WorldWideScience

Sample records for earth doped semiconductors

  1. Laser action on rare earth doped nitride semiconductor thin layers

    International Nuclear Information System (INIS)

    Oussif, A.; Diaf, M.

    2010-01-01

    Complete text of publication follows. The structure, chemical composition, properties, and their relationships in solids lay the foundation of materials science. Recently, great interest in rare-earth (RE)-doped wide-bandgap semiconductors, which combine the electronic properties of semiconductors with the unique luminescence features of RE ions, is from the fundamental standpoint of structure-composition-properties of solids. At first, a significant amount of work has been reported on the study of infrared emissions from Er 3+- doped semiconductors because Er 3+ exhibits luminescence at 1.54 μm, a wavelength used in optical communications. Since Steckl and Birkhahn first reported visible emission associated with Er from GaN:Er films, the RE-doped semiconductors have received considerable interest for possible application in light emitting devices. Molecular-beam epitaxy (MBE) and metalorganic chemical vapour deposition (MOCVD) have been used mainly to grow GaN host films. The RE dopants were typically incorporated into the host films by in situ doping during the growth or by ion implantation after the growth. GaN doped with rare-earth elements (RE) hold significant potential for applications in optical devices, since they show sharp intense luminescence which is only minimally affected by temperature variations. Among the various RE dopants, Eu seems to be the most interesting, since it yields red luminescence 622 nm which has not been realized in commercially available light emitting devices (LEDs) that use InGaN active layers. We have earlier reported single crystalline growth of Eu-doped GaN and nearly temperature independent red luminescence at 622 nm originating from the intra-4f-4f transition of the Eu 3+ ion. The red luminescence was analyzed and determined to be generated through trap-level-mediated energy transfer from the semiconductor host.

  2. Crystal-field investigations of rare-earth-doped wide band gap semiconductors

    CERN Multimedia

    Muller, S; Wahl, U

    Crystal field investigations play a central role in the studies of rare earth doped semiconductors. Optical stark level spectroscopy and lattice location studies of radioactive rare earth isotopes implanted at ISOLDE have provided important insight into these systems during the last years. It has been shown that despite a major site preference of the probe atoms in the lattice, several defect configurations do exist. These sites are visible in the optical spectra but their origin and nature aren't deducible from these spectra alone. Hyperfine measurements on the other hand should reveal these defect configurations and yield the parameters necessary for a description of the optical properties at the atomic scale. In order to study the crystal field with this alternative approach, we propose a new concept for perturbed $\\gamma\\gamma$-angular correlation (PAC) experiments at ISOLDE based on digital signal processing in contrast to earlier analog setups. The general functionality of the spectrometer is explained ...

  3. Study of amorphous semiconductors doped with rare earths (Gd and Er) and conducting polymers by EPR techniques and magnetic susceptibility

    International Nuclear Information System (INIS)

    Sercheli, Mauricio da Silva

    1999-01-01

    This thesis involves the study of amorphous semiconductors and conducting polymers, which have been characterized by EPR and magnetic susceptibility measurements, and to a lesser extent by Raman spectroscopy and RBS. The semiconductors were studied using thin films of silicon doped with rare earth metals, e.g. erbium and gadolinium, which had their magnetic properties studied. Using these studies we could determine the state of valence of the rare earths as well as their concentrations in the silicon matrix. According to our results, the valence of the rare earth metal ions is 3+, and we were able to conclude that 4f electronic shells could not be used for the calculation of the conducting band in this system. Furthermore, the analysis of the data on the magnetic susceptibility of the Er 3+ ion with cubic crystalline acting field, gave us the opportunity to estimate the overall splitting of their electronic states for the first time. The conducting polymers were studied using samples of poly(3-methylthiophene) doped with ClO 4 - , which show a phase transition in the range of 230 K to 130 K. The electron paramagnetic resonance also gives important information on the crystallization, doping level and the presence of polarons or bipolarons in conducting polymers. (author)

  4. Doping of organic semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Luessem, B.; Riede, M.; Leo, K. [Institut fuer Angewandte Photophysik, TU Dresden (Germany)

    2013-01-15

    The understanding and applications of organic semiconductors have shown remarkable progress in recent years. This material class has been developed from being a lab curiosity to the basis of first successful products as small organic LED (OLED) displays; other areas of application such as OLED lighting and organic photovoltaics are on the verge of broad commercialization. Organic semiconductors are superior to inorganic ones for low-cost and large-area optoelectronics due to their flexibility, easy deposition, and broad variety, making tailor-made materials possible. However, electrical doping of organic semiconductors, i.e. the controlled adjustment of Fermi level that has been extremely important to the success of inorganic semiconductors, is still in its infancy. This review will discuss recent work on both fundamental principles and applications of doping, focused primarily to doping of evaporated organic layers with molecular dopants. Recently, both p- and n-type molecular dopants have been developed that lead to efficient and stable doping of organic thin films. Due to doping, the conductivity of the doped layers increases several orders of magnitude and allows for quasi-Ohmic contacts between organic layers and metal electrodes. Besides reducing voltage losses, doping thus also gives design freedom in terms of transport layer thickness and electrode choice. The use of doping in applications like OLEDs and organic solar cells is highlighted in this review. Overall, controlled molecular doping can be considered as key enabling technology for many different organic device types that can lead to significant improvements in efficiencies and lifetimes. (Copyright copyright 2013 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  5. Doping of organic semiconductors

    International Nuclear Information System (INIS)

    Luessem, B.; Riede, M.; Leo, K.

    2013-01-01

    The understanding and applications of organic semiconductors have shown remarkable progress in recent years. This material class has been developed from being a lab curiosity to the basis of first successful products as small organic LED (OLED) displays; other areas of application such as OLED lighting and organic photovoltaics are on the verge of broad commercialization. Organic semiconductors are superior to inorganic ones for low-cost and large-area optoelectronics due to their flexibility, easy deposition, and broad variety, making tailor-made materials possible. However, electrical doping of organic semiconductors, i.e. the controlled adjustment of Fermi level that has been extremely important to the success of inorganic semiconductors, is still in its infancy. This review will discuss recent work on both fundamental principles and applications of doping, focused primarily to doping of evaporated organic layers with molecular dopants. Recently, both p- and n-type molecular dopants have been developed that lead to efficient and stable doping of organic thin films. Due to doping, the conductivity of the doped layers increases several orders of magnitude and allows for quasi-Ohmic contacts between organic layers and metal electrodes. Besides reducing voltage losses, doping thus also gives design freedom in terms of transport layer thickness and electrode choice. The use of doping in applications like OLEDs and organic solar cells is highlighted in this review. Overall, controlled molecular doping can be considered as key enabling technology for many different organic device types that can lead to significant improvements in efficiencies and lifetimes. (Copyright copyright 2013 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  6. Superconductivity in doped semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Bustarret, E., E-mail: Etienne.bustarret@neel.cnrs.fr

    2015-07-15

    A historical survey of the main normal and superconducting state properties of several semiconductors doped into superconductivity is proposed. This class of materials includes selenides, tellurides, oxides and column-IV semiconductors. Most of the experimental data point to a weak coupling pairing mechanism, probably phonon-mediated in the case of diamond, but probably not in the case of strontium titanate, these being the most intensively studied materials over the last decade. Despite promising theoretical predictions based on a conventional mechanism, the occurrence of critical temperatures significantly higher than 10 K has not been yet verified. However, the class provides an enticing playground for testing theories and devices alike.

  7. Nonlinear Elasticity of Doped Semiconductors

    Science.gov (United States)

    2017-02-01

    AFRL-RY-WP-TR-2016-0206 NONLINEAR ELASTICITY OF DOPED SEMICONDUCTORS Mark Dykman and Kirill Moskovtsev Michigan State University...2016 4. TITLE AND SUBTITLE NONLINEAR ELASTICITY OF DOPED SEMICONDUCTORS 5a. CONTRACT NUMBER FA8650-16-1-7600 5b. GRANT NUMBER 5c. PROGRAM...vibration amplitude. 15. SUBJECT TERMS semiconductors , microresonators, microelectromechanical 16. SECURITY CLASSIFICATION OF: 17. LIMITATION OF

  8. Method of doping a semiconductor

    International Nuclear Information System (INIS)

    Yang, C.Y.; Rapp, R.A.

    1983-01-01

    A method is disclosed for doping semiconductor material. An interface is established between a solid electrolyte and a semiconductor to be doped. The electrolyte is chosen to be an ionic conductor of the selected impurity and the semiconductor material and electrolyte are jointly chosen so that any compound formed from the impurity and the semiconductor will have a free energy no lower than the electrolyte. A potential is then established across the interface so as to allow the impurity ions to diffuse into the semiconductor. In one embodiment the semiconductor and electrolyte may be heated so as to increase the diffusion coefficient

  9. A primary exploration to quasi-two-dimensional rare-earth ferromagnetic particles: holmium-doped MoS2 sheet as room-temperature magnetic semiconductor

    Science.gov (United States)

    Chen, Xi; Lin, Zheng-Zhe

    2018-05-01

    Recently, two-dimensional materials and nanoparticles with robust ferromagnetism are even of great interest to explore basic physics in nanoscale spintronics. More importantly, room-temperature magnetic semiconducting materials with high Curie temperature is essential for developing next-generation spintronic and quantum computing devices. Here, we develop a theoretical model on the basis of density functional theory calculations and the Ruderman-Kittel-Kasuya-Yoshida theory to predict the thermal stability of two-dimensional magnetic materials. Compared with other rare-earth (dysprosium (Dy) and erbium (Er)) and 3 d (copper (Cu)) impurities, holmium-doped (Ho-doped) single-layer 1H-MoS2 is proposed as promising semiconductor with robust magnetism. The calculations at the level of hybrid HSE06 functional predict a Curie temperature much higher than room temperature. Ho-doped MoS2 sheet possesses fully spin-polarized valence and conduction bands, which is a prerequisite for flexible spintronic applications.

  10. Ultrafast THz Saturable Absorption in Doped Semiconductors

    DEFF Research Database (Denmark)

    Turchinovich, Dmitry; Hoffmann, Matthias C.

    2011-01-01

    We demonstrate ultrafast THz saturable absorption in n-doped semiconductors by nonlinear THz time-domain spectroscopy. This effect is caused by the semiconductor conductivity modulation due to electron heating and satellite-valley scattering in strong THz fields.......We demonstrate ultrafast THz saturable absorption in n-doped semiconductors by nonlinear THz time-domain spectroscopy. This effect is caused by the semiconductor conductivity modulation due to electron heating and satellite-valley scattering in strong THz fields....

  11. Controlling Molecular Doping in Organic Semiconductors.

    Science.gov (United States)

    Jacobs, Ian E; Moulé, Adam J

    2017-11-01

    The field of organic electronics thrives on the hope of enabling low-cost, solution-processed electronic devices with mechanical, optoelectronic, and chemical properties not available from inorganic semiconductors. A key to the success of these aspirations is the ability to controllably dope organic semiconductors with high spatial resolution. Here, recent progress in molecular doping of organic semiconductors is summarized, with an emphasis on solution-processed p-type doped polymeric semiconductors. Highlighted topics include how solution-processing techniques can control the distribution, diffusion, and density of dopants within the organic semiconductor, and, in turn, affect the electronic properties of the material. Research in these areas has recently intensified, thanks to advances in chemical synthesis, improved understanding of charged states in organic materials, and a focus on relating fabrication techniques to morphology. Significant disorder in these systems, along with complex interactions between doping and film morphology, is often responsible for charge trapping and low doping efficiency. However, the strong coupling between doping, solubility, and morphology can be harnessed to control crystallinity, create doping gradients, and pattern polymers. These breakthroughs suggest a role for molecular doping not only in device function but also in fabrication-applications beyond those directly analogous to inorganic doping. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  12. The role of rare earths in narrow energy gap semiconductors

    International Nuclear Information System (INIS)

    Partin, D.L.; Heremans, J.; Morelli, D.T.; Thrush, C.M.

    1991-01-01

    Narrow energy band gap semiconductors are potentially useful for various devices, including infrared detectors and diode lasers. Rare earth elements have been introduced into lead chalcogenide semiconductors using the molecular beam epitaxy growth process. Europium and ytterbium increase the energy band gap, and nearly lattice-matched heterojunctions have been grown. In some cases, valence changes in the rare earth element cause doping of the alloy. In this paper some initial investigations of the addition of europium to indium antimonide are reported, including the variation of lattice parameter and optical transmission with composition and a negative magnetoresistance effect

  13. Elementary steps in electrical doping of organic semiconductors

    KAUST Repository

    Tietze, Max Lutz; Benduhn, Johannes; Pahner, Paul; Nell, Bernhard; Schwarze, Martin; Kleemann, Hans; Krammer, Markus; Zojer, Karin; Vandewal, Koen; Leo, Karl

    2018-01-01

    Fermi level control by doping is established since decades in inorganic semiconductors and has been successfully introduced in organic semiconductors. Despite its commercial success in the multi-billion OLED display business, molecular doping

  14. Manipulating semiconductor colloidal stability through doping.

    Science.gov (United States)

    Fleharty, Mark E; van Swol, Frank; Petsev, Dimiter N

    2014-10-10

    The interface between a doped semiconductor material and electrolyte solution is of considerable fundamental interest, and is relevant to systems of practical importance. Both adjacent domains contain mobile charges, which respond to potential variations. This is exploited to design electronic and optoelectronic sensors, and other enabling semiconductor colloidal materials. We show that the charge mobility in both phases leads to a new type of interaction between semiconductor colloids suspended in aqueous electrolyte solutions. This interaction is due to the electrostatic response of the semiconductor interior to disturbances in the external field upon the approach of two particles. The electrostatic repulsion between two charged colloids is reduced from the one governed by the charged groups present at the particles surfaces. This type of interaction is unique to semiconductor particles and may have a substantial effect on the suspension dynamics and stability.

  15. Electronegativity and doping in semiconductors

    KAUST Repository

    Schwingenschlö gl, Udo; Chroneos, Alexander; Grimes, R. W.; Schuster, Cosima

    2012-01-01

    Charge transfer predicted by standard models is at odds with Pauling’s electronegativities but can be reconciled by the introduction of a cluster formation model [Schwingenschlögl et al., Appl. Phys. Lett. 96, 242107 (2010)]. Using electronic structure calculations, we investigate p- and n-type doping in silicon and diamond in order to facilitate comparison as C has a higher electronegativity compared to Si. All doping conditions considered can be explained in the framework of the cluster formation model. The implications for codoping strategies and dopant-defect interactions are discussed.

  16. Electronegativity and doping in semiconductors

    KAUST Repository

    Schwingenschlögl, Udo

    2012-08-23

    Charge transfer predicted by standard models is at odds with Pauling’s electronegativities but can be reconciled by the introduction of a cluster formation model [Schwingenschlögl et al., Appl. Phys. Lett. 96, 242107 (2010)]. Using electronic structure calculations, we investigate p- and n-type doping in silicon and diamond in order to facilitate comparison as C has a higher electronegativity compared to Si. All doping conditions considered can be explained in the framework of the cluster formation model. The implications for codoping strategies and dopant-defect interactions are discussed.

  17. Method of doping organic semiconductors

    Science.gov (United States)

    Kloc, Christian Leo [Constance, DE; Ramirez, Arthur Penn [Summit, NJ; So, Woo-Young [New Providence, NJ

    2012-02-28

    A method includes the steps of forming a contiguous semiconducting region and heating the region. The semiconducting region includes polyaromatic molecules. The heating raises the semiconducting region to a temperature above room temperature. The heating is performed in the presence of a dopant gas and the absence of light to form a doped organic semiconducting region.

  18. Phase transitions and doping in semiconductor nanocrystals

    Science.gov (United States)

    Sahu, Ayaskanta

    Colloidal semiconductor nanocrystals are a promising technological material because their size-dependent optical and electronic properties can be exploited for a diverse range of applications such as light-emitting diodes, bio-labels, transistors, and solar cells. For many of these applications, electrical current needs to be transported through the devices. However, while their solution processability makes these colloidal nanocrystals attractive candidates for device applications, the bulky surfactants that render these nanocrystals dispersible in common solvents block electrical current. Thus, in order to realize the full potential of colloidal semiconductor nanocrystals in the next-generation of solid-state devices, methods must be devised to make conductive films from these nanocrystals. One way to achieve this would be to add minute amounts of foreign impurity atoms (dopants) to increase their conductivity. Electronic doping in nanocrystals is still very much in its infancy with limited understanding of the underlying mechanisms that govern the doping process. This thesis introduces an innovative synthesis of doped nanocrystals and aims at expanding the fundamental understanding of charge transport in these doped nanocrystal films. The list of semiconductor nanocrystals that can be doped is large, and if one combines that with available dopants, an even larger set of materials with interesting properties and applications can be generated. In addition to doping, another promising route to increase conductivity in nanocrystal films is to use nanocrystals with high ionic conductivities. This thesis also examines this possibility by studying new phases of mixed ionic and electronic conductors at the nanoscale. Such a versatile approach may open new pathways for interesting fundamental research, and also lay the foundation for the creation of novel materials with important applications. In addition to their size-dependence, the intentional incorporation of

  19. Luminescence in colloidal Mn2+-doped semiconductor nanocrystals

    International Nuclear Information System (INIS)

    Beaulac, Remi; Archer, Paul I.; Gamelin, Daniel R.

    2008-01-01

    Recent advances in nanocrystal doping chemistries have substantially broadened the variety of photophysical properties that can be observed in colloidal Mn 2+ -doped semiconductor nanocrystals. A brief overview is provided, focusing on Mn 2+ -doped II-VI semiconductor nanocrystals prepared by direct chemical synthesis and capped with coordinating surface ligands. These Mn 2+ -doped semiconductor nanocrystals are organized into three major groups according to the location of various Mn 2+ -related excited states relative to the energy gap of the host semiconductor nanocrystals. The positioning of these excited states gives rise to three distinct relaxation scenarios following photoexcitation. A brief outlook on future research directions is provided. - Graphical abstract: Mn 2+ -doped semiconductor nanocrystals are organized into three major groups according to the location of various Mn 2+ -related excited states relative to the energy gap of the host semiconductor nanocrystals. The positioning of these excited states gives rise to three distinct relaxation scenarios following photoexcitation

  20. Unraveling the mechanism of molecular doping in organic semiconductors.

    Science.gov (United States)

    Mityashin, Alexander; Olivier, Yoann; Van Regemorter, Tanguy; Rolin, Cedric; Verlaak, Stijn; Martinelli, Nicolas G; Beljonne, David; Cornil, Jérôme; Genoe, Jan; Heremans, Paul

    2012-03-22

    The mechanism by which molecular dopants donate free charge carriers to the host organic semiconductor is investigated and is found to be quite different from the one in inorganic semiconductors. In organics, a strong correlation between the doping concentration and its charge donation efficiency is demonstrated. Moreover, there is a threshold doping level below which doping simply has no electrical effect. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  1. Two dimensional tunable photonic crystals and n doped semiconductor materials

    International Nuclear Information System (INIS)

    Elsayed, Hussein A.; El-Naggar, Sahar A.; Aly, Arafa H.

    2015-01-01

    In this paper, we theoretically investigate the effect of the doping concentration on the properties of two dimensional semiconductor photonic band structures. We consider two structures; type I(II) that is composed of n doped semiconductor (air) rods arranged into a square lattice of air (n doped semiconductor). We consider three different shapes of rods. Our numerical method is based on the frequency dependent plane wave expansion method. The numerical results show that the photonic band gaps in type II are more sensitive to the changes in the doping concentration than those of type I. In addition, the width of the gap of type II is less sensitive to the shape of the rods than that of type I. Moreover, the cutoff frequency can be strongly tuned by the doping concentrations. Our structures could be of technical use in optical electronics for semiconductor applications

  2. Plasmonic doped semiconductor nanocrystals: Properties, fabrication, applications and perspectives

    Science.gov (United States)

    Kriegel, Ilka; Scotognella, Francesco; Manna, Liberato

    2017-02-01

    Degenerately doped semiconductor nanocrystals (NCs) are of recent interest to the NC community due to their tunable localized surface plasmon resonances (LSPRs) in the near infrared (NIR). The high level of doping in such materials with carrier densities in the range of 1021cm-3 leads to degeneracy of the doping levels and intense plasmonic absorption in the NIR. The lower carrier density in degenerately doped semiconductor NCs compared to noble metals enables LSPR tuning over a wide spectral range, since even a minor change of the carrier density strongly affects the spectral position of the LSPR. Two classes of degenerate semiconductors are most relevant in this respect: impurity doped semiconductors, such as metal oxides, and vacancy doped semiconductors, such as copper chalcogenides. In the latter it is the density of copper vacancies that controls the carrier concentration, while in the former the introduction of impurity atoms adds carriers to the system. LSPR tuning in vacancy doped semiconductor NCs such as copper chalcogenides occurs by chemically controlling the copper vacancy density. This goes in hand with complex structural modifications of the copper chalcogenide crystal lattice. In contrast the LSPR of degenerately doped metal oxide NCs is modified by varying the doping concentration or by the choice of host and dopant atoms, but also through the addition of capacitive charge carriers to the conduction band of the metal oxide upon post-synthetic treatments, such as by electrochemical- or photodoping. The NIR LSPRs and the option of their spectral fine-tuning make accessible important new features, such as the controlled coupling of the LSPR to other physical signatures or the enhancement of optical signals in the NIR, sensing application by LSPR tracking, energy production from the NIR plasmon resonance or bio-medical applications in the biological window. In this review we highlight the recent advances in the synthesis of various different plasmonic

  3. Thermoluminescence dosimetry of rare earth doped calcium ...

    Indian Academy of Sciences (India)

    Unknown

    CaAl2O4) doped with different rare earth ions have been studied and their suitability for radiation dosimetry applications is discussed. It is observed that monocalcium aluminate doped with cerium is a good dosimeter having linear response up to ...

  4. Calculation of the internal electric field within doped semiconductors

    International Nuclear Information System (INIS)

    Phelps, G J

    2012-01-01

    A detailed model for the calculation of the internal potential and electric field profile within doped semiconductors is developed from a first-principles approach and presented in this paper. The model utilizes Poisson's equation and basic Boltzmann statistics to develop a standard nonlinear Poisson–Boltzmann equation (NPBE) for doped semiconductors. The resultant NPBE links the internal electrostatic potential within the doped semiconductor to the doping concentration profile of the semiconductor device under consideration. The NPBE is solved by the application of numerical methods, is general in formulation, supporting multiple simultaneous dopant configurations, and may be applied to any semiconductor type. Calculated results of the electric field profile for various semiconductor dopant structures derived using the model are additionally presented in this paper. The electric field results predicted by the model are shown to be in excellent agreement with those found by other methods. The model may be expanded to accommodate effects involving internal substrate electron–hole pair generation (gemination) caused by photo-ionization for application to and the modeling of solar cell device structures. (paper)

  5. Origin of poor doping efficiency in solution processed organic semiconductors.

    Science.gov (United States)

    Jha, Ajay; Duan, Hong-Guang; Tiwari, Vandana; Thorwart, Michael; Miller, R J Dwayne

    2018-05-21

    Doping is an extremely important process where intentional insertion of impurities in semiconductors controls their electronic properties. In organic semiconductors, one of the convenient, but inefficient, ways of doping is the spin casting of a precursor mixture of components in solution, followed by solvent evaporation. Active control over this process holds the key to significant improvements over current poor doping efficiencies. Yet, an optimized control can only come from a detailed understanding of electronic interactions responsible for the low doping efficiencies. Here, we use two-dimensional nonlinear optical spectroscopy to examine these interactions in the course of the doping process by probing the solution mixture of doped organic semiconductors. A dopant accepts an electron from the semiconductor and the two ions form a duplex of interacting charges known as ion-pair complexes. Well-resolved off-diagonal peaks in the two-dimensional spectra clearly demonstrate the electronic connectivity among the ions in solution. This electronic interaction represents a well resolved electrostatically bound state, as opposed to a random distribution of ions. We developed a theoretical model to recover the experimental data, which reveals an unexpectedly strong electronic coupling of ∼250 cm -1 with an intermolecular distance of ∼4.5 Å between ions in solution, which is approximately the expected distance in processed films. The fact that this relationship persists from solution to the processed film gives direct evidence that Coulomb interactions are retained from the precursor solution to the processed films. This memory effect renders the charge carriers equally bound also in the film and, hence, results in poor doping efficiencies. This new insight will help pave the way towards rational tailoring of the electronic interactions to improve doping efficiencies in processed organic semiconductor thin films.

  6. Study of amorphous semiconductors doped with rare earths (Gd and Er) and conducting polymers by EPR techniques and magnetic susceptibility; Estudo de semicondutores amorfos dopados com terras raras (Gd e Er) e de polimeros condutores atraves das tecnicas de RPE e susceptibilidade magnetica

    Energy Technology Data Exchange (ETDEWEB)

    Sercheli, Mauricio da Silva

    1999-07-01

    This thesis involves the study of amorphous semiconductors and conducting polymers, which have been characterized by EPR and magnetic susceptibility measurements, and to a lesser extent by Raman spectroscopy and RBS. The semiconductors were studied using thin films of silicon doped with rare earth metals, e.g. erbium and gadolinium, which had their magnetic properties studied. Using these studies we could determine the state of valence of the rare earths as well as their concentrations in the silicon matrix. According to our results, the valence of the rare earth metal ions is 3+, and we were able to conclude that 4f electronic shells could not be used for the calculation of the conducting band in this system. Furthermore, the analysis of the data on the magnetic susceptibility of the Er{sup 3+} ion with cubic crystalline acting field, gave us the opportunity to estimate the overall splitting of their electronic states for the first time. The conducting polymers were studied using samples of poly(3-methylthiophene) doped with ClO{sub 4}{sup -}, which show a phase transition in the range of 230 K to 130 K. The electron paramagnetic resonance also gives important information on the crystallization, doping level and the presence of polarons or bipolarons in conducting polymers. (author)

  7. Nuclear relaxation in semiconductors doped with magnetic impurities

    International Nuclear Information System (INIS)

    Mel'nichuk, S.V.; Tovstyuk, N.K.

    1984-01-01

    The temperature and concentration dependences are investigated of the nuclear spin-lattice relaxation time with account of spin diffusion for degenerated and non-degenerated semicon- ductors doped with magnetic impurities. In case of the non-degenerated semiconductor the time is shown to grow with temperature, while in case of degenerated semiconductor it is practically independent of temperature. The impurity concentration growth results in decreasing the spin-lattice relaxation time

  8. Rare earth oxide doping in oxide cathodes

    International Nuclear Information System (INIS)

    Engelsen, Daniel den; Gaertner, Georg

    2006-01-01

    The effect on life performance and poisoning with O 2 by doping oxide cathodes with rare earth oxides and pseudo rare earth oxides, notably yttria, is qualitatively explained in terms of electrolysis of BaO during emission of electrons. Doped cathodes show less electrolysis and consume therefore less Ba during life: consequently, doped cathodes have a better life performance. However, the lower Ba-production makes doped cathodes more sensitive to oxygen poisoning. The experimentally found relation between conductivity and yttria concentration was the motive to propose a new model for the crystal imperfections in BaO. In this new imperfection model most Y 3+ -ions will combine with barium vacancies, therefore, the increase of the conductivity is modest and also the effect on the position of the Fermi level is modest. By assuming a combination of bulk and surface conductivity, the agreement between experiment and theory can be improved further

  9. Nonlinear optical studies in semiconductor-doped glasses under ...

    Indian Academy of Sciences (India)

    Abstract. Nonlinear optical studies in semiconductor-doped glasses (SDGs) are per- formed under femtosecond laser pulse excitation. Z-scan experiments with 800 nm wave- length pulses are used to excite SDG samples in the resonance and non-resonance regimes. Schott colour glass filter OG 515 shows stronger ...

  10. Metal-doped semiconductor nanoparticles and methods of synthesis thereof

    Science.gov (United States)

    Ren, Zhifeng (Inventor); Chen, Gang (Inventor); Poudel, Bed (Inventor); Kumar, Shankar (Inventor); Wang, Wenzhong (Inventor); Dresselhaus, Mildred (Inventor)

    2009-01-01

    The present invention generally relates to binary or higher order semiconductor nanoparticles doped with a metallic element, and thermoelectric compositions incorporating such nanoparticles. In one aspect, the present invention provides a thermoelectric composition comprising a plurality of nanoparticles each of which includes an alloy matrix formed of a Group IV element and Group VI element and a metallic dopant distributed within the matrix.

  11. Elementary steps in electrical doping of organic semiconductors

    KAUST Repository

    Tietze, Max Lutz

    2018-03-15

    Fermi level control by doping is established since decades in inorganic semiconductors and has been successfully introduced in organic semiconductors. Despite its commercial success in the multi-billion OLED display business, molecular doping is little understood, with its elementary steps controversially discussed and mostly-empirical-materials design. Particularly puzzling is the efficient carrier release, despite a presumably large Coulomb barrier. Here we quantitatively investigate doping as a two-step process, involving single-electron transfer from donor to acceptor molecules and subsequent dissociation of the ground-state integer-charge transfer complex (ICTC). We show that carrier release by ICTC dissociation has an activation energy of only a few tens of meV, despite a Coulomb binding of several 100 meV. We resolve this discrepancy by taking energetic disorder into account. The overall doping process is explained by an extended semiconductor model in which occupation of ICTCs causes the classically known reserve regime at device-relevant doping concentrations.

  12. OPTICAL AND DYNAMIC PROPERTIES OF UNDOPED AND DOPED SEMICONDUCTOR NANOSTRUCTURES

    Energy Technology Data Exchange (ETDEWEB)

    Grant, C D; Zhang, J Z

    2007-09-28

    This chapter provides an overview of some recent research activities on the study of optical and dynamic properties of semiconductor nanomaterials. The emphasis is on unique aspects of these properties in nanostructures as compared to bulk materials. Linear, including absorption and luminescence, and nonlinear optical as well as dynamic properties of semiconductor nanoparticles are discussed with focus on their dependence on particle size, shape, and surface characteristics. Both doped and undoped semiconductor nanomaterials are highlighted and contrasted to illustrate the use of doping to effectively alter and probe nanomaterial properties. Some emerging applications of optical nanomaterials are discussed towards the end of the chapter, including solar energy conversion, optical sensing of chemicals and biochemicals, solid state lighting, photocatalysis, and photoelectrochemistry.

  13. The alkali and alkaline earth metal doped ZnO nanotubes: DFT studies

    International Nuclear Information System (INIS)

    Peyghan, Ali Ahmadi; Noei, Maziar

    2014-01-01

    Doping of several alkali and alkaline earth metals into sidewall of an armchair ZnO nanotube has been investigated by employing the density functional theory in terms of energetic, geometric, and electronic properties. It has been found that doping processes of the alkali and alkaline metals are endothermic and exothermic, respectively. Based on the results, contrary to the alkaline metal doping, the electronic properties of the tube are much more sensitive to alkali metal doping so that it is transformed from intrinsic semiconductor with HOMO–LUMO energy gap of 3.77 eV to an extrinsic semiconductor with the energy gap of ∼1.11–1.95 eV. The doping of alkali and alkaline metals increases and decreases the work function of the tube, respectively, which may influence the electron emission from the tube surface

  14. Spin Hall Effect in Doped Semiconductor Structures

    Science.gov (United States)

    Tse, Wang-Kong; Das Sarma, Sankar

    2006-03-01

    We present a microscopic theory of the extrinsic spin Hall effect based on the diagrammatic perturbation theory. Side-jump (SJ) and skew-scattering (SS) contributions are explicitly taken into account to calculate the spin Hall conductivity, and we show their effects scale as σxy^SJ/σxy^SS ˜(/τ)/ɛF, where τ being the transport relaxation time. Motivated by recent experimental work we apply our theory to n-doped and p-doped 3D and 2D GaAs structures, obtaining analytical formulas for the SJ and SS contributions. Moreover, the ratio of the spin Hall conductivity to longitudinal conductivity is found as σs/σc˜10-3-10-4, in reasonable agreement with the recent experimental results of Kato et al. [Science 306, 1910 (2004)] in n-doped 3D GaAs system.

  15. Charge transport in electrically doped amorphous organic semiconductors.

    Science.gov (United States)

    Yoo, Seung-Jun; Kim, Jang-Joo

    2015-06-01

    This article reviews recent progress on charge generation by doping and its influence on the carrier mobility in organic semiconductors (OSs). The doping induced charge generation efficiency is generally low in OSs which was explained by the integer charge transfer model and the hybrid charge transfer model. The ionized dopants formed by charge transfer between hosts and dopants can act as Coulomb traps for mobile charges, and the presence of Coulomb traps in OSs broadens the density of states (DOS) in doped organic films. The Coulomb traps strongly reduce the carrier hopping rate and thereby change the carrier mobility, which was confirmed by experiments in recent years. In order to fully understand the doping mechanism in OSs, further quantitative and systematic analyses of charge transport characteristics must be accomplished. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  16. Transmutation doping of semiconductors by charged particles (review)

    International Nuclear Information System (INIS)

    Kozlovskii, V.V.; Zakharenkov, L.F.; Shustrov, B.A.

    1992-01-01

    A review is given of the state of the art in one of the current topics in radiation doping of semiconductors, which is process of nuclear transmutation doping (NTD) charged particles. In contrast to the neutron and photonuclear transmutation doping, which have been dealt with in monographs and reviews, NTD caused by the action of charged particles is a subject growing very rapidly in the last 10-15 years, but still lacking systematic accounts. The review consists of three sections. The first section deals with the characteristics of nuclear reactions in semiconductors caused by the action of charged particles: the main stress is on the modeling of NTD processes in semiconductors under the action of charged particles. An analysis is made of the modeling intended to give the total numbers of donors and acceptor impurities introduced by the NTD process, to optimize the compensation coefficients, and to estimate the distributions of the dopants with depth in a semiconductor crystal. In the second section the state of the art of experimental investigations of NTD under the influence of charged particles is considered. In view of the specific objects that have been investigated experimntally, the second section is divided into three subsections: silicon, III-V compounds, other semiconductors and related materials (such as high-temperature superconductors, ferroelectric films, etc.). An analysis is made of the communications reporting experimental data on the total numbers of dopants which are introduced, concentration of the electrically active fraction of the impurity, profiles of the dopant distributions, and conditions for efficient annealing of radiation defects. The third section deals with the suitability of NTD by charged particles for the fabrication of semiconductor devices. 45 refs

  17. Electrical characterization of doped semiconductor nanostructures with scanning microwave microscopy

    Energy Technology Data Exchange (ETDEWEB)

    Fenner, Matthias A.; Tanbakuchi, Hassan [Agilent Technologies, Kronberg (Germany); Streit, Stephan; Baumgart, Christine; Helm, Manfred; Schmidt, Heidemarie [Institute of Ion Beam Physics and Materials Research, Forschungszentrum Dresden-Rossendorf e.V., Dresden (Germany)

    2010-07-01

    Highly sensitive scanning microwave microscopy (SMM) with a capacitance resolution in the aF range has been used to investigate the electrical properties of doped semiconductor nanostructures in the microwave frequency range from 1.5 GHz to 6 GHz at different dc offset biases. The microwave signal S11 reflected by the sample is related to the impedance of the sample. Superimposing an ac voltage in the kHz range one also gains information about the derivative of the S11 signal (dC/dV), which is dependent on the doping density in the semiconductor, circuit resistance, and reactance. We investigated a static random access memory (SRAM) cell and one cross-sectionally prepared Si epilayer structured sample. The derivative of S11 strongly depends on the dc offset bias. The Si epilayer sample reveals the strongest dependence on f{sub ac} and also on the biasing history during the SMM measurements.

  18. The origin of magnetism in anatase Co-doped TiO2 magnetic semiconductors

    NARCIS (Netherlands)

    Lee, Y.J.

    2010-01-01

    Dilute magnetic semiconductors (DMS) can be tailored by doping a small amount of elements containing a magnetic moment into host semiconductors, which leads to a new class of semiconductors with the functionality of tunable magnetic properties. Recently, oxide semiconductors have attained interests

  19. Modulation doping and delta doping of III-V compound semiconductors

    NARCIS (Netherlands)

    Hendriks, P.; Zwaal, E.A.E.; Haverkort, J.E.M.; Wolter, J.H.; Razeghi, M.

    1991-01-01

    The transport properties of the 2D electron gas produced by modulation doping of compound semiconductors are reviewed with attention given to the properties at high electric fields. Experimental studies are discussed in which the transport properties lead to insights into current instabilities and

  20. Rare-earth doped boron nitride nanotubes: Synthesis and characterization

    Energy Technology Data Exchange (ETDEWEB)

    Silva, Wellington Marcos; Sousa, Edesia Martins Barros de, E-mail: wellingtonmarcos@yahoo.com.br [Centro de Desenvolvimento da Tecnologia Nuclear (CDTN/CNEN-MG), Belo Horizonte, MG (Brazil)

    2016-07-01

    Full text: Boron nitride is a heat and chemically resistant refractory compound of boron and nitrogen atoms with the chemical formula BN. This structure exists in various crystalline forms that are isoelectronic to a similarly structured carbon lattice. The hexagonal form (h-BN) corresponding to graphite is the most stable and soft among BN polymorph. However, boron nitride nanotubes (BNNTs) were first time synthesized in 1995 [1] and have a type of one-dimensional (1D) nanostructure. Recently the BNNTs have attracted significant interest for scientific and technological applications due to their Wide bandgap. The Wide-bandgap semiconductors doped with rare-earth are considered as a new type of luminescent material, combining special Wide bandgap semiconducting properties with the rare-earth luminescence feature. BNNTs have a stable wide bandgap of 5.5 eV and super thermal and chemical stabilities, which make BNNTs an ideal nanosized luminescent material [2]. In this study, we report a simple and efficient route for the synthesis of BNNTs doped with samarium and europium. High quality BNNTs doped was produced via CVD technique using NH{sub 3} and N{sub 2} gases as source. Boron amorphous, catalyst and oxides rare-earth powder were used as precursor. Detailed studies involving energy-dispersive X-ray spectroscopy (EDS), X-ray diffraction (XRD), Raman spectroscopy, Fourier-transform infrared spectroscopy (FTIR), scanning electron microscope (SEM) and transmission electron microscope (TEM) were performed in order to characterize the BNNTs as grown. [1] Chopra, N. G.; Luyken, R. J. et al. Science, v. 269, p. 966-967, 1995. [2] Chen, H.; Chen, Y. et al. Adv. Matter. v. 19, p. 1845-1848, 2007. (author)

  1. Rare-earth doped boron nitride nanotubes: Synthesis and characterization

    International Nuclear Information System (INIS)

    Silva, Wellington Marcos; Sousa, Edesia Martins Barros de

    2016-01-01

    Full text: Boron nitride is a heat and chemically resistant refractory compound of boron and nitrogen atoms with the chemical formula BN. This structure exists in various crystalline forms that are isoelectronic to a similarly structured carbon lattice. The hexagonal form (h-BN) corresponding to graphite is the most stable and soft among BN polymorph. However, boron nitride nanotubes (BNNTs) were first time synthesized in 1995 [1] and have a type of one-dimensional (1D) nanostructure. Recently the BNNTs have attracted significant interest for scientific and technological applications due to their Wide bandgap. The Wide-bandgap semiconductors doped with rare-earth are considered as a new type of luminescent material, combining special Wide bandgap semiconducting properties with the rare-earth luminescence feature. BNNTs have a stable wide bandgap of 5.5 eV and super thermal and chemical stabilities, which make BNNTs an ideal nanosized luminescent material [2]. In this study, we report a simple and efficient route for the synthesis of BNNTs doped with samarium and europium. High quality BNNTs doped was produced via CVD technique using NH 3 and N 2 gases as source. Boron amorphous, catalyst and oxides rare-earth powder were used as precursor. Detailed studies involving energy-dispersive X-ray spectroscopy (EDS), X-ray diffraction (XRD), Raman spectroscopy, Fourier-transform infrared spectroscopy (FTIR), scanning electron microscope (SEM) and transmission electron microscope (TEM) were performed in order to characterize the BNNTs as grown. [1] Chopra, N. G.; Luyken, R. J. et al. Science, v. 269, p. 966-967, 1995. [2] Chen, H.; Chen, Y. et al. Adv. Matter. v. 19, p. 1845-1848, 2007. (author)

  2. N-doping of organic semiconductors by bis-metallosandwich compounds

    Science.gov (United States)

    Barlow, Stephen; Qi, Yabing; Kahn, Antoine; Marder, Seth; Kim, Sang Bok; Mohapatra, Swagat K.; Guo, Song

    2016-01-05

    The various inventions disclosed, described, and/or claimed herein relate to the field of methods for n-doping organic semiconductors with certain bis-metallosandwich compounds, the doped compositions produced, and the uses of the doped compositions in organic electronic devices. Metals can be manganese, rhenium, iron, ruthenium, osmium, rhodium, or iridium. Stable and efficient doping can be achieved.

  3. Radiation doping methods of semiconductor materials: the nuclear doping by charged particles

    International Nuclear Information System (INIS)

    Kozlovskii, V.V.; Zakharenkov, L.F.

    1996-01-01

    A review is given of the state of the art in one of the current topics in radiation doping of semiconductors, which is process of nuclear transmutation doping (NTD) by charged particles. In contrast to the neutron and photonuclear transmutation doping, which have been dealt with in monograths and reviews, NTD caused by the action of charged particles is a subject growing very rapidly in the last 10-15 years, but still lacking systematic accounts. The review consists of three sections. The first section deals with the characteristics of nuclear reactions in semiconductors caused by the action of charged particles: the main stress is on the modeling of NTD processes in semiconductors under the action of charged particles. In the second section the state of the art of experimental investigations of NTD under the influence of charged particles is considered. An analysis is made of the communications reporting experimental data on the total numbers of dopants which are introduced, concentration of the electrically active fraction of the impurity, profiles of the dopant distributions, and conditions for efficient annealing of radiation defects. The third section deals with the suitability of NTD by charged particles for the fabrication of semiconductor devices. (author)

  4. Luminescence studies of rare earth doped dosimeters

    International Nuclear Information System (INIS)

    Karali, T.

    1999-10-01

    The main objective of this thesis has been to address the applications and fundamentals of thermoluminescence (TL) and to contribute to existing knowledge about TL mechanisms in materials which are applied as radiation dosimeters. This issue has been explored for a long time but the mechanisms lack completeness and certainty. TL, Radioluminescence (RL) and Radio-thermoluminescence (RLTL) measurements have been conducted on a high sensitivity TL spectrometer both at low (30-290 K) and high (25-400 deg. C) temperatures, and different heat treatments (furnace and laser) were conducted in order to study the possible impurity clustering which changes the TL spectra and efficiency of the dosimeters. Studies have been based on three different host structure, namely sulphate, borates and zircon. The spectra of calcium sulphate samples doped with Tm 3+ and Dy 3+ at different concentration were examined using TL, RL and RLTL. Similar procedures were applied to the borate samples. Modifications of the material by thermal treatments convert the state of dispersion of the rare earth ions between isolated, pair or defect clusters, which alter the dosimeter efficiency. In some cases, modified geometries are detectable by movement of the line emissions such as for quenched samples which are attributable to new microcrystal line phases. The study of co-doped samples showed unequivocal evidence of a glow peak displacement of the two dopants within a single sample. This result supports the new view that RE 3+ ions could form part of a complex defect acting as both charge trap and recombination centres. Pulsed laser heating with a UV laser changed the glow curve shape and lead to strong signals. The detailed mechanisms for this process are discussed. The RL and TL spectra of synthetic zircon crystals doped with different RE 3+ ions (Pr, Sm, Eu, Gd, Ho, Dy, Er, and Yb) and phosphorus are reported. Even though there is some intrinsic emission from the host lattice the major signals are

  5. Excitonic optical bistability in n-type doped semiconductors

    International Nuclear Information System (INIS)

    Nguyen Ba An; Le Thi Cat Tuong

    1991-07-01

    A resonant monochromatic pump laser generates coherent excitons in an n-type doped semiconductor. Both exciton-exciton and exciton-donor interactions come into play. The former interaction can give rise to the appearance of optical bistability which is heavily influenced by the latter one. When optical bistability occurs at a fixed laser frequency both its holding intensity and hysteresis loop size are shown to decrease with increasing donor concentration. Two possibilities are suggested for experimentally determining one of the two parameters of the system - the exciton-donor coupling constant and the donor concentration, if the other parameter is known beforehand. (author). 36 refs, 2 figs

  6. A process for doping an amorphous semiconductor material by ion implantation

    International Nuclear Information System (INIS)

    Kalbitzer, S.; Muller, G.; Spear, W.E.; Le Comber, P.G.

    1979-01-01

    In a process for doping a body of amorphous semiconductor material, the body is held at a predetermined temperature above 20 deg. C which is below the recrystallization temperature of the amorphous semiconductor material during bombardment by accelerated ions of a predetermined doping material. (U.K.)

  7. Rare-earth-doped fluorozirconate fiber lasers

    International Nuclear Information System (INIS)

    Brierly, M.C.; France, P.W.; Moore, M.W.; Davey, S.T.

    1988-01-01

    Rare-earth-doped fiber lasers fabricated using silica-based fibers are rapidly becoming an established technology. Simultaneously, in the search for lower losses to achieve longer repeaterless communications links, another fiber technology based on fluorozirconate glasses is emerging. Fluorozirconate glass systems are known to be suitable laser hosts, and the authors have already reported Nd-doped fiber lasers using this technology. Recently the authors have used a 0.5-m length of 44-μm core fluorozirconate fiber doped with 1000 ppm of Nd 3+ ions in a longitudinally pumped Fabry-Perot cavity with a 90% output coupler. They observed lasing at 1.05 μm with a threshold of 33-mW launched power at 514 nm and a slope efficiency of 16.8%. The authors attribute this improvement to the higher dopant concentration, better fiber to mirror coupling, and more optimum output coupler reflectivity. In addition the same fiber used with two high-reflector mirrors at 1.35μm produced lasing at 1.35μm with a threshold of 60-mW launched power

  8. Photo-Induced conductivity of heterojunction GaAs/Rare-Earth doped SnO2

    Directory of Open Access Journals (Sweden)

    Cristina de Freitas Bueno

    2013-01-01

    Full Text Available Rare-earth doped (Eu3+ or Ce3+ thin layers of tin dioxide (SnO2 are deposited by the sol-gel-dip-coating technique, along with gallium arsenide (GaAs films, deposited by the resistive evaporation technique. The as-built heterojunction has potential application in optoelectronic devices, because it may combine the emission from the rare-earth-doped transparent oxide, with a high mobility semiconductor. Trivalent rare-earth-doped SnO2 presents very efficient emission in a wide wavelength range, including red (in the case of Eu3+ or blue (Ce3+. The advantage of this structure is the possibility of separation of the rare-earth emission centers, from the electron scattering, leading to an indicated combination for electroluminescence. Electrical characterization of the heterojunction SnO2:Eu/GaAs shows a significant conductivity increase when compared to the conductivity of the individual films. Monochromatic light excitation shows up the role of the most external layer, which may act as a shield (top GaAs, or an ultraviolet light absorber sink (top RE-doped SnO2. The observed improvement on the electrical transport properties is probably related to the formation of short conduction channels in the semiconductors junction with two-dimensional electron gas (2DEG behavior, which are evaluated by excitation with distinct monochromatic light sources, where the samples are deposited by varying the order of layer deposition.

  9. Methods for enhancing P-type doping in III-V semiconductor films

    Science.gov (United States)

    Liu, Feng; Stringfellow, Gerald; Zhu, Junyi

    2017-08-01

    Methods of doping a semiconductor film are provided. The methods comprise epitaxially growing the III-V semiconductor film in the presence of a dopant, a surfactant capable of acting as an electron reservoir, and hydrogen, under conditions that promote the formation of a III-V semiconductor film doped with the p-type dopant. In some embodiments of the methods, the epitaxial growth of the doped III-V semiconductor film is initiated at a first hydrogen partial pressure which is increased to a second hydrogen partial pressure during the epitaxial growth process.

  10. Metallization and superconductivity in a multizone doped semiconductor: boron-doped diamond

    International Nuclear Information System (INIS)

    Loktev, V.M.; Pogorelov, Yu.G.

    2005-01-01

    Within the framework of Anderson's s - d hybride model, metallization of a semiconductor at collectivization of impurity states is discussed. Taking in mind the description of boron-doped diamond CB x , the model is generalized for the case of the multiband initial spectrum and cluster acceptor states, due to the pairs of the nearest neighbor impurities ('impurity dumbbells'). The parameters of the calculated band of collective impurity states are compared to those observed in metallized and superconducting CB x

  11. Diffusion in Intrinsic and Highly Doped III-V Semiconductors

    CERN Multimedia

    Stolwijk, N

    2002-01-01

    %title\\\\ \\\\Diffusion plays a key role in the fabrication of semiconductor devices. The diffusion of atoms in crystals is mediated by intrinsic point defects. Investigations of the diffusion behaviour of self- and solute atoms on the Ga sublattice of gallium arsenide led to the conclusion that in intrinsic and n-type material charged Ga vacancies are involved in diffusion processes whereas in p-type material diffusion if governed by charged Ga self-interstitials. Concerning the As sublattice of gallium arsenide there is a severe lack of reliable diffusion data. The few available literature data on intrinsic GaAs are not mutually consistent. A systematic study of the doping dependence of diffusion is completely missing. The most basic diffusion process - self-diffusion of As and its temperature and doping dependence - is practically not known. For GaP a similar statement holds.\\\\ \\\\The aim of the present project is to perform a systematic diffusion study of As diffusion in intrinsic and doped GaAs and in GaP. P...

  12. Accurate calculation of field and carrier distributions in doped semiconductors

    Directory of Open Access Journals (Sweden)

    Wenji Yang

    2012-06-01

    Full Text Available We use the numerical squeezing algorithm(NSA combined with the shooting method to accurately calculate the built-in fields and carrier distributions in doped silicon films (SFs in the micron and sub-micron thickness range and results are presented in graphical form for variety of doping profiles under different boundary conditions. As a complementary approach, we also present the methods and the results of the inverse problem (IVP - finding out the doping profile in the SFs for given field distribution. The solution of the IVP provides us the approach to arbitrarily design field distribution in SFs - which is very important for low dimensional (LD systems and device designing. Further more, the solution of the IVP is both direct and much easy for all the one-, two-, and three-dimensional semiconductor systems. With current efforts focused on the LD physics, knowing of the field and carrier distribution details in the LD systems will facilitate further researches on other aspects and hence the current work provides a platform for those researches.

  13. Study of lead iodide semiconductor crystals doped with silver

    Czech Academy of Sciences Publication Activity Database

    Matuchová, Marie; Žďánský, Karel; Zavadil, Jiří; Maixner, J.; Alexiev, D.; Procházková, Olga

    2006-01-01

    Roč. 9, 1/3 (2006), s. 394-398 ISSN 1369-8001. [DRIP /11./. Beijing, 15.09.2005-19.09.2005] R&D Projects: GA ČR(CZ) GA102/03/0379; GA ČR(CZ) GA102/04/0959; GA AV ČR(CZ) KSK1010104 Institutional research plan: CEZ:AV0Z20670512 Keywords : rare earth compounds * detector circuits * semiconductor technology Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering Impact factor: 1.038, year: 2006

  14. Two-color mid-infrared spectroscopy of optically doped semiconductors

    International Nuclear Information System (INIS)

    Forcales, M.; Klik, M.A.J.; Vinh, N.Q.; Phillips, J.; Wells, J-P.R.; Gregorkiewicz, T.

    2003-01-01

    Optical doping is an attractive method to tailor photonic properties of semiconductor matrices for development of solid-state electroluminescent structures. For practical applications, thermal stability of emission obtained from these materials is required. Thermal processes can be conveniently investigated by two-color spectroscopy in the visible and the mid-infrared. Free-electron laser is a versatile high-brilliance source of radiation in the latter spectral range. In this contribution, we briefly review some of the results obtained recently by the two-color spectroscopy with a free-electron laser in different semiconductors optically doped with rare earth and transition metal ions. Effects leading to both enhancement and quenching of emission from optical dopants will be presented. For InP:Yb, Si:Er, and Si:Cu activation of particular optically induced non-radiative recombination paths will be shown. For Si:Er and Si:Ag, observation of a low temperature optical memory effect will be reported

  15. Second International Conference on Neutron Transmutation Doping in Semiconductors

    CERN Document Server

    Neutron Transmutation Doping in Semiconductors

    1979-01-01

    This volume contains the invited and contributed papers presented at the Second International Conference on Neutron Transmutation Doping in Semiconductors held April 23-26, 1978 at the University of Missouri-Columbia. The first "testing of the waters" symposium on this subject was organized by John Cleland and Dick Wood of the Solid-State Division of Oak Ridge National Laboratory in April of 1976, just one year after NTD-silicon appeared on the marketplace. Since this first meeting, NTD-silicon has become established as the starting material for the power device industry and reactor irradiations are now measured in tens of tons of material per annum making NTD processing the largest radiation effects technology in the semiconductor industry. Since the first conference at Oak Ridge, new applications and irradiation techniques have developed. Interest in a second con­ ference and in publishing the proceedings has been extremely high. The second conference at the University of Missouri was attended by 114 perso...

  16. Nonlinear optical effects in pure and N-doped semiconductors

    International Nuclear Information System (INIS)

    Donlagic, N.S.

    2000-01-01

    Over the last decades, the nonlinear optical properties of condensed matter systems have been an attractive and fruitful field of research. While the linear response functions of solids provide information about the elementary excitations of the systems, nonlinear optical experiments give insight into the dynamics of the fundamental many-body processes which are initiated by the external excitations. Stimulated by the experimental results, new theoretical concepts and methods have been developed in order to relate the observed phenomena to the microscopic properties of the investigated materials. The present work deals with the study of the nonlinear dynamics of the optical interband polarization in pure and n-doped semiconductors.In the first part of the thesis, the relaxation behavior of optically excited electron-hole pairs in a one-dimensional semiconductor, which are coupled to longitudinal optical phonons with an initial lattice temperature T>0, is studied with the help of quantum kinetic equations. Apart from Hartree-Fock-like Coulomb contributions, these equations contain additional Coulomb terms, the so-called vertex corrections, by which the influence of the electron-electron interaction on the electron-phonon scattering processes is taken into account. The numerical studies indicate that the vertex corrections are essential for a correct description of the excitonic dynamics.In the second part of the thesis, the attention is shifted to the characteristics of the optical response of a one-dimensional n-doped two-band semiconductor whose conduction band has been linearized with respect to the two Fermi points. Due to the linearization it is possible to calculate the linear and nonlinear response functions of the interacting electron system exactly. These response functions are then used in order to determine the linear absorption spectrum and the time-integrated signal of a degenerated four-wave-mixing experiment. It is shown that the well-known features

  17. Spectroscopy of Charge Carriers and Traps in Field-Doped Single Crystal Organic Semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Zhu, Xiaoyang [Columbia Univ., New York, NY (United States); Frisbie, Daniel [Univ. of Minnesota, Minneapolis, MN (United States)

    2017-03-31

    The proposed research aims to achieve quantitative, molecular level understanding of charge carriers and traps in field-doped crystalline organic semiconductors via in situ linear and nonlinear optical spectroscopy, in conjunction with transport measurements and molecular/crystal engineering.

  18. Photoelectron spectroscopy on doped organic semiconductors and related interfaces

    Energy Technology Data Exchange (ETDEWEB)

    Olthof, Selina Sandra

    2010-06-08

    Using photoelectron spectroscopy, we show measurements of energy level alignment of organic semiconducting layers. The main focus is on the properties and the influence of doped layers. The investigations on the p-doping process in organic semiconductors show typical charge carrier concentrations up to 2.10{sup 20} cm{sup -3}. By a variation of the doping concentration, an over proportional influence on the position of the Fermi energy is observed. Comparing the number of charge carriers with the amount of dopants present in the layer, it is found that only 5% of the dopants undergo a full charge transfer. Furthermore, a detailed investigation of the density of states beyond the HOMO onset reveals that an exponentially decaying density of states reaches further into the band gap than commonly assumed. For an increasing amount of doping, the Fermi energy gets pinned on these states which suggests that a significant amount of charge carriers is present there. The investigation of metal top and bottom contacts aims at understanding the asymmetric current-voltage characteristics found for some symmetrically built device stacks. It can be shown that a reaction between the atoms from the top contact with the molecules of the layer leads to a change in energy level alignment that produces a 1.16 eV lower electron injection barrier from the top. Further detailed investigations on such contacts show that the formation of a silver top contact is dominated by diffusion processes, leading to a broadened interface. However, upon insertion of a thin aluminum interlayer this diffusion can be stopped and an abrupt interface is achieved. Furthermore, in the case of a thick silver top contact, a monolayer of molecules is found to oat on top of the metal layer, almost independent on the metal layer thickness. Finally, several device stacks are investigated, regarding interface dipoles, formation of depletion regions, energy alignment in mixed layers, and the influence of the built

  19. A divalent rare earth oxide semiconductor: Yttrium monoxide

    Energy Technology Data Exchange (ETDEWEB)

    Kaminaga, Kenichi; Sei, Ryosuke [Department of Chemistry, The University of Tokyo, Tokyo 113-0033 (Japan); Department of Chemistry, Tohoku University, Sendai 980-8578 (Japan); Hayashi, Kouichi [Department of Environmental and Materials Engineering, Nagoya Institute of Technology, Nagoya 466-8555 (Japan); Happo, Naohisa [School of Information Sciences, Hiroshima City University, Hiroshima 731-3194 (Japan); Tajiri, Hiroo [Japan Synchrotron Radiation Research Institute (JASRI)/SPring-8, Sayo 679-5198 (Japan); Oka, Daichi; Fukumura, Tomoteru, E-mail: tomoteru.fukumura.e4@tohoku.ac.jp [Department of Chemistry, Tohoku University, Sendai 980-8578 (Japan); Hasegawa, Tetsuya [Department of Chemistry, The University of Tokyo, Tokyo 113-0033 (Japan)

    2016-03-21

    Rare earth oxides are usually widegap insulators like Y{sub 2}O{sub 3} with closed shell trivalent rare earth ions. In this study, solid phase rock salt structure yttrium monoxide, YO, with unusual valence of Y{sup 2+} (4d{sup 1}) was synthesized in a form of epitaxial thin film by pulsed laser deposition method. YO has been recognized as gaseous phase in previous studies. In contrast with Y{sub 2}O{sub 3}, YO was dark-brown colored and narrow gap semiconductor. The tunable electrical conductivity ranging from 10{sup −1} to 10{sup 3} Ω{sup −1 }cm{sup −1} was attributed to the presence of oxygen vacancies serving as electron donor. Weak antilocalization behavior observed in magnetoresistance indicated significant role of spin-orbit coupling as a manifestation of 4d electron carrier.

  20. ZnO-based semiconductors studied by Raman spectroscopy. Semimagnetic alloying, doping, and nanostructures

    Energy Technology Data Exchange (ETDEWEB)

    Schumm, Marcel

    2009-07-01

    ZnO-based semiconductors were studied by Raman spectroscopy and complementary methods (e.g. XRD, EPS) with focus on semimagnetic alloying with transition metal ions, doping (especially p-type doping with nitrogen as acceptor), and nanostructures (especially wet-chemically synthesized nanoparticles). (orig.)

  1. Prediction of two-dimensional diluted magnetic semiconductors: Doped monolayer MoS2 systems

    KAUST Repository

    Cheng, Yingchun; Guo, Z. B.; Mi, W. B.; Schwingenschlö gl, Udo; Zhu, Zhiyong

    2013-01-01

    Using first-principles calculations, we propose a two-dimensional diluted magnetic semiconductor: monolayer MoS2 doped by transition metals. Doping of transition metal atoms from the IIIB to VIB groups results in nonmagnetic states, since the number

  2. Doping of semiconductors using radiation defects produced by irradiation with protons and alpha particles

    International Nuclear Information System (INIS)

    Kozlov, V.A.; Kozlovski, V.V.

    2001-01-01

    One of the modern methods for modifying semiconductors using beams of protons and alpha particles is analyzed; this modification is accomplished by the controlled introduction of radiation defects into the semiconductor. It is shown that doping semiconductors with radiation defects produced by irradiation with light ions opens up fresh opportunities for controlling the properties of semiconducting materials and for the development of new devices designed for optoelectronics, microelectronics, and nanoelectronics based on these materials; these devices differ favorably from those obtained by conventional doping methods, i.e., by diffusion, epitaxy, and ion implantation

  3. Bonding and doping of simple icosahedral-boride semiconductors

    International Nuclear Information System (INIS)

    Emin, David

    2004-01-01

    A simple model of the bonding and doping of a series of icosahedral-boride insulators is presented. Icosahedral borides contain clusters of boron atoms that occupy the 12 vertices of icosahedra. This particular series of icosahedral borides share both the stoichiometry B 12 X 2 , where X denotes a group V element (P or As), and a common lattice structure. The inter-icosahedral bonding of these icosahedral borides is contrasted with that of B 12 O 2 and with that of α-rhombohedral boron. Knowledge of the various types of inter-icosahedral bonding is used as a basis to address effects of inter-icosahedral atomic substitutions. The inter-icosahedral bonding is maintained when an atom of a group V element is replaced with an atom of a group IV element, thereby producing a p-type dopant. However, changes of inter-icosahedral bonding occur upon replacing an atom of a group V element with an atom of a group VI element or with a vacancy. As a result, these substitutions do not produce effective n-type dopants. Moreover, partial substitution of boron atoms for atoms of group V elements generally renders these materials p-type semiconductors

  4. Periodic multilayer magnetized cold plasma containing a doped semiconductor

    Science.gov (United States)

    Nayak, Chittaranjan; Saha, Ardhendu; Aghajamali, Alireza

    2018-02-01

    The present work is to numerically investigate the properties of the defect mode in a one-dimensional photonic crystal made of magnetized cold plasma, doped by semiconductor. The defect mode of such kind of multilayer structure is analyzed by applying the character matrix method to each individual layer. Numerical results illustrate that the defect mode frequency can be tuned by varying the external magnetic field, the electron density, and the thickness of the defect layer. Moreover, the behavior of the defect mode was found to be quite interesting when study the oblique incidence. It was found that for both right- and left-hand polarized transversal magnetic waves, the defect mode of the proposed defective structure disappears when the angle of incidence is larger than a particular oblique incidence. For the left-hand polarized transversal electric wave, however, an additional defect mode was noticed. The results lead to some new information concerning the designing of new types of tunable narrowband microwave filters.

  5. A divalent rare earth oxide semiconductor: Yttrium monoxide

    Science.gov (United States)

    Kaminaga, Kenichi; Sei, Ryosuke; Hayashi, Kouichi; Happo, Naohisa; Tajiri, Hiroo; Oka, Daichi; Fukumura, Tomoteru; Hasegawa, Tetsuya

    Rare earth sesquioxides like Y2O3 are known as widegap insulators with the highly stable closed shell trivalent rare earth ions. On the other hand, rare earth monoxides such as YO have been recognized as gaseous phase, and only EuO and YbO were thermodynamically stable solid-phase rock salt monoxides. In this study, solid-phase rock salt yttrium monoxide, YO, was synthesized in a form of epitaxial thin film by pulsed laser deposition method. YO possesses unusual valence of Y2+ ([Kr] 4d1) . In contrast with Y2O3, YO was narrow gap semiconductor with dark-brown color. The electrical conductivity was tunable from 10-1 to 103 Ω-1 cm-1 by introducing oxygen vacancies as electron donor. Weak antilocalization behavior was observed indicating significant spin-orbit coupling owing to 4 d electron carrier. The absorption spectral shape implies the Mott-Hubbard insulator character of YO. Rare earth monoixdes will be new platform of functional oxides. This work was supported by JST-CREST, the Japan Society for the Promotion of Science (JSPS) with Grant-in-Aid for Scientific Research on Innovative Areas (Nos. 26105002 and 26105006), and Nanotechnology Platform (Project No.12024046) of MEXT, Japan.

  6. Review on dielectric properties of rare earth doped barium titanate

    International Nuclear Information System (INIS)

    Ismail, Fatin Adila; Osman, Rozana Aina Maulat; Idris, Mohd Sobri

    2016-01-01

    Rare earth doped Barium Titanate (BaTiO_3) were studied due to high permittivity, excellent electrical properties and have wide usage in various applications. This paper reviewed on the electrical properties of RE doped BaTiO_3 (RE: Lanthanum (La), Erbium (Er), Samarium (Sm), Neodymium (Nd), Cerium (Ce)), processing method, phase transition occurred and solid solution range for complete study. Most of the RE doped BaTiO_3 downshifted the Curie temperature (T_C). Transition temperature also known as Curie temperature, T_C where the ceramics had a transition from ferroelectric to a paraelectric phase. In this review, the dielectric constant of La-doped BaTiO_3, Er-doped BaTiO_3, Sm-doped BaTiO_3, Nd-doped BaTiO_3 and Ce-doped BaTiO_3 had been proved to increase and the transition temperature or also known as T_C also lowered down to room temperature as for all the RE doped BaTiO_3 except for Er-doped BaTiO_3.

  7. Enhanced Photocatalytic Activity of Rare Earth Metal (Nd and Gd doped ZnO Nanostructures

    Directory of Open Access Journals (Sweden)

    P. Logamani

    2017-06-01

    Full Text Available Presence of harmful organic pollutants in wastewater effluents causes serious environmental problems and therefore purification of this contaminated water by a cost effective treatment method is one of the most important issue which is in urgent need of scientific research. One such promising treatment technique uses semiconductor photocatalyst for the reduction of recalcitrant pollutants in water. In the present work, rare earth metals (Nd and Gd doped ZnO nanostructured photocatalyst have been synthesized by wet chemical method. The prepared samples were characterized by X-ray diffraction (XRD, Field Emission Scanning Electron Microscopy (FESEM and energy dispersive X-ray spectroscopy (EDS. The XRD results showed that the prepared samples were well crystalline with hexagonal Wurtzite structure. The results of EDS revealed that rare earth elements were doped into ZnO structure. The effect of rare earth dopant on morphology and photocatalytic degradation properties of the prepared samples were studied and discussed. The results revealed that the rare earth metal doped ZnO samples showed enhanced visible light photocatalytic activity for the degradation of methylene blue dye than pure nano ZnO photocatalyst.

  8. Lasing and ion beam doping of semiconductor nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Geburt, Sebastian

    2013-01-31

    Semiconductor nanowires exhibit extraordinary optical properties like highly localized light emission, efficient waveguiding and light amplification. Even the stimulation of laser oscillations can be achieved at optical pumping, making nanowires promising for optoelectronic applications. For successful integration into future devices, three major key challenges have to be faced: (1) the understanding of the fundamental properties, (2) the modification of the emission characteristics and (3) the investigation of the efficiency-limiting factors. All key challenges are addressed in this thesis: (1) The fundamental properties of CdS nanowire have been investigated to uncover the size limits for photonic nanowire lasers. Laser oscillations were observed at room temperature and the emission characteristics were correlated to the morphology, which allowed the determination of a minimum diameter and length necessary for lasing. (2) The emission characteristics of ZnO nanowires have been successfully modified by ion beam doping with Co. The structural investigations revealed a good recovery of the ion induced damage in the crystal lattice. Optical activation of the implanted Co ions was achieved and an intense intra-3d-emission confirmed successful modification. (3) The temporal decay of excited luminescence centers strongly depends on the interplay of luminescent ions and defects, thus offering an approach to investigate the efficiency-limiting processes. Mn implanted ZnS nanowires were investigated, as the temporal decay of the incorporated Mn ions can be described by a Foerster energy transfer model modified for nanostructures. The defect concentration was varied systematically by several approaches and the model could successfully fit the transients in all cases. The emission properties of Tb implanted ZnS nanowires were investigated and the temporal decay of the intra-4f-emission could also be fitted by the model, proving its accuracy for an additional element.

  9. Lasing and ion beam doping of semiconductor nanowires

    International Nuclear Information System (INIS)

    Geburt, Sebastian

    2013-01-01

    Semiconductor nanowires exhibit extraordinary optical properties like highly localized light emission, efficient waveguiding and light amplification. Even the stimulation of laser oscillations can be achieved at optical pumping, making nanowires promising for optoelectronic applications. For successful integration into future devices, three major key challenges have to be faced: (1) the understanding of the fundamental properties, (2) the modification of the emission characteristics and (3) the investigation of the efficiency-limiting factors. All key challenges are addressed in this thesis: (1) The fundamental properties of CdS nanowire have been investigated to uncover the size limits for photonic nanowire lasers. Laser oscillations were observed at room temperature and the emission characteristics were correlated to the morphology, which allowed the determination of a minimum diameter and length necessary for lasing. (2) The emission characteristics of ZnO nanowires have been successfully modified by ion beam doping with Co. The structural investigations revealed a good recovery of the ion induced damage in the crystal lattice. Optical activation of the implanted Co ions was achieved and an intense intra-3d-emission confirmed successful modification. (3) The temporal decay of excited luminescence centers strongly depends on the interplay of luminescent ions and defects, thus offering an approach to investigate the efficiency-limiting processes. Mn implanted ZnS nanowires were investigated, as the temporal decay of the incorporated Mn ions can be described by a Foerster energy transfer model modified for nanostructures. The defect concentration was varied systematically by several approaches and the model could successfully fit the transients in all cases. The emission properties of Tb implanted ZnS nanowires were investigated and the temporal decay of the intra-4f-emission could also be fitted by the model, proving its accuracy for an additional element.

  10. Extracting physical properties of arbitrarily shaped laser-doped micro-scale areas in semiconductors

    International Nuclear Information System (INIS)

    Heinrich, Martin; Kluska, Sven; Hameiri, Ziv; Hoex, Bram; Aberle, Armin G.

    2013-01-01

    We present a method that allows the extraction of relevant physical properties such as sheet resistance and dopant profile from arbitrarily shaped laser-doped micro-scale areas formed in semiconductors with a focused pulsed laser beam. The key feature of the method is to use large laser-doped areas with an identical average number of laser pulses per area (laser pulse density) as the arbitrarily shaped areas. The method is verified using sheet resistance measurements on laser-doped silicon samples. Furthermore, the method is extended to doping with continuous-wave lasers by using the average number of passes per area or density of passes

  11. Effect of silica surface coating on the luminescence lifetime and upconversion temperature sensing properties of semiconductor zinc oxide doped with gallium(III) and sensitized with rare earth ions Yb(III) and Tm(III).

    Science.gov (United States)

    Li, Yuemei; Li, Yongmei; Wang, Rui; Zheng, Wei

    2018-02-26

    Optical sensing of temperature by measurement of the ratio of the intensities of the 700 nm emission and the 800 nm emission of Ga(III)-doped ZnO (GZO) nanoparticles (NPs) and of GZO NPs coated with a silica shell are demonstrated at 980 nm excitation. It is found that the relative sensitivity of SiO 2 @Yb/Tm/GZO is 6.2% K -1 at a temperature of 693 K. This is ~3.4 times higher than that of Yb/Tm/GZO NPs. Obviously, the SiO 2 shell structure decreases the rate of the nonradiative decay. The decay time of the 800 nm emission of the Yb/Tm/GZO NPs (15 mol% Ga; 7 mol% Yb; 0.5 mol% Tm) displays a biexponential decay with a dominant decay time of 148 μs and a second decay time of ~412 μs. The lifetime of the Yb/Tm/GZO NPs at 293 K, and of the SiO 2 @Yb/Tm/GZO NPs are ~412 μs. Both the Yb/Tm/GZO and SiO 2 @Yb/Tm/GZO can be used up to 693 K. These results indicate that the SiO 2 shell on the Yb/Tm/GZO is beneficial in terms of sensitivity and resolution. Graphical abstract The enhancement the decay time and thermal sensitivity in the SiO 2 @Yb/Tm/GZO shell@core structure have been studied compared to the Ga(III)-doped Yb/Tm-doped ZnO (Yb/Tm/GZO). The SiO 2 @Yb/Tm/GZO have good thermal accuracy up to 693 °C.

  12. Photo darkening of rare earth doped silica

    DEFF Research Database (Denmark)

    Mattsson, Kent Erik

    2011-01-01

    /2/11/2 chemical bond is formed on dioxasilirane which comprises the PD color center for the visible and near-infrared. Difference in solid acidity of the silica material co-doped with Yb/Al and Yb/P may explain the observed difference in spectral shapes by change of bond order to the formed chemical bond. © 2011...

  13. Technique for magnetic susceptibility determination in the highly doped semiconductors by electron spin resonance

    Energy Technology Data Exchange (ETDEWEB)

    Veinger, A. I.; Zabrodskii, A. G.; Tisnek, T. V.; Goloshchapov, S. I.; Semenikhin, P. V. [Ioffe Institute of the Russian Academy of Sciences, St. Petersburg (Russian Federation)

    2014-08-20

    A method for determining the magnetic susceptibility in the highly doped semiconductors is considered. It is suitable for the semiconductors near the metal - insulator transition when the conductivity changes very quickly with the temperature and the resonance line form distorts. A procedure that is based on double integration of the positive part of the derivative of the absorption line having a Dyson shape and takes into account the depth of the skin layer is described. Analysis is made for the example of arsenic-doped germanium samples at a rather high concentration corresponding to the insulator-metal phase transition.

  14. The semiconductor doping with radiation defects via proton and alpha-particle irradiation. Review

    CERN Document Server

    Kozlov, V A

    2001-01-01

    Paper presents an analytical review devoted to semiconductor doping with radiation defects resulted from irradiation by light ions, in particular, by protons and alpha-particles. One studies formation of radiation defects in silicon, gallium arsenide and indium phosphide under light ion irradiation. One analyzes effect of proton and alpha-particle irradiation on electric conductivity of the above-listed semiconducting materials. Semiconductor doping with radiation defects under light ion irradiation enables to control their electrophysical properties and to design high-speed opto-, micro- and nanoelectronic devices on their basis

  15. Magnetic and electrical transport properties of delta-doped amorphous Ge:Mn magnetic semiconductors

    International Nuclear Information System (INIS)

    Li, H.L.; Lin, H.T.; Wu, Y.H.; Liu, T.; Zhao, Z.L.; Han, G.C.; Chong, T.C.

    2006-01-01

    We report on the growth and characterization of delta-doped amorphous Ge:Mn diluted magnetic semiconductor thin films on GaAs (0 0 1) substrates. The fabricated samples exhibit different magnetic behaviors, depending on the Mn doping concentration. The Curie temperature was found to be dependent on both the Mn doping concentration and spacing between the doping layers. A sharp drop in magnetization and rise in resistivity are observed at low temperature in samples with high Mn doping concentrations, which is also accompanied by a negative thermal remanent magnetization (TRM) in the higher temperature range. The temperature at which the magnetization starts to drop and the negative TRM appears show a correlation with the Mn doping concentration. The experimental results are discussed based on the formation of ferromagnetic regions at high temperature and antiferromagnetic coupling between these regions at low temperature

  16. Prediction of two-dimensional diluted magnetic semiconductors: Doped monolayer MoS2 systems

    KAUST Repository

    Cheng, Yingchun

    2013-03-05

    Using first-principles calculations, we propose a two-dimensional diluted magnetic semiconductor: monolayer MoS2 doped by transition metals. Doping of transition metal atoms from the IIIB to VIB groups results in nonmagnetic states, since the number of valence electrons is smaller or equal to that of Mo. Doping of atoms from the VIIB to IIB groups becomes energetically less and less favorable. Magnetism is observed for Mn, Fe, Co, Zn, Cd, and Hg doping, while for the other dopants from these groups it is suppressed by Jahn-Teller distortions. Analysis of the binding energies and magnetic properties indicates that (Mo,X)S2 (X=Mn, Fe, Co, and Zn) are promising systems to explore two-dimensional diluted magnetic semiconductors.

