WorldWideScience

Sample records for du soi alignement

  1. Propriété de soi et indifférence morale du rapport à soi

    Directory of Open Access Journals (Sweden)

    Nathalie Maillard Romagnoli

    2011-05-01

    Full Text Available Je m’interroge dans cet article sur les implications du principe libertarien de la pleine propriété de soi sur la question du rapport moral à soi-même. À travers le principe de la pleine propriété de soi, les libertariens défendent la liberté entière de chacun de vivre comme il l���entend, pourvu que les droits des autres soient respectés. Apparemment, ce principe n’a pas grand-chose à nous dire sur ce que nous sommes moralement autorisés à nous faire à nous-mêmes ou non. Certains libertariens, comme Vallentyne, soutiennent toutefois que le principe de la pleine propriété de soi est incompatible avec l’existence de devoirs envers soi. La pleine propriété de soi impliquerait l’indifférence morale du rapport à soi. Je soutiens dans cet article que le principe de la pleine propriété de soi n’implique pas que ce que nous nous faisons à nous-mêmes soit moralement indifférent. Je veux aussi montrer que même si les libertariens, et en particulier Vallentyne, soutiennent la thèse de l’indifférence morale du rapport à soi, celle-ci n’est pas liée à la thèse de la pleine propriété de soi, mais bien plutôt à leur subjectivisme moral.ABSTRACTI ask in this article what the libertarian principle of full self-ownership has to say about volontary actions directed towards oneself. Through the principle of full self-ownership, libertarians defend the persons’ individual liberty to live as they choose to do, as long as they don’t infringe on the rights of others. Apparently, this principle doesn’t have much to say about what we are morally allowed to do to ourselves or not. Some libertarians, however, like Vallentyne, maintain that, if we have duties or obligations to ourselves, then we cannot be full self-owner. In this perspective, full self-ownership would imply that what we do to ourselves is morally indifferent. I want to show in this article that full self-ownership is compatible with the

  2. A novel self-aligned oxygen (SALOX) implanted SOI MOSFET device structure

    Science.gov (United States)

    Tzeng, J. C.; Baerg, W.; Ting, C.; Siu, B.

    The morphology of the novel self-aligned oxygen implanted SOI (SALOX SOI) [1] MOSFET was studied. The channel silicon of SALOX SOI was confirmed to be undamaged single crystal silicon and was connected with the substrate. Buried oxide formed by oxygen implantation in this SALOX SOI structure was shown by a cross section transmission electron micrograph (X-TEM) to be amorphous. The source/drain silicon on top of the buried oxide was single crystal, as shown by the transmission electron diffraction (TED) pattern. The source/drain regions were elevated due to the buried oxide volume expansion. A sharp silicon—silicon dioxide interface between the source/drain silicon and buried oxide was observed by Auger electron spectroscopy (AES). Well behaved n-MOS transistor current voltage characteristics were obtained and showed no I-V kink.

  3. L’empathie comme outil herméneutique du soi: Note sur Paul Ricœur et Heinz Kohut

    Directory of Open Access Journals (Sweden)

    Michel Dupuis

    2011-01-01

    Full Text Available Le bref texte que Paul Ricœur consacre en 1986 à la psychanalyse développée par Heinz Kohut révèle une réinterprétation phénoménologique à la fois du contenu et des fonctions de l'empathie, au total considérée comme un véritable outil à l'œuvre dans l'herméneutique du soi. La vision kohutienne de la constitution du soi et du processus thérapeutique analytique produit une espèce de “dé-sentimentalisation” de l'empathie, en soulignant le rôle crucial du transfert intersubjectif, fort à distance de la théorie (freudienne solipsiste de l'ego.The short text published in 1986 by Paul Ricoeur about Heinz Kohut's psychoanalysis of the self reveals a phenomenological reinterpretation of the content and the functions of empathy, finally considered as an effective tool of the hermeneutics of the self. Kohut's model of constitution of the self and of the therapeutic analytical process produces a kind of “de-sentimentalization” of empathy, pointing to the crucial role of intersubjective transfer, far from a (Freudian solipsistic theory of the ego.

  4. Une genese du «parler de soi » du deja-la a l’evocation de l’absent dans l’activite dialogique du tout jeune enfant

    Directory of Open Access Journals (Sweden)

    Amina Bensalah

    2010-12-01

    Full Text Available

    L’analyse porte sur des productions langagières verbales et non-verbales les plus ordinaires entre des adultes et de très jeunes enfants âgés de moins de deux ans. En articulant les notions de l’évocation de l’absent et du déjà-là, notions qui mettent en avant le processus d’une «temporalité-spatialisée», je problématise la genèse d’un soi comme objet qui se donne à voir dans et par l’activité discursive. Mon hypothèse est que, s’agissant du tout jeune enfant qui ne peut donc s’auto-thématiser ni référer à lui-même de façon explicite, c’est bien dans l’évocation d’autrui et d’autres objets du monde qu’indirectement, il nous «parle» de lui. Trois éléments viennent étayer ma réfl exion pour répondre à la problématique posée : les notions de temporalité, de spatialité et d’affect. Elles sont clairement présentes dans les initiatives de demande, dans les mouvements des échanges et dans les séquences «pré-narratives» produites par l’enfant. Au vu des corpus, ces trois notions m’ont paru inséparables du lieu même où elles font ancrage, à savoir : l’interaction et le dialogue avec l’autre. L’approche adoptée dans l’analyse pour argumenter l’idée de l’expression d’un «parler de soi» chez le tout jeune enfant n’est pas tant, au sens strict, de type linguistique que de type pragmatique. Aussi, j’analyse les effets réciproques entre l’interaction et les échanges qui la modèlent.

  5. Le soi et l’estime de soi chez l’enfant: Une revue systématique de la littérature

    OpenAIRE

    Pinto, Alexandra Maria Pereira Inácio Sequeira; Gatinho, Ana Rita dos Santos; Tereno, Susana; Veríssimo, Manuela

    2016-01-01

    Cette étude vise : a) à analyser les différentes méthodes utilisées pour l’étude du Soi et chez les enfants, en ce que concerne sa qualité et son potentiel et b) à synthétiser les résultats déjà obtenus en termes de Soi/d’estime de soi/d’autoconcept, pour les enfants en âge préscolaire. Après avoir établi des critères rigoureux d’inclusion et d’exclusion, 33 articles ont été sélectionnés, dans plusieurs bases de données, nationales et international...

  6. Écritures de soi en souffrance: une lecture des régimes structurant l’imaginaire du texte social vivant

    Directory of Open Access Journals (Sweden)

    Orazio Maria Valastro

    2010-02-01

    Full Text Available Les études ici réunies vont nous permettre d’examiner différentes genres d’écritures et typologies d’écrivains (poétique et épistolaire, roman autobiographique et autofiction, narratif et témoignage, explorant un corpus considérable (œuvres littéraires et littératures personnelles et des pratiques significatives (activités narratives et autobiographiques. Le thème proposé, les écritures de soi en souffrance, se dénoue sollicitant une réflexion sur les rapports entre les œuvres et les différents contextes sociaux et historiques. Nous pouvons envisager et saisir l’ensemble du corpus et des pratiques considérées en tant que texte social vivant, inscrivant l’expérience de l’existence et du monde dans la pratique de l’écriture. (... Nous allons solliciter et proposer une lecture sociologique et anthropologique de l’ensemble des études proposés au sein du numéro monographique, privilégiant une analyse de la matrice du discours social structurant la conscience individuelle et collective.

  7. Alignement général du CLIC: stratégie et progrès

    CERN Document Server

    Mainaud-Durand, H

    2008-01-01

    La faisabilité concernant le pré-alignement actif du CLIC sera démontrée si l?on peut prouver qu?il existe une référence et ses capteurs associés permettant l?alignement des composants à mieux que 3 microns (1?). Pour répondre à ce challenge, une méthode de mesure d?écarts à un fil tendu est proposée, basée sur 40 ans de pratique de cette technique au CERN. Quelques problèmes demeurent concernant cette méthode : la connaissance de la forme du fil tendu utilisé comme référence droite, la détermination du géoïde à la précision souhaitée et le développement de capteurs bas coût permettant des mesures sub-micrométriques. Des études ont été entreprises afin de lever les derniers points en suspens, pendant que cette solution est intégrée dans une proposition concernant l?alignement général du CLIC. Cela implique un grand nombre d?interactions au niveau du projet, dans des domaines aussi différents que le génie civil, l?intégration, la physique du faisceau, la métrologie des �...

  8. Juan Goytisolo: Le soi, le monde et la création littéraire

    Directory of Open Access Journals (Sweden)

    Pablo Romero Alegría

    2010-01-01

    Full Text Available Reseña de la obra: Yannick Llored. Le soi, le monde et la création littéraire. Presses Universitaires du Septentrion. Villeneuve d’Ascq (Francia. 2009. 421 págs. ISBN: 978-2-75740-0089-0

  9. Jean-Pierre Famose et Jean Bertsch, L’estime de soi : une controverse éducative, Paris, PUF, 2009, 192 p

    OpenAIRE

    Benamar, Aïcha

    2015-01-01

    L’ouvrage porte sur l’estime de soi, dans la sphère sociale en général et le monde éducatif en particulier. L’estime de soi est au cœur du comportement individuel, apportant confiance et assurance, permettant de progresser et in fine de réussir. Une faible estime de soi est fréquemment à l’origine de difficultés pour un individu : doutes, hésitations, ou à l’inverse vanité et arrogance. Un bon niveau d’estime de soi confère à la personnalité : capacité à s’affirmer et respect des autres. Cent...

  10. du Chott Marouane

    African Journals Online (AJOL)

    plancton de 90 µm de vide de maille. Ils ont été conservés dans du formol à 5%. L'identification de l'espèce est basée sur des critères morphologiques [20]: la forme des furcas, les lobes frontaux des antennes des mâles, de l'organe copulateur (pénis) et du sac ovigère. Le comptage des soies furcales a été réalisé. L'étude ...

  11. Test-beam results of a SOI pixel detector prototype

    CERN Document Server

    Bugiel, Roma; Dannheim, Dominik; Fiergolski, Adrian; Hynds, Daniel; Idzik, Marek; Kapusta, P; Kucewicz, Wojciech; Munker, Ruth Magdalena; Nurnberg, Andreas Matthias

    2018-01-01

    This paper presents the test-beam results of a monolithic pixel-detector prototype fabricated in 200 nm Silicon-On-Insulator (SOI) CMOS technology. The SOI detector was tested at the CERN SPS H6 beam line. The detector is fabricated on a 500 μm thick high-resistivity float- zone n-type (FZ-n) wafer. The pixel size is 30 μm × 30 μm and its readout uses a source- follower configuration. The test-beam data are analysed in order to compute the spatial resolution and detector efficiency. The analysis chain includes pedestal and noise calculation, cluster reconstruction, as well as alignment and η-correction for non-linear charge sharing. The results show a spatial resolution of about 4.3 μm.

  12. De l’occidentalisation du soufisme à la réislamisation du New Age ? Sufi Order International et la globalisation du religieux

    Directory of Open Access Journals (Sweden)

    Alix Philippon

    2014-09-01

    Full Text Available Sufi Order International (SOI a été fondé au début du xxe siècle en Occident et pour un public occidental par Hazrat Inayat Khan, un musicien et disciple de l’ordre soufi indien de la Chishtiyya. Ce groupe offre l’exemple d’un soufisme occidental ayant trouvé sa place dans la nébuleuse New Age en embrassant des formes syncrétiques de spiritualité et en mettant l’accent sur l’universalisme du message soufi, par-delà l’islam per se. En retour, ce soufisme occidental a commencé à féconder les terres musulmanes en répondant aux demandes d’une bourgeoisie libérale et occidentalisée réfractaires aux offres religieuses généralement disponibles sur place et qui a trouvé dans ce discours soufi universaliste une voie d’accès acceptable à l’islam, passé au tamis de la modernité religieuse. Au travers de terrains en Suisse et au Pakistan au sein de SOI, cet article vise à analyser les dynamiques du mode de croyance contemporain articulées avec celles de la mondialisation religieuse.

  13. CONCEPTUALISATION ONTOLOGIQUE DE LA REPRÉSENTATION DU COMBAT CONCEPTUALISATION ONTOLOGIQUE DE LA REPRÉSENTATION DU COMBAT

    Directory of Open Access Journals (Sweden)

    Sylvain Rheault

    2012-10-01

    Full Text Available En adoptant une perspective existentielle, on peut tenter d'expliquer la représentation du combat au moyen de concepts comme les positions de SOI et de L'AUTRE ainsi que les statuts de l'ÊTRE et de la CHOSE, qui, une fois combinés, définissent des domaines ontologiques. Le combat devient alors, conceptuellement, l'action de forcer une conscience à passer d'un domaine à un autre. On observe qu'en modifiant l'intensité des positions (polarisation, des statuts (hiérarchisation et des actions (dosage, on peut expliquer les variations possibles des représentations du combat. Il restera à valider la pertinence de ces concepts en multipliant les analyses.En adoptant une perspective existentielle, on peut tenter d'expliquer la représentation du combat au moyen de concepts comme les positions de SOI et de L'AUTRE ainsi que les statuts de l'ÊTRE et de la CHOSE, qui, une fois combinés, définissent des domaines ontologiques. Le combat devient alors, conceptuellement, l'action de forcer une conscience à passer d'un domaine à un autre. On observe qu'en modifiant l'intensité des positions (polarisation, des statuts (hiérarchisation et des actions (dosage, on peut expliquer les variations possibles des représentations du combat. Il restera à valider la pertinence de ces concepts en multipliant les analyses.

