHC in 2018/19. It will replace the present silicon tracker with seven layers of Monolithic Active Pixel Sensors (MAPS) and significantly improve the detector performance in terms of tracking and rate capabilities. The choice of technology has been guided by the tight requirements on the material budget of 0 : 3 % X = X 0 /layer for the three innermost layers and backed by the significant progress in the field of MAPS in recent years. The pixel chips are manufactured in the TowerJazz 180 nm CMOS imaging sensor process on wafers with a high resistivity epitaxial layer. Within the ongoing R&D; phase, several sensor chip prototypes have been developed and produced on different epitaxial layer thicknesses and resistivities. These chips are being characterized for their performance before and after irradiation using source tests, test beam and measu...

  2. Production and characterisation of SLID interconnected n-in-p pixel modules with 75 μm thin silicon sensors

    Energy Technology Data Exchange (ETDEWEB)

    Andricek, L. [Halbleiterlabor der Max-Planck-Gesellschaft, Otto Hahn Ring 6, D-81739 München (Germany); Beimforde, M.; Macchiolo, A.; Moser, H.-G. [Max-Planck-Institut für Physik (Werner-Heisenberg-Institut), Föhringer Ring 6, D-80805 München (Germany); Nisius, R., E-mail: Richard.Nisius@mpp.mpg.de [Max-Planck-Institut für Physik (Werner-Heisenberg-Institut), Föhringer Ring 6, D-80805 München (Germany); Richter, R.H. [Halbleiterlabor der Max-Planck-Gesellschaft, Otto Hahn Ring 6, D-81739 München (Germany); Terzo, S.; Weigell, P. [Max-Planck-Institut für Physik (Werner-Heisenberg-Institut), Föhringer Ring 6, D-80805 München (Germany)

    2014-09-11

    The performance of pixel modules built from 75 μm thin silicon sensors and ATLAS read-out chips employing the Solid Liquid InterDiffusion (SLID) interconnection technology is presented. This technology, developed by the Fraunhofer EMFT, is a possible alternative to the standard bump-bonding. It allows for stacking of different interconnected chip and sensor layers without destroying the already formed bonds. In combination with Inter-Chip-Vias (ICVs) this paves the way for vertical integration. Both technologies are combined in a pixel module concept which is the basis for the modules discussed in this paper. Mechanical and electrical parameters of pixel modules employing both SLID interconnections and sensors of 75 μm thickness are covered. The mechanical features discussed include the interconnection efficiency, alignment precision and mechanical strength. The electrical properties comprise the leakage currents, tuning characteristics, charge collection, cluster sizes and hit efficiencies. Targeting at a usage at the high luminosity upgrade of the LHC accelerator called HL-LHC, the results were obtained before and after irradiation up to fluences of 10{sup 16}n{sub eq}/cm{sup 2}.

  3. Towards a high performing UV-A sensor based on Silicon Carbide and hydrogenated Silicon Nitride absorbing layers

    International Nuclear Information System (INIS)

    Mazzillo, M.; Renna, L.; Costa, N.; Badalà, P.; Sciuto, A.; Mannino, G.

    2016-01-01

    Exposure to ultraviolet (UV) radiation is a major risk factor for most skin cancers. The sun is our primary natural source of UV radiation. The strength of the sun's ultraviolet radiation is expressed as Solar UV Index (UVI). UV-A (320–400 nm) and UV-B (290–320 nm) rays mostly contribute to UVI. UV-B is typically the most destructive form of UV radiation because it has enough energy to cause photochemical damage to cellular DNA. Also overexposure to UV-A rays, although these are less energetic than UV-B photons, has been associated with toughening of the skin, suppression of the immune system, and cataract formation. The use of preventive measures to decrease sunlight UV radiation absorption is fundamental to reduce acute and irreversible health diseases to skin, eyes and immune system. In this perspective UV sensors able to monitor in a monolithic and compact chip the UV Index and relative UV-A and UV-B components of solar spectrum can play a relevant role for prevention, especially in view of the integration of these detectors in close at hand portable devices. Here we present the preliminary results obtained on our UV-A sensor technology based on the use of hydrogenated Silicon Nitride (SiN:H) thin passivating layers deposited on the surface of thin continuous metal film Ni 2 Si/4H-SiC Schottky detectors, already used for UV-Index monitoring. The first UV-A detector prototypes exhibit a very low leakage current density of about 0.2 pA/mm 2 and a peak responsivity value of 0.027 A/W at 330 nm, both measured at 0V bias.

  4. Bragg gratings: Optical microchip sensors

    Science.gov (United States)

    Watts, Sam

    2010-07-01

    A direct UV writing technique that can create multiple Bragg gratings and waveguides in a planar silica-on-silicon chip is enabling sensing applications ranging from individual disposable sensors for biotechnology through to multiplexed sensor networks in pharmaceutical manufacturing.

  5. Performance of the PHOBOS silicon sensors

    Science.gov (United States)

    Decowski, M. P.; Back, B. B.; Baker, M. D.; Barton, D. S.; Betts, R. R.; Bindel, R.; Budzanowski, A.; Busza, W.; Carroll, A.; Garcia, E.; George, N.; Gulbrandsen, K.; Gushue, S.; Halliwell, C.; Hamblen, J.; Heintzelman, G. A.; Henderson, C.; Hołyński, R.; Hofman, D. J.; Holzman, B.; Johnson, E.; Kane, J. L.; Katzy, J.; Khan, N.; Kucewicz, W.; Kulinich, P.; Lin, W. T.; Manly, S.; McLeod, D.; Michałowski, J.; Mignerey, A. C.; Mülmenstädt, J.; Nouicer, R.; Olszewski, A.; Pak, R.; Park, I. C.; Pernegger, H.; Reed, C.; Remsberg, L. P.; Reuter, M.; Roland, C.; Roland, G.; Rosenberg, L.; Sarin, P.; Sawicki, P.; Skulski, W.; Steadman, S. G.; Stephans, G. S. F.; Steinberg, P.; Stodulski, M.; Sukhanov, A.; Tang, J.-L.; Teng, R.; Trzupek, A.; Vale, C.; van Nieuwenhuizen, G. J.; Verdier, R.; Wadsworth, B.; Wolfs, F. L. H.; Wosiek, B.; Woźniak, K.; Wuosmaa, A. H.; Wysłouch, B.

    2002-02-01

    The PHOBOS detector is designed to study the physics of Au+Au collisions at the Relativistic Heavy Ion Collider. The detector is almost entirely made of silicon pad detectors and was fully operational during the first year of operation. The detector is described, and key performance characteristics are summarized.