  17. Molecular Electrical Doping of Organic Semiconductors: Fundamental Mechanisms and Emerging Dopant Design Rules.

    Science.gov (United States)

    Salzmann, Ingo; Heimel, Georg; Oehzelt, Martin; Winkler, Stefanie; Koch, Norbert

    2016-03-15

    Today's information society depends on our ability to controllably dope inorganic semiconductors, such as silicon, thereby tuning their electrical properties to application-specific demands. For optoelectronic devices, organic semiconductors, that is, conjugated polymers and molecules, have emerged as superior alternative owing to the ease of tuning their optical gap through chemical variability and their potential for low-cost, large-area processing on flexible substrates. There, the potential of molecular electrical doping for improving the performance of, for example, organic light-emitting devices or organic solar cells has only recently been established. The doping efficiency, however, remains conspicuously low, highlighting the fact that the underlying mechanisms of molecular doping in organic semiconductors are only little understood compared with their inorganic counterparts. Here, we review the broad range of phenomena observed upon molecularly doping organic semiconductors and identify two distinctly different scenarios: the pairwise formation of both organic semiconductor and dopant ions on one hand and the emergence of ground state charge transfer complexes between organic semiconductor and dopant through supramolecular hybridization of their respective frontier molecular orbitals on the other hand. Evidence for the occurrence of these two scenarios is subsequently discussed on the basis of the characteristic and strikingly different signatures of the individual species involved in the respective doping processes in a variety of spectroscopic techniques. The critical importance of a statistical view of doping, rather than a bimolecular picture, is then highlighted by employing numerical simulations, which reveal one of the main differences between inorganic and organic semiconductors to be their respective density of electronic states and the doping induced changes thereof. Engineering the density of states of doped organic semiconductors, the Fermi

  18. Electron Tunneling in Junctions Doped with Semiconductors and Metals.

    Science.gov (United States)

    Bell, Lloyd Douglas, II

    In this study, tunnel junctions incorporating thin layers of semiconductors and metals have been analyzed. Inelastic electron tunneling spectroscopy (IETS) was employed to yield high-resolution vibrational spectra of surface species deposited at the oxide-M_2 interface of M_1-M_1O _{rm x}-M _2 tunneling samples. Analysis was also performed on the elastic component of the tunneling current, yielding information on the tunnel barrier shape. The samples in this research exhibit a wide range of behavior. The IETS for Si, SiO_2, and Ge doped samples show direct evidence of SiH _{rm x} and GeH_ {rm x} formation. The particular species formed is shown to depend on the form of the evaporated dopant. Samples were also made with organic dopants deposited over the evaporated dopants. Many such samples show marked effects of the evaporated dopants on the inelastic peak intensities of the organic dopants. These alterations are correlated with the changed reactivity of the oxide surface coupled with a change in the OH dipole layer density on the oxide. Thicker organic dopant layers cause large changes in the elastic tunneling barrier due to OH layer alterations or the low barrier attributes of the evaporated dopant. In the cases of the thicker layers an extra current-carrying mechanism is shown to be contributing. Electron ejection from charge traps is proposed as an explanation for this extra current. The trend of barrier shape with dopant thickness is examined. Many of these dopants also produce a voltage-induced shift in the barrier shape which is stable at low temperature but relaxes at high temperature. This effect is similar to that produced by certain organic dopants and is explained by metastable bond formation between the surface OH and dopant. Other dopants, such as Al, Mg, and Fe, produce different effects. These dopants cause large I-V nonlinearity at low voltages. This nonlinearity is modeled as a giant zero-bias anomaly (ZBA) and fits are presented which show good

  19. Insight into doping efficiency of organic semiconductors from the analysis of the density of states in n-doped C60 and ZnPc

    Science.gov (United States)

    Gaul, Christopher; Hutsch, Sebastian; Schwarze, Martin; Schellhammer, Karl Sebastian; Bussolotti, Fabio; Kera, Satoshi; Cuniberti, Gianaurelio; Leo, Karl; Ortmann, Frank

    2018-05-01

    Doping plays a crucial role in semiconductor physics, with n-doping being controlled by the ionization energy of the impurity relative to the conduction band edge. In organic semiconductors, efficient doping is dominated by various effects that are currently not well understood. Here, we simulate and experimentally measure, with direct and inverse photoemission spectroscopy, the density of states and the Fermi level position of the prototypical materials C60 and zinc phthalocyanine n-doped with highly efficient benzimidazoline radicals (2-Cyc-DMBI). We study the role of doping-induced gap states, and, in particular, of the difference Δ1 between the electron affinity of the undoped material and the ionization potential of its doped counterpart. We show that this parameter is critical for the generation of free carriers and influences the conductivity of the doped films. Tuning of Δ1 may provide alternative strategies to optimize the electronic properties of organic semiconductors.

  20. Nonthermal Photocoercivity Effect in Low-Doped (Ga,Mn)As Ferromagnetic Semiconductor

    Science.gov (United States)

    Kiessling, T.; Astakhov, G. V.; Hoffmann, H.; Korenev, V. L.; Schwittek, J.; Schott, G. M.; Gould, C.; Ossau, W.; Brunner, K.; Molenkamp, L. W.

    2011-12-01

    We report a photoinduced change of the coercive field of a low doped Ga1-xMnxAs ferromagnetic semiconductor under very low intensity illumination. This photocoercivity effect (PCE) is local and reversible, which enables the controlled formation of localized magnetization domains. The PCE arises from a light induced lowering of the domain wall pinning energy as confirmed by test experiments on high doped, fully metallic ferromagnetic Ga1-xMnxAs.

  1. Superconductor-semiconductor-superconductor planar junctions of aluminium on DELTA-doped gallium arsenide

    DEFF Research Database (Denmark)

    Taboryski, Rafael Jozef; Clausen, Thomas; Kutchinsky, jonatan

    1997-01-01

    We have fabricated and characterized planar superconductor-semiconductor-superconductor (S-Sm-S) junctions with a high quality (i.e. low barrier) interface between an n++ modulation doped conduction layer in MBE grown GaAs and in situ deposited Al electrodes. The Schottky barrier at the S...

  2. Boron-doped MnTe semiconductor-sensitized ZnO solar cells

    Indian Academy of Sciences (India)

    Administrator

    The B-doped MnTe semiconductor was grown on ZnO using two stages of the ... nanoparticles (NPs), i.e. MnTe and MnTe2 were observed with a diameter range of approximately ..... Kongkanand A, Tvrdy K, Takechi K, Kuno M and Kamat P.

  3. Doping kinetics of organic semiconductors investigated by field-effect transistors

    NARCIS (Netherlands)

    Maddalena, F.; Meijer, E.J.; Asadi, K.; Leeuw, D.M. de; Blom, P.W.M.

    2010-01-01

    The kinetics of acid doping of the semiconductor regioregular poly-3-hexylthiophene with vaporized chlorosilane have been investigated using field-effect transistors. The dopant density has been derived as a function of temperature and exposure time from the shift in the pinch-off voltage, being the

  4. Recent advances in rare earth doped alkali-alkaline earth borates for solid state lighting applications

    Science.gov (United States)

    Verma, Shefali; Verma, Kartikey; Kumar, Deepak; Chaudhary, Babulal; Som, Sudipta; Sharma, Vishal; Kumar, Vijay; Swart, Hendrik C.

    2018-04-01

    As a novel class of inorganic phosphor, the alkali-alkaline earth borate phosphors have gained huge attention due to their charming applications in solid-state lighting (SSL) and display devices. The current research drive shows that phosphors based on the alkali-alkaline earth borates have transformed the science and technology due to their high transparency over a broad spectral range, their flexibility in structure and durability for mechanical and high-laser applications. Recent advances in various aspects of rare-earth (RE) doped borate based phosphors and their utilizations in SSL and light emitting diodes are summarized in this review article. Moreover, the present status and upcoming scenario of RE-doped borate phosphors were reviewed in general along with the proper credential from the existing literature. It is believed that this review is a sole compilation of crucial information about the RE-doped borate phosphors in a single platform.

  5. Structure and Magnetic Properties of Rare Earth Doped Transparent Alumina

    Science.gov (United States)

    Limmer, Krista; Neupane, Mahesh; Chantawansri, Tanya

    Recent experimental studies of rare earth (RE) doped alumina suggest that the RE induced novel phase-dependent structural and magnetic properties. Motivated by these efforts, the effects of RE doping of alpha and theta alumina on the local structure, magnetic properties, and phase stability have been examined in this first principles study. Although a direct correlation between the magnetic field dependent materials properties observed experimentally and calculated from first principles is not feasible because of the applied field and the scale, the internal magnetic properties and other properties of the doped materials are evaluated. The RE dopants are shown to increase the substitutional site volume as well as increasingly distort the site structure as a function of ionic radii. Doping both the alpha (stable) and theta (metastable) phases enhanced the relative stability of the theta phase. The energetic doping cost and internal magnetic moment were shown to be a function of the electronic configuration of the RE-dopant, with magnetic moment directly proportional to the number of unpaired electrons and doping cost being inversely related.

  6. Charge Saturation and Intrinsic Doping in Electrolyte-Gated Organic Semiconductors.

    Science.gov (United States)

    Atallah, Timothy L; Gustafsson, Martin V; Schmidt, Elliot; Frisbie, C Daniel; Zhu, X-Y

    2015-12-03

    Electrolyte gating enables low voltage operation of organic thin film transistors, but little is known about the nature of the electrolyte/organic interface. Here we apply charge-modulation Fourier transform infrared spectroscopy, in conjunction with electrical measurements, on a model electrolyte gated organic semiconductor interface: single crystal rubrene/ion-gel. We provide spectroscopic signature for free-hole like carriers in the organic semiconductor and unambiguously show the presence of a high density of intrinsic doping of the free holes upon formation of the rubrene/ion-gel interface, without gate bias (Vg = 0 V). We explain this intrinsic doping as resulting from a thermodynamic driving force for the stabilization of free holes in the organic semiconductor by anions in the ion-gel. Spectroscopy also reveals the saturation of free-hole like carrier density at the rubrene/ion-gel interface at Vg < -0.5 V, which is commensurate with the negative transconductance seen in transistor measurements.

  7. A Solution-Doped Polymer Semiconductor:Insulator Blend for Thermoelectrics

    KAUST Repository

    Kiefer, David; Yu, Liyang; Fransson, Erik; Gó mez, André s; Primetzhofer, Daniel; Amassian, Aram; Campoy-Quiles, Mariano; Mü ller, Christian

    2016-01-01

    Poly(ethylene oxide) is demonstrated to be a suitable matrix polymer for the solution-doped conjugated polymer poly(3-hexylthiophene). The polarity of the insulator combined with carefully chosen processing conditions permits the fabrication of tens of micrometer-thick films that feature a fine distribution of the F4TCNQ dopant:semiconductor complex. Changes in electrical conductivity from 0.1 to 0.3 S cm−1 and Seebeck coefficient from 100 to 60 μV K−1 upon addition of the insulator correlate with an increase in doping efficiency from 20% to 40% for heavily doped ternary blends. An invariant bulk thermal conductivity of about 0.3 W m−1 K−1 gives rise to a thermoelectric Figure of merit ZT ∼ 10−4 that remains unaltered for an insulator content of more than 60 wt%. Free-standing, mechanically robust tapes illustrate the versatility of the developed dopant:semiconductor:insulator ternary blends.

  8. A Solution-Doped Polymer Semiconductor:Insulator Blend for Thermoelectrics

    KAUST Repository

    Kiefer, David

    2016-09-01

    Poly(ethylene oxide) is demonstrated to be a suitable matrix polymer for the solution-doped conjugated polymer poly(3-hexylthiophene). The polarity of the insulator combined with carefully chosen processing conditions permits the fabrication of tens of micrometer-thick films that feature a fine distribution of the F4TCNQ dopant:semiconductor complex. Changes in electrical conductivity from 0.1 to 0.3 S cm−1 and Seebeck coefficient from 100 to 60 μV K−1 upon addition of the insulator correlate with an increase in doping efficiency from 20% to 40% for heavily doped ternary blends. An invariant bulk thermal conductivity of about 0.3 W m−1 K−1 gives rise to a thermoelectric Figure of merit ZT ∼ 10−4 that remains unaltered for an insulator content of more than 60 wt%. Free-standing, mechanically robust tapes illustrate the versatility of the developed dopant:semiconductor:insulator ternary blends.

  9. Interfacial nondegenerate doping of MoS2 and other two-dimensional semiconductors.

    Science.gov (United States)

    Behura, Sanjay; Berry, Vikas

    2015-03-24

    Controlled nondegenerate doping of two-dimensional semiconductors (2DSs) with their ultraconfined carriers, high quantum capacitance, and surface-sensitive electronics can enable tuning their Fermi levels for rational device design. However, doping techniques for three-dimensional semiconductors, such as ion implantation, cannot be directly applied to 2DSs because they inflict high defect density. In this issue of ACS Nano, Park et al. demonstrate that interfacing 2DSs with substrates having dopants can controllably inject carriers to achieve nondegenerate doping, thus significantly broadening 2DSs' functionality and applications. Futuristically, this can enable complex spatial patterning/contouring of energy levels in 2DSs to form p-n junctions, integrated logic, and opto/electronic devices. The process is also extendable to biocellular-interfaced devices, band-continuum structures, and intricate 2D circuitry.

  10. III-V group compound semiconductor light-emitting element having a doped tantalum barrier layer

    International Nuclear Information System (INIS)

    Oanna, Y.; Ozawa, N.; Yamashita, M.; Yasuda, N.

    1984-01-01

    Disclosed is a III-V Group compound semiconductor light-emitting element having a III-V Group compound semiconductor body with a p-n junction and including a p-type layer involved in forming the p-n junction; and a multi-layer electrode mounted on the p-type layer of the semiconductor body. The electrode comprises a first layer of gold alloy containing a small amount of beryllium or zinc and formed in direct contact with the p-type layer of the semiconductor body and an uppermost layer formed of gold or aluminum. A tantalum layer doped with carbon, nitrogen and/or oxygen is formed between the first layer and the uppermost layer by means of vacuum vapor deposition

  11. Sensing Using Rare-Earth-Doped Upconversion Nanoparticles

    OpenAIRE

    Hao, Shuwei; Chen, Guanying; Yang, Chunhui

    2013-01-01

    Optical sensing plays an important role in theranostics due to its capability to detect hint biochemical entities or molecular targets as well as to precisely monitor specific fundamental psychological processes. Rare-earth (RE) doped upconversion nanoparticles (UCNPs) are promising for these endeavors due to their unique frequency converting capability; they emit efficient and sharp visible or ultraviolet (UV) luminescence via use of ladder-like energy levels of RE ions when excited at near ...

  12. Thermodynamic analysis of Mg-doped p-type GaN semiconductor

    International Nuclear Information System (INIS)

    Li Jingbo; Liang Jingkui; Rao Guanghui; Zhang Yi; Liu Guangyao; Chen Jingran; Liu Quanlin; Zhang Weijing

    2006-01-01

    A thermodynamic modeling of Mg-doped p-type GaN was carried out to describe the thermodynamic behaviors of native defects, dopants (Mg and H) and carriers in GaN. The formation energies of charged component compounds in a four-sublattice model were defined as functions of the Fermi-level based on the results of the first-principles calculations and adjusted to fit experimental data. The effect of the solubility of Mg on the low doping efficiency of Mg in GaN and the role of H in the Mg-doping MOCVD process were discussed. The modeling provides a thermodynamic approach to understand the doping process of GaN semiconductors

  13. Magnetoresistance and Curie temperature of GaAs semiconductor doped with Mn ions

    International Nuclear Information System (INIS)

    Yalishev, V.Sh.

    2006-02-01

    Key words: diluted magnetic semiconductors, magnetoresistance, ferromagnetism, ionic implantation, molecular-beam epitaxy, magnetic clusters, Curie temperature. Subjects of the inquiry: Diluted magnetic semiconductor GaAs:Mn. Aim of the inquiry: determination of the possibility of the increase of Curie temperature in diluted magnetic semiconductors based on GaAs doped with Mn magnetic impurity. Method of inquiry: superconducting quantum interference device (SQUID), Hall effect, magnetoresistance, atomic and magnetic force microscopes. The results achieved and their novelty: 1. The effect of the additional doping of Ga 0,965 Mn 0,035 As magnetic epitaxial layers by nonmagnetic impurity of Be on on the Curie temperature was revealed. 2. The exchange interaction energy in the investigated Ga 0,965 Mn 0,035 As materials was determined by the means of the magnetic impurity dispersion model from the temperature dependence of the resistivity measurements. 3. The effect of magnetic clusters dimensions and illumination on the magnetoresistance of GaAs materials containing nano-dimensional magnetic clusters was studied for the first time. Practical value: Calculated energy of the exchange interaction between local electrons of magnetic ions and free holes in Ga 1-x Mn x As magnetic semiconductors permitted to evaluate the theoretical meaning of Curie temperature depending on concentration of free holes and to compare it with experimental data. Sphere of usage: micro- and nano-electronics, solid state physics, physics of semiconductors, magnetic materials physics, spin-polarized current sources. (author)

  14. High-temperature ferromagnetism in heavily Fe-doped ferromagnetic semiconductor (Ga,Fe)Sb

    International Nuclear Information System (INIS)

    Tu, Nguyen Thanh; Hai, Pham Nam; Anh, Le Duc; Tanaka, Masaaki

    2016-01-01

    We show high-temperature ferromagnetism in heavily Fe-doped ferromagnetic semiconductor (Ga_1_−_x,Fe_x)Sb (x = 23% and 25%) thin films grown by low-temperature molecular beam epitaxy. Magnetic circular dichroism spectroscopy and anomalous Hall effect measurements indicate intrinsic ferromagnetism of these samples. The Curie temperature reaches 300 K and 340 K for x = 23% and 25%, respectively, which are the highest values reported so far in intrinsic III-V ferromagnetic semiconductors.

  15. High-temperature ferromagnetism in heavily Fe-doped ferromagnetic semiconductor (Ga,Fe)Sb

    Energy Technology Data Exchange (ETDEWEB)

    Tu, Nguyen Thanh [Department of Electrical Engineering and Information Systems, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656 (Japan); Department of Physics, Ho Chi Minh City University of Pedagogy, 280, An Duong Vuong Street, District 5, Ho Chi Minh City 748242 (Viet Nam); Hai, Pham Nam [Department of Electrical Engineering and Information Systems, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656 (Japan); Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 Ookayama, Meguro, Tokyo 152-0033 (Japan); Center for Spintronics Research Network (CSRN), The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan); Anh, Le Duc [Department of Electrical Engineering and Information Systems, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656 (Japan); Tanaka, Masaaki [Department of Electrical Engineering and Information Systems, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656 (Japan); Center for Spintronics Research Network (CSRN), The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan)

    2016-05-09

    We show high-temperature ferromagnetism in heavily Fe-doped ferromagnetic semiconductor (Ga{sub 1−x},Fe{sub x})Sb (x = 23% and 25%) thin films grown by low-temperature molecular beam epitaxy. Magnetic circular dichroism spectroscopy and anomalous Hall effect measurements indicate intrinsic ferromagnetism of these samples. The Curie temperature reaches 300 K and 340 K for x = 23% and 25%, respectively, which are the highest values reported so far in intrinsic III-V ferromagnetic semiconductors.

  16. Ferromagnetic semiconductor-metal transition in heterostructures of electron doped europium monoxide

    International Nuclear Information System (INIS)

    Stollenwerk, Tobias

    2013-09-01

    In the present work, we develop and solve a self-consistent theory for the description of the simultaneous ferromagnetic semiconductor-metal transition in electron doped Europium monoxide. We investigate two different types of electron doping, Gadolinium impurities and Oxygen vacancies. Besides the conduction band occupation, we can identify low lying spin fluctuations on magnetic impurities as the driving force behind the doping induced enhancement of the Curie temperature. Moreover, we predict the signatures of these magnetic impurities in the spectra of scanning tunneling microscope experiments. By extending the theory to allow for inhomogeneities in one spatial direction, we are able to investigate thin films and heterostructures of Gadolinium doped Europium monoxide. Here, we are able to reproduce the experimentally observed decrease of the Curie temperature with the film thickness. This behavior is attributed to missing coupling partners of the localized 4f moments as well as to an electron depletion at the surface which leads to a reduction of the number of itinerant electrons. By investigating the influence of a metallic substrate onto the phase transition in Gadolinium doped Europium monoxide, we find that the Curie temperature can be increased up to 20%. However, as we show, the underlying mechanism of metal-interface induced charge carrier accumulation is inextricably connected to a suppression of the semiconductor-metal transition.

  17. Ferromagnetic semiconductor-metal transition in heterostructures of electron doped europium monoxide

    Energy Technology Data Exchange (ETDEWEB)

    Stollenwerk, Tobias

    2013-09-15

    In the present work, we develop and solve a self-consistent theory for the description of the simultaneous ferromagnetic semiconductor-metal transition in electron doped Europium monoxide. We investigate two different types of electron doping, Gadolinium impurities and Oxygen vacancies. Besides the conduction band occupation, we can identify low lying spin fluctuations on magnetic impurities as the driving force behind the doping induced enhancement of the Curie temperature. Moreover, we predict the signatures of these magnetic impurities in the spectra of scanning tunneling microscope experiments. By extending the theory to allow for inhomogeneities in one spatial direction, we are able to investigate thin films and heterostructures of Gadolinium doped Europium monoxide. Here, we are able to reproduce the experimentally observed decrease of the Curie temperature with the film thickness. This behavior is attributed to missing coupling partners of the localized 4f moments as well as to an electron depletion at the surface which leads to a reduction of the number of itinerant electrons. By investigating the influence of a metallic substrate onto the phase transition in Gadolinium doped Europium monoxide, we find that the Curie temperature can be increased up to 20%. However, as we show, the underlying mechanism of metal-interface induced charge carrier accumulation is inextricably connected to a suppression of the semiconductor-metal transition.

  18. Lead Monoxide: Two-Dimensional Ferromagnetic Semiconductor Induced by Hole-Doping

    KAUST Repository

    Wang, Yao

    2017-04-12

    We employ first-principles calculations to demonstrate ferromagnetic ground states for single- and multi-layer lead monoxide (PbO) under hole-doping, originating from a van Hove singularity at the valence band edge. Both the sample thickness and applied strain are found to have huge effects on the electronic and magnetic properties. Multi-layer PbO is an indirect band gap semiconductor, while a direct band gap is realized in the single-layer limit. In hole-doped single-layer PbO, biaxial tensile strain can enhance the stability of the ferromagnetic state.

  19. Lead Monoxide: Two-Dimensional Ferromagnetic Semiconductor Induced by Hole-Doping

    KAUST Repository

    Wang, Yao; Zhang, Qingyun; Shen, Qian; Cheng, Yingchun; Schwingenschlö gl, Udo; Huang, Wei

    2017-01-01

    We employ first-principles calculations to demonstrate ferromagnetic ground states for single- and multi-layer lead monoxide (PbO) under hole-doping, originating from a van Hove singularity at the valence band edge. Both the sample thickness and applied strain are found to have huge effects on the electronic and magnetic properties. Multi-layer PbO is an indirect band gap semiconductor, while a direct band gap is realized in the single-layer limit. In hole-doped single-layer PbO, biaxial tensile strain can enhance the stability of the ferromagnetic state.

  20. Efficient n-type doping of zinc-blende III-V semiconductor nanowires

    Science.gov (United States)

    Besteiro, Lucas V.; Tortajada, Luis; Souto, J.; Gallego, L. J.; Chelikowsky, James R.; Alemany, M. M. G.

    2014-03-01

    We demonstrate that it is preferable to dope III-V semiconductor nanowires by n-type anion substitution as opposed to cation substitution. Specifically, we show the dopability of zinc-blende nanowires is more efficient when the dopants are placed at the anion site as quantified by formation energies and the stabilization of DX-like defect centers. The comparison with previous work on n - type III-V semiconductor nanocrystals also allows to determine the role of dimensionality and quantum confinement on doping characteristics of materials. Our results are based on first-principles calculations of InP nanowires by using the PARSEC code. Work supported by the Spanish MICINN (FIS2012-33126) and Xunta de Galicia (GPC2013-043) in conjunction with FEDER. JRC acknowledges support from DoE (DE-FG02-06ER46286 and DESC0008877). Computational support was provided in part by CESGA.

  1. Temperature effects in contacts between a metal and a semiconductor nanowire near the degenerate doping

    Science.gov (United States)

    Sun, Zhuting; Burgess, Tim; Tan, H. H.; Jagadish, Chennupati; Kogan, Andrei

    2018-04-01

    We have investigated the nonlinear conductance in diffusion-doped Si:GaAs nanowires contacted by patterned metal films in a wide range of temperatures T. The wire resistance R W and the zero bias resistance R C, dominated by the contacts, exhibit very different responses to temperature changes. While R W shows almost no dependence on T, R C varies by several orders of magnitude as the devices are cooled from room temperature to T = 5 K. We develop a model that employs a sharp donor level very low in the GaAs conduction band and show that our observations are consistent with the model predictions. We then demonstrate that such measurements can be used to estimate carrier properties in nanostructured semiconductors and obtain an estimate for N D, the doping density in our samples. We also discuss the effects of surface states and dielectric confinement on carrier density in semiconductor nanowires.

  2. Preparation and Characterization of Rare Earth Doped Fluoride Nanoparticles

    Directory of Open Access Journals (Sweden)

    Timothy A. DeVol

    2010-03-01

    Full Text Available This paper reviews the synthesis, structure and applications of metal fluoride nanoparticles, with particular focus on rare earth (RE doped fluoride nanoparticles obtained by our research group. Nanoparticles were produced by precipitation methods using the ligand ammonium di-n-octadecyldithiophosphate (ADDP that allows the growth of shells around a core particle while simultaneously avoiding particle aggregation. Nanoparticles were characterized on their structure, morphology, and luminescent properties. We discuss the synthesis, properties, and application of heavy metal fluorides; specifically LaF3:RE and PbF2, and group IIA fluorides. Particular attention is given to the synthesis of core/shell nanoparticles, including selectively RE-doped LaF3/LaF3, and CaF2/CaF2 core/(multi-shell nanoparticles, and the CaF2-LaF3 system.

  3. Radioluminescence of rare-earth doped aluminum oxide

    Energy Technology Data Exchange (ETDEWEB)

    Santiago, M.; Molina, P. [Universidad Nacional del Centro de la Provincia de Buenos Aires, Instituto de Fisica Arroyo Seco, Pinto 399, 7000 Tandil (Argentina); Barros, V. S.; Khoury, H. J.; Elihimas, D. R., E-mail: msantiag@exa.unicen.edu.ar [Universidade Federal de Pernambuco, Departamento de Energia Nuclear, Av. Prof. Luiz Freire 1000, Recife, PE 50740-540 (Brazil)

    2011-10-15

    Carbon-doped aluminum oxide (Al{sub 2}O{sub 3}:C) is one of the most used radioluminescence (Rl) materials for fiberoptic dosimetry due to its high efficiency and commercial availability. However, this compound presents the drawback of emitting in the spectral region, where the spurious radioluminescence of fibers is also important. In this work, the radioluminescence response of rare-earth doped Al{sub 2}O{sub 3} samples has been evaluated. The samples were prepared by mixing stoichiometric amounts of aluminum nitrate, urea and dopants with different amounts of terbium, samarium, cerium and thulium nitrates varying from 0 to 0.15 mo 1%. The influence of the different activators on the Rl spectra has been investigated in order to determine the feasibility of using these compounds for Rl fiberoptic dosimetry. (Author)

  4. Radioluminescence of rare-earth doped aluminum oxide

    International Nuclear Information System (INIS)

    Santiago, M.; Molina, P.; Barros, V. S.; Khoury, H. J.; Elihimas, D. R.

    2011-10-01

    Carbon-doped aluminum oxide (Al 2 O 3 :C) is one of the most used radioluminescence (Rl) materials for fiberoptic dosimetry due to its high efficiency and commercial availability. However, this compound presents the drawback of emitting in the spectral region, where the spurious radioluminescence of fibers is also important. In this work, the radioluminescence response of rare-earth doped Al 2 O 3 samples has been evaluated. The samples were prepared by mixing stoichiometric amounts of aluminum nitrate, urea and dopants with different amounts of terbium, samarium, cerium and thulium nitrates varying from 0 to 0.15 mo 1%. The influence of the different activators on the Rl spectra has been investigated in order to determine the feasibility of using these compounds for Rl fiberoptic dosimetry. (Author)

  5. Metal non-metal transitions in doped semiconductors

    International Nuclear Information System (INIS)

    Brezini, A.

    1989-12-01

    A disordered Hubbard model with diagonal disorder is used to examine the electron localization effects associated with both disorder and electron-electron interaction. Extensive results are reported on the ground state properties and compared with other theories. In particular two regimes are observed; when the electron-electron interaction U is greater than the disorder parameter and when is smaller. Furthermore the effect of including conduction-band minima into the calculation of metal-insulator transitions in doped Si and Ge is investigated with use of Berggren approach. Good agreement with experiments are found when both disorder and interactions are included. (author). 37 refs, 7 figs, 3 tabs

  6. Electrostatic analysis of n-doped SrTiO3 metal-insulator-semiconductor systems

    International Nuclear Information System (INIS)

    Kamerbeek, A. M.; Banerjee, T.; Hueting, R. J. E.

    2015-01-01

    Electron doped SrTiO 3 , a complex-oxide semiconductor, possesses novel electronic properties due to its strong temperature and electric-field dependent permittivity. Due to the high permittivity, metal/n-SrTiO 3 systems show reasonably strong rectification even when SrTiO 3 is degenerately doped. Our experiments show that the insertion of a sub nanometer layer of AlO x in between the metal and n-SrTiO 3 interface leads to a dramatic reduction of the Schottky barrier height (from around 0.90 V to 0.25 V). This reduces the interface resistivity by 4 orders of magnitude. The derived electrostatic analysis of the metal-insulator-semiconductor (n-SrTiO 3 ) system is consistent with this trend. When compared with a Si based MIS system, the change is much larger and mainly governed by the high permittivity of SrTiO 3 . The non-linear permittivity of n-SrTiO 3 leads to unconventional properties such as a temperature dependent surface potential non-existent for semiconductors with linear permittivity such as Si. This allows tuning of the interfacial band alignment, and consequently the Schottky barrier height, in a much more drastic way than in conventional semiconductors

  7. Doping Polymer Semiconductors by Organic Salts: Toward High-Performance Solution-Processed Organic Field-Effect Transistors.

    Science.gov (United States)

    Hu, Yuanyuan; Rengert, Zachary D; McDowell, Caitlin; Ford, Michael J; Wang, Ming; Karki, Akchheta; Lill, Alexander T; Bazan, Guillermo C; Nguyen, Thuc-Quyen

    2018-04-24

    Solution-processed organic field-effect transistors (OFETs) were fabricated with the addition of an organic salt, trityl tetrakis(pentafluorophenyl)borate (TrTPFB), into thin films of donor-acceptor copolymer semiconductors. The performance of OFETs is significantly enhanced after the organic salt is incorporated. TrTPFB is confirmed to p-dope the organic semiconductors used in this study, and the doping efficiency as well as doping physics was investigated. In addition, systematic electrical and structural characterizations reveal how the doping enhances the performance of OFETs. Furthermore, it is shown that this organic salt doping method is feasible for both p- and n-doping by using different organic salts and, thus, can be utilized to achieve high-performance OFETs and organic complementary circuits.

  8. Blue photoluminescence in Ti-doped alkaline-earth stannates

    International Nuclear Information System (INIS)

    Yamashita, Takahiro; Ueda, Kazushige

    2007-01-01

    Blue photoluminescence properties of Ti-doped alkaline-earth stannates, A 2 (Sn 1- x Ti x )O 4 (A=Ca, Sr, Ba) (x=0.005-0.15), were examined at room temperature. These stannates showed intense broad emission bands peaking at 445 nm for Ca 2 SnO 4 , at 410 nm for Sr 2 SnO 4 , and at 425 nm for Ba 2 SnO 4 under UV excitation. Emission intensities were relatively insensitive to Ti concentration and no sharp concentration quenching was observed. Mixing alkaline-earth ions in the crystal structures did not increase the emission intensities in the A 2 (Sn 1- x Ti x )O 4 system. The excitation spectra of these stannates exhibited broad bands just below the fundamental absorption edges, implying that luminescence centers do not consist of the component elements in the host materials. It was suggested that the isolated TiO 6 complexes are possible luminescence centers in these materials, as previously proposed in other Ti-doped stannates such as Mg 2 SnO 4 and Y 2 Sn 2 O 7 . - Graphical abstract: Blue photoluminescence properties of Ti-doped alkaline-earth stannates, A 2 (Sn 1- x Ti x )O 4 (A=Ca, Sr, Ba) (x=0.005-0.15), were examined at room temperature. These stannates showed intense broad emission bands peaking at 445 nm for Ca 2 SnO 4 , at 410 nm for Sr 2 SnO 4 , and at 425 nm for Ba 2 SnO 4 under UV excitation

  9. Microstructural properties of over-doped GaN-based diluted magnetic semiconductors grown by MOCVD

    International Nuclear Information System (INIS)

    Tao Zhikuo; Zhang Rong; Xiu Xiangqian; Cui Xugao; Li Xin; Xie Zili; Zheng Youdou; Li Li; Zheng Rongkun; Ringer, Simon P

    2012-01-01

    We have grown transition metal (Fe, Mn) doped GaN thin films on c-oriented sapphire by metal-organic chemical vapor deposition. By varying the flow of the metal precursor, a series of samples with different ion concentrations are synthesized. Microstructural properties are characterized by using a high-resolution transmission electron microscope. For Fe over-doped GaN samples, hexagonal Fe 3 N clusters are observed with Fe 3 N(0002) parallel to GaN (0002) while for Mn over-doped GaN, hexagonal Mn 6 N 2.58 phases are observed with Mn 6 N 2.58 (0002) parallel to GaN(0002). In addition, with higher concentration ions doping into the lattice matrix, the partial lattice orientation is distorted, leading to the tilt of GaN(0002) planes. The magnetization of the Fe over-doped GaN sample is increased, which is ascribed to the participation of ferromagnetic iron and Fe 3 N. The Mn over-doped sample displays very weak ferromagnetic behavior, which probably originates from the Mn 6 N 2.58 . (semiconductor materials)

  10. Anion-induced N-doping of naphthalenediimide polymer semiconductor in organic thin-film transistors

    KAUST Repository

    Han, Yang

    2018-03-13

    Molecular doping is an important strategy to improve the charge transport properties of organic semiconductors in various electronic devices. Compared to p-type dopants, the development of n-type dopants is especially challenging due to poor dopant stability against atmospheric conditions. In this article, we report the n-doping of the milestone naphthalenediimide-based conjugated polymer P(NDI2OD-T2) in organic thin film transistor devices by soluble anion dopants. The addition of the dopants resulted in the formation of stable radical anions in thin films, as confirmed by EPR spectroscopy. By tuning the dopant concentration via simple solution mixing, the transistor parameters could be readily controlled. Hence the contact resistance between the electrodes and the semiconducting polymer could be significantly reduced, which resulted in the transistor behaviour approaching the desirable gate voltage-independent model. Reduced hysteresis was also observed, thanks to the trap filling by the dopant. Under optimal doping concentrations the channel on-current was increased several fold whilst the on/off ratio was simultaneously increased by around one order of magnitude. Hence doping with soluble organic salts appears to be a promising route to improve the charge transport properties of n-type organic semiconductors.

  11. Anion-induced N-doping of naphthalenediimide polymer semiconductor in organic thin-film transistors

    KAUST Repository

    Han, Yang; Fei, Zhuping; Lin, Yen-Hung; Martin, Jaime; Tuna, Floriana; Anthopoulos, Thomas D.; Heeney, Martin

    2018-01-01

    Molecular doping is an important strategy to improve the charge transport properties of organic semiconductors in various electronic devices. Compared to p-type dopants, the development of n-type dopants is especially challenging due to poor dopant stability against atmospheric conditions. In this article, we report the n-doping of the milestone naphthalenediimide-based conjugated polymer P(NDI2OD-T2) in organic thin film transistor devices by soluble anion dopants. The addition of the dopants resulted in the formation of stable radical anions in thin films, as confirmed by EPR spectroscopy. By tuning the dopant concentration via simple solution mixing, the transistor parameters could be readily controlled. Hence the contact resistance between the electrodes and the semiconducting polymer could be significantly reduced, which resulted in the transistor behaviour approaching the desirable gate voltage-independent model. Reduced hysteresis was also observed, thanks to the trap filling by the dopant. Under optimal doping concentrations the channel on-current was increased several fold whilst the on/off ratio was simultaneously increased by around one order of magnitude. Hence doping with soluble organic salts appears to be a promising route to improve the charge transport properties of n-type organic semiconductors.

  12. Near-thermal limit gating in heavily doped III-V semiconductor nanowires using polymer electrolytes

    Science.gov (United States)

    Ullah, A. R.; Carrad, D. J.; Krogstrup, P.; Nygârd, J.; Micolich, A. P.

    2018-02-01

    Doping is a common route to reducing nanowire transistor on-resistance but it has limits. A high doping level gives significant loss in gate performance and ultimately complete gate failure. We show that electrolyte gating remains effective even when the Be doping in our GaAs nanowires is so high that traditional metal-oxide gates fail. In this regime we obtain a combination of subthreshold swing and contact resistance that surpasses the best existing p -type nanowire metal-oxide semiconductor field-effect transistors (MOSFETs). Our subthreshold swing of 75 mV/dec is within 25 % of the room-temperature thermal limit and comparable with n -InP and n -GaAs nanowire MOSFETs. Our results open a new path to extending the performance and application of nanowire transistors, and motivate further work on improved solid electrolytes for nanoscale device applications.

  13. Semiconductor

    International Nuclear Information System (INIS)

    2000-01-01

    This book deals with process and measurement of semiconductor. It contains 20 chapters, which goes as follows; semiconductor industry, introduction of semiconductor manufacturing, yield of semiconductor process, materials, crystal growth and a wafer forming, PN, control pollution, oxidation, photomasking photoresist chemistry, photomasking technologies, diffusion and ion injection, chemical vapor deposition, metallization, wafer test and way of evaluation, semiconductor elements, integrated circuit and semiconductor circuit technology.

  14. Direct current electroluminescence in rare-earth-doped zinc sulphide

    International Nuclear Information System (INIS)

    Bryant, F.J.; Krier, A.

    1984-01-01

    Some of the properties and characteristics of rare-earth-doped zinc sulphide DCEL devices are reported. Two types of devices are discussed, co-evaporated ZnS:RE thin films and ion implanted ZnS:RE single crystal diodes. The thin film devices exhibit bright DCEL of various colours at low applied voltages (typically approximately 12 V). A study of the spectral intensities and lifetimes of the Er 3+ ion in ZnS:Er 3+ thin films is consistent with a Boltzmann energy distribution amongst the conduction electrons present in these devices. The ZnS:RE single crystal diodes fabricated in this laboratory by ion implantation are also capable of various colour DCEL. By comparing the EL emission obtained from the different rare earth dopants, erbium and neodymium are identified as the most efficient luminescence centres. Further consideration of the EL emission spectra gives evidence for the presence of inter-conduction band hot electron transitions in those devices containing rare earth dopants which are inefficent electroluminescence centres. These findings can be explained in terms of Auger processes occurring in rare earth complexes. (author)

  15. Guided mode cutoff in rare-earth doped rod-type PCFs

    DEFF Research Database (Denmark)

    Poli, F.; Cucinotta, A.; Passaro, D.

    2008-01-01

    Guided mode properties of rare-earth doped photonic crystal fibers are investigated as a function of the core refractive index, showing the possibility to obtain cutoff at low normalized wavelength.......Guided mode properties of rare-earth doped photonic crystal fibers are investigated as a function of the core refractive index, showing the possibility to obtain cutoff at low normalized wavelength....

  16. Synthesis of Semiconductor Nanocrystals, Focusing on Nontoxic and Earth-Abundant Materials

    NARCIS (Netherlands)

    Reiss, Peter; Carrière, Marie; Lincheneau, Christophe; Vaure, Louis; Tamang, Sudarsan

    2016-01-01

    We review the synthesis of semiconductor nanocrystals/colloidal quantum dots in organic solvents with special emphasis on earth-abundant and toxic heavy metal free compounds. Following the Introduction, section 2 defines the terms related to the toxicity of nanocrystals and gives a comprehensive

  17. Nonthermal Photocoercivity Effect in a Low-Doped (Ga,Mn)As Ferromagnetic Semiconductor

    Science.gov (United States)

    Astakhov, G. V.; Hoffmann, H.; Korenev, V. L.; Kiessling, T.; Schwittek, J.; Schott, G. M.; Gould, C.; Ossau, W.; Brunner, K.; Molenkamp, L. W.

    2009-05-01

    We report a photoinduced change of the coercive field, i.e., a photocoercivity effect (PCE), under very low intensity illumination of a low-doped (Ga,Mn)As ferromagnetic semiconductor. We find a strong correlation between the PCE and the sample resistivity. Spatially resolved dynamics of the magnetization reversal rule out any role of thermal heating in the origin of this PCE, and we propose a mechanism based on the light-induced lowering of the domain wall pinning energy. The PCE is local and reversible, allowing writing and erasing of magnetic images using light.

  18. Experimental investigations of optical nonlinearities in semiconductor-doped glass waveguides

    International Nuclear Information System (INIS)

    Dannberg, P.; Possner, T.; Braeuer, A.; Bartuch, U.

    1988-01-01

    Both, thermal and electronic optical nonlinearities are studied in semiconductor-doped glass (SDG) waveguides which are fabricated in commercially available sharp-cut filters by Cs + -K + ion exchange. The relaxation time in photodarkened substrates is measured to be 30 ps. By means of a prism coupling set-up the saturation value of the nonlinear index change is determined. Furthermore, a high stability dual-beam interferometer is presented for the measurement of both, thermal and electronic nonlinear refractive index n 2 in planar waveguides. Conclusions about the application of SDG to opto-optical switching are given. (author)

  19. Effect of impurity correlation on the density of states in slightly compensated heavily doped semiconductors

    International Nuclear Information System (INIS)

    Doan Nhat Quang; Nguyen Nhu Dat; Dinh Van An

    1993-07-01

    A theory is developed of the electron density of states (DOS) in slightly compensated heavily doped semiconductors which undergo a thermal treatment. The calculation is carried out within the semiclassical approach to the random impurity field, taking adequately into account high-temperature correlation among the impurities and low temperature screening due to the free carriers as well. Then, a simple analytic expression for the DOS is obtained which exhibits the same energy dependence as in the case of a random impurity distribution, but now with some correlation-induced changes in the coefficients. A numerical estimation on non-compensated n-type sample of GaAs at a doping level of 5 x 10 18 cm -3 shows that in the tail region the correlated DOS turns out to be somewhat larger and cut less sharply than the random one. (author). 45 refs, 2 figs, 1 tab

  20. Dynamic population gratings in rare-earth-doped optical fibres

    Energy Technology Data Exchange (ETDEWEB)

    Stepanov, Serguei [Optics Department, CICESE, km.107 carr. Tijuana-Ensenada, Ensenada, 22860, BC (Mexico)], E-mail: steps@cicese.mx

    2008-11-21

    Dynamic Bragg gratings can be recorded in rare-earth (e.g. Er, Yb) doped optical fibres by two counter-propagating mutually coherent laser waves via local saturation of the fibre optical absorption or gain (in optically pumped fibres). Typical recording cw light power needed for efficient grating formation is of sub-mW-mW scale which results in characteristic recording/erasure times of 10-0.1 ms. This review paper discusses fundamental aspects of the population grating formation, their basic properties, relating wave-mixing processes and also considers different applications of these dynamic gratings in single-frequency fibre lasers, tunable filters, optical fibre sensors and adaptive interferometry.

  1. Dynamic population gratings in rare-earth-doped optical fibres

    International Nuclear Information System (INIS)

    Stepanov, Serguei

    2008-01-01

    Dynamic Bragg gratings can be recorded in rare-earth (e.g. Er, Yb) doped optical fibres by two counter-propagating mutually coherent laser waves via local saturation of the fibre optical absorption or gain (in optically pumped fibres). Typical recording cw light power needed for efficient grating formation is of sub-mW-mW scale which results in characteristic recording/erasure times of 10-0.1 ms. This review paper discusses fundamental aspects of the population grating formation, their basic properties, relating wave-mixing processes and also considers different applications of these dynamic gratings in single-frequency fibre lasers, tunable filters, optical fibre sensors and adaptive interferometry.

  2. Madelung and Hubbard interactions in polaron band model of doped organic semiconductors

    Science.gov (United States)

    Png, Rui-Qi; Ang, Mervin C.Y.; Teo, Meng-How; Choo, Kim-Kian; Tang, Cindy Guanyu; Belaineh, Dagmawi; Chua, Lay-Lay; Ho, Peter K.H.

    2016-01-01

    The standard polaron band model of doped organic semiconductors predicts that density-of-states shift into the π–π* gap to give a partially filled polaron band that pins the Fermi level. This picture neglects both Madelung and Hubbard interactions. Here we show using ultrahigh workfunction hole-doped model triarylamine–fluorene copolymers that Hubbard interaction strongly splits the singly-occupied molecular orbital from its empty counterpart, while Madelung (Coulomb) interactions with counter-anions and other carriers markedly shift energies of the frontier orbitals. These interactions lower the singly-occupied molecular orbital band below the valence band edge and give rise to an empty low-lying counterpart band. The Fermi level, and hence workfunction, is determined by conjunction of the bottom edge of this empty band and the top edge of the valence band. Calculations are consistent with the observed Fermi-level downshift with counter-anion size and the observed dependence of workfunction on doping level in the strongly doped regime. PMID:27582355

  3. Synthesis and structure of alkaline earth and rare earth metal doped C70

    International Nuclear Information System (INIS)

    Takenobu, Taishi; Iwasa, Yoshihiro; Ito, Takayoshi; Mitani, Tadaoki

    2001-01-01

    We have investigated the structure sequence of alkaline earth (A=Ba, Sr) and rare earth metal (R=Eu) doped C 70 binary system. X-ray diffraction measurements revealed that there exist at least four stable phases at x=3, 4, 6, and 9 in A x C 70 and two stable phases at x=3, and 9 in R x C 70 . Among them, structural models are presented for Ba 4 C 70 , Sr 3 C 70 , and Eu 3 C 70 . Ba 4 C 70 takes an analogous structure to orthorhombic Ba 4 C 60 . Sr 3 C 70 and Eu 3 C 70 have monoclinic cell and their diffraction patterns are quite similar to that of Sm 3 C 70 , which involves a unique C 70 -metal-C 70 dimer structure. Preliminary results of Raman spectroscopy and magnetization measurement suggest the highly reduction state for A 9 C 70 and ferromagnetic interaction for Eu x C 70

  4. Unraveling the Origin of Magnetism in Mesoporous Cu-Doped SnO₂ Magnetic Semiconductors.

    Science.gov (United States)

    Fan, Junpeng; Menéndez, Enric; Guerrero, Miguel; Quintana, Alberto; Weschke, Eugen; Pellicer, Eva; Sort, Jordi

    2017-10-25

    The origin of magnetism in wide-gap semiconductors doped with non-ferromagnetic 3d transition metals still remains intriguing. In this article, insights in the magnetic properties of ordered mesoporous Cu-doped SnO₂ powders, prepared by hard-templating, have been unraveled. Whereas, both oxygen vacancies and Fe-based impurity phases could be a plausible explanation for the observed room temperature ferromagnetism, the low temperature magnetism is mainly and unambiguously arising from the nanoscale nature of the formed antiferromagnetic CuO, which results in a net magnetization that is reminiscent of ferromagnetic behavior. This is ascribed to uncompensated spins and shape-mediated spin canting effects. The reduced blocking temperature, which resides between 30 and 5 K, and traces of vertical shifts in the hysteresis loops confirm size effects in CuO. The mesoporous nature of the system with a large surface-to-volume ratio likely promotes the occurrence of uncompensated spins, spin canting, and spin frustration, offering new prospects in the use of magnetic semiconductors for energy-efficient spintronics.

  5. Robust Visible and Infrared Light Emitting Devices Using Rare-Earth-Doped GaN

    National Research Council Canada - National Science Library

    Steckl, Andrew

    2006-01-01

    Rare earth (RE) dopants (such as Er, Eu, Tm) in the wide bandgap semiconductor (WBGS) GaN are investigated for the fabrication of robust visible and infrared light emitting devices at a variety of wavelengths...

  6. Platinum nanoparticles on gallium nitride surfaces: effect of semiconductor doping on nanoparticle reactivity.

    Science.gov (United States)

    Schäfer, Susanne; Wyrzgol, Sonja A; Caterino, Roberta; Jentys, Andreas; Schoell, Sebastian J; Hävecker, Michael; Knop-Gericke, Axel; Lercher, Johannes A; Sharp, Ian D; Stutzmann, Martin

    2012-08-01

    Platinum nanoparticles supported on n- and p-type gallium nitride (GaN) are investigated as novel hybrid systems for the electronic control of catalytic activity via electronic interactions with the semiconductor support. In situ oxidation and reduction were studied with high pressure photoemission spectroscopy. The experiments revealed that the underlying wide-band-gap semiconductor has a large influence on the chemical composition and oxygen affinity of supported nanoparticles under X-ray irradiation. For as-deposited Pt cuboctahedra supported on n-type GaN, a higher fraction of oxidized surface atoms was observed compared to cuboctahedral particles supported on p-type GaN. Under an oxygen atmosphere, immediate oxidation was recorded for nanoparticles on n-type GaN, whereas little oxidation was observed for nanoparticles on p-type GaN. Together, these results indicate that changes in the Pt chemical state under X-ray irradiation depend on the type of GaN doping. The strong interaction between the nanoparticles and the support is consistent with charge transfer of X-ray photogenerated free carriers at the semiconductor-nanoparticle interface and suggests that GaN is a promising wide-band-gap support material for photocatalysis and electronic control of catalysis.

  7. Unusually large chemical potential shift in a degenerate semiconductor: Angle-resolved photoemission study of SnSe and Na-doped SnSe

    Science.gov (United States)

    Maeda, M.; Yamamoto, K.; Mizokawa, T.; Saini, N. L.; Arita, M.; Namatame, H.; Taniguchi, M.; Tan, G.; Zhao, L. D.; Kanatzidis, M. G.

    2018-03-01

    We have studied the electronic structure of SnSe and Na-doped SnSe by means of angle-resolved photoemission spectroscopy. The valence-band top reaches the Fermi level by the Na doping, indicating that Na-doped SnSe can be viewed as a degenerate semiconductor. However, in the Na-doped system, the chemical potential shift with temperature is unexpectedly large and is apparently inconsistent with the degenerate semiconductor picture. The large chemical potential shift and anomalous spectral shape are key ingredients for an understanding of the novel metallic state with the large thermoelectric performance in Na-doped SnSe.

  8. Rare Earth Doped Lanthanum Calcium Borate Polycrystalline Red Phosphors

    Directory of Open Access Journals (Sweden)

    H. H. Xiong

    2014-01-01

    Full Text Available Single-phased Sm3+ doped lanthanum calcium borate (SmxLa2−xCaB10O19, SLCB, x=0.06 polycrystalline red phosphor was prepared by solid-state reaction method. The phosphor has two main excitation peaks located at 398.5 nm and 469.0 nm, which are nicely in accordance with the emitting wavelengths of commercial near-UV and blue light emitting diode chips. Under the excitation of 398.0 nm, the dominant red emission of Sm3+ in SLCB phosphor is centered at 598.0 nm corresponding to the transition of 4G5/2 → 6H7/2. The Eu3+ fluorescence in the red spectral region is applied as a spectroscopic probe to reveal the local site symmetry in the host lattice and, hence, Judd-Ofelt parameters Ωt  (t=2, 4 of Eu3+ in the phosphor matrix are derived to be 3.62×10-20 and 1.97×10-20 cm2, indicating a high asymmetrical and strong covalent environment around rare earth luminescence centers. Herein, the red phosphors are promising good candidates employed in white light emitting diodes (LEDs illumination.

  9. Sensing using rare-earth-doped upconversion nanoparticles.

    Science.gov (United States)

    Hao, Shuwei; Chen, Guanying; Yang, Chunhui

    2013-01-01

    Optical sensing plays an important role in theranostics due to its capability to detect hint biochemical entities or molecular targets as well as to precisely monitor specific fundamental psychological processes. Rare-earth (RE) doped upconversion nanoparticles (UCNPs) are promising for these endeavors due to their unique frequency converting capability; they emit efficient and sharp visible or ultraviolet (UV) luminescence via use of ladder-like energy levels of RE ions when excited at near infrared (NIR) light that are silent to tissues. These features allow not only a high penetration depth in biological tissues but also a high detection sensitivity. Indeed, the energy transfer between UCNPs and biomolecular or chemical indicators provide opportunities for high-sensitive bio- and chemical-sensing. A temperature-sensitive change of the intensity ratio between two close UC bands promises them for use in temperature mapping of a single living cell. In this work, we review recent investigations on using UCNPs for the detection of biomolecules (avidin, ATP, etc.), ions (cyanide, mecury, etc.), small gas molecules (oxygen, carbon dioxide, ammonia, etc.), as well as for in vitro temperature sensing. We also briefly summarize chemical methods in synthesizing UCNPs of high efficiency that are important for the detection limit.

  10. Multilayer Thermal Barrier Coating (TBC) Architectures Utilizing Rare Earth Doped YSZ and Rare Earth Pyrochlores

    Science.gov (United States)

    Schmitt, Michael P.; Rai, Amarendra K.; Bhattacharya, Rabi; Zhu, Dongming; Wolfe, Douglas E.

    2014-01-01

    To allow for increased gas turbine efficiencies, new insulating thermal barrier coatings (TBCs) must be developed to protect the underlying metallic components from higher operating temperatures. This work focused on using rare earth doped (Yb and Gd) yttria stabilized zirconia (t' Low-k) and Gd2Zr2O7 pyrochlores (GZO) combined with novel nanolayered and thick layered microstructures to enable operation beyond the 1200 C stability limit of current 7 wt% yttria stabilized zirconia (7YSZ) coatings. It was observed that the layered system can reduce the thermal conductivity by approximately 45 percent with respect to YSZ after 20 hr of testing at 1316 C. The erosion rate of GZO is shown to be an order to magnitude higher than YSZ and t' Low-k, but this can be reduced by almost 57 percent when utilizing a nanolayered structure. Lastly, the thermal instability of the layered system is investigated and thought is given to optimization of layer thickness.

  11. A Density Functional Theory Study of Doped Tin Monoxide as a Transparent p-type Semiconductor

    KAUST Repository

    Bianchi Granato, Danilo

    2012-05-01

    In the pursuit of enhancing the electronic properties of transparent p-type semiconductors, this work uses density functional theory to study the effects of doping tin monoxide with nitrogen, antimony, yttrium and lanthanum. An overview of the theoretical concepts and a detailed description of the methods employed are given, including a discussion about the correction scheme for charged defects proposed by Freysoldt and others [Freysoldt 2009]. Analysis of the formation energies of the defects points out that nitrogen substitutes an oxygen atom and does not provide charge carriers. On the other hand, antimony, yttrium, and lanthanum substitute a tin atom and donate n-type carriers. Study of the band structure and density of states indicates that yttrium and lanthanum improves the hole mobility. Present results are in good agreement with available experimental works and help to improve the understanding on how to engineer transparent p-type materials with higher hole mobilities.

  12. Experimental and ab initio study of Ta-doped ZnO semiconductor

    Energy Technology Data Exchange (ETDEWEB)

    Munoz, E. L., E-mail: munoz@fisica.unlp.edu.ar; Richard, D., E-mail: richard@fisica.unlp.edu.ar [UNLP, Departamento de Fisica and Instituto de Fisica La Plata (IFLP, CCT La Plata, CONICET), Fac. de Ciencias Exactas (Argentina); Eversheim, P. D. [Universitaet Bonn, Helmholtz-Institut fuer Strahlen-und Kernphysik (H-ISKP) (Germany); Renteria, M., E-mail: renteria@fisica.unlp.edu.ar [UNLP, Departamento de Fisica and Instituto de Fisica La Plata (IFLP, CCT La Plata, CONICET), Fac. de Ciencias Exactas (Argentina)

    2010-04-15

    In this work, we present {gamma}-{gamma} Perturbed-Angular-Correlation results in polycrystalline ZnO semiconductor implanted with {sup 181}Hf({yields}{sup 181}Ta) probes. Calculations in Ta-doped ZnO were carried out using the Full-Potential Augmented Plane Wave plus local orbital method in a supercell and varying self-consistently the charge state of the impurity. Ta is a triple donor impurity with respect to Zn{sup 2 + } in ZnO and thus it can loose 1, 2 or 3 donor electrons under certain circumstances. As expected, the comparison between the experimental Electric-Field-Gradient tensor results and our ab initio predictions shows that the Ta impurity is in an ionized charge state at room temperature.

  13. Experimental and ab initio study of Ta-doped ZnO semiconductor

    International Nuclear Information System (INIS)

    Muñoz, E. L.; Richard, D.; Eversheim, P. D.; Rentería, M.

    2010-01-01

    In this work, we present γ–γ Perturbed-Angular-Correlation results in polycrystalline ZnO semiconductor implanted with 181 Hf(→ 181 Ta) probes. Calculations in Ta-doped ZnO were carried out using the Full-Potential Augmented Plane Wave plus local orbital method in a supercell and varying self-consistently the charge state of the impurity. Ta is a triple donor impurity with respect to Zn 2 +  in ZnO and thus it can loose 1, 2 or 3 donor electrons under certain circumstances. As expected, the comparison between the experimental Electric-Field-Gradient tensor results and our ab initio predictions shows that the Ta impurity is in an ionized charge state at room temperature.

  14. Induced Magnetic Anisotropy in Liquid Crystals Doped with Resonant Semiconductor Nanoparticles

    Directory of Open Access Journals (Sweden)

    Vicente Marzal

    2016-01-01

    Full Text Available Currently, there are many efforts to improve the electrooptical properties of liquid crystals by means of doping them with different types of nanoparticles. In addition, liquid crystals may be used as active media to dynamically control other interesting phenomena, such as light scattering resonances. In this sense, mixtures of resonant nanoparticles hosted in a liquid crystal could be a potential metamaterial with interesting properties. In this work, the artificial magnetism induced in a mixture of semiconductor nanoparticles surrounded by a liquid crystal is analyzed. Effective magnetic permeability of mixtures has been obtained using the Maxwell-Garnett effective medium theory. Furthermore, permeability variations with nanoparticles size and their concentration in the liquid crystal, as well as the magnetic anisotropy, have been studied.

  15. Discovery of earth-abundant nitride semiconductors by computational screening and high-pressure synthesis

    Science.gov (United States)

    Hinuma, Yoyo; Hatakeyama, Taisuke; Kumagai, Yu; Burton, Lee A.; Sato, Hikaru; Muraba, Yoshinori; Iimura, Soshi; Hiramatsu, Hidenori; Tanaka, Isao; Hosono, Hideo; Oba, Fumiyasu

    2016-01-01

    Nitride semiconductors are attractive because they can be environmentally benign, comprised of abundant elements and possess favourable electronic properties. However, those currently commercialized are mostly limited to gallium nitride and its alloys, despite the rich composition space of nitrides. Here we report the screening of ternary zinc nitride semiconductors using first-principles calculations of electronic structure, stability and dopability. This approach identifies as-yet-unreported CaZn2N2 that has earth-abundant components, smaller carrier effective masses than gallium nitride and a tunable direct bandgap suited for light emission and harvesting. High-pressure synthesis realizes this phase, verifying the predicted crystal structure and band-edge red photoluminescence. In total, we propose 21 promising systems, including Ca2ZnN2, Ba2ZnN2 and Zn2PN3, which have not been reported as semiconductors previously. Given the variety in bandgaps of the identified compounds, the present study expands the potential suitability of nitride semiconductors for a broader range of electronic, optoelectronic and photovoltaic applications. PMID:27325228

  16. Influence of Rare Earth Doping on the Structural and Catalytic Properties of Nanostructured Tin Oxide

    Directory of Open Access Journals (Sweden)

    Maciel Adeilton

    2008-01-01

    Full Text Available AbstractNanoparticles of tin oxide, doped with Ce and Y, were prepared using the polymeric precursor method. The structural variations of the tin oxide nanoparticles were characterized by means of nitrogen physisorption, carbon dioxide chemisorption, X-ray diffraction, and X-ray photoelectron spectroscopy. The synthesized samples, undoped and doped with the rare earths, were used to promote the ethanol steam reforming reaction. The SnO2-based nanoparticles were shown to be active catalysts for the ethanol steam reforming. The surface properties, such as surface area, basicity/base strength distribution, and catalytic activity/selectivity, were influenced by the rare earth doping of SnO2and also by the annealing temperatures. Doping led to chemical and micro-structural variations at the surface of the SnO2particles. Changes in the catalytic properties of the samples, such as selectivity toward ethylene, may be ascribed to different dopings and annealing temperatures.

  17. Semiconductor sensor for optically measuring polarization rotation of optical wavefronts using rare earth iron garnets

    Science.gov (United States)

    Duncan, Paul G.

    2002-01-01

    Described are the design of a rare earth iron garnet sensor element, optical methods of interrogating the sensor element, methods of coupling the optical sensor element to a waveguide, and an optical and electrical processing system for monitoring the polarization rotation of a linearly polarized wavefront undergoing external modulation due to magnetic field or electrical current fluctuation. The sensor element uses the Faraday effect, an intrinsic property of certain rare-earth iron garnet materials, to rotate the polarization state of light in the presence of a magnetic field. The sensor element may be coated with a thin-film mirror to effectively double the optical path length, providing twice the sensitivity for a given field strength or temperature change. A semiconductor sensor system using a rare earth iron garnet sensor element is described.

  18. Synthesis and characterization of Mn-doped ZnO diluted magnetic semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Abdel-Galil, A. [Solid State Physics and Accelerators Department, NCRRT, Atomic Energy Authority, Cairo (Egypt); Balboul, M.R., E-mail: m_balboul@yahoo.com [Solid State Physics and Accelerators Department, NCRRT, Atomic Energy Authority, Cairo (Egypt); Sharaf, A. [Radiation Engineering Department, NCRRT, Atomic Energy Authority, Cairo (Egypt)

    2015-11-15

    In the present work undoped and Mn doped ZnO nanoparticles (ZnO:Mn), diluted magnetic semiconductors, were successfully synthesized by the sol–gel method at room temperature. The morphology of ZnO nanoparticles constituted by flower-like structures with hexagonal morphologies that changed significantly after the incorporation of Mn. Rietveld refinements results showed that Mn ions are successfully doped into ZnO matrix without altering its wurtzite phase. Meanwhile, Raman spectroscopy analyses confirm the wurtzite structure of undoped ZnO and ZnO:Mn nanoparticles. The lattice parameters increase with increasing Mn content due to the large ionic radius of Mn{sup 2+} compared to that of Zn{sup 2+}. Electron spin resonance measurements were performed to gain information about oxidation state and site occupancy of the magnetic Mn ions in the ZnO lattice. Moreover, UV–vis absorption spectra have been utilized to calculate the optical band gap of the undoped ZnO and ZnO:Mn nanoparticles before and after different γ-irradiation doses. The band gap of ZnO:Mn (2%) is 2.62 eV which is noticeably smaller than the 3.26 eV of undoped ZnO. The thermal decomposition properties of the prepared nanoparticle samples were also studied using simultaneous Thermogravimetric analysis in temperature range from 30 to 500 °C.

  19. Resistivity analysis of epitaxially grown, doped semiconductors using energy dependent secondary ion mass spectroscopy

    International Nuclear Information System (INIS)

    Burnham, Shawn D.; Thomas, Edward W.; Doolittle, W. Alan

    2006-01-01

    A characterization technique is discussed that allows quantitative optimization of doping in epitaxially grown semiconductors. This technique uses relative changes in the host atom secondary ion (HASI) energy distribution from secondary ion mass spectroscopy (SIMS) to indicate relative changes in conductivity of the material. Since SIMS is a destructive process due to sputtering through a film, a depth profile of the energy distribution of sputtered HASIs in a matrix will contain information on the conductivity of the layers of the film as a function of depth. This process is demonstrated with Mg-doped GaN, with the Mg flux slowly increased through the film. Three distinct regions of conductivity were observed: one with Mg concentration high enough to cause compensation and thus high resistivity, a second with moderate Mg concentration and low resistivity, and a third with little to no Mg doping, causing high resistivity due to the lack of free carriers. During SIMS analysis of the first region, the energy distributions of sputtered Ga HASIs were fairly uniform and unchanging for a Mg flux above the saturation, or compensation, limit. For the second region, the Ga HASI energy distributions shifted and went through a region of inconsistent energy distributions for Mg flux slightly below the critical flux for saturation, or compensation. Finally, for the third region, the Ga HASI energy distributions then settled back into another fairly unchanging, uniform pattern. These three distinct regions were analyzed further through growth of Mg-doped step profiles and bulk growth of material at representative Mg fluxes. The materials grown at the two unchanging, uniform regions of the energy distributions yielded highly resistive material due to too high of Mg concentration and low to no Mg concentration, respectively. However, material grown in the transient energy distribution region with Mg concentration between that of the two highly resistive regions yielded low

  20. Resistivity analysis of epitaxially grown, doped semiconductors using energy dependent secondary ion mass spectroscopy

    Science.gov (United States)

    Burnham, Shawn D.; Thomas, Edward W.; Doolittle, W. Alan

    2006-12-01

    A characterization technique is discussed that allows quantitative optimization of doping in epitaxially grown semiconductors. This technique uses relative changes in the host atom secondary ion (HASI) energy distribution from secondary ion mass spectroscopy (SIMS) to indicate relative changes in conductivity of the material. Since SIMS is a destructive process due to sputtering through a film, a depth profile of the energy distribution of sputtered HASIs in a matrix will contain information on the conductivity of the layers of the film as a function of depth. This process is demonstrated with Mg-doped GaN, with the Mg flux slowly increased through the film. Three distinct regions of conductivity were observed: one with Mg concentration high enough to cause compensation and thus high resistivity, a second with moderate Mg concentration and low resistivity, and a third with little to no Mg doping, causing high resistivity due to the lack of free carriers. During SIMS analysis of the first region, the energy distributions of sputtered Ga HASIs were fairly uniform and unchanging for a Mg flux above the saturation, or compensation, limit. For the second region, the Ga HASI energy distributions shifted and went through a region of inconsistent energy distributions for Mg flux slightly below the critical flux for saturation, or compensation. Finally, for the third region, the Ga HASI energy distributions then settled back into another fairly unchanging, uniform pattern. These three distinct regions were analyzed further through growth of Mg-doped step profiles and bulk growth of material at representative Mg fluxes. The materials grown at the two unchanging, uniform regions of the energy distributions yielded highly resistive material due to too high of Mg concentration and low to no Mg concentration, respectively. However, material grown in the transient energy distribution region with Mg concentration between that of the two highly resistive regions yielded low

  1. Analysis of electrical and microstructural characteristics of a ZnO-based varistor doped with rare earth oxide

    International Nuclear Information System (INIS)

    Andrade, J.M. de; Dias, R.; Furtado, J.G. de M.; Assuncao, F.C.R.

    2010-01-01

    Varistor is a semiconductor device, used in the protection of electrical systems, characterized to have a high no-linear electric resistance. Its properties are directly dependents of its chemical composition and microstructural characteristics. In this work were analyzed microstructural and electrical characteristics of a ZnO-based varistor doped with rare earth oxide, with chemical composition (mol%) 98,5.ZnO - 0,3.Pr 6 O 11 - 0,2.Dy 2 O 3 - 0,9.Co 2 O 3 - 0,1.Cr 2 O 3 . X-ray diffraction for phase characterization, scanning electron microscopy and energy dispersive X-ray spectroscopy were used for microstructural analysis. Measurement of average grain size and electrical and dielectric characteristics complete the characterization. The results show the formation of biphasic microstructure and with high densification, presenting relevant varistors characteristics but that would need improvements.(author)

  2. DFT Calculations using WIEN2K to determine oxygen defect structure of rare earth doped ceria

    CERN Document Server

    Khalife, Ali Rida

    2014-01-01

    We perform density functional calculations using the program WIEN2K in order to study oxygen vacancies in rare earth doped ceria. The calculation for all rare earth elements were prepared, however only those foe Cadmium and Europium were performed due to lack of time. Also a short description of my stay at CERN was presented

  3. Spectroscopy and dynamics of rare earth doped fluorides

    NARCIS (Netherlands)

    Ebens, Willem Omco

    1995-01-01

    The defect structure of RE doped Fluorides has been studied along with the conductivity properties, using a variety of techniques, both experimental and theoretical. Two systems have been studied in detail, which represent two kinds of defect states for RE doped SrFr. The system SrFr:CeF, has been

  4. Electronic Properties of a 1D Intrinsic/p-Doped Heterojunction in a 2D Transition Metal Dichalcogenide Semiconductor

    KAUST Repository

    Song, Zhibo; Schultz, Thorsten; Ding, Zijing; Lei, Bo; Han, Cheng; Amsalem, Patrick; Lin, Tingting; Chi, Dongzhi; Wong, Swee Liang; Zheng, Yu Jie; Li, Ming-yang; Li, Lain-Jong; Chen, Wei; Koch, Norbert; Huang, Yu Li; Wee, Andrew Thye Shen

    2017-01-01

    Two-dimensional (2D) semiconductors offer a convenient platform to study 2D physics, for example, to understand doping in an atomically thin semiconductor. Here, we demonstrate the fabrication and unravel the electronic properties of a lateral doped/intrinsic heterojunction in a single-layer (SL) tungsten diselenide (WSe2), a prototype semiconducting transition metal dichalcogenide (TMD), partially covered with a molecular acceptor layer, on a graphite substrate. With combined experiments and theoretical modeling, we reveal the fundamental acceptor-induced p-doping mechanism for SL-WSe2. At the 1D border between the doped and undoped SL-WSe2 regions, we observe band bending and explain it by Thomas-Fermi screening. Using atomically resolved scanning tunneling microscopy and spectroscopy, the screening length is determined to be in the few nanometer range, and we assess the carrier density of intrinsic SL-WSe2. These findings are of fundamental and technological importance for understanding and employing surface doping, for example, in designing lateral organic TMD heterostructures for future devices.

  5. Electronic Properties of a 1D Intrinsic/p-Doped Heterojunction in a 2D Transition Metal Dichalcogenide Semiconductor

    KAUST Repository

    Song, Zhibo

    2017-07-28

    Two-dimensional (2D) semiconductors offer a convenient platform to study 2D physics, for example, to understand doping in an atomically thin semiconductor. Here, we demonstrate the fabrication and unravel the electronic properties of a lateral doped/intrinsic heterojunction in a single-layer (SL) tungsten diselenide (WSe2), a prototype semiconducting transition metal dichalcogenide (TMD), partially covered with a molecular acceptor layer, on a graphite substrate. With combined experiments and theoretical modeling, we reveal the fundamental acceptor-induced p-doping mechanism for SL-WSe2. At the 1D border between the doped and undoped SL-WSe2 regions, we observe band bending and explain it by Thomas-Fermi screening. Using atomically resolved scanning tunneling microscopy and spectroscopy, the screening length is determined to be in the few nanometer range, and we assess the carrier density of intrinsic SL-WSe2. These findings are of fundamental and technological importance for understanding and employing surface doping, for example, in designing lateral organic TMD heterostructures for future devices.

  6. Theoretical investigation of the heavily-doped semiconductor aspect of ultra-dilute GaAsN

    Science.gov (United States)

    Sukpitak, Jessada; Sa-yakanit, Virulh

    2015-12-01

    The model of GaAs1- y N y ( y = 0.001) as a heavily-doped semiconductor in the ultra-dilute region is attentively examined. The model enables GaAsN to be viewed as a disordered assembly of three-dimensional quantum dots (potential wells) caused by random potential fluctuations from nitrogen pairs in the system. Consequently, Feynman's path-integration technique is applied in order to quantify the density of states (DOS) in the vicinity of the conduction band edge. The obtained DOS tail, even though overestimated, still clearly shows a much shorter tail than that the experimental result does. This shows that the heavily-doped semiconductor viewpoint is not proper for GaAsN, not even in the ultra-dilute region. Furthermore, this also suggests that the impurity wave function overlap is not a basic mechanism of band gap reduction.

  7. Dynamic behavior of correlated electrons in the insulating doped semiconductor Si:P

    Energy Technology Data Exchange (ETDEWEB)

    Ritz, Elvira

    2009-06-04

    At low energy scales charge transport in the insulating Si:P is dominated by activated hopping between the localized donor electron states. Theoretical models for a disordered electronic system with a long-range Coulomb interaction are appropriate to interpret the electric conductivity spectra. With a novel and advanced method we perform broadband phase sensitive measurements of the reflection coefficient from 45 MHz up to 5 GHz, employing a vector network analyzer with a 2.4 mm coaxial sensor, which is terminated by the sample under test. While the material parameters (conductivity and permittivity) can be easily extracted from the obtained impedance data if the sample is metallic, no direct solution is possible if the material under investigation is an insulator. Focusing on doped semiconductors with largely varying conductivity and dielectric function, we present a closed calibration and evaluation procedure with an optimized theoretical and experimental complexity, based on the rigorous solution for the electromagnetic field inside the insulating sample, combined with the variational principle. Basically no limiting assumptions are necessary in a strictly defined parameter range. As an application of our new method, we have measured the complex broadband microwave conductivity of Si:P in a broad range of phosphorus concentration n/n{sub c} from 0.56 to 0.9 relative to the critical value n{sub c}=3.5 x 10{sup 18} cm{sup -3} of the metal-insulator transition driven by doping at temperatures down to 1.1 K, and studied unresolved issues of fundamental research concerning the electronic correlations and the metal-insulator transition. (orig.)