  14. Méditation et pratique de soi chez Malebranche.

    Directory of Open Access Journals (Sweden)

    Éric Dubreucq

    2004-04-01

    Full Text Available Une étude des Méditations pour se disposer à l’Humilité et à la pénitence qui les replace dans le cadre des pratiques de son époque, par exemple, chez François de Sales, celles de l’oraison, de la méditation et de la contemplation, permet d’apercevoir que l’une des thèses majeures du malebranchisme, la vision en Dieu, est un effet instauré dans le destinataire par un dispositif textuel. Celui-ci tire sa puissance prescriptive de l’a priori pratique où il s’inscrit. C’est à une opération de production de soi que l’exercice spirituel donne lieu : l’analyse des quatre premières Méditations chrétiennes et métaphysiques, en particulier, montre que c’est une organisation de la substance personnelle que provoque le travail spirituel sur soi. Celui-ci consiste à déterminer le rapport à soi comme relation d’une vision attentive à une activité illuminante, par un décentrement textuel du « je » vers le « tu ».One of the major Malebranche’s assertion, that we see truth in God, is not a mere theoretical thesis. I study first the Méditations pour se disposer à l’Humilité et à la pénitence and compare them with François de Sales’ spiritual exercitations, and show that prayer, meditation and contemplation constitute the practical frameworks of this period. The text of the Méditations is an apparatus which is fit to cause an effect in its target – the self of the reader : the vision in God. The practical a priori of the meditation provides the text with prescriptive power to transform the self. Then I study the Méditations chrétiennes et métaphysiques i-iv : we see that Malebranche set his textual apparatus so that it prescribes its receiver a form of « work-on-one’s-self ». The self is here produced by the organisation of relationship between attentive vision and lighting action, and this structure is built in the self by a movement, induced by the text, which leads the self from

  15. Vécu des situations scolaires, estime de soi et Développement : du jugement moral a la période de la latence

    Directory of Open Access Journals (Sweden)

    Emile-Henri Riard

    2011-06-01

    Full Text Available Suivant une approche de psychologie sociale clinique, le point de vue adopté dans cet article est triple : 1- considérer les situations scolaires “ ordinaires ” comme potentiellement génératrices de difficultés; 2- s’inscrire en amont de l’adolescence afin d’améliorer la compréhension de cette dernière; 3 – considérer le vécu des élèves. La recherche menée en France (enfants de 6 à 11 ans, par questionnaire (48 situations relevant de la scolarité : classe, cour de récréation, trajet domicile/école et domicile ont été proposées ; test d’estime de soi (Coopersmith ; développement moral (Kohlberg. Variables : âge, sexe, mode d’habitat, position scolaire, classement, département. Les résultats (analyse de variance démontrent un fonctionnement “ en bloc ” du niveau de vécu de difficulté. Ressortent comme variables significatives, par ordre d’importance décroissante: le sexe (les garçons ressentent davantage les difficultés que les filles; l’âge (le niveau de difficulté vécue décroît avec l’âge mais concerne surtout la cour de récréation ; le mode d’habitat (collectif. La classe est l’espace le plus porteur de différences de vécu de difficultés indépendamment des variables. Le niveau d’autonomie et l’estime de soi sont schématiquement inversement proportionnés au niveau de difficulté vécu. La conclusion met l’accent sur l’importance des effets interactif et d’accumulation des situations.

  16. Gilles Pérez, Gilles Rof, Les rebelles du Foot

    OpenAIRE

    Banaré, Eddy

    2012-01-01

    Le lien entre sport et politique n’est pas nouveau en soi : les déclarations de Mohamed Ali contre la guerre du Vietnam ou le poing ganté brandi par Tommie Smith et John Carlos aux Jeux Olympiques de Mexico en 1968 sont emblématiques. En quoi le football diffère-t-il ? Qu’il y a-t-il de nouveau dans Les rebelles du foot? Le foot semble, au premier abord, plus facilement instrumentalisé par la politique : les tribunes de stades servent parfois de vitrines aux candidats, ministres ou présidents...

  17. Method to improve commercial bonded SOI material

    Science.gov (United States)

    Maris, Humphrey John; Sadana, Devendra Kumar

    2000-07-11

    A method of improving the bonding characteristics of a previously bonded silicon on insulator (SOI) structure is provided. The improvement in the bonding characteristics is achieved in the present invention by, optionally, forming an oxide cap layer on the silicon surface of the bonded SOI structure and then annealing either the uncapped or oxide capped structure in a slightly oxidizing ambient at temperatures greater than 1200.degree. C. Also provided herein is a method for detecting the bonding characteristics of previously bonded SOI structures. According to this aspect of the present invention, a pico-second laser pulse technique is employed to determine the bonding imperfections of previously bonded SOI structures.

  18. Performance analysis of SOI MOSFET with rectangular recessed channel

    Science.gov (United States)

    Singh, M.; Mishra, S.; Mohanty, S. S.; Mishra, G. P.

    2016-03-01

    In this paper a two dimensional (2D) rectangular recessed channel-silicon on insulator metal oxide semiconductor field effect transistor (RRC-SOI MOSFET), using the concept of groove between source and drain regions, which is one of the channel engineering technique to suppress the short channel effect (SCE). This suppression is mainly due to corner potential barrier of the groove and the simulation is carried out by using ATLAS 2D device simulator. To have further improvement of SCE in RRC-SOI MOSFET, three more devices are designed by using dual material gate (DMG) and gate dielectric technique, which results in formation of devices i.e. DMRRC-SOI,MLSMRRC-SOI, MLDMRRC-SOI MOSFET. The effect of different structures of RRC-SOI on AC and RF parameters are investigated and the importance of these devices over RRC MOSFET regarding short channel effect is analyzed.

  19. Performance analysis of SOI MOSFET with rectangular recessed channel

    International Nuclear Information System (INIS)

    Singh, M; Mishra, G P; Mishra, S; Mohanty, S S

    2016-01-01

    In this paper a two dimensional (2D) rectangular recessed channel–silicon on insulator metal oxide semiconductor field effect transistor (RRC-SOI MOSFET), using the concept of groove between source and drain regions, which is one of the channel engineering technique to suppress the short channel effect (SCE). This suppression is mainly due to corner potential barrier of the groove and the simulation is carried out by using ATLAS 2D device simulator. To have further improvement of SCE in RRC-SOI MOSFET, three more devices are designed by using dual material gate (DMG) and gate dielectric technique, which results in formation of devices i.e. DMRRC-SOI,MLSMRRC-SOI, MLDMRRC-SOI MOSFET. The effect of different structures of RRC-SOI on AC and RF parameters are investigated and the importance of these devices over RRC MOSFET regarding short channel effect is analyzed. (paper)

  20. BUSFET -- A radiation-hardened SOI transistor

    International Nuclear Information System (INIS)

    Schwank, J.R.; Shaneyfelt, M.R.; Draper, B.L.; Dodd, P.E.

    1999-01-01

    The total-dose hardness of SOI technology is limited by radiation-induced charge trapping in gate, field, and SOI buried oxides. Charge trapping in the buried oxide can lead to back-channel leakage and makes hardening SOI transistors more challenging than hardening bulk-silicon transistors. Two avenues for hardening the back-channel are (1) to use specially prepared SOI buried oxides that reduce the net amount of trapped positive charge or (2) to design transistors that are less sensitive to the effects of trapped charge in the buried oxide. In this work, the authors propose a partially-depleted SOI transistor structure for mitigating the effects of trapped charge in the buried oxide on radiation hardness. They call this structure the BUSFET--Body Under Source FET. The BUSFET utilizes a shallow source and a deep drain. As a result, the silicon depletion region at the back channel caused by radiation-induced charge trapping in the buried oxide does not form a conducting path between source and drain. Thus, the BUSFET structure design can significantly reduce radiation-induced back-channel leakage without using specially prepared buried oxides. Total dose hardness is achieved without degrading the intrinsic SEU or dose rate hardness of SOI technology. The effectiveness of the BUSFET structure for reducing total-dose back-channel leakage depends on several variables, including the top silicon film thickness and doping concentration, and the depth of the source. 3-D simulations show that for a body doping concentration of 10 18 cm -3 , a drain bias of 3 V, and a source depth of 90 nm, a silicon film thickness of 180 nm is sufficient to almost completely eliminate radiation-induced back-channel leakage. However, for a doping concentration of 3 x 10 17 cm -3 , a thicker silicon film (300 nm) must be used

  1. BUSFET - A Novel Radiation-Hardened SOI Transistor

    International Nuclear Information System (INIS)

    Dodd, P.E.; Draper, B.L.; Schwank, J.R.; Shaneyfelt, M.R.

    1999-01-01

    A partially-depleted SOI transistor structure has been designed that does not require the use of specially-processed hardened buried oxides for total-dose hardness and maintains the intrinsic SEU and dose rate hardness advantages of SOI technology

  2. Characterization of SOI monolithic detector system

    Science.gov (United States)

    Álvarez-Rengifo, P. L.; Soung Yee, L.; Martin, E.; Cortina, E.; Ferrer, C.

    2013-12-01

    A monolithic active pixel sensor for charged particle tracking was developed. This research is performed within the framework of an R&D project called TRAPPISTe (Tracking Particles for Physics Instrumentation in SOI Technology) whose aim is to evaluate the feasibility of developing a Monolithic Active Pixel Sensor (MAPS) with Silicon-on-Insulator (SOI) technology. Two chips were fabricated: TRAPPISTe-1 and TRAPPISTe-2. TRAPPISTe-1 was produced at the WINFAB facility at the Université catholique de Louvain (UCL), Belgium, in a 2 μm fully depleted (FD-SOI) CMOS process. TRAPPISTe-2 was fabricated with the LAPIS 0.2 μm FD-SOI CMOS process. The electrical characterization on single transistor test structures and of the electronic readout for the TRAPPISTe series of monolithic pixel detectors was carried out. The behavior of the prototypes’ electronics as a function of the back voltage was studied. Results showed that both readout circuits exhibited sensitivity to the back voltage. Despite this unwanted secondary effect, the responses of TRAPPISTe-2 amplifiers can be improved by a variation in the circuit parameters.

  3. Automotive SOI-BCD Technology Using Bonded Wafers

    International Nuclear Information System (INIS)

    Himi, H.; Fujino, S.

    2008-01-01

    The SOI-BCD device is excelling in high temperature operation and noise immunity because the integrated elements can be electrically separated by dielectric isolation. We have promptly paid attention to this feature and have concentrated to develop SOI-BCD devices seeking to match the automotive requirement. In this paper, the feature technologies specialized for automotive SOI-BCD devices, such as buried N + layer for impurity gettering and noise shielding, LDMOS with improved ESD robustness, crystal defect-less process, and wafer direct bonding through the amorphous layer for intelligent power IC are introduced.

  4. BUSFET - A Novel Radiation-Hardened SOI Transistor

    International Nuclear Information System (INIS)

    Schwank, J.R.; Shaneyfelt, M.R.; Draper, B.L.; Dodd, P.E.

    1999-01-01

    The total-dose hardness of SOI technology is limited by radiation-induced charge trapping in gate, field, and SOI buried oxides. Charge trapping in the buried oxide can lead to back-channel leakage and makes hardening SOI transistors more challenging than hardening bulk-silicon transistors. Two avenues for hardening the back-channel are (1) to use specially prepared SOI buried oxides that reduce the net amount of trapped positive charge or (2) to design transistors that are less sensitive to the effects of trapped charge in the buried oxide. In this work, we propose a new partially-depleted SOI transistor structure that we call the BUSFET--Body Under Source FET. The BUSFET utilizes a shallow source and a deep drain. As a result, the silicon depletion region at the back channel caused by radiation-induced charge trapping in the buried oxide does not form a conducting path between source and drain. Thus, the BUSFET structure design can significantly reduce radiation-induced back-channel leakage without using specially prepared buried oxides. Total dose hardness is achieved without degrading the intrinsic SEU and dose rate hardness of SOI technology. The effectiveness of the BUSFET structure for reducing total-dose back-channel leakage depends on several variables, including the top silicon film thickness and doping concentration and the depth of the source. 3-D simulations show that for a doping concentration of 10 18 cm -3 and a source depth of 90 nm, a silicon film thickness of 180 nm is sufficient to almost completely eliminate radiation-induced back-channel leakage. However, for a doping concentration of 3x10 17 cm -3 , a thicker silicon film (300 nm) must be used

  5. L'impact d'une démarche d'alignement stratégique du système d'information sur la stratégie de l'entreprise Cas de SONATRACH

    OpenAIRE

    Taieb Errahmani, Mohamed

    2014-01-01

    Le management des systèmes d'information et des technologies de l'information a apporté de nombreux concepts et pratiques, à savoir ; la gouvernance IT, la gestion stratégique des systèmes d’information… etc. Le concept d’alignement stratégique du système d'information rassemble deux axes principaux, soit ; la stratégie du système d’information et la stratégie de l'entreprise. L'objectif principal de cette étude est de mettre en évidence l'impact d’une démarche d'alignement des systèmes d'inf...

  6. Impact of technology scaling in SOI back-channel total dose tolerance. A 2-D numerical study using a self-consistent oxide code; Effet du facteur d'echelle sur la tolerance en dose de rayonnement dans le cas du courant de fuite arriere des transistors MOS/SOI. Une etude d'un oxyde utilise un code auto coherent en deux dimensions

    Energy Technology Data Exchange (ETDEWEB)

    Leray, J.L.; Paillet, Ph.; Ferlet-Cavrois, V. [CEA Bruyeres le Chatel DRIF, 91 (France); Tavernier, C.; Belhaddad, K. [ISE Integrated System Engineering AG (Switzerland); Penzin, O. [ISE Integrated System Engineering Inc., San Jose (United States)

    1999-07-01

    A new 2-D and 3-D self-consistent code has been developed and is applied to understanding the charge trapping in SOI buried oxide causing back-channel MOS leakage in SOI transistors. Clear indications on scaling trends are obtained with respect to supply voltage and oxide thickness. (authors)

  7. Electronics and Sensor Study with the OKI SOI process

    CERN Document Server

    Arai, Yasuo

    2007-01-01

    While the SOI (Silicon-On-Insulator) device concept is very old, commercialization of the technology is relatively new and growing rapidly in high-speed processor and lowpower applications. Furthermore, features such as latch-up immunity, radiation hardness and high-temperature operation are very attractive in high energy and space applications. Once high-quality bonded SOI wafers became available in the late 90s, it opened up the possibility to get two different kinds of Si on a single wafer. This makes it possible to realize an ideal pixel detector; pairing a fully-depleted radiation sensor with CMOS circuitry in an industrial technology. In 2005 we started Si pixel R&D with OKI Electric Ind. Co., Ltd. which is the first market supplier of Fully-Depleted SOI products. We have developed processes for p+/n+ implants to the substrate and for making connections between the implants and circuits in the OKI 0.15μm FD-SOI CMOS process. We have preformed two Multi Project Wafer (MPW) runs using this SOI proces...

  8. Ultrabroadband Hybrid III-V/SOI Grating Reflector for On-chip Lasers

    DEFF Research Database (Denmark)

    Park, Gyeong Cheol; Taghizadeh, Alireza; Chung, Il-Sug

    2016-01-01

    We report on a new type of III-V/SOI grating reflector with a broad stopband of 350 nm. This reflector has promising prospects for applications in high-speed III-V/SOI vertical cavity lasers with an improved heat dissipation capability.......We report on a new type of III-V/SOI grating reflector with a broad stopband of 350 nm. This reflector has promising prospects for applications in high-speed III-V/SOI vertical cavity lasers with an improved heat dissipation capability....

  9. Monolithic integration of SOI waveguide photodetectors and transimpedance amplifiers

    Science.gov (United States)

    Li, Shuxia; Tarr, N. Garry; Ye, Winnie N.

    2018-02-01

    In the absence of commercial foundry technologies offering silicon-on-insulator (SOI) photonics combined with Complementary Metal Oxide Semiconductor (CMOS) transistors, monolithic integration of conventional electronics with SOI photonics is difficult. Here we explore the implementation of lateral bipolar junction transistors (LBJTs) and Junction Field Effect Transistors (JFETs) in a commercial SOI photonics technology lacking MOS devices but offering a variety of n- and p-type ion implants intended to provide waveguide modulators and photodetectors. The fabrication makes use of the commercial Institute of Microelectronics (IME) SOI photonics technology. Based on knowledge of device doping and geometry, simple compact LBJT and JFET device models are developed. These models are then used to design basic transimpedance amplifiers integrated with optical waveguides. The devices' experimental current-voltage characteristics results are reported.

