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Sample records for ech2o ec-5 te

  1. Correction of temperature and bulk electrical conductivity effects on soil water content measurements using ECH2O EC-5, TE and 5TE sensors

    Science.gov (United States)

    Rosenbaum, Ulrike; Huisman, Sander; Vrba, Jan; Vereecken, Harry; Bogena, Heye

    2010-05-01

    For a monitoring of dynamic spatiotemporal soil moisture patterns at the catchment scale, automated and continuously measuring systems that provide spatial coverage and high temporal resolution are needed. Promising techniques like wireless sensor networks (e.g. SoilNet) have to integrate low-cost electromagnetic soil water content sensors [1], [2]. However, the measurement accuracy of such sensors is often deteriorated by effects of temperature and soil bulk electrical conductivity. The objective of this study is to derive and validate correction functions for such temperature and electrical conductivity effects for the ECH2O EC-5, TE and 5TE sensors. We used dielectric liquids with known dielectric properties for two different laboratory experiments. In the first experiment, the temperature of eight reference liquids with permittivity ranging from 7 to 42 was varied from 5 to 40°C. All sensor types showed an underestimation of permittivity for low temperatures and an overestimation for high temperatures. In the second experiment, the conductivity of the reference liquids was increased by adding NaCl. The highest deviations occurred for high permittivity and electrical conductivity between ~0.8 and 1.5 dS/m (underestimation from 8 to 16 permittivity units depending on sensor type). For higher electrical conductivity (2.5 dS/m), the permittivity was overestimated (10 permittivity units for the EC-5 and 7 for the 5TE sensor). Based on these measurements on reference liquids, we derived empirical correction functions that are able to correct thermal and conductivity effects on measured sensor response. These correction functions were validated using three soil samples (coarse sand, silty clay loam and bentonite). For the temperature correction function, the results corresponded better with theoretical predictions after correction for temperature effects on the sensor circuitry. It was also shown that the application of the conductivity correction functions improved

  2. Laboratory Performance of Five Selected Soil Moisture Sensors Applying Factory and Own Calibration Equations for Two Soil Media of Different Bulk Density and Salinity Levels

    Science.gov (United States)

    Matula, Svatopluk; Báťková, Kamila; Legese, Wossenu Lemma

    2016-01-01

    Non-destructive soil water content determination is a fundamental component for many agricultural and environmental applications. The accuracy and costs of the sensors define the measurement scheme and the ability to fit the natural heterogeneous conditions. The aim of this study was to evaluate five commercially available and relatively cheap sensors usually grouped with impedance and FDR sensors. ThetaProbe ML2x (impedance) and ECH2O EC-10, ECH2O EC-20, ECH2O EC-5, and ECH2O TE (all FDR) were tested on silica sand and loess of defined characteristics under controlled laboratory conditions. The calibrations were carried out in nine consecutive soil water contents from dry to saturated conditions (pure water and saline water). The gravimetric method was used as a reference method for the statistical evaluation (ANOVA with significance level 0.05). Generally, the results showed that our own calibrations led to more accurate soil moisture estimates. Variance component analysis arranged the factors contributing to the total variation as follows: calibration (contributed 42%), sensor type (contributed 29%), material (contributed 18%), and dry bulk density (contributed 11%). All the tested sensors performed very well within the whole range of water content, especially the sensors ECH2O EC-5 and ECH2O TE, which also performed surprisingly well in saline conditions. PMID:27854263

  3. Analysis of Well ER-EC-5 Testing, Western Pahute Mesa-Oasis Valley FY 2000 Testing Program

    Energy Technology Data Exchange (ETDEWEB)

    None

    2002-09-30

    This report documents the analysis of the data collected for Well ER-EC-5 during the Western Pahute Mesa - Oasis Valley (WPM-OV) well development and testing program that was conducted during fiscal year (FY) 2000. The data collection for that program is documented in Appendix A, Western Pahute Mesa - Oasis Valley, Well ER-EC-5 Data Report for Development and Hydraulic Testing.

  4. Phase diagrams of ZnTe-HgTe-Te and ZnTe-CdTe-HgTe-Te systems

    International Nuclear Information System (INIS)

    Andrukhiv, A.M.; Litvak, A.M.; Mironov, K.E.

    1992-01-01

    ZnTe-HgTe-Te system liquidus surface is investigated and solid solution layers are produced in this system by the method of liquid-phase epitaxy (LPE). The theoretical analysis of experimental and theoretical data allows to calculate the diagram of ZnTe-CdTe-HgTe-Te system fusibility. A significant effect of elastic stresses of the epitaxial layer, grown on CdTe substrate, on the process of LPE of solid solutions is established

  5. AsTeRICS.

    Science.gov (United States)

    Drajsajtl, Tomáš; Struk, Petr; Bednárová, Alice

    2013-01-01

    AsTeRICS - "The Assistive Technology Rapid Integration & Construction Set" is a construction set for assistive technologies which can be adapted to the motor abilities of end-users. AsTeRICS allows access to different devices such as PCs, cell phones and smart home devices, with all of them integrated in a platform adapted as much as possible to each user. People with motor disabilities in the upper limbs, with no cognitive impairment, no perceptual limitations (neither visual nor auditory) and with basic skills in using technologies such as PCs, cell phones, electronic agendas, etc. have available a flexible and adaptable technology which enables them to access the Human-Machine-Interfaces (HMI) on the standard desktop and beyond. AsTeRICS provides graphical model design tools, a middleware and hardware support for the creation of tailored AT-solutions involving bioelectric signal acquisition, Brain-/Neural Computer Interfaces, Computer-Vision techniques and standardized actuator and device controls and allows combining several off-the-shelf AT-devices in every desired combination. Novel, end-user ready solutions can be created and adapted via a graphical editor without additional programming efforts. The AsTeRICS open-source framework provides resources for utilization and extension of the system to developers and researches. AsTeRICS was developed by the AsTeRICS project and was partially funded by EC.

  6. Ga-Bi-Te system

    International Nuclear Information System (INIS)

    Rustamov, P.G.; Seidova, N.A.; Shakhbazov, M.G.; AN Azerbajdzhanskoj SSR, Baku. Inst. Neorganicheskoj i Fizicheskoj Khimii)

    1976-01-01

    To elucidate the nature of interaction in the system Ga-Bi-Te, a study has been made of sections GaTe-Bi 2 Te 3 , Ga 2 Te 3 -Bi, GaTe-Bi and Bi 2 Te 3 -Ga. The alloys have been prepared by direct melting of the components or their alloys with subsequent homogenizin.o annealing at 400 deg C. The study has been made by the methods of differential thermal, microstructural analysis and by microhardness measurements. On the basis of literature data and data obtained a projection of the liquidus surface of the phase diagram for the system Ga-Bi-Te has been constructed. In the ternary system there are 17 curves of monovariant equilibrium dividing the liquidus into 10 fields of primary crystallization of phases, 9 points of non-variant equilibrium of which 4 points are triple eutectics and 5 points are triple peritectics

  7. Growth And Characterization Of LPE CdHgTe/CdZnTe/CdZnTe Structure

    Science.gov (United States)

    Pelliciari, B.; Chamonal, J. P.; Destefanis, G. L.; Dicioccio, L.

    1988-05-01

    The liquid phase epitaxial technique is used to grow Hgl_x Cdx Te (x = .23) from a Te - rich solution onto a Cdl_y ZnyTe (y = .04) buffer layer grown from a Te-rich solution onto a Cdi_yZnyTe bulk substrate in an open tube multibin horizontal slider apparatus.Growth conditions and physical characterizations of both the buffer layer and the CdHgTe layer are given ; electrical properties of the CdHgTe layer are also presen-ted. PV detectors were successfully obtained on such a structure using an ion-implanted technology and their characteristics at 77 K for a 10.1 ,um cut-off wavelength are given.

  8. Selenium Se and tellurium Te

    International Nuclear Information System (INIS)

    Busev, A.I.; Tiptsova, V.G.; Ivanov, V.M.

    1978-01-01

    The basic methods for determining selenium and tellurium in various objects are presented. The bichromatometric determination of Te in cadmium, zinc and mercury tellurides is based on oxidation of Te(4) to (6) in H 2 SO 4 with potassium bichromate. In steels, Te is determined photometrically with the aid of KI. The determination is hindered by Fe(3), Cu(2), Bi(3) and Se(4) ions, which must be separated. The extraction-photometric determination of Te in native sulfur is carried out with the aid of 5-mercapto-3-(naphthyl-2)-1,3,4-thiadiazolthione-2 (pH=4.8-5.0). The dyed complex is readily extracted with chloroform and benzene. The spectrophotometric determination of Te in selenium is performed with the aid of 3,5-diphenylpyrazoline-1-dithiocarbamate of sodium. Te is determined in commercial indium, arsenic and their semiconductor compounds photometrically with the aid of copper diethyldithiocarbamate. The method permits determining 5x10 -5 % Te in a weighed amount of 0.5 g. The chloride complex of Te(4) with diantipyriodolpropylmethane is quantitatively extracted with dichloroethane from hydrochloric acid solutions. Thus, any amounts of Te can be separated from Se and determined photometrically. The extraction-photometric determination of Te in commercial lead and bismuth is carried out with the aid of pyrazolone derivatives, in commercial copper with the aid of diantipyridolpropylmethane, and in ores (more than 0.01% Te) with the aid of bismuthol 2. Also described is the extraction-polarographic determination of Te in sulfide ores

  9. Te/C nanocomposites for Li-Te Secondary Batteries

    Science.gov (United States)

    Seo, Jeong-Uk; Seong, Gun-Kyu; Park, Cheol-Min

    2015-01-01

    New battery systems having high energy density are actively being researched in order to satisfy the rapidly developing market for longer-lasting mobile electronics and hybrid electric vehicles. Here, we report a new Li-Te secondary battery system with a redox potential of ~1.7 V (vs. Li+/Li) adapted on a Li metal anode and an advanced Te/C nanocomposite cathode. Using a simple concept of transforming TeO2 into nanocrystalline Te by mechanical reduction, we designed an advanced, mechanically reduced Te/C nanocomposite electrode material with high energy density (initial discharge/charge: 1088/740 mA h cm-3), excellent cyclability (ca. 705 mA h cm-3 over 100 cycles), and fast rate capability (ca. 550 mA h cm-3 at 5C rate). The mechanically reduced Te/C nanocomposite electrodes were found to be suitable for use as either the cathode in Li-Te secondary batteries or a high-potential anode in rechargeable Li-ion batteries. We firmly believe that the mechanically reduced Te/C nanocomposite constitutes a breakthrough for the realization and mass production of excellent energy storage systems.

  10. Aardkastanje, onopvallend en te weinig om te eten

    NARCIS (Netherlands)

    Spruijt, T.

    2010-01-01

    Hij staat vanaf half juni volop in bloei, maar wordt door weinigen gezien. Hoewel een zoektocht op Google anders doet vermoeden, wordt hij niet meer gegeten. De Aardkastanje is daarvoor te onopvallend en te zeldzaam in Nederland. Toch is het een bijzondere schermbloem.

  11. PbTe mechanosynthesis from PbO and Te

    International Nuclear Information System (INIS)

    Rojas-Chavez, Hugo; Diaz-de la Torre, Sebastian; Jaramillo-Vigueras, David; Plascencia, Gabriel

    2009-01-01

    Experimental results concerning the mechanosynthesis (MSY), of PbTe from the PbO-Te powder system, at room temperature an atmospheric conditions are reported. XRD results for samples milled for and after 5.4 ks only show PbTe diffraction peaks; neither Te nor PbO or any other solid phase were detected. Particle size and morphology, was followed by SEM observations. Phase evolution and quantification was monitored by Rietveld refinements of the X-ray diffraction data. It was found that the use of lead oxide as a component of the mechanosynthesis system reduces milling time with respect to the Pb-Te metallic system with mechanical alloying.

  12. The quadrupole interaction of 125Te and 129I in polycrystalline Te and in Te single crystals

    International Nuclear Information System (INIS)

    Langouche, G.; Rossum, M. van; Schmidt, K.P.; Coussement, R.

    1975-01-01

    Single crystals as hosts for Te and I sources were used in a study of Te. The Moessbauer spectra of 125 Te and 129 I in polycrystalline Te at liquid He temperature are given. Also presented are the Moessbauer spectra of 125 Te in a Te single crystal for the gamma ray parallel to the c-axis and perpendicular to the c-axis of the crystal at liquid He temperature. (Z.S.)

  13. Bouwlogistieke innovaties weerbarstig te implementeren

    NARCIS (Netherlands)

    Ludema, M.W.; Vries, A.M.R.

    2015-01-01

    Toelevering van bouwmaterialen aan bouwprojecten is complex en verregaande gesegregeerd. De bouwsector staat voor een kans te innoveren op het vlak van de bouwlogistiek. In het verleden is ervaring opgedaan met ‘best-practices’ die voldoende kansen bieden de noodzakelijk innovatie door te voeren.

  14. CdTe as a passivating layer in CdTe/HgCdTe heterostructures

    International Nuclear Information System (INIS)

    Virt, I. S.; Kurilo, I. V.; Rudyi, I. A.; Sizov, F. F.; Mikhailov, N. N.; Smirnov, R. N.

    2008-01-01

    CdTe/Hg 1-x Cd x Te heterostructures are studied. In the structures, CdTe is used as a passivating layer deposited as a polycrystal or single crystal on a single-crystal Hg 1-x Cd x Te film. The film and a passivating layer were obtained in a single technological process of molecular beam epitaxy. The structure of passivating layers was studied by reflection high-energy electron diffraction, and the effect of the structure of the passivating layer on the properties of the active layer was studied by X-ray diffractometry. Mechanical properties of heterostructures were studied by the microhardness method. Electrical and photoelectrical parameters of the Hg 1-x Cd x Te films are reported.

  15. Schreibende Messgeräte

    Science.gov (United States)

    Plaßmann, Wilfried

    Die schreibenden Messgeräte werden hauptsächlich eingesetzt, um Vorgänge aufzuzeichnen und zu dokumentieren, die sich im Minuten- und Stunden-Bereich abspielen. Sie sind weitgehend durch Oszilloskope oder elektronische Geräte ähnlich einem Oszilloskop ersetzt worden, die entsprechend für Langzeitaufnahmen ausgelegt sind. Der Vorteil dieser Geräte gegenüber den schreibenden Messgeräten ist der, dass die Daten dauerhaft gespeichert sind, einschließlich der notwendigen Kenngrößen wie Zeitmaßstab, Amplitude, Datum, Aufzeichnungsgerät usw., und sich in dieser Form beliebig oft ausdrucken und vor allem direkt weiterverarbeiten lassen. Weiterhin entfallen die Probleme mit der Mechanik, dem Papier und den Schreibstiften. Deshalb folgt hier eine nur kurze Darstellung der Geräte.

  16. Gamma transitions in 127Te

    International Nuclear Information System (INIS)

    Batista, Wagner Fonseca; Zamboni, Cibele Bugno

    2009-01-01

    This study of the 127 Te β - decay was carried out by means of gamma spectroscopy measurements using high resolution Ge detector, in the region from 150 keV up to 1000 keV, aiming to get a better understanding of the 127 Te nuclear structure. Several gamma transitions were confirmed when compared with those published in the last compilation. These data resulting in lower uncertainty. (author)

  17. Optical phonons in PbTe/CdTe multilayer heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Novikova, N. N.; Yakovlev, V. A. [Russian Academy of Sciences, Institute for Spectroscopy (Russian Federation); Kucherenko, I. V., E-mail: kucheren@sci.lebedev.ru [Russian Academy of Sciences, Lebedev Physical Institute (Russian Federation); Karczewski, G. [Polish Academy of Sciences, Institute of Physics (Poland); Aleshchenko, Yu. A.; Muratov, A. V.; Zavaritskaya, T. N.; Melnik, N. N. [Russian Academy of Sciences, Lebedev Physical Institute (Russian Federation)

    2015-05-15

    The infrared reflection spectra of PbTe/CdTe multilayer nanostructures grown by molecular-beam epitaxy are measured in the frequency range of 20–5000 cm{sup −1} at room temperature. The thicknesses and high-frequency dielectric constants of the PbTe and CdTe layers and the frequencies of the transverse optical (TO) phonons in these structures are determined from dispersion analysis of the spectra. It is found that the samples under study are characterized by two TO phonon frequencies, equal to 28 and 47 cm{sup −1}. The first frequency is close to that of TO phonons in bulk PbTe, and the second is assigned to the optical mode in structurally distorted interface layers. The Raman-scattering spectra upon excitation with the radiation of an Ar{sup +} laser at 514.5 nm are measured at room and liquid-nitrogen temperatures. The weak line at 106 cm{sup −1} observed in these spectra is attributed to longitudinal optical phonons in the interface layers.

  18. Superstrengthening Bi2Te3 through Nanotwinning

    Science.gov (United States)

    Li, Guodong; Aydemir, Umut; Morozov, Sergey I.; Wood, Max; An, Qi; Zhai, Pengcheng; Zhang, Qingjie; Goddard, William A.; Snyder, G. Jeffrey

    2017-08-01

    Bismuth telluride (Bi2Te3 ) based thermoelectric (TE) materials have been commercialized successfully as solid-state power generators, but their low mechanical strength suggests that these materials may not be reliable for long-term use in TE devices. Here we use density functional theory to show that the ideal shear strength of Bi2Te3 can be significantly enhanced up to 215% by imposing nanoscale twins. We reveal that the origin of the low strength in single crystalline Bi2Te3 is the weak van der Waals interaction between the Te1 coupling two Te 1 - Bi - Te 2 - Bi - Te 1 five-layer quint substructures. However, we demonstrate here a surprising result that forming twin boundaries between the Te1 atoms of adjacent quints greatly strengthens the interaction between them, leading to a tripling of the ideal shear strength in nanotwinned Bi2Te3 (0.6 GPa) compared to that in the single crystalline material (0.19 GPa). This grain boundary engineering strategy opens a new pathway for designing robust Bi2Te3 TE semiconductors for high-performance TE devices.

  19. Comprehensive thermodynamic description of the quasiternary system PbTe-GeTe-SnTe

    International Nuclear Information System (INIS)

    Yashina, Lada V.; Leute, Volkmar; Shtanov, Vladimir I.; Schmidtke, Heinrich M.; Neudachina, Vera S.

    2006-01-01

    The equilibrium phase diagram of the quasiternary system PbTe-GeTe-SnTe was studied experimentally in the ranges of spinodal demixing and (solid + liquid) equilibrium by means of X-ray diffraction (XRD), electron microprobe analysis (EMA) and differential thermal analysis (DTA). A model description of the phase diagram was done on the base of composition dependent interaction parameters, which were determined for the solid and the liquid phases. The interaction parameters for the quasibinary systems were recalculated in order to reach better correlation between all experimental data. It was shown that the quasiternary phase diagram can be principally described using the interaction parameters for the quasibinary subsystems, but an additional ternary interaction parameter has also to be considered. The local structure of the quasiternary solid solution is described by a four-particle cluster model. Due to the tendency of the solid solution to demix, the probability of the (GeGeGe)Te cluster was found to be higher and that of the (PbGeGe)Te cluster to be lower than it is expected for the purely statistical distribution of the clusters

  20. M rate at TE. Monitoring at TeV energies

    Energy Technology Data Exchange (ETDEWEB)

    Dorner, Daniela [Universitaet Wuerzburg (Germany); Bretz, Thomas [RWTH Aachen (Germany); Gonzalez, Magdalena; Alfaro, Ruben [Universidad Nacional Autonoma de Mexico (Mexico); Tovmassian, Gagik [Instituto de Astronomia Sede Ensenada (Mexico)

    2016-07-01

    A dedicated long-term monitoring programm at TeV energies has been started by the FACT project about four years ago. Being limited to one site, gaps due to the rotation of the Earth remain in the measured light curves. This makes it difficult to study typical variability time scales of few hours to one day. To allow for systematic studies of continuous observations over up to 12 hours, a second telescope is being installed at a site in about six hours distance in longitude. For the M rate at TE (Monitoring at TeV energies) telescope, a mount from a previous experiment is being refurbished and will be equipped with a new camera. Using silicon based photo sensors like in FACT, an excellent and stable performance will be achieved. M rate at TE is a joint project of German and Mexican universities which aims at extending the blazar monitoring to so far unexplored time ranges. In the presentation, the status of this emerging project is reported.

  1. Te hard van stapel gelopen.

    NARCIS (Netherlands)

    W-J. Verhoeven (Willem-Jan)

    2008-01-01

    textabstractHoe goed we ook trachten de samenleving te organiseren, fraude maakt er deel van uit. Dit blijkt uit spraakmakende grote schandalen zoals de Enron-zaak, de Bouwfraude-zaak en de Nigerian letter scams. Maar fraude komt ook op minder geruchtmakende schaal voor, zoals oplichting op

  2. X = S, Se, Te) heterostructures

    KAUST Repository

    Zhang, Qingyun; Schwingenschlö gl, Udo

    2018-01-01

    Using first-principles calculations, we investigate the electronic properties of the two-dimensional GaX/MX2 (M = Mo, W; X = S, Se, Te) heterostructures. Orbital hybridization between GaX and MX2 is found to result in Rashba splitting at the valence

  3. Desorption of Te capping layer from ZnTe (100): Auger spectroscopy ...

    African Journals Online (AJOL)

    ... configurations of tellurium Te (c (2x2)) and Te (c (2x1)) are confirmed by scanning tunneling microscopy (STM). Such a study reveals a phase transition from a rich-Te to a poor-Te surface as the annealing temperature increases. Keywords: Zinc Tellure; solar cells; structural properties; optoelectronics; semiconductors.

  4. S and Te inter-diffusion in CdTe/CdS hetero junction

    Energy Technology Data Exchange (ETDEWEB)

    Enriquez, J. Pantoja [Cuerpo Academico-Energia y Sustentabilidad, Universidad Politecnica de Chiapas, Eduardo J. Selvas S/N, Col. Magisterial, Tuxtla Gutierrez 29010, Chiapas (Mexico); Gomez Barojas, E. [CIDS-ICUAP, Apdo. Postal 1651, 72000 Puebla (Mexico); Silva Gonzalez, R.; Pal, U. [Instituto de Fisica, Benemerita Universidad Autonoma de Puebla, Puebla (Mexico)

    2007-09-22

    Effects of post formation thermal annealing of the CdTe-CdS device on the inter-diffusion of S and Te at the junction in a substrate configuration device have been studied by Auger electron spectroscopy. While the migration of S and Te atoms increases with annealing temperature, the extent of S diffusion is always higher than the diffusion of Te atoms. Inter-diffusion of S and Te causes the formation of CdTe{sub 1-x}S{sub x} ternary compound at the CdTe-CdS interface. (author)

  5. Near-infrared emission bands of TeH and TeD

    Science.gov (United States)

    Fink, E. H.; Setzer, K. D.; Ramsay, D. A.; Vervloet, M.

    1989-11-01

    High-resolution emission spectra of TeH and TeD have been obtained in the region 4200 to 3600 cm -1 using a Bomem DA3.002 Fourier transform spectrometer. Analyses are given for the 0-0 and 1-1 bands of the X 22Π{1}/{2}-X 12Π{3}/{2} system of TeH and for the 0-0 band of TeD. In addition the 2-0 vibrational overtone bands of 130TeH, 128TeH, and 126TeH are observed and analyzed. Accurate molecular constants are given for the first time.

  6. Study of Te Inclusions in CdMnTe Crystals for Nuclear Detector Applications

    International Nuclear Information System (INIS)

    Babalola, O.S.; Bolotnikov, A.; Groza, M.; Hossain, A.; Egarievwe, S.; James, R.; Burger, A.

    2009-01-01

    The concentration, size and spatial distribution of Te inclusions in the bulk of CdMnTe crystals mined from two batches of ingots were studied. An isolated planar layer decorated with Te inclusions was identified in CdMnTe crystals from the second ingot. The internal electric field of a CMT crystal was probed by infrared (IR) imaging employing Pockels electro-optic effect. The effect of an isolated plane of Te inclusions on the internal electric-field distribution within the CdMnTe crystal was studied. Space charge accumulation around the plane of Te inclusions was observed, which was found to be higher when the detector was reverse-biased. The effects of the plane of Te inclusions on the electric-field distribution within the CdMnTe crystal, and the quality of CdMnTe crystals for nuclear detector applications are discussed.

  7. Liquidus surface of the triple reciprocal system PbTe+CdS↔PbS+CdTe

    International Nuclear Information System (INIS)

    Tomashik, Z.F.; Tomashik, V.N.

    1987-01-01

    Using differential-thermal and microstructural analyses and mathematical design interaction in PbTe-CdS system is studied. Liquidus surface of the triple reciprocal system PbTe+CdS↔PbS+CdTe is plotted. It is shown that PbTe-CdS system phase diagram is of eutectic type. Maximal solubility of CdS in PbTe attains 13 mol%, and of PbTe in CdS is not over 1 mol%. Projection of liquidus surface of the PbTe+CdS↔PbS+CdTe triple reciprocal system consists of two primary crystallization fields: CdTe x S 1-x and PbTe x S 1-x solid solutions separated by eutectic line

  8. Solution Grown Se/Te Nanowires: Nucleation, Evolution, and The Role of Triganol Te seeds

    Directory of Open Access Journals (Sweden)

    Shan Xudong

    2009-01-01

    Full Text Available Abstract We have studied the nucleation and growth of Se–Te nanowires (NWs, with different morphologies, grown by a chemical solution process. Through systematic characterization of the Se–Te NW morphology as a function of the Te nanocrystallines (NCs precursor, the relative ratio between Se and Te, and the growth time, a number of significant insights into Se–Te NW growth by chemical solution processes have been developed. Specifically, we have found that: (i the growth of Se–Te NWs can be initiated from either long or short triganol Te nanorods, (ii the frequency of proximal interactions between nanorod tips and the competition between Se and Te at the end of short Te nanorods results in V-shaped structures of Se–Te NWs, the ratio between Se and Te having great effect on the morphology of Se–Te NWs, (iii by using long Te nanorods as seeds, Se–Te NWs with straight morphology were obtained. Many of these findings on Se–Te NW growth can be further generalized and provide very useful information for the rational synthesis of group VI based semiconductor NW compounds.

  9. Electrical properties of MIS devices on CdZnTe/HgCdTe

    Science.gov (United States)

    Lee, Tae-Seok; Jeoung, Y. T.; Kim, Hyun Kyu; Kim, Jae Mook; Song, Jinhan; Ann, S. Y.; Lee, Ji Y.; Kim, Young Hun; Kim, Sun-Ung; Park, Mann-Jang; Lee, S. D.; Suh, Sang-Hee

    1998-10-01

    In this paper, we report the capacitance-voltage (C-V) properties of metal-insulator-semiconductor (MIS) devices on CdTe/HgCdTe by the metalorganic chemical vapor deposition (MOCVD) and CdZnTe/HgCdTe by thermal evaporation. In MOCVD, CdTe layers are directly grown on HgCdTe using the metal organic sources of DMCd and DiPTe. HgCdTe layers are converted to n-type and the carrier concentration, ND is low 1015 cm-3 after Hg-vacancy annealing at 260 degrees Celsius. In thermal evaporation, CdZnTe passivation layers were deposited on HgCdTe surfaces after the surfaces were etched with 0.5 - 2.0% bromine in methanol solution. To investigate the electrical properties of the MIS devices, the C-V measurement is conducted at 80 K and 1 MHz. C-V curve of MIS devices on CdTe/HgCdTe by MOCVD has shown nearly flat band condition and large hysteresis, which is inferred to result from many defects in CdTe layer induced during Hg-vacancy annealing process. A negative flat band voltage (VFB approximately equals -2 V) and a small hysteresis have been observed for MIS devices on CdZnTe/HgCdTe by thermal evaporation. It is inferred that the negative flat band voltage results from residual Te4+ on the surface after etching with bromine in methanol solution.

  10. Partial Pressures of Te2 and Thermodynamic Properties of Ga-Te System

    Science.gov (United States)

    Su, Ching-Hua; Curreri, Peter A. (Technical Monitor)

    2001-01-01

    The partial pressures of Te2 in equilibrium with Ga(1-x)Te(x) samples were measured by optical absorption technique from 450 to 1100 C for compositions, x, between 0.333 and 0.612. To establish the relationship between the partial pressure of Te, and the measured optical absorbance, the calibration runs of a pure Te sample were also conducted to determine the Beer's Law constants. The partial pressures of Te2 in equilibrium with the GaTe(s) and Ga2Te3(s)compounds, or the so-called three-phase curves, were established. These partial pressure data imply the existence of the Ga3Te4(s) compound. From the partial pressures of Te2 over the Ga-Te melts, partial molar enthalpy and entropy of mixing for Te were derived and they agree reasonable well with the published data. The activities of Te in the Ga-Te melts were also derived from the measured partial pressures of Te2. These data agree well with most of the previous results. The possible reason for the high activity of Te measured for x less than 0.60 is discussed.

  11. Thermochemical properties of silver tellurides including empressite (AgTe) and phase diagrams for Ag-Te and Ag-Te-O

    Science.gov (United States)

    Voronin, Mikhail V.; Osadchii, Evgeniy G.; Brichkina, Ekaterina A.

    2017-10-01

    This study compiles original experimental and literature data on the thermodynamic properties (ΔfG°, S°, ΔfH°) of silver tellurides (α-Ag2Te, β-Ag2Te, Ag1.9Te, Ag5Te3, AgTe) obtained by the method of solid-state galvanic cell with the RbAg4I5 and AgI solid electrolytes. The thermodynamic data for empressite (AgTe, pure fraction from Empress Josephine Mine, Colorado USA) have been obtained for the first time by the electrochemical experiment with the virtual reaction Ag + Te = AgTe. The Ag-Te phase diagrams in the T - x and log fTe2 (gas) - 1/ T coordinates have been refined, and the ternary Ag-Te-O diagrams with Ag-Te-TeO2 (paratellurite) composition range have been calculated.

  12. n-(CdMgTe/CdTe)/(p-(CdTe/ZnCdTe/ZnTe)/p-GaAs heterostructure diode for photosensor applications

    Science.gov (United States)

    Yahia, I. S.; AlFaify, S.; Abutalib, M. M.; Chusnutdinow, S.; Wojtowicz, T.; Karczewski, G.; Yakuphanoglu, F.; Al-Bassam, A.; El-Naggar, A. M.; El-Bashir, S. M.

    2016-05-01

    High quality n-(CdMgTe:I/n-CdTe:I)/(p-CdTe:N/p-ZnCdTe:N/p-ZnTe:N)/p-GaAs heterojunction diodes have been fabricated by molecular beam epitaxial growth. The illumination effect on the complex impedance and conductivity of heterostructure diode was investigated. The illumination intensities were taken up to the 200 mW/cm2 with frequency range of 42 Hz to 1 MHz. The observed real and imaginary parts of the complex impedance were strongly dependent on the illumination frequency. The inverse relation was observed between the illumination intensity and the complex impedance. The relaxation mechanism of the diode was analyzed by the Cole-Cole plots. The radius of the Cole-Cole curve decreases with increasing illumination intensity. This suggests a mechanism of illumination dependent on the relaxation process. It is also found that the conductivity increases linearly with increasing the illumination intensity. We can conclude that the new design heterostructure diode in our work is a good candidate in photodetector and optoelectronic applications.

  13. TE Wave Measurement and Modeling

    CERN Document Server

    Sikora, John P; Sonnad, Kiran G; Alesini, David; De Santis, Stefano

    2013-01-01

    In the TE wave method, microwaves are coupled into the beam-pipe and the effect of the electron cloud on these microwaves is measured. An electron cloud (EC) density can then be calculated from this measurement. There are two analysis methods currently in use. The first treats the microwaves as being transmitted from one point to another in the accelerator. The second more recent method, treats the beam-pipe as a resonant cavity. This paper will summarize the reasons for adopting the resonant TE wave analysis as well as give examples from CESRTA and DA{\\Phi}NE of resonant beam-pipe. The results of bead-pull bench measurements will show some possible standing wave patterns, including a cutoff mode (evanescent) where the field decreases exponentially with distance from the drive point. We will outline other recent developments in the TE wave method including VORPAL simulations of microwave resonances, as well as the simulation of transmission in the presence of both an electron cloud and magnetic fields.

  14. Highest-order optical phonon-mediated relaxation in CdTe/ZnTe quantum dots

    International Nuclear Information System (INIS)

    Masumoto, Yasuaki; Nomura, Mitsuhiro; Okuno, Tsuyoshi; Terai, Yoshikazu; Kuroda, Shinji; Takita, K.

    2003-01-01

    The highest 19th-order longitudinal optical (LO) phonon-mediated relaxation was observed in photoluminescence excitation spectra of CdTe self-assembled quantum dots grown in ZnTe. Hot excitons photoexcited highly in the ZnTe barrier layer are relaxed into the wetting-layer state by emitting multiple LO phonons of the barrier layer successively. Below the wetting-layer state, the LO phonons involved in the relaxation are transformed to those of interfacial Zn x Cd 1-x Te surrounding CdTe quantum dots. The ZnTe-like and CdTe-like LO phonons of Zn x Cd 1-x Te and lastly acoustic phonons are emitted in the relaxation into the CdTe dots. The observed main relaxation is the fast relaxation directly into CdTe quantum dots and is not the relaxation through either the wetting-layer quantum well or the band bottom of the ZnTe barrier layer. This observation shows very efficient optical phonon-mediated relaxation of hot excitons excited highly in the ZnTe conduction band through not only the ZnTe extended state but also localized state in the CdTe quantum dots reflecting strong exciton-LO phonon interaction of telluride compounds

  15. Piezoelectric effect in CdTe/CdMnTe and CdTe/CdZnTe quantum wells

    International Nuclear Information System (INIS)

    Andre, Regis

    1994-01-01

    Materials with zinc-blende type structure are piezoelectric: any strain along a polar axis generates an electrical polarisation. Strained quantum wells of cubic II-VI or III-V semiconductors, grown along [111] or [112] axis, exhibit a strong built-in piezo-electric field (100 kV/cm for 1% strains). Such structures are very promising for applications to optical modulation, but it is necessary to study first the physical properties of piezoelectric heterostructures before they can be used in optical devices. For this purpose, we have performed an optical study of strained CdTe/CdMnTe or CdTe/CdZnTe quantum wells coherently grown by molecular beam epitaxy on [111] or [112] oriented substrates. Effects of piezoelectric field on optical and electronic properties of quantum wells have been analyzed in terms of the envelop function model, taking into account the effects of biaxial strains for [hhk] growth axis. Moreover, we have proposed an original way of measuring piezoelectric field in strained quantum wells, and we have used this method to show that CdTe exhibits strong non-linearities for piezoelectric field versus strain. This effect has never been mentioned before. We have also performed measurements of the piezoelectric coefficient e14 under high hydrostatic pressure inducing strains up to 2%, which shows that part of the non-linear effect is a volume effect. We have also studied the effects of the piezoelectric field on excitons in quantum wells. The binding energy decreases slightly when the electric field increases, but the oscillator strength, for the fundamental transition, decreases dramatically with the overlap of the envelope wavefunctions of electrons and holes. We have performed a modelization of an exciton in a piezoelectric quantum well using two variational parameters. This model provides an accurate calculation of excitonic absorption. Our experimental and theoretical results are in very good agreement, without any fitting parameters, for a large

  16. Partial enthalpies of Bi and Te in Bi-Te melts and of In and Te in In-Te melts

    International Nuclear Information System (INIS)

    Yassin, Abeer; Amzil, Abdelhamid; Castanet, Robert

    2000-01-01

    Full text.Calorimetric measurement are reported which allow the enthalpic behaviour of Bi-Te melts to be established. Further work is required, however, to supplement results obtained for In-Te melts. The partial enthalpies of bismuth and tellurium in the Bi-Te melts at 755K and those of indium and tellurium in the In-Te melts at 1010 and 987K were measured at high dilution by direct reaction calorimetry (drop method) with the help of a Tian-Calvet calorimeter. The limiting partial enthalpies of the components were deduced by extrapolation at infinite dilution: Δh f,∞ B i(755K)/KJ.mol -1 = -34.0 and Δh f,∞ Te(755K) /KJ·mol -1 = -24.1 in the Bi-Te melts Δh f,∞ In(1010K) /KJ·mol -1 = -75.9 and Δh f,∞ Te(1010K) /KJ·mol -1 = -47.8 in the In-Te melts Δh f,∞ In(987K) /KJ·mol -1 = -75.2 and Δh f,∞ Te(987K) /KJ·mol -1 = -48.0 in the In-Te melts

  17. Surface passivation for CdTe devices

    Energy Technology Data Exchange (ETDEWEB)

    Reese, Matthew O.; Perkins, Craig L.; Burst, James M.; Gessert, Timothy A.; Barnes, Teresa M.; Metzger, Wyatt K.

    2017-08-01

    In one embodiment, a method for surface passivation for CdTe devices is provided. The method includes adjusting a stoichiometry of a surface of a CdTe material layer such that the surface becomes at least one of stoichiometric or Cd-rich; and reconstructing a crystalline lattice at the surface of the CdTe material layer by annealing the adjusted surface.

  18. Superconducting transition in TlBiTe/sub 2/ and TlTe compounds

    Energy Technology Data Exchange (ETDEWEB)

    Kantser, V G; Popovich, N S; Sidorenko, A S

    1985-10-01

    On the basis of zone structure calculation for TlBiTe/sub 2/ and TlTe it is found that TlBiTe/sub 2/ is a narrow-gap semiconductor and TlTe is a p-metal. At Tsub(c)=0.19 K TlTe is found to experience the superconducting transition. In TlBiTe/sub 2/ superconductivity is not observed to occur up to 0.05 K, since there is a possibility of occupying the high density of states zones because they are remote from actual ones. The earlier discovered superconducting transition in TlBiTe/sub 2/ is inherent in the alien phase of TlTe.

  19. On the mean square displacements (MSD) of Hg and Te in HgTe

    International Nuclear Information System (INIS)

    Madhavan, Y.; Ramachandran, K.

    1989-01-01

    The mean square displacements (MSD) of Hg and Te in the perfect system of HgTe are worked out in the modified rigid ion model of Plumelle and Vandevyver. Also the MSD of Hg and Te neighbours around anion and cation vacancies in HgTe are worked out giving an active role for the vacancy following the theory of Maradudin et al. The results are compared with experimental values. (author)

  20. In situ study on the formation of FeTe

    DEFF Research Database (Denmark)

    Grivel, Jean-Claude; Wulff, Anders Christian; Yue, Zhao

    2011-01-01

    The formation of the FeTe compound from a mixture of Fe and Te powders was studied in situ by means of high-energy synchrotron X-ray diffraction. FeTe does not form directly from the starting elements; instead, FeTe2 forms as an intermediate product. During a 2 °C/min heating ramp, Te first reacts...

  1. Designing Diameter-Modulated Heterostructure Nanowires of PbTe/Te by Controlled Dewetting.

    Science.gov (United States)

    Kumar, Abinash; Kundu, Subhajit; Samantaray, Debadarshini; Kundu, Paromita; Zanaga, Daniele; Bals, Sara; Ravishankar, N

    2017-12-13

    Heterostructures consisting of semiconductors with controlled morphology and interfaces find applications in many fields. A range of axial, radial, and diameter-modulated nanostructures have been synthesized primarily using vapor phase methods. Here, we present a simple wet chemical routine to synthesize heterostructures of PbTe/Te using Te nanowires as templates. A morphology evolution study for the formation of these heterostructures has been performed. On the basis of these control experiments, a pathway for the formation of these nanostructures is proposed. Reduction of a Pb precursor to Pb on Te nanowire templates followed by interdiffusion of Pb/Te leads to the formation of a thin shell of PbTe on the Te wires. Controlled dewetting of the thin shell leads to the formation of cube-shaped PbTe that is periodically arranged on the Te wires. Using control experiments, we show that different reactions parameters like rate of addition of the reducing agent, concentration of Pb precursor and thickness of initial Te nanowire play a critical role in controlling the spacing between the PbTe cubes on the Te wires. Using simple surface energy arguments, we propose a mechanism for the formation of the hybrid. The principles presented are general and can be exploited for the synthesis of other nanoscale heterostructures.

  2. Bacon, Lettuce and Tomato: een strategie om leerlingen te helpen hun antwoorden op examenvragen te verbeteren

    NARCIS (Netherlands)

    Kneppers, L.

    2014-01-01

    In Tutor2u las ik dat in een workshop een strategie was besproken om leerlingen te helpen hun examenantwoorden vollediger en juister te formuleren. De strategie heet in Groot Brittannië BLT, voor leerlingen daar gemakkelijk te onthouden vanwege de populaire Bacon, Lettuce en Tomato sandwich.

  3. Electronic structures and stability of Ni/Bi2Te3 and Co/Bi2Te3 interfaces

    KAUST Repository

    Xiong, Ka; Wang, Weichao; Alshareef, Husam N.; Gupta, Rahul P.; White, John B.; Gnade, Bruce E.; Cho, Kyeongjae

    2010-01-01

    We investigate the electronic structures and stability for Ni/Bi 2Te3, NiTe/Bi2Te3, Co/Bi 2Te3 and CoTe2/Bi2Te3 interfaces by first-principles calculations. It is found that the surface termination strongly affects the band alignment. Ni and Co are found to form Ohmic contacts to Bi2Te3. The interface formation energy for Co/Bi2Te3 interfaces is much lower than that of Ni/Bi2Te3 interfaces. Furthermore, we found that NiTe on Bi2Te3 is more stable than Ni, while the formation energies for Co and CoTe2 on Bi2Te3 are comparable. © 2010 IOP Publishing Ltd.

  4. Electronic structures and stability of Ni/Bi2Te3 and Co/Bi2Te3 interfaces

    International Nuclear Information System (INIS)

    Xiong Ka; Wang Weichao; Alshareef, Husam N; Gupta, Rahul P; Gnade, Bruce E; Cho, Kyeongjae; White, John B

    2010-01-01

    We investigate the electronic structures and stability for Ni/Bi 2 Te 3 , NiTe/Bi 2 Te 3 , Co/Bi 2 Te 3 and CoTe 2 /Bi 2 Te 3 interfaces by first-principles calculations. It is found that the surface termination strongly affects the band alignment. Ni and Co are found to form Ohmic contacts to Bi 2 Te 3 . The interface formation energy for Co/Bi 2 Te 3 interfaces is much lower than that of Ni/Bi 2 Te 3 interfaces. Furthermore, we found that NiTe on Bi 2 Te 3 is more stable than Ni, while the formation energies for Co and CoTe 2 on Bi 2 Te 3 are comparable.

  5. Electronic structures and stability of Ni/Bi2Te3 and Co/Bi2Te3 interfaces

    KAUST Repository

    Xiong, Ka

    2010-03-04

    We investigate the electronic structures and stability for Ni/Bi 2Te3, NiTe/Bi2Te3, Co/Bi 2Te3 and CoTe2/Bi2Te3 interfaces by first-principles calculations. It is found that the surface termination strongly affects the band alignment. Ni and Co are found to form Ohmic contacts to Bi2Te3. The interface formation energy for Co/Bi2Te3 interfaces is much lower than that of Ni/Bi2Te3 interfaces. Furthermore, we found that NiTe on Bi2Te3 is more stable than Ni, while the formation energies for Co and CoTe2 on Bi2Te3 are comparable. © 2010 IOP Publishing Ltd.

  6. Infrared and near infrared emission spectra of TeH and TeD

    Science.gov (United States)

    Yu, Shanshan; Shayesteh, Alireza; Fu, Dejian; Bernath, Peter F.

    2005-04-01

    The vibration-rotation emission spectra for the X2Π ground state and the near infrared emission spectra of the X2Π 1/2- X2Π 3/2 system of the TeH and TeD free radicals have been measured at high resolution using a Fourier transform spectrometer. TeH and TeD were generated in a tube furnace with a DC discharge of a flowing mixture of argon, hydrogen (or deuterium), and tellurium vapor. In the infrared region, for the X2Π 3/2 spin component we observed the 1-0, 2-1, and 3-2 vibrational bands for most of the eight isotopologues of TeH and the 1-0 and 2-1 bands for three isotopologues of TeD. For the X2Π 1/2- X2Π 3/2 transition, we observed the 0-0 and 1-1 bands for TeH and the 0-0, 1-1, and 2-2 bands for TeD. Except for a few lines, the tellurium isotopic shift was not resolved for the X2Π 1/2- X2Π 3/2 transitions of TeH and TeD. Local perturbations with Δ v = 2 between the two spin components of the X2Π state of TeH were found: X2Π 1/2, v = 0 with X2Π 3/2, v = 2; X2Π 1/2, v = 1 with X2Π 3/2, v = 3. The new data were combined with the previous data from the literature and two kinds of fits (Hund's case (a) and Hund's case (c)) were carried out for each of the 10 observed isotopologues: 130TeD, 128TeD, 126TeD, 130TeH, 128TeH, 126TeH, 125TeH, 124TeH, 123TeH, and 122TeH.

  7. High mobility 2D electron gas in CdTe/CdMgTe heterostructures

    International Nuclear Information System (INIS)

    Karczewski, G.; Jaroszynski, J.; Kurowski, M.; Barcz, A.; Wojtowicz, T.; Kossut, J.

    1997-01-01

    We report on iodine doping of molecular beam epitaxy (MBE)-grown Cd(Mn)Te quasi-bulk films and modulation-doped CdTe/Cd 1-y Mg y Te two-dimensional (2D) single quantum well structures. Modulation doping with iodine of CdTe/Cd 1-y Mg y Te structures resulted in fabrication of a 2D electron gas with mobility exceeding 10 5 cm 2 /(Vs). This is the highest mobility reported in wide-gap II-VI materials

  8. Analysis of CdS/CdTe devices incorporating a ZnTe:Cu/Ti Contact

    International Nuclear Information System (INIS)

    Gessert, T.A.; Asher, S.; Johnston, S.; Young, M.; Dippo, P.; Corwine, C.

    2007-01-01

    High-performance CdS/CdTe photovoltaic devices can be produced using a ZnTe:Cu/Ti back contact deposited onto the CdTe layer. We observe that prolonged exposure of the ZnTe:Cu and Ti sputtering targets to an oxygen-containing plasma significantly reduces device open-circuit voltage and fill factor. High-resolution compositional analysis of these devices reveals that Cu concentration in the CdTe and CdS layers is lower for devices with poor performance. Capacitance-voltage analysis and related numerical simulations indicate that the net acceptor concentration in the CdTe is also lower for devices with poor performance. Photoluminescence analyses of the junction region reveal that the intensity of a luminescent peak associated with a defect complex involving interstitial Cu (Cu i ) and oxygen on Te (O Te ) is reduced in devices with poor performance. Combined with thermodynamic considerations, these results suggest that oxygen incorporation into the ZnTe:Cu sputtering target reduces the ability of sputtered ZnTe:Cu film to diffuse Cu into the CdTe

  9. Self-Catalyzed CdTe Wires

    Directory of Open Access Journals (Sweden)

    Tom Baines

    2018-04-01

    Full Text Available CdTe wires have been fabricated via a catalyst free method using the industrially scalable physical vapor deposition technique close space sublimation. Wire growth was shown to be highly dependent on surface roughness and deposition pressure, with only low roughness surfaces being capable of producing wires. Growth of wires is highly (111 oriented and is inferred to occur via a vapor-solid-solid growth mechanism, wherein a CdTe seed particle acts to template the growth. Such seed particles are visible as wire caps and have been characterized via energy dispersive X-ray analysis to establish they are single phase CdTe, hence validating the self-catalysation route. Cathodoluminescence analysis demonstrates that CdTe wires exhibited a much lower level of recombination when compared to a planar CdTe film, which is highly beneficial for semiconductor applications.

  10. A thermodynamic stability of bulk and epitaxial CdHgTe, ZnHgTe and MnHgTe solid solutions

    International Nuclear Information System (INIS)

    Dejbuk, V.G.; Dremlyuzhenko, S.G.; Ostapov, S.Eh.

    2005-01-01

    A thermodynamics of Cd 1-x Hg x Te, Zn x Hg 1-x Te and Mg x Hg 1-x Te alloys has been investigated for a delta-lattice parameter model. The phase diagrams obtained show the stability of Cd 1-x Hg x Te, Zn x Hg 1-x Te in the whole range of compositions, alongside with a miscibility gap for Mn x Hg 1-x Te being of 0.35 x Hg 1-x Te/CdTe and Mn x Hg 1-x Te/Cd 0.96 Zn 0.04 Te epitaxial films result in lowering critical temperatures and narrowing the miscibility gap [ru

  11. A new type of one-dimensional compound: Structure of Nb4(Te2)4Te4I

    International Nuclear Information System (INIS)

    Deng Shuiquan; Zhuang Honghui; Lu Canzhong; Huang Jinshun; Huang Jingling

    1993-01-01

    The new infinite-chain niobium telluride iodide has been prepared by reaction of the elements at 893 K. Nb 4 (Te 2 ) 4 Te 4 I represents a new one-dimensional structure type. The structure consists of [Nb 4 (Te 2 ) 4 Te 4 I] ∞ chains which are formed by the four-nuclear butterfly cluster units 'Nb 4 (Te 2 ) 4 Te 4 ' with the I atoms bridging between different cluster units. (orig.)

  12. Precipitation of Ag2Te in the thermoelectric material AgSbTe2

    International Nuclear Information System (INIS)

    Sugar, Joshua D.; Medlin, Douglas L.

    2009-01-01

    The microstructure of AgSbTe 2 , prepared by solidification, is investigated using electron microscopy. During solidification and thermal treatment, the material separates into a two-phase mixture of a rocksalt phase, which is Ag 22 Sb 28 Te 50 , and silver telluride, Ag 2 Te. Ag 2 Te formation results either from eutectic solidification (large lamellar structures), or by solid-state precipitation (fine-scale particles). The crystal structure of the AgSbTe 2 phase determined by electron diffraction is consistent with a rocksalt structure that has a disordered cation sublattice. A preferred crystallographic orientation relationship at the interface between the matrix and the low-temperature monoclinic Ag 2 Te phase is defined and discussed. This orientation relationship is observed for both second-phase morphologies. In both cases, the orientation relationship originates from a topotactic (cube-on-cube) alignment of the Te sublattices in the initially cubic Ag 2 Te and the matrix at elevated temperature. This Te sublattice alignment is retained as the Ag 2 Te undergoes a cubic-to-monoclinic transformation during cooling. This orientation relationship is observed for both second-phase morphologies.

  13. Pulsar TeV Halos Explain the Diffuse TeV Excess Observed by Milagro.

    Science.gov (United States)

    Linden, Tim; Buckman, Benjamin J

    2018-03-23

    Milagro observations have found bright, diffuse TeV emission concentrated along the galactic plane of the Milky Way. The intensity and spectrum of this emission is difficult to explain with current models of hadronic γ-ray production, and has been named the "TeV excess." We show that TeV emission from pulsars naturally explains this excess. Recent observations have detected "TeV halos" surrounding pulsars that are either nearby or particularly luminous. Extrapolating this emission to the full population of Milky Way pulsars indicates that the ensemble of "subthreshold" sources necessarily produces bright TeV emission diffusively along the Milky Way plane. Models indicate that the TeV halo γ-ray flux exceeds that from hadronic γ rays above an energy of ∼500  GeV. Moreover, the spectrum and intensity of TeV halo emission naturally matches the TeV excess. Finally, we show that upcoming HAWC observations will resolve a significant fraction of the TeV excess into individual TeV halos, conclusively confirming, or ruling out, this model.

  14. RHEED studies of MBE growth mechanisms of CdTe and CdMnTe

    Energy Technology Data Exchange (ETDEWEB)

    Waag, A.; Behr, T.; Litz, T.; Kuhn-Heinrich, B.; Hommel, D.; Landwehr, G. (Physikalisches Inst., Univ. Wuerzburg (Germany))

    1993-01-30

    We report on reflection high energy electron diffraction (RHEED) studies of molecular beam epitaxy (MBE) growth of CdTe and CdMnTe on (100) oriented CdTe substrates. RHEED oscillations were measured for both the growth and desorption of CdTe and CdMnTe as a function of flux and temperature. For the first time, the influence of laser and electron irradiation on the growth rate, as well as desorption, of CdTe is studied in detail using RHEED oscillations. We found a very small effect on the growth rate as well as on the CdTe desorption rate. The growth rate of CdTe was determined for different temperatures and CdTe flux ratios. The obtained experimental results are compared with a kinetic growth model to get information on the underlying growth processes, taking into account the influence of a precursor by including surface diffusion. From the comparison between model and experimental results the sticking coefficients of Cd and Te are determined. The growth rate of CdMnTe increases with Mn flux. This dependence can be used to calibrate the Mn content during growth by comparing the growth rate of CdTe with the growth rate of CdMnTe. The change in growth rate has been correlated with Mn content via photoluminescence measurements. In addition, the sticking coefficient of Mn is derived by comparing experimental results with a kinetic growth model. For high manganese content a transition to three-dimensional growth occurs. (orig.).

  15. Si-Sb-Te materials for phase change memory applications

    International Nuclear Information System (INIS)

    Rao Feng; Song Zhitang; Ren Kun; Zhou Xilin; Cheng Yan; Wu Liangcai; Liu Bo

    2011-01-01

    Si-Sb-Te materials including Te-rich Si 2 Sb 2 Te 6 and Si x Sb 2 Te 3 with different Si contents have been systemically studied with the aim of finding the most suitable Si-Sb-Te composition for phase change random access memory (PCRAM) use. Si x Sb 2 Te 3 shows better thermal stability than Ge 2 Sb 2 Te 5 or Si 2 Sb 2 Te 6 in that Si x Sb 2 Te 3 does not have serious Te separation under high annealing temperature. As Si content increases, the data retention ability of Si x Sb 2 Te 3 improves. The 10 years retention temperature for Si 3 Sb 2 Te 3 film is ∼ 393 K, which meets the long-term data storage requirements of automotive electronics. In addition, Si richer Si x Sb 2 Te 3 films also show improvement on thickness change upon annealing and adhesion on SiO 2 substrate compared to those of Ge 2 Sb 2 Te 5 or Si 2 Sb 2 Te 6 films. However, the electrical performance of PCRAM cells based on Si x Sb 2 Te 3 films with x > 3.5 becomes worse in terms of stable and long-term operations. Si x Sb 2 Te 3 materials with 3 < x < 3.5 are proved to be suitable for PCRAM use to ensure good overall performance.

  16. Growth and optical properties of CdTe quantum dots in ZnTe nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Wojnar, Piotr; Janik, Elzbieta; Baczewski, Lech T.; Kret, Slawomir; Karczewski, G.; Wojtowicz, Tomasz [Institute of Physics, Polish Academy of Sciences, Al Lotnikow 32/46, 02-668 Warsaw (Poland); Goryca, Mateusz; Kazimierczuk, Tomasz; Kossacki, Piotr [Institute of Experimental Physics, Faculty of Physics, University of Warsaw, ul Hoza 69, 00-681 Warsaw (Poland)

    2011-09-12

    We report on the formation of optically active CdTe quantum dots in ZnTe nanowires. The CdTe/ZnTe nanostructures have been grown by a gold nanocatalyst assisted molecular beam epitaxy in a vapor-liquid solid growth process. The presence of CdTe insertions in ZnTe nanowire results in the appearance of a strong photoluminescence band in the 2.0 eV-2.25 eV energy range. Spatially resolved photoluminescence measurements reveal that this broad emission consists of several sharp lines with the spectral width of about 2 meV. The large degree of linear polarization of these individual emission lines confirms their nanowire origin, whereas the zero-dimensional confinement is proved by photon correlation spectroscopy.

  17. Electrical and optical properties of SnEuTe and SnSrTe films

    Science.gov (United States)

    Ishida, Akihiro; Tsuchiya, Takuro; Yamada, Tomohiro; Cao, Daoshe; Takaoka, Sadao; Rahim, Mohamed; Felder, Ferdinand; Zogg, Hans

    2010-06-01

    The SnTe, Sn1-xEuxTe and Sn1-xSrxTe (x<0.06) films were prepared by hot wall epitaxy. The ternary alloy films prepared in cation rich condition had hole concentration around 1×1019 cm-3 with high mobility exceeding 2000 cm2/V s at room temperature. Optical transmission spectra were also measured in the temperature range from 100 to 400 K and compared with theoretical calculations. Optical transmission spectra of the SnTe were simulated successfully assuming bumped band edge structures. A band inversion model was proposed for the Sn1-xEuxTe and Sn1-xSrxTe systems, and the optical transmission spectra were also simulated successfully assuming the band inversion model.

  18. BOREAS TE-17 Production Efficiency Model Images

    Data.gov (United States)

    National Aeronautics and Space Administration — A BOREAS version of the Global Production Efficiency Model(www.inform.umd.edu/glopem) was developed by TE-17 to generate maps of gross and net primary production,...

  19. Linear accelerators for TeV colliders

    International Nuclear Information System (INIS)

    Wilson, P.B.

    1985-05-01

    This paper summarizes four tutorial lectures on linear electron accelerators: Electron Linacs for TeV Colliders, Emittance and Damping Rings, Wake Fields: Basic Concepts, and Wake Field Effects in Linacs

  20. Intern transport beter te plannen met computer

    NARCIS (Netherlands)

    Annevelink, E.

    1999-01-01

    Verbetering van intern transport in de potplantenteelt. Door getoetste vuistregels te combineren met toegepaste wiskunde is automatische planning van het intern transport binnen handbereik. Dit leidt tot minder transportbewegingen en tijdsbesparing bij het plannen

  1. Perspective on TeV-scale physics

    International Nuclear Information System (INIS)

    Chanowitz, M.S.

    1989-02-01

    These lectures review theoretical motivations and experimental prospects for the study of TeV-scale physics. Three clues to the importance of TeV physics are discussed: implications of quantum corrections for the masses of a fourth generation quark-lepton family, the gauge hierarchy problem and known solutions, and implications of symmetry and unitarity for the symmetry-breaking sector of the electroweak gauge theory. The experimental prospects are reviewed with emphasis on the multi-TeV pp colliders that may be built in the 1990's. The topics include new phenomena that might occur - e.g., a fourth generation, heavy gauge bosons, composite structure, and supersymmetry - as well as the signals of the unknown SU(2)/sub L/ /times/ U(1)/sub Y/ breaking mechanism that must occur within the TeV domain. 96 refs., 21 figs

  2. Hoe leer je iemand effectief te leren?

    NARCIS (Netherlands)

    Kester, Liesbeth; Koper, Rob; Gijselaers, Jérôme; Bahreini, Kiavash; De Vries, Fred; Wetzels, Sandra; Kirschner, Paul A.; Berkhout, Jeroen; Storm, Jeroen

    2012-01-01

    Kester, L., Koper, R., Gijselaers, J., Bahreini, K., De Vries, F., Berkhout, J., & Storm, J. (2012, 30 maart). Hoe leer je iemand effectief te leren? Masterclass in de OpenU community. Open universiteit, Heerlen, Nederland. Beschikbaar op

  3. TeSLA e-assessment workshop

    NARCIS (Netherlands)

    Janssen, José

    2016-01-01

    Presentatie ten behoeve van de e-assessment workshop voor docenten van de Open Universiteit Nederland betrokken in de eerste TeSLA pilot. Topics: toetsfraude, toetsdesign, technologie voor authenticatie en verificatie van auteurschap.

  4. Matrix-controlled morphology evolution of Te inclusions in CdZnTe single crystal

    International Nuclear Information System (INIS)

    He, Yihui; Jie, Wanqi; Xu, Yadong; Wang, Tao; Zha, Gangqiang; Yu, Pengfei; Zheng, Xin; Zhou, Yan; Liu, Hang

    2012-01-01

    The fine morphologies of microscale Te inclusions in CdZnTe single crystal were investigated to reveal their shape evolution. Such inclusions from crystal ingots with different post-growth cooling rates were analyzed using scanning electron microscopy after surface treatment. A tetrakaidecahedron model embodying {1 0 0} and {1 1 1} matrix facets was developed to interpret the form of the Te inclusions. An entire shape evolution process was also proposed where the final configuration of the Te inclusions was a tetrahedron comprising {1 1 1}B facets.

  5. CuGaTe2-CuAlTe2 system

    International Nuclear Information System (INIS)

    Bodnar', I.V.

    2003-01-01

    The results of studies on the chemical interaction in the CuGaTe 2 -CuAlTe 2 as well as on the thermal and optical properties of the formed solid solutions are presented. It is shown, that continuous number of solid solutions are formed in the CuGaTe 2 -CuAlTe 2 system, which crystallize in the chalcopyrite structure. The diagram of state of this system is plotted. The thermal expansion of these materials is studied through the dilatometric method. The linear dependence of the thermal expansion coefficient on the composition is established. The concentration dependences of the forbidden zone width diverge from the linearity [ru

  6. Formation of self assembled PbTe quantum dots in CdTe on Si(111)

    Science.gov (United States)

    Felder, F.; Fognini, A.; Rahim, M.; Fill, M.; Müller, E.; Zogg, H.

    2010-01-01

    We describe the growth and formation of self assembled PbTe quantum dots in a CdTe host on a silicon (111) substrate. Annealing yields different photoluminescence spectra depending on initial PbTe layer thickness, thickness of the CdTe cap layer and annealing temperature. Generally two distinct emission peaks at ˜0.3 eV and ˜0.45 eV are visible. Model calculations explaining their temperature dependence are performed. The dot size corresponds well with the estimated sizes from electron microscopy images. The quantum dots may be used as absorber within a mid-infrared detector.

  7. HgTe based topological insulators

    International Nuclear Information System (INIS)

    Bruene, Christoph

    2014-01-01

    This PhD thesis summarizes the discovery of topological insulators and highlights the developments on their experimental observations. The work focuses on HgTe. The thesis is structured as follows: - The first chapter of this thesis will give a brief overview on discoveries in the field of topological insulators. It focuses on works relevant to experimental results presented in the following chapters. This includes a short outline of the early predictions and a summary of important results concerning 2-dimensional topological insulators while the final section discusses observations concerning 3-dimensional topological insulators. - The discovery of the quantum spin Hall effect in HgTe marked the first experimental observation of a topological insulator. Chapter 2 focuses on HgTe quantum wells and the quantum spin Hall effect. The growth of high quality HgTe quantum wells was one of the major goals for this work. In a final set of experiments the spin polarization of the edge channels was investigated. Here, we could make use of the advantage that HgTe quantum well structures exhibit a large Rashba spin orbit splitting. - HgTe as a 3-dimensional topological insulator is presented in chapter 3. - Chapters 4-6 serve as in depth overviews of selected works: Chapter 4 presents a detailed overview on the all electrical detection of the spin Hall effect in HgTe quantum wells. The detection of the spin polarization of the quantum spin Hall effect is shown in chapter 5 and chapter 6 gives a detailed overview on the quantum Hall effect originating from the topological surface state in strained bulk HgTe.

  8. The system SnTe-InSe

    International Nuclear Information System (INIS)

    Gurshumov, A.P.; Alidzhanov, M.A.; Aliev, A.S.; Gadzhiev, T.G.; Mamedov, N.A.

    1986-01-01

    This paper discusses the nature of the interaction and physicochemical properties of the alloys of the system SnTe-InSe. The DTA was performed on an NTR-74 pyrometer, XPA on a Dron-2.0 diffractometer and MSA on an MIM-7 metallographic microscope. The microhardness of the samples was determined on a PMT-3 microhardness tester. The congruently melting compound SnInTeSe and solid solutions based on the starting components are formed in the system

  9. Surface passivation of HgCdTe by CdZnTe and its characteristics

    Science.gov (United States)

    Lee, T. S.; Choi, K. K.; Jeoung, Y. T.; Kim, H. K.; Kim, J. M.; Kim, Y. H.; Chang, J. M.; Song, W. S.; Kim, S. U.; Park, M. J.; Lee, S. D.