  8. Microstructure and mechanical properties of multi-components rare earth oxide-doped molybdenum alloys

    International Nuclear Information System (INIS)

    Zhang Guojun; Sun Yuanjun; Zuo Chao; Wei Jianfeng; Sun Jun

    2008-01-01

    Pure molybdenum and molybdenum alloys doped with two- or three-components rare earth oxide particles were prepared by powder metallurgy. Both the tensile property and fracture toughness of the pure molybdenum and multi-components rare earth oxide-doped molybdenum alloys were determined at room temperature. The multi-components rare earth oxide-doped molybdenum alloys are fine grained and contain a homogeneous distribution of fine particles in the submicron and nanometer size ranges, which is why the molybdenum alloys have higher strength and fracture toughness than pure molybdenum. Quantitative analysis is used to explain the increase in yield strength with respect to grain size and second phase strengthening. Furthermore, the relationship between the tensile properties and microstructural parameters is quantitatively established

  9. Electrolytic charge inversion at the liquid-solid interface in a nanopore in a doped semiconductor membrane

    Energy Technology Data Exchange (ETDEWEB)

    Gracheva, Maria E [Beckman Institute for Advanced Science and Technology, University of Illinois at Urbana-Champaign, Urbana, IL 61801 (United States); Leburton, Jean-Pierre [Beckman Institute for Advanced Science and Technology, University of Illinois at Urbana-Champaign, Urbana, IL 61801 (United States)

    2007-04-11

    The electrostatics of a nanopore in a doped semiconductor membrane immersed in an electrolyte is studied with a numerical model. Unlike dielectric membranes that always attract excess positive ion charges at the electrolyte/membrane interface whenever a negative surface charge is present, semiconductor membranes exhibit more versatility in controlling the double layer at the membrane surface. The presence of dopant charge in the semiconductor membrane, the shape of the nanopore and the negative surface charge resulting from the pore fabrication process have competing influences on the double layer formation. The inversion of the electrolyte surface charge from negative to positive is observed for n-Si membranes as a function of the membrane surface charge density, while no such inversion occurs for dielectric and p-Si membranes.

  10. Diffusivity-mobility relationship for heavily doped semiconductors exhibiting band tails

    International Nuclear Information System (INIS)

    Khan, Arif; Das, Atanu

    2010-01-01

    A relationship between the mobility and diffusivity of semiconductors exhibiting band tails has been presented. The relationship is general enough to be applicable to both non-degenerate and degenerate semiconductors, and to semiconductors with and without band tails. It is suitable for studying electrical transport in these semiconductors.

  11. Improving soft magnetic properties of Mn-Zn ferrite by rare earth ions doping

    Science.gov (United States)

    Zhong, X. C.; Guo, X. J.; Zou, S. Y.; Yu, H. Y.; Liu, Z. W.; Zhang, Y. F.; Wang, K. X.

    2018-04-01

    Mn-Zn ferrites doped with different Sm2O3, Gd2O3, Ce2O3 or Y2O3 were prepared by traditional ceramic technology using industrial pre-sintered powders. A small amount of Sm2O3, Gd2O3, Ce2O3 or Y2O3 can significantly improve the microstructure and magnetic properties. The single spinel phase structure can be maintained with the doping amount up to 0.07 wt.%. A refined grain structure and uniform grain size distribution can be obtained by doping. For all rare earth oxides, a small amount of doping can significantly increase the permeability and reduce the coercivity and magnetic core loss. The optimized doping amount for Sm2O3 or Gd2O3 is 0.01 wt.%, while for Ce2O3 or Y2O3 is 0.03 wt.%. A further increase of the doping content will lead to reduced soft magnetic properties. The ferrite sample with 0.01 wt.% Sm2O3 exhibits the good magnetic properties with permeability, loss, and coercivity of 2586, 316 W/kg, and 24A/m, respectively, at 200 mT and 100 kHz. The present results indicate that rare earth doping can be suggested to be one of the effective ways to improve the performance of soft ferrites.

  12. Improving soft magnetic properties of Mn-Zn ferrite by rare earth ions doping

    Directory of Open Access Journals (Sweden)

    X. C. Zhong

    2018-04-01

    Full Text Available Mn-Zn ferrites doped with different Sm2O3, Gd2O3, Ce2O3 or Y2O3 were prepared by traditional ceramic technology using industrial pre-sintered powders. A small amount of Sm2O3, Gd2O3, Ce2O3 or Y2O3 can significantly improve the microstructure and magnetic properties. The single spinel phase structure can be maintained with the doping amount up to 0.07 wt.%. A refined grain structure and uniform grain size distribution can be obtained by doping. For all rare earth oxides, a small amount of doping can significantly increase the permeability and reduce the coercivity and magnetic core loss. The optimized doping amount for Sm2O3 or Gd2O3 is 0.01 wt.%, while for Ce2O3 or Y2O3 is 0.03 wt.%. A further increase of the doping content will lead to reduced soft magnetic properties. The ferrite sample with 0.01 wt.% Sm2O3 exhibits the good magnetic properties with permeability, loss, and coercivity of 2586, 316 W/kg, and 24A/m, respectively, at 200 mT and 100 kHz. The present results indicate that rare earth doping can be suggested to be one of the effective ways to improve the performance of soft ferrites.

  13. Deliberate and Accidental Gas-Phase Alkali Doping of Chalcogenide Semiconductors: Cu(In,Ga)Se2.

    Science.gov (United States)

    Colombara, Diego; Berner, Ulrich; Ciccioli, Andrea; Malaquias, João C; Bertram, Tobias; Crossay, Alexandre; Schöneich, Michael; Meadows, Helene J; Regesch, David; Delsante, Simona; Gigli, Guido; Valle, Nathalie; Guillot, Jérome; El Adib, Brahime; Grysan, Patrick; Dale, Phillip J

    2017-02-24

    Alkali metal doping is essential to achieve highly efficient energy conversion in Cu(In,Ga)Se 2 (CIGSe) solar cells. Doping is normally achieved through solid state reactions, but recent observations of gas-phase alkali transport in the kesterite sulfide (Cu 2 ZnSnS 4 ) system (re)open the way to a novel gas-phase doping strategy. However, the current understanding of gas-phase alkali transport is very limited. This work (i) shows that CIGSe device efficiency can be improved from 2% to 8% by gas-phase sodium incorporation alone, (ii) identifies the most likely routes for gas-phase alkali transport based on mass spectrometric studies, (iii) provides thermochemical computations to rationalize the observations and (iv) critically discusses the subject literature with the aim to better understand the chemical basis of the phenomenon. These results suggest that accidental alkali metal doping occurs all the time, that a controlled vapor pressure of alkali metal could be applied during growth to dope the semiconductor, and that it may have to be accounted for during the currently used solid state doping routes. It is concluded that alkali gas-phase transport occurs through a plurality of routes and cannot be attributed to one single source.

  14. Magnetism in Mn-nanowires and -clusters as δ-doped layers in group IV semiconductors (Si, Ge

    Directory of Open Access Journals (Sweden)

    K. R. Simov

    2018-01-01

    Full Text Available Mn doping of group-IV semiconductors (Si/Ge is achieved by embedding nanostructured Mn-layers in group-IV matrix. The Mn-nanostructures are monoatomic Mn-wires or Mn-clusters and capped with an amorphous Si or Ge layer. The precise fabrication of δ-doped Mn-layers is combined with element-specific detection of the magnetic signature with x-ray magnetic circular dichroism. The largest moment (2.5 μB/Mn is measured for Mn-wires with ionic bonding character and a-Ge overlayer cap; a-Si capping reduces the moment due to variations of bonding in agreement with theoretical predictions. The moments in δ-doped layers dominated by clusters is quenched with an antiferromagnetic component from Mn–Mn bonding.

  15. Magnetism in Mn-nanowires and -clusters as δ-doped layers in group IV semiconductors (Si, Ge)

    Science.gov (United States)

    Simov, K. R.; Glans, P.-A.; Jenkins, C. A.; Liberati, M.; Reinke, P.

    2018-01-01

    Mn doping of group-IV semiconductors (Si/Ge) is achieved by embedding nanostructured Mn-layers in group-IV matrix. The Mn-nanostructures are monoatomic Mn-wires or Mn-clusters and capped with an amorphous Si or Ge layer. The precise fabrication of δ-doped Mn-layers is combined with element-specific detection of the magnetic signature with x-ray magnetic circular dichroism. The largest moment (2.5 μB/Mn) is measured for Mn-wires with ionic bonding character and a-Ge overlayer cap; a-Si capping reduces the moment due to variations of bonding in agreement with theoretical predictions. The moments in δ-doped layers dominated by clusters is quenched with an antiferromagnetic component from Mn-Mn bonding.

  16. Transition-metal-doped group-IV monochalcogenides: a combination of two-dimensional triferroics and diluted magnetic semiconductors

    Science.gov (United States)

    Yang, Liu; Wu, Menghao; Yao, Kailun

    2018-05-01

    We report the first-principles evidence of a series of two-dimensional triferroics (ferromagnetic + ferroelectric + ferroelastic), which can be obtained by doping transition-metal ions in group-IV monochalcogenide (SnS, SnSe, GeS, GeSe) monolayers, noting that a ferromagnetic Fe-doped SnS2 monolayer has recently been realized (Li B et al 2017 Nat. Commun. 8 1958). The ferroelectricity, ferroelasticity and ferromagnetism can be coupled and the magnetization direction may be switched upon ferroelectric/ferroelastic switching, rendering electrical writing + magnetic reading possible. They can be also two-dimensional half-metals or diluted magnetic semiconductors, where p/n channels or even multiferroic tunneling junctions can be designed by variation in doping and incorporated into a monolayer wafer.

  17. The electrorheological properties of nano-sized SiO2 particle materials doped with rare earths

    International Nuclear Information System (INIS)

    Liu Yang; Liao Fuhui; Li Junran; Zhang Shaohua; Chen Shumei; Wei Chenguan; Gao Song

    2006-01-01

    Electrorheological (ER) materials of pure SiO 2 and SiO 2 doped with rare earths (RE = Ce, Gd, Y) (non-metallic glasses (silicates)) were prepared using Na 2 SiO 3 and RECl 3 as starting materials. The electrorheological properties are not enhanced by all rare earth additions. The material doped with Ce exhibits the best ER performance

  18. Absorption spectroscopy of complex rare earth ion doped hybrid materials over a broad wavelength range

    OpenAIRE

    Dekker, R.; Worhoff, Kerstin; Stouwdam, J.W.; van Veggel, F.C.J.M.; Driessen, A.

    2005-01-01

    In the present work we applied a measurement setup to determine several relevant properties of rare-earth doped nanoparticles dispersed in polymer slab waveguides in a single absorption measurement: background absorption of the polymer host material, water absorption, polymer composition (overtones), rare earth concentration, and ligand contribution (increase of exponential loss trend in the UV). Furthermore, nanoparticle size and concentration in case of a refractive index mismatch (1//spl l...

  19. Microhardness of epitaxial layers of GaAs doped with rare earths

    International Nuclear Information System (INIS)

    Kulish, U.M.; Gamidov, Z.S.; Kuznetsova, I.Yu.; Petkeeva, L.N.; Borlikova, G.V.

    1989-01-01

    Results of the study of microhardness of GaAS layer doped by certain rare earths - Gd, Tb, Dy - are presented. The assumption is made that the higher is the value of the first potential of rare earth impurity ionization (i.e. the higher is the filling of 4f-shell), the lower is the effect of the element on electric and mechanical properties of GaAs epitaxial layers

  20. Laser induced adjustment of the conductivity of rare earth doped Mn-Zn nanoferrite

    Directory of Open Access Journals (Sweden)

    El-Dek S. I.

    2017-10-01

    Full Text Available Two series of Mn-Zn nanoferrites (namely Mn1-xZnxFe2O4 and Mn1-xZnxFe2-yRyO4 were synthesized using standard ceramic technique. X-ray diffraction and FT-IR were employed in the chacterization of the nanopowder. The X-ray density for each sample increased after laser irradiation which was correlated with the decrease in the unit cell volume. The study involved the thermal and frequency variation of the dielectric constant and AC conductivity of the investigated samples before and after laser irradiation. The later altered the conductivity by decreasing its value for the rare earth doped samples except for the Sm3+ doped one. The results suggested the exploitation of Mn-Zn doped rare earth nanoferrites in many technological applications demanding high resistivity.

  1. Ultrafast Carrier Trapping of a Metal-Doped Titanium Dioxide Semiconductor Revealed by Femtosecond Transient Absorption Spectroscopy

    KAUST Repository

    Sun, Jingya; Yang, Yang; Khan, Jafar I.; Alarousu, Erkki; Guo, Zaibing; Zhang, Xixiang; Zhang, Qiang; Mohammed, Omar F.

    2014-01-01

    We explored for the first time the ultrafast carrier trapping of a metal-doped titanium dioxide (TiO2) semiconductor using broad-band transient absorption (TA) spectroscopy with 120 fs temporal resolution. Titanium dioxide was successfully doped layer-by-layer with two metal ions, namely tungsten and cobalt. The time-resolved data demonstrate clearly that the carrier trapping time decreases progressively as the doping concentration increases. A global-fitting procedure for the carrier trapping suggests the appearance of two time components: a fast one that is directly associated with carrier trapping to the defect state in the vicinity of the conduction band and a slow one that is attributed to carrier trapping to the deep-level state from the conduction band. With a relatively long doping deposition time on the order of 30 s, a carrier lifetime of about 1 ps is obtained. To confirm that the measured ultrafast carrier dynamics are associated with electron trapping by metal doping, we explored the carrier dynamics of undoped TiO2. The findings reported here may be useful for the implementation of high-speed optoelectronic applications and fast switching devices.

  2. Ultrafast Carrier Trapping of a Metal-Doped Titanium Dioxide Semiconductor Revealed by Femtosecond Transient Absorption Spectroscopy

    KAUST Repository

    Sun, Jingya

    2014-06-11

    We explored for the first time the ultrafast carrier trapping of a metal-doped titanium dioxide (TiO2) semiconductor using broad-band transient absorption (TA) spectroscopy with 120 fs temporal resolution. Titanium dioxide was successfully doped layer-by-layer with two metal ions, namely tungsten and cobalt. The time-resolved data demonstrate clearly that the carrier trapping time decreases progressively as the doping concentration increases. A global-fitting procedure for the carrier trapping suggests the appearance of two time components: a fast one that is directly associated with carrier trapping to the defect state in the vicinity of the conduction band and a slow one that is attributed to carrier trapping to the deep-level state from the conduction band. With a relatively long doping deposition time on the order of 30 s, a carrier lifetime of about 1 ps is obtained. To confirm that the measured ultrafast carrier dynamics are associated with electron trapping by metal doping, we explored the carrier dynamics of undoped TiO2. The findings reported here may be useful for the implementation of high-speed optoelectronic applications and fast switching devices.

  3. Absorption spectroscopy of complex rare earth ion doped hybrid materials over a broad wavelength range

    NARCIS (Netherlands)

    Dekker, R.; Worhoff, Kerstin; Stouwdam, J.W.; van Veggel, F.C.J.M.; Driessen, A.

    2005-01-01

    In the present work we applied a measurement setup to determine several relevant properties of rare-earth doped nanoparticles dispersed in polymer slab waveguides in a single absorption measurement: background absorption of the polymer host material, water absorption, polymer composition

  4. Absorption spectroscopy of complex rare earth ion doped hybrid materials over a broad wavelength range

    NARCIS (Netherlands)

    Dekker, R.; Worhoff, Kerstin; Stouwdam, J.W.; van Veggel, F.C.J.M.; Driessen, A.

    In the present work we applied a measurement setup to determine several relevant properties of rare-earth doped nanoparticles dispersed in polymer slab waveguides in a single absorption measurement: background absorption of the polymer host material, water absorption, polymer composition

  5. Bragg-grating-based rare-earth-ion-doped channel waveguide lasers and their applications

    NARCIS (Netherlands)

    Bernhardi, Edward

    2012-01-01

    The research presented in this thesis concerns the investigation and development of Bragggrating-based integrated cavities for the rare-earth-ion-doped Al2O3 (aluminium oxide) waveguide platform, both from a theoretical and an experimental point of view, with the primary purpose of realizing

  6. Spectroscopy and Device Performance of Rare Earth Doped III-Nitrides

    National Research Council Canada - National Science Library

    Hommerich, Uwe

    2002-01-01

    .... Prime candidates for redgreen- blue (RGB) emission are the rare earth ions Eu3+ (red), Er3+ (green), and Tm3+ (blue). A full-color TFEL phosphor system based on RE doped GaN has been demonstrated with high brightness...

  7. Optical-limiting response of rare-earth metallo-phthalocyanine-doped copolymer matrix

    NARCIS (Netherlands)

    Aneeshkumar, B.N.; Gopinath, P.; Vallabhan, C.P.G.; Nampoori, V.P.N.; Radhakrishnan, P.; Thomas, J.

    2003-01-01

    The nanosecond optical-limiting characteristics (at 532 nm) of some rare-earth metallo-phthalocyanines (Sm(Pc)2, Eu(Pc)2, and LaPc) doped in a copolymer matrix of poly(Me methacrylate) and Me-2-cyanoacrylate were studied for the 1st time to the authors' knowledge. The optical-limiting response is

  8. Heterovalent Cation Substitutional and Interstitial Doping in Semiconductor Sensitizers for Quantum Dot Cosensitized Solar Cell

    Directory of Open Access Journals (Sweden)

    Ningning Zhang

    2015-01-01

    Full Text Available Doped films of TiO2/PbS/CdS have been prepared by successive ionic layer adsorption and reaction (SILAR method. Bi- and Ag-doped-PbS quantum dot (QD were produced by admixing Bi3+ or Ag+ during deposition and the existing forms of the doping element in PbS QD were analyzed. The results show that Bi3+ entered the cube space of PbS as donor yielding interstitial doping Bi-doped-PbS QD, while Ag+ replaced Pb2+ of PbS as acceptor yielding substitutional doping Ag-doped-PbS QD. The novel Bi-doped-PbS/CdS and Ag-doped-PbS/CdS quantum dot cosensitized solar cell (QDCSC were fabricated and power conversion efficiency (PCE of 2.4% and 2.2% was achieved, respectively, under full sun illumination.

  9. The effects of heavy doping on the electronic states in semiconductors

    International Nuclear Information System (INIS)

    Sernelius, B.E.

    1987-01-01

    The physics of semiconductors is reviewed. Topics included in the discussion are energy of the dopant system (kinetic energy in a many-valley semiconductor, exchange energy in an ellipsoidal Fermi volume, energy in a polar semiconductor), self energy shifts, band-gap narrowing, and piezo experiments. 31 refs., 27 figs

  10. The microscopic origin of the doping limits in semiconductors and wide-gap materials and recent developments in overcoming these limits: a review

    International Nuclear Information System (INIS)

    Zhang, S.B.

    2002-01-01

    This paper reviews the recent developments in first-principles total energy studies of the phenomenological equilibrium 'doping limit rule' that governs the maximum electrical conductivity of semiconductors via extrinsic or intrinsic doping. The rule relates the maximum equilibrium carrier concentrations (electrons or holes) of a wide range of materials to their respective band alignments. The microscopic origin of the mysterious 'doping limit rule' is the spontaneous formation of intrinsic defects: e.g., in n-type semiconductors, the formation of cation vacancies. Recent developments in overcoming the equilibrium doping limits are also discussed: it appears that a common route to significantly increase carrier concentrations is to expand the physically accessible range of the dopant atomic chemical potential by non-equilibrium doping processes, which not only suppresses the formation of the intrinsic defects but also lowers the formation energy of the impurities, thereby significantly increasing their solubility. (author)

  11. Microstructural and electrical characteristics of rare earth oxides doped ZnO varistor films

    Science.gov (United States)

    Jiao, Lei; Mei, Yunzhu; Xu, Dong; Zhong, Sujuan; Ma, Jia; Zhang, Lei; Bao, Li

    2018-02-01

    ZnO-Bi2O3 varistor films doped with two kinds of rare earth element oxides (Lu2O3 and Yb2O3) were prepared by the sol-gel method. The effects of Lu2O3/Yb2O3 doping on the microstructure and electrical characteristics of ZnO-Bi2O3 varistor films were investigated. All samples show a homogenized morphology and an improved nonlinear relationship between the electric field (E) and current density (I). Both Yb2O3 and Lu2O3 doping can decrease the grain size of ZnO-Bi2O3 varistor films and improve the electrical properties, which have a positive effect on the development of ZnO varistor ceramics. Yb2O3 doping significantly increases the dielectric constant at low frequency. 0.2 mol. % Yb2O3 doped ZnO-Bi2O3 varistor films exhibit the highest nonlinear coefficient (2.5) and the lowest leakage current (328 μA) among Lu2O3/Yb2O3 doped ZnO-Bi2O3 varistor films. Similarly, 0.1 mol. % Lu2O3 doping increases the nonlinear coefficient to 1.9 and decrease the leakage current to 462 μA.

  12. Spectroscopic characterization of manganese-doped alkaline earth ...

    Indian Academy of Sciences (India)

    The shapes of spectra are also changed with varying alkaline earth ions content. ... of manganese ion and electrical properties of glass contain- ing mobile ions like .... octahedral crystal field are located above the ground 6S state. Figure 2.

  13. Fabrication of Ni-doped BiVO_4 semiconductors with enhanced visible-light photocatalytic performances for wastewater treatment

    International Nuclear Information System (INIS)

    Regmi, Chhabilal; Kshetri, Yuwaraj K.; Kim, Tae-Ho; Pandey, Ramesh Prasad; Ray, Schindra Kumar; Lee, Soo Wohn

    2017-01-01

    Highlights: • Synthesis of a Ni-doped BiVO_4 semiconductor photocatalyst with reduced band gap energy. • Ni-doped BiVO_4 provided efficient photocatalytic activity for ibuprofen degradation and E. coli and green tide deactivation. • DFT calculation and thermodynamic modeling to understand the underlying mechanism. - Abstract: A visible-light-driven Ni-doped BiVO_4 photocatalyst was synthesized using a microwave hydrothermal method. The nominal Ni doping amount of 1 wt% provided excellent photoactivity for a variety of water pollutants, such as ibuprofen (pharmaceutical), Escherichia coli (bacteria), and green tides (phytoplankton). Each Ni-doped BiVO_4 sample exhibits better performance than pure BiVO_4. The degradation of ibuprofen reaches 80% within 90 min, the deactivation of Escherichia coli reaches around 92% within 5 h, and the inactivation of green tide (Chlamydomonas pulsatilla) reaches 70% upon 60 min of the visible light irradiation. The first principle calculation and thermodynamic modeling revealed that Ni doping in the vanadium site gives the most stable configuration of the synthesized samples with the formation of an in-gap energy state and oxygen vacancies. The in-gap energy state and the oxygen vacancies serve as an electron-trapping center that decreases the migration time of the photogenerated carrier and increases the separation efficiency of electron-hole pairs, which are responsible for the observed efficient photocatalytic, anti-bacterial and anti-algal activity of the samples. These properties thus suggest potential applications of Ni-doped BiVO_4 as a multifunctional material in the field of wastewater treatment.

  14. Holistic electronic response underlying the development of magnetism in co-doped diluted magnetic semiconductors

    Science.gov (United States)

    Andriotis, Antonis N.; Menon, Madhu

    2018-05-01

    A systematic analysis of the properties of codoped diluted magnetic semiconductors (DMSs) reveals the role and the effect of the codopants in dictating the magnetic features of the DMSs. Our results indicate that the magnetic features of a codoped DMS is the outcome of synergistic electronic processes of the whole system rather than a local hybridization process isolated from the rest of the system. Specifically, the d-orbital hybridization of the (co)dopants and the introduction of their impurity bands lead to the readjustment of the position of the p-band center of the host’s anions and that of the valence band maximum (VBM). The overall effect of these is to pull the hybridized d-bands of the (co)dopants relative to the Fermi energy, E F , which in turn dictate the value of the magnetic moment of both the dopant as well as the codopant. More precisely, the magnetic moment of a dopant shows an almost linearly increasing (decreasing) variation as the dopant’s d-band center (the latter dictated by the codopant) moves away from (gets closer to) E F . Our results thus suggest a completely new approach in the investigation and understanding of the origin of the defect induced magnetism and support previous reports suggesting the Fermi-energy engineering as a mean for developing high T C DMSs. These trends are demonstrated with results obtained for GaN, GaP, and CdS doped with one of the V, Mn, Co and Cu dopants and codoped with the transition metals of the 3d-series.

  15. Photo- and electroluminescence of undoped and rare earth doped ZnO electroluminors

    International Nuclear Information System (INIS)

    Bhushan, S.; Pandey, A.N.; Kaza, B.R.

    1977-01-01

    A series of undoped and rare earth (Dy, Yb, Nd, Pr, Gd, La, Sm and Er) doped ZnO electroluminors have been prepared and their photo- (PL) and electroluminescence (EL) spectra at different concentrations of rare earth ions have been investigated. PL and EL spectra of undoped electroluminescence consist of three peaks. Due to the addition of the rare earth ions these peaks are shifted either to the longer or to the shorter wavelength side. The intensities are also either decreased or increased. Experimental results favour the donor-accepted model for this system. (Auth.)

  16. Synthesis and characterization of rare-earth-doped calcium tungstate nanocrystals

    Science.gov (United States)

    Suneeta, P.; Rajesh, Ch.; Ramana, M. V.

    2018-02-01

    In this paper, we report synthesis and characterization of rare-earth-ion-doped calcium tungstate (CaWO4) nanocrystals (NCs). Rare-earth ions, such as gadolinium (Gd), neodymium (Nd), praseodymium (Pr), samarium (Sm) and holmium (Ho), were successfully doped in the CaWO4 NCs by changing the synthesis conditions. The adopted synthesis route was found to be fast and eco-friendly. Structural characterizations, such as X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FTIR) and compositional analysis, were performed using energy dispersive analysis of X-rays (EDAX) on as-synthesized NCs. The results indicate the size of the NCs ranging between 47 to 68nm and incorporation of rare-earth ions in CaWO4 NCs.

  17. Alkaline earth metal doped tin oxide as a novel oxygen storage material

    Energy Technology Data Exchange (ETDEWEB)

    Dong, Qiang, E-mail: dong@tagen.tohoku.ac.jp [Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, 2-1-1 Katahira, Aoba-ku Sendai 980-8577 (Japan); Yin, Shu; Yoshida, Mizuki; Wu, Xiaoyong; Liu, Bin [Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, 2-1-1 Katahira, Aoba-ku Sendai 980-8577 (Japan); Miura, Akira; Takei, Takahiro; Kumada, Nobuhiro [Department of Research Interdisciplinary Graduate School of Medicine and Engineering, University of Yamanashi, Miyamae cho-7, Kofu 400-8511 (Japan); Sato, Tsugio [Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, 2-1-1 Katahira, Aoba-ku Sendai 980-8577 (Japan)

    2015-09-15

    Alkaline earth metal doped tin oxide (SnO{sub 2}) hollow nanospheres with a diameter of 50 nm have been synthesized successfully via a facial solvothermal route in a very simple system composed of only ethanol, acetic acid, SnCl{sub 4}·5H{sub 2}O and A(NO{sub 3}){sub 2}·xH{sub 2}O (A = Mg, Ca, Sr, Ba). The synthesized undoped SnO{sub 2} and A-doped SnO{sub 2} hollow nanospheres were characterized by the oxygen storage capacity (OSC), X-ray diffraction, transmission electron microscopy and the Brunauer–Emmet–Teller (BET) technique. The OSC values of all samples were measured using thermogravimetric-differential thermal analysis. The incorporation of alkaline earth metal ion into tin oxide greatly enhanced the thermal stability and OSC. Especially, Ba-doped SnO{sub 2} hollow nanospheres calcined at 1000 °C for 20 h with a BET surface area of 61 m{sup 2} g{sup −1} exhibited the considerably high OSC of 457 μmol-O g{sup −1} and good thermal stability. Alkaline earth metal doped tin oxide has the potential to be a novel oxygen storage material.

  18. Changes of fluorescent spectral features after successive rare earth doping of gadolinium oxide powders

    Energy Technology Data Exchange (ETDEWEB)

    Kuznik, W. [Chemical Department, Silesian University of Technology, Gliwice (Poland); Institute of Physics, University of Tartu, Riia 142, Tartu 51014 (Estonia); Brik, M.G. [Institute of Physics, University of Tartu, Riia 142, Tartu 51014 (Estonia); Cieslik, I.; Majchrowski, A.; Jaroszewicz, L. [Institute of Applied Physics, Military University of Technology, Kaliskiego 2, 00-908 Warsaw (Poland); AlZayed, N.S. [Physics and Astronomy Dept., College of Science, P.O. Box 2455, King Saud University, Riyadh 11451 (Saudi Arabia); El-Naggar, A.M. [Physics and Astronomy Dept., College of Science, P.O. Box 2455, King Saud University, Riyadh 11451 (Saudi Arabia); Permanent address: Physics department, Faculty of Science, Ain Shams University, Abassia, Cairo 11566 (Egypt); Sildos, I.; Lange, S.; Kiisk, V. [Institute of Physics, University of Tartu, Riia 142, Tartu 51014 (Estonia); Kityk, I.V., E-mail: ikityk@el.pcz.czest.pl [Electrical Engineering Department, Czestochowa University of Technology, Armii Krajowej 17, Czestochowa (Poland); Physics and Astronomy Dept., College of Science, P.O. Box 2455, King Saud University, Riyadh 11451 (Saudi Arabia)

    2012-01-15

    Highlights: > Principally new phosphors based on rare earth moped Gd{sub 2}O{sub 3} are obtained. > The time-resolved fluorescent spectra show drastic changes with the doping. > Temperature measurements were done. - Abstract: We present a complex fluorescence study of a series of gadolinium oxide polycrystalline powders singly, doubly and triply doped with trivalent rare earth ions (Er{sup 3+}, Tb{sup 3+}, and Dy{sup 3+}), to explore a possibility of their use as materials for white light emitting diodes. The excitation and luminescence spectra along with the decay kinetics were measured in the temperature range from 6 to 300 K. The luminescence efficiency was studied within the visible spectral range, i.e. -400 nm to 750 nm under excitation by 355 nm third harmonic Nd:YAG laser pulses. Singly doped Er{sup 3+} sample gave stronger luminescence signals, but others showed significantly larger decay lifetimes. The successive rare earths doping leads to substantial changes of the spectral positions due to the up-conversion processes. In the singly (Er{sup 3+}) doped sample, following the time resolved spectrum and decay curves, there are two different types of emissions: at 660 nm and at shorter wavelengths (below 640 nm) the red emission's lifetime is ten times longer than at shorter wavelengths. The singly doped sample shows unclear temperature-dependence of luminescence with lifetime at 550 nm (the longest at 100 K, similarly at 6 K and 300 K) and achieved luminous efficacy 73.5 lm/W.

  19. Path-integral calculation of the density of states in heavily doped strongly compensated semiconductors in a magnetic field

    International Nuclear Information System (INIS)

    Koinov, Z.G.; Yanchev, I.Y.

    1981-09-01

    The density of states in heavily doped strongly compansated semiconductors in a strong magnetic field is calculated by using the path-integral method. The case is considered when correlation exists in the impurity positions owing to the Coulomb interactions between the charged donors and acceptors during the high-temperature preparation of the samples. The semiclassical formula is rederived and corrections to it due to the long-range character of the potential and its short-range fluctuations are obtained. The density of states in the tail is studied and analytical results are given in the classical and quantum cases. (author)

  20. Spectroscopic characterization of manganese-doped alkaline earth

    Indian Academy of Sciences (India)

    The intensity and frequency variations for the characteristic phosphate group vibrations have been correlated with the changes of the structural units present in these glasses. Depolymerization of the phosphate chains in all the glasses is observed with replacement of alkaline earth content by spectroscopic studies.

  1. Design of a new two-dimensional diluted magnetic semiconductor: Mn-doped GaN monolayer

    International Nuclear Information System (INIS)

    Zhao, Qian; Xiong, Zhihua; Luo, Lan; Sun, Zhenhui; Qin, Zhenzhen; Chen, Lanli; Wu, Ning

    2017-01-01

    Highlights: • It is found nonmagnetic GaN ML exhibits half-metallic FM behavior by Mn doping due to double exchange mechanism. • Interestingly, the FM coupling is enhanced with the increasing tensile strain due to stronger interaction between Mn-3d and N-2p state. • While, the FM interaction is weakened with the increasing compressive strain until it transforms into AFM under strain of −9.5%. • These results provide a feasible approach for the fabrication of 2D DMS based GaN ML. - Abstract: To meet the need of low-dimensional spintronic devices, we investigate the electronic structure and magnetic properties of Mn-doped GaN monolayer using first-principles method. We find the nonmagnetic GaN monolayer exhibits half-metallic ferromagnetism by Mn doping due to double-exchange mechanism. Interestingly, the ferromagnetic coupling in Mn-doped GaN monolayer is enhanced with tensile strain and weakened with compressive strain. What is more, the ferromagnetic–antiferromagnetic transformation occurs under compressive strain of −9.5%. These results provide a feasible approach for fabrication of a new GaN monolayer based diluted magnetic semiconductor.

  2. Design of a new two-dimensional diluted magnetic semiconductor: Mn-doped GaN monolayer

    Energy Technology Data Exchange (ETDEWEB)

    Zhao, Qian [Key Laboratory for Optoelectronics and Communication of Jiangxi Province, Jiangxi Science & Technology Normal University, Nanchang 330038 (China); Materials Genome Institute, Shanghai University, Shanghai 200444 (China); Xiong, Zhihua, E-mail: xiong_zhihua@126.com [Key Laboratory for Optoelectronics and Communication of Jiangxi Province, Jiangxi Science & Technology Normal University, Nanchang 330038 (China); Luo, Lan [School of Materials Science and Engineering, Nanchang University, Nanchang 330031 (China); Sun, Zhenhui [Key Laboratory for Optoelectronics and Communication of Jiangxi Province, Jiangxi Science & Technology Normal University, Nanchang 330038 (China); Qin, Zhenzhen [College of Electronic Information and Optical Engineering, Nankai University, Tianjin 300071 (China); Chen, Lanli [Materials Genome Institute, Shanghai University, Shanghai 200444 (China); Wu, Ning [Key Laboratory for Optoelectronics and Communication of Jiangxi Province, Jiangxi Science & Technology Normal University, Nanchang 330038 (China)

    2017-02-28

    Highlights: • It is found nonmagnetic GaN ML exhibits half-metallic FM behavior by Mn doping due to double exchange mechanism. • Interestingly, the FM coupling is enhanced with the increasing tensile strain due to stronger interaction between Mn-3d and N-2p state. • While, the FM interaction is weakened with the increasing compressive strain until it transforms into AFM under strain of −9.5%. • These results provide a feasible approach for the fabrication of 2D DMS based GaN ML. - Abstract: To meet the need of low-dimensional spintronic devices, we investigate the electronic structure and magnetic properties of Mn-doped GaN monolayer using first-principles method. We find the nonmagnetic GaN monolayer exhibits half-metallic ferromagnetism by Mn doping due to double-exchange mechanism. Interestingly, the ferromagnetic coupling in Mn-doped GaN monolayer is enhanced with tensile strain and weakened with compressive strain. What is more, the ferromagnetic–antiferromagnetic transformation occurs under compressive strain of −9.5%. These results provide a feasible approach for fabrication of a new GaN monolayer based diluted magnetic semiconductor.

  3. Structure and spectroscopy of rare earthDoped lead phosphate glasses

    International Nuclear Information System (INIS)

    Pisarski, Wojciech A.; Żur, Lidia; Goryczka, Tomasz; Sołtys, Marta; Pisarska, Joanna

    2014-01-01

    Highlights: • Lead phosphate glasses doped with rare earth ions were prepared. • The local structure was examined using X-ray diffraction and spectroscopic methods. • Different structural phosphate groups are present in lead phosphate glasses. • The electron–phonon coupling strength and phonon energy of the glass host was determined. • Several observed emission bands are due to 4f–4f electronic transitions of rare earth ions. -- Abstract: Lead–gallium phosphate glasses doped with rare the earth ions (Eu 3+ , Dy 3+ , Tb 3+ , Er 3+ ) were synthesized. The structure of obtained glasses was examined by means of use: X-ray diffraction (XRD), nuclear magnetic resonance ( 207 Pb and 31 P NMR), fourier transform infrared (FT-IR) and Raman spectroscopy. In contrast to fully amorphous Ln-doped samples (Ln = Eu, Dy, Tb), in Er-doped sample the GaPO 4 crystalline phase was identified. It was found from the NMR, FT-IR and Raman spectroscopic techniques that, different structural phosphate groups were present in lead phosphate glasses. Based on absorption measurements, the UV–VIS cut-off wavelength for lead phosphate glass was determined and its value is close to 305 nm. Excitation and emission spectra of rare earths were also detected. From excitation spectra of Eu 3+ the electron–phonon coupling strength and phonon energy of the glass host were determined. Due to 4f 6 –4f 6 (Eu 3+ ), 4f 8 –4f 8 (Tb 3+ ), 4f 9 –4f 9 (Dy 3+ ) and 4f 11 –4f 11 (Er 3+ ) electronic transitions of trivalent rare earth ions several luminescence bands were stated

  4. Rare earth doped M-type hexaferrites; ferromagnetic resonance and magnetization dynamics

    Directory of Open Access Journals (Sweden)

    Vipul Sharma

    2018-05-01

    Full Text Available M-type hexagonal barium ferrites come in the category of magnetic material that plays a key role in electromagnetic wave propagation in various microwave devices. Due to their large magnetic anisotropy and large magnetization, their operating frequency exceeds above 50 GHz. Doping is a way to vary its magnetic properties to such an extent that its ferromagnetic resonance (FMR response can be tuned over a broad frequency band. We have done a complete FMR study of rare earth elements neodymium (Nd and samarium (Sm, with cobalt (Co as base, doped hexaferrite nanoparticles (NPs. X-ray diffractometry, vibrating sample magnetometer (VSM, and ferromagnetic resonance (FMR techniques were used to characterize the microstructure and magnetic properties of doped hexaferrite nanoparticles. Using proper theoretical electromagnetic models, various parameters are extracted from FMR data which play important role in designing and fabricating high-frequency microwave devices.

  5. Recent Advances of Rare-Earth Ion Doped Luminescent Nanomaterials in Perovskite Solar Cells

    Directory of Open Access Journals (Sweden)

    Yu Qiao

    2018-01-01

    Full Text Available Organic-inorganic lead halide based perovskite solar cells have received broad interest due to their merits of low fabrication cost, a low temperature solution process, and high energy conversion efficiencies. Rare-earth (RE ion doped nanomaterials can be used in perovskite solar cells to expand the range of absorption spectra and improve the stability due to its upconversion and downconversion effect. This article reviews recent progress in using RE-ion-doped nanomaterials in mesoporous electrodes, perovskite active layers, and as an external function layer of perovskite solar cells. Finally, we discuss the challenges facing the effective use of RE-ion-doped nanomaterials in perovskite solar cells and present some prospects for future research.

  6. Preparation of Rare Earth Doped Alumina-Siloxane Gel and Its ER Effect

    Institute of Scientific and Technical Information of China (English)

    李幼荣; 张明; 周兰香; 邱关明; 井上真一; 冈本宏

    2002-01-01

    Poly(methyl methacrylate) (PMMA) was used to wrap alumina-siloxane sol through emulsion polymerization. A kind of suspensions with notable ER effect was produced by fully mixing the prepared microcapsule with silicon oil. Meanwhile a series of PMMA wrapped alumina-siloxane gel doped with rare earths was obtained and its ER effect was tested, like viscosity of different rare earth ion doped samples in different powder concentrations and at different temperatures, at the same time, leak current density and dielectric constant were measured. Results show that the ER effect of this suspension is remarkable, and its stability is much better. The condition of emulsion polymerization and the mechanism of effect are discussed.

  7. Enhanced Laser Cooling of Rare-Earth-Ion-Doped Glass Containing Nanometer-Sized Metallic Particles

    International Nuclear Information System (INIS)

    Jia Youhua; Zhong Biao; Yin Jianping

    2009-01-01

    The enhanced laser cooling performance of rare-earth-ions-doped glasses containing small particles is predicted. This is achieved by the enhancement of local field around rare earth ions, owing to the surface plasmon resonance of small metallic particles. The role of energy transfer between ions and the particle is theoretical discussed. Depending on the particle size and the ion emission quantum efficiency, the enhancement of the absorption and the fluorescence is predicted. Moreover, taking Yb 3+ -doped ZBLAN as example, the cooling power and heat-light converting efficiency are calculated. It is finally concluded that the absorption and the fluorescence are greatly enhanced in these composite materials, the cooling power is increased compared to the bulk material. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  8. Thermoluminescence of double fluorides doped with rare earths

    International Nuclear Information System (INIS)

    Azorin N, J.; Sanchez R, A.; Khaidukov, N.M.

    2004-01-01

    In this work the thermoluminescent characteristics of double fluorides K 2 YF 5 , K 2 GdF 5 and K 2 LuF 5 doped are presented with Tb 3+ , studied in the interval of temperature from 30 to 400 C. The materials that presented better answer to the irradiation with particles beta and with ultraviolet light they were the K 2 YF 5 : Tb (1% at. Tb 3+ ) and the K 2 LuF 5 : Tb (1% at. Tb 3+ ); while the K 2 YF 5 : Tb to high concentrations (10% and 20% at. Tb 3+ ) and the K 2 LuF 5 : Tb (1% at. Tb 3+ ) and the K 2 LuF 5 : Tb (1% at. Tb 3+ ) they presented an acceptable answer in front of the gamma radiation. The intensity of the Tl answer induced in these materials is a decisive factor to continue studying its dosimetric characteristics, what allows to consider them as the base for the development of potential materials to use them in the dosimetry of beta particles, of the UV light of the gamma radiation using the thermoluminescence method. (Author)

  9. Dosimetric and kinetic parameters of lithium cadmium borate glasses doped with rare earth ions

    Directory of Open Access Journals (Sweden)

    J. Anjaiah

    2014-10-01

    Full Text Available Thermoluminescence (TL characteristics of X-ray irradiated pure and doped with four different rare earth ions (viz., Pr3+, Nd3+, Sm3+ and Eu3+ Li2O–Cdo–B2O3 glasses have been studied in the temperature range 303–573 K; the pure glass has exhibited single TL peak at 466 K. When this glass is doped with different rare earth ions no additional peaks are observed but the glow peak temperature of the existing glow peak shifted gradually towards higher temperatures with gain in intensity of TL light output. The area under the glow curve is found to be maximum for Eu3+ doped glasses. The trap depth parameters associated with the observed TL peaks have been evaluated using Chen's formulae. The possible use of these glasses in radiation dosimetry has been described. The result clearly showed that europium doped cadmium borate glass has a potential to be considered as the thermoluminescence dosimeter.

  10. Structural, optical and morphological studies of Cd2+ doping in CH3NH3PbI3 perovskite semiconductor at Pb2+ site for photovoltaic applications

    Science.gov (United States)

    Parrey, Khursheed; Warish, Mohd.; Devi, Nisha; Niazi, A.; Aziz, A.; Ansari, S. G.

    2018-05-01

    Doping of semiconductors in a controlled mannner have paramount technological importance as far as the optical and electronic properties of the devices are concerned. Hybrid organic-inorganic perovskites (HOPs) as intrinsic semiconductors have sensational properties required for both the solar photovoltaics and perovskite light emitting diodes. However, undoped and complexity in the dpoing process of HOPs have limited their exploitation in the field of elcronics. In this papper we present the synthesis of HOP semiconductor (CH3NH3PbI3) doped in Pb2+ position by Cd2+. We studied the effect of the incorporation of Cd2+ into the crystalline structure and analysed the changes in the properties like crystal structure, optical absorption and the surface morphology. The structure of HOPs confirmed by X-ray diffraction analysis is tetragonal perovskite type. It can be found that the crystallinity of the samples was enhanced with the doping concentration as the intensity of diffraction peaks were observed to increase with doping. The absorption spectra as obtained from UV-Visible spectrophotometry and Tauc plot analysis indicated that the band gap observed (1.73 eV) is direct type and gets reduced to 1.67 eV with the doping concentration. The red shift may be due to the increase in the size of nanocrystalline material with doping.

  11. Rare-earth doping of high T/sub c/ superconducting perovskites

    International Nuclear Information System (INIS)

    Mc Kinnon, W.R.; Tarascon, J.M.; Greene, L.H.; Hull, G.W.

    1987-01-01

    In most superconductors, the magnetic moments of rare-earth (Re) ions interact with the conduction electrons and break the Cooper pairs, supressing or destroying superconductivity. But in the perovskite-based superconductors discovered recently, the rare-earth ions are separated from the copper and oxygen where the superconducting electrons are believed to be located. The authors study the effects of rare-earth doping in both the 40K La/sub 2-x/Sr/sub x/CuO/sub 4-y/ system and 90K YBa/sub 2/Cu/sub 3/O/sub 7-x/ system. In these materials, the RE ions only weakly affect superconductivity, and the effects we do see are more strongly correlated with changes in the volume of the crystal than with the magnetism of the rare earths

  12. Factors controlling the thermoluminescence spectra of rare earth doped calcium fluoride

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Y., E-mail: wyfemail@gmail.com [School of Science, China University of Geosciences, Beijing 100083 (China); Zhao, Y. [School of Science, China University of Geosciences, Beijing 100083 (China); White, D. [Barnsley Hospital NHS Foundation Trust, Gawber Road, Barnsley S75 2EP (United Kingdom); Finch, A.A. [Department of Earth & Environmental Sciences, University of St Andrews, Fife KY16 9AL (United Kingdom); Townsend, P.D. [Physics Building, University of Sussex, Brighton BN1 9QH (United Kingdom)

    2017-04-15

    Thermoluminescence spectra of rare earth doped calcium fluoride samples, both powder and single crystal, were recorded over the temperature range from 25 K to 673 K. Although some broad band features exist, the spectra are dominated by the rare earth line transitions. The glow peak temperatures are slightly sensitive both to the ionic size of the dopants and the dopant concentration. By contrast, very considerable differences are generated by heat treatments, such as annealing followed by either fast or slow cooling. Comments are included on the reasons for such sensitivity in terms of association of dopant and intrinsic defect sites and why the results of dosimetry powder differ from those from single crystals.

  13. Enhanced Laser Cooling of Rare-Earth-Ion-Doped Composite Material

    International Nuclear Information System (INIS)

    You-Hua, Jia; Biao, Zhong; Xian-Ming, Ji; Jian-Ping, Yin

    2008-01-01

    We predict enhanced laser cooling performance of rare-earth-ions-doped glasses containing nanometre-sized ul-traBne particles, which can be achieved by the enhancement of local Geld around rare earth ions, owing to the surface plasma resonance of small metallic particles. The influence of energy transfer between ions and the particle is theoretically discussed. Depending on the particle size and the ion emission quantum efficiency, the enhancement of the absorption is predicted. It is concluded that the absorption are greatly enhanced in these composite materials, the cooling power is increased as compared to the bulk material

  14. Valence change in rare earth semiconductors in many-impurity Anderson model

    International Nuclear Information System (INIS)

    Kocharyan, A.N.

    1986-01-01

    Green functions averaged over point impurity localization are found out in the simplest many-impurity model of rare earth semiconductor taking into account local Coulomb repulsion and hybridization of s- and f-electrons. Analytical expressions for s- and f-electron states density are obtained in the appoximation linear in can centration. Behaviour of a state density nearly the continuous spectrum edge and in the vicinity of the f-level is studied as a function of electron parameters. A comparison with the Anderson one-impurity model is performed. It is shown that essential energy spectrum conversion occurs in the case of a great number of impurities close to the continuous spectrum. Continuous spectrum boundaries are found out, and conditions are defined, at which the forbidden energy gap occurs in the continuous spectrum nearly a f-level. Effect of the coherent conversion of spectrum on behaviour of valence in changing f-level position is analyzed. It is shown that in the lack of electron-lattice interaction the phase transition with valence change occurs in a smooth manner as in the model with strictly periodic Andersen lattice

  15. Structural properties of lithium borate glasses doped with rare earth ions

    Directory of Open Access Journals (Sweden)

    Thomazini D.

    2001-01-01

    Full Text Available This paper presents the study on lithium triborate glass (LBO in the system (1-x|3B2O3.Li2O| (xNb2O5 yPr3+ zYb3+ wNd3+ with 0 <= x <= 20 mol% (y, z and w in mol%. The samples were studied by Raman spectroscopy, infrared absorption and differential thermal analysis. Pr3+-doped LBO and Pr3+/Yb3+-doped LBO samples show an increase of the glass transition and crystallization temperatures and a decrease of the fusion temperature associated with the increase of the praseodymium concentration in the LBO matrix. For the Nd3+-doped LBO and Pr3+/Yb3+-doped (LBO+Nb2O5 samples, a decrease of the glass transition temperature of the samples was observed. The increase of the rare earth doping leads to an increase of the difference between the glass transition and the crystallization temperatures. From infrared analysis it was possible to identify all the modes associated to the B-O structure. The NbO6 octahedra was also identified by IR spectroscopy for samples with x=5, 10, 15 and 20 mol% and y=0.05, z=1.1 mol%. Raman spectroscopy shows the presence of boroxol rings, tetrahedral and triangular coordination for boron. For samples containing niobium, the Raman spectra show the vibrational mode associated with the Nb-O bond in the niobium octahedra (NbO6.

  16. Cross Relaxation in rare-earth-doped oxyfluoride glasses

    Energy Technology Data Exchange (ETDEWEB)

    Lakshminarayana, G.; Weis, Eric M. [Materials Science and Technology Division (MST-7), Los Alamos National Laboratory, Los Alamos, NM 87545 (United States); Lira, A.C. [Unidad Académica Profesional Nezahualcóyotl, Universidad Autónoma del Estado de México, Av. Bordo de Xochiaca s/n, Nezahualcóyotl, Estado de Mexico 57000, México (Mexico); Caldiño, Ulises [Departamento de Física, Universidad Autónoma Metropolitana-Iztapalapa, P.O. Box 55-534, México D.F. 09340 (Mexico); Williams, Darrick J. [Center for Integrated Nanotechnologies, Los Alamos National Laboratory, Los Alamos, NM 87545 (United States); Hehlen, Markus P., E-mail: hehlen@lanl.gov [Materials Science and Technology Division (MST-7), Los Alamos National Laboratory, Los Alamos, NM 87545 (United States)

    2013-07-15

    The excited-state relaxation dynamics of Tb{sup 3+}, Sm{sup 3+}, and Eu{sup 3+} doped into a 50SiO{sub 2}–20Al{sub 2}O{sub 3}–10Na{sub 2}O–20LaF{sub 3} (mol%) oxyfluoride glass are studied. Multiphonon relaxation of the primary emitting states in Tb{sup 3+} ({sup 5}D{sub 3} and {sup 5}D{sub 4}), Sm{sup 3+} ({sup 4}G{sub 5/2}), and Eu{sup 3+} ({sup 5}D{sub 0}) was found to be negligible in the present host. The relaxation of Tb{sup 3+} ({sup 5}D{sub 4}) and Eu{sup 3+} ({sup 5}D{sub 0}) is dominated by radiative decay. For Tb{sup 3+} ({sup 5}D{sub 3}) and Sm{sup 3+} ({sup 4}G{sub 5/2}) in contrast, radiative relaxation is in competition with several non-radiative cross-relaxation processes. This competition was found to be particularly pronounced for the {sup 5}D{sub 3} excited state in Tb{sup 3+}, where a 124-fold decrease of the ({sup 5}D{sub 3}→{sup 7}F{sub 5})/({sup 5}D{sub 4}→{sup 7}F{sub 5}) emission intensity ratio and a ∼10-fold shortening of the {sup 5}D{sub 3} lifetime was observed upon increasing the Tb{sup 3+} concentration from 0.01% to 1%. The Tb{sup 3+} concentration dependence of {sup 5}D{sub 3} also points to some degree of ion aggregation in the “as quenched” glasses. A Judd–Ofelt intensity analysis was performed for Sm{sup 3+} and used to estimate the relative magnitude of {sup 4}G{sub 5/2} cross-relaxation processes. Four cross-relaxation processes in particular were identified to account for 92% of the total {sup 4}G{sub 5/2} non-radiative decay, and a 11% quantum efficiency was estimated for the {sup 4}G{sub 5/2} excited state. Non-exponentiality in the {sup 5}D{sub 0} decay of Eu{sup 3+} is evidence for several Eu{sup 3+} coordination environments in the glass host that manifest in different {sup 5}D{sub 0} decay constants because of the hypersensitivity of the {sup 5}D{sub 0}→{sup 7}F{sub 2} transition. -- Highlights: ► Tb{sup 3+}, Sm{sup 3+}, and Eu{sup 3+} were doped into a LaF{sub 3}-rich oxyfluoride glass. ► The

  17. Searching Room Temperature Ferromagnetism in Wide Gap Semiconductors Fe-doped Strontium Titanate and Zinc Oxide

    CERN Document Server

    Pereira, LMC; Wahl, U

    Scientific findings in the very beginning of the millennium are taking us a step further in the new paradigm of technology: spintronics. Upgrading charge-based electronics with the additional degree of freedom of the carriers spin-state, spintronics opens a path to the birth of a new generation of devices with the potential advantages of non-volatility and higher processing speed, integration densities and power efficiency. A decisive step towards this new age lies on the attribution of magnetic properties to semiconductors, the building block of today's electronics, that is, the realization of ferromagnetic semiconductors (FS) with critical temperatures above room temperature. Unfruitful search for intrinsic RT FS lead to the concept of Dilute(d) Magnetic Semiconductors (DMS): ordinary semiconductor materials where 3 d transition metals randomly substitute a few percent of the matrix cations and, by some long-range mechanism, order ferromagnetically. The times are of intense research activity and the last fe...

  18. Ultrafast nonlinear carrier dynamics in doped semiconductors in high THz fields

    DEFF Research Database (Denmark)

    Hoffmann, Matthias C.; Turchinovich, Dmitry

    2011-01-01

    THz frequency saturable absorption and intervalley carrier scattering in n-type semiconductors were observed using intensity-dependent transmission experiments as well as THz-pump—THz probe spectroscopy with ultrabroadband probe pulses.......THz frequency saturable absorption and intervalley carrier scattering in n-type semiconductors were observed using intensity-dependent transmission experiments as well as THz-pump—THz probe spectroscopy with ultrabroadband probe pulses....

  19. Structural, optical, magnetic and photocatalytic properties of Co doped CuS diluted magnetic semiconductor nanoparticles

    International Nuclear Information System (INIS)

    Sreelekha, N.; Subramanyam, K.; Amaranatha Reddy, D.; Murali, G.; Ramu, S.; Rahul Varma, K.; Vijayalakshmi, R.P.

    2016-01-01

    Highlights: • Cu_1_−_xCo_xS nanoparticles were synthesized via chemical co-precipitation method. • Structural, band gap, magnetization and photocatalysis studies were carried out. • All the doped samples exhibited intrinsic room temperature ferromagnetism. • Effect of magnetic properties on photocatalytic activity was analyzed. • CuS:Co nanoparticles may find applications in photocatalytic and spintronic devices. - Abstract: Pristine and Co doped covellite CuS nanoparticles were synthesized in aqueous solution by facile chemical co-precipitation method with Ethylene Diamine Tetra Acetic Acid (EDTA) as a stabilizing agent. EDAX measurements confirmed the presence of Co in the CuS host lattice. Hexagonal crystal structure of pure and Co doped CuS nanoparticles were authenticated by XRD patterns. TEM images indicated that sphere-shape of nanoparticles through a size ranging from 5 to 8 nm. The optical absorption edge moved to higher energies with increase in Co concentration as indicated by UV–vis spectroscopy. Magnetic measurements revealed that bare CuS sample show sign of diamagnetic character where as in Co doped nanoparticles augmentation of room temperature ferromagnetism was observed with increasing doping precursor concentrations. Photocatalytic performance of the pure and Co doped CuS nanoparticles were assessed by evaluating the degradation rate of rhodamine B solution under sun light irradiation. The 5% Co doped CuS nanoparticles provide evidence for high-quality photocatalytic activity.

  20. Structural, optical, magnetic and photocatalytic properties of Co doped CuS diluted magnetic semiconductor nanoparticles

    Energy Technology Data Exchange (ETDEWEB)

    Sreelekha, N.; Subramanyam, K. [Department of Physics, Sri Venkateswara University, Tirupati 517502 (India); Department of Physics, Raghu Engineering College, Visakhapatnam, Andrapradesh 531162 (India); Amaranatha Reddy, D. [Department of Chemistry and Chemical Institute for Functional Materials, Pusan National University, Busan 609735 (Korea, Republic of); Murali, G. [Department of BIN Fusion Technology & Department of Polymer-Nano Science and Technology, Chonbuk National University, Jeonju, Jeonbuk (Korea, Republic of); Ramu, S. [Department of Physics, Sri Venkateswara University, Tirupati 517502 (India); Rahul Varma, K. [Department of Mechanical Engineering, University of California, Berkeley (United States); Vijayalakshmi, R.P., E-mail: vijayaraguru@gmail.com [Department of Physics, Sri Venkateswara University, Tirupati 517502 (India)

    2016-08-15

    Highlights: • Cu{sub 1−x}Co{sub x}S nanoparticles were synthesized via chemical co-precipitation method. • Structural, band gap, magnetization and photocatalysis studies were carried out. • All the doped samples exhibited intrinsic room temperature ferromagnetism. • Effect of magnetic properties on photocatalytic activity was analyzed. • CuS:Co nanoparticles may find applications in photocatalytic and spintronic devices. - Abstract: Pristine and Co doped covellite CuS nanoparticles were synthesized in aqueous solution by facile chemical co-precipitation method with Ethylene Diamine Tetra Acetic Acid (EDTA) as a stabilizing agent. EDAX measurements confirmed the presence of Co in the CuS host lattice. Hexagonal crystal structure of pure and Co doped CuS nanoparticles were authenticated by XRD patterns. TEM images indicated that sphere-shape of nanoparticles through a size ranging from 5 to 8 nm. The optical absorption edge moved to higher energies with increase in Co concentration as indicated by UV–vis spectroscopy. Magnetic measurements revealed that bare CuS sample show sign of diamagnetic character where as in Co doped nanoparticles augmentation of room temperature ferromagnetism was observed with increasing doping precursor concentrations. Photocatalytic performance of the pure and Co doped CuS nanoparticles were assessed by evaluating the degradation rate of rhodamine B solution under sun light irradiation. The 5% Co doped CuS nanoparticles provide evidence for high-quality photocatalytic activity.

  1. Novel online security system based on rare-earth-doped glass microbeads

    Science.gov (United States)

    Officer, Simon; Prabhu, G. R.; Pollard, Pat; Hunter, Catherine; Ross, Gary A.

    2004-06-01

    A novel fluorescent security label has been produced that could replace numerous conventional fluorescent dyes in document security. This label utilizes rare earth ions doped in a borosilicate glass matrix to produce sharp spectral fluorescence peaks with characteristic long lifetimes due to the rare earth ions. These are subsequently detected by an online detection system based on fluorescence and the long lifetimes to avoid any interference from other fluorophores present in the background. Security is further enhanced by the interaction of the rare earth ions with each other and the effect of the host on the emission spectra and therefore the number of permutations that could be produced. This creates a very secure label with various applications for the security market.

  2. Room temperature ferromagnetism in Fe-doped semiconductor ZrS2 single crystals

    Science.gov (United States)

    Muhammad, Zahir; Lv, Haifeng; Wu, Chuanqiang; Habib, Muhammad; Rehman, Zia ur; Khan, Rashid; Chen, Shuangming; Wu, Xiaojun; Song, Li

    2018-04-01

    Two dimensional (2D) layered magnetic materials have obtained much attention due to their intriguing properties with a potential application in the field of spintronics. Herein, room-temperature ferromagnetism with 0.2 emu g‑1 magnetic moment is realized in Fe-doped ZrS2 single crystals of millimeter size, in comparison with diamagnetic behaviour in ZrS2. The electron paramagnetic resonance spectroscopy reveals that 5.2wt% Fe-doping ZrS2 crystal exhibit high spin value of g-factor about 3.57 at room temperature also confirmed this evidence, due to the unpaired electrons created by doped Fe atoms. First principle static electronic and magnetic calculations further confirm the increased stability of long range ferromagnetic ordering and enhanced magnetic moment in Fe-doped ZrS2, originating from the Fe spin polarized electron near the Fermi level.

  3. Low-temperature photoluminescence in chalcogenide glasses doped with rare-earth ions

    Energy Technology Data Exchange (ETDEWEB)

    Kostka, Petr, E-mail: petr.kostka@irsm.cas.cz [Institute of Rock Structure and Mechanics AS CR, V Holešovičkách 41, 182 09 Praha 8 (Czech Republic); Zavadil, Jiří [Institute of Photonics and Electronics AS CR, Chaberská 57, 182 51 Praha 8, Kobylisy (Czech Republic); Iovu, Mihail S. [Institute of Applied Physics, Academy of Sciences of Moldova, Str. Academiei 5, MD-28 Chisinau, Republic of Moldova (Moldova, Republic of); Ivanova, Zoya G. [Institute of Solid State Physics, Bulgarian Academy of Sciences, 1784 Sofia (Bulgaria); Furniss, David; Seddon, Angela B. [Mid-Infrared Photonics Group, George Green Institute for Electromagnetics Research, University of Nottingham, University Park, Nottingham NG7 2RD (United Kingdom)

    2015-11-05

    Sulfide and oxysulfide bulk glasses Ga-La-S-O, Ge-Ga-S and Ge-Ga-As-S doped, or co-doped, with various rare-earth (RE{sup 3+}) ions are investigated for their room temperature transmission and low-temperature photoluminescence. Photoluminescence spectra are collected by using external excitation into the Urbach tail of the fundamental absorption edge of the host-glass. The low-temperature photoluminescence spectra are dominated by the broad-band luminescence of the host glass, with superimposed relatively sharp emission bands due to radiative transitions within 4f shells of RE{sup 3+} ions. In addition, the dips in the host-glass luminescence due to 4f-4f up-transitions of RE{sup 3+} ions are observed in the Ge-Ga-S and Ge-Ga-As-S systems. These superimposed narrow effects provide a direct experimental evidence of energy transfer between the host glass and respective RE{sup 3+} dopants. - Highlights: • An evidence of energy transfer from host-glass to doped-in RE ions is presented. • Energy transfer is manifested by dips in host-glass broad-band luminescence. • This channel of energy transfer is documented on selected RE doped sulfide glasses. • Photoluminescence spectra are dominated by broad band host-glass luminescence. • Presence of RE ions is manifested by superimposed narrow 4f-4f transitions.

  4. Electrostatic tuning of Kondo effect in a rare-earth-doped wide-band-gap oxide

    KAUST Repository

    Li, Yongfeng; Deng, Rui; Lin, Weinan; Tian, Yufeng; Peng, Haiyang; Yi, Jiabao; Yao, Bin; Wu, Tao

    2013-01-01

    As a long-lived theme in solid-state physics, the Kondo effect reflects the many-body physics involving the short-range Coulomb interactions between itinerant electrons and localized spins in metallic materials. Here we show that the Kondo effect is present in ZnO, a prototypical wide-band-gap oxide, doped with a rare-earth element (Gd). The localized 4f electrons of Gd ions do not produce remanent magnetism, but interact strongly with the host electrons, giving rise to a saturating resistance upturn and negative magnetoresistance at low temperatures. Furthermore, the Kondo temperature and resistance can be electrostatically modulated using electric-double-layer gating with liquid ionic electrolyte. Our experiments provide the experimental evidence of tunable Kondo effect in ZnO, underscoring the magnetic interactions between localized and itinerant electrons and the emergent transport behaviors in such doped wide-band-gap oxides.

  5. Fluorescence yield in rare-earth-doped sol-gel silicate glasses

    Energy Technology Data Exchange (ETDEWEB)

    Silversmith, A.J., E-mail: asilvers@hamilton.ed [Physics Department, Hamilton College, 198 College Hill Road, Clinton, NY 13323 (United States); Nguyen, Nguyen T.T.; Campbell, D.L. [Physics Department, Hamilton College, 198 College Hill Road, Clinton, NY 13323 (United States); Boye, D.M.; Ortiz, C.P. [Davidson College, Davidson, NC 28035 (United States); Hoffman, K.R. [Whitman College, Walla Walla, WA 99362 (United States)

    2009-12-15

    We have used trivalent terbium to investigate the mechanism behind fluorescence enhancement by Al{sup 3+} co-doping. Our results indicate that rare-earth (RE) ions cluster together in aluminum-rich regions of the glass, and behave as if they were dispersed uniformly throughout these regions when the ratio of Al to RE is {approx}10 or greater. We also studied the effects of adding chemical drying agents to the precursor solution for the synthesis of sol-gel-derived silicate glasses. Such glasses can be treated at significantly higher annealing temperatures without degradation of optical quality, and have the density of melt glass. Fluorescence yield from doped RE ions improves markedly with the addition of the drying agents, and the denser glasses are not subject to rehydration.

  6. Electrostatic tuning of Kondo effect in a rare-earth-doped wide-band-gap oxide

    KAUST Repository

    Li, Yongfeng

    2013-04-29

    As a long-lived theme in solid-state physics, the Kondo effect reflects the many-body physics involving the short-range Coulomb interactions between itinerant electrons and localized spins in metallic materials. Here we show that the Kondo effect is present in ZnO, a prototypical wide-band-gap oxide, doped with a rare-earth element (Gd). The localized 4f electrons of Gd ions do not produce remanent magnetism, but interact strongly with the host electrons, giving rise to a saturating resistance upturn and negative magnetoresistance at low temperatures. Furthermore, the Kondo temperature and resistance can be electrostatically modulated using electric-double-layer gating with liquid ionic electrolyte. Our experiments provide the experimental evidence of tunable Kondo effect in ZnO, underscoring the magnetic interactions between localized and itinerant electrons and the emergent transport behaviors in such doped wide-band-gap oxides.

  7. Nonlinear propagation of strong-field THz pulses in doped semiconductors

    DEFF Research Database (Denmark)

    Turchinovich, Dmitry; Hvam, Jørn Märcher; Hoffmann, Matthias C.

    2012-01-01

    We report on nonlinear propagation of single-cycle THz pulses with peak electric fields reaching 300 kV/cm in n-type semiconductors at room temperature. Dramatic THz saturable absorption effects are observed in GaAs, GaP, and Ge, which are caused by the nonlinear electron transport in THz fields....... The semiconductor conductivity, and hence the THz absorption, is modulated due to the acceleration of carriers in strong THz fields, leading to an increase of the effective mass of the electron population, as the electrons are redistributed from the low-momentum, low-effective-mass states to the high-momentum, high...

  8. Phase Transformation and Lattice Parameter Changes of Non-trivalent Rare Earth-Doped YSZ as a Function of Temperature

    Science.gov (United States)

    Jiang, Shengli; Huang, Xiao; He, Zhang; Buyers, Andrew

    2018-05-01

    To examine the effect of doping/co-doping on high-temperature phase compositions of YSZ, stand-alone YSZ and CeO2 and Nb2O5 co-doped YSZ samples were prepared using mechanical alloy and high-temperature sintering. XRD analysis was performed on these samples from room temperature to 1100 °C. The results show that the structure for the co-doped samples tends to be thermally stable when the test temperature is higher than a critical value. Monoclinic phase was dominant in Nb2O5 co-doped YSZ at temperatures lower than 600 °C, while for the YSZ and CeO2 co-doped YSZ, cubic/tetragonal phase was dominant in the whole test temperature range. The lattice parameters for all the samples increase with increasing test temperature generally. The lattice parameters for the two non-trivalent rare earth oxides co-doped YSZ show that the lattice parameter a for the cubic phase of the Ce4+ co-doped YSZ is consistently greater than that of 7YSZ which is related to the presence of larger radius of Ce4+ in the matrix. The lattice parameters a, b, c for the monoclinic phase of Ce4+ co-doped YSZ are much closer to each other than that of the Nb5+ co-doped YSZ, indicating the former has better tendency to form cubic/tetragonal phase, which is desired for vast engineering applications.

  9. All-optical control of long-lived nuclear spins in rare-earth doped nanoparticles.

    Science.gov (United States)

    Serrano, D; Karlsson, J; Fossati, A; Ferrier, A; Goldner, P

    2018-05-29

    Nanoscale systems that coherently couple to light and possess spins offer key capabilities for quantum technologies. However, an outstanding challenge is to preserve properties, and especially optical and spin coherence lifetimes, at the nanoscale. Here, we report optically controlled nuclear spins with long coherence lifetimes (T 2 ) in rare-earth-doped nanoparticles. We detect spins echoes and measure a spin coherence lifetime of 2.9 ± 0.3 ms at 5 K under an external magnetic field of 9 mT, a T 2 value comparable to those obtained in bulk rare-earth crystals. Moreover, we achieve spin T 2 extension using all-optical spin dynamical decoupling and observe high fidelity between excitation and echo phases. Rare-earth-doped nanoparticles are thus the only nano-material in which optically controlled spins with millisecond coherence lifetimes have been reported. These results open the way to providing quantum light-atom-spin interfaces with long storage time within hybrid architectures.

  10. Fiber-optic thermometer application of thermal radiation from rare-earth end-doped SiO2 fiber

    International Nuclear Information System (INIS)

    Katsumata, Toru; Morita, Kentaro; Komuro, Shuji; Aizawa, Hiroaki

    2014-01-01

    Visible light thermal radiation from SiO 2 glass doped with Y, La, Ce, Pr, Nd, Eu, Tb, Dy, Ho, Er, Tm, Yb, and Lu were studied for the fiber-optic thermometer application based on the temperature dependence of thermal radiation. Thermal radiations according to Planck's law of radiation are observed from the SiO 2 fibers doped with Y, La, Ce, Pr, Eu, Tb, and Lu at the temperature above 1100 K. Thermal radiations due to f-f transitions of rare-earth ions are observed from the SiO 2 fibers doped with Nd, Dy, Ho, Er, Tm, and Yb at the temperature above 900 K. Peak intensities of thermal radiations from rare-earth doped SiO 2 fibers increase sensitively with temperature. Thermal activation energies of thermal radiations by f-f transitions seen in Nd, Dy, Ho, Er, Tm, and Yb doped SiO 2 fibers are smaller than those from SiO 2 fibers doped with Y, La, Ce, Pr, Eu, Tb, and Lu. Thermal radiation due to highly efficient f-f transitions in Nd, Dy, Ho, Er, Tm, and Yb ions emits more easily than usual thermal radiation process. Thermal radiations from rare-earth doped SiO 2 are potentially applicable for the fiber-optic thermometry above 900 K

  11. First-principles electronic structure of Mn-doped GaAs, GaP, and GaN semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Schulthess, T C [Computer Science and Mathematics Division and Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, TN 37831-6164 (United States); Temmerman, W M [Daresbury Laboratory, Daresbury, Warrington WA4 4AD (United Kingdom); Szotek, Z [Daresbury Laboratory, Daresbury, Warrington WA4 4AD (United Kingdom); Svane, A [Department of Physics and Astronomy, University of Aarhus, DK-8000 Aarhus C (Denmark); Petit, L [Computer Science and Mathematics Division and Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, TN 37831-6164 (United States)

    2007-04-23

    We present first-principles electronic structure calculations of Mn-doped III-V semiconductors based on the local spin-density approximation (LSDA) as well as the self-interaction corrected local spin-density method (SIC-LSD). We find that it is crucial to use a self-interaction free approach to properly describe the electronic ground state. The SIC-LSD calculations predict the proper electronic ground state configuration for Mn in GaAs, GaP, and GaN. Excellent quantitative agreement with experiment is found for the magnetic moment and p-d exchange in (GaMn)As. These results allow us to validate commonly used models for magnetic semiconductors. Furthermore, we discuss the delicate problem of extracting binding energies of localized levels from density functional theory calculations. We propose three approaches to take into account final state effects to estimate the binding energies of the Mn d levels in GaAs. We find good agreement between computed values and estimates from photoemission experiments.

  12. First-principles electronic structure of Mn-doped GaAs, GaP, and GaN semiconductors

    International Nuclear Information System (INIS)

    Schulthess, T C; Temmerman, W M; Szotek, Z; Svane, A; Petit, L

    2007-01-01

    We present first-principles electronic structure calculations of Mn-doped III-V semiconductors based on the local spin-density approximation (LSDA) as well as the self-interaction corrected local spin-density method (SIC-LSD). We find that it is crucial to use a self-interaction free approach to properly describe the electronic ground state. The SIC-LSD calculations predict the proper electronic ground state configuration for Mn in GaAs, GaP, and GaN. Excellent quantitative agreement with experiment is found for the magnetic moment and p-d exchange in (GaMn)As. These results allow us to validate commonly used models for magnetic semiconductors. Furthermore, we discuss the delicate problem of extracting binding energies of localized levels from density functional theory calculations. We propose three approaches to take into account final state effects to estimate the binding energies of the Mn d levels in GaAs. We find good agreement between computed values and estimates from photoemission experiments

  13. Elaboration and characterization of a KCl single crystal doped with nanocrystals of a Sb2O3 semiconductor

    International Nuclear Information System (INIS)

    Bouhdjer, L.; Addala, S.; Halimi, O.; Boudine, B.; Sebais, M.; Chala, A.

    2013-01-01

    Undoped and doped KCl single crystals have been successfully elaborated via the Czochralski (Cz) method. The effects of dopant Sb 2 O 3 nanocrystals on structural and optical properties were investigated by a number of techniques, including X-ray diffraction (XRD), scanning electron microscopy (SEM), energy dispersive X-ray (EDAX) analysis, UV-visible and photoluminescence (PL) spectrophotometers. An XRD pattern of KCl:Sb 2 O 3 reveals that the Sb 2 O 3 nanocrystals are in the well-crystalline orthorhombic phase. The broadening of diffraction peaks indicated the presence of a Sb 2 O 3 semiconductor in the nanometer size regime. The shift of absorption and PL peaks is observed near 334 nm and 360 nm respectively due to the quantum confinement effect in Sb 2 O 3 nanocrystals. Particle sizes calculated from XRD studies agree fairly well with those estimated from optical studies. An SEM image of the surface KCl:Sb 2 O 3 single crystal shows large quasi-spherical of Sb 2 O 3 crystallites scattered on the surface. The elemental analysis from EDAX demonstrates that the KCl:Sb 2 O 3 single crystal is slightly rich in oxygen and a source of excessive quantities of oxygen is discussed. (semiconductor materials)

  14. Room temperature transparent conducting magnetic oxide (TCMO properties in heavy ion doped oxide semiconductor

    Directory of Open Access Journals (Sweden)

    Juwon Lee

    2017-08-01

    Full Text Available Bismuth doped ZnO (ZnBi0.03O0.97 thin films are grown using pulsed laser deposition. The existence of positively charged Bi, absence of metallic zinc and the Zn-O bond formation in Bi doped ZnO are confirmed using X-ray Photoelectron Spectroscopy (XPS. Temperature dependent resistivity and UV-visible absorption spectra show lowest resistivity with 8.44 × 10-4 Ω cm at 300 K and average transmittance of 93 % in the visible region respectively. The robust ferromagnetic signature is observed at 350 K (7.156 × 10-4 emu/g. This study suggests that Bi doped ZnO films should be a potential candidate for spin based optoelectronic applications.

  15. Atomic scale study of intrinsic and Mn doped quantum dots in III-V semiconductors

    NARCIS (Netherlands)

    Bozkurt, M.