  6. Performance of the PHOBOS silicon sensors

    CERN Document Server

    Decowski, M P; Baker, M D; Barton, D S; Betts, R R; Bindel, R; Budzanowski, A; Busza, W; Carroll, A; García, E; George, N; Gulbrandsen, K H; Gushue, S; Halliwell, C; Hamblen, J; Heintzelman, G A; Henderson, C; Holynski, R; Hofman, D J; Holzman, B; Johnson, E; Kane, J L; Katzy, J; Khan, N; Kucewicz, W; Kulinich, P; Lin, W T; Manly, S; McLeod, D; Michalowski, J; Mignerey, A C; Mülmenstädt, J; Nouicer, R; Olszewski, A; Pak, R; Park, I C; Pernegger, H; Reed, C; Remsberg, L P; Reuter, M; Roland, C; Roland, G; Rosenberg, L J; Sarin, P; Sawicki, P; Skulski, W; Steadman, S G; Stephans, G S F; Steinberg, P; Stodulski, M; Sukhanov, A; Tang, J L; Teng, R; Trzupek, A; Vale, C; Nieuwenhuizen, G J; Verdier, R; Wadsworth, B; Wolfs, F L H; Wosiek, B; Wozniak, K; Wuosmaa, A H; Wyslouch, B

    2002-01-01

    The PHOBOS detector is designed to study the physics of Au+Au collisions at the Relativistic Heavy Ion Collider. The detector is almost entirely made of silicon pad detectors and was fully operational during the first year of operation. The detector is described, and key performance characteristics are summarized.

  7. Development of a miniaturized watch-type dosimeter using a silicon printed-circuit board

    International Nuclear Information System (INIS)

    Ishikura, Takeshi; Sakamaki, Tsuyoshi; Matsumoto, Iwao; Aoyama, Kei; Nakamura, Takashi

    2008-01-01

    The electrical personal dosimeter using a silicon semiconductor sensor has the advantage of real time response and alarm function, which can prevent unexpected over-exposure. We tried to develop a miniaturized watch-type dosimeter by incorporating the silicon semiconductor sensor on a silicon printed-circuit board. Thin film resistors, capacitors and wiring patterns are formed on a downsized printed-circuit board. Electronic parts including transistors are mounted by soldering on the silicon printed-circuit board. The dosimeter is further miniaturized by downsizing the amplifier circuit, the semiconductor radiation sensor, the power supply circuit, setting parts and alarm part. The performance of the developed dosimeter was evaluated with respect to the gamma-ray spectra, angular dependence and linearity to dose equivalent rate, and it was confirmed that this dosimeter has the performance equivalent to a commercially available electrical personal dosimeter. (author)

  8. Impact of irradiations by protons with different energies on silicon sensors

    International Nuclear Information System (INIS)

    Neubueser, Coralie

    2013-06-01

    In the frame of the CMS tracker upgrade campaign the radiation damage of oxygenrich n-type silicon pad diodes induced by 23 MeV and 23 GeV protons was investigated. The diodes were manufactured by Hamamatsu Photonics. After irradiation with 1 MeV neutron equivalent fluences between 1 x 10 11 cm -2 and 1.5 x 10 15 cm -2 , the sensors were electrically characterized by means of capacitance-voltage (CV) and current-voltage (IV) measurements. Current pulses recorded by the Transient Current Technique (TCT) and Charge Collection Efficiency (CCE) measurements show a dependence of the bulk damage on the proton energy. At a fluence of Φ eq ∼3 x 10 14 cm -2 oxygen-rich n-type diodes demonstrate clear Space Charge Sign Inversion (SCSI) after 23 MeV proton irradiation. This effect does not appear after the irradiation with 23 GeV protons. Moreover, RD50 pad diodes were irradiated with 23 MeV protons, electrically characterized and compared to results obtained after 23 GeV irradiations. Our previous observation on the energy dependence of the radiation damage could be confirmed. In order to get a deeper understanding of the differences of the radiation induced defects, the Deep Level Transient Spectroscopy (DLTS) and Thermally Stimulated Current Technique (TSC) were utilized. Defects with impact on the space charge could be identified and characterized and it was possible to find some hints for the reason of the SCSI after 23 MeV proton irradiation. Moreover, a dependence on the oxygen concentration of the sensors could be observed.

  9. Eliminating the non-Gaussian spectral response of X-ray absorbers for transition-edge sensors

    Science.gov (United States)

    Yan, Daikang; Divan, Ralu; Gades, Lisa M.; Kenesei, Peter; Madden, Timothy J.; Miceli, Antonino; Park, Jun-Sang; Patel, Umeshkumar M.; Quaranta, Orlando; Sharma, Hemant; Bennett, Douglas A.; Doriese, William B.; Fowler, Joseph W.; Gard, Johnathon D.; Hays-Wehle, James P.; Morgan, Kelsey M.; Schmidt, Daniel R.; Swetz, Daniel S.; Ullom, Joel N.

    2017-11-01

    Transition-edge sensors (TESs) as microcalorimeters for high-energy-resolution X-ray spectroscopy are often fabricated with an absorber made of materials with high Z (for X-ray stopping power) and low heat capacity (for high resolving power). Bismuth represents one of the most compelling options. TESs with evaporated bismuth absorbers have shown spectra with undesirable and unexplained low-energy tails. We have developed TESs with electroplated bismuth absorbers over a gold layer that are not afflicted by this problem and that retain the other positive aspects of this material. To better understand these phenomena, we have studied a series of TESs with gold, gold/evaporated bismuth, and gold/electroplated bismuth absorbers, fabricated on the same die with identical thermal coupling. We show that the bismuth morphology is linked to the spectral response of X-ray TES microcalorimeters.

  10. The silicon vertex detector of the Belle II experiment

    Energy Technology Data Exchange (ETDEWEB)

    Adamczyk, K. [H. Niewodniczanski Institute of Nuclear Physics, Krakow 31-342 (Poland); Aihara, H. [Department of Physics, University of Tokyo, Tokyo 113-0033 (Japan); Angelini, C. [Dipartimento di Fisica, Universitá di Pisa, I-56127 Pisa (Italy); INFN Sezione di Pisa, I-56127 Pisa (Italy); Aziz, T.; Babu, V. [Tata Institute of Fundamental Research, Mumbai 400005 (India); Bacher, S. [H. Niewodniczanski Institute of Nuclear Physics, Krakow 31-342 (Poland); Bahinipati, S. [Indian Institute of Technology Bhubaneswar, Satya Nagar (India); Barberio, E.; Baroncelli, T. [School of Physics, University of Melbourne, Melbourne, Victoria 3010 (Australia); Basith, A.K. [Indian Institute of Technology Madras, Chennai 600036 (India); Batignani, G. [Dipartimento di Fisica, Universitá di Pisa, I-56127 Pisa (Italy); INFN Sezione di Pisa, I-56127 Pisa (Italy); Bauer, A. [Institute of High Energy Physics, Austrian Academy of Sciences, 1050 Vienna (Austria); Behera, P.K. [Indian Institute of Technology Madras, Chennai 600036 (India); Bergauer, T. [Institute of High Energy Physics, Austrian Academy of Sciences, 1050 Vienna (Austria); Bettarini, S. [Dipartimento di Fisica, Universitá di Pisa, I-56127 Pisa (Italy); INFN Sezione di Pisa, I-56127 Pisa (Italy); Bhuyan, B. [Indian Institute of Technology Guwahati, Assam 781039 (India); Bilka, T. [Faculty of Mathematics and Physics, Charles University, 121 16 Prague (Czech Republic); Bosi, F. [INFN Sezione di Pisa, I-56127 Pisa (Italy); Bosisio, L. [Dipartimento di Fisica, Universitá di Trieste, I-34127 Trieste (Italy); INFN Sezione di Trieste, I-34127 Trieste (Italy); Bozek, A. [H. Niewodniczanski Institute of Nuclear Physics, Krakow 31-342 (Poland); and others