    1997-06-01

    In this paper, we report the results of capacitance-voltage measurements conducted on several metal-insulator semiconductor (MIS) capacitors in which HgCdTe surfaces are treated with various surface etching and oxidation processes. CdZnTe passivation layers were deposited on HgCdTe surfaces by thermal evaporation after the surfaces were etched with 0.5-2.0% bromine in methanol solution, or thin oxide layers (tox ˜ few ten Å) were grown on the surfaces, in order to investigate effects of the surface treatments on the electrical properties of the surfaces, as determined from capacitance-voltage (C-V) measurements at 80K and 1 MHz. A negative flat band voltage has been observed for MIS capacitors fabricated after etching of HgCdTe surfaces with bromine in methanol solutions, which is reported to make the surface Te-rich. It is inferred that residual Te on the surface is a positive charge, Te4+. C-V characteristics for MIS capacitors fabricated on oxide surfaces grown by air-exposure and electrolytic process have shown large hysteresis effects, from which it is inferred that imperfect and electrically active oxide compounds and HgTe particles near the surface become slow interface states.

  10. Om te staak of nie te staak nie? Die sieninge van 'n aantal swart ...

    African Journals Online (AJOL)

    Erna Kinsey

    sig, is eerstens om ondersoek in te stel na 'n groep swart opvoeders se sieninge oor opvoeders se reg om te staak. Tweedens sal na die redes wat hierdie opvoeders aanvoer waarom hulle al aan stakings deel- geneem het of sal deelneem, gelet word. Derdens sal die redes waarom sommige opvoeders nie sal staak nie, ...

  11. The fingerprint of Te-rich and stoichiometric Bi2Te3 nanowires by Raman spectroscopy

    Science.gov (United States)

    Rodríguez-Fernández, Carlos; Manzano, Cristina V.; Romero, Aldo H.; Martín, Jaime; Martín-González, Marisol; Morais de Lima, Mauricio, Jr.; Cantarero, Andrés

    2016-02-01

    We unambiguously show that the signature of Te-rich bismuth telluride is the appearance of three new peaks in the Raman spectra of Bi2Te3, located at 88, 117 and 137 cm-1. For this purpose, we have grown stoichiometric Bi2Te3 nanowires as well as Te-rich nanowires. The absence of these peaks in stoichiometric nanowires, even in those with the smallest diameter, shows that they are not related to confinement effects or the lack of inversion symmetry, as stated in the literature, but to the existence of Te clusters. These Te clusters have been found in non-stoichiometric samples by high resolution electron microscopy, while they are absent in stoichiometric samples. The Raman spectra of the latter corresponds to the one for bulk Bi2Te3. The intensity of these Raman peaks are clearly correlated to the Te content. In order to ensure statistically meaningful results, we have investigated several regions from every sample.

  12. Cumulative effects of Te precipitates in CdZnTe radiation detectors

    International Nuclear Information System (INIS)

    Bolotnikov, A.E.; Camarda, G.S.; Carini, G.A.; Cui, Y.; Li, L.; James, R.B.

    2007-01-01

    High-quality radiation detector-grade CdZnTe material is free from large-scale defects, such as grain boundaries, twins, and large Te or Cd inclusions (>50 μm), although it usually contains high concentrations of uniformly distributed Te inclusions and precipitates, typically of ∼20-μm-diameter size or smaller. We address the effects of the small-size Te precipitates on charge collection in CZT detectors, the significance of which is not yet well characterized. The strong correlation that we earlier found between the high-resolution X-ray maps and IR images proved that even small Te precipitates can trap substantial fractions of charge from the electron cloud. In this work, we modeled the transport of an electron cloud across idealized CZT devices containing Te precipitates to demonstrate that their cumulative effect can explain the degradation of energy resolution and the detection efficiency losses observed in actual CZT devices. Due to lack of experimental data on how the Te precipitates interact with an electron cloud, we developed a simplified (phenomenological) model based on the geometrical aspects of the problem. Despite its simplicity, the model correctly reproduced many experimental facts and gave quantitative predictions on the extent to which the presence of Te precipitates and inclusions can be tolerated. The broadening of the electron cloud due to repulsion and diffusion is at the core of the problem, making even low concentrations of small precipitates important in the device's performance

  13. Study of Te Inclusion and Related Point Defects in THM-Growth CdMnTe Crystal

    Science.gov (United States)

    Mao, Yifei; Zhang, Jijun; Min, Jiahua; Liang, Xiaoyan; Huang, Jian; Tang, Ke; Ling, Liwen; Li, Ming; Zhang, Ying; Wang, Linjun

    2018-02-01

    This study establishes a model for describing the interaction between Te inclusions, dislocations and point defects in CdMnTe crystals. The role of the complex environment surrounding the formation of Te inclusions was analyzed. Images of Te inclusions captured by scanning electron microscope and infrared microscope were used to observe the morphology of Te inclusions. The morphology of Te inclusions is discussed in light of crystallography, from the crystal growth temperature at 900°C to the melting temperature of Te inclusions using the traveling heater method. The dislocation nets around Te inclusions were calculated by counting lattice mismatches between the Te inclusions and the bulk CdMnTe at 470°C. The point defects of Te antisites were found to be gathered around Te inclusions, with dislocation climb during the cooling phase of crystal growth from 470°C to room temperature. The Te inclusions, dislocation nets and surrounding point defects are considered to be an entirety for evaluating the effect of Te inclusions on CdMnTe detector performance, and an effective mobility-lifetime product (μτ) was obtained.

  14. Fabrication of Te and Te-Au Nanowires-Based Carbon Fiber Fabrics for Antibacterial Applications

    Directory of Open Access Journals (Sweden)

    Ting-Mao Chou

    2016-02-01

    Full Text Available Pathogenic bacteria that give rise to diseases every year remain a major health concern. In recent years, tellurium-based nanomaterials have been approved as new and efficient antibacterial agents. In this paper, we developed the approach to directly grow tellurium nanowires (Te NWs onto commercial carbon fiber fabrics and demonstrated their antibacterial activity. Those Te NWs can serve as templates and reducing agents for gold nanoparticles (Au NPs to deposit. Three different Te-Au NWs with varied concentration of Au NPs were synthesized and showed superior antibacterial activity and biocompability. These results indicate that the as-prepared carbon fiber fabrics with Te and Te-Au NWs can become antimicrobial clothing products in the near future.

  15. Improved structural and electrical properties in native Sb2Te3/GexSb2Te3+x van der Waals superlattices due to intermixing mitigation

    NARCIS (Netherlands)

    Cecchi, Stefano; Zallo, Eugenio; Momand, Jamo; Wang, Ruining; Kooi, Bart J.; Verheijen, Marcel A.; Calarco, Raffaella

    Superlattices made of Sb2Te3/GeTe phase change materials have demonstrated outstanding performance with respect to GeSbTe alloys in memory applications. Recently, epitaxial Sb2Te3/GeTe superlattices were found to feature GexSb2Te3+x blocks as a result of intermixing between constituting layers.

  16. Improved structural and electrical properties in native Sb2Te3/GexSb2Te3+x van der Waals superlattices due to intermixing mitigation

    NARCIS (Netherlands)

    Cecchi, S.; Zallo, E.; Momand, J.; Wang, R.; Kooi, B.J.; Verheijen, M.A.; Calarco, R.

    Superlattices made of Sb2Te3/GeTe phase change materials have demonstrated outstanding performance with respect to GeSbTe alloys in memory applications. Recently, epitaxial Sb2Te3/GeTe superlattices were found to feature GexSb2Te3+x blocks as a result of intermixing between constituting layers. Here

  17. Design principles for HgTe based topological insulator devices

    Science.gov (United States)

    Sengupta, Parijat; Kubis, Tillmann; Tan, Yaohua; Povolotskyi, Michael; Klimeck, Gerhard

    2013-07-01

    The topological insulator properties of CdTe/HgTe/CdTe quantum wells are theoretically studied. The CdTe/HgTe/CdTe quantum well behaves as a topological insulator beyond a critical well width dimension. It is shown that if the barrier (CdTe) and well-region (HgTe) are altered by replacing them with the alloy CdxHg1-xTe of various stoichiometries, the critical width can be changed. The critical quantum well width is shown to depend on temperature, applied stress, growth directions, and external electric fields. Based on these results, a novel device concept is proposed that allows to switch between a normal semiconducting and topological insulator state through application of moderate external electric fields.

  18. Investigations on the system Te/O/Br

    International Nuclear Information System (INIS)

    Oppermann, H.; Kunze, G.; Wolf, E.; Titov, V.A.; Kokovin, G.A.

    1978-01-01

    The melting point diagram of the system TeBr 4 -TeO 2 was obtained by total pressure measurements and DTA measurements. A congruent melting composition Te 6 O 11 Br 2 exists, the melting point is 570 0 C. The enthalpy of formation and the standard entropy of the species TeOBr 2 ,g was derived from measurements of the total pressure over Te 6 O 11 Br 2 /TeBr 4 and from the transport behaviour of the TeO 2 with Br 2 . From the decomposition-pressure measurements over Te 6 O 11 Br 2 /TeO 2 follow the partial pressures. The enthalpy of formation ΔH 0 (Te 6 O 11 Br 2 ,f,298) -453.5 kcal/Mol was obtained from the enthalpy of solution. The transport-behaviour of TeO 2 with HBr, TeBr 4 and Br 2 and that of Te 6 O 11 Br 2 is clear with the thermodynamic data of TeOBr 2 . (author)

  19. Review of CdTe medical applications

    Energy Technology Data Exchange (ETDEWEB)

    Entine, G; Garcia, D A; Tow, D E

    1977-02-01

    CdTe sensors are now being used in several areas of nuclear medicine. CdTe probe technics, originally developed to study dental pathology in dog models, are being used clinically to diagnose venous thrombosis of the legs and to detect occult dental infections in patients scheduled for prosthetic cardiovascular and orthopedic surgery. Similar instrumentation is in use in animal research of myocardial infarction and synthetic tooth substitutes. Transmission technics have also been developed to diagnose pulmonary edema and to measure bone mineral changes in space flight. Investigations are also underway in the use of linear or two-dimensional arrays of CdTe gamma sensors for medical imaging. Economic considerations have slowed this work, but the technology appears to be available. Development of photoconductive CdTe X-ray detectors for scintigraphic scanners has also begun. Rapid detector improvement will be needed for success in this field, but the potential usefulness is very great. Together, the present application results are encouraging and wide use of CdTe detectors should occur within only a few years.

  20. Research into the electrical property variation of undoped CdTe and ZnTe crystals grown under Te-rich conditions

    Energy Technology Data Exchange (ETDEWEB)

    Xu, Yadong, E-mail: xyd220@nwpu.edu.cn; Liu, Hang; He, Yihui; Yang, Rui; Luo, Lin; Jie, Wanqi

    2014-11-05

    Highlights: • Conductivity type and resistivity of undoped Te-rich ZnTe and CdTe are different. • Te{sub i} and V{sub Zn} as the dominant defects account for the p-type low resistivity ZnTe. • Te{sub Cd} as the principle defect leading to the light n-type high resistivity CdTe. • DAP and eA peaks dominate the luminescence with their intensities anti-correlated. - Abstract: Both undoped ZnTe and CdTe bulk single crystals are grown under Te-saturated conditions from the solution and melt, respectively. To give an insight into the variation of the electrical properties, the defects structures in both tellurides are discussed. According to the actual growth velocities and the entire cooling history, tellurium interstitials (Te{sub i}) and Zinc vacancies (V{sub Zn}) are proposed as the dominant grown-in defects, account for the low resistivity of p-type ZnTe. However, relatively high pulling rates and slow cooling-down processes result in tellurium anti-sites (Te{sub Cd}) as the principle grown-in defects, leading to the high resistivity of light n-type CdTe. Further low-temperature (8.6 K) photoluminescence spectra of both tellurides are obtained. The donor–acceptor pair (DAP) and recombination of free electron to neutral acceptor (eA) dominate the luminescence, however, with their intensities are anti-correlated. eA is superior to DAP in undoped Te-rich ZnTe, suggests a high concentration of Te{sub i} or V{sub Zn}. On the contrary, DAP is the principal emission for undoped Te-rich CdTe. In addition, V-line is clearly identified in undoped Te-rich ZnTe, which possibly associated with V{sub Zn} or close Frenkel pair V{sub Zn}–Zn{sub i}.

  1. Anomalous phase change characteristics in Fe-Te materials

    International Nuclear Information System (INIS)

    Fu, X. T.; Song, W. D.; Ji, R.; Ho, H. W.; Wang, L.; Hong, M. H.

    2012-01-01

    Phase change materials have become significantly attractive due to its unique characteristics for its extensive applications. In this paper, a kind of phase change material, which consists of Fe and Te components, is developed. The crystallization temperature of the Fe-Te materials is 180 deg. C for Fe 1.19 Te and can be adjusted by the Fe/Te ratio. High-speed phase change in the Fe-Te materials has been demonstrated by nanosecond laser irradiation. Comparing to conventional phase change materials, the Fe-Te materials exhibit an anomalous optical property that has higher reflectivity at amorphous than crystalline state, which is useful for data storage design.

  2. Simple one-pot aqueous synthesis of CdHgTe nanocrystals using sodium tellurite as the Te source

    International Nuclear Information System (INIS)

    Shen, Zhitao; Luo, Chunhua; Huang, Rong; Wang, Yiting; Peng, Hui; Travas-sejdic, Jadranka

    2014-01-01

    In this work, we systematically investigated the one-pot aqueous synthesis conditions of CdHgTe nanocrystals (NCs) using sodium tellurite (Na 2 TeO 3 ) as the Te source, and found that the added content of Hg 2+ and the initial pH value of reaction solutions significantly affected the photoluminescence quantum yield (PL QY) of alloyed CdHgTe NCs. When the concentration of Cd was 1.0 mmol L −1 , the mole ratio of Cd/Te/Hg/MPA was 1:0.5:0.05:2.4, and the initial pH value of the reaction solution was about 8.78, the PL QY of as-prepared CdHgTe NCs was up to 45%. Characterization by HRTEM and XRD confirmed the crystalline nature of CdHgTe NCs. Compared to other synthetic approaches of CdHgTe NCs, our experimental results indicate that Na 2 TeO 3 could be an attractive alternative Te source to directly synthesize CdHgTe NCs in aqueous media. - Highlights: • A one-pot method was developed for the synthesis of highly luminescent CdHgTe nanocrystals (NCs). • Sodium tellurite was used as the Te source. • The quantum yield reached up to 45%. • The experimental conditions were optimized and the prepared CdHgTe NCs were characterized

  3. TeV gamma-ray astronomy

    International Nuclear Information System (INIS)

    Cui Wei

    2009-01-01

    The field of ground-based gamma-ray astronomy has enjoyed rapid growth in recent years. As an increasing number of sources are detected at TeV energies, the field has matured and become a viable branch of modern astronomy. Lying at the uppermost end of the electromagnetic rainbow, TeV photons are always preciously few in number but carry essential information about the particle acceleration and radiative processes involved in extreme astronomical settings. Together with observations at longer wavelengths, TeV gamma-ray observations have drastically improved our view of the universe. In this review, we briefly describe recent progress in the field. We will conclude by providing a personal perspective on the future of the field, in particular, on the significant roles that China could play in advancing this young but exciting field. (invited reviews)

  4. Delineation of phase fields at the Te-rich end of the Ru Te binary system

    Science.gov (United States)

    Ali (Basu), M.; Bharadwaj, S. R.; Das, D.

    2005-04-01

    The tellurium rich side of the ruthenium-tellurium binary system was studied by differential thermal analysis. To avoid reported problems of Te loss by evaporation and reactive interference of Te to the thermocouples of the thermal analyzer, the present study made use of specially designed sealed quartz capsules as DTA containers. The thermal analyses were carried out over the compositional range of 0.66 ⩽ xTe ⩽ 1.00 with the help of SETARAM TG/DTA and other indigenously built thermal analyzers available in this laboratory. The thermal data generated for fifteen different compositions were interpreted for the nature of phase transitions occurring at their characteristic temperatures. The Ru-Te binary system was found to have a eutectic transformation at 444 °C at a composition of xTe = 0.918 and a monotectic transformation at 447 °C at a composition of xTe = 0.700. Up to 6 at.% Ru is soluble in Te at about 440 °C.

  5. TeV. The dream energy scale

    International Nuclear Information System (INIS)

    Murayama, Hitoshi

    2006-01-01

    In this talk, I'd like to explain why the TeV, 1,000,000,000,00 electron volt, is a particularly interesting energy scale in physics. I being recapitulating what particle physics is all about, citing two big questions: what the Universe is made of, and Einstein's dream of unification. TeV energy appears to be relevant to both questions, suggesting rich and complex physics at this energy. I outline how two facilities, LHC and ILC, will work together with reveal what is going on at this exciting energy scale. (author)

  6. PbSnTe injection lasers

    International Nuclear Information System (INIS)

    Oron, M.

    1982-03-01

    Carrier confined homostructure PbSnTe lasers were developed and investigated. In this laser structure good electrical and optical confinement can be achieved by a suitable carrier concentration profile. The advantage of these lasers over PbSnTe heterostructure lasers is the perfect lattice matching between the various layers of the structure. The desired carrier concentration profile was achieved by the growth of several epitaxial layers by the LPE method on a suitable substrate. The performance of these lasers was compared with that of previous homostructure and double heterostructure lasers. (H.K.)

  7. Thermodynamic characterization of Ni3TeO6, Ni2Te3O8 and NiTe2O5

    Science.gov (United States)

    Dawar, Rimpi; Babu, R.; Ananthasivan, K.; Anthonysamy, S.

    2017-09-01

    Measurement of vapour pressure of TeO2(g) over the biphasic mixture Ni3TeO6 (s) + NiO(s) in the temperature range 1143-1272 K was carried out using transpiration-thermogravimetric technique (TTG). Gibbs energy of formation of Ni3TeO6 was obtained from the temperature dependence of vapour pressure of TeO2 (g) generated by the incongruent vapourisation reaction, Ni3TeO6 (s) → NiO(s) + TeO2 (g) + 1/2 O2 in the temperature range 1143-1272 K. An isoperibol type drop calorimeter was used to measure the enthalpy increments of Ni3TeO6, Ni2Te3O8 and NiTe2O5. Thermodynamic functions viz., heat capacity, entropy and Gibbs energy functions of these compounds were derived from the experimentally measured enthalpy increment values. Third-law analysis was carried out to ascertain absence of temperature dependent systematic errors in the measurement of vapour pressure of TeO2 (g). A value of -1265.1 ± 1.5 kJ mol-1 was obtained for Δ Hf,298K o (Ni3TeO6) using third-law analysis.

  8. Manufacturing Te/PEDOT Films for Thermoelectric Applications.

    Science.gov (United States)

    Culebras, Mario; Igual-Muñoz, Ana María; Rodríguez-Fernández, Carlos; Gómez-Gómez, María Isabel; Gómez, Clara; Cantarero, Andrés

    2017-06-21

    In this work, flexible Te films have been synthesized by electrochemical deposition using PEDOT [poly(3,4-ethylenedioxythiophene)] nanofilms as working electrodes. The Te electrodeposition time was varied to find the best thermoelectric properties of the Te/PEDOT double layers. To show the high quality of the Te films grown on PEDOT, the samples were analyzed by Raman spectroscopy, showing the three Raman active modes of Te: E 1 , A 1 , and E 2 . The X-ray diffraction spectra also confirmed the presence of crystalline Te on top of the PEDOT films. The morphology of the Te/PEDOT films was studied using scanning electron microscopy, showing a homogeneous distribution of Te along the film. Also an atomic force microscope was used to analyze the quality of the Te surface. Finally, the electrical conductivity and the Seebeck coefficient of the Te/PEDOT films were measured as a function of the Te deposition time. The films showed an excellent thermoelectric behavior, giving a maximum power factor of about 320 ± 16 μW m -1 K -2 after 2.5 h of Te electrochemical deposition, a value larger than that reported for thin films of Te. Qualitative arguments to explain this behavior are given in the discussion.

  9. Reduction in thermal conductivity of BiSbTe lump

    Energy Technology Data Exchange (ETDEWEB)

    Ahmad, Kaleem [King Saud University, Sustainable Energy Technologies Center, College of Engineering, PO Box 800, Riyadh (Saudi Arabia); Wan, C. [Tsinghua University, State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Beijing (China); Al-Eshaikh, M.A.; Kadachi, A.N. [King Saud University, Research Center, College of Engineering, PO Box 800, Riyadh (Saudi Arabia)

    2017-03-15

    In this work, systematic investigations on the thermal conductivities of BiSbTe lump, microstructured pristine BiSbTe bulk and single wall carbon nanotubes (SWCNTs)/BiSbTe bulk nanocomposites were performed. BiSbTe lumps were crushed to form a coarse powder (200 μm) and effect of particle size reduction on the effective thermal conductivity of BiSbTe (200 μm) bulk were analyzed. For further reduction in the conductivity, a two pronged strategy has been employed. First, additional refinement of BiSbTe (200 μm) were performed through ball milling in an inert environment. Second, SWCNTs in 0.75, and 1.0 vol% were distributed uniformly in the fine BiSbTe ball milled powder. The results showed that the effective thermal conductivities decrease with the reduction in the particle size from lump to BiSbTe (200 μm) bulk as well as with the addition of SWCNTs accompanied by further refinement of BiSbTe particles. The significant reduction in thermal conductivities of the lump was achieved for pure BiSbTe (200 μm) bulk and 0.75 vol% of SWCNTs/BiSbTe composite. This can be ascribed to the enhanced phonon scattering by the grain boundaries between the nanostructured BiSbTe particles as well as the interfaces between BiSbTe and the low dimensional carbon nanotubes. (orig.)

  10. Phase diagram of SnTe-CdSe cross-section of SnTe+CdSe reversible SnSe+CdTe ternary reciprocal system

    International Nuclear Information System (INIS)

    Dubrovin, I.V.; Budennaya, L.D.; Mizetskaya, I.B.; Sharkina, Eh.V.

    1986-01-01

    Phase equilibrium diagram of SnTe-CdSe cross-section of Sn, Cd long Te, Se ternary reciprocal system is investigated using the methods of differential thermal, X-ray phase, and microstructural analyses. Maximum length of solid solutions on the base of SnTe corresponds to approximately 14 mol.% at 1050 K and approximately 3 mol.% of CdSe at 670 K. Region of solid solutions on the base of CdSe corresponds to less than 1 mol.% of SnTe at room temperature. SnTe-CdSe cross-section is not a quasibinar one. Equilibrium is shifted to the left in the SnTe+CdSe reversible SnSe+CdTe reciprocal system

  11. X-ray electron spectra of chalcogenide glasses and polycrystalline alloys of Ge-Te and As-Te systems

    International Nuclear Information System (INIS)

    Panus, V.R.

    1990-01-01

    Comparative investigation into structures of crystals and glasses in Ge-Te and As-Te two-component systems was conducted. Analysis of x-ray electron spectra of Ge-Te and As-Te systems indicates, that processes of dissociation-association resulting in formation of new structure units occur in telluride melts at synthesis temperatures. Structural chemical composition of binary glass-like alloys of Ge-Te and As-Te systems differs essentially from the one that corresponds to fusibility equilibrium curve. Oxygen doping into tellurium-base glasses results mainly in occurence of structures forecasted due to thermochemical calculation

  12. New Zealand Perspectives on Early Childhood Education: Naku Te Rourou Nau Te Rourou Ka Ora Ai Te Iwi

    Science.gov (United States)

    Tesar, Marek

    2016-01-01

    This special issue focuses on histories, pedagogies, policies, philosophies and alternative perspectives in early childhood education. "Te Whariki" is heralded as the first bicultural curriculum not only in New Zealand, but in the world. Its importance is reflected in national and international research and early childhood discourses.…

  13. Strong coupling and polariton lasing in Te based microcavities embedding (Cd,Zn)Te quantum wells

    Energy Technology Data Exchange (ETDEWEB)

    Rousset, J.-G., E-mail: j-g.rousset@fuw.edu.pl; Piętka, B.; Król, M.; Mirek, R.; Lekenta, K.; Szczytko, J.; Borysiuk, J.; Suffczyński, J.; Kazimierczuk, T.; Goryca, M.; Smoleński, T.; Kossacki, P.; Nawrocki, M.; Pacuski, W. [Institute of Experimental Physics, Faculty of Physics, University of Warsaw, ul. Pasteura 5, PL-02-093 Warszawa (Poland)

    2015-11-16

    We report on properties of an optical microcavity based on (Cd,Zn,Mg)Te layers and embedding (Cd,Zn)Te quantum wells. The key point of the structure design is the lattice matching of the whole structure to MgTe, which eliminates the internal strain and allows one to embed an arbitrary number of unstrained quantum wells in the microcavity. We evidence the strong light-matter coupling regime already for the structure containing a single quantum well. Embedding four unstrained quantum wells results in further enhancement of the exciton-photon coupling and the polariton lasing in the strong coupling regime.

  14. Plattelandimpuls : leren door gewoon te dóen

    NARCIS (Netherlands)

    Noorduyn, L.

    2008-01-01

    Plattelandsondernemers die hun activiteiten verbreden, vergeten nogal eens serieuze aandacht te besteden aan de vermarkting van hun product. Met het project PlattelandImpuls hebben ondernemers hun vaardigheden op dat vlak kunnen verbeteren door te werken met product-marktcombinaties.

  15. ??????????? ????????? ???????????? ???????????? NH4X (?=??,?1) ??? ??????????? CdxHgi-xTe ??????? ???????? ???????????? ???????

    OpenAIRE

    ??????, ?. ?.; ?????????, ?. ?.; ???????, ?. ?.; ?????????, ?. ?.; ?????????, ?. ?.

    2004-01-01

    ?? ?????? ??????????? ?????????? ???????????? ?????? ??????? ???? ??????? CdxHgi_xTe-Hg-NH4Br ??? ??????? ?????? Hg ? ????????? ?????????? 560-860? ? ??????????? ?????? ?? = 103-=-105 ?? ????????? ????????, ??? ??????? ???????? ????? ? ??????????????? ??????, ????? ? ?????? - CdBr2, Hg, ??2. ??? ????????? ??????? ??????? ???????????? CdxHgi_xTe ??????? ? = 0.2; 0.3; 0.4 ?? ????????? ??? ??? ? ??? ?????????? ??????? ???????? ??????? (??? ?????? ?????? ????? ? ???????) ????????? ??????????? ???...

  16. TeSLA workshop betrouwbaar toetsen op afstand

    NARCIS (Netherlands)

    Brouns, Francis; Janssen, José

    2017-01-01

    Presentatie ten behoeve van workshop betrouwbaar toetsen op afstand voor docenten van de Open Universiteit Nederland betrokken in de derde TeSLA pilot. Topics: toetsfraude, toetsdesign, technologie voor authenticatie en verificatie van auteurschap, TeSLA instrumenten.

  17. TeSLA e-assessment workshop pilot 2

    OpenAIRE

    Janssen, José

    2017-01-01

    Presentatie ten behoeve van de e-assessment workshop voor docenten van de Open Universiteit Nederland betrokken in de tweede TeSLA pilot. Topics: toetsfraude, toetsdesign, technologie voor authenticatie en verificatie van auteurschap, TeSLA instrument.

  18. De iep is weer te vertrouwen

    NARCIS (Netherlands)

    Hiemstra, J.A.; Beintema, N.

    2012-01-01

    De iep is door de iepziekte grotendeels uit Europa verdwenen. Mede dankzij Wagenings onderzoek zijn er nu resistente rassen op de markt. Wat nog ontbreekt is het vertrouwen van beheerders om de karakteristieke boom weer aan te planten. ‘Iepen waren synoniem met ellende.’

  19. TeV scale singlet dark matter

    International Nuclear Information System (INIS)

    Ponton, Eduardo; Randall, Lisa

    2009-01-01

    It is well known that stable weak scale particles are viable dark matter candidates since the annihilation cross section is naturally about the right magnitude to leave the correct thermal residual abundance. Many dark matter searches have focused on relatively light dark matter consistent with weak couplings to the Standard Model. However, in a strongly coupled theory, or even if the coupling is just a few times bigger than the Standard Model couplings, dark matter can have TeV-scale mass with the correct thermal relic abundance. Here we consider neutral TeV-mass scalar dark matter, its necessary interactions, and potential signals. We consider signals both with and without higher-dimension operators generated by strong coupling at the TeV scale, as might happen for example in an RS scenario. We find some potential for detection in high energy photons that depends on the dark matter distribution. Detection in positrons at lower energies, such as those PAMELA probes, would be difficult though a higher energy positron signal could in principle be detectable over background. However, a light dark matter particle with higher-dimensional interactions consistent with a TeV cutoff can in principle match PAMELA data.

  20. High performance p-i-n CdTe and CdZnTe detectors

    CERN Document Server

    Khusainov, A K; Ilves, A G; Morozov, V F; Pustovoit, A K; Arlt, R D

    1999-01-01

    A breakthrough in the performance of p-i-n CdTe and CdZnTe detectors is reported. The detector stability has been significantly improved, allowing their use in precise gamma and XRF applications. Detectors with energy resolution close to Si and Ge were produced operating with only -30--35 deg. C cooling (by a Peltier cooler of 15x15x10 mm size and a consumed power less than 5 W). Presently detectors with volume of up to 300 mm sup 3 are available. In terms of photoelectric effect efficiency it corresponds to HPGe detectors with volumes of about 1.5 cm sup 3. The possibilities of further improvement of CdTe and CdZnTe detector characteristics are discussed in this paper.

  1. CdTe and Cd1-xZnxTe for nuclear detectors: facts and fictions

    International Nuclear Information System (INIS)

    Fougeres, P.; Siffert, P.; Hageali, M.; Koebel, J.M.; Regal, R.

    1999-01-01

    Both CdTe and Cd 1-x Zn x Te (CZT) can be considered from their physical properties as very good materials for room temperature X- and γ-rays detection. However, despite years of intense material research, no significant advance has been made to help one to choose between both semiconductors. This paper reviews a few facts about CdTe and CZT to attempt to draw a real comparison between both. THM-CdTe and HPB-CZT have been grown and characterized in Strasbourg. Crystal growth, alloying effects, transport properties and defects are reviewed on the basis of our results and the published ones. The results show that it is still very difficult to claim which one is the best

  2. Local atomic interdiffusion in CdTe/HgCdTe multilayered structures

    International Nuclear Information System (INIS)

    Kim, Y.; Ourmazd, A.; Feldman, R.D.; Rentschler, J.A.; Taylor, D.W.; Austin, R.F.

    1989-01-01

    The authors combine chemical lattice imaging with digital pattern recognition to study atomic interdiffusion at individual CdTe/HgCdTe interfaces in multi-quantum well structures. In this way they obtain quantitative composition profiles for as grown samples, and investigate their development as a function of annealing temperature. The authors' results indicate that interdiffusion depends on the position of the quantum well with respect to the surface, beginning first at quantum wells close to the surface, and proceeding towards the substrate. The authors' approach allows the quantification of interdiffusion as a function of time, temperature, and distance from the surface. The implications of these results for the stability of CdTe/HgCdTe structures, and the interpretation of X-ray data are discussed

  3. Design and construction of a mode converter from TE10(rectangular) to TE11(circular)

    International Nuclear Information System (INIS)

    Tubbing, B.J.D.

    1984-08-01

    The design and manufacturing of a wavelength mode converter from the TE 10 (rectangular) mode in oversized rectangular to the TE 11 (circular) mode in oversized circular waveguide is described. A differential equation for the cross-sectional shape of the converter was solved numerically. A stainless-steel mandrel was produced on a numerically controlled milling machine. Sixteen converters were produced by means of electroforming on one mandrel. (Auth.)

  4. Effect of Te atmosphere annealing on the properties of CdZnTe single crystals

    International Nuclear Information System (INIS)

    Yu Pengfei; Jie Wanqi; Wang Tao

    2011-01-01

    Low-resistivity CdZnTe:In (CZT:In) single crystals were annealed under Te atmosphere according to the behaviors of deep-donor Te antisite. The results indicated that the star-like Cd inclusions were completely eliminated after 120 h annealing. Meanwhile, the resistivity is greatly enhanced. The resistivity of the slice annealed after 240 h was achieved as high as 1.8x10 11 Ω cm, five orders of magnitude higher than that of as-grown slice. It suggested that the deep-donor level Te antisites were successfully introduced to pin the Fermi level at the mid band-gap position. The IR transmittances of the slices were also improved, which increased as the annealing time increased. PL measurement revealed that the (D 0 ,X) peak representing high quality of CZT crystal appeared. It can be concluded that the quality of CZT crystals is obviously improved after annealing under Te atmosphere. - Highlights: → High resistivity is due to deep-donor level Te Cd . → The resistivity achieved was as high as 1.8x10 11 Ω cm. → Star-like inclusions are Cd inclusions. → (D 0 ,X) peak represents the improvement of the crystal quality.

  5. Fluctuations in induced charge introduced by Te inclusions within CdZnTe radiation detectors

    International Nuclear Information System (INIS)

    Bale, Derek S.

    2010-01-01

    Recently, homogenization theory based on a multiple-scale perturbation of the electron transport equation has been used to derive a mathematical framework for modeling the excess charge lost to Te inclusions within radiation detectors based on semi-insulating cadmium zinc telluride (CdZnTe). In that theory, the heterogeneous material is mathematically replaced by a homogenized CdZnTe crystal whose effective electron attenuation length incorporates the additional uniform electron trapping caused by the inclusions. In this paper, the homogenization theory is extended to incorporate fluctuations in the induced charge (i.e., charge collection nonuniformities) introduced by the random position and size distributions of a noncorrelated population of small (i.e, <20 μm) Te inclusions. Analysis of the effective parameters derived within the homogenized framework is used to develop a probability distribution of effective electron attenuation lengths, and therefore effective mobility-lifetime products, as a function of both the position and size distribution of Te inclusions. Example distributions are detailed for the case of an exponential size distribution at various number densities. Further, it is demonstrated that the inclusion-induced material nonuniformities derived in this paper can be numerically sampled efficiently, making them applicable to Monte Carlo device simulation of realistic CdZnTe detectors. Simulated charge induction maps and pulse-height spectra are presented and compared to recently published measurements.

  6. Molecular beam epitaxy of iodine-doped CdTe and (CdMg)Te

    Energy Technology Data Exchange (ETDEWEB)

    Fischer, F.; Waag, A.; Litz, Th.; Scholl, S.; Schmitt, M.; Landwehr, G. (Physikalisches Inst. der Univ. Wuerzburg (Germany)); Bilger, G. (Zentrum fuer Sonnenenergie und Wasserstofforschung, Stuttgart (Germany))

    1994-08-01

    The n-type doping of CdTe and (CdMg)Te by the use of the solid dopant source material ZnI[sub 2] is reported. Doping levels as high as 7x10[sup 18] cm[sup -3] have been obtained in CdTe with carrier mobilities around 500 cm[sup 2]/V[center dot]s at room temperature. For a dopant incorporation higher than 1x10[sup 19] cm[sup -3] the free carrier concentration decreases, indicating the onset of a compensation mechanism, which is observed in the case of chlorine and bromine doping, too. Preliminary experiments show that with increasing Mg concentration the free carrier concentration decreases. Nevertheless, CdMgTe with a magnesium concentration x=0.37 (band gap 2.2 eV at room temperature) can be doped up to 2x10[sup 17] cm[sup -3]. The existence of deep donor levels in this CdTe based ternary is not supposed to be the only reason for the reduction of the free carrier concentration. For high Mg support during molecular beam epitaxial (MBE) growth of wide gap (CdMg)Te layers, the ZnI[sub 2] incorporation is reduced, leading to low doping levels, too

  7. New developments in clinical applications of CdTe and CdZnTe detectors

    International Nuclear Information System (INIS)

    Scheiber, C.

    1996-01-01

    This review about the medical applications of CdTe and CdZnTe is an update on the 1992 paper (1992). This new paper is legitimized by the recent progress which has been made in this field. First of all, the usefulness of a new material, i.e. CdZnTe, has been demonstrated. While the two materials are still being improved, it seems as yet too early to debate which of CdTe:Cl or CdZnTe will be the best choice. Historical applications span over the past 18 years, involving devices like miniature probes for per-operative scintigraphy or the monitoring of physiological functions and, closer to us, appliances dedicated to bone densitometry, and have been expanding as such devices have become commercially available, for many years now. Newly available microelectronic circuitry allows 2D-arrays to be built for digital quantitative X-ray (chest, dental..) and for high-resolution gamma cameras. The clinical demand is very high, especially in the field of nuclear medicine. Although there already exist clinical demonstrators, the future of such CdTe applications depends on further reduction in material and device mounting costs. New perspectives concern XCT applications, but the data resulting from research work are kept for restricted use within industrial R and D laboratories. (orig.)

  8. Excitons in tunnel coupled CdTe and (Cd,Mn)Te quantum wells

    Energy Technology Data Exchange (ETDEWEB)

    Terletskii, Oleg; Ryabchenko, Sergiy; Tereshchenko, Oleksandr [Institute of Physics NASU, pr. Nauki 46, 03680 Kyiv (Ukraine); Sugakov, Volodymyr; Vertsimakha, Ganna [Institute for Nuclear Research NASU, pr. Nauki 47, 03680 Kyiv (Ukraine); Karczewski, Grzegorz [Institute of Physics PAS, Al. Lotnikow 32/46, PL-02-668 Warsaw (Poland)

    2017-05-15

    The photoluminescence (PL) from structures containing Cd{sub 0.95}Mn{sub 0.05}Te and CdTe quantum wells (QWs) separated by a narrow (1.94 nm) barrier was studied. The PL lines of comparable intensities from several possible exciton states were observed simultaneously at energy distances substantially exceeding kT. This means that the energy transfer in the studied systems is slower than the radiative recombination of the confined excitons. For the CdTe QW width of about 8.7-9 nm, indirect excitons with the electron and heavy hole chiefly localized in the CdTe and Cd{sub 1-x}Mn{sub x}Te QWs, respectively, were detected in the magnetic field. These indirect excitons have PL energy of about 10-20 meV above the PL line of the direct excitons in the CdTe QW. The observation of the PL from the indirect excitons which are not the lowest excitations in the structure is a distinctive feature of the system. Photoluminescence intensity dependence on the energy and the magnetic field. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  9. Anomalous Phase Change in [(GeTe)2/(Sb2Te3)]20 Superlattice Observed by Coherent Phonon Spectroscopy

    Science.gov (United States)

    Makino, K.; Saito, Y.; Mitrofanov, K.; Tominaga, J.; Kolobov, A. V.; Nakano, T.; Fons, P.; Hase, M.

    The temperature-dependent ultrafast coherent phonon dynamics of topological (GeTe)2/(Sb2Te3) super lattice phase change memory material was investigated. By comparing with Ge-Sb-Te alloy, a clear contrast suggesting the unique phase change behavior was found.

  10. Density of liquid Hg(1-x)Cd(x)Te

    Science.gov (United States)

    Chandra, D.; Holland, L. R.

    1983-01-01

    Negative thermal expansion has been established in liquid Hg(1-x)Cd(x)Te for x less than 0.2 employing a pycnometric method. Pure HgTe increases in density from its melting point at 670 C to a maximum value at 750 C, where normal thermal expansion progressively resumes. The dependence of density on temperature for liquid Hg(1-x)Cd(x)Te arises almost exclusively from the HgTe portion of the melt, while CdTe acts as a diluent. The temperature corresponding to the maximum density changes slightly with composition, increasing by about 5 C for x = 0.1.

  11. Zn2(TeO3Br2

    Directory of Open Access Journals (Sweden)

    Mats Johnsson

    2008-05-01

    Full Text Available Single crystals of dizinc tellurium dibromide trioxide, Zn2(TeO3Br2, were synthesized via a transport reaction in sealed evacuated silica tubes. The compound has a layered crystal structure in which the building units are [ZnO4Br] distorted square pyramids, [ZnO2Br2] distorted tetrahedra, and [TeO3E] tetrahedra (E being the 5s2 lone pair of Te4+ joined through sharing of edges and corners to form layers of no net charge. Bromine atoms and tellurium lone pairs protrude from the surfaces of each layer towards adjacent layers. This new compound Zn2(TeO3Br2 is isostructural with the synthetic compounds Zn2(TeO3Cl2, CuZn(TeO32, Co2(TeO3Br2 and the mineral sophiite, Zn2(SeO3Cl2.

  12. Properties of Hg1-xCdxTe epitaxial films grown on (211)CdTe and (211)CdZnTe

    International Nuclear Information System (INIS)

    Di Stefano, M.C.; Gilabert, U.; Heredia, E.; Trigubo, A.B.

    2004-01-01

    Hg 1-x Cd x Te (MCT) epitaxial films have been grown employing single crystalline substrates of CdTe and Cd 0.96 Zn 0.04 Te with (211)Cd and (211)Te crystalline orientations. The Isothermal Vapor Phase Epitaxy (ISOVPE) technique without Hg overpressure has been used for the epitaxial growth. Substrates and films were characterized by optical microscopy, chemical etching and X ray diffraction (Laue technique). The electrical properties were determined by Hall effect measurements. The characterization results allowed to evaluate the crystalline quality of MCT films. (copyright 2004 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  13. TeV gravity in four dimensions?

    International Nuclear Information System (INIS)

    Calmet, Xavier; Hsu, Stephen D.H.

    2008-01-01

    We describe a model in which the fundamental scale M * of the theory which unifies gravity and quantum mechanics is in the TeV range, but without requiring additional spacetime dimensions. The weakness of gravity at low energies is due to a large vacuum expectation of a dilaton like field. The model requires a small dimensionless parameter (the self-coupling of the dilaton) but no fine-tuning. We discuss in detail the dynamical assumptions about non-perturbative quantum gravity required within the model. We observe that M * could be quite small, less than a TeV, and that the model could lead to copious strong coupling effects at the LHC. However, semiclassical black holes will not be produced

  14. Optically detected SdH oscillations in CdTe/(CdMg)Te and CdTe/(CdMnMg)Te modulation doped quantum wells

    International Nuclear Information System (INIS)

    Shen, J.X.; Ossau, W.; Fischer, F.; Waag, A.; Landwehr, G.

    1995-01-01

    Oscillations of photoluminescence properties in external magnetic fields are investigated in CdTe modulation doped quantum wells. The oscillatory behaviour of the luminescence intensity, the line width and the g factor is due to many-body effects in the 2-dimensional electron gas. The oscillation of photoluminescence intensity can be easily used as optically detected Shubnikov de Haas effect to determine the electron concentration in quantum wells without contacts. (author)

  15. Optically detected SdH oscillations in CdTe/(CdMg)Te and CdTe/(CdMnMg)Te modulation doped quantum wells

    Energy Technology Data Exchange (ETDEWEB)

    Shen, J.X.; Ossau, W.; Fischer, F.; Waag, A.; Landwehr, G. [Physikalisches Institut der Uniwersitaet Wuerzburg, Wuerzburg (Germany)

    1995-12-31

    Oscillations of photoluminescence properties in external magnetic fields are investigated in CdTe modulation doped quantum wells. The oscillatory behaviour of the luminescence intensity, the line width and the g factor is due to many-body effects in the 2-dimensional electron gas. The oscillation of photoluminescence intensity can be easily used as optically detected Shubnikov de Haas effect to determine the electron concentration in quantum wells without contacts. (author). 5 refs, 3 figs, 1 tab.

  16. Multi-TeV muon colliders

    International Nuclear Information System (INIS)

    Neuffer, D.

    1986-01-01

    The possibility that muons may be used in a future generation of high-energy high-luminosity μ + μ - and μ - p colliders is presented. The problem of collecting and cooling high-intensity muon bunches is discussed and ionization cooling is described. High-energy collider scenarios are outlined; muon colliders may become superior to electron colliders in the multi-TeV energy range

  17. Correction of diagnostic x-ray spectra measured with CdTe and CdZnTe detectors

    Energy Technology Data Exchange (ETDEWEB)

    Matsumoto, M [Osaka Univ., Suita (Japan). Medical School; Kanamori, H; Toragaito, T; Taniguchi, A

    1996-07-01

    We modified the formula of stripping procedure presented by E. Di. Castor et al. We added the Compton scattering and separated K{sub {alpha}} radiation of Cd and Te (23 and 27keV, respectively). Using the new stripping procedure diagnostic x-ray spectra (object 4mm-Al) of tube voltage 50kV to 100kV for CdTe and CdZnTe detectors are corrected with comparison of those spectra for the Ge detector. The corrected spectra for CdTe and CdZnTe detectors coincide with those for Ge detector at lower tube voltage than 70kV. But the corrected spectra at higher tube voltage than 70kV do not coincide with those for Ge detector. The reason is incomplete correction for full energy peak efficiencies of real CdTe and CdZnTe detectors. (J.P.N.)

  18. TeV gravity at neutrino telescopes

    International Nuclear Information System (INIS)

    Illana, J.I.; Masip, M.; Meloni, D.

    2005-01-01

    Cosmogenic neutrinos reach the Earth with energies around 10 9 GeV, and their interactions with matter will be measured in upcoming experiments (Auger, IceCube). Models with extra dimensions and the fundamental scale at the TeV could imply signals in these experiments. In particular, the production of microscopic black holes by cosmogenic neutrinos has been extensively studied in the literature. Here we make a complete analysis of gravity-mediated interactions at larger distances, where they can be calculated in the eikonal approximation. In these processes a neutrino of energy E ν interacts elastically with a parton inside a nucleon, loses a small fraction y of its energy, and starts a hadronic shower of energy yE ν ν . We analyze the ultraviolet dependence and the relevance of graviton emission in these processes, and show that they are negligible. We also study the energy distribution of cosmogenic events in AMANDA and IceCube and the possibility of multiple-bang events. For any neutrino flux, the observation of an enhanced rate of neutral current events above 100 TeV in neutrino telescopes could be explained by TeV-gravity interactions. The values of the fundamental scale of gravity that IceCube could reach are comparable to those to be explored at the LHC

  19. Surface preparation effects on efficient indium-tin-oxide-CdTe and CdS-CdTe heterojunction solar cells

    Science.gov (United States)

    Werthen, J. G.; Fahrenbruch, A. L.; Bube, R. H.; Zesch, J. C.

    1983-05-01

    The effects of CdTe surface preparation and subsequent junction formation have been investigated through characterization of ITO/CdTe and CdS/CdTe heterojunction solar cells formed by electron beam evaporation of indium-tin-oxide (ITO) and CdS onto single crystal p-type CdTe. Surfaces investigated include air-cleaved (110) surfaces, bromine-in-methanol etched (110) and (111) surfaces, and teh latter surfaces subjected to a hydrogen heat treatment. Both air-cleaved and hydrogen heat treated surfaces have a stoichiometric Cd to Te ratio. The ITO/CdTe junction formation process involves an air heat treatment, which ahs serious effects on the behavior of junctions formed on these surfaces. Etched surfaces which have a large excesss of Te, are less affected by the junction formation process and result in ITO/CdTe heterojunctions with solar efficiencies of 9% (Vsc =20 mA/cm2). Use of low-doped CdTe results in junctions characterized by considerably larger open-circuit votages (Voc =0.81 V) which are attributable to increasing diode factors caused by a shift from interfacial recombination to recombination in the depletion region. Resulting solar efficiencies reach 10.5% which is the highest value reported to date for a genuine CdTe heterojunction, CdS/CdTe heterojunctions show a strong dependence on CdTe surface condition, but less influence on the junction formation process. Solar efficiencies of 7.5% on an etched and heat treated surface are observed. All of these ITO/CdTe and CdS/CdTe heterojunctions have been stable for at least 10 months.

  20. New chalcogenide glasses in the CdTe-AgI-As{sub 2}Te{sub 3} system

    Energy Technology Data Exchange (ETDEWEB)

    Kassem, M. [Univ. Picardie Jules Verne, F-80000 Amiens (France); Le Coq, D., E-mail: david.lecoq@univ-littoral.fr [Univ. Lille Nord de France, F-59000 Lille (France); ULCO, LPCA, EA 4493, F-59140 Dunkerque (France); Boidin, R.; Bychkov, E. [Univ. Lille Nord de France, F-59000 Lille (France); ULCO, LPCA, EA 4493, F-59140 Dunkerque (France)

    2012-02-15

    Highlights: Black-Right-Pointing-Pointer Determination of the glass-forming region in the pseudo-ternary CdTe-AgI-As{sub 2}Te{sub 3} system. Black-Right-Pointing-Pointer Characterization of macroscopic properties of the new CdTe-AgI-As{sub 2}Te{sub 3} glasses. Black-Right-Pointing-Pointer Characterization of the total conductivity of CdTe-AgI-As{sub 2}Te{sub 3} glasses. Black-Right-Pointing-Pointer Comparison between the selenide and telluride equivalent systems. -- Abstract: Chalcogenide glasses in the pseudo-ternary CdTe-AgI-As{sub 2}Te{sub 3} system were synthesized and the glass-forming range was determined. The maximum content of CdTe in this glass system was found to be equal to 15 mol.%. The macroscopic characterizations of samples have consisted in Differential Scanning Calorimetry, density, and X-ray diffraction measurements. The cadmium telluride addition does not generate any significant change in the glass transition temperature but the resistance of binary AgI-As{sub 2}Te{sub 3} glasses towards crystallisation is estimated to be decreasing on the base of {Delta}T = T{sub x} - T{sub g} parameter. The total electrical conductivity {sigma} was measured by complex impedance spectroscopy. First, the CdTe additions in the (AgI){sub 0.5}(As{sub 2}Te{sub 3}){sub 0.5} host glass, (CdTe){sub x}(AgI){sub 0.5-x/2}(As{sub 2}Te{sub 3}){sub 0.5-x/2} lead to a conductivity decrease at x {<=} 0.05. Then, the behaviour is reversed at 0.05 {<=} x {<=} 0.15. The obtained results are discussed by comparison with the equivalent selenide system.

  1. Optical spectroscopy and Fermi surface studies of BiTeCl and BiTeBr

    Science.gov (United States)

    Martin, Catalin; Suslov, A. V.; Buvaev, S.; Hebard, A. F.; Bugnon, Philippe; Berger, Helmuth; Magrez, Arnaud; Tanner, D. B.

    2014-03-01

    The observation of a large bulk Rashba effect in the non-centrosymmetric semiconductors BiTeX(X=Cl, Br, I) has stimulated the interest in these sys- tems, as promising candidates for studying spin related phenomena and for the realization of spin devices. Here we present a comparative study of the electronic properties of BiTeCl and BiTeBr, determined from temperature dependent infrared spectroscopy and Shubnikov-de Haas oscillations. In par- ticular, we compare the angle dependence of quantum oscillations between the two compounds and discuss possible differences between the topology of their Fermi surfaces. Supported by NSF Cooperative Agreement DMR-1157490 to the National High Magnetic Field Laboratory.

  2. Performance and Metastability of CdTe Solar Cells with a Te Back-Contact Buffer Layer

    Science.gov (United States)

    Moore, Andrew

    Thin-film CdTe photovoltaics are quickly maturing into a viable clean-energy solution through demonstration of competitive costs and performance stability with existing energy sources. Over the last half decade, CdTe solar technology has achieved major gains in performance; however, there are still aspects that can be improved to progress toward their theoretical maximum efficiency. Perhaps equally valuable as high photovoltaic efficiency and a low levelized cost of energy, is device reliability. Understanding the root causes for changes in performance is essential for accomplishing long-term stability. One area for potential performance enhancement is the back contact of the CdTe device. This research incorporated a thin-film Te-buffer layer into the contact structure, between the CdTe and contact metal. The device performance and characteristics of many different back contact configurations were rigorously studied. CdTe solar cells fabricated with the Te-buffer contact showed short-circuit current densities and open-circuit voltages that were on par with the traditional back-contacts used at CSU. However, the Te-buffer contact typically produced 2% larger fill-factors on average, leading to greater conversation efficiency. Furthermore, using the Te buffer allowed for incorporation of 50% less Cu, which is used for p-type doping but is also known to decrease lifetime and stability. This resulted in an additional 3% fill-factor gain with no change in other parameters compared to the standard-Cu treated device. In order to better understand the physical mechanisms of the Te-buffer contact, electrical and material properties of the Te layer were extracted and used to construct a simple energy band diagram. The Te layer was found to be highly p-type (>1018 cm-3) and possess a positive valence-band offset of 0.35-0.40 eV with CdTe. An existing simulation model incorporating the Te-layer properties was implemented and validated by comparing simulated results of CdTe

  3. Thermal annealing studies of GeTe-Sb2Te3 alloys with multiple interfaces

    Directory of Open Access Journals (Sweden)

    Valeria Bragaglia

    2017-08-01

    Full Text Available A high degree of vacancy ordering is obtained by annealing amorphous GeTe-Sb2Te3 (GST alloys deposited on a crystalline substrate, which acts as a template for the crystallization. Under annealing the material evolves from amorphous to disordered rocksalt, to ordered rocksalt with vacancies arranged into (111 oriented layers, and finally converts into the stable trigonal phase. The role of the interface in respect to the formation of an ordered crystalline phase is studied by comparing the transformation stages of crystalline GST with and without a capping layer. The capping layer offers another crystallization interface, which harms the overall crystalline quality.

  4. Orbital-dependent Rashba coupling in bulk BiTeCl and BiTeI

    KAUST Repository

    Zhu, Zhiyong; Cheng, Yingchun; Schwingenschlö gl, Udo

    2013-01-01

    By all-electron ab initio calculations, the layered polar semiconductor BiTeCl is shown to host giant bulk Rashba spin splitting, similar to the recently reported compound BiTeI. In both materials, the standard Rashba–Bychkov model is no longer applicable, because of huge band extrema shifts even in the absence of spin–orbit coupling and a strong momentum dependence of the Rashba coupling constant (αR). By assuming αR to be orbital dependent, a phenomenological extension of the Rashba–Bychkov model is proposed which explains the splitting behavior of states with small in-plane momentum.

  5. Improvements in 130Te double beta decay search with cryogenic TeO2 array detectors

    International Nuclear Information System (INIS)

    Alessandrello, A.; Brofferio, C.; Bucci, C.; Caspani, P.; Cremonesi, O.; Fiorini, E.; Giuliani, A.; Nucciotti, A.; Pavan, M.; Pessina, G.; Previtali, E.; Zanotti, L.

    1996-01-01

    Single crystal TeO 2 bolometers have been used since 5 years ago to search for neutrinoless DBD of 130 Te. During the last year, our group has been studying and preparing the first array of 4 crystals, 340 g each, opening this technique to new frontiers in rare events' physics. The results and perspectives of this second generation cryogenic detectors are here reported and discussed, with particular emphasis on the peculiarities which make them feasible for a consistent upgrading of our previous result in DBD search. (orig.)

  6. Orbital-dependent Rashba coupling in bulk BiTeCl and BiTeI

    KAUST Repository

    Zhu, Zhiyong

    2013-02-06

    By all-electron ab initio calculations, the layered polar semiconductor BiTeCl is shown to host giant bulk Rashba spin splitting, similar to the recently reported compound BiTeI. In both materials, the standard Rashba–Bychkov model is no longer applicable, because of huge band extrema shifts even in the absence of spin–orbit coupling and a strong momentum dependence of the Rashba coupling constant (αR). By assuming αR to be orbital dependent, a phenomenological extension of the Rashba–Bychkov model is proposed which explains the splitting behavior of states with small in-plane momentum.

  7. HgTe-CdTe phase diagrams calculation by RAS model

    International Nuclear Information System (INIS)

    Hady, A.A.A.

    1986-11-01

    The model of Regular Associated Solutions (RAS) for binary solution, which extended onto the ternary solution was used for Mercury-Cadnium-Tellurim phase diagrams calculations. The function of dissociation parameters is used here as a function of temperature and it is independent of composition. The ratio of mole fractions has a weak dependence on temperature and is not neglected. The calculated liquidus binary temperature and the experimental one are so fitted to give the best values of parameters used to calculate the HgTe-CdTe phase diagrams. (author)

  8. Terahertz emission from CdHgTe/HgTe quantum wells with an inverted band structure

    Energy Technology Data Exchange (ETDEWEB)

    Vasilyev, Yu. B., E-mail: Yu.Vasilyev@mail.ioffe.ru [Russian Academy of Sciences, Ioffe Physical–Technical Institute (Russian Federation); Mikhailov, N. N. [Russian Academy of Sciences, Rzhanov Institute of Semiconductor Physics, Siberian Branch (Russian Federation); Vasilyeva, G. Yu.; Ivánov, Yu. L.; Zakhar’in, A. O.; Andrianov, A. V. [Russian Academy of Sciences, Ioffe Physical–Technical Institute (Russian Federation); Vorobiev, L. E.; Firsov, D. A. [Peter the Great Saint-Petersburg Polytechnic University (Russian Federation); Grigoriev, M. N. [Ustinov Baltic State Technical University “VOENMEKh” (Russian Federation); Antonov, A. V.; Ikonnikov, A. V.; Gavrilenko, V. I. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation)

    2016-07-15

    The terahertz electroluminescence from Cd{sub 0.7}Hg{sub 0.3}Te/HgTe quantum wells with an inverted band structure in lateral electric fields is experimentally detected and studied. The emission-spectrum maximum for wells 6.5 and 7 nm wide is near 6 meV which corresponds to interband optical transitions. The emission is explained by state depletion in the valence band and conduction band filling due to Zener tunneling, which is confirmed by power-law current–voltage characteristics.

  9. Precipitation of Ag{sub 2}Te in the thermoelectric material AgSbTe{sub 2}

    Energy Technology Data Exchange (ETDEWEB)

    Sugar, Joshua D. [Materials Physics Department, Sandia National Laboratories, Livermore, CA (United States)], E-mail: jdsugar@sandia.gov; Medlin, Douglas L. [Materials Physics Department, Sandia National Laboratories, Livermore, CA (United States)

    2009-06-10

    The microstructure of AgSbTe{sub 2}, prepared by solidification, is investigated using electron microscopy. During solidification and thermal treatment, the material separates into a two-phase mixture of a rocksalt phase, which is Ag{sub 22}Sb{sub 28}Te{sub 50}, and silver telluride, Ag{sub 2}Te. Ag{sub 2}Te formation results either from eutectic solidification (large lamellar structures), or by solid-state precipitation (fine-scale particles). The crystal structure of the AgSbTe{sub 2} phase determined by electron diffraction is consistent with a rocksalt structure that has a disordered cation sublattice. A preferred crystallographic orientation relationship at the interface between the matrix and the low-temperature monoclinic Ag{sub 2}Te phase is defined and discussed. This orientation relationship is observed for both second-phase morphologies. In both cases, the orientation relationship originates from a topotactic (cube-on-cube) alignment of the Te sublattices in the initially cubic Ag{sub 2}Te and the matrix at elevated temperature. This Te sublattice alignment is retained as the Ag{sub 2}Te undergoes a cubic-to-monoclinic transformation during cooling. This orientation relationship is observed for both second-phase morphologies.

  10. Effects of Te inclusions on charge-carrier transport properties in CdZnTe radiation detectors

    International Nuclear Information System (INIS)

    Gu, Yaxu; Rong, Caicai; Xu, Yadong; Shen, Hao; Zha, Gangqiang; Wang, Ning; Lv, Haoyan; Li, Xinyi; Wei, Dengke; Jie, Wanqi

    2015-01-01

    Highlights: • This work reveals the behaviors of Te inclusion in affecting charge-carrier transport properties in CdZnTe detectors for the first time and analysis the mechanism therein. • The results show that charge collection efficiencies in Te inclusion degraded regions experience fast ascent under low biases and slow descent at high applied biases, which deviates from the Hecht rule. • This phenomenon is attributed to the competitive influence of two mechanisms under different biases, namely charge carrier trapping due to uniformly distributed point defects and Te inclusion induced transient charge loss. • A modified Hecht equation is further proposed to explain the effects of high-density localized defects, say Te inclusions, on the charge collection efficiency. • We believe that this research has wide appeal to analyze the macroscopic defects and their influence on charge transport properties in semiconductor radiation detectors. - Abstract: The influence of tellurium (Te) inclusions on the charge collection efficiency in cadmium zinc telluride (CdZnTe or CZT) detectors has been investigated using ion beam induced charge (IBIC) technique. Combining the analysis of infrared transmittance image, most of the low charge collection areas in the IBIC images prove the existence of Te inclusions. To further clarify the role of Te inclusions on charge transport properties, bias dependent local IBIC scan was performed on Te inclusion related regions from 20 V to 500 V. The result shows that charge collection efficiencies in Te inclusion degraded regions experience fast ascent under low biases and slow descent at high applied biases, which deviates from Hecht rule. This behavior is attributed to the competitive influence of two mechanisms under different biases, namely charge carrier trapping due to uniformly distributed point defects and Te inclusion induced transient charge loss. A modified Hecht equation is further proposed to explain the effects of high

  11. Preliminary study of CdTe and CdTe:Cu thin films nanostructures deposited by using DC magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Marwoto, Putut; Made, D. P. Ngurah; Sugianto [Departement of Physics, Faculty of Mathematics and Natural Sciences, Universitas Negeri Semarang, Gunungpati, Semarang 50229 Jawa Tengah (Indonesia); Wibowo, Edy; Astuti, Santi Yuli; Aryani, Nila Prasetya [Materials Research Group, Laboratory of Thin Film, Department of Physics, Universitas Negeri Semarang, Gunungpati, Semarang 50229 Jawa Tengah (Indonesia); Othaman, Zulkafli [Departement of Physics, Universiti Teknologi Malaysia (UTM), Skudai, Johor Bahru (Malaysia)

    2013-09-03

    Growth and properties of CdTe and CdTe:Cu thin films nanostrucures deposited by using dc magnetron sputtering are reported. Scanning electron microscope (SEM) was used to observe the surface morphologies of the thin films. At growth conditions of 250 °C and 14 W, CdTe films did not yet evenly deposited. However, at growth temperature and plasma power of 325 °C and 43 W, both CdTe and CdTe:Cu(2%) have deposited on the substrates. In this condition, the morphology of the films indicate that the films have a grain-like nanostructures. Grain size diameter of about 200 nm begin to appear on top of the films. Energy Dispersive X-rays spectroscopy (EDX) was used to investigate chemical elements of the Cu doped CdTe film deposited. It was found that the film deposited consist of Cd, Te and Cu elements. XRD was used to investigate the full width at half maximum (FWHM) values of the thin films deposited. The results show that CdTe:Cu(2%) thin film has better crystallographic properties than CdTe thin film. The UV-Vis spectrometer was used to investigate the optical properties of thin films deposited. The transmittance spectra showed that transmittance of CdTe:Cu(2%) film is lower than CdTe film. It was found that the bandgap energy of CdTe and CdTe:Cu(2%) thin films of about 1.48 eV.

  12. HgCdTe photovoltaic detectors on Si substrates

    International Nuclear Information System (INIS)

    Zanio, K.R.; Bean, R.C.

    1988-01-01

    HgCdTe photovoltaic detectors have been fabricated on Si substrates through intermediate CdTe/GaAs layers. Encapsulation of the GaAs between the CdTe and Si prevents unintentional doping of the HgCdTe by Ga and As. Uniform epitaxial GaAs is grown on three inch diameter Si substrates. Detectors on such large area Si substrates will offer hybrid focal plane arrays whose dimensions are not limited by the difference between the coefficients of thermal expansion of the Si signal processor and the substrate for the HgCdTe detector array. The growth of HgCdTe detectors on the Si signal processors for monolithic focal plane arrays is also considered. 40 references

  13. Evaluation of Tp-Te Interval and Tp-Te/QT Ratio in Patients with Coronary Slow Flow Tp-Te/QT Ratio and Coronary Slow Flow.