    2011-01-01

    In this thesis, a Cross Sectional Scanning Tunneling Microscope (X-STM) is used to investigate nanostructures in IIIV semiconductors and single Mn impurities in bulk GaAs. The atomic resolution which can be achieved with X-STM makes it possible to link structural properties of nanostructures to

  16. Highly doped semiconductor plasmonic nanoantenna arrays for polarization selective broadband surface-enhanced infrared absorption spectroscopy of vanillin

    Science.gov (United States)

    Barho, Franziska B.; Gonzalez-Posada, Fernando; Milla, Maria-Jose; Bomers, Mario; Cerutti, Laurent; Tournié, Eric; Taliercio, Thierry

    2017-11-01

    Tailored plasmonic nanoantennas are needed for diverse applications, among those sensing. Surface-enhanced infrared absorption (SEIRA) spectroscopy using adapted nanoantenna substrates is an efficient technique for the selective detection of molecules by their vibrational spectra, even in small quantity. Highly doped semiconductors have been proposed as innovative materials for plasmonics, especially for more flexibility concerning the targeted spectral range. Here, we report on rectangular-shaped, highly Si-doped InAsSb nanoantennas sustaining polarization switchable longitudinal and transverse plasmonic resonances in the mid-infrared. For small array periodicities, the highest reflectance intensity is obtained. Large periodicities can be used to combine localized surface plasmon resonances (SPR) with array resonances, as shown in electromagnetic calculations. The nanoantenna arrays can be efficiently used for broadband SEIRA spectroscopy, exploiting the spectral overlap between the large longitudinal or transverse plasmonic resonances and narrow infrared active absorption features of an analyte molecule. We demonstrate an increase of the vibrational line intensity up to a factor of 5.7 of infrared-active absorption features of vanillin in the fingerprint spectral region, yielding enhancement factors of three to four orders of magnitude. Moreover, an optimized readout for SPR sensing is proposed based on slightly overlapping longitudinal and transverse localized SPR.

  17. Highly doped semiconductor plasmonic nanoantenna arrays for polarization selective broadband surface-enhanced infrared absorption spectroscopy of vanillin

    Directory of Open Access Journals (Sweden)

    Barho Franziska B.

    2017-11-01

    Full Text Available Tailored plasmonic nanoantennas are needed for diverse applications, among those sensing. Surface-enhanced infrared absorption (SEIRA spectroscopy using adapted nanoantenna substrates is an efficient technique for the selective detection of molecules by their vibrational spectra, even in small quantity. Highly doped semiconductors have been proposed as innovative materials for plasmonics, especially for more flexibility concerning the targeted spectral range. Here, we report on rectangular-shaped, highly Si-doped InAsSb nanoantennas sustaining polarization switchable longitudinal and transverse plasmonic resonances in the mid-infrared. For small array periodicities, the highest reflectance intensity is obtained. Large periodicities can be used to combine localized surface plasmon resonances (SPR with array resonances, as shown in electromagnetic calculations. The nanoantenna arrays can be efficiently used for broadband SEIRA spectroscopy, exploiting the spectral overlap between the large longitudinal or transverse plasmonic resonances and narrow infrared active absorption features of an analyte molecule. We demonstrate an increase of the vibrational line intensity up to a factor of 5.7 of infrared-active absorption features of vanillin in the fingerprint spectral region, yielding enhancement factors of three to four orders of magnitude. Moreover, an optimized readout for SPR sensing is proposed based on slightly overlapping longitudinal and transverse localized SPR.

  18. Exchange Enhancement of the Electron-Phonon Interaction: The Case of Weakly Doped Two-Dimensional Multivalley Semiconductors

    Science.gov (United States)

    Pamuk, Betül; Zoccante, Paolo; Baima, Jacopo; Mauri, Francesco; Calandra, Matteo

    2018-04-01

    The effect of the exchange interaction on the vibrational properties and on the electron-phonon coupling were investigated in several recent works. In most of the cases, exchange tends to enhance the electron-phonon interaction, although the motivations for such behaviour are not completely understood. Here we consider the class of weakly doped two-dimensional multivalley semiconductors and we demonstrate that a more global picture emerges. In particular we show that in these systems, at low enough doping, even a moderate electron-electron interaction enhances the response to any perturbation inducing a valley polarization. If the valley polarization is due to the electron-phonon coupling, the electron-electron interaction results in an enhancement of the superconducting critical temperature. We demonstrate the applicability of the theory by performing random phase approximation and first principles calculations in transition metal chloronitrides. We find that exchange is responsible for the enhancement of the superconducting critical temperature in LixZrNCl and that much larger Tcs could be obtained in intercalated HfNCl if the synthesis of cleaner samples could remove the Anderson insulating state competing with superconductivity.

  19. Fibre Tip Sensors for Localised Temperature Sensing Based on Rare Earth-Doped Glass Coatings

    Directory of Open Access Journals (Sweden)

    Erik P. Schartner

    2014-11-01

    Full Text Available We report the development of a point temperature sensor, based on monitoring upconversion emission from erbium:ytterbium-doped tellurite coatings on the tips of optical fibres. The dip coating technique allows multiple sensors to be fabricated simultaneously, while confining the temperature-sensitive region to a localised region on the end-face of the fibre. The strong response of the rare earth ions to changing temperature allows a resolution of 0.1–0.3 °C to be recorded over the biologically relevant range of temperatures from 23–39 °C.

  20. Scintillation property of rare earth-free SnO-doped oxide glass

    OpenAIRE

    Masai, Hirokazu; Yanagida, Takayuki; Fujimoto, Yutaka; Koshimizu, Masanori; Yoko, Toshinobu

    2012-01-01

    The authors have demonstrated scintillation of rare earth (RE)-free Sn-doped oxide glass by excitation of ionizing radiation. It is notable that light emission is attained for RE-free transparent glass due to s[2]-sp transition of Sn[2+] centre and the emission correlates with the excitation band at 20 eV. We have also demonstrated that excitation band of emission centre can be tuned by the chemical composition of the host glass. The present result is valuable not only for design of RE-free i...

  1. Evaluation of structural and optical properties of Ce3+ ions doped (PVA/PVP) composite films for new organic semiconductors

    Science.gov (United States)

    Ali, F. M.; Kershi, R. M.; Sayed, M. A.; AbouDeif, Y. M.

    2018-06-01

    Polymer blend films based on Polyvinyl alcohol (PVA)/Poly(vinylpyrrolidone) (PVP) doped with different concentration of cerium ions [(PVA/PVP)-x wt.% Ce3+] (x = 3%, 5%, 10% and 15%) were prepared by the conventional solution casting technique. The characteristics of the prepared polymer composite films were studied using X-ray diffraction (XRD), FT-IR and UV-Vis. spectroscopy. The XRD patterns of the investigated samples revealed a clear reduction on the structural parameters such as crystallinity degree and cluster size D of the doped PVA/PVP blend films compared with the virgin one whereas there is no big difference in the d spacing of the product composite films. Significant changes in FT-IR spectra are observed which reveal an interactions between the cerium ions and PVA/PVP blends. The absorption spectra in the ultraviolet-visible region showed a wide red shift in the fundamental absorption edge of (PVA/PVP)-x wt. % Ce3+ composites. The optical gap Eg gradually decreased from 4.54 eV for the undoped PVA/PVP film to 3.10 eV by increasing Ce3+ ions content. The optical dispersion parameters have been analyzed according to Wemple-Didomenico single oscillator model. The dispersion energy Ed, the single oscillator energy Eo, the average inter-band oscillator wavelength λo and the static refractive index no are strongly affected by cerium ions doping. Cerium ions incorporation in PVA/PVP blend films leads to a significant increase in the refractive index and decrease in the optical gap. These results are likely of great important in varieties of applications including polymer waveguides, organic semiconductors, polymer solar cells and optoelectronics devices.

  2. Mechanism of luminescent emission in BaY2F8 scintillators doped with rare earths

    International Nuclear Information System (INIS)

    Santos, Ana Carolina de Mello

    2013-01-01

    with an analysis of X-ray absorption spectroscopy (XAS) and X-rays Excited Optical Luminescence (XEOL) allowed the development of a model for the scintillation mechanism for the rare earth doped BaYF systems. (author)

  3. Properties of RF magnetron sputtered gallium nitride semiconductors doped with erbium

    Czech Academy of Sciences Publication Activity Database

    Peřina, Vratislav; Macková, Anna; Hnatowicz, Vladimír; Prajzler, V.; Machovič, V.; Matějka, P.; Schröfel, J.

    2004-01-01

    Roč. 36, č. 8 (2004), s. 952-954 ISSN 0142-2421 R&D Projects: GA ČR GA104/03/0387 Institutional research plan: CEZ:AV0Z1048901 Keywords : Er-doped GaN * luminescence * magnetron sputtering Subject RIV: BG - Nuclear, Atomic and Molecular Physics, Colliders Impact factor: 1.209, year: 2004

  4. Reduced Charge Transfer Exciton Recombination in Organic Semiconductor Heterojunctions by Molecular Doping

    NARCIS (Netherlands)

    Deschler, Felix; Da Como, Enrico; Limmer, Thomas; Tautz, Raphael; Godde, Tillmann; Bayer, Manfred; von Hauff, Elizabeth; Yilmaz, Seyfullah; Allard, Sybille; Scherf, Ullrich; Feldmann, Jochen

    2011-01-01

    We investigate the effect of molecular doping on the recombination of electrons and holes localized at conjugated-polymer–fullerene interfaces. We demonstrate that a low concentration of p-type dopant molecules (<4% weight) reduces the interfacial recombination via charge transfer excitons and

  5. Application of multicomponent diffusion theory for description of impurities distribution in complex diffusive doping of semiconductors

    International Nuclear Information System (INIS)

    Uskov, V.A.; Kondrachenko, O.E.; Kondrachenko, L.A.

    1977-01-01

    A phenomenological theory of multicomponent diffusion involving interaction between the components is employed to analyze how the interaction between two admixtures affects their simultaneous or consequent diffusion into a semiconductor. The theory uses the equations of multicomponent dissusion under common conditions (constant diffusion coefficients and equilibrium distribution of vacancies). The experiments are described on In and Sb simultaneous diffusion into Ge. The diffusion is performed according to the routine gas phase technology with the use of radioactive isotopes In 114 and Sb 124 . It is shown that the introduction of an additional diffusion coefficient D 12 makes it possible to simply and precisely describe the distribution of interacting admixtures in complex diffusion alloying of semiconductors

  6. Alkaline earth metal and samarium co-doped ceria as efficient electrolytes

    Science.gov (United States)

    Ali, Amjad; Raza, Rizwan; Kaleem Ullah, M.; Rafique, Asia; Wang, Baoyuan; Zhu, Bin

    2018-01-01

    Co-doped ceramic electrolytes M0.1Sm0.1Ce0.8O2-δ (M = Ba, Ca, Mg, and Sr) were synthesized via co-precipitation. The focus of this study was to highlight the effects of alkaline earth metals in doped ceria on the microstructure, densification, conductivity, and performance. The ionic conductivity comparisons of prepared electrolytes in the air atmosphere were studied. It has been observed that Ca0.1Sm0.1Ce0.8O2-δ shows the highest conductivity of 0.124 Scm-1 at 650 °C and a lower activation energy of 0.48 eV. The cell shows a maximum power density of 630 mW cm-2 at 650 °C using hydrogen fuel. The enhancement in conductivity and performance was due to increasing the oxygen vacancies in the ceria lattice with the increasing dopant concentration. The bandgap was calculated from UV-Vis data, which shows a red shift when compared with pure ceria. The average crystallite size is in the range of 37-49 nm. DFT was used to analyze the co-doping structure, and the calculated lattice parameter was compared with the experimental lattice parameter.

  7. Optical and structural characterization of rare earth doped niobium phosphate glasses

    International Nuclear Information System (INIS)

    Sene, F.F.; Martinelli, J.R.; Gomes, L.

    2004-01-01

    Phosphate glasses containing up to 45mol% of niobium were obtained. X-ray diffraction, infrared, Raman, and optical absorption spectroscopy were used to analyze those materials. The refractive index varies from 1.70 to 1.85 as the amount of Nb increases. Niobium phosphate glasses with optical transparence in the (400-2500nm) range were produced. The cut off varied from 342nm to 378nm as a function of the Nb concentration. The cut off is due to the charge transfer O 2 ->Nb 5+ . Glasses containing 10mol% of Nb 2 O 5 are the most promising materials to be used as rare-earth ions hosts because they are chemically resistant, and show optical transparency in the spectral range of visible to infrared. Doping the glasses with 1-5mol% of Er, Ho, Pr, and Yb ions does not change the glass structure, as measured by X-ray diffraction, infrared, and Raman spectroscopy. The fluorescence lifetimes were determined for Nd, Yb, and Er, and the absorption cross-section were determined for all ions. The energy transfer in co-doped Yb-Er system was measured, and the lifetime of excited states and the luminescence efficiency were determined to be 91% for the Er 4 I 11/2 level, in the Yb-Er co-doped glasses

  8. Effect of alkaline earth metal doping on thermal, optical, magnetic and dielectric properties of BiFeO3 nanoparticles

    International Nuclear Information System (INIS)

    Bhushan, B; Das, D; Basumallick, A; Bandopadhyay, S K; Vasanthacharya, N Y

    2009-01-01

    Substrate-free pure-phase BiFeO 3 (BFO) nanoparticles doped with alkaline earth metals (Ba, Sr and Ca) have been synthesized by a sol-gel route and their thermal, optical, dielectric and magnetic properties are discussed. The characteristic structural phase transitions of BFO nanoparticles are found to occur at much lower temperatures. A reduction of the Neel temperature has been observed in the doped samples in comparison with the pristine one, whereas the band gap shows a reverse trend. Iron was found to be only in the Fe 3+ valence state in all the doped samples. Magnetoelectric coupling is seen in our samples. Weak ferromagnetism is observed at room temperature in all of the doped and undoped BFO nanoparticles with the largest value of coercive field ∼1.78 kOe and saturation magnetization ∼2.38 emu g -1 for Ba and Ca doped BFO nanoparticles, respectively.

  9. Doping Properties of Ferromagnetic Semiconductors Investigated by the Hyperfine Interaction of Implanted Radioisotopes

    CERN Multimedia

    2002-01-01

    One of the most promising prospective applications of semiconductors will be in the field of spinelectronics. Thereby polarized spins must be injected into semiconductor structures. Ferromagnetic semiconductors (FMS) have a potential for such applications because of the coexistence of semiconducting and ferromagnetic properties. A special group of such FMS are the chromium chalcogenides of type AB$_{2}$C$_{4}$ with B = Cr. They crystallise in the structure of normal spinel. In this Proposal the application of the perturbed angular correlation technique (= PAC) for the investigation of nuclear probes in these substances is described. The radioactive probes will be implanted at the ISOLDE separator. We will start these investigations with the substances CdCr$_{2}$Se$_{4}$, CdCr$_{2}$S$_{4}$, HgCr$_{2}$Se$_{4}$, CuCr$_{2}$Se$_{4}$ and CuCr$_{2}$S$_{4}$ which are ferromagnetic with Curie temperatures between 84.5 and 460 K. In addition to the popular $^{111}$In($^{111}$Cd), which we get from other facilities, we ...

  10. Halogen doping of II-VI semiconductors during molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Waag, A.; Litz, Th.; Fischer, F.; Heinke, H.; Scholl, S.; Hommel, D.; Landwehr, G. (Physikalisches Inst. der Univ. Wuerzburg (Germany)); Bilger, G. (Zentrum fuer Sonnenenergie und Wasserstoff-Forschung, Stuttgart (Germany))

    1994-04-14

    Results on the halogen doping of CdTe, (CdMn)Te as well as (CdMg)Te thin films and quantum well structures are reported. The structures were grown by molecular beam epitaxy. The samples have been investigated by Van der Pauw, photoconductivity, X-ray diffraction, XPS and SIMS measurements. ZnCl[sub 2] and ZnBr[sub 2] have been used as dopant sources. Free carrier concentrations at room temperature above 10[sup 18] cm[sup -3] can easily be achieved for CdTe for a wide range of Cd/Te flux ratios and substrate temperatures. In the ternary alloys, the free carrier concentration decreases drastically with increasing x-values, despite a constant incorporation of the dopant species. In addition, persistent photoconductivity has been observed in n-type doped ternary thin films at low temperatures. The decrease of the free carrier concentration with x-value is common to other wide-gap ternary alloys, and the reason for it is discussed in the frame of DX-like deep donor impurities in ternary II-VI compounds. In first experiments on planar halogen doping of CdTe, a doping level of 5x10[sup 18] cm[sup -3] could be reached in the doped regions, the highest value ever reported for CdTe. A clear influence of dopant incorporation on the structural quality of CdTe thin films has been seen even for dopant concentrations of as low as 10[sup 18] cm[sup -3]. The FWHM of the rocking curves decreased by a factor of 2 with increasing dopant incorporation. SIMS as well as XPS measurements demonstrate that the Cl/Zn and Br/Zn ratio in the doped films is 2/1, but no chemical shift corresponding to Zn-Cl or Zn-Br bonds could be detected. A model for the incorporation of the halogens is proposed on the basis of these results

  11. Synthesis and sorption properties of new synthesized rare-earth-doped sodium titanate

    International Nuclear Information System (INIS)

    Ali, I.M.

    2010-01-01

    A series of rare-earth-doped sodium titanates with the chemical formula R x H y Na 4-(x+y) TiO 4 ·nH 2 O (where R = Ce 3+ , Nd 3+ and Sm 3+ ) were grown employing solid-state fusion reaction technique. The physico-chemical investigations indicated that the new materials were self engineered into large particles enough to be used in sorption process and having crystalline structures containing localized Na + ions. Equilibrium studies revealed that an enhancement in sorption efficiency of sodium titanate after rare-earth doping. The neodymium-rich sodium titanate exhibited a better exchange affinity for Cs + compared to the other studied series. Data on the kinetics of cesium exchange fit well to pseudo-second order and intra-particle diffusion models. In a separate experiment, it was reported that the R-HNaTi series showed responsible sorption affinity toward Ce, Nd and Sm ions in their solution mixture with insignificant selectivity trend which reflects the high stability of titanate matrices. (author)

  12. Structure, electronic properties, luminescence and chromaticity investigations of rare earth doped KMgBO{sub 3} phosphors

    Energy Technology Data Exchange (ETDEWEB)

    Zheng, Jianghui; Cheng, Qijin [School of Energy Research, Xiamen University, Xiamen 361005 (China); Wu, Shunqing [Department of Physics, Xiamen University, Xiamen, 361005 (China); Zhuang, Yixi [College of Materials, Xiamen University, Xiamen 361005 (China); Guo, Ziquan; Lu, Yijun [Department of Electronic Science, Fujian Engineering Research Center for Solid-state Lighting, Xiamen University, Xiamen 361005 (China); Chen, Chao, E-mail: cchen@xmu.edu.cn [School of Energy Research, Xiamen University, Xiamen 361005 (China); Department of Physics, Xiamen University, Xiamen, 361005 (China); Department of Electronic Science, Fujian Engineering Research Center for Solid-state Lighting, Xiamen University, Xiamen 361005 (China)

    2015-09-01

    In this work, the optimization of the geometry and the electronic properties of the host matrix KMgBO{sub 3} were investigated using density functional theory, and the comprehensive photoluminescence and chromaticity properties on five rare earth ion-doped (RE = Ce{sup 3+}, Tm{sup 3+}, Tb{sup 3+}, Eu{sup 3+}, Dy{sup 3+}) KMgBO{sub 3} phosphors were also studied. By introducing RE ions into the KMgBO{sub 3} host, excellent purple, blue, green, red and white emitting light could be obtained under the near-ultraviolet light excitation. The results suggest that rare earth doped KMgBO{sub 3} phosphors are potential luminescence materials for the application in the near-ultraviolet white light-emitting diodes. - Highlights: • The electronic properties of the host matrix KMgBO{sub 3} were investigated. • The PL properties on rare earth ions doped KMgBO{sub 3} phosphors were studied. • The chromaticity properties on rare earth ions doped KMgBO{sub 3} samples were studied. • Tm{sup 3+} and Eu{sup 3+} doped KMgBO{sub 3} samples show higher color purity than commercial phosphors.

  13. Stabilization in laser wavelength semiconductor with fiber optical amplifier application doped with erbium

    International Nuclear Information System (INIS)

    Camas, J.; Anzueto, G.; Mendoza, S.; Hernandez, H.; Garcia, C.; Vazquez, R.

    2009-01-01

    In this work, we present a novel electronic design of a DC source, which automatically controls the temperature of a tunable laser. The temperature change in the laser is carried out by the control of DC that circulates through a cooling stage where the laser is set. The laser can be tuned in a wavelength around 1550 nm. Its application is in Erbium Doped Fiber Amplifier (EDFA) in reflective configuration. (Author)

  14. P-doped organic semiconductor: Potential replacement for PEDOT:PSS in organic photodetectors

    Energy Technology Data Exchange (ETDEWEB)

    Herrbach, J.; Revaux, A., E-mail: amelie.revaux@cea.fr [University of Grenoble Alpes, CEA-LITEN, Grenoble 38000 (France); Vuillaume, D. [IEMN, CNRS, University of Lille, Villeneuve d' Ascq 59652 (France); Kahn, A. [Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544 (United States)

    2016-08-15

    In this work, we present an alternative to the use of PEDOT:PSS as hole transport and electron blocking layers in organic photodetectors processed by solution. As Poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate) (PEDOT:PSS) is known to be sensitive to humidity, oxygen, and UV, removing this layer is essential for lifetime improvements. As a first step to achieving this goal, we need to find an alternative layer that fulfills the same role in order to obtain a working diode with similar or better performance. As a replacement, a layer of poly[(4,8-bis-(2-ethylhexyloxy)-benzo(1,2-b:4,5-b′)dithiophene)-2, 6-diyl-alt-(4-(2-ethylhexanoyl)-thieno[3,4-b]thiophene-)-2-6-diyl)] (PBDTTT-c) p-doped with the dopant tris-[1-(trifluoroethanoyl)-2-(trifluoromethyl)ethane-1,2-dithiolene] (Mo(tfd-COCF{sub 3}){sub 3}) is used. This p-doped layer effectively lowers the hole injection barrier, and the low electron affinity of the polymer prevents the injection of electrons into the active layer. We show similar device performance under light and the improvements of detection performance with the doped layer in comparison with PEDOT:PSS, leading to a detectivity of 1.9 × 10{sup 13} cm (Hz){sup 1/2} (W){sup −1}, competitive with silicon diodes used in imaging applications. Moreover, contrary to PEDOT:PSS, no localization of the p-doped layer is needed, leading to a diode active area defined by the patterned electrodes.

  15. Magnetic properties of Mn-doped ZnO diluted magnetic semiconductors

    International Nuclear Information System (INIS)

    Liu Xuechao; Zhang Huawei; Zhang Tao; Chen Boyuan; Chen Zhizhan; Song Lixin; Shi Erwei

    2008-01-01

    A series of Mn-doped ZnO films have been prepared in different sputtering plasmas by using the inductively coupled plasma enhanced physical vapour deposition. The films show paramagnetic behaviour when they are deposited in an argon plasma. The Hall measurement indicates that ferromagnetism cannot be realized by increasing the electron concentration. However, the room-temperature ferromagnetism is obtained when the films are deposited in a mixed argon-nitrogen plasma. The first-principles calculations reveal that antiferromagnetic ordering is favoured in the case of the substitution of Mn 2+ for Zn 2+ without additional acceptor doping. The substitution of N for O (N O −) is necessary to induce ferromagnetic couplings in the Zn-Mn-O system. The hybridization between N 2p and Mn 3d provides an empty orbit around the Fermi level. The hopping of Mn 3d electrons through the empty orbit can induce the ferromagnetic coupling. The ferromagnetism in the N-doped Zn-Mn-O system possibly originates from the charge transfer between Mn 2+ and Mn 3+ via N O − . The key factor is the empty orbit provided by substituting N for O, rather than the conductivity type or the carrier concentration

  16. Fatigue Resistance of Filled NR with PMMA-Wrapped and Rare Earth-Doped Alumina-Siloxane Gel

    Institute of Scientific and Technical Information of China (English)

    2002-01-01

    Poly (methyl methacrylate) (PMMA) was used to wrap alumina-siloxane sol which was produced by water glass, aluminum nitrate and α-methacrylic acid, and as a result, alumina-siloxane gel wrapped by PMMA was obtained. Meanwhile, rare earth ions were employed to dope in the course of reaction, and the formed rare earth doped PMMA microcapsule powder was filled into natural rubber (NR). It is found through the analysis of mechanical properties that Young′s modulus universally improves and a remarkable resistance to fatigue is displayed. Retention rate of tensile strength is twice that of the controlled sample after ten thousand times of extension fatigue.

  17. A position-dependent mass model for the Thomas–Fermi potential: Exact solvability and relation to δ-doped semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Schulze-Halberg, Axel, E-mail: xbataxel@gmail.com [Department of Mathematics and Actuarial Science, Indiana University Northwest, 3400 Broadway, Gary IN 46408 (United States); García-Ravelo, Jesús; Pacheco-García, Christian [Escuela Superior de Física y Matemáticas, Instituto Politécnico Nacional, Unidad Profesional Adolfo López Mateos, Zacatenco, 07738 México D.F. (Mexico); Juan Peña Gil, José [Universidad Autónoma Metropolitana - Azcapotzalco, CBI - Area de Física Atómica Molecular Aplicada, Av. San Pablo 180, Reynosa Azcapotzalco, 02200 México D.F. (Mexico)

    2013-06-15

    We consider the Schrödinger equation in the Thomas–Fermi field, a model that has been used for describing electron systems in δ-doped semiconductors. It is shown that the problem becomes exactly-solvable if a particular effective (position-dependent) mass distribution is incorporated. Orthogonal sets of normalizable bound state solutions are constructed in explicit form, and the associated energies are determined. We compare our results with the corresponding findings on the constant-mass problem discussed by Ioriatti (1990) [13]. -- Highlights: ► We introduce an exactly solvable, position-dependent mass model for the Thomas–Fermi potential. ► Orthogonal sets of solutions to our model are constructed in closed form. ► Relation to delta-doped semiconductors is discussed. ► Explicit subband bottom energies are calculated and compared to results obtained in a previous study.

  18. A position-dependent mass model for the Thomas–Fermi potential: Exact solvability and relation to δ-doped semiconductors

    International Nuclear Information System (INIS)

    Schulze-Halberg, Axel; García-Ravelo, Jesús; Pacheco-García, Christian; Juan Peña Gil, José

    2013-01-01

    We consider the Schrödinger equation in the Thomas–Fermi field, a model that has been used for describing electron systems in δ-doped semiconductors. It is shown that the problem becomes exactly-solvable if a particular effective (position-dependent) mass distribution is incorporated. Orthogonal sets of normalizable bound state solutions are constructed in explicit form, and the associated energies are determined. We compare our results with the corresponding findings on the constant-mass problem discussed by Ioriatti (1990) [13]. -- Highlights: ► We introduce an exactly solvable, position-dependent mass model for the Thomas–Fermi potential. ► Orthogonal sets of solutions to our model are constructed in closed form. ► Relation to delta-doped semiconductors is discussed. ► Explicit subband bottom energies are calculated and compared to results obtained in a previous study

  19. Depletion length and space charge layer capacitance in doped semiconductor nanoshpere

    International Nuclear Information System (INIS)

    Nersesyan, S R; Petrosyan, S G

    2012-01-01

    The depletion length in a semiconductor nanosphere depends not only on the material parameters but on the nanosphere radius as well. For this reason, the depletion length does not present a universal characteristic length for all spherical interfaces. The difference from the standard flat model caused by the surface curvature is significant for a structure with the depletion length comparable to the radius of a nanosphere. We show that the depletion layer capacitance in a nanosphere becomes quite sensitive to the light intensity when, as a result of increasing optical generation rate, the surface potential barrier height is decreased and becomes very small. (paper)

  20. Optical Characterization of Rare Earth-doped Wide Band Gap Semiconductors

    National Research Council Canada - National Science Library

    Hommerich, Uwe

    1999-01-01

    ...+) PL intensity under below gap excitation. Photoluminescence excitation (PLE) studies revealed that oxygen/carbon introduces a broad below gap PLE band, which provides an efficient pathway for E(3+) excitation...

  1. Reduced Charge Transfer Exciton Recombination in Organic Semiconductor Heterojunctions by Molecular Doping

    Science.gov (United States)

    Deschler, Felix; da Como, Enrico; Limmer, Thomas; Tautz, Raphael; Godde, Tillmann; Bayer, Manfred; von Hauff, Elizabeth; Yilmaz, Seyfullah; Allard, Sybille; Scherf, Ullrich; Feldmann, Jochen

    2011-09-01

    We investigate the effect of molecular doping on the recombination of electrons and holes localized at conjugated-polymer-fullerene interfaces. We demonstrate that a low concentration of p-type dopant molecules (<4% weight) reduces the interfacial recombination via charge transfer excitons and results in a favored formation of separated carriers. This is observed by the ultrafast quenching of photoluminescence from charge transfer excitons and the increase in photoinduced polaron density by ˜70%. The results are consistent with a reduced formation of emissive charge transfer excitons, induced by state filling of tail states.

  2. Li(Zn,Co,MnAs: A bulk form diluted magnetic semiconductor with Co and Mn co-doping at Zn sites

    Directory of Open Access Journals (Sweden)

    Bijuan Chen

    2016-11-01

    Full Text Available We report the synthesis and characterization of a series of bulk forms of diluted magnetic semiconductors Li(Zn1-x-yCoxMnyAs with a crystal structure close to that of III-V diluted magnetic semiconductor (Ga,MnAs. No ferromagnetic order occurs with single (Zn,Co or (Zn, Mn substitution in the parent compound LiZnAs. Only with co-doped Co and Mn ferromagnetic ordering can occur at the Curie temperature ∼40 K. The maximum saturation moment of the this system reached to 2.17μB/Mn, which is comparable to that of Li (Zn,MnAs. It is the first time that a diluted magnetic semiconductor with co-doping Co and Mn into Zn sites is achieved in “111” LiZnAs system, which could be utilized to investigate the basic science of ferromagnetism in diluted magnetic semiconductors. In addition, ferromagnetic Li(Zn,Co,MnAs, antiferromagnetic LiMnAs, and superconducting LiFeAs share square lattice at As layers, which may enable the development of novel heterojunction devices in the future.

  3. Emission spectra from AlN and GaN doped with rare earth elements

    International Nuclear Information System (INIS)

    Choi, Sung Woo; Emura, Shuichi; Kimura, Shigeya; Kim, Moo Seong; Zhou Yikai; Teraguchi, Nobuaki; Suzuki, Akira; Yanase, Akira; Asahi, Hajime

    2006-01-01

    Luminescent properties of GaN and AlN based semiconductors containing rare earth metals of Gd and Dy are studied. Cathodoluminescent spectra from AlGdN show a clear and sharp peak at 318 nm following LO phonon satellites. Photoluminescence spectra from GaDyN by the above-gap excitation also show several peaks in addition to the broad luminescence band emission. For GaGdN, the sharp PL peaks are also observed at 650 and 670 nm, and they are assigned to the intra-f orbital transitions by their time decay measurements. The broad band at around 365 nm for AlGdN, 505 nm for GaGdN and GaDyN are commonly observed. The origin of these broad bands is discussed

  4. Evidence of dilute ferromagnetism in rare-earth doped yttrium aluminium garnet

    Energy Technology Data Exchange (ETDEWEB)

    Farr, Warrick G.; Goryachev, Maxim; Le Floch, Jean-Michel; Tobar, Michael E. [ARC Centre of Excellence for Engineered Quantum Systems, University of Western Australia, 35 Stirling Highway, Crawley, Western Australia 6009 (Australia); Bushev, Pavel [Experimentalphysik, Universität des Saarlandes, D-66123 Saarbrücken (Germany)

    2015-09-21

    This work demonstrates strong coupling regime between an erbium ion spin ensemble and microwave hybrid cavity-whispering gallery modes in a yttrium aluminium garnet dielectric crystal. Coupling strengths of 220 MHz and mode quality factors in excess of 10{sup 6} are demonstrated. Moreover, the magnetic response of high-Q modes demonstrates behaviour which is unusual for paramagnetic systems. This behaviour includes hysteresis and memory effects. Such qualitative change of the system's magnetic field response is interpreted as a phase transition of rare earth ion impurities. This phenomenon is similar to the phenomenon of dilute ferromagnetism in semiconductors. The clear temperature dependence of the phenomenon is demonstrated.

  5. Optical spectroscopy of rare earth ion-doped TiO2 nanophosphors.

    Science.gov (United States)

    Chen, Xueyuan; Luo, Wenqin

    2010-03-01

    Trivalent rare-earth (RE3+) ion-doped TiO2 nanophosphors belong to one kind of novel optical materials and have attracted increasing attention. The luminescence properties of different RE3+ ions in various TiO2 nanomaterials have been reviewed. Much attention is paid to our recent progresses on the luminescence properties of RE3+ (RE = Eu, Er, Sm, Nd) ions in anatase TiO2 nanoparticles prepared by a sol-gel-solvothermal method. Using Eu3+ as a sensitive optical probe, three significantly different luminescence centers of Eu3+ in TiO2 nanoparticles were detected by means of site-selective spectroscopy at 10 K. Based on the crystal-field (CF) splitting of Eu3+ at each site, C2v and D2 symmetries were proposed for Eu3+ incorporated at two lattice sites. A structural model for the formation of multiple sites was proposed based on the optical behaviors of Eu3+ at different sites. Similar multi-site luminescence was observed in Sm(3+)- or Nd(3+)-doped TiO2 nanoparticles. In Eu(3+)-doped TiO2 nanoparticles, only weak energy transfer from the TiO2 host to the Eu3+ ions was observed at 10 K due to the mismatch of energy between the TiO2 band-gap and the Eu3+ excited states. On the contrary, efficient host-sensitized luminescences were realized in Sm(3+)- or Nd(3+)-doped anatase TiO2 nanoparticles due to the match of energy between TiO2 band-gap and the Sm3+ and Nd3+ excited states. The excitation spectra of both Sm(3+)- and Nd(3+)-doped samples exhibit a dominant broad peak centered at approximately 340 nm, which is associated with the band-gap of TiO2, indicating that sensitized emission is much more efficient than direct excitation of the Sm3+ and Nd3+ ions. Single lattice site emission of Er3+ in TiO2 nanocrystals can be achieved by modifying the experimental conditions. Upon excitation by a Ti: sapphire laser at 978 nm, intense green upconverted luminescence was observed. The characteristic emission of Er3+ ions was obtained both in the ultraviolet-visible (UV-vis) and

  6. Production and characterization of phosphorescent nanopowders doped with rare earth ions

    International Nuclear Information System (INIS)

    Montes, Paulo Jorge Ribeiro

    2009-01-01

    In this work the feasibility of employing the synthesis process using a methodology developed by Macedo and Sasaki (Macedo, M. A. e Sasaki, J. M. Fabrication process nano particulate powders. INPI 0203876-5 1998) to produce pore and rare earths doped ceramic nano powders of SrAl 2 O 4 and Ca 12 Al 14 O 33 was investigated. In this new methodology, coconut water is used as a start solvent for the production of the samples. Thermal analysis techniques were employed in order to obtain the best calcination conditions. The structural and microstructural characterizations of the samples were made using powder X-ray diffraction and Atomic Force Microscopy techniques. The analysis by X-ray diffraction showed the formation of the SrAl 2 O 4 and Ca 12 Al 14 O 33 phases in the calcined powders. The emission/excitation spectra exhibited the typical transitions of the rare earth elements indicating the incorporation of the dopant in the nano crystals. Emission characteristics of divalent europium show that the reduction of Eu ions is induced during the synthesis stage. The doped samples show an intense bright emission when exposed to X-rays. That emission is associated with divalent europium transitions, indicating that irradiation also induces the reduction of the valence state of Eu ions from Eu 3+ to Eu 2+ . Radioluminescence spectra (RL) versus time show a decay of the RL intensity to 40% of the initial intensity after 20 minutes of exposure to X-rays. Irradiation also causes a change in color of the samples indicating the production of radiation damage. Analysis of the results of X-ray spectroscopy (XAS- X-ray Absorption Spectroscopy) and the luminescent emission of samples excited by X-rays (XEOL - X-ray Excited Optical Luminescence) enabled the creation of a model that explains that behavior. DXAS technique (Dispersive X-ray Absorption Spectroscopy) was used to monitor the kinetics of the reduction process of Eu ions during irradiation, in order to verify the

  7. Microstructure and emission ability of rare earth oxides doped molybdenum cathodes

    International Nuclear Information System (INIS)

    Yang Jiancan; Nie Zuoren; Wang Yiman

    2003-01-01

    We adopted high-resolution transmission electron microscopy (TEM) and scanning electron microscopy (SAM) to observe and analyze the microstructure of rare earth oxide (La 2 O 3 , Sc 2 O 3 ) doped molybdenum cathodes. The results show that there are many nanometer particles in the molybdenum matrix besides some sub-micrometer particles in the crystal interfaces. All these particles are rare earth oxides as determined through calculating the electron diffraction pattern. Then we determined the electron work function and the zero-field emission current of molybdenum cathodes by the electron emission measurement. To correlate the emission data with surface composition, we use Auger electron spectroscopy (AES) to analyze the elements on the activated cathode surface and their depth profiles. We found that there were about 20 nm thick layers on an activated cathode surface, which have a high content of rare earth elements. We also use AES to analyze the elements diffusion to the cathode surface from cathode body during heating up to its operating temperature to find out which element positively affects the electron emission

  8. Spectroscopic studies of copper doped alkaline earth lead zinc phosphate glasses

    Energy Technology Data Exchange (ETDEWEB)

    Sastry, S. Sreehari, E-mail: sreeharisastry@yahoo.com [Department of Physics, Acharya Nagarjuna University, Nagarjunanagar 522510 (India); Rao, B. Rupa Venkateswara [Department of Physics, Acharya Nagarjuna University, Nagarjunanagar 522510 (India); Department of Physics, V.R. Siddhartha Engineering College, Vijayawada 52007 (India)

    2014-02-01

    In this paper spectroscopic investigation of Cu{sup 2+} doped alkaline earth lead zinc phosphate glasses was done through the spectroscopic techniques like X-ray diffraction, Ultra Violet (UV) absorption Spectroscopy, Electron Paramagnetic Resonance (EPR – X band), Fourier Transform Infra Red (FTIR) and Raman Spectroscopy. Alkaline earth lead zinc phosphate glasses containing 0.1% copper oxide (CuO) were prepared by the melt quenching technique. Spectroscopic studies indicated that there is a greater possibility for the copper ions to exist in Cu{sup 2+} state in these glasses. The optical absorption spectra indicated that the absorption peak of Cu{sup 2+} is a function of composition. The maxima absorption peak was reported at 862 nm for strontium lead zinc phosphate glass. Bonding parameters were calculated for the optical and EPR data. All these spectral results indicated clearly that there are certain structural changes in the present glass system with different alkaline earth contents. The IR and Raman spectra noticed the breaking of the P–O–P bonds and creating more number of new P–O–Cu bonds.

  9. Spectroscopic studies of copper doped alkaline earth lead zinc phosphate glasses

    International Nuclear Information System (INIS)

    Sastry, S. Sreehari; Rao, B. Rupa Venkateswara

    2014-01-01

    In this paper spectroscopic investigation of Cu 2+ doped alkaline earth lead zinc phosphate glasses was done through the spectroscopic techniques like X-ray diffraction, Ultra Violet (UV) absorption Spectroscopy, Electron Paramagnetic Resonance (EPR – X band), Fourier Transform Infra Red (FTIR) and Raman Spectroscopy. Alkaline earth lead zinc phosphate glasses containing 0.1% copper oxide (CuO) were prepared by the melt quenching technique. Spectroscopic studies indicated that there is a greater possibility for the copper ions to exist in Cu 2+ state in these glasses. The optical absorption spectra indicated that the absorption peak of Cu 2+ is a function of composition. The maxima absorption peak was reported at 862 nm for strontium lead zinc phosphate glass. Bonding parameters were calculated for the optical and EPR data. All these spectral results indicated clearly that there are certain structural changes in the present glass system with different alkaline earth contents. The IR and Raman spectra noticed the breaking of the P–O–P bonds and creating more number of new P–O–Cu bonds

  10. Electronic structure of chromium-doped lead telluride-based diluted magnetic semiconductors

    International Nuclear Information System (INIS)

    Skipetrov, E.P.; Pichugin, N.A.; Slyn'ko, E.I.; Slyn'ko, V.E.

    2011-01-01

    The crystal structure, composition, galvanomagnetic and oscillatory properties of the Pb 1-x-y Sn x Cr y Te (x = 0, 0.05-0.30, y ≤ 0.01) alloys have been investigated with varying matrix composition and chromium impurity concentration. It is shown that the chromium impurity atoms dissolve in the crystal lattice at least up to 1 mol.%. The following increase of the chromium concentration leads to the appearance of microscopic regions enriched with chromium and inclusions of Cr-Te compounds. A decrease of the hole concentration, a p-n-conversion of the conductivity type and a pinning of the Fermi level by the chromium resonant level are observed with increasing chromium content. Initial rates of changes in the free carrier concentration on doping are determined. The dependences of electron concentration and Fermi level on tin content are calculated by the two-band Kane dispersion relation. A diagram of electronic structure rearrangement for the chromium-doped alloys with varying the matrix composition is proposed.

  11. Ab initio calculations of half-metallic ferromagnetism in Cr-doped MgSe and MgTe semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Noor, N.A. [Department of Physics, University of the Punjab, Quaid-e-Azam Campus, 54590 Lahore (Pakistan); Alay-e-Abbas, S.M. [Department of Physics, University of Sargodha, Sargodha 40100 (Pakistan); Department of Physics, GC University Faisalabad, Allama Iqbal Road, Faisalabad 38000 (Pakistan); Sohaib, M.U. [Lahore Development Authority, 54590 Lahore (Pakistan); Ghulam Abbas, S.M. [Department of Chemistry, University of Agriculture, Faisalabad 38040 (Pakistan); Shaukat, A., E-mail: schaukat@gmail.com [Department of Physics, University of Sargodha, Sargodha 40100 (Pakistan)

    2015-01-15

    The full-potential linear-augmented-plane-waves plus local-orbitals (FP-LAPW+lo) method has been employed for investigation of half-metallic ferromagnetism in Cr-doped ordered zinc-blende MgSe and MgTe semiconductors. Calculations of exchange and correlation (XC) effects have been carried out using generalized gradient approximation (GGA) and orbital independent modified Becke–Johnson potential coupled with local (spin) density approximation (mBJLDA). The thermodynamic stability of the compounds and their preferred magnetic orders have been analyzed in terms of the heat of formation and minimum total energy difference in ferromagnetic (FM) and anti-ferromagnetic (AFM) ordering, respectively. Calculated electronic properties reveal that the Cr-doping induces ferromagnetism in MgSe and MgTe which gives rise to a half-metallic (HM) gap at Fermi level (E{sub F}). Further, the electronic band structure is discussed in terms of s (p)–d exchange constants that are consistent with typical magneto-optical experiment and the behavior of charge spin densities is presented for understanding the bonding nature. Our results demonstrate that the higher effective potential for the spin-down case is responsible for p–d exchange splitting. Total magnetic moment (mainly due to Cr-d states) of these compounds is 4µ{sub B}. Importantly, the electronic properties and HM gap obtained using mBJLDA show remarkable improvement as compared to the results obtained using standard GGA functional. - Highlights: • Spin effect theoretical study on Cr-doped MgSe and MgTe is performed. • Half-metallic ferromagnetism in Cr{sub x}Mg{sub 1−x}Se and Cr{sub x}Mg{sub 1−x}Te is established. • Results of WC-GGA and mBJLDA are compared for performance. • HM gaps for Cr{sub x}Mg{sub 1−x}Se and Cr{sub x}Mg{sub 1−x}Te show nonlinear variation with x. • Important values of exchange splitting/constants and moments are reported.

  12. Single-mode regime in large-mode-area rare-earth-doped rod-type PCFs

    DEFF Research Database (Denmark)

    Poli, F.; Cucinotta, A.; Passaro, D.

    2009-01-01

    In this paper, large-mode-area, double-cladding, rare-earth-doped photonic crystal fibers are investigated in order to understand how the refractive index distribution and the mode competition given by the amplification can assure single-mode propagation. Fibers with different core diameters, i...

  13. Rare-earth-ion doped KY(WO4)2 optical waveguides grown by liquid-phase epitaxy

    NARCIS (Netherlands)

    Romanyuk, Y.E.; Apostolopoulos, V.; Utke, U.; Pollnau, Markus

    High-quality KY(WO4)2 thin layers doped with rare-earth-ions were grown using liquid-phase epitaxy. A low-temperature mixture of chlorides was used as the flux and undoped KY(WO4)2 crystals as substrates. The crystalline layers possessed thicknesses up to 10 µm. Passive and active planar waveguiding

  14. Low-temperature liquid phase epitaxy of rare-earth-ion doped KY(WO4)2 thin layers

    NARCIS (Netherlands)

    Romanyuk, Y.E.; Utke, I.; Ehrentraut, D.; Pollnau, Markus; Garcia-Revilla, S.; Valiente, R.; Kuleshov, N.V.

    2004-01-01

    Rare-earth-ion doped KY(WO4)2 (hereafter KYW) is a promising material for novel solid-state lasers. Low laser threshold, high efficiency, high output powers, and third-order nonlinear effects have stimulated research towards miniaturized thin-film waveguide lasers and amplifiers for future photonic

  15. Luminescence and structural properties of RbGdS.sub.2./sub. compounds doped by rare earth elements

    Czech Academy of Sciences Publication Activity Database

    Jarý, Vítězslav; Havlák, Lubomír; Bárta, J.; Mihóková, Eva; Nikl, Martin

    2013-01-01

    Roč. 35, č. 6 (2013), s. 1226-1229 ISSN 0925-3467 R&D Projects: GA TA ČR TA01011017 Institutional support: RVO:68378271 Keywords : luminescence * X-ray diffraction * crystal structure * optical materials * ternary sulfides * rare earth s doping Subject RIV: BH - Optics, Masers, Lasers Impact factor: 2.075, year: 2013

  16. TL process in europium doped alkaline earth sulphate phosphors- a review

    International Nuclear Information System (INIS)

    Bhatt, B.C.

    2003-01-01

    CaSO 4 doped with the rare earth (RE) ion dysprosium or thulium is used routinely as a thermoluminescent dosimeter (TLD) to monitor personal exposure to x- and γ-radiation. The CaSO 4 :Eu phosphor is potentially important for radio photoluminescence (RPL) and ultraviolet (UV) dosimetry. Eu 3+ → Eu 2+ conversion is suggested to play a pivotal role in UV and γ-ray induced thermoluminescence. However, there is disagreement among different workers on the mechanism of gamma and UV induced TL in this phosphor system. This paper will review the work reported on CaSO 4 :Eu and make effects to project overall picture on this phosphor system. (author)

  17. Growth of rare-earth doped single crystal yttrium aluminum garnet fibers

    Science.gov (United States)

    Bera, Subhabrata; Nie, Craig D.; Harrington, James A.; Cheng, Long; Rand, Stephen C.; Li, Yuan; Johnson, Eric G.

    2018-02-01

    Rare-earth doped single crystal (SC) yttrium aluminum garnet (YAG) fibers have great potential as high-power laser gain media. SC fibers combine the superior material properties of crystals with the advantages of a fiber geometry. Improving processing techniques, growth of low-loss YAG SC fibers have been reported. A low-cost technique that allows for the growth of optical quality Ho:YAG single crystal (SC) fibers with different dopant concentrations have been developed and discussed. This technique is a low-cost sol-gel based method which offers greater flexibility in terms of dopant concentration. Self-segregation of Nd ions in YAG SC fibers have been observed. Such a phenomenon can be utilized to fabricate monolithic SC fibers with graded index.

  18. Synthesis, Characterization and Comparative Luminescence Studies of Rare-Earth-Doped Gd2O3 Nanoparticles

    Science.gov (United States)

    Pyngrope, D.; Singh, L. R.; Prasad, A. I.; Bora, A.

    2018-04-01

    A facile direct precipitation method was used for the synthesis of luminescence nanomaterial. Gd2O3 doped with rare earth element Eu3+ is synthesized by polyol route. The synthesized nanoparticles show their characteristic red emission. The nanoparticles are characterized by x-ray diffractometer (XRD), Fourier transform infrared spectroscopy (FTIR), transmission electron microscopy (TEM) and photoluminescence (PL) study. The synthesized nanoparticles are spherical particles with 30 nm size. The photoluminescence studies show the characteristic Eu3+ red emission. The PL study shows the intensity of the magnetic dipole transition ( 5 D0 \\to 7 F1 ) at 592 nm compared to that of the electronic dipole transition ( 5 D0 \\to 7 F2 ) at 615 nm. The nanomaterials can show significant application in various display devices and biomedical applications for tracking.

  19. In vivo demonstration of enhanced radiotherapy using rare earth doped titania nanoparticles.

    Science.gov (United States)

    Townley, Helen E; Kim, Jeewon; Dobson, Peter J

    2012-08-21

    Radiation therapy is often limited by damage to healthy tissue and associated side-effects; restricting radiation to ineffective doses. Preferential incorporation of materials into tumour tissue can enhance the effect of radiation. Titania has precedent for use in photodynamic therapy (PDT), generating reactive oxygen species (ROS) upon photoexcitation, but is limited by the penetration depth of UV light. Optimization of a nanomaterial for interaction with X-rays could be used for deep tumour treatment. As such, titania nanoparticles were doped with gadolinium to optimize the localized energy absorption from a conventional medical X-ray, and further optimized by the addition of other rare earth (RE) elements. These elements were selected due to their large X-ray photon interaction cross-section, and potential for integration into the titania crystal structure. Specific activation of the nanoparticles by X-ray can result in generation of ROS leading to cell death in a tumour-localized manner. We show here that intratumoural injection of RE doped titania nanoparticles can enhance the efficacy of radiotherapy in vivo.

  20. Nano crystals of Ni doped Zn O semiconductor by Sol-Gel combustion method

    Energy Technology Data Exchange (ETDEWEB)

    Carrero, A.; Sagredo, V. [Universidad de Los Andes, Departamento de Fisica, Laboratorio de Magnetismo, 5101 Merida (Venezuela, Bolivarian Republic of); Larionova, J., E-mail: aneelyc@gmail.com [Universite Montpellier II, 2 Place Eugene Bataillon, 34090 Montpellier (France)

    2016-11-01

    Nanoparticles of the system Zn{sub 0.95}O were prepared by sol-gel self - combustion method and a study of their structural, optical and magnetic properties were conducted. X-ray diffraction study shows a hexagonal wurtzite structure for the nano compound. The formation of the wurtzite structure in Ni doped Zn O was further confirmed by Fourier transform infra-red spectrometry. Transmission electron microscopy revealed an average size of 31 nm for the particles. Optical absorption spectra shows that the band energy of Zn{sub 0.95}Ni{sub 0.}9{sub 5}O powders is about 2.54 eV at room temperature. A study of the magnetic properties of the nano powders of Zn O: Ni, reveals paramagnetic behavior, with interaction ferromagnetic between particles. (Author)

  1. "Doping" pentacene with sp(2)-phosphorus atoms: towards high performance ambipolar semiconductors.

    Science.gov (United States)

    Long, Guankui; Yang, Xuan; Chen, Wangqiao; Zhang, Mingtao; Zhao, Yang; Chen, Yongsheng; Zhang, Qichun

    2016-01-28

    Recent research progress in black phosphorus sheets strongly encourages us to employ pentacene as a parent system to systematically investigate how the "doping" of sp(2)-phosphorus atoms onto the backbone of pentacene influences its optical and charge transport properties. Our theoretical investigations proved that increasing the contribution of the pz atomic orbital of the sp(2)-phosphorus to the frontier molecular orbital of phosphapentacenes could significantly decrease both hole and electron reorganization energies and dramatically red-shift the absorption of pentacene. The record smallest hole and electron reorganization energies of 69.80 and 95.74 meV for heteropentacene derivatives were obtained. These results suggest that phosphapentacenes (or phosphaacenes) could be potential promising candidates to achieve both higher and balanced mobilities in organic field effect transistors and realize a better power conversion efficiency in organic photovoltaics.

  2. Synthesis and characterization of three-dimensional transition metal ions doped zinc oxide based dilute magnetic semiconductor thin films

    Science.gov (United States)

    Samanta, Kousik

    Dilute magnetic semiconductors (DMS), especially 3d-transition metal (TM) doped ZnO based DMS materials are the most promising candidates for optoelectronics and spintronics applications; e.g. in spin light emitting diode (SLED), spin transistors, and spin field effect transistors (SFET), etc. In the present dissertation, thin films of Zn1-xTMxO (TM = Co2+, Cu2+, and Mn2+) were grown on (0001) oriented Al2O3 substrates by pulsed laser deposition (PLD) technique. The films were highly c-axis oriented, nearly single crystalline, and defects free for a limited concentration of the dilution of transition metal ions. In particular, we have obtained single crystalline phases of Zn1-xTMxO thin films for up to 10, 3, and 5 stoichiometric percentages of Co2+, Cu2+, and Mn2+ respectively. Raman micro-probe system was used to understand the structural and lattice dynamical properties at different physical conditions. The confinement of optical phonons in the disorder lattice was explained by alloy potential fluctuation (APF) using a spatial correlation (SC) model. The detailed analysis of the optical phonon behavior in disorder lattice confirmed the substitution of the transition metal ions in Zn 2+ site of the ZnO host lattice. The secondary phases of ZnCo 2O4, CuO, and ZnMn2O4 were detected in higher Co, Cu, and Mn doped ZnO thin films respectively; where as, XRD did not detect these secondary phases in the same samples. Room temperature ferromagnetism was observed in Co2+ and Cu2+ ions doped ZnO thin films with maximum saturation magnetization (Ms) of 1.0 and 0.76 muB respectively. The origin of the observed ferromagnetism in Zn1-xCoxO thin films was tested by the controlled introduction of shallow donors (Al) in Zn0.9-x Co0.1O:Alx (x = 0.005 and 0.01) thin films. The saturation magnetization for the 10% Co-doped ZnO (1.0 muB /Co) at 300K reduced (˜0.25 muB/Co) due to Al doping. The observed ferromagnetism and the reduction due to Al doping can be explained by the Bound

  3. Fermi-edge exciton-polaritons in doped semiconductor microcavities with finite hole mass

    Science.gov (United States)

    Pimenov, Dimitri; von Delft, Jan; Glazman, Leonid; Goldstein, Moshe

    2017-10-01

    The coupling between a 2D semiconductor quantum well and an optical cavity gives rise to combined light-matter excitations, the exciton-polaritons. These were usually measured when the conduction band is empty, making the single polariton physics a simple single-body problem. The situation is dramatically different in the presence of a finite conduction-band population, where the creation or annihilation of a single exciton involves a many-body shakeup of the Fermi sea. Recent experiments in this regime revealed a strong modification of the exciton-polariton spectrum. Previous theoretical studies concerned with nonzero Fermi energy mostly relied on the approximation of an immobile valence-band hole with infinite mass, which is appropriate for low-mobility samples only; for high-mobility samples, one needs to consider a mobile hole with large but finite mass. To bridge this gap, we present an analytical diagrammatic approach and tackle a model with short-ranged (screened) electron-hole interaction, studying it in two complementary regimes. We find that the finite hole mass has opposite effects on the exciton-polariton spectra in the two regimes: in the first, where the Fermi energy is much smaller than the exciton binding energy, excitonic features are enhanced by the finite mass. In the second regime, where the Fermi energy is much larger than the exciton binding energy, finite mass effects cut off the excitonic features in the polariton spectra, in qualitative agreement with recent experiments.

  4. Temperature and frequency response of conductivity in Ag2S doped chalcogenide glassy semiconductor

    Science.gov (United States)

    Ojha, Swarupa; Das, Anindya Sundar; Roy, Madhab; Bhattacharya, Sanjib

    2018-06-01

    The electric conductivity of chalcogenide glassy semiconductor xAg2S-(1-x)(0.5S-0.5Te) has been presented here as a function of temperature and frequency. Formation of different nanocrystallites has been confirmed from X-ray diffraction study. It is also noteworthy that average size of nanocrystallites decreases with the increase of dislocation density. Dc conductivity data have been interpreted using Mott's model and Greaves's model in low and high temperature regions respectively. Ac conductivity above the room temperature has been analyzed using Meyer-Neldel (MN) conduction rule. It is interestingly noted that Correlated Barrier Hopping (CBH) model is the most appropriate conduction mechanism for x = 0.35, where pairs of charge carrier are considered to hop over the potential barrier between the sites via thermal activation. To interpret experimental data for x = 0.45, modified non-overlapping small polaron tunnelling (NSPT) model is supposed to be appropriate model due to tunnelling through grain boundary. The conductivity spectra at various temperatures have been analyzed using Almond-West Formalism (power law model). Scaling of conductivity spectra reveals that electrical relaxation process of charge carriers (polaron) is temperature independent but depends upon the composition of the present chalcogenide glassy system.

  5. Simultaneous Conduction and Valence Band Quantization in Ultrashallow High-Density Doping Profiles in Semiconductors

    Science.gov (United States)

    Mazzola, F.; Wells, J. W.; Pakpour-Tabrizi, A. C.; Jackman, R. B.; Thiagarajan, B.; Hofmann, Ph.; Miwa, J. A.

    2018-01-01

    We demonstrate simultaneous quantization of conduction band (CB) and valence band (VB) states in silicon using ultrashallow, high-density, phosphorus doping profiles (so-called Si:P δ layers). We show that, in addition to the well-known quantization of CB states within the dopant plane, the confinement of VB-derived states between the subsurface P dopant layer and the Si surface gives rise to a simultaneous quantization of VB states in this narrow region. We also show that the VB quantization can be explained using a simple particle-in-a-box model, and that the number and energy separation of the quantized VB states depend on the depth of the P dopant layer beneath the Si surface. Since the quantized CB states do not show a strong dependence on the dopant depth (but rather on the dopant density), it is straightforward to exhibit control over the properties of the quantized CB and VB states independently of each other by choosing the dopant density and depth accordingly, thus offering new possibilities for engineering quantum matter.

  6. Electrical and dielectric properties of lithium manganate nanomaterials doped with rare-earth elements

    Energy Technology Data Exchange (ETDEWEB)

    Iqbal, Muhammad Javed; Ahmad, Zahoor [Department of Chemistry, Quaid-i-Azam University, Islamabad 45320 (Pakistan)

    2008-05-01

    Substituted LiR{sub x}Mn{sub 2} {sub -} {sub x}O{sub 4} (R = La{sup 3+}, Ce{sup 3+}{sub ,} Pr{sup 3+} and x = 0.00 - 0.20) nanoparticles are prepared by the sol-gel method and the consequent changes in their lattice structure, dielectric and electrical parameters are determined by XRD, ED-XRF, SEM, LCR meter bridge and dc electrical resistivity measurements. Diffraction data show that the samples are single-phase spinel materials with crystallites sizes between 21 and 38 nm. The lattice parameter, cell volume and X-ray density are found to be affected by doping the Li-manganate with the rare-earth elements. The ED-XRF analysis confirms the stoichiometric composition of the synthesized samples and SEM reveals their morphology. Calculated values of the dielectric constant ({epsilon}) and the dielectric loss (tan {delta}) decrease with the frequency of the applied field. This is attributed to Maxwell-Wagner polarization. Replacement of manganese by the rare-earth elements results in an improvement in the structural stability of the material, which is considered to be useful for enhancement of the cycleability of the compounds when used in lithium rechargeable batteries, and increases significantly the values of {epsilon} and tan {delta} (except for Ce). Lithium manganate nanomaterials with high {epsilon} and low tan {delta} may be attractive for application in memory storage devices. (author)

  7. Hole doping and pressure effects on the II-II-V-based diluted magnetic semiconductor (Ba1-xKx)(Zn1-yMny)2As2

    International Nuclear Information System (INIS)

    Sun, F.; Zhao, G. Q.; Escanhoela, C. A. Jr.

    2017-01-01

    We investigate doping- and pressure-induced changes in the electronic state of Mn 3d and As 4p orbitals in II-II-V based diluted magnetic semiconductor (Ba_1_-_x,K_x)(Zn_1_-_y,Mn_y)_2As_2 to shed light into the mechanism of indirect exchange interactions leading to high ferromagnetic ordering temperature (T_c = 230 K in optimally doped samples). A suite of x-ray spectroscopy experiments (emission, absorption and dichroism) show that the emergence, and further enhancement of ferromagnetic interactions with increased hole doping into the As 4p band is accompanied by a decrease in local 3d spin density at Mn sites. This is a result of increasing Mn 3d - As 4p hybridization with hole doping which enhances indirect exchange interactions between Mn dopants and gives rise to induced magnetic polarization in As 4p states. On the contrary, application of pressure suppresses exchange interactions. While Mn Kβ emission spectra show a weak response of 3d state to pressure, clear As 4p band broadening (hole delocalization) is observed under pressure ultimately leading to loss of ferromagnetism concomitant with a semiconductor to metal transition. The pressure response of As 4p and Mn 3d states is intimately connected with the evolution of the As-As interlayer distance and the geometry of the MnAs_4 tetrahedral units, which we probed with X-ray diffraction. Our results indicate that hole doping increases the degree of covalency between the anion (As) p states and cation (Mn) d states in the MnA_s_4 tetrahedron, a crucial ingredient to promote indirect exchange interactions between Mn dopants and high T_c ferromagnetism. As a result, the instability of ferromagnetism and semiconducting state against pressure is mainly dictated by delocalization of anion p states.

  8. Enhanced near-infrared photoacoustic imaging of silica-coated rare-earth doped nanoparticles

    Energy Technology Data Exchange (ETDEWEB)

    Sheng, Yang [Engineering Product Development, Singapore University of Technology and Design, 8 Somapah Road, Singapore 487372 (Singapore); School of Materials Science and Engineering, Changzhou University, Changzhou, Jiangsu 213164 (China); Liao, Lun-De [Institute of Biomedical Engineering and Nanomedicine, National Health Research Institutes, 35 Keyan Rd., Zhunan Town, Miaoli County 35053, Taiwan, ROC (China); Singapore Institute for Neurotechnology (SINAPSE), National University of Singapore, 28 Medical Drive, #05-COR, Singapore 117456 (Singapore); Bandla, Aishwarya [Singapore Institute for Neurotechnology (SINAPSE), National University of Singapore, 28 Medical Drive, #05-COR, Singapore 117456 (Singapore); Department of Biomedical Engineering, National University of Singapore, 21 Lower Kent Ridge Rd, Singapore 119077 (Singapore); Liu, Yu-Hang [Singapore Institute for Neurotechnology (SINAPSE), National University of Singapore, 28 Medical Drive, #05-COR, Singapore 117456 (Singapore); Department of Electrical and Computer Engineering, National University of Singapore, 21 Lower Kent Ridge Rd, Singapore 119077 (Singapore); Yuan, Jun [Singapore Institute for Neurotechnology (SINAPSE), National University of Singapore, 28 Medical Drive, #05-COR, Singapore 117456 (Singapore); Thakor, Nitish [Singapore Institute for Neurotechnology (SINAPSE), National University of Singapore, 28 Medical Drive, #05-COR, Singapore 117456 (Singapore); Department of Biomedical Engineering, National University of Singapore, 21 Lower Kent Ridge Rd, Singapore 119077 (Singapore); Department of Electrical and Computer Engineering, National University of Singapore, 21 Lower Kent Ridge Rd, Singapore 119077 (Singapore); Tan, Mei Chee, E-mail: meichee.tan@sutd.edu.sg [Engineering Product Development, Singapore University of Technology and Design, 8 Somapah Road, Singapore 487372 (Singapore)

    2017-01-01

    Near-infrared photoacoustic (PA) imaging is an emerging diagnostic technology that utilizes the tissue transparent window to achieve improved contrast and spatial resolution for deep tissue imaging. In this study, we investigated the enhancement effect of the SiO{sub 2} shell on the PA property of our core/shell rare-earth nanoparticles (REs) consisting of an active rare-earth doped core of NaYF{sub 4}:Yb,Er (REDNPs) and an undoped NaYF{sub 4} shell. We observed that the PA signal amplitude increased with SiO{sub 2} shell thickness. Although the SiO{sub 2} shell caused an observed decrease in the integrated fluorescence intensity due to the dilution effect, fluorescence quenching of the rare earth emitting ions within the REDNPs cores was successfully prevented by the undoped NaYF{sub 4} shell. Therefore, our multilayer structure consisting of an active core with successive functional layers was demonstrated to be an effective design for dual-modal fluorescence and PA imaging probes with improved PA property. The result from this work addresses a critical need for the development of dual-modal contrast agent that advances deep tissue imaging with high resolution and signal-to-noise ratio. - Graphical abstract: Illustration of multilayer structured imaging probe with REDNPs as active core, undoped NaYF{sub 4} as intermediate layer and SiO{sub 2} as outer shell. The PA signal amplitude of REs/SiO{sub 2} was increased with the SiO{sub 2} shell thickness. - Highlights: • Silica coating was demonstrated to be much more effective in enhancing the PA signal amplitude comparing to soft polymer. • PA enhancement was attributed to the increased phonon modes and phonon energy with the introduction of the SiO{sub 2} coating. • Multilayer structure was an effective design for dual-modal fluorescence and PA imaging probes with improved PA property.

  9. Fabrication of Ni-doped BiVO{sub 4} semiconductors with enhanced visible-light photocatalytic performances for wastewater treatment

    Energy Technology Data Exchange (ETDEWEB)

    Regmi, Chhabilal [Department of Environmental and Biochemical Engineering, Sun Moon University, Chungnam 31460 (Korea, Republic of); Kshetri, Yuwaraj K. [Department of Advanced Materials Engineering, Sun Moon University, Chungnam 31460 (Korea, Republic of); Kim, Tae-Ho [Division of Mechanics and ICT Convergence Engineering, Sun Moon University, Chungnam 31460 (Korea, Republic of); Pandey, Ramesh Prasad [Institute of Biomolecule Reconstruction, Department of BT-Convergent Pharmaceutical Engineering, Sun Moon University, Chungnam 31460 (Korea, Republic of); Ray, Schindra Kumar [Department of Environmental and Biochemical Engineering, Sun Moon University, Chungnam 31460 (Korea, Republic of); Lee, Soo Wohn, E-mail: swlee@sunmoon.ac.kr [Department of Environmental and Biochemical Engineering, Sun Moon University, Chungnam 31460 (Korea, Republic of)

    2017-08-15

    Highlights: • Synthesis of a Ni-doped BiVO{sub 4} semiconductor photocatalyst with reduced band gap energy. • Ni-doped BiVO{sub 4} provided efficient photocatalytic activity for ibuprofen degradation and E. coli and green tide deactivation. • DFT calculation and thermodynamic modeling to understand the underlying mechanism. - Abstract: A visible-light-driven Ni-doped BiVO{sub 4} photocatalyst was synthesized using a microwave hydrothermal method. The nominal Ni doping amount of 1 wt% provided excellent photoactivity for a variety of water pollutants, such as ibuprofen (pharmaceutical), Escherichia coli (bacteria), and green tides (phytoplankton). Each Ni-doped BiVO{sub 4} sample exhibits better performance than pure BiVO{sub 4}. The degradation of ibuprofen reaches 80% within 90 min, the deactivation of Escherichia coli reaches around 92% within 5 h, and the inactivation of green tide (Chlamydomonas pulsatilla) reaches 70% upon 60 min of the visible light irradiation. The first principle calculation and thermodynamic modeling revealed that Ni doping in the vanadium site gives the most stable configuration of the synthesized samples with the formation of an in-gap energy state and oxygen vacancies. The in-gap energy state and the oxygen vacancies serve as an electron-trapping center that decreases the migration time of the photogenerated carrier and increases the separation efficiency of electron-hole pairs, which are responsible for the observed efficient photocatalytic, anti-bacterial and anti-algal activity of the samples. These properties thus suggest potential applications of Ni-doped BiVO{sub 4} as a multifunctional material in the field of wastewater treatment.

  10. Solar Cells from Earth-Abundant Semiconductors with Plasmon-Enhanced Light Absorption

    Energy Technology Data Exchange (ETDEWEB)

    Atwater, Harry

    2012-04-30

    Progress is reported in these areas: Plasmonic Light Trapping in Thin Film a-Si Solar Cells; Plasmonic Light Trapping in Thin InGaN Quantum Well Solar Cells; and Earth Abundant Cu{sub 2}O and Zn{sub 3}P{sub 2} Solar Cells.

  11. PHYSICAL AND ELECTRICAL PROPERTIES ENHANCEMENT OF RARE-EARTH DOPED-POTASSIUM SODIUM NIOBATE (KNN: A REVIEW

    Directory of Open Access Journals (Sweden)

    Akmal Mat Harttat Maziati

    2015-06-01

    Full Text Available Alkaline niobate mainly potassium sodium niobate, (KxNa1-x NbO3 (abreviated as KNN has long attracted attention as piezoelectric materials as its high Curie temperature (Tc and piezoelectric properties. The volatility of alkaline element (K, Na is, however detrimental to the stoichiometry of KNN, contributing to the failure to achieve high-density structure and lead to the formation of intrinsic defects. By partially doping of several rare-earth elements, the inherent defects could be improved significantly. Therefore, considerable attempts have been made to develop doped-KNN based ceramic materials with high electrical properties. In this paper, these research activities are reviewed, including dopants type and doping role in KNN perovskite structure.

  12. Modifying the size and uniformity of upconversion Yb/Er:NaGdF4 nanocrystals through alkaline-earth doping.

    Science.gov (United States)

    Lei, Lei; Chen, Daqin; Huang, Ping; Xu, Ju; Zhang, Rui; Wang, Yuansheng

    2013-11-21

    NaGdF4 is regarded as an ideal upconversion (UC) host material for lanthanide (Ln(3+)) activators because of its unique crystal structure, high Ln(3+) solubility, low phonon energy and high photochemical stability, and Ln(3+)-doped NaGdF4 UC nanocrystals (NCs) have been widely investigated as bio-imaging and magnetic resonance imaging agents recently. To realize their practical applications, controlling the size and uniformity of the monodisperse Ln(3+)-doped NaGdF4 UC NCs is highly desired. Unlike the routine routes by finely adjusting the multiple experimental parameters, herein we provide a facile and straightforward strategy to modify the size and uniformity of NaGdF4 NCs via alkaline-earth doping for the first time. With the increase of alkaline-earth doping content, the size of NaGdF4 NCs increases gradually, while the size-uniformity is still retained. We attribute this "focusing" of size distribution to the diffusion controlled growth of NaGdF4 NCs induced by alkaline-earth doping. Importantly, adopting the Ca(2+)-doped Yb/Er:NaGdF4 NCs as cores, the complete Ca/Yb/Er:NaGdF4@NaYF4 core-shell particles with excellent size-uniformity can be easily achieved. However, when taking the Yb/Er:NaGdF4 NCs without Ca(2+) doping as cores, they could not be perfectly covered by NaYF4 shells, and the obtained products are non-uniform in size. As a result, the UC emission intensity of the complete core-shell NCs increases by about 30 times in comparison with that of the cores, owing to the effective surface passivation of the Ca(2+)-doped cores and therefore protection of Er(3+) in the cores from the non-radiative decay caused by surface defects, whereas the UC intensity of the incomplete core-shell NCs is enhanced by only 3 times.

  13. Mechanically induced strong red emission in samarium ions doped piezoelectric semiconductor CaZnOS for dynamic pressure sensing and imaging

    Science.gov (United States)

    Wang, Wei; Peng, Dengfeng; Zhang, Hanlu; Yang, Xiaohong; Pan, Caofeng

    2017-07-01

    Piezoelectric semiconductor with optical, electrical and mechanical multifunctions has great potential applications in future optoelectronic devices. The rich properties and applications mainly encompass the intrinsic structures and their coupling effects. Here, we report that lanthanide ions doped piezoelectric semiconductor CaZnOS:Sm3+ showing strong red emission induced by dynamic mechanical stress. Under moderate mechanical load, the doped piezoelectric semiconductor exhibits strong visible red emission to the naked eyes even under the day light. A flexible dynamic pressure sensor device is fabricated based on the prepared CaZnOS:Sm3+ powders. The mechanical-induced emission properties of the device are investigated by the optical fiber spectrometer. The linear characteristic emissions are attributed to the 4G5/2→6H5/2 (566 nm), 4G5/2→6H7/2 (580-632 nm), 4G5/2→6H9/2 (653-673 nm) and 4G5/2→6H11/2 (712-735 nm) f-f transitions of Sm3+ ions. The integral emission intensity is proportional to the value of applied pressure. By using the linear relationship between integrated emission intensity and the dynamic pressure, the real-time pressure distribution is visualized and recorded. Our results highlight that the incorporation of lanthanide luminescent ions into piezoelectric semiconductors as smart materials could be applied into the flexible mechanical-optical sensor device without additional auxiliary power, which has great potential for promising applications such as mapping of personalized handwriting, smart display, and human machine interface.

  14. Influence of rare earth (Nd{sup +3}) doping on structural and magnetic properties of nanocrystalline manganese-zinc ferrite

    Energy Technology Data Exchange (ETDEWEB)

    Naik, Pranav P., E-mail: drppn1987@gmail.com [Department of Physics, Goa University, Taleigao Plateau, Goa, 403206 (India); Tangsali, R.B. [Department of Physics, Goa University, Taleigao Plateau, Goa, 403206 (India); Meena, S.S.; Yusuf, S.M. [Solid State Physics Division, Bhabha Atomic Research Centre, Mumbai, 400085 (India)

    2017-04-15

    Ultrafine nanopowders of Mn{sub 0.6}Zn{sub 0.4}Fe{sub 2-x}Nd{sub x}O{sub 4} (x = 0, 0.04, 0.06, 0.08, and 0.1) were prepared using combustion method. The influence of Nd{sup +3} doping on structural parameters, morphological characteristics and magnetic properties were investigated. Formation of pure spinel phase was confirmed using X-ray powder diffraction (XRPD). Nd{sup +3} doping in Mn-Zn ferrite samples have shown remarkable influence on all the properties that were under investigation. An increase in lattice constant commensurate with increasing Nd{sup +3} concentrations was observed in the samples. The crystallite size calculated from XRPD data and grain size observed from Transmission Electron Microscope showed a proportionate decrement with increment in rare earth doping. An increase in mass density, X-ray density, particle strain and decrease in porosity were the other effects noticed on the samples as a result of Nd{sup +3} doping. The corresponding tetrahedral, octahedral bond lengths and bond angles estimated from XRPD data have also shown substantial influence of the Nd{sup +3} doping. Magnetic parameters namely saturation magnetization (M{sub S}) and net magnetic moment η{sub B}, estimated using vibrating sample magnetometer (VSM) were found to depend on the Nd{sup +3} doping. Mössbauer spectroscopy was employed to study the magnetic environment of Mössbauer active ions and detection of superparamagnetic behavior in nanocrystalline rare earth ferrite material. The isomer shift values obtained from Mössbauer spectra indicate the presence of Fe{sup +3} ions at tetrahedral site (A-site) and octahedral site (B-site), respectively. - Highlights: • Synthesis of Nd doped Mn-Zn ferrite nanoparticles using combustion method. • Successful doping of Nd{sup +3} at octahedral site in ferrite structure. • Existence of Fe{sup +3} oxidation state at both A-Site and B-site. • Enhanced saturation magnetization due to altered cation distribution by Nd doping

  15. Correlation between electronic structure and energy band in Eu-doped CuInTe2 semiconductor compound with chalcopyrite structure

    Institute of Scientific and Technical Information of China (English)

    Tai Wang; Yong-Quan Guo; Shuai Li

    2017-01-01

    The Eu-doped Cu(In,Eu)Te2 semiconductors with chalcopyrite structures are promising materials for their applications in the absorption layer for thin-film solar cells due to their wider band-gaps and better optical properties than those of CulnTe2.In this paper,the Eu-doped CulnTe2 (Culn1-xEuxTe2,x =0,0.1,0.2,0.3) are studied systemically based on the empirical electron theory (EET).The studies cover crystal structures,bonding regularities,cohesive energies,energy levels,and valence electron structures.The theoretical values fit the experimental results very well.The physical mechanism of a broadened band-gap induced by Eu doping into CuInTe2 is the transitions between different hybridization energy levels induced by electron hopping between s and d orbitals and the transformations from the lattice electrons to valence electrons for Cu and In ions.The research results reveal that the photovoltaic effect induces the increase of lattice electrons of In and causes the electric resistivity to decrease.The Eu doping into CuInTe2 mainly influences the transition between different hybridization energy levels for Cu atoms,which shows that the 3d electron numbers of Cu atoms change before and after Eu doping.In single phase CuIn1-xEuxTe2,the number of valence electrons changes regularly with increasing Eu content,and the calculated band gap Eg also increases,which implies that the optical properties of Eu-doped CuIn1-xEuxTe2 are improved.