  10. Investigation of veritcal graded channel doping in nanoscale fully-depleted SOI-MOSFET

    Science.gov (United States)

    Ramezani, Zeinab; Orouji, Ali A.

    2016-10-01

    For achieving reliable transistor, we investigate an amended channel doping (ACD) engineering which improves the electrical and thermal performances of fully-depleted silicon-on-insulator (SOI) MOSFET. We have called the proposed structure with the amended channel doping engineering as ACD-SOI structure and compared it with a conventional fully-depleted SOI MOSFET (C-SOI) with uniform doping distribution using 2-D ATLAS simulator. The amended channel doping is a vertical graded doping that is distributed from the surface of structure with high doping density to the bottom of channel, near the buried oxide, with low doping density. Short channel effects (SCEs) and leakage current suppress due to high barrier height near the source region and electric field modification in the ACD-SOI in comparison with the C-SOI structure. Furthermore, by lower electric field and electron temperature near the drain region that is the place of hot carrier generation, we except the improvement of reliability and gate induced drain lowering (GIDL) in the proposed structure. Undesirable Self heating effect (SHE) that become a critical challenge for SOI MOSFETs is alleviated in the ACD-SOI structure because of utilizing low doping density near the buried oxide. Thus, refer to accessible results, the ACD-SOI structure with graded distribution in vertical direction is a reliable device especially in low power and high temperature applications.

  11. Les effets bénéfiques de l'accompagnement du patient cancéreux: particularités du Maroc

    Science.gov (United States)

    Lkhoyaali, Sihame; Aitelhaj, Meryem; Errihani, Hassan

    2014-01-01

    Au Maroc la majorité des patients âgés cancéreux sont pris en charge par leurs proches l'accompagnement des patients est à l'origine de conséquences émotionnelles psychiques et financières négatives mais en contrepartie il est à l'origine de plusieurs effets bénéfiques à savoir un resserrement des liens familiaux, une surestime du soi et il est la source d'un bien-être affectif et spirituel qui permet de faire face à la maladie. PMID:25722766

  12. Croire en soi, croire en l'autre

    Directory of Open Access Journals (Sweden)

    Eugène Enriquez

    2014-04-01

    Full Text Available La croyance aux Dieux ou en un Dieu unique c'est-à-dire à l'incroyable est fort répandue et semble normale comme avoir confiance en soi et en l'autre. Mais croire en soi et en l'autre apparaît étonnant car ce serait se mettre sur le même rang que Dieu. Effectivement l'homme essaie de ressembler à Dieu. Mais à Dieu blessé, faillible, s'interrogeant constamment. Ce Dieu nouveau est un "sujet amoureux" amoureux de soi, de l'autre et de la vie. Il se conduit comme un "Dichter" assumant une responsabilité morale. Il est difficile, voire souvent impossible de se situer comme un "Dichter". C'est pourtant la tâche à laquelle l'homme contemporain est confronté.

  13. L’éthique narrative selon Paul Ricoeur : une passerelle entre l’éthique spinoziste et les éthiques du care

    Directory of Open Access Journals (Sweden)

    Éric Delassus

    2015-09-01

    Full Text Available Selon Fabienne Brugère, un point de rencontre existe entre l’éthique spinoziste et les éthiques du care, le care pouvant être envisagé comme une réactualisation du conatus spinoziste. Cet article vise à démontrer que cette convergence peut s’établir à partir d’une éthique narrative inspirée de la pensée de Paul Ricoeur. Cela concerne principalement la perception que l’on peut avoir de soi en tant que corps et esprit, dans la mesure où l’esprit est défini par Baruch Spinoza comme « idée du corps ». L’éthique spinoziste invite à se rendre utile aux autres pour augmenter notre puissance d’être et nous libérer d’une servitude qui n’est pas sans rapport avec la vulnérabilité telle que définie dans les éthiques du care. L’humain.e vulnérable a besoin pour se sentir exister d’avoir une idée cohérente de son corps, et le récit est l’une des voies lui permettant de progresser dans cette direction. Encore faut-il, pour y parvenir, trouver des pourvoyeuses et pourvoyeurs de care disposé.e.s à écouter, aptes à susciter en soi le désir de se raconter.

  14. Characterizing SOI Wafers By Use Of AOTF-PHI

    Science.gov (United States)

    Cheng, Li-Jen; Li, Guann-Pyng; Zang, Deyu

    1995-01-01

    Developmental nondestructive method of characterizing layers of silicon-on-insulator (SOI) wafer involves combination of polarimetric hyperspectral imaging by use of acousto-optical tunable filters (AOTF-PHI) and computational resources for extracting pertinent data on SOI wafers from polarimetric hyperspectral images. Offers high spectral resolution and both ease and rapidity of optical-wavelength tuning. Further efforts to implement all of processing of polarimetric spectral image data in special-purpose hardware for sake of procesing speed. Enables characterization of SOI wafers in real time for online monitoring and adjustment of production. Also accelerates application of AOTF-PHI to other applications in which need for high-resolution spectral imaging, both with and without polarimetry.

  15. Le rêve entendu par les chrétiens de la Communauté Évangélique du Congo

    OpenAIRE

    MANSIANTIMA MIANKENDA , Alain-Fidèle

    2015-01-01

    International audience; Pour Sigmund FREUD, le rêve est une source de connaissance de soi. C'est la « voie royale » de la connaissance de l'inconscient. Selon lui, le sommeil est un état où le dormeur ne veut rien savoir du monde extérieur. Le rêve est donc le gardien du sommeil, c'est lui qui nous permet de rester endormis puisqu'en réalisant les désirs, il supprime le psychisme de ses excitations. Les fidèles de la Communauté Evangélique du Congo, en particulier ceux de la Paroisse de N'dji...

  16. La flexion politique du respect: Une lecture foucaldienne de « Des mobiles de la raison pure pratique » (KPV, AA 05 : 71

    Directory of Open Access Journals (Sweden)

    Michèle Cohen-Halimi

    2014-11-01

    Full Text Available Dans la Critique de la raison pratique (dans « Des mobiles de la raison pure pratique », Kant entreprend une « archéologie » du Soi moral. Cette archéologie peut s’entendre conformément à la définition de Foucault : ne remontant vers aucune origine, comparant des faits de raison, oeuvrant sur un plan d’immanence strictement rationnel, Kant archéologue livre l’idée d’une « histoire de ce qui rend nécessaire une certaine forme de pensée ». Il s’agit de reconstruire les événementialités rationnelles qui séparent et articulent différentes conditions de possibilités d’émergence du Soi moral. Et ces événementialités, portées au jour dans l’écart du présent au passé, dessinent l’horizon d’un possible politique, celui d’une articulation forte entre morale et politique, telle que le « politique moral » déjà l’annonce. Cet article est le premier jalon d’un travail en cours.

  17. VCSELs and silicon light sources exploiting SOI grating mirrors

    DEFF Research Database (Denmark)

    Chung, Il-Sug; Mørk, Jesper

    2012-01-01

    In this talk, novel vertical-cavity laser structure consisting of a dielectric Bragg reflector, a III-V active region, and a high-index-contrast grating made in the Si layer of a silicon-on-insulator (SOI) wafer will be presented. In the Si light source version of this laser structure, the SOI...... the Bragg reflector. Numerical simulations show that both the silicon light source and the VCSEL exploiting SOI grating mirrors have superior performances, compared to existing silicon light sources and long wavelength VCSELs. These devices are highly adequate for chip-level optical interconnects as well...

  18. Masculinité et paternité à l’écart du monde du travail : le cas des pères au foyer en Belgique Masculinity and Paternity outside the Working World : the Case of Stay-at-home Fathers in Belgium

    Directory of Open Access Journals (Sweden)

    Laura Merla

    2011-03-01

    Full Text Available Cet article, rédigé à partir d’une recherche doctorale portant sur 21 pères au foyer, s’intéresse à la difficulté qu’il y a pour un homme de gérer une image positive de soi qui se détache de la référence au travail professionnel, et ce à la fois vis-à-vis de soi-même et dans les relations à autrui. Nous mettrons en lumière la subsistance des normes de la division sexuelle du travail qui transparaît au niveau des interactions avec autrui dans et en dehors du contexte domestique ; nous examinerons également les stratégies que les pères au foyer mettent en place pour réduire la portée identitaire et relationnelle du manque de légitimité auquel ils sont confrontés. Nous mettrons en particulier l’accent sur le rôle joué par la référence au travail professionnel à la fois dans la définition de soi “pour soi” et dans la présentation de soi à autrui. En conclusion, une définition originale de l’identité de genre sera proposée.Written on the basis of doctoral research on 21 stay-at-home fathers, this article focuses on men's difficulties in managing a positive self-image that prescinds from reference to professional work roles, both vis-à-vis themselves and in relation to others. We will shed light on the persistence of norms on the sexual division of labour which show through on the level of interactions with others in and outside of the domestic context ; we will also examine the strategies that stay-at-home fathers employ in reducing the identitary and relational import of the lack of legitimacy they are confronted with. We shall place particular accent on the role played by reference to professional work, both in defining self “for self” and in the presentation of self to others. In conclusion, an original definition of gender identity will be proposed.

  19. Hybrid III-V/SOI Resonant Cavity Photodetector

    DEFF Research Database (Denmark)

    Learkthanakhachon, Supannee; Taghizadeh, Alireza; Park, Gyeong Cheol

    2016-01-01

    A hybrid III-V/SOI resonant cavity photo detector has been demonstrated, which comprises an InP grating reflectorand a Si grating reflector. It can selectively detects an incident light with 1.54-µm wavelength and TM polarization.......A hybrid III-V/SOI resonant cavity photo detector has been demonstrated, which comprises an InP grating reflectorand a Si grating reflector. It can selectively detects an incident light with 1.54-µm wavelength and TM polarization....

  20. Scaling limits and reliability of SOI CMOS technology

    International Nuclear Information System (INIS)

    Ioannou, D E

    2005-01-01

    As bulk and PD-SOI CMOS approach their scaling limit (at gate length of around 50 nm), there is a renewed interest on FD-SOI because of its potential for continued scalability beyond this limit. In this review the performance and reliability of extremely scaled FD transistors are discussed and an attempt is made to identify critical areas for further research. (invited paper)

  1. FinFET and UTBB for RF SOI communication systems

    Science.gov (United States)

    Raskin, Jean-Pierre

    2016-11-01

    Performance of RF integrated circuit (IC) is directly linked to the analog and high frequency characteristics of the transistors, the quality of the back-end of line process as well as the electromagnetic properties of the substrate. Thanks to the introduction of the trap-rich high-resistivity Silicon-on-Insulator (SOI) substrate on the market, the ICs requirements in term of linearity are fulfilled. Today partially depleted SOI MOSFET is the mainstream technology for RF SOI systems. Future generations of mobile communication systems will require transistors with better high frequency performance at lower power consumption. The advanced MOS transistors in competition are FinFET and Ultra Thin Body and Buried oxide (UTBB) SOI MOSFETs. Both devices have been intensively studied these last years. Most of the reported data concern their digital performance. In this paper, their analog/RF behavior is described and compared. Both show similar characteristics in terms of transconductance, Early voltage, voltage gain, self-heating issue but UTBB outperforms FinFET in terms of cutoff frequencies thanks to their relatively lower fringing parasitic capacitances.

  2. A novel nanoscale SOI MOSFET by embedding undoped region for improving self-heating effect

    Science.gov (United States)

    Ghaffari, Majid; Orouji, Ali A.

    2018-06-01

    Because of the low thermal conductivity of the SiO2 (oxide), the Buried Oxide (BOX) layer in a Silicon-On-Insulator Metal-Oxide Semiconductor Field-Effect Transistor (SOI MOSFET) prevents heat dissipation in the silicon layer and causes increase in the device lattice temperature. In this paper, a new technique is proposed for reducing Self-Heating Effects (SHEs). The key idea in the proposed structure is using a Silicon undoped Region (SR) in the nanoscale SOI MOSFET under the drain and channel regions in order to decrease the SHE. The novel transistor is named Silicon undoped Region SOI-MOSFET (SR-SOI). Due to the embedded silicon undoped region in the suitable place, the proposed structure has decreased the device lattice temperature. The location and dimensions of the proposed region have been carefully optimized to achieve the best results. This work has explored enhancement such as decreased maximum lattice temperature, increased electron mobility, increased drain current, lower DC drain conductance and higher DC transconductance and also decreased bandgap energy variations. Also, for modeling of the structure in the SPICE tools, the main characterizations have been extracted such as thermal resistance (RTH), thermal capacitance (CTH), and SHE characteristic frequency (fTH). All parameters are extracted in relation with the AC operation indicate excellent performance of the SR-SOI device. The results show that proposed region is a suitable alternative to oxide as a part of the buried oxide layer in SOI structures and has better performance in high temperature. Using two-dimensional (2-D) and two-carrier device simulation is done comparison of the SR-SOI structure with a Conventional SOI (C-SOI). As a result, the SR-SOI device can be regarded as a useful substitution for the C-SOI device in nanoscale integrated circuits as a reliable device.

  3. Technology development for SOI monolithic pixel detectors

    International Nuclear Information System (INIS)

    Marczewski, J.; Domanski, K.; Grabiec, P.; Grodner, M.; Jaroszewicz, B.; Kociubinski, A.; Kucharski, K.; Tomaszewski, D.; Caccia, M.; Kucewicz, W.; Niemiec, H.

    2006-01-01

    A monolithic detector of ionizing radiation has been manufactured using silicon on insulator (SOI) wafers with a high-resistivity substrate. In our paper the integration of a standard 3 μm CMOS technology, originally designed for bulk devices, with fabrication of pixels in the bottom wafer of a SOI substrate is described. Both technological sequences have been merged minimizing thermal budget and providing suitable properties of all the technological layers. The achieved performance proves that fully depleted monolithic active pixel matrix might be a viable option for a wide spectrum of future applications

  4. Worst-Case Bias During Total Dose Irradiation of SOI Transistors

    International Nuclear Information System (INIS)

    Ferlet-Cavrois, V.; Colladant, T.; Paillet, P.; Leray, J.-L; Musseau, O.; Schwank, James R.; Shaneyfelt, Marty R.; Pelloie, J.L.; Du Port de Poncharra, J.