    Science.gov (United States)

    Tenekecioglu, Erhan; Karaagac, Kemal; Yontar, Osman Can; Agca, Fahriye Vatansever; Ozluk, Ozlem Arican; Tutuncu, Ahmet; Arslan, Burhan; Yilmaz, Mustafa

    2015-06-01

    Coronary slow flow (CSF) phenomenon is described by angiographically normal coronary arteries with delayed opacification of the distal vasculature. Several studies have suggested that the interval from the peak to the end of the electrocardiographic T wave (Tp-Te) may correspond to the transmural dispersion of the repolarization and that increased Tp-Te interval and Tp-Te/QT ratio are associated with malignant ventricular arrhythmias. The aim of this study was to evaluate the ventricular repolarization by using Tp-Te interval and Tp-Te/QT ratio in patients with CSF. This study included 50 CSF patients (40 male, mean age 48.6±12.5 years) and 40 control individuals (23 male, mean age 47.8±12.5 years). Tp-Te interval and Tp-Te/QT ratio were measured from the 12-lead electrocardiogram. These parameters were compared in groups. Baseline characteristics of the study groups were comparable. In electrocardiographic parameters analysis, QT and corrected QT were similar in CSF patients compared to the controls (357±35.2 vs 362±38.0 milliseconds and 419±25.8 vs 430±44.2 milliseconds, all p value >0.05). Tp-Te interval, Tp-Te/QT and Tp-Te/QTc ratio were significantly higher in CSF patients (85±13.7 vs 74±9.9 milliseconds and 0.24±0.03 vs 0.20±0.02 and 0.20±0.03 vs 0.17±0.02 all p value ratio are prolonged in patients with CSF.

  14. Second harmonic generation in Te crystal using free electron laser

    CERN Document Server

    Yamauchi, T; Minehara, E J

    2002-01-01

    The second harmonic generation signal converted from the fundamental wavelength of 22 mu m of a free electron laser was observed for the first time using a birefringent Te crystal. The experimental conversion efficiency of Te crystal for second harmonic generation is 0.53%, which is equivalent to the theoretical value within a factor of 2. The Te crystal has been incorporated into an autocorrelator system to measure the micro-pulse width of infrared free electron laser successfully. (author)

  15. The optical properties of TeO2-Based Glasses

    International Nuclear Information System (INIS)

    Sahar, M.R.; Isahak, R.

    1994-01-01

    A series of binary glasses based on TeO2-PbCl2 has been prepared and their spectroscopy in the UV-Visible and IR regions has been investigated. It was found that the IR cut-off edge can go beyond 7μm and are largely influenced by the absorption due to Te-O-Te stretching vibrations around 638-644 cmsup -1 peaks

  16. The optical properties of TeO2-Based Glasses

    Energy Technology Data Exchange (ETDEWEB)

    Sahar, M R; Isahak, R [University Technology of Malaysia, Skudai Johor (Malaysia)

    1994-03-01

    A series of binary glasses based on TeO2-PbCl2 has been prepared and their spectroscopy in the UV-Visible and IR regions has been investigated. It was found that the IR cut-off edge can go beyond 7{mu}m and are largely influenced by the absorption due to Te-O-Te stretching vibrations around 638-644 cmsup -1 peaks.

  17. Process for manufacture of Te microwire in glass insulation

    International Nuclear Information System (INIS)

    Bodiul, Pavel; Nicolaeva, Alibina; Konopko, Leonid; Bondarciuc, Nicolae

    2010-01-01

    The invention relates to the manufacturing of microwires in glass insulation and can be used in electronics and in the manufacturing of thermoelectrodes for thermoelectric sensors. The process for manufacture of Te microwire in glass insulation consists in softening the Te sample and its pulling in glass insulation. Near the microwire pulling zone through the furnace is maintained a temperature of 430-440 degrees Celsius, which causes the solidification firstly of Te microwire, and then of glass insulation. The result of the invention is to obtain Te microwires in glass insulation of high quality with a diameter of 50-100 μm and a length of 3-15 cm.

  18. HgSe(Te)-HgHal2 systems

    International Nuclear Information System (INIS)

    Pan'ko, V.V.; Khudolij, V.A.; Voroshilov, Yu.V.

    1989-01-01

    Using the methods of differential thermal and X-ray phase analyses the character of chemical interaction in the systems HgTe(Se)-HgHal 2 , where Hal is Cl, Br, I, is investigated. Formation of compounds Hg 3 Se 2 Hal 2 , Hg 3 Te 2 Hal 2 , Hg 3 TeCl 4 and Hg 3 TeBr 4 in these systems is established. The phase diagrams of the studied systems are presented. The parameters of elementary cells of the compounds with the unknown structure, as well as their unknown physicochemical properties, are determined

  19. Characterization of CdZnTe ambient temperature detectors

    International Nuclear Information System (INIS)

    Lavietes, A.

    1994-09-01

    A great deal of interest has been generated in the use of cadmium telluride (CdTe) and cadmium zinc telluride (CdZnTe) detectors for ambient temperature detection of radionuclides. The addition of zinc to CdTe provides several benefits that enhance the materials operational characteristics at ambient temperature. Recent movement in the industry is to produce larger volume detectors using CdZnTe without much known about the effects of larger geometry on performance. The purpose of this study is to get an idea of the relationship of detector performance to both area and thickness variations

  20. Homogeneous CdTe quantum dots-carbon nanotubes heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Vieira, Kayo Oliveira [Grupo de Pesquisa em Química de Materiais – (GPQM), Departamento de Ciências Naturais, Universidade Federal de São João del-Rei, Campus Dom Bosco, Praça Dom Helvécio, 74, CEP 36301-160, São João del-Rei, MG (Brazil); Bettini, Jefferson [Laboratório Nacional de Nanotecnologia, Centro Nacional de Pesquisa em Energia e Materiais, CEP 13083-970, Campinas, SP (Brazil); Ferrari, Jefferson Luis [Grupo de Pesquisa em Química de Materiais – (GPQM), Departamento de Ciências Naturais, Universidade Federal de São João del-Rei, Campus Dom Bosco, Praça Dom Helvécio, 74, CEP 36301-160, São João del-Rei, MG (Brazil); Schiavon, Marco Antonio, E-mail: schiavon@ufsj.edu.br [Grupo de Pesquisa em Química de Materiais – (GPQM), Departamento de Ciências Naturais, Universidade Federal de São João del-Rei, Campus Dom Bosco, Praça Dom Helvécio, 74, CEP 36301-160, São João del-Rei, MG (Brazil)

    2015-01-15

    The development of homogeneous CdTe quantum dots-carbon nanotubes heterostructures based on electrostatic interactions has been investigated. We report a simple and reproducible non-covalent functionalization route that can be accomplished at room temperature, to prepare colloidal composites consisting of CdTe nanocrystals deposited onto multi-walled carbon nanotubes (MWCNTs) functionalized with a thin layer of polyelectrolytes by layer-by-layer technique. Specifically, physical adsorption of polyelectrolytes such as poly (4-styrene sulfonate) and poly (diallyldimethylammonium chloride) was used to deagglomerate and disperse MWCNTs, onto which we deposited CdTe quantum dots coated with mercaptopropionic acid (MPA), as surface ligand, via electrostatic interactions. Confirmation of the CdTe quantum dots/carbon nanotubes heterostructures was done by transmission and scanning electron microscopies (TEM and SEM), dynamic-light scattering (DLS) together with absorption, emission, Raman and infrared spectroscopies (UV–vis, PL, Raman and FT-IR). Almost complete quenching of the PL band of the CdTe quantum dots was observed after adsorption on the MWCNTs, presumably through efficient energy transfer process from photoexcited CdTe to MWCNTs. - Highlights: • Highly homogeneous CdTe-carbon nanotubes heterostructures were prepared. • Simple and reproducible non-covalent functionalization route. • CdTe nanocrystals homogeneously deposited onto multi-walled carbon nanotubes. • Efficient energy transfer process from photoexcited CdTe to MWCNTs.

  1. The system Sb2Te3-InS

    International Nuclear Information System (INIS)

    Safarov, M.G.; Gamidov, R.S.; Poladov, P.M.

    1991-01-01

    The system Sb 2 Te 3 -InS was investigated by the methods of physicochemical analysis. Its state diagram was constructed. It represents the stable diagonal of the mutual ternary system InTe-Sb 2 Te 3 -Sb 2 S 3 -InS. It was established that limited regions of α- and β-solid solutions on the basis of Sb 2 Te 3 and InS, achieving 15.5 and 8 mol.% respectively, formed in the system. Lattice periods of α- and β-solid solutions, their lattice volumes, number of atoms in them and densities were calculated

  2. ZnSe/ZnSeTe Superlattice Nanotips

    Directory of Open Access Journals (Sweden)

    Young SJ

    2010-01-01

    Full Text Available Abstract The authors report the growth of ZnSe/ZnSeTe superlattice nanotips on oxidized Si(100 substrate. It was found the nanotips exhibit mixture of cubic zinc-blende and hexagonal wurtzite structures. It was also found that photoluminescence intensities observed from the ZnSe/ZnSeTe superlattice nanotips were much larger than that observed from the homogeneous ZnSeTe nanotips. Furthermore, it was found that activation energies for the ZnSe/ZnSeTe superlattice nanotips with well widths of 16, 20, and 24 nm were 76, 46, and 19 meV, respectively.

  3. CdTe ambulatory ventricular function monitor

    International Nuclear Information System (INIS)

    Lazewatsky, J.L.; Alpert, N.M.; Moore, R.H.; Boucher, C.A.; Strauss, H.W.

    1979-01-01

    A prototype device consisting of two arrays of CdTe detectors, ECG amplifiers and gate, microprocessor, and tape recorder was devised to record simultaneous ECG and radionuclide blood pool data from the left ventricle for extended periods during normal activity. The device is intended to record information concerning both normal and abnormal physiology of the heart and to permit the evaluation of new pharmaceuticals under everyday conditions. Preliminary results indicate that the device is capable of recording and reading out data from both phantoms and patients

  4. Pixelated CdZnTe drift detectors

    DEFF Research Database (Denmark)

    Kuvvetli, Irfan; Budtz-Jørgensen, Carl

    2005-01-01

    A technique, the so-called Drift Strip Method (DSM), for improving the CdZnTe detector energy response to hard X-rays and gamma-rays was applied as a pixel geometry. First tests have confirmed that this detector type provides excellent energy resolution and imaging performance. We specifically...... report on the performance of 3 mm thick prototype CZT drift pixel detectors fabricated using material from eV-products. We discuss issues associated with detector module performance. Characterization results obtained from several prototype drift pixel detectors are presented. Results of position...

  5. TeV gravity at neutrino telescopes

    CERN Document Server

    Illana, J I; Meloni, D

    2005-01-01

    Cosmogenic neutrinos reach the Earth with energies around 10^9 GeV, and their interactions with matter will be measured in upcoming experiments (Auger, IceCube). Models with extra dimensions and the fundamental scale at the TeV could imply signals in these experiments. In particular, the production of microscopic black holes by cosmogenic neutrinos has been extensively studied in the literature. Here we make a complete analysis of gravity-mediated interactions at larger distances, where they can be calculated in the eikonal approximation. In these processes a neutrino of energy E_\

  6. BOREAS TE-11 Leaf Gas Exchange Measurements

    Science.gov (United States)

    Hall, Forrest G. (Editor); Papagno, Andrea (Editor); Saugier, Bernard; Pontailler, J. Y.

    2000-01-01

    The Boreal Ecosystem-Atmospheric Study (BOREAS) TE-11 (Terrestrial Ecology) team collected several data sets in support of its efforts to characterize and interpret information on the sap flow, gas exchange, and lichen photosynthesis of boreal vegetation and meteorological data of the area studied. This data set contains measurements of assimilation and transpiration conducted at the Old Jack Pine (OJP) site during the growing seasons of 1993 and 1994. The data are stored in ASCII files. The data files are available on a CD-ROM (see document number 20010000884), or from the Oak Ridge National Laboratory (ORNL) Distributed Active Archive Center (DAAC).

  7. Standard model beyond the TeV

    International Nuclear Information System (INIS)

    Aurenche, P.

    1987-01-01

    The phenomenology of the standard model in the hadronic reactions in the 10 TeV range is described. The predictions of the model concerning the hadronic cross sections being based on the parton model, we first discuss the behaviour of the structure functions at the low values of X (x > 10 -4 ) which are attained at these energies and we show that the development of the leading logarithms equations allow us to calculate them. The production of W, Z, and gauge bosons and gauge boson pairs are reviewed. The Higgs boson production is discussed in detail according to his mass value [fr

  8. BOREAS TE-5 Soil Respiration Data

    Science.gov (United States)

    Hall, Forrest G. (Editor); Curd, Shelaine (Editor); Ehleriinger, Jim; Brooks, J. Renee; Flanagan, Larry

    2000-01-01

    The BOREAS TE-5 team collected measurements in the NSA and SSA on gas exchange, gas composition, and tree growth. Soil respiration data were collected from 26-May-94 to 07-Sep-94 in the BOREAS NSA and SSA to compare the soil respiration rates in different forest sites using a LI-COR 6200 soil respiration chamber (model 6299). The data are stored in tabular ASCII files. The data files are available on a CD-ROM (see document number 20010000884), or from the Oak Ridge National Laboratory (ORNL) Distrobuted Activity Archive Center (DAAC).

  9. Determination of equilibrium phase composition in the Hg-HgTe-CdTe system by ''dew point'' method

    International Nuclear Information System (INIS)

    Vanyukov, A.V.; Krotov, I.I.; Ermakov, A.I.

    1978-01-01

    Using the ''dew point'' method a study has been made of the equilibrium composition of the solid and liquid phases in the Hg-HgTe-CdTe system at 404, 435 and 454 deg C. It has been pointed out that crystallization of cadmium-rich solid solutions of Cdsub(x)Hgsub(1-x) Te takes place from a liquid phase with a much higher concentration of Hg. The activity of Hg in the liquid phase increases along the liquidus isotherm in the direction from section Hg-HgTe to section HgCdTe in accordance with the increase of its concentration. An increase in activity of Hg in the solid phase of Cdsub(x)Hgsub(1-x)Te has been noted with the reduction of its concentration

  10. Studies for Muon Colliders at Center-of-Mass Energies of 10 TeV and 100 TeV

    International Nuclear Information System (INIS)

    King, Bruce J.

    1999-01-01

    Parameter lists are presented for speculative muon colliders at center-of-mass energies of 10 TeV and 100 TeV. The technological advances required to achieve the given parameters are itemized and discussed, and a discussion is given of the design goals and constraints. An important constraint for multi-TeV muon colliders is the need to minimize neutrino radiation from the collider ring

  11. PharmTeX: a LaTeX-Based Open-Source Platform for Automated Reporting Workflow.

    Science.gov (United States)

    Rasmussen, Christian Hove; Smith, Mike K; Ito, Kaori; Sundararajan, Vijayakumar; Magnusson, Mats O; Niclas Jonsson, E; Fostvedt, Luke; Burger, Paula; McFadyen, Lynn; Tensfeldt, Thomas G; Nicholas, Timothy

    2018-03-16

    Every year, the pharmaceutical industry generates a large number of scientific reports related to drug research, development, and regulatory submissions. Many of these reports are created using text processing tools such as Microsoft Word. Given the large number of figures, tables, references, and other elements, this is often a tedious task involving hours of copying and pasting and substantial efforts in quality control (QC). In the present article, we present the LaTeX-based open-source reporting platform, PharmTeX, a community-based effort to make reporting simple, reproducible, and user-friendly. The PharmTeX creators put a substantial effort into simplifying the sometimes complex elements of LaTeX into user-friendly functions that rely on advanced LaTeX and Perl code running in the background. Using this setup makes LaTeX much more accessible for users with no prior LaTeX experience. A software collection was compiled for users not wanting to manually install the required software components. The PharmTeX templates allow for inclusion of tables directly from mathematical software output as well and figures from several formats. Code listings can be included directly from source. No previous experience and only a few hours of training are required to start writing reports using PharmTeX. PharmTeX significantly reduces the time required for creating a scientific report fully compliant with regulatory and industry expectations. QC is made much simpler, since there is a direct link between analysis output and report input. PharmTeX makes available to report authors the strengths of LaTeX document processing without the need for extensive training. Graphical Abstract ᅟ.

  12. Crystallization and memory programming characteristics of Ge-doped SbTe materials of varying Sb : Te ratio

    International Nuclear Information System (INIS)

    Jeong, Jeung-hyun; Lee, Hyun Seok; Lee, Suyoun; Lee, Taek Sung; Kim, Won Mok; Wu Zhe; Cheong, Byung-ki; Kim, Seul Cham; Oh, Kyu Hwan

    2009-01-01

    A phase change memory (PCM) utilizes resistivity changes accompanying fast transitions from an amorphous to a crystalline phase (SET) and vice versa (RESET). An investigation was made on the SET characteristics of PCM cells with Ge-doped SbTe (Ge-ST) materials of two different Sb : Te ratios (4.53 and 2.08). For the material of higher Sb : Te (4.53), a SET operation was completed within several tens of nanoseconds via nucleation-free crystallization whereas the material of lower Sb : Te (2.08) rendered a slower SET operation requiring several hundred nanoseconds for a nucleation-mediated crystallization. From measurements of nucleation and growth kinetics via laser-induced crystallization, the observed SET characteristics of the former case were found to derive from a growth time about 10 3 times shorter than the nucleation time and those of the latter from a much shorter nucleation time as well as a longer growth time than in the former case. The measured nucleation kinetics of the lower Sb : Te (2.08) material is unexpected from the existing data, which has led us to advance an interesting finding that there occurs a trend-reversing change in the nucleation kinetics of the Ge-ST materials around the eutectic composition (Sb : Te ∼2.6); nucleation is accelerated with the increase in the Sb : Te ratio above Sb : Te of 2.6, but with a decrease in the Sb : Te ratio below it.

  13. Noise in CdZnTe detectors

    International Nuclear Information System (INIS)

    Luke, P. N.; Amman, M.; Lee, J. S.; Manfredi, P. F.

    2000-01-01

    Noise in CdZnTe devices with different electrode configurations was investigated. Measurements on devices with guard-ring electrode structures showed that surface leakage current does not produce any significant noise. The parallel white noise component of the devices appeared to be generated by the bulk current alone, even though the surface current was substantially higher. This implies that reducing the surface leakage current of a CdZnTe detector may not necessarily result in a significant improvement in noise performance. The noise generated by the bulk current is also observed to be below full shot noise. This partial suppression of shot noise may be the result of Coulomb interaction between carriers or carrier trapping. Devices with coplanar strip electrodes were observed to produce a 1/f noise term at the preamplifier output. Higher levels of this 1/f noise were observed with decreasing gap widths between electrodes. The level of this 1/f noise appeared to be independent of bias voltage and leakage current but was substantially reduced after certain surface treatments

  14. Probing the TeV energy scale

    International Nuclear Information System (INIS)

    Anon.

    1993-01-01

    Despite its spectacular success, the Standard Model (SM) is widely believed to be incomplete. In fact there are good reasons to expect that new degrees of freedom, not present within the SM framework, will show up in particle collisions at TeV energies. Novel phenomena are, therefore, anticipated when this energy regime is explored at proton supercolliders such as the SSC or the LHC, and at the next generation of linear electron-positron colliders. Almost two hundred physicists, with roughly equal representation from North America, Europe and Asia, got together to discuss the physics possibilities of such colliders at the Second International Workshop on Physics and Experiments at Linear Electron-Positron Colliders, held during the last week of April in Waikoloa on the Big Island of Hawaii. It was the second in a series of international workshops which began in Saariselkä, Lapland, Finland in September 1991. The main theme of the workshop was the physics reach of, and the feasibility of experiments at, linear electron-positron colliders in the 300 GeV - 2 TeV collision energy region. Also discussed were the prospects for physics at electron-photon, photon-photon and electron-electron colliders

  15. Raman spectroscopy of glasses in the As–Te system

    International Nuclear Information System (INIS)

    Tverjanovich, A.; Rodionov, K.; Bychkov, E.

    2012-01-01

    For the first time, the Raman spectra of As x Te 1−x glasses, 0.2≤x≤0.6, have been measured over the entire glass-forming range. The spectra exhibit three broad spectral features attributed to vibrations of structural units having Te–Te, As–Te and As–As bonds. The observed chemical disorder in the glasses is discussed on the basis of partial bond fractions derived from the integrated intensity of the Raman modes. The underlying structural model suggests a dissociation of AsTe- or As 2 Te 3 -related units in the glass melt. The spectra of glasses quenched from different temperatures, as well as those of the annealed vitreous alloys, are consistent with predictions of the model. - Graphical abstract: Raman spectra of the As x Te 1−x glasses (0.2≤x≤0.4 and 0.4≤x≤0.6). Fractional concentrations of Te–Te, As–Te and As–As bonds in the As x Te 1−x glasses calculated using experimental Raman data. The solid lines represent predictions of the dissociation model assuming that the main chemically ordered structural units are related to AsTe. Highlights: ► For the first time, the Raman spectra of As x Te 1−x glasses, 0.2≤x≤0.6, were measured. ► The partial bond fractions were derived from the integrated intensity of the Raman modes. ► An empirical quantitative approach to the Raman data was proposed for the reaction modeling.

  16. Breast MRI at very short TE (minTE). Image analysis of minTE sequences on non-fat-saturated, subtracted T1-weighted images

    International Nuclear Information System (INIS)

    Wenkel, Evelyn; Janka, Rolf; Kaemmerer, Nadine; Uder, Michael; Hammon, Matthias; Brand, Michael; Hartmann, Arndt

    2017-01-01

    The aim was to evaluate a minimum echo time (minTE) protocol for breast magnetic resonance imaging (MRI) in patients with breast lesions compared to a standard TE (nTE) time protocol. Breasts of 144 women were examined with a 1.5 Tesla MRI scanner. Additionally to the standard gradient-echo sequence with nTE (4.8 ms), a variant with minimum TE (1.2 ms) was used in an interleaved fashion which leads to a better temporal resolution and should reduce the scan time by approximately 50%. Lesion sizes were measured and the signal-to-noise ratio (SNR) as well as the contrast-to-noise ratio (CNR) were calculated. Subjective confidence was evaluated using a 3-point scale before looking at the nTE sequences (1 = very sure that I can identify a lesion and classify it, 2 = quite sure that I can identify a lesion and classify it, 3 = definitely want to see nTE for final assessment) and the subjective image quality of all examinations was evaluated using a four-grade scale (1 = sharp, 2 = slight blur, 3 = moderate blur and 4 = severe blur/not evaluable) for lesion and skin sharpness. Lesion morphology and contrast enhancement were also evaluated. With minTE sequences, no lesion was rated with ''definitely want to see nTE sequences for final assessment''. The difference of the longitudinal and transverse diameter did not differ significantly (p>0.05). With minTE, lesions and skin were rated to be significantly more blurry (p<0.01 for lesions and p<0.05 for skin). There was no difference between both sequences with respect to SNR, CNR, lesion morphology, contrast enhancement and detection of multifocal disease. Dynamic breast MRI with a minTE protocol is feasible without a major loss of information (SNR, CNR, lesion morphology, contrast enhancement and lesion sizes) and the temporal resolution can be increased by a factor of 2 using minTE sequences.

  17. Breast MRI at very short TE (minTE). Image analysis of minTE sequences on non-fat-saturated, subtracted T1-weighted images

    Energy Technology Data Exchange (ETDEWEB)

    Wenkel, Evelyn; Janka, Rolf; Kaemmerer, Nadine; Uder, Michael; Hammon, Matthias; Brand, Michael [Univ. Hospital Erlangen (Germany). Dept. of Radiology; Geppert, Christian [Siemens Healthcare GmbH, Erlangen (Germany); Hartmann, Arndt [Univ. Hospital Erlangen (Germany). Dept. of Pathology

    2017-02-15

    The aim was to evaluate a minimum echo time (minTE) protocol for breast magnetic resonance imaging (MRI) in patients with breast lesions compared to a standard TE (nTE) time protocol. Breasts of 144 women were examined with a 1.5 Tesla MRI scanner. Additionally to the standard gradient-echo sequence with nTE (4.8 ms), a variant with minimum TE (1.2 ms) was used in an interleaved fashion which leads to a better temporal resolution and should reduce the scan time by approximately 50%. Lesion sizes were measured and the signal-to-noise ratio (SNR) as well as the contrast-to-noise ratio (CNR) were calculated. Subjective confidence was evaluated using a 3-point scale before looking at the nTE sequences (1 = very sure that I can identify a lesion and classify it, 2 = quite sure that I can identify a lesion and classify it, 3 = definitely want to see nTE for final assessment) and the subjective image quality of all examinations was evaluated using a four-grade scale (1 = sharp, 2 = slight blur, 3 = moderate blur and 4 = severe blur/not evaluable) for lesion and skin sharpness. Lesion morphology and contrast enhancement were also evaluated. With minTE sequences, no lesion was rated with ''definitely want to see nTE sequences for final assessment''. The difference of the longitudinal and transverse diameter did not differ significantly (p>0.05). With minTE, lesions and skin were rated to be significantly more blurry (p<0.01 for lesions and p<0.05 for skin). There was no difference between both sequences with respect to SNR, CNR, lesion morphology, contrast enhancement and detection of multifocal disease. Dynamic breast MRI with a minTE protocol is feasible without a major loss of information (SNR, CNR, lesion morphology, contrast enhancement and lesion sizes) and the temporal resolution can be increased by a factor of 2 using minTE sequences.

  18. A Direct TeX-to-Braille Transcribing Method

    Science.gov (United States)

    Papasalouros, Andreas; Tsolomitis, Antonis

    2017-01-01

    The TeX/LaTeX typesetting system is the most wide-spread system for creating documents in Mathematics and Science. However, no reliable tool exists to this day for automatically transcribing documents from the above formats into Braille/Nemeth code. Thus, visually impaired students of related fields do not have access to the bulk of study material…

  19. Characterization and photoluminescence studies of CdTe ...

    Indian Academy of Sciences (India)

    Administrator

    Abstract. The major objective of this work was to detect the change of photoluminescence (PL) intensity of. CdTe nanoparticles (NPs) before and after transfer from liquid phase to polystyrene (PS) matrix by electro- spinning technique. Thio-stabilized CdTe NPs were first synthesized in aqueous, then enwrapped by cetyl-.

  20. The mixing enthalpy of the Pb-Te system

    International Nuclear Information System (INIS)

    Blachnik, R.; Gather, B.

    1983-01-01

    The thermodynamic properties of molten Pb-Te alloys were measured at 1210 K in a Setaram-Calvet-type calorimeter. It was found that the enthalpy of mixing has a pronounced minimum of -26250 +- 950 J mol - 1 at 52 mol.%Te. The results obtained are discussed in terms of an ionic model. (Auth.)

  1. die geskiedenis van die saw gedenkteken te fort klapperkop militere ...

    African Journals Online (AJOL)

    As gevolg van enige optrede, op enige plek, te enige tyd, deur enige vyand van die RSA of deur enige terroris(te), insurgent(e) of ander persoon of persone wat die RSA en sy volkere kwaadgesind is. h. Binne twee jaar (vyfhondred-en-dertig dae) nadat hy/sy met 'n ongeskiktheids- pensioen uit diens getree het agv siekte,.

  2. Het optimale pluktijdstip is te voorspellen : rode bessen

    NARCIS (Netherlands)

    Westra, E.H.; Verschoor, J.A.

    2010-01-01

    Voor de lange bewaring van rode bessen moeten telers op het juiste moment plukken. Te vroeg oogsten geeft uitval door rot. Wageningen UR Food & Biobased Research (voorheen AFSG) ontwikkelde een voorspellingsmodel om het optimale pluktijdstip te kunnen bepalen op basis van de temperatuur in de

  3. Installing fonts in LaTeX a user's experience

    NARCIS (Netherlands)

    Hanssen, F.T.Y.

    2003-01-01

    This paper presents a user's experience with installing fonts for use in LaTeX. It will be shown that it is not hard to make a standard Type 1 font work, if you use modern font installation software for LaTeX. All the steps necessary to install the example fonts will be shown. The example fonts used

  4. Betrouwbaar toetsen op Afstand: Auteurschap. TeSLA docent workshop

    NARCIS (Netherlands)

    Brouns, Francis; Janssen, José

    2018-01-01

    In de workshop wordt ingegaan op technologie die ingezet kan worden om toetsen op afstand betrouwbaar af te nemen door instrumenten en technologie in te zetten voor vaststellen van identiteit van persoon en auteurschap van product. Uitgelegd wordt hoe dit in yOUlearn ingezet kan worden in het kader

  5. TeSLA presentatie voor medewerkers van AMN

    NARCIS (Netherlands)

    Janssen, José

    2017-01-01

    Presentatie over Online toetsen voor medewerkers van AMN (www.amn.nl). Topics: assessment onderzoek Welten-instituut en meer in het bijzonder het TeSLA project waarin instrumenten voor authenticatie en auteurschap verificatie worden gecombineerd om betrouwbaar toetsen op afstand mogelijk te maken.

  6. TeSLA pilot 2 pedagogical & quality aspects

    OpenAIRE

    Janssen, José

    2018-01-01

    Presentation given at the TeSLA project meeting at the Open University of the Netherlands, addressing pedagogical aspects of pilot 2 and clarification of the scope and limitations of the TeSLA instruments with respect to pedagogy, assessment activity and type of academic dishonesty.

  7. High thermoelectric potential of Bi{sub 2}Te{sub 3} alloyed GeTe-rich phases

    Energy Technology Data Exchange (ETDEWEB)

    Madar, Naor; Givon, Tom; Mogilyansky, Dmitry; Gelbstein, Yaniv [Department of Materials Engineering, Ben-Gurion University of the Negev, Beer-Sheva (Israel)

    2016-07-21

    In an attempt to reduce our reliance on fossil fuels, associated with severe environmental effects, the current research is focused on the identification of the thermoelectric potential of p-type (GeTe){sub 1−x}(Bi{sub 2}Te{sub 3}){sub x} alloys, with x values of up to 20%. Higher solubility limit of Bi{sub 2}Te{sub 3} in GeTe, than previously reported, was identified around ∼9%, extending the doping potential of GeTe by the Bi{sub 2}Te{sub 3} donor dopant, for an effective compensation of the high inherent hole concentration of GeTe toward thermoelectrically optimal values. Around the solubility limit of 9%, an electronic optimization resulted in an impressive maximal thermoelectric figure of merit, ZT, of ∼1.55 at ∼410 °C, which is one of the highest ever reported for any p-type GeTe-rich alloys. Beyond the solubility limit, a Fermi Level Pinning effect of stabilizing the Seebeck coefficient was observed in the x = 12%–17% range, leading to stabilization of the maximal ZTs over an extended temperature range; an effect that was associated with the potential of the governed highly symmetric Ge{sub 8}Bi{sub 2}Te{sub 11} and Ge{sub 4}Bi{sub 2}Te{sub 7} phases to create high valence band degeneracy with several bands and multiple hole pockets on the Fermi surface. At this compositional range, co-doping with additional dopants, creating shallow impurity levels (in contrast to the deep lying level created by Bi{sub 2}Te{sub 3}), was suggested for further electronic optimization of the thermoelectric properties.

  8. Diffusion and influence of Cu on properties of CdTe thin films and CdTe/CdS cells

    Energy Technology Data Exchange (ETDEWEB)

    Dzhafarov, T.D.; Yesilkaya, S.S.; Yilmaz Canli, N.; Caliskan, M. [Department of Physics, Yildiz Technical University, Davutpasa, 34210 Istanbul (Turkey)

    2005-01-31

    The effective diffusion coefficients of Cu for thermal and photodiffusion in the CdTe films have been estimated from resistivity versus duration of thermal or photoannealing curves. In the temperature range 60-200{sup o}C the effective coefficient of thermal diffusion (D{sub t}) and photodiffusion (D{sub ph}) are described as D{sub t}=7.3x10{sup -7}exp(-0.33/kT) and D{sub ph}=4.7x10{sup -8}exp(-0.20/kT). It is found that the diffusion doping of CdTe thin films by Cu at 400{sup o}C results in a sharp decrease of resistivity up to 7 orders of magnitude of p-type material, depending on thickness of Cu film. The comparative study of performance of CdTe(Cu)/CdS and CdTe/CdS cells has been studied. It is shown that the diffusion doping of CdTe film by Cu increases efficiency of CdTe(Cu)/CdS cells from 0.9% to 6.8%. The degradation of photovoltaic parameters of CdTe(Cu)/CdS cell, during testing under forward and reverse bias at room temperature, proceeds at a larger rate than those of CdTe/CdS cell without Cu. The degradation of performance of CdTe(Cu)/CdS cells is tentatively assigned to electrodiffusion of Cu in CdTe, resulting in redistribution of concentration of Cu-related centers in CdTe film and heterojunction region.

  9. Forenzika elektronske pošte

    Directory of Open Access Journals (Sweden)

    Milorad S. Markagić

    2013-10-01

    Full Text Available U najopštijem smislu digitalna forenzika može se definisati kao skup metoda za prikupljanje, analizu i prezentaciju digitalnih dokaza koji se mogu pronaći na računarima, serverima, u računarskim mrežama, bazama podataka, mobilnim uređajima i svim drugim elektronskim uređajima na kojima se čuvaju podaci. U ovom radu su opisane metode prikupljanja digitalnih dokaza u elektronskoj pošti i njihova analiza. Uvod Elektronska pošta se kao dokazni materijal pojavljuje u velikom broju kako građanskih tako i kriminalnih forenzičkih istraga. Elektronska pošta i elektronska pošta zasnovana na internet serverima  širi se veoma brzo, pa lako i brzo završi i na računaru korisnika kome nije namenjena. Prvu elektronsku poruku poslao je Ray Tomilson 1971. godine, a deset godina kasnije u kombinaciji sa personalnim računarima i internetom prerasta u globalni način komuniciranja i personalnog i poslovnog. Takođe se koristi i u svrhu zabave, načina razmene podataka, ali predstavlja i nezamenjiv izvor digitalnih dokaza, kada dodje do računarskog incidenta. Analiza elektronske pošte Svaka elektronska poruka sastoji se od dva dela: zaglavlja i teksta poruke. Iz zaglavlja je moguće saznati izvorišnu i odredišnu adresu, pošiljaoca i namenjenog primaoca, a telo poruke sadrži tekst poruke. Ekstenzije dokumenata elektronske pošte U slučajevima kada je potrebno otkriti samo dokumente potrebne za pregled elektronskih poruka, ili kopirati pojedinačni dokument sačuvan unutar elektronske pošte, moguće je koristiti sistem na istraživanom računaru ili specijalizovani softver kao što je Outlook Extract Pro ili Outlook Export. Mnogo ispravniji, sigurniji i jednostavniji način je korišćenje forenzičkih alata kao što su EnCase ili FTK, sa ugrađenim pregledačima koji omogućavaju pregled i snimanje sadržaja baze podataka kao i njihovo kopiranje na druge medije za dalju analizu. Forenzički alati automatizuju proces skidanja i kopiranja

  10. The excess enthalpies of liquid Ge-Pb-Te alloys

    International Nuclear Information System (INIS)

    Blachnik, R.; Binder, J.; Schlieper, A.

    1997-01-01

    The excess enthalpies of liquid alloys in the ternary system Ge-Pb-Te were determined at 1210 K in a heat flow calorimeter for five sections Ge y Pb 1-y -Te with y = 0.2, 0.4, 0.5, 0.6 and 0.8 and at 1153 K for Ge 0.5 Pb 0.5 -Te. The enthalpy surface in the ternary system is determined by a valley of exothermic minima, stretching from an exothermic minimum at the composition GeTe to one at the composition PbTe in the respective binaries. The excess enthalpies in the limiting metallic binary were adapted with the Redlich-Kister formalism. For the description of the thermodynamic functions in the ternary system the equation of Bonnier was taken using ternary coefficients. The calculated curves are in good agreement with the experimental data. (orig.)

  11. Slow Auger Relaxation in HgTe Colloidal Quantum Dots.

    Science.gov (United States)

    Melnychuk, Christopher; Guyot-Sionnest, Philippe

    2018-05-03

    The biexciton lifetimes in HgTe colloidal quantum dots are measured as a function of particle size. Samples produced by two synthetic methods, leading to partially aggregated or well-dispersed particles, exhibit markedly different dynamics. The relaxation characteristics of partially aggregated HgTe inhibit reliable determinations of the Auger lifetime. In well-dispersed HgTe quantum dots, the biexciton lifetime increases approximately linearly with particle volume, confirming trends observed in other systems. The extracted Auger coefficient is three orders of magnitude smaller than that for bulk HgCdTe materials with similar energy gaps. We discuss these findings in the context of understanding Auger relaxation in quantum-confined systems and their relevance to mid-infrared optoelectronic devices based on HgTe colloidal quantum dots.

  12. Crystal growth and characterization of Ir-Te compounds

    Energy Technology Data Exchange (ETDEWEB)

    Kurzhals, Philipp; Weber, Frank; Zocco, Diego; Adelmann, Peter; Merz, Michael; Wolf, Thomas; Kuntz, Sebastian; Grube, Kai [Karlsruhe Institute of Technology, Institute for Solid State Physics, Karlsruhe (Germany)

    2016-07-01

    IrTe{sub 2} is distinguished by a structural phase transition whose origin is not understood up to the present day. We grew crystals using the self-flux method starting from the reagents iridium and tellurium and got specimen with varying amounts of IrTe{sub 2} and Ir{sub 3}Te{sub 8}, analyzed by x-ray powder diffraction. We studied the transition near T = 280 K in magnetization measurements down to T = 1.8 K probing also for superconductivity, which was reported for intercalated samples. Results indicate that the structural transition happens over an extended range in temperature and superconductivity is absent in our samples. Ir{sub 3}Te{sub 8} is not studied to such an extent as IrTe{sub 2}. In previous publications a structural phase transition is reported. We characterized the transition by performing magnetization measurements and X-ray diffraction.

  13. Phase transformation in Mg—Sb3Te thin films

    International Nuclear Information System (INIS)

    Li Jun-Jian; Chen Yi-Min; Nie Qiu-Hua; Lü Ye-Gang; Wang Guo-Xiang; Shen Xiang; Dai Shi-Xun; Xu Tie-Feng

    2014-01-01

    Mg-doped Sb 3 Te films are proposed to improve the performance of phase-change memory (PCM). We prepare Mg-doped Sb 3 Te films and investigate their crystallization behaviors, structural, optical and electrical properties. We find that Mg-doping can increase the crystallization temperature, enhance the activation energy, and improve the 10-year data retention of Sb 3 Te. Especially Mg 25.19 (Sb 3 Te)74.81 shows higher T c (∼ 190 °C) and larger E a (∼ 3.49 eV), which results in a better data retention maintaining for 10 yr at ∼ 112 °C. Moreover R a /R c value is also improved. These excellent properties make Mg—Sb—Te material a promising candidate for the phase-change memory (PCM). (special topic — international conference on nanoscience and technology, china 2013)

  14. Rashba split surface states in BiTeBr

    International Nuclear Information System (INIS)

    Eremeev, S V; Rusinov, I P; Nechaev, I A; Chulkov, E V

    2013-01-01

    Within density functional theory, we study the bulk band structure and surface states of BiTeBr. We consider both ordered and disordered phases, which differ in atomic order in the Te–Br sublattice. On the basis of relativistic ab initio calculations, we show that the ordered BiTeBr is energetically preferable as compared with the disordered one. We demonstrate that both Te- and Br-terminated surfaces of the ordered BiTeBr hold surface states with a giant spin–orbit splitting. The Te-terminated surface-state spin splitting has Rashba-type behavior with the coupling parameter α R ∼ 2 eVÅ. (paper)

  15. On the cesium-rich part of the Cs-Te phase diagram

    International Nuclear Information System (INIS)

    Boer, R. de; Cordfunke, E.H.P.

    1995-03-01

    The cesium-tellurium system in the region between 33 and 55 at.% Te has been investigated with X-ray diffraction and DSC. The existence of the compounds Cs 5 Te 3 and CsTe is demonstrated. The latter compound exhibits a structural transition at elevated temperature, as does the compound Cs 2 Te. The earlier reported compounds Cs 3 Te 2 and Cs 5 Te 4 do not exist. (orig.)

  16. Development of CdTe/Cd1-xMgxTe double barrier, single quantum well heterostructure for resonant tunneling

    International Nuclear Information System (INIS)

    Reuscher, G.; Keim, M.; Fischer, F.; Waag, A.; Landwehr, G.

    1995-01-01

    We report the first observation of resonant tunneling through a CdTe/Cd 1-x Mg x Te double barrier, single quantum well heterostructure. Negative differential resistance is observable at temperatures below 230 K, exhibiting a peak to valley ratio of 3:1 at 4.2 K. (author)

  17. First-principles study of lattice thermal conductivity in ZrTe5 and HfTe5

    Science.gov (United States)

    Wang, Cong; Wang, Haifeng; Chen, Y. B.; Yao, Shu-Hua; Zhou, Jian

    2018-05-01

    Recently, the layered transition-metal pentatellurides ZrTe5 and HfTe5 have attracted increasing attention because of their interesting topological electronic properties. Nevertheless, some of their other good physical properties seem to be ignored now. Actually, both ZrTe5 and HfTe5 have high electric conductivities (>105 Ω-1 m-1) and Seebeck coefficients (> 100 μV/K) at room temperature, thus making them promising thermoelectric materials. However, the disadvantage is that the thermal conductivities of the two materials are relatively high according to the few available experiments; meanwhile, the detailed mechanism of the intrinsic thermal conductivity has not been studied yet. Based on the density functional theory and the Boltzmann transport theory, we present here the theoretical study of the intrinsic lattice thermal conductivities of ZrTe5 and HfTe5, which are found to be in the range of 5-8 W/mṡK at room temperature and well consistent with the experimental results. We also find that the thermal conductivities of the two materials are anisotropic, which are mainly caused by their anisotropic crystal structures. Based on the detailed analysis, we proposed that the thermal conductivities of the two materials could possibly be reduced by different kinds of structural engineering at the atomic and mesoscopic scales, such as alloying, doping, nano-structuring, and polycrystalline structuring, which could make ZrTe5 and HfTe5 good thermoelectric materials for room temperature thermoelectric applications.

  18. Performance optimization of CdTe and CdZnTe detectors for γ-spectrometry

    International Nuclear Information System (INIS)

    Montemont, Guillaume

    2000-01-01

    This study deals with room-temperature gamma spectrometry with CdTe and CdZnTe semiconductor detectors. The aim was the improvement of energy resolution and detection efficiency. Some different phenomena have been investigated. Electronic noise knowledge has enabled us to optimize the design of filtering. Charge transport induces signal shape uncertainty and the processing circuit has been adapted in order to account for these variations. Study and simulation of electrical current induction process has permitted the development of a new Frisch-grid based detection structure. We have reached 3% energy resolutions at 122 keV without detection efficiency loss. Finally, the remaining limits of detector performances have been estimated by focusing on gamma interaction phenomena and material non-uniformity problems. (author) [fr

  19. Magnetospectroscopy of double HgTe/CdHgTe quantum wells

    Energy Technology Data Exchange (ETDEWEB)

    Bovkun, L. S.; Krishtopenko, S. S.; Ikonnikov, A. V., E-mail: antikon@ipmras.ru; Aleshkin, V. Ya.; Kadykov, A. M. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation); Ruffenach, S.; Consejo, C.; Teppe, F.; Knap, W. [Laboratoire Charles Coulomb (L2C), UMR CNRS 5221 and UM (France); Orlita, M.; Piot, B.; Potemski, M. [Laboratoire National des Champs Magnetiques Intenses (LNCMI-G), CNRS-UJF-UPS-INSA (France); Mikhailov, N. N.; Dvoretskii, S. A. [Russian Academy of Sciences, Siberian Branch, Rzhanov Institute of Semiconductor Physics (Russian Federation); Gavrilenko, V. I. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation)

    2016-11-15

    The magnetoabsorption spectra in double HgTe/CdHgTe quantum wells (QWs) with normal and inverted band structures are investigated. The Landau levels in symmetric QWs with a rectangular potential profile are calculated based on the Kane 8 × 8 model. The presence of a tunnel-transparent barrier is shown to lead to the splitting of states and “doubling” of the main magnetoabsorption lines. At a QW width close to the critical one the presence of band inversion and the emergence of a gapless band structure, similar to bilayer graphene, are shown for a structure with a single QW. The shift of magnetoabsorption lines as the carrier concentration changes due to the persistent photoconductivity effect associated with a change in the potential profile because of trap charge exchange is detected. This opens up the possibility for controlling topological phase transitions in such structures.

  20. BOREAS TE-9 NSA Canopy Biochemistry

    Science.gov (United States)

    Hall, Forrest G. (Editor); Curd, Shelaine (Editor); Margolis, Hank; Charest, Martin; Sy, Mikailou

    2000-01-01

    The BOREAS TE-9 team collected several data sets related to chemical and photosynthetic properties of leaves. This data set contains canopy biochemistry data collected in 1994 in the NSA at the YJP, OJR, OBS, UBS, and OA sites, including biochemistry lignin, nitrogen, cellulose, starch, and fiber concentrations. These data were collected to study the spatial and temporal changes in the canopy biochemistry of boreal forest cover types and how a high-resolution radiative transfer model in the mid-infrared could be applied in an effort to obtain better estimates of canopy biochemical properties using remote sensing. The data are available in tabular ASCII files. The data files are available on a CD-ROM (see document number 20010000884), or from the Oak Ridge National Laboratory (ORNL) Distributed Active Archive Center (DAAC).

  1. Leptogenesis with TeV Scale WR

    Science.gov (United States)

    Gu, Pei-Hong; Mohapatra, Rabindra N.

    2018-04-01

    Successful leptogenesis within the conventional TeV-scale left-right implementation of type-I seesaw has been shown to require that the mass of the right-handed WR± boson should have a lower bound much above the reach of the Large Hadron Collider. This bound arises from the necessity to suppress the washout of lepton asymmetry due to WR±-mediated Δ L ≠0 processes. We show that in an alternative quark seesaw realization of left-right symmetry, the above bound can be avoided. Lepton asymmetry in this model is generated not via the usual right-handed neutrino decay but rather via the decay of new heavy scalars producing an asymmetry in the B -L carrying Higgs triplets responsible for type-II seesaw, whose decay leads to the lepton asymmetry.

  2. BOREAS TE-9 NSA Photosynthetic Response Data

    Science.gov (United States)

    Hall, Forrest G.; Curd, Shelaine (Editor); Dang, Qinglai; Margolis, Hank; Coyea, Marie

    2000-01-01

    The Boreal Ecosystem-Atmospheric Study (BOREAS) TE-9 (Terrestrial Ecology) team collected several data sets related to chemical and photosynthetic properties of leaves. This data set describes: (1) the response of leaf and shoot-level photosynthesis to ambient and intercellular CO2 concentration, temperature, and incident photosynthetically active radiation (PAR) for black spruce, jack pine, and aspen during the three intensive field campaigns (IFCs) in 1994 in the Northern Study Area (NSA); (2) the response of stomatal conductance to vapor pressure difference throughout the growing season of 1994; and (3) a range of shoot water potentials (controlled in the laboratory) for black spruce and jack pine. The data are stored in tabular ASCII files. The data files are available on a CD-ROM (see document number 20010000884), or from the Oak Ridge National Laboratory (ORNL) Distributed Active Archive Center (DAAC).

  3. Electronic structure of Fe1.08Te bulk crystals and epitaxial FeTe thin films on Bi2Te3

    Science.gov (United States)

    Arnold, Fabian; Warmuth, Jonas; Michiardi, Matteo; Fikáček, Jan; Bianchi, Marco; Hu, Jin; Mao, Zhiqiang; Miwa, Jill; Singh, Udai Raj; Bremholm, Martin; Wiesendanger, Roland; Honolka, Jan; Wehling, Tim; Wiebe, Jens; Hofmann, Philip

    2018-02-01

    The electronic structure of thin films of FeTe grown on Bi2Te3 is investigated using angle-resolved photoemission spectroscopy, scanning tunneling microscopy and first principles calculations. As a comparison, data from cleaved bulk Fe1.08Te taken under the same experimental conditions is also presented. Due to the substrate and thin film symmetry, FeTe thin films grow on Bi2Te3 in three domains, rotated by 0°, 120°, and 240°. This results in a superposition of photoemission intensity from the domains, complicating the analysis. However, by combining bulk and thin film data, it is possible to partly disentangle the contributions from three domains. We find a close similarity between thin film and bulk electronic structure and an overall good agreement with first principles calculations, assuming a p-doping shift of 65 meV for the bulk and a renormalization factor of around two. By tracking the change of substrate electronic structure upon film growth, we find indications of an electron transfer from the FeTe film to the substrate. No significant change of the film’s electronic structure or doping is observed when alkali atoms are dosed onto the surface. This is ascribed to the film’s high density of states at the Fermi energy. This behavior is also supported by the ab initio calculations.

  4. Determination of K shell fluorescence cross-section and Kβ/Kα intensity ratios for Fe, Se, Te, FeSe, FeTe and TeSe

    International Nuclear Information System (INIS)

    Saydam, M.; Aksoy, C.; Cengiz, E.; Alaşalvar, C.; Tıraşoğlu, E.; Apaydın, G.

    2012-01-01

    The fluorescence cross-sections (σ Ki ) and the intensity ratios K β /K α for pure Fe, Se, Te elements and FeSe, FeTe, TeSe complexes have been investigated. The samples were excited by 59.5 keV γ-rays from 241 Am annular radioactive source and emitted X-rays. They were counted by an Ultra-LEGe detector with resolution of 150 eV at 5.9 keV. For pure elements results have been compared with the theoretical calculated values. According to our results band length and mutual interaction of atoms affected the results. We claimed that these effects would help researchers who study on superconductors, especially determining which compound can be show the superconductor properties. - Highlights: ► TeSe, FeSe and FeTe complexes have affected each other in terms of charge transfer. ► Fe excitement and enhancement have been made by Se and Te. ► Attractive interactions between electrons can help to becoming superconductivity.

  5. Electric transport properties of the pentatelluride materials HfTe{sub 5} and ZrTe{sub 5}

    Energy Technology Data Exchange (ETDEWEB)

    Tritt, T M; Wilson, M L; Littleton, R L [and others

    1997-07-01

    The authors have measured the resistivity and thermopower of single crystals as well as polycrystalline pressed powders of the low-dimensional pentatelluride materials: HfTe{sub 5} and ZrTe{sub 5}. They have performed these measurements as a function of temperature between 5K and 320K. In the single crystals there is a peak in the resistivity for both materials at a peak temperature, T{sub p} where T{sub p} {approx} 80K for HfTe{sub 5} and T{sub p} {approx} 145K for ZrTe{sub 5}. Both materials exhibit a large p-type thermopower around room temperature which undergoes a change to n-type below the peak. These data are similar to behavior observed previously in these materials. They have also synthesized pressed powders of polycrystalline pentatelluride materials, HfTe{sub 5} and ZrTe{sub 5}. They have measured the resistivity and thermopower of these polycrystalline materials as a function of temperature between 5K and 320K. For the polycrystalline material, the room temperature thermopower for each of these materials is relatively high, +95 {micro}V/K and +65 {micro}V/K for HfTe{sub 5} and ZrTe{sub 5}, respectively. These values compare closely to thermopower values for single crystals of these materials. At 77 K, the thermopower is +55 {micro}V/K for HfTe{sub 5} and +35 {micro}V/K for ZrTe{sub 5}. In fact, the thermopower for the polycrystals decreases monotonically with temperature to T {approx} 5K, thus exhibiting p-type behavior over the entire range of temperature. As expected, the resistivity for the polycrystals is higher than the single crystal material, with values of 430 m{Omega}-cm and 24 m{Omega}-cm for HfTe{sub 5} and ZrTe{sub 5} respectively, compared to single crystal values of 0.35 m{Omega}-cm (HfTe{sub 5}) and 1.0 m{Omega}-cm (ZrTe{sub 5}). The authors have found that the peak in the resistivity evident in both single crystal materials is absent in these polycrystalline materials. They will discuss these materials in relation to their potential as

  6. Thermoelectric properties of Bi2Te3 base solid solutions in the Bi2Te3-InS system

    International Nuclear Information System (INIS)

    Safarov, M.G.; Rustamov, P.G.; Alidzhanov, M.A.

    1979-01-01

    The rich Bi 2 Te 3 part ot the Bi 2 Te 3 -InS constitutional diagram has been studied with a view to produce new Bi 2 Te 3 -based solid solutions and to establish the maximum solubility of InS in Bi 2 Te 3 . The methods of differential-thermal, X-ray phase and microstructural analysis have been used. The alloys microhardness, density and thermal electric properties have been measured. A large region of Bi 2 Te 3 -based restricted solid solutions has been detected; it reaches 14.0 mol.% InS at room temperature. Studied have been the thermoelectromotive forces, electric and thermal conductivity of the alloys, containing up to 5 mol.% InS in the 300-700 K temperature range

  7. Study of CdTe and HgCdTe thin films obtained by electrochemical methods

    International Nuclear Information System (INIS)

    Guillen, C.

    1990-01-01

    Cadmium telluride polycrystalline thin films were fabricated on SnO 2 -coated glass substrates by potentiostatic electrodeposition and characterized by X-ray diffraction, energy dispersive X-ray analyses (EDAX), optical and electrical measurements. The films dseposited at potentials more positive than -0.65 V vs.SCE were p-type but those deposited at more negative potentials were n-type. All CdTe thin films showed a band-gap energy about 1.45 eV and a large absorption coeffici-ent (a=10 5 cm -1 ) above de band edge. The addition of even small amounts of mercury to the CdTe produces higuer conductivity values and lower band-gap energies. We have prepared HgCdTe thin films where the band-gap energies ranged between 0.93 and 0.88 eV depending on the ratio of mercury to cadmium. Heat treatment at 300 0 C increases the crystalline diameter and alter the composition of the electrodeposited films, a decrease of the resistivity values was also observed. (Author)

  8. Growth of CdTe: Al films; Crecimiento de peliculas de CdTe: Al

    Energy Technology Data Exchange (ETDEWEB)

    Gonzalez A, M.; Zapata T, M. [CICATA-IPN, 89600 Altamira, Tamaulipas (Mexico); Melendez L, M. [CINVESTAV-IPN, A.P. 14-740, 07000 Mexico D.F. (Mexico); Pena, J.L. [CINVESTAV-IPN, A.P. 73 Cordemex, 97310 Merida, Yucatan (Mexico)

    2006-07-01

    CdTe: AI films were grown by the close space vapor transport technique combined with free evaporation (CSVT-FE). The Aluminum (Al) evaporation was made by two kinds of sources: one made of graphite and the other of tantalum. The films were deposited on glass substrates. The Al source temperature was varied maintaining the CdTe source temperature fixed as well as the substrate temperature. The films were characterized by x-ray energy dispersive analysis (EDAX), x-ray diffraction and optical transmission. The results showed for the films grown with the graphite source for Al evaporation, the Al did not incorporate in the CdTe matrix, at least to the level of EDAX sensitivity; they maintained the same crystal structure and band gap. For the samples grown with the tantalum source, we were able to incorporate the Al. The x-ray diffraction patterns show that the films have a crystal structure that depends on Al concentration. They were cubic up to 2.16 at. % Al concentration; for 19.65 at. % we found a mixed phase; for Al concentration higher than 21 at. % the films were amorphous. For samples with cubic structure it was found that the lattice parameter decreases and the band gap increases with Al concentration. (Author)

  9. Zn2(TeO3)Br2

    Science.gov (United States)

    Zhang, Dong; Johnsson, Mats

    2008-01-01

    Single crystals of dizinc tellurium dibromide trioxide, Zn2(TeO3)Br2, were synthesized via a transport reaction in sealed evacuated silica tubes. The compound has a layered crystal structure in which the building units are [ZnO4Br] distorted square pyramids, [ZnO2Br2] distorted tetra­hedra, and [TeO3 E] tetra­hedra (E being the 5s 2 lone pair of Te4+) joined through sharing of edges and corners to form layers of no net charge. Bromine atoms and tellurium lone pairs protrude from the surfaces of each layer towards adjacent layers. This new compound Zn2(TeO3)Br2 is isostructural with the synthetic compounds Zn2(TeO3)Cl2, CuZn(TeO3)2, Co2(TeO3)Br2 and the mineral sophiite, Zn2(SeO3)Cl2. PMID:21202162

  10. Radiative and interfacial recombination in CdTe heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Swartz, C. H., E-mail: craig.swartz@txstate.edu; Edirisooriya, M.; LeBlanc, E. G.; Noriega, O. C.; Jayathilaka, P. A. R. D.; Ogedengbe, O. S.; Hancock, B. L.; Holtz, M.; Myers, T. H. [Materials Science, Engineering, and Commercialization Program, Texas State University, 601 University Dr., San Marcos, Texas 78666 (United States); Zaunbrecher, K. N. [National Renewable Energy Laboratory, 15013 Denver West Parkway, Mississippi RSF200, Golden, Colorado 80401 (United States)

    2014-12-01

    Double heterostructures (DH) were produced consisting of a CdTe film between two wide band gap barriers of CdMgTe alloy. A combined method was developed to quantify radiative and non-radiative recombination rates by examining the dependence of photoluminescence (PL) on both excitation intensity and time. The measured PL characteristics, and the interface state density extracted by modeling, indicate that the radiative efficiency of CdMgTe/CdTe DHs is comparable to that of AlGaAs/GaAs DHs, with interface state densities in the low 10{sup 10 }cm{sup −2} and carrier lifetimes as long as 240 ns. The radiative recombination coefficient of CdTe is found to be near 10{sup −10} cm{sup 3}s{sup −1}. CdTe film growth on bulk CdTe substrates resulted in a homoepitaxial interface layer with a high non-radiative recombination rate.

  11. CdTe Photovoltaics for Sustainable Electricity Generation

    Science.gov (United States)

    Munshi, Amit; Sampath, Walajabad

    2016-09-01

    Thin film CdTe (cadmium telluride) is an important technology in the development of sustainable and affordable electricity generation. More than 10 GW of installations have been carried out using this technology around the globe. It has been demonstrated as a sustainable, green, renewable, affordable and abundant source of electricity. An advanced sublimation tool has been developed that allows highly controlled deposition of CdTe films onto commercial soda lime glass substrates. All deposition and treatment steps can be performed without breaking the vacuum within a single chamber in an inline process that can be conveniently scaled to a commercial process. In addition, an advanced cosublimation source has been developed to allow the deposition of ternary alloys such as Cd x Mg1- x Te to form an electron reflector layer which is expected to address the voltage deficits in current CdTe devices and to achieve very high efficiency. Extensive materials characterization, including but not limited to scanning electron microscopy, transmission electron microscopy, energy dispersive x-ray spectroscopy, high resolution transmission electron microscopy and electron back-scatter diffraction, has been performed to get a better understanding of the effects of processing conditions on CdTe thin film photovoltaics. This combined with computer modeling such as density function theory modeling gives a new insight into the mechanism of CdTe photovoltaic function. With all these efforts, CdTe photovoltaics has seen great progress in the last few years. Currently, it has been recorded as the cheapest source of electricity in the USA on a commercial scale, and further improvements are predicted to further reduce the cost while increasing its utilization. Here, we give an overview of the advantages of thin film CdTe photovoltaics as well as a brief review of the challenges that need to be addressed. Some fundamental studies of processing conditions for thin film CdTe are also presented

  12. Photostimulated changes of properties of CdTe films

    Energy Technology Data Exchange (ETDEWEB)

    Dzhafarov, T.D. [Institute of Physics, Azerbaijan National Academy of Sciences, AZ-1143 Baku (Azerbaijan); Yesilkaya, S.S. [Department of Physics, Yildiz Technical University, 34210 Esenler/Istanbul (Turkey)

    2007-08-15

    The effect of illumination during the close-spaced sublimation (CSS) growth on composition, structural, electrical, optical and photovoltaic properties of CdTe films and CdTe/CdS solar cells were investigated. Data on comparative study by using X-ray diffraction (XRD), scanning electron microscopy (SEM), absorption spectra and conductivity-temperature measurements of CdTe films prepared by CSS method in dark (CSSD) and under illumination (CSSI) were presented. It is shown that the growth rate and the grain size of CdTe films grown under illumination is higher (by factor about of 1.5 and 3 respectively) than those for films prepared without illumination. The energy band gap of CdTe films fabricated by both technology, determined from absorption spectra, is same (about of 1.50 eV), however conductivity of the CdTe films produced by CSSI is considerably greater (by factor of 10{sup 7}) than that of films prepared by CSSD. The photovoltaic parameters of pCdTe/nCdS solar cells fabricated by photostimulated CSSI technology (J{sub sc}=28 mA/cm{sup 2}, V{sub oc}=0.63 V) are considerably larger than those for cells prepared by CSSD method (J{sub sc}=22 mA/cm{sup 2}, V{sub oc}=0.52 V). A mechanism of photostimulated changes of properties of CdTe films and improvement of photovoltaic parameters of CdTe/CdS solar cells is suggested. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  13. Improved structural and electrical properties in native Sb2Te3/GexSb2Te3+x van der Waals superlattices due to intermixing mitigation

    Directory of Open Access Journals (Sweden)

    Stefano Cecchi

    2017-02-01

    Full Text Available Superlattices made of Sb2Te3/GeTe phase change materials have demonstrated outstanding performance with respect to GeSbTe alloys in memory applications. Recently, epitaxial Sb2Te3/GeTe superlattices were found to feature GexSb2Te3+x blocks as a result of intermixing between constituting layers. Here we present the epitaxy and characterization of Sb2Te3/GexSb2Te3+x van der Waals superlattices, where GexSb2Te3+x was intentionally fabricated. X-ray diffraction, Raman spectroscopy, scanning transmission electron microscopy, and lateral electrical transport data are reported. The intrinsic 2D nature of both sublayers is found to mitigate the intermixing in the structures, significantly improving the interface sharpness and ultimately the superlattice structural and electrical properties.

  14. Study on the local stress induced dislocations on (1 bar 1 bar 1 bar) Te face of CdTe-based crystals

    Science.gov (United States)

    Fu, Xu; Xu, Yadong; Xu, Lingyan; Gu, Yaxu; Jia, Ningbo; Jie, Wanqi

    2017-11-01

    The rosette-like dislocation clusters around Te inclusions in as-grown CdZnTe/CdTe crystals and those introduced by the micro-indentation on CdZnTe/CdTe surface are studied experimentally. The extended dislocation patterns are formed around Te inclusions in both CdZnTe and CdTe crystals, owing to the build-in stress. Two mutually orthogonal tetrahedrons are observed in CdZnTe crystal. However, the ;double-arms; dislocation rosette pattern extended along 〈1 1 0〉 direction is observed in CdTe crystal. The Peierls kink pair mechanism and the Hirsch effects are used to explain the discrepancy of these two different rosette patterns. Similar dislocation rosette patterns are observed on indentation surface of CdZnTe crystal. The dislocation rosette patterns are found to be independent of the indenter orientation, but completely determined by the crystallographic properties of zinc-blende structure of the crystal. Furthermore, the Te(g) and Cd(g) dislocation arms are found to be mixed and bended with each other in CdTe crystal under high indentation stress, making it different from that generated around Te inclusions. A model concerning the comprehensive impact of stress field and electronic polarities dislocations is proposed to clarify the dislocation bending phenomenon.

  15. Spin dynamics in bulk CdTe at room temperature

    International Nuclear Information System (INIS)

    Nahalkova, P.; Nemec, P.; Sprinzl, D.; Belas, E.; Horodysky, P.; Franc, J.; Hlidek, P.; Maly, P.

    2006-01-01

    In this paper, we report on the room temperature dynamics of spin-polarized carriers in undoped bulk CdTe. Platelets of CdTe with different concentration of preparation-induced dislocations were prepared by combining the mechanical polishing and chemical etching. Using the polarization-resolved pump-probe experiment in transmission geometry, we have observed a systematic decrease of both the signal polarization and the electron spin dephasing time (from 52 to 36 ps) with the increased concentration of defects. We have suggested that the Elliot-Yafet mechanism might be the dominant spin dephasing mechanism in platelets of CdTe at room temperature

  16. Thermodynamic assessment of the Ag-Te binary system

    Energy Technology Data Exchange (ETDEWEB)

    Gierlotka, Wojciech, E-mail: gilu@uci.agh.edu.p [Laboratory of Physical Chemistry and Electrochemistry, Faculty of Non-Ferrous Metals, AGH University of Science and Technology, 30 Mickiewicza Av., 30-059 Krakow (Poland)

    2009-10-19

    Pure silver and its alloys are very important materials for various technological applications. Tellurium is one of the unwanted admixture in silver and is removed during metallurgical processes; however Ag-Te alloy is necessary for production of rewritable digital versatile discs. The knowledge of phase diagram of Ag-Te is essential for applications and refining process. The critical assessment of binary system Ag-Te has been done using literature information. Good agreement between experimental data reported in literature and calculated values has been found.

