WorldWideScience

Sample records for du soi alignement

  1. DU COTÉ DE CHEZ SOI

    OpenAIRE

    Marc Smeets

    2013-01-01

    Le voyage en Hollande, au XIXe siècle, s'inscrit dans une longue tradition où résonnent les notions de liberté, tolérance et commerce, mais il acquiert aussi une spécificité étant donné l’importance que prend la figure du « chez soi » : les Pays-Bas, terre d'agrément où le voyageur français se sent à l'aise et où il aimerait, si possible, vivre. Proust, de ce point de vue-là, ne fait rien de neuf quand il rêve dans la Recherche d'une « vie domestique » en terre batave. Les Pays-Bas, pour le v...

  2. DU COTÉ DE CHEZ SOI

    Directory of Open Access Journals (Sweden)

    Marc Smeets

    2013-12-01

    Full Text Available Le voyage en Hollande, au XIXe siècle, s'inscrit dans une longue tradition où résonnent les notions de liberté, tolérance et commerce, mais il acquiert aussi une spécificité étant donné l’importance que prend la figure du « chez soi » : les Pays-Bas, terre d'agrément où le voyageur français se sent à l'aise et où il aimerait, si possible, vivre. Proust, de ce point de vue-là, ne fait rien de neuf quand il rêve dans la Recherche d'une « vie domestique » en terre batave. Les Pays-Bas, pour le voyageur français au XIXe, c'est le home sweet home.

  3. L'habiter ou le sentiment du chez soi

    Directory of Open Access Journals (Sweden)

    Rajaa Stitou

    Full Text Available Il s’agit ici d’une contribution à un travail de réflexion clinique sur les incidences de l’habiter et du sentiment de chez soi. Ces incidences à travers lesquelles se manifeste tout un bouleversement de l’unité illusoire mais nécessaire dans laquelle se loge l’identité, s’exacerbe en terre étrangère au point d’exposer certains sujets expatriés à des risques de défaillance qui les empêchent d’investir de nouveaux liens, de se soutenir dans le monde. L’expérience clinique nous montre que l’habiter comme l’exil ne sont pas réductibles aux seules considérations territoriales et ethniques. Ils concernent chaque sujet dans son rapport à l’inconnu de son origine, de son appartenance et de son destin. L’expatriation ne fait que réactualiser cette épreuve de l’inconnu que tout un chacun peut élaborer en fonction de son histoire. Elle nous amène par ailleurs à reconsidérer la difficulté de penser l’articulation entre le sujet et le collectif, entre les processus psychique et le fait culturel.

  4. Propriété de soi et indifférence morale du rapport à soi

    Directory of Open Access Journals (Sweden)

    Nathalie Maillard Romagnoli

    2011-05-01

    Full Text Available Je m’interroge dans cet article sur les implications du principe libertarien de la pleine propriété de soi sur la question du rapport moral à soi-même. À travers le principe de la pleine propriété de soi, les libertariens défendent la liberté entière de chacun de vivre comme il l���entend, pourvu que les droits des autres soient respectés. Apparemment, ce principe n’a pas grand-chose à nous dire sur ce que nous sommes moralement autorisés à nous faire à nous-mêmes ou non. Certains libertariens, comme Vallentyne, soutiennent toutefois que le principe de la pleine propriété de soi est incompatible avec l’existence de devoirs envers soi. La pleine propriété de soi impliquerait l’indifférence morale du rapport à soi. Je soutiens dans cet article que le principe de la pleine propriété de soi n’implique pas que ce que nous nous faisons à nous-mêmes soit moralement indifférent. Je veux aussi montrer que même si les libertariens, et en particulier Vallentyne, soutiennent la thèse de l’indifférence morale du rapport à soi, celle-ci n’est pas liée à la thèse de la pleine propriété de soi, mais bien plutôt à leur subjectivisme moral.ABSTRACTI ask in this article what the libertarian principle of full self-ownership has to say about volontary actions directed towards oneself. Through the principle of full self-ownership, libertarians defend the persons’ individual liberty to live as they choose to do, as long as they don’t infringe on the rights of others. Apparently, this principle doesn’t have much to say about what we are morally allowed to do to ourselves or not. Some libertarians, however, like Vallentyne, maintain that, if we have duties or obligations to ourselves, then we cannot be full self-owner. In this perspective, full self-ownership would imply that what we do to ourselves is morally indifferent. I want to show in this article that full self-ownership is compatible with the

  5. Du discours sur l'Autre au discours sur soi : Le Voyage en Orient de Lamartine

    OpenAIRE

    magri-mourgues, Véronique,

    2001-01-01

    International audience; L'article veut montrer comment le discours sur l'Autre, l'étranger, peut se muer en discours réflexif sur soi. Un parcours est accompli depuis les discours antérieurs au voyage jusqu'au discours pour soi en passant par les stratégies du rapprochement entre l'Autre et le Même. Le décentrement salutaire opéré par l'approche de l'Autre n'est que temporaire même s'il s'avère nécessaire pour la (re)connaissance du Même.

  6. L’empathie comme outil herméneutique du soi: Note sur Paul Ricœur et Heinz Kohut

    Directory of Open Access Journals (Sweden)

    Michel Dupuis

    2011-01-01

    Full Text Available Le bref texte que Paul Ricœur consacre en 1986 à la psychanalyse développée par Heinz Kohut révèle une réinterprétation phénoménologique à la fois du contenu et des fonctions de l'empathie, au total considérée comme un véritable outil à l'œuvre dans l'herméneutique du soi. La vision kohutienne de la constitution du soi et du processus thérapeutique analytique produit une espèce de “dé-sentimentalisation” de l'empathie, en soulignant le rôle crucial du transfert intersubjectif, fort à distance de la théorie (freudienne solipsiste de l'ego.The short text published in 1986 by Paul Ricoeur about Heinz Kohut's psychoanalysis of the self reveals a phenomenological reinterpretation of the content and the functions of empathy, finally considered as an effective tool of the hermeneutics of the self. Kohut's model of constitution of the self and of the therapeutic analytical process produces a kind of “de-sentimentalization” of empathy, pointing to the crucial role of intersubjective transfer, far from a (Freudian solipsistic theory of the ego.

  7. Une genese du «parler de soi » du deja-la a l’evocation de l’absent dans l’activite dialogique du tout jeune enfant

    Directory of Open Access Journals (Sweden)

    Amina Bensalah

    2010-12-01

    Full Text Available

    L’analyse porte sur des productions langagières verbales et non-verbales les plus ordinaires entre des adultes et de très jeunes enfants âgés de moins de deux ans. En articulant les notions de l’évocation de l’absent et du déjà-là, notions qui mettent en avant le processus d’une «temporalité-spatialisée», je problématise la genèse d’un soi comme objet qui se donne à voir dans et par l’activité discursive. Mon hypothèse est que, s’agissant du tout jeune enfant qui ne peut donc s’auto-thématiser ni référer à lui-même de façon explicite, c’est bien dans l’évocation d’autrui et d’autres objets du monde qu’indirectement, il nous «parle» de lui. Trois éléments viennent étayer ma réfl exion pour répondre à la problématique posée : les notions de temporalité, de spatialité et d’affect. Elles sont clairement présentes dans les initiatives de demande, dans les mouvements des échanges et dans les séquences «pré-narratives» produites par l’enfant. Au vu des corpus, ces trois notions m’ont paru inséparables du lieu même où elles font ancrage, à savoir : l’interaction et le dialogue avec l’autre. L’approche adoptée dans l’analyse pour argumenter l’idée de l’expression d’un «parler de soi» chez le tout jeune enfant n’est pas tant, au sens strict, de type linguistique que de type pragmatique. Aussi, j’analyse les effets réciproques entre l’interaction et les échanges qui la modèlent.

  8. Écritures de soi en souffrance: une lecture des régimes structurant l’imaginaire du texte social vivant

    Directory of Open Access Journals (Sweden)

    Orazio Maria Valastro

    2010-02-01

    Full Text Available Les études ici réunies vont nous permettre d’examiner différentes genres d’écritures et typologies d’écrivains (poétique et épistolaire, roman autobiographique et autofiction, narratif et témoignage, explorant un corpus considérable (œuvres littéraires et littératures personnelles et des pratiques significatives (activités narratives et autobiographiques. Le thème proposé, les écritures de soi en souffrance, se dénoue sollicitant une réflexion sur les rapports entre les œuvres et les différents contextes sociaux et historiques. Nous pouvons envisager et saisir l’ensemble du corpus et des pratiques considérées en tant que texte social vivant, inscrivant l’expérience de l’existence et du monde dans la pratique de l’écriture. (... Nous allons solliciter et proposer une lecture sociologique et anthropologique de l’ensemble des études proposés au sein du numéro monographique, privilégiant une analyse de la matrice du discours social structurant la conscience individuelle et collective.

  9. Edge Couplers with relaxed Alignment Tolerance for Pick-and-Place Hybrid Integration of III-V Lasers with SOI Waveguides

    CERN Document Server

    Romero-García, Sebastian; Merget, Florian; Shen, Bin; Witzens, Jeremy

    2013-01-01

    We report on two edge-coupling and power splitting devices for hybrid integration of III-V lasers with sub-micrometric silicon-on-insulator (SOI) waveguides. The proposed devices relax the horizontal alignment tolerances required to achieve high coupling efficiencies and are suitable for passively aligned assembly with pick-and-place tools. Light is coupled to two on-chip single mode SOI waveguides with almost identical power coupling efficiency, but with a varying relative phase accommodating the lateral misalignment between the laser diode and the coupling devices, and is suitable for the implementation of parallel optics transmitters. Experimental characterization with both a lensed fiber and a Fabry-P\\'erot semiconductor laser diode has been performed. Excess insertion losses (in addition to the 3 dB splitting) taken as the worst case over both waveguides of respectively 2 dB and 3.1 dB, as well as excellent 1 dB horizontal loss misalignment ranges of respectively 2.8 um and 3.8 um (worst case over both i...

  10. La négociation du soi et la situation de maladie : Questions pour la sociologie médicale

    OpenAIRE

    Calvez, Marcel

    2010-01-01

    L'article reprend sous une forme largement remaniée la conférence de clôture du colloque « Le soin négocié. Entre malades, proches et professionnels » organisé par l'ARS (Atelier de recherche sociologique) de l'Université de Bretagne Occidentale à Brest (8-9 octobre 2009).; International audience; La production du soin mobilise une pluralité acteurs qui ont des points de vue différents sur la maladie. Elle ne peut donc pas être regardée comme une activité ressortissant exclusivement aux profe...

  11. Un meuble à soi

    Directory of Open Access Journals (Sweden)

    Françoise Le Bouar

    2012-11-01

    Full Text Available À partir d’un souvenir d’enfance de Walter Benjamin, l’article envisage le fait d’avoir « un coin » à soi – espace ou meuble – comme constitutif de la personnalité, comme favorable à l’activité de la pensée, au travail de l’imagination. Du pupitre à l’habitacle de Bruno Munari, le « meuble à soi » serait pour l’enfant une deuxième peau lui offrant dans le même temps protection et inspiration, une cabine à sa taille où puisse se loger l’aventure de l’esprit, une chrysalide dans laquelle s’envelopper pour s’envoler.

  12. Vécu des situations scolaires, estime de soi et Développement : du jugement moral a la période de la latence

    Directory of Open Access Journals (Sweden)

    Emile-Henri Riard

    2011-06-01

    Full Text Available Suivant une approche de psychologie sociale clinique, le point de vue adopté dans cet article est triple : 1- considérer les situations scolaires “ ordinaires ” comme potentiellement génératrices de difficultés; 2- s’inscrire en amont de l’adolescence afin d’améliorer la compréhension de cette dernière; 3 – considérer le vécu des élèves. La recherche menée en France (enfants de 6 à 11 ans, par questionnaire (48 situations relevant de la scolarité : classe, cour de récréation, trajet domicile/école et domicile ont été proposées ; test d’estime de soi (Coopersmith ; développement moral (Kohlberg. Variables : âge, sexe, mode d’habitat, position scolaire, classement, département. Les résultats (analyse de variance démontrent un fonctionnement “ en bloc ” du niveau de vécu de difficulté. Ressortent comme variables significatives, par ordre d’importance décroissante: le sexe (les garçons ressentent davantage les difficultés que les filles; l’âge (le niveau de difficulté vécue décroît avec l’âge mais concerne surtout la cour de récréation ; le mode d’habitat (collectif. La classe est l’espace le plus porteur de différences de vécu de difficultés indépendamment des variables. Le niveau d’autonomie et l’estime de soi sont schématiquement inversement proportionnés au niveau de difficulté vécu. La conclusion met l’accent sur l’importance des effets interactif et d’accumulation des situations.

  13. La nouvelle éthique du travail au service de l’entreprise de soi ?

    Directory of Open Access Journals (Sweden)

    Dominique Méda

    2011-07-01

    Full Text Available L’ouvrage de Daniel Mercure et Mircea Vultur constitue de mon point de vue un apport majeur aux débats actuellement en cours en sociologie – mais aussi dans d’autres disciplines – sur la « valeur-travail » et les évolutions de celle-ci. Il fera date au sens où – à supposer que la sociologie d’un objet, d’un thème ou d’un champ soit semblable à l’édification d’un bâtiment – il permet, à un moment donné de l’accumulation du savoir, d’atteindre à partir d’un point de vue stabilisé une vision pan...

  14. High Performance P-Channel Schottky Barrier MOSFETs with Self-Aligned PtSi Source/Drain on Thin Film SOI Substrate

    Institute of Scientific and Technical Information of China (English)

    ZHU Shi-Yang; LI Ming-Fu

    2005-01-01

    @@ P-channel metal-oxide-semiconductor field-effect transistors (MOSFETs) with PtSi Schottky barrier source/drain, high-k gate dielectric and metal gate electrode were fabricated on a thin p-type silicon-on-insulator (SOI) substrateusing a simplified low temperature process. The device works on a fully-depleted accumulation-mode and hasan excellent electrical performance. It reaches Ion/Ioff ratio of about 107, subthreshold swing of 65mV/decade and saturation drain current of Ids= 8.8μA/μm at |Vg - Vth| = |Vd| = 1 V for devices with the channel length 4.0μm and the equivalent oxide thickness 2.0nm. Compared to the corresponding bulk-Si counterparts, SOI p-SBMOSFETs have smaller off-state current due to reduction of the PtSi/Si contact area.

  15. Alignement général du CLIC: stratégie et progrès

    CERN Document Server

    Mainaud-Durand, H

    2008-01-01

    La faisabilité concernant le pré-alignement actif du CLIC sera démontrée si l?on peut prouver qu?il existe une référence et ses capteurs associés permettant l?alignement des composants à mieux que 3 microns (1?). Pour répondre à ce challenge, une méthode de mesure d?écarts à un fil tendu est proposée, basée sur 40 ans de pratique de cette technique au CERN. Quelques problèmes demeurent concernant cette méthode : la connaissance de la forme du fil tendu utilisé comme référence droite, la détermination du géoïde à la précision souhaitée et le développement de capteurs bas coût permettant des mesures sub-micrométriques. Des études ont été entreprises afin de lever les derniers points en suspens, pendant que cette solution est intégrée dans une proposition concernant l?alignement général du CLIC. Cela implique un grand nombre d?interactions au niveau du projet, dans des domaines aussi différents que le génie civil, l?intégration, la physique du faisceau, la métrologie des �...

  16. L’écriture de soi dans l’œuvre de Jean Starobinski. Une dialectique du subjectif et de l’objectif, du singulier et de l’universel

    Directory of Open Access Journals (Sweden)

    Cynthia Biron Cohen

    2009-05-01

    Full Text Available Une lecture attentive de la rhétorique critico-philosophique de Starobinski révèle qu’il existe une subjectivité englobant une contemplation réflexive tant au niveau de son discours interprétatif que de son argumentation. Bien qu’il ne s’agisse jamais d’une écriture dans laquelle le critique se dépeint lui-même, on y retrouve les mêmes démarches, les prédilections et les convictions de Starobinski lui-même. Autrement dit, l’écriture de soi est présente dans ses réflexions tant sur les penseurs du XVIIIe que sur les écrivains du XXe siècle, voire dans une étude de l’art et la littérature du XIXe siècle ; comme si Starobinski liait inextricablement les sujets traités à son propre moi. L’écriture lui servirait donc non seulement de tremplin à la réflexion personnelle et à des commentaires critiques, mais aussi à l’édification de sa personnalité. Cependant la raison profonde qui le porte à fuir l’introspection, à exclure toute critique d’identification, fait elle aussi l’objet d’une interrogation. Ma démarche consiste à déceler les traces d’autobiographie que Starobinski a laissées dans son parcours herméneutique. M’inspirant de l’approche critique de Michel Beaujour, je me propose de cerner les analogies et les correspondances entre la pratique esthétique de Starobinski et son vécu contemporain, à travers l’articulation de son discours interprétatif et son orientation éthique. Une attention particulière est accordée aux procédés rhétoriques, fournissant un modèle structural révélateur de son mode de pensée. Mon objectif est de voir comment ses textes, tout en relevant des questions philosophiques ou esthétiques, laissent affleurer des identifications sous forme d’énoncés qui peuvent être appliquées à la personnalité et à la pensée starobinskiennes.A careful reading of Starobinski’s critical and philosophical rhetoric uncovers a subjectivity subdued with

  17. Les parcours d’insertion à l’épreuve du travail sur soi Courses of Insertion on Trial : Working on Oneself. Resuming Studies and Professional Reconversion

    Directory of Open Access Journals (Sweden)

    Catherine Négroni

    2011-12-01

    Full Text Available Cet article se propose d’analyser les parcours d’étudiants “atypiques” : des adultes actifs qui, lors de la reprise des études, sont obligés de mener une reconversion professionnelle. Nous nous appuierons sur un dispositif spécifique d’une université française, le DUFA, un diplôme universitaire de formation d’adultes, dont la vocation première est de faciliter les bifurcations professionnelles grâce à des dispositifs particuliers de formation. L’objectif de l’article est de démontrer que, pour ces étudiants, contrairement à ce que bien des responsables de ces dispositifs affirment, le principal écueil de l’insertion est souvent, de manière étonnante, de nature subjective : aussi longtemps qu’un travail de “latence identitaire” n’est pas achevé, la motivation fait souvent défaut et l’insertion, même lorsqu’elle a lieu, s’avère instable. Après quelques éléments de cadrage statistique, nous étudierons en détail, à l’aide des techniques qualitatives (entretiens et récits de vie approfondis, différentes logiques et attentes des acteurs concernant la formation dont nous rendrons compte à travers une typologie, mais surtout les différentes facettes du “travail de soi sur soi” effectué par ces étudiants.This article proposes analysing the “atypical” routes of students: active adults who, in resuming studies, are obliged to go through a professional reconversion. We will be concentrate on a specific programme of a French university, the DUFA, a university degree in adult education, whose primary vocation is to facilitate professional bifurcations thanks to particular training programmes. The article’s goal is to show that for these students, as opposed to what many persons in charge of these institutions affirm, the principal pitfall of such insertion is often astonishing and of subjective nature: as a long as a work of “identity latency” is not passed, is not achieved, the

  18. Silicon on insulator (SOI) technology; Technologie silicium sur isolant (SOI)

    Energy Technology Data Exchange (ETDEWEB)

    Cristoloveanu, S.; Balestra, F. [Centre National de la Recherche Scientifique (CNRS), Institut de Microelectronique, Electromagnetisme et Photonique, IMEP, Ecole Nationale Superieure d' Electronique et de Radioelectricite de Grenoble, ENSERG, 38 - Grenoble (France)

    2002-05-01

    The silicon on insulator (SOI) technology was invented in the 1960's and 1970's in order to satisfy the demand of hardened integrated circuits with respect to ionizing radiations. This technology uses an embedded oxide for a perfect dielectric insulation between the active circuit (superficial) layer and the massive silicon substrate (responsible of undesirable parasite effects). The SOI technology is a first-class technology for the fabrication of low consumption and high frequency components. This article describes the state-of-the-art of the SOI technology, starting with the methods of synthesis of the main materials. The essential advantages of SOI circuits with respect to conventional massive silicon devices are presented with some typical examples of components (totally or partially depleted MOS transistors, miniaturization of conventional MOS transistors, innovative architectures). Finally the challenges to be taken up by the SOI technology to spread over the market of microelectronics are discussed. (J.S.)

  19. SOI LEDs with carrier confinement

    NARCIS (Netherlands)

    Hoang, T.; Holleman, J.; Schmitz, Jurriaan

    2008-01-01

    Silicon-On-Insulator (SOI) technology exhibits significant performance advantages over conventional bulk silicon technology in both electronics and optoelectronics. In this chapter we present an overview of recent applications on light emission from SOI materials. Particularly, in our work we used

  20. Mourir chez soi

    Science.gov (United States)

    Kiyanda, Brigitte Gagnon; Dechêne, Geneviève; Marchand, Robert

    2015-01-01

    Résumé Objectif Démontrer que des infirmières dédiées en soins palliatifs d’un centre local de services communautaires (CLSC) urbain peuvent garder à domicile jusqu’au décès plus de 50 % de leurs patients en fin de vie et que le suivi médical à domicile est un facteur déterminant du décès à domicile. Type d’étude Analyse du lieu de décès des patients décédés en 2012 et 2013 suivis par les infirmières dédiées (N = 212), en fonction du suivi médical. Contexte Soins palliatifs du CLSC de Verdun, un territoire urbain situé dans le sud-ouest de Montréal. Participants Un total de 212 patients en fin de vie décédés en 2012 et 2013, suivis par 3 infirmières dédiées en soins palliatifs. Principaux paramètres à l’étude Le pourcentage de décès à domicile. Résultats Des 212 patients suivis à domicile par les infirmières en soins palliatifs, 56,6 % sont décédés à domicile, 62,6 % lorsque suivis par des médecins à domicile du CLSC, contre 5,0 % lorsque sans médecin à domicile. Conclusion Le développement des services médicaux à domicile au Québec, couplé à une simple restructuration des services de soins infirmiers des CLSC, permettrait à plus de 50 % des patients en fin de vie à domicile suivis par ces CLSC d’y demeurer jusqu’au décès, le souhait d’une majorité.

  1. Au risque de soi: L’événement et la relation

    Directory of Open Access Journals (Sweden)

    Marc-Antoine Vallée

    2012-12-01

    Full Text Available Ce texte s’efforce de définir la contribution possible de la phénoménologie française contemporaine au développement et à la radicalisation du projet d’une herméneutique du soi. Il s’agit, plus spécifiquement, de préciser quelle conception décentrée du soi ressort des récents travaux de Claude Romano sur l’événement et d’Emmanuel Housset sur la dimension relationnelle de la personne. Pour ce faire, l’auteur insiste sur les convergences entre les deux œuvres, tout en s’interrogeant sur les limites de ces approches.

  2. Study and control of the alignment of the SILHI beam; Etude et mesure de l'alignement du faisceau de SILHI

    Energy Technology Data Exchange (ETDEWEB)

    Uriot, D

    2005-02-15

    The low energy line of the IPHI injector includes 2 couples of magnetic deflectors operating in 2 transverse directions. This work aims at assessing the capacity of these deflectors to collimate efficiently the beam in the RFQ (radio-frequency quadrupole) inlet. There are 4 main causes of mis-alignment : first, the misalignment of the line components such as the ECR source or the 2 solenoids; second, the earth magnetic field; third the non-linear and non-axisymmetric forces due to charge distribution inside the beam tend to break the beam's circular symmetry; and four, particle losses tend to shift the centre of mass of the beam. It appears that the power of the deflectors is sufficient, in the SILHI present scheme, to center the beam at the interface with RFQ. Moving away the 2 deflectors from each other will improve their efficiency. The alignment procedures are complex: setting first the solenoid fields before the deflectors' could make the task easier but an advanced automated algorithm seems necessary. (A.C.)

  3. Conséquences des perturbations de la gravité sur l'alignement du CLIC

    CERN Document Server

    Becker, F

    1999-01-01

    For the CLIC alignment, the accuracy required for the definition of the geometrical references entails the evaluation of the effects of the Earth's gravity field's disturbances. The distortions of the WPS wires, of the water in the hydrostatic levelling network and of the ground resulting from the Moon and the Sun's attractions and from the neighbouring masses are therefore estimated. Solutions are suggested for the distortions important enough to have to be taken into account.

  4. Parler au nom de nos Soi(s)

    OpenAIRE

    Humphrey, Nicholas; Dennett, Daniel C.

    2013-01-01

    Le trouble de personnalité multiple, s’il existe, est plus qu’un phénomène psychiatrique exotique. Il soulève – et peut-être peut aider à résoudre – des questions fondamentales sur ce qu’être un Soi signifie. Speaking for our SelvesAn assessment of multiple personality disorderMultiple Personality Disorder, if it exists, is more than an exotic psychiatric phenomenon: it raises – and can perhaps help answer – fundamental questions about

  5. SOI MESFETs for Extreme Environment Electronics Project

    Data.gov (United States)

    National Aeronautics and Space Administration — We are proposing a new extreme environment electronics (EEE) technology based on silicon-on-insulator (SOI) metal-semiconductor field-effect transistors (MESFETs)....

  6. Méditation et pratique de soi chez Malebranche.

    Directory of Open Access Journals (Sweden)

    Éric Dubreucq

    2004-04-01

    Full Text Available Une étude des Méditations pour se disposer à l’Humilité et à la pénitence qui les replace dans le cadre des pratiques de son époque, par exemple, chez François de Sales, celles de l’oraison, de la méditation et de la contemplation, permet d’apercevoir que l’une des thèses majeures du malebranchisme, la vision en Dieu, est un effet instauré dans le destinataire par un dispositif textuel. Celui-ci tire sa puissance prescriptive de l’a priori pratique où il s’inscrit. C’est à une opération de production de soi que l’exercice spirituel donne lieu : l’analyse des quatre premières Méditations chrétiennes et métaphysiques, en particulier, montre que c’est une organisation de la substance personnelle que provoque le travail spirituel sur soi. Celui-ci consiste à déterminer le rapport à soi comme relation d’une vision attentive à une activité illuminante, par un décentrement textuel du « je » vers le « tu ».One of the major Malebranche’s assertion, that we see truth in God, is not a mere theoretical thesis. I study first the Méditations pour se disposer à l’Humilité et à la pénitence and compare them with François de Sales’ spiritual exercitations, and show that prayer, meditation and contemplation constitute the practical frameworks of this period. The text of the Méditations is an apparatus which is fit to cause an effect in its target – the self of the reader : the vision in God. The practical a priori of the meditation provides the text with prescriptive power to transform the self. Then I study the Méditations chrétiennes et métaphysiques i-iv : we see that Malebranche set his textual apparatus so that it prescribes its receiver a form of « work-on-one’s-self ». The self is here produced by the organisation of relationship between attentive vision and lighting action, and this structure is built in the self by a movement, induced by the text, which leads the self from

  7. Mid-infrared photonics devices in SOI

    Science.gov (United States)

    Mashanovich, G. Z.; Nedeljkovic, M.; Milošević, M. M.; Hu, Y.; Ben Masaud, T. M.; Jaberansary, E.; Chen, X.; Strain, M.; Sorel, M.; Peacock, A. C.; Chong, H. M. H.; Reed, G. T.

    2013-02-01

    In this paper we present silicon photonics devices designed for the 3-4μm wavelength region including waveguides, MMIs, ring resonators and Mach-Zehnder interferometers. The devices are based on silicon on insulator (SOI) platform. We show that 400-500 nm high silicon waveguides can have propagation losses as low as ~ 4 dB/cm at 3.8μm. We also demonstrate MMIs with insertion loss of 0.25 dB, high extinction ratio asymmetric Mach-Zehnder interferometers, and SOI ring resonators. This combined with our previous results reported at 3.4μm confirm that SOI is a viable platform for the 3-4 μm region and that low loss mid-infrared passive devices can be realized on it.

  8. Investigation solution to improve the irradiation reliability of SOI NMOSFET

    Institute of Scientific and Technical Information of China (English)

    2008-01-01

    A solution is developed to improve the irradiation reliability of SOI NMOSFET(N-type Metal Oxide Semiconductor Field Effect Transistor).This solution,including SOI(Silicon On Insulator)wafer hardening and transistor structure hardening,protects the SOI circuit from total dose irradiation effect.

  9. SOI silicon on glass for optical MEMS

    DEFF Research Database (Denmark)

    Larsen, Kristian Pontoppidan; Ravnkilde, Jan Tue; Hansen, Ole

    2003-01-01

    A newly developed fabrication method for fabrication of single crystalline Si (SCS) components on glass, utilizing Deep Reactive Ion Etching (DRIE) of a Silicon On Insulator (SOI) wafer is presented. The devices are packaged at wafer level in a glass-silicon-glass (GSG) stack by anodic bonding...... and a final sealing at the interconnects can be performed using a suitable polymer. Packaged MEMS on glass are advantageous within Optical MEMS and for sensitive capacitive devices. We report on experiences with bonding SOI to Pyrex. Uniform DRIE shallow and deep etching was achieved by a combination...

  10. RF SOI CMOS technology on 1st and 2nd generation trap-rich high resistivity SOI wafers

    Science.gov (United States)

    Kazemi Esfeh, B.; Makovejev, S.; Basso, Didier; Desbonnets, Eric; Kilchytska, V.; Flandre, D.; Raskin, J.-P.

    2017-02-01

    In this work three different types of UNIBOND™ Silicon-on-Insulator (SOI) wafers including one standard HR-SOI and two types of trap-rich high resistivity HR-SOI substrates named enhanced signal integrity high resistivity silicon-on-insulator (eSI HR-SOI) provided by SOITEC are studied and compared. The DC and RF performances of these wafers are compared by means of passive and active devices such as coplanar waveguide (CPW) lines, crosstalk- and noise injection-structures as well as partially-depleted (PD) SOI MOSFETs. It is demonstrated that by employing enhanced signal integrity high resistivity silicon-on-insulator (eSI HR-SOI) compared to HR-SOI wafer, a reduction of 24 dB is measured on both generations of trap-rich HR-SOI for 2nd harmonics. Furthermore, it is shown that in eSI HR-SOI, digital substrate noise is effectively reduced compared with HR-SOI. Purely capacitive behavior of eSI HR-SOI is demonstrated by crosstalk structure. Reduction of self-heating effect in the trap-rich HR-SOI with thinner BOX is finally studied.

  11. Novel SEU hardened PD SOI SRAM cell

    Institute of Scientific and Technical Information of China (English)

    Xie Chengmin; Wang Zhongfang; Wang Xihu; Wu Longsheng; Liu Youbao

    2011-01-01

    A novel SEU hardened 10T PD SOI SRAM cell is proposed.By dividing each pull-up and pull-down transistor in the cross-coupled inverters into two cascaded transistors,this cell suppresses the parasitic BJT and source-drain penetration charge collection effect in PD SOl transistor which causes the SEU in PD SOI SRAM.Mixed-mode simulation shows that this novel cell completely solves the SEU,where the ion affects the single transistor.Through analysis of the upset mechanism of this novel cell,SEU performance is roughly equal to the multiple-cell upset performance of a normal 6T SOI SRAM and it is thought that the SEU performance is 17 times greater than traditional 6T SRAM in 45nm PD SOI technology node based on the tested data of the references.To achieve this,the new cell adds four transistors and has a 43.4% area overhead and performance penalty.

  12. Distortion Behavior for SOI MOSFET%SOI MOSFET的失真行为

    Institute of Scientific and Technical Information of China (English)

    张国艳; 黄如; 张兴; 王阳元

    2003-01-01

    Distortion analysis of SOI MOS transistor is presented.By the power series method,the distortion behaviors of FD (fully depleted) and RC (recessed channel) SOI MOS transistor configurations are investigated.It is shown that the distortion figures deteriorate with the scaling down of channel length,and the RC SOI device shows better distortion performance than the FD SOI device.At the same time,the experimental data show that the ineffective body contact can lead to an increase of the harmonic amplitude due to the bulk resistance.The presented results give an intuitive knowledge for the design of low distortion mixed-signal integrated system.%采用幂级数方法对基于全耗尽(FD)SOI MOSFET和凹陷(RC)沟道SOI MOSFET的失真行为进行了研究,发现随着沟道长度的减小失真行为变坏,且RC SOI器件较FD器件具有更好的失真行为.同时,从实验数据可以看出,不理想的体接触会由于体分布电阻的增加而使失真行为变坏.该结果可以为低失真混合信号集成系统的设计提高指导方向.

  13. Fabrication of MEMS Resonators in Thin SOI

    CERN Document Server

    Grogg, D; Ionescu, Adrian Mihai

    2008-01-01

    A simple and fast process for micro-electromechanical (MEM) resonators with deep sub-micron transduction gaps in thin SOI is presented in this paper. Thin SOI wafers are important for advanced CMOS technology and thus are evaluated as resonator substrates for future co-integration with CMOS circuitry on a single chip. As the transduction capacitance scales with the resonator thickness, it is important to fabricate deep sub-micron trenches in order to achieve a good capacitive coupling. Through the combination of conventional UV-lithography and focused ion beam (FIB) milling the process needs only two lithography steps, enabling therefore a way for fast prototyping of MEM-resonators. Different FIB parameters and etching parameters are compared in this paper and their effect on the process are reported.

  14. Silicon pixel detector prototyping in SOI CMOS technology

    Science.gov (United States)

    Dasgupta, Roma; Bugiel, Szymon; Idzik, Marek; Kapusta, Piotr; Kucewicz, Wojciech; Turala, Michal

    2016-12-01

    The Silicon-On-Insulator (SOI) CMOS is one of the most advanced and promising technology for monolithic pixel detectors design. The insulator layer that is implemented inside the silicon crystal allows to integrate sensors matrix and readout electronic on a single wafer. Moreover, the separation of electronic and substrate increases also the SOI circuits performance. The parasitic capacitances to substrate are significantly reduced, so the electronic systems are faster and consume much less power. The authors of this presentation are the members of international SOIPIX collaboration, that is developing SOI pixel detectors in 200 nm Lapis Fully-Depleted, Low-Leakage SOI CMOS. This work shows a set of advantages of SOI technology and presents possibilities for pixel detector design SOI CMOS. In particular, the preliminary results of a Cracow chip are presented.

  15. An SEU resistant 256K SOI SRAM

    Science.gov (United States)

    Hite, L. R.; Lu, H.; Houston, T. W.; Hurta, D. S.; Bailey, W. E.

    1992-12-01

    A novel SEU (single event upset) resistant SRAM (static random access memory) cell has been implemented in a 256K SOI (silicon on insulator) SRAM that has attractive performance characteristics over the military temperature range of -55 to +125 C. These include worst-case access time of 40 ns with an active power of only 150 mW at 25 MHz, and a worst-case minimum WRITE pulse width of 20 ns. Measured SEU performance gives an Adams 10 percent worst-case error rate of 3.4 x 10 exp -11 errors/bit-day using the CRUP code with a conservative first-upset LET threshold. Modeling does show that higher bipolar gain than that measured on a sample from the SRAM lot would produce a lower error rate. Measurements show the worst-case supply voltage for SEU to be 5.5 V. Analysis has shown this to be primarily caused by the drain voltage dependence of the beta of the SOI parasitic bipolar transistor. Based on this, SEU experiments with SOI devices should include measurements as a function of supply voltage, rather than the traditional 4.5 V, to determine the worst-case condition.

  16. Modeling high-frequency capacitance in SOI MOS capacitors

    Science.gov (United States)

    Łukasiak, Lidia; Jasiński, Jakub; Beck, Romuald B.; Ikraiam, Fawzi A.

    2016-12-01

    This paper presents a model of high frequency capacitance of a SOI MOSCAP. The capacitance in strong inversion is described with minority carrier redistribution in the inversion layer taken into account. The efficiency of the computational process is significantly improved. Moreover, it is suitable for the simulation of thin-film SOI structures. It may also be applied to the characterization of non-standard SOI MOSCAPS e.g. with nanocrystalline body.

  17. C- V characterization of MOS capacitors in SOI structures

    Science.gov (United States)

    Rustagi, S. C.; Mohsen, Z. O.; Chandra, S.; Chand, A.

    1996-06-01

    The capacitance-voltage characterization of a MOS structure in the SOI film has been carried out and the results have been interpreted with the help of a numerical solution to the one-dimensional Laplace-Poisson's equation. Various parameters characterizing the SOI MOS structures have been extracted. It has been shown that the C- V data on a simple three-terminal SOI MOS capacitor structure can yield all the information such as the thickness of the gate oxide, buried-oxide as well as the SOI film, along with the doping density in the film and the substrate.

  18. A process for SOI resonators with surface micromachined covers and reduced electrostatic gaps

    Science.gov (United States)

    Dekker, James R.; Alastalo, Ari; Kattelus, Hannu

    2010-04-01

    This paper describes work to fabricate resonators on silicon-on-insulator (SOI) wafers with sub-micron gaps and wafer level encapsulation. Non-aligned, high-temperature fusion bonding of a cover wafer over unreleased structures etched into a SOI wafer is followed by cover wafer stripping to reveal etched resonators beneath an oxide membrane. Reliable bonding is assured by bonding unreleased structures which can withstand the appropriate pre-bond cleaning operations. The bonded oxide membrane serves as the basis of a surface micromachined membrane which incorporates silicon nitride and a porous polysilicon layer to facilitate release and supercritical drying. The cavity pressure is estimated to be in the range of 1 Torr. Encapsulated resonators were also made using a gap reduction process. The process is based on sidewall oxidation of an etched sleeve to reduce the linewidth of the patterned electrostatic gaps by 200 nm before the deep trench etch. Encapsulated and electrically active devices with gaps down to 500 nm were obtained and etched through a 5 µm thick SOI device layer. SEM images showed that gaps of 300 nm could reach through the same thickness, though functional devices were not obtained. In addition, limitations on the anti-notching process limited its use during the trench etch and resulted in severe notch damage.

  19. VCSELs and silicon light sources exploiting SOI grating mirrors

    DEFF Research Database (Denmark)

    Chung, Il-Sug; Mørk, Jesper

    2012-01-01

    In this talk, novel vertical-cavity laser structure consisting of a dielectric Bragg reflector, a III-V active region, and a high-index-contrast grating made in the Si layer of a silicon-on-insulator (SOI) wafer will be presented. In the Si light source version of this laser structure, the SOI gr...

  20. Fabrication and characterization of an SOI MEMS gyroscope

    Science.gov (United States)

    Weiwei, Zhong; Guowei, Han; Chaowei, Si; Jin, Ning; Fuhua, Yang

    2013-06-01

    This paper presents an SOI (silicon on insulator) MEMS (micro-electro-mechanical systems) vibratory gyroscope that was fabricated using bulk micromachining processes. In the gyroscope architecture, a frame structure that nests the proof mass is used to decouple the drive motion and sense motion. This approach ensures that the drive motion is well aligned with the designed drive axis, and minimizes the actual drive motion component along the sense detection axis. The thickness of the structural layer of the device is 100 μm, which induces a high elastic stiffness in the thickness direction, so it can suppress the high-order out-of-plane resonant modes to reduce deviation. In addition, the dynamics of the gyroscope indicate that higher driving mass brings about higher sensing displacements. The thick structural layer can improve the output of the device by offering a sufficient mass weight and large sensing capacitance. The preliminary test results of the vacuum packaged device under atmospheric pressure will be provided. The scale factor is 1.316 × 10-4 V/(deg/s), the scale factor nonlinearity and asymmetry are 1.87% and 0.36%, the zero-rate offset is 7.74 × 10-4 V, and the zero-rate stability is 404 deg/h, respectively.

  1. A Comparative Study on SOI MOSFETs for Low Power Applications

    Directory of Open Access Journals (Sweden)

    Khairul Affendi Rosli

    2013-03-01

    Full Text Available Silicon on Insulator (SOI technology has become one of the most promising technologies in semiconductor fabrication industry for its numerous advantages. This study presents merits and demerits of different SOIs presented in literatures and a comparative study is done based on several design and performance issues for low power applications. From the study it is found that Fully Depleted SOI MOSFET (FDSOI technology is preferred due to its thin size, reduced leakage current and improved power consumption characteristics etc. compared to those of PDSOI and bulk silicon technology.

  2. NEURAL NETWORK FOR THE QUANTUM CORRECTION OF NANOSCALE SOI MOSFETS

    Institute of Scientific and Technical Information of China (English)

    2006-01-01

    The study of silicon on insulator(SOI)MOSfield effect transistors(MOSFETs)has been ofgreat interest in recent years[1-2].As the di mensionsof SOI MOSFETs are aggressively scaled into thenanoscale regi me,the inversion carriers shift appar-ently away fromthe interface of Si O2/Si due to thequantumeffect.So it is quite necessary to take thequantumeffect into consideration in SOI MOSFETmodeling and si mulation.The Schr dinger-Poisson(SP)equations subject to an appropriate boundarycondition at the interface of ...

  3. Improvement on Frequency Performance of SOI SiGe HBT

    Institute of Scientific and Technical Information of China (English)

    DAI Guang-hao; WANG Sheng-rong; LI Wen-jie

    2006-01-01

    Based on the advantages of SOI technology,the frequency performance of SiGe HBT with SOI structure has been simulated. Compared with bulk SiGe HBT,the results show that the buried oxide layer(BOX) can reduce collector-base capacitance CCB with the maximum value 89.3%,substrate-base capacitance CSB with 94.6%,and the maximum oscillation frequency is improved by 2.7. The SOI structure improves the frequency performance of SiGe HBT,which is adaptable to high-speed and high power applications.

  4. Development of SOI pixel detector in Cracow

    CERN Document Server

    Bugiel, Szymon; Glab, Sebastian; Idzik, Marek; Moron, Jakub; Kapusta, Piotr Julian; Kucewicz, Wojciech; Turala, Michal

    2015-01-01

    This paper presents the design of a new monolithic Silicon-On-Insulator pixel sensor in $200~nm$ SOI CMOS technology. The main application of the proposed pixel detector is the spectroscopy, but it can also be used for the minimum ionizing particle (MIP) tracking in particle physics experiments. For this reason few different versions of pixel cells are developed: a source-follower based pixel for tracking, a low noise pixel with preamplifier for spectroscopy, and a self-triggering pixel for time and amplitude measurements. In addition the design of a Successive Approximation Register Analog-to-Digital Converter (SAR ADC) is also presented. A 10-bit SAR ADC is developed for spectroscopic measurements and a lower resolution 6-bit SAR ADC is integrated in the pixel matrix as a column ADC, for tracking applications.

  5. A Monolithic active pixel sensor for ionizing radiation using a 180nm HV-SOI process

    OpenAIRE

    Hemperek, Tomasz; Kishishita, Tetsuichi; Krüger, Hans; Wermes, Norbert

    2014-01-01

    An improved SOI-MAPS (Silicon On Insulator Monolithic Active Pixel Sensor) for ionizing radiation based on thick-film High Voltage SOI technology (HV-SOI) has been developed. Similar to existing Fully Depleted SOI-based (FD-SOI) MAPS, a buried silicon oxide inter-dielectric (BOX) layer is used to separate the CMOS electronics from the handle wafer which is used as a depleted charge collection layer. FD-SOI MAPS suffer from radiation damage such as transistor threshold voltage shifts due to ch...

  6. Bases en technique du vide

    CERN Document Server

    Rouviere, Nelly

    2017-01-01

    Cette seconde édition, 20 ans après la première, devrait continuer à aider les techniciens pour la réalisation de leur système de vide. La technologie du vide est utilisée, à présent, dans de nombreux domaines très différents les uns des autres et avec des matériels très fiables. Or, elle est souvent bien peu étudiée, de plus, c'est une discipline où le savoir-faire prend tout son sens. Malheureusement la transmission par des ingénieurs et techniciens expérimentés ne se fait plus ou trop rapidement. La technologie du vide fait appel à la physique, à la chimie, à la mécanique, à la métallurgie, au dessin industriel, à l'électronique, à la thermique, etc. Cette discipline demande donc de maîtriser des techniques de domaines très divers, et ce n'est pas chose facile. Chaque installation est en soi un cas particulier avec ses besoins, sa façon de traiter les matériaux et celle d'utiliser les matériels. Les systèmes de vide sont parfois copiés d'un laboratoire à un autre et le...

  7. Electronics and Sensor Study with the OKI SOI process

    CERN Document Server

    Arai, Yasuo

    2007-01-01

    While the SOI (Silicon-On-Insulator) device concept is very old, commercialization of the technology is relatively new and growing rapidly in high-speed processor and lowpower applications. Furthermore, features such as latch-up immunity, radiation hardness and high-temperature operation are very attractive in high energy and space applications. Once high-quality bonded SOI wafers became available in the late 90s, it opened up the possibility to get two different kinds of Si on a single wafer. This makes it possible to realize an ideal pixel detector; pairing a fully-depleted radiation sensor with CMOS circuitry in an industrial technology. In 2005 we started Si pixel R&D with OKI Electric Ind. Co., Ltd. which is the first market supplier of Fully-Depleted SOI products. We have developed processes for p+/n+ implants to the substrate and for making connections between the implants and circuits in the OKI 0.15μm FD-SOI CMOS process. We have preformed two Multi Project Wafer (MPW) runs using this SOI proces...

  8. SOI technology for power management in automotive and industrial applications

    Science.gov (United States)

    Stork, Johannes M. C.; Hosey, George P.

    2017-02-01

    Semiconductor on Insulator (SOI) technology offers an assortment of opportunities for chip manufacturers in the Power Management market. Recent advances in the automotive and industrial markets, along with emerging features, the increasing use of sensors, and the ever-expanding "Internet of Things" (IoT) are providing for continued growth in these markets while also driving more complex solutions. The potential benefits of SOI include the ability to place both high-voltage and low-voltage devices on a single chip, saving space and cost, simplifying designs and models, and improving performance, thereby cutting development costs and improving time to market. SOI also offers novel new approaches to long-standing technologies.

  9. Effect of Hydrogen Implantation on SIMOX SOI Materials

    Institute of Scientific and Technical Information of China (English)

    易万兵; 陈静; 陈猛; 王曦; 邹世昌

    2004-01-01

    Hydrogen ions were implanted into separation by implantation of oxygen (SIMOX) silicon-on-insulator (SOI)wafers near the oxygen-implantation-induced damage peak under different conditions of energy and dose. It was found that the implanted hydrogen ions not only accelerate the diffusion of oxygen atoms from the annealing ambience into the wafer but also cause an outward diffusion of oxygen atoms in the buried oxide (BOX) layer.Thus, greatly broadened buried oxygen-rich (BOR) layers were formed in our experiments, which are 18%-79%broader than the BOX layer of standard SIMOX SOI wafers under the same conditions of oxygen implantation.The mechanism was discussed. A potential low cost method to fabricate SIMOX SOI wafers is proposed.

  10. Compensation for TID Damage in SOI Pixel Devices

    CERN Document Server

    Tobita, Naoshi; Hara, Kazuhiko; Aoyagi, Wataru; Arai, Yasuo; Miyoshi, Toshinobu; Kurachi, Ikuo; Hatsui, Takaki; Kudo, Togo; Kobayashi, Kazuo

    2015-01-01

    We are investigating adaption of SOI pixel devices for future high energy physic(HEP) experiments. The pixel sensors are required to be operational in very severe radiation environment. Most challenging issue in the adoption is the TID (total ionizing dose) damage where holes trapped in oxide layers affect the operation of nearby transistors. We have introduced a second SOI layer - SOI2 beneath the BOX (Buried OXide) layer - in order to compensate for the TID effect by applying a negative voltage to this electrode to cancel the effect caused by accumulated positive holes. In this paper, the TID effects caused by Co gamma-ray irradiation are presented based on the transistor characteristics measurements. The irradiation was carried out in various biasing conditions to investigate hole accumulation dependence on the potential configurations. We also compare the data with samples irradiated with X-ray. Since we observed a fair agreement between the two irradiation datasets, the TID effects have been investigated...

  11. NEURAL NETWORK FOR THE QUANTUM CORRECTION OF NANOSCALE SOI MOSFETS

    Institute of Scientific and Technical Information of China (English)

    Li Zunchao; Jiang Yaolin; Zhang Lili

    2006-01-01

    The quantum effect of carrier distribution in nanoscale SOI MOSFETs is evident and must be taken into consideration in device modeling and simulation. In this paper, a backpropagation neural network was applied to predict the quantum density of carriers from the classical density, and the influence of the network structure on training speed and accuracy was studied. It was concluded that a carefully trained neural network with two hidden layers using the Levenberg-Marquardt learning algorithm could predict the carrier quantum density of SOI MOSFETs in very good agreement with Schrdinger Poisson equations.

  12. L’archive comme enjeu de présentation de soi : la mémoire du syndicat des ouvriers des savonneries à Naplouse, Cisjordanie Archives as a Self-Presentation Issue: the Memory of the Soap Factory Workers’ Union in Nablus, West Bank

    Directory of Open Access Journals (Sweden)

    Véronique Bontemps

    2012-05-01

    Full Text Available Cet article part de la « quête d’archives » à laquelle je me suis livrée dans le cadre d’une enquête sur le syndicat des ouvriers des savonneries à Naplouse. Dans un premier temps, il interroge le caractère insaisissable de la mémoire de ce syndicat, qui a laissé peu de traces matérielles de son existence. Je me penche ensuite sur la manière dont les documents écrits étaient utilisés par deux anciens ouvriers des savonneries, dans la reconstruction de la mémoire syndicale. Je montre que ces ouvriers mobilisaient conjointement deux régimes de légitimation de leur parole qui, loin de s’opposer, devaient se renforcer mutuellement : la possession de « documents authentiques » ne devait pas tant ajouter foi au contenu de leur discours, que fournir de l’autorité à leur parole. L’article interroge, in fine, la puissance symbolique accordée à l’écrit, et plus largement la matérialité dans le régime de légitimation du discours, en particulier en situation d’entretien.This article is based on the “quest for archives” I pursued in the context of a study on the soap factory workers’ union in Nablus. It begins by considering the elusive character of this union, which left few material traces of its existence. Next I examine how written documents were used by two former soap factory workers to construct the memory of the union. I show that these workers used two parallel systems to legitimise their words—systems that, far from clashing, reinforced each other: the possession of “authentic documents” should not so much make the discourse they contain more believable, but rather lend authority to their words. The article ultimately considers the power of discourse, particularly in an interview context.

  13. Du fratinoj

    Institute of Scientific and Technical Information of China (English)

    1996-01-01

    Vivis iam du fratinoj-Aje kaj Fatme.Iliapatrino estis duon-patrino por Fatme kaj in neamis.Foje i diris al sia edzo:-Faru kion ajn,sed mi ne plu volas vidiFatme.La sekvan tagon la patro forkondukis la

  14. Hybrid III-V/SOI resonant cavity enhanced photodetector

    DEFF Research Database (Denmark)

    Learkthanakhachon, Supannee; Taghizadeh, Alireza; Park, Gyeong Cheol;

    2016-01-01

    A hybrid III–V/SOI resonant-cavity-enhanced photodetector (RCE-PD) structure comprising a high-contrast grating (HCG) reflector, a hybrid grating (HG) reflector, and an air cavity between them, has been proposed and investigated. In the proposed structure, a light absorbing material is integrated...

  15. Hybrid III-V/SOI Resonant Cavity Photodetector

    DEFF Research Database (Denmark)

    Learkthanakhachon, Supannee; Taghizadeh, Alireza; Park, Gyeong Cheol;

    2016-01-01

    A hybrid III-V/SOI resonant cavity photo detector has been demonstrated, which comprises an InP grating reflectorand a Si grating reflector. It can selectively detects an incident light with 1.54-µm wavelength and TM polarization....

  16. SOI Digital Accelerometer Based on Pull-in Time Configuration

    NARCIS (Netherlands)

    Pakula, L.S.; Rajaraman, V.; French, P.J.

    2009-01-01

    The operation principle, design, fabrication and measurement results of a quasi digital accelerometer fabricated on a thin silicon-on-insulator (SOI) substrate is presented. The accelerometer features quasi-digital output, therefore eliminating the need for analogue signal conditioning. The

  17. Band Offset Measurements on Ultra-Thin (100) SOI MOSFETs

    NARCIS (Netherlands)

    van der Steen, J.P.J.; Hueting, Raymond Josephus Engelbart; Smit, G.D.J.; Hoang, T.; Holleman, J.; Schmitz, Jurriaan

    2007-01-01

    This work shows experimental evidence of structural quantum confinement showing up in the electrical device characteristics through a widening of the band gap. In this work, subthreshold currents in long channel ultra-thin SOI MOSFETs with (100) crystal orientation have been analyzed for various tem

  18. SOI based integrated on-chip photonic pressure sensor

    NARCIS (Netherlands)

    Chakkalakkal Abdulla, S.M.C.; Harmsma, P.J.; Nieuwland, R.A.; Pozo Torres, J.M.; Lemmen, M.H.J.; Sadeghian Marnani, H.; Berg, J.H. van den; Bodis, P.

    2012-01-01

    A compact, mass producible Silicon On Insulator (SOI) based pressure sensor consisting of a folded Micro Ring Resonator (MRR) on a circular diaphragm is successfully designed, fabricated and characterized [1-3]. The MRR is designed to be single mode for TE polarized light at 1550 nm. The folded MRR

  19. SOI waveguide based planar reflective grating demultiplexer for FTTH

    Science.gov (United States)

    Bidnyk, S.; Feng, D.; Balakrishnan, A.; Pearson, M.; Gao, M.; Liang, H.; Qian, W.; Kung, C.-C.; Fong, J.; Yin, J.; Asghari, M.

    2007-02-01

    Recent deployments of fiber-to-the-home (FTTH) represent the fastest growing sector of the telecommunication industry. The emergence of the silicon-on-insulator (SOI) photonics presents an opportunity to exploit the wide availability of silicon foundries and high-quality low-cost substrates for addressing the FTTH market. We have now demonstrated that a monolithically integrated FTTH demultiplexer can be built using the SOI platform. The SOI filter comprises a monolithically integrated planar reflective grating and a multi-stage Mach-Zehnder interferometer that were fabricated using a CMOS-compatible SOI process with the core thickness of 3.0 μm and optically insulating layer of silica with a thickness of 0.375 μm. The Mach-Zehnder interferometer was used to coarsely separate the 1310 nm channel from 1490 and 1550 nm channels. Subsequently, a planar reflective grating was used to demultiplex the 1490 and 1550 nm channels. The manufactured device showed the 1-dB bandwidth of 110 nm for the 1310 nm channel. For the 1490 nm and 1550 nm channels, the 1-dB bandwidth was measured to be 30 nm. The adjacent channel isolation between the 1490 nm and 1550 nm channels was better than 32 dB. The optical isolation between the 1310 nm and 1490 and 1550 nm channels was better than 45 dB. Applications of the planar reflective gratings in the FTTH networks are discussed.

  20. FinFET and UTBB for RF SOI communication systems

    Science.gov (United States)

    Raskin, Jean-Pierre

    2016-11-01

    Performance of RF integrated circuit (IC) is directly linked to the analog and high frequency characteristics of the transistors, the quality of the back-end of line process as well as the electromagnetic properties of the substrate. Thanks to the introduction of the trap-rich high-resistivity Silicon-on-Insulator (SOI) substrate on the market, the ICs requirements in term of linearity are fulfilled. Today partially depleted SOI MOSFET is the mainstream technology for RF SOI systems. Future generations of mobile communication systems will require transistors with better high frequency performance at lower power consumption. The advanced MOS transistors in competition are FinFET and Ultra Thin Body and Buried oxide (UTBB) SOI MOSFETs. Both devices have been intensively studied these last years. Most of the reported data concern their digital performance. In this paper, their analog/RF behavior is described and compared. Both show similar characteristics in terms of transconductance, Early voltage, voltage gain, self-heating issue but UTBB outperforms FinFET in terms of cutoff frequencies thanks to their relatively lower fringing parasitic capacitances.

  1. Modeling Quantum Transport in Nanoscale Vertical SOI nMOSFET

    Institute of Scientific and Technical Information of China (English)

    TONG Jian-nong; ZOU Xue-chang; SHEN Xu-bang

    2004-01-01

    The electron transports in micro-architecture semiconductor are simulated using vertical SOI nMOSFET with different models. Some details in transport can be presented by changing channel length, channel thickness and drain voltage. An interesting phenomenon similar to collimation effect in mesoscopic system is observed. This may suggest the quite intriguing possibility that scattering may open new channel in sufficiently narrow devices.

  2. 1×4 MMI Splitter Based on Rib SOI Waveguide

    Institute of Scientific and Technical Information of China (English)

    WEI Hongzhen; YU Jinzhong; LIU Zhongli; Wang Qirning; FANG Changshui

    2000-01-01

    In this paper, a 1×4 MMI splitter based on silicon-on-insulator (SOI) by effective index method and guide mode method is designed. The fabrication tolerance was analyzed. The device was fabricated and near-field output was obtained.

  3. SOI-Based 3dB MMI Splitter

    Institute of Scientific and Technical Information of China (English)

    魏红振; 余金中; 刘忠立; 张晓峰; 史伟; 房昌水

    2000-01-01

    A type of SOI-based MMI 3dB splitter has been demonstrated. The geometry was analyzed and designed by effective index method and guide mode method. The fabrication tolerance was analyzed too. The device was fabricated and near-field output was obtained. The device shows large width tolerance, low loss and low power uniformity.

  4. Research progresses of SOI optical waveguide devices and integrated optical switch matrix

    Institute of Scientific and Technical Information of China (English)

    YU Jinzhong; CHEN Shaowu; XIA Jinsong; WANG Zhangtao; FAN Zhongchao; LI Yanping; LIU Jingwei; YANG Di; CHEN Yuanyuan

    2005-01-01

    SOI (silicon-on-insulator) is a new material with a lot of important perform- ances such as large index difference, low transmission loss. Fabrication processes for SOI based optoelectronic devices are compatible with conventional IC processes. Having the potential of OEIC monolithic integration, SOI based optoelectronic devices have shown many good characteristics and become more and more attractive recently. In this paper, the recent progresses of SOI waveguide devices in our research group are presented. By highly effective numerical simulation, the single mode conditions for SOI rib waveguides with rectangular and trapezoidal cross-section were accurately investigated. Using both chemical anisotropic wet etching and plasma dry etching techniques, SOI single mode rib waveguide, MMI coupler, VOA (variable optical attenuator), 2×2 thermal-optical switch were successfully designed and fabricated. Based on these, 4×4 and 8×8 SOI optical waveguide integrated switch matrixes are demonstrated for the first time.

  5. Silicon on insulator self-aligned transistors

    Science.gov (United States)

    McCarthy, Anthony M.

    2003-11-18

    A method for fabricating thin-film single-crystal silicon-on-insulator (SOI) self-aligned transistors. Standard processing of silicon substrates is used to fabricate the transistors. Physical spaces, between the source and gate, and the drain and gate, introduced by etching the polysilicon gate material, are used to provide connecting implants (bridges) which allow the transistor to perform normally. After completion of the silicon substrate processing, the silicon wafer is bonded to an insulator (glass) substrate, and the silicon substrate is removed leaving the transistors on the insulator (glass) substrate. Transistors fabricated by this method may be utilized, for example, in flat panel displays, etc.

  6. modelisation du comportement hydrologique du bassin versant du ...

    African Journals Online (AJOL)

    LGE

    caractéristiques physiographiques du bassin dans le modèle permet la mise en évidence de son ... espèces les plus hygrophiles du secteur ombrophile. ...... [13] - F. HENDRICKX, Impact hydrologique d‟un changement climatique sur le bassin du ... LOPES, On the effect of uncertainty in spatial distribution of rainfall on ...

  7. Status and Trends in Advanced SOI Devices and Materials

    Institute of Scientific and Technical Information of China (English)

    2006-01-01

    A review of recently explored effects in advanced SOI devices and materials is given. The effects of key device parameters on the electrical and thermal floating body effects are shown for various device architectures.Recent advances in the understanding of the sensitivity of electron and hole transport to the tensile or compressive uniaxial and biaxial strains in thin film SOI are presented. The performance and physical mechanisms are also addressed in multi-gate Si, SiGe and Ge MOSFETs. New hot carrier phenomena are discussed. The effects of gate misalignment or underlap,as well as the use of the back gate for charge storage in double-gate nanodevices and of capacitorless DRAM are also outlined.

  8. Performance of the INTPIX6 SOI pixel detector

    Science.gov (United States)

    Arai, Y.; Bugiel, Sz.; Dasgupta, R.; Idzik, M.; Kapusta, P.; Kucewicz, W.; Miyoshi, T.; Turala, M.

    2017-01-01

    Characterization of the monolithic pixel detector INPTIX6, designed at KEK and fabricated in Lapis 0.2 μ m Fully-Depleted, Low-Leakage Silicon-On-Insulator (SOI) CMOS technology, was performed. The INTPIX6 comprises a large area of 1408 × 896 integrating type squared pixels of 12 micron pitch. In this work the performance and measurement results of the prototypes produced on lower resistivity Czochralski type (CZ-n) and high resistivity floating zone (FZ-n) sensor wafers are presented. Using 241Am radioactive source the noise of INTPIX6 was measured, showing the ENC (Equivalent Noise Charge) of about 70 e-. The resolution calculated from the FWHM of the Iron-55 X-ray peak was about 100 e-. The radiation hardness of the SOI pixel detector was also investigated. The CZ-n type INTPIX6 received a dose of 60 krad and its performance has been continuously monitored during the irradiation.