    2016-07-11

    The silicon vertex detector of the Belle II experiment, structured in a lantern shape, consists of four layers of ladders, fabricated from two to five silicon sensors. The APV25 readout ASIC chips are mounted on one side of the ladder to minimize the signal path for reducing the capacitive noise; signals from the sensor backside are transmitted to the chip by bent flexible fan-out circuits. The ladder is assembled using several dedicated jigs. Sensor motion on the jig is minimized by vacuum chucking. The gluing procedure provides such a rigid foundation that later leads to the desired wire bonding performance. The full ladder with electrically functional sensors is consistently completed with a fully developed assembly procedure, and its sensor offsets from the design values are found to be less than 200 μm. The potential functionality of the ladder is also demonstrated by the radioactive source test.

  11. Effect of oxygen and hydrogen on the optical and electrical characteristics of porous silicon. Towards sensor applications

    International Nuclear Information System (INIS)

    Green, S.

    2000-02-01

    The effect of adsorbed oxygen and hydrogen gas on porous silicon has been investigated using two different techniques, viz. optical and electrical. The photoluminescence quenching by oxygen and hydrogen was found to be reversible with a response time of the order of 3000 s. Unlike any reported porous silicon gas quenching systems, both the extent and rate of quenching were found to be a function of photoluminescence wavelength. The quenching is attributed to charge transfer from the conduction band of porous silicon to the lowest unoccupied molecular orbital of oxygen and hydrogen, respectively. Surface conductance measurements (aluminium contacts) show that the principal charge transfer process is via tunnelling, with some conduction through the underlying bulk p-type silicon layer. Symmetrical current-voltage plots were obtained for this system which were attributed to pinning of the aluminium-porous silicon Fermi level at mid-gap by the high surface trap density. An approximate doubling of the aluminium electrode separation was found to reduce approximately fourfold the initial rate of increase in surface conductance on adsorption of oxygen at a pressure of 10 torr. To the best of the author's knowledge this is the first time that such an effect has been reported in a room temperature solid state gas sensor. Gas sensitivity measurements using surface contacts show a logarithmic response to the concentration of oxygen up to a pressure of 100 torr with a rapid response, of 300 s. A 39% increase in surface conductance occurs on exposure of the device to 100 torr of oxygen. The surface conductance of the device decreases by 34% on exposure to one atmosphere of hydrogen with a response time of the order 2000 s. Transverse conductance (DC) measurements show that Au/PS/p-Si/Al..Ag devices behave like a field-dependent diode. An admittance spectroscopy technique has been applied to porous silicon for the first time to calculate g 0 , the trap density at the Fermi level

  12. Semiconductor sensors

    International Nuclear Information System (INIS)

    Hartmann, Frank

    2011-01-01

    Semiconductor sensors have been around since the 1950s and today, every high energy physics experiment has one in its repertoire. In Lepton as well as Hadron colliders, silicon vertex and tracking detectors led to the most amazing physics and will continue doing so in the future. This contribution tries to depict the history of these devices exemplarily without being able to honor all important developments and installations. The current understanding of radiation damage mechanisms and recent R and D topics demonstrating the future challenges and possible technical solutions for the SLHC detectors are presented. Consequently semiconductor sensor candidates for an LHC upgrade and a future linear collider are also briefly introduced. The work presented here is a collage of the work of many individual silicon experts spread over several collaborations across the world.

  13. The upgrade of the ALICE Inner Tracking System - Status of the R&D; on monolithic silicon pixel sensors

    OpenAIRE

    Van Hoorne, Jacobus Willem

    2014-01-01

    s a major part of its upgrade plans, the ALICE experiment schedules the installation of a novel Inner Tracking System (ITS) during the Long Shutdown 2 (LS2) of the LHC in 2018/19. It will replace the present silicon tracker with seven layers of Monolithic Active Pixel Sensors (MAPS) and significantly improve the detector performance in terms of tracking and rate capabilities. The choice of technology has been guided by the tight requirements on the material budget of 0 : 3 % X = X 0 /layer fo...

  14. Sensors for the CMS High Granularity Calorimeter

    CERN Document Server

    Maier, Andreas Alexander

    2017-01-01

    The CMS experiment is currently developing high granularity calorimeter endcapsfor its HL-LHC upgrade. The design foresees silicon sensors as the active material for the high radiation region close to the beampipe. Regions of lower radiation are additionally equipped with plastic scintillator tiles. This technology is similar to the calorimeter prototypes developed in the framework of the Linear Collider by the CALICE collaboration. The current status of the silicon sensor development is presented. Results of single diode measurements are shown as well as tests of full 6-inch hexagonal sensor wafers. A short summary of test beam results concludes the article.

  15. Large area thinned planar sensors for future high-luminosity-LHC upgrades

    International Nuclear Information System (INIS)

    Wittig, T.; Lawerenz, A.; Röder, R.

    2016-01-01

    Planar hybrid silicon sensors are a well proven technology for past and current particle tracking detectors in HEP experiments. However, the future high-luminosity upgrades of the inner trackers at the LHC experiments pose big challenges to the detectors. A first challenge is an expected radiation damage level of up to 2⋅ 10 16 n eq /cm 2 . For planar sensors, one way to counteract the charge loss and thus increase the radiation hardness is to decrease the thickness of their active area. A second challenge is the large detector area which has to be built as cost-efficient as possible. The CiS research institute has accomplished a proof-of-principle run with n-in-p ATLAS-Pixel sensors in which a cavity is etched to the sensor's back side to reduce its thickness. One advantage of this technology is the fact that thick frames remain at the sensor edges and guarantee mechanical stability on wafer level while the sensor is left on the resulting thin membrane. For this cavity etching technique, no handling wafers are required which represents a benefit in terms of process effort and cost savings. The membranes with areas of up to ∼ 4 × 4 cm 2 and thicknesses of 100 and 150 μm feature a sufficiently good homogeneity across the whole wafer area. The processed pixel sensors show good electrical behaviour with an excellent yield for a suchlike prototype run. First sensors with electroless Ni- and Pt-UBM are already successfully assembled with read-out chips.