  17. Infrared absorption in PbTe single crystals

    International Nuclear Information System (INIS)

    Kudykina, T.A.

    1982-01-01

    A group-theoretical analysis is conducted to select rules for optical transitions between bands in PbTe single crystals. It is shown that transitions between valence bands which are near a forbidden band are also forbidden. The extra absorption observed in p-PbTe and p-Pbsub(1-x)Snsub(x)Te in the region between the self-absorption edge and the free-carrier absorption edge is probably connected with transitions between one of valence bands and the p-state of the impurity

  18. TeV Diffuse Emission From the Inner Galaxy

    Directory of Open Access Journals (Sweden)

    Amid Nayerhoda

    2018-04-01

    Full Text Available The TeV diffuse emission from the Galactic plane is produced by multi TeV electrons and nuclei interacting with radiation fields and ambient gas, respectively. Measurements of the TeV diffuse emission help constrain CR origin and transport properties. We present a preliminary analysis of HAWC diffuse emission data from the inner Galaxy. The HAWC measurements will be used to constrain particle transport properties close to the Galaxy center correlating the HAWC maps with predictions of the DRAGON code.

  19. Preparation of Ta Te2 thin films by laser ablation

    International Nuclear Information System (INIS)

    Zidan, M.D.; Alkhwam, M.; Alkhasm, M.

    2006-03-01

    The laser ablation system consisting of a vacuum chamber and Nd-YAG laser has been built for deposition TaTe 2 on three different substrates (Silicon, glass, and Aluminium). The surface topography of the prepared thin films has been studied by atomic force microscopy (AFM). TaTe 2 powder was characterized by using x-ray diffraction. The crystallinity of the thin films was examined by x-ray diffraction (XRD). The results show no peaks corresponding TaTe 2 , but there are some indications to the Ta 3 N 5 . (author)

  20. Recent state of CdTe-based radiation detectors

    International Nuclear Information System (INIS)

    Ohno, R.

    2004-01-01

    Recent state for development of CdTe-based radiation detectors is reviewed. The progress of the technologies such as the crystal growth of CdTe and CdZnTe, the deposition of electrodes on the crystal, the design of read out ASIC, and the bonding between crystal and ASIC, opened the way for the development of imaging devices for practical uses. A X-ray imager for non destructive inspections and a gamma ray imager for small animal radioisotope experiments or nuclear medicine are presented as examples. (author)

  1. Delineation of phase fields at the Te-rich end of the Ru-Te binary system

    International Nuclear Information System (INIS)

    Ali, M.; Bharadwaj, S.R.; Das, D.

    2005-01-01

    The tellurium rich side of the ruthenium-tellurium binary system was studied by differential thermal analysis. To avoid reported problems of Te loss by evaporation and reactive interference of Te to the thermocouples of the thermal analyzer, the present study made use of specially designed sealed quartz capsules as DTA containers. The thermal analyses were carried out over the compositional range of 0.66 x Te 1.00 with the help of SETARAM TG/DTA and other indigenously built thermal analyzers available in this laboratory. The thermal data generated for fifteen different compositions were interpreted for the nature of phase transitions occurring at their characteristic temperatures. The Ru-Te binary system was found to have a eutectic transformation at 444 deg. C at a composition of x Te = 0.918 and a monotectic transformation at 447 deg. C at a composition of x Te = 0.700. Up to 6 at.% Ru is soluble in Te at about 440 deg. C

  2. Strong sp-d exchange coupling in ZnMnTe/ZnMgTe core/shell nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Wojnar, Piotr; Janik, Elzbieta; Szymura, Malgorzata; Zaleszczyk, Wojciech; Kret, Slawomir; Klopotowski, Lukasz; Wojciechowski, Tomasz; Baczewski, Lech T.; Wiater, Maciej; Karczewski, Grzegorz; Wojtowicz, Tomasz; Kossut, Jacek [Institute of Physics, Polish Academy of Sciences, Al. Lotnikow 32/46, 02-668 Warsaw (Poland); Suffczynski, Jan; Papierska, Joanna [Institute of Experimental Physics, Warsaw University, ul. Hoza 69, 00-681 Warsaw (Poland)

    2014-07-15

    In this work, our recent progress in the growth and optical studies of telluride nanowire heterostructures containing a small molar fraction of magnetic Mn-ions of only a few percent is overviewed. ZnMnTe/ZnMgTe core/shell nanowires (NWs) are grown by molecular beam epitaxy by employing the vapor-liquid-solid growth mechanism assisted with gold catalyst. The structures are studied by means of photoluminescence and microphotoluminescence in an external magnetic field. In the first step, however, an activation of the near band edge emission from ZnTe and ZnMnTe nanowires is described, which is achieved by coating the nanowires with shells made of ZnMgTe. The role of these shells is to passivate Zn(Mn)Te surface states. The incorporation of Mn ions into the crystalline lattice of ZnMnTe nanowires is manifested as a considerable blue shift of near band edge emission with increasing Mn concentration inside the nanowire cores, which reflects directly the increase of their energy gap. In an external magnetic field the near band edge emission exhibits a giant spectral redshift accompanied by an increase of the circular polarization of the emitted light. Both effect are fingerprints of giant Zeeman splitting of the band edges due to sp-d exchange interaction between the band carriers and magnetic Mn-ions. (copyright 2014 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  3. Optical properties of CuCdTeO thin films sputtered from CdTe-CuO composite targets

    Energy Technology Data Exchange (ETDEWEB)

    Mendoza-Galván, A., E-mail: amendoza@qro.cinvestav.mx [Cinvestav-IPN, Unidad Querétaro, Libramiento Norponiente 2000, 76230 Querétaro (Mexico); Laboratory of Applied Optics, Department of Physics, Chemistry and Biology, Linköping University, SE-581 83 Linköping (Sweden); Arreola-Jardón, G. [Cinvestav-IPN, Unidad Querétaro, Libramiento Norponiente 2000, 76230 Querétaro (Mexico); Karlsson, L.H.; Persson, P.O.Å. [Thin Film Physics Division, Department of Physics, Chemistry and Biology, Linköping University, SE-581 83 Linköping (Sweden); Jiménez-Sandoval, S. [Cinvestav-IPN, Unidad Querétaro, Libramiento Norponiente 2000, 76230 Querétaro (Mexico)

    2014-11-28

    The effective complex dielectric function (ε) of Cu and O containing CdTe thin films is reported in the spectral range of 0.05 to 6 eV. The films were fabricated by rf sputtering from targets comprised by a mixture of CdTe and CuO powders with nominal Cu and O concentrations in the range of 2–10 at.%. Low concentration levels improved the crystalline quality of the films. Spectroscopic ellipsometry and transmittance measurements were used to determine ε. The critical point energies E{sub 1}, E{sub 1} + Δ{sub 1}, and E{sub 2} of CdTe are red-shifted with the incorporation of Cu and O. Also, an absorption band is developed in the infrared range which is associated with a mixture of CdTe and low resistivity phases Cu{sub 2−x}Te according to an effective medium analysis. The elemental distribution of the films was mapped by energy dispersive X-ray spectroscopy using scanning transmission electron microscopy. - Highlights: • Incorporation of 2 to 10 at.% of Cu and O atoms in CdTe films • Improved crystalline quality with 2 and 3 at.% of Cu and O • Complex dielectric function of Cu and O containing CdTe thin films • Effective medium modeling of below band-gap absorption.

  4. Numerical study of the influence of ZnTe thickness on CdS/ZnTe solar cell performance

    Science.gov (United States)

    Skhouni, Othmane; El Manouni, Ahmed; Mari, Bernabe; Ullah, Hanif

    2016-05-01

    At present most of II-VI semiconductor based solar cells use the CdTe material as an absorber film. The simulation of its performance is realized by means of various numerical modelling programs. We have modelled a solar cell based on zinc telluride (ZnTe) thin film as absorber in substitution to the CdTe material, which contains the cadmium element known by its toxicity. The performance of such photovoltaic device has been numerically simulated and the thickness of the absorber layer has been optimized to give the optimal conversion efficiency. A photovoltaic device consisting of a ZnTe layer as absorber, CdS as the buffer layer and ZnO as a window layer was modelled through Solar Cell Capacitance Simulator Software. Dark and illuminated I-V characteristics and the results for different output parameters of ZnO/CdS/ZnTe solar cell were analyzed. The effect of ZnTe absorber thickness on different main working parameters such as: open-circuit voltage Voc, short-circuit current density Jsc, fill factor FF, photovoltaic conversion efficiency η was intensely studied in order to optimize ZnTe film thickness. This study reveals that increasing the thickness of ZnTe absorber layer results in higher efficiency until a maximum value and then decreases slightly. This maximum was found to be 10% at ZnTe optimum thickness close to 2 µm. Contribution to the topical issue "Materials for Energy Harvesting, Conversion and Storage (ICOME 2015) - Elected submissions", edited by Jean-Michel Nunzi, Rachid Bennacer and Mohammed El Ganaoui

  5. Kinetic barriers for Cd and Te adatoms on Cd and Te terminated CdTe (111) surface using ab initio simulations

    Science.gov (United States)

    Naderi, Ebadollah; Nanavati, Sachin P.; Majumder, Chiranjib; Ghaisas, S. V.

    2014-03-01

    In the present work we have calculated using density functional theory (DFT), diffusion barrier potentials on both the CdTe (111) surfaces, Cd terminated (A-type) & Te terminated (B-type). We employ nudge elastic band method (NEB) for obtaining the barrier potentials. The barrier is computed for Cd and for Te adatoms on both A-type and B-type surfaces. We report two energetically favourable positions along the normal to the surface, one above and other below the surface. The one above the surface has binding energy slightly more the one below. According to the results of this work, binding energy (in all cases) for adatoms are reasonable and close to experimental data. The barrier potential for hopping adatoms (Cd and Te) on both the surfaces is less than 0.35 eV. Apart from these most probable sites, there are other at least two sites on both the types of surfaces which are meta stable. We have also computed barriers for hopping to and from these meta stable positions. The present results can shade light on the defect formation mechanism in CdTe thin films during growth. The authors would like to thank C-DAC for the computing time on its PARAM series of supercomputers and DST Govt. of India, for partial funding.

  6. Peculiarity of electron optical orientation in Hg1-xMnxTe and Hg1-xCdxTe alloys

    International Nuclear Information System (INIS)

    Georgitseh, E.I.; Ivanov-Omskij, V.I.; Pogorletskij, V.M.

    1991-01-01

    To clarify the effect of exchange interaction of electrons with manganese ions on electron spin relaxation, a study was made on optical orientation in Hg 1-x Mn x Te alloy and Hg 1-x Cd x Te alloys with similar parameters of energy spectrum at 4.2 K. It is shown that exchange interaction in semimagnetic Hg 1-x Mn x Te solutions, caused by the presence of manganese ions, reduced the time of spin relaxation. However, this reduction is not sufficient make optical orientation of electrons not observable

  7. The microstructure and composition of equilibrium phases formed in hypoeutectic Te-In alloy during solidification

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Baoguang [Department of Materials Physics and Chemistry, University of Science and Technology Beijing, Beijing 100083 (China); Hu, Jinwu [Center of Failure Analysis, Central Iron and Steel Research Institute, Beijing 100081 (China); Wang, Chongyun; Yang, Wenhui [Department of Materials Physics and Chemistry, University of Science and Technology Beijing, Beijing 100083 (China); Tian, Wenhuai, E-mail: wenhuaitian@ustb.edu.cn [Department of Materials Physics and Chemistry, University of Science and Technology Beijing, Beijing 100083 (China)

    2017-03-15

    As a key tellurium atoms evaporation source for ultraviolet detection photocathode, the hypoeutectic Te{sub 75}In{sub 25} alloy was prepared by employing a slow solidification speed of about 10{sup −2} K/s. The microstructure and chemical composition of the equilibrium phases formed in the as-prepared alloy were studied in this research work. The experimental results show that the as-prepared Te-In alloy was constituted by primary In{sub 2}Te{sub 5} phase and eutectic In{sub 2}Te{sub 5}/Te phases. The eutectic In{sub 2}Te{sub 5}/Te phases are distributed in the grain boundaries of primary In{sub 2}Te{sub 5} phase. With the slow solidification speed, a pure eutectic Te phase without any excessive indium solute was obtained, where Te content of eutectic Te phase is 100 mass%. Moreover, it can be considered that the stress between the In{sub 2}Te{sub 5} and Te phases plays an important role in reducing the tellurium vapor pressure in Te{sub 75}In{sub 25} alloy. - Highlights: • The microstructure of Te-In alloy as an evaporation source was analyzed. • A pure eutectic Te phase was obtained by using a slow solidification speed method. • The relation between vapor pressure and inner-stress in the alloy was discussed.

  8. Mogelijkheden om vroeg tijdig bladrandproblemen te signaleren met MIPS bij Hortensia

    NARCIS (Netherlands)

    Noort, van F.R.; Jalink, H.

    2010-01-01

    Met geavanceerde camera technieken zijn beelden vast te leggen van fotosynthese activiteit en het is ook mogelijk gebleken om bladgedeelten met stress vast te leggen, zonder dat deze stress met het blote oog al te zien is. Dit opent perspectieven om monitorringonderzoek te doen naar het ontstaan van

  9. Thermoelectric Response in Single Quintuple Layer Bi2Te3

    KAUST Repository

    Sharma, S.; Schwingenschlö gl, Udo

    2016-01-01

    of single quintuple layer Bi2Te3 by considering both the electron and phonon transport. On the basis of first-principles density functional theory, the electronic and phononic contributions are calculated by solving Boltzmann transport equations

  10. HgCdTe e-avalanche photodiode detector arrays

    Directory of Open Access Journals (Sweden)

    Anand Singh

    2015-08-01

    Full Text Available Initial results on the MWIR e-APD detector arrays with 30 μm pitch fabricated on LPE grown compositionally graded p-HgCdTe epilayers are presented. High dynamic resistance times active area (R0A product 2 × 106 Ω-cm2, low dark current density 4 nA/cm2 and high gain 5500 at -8 V were achieved in the n+-υ-p+ HgCdTe e-APD at 80 K. LPE based HgCdTe e-APD development makes this technology amenable for adoption in the foundries established for the conventional HgCdTe photovoltaic detector arrays without any additional investment.

  11. BOREAS TE-04 Gas Exchange Data from Boreal Tree Species

    Data.gov (United States)

    National Aeronautics and Space Administration — Contains TE-04 data on gas exchange studies of photosynthesis, respiration and stomatal conductance of boreal forest species using the MPH-1000 system.

  12. BOREAS TE-04 Branch Bag Data from Boreal Tree Species

    Data.gov (United States)

    National Aeronautics and Space Administration — ABSTRACT: Contains 1996 TE-04 data of branch bag studies of photosynthesis, respiration and stomatal conductance of boreal forest species using the open MPH-1000...

  13. Thermal characterization of Se-Te thin films

    Czech Academy of Sciences Publication Activity Database

    Svoboda, R.; Kincl, Miloslav; Málek, J.

    2015-01-01

    Roč. 644, 25 September (2015), s. 40-46 ISSN 0925-8388 Institutional support: RVO:61389013 Keywords : krystallization kinetics * DSC * Se-Te glass Subject RIV: CA - Inorganic Chemistry Impact factor: 3.014, year: 2015

  14. DPAC measurements on 129sup(m)TeSi

    International Nuclear Information System (INIS)

    Kemerink, G.J.; Pleiter, F.; Arendes, A.R.

    1981-01-01

    Using results of DPAC measurements on 129 sup(m)TeSi it is shown that the absorption lines in the Moessbauer spectra obtained with unannealed implanted sources must be ascribed mainly as belonging to a quadrupole split multiplet. (orig.)

  15. Interaction of porphyrins with CdTe quantum dots

    International Nuclear Information System (INIS)

    Zhang Xing; Liu Zhongxin; Ma Lun; Hossu, Marius; Chen Wei

    2011-01-01

    Porphyrins may be used as photosensitizers for photodynamic therapy, photocatalysts for organic pollutant dissociation, agents for medical imaging and diagnostics, applications in luminescence and electronics. The detection of porphyrins is significantly important and here the interaction of protoporphyrin-IX (PPIX) with CdTe quantum dots was studied. It was observed that the luminescence of CdTe quantum dots was quenched dramatically in the presence of PPIX. When CdTe quantum dots were embedded into silica layers, almost no quenching by PPIX was observed. This indicates that PPIX may interact and alter CdTe quantum dots and thus quench their luminescence. The oxidation of the stabilizers such as thioglycolic acid (TGA) as well as the nanoparticles by the singlet oxygen generated from PPIX is most likely responsible for the luminescence quenching. The quenching of quantum dot luminescence by porphyrins may provide a new method for photosensitizer detection.

  16. Summary of the TeV33 working group

    International Nuclear Information System (INIS)

    Bagley, P.P.; Bieniosek, F.M.; Colestock, P.

    1996-10-01

    This summary of the TeV33 working group at Snowmass reports on work in the areas of Tevatron store parameters, the beam-beam interaction, Main Injector intensity (slip stacking), antiproton production, and electron cooling

  17. Synthesis and chemical etching of Te/C nanocables

    Indian Academy of Sciences (India)

    Key Laboratory of Enhanced Oil & Gas Recovery of Ministry of Education, Northeast Petroleum University, ... MS received 31 December 2010; revised 5 April 2011. Abstract. .... that the formation process of Te/C nanocables may undergo.

  18. MARVEL om de effecten van IGP in kaart te brengen

    NARCIS (Netherlands)

    Hengst-Bruggeling, M. den; Heesmans, S.; Graaf, H.A.L.M. de

    2010-01-01

    Informatiegestuurde politie betekent dat op basis van actuele en betrouwbare informatie en analyses, rationele keuzes worden gemaakt, waardoor mensen en middelen optimaal kunnen worden ingezet en de bedrijfsdoelen worden bereikt. Een belangrijke reden om informatiegestuurde politie (IGP) te

  19. TeV Blazars and Cosmic Infrared Background Radiation

    OpenAIRE

    Aharonian, F. A.

    2001-01-01

    The recent developments in studies of TeV radiation from blazars are highlighted and the implications of these results for derivation of cosmologically important information about the cosmic infrared background radiation are discussed.

  20. The effect of excitons on CdTe solar cells

    International Nuclear Information System (INIS)

    Karazhanov, S. Zh.; Zhang, Y.; Mascarenhas, A.; Deb, S.

    2000-01-01

    Temperature and doping-level dependence of CdTe solar cells is investigated, taking into account the involvement of excitons on photocurrent transport. We show that the density of excitons in CdTe is comparable with that of minority carriers at doping levels ≥10 15 cm -3 . From the investigation of the dark-saturation current, we show that the product of electron and hole concentrations at equilibrium is several orders of magnitude more than the square of the intrinsic carrier concentration. With this assumption, we have studied the effect of excitons on CdTe solar cells, and the effect is negative. CdTe solar cell performance with excitons included agrees well with existing experimental results. (c) 2000 American Institute of Physics

  1. Probing electroweak symmetry breaking at multi-TeV colliders

    International Nuclear Information System (INIS)

    Chanowitz, M.S.

    1987-01-01

    Low energy theorems are derived for scattering of longitudinally polarized W and Z's, providing the basis for an estimate of the observable signal if electroweak symmetry breaking is due to new physics at the TeV scale. A pp collider with L, √s = 40 TeV, 10 33 cm. -2 s -1 is just sufficient to observe the signal while pp colliders with 40, 10 32 or 20, 10 33 are not. A collider that is sensitive to the TeV-scale signal provides valuable information about symmetry breaking whether the masses of the associated new particles are below, within, or above the 1-2 TeV region. 6 refs., 6 figs., 2 tabs

  2. Forming Glasses from Se and Te

    Directory of Open Access Journals (Sweden)

    Pierre Lucas

    2009-10-01

    Full Text Available Despite being close neighbors on the Periodic Table, selenium and tellurium present a totally different abilities to form glasses. Se is a very good glass former, and gives rise to numerous glass compositions which are popular for their transparency in the infrared range and their stability against crystallization. These glasses can be shaped into sophisticated optical devices such as optical fibers, planar guides or lenses. Nevertheless, their transparencies are limited at about 12 μm (depending on the thickness of the optical systems due to the relatively small mass of the Se element. On the other hand, tellurium is heavier and its use in substitution for Se permits to shift the IR cutoff beyond 20 μm. However, the semimetallic nature of Te limits its glass formation ability and this glass family is known to be unstable and consequently has found application as phase change material in the Digital Versatile Disk (DVD technology. In this paper, after a review of selenide glasses and their applications, it will be shown how, in a recent past, it has been possible to stabilize tellurium glasses by introducing new elements like Ga or I in their compositions.

  3. Phytophthora rotråte i juletrefelt

    DEFF Research Database (Denmark)

    Talgø, Venche; Thomsen, Iben Margrete

    2015-01-01

    Phytophthora rotråte forårsaket av ulike arter av Phytophthora er et stort problem i juletreproduksjonen iUSA. I Norge er det også rapportert om flere tilfeller av skade på grunn av Phytophthora både i juletrær og klippegrønt, men så langt ikke i Danmark. I begge landene er flere arter av...... Phytophthora funnet på treaktige vekster i grøntanlegg. Vi har også sett en urovekkende spredning av Phytophthora til løvtrær i bynære skoger, vassdrag og naturområder det siste tiåret, spesielt i Norge. Både i Norge og Danmark har vi undersøkt vann i eller like ved juletreplantinger og funnet flere...... Phytophthora-arter, så dette er en skadegjører juletredyrkere må være på vakt overfor...

  4. Guarda compartilhada: aspectos teóricos

    Directory of Open Access Journals (Sweden)

    Ana Flávia Cunha de Lima

    2010-12-01

    Full Text Available No dia 13/06/2008 foi aprovado o projeto de lei que institui no Código Civil, a guarda compartilhada dos filhos, em caso de separação dos pais. O objetivo desta legislação é a preservação dos laços entre pais e filhos e seguridade às crianças e adolescentes do direito à convivência familiar. O presente trabalho, através de estudos das teorias já existentes e análise de legislações pertinentes, apresenta sucintas comparações teóricas e tece considerações acerca do que prescreve a “lei da guarda compartilhada”, relacionando-a com o que pressupõe o Estatuto da Criança e do Adolescente (ECA quanto ao direito à convivência familiar; quanto aos deveres inerentes ao exercício do poder familiar e, ainda, quanto à obrigação da família de promover o bem estar da criança.

  5. Decifra-me ou devoro-te

    Directory of Open Access Journals (Sweden)

    João (Alegria Alves dos Reis Junior

    Full Text Available A popularização do hardware e do software para produção de textos, sons e imagens, torna mais viáveis os planos daqueles que se propõem a produzir mídia com crianças e adolescentes num contexto educativo. Muitos são os que buscam uma leitura lúcida e crítica da programação da TV, dos websites e mesmo da imprensa escrita a partir da experimentação empírica da produção de audiovisuais. Pois, para boa parte dos teóricos e educadores, os males da mídia residiriam basicamente no conteúdo que ela veicula e na padronização dos formatos e da linguagem audiovisual dos produtos, problemas que poderiam ser superados com uma reflexão a partir de uma produção alternativa. Este artigo sistematiza alguns aspectos da evolução da TV e da audiência nos últimos anos e aponta a tendência de produção de mídia com crianças e adolescentes que vem sendo colocada em prática nas escolas e organizações não-governamentais, como parte essencial do processo de formação dos futuros cidadãos.

  6. BOREAS TE-9 NSA Leaf Chlorophyll Density

    Science.gov (United States)

    Hall, Forrest G. (Editor); Curd, Shelaine (Editor); Margolis, Hank; Sy, Mikailou

    2000-01-01

    The BOREAS TE-9 team collected several data sets related to chemical and photosynthetic properties of leaves in boreal forest tree species. These data were collected to help provide an explanation of potential seasonal and spatial changes of leaf pigment properties in boreal forest species at the NSA. At different dates (FFC-Winter, FFC-Thaw, IFC-1, IFC-2, and IMC-3), foliage samples were collected from the upper third of the canopy for five NSA sites (YJP, OJP, OBS, UBS, and OA) near Thompson, Manitoba. Subsamples of 100 needles for black spruce, 20 needles for jack pine, and single leaf for trembling aspen were cut into pieces and immersed in a 20-mL DMF aliquot in a Nalgene test tube. The extracted foliage materials were then oven-dried at 68 C for 48 hours and weighed. Extracted leaf dry weight was converted to a total leaf area basis to express the chlorophyll content in mg/sq cm of total leaf area. The data are provided in tabular ASCII files. The data files are available on a CD-ROM (see document number 20010000884), or from the Oak Ridge National Laboratory (ORNL) Distributed Active Archive Center (DAAC).

  7. Analysis of Etched CdZnTe Substrates

    Science.gov (United States)

    Benson, J. D.; Bubulac, L. O.; Jaime-Vasquez, M.; Lennon, C. M.; Arias, J. M.; Smith, P. J.; Jacobs, R. N.; Markunas, J. K.; Almeida, L. A.; Stoltz, A.; Wijewarnasuriya, P. S.; Peterson, J.; Reddy, M.; Jones, K.; Johnson, S. M.; Lofgreen, D. D.

    2016-09-01

    State-of-the-art as-received (112)B CdZnTe substrates have been examined for surface impurity contamination and polishing residue. Two 4 cm × 4 cm and one 6 cm × 6 cm (112)B state-of-the-art as-received CdZnTe wafers were analyzed. A maximum surface impurity concentration of Al = 1.7 × 1015 atoms cm-2, Si = 3.7 × 1013 atoms cm-2, Cl = 3.12 × 1015 atoms cm-2, S = 1.7 × 1014 atoms cm-2, P = 1.1 × 1014 atoms cm-2, Fe = 1.0 × 1013 atoms cm-2, Br = 1.2 × 1014 atoms cm-2, and Cu = 4 × 1012 atoms cm-2 was observed on the as-received CdZnTe wafers. CdZnTe particulates and residual SiO2 polishing grit were observed on the surface of the as-received (112)B CdZnTe substrates. The polishing grit/CdZnTe particulate density on CdZnTe wafers was observed to vary across a 6 cm × 6 cm wafer from ˜4 × 107 cm-2 to 2.5 × 108 cm-2. The surface impurity and damage layer of the (112)B CdZnTe wafers dictate that a molecular beam epitaxy (MBE) preparation etch is required. The contamination for one 4 cm × 4 cm and one 6 cm × 6 cm CdZnTe wafer after a standard MBE Br:methanol preparation etch procedure was also analyzed. A maximum surface impurity concentration of Al = 2.4 × 1015 atoms cm-2, Si = 4.0 × 1013 atoms cm-2, Cl = 7.5 × 1013 atoms cm-2, S = 4.4 × 1013 atoms cm-2, P = 9.8 × 1013 atoms cm-2, Fe = 1.0 × 1013 atoms cm-2, Br = 2.9 × 1014 atoms cm-2, and Cu = 5.2 × 1012 atoms cm-2 was observed on the MBE preparation-etched CdZnTe wafers. The MBE preparation-etched surface contamination consists of Cd(Zn)Te particles/flakes. No residual SiO2 polishing grit was observed on the (112)B surface.

  8. Magneto-transport in CdTe/CdMnTe dilute magnetic semiconductor single barrier structures

    International Nuclear Information System (INIS)

    Lyons, V.R.

    1999-03-01

    This thesis presents work done on electrical transport through dilute magnetic semiconductor (DMS) single barriers in both zero and non-zero magnetic fields. The fields are applied either perpendicular or parallel to the DMS layers. The main samples under investigation consist of 100 A and 200 A CdTe/Cd 0.8 Mn 0.2 Te/CdTe single barrier heterostructures. In addition electrical characterisation of the non magnetic layers is performed. Current through the barrier is measured as a function of voltage, magnetic field and temperature. A theoretical model is derived in order to calculate the current as a function of barrier height, barrier width, emitting layer carrier concentration, applied bias and temperature. These variables are then treated as fitting parameters and comparisons are made between the calculated and the experimental currents. The barriers are shown to produce non-Ohmic transport. The roles of quantum mechanical tunnelling and thermal activation across the barrier are investigated and shown to be highly mixed. An unexpectedly high degree of tunnelling is found to occur at high temperatures, within the region previously assumed to be dominated by thermal activation. Moreover the barrier height is found to be lower and the width greater than expected. These observations suggest that a high level of Mn diffusion occurs, possibly due to In dopant related effects. This suggestion is validated by the high emitting layer carrier concentration suggested by the fitting. At low temperatures and voltages the thicker barrier sample is shown to contain a parasitic leak path which short-circuits the barrier. This leak may exist in both samples but only becomes dominant where the barriers are sufficiently opaque to the incident carriers. Changes in a magnetic field are expected to be due to sp-d exchange induced giant Zeeman splitting in the barrier and either normal spin splitting or sp-d exchange effects in the emitter regions. The application of a magnetic field is

  9. Heavy Higgs bosons at 14 TeV and 100 TeV

    Energy Technology Data Exchange (ETDEWEB)

    Hajer, Jan [Department of Physics, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong S.A.R., P.R.C. (China); Jockey Club Institute for Advanced Study,The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong S.A.R., P.R.C. (China); Li, Ying-Ying; Liu, Tao; Shiu, John F.H. [Department of Physics, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong S.A.R., P.R.C. (China)

    2015-11-18

    Searching for Higgs bosons beyond the Standard Model (BSM) is one of the most important missions for hadron colliders. As a landmark of BSM physics, the MSSM Higgs sector at the LHC is expected to be tested up to the scale of the decoupling limit of O(1) TeV, except for a wedge region centered around tan β∼3–10, which has been known to be difficult to probe. In this article, we present a dedicated study testing the decoupled MSSM Higgs sector, at the LHC and a next-generation pp-collider, proposing to search in channels with associated Higgs productions, with the neutral and charged Higgs further decaying into tt and tb, respectively. In the case of neutral Higgs we are able to probe for the so far uncovered wedge region via pp→bbH/A→bbtt. Additionally, we cover the the high tan β range with pp→bbH/A→bbττ. The combination of these searches with channels dedicated to the low tan β region, such as pp→H/A→tt and pp→ttH/A→tttt potentially covers the full tan β range. The search for charged Higgs has a slightly smaller sensitivity for the moderate tan β region, but additionally probes for the higher and lower tan β regions with even greater sensitivity, via pp→tbH{sup ±}→tbtb. While the LHC will be able to probe the whole tan β range for Higgs masses of O(1) TeV by combining these channels, we show that a future 100 TeV pp-collider has a potential to push the sensitivity reach up to ∼O(10) TeV. In order to deal with the novel kinematics of top quarks produced by heavy Higgs decays, the multivariate Boosted Decision Tree (BDT) method is applied in our collider analyses. The BDT-based tagging efficiencies of both hadronic and leptonic top-jets, and their mutual fake rates as well as the faking rates by other jets (h, Z, W, b, etc.) are also presented.

  10. Hyperthermal K--TeF6 molecular beam scattering

    International Nuclear Information System (INIS)

    Wagner, A.F.; Young, C.E.; Pobo, L.G.; Wexler, S.

    1982-01-01

    Angular distributions of K + product ions from collisions of a beam of hyperthermal K atoms with a cross beam of thermal TeF 6 molecules were determined at 13.7 and 23.7 eV (lab). The angular yields of K atom products from the same system were too low to permit measurement of angular distributions. From the integrated yields, the K + ion/K atom branching ratio was determined to be greater than 10 3 . In addition to the extremely large branching ratio, the differential cross sections exhibited several other unusual characteristics: (a) the lack of small angle scattering, corresponding to virtual absence of covalent scattering, (b) two peaks in the differential cross section with an outer rainbow feature at very large scattering angles (approx.275 eV deg). The observations are unexpected from previous experimental and theoretical studies of electron transfer reactions and from the electronic and structural properties of TeF 6 and TeF - 6 . A simplified dynamics model based on formation of electronically excited TeF - 6 in the initial electron transfer, followed by inner crossings leading to formation of electronically and vibrationally unexcited TeF - 6 or dissociation to TeF - 5 and other ionic products, has been developed which accounts for the experimental results. The model suggests that the observed two peaks in the differential cross section are due to the production of TeF - 6 (inner peak) or TeF - 5 and other ionic dissociation products (outer peak). The model also suggests that the observed branching ratio requires a vertical electron affinity of < or =1.9 eV, much lower than its adiabatic electron affinity of 3.3 eV

  11. THz induced nonlinear absorption in ZnTe

    DEFF Research Database (Denmark)

    Pedersen, Pernille Klarskov; Jepsen, Peter Uhd

    2015-01-01

    Absorption spectra of ZnTe during strong-field THz interaction are investigated. Bleaching of the difference phonon modes below the fundamental TO mode is observed when field strengths higher than 4 MV/cm are applied.......Absorption spectra of ZnTe during strong-field THz interaction are investigated. Bleaching of the difference phonon modes below the fundamental TO mode is observed when field strengths higher than 4 MV/cm are applied....

  12. Leakage current measurements on pixelated CdZnTe detectors

    NARCIS (Netherlands)

    Dirks, B.; Blondel, C.; Daly, F.; Gevin, O.; Limousin, O.; Lugiez, F.

    2006-01-01

    In the field of the R&D of a new generation hard X-ray cameras for space applications we focus on the use of pixelated CdTe or CdZnTe semiconductor detectors. They are covered with 64 (0.9×0.9 mm2) or 256 (0.5×0.5 mm2) pixels, surrounded by a guard ring and operate in the energy ranging from several

  13. RailSiTe® (Rail Simulation and Testing

    Directory of Open Access Journals (Sweden)

    Martin Johne

    2016-10-01

    Full Text Available RailSiTe® (Rail Simulation and Testing is DLR’s rail simulation and testing laboratory (see Figure 1. It is the implementation of a fully modular concept for the simulation of on-board and trackside control and safety technology. The RailSiTe® laboratory additionally comprises the RailSET (Railway Simulation Environment for Train Drivers and Operators human-factors laboratory, a realistic environment containing a realistic train mockup including 3D simulation.

  14. Low-temperature sintering and microwave dielectric properties of Al2TeO6–TeO2 ceramics

    International Nuclear Information System (INIS)

    Kagomiya, Isao; Kodama, Yuichiro; Shimizu, Yukihiro; Kakimoto, Ken-ichi; Ohsato, Hitoshi; Miyauchi, Yasuharu

    2015-01-01

    Highlights: • This is the first study of dielectric properties of Al 2 TeO 6 –TeO 2 sintered at 900 °C. • The sintering at 900 °C contributed to densification, but it causes TeO 2 evaporation. • The annealing at 750 °C was effective for the further densification. • The both ε r and Q · f in the Al 2 TeO 6 –TeO 2 were improved with the annealing. - Abstract: We propose Al 2 TeO 6 –TeO 2 ceramics as a candidate for use as low-temperature co-fired ceramics (LTCC). We investigated microwave dielectric properties and low-temperature sintering conditions for Al 2 TeO 6 –TeO 2 ceramics. The calcined Al 2 TeO 6 powders were sintered at 900 °C for 2–10 h with 30–50 wt% additive TeO 2 . X-ray powder diffraction patterns showed that the sintered samples were Al 2 TeO 6 –TeO 2 composite with no other phase. The apparent density was improved with the additive TeO 2 content of up to 45 wt%. The dielectric constant (ε r ) increased by adding TeO 2 content from 35 to 45 wt%, although the quality factor (Q · f) decreased. During sintering at 900 °C, the ε r of the Al 2 TeO 6 –TeO 2 decreased slightly, whereas the Q · f increased gradually. The observed microstructures showed that the longer sintering time makes fewer pores in Al 2 TeO 6 –TeO 2 ceramics. Sintering at 900 °C for a long time contributes to densification, but it simultaneously causes TeO 2 evaporation. To prevent TeO 2 evaporation, we investigated the effects of annealing at 750 °C after sintering at 900 °C. Apparent densities or ε r for the annealed samples were higher than those of the non-annealed samples. The Q · f improved with increasing annealing duration time, suggesting that sintering proceeded well during annealing with slower TeO 2 evaporation at 750 °C. The results show that annealing at 750 °C is effective to facilitate sintering and to control TeO 2 evaporation

  15. Enhancing photoresponsivity using MoTe2-graphene vertical heterostructures

    Science.gov (United States)

    Kuiri, Manabendra; Chakraborty, Biswanath; Paul, Arup; Das, Subhadip; Sood, A. K.; Das, Anindya

    2016-02-01

    MoTe2 with a narrow band-gap of ˜1.1 eV is a promising candidate for optoelectronic applications, especially for the near-infrared photo detection. However, the photo responsivity of few layers MoTe2 is very small (graphene vertical heterostructures have a much larger photo responsivity of ˜20 mA W-1. The trans-conductance measurements with back gate voltage show on-off ratio of the vertical transistor to be ˜(0.5-1) × 105. The rectification nature of the source-drain current with the back gate voltage reveals the presence of a stronger Schottky barrier at the MoTe2-metal contact as compared to the MoTe2-graphene interface. In order to quantify the barrier height, it is essential to measure the work function of a few layers MoTe2, not known so far. We demonstrate a method to determine the work function by measuring the photo-response of the vertical transistor as a function of the Schottky barrier height at the MoTe2-graphene interface tuned by electrolytic top gating.

  16. High-quality CdTe films from nanoparticle precursors

    Energy Technology Data Exchange (ETDEWEB)

    Schulz, D.L.; Pehnt, M.; Urgiles, E. [National Renewable Energy Lab., Golden, CO (United States)] [and others

    1996-05-01

    In this paper the authors demonstrate that nanoparticulate precursors coupled with spray deposition offers an attractive route into electronic materials with improved smoothness, density, and lower processing temperatures. Employing a metathesis approach, cadmium iodide was reacted with sodium telluride in methanol solvent, resulting in the formation of soluble NaI and insoluble CdTe nanoparticles. After appropriate chemical workup, methanol-capped CdTe colloids were isolated. CdTe thin film formation was achieved by spray depositing the nanoparticle colloids (25-75 {Angstrom} diameter) onto substrates at elevated temperatures (T = 280-440{degrees}C) with no further thermal treatment. These films were characterized by x-ray diffraction (XRD), x-ray photoelectron spectroscopy (XPS), and atomic force microscopy (AFM). Cubic CdTe phase formation was observed by XRD, with a contaminant oxide phase also detected. XPS analysis showed that CdTe films produced by this one-step method contained no Na or C and substantial O. AFM gave CdTe grain sizes of {approx}0.1-0.3 {mu}m for film sprayed at 400{degrees}C. A layer-by-layer film growth mechanism proposed for the one-step spray deposition of nanoparticle precursors will be discussed.

  17. CdTe aggregates in KBr crystalline matrix

    International Nuclear Information System (INIS)

    Bensouici, A.; Plaza, J.L.; Dieguez, E.; Halimi, O.; Boudine, B.; Addala, S.; Guerbous, L.; Sebais, M.

    2009-01-01

    In this work, we report the experimental results on the fabrication and optical characterization of Czochralski (Cz) grown KBr single crystals doped with CdTe crystallites. The results of the optical absorption have shown two bands, the first one located at 250 nm demonstrates the incorporation of cadmium atoms in the KBr host followed by a partial chemical decomposition of CdTe, the second band located at 585 nm shows an optical response of CdTe aggregates. Photoluminescence spectra at room temperature before annealing showed a band located at 520 nm (2.38 eV), with a blue shift from the bulk gap of 0.82 eV (E g (CdTe)=1.56 eV). While the photoluminescence spectra after annealing at 600 deg. C showed a band situated at 640 nm (1.93 eV), these bands are due to band-to-band transitions of CdTe nanocrystals with a blue shift from the bulk gap at 0.38 eV. Blue shift in optical absorption and photoluminescence spectra confirm nanometric size of dopant. X-ray diffraction (XRD) spectra have shown the incorporation of CdTe aggregates in KBr.

  18. CdTe aggregates in KBr crystalline matrix

    Energy Technology Data Exchange (ETDEWEB)

    Bensouici, A., E-mail: bensouicia@yahoo.f [Laboratory of Crystallography, Department of Physics, Mentouri-Constantine University, Constantine 25000 (Algeria); Plaza, J.L., E-mail: joseluis.plaza@uam.e [Crystal Growth Laboratory (CGL), Departamento de Fisica de Materiales, Universidad Autonoma de Madrid, Madrid (Spain); Dieguez, E. [Crystal Growth Laboratory (CGL), Departamento de Fisica de Materiales, Universidad Autonoma de Madrid, Madrid (Spain); Halimi, O.; Boudine, B.; Addala, S. [Laboratory of Crystallography, Department of Physics, Mentouri-Constantine University, Constantine 25000 (Algeria); Guerbous, L. [Centre de recherche nucleaire d' Alger (CRNA), Alger 16000 (Algeria); Sebais, M. [Laboratory of Crystallography, Department of Physics, Mentouri-Constantine University, Constantine 25000 (Algeria)

    2009-09-15

    In this work, we report the experimental results on the fabrication and optical characterization of Czochralski (Cz) grown KBr single crystals doped with CdTe crystallites. The results of the optical absorption have shown two bands, the first one located at 250 nm demonstrates the incorporation of cadmium atoms in the KBr host followed by a partial chemical decomposition of CdTe, the second band located at 585 nm shows an optical response of CdTe aggregates. Photoluminescence spectra at room temperature before annealing showed a band located at 520 nm (2.38 eV), with a blue shift from the bulk gap of 0.82 eV (E{sub g} (CdTe)=1.56 eV). While the photoluminescence spectra after annealing at 600 deg. C showed a band situated at 640 nm (1.93 eV), these bands are due to band-to-band transitions of CdTe nanocrystals with a blue shift from the bulk gap at 0.38 eV. Blue shift in optical absorption and photoluminescence spectra confirm nanometric size of dopant. X-ray diffraction (XRD) spectra have shown the incorporation of CdTe aggregates in KBr.

  19. Study on response function of CdTe detector

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Hyunduk; Cho, Gyuseong [Department of Nuclear and Quantum Engineering, Korea Advanced Institute of Science and Technology, Daejeon 305-701 (Korea, Republic of); Kang, Bo-Sun [Department of Radiological Science, Catholic University of Daegu, Kyoungsan, Kyoungbuk 712-702 (Korea, Republic of)], E-mail: bskang@cu.ac.kr

    2009-10-21

    So far the origin of the mechanism of light emission in the sonoluminescence has not elucidated whether it is due to blackbody radiation or bremsstrahlung. The final goal of our study is measuring X-ray energy spectrum using high-sensitivity cadmium telluride (CdTe) detector in order to obtain information for understanding sonoluminescence phenomena. However, the scope of this report is the measurement of X-ray spectrum using a high-resolution CdTe detector and determination of CdTe detector response function to obtain the corrected spectrum from measured soft X-ray source spectrum. In general, the measured spectrum was distorted by the characteristics of CdTe detector. Monte Carlo simulation code, MCNP, was used to obtain the reference response function of the CdTe detector. The X-ray spectra of {sup 57}Co, {sup 133}Ba, and {sup 241}Am were obtained by a 4x4x1.0(t) mm{sup 3} CdTe detector at room temperature.

  20. Thermophysical Properties of Liquid Te: Density, Electrical Conductivity, and Viscosity

    Science.gov (United States)

    Li, C.; Su, C.; Lehoczky, S. L.; Scripa, R. N.; Ban, H.; Lin, B.

    2004-01-01

    The thermophysical properties of liquid Te, namely, density, electrical conductivity, and viscosity, were determined using the pycnometric and transient torque methods from the melting point of Te (723 K) to approximately 1150 K. A maximum was observed in the density of liquid Te as the temperature was increased. The electrical conductivity of liquid Te increased to a constant value of 2.89 x 10(exp 5 OMEGA-1m-1) as the temperature was raised above 1000 K. The viscosity decreased rapidly upon heating the liquid to elevated temperatures. The anomalous behaviors of the measured properties are explained as caused by the structural transitions in the liquid and discussed in terms of Eyring's and Bachiskii's predicted behaviors for homogeneous liquids. The Properties were also measured as a function of time after the liquid was coded from approximately 1173 or 1123 to 823 K. No relaxation phenomena were observed in the properties after the temperature of liquid Te was decreased to 823 K, in contrast to the relaxation behavior observed for some of the Te compounds.

  1. Investigations of small-gap semiconductors: HgTe, HgMnTe and PbMnTe in the far infrared region using Fourierspectroscopic methods

    International Nuclear Information System (INIS)

    Roschger, I.

    1985-05-01

    A special method was developed in the framework of this thesis to solve the inherent problem of dynamic range in Fourier spectrometry by using optical compensation. The so-called dual beam spectrometer consists of two coupled interferometers. This technique was adapted for measurements on small gap semiconductors. The investigated sample was n-HgTe, for which a resonant acceptor absorption in the conduction band was predicted. By alloying Mn-ions into the inverted gap-HgTe-crystal the band gap can be tuned to an open gap band structure. The mixed crystal exhibits additional structures in the phonon spectrum. The model of Barker and Verleur (including clustering) was applied. The substitution of Mn-ions in the IV-VI-compound PbTe leads to semimagnetic effects resolved by magneto-reflectivity measurements. The extrapolation in the fan-charts to zero-magnetic field suggests residual spin splitting either in the conduction and/or in the valence band. To evaluate the data an oscillator fit was applied to cyclotron absorption (Faraday- and Voigt-configuration) and was proved to be in agreement with the experimental data. Zero field splitting appears in PbMnTe in the valence band and indicates a weak ferromagnetism already observed in other measurements cited in the literature. Kramers-Kronig-data were in agreement with the theoretical results of the Barker-Verleur-model. The influence of clustering in the mixed crystal HgMnTe on the phonon spectra must be taken into account for Mn concentrations > 20%. The existence of the resonance acceptor state in HgTe was proved by optical transmission measurements. (Author, shortened by G.Q.)

  2. Analysis of spatiotemporal soil moisture patterns at the catchment scale using a wireless sensor network

    Science.gov (United States)

    Bogena, Heye R.; Huisman, Johan A.; Rosenbaum, Ulrike; Weuthen, Ansgar; Vereecken, Harry

    2010-05-01

    . Topographic features showed the strongest correlation with soil moisture during dry periods, indicating that the control of topography on the soil moisture pattern depends on the soil water status. Interpolation using the external drift kriging method demonstrated that the high sampling density allows capturing the key patterns of soil moisture variation in the Wüstebach catchment. References: [1] Bogena, H.R., J.A. Huisman, C. Oberdörster, H. Vereecken (2007): Evaluation of a low-cost soil water content sensor for wireless network applications. Journal of Hydrology: 344, 32- 42. [2] Rosenbaum, U., Huisman, J.A., Weuthen, A., Vereecken, H. and Bogena, H.R. (2010): Quantification of sensor-to-sensor variability of the ECH2O EC-5, TE and 5TE sensors in dielectric liquids. Accepted for publication in Vadose Zone Journal (09/2009). [3] Famiglietti J.S., D. Ryu, A. A. Berg, M. Rodell and T. J. Jackson (2008), Field observations of soil moisture variability across scales, Water Resour. Res. 44, W01423, doi:10.1029/2006WR005804.

  3. Vibrational properties of homopolar and heteropolar surfaces and interfaces of the CdTe/HgTe system

    International Nuclear Information System (INIS)

    Rey Gonzalez, R.; Camacho B, A.; Quiroga, L.

    1993-08-01

    We present results of calculations for the density of vibrational modes for (001) and (111) homopolar, as well as for (011) heteropolar free surfaces of CdTe and HgTe. A rigid-ion model with a dynamical matrix parametrization including force constants up to second neighbours is used. We report on the existence of highly localized surface resonant modes at the top of the acoustic branch for CdTe and the bottom of the optical branch for HgTe. A different behaviour in the three directions analysed is found. The interface atomic planes show themselves as phonon gapless layers. The contribution of in-plane and out-of-plane vibration is analysed for both the surface and interface cases. (author). 7 refs, 7 figs

  4. Ferro electrical properties of GeSbTe thin films; Propiedades ferroelectricas de peliculas delgadas de GeSbTe

    Energy Technology Data Exchange (ETDEWEB)

    Gervacio A, J. J.; Prokhorov, E.; Espinoza B, F. J., E-mail: jgervacio@qro.cinvestav.m [IPN, Centro de Investigacion y de Estudios Avanzados, Unidad Queretaro, Libramiento Norponiente No. 2000, Juriquilla, 76230 Queretaro (Mexico)

    2011-07-01

    The aim of this work is to investigate and compare ferro electrical properties of thin GeSbTe films with composition Ge{sub 4}Sb{sub 1}Te{sub 5} (with well defined ferro electrical properties) and Ge{sub 2}Sb{sub 2}Te{sub 5} using impedance, optical reflection, XRD, DSc and Piezo response Force Microscopy techniques. The temperature dependence of the capacitance in both materials shows an abrupt change at the temperature corresponding to ferroelectric-paraelectric transition and the Curie-Weiss dependence. In Ge{sub 2}Sb{sub 2}Te{sub 5} films this transition corresponds to the end from a NaCl-type to a hexagonal transformation. Piezo response Force Microscopy measurements found ferroelectric domains with dimension approximately equal to the dimension of grains. (Author)

  5. CdTe and Cd sub 1 sub - sub x Zn sub x Te for nuclear detectors: facts and fictions

    CERN Document Server

    Fougeres, P; Hageali, M; Koebel, J M; Regal, R

    1999-01-01

    Both CdTe and Cd sub 1 sub - sub x Zn sub x Te (CZT) can be considered from their physical properties as very good materials for room temperature X- and gamma-rays detection. However, despite years of intense material research, no significant advance has been made to help one to choose between both semiconductors. This paper reviews a few facts about CdTe and CZT to attempt to draw a real comparison between both. THM-CdTe and HPB-CZT have been grown and characterized in Strasbourg. Crystal growth, alloying effects, transport properties and defects are reviewed on the basis of our results and the published ones. The results show that it is still very difficult to claim which one is the best.

  6. Coulomb excitation of $^{116}$Te and $^{118}$Te: a study of collectivity above the Z = 50 shell gap

    CERN Multimedia

    Cederkall, J A; Smith, J F; Voulot, D; Rahkila, P J; Darby, I G; Hadinia, B; Grahn, T; Paul, E S; Wadsworth, R; Bree, N C F; Baeck, T M; Julin, R J; Diriken, J V J; Jenkins, D G; Kroell, T; Leske, J; Huyse, M L

    We propose to study the nature and collectivity of low-energy excitations in $^{116}$Te and $^{118}$Te. We aim to measure the transition probability of the 0$^{+}$ $\\rightarrow$ 2$^{+}$ transition by means of Coulomb excitation, employing REX-ISOLDE and MINIBALL. The proposed study probes the systematics of B(E2) values in light Te nuclei, which lie in a region of the nuclear chart where unusual phenomena and evolution of collectivity have been observed. The proposed study will shed light on the role of the residual proton-neutron interactions in the development of collectivity when approaching the N = Z line. This is a resubmission of the P-277 proposal. The suggestions of INTC have been taken into account and the data from the Yale $^{120}$Te study has been included.

  7. Determination of a natural valence-band offset - The case of HgTe and CdTe

    Science.gov (United States)

    Shih, C. K.; Spicer, W. E.

    1987-01-01

    A method to determine a natural valence-band offset (NVBO), i.e., the change in the valence-band maximum energy which is intrinsic to the bulk band structures of semiconductors is proposed. The HgTe-CdTe system is used as an example in which it is found that the valence-band maximum of HgTe lies 0.35 + or - 0.06 eV above that of CdTe. The NVBO of 0.35 eV is in good agreement with the X-ray photoemission spectroscopy measurement of the heterojunction offset. The procedure to determine the NVBO between semiconductors, and its implication on the heterojunction band lineup and the electronic structures of semiconductor alloys, are discussed.

  8. Superparamagnetism in CuFeInTe{sub 3} and CuFeGaTe{sub 3} alloys

    Energy Technology Data Exchange (ETDEWEB)

    Grima-Gallardo, P.; Alvarado, F.; Munoz, M.; Duran, S.; Quintero, M.; Nieves, L.; Quintero, E.; Tovar, R.; Morocoima, M. [Centro de Estudios en Semiconductores (CES), Fac. Ciencias, Dpto. Fisica, Universidad de Los Andes, Merida (Venezuela); Ramos, M.A. [Laboratorio de Difraccion y Fluorescencia de Rayos-X, Instituto Zuliano de Investigaciones Tecnologicas (INZIT), La Canada de Urdaneta, Estado Zulia (Venezuela)

    2012-06-15

    The temperature dependencies of DC magnetic susceptibilities, {chi}(T), of CuFeInTe{sub 3} and CuFeGaTe{sub 3} alloys were measured in a SQUID apparatus using the protocol of field cooling (FC) and zero FC (ZFC). The FC curves of both samples reflect a weak ferromagnetic (or ferrimagnetic) behavior with a nearly constant value of {chi}(T) in the measured temperature range (2-300 K) indicating that the critical temperatures (T{sub c}) are >300 K. The ZFC curves diverges from FC, showing irreversibility temperatures (T{sub irr}) of {proportional_to}250 K for CuFeInTe{sub 3} and >300 K for CuFeGaTe{sub 3}, suggesting that we are dealing with cluster-glass systems in a superparamagnetic state. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  9. Physical properties of Bi doped CdTe thin films grown by CSVT and their influence on the CdS/CdTe solar cells PV-properties

    International Nuclear Information System (INIS)

    Vigil-Galan, O.; Sanchez-Meza, E.; Ruiz, C.M.; Sastre-Hernandez, J.; Morales-Acevedo, A.; Cruz-Gandarilla, F.; Aguilar-Hernandez, J.; Saucedo, E.; Contreras-Puente, G.; Bermudez, V.

    2007-01-01

    The physical properties of Bi doped CdTe films, grown on glass substrates by the Closed Space Transport Vapour (CSVT) method, from different Bi doped CdTe powders are presented. The CdTe:Bi films were characterized using Photoluminescence, Hall effect, X-Ray diffraction, SEM and Photoconductivity measurements. Moreover, CdS/CdTe:Bi solar cells were made and their characteristics like short circuit current density (J sc ), open circuit voltage (V OC ), fill factor (FF) and efficiency (η) were determined. These devices were fabricated from Bi doped CdTe layers deposited on CdS with the same growth conditions than those used for the single CdTe:Bi layers. A correlation between the CdS/CdTe:Bi solar cell characteristics and the physical properties of the Bi doped CdTe thin films are presented and discussed

  10. Live-monitoring of Te inclusions laser-induced thermo-diffusion and annealing in CdZnTe crystals

    International Nuclear Information System (INIS)

    Zappettini, A.; Zambelli, N.; Benassi, G.; Calestani, D.; Pavesi, M.

    2014-01-01

    The presence of Te inclusions is one of the main factors limiting performances of CdZnTe crystals as X-ray detectors. We show that by means of infrared laser radiation it is possible to move and anneal tellurium inclusions exploiting a thermo-diffusion mechanism. The process is studied live during irradiation by means of an optical microscope equipment. Experimental conditions, and, in particular, energy laser fluence, for annealing inclusions of different dimensions are determined.

  11. Live-monitoring of Te inclusions laser-induced thermo-diffusion and annealing in CdZnTe crystals

    Energy Technology Data Exchange (ETDEWEB)

    Zappettini, A.; Zambelli, N.; Benassi, G.; Calestani, D. [Istituto Materiali Elettronica e Magnetismo – Consiglio Nazionale delle Ricerche, Parma (Italy); Pavesi, M. [Istituto Materiali Elettronica e Magnetismo – Consiglio Nazionale delle Ricerche, Parma (Italy); Istituto di Fisica e Scienze della Terra, Università degli Studi di Parma, Parma (Italy)

    2014-06-23

    The presence of Te inclusions is one of the main factors limiting performances of CdZnTe crystals as X-ray detectors. We show that by means of infrared laser radiation it is possible to move and anneal tellurium inclusions exploiting a thermo-diffusion mechanism. The process is studied live during irradiation by means of an optical microscope equipment. Experimental conditions, and, in particular, energy laser fluence, for annealing inclusions of different dimensions are determined.

  12. Giant multiferroic effects in topological GeTe-Sb2Te3 superlattices

    International Nuclear Information System (INIS)

    Tominaga, Junji; Kolobov, Alexander V; Fons, Paul J; Wang, Xiaomin; Saito, Yuta; Nakano, Takashi; Hase, Muneaki; Murakami, Shuichi; Herfort, Jens; Takagaki, Yukihiko

    2015-01-01

    Multiferroics, materials in which both magnetic and electric fields can induce each other, resulting in a magnetoelectric response, have been attracting increasing attention, although the induced magnetic susceptibility and dielectric constant are usually small and have typically been reported for low temperatures. The magnetoelectric response usually depends on d-electrons of transition metals. Here we report that in [(GeTe) 2 (Sb 2 Te 3 ) l ] m superlattice films (where l and m are integers) with topological phase transition, strong magnetoelectric response may be induced at temperatures above room temperature when the external fields are applied normal to the film surface. By ab initio computer simulations, it is revealed that the multiferroic properties are induced due to the breaking of spatial inversion symmetry when the p-electrons of Ge atoms change their bonding geometry from octahedral to tetrahedral. Finally, we demonstrate the existence in such structures of spin memory, which paves the way for a future hybrid device combining nonvolatile phase-change memory and magnetic spin memory. (focus issue paper)

  13. Phonon Drag in Thin Films, Cases of Bi2Te3 and ZnTe

    Science.gov (United States)

    Chi, Hang; Uher, Ctirad

    2014-03-01

    At low temperatures, in (semi-)conductors subjected to a thermal gradient, charge carriers (electrons and holes) are swept (dragged) by out-of-equilibrium phonons due to strong electron-phonon interaction, giving rise to a large contribution to the Seebeck coefficient called the phonon-drag effect. Such phenomenon was surprisingly observed in our recent transport study of highly mismatched alloys as potential thermoelectric materials: a significant phonon-drag thermopower reaching 1.5-2.5 mV/K was recorded for the first time in nitrogen-doped ZnTe epitaxial layers on GaAs (100). In thin films of Bi2Te3, we demonstrate a spectacular influence of substrate phonons on charge carriers. We show that one can control and tune the position and magnitude of the phonon-drag peak over a wide range of temperatures by depositing thin films on substrates with vastly different Debye temperatures. Our experiments also provide a way to study the nature of the phonon spectrum in thin films, which is rarely probed but clearly important for a complete understanding of thin film properties and the interplay of the substrate and films. This work is supported by the Center for Solar and Thermal Energy Conversion, an Energy Frontier Research Center funded by the U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences under Award Number DE-SC0000957.

  14. Elementary design of a 30 TeV on 30 TeV proton antiproton collider

    International Nuclear Information System (INIS)

    Kondo, Takahiko

    1984-01-01

    A crude conceptual design was made for a 30TeV on 30TeV antiproton-proton collider. The choice of energy and antiproton-proton (instead of PP) are somewhat arbitrary. The basic parameters of the main ring are listed in a table; the bending radius, ring radius and circumference are 11.1km, 14.4km, and 90.6km, respectively; 7680 dipole magnets with maximum field of 9 Tesla; 1280 quadrupole magnets with maximum gradient of 200Tesla/m. The development of high-field, low-heat loss dipoles and quadrupoles are essential, together with the consideration for their mass production method. On the other hand, the possibility of obtaining antiproton-proton luminosity exceeding 10 32 /cm 2 sec is suggested without any fundamental limitation. With such high luminosity, however, it should be pointed out that particle detectors must face their limitation due to extremely high rate, high multiplicity interaction, requiring large steps of detector research and development efforts. (Aoki, K.)

  15. Identification of Ag-acceptors in $^{111}Ag^{111}Cd$ doped ZnTe and CdTe

    CERN Document Server

    Hamann, J; Deicher, M; Filz, T; Lany, S; Ostheimer, V; Strasser, F; Wolf, H; Wichert, T

    2000-01-01

    Nominally undoped ZnTe and CdTe crystals were implanted with radioactive /sup 111/Ag, which decays to /sup 111/Cd, and investigated by photoluminescence spectroscopy (PL). In ZnTe, the PL lines caused by an acceptor level at 121 meV are observed: the principal bound exciton (PBE) line, the donor-acceptor pair (DAP) band, and the two-hole transition lines. In CdTe, the PBE line and the DAP band that correspond to an acceptor level at 108 meV appear. Since the intensities of all these PL lines decrease in good agreement with the half-life of /sup 111/Ag of 178.8 h, both acceptor levels are concluded to be associated with defects containing a single Ag atom. Therefore, the earlier assignments to substitutional Ag on Zn- and Cd-lattice sites in the respective II-VI semiconductors are confirmed. The assignments in the literature of the S/sub 1/, S /sub 2/, and S/sub 3/ lines in ZnTe and the X/sub 1//sup Ag/, X/sub 2 //sup Ag//C/sub 1//sup Ag/, and C/sub 2//sup Ag/ lines in CdTe to Ag- related defect complexes are ...

  16. Comparative study of CdTe sources used for deposition of CdTe thin films by close spaced sublimation technique

    Directory of Open Access Journals (Sweden)

    Wagner Anacleto Pinheiro

    2006-03-01

    Full Text Available Unlike other thin film deposition techniques, close spaced sublimation (CSS requires a short source-substrate distance. The kind of source used in this technique strongly affects the control of the deposition parameters, especially the deposition rate. When depositing CdTe thin films by CSS, the most common CdTe sources are: single-crystal or polycrystalline wafers, powders, pellets or pieces, a thick CdTe film deposited onto glass or molybdenum substrate (CdTe source-plate and a sintered CdTe powder. In this work, CdTe thin films were deposited by CSS technique from different CdTe sources: particles, powder, compact powder, a paste made of CdTe and propylene glycol and source-plates (CdTe/Mo and CdTe/glass. The largest deposition rate was achieved when a paste made of CdTe and propylene glycol was used as the source. CdTe source-plates led to lower rates, probably due to the poor heat transmission, caused by the introduction of the plate substrate. The results also showed that compacting the powder the deposition rate increases due to the better thermal contact between powder particles.