  9. A novel SOI-DTMOS structure from circuit performance considerations

    Institute of Scientific and Technical Information of China (English)

    宋文斌; 毕津顺; 韩郑生

    2009-01-01

    The performance of a partially depleted silicon-on-insulator (PDSOI) dynamic threshold MOSFET (DT-MOS) is degraded by the large body capacitance and body resistance. Increasing silicon film thickness can reduce the body resistance greatly, but the body capacitance also increases significantly at the same time. To solve this problem, a novel SOI DTMOSFET structure (drain/source-on-local-insulator structure) is proposed. From ISE simulation, the improvement in delay, obtained by optimizing p-n junction depth and silicon film thickness, is very significant. At the same time, we find that the drive current increases significantly as the thickness of the silicon film increases. Furthermore, only one additional mask is needed to form the local SIMOX, and other fabrication processes are fully compatible with conventional CMOS/SOI technology.

  10. Optical Filters Utilizing Ion Implanted Bragg Gratings in SOI Waveguides

    Directory of Open Access Journals (Sweden)

    M. P. Bulk

    2008-01-01

    Full Text Available The refractive index modulation associated with the implantation of oxygen or silicon into waveguides formed in silicon-on-insulator (SOI has been investigated to determine the feasibility of producing planar, implantation induced Bragg grating optical filters. A two-dimensional coupled mode theory-based simulation suggests that relatively short grating lengths, on the order of a thousand microns, can exhibit sufficient wavelength suppression, of >10 dB, using the implantation technique. Fabricated planar implanted slab-guided SOI waveguides demonstrated an extinction of −10 dB for TE modes and −6 dB for TM modes for the case of oxygen implantation. Extinctions of −5 dB and −2 dB have been demonstrated with silicon implantation.

  11. Compensation of radiation damages for SOI pixel detector via tunneling

    CERN Document Server

    Yamada, Miho; Kurachi, Ikuo

    2015-01-01

    We are developing monolithic pixel detectors based on SOI technology for high energy physics, X-ray applications and so on.To employ SOI pixel detector on such radiation environments, we have to solve effects of total ionization damages (TID) for transistors which are enclosed in oxide layer.The holes which are generated and trapped in the oxide layers after irradiation affect characteristics of near-by transistors due to its positive electric field.Annealing and radiation of ultraviolet are not realistic to remove trapped holes for a fabricated detector due to thermal resistance of components and difficulty of handling. We studied compensation of TID effects by tunneling using a high-voltage. For decrease of trapped holes, applied high-voltage to buried p-well which is under oxide layer to inject the electrons into the oxide layer.In this report, recent progress of this study is shown.

  12. Ultra compact triplexing filters based on SOI nanowire AWGs

    Science.gov (United States)

    Jiashun, Zhang; Junming, An; Lei, Zhao; Shijiao, Song; Liangliang, Wang; Jianguang, Li; Hongjie, Wang; Yuanda, Wu; Xiongwei, Hu

    2011-04-01

    An ultra compact triplexing filter was designed based on a silicon on insulator (SOI) nanowire arrayed waveguide grating (AWG) for fiber-to-the-home FTTH. The simulation results revealed that the design performed well in the sense of having a good triplexing function. The designed SOI nanowire AWGs were fabricated using ultraviolet lithography and induced coupler plasma etching. The experimental results showed that the crosstalk was less than -15 dB, and the 3 dB-bandwidth was 11.04 nm. The peak wavelength output from ports a, c, and b were 1455, 1510 and 1300 nm, respectively, which deviated from our original expectations. The deviation of the wavelength is mainly caused by 45 nm width deviation of the arrayed waveguides during the course of the fabrication process and partly caused by material dispersion.

  13. Ultra compact triplexing filters based on SOI nanowire AWGs

    Energy Technology Data Exchange (ETDEWEB)

    Zhang Jiashun; An Junming; Zhao Lei; Song Shijiao; Wang Liangliang; Li Jianguang; Wang Hongjie; Wu Yuanda; Hu Xiongwei, E-mail: junming@red.semi.ac.cn [State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China)

    2011-04-15

    An ultra compact triplexing filter was designed based on a silicon on insulator (SOI) nanowire arrayed waveguide grating (AWG) for fiber-to-the-home FTTH. The simulation results revealed that the design performed well in the sense of having a good triplexing function. The designed SOI nanowire AWGs were fabricated using ultraviolet lithography and induced coupler plasma etching. The experimental results showed that the crosstalk was less than -15 dB, and the 3 dB-bandwidth was 11.04 nm. The peak wavelength output from ports a, c, and b were 1455, 1510 and 1300 nm, respectively, which deviated from our original expectations. The deviation of the wavelength is mainly caused by 45 nm width deviation of the arrayed waveguides during the course of the fabrication process and partly caused by material dispersion. (semiconductor devices)

  14. SOI thermo-optic modulator with fast response

    Institute of Scientific and Technical Information of China (English)

    Xiaolong Wang(王小龙); Jingwei Liu(刘敬伟); Qingfeng Yan(严清峰); Shaowu Chen(陈绍武); Jinzhong Yu(余金中)

    2003-01-01

    Silicon-on-insulator (SOI) technology offers tremendous potential for integration of optoelectronic functionson a silicon wafer. In this letter, a 1 × 1 multimode interference (MMI) Mach-Zender interferometer(MZI) thermo-optic modulator fabricated by wet-etching method is demonstrated. The modulator has anextinction ratio of -11.0 dB, extra loss of -4.9 dB and power consumption of 420 mW. The response timeis less than 30μs.

  15. Double humps and radiation effects of SOI NMOSFET

    Institute of Scientific and Technical Information of China (English)

    Cui Jiangwei; Yu Xuefeng; Ren Diyuan; He Chengfa; Gao Bo; Li Ming; Lu Jian

    2011-01-01

    Radiation experiments have been carried out with a SOI NMOSFET. The behavior of double humps was studied under irradiation. The characterization of the hump was demonstrated. The results have shown that the shape of the hump changed along with the total dose and the reason for this was analyzed. In addition, the coupling effect of the back-gate transistor was more important for the main transistor than the parasitic transistor.

  16. Double humps and radiation effects of SOI NMOSFET

    Energy Technology Data Exchange (ETDEWEB)

    Cui Jiangwei; Yu Xuefeng; Ren Diyuan; He Chengfa; Gao Bo; Li Ming; Lu Jian, E-mail: cuijiangwei@sina.cn [Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Urumqi 830011 (China)

    2011-06-15

    Radiation experiments have been carried out with a SOI NMOSFET. The behavior of double humps was studied under irradiation. The characterization of the hump was demonstrated. The results have shown that the shape of the hump changed along with the total dose and the reason for this was analyzed. In addition, the coupling effect of the back-gate transistor was more important for the main transistor than the parasitic transistor. (semiconductor devices)

  17. SEMICONDUCTOR DEVICES: A new integrated SOI power device based on self-isolation technology

    Science.gov (United States)

    Huanmei, Gao; Xiaorong, Luo; Wei, Zhang; Hao, Deng; Tianfei, Lei

    2010-08-01

    A new SOI LDMOS structure with buried n-islands (BNIs) on the top interface of the buried oxide (BOX) is presented in a p-SOI high voltage integrated circuits (p-SOI HVICs), which exhibits good self-isolation performance between the power device and low-voltage control circuits. Furthermore, both the donor ions of BNIs and holes collected between depleted n-islands not only enhance the electric field in BOX from 32 to 113 V/μm, but also modulate the lateral electric field distribution, resulting in an improvement of the breakdown voltage of the BNI SOI LDMOS. A 673 V BNI SOI LDMOS is experimentally obtained and presents an excellent self-isolation performance in a p-SOI HVIC.

  18. Multi-channel micro neural probe fabricated with SOI

    Institute of Scientific and Technical Information of China (English)

    2009-01-01

    Silicon-on-insulator(SOI) substrate is widely used in micro-electro-mechanical systems(MEMS).With the buried oxide layer of SOI acting as an etching stop,silicon based micro neural probe can be fabri-cated with improved uniformity and manufacturability.A seven-record-site neural probe was formed by inductive-coupled plasma(ICP) dry etching of an SOI substrate.The thickness of the probe is 15 μm.The shaft of the probe has dimensions of 3 mm×100 μm×15 μm with typical area of the record site of 78.5 μm2.The impedance of the record site was measured in-vitro.The typical impedance characteris-tics of the record sites are around 2 MΩ at 1 kHz.The performance of the neural probe in-vivo was tested on anesthetic rat.The recorded neural spike was typically around 140 μV.Spike from individual site could exceed 700 μV.The average signal noise ratio was 7 or more.

  19. SOI DEVICE SIMULATION OF AN AREA ‎EFFICIENT BODY CONTACT ‎

    Directory of Open Access Journals (Sweden)

    Arash Daghighi

    2007-06-01

    Full Text Available We have used three-dimensional simulation to investigate application of a new body contact to SOI devices. Performance characteristics of the new body contact on high-voltage SOI devices were studied. Our comparative investigation showed increased current drive, improved cutoff frequency, reduced on-resistance while attaining satisfactory breakdown voltage. The new body contact is applicable to both high and low voltage SOI MOSFETs.

  20. Impact of Device Architecture on Performance and Reliability of Deep Submicron SOI MOSFETs (invited paper)

    Institute of Scientific and Technical Information of China (English)

    2000-01-01

    The main electrical properties of advanced Silicon-On-Insulator MOSFETs are addressed. The subthreshold and high field operations are analysed as a function of device architecture. The special SOI parasitic phenomena, such as the floating body potential and temperature, are critically reviewed. The main limitations of submicron MOSFET are comparatively evaluated for various SOI structures. Short channel and hot carrier effects as well as the reliability of the SOI technology are investigated for gate length down to sub-0. 1 micron.

  1. A fully differential OTA with dynamic offset cancellation in 28nm FD-SOI process

    Science.gov (United States)

    Jaworski, Zbigniew

    2016-12-01

    This papers presents a classic fully differential operational transconductance amplifier (FDOTA) implemented in industrial 28 nm FD-SOI (Fully-Depleted SOI) technology. A novel approach to minimized the FDOTA offset voltage is proposed. The solution employs the unique feature of FD-SOI technology - back-gate biasing - combined with modern compensation methodology. The proposed method results in considerable design overhead. However, this offset cancellation approach is very effective and allows to improve FDOTA performance when classic techniques reach their limits.

  2. Alignment validation

    Energy Technology Data Exchange (ETDEWEB)

    ALICE; ATLAS; CMS; LHCb; Golling, Tobias

    2008-09-06

    The four experiments, ALICE, ATLAS, CMS and LHCb are currently under constructionat CERN. They will study the products of proton-proton collisions at the Large Hadron Collider. All experiments are equipped with sophisticated tracking systems, unprecedented in size and complexity. Full exploitation of both the inner detector andthe muon system requires an accurate alignment of all detector elements. Alignmentinformation is deduced from dedicated hardware alignment systems and the reconstruction of charged particles. However, the system is degenerate which means the data is insufficient to constrain all alignment degrees of freedom, so the techniques are prone to converging on wrong geometries. This deficiency necessitates validation and monitoring of the alignment. An exhaustive discussion of means to validate is subject to this document, including examples and plans from all four LHC experiments, as well as other high energy experiments.

  3. Investigation of veritcal graded channel doping in nanoscale fully-depleted SOI-MOSFET

    Science.gov (United States)

    Ramezani, Zeinab; Orouji, Ali A.

    2016-10-01

    For achieving reliable transistor, we investigate an amended channel doping (ACD) engineering which improves the electrical and thermal performances of fully-depleted silicon-on-insulator (SOI) MOSFET. We have called the proposed structure with the amended channel doping engineering as ACD-SOI structure and compared it with a conventional fully-depleted SOI MOSFET (C-SOI) with uniform doping distribution using 2-D ATLAS simulator. The amended channel doping is a vertical graded doping that is distributed from the surface of structure with high doping density to the bottom of channel, near the buried oxide, with low doping density. Short channel effects (SCEs) and leakage current suppress due to high barrier height near the source region and electric field modification in the ACD-SOI in comparison with the C-SOI structure. Furthermore, by lower electric field and electron temperature near the drain region that is the place of hot carrier generation, we except the improvement of reliability and gate induced drain lowering (GIDL) in the proposed structure. Undesirable Self heating effect (SHE) that become a critical challenge for SOI MOSFETs is alleviated in the ACD-SOI structure because of utilizing low doping density near the buried oxide. Thus, refer to accessible results, the ACD-SOI structure with graded distribution in vertical direction is a reliable device especially in low power and high temperature applications.

  4. Crosstalk Enhancement in 32 nm FD SOI MOSFET using HR Substrate and Multilayer BOX

    Directory of Open Access Journals (Sweden)

    Parisa Tavanazadeh

    2011-06-01

    Full Text Available In this paper, the crosstalk in 32 nm UTB SOI MOSFET is examined by using a new structure, a high resistivity substrate, and a multilayer BOX (SiO2-Diamond. The electrical and thermal characteristics of the conventional SOI and a multilayer BOX SOI are compared, and it is concluded that parasitic capacitances and crosstalk are improved by incorporating multilayer BOX to a HR Substrate. In a conventional HR FD SOI, crosstalk is approximately -121dB, while by incorporating multilayer BOX substrate and increasing the thickness of the Diamond to 100nm, crosstalk can be reduced by 20%.

  5. New linear sweep technique to measure generation lifetimes in thin-film SOI MOSFET's

    Science.gov (United States)

    Venkatesan, S.; Pierret, R. F.; Neudeck, G. W.

    1994-04-01

    A new linear sweep technique to measure generation lifetimes (tau(sub g)) in silicon-on-insulator (SOI) material is presented. A detailed analytic formulation is applied to fully-depleted and partially-depleted SOI films and used to simulate the behavior of the SOI devices under linear sweep conditions. A novel algorithm accurately determines the effective generation width in fully depleted SOI films. The measurement technique is experimentally verified by applying the algorithm to fully depleted SIMOX P-channel MOSFET's where observed lifetimes ranged from 0.3 mu s to 2.4 mu s.

  6. Characteristics of non-irradiated and irradiated double SOI integration type pixel sensor

    Science.gov (United States)

    Asano, M.; Sekigawa, D.; Hara, K.; Aoyagi, W.; Honda, S.; Tobita, N.; Arai, Y.; Miyoshi, T.; Kurachi, I.; Tsuboyama, T.; Yamada, M.

    2016-09-01

    We are developing monolithic pixel sensors based on a 0.2 μm fully depleted silicon-on-insulator (FD-SOI) technology for high-energy physics experiment applications. With this SOI technology, the wafer resistivities for the electronics and sensor parts can be chosen separately. Therefore, a device with full depletion and fast charge collection is realized. The total ionizing dose (TID) effect is the major challenge for application in hard radiation environments. To compensate for TID damage, we introduced a double SOI structure that implements an additional middle silicon layer (SOI2 layer). Applying a negative voltage to the SOI2 layer should compensate for the effects induced by holes trapped in the buried oxide layers. We studied the recovery from TID damage induced by 60Co γ and other characteristics of the integration-type double SOI sensor INTPIXh2. When the double SOI sensor was irradiated to 100 kGy, it showed a response to the infrared laser similar to that of a non-irradiated sensor when we applied a negative voltage to the SOI2 layer. Thus, we concluded that the double SOI sensor is very effective at sufficiently enhancing the radiation hardness for application in experiments with harsh radiation environments, such as at Belle II or ILC.

  7. Characteristics of non-irradiated and irradiated double SOI integration type pixel sensor

    Energy Technology Data Exchange (ETDEWEB)

    Asano, M.; Sekigawa, D. [Institute of Pure and Applied Sciences, University of Tsukuba, Tsukuba, Ibaraki 305-8751 (Japan); Hara, K., E-mail: hara@hep.px.tsukuba.ac.jp [Institute of Pure and Applied Sciences, University of Tsukuba, Tsukuba, Ibaraki 305-8751 (Japan); Center for Integrated Research in Fundamental Science and Engineering, University of Tsukuba, Tsukuba, Ibaraki 305-8571 (Japan); Aoyagi, W.; Honda, S.; Tobita, N. [Institute of Pure and Applied Sciences, University of Tsukuba, Tsukuba, Ibaraki 305-8751 (Japan); Arai, Y.; Miyoshi, T.; Kurachi, I.; Tsuboyama, T.; Yamada, M. [Institute of Particle and Nuclear Study, KEK, Oho 1-1, Tsukuba, Ibaraki 305-0801 (Japan)

    2016-09-21

    We are developing monolithic pixel sensors based on a 0.2 μm fully depleted silicon-on-insulator (FD-SOI) technology for high-energy physics experiment applications. With this SOI technology, the wafer resistivities for the electronics and sensor parts can be chosen separately. Therefore, a device with full depletion and fast charge collection is realized. The total ionizing dose (TID) effect is the major challenge for application in hard radiation environments. To compensate for TID damage, we introduced a double SOI structure that implements an additional middle silicon layer (SOI2 layer). Applying a negative voltage to the SOI2 layer should compensate for the effects induced by holes trapped in the buried oxide layers. We studied the recovery from TID damage induced by {sup 60}Co γ and other characteristics of the integration-type double SOI sensor INTPIXh2. When the double SOI sensor was irradiated to 100 kGy, it showed a response to the infrared laser similar to that of a non-irradiated sensor when we applied a negative voltage to the SOI2 layer. Thus, we concluded that the double SOI sensor is very effective at sufficiently enhancing the radiation hardness for application in experiments with harsh radiation environments, such as at Belle II or ILC.

  8. La petite fille de la surface comme figure de la dissolution du soi

    Directory of Open Access Journals (Sweden)

    Öznur Karakaş

    2015-12-01

    Full Text Available This article follows the traces of the jeune fille that can be found throughout Deleuze’s Logic of Sense, so as to pave the way for further reflection on possible links between feminism(s and Deleuzian thought. By analysing the key concepts of Logic of Sense, it is shown that Deleuze conceptualizes the jeune fille as the figure of the dissolution of the self, carried out through a close reading of Leibniz, Nietzsche and psychoanalysis. The jeune fille/the feminine is accordingly construed as an aleatory point at the intersection of possible world(s. This in turn resonates with Luce Irigaray’s project with respect to sexual difference, in which she calls upon feminists to create conceptions of the feminine as pure difference, not captured by the name of the Father or the patriarchal symbolic system.

  9. La maquette digitale du tunnel du LEP

    CERN Document Server

    Brouns, G

    2000-01-01

    Pour l'installation du LHC et son équipement périphérique (ligne cryogénique, câbles, tuyauterie, etc.) dans le tunnel du LEP, une maquette digitale CAO doit être faite. Après un rappel de la définition théorique du tunnel du LEP, cette LHC project Note décrit comment sont utilisées et intégrées d'anciennes et de nouvelles mesures du tunnel pour arriver à un ensemble de données qui permettent de construire la maquette digitale (CAO) du tunnel du LHC. Ensuite, les résultats sont comparés à leur valeur théorique d'une part, et aux anciennes valeurs disponibles d'autre part.

  10. CONCEPTUALISATION ONTOLOGIQUE DE LA REPRÉSENTATION DU COMBAT CONCEPTUALISATION ONTOLOGIQUE DE LA REPRÉSENTATION DU COMBAT

    Directory of Open Access Journals (Sweden)

    Sylvain Rheault

    2012-10-01

    Full Text Available En adoptant une perspective existentielle, on peut tenter d'expliquer la représentation du combat au moyen de concepts comme les positions de SOI et de L'AUTRE ainsi que les statuts de l'ÊTRE et de la CHOSE, qui, une fois combinés, définissent des domaines ontologiques. Le combat devient alors, conceptuellement, l'action de forcer une conscience à passer d'un domaine à un autre. On observe qu'en modifiant l'intensité des positions (polarisation, des statuts (hiérarchisation et des actions (dosage, on peut expliquer les variations possibles des représentations du combat. Il restera à valider la pertinence de ces concepts en multipliant les analyses.En adoptant une perspective existentielle, on peut tenter d'expliquer la représentation du combat au moyen de concepts comme les positions de SOI et de L'AUTRE ainsi que les statuts de l'ÊTRE et de la CHOSE, qui, une fois combinés, définissent des domaines ontologiques. Le combat devient alors, conceptuellement, l'action de forcer une conscience à passer d'un domaine à un autre. On observe qu'en modifiant l'intensité des positions (polarisation, des statuts (hiérarchisation et des actions (dosage, on peut expliquer les variations possibles des représentations du combat. Il restera à valider la pertinence de ces concepts en multipliant les analyses.

  11. Le tourisme gay : aller ailleurs pour être soi-même ?

    Directory of Open Access Journals (Sweden)

    Emmanuel Jaurand

    2010-02-01

    Full Text Available L’orientation dominante des études sur le tourisme, longtemps marquées par l’importance de la dimension économique et par un désintérêt pour les questions touchant au corps, au sexe ou au genre, explique le silence autour du tourisme gay (qui n’est pas le tourisme des gays jusqu’aux années 1990. Pourtant, ce tourisme identitaire existe depuis longtemps et sa visibilité se développe, surtout dans les pays développés occidentaux. La métaphore du voyage et la recherche du paradis (sexuel perdu sont au cœur de l’identité homosexuelle depuis le 19 e siècle. Le tourisme gay se caractérise par des structures (tour-opérateurs, hébergements, croisières… et des destinations spécifiques. Pour les gays il s’agit, dans l’espace-temps des vacances, propice au relâchement et à la recréation de soi, de fuir un monde structuré par le système hétérosexiste et de rejoindre les autres (gays. La recherche de la rencontre du semblable et la sexualisation assumée du tourisme gay, à travers la libération et la dénudation des corps, participent d’une véritable quête pour valider son identité de gay. Elles font que les destinations préférées par les gays sont les stations balnéaires et les grandes villes : elles sont en effet dotées d’espaces publics, d’équipements commerciaux et de formes d’hébergement fermées favorables aux interactions et à la réalisation d’une éphémère « communauté gay ». The mainstream orientation of tourism studies, focused on the sole economic dimension for a long time, without any interest for questions about the body, sex or gender, explains the silence surrounding gay tourism (which is not the tourism of gay men since the 1990s. However, this identity tourism has existed for a long time and its visibility is growing, especially in Western developed countries. The metaphor of the journey and the search for a (sexual paradise lost have been at the core of the

  12. SOI CMOS Imager with Suppression of Cross-Talk

    Science.gov (United States)

    Pain, Bedabrata; Zheng, Xingyu; Cunningham, Thomas J.; Seshadri, Suresh; Sun, Chao

    2009-01-01

    A monolithic silicon-on-insulator (SOI) complementary metal oxide/semiconductor (CMOS) image-detecting integrated circuit of the active-pixel-sensor type, now undergoing development, is designed to operate at visible and near-infrared wavelengths and to offer a combination of high quantum efficiency and low diffusion and capacitive cross-talk among pixels. The imager is designed to be especially suitable for astronomical and astrophysical applications. The imager design could also readily be adapted to general scientific, biological, medical, and spectroscopic applications. One of the conditions needed to ensure both high quantum efficiency and low diffusion cross-talk is a relatively high reverse bias potential (between about 20 and about 50 V) on the photodiode in each pixel. Heretofore, a major obstacle to realization of this condition in a monolithic integrated circuit has been posed by the fact that the required high reverse bias on the photodiode is incompatible with metal oxide/semiconductor field-effect transistors (MOSFETs) in the CMOS pixel readout circuitry. In the imager now being developed, the SOI structure is utilized to overcome this obstacle: The handle wafer is retained and the photodiode is formed in the handle wafer. The MOSFETs are formed on the SOI layer, which is separated from the handle wafer by a buried oxide layer. The electrical isolation provided by the buried oxide layer makes it possible to bias the MOSFETs at CMOS-compatible potentials (between 0 and 3 V), while biasing the photodiode at the required higher potential, and enables independent optimization of the sensory and readout portions of the imager.

  13. Using SST, PDO and SOI for Streamflow Reconstruction

    Science.gov (United States)

    Bukhary, S. S.; Kalra, A.; Ahmad, S.

    2015-12-01

    Recurring droughts in southwestern U.S. particularly California, have strained the existing water reserves of the region. Frequency, severity and duration of these recurring drought events may not be captured by the available instrumental records. Thus streamflow reconstruction becomes imperative to identify the historic hydroclimatic extremes of a region and assists in developing better water management strategies, vital for sustainability of water reserves. Tree ring chronologies (TRC) are conventionally used to reconstruct streamflows, since tree rings are representative of climatic information. Studies have shown that sea surface temperature (SST) and climate indices of southern oscillation index (SOI) and pacific decadal oscillation (PDO) influence U.S. streamflow volumes. The purpose of this study was to improve the traditional reconstruction methodology by incorporating the oceanic-atmospheric variables of PDO, SOI, and Pacific Ocean SST, alongwith TRC as predictors in a step-wise linear regression model. The methodology of singular value decomposition was used to identify teleconnected regions of streamflow and SST. The approach was tested on eleven gage stations in Sacramento River Basin (SRB) and San Joaquin River Basin (JRB). The reconstructions were successfully generated from 1800-1980, having an overlap period of 1932-1980. Improved results were exhibited when using the predictor variable of SST along with TRC (calibration r2=0.6-0.91) compared to when using TRC in combination with SOI and PDO (calibration r2=0.51-0.78) or when using TRC by itself (calibration r2=0.51-0.86). For future work, this approach can be replicated for other watersheds by using the oceanic-atmospheric climate variables influencing that region.

  14. Asymmetrically doped stacked channel strained SOI FinFET

    Science.gov (United States)

    Dubey, Shashank; Kondekar, Pravin N.

    2017-02-01

    Strained SOI (SSOI) n-channel trigate FinFET is designed with asymmetrically doped stacked channels along the fin height. The OFF current is reduced with respect to lightly doped uniform SSOI FinFET because of band gap modification, originated between highly doped uniaxial strained and lightly doped Si fin. Through TCAD simulation it is observed that for the stacked devices the OFF current is reduced by more than 47%. The performances are also compared with highly doped uniform SSOI FinFETs and the results indicated that these devices have lesser random dopant variation at a moderate cost of ON and OFF current.

  15. Thin NbN film structures on SOI for SNSPD

    Energy Technology Data Exchange (ETDEWEB)

    Il' in, Konstantin; Kurz, Stephan; Henrich, Dagmar; Hofherr, Matthias; Siegel, Michael [IMS, KIT, Karlsruhe (Germany); Semenov, Alexei; Huebers, Heinz-Wilhelm [DLR, Berlin (Germany)

    2012-07-01

    Superconducting Nanowire Single-Photon Detectors (SNSPD) made from ultra-thin NbN films on sapphire demonstrate almost 100% intrinsic detection efficiency (DE). However the system DE values is less than 10% mostly limited by a very low absorptance of NbN films thinner than 5 nm. Integration of SNSPD in Si photonic circuit is a promising way to overcome this problem. We present results on optimization of technology of thin NbN film nanostructures on SOI (Silicon on Insulator) substrate used in Si photonics technology. Superconducting and normal state properties of these structures important for SNSPD development are presented and discussed.

  16. Beyond Alignment

    DEFF Research Database (Denmark)

    Beyond Alignment: Applying Systems Thinking to Architecting Enterprises is a comprehensive reader about how enterprises can apply systems thinking in their enterprise architecture practice, for business transformation and for strategic execution. The book's contributors find that systems thinking...... is a valuable way of thinking about the viable enterprise and how to architect it....

  17. SOI CMOS FPGA电路设计技术研究%Study on Design Technology for FPGA Based on SOI CMOS Process

    Institute of Scientific and Technical Information of China (English)

    郭良权

    2007-01-01

    介绍了基于SOI CMOS工艺平台的FPGA电路的设计;结合FPGA电路自身的特点,对电路从标准体硅CMOS工艺迁移到SOI CMOS工艺过程中,在逻辑、版图以及可靠性等方面所作的分析和实践进行了总结.

  18. Modeling and Simulation of Special Shaped SOI Materials for the Nanodevices Implementation

    Directory of Open Access Journals (Sweden)

    Cristian Ravariu

    2011-01-01

    Full Text Available In the industrial chain of the nanomaterials for electronic devices, a main stage is represented by the wafer characterization. This paper is starting from a standard SOI wafer with 200 nm film thickness and is proposing two directions for the SOI materials miniaturization, indexing the static characteristics by simulation. The first SOI nanomaterial is a sub-10 nm Si-film with a rectangular shape. The influence of the buried interface fixed charges has to be approached by the distribution theory. The second proposal studies the influence of the vacuum cavity in a “U” shaped SOI nanofilm. In all cases, with rectangular or “U” shape film, the simulations reveal transfer characteristics with a maximum and output characteristics with a minimum for sub-10 nm thickness of the SOI film.

  19. 0.5μm Partially Depleted CMOS/SOI Device and Circuit%0.5μm SOI CMOS器件和电路

    Institute of Scientific and Technical Information of China (English)

    刘新宇; 孙海峰; 海朝和; 吴德馨

    2001-01-01

    研究了0.5μm SOI CMOS器件和电路,开发出成套的0.5μm SOI CMOS工艺.经过工艺投片,获得了性能良好的器件和电路,其中当工作电压为3V时,0.5μm 101级环振单级延迟为42ps.同时,对部分耗尽SOI器件特性,如“浮体”效应、“kink”效应和反常亚阈值特性进行了讨论.%The partially depleted CMOS/SOI device and circuit with channel length of 0.5μm have been studied,and the Complete 0.5μm CMOS/SOI technology been developed as well.Well-behaved devices and circuits are obtained,with the per-stage propagation delay of 101-stage 0.5μm CMOS/SOI ring oscillator being 42ps under 3V supply voltage.Some characteristics of the partially depleted CMOS/SOI device are also discussed,such as “float-body” effect,“kink” effect,and anomalous subthreshold characteristics,etc.

  20. Le narrateur implicite dans la bande dessinée. La transformation du style indirect libre dans deux adaptations en bandes dessinées de Madame Bovary

    Directory of Open Access Journals (Sweden)

    Kai Mikkonen

    2010-12-01

    Full Text Available

    align="left">Abstract (E: This paper investigates the question of narrative agency in comics by way of analyzing the medium-specific features of speech and thought representation in two vastly different graphic adaptations of Gustave Flaubert’s novel Madame Bovary: Posy Simmonds’s Gemma Bovery (1999 and Daniel Bardet’s and Michel Janvier’s Madame Bovary (2008. The focus of the discussion is on the transformations that the literary style of free indirect discourse, and the accompanying techniques of perspective (or focalization, have undergone in the adaptations, including both limitations in their use and creative reformulations. The analysis of such transformations enables us to pose the question of the so-called implicit narrator, a highly problematic notion in visual narratives, in a new transmedial context. This involves the thorny question to whom attribute textual elements that imply perception or voice when the narrative has no identifiable narrator figure, or when a narrator figure (or character-narrator is clearly not responsible for showing the images.

    align="left">Résumé (F: Cet article pose la question de « l'agent de la narration » dans la bande dessinée. « L’agent de la narration » est défini ici comme cette personne ou cette chose qui est perçue comme le responsable de la présentation narrative, y compris dans les fonctions du choix, de l'organisation, du commentaire et de la distribution de l’histoire. Plus précisément, cet article se concentre sur les transformation du procédé littéraire du style indirect libre dans le contexte de l’adaptation entre le roman et la bande dessinée, concernant une version « libre », Gemma Bovery, par Posy Simmonds et une version « fidèle », Madame Bovary, par Daniel Bardet et Michel Janvier de chef d’œuvre de Gustave

  1. A graphene spin diode based on Rashba SOI

    Energy Technology Data Exchange (ETDEWEB)

    Mohammadpour, Hakimeh, E-mail: mhmdpour@azaruniv.ac.ir

    2015-07-01

    In this paper a graphene-based two-terminal electronic device is modeled for application in spintronics. It is based on a gapped armchair graphene nanoribbon (GNR). The electron transport is considered through a scattering or channel region which is sandwiched between two lateral semi-infinite ferromagnetic leads. The two ferromagnetic leads, being half-metallic, are supposed to be in either parallel or anti-parallel magnetization. Meanwhile, the central channel region is a normal layer under the influence of the Rashba SOI, induced e.g., by the substrate. The device operation is based on modulating the (spin-) current by tuning the strength of the RSOI. The resultant current, being spin-polarized, is controlled by the RSOI in mutual interplay with the channel length. Inverting alternating bias voltage to a fully rectified spin-current is the main achievement of this paper. - Highlights: • Graphene-based electronic device is modeled with ferromagnetic leads. • The device operation is based on modulating the (spin-) current by Rashba SOI. • Inverting alternating bias voltage to rectified spin-current is the main achievement.

  2. Reducing the temperature sensitivity of SOI waveguide-based biosensors

    Science.gov (United States)

    Gylfason, Kristinn B.; Mola Romero, Albert; Sohlström, Hans

    2012-06-01

    Label-free photonic biosensors fabricated on silicon-on-insulator (SOI) can provide compact size, high evanescent field strength at the silicon waveguide surface, and volume fabrication potential. However, due to the large thermo optic coefficient of water-based biosamples, the sensors are temperature-sensitive. Consequently, active temperature control is usually used. However, for low cost applications, active temperature control is often not feasible. Here, we use the opposite polarity of the thermo-optic coefficients of silicon and water to demonstrate a photonic slot waveguide with a distribution of power between sample and silicon that aims to give athermal operation in water. Based on simulations, we made three waveguide designs close to the athermal point, and asymmetric integrated Mach- Zehnder interferometers for their characterization. The devices were fabricated on SOI with a 220 nm device layer and 2 μm buried oxide, by electron beam lithography of hydrogen silsesquioxane (HSQ) resist, and etching in a Cl2/HBr/O2/He plasma. With Cargile 50350 fused silica matching oil as top cladding, the group index of the three guides varies from 1.9 to 2.8 at 1550 nm. The temperature sensitivity of the devices varied from -70 to -160 pm/K under the same conditions. A temperature sensitivity of -2 pm/K is projected with water as top cladding.

  3. Blog : un journal intime comme mémoire de soi

    Directory of Open Access Journals (Sweden)

    Nolwenn Hénaff

    2011-08-01

    Full Text Available Tenir un journal est devenu, pour un individu, une manière possible de vivre, ou d’accompagner un moment de sa vie (Lejeune, 2006. Les usages sont donc multiples : construction d’une identité narrative, fixation du temps, libération du moi, introspection, outil de contrôle, de soutien, méthode d’organisation de la pensée, plaisir d’écrire. Si l’écriture papier reste la forme la plus courante du récit biographique, d’autres supports médiatiques comme la télévision ou la radio sont venus offrir de nouveaux terrains d’expérimentation de ces récits de soi. Plus récemment, l’avènement d’Internet et de ses outils simplifiés de publication ont fait émerger des formes biographiques innovantes. Pourtant, qu’il s’agisse de traverser une crise, de garder la mémoire d’une expérience forte, ou, plus ordinairement, de relater ses vacances et ses voyages, le journal se positionne avant tout, et résolument, comme un espace de liberté : on écrit quand on veut, comme on veut. Le « Souci de soi » comme dirait Foucault, l’espace dominé par les sensations, et la temporalité marquée par la notion d’instants, de moments ayant une connotation expressément personnelle sont autant d’indices révélant la pratique de l’écriture intime en ligne. Le blog apparaît à des moments de vie et accompagne souvent des tournants biographiques (ruptures, questionnement mais aussi nouveaux apprentissages, nouvelles rencontres, etc.. Nous proposons dans cet article d’analyser le blog en tant que support de mémoire personnelle et d’étudier à travers des exemples concrets les stratégies développées par les blogueurs pour se créer via ce dispositif communicationnel innovant un « espace de conserverie de soi » en ligne.Keeping a journal has become a way of live, or to moment a moment in one’s life (Lejeune, 2006. It has multiple uses: construction of a narrative identity, marking time, liberating the

  4. A Monolithic active pixel sensor for ionizing radiation using a 180nm HV-SOI process

    CERN Document Server

    Hemperek, Tomasz; Krüger, Hans; Wermes, Norbert

    2014-01-01

    An improved SOI-MAPS (Silicon On Insulator Monolithic Active Pixel Sensor) for ionizing radiation based on Partially Depleted High Voltage SOI technology (PD-SOI) has been developed. Similar to existing Fully Depleted SOI-based (FD-SOI) MAPS, a buried silicon oxide inter-dielectric (BOX) layer is used to separate the CMOS electronics from the handle wafer which is used as a depleted charge collection layer while FD-SOI MAPS suffer from radiation damage such as transistor threshold voltage shifts due to charge traps in the oxide layers and charge states created at the silicon oxide boundaries (back gate effect). The XFAB 180-nm HV-SOI technology offers an additional isolation by deep non-depleted implant between the BOX layer and the active circuitry witch mitigates this problem. Therefore we see in this technology a high potential to implement radiation-tolerant MAPS with fast charge collection property. The design and measurement results from a first prototype are presented including charge collection in neu...

  5. A Monolithic Active Pixel Sensor for ionizing radiation using a 180 nm HV-SOI process

    Science.gov (United States)

    Hemperek, Tomasz; Kishishita, Tetsuichi; Krüger, Hans; Wermes, Norbert

    2015-10-01

    An improved SOI-MAPS (Silicon On Insulator Monolithic Active Pixel Sensor) for ionizing radiation based on thick-film High Voltage SOI technology (HV-SOI) has been developed. Similar to existing Fully Depleted SOI-based (FD-SOI) MAPS, a buried silicon oxide inter-dielectric (BOX) layer is used to separate the CMOS electronics from the handle wafer which is used as a depleted charge collection layer. FD-SOI MAPS suffers from radiation damage such as transistor threshold voltage shifts due to charge traps in the oxide layers and charge states created at the silicon oxide boundaries (back gate effect). The X-FAB 180-nm HV-SOI technology offers an additional isolation by deep non-depleted implant between the BOX layer and the active circuitry which mitigates this problem. Therefore we see in this technology a high potential to implement radiation-tolerant MAPS with fast charge collection property. The design and measurement results from a first prototype are presented including charge collection in neutron irradiated samples.

  6. Analysis of Kink Reduction in SOI MOSFET Using Selective Back Oxide Structure

    OpenAIRE

    Narayanan, M.; H. Al-Nashash; Baquer Mazhari; Dipankar Pal; Mahesh Chandra

    2012-01-01

    This paper presents a complete analysis of the kink effect in SOI MOSFET and proposes a method for eliminating kink effect observed in the current-voltage output characteristics of a partially depleted SOI MOSFET device. In this method, back oxide for the device is introduced at selected regions below the source and drain and not continuously as in an SOI device giving rise to what is termed a “SELBOX” structure. Selective back oxide structure with different gap lengths and thicknesses was st...

  7. L’estime de soi : un cas particulier d’estime sociale ?

    OpenAIRE

    Santarelli, Matteo

    2016-01-01

    Un des traits plus originaux de la théorie intersubjective de la reconnaissance d’Axel Honneth, consiste dans la façon dont elle discute la relation entre estime sociale et estime de soi. En particulier, Honneth présente l’estime de soi comme un reflet de l’estime sociale au niveau individuel. Dans cet article, je discute cette conception, en posant la question suivante : l’estime de soi est-elle un cas particulier de l’estime sociale ? Pour ce faire, je me concentre sur deux problèmes crucia...

  8. Spectral_Engineering_with_CMOS_compatible_SOI_Photonic_Molecules

    CERN Document Server

    Barea, Luis A M; de Rezende, Guilherme F M; Frateschi, Newton C

    2013-01-01

    Photonic systems based on microring resonators have a fundamental constrain given by the strict relationship among free spectral range (FSR), total quality factor (QT) and resonator size, intrinsically making filter spacing, photonic lifetime and footprint interdependent. Here we break this paradigm employing CMOS compatible Silicon-on-Insulator (SOI) photonic molecules based on coupled multiple ring resonators. The resonance wavelengths and their respective linewidths are controlled by the hybridization of the quasi-orthogonal photonic states. We demonstrate photonic molecules with doublet and triplet resonances with spectral spliting only achievable with single rings orders of magnitude larger in foot print. Besides, these splitting are potentially controllable based on the coupling (bonds) between resonators. Finally, the spatial distribution of the hybrid states allows up to sevenfold QT enhancement.

  9. Response of SOI image sensor to therapeutic carbon ion beam

    CERN Document Server

    Matsumura, Akihiko

    2015-01-01

    Carbon ion radiotherapy is known as a less invasive cancer treatment. The radiation quality is an important parameter to evaluate the biological effect and the clinical dose from the measured physical dose. The performance of SOPHIAS detector, which is the SOI image sensor having a wide dynamic range and large active area, was tested by using therapeutic carbon ion beam at Gunma University Heavy Ion Medical Center (GHMC). It was shown that the primary carbon and secondary particles can be distinguishable by SOPHIAS detector. On the other hand, a LET dependence was observed especially at the high LET region. This phenomenon will be studied by using the device simulator together with Monte Carlo simulation.

  10. Lecture de l'autre, écriture de soi: une lecture de Maïs en Grégorien d’Arnaldo Calveyra

    Directory of Open Access Journals (Sweden)

    Mabel Franzone

    2011-04-01

    Full Text Available Cet article est une invitation à considérer la lecture d’un auteur comme un type d’écriture de soi, car, l’ouvrage ici traité a la vertu d’interpeller constamment le lecteur, de le faire réfléchir sur les grands drames de l’humanité. La structure est complexe, à cheval entre plusieurs genres, écrit dans des versets, avec des caractéristiques de l’autobiographie, mais pas reconnue comme telle de façon explicite. Nous utilisons des données théoriques : l’herméneutique amplificatrice du symbole, les structures anthropologiques de l’imaginaire, les théories de la lecture et des notions sur le monde imaginal, la résonance et le retentissement. Néanmoins la dynamique du livre ne permet point de s’attarder dans des considérations théoriques, car il exige totale concentration. Par la ruse d’un miroir, où vont se refléter les pires crimes commis à travers les temps et les espaces, l’auteur rappelle le devoir de prendre une commune responsabilité. Notre pire ennemi sera alors le silence. Par cette mise en branle, l’écrivain nous emmène à nous poser des questions sur notre place dans le monde, sur nos actions et sur notre propre mort. Sûrement ce petit livre peut avoir des multiples lectures, nous avons choisi de nous concentrer sur celle de la « mise en question » aux fins d’aborder la lecture comme un moyen de transformation de l’être, ce qui peut aboutir à l’écriture de soi et ce dans un sens strict comme dans un sens plus large.

  11. Simulation Study on SOI LDMOS Devices with Floating Gates%浮栅结构SOI LDMOS 器件的模拟研究

    Institute of Scientific and Technical Information of China (English)

    葛梅; 王颖

    2011-01-01

    研究了一种具有浮栅结构的SOI LDMOS (FGSOI LDMOS)器件模型,并分析了该结构的耐压机理,通过Silvaco TCAD软件对该结构进行仿真优化.通过仿真验证可知,该结构通过类场板的结终端技术可以调节器件的横向电场,从而得到比普通SOI LDMOS器件更高的耐压并且降低了器件的比导通电阻.仿真结果表明,该结构与普通SOI LDMOS 器件结构在相同的尺寸条件下耐压提高了41%,比导通电阻降低了21.9%.%An SOI LDMOS device structure with floating gates (FG) was investigated and its breakdown mechanism was analyzed. This structure was proved by Silvaco TCAD software. The simulation results show that the lateral electric field of the device is modulated by the technology of the field plate, the breakdown voltage is increased and the specific on-resistance of the device is decreased.Compared with the normal SOI LDMOS device, the breakdown voltage is increased by 41%, the specific on-resistance of the FG SOl LDMOS is decreased by 21.9% .

  12. Test of a fine pitch SOI pixel detector with laser beam

    CERN Document Server

    Liu, Yi; Ju, Xudong; Ouyang, Qun

    2015-01-01

    A fine pitch pixel detector, developed on SOI (Silicon on Insulator) technology, has been tested under the illumination of infrared laser pulses. As an alternative way beside particel beam test, the laser pulses are tuned to very short duration and small transverse profile to simulate tracks of MIPs (Minimum Ionization Particles) in silicon. Hit cluster size and substrate depletion characteristics of this SOI detector are obtained. When focused laser pulses propagate through SOI detector perpendicularly to its surface, the hit cluster is measured, and most of signal charges are collected directly by the seed pixel. The signal amplitude as a function of applied bias voltage has been measured on this SOI detector for the first time, which helps us better understand of depletion characteristics.

  13. Analysis of Kink Reduction in SOI MOSFET Using Selective Back Oxide Structure

    Directory of Open Access Journals (Sweden)

    M. Narayanan

    2012-01-01

    Full Text Available This paper presents a complete analysis of the kink effect in SOI MOSFET and proposes a method for eliminating kink effect observed in the current-voltage output characteristics of a partially depleted SOI MOSFET device. In this method, back oxide for the device is introduced at selected regions below the source and drain and not continuously as in an SOI device giving rise to what is termed a “SELBOX” structure. Selective back oxide structure with different gap lengths and thicknesses was studied. Results obtained through numerical simulations indicate that the proposed structure can significantly reduce the kink while still preserving major advantages offered by conventional SOI structure. Although the new structure is capable of eliminating kink, for narrow gaps the device may still exhibit some kink effect. A device model that explains the kink behavior of the structure for varying gap lengths is also developed.

  14. First results of a Double-SOI pixel chip for X-ray imaging

    Science.gov (United States)

    Lu, Yunpeng; Ouyang, Qun; Arai, Yasuo; Liu, Yi; Wu, Zhigang; Zhou, Yang

    2016-09-01

    Aiming at low energy X-ray imaging, a prototype chip based on Double-SOI process was designed and tested. The sensor and pixel circuit were characterized. The long lasting crosstalk issue in SOI technology was understood. The operation of pixel was verified with a pulsed infrared laser beam. The depletion of sensor revealed by signal amplitudes is consistent with the one revealed by I-V curve. An s-curve fitting resulted in a sigma of 153 e- among which equivalent noise charge (ENC) contributed 113 e-. It's the first time that the crosstalk issue in SOI technology was solved and a counting type SOI pixel demonstrated the detection of low energy radiation quantitatively.

  15. Light-Propagation Characteristics of Photonic Crystal Waveguide Based on SOI Materials at Different Polarized States

    Institute of Scientific and Technical Information of China (English)

    WANG Chun-Xia; XU Xing-Sheng; LI Fang; DU Wei; XIONG Gui-Guang; LIU Yu-Liang; CHEN Hong-Da

    2006-01-01

    @@ Strgight single-line defect optical waveguides in photonic crystal slabs are designed by the plane wave expansion method and fabricated into silicon-on-insulator (SOI) wafer by 248-nm deep UV lithography.

  16. A low on-resistance buried current path SOI p-channel LDMOS compatible with n-channel LDMOS

    Institute of Scientific and Technical Information of China (English)

    Zhou Kun; Luo Xiao-Rong; Fan Yuan-Hang; Luo Yin-Chun; Hu Xia-Rong; Zhang Bo

    2013-01-01

    A novel low specific on-resistance (Ron,sp) silicon-on-insulator (SOI) p-channel lateral double-diffused metal-oxide semiconductor (pLDMOS) compatible with high voltage (HV) n-channel LDMOS (nLDMOS) is proposed.The pLDMOS is built in the N-type SOI layer with a buried P-type layer acting as a current conduction path in the on-state (BP SOI pLDMOS).Its superior compatibility with the HV nLDMOS and low voltage (LV) complementary metal-oxide semiconductor (CMOS) circuitry which are formed on the N-SOI layer can be obtained.In the off-state the P-buried layer built in the N-SOI layer causes multiple depletion and electric field reshaping,leading to an enhanced (reduced) surface field (RESURF)effect.The proposed BP SOI pLDMOS achieves not only an improved breakdown voltage (BV) but also a significantly reduced Ron,sp.The BV of the BP SOI pLDMOS increases to 319 V from 215 V of the conventional SOI pLDMOS at the same half cell pitch of 25 μm,and Ron,sp decreases from 157 mΩ·cm2 to 55 mΩ·cm2.Compared with the PW SOI pLDMOS,the BP SOI pLDMOS also reduces the Ron,sp by 34% with almost the same BV.

  17. A Lateral Differential Resonant Pressure Microsensor Based on SOI-Glass Wafer-Level Vacuum Packaging

    OpenAIRE

    Bo Xie; Yonghao Xing; Yanshuang Wang; Jian Chen; Deyong Chen; Junbo Wang

    2015-01-01

    This paper presents the fabrication and characterization of a resonant pressure microsensor based on SOI-glass wafer-level vacuum packaging. The SOI-based pressure microsensor consists of a pressure-sensitive diaphragm at the handle layer and two lateral resonators (electrostatic excitation and capacitive detection) on the device layer as a differential setup. The resonators were vacuum packaged with a glass cap using anodic bonding and the wire interconnection was realized using a mask-free ...

  18. Micromachined thin-film sensors for SOI-CMOS co-integration

    CERN Document Server

    Laconte, Jean; Raskin, Jean-Pierre

    2006-01-01

    Co-integration of MEMS and MOS in SOI technology is promising and well demonstrated hereThe impact of Micromachining on SOI devices is deeply analyzed for the first timeInclude extensive TMAH etching, residual stress, microheaters, gas-flow sensors reviewResidual stresses in thin films need to be more and more monitored in MEMS designsTMAH micromachining is an attractive alternative to KOH.

  19. Mobility extraction in SOI MOSFETs with sub 1 nm body thickness

    Science.gov (United States)

    Schmidt, M.; Lemme, M. C.; Gottlob, H. D. B.; Driussi, F.; Selmi, L.; Kurz, H.

    2009-12-01

    In this work we discuss limitations of the split-CV method when it is used for extracting carrier mobilities in devices with thin silicon channels like FinFETs, ultra thin body silicon-on-insulator (UTB-SOI) transistors and nanowire MOSFETs. We show that the high series resistance may cause frequency dispersion during the split-CV measurements, which leads to underestimating the inversion charge density and hence overestimating mobility. We demonstrate this effect by comparing UTB-SOI transistors with both recessed-gate UTB-SOI devices and thicker conventional SOI MOSFETs. In addition, the intrinsic high series access resistance in UTB-SOI MOSFETs can potentially lead to an overestimation of the effective internal source/drain voltage, which in turn results in a severe underestimation of the carrier mobility. A specific MOSFET test structure that includes additional 4-point probe channel contacts is demonstrated to circumvent this problem. Finally, we accurately extract mobility in UTB-SOI transistors down to 0.9 nm silicon film thickness (four atomic layers) by utilizing the 4-point probe method and carefully choosing adequate frequencies for the split-CV measurements. It is found that in such thin silicon film thicknesses quantum mechanical effects shift the threshold voltage and degrade mobility.

  20. Front-end electronics of double SOI X-ray imaging sensors

    Science.gov (United States)

    Miyoshi, T.; Arai, Y.; Fujita, Y.; Hara, K.; Ikegami, Y.; Kurachi, I.; Tauchi, K.; Tsuboyama, T.; Yamada, M.; Ono, S.; Nishimura, R.; Hamasaki, R.

    2017-02-01

    We have developed monolithic CMOS pixel sensor using fully-depleted (FD) silicon-on-insulator (SOI) pixel process technology. The SOI substrates consist of high-resistivity silicon with p-n junctions and low-resistivity silicon layers for forming SOI-CMOS circuitry. Tungsten vias are used to make connections between p-n junctions in the silicon substrate and the first metal layers in the top-layer circuitry. Using this sensor construction, high sensor gain in small pixel areas can be achieved. In 2014, a high-resolution, integrated SOI pixel sensor, called INTPIX8, was developed with two types of substrates: a float-zone, p-type layer on a single SOI (SSOI) wafer and a Czochralski, p-type layer on a double SOI (DSOI) wafer. The X-ray spectra were obtained using Am-241 radiation source. The SSOI-based and DSOI-based sensors exhibited different levels of sensor gain and there were no large differences in the noise levels between them.

  1. Research on PD SOI CMOS Analog Circuit Design%部分耗尽型SOI CMOS模拟电路设计研究

    Institute of Scientific and Technical Information of China (English)

    尹雪松; 姜凡; 刘忠立

    2005-01-01

    介绍了部分耗尽型SOI MOS器件浮体状态下的Kink效应及对模拟电路的影响.阐述了4种常用体接触方式及其他消除部分耗尽型SOI MOS器件Kink效应的工艺方法,同时给出了部分耗尽型SOIMOSFET工作在浮体状态下时模拟电路的设计方法.

  2. Learning about Cri du Chat Syndrome

    Science.gov (United States)

    ... Learning About Prostate Cancer Learning About Cri du Chat Syndrome What is cri du chat syndrome? What ... cri du chat syndrome What is cri du chat syndrome? Cri du chat syndrome - also known as ...

  3. 一种自动体偏置多阈值电压高温 SOI CMOS电路%New auto- bulk- biased multi- threshold SOI CMOS circuit operating at high temperature

    Institute of Scientific and Technical Information of China (English)

    张海鹏; 魏同立; 杨国勇; 冯耀兰; 宋安飞

    2001-01-01

    提出了一种高温 SOI CMOS电路设计方法—自动体偏置多阈值电压 SOI CMOS(简称 ABB- MT- SOI CMOS: Auto- Bulk- Biased Multi- Threshold SOI CMOS)电路。文中主要讨论了 ABB- MT- SOI CMOS电路的结构与工作原理 ,设计与布局等,给出了内部电路电压和电流的模拟结果, 并简述了该电路的应用前景。%A new design method of SOI CMOS circuits, a auto- bulk- biased multi- threshold SOI CMOS circuit(Abbreviated as “ ABB- MT- SOI CMOS” ),is put forward. The concept and structure of circuit are presented at first,then followed by the circuit implementation and its operating principle at high temperature, the considerations of its design and layout and the application potential of this kind of SOI CMOS circuits.

  4. Factors Influencing Self-Regulation in E-learning 2.0: Confirmatory Factor Model | Facteurs qui influencent la maîtrise de soi en cyberapprentissage 2.0 : modèle de facteur confirmative

    Directory of Open Access Journals (Sweden)

    Hong Zhao

    2016-04-01

    éterminants environnementaux jouent un rôle clé pour modeler la maîtrise de soi dans le processus d’apprentissage. Cet article rapporte une étude sur les influences de l’environnement de cyberapprentissage 2.0 sur la maîtrise de soi. L’étude a cerné les facteurs qui, dans un tel environnement, influencent la maîtrise de soi et déterminent les relations entre les facteurs et la maîtrise de soi. Un modèle théorique de catégorisation des facteurs de réussite pour l’apprentissage autogéré a été proposé pour ce type d’environnement. Un questionnaire a été conçu selon ce modèle et plus de deux cent cinquante élèves en téléapprentissage à Beijing et à Hong Kong y ont répondu. À l’aide d’une technique de modélisation par équation structurelle, les relations entre les facteurs environnementaux et l’autogestion ont été analysées. Les résultats statistiques ont démontré que plusieurs facteurs affectent l’autogestion dans l’environnement de cyberapprentissage 2.0. Ceux-ci comprennent la qualité du système, la qualité de l’information, la qualité du service et la satisfaction de l’usager.

  5. High performance flexible CMOS SOI FinFETs

    KAUST Repository

    Fahad, Hossain M.

    2014-06-01

    We demonstrate the first ever CMOS compatible soft etch back based high performance flexible CMOS SOI FinFETs. The move from planar to non-planar FinFETs has enabled continued scaling down to the 14 nm technology node. This has been possible due to the reduction in off-state leakage and reduced short channel effects on account of the superior electrostatic charge control of multiple gates. At the same time, flexible electronics is an exciting expansion opportunity for next generation electronics. However, a fully integrated low-cost system will need to maintain ultra-large-scale-integration density, high performance and reliability - same as today\\'s traditional electronics. Up until recently, this field has been mainly dominated by very weak performance organic electronics enabled by low temperature processes, conducive to low melting point plastics. Now however, we show the world\\'s highest performing flexible version of 3D FinFET CMOS using a state-of-the-art CMOS compatible fabrication technique for high performance ultra-mobile consumer applications with stylish design. © 2014 IEEE.

  6. Multi-channel micro neural probe fabricated with SOI

    Institute of Scientific and Technical Information of China (English)

    PEI WeiHua; ZHU Lin; WANG ShuJing; GUO Kai; TANG Jun; ZHANG Xu; LU Lin; GAO ShangKai; CHEN HongDa

    2009-01-01

    Silicon-on-insulator (SOI) substrate is widely used in micro-electro-mechanical systems (MEMS). With the buried oxide layer of SOl acting as an etching stop, silicon based micro neural probe can be fabri-cated with improved uniformity and manufacturability. A seven-record-site neural probe was formed by inductive-coupled plasma (ICP) dry etching of an SOl substrate. The thickness of the probe is 15 μm.The shaft of the probe has dimensions of 3 mmx100 μmx15 μm with typical area of the record site of 78.5 μm2. The impedance of the record site was measured in-vitro. The typical impedance characteris-tics of the record sites are around 2 MΩ at 1 kHz. The performance of the neural probe in-vivo was tested on anesthetic rat. The recorded neural spike was typically around 140 μV. Spike from individual site could exceed 700 μV. The average signal noise ratio was 7 or more.

  7. Scaling issues for analogue circuits using Double Gate SOI transistors

    Science.gov (United States)

    Lim, Tao Chuan; Armstrong, G. Alastair

    2007-02-01

    This work presents a systematic analysis on the impact of source-drain engineering using gate "non-overlapped" on the RF performance of nano-scaled fully depleted Double Gate SOI transistors, when used in the design of a typical two stage Operational Transconductance Amplifier (OTA). It is evident that for a gate length less than 40 nm, the incorporation of optimal source-drain engineering requiring a spacer length, which may exceed the length of the gate, is particularly beneficial in analogue applications. Lengthening the spacer reduces gate capacitance in the weak/moderate inversion region more than transconductance, improving cut-off frequency fT. This improvement is particularly significant in a circuit application where an optimal spacer of 1.5 times the gate length is proposed. This gate under-lapped concept with extended spacer can also significantly enhance DC gain of the OTA, by increasing the Early Voltage, while maximising the transconductance to current ratio in the weak to moderate inversion, close to threshold voltage. With optimally designed devices, the sensitivity of OTA circuit performance to doping profile is shown to be relatively low.

  8. "Cirque du Freak."

    Science.gov (United States)

    Rivett, Miriam

    2002-01-01

    Considers the marketing strategies that underpin the success of the "Cirque du Freak" series. Describes how "Cirque du Freak" is an account of events in the life of schoolboy Darren Shan. Notes that it is another reworking of the vampire narrative, a sub-genre of horror writing that has proved highly popular with both adult and…

  9. "Cirque du Freak."

    Science.gov (United States)

    Rivett, Miriam

    2002-01-01

    Considers the marketing strategies that underpin the success of the "Cirque du Freak" series. Describes how "Cirque du Freak" is an account of events in the life of schoolboy Darren Shan. Notes that it is another reworking of the vampire narrative, a sub-genre of horror writing that has proved highly popular with both adult and…

  10. Restaurant du Rivage, Vevey

    OpenAIRE

    Basini, Sari Bianca; Glocki, Ryszard Nikodem

    2015-01-01

    Après cinquante ans de mutilations, d'abandon et de spéculations économiques, le complexe du château de l'Aile et de la salle du Castillo à Vevey doit redéfinir son rôle public par rapport à la place du Marché et au Jardin du Rivage. S'appuyant sur la mémoire historique en ajoutant une unité à l'ensemble, nous créons un îlot regroupant des fonctions publiques. Il dessert ainsi l'espace ouvert environnant en articulant la relation entre le jardin et la place. L'élargissement de la promenade du...

  11. Two Dimensional Analytical Modeling for SOI and SON MOSFET and Their Performance Comparison

    Directory of Open Access Journals (Sweden)

    Saptarsi Ghosh

    2011-01-01

    Full Text Available During last few decade continuous device performance improvements have been achieved through a combination of device scaling, new device structures and material property improvement to its fundamental limits. Conventional silicon (bulk CMOS technology can’t overcome the fundamental physical limitations belong to sub-micro or nanometer region which leads to alternative device technology like Silicon-on-Insulator (SOI technology and its recent innovative modification Silicon-On-Nothing (SON MOSFET. Analytical simulation is very important to understand the relative performance of those devices under different structural and operational parameter variations. For present analytical simulation asymmetric structure of Silicon-On-Insulator (SOI MOSFET and Silicon-On-Nothing (SON MOSFET are considered. The proposed structure of SON MOSFET is similar to that of the SOI MOSFET with the only exception being the oxide layer here is substituted with air which has much lower permittivity than Silicon-dioxide. Variation of threshold voltage against effective channel lengths is compared for both the structures. From our simulation it is observed that the proposed SON model has lower drain to source current (IDS than SOI model. In our modeling based on solution of two dimensional Poisson’s equation short channel effects such as DIBL and fringing field effects are also taken into account. SON is found to provide better suppression of SCE s than SOI. The results predicted by our analytical simulation hold good agreement with experimental results.