    2000-01-01

    The worst case bias during total dose irradiation of partially depleted SOI transistors (from SNL and from CEA/LETI) is correlated to the device architecture. Experiments and simulations are used to analyze SOI back transistor threshold voltage shift and charge trapping in the buried oxide

  5. Monolithic integration of micromachined sensors and CMOS circuits based on SOI technologies

    International Nuclear Information System (INIS)

    Yu Xiaomei; Tang Yaquan; Zhang Haitao

    2008-01-01

    This note presents a novel way to monolithically integrate micro-cantilever sensors and signal conditioning circuits by combining SOI CMOS and SOI micromachining technologies. In order to improve the sensor performance and reduce the system volume, an integrated sensor system composed of a piezoresistive cantilever array, a temperature-compensation current reference, a digitally controlled multiplexer and an instrument amplifier is designed and finally fabricated. A post-SOI CMOS process is developed to realize the integrated sensor system which is based on a standard CMOS process with one more mask to define the cantilever structure at the end of the process. Measurements on the finished SOI CMOS devices and circuits show that the integration process has good compatibility both for the cantilever sensors and for the CMOS circuits, and the SOI CMOS integration process can decrease about 25% sequences compared with the bulk silicon CMOS process. (note)

  6. The Bridges SOI Model School Program at Palo Verde School, Palo Verde, Arizona.

    Science.gov (United States)

    Stock, William A.; DiSalvo, Pamela M.

    The Bridges SOI Model School Program is an educational service based upon the SOI (Structure of Intellect) Model School curriculum. For the middle seven months of the academic year, all students in the program complete brief daily exercises that develop specific cognitive skills delineated in the SOI model. Additionally, intensive individual…

  7. Deep sub-micron FD-SOI for front-end application

    International Nuclear Information System (INIS)

    Ikeda, H.; Arai, Y.; Hara, K.; Hayakawa, H.; Hirose, K.; Ikegami, Y.; Ishino, H.; Kasaba, Y.; Kawasaki, T.; Kohriki, T.; Martin, E.; Miyake, H.; Mochizuki, A.; Tajima, H.; Tajima, O.; Takahashi, T.; Takashima, T.; Terada, S.; Tomita, H.; Tsuboyama, T.

    2007-01-01

    In order to confirm benefits of a deep sub-micron FD-SOI and to identify possible issues concerning front-end circuits with the FD-SOI, we have submitted a small design to Oki Electric Industry Co., Ltd. via the multi-chip project service of VDEC, the University of Tokyo. The initial test results and future plans for development are presented

  8. Micromachined thin-film sensors for SOI-CMOS co-integration

    CERN Document Server

    Laconte, Jean; Raskin, Jean-Pierre

    2006-01-01

    Co-integration of MEMS and MOS in SOI technology is promising and well demonstrated hereThe impact of Micromachining on SOI devices is deeply analyzed for the first timeInclude extensive TMAH etching, residual stress, microheaters, gas-flow sensors reviewResidual stresses in thin films need to be more and more monitored in MEMS designsTMAH micromachining is an attractive alternative to KOH.

  9. Regionally Aligned Divisions: Enabling Cultural and Linguistic Competency in Regionally Aligned Forces

    Science.gov (United States)

    2016-05-26

    HQDA) Regionally Aligned Forces (RAF) EXORD, 56. 8 George Siemens, “Connectivism: A Learning Theory for the Digital Age,” International Journal of...J. Clauzel, “Évolution de la vie économique et des structures sociales du pays nomade du Malil: De la conquête française à l’autonomie interne 1893...121 Donald E. Vandergriff, Digital War: A View from the Front Line, ed. Robert L. Bateman (Novato: Presidio Press, 1999). 122 Douglas M. Chalmers

  10. Blog : un journal intime comme mémoire de soi

    Directory of Open Access Journals (Sweden)

    Nolwenn Hénaff

    2011-08-01

    Full Text Available Tenir un journal est devenu, pour un individu, une manière possible de vivre, ou d’accompagner un moment de sa vie (Lejeune, 2006. Les usages sont donc multiples : construction d’une identité narrative, fixation du temps, libération du moi, introspection, outil de contrôle, de soutien, méthode d’organisation de la pensée, plaisir d’écrire. Si l’écriture papier reste la forme la plus courante du récit biographique, d’autres supports médiatiques comme la télévision ou la radio sont venus offrir de nouveaux terrains d’expérimentation de ces récits de soi. Plus récemment, l’avènement d’Internet et de ses outils simplifiés de publication ont fait émerger des formes biographiques innovantes. Pourtant, qu’il s’agisse de traverser une crise, de garder la mémoire d’une expérience forte, ou, plus ordinairement, de relater ses vacances et ses voyages, le journal se positionne avant tout, et résolument, comme un espace de liberté : on écrit quand on veut, comme on veut. Le « Souci de soi » comme dirait Foucault, l’espace dominé par les sensations, et la temporalité marquée par la notion d’instants, de moments ayant une connotation expressément personnelle sont autant d’indices révélant la pratique de l’écriture intime en ligne. Le blog apparaît à des moments de vie et accompagne souvent des tournants biographiques (ruptures, questionnement mais aussi nouveaux apprentissages, nouvelles rencontres, etc.. Nous proposons dans cet article d’analyser le blog en tant que support de mémoire personnelle et d’étudier à travers des exemples concrets les stratégies développées par les blogueurs pour se créer via ce dispositif communicationnel innovant un « espace de conserverie de soi » en ligne.Keeping a journal has become a way of live, or to moment a moment in one’s life (Lejeune, 2006. It has multiple uses: construction of a narrative identity, marking time, liberating the

  11. First results of a Double-SOI pixel chip for X-ray imaging

    Energy Technology Data Exchange (ETDEWEB)

    Lu, Yunpeng, E-mail: yplu@ihep.ac.cn [State Key Laboratory of Particle Detection and Electronics (Institute of High Energy Physics, CAS), Beijing 100049 (China); Ouyang, Qun [State Key Laboratory of Particle Detection and Electronics (Institute of High Energy Physics, CAS), Beijing 100049 (China); Arai, Yasuo [Institute of Particle and Nuclear Studies, High Energy Accelerator Research Org., KEK, Tsukuba 305-0801 (Japan); Liu, Yi; Wu, Zhigang; Zhou, Yang [State Key Laboratory of Particle Detection and Electronics (Institute of High Energy Physics, CAS), Beijing 100049 (China)

    2016-09-21

    Aiming at low energy X-ray imaging, a prototype chip based on Double-SOI process was designed and tested. The sensor and pixel circuit were characterized. The long lasting crosstalk issue in SOI technology was understood. The operation of pixel was verified with a pulsed infrared laser beam. The depletion of sensor revealed by signal amplitudes is consistent with the one revealed by I–V curve. An s-curve fitting resulted in a sigma of 153 e{sup −} among which equivalent noise charge (ENC) contributed 113 e{sup −}. It's the first time that the crosstalk issue in SOI technology was solved and a counting type SOI pixel demonstrated the detection of low energy radiation quantitatively.

  12. SOI technology for power management in automotive and industrial applications

    Science.gov (United States)

    Stork, Johannes M. C.; Hosey, George P.

    2017-02-01

    Semiconductor on Insulator (SOI) technology offers an assortment of opportunities for chip manufacturers in the Power Management market. Recent advances in the automotive and industrial markets, along with emerging features, the increasing use of sensors, and the ever-expanding "Internet of Things" (IoT) are providing for continued growth in these markets while also driving more complex solutions. The potential benefits of SOI include the ability to place both high-voltage and low-voltage devices on a single chip, saving space and cost, simplifying designs and models, and improving performance, thereby cutting development costs and improving time to market. SOI also offers novel new approaches to long-standing technologies.

  13. A Monolithic Active Pixel Sensor for ionizing radiation using a 180 nm HV-SOI process

    Energy Technology Data Exchange (ETDEWEB)

    Hemperek, Tomasz, E-mail: hemperek@uni-bonn.de; Kishishita, Tetsuichi; Krüger, Hans; Wermes, Norbert

    2015-10-01

    An improved SOI-MAPS (Silicon On Insulator Monolithic Active Pixel Sensor) for ionizing radiation based on thick-film High Voltage SOI technology (HV-SOI) has been developed. Similar to existing Fully Depleted SOI-based (FD-SOI) MAPS, a buried silicon oxide inter-dielectric (BOX) layer is used to separate the CMOS electronics from the handle wafer which is used as a depleted charge collection layer. FD-SOI MAPS suffers from radiation damage such as transistor threshold voltage shifts due to charge traps in the oxide layers and charge states created at the silicon oxide boundaries (back gate effect). The X-FAB 180-nm HV-SOI technology offers an additional isolation by deep non-depleted implant between the BOX layer and the active circuitry which mitigates this problem. Therefore we see in this technology a high potential to implement radiation-tolerant MAPS with fast charge collection property. The design and measurement results from a first prototype are presented including charge collection in neutron irradiated samples.

  14. Second Harmonic Generation characterization of SOI wafers: Impact of layer thickness and interface electric field

    Science.gov (United States)

    Damianos, D.; Vitrant, G.; Lei, M.; Changala, J.; Kaminski-Cachopo, A.; Blanc-Pelissier, D.; Cristoloveanu, S.; Ionica, I.

    2018-05-01

    In this work, we investigate Second Harmonic Generation (SHG) as a non-destructive characterization method for Silicon-On-Insulator (SOI) materials. For thick SOI stacks, the SHG signal is related to the thickness variations of the different layers. However, in thin SOI films, the comparison between measurements and optical modeling suggests a supplementary SHG contribution attributed to the electric fields at the SiO2/Si interfaces. The impact of the electric field at each interface of the SOI on the SHG is assessed. The SHG technique can be used to evaluate interfacial electric fields and consequently interface charge density in SOI materials.

  15. An SEU resistant 256K SOI SRAM

    Science.gov (United States)

    Hite, L. R.; Lu, H.; Houston, T. W.; Hurta, D. S.; Bailey, W. E.

    1992-12-01

    A novel SEU (single event upset) resistant SRAM (static random access memory) cell has been implemented in a 256K SOI (silicon on insulator) SRAM that has attractive performance characteristics over the military temperature range of -55 to +125 C. These include worst-case access time of 40 ns with an active power of only 150 mW at 25 MHz, and a worst-case minimum WRITE pulse width of 20 ns. Measured SEU performance gives an Adams 10 percent worst-case error rate of 3.4 x 10 exp -11 errors/bit-day using the CRUP code with a conservative first-upset LET threshold. Modeling does show that higher bipolar gain than that measured on a sample from the SRAM lot would produce a lower error rate. Measurements show the worst-case supply voltage for SEU to be 5.5 V. Analysis has shown this to be primarily caused by the drain voltage dependence of the beta of the SOI parasitic bipolar transistor. Based on this, SEU experiments with SOI devices should include measurements as a function of supply voltage, rather than the traditional 4.5 V, to determine the worst-case condition.

  16. A monolithic active pixel sensor for ionizing radiation using a 180 nm HV-SOI process

    Energy Technology Data Exchange (ETDEWEB)

    Hemperek, Tomasz; Kishishita, Tetsuichi; Krueger, Hans; Wermes, Norbert [Institute of Physics, University of Bonn, Bonn (Germany)

    2016-07-01

    An improved SOI-MAPS (Silicon On Insulator Monolithic Active Pixel Sensor) for ionizing radiation based on thick-180 nm High Voltage SOI technology (HV-SOI) has been developed. Similar to existing Fully Depleted SOI-based (FD-SOI) MAPS, a buried silicon oxide inter-dielectric (BOX) layer is used to separate the CMOS electronics from the handle wafer which is used as a depleted charge collection layer. Standard FD-SOI MAPS suffer from radiation damage such as transistor threshold voltage shifts due to trapped charge in the buried oxide layer and charged interface states created at the silicon oxide boundaries (back gate effect). The X-FAB 180 nm HV-SOI technology offers an additional isolation using a deep non-depleted implant between the BOX layer and the active circuitry which mitigates this problem. Therefore we see in this technology a high potential to implement radiation-tolerant MAPS with fast charge collection. The design and measurement results from first prototypes are presented including radiation tolerance to total ionizing dose and charge collection properties of neutron irradiated samples.

  17. SOI MESFETs on high-resistivity, trap-rich substrates

    Science.gov (United States)

    Mehr, Payam; Zhang, Xiong; Lepkowski, William; Li, Chaojiang; Thornton, Trevor J.

    2018-04-01

    The DC and RF characteristics of metal-semiconductor field-effect-transistors (MESFETs) on conventional CMOS silicon-on-insulator (SOI) substrates are compared to nominally identical devices on high-resistivity, trap-rich SOI substrates. While the DC transfer characteristics are statistically identical on either substrate, the maximum available gain at GHz frequencies is enhanced by ∼2 dB when using the trap-rich substrates, with maximum operating frequencies, fmax, that are approximately 5-10% higher. The increased fmax is explained by the reduced substrate conduction at GHz frequencies using a lumped-element, small-signal model.

  18. L’écriture de soi dans l’œuvre de Jean Starobinski. Une dialectique du subjectif et de l’objectif, du singulier et de l’universel

    Directory of Open Access Journals (Sweden)

    Cynthia Biron Cohen

    2009-05-01

    Full Text Available Une lecture attentive de la rhétorique critico-philosophique de Starobinski révèle qu’il existe une subjectivité englobant une contemplation réflexive tant au niveau de son discours interprétatif que de son argumentation. Bien qu’il ne s’agisse jamais d’une écriture dans laquelle le critique se dépeint lui-même, on y retrouve les mêmes démarches, les prédilections et les convictions de Starobinski lui-même. Autrement dit, l’écriture de soi est présente dans ses réflexions tant sur les penseurs du XVIIIe que sur les écrivains du XXe siècle, voire dans une étude de l’art et la littérature du XIXe siècle ; comme si Starobinski liait inextricablement les sujets traités à son propre moi. L’écriture lui servirait donc non seulement de tremplin à la réflexion personnelle et à des commentaires critiques, mais aussi à l’édification de sa personnalité. Cependant la raison profonde qui le porte à fuir l’introspection, à exclure toute critique d’identification, fait elle aussi l’objet d’une interrogation. Ma démarche consiste à déceler les traces d’autobiographie que Starobinski a laissées dans son parcours herméneutique. M’inspirant de l’approche critique de Michel Beaujour, je me propose de cerner les analogies et les correspondances entre la pratique esthétique de Starobinski et son vécu contemporain, à travers l’articulation de son discours interprétatif et son orientation éthique. Une attention particulière est accordée aux procédés rhétoriques, fournissant un modèle structural révélateur de son mode de pensée. Mon objectif est de voir comment ses textes, tout en relevant des questions philosophiques ou esthétiques, laissent affleurer des identifications sous forme d’énoncés qui peuvent être appliquées à la personnalité et à la pensée starobinskiennes.A careful reading of Starobinski’s critical and philosophical rhetoric uncovers a subjectivity subdued with

  19. A MEMS SOI-based piezoresistive fluid flow sensor

    Science.gov (United States)

    Tian, B.; Li, H. F.; Yang, H.; Song, D. L.; Bai, X. W.; Zhao, Y. L.