  17. Deposition of polycrystalline Cd{sub 1-x}Zn{sub x} Te films on ZnTe/graphite and graphite substrates by close-spaced sublimation

    Energy Technology Data Exchange (ETDEWEB)

    Okamoto, Tamotsu; Akiba, Sho; Takahashi, Kohei; Nagatsuka, Satsuki; Kanda, Yohei [Department of Electrical and Electronic Engineering, Kisarazu National College of Technology, 2-11-1 Kiyomidai-higashi, Kisarazu, Chiba 292-0041 (Japan); Tokuda, Satoshi; Kishihara, Hiroyuki; Sato, Toshiyuki [Technology Research Laboratory, Shimadzu Corporation, 3-9-4 Hikaridai, Seika-cho, Soraku-gun, Kyoto 619-0237 (Japan)

    2014-07-15

    The effects of a ZnTe layer on the deposition of a Cd{sub 1-x}Zn{sub x}Te (CZT) layer in the initial stage of the close-spaced sublimation (CSS) deposition were investigated. The deposition rate was almost constant in the initial stage of the CdTe deposition on the ZnTe/graphite substrates. However, the deposition rate within 1 minute was lower than that after 1 minute in the CdTe deposition on graphite substrates. This result suggests that nucleation of CdTe directly deposited on graphite substrate is difficult when compared to that with a ZnTe layer. Furthermore, the effects of CdCl{sub 2} and ZnTe additions to the CdTe sources in the CSS deposition were also investigated. Both the grain size and the intensity of donor-acceptor pair (DAP) emission in photoluminescence (PL) spectra were decreased by the effect of CdCl{sub 2} addition. Zn content in CZT films was controlled by the ZnTe ratio in the CdTe/ZnTe powder sources. (copyright 2014 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  18. Penderecki: Konzert für Flöte und Kammerorchester; Eespere: Konzert für Flöte und Kammerorchester / Gero Schliess

    Index Scriptorium Estoniae

    Schliess, Gero

    1997-01-01

    Uuest heliplaadist "Penderecki: Konzert für Flöte und Kammerorchester; Eespere: Konzert für Flöte und Kammerorchester; Bartok: Suite paysanne hongroise für Flöte und Streichorchester. Estonian National Symphony Orchestra / Arvo Volmer". Signum/Note 1 CD X72-00 (WD:54'30")DDD

  19. Structural and electric properties of AgGaTe{sub 2} layers prepared using mixed source of Ag{sub 2}Te and Ga{sub 2}Te{sub 3}

    Energy Technology Data Exchange (ETDEWEB)

    Uruno, Aya [Department of Electrical Engineering and Bioscience, Waseda University, Tokyo (Japan); Kobayashi, Masakazu [Department of Electrical Engineering and Bioscience, Waseda University, Tokyo (Japan); Kagami Memorial Research Institute for Materials Science and Technology, Waseda University, Tokyo (Japan)

    2017-01-15

    AgGaTe{sub 2} layers were prepared on Si substrates by a closed space sublimation method using a mixed powder source of Ag{sub 2}Te and Ga{sub 2}Te{sub 3}. Ag{sub 2}Te buffer layer deposition was introduced to eliminate melt-back etching. The effect of the molar ratio of Ag{sub 2}Te and Ga{sub 2}Te{sub 3} in the mixed source on the crystallinity of the AgGaTe{sub 2} layer was investigated. The composition and the phase of the layer was found to change depending on the molar ratio in the deposits, which could be controlled by the source molar ratio along with the Ag{sub 2}Te buffer layer thickness. It was confirmed that (112) oriented uniform AgGaTe{sub 2} layer with an abrupt interface between AgGaTe{sub 2} and Si was formed after those parameters were tuned. The obtained layer exhibited the acceptor concentration of around 2.5 x 10{sup 16} cm{sup -3}. A solar cell was fabricated using the p-AgGaTe{sub 2}/n-Si heterojunction, and exhibited a conversion efficiency of 1.15%. (copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  20. Strain-engineering of the topological insulator HgTe

    Energy Technology Data Exchange (ETDEWEB)

    Leubner, Philipp

    2017-07-24

    The subject of this thesis is the control of strain in HgTe thin-film crystals. A major task was the experimental control of the strain in the HgTe films. This was achieved by a new epitaxial approach and confirmed by cristallographic analysis and magneto-transport measurements. In this work, strain was induced in thin films by means of coherent epitaxy on substrate crystals. In principle, compressive strain can be achieved by using an appropriate Cd{sub 1-x}Zn{sub x}Te substrate. This concept was modified and applied in this work. Epilayers have been fabricated by molecular-beam epitaxy (MBE). The growth of thick buffer layers of CdTe on GaAs:Si was established as an alternative to commercial CdTe and Cd{sub 0.96}Zn{sub 0.04}Te substrates. Residual strain was found in the buffer layers, and was attributed to a combination of finite layer thickness and mismatch of the thermal expansion coefficients of CdTe and GaAs. CdTe-Cd{sub 0.5}Zn{sub 0.5}Te strained-layer-superlattices have been grown by a combination of MBE and atomic-layer epitaxy (ALE), and have been analyzed by HRXRD. The crystal quality has been found to degrade with increasing Zn-fraction. HgTe quantum wells (QWs) sandwiched in between CdHgTe barriers have been fabricated in a similar fashion on superlattices and conventional CdTe and Cd{sub 0.96}Zn{sub 0.04}Te substrates. We have determined the QW thickness with an accuracy of ±0.5 nm by an analysis of the beating patterns in the thickness fringes of HRXRD measurements and X-ray reflectometry measurements. We have, for the first time, induced compressive strain in HgTe QWs by an epitaxial technique (i.e. the effective lattice constant of the superlattice is lower compared to the lattice constant of HgTe). The problem of the lattice mismatch between superlattice and barriers has been circumvented by using CdHgTe-ZnHgTe superlattices instead of CdHgTe as a barrier material. Furthermore, the growth of compressively strained HgTe bulk layers (with a

  1. Strain-engineering of the topological insulator HgTe

    International Nuclear Information System (INIS)

    Leubner, Philipp

    2017-01-01

    The subject of this thesis is the control of strain in HgTe thin-film crystals. A major task was the experimental control of the strain in the HgTe films. This was achieved by a new epitaxial approach and confirmed by cristallographic analysis and magneto-transport measurements. In this work, strain was induced in thin films by means of coherent epitaxy on substrate crystals. In principle, compressive strain can be achieved by using an appropriate Cd 1-x Zn x Te substrate. This concept was modified and applied in this work. Epilayers have been fabricated by molecular-beam epitaxy (MBE). The growth of thick buffer layers of CdTe on GaAs:Si was established as an alternative to commercial CdTe and Cd 0.96 Zn 0.04 Te substrates. Residual strain was found in the buffer layers, and was attributed to a combination of finite layer thickness and mismatch of the thermal expansion coefficients of CdTe and GaAs. CdTe-Cd 0.5 Zn 0.5 Te strained-layer-superlattices have been grown by a combination of MBE and atomic-layer epitaxy (ALE), and have been analyzed by HRXRD. The crystal quality has been found to degrade with increasing Zn-fraction. HgTe quantum wells (QWs) sandwiched in between CdHgTe barriers have been fabricated in a similar fashion on superlattices and conventional CdTe and Cd 0.96 Zn 0.04 Te substrates. We have determined the QW thickness with an accuracy of ±0.5 nm by an analysis of the beating patterns in the thickness fringes of HRXRD measurements and X-ray reflectometry measurements. We have, for the first time, induced compressive strain in HgTe QWs by an epitaxial technique (i.e. the effective lattice constant of the superlattice is lower compared to the lattice constant of HgTe). The problem of the lattice mismatch between superlattice and barriers has been circumvented by using CdHgTe-ZnHgTe superlattices instead of CdHgTe as a barrier material. Furthermore, the growth of compressively strained HgTe bulk layers (with a thickness of at least 50 nm) was

  2. A computational study on the energy bandgap engineering in performance enhancement of CdTe thin film solar cells

    Directory of Open Access Journals (Sweden)

    Ameen M. Ali

    Full Text Available In this study, photovoltaic properties of CdTe thin film in the configuration of n-SnO2/n-CdS/p-CdTe/p-CdTe:Te/metal have been studied by numerical simulation software named “Analysis of Microelectronic and Photonic Structure” (AMPS-1D. A modified structure for CdTe thin film solar cell has been proposed by numerical analysis with the insertion of a back contact buffer layer (CdTe:Te. This layer can serve as a barrier that will decelerate the copper diffusion in CdTe solar cell. Four estimated energy bandgap relations versus the Tellurium (Te concentrations and the (CdTe:Te layer thickness have been examined thoroughly during simulation. Correlation between energy bandgap with the CdTe thin film solar cell performance has also been established. Keywords: Numerical modelling, CdTe thin film, Solar cell, AMPS-1D, Bandgap

  3. Vibrational properties of epitaxial Bi4Te3 films as studied by Raman spectroscopy

    Directory of Open Access Journals (Sweden)

    Hao Xu

    2015-08-01

    Full Text Available Bi4Te3, as one of the phases of the binary Bi–Te system, shares many similarities with Bi2Te3, which is known as a topological insulator and thermoelectric material. We report the micro-Raman spectroscopy study of 50 nm Bi4Te3 films on Si substrates prepared by molecular beam epitaxy. Raman spectra of Bi4Te3 films completely resolve the six predicted Raman-active phonon modes for the first time. Structural features and Raman tensors of Bi4Te3 films are introduced. According to the wavenumbers and assignments of the six eigenpeaks in the Raman spectra of Bi4Te3 films, it is found that the Raman-active phonon oscillations in Bi4Te3 films exhibit the vibrational properties of those in both Bi and Bi2Te3 films.

  4. Elastic and transport properties of topological semimetal ZrTe

    Science.gov (United States)

    Guo, San-Dong; Wang, Yue-Hua; Lu, Wan-Li

    2017-11-01

    Topological semimetals may have substantial applications in electronics, spintronics, and quantum computation. Recently, ZrTe was predicted as a new type of topological semimetal due to the coexistence of Weyl fermions and massless triply degenerate nodal points. In this work, the elastic and transport properties of ZrTe are investigated by combining the first-principles calculations and semiclassical Boltzmann transport theory. Calculated elastic constants prove the mechanical stability of ZrTe, and the bulk modulus, shear modulus, Young’s modulus, and Poisson’s ratio also are calculated. It is found that spin-orbit coupling (SOC) has slightly enhanced effects on the Seebeck coefficient, which along the a(b) and c directions for pristine ZrTe at 300 K is 46.26 μVK-1 and 80.20 μVK-1, respectively. By comparing the experimental electrical conductivity of ZrTe (300 K) with the calculated value, the scattering time is determined as 1.59 × 10-14 s. The predicted room-temperature electronic thermal conductivity along the a(b) and c directions is 2.37 {{Wm}}-1{{{K}}}-1 and 2.90 {{Wm}}-1{{{K}}}-1, respectively. The room-temperature lattice thermal conductivity is predicted as 17.56 {{Wm}}-1{{{K}}}-1 and 43.08 {{Wm}}-1{{{K}}}-1 along the a(b) and c directions, showing very strong anisotropy. Calculated results show that isotope scattering produces an observable effect on lattice thermal conductivity. To observably reduce lattice thermal conductivity by nanostructures, the characteristic length should be smaller than 70 nm, based on cumulative lattice thermal conductivity with respect to the phonon mean free path (MFP) at 300 K. It is noted that the average room-temperature lattice thermal conductivity of ZrTe is slightly higher than that of isostructural MoP, which is due to larger phonon lifetimes and smaller Grüneisen parameters. Finally, the total thermal conductivity as a function of temperature is predicted for pristine ZrTe. Our works provide valuable

  5. Diffusion of Cd and Te adatoms on CdTe(111) surfaces: A computational study using density functional theory

    Energy Technology Data Exchange (ETDEWEB)

    Naderi, Ebadollah, E-mail: enaderi42@gmail.com [Department of Physics, Savitribai Phule Pune University (SPPU), Pune-411007 (India); Nanavati, Sachin [Center for Development of Advanced Computing (C-DAC), SPPU campus, Pune 411007 (India); Majumder, Chiranjib [Chemistry Division, Bhabha Atomic Research Center, Mumbai, 400085 (India); Ghaisas, S. V. [Department of Electronic Science, Savitribai Phule Pune University (SPPU), Pune-411007 (India); Department of Physics, Savitribai Phule Pune University (SPPU), Pune-411007 (India)

    2015-01-15

    CdTe is one of the most promising semiconductor for thin-film based solar cells. Here we report a computational study of Cd and Te adatom diffusion on the CdTe (111) A-type (Cd terminated) and B-type (Te terminated) surfaces and their migration paths. The atomic and electronic structure calculations are performed under the DFT formalism and climbing Nudge Elastic Band (cNEB) method has been applied to evaluate the potential barrier of the Te and Cd diffusion. In general the minimum energy site on the surface is labeled as A{sub a} site. In case of Te and Cd on B-type surface, the sub-surface site (a site just below the top surface) is very close in energy to the A site. This is responsible for the subsurface accumulation of adatoms and therefore, expected to influence the defect formation during growth. The diffusion process of adatoms is considered from A{sub a} (occupied) to A{sub a} (empty) site at the nearest distance. We have explored three possible migration paths for the adatom diffusion. The adatom surface interaction is highly dependent on the type of the surface. Typically, Te interaction with both type (5.2 eV for A-type and 3.8 eV for B-type) is stronger than Cd interactions(2.4 eV for B-type and 0.39 eV for A-type). Cd interaction with the A-type surface is very weak. The distinct behavior of the A-type and B-type surfaces perceived in our study explain the need of maintaining the A-type surface during growth for smooth and stoichiometric growth.

  6. Diffusion of Cd and Te adatoms on CdTe(111) surfaces: A computational study using density functional theory

    Science.gov (United States)

    Naderi, Ebadollah; Nanavati, Sachin; Majumder, Chiranjib; Ghaisas, S. V.

    2015-01-01

    CdTe is one of the most promising semiconductor for thin-film based solar cells. Here we report a computational study of Cd and Te adatom diffusion on the CdTe (111) A-type (Cd terminated) and B-type (Te terminated) surfaces and their migration paths. The atomic and electronic structure calculations are performed under the DFT formalism and climbing Nudge Elastic Band (cNEB) method has been applied to evaluate the potential barrier of the Te and Cd diffusion. In general the minimum energy site on the surface is labeled as Aa site. In case of Te and Cd on B-type surface, the sub-surface site (a site just below the top surface) is very close in energy to the A site. This is responsible for the subsurface accumulation of adatoms and therefore, expected to influence the defect formation during growth. The diffusion process of adatoms is considered from Aa (occupied) to Aa (empty) site at the nearest distance. We have explored three possible migration paths for the adatom diffusion. The adatom surface interaction is highly dependent on the type of the surface. Typically, Te interaction with both type (5.2 eV for A-type and 3.8 eV for B-type) is stronger than Cd interactions(2.4 eV for B-type and 0.39 eV for A-type). Cd interaction with the A-type surface is very weak. The distinct behavior of the A-type and B-type surfaces perceived in our study explain the need of maintaining the A-type surface during growth for smooth and stoichiometric growth.

  7. Diffusion of Cd and Te adatoms on CdTe(111) surfaces: A computational study using density functional theory

    International Nuclear Information System (INIS)

    Naderi, Ebadollah; Nanavati, Sachin; Majumder, Chiranjib; Ghaisas, S. V.

    2015-01-01

    CdTe is one of the most promising semiconductor for thin-film based solar cells. Here we report a computational study of Cd and Te adatom diffusion on the CdTe (111) A-type (Cd terminated) and B-type (Te terminated) surfaces and their migration paths. The atomic and electronic structure calculations are performed under the DFT formalism and climbing Nudge Elastic Band (cNEB) method has been applied to evaluate the potential barrier of the Te and Cd diffusion. In general the minimum energy site on the surface is labeled as A a site. In case of Te and Cd on B-type surface, the sub-surface site (a site just below the top surface) is very close in energy to the A site. This is responsible for the subsurface accumulation of adatoms and therefore, expected to influence the defect formation during growth. The diffusion process of adatoms is considered from A a (occupied) to A a (empty) site at the nearest distance. We have explored three possible migration paths for the adatom diffusion. The adatom surface interaction is highly dependent on the type of the surface. Typically, Te interaction with both type (5.2 eV for A-type and 3.8 eV for B-type) is stronger than Cd interactions(2.4 eV for B-type and 0.39 eV for A-type). Cd interaction with the A-type surface is very weak. The distinct behavior of the A-type and B-type surfaces perceived in our study explain the need of maintaining the A-type surface during growth for smooth and stoichiometric growth

  8. Electrical properties of CdS/CdTe heterojunctions

    International Nuclear Information System (INIS)

    Chu, T.L.; Chu, S.S.; Ang, S.T.

    1988-01-01

    The electrical properties of n-CdS/p-CdTe heterojunctions depend strongly on the cleanliness of the interface region. In this work, CdTe films were deposited on CdS/glass substrates by close-spaced sublimation (CSS) under various conditions. The dark current-voltage characteristics of the resulting heterojunctions were measured over a wide temperature range, and the capacitance-voltage characteristics were measured in the dark and under illumination. When the CdS surface is in situ cleaned prior to the deposition of the CdTe film, the current transport across the junction is controlled by a thermally activated process. Tunneling makes an important contribution to the interface recombination at temperatures below room temperature when the in situ cleaning of CdS is not used. The dark capacitance of CdS/CdTe heterojunctions prepared with in situ etching is essentially independent of the reverse bias due to intrinsic interface states. Under white light illumination, the 1/C 2 vs V relation is nearly linear. The CdS/CdTe heterojunctions without in situ cleaning showed different 1/C 2 vs V relations due to higher density of interface states. The in situ cleaning also has pronounced effects on the frequency dependence of dark and illuminated capacitances. Using the in situ cleaning technique, solar cells of about 1 cm 2 area have achieved an AM 1.5 (global) efficiency of about 10.5%

  9. Electromagnetic cloaking devices for TE and TM polarizations

    International Nuclear Information System (INIS)

    Bilotti, Filiberto; Tricarico, Simone; Vegni, Lucio

    2008-01-01

    In this paper, we present the design of an electromagnetic cloaking device working for both transverse electric (TE) and transverse magnetic (TM) polarizations. The theoretical approach to cloaking used here is inspired by the one presented by Alu and Engheta (2005 Phys. Rev. E 72 016623) for TM polarization. The case of TE polarization is firstly considered and, then, an actual inclusion-based cloak for TE polarization is also designed. In such a case, the cloak is made of a mu-near-zero (MNZ) metamaterial, as the dual counterpart of the epsilon-near-zero (ENZ) material that can be used for purely dielectric objects. The operation and the robustness of the cloaking device for the TE polarization is deeply investigated through a complete set of full-wave numerical simulations. Finally, the design and an application of a cloak operating for both TE and TM polarizations employing both magnetic inclusions and the parallel plate medium already used by Silveirinha et al (Phys. Rev. E 75 036603) are presented.

  10. Electronic bandstructure of the ZnTe absorber material

    Energy Technology Data Exchange (ETDEWEB)

    Fritsch, Daniel [Leibniz Institute for Solid State and Materials Research IFW Dresden (Germany); Schmidt, Heidemarie [Forschungszentrum Dresden-Rossendorf, Dresden (Germany)

    2009-07-01

    Due to its large absorption coefficient, zinc telluride proved to be useful for the production of high-efficiency multi-junction solar cells. Nowadays ZnTe with a mixture of zincblende and wurtzite phases is fabricated by thin film growth techniques. The optical properties of both phases have been extensively studied by ab initio density functional methods. Here we focus on the question whether the effective electron and hole mass in ZnTe are small enough to meet the high-efficiency expectation of the ZnTe absorber material in solar cells and present direction dependent effective mass and Luttinger and Luttinger-like parameters of cubic and wurtzite ZnTe, respectively. Making use of the transferability of ionic model potential parameters and the experimentally known transition energies of different II-VI compounds ZnX (X=O,S,Se,Te), we obtained one single set of cationic model parameters for the Zn atom. The calculations have been performed by means of the empirical pseudopotential method using a simple empty core model potential.

  11. Forming mechanism of Te-based conductive-bridge memories

    Science.gov (United States)

    Mendes, M. Kazar; Martinez, E.; Marty, A.; Veillerot, M.; Yamashita, Y.; Gassilloud, R.; Bernard, M.; Renault, O.; Barrett, N.

    2018-02-01

    We investigated origins of the resistivity change during the forming of ZrTe/Al2O3 based conductive-bridge resistive random access memories. Non-destructive hard X-ray photoelectron spectroscopy was used to investigate redox processes with sufficient depth sensitivity. Results highlighted the reduction of alumina correlated to the oxidation of zirconium at the interface between the solid electrolyte and the active electrode. In addition the resistance switching caused a decrease of Zr-Te bonds and an increase of elemental Te showing an enrichment of tellurium at the ZrTe/Al2O3 interface. XPS depth profiling using argon clusters ion beam confirmed the oxygen diffusion towards the top electrode. A four-layer capacitor model showed an increase of both the ZrO2 and AlOx interfacial layers, confirming the redox process located at the ZrTe/Al2O3 interface. Oxygen vacancies created in the alumina help the filament formation by acting as preferential conductive paths. This study provides a first direct evidence of the physico-chemical phenomena involved in resistive switching of such devices.

  12. A facile route to shape controlled CdTe nanoparticles

    Energy Technology Data Exchange (ETDEWEB)

    Mntungwa, Nhlakanipho; Rajasekhar, Pullabhotla V.S.R. [Department of Chemistry, University of Zululand, Private Bag X1001, KwaDlangezwa 3886, Empangeni, KZN (South Africa); Revaprasadu, Neerish, E-mail: nrevapra@pan.uzulu.ac.za [Department of Chemistry, University of Zululand, Private Bag X1001, KwaDlangezwa 3886, Empangeni, KZN (South Africa)

    2011-04-15

    Research highlights: {yields} A facile hybrid solution based/thermolysis route has been used for the synthesis of hexadecylamine capped CdTe nanoparticles. {yields} This method involves the reaction by the addition of an aqueous suspension of a cadmium salt to a freshly prepared NaHTe solution. {yields} The cadmium salt plays an important role in the growth mechanism of the particles and hence its final morphology. - Abstract: Hexadecylamine (HDA) capped CdTe nanoparticles have been synthesized using a facile hybrid solution based/thermolysis route. This method involves the reaction by the addition of an aqueous suspension or solution of a cadmium salt (chloride, acetate, nitrate or carbonate) to a freshly prepared NaHTe solution. The isolated CdTe was then dispersed in tri-octylphosphine (TOP) and injected into pre-heated HDA at temperatures of 190, 230 and 270 deg. C for 2 h. The particle growth and size distribution of the CdTe particles synthesized using cadmium chloride as the cadmium source were monitored using absorption and photoluminescence spectroscopy. The final morphology of the CdTe nanoparticles synthesized from the various cadmium sources was studied by transmission electron microscopy (TEM) and high resolution TEM. The cadmium source has an influence on the final morphology of the particles.

  13. A facile route to shape controlled CdTe nanoparticles

    International Nuclear Information System (INIS)

    Mntungwa, Nhlakanipho; Rajasekhar, Pullabhotla V.S.R.; Revaprasadu, Neerish

    2011-01-01

    Research highlights: → A facile hybrid solution based/thermolysis route has been used for the synthesis of hexadecylamine capped CdTe nanoparticles. → This method involves the reaction by the addition of an aqueous suspension of a cadmium salt to a freshly prepared NaHTe solution. → The cadmium salt plays an important role in the growth mechanism of the particles and hence its final morphology. - Abstract: Hexadecylamine (HDA) capped CdTe nanoparticles have been synthesized using a facile hybrid solution based/thermolysis route. This method involves the reaction by the addition of an aqueous suspension or solution of a cadmium salt (chloride, acetate, nitrate or carbonate) to a freshly prepared NaHTe solution. The isolated CdTe was then dispersed in tri-octylphosphine (TOP) and injected into pre-heated HDA at temperatures of 190, 230 and 270 deg. C for 2 h. The particle growth and size distribution of the CdTe particles synthesized using cadmium chloride as the cadmium source were monitored using absorption and photoluminescence spectroscopy. The final morphology of the CdTe nanoparticles synthesized from the various cadmium sources was studied by transmission electron microscopy (TEM) and high resolution TEM. The cadmium source has an influence on the final morphology of the particles.

  14. Pressure induced anomalies in an As-Al-Te glass

    International Nuclear Information System (INIS)

    Mohan, Murali; Giridhar, A.; Mahadevan, Sudha

    1995-01-01

    The pressure and temperature dependences of the electrical resistance of As 34.4 Al 4 Te 61.6 and As 16.67 Al 16.67 Te 66.66 glasses have been investigated using an opposed anvil setup. The resistance of the glasses exhibit ∼ 10 6 fold decrease with increasing pressure up to 7 GPa at 300 K. This behaviour can be traced to the corresponding changes with pressure of the activation energy for electrical conduction, ΔE(p). The As 34.4 Al 4 Te 61.6 glass exhibits pressure induced anomalies at 2 GPa in the pressure variation of ΔE(p) and the pressure coefficient of electrical resistance. Such an anomaly is not seen for the As 16.67 Al 16.67 Te 66.66 glass. The anomalies point to a pressure induced morphological structural transformation in the As 34.4 Al 4 Te 61.6 glass. (author)

  15. NMR study of CeTe at low temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Hinderer, J. [Laboratorium fuer Festkoerperphysik, ETH Zuerich, CH-8093 Zurich (Switzerland)]. E-mail: hinderer@phys.ethz.ch; Weyeneth, S.M. [Laboratorium fuer Festkoerperphysik, ETH Zuerich, CH-8093 Zurich (Switzerland); Weller, M. [Laboratorium fuer Festkoerperphysik, ETH Zuerich, CH-8093 Zurich (Switzerland); Gavilano, J.L. [Laboratorium fuer Festkoerperphysik, ETH Zuerich, CH-8093 Zurich (Switzerland); Felder, E. [Laboratorium fuer Festkoerperphysik, ETH Zuerich, CH-8093 Zurich (Switzerland); Hulliger, F. [Laboratorium fuer Festkoerperphysik, ETH Zuerich, CH-8093 Zurich (Switzerland); Ott, H.R. [Laboratorium fuer Festkoerperphysik, ETH Zuerich, CH-8093 Zurich (Switzerland)

    2006-05-01

    We present {sup 125}Te NMR measurements on CeTe powder at temperatures between 1 and 150K and in magnetic fields between 5 and 8T. CeTe is a rocksalt-type intermetallic compound. It orders antiferromagnetically at T{sub N}{approx}2.2K with a much reduced ordered moment [H.R. Ott, J.K. Kjems, F. Hulliger, Phys. Rev. Lett. 42 20 (1979) 1378]. From our low-temperature NMR spectra we infer the presence of at least three inequivalent Te sites at low temperatures. Considering the crystal structure this result is completely unexpected. The linewidths and the Knight shifts of the individual lines are significantly different and increase substantially with decreasing temperature. They follow the temperature dependence of the magnetic susceptibility above 20K. Above T{sub N}, hyperfine fields of 1.6, 0.8 and 0.0T at the three Te sites per Bohr magneton of Ce moment are deduced from Knight shift vs. magnetic susceptibility data. These values are typical for transferred hyperfine fields via conduction electrons.

  16. Numerical design and analysis of a compact TE10 to TE01 mode transducer

    International Nuclear Information System (INIS)

    Tantawi, S.; Ko, K.; Kroll, N.

    1993-04-01

    A high-power low-loss mode transducer design has been proposed to adapt the output of the X-Band klystron, WR90 rectangular waveguide, to the input of the pulse compression system, SLED II, which utilizes overmoded circular waveguides operating in the low-loss TE 01 mode. This device is much more compact than the conventional Marie type mode converters. The device splits the incoming klystron output into two separate rectangular guides that are then fed into a circular guide through a four-slot arrangement. We will use both MAFIA and HFSS to calculate the transmission properties of the three-dimensional structure. We will also determine the extent of mode contamination and compare the numerical results with experiments

  17. Characterization of CdTe and (CdZn)Te detectors with different metal contacts

    Science.gov (United States)

    Pekárek, J.; Belas, E.; Grill, R.; Uxa, Å.; James, R. B.

    2013-09-01

    In the present work we studied an influence of different types of surface etching and surface passivation of high resistivity CdZnTe-based semiconductor detector material. The aim was to find the optimal conditions to improve the properties of metal-semiconductor contact. The main effort was to reduce the leakage current and thus get better X-ray and gamma-ray spectrum, i.e. to create a detector operating at room temperature based on this semiconductor material with sufficient energy resolution and the maximum charge collection efficiency. Individual surface treatments were characterized by I-V characteristics, spectral analysis and by determination of the profile of the internal electric field.

  18. Influence of EDTA2− on the hydrothermal synthesis of CdTe nanocrystallites

    International Nuclear Information System (INIS)

    Gong Haibo; Hao Xiaopeng; Wu Yongzhong; Cao Bingqiang; Xu Hongyan; Xu Xiangang

    2011-01-01

    Transformation from Te nanorods to CdTe nanoparticles was achieved with the assistance of EDTA as a ligand under hydrothermal conditions. Experimental results showed that at the beginning of reaction Te nucleated and grew into nanorods. With the proceeding of reaction, CdTe nucleus began to emerge on the surface, especially on the tips of Te nanorods. Finally, nearly monodispersed hexagonal CdTe nanoparticles with diameters of about 200 nm were obtained. The effects of EDTA on the morphology and formation of CdTe nanoparticles were discussed in consideration of the strong ligand-effect of EDTA, which greatly decreased the concentration of Cd 2+ . Furthermore, the possible formation process of CdTe nanoparticles from Te nanorods was further proposed. The crystal structure and morphology of the products were investigated by X-ray diffraction (XRD) and scanning electron microscopy (SEM). - Graphical Abstract: Firstly, Te nucleated and grew into nanorods in the presence of EDTA 2− . Then CdTe nucleus began to emerge on Te nanorods and finally monodispersed CdTe nanoparticles were obtained. Highlights: ► EDTA serves as a strong ligand with Cd 2+ . ► The existence of EDTA constrains the nucleation of CdTe and promotes the formation of Te nanorods. ► With the proceeding of reaction, CdTe nucleus began to emerge on the surface, especially on the tips of Te nanorods. ► Nearly monodispersed hexagonal CdTe nanoparticles with diameters of about 200 nm were finally obtained.

  19. Effect of the value of bond energy on the defect formation in the samples of CdTe - HqTe system under the influence of irradiation

    International Nuclear Information System (INIS)

    Kramchenko, O.A.; Pashkovskij, N.V.

    1984-01-01

    The bonds break energy in solid solutions of the CdTe-HgTe system is calculated. The correctness of the statement that bonds strength in a chemical compound, particularly for the CdTe-HgTe system with decreases with the increase of atomic number. It is shown that in the process of transition from CdTe binary compound to solid solutions of the CdTe-HgTe system a part of Cd atoms is substituted by Hg atoms, which causes relative decrease of the number Cd-Te bonds. At the same time increased is the number of Cd-Te bonds which during irradiation break more probably than the Cd-Te bonds forming however only Frenkel close vapours annihilating during irradiation. During the experiment these defects lead to temperature region washout in which properties reconstruction at isochronous annealing begins. The beginning of annealing is shifted towards higher temperatures which has been observed in the course of investigation. X decrease for the Cdsub(x)Hgsub(1-x)Te solid solution increases the annealing temperature of radiation defects The results of theoretical calculations coincide with the experimental data and permit to confirm that the properties changes arising during irradiation of matters with weak chemical bonds can be conserved only at very low temperatures

  20. Robust half-metallicity at the zincblende CrTe(0 0 1) surfaces and its interface with ZnTe(0 0 1)

    International Nuclear Information System (INIS)

    Ahmadian, F.; Abolhassani, M.R.; Hashemifar, S.J.; Elahi, M.

    2010-01-01

    All electron full potential calculations based on spin density functional theory are performed to study cubic zincblende (ZB) and hexagonal NiAs structures of bulk CrTe, free (0 0 1) surfaces of ZB CrTe, and interface of ZB CrTe with ZnTe(0 0 1). The ferromagnetic NiAs structure is reported to be about 0.26 eV more stable than the ferromagnetic ZB phase while ZB CrTe is found to be a half-metallic ferromagnet with a half-metallic gap of about 2.90 eV. Thermodynamic stability of CrTe(0 0 1) surfaces are studied in the framework of ab-initio thermodynamic. The obtained phase diagram evidences more stability of the Te terminated surface compared with the Cr termination. We discuss that both Te and Cr ideal terminations of CrTe(0 0 1) retain bulk-like half-metallic property but with a reduced half-metallic gap compared with bulk value. The structural, electronic, magnetic, and band alignment properties of the ZB CrTe/ZnTe(0 0 1) interface are computed and a rather large minority valence band offset of about 1.09 eV is observed in this heterojunction.

  1. Analysis of grain boundaries, twin boundaries, and Te precipitates in CdZnTe grown by high-pressure Bridgeman method

    International Nuclear Information System (INIS)

    Heffelfinger, J.R.; Medlin, D.L.; James, R.B.

    1998-03-01

    Grain boundaries and twin boundaries in commercial Cd 1-x Zn x Te, which is prepared by a high pressure Bridgeman technique, have been investigated with transmission electron microscopy, scanning electron microscopy, infrared light microscopy and visible light microscopy. Boundaries inside these materials were found to be decorated with Te precipitates. The shape and local density of the precipitates were found to depend on the particular boundary. For precipitates that decorate grain boundaries, their microstructure was found to consist of a single, saucer shaped grain of hexagonal Te (space group P3 1 21). Analysis of a Te precipitate precipitates by selected area diffraction revealed the Te to be aligned with the surrounding Cd 1-x Zn x Te grains. This alignment was found to match the (111) Cd 1-x Z x Te planes with the (1 bar 101) planes of hexagonal Te. Crystallographic alignments between the Cd 1-x Zn x Te grains were also observed for a high angle grain boundary. The structure of the grain boundaries and the Te/Cd 1-x Zn x Te interface are discussed

  2. A soil moisture and temperature network for SMOS validation in Western Denmark

    DEFF Research Database (Denmark)

    Bircher, Simone; Skou, Niels; Jensen, K. H.

    2011-01-01

    The Soil Moisture and Ocean Salinity Mission (SMOS) acquires surface soil moisture data globally, and thus product validation for a range of climate and environmental conditions across continents is a crucial step. For this purpose, a soil moisture and temperature network of Decagon ECH2O 5TE...... SMOS pixel (44 × 44 km), which is representative of the land surface conditions of the catchment and with minimal impact from open water (2) arrangement of three network clusters along the precipitation gradient, and (3) distribution of the stations according to respective fractions of classes...... representing the prevailing environmental conditions. Overall, measured moisture and temperature patterns could be related to the respective land cover and soil conditions. Texture-dependency of the 0–5 cm soil moisture measurements was demonstrated. Regional differences in 0–5 cm soil moisture, temperature...

  3. Hadron supercolliders: The 1-TeV scale and beyond

    International Nuclear Information System (INIS)

    Quigg, C.

    1990-01-01

    Greater understanding of the connection between the weak and electromagnetic interactions is central to progress in elementary-particle physics. A definitive exploration of the mechanism for electroweak symmetry breaking will require collisions between fundamental constituents at energies on the order of 1 TeV. This goal drives the design of high-energy, high-luminosity hadron colliders that will be commissioned during the next decade, but by no means completely defines their scientific potential. These three lectures are devoted to a review of the standard-model issues that motivated an experimental assault on the 1-TeV scale, an introduction to the machines and the experimental environment they will present, and a survey of possibilities for measurement and discovery with a multi-TeV hadron collider. 72 refs., 29 figs

  4. 2$^{+}$ anomaly and configurational isospin polarization of $^{136}$Te

    CERN Multimedia

    It is proposed to perform a Coulomb excitation experiment on beams of radioactive ions of $^{136}$Te delivered by HIE-ISOLDE impinging on a $^{58}$Ni target. Scattered particles will be detected by a DSSSD detector and $\\gamma$-rays will be detected by the MINIBALL array. The proposed Configurational Isospin Polarization (CIP) of the two lowest 2$^+$ states will be determined by measuring the E2 excitation yield distribution to them. The expected proton-dominated one-phonon character of the second excited 2$^+$ state of $^{136}$Te will be tested on the basis of absolute electromagnetic matrix elements from the observed Coulomb excitation cross sections. Complementary lifetime information on this predominant 2$^+_{1,ms}$ state will be extracted using the differential DSAM technique. The experiment will clarify to what extent CIP is responsible for the 2$^+$ anomaly in $^{136}$Te.

  5. Sado, la cerimònia del te japonesa

    OpenAIRE

    Lluch Garcia, Lídia

    2016-01-01

    La cerimònia del te japonesa, o Sado, és el ritual de la preparació i el servei del te verd japonès, matcha. Influenciada pel budisme zen, és una doctrina que requereix anys d'estudi i pràctica, ja que l'ensenyança d'aquesta cerimònia inclou l'estudi d'altres arts japoneses tals com la cal•ligrafia, o shodo, l'arranjament floral, o ikebana, i l'art del quimono, entre d'altres. Aquest treball explora la història de la cerimònia del te, des dels seus orígens fins a la seva situació actual; així...

  6. Physics at TeV e+e- linear colliders

    International Nuclear Information System (INIS)

    Chanowitz, M.S.

    1992-01-01

    A survey is presented of the physics opportunities at TeV e + e - linear colliders. Examples are given of physics that might emerge in e + e - collisions and in γγ collisions using the back-scattered laser technique, including γγ → ZZ scattering as a probe of ultraheavy quanta. The second portion of the talk focuses on physics that must emerge at or below the TeV scale--the mechanism of electroweak symmetry breaking. In particular a very rough estimate is presented of the most challenging possible signal of symmetry breaking, strong WW scattering, as a function of collider energy. A subtheme, made explicit in the concluding section, is the continuing complementarity of e + e - and pp colliders in the domain of TeV physics

  7. LaBiTe3: An unusual thermoelectric material

    KAUST Repository

    Singh, Nirpendra

    2014-06-18

    Using first-principles calculations and semi-classical Boltzmann transport theory, the thermoelectric properties of LaBiTe3 are studied. The band gap and, hence, the thermoelectric response are found to be easily tailored by application of strain. Independent of the temperature, the figure of merit turns out to be maximal at a doping of about 1.6 × 1021 cm-3. At room temperature we obtain values of 0.4 and 0.5 for unstrained and moderately strained LaBiTe3, which increases to 1.1 and 1.3 at 800 K. A large spin splitting is observed in the conduction band at the T point. Therefore, LaBiTe3 merges characteristics that are interesting for thermoelectric as well as spintronic devices.

  8. TEM assessment of defects in (CdHg)Te heterostructures

    International Nuclear Information System (INIS)

    Lawson-Jack, S.G.; Jones, I.P.; Williams, D.J.; Astles, M.G.

    1991-01-01

    This paper reports on transmission electron microscopy used to assess the defect contents of the various layers and interfaces in (CdHg)Te heterostructures. Examination of cross sectional specimens of these materials suggests that the density of misfit dislocations at the interfaces is related to the layer thicknesses, and that the high density of dislocations which are generated at the GaAs/CdTe interface are effectively prevented from penetrating into the CdHgTe epilayer by a 3 μm thick buffer layer. The majority of the dislocations in the layers were found to have a Burgers vector b = a/2 left-angle 110 right-angle and either lie approximately parallel or inclined at an angle of ∼ 60 degrees to the interfactial plane

  9. Vibrational properties of ZnTe at high pressures

    International Nuclear Information System (INIS)

    Camacho, J.; Loa, I.; Syassen, K.; Cantarero, A.

    2002-01-01

    Raman spectra of ZnTe were measured under hydrostatic pressures up to 15 GPa at T=300 K. Results for the frequencies of first- and second-order Raman features of the zincblende phase (0-9.5 GPa) are used to set up a rigid-ion model of the phonon dispersion relations under pressure. Calculated phonon densities of states, mode Grueneisen parameters and the thermal expansion coefficient as a function of pressure are discussed. The effect of pressure on the widths and intensities of Raman spectral features is considered. Raman spectra of high-pressure phases of ZnTe are reported. These spectra indicate the possible existence of a new phase near 13 GPa, intermediate between the cinnabar and orthorhombic (Cmcm) phases of ZnTe. (author)

  10. Vibrational properties of ZnTe at high pressures

    Energy Technology Data Exchange (ETDEWEB)

    Camacho, J. [Max-Planck-Institut fuer Festkoerperforschung, Stuttgart (Germany) and Instituto de Ciencia de Materiales, Universidad de Valencia, Valencia (Spain)]. E-mail: Juana.Camacho@uv.es; Loa, I.; Syassen, K. [Max-Planck-Institut fuer Festkoerperforschung, Stuttgart (Germany); Cantarero, A. [Instituto de Ciencia de Materiales, Universidad de Valencia, Valencia (Spain)

    2002-02-04

    Raman spectra of ZnTe were measured under hydrostatic pressures up to 15 GPa at T=300 K. Results for the frequencies of first- and second-order Raman features of the zincblende phase (0-9.5 GPa) are used to set up a rigid-ion model of the phonon dispersion relations under pressure. Calculated phonon densities of states, mode Grueneisen parameters and the thermal expansion coefficient as a function of pressure are discussed. The effect of pressure on the widths and intensities of Raman spectral features is considered. Raman spectra of high-pressure phases of ZnTe are reported. These spectra indicate the possible existence of a new phase near 13 GPa, intermediate between the cinnabar and orthorhombic (Cmcm) phases of ZnTe. (author)

  11. TeV Gamma Rays From Galactic Center Pulsars

    Energy Technology Data Exchange (ETDEWEB)

    Hooper, Dan [Fermilab; Cholis, Ilias [Johns Hopkins U.; Linden, Tim [Ohio State U., CCAPP

    2017-05-25

    Measurements of the nearby pulsars Geminga and B0656+14 by the HAWC and Milagro telescopes have revealed the presence of bright TeV-emitting halos surrounding these objects. If young and middle-aged pulsars near the Galactic Center transfer a similar fraction of their energy into TeV photons, then these sources could dominate the emission that is observed by HESS and other ground-based telescopes from the innermost ~10^2 parsecs of the Milky Way. In particular, both the spectral shape and the angular extent of this emission is consistent with TeV halos produced by a population of pulsars. The overall flux of this emission requires a birth rate of ~100-1000 neutron stars per Myr near the Galactic Center, in good agreement with recent estimates.

  12. Myocardial imaging with 9-[Te-123m]tellurapheptadecanoic acid

    International Nuclear Information System (INIS)

    Elmaleh, D.R.; Knapp, F.F.; Yasuda, T.; Coffey, J.L.; Kopiwoda, S.; Okada, R.; Strauss, W.H.

    1981-01-01

    The distribution of radioactivity in the myocardium of rats and dogs infarcted by ligation of the left anterior coronary artery has been determined after intravenous injection of 9-[Te-123m]telluraheptadecanoic acid (Te-123m HDA). In rats the normal myocardium concentrated radioactivity (3.7% +/- 0.28 injected dose/g) to nearly three times that in the zones of infarction (1.12% +/- 0.18 dose/g). The focal defects detected in the gamma-camera images of rats and dogs correspond well with areas of infarction identified in the excised hearts by staining with triphenyltetrazolium chloride. The distribution of radioactivity from Te-123m HDA in dog hearts sectioned at autopsy showed a linear correlation (r = 0.94) with blood flow as determined with scandium-46-labeled microspheres

  13. LaBiTe3: An unusual thermoelectric material

    KAUST Repository

    Singh, Nirpendra; Schwingenschlö gl, Udo

    2014-01-01

    Using first-principles calculations and semi-classical Boltzmann transport theory, the thermoelectric properties of LaBiTe3 are studied. The band gap and, hence, the thermoelectric response are found to be easily tailored by application of strain. Independent of the temperature, the figure of merit turns out to be maximal at a doping of about 1.6 × 1021 cm-3. At room temperature we obtain values of 0.4 and 0.5 for unstrained and moderately strained LaBiTe3, which increases to 1.1 and 1.3 at 800 K. A large spin splitting is observed in the conduction band at the T point. Therefore, LaBiTe3 merges characteristics that are interesting for thermoelectric as well as spintronic devices.

  14. Split Dirac cones in HgTe/CdTe quantum wells due to symmetry-enforced level anticrossing at interfaces

    Science.gov (United States)

    Tarasenko, S. A.; Durnev, M. V.; Nestoklon, M. O.; Ivchenko, E. L.; Luo, Jun-Wei; Zunger, Alex

    2015-02-01

    HgTe is a band-inverted compound which forms a two-dimensional topological insulator if sandwiched between CdTe barriers for a HgTe layer thickness above the critical value. We describe the fine structure of Dirac states in the HgTe/CdTe quantum wells of critical and close-to-critical thicknesses and show that the necessary creation of interfaces brings in another important physical effect: the opening of a significant anticrossing gap between the tips of the Dirac cones. The level repulsion driven by the natural interface inversion asymmetry of zinc-blende heterostructures considerably modifies the electron states and dispersion but preserves the topological transition at the critical thickness. By combining symmetry analysis, atomistic calculations, and extended k .p theory with interface terms, we obtain a quantitative description of the energy spectrum and extract the interface mixing coefficient. We discuss how the fingerprints of the predicted zero-magnetic-field splitting of the Dirac cones could be detected experimentally by studying magnetotransport phenomena, cyclotron resonance, Raman scattering, and THz radiation absorption.

  15. Chemical states and optical properties of thermally evaporated Ge-Te and Ge-Sb-Te amorphous thin films

    Energy Technology Data Exchange (ETDEWEB)

    Kumar, S.; Singh, D.; Shandhu, S. [Semiconductor Laboratory, Department of Physics, Guru Nanak Dev University Amritsar (India); Thangaraj, R., E-mail: rthangaraj@rediffmail.com [Semiconductor Laboratory, Department of Physics, Guru Nanak Dev University Amritsar (India)

    2012-07-15

    Thin amorphous films of Ge{sub 22}Sb{sub 22}Te{sub 56} and Ge{sub 50}Te{sub 50} have been prepared from their respective polycrystalline bulk on glass substrates by thermal evaporation technique. The amorphous nature of the films was checked with X-ray diffraction studies. Amorphous-to-crystalline transition of the films has been induced by thermal annealing and the structural phases have been identified by X-ray diffraction. The phase transformation temperature of the films was evaluated by temperature dependent sheet resistance measurement. The chemical structure of the amorphous films has been investigated using X-ray photoelectron spectroscopy and the role of Sb in phase change Ge{sub 22}Sb{sub 22}Te{sub 56} film is discussed. Survey and core level (Ge 3d, Te 3d, Te 4d, Sb 3p, Sb 3d, O 1s, C 1s) band spectra has been recorded and analyzed. For optical studies, the transmittance and the reflectance spectra were measured over the wavelength ranges 400-2500 nm using UV-vis-NIR spectroscopy. The optical band gap, refractive index and extinction coefficient are also presented for thermally evaporated amorphous thin films.

  16. Piezomodulated reflectivity on CdMnTe/CdTe quantum well structures as a new standard characterization method

    Energy Technology Data Exchange (ETDEWEB)

    Kurtz, E.; Schmitt, K.; Hommel, D.; Waag, A.; Bicknell-Tassius, R.N.; Landwehr, G. (Physikalisches Inst., Univ. Wuerzburg (Germany))

    1993-01-30

    Piezomodulated reflectivity (PZR) measurements are reported for the first time as a standard characterization method for CdMnTe/CdTe single (SQW) and multiple (MQW) quantum wells grown by molecular beam epitaxy on CdTe substrates 1 mm thick. Previously, modulation spectroscopy studies of II-VI structures required thin substrates which needed special preparation. In this paper we present studies of optical properties of CdMnTe/CdTe SQWs and MWQs using the PZR technique. The samples, mounted on a sinusoidally driven piezoelectric transducer are subjected to an alternating strain. Exploiting ''lock-in'' techniques, the first derivative of the reflectivity is measured directly. Specific electronic transitions, e.g. excitons, are well resolved in the modulated spectrum and can be easily identified. This makes PZR a very sensitive and powerful tool for the characterization of quantum well structures, and a useful complement to other standard techniques such as photoluminescence and excitation spectroscopy. (orig.).

  17. Bromine doping of CdTe and CdMnTe epitaxial layers grown by molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Waag, A. (Physikalisches Inst. der Univ. Wuerzburg (Germany)); Scholl, S. (Physikalisches Inst. der Univ. Wuerzburg (Germany)); Schierstedt, K. von (Physikalisches Inst. der Univ. Wuerzburg (Germany)); Hommel, D. (Physikalisches Inst. der Univ. Wuerzburg (Germany)); Landwehr, G. (Physikalisches Inst. der Univ. Wuerzburg (Germany)); Bilger, G. (Zentrum fuer Sonnenenergie und Wasserstoff-Forschung, Stuttgart (Germany))

    1993-03-01

    We report on the n-type doping of CdTe and CdMnTe with bormine as a novel dopant material. /the thin films were grown by molecular beam epitaxy. ZnBr[sub 2] was used as a source material for the n-type doping. Free carrier concentrations at room temperature of up to 2.8x10[sup 18] cm[sup -3] could be readily obtained for both CdTe as well as CdMnTe thin films with Mn concentrations below 10%. This is to our knowledge the highest value ever obtained for the dilute magnetic semiconductor CdMnTe. For ZnBr[sub 2] source temperatures up to 60 C - corresponding to a free carrier concentration of (2-3)x10[sup 18] cm[sup -3] - the free carrier concentration of the epitaxial film increases with ZnBr[sub 2] source temperature. For higher ZnBr[sub 2] source temperatures compensation becomes dominant, which is indicated by a steep decrease of the free carrier concentration with increasing ZnBr[sub 2] source temperature. In addition the carrier mobility decreases drastically for such high dopant fluxes. A model of bromine incorporation is proposed. (orig.)

  18. Superconductivity with twofold symmetry in Bi2Te3/FeTe0.55Se0.45 heterostructures

    Science.gov (United States)

    Du, Zengyi

    2018-01-01

    Topological superconductors are an interesting and frontier topic in condensed matter physics. In the superconducting state, an order parameter will be established with the basic or subsidiary symmetry of the crystalline lattice. In doped Bi2Se3 or Bi2Te3 with a basic threefold symmetry, it was predicted, however, that bulk superconductivity with order parameters of twofold symmetry may exist because of the presence of odd parity. We report the proximity effect–induced superconductivity in the Bi2Te3 thin film on top of the iron-based superconductor FeTe0.55Se0.45. By using the quasiparticle interference technique, we demonstrate clear evidence of twofold symmetry of the superconducting gap. The gap minimum is along one of the main crystalline axes following the so-called Δ4y notation. This is also accompanied by the elongated vortex shape mapped out by the density of states within the superconducting gap. Our results provide an easily accessible platform for investigating possible topological superconductivity in Bi2Te3/FeTe0.55Se0.45 heterostructures. PMID:29888330

  19. Nanosized Thin SnO2 Layers Doped with Te and TeO2 as Room Temperature Humidity Sensors

    Directory of Open Access Journals (Sweden)

    Biliana Georgieva

    2014-05-01

    Full Text Available In this paper the humidity sensing properties of layers prepared by a new method for obtaining doped tin oxide are studied. Different techniques—SEM, EDS in SEM, TEM, SAED, AES and electrical measurements—are used for detailed characterization of the thin layers. The as-deposited layers are amorphous with great specific area and low density. They are built up of a fine grained matrix, consisting of Sn- and Te-oxides, and a nanosized dispersed phase of Te, Sn and/or SnTe. The chemical composition of both the matrix and the nanosized particles depends on the ratio RSn/Te and the evaporation conditions. It is shown that as-deposited layers with RSn/Te ranging from 0.4 to 0.9 exhibit excellent characteristics as humidity sensors operating at room temperature—very high sensitivity, good selectivity, fast response and short recovery period. Ageing tests have shown that the layers possess good long-term stability. Results obtained regarding the type of the water adsorption on the layers’ surface help better understand the relation between preparation conditions, structure, composition and humidity sensing properties.

  20. Distributed Bragg reflectors obtained by combining Se and Te compounds: Influence on the luminescence from CdTe quantum dots

    Energy Technology Data Exchange (ETDEWEB)

    Rousset, J.-G., E-mail: j-g.rousset@fuw.edu.pl; Kobak, J.; Janik, E.; Slupinski, T.; Golnik, A.; Kossacki, P.; Nawrocki, M.; Pacuski, W. [Faculty of Physics, Institute of Experimental Physics, University of Warsaw, ul. Pasteura 5, PL-02-093 Warszawa (Poland); Parlinska-Wojtan, M. [Institute of Nuclear Physics, Polish Academy of Sciences, PL-31342 Krakow (Poland)

    2016-05-14

    We report on the optical properties of structures containing self assembled CdTe quantum dots (QDs) combined with Te and Se based distributed Bragg reflectors either in a half cavity geometry with a relatively broad cavity mode or in a full cavity geometry where the cavity mode is much narrower. We show that for both structures the extraction coefficient of the light emitted from the QDs ensemble is enhanced by more than one order of magnitude with respect to the QDs grown on a ZnTe buffer. However, a single QD line broadening is observed and attributed to an unintentional incorporation of Se in the vicinity of the CdTe QDs. We show that postponing the QDs growth for 24 h after the distributed Bragg reflector deposition allows recovering sharp emission lines from individual QDs. This two step growth method is proven to be efficient also for the structures with CdTe QDs containing a single Mn{sup 2+} ion.

  1. Description of the ternary system Cu-Ge-Te

    International Nuclear Information System (INIS)

    Dogguy, M.; Carcaly, C.; Rivet, J.; Flahaut, J.

    1977-01-01

    The Cu-Ge-Te ternary system has been studied by DTA and by crystallographic and metallographic analysis. The existence of a ternary compound Cu 2 GeTe 3 is demonstrated; this compound has a ternary incongruent melting point at 500 0 C. This ternary compound has a superstructure of a zinc blende type. The study shows the existence of five ternary eutectics. Two liquid-liquid miscibility gaps exist: the first is situated entirely in the ternary system; the second gives a monotectic region within the ternary system. (Auth.)

  2. ReGaTE: Registration of Galaxy Tools in Elixir

    DEFF Research Database (Denmark)

    Doppelt-Azeroual, Olivia; Mareuil, Fabien; Deveaud, Eric

    2017-01-01

    such popular environment is the Galaxy framework, with currently more than 80 publicly available Galaxy servers around the world. In the context of a generic registry for bioinformatics software, such as bio.tools, Galaxy instances constitute a major source of valuable content. Yet there has been, to date...... of their services while enriching the software discovery function that bio.tools provides for its users. The source code of ReGaTE is freely available on Github at https://github.com/C3BI-pasteur-fr/ReGaTE....

  3. Reduced field TE01 X-Band traveling wave window

    International Nuclear Information System (INIS)

    Fowkes, W.R.; Callin, R.S.; Tantawi, S.G.; Wright, E.L.

    1995-01-01

    The RF electric field is reduced by more than a factor of two using a pair of symmetrically located irises in a new type of klystron window operating in the TE 01 mode at X-Band. The advantages of this window over the usual TE 01 half-wave resonant window are discussed as well as theory and operating results. Ultra high purity alumina formed by the HIP process is used. This window has been successfully tested at 100 MW with a 1.5 microsecond RF pulse width and is being used on the XL series klystrons

  4. Synthesis and crytallization of amorphous In-Te alloys

    International Nuclear Information System (INIS)

    Vengrenovich, R.D.; Lopatnyuk, I.A.; Mikhal'chenko, V.P.; Kasiyan, I.M.; Geshko, E.I.

    1988-01-01

    Tendency of Te-In alloys with indium content from 5 to 40 % to amorphization is investigated. It is marked that in this interval of concentrations the alloys have the tendency to subcooling even at cooling velocities equalling only 0.2-0.3 K/s. Maximal subcooling ΔT=70 deg takes place for the eutectic composition. Tendency of Te-In alloys to vitrification is explained by the character to interatomic interactions in a liquid, the interactions promote the formation of molecular clusters in it in cooling, that leads to fast increase of viscosity and to increase of T g amorphization temperature

  5. Decay pattern of the Pygmy Dipole Resonance in 130Te

    Science.gov (United States)

    Isaak, J.; Beller, J.; Fiori, E.; Krtička, M.; Löher, B.; Pietralla, N.; Romig, C.; Rusev, G.; Savran, D.; Scheck, M.; Silva, J.; Sonnabend, K.; Tonchev, A.; Tornow, W.; Weller, H.; Zweidinger, M.

    2014-03-01

    The electric dipole strength distribution in 130Te has been investigated using the method of Nuclear Resonance Fluorescence. The experiments were performed at the Darmstadt High Intensity Photon Setup using bremsstrahlung as photon source and at the High Intensity overrightarrow γ -Ray Source, where quasi-monochromatic and polarized photon beams are provided. Average decay properties of 130Te below the neutron separation energy are determined. Comparing the experimental data to the predictions of the statistical model indicate, that nuclear structure effects play an important role even at sufficiently high excitation energies. Preliminary results will be presented.

  6. Si te sobreprotejo, no aprenderás a volar

    OpenAIRE

    Ortega Delgado, Juan Carlos; Enríquez Lara, Mónica Mercedes

    2013-01-01

    Tesis (Maestría en Educación desde la Diversidad). Universidad de Manizales. Facultad de Ciencias Sociales y Humanas, 2013 RESUMEN 1. Mónica Enríquez 2. Juan Carlos Ortega SI TE SOBREPROTEJO, NO APRENDERÁS A VOLAR El presente artículo se basa en la investigación denominada SI TE SOBREPROTEJO, NO APRENDERÁS A VOLAR, realizada acerca de la sobreprotección vista como otra forma de maltrato, la cual se ubica en el macroproyecto de Desarrollo Humano, Sujeto y diversidad, de...

  7. A short TE gradient-echo sequence using asymmetric sampling

    International Nuclear Information System (INIS)

    Fujita, Norihiko; Harada, Kohshi; Sakurai, Kosuke; Nakanishi, Katsuyuki; Kim, Shyogen; Kozuka, Takahiro

    1990-01-01

    We have developed a gradient-echo pulse sequence with a short TE less than 4 msec using a data set of asymmetric off-center sampling with a broad bandwidth. The use of such a short TE significantly reduces T 2 * dephasing effect even in a two-dimensional mode, and by collecting an off-center echo, motion-induced phase dispersion is also considerably decreased. High immunity of this sequence to these dephasing effects permits clear visualization of anatomical details near the skull base where large local field inhomogeneities and rapid blood flow such as in the internal carotid artery are present. (author)

  8. Structure of CdTe nanoparticles in glass

    Science.gov (United States)

    Hayes, T. M.; Nagpal, Swati; Persans, P. D.

    2000-03-01

    Optical long-pass wavelength filters are generally made by growing small crystallites of appropriate semiconductors in a transparent glass matrix. Depending on the semiconductor, these systems are candidates for interesting and important nonlinear optical switching applications. The structure of these nanocrystals has been shown to be a valuable indicator of the chemical and thermodynamic processes during crystallite growth and dissolution. We have used x-ray absorption spectroscopy to study the structure of the crystallites produced during heat treatment of filter glasses containing Cd and Te and producing optical absorption edges at the band gap of bulk CdTe. The results will be discussed.

  9. 2 TeV HEB beam abort at the SSCL

    International Nuclear Information System (INIS)

    Schailey, R.; Bull, J.; Clayton, T.; Kocur, P.; Mokhov, N.

    1993-05-01

    The High Energy Booster (HEB) of the Superconducting Super Collider Laboratory (SSCL) will require a full aperture beam abort over a dynamic energy range of 200 GeV to 2 TeV. Since the HEB is a bi-polar machine, both clockwise (CW) and the counter-clockwise (CCW) beam aborts are required. Also, the stored beam energy of 6.55 MJ in the superconducting HEB imposes upon the full aperture requirement. In this report, we describe the abort channels in the HEB utility straight sections, aperture restrictions, mechanical interferences and solutions, kicker misfires, and a 1 TeV beam absorber

  10. 2 TeV HEB beam abort at the SSCL

    International Nuclear Information System (INIS)

    Schailey, R.; Bull, J.; Clayton, T.; Kocur, P.; Mokhov, N.V.

    1993-01-01

    The High Energy Booster (HEB) of the Superconducting Super Collider Laboratory (SSCL) will require a full aperture beam abort over a dynamic energy range of 200 GeV to 2 TeV. Since the HEB is a bi-polar machine, both clockwise (CW) and counter-clockwise (CCW) beam aborts are required. Also, the stored beam energy of 6.55 MJ in the superconducting HEB imposes the full aperture requirement. In this report, the authors describe the abort channels in the HEB utility straight sections, aperture restrictions, mechanical interferences and solutions, kicker misfires, and a 2 TeV beam absorber

  11. OSPF-TE Extensions for Green Routing in Optical Networks

    DEFF Research Database (Denmark)

    Wang, Jiayuan; Ricciardi, S.; Fagertun, Anna Manolova

    2012-01-01

    This paper proposes extensions to the OSPF-TE protocol to enable green routing in GMPLS-controlled optical networks. Simulation results show a remarkable reduction in CO2 emissions by preferring network elements powered by green energy sources in the connection routing.......This paper proposes extensions to the OSPF-TE protocol to enable green routing in GMPLS-controlled optical networks. Simulation results show a remarkable reduction in CO2 emissions by preferring network elements powered by green energy sources in the connection routing....

  12. Quasi-optical millimeter wave rotating TE62 mode generator

    International Nuclear Information System (INIS)

    Li Shaopu; Zhang Conghui; Wang Zhong; Guo Feng; Chen Hongbin; Hu Linlin; Pan Wenwu

    2011-01-01

    The design,measurement technique and experimental results of rotating TE 6 2 mode generator are presented. The source includes millimeter wave optical system and open coaxial wave guide system. The millimeter wave optical system consists of pyramid antenna, hyperbolical reflector, parabolic reflector and quasi parabolic reflector. The open coaxial wave guide system contains open coaxial wave guide cavity, cylinder wave guide and output antenna. It is tested by network analyser and millimeter wave near field pattern auto-test system, and the purity of rotating TE 6 2 mode at 96.4 GHz is about 97%. (authors)

  13. Substructure and strong interactions at the TeV scale

    International Nuclear Information System (INIS)

    Peskin, M.E.

    1985-12-01

    A review is given of the current status of the three main theoretical ideas relevant to strong-interaction 1 TeV physics. These are composite vector bosons, Higgs bosons (''Technicolor''), and matter fermions. All involve the assumption that some object which is assumed to be fundamental in the standard model actually has dynamical internal structure. Complex, mechanistic models of the new physics are discussed. A brief digression is then made on how the weak interaction allows probing for this new structure. Direct manifestations of new 1 TeV strong interactions are discussed. 125 refs., 18 figs

  14. Decay pattern of the Pygmy Dipole Resonance in 130Te

    Directory of Open Access Journals (Sweden)

    Isaak J.

    2014-03-01

    Full Text Available The electric dipole strength distribution in 130Te has been investigated using the method of Nuclear Resonance Fluorescence. The experiments were performed at the Darmstadt High Intensity Photon Setup using bremsstrahlung as photon source and at the High Intensity γ→$\\overrightarrow \\gamma $-Ray Source, where quasi-monochromatic and polarized photon beams are provided. Average decay properties of 130Te below the neutron separation energy are determined. Comparing the experimental data to the predictions of the statistical model indicate, that nuclear structure effects play an important role even at sufficiently high excitation energies. Preliminary results will be presented.

  15. Ga–Ge–Te amorphous thin films fabricated by pulsed laser deposition

    International Nuclear Information System (INIS)

    Němec, P.; Nazabal, V.; Dussauze, M.; Ma, H.-L.; Bouyrie, Y.; Zhang, X.-H.

    2013-01-01

    UV pulsed laser deposition was employed for the fabrication of amorphous Ga–Ge–Te thin films. The local structure of the bulk glasses as well as corresponding thin films was studied using Raman scattering spectroscopy; the main structural motifs were found to be [GeTe 4 ], eventually [GaTe 4 ] corner-sharing tetrahedra and disordered Te chains. Optical functions of the films (refractive index, extinction coefficient) were characterized by variable angle spectroscopic ellipsometry. Photostability experiments showed all Ga–Ge–Te laser deposited films to be stable against 1550 nm laser irradiation in an as-deposited state. In an annealed state, the most photostable composition seems to be Ga 10 Ge 15 Te 75 . This particular composition was further studied from the point of view of thermal stability and stability against ageing in as-deposited state. - Highlights: ► Pulsed laser deposition was used for fabrication of amorphous Ga–Ge–Te thin films. ► GeTe 4 , eventually GaTe 4 tetrahedra and disordered Te chains form the film structure. ► Optical functions of Ge–Ga–Te films were characterized by spectroscopic ellipsometry. ► All as-deposited Ga–Ge–Te thin films are stable against 1550 nm irradiation. ► In annealed state, the most photostable composition seems to be Ga 10 Ge 15 Te 75

  16. The Quantum Chemistry Calculation and Thermoelectrics of Bi-Sb-Te Series

    Institute of Scientific and Technical Information of China (English)

    2002-01-01

    The density function theory and discrete variation method(DFT-DVM) was used to study correlation between composition, structure, chemical bond,and property of thermoelectrics of Bi-Sb-Te series.8 models of Bi20-xSbxTe32(x=0,2,6,8,12,14,18 and 20) were calculated.The results show that there is less difference in the ionic bonds between Te(Ⅰ)-Bi(Sb) and Te(Ⅱ)-Bi(Sb), but the covalent bond of Te(Ⅰ)-Bi(Sb) is stronger than that of Te(Ⅱ)-Bi(Sb).The interaction between Te(Ⅰ) and Te(Ⅰ) in different layers is the weakest and the interaction should be Van Der Waals power.The charge of Sb is lower than that of Bi,and the ionic bond of Te-Sb is weaker than that of Te-Bi.The covalent bond of Te-Sb is also weaker than that of Te-Bi.Therefore,the thermoelectric property may be improved by adjusting the electrical conductivity and thermal conductivity through changing the composition in the compounds of Bi-Sb-Te. The calculated results are consistent with the experiments.