  12. Characteristics analysis of SOI waveguide Michelson interferometers for developing biomedical fiber temperature-sensing head

    Science.gov (United States)

    Tsao, Shyh-Lin; Lee, Shin-Ge

    2000-07-01

    A new silicon-on-insulator (SOI) waveguide Michelson interferometer with Bragg reflective gratings as a biomedical temperature sensing array head is presented in this paper. The waveguide Bragg reflective gratings work as mirrors for adjusting the transfer function of the Michelson interferometer sensor. We will show the comparison of the temperature sensing accuracies of the fiber Bragg grating and SOI waveguide Michelson interferometers in biomedical applications. The grating length and perturbation period of waveguide Bragg grating in SOI waveguide Michelson interferometer will increase as temperature rises, that is, the thermal effects of the reflective Bragg gratings are considered in our analysis. According to the numerical analysis of power reflective spectra of waveguide Michelson interferometers, the temperature sensing waveguide of the Michelson interferometer can improve at least 20 times than the traditional fiber Bragg grating temperature sensor. Moreover, the SOI waveguide interferometer sensor we designed presents high sensitivity than pure single waveguide Bragg grating sensor and fiber Bragg grating sensor by adjusting the length of the two interferometric arms. The full width of half maximum (FWHM) of the frequency responses of passband of SOI waveguide Michelson interferometer can be designed smaller than fiber and waveguide Bragg grating sensors for sensitivity improvement.

  13. Design and implementation of a torque-enhancement 2-axis magnetostatic SOI optical scanner

    Science.gov (United States)

    Tang, Tsung-Lin; Hsu, Chia-Pao; Chen, Wen-Chien; Fang, Weileun

    2010-02-01

    This study demonstrates the torque-enhancement design for a 2-axis magnetostatic SOI scanner driven by a double-side electroplating ferromagnetic film. The present design has two merits: (1) the slender ferromagnetic material patterns with higher length-to-width ratio enhance the magnetization, (2) the backside electroplating of the ferromagnetic film increases the volume of the ferromagnetic materials. This study also establishes the fabrication processes to implement the proposed design. The processes also have two merits: (1) the handle-layer of the SOI wafer is exploited as the shadow mask to pattern the seed-layer at the backside of the device layer, (2) the device layer of the SOI wafer acts as the cathode to enable simultaneous double-side electroplating. In applications, a 2-axis SOI scanner was implemented and characterized. Measurements show a 149% torque enhancement from the double-side electroplating design. The vertical slender ferromagnetic material patterns further increase the magnetostatic torque to 211%. This study also successfully demonstrates the Lissajous scanning using the presented 2-axis SOI scanner.

  14. Amended Electric Field Distribution: A Reliable Technique for Electrical Performance Improvement in Nano scale SOI MOSFETs

    Science.gov (United States)

    Ramezani, Zeinab; Orouji, Ali A.

    2017-04-01

    To achieve reliable transistors, we propose a new silicon-on-insulator (SOI) metal-oxide-semiconductor field-effect transistor (MOSFET) with an amended electric field in the channel for improved electrical and thermal performance, with an emphasis on current leakage improvement. The amended electric field leads to lower electric field crowding and thereby we assume enhanced reliability, leakage current, gate-induced drain leakage (GIDL), and electron temperature. To modify the electric field distribution, an additional rectangular metal region (RMR) is utilized in the buried oxide of the SOI MOSFET. The location and dimensions of the RMR have been carefully optimized to achieve the best results. The electrical, thermal, and radiofrequency characteristics of the proposed structure were analyzed using two-dimensional (2-D) numerical simulations and compared with the characteristics of the conventional, fully depleted SOI MOSFET (C-SOI). Also, critical short-channel effects (SCEs) such as threshold voltage, drain-induced barrier lowering (DIBL), subthreshold slope degradation, hot-carrier effect, GIDL, and leakage power consumption are improved. According to the results obtained, the proposed nano SOI MOSFET is a reliable device, especially for use in low-power and high-temperature applications.

  15. Improved operation of graded-channel SOI nMOSFETs down to liquid helium temperature

    Science.gov (United States)

    Pavanello, Marcelo Antonio; de Souza, Michelly; Ribeiro, Thales Augusto; Martino, João Antonio; Flandre, Denis

    2016-11-01

    This paper presents the operation of Graded-Channel (GC) Silicon-On-Insulator (SOI) nMOSFETs at low temperatures down to liquid helium temperature in comparison to standard uniformly doped transistors. Devices from two different technologies have been measured and show that the mobility increase rate with temperature for GC SOI transistors is similar to uniformly doped devices for temperatures down to 90 K. However, at liquid helium temperature the rate of mobility increase is larger in GC SOI than in standard devices because of the different mobility scattering mechanisms. The analog properties of GC SOI devices have been investigated down to 4.16 K and show that because of its better transconductance and output conductance, an intrinsic voltage gain improvement with temperature is also obtained for devices in the whole studied temperature range. GC devices are also capable of reducing the impact ionization due to the high electric field in the drain region, increasing the drain breakdown voltage of fully-depleted SOI MOSFETs at any studied temperature and the kink voltage at 4.16 K.

  16. Difference of soft error rates in SOI SRAM induced by various high energy ion species

    Energy Technology Data Exchange (ETDEWEB)

    Abo, Satoshi, E-mail: abo@cqst.osaka-u.ac.jp [Center for Quantum Science and Technology Under Extreme Conditions, Osaka University, 1-3 Machikaneyama, Toyonaka, Osaka 560-8531 (Japan); Masuda, Naoyuki; Wakaya, Fujio; Lohner, Tivadar [Center for Quantum Science and Technology Under Extreme Conditions, Osaka University, 1-3 Machikaneyama, Toyonaka, Osaka 560-8531 (Japan); Onoda, Shinobu; Makino, Takahiro; Hirao, Toshio; Ohshima, Takeshi [Semiconductor Analysis and Radiation Effects Group, Environment and Industrial Materials Research Division, Quantum Beam Science Directorate, Japan Atomic Energy Agency, 1233 Watanuki-machi, Takasaki, Gunma 370-1292 (Japan); Iwamatsu, Toshiaki; Oda, Hidekazu [Advanced Device Technology Department, Production and Technology Unit, Devices and Analysis Technology Division, Renesas Electronics Corporation, 751, Horiguchi, Hitachinaka, Ibaraki 312-8504 (Japan); Takai, Mikio [Center for Quantum Science and Technology Under Extreme Conditions, Osaka University, 1-3 Machikaneyama, Toyonaka, Osaka 560-8531 (Japan)

    2012-02-15

    Soft error rates in silicon-on-insulator (SOI) static random access memories (SRAMs) with a technology node of 90 nm have been investigated by beryllium and carbon ion probes. The soft error rates induced by beryllium and carbon probes started to increase with probe energies of 5.0 and 8.5 MeV, in which probes slightly penetrated the over-layer, and were saturated with energies at and above 7.0 and 9.0 MeV, in which the generated charge in the SOI body was more than the critical charge. The soft error rates in the SOI SRAMs by various ion probes were also compared with the generated charge in the SOI body. The soft error rates induced by hydrogen and helium ion probes were 1-2 orders of magnitude lower than those by beryllium, carbon and oxygen ion probes. The soft error rates depend not only on the generated charge in the SOI body but also on the incident ion species.

  17. Atlas du Liban

    Directory of Open Access Journals (Sweden)

    Ramez Philippe Maalouf

    2008-11-01

    Full Text Available Compte-rendu de l’ouvrage Atlas du Liban: territoires et société, sous la direction d’Éric Verdeil, Ghaleb Faour et Sébastien Velut, édition franco-libanaise de l’IFPO (Institut Français du Proche-Orient et du CNRS Liban (Conseil National de la Recherche Scientifique – Liban, Beyrouth 2007.Resenha do livro Atlas du Liban: territoires et société, sob a direção de Éric Verdeil, Ghaleb Faour e Sébastien Velut, editado por iniciativa franco-libanesa do IFPO (Institut Français du Proche-Orient e pelo CNRS Liban (Conseil National de la Recherche Scientifique – Liban, Beirute, 2007.Review of Atlas du Liban: territoires et société, edited by Éric Verdeil, Ghaleb Faour and Sébastien Velut, french-lebanese edition by IFPO (Institut Français du Proche-Orient and CNRS Liban (Conseil National de la Recherche Scientifique – Liban Beirut, 2007.

  18. Ecologie du phytoplancton du lac Kivu

    Directory of Open Access Journals (Sweden)

    Sarmento, H.

    2008-01-01

    Full Text Available Speciation within the African Coffee Pathogen. Cet article analyse s'il est avantageux d'utiliser le compost au lieu de l'engrais minéral pour produire la laitue dans la zone urbaine et péri-urbaine de Yaoundé. Les résultats de terrain montrent l'obtention de rendements et profits plus élevés lorsqu'on utilise le compost. Les résultats de la fonction de production Cobb-Douglas prouvent que l'utilisation du compost est statistiquement significative pour expliquer la variation de rendement de la laitue et que le compost est l'intrant le plus productif. D'autres résultats montrent que le compost fournit la matière organique utile au sol et que les besoins d'irrigation en eau de la culture sont réduits grâce à l'utilisation du compost. Par conséquent, malgré le fait que l'application du compost demande une main-d'oeuvre beaucoup plus élevée, son utilisation est généralement bénéfique pour les agriculteurs vivant aux alentours de Yaoundé. Les programmes de vulgarisation de cet intrant pour encourager son adoption devraient donc figurer parmi les points prioritaires dans la politique agricole du gouvernement camerounais.

  19. Reduced nonlinearities in 100-nm high SOI waveguides

    Science.gov (United States)

    Lacava, C.; Marchetti, R.; Vitali, V.; Cristiani, I.; Giuliani, G.; Fournier, M.; Bernabe, S.; Minzioni, P.

    2016-03-01

    Here we show the results of an experimental analysis dedicated to investigate the impact of optical non linear effects, such as two-photon absorption (TPA), free-carrier absorption (FCA) and free-carrier dispersion (FCD), on the performance of integrated micro-resonator based filters for application in WDM telecommunication systems. The filters were fabricated using SOI (Silicon-on-Insulator) technology by CEA-Leti, in the frame of the FP7 Fabulous Project, which aims to develop low-cost and high-performance integrated optical devices to be used in new generation passive optical- networks (NG-PON2). Different designs were tested, including both ring-based structures and racetrack-based structures, with single-, double- or triple- resonator configuration, and using different waveguide cross-sections (from 500 x 200 nm to 825 x 100 nm). Measurements were carried out using an external cavity tunable laser source operating in the extended telecom bandwidth, using both continuous wave signals and 10 Gbit/s modulated signals. Results show that the use 100-nm high waveguide allows reducing the impact of non-linear losses, with respect to the standard waveguides, thus increasing by more than 3 dB the maximum amount of optical power that can be injected into the devices before causing significant non-linear effects. Measurements with OOK-modulated signals at 10 Gbit/s showed that TPA and FCA don't affect the back-to-back BER of the signal, even when long pseudo-random-bit-sequences (PRBS) are used, as the FCD-induced filter-detuning increases filter losses but "prevents" excessive signal degradation.

  20. MODELES EPIDEMIOLOGIQUES DU SIDA

    OpenAIRE

    M MERAIHI; F. L RAHMANI

    2009-01-01

    L’objectif de cet article est de présenter la modélisation mathématique de la propagation de l’infection dans le contexte de la transmission du virus de l’immunodéficience humaine (VIH) et du syndrome d’immunodéficience acquise (SIDA). Ces modèles sont basés en partie sur les modèles proposés dans le domaine de la modélisation mathématique du SIDA.

  1. A novel high-performance high-frequency SOI MESFET by the damped electric field

    Science.gov (United States)

    Orouji, Ali A.; Khayatian, Ahmad; Keshavarzi, Parviz

    2016-06-01

    In this paper, we introduce a novel silicon-on-insulator (SOI) metal-semiconductor field-effect-transistor (MESFET) using the damped electric field (DEF). The proposed structure is geometrically symmetric and compatible with common SOI CMOS fabrication processes. It has two additional oxide regions under the side gates in order to improve DC and RF characteristics of the DEF structure due to changes in the electrical potential, the electrical field distributions, and rearrangement of the charge carriers. Improvement of device performance is investigated by two-dimensional and two-carrier simulation of fundamental parameters such as breakdown voltage (VBR), drain current (ID), output power density (Pmax), transconductance (gm), gate-drain and gate-source capacitances, cut-off frequency (fT), unilateral power gain (U), current gain (h21), maximum available gain (MAG), and minimum noise figure (Fmin). The results show that proposed structure operates with higher performances in comparison with the similar conventional SOI structure.

  2. Tradeoff between speed and static power dissipation of ultra-thin body SOI MOSFETs

    Institute of Scientific and Technical Information of China (English)

    Tian Yu; Huang Ru; Zhang Xing; Wang Yang-Yuan

    2007-01-01

    The speed performance and static power dissipation of the ultra-thin-body (UTB) MOSFETs have been comprehensively investigated, with both DC and AC behaviours considered. Source/drain extension width (Lsp) and silicon film thickness (tsi) are two independent parameters that influence the speed and static power dissipation of UTB siliconon-insulator (SOI) MOSFETs respectively, which can result in great design flexibility. Based on the different effects of physical and geometric parameters on device characteristics, a method to alleviate the contradiction between power dissipated and speed of UTB SOI MOSFETs is proposed. The optimal design regions of tsi and Lsp for low operating power and high performance logic applications are given, which may shed light on the design of UTB SOI MOSFETs.

  3. Ultra-thin fully-depleted SOI MOSFETs: Special charge properties and coupling effects

    Science.gov (United States)

    Eminente, S.; Cristoloveanu, S.; Clerc, R.; Ohata, A.; Ghibaudo, G.

    2007-02-01

    A standard characterization method in fully depleted SOI devices consists in biasing the back interface in the accumulation regime, and measuring the front-channel properties. In ultra thin body device however, it is sometimes no longer possible to achieve such an accumulation regime at the back interface. This unusual effect is investigated by detailed simulations and analytical modelling of the potential and electron/hole concentrations. The enhancement of the interface coupling effect in ultra thin body devices, called super-coupling, can explain previously published experimental data [Pretet J, Ohata A, Dieudonne F, Allibert F, Bresson N, Matsumoto T, et al. Scaling issues for advanced SOI devices: gate oxide tunneling, thin buried oxide, and ultra-thin films. In: 7th International symposium silicon nitride and silicon dioxide thin insulating films, Paris, France, 2003. Electrochemical Society Proceedings, vol. 2003-02, Pennington (USA); 2003. p. 476-87], and reveals new challenges in the characterization of advanced SOI devices.

  4. A Demonstration of TIA Using FD-SOI CMOS OPAMP for Far-Infrared Astronomy

    Science.gov (United States)

    Nagase, Koichi; Wada, Takehiko; Ikeda, Hirokazu; Arai, Yasuo; Ohno, Morifumi; Hanaoka, Misaki; Kanada, Hidehiro; Oyabu, Shinki; Hattori, Yasuki; Ukai, Sota; Suzuki, Toyoaki; Watanabe, Kentaroh; Baba, Shunsuke; Kochi, Chihiro; Yamamoto, Keita

    2016-07-01

    We are developing a fully depleted silicon-on-insulator (FD-SOI) CMOS readout integrated circuit (ROIC) operated at temperatures below ˜ 4 K. Its application is planned for the readout circuit of high-impedance far-infrared detectors for astronomical observations. We designed a trans-impedance amplifier (TIA) using a CMOS operational amplifier (OPAMP) with FD-SOI technique. The TIA is optimized to readout signals from a germanium blocked impurity band (Ge BIB) detector which is highly sensitive to wavelengths of up to ˜ 200 \\upmu m. For the first time, we demonstrated the FD-SOI CMOS OPAMP combined with the Ge BIB detector at 4.5 K. The result promises to solve issues faced by conventional cryogenic ROICs.

  5. A new fabrication process for the SOI-based miniature electric field sensor

    Institute of Scientific and Technical Information of China (English)

    Liu Wei; Yang Pengfei; Peng Chunrong; Fang Dongming; Xia Shanhong

    2013-01-01

    This paper presents a new fabrication process for the SOI-based novel miniature electric field sensor.This new process uses polyimide film to release the SiO2 layer.Compared with the CO2 critical point release method,it significantly improves the device surface cleanliness and shortens the process flow.The impurity on the base layer is analyzed.The problem of peak and butterfly-type contamination occurring on the base layer of the SOI wafer during the DRIE process is discussed and solved by thickening the photoresist layer and coating with polyimide film twice.This new process could fabricate MEMS sensors and actuators such as SOI-based electric field sensors,gyroscopes,and micro mirrors and can be an alternative fabrication process compared to commercial SOIMUMPS fabrication processes.

  6. The Parasitic Bipolar Effects of 0.5 μm Partially Depleted SOI MOSFET%0.5μm部分耗尽SOI MOSFET中的寄生双极效应

    Institute of Scientific and Technical Information of China (English)

    洪根深; 顾爱军

    2012-01-01

    SOI circuits sensitivity to single event upset (SEU) and transient Y-ray radiation is reduced due to parasitic bipolar effects of SOI MOSFET. In this paper, 0. 5 f?n partially depleted SOI NMOSFET parasitic bipolar effects related to gate voltage, drain voltage, and body contact are given. Parasitic bipolar effects are easily trigged when 0. 5 ftm SOI NMOSFET body is floated, and then single transistor latch-up is induced. Therefore, it is necessary to reduce parasitic bipolar effects of SOI NMOSFE in order to improve SOI device sensitivity to SEU and transient T-radiation.%0.5 μm部分耗尽SOI MOSFET的寄生双极效应严重影响了SOI器件和电路的抗单粒子和抗瞬态γ辐射能力.文中显示,影响0.5 μm部分耗尽SOI NMOSFET寄生的双极器件特性的因素很多,包括NMOSFET的栅上电压、漏端电压和体接触等,尤其以体接触最为关键.在器件处于浮体状态时,0.5 μm SOI NMOSFET的寄生双极器件很容易被触发,导致单管闭锁.因此,在设计抗辐射SOI电路时,需要尽量降低SOI NMOSFET寄生双极效应,以提高电路的抗单粒子和抗瞬态γ辐射能力.

  7. Three-Dimensional Wafer Stacking Using Cu TSV Integrated with 45 nm High Performance SOI-CMOS Embedded DRAM Technology

    Directory of Open Access Journals (Sweden)

    Pooja Batra

    2014-05-01

    Full Text Available For high-volume production of 3D-stacked chips with through-silicon-vias (TSVs, wafer-scale bonding offers lower production cost compared with bump bond technology and is promising for interconnect pitches smaller than 5 µ using available tooling. Prior work has presented wafer-scale integration with tungsten TSV for low-power applications. This paper reports the first use of low-temperature oxide bonding and copper TSV to stack high performance cache cores manufactured in 45 nm Silicon On Insulator-Complementary Metal Oxide Semiconductor (SOI-CMOS embedded DRAM (EDRAM having 12 to 13 copper wiring levels per strata and upto 11000 TSVs at 13 µm pitch for power and signal delivery. The wafers are thinned to 13 µm using grind polish and etch. TSVs are defined post bonding and thinning using conventional alignment techniques. Up to four additional metal levels are formed post bonding and TSV definition. A key feature of this process is its compatibility with the existing high performance POWER7™ EDRAM core requiring neither modification of the existing CMOS fabrication process nor re-design since the TSV RC characteristic is similar to typical 100–200 µm length wiring load enabling 3D macro-to-macro signaling without additional buffering Hardware measurements show no significant impact on device drive and off-current. Functional test at wafer level confirms 2.1 GHz 3D stacked EDRAM operation.

  8. III-V/SOI vertical cavity laser structure for 120 Gbit/s speed

    DEFF Research Database (Denmark)

    Park, Gyeong Cheol; Xue, Weiqi; Mørk, Jesper;

    2015-01-01

    Ultrashort-cavity structure for III-V/SOI vertical cavity laser with light output into a Si waveguide is proposed, enabling 17 fJ/bit efficiency or 120 Gbit/s speed. Experimentally, 27-GHz bandwidth is demonstrated at 3.5 times of threshold. © 2015 OSA.......Ultrashort-cavity structure for III-V/SOI vertical cavity laser with light output into a Si waveguide is proposed, enabling 17 fJ/bit efficiency or 120 Gbit/s speed. Experimentally, 27-GHz bandwidth is demonstrated at 3.5 times of threshold. © 2015 OSA....

  9. Application of SOI Area Detectors to Synchrotron Radiation X-ray Experiments

    CERN Document Server

    Hashimoto, Ryo; Kumai, Reiji; Kishimoto, Shunji

    2015-01-01

    Application of new detectors using Silicon-On-Insulator (SOI) technology has been started in the Photon Factory, KEK. This project has two purposes. The first purpose is to develop a pulse-counting-type X-ray detector which can be used in synchrotron soft X-ray experiments. The second one is to apply the SOI area detector developed by RIKEN, SOPHIAS, to X-ray diffraction and small-angle scattering experiments in Photon Factory. In this paper, we introduce the current status of our project.

  10. Body factor conscious modeling of single gate fully depleted SOI MOSFETs for low power applications

    Science.gov (United States)

    Kumar, Anil; Nagumo, Toshiharu; Tsutsui, Gen; Ohtou, Tetsu; Hiramoto, Toshiro

    2005-06-01

    Degradation of body factor (γ) and subthreshold factor (S) of single gate fully depleted SOI MOSFETs due to short channel effects has been studied analytically. The effect of source/drain fringing fields in buried oxide is found to play a more significant role in the reduction of body factor at smaller gate lengths. Present work provides the analytical expressions of effective back gate voltage, body factor and subthreshold factor of short channel fully depleted SOI MOSFETs. The results obtained are found in good approximation with 2D simulation.

  11. Modeling Electron Transport in Vertical-SOI NMOSFET by Directly Solving BTE with FEA

    Institute of Scientific and Technical Information of China (English)

    TONG Jian-nong; ZOU Xue-cheng; SHEN Xu-bang

    2004-01-01

    A numerical schemes applicable to the direct solution of Boltzmann transport equation (BTE) in vertical-SOI NMOSFET are investigated by means of the finite element analysis (FEA).The solution gives the electron distribution function,electrostatic potential,carriers concentration,drift velocity,average energy and drain current by directly solving the BTE and the Poisson equation self-consistency.The result shows that the direct numerical solution of the BTE with the aid of FEA and vertical SOI NMOSFET is a promising approach for ultra short channel transistors modeling.

  12. Light extraction enhancement of SOI-based erbium/oxygen Co-implanted photonic crystal microcavities

    Institute of Scientific and Technical Information of China (English)

    Zhang Jiashun; Wang Yue; Wu Yuanda; Zhang Xiaoguang; Jiang Ting; An Junming; Li Jianguang; Wang Hongjie; Hu Xiongwei

    2011-01-01

    H5 photonic crystal (PC) microcavities co-implanted with erbium (Er) and oxygen (O) ions were fabricated on silicon-on-insulator (SOI) wafers.Photoluminescence (PL) measurements were taken at room temperature and a light extraction enhancement of up to 12 was obtained at 1.54μm,as compared to an identically implanted unpatterned SOI wafer.In addition,we also explored the adjustment of cavity modes by changing the structural parameters of the PC,and the measured results showed that the cavity-resonant peaks shifted towards shorter wavelengths as the radius of the air holes increased,which is consistent with the theoretical simulation.

  13. Split-Capacitance and Conductance-Frequency Characteristics of SOI Wafers in Pseudo-MOSFET Configuration

    KAUST Repository

    Pirro, Luca

    2015-09-01

    Recent experimental results have demonstrated the possibility of characterizing silicon-on-insulator (SOI) wafers through split C-V measurements in the pseudo-MOSFET configuration. This paper analyzes the capacitance and conductance versus frequency characteristics. We discuss the conditions under which it is possible to extract interface trap density in bare SOI wafers. The results indicate, through both measurements and simulations, that the signature due to interface trap density is present in small-area samples, but is masked by the RC response of the channel in regular, large-area ones, making the extraction in standard samples problematic. © 1963-2012 IEEE.

  14. Types du Caucase

    OpenAIRE

    Makhacheva, Taus

    2015-01-01

    Tiré du site Internet de Onestar Press: "Types du Caucase - antique postcard collection/ 2013 to the present time. Coming from the personal archive of the artist, these postcards date back to the 19th century and can be considered representative for the "popularized ethnography" of the Russian Empire. Their primitive typology follows the classical rules of exotization : they depict "pittoresque" groups from various tribes, families or nationalities, or representatives of diverse professions. ...

  15. Les outils du CERN

    CERN Multimedia

    1999-01-01

    C'est le plus grand centre mondial de recherche en physique des particules. Les outils du Laboratoire, accélérateurs et détecteurs de particules, figurent parmi les instruments scientifiques les plus complexes au monde. Des prix Nobels ont d'ailleurs été attribués aux physiciens du CERN pour leurs développements.

  16. Les Plantations D’alignements En Turquie

    Directory of Open Access Journals (Sweden)

    Metin SARIBAŞ

    2008-01-01

    Full Text Available L’état actuel des forets de Turquie est insuffisant pour les besoins en bois. İl est indispensable de chercher denouvelles alternatives pour enrichir les produits du bois en dehors de la source forestière. Les plantationsd’alignements peuvent etre les ressources assez abondantes.Actuellement les pays qui font les plantations d’alignements sont: France, L’İtalie, Belgique, Pays-Bas,L’Allemange, L’Angleterre, Hongrie, Turquie, Grèce; L’Iraq, L’İran, Au Japonais, Aux Etat-Unis, Au Canada,L’Argentine, Bosna -Herzégovinia, L’Avustralie, Bulgaria etc. Selon les etudes de L’İnstitut Turc de RecherchePeuplier à İzmit en Turquie, longueurs des plantations routières sont aux environs de 64000km. D’aprés Hilf(1953 en France %10; en Angletterre %30 de production du bois était à l’origine des plantations routières.Depuis longtemps on discute des inconvénients et des avantages des plantations d’alignements. A parte quelquesrares exceptions, les plantations sont donc devenues pratique, courante, confiées le plus souvent a des servicesadministratifs et lorsqu’elles ne sont pas rendues obligatoires, encoragées tout au moins par subventions, enargents ou en nature et par exemptions d’impots.Les essences utilisées dans les plantations d’alignements sont: Le Platane, L’Orme, Le Peuplier, Le Frene, LeTilleul, L’Erable, Le Sycomore, Le Robinier, L’Acacia, Le Pavia, Le Noyer, Le Carya, Le Chataigner, L’Aulne,Le Bouleau, Le Chene, Le Hetre, Le Paulownia, Aillanthe, L’Alisier, Le Charme, Le Murrier etc. Dans notrearticle on porrrait étudier le potentiel prochain en détail les plantations d’alignements actuelle et dans l’avenir.

  17. Vibrating wire alignment technique

    CERN Document Server

    Xiao-Long, Wang; lei, Wu; Chun-Hua, Li

    2013-01-01

    Vibrating wire alignment technique is a kind of method which through measuring the spatial distribution of magnetic field to do the alignment and it can achieve very high alignment accuracy. Vibrating wire alignment technique can be applied for magnet fiducialization and accelerator straight section components alignment, it is a necessary supplement for conventional alignment method. This article will systematically expound the international research achievements of vibrating wire alignment technique, including vibrating wire model analysis, system frequency calculation, wire sag calculation and the relation between wire amplitude and magnetic induction intensity. On the basis of model analysis this article will introduce the alignment method which based on magnetic field measurement and the alignment method which based on amplitude and phase measurement. Finally, some basic questions will be discussed and the solutions will be given.

  18. Nonlinear Parasitic Capacitance Modelling of High Voltage Power MOSFETs in Partial SOI Process

    DEFF Research Database (Denmark)

    Fan, Lin; Knott, Arnold; Jørgensen, Ivan Harald Holger

    2016-01-01

    : off-state, sub-threshold region, and on-state in the linear region. A high voltage power MOSFET is designed in a partial Silicon on Insulator (SOI) process, with the bulk as a separate terminal. 3D plots and contour plots of the capacitances versus bias voltages for the transistor summarize...

  19. Optimization of Nonlinear Figure-of-Merits of Integrated Power MOSFETs in Partial SOI Process

    DEFF Research Database (Denmark)

    Fan, Lin; Jørgensen, Ivan Harald Holger; Knott, Arnold

    2016-01-01

    different operating conditions. A systematic analysis of the optimization of these FOMs has not been previously established. The optimization methods are verified on a 100 V power MOSFET implemented in a 0.18 µm partial SOI process. Its FOMs are lowered by 1.3-18.3 times and improved by 22...

  20. Investigation of AlN Thin Films as Buried Insulator in SOI Structure

    Institute of Scientific and Technical Information of China (English)

    2002-01-01

    Self-heating effects in silicon-on-insulator (SOI) devices limit the applicability of SOI materials in electronics in cases where high power dissipation is expected. AlN film as a potential candidate for buried insulator material in SOI-structures is investigated. Ion-beam-enhanced deposition (IBED) is used to manufacture large area AlN films. SIMS measurements indicate the formation of AlN films. The characterization of the films reveals that the quality of the films strongly depends on the evaporation rate of Al. For the film with high quality deposited at 0.05nm/s, it has higher component of N, excellent dielectric property and a smoother surface with roughness RMS value of 0.13nm, and can be bonded directly at room temperature by the smart-cut process. SOI structure with the AlN film as buried insulator has formed successfully for the first time, which is confirmed by XTEM micrograph.

  1. Extreme group index measured and calculated in 2D SOI-based photonic crystal waveguides

    DEFF Research Database (Denmark)

    Lavrinenko, Andrei; Jacobsen, Rune Shim; Fage-Pedersen, Jacob;

    2005-01-01

    lattice of air-holes in the 216-nm thick silicon layer in an SOI material. Experimental transmission spectra show a mode cut-off around 1562.5 nm for the fundamental photonic bandgap mode. In order to measure and model the group index of modes in the PCW, a time-of-flight (ToF) method is applied....

  2. Sensing platform based on micro-ring resonator and on-chip reference sensors in SOI

    NARCIS (Netherlands)

    Chakkalakkal Abdulla, S.M.C.; Boer, B.M. de; Pozo Torres, J.M.; Berg, J.H. van den; Abutan, A.E.; Hagen, R.A.J.; Lo Cascio, D.M.R.; Harmsma, P.J.

    2014-01-01

    This article presents work on a Silicon-On-Insulator (SOI) compact sensing platform based on Micro Ring Resonators (MRRs). In order to enable correction for variations in environmental conditions (temperature, mechanical stress etc), a study has been performed on the performance of uncoated sensing

  3. SOI based mechano-optical pressure sensor using a folded micro ring resonator

    NARCIS (Netherlands)

    Chakkalakkal Abdulla, S.M.C.; Harmsma, P.J.; Nieuwland, R.A.; Pozo Torres, J.M.; Lemmen, M.H.J.; Sadeghian Marnani, H.; Berg, J.H. van den; Bodis, P.; Buskens, P.

    2012-01-01

    A compact, mass producible Silicon On Insulator (SOI) based pressure sensor consisting of a folded Micro Ring Resonator (MRR) on a circular diaphragm is successfully designed, fabricated and characterized. An application of pressure deflects the diaphragm, causing stress in the MRR, which elongates

  4. Diamond-shaped body contact for on-state breakdown voltage improvement of SOI LDMOSFET

    Science.gov (United States)

    Daghighi, Arash; Hematian, Hadi

    2017-03-01

    In this paper, we report a diamond-shaped body contact (DSBC) for silicon-on-insulator (SOI) LDMOSFET. Several DSBC devices along with conventional body contact (CBC) structures are laid out using 0.35 μm SOI MOSFET foundry process. The DSBC device is designed using the same standard layers as in the CBC structure and the contact layout is adapted to process design rules. Experimental characterization of the CBC and DSBC devices in terms of off-state breakdown voltage (BVoff), on-state breakdown voltage (BVon), on-resistance (Ron) and device foot print showed 19% improvement in BVon compared DSBC device with that of the CBC structure. BVoff and Ron of both of the devices are identical. The device foot print is smaller in DSBC device by 11% compared with that of the CBC structure leading to enhanced "On-resistance × Area" figure of merit where smaller high voltage SOI LDMOSEFT reduces the area and cost of power integrated circuits. In order to explain BVon improvement of DSBC structures, three-dimensional (3-D) device simulation is carried out to clarify the lateral BJT action and breakdown mechanism. It is demonstrated that the number of P+ diffusions in DSBC device can be increased to improve BVon without increasing "On-resistance × Area". The on-state breakdown voltage improvement and area efficiency of the diamond-shaped body contact proposes it as a promising candidate for reliable operation of SOI LDMOSFET.

  5. Experimental assessment of self-heating in SOI FinFETs

    NARCIS (Netherlands)

    Scholten, A.J.; Smit, G.D.J.; Pijper, R.M.T.; Tiemijer, L.F.; Tuinhout, H.P.; Steen, van der J.-L.P.J.; Mercha, A.; Braccioli, M.; Klaassen, D.B.M.

    2009-01-01

    In this paper, it is shown that self-heating causes a gigantic effect on the capacitances of MOSFETs/FinFETs. The effect is used to determine the SOI FinFET thermal impedance and to determine the temperature rise during FinFET operation

  6. Gamma Polari-Calorimetry with SOI pixels for proposals at Extreme Light Infrastructure (ELI-NP)

    CERN Document Server

    Homma, Kensuke

    2015-01-01

    We introduce the concept of Gamma Polari-Calorimetry (GPC) dedicated for proposals at Extreme Light Infrastructure in the Romanian site (ELI-NP). A simulation study shows that an assembly of thin SOI pixel sensors can satisfy our requirements to GPC.

  7. Characterization of Single-Photon Avalanche Diodes in Standard 140-nm SOI CMOS Technology

    NARCIS (Netherlands)

    Lee, M.J.; Sun, P.; Charbon, E.

    2015-01-01

    We report on the characterization of single-photon avalanche diodes (SPADs) fabricated in standard 140-nm silicon on insulator (SOI) complementary metal-oxide-semiconductor (CMOS) technology. As a methodology for SPAD optimization, a test structure array, called SPAD farm, was realized with several

  8. MUON DETECTORS: ALIGNMENT

    CERN Multimedia

    G.Gomez.

    Since June of 2009, the muon alignment group has focused on providing new alignment constants and on finalizing the hardware alignment reconstruction. Alignment constants for DTs and CSCs were provided for CRAFT09 data reprocessing. For DT chambers, the track-based alignment was repeated using CRAFT09 cosmic ray muons and validated using segment extrapolation and split cosmic tools. One difference with respect to the previous alignment is that only five degrees of freedom were aligned, leaving the rotation around the local x-axis to be better determined by the hardware system. Similarly, DT chambers poorly aligned by tracks (due to limited statistics) were aligned by a combination of photogrammetry and hardware-based alignment. For the CSC chambers, the hardware system provided alignment in global z and rotations about local x. Entire muon endcap rings were further corrected in the transverse plane (global x and y) by the track-based alignment. Single chamber track-based alignment suffers from poor statistic...

  9. MUON DETECTORS: ALIGNMENT

    CERN Multimedia

    G. Gomez and J. Pivarski

    2011-01-01

    Alignment efforts in the first few months of 2011 have shifted away from providing alignment constants (now a well established procedure) and focussed on some critical remaining issues. The single most important task left was to understand the systematic differences observed between the track-based (TB) and hardware-based (HW) barrel alignments: a systematic difference in r-φ and in z, which grew as a function of z, and which amounted to ~4-5 mm differences going from one end of the barrel to the other. This difference is now understood to be caused by the tracker alignment. The systematic differences disappear when the track-based barrel alignment is performed using the new “twist-free” tracker alignment. This removes the largest remaining source of systematic uncertainty. Since the barrel alignment is based on hardware, it does not suffer from the tracker twist. However, untwisting the tracker causes endcap disks (which are aligned ...

  10. La puissance du regard chez Marie-Claire Blais: de la honte à l’affirmation de soi

    Directory of Open Access Journals (Sweden)

    Eva Pich Ponce

    2009-04-01

    Full Text Available In Marie-Claire Blais’ first novels, the images of eyes and glances acquire a great significance. They highlight the character’srelationships, conformism or rebelliousness. The other’s constant gaze arouses feelings of shame and remorse in the character whichis being observed. This article will illustrate how Marie-Claire Blais’ portrayals of eyes and glances allow her to draw attention tothe character’s relationships and to denounce the dramatic consequences the notions of guilt and shame have in the searchof individual identity.

  11. Advanced Liquid-Free, Piezoresistive, SOI-Based Pressure Sensors for Measurements in Harsh Environments

    Directory of Open Access Journals (Sweden)

    Ha-Duong Ngo

    2015-08-01

    Full Text Available In this paper we present and discuss two innovative liquid-free SOI sensors for pressure measurements in harsh environments. The sensors are capable of measuring pressures at high temperatures. In both concepts media separation is realized using a steel membrane. The two concepts represent two different strategies for packaging of devices for use in harsh environments and at high temperatures. The first one is a “one-sensor-one-packaging_technology” concept. The second one uses a standard flip-chip bonding technique. The first sensor is a “floating-concept”, capable of measuring pressures at temperatures up to 400 °C (constant load with an accuracy of 0.25% Full Scale Output (FSO. A push rod (mounted onto the steel membrane transfers the applied pressure directly to the center-boss membrane of the SOI-chip, which is placed on a ceramic carrier. The chip membrane is realized by Deep Reactive Ion Etching (DRIE or Bosch Process. A novel propertied chip housing employing a sliding sensor chip that is fixed during packaging by mechanical preloading via the push rod is used, thereby avoiding chip movement, and ensuring optimal push rod load transmission. The second sensor can be used up to 350 °C. The SOI chips consists of a beam with an integrated centre-boss with was realized using KOH structuring and DRIE. The SOI chip is not “floating” but bonded by using flip-chip technology. The fabricated SOI sensor chip has a bridge resistance of 3250 Ω. The realized sensor chip has a sensitivity of 18 mV/µm measured using a bridge current of 1 mA.

  12. Advanced Liquid-Free, Piezoresistive, SOI-Based Pressure Sensors for Measurements in Harsh Environments.

    Science.gov (United States)

    Ngo, Ha-Duong; Mukhopadhyay, Biswaijit; Ehrmann, Oswin; Lang, Klaus-Dieter

    2015-08-18

    In this paper we present and discuss two innovative liquid-free SOI sensors for pressure measurements in harsh environments. The sensors are capable of measuring pressures at high temperatures. In both concepts media separation is realized using a steel membrane. The two concepts represent two different strategies for packaging of devices for use in harsh environments and at high temperatures. The first one is a "one-sensor-one-packaging_technology" concept. The second one uses a standard flip-chip bonding technique. The first sensor is a "floating-concept", capable of measuring pressures at temperatures up to 400 °C (constant load) with an accuracy of 0.25% Full Scale Output (FSO). A push rod (mounted onto the steel membrane) transfers the applied pressure directly to the center-boss membrane of the SOI-chip, which is placed on a ceramic carrier. The chip membrane is realized by Deep Reactive Ion Etching (DRIE or Bosch Process). A novel propertied chip housing employing a sliding sensor chip that is fixed during packaging by mechanical preloading via the push rod is used, thereby avoiding chip movement, and ensuring optimal push rod load transmission. The second sensor can be used up to 350 °C. The SOI chips consists of a beam with an integrated centre-boss with was realized using KOH structuring and DRIE. The SOI chip is not "floating" but bonded by using flip-chip technology. The fabricated SOI sensor chip has a bridge resistance of 3250 Ω. The realized sensor chip has a sensitivity of 18 mV/µm measured using a bridge current of 1 mA.

  13. Miroir interne déformant de l'image de soi : élaboration conceptuelle intégrant la clinique et les découvertes récentes des neurosciences

    OpenAIRE

    Scholl, Jean-Marc; Philippe, Paule

    2007-01-01

    Neurosciences : Un réseau neuronal spécifiquement référé au "self" du sujet est mis en évidence en neuroimagerie (Ph Fossati). Il intervient pour se remémore des attributs référés au self. Ce réseau est différent de celui qui permet au sujet de donner des attributs à d'autres individus. Le réseau référé au self permet d'être en contact immédiat avec l'image et la connaissance de soi. De plus, le rappel mnésique des attributs positifs et négatifs référés au self met en jeu des réseaux neur...

  14. Analytical modeling of drain current and RF performance for double-gate fully depleted nanoscale SOI MOSFETs

    Institute of Scientific and Technical Information of China (English)

    Rajiv Sharma; Sujata Pandey; Shail Bala Jain

    2012-01-01

    A new 2D analytical drain current model is presented for symmetric double-gate fully depleted nanoscale SOI MOSFETs.Investigation of device parameters like transconductance for double-gate fully depleted nanoscale SOI MOSFETs is also carried out.Finally this work is concluded by modeling the cut-off frequency,which is one of the main figures of merit for analog/RF performance for double-gate fully depleted nanoscale SOI MOSFETs.The results of the modeling are compared with those obtained by a 2D ATLAS device simulator to verify the accuracy of the proposed model.

  15. Le rythme du silence

    OpenAIRE

    Meschonnic, Henri

    2017-01-01

    1. Pour rompre le silence Dire « rythme du silence », c’est non seulement penser le silence comme langage, et parfois la réalisation maximale du langage, mais aussi parcourir les acceptions de la notion de silence. De ce qui n’est pas dit, ou qu’on est incapable de dire à ce que les mots ne peuvent pas dire, le fameux indicible, mais aussi l’innommable, et la censure, faire silence sur, jusqu’au problème poétique. Il y a aussi une langue de bois du silence. Et aussi le silence de ce qu’on ent...

  16. L’imagerie du corps interne.

    Directory of Open Access Journals (Sweden)

    Jenny Slatman

    2004-04-01

    Full Text Available Les technologies contemporaines de l’image, telles que les ultrasons, l’endoscopie, et autres IRM et scanners, transforment l’image de notre corps. Dans cet article, cette transformation  est particulièrement mise en lumière à partir d’une œuvre de Mona Hatoum intitulée “ Corps étranger ”. Cette œuvre d’art consiste en une projection vidéo d’images endoscopiques de l’intérieur du corps de l’artiste. On dit souvent qu’il est impossible de s’identifier soi-même à partir de ce type d’images dans la mesure où elles sont difficilement reconnaissables comme des parties de son corps propre. Ou encore qu’elles n’appartiennent pas à l’image narcissique du corps. A l’aide d’une analyse phénoménologique et psychanalytique, l’auteur s’attache ici au contraire à montrer que de telles images fournissent une image affective de notre corps propre et qu’à travers elles il devient possible d’affronter l’étrangeté de celui-ci.Contemporary imaging technologies, such as ultrasound, endoscopy, MRI, PET or CT scan, transform our ìbody imageî. In this article, this transformation is articulated by means of an analysis of an artwork by Mona Hatoum, entitled Corps Ètranger. This work of art consists of a video projection of endoscopic images of the artistís interior body. It is often claimed that one cannot identify oneself with this kind of images since they are hardly recognizable as parts of oneís own body. As such they do not belong to the narcissistic image of the body. By means of a phenomenological and psychoanalytic analysis, it is here argued, however, that these images provide an affective image of oneís own body in which one can face the strangeness of oneís own body.

  17. La profanation du montage

    OpenAIRE

    Hildebrandt, Toni

    2017-01-01

    Cet article examine les liens entre, pour l’aspect technique, le plan séquence et le montage, et, pour l’aspect philosophico-historique, la vie quotidienne et la politique mondiale, du point de vue d’une profanation capable de désamorcer la puissance et avec une attention particulière portée à l’unique film expérimental de Pasolini : La sequenza del fiore di (1968). Ce court métrage n’a pas seulement un statut spécial dans la filmographie de Pasolini, il marque aussi un tournant du tragique v...

  18. Identification des objets et detection de leur alignement en utilisant la technologie RFID

    Science.gov (United States)

    Rahma, Zayoud

    De nos jours, les vehicules motorises sont essentiels dans notre vie quotidienne, d'ou la necessite de leur approvisionnement en carburant. L'approvisionnement en carburant peut entrainer certains inconvenients, tels que: les files d'attente, la disponibilite non-continuelle du carburant et les fraudes. Les problemes d'attente et de disponibilite non-continuelle du carburant peuvent etre facilement resolus en allant a une autre station d'essence aux alentours si disponibles. Par contre le probleme de fraudes est plus difficile a resoudre. De ce fait, decoule notre solution qui consiste a developper un systeme intelligent pour la gestion d'approvisionnement en carburant afin de remedier a ce probleme de fraudes. Pour des raisons de surete, il faut eviter les risques d'etincelles dans l'environnement du carburant. En particulier, il convient de ne pas utiliser un systeme utilisant 1'electricite proche de la pompe, du tuyau ou du reservoir du carburant du vehicule. Nous avons choisi la technologie RFID (Radio Frequency IDentification) et avons opte pour l'utilisation des etiquettes passives, etant donne que les etiquettes semi-passives ou actives contiennent une batterie electrique et sont nettement plus cheres. Un vehicule motorise sera identifie avec une etiquette RFID passive collee au-dessus du goulot de son reservoir. Deux autres etiquettes RFID seront placees sur le pistolet de sorte que le flux du carburant ne sera autorise que lorsque les trois etiquettes sont alignees. Notre travail etait a la demande d'une entreprise petroliere ayant une chaine internationale de stations de carburant. Le travail consiste en la conception, par la recherche, du systeme requis et s'articule sur l'optimisation de la topologie des antennes et des etiquettes de sorte que le systeme juge qu'il y a alignement lorsque le bec du pistolet est fonce dans le goulot du reservoir, et par consequent autorise le versement du carburant. Dans tous les autres cas, le systeme doit juger qu'il n

  19. MUON DETECTORS: ALIGNMENT

    CERN Multimedia

    G.Gomez

    2010-01-01

    The main developments in muon alignment since March 2010 have been the production, approval and deployment of alignment constants for the ICHEP data reprocessing. In the barrel, a new geometry, combining information from both hardware and track-based alignment systems, has been developed for the first time. The hardware alignment provides an initial DT geometry, which is then anchored as a rigid solid, using the link alignment system, to a reference frame common to the tracker. The “GlobalPositionRecords” for both the Tracker and Muon systems are being used for the first time, and the initial tracker-muon relative positioning, based on the link alignment, yields good results within the photogrammetry uncertainties of the Tracker and alignment ring positions. For the first time, the optical and track-based alignments show good agreement between them; the optical alignment being refined by the track-based alignment. The resulting geometry is the most complete to date, aligning all 250 DTs, ...

  20. MUON DETECTORS: ALIGNMENT

    CERN Multimedia

    Z. Szillasi and G. Gomez.

    2013-01-01

    When CMS is opened up, major components of the Link and Barrel Alignment systems will be removed. This operation, besides allowing for maintenance of the detector underneath, is needed for making interventions that will reinforce the alignment measurements and make the operation of the alignment system more reliable. For that purpose and also for their general maintenance and recalibration, the alignment components will be transferred to the Alignment Lab situated in the ISR area. For the track-based alignment, attention is focused on the determination of systematic uncertainties, which have become dominant, since now there is a large statistics of muon tracks. This will allow for an improved Monte Carlo misalignment scenario and updated alignment position errors, crucial for high-momentum muon analysis such as Z′ searches.

  1. L’âme, prison du corps ? À propos d’un détail du Theophilus in carcere

    Directory of Open Access Journals (Sweden)

    Eric Méchoulan

    2011-12-01

    Full Text Available En reprenant la suggestion de Michel Foucault sur « l’âme, prison du corps » qui renverse la conception classique, on peut analyser un détail du Theophilus in carcere de Théophile de Viau (la référence surprenante à Danaé, vue plutôt comme sexuellement douteuse, alors qu’il est accusé de mauvais usage du sexe comme exemplaire de cette production d’âme dans un écrit de prison, permettant ainsi de capturer/captiver ses juges. L’âme naît alors des procédures de surveillance et de capture qui cherchent à en déchiffrer les figures, changeant le corps en archive de soi.Following Michel Foucault’s suggestion about the “soul, prison of the body”, which inverses the traditional conception of the body as prison of the soul, I will scrutinize a detail of Viau’s Theophilus in carcere (the astonishing reference to Danae that permits him paradoxically to capture/ captivate his judges. This detail is exemplary of the way surveillance and enprisonment produces a “soul”, which transforms one’s body into an archive of one’s self.

  2. Historique du Web

    CERN Multimedia

    TV8 Mont-Blanc

    1995-01-01

    Documentaire court qui retrace l'implication de différentes personalités à la création du Web. Entrevues avec Robert Cailliau, Chris Llewellyn-Smith, David Williams, Tim Berners-Lee, Mike Sendall, Brian Carpenter.

  3. La foret du Banco

    NARCIS (Netherlands)

    Koning, de J.

    1983-01-01

    Deze publicatie over het Nationaal Park 'La Forêt du Banco' nabij Abidjan, Ivoorkust, verschijnt als resultaat van vier jaar veldwerk (1972-1976) in dat land.Het Centre Néerlandais, onderzoeks- en stageverblijf van de Landbouwhogeschool, was basis en de faciliteiten verleend door het Franse ORSTOM-i

  4. Origine du vieux slave

    Directory of Open Access Journals (Sweden)

    Witold Mańczak

    2005-12-01

    Full Text Available Comme, pour prouver l'identité du vieux slave et du vieux bulgare, on invoque uniquement des critères phonétiques, rappelons que l'orientaliste allemand du XVIIe siècle Ludolf affirmait déjà que "die Sprachverwandtschaft offenbart sich nicht im Wörterbuch, sondern in der Grammatik"3. Pendant les 300 dernières années, tellement d'autorites ant approuvé !l’opinion de Ludolf qu'elle est devenue un dogme de la linguistique. Pourtant il nous est venu à l'esprit de le confronter avec des faits et ainsi nous sommes arrivé à la conclusion qu'en réalité, c'est le vocabulaire (et non la phonétique et la flexion qui décide du degre de la parenté des langues4. Voici des arguments à l'appui de cette thèse.

  5. Integration of photodetectors with lasers for optical interconnects using 200 mm waferscale III-V/SOI technology

    DEFF Research Database (Denmark)

    Spuesens, Thijs; Liu, Liu; Vermeulen, Diedrik;

    2011-01-01

    We demonstrate efficient photodetectors on top of a laser epitaxial structure completely fabricated using 200 mm wafer scale III-V/SOI technology enabling very dense integration of lasers and detectors for optical interconnect circuits....

  6. Analysis of Voltage Transfer Characteristics of Nano-scale SOI CMOS Inverter with Variable Channel Length and Doping Concentration

    Directory of Open Access Journals (Sweden)

    A. Daniyel Raj

    2015-03-01

    Full Text Available During many decades, continuous device performance improvement has been made possible only through device scaling. But presently, due to aggressive scaling at the sub-micron or nanometer region, the conventional planner silicon technology is suffering from the fundamental physical limits. Such imposed limits on further downscaling of silicon planner technology have lead to alternative device technology like Silicon-On-Insulator (SOI technology. Due-to some of its inherent advantages, the Silicon-On-Insulator (SOI technology has reduced the Short-channel-effects (SCEs and thus increased transistor scalability. Till now, intense research interests have been paid in practical fabrication and theoretical modeling of SOI MOSFETs but a little attention has been paid to understand the circuit level performance improvement with nano-scale SOI MOSFETs. The circuit level performance analysis of SOI MOSFET is highly essential to understand the impact of SOI technology on next level VLSI circuit and chip design and for doing so device compact models are high on demand. In such scenario, under present research, a physics based compact device model of SOI MOSFET has been developed. At the first phase of the compact model development, a physics based threshold voltage model has been developed by solving 2-D Poisson’s equation at the channel region and at the second phase, a current-voltage model has been developed with drift-diffusion analysis. Different SCEs, valid at nano-scale, are effectively incorporated in threshold voltage and Current-Voltage model. At the third phase, using the compact model, the Voltage Transfer Characteristics (VTC for a nano-scale SOI CMOS inverter has been derived with graphical analysis. The impacts of different device parameters e.g.; channel length and channel doping concentration on VTC has been investigated through simulation and the results have been analyzed.

  7. A 10 Gs/s latched comparator with dynamic offset cancellation in 28nm FD-SOI process

    Science.gov (United States)

    Jaworski, Zbigniew

    2016-12-01

    This papers presents a high-speed, latched comparator implemented in industrial 28 nm FD-SOI technology. A novel approach to counter the mismatch is proposed. The solution employs trimming the threshold voltage by means of modulating of back-gate polarization of FD-SOI transistors. The comparator is a first step towards the design of a complete 4-bit FLASH analog-to-digital converter, with a sampling frequency of 10 GHz.

  8. Daphne Du Maurier’s Transformation of Jane Eyre in Rebecca La Transformation de Jane Eyre dans Rebeccade Daphne Du Maurier

    Directory of Open Access Journals (Sweden)

    Bernadette Bertrandias

    2009-10-01

    Full Text Available Cet article examine la transformation, dans Rebecca, du mythos que constitue dans Jane Eyre, la triade Jane/Rochester et Bertha Mason. Si l’autre femme fait figure ici d’obstacle à l’aboutissement de la quête de bonheur et de réalisation de soi de l’héroïne, son élimination opportune rend celui-ci finalement possible. Dans Rebecca, en revanche, la figure fascinante et complexe de l’autre femme est riche d’ambivalence et suscite chez la jeune héroïne narratrice qui l’a remplacée un désir d’exploration, puis d’identification, aboutissant finalement à une appropriation qui lui livrera plein accès à la maîtrise de sa destinée tout comme à son autonomie de sujet écrivant.

  9. A Lateral Differential Resonant Pressure Microsensor Based on SOI-Glass Wafer-Level Vacuum Packaging.

    Science.gov (United States)

    Xie, Bo; Xing, Yonghao; Wang, Yanshuang; Chen, Jian; Chen, Deyong; Wang, Junbo

    2015-09-21

    This paper presents the fabrication and characterization of a resonant pressure microsensor based on SOI-glass wafer-level vacuum packaging. The SOI-based pressure microsensor consists of a pressure-sensitive diaphragm at the handle layer and two lateral resonators (electrostatic excitation and capacitive detection) on the device layer as a differential setup. The resonators were vacuum packaged with a glass cap using anodic bonding and the wire interconnection was realized using a mask-free electrochemical etching approach by selectively patterning an Au film on highly topographic surfaces. The fabricated resonant pressure microsensor with dual resonators was characterized in a systematic manner, producing a quality factor higher than 10,000 (~6 months), a sensitivity of about 166 Hz/kPa and a reduced nonlinear error of 0.033% F.S. Based on the differential output, the sensitivity was increased to two times and the temperature-caused frequency drift was decreased to 25%.

  10. Superconducting nanowire single-photon detectors (SNSPDs) on SOI for near-infrared range

    Energy Technology Data Exchange (ETDEWEB)

    Trojan, Philipp; Il' in, Konstantin; Henrich, Dagmar; Hofherr, Matthias; Doerner, Steffen; Siegel, Michael [Institut fuer Mikro- und Nanoelektronische Systeme (IMS), Karlsruher Institut fuer Technologie (KIT) (Germany); Semenov, Alexey [Institut fuer Planetenforschung, DLR, Berlin-Adlershof (Germany); Huebers, Heinz-Wilhelm [Institut fuer Planetenforschung, DLR, Berlin-Adlershof (Germany); Institut fuer Optik und Atomare Physik, Technische Universitaet Berlin (Germany)

    2013-07-01

    Superconducting nanowire single-photon detectors are promising devices for photon detectors with high count rates, low dark count rates and low dead times. At wavelengths beyond the visible range, the detection efficiency of today's SNSPDs drops significantly. Moreover, the low absorption in ultra-thin detector films is a limiting factor over the entire spectral range. Solving this problem requires approaches for an enhancement of the absorption range in feeding the light to the detector element. A possibility to obtain a better absorption is the use of multilayer substrate materials for photonic waveguide structures. We present results on development of superconducting nanowire single-photon detectors made from niobium nitride on silicon-on-insulator (SOI) multilayer substrates. Optical and superconducting properties of SNSPDs on SOI will be discussed and compared with the characteristics of detectors on common substrates.

  11. Anomalous DIBL Effect in Fully Depleted SOI MOSFETs Using Nanoscale Gate-Recessed Channel Process

    Directory of Open Access Journals (Sweden)

    Avi Karsenty

    2015-01-01

    Full Text Available Nanoscale Gate-Recessed Channel (GRC Fully Depleted- (FD- SOI MOSFET device with a silicon channel thickness (tSi as low as 2.2 nm was first tested at room temperature for functionality check and then tested at low temperature (77 K for I-V characterizations. In spite of its FD-SOI nanoscale thickness and long channel feature, the device has surprisingly exhibited a Drain-Induced Barrier Lowering (DIBL effect at RT. However, this effect was suppressed at 77 K. If the apparition of such anomalous effect can be explained by a parasitic short channel transistor located at the edges of the channel, its suppression is explained by the decrease of the potential barrier between the drain and the channel when lowering the temperature.

  12. A Monolithic High-G SOI-MEMS Accelerometer for Measuring Projectile Launch and Flight Accelerations

    Directory of Open Access Journals (Sweden)

    Bradford S. Davis

    2006-01-01

    Full Text Available Analog Devices (ADI has designed and fabricated a monolithic high-g acceleration sensor (ADXSTC3-HG fabricated with the ADI silicon-on-insulator micro-electro-mechanical system (SOI-MEMS process. The SOI-MEMS sensor structure has a thickness of 10 um, allowing for the design of inertial sensors with excellent cross-axis rejection. The high-g accelerometer discussed in this paper was designed to measure in-plane acceleration to 10,000 g while subjected to 100,000 g in the orthogonal axes. These requirements were intended to meet Army munition applications. The monolithic sensor was packaged in an 8-pin leadless chip carrier (LCC-8 and was successfully demonstrated by the US Army Research Laboratory (ARL as part of an inertial measurement unit during an instrumented flight experiment of artillery projectiles launched at 15,000 g.

  13. Total dose radiation effects of pressure sensors fabricated on Unibond-SOI materials

    Institute of Scientific and Technical Information of China (English)

    2001-01-01

    Piezoresistive pressure sensors with a twin-island structure were suc cessfully fabricated using high quality Unibond-SOI (On Insulator) materials. Since the piezoresistors were structured by the single crystalline silicon overlayer of the SOI wafer and were totally isolated by the buried SiO2, the sensors are radiation-hard. The sensitivity and the linearity of the pressure sensors keep their original values after being irradiated by 60Co γ-rays up to 2.3 × 104 Gy (H2O). However, the offset voltage of the sensor has a slight drift, increasing with the radiation dose. The absolute walue of the offset voltage deviation depends on the pressure sensor itself. For comparison, corresponding polysilicon pressure sensors were fabricated using the similar process and irradiated at the same condition.

  14. [SOI-nanowire biosensor for the detection of D-NFAT 1 protein].

    Science.gov (United States)

    Malsagova, K A; Ivanov, Yu D; Pleshakova, T O; Kozlov, A F; Krohin, N V; Kaysheva, A L; Shumov, I D; Popov, V P; Naumova, O V; Fomin, B I; Nasimov, D A

    2015-01-01

    The nanowire (NW) detection is one of fast-acting and high-sensitive methods allowing to reveal potentially relevant protein molecules. A NW biosensor based on the silicon-on-insulator (SOI)-structures was used for biospecific label-free detection of NFAT 1 (D-NFAT 1) oncomarker in real time. For this purpose, SOI-nanowires (NWs) were modified with aptamers against NFAT 1 used as molecular probes. It was shown that using this biosensor it is possible to reach the sensitivity of ~10(-15) M. This sensitivity was comparable with that of the NW biosensor with immobilized antibodies used as macromolecular probes. The results demonstrate promising approaches used to form the sensor elements for high-sensitive disease diagnostics.

  15. Room to high temperature measurements of flexible SOI FinFETs with sub-20-nm fins

    KAUST Repository

    Diab, Amer El Hajj

    2014-12-01

    We report the temperature dependence of the core electrical parameters and transport characteristics of a flexible version of fin field-effect transistor (FinFET) on silicon-on-insulator (SOI) with sub-20-nm wide fins and high-k/metal gate-stacks. For the first time, we characterize them from room to high temperature (150 °C) to show the impact of temperature variation on drain current, gate leakage current, and transconductance. Variation of extracted parameters, such as low-field mobility, subthreshold swing, threshold voltage, and ON-OFF current characteristics, is reported too. Direct comparison is made to a rigid version of the SOI FinFETs. The mobility degradation with temperature is mainly caused by phonon scattering mechanism. The overall excellent devices performance at high temperature after release is outlined proving the suitability of truly high-performance flexible inorganic electronics with such advanced architecture.