  16. Large area thinned planar sensors for future high-luminosity-LHC upgrades

    Science.gov (United States)

    Wittig, T.; Lawerenz, A.; Röder, R.

    2016-12-01

    Planar hybrid silicon sensors are a well proven technology for past and current particle tracking detectors in HEP experiments. However, the future high-luminosity upgrades of the inner trackers at the LHC experiments pose big challenges to the detectors. A first challenge is an expected radiation damage level of up to 2ṡ 1016 neq/cm2. For planar sensors, one way to counteract the charge loss and thus increase the radiation hardness is to decrease the thickness of their active area. A second challenge is the large detector area which has to be built as cost-efficient as possible. The CiS research institute has accomplished a proof-of-principle run with n-in-p ATLAS-Pixel sensors in which a cavity is etched to the sensor's back side to reduce its thickness. One advantage of this technology is the fact that thick frames remain at the sensor edges and guarantee mechanical stability on wafer level while the sensor is left on the resulting thin membrane. For this cavity etching technique, no handling wafers are required which represents a benefit in terms of process effort and cost savings. The membranes with areas of up to ~ 4 × 4 cm2 and thicknesses of 100 and 150 μm feature a sufficiently good homogeneity across the whole wafer area. The processed pixel sensors show good electrical behaviour with an excellent yield for a suchlike prototype run. First sensors with electroless Ni- and Pt-UBM are already successfully assembled with read-out chips.

  17. Development of an industrial tool to make passivation layers for UV sensors improvement

    Energy Technology Data Exchange (ETDEWEB)

    Larmande, Yannick, E-mail: larmande@lp3.univ-mrs.fr [LP3 Laboratory, UMR 6182 CNRS - Mediterranean University, Campus de Luminy, Case 917, 13 288 Marseille Cedex 9 (France); Ion Beam Services, Rue Gaston Imbert Prolongee, 13 790 Peynier (France); Vervisch, Vanessa; Delaporte, Philippe; Sarnet, Thierry; Sentis, Marc [LP3 Laboratory, UMR 6182 CNRS - Mediterranean University, Campus de Luminy, Case 917, 13 288 Marseille Cedex 9 (France); Etienne, Hasnaa; Torregrosa, Frank [Ion Beam Services, Rue Gaston Imbert Prolongee, 13 790 Peynier (France)

    2012-09-15

    Highlights: Black-Right-Pointing-Pointer We have reached a sheet resistance lower than 500 {Omega}/sq for a junction depth of 29 nm and an abruptness of 3 nm/dec. Black-Right-Pointing-Pointer Electrical measurements on diodes have revealed a significant leakage current of around 10{sup -5} A/cm{sup 2}, revealing the presence of defects inside the junction. Black-Right-Pointing-Pointer Light Beam Induced Current (LBIC) characterization has shown that the defects are localized at the edge of the laser beam. - Abstract: Today, the collection of generated charges is a limiting problem for the realization of UV sensors. Indeed, the native silicon oxide of the surface acts as a region of recombination centers . Then, the sensors exhibit a low sensitivity in the UV wavelengths. An approach to overcome this drawback is the realization of a few nanometers thick passivation layer at the surface by creating an ultra-shallow junction (USJ) with a high activation level. The realization of such junctions requires two steps: first, the implantation of dopants which consists in introducing impurities at the surface of the substrate, then the thermal activation of these dopants to obtain the electrical characteristics of the junction. The Plasma Immersion Ion Implantation (PIII) process allows us to implant dopants in a very thin layer (10-20 nm) into the silicon substrate . These impurities are located in interstitial sites in the silicon, and need an activation process to modify the electrical properties of the layer. The step is performed by means of an excimer laser annealing process (ELA) to melt a very thin layer of the silicon substrate and then activate the dopants without diffusion. In the framework of the ALDIP project (Laser Activation of Dopants implanted by Plasma Immersion), IBS Company has developed with its partners a cluster to realize these two steps with industrial production rates and cleanliness. Four-point probe measurements and SIMS analyzes have been used to

  18. The Belle II Silicon Vertex Detector

    Energy Technology Data Exchange (ETDEWEB)

    Friedl, M., E-mail: markus.friedl@oeaw.ac.at [HEPHY – Institute of High Energy Physics, Nikolsdorfer Gasse 18, 1050 Vienna (Austria); Ackermann, K. [MPI Munich, Föhringer Ring 6, 80805 München (Germany); Aihara, H. [University of Tokyo, Department of Physics, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-0033 (Japan); Aziz, T. [Tata Institute of Fundamental Research, Experimental High Energy Physics Group, Homi Bhabha Road, Mumbai 400 005 (India); Bergauer, T. [HEPHY – Institute of High Energy Physics, Nikolsdorfer Gasse 18, 1050 Vienna (Austria); Bozek, A. [Institute of Nuclear Physics, Division of Particle Physics and Astrophysics, ul. Radzikowskiego 152, 31 342 Krakow (Poland); Campbell, A. [DESY, Notkestrasse 85, 22607 Hamburg (Germany); Dingfelder, J. [University of Bonn, Department of Physics and Astronomy, Nussallee 12, 53115 Bonn (Germany); Drasal, Z. [Charles University, Institute of Particle and Nuclear Physics, Ke Karlovu 3, 121 16 Praha 2 (Czech Republic); Frankenberger, A. [HEPHY – Institute of High Energy Physics, Nikolsdorfer Gasse 18, 1050 Vienna (Austria); Gadow, K. [DESY, Notkestrasse 85, 22607 Hamburg (Germany); Gfall, I. [HEPHY – Institute of High Energy Physics, Nikolsdorfer Gasse 18, 1050 Vienna (Austria); Haba, J.; Hara, K.; Hara, T. [KEK, 1-1 Oho, Tsukuba, Ibaraki 305-0801 (Japan); Higuchi, T. [University of Tokyo, Kavli Institute for Physics and Mathematics of the Universe, 5-1-5 Kashiwanoha, Kashiwa, Chiba 277-8583 (Japan); Himori, S. [Tohoku University, Department of Physics, Aoba Aramaki Aoba-ku, Sendai 980-8578 (Japan); Irmler, C. [HEPHY – Institute of High Energy Physics, Nikolsdorfer Gasse 18, 1050 Vienna (Austria); Ishikawa, A. [Tohoku University, Department of Physics, Aoba Aramaki Aoba-ku, Sendai 980-8578 (Japan); Joo, C. [Seoul National University, High Energy Physics Laboratory, 25-107 Shinlim-dong, Kwanak-gu, Seoul 151-742 (Korea, Republic of); and others