  17. Process controls for Bi2Te3-Sb2Te3 prepared by mechanical alloying and hot pressing

    International Nuclear Information System (INIS)

    Lee, Go-Eun; Kim, Il-Ho; Choi, Soon-Mok; Lim, Young-Soo; Seo, Won-Seon; Park, Jae-Soung; Yang, Seung-Ho

    2014-01-01

    p-Type Bi 2 Te 3 -Sb 2 Te 3 solid solutions were prepared by mechanical alloying (MA) and hot pressing (HP) under different process conditions, after which the transport and the thermoelectric properties were evaluated. The relative densities of all hot-pressed specimens were over 98%, and the microstructure and crystal orientation were independent of the HP direction. All specimens exhibited p-type conduction, and the electrical resistivity was observed to increase slightly with increasing temperature, indicating a degenerate semiconductor behavior. The carrier concentration decreased with increasing HP temperature while the mobility increased. The maximum figure of merit obtained was 0.86 at 323 K for Bi 0.5 Sb 1.5 Te 3 hot-pressed at 648 K.

  18. Spin transport dynamics of excitons in CdTe/Cd1-xMnxTe quantum wells

    International Nuclear Information System (INIS)

    Kayanuma, Kentaro; Shirado, Eiji; Debnath, Mukul C.; Souma, Izuru; Chen, Zhanghai; Oka, Yasuo

    2001-01-01

    Transport properties of spin-polarized excitons were studied in the double quantum well system composed of Cd 0.95 Mn 0.05 Te and CdTe wells. Circular polarization degrees of the time resolved exciton photoluminescence in magnetic field showed that the spin-polarized excitons diffused from the magnetic quantum well and injected to the non-magnetic quantum well by conserving their spins. The spin-polarized excitons injected into the nonmagnetic well reaches 18% of the nonmagnetic well excitons. From the circular polarization degree and the lifetime of the magnetic quantum well excitons, the spin relaxation time of the excitons in the Cd 0.95 Mn 0.05 Te well was determined as 275 - 10 ps depending on the magnetic field strength. [copyright] 2001 American Institute of Physics

  19. Spin-polarized charge transport in HgTe/CdTe quantum well topological insulator under a ferromagnetic metal strip

    Science.gov (United States)

    Wu, Zhenhua; Luo, Kun; Yu, Jiahan; Wu, Xiaobo; Lin, Liangzhong

    2018-02-01

    Electron tunneling through a single magnetic barrier in a HgTe topological insulator has been theoretically investigated. We find that the perpendicular magnetic field would not lead to spin-flip of the edge states due to the conservation of the angular moment. By tuning the magnetic field and the Fermi energy, the edge channels can be transited from switch-on states to switch-off states and the current from unpolarized states can be filtered to fully spin polarized states. These features offer us an efficient way to control charge/spin transport in a HgTe/CdTe quantum well, and pave a way to construct the nanoelectronic devices utilizing the topological edge states.

  20. Growth features of HgCdTe LPE layers

    International Nuclear Information System (INIS)

    Huseynov, E.K.; Eminov, Sh.O.; Ibragimov, T.I.; Ismaylov, N.J.; Rajabli, A.A.

    2010-01-01

    Full text : The results of growth of Hg 1 -xCd x Te (MCT) layers by liquid phase epitaxy (LPE) from Te-rich solutions (molar fraction (Hg 1 -zCd z )(1.y)Te y , z=0.054, y=0.805 for TL=501 degrees Celsium) obtained by the tipping method in closed system is presented. Epitaxial layers with different compositions (x=0.20-0.22) and thicknesses (10-20 μm) suitable for manufacturing the photodiode structures operable at 8-14 μm spectrum range were grown on B oriented Cd 0 .96Zn 0 ,04Te polished and repolished substrates. The growth was carried out in the temperature range 500-480 degrees Celsium with cooling rates 0.05-0.1 degrees Celsium/min in a sealed quartz ampoule using the original apparatus for LPE. The attention was paid mainly to the surface morphological quality, good decantation from the layers, uniformity of composition and thickness of films. One of the limitations of the most LPE growth apparatus (cassettes) with slider or tipping system is their impossibility to wipe the last drop of growth solution from the surface of just-grown epilayer. Some remnant or residual of the growth solution tends to adhere to the surface of the epilayer after growth in such apparatus and strongly affect the surface quality. The novel apparatus for LPE providing the surface without unwanted residual drops of melt solution of Hg, Cd and Te was developed with the aim of solving such a problem. The effect of different steps of LPE growth on morphology and composition of epitaxial layers was studied. By holding the CdZnTe substrate inside the growth ampoule at the melt homogenization temperature during of 15-50 min without contact with the melt resulted in visually (using the Leitzorthoplan microscopes x 500-1000) observed surface roughness. Using the expressions for the Te-angle of Hg-Cd-Te phase diagram the effect of the preliminary synthesis of the source on liquidus temperature and composition of the epilayers was numerically evaluated. HgCdTe layers were characterized using

  1. Raman spectra of the system TeCl4-SbCl5

    International Nuclear Information System (INIS)

    Brockner, W.; Demiray, A.F.

    1980-01-01

    Raman spectra of the solid and molten TeCl 4 . SbCl 5 addition compound and of some TeCl 4 -SbCl 5 mixtures have been recorded. Two modifications of the crystalline TeCl 4 -SbCl 5 compound have been found. The structure of the melt can be described by the equilibrium TeCl 3 + + SbCl 6 - reversible TeCl 4 + SbCl 5 lying on the left side. Mixtures with other stoichiometry contain the 1:1 adduct only and excess TeCl 4 or SbCl 5 , respectively. Such melts are built up by the ionic species TeCl 3 + and SbCl 6 - also and TeCl 4 or SbCl 5 according to stoichiometry. (author)

  2. TeV e+e- linear colliders

    International Nuclear Information System (INIS)

    Le Duff, J.

    1987-12-01

    The basic philosophy and performance and technical constraints of linear e + e - colliders at TeV energies are summarized. Collider luminosity, pinch effects due to beam interaction, beam-beam bremsstrahlung, and typical parameters for an e + e - linear collider are discussed. Accelerating structures, HF power sources, electron guns, positron production, and storage rings are considered [fr

  3. TeV scale resonant leptogenesis from supersymmetry breaking

    International Nuclear Information System (INIS)

    Hambye, Thomas; March-Russell, John; West, Stephen M.

    2004-01-01

    We propose a model of TeV-scale resonant leptogenesis based upon recent models of the generation of light neutrino masses from supersymmetry-breaking effects with TeV-scale right-handed (rhd) neutrinos, N i . The model leads to naturally large cosmological lepton asymmetries via the resonant behaviour of the one-loop self-energy contribution to N i decay. Our model addresses the primary problems of previous phenomenological studies of low-energy leptogenesis: a rational for TeV-scale rhd neutrinos with small Yukawa couplings so that the out-of equilibrium condition for N i decay is satisfied; the origin of the tiny, but non-zero mass splitting required between at least two N i masses; and the necessary non-trivial breaking of flavour symmetries in the rhd neutrino sector. The low mass-scale of the rhd neutrinos and their super partners, and the TeV-scale A-terms automatically contained within the model offer opportunities for partial direct experimental tests of this leptogenesis mechanism at future colliders. (author)

  4. Verifiable origin of neutrino mass at TeV scale

    International Nuclear Information System (INIS)

    Ma, Ernest

    2002-01-01

    The physics responsible for neutrino mass may reside at or below the TeV energy scale. The neutrino mass matrix in the (ν e ν μ ν gt ) basis may then be deduced from future high-energy accelerator experiments. The newly observed excess in the muon anomalous magnetic moment may also be related

  5. Applications of CdTe to nuclear medicine. Final report

    International Nuclear Information System (INIS)

    Entine, G.

    1985-01-01

    Uses of cadmium telluride (CdTe) nuclear detectors in medicine are briefly described. They include surgical probes and a system for measuring cerebral blood flow in the intensive care unit. Other uses include nuclear dentistry, x-ray exposure control, cardiology, diabetes, and the testing of new pharmaceuticals

  6. Photoluminescence from CdxHg1-xTe

    International Nuclear Information System (INIS)

    Breivik, M; Selvig, E; Tonheim, C R; Brendhagen, E; Brudevoll, T; Rheenen, A D van; Steen, H; Nicolas, S; Lorentzen, T; Haakenaasen, R

    2008-01-01

    We present important aspects of photoluminescence (PL) of Cd x Hg 1-x Te in the infrared part of the spectrum where background thermal radiation significantly affects the PL spectrum. We show how the background spectrum can be removed from the data. We also show how the wavelength of the excitation laser affects the relative intensity of the PL peaks from a multi-layer structure. Finally, we present temperature dependent PL of a Cd 0.36 Hg 0.64 Te/Cd 0.61 Hg 0.39 Te multiple quantum well structure grown on a 4 μm thick Cd 0.36 Hg 0.64 Te buffer layer. We attribute the low temperature peak from the buffer layer to impurities. The impurity levels are depopulated as the temperature increases, resulting in a decreased PL peak intensity. Above ∼200 K a band-to-band peak from the buffer layer is observed. The quantum well peak persists up to ∼200 K

  7. Inspanning om Lean Six Sigma op kaart te zetten beloond

    NARCIS (Netherlands)

    Does, R.J.M.M.

    2008-01-01

    Prof.dr. R.J.M.M. Does is al jarenlang een fervent voorvechter voor het gebruik van statistiek. En meer recent is hij zo’n beetje de belichaming van (Lean) Six Sigma in Europa. Tal van grote organisaties hebben hem te hulp geroepen bij de invoering van (Lean) Six Sigma. Het is dan ook niet meer dan

  8. TeV GAMMA RAYS: OBSERVATIONS VERSUS EXPECTATIONS & THEORY

    Directory of Open Access Journals (Sweden)

    Frank Krennrich

    2013-12-01

    Full Text Available The scope of this paper is to discuss two important questions relevant for TeV γ-ray astronomy; the pursuit to reveal the origin of cosmic rays in our galaxy, and the opacity of the universe in γ-rays. The origin of cosmic rays stipulated the field of TeV astronomy in the first place, and led to the development of the atmospheric Cherenkov technique; significant progress has been made in the last decade through the detection of several supernova remnants, the primary suspects for harboring the acceleration sites of cosmic rays. TeV γ-rays propagate mostly unhindered through the galactic plane, making them excellent probes of processes in SNRs and other galactic sources. Key results related to the SNR origin of cosmic rays are discussed. TeV γ-ray spectra from extragalactic sources experience significant absorption when traversing cosmological distances. The opacity of the universe to γ-rays above 10 GeV progressively increases with energy and redshift; the reason lies in their pair production with ambient soft photons from the extragalactic background light (EBL. While this limits the γ-ray horizon, it offers the opportunity to gain information about cosmology, i.e. the EBL intensity, physical conditions in intergalactic space, and potentially new interaction processes. Results and implications pertaining to the EBL are given.

  9. Parton Distributions at a 100 TeV Hadron Collider

    NARCIS (Netherlands)

    Rojo, Juan

    2016-01-01

    The determination of the parton distribution functions (PDFs) of the proton will be an essential input for the physics program of a future 100 TeV hadron collider. The unprecedented center-of-mass energy will require knowledge of PDFs in currently unexplored kinematical regions such as the ultra

  10. Ghana and Côte d’Ivoire: Changing Places

    Directory of Open Access Journals (Sweden)

    Markus Eberhardt

    2010-03-01

    Full Text Available The economic histories of Ghana and Côte d’Ivoire since their independence have been dramatically different. In the period from 1970 Ghana experienced a sustained collapse in its economy such that by 1983 its level of real GDP per person had fallen by some 40%, its currency was worthless and the third attempt at democratic government had ended with a fourth military coup in 15 years. In contrast, Côte d’Ivoire had enjoyed more or less uninterrupted growth such that by 1980 real GDP per person was twice its 1960s level. However, the period since the mid-1980s has seen a remarkable reversal of fortunes. From 1983 Ghana has experienced sustained recovery, while Côte d’Ivoire has seen large falls in income, its first coup in 1999 and a decline into civil war and ethnic unrest. From being among the least successful Ghana has gone to being among the most successful of African countries, changing places with Côte d’Ivoire which has seen its economy transformed from one experiencing rapid growth to stagnation in a country ravaged by a bitter civil war. This article seeks to document and explain this extraordinary reversal of fortunes.

  11. Thermal annealing and ionic abrasion in ZnTe

    International Nuclear Information System (INIS)

    Bensahel, D.

    1975-01-01

    Thermal annealing of the ZnTe crystal is studied first in order to obtain information on the aspect of the penetration profile. Ionic abrasion is then investigated to find out whether it produces the same effects as ionic implantation, especially for luminescence [fr

  12. Minimum bias measurement at 13 TeV

    CERN Document Server

    Orlando, Nicola; The ATLAS collaboration

    2017-01-01

    The modelling of Minimum Bias (MB) is a crucial ingredient to learn about the description of soft QCD processes and to simulate the environment at the LHC with many concurrent pp interactions (pile-up). We summarise the ATLAS minimum bias measurements with proton-proton collision at 13 TeV center-of-mass-energy at the Large Hadron Collider.

  13. Early 13 TeV Results from the ATLAS Experiment

    CERN Multimedia

    CERN. Geneva

    2015-01-01

    The ATLAS experiment has recorded almost 200 pb-1 of collision data at 13 TeV centre-of-mass energy. The seminar presents the status of the data taking, the commissioning of the event reconstruction, focusing on the key techniques that have allowed to quickly reach a good understanding of the basic physics objects, and early physics results.

  14. Bulk band structure of Bi2Te3

    DEFF Research Database (Denmark)

    Michiardi, Matteo; Aguilera, Irene; Bianchi, Marco

    2014-01-01

    -electron full-potential linearized augmented-plane-wave (FLAPW) formalism, fully taking into account spin-orbit coupling. Quasiparticle effects produce significant changes in the band structure of Bi2Te3 when compared to LDA. Experimental and calculated results are compared in the spectral regions where...

  15. Te Kotahitanga: Culturally Responsive Professional Development for Teachers

    Science.gov (United States)

    Bishop, Russell; Berryman, Mere

    2010-01-01

    Te Kotahitanga is a research and professional development project that aims to support teachers to raise the achievement of New Zealand's indigenous Maori students in public/mainstream classrooms. An Effective Teaching Profile, developed from the voices of Maori students, their families, principals and some of their teachers, provides direction…

  16. Thermal stability of substitutional ag in CdTe

    NARCIS (Netherlands)

    Jahn, SG; Hofsass, H; Restle, M; Ronning, C; Quintel, H; BharuthRam, K; Wahl, U

    The thermal stability of substitutional Ag in CdTe was deduced from lattice location measurements at different temperatures. Substitutional Ag probe atoms were generated via transmutation doping from radioactive Cd isotopes. The lattice sites of Ag isotopes were determined by measuring the

  17. Bruggen bouwen; Havisten leren om coherente teksten te schrijven

    NARCIS (Netherlands)

    Elving, Klaske; van den Bergh, H.H.

    2016-01-01

    Havo 5-leerlingen slagen er onvoldoende in om coherente teksten te schrijven. Vaak bestaan de teksten die zij schrijven voor het schoolexamen (veelal betogen, beschouwingen) uit losse mededelingen, zonder onderling verband. Klaske Elving en Huub van den Bergh onderzochten of de topical structure

  18. SYNTHESIS AND CHARACTERIZATION OF CdTe QUANTUM ...

    African Journals Online (AJOL)

    Preferred Customer

    variables, including pH values, Cd/Te and Cd/Cys molar ratios, on the ... QDs requires nitrogen as the protective gas at the initial stage. ... three-fold volume isopropyl alcohol, and the sediment was collected after centrifugation at 4000.

  19. Search for TeV gamma rays from Geninga

    International Nuclear Information System (INIS)

    Fegan, D.J.; Akerlof, C.W.; Breslin, A.C.; Cawley, M.F.; Chantell, M.; Fennell, S.; Gaidos, J.A.; Hagan, J.; Hillas, A.M.; Kerrick, A.D.; Lamb, R.C.; Lawrence, M.A.; Lewis, D.A.; Mayer, D.I.; Mohanty, G.; O'Flaherty, K.S.; Punch, M.; Reynolds, P.T.; Rovero, A.; Schubnell, M.; Sembroski, G.; Weekes, T.C.; West, M.

    1993-01-01

    Recently the Tata group have reported (1) the detection of TeV γ-rays from Geminga. Results of a search by the Whipple observatory Collaboration are presented here, based on observations made during 1989--90 and 1990--91, using the 10 m high resolution imaging cerenkov camera

  20. ATLAS 13 TeV event displays - 2017 Summer Conferences

    CERN Multimedia

    ATLAS Collaboration

    2017-01-01

    Summer 2017: The ATLAS Collaboration released an impressive number of results using data collected at 13 TeV. Some of the corresponding event displays are grouped here for media and press. The reference to the conference note is given in the caption. Read more on ATLAS results with the links provided below.

  1. IDRC in Côte d'Ivoire

    International Development Research Centre (IDRC) Digital Library (Canada)

    communities, also contributed to the protection of biodiversity by carry- ing out an inventory of medicinal and edible plants that grow in. Côte d'Ivoire's forests. .... in parasitology at the University of Cocody-Abidjan, is comparing and testing the toxicity and effectiveness of local plants used as traditional anti-malarial medicines.

  2. LaTeX - Know what you are missing

    Directory of Open Access Journals (Sweden)

    Gunther Maier

    2016-11-01

    Full Text Available This article gives a brief introduction to \\LaTeX\\ and related tools. The aim is to give an overview, to demonstrate the flexibility and versatility of the software, and to assist the reader taking first steps using it. The article links to a number of valuable resources for further information.

  3. Scaling linear colliders to 5 TeV and above

    International Nuclear Information System (INIS)

    Wilson, P.B.

    1997-04-01

    Detailed designs exist at present for linear colliders in the 0.5-1.0 TeV center-of-mass energy range. For linear colliders driven by discrete rf sources (klystrons), the rf operating frequencies range from 1.3 GHz to 14 GHz, and the unloaded accelerating gradients from 21 MV/m to 100 MV/m. Except for the collider design at 1.3 GHz (TESLA) which uses superconducting accelerating structures, the accelerating gradients vary roughly linearly with the rf frequency. This correlation between gradient and frequency follows from the necessity to keep the ac open-quotes wall plugclose quotes power within reasonable bounds. For linear colliders at energies of 5 TeV and above, even higher accelerating gradients and rf operating frequencies will be required if both the total machine length and ac power are to be kept within reasonable limits. An rf system for a 5 TeV collider operating at 34 GHz is outlined, and it is shown that there are reasonable candidates for microwave tube sources which, together with rf pulse compression, are capable of supplying the required rf power. Some possibilities for a 15 TeV collider at 91 GHz are briefly discussed

  4. Synthesis of PbTe nanocubes, worm-like structures

    Indian Academy of Sciences (India)

    ... the optical bandgap energies of 1.61, 1.23 and 1.01 eV, respectively. Photoconductivity measurement shows that the prepared nanocrystalline PbTe thin films of different morphology exhibits good response. This structure induced change in optical properties may have potential applications in optoelectronics devices.

  5. Transplanckian collisions in TeV scale gravity

    Indian Academy of Sciences (India)

    Collisions at transplanckian energies offer model independent tests of TeV scale gravity. One spectacular signal is given by black-hole production, though a full calculation of the corresponding cross-section is not yet available. Another signal is given by gravitational elastic scattering, which may be less spectacular but ...

  6. Gamma Spectroscopy with Pixellated CdZnTe Gamma Detectors

    International Nuclear Information System (INIS)

    Shor, A.; Mardor, I.; Eisen, Y.

    2002-01-01

    Pixellated CdZnTe detectors are good candidates for room temperature gamma detection requiring spectroscopic performance with imaging capabilities. The CdZnTe materials possess high resistivity and good electron charge transport properties. The poor charge transport for the holes inherent in the CdZnTe material can be circumvented by fabricating the electrodes in any one of a number of structures designed for unipolar charge detection[1]. Recent interest in efficient gamma detection at relatively higher gamma energies has imposed more stringent demands on the CdZnTe material and on detector design and optimization. We developed at Soreq a technique where signals from all pixels and from the common electrode are processed, and then a correction is applied for improving the energy resolution and the photopeak efficiency. For illumination with an un-collimated 133 Ba source , we obtain a combined detector energy resolution of 5.0 % FWHM for the 81 keV peak, and 1.5 % FWHM for the 356 keV peak. We discuss the importance of detector material with high electron (μτ) e for thick Pixellated detectors

  7. Analysis of a shielded TE011 mode composite dielectric resonator ...

    Indian Academy of Sciences (India)

    Abstract. Analysis of a TE011 mode composite sapphire–rutile dielectric resonator has been car- ried out to study the temperature variation of resonance frequency, close to the Cs atomic clock hyperfine frequency of 9.192 GHz. The complementary behavior of dielectric permittivity with tem- perature of the composite has ...

  8. ATLAS events at 13 TeV - 2016 conferences

    CERN Multimedia

    ATLAS Collaboration

    2016-01-01

    The ATLAS collaboration has released in 2016 an impressive number of results using data collected at 13 TeV. Some of the corresponding event displays are grouped here for media and press. The reference to the conference note is given in the caption. Read more on ATLAS results with the links provided below.

  9. Hydrogenated amorphous silicon photoresists for HgCdTe patterning

    Energy Technology Data Exchange (ETDEWEB)

    Hollingsworth, R.E.; DeHart, C.; Wang, L.; Dinan, J.H.; Johnson, J.N.

    1997-07-01

    A process to use a hydrogenated amorphous silicon (a-Si:H) film as a dry photoresist mask for plasma etching of HgCdTe has been demonstrated. The a-Si:H films were deposited using standard plasma enhanced chemical vapor deposition with pure silane as the source gas. X-ray photoelectron spectra show that virtually no oxide grows on the surface of an a-Si:H film after 3 hours in air, indicating that it is hydrogen passivated. Ultraviolet light frees hydrogen from the surface and enhances the oxide growth rate. A pattern of 60 micron square pixels was transferred from a contact mask to the surface of an a-Si:H film by ultraviolet enhanced oxidation in air. For the conditions used, the oxide thickness was 0.5--1.0 nm. Hydrogen plasmas were used to develop this pattern by removing the unexposed regions of the film. A hydrogen plasma etch selectivity between oxide and a-Si:H of greater than 500:1 allows patterns as thick as 700 nm to be generated with this very thin oxide. These patterns were transferred into HgCdTe by etching in an electron cyclotron resonance plasma. An etch selectivity between a-Si:H and HgCdTe of greater than 4:1 was observed after etching 2,500 nm into the HgCdTe. All of the steps are compatible with processing in vacuum.

  10. Ziek en Zeer : Tulpengalmijt niet te detecteren bij tulpenoogst

    NARCIS (Netherlands)

    Vink, P.

    2012-01-01

    Bij onderzoek naar het hoe en in welke vorm tulpengalmijt tijdens de oogst met tulpenbollen in de bewaring terecht kan komen is gebleken dat dit in representatieve monsters niet is te detecteren. Dit lijkt een bevestiging voor het algemene idee dat de grote meerderheid van de bollen zijn besmetting

  11. Band structure of CdTe under high pressure

    International Nuclear Information System (INIS)

    Jayam, Sr. Gerardin; Nirmala Louis, C.; Amalraj, A.

    2005-01-01

    The band structures and density of states of cadmium telluride (CdTe) under various pressures ranging from normal to 4.5 Mbar are obtained. The electronic band structure at normal pressure of CdTe (ZnS structure) is analyzed and the direct band gap value is found to be 1.654 eV. CdTe becomes metal and superconductor under high pressure but before that it undergoes structural phase transition from ZnS phase to NaCl phase. The equilibrium lattice constant, bulk modulus and the phase transition pressure at which the compounds undergo structural phase transition from ZnS to NaCl are predicted from the total energy calculations. The density of states at the Fermi level (N(E F )) gets enhanced after metallization, which leads to the superconductivity in CdTe. In our calculation, the metallization pressure (P M = 1.935 Mbar) and the corresponding reduced volume ((V/V 0 ) M = 0.458) are estimated. Metallization occurs via direct closing of band gap at Γ point. (author)

  12. Massless Dirac fermions in semimetal HgCdTe

    Science.gov (United States)

    Marchewka, M.; Grendysa, J.; Żak, D.; Tomaka, G.; Śliż, P.; Sheregii, E. M.

    2017-01-01

    Magneto-transport results obtained for the strained 100 nm thick Hg1-x CdxTe (x=0.135) layer grown by MBE on the CdTe/GaAs substrate are interpreted by the 8×8 kp model with the in-plane tensile strain. The dispersion relation for the investigated structure proves that the Dirac point is located in the gap caused by the strain. It is also shown that the fan of the Landau Levels (LL's) energy calculated for topological protected surface states for the studied HgCdTe alloy corresponds to the fan of the LL's calculated using the graphen-like Hamiltonian which gives excellent agreement with the experimental data for velocity on the Fermi level equal to vf ≈ 0.85×106 m/s. That characterized strained Hg1-x CdxTe layers (0.13 < x < 0.14) are a perfect Topological Insulator with good perspectives of further applications.

  13. Heavy flavour production in 13 TeV pp collisions

    CERN Multimedia

    Braun, Svende Annelies

    2015-01-01

    This summer first data at the unprecedented energy of 13 TeV is collected at the LHC. This opens a new era in searches for new particles and precision tests of the Standard Model. Heavy flavour production plays an important role both as precision QCD test and as backgrounds for new particles. The first measurements of heavy flavour production are presented.

  14. The 130Te (p,p') reaction on analog resonances

    International Nuclear Information System (INIS)

    Martinez Ruiz, M. del C.H.; Cescato, M.L.; Foster Junior, J.L.; Krmpotic, F.

    1983-07-01

    Angular distributions for elastic and inelastic scattering have been measured on six analog resonances in the 130 Te + p system and at two off resonance energies. Partial widths are deduced from the angular distributions. Formulae for the spectroscopic amplitudes within the framework of quasiparticle random phase approximation are presented. The experimental results are compared with the theoretical predictions. (Author) [pt

  15. Synthesis and characterization of PbTe micro/nanostructures ...

    Indian Academy of Sciences (India)

    Administrator

    hydrothermal method by using a novel capping agent. SHAHLA ... Up to now, various methods have been ... control the morphology of nanomaterials (Lisiecki et al. 1996 .... Based on the available reports, it was found that PbTe can be formed ...

  16. Event displays in 13 TeV data

    CERN Document Server

    CMS Collaboration

    2016-01-01

    This performance note presents some illustrative event displays at a center-of-mass energy of 13 TeV. The data set consists of the first proton-proton collision data recorded by the CMS detector in 2015 with a magnetic field of 3.8 Teslas.

  17. Event displays in 13 TeV data

    CERN Document Server

    CMS Collaboration

    2016-01-01

    This performance note presents some illustrative event displays together with kinematic quantities for diboson production candidates at a center-of-mass energy of 13 TeV. The data set consists of the proton-proton collision data recorded by the CMS detector in 2016 with a magnetic field of 3.8 Teslas.

  18. Event displays at 13 TeV of 2016 data

    CERN Document Server

    CMS Collaboration

    2017-01-01

    This performance note presents some illustrative event displays at a center-of-mass energy of 13 TeV. The data set consists of the proton-proton collision data recorded by the CMS detector in 2016 with a magnetic field of 3.8 Tesla.

  19. A Unified Analysis of Japanese Aspect Marker "te iru."

    Science.gov (United States)

    Shinzato, Rumiko

    1993-01-01

    Following Jacobson's 1990 work, this study is another attempt to offer a unified analysis of the Japanese aspect marker "te iru" that touches upon Gestalt psychologists' ideas of figure/ground opposition, Langacker's cognitive grammar, and Kunihiro's cognitive analysis. (Contains 34 references.) (LB)

  20. + jets in collisions at 7 TeV with ATLAS

    Indian Academy of Sciences (India)

    Abstract. Measurements of differential cross-sections of boson production in association with jets, and jets containing hadrons are presented. The measurements are based on 35 pb-1 of collisions at s = 7 TeV collected with the ATLAS detector at the LHC, using the electron and muon decay channels of the boson.

  1. The determination of the surface potential for the CdxHg1-xTe crystals and the V-CdxHg1-xTe and Ni-V-CdxMg1-xTe structures

    International Nuclear Information System (INIS)

    Veliyulin, Eh.I.; Ragimova, R.A.; Mamedov, A.A.

    1996-01-01

    Surface potential of semiconductor crystals n-Cd x Hg 1-x Te (unannealed and annealed in mercury vapors) and of the structures V-Cd x Hg 1-x Te, Ni-V-Cd x Hg 1-x Te has been defined using spectroscopy of weak-field electric reflection. It is shown that a deep penetration of vanadium atoms in near the surface region of the crystal occurs in the structures on the basis of unannealed Cd x Hg 1-x Te. 1 ref.; 4 figs

  2. 77 FR 38714 - Proposed Collection; Comment Request for the TE/GE Compliance Check Questionnaires

    Science.gov (United States)

    2012-06-28

    ... TE/GE Compliance Check Questionnaires AGENCY: Internal Revenue Service (IRS), Treasury. ACTION..., the IRS is soliciting comments concerning the TE/GE Compliance Check Questionnaires. DATES: Written... [email protected] . SUPPLEMENTARY INFORMATION: Title: TE/GE Compliance Check Questionnaires. OMB...

  3. 78 FR 63565 - Proposed Collection; Comment Request for the TE/GE Compliance Check Questionnaires

    Science.gov (United States)

    2013-10-24

    ... TE/GE Compliance Check Questionnaires AGENCY: Internal Revenue Service (IRS), Treasury. ACTION..., the IRS is soliciting comments concerning the TE/GE Compliance Check Questionnaires. DATES: Written... . SUPPLEMENTARY INFORMATION: Title: TE/GE Compliance Check Questionnaires. OMB Number: 1545-2071. Form Number: Not...

  4. Novel Approach to Front Contact Passivation for CdTe Photovoltaics

    Energy Technology Data Exchange (ETDEWEB)

    Kephart, Jason

    2018-02-18

    The goal of this project was to study the use of sputter-deposited oxide materials for interface passivation of CdTe-based photovoltaics. Several candidate materials were chosen based on their promise in passivating the CdTe and CdSeTe semiconductor interface, chemical and thermal stability to device processing, and ability to be deposited by sputter deposition.

  5. Boron-doped MnTe semiconductor-sensitized ZnO solar cells

    Indian Academy of Sciences (India)

    Administrator

    The B-doped MnTe semiconductor was grown on ZnO using two stages of the ... nanoparticles (NPs), i.e. MnTe and MnTe2 were observed with a diameter range of approximately ..... Kongkanand A, Tvrdy K, Takechi K, Kuno M and Kamat P.

  6. Ferroelectric phase transitions in multiferroic Ge1-xMnxTe driven by local lattice distortions

    Czech Academy of Sciences Publication Activity Database

    Kriegner, D.; Furthmüller, J.; Kirchschlager, R.; Endres, J.; Horák, L.; Cejpek, P.; Reichlová, Helena; Martí, Xavier; Primetzhofer, D.; Ney, A.; Bauer, G.; Bechstedt, F.; Holy, V.; Springholz, G.

    2016-01-01

    Roč. 94, č. 5 (2016), 1-8, č. článku 054112. ISSN 2469-9950 Institutional support: RVO:68378271 Keywords : semiconductor Ge 1-x Mn x Te * GeTe * GeMnTe * alloys * heat * Mn Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.836, year: 2016

  7. Te Rita Papesch: Case Study of an Exemplary Learner of Maori as an Additional Language

    Science.gov (United States)

    Ratima, Matiu Tai; Papesch, Te Rita

    2014-01-01

    This paper presents a case study of the life experiences of one exemplar adult second language Maori learner--Te Rita Papesch. Te Rita was one of 17 participants who were interviewed as a part of the first author's PhD study which sought to answer the question: what factors lead to the development of proficiency in te reo Maori amongst adult…

  8. Schottky barrier CdTe(Cl) detectors for planetary missions

    International Nuclear Information System (INIS)

    Eisen, Yosef; Floyd, Samuel

    2002-01-01

    Schottky barrier cadmium telluride (CdTe) radiation detectors of dimensions 2mm x 2mm x 1mm and segmented monolithic 3cm x 3 cm x 1mm are under study at GSFC for future NASA planetary instruments. These instruments will perform x-ray fluorescence spectrometry of the surface and monitor the solar x-ray flux spectrum, the excitation source for the characteristic x-rays emitted from the planetary body. The Near Earth Asteroid Rendezvous (NEAR) mission is the most recent example of such a remote sensing technique. Its x-ray fluorescence detectors were gas proportional counters with a back up Si PIN solar monitor. Analysis of NEAR data has shown the necessity to develop a solar x-ray detector with efficiency extending to 30keV. Proportional counters and Si diodes have low sensitivity above 9keV. Our 2mm x 2mm x 1mm CdTe operating at -30 degree sign C possesses an energy resolution of 250eV FWHM for 55Fe with unit efficiency to up to 30keV. This is an excellent candidate for a solar monitor. Another ramification of the NEAR data is a need to develop a large area detector system, 20-30 cm2, with cosmic ray charged particle rejection, for measuring the characteristic radiation. A 3cm x 3cm x 1mm Schottky CdTe segmented monolithic detector is under investigation for this purpose. A tiling of 2-3 such detectors will result in the desired area. The favorable characteristics of Schottky CdTe detectors, the system design complexities when using CdTe and its adaptation to future missions will be discussed

  9. Characterisation of Redlen high-flux CdZnTe

    Science.gov (United States)

    Thomas, B.; Veale, M. C.; Wilson, M. D.; Seller, P.; Schneider, A.; Iniewski, K.

    2017-12-01

    CdZnTe is a promising material for the current generation of free electron laser light sources and future laser-driven γ-ray sources which require detectors capable of high flux imaging at X-ray and γ-ray energies (> 10 keV) . However, at high fluxes CdZnTe has been shown to polarise due to hole trapping, leading to poor performance. Novel Redlen CdZnTe material with improved hole transport properties has been designed for high flux applications. Small pixel CdZnTe detectors were fabricated by Redlen Technologies and flip-chip bonded to PIXIE ASICs. An XIA Digital Gamma Finder PIXIE-16 system was used to digitise each of the nine analogue signals with a timing resolution of 10 ns. Pulse shape analysis was used to extract the rise times and amplitude of signals. These were measured as a function of applied bias voltage and used to calculate the mobility (μ) and mobility-lifetime (μτ) of electrons and holes in the material for three identical detectors. The measured values of the transport properties of electrons in the high-flux-capable material was lower than previously reported for Redlen CdZnTe material (μeτe ~ 1 × 10-3 cm2V-1 and μe ~ 1000 cm2V-1s-1) while the hole transport properties were found to have improved (μhτh ~ 3 × 10-4 cm2V-1 and μh ~ 100 cm2V-1s-1).

  10. Gamma-ray spectroscopy of 120-130Te nuclei

    International Nuclear Information System (INIS)

    Vanhoy, J.R.; Champine, B.R.; Coleman, R.T.; Crandell, K.A.; Tanyi, J.A.; Hicks, S.F.; Alexander, G.K.; Burkett, P.G.; Burns, M.C.; Collard, C.J.

    2000-01-01

    Complete text of publication follows. Structure of the even 120-130 Te nuclei have been investigated with prompt gamma-ray spectroscopy following the 122-126,nat Te(n,n'γ) reactions and the (α,2nγ) 120,124,126 Te reactions. Gamma-ray excitation functions, angular distributions, γγ-coincidences, and Doppler shifts have been measured. Level schemes have been constructed to approximately 3.3 MeV excitation energy, and spectroscopic information including level spins and parities, branching and multipole-mixing ratios, and lifetimes have been extracted. Three different types of structure are thought to play an important role in these low-lying excitations. These are: collective, two-particle, and 4p-2h intruder excitations. Because there are seven stable even-even Te nuclei, the evolution of these excitation modes over this wide range in neutron number is investigated. Level sequences and transition rates obtained from these measurements are compared to IBM-2 model calculations both with and without intruder-state mixing by Rikovska et al. (1), and to particle-vibrational coupling model calculations by Lopac (2). The IBM-2 model calculations with intruder mixing well reproduce the level energies in the low-mass Te; however, examination of the electromagnetic transition rates reveals that there is no clear improvement in the description of these nuclei by adding the intruder configurations. Additionally, no evidence of the 2 + mixed-symmetry strength is observed in the 2 3 + and 2 4 + levels in these nuclei. The particle-vibration model calculations appear to do a good job describing both the level scheme and the transition rates in the heavier nuclei investigated. (author)

  11. Inteligencias en diferentes enfoques teóricos

    Directory of Open Access Journals (Sweden)

    D'Antoni, Maurizia

    2004-06-01

    Full Text Available El siguiente artículo reflexiona sobre enfoques teóricos que sustentan el estudio de las inteligencias y su pertinencia. Se toman en cuenta dos diferentes enfoques teóricos: el humanismo –tomando en cuenta una de sus recientes reformulaciones- y el cognitivismo, específicamente el aporte de Gardner. Al preguntarse el texto si los conceptos de “inteligencias personales” y “persona autorrealizada” tienen alguna relación teórica, se reseñan y comparan algunas de las principales conclusiones de Abraham Maslow y Howard Gardner. Este artículo es parte del trabajo que se realiza para trazar el marco teórico de un proyecto de extensión para la Universidad Nacional, denominado “Olimpiadas de la Inteligencia Emocional”. En ese mismo ámbito, se reflexiona sobre la orientación teórica de otros estudios latinoamericanos y su validez. The next article is a reflection upon theoretical focuses that sustain the study of intelligence and their pertinence. It explores the perspective of two different theoretical approaches, humanism –taking into account one of the recent reformulations- and cognitivism, in the broadest sense of the term. The text queries whether the concepts of “personal intelligences” and “self realized person” have any theoretical relation, it resumes them and compares some of the principal contributions made by Abraham Maslow and Howard Gardner. This article is part of the work that was undertaken to establish the theoretical guidelines of an extension project by the Universidad Nacional, titled “Emotional Intelligence Olympics”. In the same context, there is a reflection on the theoretical orientation of other latinamerican studies and their validity.

  12. History of HgTe-based photodetectors in Poland

    Science.gov (United States)

    Rogalski, A.

    2010-09-01

    In Poland, the HgCdTe studies began in 1960 at the Institute of Physics, Warsaw University. The material processing laboratory was created by Giriat and later by Dziuba, Gałązka, and others. Bridgman technique with sealed thick wall quartz ampoules was used to grow material suitable for research and experimental devices. Among the first papers published in 1961 and 1963 there were the Polish works devoted to preparation, doping, and electrical properties of HgCdTe. Infrared detector's research and development efforts in Poland were concentrated mostly on uncooled market niche. At the beginning, a modified isothermal vapour phase epitaxy has been used for research and commercial fabrication of photoconductive, photoelectromagnetic and other HgCdTe devices. Bulk growth and liquid phase epitaxy were also used. Recently, the fabrication of infrared devices relies on low temperature epitaxial technique, namely metalorganic vapour phase deposition. At present stage of development, the photoconductive and photoelectromagnetic (PEM) detectors are gradually replaced with photovoltaic devices which offer inherent advantages of no electric or magnetic bias, no heat load and no flicker noise. Potentially, photodiodes offer high performance and very fast response. However, conventional photovoltaic uncooled detectors suffer from low quantum efficiency and very low junction resistance. The problems have been solved with advanced band gap engineered architecture, multiple cell heterojunction devices connected in series, and monolithic integration of the detectors with microoptics. In final part of the paper, the Polish achievements in technology and performance of HgMnTe and HgZnTe photodetectors are presented.

  13. On the electronic structure and thermoelectric properties of BiTeBr and BiTeI single crystals and of BiTeI with the addition of BiI3 and CuI

    International Nuclear Information System (INIS)

    Kulbachinskii, Vladimir A.; Kytin, Vladimir G.; Kudryashov, Alexey A.; Kuznetsov, Alexei N.; Shevelkov, Andrei V.

    2012-01-01

    The electronic structures were calculated for BiTeBr and BiTeI using the density-functional theory approach and accounting for the strong spin–orbital interaction. Qualitatively, the band structures for two compounds are similar, showing strong mixing of the p states of all elements in vicinity of the Fermi level, with the band gaps of 0.595 and 0.478 eV for BiTeBr and BiTeI, respectively. The optimized crystal structures show a tendency for the Bi–X (X=Br, I) bond elongation compared to the Bi–Te one. Both compounds are intrinsic n-type semiconductors but display a metallic-like conductivity coupled to rather large thermopower, which is rationalized within the frames of the acoustic phonons scattering model. Because of larger thermopower BiTeBr exhibits a twice higher thermoelectric figure-of-merit near room temperature, ZT=0.17, compared to BiTeI. The addition of 1 mass% of BiI 3 or CuI to BiTeI decreases the mobility of electrons by two orders of magnitude, leading to significantly lower electrical conductivity, but at the same time effectively reduces the thermal conductivity. The prospects of further enhancing the thermoelectric efficiency are briefly discussed. - Graphical abstract: View of the crystal structure of BiTeBr is shown in the figure The optimized crystal structures show a tendency for the Bi–X (X=Br, I) bond elongation compared to the Bi–Te one. The electronic structures were calculated for BiTeBr and BiTeI using the density-functional theory approach and accounting for the strong spin–orbital interaction. Qualitatively, the band structures for two compounds are similar, showing strong mixing of the p states of all elements in vicinity of the Fermi level, with the band gaps of 0.595 and 0.478 eV for BiTeBr and BiTeI, respectively. Both compounds are intrinsic n-type semiconductors but display a metallic-like conductivity coupled to rather large thermopower, which is rationalized within the frames of the acoustic phonons scattering

  14. Formation of Dense Pore Structure by Te Addition in Bi0.5Sb1.5Te3: An Approach to Minimize Lattice Thermal Conductivity

    Directory of Open Access Journals (Sweden)

    Syed Waqar Hasan

    2013-01-01

    Full Text Available We herein report the electronic and thermal transport properties of p-type Bi0.5Sb1.5Te3 polycrystalline bulks with dense pore structure. Dense pore structure was fabricated by vaporization of residual Te during the pressureless annealing of spark plasma sintered bulks of Te coated Bi0.5Sb1.5Te3 powders. The lattice thermal conductivity was effectively reduced to the value of 0.35 W m−1 K−1 at 300 K mainly due to the phonon scattering by pores, while the power factor was not significantly affected. An enhanced ZT of 1.24 at 300 K was obtained in spark plasma sintered and annealed bulks of 3 wt.% Te coated Bi0.5Sb1.5Te3 by these synergetic effects.

  15. Study of the CdX-B2X3-X (X=S, Se), CdTe-B-Te systems

    International Nuclear Information System (INIS)

    Odin, I.N.; Grin'ko, V.V.; Safronov, E.V.; Kozlovskij, V.F.

    2001-01-01

    Liquidus surfaces of the CdX-B 2 X 3 -X (X=S, Se), CdTe-B-Te systems are plotted for the first time. It is shown that in equilibrium solid solutions on the basis of ternary Cd 2 B 2 X 5 compounds and binary B 2 X 3 , CdX, BS 2 compounds take part with liquid phases. p gen -T and T-x projects of p-T-x phase diagram of B-S (59-100 at. % S), B-Se (59-100 at. % Se), B-Te systems are plotted . B 2 X 3 , BS 2 compounds are formed in that regions of compositions of B-X systems . In the B-Te system compounds are not formed. Ternary compounds are not formed in the CdTe-B-Te system [ru

  16. CASE STUDY: Côte d'Ivoire — From forests to fields in Côte d'Ivoire ...

    International Development Research Centre (IDRC) Digital Library (Canada)

    In Côte d'Ivoire, researchers supported by the International Development ... The key to the "ecosystem approach" is a broader understanding of the role social, cultural, ... on the urban, agricultural, and aquatic components of the local ecosystem. .... Le CRDI soutient la recherche axée sur l'obtention de résultats, qui a des ...

  17. Hydrothermal Synthesis and Mechanism of Unusual Zigzag Ag2Te and Ag2Te/C Core-Shell Nanostructures

    Directory of Open Access Journals (Sweden)

    Saima Manzoor

    2014-01-01

    Full Text Available A single step surfactant-assisted hydrothermal route has been developed for the synthesis of zigzag silver telluride nanowires with diameter of 50–60 nm and length of several tens of micrometers. Silver nitrate (AgNO3 and sodium tellurite (Na2TeO3, are the precursors and polyvinylpyrrolidone (PVP is used as surfactant in the presence of the reducing agent, that is, hydrazine hydrate (N2H4·H2O. In addition to the zigzag nanowires a facile hydrothermal reduction-carbonization route is proposed for the preparation of uniform core-shell Ag2Te/C nanowires. In case of Ag2Te/C synthesis process the same precursors are employed for Ag and Te along with the ethylene glycol used as reducing agent and glucose as the carbonizing agent. Morphological and compositional properties of the prepared products are analyzed with the help of scanning electron microscopy, transmission electron microscopy, and energy dispersive X-ray spectroscopy, respectively. The detailed formation mechanism of the zigzag morphology and reduction-carbonization growth mechanism for core-shell nanowires are illustrated on the bases of experimental results.

  18. Design and investigation of potential Sn-Te-P and Zr-Te-P class of Dirac materials

    Science.gov (United States)

    Sarswat, Prashant; Sarkar, Sayan; Free, Michael

    A motivation of new Dirac materials design and synthesis by perturbing the symmetry, was explored by substitution of a Sn vacancy by P that maintains the intrinsic band inversion at the L point but also the direct bandgap shrinkage upon the incorporation of spin-orbit coupling. In a similar line of investigation, Zr-Te-P was also systematically studied. The synthesis of both Sn-Te-P and Zr-Te-P system of compounds resulted in the formation of long needles type crystals and the bulk porous deposits. The exotic morphology of the P-doped SnTe needles possesses the pierced surface throughout its extension. First principle based calculations were also carried out for these sets of compounds using General Gradient Approximation (GGA) with Perdew-Burke-Ernzerhof (PBE) exchange-correlation functional. In order to ensure structural optimization, a limited memory Broyden-Fletcher-Goldfarb-Shanno (LBFGS) algorithm was employed and the total energy in PBE exchange-correlation functional was considered for the calculation of the formation energy per atom. The new modifications have a potential to establish the new class of Dirac materials ushering upon new frontiers of interest.

  19. CASE STUDY: Côte d'Ivoire — From forests to fields in Côte d'Ivoire ...

    International Development Research Centre (IDRC) Digital Library (Canada)

    2011-01-11

    Jan 11, 2011 ... Some find work in forestry operations or in the thriving fishery that has blossomed on Lac ... Improve the environment, improve health in Côte d'Ivoire ... rates, user protection, and the safe handling and stockpiling of containers.

  20. Fabrication and characterization of the p-type (Bi2Te3)x(Sb2Te3)1 ...

    Indian Academy of Sciences (India)

    electric materials in the composition range x = 0⋅2–0⋅3. (Yang et al 2000), but with improved thermoelectric properties, have been prepared by the zone melting method. The influence of Bi2Te3 content on thermoelectric properties was studied at room temperature. The results showed that the maximum figure of merit ...

  1. Dynamic reconfiguration of van der Waals gaps within GeTe-Sb2Te3 based superlattices

    NARCIS (Netherlands)

    Momand, Jamo; Wang, Ruining; Boschker, Jos E.; Verheijen, Marcel A.; Calarco, Raffaella; Kooi, Bart J.

    2017-01-01

    Phase-change materials based on GeSbTe show unique switchable optoelectronic properties and are an important contender for next-generation non-volatile memories. Moreover, they recently received considerable scientific interest, because it is found that a vacancy ordering process is responsible for

  2. Atomic stacking and van-der-Waals bonding in GeTe-Sb2Te3 superlattices

    NARCIS (Netherlands)

    Momand, J.; Lange, F.R.L.; Wang, R.; Boschker, J.E.; Verheijen, M.A.; Calarco, R.; Wuttig, M.; Kooi, B.J.

    2016-01-01

    GeTe–Sb2Te3 superlattices have attracted major interest in the field of phase-change memories due to their improved properties compared with their mixed counterparts. However, their crystal structure and resistance-switching mechanism are currently not clearly understood. In this work epitaxial

  3. Dynamic reconfiguration of van der Waals gaps within GeTe-Sb2-Te3 based superlattices

    NARCIS (Netherlands)

    Momand, J.; Wang, R.; Boschker, J.E.; Verheijen, M.A.; Calarco, R.; Kooi, B.J.

    2017-01-01

    Phase-change materials based on GeSbTe show unique switchable optoelectronic properties and are an important contender for next-generation non-volatile memories. Moreover, they recently received considerable scientific interest, because it is found that a vacancy ordering process is responsible for

  4. Bridgman growth and assessment of CdTe and CdZnTe using the accelerated crucible rotation technique

    Energy Technology Data Exchange (ETDEWEB)

    Capper, P.; Harris, J.E.; O' Keefe, E.; Jones, C.L.; Ard, C.K.; Mackett, P.; Dutton, D. (Philips Infrared Defence Components, Southampton (United Kingdom))

    1993-01-30

    The Bridgman growth process for CdTe has been extended by applying the accelerated crucible rotation technique (ACRT). Modelling using ACRT has been extended to the 50 mm diameter required to produce grains large enough to yield CdTe(and Cd[sub 0.96]Zn[sub 0.04]Te) slices suitable for use in liquid phase epitaxy of Cd[sub x]Hg[sub 1-x]Te (CMT) layers. Two regimes are identified: ACRT parameter combinations which give maximum fluid velocities and that which maintains stable Ekman flow. Growth of crystals shows that larger single crystal regions are obtained when the Ekman flow is stable. Effects of changing the ampoule base shape have also been investigated. Techniques have been developed to produce 20 mm x 30 mm substrates oriented oriented close to the (111) direction. Assessment of these samples has included IR transmission, IR microscopy, defect etching, X-ray topography and X-ray diffraction curve width measurements. Chemical analyses have been carried out to determine impurity levels and matrix element distributions. Good quality CMT epitaxial layers, as demonstrated by good surface topography, electrical data and chemical analyses, have been grown onto material produced in this study. (orig.).

  5. CdZnTe and CdTe materials for X-ray and gamma ray radiation detector applications

    International Nuclear Information System (INIS)

    Szeles, Csaba

    2004-01-01

    Good detection efficiency and high energy-resolution make Cadmium Zinc Telluride (CdZnTe) and Cadmium Telluride (CdTe) detectors attractive in many room temperature X-ray and gamma-ray detection applications such as medical and industrial imaging, industrial gauging and non-destructive testing, security and monitoring, nuclear safeguards and non-proliferation, and astrophysics. Advancement of the crystal growth and device fabrication technologies and the reduction of bulk, interface and surface defects in the devices are crucial for the widespread practical deployment of Cd 1-x Zn x Te-based detector technology. Here we review the effects of bulk, interface and surface defects on charge transport, charge transport uniformity and device performance and the progress in the crystal growth and device fabrication technologies aiming at reducing the concentration of harmful defects and improving Cd 1-x Zn x Te detector performance. (copyright 2004 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  6. CdTe and CdZnTe detectors behavior in X-ray computed tomography conditions

    CERN Document Server

    Ricq, S; Garcin, M

    2000-01-01

    The application of CdTe and CdZnTe 2D array detectors for medical X-ray Computed Tomography (XCT) is investigated. Different metallic electrodes have been deposited on High-Pressure Bridgman Method CdZnTe and on Traveling Heater Method CdTe:Cl. These detectors are exposed to X-rays in the CT irradiation conditions and are characterized experimentally in current mode. Detectors performances such as sensitivity and response speed are studied. They are correlated with charge trapping and de-trapping. The trapped carrier space charges may influence the injection from the electrodes. This enables one to get information on the nature of the predominant levels involved. The performances achieved are encouraging: dynamic ranges higher than 4 decades and current decreases of 3 decades in 4 ms after X-ray beam cut-off are obtained. Nevertheless, these detectors are still limited by high trap densities responsible for the memory effect that makes them unsuitable for XCT.

  7. Electrical characterization of CdTe grain-boundary properties from as processed CdTe/CdS solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Woods, L.M.; Robinson, G.Y. [Colorado State Univ., Fort Collins, CO (United States); Levi, D.H.; Ahrenkiel, R.K. [National Renewable Energy Lab., Golden, CO (United States); Kaydanov, V. [Colorado School of Mines, Golden, CO (United States)

    1998-09-01

    An ability to liftoff or separate the thin-film polycrystalline CdTe from the CdS, without the use of chemical etches, has enabled direct electrical characterization of the as-processed CdTe near the CdTe/CdS heterointerface. The authors use this ability to understand how a back-contact, nitric-phosphoric (NP) etch affects the grain boundaries throughout the film. Quantitative determination of the grain-boundary barrier potentials and estimates of doping density near the grain perimeter are determined from theoretical fits to measurements of the current vs. temperature. Estimates of the bulk doping are determined from high-frequency resistivity measurements. The light and dark barrier potentials change after the NP etch, and the origin of this change is postulated. Also, a variable doping density within the grains of non-etched material has been determined. These results allow a semi-quantitative grain-boundary band diagram to be drawn that should aid in determining more accurate two-dimensional models for polycrystalline CdTe solar cells.

  8. Strong anharmonicity in the phonon spectra of PbTe and SnTe from first principles

    Science.gov (United States)

    Ribeiro, Guilherme A. S.; Paulatto, Lorenzo; Bianco, Raffaello; Errea, Ion; Mauri, Francesco; Calandra, Matteo

    2018-01-01

    At room temperature, PbTe and SnTe are efficient thermoelectrics with a cubic structure. At low temperature, SnTe undergoes a ferroelectric transition with a critical temperature strongly dependent on the hole concentration, while PbTe is an incipient ferroelectric. By using the stochastic self-consistent harmonic approximation, we investigate the anharmonic phonon spectra and the occurrence of a ferroelectric transition in both systems. We find that vibrational spectra strongly depend on the approximation used for the exchange-correlation kernel in density-functional theory. If gradient corrections and the theoretical volume are employed, then the calculation of the phonon frequencies as obtained from the diagonalization of the free-energy Hessian leads to phonon spectra in good agreement with experimental data for both systems. In PbTe we evaluate the linear thermal expansion coefficient γ =2.3 ×10-5K-1 , finding it to be in good agreement with experimental value of γ =2.04 ×10-5K-1 . Furthermore, we study the phonon spectrum and we do reproduce the transverse optical mode phonon satellite detected in inelastic neutron scattering and the crossing between the transverse optical and the longitudinal acoustic modes along the Γ X direction. The phonon satellite becomes broader at high temperatures but its energy is essentially temperature independent, in agreement with experiments. We decompose the self-consistent harmonic free energy in second-, third-, and fourth-order anharmonic terms. We find that the third- and fourth-order terms are small. However, treating the third-order term perturbatively on top of the second-order self-consistent harmonic free energy overestimates the energy of the satellite associated with the transverse optical mode. On the contrary, a perturbative treatment on top of the harmonic Hamiltonian breaks down and leads to imaginary phonon frequencies already at 300 K. In the case of SnTe, we describe the occurrence of a ferroelectric

  9. Tellurium sulfates from reactions in oleum and sulfur trioxide: syntheses and crystal structures of TeO(SO_4), Te_4O_3(SO_4)_5, and Te(S_2O_7)_2

    International Nuclear Information System (INIS)

    Logemann, Christian; Bruns, Joern; Schindler, Lisa Verena; Zimmermann, Vanessa; Wickleder, Mathias S.

    2015-01-01

    The reaction of K_2TeO_4 with fuming sulfuric acid (65 % SO_3) in sealed glass ampoules at 250 C led to colorless single crystals of TeO(SO_4) [triclinic, P anti 1, Z = 8, a = 819.89(3) pm, b = 836.95(4) pm, c = 1179.12(5) pm, α = 82.820(2) , β = 70.645(2) , γ = 81.897(2) , V = 753.11(6) x 10"6 pm"3]. A horseshoe type [Te_4O_3] fragment is the basic motif in the layer structure of the compound. The [Te_4O_3] moieties are linked to infinite chains by further oxide ions. Monomeric [Te_4O_3] horseshoes are found in the crystal structure of Te_4O_3(SO_4)_5 [trigonal, P3_221, Z = 3, a = 859.05(2) pm, c = 2230.66(7) pm, V = 1425.61(6) x 10"6 pm"3], which was obtained from TeO_2 and fuming sulfuric acid (65 % SO_3) at 200 C as colorless single crystals. By switching to neat SO_3 as reaction medium colorless crystals of Te(S_2O_7)_2 [P2_1/n, Z = 4, a = 1065.25(3) pm, b = 818.50(2) pm, c = 1206.27(3) pm, β = 102.097(1) , V = 1028.40(5) x 10"6 pm"3] form when ortho-telluric acid, H_6TeO_6, is used as the tellurium source. The compound was reported previously, however, obviously with a wrong crystallographic description. In the crystal structure the tellurium atoms are coordinated by two chelating disulfate ions. Further Te-O contacts link the [Te(S_2O_7)_2] units to an extended network. (Copyright copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  10. CdTe and CdZnTe gamma ray detectors for medical and industrial imaging systems

    International Nuclear Information System (INIS)

    Eisen, Y.; Shor, A.; Mardor, I.

    1999-01-01

    CdTe and CdZnTe X-ray and gamma ray detectors in the form of single elements or as segmented monolithic detectors have been shown to be useful in medical and industrial imaging systems. These detectors possess inherently better energy resolution than scintillators coupled to either photodiodes or photomultipliers, and together with application specific integrated circuits they lead to compact imaging systems of enhanced spatial resolution and better contrast resolution. Photopeak efficiencies of these detectors is greatly affected by a relatively low hole mobility-lifetime product. Utilizing these detectors as highly efficient good spectrometers, demands use of techniques to improve their charge collection properties, i.e., correct for variations in charge losses at different depths of interaction in the detector. The corrections for the large hole trapping are made either by applying electronic techniques or by fabricating detector or electrical contacts configurations which differ from the commonly used planar detectors. The following review paper is divided into three parts: The first part discusses detector contact configurations for enhancing photopeak efficiencies and the single carrier collection approach which leads to improved energy resolutions and photopeak efficiencies at high gamma ray energies. The second part demonstrates excellent spectroscopic results using thick CdZnTe segmented monolithic pad and strip detectors showing energy resolutions less than 2% FWHM at 356 keV gamma rays. The third part discusses advantages and disadvantages of CdTe and CdZnTe detectors in imaging systems and describes new developments for medical diagnostics imaging systems

  11. Study and development of new CdTe and CdZnTe detection structures for X and γ imagery

    International Nuclear Information System (INIS)

    Rosaz, M.

    1997-01-01

    The aim of this study is to show the interest of applying cadmium telluride (CdTe) for X- and γ- ray imaging applications, with specific technological (via contact nature) and geometric (via Frisch grids) structures suited for each application. This work is divided into three different but complementary parts: the first part describes a simulation model which allows a better understanding of CdTe based γ- ray detectors. The new feature of this model compared to previous ones, is that it is able to take into account the electric field's non uniform spatial distribution inside the detector s. The results enable us to de-convolute the influence of material and contact parameters on the spectrometric performances (energy resolution and peak/valley ratio) of CdTe based detectors; the second part presents different technological structures deposited upon CdTe, (grown by two different methods, i.e Bridgman and High Pressure Bridgman). These structures were characterised in X- and γ- ray detection; theoretical models are developed which allow a certain insight into the detection properties of each couple (material + contact); the third part deals with new contact geometries which allow a screening effect of the bulk (analogous to the Frisch grid effect in gaseous detectors) resulting in improved energy resolution and peak/valley ratios; encouraging first results on prototypes are presented and discussed. This work has allowed a better understanding of physical behaviour of CdTe based detectors, coupled with advances in technological issues to upgrade the overall performances of these detectors for application in X- and γ- ray imaging. (author)

  12. Structural characterization of two new quaternary chalcogenides: CuCo{sub 2}InTe{sub 4} and CuNi{sub 2}InTe{sub 4}

    Energy Technology Data Exchange (ETDEWEB)

    Delgado, Gerzon E.; Grima-Gallardo, Pedro; Nieves, Luis, E-mail: gerzon@ula.ve [Universidad de Los Andes, Merida (Venezuela, Bolivarian Republic of); Cabrera, Humberto [Centro Multidisciplinario de Ciencias, Instituto Venezolano de Investigaciones Cientificas (IVIC), Merida (Venezuela, Bolivarian Republic of); Glenn, Jennifer R.; Aitken, Jennifer A. [Department of Chemistry and Biochemistry, Duquesne University, Pittsburgh, PA (United States)

    2016-11-15

    The crystal structure of the chalcogenide compounds CuCo{sub 2}InTe{sub 4} and CuNi{sub 2}InTe{sub 4} , two new members of the I-II{sub 2}-III-VI{sub 4} family, were characterized by Rietveld refinement using X-ray powder diffraction data. Both materials crystallize in the tetragonal space group I4-bar 2m (No. 121), Z = 2, with a stannite-type structure, with the binaries CoTe and NiTe as secondary phases. (author)

  13. Current state-of-the-art industrial and research applications using room-temperature CdTe and CdZnTe solid state detectors

    International Nuclear Information System (INIS)

    Eisen, Y.

    1996-01-01

    Improvements of CdTe crystal quality and significant progress in the growth of large ingots of high resistivity CdZnTe material enable the fabrication of larger area detectors in single element form or monolithic arrays. These advances allow for the development of imaging devices of improved spatial resolution for industrial, research and medical applications. CdTe and CdZnTe detectors operate in single photon counting mode or in current mode (charge integrating mode). The paper presents advantages of CdTe and CdZnTe over common scintillator type detectors, but also presents the shortcomings of the former detectors with respect to charge collection which limit the yields of good spectrometers. The paper reviews industrial and research applications utilizing these detectors and in particular describes in detail two imaging systems for security screening and custom inspection. These systems are characterized by large dynamic range and good spatial resolution and are composed of large arrays of CdTe spectrometers and discriminator grade detectors. A wide energy range detector assembly, for astrophysical research of gamma ray bursts composed of CdTe, HgI 2 and CdZnTe spectrometers in two dimensional arrays is also presented. (orig.)