  16. Electron Pattern Recognition using trigger mode SOI pixel sensor for Advanced Compton Imaging

    Science.gov (United States)

    Shimazoe, K.; Yoshihara, Y.; Fairuz, A.; Koyama, A.; Takahashi, H.; Takeda, A.; Tsuru, T.; Arai, Y.

    2016-02-01

    Compton imaging is a useful method for localizing sub MeV to a few MeV gamma-rays and widely used for environmental and medical applications. The direction of recoiled electrons in Compton scattering process provides the additional information to limit the Compton cones and increases the sensitivity in the system. The capability of recoiled electron tracking using trigger-mode Silicon-On-Insulator (SOI) sensor is investigated with various radiation sources. The trigger-mode SOI sensor consists of 144 by 144 active pixels with 30 μm cells and the thickness of sensor is 500 μm. The sensor generates the digital output when it is hit by gamma-rays and 25 by 25 pixel pattern of surrounding the triggered pixel is readout to extract the recoiled electron track. The electron track is successfully observed for 60Co and 137Cs sources, which provides useful information for future electron tracking Compton camera.

  17. SEMICONDUCTOR DEVICES Process optimization of a deep trench isolation structure for high voltage SOI devices

    Science.gov (United States)

    Kuiying, Zhu; Qinsong, Qian; Jing, Zhu; Weifeng, Sun

    2010-12-01

    The process reasons for weak point formation of the deep trench on SOI wafers have been analyzed in detail. An optimized trench process is also proposed. It is found that there are two main reasons: one is over-etching laterally of the silicon on the surface of the buried oxide caused by a fringe effect; and the other is the slow growth rate of the isolation oxide in the concave silicon corner of the trench bottom. In order to improve the isolation performance of the deep trench, two feasible ways for optimizing the trench process are proposed. The improved process thickens the isolation oxide and rounds sharp silicon corners at their weak points, increasing the applied voltage by 15-20 V at the same leakage current. The proposed new trench isolation process has been verified in the foundry's 0.5-μm HV SOI technology.

  18. Ontology alignment with OLA

    OpenAIRE

    Euzenat, Jérôme; Loup, David; Touzani, Mohamed; Valtchev, Petko

    2004-01-01

    euzenat2004d; International audience; Using ontologies is the standard way to achieve interoperability of heterogeneous systems within the Semantic web. However, as the ontologies underlying two systems are not necessarily compatible, they may in turn need to be aligned. Similarity-based approaches to alignment seems to be both powerful and flexible enough to match the expressive power of languages like OWL. We present an alignment tool that follows the similarity-based paradigm, called OLA. ...

  19. Comparison of Three Dimensional Partially and Fully Depleted SOI MOSFET Characteristics Using Mathcad

    Directory of Open Access Journals (Sweden)

    Neha Goel

    2016-03-01

    Full Text Available In this Paper, comparison of three Dimensional characteristics between partially and fully depleted Silicon-On-Insulator (SOI MOSFET is presented, this is done through 3D device modeling using mathcad, based on the numerical solution of three dimensional Poisson’s equation. Behavior of Various Parameters like Surface Potential, Threshold Voltage, Electric field and Drain current are presented in this paper.

  20. Development of a CMOS Oscillator Chain for Particle Detection based on SOI technology

    Energy Technology Data Exchange (ETDEWEB)

    Coulie-Castellani, K.; Ben Krit, S.; Rahajandraibe, W.; Aziza, H.; Portal, J-M. [Aix Marseille Universite, CNRS, Universite de Toulon, IM2NP UMR 7334, Marseille (France); Micolau, G. [Universite d' Avignon, UMR 1114 EMMAH, INRA-UAPV, Avignon (France)

    2015-07-01

    A new development of an oscillator concept, dedicated to the detection and tracking of particles with low fluxes, is presented. The solution is based on an indirect detection of the current generated at the input of the detection chain, through a Voltage Controlled Oscillator (VCO) response. The very first solution was proposed using bulk technology. This new development is based on SOI technology what makes it tolerant to radiations. (authors)

  1. Subthreshold current model of fully depleted dual material gate SOI MOSFET

    Institute of Scientific and Technical Information of China (English)

    2007-01-01

    Dual material gate SOI MOSFET with asymmetrical halo can suppress short channel effect and increase carriers transport efficiency. The analytical model of its subthreshold drain current is derived based on the explicit solution of two-dimensional Poisson's equation in the depletion region. The model takes into consideration the channel length modulation effect and the contribution of the back channel current component. Its validation is verified by comparision with two dimensional device simulator MEDICI.

  2. 300 nm bandwidth adiabatic SOI polarization splitter-rotators exploiting continuous symmetry breaking.

    Science.gov (United States)

    Socci, Luciano; Sorianello, Vito; Romagnoli, Marco

    2015-07-27

    Adiabatic polarization splitter-rotators are investigated exploiting continuous symmetry breaking thereby achieving significant device size and losses reduction in a single mask fabrication process for both SOI channel and ridge waveguides. A crosstalk lower than -25 dB is expected over 300nm bandwidth, making the device suitable for full grid CWDM and diplexer/triplexer FTTH applications at 1310, 1490 and 1550nm.

  3. Tidal alignment of galaxies

    Energy Technology Data Exchange (ETDEWEB)

    Blazek, Jonathan; Vlah, Zvonimir; Seljak, Uroš

    2015-08-01

    We develop an analytic model for galaxy intrinsic alignments (IA) based on the theory of tidal alignment. We calculate all relevant nonlinear corrections at one-loop order, including effects from nonlinear density evolution, galaxy biasing, and source density weighting. Contributions from density weighting are found to be particularly important and lead to bias dependence of the IA amplitude, even on large scales. This effect may be responsible for much of the luminosity dependence in IA observations. The increase in IA amplitude for more highly biased galaxies reflects their locations in regions with large tidal fields. We also consider the impact of smoothing the tidal field on halo scales. We compare the performance of this consistent nonlinear model in describing the observed alignment of luminous red galaxies with the linear model as well as the frequently used "nonlinear alignment model," finding a significant improvement on small and intermediate scales. We also show that the cross-correlation between density and IA (the "GI" term) can be effectively separated into source alignment and source clustering, and we accurately model the observed alignment down to the one-halo regime using the tidal field from the fully nonlinear halo-matter cross correlation. Inside the one-halo regime, the average alignment of galaxies with density tracers no longer follows the tidal alignment prediction, likely reflecting nonlinear processes that must be considered when modeling IA on these scales. Finally, we discuss tidal alignment in the context of cosmic shear measurements.

  4. MUON DETECTORS: ALIGNMENT

    CERN Multimedia

    G.Gomez

    2010-01-01

    Most of the work in muon alignment since December 2009 has focused on the geometry reconstruction from the optical systems and improvements in the internal alignment of the DT chambers. The barrel optical alignment system has progressively evolved from reconstruction of single active planes to super-planes (December 09) to a new, full barrel reconstruction. Initial validation studies comparing this full barrel alignment at 0T with photogrammetry provide promising results. In addition, the method has been applied to CRAFT09 data, and the resulting alignment at 3.8T yields residuals from tracks (extrapolated from the tracker) which look smooth, suggesting a good internal barrel alignment with a small overall offset with respect to the tracker. This is a significant improvement, which should allow the optical system to provide a start-up alignment for 2010. The end-cap optical alignment has made considerable progress in the analysis of transfer line data. The next set of alignment constants for CSCs will there...

  5. Density dependence of electron mobility in the accumulation mode for fully depleted SOI films

    Energy Technology Data Exchange (ETDEWEB)

    Naumova, O. V., E-mail: naumova@isp.nsc.ru; Zaitseva, E. G.; Fomin, B. I.; Ilnitsky, M. A.; Popov, V. P. [Russian Academy of Sciences, Rzhanov Institute of Semiconductor Physics, Siberian Branch (Russian Federation)

    2015-10-15

    The electron mobility µ{sub eff} in the accumulation mode is investigated for undepleted and fully depleted double-gate n{sup +}–n–n{sup +} silicon-on-insulator (SOI) metal–oxide–semiconductor field-effect transistors (MOSFET). To determine the range of possible values of the mobility and the dominant scattering mechanisms in thin-film structures, it is proposed that the field dependence of the mobility µ{sub eff} be replaced with the dependence on the density N{sub e} of induced charge carriers. It is shown that the dependences µ{sub eff}(N{sub e}) can be approximated by the power functions µ{sub eff}(N{sub e}) ∝ N{sub e}{sup -n}, where the exponent n is determined by the chargecarrier scattering mechanism as in the mobility field dependence. The values of the exponent n in the dependences µ{sub eff}(N{sub e}) are determined when the SOI-film mode near one of its surfaces varies from inversion to accumulation. The obtained results are explained from the viewpoint of the electron-density redistribution over the SOI-film thickness and changes in the scattering mechanisms.

  6. Fully Integrated, Miniature, High-Frequency Flow Probe Utilizing MEMS Leadless SOI Technology

    Science.gov (United States)

    Ned, Alex; Kurtz, Anthony; Shang, Tonghuo; Goodman, Scott; Giemette. Gera (d)

    2013-01-01

    This work focused on developing, fabricating, and fully calibrating a flowangle probe for aeronautics research by utilizing the latest microelectromechanical systems (MEMS), leadless silicon on insulator (SOI) sensor technology. While the concept of angle probes is not new, traditional devices had been relatively large due to fabrication constraints; often too large to resolve flow structures necessary for modern aeropropulsion measurements such as inlet flow distortions and vortices, secondary flows, etc. Mea surements of this kind demanded a new approach to probe design to achieve sizes on the order of 0.1 in. (.3 mm) diameter or smaller, and capable of meeting demanding requirements for accuracy and ruggedness. This approach invoked the use of stateof- the-art processing techniques to install SOI sensor chips directly onto the probe body, thus eliminating redundancy in sensor packaging and probe installation that have historically forced larger probe size. This also facilitated a better thermal match between the chip and its mount, improving stability and accuracy. Further, the leadless sensor technology with which the SOI sensing element is fabricated allows direct mounting and electrical interconnecting of the sensor to the probe body. This leadless technology allowed a rugged wire-out approach that is performed at the sensor length scale, thus achieving substantial sensor size reductions. The technology is inherently capable of high-frequency and high-accuracy performance in high temperatures and harsh environments.

  7. Features of SOI substrates heating in MBE growth process obtained by low-coherence tandem interferometry

    Science.gov (United States)

    Volkov, P. V.; Goryunov, A.. V.; Lobanov, D. N.; Luk'yanov, A. Yu.; Novikov, A. V.; Tertyshnik, A. D.; Shaleev, M. V.; Yurasov, D. V.

    2016-08-01

    Differences in heating of silicon and silicon-on-insulator (SOI) substrates in molecular beam epitaxy were revealed by low-coherence tandem interferometry. Using this technique the interference effects which impede the correct evaluation of SOI substrate temperature by infrared pyrometers can be eliminated and so the reliable temperature readout can be achieved. It was shown that at the same thermocouple and heater power settings the real temperature of SOI substrates is higher than of silicon ones and the difference may be as high as 40-50 °C at temperatures close to 600 °C. It is supposed that such effect is caused by the additional absorption of heater radiation by the buried oxide layer in the mid-infrared range. Independent proof of this effect was obtained by growing on both types of substrates a series of structures with self-assembled Ge nanoislands whose parameters are known to be very temperature sensitive. The proposed low-coherence interferometry technique provides precise real-time control of the growth temperature and so allows formation of SiGe nanostructures with desired parameters.

  8. A Three-Dimensional DRAM Using Floating Body Capacitance Cells in an FD-SOI Process

    Directory of Open Access Journals (Sweden)

    Xuelian Liu

    2013-12-01

    Full Text Available This paper describes a three- dimensional DRAM in which the floating body capacitance (FBC of a fully depleted SOI (FD-SOI device is used as a storage node. This 1T DRAM lends itself particularly well to a 3D wafer-to-wafer bonding process because of the absence of deep etched and filled trench capacitor structure, and the improved thickness control tolerance in wafer thinning. A novel three-tier, 3D, 1T embedded DRAM is presented that can be vertically integrated with a microprocessor, achieving low cost, high-density on-chip main memory. A 394Kbits test chip has been designed and fabricated using the Lincoln Labs 3-Tier 3D 0.18um fully depleted SOI CMOS process where an earlier (and previously reported successful 3D SRAM was obtained. The measured retention time under holding conditions in this 180 nm process is greater than 10 ms. The test chip measures an access time of 50 ns and operates at 10 MHz.

  9. Comparative study of NSB and UTB SOI MOSFETs characteristics by extraction of series resistance

    Science.gov (United States)

    Karsenty, A.; Chelly, A.

    2014-01-01

    The electrical characteristics of two kinds of n-type SOI-MOSFETs are analyzed and compared in order to build a consistent model. The first kind is an Ultra-Thin Body (UTB) device for which the channel thickness is equal to the initial SOI wafer thickness value (here 46 nm). The second kind is what we refer to Nano-Scale Body (NSB) device for which the initial SOI channel is thinned down to 1.6 nm using a recessed-gate process. The drain current values were found surprisingly different by three orders of magnitude. Such a huge contrast was not found coherent with the literature, reporting the decrease of the electron mobility with the channel thickness. We interpret our result by the probable influence of an extreme drain-to-source series resistance rather than by vanishing carrier mobility. The interpretation is sustained experimentally by the Rm-L and C-V methods. By integrating a gate-voltage dependence to the series resistance, the linear and saturation regions of the output characteristics of the NSB can be analytically derived from the UTB ones. This simple modeling approach may be useful to interpret anomalous electrical behavior of other nano-devices in which series resistance is of a great concern.

  10. A Temperature Sensor using a Silicon-on-Insulator (SOI) Timer for Very Wide Temperature Measurement

    Science.gov (United States)

    Patterson, Richard L.; Hammoud, Ahmad; Elbuluk, Malik; Culley, Dennis E.

    2008-01-01

    A temperature sensor based on a commercial-off-the-shelf (COTS) Silicon-on-Insulator (SOI) Timer was designed for extreme temperature applications. The sensor can operate under a wide temperature range from hot jet engine compartments to cryogenic space exploration missions. For example, in Jet Engine Distributed Control Architecture, the sensor must be able to operate at temperatures exceeding 150 C. For space missions, extremely low cryogenic temperatures need to be measured. The output of the sensor, which consisted of a stream of digitized pulses whose period was proportional to the sensed temperature, can be interfaced with a controller or a computer. The data acquisition system would then give a direct readout of the temperature through the use of a look-up table, a built-in algorithm, or a mathematical model. Because of the wide range of temperature measurement and because the sensor is made of carefully selected COTS parts, this work is directly applicable to the NASA Fundamental Aeronautics/Subsonic Fixed Wing Program--Jet Engine Distributed Engine Control Task and to the NASA Electronic Parts and Packaging (NEPP) Program. In the past, a temperature sensor was designed and built using an SOI operational amplifier, and a report was issued. This work used an SOI 555 timer as its core and is completely new work.

  11. A Demonstrator Analog Signal Processing Circuit in a Radiation Hard SOI-CMOS Technology

    CERN Multimedia

    2002-01-01

    % RD-9 A Demonstrator Analog Signal Processing Circuit in a Radiation Hard SOI-CMOS Technology \\\\ \\\\Radiation hardened SOI-CMOS (Silicon-On-Insulator, Complementary Metal-Oxide- \\linebreak Semiconductor planar microelectronic circuit technology) was a likely candidate technology for mixed analog-digital signal processing electronics in experiments at the future high luminosity hadron colliders. We have studied the analog characteristics of circuit designs realized in the Thomson TCS radiation hard technologies HSOI3-HD. The feature size of this technology was 1.2 $\\mu$m. We have irradiated several devices up to 25~Mrad and 3.10$^{14}$ neutrons cm$^{-2}$. Gain, noise characteristics and speed have been measured. Irradiation introduces a degradation which in the interesting bandwidth of 0.01~MHz~-~1~MHz is less than 40\\%. \\\\ \\\\Some specific SOI phenomena have been studied in detail, like the influence on the noise spectrum of series resistence in the thin silicon film that constitutes the body of the transistor...

  12. Operation of Silicon-on-Insulator (SOI) Micro-ElectroMechanical Systems (MEMS) Gyroscopic Sensor as a Two-Axis Accelerometer

    Science.gov (United States)

    2012-04-01

    TECHNICAL REPORT RDMR-WS-12-02 OPERATION OF SILICON-ON-INSULATOR (SOI) MICRO-ELECTROMECHANICAL SYSTEMS ( MEMS ) GYROSCOPIC SENSOR...DATES COVERED Final 4. TITLE AND SUBTITLE Operation of Silicon-on-Insulator (SOI) Micro-ElectroMechanical Systems ( MEMS ) Gyroscopic Sensor as a...existing Silicon-on-Insulator (SOI) Micro- ElectroMechanical Systems ( MEMS ) gyroscopic sensor previously developed in the early-2000s under MEMS

  13. Aux origines du monde

    CERN Multimedia

    2004-01-01

    "C'est l'histoire d'une aventure humaine, scientifique, international qui a vu le jour il y a cinquante ans, aux confins de la Suisse et du département de l'Ain. Le plus grand laboratoire de physique des particules du monde, le Cern, a été fondé en 1954. Les festivités organisées à l occasion de cet anniversaire connaîtront leur point d'orgue le 16 octobre prochain, avec portes-ouvertes, accueil de personallités et inauguration d'un monumnet spécifique, le Globe de l'innovation" (2 pages)

  14. Images du Valais

    Directory of Open Access Journals (Sweden)

    Micheline COSINSCHI

    1995-06-01

    Full Text Available Une étude des revenus fiscaux ventilés par branches économiques permet de clore un ouvrage portant sur ce canton alpin suisse par excellence qu’est le Valais. Pris comme traceurs de l’activité régionale, l’analyse de leurs configurations spatiales permet une évaluation pouvant être considérée comme une mesure de l’efficacité différentielle du système socio-spatial valaisan. L’article décrit certains processus qui ont permis la réalisation du dernier chapitre d’un atlas portant sur le Valais.

  15. CHOEUR DU CERN

    CERN Multimedia

    CHOEUR DU CERN

    2010-01-01

    Les répétitions du chœur du CERN reprendront le mercredi 15 septembre à 20.00 heures à l’amphithéâtre principal – bâtiment 500. Au programme la préparation de notre concert de Noël avec la Missa Brevis, KV115, de Léopold Mozart et de la musique de Noël d’Europe. Les personnes qui aiment chanter, notamment des sopranes et des ténors, sont les bienvenues. Pour tout contact s’adresser à : Baudouin Bleus - (tél.CERN 767 82 44) -(baudouin.bleus@cern.ch) ou Martin Gatehouse ( martin.gatehouse@wanadoo.fr) ou Jean-Paul Diss (jean-pauldiss@wanadoo.fr).  

  16. Les Cahiers du CREAD

    African Journals Online (AJOL)

    Admin

    les littératures économique et gestionnaire, mais souvent dans ces travaux, l'effet de ... chiffre d'affaires du nouvel ensemble résultant de la vente des produits mieux .... syndicalisme, droit de grève), fiscales (différents taux d'imposition, etc.) .... nouvel ensemble et aussi, les différentes relations avec les alliances verticales ...

  17. La mesure du danger

    CERN Document Server

    Manceron, Vanessa; Revet, Sandrine

    2014-01-01

    La mesure du danger permet d’explorer des dangers de nature aussi diverse que la délinquance, la pollution, l’écueil maritime, la maladie ou l’attaque sorcellaire, l’extinction d’espèces animales ou végétales, voire de la Planète tout entière. Au croisement de la sociologie, de l’anthropologie et de l’histoire, les différents articles analysent les pratiques concrètes de mesure pour tenter de comprendre ce qui se produit au cours de l’opération d’évaluation du danger sans préjuger de la nature de celui-ci. L’anthropologie a contribué à la réflexion sur l’infortune en s’intéressant aux temporalités de l’après : maladies, catastrophes, pandémies, etc. et en cherchant à rendre compte de l’expérience des victimes, de leur vie ordinaire bouleversée, de la recomposition du quotidien. Elle s’intéresse aussi aux autres types de mesures, les savoirs incorporés, qui reposent sur l’odorat, la vue ou le toucher et ceux qui ressortent d’une épistémologie « non ...

  18. MUON DETECTORS: ALIGNMENT

    CERN Multimedia

    G. Gomez

    Since December, the muon alignment community has focused on analyzing the data recorded so far in order to produce new DT and CSC Alignment Records for the second reprocessing of CRAFT data. Two independent algorithms were developed which align the DT chambers using global tracks, thus providing, for the first time, a relative alignment of the barrel with respect to the tracker. These results are an important ingredient for the second CRAFT reprocessing and allow, for example, a more detailed study of any possible mis-modelling of the magnetic field in the muon spectrometer. Both algorithms are constructed in such a way that the resulting alignment constants are not affected, to first order, by any such mis-modelling. The CSC chambers have not yet been included in this global track-based alignment due to a lack of statistics, since only a few cosmics go through the tracker and the CSCs. A strategy exists to align the CSCs using the barrel as a reference until collision tracks become available. Aligning the ...

  19. MUON DETECTORS: ALIGNMENT

    CERN Multimedia

    Gervasio Gomez

    The main progress of the muon alignment group since March has been in the refinement of both the track-based alignment for the DTs and the hardware-based alignment for the CSCs. For DT track-based alignment, there has been significant improvement in the internal alignment of the superlayers inside the DTs. In particular, the distance between superlayers is now corrected, eliminating the residual dependence on track impact angles, and good agreement is found between survey and track-based corrections. The new internal geometry has been approved to be included in the forthcoming reprocessing of CRAFT samples. The alignment of DTs with respect to the tracker using global tracks has also improved significantly, since the algorithms use the latest B-field mapping, better run selection criteria, optimized momentum cuts, and an alignment is now obtained for all six degrees of freedom (three spatial coordinates and three rotations) of the aligned DTs. This work is ongoing and at a stage where we are trying to unders...

  20. MUON DETECTORS: ALIGNMENT

    CERN Multimedia

    G.Gomez

    2011-01-01

    The Muon Alignment work now focuses on producing a new track-based alignment with higher track statistics, making systematic studies between the results of the hardware and track-based alignment methods and aligning the barrel using standalone muon tracks. Currently, the muon track reconstruction software uses a hardware-based alignment in the barrel (DT) and a track-based alignment in the endcaps (CSC). An important task is to assess the muon momentum resolution that can be achieved using the current muon alignment, especially for highly energetic muons. For this purpose, cosmic ray muons are used, since the rate of high-energy muons from collisions is very low and the event statistics are still limited. Cosmics have the advantage of higher statistics in the pT region above 100 GeV/c, but they have the disadvantage of having a mostly vertical topology, resulting in a very few global endcap muons. Only the barrel alignment has therefore been tested so far. Cosmic muons traversing CMS from top to bottom are s...

  1. Har du sikret din alderdom?

    DEFF Research Database (Denmark)

    Kiens, Bente; Aagaard, Peter Gjerndrup

    2006-01-01

    Daglig fysisk aktivitet kan betragtes som indbetaling op din personlige helbredspension. Jo mere du sætter ind på kontoen, og jo oftere du gør det, jo større er sandsynligheden for, at du lever længere og får et sundere helbred. Og det er aldrig for sent at starte med indbetalingerne....

  2. Physics of Grain Alignment

    CERN Document Server

    Lazarian, A

    2000-01-01

    Aligned grains provide one of the easiest ways to study magnetic fields in diffuse gas and molecular clouds. How reliable our conclusions about the inferred magnetic field depends critically on our understanding of the physics of grain alignment. Although grain alignment is a problem of half a century standing recent progress achieved in the field makes us believe that we are approaching the solution of this mystery. I review basic physical processes involved in grain alignment and show why mechanisms that were favored for decades do not look so promising right now. I also discuss why the radiative torque mechanism ignored for more than 20 years looks right now the most powerful means of grain alignment.

  3. MUON DETECTORS: ALIGNMENT

    CERN Multimedia

    G. Gomez

    2011-01-01

    A new set of muon alignment constants was approved in August. The relative position between muon chambers is essentially unchanged, indicating good detector stability. The main changes concern the global positioning of the barrel and of the endcap rings to match the new Tracker geometry. Detailed studies of the differences between track-based and optical alignment of DTs have proven to be a valuable tool for constraining Tracker alignment weak modes, and this information is now being used as part of the alignment procedure. In addition to the “split-cosmic” analysis used to investigate the muon momentum resolution at high momentum, a new procedure based on reconstructing the invariant mass of di-muons from boosted Zs is under development. Both procedures show an improvement in the momentum precision of Global Muons with respect to Tracker-only Muons. Recent developments in track-based alignment include a better treatment of the tails of residual distributions and accounting for correla...

  4. SPEAR3 Construction Alignment

    Energy Technology Data Exchange (ETDEWEB)

    LeCocq, Catherine; Banuelos, Cristobal; Fuss, Brian; Gaudreault, Francis; Gaydosh, Michael; Griffin, Levirt; Imfeld, Hans; McDougal, John; Perry, Michael; Rogers,; /SLAC

    2005-08-17

    An ambitious seven month shutdown of the existing SPEAR2 synchrotron radiation facility was successfully completed in March 2004 when the first synchrotron light was observed in the new SPEAR3 ring, SPEAR3 completely replaced SPEAR2 with new components aligned on a new highly-flat concrete floor. Devices such as magnets and vacuum chambers had to be fiducialized and later aligned on girder rafts that were then placed into the ring over pre-aligned support plates. Key to the success of aligning this new ring was to ensure that the new beam orbit matched the old SPEAR2 orbit so that existing experimental beamlines would not have to be reoriented. In this presentation a pictorial summary of the Alignment Engineering Group's surveying tasks for the construction of the SPEAR3 ring is provided. Details on the networking and analysis of various surveys throughout the project can be found in the accompanying paper.

  5. Daphne Du Maurier’s Transformation of Jane Eyre in Rebecca

    OpenAIRE

    2009-01-01

    Cet article examine la transformation, dans Rebecca, du mythos que constitue dans Jane Eyre, la triade Jane/Rochester et Bertha Mason. Si l’autre femme fait figure ici d’obstacle à l’aboutissement de la quête de bonheur et de réalisation de soi de l’héroïne, son élimination opportune rend celui-ci finalement possible. Dans Rebecca, en revanche, la figure fascinante et complexe de l’autre femme est riche d’ambivalence et suscite chez la jeune héroïne narratrice qui l’a remplacée un désir d’exp...

  6. Les pirogues du Maroni

    Directory of Open Access Journals (Sweden)

    Sophie François

    2012-04-01

    Full Text Available Sur le Maroni, fleuve frontière entre la Guyane française et le Surinam, les pirogues amarrées le long des berges se comptent par centaines. Elles représentent le seul moyen de transport pour les milliers de personnes vivant sur les rives du Maroni. Les différentes formes de pirogues sont révélatrices de la diversité géographique du Maroni et de la diversité culturelle des populations. Les Amérindiens du littoral naviguent uniquement dans l’estuaire du fleuve. Ils construisent des pirogues larges, hautes et terminées à la poupe par une haute étrave qui fend les vagues. Ces pirogues sont construites à partir d’une coque monoxyle expansée et rehaussée d’un ou de deux bordages. En chauffant la grume évidée, le bois acquiert une certaine plasticité qui permet d’écarter les flancs et d’obtenir une coque très large à partir d’un arbre de faible diamètre. Les Bushinenge, populations d’origine africaine qui ont déserté les grandes plantations de la Guyane hollandaise dès le début du XVIIe siècle et se sont installées sur les deux rives du Maroni, ont développé des formes de pirogues adaptées au passage des sauts. Leurs pirogues, construites également en expansant la coque au feu, sont étroites et longues et possèdent des extrémités curvilignes qui dépassent largement au–dessus du bordage. Les longues pirogues à moteur comme les canots–pagaies sont ornés de motifs d’entrelacs appelés tembé ; et de décors d’inspiration contemporaine. L’inventaire des pirogues du Maroni a mis en évidence la richesse et la vitalité du patrimoine nautique de cette région au début du XXIe siècle, tant au niveau des formes des embarcations que des décors et des pratiques de navigation.On the Maroni river, natural border between French Guyana and the Surinam, canoes tied to the river banks can be counted by the hundreds. They are the only mean of transportation for thousands of people living along the

  7. Application of Silicon Selective Epitaxial Growth and Chemo-Mechanical Polishing to Bipolar and Soi Mosfet Devices.

    Science.gov (United States)

    Nguyen, Cuong Tan

    1994-01-01

    Polished Epitaxy, or the combination of silicon Selective Epitaxial Growth and Chemo-Mechanical Polishing, provides new flexibility in process and device design, including optimized isolation, planar active-area definition, low-capacitance contacts, and SOI thin films. In this work, Polished Epitaxy has been developed with particular effort on overcoming junction leakage problems widely reported in devices fabricated in similar processes. It was found that in addition to careful surface preparation and defect control in the selective epitaxy process, issues such as sidewall orientation, junction passivation, crystal annealing, and surface damage removal were equally important and needed to be addressed. Coupled with the proper processing steps, Polished Epitaxy was able to deliver material of comparable quality to bulk silicon, suitable for device applications. By growing epitaxy laterally over an oxide step followed by polishing, a pedestal structure was created in which a thin film of single-crystal silicon was formed over oxide. Serving as the extrinsic base contact to a T-Pedestal bipolar transistor device, this pedestal helped minimize the parasitic extrinsic-base-collector overlap capacitance. The cut-off frequency (f_ {T}) in a device with a 1.0-mu m wide emitter stripe was found to improve from 17GHz to 22GHz when the contact overlap was reduced from a more conventional, larger size of 1.0 mu m to 0.2 mum. It is expected that the high-frequency performance of this structure can still be improved further in an optimized process with reduced emitter and collector resistances. The same pedestal structure was applied to a Pedestal -SOI (Silicon-On-Insulator) MOSFET device concept. At one extreme, a conventional bulk MOSFET structure is obtained when the pedestal is not utilized; quasi-SOI occurs when the drain and part of the channel overlap with the pedestal over buried oxide; at the other extreme, complete-SOI behavior results when source, channel, and drain

  8. Galaxy alignments: An overview

    CERN Document Server

    Joachimi, Benjamin; Kitching, Thomas D; Leonard, Adrienne; Mandelbaum, Rachel; Schäfer, Björn Malte; Sifón, Cristóbal; Hoekstra, Henk; Kiessling, Alina; Kirk, Donnacha; Rassat, Anais

    2015-01-01

    The alignments between galaxies, their underlying matter structures, and the cosmic web constitute vital ingredients for a comprehensive understanding of gravity, the nature of matter, and structure formation in the Universe. We provide an overview on the state of the art in the study of these alignment processes and their observational signatures, aimed at a non-specialist audience. The development of the field over the past one hundred years is briefly reviewed. We also discuss the impact of galaxy alignments on measurements of weak gravitational lensing, and discuss avenues for making theoretical and observational progress over the coming decade.

  9. Discriminative Shape Alignment

    DEFF Research Database (Denmark)

    Loog, M.; de Bruijne, M.

    2009-01-01

    The alignment of shape data to a common mean before its subsequent processing is an ubiquitous step within the area shape analysis. Current approaches to shape analysis or, as more specifically considered in this work, shape classification perform the alignment in a fully unsupervised way......, not taking into account that eventually the shapes are to be assigned to two or more different classes. This work introduces a discriminative variation to well-known Procrustes alignment and demonstrates its benefit over this classical method in shape classification tasks. The focus is on two......-dimensional shapes from a two-class recognition problem....

  10. L'Origine du Monde

    CERN Multimedia

    CNET & Ecole Polytechnique Paris; Vincent Ferreira

    1996-01-01

    Création, théologie, science, découverte, recherche, religion, condition humaine.Avec Maurice Jacob physicien, Hubert Curien Président du Conseil du CERN, Michael Doser physicien, Frère Emile Communauté de Taizé.

  11. discours du Directeur General

    CERN Document Server

    CERN. Geneva

    2007-01-01

    L'année 2007 est une année très spéciale pour le CERN. Je vous propose de nous retrouver pour faire le point sur les activités en cours. Rendez-vous le mercredi 27 juin à 15h00 dans l'amphithéâtre principal. La transmission simultanée sera assurée dans les amphithéâtres IT, AT, AB Prevessin et dans la Salle du Conseil. Robert Aymar

  12. MUON DETECTORS: ALIGNMENT

    CERN Multimedia

    G.Gomez

    Since September, the muon alignment system shifted from a mode of hardware installation and commissioning to operation and data taking. All three optical subsystems (Barrel, Endcap and Link alignment) have recorded data before, during and after CRAFT, at different magnetic fields and during ramps of the magnet. This first data taking experience has several interesting goals: •    study detector deformations and movements under the influence of the huge magnetic forces; •    study the stability of detector structures and of the alignment system over long periods, •    study geometry reproducibility at equal fields (specially at 0T and 3.8T); •    reconstruct B=0T geometry and compare to nominal/survey geometries; •    reconstruct B=3.8T geometry and provide DT and CSC alignment records for CMSSW. However, the main goal is to recons...

  13. MUON DETECTORS: ALIGNMENT

    CERN Multimedia

    S. Szillasi

    2013-01-01

    The CMS detector has been gradually opened and whenever a wheel became exposed the first operation was the removal of the MABs, the sensor structures of the Hardware Barrel Alignment System. By the last days of June all 36 MABs have arrived at the Alignment Lab at the ISR where, as part of the Alignment Upgrade Project, they are refurbished with new Survey target holders. Their electronic checkout is on the way and finally they will be recalibrated. During LS1 the alignment system will be upgraded in order to allow more precise reconstruction of the MB4 chambers in Sector 10 and Sector 4. This requires new sensor components, so called MiniMABs (pictured below), that have already been assembled and calibrated. Image 6: Calibrated MiniMABs are ready for installation For the track-based alignment, the systematic uncertainties of the algorithm are under scrutiny: this study will enable the production of an improved Monte Carlo misalignment scenario and to update alignment position errors eventually, crucial...

  14. MUON DETECTORS: ALIGNMENT

    CERN Multimedia

    G. Gomez

    2012-01-01

      A new muon alignment has been produced for 2012 A+B data reconstruction. It uses the latest Tracker alignment and single-muon data samples to align both DTs and CSCs. Physics validation has been performed and shows a modest improvement in stand-alone muon momentum resolution in the barrel, where the alignment is essentially unchanged from the previous version. The reference-target track-based algorithm using only collision muons is employed for the first time to align the CSCs, and a substantial improvement in resolution is observed in the endcap and overlap regions for stand-alone muons. This new alignment is undergoing the approval process and is expected to be deployed as part of a new global tag in the beginning of December. The pT dependence of the φ-bias in curvature observed in Monte Carlo was traced to a relative vertical misalignment between the Tracker and barrel muon systems. Moving the barrel as a whole to match the Tracker cures this pT dependence, leaving only the &phi...

  15. Incremental Alignment Manifold Learning

    Institute of Scientific and Technical Information of China (English)

    Zhi Han; De-Yu Meng; Zong-Sen Xu; Nan-Nan Gu

    2011-01-01

    A new manifold learning method, called incremental alignment method (IAM), is proposed for nonlinear dimensionality reduction of high dimensional data with intrinsic low dimensionality. The main idea is to incrementally align low-dimensional coordinates of input data patch-by-patch to iteratively generate the representation of the entire dataset. The method consists of two major steps, the incremental step and the alignment step. The incremental step incrementally searches neighborhood patch to be aligned in the next step, and the alignment step iteratively aligns the low-dimensional coordinates of the neighborhood patch searched to generate the embeddings of the entire dataset. Compared with the existing manifold learning methods, the proposed method dominates in several aspects: high efficiency, easy out-of-sample extension, well metric-preserving, and averting of the local minima issue. All these properties are supported by a series of experiments performed on the synthetic and real-life datasets. In addition, the computational complexity of the proposed method is analyzed, and its efficiency is theoretically argued and experimentally demonstrated.

  16. Design of a 1200-V Thin-Silicon-Layer p-Channel SOI LDMOS Device

    Institute of Scientific and Technical Information of China (English)

    胡盛东; 张玲; 罗小蓉; 张波; 李肇基; 吴丽娟

    2011-01-01

    A 1200-V thin-silicon-layer p-channel silicon-on-insulator(SOI)lateral double-diffused metal-oxide-semiconductor (LDMOS)transistor is designed.The device named INI SO1 p-LDMOS is characterized by a series of equidistant high concentration n+ islands inserted at the interface of a top silicon layer and a buried oxide layer.Accumulation-mode holes,caused by the electric potential dispersion between the device surface and the substrate,are located in the spacing between two neighboring n+ islands,and greatly enhance the electric field of the buried oxide layer and therefore,effectively increase the device breakdown voltage.Based on a 2-μm-thick buried oxide layer and a 1.5-μm-thick top silicon layer,a breakdown voltage of 1224 V is obtained,resulting in the high electric field(608 V/μm)of the buried oxide layer.%A 1200-V thin-silicon-layer p-channel silicon-on-insulator (SOI) lateral double-diffused metal-oxide-semiconductor (LDMOS) transistor is designed. The device named INI SOI p-LDMOS is characterized by a series of equidistant high concentration n+ islands inserted at the interface of a top silicon layer and a buried oxide layer. Accumulation-mode holes, caused by the electric potential dispersion between the device surface and the substrate, are located in the spacing between two neighboring n+ islands, and greatly enhance the electric field of the buried oxide layer and therefore, effectively increase the device breakdown voltage. Based on a 2-[im-thick buried oxide layer and a 1.5-um-thick top silicon layer, a breakdown voltage of 1224 V is obtained, resulting in the high electric field (608 V/\\im) of the buried oxide layer.

  17. A new analytical model of high voltage silicon on insulator (SOI) thin film devices

    Institute of Scientific and Technical Information of China (English)

    Hu Sheng-Dong; Zhang Bo; Li Zhao-Ji

    2009-01-01

    A new analytical model of high voltage silicon on insulator (SOI) thin film devices is proposed, and a formula of silicon critical electric field is derived as a function of silicon film thickness by solving a 2D Poisson equation from an effective ionization rate, with a threshold energy taken into account for electron multiplying. Unlike a conventional silicon critical electric field that is constant and independent of silicon film thickness, the proposed silicon critical electric field increases sharply with silicon film thickness decreasing especially in the case of thin films, and can come to 141 V/μm at a film thickness of 0.1 μm which is much larger than the normal value of about 30 V/μm. From the proposed formula of silicon critical electric field, the expressions of dielectric layer electric field and vertical breakdown voltage (VB,V) are obtained. Based on the model, an ultra thin film can be used to enhance dielectric layer electric field and so increase vertical breakdown voltage for SOI devices because of its high silicon critical electric field, and with a dielectric layer thickness of 2 μm the vertical breakdown voltages reach 852 and 300V for the silicon film thicknesses of 0.1 and 5μm, respectively. In addition, a relation between dielectric layer thickness and silicon film thickness is obtained, indicating a minimum vertical breakdown voltage that should be avoided when an SOI device is designed. 2D simulated results and some experimental results are in good agreement with analytical results.

  18. An SOI CMOS-Based Multi-Sensor MEMS Chip for Fluidic Applications.

    Science.gov (United States)

    Mansoor, Mohtashim; Haneef, Ibraheem; Akhtar, Suhail; Rafiq, Muhammad Aftab; De Luca, Andrea; Ali, Syed Zeeshan; Udrea, Florin

    2016-11-04

    An SOI CMOS multi-sensor MEMS chip, which can simultaneously measure temperature, pressure and flow rate, has been reported. The multi-sensor chip has been designed keeping in view the requirements of researchers interested in experimental fluid dynamics. The chip contains ten thermodiodes (temperature sensors), a piezoresistive-type pressure sensor and nine hot film-based flow rate sensors fabricated within the oxide layer of the SOI wafers. The silicon dioxide layers with embedded sensors are relieved from the substrate as membranes with the help of a single DRIE step after chip fabrication from a commercial CMOS foundry. Very dense sensor packing per unit area of the chip has been enabled by using technologies/processes like SOI, CMOS and DRIE. Independent apparatuses were used for the characterization of each sensor. With a drive current of 10 µA-0.1 µA, the thermodiodes exhibited sensitivities of 1.41 mV/°C-1.79 mV/°C in the range 20-300 °C. The sensitivity of the pressure sensor was 0.0686 mV/(Vexcit kPa) with a non-linearity of 0.25% between 0 and 69 kPa above ambient pressure. Packaged in a micro-channel, the flow rate sensor has a linearized sensitivity of 17.3 mV/(L/min)(-0.1) in the tested range of 0-4.7 L/min. The multi-sensor chip can be used for simultaneous measurement of fluid pressure, temperature and flow rate in fluidic experiments and aerospace/automotive/biomedical/process industries.

  19. An SOI CMOS-Based Multi-Sensor MEMS Chip for Fluidic Applications

    Directory of Open Access Journals (Sweden)

    Mohtashim Mansoor

    2016-11-01

    Full Text Available An SOI CMOS multi-sensor MEMS chip, which can simultaneously measure temperature, pressure and flow rate, has been reported. The multi-sensor chip has been designed keeping in view the requirements of researchers interested in experimental fluid dynamics. The chip contains ten thermodiodes (temperature sensors, a piezoresistive-type pressure sensor and nine hot film-based flow rate sensors fabricated within the oxide layer of the SOI wafers. The silicon dioxide layers with embedded sensors are relieved from the substrate as membranes with the help of a single DRIE step after chip fabrication from a commercial CMOS foundry. Very dense sensor packing per unit area of the chip has been enabled by using technologies/processes like SOI, CMOS and DRIE. Independent apparatuses were used for the characterization of each sensor. With a drive current of 10 µA–0.1 µA, the thermodiodes exhibited sensitivities of 1.41 mV/°C–1.79 mV/°C in the range 20–300 °C. The sensitivity of the pressure sensor was 0.0686 mV/(Vexcit kPa with a non-linearity of 0.25% between 0 and 69 kPa above ambient pressure. Packaged in a micro-channel, the flow rate sensor has a linearized sensitivity of 17.3 mV/(L/min−0.1 in the tested range of 0–4.7 L/min. The multi-sensor chip can be used for simultaneous measurement of fluid pressure, temperature and flow rate in fluidic experiments and aerospace/automotive/biomedical/process industries.

  20. MOVPE growth of GaN on 6-inch SOI-substrates: effect of substrate parameters on layer quality and strain

    Science.gov (United States)

    Lemettinen, J.; Kauppinen, C.; Rudzinski, M.; Haapalinna, A.; Tuomi, T. O.; Suihkonen, S.

    2017-04-01

    We demonstrate that higher crystalline quality, lower strain and improved electrical characteristics can be achieved in gallium nitride (GaN) epitaxy by using a silicon-on-insulator (SOI) substrate compared to a bulk silicon (Si) substrate. GaN layers were grown by metal–organic vapor phase epitaxy on 6-inch bulk Si and SOI wafers using the standard step graded AlGaN and AlN approach. The GaN layers grown on SOI exhibited lower strain according to x-ray diffraction analysis. Defect selective etching measurements suggested that the use of SOI substrate for GaN epitaxy reduces the dislocation density approximately by a factor of two. Furthermore, growth on SOI substrate allows one to use a significantly thinner AlGaN buffer compared to bulk Si. Synchrotron radiation x-ray topography analysis confirmed that the stress relief mechanism in GaN on SOI epitaxy is the formation of a dislocation network to the SOI device Si layer. In addition, the buried oxide layer significantly improves the vertical leakage characteristics as the onset of the breakdown is delayed by approximately 400 V. These results show that the GaN on the SOI platform is promising for power electronics applications.

  1. Les risques du travail

    CERN Document Server

    Thébaud-Mony, Annie

    2015-01-01

    Depuis les années 1990, les conditions de travail se sont peu à peu imposées dans le débat social. Néanmoins, la situation reste critique. Les risques traditionnels n'ont pas disparu : les manutentions lourdes, l'exposition professionnelle aux cancérogènes, au bruit ou aux vibrations demeurent répandues... De plus, certaines " améliorations " n'ont fait que déplacer et dissimuler les problèmes, telle l'externalisation des risques grâce à la sous-traitance. Dans le même temps, les transformations du travail et des modalités de gestion de la main-d'œuvre ont fragilisé les collectifs et accru l'isolement des salariés, conduisant à une montée visible de la souffrance psychique. Face à ces évolutions, il est plus que jamais nécessaire que tous les acteurs concernés, en particulier les salariés eux-mêmes et leurs représentants, s'approprient les connaissances indispensables pour améliorer la protection de la santé sur les lieux du travail. Tel est le but de ce livre, qui renouvelle int�...

  2. Les formes du fond

    Directory of Open Access Journals (Sweden)

    Michel Maffesoli

    2004-12-01

    Full Text Available Il n'est pas vrai que la nature a horreur du vide. Peut-être même s'y complait-elle. Le creux est aussi une modalité de l'être. Il est possible de s'y nicher, de s'y lover paresseusement et, ainsi, de se protéger contre l'angoisse du temps qui passe. Le creux des apparences est, à certains moments, une des formes d'expression de la vie sociale. Encore faut-il savoir le reconnaître. Certes, nous avons tous une existence personnelle, mais nous sommes, également, les représentants, parfois même les victimes, d'un "esprit commun", peut-être même d'un "inconscient collectif" qui s'est constitué de siècle en siècle. Et, très souvent, là où nous croyons exprimer nos propres idées, nous ne sommes que les porte-voix, les figurants d'un vaste "theatrum mundi" aux dimensions infinies.

  3. Choeur du CERN : Concert

    CERN Document Server

    CERN Choir

    2017-01-01

    Une œuvre à découvrir! La grande Missa pro defunctis de François-Joseph Gossec (1734-1829) est le chef-d’œuvre tôt venu (à vingt-cinq ans) d’un compositeur qui vivra encore 70 ans après sa création. Elle a connu la gloire, puis s’est fait un peu oublier. Pas du tout le monde cependant : des musicologues ont montré ce que le Requiem de Mozart lui devait ; et il suffit de l’avoir entendue pour comprendre pourquoi Berlioz (qui avait vingt-six ans à la mort de Gossec) en a été impressionné : les nombreux cuivres et bois répartis dans des endroits plus ou moins cachés de la salle de concert pour exprimer les frayeurs du Jugement dernier annoncent son Requiem – et celui de Verdi. Mais « plus encore que par...

  4. Development of a pixel sensor with fine space-time resolution based on SOI technology for the ILC vertex detector

    Science.gov (United States)

    Ono, Shun; Togawa, Manabu; Tsuji, Ryoji; Mori, Teppei; Yamada, Miho; Arai, Yasuo; Tsuboyama, Toru; Hanagaki, Kazunori

    2017-02-01

    We have been developing a new monolithic pixel sensor with silicon-on-insulator (SOI) technology for the International Linear Collider (ILC) vertex detector system. The SOI monolithic pixel detector is realized using standard CMOS circuits fabricated on a fully depleted sensor layer. The new SOI sensor SOFIST can store both the position and timing information of charged particles in each 20×20 μm2 pixel. The position resolution is further improved by the position weighted with the charges spread to multiple pixels. The pixel also records the hit timing with an embedded time-stamp circuit. The sensor chip has column-parallel analog-to-digital conversion (ADC) circuits and zero-suppression logic for high-speed data readout. We are designing and evaluating some prototype sensor chips for optimizing and minimizing the pixel circuit.

  5. Intrinsic Nonlinearities and Layout Impacts of 100 V Integrated Power MOSFETs in Partial SOI Process

    DEFF Research Database (Denmark)

    Fan, Lin; Knott, Arnold; Jørgensen, Ivan Harald Holger

    Parasitic capacitances of power semiconductors are a part of the key design parameters of state-of-the-art very high frequency (VHF) power supplies. In this poster, four 100 V integrated power MOSFETs with different layout structures are designed, implemented, and analyzed in a 0.18 ȝm partial...... Silicon-on-Insulator (SOI) process with a die area 2.31 mm2.  A small-signal model of power MOSFETs is proposed to systematically analyze the nonlinear parasitic capacitances in different transistor states: off-state, sub-threshold region, and on-state in the linear region. 3D plots are used to summarize...

  6. A New Nonlinear Model of Body Resistance in Nanometer PD SOI MOSFETs

    Directory of Open Access Journals (Sweden)

    Arash Daghighi

    2011-01-01

    Full Text Available In this paper, a nonlinear model for the body resistance of a 45nm PD SOI MOSFET is developed. This model verified on the base of the small signal three-dimensional simulation results. In this paper by using the three-dimensional simulation of ISE-TCAD software, the indicating factors of body resistance in nanometer transistors and then are shown, using the surface potential model. A mathematical relation to calculat the body resistance incorporating device width and body potential was derived. Excellent agreement was obtained by comparing the model outputs and three-dimensional simulation results.

  7. SOI pixel circuits with synchronized TMC for time-of-flight stigmatic imaging mass spectrometry

    CERN Document Server

    Watanabe, Kaori; Fujita, Youichi; Arai, Yasuo; Hazama, Hisanao

    2015-01-01

    We propose SOI pixel circuits with a synchronized time memory cell (TMC) for time-of-flight stigmatic imaging mass spectrometry. The circuits simultaneously detect the position and the fine/coarse flight time of an ion for the MALDI-ToF mass spectrometer. We discuss the circuit design and present the simulation results of a prototype detector comprised of a 32 x 32 pixel array in which each pixel pitch is 40 um and the time resolution is a minimum of 1 ns. The results of transient analysis demonstrate the fully correct synchronous operation at a 100-MHz clock frequency and simultaneous 32-word SRAM writing.

  8. Optimal design of a multi-mode interference splitter based on SOI

    Institute of Scientific and Technical Information of China (English)

    SONG Wei; XIE Kang

    2008-01-01

    In this paper,the multimode waveguide lengths and the output port locations of a SOI(silicon on insulator)material-based 1x4 MMI(multimode interference)optical splitter are optimized by means of FD-BPM (finite difference-beam propaga-tion method).An improved 1x4 MMI optical splitter is designed.Compared with an usual optical splitter,a smaller loss O.12dB and a better output port power uniforrnity 0.11dB are achieved for the optical signal transmission.

  9. A preliminary study of bryophytes in the Khao Soi Dao wildlife sanctuary, Chanthaburi Province, Thailand

    Directory of Open Access Journals (Sweden)

    Phiangphak Sukkharak

    2014-10-01

    Full Text Available An investigation of bryophyte diversity of Khao Soi Dao wildlife sanctuary, Chanthaburi Province, Thailand was carried out in April 2013. In total, 387 specimens were enumerated, consisting of 103 species (45 liverworts, 1 hornwort, 57 mosses, 67 genera (25 liverworts, 1 hornwort, 41 mosses, and 38 families (14 liverworts, 1 hornwort, 23 mosses, excluding those as yet unidentified to species. Among these, four species of mosses, including Clastobryum glabrescens (Z.Iwats. B.C.Tan, Z.Iwats. & D.H.Norris, Macromitrium lorifolium Paris & Broth., Pterobryopsis gedehensis M.Fleisch., and Radulina borbonica (Bél. W.R.Buck, are newly reported to Thailand in this paper.

  10. Low-frequency noise in bare SOI wafers: Experiments and model

    Science.gov (United States)

    Pirro, L.; Ionica, I.; Cristoloveanu, S.; Ghibaudo, G.

    2016-11-01

    Low-frequency noise (LFN) measurements are largely used for interface quality characterization in MOSFETs. In this work, a detailed investigation of LFN technique applied to pseudo-MOSFETs in bare silicon-on-insulator (SOI) substrates is provided. A physical model capable to describe the experimental results is proposed and validated using different die areas and inter-probe distances. The effective silicon area contributing to the noise signal, the impact of defects induced by probes and the possibility to extract interface trap density are addressed.

  11. Novel lateral IGBT with n-region controlled anode on SOI substrate

    Institute of Scientific and Technical Information of China (English)

    Chen Wensuo; Xie Gang; Zhang Bo; Li Zehong; Li Zhaoji

    2009-01-01

    A new lateral insulated-gate bipolar transistor (LIGBT) structure on SOI substrate, called an n-region controlled anode LIGBT (NCA-LIGBT), is proposed and discussed. The n-region controlled anode concept results in fast switch speeds, efficient area usage and effective suppression NDR in forward I-V characteristics. Simulation results of the key parameters (n-region doping concentration, length, thickness and p-base doping concentration) show that the NCA-LIGBT has a good tradeoff between turn-off time and on-state voltage drop. The proposed LIGBT is a novel device for power ICs such as PDP scan driver ICs.

  12. Total dose radiation effects on SOI NMOS transistors with different layouts

    Institute of Scientific and Technical Information of China (English)

    TIAN Hao; ZHANG Zheng-Xuan; HE Wei; YU Wen-Jie; WANG Ru; CHEN Ming

    2008-01-01

    Partially-depleted Silicon-On-Insulator Negative Channel Metal Oxide Semiconductor (SOI NMOS)transistors with different layouts are fabricated on radiation hard Separation by IMplanted OXygen (SIMOX)substrate and tested using 10 keV X-ray radiation sources.The radiation performance is characterized by transistor threshold voltage shift and transistor leakage currents as a function of the total dose up to 2.0×106 rad(Si).The results show that the total dose radiation effects on NMOS devices are very sensitive to their layout structures.

  13. Results and limits in the 1-D analytical modeling for the asymmetric DG SOI MOSFET

    OpenAIRE

    O. Cobianu; M. Glesner

    2008-01-01

    This paper presents the results and the limits of 1-D analytical modeling of electrostatic potential in the low-doped p type silicon body of the asymmetric n-channel DG SOI MOSFET, where the contribution to the asymmetry comes only from p- and n-type doping of polysilicon used as the gate electrodes. Solving Poisson's equation with boundary conditions based on the continuity of normal electrical displacement at interfaces and the presence of a minimum electrostatic potential by using the...

  14. 3D Alignment of nanowriters using fringe capacitance

    Science.gov (United States)

    Lally, Richard; Stark, Thomas; Reeves, Jeremy; Barrett, Lawrence; Bishop, David

    With the introduction of atomic calligraphy, high resolution nanoscale structures can be fabricated rapidly over a large surface area. This reliable, chemically stable and cost effective nanoscale writing method can be applied to a number of interesting applications. One specific application of this writing approach is to fabricate metamaterials, a process that requires precise alignment of the MEMS and substrate. Here we present a MEMS based solution coupling the well-studied comb drive capacitance effects with the less predictable close order fringe effects. The combined capacitance allows for precise measurements in the nanometer range. Using two sets of orthogonal static MEMS comb drives, the capacitance is used to discern the x, y, and z spatial displacement from the substrate. The unique SOI wafer is prepared creating a periodic array of silicon pillars. Placement of additional MEMS comb drives at the MEMS device edges will allow stage corrections for tip, tilt and rotational alignment thereby reducing the effects generated by variations in wafer thickness and surface smoothness. This work is funded by the DARPA A2P Program.

  15. L’image de soi dans les « autographies » de Rousseau Rousseau’s image of self in his “Autographies”

    Directory of Open Access Journals (Sweden)

    Pascale Delormas

    2008-09-01

    Full Text Available Dans ses autographies, Rousseau réitère sa plainte en vue de défendre son image : il met en œuvre les différentes catégories aristotéliciennes de l’éloquence – épidictique, judiciaire et délibératif. Le mode d’adresse au lecteur et les modèles textuels qu’il emprunte à la tradition donnent lieu à un ethos montré de rhéteur : l’exemplum dans les Confessions, l’elenchos dans les Dialogues et la disputatio dans les Rêveries sont au service d’une figure de philosophe conforme aux attentes du public. Cet ethos montré se superpose à l’ethos représenté. L’analogie entre types oratoires and littéraires est fondamentale à l’âge classique; ainsi, à côté de la Rhétorique, Rousseau puise dans la Poétique d’Aristote et dans les Principes de Littérature de Batteux pour façonner un ethos favorable sous une forme épique, dramatique et lyrique. Les autographies de Rousseau peuvent être envisagées selon une approche dialogique comme autant de réponses à des jugements contemporains. Ainsi, l’auteur est-il confronté à la nécessité de prendre en considération l’ethos préalable pour éviter tout discrédit : l’image de soi qu’il donne dans ses autographies s’oppose à la réalité d’un homme que la culture et les fréquentations mondaines désignent comme un membre parfaitement intégré socialement. En effet, dans une perspective éditoriale, il doit apparaître comme un philosophe détaché de toute contingence. Pour montrer comment la force persuasive de l’ethos discursif s’exerce sur le lecteur des autographies de Rousseau, nous montrons que l’ethos effectif naît d’ethè variés qui s’articulent : l’ethos du rhéteur, l’ethos du philosophe tel que le rhéteur le met en scène, l’ethos de l’auteur issu de ces ethè contradictoires (que les Dialogues explicitent, l’ethos du philosophe tel qu’il est perçu dans la manière même de l’écriture du texte (dont

  16. Curriculum Alignment Research Suggests that Alignment Can Improve Student Achievement

    Science.gov (United States)

    Squires, David

    2012-01-01

    Curriculum alignment research has developed showing the relationship among three alignment categories: the taught curriculum, the tested curriculum and the written curriculum. Each pair (for example, the taught and the written curriculum) shows a positive impact for aligning those results. Following this, alignment results from the Third…

  17. Curriculum Alignment Research Suggests that Alignment Can Improve Student Achievement

    Science.gov (United States)

    Squires, David

    2012-01-01

    Curriculum alignment research has developed showing the relationship among three alignment categories: the taught curriculum, the tested curriculum and the written curriculum. Each pair (for example, the taught and the written curriculum) shows a positive impact for aligning those results. Following this, alignment results from the Third…

  18. L'auto-handicap chez les adolescents: Analyse d’une stratégie de protection de Soi à l'école

    OpenAIRE

    Leyrit, Alexandra; Oubrayrie-Roussel, Nathalie; Prêteur, Yves

    2011-01-01

    Cette recherche se centre sur les stratégies utilisées par les adolescents afin de protéger leur estime de soi mise en jeu à l'école. Considérant la multidimensionnalité de l'estime de soi, nous supposons que les facteurs scolaires opérationnalisés dans notre étude par le redoublement et la moyenne scolaire déclarée par le jeune vont influencer l'estime de soi scolaire de ce dernier. Afin de protéger son estime de soi globale d'une possible influence néfaste de l'estime de soi scolaire faible...

  19. MaxAlign: maximizing usable data in an alignment

    DEFF Research Database (Denmark)

    Oliveira, Rodrigo Gouveia; Sackett, Peter Wad; Pedersen, Anders Gorm

    2007-01-01

    BACKGROUND: The presence of gaps in an alignment of nucleotide or protein sequences is often an inconvenience for bioinformatical studies. In phylogenetic and other analyses, for instance, gapped columns are often discarded entirely from the alignment. RESULTS: MaxAlign is a program that optimizes...... the alignment prior to such analyses. Specifically, it maximizes the number of nucleotide (or amino acid) symbols that are present in gap-free columns - the alignment area - by selecting the optimal subset of sequences to exclude from the alignment. MaxAlign can be used prior to phylogenetic and bioinformatical...... analyses as well as in other situations where this form of alignment improvement is useful. In this work we test MaxAlign's performance in these tasks and compare the accuracy of phylogenetic estimates including and excluding gapped columns from the analysis, with and without processing with MaxAlign...

  20. The Experimental Analysis of Cross-talk Effect for Mixed-mode IC's Based on SOI Structure

    Institute of Scientific and Technical Information of China (English)

    ZHANGGuoyan; HUANGRu; ZHANGXing; WANGYangyuan

    2004-01-01

    The experimental study of cross-talk behavior is presented for mixed-mode integrated circuits based on SOI (Silicon-on-insulator) structure. Different strategies to reduce cross-talk are investigated. The influence of bulk contact, separation distance, the guard ring isolation and mesa isolation on the cross-talk has been compared. At the same time, the effect of load impedance on the cross-talk is also included. The results can serve as a guideline for designing low-noise coupling SOI mixed-mode IC's.

  1. Effect of phosphorus ion implantation on back gate effect of partially depleted SOI NMOS under total dose radiation

    Science.gov (United States)

    Leilei, Li; Xinjie, Zhou; Zongguang, Yu; Qing, Feng

    2015-01-01

    The mechanism of improving the TID radiation hardened ability of partially depleted silicon-on-insulator (SOI) devices by using the back-gate phosphorus ion implantation technology is studied. The electron traps introduced in SiO2 near back SiO2/Si interface by phosphorus ions implantation can offset positive trapped charges near the back-gate interface. The implanted high concentration phosphorus ions can greatly reduce the back-gate effect of a partially depleted SOI NMOS device, and anti-total-dose radiation ability can reach the level of 1 Mrad(Si) for experimental devices.