    2018-02-01

    In this paper, a SOI (silicon-on-insulator)-based piezoresistive fluid flow sensor is presented; the presented flow sensor mainly consists of a nylon sensing head, stainless steel cantilever beam, SOI sensor chip, printed circuit board, half-cylinder gasket, and stainless steel shell. The working principle of the sensor and some detailed contrastive analysis about the sensor structure were introduced since the nylon sensing head and stainless steel cantilever beam have distinct influence on the sensor performance; the structure of nylon sensing head and stainless steel cantilever beam is also discussed. The SOI sensor chip was fabricated using micro-electromechanical systems technologies, such as reactive ion etching and low pressure chemical vapor deposition. The designed fluid sensor was packaged and tested; a calibration installation system was purposely designed for the sensor experiment. The testing results indicated that the output voltage of the sensor is proportional to the square of the fluid flow velocity, which is coincident with the theoretical derivation. The tested sensitivity of the sensor is 3.91 × 10-4 V ms2/kg.

  20. L’estime de soi : un cas particulier d’estime sociale ?

    OpenAIRE

    Santarelli, Matteo

    2016-01-01

    Un des traits plus originaux de la théorie intersubjective de la reconnaissance d’Axel Honneth, consiste dans la façon dont elle discute la relation entre estime sociale et estime de soi. En particulier, Honneth présente l’estime de soi comme un reflet de l’estime sociale au niveau individuel. Dans cet article, je discute cette conception, en posant la question suivante : l’estime de soi est-elle un cas particulier de l’estime sociale ? Pour ce faire, je me concentre sur deux problèmes crucia...

  1. Improved operation of graded-channel SOI nMOSFETs down to liquid helium temperature

    Science.gov (United States)

    Pavanello, Marcelo Antonio; de Souza, Michelly; Ribeiro, Thales Augusto; Martino, João Antonio; Flandre, Denis

    2016-11-01

    This paper presents the operation of Graded-Channel (GC) Silicon-On-Insulator (SOI) nMOSFETs at low temperatures down to liquid helium temperature in comparison to standard uniformly doped transistors. Devices from two different technologies have been measured and show that the mobility increase rate with temperature for GC SOI transistors is similar to uniformly doped devices for temperatures down to 90 K. However, at liquid helium temperature the rate of mobility increase is larger in GC SOI than in standard devices because of the different mobility scattering mechanisms. The analog properties of GC SOI devices have been investigated down to 4.16 K and show that because of its better transconductance and output conductance, an intrinsic voltage gain improvement with temperature is also obtained for devices in the whole studied temperature range. GC devices are also capable of reducing the impact ionization due to the high electric field in the drain region, increasing the drain breakdown voltage of fully-depleted SOI MOSFETs at any studied temperature and the kink voltage at 4.16 K.

  2. Single-Event Upset and Scaling Trends in New Generation of the Commercial SOI PowerPC Microprocessors

    Science.gov (United States)

    Irom, Farokh; Farmanesh, Farhad; Kouba, Coy K.

    2006-01-01

    Single-event upset effects from heavy ions are measured for Motorola silicon-on-insulator (SOI) microprocessor with 90 nm feature sizes. The results are compared with previous results for SOI microprocessors with feature sizes of 130 and 180 nm. The cross section of the 90 nm SOI processors is smaller than results for 130 and 180 nm counterparts, but the threshold is about the same. The scaling of the cross section with reduction of feature size and core voltage for SOI microprocessors is discussed.

  3. Output-Conductance Transition-Free Method for Improving Radio-Frequency Linearity of SOI MOSFET Circuits

    Directory of Open Access Journals (Sweden)

    A. Daghighi

    2013-09-01

    Full Text Available In this article, a novel concept is introduced to improve the radio frequency (RF linearity of partially-depleted (PD silicon-on-insulator (SOI MOSFET circuits. The transition due to the non-zero body resistance (RBody in output conductance of PD SOI devices leads to linearity degradation. A relation for RBody is defined to eliminate the transition and a method to obtain transition-free circuit is shown. 3-D Simulations of various body-contacted devices are carried out to extract the transition-free body resistances. To identify the output conductance transition-free concept and its application to RF circuits, a 2.4 GHz low noise amplifier (LNA is analyzed. Mixed mode device-circuit analysis is carried out to simultaneously solve device transport equations and circuit spice models. FFT calculations are performed on the output signal to compute harmonic distortion figures. Comparing the conventional body-contacted and transition-free SOI LNAs, third harmonic distortion (HD3 and total harmonic distortion (THD are improved by 16% and 24%, respectively. Two-tone test is used to analyze third order intermodulation distortions. OIP3 is improved in transition-free SOI LNA by 17% comparing with the conventional body-contacted SOI LNA. These results show the possibility of application of transition-free design concept to improve linearity of RF SOI MOSFET circuits.

  4. Silicon on insulator self-aligned transistors

    Science.gov (United States)

    McCarthy, Anthony M.

    2003-11-18

    A method for fabricating thin-film single-crystal silicon-on-insulator (SOI) self-aligned transistors. Standard processing of silicon substrates is used to fabricate the transistors. Physical spaces, between the source and gate, and the drain and gate, introduced by etching the polysilicon gate material, are used to provide connecting implants (bridges) which allow the transistor to perform normally. After completion of the silicon substrate processing, the silicon wafer is bonded to an insulator (glass) substrate, and the silicon substrate is removed leaving the transistors on the insulator (glass) substrate. Transistors fabricated by this method may be utilized, for example, in flat panel displays, etc.

  5. Sub-50 nm gate length SOI transistor development for high performance microprocessors

    International Nuclear Information System (INIS)

    Horstmann, M.; Greenlaw, D.; Feudel, Th.; Wei, A.; Frohberg, K.; Burbach, G.; Gerhardt, M.; Lenski, M.; Stephan, R.; Wieczorek, K.; Schaller, M.; Hohage, J.; Ruelke, H.; Klais, J.; Huebler, P.; Luning, S.; Bentum, R. van; Grasshoff, G.; Schwan, C.; Cheek, J.; Buller, J.; Krishnan, S.; Raab, M.; Kepler, N.

    2004-01-01

    Partial depleted (PD) SOI technologies have reached maturity for production of high speed, low power microprocessors. The paper will highlight several challenges found during the course of development for bringing 40 nm gate length (L GATE ) PD SOI transistors into volume manufacturing for high-speed microprocessors. The key innovations developed for this transistor in order to overcome classical gate oxide and L GATE scaling is an unique differential triple spacer structure, stressed overlayer films inducing strain in the Silicon channel and optimized junctions. This transistor structure yields an outstanding ring oscillator speed with an unloaded inverter delay of 5.5 ps. The found improvements are highly manufacturable and scaleable for future device technologies like FD SOI

  6. A high voltage SOI pLDMOS with a partial interface equipotential floating buried layer

    International Nuclear Information System (INIS)

    Wu Lijuan; Zhang Wentong; Zhang Bo; Li Zhaoji

    2013-01-01

    A novel silicon-on-insulator (SOI) high-voltage pLDMOS is presented with a partial interface equipotential floating buried layer (FBL) and its analytical model is analyzed in this paper. The surface heavily doped p-top layers, interface floating buried N + /P + layers, and three-step field plates are designed carefully in the FBL SOI pLDMOS to optimize the electric field distribution of the drift region and reduce the specific resistance. On the condition of ESIMOX (epoxy separated by implanted oxygen), it has been shown that the breakdown voltage of the FBL SOI pLDMOS is increased from −232 V of the conventional SOI to −425 V and the specific resistance R on,sp is reduced from 0.88 to 0.2424 Ω·cm 2 . (semiconductor devices)

  7. SOI MESFETs for Extreme Environment Electronics, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — We are proposing a new extreme environment electronics (EEE) technology based on silicon-on-insulator (SOI) metal-semiconductor field-effect transistors (MESFETs)....

  8. Bases en technique du vide

    CERN Document Server

    Rommel, Guy

    2017-01-01

    Cette seconde édition, 20 ans après la première, devrait continuer à aider les techniciens pour la réalisation de leur système de vide. La technologie du vide est utilisée, à présent, dans de nombreux domaines très différents les uns des autres et avec des matériels très fiables. Or, elle est souvent bien peu étudiée, de plus, c'est une discipline où le savoir-faire prend tout son sens. Malheureusement la transmission par des ingénieurs et techniciens expérimentés ne se fait plus ou trop rapidement. La technologie du vide fait appel à la physique, à la chimie, à la mécanique, à la métallurgie, au dessin industriel, à l'électronique, à la thermique, etc. Cette discipline demande donc de maîtriser des techniques de domaines très divers, et ce n'est pas chose facile. Chaque installation est en soi un cas particulier avec ses besoins, sa façon de traiter les matériaux et celle d'utiliser les matériels. Les systèmes de vide sont parfois copiés d'un laboratoire à un autre et le...

  9. Factors Influencing Self-Regulation in E-learning 2.0: Confirmatory Factor Model | Facteurs qui influencent la maîtrise de soi en cyberapprentissage 2.0 : modèle de facteur confirmative

    Directory of Open Access Journals (Sweden)

    Hong Zhao

    2016-04-01

    éterminants environnementaux jouent un rôle clé pour modeler la maîtrise de soi dans le processus d’apprentissage. Cet article rapporte une étude sur les influences de l’environnement de cyberapprentissage 2.0 sur la maîtrise de soi. L’étude a cerné les facteurs qui, dans un tel environnement, influencent la maîtrise de soi et déterminent les relations entre les facteurs et la maîtrise de soi. Un modèle théorique de catégorisation des facteurs de réussite pour l’apprentissage autogéré a été proposé pour ce type d’environnement. Un questionnaire a été conçu selon ce modèle et plus de deux cent cinquante élèves en téléapprentissage à Beijing et à Hong Kong y ont répondu. À l’aide d’une technique de modélisation par équation structurelle, les relations entre les facteurs environnementaux et l’autogestion ont été analysées. Les résultats statistiques ont démontré que plusieurs facteurs affectent l’autogestion dans l’environnement de cyberapprentissage 2.0. Ceux-ci comprennent la qualité du système, la qualité de l’information, la qualité du service et la satisfaction de l’usager.

  10. Electrical characterization of thin SOI wafers using lateral MOS transient capacitance measurements

    International Nuclear Information System (INIS)

    Wang, D.; Ueda, A.; Takada, H.; Nakashima, H.

    2006-01-01

    A novel electrical evaluation method was proposed for crystal quality characterization of thin Si on insulator (SOI) wafers, which was done by measurement of minority carrier generation lifetime (τ g ) using transient capacitance method for lateral metal-oxide-semiconductor (MOS) capacitor. The lateral MOS capacitors were fabricated on three kinds of thin SOI wafers. The crystal quality difference among these three wafers was clearly shown by the τ g measurement results and discussed from a viewpoint of SOI fabrication. The series resistance influence on the capacitance measurement for this lateral MOS capacitor was discussed in detail. The validity of this method was confirmed by comparing the intensities of photoluminescence signals due to electron-hole droplet in the band-edge emission

  11. Simulation of dual-gate SOI MOSFET with different dielectric layers

    Science.gov (United States)

    Yadav, Jyoti; Chaudhary, R.; Mukhiya, R.; Sharma, R.; Khanna, V. K.

    2016-04-01

    The paper presents the process design and simulation of silicon-on-insulator (SOI)-based dual-gate metal oxide field-effect transistor (DG-MOSFET) stacked with different dielectric layers on the top of gate oxide. A detailed 2D process simulation of SOI-MOSFETs and its electrical characterization has been done using SILVACO® TCAD tool. A variation in transconductance was observed with different dielectric layers, AlN-gate MOSFET having the highest tranconductance value as compared to other three dielectric layers (SiO2, Si3N4 and Al2O3).

  12. Micromachined Thin-Film Sensors for SOI-CMOS Co-Integration

    Science.gov (United States)

    Laconte, Jean; Flandre, D.; Raskin, Jean-Pierre

    Co-integration of sensors with their associated electronics on a single silicon chip may provide many significant benefits regarding performance, reliability, miniaturization and process simplicity without significantly increasing the total cost. Micromachined Thin-Film Sensors for SOI-CMOS Co-integration covers the challenges and interests and demonstrates the successful co-integration of gas flow sensors on dielectric membrane, with their associated electronics, in CMOS-SOI technology. We firstly investigate the extraction of residual stress in thin layers and in their stacking and the release, in post-processing, of a 1 μm-thick robust and flat dielectric multilayered membrane using Tetramethyl Ammonium Hydroxide (TMAH) silicon micromachining solution.

  13. High performance flexible CMOS SOI FinFETs

    KAUST Repository

    Fahad, Hossain M.; Sevilla, Galo T.; Ghoneim, Mohamed T.; Hussain, Muhammad Mustafa

    2014-01-01

    We demonstrate the first ever CMOS compatible soft etch back based high performance flexible CMOS SOI FinFETs. The move from planar to non-planar FinFETs has enabled continued scaling down to the 14 nm technology node. This has been possible due

  14. A novel δ-doped partially insulated dopant-segregated Schottky barrier SOI MOSFET for analog/RF applications

    International Nuclear Information System (INIS)

    Patil, Ganesh C; Qureshi, S

    2011-01-01

    In this paper, a comparative analysis of single-gate dopant-segregated Schottky barrier (DSSB) SOI MOSFET and raised source/drain ultrathin-body SOI MOSFET (RSD UTB) has been carried out to explore the thermal efficiency, scalability and analog/RF performance of these devices. A novel p-type δ-doped partially insulated DSSB SOI MOSFET (DSSB Pi-OX-δ) has been proposed to reduce the self-heating effect and to improve the high-frequency performance of DSSB SOI MOSFET over RSD UTB. The improved analog/RF figures of merit such as transconductance, transconductance generation factor, unity-gain frequency, maximum oscillation frequency, short-circuit current gain and unilateral power gain in DSSB Pi-OX-δ MOSFET show the suitability of this device for analog/RF applications. The reduced drain-induced barrier lowering, subthreshold swing and parasitic capacitances also make this device highly scalable. By using mixed-mode simulation capability of MEDICI simulator a cascode amplifier has been implemented using all the structures (RSD UTB, DSSB SOI and DSSB Pi-OX-δ MOSFETs). The results of this implementation show that the gain-bandwidth product in the case of DSSB Pi-OX-δ MOSFET has improved by 50% as compared to RSD UTB and by 20% as compared to DSSB SOI MOSFET. The detailed fabrication flow of DSSB Pi-OX-δ MOSFET has been proposed which shows that with the bare minimum of steps the performance of DSSB SOI MOSFET can be improved significantly in comparison to RSD UTB

  15. SOI silicon on glass for optical MEMS

    DEFF Research Database (Denmark)

    Larsen, Kristian Pontoppidan; Ravnkilde, Jan Tue; Hansen, Ole

    2003-01-01

    and a final sealing at the interconnects can be performed using a suitable polymer. Packaged MEMS on glass are advantageous within Optical MEMS and for sensitive capacitive devices. We report on experiences with bonding SOI to Pyrex. Uniform DRIE shallow and deep etching was achieved by a combination......A newly developed fabrication method for fabrication of single crystalline Si (SCS) components on glass, utilizing Deep Reactive Ion Etching (DRIE) of a Silicon On Insulator (SOI) wafer is presented. The devices are packaged at wafer level in a glass-silicon-glass (GSG) stack by anodic bonding...... of an optimized device layout and an optimized process recipe. The behavior of the buried oxide membrane when used as an etch stop for the through-hole etch is described. No harmful buckling or fracture of the membrane is observed for an oxide thickness below 1 μm, but larger and more fragile released structures...