  14. High Flux Energy-Resolved Photon-Counting X-Ray Imaging Arrays with CdTe and CdZnTe for Clinical CT

    International Nuclear Information System (INIS)

    Barber, William C.; Hartsough, Neal E.; Gandhi, Thulasidharan; Iwanczyk, Jan S.; Wessel, Jan C.; Nygard, Einar; Malakhov, Nail; Wawrzyniak, Gregor; Dorholt, Ole; Danielsen, Roar

    2013-06-01

    We have fabricated fast room-temperature energy dispersive photon counting x-ray imaging arrays using pixellated cadmium zinc (CdTe) and cadmium zinc telluride (CdZnTe) semiconductors. We have also fabricated fast application specific integrated circuits (ASICs) with a two dimensional (2D) array of inputs for readout from the CdZnTe sensors. The new CdTe and CdZnTe sensors have a 2D array of pixels with a 0.5 mm pitch and can be tiled in 2D. The new 2D ASICs have four energy discriminators per pixel with a linear energy response across the entire dynamic range for clinical CT. The ASICs can also be tiled in 2D and are designed to fit within the active area of the 2D sensors. We have measured several important performance parameters including; an output count rate (OCR) in excess of 20 million counts per second per square mm, an energy resolution of 7 keV full width at half maximum (FWHM) across the entire dynamic range, and a noise floor less than 20 keV. This is achieved by directly interconnecting the ASIC inputs to the pixels of the CdTE and CdZnTe sensors incurring very little additional capacitance. We present a comparison of the performance of the CdTe and CdZnTe sensors including the OCR, FWHM energy resolution, and noise floor. (authors)

  15. Effect of layer composition on band spectrum of CdxHg1-xTe - CdyHg1-yTe-type superlattices

    International Nuclear Information System (INIS)

    Gerchikov, L.G.; Subashiev, A.V.; Salman Dalla

    1993-01-01

    Evolution of energy spectrum of Cd x Hg 1-x Te -Cd y Hg 1-y Te superlattices at variation of layer composition is considered. Transition from 3 type superlattice to 1 type superlattice occurring for y=0.16 is studied comprehensively. In this case, dependence of the width of superlattice forbidden zone on layer thickness is shown to become more smooth, than in CdTe - HgTe superlattice and it gives more possibilities to use such superlattices for making IR phototransistors. 10 refs., 4 figs

  16. Reformulated tight binding calculation for band discontinuity at CdTe/Hg xCd1-xTe heterointerfaces and their type I-type III transitions

    International Nuclear Information System (INIS)

    Ekpunobi, A.J.

    2005-01-01

    A recently reformulated tight binding method is used to calculate the valence band discontinuity at the CdTe/Hg x Cd 1-x Te interface in the s 2 p 2 configuration. The calculated valence band discontinuity of 0.31 eV at CdTe/HgTe interface is in good agreement with self-consistent calculation and accepted experimental value. Calculations were extended to alloy interfaces, which enabled the investigation of the band-offset problem at the transition point. Both valence band discontinuity ratio and conduction band discontinuity ratio show inflexions at the transition point

  17. Electronic structure of transition metal dichalcogenides PdTe2 and Cu0.05PdTe2 superconductors obtained by angle-resolved photoemission spectroscopy

    International Nuclear Information System (INIS)

    Liu Yan; Zhao Jian-Zhou; Yu Li; Hu Cheng; Liu De-Fa; Peng Ying-Ying; Xie Zhuo-Jin; He Jun-Feng; Chen Chao-Yu; Feng Ya; Yi He-Mian; Liu Xu; Zhao Lin; He Shao-Long; Liu Guo-Dong; Dong Xiao-Li; Zhang Jun; Lin Cheng-Tian; Chen Chuang-Tian; Xu Zu-Yan

    2015-01-01

    The layered transition metal chalcogenides have been a fertile land in solid state physics for many decades. Various MX 2 -type transition metal dichalcogenides, such as WTe 2 , IrTe 2 , and MoS 2 , have triggered great attention recently, either for the discovery of novel phenomena or some extreme or exotic physical properties, or for their potential applications. PdTe 2 is a superconductor in the class of transition metal dichalcogenides, and superconductivity is enhanced in its Cu-intercalated form, Cu 0.05 PdTe 2 . It is important to study the electronic structures of PdTe 2 and its intercalated form in order to explore for new phenomena and physical properties and understand the related superconductivity enhancement mechanism. Here we report systematic high resolution angle-resolved photoemission (ARPES) studies on PdTe 2 and Cu 0.05 PdTe 2 single crystals, combined with the band structure calculations. We present in detail for the first time the complex multi-band Fermi surface topology and densely-arranged band structure of these compounds. By carefully examining the electronic structures of the two systems, we find that Cu-intercalation in PdTe 2 results in electron-doping, which causes the band structure to shift downwards by nearly 16 meV in Cu 0.05 PdTe 2 . Our results lay a foundation for further exploration and investigation on PdTe 2 and related superconductors. (rapid communication)

  18. On the Role of Boron in CdTe and CdZnTe Crystals

    Science.gov (United States)

    Pavesi, M.; Marchini, L.; Zha, M.; Zappettini, A.; Zanichelli, M.; Manfredi, M.

    2011-10-01

    It is well known that group III elements act as donors if they play a substitutional role at the metallic site in II-tellurides; nevertheless, several studies report both on the creation of complexes with vacancies, named A-centers, and on the involvement in self-compensation mechanisms, especially for indium. The boron concentration in II-tellurides is negligible, and its contribution to transport mechanisms has not been studied yet. For the last few years the authors have been developing a new technique to grow CdZnTe by the vertical Bridgman technique, taking advantage of encapsulation by means of boron oxide. In this way, crystals characterized by large single grains, low etch pit density, and high resistivity have been obtained. Recently, x-ray detectors with state-of-the-art performance have been produced from such crystals. Boron contamination, as a consequence of this growth method, is quite low but at least one order of magnitude above values obtained with other growth techniques. Besides being a low-cost technique which is also suitable for large-scale mass production, the encapsulated vertical Bridgman technique is quite useful to prevent dislocations, grain boundaries, and stacking faults; for these reasons, careful characterization was performed to understand the effect of boron both on the electrical properties and on the spectroscopic performance of the final crystals. Our characterization is mainly based on low-temperature photoluminescence in addition to electrical current-voltage measurements, photostimulated current, and x-ray spectroscopy. The results indicate that boron behaves like other group III elements; in fact, boron forms a complex that does not affect the good performance of our x-ray detectors, even if it shows some properties which are typical of A-centers.

  19. The crystal structure of TeCl3+AuCl4-

    International Nuclear Information System (INIS)

    Jones, P.G.; Jentsch, D.; Schwarzmann, E.

    1986-01-01

    TeCl 3 + AuCl 4 - crystallizes in the triclinic space group Panti 1 with a=7.564(2), b=7.720(3), c=8.964(3) A, α=78.26(3), β=88.84(3), γ=89.35(3) 0 , Z=2. The structure was refined to R 0.041 for 1380 reflections. The cation polyhedron, including secondary Te...Cl interactions, is a square pyramid with mean Te-Cl 2.294, Te...Cl 3.028 A. The secondary interactions link the ions to form centrosymmetric (TeCl 3 .AuCl 4 ) 2 dimers. (orig.)

  20. Low-Cost Lattice Matching Si Based Composite Substrates for HgCdTe

    Science.gov (United States)

    2013-09-01

    211). ..............................................5 Figure 3. Relationship between calculated alloy compositions based on Se/CdTe BEP ratio and...Se:CdTe beam equivalent pressure ( BEP ) ratios. During CdSeTe growth, Se and Te are in competition for the same nucleation sites. If we assume that all...therefore, x(cal) = ΦSe/ΦCd = 2ΦSe/ΦCdTe, where Φ is the BEP of the material, measured by the nude ion gauge at the substrate position. Figure 3 shows the

  1. Lattice thermal transport in group II-alloyed PbTe

    Science.gov (United States)

    Xia, Yi; Hodges, James M.; Kanatzidis, Mercouri G.; Chan, Maria K. Y.

    2018-04-01

    PbTe, one of the most promising thermoelectric materials, has recently demonstrated a thermoelectric figure of merit (ZT) of above 2.0 when alloyed with group II elements. The improvements are due mainly to significant reduction of lattice thermal conductivity (κl), which was in turn attributed to nanoparticle precipitates. However, a fundamental understanding of various phonon scattering mechanisms within the bulk alloy is still lacking. In this work, we apply the newly-developed density-functional-theory-based compressive sensing lattice dynamics approach to model lattice heat transport in PbTe, MTe, and Pb0.94M0.06Te (M = Mg, Ca, Sr, and Ba) and compare our results with experimental measurements, with focus on the strain effect and mass disorder scattering. We find that (1) CaTe, SrTe, and BaTe in the rock-salt structure exhibit much higher κl than PbTe, while MgTe in the same structure shows anomalously low κl; (2) lattice heat transport of PbTe is extremely sensitive to static strain induced by alloying atoms in solid solution form; (3) mass disorder scattering plays a major role in reducing κl for Mg/Ca/Sr-alloyed PbTe through strongly suppressing the lifetimes of intermediate- and high-frequency phonons, while for Ba-alloyed PbTe, precipitated nanoparticles are also important.

  2. Te/Pt nanonetwork modified carbon fiber microelectrodes for methanol oxidation

    International Nuclear Information System (INIS)

    Tsai, Hsiang-Yu; Shih, Zih-Yu; Lin, Zong-Hong; Chang, Huan-Tsung

    2013-01-01

    Te/Pt nanonetwork-decorated carbon fiber microelectrodes (CFMEs) have been fabricated and employed as anodic catalysts in a direct methanol fuel cell (DMFC). Te nanowires were prepared from tellurite ions (TeO 3 2− ) through a seed-mediated growth process and were deposited onto CFMEs to form three-dimensional Te nanonetworks. The Te nanonetworks then acted as a framework and reducing agent to reduce PtCl 6 2− ions to form Te/Pt through a galvanic replacement reaction, leading to the formation of Te/PtCFMEs. By controlling the reaction time, the amount of Pt and morphology of Te/Pt nanonetworks were controlled, leading to various degrees of electrocatalytic activity. The Te/PtCFMEs provide a high electrochemical active surface area (129.2 m 2 g −1 ), good catalytic activity (1.2 A mg −1 ), high current density (20.0 mA cm −2 ), long durability, and tolerance toward the poisoning species for methanol oxidation in 0.5 M sulfuric acid containing 1 M methanol. We have further demonstrated an enhanced current density by separately using 3 and 5 Te/PtCFMEs. Our results show that the low-cost, stable, and effective Te/PtCFMEs have great potential in the fabrication of cost-effective fuel cells. (paper)

  3. On atomic mechanisms governing the oxidation of Bi2Te3

    Science.gov (United States)

    Music, Denis; Chang, Keke; Schmidt, Paul; Braun, Felix N.; Heller, Martin; Hermsen, Steffen; Pöllmann, Peter J.; Schulzendorff, Till; Wagner, Cedric

    2017-12-01

    Oxidation of Bi2Te3 (space group R \\overline{3} m) has been investigated using experimental and theoretical means. Based on calorimetry, x-ray photoelectron spectroscopy and thermodynamic modelling, Bi2Te3 is at equilibrium with Bi2O3 and TeO2, whereby the most stable compound is Bi2Te3, followed by Bi2O3. The reactivity of Bi towards oxygen is expected to be higher than that of Te. This notion is supported by density functional theory. The strongest bond is formed between Bi and Te, followed by Bi-O. This gives rise to unanticipated atomic processes. Dissociatively adsorbed oxygen diffuses through Bi and Te basal planes of Bi2Te3(0 0 0 1) and preferably interacts with Bi. The Te termination considerably retards this process. These findings may clarify conflicting literature data. Any basal plane off-cut or Bi terminations trigger oxidation, but a perfect basal cleavage, where only Te terminations are exposed to air, may be stable for a longer period of time. These results are of relevance for applications in which surfaces are of key importance, such as nanostructured Bi2Te3 thermoelectric devices.

  4. HIGH SPATIAL-RESOLUTION IMAGING OF TE INCLUSIONS IN CZT MATERIAL

    International Nuclear Information System (INIS)

    CAMARDA, G.S.; BOLOTNIKOV, A.E.; CARINI, G.A.; CUI, Y.; KOHMAN, K.T.; LI, L.; JAMES, R.B.

    2006-01-01

    We present new results from our studies of defects in current single-crystal CdZnTe material. Our previous measurements, carried out on thin (∼1 mm) and long (>12 mm) CZT detectors, indicated that small (1-20 (micro)m) Te inclusions can significantly degrade the device's energy resolution and detection efficiency. We are conducting detailed studies of the effects of Te inclusions by employing different characterization techniques with better spatial resolution, such as quantitative fluorescence mapping, X-ray micro-diffraction, and TEM. Also, IR microscopy and gamma-mapping with pulse-shape analysis with higher spatial resolution generated more accurate results in the areas surrounding the micro-defects (Te inclusions). Our results reveal how the performance of CdZnTe detectors is influenced by Te inclusions, such as their spatial distribution, concentration, and size. We also discuss a model of charge transport through areas populated with Te inclusions

  5. GeTe sequences in superlattice phase change memories and their electrical characteristics

    Energy Technology Data Exchange (ETDEWEB)

    Ohyanagi, T., E-mail: ohyanagi@leap.or.jp; Kitamura, M.; Takaura, N. [Low-Power Electronics Association and Projects (LEAP), Onogawa 16-1, Tsukuba, Ibaraki 305-8569 (Japan); Araidai, M. [Department of Computational Science and Engineering, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan); Kato, S. [Graduate School of Pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8571 (Japan); Shiraishi, K. [Department of Computational Science and Engineering, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan); Graduate School of Pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8571 (Japan)

    2014-06-23

    We studied GeTe structures in superlattice phase change memories (superlattice PCMs) with a [GeTe/Sb{sub 2}Te{sub 3}] stacked structure by X-ray diffraction (XRD) analysis. We examined the electrical characteristics of superlattice PCMs with films deposited at different temperatures. It was found that XRD spectra differed between the films deposited at 200 °C and 240 °C; the differences corresponded to the differences in the GeTe sequences in the films. We applied first-principles calculations to calculate the total energy of three different GeTe sequences. The results showed the Ge-Te-Ge-Te sequence had the lowest total energy of the three and it was found that with this sequence the superlattice PCMs did not run.

  6. Mass-spectrometric and optimal study of products from the laser ablated PbTe(Ga)

    International Nuclear Information System (INIS)

    Mikhajlov, V.A.; Putilin, F.N.; Trubnikov, D.N.

    1994-01-01

    The products of evaporation (p=10 -7 Torr) of a PbTe(Ga) target ablated by the Nd 3+ : YA laser (λ=1.08 μm, τ=15 ns, w=0.47-4.8 Jxcm -2 ) have been studied using quadrupole mass spectrometry and optical spectroscopy. The neutral Pb, Te, Ga, Te 2 , PbTe and the singly charged ions of Pb, Te, Ga have been detected by mass spectrometry. The lines of Pb 1 , Pb 2 , Te 2 and Ga 1 have been observed in the region of 340-760 nm of the emission spectra, the lines of Pb 3 and Te 3 were absent. The kinetic energy of the ions has been estimated using the ion optics system decelerated and focused ions with the selected energy

  7. Defect complexes formed with Ag atoms in CDTE, ZnTe, and ZnSe

    CERN Document Server

    Wolf, H; Ostheimer, V; Hamann, J; Lany, S; Wichert, T

    2000-01-01

    Using the radioactive acceptor $^{111}\\!$Ag for perturbed $\\gamma$-$\\gamma$-angular correlation (PAC) spectroscopy for the first time, defect complexes formed with Ag are investigated in the II-VI semiconductors CdTe, ZnTe and ZnSe. The donors In, Br and the Te-vacancy were found to passivate Ag acceptors in CdTe via pair formation, which was also observed in In-doped ZnTe. In undoped or Sb-doped CdTe and in undoped ZnSe, the PAC experiments indicate the compensation of Ag acceptors by the formation of double broken bond centres, which are characterised by an electric field gradient with an asymmetry parameter close to h = 1. Additionally, a very large electric field gradient was observed in CdTe, which is possibly connected with residual impurities.

  8. Structure of glasses of the TeO2-MoO3 system

    International Nuclear Information System (INIS)

    Dimitriev, Y.; Dimitrov, V.; Bart, J.C.J.

    1981-01-01

    Structural models for glasses of the TeO 2 -MoO 3 system are suggested. On the basis of X-ray and infrared spectral investigations, by comparing with known crystalline structures of TeO 2 , MoO 3 and Te 2 MoO 7 9t 2 M, it is shown that the glasses from TeO 2 to Te 2 MoO 7 possess [TeO 4 ] and [MoO 5 ] groups as basic structural units. The latter are connected to form [Mo 2 O 8 ] complexes. The glasses in the MoO 3 -rich compositional range are built up of [TeO 3 ] and [MoO 6 ] polyhedra. The glass-formation tendency is discussed in relation to the role of the free electron pair and the disruption of secondary and weak primary bonds in the crystals. (author)

  9. Syntheses and crystal structures of BaAgTbS{sub 3}, BaCuGdTe{sub 3}, BaCuTbTe{sub 3}, BaAgTbTe{sub 3}, and CsAgUTe{sub 3}

    Energy Technology Data Exchange (ETDEWEB)

    Prakash, Jai; Beard, Jessica C.; Ibers, James A. [Department of Chemistry, Northwestern University, 2145 Sheridan Road, Evanston, IL 60208-3113 (United States); Mesbah, Adel [Department of Chemistry, Northwestern University, 2145 Sheridan Road, Evanston, IL 60208-3113 (United States); ICSM-UMR 5257 CNRS/CEA/UM2/ENSCM, Bat 426, BP 17171, 30207 Bagnols/Ceze (France)

    2015-06-15

    Five new quaternary chalcogenides of the 1113 family, namely BaAgTbS{sub 3}, BaCuGdTe{sub 3}, BaCuTbTe{sub 3}, BaAgTbTe{sub 3}, and CsAgUTe{sub 3}, were synthesized by the reactions of the elements at 1173-1273 K. For CsAgUTe{sub 3} CsCl flux was used. Their crystal structures were determined by single-crystal X-ray diffraction studies. The sulfide BaAgTbS{sub 3} crystallizes in the BaAgErS{sub 3} structure type in the monoclinic space group C{sup 3},{sub 2h}-C2/m, whereas the tellurides BaCuGdTe{sub 3}, BaCuTbTe{sub 3}, BaAgTbTe{sub 3}, and CsAgUTe{sub 3} crystallize in the KCuZrS{sub 3} structure type in the orthorhombic space group D{sup 1},{sub 2}{sup 7},{sub h}-Cmcm. The BaAgTbS{sub 3} structure consists of edge-sharing [TbS{sub 6}{sup 9-}] octahedra and [AgS{sub 5}{sup 9-}] trigonal pyramids. The connectivity of these polyhedra creates channels that are occupied by Ba atoms. The telluride structure features {sup 2}{sub ∞}[MLnTe{sub 3}{sup 2-}] layers for BaCuGdTe{sub 3}, BaCuTbTe{sub 3}, BaAgTbTe{sub 3}, and {sup 2}{sub ∞}[AgUTe{sub 3}{sup 1-}] layers for CsAgUTe{sub 3}. These layers comprise [MTe{sub 4}] tetrahedra and [LnTe{sub 6}] or [UTe{sub 6}] octahedra. Ba or Cs atoms separate these layers. As there are no short Q..Q (Q = S or Te) interactions these compounds achieve charge balance as Ba{sup 2+}M{sup +}Ln{sup 3+}(Q{sup 2-}){sub 3} (Q = S and Te) and Cs{sup +}Ag{sup +}U{sup 4+}(Te{sup 2-}){sub 3}. (Copyright copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  10. Effect of surface treatment of thermoelectric materials on the properties of thermoelements made from solid solutions of Bi2Te3-Bi2Se3 and Bi2Te3-Sb2Te3 systems

    International Nuclear Information System (INIS)

    Alieva, T.D.; Abdinov, D.Sh.; Salaev, Eh.Yu.

    1981-01-01

    Effect of surface treatment technology of samples of solid solutions of Ei 2 Te 3 -Bi 2 Se 3 and Bi 2 Te 3 -Sb 2 Te 3 systems on their thermoelectric efficiency is studied. Branches of thermoelements have been produced with the help of electroerosion or mechanical cutting of monocrystal ingots of semiconducting solid Bi 2 Te 3 -base solutions. It is shown that in case of the treatment of side surfaces of branches of thermoelements produced of monocrystals of Bi 2 Te 3 base solid solutions their thermoelectrical efficiency grows considerably. Maximum growth of efficiency (approximately 20%) is observed during mechanical grinding of branches surfaces with diamond paste with the following chemical or electrochemical etching [ru

  11. Nb/sub 2/Te/sub 2/O/sub 9/ and Ta/sub 2/Te/sub 2/O/sub 9/: Two new mixed oxides of Te(IV)

    International Nuclear Information System (INIS)

    Gaitan, M.; Jerez, A.; Pico, C.; Veiga, M.L.

    1987-01-01

    Nb/sub 2/Te/sub 2/O/sub 9/ and Ta/sub 2/Te/sub 2/O/sub 9/ were prepared by solid state reactions between amorphous TeO/sub 3/(s) and metallic pentoxides of Nb and Ta. A crystallographic analysis carried out by X-ray diffraction showed that these compounds are isostructural (space group: P2/sub 1//C. a = 6.883 A, b = 7.853 A, c = 14.591 A, β = 103.66 for Nb/sub 2/Te/sub 2/O/sub 9/ and a = 7.10 A, b = 7.48 A, c = 14.62 A, β = 102.9 for Ta/sub 2/Te/sub 2/O/sub 9/). The IR spectra and thermal decomposition processes of both mixed oxides were studied

  12. Numerical Analysis of Novel Back Surface Field for High Efficiency Ultrathin CdTe Solar Cells

    Directory of Open Access Journals (Sweden)

    M. A. Matin

    2013-01-01

    Full Text Available This paper numerically explores the possibility of high efficiency, ultrathin, and stable CdTe cells with different back surface field (BSF using well accepted simulator AMPS-1D (analysis of microelectronics and photonic structures. A modified structure of CdTe based PV cell SnO2/Zn2SnO4/CdS/CdTe/BSF/BC has been proposed over reference structure SnO2/Zn2SnO4/CdS/CdTe/Cu. Both higher bandgap materials like ZnTe and Cu2Te and low bandgap materials like As2Te3 and Sb2Te3 have been used as BSF to reduce minority carrier recombination loss at the back contact in ultra-thin CdTe cells. In this analysis the highest conversion efficiency of CdTe based PV cell without BSF has been found to be around 17% using CdTe absorber thickness of 5 μm. However, the proposed structures with different BSF have shown acceptable efficiencies with an ultra-thin CdTe absorber of only 0.6 μm. The proposed structure with As2Te3 BSF showed the highest conversion efficiency of 20.8% ( V,  mA/cm2, and . Moreover, the proposed structures have shown improved stability in most extents, as it was found that the cells have relatively lower negative temperature coefficient. However, the cell with ZnTe BSF has shown better overall stability than other proposed cells with temperature coefficient (TC of −0.3%/°C.

  13. RelocaTE2: a high resolution transposable element insertion site mapping tool for population resequencing

    Directory of Open Access Journals (Sweden)

    Jinfeng Chen

    2017-01-01

    Full Text Available Background Transposable element (TE polymorphisms are important components of population genetic variation. The functional impacts of TEs in gene regulation and generating genetic diversity have been observed in multiple species, but the frequency and magnitude of TE variation is under appreciated. Inexpensive and deep sequencing technology has made it affordable to apply population genetic methods to whole genomes with methods that identify single nucleotide and insertion/deletion polymorphisms. However, identifying TE polymorphisms, particularly transposition events or non-reference insertion sites can be challenging due to the repetitive nature of these sequences, which hamper both the sensitivity and specificity of analysis tools. Methods We have developed the tool RelocaTE2 for identification of TE insertion sites at high sensitivity and specificity. RelocaTE2 searches for known TE sequences in whole genome sequencing reads from second generation sequencing platforms such as Illumina. These sequence reads are used as seeds to pinpoint chromosome locations where TEs have transposed. RelocaTE2 detects target site duplication (TSD of TE insertions allowing it to report TE polymorphism loci with single base pair precision. Results and Discussion The performance of RelocaTE2 is evaluated using both simulated and real sequence data. RelocaTE2 demonstrate high level of sensitivity and specificity, particularly when the sequence coverage is not shallow. In comparison to other tools tested, RelocaTE2 achieves the best balance between sensitivity and specificity. In particular, RelocaTE2 performs best in prediction of TSDs for TE insertions. Even in highly repetitive regions, such as those tested on rice chromosome 4, RelocaTE2 is able to report up to 95% of simulated TE insertions with less than 0.1% false positive rate using 10-fold genome coverage resequencing data. RelocaTE2 provides a robust solution to identify TE insertion sites and can be

  14. TeV electron measurement with CREST experiment

    Science.gov (United States)

    Park, Nahee; Anderson, T.; Bower, C.; Coutu, S.; Gennaro, J.; Geske, M.; Muller, D.; Musser, J.; Nutter, S.

    CREST, the Cosmic Ray Electron Synchrotron Telescope is a balloon-borne experiment de-signed to measure the spectrum of multi-TeV electrons by the detection of the x-ray synchrotron photons generated in the magnetic field of the Earth. Electrons in the TeV range are expected to reflect the properties of local sources because fluxes from remote locations are suppressed by radiative losses during propagation. Since CREST needs to intersect only a portion of the kilometers-long trail of photons generated by the high-energy electron, the method yields a larger effective area than the physical size of the detector, boosting detection areas. The in-strument is composed of an array of 1024 BaF2 crystals and a set of scintillating veto counters. A long duration balloon flight in Antarctica is currently planned for the 2010-11 season.

  15. Measurement of Cosmic-Ray TeV Electrons

    Science.gov (United States)

    Schubnell, Michael; Anderson, T.; Bower, C.; Coutu, S.; Gennaro, J.; Geske, M.; Mueller, D.; Musser, J.; Nutter, S.; Park, N.; Tarle, G.; Wakely, S.

    2011-09-01

    The Cosmic Ray Electron Synchrotron Telescope (CREST) high-altitude balloon experiment is a pathfinding effort to detect for the first time multi-TeV cosmic-ray electrons. At these energies distant sources will not contribute to the local electron spectrum due to the strong energy losses of the electrons and thus TeV observations will reflect the distribution and abundance of nearby acceleration sites. CREST will detect electrons indirectly by measuring the characteristic synchrotron photons generated in the Earth's magnetic field. The instrument consist of an array of 1024 BaF2 crystals viewed by photomultiplier tubes surrounded by a hermetic scintillator shield. Since the primary electron itself need not traverse the payload, an effective detection area is achieved that is several times the nominal 6.4 m2 instrument. CREST is scheduled to fly in a long duration circumpolar orbit over Antarctica during the 2011-12 season.

  16. Aspectos teóricos acerca del empresario

    Directory of Open Access Journals (Sweden)

    Javier Montes Calderón

    2015-05-01

    Full Text Available RESUMEN Complementando la línea de pensamiento de Cole podríamos decir que el empresario ha sido históricamente la figura central del desenvolvimiento económico por lo menos desde el siglo XVIII. Los elementos teóricos que a continuación se exponen constituyen un primer punto  de partida para la configuración de marcos teóricos que desde diferentes enfoques, funciones como la base fundamental para realizar el estudio del “perfil del empresario general”. Su importancia reside en el hecho de que estas categorías de análisis continúan orientando universalmente estudios sobre el empresario, que a pesar del carácter corporativo que viene asumiendo el empresario moderno, continúa siendo en buena medida el protagonista individual del desarrollo económico contemporáneo.

  17. W-Band Circularly Polarized TE11 Mode Transducer

    Science.gov (United States)

    Zhan, Mingzhou; He, Wangdong; Wang, Lei

    2018-06-01

    This paper presents a balanced sidewall exciting approach to realize the circularly polarized TE11 mode transducer. We used a voltage vector transfer matrix to establish the relationship between input and output vectors, then we analyzed amplitude and phase errors to estimate the isolation of degenerate mode. A mode transducer with a sidewall exciter was designed based on the results. In the 88-100 GHz frequency range, the simulated axial ratio is less than 1.05 and the isolation of linearly polarization TE11 mode is higher than 30 dBc. In back-to-back measurements, the return loss is generally greater than 20 dB with a typical insertion loss of 1.2 dB. Back-to-back transmission measurements are in excellent agreement with simulations.

  18. Performance of prototype segmented CdZnTe arrays

    International Nuclear Information System (INIS)

    Parsons, A.; Palmer, D.M.; Kurczynski, P.; Barbier, L.; Barthelmy, S.; Bartlett, L.; Gehrels, N.; Krizmanic, J.; Stahle, C.M.; Tueller, J.; Teegarden, B.

    1998-01-01

    The Burst and All Sky Imaging Survey (BASIS) is a proposed mission to provide ∼3 arc second locations of approximately 90 Gamma-Ray Bursts (GRBs) per year. The BASIS coded aperture imaging system requires a segmented detector plane able to detect the interaction position of (10--150 keV) photons to less than 100 microm. To develop prototype detector arrays with such fine position resolution the authors have fabricated many 15 mm x 15 mm x 2 mm 100 microm pitch CdZnTe strip detectors. They have assembled these fine pitch CdZnTe strip detectors into prototype 2 x 2 and 6 x 6 element arrays read out by ASIC electronics. The assembly and electronics readout of the 6 x 6 flight prototype array will be discussed, and preliminary data illustrating the uniformity and efficiency of the array will be presented

  19. Investigation of transport properties of FeTe compound

    Science.gov (United States)

    Lodhi, Pavitra Devi; Solanki, Neha; Choudhary, K. K.; Kaurav, Netram

    2018-05-01

    Transport properties of FeTe parent compound has been investigated by measurements of electrical resistivity, magnetic susceptibility and Seebeck coefficient. The sample was synthesized through a standard solid state reaction route via vacuum encapsulation and characterized by x-ray diffraction, which indicated a tetragonal phase with space group P4/nmm. The parent FeTe compound does not exhibit superconductivity but shows an anomaly in the resistivity measurement at around 67 K, which corresponds to a structural phase transition along with in the vicinity of a magnetic phase transition. In the low temperature regime, Seebeck coefficient, S(T), exhibited an anomalous dip feature and negative throughout the temperature range, indicating electron-like charge carrier conduction mechanism.

  20. Current simulation of symmetric contacts on CdTe

    International Nuclear Information System (INIS)

    Ruzin, A.

    2011-01-01

    This article presents the calculated current-voltage characteristics of symmetric Metal-Semiconductor-Metal configurations for Schottky, Ohmic, and injecting-Ohmic contacts on high resistivity CdTe. The results clearly demonstrate that in the wide band-gap, semi-insulating semiconductors, such as high resistivity CdTe, the linearity of the I-V curves cannot be considered a proof of the ohmicity of the contacts. It is shown that the linear I-V curves are expected for a wide range of contact barriers. Furthermore, the slope of these linear curves is governed by the barrier height, rather than the bulk doping concentration. Therefore the deduction of bulk's resistivity from the I-V curves may be false.

  1. Current simulation of symmetric contacts on CdTe

    Energy Technology Data Exchange (ETDEWEB)

    Ruzin, A., E-mail: aruzin@post.tau.ac.il [School of Electrical Engineering, Faculty of Engineering, Tel Aviv University, 69978 Tel Aviv (Israel)

    2011-12-01

    This article presents the calculated current-voltage characteristics of symmetric Metal-Semiconductor-Metal configurations for Schottky, Ohmic, and injecting-Ohmic contacts on high resistivity CdTe. The results clearly demonstrate that in the wide band-gap, semi-insulating semiconductors, such as high resistivity CdTe, the linearity of the I-V curves cannot be considered a proof of the ohmicity of the contacts. It is shown that the linear I-V curves are expected for a wide range of contact barriers. Furthermore, the slope of these linear curves is governed by the barrier height, rather than the bulk doping concentration. Therefore the deduction of bulk's resistivity from the I-V curves may be false.

  2. Reactively sputtered TeOx optical recording media

    International Nuclear Information System (INIS)

    Di Giulio, M.; Manno, D.; Micocci, G.; Rella, R.; Rizzo, A.; Tepore, A.

    1987-01-01

    Telluriom suboxide (TeO x ) thin films have been obtained by R.F. reactive sputtering deposition by using a Te target and an Ar-O 2 gas mixture. This technique of preparation has been shown to be a valid method because it is possible to easily obtain films with desired characteristics by an appropriate selection of the deposition conditions. Different samples were prepared by changing both the R.F. power (80-300 Watt) and the oxygen concentration in the sputtering gas. The films were analyzed in order to study their optical characteristics and the morphology before and after heat treatment. In particular, transmissivity and reflectivity have been found to change markedly by thermal treatment and critical temperatures in the range 120-150 grades centigrade. This property makes these films suitable for optical recording with a low output power laser diode

  3. Holismo nos modelos teóricos de enfermagem

    Directory of Open Access Journals (Sweden)

    David Lopes Neto

    1999-06-01

    Full Text Available Neste estudo bibliográfico analítico apresentamos a classificação de nove modelos teóricos de Enfermagem que abordam o pensamento holístico, segundo as escolas de pensamento das Necessidades Humanas, da Interação e dos Resultados. Com base nas definições de holismo, saúde, cliente e enfermagem analisamos a abordagem holística apresentada pelos seguintes referenciais teóricos: Teoria Ambientalista de Nightingale, Teoria Interpessoal de Peplau, Teoria Filosófica de Hall, Teoria dos Princípios Básicos de Henderson, Teoria do Autocuidado de Orem, Teoria Prescritiva de Wiedenbach, Teoria das Necessidades Humanas Básicas de Horta, Teoria da Adaptação de Roy e Teoria Holística de Levine.

  4. Transport properties in GaTe under hydrostatic pressure

    International Nuclear Information System (INIS)

    Gouskov, L.; Carvalho, M.

    1980-01-01

    First results of the resistivity rho(perpendicular) and rho(parallel)(perpendicular and parallel to the normal to the cleavage plane) under hydrostatic pressure (1 bar <= P <= 3 kbar) on GaTe grown by the Bridgman method, are given and discussed. The analysis of electrical transport properties of GaTe under pressure, indicates a complex nature of the acceptor level in this material. The activation energy Esub(a) has a negative pressure coefficient which is sample dependent. The comparison of the variations of rho(parallel) and rho(perpendicular) versus pressure shows that the activation energy E of the rho(parallel)/rho(perpendicular) ratio has also a negative pressure coefficient which can be justified in the frame of a one-dimensional disorder model proposed by Maschke and Schmid, in order to explain the transport properties in the direction of the normal to the cleavage plane. (author)

  5. Charge transport properties of CdMnTe radiation detectors

    Energy Technology Data Exchange (ETDEWEB)

    Kim K.; Rafiel, R.; Boardman, M.; Reinhard, I.; Sarbutt, A.; Watt, G.; Watt, C.; Uxa, S.; Prokopovich, D.A.; Belas, E.; Bolotnikov, A.E.; James, R.B.

    2012-04-11

    Growth, fabrication and characterization of indium-doped cadmium manganese telluride (CdMnTe)radiation detectors have been described. Alpha-particle spectroscopy measurements and time resolved current transient measurements have yielded an average charge collection efficiency approaching 100 %. Spatially resolved charge collection efficiency maps have been produced for a range of detector bias voltages. Inhomogeneities in the charge transport of the CdMnTe crystals have been associated with chains of tellurium inclusions within the detector bulk. Further, it has been shown that the role of tellurium inclusions in degrading chargecollection is reduced with increasing values of bias voltage. The electron transit time was determined from time of flight measurements. From the dependence of drift velocity on applied electric field the electron mobility was found to be n = (718 55) cm2/Vs at room temperature.

  6. Charge transport properties of CdMnTe radiation detectors

    Directory of Open Access Journals (Sweden)

    Prokopovich D. A.

    2012-10-01

    Full Text Available Growth, fabrication and characterization of indium-doped cadmium manganese telluride (CdMnTe radiation detectors have been described. Alpha-particle spectroscopy measurements and time resolved current transient measurements have yielded an average charge collection efficiency approaching 100 %. Spatially resolved charge collection efficiency maps have been produced for a range of detector bias voltages. Inhomogeneities in the charge transport of the CdMnTe crystals have been associated with chains of tellurium inclusions within the detector bulk. Further, it has been shown that the role of tellurium inclusions in degrading charge collection is reduced with increasing values of bias voltage. The electron drift velocity was calculated from the rise time distribution of the preamplifier output pulses at each measured bias. From the dependence of drift velocity on applied electric field the electron mobility was found to be μn = (718 ± 55 cm2/Vs at room temperature.

  7. GeSbTe deposition for the PRAM application

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Junghyun [Nano Fabrication Center, SAIT, Suwon, P.O. Box 111 (Korea, Republic of); Choi, Sangjoon [Nano Fabrication Center, SAIT, Suwon, P.O. Box 111 (Korea, Republic of); Lee, Changsoo [Nano Fabrication Center, SAIT, Suwon, P.O. Box 111 (Korea, Republic of); Kang, Yoonho [Nano Fabrication Center, SAIT, Suwon, P.O. Box 111 (Korea, Republic of); Kim, Daeil [School of Materials Science and Engineering. University of Ulsan, San 29, Mugeo-Dong, Nam-Gu, Ulsan 680-749 (Korea, Republic of)]. E-mail: dkim84@mail.ulsan.ac.kr

    2007-02-15

    GeSbTe (GST) chalcogenide thin films for the phase-change random access memory (PRAM) were deposited by an atomic layer deposition (ALD) process. New precursors for GST thin films made with an ALD process were synthesized. Among the synthesized precursors, Ge(N(CH{sub 3}){sub 2}){sub 4}, Sb(N(CH{sub 3}){sub 2}){sub 4}, and Te(i-Pr){sub 2} (i-Pr = iso-propyl) were selected. Using the above precursors, GST thin films were deposited using an H{sub 2} plasma-assisted ALD process. Film resistivity abruptly changed after an N{sub 2} annealing process above a temperature of 350 deg. C. Cross-sectional scanning electron microscope (SEM) photographs of the GST films on the patterned substrate with aspect ratio of 7 shows that the step coverage is about 90%.

  8. Prospects for Galactic TeV Neutrino Astronomy

    Energy Technology Data Exchange (ETDEWEB)

    Kistler, Matthew D [Department of Physics, Ohio State University, Columbus, Ohio 43210 (United States)

    2007-03-15

    In just the last few years, the catalog of known Galactic TeV gamma-ray sources has grown dramatically, due to the abilities of current air Cerenkov telescopes to measure both the spectrum and morphology of the TeV emission. While these properties can be very well measured, they are not necessarily sufficient to determine whether the gamma rays are produced by leptonic or hadronic processes. However, if the gamma-ray emission is hadronic, there must be an accompanying flux of neutrinos, which can be determined from the observed gamma-ray spectrum. The upcoming km3 neutrino telescopes will allow for a direct test of the gamma-ray production mechanism and the possibility of examining the highest possible energies, with important consequences for our understanding of Galactic cosmic-ray production.

  9. Prospects for Galactic TeV Neutrino Astronomy

    International Nuclear Information System (INIS)

    Kistler, Matthew D

    2007-01-01

    In just the last few years, the catalog of known Galactic TeV gamma-ray sources has grown dramatically, due to the abilities of current air Cerenkov telescopes to measure both the spectrum and morphology of the TeV emission. While these properties can be very well measured, they are not necessarily sufficient to determine whether the gamma rays are produced by leptonic or hadronic processes. However, if the gamma-ray emission is hadronic, there must be an accompanying flux of neutrinos, which can be determined from the observed gamma-ray spectrum. The upcoming km3 neutrino telescopes will allow for a direct test of the gamma-ray production mechanism and the possibility of examining the highest possible energies, with important consequences for our understanding of Galactic cosmic-ray production

  10. Astroparticle Physics - A Joint TeVPA/ IDM Conference

    CERN Document Server

    2014-01-01

    Astroparticle Physics: a joint IDM/TeVPA event brings together two major international conference series in Astroparticle Physics:Identification of Dark Matter andTeV Particle Astrophysics. We aim to provide the stage for the most recent advances in the booming field of Astroparticle Physics, bringing to Amsterdam - a city that has recently invested a lot into this research area through initiatives like GRAPPA and the D-ITP - leading members of the scientific communities that are contributing to its success. The topics of the conference will include: Cosmic Rays Dark Matter in Cosmology Direct Dark Matter Searches Indirect Dark Matter Searches High Energy Particle Physics Neutrinos High Energy Astrophysics The conference will be held at the Tuschinski Theatre, an extraordinary landmark built in 1921 in the heart of Amsterdam in a spectacular mix of Amsterdam School, Jugendstil, Art Nouveau and Art Deco. The main auditorium, which hosts many premieres of Dutch fi...

  11. Controlling multibunch beam breakup in TeV linear colliders

    International Nuclear Information System (INIS)

    Thompson, K.A.; Ruth, R.D.

    1989-01-01

    To obtain luminosities near 10 34 cm/sup /minus/2/sec/sup /minus/1/ in a TeV linear collider, it will probably be essential to accelerate many bunches per RF fill in order to increase the energy transfer efficiency. In this paper we study the transverse dynamics of multiple bunches in a linac, and we examine the effects of several methods of controlling the beam blow-up that would otherwise be induced by transverse dipole wake fields. The methods we study are: damping the transverse modes, adjusting the frequency of the dominant transverse modes so that bunches may be placed near zero-crossings of the transverse wake, and bunch-to-bunch variation of the transverse focusing. We study the utility of these cures in the main linacs of an example of a TeV collider. 16 refs., 4 figs., 2 tabs

  12. A 90 element CdTe array detector

    Energy Technology Data Exchange (ETDEWEB)

    Iwase, Y.; Onozuka, A.; Ohmori, M. (Nippon Mining Co. Ltd., Toda, Saitama (Japan). Electronic Material and Components Labs.); Funaki, M. (Nippon Mining Co. Ltd., Toda, Saitama (Japan). Materials Development Research Labs.)

    1992-11-15

    The fabrication of a CdTe array radiation detector and its radiation detection characteristics are described. In order to obtain high efficiency of charge collection and realize uniform detection sensitivity, current-voltage characteristics with the combination of large and small barrier height contacts and three kinds of CdTe crystals have been investigated. It was found that the Schottky barrier height of electroless Pt deposition was 0.97 eV, which effectively suppressed electron injection. By using the crystal grown by the travelling heater method with a Cl concentration of 2 ppm, carrier lifetimes for electrons and holes of 1.0 and 0.5 [mu]s, respectively, were achieved. A 90 element array detector exhibited an energy resolution as low as 4.5 keV and a count rate variation of less than 5% for 60 keV [gamma]-rays. (orig.).

  13. A 90 element CdTe array detector

    Science.gov (United States)

    Iwase, Y.; Funaki, M.; Onozuka, A.; Ohmori, M.

    1992-11-01

    The fabrication of a CdTe array radiation detector and its radiation detection characteristics are described. In order to obtain high efficiency of charge collection and realize uniform detection sensitivity, current-voltage characteristics with the combination of large and small barrier height contacts and three kinds of CdTe crystals have been investigated. It was found that the Schottky barrier height of electroless Pt deposition was 0.97 eV, which effectively suppressed electron injection. By using the crystal grown by the travelling heater method with a Cl concentration of 2 ppm, carrier lifetimes for electrons and holes of 1.0 and 0.5 μs, respectively, were achieved. A 90 element array detector exhibited an energy resolution as low as 4.5 keV and a count rate variation of less than 5% for 60 keV γ-rays.

  14. WW + jet at 14 and 100 TeV

    Energy Technology Data Exchange (ETDEWEB)

    Campbell, John [Fermilab; Miller, David [Glasgow U.; Robens, Tania [Dresden, Tech. U.

    2016-11-05

    In the current LHC run, an accurate understanding of Standard Model processes is extremely important. Processes including electroweak gauge bosons serve as standard candles for SM measurements, and equally constitute important backgrounds for Beyond-the-Standard Model (BSM) searches. We present here the next-to-leading order (NLO) QCD virtual contributions to W+W- + jet in an analytic format obtained through unitarity methods. We present results for the full process using the Monte Carlo event generator MCFM, and discuss total as well as differential cross-sections for the LHC with 14 TeV center-of-mass energy, as well as a future 100 TeV proton-proton machine.

  15. Labor Market Distortions in Côte d'Ivoire:

    DEFF Research Database (Denmark)

    Kristensen, Nicolai; Verner, Dorte

    2008-01-01

    This paper investigates the extent and nature of distortions in the labor market in the Republic of Côte d'Ivoire by using quantile regression analysis on employer-employee data from the manufacturing sector. We found that the labor markets in Côte d'Ivoire do not seem to be much distorted. Unions...... may influence employment through tenure but do not seem to influence wages directly except for vulnerable minorities that seem protected by unions. Establishment-size wage effects are pronounced and highest for white-collar workers. This may be explained by the efficiency wage theory, so that, even...... in the absence of unions, segmentation and inefficiencies will still be present as long as firms seek to retain their employees by paying wages above the market clearing level. The inefficiency arising from establishment-size wage effects can be mitigated by education....

  16. Leptogenesis, dark matter and Higgs phenomenology at TeV

    International Nuclear Information System (INIS)

    Gu, P.-H.; Sarkar, Utpal

    2008-01-01

    We propose an interesting model of neutrino masses to realize leptogenesis and dark matter at the TeV scale. A real scalar is introduced to naturally realize the Majorana masses of the right-handed neutrinos. We also include a new Higgs doublet that contributes to the dark matter of the universe. The neutrino masses come from the vacuum expectation value of the triplet Higgs scalar. The right-handed neutrinos are not constrained by the neutrino masses and hence they could generate leptogenesis at the TeV scale without subscribing to resonant leptogenesis. In our model, all new particles could be observable at the forthcoming Large Hardon Collider or the proposed future International Linear Collider

  17. Thermoelectric Response in Single Quintuple Layer Bi2Te3

    KAUST Repository

    Sharma, S.

    2016-10-05

    Because Bi2Te3 belongs to the most important thermoelectric materials, the successful exfoliation of a single quintuple layer has opened access to an interesting two-dimensional material. For this reason, we study the thermoelectric properties of single quintuple layer Bi2Te3 by considering both the electron and phonon transport. On the basis of first-principles density functional theory, the electronic and phononic contributions are calculated by solving Boltzmann transport equations. The dependence of the lattice thermal conductivity on the phonon mean free path is evaluated along with the contributions of the acoustic and optical branches. We find that the thermoelectric response is significantly better for p- than for n-doping. By optimizing the carrier concentration, at 300 K, a ZT value of 0.77 is achieved, which increases to 2.42 at 700 K.

  18. Defect creation rates in CdTe irradiated by electrons

    International Nuclear Information System (INIS)

    Caillot, M.

    1978-01-01

    Up to now, the defect creation rates in CdTe irradiated by electrons were unknown. They have been calculated for different electron kinetic energies. As the samples studied are thick, the energy loss when the electrons penetrate the material has been taken into account. The cross-sections of Cd and Te displacements vs the depth of electron penetration were determined for different electron kinetic energies, and the defect creation rates obtained for each sublattice. These creation rates have been compared with those deduced from experiments and it was found that the experimental creation rates were lower than the calculated ones. This discrepancy can be explained in terms of creation of neutral Frenkel pairs. (Auth.)

  19. Superconductivity in Weyl semimetal candidate MoTe{sub 2}

    Energy Technology Data Exchange (ETDEWEB)

    Qi, Yanpeng; Naumov, Pavel; Rajamathi, Catherine; Barkalov, Oleg; Wu, Shu-Chun; Shekhar, Chandra; Sun, Yan; Suess, Vicky; Schmidt, Marcus; Schwarz, Ulrich; Schnelle, Walter; Felser, Claudia; Medvedev, Sergey [Max Planck Institute for Chemical Physics of Solids, Dresden (Germany); Ali, Mazhar; Cava, Robert [Department of Chemistry, Princeton University, Princeton (United States); Hanfland, Michael [European Synchrotron Radiation Facility, Grenoble (France); Pippel, Eckhard; Werner, Peter; Hillebrand, Reinald; Parkin, Stuart [Max Planck Institute of Microstructure Physics, Halle (Germany); Foerster, Tobias; Kampert, Erik [Dresden High Magnetic Field Laboratory, Dresden (Germany); Yan, Binghai [Max Planck Institute for Chemical Physics of Solids, Dresden (Germany); Max Planck Institute for the Physics of Complex Systems, Dresden (Germany)

    2016-07-01

    In this work, we investigate the sister compound of WTe{sub 2}, MoTe{sub 2}, which is also predicted to be a Weyl semimetal and a quantum spin Hall insulator in bulk and monolayer form, respectively. We find that MoTe{sub 2} exhibits superconductivity with a resistive transition temperature T{sub c} of 0.1 K. The application of a small pressure is shown to dramatically enhance the T{sub c}, with a maximum value of 8.2 K being obtained at 11.7 GPa (a more than 80-fold increase in Tc). This yields a dome-shaped superconducting phase diagram. Further explorations into the nature of the superconductivity in this system may provide insights into the interplay between superconductivity and topological physics.

  20. CdCl2 passivation of polycrystalline CdMgTe and CdZnTe absorbers for tandem photovoltaic cells

    Science.gov (United States)

    Swanson, Drew E.; Reich, Carey; Abbas, Ali; Shimpi, Tushar; Liu, Hanxiao; Ponce, Fernando A.; Walls, John M.; Zhang, Yong-Hang; Metzger, Wyatt K.; Sampath, W. S.; Holman, Zachary C.

    2018-05-01

    As single-junction silicon solar cells approach their theoretical limits, tandems provide the primary path to higher efficiencies. CdTe alloys can be tuned with magnesium (CdMgTe) or zinc (CdZnTe) for ideal tandem pairing with silicon. A II-VI/Si tandem holds the greatest promise for inexpensive, high-efficiency top cells that can be quickly deployed in the market using existing polycrystalline CdTe manufacturing lines combined with mature silicon production lines. Currently, all high efficiency polycrystalline CdTe cells require a chloride-based passivation process to passivate grain boundaries and bulk defects. This research examines the rich chemistry and physics that has historically limited performance when extending Cl treatments to polycrystalline 1.7-eV CdMgTe and CdZnTe absorbers. A combination of transmittance, quantum efficiency, photoluminescence, transmission electron microscopy, and energy-dispersive X-ray spectroscopy clearly reveals that during passivation, Mg segregates and out-diffuses, initially at the grain boundaries but eventually throughout the bulk. CdZnTe exhibits similar Zn segregation behavior; however, the onset and progression is localized to the back of the device. After passivation, CdMgTe and CdZnTe can render a layer that is reduced to predominantly CdTe electro-optical behavior. Contact instabilities caused by inter-diffusion between the layers create additional complications. The results outline critical issues and paths for these materials to be successfully implemented in Si-based tandems and other applications.

  1. Preferential adsorption of volatile hydrocarbons on high surface area chalcogels KMBiTe 3 (M = Cr, Zn, Fe)

    KAUST Repository

    Edhaim, Fatimah; Rothenberger, Alexander

    2017-01-01

    Three chalcogels KCrBiTe3, KZnBiTe3, and KFeBiTe3 were synthesized by the sol–gel metathesis route. K+ and the transition metal cations Cr2+, Zn2+ or Fe2+ connect [BiTe3]3− anions to form amorphous black compounds. Supercritical drying of the black

  2. Metastability and reliability of CdTe solar cells

    Science.gov (United States)

    Guo, Da; Brinkman, Daniel; Shaik, Abdul R.; Ringhofer, Christian; Vasileska, Dragica

    2018-04-01

    Thin-film modules of all technologies often suffer from performance degradation over time. Some of the performance changes are reversible and some are not, which makes deployment, testing, and energy-yield prediction more challenging. Manufacturers devote significant empirical efforts to study these phenomena and to improve semiconductor device stability. Still, understanding the underlying reasons of these instabilities remains clouded due to the lack of ability to characterize materials at atomistic levels and the lack of interpretation from the most fundamental material science. The most commonly alleged causes of metastability in CdTe devices, such as ‘migration of Cu’, have been investigated rigorously over the past fifteen years. Still, the discussion often ended prematurely with stating observed correlations between stress conditions and changes in atomic profiles of impurities or CV doping concentration. Multiple hypotheses suggesting degradation of CdTe solar cell devices due to interaction and evolution of point defects and complexes were proposed, and none of them received strong theoretical or experimental confirmation. It should be noted that atomic impurity profiles in CdTe provide very little intelligence on active doping concentrations. The same elements could form different energy states, which could be either donors or acceptors, depending on their position in crystalline lattice. Defects interact with other extrinsic and intrinsic defects; for example, changing the state of an impurity from an interstitial donor to a substitutional acceptor often is accompanied by generation of a compensating intrinsic interstitial donor defect. Moreover, all defects, intrinsic and extrinsic, interact with the electrical potential and free carriers so that charged defects may drift in the electric field and the local electrical potential affects the formation energy of the point defects. Such complexity of interactions in CdTe makes understanding of temporal

  3. Transplanckian collisions in TeV scale gravity

    CERN Document Server

    Rattazzi, Riccardo

    2004-01-01

    Collisions at transplanckian energies offer model independent tests of TeV scale gravity. One spectacular signal is given by black-hole production, though a full calculation of the corresponding cross- section is not yet available. Another signal is given by gravitational elastic scattering, which may be less spectacular but which can be nicely computed in the forward region using the eikonal approximation. In this talk I discuss the distinctive signatures of eikonalized scattering at future accelerators.

  4. 3.5 TeV : a good start!

    CERN Multimedia

    2009-01-01

    To the pessimists out there, the 3.5 TeV starting energy of the LHC will be like a half-empty glass. However, the thousands of physicists working at the experiments certainly do not share these feelings. On the contrary, they are as excited as ever since they will be the first to observe what happens to matter in these (still) unprecedented conditions.

  5. Investigation of the Photon Strength Function in 130 Te

    Science.gov (United States)

    Isaak, J.; Beller, J.; Fiori, E.; Glorius, J.; Krtička, M.; Löher, B.; Pietralla, N.; Romig, C.; Rusev, G.; Savran, D.; Scheck, M.; Silva, J.; Sonnabend, K.; Tonchev, A. P.; Tornow, W.; Weller, H. R.; Zweidinger, M.

    2016-01-01

    The dipole strength distribution of 130Te was investigated with the method of Nuclear Resonance Fluorescence using continuous-energy bremsstrahlung at the Darmstadt High Intensity Photon Setup and quasi-monoenergetic photons at the High Intensity γ-Ray Source. The average decay properties were determined between 5.50 and 8.15 MeV and compared to simulations within the statistical model.

  6. ReGaTE: Registration of Galaxy Tools in Elixir.

    Science.gov (United States)

    Doppelt-Azeroual, Olivia; Mareuil, Fabien; Deveaud, Eric; Kalaš, Matúš; Soranzo, Nicola; van den Beek, Marius; Grüning, Björn; Ison, Jon; Ménager, Hervé

    2017-06-01

    Bioinformaticians routinely use multiple software tools and data sources in their day-to-day work and have been guided in their choices by a number of cataloguing initiatives. The ELIXIR Tools and Data Services Registry (bio.tools) aims to provide a central information point, independent of any specific scientific scope within bioinformatics or technological implementation. Meanwhile, efforts to integrate bioinformatics software in workbench and workflow environments have accelerated to enable the design, automation, and reproducibility of bioinformatics experiments. One such popular environment is the Galaxy framework, with currently more than 80 publicly available Galaxy servers around the world. In the context of a generic registry for bioinformatics software, such as bio.tools, Galaxy instances constitute a major source of valuable content. Yet there has been, to date, no convenient mechanism to register such services en masse. We present ReGaTE (Registration of Galaxy Tools in Elixir), a software utility that automates the process of registering the services available in a Galaxy instance. This utility uses the BioBlend application program interface to extract service metadata from a Galaxy server, enhance the metadata with the scientific information required by bio.tools, and push it to the registry. ReGaTE provides a fast and convenient way to publish Galaxy services in bio.tools. By doing so, service providers may increase the visibility of their services while enriching the software discovery function that bio.tools provides for its users. The source code of ReGaTE is freely available on Github at https://github.com/C3BI-pasteur-fr/ReGaTE . © The Author 2017. Published by Oxford University Press.

  7. Biblioteca integrada e sociedade referencial teórico

    OpenAIRE

    Tarapanoff, Kira

    1984-01-01

    Referencial teórico para o estudo da biblioteca como organização em relação ao seu meio ambiente imediato, específico e geral. É analisado o componente tecnológico. A biblioteca é vista como um sistema sócio-técnico-estruturado. ______________________________________________________________________________ ABSTRACT A theoretical framework is proposed to study the library as an organization in relation to its immediate, specific and general environments. The technical component is analysed....

  8. Production of black holes in TeV-scale gravity

    International Nuclear Information System (INIS)

    Ringwald, A.

    2002-12-01

    Copious production of microscopic black holes is one of the least model-dependent predictions of TeV-scale gravity scenarios. We review the arguments behind this assertion and discuss opportunities to track the striking associated signatures in the near future. These include searches at neutrino telescopes, such as AMANDA and RICE, at cosmic ray air shower facilities, such as the Pierre Auger Observatory, and at colliders, such as the Large Hadron Collider. (orig.)

  9. Production of black holes in TeV-scale gravity

    International Nuclear Information System (INIS)

    Ringwald, A.

    2003-01-01

    Copious production of microscopic black holes is one of the least model-dependent predictions of TeV-scale gravity scenarios. We review the arguments behind this assertion and discuss opportunities to track the striking associated signatures in the near future. These include searches at neutrino telescopes, such as AMANDA and RICE, at cosmic ray air shower facilities, such as the Pierre Auger Observatory, and at colliders, such as the Large Hadron Collider. (Abstract Copyright [2003], Wiley Periodicals, Inc.)

  10. Electronic and ground state properties of ThTe

    Energy Technology Data Exchange (ETDEWEB)

    Bhardwaj, Purvee, E-mail: purveebhardwaj@gmail.com; Singh, Sadhna, E-mail: drsadhna100@gmail.com [High Pressure Research Lab. Department of Physics Barkatullah University, Bhopal (MP) 462026 (India)

    2016-05-06

    The electronic properties of ThTe in cesium chloride (CsCl, B2) structure are investigated in the present paper. To study the ground state properties of thorium chalcogenide, the first principle calculations have been calculated. The bulk properties, including lattice constant, bulk modulus and its pressure derivative are obtained. The calculated equilibrium structural parameters are in good agreement with the available experimental and theoretical results.

  11. Advanced processing of CdTe pixel radiation detectors

    Science.gov (United States)

    Gädda, A.; Winkler, A.; Ott, J.; Härkönen, J.; Karadzhinova-Ferrer, A.; Koponen, P.; Luukka, P.; Tikkanen, J.; Vähänen, S.

    2017-12-01

    We report a fabrication process of pixel detectors made of bulk cadmium telluride (CdTe) crystals. Prior to processing, the quality and defect density in CdTe material was characterized by infrared (IR) spectroscopy. The semiconductor detector and Flip-Chip (FC) interconnection processing was carried out in the clean room premises of Micronova Nanofabrication Centre in Espoo, Finland. The chip scale processes consist of the aluminum oxide (Al2O3) low temperature thermal Atomic Layer Deposition (ALD), titanium tungsten (TiW) metal sputtering depositions and an electroless Nickel growth. CdTe crystals with the size of 10×10×0.5 mm3 were patterned with several photo-lithography techniques. In this study, gold (Au) was chosen as the material for the wettable Under Bump Metalization (UBM) pads. Indium (In) based solder bumps were grown on PSI46dig read out chips (ROC) having 4160 pixels within an area of 1 cm2. CdTe sensor and ROC were hybridized using a low temperature flip-chip (FC) interconnection technique. The In-Au cold weld bonding connections were successfully connecting both elements. After the processing the detector packages were wire bonded into associated read out electronics. The pixel detectors were tested at the premises of Finnish Radiation Safety Authority (STUK). During the measurement campaign, the modules were tested by exposure to a 137Cs source of 1.5 TBq for 8 minutes. We detected at the room temperature a photopeak at 662 keV with about 2 % energy resolution.

  12. Precision muon detectors in the TeV region

    Energy Technology Data Exchange (ETDEWEB)

    Becker, U.; Chen, M.; Fukushima, M.; Rykaczewski, H.; Ting, S.C.C.; Harris, M.; Wittgenstein, F.; Hofer, H.; Lecomte, P.

    1986-12-15

    We present a design study, based on our experience in the construction of the L3 detector at LEP, of a large solid angle muon detector for a high luminosity (> 10/sup 33/ cm/sup -2//sec) pp collider. It is shown that a resolution of ..delta..M/Mproportional to 1% can be reached for a one TeV particle T->..mu../sup +/..mu../sup -/. Hadron jets can also be measured.

  13. Thermoelectric properties of RuSb2Te ternary skutterudites

    Czech Academy of Sciences Publication Activity Database

    Navrátil, Jiří; Plecháček, T.; Drašar, Č.; Laufek, F.

    2013-01-01

    Roč. 42, č. 7 (2013), s. 1864-1869 ISSN 0361-5235 R&D Projects: GA ČR GAP108/10/1315 Institutional support: RVO:61389013 Keywords : RuSb2Te * ternary skutterudite * doping Subject RIV: CA - Inorganic Chemistry Impact factor: 1.675, year: 2013 http://link.springer.com/article/10.1007/s11664-012-2451-5

  14. Improved HgCdTe detectors with novel antireflection coating

    Science.gov (United States)

    Babu, Sachi R.; Hu, Kelley; Manthripragada, Sridhar; Martineau, Robert J.; Kotecki, C. A.; Peters, F. A.; Burgess, A. S.; Krebs, Danny J.; Mott, David B.; Ewin, Audrey J.; Miles, A.; Nguyen, Trang L.; Shu, Peter K.

    1996-10-01

    The composite infrared spctrometer (CIRS) is an important instrument for the upcoming Cassini mission for sensing infrared (IR) radiation from the Saturanian planetary system. We have delivered a linear, ten element, mercury cadmium telluride (HgCdTe) photoconductive detector array for use on focal plane 3 (FP3), which is responsible for detecting radiation from the 9.1 micrometer to 16.6 micrometer wavelength range. Reliable HgCdTe detectors require robust passivation, a low-stress zinc sulfide (ZnS) anti-reflection (AR) coating with good adhesion, and a proper optical cavity design to smooth out the resonance in the detector spectral response. During the development of CIRS flight array, we have demonstrated the potential of using an in-situ interfacial layer, such as SiN(subscript x), between ZnS and the anodic oxide. Such an interfacial layer drastically improves the adhesion between the ZnS and oxide, without degrading the minority carrier lifetime. We have also demonstrated the feasibility of applying a SiN(subscript x) 'rain coat' layer over the ZnS to prevent moisture and other chemicals from attacking the AR coating, thus improving the long term reliability. This also enables device operation in a hazardous environment. The alumina/epoxy/HgCdTe/oxide/ZnS structure is a complicated multi-cavity optical system. We have developed an extensive device simulation, which enables us to make the optimal choice of individual cavity thickness for minimizing the resonance and maximizing the quantum efficiency. We have also used 0.05 micrometer alumina powder loaded epoxy to minimize the reflections at the epoxy/HgCdTe interface, thus minimizing the resonance.

  15. Thermal conductivity of ZnTe investigated by molecular dynamics

    International Nuclear Information System (INIS)

    Wang Hanfu; Chu Weiguo

    2009-01-01

    The thermal conductivity of ZnTe with zinc-blende structure has been computed by equilibrium molecular dynamics method based on Green-Kubo formalism. A Tersoff's potential is adopted in the simulation to model the atomic interactions. The calculations are performed as a function of temperature up to 800 K. The calculated thermal conductivities are in agreement with the experimental values between 150 K and 300 K, while the results above the room temperature are comparable with the Slack's equation.

  16. Electron-positron physics at 1 TeV

    International Nuclear Information System (INIS)

    Feldman, G.J.

    1988-03-01

    We discuss the motivation for TeV e + e/sup /minus// linear colliders, some aspects of their design, and the experimental consequences that follow from the design. After a brief discussion of the general physics environment, we consider the discovery potential of these colliders by examining three sample processes: the detection of new heavy leptons, standard Higgs bosons, and charged Higgs bosons. 13 refs., 22 figs., 5 tabs

  17. Flat beams in a 50 TeV hadron collider

    International Nuclear Information System (INIS)

    Peggs, S.; Harrison, M.; Pilat, F.; Syphers, M.