  2. MUON DETECTORS: ALIGNMENT

    CERN Multimedia

    Gervasio Gomez

    2012-01-01

      The new alignment for the DT chambers has been successfully used in physics analysis starting with the 52X Global Tag. The remaining main areas of development over the next few months will be preparing a new track-based CSC alignment and producing realistic APEs (alignment position errors) and MC misalignment scenarios to match the latest muon alignment constants. Work on these items has been delayed from the intended timeline, mostly due to a large involvement of the muon alignment man-power in physics analyses over the first half of this year. As CMS keeps probing higher and higher energies, special attention must be paid to the reconstruction of very-high-energy muons. Recent muon POG reports from mid-June show a φ-dependence in curvature bias in Monte Carlo samples. This bias is observed already at the tracker level, where it is constant with muon pT, while it grows with pT as muon chamber information is added to the tracks. Similar studies show a much smaller effect in data, at le...

  3. MUON DETECTORS: ALIGNMENT

    CERN Multimedia

    G. Gomez

    2010-01-01

    For the last three months, the Muon Alignment group has focussed on providing a new, improved set of alignment constants for the end-of-year data reprocessing. These constants were delivered on time and approved by the CMS physics validation team on November 17. The new alignment incorporates several improvements over the previous one from March for nearly all sub-systems. Motivated by the loss of information from a hardware failure in May (an entire MAB was lost), the optical barrel alignment has moved from a modular, super-plane reconstruction, to a full, single loop calculation of the entire geometry for all DTs in stations 1, 2 and 3. This makes better use of the system redundancy, mitigating the effect of the information loss. Station 4 is factorised and added afterwards to make the system smaller (and therefore faster to run), and also because the MAB calibration at the MB4 zone is less precise. This new alignment procedure was tested at 0 T against photogrammetry resulting in precisions of the order...

  4. MUON DETECTORS: ALIGNMENT

    CERN Document Server

    M. Dallavalle

    2013-01-01

    A new Muon misalignment scenario for 2011 (7 TeV) Monte Carlo re-processing was re-leased. The scenario is based on running of standard track-based reference-target algorithm (exactly as in data) using single-muon simulated sample (with the transverse-momentum spectrum matching data). It used statistics similar to what was used for alignment with 2011 data, starting from an initially misaligned Muon geometry from uncertainties of hardware measurements and using the latest Tracker misalignment geometry. Validation of the scenario (with muons from Z decay and high-pT simulated muons) shows that it describes data well. The study of systematic uncertainties (dominant by now due to huge amount of data collected by CMS and used for muon alignment) is finalised. Realistic alignment position errors are being obtained from the estimated uncertainties and are expected to improve the muon reconstruction performance. Concerning the Hardware Alignment System, the upgrade of the Barrel Alignment is in progress. By now, d...

  5. Ergodic Secret Alignment

    CERN Document Server

    Bassily, Raef

    2010-01-01

    In this paper, we introduce two new achievable schemes for the fading multiple access wiretap channel (MAC-WT). In the model that we consider, we assume that perfect knowledge of the state of all channels is available at all the nodes in a causal fashion. Our schemes use this knowledge together with the time varying nature of the channel model to align the interference from different users at the eavesdropper perfectly in a one-dimensional space while creating a higher dimensionality space for the interfering signals at the legitimate receiver hence allowing for better chance of recovery. While we achieve this alignment through signal scaling at the transmitters in our first scheme (scaling based alignment (SBA)), we let nature provide this alignment through the ergodicity of the channel coefficients in the second scheme (ergodic secret alignment (ESA)). For each scheme, we obtain the resulting achievable secrecy rate region. We show that the secrecy rates achieved by both schemes scale with SNR as 1/2log(SNR...

  6. Jouer du piano

    Directory of Open Access Journals (Sweden)

    Fériel Kaddour

    2011-04-01

    Full Text Available La réflexion s’appuie dans un premier temps sur une opposition entre deux attitudes de pianistes  à l’égard du travail à l’instrument : Gould, qui revendique une séparation d’avec le clavier pour ne privilégier que la lecture; Arrau, dont la technique au contraire vise à « faire corps » avec son piano. L’étude de ces deux démarches d’interprètes conduit à une conclusion croisée : l’abstraction gouldienne n’est rien d’autre qu’un déplacement du jeu vers d’autres instruments (ceux qui servent à la prise de son et au montage de ses enregistrements ; le « faire-corps » hérité de la culture pianistique romantique est plus dialectique que fusionnel, et en cela implique une capacité de mise à distance. A partir de cette double conclusion, on tâche enfin de repenser la place du jeu à l’instrument dans la mise en œuvre d’une interprétation, en interrogeant le dialogue qui s’instaure entre la partition telle qu’elle s’écrit et le geste tel qu’il se joue.Our study leans on an opposition between two pianists' attitudes about their work with the instrument. Gould claims a necessary separation from the keyboard in order to prioritize reading. Arrau, on the contrary, relies on a technique which consists in “being one” with his piano. The analysis of these two interprets’ behaviours leads to a crossed conclusion: the gouldian abstraction is nothing else than a displacement of the playing towards another kind of instruments, the ones he uses in sound recording and cut up; Arrau’s “being one” is more dialectic than at first sight, and it therefore implies a real distancing from the piano. This constatation leads to rethink the place of the piano playing in the setting of an interpretation, and to highlight the real dialogue which develops itself between the score as it has been written and the gesture as it is played.

  7. A Lateral Differential Resonant Pressure Microsensor Based on SOI-Glass Wafer-Level Vacuum Packaging

    Directory of Open Access Journals (Sweden)

    Bo Xie

    2015-09-01

    Full Text Available This paper presents the fabrication and characterization of a resonant pressure microsensor based on SOI-glass wafer-level vacuum packaging. The SOI-based pressure microsensor consists of a pressure-sensitive diaphragm at the handle layer and two lateral resonators (electrostatic excitation and capacitive detection on the device layer as a differential setup. The resonators were vacuum packaged with a glass cap using anodic bonding and the wire interconnection was realized using a mask-free electrochemical etching approach by selectively patterning an Au film on highly topographic surfaces. The fabricated resonant pressure microsensor with dual resonators was characterized in a systematic manner, producing a quality factor higher than 10,000 (~6 months, a sensitivity of about 166 Hz/kPa and a reduced nonlinear error of 0.033% F.S. Based on the differential output, the sensitivity was increased to two times and the temperature-caused frequency drift was decreased to 25%.

  8. Development of an X-ray imaging system with SOI pixel detectors

    Energy Technology Data Exchange (ETDEWEB)

    Nishimura, Ryutaro, E-mail: ryunishi@post.kek.jp [School of High Energy Accelerator Science, SOKENDAI (The Graduate University for Advanced Studies), Oho 1-1, Tsukuba, Ibaraki 305-0801 (Japan); Arai, Yasuo; Miyoshi, Toshinobu [Institute of Particle and Nuclear Studies, High Energy Accelerator Research Organization (KEK-IPNS), Oho 1-1, Tsukuba, Ibaraki 305-0801 (Japan); Hirano, Keiichi; Kishimoto, Shunji; Hashimoto, Ryo [Institute of Materials Structure Science, High Energy Accelerator Research Organization (KEK-IMSS), Oho 1-1, Tsukuba, Ibaraki 305-0801 (Japan)

    2016-09-21

    An X-ray imaging system employing pixel sensors in silicon-on-insulator technology is currently under development. The system consists of an SOI pixel detector (INTPIX4) and a DAQ system based on a multi-purpose readout board (SEABAS2). To correct a bottleneck in the total throughput of the DAQ of the first prototype, parallel processing of the data taking and storing processes and a FIFO buffer were implemented for the new DAQ release. Due to these upgrades, the DAQ throughput was improved from 6 Hz (41 Mbps) to 90 Hz (613 Mbps). The first X-ray imaging system with the new DAQ software release was tested using 33.3 keV and 9.5 keV mono X-rays for three-dimensional computerized tomography. The results of these tests are presented. - Highlights: • The X-ray imaging system employing the SOI pixel sensor is currently under development. • The DAQ of the first prototype has the bottleneck in the total throughput. • The new DAQ release solve the bottleneck by parallel processing and FIFO buffer. • The new DAQ release was tested using 33.3 keV and 9.5 keV mono X-rays.

  9. The Hungarian Version of Sociosexual Orientation Inventory Revised (SOI-R: Sex and Age Differences

    Directory of Open Access Journals (Sweden)

    Norbert Meskó

    2014-06-01

    Full Text Available Affectionless, uncommitted sexual behavior was formerly interpreted in psychology as a function of individual decisions, a kind of intrapsychic variable. Sociosexual orientation is directly linked to reproductive success, so among other issues, measuring sociosexual orientation has been of great interest for evolutionary scientists. Most recently Penke and Asendorpf (2008 prepared the revised version of Sociosexual Orientation Inventory (SOI-R, which has been used in dozens of studies since its publication. The aim of the current study was to test the usability of the Hungarian version and to analyze the factor structure and internal reliability of the inventory. It was translated and the structure was analyzed on a Hungarian sample (n = 1345, females = 832, males = 513; age: M = 26.37 years, SD = 8.75, range: 16-74. Our results show that the Hungarian version has the same three-factor structure as proposed by Penke and Asendorpf (2008 and is a reliable inventory for further studies of sociosexuality. The sociosexual scores of the two sexes statistically differ in the expected direction: women show lower SOI scores than men. Sociosexual desire decreases with age, whereas older participants report less restricted sociosexual behavior. Sociosexual attitude is uneffected by age. Results are discussed from both evolutionary and life-span developmental points of view.

  10. Mixed logic style adder circuit designed and fabricated using SOI substrate for irradiation-hardened experiment

    Science.gov (United States)

    Yuan, Shoucai; Liu, Yamei

    2016-08-01

    This paper proposed a rail to rail swing, mixed logic style 28-transistor 1-bit full adder circuit which is designed and fabricated using silicon-on-insulator (SOI) substrate with 90 nm gate length technology. The main goal of our design is space application where circuits may be damaged by outer space radiation; so the irradiation-hardened technique such as SOI structure should be used. The circuit's delay, power and power-delay product (PDP) of our proposed gate diffusion input (GDI)-based adder are HSPICE simulated and compared with other reported high-performance 1-bit adder. The GDI-based 1-bit adder has 21.61% improvement in delay and 18.85% improvement in PDP, over the reported 1-bit adder. However, its power dissipation is larger than that reported with 3.56% increased but is still comparable. The worst case performance of proposed 1-bit adder circuit is also seen to be less sensitive to variations in power supply voltage (VDD) and capacitance load (CL), over a wide range from 0.6 to 1.8 V and 0 to 200 fF, respectively. The proposed and reported 1-bit full adders are all layout designed and wafer fabricated with other circuits/systems together on one chip. The chip measurement and analysis has been done at VDD = 1.2 V, CL = 20 fF, and 200 MHz maximum input signal frequency with temperature of 300 K.

  11. Growth and electrical characterization of high K oxide films on SOI wafers.

    Science.gov (United States)

    Locquet, J.-P.; Halley, D.; Norga, G.; Fompeyrine, J.; Seo, J. W.; Guiller, A.; Marchiori, C.; Siegwart, H.; Rossel, C.

    2003-03-01

    High-K oxides for the gate stack present two major challenges : i) the existence of charge in the high-K layer / Si interface and ii) a significant carrier mobility reduction. Since a mobility estimate usually requires the building of a transistor, other simpler methods involving SOI wafers are used here. We report for the first time the growth of epitaxial (LaZrO_3.5 & SrO buffered SrTiO_3) and polycrystalline ZrO2 on SOI (100) & (111) wafers. RHEED and XRD confirm the high structural quality of these films. The transport properties (IV, CV, Hall mobility, Pseudo-MOSFET) are measured using a UHV high temperature (30-800 K) & high magnetic field (1.5 T) setup. Initial results indicate that these transport properties can all be measured at high temperature during and after a process gas (H_2, O_2, N_2) anneal treatment. Hence the amount of charge in the oxide layers or at the interfaces can be varied systematically, and a correlation with the mobility can be established.

  12. 薄膜全耗尽SOI CMOS工艺技术研究

    Institute of Scientific and Technical Information of China (English)

    徐春叶; 刘善喜

    2004-01-01

    对1.2μ薄膜全耗尽SOI CMOS(TFD SOI CMOS)器件和电路进行了研究,硅膜厚度为80nm。器件采用LDD结构,以提高击穿电压、抑制断沟道效应和热载流子效应;对沟道掺杂能量和剂量进行了摸索,确保一定的开启电压和器件的全耗尽;为了减小“鸟嘴”,进行了PBL(Poly-Buffered LOCOS)隔离技术研究;溅Ti硅化物技术,使方阻过大问题得以解决。经过工艺流片,获得了性能良好的器件和电路。

  13. Defect Characterization in SiGe/SOI Epitaxial Semiconductors by Positron Annihilation

    Directory of Open Access Journals (Sweden)

    Ferragut R

    2010-01-01

    Full Text Available Abstract The potential of positron annihilation spectroscopy (PAS for defect characterization at the atomic scale in semiconductors has been demonstrated in thin multilayer structures of SiGe (50 nm grown on UTB (ultra-thin body SOI (silicon-on-insulator. A slow positron beam was used to probe the defect profile. The SiO2/Si interface in the UTB-SOI was well characterized, and a good estimation of its depth has been obtained. The chemical analysis indicates that the interface does not contain defects, but only strongly localized charged centers. In order to promote the relaxation, the samples have been submitted to a post-growth annealing treatment in vacuum. After this treatment, it was possible to observe the modifications of the defect structure of the relaxed film. Chemical analysis of the SiGe layers suggests a prevalent trapping site surrounded by germanium atoms, presumably Si vacancies associated with misfit dislocations and threading dislocations in the SiGe films.

  14. Development and Performance of Kyoto's X-ray Astronomical SOI pixel (SOIPIX) sensor

    CERN Document Server

    Tsuru, Takeshi G; Takeda, Ayaki; Tanaka, Takaaki; Nakashima, Shinya; Arai, Yasuo; Mori, Koji; Takenaka, Ryota; Nishioka, Yusuke; Kohmura, Takayoshi; Hatsui, Takaki; Kameshima, Takashi; Ozaki, Kyosuke; Kohmura, Yoshiki; Wagai, Tatsuya; Takei, Dai; Kawahito, Shoji; Kagawa, Keiichiro; Yasutomi, Keita; Kamehama, Hiroki; Shrestha, Sumeet

    2014-01-01

    We have been developing monolithic active pixel sensors, known as Kyoto's X-ray SOIPIXs, based on the CMOS SOI (silicon-on-insulator) technology for next-generation X-ray astronomy satellites. The event trigger output function implemented in each pixel offers microsecond time resolution and enables reduction of the non-X-ray background that dominates the high X-ray energy band above 5--10 keV. A fully depleted SOI with a thick depletion layer and back illumination offers wide band coverage of 0.3--40 keV. Here, we report recent progress in the X-ray SOIPIX development. In this study, we achieved an energy resolution of 300~eV (FWHM) at 6~keV and a read-out noise of 33~e- (rms) in the frame readout mode, which allows us to clearly resolve Mn-K$\\alpha$ and K$\\beta$. Moreover, we produced a fully depleted layer with a thickness of $500~{\\rm \\mu m}$. The event-driven readout mode has already been successfully demonstrated.

  15. Simulation study of a novel 3D SPAD pixel in an advanced FD-SOI technology

    Science.gov (United States)

    Vignetti, M. M.; Calmon, F.; Lesieur, P.; Savoy-Navarro, A.

    2017-02-01

    In this paper, a novel SPAD architecture implemented in a Fully-Depleted Silicon-On-Insulator (SOI) CMOS technology is presented. Thanks to its intrinsic vertical 3D structure, the proposed solution is expected to allow further scaling of the pixel size while ensuring high fill factors. Moreover the pixel and the detector electronics can benefit of the well-known advantages brought by SOI technology with respect to bulk CMOS, such as higher speed and lower power consumption. TCAD simulations based on realistic process parameters and dedicated post-processing analysis are carried out in order to optimize and validate the avalanche diode architecture for an optimal electric field distribution in the device but also to extract the main parameters of the SPAD, such as the breakdown voltage, the avalanche triggering probability, the dark count rate and the photon detection probability. A comparison between the efficiency in back-side and front-side approaches is carried out with a particular focus on time-of-flight applications.

  16. Improving breakdown voltage performance of SOI power device with folded drift region

    Institute of Scientific and Technical Information of China (English)

    李琦; 李海鸥; 黄平奖; 肖功利; 杨年炯

    2016-01-01

    A novel silicon-on-insulator (SOI) high breakdown voltage (BV) power device with interlaced dielectric trenches (IDT) and N/P pillars is proposed. In the studied structure, the drift region is folded by IDT embedded in the active layer, which results in an increase of length of ionization integral remarkably. The crowding phenomenon of electric field in the corner of IDT is relieved by the N/P pillars. Both traits improve two key factors of BV, the ionization integral length and electric field magnitude, and thus BV is significantly enhanced. The electric field in the dielectric layer is enhanced and a major portion of bias is borne by the oxide layer due to the accumulation of inverse charges (holes) at the corner of IDT. The average value of the lateral electric field of the proposed device reaches 60 V/µm with a 10 µm drift length, which increases by 200%in comparison to the conventional SOI LDMOS, resulting in a breakdown voltage of 607 V.

  17. Development and performance of Kyoto's x-ray astronomical SOI pixel (SOIPIX) sensor

    Science.gov (United States)

    Tsuru, Takeshi G.; Matsumura, Hideaki; Takeda, Ayaki; Tanaka, Takaaki; Nakashima, Shinya; Arai, Yasuo; Mori, Koji; Takenaka, Ryota; Nishioka, Yusuke; Kohmura, Takayoshi; Hatsui, Takaki; Kameshima, Takashi; Ozaki, Kyosuke; Kohmura, Yoshiki; Wagai, Tatsuya; Takei, Dai; Kawahito, Shoji; Kagawa, Keiichiro; Yasutomi, Keita; Kamehama, Hiroki

    2014-08-01

    We have been developing monolithic active pixel sensors, known as Kyoto's X-ray SOIPIXs, based on the CMOS SOI (silicon-on-insulator) technology for next-generation X-ray astronomy satellites. The event trigger output function implemented in each pixel offers microsecond time resolution and enables reduction of the non-X-ray background that dominates the high X-ray energy band above 5-10 keV. A fully depleted SOI with a thick depletion layer and back illumination offers wide band coverage of 0.3-40 keV. Here, we report recent progress in the X-ray SOIPIX development. In this study, we achieved an energy resolution of 300 eV (FWHM) at 6 keV and a read-out noise of 33 e- (rms) in the frame readout mode, which allows us to clearly resolve Mn-Kα and Kβ. Moreover, we produced a fully depleted layer with a thickness of 500 μm. The event-driven readout mode has already been successfully demonstrated.

  18. A demonstrator analog signal processing circuit in a radiation hard SOI-CMOS technology

    CERN Document Server

    Anghinolfi, Francis; Campbell, M; Heijne, Erik H M; Jarron, Pierre; Meddeler, G; CERN. Geneva. Detector Research and Development Committee

    1990-01-01

    It is proposed to develop a demonstrator integrated circuit for particle detector analog signal processing using the advanced 1.2 micron HSOI3-HD Silicon-on-Insulator (SOI) CMOS radiation hard technology of Thomson-TMS, which has recently become accessible for selected civilian applications. The characteristics announced for this process promise survivability after a total dose in excess of 10 Mrad (SiO2) and 10**14 to 10**15 n/cm2, which is probably satisfactory for applications in LHC detector systems. The properties of such a SOI process look promising, in particular regarding speed. In view of the special analog requirements in the particle physics environment,one should verify the analog characteristics before and after irradiation by producing a demonstrator signal processing circuit which incorporates the most vital functional blocks. This demonstrator would consist of a low noise front-end amplifier, a comparator and an analog pipeline element with associated logic, following the scheme of the Hierarc...

  19. FMIT alignment cart

    Energy Technology Data Exchange (ETDEWEB)

    Potter, R.C.; Dauelsberg, L.B.; Clark, D.C.; Grieggs, R.J.

    1981-01-01

    The Fusion Materials Irradiation Test (FMIT) Facility alignment cart must perform several functions. It must serve as a fixture to receive the drift-tube girder assembly when it is removed from the linac tank. It must transport the girder assembly from the linac vault to the area where alignment or disassembly is to take place. It must serve as a disassembly fixture to hold the girder while individual drift tubes are removed for repair. It must align the drift tube bores in a straight line parallel to the girder, using an optical system. These functions must be performed without violating any clearances found within the building. The bore tubes of the drift tubes will be irradiated, and shielding will be included in the system for easier maintenance.

  20. Le sacre du printemps

    Directory of Open Access Journals (Sweden)

    Denise Pumain

    2002-03-01

    Full Text Available Cybergeo aura six ans en avril : dans la réalité du virtuel, dans l'univers récent et fluctuant de la publication en ligne, cela fait de nous, tout à la fois, des pionniers et des vétérans. De façon plus surprenante, il se trouve que nous sommes aussi uniques : parmi toutes les revues électroniques de sciences sociales, aucune ne combine comme Cybergeo ancienneté, publication exclusivement électronique, liberté d'accès au texte intégral, édition et gestion par des chercheurs, et comité de lec...

  1. Le Brahmane du Komintern

    Directory of Open Access Journals (Sweden)

    Elizabeth Burgos

    2008-01-01

    Full Text Available Le Brahmane du Komintern, largometraje documental del realizador francés Vladimir León, constituye un ejercicio ejemplar de investigación histórica y  de lograda factura de realización. Y, pese a no haber contado con la ayuda de ninguno organismo público, se trata de un ambicioso proyecto que cubre una amplia extensión geográfica que abarca: Estados Unidos, México, Moscú, Berlín, y la India. Gira en torno a una figura que tuvo en su tiempo su hora de gloria. Un bengalí, hijo de braman, la c...

  2. Cultures du travail

    OpenAIRE

    de Bonnault-Cornu, Phanette; Charrasse, David; Herberich-Marx, Geneviève; Lamy, Yvon; Lazier, Isabelle; Mairot, Philippe; Morel, Alain; Périssère, Michèle; Raphaël, Freddy; Ribeill, Georges; Salmeron, Pierre; Vant, André

    2015-01-01

    Qu’est-ce qu’une culture du travail ? Comment la définir autrement qu’en opposition à la culture savante ? Quelles relations une société entretient-elle avec son ou ses industries ? Comment définir et appréhender ce qu’on appelle la culture d’entreprise ? A ces questions ethnologues, sociologues, géographes et historiens apportent ici des réponses.Ce livre est aussi consacré à l’intérêt que ces sociétés, villes, petites régions, entreprises, portent à ce qui constitue leur patrimoine industri...

  3. OPERATION DU FOISONNEMENT

    Directory of Open Access Journals (Sweden)

    Gholamreza Djelveh

    2010-04-01

    Full Text Available Mousses alimentaires sont un sous-ensemble des aliments connus sous le nom de produits fouettés ou des produits aérés. Ils sont des produits formulés avec des qualités telles que la légèreté et la souplesse et sont principalement consommés à l'apéritif ou au dessert. Les produits en mousse obtenue par dispersion d'un gaz dans une matrice alimentaire (la phase continue ont connu un développement croissant au cours des années 80 et 90. Le processus d'aération liés à leurs activités de production est appelée l'expansion ou à fouetter. Le document présente les principaux-paramètres du procédé du point permanent de la formulation, la mise en œuvre processus dans les installations pilotes et à l'échelle industrielle, la caractérisation des produits finis, la base énergétique de l'échelle de processus en place, et le lien entre la formulation, émulsion préparation de l'expansion. Cette vue d'ensemble de l'opération d'expansion continue, nous a permis de mettre en évidence le fait qu'il ya des opérations de l'unité encore mal décrite par le génie des procédés et pour lesquels les méthodes et outils pour l'extrapolation et la prédiction sont encore à leurs balbutiements.

  4. Strategic Alignment of Business Intelligence

    OpenAIRE

    Cederberg, Niclas

    2010-01-01

    This thesis is about the concept of strategic alignment of business intelligence. It is based on a theoretical foundation that is used to define and explain business intelligence, data warehousing and strategic alignment. By combining a number of different methods for strategic alignment a framework for alignment of business intelligence is suggested. This framework addresses all different aspects of business intelligence identified as relevant for strategic alignment of business intelligence...

  5. PILOT optical alignment

    Science.gov (United States)

    Longval, Y.; Mot, B.; Ade, P.; André, Y.; Aumont, J.; Baustista, L.; Bernard, J.-Ph.; Bray, N.; de Bernardis, P.; Boulade, O.; Bousquet, F.; Bouzit, M.; Buttice, V.; Caillat, A.; Charra, M.; Chaigneau, M.; Crane, B.; Crussaire, J.-P.; Douchin, F.; Doumayrou, E.; Dubois, J.-P.; Engel, C.; Etcheto, P.; Gélot, P.; Griffin, M.; Foenard, G.; Grabarnik, S.; Hargrave, P..; Hughes, A.; Laureijs, R.; Lepennec, Y.; Leriche, B.; Maestre, S.; Maffei, B.; Martignac, J.; Marty, C.; Marty, W.; Masi, S.; Mirc, F.; Misawa, R.; Montel, J.; Montier, L.; Narbonne, J.; Nicot, J.-M.; Pajot, F.; Parot, G.; Pérot, E.; Pimentao, J.; Pisano, G.; Ponthieu, N.; Ristorcelli, I.; Rodriguez, L.; Roudil, G.; Salatino, M.; Savini, G.; Simonella, O.; Saccoccio, M.; Tapie, P.; Tauber, J.; Torre, J.-P.; Tucker, C.

    2016-07-01

    PILOT is a balloon-borne astronomy experiment designed to study the polarization of dust emission in the diffuse interstellar medium in our Galaxy at wavelengths 240 μm with an angular resolution about two arcminutes. Pilot optics is composed an off-axis Gregorian type telescope and a refractive re-imager system. All optical elements, except the primary mirror, are in a cryostat cooled to 3K. We combined the optical, 3D dimensional measurement methods and thermo-elastic modeling to perform the optical alignment. The talk describes the system analysis, the alignment procedure, and finally the performances obtained during the first flight in September 2015.

  6. Group Based Interference Alignment

    CERN Document Server

    Ma, Yanjun; Chen, Rui; Yao, Junliang

    2010-01-01

    in $K$-user single-input single-output (SISO) frequency selective fading interference channels, it is shown that the achievable multiplexing gain is almost surely $K/2$ by using interference alignment (IA). However when the signaling dimensions is limited, allocating all the resource to all the users simultaneously is not optimal. According to this problem, a group based interference alignment (GIA) scheme is proposed and a search algorithm is designed to get the group patterns and the resource allocation among them. Analysis results show that our proposed scheme achieves a higher multiplexing gain when the resource is limited.

  7. Orientation and Alignment Echoes

    CERN Document Server

    Karras, G; Billard, F; Lavorel, B; Hartmann, J -M; Faucher, O; Gershnabel, E; Prior, Y; Averbukh, I Sh

    2015-01-01

    We present what is probably the simplest classical system featuring the echo phenomenon - a collection of randomly oriented free rotors with dispersed rotational velocities. Following excitation by a pair of time-delayed impulsive kicks, the mean orientation/alignment of the ensemble exhibits multiple echoes and fractional echoes. We elucidate the mechanism of the echo formation by kick-induced filamentation of phase space, and provide the first experimental demonstration of classical alignment echoes in a thermal gas of CO_2 molecules excited by a pair of femtosecond laser pulses.

  8. Quantification, modelling and design for signal history dependent effects in mixed-signal SOI/SOS circuits; Quantification, modelisation et conception prenant en compte les etats anterieurs des signaux dans les circuits mixtes SOI/SOS

    Energy Technology Data Exchange (ETDEWEB)

    Edwards, C.F.; Redman-White, W.; Bracey, M.; Tenbroek, B.M.; Lee, M.S. [Southampton Univ., Dept. of Electronics and Computer Sciences (United Kingdom); Uren, M.J.; Brunson, K.M. [DERA Farnborough, GU, Hants (United Kingdom)

    1999-07-01

    This paper deals with how the radiation hardness of mixed signal SOI/SOS CMOS circuits is taken into account at both architectural terms as well as the the transistor level cell designs. The primary issue is to deal with divergent transistor threshold shifts, and to understand the effects of large amplitude non stationary signals on analogue cell behaviour. (authors)

  9. Sur quelques Ichthyurus du Tonkin

    NARCIS (Netherlands)

    Gestro, R.

    1906-01-01

    Les espèces d Ichthyurus du Tonkin connues jusqu’ici étaient seulement trois: denticornis Gestro, décrite d’abord du Tenasserim (récoltes de feu Mr. L. Fea) et retrouvée ensuite dans le Haut Tonkin par S. A. R. le Prince Henri d’Orléans; Henrici Gestro, découverte par ce même explorateur, et dont le

  10. Simulation of beamline alignment operations

    Energy Technology Data Exchange (ETDEWEB)

    Annese, C; Miller, M G

    1999-02-02

    The CORBA-based Simulator was a Laboratory Directed Research and Development (LDRD) project that applied simulation techniques to explore critical questions about distributed control systems. The simulator project used a three-prong approach that studied object-oriented distribution tools, computer network modeling, and simulation of key control system scenarios. The National Ignition Facility's (NIF) optical alignment system was modeled to study control system operations. The alignment of NIF's 192 beamlines is a large complex operation involving more than 100 computer systems and 8000 mechanized devices. The alignment process is defined by a detailed set of procedures; however, many of the steps are deterministic. The alignment steps for a poorly aligned component are similar to that of a nearly aligned component; however, additional operations/iterations are required to complete the process. Thus, the same alignment operations will require variable amounts of time to perform depending on the current alignment condition as well as other factors. Simulation of the alignment process is necessary to understand beamline alignment time requirements and how shared resources such as the Output Sensor and Target Alignment Sensor effect alignment efficiency. The simulation has provided alignment time estimates and other results based on documented alignment procedures and alignment experience gained in the laboratory. Computer communication time, mechanical hardware actuation times, image processing algorithm execution times, etc. have been experimentally determined and incorporated into the model. Previous analysis of alignment operations utilized average implementation times for all alignment operations. Resource sharing becomes rather simple to model when only average values are used. The time required to actually implement the many individual alignment operations will be quite dynamic. The simulation model estimates the time to complete an operation using

  11. Aligning Responsible Business Practices

    DEFF Research Database (Denmark)

    Weller, Angeli E.

    2017-01-01

    This article offers an in-depth case study of a global high tech manufacturer that aligned its ethics and compliance, corporate social responsibility, and sustainability practices. Few large companies organize their responsible business practices this way, despite conceptual relevance and calls...... and managers interested in understanding how responsible business practices may be collectively organized....

  12. MUON DETECTORS: ALIGNMENT

    CERN Multimedia

    G. Gomez and Y. Pakhotin

    2012-01-01

      A new track-based alignment for the DT chambers is ready for deployment: an offline tag has already been produced which will become part of the 52X Global Tag. This alignment was validated within the muon alignment group both at low and high momentum using a W/Z skim sample. It shows an improved mass resolution for pairs of stand-alone muons, improved curvature resolution at high momentum, and improved DT segment extrapolation residuals. The validation workflow for high-momentum muons used to depend solely on the “split cosmics” method, looking at the curvature difference between muon tracks reconstructed in the upper or lower half of CMS. The validation has now been extended to include energetic muons decaying from heavily boosted Zs: the di-muon invariant mass for global and stand-alone muons is reconstructed, and the invariant mass resolution is compared for different alignments. The main areas of development over the next few months will be preparing a new track-based C...

  13. Aligning Theory with Practice

    Science.gov (United States)

    Kurz, Terri L.; Batarelo, Ivana

    2009-01-01

    This article describes a structure to help preservice teachers get invaluable field experience by aligning theory with practice supported by the integration of elementary school children into their university mathematics methodology course. This course structure allowed preservice teachers to learn about teaching mathematics in a nonthreatening…

  14. Alignment of concerns

    DEFF Research Database (Denmark)

    Andersen, Tariq Osman; Bansler, Jørgen P.; Kensing, Finn;

    2014-01-01

    The emergence of patient-centered eHealth systems introduces new challenges, where patients come to play an increasingly important role. Realizing the promises requires an in-depth understanding of not only the technology, but also the needs of both clinicians and patients. However, insights from...... as a design rationale for successful eHealth, termed 'alignment of concerns'....

  15. Aligning Mental Representations

    DEFF Research Database (Denmark)

    Kano Glückstad, Fumiko

    2013-01-01

    on the application of the BMG to publicly available datasets, the Leuven natural concept database [3] representing semantic structures of domain knowledge possessed by individual subjects [3]. Results indicate that the BMG is potentially a model applicable to simulating the alignment of domain knowledge from...

  16. Non-depletion floating layer in SOI LDMOS for enhancing breakdown voltage and eliminating back-gate bias effect

    Institute of Scientific and Technical Information of China (English)

    Zheng Zhi; Li Wei; Li Ping

    2013-01-01

    A non-depletion floating layer silicon-on-insulator (NFL SOI) lateral double-diffused metal-oxide-semiconductor (LDMOS) is proposed and the NFL-assisted modulated field (NFLAMF) principle is investigated in this paper.Based on this principle,the floating layer can pin the potential for modulating bulk field.In particular,the accumulated high concentration of holes at the bottom of the NFL can efficiently shield the electric field of the SOI layer and enhance the dielectric field in the buried oxide layer (BOX).At variation of back-gate bias,the shielding charges of NFL can alsoeliminate back-gate effects.The simulated results indicate that the breakdown voltage (BV) is increased from 315 V to 558 V compared to the conventional reduced surface field (RESURF) SOI (CSOI) LDMOS,yielding a 77% improvement.Furthermore,due to the field shielding effect of the NFL,the device can maintain the same breakdown voltage of 558 V with a thinner BOX to resolve the thermal problem in an SOI device.

  17. A first single-photon avalanche diode fabricated in standard SOI CMOS technology with a full characterization of the device

    NARCIS (Netherlands)

    Lee, M.J.; Sun, P.; Charbon, E.

    2015-01-01

    This paper reports on the first implementation of a single-photon avalanche diode (SPAD) in standard silicon on insulator (SOI) complementary metal-oxide-semiconductor (CMOS) technology. The SPAD is realized in a circular shape, and it is based on a P+/N-well junction along with a P-well guard-ring

  18. Magnetic sensor with silicon on insulator structure for high temperature applications; SOI kozo wo mochiita koon`yo jiki sensor

    Energy Technology Data Exchange (ETDEWEB)

    Matsumoto, Y.; Kawai, H.; Terada, T.; Kawahito, S.; Ishida, M.; Nakamura, T. [Toyohashi University of Technology, Aichi (Japan)

    1996-09-20

    To enable stable magnetic measurement in high temperature surroundings, a Hall cell of the SOI structure (with a single-crystal Si layer formed on an insulating film) was experimentally fabricated, and its characteristics as a magnetic sensor were examined. This element can be mass-produced by use of the current semiconductor manufacturing technology. In the conventional method of element isolation using the pn-junction, backward leak currents across the pn-junction grow large at high temperatures, reducing sensitivity and increasing offset voltage (the Hall voltage at zero magnetic field) to disable the elements. Under the circumstances, an SOI structure in which elements are isolated by an SiO2 film were studied. Sensitivity and temperature characteristics are dependent on donor concentration. But there is a relationship of trade-off between sensitivity and the usable temperature range, and this means that a donor concentration fit for the given purpose needs be chosen. To inhibit the generation of the offset voltage, Hall element shapes and chip bonding methods were studied, and a magnetic sensor with an offset variation not more than {plus_minus}3mV was obtained. In an SOI magnetic sensor, the temperature range in which sensitivity remains constant expands as donor concentration is enhanced, and this permits the use of the SOI magnetic sensor in higher-temperature operations. 6 refs., 13 figs., 1 tab.

  19. Reduction of cross-talks between circuit and sensor layer in the Kyoto's X-ray astronomy SOI pixel sensors with Double-SOI wafer

    Science.gov (United States)

    Ohmura, Shunichi; Tsuru, Takeshi Go; Tanaka, Takaaki; Uchida, Hiroyuki; Takeda, Ayaki; Matsumura, Hideaki; Ito, Makoto; Arai, Yasuo; Kurachi, Ikuo; Miyoshi, Toshinobu; Nakashima, Shinya; Mori, Koji; Nishioka, Yusuke; Takebayashi, Nobuaki; Noda, Koki; Kohmura, Takayoshi; Tamasawa, Kouki; Ozawa, Yusuke; Sato, Tadashi; Konno, Takahiro; Kawahito, Shoji; Kagawa, Keiichiro; Yasutomi, Keita; Kamehama, Hiroki; Shrestha, Sumeet; Hara, Kazuhiko; Honda, Shunsuke

    2016-09-01

    We have been developing silicon-on-insulator pixel sensors, "XRPIXs," for future X-ray astronomy satellites. XRPIXs are equipped with a function of "event-driven readout," with which we can read out only hit pixels by trigger signals and hence realize good time resolution reaching ∼ 10 μs . The current version of XRPIX suffers from a problem that the spectral performance degrades in the event-driven readout mode compared to the frame-readout mode, in which all the pixels are read out serially. Previous studies have clarified that one of the causes is capacitive coupling between the sense node and the trigger signal line in the circuit layer. In order to solve the problem, we adopt the Double SOI structure having a middle silicon layer between the circuit and the sensor layers. We expect the middle silicon layer to work as an electrostatic shield and reduces the capacitive coupling. In this paper, we report the spectroscopic performance of XRPIX with the middle silicon layer. We successfully reduce the capacitive coupling and the readout noise.

  20. Design of a Self-Adaptive Bias SOI CMOS Power Amplifier%自适应偏置SOI CMOS功率放大器的设计

    Institute of Scientific and Technical Information of China (English)

    2016-01-01

    基于IBM 0.18 μm SOI CMOS工艺,设计了一款用于WLAN的高效率CMOS功率放大器.为了提高电路的可靠性,该放大器的驱动级和输出级均采用自适应偏置电路,使得共栅管和共源管的漏源电压分布更为均衡.该芯片采用两级共源共栅结构,片内集成了输入匹配电路和级间匹配电路.测试结果表明,该放大器的增益为23.9 dB,1 dB压缩点为23.9 dBm,效率为39.4%.当测试信号为IEEE 802.11g 54 Mb/s,在EVM为3%处,输出功率达到16.3 dBm.

  1. Masculinité et paternité à l’écart du monde du travail : le cas des pères au foyer en Belgique Masculinity and Paternity outside the Working World : the Case of Stay-at-home Fathers in Belgium

    Directory of Open Access Journals (Sweden)

    Laura Merla

    2011-03-01

    Full Text Available Cet article, rédigé à partir d’une recherche doctorale portant sur 21 pères au foyer, s’intéresse à la difficulté qu’il y a pour un homme de gérer une image positive de soi qui se détache de la référence au travail professionnel, et ce à la fois vis-à-vis de soi-même et dans les relations à autrui. Nous mettrons en lumière la subsistance des normes de la division sexuelle du travail qui transparaît au niveau des interactions avec autrui dans et en dehors du contexte domestique ; nous examinerons également les stratégies que les pères au foyer mettent en place pour réduire la portée identitaire et relationnelle du manque de légitimité auquel ils sont confrontés. Nous mettrons en particulier l’accent sur le rôle joué par la référence au travail professionnel à la fois dans la définition de soi “pour soi” et dans la présentation de soi à autrui. En conclusion, une définition originale de l’identité de genre sera proposée.Written on the basis of doctoral research on 21 stay-at-home fathers, this article focuses on men's difficulties in managing a positive self-image that prescinds from reference to professional work roles, both vis-à-vis themselves and in relation to others. We will shed light on the persistence of norms on the sexual division of labour which show through on the level of interactions with others in and outside of the domestic context ; we will also examine the strategies that stay-at-home fathers employ in reducing the identitary and relational import of the lack of legitimacy they are confronted with. We shall place particular accent on the role played by reference to professional work, both in defining self “for self” and in the presentation of self to others. In conclusion, an original definition of gender identity will be proposed.

  2. Assessment of SOI AND Gate, Type CHT-7408, for Operation in Extreme Temperature Environments

    Science.gov (United States)

    Patterson, Richard; Hammoud, Ahmad; Dones, Keishla Rivera

    2009-01-01

    Electronic parts based on silicon-on-insulator (SOI) technology are finding widespread applications due to their ability to operate in harsh environments and the benefits they offer as compared to their silicon counterparts. Due to their construction, they are tailored for high temperature operation and show good tolerance to radiation events. In addition, their inherent design lessens the formation of parasitic junctions, thereby reducing leakage currents, decreasing power consumption, and enhancing speed. These devices are typically rated in temperature capability from -55 C to about +225 C, and their characteristics over this temperature range are documented in data sheets. Since electronics in some of NASA space exploration missions are required to operate under extreme temperature conditions, both cold and hot, their characteristic behavior within the full temperature spectrum must be determined to establish suitability for use in space applications. The effects of extreme temperature exposure on the performance of a new commercial-off-the-shelf (COTS) SOI AND gate device were evaluated in this work. The high temperature, quad 2-inputs AND gate device, which was recently introduced by CISSOID, is fabricated using a CMOS SOI process. Some of the specifications of the CHT-7408 chip are listed in a table. By supplying a constant DC voltage to one gate input and a 10 kHz square wave into the other associated gate input, the chip was evaluated in terms of output response, output rise (t(sub r)) and fall times (tf), and propagation delays (using a 50% level between input and output during low to high (tPLH) and high to low (tPHL) transitions). The supply current of the gate circuit was also obtained. These parameters were recorded at various test temperatures between -195 C and +250 C using a Sun Systems environmental chamber programmed at a temperature rate of change of 10 C/min. In addition, the effects of thermal cycling on this chip were determined by exposing

  3. ABS: Sequence alignment by scanning

    KAUST Repository

    Bonny, Mohamed Talal

    2011-08-01

    Sequence alignment is an essential tool in almost any computational biology research. It processes large database sequences and considered to be high consumers of computation time. Heuristic algorithms are used to get approximate but fast results. We introduce fast alignment algorithm, called Alignment By Scanning (ABS), to provide an approximate alignment of two DNA sequences. We compare our algorithm with the well-known alignment algorithms, the FASTA (which is heuristic) and the \\'Needleman-Wunsch\\' (which is optimal). The proposed algorithm achieves up to 76% enhancement in alignment score when it is compared with the FASTA Algorithm. The evaluations are conducted using different lengths of DNA sequences. © 2011 IEEE.

  4. Fast global sequence alignment technique

    KAUST Repository

    Bonny, Mohamed Talal

    2011-11-01

    Bioinformatics database is growing exponentially in size. Processing these large amount of data may take hours of time even if super computers are used. One of the most important processing tool in Bioinformatics is sequence alignment. We introduce fast alignment algorithm, called \\'Alignment By Scanning\\' (ABS), to provide an approximate alignment of two DNA sequences. We compare our algorithm with the wellknown sequence alignment algorithms, the \\'GAP\\' (which is heuristic) and the \\'Needleman-Wunsch\\' (which is optimal). The proposed algorithm achieves up to 51% enhancement in alignment score when it is compared with the GAP Algorithm. The evaluations are conducted using different lengths of DNA sequences. © 2011 IEEE.

  5. Mode-converter and multiplexer based on SOI technology for few-mode fiber at 1550 nm

    Science.gov (United States)

    Garcia-Rodriguez, David; Corral, Juan L.; Griol, Amadeu; Llorente, Roberto

    2017-01-01

    The Asymmetric Directional Coupler (ADC) based on SOI (Silicon-on-Insulator) technology converts and couples the fundamental mode to the first higher order mode. The ADC is designed to achieve phase-matching condition, which is accomplished when both propagation constants are equal in each waveguide arm. Devices are fabricated in a SOI wafer with a 220 nm thick silicon layer. The refractive indexes of Si and SiO2 are nSi=3.47 and nSi02=1.46 respectively. The access waveguides (W1=0.45 μm) have been designed to propagate just the fundamental mode, TE0. The optimum width for the second waveguide was chosen to achieve the phase-matching condition for the TE1 mode, which corresponds to W2=0.962 μm. The coupling to the input and output waveguides is achieved through grating couplers. The input grating coupler will need to couple the LP01 mode from the SSMF (Standard Single-Mode Fiber) to the TE0 mode in the SOI waveguide; thus a typical design for a SOI coupler can be used. However, the output coupler must simultaneously couple the TE0 and TE1 modes in the SOI wide waveguide to the LP01 and LP11 modes in the FMF (Few-Mode Fiber). Input gratings are designed to have an area of 12x12 μm2 and a period of Λ=610 nm in order to maximize the optical power coupled between the fiber and the waveguide for an incident angle of 10 degrees. Output gratings are designed with the same period but distinct area (12.5x12.5 μm2) to correctly couple the LP01 and LP11 modes in the FMF.

  6. Application of SOI materials in optoelectronics%SOI材料在光电子学中的应用

    Institute of Scientific and Technical Information of China (English)

    陈媛媛; 杨笛

    2012-01-01

    SOI (silicon-on-insulater) material is an important kind of optical waveguide materials for silicon-based optoelectronics applications. In recent years, with the maturation of facture and manufacture technology of SOI material, the research on SOI-based optical waveguide devices have attracted more and more attentions. In this paper,the specific application of SOI material in silicon-based optoelectronics are introduced, including the recent developments in thermo-optic devices,electro-optic devices,optical coupler which connects sub-micron optical waveguide and fiber,integrated optoelectronic chip etc. Smaller waveguide cross-section is the developing direction of SOI-based optical waveguide devices in the future.%SOI材料是应用于硅基光电子学中的一种重要的光波导材料.近年来随着SOI材料制备和加工技术的成熟,SOI基光波导器件的研究日益受到人们的重视.文章介绍了SOI材料在光电子学领域的一些具体应用,包括了在热光器件、电光器件、亚微米波导器件与光纤的耦合器以及光电子集成芯片等方面的最新研究进展.更小的波导截面尺寸是未来SOI光波导器件发展的必然趋势.

  7. Le bal du loup

    CERN Multimedia

    Happy Children's Home

    2013-01-01

    The Bord'eau amateur theatre group will graciously perform a play of their creation Le bal du loup Saturday 19 October 2013 at 20:00 Sunday 20 October at 17:00 in the Théâtre des Grottes Rue Louis Favre 43, 1201 Genève Children from age 12 upwards. Summary: The new-elected mayoress of a small village would like to clean up the town by prohibiting alcohol and getting rid of its prostitutes. Then along comes « Massimo Lupo » the pimp... The performances will be given to support the Happy Children's Home charity, which runs a foster-home in Pokhara for Nepali children:  http://www.happychildrenshome.org/ Admission : minimum charge of 10 CHF per person requested, to cover the cost of technical assistance and theatre rental. Any profit will be used solely for the foster-home. At the end of each performance members of the HCH charity will be happy to answer any questions you may have. The theatre has 86 seats, thank you for reserv...

  8. Le collisionneur du futur?

    CERN Multimedia

    CERN Audiovisual Service

    2009-01-01

    Pourquoi deux études parallèles pour un même collisionneur linéaire ? Loin d’être un double effort et un gaspillage de ressources, ces deux études s’inscrivent dans une stratégie de complémentarité afin de fournir la meilleure technologie requise par la physique du futur. Vendredi 12 juin a eu lieu au CERN la première réunion conjointe CLIC et ILC. Elle n’a pas été avare de bons résultats et d’importantes décisions. Le Collisionneur Linéaire International (ILC) et le Collisionneur Linéaire Compact (CLIC) sont deux études qui font, tous deux, appel à des technologies de pointe. A première vue en compétition, les deux études sont en réalité complémentaires et elles ont un objectif commun : proposer dans les plus brefs délais et au moindre coût, l‘accélérateur linéaire le mieux adapté pour prendre le relais de la physique des très hautes énergies après le LHC.

  9. Formatt: Correcting protein multiple structural alignments by incorporating sequence alignment

    Directory of Open Access Journals (Sweden)

    Daniels Noah M

    2012-10-01

    Full Text Available Abstract Background The quality of multiple protein structure alignments are usually computed and assessed based on geometric functions of the coordinates of the backbone atoms from the protein chains. These purely geometric methods do not utilize directly protein sequence similarity, and in fact, determining the proper way to incorporate sequence similarity measures into the construction and assessment of protein multiple structure alignments has proved surprisingly difficult. Results We present Formatt, a multiple structure alignment based on the Matt purely geometric multiple structure alignment program, that also takes into account sequence similarity when constructing alignments. We show that Formatt outperforms Matt and other popular structure alignment programs on the popular HOMSTRAD benchmark. For the SABMark twilight zone benchmark set that captures more remote homology, Formatt and Matt outperform other programs; depending on choice of embedded sequence aligner, Formatt produces either better sequence and structural alignments with a smaller core size than Matt, or similarly sized alignments with better sequence similarity, for a small cost in average RMSD. Conclusions Considering sequence information as well as purely geometric information seems to improve quality of multiple structure alignments, though defining what constitutes the best alignment when sequence and structural measures would suggest different alignments remains a difficult open question.

  10. Optimizing SOI Slot Waveguide Fabrication Tolerances and Strip-Slot Coupling for Very Efficient Optical Sensing

    Directory of Open Access Journals (Sweden)

    Vittorio M. N. Passaro

    2012-02-01

    Full Text Available Slot waveguides are becoming more and more attractive optical components, especially for chemical and bio-chemical sensing. In this paper an accurate analysis of slot waveguide fabrication tolerances is carried out, in order to find optimum design criteria for either homogeneous or absorption sensing mechanisms, in cases of low and high aspect ratio slot waveguides. In particular, we have focused on Silicon On Insulator (SOI technology, representing the most popular technology for this kind of devices, simultaneously achieving high integration capabilities, small dimensions and low cost. An accurate analysis of single mode behavior for high aspect ratio slot waveguide has been also performed, in order to provide geometric limits for waveguide design purposes. Finally, the problem of coupling into a slot waveguide is addressed and a very compact and efficient slot coupler is proposed, whose geometry has been optimized to give a strip-slot-strip coupling efficiency close to 100%.

  11. Design of novel SOI 1 × 4 optical power splitter using seven horizontally slotted waveguides

    Science.gov (United States)

    Katz, Oded; Malka, Dror

    2017-07-01

    In this paper, we demonstrate a compact silicon on insulator (SOI) 1 × 4 optical power splitter using seven horizontal slotted waveguides. Aluminum nitride (AIN) surrounded by silicon (Si) was used to confine the optical field in the slot region. All of the power analysis has been done in transverse magnetic (TM) polarization mode and a compact optical power splitter as short as 14.5 μm was demonstrated. The splitter was designed by using full vectorial beam propagation method (FV-BPM) simulations. Numerical investigations show that this device can work across the whole C-band (1530-1565 nm) with excess loss better than 0.23 dB.

  12. Mapping the broadband polarization properties of linear 2D SOI photonic crystal waveguides.

    Science.gov (United States)

    Canning, John; Skivesen, Nina; Kristensen, Martin; Frandsen, Lars H; Lavrinenko, Andrei; Martelli, Cicero; Tetu, A

    2007-11-12

    Both quasi-TE and TM polarisation spectra for a silicon-on-insulator (SOI) waveguide are recorded over (1100-1700)nm using a broadband supercontinuum source. By studying both the input and output polarisation eigenstates we observe narrowband resonant cross coupling near the lowest quasi-TE mode cut-off. We also observe relatively broadband mixing between the two eigenstates to generate a complete photonic bandgap. By careful analysis of the output polarisation state we report on an inherent non-reciprocity between quasi TE and TM fundamental mode cross coupling. The nature of polarisation distinction in such bandgap structures is discussed in the context of polarisation scattering at an interface.

  13. A unified charge-based model for SOI MOSFETs applicable from intrinsic to heavily doped channel

    Institute of Scientific and Technical Information of China (English)

    Zhang Jian; Han Yu; Chan Mansun; He Jin; Zhou Xing-Ye; Zhang Li-Ning; Ma Yu-Tao; Chen Qin; Zhang Xu-Kai; Yang Zhang; Wang Rui-Fei

    2012-01-01

    A unified charge-based model for fully depleted silicon-on-insulator (SOI) metal-oxide semiconductor field-effect transistors (MOSFETs) is presented.The proposed model is accurate and applicable from intrinsic to heavily doped channels with various structure parameters.The framework starts from the one-dimensional Poisson-Boltzmann equation,and based on the full depletion approximation,an accurate inversion charge density equation is obtained.With the inversion charge density solution,the unified drain current expression is derived,and a unified terminal charge and intrinsic capacitance model is also derived in the quasi-static case.The validity and accuracy of the presented analytic model is proved by numerical simulations.

  14. Test of Convective Frequency Effects with SOI/MDI High-Degree Data

    CERN Document Server

    Rosenthal, C S; Kosovichev, A G; Nordlund, A A; Reiter, J; Rhodes, E J; Schou, J; Stein, R F; Trampedach, R

    1998-01-01

    Advances in hydrodynamical simulations have provided new insights into the effects of convection on the frequencies of solar oscillations. As more accurate observations become available, this may lead to an improved understanding of the dynamics of convection and the interaction between convection and pulsation (\\cite{Rosenthal+99}) . Recent high-resolution observations from the SOI/MDI instrument on the SOHO spacecraft have provided the so-far most-detailed observations of high-degree modes of solar oscillations, which are particularly sensitive to the near-surface properties of the Sun. Here we present preliminary results of a comparison between these observations and frequencies computed for models based on realistic simulations of near-surface convection. Such comparisons may be expected to help in identifying the causes of the remaining differences between the observed frequencies and those of solar models.

  15. Optimisation Design of Coupling Region Based on SOI Micro-Ring Resonator

    Directory of Open Access Journals (Sweden)

    Shubin Yan

    2014-12-01

    Full Text Available Design optimization of the coupling region is conducted in order to solve the difficulty of achieving a higher quality factor (Q for large size resonators based on silicon-on-insulator (SOI. Relations among coupling length, coupling ratio and quality factor of the optical cavities are theoretically analyzed. Resonators (R = 100 μm with different coupling styles, concentric, straight, and butterfly, are prepared by the micro-electro-mechanical-systems (MEMS process. Coupling experimental results show that micro-cavity of butterfly-coupled style obtains the narrowest (3 dB bandwidth, and the quality factor has been greatly improved. The results provide the foundation for realization of a large size, high-Q resonator, and its development and application in the integrated optical gyroscopes, filters, sensors, and other related fields.

  16. Universal trench design method for a high-voltage SOI trench LDMOS

    Institute of Scientific and Technical Information of China (English)

    Hu Xiarong; Zhang Bo; Luo Xiaorong; Li Zhaoji

    2012-01-01

    The design method for a high-voltage SOl trench LDMOS for various trench permittivities,widths and depths is introduced.A universal method for efficient design is presented for the first time,taking the trade-off between breakdown voltage (BV) and specific on-resistance (Rs,on) into account.The high-k (relative permittivity)dielectric is suitable to fill a shallow and wide trench while the low-k dielectric is suitable to fill a deep and narrow trench.An SOI LDMOS with a vacuum trench in the drift region is also discussed.Simulation results show that the high FOM BV2/Rs,on can be achieved with a trench filled with the low-k dielectric due to its shortened cell-pitch.

  17. Building blocks X-FAB SOI 0.18 μm

    Science.gov (United States)

    Cizel, J.-B.; Ahmad, S.; Callier, S.; Cornat, R.; Dulucq, F.; Fleury, J.; Martin-Chassard, G.; Raux, L.; de La Taille, C.; Thienpont, D.

    2015-02-01

    This work has been done in order to study a new technology provided by X-FAB named xt018. It is an SOI (Silicon On Insulator) technology with a minimal gate length of 180 nm. Building blocks have been done to test the advantages and drawbacks of this technology compared to the one currently used (AMS SiGe 0.35 μm). These building blocks have been designed to fit in an existing experience housed by the CALICE collaboration: the read-out chip for the Electromagnetic CALorimeter (ECAL) of the foreseen International Linear Collider (ILC). Performances will be compared to those of the SKIROC2 chip designed by the OMEGA laboratory, trying to fit the same requirements. The chip is being manufactured and will be back for measurements in December, the displayed results are only simulation results and thus the conclusions concerning the performances of these building blocks are subject to change.

  18. Impact of back-gate bias on the hysteresis effect in partially depleted SOI MOSFETs

    Institute of Scientific and Technical Information of China (English)

    Luo Jie-Xin; Chen Jing; Zhou Jian-Hua; Wu Qing-Qing; Chai Zhan; Yu Tao; Wang Xi

    2012-01-01

    The hysteresis effect in the output characteristics,originating from the floating body effect,has been measured in partially depleted(PD)silicon-on-insulator(SOl)MOSFETs at different back-gate biases.ID hysteresis has been developed to clarify the hysteresis characteristics.The fabricated devices show the positive and negative peaks in the ID hysteresis.The experimental results show that the ID hysteresis is sensitive to the back gate bias in 0.13μm PD SOI MOSFETs and does not vary monotonously with the back-gate bias.Based on the steady-state Shoclley-Read Hall(SRH)recombination theory,we have successfully interpreted the impact of the back-gate bias on the hysteresis effect in PD SOl MOSFETs.

  19. Development of an X-ray imaging system with SOI pixel detectors

    Science.gov (United States)

    Nishimura, Ryutaro; Arai, Yasuo; Miyoshi, Toshinobu; Hirano, Keiichi; Kishimoto, Shunji; Hashimoto, Ryo

    2016-09-01

    An X-ray imaging system employing pixel sensors in silicon-on-insulator technology is currently under development. The system consists of an SOI pixel detector (INTPIX4) and a DAQ system based on a multi-purpose readout board (SEABAS2). To correct a bottleneck in the total throughput of the DAQ of the first prototype, parallel processing of the data taking and storing processes and a FIFO buffer were implemented for the new DAQ release. Due to these upgrades, the DAQ throughput was improved from 6 Hz (41 Mbps) to 90 Hz (613 Mbps). The first X-ray imaging system with the new DAQ software release was tested using 33.3 keV and 9.5 keV mono X-rays for three-dimensional computerized tomography. The results of these tests are presented.

  20. MONOLITHIC ACTIVE PIXEL MATRIX WITH BINARY COUNTERS IN AN SOI PROCESS.

    Energy Technology Data Exchange (ETDEWEB)

    DUPTUCH,G.; YAREMA, R.

    2007-06-07

    The design of a Prototype monolithic active pixel matrix, designed in a 0.15 {micro}m CMOS SOI Process, is presented. The process allowed connection between the electronics and the silicon volume under the layer of buried oxide (BOX). The small size vias traversing through the BOX and implantation of small p-type islands in the n-type bulk result in a monolithic imager. During the acquisition time, all pixels register individual radiation events incrementing the counters. The counting rate is up to 1 MHz per pixel. The contents of counters are shifted out during the readout phase. The designed prototype is an array of 64 x 64 pixels and the pixel size is 26 x 26 {micro}m{sup 2}.

  1. Increase in the scattering of electric field lines in a new high voltage SOI MESFET

    Science.gov (United States)

    Anvarifard, Mohammad K.

    2016-09-01

    This paper illustrates a new efficient technique to enhance the critical features of a silicon-on-insulator metal-semiconductor field-effect transistor (SOI MESFET) applied in high voltage applications. The structure we proposed utilizes a new method to scatter the electric field lines along the channel region. Realization of two trenches with different materials, which a trench is created in the channel region and the other one is created in the buried oxide, helps the proposed structure to improve the breakdown voltage, driving current, drain-source conductance, minimum noise figure, unilateral power gain and output power density. Exploring the obtained results, the proposed structure has superior electrical performance in comparison to the conventional structure.

  2. Body charge modelling for accurate simulation of small-signal behaviour in floating body SOI

    Science.gov (United States)

    Benson, James; Redman-White, William; D'Halleweyn, Nele V.; Easson, Craig A.; Uren, Michael J.

    2002-04-01

    We show that careful modelling of body node elements in floating body PD-SOI MOSFET compact models is required in order to obtain accurate small-signal simulation results in the saturation region. The body network modifies the saturation output conductance of the device via the body-source transconductance, resulting in a pole/zero pair being introduced in the conductance-frequency response. We show that neglecting the presence of body charge in the saturation region can often yield inaccurate values for the body capacitances, which in turn can adversely affect the modelling of the output conductance above the pole/zero frequency. We conclude that the underlying cause of this problem is the use of separate models for the intrinsic and extrinsic capacitances. Finally, we present a simple saturation body charge model which can greatly improve small-signal simulation accuracy for floating body devices.