  16. Magnetic semiconductors for spinelectronics. Europium sulfide and magnetically doped gallium nitride; Magnetische Halbleiter zum Einsatz in der Spinelektronik. Europiumsulfid und magnetisch dotiertes Galliumnitrid

    Energy Technology Data Exchange (ETDEWEB)

    Keller, J.

    2007-07-02

    In this work, magnetic semiconductors were investigated. As ferromagnetic compound semiconductor, EuS was investigated as thin film system. Particular attention was paid to the influence of the substrate temperature during growth on the sample properties. The samples grown and investigated here show an anomalous Hall effect. As diluted magnetic semiconductors (DMS), GaN films magnetically doped with Mn or Gd were investigated. In both material systems, ferromagnetism far above room temperature was demonstrated.While GaGdN shows a homogeneous magnetism, all ferromagnetic GaMnN samples show small clusters (phase separations). In addition, measurements of the optical absorption and the magnetic circular dichroism (MCD) were performed on the GaMnN samples. In the optical measurements, the Mn was identified as deep acceptor. At low temperatures, both the magneto-absorption and the MCD show a Zeeman-shift of an absorption band for all doping levels. The exchange energies between valence band and localized magnetic moments can be extracted from fits of the Brillouin function to the Zeeman shifts. This yields values between 1.4 eV and 1.7 eV for the lowest doping levels and between 1.7 eV and 2.1 eV for the highest doped sample. At low temperatures, no ferromagnetic behavior was found in the magneto-optical experiments. The signal is dominated by the localized Mn spin system. At room temperature, the MCD shows a ferromagnetic signature. At elevated temperatures, the signal from the Mn spin system is small enough that the influence of the clusters on the band structure of the host lattice becomes visible. Contrary to the GaMnN samples, the GaGdN films show a homogeneous magnetism. The magnetically doped GaN thin film systems investigated here exhibit different behavior. The exchange mechanism proposed for GaGdN leads to a homogeneous ferromagnetism and is similar to the magnetic exchange in the Eu chalcogenides. The interplay between this intra-atomic f-d exchange and the

  17. NMR and NQR study of Si-doped (6,0) zigzag single-walled aluminum nitride nanotube as n or P-semiconductors.

    Science.gov (United States)

    Baei, Mohammad T; Peyghan, Ali Ahmadi; Tavakoli, Khadijeh; Babaheydari, Ali Kazemi; Moghimi, Masoumeh

    2012-09-01

    Density functional theory (DFT) calculations were performed to investigate the electronic structure properties of pristine and Si-doped aluminum nitride nanotubes as n or P-semiconductors at the B3LYP/6-31G* level of theory in order to evaluate the influence of Si-doped in the (6,0) zigzag AlNNTs. We extended the DFT calculation to predict the electronic structure properties of Si-doped aluminum nitride nanotubes, which are very important for production of solid-state devices and other applications. To this aim, pristine and Si-doped AlNNT structures in two models (Si(N) and Si(Al)) were optimized, and then the electronic properties, the isotropic (CS(I)) and anisotropic (CS(A)) chemical shielding parameters for the sites of various (27)Al and (14)N atoms, NQR parameters for the sites of various of (27)Al and (14)N atoms, and quantum molecular descriptors were calculated in the optimized structures. The optimized structures, the electronic properties, NMR and NQR parameters, and quantum molecular descriptors for the Si(N) and Si(Al) models show that the Si(N) model is a more reactive material than the pristine or Si(Al) model.

  18. Photo- and electro-luminescence of rare earth doped ZnO electroluminors at liquid nitrogen temperature

    International Nuclear Information System (INIS)

    Bhushan, S.; Kaza, B.R.; Pandey, A.N.

    1981-01-01

    Photo (PL) and electroluminescent (EL) spectra of some rare earth (La, Gd, Er or Dy) doped ZnO electroluminors have been investigated at liquid nitrogen temperature (LNT) and compared with their corresponding results at room temperature (RT). In addition to three bands observed at RT, one more band on the higher wavelength side appears in EL spectra. Spectral shift with the exciting intensity at LNT supports the donor-acceptor (DA) model in which the rare earths form the donor levels. From the temperature dependent studies of PL and EL brightness, the EL phenomenon is found to be more susceptible to traps. (author)

  19. Doping dependent room-temperature ferromagnetism and structural properties of dilute magnetic semiconductor ZnO:Cu2+ nanorods

    International Nuclear Information System (INIS)

    Sharma, Prashant K.; Dutta, Ranu K.; Pandey, Avinash C.

    2009-01-01

    Copper doped ZnO nanoparticles were synthesized by the chemical technique based on the hydrothermal method. The crystallite structure, morphology and size were determined by X-ray diffraction (XRD), high resolution transmission electron microscopy (HRTEM) and scanning electron microscopy (SEM) for different doping percentages of Cu 2+ (1-10%). TEM/SEM images showed formation of uniform nanorods, the aspect ratio of which varied with doping percentage of Cu 2+ . The wurtzite structure of ZnO gradually degrades with the increasing Cu 2+ doping concentration and an additional CuO associated diffraction peak was observed above 8% of Cu 2+ doping. The change in magnetic behavior of the nanoparticles of ZnO with varying Cu 2+ doping concentrations was investigated using a vibrating sample magnetometer (VSM). Initially these nanoparticles showed strong room-temperature ferromagnetic behavior, however at higher doping percentage of copper the ferromagnetic behavior was suppressed and paramagnetic nature was enhanced.

  20. First-principles calculation on oxygen ion migration in alkaline-earth doped La2GeO5

    International Nuclear Information System (INIS)

    Thuy Linh, Tran Phan; Sakaue, Mamoru; Aspera, Susan Meñez; Alaydrus, Musa; Wungu, Triati Dewi Kencana; Hoang Linh, Nguyen; Kasai, Hideaki; Mohri, Takahiro; Ishihara, Tatsumi

    2014-01-01

    By using first-principles calculations based on the density functional theory, we investigated the doping effects of alkaline-earth metals (Ba, Sr and Ca) in monoclinic lanthanum germanate La 2 GeO 5 on its oxygen ion conduction. Although the lattice parameters of the doped systems changed due to the ionic radii mismatch, the crystal structures remained monoclinic. The contribution of each atomic orbital to electronic densities of states was evaluated from the partial densities of states and partial charge densities. It was confirmed that the materials behaved as ionic crystals comprising of cations of La and dopants and anions of oxygen and covalently formed GeO 4 . The doping effect on the activation barrier for oxygen hopping to the most stable oxygen vacancy site was investigated by the climbing-image nudged elastic band method. By tracing the charge density change during the hopping, it was confirmed that the oxygen motion is governed by covalent interactions. The obtained activation barriers showed excellent quantitative agreements with an experiment for the Ca- and Sr-doped systems in low temperatures as well as the qualitative trend, including the Ba-doped system. (paper)

  1. Structures, stabilities, and electronic properties for rare-earth lanthanum doped gold clusters

    International Nuclear Information System (INIS)

    Zhao, Ya-Ru

    2015-01-01

    The structures, stabilities, and electronic properties of rare-earth lanthanum doped gold La 2 Au n (n = 1-9) and pure gold Au n (n ≤ 11) clusters have been investigated by using density functional theory. The optimized geometries show that the lowest energy structures of La 2 Au n clusters favour the 3D structure at n ≥ 3. The lanthanum atoms can strongly enhance the stabilities of gold clusters and tend to occupy the most highly coordinated position. By analysing the gap, vertical ionization potential, and chemical hardness, it is found that the La 2 Au 6 isomer possesses higher stability for small-sized La 2 Au n clusters (n = 1-9). The charges in the La 2 Au n clusters transfer from La atoms to the Au n host. In addition, Wiberg bond indices analysis reveals that the intensity of different bonds of La 2 Au n clusters exhibits a sequence of La-La bond > La-Au bond > Au-Au bond.

  2. Photoluminescence properties of Er{sup 3+}-doped alkaline earth titanium phosphate glasses

    Energy Technology Data Exchange (ETDEWEB)

    Murthy, D.V.R.; Babu, A. Mohan [Department of Physics, Sri Venkateswara University, Tirupati 517 502 (India); Jamalaiah, B.C. [Department of Physics, Sree Vidyanikethan Engineering College, Tirupati, 517 102 (India); Moorthy, L. Rama, E-mail: lrmphysics@yahoo.co.i [Department of Physics, Sri Venkateswara University, Tirupati 517 502 (India); Jayasimhadri, M.; Jang, Kiwan; Lee, Ho Sueb [Department of Physics, Changwon National University, Changwon 641-773 (Korea, Republic of); Yi, Soung Soo [Department of Photonics, Silla University, Pusan 617-736 (Korea, Republic of); Jeong, Jung Hyun [Department of Physics, Pukyong National University, Pusan 608-737 (Korea, Republic of)

    2010-02-18

    Er{sup 3+}-doped alkaline earth titanium phosphate (RTP) glasses with molar composition of 24 (NaPO{sub 3}){sub 6} + 30 KH{sub 2}PO{sub 4} + 25 TiO{sub 2} + 20 RCl{sub 2} + 1 Er{sub 2}O{sub 3} were prepared by melt quenching technique. Judd-Ofelt intensity parameters ({Omega}{sub 2,4,6}) were determined from the experimental oscillator strengths (f{sub exp}) of absorption bands. From these parameters spontaneous emission probabilities (A{sub R}), luminescence branching ratios ({beta}{sub R}) and radiative lifetimes ({tau}{sub R}) have been calculated. Visible and near infrared photoluminescence spectra has been recorded by exciting the samples at 380 and 970 nm respectively. An intense broad emission band at 1.53 {mu}m was observed corresponding to {sup 4}I{sub 13/2} {yields} {sup 4}I{sub 15/2} transition. McCumber theory has been applied to determine the emission cross-sections ({sigma}{sub e}) of the {sup 4}I{sub 13/2} {yields} {sup 4}I{sub 15/2} transition using the absorption cross-sections ({sigma}{sub a}). The lifetimes of {sup 4}S{sub 3/2} level were measured for the glasses by exciting the samples at 540 nm wavelength and the quantum efficiencies were also determined.

  3. Thermal effects on light emission in Yb3+ -sensitized rare-earth doped optical glasses

    International Nuclear Information System (INIS)

    Gouveia, E.A.; Araujo, M.T. de; Gouveia-Neto, A.S.

    2001-01-01

    The temperature effect upon infrared-to-visible frequency upconversion fluorescence emission in off-resonance infrared excited Yb 3+ -sensitized rare-earth doped optical glasses is theoretically and experimentally investigated. We have examined samples of Er3+/Yb 3+ -codoped Ga 2 S 3 :La 2 O 3 chalcogenide glasses and germanosilicate optical fibers, and Ga2O3:La 2 O 3 chalcogenide and fluoroindate glasses codoped with Pr 3+ /Yb 3+ , excited off-resonance at 1.064μm. The experimental results revealed thermal induced enhancement in the visible upconversion emission intensity as the samples temperatures were increased within the range of 20 deg C to 260 deg C. The fluorescence emission enhancement is attributed to the temperature dependent multiphonon-assisted anti-Stokes excitation process of the ytterbium-sensitizer. A theoretical approach that takes into account a sensitizer temperature dependent effective absorption cross section, which depends upon the phonon occupation number in the host matrices, has proven to agree very well with the experimental data. As beneficial applications of the thermal enhancement, a temperature tunable amplifier and a fiber laser with improved power performance are presented. (author)

  4. Gamma rays shielding and sensing application of some rare earth doped lead-alumino-phosphate glasses

    Science.gov (United States)

    Kaur, Preet; Singh, Devinder; Singh, Tejbir

    2018-03-01

    Seven rare earth (Sm3+, Eu3+ and Nd3+) doped lead alumino phosphate glasses were prepared. The protective and sensing measures from gamma rays were analysed in terms of parameters viz. density (ρ), refractive index, energy band gap (Eg), mean free path (mfp), effective atomic number (Zeff) and buildup factors (energy absorption EABF as well as exposure buildup factor EBF). The energy dependent parameters (mfp, Zeff, EABF and EBF) were investigated in the energy region from 15 keV to 15 MeV. EABF and EBF values were observed to be maximum in the intermediate energy region. Besides, the EABF and EBF values for the prepared samples are shown to have strong dependence on chemical composition of the glass at lower energy, whereas, it is almost independent of chemical composition in higher energy region. The prepared glass samples are found to have potential applications in radiation shielding as well as radiation sensing, which further find numerous applications in the field of medicine and industry.

  5. Trap state passivation improved hot-carrier instability by zirconium-doping in hafnium oxide in a nanoscale n-metal-oxide semiconductor-field effect transistors with high-k/metal gate

    International Nuclear Information System (INIS)

    Liu, Hsi-Wen; Tsai, Jyun-Yu; Liu, Kuan-Ju; Lu, Ying-Hsin; Chang, Ting-Chang; Chen, Ching-En; Tseng, Tseung-Yuen; Lin, Chien-Yu; Cheng, Osbert; Huang, Cheng-Tung; Ye, Yi-Han

    2016-01-01

    This work investigates the effect on hot carrier degradation (HCD) of doping zirconium into the hafnium oxide high-k layer in the nanoscale high-k/metal gate n-channel metal-oxide-semiconductor field-effect-transistors. Previous n-metal-oxide semiconductor-field effect transistor studies demonstrated that zirconium-doped hafnium oxide reduces charge trapping and improves positive bias temperature instability. In this work, a clear reduction in HCD is observed with zirconium-doped hafnium oxide because channel hot electron (CHE) trapping in pre-existing high-k bulk defects is the main degradation mechanism. However, this reduced HCD became ineffective at ultra-low temperature, since CHE traps in the deeper bulk defects at ultra-low temperature, while zirconium-doping only passivates shallow bulk defects.

  6. Enhanced separation efficiency of photoinduced charges for antimony-doped tin oxide (Sb-SnO{sub 2})/TiO{sub 2} heterojunction semiconductors with varied Sb doping concentration

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Zhen-Long [School of Physics and Electronics, Henan University, Kaifeng 475004 (China); Ma, Wen-Hai [School of Physical Education, Henan University, Kaifeng 475004 (China); Mao, Yan-Li, E-mail: ylmao1@163.com [School of Physics and Electronics, Henan University, Kaifeng 475004 (China); Institute for Computational Materials Science, Henan University, Kaifeng 475004 (China)

    2014-09-07

    In this paper, antimony-doped tin oxide (Sb-SnO{sub 2}) nanoparticles were synthesized with varied Sb doping concentration, and the Sb-SnO{sub 2}/TiO{sub 2} heterojunction semiconductors were prepared with Sb-SnO{sub 2} and TiO{sub 2}. The separation efficiency of photoinduced charges was characterized with surface photovoltage (SPV) technique. Compared with Sb-SnO{sub 2} and TiO{sub 2}, Sb-SnO{sub 2}/TiO{sub 2} presents an enhanced separation efficiency of photoinduced charges, and the SPV enhancements were estimated to be 1.40, 1.43, and 1.99 for Sb-SnO{sub 2}/TiO{sub 2} composed of Sb-SnO{sub 2} with the Sb doping concentration of 5%, 10%, and 15%, respectively. To understand the enhancement, the band structure of Sb-SnO{sub 2} and TiO{sub 2} in the heterojunction semiconductor was determined, and the conduction band offsets (CBO) between Sb-SnO{sub 2} and TiO{sub 2} were estimated to be 0.56, 0.64, and 0.98 eV for Sb-SnO{sub 2}/TiO{sub 2} composed of Sb-SnO{sub 2} with the Sb doping concentration of 5%, 10%, and 15%, respectively. These results indicate that the separation efficiency enhancement is resulting from the energy level matching, and the increase of enhancement is due to the rising of CBO.

  7. Neutron-activation determination of the rare earths in natural calcites using a semiconductor detector

    International Nuclear Information System (INIS)

    Vaganov, N.A.; Bulnaev, A.I.; Mejer, V.A.; Ponomarev, V.S.

    1976-01-01

    The application of germanium semiconducting detector is described. The detector has an energy resolution about 1 KeV and makes it possible to determine the content of Ce, Nd, Eu, Gd, Tb, and Yb in natural calcites with high sensitivity. The region of soft γ-radiation of activated calcites is more favourable for measurements to be performed than the region of hard γ-rays. Semiconducting detectors of radiation type are relatively cheap; they can be stored at room temperature. The limit of determining rare earth elements in calcites is (g): Eu-1.5.10 -9 ; Tb-4.0.10 -9 ; Yb-7.0.10 -9 ; Ce-1.0.10 -7 ; Nd-5.0.10 -7 ; Gd-1.0.10 -6 . A relative error of concentration determination is 10-20%

  8. Upconversion in rare earth ions doped TeO2-ZnO glass

    International Nuclear Information System (INIS)

    Mohanty, Deepak Kumar; Rai, Vineet Kumar

    2012-01-01

    The Er 3+ /Yb 3+ doped/codoped TeO 2 -ZnO glasses have been fabricated by conventional melt and quenching technique. The absorption spectra of the doped/codoped glasses have been performed. The visible upconversion emissions of both doped and codoped glasses have been observed using 808 nm diode laser excitation. The process involved in upconversion emissions has been discussed in detail. (author)

  9. Progress Towards Left-Handed Electromagnetic Waves in Rare-Earth Doped Crystals

    Science.gov (United States)

    Brewer, Nicholas Riley

    In 1968 Victor Veselago determined that a material with both a negative permittivity and negative permeability would have some extraordinary properties. The index of refraction of this material would be negative and light propagating inside would be 'left-handed'. This research went relatively unnoticed until the year 2000 when John Pendry discovered that a lens with an index of refraction of n = -1 could, in principle, have infinite resolution. Since 2000, research into negative index materials has exploded. The challenging part of this research is to get a material to respond to magnetic fields at optical frequencies. Artificially created metamaterials are able to achieve this and have been the focus of most negative index research. The long term goal of our project is to produce left-handed light in an atomic system. In order to do this, an atomic transition needs to be utilized that is magnetic dipole in character. Pure magnetic dipole transitions in the optical regime are more rare and fundamentally much weaker than the electric dipole transitions typically used in atomic physics experiments. They can be found, however, in the complex atomic structure of rare-earth elements. The 7F0 → 5D 1 transition in europium doped yttrium orthosilicate (Eu3+:Y 2SiO5) has a wavelength of 527.5 nm and is a pure magnetic dipole transition. We measured its dipole moment to be (0.063 +/- 0.005)mu B via Rabi oscillations, inferring a magnetization on the order of 10 -2 A/m. Demonstrating this large magnetic response at an optical frequency is a major first step in realizing left-handed light in atomic systems.

  10. UV induced thermoluminescence in rare earth oxide doped phosphors: possible use for UV dosimetry

    International Nuclear Information System (INIS)

    Yeh, S.-M.; Su, C.-S.

    1996-01-01

    UV induced thermoluminescent (TL) phenomena in some phosphors doped with rare earth oxides (Gd 2 O 3 :Eu, Gd 2 O 3 :Tb, Gd 2 O 3 :Dy and Y 2 O 3 :EU) have been investigated. Gd 2 O 3 :Eu and Y 2 O 3 :Eu have been found to possess prominent TL phenomena. A stable high temperature glow peak has been found at 345 o C in the cubic (C type) crystalline structure of Gd 2 O 3 :Eu. A more stable high temperature glow peak has also been found at about 380 o C in Y 2 O 3 :Eu. The sensitivity is high enough to be used as UV sensors. TL phenomena in Gd 2 O 3 :Tb and Gd 2 O 3 :Dy have also been investigated, but their TL intensities are much weaker than that of Gd 2 O 3 :Eu or Y 2 O 3 :Eu. On the other hand, all glow peaks of Gd 2 O 3 :Tb and Gd 2 O 3 :Dy are unstable at room temperature, therefore, Gd 2 O 3 :Tb and Gd 2 O 3 :Dy are not suitable for use as UV detectors. According to the above properties, the C type (cubic) crystalline structure of the Gd 2 O 3 :Eu phosphor seems to possess the potential of being the TL material for UV measurement. The position of the high temperature glow peak depends on the total UV exposure. It locates at about 380 o C when this phosphor was irradiated by 302 nm UV at 2.4 mJ.cm -2 exposure, but it shifts to 345 o C at 19.2 mJ.cm -2 or higher exposure. The response curves of this phosphor for various wavelengths, e.g. 253.7 nm, 302 nm, and 365 nm, were also measured. This phosphor is sensitive enough to measure background UV radiations, such as sunlight, bulb light etc. (author)

  11. Polarization dependence of two-photon transition intensities in rare-earth doped crystals

    Energy Technology Data Exchange (ETDEWEB)

    Le Nguyen, An-Dien [Univ. of California, Berkeley, CA (United States)

    1996-05-01

    A polarization dependence technique has been developed as a tool to investigate phonon scattering (PS), electronic Raman scattering (ERS), and two-photon absorption (TPA) transition intensities in vanadate and phosphate crystals. A general theory for the polarization dependence (PD) of two-photon transition intensities has been given. Expressions for the polarization dependent behavior of two-photon transition intensities have been tabulated for the 32 crystallographic point groups. When the wavefunctions for the initial and final states of a rare-earth doped in crystals are known, explicit PD expressions with no unknown parameters can be obtained. A spectroscopic method for measuring and interpreting phonon and ERS intensities has been developed to study PrVO4, NdVO4, ErVO4, and TmVO4 crystals. Relative phonon intensities with the polarization of the incident and scattered light arbitrarily varied were accurately predicted and subsequently used for alignment and calibration in ERS measurements in these systems for the first time. Since ERS and PS intensities generally follow different polarization curves as a function of polar angles, the two can be uniquely identified by comparing their respective polarization behavior. The most crucial application of the technique in ERS spectroscopy is the establishment of a stringent test for the Axe theory. For the first time, the F1/F2 ratio extracted from the experimental fits of the ERS intensities were compared with those predicted by theories which include both the second- and third-order contributions. Relatively good agreement between the fitted values of F1/F2 and the predicted values using the second-order theory has been found.

  12. Magnetic, dielectric and microwave absorption properties of rare earth doped Ni–Co and Ni–Co–Zn spinel ferrites

    Energy Technology Data Exchange (ETDEWEB)

    Stergiou, Charalampos, E-mail: stergiou@cperi.certh.gr

    2017-03-15

    In this article we analyze the electromagnetic properties of rare earth substituted Ni–Co and Ni–Co–Zn cubic ferrites in the microwave band, along with their performance as microwave absorbing materials. Ceramic samples with compositions Ni{sub 0.5}Co{sub 0.5}Fe{sub 2−x}R{sub x}O{sub 4} and Ni{sub 0.25}Co{sub 0.5}Zn{sub 0.25}Fe{sub 2−x}R{sub x}O{sub 4} (R=Y and La, x=0, 0.02), fabricated with the solid state reaction method, were characterized with regard to the complex permeability μ*(f) and permittivity ε*(f) up to 20 GHz. The rare earth substitutions basically affect the microwave μ*(f) spectra and the dynamic magnetization mechanisms of domain wall motion and magnetization rotation. Key parameters for this effect are the reduced magnetocrystalline anisotropy and the created crystal inhomogeneities. Moreover, permittivity is increased with the Y and La content, due to the enhancement of the dielectric orientation polarization. Regarding the electromagnetic wave attenuation, the prepared ferrites exhibit narrowband return losses (RL) by virtue of the cancellation of multiple reflections, when their thickness equals an odd multiple of quarter-wavelength. Interestingly, the zero-reflection conditions are satisfied in the vicinity of the ferromagnetic resonance. As the rare earth doping shifts this mechanism to lower frequencies, loss peaks with RL>46 dB occur at 4.1 GHz and 5 GHz for Y and La-doped Ni–Co–Zn spinels, whereas peaks with RL>40 dB appear at 18 GHz and 19 GHz for Y and La-doped Ni–Co spinels, respectively. The presented experimental findings underline the potential of cubic ferrites with high Co concentration in the suppression of electromagnetic reflections well above the 1 GHz region. - Highlights: • Due to cation distribution, magnetic anisotropy drops in Y and La doped samples. • Microwave permeability spectra shift to lower frequencies with rare earth doping. • Permittivity is increased due to crystal modifications

  13. Synthesis and characterization of vanadium doped SnO2 diluted magnetic semiconductor nanoparticles with enhanced photocatalytic activities

    International Nuclear Information System (INIS)

    Mazloom, J.; Ghodsi, F.E.; Golmojdeh, H.

    2015-01-01

    Highlights: • Pure and V-doped SnO 2 nanoparticles were synthesized using a facile sol–gel route. • The V 4+ ions were incorporated into the SnO 2 lattice and located at the Sn 4+ sites. • TEM images reveled that by increasing the doping content, average grain size decreased. • We show that the V-doped SnO 2 is more photoactive than undoped SnO 2 . • The V-doped SnO 2 nanoparticles exhibited ferromagnetism at room temperature. - Abstract: Vanadium doped SnO 2 nanoparticles were synthesized by a facile sol–gel method. Different analytical techniques including TG/DTG, XRD, XPS, VSM and PL were used to investigate the influence of dopant concentration on structural, morphological, compositional, magnetic and optical properties of prepared nanoparticles. The XRD study showed a dominant tetragonal structure. The X-ray photoelectron spectroscopy proved the presence of vanadium as V 4+ species. TEM image revealed that particle size decrease by doping. It was found that room temperature ferromagnetic (RTFM) behavior is strongly dependent on vanadium dopant content and the magnetic saturation dropped rapidly with increasing V content, which can be explained reasonably through bound magnetic polaron (BMP) model. A quenching in green luminescence intensity was observed in V-doped SnO 2 compared to undoped sample. The 5% V-doped SnO 2 sample showed better photocatalytic activity than undoped one in decomposing methylene blue and rhodamine B

  14. Use of thulium-sensitized rare earth-doped low phonon energy crystalline hosts for IR sources.

    Science.gov (United States)

    Ganem, Joseph; Bowman, Steven R

    2013-11-01

    Crystalline hosts with low phonon energies enable novel energy transfer processes when doped with rare earth ions. Two applications of energy transfer for rare earth ions in thulium-sensitized low phonon energy crystals that result in infrared luminescence are discussed. One application is an endothermic, phonon-assisted cross-relaxation process in thulium-doped yttrium chloride that converts lattice phonons to infrared emission, which raises the possibility of a fundamentally new method for achieving solid-state optical cooling. The other application is an optically pumped mid-IR phosphor using thulium-praseodymium-doped potassium lead chloride that converts 805-nm diode light to broadband emission from 4,000 to 5,500 nm. These two applications in chloride crystals are discussed in terms of critical radii calculated from Forster-Dexter energy transfer theory. It is found that the critical radii for electric dipole-dipole interactions in low phonon energy chloride crystals are comparable to those in conventional oxide and fluoride crystals. It is the reduction in multi-phonon relaxation rates in chloride crystals that enable these additional energy transfer processes and infrared luminescence.

  15. Effect of nickel doping concentration on structural and magnetic properties of ultrafine diluted magnetic semiconductor ZnO nanoparticles

    International Nuclear Information System (INIS)

    Sharma, Prashant K.; Dutta, Ranu K.; Pandey, Avinash C.

    2009-01-01

    The ZnO:Ni 2+ nanoparticles of mean size 2-12 nm were synthesized at room temperature by the simple co-precipitation method. The crystallite structure, morphology and size were determined by X-ray diffraction (XRD) and high-resolution transmission electron microscopy (HRTEM). The wurtzite structure of ZnO gradually degrades with the increasing Ni doping concentration and an additional NiO-associated diffraction peak was observed above 15% of Ni 2+ doping. The change in magnetic behavior of the nanoparticles of ZnO with varying Ni 2+ doping concentration was investigated using a vibrating sample magnetometer (VSM). Initially, these nanoparticles showed strong ferromagnetic behavior, however, at higher doping percentage of Ni 2+ , the ferromagnetic behavior was suppressed and paramagnetic nature was observed. The enhanced antiferromagnetic interaction between neighboring Ni-Ni ions suppressed the ferromagnetism at higher doping concentrations of Ni 2+ .

  16. Mid-infrared Fe2+:ZnSe semiconductor saturable absorber mirror for passively Q-switched Er3+-doped ZBLAN fiber laser

    Directory of Open Access Journals (Sweden)

    Shougui Ning

    2018-02-01

    Full Text Available A mid-infrared (mid-IR semiconductor saturable absorber mirror (SESAM based on Fe2+:ZnSe for passively Q-switched Er3+-doped ZBLAN fiber laser has been demonstrated. Fe2+:ZnSe SESAM was fabricated by electron beam evaporation method. Fe2+ was innovatively doped into the reflective Bragg stack, in which ZnSe layer served as both doped matrix and high refractive layer during the fabricating process. By using the Fe2+:ZnSe SESAM, stable passively Q-switched pulses with the minimum pulse width of 0.43 μs under a repetition rate of 160.82 kHz were obtained. The recorded maximum average output power of 873 mW with a peak power of 12.59 W and pulse energy of 5.43 μJ were achieved. The results demonstrated a new method for fabricating Fe2+:ZnSe SESAM, which can be used in compact mid-IR Q-switched fiber laser.

  17. Sol–gel glass-ceramics comprising rare-earth doped SnO2 and LaF3 nanocrystals: an efficient simultaneous UV and IR to visible converter

    International Nuclear Information System (INIS)

    Yanes, A. C.; Castillo, J. del; Méndez-Ramos, J.; Rodríguez, V. D.

    2011-01-01

    We report a novel class of nanostructured glass-ceramics comprising two co-existing rare-earth doped nanocrystalline phases, SnO 2 semiconductor nanocrystal (quantum dot), and LaF 3 , presenting sizes at around 4.6 and 9.8 nm, respectively, embedded into a silica glass matrix for an efficient simultaneous UV and IR to visible photon conversion. On one hand, the wide and strong UV absorption by SnO 2 quantum dot and subsequent efficient energy transfer to Eu 3+ and, on the other hand, the also very efficient IR to visible up-conversion with the pair Yb 3+ –Er 3+ partitioned into low phonon LaF 3 nanocrystalline environment, yield to visible emissions with application in improving the spectral response of photovoltaic solar cells.Graphical AbstractWe report a novel class of nanostructured glass-ceramics comprising two co-existing rare-earth doped nanocrystalline phases, SnO 2 semiconductor nanocrystal (quantum dot) and LaF 3 , presenting sizes at around 4.6 and 9.8 nm, respectively, embedded into a silica glass matrix for an efficient simultaneous UV and IR to visible photon conversion. On one hand, the wide and strong UV absorption by SnO 2 quantum dot and subsequent efficient energy transfer to Eu 3+ and, on the other hand, the also very efficient IR to visible up-conversion with the pair Yb 3+ –Er 3+ partitioned into low phonon LaF 3 nanocrystalline environment, yield to visible emissions with application in improving the spectral response of photovoltaic solar cells.

  18. Silicon rich nitride ring resonators for rare - earth doped telecommunications-band amplifiers pumped at the O-band.

    Science.gov (United States)

    Xing, P; Chen, G F R; Zhao, X; Ng, D K T; Tan, M C; Tan, D T H

    2017-08-22

    Ring resonators on silicon rich nitride for potential use as rare-earth doped amplifiers pumped at 1310 nm with amplification at telecommunications-band are designed and characterized. The ring resonators are fabricated on 300 nm and 400 nm silicon rich nitride films and characterized at both 1310 nm and 1550 nm. We demonstrate ring resonators exhibiting similar quality factors exceeding 10,000 simultaneously at 1310 nm and 1550 nm. A Dysprosium-Erbium material system exhibiting photoluminescence at 1510 nm when pumped at 1310 nm is experimentally demonstrated. When used together with Dy-Er co-doped particles, these resonators with similar quality factors at 1310 nm and 1550 nm may be used for O-band pumped amplifiers for the telecommunications-band.

  19. Using rare earth doped thiosilicate phosphors in white light emitting LEDs: Towards low colour temperature and high colour rendering

    International Nuclear Information System (INIS)

    Smet, P.F.; Korthout, K.; Haecke, J.E. van; Poelman, D.

    2008-01-01

    Rare earth doped thiosilicates are promising materials for use in phosphor converted light emitting diodes (pcLEDs). These phosphors (including the hosts Ca 2 SiS 4 , BaSi 2 S 5 and Ba 2 SiS 4 in combination with Ce 3+ and/or Eu 2+ doping) cover the entire visible part of the spectrum, as the emission colour can be changed from deep blue to red. The photoluminescence emission spectrum and the overlap of the excitation spectrum with the emission of pumping LEDs is evaluated. The trade-off between high colour rendering and high electrical-to-optical power efficiency is discussed by simulation with both blue and UV emitting LEDs. Finally, a phosphor combination with low colour temperature (3000 K) and high colour rendering (CRI = 93) is proposed

  20. Gain and refractive index dynamics in p-doped InAs quantum dash semiconductor optical amplifiers

    International Nuclear Information System (INIS)

    Komolibus, Katarzyna; Piwonski, Tomasz; Joshi, Siddharth; Chimot, Nicolas; Lelarge, Francois; Houlihan, John; Huyet, Guillaume

    2016-01-01

    The ultrafast carrier dynamics in a p-doped dash-in-a-well structure at 1.5 μm is experimentally investigated. An analysis of the timescales related to carrier relaxation and escape processes as well as the “dynamical” linewidth enhancement factor is presented and compared with results obtained from similar un-doped materials. Intentional p-doping of the active region results in an enhancement of the intermediate timescale of the gain dynamics associated with phonon-assisted electron capture and a reduction of the α-factor due to increased differential gain.

  1. Gain and refractive index dynamics in p-doped InAs quantum dash semiconductor optical amplifiers

    Energy Technology Data Exchange (ETDEWEB)

    Komolibus, Katarzyna [Centre for Advanced Photonics and Process Analysis, Cork Institute of Technology, Cork T12 P928 (Ireland); Tyndall National Institute, University College Cork, Cork T12 R5CP (Ireland); Piwonski, Tomasz, E-mail: tomasz.piwonski@tyndall.ie [Tyndall National Institute, University College Cork, Cork T12 R5CP (Ireland); Joshi, Siddharth; Chimot, Nicolas; Lelarge, Francois [III-V Lab, Alcatel Lucent Bell Labs, Palaiseau F-91767 (France); Houlihan, John [Waterford Institute of Technology, Waterford X91 K0EK (Ireland); Huyet, Guillaume [Centre for Advanced Photonics and Process Analysis, Cork Institute of Technology, Cork T12 P928 (Ireland); Tyndall National Institute, University College Cork, Cork T12 R5CP (Ireland); National Research University of Information Technologies, Mechanics and Optics, Saint Petersburg 197101 (Russian Federation)

    2016-07-18

    The ultrafast carrier dynamics in a p-doped dash-in-a-well structure at 1.5 μm is experimentally investigated. An analysis of the timescales related to carrier relaxation and escape processes as well as the “dynamical” linewidth enhancement factor is presented and compared with results obtained from similar un-doped materials. Intentional p-doping of the active region results in an enhancement of the intermediate timescale of the gain dynamics associated with phonon-assisted electron capture and a reduction of the α-factor due to increased differential gain.

  2. Enhancement of two photon absorption with Ni doping in the dilute magnetic semiconductor ZnO crystalline nanorods

    Energy Technology Data Exchange (ETDEWEB)

    Rana, Amit Kumar; Kumar, Yogendra; Arjunan, M.S.; Sen, Somaditya; Shirage, Parasharam M., E-mail: pmshirage@iiti.ac.in, E-mail: paras.shirage@gmail.com [Department of Physics, Indian Institute of Technology Indore, Simrol Campus, Khandwa Road, Indore 452020 (India); Centre of Materials Science and Engineering, Indian Institute of Technology Indore, Simrol Campus, Khandwa Road, Indore 452020 (India); J, Aneesh; Adarsh, K. V. [Department of Physics, Indian Institute of Science Education and Research, Bhopal 462023 (India)

    2015-12-07

    In this letter, we have investigated the third-order optical nonlinearities of high-quality Ni doped ZnO nanorods crystallized in wurtzite lattice, prepared by the wet chemical method. In our experiments, we found that the two photon absorption coefficient (β) increases by as much as 14 times, i.e., 7.6 ± 0.4 to 112 ± 6 cm/GW, when the Ni doping is increased from 0% to 10%. The substantial enhancement in β is discussed in terms of the bandgap scaling and Ni doping. Furthermore, we also show that the optical bandgap measured by UV-Vis and photoluminescence spectroscopies, continuously redshift with increasing Ni doping concentration. We envision that the strong nonlinear optical properties together with their dilute magnetic effects, they form an important class of materials for potential applications in magneto-optical and integrated optical chips.

  3. Enhancement of two photon absorption with Ni doping in the dilute magnetic semiconductor ZnO crystalline nanorods

    International Nuclear Information System (INIS)

    Rana, Amit Kumar; Kumar, Yogendra; Arjunan, M.S.; Sen, Somaditya; Shirage, Parasharam M.; J, Aneesh; Adarsh, K. V.

    2015-01-01

    In this letter, we have investigated the third-order optical nonlinearities of high-quality Ni doped ZnO nanorods crystallized in wurtzite lattice, prepared by the wet chemical method. In our experiments, we found that the two photon absorption coefficient (β) increases by as much as 14 times, i.e., 7.6 ± 0.4 to 112 ± 6 cm/GW, when the Ni doping is increased from 0% to 10%. The substantial enhancement in β is discussed in terms of the bandgap scaling and Ni doping. Furthermore, we also show that the optical bandgap measured by UV-Vis and photoluminescence spectroscopies, continuously redshift with increasing Ni doping concentration. We envision that the strong nonlinear optical properties together with their dilute magnetic effects, they form an important class of materials for potential applications in magneto-optical and integrated optical chips

  4. Dispersive heterodyne probing method for laser frequency stabilization based on spectral hole burning in rare-earth doped crystals

    DEFF Research Database (Denmark)

    Gobron, Olivier; Jung, K.; Galland, N.

    2017-01-01

    Frequency-locking a laser to a spectral hole in rare-earth doped crystals at cryogenic temperature has been shown to be a promising alternative to the use of high finesse Fabry-Perot cavities when seeking a very high short term stability laser (M. J. Thorpe et al., Nature Photonics 5, 688 (2011......)). We demonstrate here a novel technique for achieving such stabilization, based on generating a heterodyne beat-note between a master laser and a slave laser whose dephasing caused by propagation near a spectral hole generate the error signal of the frequency lock. The master laser is far detuned from...

  5. Theoretical study of the structure and optical properties of rare-earth-doped BeF2 glass

    International Nuclear Information System (INIS)

    Brawer, S.; Weber, M.J.

    1980-01-01

    We investigate the question of whether the local structure of a glass can be deduced directly from its optical spectra by testing such a procedure on a model system. The model system was Eu 3+ -doped BeF 2 glass generated the Monte Carlo technique of statistical mechanics. The optical energy levels of Eu 3+ were calculated from a point charge model. Using the resulting spectra as data, it is shown that details of the structure of the rare-earth ion sites of the simulated glass cannot be reconstructed uniquely from the data. Based on these results, it is concluded that reliable glass structure cannot be deduced from optical spectra

  6. New Mid-IR Lasers Based on Rare-Earth-Doped Sulfide and Chloride Materials

    International Nuclear Information System (INIS)

    Nostrand, M

    2000-01-01

    Applications in remote-sensing and military countermeasures have driven a need for compact, solid-state mid-IR lasers. Due to multi-phonon quenching, non-traditional hosts are needed to extend current solid-state, room-temperature lasing capabilities beyond ∼ 4 (micro)m. Traditional oxide and fluoride hosts have effective phonon energies in the neighborhood of 1000 cm -1 and 500 cm -1 , respectively. These phonons can effectively quench radiation above 2 and 4 (micro)m, respectively. Materials with lower effective phonon energies such as sulfides and chlorides are the logical candidates for mid-IR (4-10 (micro)m) operation. In this report, laser action is demonstrated in two such hosts, CaGa 2 S 4 and KPb 2 Cl 5 . The CaGa 2 S 4 :Dy 3+ laser operating at 4.3 (micro)m represents the first sulfide laser operating beyond 2 (micro)m. The KPb 2 Cl 5 :Dy 3+ laser operating at 2.4 (micro)m represents the first operation of a chloride-host laser in ambient conditions. Laser action is also reported for CaGa 2 S 4 :Dy 3+ at 2.4 (micro)m, CaGa 2 S 4 :Dy 3+ at 1.4 (micro)m, and KPb 2 Cl 5 :Nd 3+ at 1.06 (micro)m. Both host materials have been fully characterized, including lifetimes, absorption and emission cross sections, radiative branching ratios, and radiative quantum efficiencies. Radiative branching ratios and radiative quantum efficiencies have been determined both by the Judd-Ofelt method (which is based on absorption measurements), and by a novel method described herein which is based on emission measurements. Modeling has been performed to predict laser performance, and a new method to determine emission cross section from slope efficiency and threshold data is developed. With the introduction and laser demonstration of rare-earth-doped CaGa 2 S 4 and KPb 2 Cl 5 , direct generation of mid-IR laser radiation in a solid-state host has been demonstrated. In KPb 2 Cl 5 , predictions indicate that laser operation to 9 (micro)m may be possible, a wavelength previously

  7. Possible High Thermoelectric Power in Semiconducting Carbon Nanotubes ˜A Case Study of Doped One-Dimensional Semiconductors˜

    Science.gov (United States)

    Yamamoto, Takahiro; Fukuyama, Hidetoshi

    2018-02-01

    We have theoretically investigated the thermoelectric properties of impurity-doped one-dimensional semiconductors, focusing on nitrogen-substituted (N-substituted) carbon nanotubes (CNTs), using the Kubo formula combined with a self-consistent t-matrix approximation. N-substituted CNTs exhibit extremely high thermoelectric power factor (PF) values originating from a characteristic of one-dimensional materials where decrease in the carrier density increase both the electrical conductivity and the Seebeck coefficient in the low-N regime. The chemical potential dependence of the PF values of semiconducting CNTs has also been studied as a field-effect transistor and it turns out that the PF values show a noticeable maximum in the vicinity of the band edges. This result demonstrates that "band-edge engineering" will be crucial for solid development of high-performance thermoelectric materials.

  8. Spectroscopic and neutron detection properties of rare earth and titanium doped LiAlO 2 single crystals

    Energy Technology Data Exchange (ETDEWEB)

    Dickens, Peter T.; Marcial, José; McCloy, John; McDonald, Benjamin S.; Lynn, Kelvin G.

    2017-10-01

    In this study, LiAlO2 crystals doped with rare-earth elements and Ti were produced by the CZ method and spectroscopic and neutron detection properties were investigated. Photoluminescence revealed no clear luminescent activation of LiAlO2 by the rare-earth dopants though some interesting luminescence was observed from secondary phases within the crystal. Gamma-ray pulse height spectra collected using a 137Cs source exhibited only a Compton edge for the crystals. Neutron modeling using Monte Carlo N-Particle Transport Code revealed most neutrons used in the detection setup are thermalized, and while using natural lithium in the crystal growth, which contains 7.6 % 6Li, a 10 mm Ø by 10 mm sample of LiAlO2 has a 70.7 % intrinsic thermal neutron capture efficiency. Furthermore, the pulse height spectra collected using a 241Am-Be neutron source demonstrated a distinct neutron peak.

  9. Intense luminescence emission from rare-earth-doped MoO3 nanoplates and lamellar crystals for optoelectronic applications

    International Nuclear Information System (INIS)

    Vila, M; Díaz-Guerra, C; Jerez, D; Piqueras, J; Lorenz, K; Alves, E

    2014-01-01

    Strong and stable room-temperature photoluminescence (PL) emission is achieved in MoO 3 nanoplates and lamellar crystals doped with Er and Eu by ion implantation and subsequent annealing. Micro-Raman and PL spectroscopy reveal that optical activation of the rare earth ions and recovery of the original MoO 3 structure are achieved for shorter annealing treatments and for lower temperatures in nanoplates, as compared with lamellar crystals. Er seems to be more readily incorporated into optically active sites in the oxide lattice than Eu. The influence of the dimensionality of the host sample on the characteristics of the PL emission of both rare earth dopants is addressed. (paper)

  10. Interplay of dopants and defects in making Cu doped TiO{sub 2} nanoparticle a ferromagnetic semiconductor

    Energy Technology Data Exchange (ETDEWEB)

    Choudhury, Biswajit, E-mail: biswa.tezu@gmail.com [Department of Physics, Tezpur University, Napaam 784028, Assam (India); Choudhury, Amarjyoti [Department of Physics, Tezpur University, Napaam 784028, Assam (India); Borah, Debajit [Department of Chemical Engineering, Indian Institute of Technology Guwahati, Guwahati 781039, Assam (India)

    2015-10-15

    Here we have studied the role of oxygen defects and Cu dopants on ferromagnetism in Cu doped TiO{sub 2} nanoparticles with nominal Cu concentration of 2%, 4% and 6 mol%. Electron paramagnetic resonance (EPR) spectra analysis reveals the presence of Cu{sup 2+} in the distorted octahedral coordination of TiO{sub 2}. Cu d-states undergo strong p-d coupling with the valence band O 2p state of TiO{sub 2} resulting the extended absorption hump in the visible region. Photoluminescence results reveal the presence of oxygen defect related emission peaks in Cu doped TiO{sub 2}. Room temperature ferromagnetism is observed in all the Cu doped TiO{sub 2} nanoparticles. Saturation magnetization is the highest at 4 mol% and then there is a decrease in magnetization at 6 mol%. Ferromagnetism completely disappears on calcinations of 4% Cu doped TiO{sub 2} in air at 450 °C for 8 h. It is speculated that both oxygen vacancies and Cu d-states are involved in the room temperature ferromagnetism. Spin polarization occurs by the formation of bound magnetic polaron between electrons in Cu{sup 2+}d-states and the unpaired spins in oxygen vacancies. Presence of Cu{sup 2+}-Cu{sup 2+}d-d exchange interaction and Cu{sup 2+}-O{sup 2−}-Cu{sup 2+} antiferromagnetic superexchange interactions might have resulted in the reduction in magnetization at 6 mol% Cu. - Graphical abstract: Ferromagnetism in Cu doped TiO{sub 2} requires presence of both Cu dopant and oxygen vacancies. - Highlights: • Cu doped TiO{sub 2} nanoparticle displays room temperature ferromagnetism. • Ferromagnetism requires presence of both Cu and oxygen vacancies. • Antiferromagnetic interaction persists at high Cu dopant concentration. • Paramagnetism appears on air annealing of the doped system for longer period.

  11. Magnetic and magnetoelectric properties of NdCrTiO5 revealed by systematically rare-earth doping

    Science.gov (United States)

    Li, Qing; Feng, Zhenjie; Cheng, Cheng; Wang, Bojie; Chu, Hao; Huang, Ping; Wang, Difei; Qian, Xiaolong; Yu, Chuan; Wang, Guohua; Deng, Dongmei; Jing, Chao; Cao, Shixun; Zhang, Jincang

    2018-01-01

    We have systematically synthesized polycrystalline samples of Nd0.9A0.1CrTiO5 (A = Pr, Nd, Gd, Dy, Er, Tm, and Yb), and have investigated their crystal structure, polarization and magnetic susceptibility. The polarization values of doped samples are suppressed comparing to pure NdCrTiO5 sample, which indicates that the polarization is highly dependence with the magnetic moments of doping ions. The TN of Cr-Cr in Nd0.9A0.1CrTiO5 are dominated by both the suppression effect caused by doped magnetic moment increment and the enhancement effect caused by c axis contracting. We conclude that the magnetic moments in the rare-earth Nd sites play an important role in the magnetoelectric effect in NdCrTiO5 family. The substitution effect discussion here can help us well understand the intrinsic mechanism and provide a possible guidance in exploring new magnetoelectric coupling systems.

  12. Doping of Ga in antiferromagnetic semiconductor α-Cr2O3 and its effects on magnetic and electronic properties

    Science.gov (United States)

    Bhowmik, R. N.; Venkata Siva, K.; Ranganathan, R.; Mazumdar, Chandan

    2017-06-01

    The samples of Ga-doped Cr2O3 have been prepared using chemical co-precipitation route. X-ray diffraction pattern and Raman spectra have indicated rhombohedral crystal structure with space group R 3 bar C. Magnetic measurements indicated diluted antiferromagnetic (AFM) spin order in Ga-doped α-Cr2O3 and ferrimagnetic ordering of spins at about 50-60 K is confirmed from the analysis of the temperature dependence of dc magnetization and ac susceptibility data. Apart from magnetic dilution effect, the samples have shown superparamagnetic behavior below 50 K due to frustrated surface spins of the nano-sized grains. The samples have shown non-linear electronic properties. The current-voltage (I-V) characteristics of the Ga-doped α-Cr2O3 samples are remarkably different from α-Cr2O3 sample. The bi-stable electronic states and negative differential resistance are some of the unique non-linear electronic properties that the I-V curves of Ga-doped samples have exhibited. Optical study revealed three electronic transitions in the samples associated with band gap energy at about 2.67-2.81 eV, 1.91-2.11 eV, 1.28-1.35 eV, respectively. The results indicated multi-level electronic structure in Ga-doped α-Cr2O3 system.

  13. Terahertz semiconductor nonlinear optics

    DEFF Research Database (Denmark)

    Turchinovich, Dmitry; Hvam, Jørn Märcher; Hoffmann, Matthias

    2013-01-01

    In this proceedings we describe our recent results on semiconductor nonlinear optics, investigated using single-cycle THz pulses. We demonstrate the nonlinear absorption and self-phase modulation of strong-field THz pulses in doped semiconductors, using n-GaAs as a model system. The THz...... nonlinearity in doped semiconductors originates from the near-instantaneous heating of free electrons in the ponderomotive potential created by electric field of the THz pulse, leading to ultrafast increase of electron effective mass by intervalley scattering. Modification of effective mass in turn leads...... to a decrease of plasma frequency in semiconductor and produces a substantial modification of THz-range material dielectric function, described by the Drude model. As a result, the nonlinearity of both absorption coefficient and refractive index of the semiconductor is observed. In particular we demonstrate...

  14. Luminescence investigation of R{sup 3+}-doped alkaline earth tungstates prepared by a soft chemistry method

    Energy Technology Data Exchange (ETDEWEB)

    Barbosa, Helliomar P. [Instituto de Química, Universidade de São Paulo, São Paulo, SP (Brazil); Kai, Jiang [Pontifícia Universidade Católica do Rio de Janeiro, Departamento de Química, Rio de Janeiro, RJ, Brazil (Brazil); Silva, Ivan G.N.; Rodrigues, Lucas C.V. [Instituto de Química, Universidade de São Paulo, São Paulo, SP (Brazil); Felinto, Maria C.F.C. [Centro de Química e Meio Ambiente, Instituto de Pesquisas Energéticas e Nucleares, São Paulo, SP (Brazil); Hölsä, Jorma [Instituto de Química, Universidade de São Paulo, São Paulo, SP (Brazil); Department of Chemistry, University of Turku,FI-20014 Turku (Finland); Turku University Centre for Materials and Surfaces (MatSurf), Turku (Finland); Malta, Oscar L. [Departamento de Química Fundamental, Universidade Federal de Pernambuco, Recife, PE (Brazil); Brito, Hermi F., E-mail: hefbrito@iq.usp.br [Instituto de Química, Universidade de São Paulo, São Paulo, SP (Brazil)

    2016-02-15

    Highly luminescent rare earth (R{sup 3+}) doped alkaline-earth tungstates MWO{sub 4}:R{sup 3+} (M{sup 2+}: Ca, Sr and Ba, R{sup 3+}: Eu, Tb, Gd) were prepared with a room temperature coprecipitation method. The phosphors were characterized by X-ray powder diffraction (XPD), thermal analysis (TG), infrared absorption spectroscopy (FTIR) and UV excited photoluminescence. The as-prepared MWO{sub 4}:R{sup 3+} particles belong to the tetragonal scheelite phase, and are well crystallized and are of the average size of 16–48 nm. The excitation and emission spectra of the materials were recorded at 300 and 77 K temperatures. The luminescent materials exhibit intense red (Eu{sup 3+}) and green (Tb{sup 3+}) colors under UV excitation. The excitation spectra of the Eu{sup 3+} doped materials show broad bands arising from the ligand-to-metal charge transfer transitions (O{sup 2−}→W{sup VI} and O{sup 2−}→Eu{sup 3+}) as well as narrow bands from 4f–4f intraconfigurational transitions of Eu{sup 3+}. 4f–4f emission data of the Eu{sup 3+} and Tb{sup 3+} in the MWO{sub 4} host matrices as well as the values of emission quantum efficiencies of the {sup 5}D{sub 0} level and the 4f–4f experimental intensity parameters of Eu{sup 3+} ion are presented and discussed. - Highlights: • Highly red Europium and green Terbium doped tungstate under UV excitation. • Efficient energy transfer process from tungstate to R{sup 3+} ion. • Promising candidates for a red (Eu{sup 3+}) and green (Tb{sup 3+}) emitting phosphors. • Ligand Metal charge transfer to R{sup 3+} ion. • Charge compensation with Na{sup +}.

  15. Rare-Earth Oxide Ion (Tm3+, Ho3+, and U3+) Doped Glasses and Fibres for 1.8 to 4 Micrometer Coherent and Broadband Sources

    Science.gov (United States)

    2006-07-24

    oxide ( TeO2 ) , fluorine- containing silicate (SiOF2) and germanate (GeOF2) glass hosts for each dopant by characterising the spectroscopic properties...Earth Oxide Ion (Tm3+, Ho3+, And U3+) Doped Glasses And Fibres For 1.8 To 4 Micrometer Coherent And Broadband Sources 5c. PROGRAM ELEMENT NUMBER 5d...Rare-earth oxide ion (Tm3+, Ho3+, and U3+) doped glasses and fibres for 1.8 to 4 micrometer coherent and broadband sources Report prepared

  16. Nanocasting synthesis of co-doped In{sub 2}O{sub 3}: a 3D diluted magnetic semiconductor composed of nanospheres

    Energy Technology Data Exchange (ETDEWEB)

    Deng, Ni; Li, Jing; Hong, Bo; Jin, Dingfeng; Peng, Xiaoling; Wang, Xinqing; Ge, Hongliang; Jin, Hongxiao, E-mail: hxjin@cjlu.edu.cn, E-mail: hxjin5704@qq.com [China Jiliang University, Zhejiang Province Key Laboratory of Magnetism, College of Materials Science and Engineering (China)

    2015-04-15

    Mesoporous 3D nanosphere arrays of In{sub 2−x}Co{sub x}O{sub 3} (x = 0, 0.01, 0.03, 0.05, and 0.07) were synthesized via nanocasting using the mesoporous silica LP-FDU-12 as a hard template. The mesostructure, morphology, optical properties, and magnetic properties of the materials were determined. The diameter of the nanospheres was about 15–22 nm, and the nanospheres stacked into 0.5–5 μm arrays (particles). The data revealed that the Co ions entered the lattice of the In{sub 2}O{sub 3} bixbyite phase leading to a reduction of the cell parameter. The result also demonstrated that the size of the mesostructured ordering was approximately the same as the particle diameter. Moreover, the optical band gap of Co-doped In{sub 2}O{sub 3} decreased monotonically with the increase of Co concentration and the room-temperature photoluminescence was also observed. The un-doped In{sub 2}O{sub 3} exhibited a ferromagnetic behavior superimposed on a diamagnetic background, while the doped In{sub 2}O{sub 3} displayed a room-temperature ferromagnetic behavior superimposed on a paramagnetic background, which may be correlated with the surface texture of the mesostructure. The mesoporous diluted magnetic semiconductors may find their applications in spintronic nanodevices because of their 3D uniform arrangement of nanospheres and their room-temperature ferromagnetic behavior.

  17. Construction of a system for up-conversion detection in vitroceramics doped with rare earths

    International Nuclear Information System (INIS)

    Santa Cruz, P.A.; Azevedo, W.M. de; Sa, G.F. de

    1983-01-01

    A system capable of detecting up-conversion processes by energy transference or cooperative luminescence was developed. Pulverized vitroceramic samples containing PbF 2 and GeO 2 , doped with Yb 2 O 3 as sensitizer and Tm 2 O 3 or Er 2 O 3 as activator, were used. A diagram of the detection system, as well as graphs showing the variation of the emission intensity of these doped vitroceramics as a function of excitation intensity (970 mn), are presented. (C.L.B.) [pt

  18. Theoretical approach of photo-field emission in degenerated semiconductors. The case of slightly P-doped silicon tips; Approche theorique de la photoemission de champ a partir de semiconducteurs degeneres. Cas des pointes de silicium faiblement dope p

    Energy Technology Data Exchange (ETDEWEB)

    Chbihi El Wahoudi, A. [Ecole Doctorale des Sciences Fondamentales, Clermont-Ferrand-2 Univ., 63 - Aubiere (France). U.F.R. de Recherche Scientifique et Technique

    1996-12-20

    After defining field emission in metallic tips, we examine thoroughly a theory of photo-field emission following the works of Bagchi, Schwartz and Gao. This theory is compared to the experimental results of Reifenberger et al. We study the field emission in a semiconductor, following R. Stratton, and we propose a new theoretical interpretation of the anomalous growth of current with field, as it often occurs in the characteristic current-voltage. We assume the creation by the field of a dynamic quantum well in the surface conduction band. As a consequence of the induced degeneracy, we express theoretically the contribution to the current, of the electrons confined in the well. We compare this hypothesis to the emission of doped P silicon. There is a fairly good agreement. Assuming that the electrons are confined in the well, we develop a new theoretical approach of the photo-field emission of a degenerated semiconductor. We derive the photoelectric transition probability in the case of laser YAG pulse of picosecond duration, then the photocurrent densities of various photonic energies for distinct values of electric field, taking into account the optical property of the medium. We are thus able to interpret our experimental results with a good agreement. This original development should enable us to predict the behaviour of our tipped photocathodes in photo-injectors (CLIC, CANDELA, Tesla). These photocathodes could be interesting in infrared detection. (author) 55 refs.

  19. Search for a metallic dangling-bond wire on n-doped H-passivated semiconductor surfaces

    DEFF Research Database (Denmark)

    Engelund, Mads; Papior, Nick Rübner; Brandimarte, Pedro

    2016-01-01

    We have theoretically investigated the electronic properties of neutral and n-doped dangling bond (DB) quasi-one-dimensional structures (lines) in the Si(001):H and Ge(001):H substrates with the aim of identifying atomic-scale interconnects exhibiting metallic conduction for use in on-surface cir...

  20. Experimental demonstration of efficient and selective population transfer and qubit distillation in a rare-earth-metal-ion-doped crystal

    International Nuclear Information System (INIS)

    Rippe, Lars; Nilsson, Mattias; Kroell, Stefan; Klieber, Robert; Suter, Dieter

    2005-01-01

    In optically controlled quantum computers it may be favorable to address different qubits using light with different frequencies, since the optical diffraction does not then limit the distance between qubits. Using qubits that are close to each other enables qubit-qubit interactions and gate operations that are strong and fast in comparison to qubit-environment interactions and decoherence rates. However, as qubits are addressed in frequency space, great care has to be taken when designing the laser pulses, so that they perform the desired operation on one qubit, without affecting other qubits. Complex hyperbolic secant pulses have theoretically been shown to be excellent for such frequency-addressed quantum computing [I. Roos and K. Molmer, Phys. Rev. A 69, 022321 (2004)] - e.g., for use in quantum computers based on optical interactions in rare-earth-metal-ion-doped crystals. The optical transition lines of the rare-earth-metal-ions are inhomogeneously broadened and therefore the frequency of the excitation pulses can be used to selectively address qubit ions that are spatially separated by a distance much less than a wavelength. Here, frequency-selective transfer of qubit ions between qubit states using complex hyperbolic secant pulses is experimentally demonstrated. Transfer efficiencies better than 90% were obtained. Using the complex hyperbolic secant pulses it was also possible to create two groups of ions, absorbing at specific frequencies, where 85% of the ions at one of the frequencies was shifted out of resonance with the field when ions in the other frequency group were excited. This procedure of selecting interacting ions, called qubit distillation, was carried out in preparation for two-qubit gate operations in the rare-earth-metal-ion-doped crystals. The techniques for frequency-selective state-to-state transfer developed here may be also useful also for other quantum optics and quantum information experiments in these long-coherence-time solid

  1. Strong broad green UV-excited photoluminescence in rare earth (RE = Ce, Eu, Dy, Er, Yb) doped barium zirconate

    Energy Technology Data Exchange (ETDEWEB)

    Borja-Urby, R. [Grupo de Espectroscopia de Materiales Avanzados y Nanoestructurados (EMANA), Centro de Investigaciones en Optica A. C., Leon, Gto. 37150 (Mexico); Diaz-Torres, L.A., E-mail: ditlacio@cio.mx [Grupo de Espectroscopia de Materiales Avanzados y Nanoestructurados (EMANA), Centro de Investigaciones en Optica A. C., Leon, Gto. 37150 (Mexico); Salas, P. [Centro de Fisica Aplicada y Tecnologia Avanzada, Universidad Nacional Autonoma de Mexico, A.P. 1-1010, Queretaro, Qro. 76000 (Mexico); Angeles-Chavez, C. [Instituto Mexicano del Petroleo, Ciudad de Mexico, D. F. 07730 (Mexico); Meza, O. [Grupo de Espectroscopia de Materiales Avanzados y Nanoestructurados (EMANA), Centro de Investigaciones en Optica A. C., Leon, Gto. 37150 (Mexico)

    2011-10-25

    Highlights: > Trivalent rare earth (RE) substitution on Zr{sup 4+} sites in BaZrO{sub 3} lead to band gap narrowing. > RE substitution lead to enhanced blue-green intrinsic emission of nanocrystalline BaZrO{sub 3} > Blue-green hue of BaZrO3:RE depends on RE dopant and excitation UV wavelength > BaZrO3: Dy{sup 3+} PL chromatic coordinates correspond to pure white color coordinates of CIE 1931 model - Abstract: The wet synthesis hydrothermal method at 100 deg. C was used to elaborate barium zirconate (BaZrO{sub 3}) unpurified with 0.5 mol% of different rare earth ions (RE = Yb, Er, Dy, Eu, Ce). Morphological, structural and UV-photoluminescence properties depend on the substituted rare earth ionic radii. While the crystalline structure of RE doped BaZrO{sub 3} remains as a cubic perovskite for all substituted RE ions, its band gap changes between 4.65 and 4.93 eV. Under 267 nm excitation the intrinsic green photoluminescence of the as synthesized BaZrO{sub 3}: RE samples is considerably improved by the substitution on RE ions. For 1000 deg. C annealed samples, under 267 nm, the photoluminescence is dominated by the intrinsic BZO emission. It is interesting to notice that Dy{sup 3+}, Er{sup 3+} and Yb{sup 3+} doped samples present whitish emissions that might be useful for white light generation under 267 nm excitation. CIE color coordinates are reported for all samples.

  2. Rare earth doped nanoparticles in organic and inorganic host materials for application in integrated optics

    NARCIS (Netherlands)

    Dekker, R.; Hilderink, L.T.H.; Diemeer, Mart; Stouwdam, J.W.; Sudarsan, V; van Veggel, F.C.J.M.; Driessen, A.; Worhoff, Kerstin; Misra, D; Masscher, P.; Sundaram, K.; Yen, W.M.; Capobianco, J.

    2006-01-01

    The preparation and the optical properties of lanthanum fluoride (LaF3) nanoparticles doped with erbium and neodymium will be discussed. Organic and inorganic materials in the form of polymers and sol-gels were used to serve as the hosts for the inorganic nanoparticles, respectively. The organic

  3. Towards rare-earth-ion-doped Al2O3 active integrated optical devices

    OpenAIRE

    Ay, F.; Bradley, J.; Worhoff, Kerstin; Pollnau, Markus

    2007-01-01

    Aluminum oxide planar waveguides with low loss (0.11 dB/cm at 1523 nm) are fabricated. Channel waveguides are obtained by reactive ion etching. Erbium-doped layers show no upconversion luminescence, a hint that ion clustering is small.

  4. Optical spectroscopy of rare-earth ions doped KY(WO4)2 thin films

    NARCIS (Netherlands)

    García-Revilla, S.; Valiente, R.; Romanyuk, Y.E.; Utke, I.; Pollnau, Markus

    KY(WO4)2 thin films doped with Dy3+, Tb3+, Yb3+, were grown onto KY(WO4)2 substrates using liquid-phase epitaxy. Spectroscopic investigations of the grown layers were performed. Obtained results were compared with spectra given for bulk crystals. Upconversion experiments after direct Yb3+ excitation

  5. Mn-doped Ga(As,P) and (Al,Ga)As ferromagnetic semiconductors: electronic structure calculations

    Czech Academy of Sciences Publication Activity Database

    Mašek, Jan; Kudrnovský, Josef; Máca, František; Sinova, J.; MacDonald, A. H.; Champion, R.P.; Gallagher, B. L.; Jungwirth, Tomáš

    2007-01-01

    Roč. 75, č. 4 (2007), 045202/1-045202/6 ISSN 1098-0121 R&D Projects: GA ČR GA202/05/0575; GA ČR GA202/04/0583 Institutional research plan: CEZ:AV0Z10100521; CEZ:AV0Z10100520 Keywords : ferromagnetic semiconductors * electronic structure calculations Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.172, year: 2007

  6. Site preference of rare earth doping in palladium-iron-arsenide superconductors

    Energy Technology Data Exchange (ETDEWEB)

    Stuerzer, Christine; Schulz, Anne; Johrendt, Dirk [Department Chemie, Ludwig-Maximilians-Universitaet Muenchen (Germany)

    2014-12-15

    The solid solutions (Ca{sub 1-y}RE{sub y}Fe{sub 1-x}Pd{sub x}As){sub 10}Pd{sub z}As{sub 8} with RE = La, Ce, and Pr were synthesized by solid state methods and characterized by X-ray powder diffraction with subsequent Rietveld refinements [(CaFeAs){sub 10}Pt{sub 3}As{sub 8}-type structure (''1038 type''), P anti 1, Z = 1]. Substitution levels (Ca/RE, Fe/Pd, and Pd/□) obtained from Rietveld refinements coincide well with the nominal values according to EDS and the linear courses of the lattice parameters as expected from the ionic radii. The RE atoms favor the one out of five calcium sites, which is eightfold coordinated by arsenic. This leads to significant stabilization of the structure, and especially prevents palladium over-doping in the iron-arsenide layers as observed in the pristine compound (CaFe{sub 1-x}Pd{sub x}As){sub 10}Pd{sub z}As{sub 8}. While the stabilization energy is estimated to about 40 kJ.mol{sup -1} by electronic structure calculations, the reason for the diminished Fe/Pd substitution through RE doping is still not yet understood. We suggest that the electrons transferred from RE{sup 3+} to the (Fe{sub 1-x}Pd{sub x})As layer makes higher palladium concentrations unfavorable. Anyway the reduced palladium doping enables superconductivity with critical temperatures up to 20 K (onset) in the RE doped Pd1038 samples, which could not be obtained earlier due to palladium over-doping in the active iron-arsenide layers. (Copyright copyright 2014 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  7. Rare earths (Ce, Eu, Tb) doped Y2Si2O7 phosphors for white LED

    International Nuclear Information System (INIS)

    Sokolnicki, Jerzy

    2013-01-01

    Nanocrystalline yttrium pyrosilicate Y 2 Si 2 O 7 (YPS) singly, doubly or triply doped with Ce 3+ , Eu 3+ , Tb 3+ was obtained by the reaction of nanostructured Y 2 O 3 :Ln 3+ and colloidal SiO 2 at high temperatures. X-ray diffraction analysis confirmed the formation of a single phase of α-YPS at 1200 °C. Two series of YPS samples doped with Eu 3+ or Eu 3+ /Tb 3+ were obtained by applying the reducing atmosphere (75%N 2 +25%H 2 ) at different temperatures. The luminescence and excitation spectra are reported. The singly Eu 3+ doped YPS emit from both Eu 3+ and Eu 2+ ions, with the spectral position and width of the Eu 2+ emission different in both series. The presence of Eu 2+ in the samples was confirmed by electron paramagnetic resonance (EPR) spectra. A broadband emission of Eu 2+ (380–650 nm), combined with the red emission of Eu 3+ is perceived by the naked eye as white light. Co-doping of YPS:Eu 3+ with Tb 3+ results in enhancement of the green component of the emission, and well-balanced white luminescence. The colour of this emission is tunable, and it is possible to get Commission International de I'Eclairage (CIE) chromaticity coordinates of (0.327, 0.327), colour-rendering index (CRI) of 85, and quantum efficiency (QE) of 71%. These phosphors are efficiently excited in the wavelength range of 300–420 nm, which perfectly matches a near UV-emitting InGaN chip. It was shown that for triply (Ce 3+ , Eu 3+ and Tb 3+ ) doped samples the three emissions from the particular activators can be generated using one excitation wavelength. The white light resulting from the superposition of the blue (Ce 3+ ), green (Tb 3+ ) and red (Eu 3+ ) emissions can be obtained by varying the concentration of the active ions and the treating atmosphere, i.e. reducing or oxidising. Eu 2+ was not detected in the triply doped samples, and hence line emissions mostly exhibit CRI values equal to or below 30. - Highlights: ► Nanocrystalline Y 2 Si 2 O 7 was obtained by the

  8. Design and length optimization of an adiabatic coupler for on-chip vertical integration of rare-earth-doped double tungstate waveguide amplifiers

    NARCIS (Netherlands)

    Mu, Jinfeng; Sefünç, Mustafa; García Blanco, Sonia Maria

    2014-01-01

    The integration of rare-earth doped double tungstate waveguide amplifiers onto passive technology platforms enables the on-chip amplification of very high bit rate signals. In this work, a methodology for the optimized design of vertical adiabatic couplers between a passive Si3N4 waveguide and the

  9. Rare-earth doped transparent ceramics for spectral filtering and quantum information processing

    Science.gov (United States)

    Kunkel, Nathalie; Ferrier, Alban; Thiel, Charles W.; Ramírez, Mariola O.; Bausá, Luisa E.; Cone, Rufus L.; Ikesue, Akio; Goldner, Philippe

    2015-09-01

    Homogeneous linewidths below 10 kHz are reported for the first time in high-quality Eu3+ doped Y 2O3 transparent ceramics. This result is obtained on the 7F0→5D0 transition in Eu3+ doped Y 2O3 ceramics and corresponds to an improvement of nearly one order of magnitude compared to previously reported values in transparent ceramics. Furthermore, we observed spectral hole lifetimes of ˜15 min that are long enough to enable efficient optical pumping of the nuclear hyperfine levels. Additionally, different Eu3+ concentrations (up to 1.0%) were studied, resulting in an increase of up to a factor of three in the peak absorption coefficient. These results suggest that transparent ceramics can be useful in applications where narrow and deep spectral holes can be burned into highly absorbing lines, such as quantum information processing and spectral filtering.

  10. Room temperature ferromagnetism with large magnetic moment at low field in rare-earth-doped BiFeO₃ thin films.

    Science.gov (United States)

    Kim, Tae-Young; Hong, Nguyen Hoa; Sugawara, T; Raghavender, A T; Kurisu, M

    2013-05-22

    Thin films of rare earth (RE)-doped BiFeO3 (where RE=Sm, Ho, Pr and Nd) were grown on LaAlO3 substrates by using the pulsed laser deposition technique. All the films show a single phase of rhombohedral structure with space group R3c. The saturated magnetization in the Ho- and Sm-doped films is much larger than the values reported in the literature, and is observed at quite a low field of 0.2 T. For Ho and Sm doping, the magnetization increases as the film becomes thinner, suggesting that the observed magnetism is mostly due to a surface effect. In the case of Nd doping, even though the thin film has a large magnetic moment, the mechanism seems to be different.

  11. Rare Earth Doped GaN Laser Structures Using Metal Modulated Epitaxy

    Science.gov (United States)

    2015-03-30

    Technology and Physics of MBE. Plenum, New York. (1985) p.38 5. Shawn D. Burnham, Improved Understanding And Control Of Magnesium -Doped Gallium Nitride By...range in order to minimize Mg self-compensation or other kind of defects. The other straightforward method is to increase the magnesium concentration...tested using NaOH etching 22. The surface is resistant to the etching indicating that no polarity inversion occurs during the growth, even though Mg

  12. Effect of light rare earth doping in 123 high temperature supercoductors

    Directory of Open Access Journals (Sweden)

    M. Mirzadeh

    2006-09-01

    Full Text Available   We have studied the structural and electrical properties of Gd(Ba2-xLaxCu3O7+δ [Gd(BaLa123], Gd(Ba2-xNdxCu3O7+δ [Gd(BaNd123], and Nd(Ba2-xPrxCu3O7+δ [Nd(BaPr123] compounds with 0.0≤x≤0.8 prepared by the standard solid-state reaction. The XRD patterns show that all of the samples with x≤0.5 are isosructure 123 phase, but in Gd(BaNd123 and Nd(BaPr123 there are several impurity peaks in the XRD patterns for x≥0.6. We estimated the xcsolubility=1.1, 0.6 and 0.55 in Gd(BaLa123, Nd(BaPr123, and Gd(BaNd123, respectively. The resistivity increases with the increase of doping. The decrease of Tc with the increase of Pr doping is faster than Nd and La doping. The normal-state resistivity is fitted for two and three dimensional variable range hopping (2D&amp3D-VRH and Coulomb gap (CG regimes, separately. Our results indicate that the dominant mechanism for x≥xcSIT is 3D-VRH. The broadening of magnetoresistance have been investigated by TAFC and AH models. The pinning energy and Josephson coupling energy, decrease with the increase of applied magnetic field as U~H-β, these values also decrease with doping concentration Pr is more effective than Nd and La.