    2013-12-21

    The KEKB machine and the Belle experiment in Tsukuba (Japan) are now undergoing an upgrade, leading to an ultimate luminosity of 8×10{sup 35}cm{sup −2}s{sup −1} in order to measure rare decays in the B system with high statistics. The previous vertex detector cannot cope with this 40-fold increase of luminosity and thus needs to be replaced. Belle II will be equipped with a two-layer Pixel Detector surrounding the beam pipe, and four layers of double-sided silicon strip sensors at higher radii than the old detector. The Silicon Vertex Detector (SVD) will have a total sensitive area of 1.13m{sup 2} and 223,744 channels—twice as many as its predecessor. All silicon sensors will be made from 150 mm wafers in order to maximize their size and thus to reduce the relative contribution of the support structure. The forward part has slanted sensors of trapezoidal shape to improve the measurement precision and to minimize the amount of material as seen by particles from the vertex. Fast-shaping front-end amplifiers will be used in conjunction with an online hit time reconstruction algorithm in order to reduce the occupancy to the level of a few percent at most. A novel “Origami” chip-on-sensor scheme is used to minimize both the distance between strips and amplifier (thus reducing the electronic noise) as well as the overall material budget. This report gives an overview on the status of the Belle II SVD and its components, including sensors, front-end detector ladders, mechanics, cooling and the readout electronics.

  19. The Belle II Silicon Vertex Detector

    International Nuclear Information System (INIS)

    Friedl, M.; Ackermann, K.; Aihara, H.; Aziz, T.; Bergauer, T.; Bozek, A.; Campbell, A.; Dingfelder, J.; Drasal, Z.; Frankenberger, A.; Gadow, K.; Gfall, I.; Haba, J.; Hara, K.; Hara, T.; Higuchi, T.; Himori, S.; Irmler, C.; Ishikawa, A.; Joo, C.

    2013-01-01

    The KEKB machine and the Belle experiment in Tsukuba (Japan) are now undergoing an upgrade, leading to an ultimate luminosity of 8×10 35 cm −2 s −1 in order to measure rare decays in the B system with high statistics. The previous vertex detector cannot cope with this 40-fold increase of luminosity and thus needs to be replaced. Belle II will be equipped with a two-layer Pixel Detector surrounding the beam pipe, and four layers of double-sided silicon strip sensors at higher radii than the old detector. The Silicon Vertex Detector (SVD) will have a total sensitive area of 1.13m 2 and 223,744 channels—twice as many as its predecessor. All silicon sensors will be made from 150 mm wafers in order to maximize their size and thus to reduce the relative contribution of the support structure. The forward part has slanted sensors of trapezoidal shape to improve the measurement precision and to minimize the amount of material as seen by particles from the vertex. Fast-shaping front-end amplifiers will be used in conjunction with an online hit time reconstruction algorithm in order to reduce the occupancy to the level of a few percent at most. A novel “Origami” chip-on-sensor scheme is used to minimize both the distance between strips and amplifier (thus reducing the electronic noise) as well as the overall material budget. This report gives an overview on the status of the Belle II SVD and its components, including sensors, front-end detector ladders, mechanics, cooling and the readout electronics

  20. Design considerations for TES and QET sensors

    International Nuclear Information System (INIS)

    Cabrera, B.

    2000-01-01

    We summarize some of the effects that must be taken into account in the design of superconducting Transition Edge Sensors (TES) and Quasiparticle-trap-assisted Electrothermal-feedback Transition-edge-sensors (QET). For the TES these include determining time constants, maintaining voltage bias, avoid electrothermal oscillations, critical current limitations, and saturation. For QET phonon sensors, voltage bias was conceived to allow the simultaneous biasing of parallel TESs with different transition temperatures, and preventing normal-superconducting phase separation

  1. Automotive sensors

    Science.gov (United States)

    Marek, Jiri; Illing, Matthias

    2003-01-01

    Sensors are an essential component of most electronic systems in the car. They deliver input parameters for comfort features, engine and emission control as well as for the active and passive safety systems. New technologies such as silicon micromachining play an important role for the introduction of these sensors in all vehicle classes. The importance and use of these sensor technologies in today"s automotive applications will be shown in this article. Finally an outlook on important current developments and new functions in the car will be given.

  2. GigaTracker, a Thin and Fast Silicon Pixels Tracker

    CERN Document Server

    Velghe, Bob; Bonacini, Sandro; Ceccucci, Augusto; Kaplon, Jan; Kluge, Alexander; Mapelli, Alessandro; Morel, Michel; Noël, Jérôme; Noy, Matthew; Perktold, Lukas; Petagna, Paolo; Poltorak, Karolina; Riedler, Petra; Romagnoli, Giulia; Chiozzi, Stefano; Cotta Ramusino, Angelo; Fiorini, Massimiliano; Gianoli, Alberto; Petrucci, Ferruccio; Wahl, Heinrich; Arcidiacono, Roberta; Jarron, Pierre; Marchetto, Flavio; Gil, Eduardo Cortina; Nuessle, Georg; Szilasi, Nicolas

    2014-01-01

    GigaTracker, the NA62’s upstream spectrometer, plays a key role in the kinematically constrained background suppression for the study of the K + ! p + n ̄ n decay. It is made of three independent stations, each of which is a six by three cm 2 hybrid silicon pixels detector. To meet the NA62 physics goals, GigaTracker has to address challenging requirements. The hit time resolution must be better than 200 ps while keeping the total thickness of the sensor to less than 0.5 mm silicon equivalent. The 200 μm thick sensor is divided into 18000 300 μm 300 μm pixels bump-bounded to ten independent read-out chips. The chips use an end-of-column architecture and rely on time-over- threshold discriminators. A station can handle a crossing rate of 750 MHz. Microchannel cooling technology will be used to cool the assembly. It allows us to keep the sensor close to 0 C with 130 μm of silicon in the beam area. The sensor and read-out chip performance were validated using a 45 pixel demonstrator with a laser test setu...

  3. Alpha radiation detection using silicon memory chips - preliminary studies

    International Nuclear Information System (INIS)

    Pace, R.; Paix, D.; Haskard, M.