  3. Inflation by alignment

    Energy Technology Data Exchange (ETDEWEB)

    Burgess, C.P. [PH -TH Division, CERN,CH-1211, Genève 23 (Switzerland); Department of Physics & Astronomy, McMaster University,1280 Main Street West, Hamilton ON (Canada); Perimeter Institute for Theoretical Physics,31 Caroline Street North, Waterloo ON (Canada); Roest, Diederik [Van Swinderen Institute for Particle Physics and Gravity, University of Groningen,Nijenborgh 4, 9747 AG Groningen (Netherlands)

    2015-06-08

    Pseudo-Goldstone bosons (pGBs) can provide technically natural inflatons, as has been comparatively well-explored in the simplest axion examples. Although inflationary success requires trans-Planckian decay constants, f≳M{sub p}, several mechanisms have been proposed to obtain this, relying on (mis-)alignments between potential and kinetic energies in multiple-field models. We extend these mechanisms to a broader class of inflationary models, including in particular the exponential potentials that arise for pGB potentials based on noncompact groups (and so which might apply to moduli in an extra-dimensional setting). The resulting potentials provide natural large-field inflationary models and can predict a larger primordial tensor signal than is true for simpler single-field versions of these models. In so doing we provide a unified treatment of several alignment mechanisms, showing how each emerges as a limit of the more general setup.

  4. Aligning component upgrades

    Directory of Open Access Journals (Sweden)

    Roberto Di Cosmo

    2011-08-01

    Full Text Available Modern software systems, like GNU/Linux distributions or Eclipse-based development environment, are often deployed by selecting components out of large component repositories. Maintaining such software systems by performing component upgrades is a complex task, and the users need to have an expressive preferences language at their disposal to specify the kind of upgrades they are interested in. Recent research has shown that it is possible to develop solvers that handle preferences expressed as a combination of a few basic criteria used in the MISC competition, ranging from the number of new components to the freshness of the final configuration. In this work we introduce a set of new criteria that allow the users to specify their preferences for solutions with components aligned to the same upstream sources, provide an efficient encoding and report on the experimental results that prove that optimising these alignment criteria is a tractable problem in practice.

  5. Inflation by Alignment

    CERN Document Server

    Burgess, Cliff

    2015-01-01

    Pseudo-Goldstone bosons (pGBs) can provide technically natural inflatons, as has been comparatively well-explored in the simplest axion examples. Although inflationary success requires trans-Planckian decay constants, f > Mp, several mechanisms have been proposed to obtain this, relying on (mis-)alignments between potential and kinetic energies in multiple-field models. We extend these mechanisms to a broader class of inflationary models, including in particular the exponential potentials that arise for pGB potentials based on noncompact groups (and so which might apply to moduli in an extra-dimensional setting). The resulting potentials provide natural large-field inflationary models and can predict a larger primordial tensor signal than is true for simpler single-field versions of these models. In so doing we provide a unified treatment of several alignment mechanisms, showing how each emerges as a limit of the more general setup.

  6. Aligning component upgrades

    CERN Document Server

    Di Cosmo, Roberto; Michel, Claude; 10.4204/EPTCS.65.1

    2011-01-01

    Modern software systems, like GNU/Linux distributions or Eclipse-based development environment, are often deployed by selecting components out of large component repositories. Maintaining such software systems by performing component upgrades is a complex task, and the users need to have an expressive preferences language at their disposal to specify the kind of upgrades they are interested in. Recent research has shown that it is possible to develop solvers that handle preferences expressed as a combination of a few basic criteria used in the MISC competition, ranging from the number of new components to the freshness of the final configuration. In this work we introduce a set of new criteria that allow the users to specify their preferences for solutions with components aligned to the same upstream sources, provide an efficient encoding and report on the experimental results that prove that optimising these alignment criteria is a tractable problem in practice.

  7. Alignment of concerns

    DEFF Research Database (Denmark)

    Andersen, Tariq Osman; Bansler, Jørgen P.; Kensing, Finn

    E-health promises to enable and support active patient participation in chronic care. However, these fairly recent innovations are complicated matters and emphasize significant challenges, such as patients’ and clinicians’ different ways of conceptualizing disease and illness. Informed by insight...... from medical phenomenology and our own empirical work in telemonitoring and medical care of heart patients, we propose a design rationale for e-health systems conceptualized as the ‘alignment of concerns’....

  8. Orbit IMU alignment: Error analysis

    Science.gov (United States)

    Corson, R. W.

    1980-01-01

    A comprehensive accuracy analysis of orbit inertial measurement unit (IMU) alignments using the shuttle star trackers was completed and the results are presented. Monte Carlo techniques were used in a computer simulation of the IMU alignment hardware and software systems to: (1) determine the expected Space Transportation System 1 Flight (STS-1) manual mode IMU alignment accuracy; (2) investigate the accuracy of alignments in later shuttle flights when the automatic mode of star acquisition may be used; and (3) verify that an analytical model previously used for estimating the alignment error is a valid model. The analysis results do not differ significantly from expectations. The standard deviation in the IMU alignment error for STS-1 alignments was determined to the 68 arc seconds per axis. This corresponds to a 99.7% probability that the magnitude of the total alignment error is less than 258 arc seconds.

  9. Nuclear reactor alignment plate configuration

    Energy Technology Data Exchange (ETDEWEB)

    Altman, David A; Forsyth, David R; Smith, Richard E; Singleton, Norman R

    2014-01-28

    An alignment plate that is attached to a core barrel of a pressurized water reactor and fits within slots within a top plate of a lower core shroud and upper core plate to maintain lateral alignment of the reactor internals. The alignment plate is connected to the core barrel through two vertically-spaced dowel pins that extend from the outside surface of the core barrel through a reinforcement pad and into corresponding holes in the alignment plate. Additionally, threaded fasteners are inserted around the perimeter of the reinforcement pad and into the alignment plate to further secure the alignment plate to the core barrel. A fillet weld also is deposited around the perimeter of the reinforcement pad. To accomodate thermal growth between the alignment plate and the core barrel, a gap is left above, below and at both sides of one of the dowel pins in the alignment plate holes through with the dowel pins pass.

  10. Naked, Deformed, Violated Body. A Montage in the Histoire(s) du cinema of Jean-Luc Godard

    National Research Council Canada - National Science Library

    Alberto Brodesco

    2013-01-01

    The article analyses Histoire(s) du cinéma (1988-1998), a cinematic essay by Jean-Luc Godard, and in particular it focuses on the controversial montage in which the French director aligns extracts from a pornographic film, Tod...

  11. "To Break Asunder along the Lesions of Race". The Critical Race Theory of W.E.B. Du Bois

    Science.gov (United States)

    Rashid, Kamau

    2011-01-01

    In addition to its beginnings within legal scholarship, Critical Race Theory (CRT) is intimately aligned with the long tradition of African American social critique, which sought to interrogate the intractable nature of racism and White supremacy. Within this intellectual tradition, the works of W.E.B. Du Bois are of critical significance. Du…

  12. Fourth-Order Contour Mode ZnO-on-SOI Disk Resonators for Mass Sensing Applications

    Directory of Open Access Journals (Sweden)

    Ivan Rivera

    2015-04-01

    Full Text Available In this work, we have investigated the design, fabrication and testing of ZnO-on-SOI fourth-order contour mode disk resonators for mass sensing applications. This study aims to unveil the possibility for real-time practical mass sensing applications by using high-Q ZnO-on-SOI contour-mode resonators while taking into account their unique modal characteristics. Through focused ion beam (FIB direct-write metal deposition techniques, the effects of localized mass loading on the surface of three extensional mode devices have been investigated. Ten microfabricated 40 mm-radius disk resonators, which all have a 20 mm-thick silicon device layer and 1 mm-thick ZnO transducer layer but varied anchor widths and numbers, have exhibited resonant frequencies ranging from 84.9 MHz to 86.7 MHz with Q factors exceeding 6000 (in air and 10,000 (in vacuum, respectively. It has been found that the added mass at the nodal locations leads to noticeable Q-factor degradation along with lower induced frequency drift, thereby resulting in reduced mass sensitivity. All three measured devices have shown a mass sensitivity of ~1.17 Hz·fg−1 at the maximum displacement points with less than 33.3 ppm of deviation in term of fractional frequency change. This mass sensitivity is significantly higher than 0.334 Hz·fg−1 at the nodal points. Moreover, the limit of detection (LOD for this resonant mass sensor was determined to be 367 ag and 1290 ag (1 ag = 10−18 g for loaded mass at the maximum and minimum displacement points, accordingly.

  13. Fabrication and simulation of single crystal p-type Si nanowire using SOI technology

    Energy Technology Data Exchange (ETDEWEB)

    Dehzangi, Arash, E-mail: arashd53@hotmail.com [Institute of Microengineering and Nanoelectronics (IMEN), Universiti Kebangsaan Malaysia, 43600 Bangi, Selangor (Malaysia); Larki, Farhad [Institute of Microengineering and Nanoelectronics (IMEN), Universiti Kebangsaan Malaysia, 43600 Bangi, Selangor (Malaysia); Naseri, Mahmud G. [Department of Physics, Faculty of Science, Malayer University, Malayer, Hamedan (Iran, Islamic Republic of); Navasery, Manizheh [Department of Physics, Faculty of Science, Universiti Putra Malaysia, 43400 Serdang, Selangor (Malaysia); Majlis, Burhanuddin Y.; Razip Wee, Mohd F. [Institute of Microengineering and Nanoelectronics (IMEN), Universiti Kebangsaan Malaysia, 43600 Bangi, Selangor (Malaysia); Halimah, M.K. [Department of Physics, Faculty of Science, Universiti Putra Malaysia, 43400 Serdang, Selangor (Malaysia); Islam, Md. Shabiul; Md Ali, Sawal H. [Institute of Microengineering and Nanoelectronics (IMEN), Universiti Kebangsaan Malaysia, 43600 Bangi, Selangor (Malaysia); Saion, Elias [Department of Physics, Faculty of Science, Universiti Putra Malaysia, 43400 Serdang, Selangor (Malaysia)

    2015-04-15

    Highlights: • Single crystal silicon nanowire is fabricated on Si on insulator substrate, using atomic force microscope (AFM) nanolithography and KOH + IPA chemical wet etching. • Some of major parameters in fabrication process, such as writing speed and applied voltage along with KOH etching depth are investigated, and then the I–V characteristic of Si nanowires is measured. • For better understanding of the charge transmission through the nanowire, 3D-TCAD simulation is performed to simulate the Si nanowires with the same size of the fabricated ones, and variation of majority and minority carriers, hole quasi-Fermi level and generation/recombination rate are investigated. - Abstract: Si nanowires (SiNWs) as building blocks for nanostructured materials and nanoelectronics have attracted much attention due to their major role in device fabrication. In the present work a top-down fabrication approach as atomic force microscope (AFM) nanolithography was performed on Si on insulator (SOI) substrate to fabricate a single crystal p-type SiNW. To draw oxide patterns on top of the SOI substrate local anodic oxidation was carried out by AFM in contact mode. After the oxidation procedure, an optimized solution of 30 wt.% KOH with 10 vol.% IPA for wet etching at 63 °C was applied to extract the nanostructure. The fabricated SiNW had 70–85 nm full width at half maximum width, 90 nm thickness and 4 μm length. The SiNW was simulated using Sentaurus 3D software with the exact same size of the fabricated device. I–V characterization of the SiNW was measured and compared with simulation results. Using simulation results variation of carrier's concentrations, valence band edge energy and recombination generation rate for different applied voltage were investigated.

  14. Improving breakdown voltage performance of SOI power device with folded drift region

    Science.gov (United States)

    Qi, Li; Hai-Ou, Li; Ping-Jiang, Huang; Gong-Li, Xiao; Nian-Jiong, Yang

    2016-07-01

    A novel silicon-on-insulator (SOI) high breakdown voltage (BV) power device with interlaced dielectric trenches (IDT) and N/P pillars is proposed. In the studied structure, the drift region is folded by IDT embedded in the active layer, which results in an increase of length of ionization integral remarkably. The crowding phenomenon of electric field in the corner of IDT is relieved by the N/P pillars. Both traits improve two key factors of BV, the ionization integral length and electric field magnitude, and thus BV is significantly enhanced. The electric field in the dielectric layer is enhanced and a major portion of bias is borne by the oxide layer due to the accumulation of inverse charges (holes) at the corner of IDT. The average value of the lateral electric field of the proposed device reaches 60 V/μm with a 10 μm drift length, which increases by 200% in comparison to the conventional SOI LDMOS, resulting in a breakdown voltage of 607 V. Project supported by the Guangxi Natural Science Foundation of China (Grant Nos. 2013GXNSFAA019335 and 2015GXNSFAA139300), Guangxi Experiment Center of Information Science of China (Grant No. YB1406), Guangxi Key Laboratory of Wireless Wideband Communication and Signal Processing of China, Key Laboratory of Cognitive Radio and Information Processing (Grant No. GXKL061505), Guangxi Key Laboratory of Automobile Components and Vehicle Technology of China (Grant No. 2014KFMS04), and the National Natural Science Foundation of China (Grant Nos. 61361011, 61274077, and 61464003).

  15. Effets du fluor et du phosphogypse chez les organismes marins

    OpenAIRE

    Martin, J.L.; Le Guellec, Anne-marie; Cosson, R.

    1982-01-01

    Dans le cadre général des recherches visant à déterminer l'action des effluents industriels et plus précisément du fluor dans le cas de cette étude, le programme dont les résultats sont présentés avait pour but de déterminer les effets de cet élément sur les organismes marins. Trois aspects essentiels ont été envisagés : - Effets létaux du fluor ; - effets du fluor sur certaines fonctions éthologiques ; - bio-accumulation de l'élément par les organismes marins.

  16. Seeking the perfect alignment

    CERN Multimedia

    2002-01-01

    The first full-scale tests of the ATLAS Muon Spectrometer are about to begin in Prévessin. The set-up includes several layers of Monitored Drift Tubes Chambers (MDTs) and will allow tests of the performance of the detectors and of their highly accurate alignment system.   Monitored Drift Chambers in Building 887 in Prévessin, where they are just about to be tested. Muon chambers are keeping the ATLAS Muon Spectrometer team quite busy this summer. Now that most people go on holiday, the beam and alignment tests for these chambers are just starting. These chambers will measure with high accuracy the momentum of high-energy muons, and this implies very demanding requirements for their alignment. The MDT chambers consist of drift tubes, which are gas-filled metal tubes, 3 cm in diameter, with wires running down their axes. With high voltage between the wire and the tube wall, the ionisation due to traversing muons is detected as electrical pulses. With careful timing of the pulses, the position of the muon t...

  17. RECAT - Redundant Channel Alignment Technique

    Science.gov (United States)

    2016-06-07

    distribution unlimited 13. SUPPLEMENTARY NOTES NUWC2015 14. ABSTRACT A problem in the analog-to- digital , (A/D), conversion of broadband tape recorded...Alignment Technique, is used to align data taken on one pass with data from any other pass. The accuracy of this alignment is a function of the digital ...Redundant Channel Alignment Technique; analog-to- digital ; A/D; Broadband Bearing Time Processing 16. SECURITY CLASSIFICATION OF: 17. LIMITATION OF

  18. Main: 1DU5 [RPSD[Archive

    Lifescience Database Archive (English)

    Full Text Available 1DU5 トウモロコシ Corn Zea mays L. Zeamatin Precursor. Name=Zlp; Zea Mays Molecule: Zeama...NNACPVFKKDEYCCVGSAANDCHPTNYSRYFKGQCPDAYSYPKDDATSTFTCPAGTNYKVVFCP corn_1DU5.jpg ...

  19. L’intériorité désertée et le fond du cœur

    Directory of Open Access Journals (Sweden)

    Eric Dubreucq

    2005-04-01

    Full Text Available Cette étude cherchera à montrer qu’une lecture des textes autographes de la liasse 8 des Pensées de Pascal titrée "Divertissement" permet de remonter à une figure du rapport à soi originale et distincte de la forme ultérieure de la subjectivité. Il est nécessaire pour cela de partir de l’étude des fragments manuscrits et d’une réflexion sur la méthode permettant d’en obtenir une lecture, et d’en produire des copies figurées. Sur cette base, il est possible de montrer que l’intériorité pascalienne se définit comme désertée par la présence divine : le fond du coeur est dans "l’homme sans Dieu" un gouffre infini et la connaissance de soi une saisie de son néant propre.This study will analyze the eighth part of Pascal’s Pensées ("Divertissement" and put in light that it forms a specific kind of relationship to oneself, that occurred before our present subjectivity. In that purpose, we must consider the autographs and have a method to get the text readable, with figured copies. On that basis, it may be shown that pascalian personal interior is an inside desert space, left by god : in the "man without God", the inside of the heart is an infinite empty hole and the knowledge of oneself is a perception of one’s nothingness.

  20. l’anarchie des innocences de Michel Dallaire ou pour une éthique du geste créateur

    Directory of Open Access Journals (Sweden)

    Johanne Melançon

    2016-12-01

    Full Text Available Dans l’anarchie des innocences (2007, Michel Dallaire propose une éthique de la création artistique, en particulier de l’écriture. Pour Dallaire, l’altérité est nécessaire au travail de création tel qu’il le conçoit et l’écriture non seulement exige à la fois un mouvement vers l’autre et vers soi, mais comporte nécessairement une dimension éthique qui prend la forme d’une critique sociale, une condamnation de l’apathie, de l’indifférence et de l’individualisme de la société contemporaine. Dans ce récit poétique, chaque personnage qui surgit sur l’écran de l’ordinateur du narrateur-écrivain – soit le journaliste, la dame aux crevettes, la mouche Gertrude, le voisin musicien et le peintre Coleslaw – constitue une facette de l’expression de sa révolte. Inspiré par Le défaut des ruines est d’avoir des habitants (1957 du poète québécois Roland Giguère, Dallaire met donc en scène un « bon gars » qui tente d’effectuer une révolution intérieure. Celui-ci cherche à affirmer sa différence et son désir de liberté dans un rapport critique avec la société dans laquelle il évolue. Pour y arriver, il effectue une plongée en soi, par l’écriture. Sa métamorphose souhaitée est cependant toujours à recommencer.

  1. Method for alignment of microwires

    Energy Technology Data Exchange (ETDEWEB)

    Beardslee, Joseph A.; Lewis, Nathan S.; Sadtler, Bryce

    2017-01-24

    A method of aligning microwires includes modifying the microwires so they are more responsive to a magnetic field. The method also includes using a magnetic field so as to magnetically align the microwires. The method can further include capturing the microwires in a solid support structure that retains the longitudinal alignment of the microwires when the magnetic field is not applied to the microwires.

  2. Gestion durable du paysage

    Directory of Open Access Journals (Sweden)

    Jean-David Gerber

    2009-03-01

    Full Text Available Le paysage est de plus en plus perçu comme une ressource. À ce titre, il est nécessaire de trouver des instruments juridiques, politiques ou économiques susceptibles de gérer cette « ressource-paysage » sur le long terme. Le gouvernement suisse a introduit récemment l’instrument des parcs naturels régionaux, organisés selon le modèle français, dans sa législation de protection de la nature et du paysage. Une mise en regard des nouveaux parcs avec des structures de gestion beaucoup plus anciennes, les bourgeoisies et les corporations, permet de mettre en évidence les forces et les faiblesses de chacun de ces instruments dans leur contribution à résoudre les rivalités d’usage entre acteurs utilisant ou influençant la ressource paysage. Cette comparaison permet de formuler des recommandations pratiques concernant la gestion de cette ressource.The landscape is increasingly perceived as a resource. For this reason, it is necessary to find legal, political and economic instruments that will succeed in managing this “resource landscape” in the long term. The Swiss government recently introduced the instrument of regional nature parks into the legislation governing nature and landscape preservation; the proposed parks are organized on the basis of the French model. The examination of the new parks from the perspective of much older management structures, i.e. the civic municipalities (bourgeoisies and corporations, makes it possible to demonstrate the strengths and weaknesses of each of these instruments in their contribution to the resolution of use rivalries between actors who use or influence the resource landscape. This comparison also enables the formulation of practical recommendations regarding the management of this resource.

  3. Cri du Chat syndrome

    Directory of Open Access Journals (Sweden)

    Cerruti Mainardi Paola

    2006-09-01

    Full Text Available Abstract The Cri du Chat syndrome (CdCS is a genetic disease resulting from a deletion of variable size occurring on the short arm of chromosome 5 (5p-. The incidence ranges from 1:15,000 to 1:50,000 live-born infants. The main clinical features are a high-pitched monochromatic cry, microcephaly, broad nasal bridge, epicanthal folds, micrognathia, abnormal dermatoglyphics, and severe psychomotor and mental retardation. Malformations, although not very frequent, may be present: cardiac, neurological and renal abnormalities, preauricular tags, syndactyly, hypospadias, and cryptorchidism. Molecular cytogenetic analysis has allowed a cytogenetic and phenotypic map of 5p to be defined, even if results from the studies reported up to now are not completely in agreement. Genotype-phenotype correlation studies showed a clinical and cytogenetic variability. The identification of phenotypic subsets associated with a specific size and type of deletion is of diagnostic and prognostic relevance. Specific growth and psychomotor development charts have been established. Two genes, Semaphorin F (SEMAF and δ-catenin (CTNND2, which have been mapped to the "critical regions", are potentially involved in cerebral development and their deletion may be associated with mental retardation in CdCS patients. Deletion of the telomerase reverse transcriptase (hTERT gene, localised to 5p15.33, could contribute to the phenotypic changes in CdCS. The critical regions were recently refined by using array comparative genomic hybridisation. The cat-like cry critical region was further narrowed using quantitative polymerase chain reaction (PCR and three candidate genes were characterised in this region. The diagnosis is based on typical clinical manifestations. Karyotype analysis and, in doubtful cases, FISH analysis will confirm the diagnosis. There is no specific therapy for CdCS but early rehabilitative and educational interventions improve the prognosis and considerable

  4. « Soi-même » comme un « autre ». Les histoires coloniales d'Ahmad Tawfîq al-Madanî (1899-1983

    Directory of Open Access Journals (Sweden)

    James McDougall

    2009-05-01

    Full Text Available Dans l'optique de contribuer au dépassement des récits coloniaux ou nationalistes, cet article esquisse une relecture critique de l'histoire culturelle et intellectuelle de l'entre-deux-guerres au Maghreb, à travers un acteur politique et intellectuel parfois méconnu. Son œuvre, sa représentation de soi (dans ses mémoires donnent des points d'appui pour une analyse qui remettrait un certain type (salafiste de discours nationaliste — discours dont al-Madanî se fait en quelque sorte le symbole — dans le contexte particulier des conditions de la production politique, intellectuelle et culturelle en Afrique du Nord française. Opérant une rupture avec une pratique qui consiste à retranscrire les propres termes du discours nationaliste en présentant celui-ci comme une « restauration de l'histoire », nous nous efforcerons de montrer comment une stratégie d'invention historiographique, liée au mouvement réformiste musulman en Algérie, et conçue dans une relation « dialogique » intense avec la domination coloniale, refonde la conception de communauté en tant que « nation ». Cette conception particulière de la nation, et le rôle d'al-Madanî comme producteur de celle-ci, se voient dans ses relations complexes avec la situation coloniale qui leur donne naissance, et avec le mouvement révolutionnaire qui finira par arracher l'indépendance.

  5. Les paradoxes du littoral Swahili

    Directory of Open Access Journals (Sweden)

    François Bart

    2008-10-01

    Full Text Available Le contact entre l'océan Indien occidental et le continent africain a forgé l'identité et l'originalité du littoral swahili. Cette interface, longue d'environ 2 000 kilomètres, du sud de la Somalie au nord du Mozambique, constitue un monde original où, au gré de traditions anciennes de circulation maritime et continentale se sont diffusées et mêlées des influences culturelles venues du continent africain, de la péninsule arabique et de la péninsule indienne. Le développement du continent, du littoral et des archipels s'inscrit dans une double logique de fragmentation et d'ouverture au monde. Dans cette vaste aire géographique, le rôle de relais des îles et des axes de pénétration continentale à partir des ports est essentiel.The identity and the original features of the Swahili seashore mainly proceed from the contact of African mainland and western indian Ocean. This coastal interface, stretching over 2 000 kilometres from southern Somalia to northern Mozambique, is characterized by ancient traditions of trade movements through maritime areas and mainland as well, which spread and mixed different cultural influences originating from Africa and both Arabic and Indian peninsulas. The development of this area is linked to both fragmentation and opening dynamics. In such a wide area, the relaying function of islands and continental corridors from main harbours is very important.

  6. Disparaître dans la fiction. La traversée du miroir du Docteur Pasavento

    Directory of Open Access Journals (Sweden)

    Charline Pluvinet

    2010-09-01

    Full Text Available Cet article s’attache à explorer dans Docteur Pasavento les modalités et les enjeux d’une réinvention fictionnelle de soi qui se déploie selon un dispositif complexe : le personnage éponyme, qui orchestre sa propre disparition pour se donner de nouvelles identités fictives, est lui-même une projection de l’écrivain. Se réalise dans le roman une alliance entre l’aspiration à disparaître et le désir de rendre indistinctes fiction et réalité, que nous proposons d’éclairer par la métaphore carrollienne de la traversée du miroir où ces mouvements se conjuguent. Il s’agira de rendre perceptible la dynamique fictionnelle qui anime l’écriture romanesque d’Enrique Vila-Matas. This article endeavours to explore the stakes and modalities of the fictional re-invention of the self that takes place in Docteur Pasavento.In the novel, this reinvention arranges itself in accordance to a complex scheme : by orchestrating his own disappearance in order to confer upon himself new fictitious identities, the eponymous character of the novel becomes a projection of the author himself. In the novel, the aspiration to disappear is thus unified with a desire to blur the boundaries between fiction and reality. I intend to shed light on this union by invoking the Carrollian metaphor of passing “through the looking-glass”. The intention of this article is to render evident the fictional dynamism that underpins the novelistic writings of Enrique Vila-Matas.

  7. ETUDE GEOCHIMIQUE ET ISOTOPIQUE DES EAUX SUPERFICIELLES DU BASSIN VERSANT DU FURAN ET DES EAUX MINERALES DU GRABEN DU FOREZ, EST DU MASSIF CENTRAL FRANÇAIS

    OpenAIRE

    Gal, Frédérick

    2005-01-01

    Ce travail est basé sur l'étude d'un continuum eau de pluie – eau de surface – eau minérale, en utilisant différents outils chimiques et géochimiques. La zone d'étude se situe en bordure Est du Massif Central Français. Elle comprend des entités géographiques et géologiques variées (complexe granito-gneissique et cristallophyllien – Monts du Forez et du Lyonnais d'âge hercynien, graben Oligocène du Forez à venues volcaniques miocènes).La première partie repose sur l'étude en isotopes stables (...

  8. Device Structure and Fabricating Method for SOI LIGBT/LDMOS Integrated with Anti-ESD Diode%集成抗ESD二极管的SOI LIGBT/LDMOS器件结构及其制作方法

    Institute of Scientific and Technical Information of China (English)

    张海鹏; 汪沁; 孙玲玲; 高明煜; 李文钧; 吕幼华; 刘国华; 汪洁

    2006-01-01

    为探索与国内VLSI制造工艺兼容的新型SOI LIGBT/LDMOS器件与PIC的设计理论和工艺实现方法,首次提出含有抗ESD二极管的集成SOI LIGBT/LDMOS器件截面结构和版图结构,并根据器件结构给出了阻性负载时器件的大信号等效电路.探讨了该结构器件的VLSI工艺实现方法,设计了工艺流程.讨论了设计抗ESD二极管相关参数所需考虑的主要因素,并给出了结构实现的工艺控制要求.

  9. Characterization of Si/SiGe/Si Deposited on SIMOX SOI by Synchrotron Radiation X-Ray Double-crystal Topography

    Institute of Scientific and Technical Information of China (English)

    Ma Tongda; Tu Hailing; Hu Guangyong; Wang Jing

    2004-01-01

    The synchrotron X-ray double-crystal topography was employed to investigate the structure of Si/SiGe/Si deposited on SIMOX SOI. Rocking curves with three diffraction peaks were acquired before and after 180° rotation of samples. Double-crystal topographs taken at the full width at half maximum (FWHM) of the three peaks differ from each other. Many defects appear in the Si layers that are likely related to the tilt between SOI and epitaxial layers.

  10. Alignment of suprathermally rotating grains

    Science.gov (United States)

    Lazarian, A.

    1995-12-01

    It is shown that mechanical alignment can be efficient for suprathermally rotating grains, provided that they drift with supersonic velocities. Such a drift should be widely spread due to both Alfvenic waves and ambipolar diffusion. Moreover, if suprathermal rotation is caused by grain interaction with a radiative flux, it is shown that mechanical alignment may be present even in the absence of supersonic drift. This means that the range of applicability of mechanical alignment is wider than generally accepted and that it can rival the paramagnetic one. We also study the latter mechanism and re-examine the interplay between poisoning of active sites and desorption of molecules blocking the access to the active sites of H_2 formation, in order to explain the observed poor alignment of small grains and good alignment of large grains. To obtain a more comprehensive picture of alignment, we briefly discuss the alignment by radiation fluxes and by grain magnetic moments.

  11. Semiautomated improvement of RNA alignments

    DEFF Research Database (Denmark)

    Andersen, Ebbe Sloth; Lind-Thomsen, Allan; Knudsen, Bjarne

    2007-01-01

    We have developed a semiautomated RNA sequence editor (SARSE) that integrates tools for analyzing RNA alignments. The editor highlights different properties of the alignment by color, and its integrated analysis tools prevent the introduction of errors when doing alignment editing. SARSE readily...... connects to external tools to provide a flexible semiautomatic editing environment. A new method, Pcluster, is introduced for dividing the sequences of an RNA alignment into subgroups with secondary structure differences. Pcluster was used to evaluate 574 seed alignments obtained from the Rfam database...... and we identified 71 alignments with significant prediction of inconsistent base pairs and 102 alignments with significant prediction of novel base pairs. Four RNA families were used to illustrate how SARSE can be used to manually or automatically correct the inconsistent base pairs detected by Pcluster...

  12. CELT optics Alignment Procedure

    Science.gov (United States)

    Mast, Terry S.; Nelson, Jerry E.; Chanan, Gary A.; Noethe, Lothar

    2003-01-01

    The California Extremely Large Telescope (CELT) is a project to build a 30-meter diameter telescope for research in astronomy at visible and infrared wavelengths. The current optical design calls for a primary, secondary, and tertiary mirror with Ritchey-Chretién foci at two Nasmyth platforms. The primary mirror is a mosaic of 1080 actively-stabilized hexagonal segments. This paper summarizes a CELT report that describes a step-by-step procedure for aligning the many degrees of freedom of the CELT optics.

  13. ATLAS Inner Detector Alignment

    CERN Document Server

    Bocci, A

    2008-01-01

    The ATLAS experiment is a multi-purpose particle detector that will study high-energy particle collisions produced by the Large Hadron Collider at CERN. In order to achieve its physics goals, the ATLAS tracking requires that the positions of the silicon detector elements have to be known to a precision better than 10 μm. Several track-based alignment algorithms have been developed for the Inner Detector. An extensive validation has been performed with simulated events and real data coming from the ATLAS. Results from such validation are reported in this paper.

  14. TSGC and JSC Alignment

    Science.gov (United States)

    Sanchez, Humberto

    2013-01-01

    NASA and the SGCs are, by design, intended to work closely together and have synergistic Vision, Mission, and Goals. The TSGC affiliates and JSC have been working together, but not always in a concise, coordinated, nor strategic manner. Today we have a couple of simple ideas to present about how TSGC and JSC have started to work together in a more concise, coordinated, and strategic manner, and how JSC and non-TSG Jurisdiction members have started to collaborate: Idea I: TSGC and JSC Technical Alignment Idea II: Concept of Clusters.

  15. Comparison of Two Forced Alignment Systems for Aligning Bribri Speech

    Directory of Open Access Journals (Sweden)

    Rolando Coto-Solano

    2017-04-01

    Full Text Available Forced alignment provides drastic savings in time when aligning speech recordings and is particularly useful for the study of Indigenous languages, which are severely under-resourced in corpora and models. Here we compare two forced alignment systems, FAVE-align and EasyAlign, to determine which one provides more precision when processing running speech in the Chibchan language Bribri. We aligned a segment of a story narrated in Bribri and compared the errors in finding the center of the words and the edges of phonemes when compared with the manual correction. FAVE-align showed better performance: It has an error of 7% compared to 24% with EasyAlign when finding the center of words, and errors of 22~24 ms when finding the edges of phonemes, compared to errors of 86~130 ms with EasyAlign. In addition to this, EasyAlign failed to detect 7% of phonemes, while also inserting 58 spurious phones into the transcription. Future research includes verifying these results for other genres and other Chibchan languages. Finally, these results provide additional evidence for the applicability of natural language processing methods to Chibchan languages and point to future work such as the construction of corpora and the training of automated speech recognition systems.

  16. Réflexion sur l’origine du processus de segmentation du marche du travail

    Directory of Open Access Journals (Sweden)

    Attia Nicole

    2006-01-01

    Full Text Available (francuski Ce travail propose une réflexion sur l'origine du processus de segmentation du marché du travail par rapport à l'entreprise. Se situe-t-elle au sein même de l'entreprise ou en amont, c'est à dire entre les entreprises? Cela revient à se demander si on peut avoir une approche microéconomique ou macroéconomique de la segmentation et, à s'interroger sur le rôle réel tenu par les firmes dans le processus. Déterminant pour la théorie, ce rôle est à repenser selon la réponse apportée à notre question.

  17. Patriarchal Hauntings: Re-reading Villainy and Gender in Daphne du Maurier's Rebecca

    OpenAIRE

    2013-01-01

    Criticism of Daphne du Maurier’s popular classic Rebecca (1938) can be divided into two mainstream interpretations. On the one hand, it was traditionally marketed as a gothic romance where the hero and the heroine conquered the evil women that separated them. On the other, certain feminist critics have recently provided a very diff erent view of the story, aligning it with gothic narratives that deal with the dangers women suff er under the patriarchal control of their husbands...

  18. SOI metal-oxide-semiconductor field-effect transistor photon detector based on single-hole counting.

    Science.gov (United States)

    Du, Wei; Inokawa, Hiroshi; Satoh, Hiroaki; Ono, Atsushi

    2011-08-01

    In this Letter, a scaled-down silicon-on-insulator (SOI) metal-oxide-semiconductor field-effect transistor (MOSFET) is characterized as a photon detector, where photogenerated individual holes are trapped below the negatively biased gate and modulate stepwise the electron current flowing in the bottom channel induced by the positive substrate bias. The output waveforms exhibit clear separation of current levels corresponding to different numbers of trapped holes. Considering this capability of single-hole counting, a small dark count of less than 0.02 s(-1) at room temperature, and low operation voltage of 1 V, SOI MOSFET could be a unique photon-number-resolving detector if the small quantum efficiency were improved.

  19. Design of monolithically integrated GeSi electro-absorption modulators and photodetectors on a SOI platform

    Science.gov (United States)

    Liu, Jifeng; Pan, Dong; Jongthammanurak, Samerkhae; Wada, Kazumi; Kimerling, Lionel C.; Michel, Jurgen

    2007-01-01

    We present a design of monolithically integrated GeSi electroabsorption modulators and photodetectors for electronic-photonic integrated circuits on a silicon-on-insulator (SOI) platform. The GeSi electroabsorption modulator is based on the Franz-Keldysh effect, and the GeSi composition is chosen for optimal performance around 1550 nm. The designed modulator device is butt-coupled to Si(core)/SiO2(cladding) high index contrast waveguides, and has a predicted 3 dB bandwidth of >50 GHz and an extinction ratio of 10 dB. The same device structure can also be used for a waveguide-coupled photodetector with a predicted responsivity of > 1 A/W and a 3 dB bandwidth of > 35 GHz. Use of the same GeSi composition and device structure allows efficient monolithic process integration of the modulators and the photodetectors on an SOI platform.

  20. An analytical model for nanowire junctionless SOI FinFETs with considering three-dimensional coupling effect

    Science.gov (United States)

    Fan-Yu, Liu; Heng-Zhu, Liu; Bi-Wei, Liu; Yu-Feng, Guo

    2016-04-01

    In this paper, the three-dimensional (3D) coupling effect is discussed for nanowire junctionless silicon-on-insulator (SOI) FinFETs. With fin width decreasing from 100 nm to 7 nm, the electric field induced by the lateral gates increases and therefore the influence of back gate on the threshold voltage weakens. For a narrow and tall fin, the lateral gates mainly control the channel and therefore the effect of back gate decreases. A simple two-dimensional (2D) potential model is proposed for the subthreshold region of junctionless SOI FinFET. TCAD simulations validate our model. It can be used to extract the threshold voltage and doping concentration. In addition, the tuning of back gate on the threshold voltage can be predicted. Project supported by the Research Program of the National University of Defense Technology (Grant No. JC 13-06-04).

  1. All about alignment

    CERN Multimedia

    2006-01-01

    The ALICE absorbers, iron wall and superstructure have been installed with great precision. The ALICE front absorber, positioned in the centre of the detector, has been installed and aligned. Weighing more than 400 tonnes, the ALICE absorbers and the surrounding support structures have been installed and aligned with a precision of 1-2 mm, hardly an easy task but a very important one. The ALICE absorbers are made of three parts: the front absorber, a 35-tonne cone-shaped structure, and two small-angle absorbers, long straight cylinder sections weighing 18 and 40 tonnes. The three pieces lined up have a total length of about 17 m. In addition to these, ALICE technicians have installed a 300-tonne iron filter wall made of blocks that fit together like large Lego pieces and a surrounding metal support structure to hold the tracking and trigger chambers. The absorbers house the vacuum chamber and are also the reference surface for the positioning of the tracking and trigger chambers. For this reason, the ab...

  2. Testing the tidal alignment model of galaxy intrinsic alignment

    CERN Document Server

    Blazek, Jonathan; Seljak, Uros

    2011-01-01

    Weak gravitational lensing has become a powerful probe of large-scale structure and cosmological parameters. Precision weak lensing measurements require an understanding of the intrinsic alignment of galaxy ellipticities, which can in turn inform models of galaxy formation. It is hypothesized that elliptical galaxies align with the background tidal field and that this alignment mechanism dominates the correlation between ellipticities on cosmological scales (in the absence of lensing). We use recent large-scale structure measurements from the Sloan Digital Sky Survey to test this picture with several statistics: (1) the correlation between ellipticity and galaxy overdensity, w_{g+}; (2) the intrinsic alignment auto-correlation functions; (3) the correlation functions of curl-free, E, and divergence-free, B, modes (the latter of which is zero in the linear tidal alignment theory); (4) the alignment correlation function, w_g(r_p,theta), a recently developed statistic that generalizes the galaxy correlation func...

  3. Overcoming low-alignment signal contrast induced alignment failure by alignment signal enhancement

    Science.gov (United States)

    Lee, Byeong Soo; Kim, Young Ha; Hwang, Hyunwoo; Lee, Jeongjin; Kong, Jeong Heung; Kang, Young Seog; Paarhuis, Bart; Kok, Haico; de Graaf, Roelof; Weichselbaum, Stefan; Droste, Richard; Mason, Christopher; Aarts, Igor; de Boeij, Wim P.

    2016-03-01

    Overlay is one of the key factors which enables optical lithography extension to 1X node DRAM manufacturing. It is natural that accurate wafer alignment is a prerequisite for good device overlay. However, alignment failures or misalignments are commonly observed in a fab. There are many factors which could induce alignment problems. Low alignment signal contrast is one of the main issues. Alignment signal contrast can be degraded by opaque stack materials or by alignment mark degradation due to processes like CMP. This issue can be compounded by mark sub-segmentation from design rules in combination with double or quadruple spacer process. Alignment signal contrast can be improved by applying new material or process optimization, which sometimes lead to the addition of another process-step with higher costs. If we can amplify the signal components containing the position information and reduce other unwanted signal and background contributions then we can improve alignment performance without process change. In this paper we use ASML's new alignment sensor (as was introduced and released on the NXT:1980Di) and sample wafers with special stacks which can induce poor alignment signal to demonstrate alignment and overlay improvement.

  4. Cri-du-chat syndrome

    NARCIS (Netherlands)

    Didden, H.C.M.; Curfs, L.M.G

    2013-01-01

    Cri-du-chat syndrome is a genetic disease resulting from a deletion occurring on the short arm of chromosome 5 (5p-). The incidence ranges from 1:15 000 to 1:50 000 live-born infants. Its main clinical features are a high-pitched monochromatic cry, microcephaly, broad nasal bridge, epicanthal folds,

  5. Upper drift region double step partial SOI LDMOSFET: A novel device for enhancing breakdown voltage and output characteristics

    Science.gov (United States)

    Jamali Mahabadi, S. E.

    2016-01-01

    A new LDMOSFET structure called upper drift region double step partial silicon on insulator (UDDS-PSOI) is proposed to enhance the breakdown voltage (BV) and output characteristics. The proposed structure contains two vertical steps in the top surface of the drift region. It is demonstrated that in the proposed structure, the lateral electric field distribution is modified by producing two additional electric field peaks, which decrease the common peaks near the drain and gate junctions. The electric field distribution in the drift region is modulated and that of the buried layer is enhanced by the two steps in the top surface of the drift region, thereby resulting in the enhancement of the BV. The effect of device parameters, such as the step height and length in the top surface of the drift region, the doping concentration in the drift region, and the buried oxide length and thickness, on the electric field distribution and the BV of the proposed structure is studied. Simulation results from two-dimensional ATLAS simulator show that the BV of the UDDS-PSOI structure is 120% and 220% higher than that of conventional partial SOI (C-PSOI) and conventional SOI (C-SOI) structures, respectively. Furthermore, the drain current of the UDDS-PSOI is 11% larger than the C-PSOI structure with a drain-source voltage VDS = 100 V and gate-source voltage VGS = 5 V. Simulation results show that Ron in the proposed structure is 74% and 48% of that in C-PSOI and C-SOI structures, respectively.

  6. FORWARD GATED—DIODE METHOD FOR DIRECTLY MEASURING STRESS—INDUCED INTERFACE TRAPS IN NMOSFET/SOI

    Institute of Scientific and Technical Information of China (English)

    HuangAihua; YuShan; 等

    2002-01-01

    Forward gated-diode Recombination-Generation(R-G) current method is applied to an NMOSFET/SOI to measure the stress-induced interface traps in this letter.This easy but accurate experimental method can directly give stress-induced average interface traps for characterizing the device's hot carrier characteristics.For the tested device, an expected power law relationship of Δnit-t0.787 between pure stress-induced interface traps and accumulated stressing time is obtained.

  7. Implementation of a Readout Circuit on SOI Technology for the Signal Conditioning of a Neutron Detector in Harsh Environment

    Energy Technology Data Exchange (ETDEWEB)

    Ben Krit, S.; Coulie-Castellani, K.; Rahajandraibe, W. [Aix-Marseille, IM2NP UMR CNRS 7334, Marseille (France); Micolau, G. [Avignon University, IM2NP UMR CNRS 7334, Marseille (France); Lyoussi, A. [CEA Cadarache, CEA/DEN/DER/SPEx, Laboratoire Dosimetrie Capteurs Instrumentation, Cadarache (France)

    2015-07-01

    A transistor level implementation of the analog block of a readout system on SOI process is presented here. This system is dedicated to the signal conditioning of a neutron detector in harsh environment. The different parts of the readout circuits are defined. The harsh environment constraints (crossing particle effect, high temperatures) are also detailed and modeled in the circuit in order to test and evaluate the characteristics of the designed block when working under these conditions. (authors)

  8. Body-contact self-bias effect in partially depleted SOI-CMOS and alternatives to suppress floating body effect

    Institute of Scientific and Technical Information of China (English)

    Zhou Jianhua; Gao Minghui; S.K.Pang; Zou Shichang

    2011-01-01

    As SOI-CMOS technology nodes reach the tens of nanometer regime, body-contacts become more and more ineffective to suppress the floating body effect In this paper self-bias effect as the cause for this failure is analyzed and discussed in depth with respect to different structures and conditions Other alterative approaches to suppressing the floating body effect are also introduced and discussed.

  9. Pareto optimal pairwise sequence alignment.

    Science.gov (United States)

    DeRonne, Kevin W; Karypis, George

    2013-01-01

    Sequence alignment using evolutionary profiles is a commonly employed tool when investigating a protein. Many profile-profile scoring functions have been developed for use in such alignments, but there has not yet been a comprehensive study of Pareto optimal pairwise alignments for combining multiple such functions. We show that the problem of generating Pareto optimal pairwise alignments has an optimal substructure property, and develop an efficient algorithm for generating Pareto optimal frontiers of pairwise alignments. All possible sets of two, three, and four profile scoring functions are used from a pool of 11 functions and applied to 588 pairs of proteins in the ce_ref data set. The performance of the best objective combinations on ce_ref is also evaluated on an independent set of 913 protein pairs extracted from the BAliBASE RV11 data set. Our dynamic-programming-based heuristic approach produces approximated Pareto optimal frontiers of pairwise alignments that contain comparable alignments to those on the exact frontier, but on average in less than 1/58th the time in the case of four objectives. Our results show that the Pareto frontiers contain alignments whose quality is better than the alignments obtained by single objectives. However, the task of identifying a single high-quality alignment among those in the Pareto frontier remains challenging.

  10. A two-dimensional analytical-model-based comparative threshold performance analysis of SOI-SON MOSFETs

    Institute of Scientific and Technical Information of China (English)

    Sanjoy Deb; Saptarsi Ghosh; N Basanta Singh; A K De; Subir Kumar Sarkar

    2011-01-01

    A generalized threshold voltage model based on two-dimensional Poisson analysis has been developed for SOI/SON MOSFETs.Different short channel field effects,such as fringing fields,junction-induced lateral fields and substrate fields,are carefully investigated,and the related drain-induced barrier-lowering effects are incorporated in the analytical threshold voltage model.Through analytical model-based simulation,the threshold voltage roll-off and subthreshold slope for both structures are compared for different operational and structural parameter variations.Results of analytical simulation are compared with the results of the ATLAS 2D physicsbased simulator for verification of the analytical model.The performance of an SON MOSFET is found to be significantly different from a conventional SOI MOSFET.The short channel effects are found to be reduced in an SON,thereby resulting in a lower threshold voltage roll-offand a smaller subthreshold slope.This type of analysis is quite useful to figure out the performance improvement of SON over SOI structures for next generation short channel MOS devices.

  11. Single Event Transient Analysis of an SOI Operational Amplifier for Use in Low-Temperature Martian Exploration

    Science.gov (United States)

    Laird, Jamie S.; Scheik, Leif; Vizkelethy, Gyorgy; Mojarradi, Mohammad M; Chen, Yuan; Miyahira, Tetsuo; Blalock, Benjamin; Greenwell, Robert; Doyle, Barney

    2006-01-01

    The next generation of Martian rover#s to be launched by JPL are to examine polar regions where temperatures are extremely low and the absence of an earth-like atmosphere results in high levels of cosmic radiation at ground level. Cosmic rays lead to a plethora of radiation effects including Single Event Transients (SET) which can severely degrade microelectronic functionality. As such, a radiation-hardened, temperature compensated CMOS Single-On-Insulator (SOI) Operational Amplifier has been designed for JPL by the University of Tennessee and fabricated by Honeywell using the SOI V process. SOI technology has been shownto be far less sensitive to transient effects than both bulk and epilayer Si. Broad beam heavy-ion tests at the University of Texas A&M using Kr and Xebeams of energy 25MeV/amu were performed to ascertain the duration and severity of the SET for the op-amp configured for a low and high gain application. However, some ambiguity regarding the location of transient formation required the use of a focused MeV ion microbeam. A 36MeV O6(+) microbeam. the Sandia National Laboratory (SNL) was used to image and verify regions of particular concern. This is a viewgraph presentation

  12. On the improvement of DC analog characteristics of FD SOI transistors by using asymmetric self-cascode configuration

    Science.gov (United States)

    de Souza, Michelly; Flandre, Denis; Doria, Rodrigo Trevisoli; Trevisoli, Renan; Pavanello, Marcelo Antonio

    2016-03-01

    This paper demonstrates the improvement of DC analog performance of FD SOI transistors provided by the adoption of asymmetric self-cascode (A-SC) configuration. It consists of two transistors connected in series with gates shortened, acting as a single device. The doping concentration of the two transistors in the structure is different, leading to higher threshold voltage of the transistor at the source side of the composite structure than that of the transistor at the drain side. By reducing the doping concentration level at the channel of the transistor at drain side of the composite structure, forcing it to work in saturation, part of the applied drain bias is absorbed and does not reach the transistor close to the source, which is the main responsible for the overall device characteristics. As a result, larger drain current level and transconductance are obtained in comparison to symmetric self-cascode (where both transistors present same doping level) apart from promoting output conductance reduction. The transconductance, output conductance, Early voltage, and intrinsic voltage gain are used as figures of merit to demonstrate and validate the advantages of the proposed structure. The influence of channel length and doping concentration are also evaluated. The A-SC configuration is fully compatible with any standard FD SOI MOSFET technology with multiple threshold voltages. A simulation analysis demonstrates the feasibility of the proposed asymmetric structure in a UTBB FD SOI technology.

  13. Plasmonic nanogratings on MIM and SOI thin-film solar cells: comparison and optimization of optical and electric enhancements.

    Science.gov (United States)

    Heydari, Mehdi; Sabaeian, Mohammad

    2017-03-01

    In this work, Ag nanogratings comprised of arrays of nanostrips with three different cross sections of triangular, rectangular, and trapezoidal shape were considered and put at the top of the thin-film metal-insulator-metal (MIM) and semiconductor-on-insulator (SOI) solar cells. Then, the optical absorption and the short-circuit current density (JSC) enhancement (relative to a bare cell) were calculated and compared. In addition, the best strip cross section among three types of cross sections and the optimum grating period were found. The results showed that for the transverse electric (TE) mode, only the waveguide modes were excited inside the Si active layer with the assistance of Ag nanogratings. For the transverse magnetic (TM) mode, the waveguide as well as the localized surface plasmonic (LSP) modes were excited. The LSP modes, which were excited at the longer wavelengths centered on ∼600  nm, led to an additional and consequently a larger JSC enhancement. Finally, among the various types of plasmonic SOI and MIM solar cells, a SOI cell with a 300 nm grating period, comprised of rectangular nanostrips, showed a 40% enhancement in JSC, which is the highest possible value achieved in this work.

  14. Single Event Transient Analysis of an SOI Operational Amplifier for Use in Low-Temperature Martian Exploration

    Science.gov (United States)

    Laird, Jamie S.; Scheik, Leif; Vizkelethy, Gyorgy; Mojarradi, Mohammad M; Chen, Yuan; Miyahira, Tetsuo; Blalock, Benjamin; Greenwell, Robert; Doyle, Barney

    2006-01-01

    The next generation of Martian rover#s to be launched by JPL are to examine polar regions where temperatures are extremely low and the absence of an earth-like atmosphere results in high levels of cosmic radiation at ground level. Cosmic rays lead to a plethora of radiation effects including Single Event Transients (SET) which can severely degrade microelectronic functionality. As such, a radiation-hardened, temperature compensated CMOS Single-On-Insulator (SOI) Operational Amplifier has been designed for JPL by the University of Tennessee and fabricated by Honeywell using the SOI V process. SOI technology has been shownto be far less sensitive to transient effects than both bulk and epilayer Si. Broad beam heavy-ion tests at the University of Texas A&M using Kr and Xebeams of energy 25MeV/amu were performed to ascertain the duration and severity of the SET for the op-amp configured for a low and high gain application. However, some ambiguity regarding the location of transient formation required the use of a focused MeV ion microbeam. A 36MeV O6(+) microbeam. the Sandia National Laboratory (SNL) was used to image and verify regions of particular concern. This is a viewgraph presentation

  15. A technique for simultaneously improving the product of cutoff frequency-breakdown voltage and thermal stability of SOI SiGe HBT

    Science.gov (United States)

    Fu, Qiang; Zhang, Wan-Rong; Jin, Dong-Yue; Zhao, Yan-Xiao; Wang, Xiao

    2016-12-01

    The product of the cutoff frequency and breakdown voltage (fT×BVCEO) is an important figure of merit (FOM) to characterize overall performance of heterojunction bipolar transistor (HBT). In this paper, an approach to introducing a thin N+-buried layer into N collector region in silicon-on-insulator (SOI) SiGe HBT to simultaneously improve the FOM of fT×BVCEO and thermal stability is presented by using two-dimensional (2D) numerical simulation through SILVACO device simulator. Firstly, in order to show some disadvantages of the introduction of SOI structure, the effects of SOI insulation layer thickness (TBOX) on fT, BVCEO, and the FOM of fT×BVCEO are presented. The introduction of SOI structure remarkably reduces the electron concentration in collector region near SOI substrate insulation layer, obviously reduces fT, slightly increases BVCEO to some extent, but ultimately degrades the FOM of fT×BVCEO. Although the fT, BVCEO, and the FOM of fT×BVCEO can be improved by increasing SOI insulator SiO2 layer thickness TBOX in SOI structure, the device temperature and collector current are increased due to lower thermal conductivity of SiO2 layer, as a result, the self-heating effect of the device is enhanced, and the thermal stability of the device is degraded. Secondly, in order to alleviate the foregoing problem of low electron concentration in collector region near SOI insulation layer and the thermal stability resulting from thick TBOX, a thin N+-buried layer is introduced into collector region to not only improve the FOM of fT×BVCEO, but also weaken the self-heating effect of the device, thus improving the thermal stability of the device. Furthermore, the effect of the location of the thin N+-buried layer in collector region is investigated in detail. The result show that the FOM of fT×BVCEO is improved and the device temperature decreases as the N+-buried layer shifts toward SOI substrate insulation layer. The approach to introducing a thin N+-buried layer

  16. Onorbit IMU alignment error budget

    Science.gov (United States)

    Corson, R. W.

    1980-01-01

    The Star Tracker, Crew Optical Alignment Sight (COAS), and Inertial Measurement Unit (IMU) from a complex navigation system with a multitude of error sources were combined. A complete list of the system errors is presented. The errors were combined in a rational way to yield an estimate of the IMU alignment accuracy for STS-1. The expected standard deviation in the IMU alignment error for STS-1 type alignments was determined to be 72 arc seconds per axis for star tracker alignments and 188 arc seconds per axis for COAS alignments. These estimates are based on current knowledge of the star tracker, COAS, IMU, and navigation base error specifications, and were partially verified by preliminary Monte Carlo analysis.

  17. Catalyzing alignment processes

    DEFF Research Database (Denmark)

    Lauridsen, Erik Hagelskjær; Jørgensen, Ulrik

    2004-01-01

    in societal and industrial environmental awareness and improvements. The coordination of these elements – covered by the notion of coherence – is seen as the most important mechanism for bringing about a change in environmental impact. The elements comprise of regulatory regimes and available technology......, the networks of environmental professionals that work in the environmental organisation, in consulting and regulatory enforcement, and dominating business cultures. These have previously been identified in the literature as individually significant in relation to the evolving environmental agendas...... time and in combination with other social processes establish more aligned and standardized environmental performance between countries. However, examples of the introduction of environmental management suggests that EMS’ only plays a minor role in developing the actual environmental objectives...

  18. Caractérisation des sables et morphologie du fond du lac du ...

    African Journals Online (AJOL)

    Administrateur

    Map of this lake 26 years after its setting in water. Key words : Dam .... La méthode d'interpolation retenue est l'IDW (Inverse Distance Weighting) avec un pas .... Figure 2 : Répartition des faciès de surface des sédiments du lac de Taabo. 3.3.

  19. LES GITES PLOMBO-ZINCIFERES DU DISTRICT MINIER DU KOUDIAT SIDU AUSUD DU KEF EN TUNISIE

    Directory of Open Access Journals (Sweden)

    Ivan Jurković

    1992-12-01

    Full Text Available Les auteurs ont dćcrit l:i stratigiaphie. I.i tectonique, le corps de minerals, la paragenese et la genese dcs gttes Koudiat Sidri situ&s environ 20 km au sud de la ville du Kef en Tunisie.

  20. Lunar Alignments - Identification and Analysis

    Science.gov (United States)

    González-García, A. César

    Lunar alignments are difficult to establish given the apparent lack of written accounts clearly pointing toward lunar alignments for individual temples. While some individual cases are reviewed and highlighted, the weight of the proof must fall on statistical sampling. Some definitions for the lunar alignments are provided in order to clarify the targets, and thus, some new tools are provided to try to test the lunar hypothesis in several cases, especially in megalithic astronomy.

  1. GraphAlignment: Bayesian pairwise alignment of biological networks

    Directory of Open Access Journals (Sweden)

    Kolář Michal

    2012-11-01

    Full Text Available Abstract Background With increased experimental availability and accuracy of bio-molecular networks, tools for their comparative and evolutionary analysis are needed. A key component for such studies is the alignment of networks. Results We introduce the Bioconductor package GraphAlignment for pairwise alignment of bio-molecular networks. The alignment incorporates information both from network vertices and network edges and is based on an explicit evolutionary model, allowing inference of all scoring parameters directly from empirical data. We compare the performance of our algorithm to an alternative algorithm, Græmlin 2.0. On simulated data, GraphAlignment outperforms Græmlin 2.0 in several benchmarks except for computational complexity. When there is little or no noise in the data, GraphAlignment is slower than Græmlin 2.0. It is faster than Græmlin 2.0 when processing noisy data containing spurious vertex associations. Its typical case complexity grows approximately as O(N2.6. On empirical bacterial protein-protein interaction networks (PIN and gene co-expression networks, GraphAlignment outperforms Græmlin 2.0 with respect to coverage and specificity, albeit by a small margin. On large eukaryotic PIN, Græmlin 2.0 outperforms GraphAlignment. Conclusions The GraphAlignment algorithm is robust to spurious vertex associations, correctly resolves paralogs, and shows very good performance in identification of homologous vertices defined by high vertex and/or interaction similarity. The simplicity and generality of GraphAlignment edge scoring makes the algorithm an appropriate choice for global alignment of networks.

  2. Le parcours migratoire de jeunes ruraux du bled du kif

    Directory of Open Access Journals (Sweden)

    Khalid Mouna

    2015-06-01

    Full Text Available Cet article analyse le parcours migratoire des jeunes ruraux originaires des zones de production du cannabis, jeunes qui cherchent à briser les chaînes de soumission et d’humiliation vécues au quotidien. Pour les jeunes concernés par notre étude, la migration constitue un moyen de s’intégrer dans des réseaux transnationaux et ainsi d’entamer une carrière de beznass (commerçant du cannabis. Ce parcours « initiatique » permet à ces jeunes de revenir au bled avec de nouvelles idées, des moyens accrus, et de jouer un rôle actif dans l’économie locale – qui reste pour eux focalisée sur la production de cannabis, cette dernière restant néanmoins officiellement interdite.

  3. Paul Celan in Translation: "Du sei wie du"

    Directory of Open Access Journals (Sweden)

    John Felstiner

    1983-09-01

    Full Text Available Translating the lyric poetry of Paul Celan, especially his later poems, carries not only the endemic challenge and difficulty of any verse translation, but the added incentive of doing justice to a writer whose whole recourse after the Holocaust—whose sanctuary, if he was to have any at all—he sought in language itself, specifically in the Muttersprache , the mother tongue that was as well the tongue of those who murdered his mother and father. This essay exposes a process of translating "Du sei wie du" (1970, which perhaps more than any other poem by Celan, at once solicits and defies translation, moving as it does from modern to medieval German, and closing with Hebrew words from Isaiah— a messianic imperative that shows Celan verging as ever on his Jewish identity.

  4. Dynamique narrative du texte, du film et de la musique

    OpenAIRE

    Wildgen, Wolfgang

    2015-01-01

    La narrativité est foncièrement liée à la dynamique des événements et des actions représentés, et elle dépend du champ pragmatique narrateur/récepteur, c’est-à-dire du discours narratif. Cette dynamique demande une théorisation adéquate, par exemple au sein de la théorie des systèmes dynamiques ou de l’analyse vectorielle, et elle se manifeste dans des modalités différentes. Nous présentons des exemples d’analyse dans la modalité linguistique (récit oral spontané, conte populaire), dans la mo...

  5. A dicing-free SOI process for MEMS devices based on the lag effect

    Science.gov (United States)

    Xie, J.; Hao, Y.; Shen, Q.; Chang, H.; Yuan, W.

    2013-12-01

    This paper presents a dicing-free process for silicon-on-insulator (SOI) microelectromechanical systems (MEMS). In the process, the lag effect in deep reactive ion etching (DRIE) is used to form the breaking trenches. In the backside DRIE, the wide backside cavities are etched down to the buried oxide layer. The narrow breaking trenches, in contrast, are not etched to the buried oxide layer. Therefore, the narrow trench can be used to break the wafer after the entire process; in addition, the handle layer can still act as a bracing structure before ‘breaking’. Finally, the device layer is patterned, and a DRIE step is used to form the MEMS devices. In this way, the dicing step can be omitted to prevent further damages from high pressure water jets and silicon dust. Meanwhile, the process can also prevent notching simply because the insulating layer is removed before device etching. To demonstrate the feasibility of the proposed fabrication process, a micromachined gyroscope is designed and fabricated.