  16. Evaluation of a High Temperature SOI Half-Bridge MOSFET Driver, Type CHT-HYPERION

    Science.gov (United States)

    Patterson, Richard; Hammoud, Ahmad

    2010-01-01

    Silicon-On-Insulator (SOI) technology utilizes the addition of an insulation layer in its structure to reduce leakage currents and to minimize parasitic junctions. As a result, SOIbased devices exhibit reduced internal heating as compared to the conventional silicon devices, consume less power, and can withstand higher operating temperatures. In addition, SOI electronic integrated circuits display good tolerance to radiation by virtue of introducing barriers or lengthening the path for penetrating particles and/or providing a region for trapping incident ionization. The benefits of these parts make them suitable for use in deep space and planetary exploration missions where extreme temperatures and radiation are encountered. Although designed for high temperatures, very little data exist on the operation of SOI devices and circuits at cryogenic temperatures. In this work, the performance of a commercial-off-the-shelf (COTS) SOI half-bridge driver integrated circuit was evaluated under extreme temperatures and thermal cycling. The investigations were carried out to establish a baseline on the functionality and to determine suitability of this device for use in space exploration missions under extreme temperature conditions.

  17. A Demonstration of TIA Using FD-SOI CMOS OPAMP for Far-Infrared Astronomy

    Science.gov (United States)

    Nagase, Koichi; Wada, Takehiko; Ikeda, Hirokazu; Arai, Yasuo; Ohno, Morifumi; Hanaoka, Misaki; Kanada, Hidehiro; Oyabu, Shinki; Hattori, Yasuki; Ukai, Sota; Suzuki, Toyoaki; Watanabe, Kentaroh; Baba, Shunsuke; Kochi, Chihiro; Yamamoto, Keita

    2016-07-01

    We are developing a fully depleted silicon-on-insulator (FD-SOI) CMOS readout integrated circuit (ROIC) operated at temperatures below ˜ 4 K. Its application is planned for the readout circuit of high-impedance far-infrared detectors for astronomical observations. We designed a trans-impedance amplifier (TIA) using a CMOS operational amplifier (OPAMP) with FD-SOI technique. The TIA is optimized to readout signals from a germanium blocked impurity band (Ge BIB) detector which is highly sensitive to wavelengths of up to ˜ 200 \\upmu m. For the first time, we demonstrated the FD-SOI CMOS OPAMP combined with the Ge BIB detector at 4.5 K. The result promises to solve issues faced by conventional cryogenic ROICs.

  18. Indium arsenide-on-SOI MOSFETs with extreme lattice mismatch

    Science.gov (United States)

    Wu, Bin

    Both molecular beam epitaxy (MBE) and metal organic chemical vapor deposition (MOCVD) have been used to explore the growth of InAs on Si. Despite 11.6% lattice mismatch, planar InAs structures have been observed by scanning electron microscopy (SEM) when nucleating using MBE on patterned submicron Si-on-insulator (SOI) islands. Planar structures of size as large as 500 x 500 nm 2 and lines of width 200 nm and length a few microns have been observed. MOCVD growth of InAs also generates single grain structures on Si islands when the size is reduced to 100 x 100 nm2. By choosing SOI as the growth template, selective growth is enabled by MOCVD. Post-growth pattern-then-anneal process, in which MOCVD InAs is deposited onto unpatterned SOI followed with patterning and annealing of InAs-on-Si structure, is found to change the relative lattice parameters of encapsulated 17/5 nm InAs/Si island. Observed from transmission electron diffraction (TED) patterns, the lattice mismatch of 17/5 nm InAs/Si island reduces from 11.2 to 4.2% after being annealed at 800°C for 30 minutes. High-k Al2O3 dielectrics have been deposited by both electron-beam-enabled physical vapor deposition (PVD) and atomic layer deposition (ALD). Films from both techniques show leakage currents on the order of 10-9A/cm2, at ˜1 MV/cm electric field, breakdown field > ˜6 MV/cm, and dielectric constant > 6, comparable to those of reported ALD prior arts by Groner. The first MOSFETs with extreme lattice mismatch InAs-on-SOI channels using PVD Al2O3 as the gate dielectric are characterized. Channel recess was used to improve the gate control of the drain current.

  19. Formation of SIMOX–SOI structure by high-temperature oxygen implantation

    International Nuclear Information System (INIS)

    Hoshino, Yasushi; Kamikawa, Tomohiro; Nakata, Jyoji

    2015-01-01

    We have performed oxygen ion implantation in silicon at very high substrate-temperatures (⩽1000 °C) for the purpose of forming silicon-on-insulator (SOI) structure. We have expected that the high-temperature implantation can effectively avoids ion-beam-induced damages in the SOI layer and simultaneously stabilizes the buried oxide (BOX) and SOI-Si layer. Such a high-temperature implantation makes it possible to reduce the post-implantation annealing temperature. In the present study, oxygen ions with 180 keV are incident on Si(0 0 1) substrates at various temperatures from room temperature (RT) up to 1000 °C. The ion-fluencies are in order of 10"1"7–10"1"8 ions/cm"2. Samples have been analyzed by atomic force microscope, Rutherford backscattering, and micro-Raman spectroscopy. It is found in the AFM analysis that the surface roughness of the samples implanted at 500 °C or below are significantly small with mean roughness of less than 1 nm, and gradually increased for the 800 °C-implanted sample. On the other hand, a lot of dents are observed for the 1000 °C-implanted sample. RBS analysis has revealed that stoichiometric SOI-Si and BOX-SiO_2 layers are formed by oxygen implantation at the substrate temperatures of RT, 500, and 800 °C. However, SiO_2-BOX layer has been desorbed during the implantation. Raman spectra shows that the ion-beam-induced damages are fairly suppressed by such a high-temperatures implantation.

  20. A novel SOI pressure sensor for high temperature application

    International Nuclear Information System (INIS)

    Li Sainan; Liang Ting; Wang Wei; Hong Yingping; Zheng Tingli; Xiong Jijun

    2015-01-01

    The silicon on insulator (SOI) high temperature pressure sensor is a novel pressure sensor with high-performance and high-quality. A structure of a SOI high-temperature pressure sensor is presented in this paper. The key factors including doping concentration and power are analyzed. The process of the sensor is designed with the critical process parameters set appropriately. The test result at room temperature and high temperature shows that nonlinear error below is 0.1%, and hysteresis is less than 0.5%. High temperature measuring results show that the sensor can be used for from room temperature to 350 °C in harsh environments. It offers a reference for the development of high temperature piezoresistive pressure sensors. (semiconductor devices)

  1. Towards Polarization Diversity on the SOI Platform With Simple Fabrication Process

    DEFF Research Database (Denmark)

    Ding, Yunhong; Liu, Liu; Peucheret, Christophe

    2011-01-01

    We present a polarization diversity circuit built on the silicon-on-insulator (SOI) platform, which can be fabricated by a simple process. The polarization diversity is based on two identical air-clad asymmetrical directional couplers, which simultaneously play the roles of polarization splitter...... and rotator. A silicon polarization diversity circuit with a single microring resonator is fabricated on the SOI platform. Only ${1-dB polarization-dependent loss is demonstrated. A significant improvement of the polarization dependence is obtained for 20-Gb/s nonreturn-to-zero differential phase-shift keying...

  2. An analysis of radiation effects on electronics and soi-mos devices as an alternative

    International Nuclear Information System (INIS)

    Ikraiam, F. A.

    2013-01-01

    The effects of radiation on semiconductors and electronic components are analyzed. The performance of such circuitry depends upon the reliability of electronic devices where electronic components will be unavoidably exposed to radiation. This exposure can be detrimental or even fatal to the expected function of the devices. Single event effects (SEE), in particular, which lead to sudden device or system failure and total dose effects can reduce the lifetime of electronic devices in such systems are discussed. Silicon-on-insulator (SOI) technology is introduced as an alternative for radiation-hardened devices. I-V Characteristics Curves for SOI-MOS devices subjected to a different total radiation doses are illustrated. In addition, properties of some semiconductor materials such as diamond, diamond-like carbon films, SiC, GaP, and AlGaN/GaN are compared with those of SOI devices. The recognition of the potential usefulness of SOI-MOS semiconductor materials for harsh environments is discussed. A summary of radiation effects, impacts and mitigation techniques is also presented. (authors)

  3. Generation and confinement of mobile charges in buried oxide of SOI substrates; Generation et confinement de charges mobiles dans les oxydes enterres de substrats SOI

    Energy Technology Data Exchange (ETDEWEB)

    Gruber, O.; Krawiec, S.; Musseau, O.; Paillet, Ph.; Courtot-Descharles, A. [CEA Bruyeres-le-Chatel, DIF, 91 (France)

    1999-07-01

    We analyze the mechanisms of generation and confinement of mobile protons resulting from hydrogen annealing of SOI buried oxides. This study of the mechanisms of generation and confinement of mobile protons in the buried oxide of SOI wafers emphasizes the importance of H+ diffusion in the oxide in the formation of a mobile charge. Under specific electric field conditions the irradiation of these devices results in a pinning of this mobile charge at the bottom Si-SiO{sub 2} interface. Ab initio calculations are in progress to investigate the possible precursor defects in the oxide and detail the mechanism for mobile proton generation and confinement. (authors)

  4. Ultra-low specific on-resistance SOI double-gate trench-type MOSFET

    International Nuclear Information System (INIS)

    Lei Tianfei; Luo Xiaorong; Ge Rui; Chen Xi; Wang Yuangang; Yao Guoliang; Jiang Yongheng; Zhang Bo; Li Zhaoji

    2011-01-01

    An ultra-low specific on-resistance (R on,sp ) silicon-on-insulator (SOI) double-gate trench-type MOSFET (DG trench MOSFET) is proposed. The MOSFET features double gates and an oxide trench: the oxide trench is in the drift region, one trench gate is inset in the oxide trench and one trench gate is extended into the buried oxide. Firstly, the double gates reduce R on,sp by forming dual conduction channels. Secondly, the oxide trench not only folds the drift region, but also modulates the electric field, thereby reducing device pitch and increasing the breakdown voltage (BV). ABV of 93 V and a R on,sp of 51.8 mΩ·mm 2 is obtained for a DG trench MOSFET with a 3 μm half-cell pitch. Compared with a single-gate SOI MOSFET (SG MOSFET) and a single-gate SOI MOSFET with an oxide trench (SG trench MOSFET), the R on,sp of the DG trench MOSFET decreases by 63.3% and 33.8% at the same BV, respectively. (semiconductor devices)

  5. Electron mobility in the inversion layers of fully depleted SOI films

    Energy Technology Data Exchange (ETDEWEB)

    Zaitseva, E. G., E-mail: ZaytsevaElza@yandex.ru; Naumova, O. V.; Fomin, B. I. [Russian Academy of Sciences, Rzhanov Institute of Semiconductor Physics, Siberian Branch (Russian Federation)

    2017-04-15

    The dependences of the electron mobility μ{sub eff} in the inversion layers of fully depleted double–gate silicon-on-insulator (SOI) metal–oxide–semiconductor (MOS) transistors on the density N{sub e} of induced charge carriers and temperature T are investigated at different states of the SOI film (inversion–accumulation) from the side of one of the gates. It is shown that at a high density of induced charge carriers of N{sub e} > 6 × 10{sup 12} cm{sup –2} the μeff(T) dependences allow the components of mobility μ{sub eff} that are related to scattering at surface phonons and from the film/insulator surface roughness to be distinguished. The μ{sub eff}(N{sub e}) dependences can be approximated by the power functions μ{sub eff}(N{sub e}) ∝ N{sub e}{sup −n}. The exponents n in the dependences and the dominant mechanisms of scattering of electrons induced near the interface between the SOI film and buried oxide are determined for different N{sub e} ranges and film states from the surface side.

  6. Charge collection mechanisms in MOS/SOI transistors irradiated by energetic heavy ions

    International Nuclear Information System (INIS)

    Musseau, O.; Leray, J.L.; Ferlet, V.; Umbert, A.; Coic, Y.M.; Hesto, P.

    1991-01-01

    We have investigated with both experimental and numerical methods (Monte Carlo and drift-diffusion models) various charge collection mechanisms in NMOS/SOI transistors irradiated by single energetic heavy ions. Our physical interpretations of data emphasize the influence of various parasitic structures of the device. Two charge collection mechanisms are detailed: substrate funneling in buried MOS capacitor and latching of the parasitic bipolar transistor. Based on carrier transport and charge collection, the sensitivity of future scaled down CMOS/SOI technologies is finally discussed

  7. Compliments, motivation et estime de soi : l'effet paradoxal de féliciter les capacités des enfants

    DEFF Research Database (Denmark)

    Hansen, Mikkel

    2014-01-01

    motivation may suffer when given feedback that evaluates their person. We discuss links between different types of feedback and children’s motivational frameworks, including their self-esteem. // RÉSUMÉ L’objectif de compliments tels que « T’es très fort, très intelligent » est d’encourager les enfants, mais...... des recherches récentes montrent que de telles propositions en feedback peuvent dissuader les enfants de s’engager dans des tâches difficiles, réduisant ainsi leurs apprentissages. Nous exposerons les travaux de Dweck (e.g., 2000) qui démontrent comment les compliments centrés sur l’évaluation de la...... personne influent négativement sur la motivation intrinsèque du sujet. Nous discuterons des liens existant entre différents types de feedback et les cadres motivationnels où évoluent les enfants, ainsi que de leur estime de soi....

  8. Advanced Liquid-Free, Piezoresistive, SOI-Based Pressure Sensors for Measurements in Harsh Environments

    Directory of Open Access Journals (Sweden)

    Ha-Duong Ngo

    2015-08-01

    Full Text Available In this paper we present and discuss two innovative liquid-free SOI sensors for pressure measurements in harsh environments. The sensors are capable of measuring pressures at high temperatures. In both concepts media separation is realized using a steel membrane. The two concepts represent two different strategies for packaging of devices for use in harsh environments and at high temperatures. The first one is a “one-sensor-one-packaging_technology” concept. The second one uses a standard flip-chip bonding technique. The first sensor is a “floating-concept”, capable of measuring pressures at temperatures up to 400 °C (constant load with an accuracy of 0.25% Full Scale Output (FSO. A push rod (mounted onto the steel membrane transfers the applied pressure directly to the center-boss membrane of the SOI-chip, which is placed on a ceramic carrier. The chip membrane is realized by Deep Reactive Ion Etching (DRIE or Bosch Process. A novel propertied chip housing employing a sliding sensor chip that is fixed during packaging by mechanical preloading via the push rod is used, thereby avoiding chip movement, and ensuring optimal push rod load transmission. The second sensor can be used up to 350 °C. The SOI chips consists of a beam with an integrated centre-boss with was realized using KOH structuring and DRIE. The SOI chip is not “floating” but bonded by using flip-chip technology. The fabricated SOI sensor chip has a bridge resistance of 3250 Ω. The realized sensor chip has a sensitivity of 18 mV/µm measured using a bridge current of 1 mA.