    1993-01-01

    Alpha radiation dosage is an important occupational health factor in the mining of uranium and mineral sands. Alpha radiation induced errors in the data of silicon based memory chips provide the foundation for a new type of sensor, with the potential for affordable and prompt measurement of personal alpha doses. With particular reference to Dynamic Random Access Memories (DRAM) this paper introduces the operating principle of a memory based radiation sensor, which is the error mechanism in silicon integrated circuits. 14 refs., 3 figs

  4. Performance tests of developed silicon strip detector by using a 150 GeV electron beam

    International Nuclear Information System (INIS)

    Hyun, Hyojung; Jung, Sunwoo; Kah, Dongha; Kang, Heedong; Kim, Hongjoo; Park, Hwanbae

    2008-01-01

    We manufactured and characterized a silicon micro-strip detector to be used in a beam tracker. A silicon detector features a DC-coupled silicon strip sensor with VA1 Prime2 analog readout chips. The silicon strip sensors have been fabricated on 5-in. wafers at Electronics and Telecommunications Research Institute (Daejeon, Korea). The silicon strip sensor is single-sided and has 32 channels with a 1 mm pitch, and its active area is 3.2 by 3.2 cm 2 with 380 μm thickness. The readout electronics consists of VA hybrid, VA Interface, and FlashADC and Control boards. Analog signals from the silicon strip sensor were being processed by the analog readout chips on the VA hybrid board. Analog signals were then changed into digital signals by a 12 bit 25 MHz FlashADC. The digital signals were read out by the Linux-operating PC through the FlashADC-USB2 interface. The DAQ system and analysis programs were written in the framework of ROOT package. The beam test with the silicon detector had been performed at CERN beam facility. We used a 150 GeV electron beam out of the SPS(Super Proton Synchrotron) H2 beam line. We present beam test setup and measurement result of signal-to-noise ratio of each strip channel. (author)

  5. The LHCb Silicon Inner Tracker

    International Nuclear Information System (INIS)

    Sievers, P.

    2002-01-01

    A silicon strip detector has been adopted as baseline technology for the LHCb Inner Tracker system. It consists of nine planar stations covering a cross-shaped area around the LHCb beam pipe. Depending on the final layout of the stations the sensitive surface of the Inner Tracker will be of the order of 14 m 2 . Ladders have to be 22 cm long and the pitch of the sensors should be as large as possible in order to reduce costs of the readout electronics. Major design criteria are material budget, short shaping time and a moderate spatial resolution of about 80 μm. After an introduction on the requirements of the LHCb Inner Tracker we present a description and characterization of silicon prototype sensors. First, laboratory and test beam results are discussed

  6. Aviation Fuel Gauging Sensor Utilizing Multiple Diaphragm Sensors Incorporating Polymer Optical Fiber Bragg Gratings

    DEFF Research Database (Denmark)

    Marques, C. A. F.; Pospori, A.; Saez-Rodriguez, D.

    2016-01-01

    A high-performance fuel gauging sensor is described that uses five diaphragm-based pressure sensors, which are monitored using a linear array of polymer optical fiber Bragg gratings. The sensors were initially characterized using water, revealing a sensitivity of 98 pm/cm for four of the sensors...... of sensors manufactured with a polyurethane-based diaphragm showed no measurable deterioration over a three month period immersed in fuel. These sensors exhibited a sensitivity of 39 pm/cm, which is less than the silicone rubber devices due to the stiffer nature of the polyurethane material used....

  7. Low Thermal Conductance Transition Edge Sensor (TES) for SPICA

    International Nuclear Information System (INIS)

    Khosropanah, P.; Dirks, B.; Kuur, J. van der; Ridder, M.; Bruijn, M.; Popescu, M.; Hoevers, H.; Gao, J. R.; Morozov, D.; Mauskopf, P.

    2009-01-01

    We fabricated and characterized low thermal conductance transition edge sensors (TES) for SAFARI instrument on SPICA. The device is based on a superconducting Ti/Au bilayer deposited on suspended SiN membrane. The critical temperature of the device is 113 mK. The low thermal conductance is realized by using long and narrow SiN supporting legs. All measurements were performed having the device in a light-tight box, which to a great extent eliminates the loading of the background radiation. We measured the current-voltage (IV) characteristics of the device in different bath temperatures and determine the thermal conductance (G) to be equal to 320 fW/K. This value corresponds to a noise equivalent power (NEP) of 3x10 -19 W/√(Hz). The current noise and complex impedance is also measured at different bias points at 55 mK bath temperature. The measured electrical (dark) NEP is 1x10 -18 W/√(Hz), which is about a factor of 3 higher than what we expect from the thermal conductance that comes out of the IV curves. Despite using a light-tight box, the photon noise might still be the source of this excess noise. We also measured the complex impedance of the same device at several bias points. Fitting a simple first order thermal-electrical model to the measured data, we find an effective time constant of about 2.7 ms and a thermal capacity of 13 fJ/K in the middle of the transition.

  8. Belle II silicon vertex detector

    Energy Technology Data Exchange (ETDEWEB)

    Adamczyk, K. [H. Niewodniczanski Institute of Nuclear Physics, Krakow 31-342 (Poland); Aihara, H. [Department of Physics, University of Tokyo, Tokyo 113-0033 (Japan); Angelini, C. [Dipartimento di Fisica, Università di Pisa, I-56127 Pisa (Italy); INFN Sezione di Pisa, I-56127 Pisa (Italy); Aziz, T.; Babu, V. [Tata Institute of Fundamental Research, Mumbai 400005 (India); Bacher, S. [H. Niewodniczanski Institute of Nuclear Physics, Krakow 31-342 (Poland); Bahinipati, S. [Indian Institute of Technology Bhubaneswar, Satya Nagar (India); Barberio, E.; Baroncelli, Ti.; Baroncelli, To. [School of Physics, University of Melbourne, Melbourne, Victoria 3010 (Australia); Basith, A.K. [Indian Institute of Technology Madras, Chennai 600036 (India); Batignani, G. [Dipartimento di Fisica, Università di Pisa, I-56127 Pisa (Italy); INFN Sezione di Pisa, I-56127 Pisa (Italy); Bauer, A. [Institute of High Energy Physics, Austrian Academy of Sciences, 1050 Vienna (Austria); Behera, P.K. [Indian Institute of Technology Madras, Chennai 600036 (India); Bergauer, T. [Institute of High Energy Physics, Austrian Academy of Sciences, 1050 Vienna (Austria); Bettarini, S. [Dipartimento di Fisica, Università di Pisa, I-56127 Pisa (Italy); INFN Sezione di Pisa, I-56127 Pisa (Italy); Bhuyan, B. [Indian Institute of Technology Guwahati, Assam 781039 (India); Bilka, T. [Faculty of Mathematics and Physics, Charles University, 121 16 Prague (Czech Republic); Bosi, F. [INFN Sezione di Pisa, I-56127 Pisa (Italy); Bosisio, L. [Dipartimento di Fisica, Università di Trieste, I-34127 Trieste (Italy); INFN Sezione di Trieste, I-34127 Trieste (Italy); and others

    2016-09-21

    The Belle II experiment at the SuperKEKB collider in Japan is designed to indirectly probe new physics using approximately 50 times the data recorded by its predecessor. An accurate determination of the decay-point position of subatomic particles such as beauty and charm hadrons as well as a precise measurement of low-momentum charged particles will play a key role in this pursuit. These will be accomplished by an inner tracking device comprising two layers of pixelated silicon detector and four layers of silicon vertex detector based on double-sided microstrip sensors. We describe herein the design, prototyping and construction efforts of the Belle-II silicon vertex detector.