  13. Rare earth oxide-doped titania nanocomposites with enhanced photocatalytic activity towards the degradation of partially hydrolysis polyacrylamide

    International Nuclear Information System (INIS)

    Li Jinhuan; Yang Xia; Yu Xiaodan; Xu, Leilei; Kang Wanli; Yan Wenhua; Gao Hongfeng; Liu Zhonghe; Guo Yihang

    2009-01-01

    Rare-earth oxide-doped titania nanocomposites (RE 3+ /TiO 2 , where RE = Eu 3+ , Pr 3+ , Gd 3+ , Nd 3+ , and Y 3+ ) were prepared by a one-step sol-gel-solvothermal method. The products exhibited anatase phase structure, mesoporosity, and interesting surface compositions with three oxygen species and two titanium species. The products were used as the photocatalysts to degrade a partially hydrolysis polyacrylamide (HPAM) under UV-light irradiation, a very useful polymer in oil recovery. For comparison, Degussa P25 and as-prepared pure TiO 2 were also tested under the same conditions. The enhanced photocatalytic activity was obtained on as-prepared Eu 3+ (Gd 3+ , Pr 3+ )/TiO 2 composites, and the reasons were explained. Finally, the degradation pathway of HPAM over the RE 3+ /TiO 2 composite was put forward based on the intermediates produced during the photocatalysis procedure.

  14. White emission materials from glass doped with rare Earth ions: A review

    Energy Technology Data Exchange (ETDEWEB)

    Yasaka, P.; Kaewkhao, J., E-mail: mink110@hotmail.com [Center of Excellence in Glass Technology and Materials Science (CEGM), Nakhon Pathom Rajabhat University, Nakhon Pathom 73000 (Thailand); Physics Program, Faculty of Science and Technology, Nakhon Pathom Rajabhat University, 73000 (Thailand)

    2016-03-11

    Solid State Lighting (SSL) based devices are predicted to play a crucial role in the coming years. Development of W-LED, which have an edge over traditional lighting sources due to their compact size, higher reliability, shock resistance, interesting design possibilities, higher transparency and an extremely long lifetime. Over the fifteen trivalent lanthanide ions, Dy{sup 3+} ions doped glasses are most appropriate for white light generation because of the fact that it exhibits two intense emission bands corresponds to the {sup 4}F{sub 9/2}→{sup 6}H{sub 15/2} (magnetic dipole) and {sup 4}F{sub 9/2}→{sup 6}H{sub 13/2} (electric dipole) transitions at around 480-500 nm and 580-600 nm pertaining to blue and yellow regions respectively. In this work, the developments of Dy3+ doped in several glass structures for white emitting materials application have reviewed. Properties of Dy{sup 3+} doped in glasses were discussed for use as a solid state lighting materials application.

  15. Luminescence investigations of rare earth doped lead-free borate glasses modified by MO (M = Ca, Sr, Ba)

    Energy Technology Data Exchange (ETDEWEB)

    Janek, Joanna, E-mail: janek.joanna@gmail.com; Sołtys, Marta; Żur, Lidia; Pietrasik, Ewa; Pisarska, Joanna; Pisarski, Wojciech A.

    2016-09-01

    Series of lead-free borate glasses with different oxide modifiers and lanthanide ions were prepared. The effect of oxide modifiers MO (M = Ca, Sr, Ba) on spectroscopic properties of trivalent Ln{sup 3+} (Ln = Eu, Er, Pr) were systematically investigated. Especially, the luminescence spectra of Ln{sup 3+}-doped lead-free borate glasses are presented and discussed in relation to the impact of selective components (CaO, SrO and BaO). Several spectroscopic parameters, such as the fluorescence intensity ratio R/O (Eu{sup 3+}) and measured luminescence lifetimes for the {sup 5}D{sub 0} (Eu{sup 3+}), {sup 4}I{sub 13/2} (Er{sup 3+}) and {sup 1}D{sub 2} (Pr{sup 3+}) excited states of lanthanide ions were analyzed in details. The research proved that spectroscopic properties of trivalent Ln{sup 3+} depend significantly on kind of presence oxide modifiers MO (M = Ca, Sr, Ba) in glass host matrices. - Highlights: • Luminescence of Ln{sup 3+}-doped borate glasses was presented and discussed. • Effect of glass modifiers on spectroscopic properties of rare earths was studied. • Measured luminescence lifetimes of Ln{sup 3+} (Ln = Eu, Er, Pr) were analyzed. • Luminescence intensity ratios R/O (Eu{sup 3+}) were determined.

  16. Development of the external cooling device of increase the productivity of neutron-transmutation-doped silicon semiconductor (NTD-Si) (Joint research)

    International Nuclear Information System (INIS)

    Hirose, Akira; Wada, Shigeru; Sasajima, Fumio; Kusunoki, Tsuyoshi; Kameyama, Iwao; Aizawa, Ryouji; Kikuchi, Naoyuki

    2007-01-01

    Neutron-Transmutation-Doped Silicon Semiconductor (hereinafter referred as 'NTD-Si') is the best semiconductor for the power device. The needs of NTD-Si increase recently in proportion to the popularization of hybrid-cars. A fission research reactor, which is a steady state neutron source, is being expected as the best device to meet the needs. So far, we have reconsidered the existing approach which is employed for NTD-Si production works at the research reactors JRR-3, JRR-4 and JMTR of JAEA so as to meet the needs. As one of the effective measures, we found out that the productivity can be increased by incorporating a new device to cool down radioactivity of irradiated silicon ingots at the place outside the main stream from the loading of silicon ingots to the withdrawal of irradiated ingots to the existing JRR-3 Uniformity Irradiation System. Consequently, we developed and installed the device (hereinafter referred as 'external cooling device'). After an ingot was irradiated once, it is turned over manually and irradiated again in order to irradiate the ingot uniformly. With the conventional system, it was necessary to wait the radioactivity of ingot decrease less than the permissible level with holding the ingot in the irradiation equipment. It was effective to shorten the waiting period by using an external cooling device for production increase of NTD-Si. It is expected that the productivity of NTD-Si will be increased by using the external cooling device. This report mentions the design of the external cooling device and verification between its design specifications and the performance of the device completed. (author)

  17. Semiconductor nanostructures

    Energy Technology Data Exchange (ETDEWEB)

    Marstein Erik Stensrud

    2003-07-01

    This thesis presents a study of two material systems containing semiconductor nanocrystals, namely porous silicon (PSi) films and germanium (Ge) nanocrystals embedded in silicon dioxide (SiO2) films. The PSi films were made by anodic etching of silicon (Si) substrates in an electrolyte containing hydrofluoric acid. The PSi films were doped with erbium (Er) using two different doping methods. electrochemical doping and doping by immersing the PSi films in a solution containing Er. The resulting Er concentration profiles were investigated using scanning electron microscopy (SEN1) combined with energy dispersive X-ray analysis (EDS). The main subject of the work on PSi presented in this thesis was investigating and comparing these two doping methods. Ge nanocrystals were made by implanting Ge ions into Si02 films that were subsequently annealed. However. nanocrystal formation occurred only for certain sets of processing parameters. The dependence of the microstructure of the Ge implanted Si02 films on the processing parameters were therefore investigated. A range of methods were employed for these investigations, including transmission electron microscopy (TEM) combined with EDS, X-ray photoelectron spectroscopy (XPS) and secondary ion mass spectroscopy (SIMS). The observed structures, ranging from Ge nanocrystals to voids with diameters of several tens of nanometers and Ge rich Si02 films without any nanocrystals is described. A model explaining the void formation is also presented. For certain sets of processing parameters. An accumulation of Ge at the Si-Si02 interface was observed. The effect of this accumulation on the electrical properties of MOS structures made from Ge implanted SiO2 films was investigated using CV-measurements. (Author)

  18. Rare-earth-doped materials with application to optical signal processing, quantum information science, and medical imaging technology

    Science.gov (United States)

    Cone, R. L.; Thiel, C. W.; Sun, Y.; Böttger, Thomas; Macfarlane, R. M.

    2012-02-01

    Unique spectroscopic properties of isolated rare earth ions in solids offer optical linewidths rivaling those of trapped single atoms and enable a variety of recent applications. We design rare-earth-doped crystals, ceramics, and fibers with persistent or transient "spectral hole" recording properties for applications including high-bandwidth optical signal processing where light and our solids replace the high-bandwidth portion of the electronics; quantum cryptography and information science including the goal of storage and recall of single photons; and medical imaging technology for the 700-900 nm therapeutic window. Ease of optically manipulating rare-earth ions in solids enables capturing complex spectral information in 105 to 108 frequency bins. Combining spatial holography and spectral hole burning provides a capability for processing high-bandwidth RF and optical signals with sub-MHz spectral resolution and bandwidths of tens to hundreds of GHz for applications including range-Doppler radar and high bandwidth RF spectral analysis. Simply stated, one can think of these crystals as holographic recording media capable of distinguishing up to 108 different colors. Ultra-narrow spectral holes also serve as a vibration-insensitive sub-kHz frequency reference for laser frequency stabilization to a part in 1013 over tens of milliseconds. The unusual properties and applications of spectral hole burning of rare earth ions in optical materials are reviewed. Experimental results on the promising Tm3+:LiNbO3 material system are presented and discussed for medical imaging applications. Finally, a new application of these materials as dynamic optical filters for laser noise suppression is discussed along with experimental demonstrations and theoretical modeling of the process.

  19. Rutile-type Co doped SnO{sub 2} diluted magnetic semiconductor nanoparticles: Structural, dielectric and ferromagnetic behavior

    Energy Technology Data Exchange (ETDEWEB)

    Mehraj, Sumaira, E-mail: sumairamehraj07@gmail.com [Department of Applied Physics, Aligarh Muslim University, Aligarh-202002 (India); Shahnawaze Ansari, M. [Center of Nanotechnology, King Abdulaziz University, Jeddah-21589 (Saudi Arabia); Alimuddin [Department of Applied Physics, Aligarh Muslim University, Aligarh-202002 (India)

    2013-12-01

    Nanoparticles of basic composition Sn{sub 1−x}Co{sub x}O{sub 2} (x=0.00, 0.01, 0.03, 0.05 and 0.1) were synthesized through the citrate-gel method and were characterized for structural properties using X-ray diffraction (XRD), Scanning electron microscopy (SEM), Energy dispersive X-ray spectroscopy (EDS) and Fourier transform infrared spectroscopy (FT-IR). XRD analysis of the powder samples sintered at 500 °C for 12 h showed single phase rutile type tetragonal structure and the crystallite size decreased as the cobalt content was increased. FT-IR spectrum displayed various bands that came due to fundamental overtones and combination of O–H, Sn–O and Sn–O–Sn entities. The effect of Co doping on the electrical and magnetic properties was studied using dielectric spectroscopy and vibrating sample magnetometer (VSM) at room temperature. The dielectric parameters (ε, tan δ and σ{sub ac}) show their maximum value for 10% Co doping. The dielectric loss shows anomalous behavior with frequency where it exhibits the Debye relaxation. The variation of dielectric properties and ac conductivity with frequency reveals that the dispersion is due to the Maxwell–Wagner type of interfacial polarization in general and hopping of charge between Sn{sup 2+} and Sn{sup 4+} as well as between Co{sup 2+} and Co{sup 3+} ions. The complex impedance analysis was used to separate the grain and grain boundary contributions in the system which shows that the conduction process in grown nanoparticles takes place predominantly through grain boundary volume. Hysteresis loops were observed clearly in M–H curves from 0.01 to 0.1% Co doped SnO{sub 2} samples. The saturation magnetization of the doped samples increased slightly with increase of Co concentration. However pure SnO{sub 2} displayed paramagnetism which vanished at higher values of magnetic field.

  20. Study of the vertical transport in p-doped superlattices based on group III-V semiconductors

    Directory of Open Access Journals (Sweden)

    Sipahi Guilherme

    2011-01-01

    Full Text Available Abstract The electrical conductivity σ has been calculated for p-doped GaAs/Al0.3Ga0.7As and cubic GaN/Al0.3Ga0.7N thin superlattices (SLs. The calculations are done within a self-consistent approach to the k → ⋅ p → theory by means of a full six-band Luttinger-Kohn Hamiltonian, together with the Poisson equation in a plane wave representation, including exchange correlation effects within the local density approximation. It was also assumed that transport in the SL occurs through extended minibands states for each carrier, and the conductivity is calculated at zero temperature and in low-field ohmic limits by the quasi-chemical Boltzmann kinetic equation. It was shown that the particular minibands structure of the p-doped SLs leads to a plateau-like behavior in the conductivity as a function of the donor concentration and/or the Fermi level energy. In addition, it is shown that the Coulomb and exchange-correlation effects play an important role in these systems, since they determine the bending potential.

  1. Thermoluminescence of rare earth doped BaSO/sub 4/ phosphors and its applications

    Energy Technology Data Exchange (ETDEWEB)

    Nagpal, J.S.; Varadharajan, G. (Bhabha Atomic Research Centre, Bombay (India). Div. of Radiological Protection)

    1982-03-01

    Thermoluminescence of synthetic BaSO/sub 4/ samples individually doped with Y, La, Ce, Pr, Nd, Sm, Eu, Tb, Dy and Tm has been studied after ..gamma..- and microwave irradiations. BaSO/sub 4/:Eu has the highest response for ..gamma..-radiation while BaSO/sub 4/:Tb exhibits highest reduction in its ..gamma..-induced TL after exposure to microwave radiation (2425 +- 25 MHz). The reduction depends on the microwave radiant exposure and is independent of the irradiance level in the range 25-200 mW . cm/sup -2/ and hence can be useful for microwave dosimetry.

  2. Energy levels and far-infrared optical absorption of impurity doped semiconductor nanorings: Intense laser and electric fields effects

    Energy Technology Data Exchange (ETDEWEB)

    Barseghyan, M.G., E-mail: mbarsegh@ysu.am

    2016-11-10

    Highlights: • The electron-impurity interaction on energy levels in nanoring have been investigated. • The electron-impurity interaction on far-infrared absorption have been investigated. • The energy levels are more stable for higher values of electric field. - Abstract: The effects of electron-impurity interaction on energy levels and far-infrared absorption in semiconductor nanoring under the action of intense laser and lateral electric fields have been investigated. Numerical calculations are performed using exact diagonalization technique. It is found that the electron-impurity interaction and external fields change the energy spectrum dramatically, and also have significant influence on the absorption spectrum. Strong dependence on laser field intensity and electric field of lowest energy levels, also supported by the Coulomb interaction with impurity, is clearly revealed.

  3. Measuring and analyzing excitation-induced decoherence in rare-earth-doped optical materials

    International Nuclear Information System (INIS)

    Thiel, C W; Macfarlane, R M; Cone, R L; Sun, Y; Böttger, T; Sinclair, N; Tittel, W

    2014-01-01

    A method is introduced for quantitatively analyzing photon echo decay measurements to characterize excitation-induced decoherence resulting from the phenomenon of instantaneous spectral diffusion. Detailed analysis is presented that allows fundamental material properties to be extracted that predict and describe excitation-induced decoherence for a broad range of measurements, applications and experimental conditions. Motivated by the need for a method that enables systematic studies of ultra-low decoherence systems and direct comparison of properties between optical materials, this approach employs simple techniques and analytical expressions that avoid the need for difficult to measure and often unknown material parameters or numerical simulations. This measurement and analysis approach is demonstrated for the 3 H 6 to 3 H 4 optical transition of three thulium-doped crystals, Tm 3+ :YAG, Tm 3+ :LiNbO 3 and Tm 3+ :YGG, that are currently employed in quantum information and classical signal processing demonstrations where minimizing decoherence is essential to achieve high efficiencies and large signal bandwidths. These new results reveal more than two orders of magnitude variation in sensitivity to excitation-induced decoherence among the materials studied and establish that the Tm 3+ :YGG system offers the longest optical coherence lifetimes and the lowest levels of excitation-induced decoherence yet observed for any known thulium-doped material. (paper)

  4. Rare-earth doped transparent ceramics for spectral filtering and quantum information processing

    Energy Technology Data Exchange (ETDEWEB)

    Kunkel, Nathalie, E-mail: nathalie.kunkel@chimie-paristech.fr; Goldner, Philippe, E-mail: philippe.goldner@chimie-paristech.fr [PSL Research University, Chimie ParisTech–CNRS, Institut de Recherche de Chimie Paris, 11 rue Pierre et Marie Curie, 75005 Paris (France); Ferrier, Alban [PSL Research University, Chimie ParisTech–CNRS, Institut de Recherche de Chimie Paris, 11 rue Pierre et Marie Curie, 75005 Paris (France); Sorbonnes Universités, UPMC Univ Paris 06, 75005 Paris (France); Thiel, Charles W.; Cone, Rufus L. [Department of Physics, Montana State University, Bozeman, Montana 59717 (United States); Ramírez, Mariola O.; Bausá, Luisa E. [Departamento Física de Materiales and Instituto Nicolás Cabrera, Universidad Autónoma de Madrid, 28049 Madrid (Spain); Ikesue, Akio [World Laboratory, Mutsuno, Atsuta-ku, Nagoya 456-0023 (Japan)

    2015-09-01

    Homogeneous linewidths below 10 kHz are reported for the first time in high-quality Eu{sup 3+} doped Y {sub 2}O{sub 3} transparent ceramics. This result is obtained on the {sup 7}F{sub 0}→{sup 5}D{sub 0} transition in Eu{sup 3+} doped Y {sub 2}O{sub 3} ceramics and corresponds to an improvement of nearly one order of magnitude compared to previously reported values in transparent ceramics. Furthermore, we observed spectral hole lifetimes of ∼15 min that are long enough to enable efficient optical pumping of the nuclear hyperfine levels. Additionally, different Eu{sup 3+} concentrations (up to 1.0%) were studied, resulting in an increase of up to a factor of three in the peak absorption coefficient. These results suggest that transparent ceramics can be useful in applications where narrow and deep spectral holes can be burned into highly absorbing lines, such as quantum information processing and spectral filtering.

  5. Photoluminescence of rare-earth ion (Eu3+, Tm3+, and Er3+)-doped and co-doped ZnNb2O6 for solar cells

    Science.gov (United States)

    Gao, Sen-Pei; Qian, Yan-Nan; Wang, Biao

    2015-08-01

    Visible converted emissions produced at an excitation of 286 nm in ZnNb2O6 ceramics doped with rare-earth ions (RE = Eu3+, Tm3+, Er3+ or a combination of these ions) were investigated with the aim of increasing the photovoltaic efficiency of solar cells. The structure of RE:ZnNb2O6 ceramics was confirmed by x-ray diffraction patterns. The undoped ZnNb2O6 could emit a blue emission under 286-nm excitation, which is attributed to the self-trapped excitons’ recombination of the efficient luminescence centers of edge-shared NbO6 groups. Upon 286-nm excitation, Eu:ZnNb2O6, Tm:ZnNb2O6, and Er:ZnNb2O6 ceramics showed blue, green, and red emissions, which correspond to the transitions of 5D0 → 7FJ (J = 1-4) (Eu3+), 1G4 → 3H6 (Tm3+), and 2H11/2/4S3/2 → 4I15/2 (Er3+), respectively. The calculated CIE chromaticity coordinates of Eu:ZnNb2O6, Tm:ZnNb2O6, and Er:ZnNb2O6 are (0.50, 0.31), (0.14, 0.19), and (0.29, 0.56), respectively. RE ion-co-doped ZnNb2O6 showed a combination of characteristic emissions. The chromaticity coordinates of Eu/Tm:ZnNb2O6, Eu/Er:ZnNb2O6, and Tm/Er:ZnNb2O6 were calculated to be (0.29, 0.24), (0.45, 0.37), and (0.17, 0.25). Project supported by the National Natural Science Foundation of China (Grant Nos. 10572155 and 10732100) and the Research Fund for the Doctoral Program of Ministry of Education, China (Grant No. 20130171130003).

  6. Development of novel rare earth doped fluoride and oxide scintillators for two-dimensional imaging

    Czech Academy of Sciences Publication Activity Database

    Yoshikawa, A.; Yanagida, T.; Yokota, Y.; Kamada, K.; Kawaguchi, N.; Fukuda, K.; Yamazaki, A.; Watanabe, K.; Uritani, A.; Iguchi, T.; Boulon, G.; Nikl, Martin

    2011-01-01

    Roč. 29, č. 12 (2011), s. 1178-1182 ISSN 1002-0721 Grant - others:AV ČR(CZ) M100100910 Institutional research plan: CEZ:AV0Z10100521 Keywords : scintillator * gamma-ray detection * neutron detection * fluoride * Ce * Eu * rare earth Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 0.901, year: 2011

  7. Radio-luminescence efficiency and rare-earth dispersion in Tb-doped silica glasses

    Czech Academy of Sciences Publication Activity Database

    Fasoli, M.; Moretti, F.; Lauria, A.; Chiodini, N.; Vedda, A.; Nikl, Martin

    2007-01-01

    Roč. 42, - (2007), s. 784-787 ISSN 1350-4487 Institutional research plan: CEZ:AV0Z10100521 Keywords : sol-gel * scintillators * silica * rare earths * terbium Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.054, year: 2007

  8. Low-temperature photoluminescence in chalcogenide glasses doped with rare-earth ions

    Czech Academy of Sciences Publication Activity Database

    Kostka, Petr; Zavadil, Jiří; Iovu, M.S.; Ivanova, Z. G.; Furniss, D.; Seddon, A.B.

    2015-01-01

    Roč. 648, NOV 5 (2015), s. 237-243 ISSN 0925-8388 R&D Projects: GA ČR GAP106/12/2384 Institutional support: RVO:67985891 ; RVO:67985882 Keywords : chalcogenide glasses * rare earth ions * low-temperature photoluminescence * optical transmission Subject RIV: JH - Ceramics, Fire-Resistant Materials and Glass Impact factor: 3.014, year: 2015

  9. Monitoring the orientation of rare-earth-doped nanorods for flow shear tomography

    NARCIS (Netherlands)

    Kim, J.; Michelin, S.; Hilbers, M.; Martinelli, L.; Chaudan, E.; Amselem, G.; Fradet, E.; Boilot, J.-P.; Brouwer, A.M.; Baroud, C.N.; Peretti, J.; Gacoin, T.

    Rare-earth phosphors exhibit unique luminescence polarization features originating from the anisotropic symmetry of the emitter ion's chemical environment. However, to take advantage of this peculiar property, it is necessary to control and measure the ensemble orientation of the host particles with

  10. Characterization of rare-earth doped Si 3 N4 /SiC micro/nanocomposites

    Directory of Open Access Journals (Sweden)

    Peter Tatarko

    2010-03-01

    Full Text Available Influence of various rare-earth oxide additives (La2O3, Nd2O3, Sm2O3, Y2O3, Yb2O3 and Lu2O3 on the mechanical properties of hot-pressed silicon nitride and silicon nitride/silicon carbide micro/nano-composites has been investigated. The bimodal character of microstructures was observed in all studied materials where elongated β-Si3N4 grains were embedded in the matrix of much finer Si3N4 grains. The fracture toughness values increased with decreasing ionic radius of rare-earth elements. The fracture toughness of composites was always lower than that of monoliths due to their finer Si3N4/SiC microstructures. Similarly, the hardness and bending strength values increased with decreasing ionic radius of rare-earth elements either in monoliths or composites. On the other hand, the positive influence of finer microstructure of the composites on strength was not observed due to the present defects in the form of SiC clusters and non-reacted carbon zones. Wear resistance at room temperature also increased with decreasing ionic radius of rare-earth element. Significantly improved creep resistance was observed in case either of composite materials or materials with smaller radius of RE3+.

  11. Study of nickel doping effects on structural, electrical and optical properties of sprayed ZnO semiconductor layers

    Energy Technology Data Exchange (ETDEWEB)

    Mhamdi, A., E-mail: mmbb11112000@yahoo.fr; Ouni, B.; Amlouk, A.; Boubaker, K.; Amlouk, M.

    2014-01-05

    Highlights: • Proposing a complete original explanation to a simple and cheap technique. • Presenting an original combination of several referred characterization means. • Original analysis in terms of frequency–temperature dependence of AC conductivity. • A deep analysis within the correlated barrier hopping (CBH) model. • Outlining new conjoint correlation between Ni content and ZnO compound. -- Abstract: In the present study, zinc oxide doped nickel thin films (ZnO:Ni) at different percentage (1–3%) were deposited on glass substrates using a chemical spray technique. The effect of Ni concentration on the structural, electrical and optical properties of the ZnO:Ni thin films were investigated. The X-ray diffraction analysis shows that the films were well crystallized in würtzite phase with the crystallites preferentially oriented towards (0 0 2) direction parallel c-axis. On the other hand, the optical transmittance measurement was found to be higher than 80% and the optical band gap varies between 3.19 and 3.25 eV. The activation energy values calculated from DC conductivity and angular frequency relaxation are almost identical, indicating that the conduction mechanism is thermally activated by hopping between localized states. Moreover, the analysis of the frequency and temperature dependence of AC conductivity supports the correlated barrier hopping (CBH) model. Further, the value of the maximum height W{sub m} barrier was estimated using the Elliott model, which suggests that the charge carrier jumps over a potential barrier between the defect states. Finally, all results have been discussed in terms of the nickel doping concentration.

  12. Effect of Al doping on the magnetic and electrical properties of Zn(Cu)O based diluted magnetic semiconductors

    Science.gov (United States)

    Chakraborti, D.; Trichy, G.; Narayan, J.; Prater, J. T.; Kumar, D.

    2007-12-01

    The effect of Al doping on the magnetic properties of Zn(Cu)O based dilute magnetic semiconducting thin films has been systematically investigated. Epitaxial thin films have been deposited onto sapphire c-plane single crystals using pulsed laser deposition technique. X-ray diffraction and high resolution transmission electron microscopy studies show that the Zn(Cu,Al)O films are epitaxially grown onto (0001) sapphire substrates with a 30°/90° rotation in the basal plane. The large lattice misfit of the order of 16% is accommodated by matching integral multiples of lattice and substrate planes. In these large mismatch systems, the resulting films are fully relaxed following deposition of the first complete monolayer of ZnO (consistent with a critical thickness that is less than one monolayer). Magnetic hysteresis measurements indicate that the pure Zn(Cu)O thin films are ferromagnetic at room temperature. Doping with up to 5% Al (n type) does not significantly affect the ferromagnetism even though it results in an increase in carrier densities of more than 3 orders of magnitude, rising from 1×1017 to 1.5×1020 cm-3. However, for Al additions above 5%, a drop in net magnetization is observed. Annealing the films in an oxygen atmosphere at 600 °C also resulted in a dramatic drop in magnetic moment of the samples. These results strongly suggest that carrier induced exchange is not directly responsible for the magnetic properties of these materials. Rather, a defect mediated exchange mechanism needs to be invoked for this system.

  13. Organic semiconductor crystals.

    Science.gov (United States)

    Wang, Chengliang; Dong, Huanli; Jiang, Lang; Hu, Wenping

    2018-01-22

    Organic semiconductors have attracted a lot of attention since the discovery of highly doped conductive polymers, due to the potential application in field-effect transistors (OFETs), light-emitting diodes (OLEDs) and photovoltaic cells (OPVs). Single crystals of organic semiconductors are particularly intriguing because they are free of grain boundaries and have long-range periodic order as well as minimal traps and defects. Hence, organic semiconductor crystals provide a powerful tool for revealing the intrinsic properties, examining the structure-property relationships, demonstrating the important factors for high performance devices and uncovering fundamental physics in organic semiconductors. This review provides a comprehensive overview of the molecular packing, morphology and charge transport features of organic semiconductor crystals, the control of crystallization for achieving high quality crystals and the device physics in the three main applications. We hope that this comprehensive summary can give a clear picture of the state-of-art status and guide future work in this area.

  14. Luminescence of rare earth-doped Si-ZrO2 co-sputtered films

    International Nuclear Information System (INIS)

    Rozo, Carlos; Jaque, Daniel; Fonseca, Luis F.; Sole, Jose Garcia

    2008-01-01

    Er-doped Si-yttria-stabilized zirconia (YSZ) thin film samples were prepared by rf co-sputtering. Chemical composition of the samples was determined using energy-dispersive spectroscopy (EDS) and the structure of the films by X-ray diffraction (XRD). The samples were annealed to 700 deg. C. Photoluminescence (PL) measurements were performed for the visible and infrared. By exciting with the 488-nm-laser line the Er 3+ emissions 2 H 11/2 → 4 I 15/2 , 4 S 3/2 → 4 I 15/2 , 4 F 9/2 → 4 I 15/2 and a narrow 4 I 13/2 → 4 I 15/2 emission were observed. The 4 I 11/2 → 4 I 15/2 emissions for the same excitation wavelength were weak. Excitation wavelength dependence of the 4 I 13/2 → 4 I 15/2 emissions indicated that the emissions were due to a combination of energy transfer from Si nanoparticles (np) to Er ions and energy transfer from defects in the matrix to the Er ions for excitations resonant with the energy levels of such defects. 4 I 13/2 → 4 I 15/2 emission decay measurements show two decaying populations of Er ions according to their locations with respect to other ions or any non-radiative defects. 4 I 11/2 → 4 I 15/2 emission dependence on 4 I 13/2 → 4 I 15/2 emission showed that the former was possibly due to a combination of downconversion from higher levels of the Er ions, energy transfer from Si nanoparticles and upconversion transfer processes. We concluded that Er-doped Si-YSZ is a promising material for photonic applications being easily broadband excited using low-pumping powers

  15. Combinatorial Discovery and Optimization of the Composition, Doping and Morphology of New Oxide Semiconductors for Efficient Photoelectrochemical Water Splitting

    Energy Technology Data Exchange (ETDEWEB)

    Parkinson, Bruce A. [Univ. of Wyoming, Laramie, WY (United States); Jianghua, He [Univ. of Wyoming, Laramie, WY (United States)

    2015-01-06

    The increasing need for carbon free energy has focused renewed attention on solar energy conversion. Although photovoltaic cells excel at directly converting of solar energy to electricity, they do not directly produce stored energy or fuels that account for more than 75% of current energy use. Direct photoelectrolysis of water has the advantage of converting solar energy directly to hydrogen, an ideal non-carbon and nonpolluting energy carrier, by replacing both a photovoltaic array and an electrolysis unit with one potentially inexpensive device. Unfortunately no materials are currently known to efficiently photoelectrolyze water that are, efficient, inexpensive and stable under illumination in electrolytes for many years. Nanostructured semiconducting metal oxides could potentially fulfill these requirements, making them the most promising materials for solar water photoelectrolysis, however no oxide semiconductor has yet been discovered with all the required properties. We have developed a simple, high-throughput combinatorial approach to prepare and screen many multi component metal oxides for water photoelectrolysis activity. The approach uses ink jet printing of overlapping patterns of soluble metal oxide precursors onto conductive glass substrates. Subsequent pyrolysis produces metal oxide phases that are screened for photoelectrolysis activity by measuring photocurrents produced by scanning a laser over the printed patterns in aqueous electrolytes. Several promising and unexpected compositions have been identified.

  16. [Effect of annealing temperature on the crystallization and spectroscopic response of a small-molecule semiconductor doped in polymer film].

    Science.gov (United States)

    Yin, Ming; Zhang, Xin-Ping; Liu, Hong-Mei

    2012-11-01

    The crystallization properties of the perylene (EPPTC) molecules doped in the solid film of the derivative of polyfluorene (F8BT) at different annealing temperatures, as well as the consequently induced spectroscopic response of the exciplex emission in the heterojunction structures, were studied in the present paper. Experimental results showed that the phase separation between the small and the polymer molecules in the blend film is enhanced with increasing the annealing temperature, which leads to the crystallization of the EPPTC molecules due to the strong pi-pi stacking. The size of the crystal phase increases with increasing the annealing temperature. However, this process weakens the mechanisms of the heterojunction configuration, thus, the total interfacial area between the small and the polymer molecules and the amount of exciplex are reduced significantly in the blend film. Meanwhile, the energy transfer from the polymer to the small molecules is also reduced. As a result, the emission from the exciplex becomes weaker with increasing the annealing temperature, whereas the stronger emission from the polymer molecules and from the crystal phase of the small molecules can be observed. These experimental results are very important for understanding and tailoring the organic heterojunction structures. Furthermore, this provides photophysics for improving the performance of photovoltaic or solar cell devices.

  17. Insights on semiconductor-metal transition in indium-doped zinc oxide from x-ray photoelectron spectroscopy, time-of-flight secondary ion mass spectrometry and x-ray diffraction

    Energy Technology Data Exchange (ETDEWEB)

    Saw, K. G., E-mail: kgsaw@usm.my; Aznan, N. M., E-mail: nanieaz1004@gmail.com [Physics Programme, School of Distance Education, Universiti Sains Malaysia, 11800 Penang (Malaysia); Yam, F. K., E-mail: yamfk@yahoo.com; Ng, S. S., E-mail: shashiong@usm.my [Nano-optoelectronics Research Laboratory, Universiti Sains Malaysia, 11800 Penang (Malaysia); Pung, S. Y., E-mail: sypung@usm.my [School of Materials and Mineral Resources Eng., Universiti Sains Malaysia, 14300 Nibong Tebal (Malaysia)

    2016-07-06

    ZnO thin films doped with various amounts of In impurities were prepared by magnetron sputtering at a substrate temperature of 150°C. The shift in optical bandgap of the In-doped ZnO films is studied as a function of carrier concentration. Nominally doped ZnO films exhibit an increase in the measured optical band gap known as the Burstein-Moss effect. Dominant band gap narrowing is observed with increased doping. XPS and TOFSIMS analyses confirm that In is incorporated in the ZnO material. The In 3d peaks show that no metallic In is present as a result of heavy doping. The XRD phase analysis shows a preferential c-axis growth but a shift of the ZnO (002) peak to lower 2-theta values with increasing FWHM as the carrier concentration increases indicates the decline in the quality of crystallinity. An elongation of the c lattice constant is also observed and is likely to be caused by intersitital In as the amount of In dopants increases. The incorporation of In induces a semiconductor-metal transition between the carrier concentrations of 3.58 – 5.61×10{sup 19} cm{sup −3} and structural changes in the ZnO host material.

  18. Synthesis, structural and optical properties of pure and rare-earth ion doped TiO{sub 2} nanowire arrays by a facile hydrothermal technique

    Energy Technology Data Exchange (ETDEWEB)

    Bandi, Vengala Rao; Raghavan, Chinnambedu Murugesan; Grandhe, Bhaskar kumar; Kim, Sang Su [Department of Physics, Changwon National University, Changwon 641-773 (Korea, Republic of); Jang, Kiwan, E-mail: kwjang@changwon.ac.kr [Department of Physics, Changwon National University, Changwon 641-773 (Korea, Republic of); Shin, Dong-Soo [Department of Chemistry, Changwon National University, Changwon 641-773 (Korea, Republic of); Yi, Soung-Soo [Department of Photonics, Silla University, Busan 617-736 (Korea, Republic of); Jeong, Jung-Hyun [Department of Physics, Pukyong National University, Busan 608-737 (Korea, Republic of)

    2013-11-29

    Single crystalline pure and rare-earth metal ions (Eu{sup 3+} and Ce{sup 3+}) doped TiO{sub 2} nanowire arrays were prepared on conductive fluorine doped indium tin oxide substrates by a facile hydrothermal method. Initially the conditions and parameters were optimized to prepare the high quality TiO{sub 2} nanowire arrays in the absence of organic additives. The average diameter and length of the TiO{sub 2} nanowire were found to be ∼ 30–50 nm and ∼ 0.5–1.5 μm, respectively. The formations of rutile phase structure in all the samples were confirmed by x-ray diffractometric analysis while the transmission electron microscopy confirms the single crystallinity and the maximum orientation of growth direction along [001] for the as-grown TiO{sub 2} nanowire. The optical properties of all the samples were analyzed using photoluminescence spectroscopy. The photocatalytic properties of the pure and doped TiO{sub 2} were investigated for the decomposition of organic toludine blue-O dye under ultraviolet irradiation. The result demonstrates that the Ce{sup 3+}: TiO{sub 2} decomposed almost 90% of the organic dye within 80 min. - Highlights: • Rare-earth (RE) doped TiO{sub 2} nanowire arrays were prepared by hydrothermal method • RE doping enhanced the growth rate of TiO{sub 2} nanowire arrays • The catalysts used to check their photocatalytic activity by toludine blue-O dye • RE doped TiO2 act as unprecedented photocatalyst for organic dye decomposition.

  19. Structural and magentic characterization of rare earth and transition metal films grown on epitaxial buffer films on semiconductor substrates

    International Nuclear Information System (INIS)

    Farrow, R.F.C.; Parkin, S.S.P.; Speriosu, V.S.; Bezinge, A.; Segmuller, A.P.

    1989-01-01

    Structural and magnetic data are presented and discussed for epitaxial films of rare earth metals (Dy, Ho, Er) on LaF 3 films on the GaAs(TTT) surface and Fe on Ag films on the GaAs(001) surface. Both systems exhibit unusual structural characteristics which influence the magnetic properties of the metal films. In the case of rare earth epitaxy on LaF 3 the authors present evidence for epitaxy across an incommensurate or discommensurate interface. Coherency strain is not transmitted into the metal which behaves much like bulk crystals of the rare earths. In the case of Fe films, tilted epitaxy and long-range coherency strain are confirmed by X- ray diffractometry. Methods of controlling some of these structural effects by modifying the epitaxial structures are presented

  20. Thermoluminescence of double fluorides doped with rare earths; Termoluminiscencia de fluoruros dobles dopados con tierras raras

    Energy Technology Data Exchange (ETDEWEB)

    Azorin N, J.; Sanchez R, A. [UAM-I, 09340 Mexico D.F. (Mexico); Khaidukov, N.M. [Kurnakov Institute of General and Inorganic Chemistry, 119991 Moscow (Russian Federation)

    2004-07-01

    In this work the thermoluminescent characteristics of double fluorides K{sub 2}YF{sub 5}, K{sub 2}GdF{sub 5} and K{sub 2}LuF{sub 5} doped are presented with Tb{sup 3+}, studied in the interval of temperature from 30 to 400 C. The materials that presented better answer to the irradiation with particles beta and with ultraviolet light they were the K{sub 2}YF{sub 5}: Tb (1% at. Tb{sup 3+}) and the K{sub 2}LuF{sub 5}: Tb (1% at. Tb{sup 3+}); while the K{sub 2}YF{sub 5}: Tb to high concentrations (10% and 20% at. Tb{sup 3+}) and the K{sub 2}LuF{sub 5}: Tb (1% at. Tb{sup 3+}) and the K{sub 2}LuF{sub 5}: Tb (1% at. Tb{sup 3+}) they presented an acceptable answer in front of the gamma radiation. The intensity of the Tl answer induced in these materials is a decisive factor to continue studying its dosimetric characteristics, what allows to consider them as the base for the development of potential materials to use them in the dosimetry of beta particles, of the UV light of the gamma radiation using the thermoluminescence method. (Author)

  1. Luminescence properties of rare earth doped metal oxide nanostructures: A case of Eu-ZnO

    Energy Technology Data Exchange (ETDEWEB)

    Sahu, D. [School of Basic Sciences, Centurion University of Technology and Management, Odisha-752050 India (India); Acharya, B. S. [Department of Physics, C.V. Raman College of Engineering, Bhubaneswar, Odisha, India-752054 (India); Panda, N. R., E-mail: nihar@iitbbs.ac.in [School of Basic Sciences, Indian Institute of Technology Bhubaneswar, Odisha-751013 India (India)

    2016-05-06

    The present study reports the growth and luminescence properties of Eu doped ZnO nanostructures. The experiment has been carried out by synthesizing the materials by simple wet-chemical method. X-ray diffraction (XRD) studies show expansion of ZnO lattice with the incorporation of Eu ions which has been confirmed from the appearance of Eu{sub 2}O{sub 3} as a minor phase in the XRD pattern. The estimation of crystallite size from XRD results matches closely with the results obtained from transmission electron microscopy. Further, these results show the formation of nanosized Eu-ZnO particles of average size around 60 nm stacked on each other. FTIR studies show the presence of both Zn-O and Eu-O modes in the spectra supporting the results obtained from XRD. The interesting results obtained from photoluminescence (PL) measurements show the presence of both band edge emission in UV region and the defect emissions in violet, blue and green region. The appearance of {sup 5}D{sub 0}→{sup 7}F{sub J} transitions of Eu{sup 3+} ions in red region clearly suggests the possible occurrence of energy transfer between the energy states of ZnO host and Eu{sup 3+} ions.

  2. Oxygen influence on luminescence properties of rare-earth doped NaLaF{sub 4}

    Energy Technology Data Exchange (ETDEWEB)

    Tuomela, A., E-mail: anu.tuomela@oulu.fi [Research Center of Molecular Materials, University of Oulu, P.O. Box 3000, FIN-90014 (Finland); Pankratov, V., E-mail: vladimirs.pankratovs@oulu.fi [Research Center of Molecular Materials, University of Oulu, P.O. Box 3000, FIN-90014 (Finland); Sarakovskis, A.; Doke, G.; Grinberga, L. [Institute of Solid State Physics, University of Latvia, 8 Kengaraga, LV-1063 Riga (Latvia); Vielhauer, S. [Institute of Physics, University of Tartu, Riia 142, Tartu 51014 (Estonia); Huttula, M. [Research Center of Molecular Materials, University of Oulu, P.O. Box 3000, FIN-90014 (Finland)

    2016-11-15

    Luminescence properties of erbium and europium doped NaLaF{sub 4} with different oxygen content have been studied. Vacuum ultraviolet (VUV) excitation luminescence spectroscopy technique has been applied by using synchrotron radiation excitation. It was found that oxygen impurity leads to significant degradation of Er{sup 3+} or Eu{sup 3+} emission under VUV excitation. The intensive O{sup 2−}–Er{sup 3+} charge transfer excitation band has been detected from oxygen abundant NaLaF{sub 4} in the 150–165 nm spectral range. This band reveals a competing absorption mechanism in oxygen containing NaLaF{sub 4}. It is clearly demonstrated that one reason for the Er{sup 3+} emission degradation in oxygen abundant NaLaF{sub 4} is strong suppression of 4f–5d transitions in Er{sup 3+} ion. The degradation of the Eu{sup 3+} emission under VUV excitation was explained by diminishing of F{sup −}–Eu{sup 3+} charge transfer absorption band as well as by competing relaxation centers in the oxygen abundant NaLaF{sub 4}.

  3. Enhancing photovoltaic performance of dye-sensitized solar cell by rare-earth doped oxide of Lu2O3:(Tm3+, Yb3+)

    International Nuclear Information System (INIS)

    Li Qingbei; Lin Jianming; Wu Jihuai; Lan Zhang; Wang Yue; Peng Fuguo; Huang Miaoliang

    2011-01-01

    Highlights: → Tm 3+ /Yb 3+ codoped oxide is introduced into the TiO 2 film in dye-sensitized solar cell. → The RE improves light harvest via conversion luminescence and increases photocurrent. → The RE elevates the oxide film energy level and increases the cell photovoltage. → The cell efficiency is increased by 11.1% compared to the cell lacking of RE doping. - Abstract: In order to increase of the photocurrent, photovoltage and energy conversion efficiency of dye-sensitized solar cell (DSSC), rare-earth doped oxide of Lu 2 O 3 :(Tm 3+ , Yb 3+ ) is prepared and introduced into the TiO 2 film in the DSSC. As a luminescence medium, Lu 2 O 3 :(Tm 3+ , Yb 3+ ) improves incident light harvest via a conversion luminescence process and increases photocurrent; as a p-type dopant, the rare-earth ions elevate the energy level of the oxide film and increase the photovoltage. Under a simulated solar light irradiation of 100 mW cm -2 , the light-to-electric energy conversion efficiency of the DSSC with Lu 2 O 3 :(Tm 3+ , Yb 3+ ) doping reaches 6.63%, which is increased by 11.1% compared to the DSSC without Lu 2 O 3 :(Tm 3+ , Yb 3+ ) doping.

  4. Luminescent rare earth vanadate nanoparticles doped with Eu3+ and Bi3 for sensing and imaging applications

    Science.gov (United States)

    Escudero, Alberto; Carrillo-Carrión, Carolina; Zyuzin, Mikhail; Hartmann, Raimo; Ashraf, Sumaira; Parak, Wolfgang J.

    2016-03-01

    Nanoparticles (NPs) are attracting interest in nanomedicine due to their potential medical applications, ranging from optical biolabels and contrast agents for magnetic resonance imaging to carriers for drug and gene delivery for disease therapy.[1] Rare earth (RE) based nanophosphors exhibit important advantages compared with other available luminescent materials, such as quantum dots and nanostructures functionalized with organic dyes, due to their lower toxicities, photostabilities, high thermal and chemical stabilities, high luminescence quantum yields, and sharp emission bands.[2] Yttrium orthovanadate NPs doped with Eu3+ and Bi3+, functionalized with poly acryl acid (PAA), and excitable by near-ultraviolet light have been synthesized by homogeneous precipitation at 120 °C from solutions of rare earth precursors (yttrium acetylacetonate and europium nitrate), bismuth nitrate, sodium orthovanadate, and PAA, in an ethylene glycol/water mixture. Quasispheres with sizes from 93 to 51 nm were obtained. The as synthesized NPs were already functionalized with PAA. The NPs showed the typical red luminescence of Eu3+, which can be excited with near-UV light through an energy transfer from the vanadate anion. The presence of Bi3+ shifts the maximum of the broad excitation band from 280 nm to 342 nm. This excitation path is much more efficient than the direct excitation of the Eu3+ electronic levels, and results in a much higher luminescence. The NPs can be uptaken by HeLa cells, and are eventually located in the lysosomes after being internalized. Finally, the functionalization with PAA provides -COOH anchors for adding functional ligands of biomedical interest that can be used for sensing applications.

  5. Syntheses and characterizations of rare earth doped phospho-silicated apatites: application to nuclear waste confinement

    International Nuclear Information System (INIS)

    Boyer, Laurent

    1998-01-01

    Apatite matrices have been developed for the conditioning of actinides from spent fuels of PWR reactors. Silicated apatites (britholites) containing actinides and lanthanides have been discovered in the natural environment. Synthetic analogues of these britholites can be obtained by solid-solid reaction at high temperature. The compounds of the solid solution of fluorinated britholites are synthesized by the double substitution of (Ca 2+ , PO 4 3- ) by (Ln 3+ , SiO 4 4- ). Trivalent lanthanides are chemical analogues of trivalent actinides. The synthesis was performed with La, Nd and Eu. This study allows to demonstrate that the chemical immobilization comes from the fixation of rare earths at the atomic scale, thanks to their participation to the mineral structure. In part 1, the criteria for the formulation of a matrix for the conditioning of separate radionuclides are given. The structure and the different methods of apatite preparation are shown. Part 2 treats of the study of the solid solution, of the elaboration of the Ca 9 Nd 1 (SiO 4 ) 5 F 2 ceramic and of its physico chemical characterization. The last part deals with the localization of rare earths in the apatite structure, determined by europium luminescence and X-ray diffraction on monocrystal. (J.S.) [fr

  6. Towards atomic scale engineering of rare-earth-doped SiAlON ceramics through aberration-corrected scanning transmission electron microscopy

    International Nuclear Information System (INIS)

    Yurdakul, Hilmi; Idrobo, Juan C.; Pennycook, Stephen J.; Turan, Servet

    2011-01-01

    Direct visualization of rare earths in α- and β-SiAlON unit-cells is performed through Z-contrast imaging technique in an aberration-corrected scanning transmission electron microscope. The preferential occupation of Yb and Ce atoms in different interstitial locations of β-SiAlON lattice is demonstrated, yielding higher solubility for Yb than Ce. The triangular-like host sites in α-SiAlON unit cell accommodate more Ce atoms than hexagonal sites in β-SiAlON. We think that our results will be applicable as guidelines for many kinds of rare-earth-doped materials.

  7. Computer modelling of defect structure and rare earth doping in LiCaAlF sub 6 and LiSrAlF sub 6

    CERN Document Server

    Amaral, J B; Valerio, M E G; Jackson, R A

    2003-01-01

    This paper describes a computational study of the mixed metal fluorides LiCaAlF sub 6 and LiSrAlF sub 6 , which have potential technological applications when doped with a range of elements, especially those from the rare earth series. Potentials are derived to represent the structure and properties of the undoped materials, then defect properties are calculated, and finally solution energies for rare earth elements are calculated, enabling preferred dopant sites and charge compensation mechanisms to be predicted.

  8. Growth of doped and pure monocrystalline fibers and gradient crystals of REMO_4 compounds (RE = rare earths and M = Nb and Ta)

    International Nuclear Information System (INIS)

    Octaviano, E.S.; Levada, C.L.; Missiato, O.; Semenzato, M.J.; Silva, R.A.; Andreeta, J.P.

    2009-01-01

    A desirable alternative for a faster development, characterization and application of material of technological interest has been the growth of single crystal fibers by LHPG - Laser Heated Pedestal Growth. In this work it was reported the growth of pure, doped and gradient single crystal fibers of the chemical formulation REMO_4 (M = Nb e Ta, e RE= Rare Earth), characterized through primary techniques such as X-Ray and optical spectroscopy. (author)

  9. Low-temperature liquid-phase epitaxy and optical waveguiding of rare-earth-ion-doped KY(WO4)2 thin layers

    NARCIS (Netherlands)

    Romanyuk, Y.E.; Utke, I.; Ehrentraut, D.; Apostolopoulos, V.; Pollnau, Markus; Garcia-Revilla, S.; Valiente, B.

    2004-01-01

    Crystalline $KY(WO_{4})_{2}$ thin layers doped with different rare-earth ions were grown on b-oriented, undoped $KY(WO_{4})_{2}$ substrates by liquid-phase epitaxy employing a low-temperature flux. The ternary chloride mixture of NaCl, KCl, and CsCl with a melting point of 480°C was used as a

  10. Cobalt-doped ZnO as dilute magnetic semiconductor; Cobalt dotiertes ZnO als verduennter magnetischer Halbleiter

    Energy Technology Data Exchange (ETDEWEB)

    Gacic, Milan

    2009-04-24

    Dilute magnetic semiconductors (DMS) are technologically promising materials that show ferromagnetic as well as semiconducting properties. These are one of the crucial compounds concerning the development of spintronic devices. The main problem so far ist that for applications the Curie temperature of most of the DMS compounds is much too low. However, DMS compounds based on ZnO as Zn{sub 1-x}Co{sub x}O seem to show ferromagnetism above room temperature, but the ferromagnetic exchange is not fully understood. Intensive experimental investigations need to be done. In the course of this theses Zn{sub 0.95}Co{sub 0.05}O thin films were fabricated by pulsed laser deposition and investigated concerning their magnetic, magnetoelectric and structural properties in order to understand the ferromagnetism in this material. Different experimental methods have been used, as magnetometry, X-ray diffraction (XRD), X-ray magnetic circular dichroism (XMCD), electron spin resonance (ESR) and magnetoelectric transport measurements. At special preparation conditions, where a high defect density is induced, the samples are clearly ferromagnetic above room temperature with a saturation magnetization of 2 {mu}{sub b}/Co and a remanence of 90%. Electrical transport measurements show a clear magnetoresistance as well as a anomalous Hall effect. The anomalous Hall effect rises with the magnetization indicating intrinsic ferromagnetism and a certain degree of spin polarization. As the ferromagnetism disappears with rising charge carrier density the ferromagnetic interaction cannot be mediated by the conduction electrons. A more precise evaluation of the magnetoelectric results shows that there is an additional conducting impurity band which could even be spinpolarized. So there are indications that the ferromagnetism is due to magnetic polarons. Some of the structural and magnetometric results as well as the electron spin resonance measurements suggest an additional extrinsic contribution

  11. Dynamic hyperfine interactions in {sup 111}In({sup 111}Cd)-doped ZnO semiconductor: PAC results supported by ab initio calculations

    Energy Technology Data Exchange (ETDEWEB)

    Munoz, Emiliano L., E-mail: munoz@fisica.unlp.edu.ar [Departamento de Fisica and Instituto de Fisica La Plata (IFLP, CONICET La Plata), Facultad de Ciencias Exactas, Universidad Nacional de La Plata, CC 67, 1900 La Plata (Argentina); Mercurio, Marcio E.; Cordeiro, Moacir R.; Pereira, Luciano F.D.; Carbonari, Artur W. [Instituto de Pesquisas Energeticas y Nucleares-IPEN-CNEN/SP, Sao Paulo (Brazil); Renteria, Mario [Departamento de Fisica and Instituto de Fisica La Plata (IFLP, CONICET La Plata), Facultad de Ciencias Exactas, Universidad Nacional de La Plata, CC 67, 1900 La Plata (Argentina)

    2012-08-15

    In this work, we present results of Time-Differential {gamma}-{gamma} Perturbed-Angular-Correlations (PAC) experiments performed in {sup 111}Cd-doped ZnO semiconductor. The PAC technique has been applied in order to characterize the electric-field-gradient (EFG) tensor at ({sup 111}In (EC){yields}) {sup 111}Cd nuclei located, as was later demonstrated, at defect-free cation sites of the ZnO host structure. The PAC experiments were performed in the temperature range of 77-1075 K. At first glance, the unexpected presence of low-intensity dynamic hyperfine interactions was observed, which were analyzed with a perturbation factor based on the Baeverstam and Othaz model. The experimental EFG results were compared with ab initio calculations performed with the Full-Potential Augmented Plane Wave plus local orbital (FP-APW+lo) method, in the framework of the Density Functional Theory (DFT), using the Wien2K code. The presence of the dynamic hyperfine interactions has been analyzed enlightened by the FP-APW+lo calculations of the EFG performed as a function of the charge state of the cell. We could correlate the large strength of the dynamic hyperfine interaction with the strong variation of the EFG due to changes in the electronic charge distribution in the Cd vicinity during the time-window of the PAC measurement. It was also revealed that the Cd impurity decays to a final stable neutral charge state (Cd{sup 2+}) fast enough (in few ns) to produce the nearly undamped observed PAC spectra.

  12. Structural, optical and vibrational studies of Na{sup +} doped Cd{sub 0.8}Zn{sub 0.2}S semiconductor compounds

    Energy Technology Data Exchange (ETDEWEB)

    Yellaiah, G., E-mail: johngolluri@yahoo.com; Hadasa, K.; Nagabhushanam, M., E-mail: mamidala_nb@yahoo.com

    2013-12-25

    Graphical abstract: FTIR spectra of Cd{sub 0.8}Zn{sub 0.2}S: N{sub x} (x = 0.2 mol%). Highlights: •The energy band gaps of Cd{sub 0.8}Zn{sub 02}S: Nasamples were estimated. •Density and porosity percentages were calculated. •From the FTIR study CdS and ZnS stretching bonds were detected. -- Abstract: Cd{sub 0.8}Zn{sub 0.2}S semiconductor powders doped with different amounts of sodium have been synthesized by controlled co-precipitation technique. X-ray diffraction (XRD), Scanning electron microscope (SEM), Optical absorption and Fourier transform infrared spectroscope (FTIR) studies have been done on all these samples. XRD studies have revealed that the samples are polycrystalline with an average crystallite size ranging from 29 to 55 nm and they crystallize in the hexagonal form with wurtzite structure. The optical measurements revealed that the samples possess direct band gap and the band gap increases with an increase in the dopant concentration. The vibrational modes of Cd–S and Zn–S were obtained from FTIR studies and found to be at 812–618 cm{sup −1} respectively. Experimental and theoretical (XRD) densities were calculated and analyzed. Density from XRD and porosity in percentage varied from 92% to 94% and 5% to 8% respectively. The elemental analysis of the compounds was done by energy dispersive spectroscopy (EDS) and found that the cadmium, zinc, sulphur and sodium elements were present in the compound as per the composition taken. From the theoretical estimations it is understood that the dopant (Na) occupies the interstitial of CdZnS.

  13. Nitrogen doped nanocrystalline semiconductor metal oxide: An efficient UV active photocatalyst for the oxidation of an organic dye using slurry Photoreactor.

    Science.gov (United States)

    Ramachandran, Saranya; Sivasamy, A; Kumar, B Dinesh

    2016-12-01

    Water pollution is a cause for serious concern in today's world. A major contributor to water pollution is industrial effluents containing dyes and other organic molecules. Waste water treatment has become a priority area in today's applied scientific research as it seeks to minimize the toxicity of the effluents being discharged and increase the possibility of water recycling. An efficient and eco-friendly way of degrading toxic molecules is to use nano metal-oxide photocatalysts. The present study aims at enhancing the photocatalytic activity of a semiconductor metal oxide by doping it with nitrogen. A sol-gel cum combustion method was employed to synthesize the catalyst. The prepared catalyst was characterized by FT-IR, XRD, UV-DRS, FESEM and AFM techniques. UV-DRS result showed the catalyst to possess band gap energy of 2.97eV, thus making it active in the UV region of the spectrum. Its photocatalytic activity was evaluated by the degradation of a model pollutant-Orange G dye, under UV light irradiation. Preliminary experiments were carried out to study the effects of pH, catalyst dosage and initial dye concentration on the extent of dye degradation. Kinetic studies revealed that the reaction followed pseudo first order kinetics. The effect of electrolytes on catalyst efficiency was also studied. The progress of the reaction was monitored by absorption studies and measuring the reduction in COD. The catalyst thus prepared was seen to have a high photocatalytic efficiency. The use of this catalyst is a promising means of waste water treatment. Copyright © 2016 Elsevier Inc. All rights reserved.

  14. Enhancement of single particle rare earth doped NaYF4: Yb, Er emission with a gold shell

    International Nuclear Information System (INIS)

    Li, Ling; Green, Kory; Hallen, Hans; Lim, Shuang Fang

    2015-01-01

    Upconversion of infrared light to visible light has important implications for bioimaging. However, the small absorption cross-section of rare earth dopants has limited the efficiency of these anti-Stokes nanomaterials. We present enhanced excitation absorption and single particle fluorescent emission of sodium yttrium fluoride, NaYF 4 : Yb, Er based upconverting nanoparticles coated with a gold nanoshell through surface plasmon resonance. The single gold-shell coated nanoparticles show enhanced absorption in the near infrared, enhanced total emission intensity, and increased green relative to red emission. We also show differences in enhancement between single and aggregated gold shell nanoparticles. The surface plasmon resonance of the gold-shell coated nanoparticle is shown to be dependent on the shell thickness. In contrast to other reported results, our single particle experimental observations are corroborated by finite element calculations that show where the green/red emission enhancement occurs, and what portion of the enhancement is due to electromagnetic effects. We find that the excitation enhancement and green/red emission ratio enhancement occurs at the corners and edges of the doped emissive core. (paper)

  15. Thermochemistry of rare earth doped uranium oxides LnxU1-xO2-0.5x+y (Ln = La, Y, Nd)

    Science.gov (United States)

    Zhang, Lei; Navrotsky, Alexandra

    2015-10-01

    Lanthanum, yttrium, and neodymium doped uranium dioxide samples in the fluorite structure have been synthesized, characterized in terms of metal ratio and oxygen content, and their enthalpies of formation measured by high temperature oxide melt solution calorimetry. For oxides doped with 10-50 mol % rare earth (Ln) cations, the formation enthalpies from constituent oxides (LnO1.5, UO2 and UO3 in a reaction not involving oxidation or reduction) become increasingly exothermic with increasing rare earth content, while showing no significant dependence on the varying uranium oxidation state. The oxidation enthalpy of LnxU1-xO2-0.5x+y is similar to that of UO2 to UO3 for all three rare earth doped systems. Though this may suggest that the oxidized uranium in these systems is energetically similar to that in the hexavalent state, thermochemical data alone can not constrain whether the uranium is present as U5+, U6+, or a mixture of oxidation states. The formation enthalpies from elements calculated from the calorimetric data are generally consistent with those from free energy measurements.

  16. Analysis of electrical and microstructural characteristics of a ZnO-based varistor doped with rare earth oxide; Analise das caracteristicas microestruturais e eletricas de um varistor a base de ZnO dopado com oxidos de terras raras

    Energy Technology Data Exchange (ETDEWEB)

    Andrade, J.M. de; Dias, R.; Furtado, J.G. de M. [Centro de Pesquisas de Energia Eletrica (CEPEL), Rio de Janeiro, RJ (Brazil); Assuncao, F.C.R. [Pontificia Univ. Catolica do Rio de Janeiro (PUC/Rio), RJ (Brazil)

    2010-07-01

    Varistor is a semiconductor device, used in the protection of electrical systems, characterized to have a high no-linear electric resistance. Its properties are directly dependents of its chemical composition and microstructural characteristics. In this work were analyzed microstructural and electrical characteristics of a ZnO-based varistor doped with rare earth oxide, with chemical composition (mol%) 98,5.ZnO - 0,3.Pr{sub 6}O{sub 11} - 0,2.Dy{sub 2}O{sub 3} - 0,9.Co{sub 2}O{sub 3} - 0,1.Cr{sub 2}O{sub 3}. X-ray diffraction for phase characterization, scanning electron microscopy and energy dispersive X-ray spectroscopy were used for microstructural analysis. Measurement of average grain size and electrical and dielectric characteristics complete the characterization. The results show the formation of biphasic microstructure and with high densification, presenting relevant varistors characteristics but that would need improvements.(author)

  17. Earth

    CERN Document Server

    Carter, Jason

    2017-01-01

    This curriculum-based, easy-to-follow book teaches young readers about Earth as one of the eight planets in our solar system in astronomical terms. With accessible text, it provides the fundamental information any student needs to begin their studies in astronomy, such as how Earth spins and revolves around the Sun, why it's uniquely suitable for life, its physical features, atmosphere, biosphere, moon, its past, future, and more. To enhance the learning experience, many of the images come directly from NASA. This straightforward title offers the fundamental information any student needs to sp

  18. A single-source solid-precursor method for making eco-friendly doped semiconductor nanoparticles emitting multi-color luminescence.

    Science.gov (United States)

    Manzoor, K; Aditya, V; Vadera, S R; Kumar, N; Kutty, T R N

    2007-02-01

    A novel synthesis method is presented for the preparation of eco-friendly, doped semiconductor nanocrystals encapsulated within oxide-shells, both formed sequentially from a single-source solid-precursor. Highly luminescent ZnS nanoparticles, in situ doped with Cu(+)-Al3+ pairs and encapsulated with ZnO shells are prepared by the thermal decomposition of a solid-precursor compound, zinc sulfato-thiourea-oxyhydroxide, showing layered crystal structure. The precursor compound is prepared by an aqueous wet-chemical reaction involving necessary chemical reagents required for the precipitation, doping and inorganic surface capping of the nanoparticles. The elemental analysis (C, H, N, S, O, Zn), quantitative estimation of different chemical groups (SO4(2-) and NH4(-)) and infrared studies suggested that the precursor compound is formed by the intercalation of thiourea, and/or its derivatives thiocarbamate (CSNH2(-)), dithiocarbamate (CS2NH2(-)), etc., and ammonia into the gallery space of zinc-sulfato-oxyhydroxide corbel where the Zn(II) ions are both in the octahedral as well as tetrahedral coordination in the ratio 3 : 2 and the dopant ions are incorporated within octahedral voids. The powder X-ray diffraction of precursor compound shows high intensity basal reflection corresponding to the large lattice-plane spacing of d = 11.23 angstroms and the Rietveld analysis suggested orthorhombic structure with a = 9.71 angstroms, b = 12.48 angstroms, c = 26.43 angstroms, and beta = 90 degrees. Transmission electron microscopy studies show the presence of micrometer sized acicular monocrystallites with prismatic platy morphology. Controlled thermolysis of the solid-precursor at 70-110 degrees C leads to the collapse of layered structure due to the hydrolysis of interlayer thiourea molecules or its derivatives and the S2- ions liberated thereby reacts with the tetrahedral Zn(II) atoms leading to the precipitation of ZnS nanoparticles at the gallery space. During this process

  19. Structural elucidation and magnetic behavior evaluation of rare earth (La, Nd, Gd, Tb, Dy) doped BaCoNi-X hexagonal nano-sized ferrites

    Energy Technology Data Exchange (ETDEWEB)

    Majeed, Abdul, E-mail: abdulmajeed2276@gmail.com [Department of Physics, The Islamia University of Bahawalpur, Bahawalpur 63100 (Pakistan); Khan, Muhammad Azhar, E-mail: azhar.khan@iub.edu.pk [Department of Physics, The Islamia University of Bahawalpur, Bahawalpur 63100 (Pakistan); Raheem, Faseeh ur; Hussain, Altaf; Iqbal, F. [Department of Physics, The Islamia University of Bahawalpur, Bahawalpur 63100 (Pakistan); Murtaza, Ghulam [Centre for Advanced Studies in Physics, Government College University, Lahore 54000 (Pakistan); Akhtar, Majid Niaz [Department of Physics, COMSATS Institute of Information Technology, Lahore 54000 (Pakistan); Shakir, Imran [Deanship of Scientific Research, College of Engineering, King Saud University, PO Box 800, Riyadh 11421 (Saudi Arabia); Warsi, Muhammad Farooq [Department of Chemistry, The Islamia University of Bahawalpur, Bahawalpur 63100 (Pakistan)

    2016-06-15

    Rare-earth (RE=La{sup 3+}, Nd{sup 3+}, Gd{sup 3+}, Tb{sup 3+}, Dy{sup 3+}) doped Ba{sub 2}NiCoRE{sub x}Fe{sub 28−x}O{sub 46} (x=0.25) hexagonal ferrites were synthesized for the first time via micro-emulsion route, which is a fast chemistry route for obtaining nano-sized ferrite powders. These nanomaterials were investigated by X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FTIR), as well as vibrating sample magnetometer (VSM). The XRD analysis exhibited that all the samples crystallized into single X-type hexagonal phase. The crystalline size calculated by Scherrer's formula was found in the range 7–19 nm. The variations in lattice parameters elucidated the incorporation of rare-earth cations in these nanomaterials. FTIR absorption spectra of these X-type ferrites were investigated in the wave number range 500–2400 cm{sup −1.} Each spectrum exhibited absorption bands in the low wave number range, thereby confirming the X-type hexagonal structure. The enhancement in the coercivity was observed with the doping of rare-earth cations. The saturation magnetization was lowered owing to the redistribution of rare-earth cations on the octahedral site (3b{sub VI}). The higher values of coercivity (664–926 Oe) of these nanomaterials suggest their use in longitudinal recording media. - Graphical abstract: Nano-sized rare-earth (RE=La{sup 3+}, Nd{sup 3+}, Gd{sup 3+}, Tb{sup 3+}, Dy{sup 3+}) doped Ba{sub 2}NiCoRE{sub x}Fe{sub 28−x}O{sub 46} (x=0.25) hexagonal ferrites were synthesized for the first time via micro-emulsion route and the crystallite size was found in the range 7–19 nm. The enhancement in the coercivity was observed with the doping of rare-earth cations. The higher values of coercivity (664–926 Oe) of these nanomaterials suggest their use in longitudinal recording media. - Highlights: • Micro-emulsion route was used to synthesize Ba{sub 2}NiCoRE{sub x}Fe{sub 28−x}O{sub 46} ferrites. • The crystallite size was found

  20. Structural elucidation and magnetic behavior evaluation of rare earth (La, Nd, Gd, Tb, Dy) doped BaCoNi-X hexagonal nano-sized ferrites

    International Nuclear Information System (INIS)

    Majeed, Abdul; Khan, Muhammad Azhar; Raheem, Faseeh ur; Hussain, Altaf; Iqbal, F.; Murtaza, Ghulam; Akhtar, Majid Niaz; Shakir, Imran; Warsi, Muhammad Farooq

    2016-01-01

    Rare-earth (RE=La 3+ , Nd 3+ , Gd 3+ , Tb 3+ , Dy 3+ ) doped Ba 2 NiCoRE x Fe 28−x O 46 (x=0.25) hexagonal ferrites were synthesized for the first time via micro-emulsion route, which is a fast chemistry route for obtaining nano-sized ferrite powders. These nanomaterials were investigated by X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FTIR), as well as vibrating sample magnetometer (VSM). The XRD analysis exhibited that all the samples crystallized into single X-type hexagonal phase. The crystalline size calculated by Scherrer's formula was found in the range 7–19 nm. The variations in lattice parameters elucidated the incorporation of rare-earth cations in these nanomaterials. FTIR absorption spectra of these X-type ferrites were investigated in the wave number range 500–2400 cm −1. Each spectrum exhibited absorption bands in the low wave number range, thereby confirming the X-type hexagonal structure. The enhancement in the coercivity was observed with the doping of rare-earth cations. The saturation magnetization was lowered owing to the redistribution of rare-earth cations on the octahedral site (3b VI ). The higher values of coercivity (664–926 Oe) of these nanomaterials suggest their use in longitudinal recording media. - Graphical abstract: Nano-sized rare-earth (RE=La 3+ , Nd 3+ , Gd 3+ , Tb 3+ , Dy 3+ ) doped Ba 2 NiCoRE x Fe 28−x O 46 (x=0.25) hexagonal ferrites were synthesized for the first time via micro-emulsion route and the crystallite size was found in the range 7–19 nm. The enhancement in the coercivity was observed with the doping of rare-earth cations. The higher values of coercivity (664–926 Oe) of these nanomaterials suggest their use in longitudinal recording media. - Highlights: • Micro-emulsion route was used to synthesize Ba 2 NiCoRE x Fe 28−x O 46 ferrites. • The crystallite size was found in the range 7–19 nm. • The rare-earth incorporation enhanced the coercivity (664–926 Oe).

  1. Synthesis and properties of the diluted magnetic semiconductor ZnO doped with nickel ions by combustion reaction; Sintese e propriedades do semicondutor magnetico diluido ZnO dopado com ions de niquel por meio da reacao de combustao

    Energy Technology Data Exchange (ETDEWEB)

    Morais, A.; Torquato, R.A.; Costa, A.C.F.M, E-mail: m.artur@hotmail.com.br [Universidade Federal da Paraiba (UFPB), Joao Pessoa, PB (Brazil). Departamento de Engenharia de Materiais; Universidade Federal de Campina Grande (UFCG), PB (Brazil). Departamento de Engenharia de Materiais

    2017-10-01

    One of the greatest challenges for the development of the spintronics this creation of materials having semiconductivity and magnetism at above room temperatures, enabling the creation of devices with greater processing speeds. This work aims to synthesize by combustion reaction semiconductor ZnO doped with nickel ions at a concentration of 0.08 mol for applications such as diluted magnetic semiconductor (DMS). The combustion reaction is quite simple and promising in obtaining single-phase materials at the nanoscale. The obtained powder was subjected to the characterizations of X-ray diffraction (XRD), X-ray fluorescence, vibrating sample magnetometry (VSM), and UV-vis spectroscopy. The crystalline material exhibits ZnO crystalline structure and coercive field of 161,36 Oe, showing that the material exhibits the properties of an SMD. (author)

  2. Physical and spectroscopic studies of Cr{sup 3+} doped mixed alkaline earth oxide borate glasses

    Energy Technology Data Exchange (ETDEWEB)

    Samdani, E-mail: samdanimohd82@gmail.com [Department of Engineering, Salalah College of Technology, Salalah (Oman); Ramadevudu, G. [Department of Physics, Vasavi College of Engineering, Ibrahimbagh, Hyderabad 500031, Telangana (India); Chary, M. Narasimha; Shareefuddin, Md. [Department of Physics, Osmania University, Hyderabad 500007, Telangana (India)

    2017-01-15

    A series of mixed alkaline earth oxide glasses xMgO-(30-x)BaO-69.8B{sub 2}O{sub 3}-0.2Cr{sub 2}O{sub 3} were prepared and studied using electron paramagnetic resonance (EPR), optical absorption, Raman spectroscopy and photoluminescence experimental techniques. The optical absorption spectra revealed the characteristic octahedral symmetry of Cr{sup 3+}ions through three broad band transitions {sup 4}A{sub 2g}(F)→ {sup 4}T{sub 2g}(F), {sup 4}A{sub 2g}(F)→ {sup 4}T{sub 1g}(F), and {sup 4}A{sub 2g}(F)→ {sup 2}T{sub 1g}(P). The crystal field (Dq) and Racah parameters (B and C), the optical band gap and Urbach energies of the glass samples were also reported along with the physical properties like density and molar volume. In the EPR spectra three resonance signals corresponding to Cr3+ ions were observed. A broad signal with g = 5.110 was observed which belongs to the isolated Cr3+ centers localized in the strongly distorted octahedral (rhombic) sites of the glass network, a narrow signal (g = 1.960) corresponding to the Cr{sup 3+} centers in the weekly distorted (cubic) sites of the glass network, and a third very broad signal (g = 2.210) was also observed corresponding to Cr{sup 3+}- Cr{sup 3+} paired centers coupled by magnetic dipolar interaction. Another resonance signal with effective value g ≈ 4.220 was attributed to Fe{sup 3+} ions impurity. The number of spins (N) participating in the resonance and susceptibility (χ) values at room temperature were reported and their values varied in a non-linear manner with the composition exhibiting mixed oxide effect. The estimated molecular bonding coefficients (α) values indicated stronger ionic contribution. The Raman spectral investigations were carried out. The Photoluminescence spectra bands near 690 and 750 nm correspond to the Cr{sup 3+} centers in high and low field sites respectively. - Highlights: • Spectroscopic studies were made on alkaline earth borate glasses. • Three resonance signals

  3. Semiconductor plasmonic crystals : active control of THz extinction

    NARCIS (Netherlands)

    Schaafsma, M.C.; Gomez Rivas, J.

    2013-01-01

    We investigate theoretically the enhanced THz extinction by periodic arrays of semiconductor particles. Scattering particles of doped semiconductors can sustain localized surface plasmon polaritons, which can be diffractively coupled giving rise to surface lattice resonances. These resonances are

  4. High-resolution laser spectroscopy of rare-earth doped insulators: a personal perspective

    International Nuclear Information System (INIS)

    Macfarlane, Roger M.

    2002-01-01

    I offer some reflections on the past three decades of high-resolution spectroscopy of rare-earth ions in solids which was ushered in by the development of tunable lasers in the mid 1970s. A brief review is given of some of the accomplishments in the area of spectral hole-burning and coherent transient spectroscopy, emphasizing work with which the author has been associated. Spectral hole-burning has been characterized by a richness of mechanisms. These include population storage in nuclear-spin and electron-spin Zeeman sub-levels, hyperfine and superhyperfine levels and metastable optical levels with corresponding hole lifetimes from many hours to microseconds. In addition, persistent hole-burning has been seen in disordered materials and in those showing photo-ionization or photo-chemistry following excitation into zero-phonon lines. This has made hole-burning a generally useful technique for the measurement of magnetic and electric dipole moments, hyperfine interactions, spin relaxation and thermally induced line-broadening. Photon-echoes have proven to be the prime source of coherence-time information and coherence times as long as several milliseconds corresponding to optical resonance widths of less than 100 Hz have been reported. Tables summarizing these results and providing references to original work are included

  5. Quantum efficiency of silica-coated rare-earth doped yttrium silicate

    International Nuclear Information System (INIS)

    Cervantes-Vásquez, D.; Contreras, O.E.; Hirata, G.A.