  9. Advanced Liquid-Free, Piezoresistive, SOI-Based Pressure Sensors for Measurements in Harsh Environments.

    Science.gov (United States)

    Ngo, Ha-Duong; Mukhopadhyay, Biswaijit; Ehrmann, Oswin; Lang, Klaus-Dieter

    2015-08-18

    In this paper we present and discuss two innovative liquid-free SOI sensors for pressure measurements in harsh environments. The sensors are capable of measuring pressures at high temperatures. In both concepts media separation is realized using a steel membrane. The two concepts represent two different strategies for packaging of devices for use in harsh environments and at high temperatures. The first one is a "one-sensor-one-packaging_technology" concept. The second one uses a standard flip-chip bonding technique. The first sensor is a "floating-concept", capable of measuring pressures at temperatures up to 400 °C (constant load) with an accuracy of 0.25% Full Scale Output (FSO). A push rod (mounted onto the steel membrane) transfers the applied pressure directly to the center-boss membrane of the SOI-chip, which is placed on a ceramic carrier. The chip membrane is realized by Deep Reactive Ion Etching (DRIE or Bosch Process). A novel propertied chip housing employing a sliding sensor chip that is fixed during packaging by mechanical preloading via the push rod is used, thereby avoiding chip movement, and ensuring optimal push rod load transmission. The second sensor can be used up to 350 °C. The SOI chips consists of a beam with an integrated centre-boss with was realized using KOH structuring and DRIE. The SOI chip is not "floating" but bonded by using flip-chip technology. The fabricated SOI sensor chip has a bridge resistance of 3250 Ω. The realized sensor chip has a sensitivity of 18 mV/µm measured using a bridge current of 1 mA.

  10. Ultra compact triplexing filters based on SOI nanowire AWGs

    Science.gov (United States)

    Jiashun, Zhang; Junming, An; Lei, Zhao; Shijiao, Song; Liangliang, Wang; Jianguang, Li; Hongjie, Wang; Yuanda, Wu; Xiongwei, Hu

    2011-04-01

    An ultra compact triplexing filter was designed based on a silicon on insulator (SOI) nanowire arrayed waveguide grating (AWG) for fiber-to-the-home FTTH. The simulation results revealed that the design performed well in the sense of having a good triplexing function. The designed SOI nanowire AWGs were fabricated using ultraviolet lithography and induced coupler plasma etching. The experimental results showed that the crosstalk was less than -15 dB, and the 3 dB-bandwidth was 11.04 nm. The peak wavelength output from ports a, c, and b were 1455, 1510 and 1300 nm, respectively, which deviated from our original expectations. The deviation of the wavelength is mainly caused by 45 nm width deviation of the arrayed waveguides during the course of the fabrication process and partly caused by material dispersion.

  11. Design and fabrication of piezoresistive p-SOI Wheatstone bridges for high-temperature applications

    Science.gov (United States)

    Kähler, Julian; Döring, Lutz; Merzsch, Stephan; Stranz, Andrej; Waag, Andreas; Peiner, Erwin

    2011-06-01

    For future measurements while depth drilling, commercial sensors are required for a temperature range from -40 up to 300 °C. Conventional piezoresistive silicon sensors cannot be used at higher temperatures due to an exponential increase of leakage currents which results in a drop of the bridge voltage. A well-known procedure to expand the temperature range of silicon sensors and to reduce leakage currents is to employ Silicon-On-Insulator (SOI) instead of standard wafer material. Diffused resistors can be operated up to 200 °C, but show the same problems beyond due to leakage of the p-njunction. Our approach is to use p-SOI where resistors as well as interconnects are defined by etching down to the oxide layer. Leakage is suppressed and the temperature dependence of the bridges is very low (TCR = (2.6 +/- 0.1) μV/K@1 mA up to 400 °C). The design and process flow will be presented in detail. The characteristics of Wheatstone bridges made of silicon, n- SOI, and p-SOI will be shown for temperatures up to 300 °C. Besides, thermal FEM-simulations will be described revealing the effect of stress between silicon and the silicon-oxide layer during temperature cycling.

  12. Extra source implantation for suppression floating-body effect in partially depleted SOI MOSFETs

    International Nuclear Information System (INIS)

    Chen Jing; Luo Jiexin; Wu Qingqing; Chai Zhan; Huang Xiaolu; Wei Xing; Wang Xi

    2012-01-01

    Silicon-on-insulate (SOI) MOSFETs offer benefits over bulk competitors for fully isolation and smaller junction capacitance. The performance of partially depleted (PD) SOI MOSFETs, though, is not good enough. Since the body is floating, the extra holes (for nMOSFETs) in this region accumulate, causing body potential arise, which of course degrades the performance of the device. How to suppress the floating-body effect becomes critical. There are mainly two ways for the goal. One is to employ body-contact structures, and the other SiGe source/drain structures. However, the former consumes extra area, not welcomed in the state-of-the-art chips design. The latter is not compatible with the traditional CMOS technology. Finding a structure both saving area and compatible technology is the most urgent for PD SOI MOSFETs. Recently, we have developed a new structure with extra heavy boron implantation in the source region for PD SOI nMOSFETs. It consumes no extra area and is also compatible with CMOS technology. The device is found to be free of kink effect in simulation, which implies the floating-body effect is greatly suppressed. In addition, the mechanisms of the kink-free, as well as the impact of different implanting conditions are interpreted.

  13. Impact of back-gate bias on the hysteresis effect in partially depleted SOI MOSFETs

    International Nuclear Information System (INIS)

    Luo Jie-Xin; Chen Jing; Zhou Jian-Hua; Wu Qing-Qing; Chai Zhan; Yu Tao; Wang Xi

    2012-01-01

    The hysteresis effect in the output characteristics, originating from the floating body effect, has been measured in partially depleted (PD) silicon-on-insulator (SOI) MOSFETs at different back-gate biases. I D hysteresis has been developed to clarify the hysteresis characteristics. The fabricated devices show the positive and negative peaks in the I D hysteresis. The experimental results show that the I D hysteresis is sensitive to the back gate bias in 0.13-μm PD SOI MOSFETs and does not vary monotonously with the back-gate bias. Based on the steady-state Shockley-Read-Hall (SRH) recombination theory, we have successfully interpreted the impact of the back-gate bias on the hysteresis effect in PD SOI MOSFETs. (condensed matter: structural, mechanical, and thermal properties)

  14. La question du « sujet » dans l’herméneutique gadamérienne.

    Directory of Open Access Journals (Sweden)

    Guy Deniau

    2005-03-01

    Full Text Available L’herméneutique philosophique de Gadamer se présente comme une tentative de libérer la question de la vérité de l’étroitesse dans laquelle le concept moderne de méthode l’aurait cantonnée. Pour ce faire, elle interroge des expériences (l’art, l’histoire, le langage dont l’ampleur ne se laisse pas réduire au primat de la conscience certaine de soi. C’est pourquoi la critique de la méthode moderne qu’opère l’herméneutique en interrogeant l’expérience de la compréhension est en même temps une critique du fondement de cette méthode, c’est-à-dire de la subjectivité, de la conscience certaine de soi. L’objet de cette étude est de mettre en évidence la cohérence et l’unité de ce qui vient dans l’herméneutique se substituer, sous diverses figures apparemment éparses, au « sujet » : la question du « sujet » y devient celle du « sujet » comme question.Gadamer’s philosophical hermeneutics presents itselfs as an attempt to liberate the question of the truth in which the modern concept of method should have it confined. So Gadamer analyses experiences (art, history, language whose extent can’t be reduced to the primacy of selfconsciousness. So the critic of modern method by hermeneutics is at the same time the critic of its foundation, that is to say of the subjectivity, of the certainty of selfsconsciousness. The intention of this study is to bring foreward the coherence and the unity of Gadamer’s diverses remarks about what comes after subjectivity : the question of « subject » becomes the one of the « subject » as a question.

  15. Performance of the INTPIX6 SOI pixel detector

    International Nuclear Information System (INIS)

    Arai, Y.; Miyoshi, T.; Bugiel, Sz.; Dasgupta, R.; Idzik, M.; Kapusta, P.; Turala, M.; Kucewicz, W.

    2017-01-01

    Characterization of the monolithic pixel detector INPTIX6, designed at KEK and fabricated in Lapis 0.2 μ  m Fully-Depleted, Low-Leakage Silicon-On-Insulator (SOI) CMOS technology, was performed. The INTPIX6 comprises a large area of 1408 × 896 integrating type squared pixels of 12 micron pitch. In this work the performance and measurement results of the prototypes produced on lower resistivity Czochralski type (CZ-n) and high resistivity floating zone (FZ-n) sensor wafers are presented. Using 241 Am radioactive source the noise of INTPIX6 was measured, showing the ENC (Equivalent Noise Charge) of about 70 e − . The resolution calculated from the FWHM of the Iron-55 X-ray peak was about 100 e − . The radiation hardness of the SOI pixel detector was also investigated. The CZ-n type INTPIX6 received a dose of 60 krad and its performance has been continuously monitored during the irradiation.

  16. Performance of the INTPIX6 SOI pixel detector

    Science.gov (United States)

    Arai, Y.; Bugiel, Sz.; Dasgupta, R.; Idzik, M.; Kapusta, P.; Kucewicz, W.; Miyoshi, T.; Turala, M.

    2017-01-01

    Characterization of the monolithic pixel detector INPTIX6, designed at KEK and fabricated in Lapis 0.2 μ m Fully-Depleted, Low-Leakage Silicon-On-Insulator (SOI) CMOS technology, was performed. The INTPIX6 comprises a large area of 1408 × 896 integrating type squared pixels of 12 micron pitch. In this work the performance and measurement results of the prototypes produced on lower resistivity Czochralski type (CZ-n) and high resistivity floating zone (FZ-n) sensor wafers are presented. Using 241Am radioactive source the noise of INTPIX6 was measured, showing the ENC (Equivalent Noise Charge) of about 70 e-. The resolution calculated from the FWHM of the Iron-55 X-ray peak was about 100 e-. The radiation hardness of the SOI pixel detector was also investigated. The CZ-n type INTPIX6 received a dose of 60 krad and its performance has been continuously monitored during the irradiation.

  17. Ultra compact triplexing filters based on SOI nanowire AWGs

    Energy Technology Data Exchange (ETDEWEB)

    Zhang Jiashun; An Junming; Zhao Lei; Song Shijiao; Wang Liangliang; Li Jianguang; Wang Hongjie; Wu Yuanda; Hu Xiongwei, E-mail: junming@red.semi.ac.cn [State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China)

    2011-04-15

    An ultra compact triplexing filter was designed based on a silicon on insulator (SOI) nanowire arrayed waveguide grating (AWG) for fiber-to-the-home FTTH. The simulation results revealed that the design performed well in the sense of having a good triplexing function. The designed SOI nanowire AWGs were fabricated using ultraviolet lithography and induced coupler plasma etching. The experimental results showed that the crosstalk was less than -15 dB, and the 3 dB-bandwidth was 11.04 nm. The peak wavelength output from ports a, c, and b were 1455, 1510 and 1300 nm, respectively, which deviated from our original expectations. The deviation of the wavelength is mainly caused by 45 nm width deviation of the arrayed waveguides during the course of the fabrication process and partly caused by material dispersion. (semiconductor devices)

  18. Ultra compact triplexing filters based on SOI nanowire AWGs

    International Nuclear Information System (INIS)

    Zhang Jiashun; An Junming; Zhao Lei; Song Shijiao; Wang Liangliang; Li Jianguang; Wang Hongjie; Wu Yuanda; Hu Xiongwei

    2011-01-01

    An ultra compact triplexing filter was designed based on a silicon on insulator (SOI) nanowire arrayed waveguide grating (AWG) for fiber-to-the-home FTTH. The simulation results revealed that the design performed well in the sense of having a good triplexing function. The designed SOI nanowire AWGs were fabricated using ultraviolet lithography and induced coupler plasma etching. The experimental results showed that the crosstalk was less than -15 dB, and the 3 dB-bandwidth was 11.04 nm. The peak wavelength output from ports a, c, and b were 1455, 1510 and 1300 nm, respectively, which deviated from our original expectations. The deviation of the wavelength is mainly caused by 45 nm width deviation of the arrayed waveguides during the course of the fabrication process and partly caused by material dispersion. (semiconductor devices)

  19. Comparative study of SOI/Si hybrid substrates fabricated using high-dose and low-dose oxygen implantation

    International Nuclear Information System (INIS)

    Dong Yemin; Chen Meng; Chen Jing; Wang Xiang; Wang Xi

    2004-01-01

    Hybrid substrates comprising both silicon-on-insulator (SOI) and bulk Si regions have been fabricated using the technique of patterned separation by implantation of oxygen (SIMOX) with high-dose (1.5 x 10 18 cm -2 ) and low-dose ((1.5-3.5) x 10 17 cm -2 ) oxygen ions, respectively. Cross-sectional transmission electron microscopy (XTEM) was employed to examine the microstructures of the resulting materials. Experimental results indicate that the SOI/Si hybrid substrate fabricated using high-dose SIMOX is of inferior quality with very large surface height step and heavily damaged transitions between the SOI and bulk regions. However, the quality of the SOI/Si hybrid substrate is enhanced dramatically by reducing the implant dose. The defect density in transitions is reduced considerably. Moreover, the expected surface height difference does not exist and the surface is exceptionally flat. The possible mechanisms responsible for the improvements in quality are discussed

  20. Approaches of multilayer overlay process control for 28nm FD-SOI derivative applications

    Science.gov (United States)

    Duclaux, Benjamin; De Caunes, Jean; Perrier, Robin; Gatefait, Maxime; Le Gratiet, Bertrand; Chapon, Jean-Damien; Monget, Cédric

    2018-03-01

    Derivative technology like embedded Non-Volatile Memories (eNVM) is raising new types of challenges on the "more than Moore" path. By its construction: overlay is critical across multiple layers, by its running mode: usage of high voltage are stressing leakages and breakdown, and finally with its targeted market: Automotive, Industry automation, secure transactions… which are all requesting high device reliability (typically below 1ppm level). As a consequence, overlay specifications are tights, not only between one layer and its reference, but also among the critical layers sharing the same reference. This work describes a broad picture of the key points for multilayer overlay process control in the case of a 28nm FD-SOI technology and its derivative flows. First, the alignment trees of the different flow options have been optimized using a realistic process assumptions calculation for indirect overlay. Then, in the case of a complex alignment tree involving heterogeneous scanner toolset, criticality of tool matching between reference layer and critical layers of the flow has been highlighted. Improving the APC control loops of these multilayer dependencies has been studied with simulations of feed-forward as well as implementing new rework algorithm based on multi-measures. Finally, the management of these measurement steps raises some issues for inline support and using calculations or "virtual overlay" could help to gain some tool capability. A first step towards multilayer overlay process control has been taken.