  6. SoiLique: A MATLAB® Based Program to analyze soil Liquefaction and some applications/comparisons

    Science.gov (United States)

    Bekin, Ekrem; Özçep, Ferhat

    2017-04-01

    Soil liquefaction is one of the ground failures induced by earthquakes. During dynamic loading, i.e. an earthquake, pore water pressure increases in undrained and cohesionless soils. Therefore, soils lose their solid behavior and act as if liquefied materials. In general, the earthquake hazard risk increases because of the liquefied behavior. In order to decrease liquefaction-induced failures and hazards, some empirical formulas have been used over decades. A unitless parameter, the safety factor, can be calculated by the help of these empirical formulas. The safety factor of liquefaction can be calculated from different in-situ tests (i.e. SPT or CPT) and the shear wave velocity of a corresponding research area. In addition to the safety factor, the consolidation depending on soil liquefaction can be calculated. The aim of this study is writing a MATLAB® gui to make soil liquefaction analysis (namely, calculations mentioned above). In other words, SoiLique calculates Cyclic Stress Ratio, Cyclic Resistance Ratio (from SPT, CPT, and shear wave velocity), the safety factor of liquefaction and consolidation depending on liquefaction. Some applications from liquefied sites in Turkey and some comparisons with other liquefaction software will be carried out.

  7. On substrate dopant engineering for ET-SOI MOSFETs with UT-BOX

    Institute of Scientific and Technical Information of China (English)

    Wu Hao; Xu Miao; Wan Guangxing; Zhu Huilong; Zhao Lichuan; Tong Xiaodong; Zhao Chao

    2014-01-01

    The importance ofsubstrate doping engineering for extremely thin SOI MOSFETs with ultra-thin buried oxide (ES-UB-MOSFETs) is demonstrated by simulation.A new substrate/backgate doping engineering,lateral non-uniform dopant distributions (LNDD) is investigated in ES-UB-MOSFETs.The effects of LNDD on device performance,Vt-roll-off,channel mobility and random dopant fluctuation (RDF) are studied and optimized.Fixing the long channel threshold voltage (Vt) at 0.3 V,ES-UB-MOSFETs with lateral uniform doping in the substrate and forward back bias can scale only to 35 nm,meanwhile LNDD enables ES-UB-MOSFETs to scale to a 20 nm gate length,which is 43% smaller.The LNDD degradation is 10% of the carrier mobility both for nMOS and pMOS,but it is canceled out by a good short channel effect controlled by the LNDD.Fixing Vt at 0.3 V,in long channel devices,due to more channel doping concentration for the LNDD technique,the RDF in LNDD controlled ES-UB-MOSFETs is worse than in back-bias controlled ES-UB-MOSFETs,but in the short channel,the RDF for LNDD controlled ES-UB-MOSFET is better due to its self-adaption of substrate doping engineering by using a fixed thickness inner-spacer.A novel process flow to form LNDD is proposed and simulated.

  8. Two-port multimode interference reflectors based on aluminium mirrors in a thick SOI platform

    CERN Document Server

    Fandiño, Javier S; Muñoz, Pascual

    2015-01-01

    Multimode interference reflectors (MIRs) were recently introduced as a new type of photonic integrated devices for on-chip, broadband light reflection. In the original proposal, different MIRs were demonstrated based on total internal reflection mirrors made of two deep-etched facets. Although simpler to fabricate, this approach imposes certain limits on the shape of the field pattern at the reflecting facets, which in turn restricts the types of MIRs that can be implemented. In this work, we propose and experimentally demonstrate the use of aluminium-based mirrors for the design of 2-port MIRs with variable reflectivity. These mirrors do not impose any restrictions on the incident field, and thus give more flexibility at the design stage. Different devices with reflectivities between~0~and~0.5 were fabricated in a 3~um thick SOI platform, and characterization of multiple dies was performed to extract statistical data about their performance. Our measurements show that, on average, losses both in the aluminiu...

  9. Magnetoresistance mobility characterization in advanced FD-SOI n-MOSFETs

    Science.gov (United States)

    Shin, Minju; Shi, Ming; Mouis, Mireille; Cros, Antoine; Josse, Emmanuel; Mukhopadhyay, Sutirha; Piot, Benjamin; Kim, Gyu-Tae; Ghibaudo, Gérard

    2015-01-01

    In this work, we applied the magnetoresistance (MR) characterization technique on n-type FD-SOI devices from a 14 nm-node technology. A notable advantage of MR is that it can probe the sub-threshold region, where Coulomb scattering influence is unscreened, while classical methods are validated to the strong inversion regime. At first, we discuss the influence of series resistance depending on gate bias, gate stack and temperature in this technology. Secondly, for long channel devices, we show that Coulomb scattering plays no significant role below threshold voltage at room temperature, in spite of the presence of a high-k/metal gate stack. MR-mobility (μMR) measurements were also performed in interface coupling conditions in order to further assess the role of the high-k/metal gate stack on transport properties and to analyze back bias induced mobility variations, depending on temperature range. Finally, the comparative study of low field effective mobility (μ0) and μMR shows that critical gate length of mobility degradation can be overestimated by using μ0 at low temperature due to a lack of ability of Y-function method to capture unscreened Coulomb scattering.

  10. Usage and Limitation of Standard Mobility Models for TCAD Simulation of Nanoscaled FD-SOI MOSFETs

    Directory of Open Access Journals (Sweden)

    A. Ciprut

    2015-01-01

    Full Text Available TCAD tools have been largely improved in the last decades in order to support both process and device complementary simulations which are usually based on continuously developed models following the technology progress. In this paper, we compare between experimental and TCAD simulated results of two kinds of nanoscale devices: ultrathin body (UTB and nanoscale Body (NSB SOI-MOSFET devices, sharing the same W/L ratio but having a channel thickness ratio of 10 : 1 (46 nm and 4.6 nm, resp.. The experimental transfer I-V characteristics were found to be surprisingly different by several orders of magnitude. We analyzed this result by considering the severe mobility degradation and the influence of a large gate voltage dependent series resistance (RSD. TCAD tools do not usually consider RSD to be either channel thickness or gate voltage dependent. After observing a clear discrepancy between the mobility values extracted from our measurements and those modeled by the available TCAD models, we propose a new semiempirical approach to model the transfer characteristics.

  11. Tunable filters based on an SOI nano-wire waveguide micro ring resonator

    Institute of Scientific and Technical Information of China (English)

    Li Shuai; Wu Yuanda; Yin Xiaojie; An Junming; Li Jianguang; Wang Hongjie; Hu Xiongwei

    2011-01-01

    Micro ring resonator (MRR) filters based on a silicon on insulator (SOI) nanowire waveguide are fabricated by electron beam photolithography (EBL) and inductive coupled plasma (ICP) etching technology.The cross-section size of the strip waveguides is 450 × 220 nm2,and the bending radius of the micro ring is around 5μm.The test results from the tunable filter based on a single ring show that the free spectral range (FSR) is 16.8 nm and the extinction ratio (ER) around the wavelength 1550 nm is 18.1 dB.After thermal tuning,the filter's tuning bandwidth reaches 4.8 nm with a tuning efficiency of 0.12 nm/℃ Meanwhile,we fabricated and studied multi-channel filters based on a single ring and a double ring.After measurement,we drew the following conclusions:during the signal transmission of multi-channel filters,crosstalk exists mainly among different transmission channels and are fairly distinct when there are signals input to add ports.

  12. Temperature analysis of Ge/Si heterojunction SOI-Tunnel FET

    Science.gov (United States)

    Chander, Sweta; Sinha, Sanjeet Kumar; Kumar, Sanjay; Singh, Prince Kumar; Baral, Kamalaksha; Singh, Kunal; Jit, Satyabrat

    2017-10-01

    Temperature is a thermal parameter which affects the device performance. This paper presents the impact of the temperature variation on the electrical characteristics such as tunneling width, subthreshold swing, threshold voltage, and ION /IOFF ratio of Ge/Si heterojunction Silicon on Insulator (SOI) Tunnel Field Effect Transistor (TFET) for different drain voltages. The device exhibits better performance in comparison with homojunction of the same device for different temperatures. This study reveals that OFF current of the device is independent of drain voltage variation irrespective of temperature variation. A small change in the subthreshold swing (SS) with temperature variation shows the weaker dependence of SS on temperature. The analog performance parameters such as transconductance, output transconductance, gate capacitance, and transconductance-to-drain-current ratio of the device are also examined. A small variation in analog parameters with temperature variation shows that the device could be used for the high-temperature analog circuit applications. A broad range of temperature from 200 K to 400 K has been used to analyze the performance of the device using Synopsys Technology Computer Aided Design (TCAD) simulation tool.

  13. Spacer engineered Trigate SOI TFET: An investigation towards harsh temperature environment applications

    Science.gov (United States)

    Mallikarjunarao; Ranjan, Rajeev; Pradhan, K. P.; Artola, L.; Sahu, P. K.

    2016-09-01

    In this paper, a novel N-channel Tunnel Field Effect Transistor (TFET) i.e., Trigate Silicon-ON-Insulator (SOI) N-TFET with high-k spacer is proposed for better Sub-threshold swing (SS) and OFF-state current (IOFF) by keeping in mind the sensitivity towards temperature. The proposed model can achieve a Sub-threshold swing less than 35 mV/decade at various temperatures, which is desirable for designing low power CTFET for digital circuit applications. In N-TFET source doping has a significant effect on the ON-state current (ION) level; therefore more electrons will tunnel from source to channel region. High-k Spacer i.e., HfO2 is used to enhance the device performance and also it avoids overlapping of transistors in an integrated circuits (IC's). We have designed a reliable device by performing the temperature analysis on Transfer characteristics, Drain characteristics and also on various performance metrics like ON-state current (ION), OFF-state current (IOFF), ION/IOFF, Trans-conductance (gm), Trans-conductance Generation Factor (TGF), Sub-threshold Swing (SS) to observe the applications towards harsh temperature environment.

  14. Synchrotron beam test of a photon counting pixel prototype based on Double-SOI technology

    Science.gov (United States)

    Zhou, Y.; Lu, Y.; Hashimoto, R.; Nishimura, R.; Kishimoto, S.; Arai, Y.; Ouyang, Q.

    2017-01-01

    The overall noise performances and first synchrotron beam measurement results of CPIXETEG3b, the first counting type Silicon-On-Insulator (SOI) pixel sensor prototype without crosstalk issue, are reported. The prototype includes a 64 × 64 pixel matrix with 50 μm pitch size. Each pixel consists of an N-in-P charge collection diode, a charge sensitive preamplifier, a shaper, a discriminator with thresholds adjustable by an in-pixel 4-bit DAC, and a 6-bit counter. The study was performed using the beam line 14A at KEK Photon Factory (KEK-PF) . The homogeneous response of the prototype, including charging-sharing effects between pixels were studied. 16 keV and 8 keV monochromatic small size (~ 10 μm diameter) X-ray beams were used for the charge sharing study, and a flat-field was added for homogenous response investigation. The overall detector homogeneity and the influence of basic detector parameters on charge sharing between pixels has been investigated.

  15. Single-event-transient effects in sub-70 nm bulk and SOI FinFETs

    Science.gov (United States)

    El Mamouni, Farah

    After fourteen years of research and investigations by engineers in the university and industry communities, FinFET devices are finally ready to use in products [1-2]. FinFET technologies have been demonstrated to outperform planar technologies for high speed, low power and high performance applications, while maintaining the shrinking trends of microelectronics (beyond 32 nm) for at least the next two to three technology generations. These promising findings were enough for leading chip manufacturers like Intel to announce their plans to mass-produce FinFETs in the near future [3-4]. However, the device response in extreme environments (i.e., space) is still not well understood. Exploring the behavior of FinFETs in such environments is also important for the aerospace and medical industries, where unhardened commercial off the shelf (COTS) electronics are used. The objective of this work is to explore the transient electrical behavior of FinFET devices in both bulk and SOI technologies in radiation-rich environments through laser and heavy ion testing. A further objective of this work is to contribute to improving the performance of FinFET devices, in particular in harsh environments. Indeed, the new results obtained in this work identify the physical regions in the devices that are most sensitive to radiation effects and how they affect the radiation response. The findings will help engineers to design new generations of FinFET devices with higher tolerance to radiation effects.

  16. Results and limits in the 1-D analytical modeling for the asymmetric DG SOI MOSFET

    Directory of Open Access Journals (Sweden)

    O. Cobianu

    2008-05-01

    Full Text Available This paper presents the results and the limits of 1-D analytical modeling of electrostatic potential in the low-doped p type silicon body of the asymmetric n-channel DG SOI MOSFET, where the contribution to the asymmetry comes only from p- and n-type doping of polysilicon used as the gate electrodes. Solving Poisson's equation with boundary conditions based on the continuity of normal electrical displacement at interfaces and the presence of a minimum electrostatic potential by using the Matlab code we have obtained a minimum potential with a slow variation in the central zone of silicon with the value pinned around 0.46 V, where the applied VGS voltage varies from 0.45 V to 0.95 V. The paper states clearly the validity domain of the analytical solution and the important effect of the localization of the minimum electrostatic potential value on the potential variation at interfaces as a function of the applied VGS voltage.

  17. Results and limits in the 1-D analytical modeling for the asymmetric DG SOI MOSFET

    Science.gov (United States)

    Cobianu, O.; Glesner, M.

    2008-05-01

    This paper presents the results and the limits of 1-D analytical modeling of electrostatic potential in the low-doped p type silicon body of the asymmetric n-channel DG SOI MOSFET, where the contribution to the asymmetry comes only from p- and n-type doping of polysilicon used as the gate electrodes. Solving Poisson's equation with boundary conditions based on the continuity of normal electrical displacement at interfaces and the presence of a minimum electrostatic potential by using the Matlab code we have obtained a minimum potential with a slow variation in the central zone of silicon with the value pinned around 0.46 V, where the applied VGS voltage varies from 0.45 V to 0.95 V. The paper states clearly the validity domain of the analytical solution and the important effect of the localization of the minimum electrostatic potential value on the potential variation at interfaces as a function of the applied VGS voltage.

  18. Pyro-Align: Sample-Align based Multiple Alignment system for Pyrosequencing Reads of Large Number

    CERN Document Server

    Saeed, Fahad

    2009-01-01

    Pyro-Align is a multiple alignment program specifically designed for pyrosequencing reads of huge number. Multiple sequence alignment is shown to be NP-hard and heuristics are designed for approximate solutions. Multiple sequence alignment of pyrosequenceing reads is complex mainly because of 2 factors. One being the huge number of reads, making the use of traditional heuristics,that scale very poorly for large number, unsuitable. The second reason is that the alignment cannot be performed arbitrarily, because the position of the reads with respect to the original genome is important and has to be taken into account.In this report we present a short description of the multiple alignment system for pyrosequencing reads.

  19. Mask alignment system for semiconductor processing

    Energy Technology Data Exchange (ETDEWEB)

    Webb, Aaron P.; Carlson, Charles T.; Weaver, William T.; Grant, Christopher N.

    2017-02-14

    A mask alignment system for providing precise and repeatable alignment between ion implantation masks and workpieces. The system includes a mask frame having a plurality of ion implantation masks loosely connected thereto. The mask frame is provided with a plurality of frame alignment cavities, and each mask is provided with a plurality of mask alignment cavities. The system further includes a platen for holding workpieces. The platen may be provided with a plurality of mask alignment pins and frame alignment pins configured to engage the mask alignment cavities and frame alignment cavities, respectively. The mask frame can be lowered onto the platen, with the frame alignment cavities moving into registration with the frame alignment pins to provide rough alignment between the masks and workpieces. The mask alignment cavities are then moved into registration with the mask alignment pins, thereby shifting each individual mask into precise alignment with a respective workpiece.

  20. L’Harmonie du monde

    Directory of Open Access Journals (Sweden)

    Martine Clouzot

    2003-11-01

    Full Text Available La Bourgogne est particulièrement bien présente et représentée dans l’exposition sur la musique et ses représentations au Moyen Âge organisée par Isabelle Marchesin (université de Poitiers, Christine Laloue (conservatrice du Patrimoine au Musée et Martine Clouzot (université de Bourgogne, au Musée de la Musique à Paris du 26 mars au 27 juin 2004. En Côte-d’Or, à Dijon, la Bibliothèque municipale a donné son accord officiel pour le prêt de la Bible d’Etienne Harding, les Moralia in Job et u...

  1. RNA Structural Alignments, Part I

    DEFF Research Database (Denmark)

    Havgaard, Jakob Hull; Gorodkin, Jan

    2014-01-01

    Simultaneous alignment and secondary structure prediction of RNA sequences is often referred to as "RNA structural alignment." A class of the methods for structural alignment is based on the principles proposed by Sankoff more than 25 years ago. The Sankoff algorithm simultaneously folds and alig...... the methods based on the Sankoff algorithm. All the practical implementations of the algorithm use heuristics to make them run in reasonable time and memory. These heuristics are also described in this chapter.......Simultaneous alignment and secondary structure prediction of RNA sequences is often referred to as "RNA structural alignment." A class of the methods for structural alignment is based on the principles proposed by Sankoff more than 25 years ago. The Sankoff algorithm simultaneously folds and aligns...... two or more sequences. The advantage of this algorithm over those that separate the folding and alignment steps is that it makes better predictions. The disadvantage is that it is slower and requires more computer memory to run. The amount of computational resources needed to run the Sankoff algorithm...

  2. Lexical alignment in triadic communication.

    Science.gov (United States)

    Foltz, Anouschka; Gaspers, Judith; Thiele, Kristina; Stenneken, Prisca; Cimiano, Philipp

    2015-01-01

    Lexical alignment refers to the adoption of one's interlocutor's lexical items. Accounts of the mechanisms underlying such lexical alignment differ (among other aspects) in the role assigned to addressee-centered behavior. In this study, we used a triadic communicative situation to test which factors may modulate the extent to which participants' lexical alignment reflects addressee-centered behavior. Pairs of naïve participants played a picture matching game and received information about the order in which pictures were to be matched from a voice over headphones. On critical trials, participants did or did not hear a name for the picture to be matched next over headphones. Importantly, when the voice over headphones provided a name, it did not match the name that the interlocutor had previously used to describe the object. Participants overwhelmingly used the word that the voice over headphones provided. This result points to non-addressee-centered behavior and is discussed in terms of disrupting alignment with the interlocutor as well as in terms of establishing alignment with the voice over headphones. In addition, the type of picture (line drawing vs. tangram shape) independently modulated lexical alignment, such that participants showed more lexical alignment to their interlocutor for (more ambiguous) tangram shapes compared to line drawings. Overall, the results point to a rather large role for non-addressee-centered behavior during lexical alignment.

  3. CATO: The Clone Alignment Tool.

    Directory of Open Access Journals (Sweden)

    Peter V Henstock

    Full Text Available High-throughput cloning efforts produce large numbers of sequences that need to be aligned, edited, compared with reference sequences, and organized as files and selected clones. Different pieces of software are typically required to perform each of these tasks. We have designed a single piece of software, CATO, the Clone Alignment Tool, that allows a user to align, evaluate, edit, and select clone sequences based on comparisons to reference sequences. The input and output are designed to be compatible with standard data formats, and thus suitable for integration into a clone processing pipeline. CATO provides both sequence alignment and visualizations to facilitate the analysis of cloning experiments. The alignment algorithm matches each of the relevant candidate sequences against each reference sequence. The visualization portion displays three levels of matching: 1 a top-level summary of the top candidate sequences aligned to each reference sequence, 2 a focused alignment view with the nucleotides of matched sequences displayed against one reference sequence, and 3 a pair-wise alignment of a single reference and candidate sequence pair. Users can select the minimum matching criteria for valid clones, edit or swap reference sequences, and export the results to a summary file as part of the high-throughput cloning workflow.

  4. CATO: The Clone Alignment Tool.

    Science.gov (United States)

    Henstock, Peter V; LaPan, Peter

    2016-01-01

    High-throughput cloning efforts produce large numbers of sequences that need to be aligned, edited, compared with reference sequences, and organized as files and selected clones. Different pieces of software are typically required to perform each of these tasks. We have designed a single piece of software, CATO, the Clone Alignment Tool, that allows a user to align, evaluate, edit, and select clone sequences based on comparisons to reference sequences. The input and output are designed to be compatible with standard data formats, and thus suitable for integration into a clone processing pipeline. CATO provides both sequence alignment and visualizations to facilitate the analysis of cloning experiments. The alignment algorithm matches each of the relevant candidate sequences against each reference sequence. The visualization portion displays three levels of matching: 1) a top-level summary of the top candidate sequences aligned to each reference sequence, 2) a focused alignment view with the nucleotides of matched sequences displayed against one reference sequence, and 3) a pair-wise alignment of a single reference and candidate sequence pair. Users can select the minimum matching criteria for valid clones, edit or swap reference sequences, and export the results to a summary file as part of the high-throughput cloning workflow.

  5. L'energie du moustique

    CERN Document Server

    Augereau, J F

    2002-01-01

    ENSEMBLE DE QUATRE ARTICLES - LARGE HADRON COLLIDER: Le dernier accelerateur de particules du CERN, le LEP, produisait des faisceaux d'electrons de 100 GeV chacun. Le LHC, qui accelere des faisceaux de protons, leur communiquera une energie de 7 TeV chacun. Une energie a la fois colossale et derisoire. Un TeV represente a peu pres l'energie cinetique d'un moustique (1/2 page).

  6. Revision du Genre Aseraggodes Kaup

    NARCIS (Netherlands)

    Chabanaud, P.

    1930-01-01

    Le présent travail comprend la définition du genre Aseraggodes Kaup et la revision, sous forme d'une clef dichotomique, de toutes les espèces qui le composent, revision établie d'après les types eux-mêmes de ces espèces. Ce genre Aseraggodes appartient à la famille des Soleidae et à la sousfamille

  7. Collecting uncollectables: Joachim Du Bellay

    Directory of Open Access Journals (Sweden)

    Gro Bjørnerud Mo

    2017-09-01

    Full Text Available Lists of wonders have circulated for millennia. Over and over, such inventories of spectacular man made constructions have been rewritten, re-edited and reimagi-ned. Both the wonders and the lists of wonders, preferably of the seven, have had a profound and long-lasting effect, and have been abundantly imitated, copied and reworked. Renaissance creative thinking was obsessed with the seven wonders of the ancient world, and early-modern Europe experienced a surge of visual and verbal depictions of wonders. This article is about a remarkable list of seven wonders, included in one of Joachim Du Bellay's canonical poems on Roman antiquities (Antiquités de Rome, published in Paris in 1558. Du Bellay shapes his list of wonders by exploring pat-terns of both repetition and mutability. Almost imperceptibly, he starts suggesting connections between 16th-century Rome and distant civilizations. Through the eyes of a fictive traveller and collector, the poet venerates the greatness and la-ments the loss of ancient buildings, sites and works of art, slowly developing a ver-bal, visual and open-ended gallery, creating a collection of crumbling or vanished, mainly Roman, architecture. This poetic display of ruins and dust in the Eternal City is nourished by the attraction of the inevitable destruction of past splendour and beauty. In the sonnets, Du Bellay imitates classical models and patterns. Whi-le compiling powerful images and stories of destruction, he combines techniques associated with both a modern concept of copy and more ancient theories of co-pia. In this context, this article also explores whether Pliny's Natural History might be a source for the imaginary collection of lost sites and wonders in Du Bellay's Antiquit's.

  8. De Profundis d’Oscar Wilde: la quête d’identité du dandy en prison

    Directory of Open Access Journals (Sweden)

    2010-02-01

    Full Text Available Plus d’un siècle après sa mort, Oscar Wilde continue de susciter l’intérêt tant pour son œuvre que pour sa vie. Dandy toute sa vie, d’une taille hors du commun, ce n’est pas seulement l’artiste mais aussi l’homme qui a marqué son siècle et continue d’enthousiasmer le lecteur du vingt-et-unième siècle. (... L’écriture de soi en souffrance, comme nous le voyons à travers De Profundis, aboutit à la preuve que son génie artistique est intact. (... L’écriture combat la souffrance de l’isolation et de la déchéance, mais dans le cas de Wilde, c’est également le moyen de se reconstruire en tant qu’homme et en tant qu’artiste: il n’a plus de nom, plus de reconnaissance par les hommes, mais le texte, que Wilde l’ai pensé ou non, est une nouvelle œuvre d’art qui montre la capacité et la force de l’esprit en condition d’oppression.

  9. Alignments in the nobelium isotopes

    Institute of Scientific and Technical Information of China (English)

    ZHENG Shi-Zie; XU Fu-Rong; YUAN Cen-Xi; QI Chong

    2009-01-01

    Total-Routhian-Surface calculations have been performed to investigate the deformation and align-ment properties of the No isotopes. It is found that normal deformed and superdeformed states in these nuclei can coexist at low excitation energies. In neutron-deficient No isotopes, the superdeformed shapes can even become the ground states. Moreover, we plotted the kinematic moments of inertia of the No isotopes, which follow very nicely available experimental data. It is noted that, as the rotational frequency increases, align-ments develop at hω=0.2-0.3 MeV. Our calculations show that the occupation of the vj orbital plays an important role in the alignments of the No isotopes.

  10. Alignment of flexible protein structures.

    Science.gov (United States)

    Shatsky, M; Fligelman, Z Y; Nussinov, R; Wolfson, H J

    2000-01-01

    We present two algorithms which align flexible protein structures. Both apply efficient structural pattern detection and graph theoretic techniques. The FlexProt algorithm simultaneously detects the hinge regions and aligns the rigid subparts of the molecules. It does it by efficiently detecting maximal congruent rigid fragments in both molecules and calculating their optimal arrangement which does not violate the protein sequence order. The FlexMol algorithm is sequence order independent, yet requires as input the hypothesized hinge positions. Due its sequence order independence it can also be applied to protein-protein interface matching and drug molecule alignment. It aligns the rigid parts of the molecule using the Geometric Hashing method and calculates optimal connectivity among these parts by graph-theoretic techniques. Both algorithms are highly efficient even compared with rigid structure alignment algorithms. Typical running times on a standard desktop PC (400 MHz) are about 7 seconds for FlexProt and about 1 minute for FlexMol.

  11. The CMS Silicon Tracker Alignment

    CERN Document Server

    Castello, R

    2008-01-01

    The alignment of the Strip and Pixel Tracker of the Compact Muon Solenoid experiment, with its large number of independent silicon sensors and its excellent spatial resolution, is a complex and challenging task. Besides high precision mounting, survey measurements and the Laser Alignment System, track-based alignment is needed to reach the envisaged precision.\\\\ Three different algorithms for track-based alignment were successfully tested on a sample of cosmic-ray data collected at the Tracker Integration Facility, where 15\\% of the Tracker was tested. These results, together with those coming from the CMS global run, will provide the basis for the full-scale alignment of the Tracker, which will be carried out with the first \\emph{p-p} collisions.

  12. Si proche, si loin ! Penser les processus urbains à partir des modèles de la géographie du tourisme ?

    Directory of Open Access Journals (Sweden)

    Matthey, Laurent

    2007-11-01

    Full Text Available Notre modernité géographique semble caractérisée par un processus sans précédent d’exotisation du proche. Un travail de généalogie de nos façons de vivre en ville permet de montrer en quoi cette exotisation participe d'un corpus de techniques d'usage des mondes urbains par lesquelles les habitants rapprochent des espaces-temps distincts dans un «transfert analogique» (Lahire, 1998, qui offre l'occasion d'un «déplacement» récréatif. L'accomplissement de ces voyages imaginaires requiert toutefois des lieux dotés d'une épaisseur sémiotique/symbolique singulière, situés le plus souvent dans les quartiers centraux des villes d'Occident. Il peut alors paraître judicieux d'interroger la pertinence des modèles issus de la géographie du tourisme pour penser certains aspects des processus urbains contemporains, notamment celui du retour en ville d’une nouvelle classe moyenne. Le recours à ces modèles semble en effet susceptible de compléter les deux grandes interprétations de la gentrification, soit celles de la rente urbaine et de la consommation ostentatoire. Dans leur quête du bien vivre en ville qui les attire vers les quartiers populaires, se pourrait-il que ces habitants quêtent les conditions d’une « recréation » immédiate de soi, qui leur permette de regagner, régénérés, la sphère du quotidien productif ?

  13. Individuation : repenser la biographie langagière pour accompagner l’articulation d’un soi francophone en contexte canadien de langue minoritaire

    Directory of Open Access Journals (Sweden)

    Gaëlle Planchenault

    2013-06-01

    Full Text Available Résumé Tandis que de récentes recommandations officielles encouragent l’application du Cadre européen commun de référence pour les langues (CECR au contexte éducatif canadien, il apparait nécessaire de s’interroger sur les mises à jour à accomplir sur les outils conçus par le Conseil de l’Europe—outils qui ont été élaborés sur une base théorique datant de plus d’une dizaine d’années et dans un environnement politique et linguistique précis. C’est dans cette optique que cet article se concentrera sur la biographie langagière du Portfolio des langues. Il tentera de démontrer qu’un support théorique adapté permettrait de réenvisager l’exercice pour maximiser ses avantages. En effet, depuis les études sur la narration en analyse de discours et en sociolinguistique, il est devenu évident que l’acte de se raconter ne peut pas être appréhendé comme un exercice factuel ou comme allant de soi. Il s’agit plutôt d’un exercice socioculturellement marqué qui se situe dans un contexte interactionnel et pédagogique précis où l’apprenant de français construit ce qu’il/elle définit comme étant son « histoire » et donc son identité francophone. Abstract Recent official recommendations to adopt the Common European Framework of Reference (CEFR in a Canadian context have brought forward the necessity to reflect on the updates and adaptations to be made to the documents produced by the Council of Europe—documents that are based on a theoretical framework dating back to the 1990s and conceived for a different political and linguistic setting. In this paper, I will examine the language biography, part of the Language Portfolio, in order to show that an appropriate theoretical framework would permit us to rethink the exercise and to maximize its benefits. In light of recent developments in the field of discourse analysis and narration studies, it has become evident that the act of narrating one

  14. Interference Alignment for Secrecy

    CERN Document Server

    Koyluoglu, Onur Ozan; Lai, Lifeng; Poor, H Vincent

    2008-01-01

    This paper studies the frequency/time selective $K$-user Gaussian interference channel with secrecy constraints. Two distinct models, namely the interference channel with confidential messages and the one with an external eavesdropper, are analyzed. The key difference between the two models is the lack of channel state information (CSI) about the external eavesdropper. Using interference alignment along with secrecy pre-coding, it is shown that each user can achieve non-zero secure Degrees of Freedom (DoF) for both cases. More precisely, the proposed coding scheme achieves $\\frac{K-2}{2K-2}$ secure DoF {\\em with probability one} per user in the confidential messages model. For the external eavesdropper scenario, on the other hand, it is shown that each user can achieve $\\frac{K-2}{2K}$ secure DoF {\\em in the ergodic setting}. Remarkably, these results establish the {\\em positive impact} of interference on the secrecy capacity region of wireless networks.

  15. Space Mirror Alignment System

    Science.gov (United States)

    Jau, Bruno M.; McKinney, Colin; Smythe, Robert F.; Palmer, Dean L.

    2011-01-01

    An optical alignment mirror mechanism (AMM) has been developed with angular positioning accuracy of +/-0.2 arcsec. This requires the mirror s linear positioning actuators to have positioning resolutions of +/-112 nm to enable the mirror to meet the angular tip/tilt accuracy requirement. Demonstrated capabilities are 0.1 arc-sec angular mirror positioning accuracy, which translates into linear positioning resolutions at the actuator of 50 nm. The mechanism consists of a structure with sets of cross-directional flexures that enable the mirror s tip and tilt motion, a mirror with its kinematic mount, and two linear actuators. An actuator comprises a brushless DC motor, a linear ball screw, and a piezoelectric brake that holds the mirror s position while the unit is unpowered. An interferometric linear position sensor senses the actuator s position. The AMMs were developed for an Astrometric Beam Combiner (ABC) optical bench, which is part of an interferometer development. Custom electronics were also developed to accommodate the presence of multiple AMMs within the ABC and provide a compact, all-in-one solution to power and control the AMMs.

  16. Downlink Interference Alignment

    CERN Document Server

    Suh, Changho; Tse, David

    2010-01-01

    We develop an interference alignment (IA) technique for a downlink cellular system. In the uplink, IA schemes need channel-state-information exchange across base-stations of different cells, but our downlink IA technique requires feedback only within a cell. As a result, the proposed scheme can be implemented with a few changes to an existing cellular system where the feedback mechanism (within a cell) is already being considered for supporting multi-user MIMO. Not only is our proposed scheme implementable with little effort, it can in fact provide substantial gain especially when interference from a dominant interferer (base-station) is significantly stronger than the remaining interference: it is shown that in the two-isolated cell layout, our scheme provides four-fold gain in throughput performance over a standard multi-user MIMO technique. We show through simulations that our technique provides respectable gain under more realistic scenarios: it gives approximately 55% and 20% gain for a linear cell layou...

  17. La question du « sujet » dans l’herméneutique gadamérienne.

    Directory of Open Access Journals (Sweden)

    Guy Deniau

    2005-03-01

    Full Text Available L’herméneutique philosophique de Gadamer se présente comme une tentative de libérer la question de la vérité de l’étroitesse dans laquelle le concept moderne de méthode l’aurait cantonnée. Pour ce faire, elle interroge des expériences (l’art, l’histoire, le langage dont l’ampleur ne se laisse pas réduire au primat de la conscience certaine de soi. C’est pourquoi la critique de la méthode moderne qu’opère l’herméneutique en interrogeant l’expérience de la compréhension est en même temps une critique du fondement de cette méthode, c’est-à-dire de la subjectivité, de la conscience certaine de soi. L’objet de cette étude est de mettre en évidence la cohérence et l’unité de ce qui vient dans l’herméneutique se substituer, sous diverses figures apparemment éparses, au « sujet » : la question du « sujet » y devient celle du « sujet » comme question.Gadamer’s philosophical hermeneutics presents itselfs as an attempt to liberate the question of the truth in which the modern concept of method should have it confined. So Gadamer analyses experiences (art, history, language whose extent can’t be reduced to the primacy of selfconsciousness. So the critic of modern method by hermeneutics is at the same time the critic of its foundation, that is to say of the subjectivity, of the certainty of selfsconsciousness. The intention of this study is to bring foreward the coherence and the unity of Gadamer’s diverses remarks about what comes after subjectivity : the question of « subject » becomes the one of the « subject » as a question.

  18. Prairie du Chien: A Historical Study,

    Science.gov (United States)

    1976-10-01

    Naudouwessee with whom this governor made peace and introduced trade and commerce among the whole nation. His son the successor told me that some of the...Nicholas Perrot, French Commandant of the West, with a party of couriers du bois and voyageurs descended the Wisconsin River and erected Fort St...number of traders and voyageurs settled at Prairie du Chien. Thomas Anderson who settled at Prairie du Chien in 1800 described the conditions on his

  19. Alignment-Annotator web server: rendering and annotating sequence alignments.

    Science.gov (United States)

    Gille, Christoph; Fähling, Michael; Weyand, Birgit; Wieland, Thomas; Gille, Andreas

    2014-07-01

    Alignment-Annotator is a novel web service designed to generate interactive views of annotated nucleotide and amino acid sequence alignments (i) de novo and (ii) embedded in other software. All computations are performed at server side. Interactivity is implemented in HTML5, a language native to web browsers. The alignment is initially displayed using default settings and can be modified with the graphical user interfaces. For example, individual sequences can be reordered or deleted using drag and drop, amino acid color code schemes can be applied and annotations can be added. Annotations can be made manually or imported (BioDAS servers, the UniProt, the Catalytic Site Atlas and the PDB). Some edits take immediate effect while others require server interaction and may take a few seconds to execute. The final alignment document can be downloaded as a zip-archive containing the HTML files. Because of the use of HTML the resulting interactive alignment can be viewed on any platform including Windows, Mac OS X, Linux, Android and iOS in any standard web browser. Importantly, no plugins nor Java are required and therefore Alignment-Anotator represents the first interactive browser-based alignment visualization. http://www.bioinformatics.org/strap/aa/ and http://strap.charite.de/aa/. © The Author(s) 2014. Published by Oxford University Press on behalf of Nucleic Acids Research.

  20. Magnetic alignment and the Poisson alignment reference system

    Science.gov (United States)

    Griffith, L. V.; Schenz, R. F.; Sommargren, G. E.

    1990-08-01

    Three distinct metrological operations are necessary to align a free-electron laser (FEL): the magnetic axis must be located, a straight line reference (SLR) must be generated, and the magnetic axis must be related to the SLR. This article begins with a review of the motivation for developing an alignment system that will assure better than 100-μm accuracy in the alignment of the magnetic axis throughout an FEL. The 100-μm accuracy is an error circle about an ideal axis for 300 m or more. The article describes techniques for identifying the magnetic axes of solenoids, quadrupoles, and wiggler poles. Propagation of a laser beam is described to the extent of revealing sources of nonlinearity in the beam. Development of a straight-line reference based on the Poisson line, a diffraction effect, is described in detail. Spheres in a large-diameter laser beam create Poisson lines and thus provide a necessary mechanism for gauging between the magnetic axis and the SLR. Procedures for installing FEL components and calibrating alignment fiducials to the magnetic axes of the components are also described. The Poisson alignment reference system should be accurate to 25 μm over 300 m, which is believed to be a factor-of-4 improvement over earlier techniques. An error budget shows that only 25% of the total budgeted tolerance is used for the alignment reference system, so the remaining tolerances should fall within the allowable range for FEL alignment.

  1. Genetics Home Reference: cri-du-chat syndrome

    Science.gov (United States)

    ... Health Conditions cri-du-chat syndrome cri-du-chat syndrome Enable Javascript to view the expand/collapse ... PDF Open All Close All Description Cri-du-chat (cat's cry) syndrome, also known as 5p- (5p ...

  2. Les apports de la clinique du travail à l'analyse de la "présentation de soi" chez le dirigeant d'entreprise

    OpenAIRE

    Wolf, Marie-Isabelle

    2010-01-01

    THE CONTRIBUTION OF THE CLINICAL APPROACH TO WORK AS APPLIED TO THE ANALYSIS OF THE CEO’S “SELF-PRESENTATION” The purpose of this research is to explore what it is that, in the cross between CEO subjectivity and his work, allows to better understand behaviors that are often considered irrational. Following a critical review of the literature of organizational behavior and psycho-sociology that deals with the CEO, as well as of the management literature relating to his activity, the field of w...

  3. Au fil du temps (1976 ou la loi du seuil

    Directory of Open Access Journals (Sweden)

    Isabelle Singer

    2010-04-01

    Full Text Available Ayant choisi de vivre dans un camion, les héros d’Au fil du temps (film de Wim Wenders de 1976 font du seuil une expérience particulière. Celle de la rupture avec toute idée de foyer et celle du refus d’appartenance à la terre natale, cette terre allemande traversée par une frontière le long de laquelle ils vont voyager, et qui les renvoie à chaque instant aux traumatismes de l’Histoire. Sur le pare-brise du camion, l’extérieur (campagnes indifférenciées, villes à l’abandon… et l’intérieur se superposent. Au fil du temps questionne le paysage : il s’agit d’en décoller un à un les mythes qui le recouvrent. L’image alors n’est plus surface mais volume à traverser, à lacérer et découvrir ce qui est tissé dans le paysage. La démarche de Wenders est alors proche de celle d’un de ses contemporains : Anselm Kiefer. Le paysage allemand provoque le rejet parce qu’il y a là toujours plus que le visible : des strates et des strates de culpabilité que le mythe - et c’est sa fonction - a recouvert. Et qu’il s’agira ici, de soulever. Le choix du nomadisme, c’est celui d’un état de l’humanité antérieur à l’idée de patrie. Et c’est aussi celui de la solitude, comme prix à payer à ce refus d’appartenance et à cette mise à jour des mythes. L’appartenance à la terre allemande et à son Histoire est profondément problématique parce que les pères sont fondamentalement coupables. On se reconnaîtra alors des pères de substitution : des pères de cinéma (Nicholas Ray ou Fritz Lang. Et l’on substituera l’Histoire du cinéma à l’Histoire. Bruno est réparateur ambulant de projecteurs et Au fil du temps dressera, au gré de ses pérégrinations, un état des lieux du cinéma allemand des années soixante-dix : déliquescent, colonisé par les images hollywoodiennes. Il faut que cela change : état du cinéma ; état des protagonistes solitaires en quête d’une identit

  4. The Research on Hump Phenomenon after Improving Electrical Safe Operating Area of SOI-LDMOS%SOI-LDMOS器件改善电安全工作区后驼峰现象的研究

    Institute of Scientific and Technical Information of China (English)

    霍昌隆; 刘斯扬; 钱钦松; 孙伟锋

    2012-01-01

    研究了高压SOI-LDMOS器件在引入P-sink结构改善电安全工作区(E-SOA)后Ⅰ-Ⅴ特性曲线呈现的驼峰现象(hump).首先将驼峰现象出现后器件的源端总电流分成电子电流与空穴电流单独分析,确定高栅压下电子电流阶梯上升是驼峰现象产生的表面原因,进而通过仿真分析出Kirk效应导致的空穴电流在表面漂移区中电导调制是驼峰现象产生的根本原因.最后,根据对驼峰现象的分析,设计出新器件结构成功消除了驼峰现象,为今后不同类型LDMOS器件改善Ⅰ-Ⅴ曲线驼峰现象提供了理论指导.%The hump phenomenon of I-V characteristic after introducing P-sink structure to improve electrical safe operating area (E-SOA) on the high voltage SOI-LDMOS has been investigated in this paper. Firstly, the electron current and hole current are extracted and analyzed from total current at source side separately to make sure that the electron current step increase is the appearance reason for hump phenomenon, and then hole conductivity modulation in surface N-drift region induced by Kirk effect at drain side is confirmed as the deep reason. Moreover, according to the analysis in this paper, a new SOI-LDMOS structure has been designed to eliminating hump phenomenon, which gives the theoretic instructions for eliminating hump phenomenon of high voltage LDMOS more accurately.

  5. Study of the Radiation-hard 0.8 µm SOI CMOS Process Radiation Inlfuence%0.8µm SOI CMOS抗辐射加固工艺辐射效应研究

    Institute of Scientific and Technical Information of China (English)

    马慧红; 顾爱军

    2015-01-01

    The paper focused on the radiation-hard 0.8 µm SOI CMOS process, the devices and circuits were fabricated. The devices and circuits’ behavior in Co60 γ ray irradiation circumstances was studied. It shows that the devices with and without the radiation-hard technology had different performance. The hardened devices’ threshold voltage of the front gate shifts less than 0.15 V. The hardened circuits’ standby current, dynamic current and function were also tested. The results showed that the circuits with the radiation-hard process can meet the speciifcation of 100 µA over the total dose range of 500 krad(Si).%采用抗辐射0.8µm SOI CMOS加固技术,研制了抗辐射SOI CMOS器件和电路。利用Co60γ射线源对器件和电路的总剂量辐射效应进行了研究。对比抗辐射加固工艺前后器件的Id-Vg曲线以及前栅、背栅阈值随辐射总剂量的变化关系,得到1 Mrad(Si)总剂量辐射下器件前栅阈值电压漂移小于0.15 V。最后对加固和非加固的电路静态电流、动态电流、功能随辐射总剂量的变化情况进行了研究,结果表明抗辐射加固工艺制造的电路抗总剂量辐射性能达到500 krad(Si)。

  6. Orbit Alignment in Triple Stars

    Science.gov (United States)

    Tokovinin, Andrei

    2017-08-01

    The statistics of the angle Φ between orbital angular momenta in hierarchical triple systems with known inner visual or astrometric orbits are studied. A correlation between apparent revolution directions proves the partial orbit alignment known from earlier works. The alignment is strong in triples with outer projected separation less than ∼50 au, where the average Φ is about 20^\\circ . In contrast, outer orbits wider than 1000 au are not aligned with the inner orbits. It is established that the orbit alignment decreases with the increasing mass of the primary component. The average eccentricity of inner orbits in well-aligned triples is smaller than in randomly aligned ones. These findings highlight the role of dissipative interactions with gas in defining the orbital architecture of low-mass triple systems. On the other hand, chaotic dynamics apparently played a role in shaping more massive hierarchies. The analysis of projected configurations and triples with known inner and outer orbits indicates that the distribution of Φ is likely bimodal, where 80% of triples have {{Φ }}< 70^\\circ and the remaining ones are randomly aligned.

  7. An IO block array in a radiation-hardened SOI SRAM-based FPGA

    Institute of Scientific and Technical Information of China (English)

    Zhao Yan; Gao Jiantou; Wang Jian; Li Ming; Liu Guizhai; Zhang Feng; Guo Xufeng; Zhao Kai; Stanley L.Chen; Yu Fang; Liu Zhongli; Wu Lihua; Han Xiaowei; Li Yan; Zhang Qianli; Chen Liang; Zhang Guoquan; Li Jianzhong; Yang Bo

    2012-01-01

    We present an input/output block (IOB) array used in the radiation-hardened SRAM-based fieldprogrammable gate array (FPGA) VS1000,which is designed and fabricated with a 0.5 μm partially depleted silicon-on-insulator (SOI) logic process at the CETC 58th Institute.Corresponding with the characteristics of the FPGA,each IOB includes a local routing pool and two IO cells composed of a signal path circuit,configurable input/output buffers and an ESD protection network.A boundary-scan path circuit can be used between the programmable buffers and the input/output circuit or as a transparent circuit when the IOB is applied in different modes.Programmable IO buffers can be used at TTL/CMOS standard levels.The local routing pool enhances the flexibility and routability of the connection between the IOB array and the core logic.Radiation-hardened designs,including A-type and H-type body-tied transistors and special D-type registers,improve the anti-radiation performance.The ESD protection network,which provides a high-impulse discharge path on a pad,prevents the breakdown of the core logic caused by the immense current.These design strategies facilitate the design of FPGAs with different capacities or architectures to form a series of FPGAs.The functionality and performance of the IOB array is proved after a functional test.The radiation test indicates that the proposed VS1000 chip with an IOB array has a total dose tolerance of 100 krad(Si),a dose survivability rate of 1.5 × 1011 rad(Si)/s,and a neutron fluence immunity of 1 × 1014 n/cm2.

  8. An IO block array in a radiation-hardened SOI SRAM-based FPGA

    Science.gov (United States)

    Yan, Zhao; Lihua, Wu; Xiaowei, Han; Yan, Li; Qianli, Zhang; Liang, Chen; Guoquan, Zhang; Jianzhong, Li; Bo, Yang; Jiantou, Gao; Jian, Wang; Ming, Li; Guizhai, Liu; Feng, Zhang; Xufeng, Guo; Kai, Zhao; Chen, Stanley L.; Fang, Yu; Zhongli, Liu

    2012-01-01

    We present an input/output block (IOB) array used in the radiation-hardened SRAM-based field-programmable gate array (FPGA) VS1000, which is designed and fabricated with a 0.5 μm partially depleted silicon-on-insulator (SOI) logic process at the CETC 58th Institute. Corresponding with the characteristics of the FPGA, each IOB includes a local routing pool and two IO cells composed of a signal path circuit, configurable input/output buffers and an ESD protection network. A boundary-scan path circuit can be used between the programmable buffers and the input/output circuit or as a transparent circuit when the IOB is applied in different modes. Programmable IO buffers can be used at TTL/CMOS standard levels. The local routing pool enhances the flexibility and routability of the connection between the IOB array and the core logic. Radiation-hardened designs, including A-type and H-type body-tied transistors and special D-type registers, improve the anti-radiation performance. The ESD protection network, which provides a high-impulse discharge path on a pad, prevents the breakdown of the core logic caused by the immense current. These design strategies facilitate the design of FPGAs with different capacities or architectures to form a series of FPGAs. The functionality and performance of the IOB array is proved after a functional test. The radiation test indicates that the proposed VS1000 chip with an IOB array has a total dose tolerance of 100 krad(Si), a dose survivability rate of 1.5 × 1011 rad(Si)/s, and a neutron fluence immunity of 1 × 1014 n/cm2.

  9. InP on SOI devices for optical communication and optical network on chip

    Science.gov (United States)

    Fedeli, J.-M.; Ben Bakir, B.; Olivier, N.; Grosse, Ph.; Grenouillet, L.; Augendre, E.; Phillippe, P.; Gilbert, K.; Bordel, D.; Harduin, J.

    2011-01-01

    For about ten years, we have been developing InP on Si devices under different projects focusing first on μlasers then on semicompact lasers. For aiming the integration on a CMOS circuit and for thermal issue, we relied on SiO2 direct bonding of InP unpatterned materials. After the chemical removal of the InP substrate, the heterostructures lie on top of silicon waveguides of an SOI wafer with a separation of about 100nm. Different lasers or photodetectors have been achieved for off-chip optical communication and for intra-chip optical communication within an optical network. For high performance computing with high speed communication between cores, we developed InP microdisk lasers that are coupled to silicon waveguide and produced 100μW of optical power and that can be directly modulated up to 5G at different wavelengths. The optical network is based on wavelength selective circuits with ring resonators. InGaAs photodetectors are evanescently coupled to the silicon waveguide with an efficiency of 0.8A/W. The fabrication has been demonstrated at 200mm wafer scale in a microelectronics clean room for CMOS compatibility. For off-chip communication, silicon on InP evanescent laser have been realized with an innovative design where the cavity is defined in silicon and the gain localized in the QW of bonded InP hererostructure. The investigated devices operate at continuous wave regime with room temperature threshold current below 100 mA, the side mode suppression ratio is as high as 20dB, and the fibercoupled output power is {7mW. Direct modulation can be achieved with already 6G operation.

  10. Aligning for Innovation - Alignment Strategy to Drive Innovation

    Science.gov (United States)

    Johnson, Hurel; Teltschik, David; Bussey, Horace, Jr.; Moy, James

    2010-01-01

    With the sudden need for innovation that will help the country achieve its long-term space exploration objectives, the question of whether NASA is aligned effectively to drive the innovation that it so desperately needs to take space exploration to the next level should be entertained. Authors such as Robert Kaplan and David North have noted that companies that use a formal system for implementing strategy consistently outperform their peers. They have outlined a six-stage management systems model for implementing strategy, which includes the aligning of the organization towards its objectives. This involves the alignment of the organization from the top down. This presentation will explore the impacts of existing U.S. industrial policy on technological innovation; assess the current NASA organizational alignment and its impacts on driving technological innovation; and finally suggest an alternative approach that may drive the innovation needed to take the world to the next level of space exploration, with NASA truly leading the way.

  11. Aligning for Innovation - Alignment Strategy to Drive Innovation

    Science.gov (United States)

    Johnson, Hurel; Teltschik, David; Bussey, Horace, Jr.; Moy, James

    2010-01-01

    With the sudden need for innovation that will help the country achieve its long-term space exploration objectives, the question of whether NASA is aligned effectively to drive the innovation that it so desperately needs to take space exploration to the next level should be entertained. Authors such as Robert Kaplan and David North have noted that companies that use a formal system for implementing strategy consistently outperform their peers. They have outlined a six-stage management systems model for implementing strategy, which includes the aligning of the organization towards its objectives. This involves the alignment of the organization from the top down. This presentation will explore the impacts of existing U.S. industrial policy on technological innovation; assess the current NASA organizational alignment and its impacts on driving technological innovation; and finally suggest an alternative approach that may drive the innovation needed to take the world to the next level of space exploration, with NASA truly leading the way.

  12. Annealing of (DU-10Mo)-Zr Co-Rolled Foils

    Energy Technology Data Exchange (ETDEWEB)

    Pacheco, Robin Montoya [Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Alexander, David John [Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Mccabe, Rodney James [Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Clarke, Kester Diederik [Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Scott, Jeffrey E. [Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Montalvo, Joel Dwayne [Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Papin, Pallas [Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Ansell, George S. [Colorado School of Mines, Golden, CO (United States)

    2017-01-20

    Producing uranium-10wt% molybdenum (DU-10Mo) foils to clad with Al first requires initial bonding of the DU-10Mo foil to zirconium (Zr) by hot rolling, followed by cold rolling to final thickness. Rolling often produces wavy (DU-10Mo)-Zr foils that should be flattened before further processing, as any distortions could affect the final alignment and bonding of the Al cladding to the Zr co-rolled surface layer; this bonding is achieved by a hot isostatic pressing (HIP) process. Distortions in the (DU-10Mo)-Zr foil may cause the fuel foil to press against the Al cladding and thus create thinner or thicker areas in the Al cladding layer during the HIP cycle. Post machining is difficult and risky at this stage in the process since there is a chance of hitting the DU-10Mo. Therefore, it is very important to establish a process to flatten and remove any waviness. This study was conducted to determine if a simple annealing treatment could flatten wavy foils. Using the same starting material (i.e. DU-10Mo coupons of the same thickness), five different levels of hot rolling and cold rolling, combined with five different annealing treatments, were performed to determine the effect of these processing variables on flatness, bonding of layers, annealing response, microstructure, and hardness. The same final thickness was reached in all cases. Micrographs, textures, and hardness measurements were obtained for the various processing combinations. Based on these results, it was concluded that annealing at 650°C or higher is an effective treatment to appreciably reduce foil waviness.

  13. A novel partial SOI LDMOSFET with periodic buried oxide for breakdown voltage and self heating effect enhancement

    Science.gov (United States)

    Jamali Mahabadi, S. E.; Rajabi, Saba; Loiacono, Julian

    2015-09-01

    In this paper a partial silicon on insulator (PSOI) lateral double diffused metal oxide semiconductor field effect transistor (LDMOSFET) with periodic buried oxide layer (PBO) for enhancing breakdown voltage (BV) and self-heating effects (SHEs) is proposed for the first time. This new structure is called periodic buried oxide partial silicon on insulator (PBO-PSOI). In this structure, periodic small pieces of SiO2 were used as the buried oxide (BOX) layer in PSOI to modulate the electric field in the structure. It was demonstrated that the electric field is distributed more evenly by producing additional electric field peaks, which decrease the common peaks near the drain and gate junctions in the PBO-PSOI structure. Hence, the area underneath the electric field curve increases which leads to higher breakdown voltage. Also a p-type Si window was introduced in the source side to force the substrate to share the vertical voltage drop, leading to a higher vertical BV. Furthermore, the Si window under the source and those between periodic pieces of SiO2 create parallel conduction paths between the active layer and substrate thereby alleviating the SHEs. Simulations with the two dimensional ATLAS device simulator from the Silvaco suite of simulation tools show that the BV of PBO-PSOI is 100% higher than that of the conventional partial SOI (C-PSOI) structure. Furthermore the PBO-PSOI structure alleviates SHEs to a greater extent than its C-PSOI counterpart. The achieved drain current for the PBO-PSOI structure (100 μA), at drain-source voltage of VDS = 100 V and gate-source voltage of VGS = 25 V, is shown to be significantly larger than that in C-PSOI and fully depleted SOI (FD-SOI) structures (87 μA and 51 μA respectively). Drain current can be further improved at the expense of BV by increasing the doping of the drift region.

  14. Magnetic axis alignment and the Poisson alignment reference system

    Science.gov (United States)

    Griffith, Lee V.; Schenz, Richard F.; Sommargren, Gary E.

    1989-01-01

    Three distinct metrological operations are necessary to align a free-electron laser (FEL): the magnetic axis must be located, a straight line reference (SLR) must be generated, and the magnetic axis must be related to the SLR. This paper begins with a review of the motivation for developing an alignment system that will assure better than 100 micrometer accuracy in the alignment of the magnetic axis throughout an FEL. The paper describes techniques for identifying the magnetic axis of solenoids, quadrupoles, and wiggler poles. Propagation of a laser beam is described to the extent of revealing sources of nonlinearity in the beam. Development and use of the Poisson line, a diffraction effect, is described in detail. Spheres in a large-diameter laser beam create Poisson lines and thus provide a necessary mechanism for gauging between the magnetic axis and the SLR. Procedures for installing FEL components and calibrating alignment fiducials to the magnetic axes of the components are also described. An error budget shows that the Poisson alignment reference system will make it possible to meet the alignment tolerances for an FEL.

  15. Analyse critique et dimensionnelle du concept de santéisation

    Directory of Open Access Journals (Sweden)

    Hélène Poliquin

    2015-01-01

    Full Text Available Devant les avancées biomédicales ainsi que l’accroissement des coûts en santé, les individus sont incités à redouter et prévenir les maladies en modifiant leurs comportements. De plus, la santé élevée au rang des vertus ou « la santéisation » s’inscrit au cœur des valeurs modernes néolibérales que sont l’autonomie, la responsabilisation et la performance. Dorénavant, la santé et les comportements de santé constituent des moyens privilégiés d’aspirer au bonheur, au bien-être et à l’accomplissement de soi d’autant plus que l’individu jouit d’un statut socioéconomique élevé. Néanmoins, la santéisation peut aussi contribuer à la stigmatisation et l’exclusion sociale en plus de renforcer le sentiment chez certains d’avoir échoué à être des citoyens responsables. Ce texte présente une analyse critique et dimensionnelle du concept de santéisation qui s’appuie, sur cadre théorique composé entre autres, de travaux de Foucault sur le gouvernement des vivants et de Taylor sur l’individu moderne.

  16. Mechanisms of Low-Energy Operation of XCT-SOI CMOS Devices—Prospect of Sub-20-nm Regime

    Directory of Open Access Journals (Sweden)

    Yasuhisa Omura

    2014-01-01

    Full Text Available This paper describes the performance prospect of scaled cross-current tetrode (XCT CMOS devices and demonstrates the outstanding low-energy aspects of sub-30-nm-long gate XCT-SOI CMOS by analyzing device operations. The energy efficiency improvement of such scaled XCT CMOS circuits (two orders higher stems from the “source potential floating effect”, which offers the dynamic reduction of effective gate capacitance. It is expected that this feature will be very important in many medical implant applications that demand a long device lifetime without recharging the battery.

  17. SEMICONDUCTOR DEVICES: Analysis of the thermo-optic effect in lateral-carrier-injection SOI ridge waveguide devices

    Science.gov (United States)

    Jiate, Zhao; Yong, Zhao; Wanjun, Wang; Yinlei, Hao; Qiang, Zhou; Jianyi, Yang; Minghua, Wang; Xiaoqing, Jiang

    2010-06-01

    The thermo-optic effect in the lateral-carrier-injection pin junction SOI ridge waveguide is analyzed according to the thermal field equation. Numerical analysis and experimental results show that the thermo-optic effect caused by carrier injection is significant in such devices, especially for small structure ones. For a device with a 1000 μm modulation length, the refractive index rise introduced by heat accounts for 1/8 of the total effect under normal working conditions. A proposal of adjusting the electrode position to cool the devices to diminish the thermal-optic effect is put forward.

  18. A linear 180 nm SOI CMOS antenna switch module using integrated passive device filters for cellular applications

    Science.gov (United States)

    Jie, Cui; Lei, Chen; Peng, Zhao; Xu, Niu; Yi, Liu

    2014-06-01

    A broadband monolithic linear single pole, eight throw (SP8T) switch has been fabricated in 180 nm thin film silicon-on-insulator (SOI) CMOS technology with a quad-band GSM harmonic filter in integrated passive devices (IPD) technology, which is developed for cellular applications. The antenna switch module (ASM) features 1.2 dB insertion loss with filter on 2G bands and 0.4 dB insertion loss in 3G bands, less than -45 dB isolation and maximum -103 dB intermodulation distortion for mobile front ends by applying distributed architecture and adaptive supply voltage generator.

  19. Investigation of the stability of polysilicon layers in SOI-structures under irradiation by electrons and hard magnetic field influence

    Directory of Open Access Journals (Sweden)

    Khoverko Yu. N.

    2010-10-01

    Full Text Available The properties of recrystallized polysilicon on insulator layers of p-type conductive SOI-structures with different carrier concentration irradiated with high-energy electrons flow about 1017 сm–2 in temperature range 4,2—300 К and high magnetic fields were investigated. It was found that heavily doped laser recrystallized polysilicon on insulator layers show its radiation resistance under irradiation with high-energy electrons and magnetoresistance of such material remains quite low in magnetic field about 14 T does not exceed 1—2%. Such qulity can be applied in designing of microelectronic sensors of mechanical values operable in hard conditions of exploitation.

  20. A SOI-Based Low Noise and Wide Dynamic Range Event-Driven Detector for X-Ray Imaging

    CERN Document Server

    Shrestha, Sumeet; Kawahito, Shoji; Yasutomi, Keita; Kagawa, Keiichiro; Takeda, Ayaki; Tsuru, Takeshi Go; Arai, Yasuo

    2015-01-01

    A low noise and wide dynamic range event driven detector for the detection of X-Ray energy is realized using 0.2 [um] Silicon on insulator (SOI) technology. Pixel circuits are divided into two parts; signal sensing circuit and event detection circuit. Event detection circuit is activated when X-Ray energy falls into the detector. In-pixel gain selection is implemented for the detection of a small signal and wide band of energy particle. Adaptive gain and capability of correlated double sampling (CDS) technique for the kTC noise canceling of charge detector realizes the low noise and high dynamic range event driven detector.