    2013-01-01

    The photoluminescent properties of rare earth-activated white-emitting Y 2 SiO 5 :Ce,Tb nanocrystalline phosphor prepared by two different methods, pressure-assisted combustion synthesis and sol–gel, were studied. The synthesized phosphor samples were post-annealed at 1373 K and 1623 K in order to obtain the X1-Y 2 SiO 5 and X2-Y 2 SiO 5 phases, respectively, which were confirmed by X-ray diffraction measurements. Photoluminescence analysis showed the contribution of two blue-emission bands within the 380–450 nm region originating from 5d–4f transitions in Ce 3+ ions and a well-defined green emission of Tb 3+ ions located at 545 nm corresponding to 5 D 4 → 7 F 5 electronic transitions. Thereafter, Y 2 SiO 5 :Ce,Tb powders were coated with colloidal silica in order to investigate the effect of silica coatings on their luminescent properties. Absolute fluorescence quantum efficiency measurements were carefully performed, which revealed an increase of 12% of efficiency in coated compared with bare-Y 2 SiO 5 :Ce,Tb phosphor. -- Highlights: • Y 2 SiO 5 :Ce,Tb phosphor powders were successfully coated with colloidal silica. • Post-annealing treatments improved the quantum efficiency of silica-coated Y 2 SiO 5 :Ce,Tb phosphors. • Absolute fluorescence quantum efficiency measurements showed an increase of 12%

  6. Quantum efficiency of silica-coated rare-earth doped yttrium silicate

    Energy Technology Data Exchange (ETDEWEB)

    Cervantes-Vásquez, D., E-mail: dcervant@cnyn.unam.mx [Centro de Investigación Científica y de Educación Superior de Ensenada, Carretera Ensenada-Tijuana No. 3918, Zona Playitas, C.P. 22860 Ensenada, B.C., México (Mexico); Contreras, O.E.; Hirata, G.A. [Centro de Nanociencias y Nanotecnología, Universidad Nacional Autónoma de México, Km. 107 Carretera Tijuana-Ensenada, C.P. 22800 Ensenada, B.C., México (Mexico)

    2013-11-15

    The photoluminescent properties of rare earth-activated white-emitting Y{sub 2}SiO{sub 5}:Ce,Tb nanocrystalline phosphor prepared by two different methods, pressure-assisted combustion synthesis and sol–gel, were studied. The synthesized phosphor samples were post-annealed at 1373 K and 1623 K in order to obtain the X1-Y{sub 2}SiO{sub 5} and X2-Y{sub 2}SiO{sub 5} phases, respectively, which were confirmed by X-ray diffraction measurements. Photoluminescence analysis showed the contribution of two blue-emission bands within the 380–450 nm region originating from 5d–4f transitions in Ce{sup 3+} ions and a well-defined green emission of Tb{sup 3+} ions located at 545 nm corresponding to {sup 5}D{sub 4}→{sup 7}F{sub 5} electronic transitions. Thereafter, Y{sub 2}SiO{sub 5}:Ce,Tb powders were coated with colloidal silica in order to investigate the effect of silica coatings on their luminescent properties. Absolute fluorescence quantum efficiency measurements were carefully performed, which revealed an increase of 12% of efficiency in coated compared with bare-Y{sub 2}SiO{sub 5}:Ce,Tb phosphor. -- Highlights: • Y{sub 2}SiO{sub 5}:Ce,Tb phosphor powders were successfully coated with colloidal silica. • Post-annealing treatments improved the quantum efficiency of silica-coated Y{sub 2}SiO{sub 5}:Ce,Tb phosphors. • Absolute fluorescence quantum efficiency measurements showed an increase of 12%.

  7. Doping of alkali, alkaline-earth, and transition metals in covalent-organic frameworks for enhancing CO2 capture by first-principles calculations and molecular simulations.

    Science.gov (United States)

    Lan, Jianhui; Cao, Dapeng; Wang, Wenchuan; Smit, Berend

    2010-07-27

    We use the multiscale simulation approach, which combines the first-principles calculations and grand canonical Monte Carlo simulations, to comprehensively study the doping of a series of alkali (Li, Na, and K), alkaline-earth (Be, Mg, and Ca), and transition (Sc and Ti) metals in nanoporous covalent organic frameworks (COFs), and the effects of the doped metals on CO2 capture. The results indicate that, among all the metals studied, Li, Sc, and Ti can bind with COFs stably, while Be, Mg, and Ca cannot, because the binding of Be, Mg, and Ca with COFs is very weak. Furthermore, Li, Sc, and Ti can improve the uptakes of CO2 in COFs significantly. However, the binding energy of a CO2 molecule with Sc and Ti exceeds the lower limit of chemisorptions and, thus, suffers from the difficulty of desorption. By the comparative studies above, it is found that Li is the best surface modifier of COFs for CO2 capture among all the metals studied. Therefore, we further investigate the uptakes of CO2 in the Li-doped COFs. Our simulation results show that at 298 K and 1 bar, the excess CO2 uptakes of the Li-doped COF-102 and COF-105 reach 409 and 344 mg/g, which are about eight and four times those in the nondoped ones, respectively. As the pressure increases to 40 bar, the CO2 uptakes of the Li-doped COF-102 and COF-105 reach 1349 and 2266 mg/g at 298 K, respectively, which are among the reported highest scores to date. In summary, doping of metals in porous COFs provides an efficient approach for enhancing CO2 capture.

  8. Photocatalytic degradation of the Paracetamol drug using Lanthanum doped ZnO nanoparticles and their in-vitro cytotoxicity assay

    International Nuclear Information System (INIS)

    Shakir, Mohammad; Faraz, Mohd; Sherwani, Mohd Asif; Al-Resayes, Saud I.

    2016-01-01

    The doping of semiconductor by rare earth metals nanoparticles is an effective way for increasing photocatalytic activity. Zinc oxide and Lanthanum doped Zinc oxide nanoparticles were synthesized by modifying the gel-combustion method. It was found that La can greatly enhance the cytotoxicity and photocatalytic activity of ZnO nanoparticles towards various cell lines and Paracetamol drug. These nanoparticles were characterized by various spectroscopic and other techniques which clearly revealed the presence of lanthanum ions. The absorption edge shifts towards the visible region after doping with La ions. This shift shows that the doping of La ions is favorable for absorbing the visible light. The comparative photocatalytic and cytotoxicity activity revealed that La doped ZnO nanoparticles remarkably enhanced activities as compared to the ZnO nanoparticles. The outcome of these studies offers valuable for planning La doped ZnO nanoparticles having cytotoxicity and photocatalytic activities helpful for the formulation of anticancer product and waste water remediation.

  9. Photocatalytic degradation of the Paracetamol drug using Lanthanum doped ZnO nanoparticles and their in-vitro cytotoxicity assay

    Energy Technology Data Exchange (ETDEWEB)

    Shakir, Mohammad, E-mail: shakir078@yahoo.com [Department of Chemistry, Aligarh Muslim University, Aligarh 202002 (India); Faraz, Mohd [Department of Chemistry, Aligarh Muslim University, Aligarh 202002 (India); Sherwani, Mohd Asif [Interdisciplinary Biotechnology Unit, Aligarh Muslim University, Aligarh 202002 (India); Al-Resayes, Saud I. [Department of Chemistry, College of Science, King Saud University, Riyadh 11451 (Saudi Arabia)

    2016-08-15

    The doping of semiconductor by rare earth metals nanoparticles is an effective way for increasing photocatalytic activity. Zinc oxide and Lanthanum doped Zinc oxide nanoparticles were synthesized by modifying the gel-combustion method. It was found that La can greatly enhance the cytotoxicity and photocatalytic activity of ZnO nanoparticles towards various cell lines and Paracetamol drug. These nanoparticles were characterized by various spectroscopic and other techniques which clearly revealed the presence of lanthanum ions. The absorption edge shifts towards the visible region after doping with La ions. This shift shows that the doping of La ions is favorable for absorbing the visible light. The comparative photocatalytic and cytotoxicity activity revealed that La doped ZnO nanoparticles remarkably enhanced activities as compared to the ZnO nanoparticles. The outcome of these studies offers valuable for planning La doped ZnO nanoparticles having cytotoxicity and photocatalytic activities helpful for the formulation of anticancer product and waste water remediation.

  10. Processing of insulators and semiconductors

    Science.gov (United States)

    Quick, Nathaniel R.; Joshi, Pooran C.; Duty, Chad Edward; Jellison, Jr., Gerald Earle; Angelini, Joseph Attilio

    2015-06-16

    A method is disclosed for processing an insulator material or a semiconductor material. The method includes pulsing a plasma lamp onto the material to diffuse a doping substance into the material, to activate the doping substance in the material or to metallize a large area region of the material. The method may further include pulsing a laser onto a selected region of the material to diffuse a doping substance into the material, to activate the doping substance in the material or to metallize a selected region of the material.

  11. Characterization of deep level defects and thermally stimulated depolarization phenomena in La-doped TlInS{sub 2} layered semiconductor

    Energy Technology Data Exchange (ETDEWEB)

    Seyidov, MirHasan Yu., E-mail: smirhasan@gyte.edu.tr; Suleymanov, Rauf A.; Mikailzade, Faik A. [Department of Physics, Gebze Technical University, Gebze, Kocaeli 41400 (Turkey); Institute of Physics of NAS of Azerbaijan, H. Javid ave. 33, Baku AZ-1143 (Azerbaijan); Kargın, Elif Orhan [Department of Physics, Gebze Technical University, Gebze, Kocaeli 41400 (Turkey); Odrinsky, Andrei P. [Institute of Technical Acoustics, National Academy of Sciences of Belarus, Lyudnikov ave. 13, Vitebsk 210717 (Belarus)

    2015-06-14

    Lanthanum-doped high quality TlInS{sub 2} (TlInS{sub 2}:La) ferroelectric-semiconductor was characterized by photo-induced current transient spectroscopy (PICTS). Different impurity centers are resolved and identified. Analyses of the experimental data were performed in order to determine the characteristic parameters of the extrinsic and intrinsic defects. The energies and capturing cross section of deep traps were obtained by using the heating rate method. The observed changes in the Thermally Stimulated Depolarization Currents (TSDC) near the phase transition points in TlInS{sub 2}:La ferroelectric-semiconductor are interpreted as a result of self-polarization of the crystal due to the internal electric field caused by charged defects. The TSDC spectra show the depolarization peaks, which are attributed to defects of dipolar origin. These peaks provide important information on the defect structure and localized energy states in TlInS{sub 2}:La. Thermal treatments of TlInS{sub 2}:La under an external electric field, which was applied at different temperatures, allowed us to identify a peak in TSDC which was originated from La-dopant. It was established that deep energy level trap BTE43, which are active at low temperature (T ≤ 156 K) and have activation energy 0.29 eV and the capture cross section 2.2 × 10{sup −14} cm{sup 2}, corresponds to the La dopant. According to the PICTS results, the deep level trap center B5 is activated in the temperature region of incommensurate (IC) phases of TlInS{sub 2}:La, having the giant static dielectric constant due to the structural disorders. From the PICTS simulation results for B5, native deep level trap having an activation energy of 0.3 eV and the capture cross section of 1.8 × 10{sup −16} cm{sup 2} were established. A substantial amount of residual space charges is trapped by the deep level localized energy states of B5 in IC-phase. While the external electric field is applied, permanent dipoles

  12. Characterization of deep level defects and thermally stimulated depolarization phenomena in La-doped TlInS2 layered semiconductor

    International Nuclear Information System (INIS)

    Seyidov, MirHasan Yu.; Suleymanov, Rauf A.; Mikailzade, Faik A.; Kargın, Elif Orhan; Odrinsky, Andrei P.

    2015-01-01

    Lanthanum-doped high quality TlInS 2 (TlInS 2 :La) ferroelectric-semiconductor was characterized by photo-induced current transient spectroscopy (PICTS). Different impurity centers are resolved and identified. Analyses of the experimental data were performed in order to determine the characteristic parameters of the extrinsic and intrinsic defects. The energies and capturing cross section of deep traps were obtained by using the heating rate method. The observed changes in the Thermally Stimulated Depolarization Currents (TSDC) near the phase transition points in TlInS 2 :La ferroelectric-semiconductor are interpreted as a result of self-polarization of the crystal due to the internal electric field caused by charged defects. The TSDC spectra show the depolarization peaks, which are attributed to defects of dipolar origin. These peaks provide important information on the defect structure and localized energy states in TlInS 2 :La. Thermal treatments of TlInS 2 :La under an external electric field, which was applied at different temperatures, allowed us to identify a peak in TSDC which was originated from La-dopant. It was established that deep energy level trap BTE43, which are active at low temperature (T ≤ 156 K) and have activation energy 0.29 eV and the capture cross section 2.2 × 10 −14 cm 2 , corresponds to the La dopant. According to the PICTS results, the deep level trap center B5 is activated in the temperature region of incommensurate (IC) phases of TlInS 2 :La, having the giant static dielectric constant due to the structural disorders. From the PICTS simulation results for B5, native deep level trap having an activation energy of 0.3 eV and the capture cross section of 1.8 × 10 −16 cm 2 were established. A substantial amount of residual space charges is trapped by the deep level localized energy states of B5 in IC-phase. While the external electric field is applied, permanent dipoles, which are originated from the charged B5

  13. Manipulating Conduction in Metal Oxide Semiconductors: Mechanism Investigation and Conductance Tuning in Doped Fe2O3 Hematite and Metal/Ga2O3/Metal Heterostructure

    Science.gov (United States)

    Zhao, Bo

    This study aims at understanding the fundamental mechanisms of conduction in several metal oxide semiconductors, namely alpha-Fe2O 3 and beta-Ga2O3, and how it could be tuned to desired values/states to enable a wide range of application. In the first effort, by adding Ti dopant, we successfully turned Fe2O3 from insulating to conductive by fabricated compositionally and structurally well-defined epitaxial alpha-(TixFe1-x)2 O3(0001) films for x ≤ 0.09. All films were grown by oxygen plasma assisted molecular beam epitaxy on Al2O3(0001) sapphire substrate with a buffer layer of Cr2O3 to relax the strain from lattice mismatch. Van der Pauw resistivity and Hall effect measurements reveal carrier concentrations between 1019 and 1020 cm-3 at room temperature and mobilities in the range of 0.1 to 0.6 cm2/V˙s. Such low mobility, unlike conventional band-conduction semiconductor, was attributed to hopping mechanism due to strong electron-phonon interaction in the lattice. More interestingly, conduction mechanism transitions from small-polaron hopping at higher temperatures to variable range hopping at lower temperatures with a transition temperature between 180 to 140 K. Consequently, by adding Ti dopant, conductive Fe 2O3 hematite thin films were achieved with a well-understood conducting mechanism that could guide further device application such as spin transistor and water splitting. In the case of Ga2O3, while having a band gap as high as 5 eV, they are usually conductive for commercially available samples due to unintentional Si doping. However, we discovered the conductance could be repeatedly switched between high resistance state and low resistance state when made into metal/Ga2O3 /metal heterostructure. However, to obtain well controlled switching process with consistent switching voltages and resistances, understanding switching mechanism is the key. In this study, we fabricated resistive switching devices utilizing a Ni/Ga2O3/Ir heterostructure. Bipolar

  14. Role of electrostatic fluctuations in doped semiconductors upon the transition from band to hopping conduction (by the example of p-Ge:Ga)

    Energy Technology Data Exchange (ETDEWEB)

    Poklonski, N. A., E-mail: poklonski@bsu.by; Vyrko, S. A.; Poklonskaya, O. N. [Belarusian State University (Belarus); Zabrodskii, A. G. [Russian Academy of Sciences, Ioffe Physical–Technical Institute (Russian Federation)

    2016-06-15

    The electrostatic model of ionization equilibrium between hydrogen-like acceptors and v-band holes in crystalline covalent p-type semiconductors is developed. The range of applicability of the model is the entire insulator side of the insulator–metal (Mott) phase transition. The density of the spatial distribution of acceptor- and donor-impurity atoms and holes over a crystal was assumed to be Poissonian and the fluctuations of their electrostatic potential energy, to be Gaussian. The model takes into account the effect of a decrease in the energy of affinity of an ionized acceptor to a v-band hole due to Debye–Hückel ion screening by both free v-band holes and localized holes hopping over charge states (0) and (–1) of acceptors in the acceptor band. All donors are in charge state (+1) and are not directly involved in the screening, but ensure the total electroneutrality of a sample. In the quasiclassical approximation, analytical expressions for the root-mean-square fluctuation of the v-band hole energy W{sub p} and effective acceptor bandwidth W{sub a} are obtained. In calculating W{sub a}, only fluctuations caused by the Coulomb interaction between two nearest point charges (impurity ions and holes) are taken into account. It is shown that W{sub p} is lower than W{sub a}, since electrostatic fluctuations do not manifest themselves on scales smaller than the average de Broglie wavelength of a free hole. The delocalization threshold for v-band holes is determined as the sum of the diffusive-percolation threshold and exchange energy of holes. The concentration of free v-band holes is calculated at the temperature T{sub j} of the transition from dc band conductivity to conductivity implemented via hopping over acceptor states, which is determined from the virial theorem. The dependence of the differential energy of the thermal ionization of acceptors at the temperature 3T{sub j}/2 on their concentration N and degree of compensation K (the ratio between the

  15. In Situ Neutron Diffraction of Rare-Earth Phosphate Proton Conductors Sr/Ca-doped LaPO4 at Elevated Temperatures

    Science.gov (United States)

    Al-Wahish, Amal; Al-Binni, Usama; Bridges, C. A.; Huq, A.; Bi, Z.; Paranthaman, M. P.; Tang, S.; Kaiser, H.; Mandrus, D.

    Acceptor-doped lanthanum orthophosphates are potential candidate electrolytes for proton ceramic fuel cells. We combined neutron powder diffraction (NPD) at elevated temperatures up to 800° C , X-ray powder diffraction (XRD) and scanning electron microscopy (SEM) to investigate the crystal structure, defect structure, thermal stability and surface topography. NPD shows an average bond length distortion in the hydrated samples. We employed Quasi-Elastic Neutron Scattering (QENS) and electrochemical impedance spectroscopy (EIS) to study the proton dynamics of the rare-earth phosphate proton conductors 4.2% Sr/Ca-doped LaPO4. We determined the bulk diffusion and the self-diffusion coefficients. Our results show that QENS and EIS are probing fundamentally different proton diffusion processes. Supported by the U.S. Department of Energy.

  16. PdO Doping Tunes Band-Gap Energy Levels as Well as Oxidative Stress Responses to a Co3O4p-Type Semiconductor in Cells and the Lung

    Science.gov (United States)

    2014-01-01

    We demonstrate through PdO doping that creation of heterojunctions on Co3O4 nanoparticles can quantitatively adjust band-gap and Fermi energy levels to study the impact of metal oxide nanoparticle semiconductor properties on cellular redox homeostasis and hazard potential. Flame spray pyrolysis (FSP) was used to synthesize a nanoparticle library in which the gradual increase in the PdO content (0–8.9%) allowed electron transfer from Co3O4 to PdO to align Fermi energy levels across the heterojunctions. This alignment was accompanied by free hole accumulation at the Co3O4 interface and production of hydroxyl radicals. Interestingly, there was no concomitant superoxide generation, which could reflect the hole dominance of a p-type semiconductor. Although the electron flux across the heterojunctions induced upward band bending, the Ec levels of the doped particles showed energy overlap with the biological redox potential (BRP). This allows electron capture from the redox couples that maintain the BRP from −4.12 to −4.84 eV, causing disruption of cellular redox homeostasis and induction of oxidative stress. PdO/Co3O4 nanoparticles showed significant increases in cytotoxicity at 25, 50, 100, and 200 μg/mL, which was enhanced incrementally by PdO doping in BEAS-2B and RAW 264.7 cells. Oxidative stress presented as a tiered cellular response involving superoxide generation, glutathione depletion, cytokine production, and cytotoxicity in epithelial and macrophage cell lines. A progressive series of acute pro-inflammatory effects could also be seen in the lungs of animals exposed to incremental PdO-doped particles. All considered, generation of a combinatorial PdO/Co3O4 nanoparticle library with incremental heterojunction density allowed us to demonstrate the integrated role of Ev, Ec, and Ef levels in the generation of oxidant injury and inflammation by the p-type semiconductor, Co3O4. PMID:24673286

  17. PdO doping tunes band-gap energy levels as well as oxidative stress responses to a Co₃O₄ p-type semiconductor in cells and the lung.

    Science.gov (United States)

    Zhang, Haiyuan; Pokhrel, Suman; Ji, Zhaoxia; Meng, Huan; Wang, Xiang; Lin, Sijie; Chang, Chong Hyun; Li, Linjiang; Li, Ruibin; Sun, Bingbing; Wang, Meiying; Liao, Yu-Pei; Liu, Rong; Xia, Tian; Mädler, Lutz; Nel, André E

    2014-04-30

    We demonstrate through PdO doping that creation of heterojunctions on Co3O4 nanoparticles can quantitatively adjust band-gap and Fermi energy levels to study the impact of metal oxide nanoparticle semiconductor properties on cellular redox homeostasis and hazard potential. Flame spray pyrolysis (FSP) was used to synthesize a nanoparticle library in which the gradual increase in the PdO content (0-8.9%) allowed electron transfer from Co3O4 to PdO to align Fermi energy levels across the heterojunctions. This alignment was accompanied by free hole accumulation at the Co3O4 interface and production of hydroxyl radicals. Interestingly, there was no concomitant superoxide generation, which could reflect the hole dominance of a p-type semiconductor. Although the electron flux across the heterojunctions induced upward band bending, the E(c) levels of the doped particles showed energy overlap with the biological redox potential (BRP). This allows electron capture from the redox couples that maintain the BRP from -4.12 to -4.84 eV, causing disruption of cellular redox homeostasis and induction of oxidative stress. PdO/Co3O4 nanoparticles showed significant increases in cytotoxicity at 25, 50, 100, and 200 μg/mL, which was enhanced incrementally by PdO doping in BEAS-2B and RAW 264.7 cells. Oxidative stress presented as a tiered cellular response involving superoxide generation, glutathione depletion, cytokine production, and cytotoxicity in epithelial and macrophage cell lines. A progressive series of acute pro-inflammatory effects could also be seen in the lungs of animals exposed to incremental PdO-doped particles. All considered, generation of a combinatorial PdO/Co3O4 nanoparticle library with incremental heterojunction density allowed us to demonstrate the integrated role of E(v), E(c), and E(f) levels in the generation of oxidant injury and inflammation by the p-type semiconductor, Co3O4.

  18. Doped Organic Transistors.

    Science.gov (United States)

    Lüssem, Björn; Keum, Chang-Min; Kasemann, Daniel; Naab, Ben; Bao, Zhenan; Leo, Karl

    2016-11-23

    Organic field-effect transistors hold the promise of enabling low-cost and flexible electronics. Following its success in organic optoelectronics, the organic doping technology is also used increasingly in organic field-effect transistors. Doping not only increases device performance, but it also provides a way to fine-control the transistor behavior, to develop new transistor concepts, and even improve the stability of organic transistors. This Review summarizes the latest progress made in the understanding of the doping technology and its application to organic transistors. It presents the most successful doping models and an overview of the wide variety of materials used as dopants. Further, the influence of doping on charge transport in the most relevant polycrystalline organic semiconductors is reviewed, and a concise overview on the influence of doping on transistor behavior and performance is given. In particular, recent progress in the understanding of contact doping and channel doping is summarized.

  19. Enhancement of pump absorption efficiency by bending and twisting of double clad rare earth doped fibers (Conference Presentation)

    Science.gov (United States)

    Koška, Pavel; Peterka, Pavel; Doya, Valérie; Aubrecht, Jan; Kasik, Ivan; Podrazký, Ondřej

    2017-05-01

    chaotic double-clad fiber amplifier," Opt. Lett., vol. 26, no. 12, pp. 872-874, (2001). [2] Kouznetsov, D., Moloney, J. V., "Efficiency of pump absorption in double-clad fiber amplifiers. II. Broken circular symmetry," J. Opt. Soc. Am. B, vol. 19, no. 6, pp. 1259-1263, June 2002. [3] Li, Y., Jackson, S. D., Fleming, S., "High absorption and low splice loss properties of hexagonal double-clad fiber," IEEE Photonics Technol. Lett., vol 16, no. 11, pp. 2502-2504, Nov. 2004. [4] Ko\\vska, P. and Peterka, P., "Numerical analysis of pump propagation and absorption in specially tailored double-clad rare-earth doped fiber," Optical and Quantum Electronics, vol. 47, no. 9, pp. 3181-3191 (2015). [5] Ko\\vska, P., Peterka, P., and Doya, V., "Numerical modeling of pump absorption in coiled and twisted double-clad fibers," IEEE J. Sel. Top. Quantum Electron., vol. 22, no. 2 (2016). [6] Ko\\vska, P., Peterka, P., Aubrecht, J., Podrazký, O., Todorov, F., Becker, M., Baravets, Y., Honzátko, P., and Kašík, I., "Enhanced pump absorption efficiency in coiled and twisted double-clad thulium-doped fibers," Opt. Express, vol. 24, no. 1, pp. 102-107 (2016).

  20. Observation of coherent population transfer in a four-level tripod system with a rare-earth-metal-ion-doped crystal

    International Nuclear Information System (INIS)

    Goto, Hayato; Ichimura, Kouichi

    2007-01-01

    Coherent population transfer in a laser-driven four-level system in a tripod configuration is experimentally investigated with a rare-earth-metal-ion-doped crystal (Pr 3+ :Y 2 SiO 5 ). The population transfers observed here indicate that a main process inducing them is not optical pumping, which is an incoherent process inducing population transfer. Moreover, numerical simulation, which well reproduces the experimental results, also shows that the process inducing the observed population transfers is similar to stimulated Raman adiabatic passage (STIRAP) in the sense that this process possesses characteristic features of STIRAP

  1. Optical and structural characterization of the pure and doped BaY2F8 with rare earths for application in radiation detectors and scintillators

    International Nuclear Information System (INIS)

    Mello, Ana Carolina Santana de

    2008-01-01

    In this work Barium Yttrium Fluoride (BaY 2 F 8 -BaYF) doped with different concentrations of ions Tb 3+ , Er 3+ , Tm 3+ e Nd 3+ were characterized, aiming the application in radiation detection devices that use the scintillating properties. Two types of samples were produced in the CLA-IPEN-SP, polycrystalline samples, obtained via solid state reaction of BaF 2 and YF 3 under HF atmosphere, and single crystals, obtained via the zone melting method also in a HF atmosphere. The samples were characterized using the following experimental techniques: X-ray powder diffraction, Radioluminescence (RL), Optical Absorption and Dispersive X-ray Absorption Spectroscopy (DXAS). The X-ray diffraction pattern showed the presence of the phase BaY 2 F 8 and a small amount of the phase Ba 4 Y 3 F 17 in the polycrystalline pure and Tb 3+ doped samples. The other samples showed only the desired BaY 2 F 8 phase. The radioluminescence measurements of the doped BaYF, when irradiated with X-rays, showed emission peaks in energies that are characteristics of the 4f-4f transitions of rare earths. The RL of the samples with 2 mol por cent and 3 mold of Tb 3+ showed quite intense peaks with a maximum emission peak at 545 nm. The Tm 3+ doped BYF showed that the scintillation efficiency is not directly proportional to the doping level, and the highest RL emission were obtained for the polycrystalline samples doped with 1 mol por cent, showing a maximum peak intensity at 456 nm (the blue region of the visible spectrum). All samples showed a phosphorescent decay time of the order of seconds. Single crystals of BaYF doped with 2 mol por cent of Er 3+ , in addition to one of the highest phosphorescence time, presents a quite strong Rl in the green region of the spectra. The radiation damage was evaluated by the optical absorption techniques and the results showed that the formation of the absorption bands can be connected to colors centers generated by radiation in the matrix. Measurements of

  2. Semiconductor research with reactor neutrons

    International Nuclear Information System (INIS)

    Kimura, Itsuro

    1992-01-01

    Reactor neutrons play an important role for characterization of semiconductor materials as same as other advanced materials. On the other hand reactor neutrons bring about not only malignant irradiation effects called radiation damage, but also useful effects such as neutron transmutation doping and defect formation for opto-electronics. Research works on semiconductor materials with the reactor neutrons of the Kyoto University Reactor (KUR) are briefly reviewed. In this review, a stress is laid on the present author's works. (author)

  3. Crystal growth, characterization and theoretical studies of alkaline earth metal-doped tetrakis(thiourea)nickel(II) chloride.

    Science.gov (United States)

    Agilandeshwari, R; Muthu, K; Meenatchi, V; Meena, K; Rajasekar, M; Aditya Prasad, A; Meenakshisundaram, S P

    2015-02-25

    The influence of Sr(II)-doping on the properties of tetrakis(thiourea)nickel(II) chloride (TTNC) has been described. The reduction in the intensity observed in powder X-ray diffraction of doped specimen and slight shifts in vibrational frequencies of doped specimens confirm the lattice stress as a result of doping. Surface morphological changes due to doping of the Sr(II) are observed by scanning electron microscopy. The incorporation of metal into the host crystal lattice was confirmed by energy dispersive X-ray spectroscopy. Lattice parameters are determined by single crystal XRD analysis. The thermogravimetric and differential thermal analysis studies reveal the purity of the materials and no decomposition is observed up to the melting point. The nonlinear optical properties of the doped and undoped specimens were studied. Theoretical calculations were performed using the Density functional theory (DFT) method with B3LYP/LANL2DZ as the basis set. The molecular geometry and vibrational frequencies of TTNC in the ground state were calculated and the observed structural parameters of TTNC are compared with parameters obtained from single crystal X-ray studies. The atomic charge distributions are obtained by Mulliken charge population analysis. The first-order molecular hyperpolarizability, polarizability and dipole moment were derived. Copyright © 2014 Elsevier B.V. All rights reserved.

  4. Nanostructured rare earth doped Nb2O5: Structural, optical properties and their correlation with photonic applications

    International Nuclear Information System (INIS)

    Pereira, Rafael Ramiro; Aquino, Felipe Thomaz; Ferrier, Alban; Goldner, Philippe; Gonçalves, Rogéria R.

    2016-01-01

    In the present work, we report on a systematic study on structural and spectroscopic properties Eu 3+ and Er 3+ -doped Nb 2 O 5 prepared by sol–gel method. The Eu 3+ ions were used as structural probe to determine the symmetry sites occupied by lanthanide ions. The Eu 3+ -doped Nb 2 O 5 nanocrystalline powders were annealed at different temperatures to verify how the different Nb 2 O 5 crystalline phases affect the structure and the luminescence properties. Er 3+ -doped Nb 2 O 5 was prepared showing an intense NIR luminescence, and, visible luminescence on the green and red, deriving from upconversion process. The synthetized materials can find widespread applicability in photonics as red luminophor for white LED (with tricolor), optical amplifiers and upconverter materials. - Highlights: • Vis and NIR emission from nanostructured lanthanide doped Nb 2 O 5 . • Eu 3+ -doped Nb 2 O 5 as Red luminophor. • Multicolor tunability of intense upconversion emission from lanthanide doped Nb 2 O 5 . • Potential application as biological markers. • Broad band NIR emission.

  5. Synthesis and characterization of BaAl{sub 2}O{sub 4}:Eu{sup 2+} co-doped with different rare earth ions

    Energy Technology Data Exchange (ETDEWEB)

    Lephoto, M.A. [Department of Physics, University of the Free State, Private bag X 13, Phuthaditjaba 9866, P.O. Box 339, Bloemfontein, ZA 9300 (South Africa); Ntwaeaborwa, O.M., E-mail: ntwaeab@ufs.ac.za [Department of Physics, University of the Free State, Private bag X 13, Phuthaditjaba 9866, P.O. Box 339, Bloemfontein, ZA 9300 (South Africa); Pitale, Shreyas S.; Swart, H.C. [Department of Physics, University of the Free State, Private bag X 13, Phuthaditjaba 9866, P.O. Box 339, Bloemfontein, ZA 9300 (South Africa); Botha, J.R. [Department of Physics, Nelson Mandela Metropolitan University, Port Elizabeth, ZA 6031 (South Africa); Mothudi, B.M. [Department of Physics, University of South Africa, P.O Box 392, Pretoria, ZA 6031 (South Africa)

    2012-05-15

    Combustion method was used in this study to prepare BaAl{sub 2}O{sub 4}:Eu{sup 2+} phosphors co-doped with different trivalent rare-earths (Re{sup 3+}=Dy{sup 3+}, Nd{sup 3+}, Gd{sup 3+}, Sm{sup 3+}, Ce{sup 3+}, Er{sup 3+}, Pr{sup 3+} and Tb{sup 3+}) ions at an initiating temperature of 600 Degree-Sign C. The phosphors were annealed at 1000 Degree-Sign C for 3 h. As confirmed from the X-ray diffraction (XRD) data, both as prepared and post annealed samples crystallized in the well known hexagonal structure of BaAl{sub 2}O{sub 4}. All samples exhibited bluish-green emission associated with the 4f{sup 6}5d{sup 1}{yields}4f{sup 7} transitions of Eu{sup 2+} at {approx}500 nm. Although the highest intensity was observed from Er{sup 3+} co-doping, the longest afterglow (due to trapping and detrapping of charge carriers) was observed from Nd{sup 3+} followed by Dy{sup 3+} co-doping. The traps responsible for the long afterglow were studied using thermoluminescence (TL) spectroscopy.

  6. Electroluminescence color tuning between green and red from metal-oxide-semiconductor devices fabricated by spin-coating of rare-earth (terbium + europium) organic compounds on silicon

    Science.gov (United States)

    Matsuda, Toshihiro; Hattori, Fumihiro; Iwata, Hideyuki; Ohzone, Takashi

    2018-04-01

    Color tunable electroluminescence (EL) from metal-oxide-semiconductor devices with the rare-earth elements Tb and Eu is reported. Organic compound liquid sources of (Tb + Ba) and Eu with various Eu/Tb ratios from 0.001 to 0.4 were spin-coated on an n+-Si substrate and annealed to form an oxide insulator layer. The EL spectra had only peaks corresponding to the intrashell Tb3+/Eu3+ transitions in the spectral range from green to red, and the intensity ratio of the peaks was appropriately tuned using the appropriate Eu/Tb ratios in liquid sources. Consequently, the EL emission colors linearly changed from yellowish green to yellowish orange and eventually to reddish orange on the CIE chromaticity diagram. The gate current +I G current also affected the EL colors for the medium-Eu/Tb-ratio device. The structure of the surface insulator films analyzed by cross-sectional transmission electron microscopy (TEM), X-ray diffraction (XRD) analysis, and X-ray photoelectron spectroscopy (XPS) has four layers, namely, (Tb4O7 + Eu2O3), [Tb4O7 + Eu2O3 + (Tb/Eu/Ba)SiO x ], (Tb/Eu/Ba)SiO x , and SiO x -rich oxide. The EL mechanism proposed is that electrons injected from the Si substrate into the SiO x -rich oxide and Tb/Eu/Ba-silicate layers become hot electrons accelerated in a high electric field, and then these hot electrons excite Tb3+ and Eu3+ ions in the Tb4O7/Eu2O3 layers resulting in EL emission from Tb3+ and Eu3+ intrashell transitions.

  7. Luminescent features of sol–gel derived rare-earth multi-doped oxyfluoride nano-structured phosphors for white LED application

    International Nuclear Information System (INIS)

    Gouveia-Neto, A.S.; Silva, A.F. da; Bueno, L.A.; Costa, E.B. da

    2012-01-01

    Rare-earth doped oxyfluoride 75SiO 2 :25PbF 2 nano-structured phosphors for white-light-emitting diodes were synthesized by thermal treatment of precursor sol–gel derived glasses. Room temperature luminescence features of Eu 3+ , Sm 3+ , Tb 3+ , Eu 3+ /Tb 3+ , and Sm 3+ /Tb 3+ ions incorporated into low-phonon-energy PbF 2 nanocrystals dispersed in the aluminosilicate glass matrix and excited with UV light emitting diode were investigated. The luminescence spectra exhibited strong emission signals in the red (600, 610, 625, and 646 nm), green (548 and 560 nm), and blue (485 nm) wavelength regions. White-light emission was observed in Sm/Tb and Eu/Tb double-doped activated phosphors employing UV-LED excitation at 395 nm. The dependence of the luminescence emission intensities upon annealing temperature and rare-earth concentration was also examined. The results indicated that there exist optimum annealing temperature and activator ion concentration in order to obtain intense visible emission light with high color rendering index. The study suggests that the nanocomposite phosphor based upon 75SiO 2 :25PbF 2 host herein reported is a promising contender for white-light LED applications. - Highlights: ► White-light emission in double-doped activated phosphors employing UV-LED excitation. ► Luminescent features of europium, samarium, and terbium in nanocrystals dispersed in aluminosilicate glass. ► New nanocomposite phosphor host for white-light LED applications.

  8. Synthesis and thermoelectric properties of rare earth Yb-doped Ba8−xYbxSi30Ga16 clathrates

    International Nuclear Information System (INIS)

    Liu, Lihua; Li, Feng; Wei, Yuping; Chen, Ning; Bi, Shanli; Qiu, Hongmei; Cao, Guohui; Li, Yang

    2014-01-01

    Highlights: • Samples with the chemical formula Ba8− x Yb x Si 30 Ga 16 (x = 0, 0.5, 0.7, 1 and 1.5) were prepared. • Some Yb atoms enter the clathrate lattice to replace Ba, while other Yb atoms are oxidized as Yb 2 O 3 . • The thermal conductivity decreases with Yb-doping. • Thermoelectric figure of merit ZT significantly increased. -- Abstract: The potential thermoelectric and magnetic application of clathrate materials with rare-earth doping is the focus of much of the recent research activity in the synthetic material physics and chemistry. A series of clathrate samples with the chemical formula Ba 8−x Yb x Si 30 Ga 16 (x = 0, 0.5, 0.7, 1 and 1.5) were prepared by combining arc melting, ball milling and spark plasma sintering (SPS) techniques. X-ray diffraction and scanning electronic microscopy combined with energy-dispersive X-ray spectroscopy (EDS) analysis showed the dominant phase to be the type-I clathrate. Whereas, X-ray structural refinement and EDS analysis indicated that some Yb atoms enter the clathrate lattice to replace Ba at 2a sites, while other Yb atoms are oxidized as Yb 2 O 3 precipitated around grain boundaries. The solid solubility of Yb into clathrate lattice yielded x ∼ 0.3. Comparative analysis between Yb-doped and Yb-free clathrates showed that the thermal conductivity decreases with Yb-doping. Consequently, thermoelectric figure of merit ZT significantly increased

  9. Luminescence quenching versus enhancement in WO3-NaPO3 glasses doped with trivalent rare earth ions and containing silver nanoparticles

    Science.gov (United States)

    Dousti, M. Reza; Poirier, Gael Y.; Amjad, Raja J.; de Camargo, Andrea S. S.

    2016-10-01

    We report on the influence of silver nanoparticles (NPs) on the luminescence behavior of trivalent rare earth (RE) ion doped tungsten-phosphate glasses. In order to induce the growth of NPs, the as-prepared glass samples containing silver atoms, are exposed to heat-treatment above the glass transition temperature. The surface plasmon resonance band of the Ag NPs is observed in the visible range around 420 and 537 nm in the glasses with low and high tungsten content, respectively. Such difference in spectral shift of the plasmon band is attributed to the difference in the refractive index of the two studied glass compositions. Heat-treatment results in the general increase in number of NPs, while in the case of glasses with low tungsten content, it also imposes a shift to the Ag plasmon band. The NPs size distribution (4-10 nm) was determined in good agreement with the values obtained by using Mie theory and by transmission electron microscopy. The observed quenching in the visible luminescence of glasses doped with Eu3+, Tb3+ or Er3+is attributed to energy transfer from the RE ions to Ag species, while an enhanced near-infrared emission in Er3+ doped glasses is discussed in terms of the chemical contribution of silver, rather than the most commonly claimed enhancement of localized field or energy transfer from silver species to Er3+. The results are supported by the lifetime measurements. We believe that this study gives further insight and in-depth exploration of the somewhat controversial discussions on the influence of metallic NPs plasmonic effects in RE-doped glasses.

  10. Semiconductor statistics

    CERN Document Server

    Blakemore, J S

    1987-01-01

    In-depth exploration of the implications of carrier populations and Fermi energies examines distribution of electrons in energy bands and impurity levels of semiconductors. Also: kinetics of semiconductors containing excess carriers, particularly in terms of trapping, excitation, and recombination.

  11. Semiconductor physics

    CERN Document Server

    Böer, Karl W

    2018-01-01

    This handbook gives a complete survey of the important topics and results in semiconductor physics. It addresses every fundamental principle and most research topics and areas of application in the field of semiconductor physics. Comprehensive information is provided on crystalline bulk and low-dimensional as well as amporphous semiconductors, including optical, transport, and dynamic properties.

  12. Effects of the inversion layer thickness and 10B distribution in it on the characteristics of ion-doped semiconductor neutron counters

    International Nuclear Information System (INIS)

    Diasamidze, Eh.M.; Solov'ev, Yu.A.; Shmakov, A.N.

    1984-01-01

    The technique for calculating the dependence of energy spectrum of the 10 B(n, α) 7 Li reaction products in the thickness of the inversion layer in a semiconductor counter fabricated using the diffusion method is proposed. The inversion layer is formed as a result of the 10 B ion implantation into n-type silicon. The cases of uniform and Gaussian distributions of 10 B impurity are considered. Corrections for neutron fluence calculation by α-peak, taking into account α-particle absorption in the inversion layer are obtained. It is concluded that the suggested calculational technique can be used for semiconductor counters fabricated by the diffusion method

  13. Fabrication of highly nonlinear germano-silicate glass optical fiber incorporated with PbTe semiconductor quantum dots using atomization doping process and its optical nonlinearity.

    Science.gov (United States)

    Ju, Seongmin; Watekar, Pramod R; Han, Won-Taek

    2011-01-31

    Germano-silicate glass optical fiber incorporated with PbTe semiconductor quantum dots (SQDs) in the core was fabricated by using the atomization process in modified chemical vapor deposition (MCVD) process. The absorption bands attributed to PbTe semiconductor quantum dots in the fiber core were found to appear at around 687 nm and 1055 nm. The nonlinear refractive index measured by the long-period fiber grating (LPG) pair method upon pumping with laser diode at 976.4 nm was estimated to be ~1.5 × 10(-16) m2/W.

  14. Structural/surface characterization and catalytic evaluation of rare-earth (Y, Sm and La) doped ceria composite oxides for CH{sub 3}SH catalytic decomposition

    Energy Technology Data Exchange (ETDEWEB)

    He, Dedong; Chen, Dingkai; Hao, Husheng; Yu, Jie; Liu, Jiangping; Lu, Jichang; Liu, Feng [Faculty of Environmental Science and Engineering, Kunming University of Science and Technology, Kunming, 650500 (China); Wan, Gengping [Faculty of Environmental Science and Engineering, Kunming University of Science and Technology, Kunming, 650500 (China); Research Center for Analysis and Measurement, Hainan University, Haikou, 570228 (China); He, Sufang [Research Center for Analysis and Measurement, Kunming University of Science and Technology, Kunming, 650093 (China); Luo, Yongming, E-mail: environcatalysis222@yahoo.com [Faculty of Environmental Science and Engineering, Kunming University of Science and Technology, Kunming, 650500 (China)

    2016-12-30

    Highlights: • Ce{sub 0.75}RE{sub 0.25}O{sub 2-δ} (RE = Y, Sm and La) were synthesized by citrate complexation method. • Ce{sub 0.75}Y{sub 0.25}O{sub 2-δ} exhibited the best stability for the decomposition of CH{sub 3}SH. • Cation radius played a key role in determining structure and surface characteristics. • Catalytic behavior depended on synergistic role of oxygen vacancies and basic sites. • Ce{sub 2}S{sub 3} accumulation on the surface was responsible for the deactivation of catalyst. - Abstract: A series of rare earth (Y, Sm and La) doped ceria composite oxides and pure CeO{sub 2} were synthesized and evaluated by conducting CH{sub 3}SH catalytic decomposition test. Several characterization studies, including XRD, BET, Raman, H{sub 2}-TPR, XPS, FT-IR, CO{sub 2}-TPD and CH{sub 3}SH-TPD, were undertaken to correlate structural and surface properties of the obtained ceria-based catalysts with their catalytic performance for CH{sub 3}SH decomposition. More oxygen vacancies and increased basic sites exhibited in the rare earth doped ceria catalysts. Y doped ceria sample (Ce{sub 0.75}Y{sub 0.25}O{sub 2-δ}), with a moderate increase in basic sites, contained more oxygen vacancies. More structural defects and active sites could be provided, and a relatively small amount of sulfur would accumulate, which resulted in better catalytic performance. The developed catalyst presented good catalytic behavior with stability very similar to that of typical zeolite-based catalysts reported previously. However, La doped ceria catalyst (Ce{sub 0.75}La{sub 0.25}O{sub 2-δ}) with the highest alkalinity was not the most active one. More sulfur species would be adsorbed and a large amount of cerium sulfide species (Ce{sub 2}S{sub 3}) would accumulate, which caused deactivation of the catalysts. The combined effect of increased oxygen vacancies and alkalinity led to the catalytic stability of Ce{sub 0.75}Sm{sub 0.25}O{sub 2-δ} sample was comparable to that of pure Ce

  15. Synthesis of three-dimensional rare-earth ions doped CNTs-GO-Fe{sub 3}O{sub 4} hybrid structures using one-pot hydrothermal method

    Energy Technology Data Exchange (ETDEWEB)

    Gao, Guo, E-mail: guogao@sjtu.edu.cn [Institute of Nano Biomedicine and Engineering, Department of Instrument Science and Technology, Key Laboratory for Thin Film and Microfabrication Technology of Ministry of Education, School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai 200240 (China); Zhang, Qiang; Cheng, Xin-Bing [Beijing Key Laboratory of Green Chemical Reaction Engineering and Technology, Department of Chemical Engineering, Tsinghua University, Beijing 100084 (China); Sun, Rongjin [Institute of Nano Biomedicine and Engineering, Department of Instrument Science and Technology, Key Laboratory for Thin Film and Microfabrication Technology of Ministry of Education, School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai 200240 (China); Shapter, Joseph G., E-mail: joe.shapter@flinders.edu.au [School of Chemical and Physical Sciences, Flinders University, Bedford Park, Adelaide 5042 (Australia); Yin, Ting [Institute of Nano Biomedicine and Engineering, Department of Instrument Science and Technology, Key Laboratory for Thin Film and Microfabrication Technology of Ministry of Education, School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai 200240 (China); Cui, Daxiang, E-mail: dxcui@sjtu.edu.cn [Institute of Nano Biomedicine and Engineering, Department of Instrument Science and Technology, Key Laboratory for Thin Film and Microfabrication Technology of Ministry of Education, School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai 200240 (China)

    2015-11-15

    Rechargeable lithium ion batteries (LIBs) are currently the dominant power source for all sorts of electronic devices due to their low cost and high energy density. The cycling stability of LIBs is significantly compromised due to the broad satellite peak for many anode materials. Herein, we develop a facile hydrothermal process for preparing rare-earth (Er, Tm) ions doped three-dimensional (3D) transition metal oxides/carbon hybrid nanocomposites, namely CNTs-GO-Fe{sub 3}O{sub 4}, CNTs-GO-Fe{sub 3}O{sub 4}-Er and CNTs-GO-Fe{sub 3}O{sub 4}-Tm. The GO sheets and CNTs are interlinked by ultrafine Fe{sub 3}O{sub 4} nanoparticles forming three-dimensional (3D) architectures. When evaluated as anode materials for LIBs, the CNTs-GO-Fe{sub 3}O{sub 4} hybrid composites have a bigger broad satellite peak. As for the CNTs-GO-Fe{sub 3}O{sub 4}-Er and CNTs-GO-Fe{sub 3}O{sub 4}-Tm hybrid composites, the broad satellite peak can be completely eliminated. When the current density changes from 5 C back to 0.1 C, the capacity of CNTs-GO-Fe{sub 3}O{sub 4}-Tm hybrid composites can recover to 1023.9 mAhg{sup −1}, indicating an acceptable rate capability. EIS tests show that the charge transfer resistance does not change significantly after 500 cycles, demonstrating that the cycling stability of CNTs-GO-Fe{sub 3}O{sub 4}-Tm hybrid composites are superior to CNTs-GO-Fe{sub 3}O{sub 4} and CNTs-GO-Fe{sub 3}O{sub 4}-Er hybrid structures. - Graphical abstract: One-pot hydrothermal method for synthesis of rare-earth ions doped CNTs-GO-Fe{sub 3}O{sub 4} hybrid structures as anode materials of LIBs have been reported. - Highlights: • We report the synthesis of rare-earth ions doped CNTs-GO-Fe{sub 3}O{sub 4} hybrid structures. • The hybrid structures can improve the cycling stability of lithium storage. • As for anode materials, the broad satellite peak can be completely eliminated. • When the rate return back to 0.1 C, the capacity can recover to 1023.9 mAhg{sup −1}. • After 500

  16. Synthesis of three-dimensional rare-earth ions doped CNTs-GO-Fe3O4 hybrid structures using one-pot hydrothermal method

    International Nuclear Information System (INIS)

    Gao, Guo; Zhang, Qiang; Cheng, Xin-Bing; Sun, Rongjin; Shapter, Joseph G.; Yin, Ting; Cui, Daxiang

    2015-01-01

    Rechargeable lithium ion batteries (LIBs) are currently the dominant power source for all sorts of electronic devices due to their low cost and high energy density. The cycling stability of LIBs is significantly compromised due to the broad satellite peak for many anode materials. Herein, we develop a facile hydrothermal process for preparing rare-earth (Er, Tm) ions doped three-dimensional (3D) transition metal oxides/carbon hybrid nanocomposites, namely CNTs-GO-Fe 3 O 4 , CNTs-GO-Fe 3 O 4 -Er and CNTs-GO-Fe 3 O 4 -Tm. The GO sheets and CNTs are interlinked by ultrafine Fe 3 O 4 nanoparticles forming three-dimensional (3D) architectures. When evaluated as anode materials for LIBs, the CNTs-GO-Fe 3 O 4 hybrid composites have a bigger broad satellite peak. As for the CNTs-GO-Fe 3 O 4 -Er and CNTs-GO-Fe 3 O 4 -Tm hybrid composites, the broad satellite peak can be completely eliminated. When the current density changes from 5 C back to 0.1 C, the capacity of CNTs-GO-Fe 3 O 4 -Tm hybrid composites can recover to 1023.9 mAhg −1 , indicating an acceptable rate capability. EIS tests show that the charge transfer resistance does not change significantly after 500 cycles, demonstrating that the cycling stability of CNTs-GO-Fe 3 O 4 -Tm hybrid composites are superior to CNTs-GO-Fe 3 O 4 and CNTs-GO-Fe 3 O 4 -Er hybrid structures. - Graphical abstract: One-pot hydrothermal method for synthesis of rare-earth ions doped CNTs-GO-Fe 3 O 4 hybrid structures as anode materials of LIBs have been reported. - Highlights: • We report the synthesis of rare-earth ions doped CNTs-GO-Fe 3 O 4 hybrid structures. • The hybrid structures can improve the cycling stability of lithium storage. • As for anode materials, the broad satellite peak can be completely eliminated. • When the rate return back to 0.1 C, the capacity can recover to 1023.9 mAhg −1 . • After 500 cycles, the hybrid structures still exhibited excellent cycling stability

  17. Crystal Growth and Spectroscopic characterization of chloride and bromide single crystals doped with rare earth ions for the mid infrared amplification

    International Nuclear Information System (INIS)

    Ferrier, A.

    2007-12-01

    This work is devoted to the study of low phonon energy crystals doped with rare earth ions for the realisation of diode-pumped solid state laser sources emitting in the middle infrared. For that purpose, pure and (Er 3+ or Pr 3+ ) doped single crystals of KPb 2 Cl 5 and Tl 3 PbX 5 (X=Cl, Br) have been elaborated by using the Bridgman-Stockbarger method. These non-hygroscopic and congruent melting materials have been found to exhibit phase transitions during the cooling process but which do not limit the elaboration of centimeter-size single crystals. The spectroscopic study of the Er 3+ doped compounds has been performed both at high and low temperatures. It thus appears that these systems present long fluorescence lifetimes and relatively large gain cross sections favorable for a laser emission around 4.5μm. It has been demonstrated further that the up-conversion processes resulting from excited-state absorptions of the Er 3+ ions around the pumping wavelength as well as the energy transfer processes between the Er 3+ ions do not lead to significant optical losses for the laser system. The derived parameters then have been used to build a model and simulate the laser operation of the system following diode pumping around 800 nm. In the end, the spectroscopic study of the Pr 3+ ion in various materials has allowed us to evidence large emission cross sections associated with long fluorescence lifetimes, now favorable to a laser emission around 5μm. (author)

  18. Rare-earth doped gadolinia based phosphors for potential multicolor and white light emitting deep UV LEDs.

    Science.gov (United States)

    Bedekar, Vinila; Dutta, Dimple P; Mohapatra, M; Godbole, S V; Ghildiyal, R; Tyagi, A K

    2009-03-25

    Gadolinium oxide host and europium/dysprosium/terbium doped gadolinium oxide nanoparticles were synthesized using the sonochemical technique. Gadolinium oxide nanocrystals were also co-doped with total 2 mol% of Eu(3+)/Dy(3+),Eu(3+)/Tb(3+),Dy(3+)/Tb(3+), and also Eu(3+)/Dy(3+)/Tb(3+) ions, by the same method. The nanoparticles obtained were characterized using powder x-ray diffraction (XRD), transmission electron microscopy (TEM), and selected area electron diffraction (SAED) techniques. The size of the particles ranged from 15 to 30 nm. The triple doped samples showed multicolor emission on single wavelength excitation. The photoluminescence results were correlated with the lifetime data to get an insight into the luminescence and energy transfer processes taking place in the system. On excitation at 247 nm, the novel nanocrystalline Gd(2)O(3):RE (RE = Dy, Tb) phosphor resulted in having very impressive CIE chromaticity coordinates of x = 0.315 and y = 0.316, and a correlated color temperature of 6508 K, which is very close to standard daylight.

  19. The Electronic Structures and Optical Properties of Alkaline-Earth Metals Doped Anatase TiO2: A Comparative Study of Screened Hybrid Functional and Generalized Gradient Approximation.

    Science.gov (United States)

    Ma, Jin-Gang; Zhang, Cai-Rong; Gong, Ji-Jun; Wu, You-Zhi; Kou, Sheng-Zhong; Yang, Hua; Chen, Yu-Hong; Liu, Zi-Jiang; Chen, Hong-Shan

    2015-08-24

    Alkaline-earth metallic dopant can improve the performance of anatase TiO2 in photocatalysis and solar cells. Aiming to understand doping mechanisms, the dopant formation energies, electronic structures, and optical properties for Be, Mg, Ca, Sr, and Ba doped anatase TiO2 are investigated by using density functional theory calculations with the HSE06 and PBE functionals. By combining our results with those of previous studies, the HSE06 functional provides a better description of electronic structures. The calculated formation energies indicate that the substitution of a lattice Ti with an AEM atom is energetically favorable under O-rich growth conditions. The electronic structures suggest that, AEM dopants shift the valence bands (VBs) to higher energy, and the dopant-state energies for the cases of Ca, Sr, and Ba are quite higher than Fermi levels, while the Be and Mg dopants result into the spin polarized gap states near the top of VBs. The components of VBs and dopant-states support that the AEM dopants are active in inter-band transitions with lower energy excitations. As to optical properties, Ca/Sr/Ba are more effective than Be/Mg to enhance absorbance in visible region, but the Be/Mg are superior to Ca/Sr/Ba for the absorbance improvement in near-IR region.

  20. The Electronic Structures and Optical Properties of Alkaline-Earth Metals Doped Anatase TiO2: A Comparative Study of Screened Hybrid Functional and Generalized Gradient Approximation

    Directory of Open Access Journals (Sweden)

    Jin-Gang Ma

    2015-08-01

    Full Text Available Alkaline-earth metallic dopant can improve the performance of anatase TiO2 in photocatalysis and solar cells. Aiming to understand doping mechanisms, the dopant formation energies, electronic structures, and optical properties for Be, Mg, Ca, Sr, and Ba doped anatase TiO2 are investigated by using density functional theory calculations with the HSE06 and PBE functionals. By combining our results with those of previous studies, the HSE06 functional provides a better description of electronic structures. The calculated formation energies indicate that the substitution of a lattice Ti with an AEM atom is energetically favorable under O-rich growth conditions. The electronic structures suggest that, AEM dopants shift the valence bands (VBs to higher energy, and the dopant-state energies for the cases of Ca, Sr, and Ba are quite higher than Fermi levels, while the Be and Mg dopants result into the spin polarized gap states near the top of VBs. The components of VBs and dopant-states support that the AEM dopants are active in inter-band transitions with lower energy excitations. As to optical properties, Ca/Sr/Ba are more effective than Be/Mg to enhance absorbance in visible region, but the Be/Mg are superior to Ca/Sr/Ba for the absorbance improvement in near-IR region.

  1. Effect of doping rare earths on magnetostriction characteristics of CoFe2O4 prepared from spent Li-ion batteries

    Science.gov (United States)

    Xi, Guoxi; Zhao, Tingting; Wang, Lu; Dun, Changwei; Zhang, Ye

    2018-04-01

    Recovering spent Li-ion batteries is beneficial to the economy and environment. Therefore, this study synthesized nanoparticles of cobalt ferrite doped with different rare earth ions (Nd, Ce, and Pr) by a sol-gel auto-combustion method using spent Li-ion batteries. The effect of the different doping elements on grain sizes, structure, magnetic and magnetostrictive properties, and strain derivative were confirmed by X-ray diffraction, scanning election microscopy, vibrating sample magnetometer, and a magnetostrictive coefficient measuring system. Substitution of a small amount of Fe3+ with RE3+ in CoRExFe2-xO4 (x = 0.025, 0.05, and 0.1) had a large effect on magnetostrictive properties and strain derivative, which was improved compared with pure cobalt ferrite at low magnetic field. The maximum strain derivative (dλ/dH = -1.49 × 10-9 A-1 m at 18 kA m-1) was obtained for Nd, x = 0.05. Changes in the magnetostriction coefficients and strain derivatives were correlated with changes in cation distribution, microstructure, and magnetic anisotropy, which depended strongly on RE3+ substitution and distribution in the spinel structure.

  2. Structural and optical studies of nano-structure silica gel doped with different rare earth elements, prepared by two different sol -gel techniques

    International Nuclear Information System (INIS)

    Battisha, I.K.; El Beyally, A.; Seliman, S.I.; El Nahrawi, A.S.

    2005-01-01

    Structural and optical characteristics of pure silica gel (silica-xerogel, SiO 2 ) and doped with different concentrations ranging from 1 up to 6% of some rare earth (REEs) ions such as, praseodymium Pr +3 ,and Europium Eu +3 , Erbium Er +3 and Holmium Ho +3 , ions, in the form of thin film and monolith materials were prepared by sol - gel technique, Using tetra-ethoxysilane as precursor materials, which are of particular interest for sol-gel integrated optics applications. Some structural and optical features of sol-gel derived monolith and thin films are analyzed and compared, namely the structure of nano-particle monolith and thin film silica-gel samples, based on X-ray diffraction (XRD). The types of structural information obtainable are compared in detail. It is show that the XRD spectra of a-cristobalite are obtained for the two type materials and even by doping with the four REEs ions. Optical measurements of monolith and thin films were also studied and compared, the normal transmission and specular reflection were measured. The refractive index were calculated and discussed

  3. Proceedings of the specialist research meetings on semiconductors with research reactors

    International Nuclear Information System (INIS)

    Kawakubo, Tetsuya; Kimura, Itsuro

    1987-01-01

    The meeting was proceeded divided five sessions, (I) structure analysis of semiconductors with neutrons, (II) structure analysis with positrons, (III) neutron transmutation doping and radiation damage, (IV) discussion on the way of research on semiconductors in the Institute. (author)

  4. Self-assembling peptide semiconductors

    Science.gov (United States)

    Tao, Kai; Makam, Pandeeswar; Aizen, Ruth; Gazit, Ehud

    2017-01-01

    Semiconductors are central to the modern electronics and optics industries. Conventional semiconductive materials bear inherent limitations, especially in emerging fields such as interfacing with biological systems and bottom-up fabrication. A promising candidate for bioinspired and durable nanoscale semiconductors is the family of self-assembled nanostructures comprising short peptides. The highly ordered and directional intermolecular π-π interactions and hydrogen-bonding network allow the formation of quantum confined structures within the peptide self-assemblies, thus decreasing the band gaps of the superstructures into semiconductor regions. As a result of the diverse architectures and ease of modification of peptide self-assemblies, their semiconductivity can be readily tuned, doped, and functionalized. Therefore, this family of electroactive supramolecular materials may bridge the gap between the inorganic semiconductor world and biological systems. PMID:29146781

  5. Influence of small metallic particles on the absorption and emission in amorphous materials doped with rare earths

    International Nuclear Information System (INIS)

    Malta, O.L.; Santa Cruz, P.A.; Sa, G.F. de

    1987-01-01

    The influence of small metallic clusters on the absorption and emission processes in molecular species shows a great interest as well the fundamental as the pratical point of view. This subject, which has been recently developed, covers several aspects related to the kinetics of formation of these chusters and to theirs optical properties in amorphous media. A study of this problem developed by the first time for the case of one volumetric distribution of metallic particles is presented. With this aim, fluoborate glasses doped with Eu 3+ ion which fluorescence is well known in several materials are used. (L.C.) [pt

  6. Ga vacancy induced ferromagnetism enhancement and electronic structures of RE-doped GaN

    International Nuclear Information System (INIS)

    Zhong Guohua; Zhang Kang; He Fan; Ma Xuhang; Lu Lanlan; Liu Zhuang; Yang Chunlei

    2012-01-01

    Because of their possible applications in spintronic and optoelectronic devices, GaN dilute magnetic semiconductors (DMSs) doped by rare-earth (RE) elements have attracted much attention since the high Curie temperature was obtained in RE-doped GaN DMSs and a colossal magnetic moment was observed in the Gd-doped GaN thin film. We have systemically studied the GaN DMSs doped by RE elements (La, Ce-Yb) using the full-potential linearized augmented plane wave method within the framework of density functional theory and adding the considerations of the electronic correlation and the spin-orbital coupling effects. We have studied the electronic structures of DMSs, especially for the contribution from f electrons. The origin of magnetism, magnetic interaction and the possible mechanism of the colossal magnetic moment were explored. We found that, for materials containing f electrons, electronic correlation was usually strong and the spin-orbital coupling was sometimes crucial in determining the magnetic ground state. It was found that GaN doped by La was non-magnetic. GaN doped by Ce, Nd, Pm, Eu, Gd, Tb and Tm are stabilized at antiferromagnetic phase, while GaN doped by other RE elements show strong ferromagnetism which is suitable materials for spintronic devices. Moreover, we have identified that the observed large enhancement of magnetic moment in GaN is mainly caused by Ga vacancies (3.0μB per Ga vacancy), instead of the spin polarization by magnetic ions or originating from N vacancies. Various defects, such as substitutional Mg for Ga, O for N under the RE doping were found to bring a reduction of ferromagnetism. In addition, intermediate bands were observed in some systems of GaN:RE and GaN with intrinsic defects, which possibly opens the potential application of RE-doped semiconductors in the third generation high efficiency photovoltaic devices.

  7. High Thermoelectric Performance by Convergence of Bands in IV-VI Semiconductors, Heavily Doped PbTe, and Alloys/Nanocomposites

    Science.gov (United States)

    Snyder, G. Jeffrey (Inventor); Pei, Yanzhong (Inventor)

    2015-01-01

    The present invention teaches an effective mechanism for enhancing thermoelectric performance through additional conductive bands. Using heavily doped p-PbTe materials as an example, a quantitative explanation is disclosed, as to why and how these additional bands affect the figure of merit. A high zT of approaching 2 at high temperatures makes these simple, likely more stable (than nanostructured materials) and Tl-free materials excellent for thermoelectric applications.

  8. Simultaneous cross-linking and p-doping of a polymeric semiconductor film by immersion into a phosphomolybdic acid solution for use in organic solar cells.

    Science.gov (United States)

    Aizawa, Naoya; Fuentes-Hernandez, Canek; Kolesov, Vladimir A; Khan, Talha M; Kido, Junji; Kippelen, Bernard

    2016-03-07

    Poly[N-9'-heptadecanyl-2,7-carbazole-alt-5,5-(4',7'-di-2-thienyl-2',1',3'-benzothiadiazole)] (PCDTBT) is shown to be simultaneously cross-linked and p-doped when immersed into a phosphomolybdic acid solution, yielding conductive films with low solubility that can withstand the solution processing of subsequent photoactive layers. Such a modified PCDTBT film serves to improve hole collection and limit carrier recombination in organic solar cells.

  9. Isotopically controlled semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Haller, Eugene E.

    2006-06-19

    The following article is an edited transcript based on the Turnbull Lecture given by Eugene E. Haller at the 2005 Materials Research Society Fall Meeting in Boston on November 29, 2005. The David Turnbull Lectureship is awarded to recognize the career of a scientist who has made outstanding contributions to understanding materials phenomena and properties through research, writing, and lecturing, as exemplified by the life work of David Turnbull. Haller was named the 2005 David Turnbull Lecturer for his 'pioneering achievements and leadership in establishing the field of isotopically engineered semiconductors; for outstanding contributions to materials growth, doping and diffusion; and for excellence in lecturing, writing, and fostering international collaborations'. The scientific interest, increased availability, and technological promise of highly enriched isotopes have led to a sharp rise in the number of experimental and theoretical studies with isotopically controlled semiconductor crystals. This article reviews results obtained with isotopically controlled semiconductor bulk and thin-film heterostructures. Isotopic composition affects several properties such as phonon energies, band structure, and lattice constant in subtle, but, for their physical understanding, significant ways. Large isotope-related effects are observed for thermal conductivity in local vibrational modes of impurities and after neutron transmutation doping. Spectacularly sharp photoluminescence lines have been observed in ultrapure, isotopically enriched silicon crystals. Isotope multilayer structures are especially well suited for simultaneous self- and dopant-diffusion studies. The absence of any chemical, mechanical, or electrical driving forces makes possible the study of an ideal random-walk problem. Isotopically controlled semiconductors may find applications in quantum computing, nanoscience, and spintronics.

  10. The analytical approach to the multi-state lasing phenomenon in undoped and p-doped InAs/InGaAs semiconductor quantum dot lasers

    Science.gov (United States)

    Korenev, Vladimir V.; Savelyev, Artem V.; Zhukov, Alexey E.; Omelchenko, Alexander V.; Maximov, Mikhail V.

    2014-05-01

    We introduce an analytical approach to the multi-state lasing phenomenon in p-doped and undoped InAs/InGaAs quantum dot lasers which were studied both theoretically and experimentally. It is shown that the asymmetry in charge carrier distribution in quantum dots as well as hole-to-electron capture rate ratio jointly determine laser's behavior in such a regime. If the ratio is lower than a certain critical value, the complete quenching of ground-state lasing takes place at sufficiently high injection currents; at higher values of the ratio, our model predicts saturation of the ground-state power. It was experimentally shown that the modulation p-doping of laser's active region results in increase of output power emitted via the ground-state optical transitions of quantum dots and in enhancement of the injection currents range in which multi-state lasing takes place. The maximum temperature at which multi-state lasing exists was increased by about 50°C in the p-doped samples. These effects are qualitatively explained in the terms of the proposed model.

  11. Electrowetting on semiconductors

    Science.gov (United States)

    Palma, Cesar; Deegan, Robert

    2015-01-01

    Applying a voltage difference between a conductor and a sessile droplet sitting on a thin dielectric film separating it from the conductor will cause the drop to spread. When the conductor is a good metal, the change of the drop's contact angle due to the voltage is given by the Young-Lippmann (YL) equation. Here, we report experiments with lightly doped, single crystal silicon as the conductive electrode. We derive a modified YL equation that includes effects due to the semiconductor and contact line pinning. We show that light induces a non-reversible wetting transition, and that our model agrees well with our experimental results.

  12. Nanocrystalline Mn-Mo-Ce Oxide Anode Doped Rare Earth Ce and Its Selective Electro-catalytic Performance

    Directory of Open Access Journals (Sweden)

    SHI Yan-hua

    2017-09-01

    Full Text Available The anode oxide of nanocrystalline Mn-Mo-Ce was prepared by anode electro-deposition technology, and its nanostructure and selective electro-catalytic performance were investigated using the SEM, EDS, XRD, HRTEM, electrochemical technology and oxygen evolution efficiency testing. Furthermore, the selective electro-catalytic mechanism of oxygen evolution and chlorine depression was discussed. The results show that the mesh-like nanostructure Mn-Mo-Ce oxide anode with little cerium doped is obtained, and the oxygen evolution efficiency for the anode in the seawater is 99.51%, which means a high efficiency for the selective electro-catalytic for the oxygen evolution. Due to the structural characteristics of γ-MnO2, the OH- ion is preferentially absorbed, while Cl- absorption is depressed. OH- accomplishes the oxygen evolution process during the valence transition electrocatalysis of Mn4+/Mn3+, completing the selective electro-catalysis process. Ce doping greatly increases the reaction activity, and promotes the absorption and discharge; the rising interplanar spacing between active (100 crystalline plane promotes OH- motion and the escape of newborn O2, so that the selective electro-catalytic property with high efficient oxygen evolution and chlorine depression is achieved from the nano morphology effect.

  13. Radiological and Nuclear Detection Material Science: Novel Rare-Earth Semiconductors for Solid-State Neutron Detectors and Thin High-k Dielectrics

    Science.gov (United States)

    2017-11-01

    6201 Fort Belvoir, VA 22060-6201 T E C H N IC A L R E P O R T DTRA-TR-15-82 Radiological and Nuclear Detection Material Science : Novel...P.A. Dowben, “Surface Charging at the (100) Surface of Cu doped and undoped Li2B4O7”, Applied Surface Science 257 (2011) 3399-3403 27. S.R...V.T. Adamiv, Ya.V. Burak, P.A. Dowben, “The local structure of Mn doped Li2B4O7(001)”, in preparation for Materials Science and Engineering B 40. C

  14. Foreword: Focus on Superconductivity in Semiconductors

    Directory of Open Access Journals (Sweden)

    Yoshihiko Takano

    2008-01-01

    Full Text Available Since the discovery of superconductivity in diamond, much attention has been given to the issue of superconductivity in semiconductors. Because diamond has a large band gap of 5.5 eV, it is called a wide-gap semiconductor. Upon heavy boron doping over 3×1020 cm−3, diamond becomes metallic and demonstrates superconductivity at temperatures below 11.4 K. This discovery implies that a semiconductor can become a superconductor upon carrier doping. Recently, superconductivity was also discovered in boron-doped silicon and SiC semiconductors. The number of superconducting semiconductors has increased. In 2008 an Fe-based superconductor was discovered in a research project on carrier doping in a LaCuSeO wide-gap semiconductor. This discovery enhanced research activities in the field of superconductivity, where many scientists place particular importance on superconductivity in semiconductors.This focus issue features a variety of topics on superconductivity in semiconductors selected from the 2nd International Workshop on Superconductivity in Diamond and Related Materials (IWSDRM2008, which was held at the National Institute for Materials Science (NIMS, Tsukuba, Japan in July 2008. The 1st workshop was held in 2005 and was published as a special issue in Science and Technology of Advanced Materials (STAM in 2006 (Takano 2006 Sci. Technol. Adv. Mater. 7 S1.The selection of papers describe many important experimental and theoretical studies on superconductivity in semiconductors. Topics on boron-doped diamond include isotope effects (Ekimov et al and the detailed structure of boron sites, and the relation between superconductivity and disorder induced by boron doping. Regarding other semiconductors, the superconducting properties of silicon and SiC (Kriener et al, Muranaka et al and Yanase et al are discussed, and In2O3 (Makise et al is presented as a new superconducting semiconductor. Iron-based superconductors are presented as a new series of high

  15. Investigation of hyperfine parameters of semiconductor oxides SnO2 and TiO2 pure and doped with 3d transition methods using spectroscopy of perturbed gamma-gamma angular correlation

    International Nuclear Information System (INIS)

    Schell, Juliana

    2015-01-01

    This study aimed the use of nuclear technique Perturbed γ-γ Angular Correlation Spectroscopy (PAC) to measure the hyperfine interactions in thin films and powder samples of SnO 2 and TiO 2 pure and doped with transition metals to obtain a systematic investigation of defects and magnetism from an atomic point of view with the main motivation the application in spintronics. The work also focused on the preparation and characterization of samples by conventional techniques such as X-ray diffraction, scanning electron microscopy, energy dispersive spectroscopy and magnetization measurements. Pure samples of the films were measured by the systematic variation of thermal treatment and applied magnetic field. These measurements were performed in HISKP at the University of Bonn (Rheinische Friedrich-Wilhelms-Universität Bonn) using 111 In( 111 Cd) or 181 Hf ( 181 Ta); at IPEN, in turn, these measurements were performed after the diffusion of the same probe nuclei. Another part of PAC measurements were carried out using 111 mCd( 111 Cd) and 117 Cd ( 117 In) in Isotope Mass Separator On-Line (ISOLDE) at Centre Européen Recherche Nucléaire (CERN). The measurements were performed from 8 K to 1173 K. After comparing results from macroscopic techniques with those from PAC, it was concluded that there is a correlation between the defects, magnetism and the mobility of charge carriers in semiconductors studied here. A step forward in the search for semiconductors, whose magnetic ordering allows its use in electronics based on spin. Some results have been published, including results obtained at the University of Bonn for the sandwich doctorate period [1-7]. (author)

  16. Passively Q-switched dual-wavelength thulium-doped fiber laser based on a multimode interference filter and a semiconductor saturable absorber

    Science.gov (United States)

    Wang, M.; Huang, Y. J.; Ruan, S. C.

    2018-04-01

    In this paper, we have demonstrated a theta cavity passively Q-switched dual-wavelength fiber laser based on a multimode interference filter and a semiconductor saturable absorber. Relying on the properties of the fiber theta cavity, the laser can operate unidirectionally without an optical isolator. A semiconductor saturable absorber played the role of passive Q-switch while a section of single-mode-multimode-single-mode fiber structure served as an multimode interference filter and was used for selecting the lasing wavelengths. By suitably manipulating the polarization controller, stable dual-wavelength Q-switched operation was obtained at ~1946.8 nm and ~1983.8 nm with maximum output power and minimum pulse duration of ~47 mW and ~762.5 ns, respectively. The pulse repetition rate can be tuned from ~20.2 kHz to ~79.7 kHz by increasing the pump power from ~2.12 W to ~5.4 W.