  9. Progress in thin-film silicon solar cells based on photonic-crystal structures

    Science.gov (United States)

    Ishizaki, Kenji; De Zoysa, Menaka; Tanaka, Yoshinori; Jeon, Seung-Woo; Noda, Susumu

    2018-06-01

    We review the recent progress in thin-film silicon solar cells with photonic crystals, where absorption enhancement is achieved by using large-area resonant effects in photonic crystals. First, a definitive guideline for enhancing light absorption in a wide wavelength range (600–1100 nm) is introduced, showing that the formation of multiple band edges utilizing higher-order modes confined in the thickness direction and the introduction of photonic superlattice structures enable significant absorption enhancement, exceeding that observed for conventional random scatterers. Subsequently, experimental evidence of this enhancement is demonstrated for a variety of thin-film Si solar cells: ∼500-nm-thick ultrathin microcrystalline silicon cells, few-µm-thick microcrystalline silicon cells, and ∼20-µm-thick thin single-crystalline silicon cells. The high short-circuit current densities and/or efficiencies observed for each cell structure confirm the effectiveness of using multiple band-edge resonant modes of photonic crystals for enhancing broadband absorption in actual solar cells.

  10. Design and simulation analysis of a novel pressure sensor based on graphene film

    Science.gov (United States)

    Nie, M.; Xia, Y. H.; Guo, A. Q.

    2018-02-01

    A novel pressure sensor structure based on graphene film as the sensitive membrane was proposed in this paper, which solved the problem to measure low and minor pressure with high sensitivity. Moreover, the fabrication process was designed which can be compatible with CMOS IC fabrication technology. Finite element analysis has been used to simulate the displacement distribution of the thin movable graphene film of the designed pressure sensor under the different pressures with different dimensions. From the simulation results, the optimized structure has been obtained which can be applied in the low measurement range from 10hPa to 60hPa. The length and thickness of the graphene film could be designed as 100μm and 0.2μm, respectively. The maximum mechanical stress on the edge of the sensitive membrane was 1.84kPa, which was far below the breaking strength of the silicon nitride and graphene film.

  11. Etched ion tracks in silicon oxide and silicon oxynitride as charge injection or extraction channels for novel electronic structures

    International Nuclear Information System (INIS)

    Fink, D.; Petrov, A.V.; Hoppe, K.; Fahrner, W.R.; Papaleo, R.M.; Berdinsky, A.S.; Chandra, A.; Chemseddine, A.; Zrineh, A.; Biswas, A.; Faupel, F.; Chadderton, L.T.

    2004-01-01

    The impact of swift heavy ions onto silicon oxide and silicon oxynitride on silicon creates etchable tracks in these insulators. After their etching and filling-up with highly resistive matter, these nanometric pores can be used as charge extraction or injection paths towards the conducting channel in the underlying silicon. In this way, a novel family of electronic structures has been realized. The basic characteristics of these 'TEMPOS' (=tunable electronic material with pores in oxide on silicon) structures are summarized. Their functionality is determined by the type of insulator, the etch track diameters and lengths, their areal densities, the type of conducting matter embedded therein, and of course by the underlying semiconductor and the contact geometry. Depending on the TEMPOS preparation recipe and working point, the structures may resemble gatable resistors, condensors, diodes, transistors, photocells, or sensors, and they are therefore rather universally applicable in electronics. TEMPOS structures are often sensitive to temperature, light, humidity and organic gases. Also light-emitting TEMPOS structures have been produced. About 37 TEMPOS-based circuits such as thermosensors, photosensors, humidity and alcohol sensors, amplifiers, frequency multipliers, amplitude modulators, oscillators, flip-flops and many others have already been designed and successfully tested. Sometimes TEMPOS-based circuits are more compact than conventional electronics

  12. Planar Hall effect sensor with magnetostatic compensation layer

    DEFF Research Database (Denmark)

    Dalslet, Bjarke Thomas; Donolato, Marco; Hansen, Mikkel Fougt

    2012-01-01

    Demagnetization effects in cross-shaped planar Hall effect sensors cause inhomogeneous film magnetization and a hysteretic sensor response. Furthermore, when using sensors for detection of magnetic beads, the magnetostatic field from the sensor edges attracts and holds magnetic beads near...... the sensor edges causing inhomogeneous and non-specific binding of the beads. We show theoretically that adding a compensation magnetic stack beneath the sensor stack and exchange-biasing it antiparallel to the sensor stack, the magnetostatic field is minimized. We show experimentally that the compensation...... stack removes nonlinear effects from the sensor response, it strongly reduces hysteresis, and it increases the homogeneity of the bead distribution. Finally, it reduces the non-specific binding due to magnetostatic fields allowing us to completely remove beads from the compensated sensor using a water...

  13. Development of an automatic characterisation system for silicon detectors

    CERN Document Server

    Hacker, J; Krammer, M; Wedenig, R

    2002-01-01

    The CMS experiment will be equipped with the largest silicon tracker in the world. The tracker will consist of about 25,000 silicon sensors which will cover an area of more than 200 m sup 2. Four quality test centres will carry out various checks on a representative sample of sensors to assure a homogeneous quality throughout the 2((1)/(2)) years of production. One of these centres is based in Vienna. To cope with the large number of sensors a fast and fully automatic characterisation system has been realised. We developed the software in LabView and built a cost-efficient probe station in house by assembling individual components and commercial instruments. Both the global properties of a sensor and the characteristic quantities of the individual strips can be measured. The measured data are immediately analysed and sent to a central database. The mechanical and electrical set-up will be explained and results from CMS prototype sensors are presented.

  14. Development of an automatic characterisation system for silicon detectors

    International Nuclear Information System (INIS)

    Hacker, J.; Bergauer, T.; Krammer, M.; Wedenig, R.