    1997-01-01

    The basic beam dynamics of a next generation 50 x 50 TeV hadron collider based on a high field magnet approach have been outlined over the past several years. Radiation damping not only produces small emittances, but also flat beams, just as in electron machines. Based on open-quotes Snowmass 96close quotes parameters, we investigate the issues associated with flat beams in very high energy hadron colliders

  18. Performance characteristics of CdTe drift ring detector

    Science.gov (United States)

    Alruhaili, A.; Sellin, P. J.; Lohstroh, A.; Veeramani, P.; Kazemi, S.; Veale, M. C.; Sawhney, K. J. S.; Kachkanov, V.

    2014-03-01

    CdTe and CdZnTe material is an excellent candidate for the fabrication of high energy X-ray spectroscopic detectors due to their good quantum efficiency and room temperature operation. The main material limitation is associated with the poor charge transport properties of holes. The motivation of this work is to investigate the performance characteristics of a detector fabricated with a drift ring geometry that is insensitive to the transport of holes. The performance of a prototype Ohmic CdTe drift ring detector fabricated by Acrorad with 3 drift rings is reported; measurements include room temperature current voltage characteristics (IV) and spectroscopic performance. The data shows that the energy resolution of the detector is limited by leakage current which is a combination of bulk and surface leakage currents. The energy resolution was studied as a function of incident X-ray position with an X-ray microbeam at the Diamond Light Source. Different ring biasing schemes were investigated and the results show that by increasing the lateral field (i.e. the bias gradient across the rings) the active area, evaluated by the detected count rate, increased significantly.

  19. Phenomenology of NMSSM in TeV scale mirage mediation

    Energy Technology Data Exchange (ETDEWEB)

    Hagimoto, Kei [Department of Physics, Kyushu University,744, Motooka, Nishi-ku, Fukuoka 819-0395 (Japan); Kobayashi, Tatsuo [Department of Physics, Hokkaido University,Kita 10, Nishi 8, Kita-ku, Sapporo 060-0810 (Japan); Makino, Hiroki; Okumura, Ken-ichi [Department of Physics, Kyushu University,744, Motooka, Nishi-ku, Fukuoka 819-0395 (Japan); Shimomura, Takashi [Faculty of Education and Culture, University of Miyazaki,1-1, Gakuen Kibanadai Nishi, Miyazaki 889-2192 (Japan)

    2016-02-15

    We study the next-to-minimal supersymmetric standard model (NMSSM) with the TeV scale mirage mediation, which is known as a solution for the little hierarchy problem in supersymmetry. Our previous study showed that 125 GeV Higgs boson is realized with O(10)% fine-tuning for 1.5 TeV gluino (1 TeV stop) mass. The μ term could be as large as 500 GeV without sacrificing the fine-tuning thanks to a cancellation mechanism. The singlet-doublet mixing is suppressed by tan β. In this paper, we further extend this analysis. We argue that approximate scale symmetries play a role behind the suppression of the singlet-doublet mixing. They reduce the mixing matrix to a simple form that is useful to understand the results of the numerical analysis. We perform a comprehensive analysis of the fine-tuning including the singlet sector by introducing a simple formula for the fine-tuning measure. This shows that the singlet mass of the least fine-tuning is favored by the LEP anomaly for moderate tan β. We also discuss prospects for the precision measurements of the Higgs couplings at LHC and ILC and direct/indirect dark matter searches in the model.

  20. Micro-Raman scattering in ZnTe thin films

    International Nuclear Information System (INIS)

    Larramendi, E. M.; Gutierrez Z-B, K.; Hernandez, E.; Melo, O. de; Berth, G.; Wiedemeier, V.; Lischka, K; Schikora, D.; Woggon, U.

    2008-01-01

    In this work we present micro-raman measurements on ZnTe thin films grown by isothermal closed space sublimation on GaAs(001) substrates in helium and nitrogen atmospheres. Micro-raman spectra were recorded at room temperature using the backscattering geometry (illuminated spot: 3 μm2, 0.3 cm-1 of resolution and the line 532 nm of a DPSSL as power excitation). Up to four order LO-phonon replicas and no peak from TO phonon were observed in the micro-raman spectra as evidence of the epitaxial character and good quality of the films (the TO mode is forbidden according to the selection rules for backscattering along [001] of this heterostructure). The micro-raman spectra also revealed two features at low energy, which have been assigned incorrectly in recent works. We demonstrate that these raman peaks can be associated to the presence of few monolayers of crystalline tellurium or its oxides on the surface of the films. These features were not observed in micro-raman spectra of as grown ZnTe films terminated in a Zn surface. However, they were detected after a prolonged exposure of the samples to air. In addition, it is shown that this effect is accelerated under a high power laser excitation (laser annealing) as used in conventional micro-Raman measurement setups. Preliminary results that suggest the inclusion of nitrogen in ZnTe structure are also shown. (Full text)

  1. LHC Report: First 13TeV collisions

    CERN Multimedia

    Jan Uythoven for the LHC team

    2015-01-01

    On Wednesday 20 May at around 10.30 p.m., protons collided in the LHC at the record-breaking energy of 13 TeV for the first time. These test collisions were to set up various systems and, in particular, the collimators. The tests and the technical adjustments will continue in the coming days.   The CCC was abuzz as the LHC experiments saw 13 TeV collisions.   Preparation for the first physics run at 6.5 TeV per beam has continued in the LHC. This included the set-up and verification of the machine protection systems. In addition, precise measurements of the overall focusing properties of the ring – the so-called “optics” – were performed by inducing oscillations of the bunches, and observing the response over many turns with the beam position monitors (BPM). The transverse beam size in the accelerator changes from the order of a millimetre around most of the circumference down to some tens of microns at the centre of the exper...

  2. Leakage current measurements on pixelated CdZnTe detectors

    International Nuclear Information System (INIS)

    Dirks, B.P.F.; Blondel, C.; Daly, F.; Gevin, O.; Limousin, O.; Lugiez, F.

    2006-01-01

    In the field of the R and D of a new generation hard X-ray cameras for space applications we focus on the use of pixelated CdTe or CdZnTe semiconductor detectors. They are covered with 64 (0.9x0.9 mm 2 ) or 256 (0.5x0.5 mm 2 ) pixels, surrounded by a guard ring and operate in the energy ranging from several keV to 1 MeV, at temperatures between -20 and +20 o C. A critical parameter in the characterisation of these detectors is the leakage current per pixel under polarisation (∼50-500 V/mm). In operation mode each pixel will be read-out by an integrated spectroscopy channel of the multi-channel IDeF-X ASIC currently developed in our lab. The design and functionality of the ASIC depends directly on the direction and value of the current. A dedicated and highly insulating electronics circuit is designed to automatically measure the current in each individual pixel, which is in the order of tens of pico-amperes. Leakage current maps of different CdZnTe detectors of 2 and 6 mm thick and at various temperatures are presented and discussed. Defect density diagnostics have been performed by calculation of the activation energy of the material

  3. Phenomenology of NMSSM in TeV scale mirage mediation

    International Nuclear Information System (INIS)

    Hagimoto, Kei; Kobayashi, Tatsuo; Makino, Hiroki; Okumura, Ken-ichi; Shimomura, Takashi

    2016-01-01

    We study the next-to-minimal supersymmetric standard model (NMSSM) with the TeV scale mirage mediation, which is known as a solution for the little hierarchy problem in supersymmetry. Our previous study showed that 125 GeV Higgs boson is realized with O(10)% fine-tuning for 1.5 TeV gluino (1 TeV stop) mass. The μ term could be as large as 500 GeV without sacrificing the fine-tuning thanks to a cancellation mechanism. The singlet-doublet mixing is suppressed by tan β. In this paper, we further extend this analysis. We argue that approximate scale symmetries play a role behind the suppression of the singlet-doublet mixing. They reduce the mixing matrix to a simple form that is useful to understand the results of the numerical analysis. We perform a comprehensive analysis of the fine-tuning including the singlet sector by introducing a simple formula for the fine-tuning measure. This shows that the singlet mass of the least fine-tuning is favored by the LEP anomaly for moderate tan β. We also discuss prospects for the precision measurements of the Higgs couplings at LHC and ILC and direct/indirect dark matter searches in the model.

  4. Cosmological selection of multi-TeV supersymmetry

    Directory of Open Access Journals (Sweden)

    Keisuke Harigaya

    2015-10-01

    Full Text Available We discuss a possible answer to the fundamental question of why nature would actually prefer low-scale supersymmetry, but end up with a supersymmetry scale that is not completely natural. This question is inevitable if we postulate that low-energy supersymmetry is indeed realized in nature, despite the null observation of superparticles below a TeV at the Large Hadron Collider. As we argue in this paper, superparticles masses in the multi-TeV range can, in fact, be reconciled with the concept of naturalness by means of a cosmological selection effect—a selection effect based on the assumption of an exact discrete R-symmetry that is spontaneously broken by gaugino condensation in a pure supersymmetric Yang–Mills theory. In such theories, the dynamical scale of the Yang–Mills gauge interactions is required to be higher than the inflationary Hubble scale, in order to avoid the formation of domain walls. This results in a lower limit on the superparticle masses and leads us to conclude that, according to the idea of naturalness, the most probable range of superparticle masses is potentially located at the multi-TeV, if the inflationary Hubble rate is of O(1014 GeV. Our argument can be partially tested by future measurements of the tensor fraction in the Cosmic Microwave Background fluctuations.

  5. TeV Particle Astrophysics 2010, Booklet of abstracts

    International Nuclear Information System (INIS)

    None, C.; Davide Ferella, A.; Pato, M.; Catena, R.; Salucci, P.; Rielage, K.; Kobayashi, K.; Degunda, U.; Estrada, J.; Yue, Q.; Benbow, W.; Maestro, P.; Berghaus, P.; Benzvi, S.; Gallant, Y.; Coniglione, R.; Frey, R.; Besson, D.; Odrowski, S.; Ernenwein, J.P.; Dios Zornosa, J. de; Colnard, C.; Cavalcante de Souza, J.; Fraija, N.; Cerdeno, D.; Moroi, T.; Kumar, J.; Slatyer, T.; Yaguna, C.; Thomson, G.; Tameda, Y.; Taylor, A.; Giacinti, G.; Calvez, A.; Kotera, K.; Shinozaki, K.; Aharonian, F.; Essey, W.; Ahlers, M.; Fargion, D.; Canadas, B.; Boehm, C.; Palomares-Ruiz, S.; Panci, P.; Sanchez-Conde, M.A.; Hensley, B.; Vivier, M.; Hooper, D.; Finkbeiner, D.; Dobler, G.; Malyshev, D.; Mertsch, P.; Giannios, D.; Dalton, M.; Casandijan, J.M.; Mukherjee, R.; Morlino, G.; Ando, S.; Gilmore, R.; Medina, C.; Weitzel, Q.; Caprioli, D.; Vovk, I.; Vincent, S.; Delahaye, T.; Lavalle, J.; Galli, S.; Crocker, R.; Catena, R.; Cholis, I.; Sandick, P.; Rydberg, C.E.; Hulss, J.P.; Danninger, M.; Tran, D.; Spolyar, D.; Belanger, G.; Ronga, F.; Montanino, D.; Fornasa, M.; Regoes, E.; Caprioli, D.; Morlino, G.; Ostapchenko, S.; Kawanaka, N.; Kalli, S.; Whitehorn, N.; Boutayeb, B.; Casanellas, J.; Lopes, I.

    2012-01-01

    The aim of the conference is to bring together theorists and experimentalists working in the fields of Particle Physics, Astrophysics and Cosmology, with a shared interest in physical processes at the TeV energy scale. After decades of theoretical speculation, the exploration of the TeV energy frontier has now in fact begun, with the results provided by ground-based and space-born observatories of gamma-rays (Fermi, HESS, Magic, Veritas, Cangaroo, Milagro), anti-matter (PAMELA, ATIC, HESS and soon AMS-02) and neutrinos (IceCube, Antares), with a large number of ongoing direct Dark Matter search experiments exploiting different detection techniques, and with the TeV particle accelerators Tevatron and the Large Hadron Collider. The physics underlying these experiments involves many intertwined issues, such as the nature of Dark Matter, Physics beyond the Standard Model, the origin of Cosmic Rays and the distribution of Dark and visible matter in the Universe. This document gathers only the abstracts of the papers. (authors)

  6. Infrared Illuminated CdZnTe detectors with improved performance

    International Nuclear Information System (INIS)

    Ivanov, V.; Loutchanski, A.; Dorogov, P.; Khinoverov, S.

    2013-06-01

    It was found that IR illumination of a properly chosen wavelength and intensity can significantly improve spectrometric characteristics of CdZnTe quasi-hemispherical detectors [1]. Improving of the spectrometric characteristics is due to improvement of uniformity of charge collection by the detector volume. For operation at room temperature the optimal wavelength of IR illumination is about 940 nm, but for operation at lower temperature of -20 deg. C the optimal wavelengths of IR illumination is about 1050 nm. Infrared illumination can be performed using conventional low-power IR LEDs. Application of SMD LEDs allows produce miniature detection probes with IR illuminated CdZnTe detectors. We have fabricated and tested a variety of detection probes with CdZnTe quasi-hemispherical detectors from the smallest with volumes of 1-5 mm 3 to larger with volumes of 1.5 cm 3 and 4.0 cm 3 . The use of IR illumination significantly improves spectrometric characteristics of the probes operating at room temperature, especially probes with detectors of large volumes. The probe with the detector of 4 cm 3 without IR illumination had energy resolution of 24.2 keV at 662 keV and of 12.5 keV with IR illumination. (authors)

  7. Fast Neutron Detection Using Pixelated CdZnTe Spectrometers

    Science.gov (United States)

    Streicher, Michael; Goodman, David; Zhu, Yuefeng; Brown, Steven; Kiff, Scott; He, Zhong

    2017-07-01

    Fast neutrons are an important signature of special nuclear materials (SNMs). They have a low natural background rate and readily penetrate high atomic number materials that easily shield gamma-ray signatures. Therefore, they provide a complementary signal to gamma rays for detecting shielded SNM. Scattering kinematics dictate that a large nucleus (such as Cd or Te) will recoil with small kinetic energy after an elastic collision with a fast neutron. Charge carrier recombination and quenching further reduce the recorded energy deposited. Thus, the energy threshold of CdZnTe detectors must be very low in order to sense the small signals from these recoils. In this paper, the threshold was reduced to less than 5 keVee to demonstrate that the 5.9-keV X-ray line from 55Fe could be separated from electronic noise. Elastic scattering neutron interactions were observed as small energy depositions (less than 20 keVee) using digitally sampled pulse waveforms from pixelated CdZnTe detectors. Characteristic gamma-ray lines from inelastic neutron scattering were also observed.

  8. Interface formation of two- and three-dimensionally bonded materials in the case of GeTe-Sb2Te3 superlattices

    NARCIS (Netherlands)

    Momand, Jamo; Wang, Ruining; Boschker, Jos E.; Verheijen, Marcel A.; Calarco, Raffaella; Kooi, Bart J.

    2015-01-01

    GeTe-Sb2Te3 superlattices are nanostructured phase-change materials which are under intense investigation for non-volatile memory applications. They show superior properties compared to their bulk counterparts and significant efforts exist to explain the atomistic nature of their functionality. The

  9. Effect of magnetic field on the donor impurity in CdTe/Cd1-xMnxTe quantum well wire

    Science.gov (United States)

    Kalpana, P.; Reuben, A. Merwyn Jasper D.; Nithiananthi, P.; Jayakumar, K.

    2016-05-01

    The donor impurity binding energy in CdTe / Cd1-xMnxTe QWW with square well confinement along x - direction and parabolic confinement along y - direction under the influence of externally applied magnetic field has been computed using variational principle in the effective mass approximation. The spin polaronic shift has also been computed. The results are presented and discussed.

  10. Development of CdTe/Cd{sub 1-x}Mg{sub x}Te double barrier, single quantum well heterostructure for resonant tunneling

    Energy Technology Data Exchange (ETDEWEB)

    Reuscher, G.; Keim, M.; Fischer, F.; Waag, A.; Landwehr, G. [Physikalishes Institut der Universitaet Wuerzburg am Hubland, Wuerzburg (Germany)

    1995-12-31

    We report the first observation of resonant tunneling through a CdTe/Cd{sub 1-x}Mg{sub x}Te double barrier, single quantum well heterostructure. Negative differential resistance is observable at temperatures below 230 K, exhibiting a peak to valley ratio of 3:1 at 4.2 K. (author). 16 refs, 2 figs.

  11. Admittance of MIS-Structures Based on HgCdTe with a Double-Layer CdTe/Al2O3 Insulator

    Science.gov (United States)

    Dzyadukh, S. M.; Voitsekhovskii, A. V.; Nesmelov, S. N.; Sidorov, G. Yu.; Varavin, V. S.; Vasil'ev, V. V.; Dvoretsky, S. A.; Mikhailov, N. N.; Yakushev, M. V.

    2018-03-01

    Admittance of MIS structures based on n( p)- Hg1-xCdxTe (at x from 0.22 to 0.40) with SiO2/Si3N4, Al2O3, and CdTe/Al2O3 insulators is studied experimentally at 77 K. Growth of an intermediate CdTe layer during epitaxy results in the almost complete disappearance of the hysteresis of electrophysical characteristics of MIS structures based on graded-gap n-HgCdTe for a small range of the voltage variation. For a wide range of the voltage variation, the hysteresis of the capacitance-voltage characteristics appears for MIS structures based on n-HgCdTe with the CdTe/Al2O3 insulator. However, the hysteresis mechanism differs from that in case of a single-layer Al2O3 insulator. For MIS structures based on p-HgCdTe, introduction of an additional CdTe layer does not lead to a significant decrease of the hysteresis phenomena, which may be due to the degradation of the interface properties when mercury leaves the film as a result of low-temperature annealing changing the conductivity type of the semiconductor.

  12. The effect of dephasing on edge state transport through p-n junctions in HgTe/CdTe quantum wells.

    Science.gov (United States)

    Zhang, Ying-Tao; Song, Juntao; Sun, Qing-Feng

    2014-02-26

    Using the Landauer-Büttiker formula, we study the effect of dephasing on the transport properties of the HgTe/CdTe p-n junction. It is found that in the HgTe/CdTe p-n junction the topologically protected gapless helical edge states manifest a quantized 2e²/h plateau robust against dephasing, in sharp contrast to the case for the normal HgTe/CdTe quantum well. This robustness of the transport properties of the edge states against dephasing should be attributed to the special construction of the HgTe/CdTe p-n junction, which limits the gapless helical edge states to a very narrow region and thus weakens the influence of the dephasing on the gapless edge states to a large extent. Our results demonstrate that the p-n junction could be a substitute device for use in experimentally observing the robust edge states and quantized plateau. Finally, we present a feasible scheme based on current experimental methods.

  13. Radiative recombination of free and bound excitons in CdMnTe/CdMgTe quantum wells

    Energy Technology Data Exchange (ETDEWEB)

    Gubarev, S.I. [Rossijskaya Akademiya Nauk, Chernogolovka (Russian Federation). Inst. Fiziki Tverdogo Tela; Kulakovskii, V.D. [Rossijskaya Akademiya Nauk, Chernogolovka (Russian Federation). Inst. Fiziki Tverdogo Tela; Tyazhlov, M.G. [Rossijskaya Akademiya Nauk, Chernogolovka (Russian Federation). Inst. Fiziki Tverdogo Tela; Yakovlev, D.R. [Wuerzburg Univ. (Germany). Physikalisches Inst.; Waag, A. [Wuerzburg Univ. (Germany). Physikalisches Inst.; Landwehr, G. [Wuerzburg Univ. (Germany). Physikalisches Inst.

    1995-06-01

    The exchange induced dissociation of bound excitons (BE) has been studied in CdMnTe/CdMgTe quantum wells (QWs). It was found that value of the dissociation critical field does not depend on the field direction with respect to QW axis. This indicates that BE states in investigated structure are connected with excitons bound to neutral donors (D{sub 0}X states). The dependence of the critical field on the QW width has nonmonotonic character: the dissociation occurs at first in 60 A, then in 45 A, and at the end in 100 A QW. Such a behavior can be explained by transformation of bound exciton complex from quasi-3D to quasi-2D state with following increase of Coulomb correlations in confined exciton system. (orig.).

  14. Influence of Element Substitution on Corrosion Behavior of Bi2Te3-Based Compounds

    Science.gov (United States)

    Kohri, Hitoshi; Yagasaki, Takayoshi

    2018-02-01

    Atmospheric water may condense on the surface of Bi2Te3-based compounds constituting the Peltier module, depending on the operating environment used. In the stage of disposal, Bi2Te3-based compounds may come into contact with water in waste disposal sites. There are very few publications about the influence of condensed water on Peltier modules. Bi2Te3-Sb2Te3 or Bi2Te3-Bi2Se3 pseudo binary system compounds are used as p-type material or n-type material, respectively. The lattice distortion will be induced in the crystal of Bi2Te3-based compounds by element substitution due to the reduction in their thermal conductivity. However, the influence of element substitution on the corrosion behavior of Bi2Te3-based compounds remains unclear. In this study, the influence of element substitution on the corrosion behavior of Bi2Te3-based compounds with practical compositions has been investigated. Bi0.5Sb1.5Te3 or Bi2Te2.85Se0.15 was prepared by the vertical Bridgman method. The electrochemical properties at room temperature were evaluated by cyclic voltammetry in a standard three-electrode cell. The working electrolyte was a naturally aerated 0.6 or 3.0 mass% NaCl solution. From the tendency for corrosion potential for all the samples, the corrosion sensitivity of ternary compounds was slightly higher than that of binary compounds. From the trend of current density, it was found that Bi0.5Sb1.5Te3 had a corrosion resistance intermediate between Bi2Te3 and Sb2Te3. On the other hand, corrosion resistance was affected despite a small amount of Se substitution, and the corrosion resistance of Bi2Te2.85Se0.15 was close to or lower than that of Bi2Se3. From the observation results of the corrosion products, the trends of morphology and composition of corrosion products for Bi0.5Sb1.5Te3 or Bi2Te2.85Se0.15 were consistent with those of Sb2Te3 or Bi2Se3, respectively. From the results of x-ray photoelectron spectroscopy for the electrolyte after testing, the possibility that a

  15. Influence of Element Substitution on Corrosion Behavior of Bi2Te3-Based Compounds

    Science.gov (United States)

    Kohri, Hitoshi; Yagasaki, Takayoshi

    2018-06-01

    Atmospheric water may condense on the surface of Bi2Te3-based compounds constituting the Peltier module, depending on the operating environment used. In the stage of disposal, Bi2Te3-based compounds may come into contact with water in waste disposal sites. There are very few publications about the influence of condensed water on Peltier modules. Bi2Te3-Sb2Te3 or Bi2Te3-Bi2Se3 pseudo binary system compounds are used as p-type material or n-type material, respectively. The lattice distortion will be induced in the crystal of Bi2Te3-based compounds by element substitution due to the reduction in their thermal conductivity. However, the influence of element substitution on the corrosion behavior of Bi2Te3-based compounds remains unclear. In this study, the influence of element substitution on the corrosion behavior of Bi2Te3-based compounds with practical compositions has been investigated. Bi0.5Sb1.5Te3 or Bi2Te2.85Se0.15 was prepared by the vertical Bridgman method. The electrochemical properties at room temperature were evaluated by cyclic voltammetry in a standard three-electrode cell. The working electrolyte was a naturally aerated 0.6 or 3.0 mass% NaCl solution. From the tendency for corrosion potential for all the samples, the corrosion sensitivity of ternary compounds was slightly higher than that of binary compounds. From the trend of current density, it was found that Bi0.5Sb1.5Te3 had a corrosion resistance intermediate between Bi2Te3 and Sb2Te3. On the other hand, corrosion resistance was affected despite a small amount of Se substitution, and the corrosion resistance of Bi2Te2.85Se0.15 was close to or lower than that of Bi2Se3. From the observation results of the corrosion products, the trends of morphology and composition of corrosion products for Bi0.5Sb1.5Te3 or Bi2Te2.85Se0.15 were consistent with those of Sb2Te3 or Bi2Se3, respectively. From the results of x-ray photoelectron spectroscopy for the electrolyte after testing, the possibility that a

  16. Emitter/absorber interface of CdTe solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Song, Tao, E-mail: tsong241@gmail.com; Sites, James R. [Physics Department, Colorado State University, Fort Collins, Colorado 80523 (United States); Kanevce, Ana [National Renewable Energy Laboratory, Golden, Colorado 80401 (United States)

    2016-06-21

    The performance of CdTe solar cells can be very sensitive to the emitter/absorber interface, especially for high-efficiency cells with high bulk lifetime. Performance losses from acceptor-type interface defects can be significant when interface defect states are located near mid-gap energies. Numerical simulations show that the emitter/absorber band alignment, the emitter doping and thickness, and the defect properties of the interface (i.e., defect density, defect type, and defect energy) can all play significant roles in the interface recombination. In particular, a type I heterojunction with small conduction-band offset (0.1 eV ≤ ΔE{sub C} ≤ 0.3 eV) can help maintain good cell efficiency in spite of high interface defect density, much like with Cu(In,Ga)Se{sub 2} (CIGS) cells. The basic principle is that positive ΔE{sub C}, often referred to as a “spike,” creates an absorber inversion and hence a large hole barrier adjacent to the interface. As a result, the electron-hole recombination is suppressed due to an insufficient hole supply at the interface. A large spike (ΔE{sub C} ≥ 0.4 eV), however, can impede electron transport and lead to a reduction of photocurrent and fill-factor. In contrast to the spike, a “cliff” (ΔE{sub C} < 0 eV) allows high hole concentration in the vicinity of the interface, which will assist interface recombination and result in a reduced open-circuit voltage. Another way to mitigate performance losses due to interface defects is to use a thin and highly doped emitter, which can invert the absorber and form a large hole barrier at the interface. CdS is the most common emitter material used in CdTe solar cells, but the CdS/CdTe interface is in the cliff category and is not favorable from the band-offset perspective. The ΔE{sub C} of other n-type emitter choices, such as (Mg,Zn)O, Cd(S,O), or (Cd,Mg)Te, can be tuned by varying the elemental ratio for an optimal positive value of ΔE{sub C}. These

  17. Development of Low Surge Vacuum Contact with Te

    Energy Technology Data Exchange (ETDEWEB)

    Kim, B. S.; Lee, H. W.; Woo, B. C.; Kim, B. G. [Korea Electrotechnology Research Institute, Changwon (Korea, Republic of)

    1996-12-01

    The purpose of this study is to develop of low surge Te contact for vacuum circuit breaker. The vacuum circuit breaker have various advantages such that it is free from maintenance, does not bring about public pollution, is excellent in its current breaking property, and so forth, on account of which the extent of its application has become broadened rapidly. For the characteristics of the contact material for the vacuum circuit breaker to satisfy, there may be enumerated: (1)large current breaking capacity; (2)high voltage withstand; (3)small contact resistance; (4)small melt-adhesive force; (5)low chopping current value; (6)good workability; (7)sufficient mechanical strength; and so forth. In this study we used cobalt for based refractory material having high melting temperature and intermetallic material between tellurium and silver to reduce chopping current. The contact materials were produced in accordance with the powder metallurgy using the method of infiltration. Production of the contact material was carried out in such a method that cobalt powder having average particle size of 50{mu}m, pre sintered in H{sub 2} atmosphere, 900 degree C , 2 hour. Ag ingot and Te(Se) were alloyed using high frequency furnaced in vacuum. And then Ag-Te(Se) alloy was infiltrated to Co skeleton in H{sub 2} atmosphere, 1000 degree C , 1 hour. The melting of the alloy to be infiltrated was carried out in a vacuum sealed quartz tube and be analysed by X-ray diffraction, scanning electron microscope, optical microscope and energy dispersive energy spectrometer. In the alloying of silver and tellurium, tellurium does not exist in single element but Ag{sub 2}Te intermetallic compound. And In Ag and Se, Se does not exist in single element but Ag{sub 2}Se intermetallic compound. We also produced the test vacuum interruptor to evaluate the electrode properties in vacuum atmosphere. The electrical properties of Co-(Ag-Se) electrode have better value than that of Co-(Ag-Te) electrode

  18. Recent advances in Tl Br, Cd Te and CdZnTe semiconductor radiation detectors: a review

    International Nuclear Information System (INIS)

    Oliveira, Icimone B.

    2011-01-01

    The success in the development of radiation spectrometers operating at room temperature is based on many years of effort on the part of large numbers of workers around the world. These individuals have contributed to the understanding of the fundamental materials issues associated with the growth of semiconductors for this application, the development of device fabrication and processing technology, and advances in low noise electronics and pulse processing. Progress in this field continues at an accelerated pace, as in evidenced by the improvements in detector performance and by the growing number of commercial products. Thus, the last years have been seen continued effort in the development of room temperature compound semiconductors devices. High-Z compound semiconductor detectors has been explored for high energy resolution, high detection efficiency and are of low cost. Compound semiconductors detectors are well suited for addressing needs of demanding applications such as bore hole logging where high operating temperature are encountered. In this work recent developments in semiconductors detectors were reviewed. This review concentrated on thallium bromide (TlBr), cadmium zinc telluride (CdZnTe) and cadmium telluride (CdTe) crystals detectors. TlBr has higher stopping power compared to common semiconductor materials because it has the higher photoelectric and total attenuation coefficients over wide energy range from 100 keV to 1 MeV. CdTe and CdZnTe detectors have several attractive features for detecting X-ray and low energy gamma ray. Their relatively large band gaps lead to a relatively low leakage current and offer an excellent energy resolution at room temperature. A literature survey and bibliography was also included. (author)

  19. Recent advances in Tl Br, Cd Te and CdZnTe semiconductor radiation detectors: a review

    Energy Technology Data Exchange (ETDEWEB)

    Oliveira, Icimone B. [Universidade Bandeirante (UNIBAN), Sao Paulo, SP (Brazil)

    2011-07-01

    The success in the development of radiation spectrometers operating at room temperature is based on many years of effort on the part of large numbers of workers around the world. These individuals have contributed to the understanding of the fundamental materials issues associated with the growth of semiconductors for this application, the development of device fabrication and processing technology, and advances in low noise electronics and pulse processing. Progress in this field continues at an accelerated pace, as in evidenced by the improvements in detector performance and by the growing number of commercial products. Thus, the last years have been seen continued effort in the development of room temperature compound semiconductors devices. High-Z compound semiconductor detectors has been explored for high energy resolution, high detection efficiency and are of low cost. Compound semiconductors detectors are well suited for addressing needs of demanding applications such as bore hole logging where high operating temperature are encountered. In this work recent developments in semiconductors detectors were reviewed. This review concentrated on thallium bromide (TlBr), cadmium zinc telluride (CdZnTe) and cadmium telluride (CdTe) crystals detectors. TlBr has higher stopping power compared to common semiconductor materials because it has the higher photoelectric and total attenuation coefficients over wide energy range from 100 keV to 1 MeV. CdTe and CdZnTe detectors have several attractive features for detecting X-ray and low energy gamma ray. Their relatively large band gaps lead to a relatively low leakage current and offer an excellent energy resolution at room temperature. A literature survey and bibliography was also included. (author)

  20. B-factory via conversion of 1-TeV electron beams into 1-TeV photon beams

    International Nuclear Information System (INIS)

    Mtingwa, S.K.

    1991-01-01

    This paper reports on the study of CP violation and rare decays of beauty particles which are pressing problems in high-energy physics. It is known that one should analyze beauty decays of at least the order of 10 8 or 19 9 . Thus, numerous proposals for beauty factories are being discussed now, although some of these projects are likely to supply much smaller numbers of beauty events. At the same time, at present several projects, such as CLIC (Cern Linear Collider), expect to build linear e + e - colliders with beam energies up to 1 TeV. The aim of this work is to show that the possibility exists of using the unique features of the discussed teraelectron volt electron linacs to obtain a facility for the production of beauty via photoproduction of nuclei. Unique features of high-energy photoproduction are as follows. The rather large fraction (∼2 x 10 -4 ) of events with beauty at E γ ∼ 1 TeV. Beauty particles are produced with about equally large momenta ∼0.05 E γ and at rather large transverse momenta p t ∼ m b . The following scheme can be envisioned. The 1-TeV electron beam is Compton scattered off a low-energy (∼ 1-eV) laser pulse. The laser photons are thus converted into a highly collimated beam of energy E γ ∼ E e , directed along the electron's original line of motion. Such schemes to produce high-energy photon beams have been discussed. These 1-TeV photons are subsequently scattered onto a nuclear target to produce b bar b pairs

  1. The large-area CdTe thin film for CdS/CdTe solar cell prepared by physical vapor deposition in medium pressure

    Energy Technology Data Exchange (ETDEWEB)

    Luo, Run; Liu, Bo; Yang, Xiaoyan; Bao, Zheng; Li, Bing, E-mail: libing70@126.com; Zhang, Jingquan; Li, Wei; Wu, Lili; Feng, Lianghuan

    2016-01-01

    Graphical abstract: - Highlights: • The large-area CdTe film has been prepared by PVD under the pressure of 0.9 kPa. • The as-prepared CdTe thin film processes excellent photovoltaic properties. • This technique is suitable for depositing large-area CdTe thin film. • The 14.6% champion efficiency CdS/CdTe cell has been achieved. - Abstract: The Cadmium telluride (CdTe) thin film has been prepared by physical vapor deposition (PVD), the Ar + O{sub 2} pressure is about 0.9 kPa. This method is a newer technique to deposit CdTe thin film in large area, and the size of the film is 30 × 40 cm{sup 2}. This method is much different from the close-spaced sublimation (CSS), as the relevance between the source temperature and the substrate temperature is weak, and the gas phase of CdTe is transferred to the substrate by Ar + O{sub 2} flow. Through this method, the compact and uniform CdTe film (30 × 40 cm{sup 2}) has been achieved, and the performances of the CdTe thin film have been determined by transmission spectrum, SEM and XRD. The film is observed to be compact with a good crystallinity, the CdTe is polycrystalline with a cubic structure and a strongly preferred (1 1 1) orientation. Using the CdTe thin film (3 × 5 cm{sup 2}) which is taken from the deposited large-area film, the 14.6% efficiency CdS/CdTe thin film solar cell has been prepared successfully. The structure of the cell is glass/FTO/CdS/CdTe/graphite slurry/Au, short circuit current density (J{sub sc}) of the cell is 26.9 mA/cm{sup 2}, open circuit voltage (V{sub oc}) is 823 mV, and filling factor (FF) is 66.05%. This technique can be a quite promising method to apply in the industrial production, as it has great prospects in the fabricating of large-area CdTe film.

  2. A novel intermediate layer for Au/CdZnTe/FTO photoconductive structure

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Yuelu; Wang, Linjun, E-mail: ljwang@shu.edu.cn; Xu, Run; Huang, Jian; Tao, Jun; Meng, Hua; Zhang, Jijun; Min, Jiahua

    2016-12-01

    Highlights: • Graphene layer was spin-coated on CdZnTe to form Au/graphene/CdZnTe/FTO structure. • Graphene layer can significantly improve the contact property of Au/CdZnTe. • Graphene layer can obviously enhance UV photo-response of CdZnTe. • Graphene is a potential buffer material for CdZnTe based high-energy detectors. - Abstract: In this work, graphene is tried to use to improve the performance of polycrystalline CdZnTe high-energy radiation and photon detectors. A graphene intermediate layer is prepared by spin-coating process on the surface of polycrystalline CdZnTe film, which forms a photoconductive Au/graphene/CdZnTe/FTO structure. XRD, Raman, photoelectric response and other characterisation methods are adopted to investigate the effect of graphene layer on the electrical characteristics and UV photo-response performance of CdZnTe photoconductive structure. It is demonstrated that graphene layer can significantly improve the contact property of Au/CdZnTe structure, and obviously enhance its UV photo-response and the UV sensitivity increased with one order of magnitude.

  3. Cubic Crystal-Structured SnTe for Superior Li- and Na-Ion Battery Anodes.

    Science.gov (United States)

    Park, Ah-Ram; Park, Cheol-Min

    2017-06-27

    A cubic crystal-structured Sn-based compound, SnTe, was easily synthesized using a solid-state synthetic process to produce a better rechargeable battery, and its possible application as a Sn-based high-capacity anode material for Li-ion batteries (LIBs) and Na-ion batteries (NIBs) was investigated. The electrochemically driven phase change mechanisms of the SnTe electrodes during Li and Na insertion/extraction were thoroughly examined utilizing various ex situ analytical techniques. During Li insertion, SnTe was converted to Li 4.25 Sn and Li 2 Te; meanwhile, during Na insertion, SnTe experienced a sequential topotactic transition to Na x SnTe (x ≤ 1.5) and conversion to Na 3.75 Sn and Na 2 Te, which recombined into the original SnTe phase after full Li and Na extraction. The distinctive phase change mechanisms provided remarkable electrochemical Li- and Na-ion storage performances, such as large reversible capacities with high Coulombic efficiencies and stable cyclabilities with fast C-rate characteristics, by preparing amorphous-C-decorated nanostructured SnTe-based composites. Therefore, SnTe, with its interesting phase change mechanisms, will be a promising alternative for the oncoming generation of anode materials for LIBs and NIBs.

  4. Study of Cd Te recrystallization by hydrated-CdCl{sub 2} thermal treatment

    Energy Technology Data Exchange (ETDEWEB)

    Hernandez V, C.; Albor A, M. L.; Galarza G, U.; Aguilar H, J. R. [IPN, Escuela Superior de Fisica y Matematicas, Departamento de Fisica, San Pedro Zacatenco, 07738 Ciudad de Mexico (Mexico); Gonzalez T, M. A. [IPN, Escuela Superior de Computo, Nueva Industrial Vallejo, 07738 Ciudad de Mexico (Mexico); Flores M, J. M. [IPN, Escuela Superior de Ingenieria Quimica e Industrias Extractivas, Departamento de Ingenieria en Metalurgia y Materiales, Nueva Industrial Vallejo, 07738 Ciudad de Mexico (Mexico); Jimenez O, D. [IPN, Escuela Superior de Ingenieria Mecanica y Electrica, SEPI, Nueva Industrial Vallejo, 07738 Ciudad de Mexico (Mexico)

    2017-11-01

    Cd Te thin films solar cells are currently produced using a layer sequence of glass/FTO/CdS/Cd Te/metal contact (Cu/Ag), these films are deposited by two different techniques, chemical bath deposition (CBD) and close space vapour transport (CSVT). In order to reach reasonable conversion efficiencies, the device has to be thermally treated in a hydrated-CdCl{sub 2} atmosphere. This study was carried out using X-ray diffraction (XRD), photoluminescence, Sem-EDS, four probe method and Sims profiling of Cd Te. These analyses confirm the presence of hydrated CdCl{sub 2} and Cd Te phases on Cd Te surface and shown a good recrystallization morphology helping to the carriers mobility along the structure. Using the thermal treatment was possible to reduce the resistivity of Cd Te thin film; it is a result to the Cl migration along the Cd Te solar cell structure, reducing the defects between CdS and Cd Te thin films. A strong Cd Te thin film recrystallization was observed by the implementation of a hydrated-CdCl{sub 2} treatment doing to this a good candidate to Cd Te solar cells process. (Author)

  5. N-doped Sb2Te phase change materials for higher data retention

    International Nuclear Information System (INIS)

    Zhu Min; Wu Liangcai; Rao Feng; Song Zhitang; Li Xuelai; Peng Cheng; Zhou Xilin; Ren Kun; Yao Dongning; Feng Songlin

    2011-01-01

    Highlights: → Crystallization temperatures of the N-doped Sb 2 Te films increase remarkably. → The E a of N-doped Sb 2 Te films increase first, and then decrease. → The best 10-years lifetime at temperature up to 141 deg. C is found in Sb 2 TeN1 films. → The power consumption of PCRAM test cell based on Sb 2 TeN1 film is low. - Abstract: Crystallization temperatures of the Sb 2 Te films increase remarkably from 139.4 deg. C to 223.0 deg. C as the N 2 flow rates increasing from 0 sccm to 1.5 sccm. Electrical conduction activation energies for amorphous and crystalline states increase by doping nitrogen. A small amount of nitrogen atoms can locate at interstitial sites in the hexagonal structure, generating a strain field, and improving the thermal stability of amorphous state. The best 10-years lifetime at temperature up to 141 deg. C is found in Sb 2 TeN 1 films. Doping excessively high nitrogen in Sb 2 Te film will form nitride and make Te separate out. As a result, the activation energy for crystallization decreases instead, accompanying with the deterioration of thermal stability. The power consumption of PCRAM test cell based on Sb 2 TeN 1 film is ten times lower than that of PCRAM device using Ge 2 Sb 2 Te 5 films.

  6. Study of Cd Te recrystallization by hydrated-CdCl_2 thermal treatment

    International Nuclear Information System (INIS)

    Hernandez V, C.; Albor A, M. L.; Galarza G, U.; Aguilar H, J. R.; Gonzalez T, M. A.; Flores M, J. M.; Jimenez O, D.

    2017-01-01

    Cd Te thin films solar cells are currently produced using a layer sequence of glass/FTO/CdS/Cd Te/metal contact (Cu/Ag), these films are deposited by two different techniques, chemical bath deposition (CBD) and close space vapour transport (CSVT). In order to reach reasonable conversion efficiencies, the device has to be thermally treated in a hydrated-CdCl_2 atmosphere. This study was carried out using X-ray diffraction (XRD), photoluminescence, Sem-EDS, four probe method and Sims profiling of Cd Te. These analyses confirm the presence of hydrated CdCl_2 and Cd Te phases on Cd Te surface and shown a good recrystallization morphology helping to the carriers mobility along the structure. Using the thermal treatment was possible to reduce the resistivity of Cd Te thin film; it is a result to the Cl migration along the Cd Te solar cell structure, reducing the defects between CdS and Cd Te thin films. A strong Cd Te thin film recrystallization was observed by the implementation of a hydrated-CdCl_2 treatment doing to this a good candidate to Cd Te solar cells process. (Author)

  7. C-V Calculations in CdS/CdTe Thin Films Solar Cells with a CdSxTe1-x Interlayer

    Directory of Open Access Journals (Sweden)

    A. Gonzalez-Cisneros

    2013-01-01

    Full Text Available In CdS/CdTe solar cells, chemical interdiffusion at the interface gives rise to the formation of an interlayer of the ternary compound CdSxCdTe1-x. In this work, we evaluate the effects of this interlayer in CdS/CdTe photovoltaic cells in order to improve theoretical results describing experimental C-V (capacitance versus voltage characteristics. We extended our previous theoretical methodology developed on the basis of three cardinal equations (Castillo-Alvarado et al., 2010. The present results provide a better fit to experimental data obtained from CdS/CdTe solar cells grown in our laboratory by the chemical bath deposition (for CdS film and the close-spaced vapor transport (for CdTe film techniques.

  8. Fractal features of CdTe thin films grown by RF magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Hosseinpanahi, Fayegh, E-mail: f.hosseinpanahi@yahoo.com [Department of Physics, Payame Noor University, P.O. Box 19395-4697, Tehran (Iran, Islamic Republic of); Raoufi, Davood [Department of Physics, University of Bu Ali Sina, P.O. Box 65174, Hamedan (Iran, Islamic Republic of); Ranjbarghanei, Khadijeh [Department of Physics, Plasma Physics Research Center, Science & Research Branch Islamic Azad University, Tehran (Iran, Islamic Republic of); Karimi, Bayan [Department of Physics, Payame Noor University, P.O. Box 19395-4697, Tehran (Iran, Islamic Republic of); Babaei, Reza [Department of Physics, Plasma Physics Research Center, Science & Research Branch Islamic Azad University, Tehran (Iran, Islamic Republic of); Hasani, Ebrahim [Department of Physics, University of Bu Ali Sina, P.O. Box 65174, Hamedan (Iran, Islamic Republic of)

    2015-12-01

    Graphical abstract: - Highlights: • CdTe thin films were deposited on glass substrates by RF magnetron sputtering at room temperature with different deposition time 5, 10 and 15 min. • Nanostructure of CdTe layer indicates that CdTe films are polycrystalline and have zinc blende structure, irrespective of their deposition time. • Complexity and roughness of the CdTe films and strength of multifractality increase with increasing deposition time. • Detrended fluctuation analysis (DFA) and also multifractal detrended fluctuation analysis (MFDFA) methods showed that prepared CdTe films have multifractal nature. - Abstract: Cadmium telluride (CdTe) thin films were prepared by RF magnetron sputtering on glass substrates at room temperature (RT). The film deposition was performed for 5, 10, and 15 min at power of 30 W with a frequency of 13.56 MHz. The crystal structure of the prepared CdTe thin films was studied by X-ray diffraction (XRD) technique. XRD analyses indicate that the CdTe films are polycrystalline, having zinc blende structure of CdTe irrespective of their deposition time. All CdTe films showed a preferred orientation along (1 1 1) crystalline plane. The surface morphology characterization of the films was studied using atomic force microscopy (AFM). The quantitative AFM characterization shows that the RMS surface roughness of the prepared CdTe thin films increases with increasing the deposition time. The detrended fluctuation analysis (DFA) and also multifractal detrended fluctuation analysis (MFDFA) methods showed that prepared CdTe thin films have multifractal nature. The complexity, roughness of the CdTe thin films and strength of the multifractality increase as deposition time increases.

  9. X-ray diffraction study of epitaxial heterostructures of II-VI CdTe and ZnTe semiconductors; Etude par diffraction de rayons X d`heterostructures epitaxiees a base des semi-conducteurs II-VI CdTe et ZnTe

    Energy Technology Data Exchange (ETDEWEB)

    Bouchet-Boudet, N.

    1996-10-07

    This work deals with the structural study of II-VI semiconductor (CdTe and ZnTe) heterostructures by X-ray diffraction and reflectivity. These heterostructures have a high lattice parameter misfit and are grown by Molecular Beam Epitaxy. Two main subjects are developed: the characterization of ZnTe wires, grown by step propagation on a CdTe (001) vicinal surface, and the study of the vertical correlations in Cd{sub 0.8}Zn{sub 0.2}Te / CdTe superlattices and superlattices made of ZnTe fractional layers spaced by CdTe. The growth of organised system is up to date; its aim is to realize quantum boxes (or wires) superlattices which are laterally and vertically ordered. The deformation along the growth axis induced by a ZnTe fractional layer inserted in a CdTe matrix is modelled, in the kinematical approximation, to reproduce the reflectivity measured around the substrate (004) Bragg peak. The lateral periodicity of the wires, deposited on a vicinal surface is a new and difficult subject. Some results are obtained on a vertical superlattice grown on a 1 deg. mis-cut surface. The in-plane and out-of-plane correlation lengths of a Cd{sub 0.8}Zn{sub 0.2}Te / CdTe superlattice are deduced from the diffused scattered intensity measured at grazing incidence. The calculations are made within the `distorted Wave Born Approximation`. The vertical correlation in ZnTe boxes (or wines) superlattices can be measured around Bragg peaks. It is twice bigger in a superlattice grown on a 2 deg. mis-cut substrate than a nominal one. (author). 74 refs.

  10. Fractal features of CdTe thin films grown by RF magnetron sputtering

    International Nuclear Information System (INIS)

    Hosseinpanahi, Fayegh; Raoufi, Davood; Ranjbarghanei, Khadijeh; Karimi, Bayan; Babaei, Reza; Hasani, Ebrahim

    2015-01-01

    Graphical abstract: - Highlights: • CdTe thin films were deposited on glass substrates by RF magnetron sputtering at room temperature with different deposition time 5, 10 and 15 min. • Nanostructure of CdTe layer indicates that CdTe films are polycrystalline and have zinc blende structure, irrespective of their deposition time. • Complexity and roughness of the CdTe films and strength of multifractality increase with increasing deposition time. • Detrended fluctuation analysis (DFA) and also multifractal detrended fluctuation analysis (MFDFA) methods showed that prepared CdTe films have multifractal nature. - Abstract: Cadmium telluride (CdTe) thin films were prepared by RF magnetron sputtering on glass substrates at room temperature (RT). The film deposition was performed for 5, 10, and 15 min at power of 30 W with a frequency of 13.56 MHz. The crystal structure of the prepared CdTe thin films was studied by X-ray diffraction (XRD) technique. XRD analyses indicate that the CdTe films are polycrystalline, having zinc blende structure of CdTe irrespective of their deposition time. All CdTe films showed a preferred orientation along (1 1 1) crystalline plane. The surface morphology characterization of the films was studied using atomic force microscopy (AFM). The quantitative AFM characterization shows that the RMS surface roughness of the prepared CdTe thin films increases with increasing the deposition time. The detrended fluctuation analysis (DFA) and also multifractal detrended fluctuation analysis (MFDFA) methods showed that prepared CdTe thin films have multifractal nature. The complexity, roughness of the CdTe thin films and strength of the multifractality increase as deposition time increases.

  11. Crystal structure and magnetic properties of the Ba3TeCo3P2O14, Pb3TeCo3P2O14, and Pb3TeCo3V2O14 langasites

    DEFF Research Database (Denmark)

    Krizan, J.W.; de la Cruz, C.; Andersen, Niels Hessel

    2013-01-01

    We report the structural and magnetic characterizations of Ba3TeCo3P2O14, Pb3TeCo3P2O14, and Pb3TeCo3V2O14, compounds that are based on the mineral dugganite, which is isostructural to langasites. The magnetic part of the structure consists of layers of Co2+ triangles. Nuclear and magnetic...... structures were determined through a co-refinement of synchrotron and neutron powder diffraction data. In contrast to the undistorted P321 langasite structure of Ba3TeCo3P2O14, a complex structural distortion yielding a large supercell is found for both Pb3TeCo3P2O14 and Pb3TeCo3V2O14. Comparison...... of the three compounds studied along with the zinc analog Pb3TeZn3P2O14, also characterized here, suggests that the distortion is driven by Pb2+ lone pairs; as such, the Pb compounds crystallize in a pyroelectric space group, P2. Magnetic susceptibility, magnetization, and heat capacity measurements were...

  12. Photo- and Thermo-Induced Changes in Optical Constants and Structure of Thin Films from GeSe2-GeTe-ZnTe System

    Science.gov (United States)

    Petkov, Kiril; Todorov, Rossen; Vassilev, Venceslav; Aljihmani, Lilia

    We examined the condition of preparation of thin films from GeSe2-GeTe-ZnTe system by thermal evaporation and changes in their optical properties after exposure to light and thermal annealing. The results for composition analysis of thin films showed absence of Zn independently of the composition of the bulk glass. By X-ray diffraction (XRD) analysis it was found that a reduction of ZnTe in ZnSe in bulk materials takes of place during the film deposition. A residual from ZnSe was observed in the boat after thin film deposition. Optical constants (refractive index, n and absorption coefficient, α) and thickness, d as well as the optical band gap, Eg, depending of the content of Te in ternary Ge-Se-Te system are determined from specrophotometric measurements in the spectral range 400-2500 nm applying the Swanepoel's envelope method and Tauc's procedure. With the increase of Te content in the layers the absorption edge is shifted to the longer wavelengths, refractive index increases while the optical band gap decreases from 2.02 eV for GeSe2 to 1.26 eV for Ge34Se42Te24. The values of the refractive index decrease after annealing of all composition and Eg increase, respectively. Thin films with composition of Ge27Se47Te9Zn17 and Ge28Se49Te10Zn13 were prepared by co-evaporation of (GeSe2)78(GeTe)22 and Zn from a boat and a crucible and their optical properties, surface morphology and structure were investigated. The existence of a correlation between the optical band gap and the copostion of thin films from the system studied was demonstrated.

  13. Post-growth annealing of Bridgman-grown CdZnTe and CdMnTe crystals for room-temperature nuclear radiation detectors

    International Nuclear Information System (INIS)

    Egarievwe, Stephen U.; Yang, Ge; Egarievwe, Alexander A.; Okwechime, Ifechukwude O.; Gray, Justin; Hales, Zaveon M.; Hossain, Anwar; Camarda, Giuseppe S.; Bolotnikov, Aleksey E.; James, Ralph B.

    2015-01-01

    Bridgman-grown cadmium zinc telluride (CdZnTe or CZT) and cadmium manganese telluride (CdMnTe or CMT) crystals often have Te inclusions that limit their performances as X-ray- and gamma-ray-detectors. We present here the results of post-growth thermal annealing aimed at reducing and eliminating Te inclusions in them. In a 2D analysis, we observed that the sizes of the Te inclusions declined to 92% during a 60-h annealing of CZT at 510 °C under Cd vapor. Further, tellurium inclusions were eliminated completely in CMT samples annealed at 570 °C in Cd vapor for 26 h, whilst their electrical resistivity fell by an order of 10 2 . During the temperature-gradient annealing of CMT at 730 °C and an 18 °C/cm temperature gradient for 18 h in a vacuum of 10 −5 mbar, we observed the diffusion of Te from the sample, so causing a reduction in size of the Te inclusions. For CZT samples annealed at 700 °C in a 10 °C/cm temperature gradient, we observed the migration of Te inclusions from a low-temperature region to a high one at 0.022 μm/s. During the temperature-gradient annealing of CZT in a vacuum of 10 −5 mbar at 570 °C and 30 °C/cm for 18 h, some Te inclusions moved toward the high-temperature side of the wafer, while other inclusions of the same size, i.e., 10 µm in diameter, remained in the same position. These results show that the migration, diffusion, and reaction of Te with Cd in the matrix of CZT- and CMT-wafers are complex phenomena that depend on the conditions in local regions, such as composition and structure, as well as on the annealing conditions

  14. A vaporization study of the Ru–Te binary system by Knudsen effusion mass spectrometry

    Energy Technology Data Exchange (ETDEWEB)

    Lakshmi Narasimhan, T.S., E-mail: tslak@igcar.gov.in; Balasubramanian, R., E-mail: rbs@igcar.gov.in; Manikandan, P., E-mail: manikandan@igcar.gov.in; Viswanathan, R., E-mail: rvis@igcar.gov.in

    2013-12-25

    Highlights: •Knudsen effusion mass spectrometric study of the Ru–Te binary system conducted for the first time. •Direct confirmation of incongruent vaporization of RuTe{sub 2} – primarily to Te{sub 2}(g) and to a very small extent to Te(g). •p–T relations for Te{sub 2} and Te (860–1030 K), the relative compositions consistent with those on other M–Te systems. •Thermodynamic data for the reaction: RuTe{sub 2}(s) = Ru(s) + 2/i Te{sub i}(g) (i = 2 and 1) and for the formation of RuTe{sub 2}(s). •The Ru-rich phase boundary of RuTe{sub 2}(s) close to the stoichiometric value and the Te-rich phase boundary uncertain. -- Abstract: Vaporization studies on some Ru–Te samples with initial compositions 40.0 and 50.5 at.% Te, corresponding to the two-phase field (Ru + RuTe{sub 2}) and of initial compositions 69.5 and 71.5 at.% Te, corresponding to the two-phase field (RuTe{sub 2} + Te) were conducted by Knudsen effusion mass spectrometry. The vaporization was found to be one of incongruent in nature with the vapor phase consisting only of the component tellurium. The partial pressures of Te{sub 2}(g) and Te(g) were measured over (Ru + RuTe{sub 2}) in the temperature range of (860–1030) K and the p–T relations were deduced as: Log [p(Te{sub 2})/Pa] = [−(14,335 ± 148)/(T/K)] + (14.416 ± 0.154) and Log [p(Te)/Pa] = [−(13,838 ± 218)/(T/K)] + (12.480 ± 0.226). The relative mole fraction of Te(g) was < 0.05. From the partial pressures, the thermodynamic data for the vaporization reactions RuTe{sub 2}(s) = Ru(s) + 2/i Te{sub i}(g) where i = 2 and 1 were deduced and so also were for the formation of RuTe{sub 2}(s): Δ{sub r}H{sub m}{sup o}(298.15K)/(kJmol{sup -1})=284.3±16.4(i=2)and537.7±24.7(i=1); Δ{sub r}S{sub m}{sup o}(298.15K)/(Jmol{sup -1}K{sup -1})=200.2±10.4(i=2)and155.0±4.3(i=1); Δ{sub f}H{sub m}{sup o}(RuTe{sub 2},s,298.15K)/(kJmol{sup -1})=-(121.1±16.4); Δ{sub f}S{sub m}{sup o}(RuTe{sub 2},s,298.15K)/(Jmol{sup -1}K{sup -1})=-(39.8

  15. Molecular beam epitaxy of GeTe-Sb2Te3 phase change materials studied by X-ray diffraction

    International Nuclear Information System (INIS)

    Shayduk, Roman

    2010-01-01

    The integration of phase change materials into semiconductor heterostructures may lead to the development of a new generation of high density non-volatile phase change memories. Epitaxial phase change materials allow to study the detailed structural changes during the phase transition and to determine the scaling limits of the memory. This work is dedicated to the epitaxial growth of Ge-Sb-Te phase change alloys on GaSb(001). We deposit Ge-Sb-Te (GST) films on GaSb(001) substrates by means of molecular beam epitaxy (MBE). The film orientation and lattice constant evolution is determined in real time during growth using grazing incidence X-ray diffraction (GID). The nucleation stage of the growth is studied in situ using reflection high energy electron diffraction (RHEED). Four growth regimes of GST on GaSb(001) were observed: amorphous, polycrystalline, incubated epitaxial and direct epitaxial. Amorphous film grows for substrate temperatures below 100 C. For substrate temperatures in the range 100-160 C, the film grows in polycrystalline form. Incubated epitaxial growth is observed at temperatures from 180 to 210 C. This growth regime is characterized by an initial 0.6nm thick amorphous layer formation, which crystallizes epitaxially as the film thickness increases. The determined lattice constant of the films is 6.01 A, very close to that of the metastable GST phase. The films predominantly possess an epitaxial cube-on-cube relationship. At higher temperatures the films grow epitaxially, however the growth rate is rapidly decreasing with temperature. At temperatures above 270 C the growth rate is zero. The composition of the grown films is close to 2:2:5 for Ge, Sb and Te, respectively. The determined crystal structure of the films is face centered cubic (FCC) with a rhombohedral distortion. The analysis of X-ray peak widths gives a value for the rhombohedral angle of 89.56 . We observe two types of reflections in reciprocal space indicating two FCC sublattices in

  16. Energy dispersive CdTe and CdZnTe detectors for spectral clinical CT and NDT applications

    Energy Technology Data Exchange (ETDEWEB)

    Barber, W.C., E-mail: william.barber@dxray.com [DxRay, Inc., Northridge, CA (United States); Interon AS, Asker (Norway); Wessel, J.C. [DxRay, Inc., Northridge, CA (United States); Interon AS, Asker (Norway); Nygard, E. [Interon AS, Asker (Norway); Iwanczyk, J.S. [DxRay, Inc., Northridge, CA (United States)

    2015-06-01

    We are developing room temperature compound semiconductor detectors for applications in energy-resolved high-flux single x-ray photon-counting spectral computed tomography (CT), including functional imaging with nanoparticle contrast agents for medical applications and non-destructive testing (NDT) for security applications. Energy-resolved photon-counting can provide reduced patient dose through optimal energy weighting for a particular imaging task in CT, functional contrast enhancement through spectroscopic imaging of metal nanoparticles in CT, and compositional analysis through multiple basis function material decomposition in CT and NDT. These applications produce high input count rates from an x-ray generator delivered to the detector. Therefore, in order to achieve energy-resolved single photon counting in these applications, a high output count rate (OCR) for an energy-dispersive detector must be achieved at the required spatial resolution and across the required dynamic range for the application. The required performance in terms of the OCR, spatial resolution, and dynamic range must be obtained with sufficient field of view (FOV) for the application thus requiring the tiling of pixel arrays and scanning techniques. Room temperature cadmium telluride (CdTe) and cadmium zinc telluride (CdZnTe) compound semiconductors, operating as direct conversion x-ray sensors, can provide the required speed when connected to application specific integrated circuits (ASICs) operating at fast peaking times with multiple fixed thresholds per pixel provided the sensors are designed for rapid signal formation across the x-ray energy ranges of the application at the required energy and spatial resolutions, and at a sufficiently high detective quantum efficiency (DQE). We have developed high-flux energy-resolved photon-counting x-ray imaging array sensors using pixellated CdTe and CdZnTe semiconductors optimized for clinical CT and security NDT. We have also fabricated high

  17. The investigation of solid solutions thin interlayers in CdS/CdTe film heterosystems

    International Nuclear Information System (INIS)

    Khrypunov, G.; Boyko, B.; Chernykh, O.

    1999-01-01

    The photo-response spectral dependence of ITO/CdTe/Au/Cu and ITO/CdS/CdTe/Au/Cu film heterosystems were investigated. At illuminations ITO/CdS/CdTe/Au/Cu heterosystems on ITO side a photo-response maximum was observed for photon absorption with a wavelength of 0.87 μm that is stipulated by formation of CdS x Te 1-x solid solutions interlayer with band gap width less than in CdTe layer. By use optical measurement transmittance spectra was selected a spectral photosensitivity interval appropriate to the contribution of non-equilibrium charge carriers generated in solid solutions interlayer by photon absorption with energy less than CdTe film band gap

  18. Large-Area Synthesis of High-Quality Uniform Few-Layer MoTe2.

    Science.gov (United States)

    Zhou, Lin; Xu, Kai; Zubair, Ahmad; Liao, Albert D; Fang, Wenjing; Ouyang, Fangping; Lee, Yi-Hsien; Ueno, Keiji; Saito, Riichiro; Palacios, Tomás; Kong, Jing; Dresselhaus, Mildred S

    2015-09-23

    The controlled synthesis of large-area, atomically thin molybdenum ditelluride (MoTe2) crystals is crucial for its various applications based on the attractive properties of this emerging material. In this work, we developed a chemical vapor deposition synthesis to produce large-area, uniform, and highly crystalline few-layer 2H and 1T' MoTe2 films. It was found that these two different phases of MoTe2 can be grown depending on the choice of Mo precursor. Because of the highly crystalline structure, the as-grown few-layer 2H MoTe2 films display electronic properties that are comparable to those of mechanically exfoliated MoTe2 flakes. Our growth method paves the way for the large-scale application of MoTe2 in high-performance nanoelectronics and optoelectronics.

  19. Nuclear parameters determination of the 127Te β - decay: a proposal for teaching nuclear physics

    International Nuclear Information System (INIS)

    Batista, Wagner Fonseca

    2011-01-01

    A study of the 127 Te β - decay was carried out by means of gamma spectroscopy measurements using high resolution HPGe detector, in the region from 30 keV to 1.0 MeV, aiming to get a better understanding of the 127 Te nuclear structure. The radioactive sources of 12 7Te were obtained from the 126 Te(n,γ) 1 '2 7 Te nuclear reaction produced in the IEA- R1 nuclear reactor at IPEN/CNEN-SP. Five gamma t ransitions previously attributed to this decay were confirmed with a better precision than previously. The half-life of 127 Te was also studied resulting in data with lower uncertainty. Using a set of data selected from gamma spectroscopy measurements was developed and applied a didactic proposal for high school students using the Excel software. (author)

  20. Vapour growth of Cd(Zn)Te columnar nanopixels into porous alumina

    International Nuclear Information System (INIS)

    Sochinskii, N.V.; Abellan, M.; Martin Gonzalez, M.; Saucedo, E.; Dieguez, E.; Briones, F.

    2006-01-01

    The vapour phase growth (VPG) of CdTe and Cd 1- x Zn x Te was performed in order to investigate the formation of Cd(Zn)Te columnar nanostructures, which could serve as a basis for micropixels usable for further development of X- and gamma-ray high-resolution imaging devices. The possibility to form the 'Cd(Zn)Te-in-porous alumina' nanostructures by VPG has been demonstrated. The Cd(Zn)Te crystals integrated into nanoporous alumina have shown to have photoluminescence properties compatible with those of the bulk crystals and planar epitaxial layers. Further investigations are going on to improve the structural quality of Cd(Zn)Te nanocrystals