  17. Semiconductor Manufacturing equipment introduction

    International Nuclear Information System (INIS)

    Im, Jong Sun

    2001-02-01

    This book deals with semiconductor manufacturing equipment. It is comprised of nine chapters, which are manufacturing process of semiconductor device, history of semiconductor manufacturing equipment, kinds and role of semiconductor manufacturing equipment, construction and method of semiconductor manufacturing equipment, introduction of various semiconductor manufacturing equipment, spots of semiconductor manufacturing, technical elements of semiconductor manufacturing equipment, road map of technology of semiconductor manufacturing equipment and semiconductor manufacturing equipment in the 21st century.

  18. Tunable optical properties of some rare earth elements-doped mayenite Ca12Al14O33 nanopowders elaborated by oxalate precursor route

    Science.gov (United States)

    Rashad, Mohamed M.; Mostafa, Ahmed G.; Mwakikunga, Bonex W.; Rayan, Diaa A.

    2017-01-01

    Rare earth (RE) ions-doped mayenite Ca12Al14- x RE x O33 nanopowders (where RE = La and Gd and x = 0-1.0) were synthesized using the oxalate precursor technique. The as-prepared precursors were calcined at 800 °C for 2 h. Obviously, all RE-doped Ca12Al14- x RE x O33 possessed a well-crystalline cubic mayenite phase till RE content of 0.8. The crystallo-chemical aspects including crystallite size, lattice parameters, theoretical X-ray density and bulk density were robustly on RE nature and ratio. The microstructure and the average grain size were significantly influenced by the RE kind and content. The high transparency of Ca12Al14- x RE x O33 over 80% was found to be evinced in the visible wavelength range of 400-800 nm. Besides, the incorporation of RE cation minimized the direct band gap energy from 4.42 eV for pure mayenite to 3.85 and 3.59 eV with x value 1.0 of La3+ and Gd3+ ions. The photoluminescence spectra of pure mayenite nanoparticles showed that the band edge emission ( λ exc = 248 nm) with an intense visible emission band at 360 nm was detected. Otherwise, the band edge emission showed a slight shift toward short wavelength due to the substitution Al3+ by RE3+ ions. Such results open a new avenue for application of mayenite as a good candidate for transparent low-temperature electron conductor for optoelectronics applications.

  19. Semiconductor spintronics

    CERN Document Server

    Xia, Jianbai; Chang, Kai

    2012-01-01

    Semiconductor Spintronics, as an emerging research discipline and an important advanced field in physics, has developed quickly and obtained fruitful results in recent decades. This volume is the first monograph summarizing the physical foundation and the experimental results obtained in this field. With the culmination of the authors' extensive working experiences, this book presents the developing history of semiconductor spintronics, its basic concepts and theories, experimental results, and the prospected future development. This unique book intends to provide a systematic and modern foundation for semiconductor spintronics aimed at researchers, professors, post-doctorates, and graduate students, and to help them master the overall knowledge of spintronics.

  20. Non-linear spin transport in magnetic semiconductor superlattices

    International Nuclear Information System (INIS)

    Bejar, Manuel; Sanchez, David; Platero, Gloria; MacDonald, A.H.

    2004-01-01

    The electronic spin dynamics in DC-biased n-doped II-VI semiconductor multiquantum wells doped with magnetic impurities is presented. Under certain range of electronic doping, conventional semiconductor superlattices present self-sustained oscillations. Magnetically doped wells (Mn) present large spin splittings due to the exchange interaction. The interplay between non-linear interwell transport, the electron-electron interaction and the exchange between electrons and the magnetic impurities produces interesting time-dependent features in the spin polarization current tuned by an external magnetic field

  1. (Sr{sub 1-x}Na{sub x})(Cd{sub 1-x}Mn{sub x}){sub 2}As{sub 2}: A new charge and spin doping decoupled diluted magnetic semiconductors with CaAl{sub 2}Si{sub 2}-type structure

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Bijuan; Deng, Zheng; Li, Wenmin; Gao, Moran; Zhao, Guoqiang; Yu, Shuang; Wang, Xiancheng; Liu, Qingqing [Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China); Li, Zhi [School of Materials Science and Engineering, Hefei University of Technology, Hefei, Anhui 230009 (China); Jin, Changqing, E-mail: Jin@iphy.ac.cn [Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China); Collaborative Innovation Center of Quantum Matter, Beijing 100190 (China)

    2016-08-28

    We report the synthesis and characterization of a new bulk diluted ferromagnetic semiconductor via Na and Mn co-doping in SrCd{sub 2}As{sub 2} with a hexagonal CaAl{sub 2}Si{sub 2}-type structure. Together with carrier doping via (Sr,Na) substitution, spin doping via (Cd,Mn) substitution results in ferromagnetic order with Curie temperature of T{sub C} up to 13 K. Negative magnetoresistance is assigned to weak localization at low temperatures, where the magnetization of samples becomes saturated. The hexagonal structure of (Sr{sub 1−x}Na{sub x})(Cd{sub 1−x}Mn{sub x}){sub 2}As{sub 2} can be acted as a promising candidate for spin manipulations owing to its relatively small coercive field of less than 24 Oe.

  2. Observation of high magnetocrystalline anisotropy on Co doping in rare earth free Fe2P magnetic material

    Science.gov (United States)

    Thakur, Jyoti; Singh, Om Pal; Tomar, Monika; Gupta, Vinay; Kashyap, Manish K.

    2018-04-01

    ab-initio investigation of magnetocrystalline anisotropy energy (MAE) for Fe2P and CoFeP using density functional theory based full-potential linear augmented plane wave (FPLAPW) is reported. CoFeP alloy exhibits large magnetic moment 13.28 µB and enhanced anisotropy energy reaching as high as 1326 µeV/f.u. This energy is nearly doubled as compared to its parent Fe2P alloy, making this system a promising candidate for a rare earth free permanent magnet. Substituitng Co at Fe-3f site in Fe2P helps in stabilizing the new structure and further improves the magnetic properties.

  3. XAS study of V2O5/Al2O3 catalysts doped with rare earth oxides

    International Nuclear Information System (INIS)

    Centeno, M.A.; Malet, P.; Capitan, M.J.; Benitez, J.J.; Carrizosa, I.; Odriozola, J.A.

    1995-01-01

    This paper reports on XAS studies of well dispersed V 2 O 5 /Al 2 O 3 and V 2 O 5 /Sm 2 O 3 /Al 2 O 3 samples. XAS spectra at V-K and Sm-L III edges show that the rare earth oxide favours the formation of regular tetrahedral units, [VO 4 ], over the surface of the support. Positions of the preedge peak at the V-K edge, and intensities of the white line at the Sm-L III edge also suggest modifications in the electronic density around V and Sm atoms when they are simultaneously supported over Al 2 O 3 . ((orig.))

  4. Raman and infrared spectroscopy of pure and doped GdAlO3 with rare earth ions

    International Nuclear Information System (INIS)

    Bagnato, V.S.

    1983-01-01

    IR and Raman measurements were carried out in pure and Eu +3 - doped GdAlO 3 with the purpose of understanding their K=O phonom modes and the Eu +3 electronic transitions. Starting from the GdAlO 3 symmetry, (D1 6 sub(2h)), the correlation method allows the classification of the number and symmetries of the modes, as well their assignement as either internal or external. Experimental and theoretical results are in good agreement and show three well defined absorption bands in GdAlO 3 . The internal modes are found to be located around 670 cm -1 (stretching) and 480 cm -1 (bending), while the external modes are around 200 cm -1 . The interaction of Eu +3 electronic states with the GdAlO 3 crystal field were studied by taking into account a small perturbative orthorrombic (C sub(s)) distortion on a crystal field with symmetry O sub(h). This small distortion lifts completely the degeneracy of the 7 F sub(J) (J=0,1,...,6) levels and allows the 7 J sub(o) → 7 F sub(J) transitions. (Author) [pt

  5. Semiconductors for plasmonics and metamaterials

    DEFF Research Database (Denmark)

    Naik, G.V.; Boltasseva, Alexandra

    2010-01-01

    Plasmonics has conventionally been in the realm of metal-optics. However, conventional metals as plasmonic elements in the near-infrared (NIR) and visible spectral ranges suffer from problems such as large losses and incompatibility with semiconductor technology. Replacing metals with semiconduct......Plasmonics has conventionally been in the realm of metal-optics. However, conventional metals as plasmonic elements in the near-infrared (NIR) and visible spectral ranges suffer from problems such as large losses and incompatibility with semiconductor technology. Replacing metals...... with semiconductors can alleviate these problems if only semiconductors could exhibit negative real permittivity. Aluminum doped zinc oxide (AZO) is a low loss semiconductor that can show negative real permittivity in the NIR. A comparative assessment of AZO-based plasmonic devices such as superlens and hyperlens...... with their metal-based counterparts shows that AZO-based devices significantly outperform at a wavelength of 1.55 µm. This provides a strong stimulus in turning to semiconductor plasmonics at the telecommunication wavelengths. (© 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)....

  6. Fabrication of prototypes of Ge(li) semiconductor detector

    International Nuclear Information System (INIS)

    Santos, W.M.S.; Marti, G.V.; Rizzo, P.; Barros, S. de.

    1987-01-01

    The fabrication process of Ge(Li) semiconductor detector prototypes, from specific chemical treatments of doped monocrystal with receptor impurities (p + semicondutor) is presented. The detector characteristics, such as resulotion and operation tension are shown. (M.C.K.) [pt

  7. Physical and electrical characteristics of AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors with rare earth Er2O3 as a gate dielectric

    International Nuclear Information System (INIS)

    Lin, Ray-Ming; Chu, Fu-Chuan; Das, Atanu; Liao, Sheng-Yu; Chou, Shu-Tsun; Chang, Liann-Be

    2013-01-01

    In this study, the rare earth erbium oxide (Er 2 O 3 ) was deposited using an electron beam onto an AlGaN/GaN heterostructure to fabricate metal-oxide-semiconductor high-electron-mobility transistors (MOS–HEMTs) that exhibited device performance superior to that of a conventional HEMT. Under similar bias conditions, the gate leakage currents of these MOS–HEMT devices were four orders of magnitude lower than those of conventional Schottky gate HEMTs. The measured sub-threshold swing (SS) and the effective trap state density (N t ) of the MOS–HEMT were 125 mV/decade and 4.3 × 10 12 cm −2 , respectively. The dielectric constant of the Er 2 O 3 layer in this study was 14, as determined through capacitance–voltage measurements. In addition, the gate–source reverse breakdown voltage increased from –166 V for the conventional HEMT to –196 V for the Er 2 O 3 MOS–HEMT. - Highlights: ► GaN/AlGaN/Er 2 O 3 metal-oxide semiconductor high electron mobility transistor ► Physical and electrical characteristics are presented. ► Electron beam evaporated Er 2 O 3 with excellent surface roughness ► Device exhibits reduced gate leakage current and improved I ON /I OFF ratio

  8. Ion implantation in semiconductors and other materials

    International Nuclear Information System (INIS)

    Guernet, G.; Bruel, M.; Gailliard, J.P.; Garcia, M.; Robic, J.Y.

    1977-01-01

    The evolution of ion implantation techniques in the field of semiconductors and its extension to various fields such as metallurgy, mechanics, superconductivity and opto-electronics are considered. As for semiconductors ion implantation is evoked as: a means of predeposition of impurities at low doping level (10 11 to 10 14 cm -2 ); a means for obtaining profiles of controlled concentration; a means of reaching high doping levels with using 'strong current' implantation machines of the second generation. Some results obtained are presented [fr

  9. Ionic exchange of Hf donor impurities in the wide-gap semiconductor Tm2O3

    International Nuclear Information System (INIS)

    Munoz, E.L.; Darriba, G.N.; Bibiloni, A.G.; Errico, L.A.; Renteria, M.

    2010-01-01

    The ionic exchange of Hf donor impurities in substitutional cationic sites of the cubic (bixbyite) phase of the wide-gap semiconductor Tm 2 O 3 was studied. The doping process was performed by ball-milling-assisted solid-state reaction of Tm 2 O 3 and neutron-activated m-HfO 2 . 181 Ta atoms, obtained by the β-decay of the 181 Hf-isotope, were used as probes in time-differential perturbed-angular-correlation (TDPAC) experiments carried out after each step of the doping process. The measured hyperfine interactions at 181 Ta sites enabled the electric-field gradient (EFG) characterization at representative Hf impurity sites of each step of the process. The efficiency and substitutional character of the exchange process is discussed and elucidated in the framework of an empirical EFG systematic established in isostructural rare-earth bixbyite sesquioxides.

  10. Semiconductor spintronics

    International Nuclear Information System (INIS)

    Fabian, J.; Abiague, A.M.; Ertler, Ch.; Stano, P.; Zutic, I.

    2007-01-01

    Spintronics refers commonly to phenomena in which the spin of electrons in a solid state environment plays the determining role. In a more narrow sense spintronics is an emerging research field of electronics: spintronics devices are based on a spin control of electronics, or on an electrical and optical control of spin of magnetism. While metal spintronics has already found its niche in the computer industry - giant magnetoresistance systems are used as hard disk read heads - semiconductor spintronics is vet demonstrate its full potential. This review presents selected themes of semiconductor spintronics, introducing important concepts in spin transport, spin transport, spin injection. Silsbee-Johnson spin-charge coupling, and spin-dependent tunneling, as well as spin relaxation and spin dynamics. The most fundamental spin-dependent interaction in nonmagnetic semiconductors is spin-orbit coupling. Depending on the crystal symmetries of the material, as well as on the structural properties of semiconductor based heterostructures, the spin-orbit coupling takes on different functional forms, giving a nice playground of effective spin-orbit Hamiltonians. The effective Hamiltonians for the most relevant classes of materials and heterostructures are derived here from realistic electronic band structure descriptions. Most semiconductor device systems are still theoretical concepts, waiting for experimental demonstrations. A review of selected proposed, and a few demonstrated devices is presented, with detailed description of two important classes: magnetic resonant tunnel structures and bipolar magnetic diodes and transistors. In view of the importance of ferromagnetic semiconductor material, a brief discussion of diluted magnetic semiconductors is included. In most cases the presentation is of tutorial style, introducing the essential theoretical formalism at an accessible level, with case-study-like illustrations of actual experimental results, as well as with brief

  11. Modification of semiconductors with proton beams. A review

    International Nuclear Information System (INIS)

    Kozlovskii, V.V.; Lomasov, V.N.; Kozlov, V.A.

    2000-01-01

    Analysis is given of the progress in the modification of semiconductors by proton beams in fields such as proton-enhanced diffusion, ion-beam mixing, and formation of porous layers. This method of modification (doping) is shown to have high potential in monitoring the properties of semiconductor materials and designing devices of micro and nano electronics as compared to the conventional doping techniques such as thermal diffusion, epitaxy, and ion implantation

  12. Production of Rare Earth Isotope Beams for Radiotracer-DLTS on SiC

    CERN Multimedia

    2002-01-01

    Electrical properties of semiconductors are extremely sensitive to minor traces of impurities and defects. This fact allows to intentionally modify material properties and is thus the very basis of semiconductor electronics and optoelectronics. In the present project, electronic properties and doping effects of rare-earth elements in the technologically important semiconductor SiC are to be investigated using optical and electrical characterization techniques like Photoluminescence, Deep Level Transient Spectroscopy and Thermal Admittance Spectroscopy. By using the elemental transmutation of radioactive isotopes as a tracer, it will be guaranteed that the impurity-related band gap states can definitively be distinguished from intrinsic or process-induced defects. For SiC up to now only detailed investigation of Er- related deep levels have been reported, preliminary data exist for Sm- and Gd- impurities. In this project we propose the implantation of Pr and Eu isotopes for detailed level studies.

  13. Novel room temperature ferromagnetic semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Gupta, Amita [KTH Royal Inst. of Technology, Stockholm (Sweden)

    2004-06-01

    Today's information world, bits of data are processed by semiconductor chips, and stored in the magnetic disk drives. But tomorrow's information technology may see magnetism (spin) and semiconductivity (charge) combined in one 'spintronic' device that exploits both charge and 'spin' to carry data (the best of two worlds). Spintronic devices such as spin valve transistors, spin light emitting diodes, non-volatile memory, logic devices, optical isolators and ultra-fast optical switches are some of the areas of interest for introducing the ferromagnetic properties at room temperature in a semiconductor to make it multifunctional. The potential advantages of such spintronic devices will be higher speed, greater efficiency, and better stability at a reduced power consumption. This Thesis contains two main topics: In-depth understanding of magnetism in Mn doped ZnO, and our search and identification of at least six new above room temperature ferromagnetic semiconductors. Both complex doped ZnO based new materials, as well as a number of nonoxides like phosphides, and sulfides suitably doped with Mn or Cu are shown to give rise to ferromagnetism above room temperature. Some of the highlights of this work are discovery of room temperature ferromagnetism in: (1) ZnO:Mn (paper in Nature Materials, Oct issue, 2003); (2) ZnO doped with Cu (containing no magnetic elements in it); (3) GaP doped with Cu (again containing no magnetic elements in it); (4) Enhancement of Magnetization by Cu co-doping in ZnO:Mn; (5) CdS doped with Mn, and a few others not reported in this thesis. We discuss in detail the first observation of ferromagnetism above room temperature in the form of powder, bulk pellets, in 2-3 mu-m thick transparent pulsed laser deposited films of the Mn (<4 at. percent) doped ZnO. High-resolution transmission electron microscopy (HRTEM) and electron energy loss spectroscopy (EELS) spectra recorded from 2 to 200nm areas showed homogeneous

  14. Plasmon-Assisted Efficiency Enhancement of Eu3+-Doped Tellurite Glass-Covered Solar Cells

    Science.gov (United States)

    Lima, Bismarck C.; Gómez-Malagón, L. A.; Gomes, A. S. L.; Garcia, J. A. M.; Kassab, L. R. P.

    2017-12-01

    Rare-earth-doped tellurite glass containing metallic nanoparticles can be exploited to manage the solar spectrum in order to increase solar cell efficiency. It is therefore possible to modify the incident solar spectrum profile to the spectrum that optimizes the solar cell recombination process by covering the solar cell with plasmonic luminescent downshifting layers. With this approach, the losses due to thermalization are minimized and the efficiency is increased. Due to the down-conversion process that couples the plasmon resonance of the metallic nanoparticles and the rare-earth electronic energy levels, it is possible to convert photons from the ultraviolet region to the visible and near-band-gap region of the semiconductor. It is demonstrated here that plasmon-assisted efficiency enhancements of 14.0% and 34.5% can be obtained for commercial Si and GaP solar cells, respectively, covered with Eu3+-doped TeO2-ZnO glass containing silver nanoparticles.

  15. p - n junction diodes fabricated from isolated electrospun fibers of (P(NDI2ODT2)) and an inorganic p-doped semiconductor

    Science.gov (United States)

    Rosado, Alexander; Pinto, Nicholas

    2013-03-01

    A simple method to fabricate, under ambient conditions and within seconds, p - n diodes using an individual electrospun poly{[N, N'-bis(2-octyldodecyl)-naphthalene-1,4,5,8-bis(dicarboximide)-2,6-diyl]-alt-5,5'-(2,2'-bithiophene)}-(P(NDI2ODT2)) fiber and a commercially available p-doped Si/SiO2 substrate is presented. Band bending at the fiber/Si+ interface leads to asymmetric I-V characteristic curves resembling that of a diode. The diode turn-on voltage was in the range 1V and was unaffected via UV light irradiation. The rectification ratio however could be tuned reversibly thereby making this device multifunctional. In addition to being a rectifier, the advantage of our design is the complete exposure of the rectifying junction to the surrounding environment. This has the advantage of making them attractive candidates in the potential fabrication of low power, sensitive and rapid response photo-sensors. NSF

  16. Spinomotive force induced by a transverse displacement current in a thin metal or doped-semiconductor sheet: Classical and quantum views.

    Science.gov (United States)

    Hu, Chia-Ren

    2004-03-01

    We present classical macroscopic, microscopic, and quantum mechanical arguments to show that in a metallic or electron/hole-doped semiconducting sheet thinner than the screening length, a displacement current applied normal to it can induce a spinomotive force along it. The magnitude is weak but clearly detectable. The classical arguments are purely electromagnetic. The quantum argument, based on the Dirac equation, shows that the predicted effect originates from the spin-orbit interaction, but not of the usual kind. That is, it relies on an external electric field, whereas the usual S-O interaction involves the electric field generated by the ions. Because the Dirac equation incorporatesThomas precession, which is due to relativistic kinematics, the quantum prediction is a factor of two smaller than the classical prediction. Replacing the displacement current by a charge current, and one obtains a new source for the spin-Hall effect. Classical macroscopic argument also predicts its existence, but the other two views are controversial.

  17. Enhancement of Cerenkov luminescence imaging by dual excitation of Er(3+,Yb(3+-doped rare-earth microparticles.

    Directory of Open Access Journals (Sweden)

    Xiaowei Ma

    Full Text Available Cerenkov luminescence imaging (CLI has been successfully utilized in various fields of preclinical studies; however, CLI is challenging due to its weak luminescent intensity and insufficient penetration capability. Here, we report the design and synthesis of a type of rare-earth microparticles (REMPs, which can be dually excited by Cerenkov luminescence (CL resulting from the decay of radionuclides to enhance CLI in terms of intensity and penetration.Yb(3+- and Er(3+- codoped hexagonal NaYF4 hollow microtubes were synthesized via a hydrothermal route. The phase, morphology, and emission spectrum were confirmed for these REMPs by power X-ray diffraction (XRD, scanning electron microscopy (SEM, and spectrophotometry, respectively. A commercial CCD camera equipped with a series of optical filters was employed to quantify the intensity and spectrum of CLI from radionuclides. The enhancement of penetration was investigated by imaging studies of nylon phantoms and nude mouse pseudotumor models.the REMPs could be dually excited by CL at the wavelengths of 520 and 980 nm, and the emission peaks overlaid at 660 nm. This strategy approximately doubled the overall detectable intensity of CLI and extended its maximum penetration in nylon phantoms from 5 to 15 mm. The penetration study in living animals yielded similar results.this study demonstrated that CL can dually excite REMPs and that the overlaid emissions in the range of 660 nm could significantly enhance the penetration and intensity of CL. The proposed enhanced CLI strategy may have promising applications in the future.

  18. Oxide semiconductors

    CERN Document Server

    Svensson, Bengt G; Jagadish, Chennupati

    2013-01-01

    Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. Originally widely known as the ""Willardson and Beer"" Series, it has succeeded in publishing numerous landmark volumes and chapters. The series publishes timely, highly relevant volumes intended for long-term impact and reflecting the truly interdisciplinary nature of the field. The volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in academia, scient

  19. Semiconductor statistics

    CERN Document Server

    Blakemore, J S

    1962-01-01

    Semiconductor Statistics presents statistics aimed at complementing existing books on the relationships between carrier densities and transport effects. The book is divided into two parts. Part I provides introductory material on the electron theory of solids, and then discusses carrier statistics for semiconductors in thermal equilibrium. Of course a solid cannot be in true thermodynamic equilibrium if any electrical current is passed; but when currents are reasonably small the distribution function is but little perturbed, and the carrier distribution for such a """"quasi-equilibrium"""" co

  20. Ion implantation for semiconductors

    International Nuclear Information System (INIS)

    Grey-Morgan, T.

    1995-01-01

    Full text: Over the past two decades, thousands of particle accelerators have been used to implant foreign atoms like boron, phosphorus and arsenic into silicon crystal wafers to produce special embedded layers for manufacturing semiconductor devices. Depending on the device required, the atomic species, the depth of implant and doping levels are the main parameters for the implantation process; the selection and parameter control is totally automated. The depth of the implant, usually less than 1 micron, is determined by the ion energy, which can be varied between 2 and 600 keV. The ion beam is extracted from a Freeman or Bernas type ion source and accelerated to 60 keV before mass analysis. For higher beam energies postacceleration is applied up to 200 keV and even higher energies can be achieved by mass selecting multiplycharged ions, but with a corresponding reduction in beam output. Depending on the device to be manufactured, doping levels can range from 10 10 to 10 15 atoms/cm 2 and are controlled by implanter beam currents in the range up to 30mA; continuous process monitoring ensures uniformity across the wafer of better than 1 % . As semiconductor devices get smaller, additional sophistication is required in the design of the implanter. The silicon wafers charge electrically during implantation and this charge must be dissipated continuously to reduce the electrical stress in the device and avoid destructive electrical breakdown. Electron flood guns produce low energy electrons (below 10 electronvolts) to neutralize positive charge buildup and implanter design must ensure minimum contamination by other isotopic species and ensure low internal sputter rates. The pace of technology in the semiconductor industry is such that implanters are being built now for 256 Megabit circuits but which are only likely to be widely available five years from now. Several specialist companies manufacture implanter systems, each costing around US$5 million, depending on the

  1. Interface doping of conjugated organic films by means of diffusion of atomic components from the surfaces of semiconductors and of metal oxides.

    Science.gov (United States)

    Komolov, A S; Akhremtchik, S N; Lazneva, E F

    2011-08-15

    The paper reports the results on the interface formation of 5-10 nm thick conjugated layers of Cu-phthalocyanine (CuPc) with a number of solid surfaces: polycrystalline Au, (SiO(2))n-Si, ZnO(0 0 0 1), Si(1 0 0), Ge(1 1 1), CdS(0 0 0 1) and GaAs(1 0 0). The results were obtained using Auger electron spectroscopy (AES) and low-energy target current electron spectroscopy (TCS). The organic overlayers were thermally deposited in situ in UHV onto substrate surfaces. The island-like organic deposits were excluded from the analysis so that only uniform organic deposits were considered. In the cases of polycrystalline Au, Si(1 0 0) and Ge(1 1 1) substrates the AES peaks of the substrate material attenuated down to the zero noise level upon the increase of the CuPc film thickness of 8-10 nm. The peaks corresponding to oxygen atoms in the case of SiO(2) substrate, and to atoms from the ZnO, GaAs and CdS substrates were clearly registered in the AES spectra of the 8-10 nm thick CuPc deposits. The relative concentration of the substrate atomic components diffused into the film was different from their relative concentration at the pure substrate surface. The concentration of the substrate dopant atoms in the CuPc film was estimated as one atom per one CuPc molecule. Using the target current electron spectroscopy, it was shown that the substrate atoms admixed in the CuPc film account for the appearance of a new peak in the density of unoccupied electronic states. Formation of intermediate TCS spectra until the CuPc deposit reaches 2-3 nm was observed in the cases of GaAs(1 0 0), ZnO(0 0 0 1), Ge(1 1 1) surfaces. The intermediate spectra show a less pronounced peak structure different from the one typical for the CuPc films. It was suggested that the intermediate layer was formed by the CuPc molecules fully or partially decomposed due to the interaction with the relatively reactive semiconductor surfaces. Copyright © 2010 Elsevier B.V. All rights reserved.

  2. Mechanisms of current flow in metal-semiconductor ohmic contacts

    International Nuclear Information System (INIS)

    Blank, T. V.; Gol'dberg, Yu. A.

    2007-01-01

    Published data on the properties of metal-semiconductor ohmic contacts and mechanisms of current flow in these contacts (thermionic emission, field emission, thermal-field emission, and also current flow through metal shunts) are reviewed. Theoretical dependences of the resistance of an ohmic contact on temperature and the charge-carrier concentration in a semiconductor were compared with experimental data on ohmic contacts to II-VI semiconductors (ZnSe, ZnO), III-V semiconductors (GaN, AlN, InN, GaAs, GaP, InP), Group IV semiconductors (SiC, diamond), and alloys of these semiconductors. In ohmic contacts based on lightly doped semiconductors, the main mechanism of current flow is thermionic emission with the metal-semiconductor potential barrier height equal to 0.1-0.2 eV. In ohmic contacts based on heavily doped semiconductors, the current flow is effected owing to the field emission, while the metal-semiconductor potential barrier height is equal to 0.3-0.5 eV. In alloyed In contacts to GaP and GaN, a mechanism of current flow that is not characteristic of Schottky diodes (current flow through metal shunts formed by deposition of metal atoms onto dislocations or other imperfections in semiconductors) is observed

  3. Semiconductor Detectors

    International Nuclear Information System (INIS)

    Cortina, E.

    2007-01-01

    Particle detectors based on semiconductor materials are among the few devices used for particle detection that are available to the public at large. In fact we are surrounded by them in our daily lives: they are used in photoelectric cells for opening doors, in digital photographic and video camera, and in bar code readers at supermarket cash registers. (Author)

  4. Thermochemistry of rare earth doped uranium oxides Ln{sub x}U{sub 1−x}O{sub 2−0.5x+y} (Ln = La, Y, Nd)

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Lei; Navrotsky, Alexandra, E-mail: anavrotsky@ucdavis.edu

    2015-10-15

    Lanthanum, yttrium, and neodymium doped uranium dioxide samples in the fluorite structure have been synthesized, characterized in terms of metal ratio and oxygen content, and their enthalpies of formation measured by high temperature oxide melt solution calorimetry. For oxides doped with 10–50 mol % rare earth (Ln) cations, the formation enthalpies from constituent oxides (LnO{sub 1.5}, UO{sub 2} and UO{sub 3} in a reaction not involving oxidation or reduction) become increasingly exothermic with increasing rare earth content, while showing no significant dependence on the varying uranium oxidation state. The oxidation enthalpy of Ln{sub x}U{sub 1−x}O{sub 2−0.5x+y} is similar to that of UO{sub 2} to UO{sub 3} for all three rare earth doped systems. Though this may suggest that the oxidized uranium in these systems is energetically similar to that in the hexavalent state, thermochemical data alone can not constrain whether the uranium is present as U{sup 5+}, U{sup 6+}, or a mixture of oxidation states. The formation enthalpies from elements calculated from the calorimetric data are generally consistent with those from free energy measurements. - Highlights: • We synthesize, characterize Ln{sub x}U{sub 1−x}O{sub 2−0.5x+y} solid solutions (Ln = La, Y, Nd). • Formation enthalpies become more exothermic with increasing rare earth content. • Oxidation enthalpy of Ln{sub x}U{sub 1−x}O{sub 2−0.5x+y} is similar to that of UO{sub 2} to UO{sub 3}. • Direct calorimetric measurements are in good agreement with free energy data.

  5. Effect of rare earth doping on optical and spectroscopic characteristics of BaZrO3:Eu3+,Tb3+ perovskites

    Science.gov (United States)

    Katyayan, Shambhavi; Agrawal, Sadhana

    2018-06-01

    This paper reports structural investigations of rare earth doped BaZrO3 phosphors synthesized by Solid state reaction technique with varying concentrations of Eu3+ and Tb3+ from 0 mol% to 2 mol%. The synthesized phosphors show enhanced variable emissions in the visible region corresponding to different hypersensitive electronic transitions of Eu3+ and Tb3+ ions. With cubic structure confirmed in XRD analysis, the FESEM images show uniform grain connectivity and homogeneity of prepared samples. The TEM micrographs of the synthesized phosphors show agglomerated irregular structures. The synthesized phosphors were also subjected to FTIR, Raman, EDXS analysis along with studies of thermoluminescent and photoluminescent characteristics. On subjecting to 229 nm (UV) excitation, the phosphors show enhanced PL emissions corresponding to 571 nm (5D0-7F0), 591 nm (5D0-7F1), 615 nm (5D0-7F2) and 678 nm (5D0-7F4) hypersensitive transitions of Eu3+ ions and emission peaks at 489 nm (5D4-7F6), 539 nm (5D4-7F5), 589 nm (5D4-7F4) and 632 nm (5D4-7F3) accounting for electronic transitions of Tb3+ ions respectively. The computed average PL lifetime is 14.014 s. In the TL analysis, the second order of kinetics with the activation energy varying from 5.0 × 10‑1 eV to 6.6 × 10‑1 eV is reported. The maximum TL lifetime is estimated as 19.4985 min in the TL lifetime analysis.

  6. Ultrafast THz Saturable Absorption in Semiconductors

    DEFF Research Database (Denmark)

    Turchinovich, Dmitry; Hoffmann, Matthias C.

    2011-01-01

    We demonstrate THz saturable absorption in n-doped semiconductors GaAs, GaP, and Ge in a nonlinear THz time-domain spectroscopy experiment. Saturable absorption is caused by sample conductivity modulation due to electron heating and satellite valley scattering in the field of a strong THz pulse....

  7. General specifications for silicon semiconductors for use in radiation dosimetry

    International Nuclear Information System (INIS)

    Rikner, G.; Grusell, E.

    1987-01-01

    Silicon semiconductor detectors used in radiation dosimetry have different properties, just as e.g. ionisation chambers, affecting the interaction of radiation with matter in the vicinity of the sensitive volume of the detector, e.g. wall materials, and also the collection of the charges liberated in the detector by the radiation. The charge collection depends on impurities, lattice imperfections and other properties of the semiconductor crystal. In this paper the relevant parameters of a silicon semiconductor detector intended for dosimetry are reviewed. The influence of doping material, doping level, various effects of radiation damage, mechanical construction, detector size, statistical noise and connection to the electrometer are discussed. (author)

  8. Rare-earth-ion-doped ultra-narrow-linewidth lasers on a silicon chip and applications to intra-laser-cavity optical sensing

    NARCIS (Netherlands)

    Bernhardi, Edward; de Ridder, R.M.; Worhoff, Kerstin; Pollnau, Markus

    We report on diode-pumped distributed-feedback (DFB) and distributed-Bragg-reflector (DBR) channel waveguide lasers in Er-doped and Yb-doped Al2O3 on standard thermally oxidized silicon substrates. Uniform surface-relief Bragg gratings were patterned by laser-interference lithography and etched into

  9. Semiconductor sensors

    International Nuclear Information System (INIS)

    Hartmann, Frank

    2011-01-01

    Semiconductor sensors have been around since the 1950s and today, every high energy physics experiment has one in its repertoire. In Lepton as well as Hadron colliders, silicon vertex and tracking detectors led to the most amazing physics and will continue doing so in the future. This contribution tries to depict the history of these devices exemplarily without being able to honor all important developments and installations. The current understanding of radiation damage mechanisms and recent R and D topics demonstrating the future challenges and possible technical solutions for the SLHC detectors are presented. Consequently semiconductor sensor candidates for an LHC upgrade and a future linear collider are also briefly introduced. The work presented here is a collage of the work of many individual silicon experts spread over several collaborations across the world.

  10. Semiconductor Optics

    CERN Document Server

    Klingshirn, Claus F

    2012-01-01

    This updated and enlarged new edition of Semiconductor Optics provides an introduction to and an overview of semiconductor optics from the IR through the visible to the UV, including linear and nonlinear optical properties, dynamics, magneto and electrooptics, high-excitation effects and laser processes, some applications, experimental techniques and group theory. The mathematics is kept as elementary as possible, sufficient for an intuitive understanding of the experimental results and techniques treated. The subjects covered extend from physics to materials science and optoelectronics. Significantly updated chapters add coverage of current topics such as electron hole plasma, Bose condensation of excitons and meta materials. Over 120 problems, chapter introductions and a detailed index make it the key textbook for graduate students in physics. The mathematics is kept as elementary as possible, sufficient for an intuitive understanding of the experimental results and techniques treated. The subjects covered ...

  11. Mg2BIV: Narrow Bandgap Thermoelectric Semiconductors

    Science.gov (United States)

    Kim, Il-Ho

    2018-05-01

    Thermoelectric materials can convert thermal energy directly into electric energy and vice versa. The electricity generation from waste heat via thermoelectric devices can be considered as a new energy source. For instance, automotive exhaust gas and all industrial processes generate an enormous amount of waste heat that can be converted to electricity by using thermoelectric devices. Magnesium compound Mg2BIV (BIV = Si, Ge or Sn) has a favorable combination of physical and chemical properties and can be a good base for the development of new efficient thermoelectrics. Because they possess similar properties to those of group BIV elemental semiconductors, they have been recognized as good candidates for thermoelectric applications. Mg2Si, Mg2Ge and Mg2Sn with an antifluorite structure are narrow bandgap semiconductors with indirect band gaps of 0.77 eV, 0.74 eV, and 0.35 eV, respectively. Mg2BIV has been recognized as a promising material for thermoelectric energy conversion at temperatures ranging from 500 K to 800 K. Compared to other thermoelectric materials operating in the similar temperature range, such as PbTe and filled skutterudites, the important aspects of Mg2BIV are non-toxic and earth-abundant elements. Based on classical thermoelectric theory, the material factor β ( m* / m e)3/2μκ L -1 can be utilized as the criterion for thermoelectric material selection, where m* is the density-of-states effective mass, me is the mass of an electron, μ is the carrier mobility, and κL is the lattice thermal conductivity. The β for magnesium silicides is 14, which is very high compared to 0.8 for iron silicides, 1.4 for manganese silicides, and 2.6 for silicon-germanium alloys. In this paper, basic phenomena of thermoelectricity and transport parameters for thermoelectric materials were briefly introduced, and thermoelectric properties of Mg2BIV synthesized by using a solid-state reaction were reviewed. In addition, various Mg2BIV compounds were discussed

  12. Semiconductor annealing

    International Nuclear Information System (INIS)

    Young, J.M.; Scovell, P.D.

    1982-01-01

    A process for annealing crystal damage in ion implanted semiconductor devices in which the device is rapidly heated to a temperature between 450 and 900 0 C and allowed to cool. It has been found that such heating of the device to these relatively low temperatures results in rapid annealing. In one application the device may be heated on a graphite element mounted between electrodes in an inert atmosphere in a chamber. (author)

  13. First-principles investigations on structural, elastic, dynamical, and thermal properties of earth-abundant nitride semiconductor CaZn{sub 2}N{sub 2} under pressure

    Energy Technology Data Exchange (ETDEWEB)

    Zhao, Ying-Qin; Liu, Lei; Cheng, Yan [Sichuan Univ. (China). College of Physical Science and Technology; Hu, Cui E. [Chongqing Normal Univ. (China). College of Physics and Electronic Engineering; Cai, Ling-Cang [CAEP, Mianyang (China). National Key Laboratory for Shock Wave and Detonation Physics Research

    2017-04-01

    We presented a detailed first-principal calculation to study the structural, elastic, dynamical, and thermal properties of a new synthetic ternary zinc nitride semiconductors CaZn{sub 2}N{sub 2} using the generalised gradient approximation (GGA) method. The obtained lattice parameters of CaZn{sub 2}N{sub 2} at 0 K and 0 GPa are in good agreement with the experimental data and other theoretical findings. The pressure dependences of the elastic constants C{sub ij} together with other derived mechanical properties of CaZn{sub 2}N{sub 2} compound have also been systematically investigated. The results reveal that CaZn{sub 2}N{sub 2} is mechanically stable up to 20 GPa. The calculated the phonon curves and phonon density of states under different pressures indicate that the CaZn{sub 2}N{sub 2} compound maintains its dynamical stability up to 20 GPa. An analysis in terms of the irreducible representations of group theory obtained the optical vibration modes of this system, and we obtained the frequencies of the optical vibrational modes at Γ points together with the atoms that contributed to these vibrations of CaZn{sub 2}N{sub 2}. Meanwhile, the pressure dependencies of the frequencies Raman-active and IR-active modes at 0-20 GPa have been studied. The quasi-harmonic approximation (QHA) was applied to calculate the thermal properties of CaZn{sub 2}N{sub 2} as functions of pressures and temperatures such as the heat capacity, thermal expansions, the entropy, and Grueneisen parameter γ.

  14. A semiconductor laser device

    Energy Technology Data Exchange (ETDEWEB)

    Takaro, K.; Naoki, T.; Satosi, K.; Yasutosi, K.

    1984-03-17

    A device is proposed which makes it possible to obtain single vertical mode emission in the absence of noise. Noise suppression is achieved by a method which determines the relationship between the donor densities in the second and third layers of an n type semiconductor laser, and the total output optical emission of layers with respect to the emission from the entire laser. The device consists of a photoresist film with a window applied to a 100 GaAs n type conductivity substrate using a standard method. Chemical etching through this window in the substrate is used to generate a slot approximately 1 micrometer in size. After the photoresist film is removed, the following layers are deposited from the liquid phase onto the substrate in the sequence indicated: a telurium doped protective layer of n type AlxGa(1-x) As; 2) an undoped active p type AlyGa(1-6) As layer and a tellurium doped upper protective n type conductivity GaAs layer.

  15. Ways of providing radiation resistance of magnetic field semiconductor sensors

    CERN Document Server

    Bolshakova, I A; Holyaka, R; Matkovskii, A; Moroz, A

    2001-01-01

    Hall magnetic field sensors resistant to hard ionizing irradiation are being developed for operation under the radiation conditions of space and in charged particle accelerators. Radiation resistance of the sensors is first determined by the properties of semiconductor materials of sensitive elements; we have used microcrystals and thin layers of III-V semiconductors. Applying complex doping by rare-earth elements and isovalent impurities in certain proportions, we have obtained magnetic field sensors resistant to irradiation by fast neutrons and gamma-quanta. Tests of their radiation resistance were carried out at IBR-2 at the Joint Institute for Nuclear Research (Dubna). When exposed to neutrons with E=0.1-13 MeV and intensity of 10 sup 1 sup 0 n cm sup - sup 2 s sup - sup 1 , the main parameter of the sensors - their sensitivity to magnetic fields - changes by no more than 0.1% up to fluences of 10 sup 1 sup 4 n cm sup - sup 2. Further improvement of radiation resistance of sensor materials is expected by ...

  16. Thermal neutron imaging with rare-earth-ion-doped LiCaAlF6 scintillators and a sealed 252Cf source

    International Nuclear Information System (INIS)

    Kawaguchi, Noriaki; Yanagida, Takayuki; Fujimoto, Yutaka; Yokota, Yuui; Kamada, Kei; Fukuda, Kentaro; Suyama, Toshihisa; Watanabe, Kenichi; Yamazaki, Atsushi; Chani, Valery; Yoshikawa, Akira

    2011-01-01

    Thermal neutron imaging with Ce-doped LiCaAlF 6 crystals has been performed. The prototype of the neutron imager using a Ce-doped LiCaAlF 6 scintillating crystal and a position sensitive photomultiplier tube (PSPMT) which had 64 multi-channel anode was developed. The Ce-doped LiCaAlF 6 single crystal was grown by the Czochralski method. A plate with dimensions of a diameter of 50x2 mm 2 was cut from the grown crystal, polished, and optically coupled to PSPMT by silicone grease. The 252 Cf source ( 6 .

  17. Ionic exchange of Hf donor impurities in the wide-gap semiconductor Tm{sub 2}O{sub 3}

    Energy Technology Data Exchange (ETDEWEB)

    Munoz, E.L.; Darriba, G.N. [Departamento de Fisica-IFLP (CONICET-UNLP), Facultad de Ciencias Exactas, Universidad Nacional de La Plata, C.C. 67, 1900 La Plata (Argentina); Bibiloni, A.G. [Departamento de Fisica, Facultad de Ciencias Exactas, Universidad Nacional de La Plata, C.C. 67, 1900 La Plata (Argentina); Errico, L.A. [Departamento de Fisica-IFLP (CONICET-UNLP), Facultad de Ciencias Exactas, Universidad Nacional de La Plata, C.C. 67, 1900 La Plata (Argentina); Universidad Nacional del Noroeste Bonaerense (UNNOBA), Monteagudo 2772, 2700 Pergamino, Buenos Aires (Argentina); Renteria, M., E-mail: renteria@fisica.unlp.edu.a [Departamento de Fisica-IFLP (CONICET-UNLP), Facultad de Ciencias Exactas, Universidad Nacional de La Plata, C.C. 67, 1900 La Plata (Argentina)

    2010-04-16

    The ionic exchange of Hf donor impurities in substitutional cationic sites of the cubic (bixbyite) phase of the wide-gap semiconductor Tm{sub 2}O{sub 3} was studied. The doping process was performed by ball-milling-assisted solid-state reaction of Tm{sub 2}O{sub 3} and neutron-activated m-HfO{sub 2}. {sup 181}Ta atoms, obtained by the {beta}-decay of the {sup 181}Hf-isotope, were used as probes in time-differential perturbed-angular-correlation (TDPAC) experiments carried out after each step of the doping process. The measured hyperfine interactions at {sup 181}Ta sites enabled the electric-field gradient (EFG) characterization at representative Hf impurity sites of each step of the process. The efficiency and substitutional character of the exchange process is discussed and elucidated in the framework of an empirical EFG systematic established in isostructural rare-earth bixbyite sesquioxides.

  18. Luminescence and photo-thermally stimulated defects creation processes in PbWO{sub 4} crystals doped with trivalent rare-earth ions

    Energy Technology Data Exchange (ETDEWEB)

    Fabeni, P. [Institute of Applied Physics “N.Carrara” (IFAC) of CNR, Via Madonna del Piano 10, 50019 Sesto Fiorentino (Firenze) (Italy); Krasnikov, A.; Kärner, T. [Institute of Physics, University of Tartu, Riia 142, 51014 Tartu (Estonia); Laguta, V.V.; Nikl, M. [Institute of Physics AS CR, Cukrovarnicka 10, 16253 Prague (Czech Republic); Pazzi, G.P. [Institute of Applied Physics “N.Carrara” (IFAC) of CNR, Via Madonna del Piano 10, 50019 Sesto Fiorentino (Firenze) (Italy); Zazubovich, S., E-mail: svet@fi.tartu.ee [Institute of Physics, University of Tartu, Riia 142, 51014 Tartu (Estonia)

    2013-04-15

    In PbWO{sub 4} crystals, doped with various trivalent rare-earth A{sup 3+} ions (A{sup 3+}: La{sup 3+}, Lu{sup 3+}, Y{sup 3+}, Ce{sup 3+}, Gd{sup 3+}), electron (WO{sub 4}){sup 3−} and {(WO_4)"3"−–A"3"+} centers can be created under UV irradiation not only in the host absorption region but also in the energy range around 3.85 eV (Böhm et al., 1999; Krasnikov et al., 2010). Under excitation in the same energy range, the UV emission peak at 3.05–3.20 eV is observed. In the present work, the origin of this emission is investigated in detail by low-temperature time-resolved luminescence methods. Photo-thermally stimulated creation of (WO{sub 4}){sup 3−} and {(WO_4)"3"−–A"3"+} centers is studied also in PbWO{sub 4}:Mo,A{sup 3+} crystals. Various processes, which could explain both the appearance of the UV emission and the creation of the {(WO_4)"3"−–A"3"+}-type centers under irradiation of PbWO{sub 4}: A{sup 3+} crystals in the 3.85±0.35 eV energy range, are discussed. The radiative and non-radiative decay of the excitons localized near A{sup 3+} ions is considered as the most probable mechanism to explain the observed features. -- Highlights: ► UV emission of PbWO{sub 4}: A{sup 3+} (A{sup 3+}: La{sup 3+}, Lu{sup 3+}, Y{sup 3+}, Ce{sup 3+}, and Gd{sup 3+}) crystals is studied. ► The emission is ascribed to the radiative decay of excitons localized near A{sup 3+} ions. ► The excitons are created at 3.85 eV excitation by a two-step process. ► Non-radiative decay of the excitons leads to the creation of (WO{sub 4}){sup 3−}–A{sup 3+} centers.

  19. Semiconductor plasmonic crystals: active control of THz extinction

    International Nuclear Information System (INIS)

    Schaafsma, M C; Rivas, J Gómez

    2013-01-01

    We investigate theoretically the enhanced THz extinction by periodic arrays of semiconductor particles. Scattering particles of doped semiconductors can sustain localized surface plasmon polaritons, which can be diffractively coupled giving rise to surface lattice resonances. These resonances are characterized by a large extinction and narrow bandwidth, which can be tuned by controlling the charge carrier density in the semiconductor. The underlaying mechanism leading to this tuneability is explained using the coupled dipole approximation and considering GaAs as the semiconductor. The enhanced THz extinction in arrays of GaAs particles could be tuned in a wide range by optical pumping of charge carriers. (invited article)

  20. Use of radioactive tracers in the semiconductor industry

    International Nuclear Information System (INIS)

    Akerman, Karol

    1975-01-01

    Manufacture of the semiconductor materials comprises production and purification of the raw materials (GeC14 or SiHC13), purification of the elemental semiconductors by metallurgical methods (including zone melting), production and doping of single crystals, dividing the crystals into slices of suitable size, formation of p-n junctions and fabrication of the finished semiconductor devices. In the sequence of operations, the behavior of very small quantities of an element must be monitored, and radioactive tracers are often used to solve these problems. Examples are given of the use of radioactive tracers in the semiconductor industry

  1. Nanostructured rare earth doped Nb{sub 2}O{sub 5}: Structural, optical properties and their correlation with photonic applications

    Energy Technology Data Exchange (ETDEWEB)

    Pereira, Rafael Ramiro; Aquino, Felipe Thomaz [Departamento de Química, Faculdade de Filosofia, Ciências e Letras de Ribeirão Preto, Universidade de São Paulo, Av. Bandeirantes 3900, Ribeirão Preto, SP CEP 14040-901 (Brazil); Ferrier, Alban [PSL Research University, Chimie ParisTech-CNRS, Institut de Recherche de Chimie Paris, 75005 Paris (France); Sorbonne Universités, UPMC Univ Paris 06, 75005 Paris (France); Goldner, Philippe [PSL Research University, Chimie ParisTech-CNRS, Institut de Recherche de Chimie Paris, 75005 Paris (France); Gonçalves, Rogéria R., E-mail: rrgoncalves@ffclrp.usp.br [Departamento de Química, Faculdade de Filosofia, Ciências e Letras de Ribeirão Preto, Universidade de São Paulo, Av. Bandeirantes 3900, Ribeirão Preto, SP CEP 14040-901 (Brazil)

    2016-02-15

    In the present work, we report on a systematic study on structural and spectroscopic properties Eu{sup 3+} and Er{sup 3+}-doped Nb{sub 2}O{sub 5} prepared by sol–gel method. The Eu{sup 3+} ions were used as structural probe to determine the symmetry sites occupied by lanthanide ions. The Eu{sup 3+}-doped Nb{sub 2}O{sub 5} nanocrystalline powders were annealed at different temperatures to verify how the different Nb{sub 2}O{sub 5} crystalline phases affect the structure and the luminescence properties. Er{sup 3+}-doped Nb{sub 2}O{sub 5} was prepared showing an intense NIR luminescence, and, visible luminescence on the green and red, deriving from upconversion process. The synthetized materials can find widespread applicability in photonics as red luminophor for white LED (with tricolor), optical amplifiers and upconverter materials. - Highlights: • Vis and NIR emission from nanostructured lanthanide doped Nb{sub 2}O{sub 5}. • Eu{sup 3+}-doped Nb{sub 2}O{sub 5} as Red luminophor. • Multicolor tunability of intense upconversion emission from lanthanide doped Nb{sub 2}O{sub 5}. • Potential application as biological markers. • Broad band NIR emission.

  2. Semiconductor annealing

    International Nuclear Information System (INIS)

    Young, J.M.; Scovell, P.D.

    1981-01-01

    A process for annealing crystal damage in ion implanted semiconductor devices is described in which the device is rapidly heated to a temperature between 450 and 600 0 C and allowed to cool. It has been found that such heating of the device to these relatively low temperatures results in rapid annealing. In one application the device may be heated on a graphite element mounted between electrodes in an inert atmosphere in a chamber. The process may be enhanced by the application of optical radiation from a Xenon lamp. (author)

  3. Ferromagnetism in doped or undoped spintronics nanomaterials

    Science.gov (United States)

    Qiang, You

    2010-10-01

    Much interest has been sparked by the discovery of ferromagnetism in a range of oxide doped and undoped semiconductors. The development of ferromagnetic oxide semiconductor materials with giant magnetoresistance (GMR) offers many advantages in spintronics devices for future miniaturization of computers. Among them, TM-doped ZnO is an extensively studied n-type wide-band-gap (3.36 eV) semiconductor with a tremendous interest as future mini-computer, blue light emitting, and solar cells. In this talk, Co-doped ZnO and Co-doped Cu2O semiconductor nanoclusters are successfully synthesized by a third generation sputtering-gas-aggregation cluster technique. The Co-doped nanoclusters are ferromagnetic with Curie temperature above room temperature. Both of Co-doped nanoclusters show positive magnetoresistance (PMR) at low temperature, but the amplitude of the PMRs shows an anomalous difference. For similar Co doping concentration at 5 K, PMR is greater than 800% for Co-doped ZnO but only 5% for Co-doped Cu2O nanoclusters. Giant PMR in Co-doped ZnO which is attributed to large Zeeman splitting effect has a linear dependence on applied magnetic field with very high sensitivity, which makes it convenient for the future spintronics applications. The small PMR in Co-doped Cu2O is related to its vanishing density of states at Fermi level. Undoped Zn/ZnO core-shell nanoparticle gives high ferromagnetic properties above room temperature due to the defect induced magnetization at the interface.

  4. Physics with isotopically controlled semiconductors

    International Nuclear Information System (INIS)

    Haller, E.E.

    1994-08-01

    Control of the isotopic composition of semiconductors offers a wide range of new scientific opportunities. In this paper a number of recent results obtained with isotopically pure as well as deliberately mixed diamond and Ge bulk single crystals and Ge isotope superlattices will be reviewed. Isotopic composition affects several properties such as phonon energies, bandstructure and lattice constant in subtle but theoretically well understood ways. Large effects are observed for thermal conductivity, local vibrational modes of impurities and after neutron transmutation doping (NTD). Several experiments which could profit greatly from isotope control are proposed

  5. Theoretical investigation of the more suitable rare earth to achieve high gain in waveguide based on silica containing silicon nanograins doped with either Nd³+ or Er³+ ions.

    Science.gov (United States)

    Fafin, Alexandre; Cardin, Julien; Dufour, Christian; Gourbilleau, Fabrice

    2014-05-19

    We present a comparative study of the gain achievement in a waveguide whose active layer is constituted by a silica matrix containing silicon nanograins acting as sensitizer of either neodymium ions (Nd3+) or erbium ions (Er3+). By means of an auxiliary differential equation and finite difference time domain (ADE-FDTD) approach that we developed, we investigate the steady states regime of both rare earths ions and silicon nanograins levels populations as well as the electromagnetic field for different pumping powers ranging from 1 to 104 mW/mm2. Moreover, the achievable gain has been estimated in this pumping range. The Nd3+ doped waveguide shows a higher gross gain per unit length at 1064 nm (up to 30 dB/cm) than the one with Er3+ doped active layer at 1532 nm (up to 2 dB/cm). Taking into account the experimental background losses we demonstrate that a significant positive net gain can only be achieved with the Nd3+ doped waveguide.

  6. Magnetic semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Bihler, Christoph

    2009-04-15

    In this thesis we investigated in detail the properties of Ga{sub 1-x}Mn{sub x}As, Ga{sub 1-x}Mn{sub x}P, and Ga{sub 1-x}Mn{sub x}N dilute magnetic semiconductor thin films with a focus on the magnetic anisotropy and the changes of their properties upon hydrogenation. We applied two complementary spectroscopic techniques to address the position of H in magnetic semiconductors: (i) Electron paramagnetic resonance, which provides direct information on the symmetry of the crystal field of the Mn{sup 2+} atoms and (ii) x-ray absorption fine structure analysis which allows to probe the local crystallographic neighborhood of the absorbing Mn atom via analysing the fine structure at the Mn K absorption edge. Finally, we discussed the obstacles that have to be overcome to achieve Curie temperatures above the current maximum in Ga{sub 1-x}Mn{sub x}As of 185 K. Here, we outlined in detail the generic problem of the formation of precipitates at the example of Ge:MN. (orig.)

  7. Doping effect in Si nanocrystals

    Science.gov (United States)

    Li, Dongke; Xu, Jun; Zhang, Pei; Jiang, Yicheng; Chen, Kunji

    2018-06-01

    Intentional doping in semiconductors is a fundamental issue since it can control the conduction type and ability as well as modify the optical and electronic properties. To realize effective doping is the basis for developing semiconductor devices. However, by reducing the size of a semiconductor, like Si, to the nanometer scale, the doping effects become complicated due to the coupling between the quantum confinement effect and the surfaces and/or interfaces effect. In particular, by introducing phosphorus or boron impurities as dopants into material containing Si nanocrystals with a dot size of less than 10 nm, it exhibits different behaviors and influences on the physical properties from its bulk counterpart. Understanding the doping effects in Si nanocrystals is currently a challenge in order to further improve the performance of the next generation of nano-electronic and photonic devices. In this review, we present an overview of the latest theoretical studies and experimental results on dopant distributions and their effects on the electronic and optical properties of Si nanocrystals. In particular, the advanced characterization techniques on dopant distribution, the carrier transport process as well as the linear and nonlinear optical properties of doped Si nanocrystals, are systematically summarized.

  8. Carrier concentration induced ferromagnetism in semiconductors

    International Nuclear Information System (INIS)

    Story, T.

    2007-01-01

    In semiconductor spintronics the key materials issue concerns ferromagnetic semiconductors that would, in particular, permit an integration (in a single multilayer heterostructure) of standard electronic functions of semiconductors with magnetic memory function. Although classical semiconductor materials, such as Si or GaAs, are nonmagnetic, upon substitutional incorporation of magnetic ions (typically of a few atomic percents of Mn 2+ ions) and very heavy doping with conducting carriers (at the level of 10 20 - 10 21 cm -3 ) a ferromagnetic transition can be induced in such diluted magnetic semiconductors (also known as semimagnetic semiconductors). In the lecture the spectacular experimental observations of carrier concentration induced ferromagnetism will be discussed for three model semiconductor crystals. p - Ga 1-x Mn x As currently the most actively studied and most perspective ferromagnetic semiconductor of III-V group, in which ferromagnetism appears due to Mn ions providing both local magnetic moments and acting as acceptor centers. p - Sn 1-x Mn x Te and p - Ge 1-x Mn x Te classical diluted magnetic semiconductors of IV-VI group, in which paramagnet-ferromagnet and ferromagnet-spin glass transitions are found for very high hole concentration. n - Eu 1-x Gd x Te mixed magnetic crystals, in which the substitution of Gd 3+ ions for Eu 2+ ions creates very high electron concentration and transforms antiferromagnetic EuTe (insulating compound) into ferromagnetic n-type semiconductor alloy. For each of these materials systems the key physical features will be discussed concerning: local magnetic moments formation, magnetic phase diagram as a function of magnetic ions and carrier concentration as well as Curie temperature and magnetic anisotropy engineering. Various theoretical models proposed to explain the effect of carrier concentration induced ferromagnetism in semiconductors will be briefly discussed involving mean field approaches based on Zener and RKKY

  9. Semiconductor Laser Measurements Laboratory

    Data.gov (United States)

    Federal Laboratory Consortium — The Semiconductor Laser Measurements Laboratory is equipped to investigate and characterize the lasing properties of semiconductor diode lasers. Lasing features such...

  10. Acoustoelectric interaction in degenerately doped piezoelectric semiconductors

    DEFF Research Database (Denmark)

    Mosekilde, Erik

    1972-01-01

    The acoustoelectric gain constant is calculated quantum mechanically for arbitrary degeneracy of the electron gas. The requirements of energy and momentum conservation in individual electron-phonon interactions result in a rather sharp reduction of the gain factor when the acoustic wave number ex...

  11. Strain-tuning of the optical properties of semiconductor nanomaterials by integration onto piezoelectric actuators

    Science.gov (United States)

    Martín-Sánchez, Javier; Trotta, Rinaldo; Mariscal, Antonio; Serna, Rosalía; Piredda, Giovanni; Stroj, Sandra; Edlinger, Johannes; Schimpf, Christian; Aberl, Johannes; Lettner, Thomas; Wildmann, Johannes; Huang, Huiying; Yuan, Xueyong; Ziss, Dorian; Stangl, Julian; Rastelli, Armando

    2018-01-01

    The tailoring of the physical properties of semiconductor nanomaterials by strain has been gaining increasing attention over the last years for a wide range of applications such as electronics, optoelectronics and photonics. The ability to introduce deliberate strain fields with controlled magnitude and in a reversible manner is essential for fundamental studies of novel materials and may lead to the realization of advanced multi-functional devices. A prominent approach consists in the integration of active nanomaterials, in thin epitaxial films or embedded within carrier nanomembranes, onto Pb(Mg1/3Nb2/3)O3-PbTiO3-based piezoelectric actuators, which convert electrical signals into mechanical deformation (strain). In this review, we mainly focus on recent advances in strain-tunable properties of self-assembled InAs quantum dots (QDs) embedded in semiconductor nanomembranes and photonic structures. Additionally, recent works on other nanomaterials like rare-earth and metal-ion doped thin films, graphene and MoS2 or WSe2 semiconductor two-dimensional materials are also reviewed. For the sake of completeness, a comprehensive comparison between different procedures employed throughout the literature to fabricate such hybrid piezoelectric-semiconductor devices is presented. It is shown that unprocessed piezoelectric substrates (monolithic actuators) allow to obtain a certain degree of control over the nanomaterials’ emission properties such as their emission energy, fine-structure-splitting in self-assembled InAs QDs and semiconductor 2D materials, upconversion phenomena in BaTiO3 thin films or piezotronic effects in ZnS:Mn films and InAs QDs. Very recently, a novel class of micro-machined piezoelectric actuators have been demonstrated for a full control of in-plane stress fields in nanomembranes, which enables producing energy-tunable sources of polarization-entangled photons in arbitrary QDs. Future research directions and prospects are discussed.

  12. Electronic structure and magnetic properties of Sc doped EuO thin films

    Energy Technology Data Exchange (ETDEWEB)

    Reisner, Andreas; Altendorf, Simone; Chang, Chun-Fu; Tjeng, Liu Hao [Max-Planck-Institute for Chemical Physics of Solids, Noethnitzer Str.40, 01187 Dresden (Germany); Lin, Hong-Ji; Chen, Chien-Te [National Synchrotron Radiation Research Center, Hsin-Ann Road, 30076 Hsinchu, Taiwan (China)

    2013-07-01

    Europium monoxide is a ferromagnetic semiconductor with a Curie temperature T{sub C} of 69 K. Upon doping the material can show an increase of the Curie temperature, a metal-to-insulator transition and a high spin polarization of the charge carriers. Applying pressure can also enhance T{sub C}. Mostly other trivalent rare earth metals are used as dopant. Here we set out to explore the possibility of using transition metals as dopants. As a start we focus on the non magnetic Sc ions. We are able to achieve excellent crystalline growth of Sc-doped EuO thin films on YSZ (001) substrates using molecular beam epitaxy. We report our results on the crystal structure as characterized by RHEED and LEED, the electronic structure as determined by XPS and ARPES, and on the magnetic properties as measured by SQUID.

  13. Doping of wide-bandgap titanium-dioxide nanotubes: optical, electronic and magnetic properties

    Science.gov (United States)

    Alivov, Yahya; Singh, Vivek; Ding, Yuchen; Cerkovnik, Logan Jerome; Nagpal, Prashant

    2014-08-01

    Doping semiconductors is an important step for their technological application. While doping bulk semiconductors can be easily achieved, incorporating dopants in semiconductor nanostructures has proven difficult. Here, we report a facile synthesis method for doping titanium-dioxide (TiO2) nanotubes that was enabled by a new electrochemical cell design. A variety of optical, electronic and magnetic dopants were incorporated into the hollow nanotubes, and from detailed studies it is shown that the doping level can be easily tuned from low to heavily-doped semiconductors. Using desired dopants - electronic (p- or n-doped), optical (ultraviolet bandgap to infrared absorption in co-doped nanotubes), and magnetic (from paramagnetic to ferromagnetic) properties can be tailored, and these technologically important nanotubes can be useful for a variety of applications in photovoltaics, display technologies, photocatalysis, and spintronic applications.Doping semiconductors is an important step for their technological application. While doping bulk semiconductors can be easily achieved, incorporating dopants in semiconductor nanostructures has proven difficult. Here, we report a facile synthesis method for doping titanium-dioxide (TiO2) nanotubes that was enabled by a new electrochemical cell design. A variety of optical, electronic and magnetic dopants were incorporated into the hollow nanotubes, and from detailed studies it is shown that the doping level can be easily tuned from low to heavily-doped semiconductors. Using desired dopants - electronic (p- or n-doped), optical (ultraviolet bandgap to infrared absorption in co-doped nanotubes), and magnetic (from paramagnetic to ferromagnetic) properties can be tailored, and these technologically important nanotubes can be useful for a variety of applications in photovoltaics, display technologies, photocatalysis, and spintronic applications. Electronic supplementary information (ESI) available: See DOI: 10.1039/c4nr02417f

  14. Optically induced Hall effect in semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Idrish Miah, M; Gray, E Mac A, E-mail: m.miah@griffith.edu.a [Nanoscale Science and Technology Centre, Griffith University, Nathan, Brisbane, QLD 4111 (Australia)

    2009-03-01

    We describe an experiment which investigates the effect of a longitudinal electric field on the spin-polarized carriers generated by a circularly polarized light in semiconductors. Our experiment observes the effect as a Hall voltage resulting from nonequilibrium magnetization induced by the spin-carrier electrons accumulating at the transverse boundaries of the sample as a result of asymmetries in scattering for spin-up and spin-down electrons in the presence of spin-orbit interaction. It is found that the effect depends on the longitudinal electric field and doping density as well as on temperature. The results are presented by discussing the dominant spin relaxation mechanisms in semiconductors.

  15. Self-propagating high temperature synthesis, structural morphology and magnetic interactions in rare earth Ho{sup 3+} doped CoFe{sub 2}O{sub 4} nanoparticles

    Energy Technology Data Exchange (ETDEWEB)

    Lohar, K.S. [Materials Research Laboratory, Srikrishna Mahavidyalaya Gunjoti, Omerga, Osmanabad 413 613, MS (India); Pachpinde, A.M.; Langade, M.M. [Department of Chemistry, Jawahar Art Science and Commerce College Andur, Osmanabad, MS (India); Kadam, R.H. [Materials Research Laboratory, Srikrishna Mahavidyalaya Gunjoti, Omerga, Osmanabad 413 613, MS (India); Shirsath, Sagar E., E-mail: shirsathsagar@hotmail.com [Spin Device Technology Center, Department of Information Engineering, Shinshu University, Nagano 380-8553 (Japan)

    2014-08-01

    Highlights: • Rare earth Ho{sup 3+} substituted CoFe{sub 2}O{sub 4.} • XRD and IR spectra reveal the spinel structure. • Magnetization and coercivity increased with Ho{sup 3+} substitution. - Abstract: Substitution effect of rare earth trivalent Ho{sup 3+} ions on the composition, Ho{sub x}CoFe{sub 2−x}O{sub 4}, with x varying from 0.0 to 0.1 in steps of 0.025 using sol–gel auto combustion route has been investigated. Examination of X-ray diffraction (XRD) patterns shows that all the samples consisted of ferrite phases of typical spinel cubic structure, and when Ho{sup 3+} ion content was x ⩾ 0.075, orthoferrite–HoFeO{sub 3} phase was detected. The micro and nanostructure of the synthesized Ho doped CoFe{sub 2}O{sub 4} ferrites were investigated by scanning and transmission electron microscopy respectively. With increasing doping content of Ho{sup 3+} ions, the lattice constant, particle size and bulk density increased, and after an increase to its maximum value, the sample particle size and density dropped down. Cation distribution estimated from XRD patter revealed that the Co{sup 2+} and Ho{sup 3+} ions prefer to occupy octahedral B-site whereas Fe{sup 3+} ions are distributed over tetra- and octa-hedral site. Oxygen positional parameter shows larger values than its ideal value. The analysis of magnetic properties revealed that the saturation magnetization and coercivity of CoFe{sub 2}O{sub 4} increased with the rare earth Ho{sup 3+} substitution.

  16. Semiconductor laser shearing interferometer

    International Nuclear Information System (INIS)

    Ming Hai; Li Ming; Chen Nong; Xie Jiaping

    1988-03-01

    The application of semiconductor laser on grating shearing interferometry is studied experimentally in the present paper. The method measuring the coherence of semiconductor laser beam by ion etching double frequency grating is proposed. The experimental result of lens aberration with semiconductor laser shearing interferometer is given. Talbot shearing interferometry of semiconductor laser is also described. (author). 2 refs, 9 figs

  17. Influence of rare-earth additives (La, Sm and Dy on the microstructure and dielectric properties of doped BaTiO3 ceramics

    Directory of Open Access Journals (Sweden)

    Paunović Vesna

    2010-01-01

    Full Text Available A series of La/Mn, Sm/Mn and Dy/Mn codoped BaTiO3 samples were prepared by the conventional solid state procedure with dopant concentrations ranging from 0.1 up to 2.0 at%. The specimens were sintered at 1320°C and 1350°C in an air atmosphere for two hours. The low doped samples demonstrated a mainly uniform and homogeneous microstructure with average grain sizes ranging from 0.3 μm to 5.0 μm. The appearance of secondary abnormal grains in the fine grain matrix and core-shell structure were observed in highly doped La/BaTiO3 and Dy/BaTiO3 sintered at 1350°C. The low doped samples, sintered at 1350°C, display a high value of dielectric permittivity at room temperature, 6800 for Sm/BaTiO3, 5900 for Dy/BaTiO3 and 3100 for La/BaTiO3. A nearly flat permittivity-response was obtained in specimens with 2.0 at% additive content. Using a modified Curie-Weiss law the Curie-like constant C⁄ and a critical exponent γ were calculated. The obtained values of γ pointed out the diffuse phase transformation in heavily doped BaTiO3 samples.

  18. Density-functional study on the robust ferromagnetism in rare-earth element Yb-doped SnO{sub 2}

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Kai-Cheng, E-mail: kczhang@yeah.net [College of Mathematics and Physics, Bohai University, Jinzhou 121013 (China); Li, Yong-Feng [Key Laboratory of Integrated Exploitation of Bayan Obo Multi-Metal ResourcesInner Mongolia University of Science and Technology, Baotou 014010 (China); School of Mathematics, Physics and Biological Engineering, Inner Mongolia University of Science and Technology, Baotou 014010 (China); Liu, Yong [State Key Laboratory of Metastable Materials Science and Technology and College of Science, Yanshan University, Qinhuangdao, Hebei 066004 (China); Chi, Feng [College of Engineering, Bohai University, Jinzhou 121013 (China)

    2014-06-01

    So far, little has been known about the ferromagnetism induced by p–f hybridization. We investigate the magnetic properties of Yb-doped SnO{sub 2} by first-principles calculations. We find that the doped system favors the ferromagnetic state and a room-temperature ferromagnetism can be expected in it. The origin of ferromagnetism can be attributed to the p–f hybridization between Yb impurity and its surrounding oxygen atoms. The formation energy of defect complex is calculated and the magnetic mediation of intrinsic vacancies is studied. Our results reveal that the formation energy of the defect complex with Sn vacancy is about 7.3 eV lower in energy than that with oxygen vacancy. This means Sn vacancy is much easier to form than oxygen vacancy in the presence of Yb substitution. The ferromagnetism of the doped system is greatly enhanced in the presence of Sn vacancies. - Highlights: • Room-temperature ferromagnetism can be expected in Yb-doped SnO{sub 2}. • The origin of ferromagnetism can be attributed to the p–f hybridization between Yb and O atoms. • Oxygen vacancies are much hard to form and contribute little to the ferromagnetism. • Sn vacancies are easy to form under oxygen-rich condition and stabilize the ferromagnetism effectively.

  19. Magnetic and dielectric properties of alkaline earth Ca2+ and Ba2+ ions co-doped BiFeO3 nanoparticles

    International Nuclear Information System (INIS)

    Yang, C.; Liu, C.Z.; Wang, C.M.; Zhang, W.G.; Jiang, J.S.

    2012-01-01

    Ca 2+ and Ba 2+ ions co-doped BiFeO 3 nanoparticles, Bi 0.8 Ca 0.2−x Ba x FeO 3 (x=0–0.20), were prepared by a sol–gel method. The phase structure, grain size, dielectric and magnetic properties of the prepared samples were investigated. The results showed that the lattice structure of the nanoparticles transformed from rhombohedral (x=0) to orthorhombic (x=0.07–0.19) and then to tetragonal (x=0.20) with x increased. The dielectric properties of the nanoparticles were affected by the properties of the substitutional ions as well as the crystalline structure of the samples. The magnetic properties of the nanoparticles were greatly improved and the T N of the nanoparticles was obviously increased. All the Ca 2+ and Ba 2+ ions co-doped BiFeO 3 nanoparticles presented the high ratio of M r /M from 0.527 to 0.571 and large coercivity from 4.335 to 5.163 KOe. - Highlights: ► Ca 2+ and Ba 2+ ions co-doped BiFeO 3 nanoparticles were prepared using a sol–gel method. ► The magnetic properties of the nanoparticles are greatly improved. ► The Neel temperature (T N ) of the nanoparticles is greatly increased. ► Doped ions and crystal structure affect the dielectric properties of the nanoparticles.

  20. Thermal neutron imaging with rare-earth-ion-doped LiCaAlF{sub 6} scintillators and a sealed {sup 252}Cf source

    Energy Technology Data Exchange (ETDEWEB)

    Kawaguchi, Noriaki, E-mail: famicom@mail.tagen.tohoku.ac.jp [Tokuyama Corporation, Shibuya 3-chome, Shibuya-ku, Tokyo 150-8383 (Japan); IMRAM, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai, Miyagi 980-8577 (Japan); Yanagida, Takayuki; Fujimoto, Yutaka; Yokota, Yuui; Kamada, Kei [IMRAM, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai, Miyagi 980-8577 (Japan); Fukuda, Kentaro; Suyama, Toshihisa [Tokuyama Corporation, Shibuya 3-chome, Shibuya-ku, Tokyo 150-8383 (Japan); Watanabe, Kenichi; Yamazaki, Atsushi [Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan); Chani, Valery [IMRAM, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai, Miyagi 980-8577 (Japan); Yoshikawa, Akira [IMRAM, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai, Miyagi 980-8577 (Japan); New Industry Creation Hatchery Center, Tohoku University, Sendai 980-8579 (Japan)

    2011-10-01

    Thermal neutron imaging with Ce-doped LiCaAlF{sub 6} crystals has been performed. The prototype of the neutron imager using a Ce-doped LiCaAlF{sub 6} scintillating crystal and a position sensitive photomultiplier tube (PSPMT) which had 64 multi-channel anode was developed. The Ce-doped LiCaAlF{sub 6} single crystal was grown by the Czochralski method. A plate with dimensions of a diameter of 50x2 mm{sup 2} was cut from the grown crystal, polished, and optically coupled to PSPMT by silicone grease. The {sup 252}Cf source (<1 MBq) was sealed with 43 mm of polyethylene for neutron thermalization. Alphabet-shaped Cd pieces with a thickness of 2 mm were used as a mask for the thermal neutrons. After corrections for the pedestals and gain of each pixel, we successfully obtained two-dimensional neutron images using Ce-doped LiCaAlF{sub 6}.