  1. Métastases gastro-intestinales du cancer du sein: à propos de 2 cas

    Science.gov (United States)

    Loubna, Mezouar; Mohamed, El Hfid; Tijani, El Harroudi; Fouzia, Ghadouani; Hanane, Haj Kacem; Zouhour, Bourhaleb; Asmae, Ouabdelmoumen

    2013-01-01

    Le cancer du sein est le cancer le plus fréquent chez la femme, notamment au Maroc, avec un taux de mortalité élevé. Les métastases gastro-intestinales d'un carcinome canalaire du sein sont rares. Leur diagnostic est difficile du fait de la nature non spécifique des symptômes. Nous rapportons deux observations originales de métastases gastroduodénales d'un cancer canalaire infiltrant du sein. Les métastases gastro-intestinales du cancer du sein sont très rares; la présence de symptômes gastro-intestinaux chez une malade ayant un antécédent de cancer du sein doit faire suspecter une atteinte métastatique gastro-intestinale. PMID:24198876

  2. Session du Conseil du CERN : le ministre britannique, Robert Jackson, souligne l'intérêt de on pays pour l'avenir du CERN : décisions du Conseil pour la mise en oeuvre des recommandations du Comité d'évaluation du CERN: départ anticipé pour 200 membres au moins du personnel - mise à jour de la méthode de calcule pour les contributions des Etats Membres au budget

    CERN Multimedia

    CERN Press Office. Geneva

    1988-01-01

    Session du Conseil du CERN : le ministre britannique, Robert Jackson, souligne l'intérêt de on pays pour l'avenir du CERN : décisions du Conseil pour la mise en oeuvre des recommandations du Comité d'évaluation du CERN: départ anticipé pour 200 membres au moins du personnel - mise à jour de la méthode de calcule pour les contributions des Etats Membres au budget

  3. RF Jitter Modulation Alignment Sensing

    Science.gov (United States)

    Ortega, L. F.; Fulda, P.; Diaz-Ortiz, M.; Perez Sanchez, G.; Ciani, G.; Voss, D.; Mueller, G.; Tanner, D. B.

    2017-01-01

    We will present the numerical and experimental results of a new alignment sensing scheme which can reduce the complexity of alignment sensing systems currently used, while maintaining the same shot noise limited sensitivity. This scheme relies on the ability of electro-optic beam deflectors to create angular modulation sidebands in radio frequency, and needs only a single-element photodiode and IQ demodulation to generate error signals for tilt and translation degrees of freedom in one dimension. It distances itself from current techniques by eliminating the need for beam centering servo systems, quadrant photodetectors and Gouy phase telescopes. RF Jitter alignment sensing can be used to reduce the complexity in the alignment systems of many laser optical experiments, including LIGO and the ALPS experiment.

  4. Des Taiwanais dans Ie sud du Fujian

    Institute of Scientific and Technical Information of China (English)

    2002-01-01

    Se trouvant dans le sud-est de la Chine au bord dela mer, la province du Fujian s’appelle aussi toutsimplement "Min". Les anc(?)tres d’une grande partie de lapopulation de Taiwan sont venus du Fujian (Min). Les deux

  5. SIMS Analysis on Ion Implantation of Fluorine at Interface between Top Silicon and Insulator Layers in SOI Materials%SOI材料中绝缘层界面处离子注入氟的SIMS剖析

    Institute of Scientific and Technical Information of China (English)

    方培源; 曹永明

    2005-01-01

    Silicon-on-insulator (SOI) is well known as "new technology of Si semiconductor IC process in 21 Contrary". Recently, SOI materials have been identified as the first choice of the semiconductor materials for fabricating low voltage and low power circuits. In order to improve the working performance of the SOI circuit under the radiating circumstance, ion implantation of fluorine impurity into the insulator layers in SOI materials is used for hardening the thermal gate oxide layer. Proper implantation depth of fluorine would further improve radiate resistance performance of the SOI circuit. This paper describes the SIMS analysis results of fluorine impurity implantation profile at the interface between top silicon layer and oxide insulator layer.

  6. Le vide univers du tout et du rien

    CERN Document Server

    Diner, Simon

    1997-01-01

    Pourquoi l'Univers plutôt que le vide ? Le temps et l'espace existent-ils en l'absence de l'Univers ? Que reste-t-il quand tout est enlevé ? Pourquoi quelque chose plutôt que rien ? Depuis des siècles, ces interrogations mobilisent philosophes et physiciens. Mais aujourd'hui, le vide n'est pas le rien. Il serait même l'acteur central de l'histoire de la matière et de l'Univers, le partenaire privilégié de la physique. Vide et matière ne sont plus deux manifestations séparées de la nature, mais deux aspects d'une même réalité. Le vide est l'état de base dont la matière émerge, sans couper son cordon ombilical Le vide comme Univers du rien cède la place au vide comme Univers du tout. Que le vide puisse être conçu par les physiciens comme réservoir potentiel d'univers, voici qui ne devrait laisser personne indifférent. Ce livre ouvre un débat et nous convie à une réflexion surprenante.

  7. Image du savoir, image du pouvoir dans le Lapidaire

    Directory of Open Access Journals (Sweden)

    Marta LACOMBA

    2007-01-01

    Full Text Available À travers le prologue et les enluminures de présentation, le Lapidaire d’Alphonse X oriente l’interprétation de l’œuvre. Ces paratextes mettent en avant le rôle capital du savoir, représenté par la métaphore du trésor caché, qui a ici une valeur topique. Ils mettent également en exergue le rôle que s’attribue le roi dans la transmission de ce savoir, et placent cette nouvelle attribution royale au cœur de son projet politique.A través del prólogo y las miniaturas de presentación, el Lapidario de Alfonso X orienta la interpretación de la obra. Estos paratextos subrayan el papel capital del saber, representado por la metáfora del tesoro escondido, que tiene aquí un valor tópico. Ponen asimismo de manifiesto el papel que se atribuye el monarca en la transmisión de ese saber y colocan esta nueva atribución real en el centro de su proyecto político.

  8. Les esclaves du commandant Quiquandon

    OpenAIRE

    Tymowski, Michal

    2003-01-01

    Le 10 janvier 1895, Albert Grodet, gouverneur général du Soudan français, adressa au ministère des Colonies une dépêche accusant le commandant Quiquandon, dirigeant de la région Nord-Est (Ségou), d'exploiter illégalement un domaine sur lequel travaillent 140 esclaves. À partir de ce cas particulier, l'auteur analyse les conflits qui existaient à l'époque entre l'administration civile et un groupe d'officiers soudanais. Il se demande si la possession d'esclaves par des officiers, prenant...

  9. Du comptoir à la toge

    OpenAIRE

    Buti, Gilbert

    2007-01-01

    Descendant d’une famille de petits notables du Dauphiné, Antoine Anthoine (1749-1826) qui n’a pas pu accéder à la magistrature se destine à la marchandise. Après un apprentissage à Marseille au comptoir des Seimandy, il est nommé, par ces négociants, régisseur pour leur commandite de Constantinople. La mobilisation de sa proche parenté et les soutiens des pouvoirs politiques locaux, nationaux et internationaux lui permettent d’obtenir une mission destinée à ouvrir le commerce de la Russie mér...

  10. Aventures radiophoniques du Nouveau Roman

    Directory of Open Access Journals (Sweden)

    Beatrice Nickel

    2015-12-01

    Full Text Available  Aventures radiophoniques du Nouveau Roman Colloque international organisé par l’Université Paul-Valéry Montpellier, en partenariat avec l’Université de Stuttgart 19-20 novembre 2015   Organisateurs :  Pierre-Marie Héron, Annie Pibarot, Université Paul-Valéry Montpellier, centre de recherche Rirra21. Françoise Joly, Beatrice Nickel, Universität Stuttgart 

  11. 具有倾斜表面漂移区的SOI LDMOS的工艺设计%Process Design of SOI LDMOS with Gradient Surface in Drift Region

    Institute of Scientific and Technical Information of China (English)

    薛龙来; 郭宇锋; 周井泉; 孙玲

    2010-01-01

    对一种具有倾斜表面漂移区SOI LDMOS 的制造方法进行了研究,提出采用多窗口LOCOS法形成倾斜表面漂移区的新技术;建立了倾斜表面轮廓函数的数学模型,并开发了用于优化窗口尺寸和位置的计算机程序.TCAD 2-D工艺仿真验证了该技术的可行性.设计了漂移区长度约为15 μm的SOI LDMOS.数值仿真结果表明,与RESURF结构器件相比较,其漂移区电场近似为理想的常数分布,并且击穿电压提高约8%,漂移区浓度提高约127%.由此可见,VLT是一种理想的横向耐压技术.

  12. Calibration of shaft alignment instruments

    Science.gov (United States)

    Hemming, Bjorn

    1998-09-01

    Correct shaft alignment is vital for most rotating machines. Several shaft alignment instruments, ranging form dial indicator based to laser based, are commercially available. At VTT Manufacturing Technology a device for calibration of shaft alignment instruments was developed during 1997. A feature of the developed device is the similarity to the typical use of shaft alignment instruments i.e. the rotation of two shafts during the calibration. The benefit of the rotation is that all errors of the shaft alignment instrument, for example the deformations of the suspension bars, are included. However, the rotation increases significantly the uncertainty of calibration because of errors in the suspension of the shafts in the developed device for calibration of shaft alignment instruments. Without rotation the uncertainty of calibration is 0.001 mm for the parallel offset scale and 0,003 mm/m for the angular scale. With rotation the uncertainty of calibration is 0.002 mm for the scale and 0.004 mm/m for the angular scale.

  13. Analysis of the thin-film SOI lateral bipolar transistor and optimization of its output characteristics for high-temperature applications

    Science.gov (United States)

    Adriaensen, S.; Flandre, D.

    2002-09-01

    In this paper, we investigate and optimize the static characteristics of NPN lateral bipolar transistors implemented in a thin-film fully-depleted SOI CMOS process for high-temperature analog applications. The basic lateral SOI bipolar device, which shows good behaviour in high-temperature circuits in spite of its relatively poor performances, is firstly described regarding its process and layout parameters. Then the concept of the graded-base bipolar transistor is introduced. This device presents significantly improved output characteristics while preserving standard current gain and CMOS process compatibility. Measurements and simulations are used to demonstrate the improvements of the breakdown voltage and the Early voltage of the bipolar device.

  14. On-chip grating coupler array on the SOI platform for fan-in/fan-out of MCFs with low insertion loss and crosstalk

    DEFF Research Database (Denmark)

    Ding, Yunhong; Ye, Feihong; Peucheret, Christophe

    2015-01-01

    We report the design and fabrication of a compact multi-core fiber fan-in/fan-out using a grating coupler array on the SOI platform. The grating couplers are fully-etched, enabling the whole circuit to be fabricated in a single lithography and etching step. Thanks to the apodized design for the g......We report the design and fabrication of a compact multi-core fiber fan-in/fan-out using a grating coupler array on the SOI platform. The grating couplers are fully-etched, enabling the whole circuit to be fabricated in a single lithography and etching step. Thanks to the apodized design...

  15. Hybrid III-V/SOI single-mode vertical-cavity laser with in-plane emission into a silicon waveguide

    DEFF Research Database (Denmark)

    Park, Gyeong Cheol; Xue, Weiqi; Semenova, Elizaveta;

    2015-01-01

    We report a III-V-on-SOI vertical-cavity laser emitting into an in-plane Si waveguide fabricated by using CMOS-compatible processes. The fabricated laser operates at 1.54 µm with a SMSR of 33 dB and a low threshold.......We report a III-V-on-SOI vertical-cavity laser emitting into an in-plane Si waveguide fabricated by using CMOS-compatible processes. The fabricated laser operates at 1.54 µm with a SMSR of 33 dB and a low threshold....

  16. Sociologie et sociolinguistique du franbreu

    Directory of Open Access Journals (Sweden)

    Ben-Rafael Eliezer

    2014-07-01

    Full Text Available Des enquêtes ont montré que plus de 20 % des adultes israéliens ont quelque connaissance du français. Parmi cette population, 250 000 à 300 000 personnes pouvaient être considérées comme francophones. Le français a affirmé une présence importante – pas toujours reconnue – dès la phase cruciale du développement de cette société. Une immigration de masse suivit la création de l’État (1948 dont la population a quasiment triplé en moins de deux décennies, avec l’arrivée de plus de 200 000 immigrants d’Afrique du Nord et des dizaines de milliers des Balkans et du Moyen-Orient. Beaucoup parmi ces immigrants étaient francophones – le français étant pour eux soit la première langue soit une deuxième qu’ils contrôlaient. C’est depuis lors que la présence du français est devenue démographiquement significative dans la société israélienne, se prolongeant de nos jours dans l’immigration en provenance de France qui se poursuit jusqu’à aujourd’hui. Comme nous l’avons montré ailleurs (Ben-Rafael et Ben-Rafael 2013, Israël fait l’expérience simultanée de plusieurs francophonies originales qui diffèrent par leurs sources aussi bien que leurs expressions (Ben-Rafael et Ben-Rafael 2013. Un premier modèle est le « français vernaculaire » (voir Boudras-Chapon 2008 amené par les immigrants de classes défavorisées arrivant d’Afrique du nord qui se sont regroupés en Israël. Leur français n’a offert qu’une faible résistance à l’hébreu qui s’est imposée dans le processus d’intégration. Un bilinguisme fonctionnant sur un mode additif au début qui s’est mué progressivement en modèle soustractif. Un second modèle concerne les immigrants de même origine ainsi que des immigrants francophones d’autres pays (pays balkaniques, Turquie ou Egypte formant une strate instruite de classe moyenne, pour qui le français était d’utilisation quotidienne aussi bien que de langue de

  17. Rejets et environnement du CERN

    CERN Document Server

    Vojtyla, P

    2007-01-01

    La radioactivité de l’environnement autour de l’Organisation Européenne pour la Recherche Nucléaire (CERN) et les doses de rayonnements qui en résultent pour la population avoisinante sont contrôlées par la Commission de Sécurité du CERN et de manière indépendante par les autorités compétentes des deux États Hôtes, l’Institut de Radioprotection et de Sûreté Nucléaire (IRSN) côté France et l’Office Fédéral de la Santé Publique (OFSP) côté Suisse (voire Chapitre 8.6). Dans ce rapport, les résultats de mesures concernent en particulier le territoire suisse. L’ensemble des mesures effectuées en 2006 prouve que le fonctionnement des installations du CERN était sans conséquence radiologique sur l’environnement et la population. Le contrôle des émissions montre que les rejets effectifs se situent, également en 2006, nettement en dessous des limites réglementaires. Ce constat est confirmé par le contrôle des immissions dans l’environnement. Le CERN a bien respecté en 2...

  18. Optimal Design of an Ultrasmall SOI-Based 1 × 8 Flat-Top AWG by Using an MMI

    Directory of Open Access Journals (Sweden)

    Hongqiang Li

    2013-01-01

    Full Text Available Four methods based on a multimode interference (MMI structure are optimally designed to flatten the spectral response of silicon-on-insulator- (SOI- based arrayed-waveguide grating (AWG applied in a demodulation integration microsystem. In the design for each method, SOI is selected as the material, the beam propagation method is used, and the performances (including the 3 dB passband width, the crosstalk, and the insertion loss of the flat-top AWG are studied. Moreover, the output spectrum responses of AWGs with or without a flattened structure are compared. The results show that low insertion loss, crosstalk, and a flat and efficient spectral response are simultaneously achieved for each kind of structure. By comparing the four designs, the design that combines a tapered MMI with tapered input/output waveguides, which has not been previously reported, was shown to yield better results than others. The optimized design reduced crosstalk to approximately −21.9 dB and had an insertion loss of −4.36 dB and a 3 dB passband width, that is, approximately 65% of the channel spacing.

  19. Low voltage logic circuits exploiting gate level dynamic body biasing in 28 nm UTBB FD-SOI

    Science.gov (United States)

    Taco, Ramiro; Levi, Itamar; Lanuzza, Marco; Fish, Alexander

    2016-03-01

    In this paper, the recently proposed gate level body bias (GLBB) technique is evaluated for low voltage logic design in state-of-the-art 28 nm ultra-thin body and box (UTBB) fully-depleted silicon-on-insulator (FD-SOI) technology. The inherent benefits of the low-granularity body-bias control, provided by the GLBB approach, are emphasized by the efficiency of forward body bias (FBB) in the FD-SOI technology. In addition, the possibility to integrate PMOS and NMOS devices into a single common well configuration allows significant area reduction, as compared to an equivalent triple well implementation. Some arithmetic circuits were designed using GLBB approach and compared to their conventional CMOS and DTMOS counterparts under different running conditions at low voltage regime. Simulation results shows that, for 300 mV of supply voltage, a 4 × 4-bit GLBB Baugh Wooley multiplier allows performance improvement of about 30% and area reduction of about 35%, while maintaining low energy consumption as compared to the conventional CMOS ⧹ DTMOS solutions. Performance and energy benefits are maintained over a wide range of process-voltage-temperature (PVT) variations.

  20. The nature and impact of chronic stressors on refugee children in Ban Mai Nai Soi camp, Thailand.

    Science.gov (United States)

    Meyer, Sarah; Murray, Laura K; Puffer, Eve S; Larsen, Jillian; Bolton, Paul

    2013-01-01

    Refugee camps are replete with risk factors for mental health problems among children, including poverty, disruption of family structure, family violence and food insecurity. This study, focused on refugee children from Burma, in Ban Mai Nai Soi camp in Thailand, sought to identify the particular risks children are exposed to in this context, and the impacts on their mental health and psychosocial well-being. This study employed two qualitative methods--free list interviews and key informant interviews--to identify the main problems impacting children in Ban Mai Nai Soi camp and to explore the causes of these problems and their impact on children's well-being. Respondents in free list interviews identified a number of problems that impact children in this context, including fighting between adults, alcohol use by adults and children, and child abuse and neglect. Across the issues, the causes included economic and social conditions associated with living in the camp and changes in family structures. Children are chronically exposed to stressors during their growth and development in the camp environment. Policies and interventions in areas of protracted displacement in camp-based settings should work to address these stressors and their impacts at community, household and individual levels.

  1. Influence of back-gate stress on the back-gate threshold voltage of a LOCOS-isolated SOI MOSFET

    Institute of Scientific and Technical Information of China (English)

    梅博; 毕津顺; 李多力; 刘思南; 韩郑生

    2012-01-01

    The performance of a LOCOS-isolated SOI MOSFET heavily depends on its back-gate characteristic, which can be affected by back-gate stress,A large voltage stress was applied to the back gate of SOI devices for at least 30 s at room temperature,which could effectively modify the back-gate threshold voltage of these devices.This modification is stable and time invariant.In order to improve the back-gate threshold voltage,positive substrate bias was applied to NMOS devices and negative substrate bias was applied to PMOS devices,These results suggest that there is a leakage path between source and drain along the silicon island edge,and the application of large backgate bias with the source,drain and gate grounded can strongly affect this leakage path.So we draw the conclusion that the back-gate threshold voltage,which is directly related to the leakage current,can be influenced by back-gate stress.

  2. One-dimensional breakdown voltage model of SOI RESURF lateral power device based on lateral linearly graded approximation

    Institute of Scientific and Technical Information of China (English)

    张珺; 郭宇锋; 徐跃; 林宏; 杨慧; 洪洋; 姚佳飞

    2015-01-01

    A novel one-dimensional (1D) analytical model is proposed for quantifying the breakdown voltage of reduced surface field (RESURF) lateral power device fabricated on silicon on an insulator (SOI) substrate. We assume that the charges in the depletion region contribute to the lateral PN junctions along the diagonal of the area shared by the lateral and vertical depletion regions. Based on the assumption, the lateral PN junction behaves as a linearly graded junction, thus resulting in a reduced surface electric field and high breakdown voltage. Using the proposed model, the breakdown voltage as a function of device parameters is investigated and compared with the numerical simulation by the TCAD tools. The analytical results are shown to be in fair agreement with the numerical results. Finally, a new RESURF criterion is derived which offers a useful scheme to optimize the structure parameters. This simple 1D model provides a clear physical insight into the RESURF effect and a new explanation on the improvement in breakdown voltage in an SOI RESURF device.

  3. A method for wafer level hermetic packaging of SOI-MEMS devices with embedded vertical feedthroughs using advanced MEMS process

    Science.gov (United States)

    Mert Torunbalci, Mustafa; Emre Alper, Said; Akin, Tayfun

    2015-12-01

    This paper presents a novel, inherently simple, and low-cost fabrication and hermetic packaging method developed for SOI-MEMS devices, where a single SOI wafer is used for the fabrication of MEMS structures as well as vertical feedthroughs, while a single glass cap wafer is used for hermetic encapsulation and routing metallization. Hermetic encapsulation can be achieved either with the silicon-glass anodic or Au-Si eutectic bonding techniques. The dies sealed with anodic and Au-Si eutectic bonding provide a low vertical feedthrough resistance around 50 Ω. Glass-to-silicon anodically and Au-Si eutectic bonded seals yield a very stable cavity pressure below 10 mTorr with thin-film getters, which are measured to be stable even after 311 d. The package pressure can be adjusted from 5 mTorr to 20 Torr by using different outgassing, cavity depth, and gettering options. The packaging yield is observed to be around 64% and 84% for the anodic and Au-Si eutectic packages, respectively. The average shear strength of the anodic and eutectic packages is measured to be higher than 17 MPa and 42 MPa, respectively. Temperature cycling, high temperature storage, and ultra-high temperature shock tests result in no degradation in the hermeticity of the packaged chips, proving perfect thermal reliability.

  4. Sensing Characteristics of A Precision Aligner Using Moire Gratings for Precision Alignment System

    Institute of Scientific and Technical Information of China (English)

    ZHOU Lizhong; Hideo Furuhashi; Yoshiyuki Uchida

    2001-01-01

    Sensing characteristics of a precision aligner using moire gratings for precision alignment sysem has been investigated. A differential moire alignment system and a modified alignment system were used. The influence of the setting accuracy of the gap length and inclination of gratings on the alignment accuracy has been studied experimentally and theoretically. Setting accuracy of the gap length less than 2.5μm is required in modified moire alignment. There is no influence of the gap length on the alignment accuracy in the differential alignment system. The inclination affects alignment accuracies in both differential and modified moire alignment systems.

  5. A High-Voltage SOI CMOS Exciter Chip for a Programmable Fluidic Processor System.

    Science.gov (United States)

    Current, K W; Yuk, K; McConaghy, C; Gascoyne, P R C; Schwartz, J A; Vykoukal, J V; Andrews, C

    2007-06-01

    waveform frequency is about 200 Hz; and standard 5-V CMOS logic data communication rate is variable up to 250 kHz. This HV demonstration chip is fabricated in a 130-V 1.0-mum SOI CMOS fabrication technology, dissipates a maximum of 1.87 W, and is about 10.4 mm x 8.2 mm.

  6. Evaluation of the implementation of the Montreal At Home/Chez Soi project.

    Science.gov (United States)

    Fleury, Marie-Josée; Grenier, Guy; Vallée, Catherine

    2014-11-28

    Homelessness and mental disorders constitute a major problem in Canada. The purpose of the At Home/Chez Soi pilot project was to house and provide supports to marginalised groups. Policymakers are in a better position to nurture new, complex interventions if they know which key factors hinder or enable their implementation. This paper evaluates the implementation process for the Montreal site of this project. We collected data from 62 individuals, through individual interviews, focus groups, questionnaires, observations and documentation. The implementation process was analysed using a conceptual framework with five constructs: Intervention Characteristics (IC), Context of Implementation (CI), Implementation Process (IP), Organizational Characteristics (OC) and Strategies of Implementation (SI). The most serious obstacle to the project came from the CI construct, i.e., lack of support from provincial authorities and key local resources in the homelessness field. The second was within the OC construct. The chief hindrances were numerous structures, divergent values among stakeholders, frequent turnover of personnel and team leaders; lacking staff supervision and miscommunication. The third is related to IC: the complex, unyielding nature of the project undermined its chances of success. The greatest challenges from IP were the pressure to perform, along with stress caused by planning, deadlines and tension between teams. Conversely, SI construct conditions (e.g., effective governing structures, comprehensive training initiatives and toolkits) were generally very positive even with problems in power sharing and local leadership. For the four other constructs, the following proved useful: evidence of the project's scope and quality, great needs of services consolidation, generous financing and status as a research pilot project, enthusiasm and commitment toward the project, substantially improved services, and overall user satisfaction. This study demonstrated the

  7. Stress infirmier en milieu hospitalier: Prendre soin de Soi pour prendre soin d'Autrui

    OpenAIRE

    Rastelletti, Alison; Varin, Adriane; Louis, Stéphanie; Schirlin, Olivier

    2016-01-01

    Problématique : Le syndrome d’épuisement professionnel – dit burnout - est caractérisé par un épuisement émotionnel qui peut aboutir à une déshu-manisation de la relation à l’autre, voire à une impression de démotivation et/ou d’échec professionnel assimilables à une douloureuse perte de sens. L’infirmier y est particulièrement exposé, du fait qu’il est en permanence con-fronté aux douleurs, aux peines, voire à la mort de celles et ceux dont il s’occupe. Il est donc très important qu’il puiss...

  8. De Sumer à Seattle, le voyage du bout du monde

    Directory of Open Access Journals (Sweden)

    Olivier Walther

    2008-12-01

    Full Text Available « Les affaires qui se nouent par-dessus les frontières qui séparent les peuples ne font pas que ces frontières n'existent pas » notait Émile Durkheim en 1895 (1895 : 113. Un peu plus d’un siècle plus tard, l’ouvrage de William J. Bernstein intitulé A Splendid Exchange et sous-titré de manière inspirée How Trade Shaped the World vient apporter une confirmation étayée au sociologue français. De Sumer où fut introduit le commerce du cuivre 3000 ans avant Jésus-Christ, à Seattle où se tint la tr...

  9. Le cas du Haut-Adige ou Tyrol du Sud

    Directory of Open Access Journals (Sweden)

    Licia Bagini Scantamburlo

    2007-06-01

    Full Text Available La situation de cette région italienne est vraiment emblématique des rapports entre « les territoires et l’identité » à cause de la présence de différentes communautés linguistiques autochtones, dont les plus importantes sont les minorités germanophone et latine. S’il est vrai que cette situation existe également dans d’autres régions italiennes, il est incontestable que dans le Haut-Adige/Tyrol du Sud elle présente des caractéristiques très spécifiques et uniques pour l’Italie, car les italo...

  10. DIDA: Distributed Indexing Dispatched Alignment.

    Directory of Open Access Journals (Sweden)

    Hamid Mohamadi

    Full Text Available One essential application in bioinformatics that is affected by the high-throughput sequencing data deluge is the sequence alignment problem, where nucleotide or amino acid sequences are queried against targets to find regions of close similarity. When queries are too many and/or targets are too large, the alignment process becomes computationally challenging. This is usually addressed by preprocessing techniques, where the queries and/or targets are indexed for easy access while searching for matches. When the target is static, such as in an established reference genome, the cost of indexing is amortized by reusing the generated index. However, when the targets are non-static, such as contigs in the intermediate steps of a de novo assembly process, a new index must be computed for each run. To address such scalability problems, we present DIDA, a novel framework that distributes the indexing and alignment tasks into smaller subtasks over a cluster of compute nodes. It provides a workflow beyond the common practice of embarrassingly parallel implementations. DIDA is a cost-effective, scalable and modular framework for the sequence alignment problem in terms of memory usage and runtime. It can be employed in large-scale alignments to draft genomes and intermediate stages of de novo assembly runs. The DIDA source code, sample files and user manual are available through http://www.bcgsc.ca/platform/bioinfo/software/dida. The software is released under the British Columbia Cancer Agency License (BCCA, and is free for academic use.

  11. COMMUNICATION DU CREDIT AGRICOLE - French version only

    CERN Multimedia

    2003-01-01

    La Direction du Crédit Agricole informe son aimable clientèle du CERN des jours et heures d'ouverture de l'agence du site de Prévessin à compter du mardi 14 janvier 2003 : 1. Horaires pour les opérations bancaires courantes 7 jours sur 7 et 24h/24 avec l'espace libre service bancaire. 2. Horaires conseil du mardi au vendredi - Mardi, de 9h. à 12h. et de 14h.15 à 16h.30. - Mercredi, jeudi et vendredi, de 9h. à 12h. et de 13h.30 à 16h.30. Deux collaboratrices au lieu d'une seront désormais présentes toute la journée du mardi au vendredi pour vous accueillir, vous informer et vous conseiller en crédits et placements (réception conseil sur rendez-vous). Autre nouveauté : les mêmes conseillers seront aussi à votre disposition le samedi, sur notre agence de Gex, de 8h.15 à 13h.05, notamment pour les études de financements habitat. La Direction et toute l'équipe de l'agence du Crédit Agricole vous souhaitent une excellent année 2003.

  12. Approche de prise en charge du trouble du spectre de l’autisme

    Science.gov (United States)

    Lee, Patrick F.; Thomas, Roger E.; Lee, Patricia A.

    2015-01-01

    Résumé Objectif Se pencher sur les critères diagnostiques du trouble du spectre de l’autisme (TSA) comme les définit le Manuel diagnostique et statistique des troubles mentaux, cinquième édition (DSM-V), et concevoir une approche de prise en charge du TSA à l’aide du cadre CanMEDS–Médecine familiale (CanMEDS-MF). Sources d’information Le DSM-V, publié par l’American Psychiatric Association en mai 2013, énonce de nouveaux critères diagnostiques du TSA. Le cadre CanMEDS-MF du Collège des médecins de famille du Canada fournit un plan d’orientation pour la prise en charge complexe du TSA. Nous avons utilisé des données recueillies par le Centers for Disease Control and Prevention afin de déterminer la prévalence du TSA, ainsi que la revue systématique et méta-analyse détaillée effectuée par le National Institute for Health and Care Excellence du R.-U. pour ses lignes directrices sur le TSA dans le but d’évaluer les données probantes issues de plus de 100 interventions. Message principal Selon les données du Centers for Disease Control and Prevention, la prévalence du TSA se chiffrait à 1 sur 88 en 2008 aux États-Unis. La classification du TSA dans la quatrième édition du DSM incluait l’autisme, le syndrome d’Asperger, le trouble envahissant du développement et le trouble désintégratif de l’enfance. La dernière révision du DSM-V réunit tous ces troubles sous la mention TSA, avec différents niveaux de sévérité. La prise en charge du TSA est complexe; elle exige les efforts d’une équipe multidisciplinaire ainsi que des soins continus. Les rôles CanMEDS-MF fournissent un cadre de prise en charge. Conclusion Les médecins de famille sont au cœur de l’équipe de soins multidisciplinaire pour le TSA, et le cadre CanMEDS-MF tient lieu de plan détaillé pour guider la prise en charge d’un enfant atteint de TSA et aider la famille de cet enfant.

  13. Nouvelles du Centre Aéré de l’Association du Personnel du CERN

    CERN Multimedia

    Jardin d'enfants

    2015-01-01

    Cet été 2015, durant quatre semaines d’été, le Centre Aéré a accueilli plus de 40 enfants âgés de 4 à 6 ans. Devant le succès rencontré, et à la demande des parents, il a été décidé d’en doubler la capacité maximale. A l'été 2016, du 4 au 29 juillet, la structure pourra accueillir les enfants de 4 ans révolus et de moins de 7 ans (nés après le 31/07/2009 mais avant  01/07/2012). Les inscriptions se feront à la semaine durant le mois d'Avril 2016. Les programmes sont en cours d'élaboration cependant nous pouvons déjà vous communiquer le thème conducteur du centre qui sera : à la découverte d'un continent différent chaque ...

  14. General Alignment Concept of the CMS experiment

    CERN Document Server

    Lampen, T

    2006-01-01

    Efficient and accurate track reconstruction requires proper alignment of the tracking devices used. Here we describe the general alignment strategy envisaged for the CMS experiment. The hardware alignment devices of CMS are presented as well as the different track based alignment approaches.

  15. Photosensitive Polymers for Liquid Crystal Alignment

    Science.gov (United States)

    Mahilny, U. V.; Stankevich, A. I.; Trofimova, A. V.; Muravsky, A. A.; Murauski, A. A.

    The peculiarities of alignment of liquid crystal (LC) materials by the layers of photocrosslinkable polymers with side benzaldehyde groups are considered. The investigation of mechanism of photostimulated alignment by rubbed benzaldehyde layer is performed. The methods of creation of multidomain aligning layers on the basis of photostimulated rubbing alignment are described.

  16. Sylvain Fagot, Le cirque. Entre culture du corps et culture du risque

    OpenAIRE

    Crochet-Giacometti, Nicolas

    2011-01-01

    Cet ouvrage écrit par Sylvain Fagot, chercheur en sociologie associé à l'université du Québec, et auteur d'une thèse soutenue en 2003 intitulée « Ethno-sociologie du cirque. Arts de la piste / Arts du corps / Arts du risque », s'intéresse à un monde peu connu : celui du cirque. L'objectif y est de montrer comment chaque forme du cirque, le cirque dit « classique » et le cirque dit « nouveau », ont des stratégies sociales et économiques différentes mais surtout un rapport au corps et au risque...

  17. Alignment method for parabolic trough solar concentrators

    Science.gov (United States)

    Diver, Richard B [Albuquerque, NM

    2010-02-23

    A Theoretical Overlay Photographic (TOP) alignment method uses the overlay of a theoretical projected image of a perfectly aligned concentrator on a photographic image of the concentrator to align the mirror facets of a parabolic trough solar concentrator. The alignment method is practical and straightforward, and inherently aligns the mirror facets to the receiver. When integrated with clinometer measurements for which gravity and mechanical drag effects have been accounted for and which are made in a manner and location consistent with the alignment method, all of the mirrors on a common drive can be aligned and optimized for any concentrator orientation.

  18. Adaptive Processing for Sequence Alignment

    KAUST Repository

    Zidan, Mohammed Affan

    2012-01-26

    Disclosed are various embodiments for adaptive processing for sequence alignment. In one embodiment, among others, a method includes obtaining a query sequence and a plurality of database sequences. A first portion of the plurality of database sequences is distributed to a central processing unit (CPU) and a second portion of the plurality of database sequences is distributed to a graphical processing unit (GPU) based upon a predetermined splitting ratio associated with the plurality of database sequences, where the database sequences of the first portion are shorter than the database sequences of the second portion. A first alignment score for the query sequence is determined with the CPU based upon the first portion of the plurality of database sequences and a second alignment score for the query sequence is determined with the GPU based upon the second portion of the plurality of database sequences.

  19. Laser shaft alignment measurement model

    Science.gov (United States)

    Mo, Chang-tao; Chen, Changzheng; Hou, Xiang-lin; Zhang, Guoyu

    2007-12-01

    Laser beam's track which is on photosensitive surface of the a receiver will be closed curve, when driving shaft and the driven shaft rotate with same angular velocity and rotation direction. The coordinate of arbitrary point which is on the curve is decided by the relative position of two shafts. Basing on the viewpoint, a mathematic model of laser alignment is set up. By using a data acquisition system and a data processing model of laser alignment meter with single laser beam and a detector, and basing on the installation parameter of computer, the state parameter between two shafts can be obtained by more complicated calculation and correction. The correcting data of the four under chassis of the adjusted apparatus moving on the level and the vertical plane can be calculated. This will instruct us to move the apparatus to align the shafts.

  20. Error-free Dispersion-uncompensated Transmission at 20 Gb/s over SSMF using a Hybrid III-V/SOI DML with MRR Filtering

    DEFF Research Database (Denmark)

    Cristofori, Valentina; Kamchevska, Valerija; Ding, Yunhong

    2016-01-01

    Error-free 20-Gb/s directly-modulated transmission is achieved by enhancing the dispersion tolerance of a III-V/SOI DFB laser with a silicon micro-ring resonator. Low (∼0.4 dB) penalty compared to back-to-back without ring is demonstrated after 5-km SSMF....

  1. Clear correspondence between gated-diode R-G current and performance degradation of SOI n-MOSFETs after F-N stress tests

    Institute of Scientific and Technical Information of China (English)

    He Jin; Ma Chenyue; Wang Hao; Chen Xu; Zhang Chenfei; Lin Xinnan; Zhang Xing

    2009-01-01

    A clear correspondence between the gated-diode generation-recombination (R-G) current and the per-formance degradation of an SOI n-channel MOS transistor after F-N stress tests has been demonstrated. Due to the increase of interface traps after F-N stress tests, the R-G current of the gated-diode in the SOI-MOSFET architecture increases while the performance characteristics of the MOSFET transistor such as the saturation drain current and sub-threshold slope are degraded. From a series of experimental measurements of the gated-diode and SOI-MOSFET DC characteristics, a linear decrease of the drain saturation current and increase of the threshold volt-age as well as a like-line rise of the sub-threshold swing and a corresponding degradation in the trans-conductance are also observed. These results provide theoretical and experimental evidence for us to use the gated-diode tool to monitor SOI-MOSFET degradation.

  2. 离子注入SOI薄膜材料的制备及性能%Formation of SOI films by ion implantation into Si and their propertie

    Institute of Scientific and Technical Information of China (English)

    卢殿通; Rysse.,H

    2000-01-01

    The SOI (silicon-on-insulator) technology was regarded as a very important technique of the silicon-integrated ci rcuit in the 21 century. The SIMOX (separation by implanted oxygen) and SI MNI (separation by implanted nitrogen) films were formed by Oor Nion implantation into silicon with several methods. The SR (spreading resista nce), Hall effets and DLTS (deep-level transient spectroscopy) measurements were used to analyse the surface electrical properties of the SOI structures. The results show that the step-implanted SOI films have good electrical properties.%SOI-CMOS电路具有高速度、低功耗、抗辐照等优点。用氧、氮离子注入硅中,得到性能良好的SIMOX和SIMNI薄膜材料。用扩展电阻、霍耳效应和深能级瞬态谱等多种方法研究了SOI材料表面界面的电 学性能。并对各种方法进行了讨论。结果显示,用分步注入和分步退火制备的SOI材料大大地改善了材料的电学性能。

  3. Influence of plasma-etch damage on the interface states in SOI structures investigated by capacitance-voltage measurements and simulations

    Science.gov (United States)

    Jo, Yeong-Deuk; Koh, Jung-Hyuk; Ha, Jae-Geun; Kim, Ji-Hong; Cho, Dae-Hyung; Moon, Byung-Moo; Koo, Sang-Mo

    2009-12-01

    Au/SiO2/n-Si metal-oxide-silicon-on-insulator (MOSOI) capacitors were fabricated to study the damage caused by reactive ion etching (RIE) on (1 1 0) oriented silicon-on-insulator (SOI) substrates. The MOSOI capacitors with an etch-damaged SOI layer were characterized by capacitance-voltage (C-V) measurements and compared to the sacrificial oxidation treated samples and the reference samples without etching treatment. The measurements revealed that C-V curves significantly change and a negative voltage shift occurs for plasma-damaged capacitors. The simulated band diagram profiles and potential distribution of the corresponding structures indicate that the C-V shift is mainly due to the removal of a parasitic depletion capacitance (Cp) in the substrate, when the interface charges (Qf) are present at the gate oxide/SOI interface. For etch-damaged MOSOI samples, the surface roughness and the interface charges (Qf) have been found to increase by ~1.94 × 1012 cm-2 with respect to the reference devices, whereas the increase was reduced for sacrificial-oxidation treated samples, which implies a recovery from the plasma-induced etch damage on SOI structures.

  4. Fr-TM-align: a new protein structural alignment method based on fragment alignments and the TM-score

    Directory of Open Access Journals (Sweden)

    Skolnick Jeffrey

    2008-12-01

    Full Text Available Abstract Background Protein tertiary structure comparisons are employed in various fields of contemporary structural biology. Most structure comparison methods involve generation of an initial seed alignment, which is extended and/or refined to provide the best structural superposition between a pair of protein structures as assessed by a structure comparison metric. One such metric, the TM-score, was recently introduced to provide a combined structure quality measure of the coordinate root mean square deviation between a pair of structures and coverage. Using the TM-score, the TM-align structure alignment algorithm was developed that was often found to have better accuracy and coverage than the most commonly used structural alignment programs; however, there were a number of situations when this was not true. Results To further improve structure alignment quality, the Fr-TM-align algorithm has been developed where aligned fragment pairs are used to generate the initial seed alignments that are then refined using dynamic programming to maximize the TM-score. For the assessment of the structural alignment quality from Fr-TM-align in comparison to other programs such as CE and TM-align, we examined various alignment quality assessment scores such as PSI and TM-score. The assessment showed that the structural alignment quality from Fr-TM-align is better in comparison to both CE and TM-align. On average, the structural alignments generated using Fr-TM-align have a higher TM-score (~9% and coverage (~7% in comparison to those generated by TM-align. Fr-TM-align uses an exhaustive procedure to generate initial seed alignments. Hence, the algorithm is computationally more expensive than TM-align. Conclusion Fr-TM-align, a new algorithm that employs fragment alignment and assembly provides better structural alignments in comparison to TM-align. The source code and executables of Fr-TM-align are freely downloadable at: http://cssb.biology.gatech.edu/skolnick/files/FrTMalign/.

  5. Souci du social et action publique sur mesure

    Directory of Open Access Journals (Sweden)

    Bertrand Ravon

    2008-10-01

    Full Text Available L’engagement dans la lutte contre les problèmes sociaux s’est transformé. Avec l’individualisation et la territorialisation du traitement public des problèmes sociaux, se pose de plus en plus nettement la question d’une action publique de proximité, intersubjective. Mais plutôt que de renvoyer immédiatement les raisons de cette action publique sur mesure à une critique de la psychologisation des rapports sociaux ou du déclin des institutions, il s’agit de l’analyser comme une expérience publique, avec son lot d’actions et d’affects, de convictions et d’inquiétudes, de ressources et de préoccupations. La notion de souci s’impose alors pour tenir ce double mouvement de l’engagement, entre agir et subir, des épreuves qui nous conduisent dans l’action aux attentes qui nous y maintiennent. À partir de plusieurs exemples de formation de problèmes sociaux, l’article décline alors le souci des acteurs dans deux directions. D’une part, le souci de soi est analysé comme un engagement public au sens d’un travail d’orientation de soi dans un monde incertain via la reprise d’expériences sociales négatives. D’autre part, le souci commun est envisagé comme une « communauté de charge », c’est-à-dire comme un collectif d’action publique fondé non pas à partir de propriétés communes mais à partir d’affects partagés.“Concern” in the social sphere and public action adapted to the client: singular and critical public experience of social problemsCommitment in the struggle against social problems has changed. Along with the individualisation and territorial decentralisation of the public treatment of social problems, the question of very local and intersubjective public action has come more and more into focus. But rather than immediately relegating the reasons for this tailor-made version of social action to a critique of the increasing influence of psychological methods in social relations

  6. XUV ionization of aligned molecules

    Energy Technology Data Exchange (ETDEWEB)

    Kelkensberg, F.; Siu, W.; Gademann, G. [FOM Institute AMOLF, Science Park 104, NL-1098 XG Amsterdam (Netherlands); Rouzee, A.; Vrakking, M. J. J. [FOM Institute AMOLF, Science Park 104, NL-1098 XG Amsterdam (Netherlands); Max-Born-Institut, Max-Born Strasse 2A, D-12489 Berlin (Germany); Johnsson, P. [FOM Institute AMOLF, Science Park 104, NL-1098 XG Amsterdam (Netherlands); Department of Physics, Lund University, Post Office Box 118, SE-221 00 Lund (Sweden); Lucchini, M. [Department of Physics, Politecnico di Milano, Istituto di Fotonica e Nanotecnologie CNR-IFN, Piazza Leonardo da Vinci 32, 20133 Milano (Italy); Lucchese, R. R. [Department of Chemistry, Texas A and M University, College Station, Texas 77843-3255 (United States)

    2011-11-15

    New extreme-ultraviolet (XUV) light sources such as high-order-harmonic generation (HHG) and free-electron lasers (FELs), combined with laser-induced alignment techniques, enable novel methods for making molecular movies based on measuring molecular frame photoelectron angular distributions. Experiments are presented where CO{sub 2} molecules were impulsively aligned using a near-infrared laser and ionized using femtosecond XUV pulses obtained by HHG. Measured electron angular distributions reveal contributions from four orbitals and the onset of the influence of the molecular structure.

  7. The alignment-distribution graph

    Science.gov (United States)

    Chatterjee, Siddhartha; Gilbert, John R.; Schreiber, Robert

    1993-01-01

    Implementing a data-parallel language such as Fortran 90 on a distributed-memory parallel computer requires distributing aggregate data objects (such as arrays) among the memory modules attached to the processors. The mapping of objects to the machine determines the amount of residual communication needed to bring operands of parallel operations into alignment with each other. We present a program representation called the alignment distribution graph that makes these communication requirements explicit. We describe the details of the representation, show how to model communication cost in this framework, and outline several algorithms for determining object mappings that approximately minimize residual communication.

  8. Position list word aligned hybrid

    DEFF Research Database (Denmark)

    Deliege, Francois; Pedersen, Torben Bach

    2010-01-01

    Compressed bitmap indexes are increasingly used for efficiently querying very large and complex databases. The Word Aligned Hybrid (WAH) bitmap compression scheme is commonly recognized as the most efficient compression scheme in terms of CPU efficiency. However, WAH compressed bitmaps use a lot...... of storage space. This paper presents the Position List Word Aligned Hybrid (PLWAH) compression scheme that improves significantly over WAH compression by better utilizing the available bits and new CPU instructions. For typical bit distributions, PLWAH compressed bitmaps are often half the size of WAH...

  9. Chapitre VI. Prudence du financement

    OpenAIRE

    Jambard, Pierre

    2015-01-01

    L’histoire financière de la société permet de comprendre bien des traits de son histoire. Comme toutes les entreprises du bâtiment et des travaux publics, la Société Auxiliaire s’est trouvée devant la nécessité de disposer d’importants capitaux circulants. Grâce à une gestion financière efficace, elle est, en général, parvenue à dégager de son activité les fonds nécessaires, bien que l’aisance de la trésorerie quotidienne n’ait été acquise qu’avec la reconversion. Les années 1927-1946 sont ce...

  10. L’abolition du vieillissement

    Directory of Open Access Journals (Sweden)

    Josef Reindl

    2012-02-01

    Full Text Available I « L’humanité vieillit à un rythme inimaginable. (... »« L’humanité vieillit à un rythme inimaginable. Nous devons résoudre le problème de notre propre vieillissement pour résoudre celui du monde entier. » M. Schirrmacher, l’un des intellectuels médiatiques les plus connus de l’Allemagne, joue comme toujours de façon magistrale la partition de l’effroi. Il ne se contente nullement de s’arranger avec son propre vieillissement, mais il veut sauver le monde à travers « une révolution militante...

  11. Arabidopsis SOI33/AtENT8 Gene Encodes a Putative Equilibrative Nucleoside Transporter That Is Involved in Cytokinin Transport In Planta

    Institute of Scientific and Technical Information of China (English)

    Jiaqiang SUN; Naoya HIROSE; Xingchun WANG; Pei WEN; Li XUE; Hitoshi SAKAKIBARA; Jianru ZUO

    2005-01-01

    The plant phytohormone cytokinin plays an important role in many facets of plant growth and development by regulating cell division and differentiation. Recent studies have shed significant light into the mechanisms of cytokinin metabolism and signaling. However, little is known about how the hormone is transported in planta, although it has been proposed that the hormone is presumably transported in nucleoside-conjugated forms. Here, we report the identification and characterization of cytokinin transport ers in Arabidopsis. We previously reported that a gain-of-function mutation in the PGA22/AtIPT8 gene caused overproduction of cytokinins in planta. In an effort to screen for suppressor of pga22/atipt8 (soi) mutants, we identified a mutant soi33-1. Molecular and genetic analyses indicated that SOI33 encodes a putative equilibrative nucleoside transporter (ENT), previously designated as AtENT8. Members of this small gene family are presumed to be involved in the transport of nucleosides in eukaryotic cells. Under conditions of nitrogen starvation, loss-of-function mutations in SOI33/AtENT8 or in a related gene AtENT3 cause a reduced sensitivity to the nucleoside-type cytokinins isopentenyladenine riboside (iPR) and trans zeatin riboside (tZR), but display a normal response to the free base-type cytokinins isopentenyladenine (iP) and trans-zeatin (tZ). Conversely, overexpression of SOI33/AtENT8 renders transgenic plants hyper sensitive to iPR but not to iP. An in planta measurement experiment indicated that uptake efficiency of 3H labeled iPR was reduced more than 40% in soi33 and atent3 mutants. However, a mutation inAtENT1 had no substantial effect on the cytokinin response and iPR uptake efficiency. Our results suggest that SOI33/ AtENT8 and AtENT3 are involved in the transport of nucleoside-type cytokinins in Arabidopsis.

  12. Structural makeup, biopolymer conformation, and biodegradation characteristics of a newly developed super genotype of oats (CDC SO-I versus conventional varieties): a novel approach.

    Science.gov (United States)

    Damiran, Daalkhaijav; Yu, Peiqiang

    2010-02-24

    Recently, a new "super" genotype of oats (CDC SO-I or SO-I) has been developed. The objectives of this study were to determine structural makeup (features) of oat grain in endosperm and pericarp regions and to reveal and identify differences in protein amide I and II and carbohydrate structural makeup (conformation) between SO-I and two conventional oats (CDC Dancer and Derby) grown in western Canada in 2006, using advanced synchrotron radiation based Fourier transform infrared microspectroscopy (SRFTIRM). The SRFTIRM experiments were conducted at National Synchrotron Light Sources, Brookhaven National Laboratory (NSLS, BNL, U.S. Department of Energy). From the results, it was observed that comparison between the new genotype oats and conventional oats showed (1) differences in basic chemical and protein subfraction profiles and energy values with the new SO-I oats containing lower lignin (21 g/kg of DM) and higher soluble crude protein (530 g/kg CP), crude fat (59 g/kg of DM), and energy values (TDN, 820 g/kg of DM; NE(L3x), 7.8 MJ/kg of DM); (2) significant differences in rumen biodegradation kinetics of dry matter, starch, and protein with the new SO-I oats containing lower EDDM (638 g/kg of DM) and higher EDCP (103 g/kg of DM); (3) significant differences in nutrient supply with highest truly absorbed rumen undegraded protein (ARUP, 23 g/kg of DM) and total metabolizable protein supply (MP, 81 g/kg of DM) from the new SO-I oats; and (4) significant differences in structural makeup in terms of protein amide I in the endosperm region (with amide I peak height from 0.13 to 0.22 IR absorbance unit) and cellulosic compounds to carbohydrate ratio in the pericarp region (ratio from 0.02 to 0.06). The results suggest that with the SRFTIRM technique, the structural makeup differences between the new genotype oats (SO-I) and two conventional oats (Dancer and Derby) could be revealed.

  13. Structural Make-up, Biopolymer Conformation, and Biodegradation Characteristics of Newly Developed Super Genotype of Oats (CDC SO-I vs. Conventional Varieties): Novel Approach

    Energy Technology Data Exchange (ETDEWEB)

    Damiran, D.; Yu, P

    2010-01-01

    Recently, a new 'super' genotype of oats (CDC SO-I or SO-I) has been developed. The objectives of this study were to determine structural makeup (features) of oat grain in endosperm and pericarp regions and to reveal and identify differences in protein amide I and II and carbohydrate structural makeup (conformation) between SO-I and two conventional oats (CDC Dancer and Derby) grown in western Canada in 2006, using advanced synchrotron radiation based Fourier transform infrared microspectroscopy (SRFTIRM). The SRFTIRM experiments were conducted at National Synchrotron Light Sources, Brookhaven National Laboratory (NSLS, BNL, U.S. Department of Energy). From the results, it was observed that comparison between the new genotype oats and conventional oats showed (1) differences in basic chemical and protein subfraction profiles and energy values with the new SO-I oats containing lower lignin (21 g/kg of DM) and higher soluble crude protein (530 g/kg CP), crude fat (59 g/kg of DM), and energy values (TDN, 820 g/kg of DM; NE{sub L3x}, 7.8 MJ/kg of DM); (2) significant differences in rumen biodegradation kinetics of dry matter, starch, and protein with the new SO-I oats containing lower EDDM (638 g/kg of DM) and higher EDCP (103 g/kg of DM); (3) significant differences in nutrient supply with highest truly absorbed rumen undegraded protein (ARUP, 23 g/kg of DM) and total metabolizable protein supply (MP, 81 g/kg of DM) from the new SO-I oats; and (4) significant differences in structural makeup in terms of protein amide I in the endosperm region (with amide I peak height from 0.13 to 0.22 IR absorbance unit) and cellulosic compounds to carbohydrate ratio in the pericarp region (ratio from 0.02 to 0.06). The results suggest that with the SRFTIRM technique, the structural makeup differences between the new genotype oats (SO-I) and two conventional oats (Dancer and Derby) could be revealed.

  14. Sulphite metabolism; Metabolisme du sulfite

    Energy Technology Data Exchange (ETDEWEB)

    Fromageot, P.; Chapeville, F. [Commissariat a l' Energie Atomique, Saclay (France).Centre d' Etudes Nucleaires

    1960-07-01

    Although the formation of sulphite by micro-organisms was observed as early as 1914 by Neuberg, it was only in 1932 that Nightingale showed it to be present inside cells, in the case of tomato leaf stalks, its formation being due to the reaction: SO{sub 3}H{sup -} + (S{sub 2}O{sub 3}){sub 2}{sup --} {yields} S{sub 2}O{sub 3}{sup --} + O{sub 3}S{sub 2}O{sub 3}{sup --}. The presence of the thiosulphate formed was shown by the high refractive index of its barium salt. Today we have a certain amount of data concerning the formation and use of sulphite in the living cell, even through the knowledge is still incomplete. In this article we will describe and discuss the facts which are known, with particular reference to the oxidation of sulphite. (author) [French] Si la formation de sulfite par des micro-organismes a ete observee des 1914 par Neuberg, sa presence a l'interieur des cellules a ete demontree pour la premiere fois par Nightingale en 1932, dans des tiges et des feuilles de tomates, par la reaction: SO{sub 3}H{sup -} + (S{sub 2}O{sub 3}){sub 2}{sup --} {yields} S{sub 2}O{sub 3}{sup --} + O{sub 3}S{sub 2}O{sub 3}{sup --}. Le thiosulfate forme etait mis en evidence par l'indice de refraction eleve de son sel de baryum. Aujourd'hui on possede un certain nombre de donnees, cependant encore tres incompletes, sur la formation du sulfite et son utilisation par la cellule vivante. Dans cet expose nous decrirons et discuterons quelques-unes de ces acquisitions, tout particulierement celles relatives a l'oxydation du sulfite. (auteur)

  15. Sulphite metabolism; Metabolisme du sulfite

    Energy Technology Data Exchange (ETDEWEB)

    Fromageot, P.; Chapeville, F. [Commissariat a l' Energie Atomique, Saclay (France).Centre d' Etudes Nucleaires

    1960-07-01

    Although the formation of sulphite by micro-organisms was observed as early as 1914 by Neuberg, it was only in 1932 that Nightingale showed it to be present inside cells, in the case of tomato leaf stalks, its formation being due to the reaction: SO{sub 3}H{sup -} + (S{sub 2}O{sub 3}){sub 2}{sup --} {yields} S{sub 2}O{sub 3}{sup --} + O{sub 3}S{sub 2}O{sub 3}{sup --}. The presence of the thiosulphate formed was shown by the high refractive index of its barium salt. Today we have a certain amount of data concerning the formation and use of sulphite in the living cell, even through the knowledge is still incomplete. In this article we will describe and discuss the facts which are known, with particular reference to the oxidation of sulphite. (author) [French] Si la formation de sulfite par des micro-organismes a ete observee des 1914 par Neuberg, sa presence a l'interieur des cellules a ete demontree pour la premiere fois par Nightingale en 1932, dans des tiges et des feuilles de tomates, par la reaction: SO{sub 3}H{sup -} + (S{sub 2}O{sub 3}){sub 2}{sup --} {yields} S{sub 2}O{sub 3}{sup --} + O{sub 3}S{sub 2}O{sub 3}{sup --}. Le thiosulfate forme etait mis en evidence par l'indice de refraction eleve de son sel de baryum. Aujourd'hui on possede un certain nombre de donnees, cependant encore tres incompletes, sur la formation du sulfite et son utilisation par la cellule vivante. Dans cet expose nous decrirons et discuterons quelques-unes de ces acquisitions, tout particulierement celles relatives a l'oxydation du sulfite. (auteur)

  16. Xenotransplanted human prostate carcinoma (DU145) cells develop into carcinomas and cribriform carcinomas: ultrastructural aspects.

    Science.gov (United States)

    Gilloteaux, Jacques; Jamison, James M; Neal, Deborah R; Summers, Jack L; Taper, Henryk S

    2012-10-01

    Androgen-independent, human prostate carcinoma cells (DU145) develop into solid, carcinomatous xenotransplants on the diaphragm of nu/nu mice. Tumors encompass at least two poorly differentiated cell types: a rapidly dividing, eosinophilic cell comprises the main cell population and a few, but large basophilic cells able to invade the peritoneal stroma, the muscular tissue, lymph vessels. Poor cell contacts, intracytoplasmic lumina, and signet cells are noted. Lysosomal activities are reflected by entoses and programmed cell deaths forming cribriform carcinomas. In large tumors, degraded cells may align with others to facilitate formation of blood supply routes. Malignant cells would spread via ascites and through lymphatics.

  17. Development FD-SOI MOSFET Amplifiers for Integrated Read-Out Circuit of Superconducting-Tunnel-Junction Single-Photon-Detectors

    Energy Technology Data Exchange (ETDEWEB)

    Kiuchi, Kenji; et al.

    2015-07-27

    We proposed a new high-resolution single-photon infrared spectrometer for search for radiative decay of cosmic neutrino background (CνB). The superconducting-tunnel-junctions(STJs) are used as a single-photon counting device. Each STJ consists of Nb/Al/AlxOy/Al/Nb layers, and their thicknesses are optimized for the operation temperature at 370 mK cooled by a 3He sorption refrigerator. Our STJs achieved the leak current 250 pA, and the measured data implies that a smaller area STJ fulfills our requirement. FD-SOI MOSFETs are employed to amplify the STJ signal current in order to increase signal-to-noise ratio (S/N). FD-SOI MOSFETs can be operated at cryogenic temperature of 370 mK, which reduces the noise of the signal amplification system. FD-SOI MOSFET characteristics are measured at cryogenic temperature. The Id-Vgs curve shows a sharper turn on with a higher threshold voltage and the Id-Vds curve shows a nonlinear shape in linear region at cryogenic temperature. Taking into account these effects, FD-SOI MOSFETs are available for read-out circuit of STJ detectors. The bias voltage for STJ detectors is 0.4 mV, and it must be well stabilized to deliver high performance. We proposed an FD-SOI MOSFET-based charge integrated amplifier design as a read-out circuit of STJ detectors. The requirements for an operational amplifier used in the amplifier is estimated using SPICE simulation. The op-amp is required to have a fast response (GBW ≥ 100 MHz), and it must have low power dissipation as compared to the cooling power of refrigerator.

  18. Daphne du Maurier' unustatud jutud / Udo Uibo

    Index Scriptorium Estoniae

    Uibo, Udo, 1956-

    2011-01-01

    Ajalehe "The Independent" teatel kavatseb kirjastus "Virago" maikuus avaldada Daphne Du Maurier lühiproosa kogumiku "Nukk" (The Doll), mille on koostanud tema loomingu suur austaja Ann Willmore ja mis sisaldab 13 unustatud ja seni avaldamata novelli

  19. Flaubert et Du Camp : quelques remarques

    Directory of Open Access Journals (Sweden)

    Michel Brix

    2016-12-01

    Full Text Available Les spécialistes de Flaubert ont fait de nombreux reproches à Maxime Du Camp et ne prêtent plus guère d’attention à ce qu’il a écrit. C’est une situation très regrettable, qui prive les lecteurs d’informations nombreuses, susceptibles d’éclairer les enjeux mais aussi les impasses et les contradictions du projet esthétique de Flaubert. Quelques cas significatifs sont évoqués dans le présent article, qui se penche plus particulièrement sur la ressemblance entre un passage du livre de Du Camp Le Nil (1854 et les lignes de L’Éducation sentimentale (1869 qui rapportent l’“apparition” de Mme Arnoux.

  20. Inauguration du C/R Forum (Belgique

    Directory of Open Access Journals (Sweden)

    2009-04-01

    Full Text Available Le 16 février dernier, la Vlaamse beroepsvereniging Conservatie en Restauratie Forum (C/R Forum a été constituée à l'initiative de 18 personnes du milieu de la conservation/restauration et du secteur de la protection du patrimoine. Etant donné que la conservation et la gestion du patrimoine culturel mobilier et immobilier de même que la formation et la recherche relèvent des communautés et des régions, la nécessité est apparue depuis un certain temps de créer une organisation Flamande au sei...