    2002-01-01

    The CMS experiment will be equipped with the largest silicon tracker in the world. The tracker will consist of about 25,000 silicon sensors which will cover an area of more than 200 m 2 . Four quality test centres will carry out various checks on a representative sample of sensors to assure a homogeneous quality throughout the 2((1)/(2)) years of production. One of these centres is based in Vienna. To cope with the large number of sensors a fast and fully automatic characterisation system has been realised. We developed the software in LabView and built a cost-efficient probe station in house by assembling individual components and commercial instruments. Both the global properties of a sensor and the characteristic quantities of the individual strips can be measured. The measured data are immediately analysed and sent to a central database. The mechanical and electrical set-up will be explained and results from CMS prototype sensors are presented

  15. Development of N+ in P pixel sensors for a high-luminosity large hadron collider

    International Nuclear Information System (INIS)

    Kamada, Shintaro; Yamamura, Kazuhisa; Unno, Yoshinobu; Ikegami, Yoichi

    2014-01-01

    Hamamatsu Photonics K. K. is developing an N+ in a p planar pixel sensor with high radiation tolerance for the high-luminosity large hadron collider (HL-LHC). The N+ in the p planar pixel sensor is a candidate for the HL-LHC and offers the advantages of high radiation tolerance at a reasonable price compared with the N+ in an n planar sensor, the three-dimensional sensor, and the diamond sensor. However, the N+ in the p planar pixel sensor still presents some problems that need to be solved, such as its slim edge and the danger of sparks between the sensor and readout integrated circuit. We are now attempting to solve these problems with wafer-level processes, which is important for mass production. To date, we have obtained a 250-μm edge with an applied bias voltage of 1000 V. To protect against high-voltage sparks from the edge, we suggest some possible designs for the N+ edge. - Highlights: • We achieved a tolerance of 1000 V with a 250-μm edge by Al2O3 side wall passivation. • Above is a wafer process and suitable for mass production. • For edge-spark protection, we suggest N+ edge with an isolation

  16. A flexible infrared sensor for tissue oximetry

    DEFF Research Database (Denmark)

    Petersen, Søren Dahl; Thyssen, Anders; Engholm, Mathias

    2013-01-01

    We present a flexible infrared sensor for use in tissue oximetry with the aim of treating prematurely born infants. The sensor will detect the oxygen saturation in brain tissue through near infrared spectroscopy. The sensor itself consists of several individual silicon photo detectors fully...

  17. An algorithm for calculating the Lorentz angle in silicon detectors [online

    OpenAIRE

    Bartsch, Valeria; De Boer, Willem; Bol, Johannes; Dierlamm, Alexander; Grigoriev, Eugene; Hauler, Florian; Heising, Stephan; Jungermann, Levin

    2001-01-01

    The CMS (Compact Muon Solenoid) detector will use silicon sensors in the harsh radiation environment of the LHC (Large Hadron Collider) and high magnetic fields. The drift direction of the charge carriers is aected by the Lorentz force due to the high magnetic field. Also the resulting radiation damage changes the properties of the drift. The CMS silicon strip detector is read out on the p-side of the sensors, where holes are coll...

  18. Characterisation of silicon detectors for the LHCb Vertex Locator Upgrade

    CERN Document Server

    AUTHOR|(INSPIRE)INSPIRE-00401830

    The LHCb Vertex Locator must be upgraded in the next long shutdown of the LHC, starting at the end of 2018. This is due to the increased occupancy. The current silicon strip detector is being upgraded to a silicon pixel detector. The prototype sensors for this detector were tested thoroughly before a final design will be chosen. The testing was done with the Timepix3 Telescope, which was commissioned in the summer of 2014. The charge collected by the sensors and efficiency of the sensors were investigated. After maximum irradiation, of 8$\\times$10$^{15}$ 1 MeV n$_{eq}$/cm$^{2}$, the sensors must have a most probable value of collected charge of 6000 electrons before 1000 V or breakdown, whichever comes first. The sensors must also have a high efficiency at maximum irradiation of 8$\\times$10$^{15}$ 1 MeV n$_{eq}$/cm$^{2}$. All tested sensors reach these criteria. All sensors reach 6000 electrons between 600 V and 800 V and have a cluster finding efficiency of over 95\\% at the respective voltages. Overall, a 15...

  19. Impact of irradiations by protons with different energies on silicon sensors

    Energy Technology Data Exchange (ETDEWEB)

    Neubueser, Coralie

    2013-06-15

    In the frame of the CMS tracker upgrade campaign the radiation damage of oxygenrich n-type silicon pad diodes induced by 23 MeV and 23 GeV protons was investigated. The diodes were manufactured by Hamamatsu Photonics. After irradiation with 1 MeV neutron equivalent fluences between 1 x 10{sup 11} cm{sup -2} and 1.5 x 10{sup 15} cm{sup -2}, the sensors were electrically characterized by means of capacitance-voltage (CV) and current-voltage (IV) measurements. Current pulses recorded by the Transient Current Technique (TCT) and Charge Collection Efficiency (CCE) measurements show a dependence of the bulk damage on the proton energy. At a fluence of {Phi}{sub eq}{approx}3 x 10{sup 14} cm{sup -2} oxygen-rich n-type diodes demonstrate clear Space Charge Sign Inversion (SCSI) after 23 MeV proton irradiation. This effect does not appear after the irradiation with 23 GeV protons. Moreover, RD50 pad diodes were irradiated with 23 MeV protons, electrically characterized and compared to results obtained after 23 GeV irradiations. Our previous observation on the energy dependence of the radiation damage could be confirmed. In order to get a deeper understanding of the differences of the radiation induced defects, the Deep Level Transient Spectroscopy (DLTS) and Thermally Stimulated Current Technique (TSC) were utilized. Defects with impact on the space charge could be identified and characterized and it was possible to find some hints for the reason of the SCSI after 23 MeV proton irradiation. Moreover, a dependence on the oxygen concentration of the sensors could be observed.

  20. Characterization of silicon microstrip sensors, front-end electronics, and prototype tracking detectors for the CBM experiment at FAIR

    Energy Technology Data Exchange (ETDEWEB)

    Sorokin, Iurii

    2013-07-01

    The Compressed Baryonic Matter (CBM) experiment will explore the phase diagram of strongly interacting matter in the region of high net baryonic densities. The matter at the extreme conditions will be studied in collisions of a heavy ion beam with a fixed heavy element target. The present work is devoted to the development of the main component of the CBM experiment - the Silicon Tracking System (STS). The STS has to enable reconstruction of up to 1000 charged particle tracks per nucleus-nucleus interaction at the rate of up to 10 MHz, provide a momentum resolution Δp/p of 1 %, and withstand the radiation load of up to 10{sup 14} n{sub eq}/cm{sup 2} (n{sub eq}-neutron equivalent). The STS will be based on double-sided silicon microstrip sensors, that will be arranged in 8 planes in the aperture of the dipole magnet. Selftriggering readout electronics will be located on the periphery of the detecting planes, and connected to the sensors with low mass microcables. In the stage of R and D, as well as in the stages of pre-series and series production, characterization of the sensors, of the front-end electronics, and of the complete detector modules has to be performed. In the present work the required techniques were developed, and the performance of the latest detector prototypes was evaluated. A particular attention is paid to evaluation of the signal amplitude, as it is one of the most important detector characteristics. Techniques for measuring the passive electrical characteristics of the sensors were developed. These include: the coupling and the interstrip capacitances, the interstrip resistance, the bias resistance, the strip leakage current, the bulk capacitance, and the bulk leakage current. The techniques will be applied for the quality assurance of the sensors during the pre-series and the series production. Extensive characterization of the prototype readout chip, n-XYTER, was performed. The register settings were optimized, and the dependence of the