  1. SOI Digital Accelerometer Based on Pull-in Time Configuration

    NARCIS (Netherlands)

    Pakula, L.S.; Rajaraman, V.; French, P.J.

    2009-01-01

    The operation principle, design, fabrication and measurement results of a quasi digital accelerometer fabricated on a thin silicon-on-insulator (SOI) substrate is presented. The accelerometer features quasi-digital output, therefore eliminating the need for analogue signal conditioning. The

  2. Performance study of double SOI image sensors

    Science.gov (United States)

    Miyoshi, T.; Arai, Y.; Fujita, Y.; Hamasaki, R.; Hara, K.; Ikegami, Y.; Kurachi, I.; Nishimura, R.; Ono, S.; Tauchi, K.; Tsuboyama, T.; Yamada, M.

    2018-02-01

    Double silicon-on-insulator (DSOI) sensors composed of two thin silicon layers and one thick silicon layer have been developed since 2011. The thick substrate consists of high resistivity silicon with p-n junctions while the thin layers are used as SOI-CMOS circuitry and as shielding to reduce the back-gate effect and crosstalk between the sensor and the circuitry. In 2014, a high-resolution integration-type pixel sensor, INTPIX8, was developed based on the DSOI concept. This device is fabricated using a Czochralski p-type (Cz-p) substrate in contrast to a single SOI (SSOI) device having a single thin silicon layer and a Float Zone p-type (FZ-p) substrate. In the present work, X-ray spectra of both DSOI and SSOI sensors were obtained using an Am-241 radiation source at four gain settings. The gain of the DSOI sensor was found to be approximately three times that of the SSOI device because the coupling capacitance is reduced by the DSOI structure. An X-ray imaging demonstration was also performed and high spatial resolution X-ray images were obtained.

  3. A Demonstrator Analog Signal Processing Circuit in a Radiation Hard SOI-CMOS Technology

    CERN Multimedia

    2002-01-01

    % RD-9 A Demonstrator Analog Signal Processing Circuit in a Radiation Hard SOI-CMOS Technology \\\\ \\\\Radiation hardened SOI-CMOS (Silicon-On-Insulator, Complementary Metal-Oxide- \\linebreak Semiconductor planar microelectronic circuit technology) was a likely candidate technology for mixed analog-digital signal processing electronics in experiments at the future high luminosity hadron colliders. We have studied the analog characteristics of circuit designs realized in the Thomson TCS radiation hard technologies HSOI3-HD. The feature size of this technology was 1.2 $\\mu$m. We have irradiated several devices up to 25~Mrad and 3.10$^{14}$ neutrons cm$^{-2}$. Gain, noise characteristics and speed have been measured. Irradiation introduces a degradation which in the interesting bandwidth of 0.01~MHz~-~1~MHz is less than 40\\%. \\\\ \\\\Some specific SOI phenomena have been studied in detail, like the influence on the noise spectrum of series resistence in the thin silicon film that constitutes the body of the transistor...

  4. A technique for simultaneously improving the product of cutoff frequency–breakdown voltage and thermal stability of SOI SiGe HBT

    International Nuclear Information System (INIS)

    Fu Qiang; Zhang Wan-Rong; Jin Dong-Yue; Zhao Yan-Xiao; Wang Xiao

    2016-01-01

    The product of the cutoff frequency and breakdown voltage ( f T ×BV CEO ) is an important figure of merit (FOM) to characterize overall performance of heterojunction bipolar transistor (HBT). In this paper, an approach to introducing a thin N + -buried layer into N collector region in silicon-on-insulator (SOI) SiGe HBT to simultaneously improve the FOM of f T ×BV CEO and thermal stability is presented by using two-dimensional (2D) numerical simulation through SILVACO device simulator. Firstly, in order to show some disadvantages of the introduction of SOI structure, the effects of SOI insulation layer thickness ( T BOX ) on f T , BV CEO , and the FOM of f T ×BV CEO are presented. The introduction of SOI structure remarkably reduces the electron concentration in collector region near SOI substrate insulation layer, obviously reduces f T , slightly increases BV CEO to some extent, but ultimately degrades the FOM of f T ×BV CEO . Although the f T , BV CEO , and the FOM of f T ×BV CEO can be improved by increasing SOI insulator SiO 2 layer thickness T BOX in SOI structure, the device temperature and collector current are increased due to lower thermal conductivity of SiO 2 layer, as a result, the self-heating effect of the device is enhanced, and the thermal stability of the device is degraded. Secondly, in order to alleviate the foregoing problem of low electron concentration in collector region near SOI insulation layer and the thermal stability resulting from thick T BOX , a thin N + -buried layer is introduced into collector region to not only improve the FOM of f T ×BV CEO , but also weaken the self-heating effect of the device, thus improving the thermal stability of the device. Furthermore, the effect of the location of the thin N + -buried layer in collector region is investigated in detail. The result show that the FOM of f T ×BV CEO is improved and the device temperature decreases as the N + -buried layer shifts toward SOI substrate insulation layer

  5. A graphene spin diode based on Rashba SOI

    International Nuclear Information System (INIS)

    Mohammadpour, Hakimeh

    2015-01-01

    In this paper a graphene-based two-terminal electronic device is modeled for application in spintronics. It is based on a gapped armchair graphene nanoribbon (GNR). The electron transport is considered through a scattering or channel region which is sandwiched between two lateral semi-infinite ferromagnetic leads. The two ferromagnetic leads, being half-metallic, are supposed to be in either parallel or anti-parallel magnetization. Meanwhile, the central channel region is a normal layer under the influence of the Rashba SOI, induced e.g., by the substrate. The device operation is based on modulating the (spin-) current by tuning the strength of the RSOI. The resultant current, being spin-polarized, is controlled by the RSOI in mutual interplay with the channel length. Inverting alternating bias voltage to a fully rectified spin-current is the main achievement of this paper. - Highlights: • Graphene-based electronic device is modeled with ferromagnetic leads. • The device operation is based on modulating the (spin-) current by Rashba SOI. • Inverting alternating bias voltage to rectified spin-current is the main achievement

  6. Gate Engineering in SOI LDMOS for Device Reliability

    Directory of Open Access Journals (Sweden)

    Aanand

    2016-01-01

    Full Text Available A linearly graded doping drift region with step gate structure, used for improvement of reduced surface field (RESURF SOI LDMOS transistor performance has been simulated with 0.35µm technology in this paper. The proposed device has one poly gate and double metal gate arranged in a stepped manner, from channel to drift region. The first gate uses n+ poly (near source where as other two gates of aluminium. The first gate with thin gate oxide has good control over the channel charge. The third gate with thick gate oxide at drift region reduce gate to drain capacitance. The arrangement of second and third gates in a stepped manner in drift region spreads the electric field uniformly. Using two dimensional device simulations, the proposed SOI LDMOS is compared with conventional structure and the extended metal structure. We demonstrate that the proposed device exhibits significant enhancement in linearity, breakdown voltage, on-resistance and HCI. Double metal gate reduces the impact ionization area which helps to improve the Hot Carrier Injection effect..

  7. Generation and confinement of mobile charges in buried oxide of SOI substrates

    International Nuclear Information System (INIS)

    Gruber, O.; Krawiec, S.; Musseau, O.; Paillet, Ph.; Courtot-Descharles, A.

    1999-01-01

    We analyze the mechanisms of generation and confinement of mobile protons resulting from hydrogen annealing of SOI buried oxides. This study of the mechanisms of generation and confinement of mobile protons in the buried oxide of SOI wafers emphasizes the importance of H+ diffusion in the oxide in the formation of a mobile charge. Under specific electric field conditions the irradiation of these devices results in a pinning of this mobile charge at the bottom Si-SiO 2 interface. Ab initio calculations are in progress to investigate the possible precursor defects in the oxide and detail the mechanism for mobile proton generation and confinement. (authors)

  8. A technique for simultaneously improving the product of cutoff frequency-breakdown voltage and thermal stability of SOI SiGe HBT

    Science.gov (United States)

    Fu, Qiang; Zhang, Wan-Rong; Jin, Dong-Yue; Zhao, Yan-Xiao; Wang, Xiao

    2016-12-01

    The product of the cutoff frequency and breakdown voltage (fT×BVCEO) is an important figure of merit (FOM) to characterize overall performance of heterojunction bipolar transistor (HBT). In this paper, an approach to introducing a thin N+-buried layer into N collector region in silicon-on-insulator (SOI) SiGe HBT to simultaneously improve the FOM of fT×BVCEO and thermal stability is presented by using two-dimensional (2D) numerical simulation through SILVACO device simulator. Firstly, in order to show some disadvantages of the introduction of SOI structure, the effects of SOI insulation layer thickness (TBOX) on fT, BVCEO, and the FOM of fT×BVCEO are presented. The introduction of SOI structure remarkably reduces the electron concentration in collector region near SOI substrate insulation layer, obviously reduces fT, slightly increases BVCEO to some extent, but ultimately degrades the FOM of fT×BVCEO. Although the fT, BVCEO, and the FOM of fT×BVCEO can be improved by increasing SOI insulator SiO2 layer thickness TBOX in SOI structure, the device temperature and collector current are increased due to lower thermal conductivity of SiO2 layer, as a result, the self-heating effect of the device is enhanced, and the thermal stability of the device is degraded. Secondly, in order to alleviate the foregoing problem of low electron concentration in collector region near SOI insulation layer and the thermal stability resulting from thick TBOX, a thin N+-buried layer is introduced into collector region to not only improve the FOM of fT×BVCEO, but also weaken the self-heating effect of the device, thus improving the thermal stability of the device. Furthermore, the effect of the location of the thin N+-buried layer in collector region is investigated in detail. The result show that the FOM of fT×BVCEO is improved and the device temperature decreases as the N+-buried layer shifts toward SOI substrate insulation layer. The approach to introducing a thin N+-buried layer

  9. Anomalous radiation effects in fully depleted SOI MOSFETs fabricated on SIMOX

    Science.gov (United States)

    Li, Ying; Niu, Guofu; Cressler, J. D.; Patel, J.; Marshall, C. J.; Marshall, P. W.; Kim, H. S.; Reed, R. A.; Palmer, M. J.

    2001-12-01

    We investigate the proton tolerance of fully depleted silicon-on-insulator (SOI) MOSFETs with H-gate and regular-gate structural configurations. For the front-gate characteristics, the H-gate does not show the edge leakage observed in the regular-gate transistor. An anomalous kink in the back-gate linear I/sub D/-V/sub GS/ characteristics of the fully depleted SOI nFETs has been observed at high radiation doses. This kink is attributed to charged traps generated in the bandgap at the buried oxide/silicon film interface during irradiation. Extensive two-dimensional simulations with MEDICI were used to understand the physical origin of this kink. We also report unusual self-annealing effects in the devices when they are cooled to liquid nitrogen temperature.

  10. Le Parcours Étudiant du Festival Transamériques (FTA: une expérience de médiation culturelle marquante

    Directory of Open Access Journals (Sweden)

    Lucie

    2015-04-01

    Full Text Available Le but de cet article est de présenter les retombées éducatives du Parcours étudiant du FTA, consacré à la création contemporaine en théâtre et en danse au Québec. Une première enquête sur le terrain a été menée en 2010 auprès de 50 adolescents, suivie d’une autre, en 2014, afin de valider les résultats. La recherche nous révèle que l’évènement s’avère un rite de passage pour les jeunes ; il est source de découverte de soi tout autant qu’ouverture à l’altérité, et ce, tant au niveau de l’esthétique que sur les plans culturel et socio-politique.

  11. Le tourisme gay : aller ailleurs pour être soi-même ?

    Directory of Open Access Journals (Sweden)

    Emmanuel Jaurand

    2010-02-01

    Full Text Available L’orientation dominante des études sur le tourisme, longtemps marquées par l’importance de la dimension économique et par un désintérêt pour les questions touchant au corps, au sexe ou au genre, explique le silence autour du tourisme gay (qui n’est pas le tourisme des gays jusqu’aux années 1990. Pourtant, ce tourisme identitaire existe depuis longtemps et sa visibilité se développe, surtout dans les pays développés occidentaux. La métaphore du voyage et la recherche du paradis (sexuel perdu sont au cœur de l’identité homosexuelle depuis le 19 e siècle. Le tourisme gay se caractérise par des structures (tour-opérateurs, hébergements, croisières… et des destinations spécifiques. Pour les gays il s’agit, dans l’espace-temps des vacances, propice au relâchement et à la recréation de soi, de fuir un monde structuré par le système hétérosexiste et de rejoindre les autres (gays. La recherche de la rencontre du semblable et la sexualisation assumée du tourisme gay, à travers la libération et la dénudation des corps, participent d’une véritable quête pour valider son identité de gay. Elles font que les destinations préférées par les gays sont les stations balnéaires et les grandes villes : elles sont en effet dotées d’espaces publics, d’équipements commerciaux et de formes d’hébergement fermées favorables aux interactions et à la réalisation d’une éphémère « communauté gay ». The mainstream orientation of tourism studies, focused on the sole economic dimension for a long time, without any interest for questions about the body, sex or gender, explains the silence surrounding gay tourism (which is not the tourism of gay men since the 1990s. However, this identity tourism has existed for a long time and its visibility is growing, especially in Western developed countries. The metaphor of the journey and the search for a (sexual paradise lost have been at the core of the

  12. SOI Transistor measurement techniques using body contacted transistors

    International Nuclear Information System (INIS)

    Worley, E.R.; Williams, R.

    1989-01-01

    Measurements of body contacted SOI transistors are used to isolate parameters of the back channel and island edge transistor. Properties of the edge and back channel transistor have been measured before and after X-ray irradiation (ARACOR). The unique properties of the edge transistor are shown to be a result of edge geometry as confirmed by a two dimensional transistor simulator

  13. Performance of an SOI Boot-Strapped Full-Bridge MOSFET Driver, Type CHT-FBDR, under Extreme Temperatures

    Science.gov (United States)

    Patterson, Richard; Hammoud, Ahmad

    2009-01-01

    Electronic systems designed for use in deep space and planetary exploration missions are expected to encounter extreme temperatures and wide thermal swings. Silicon-based devices are limited in their wide-temperature capability and usually require extra measures, such as cooling or heating mechanisms, to provide adequate ambient temperature for proper operation. Silicon-On-Insulator (SOI) technology, on the other hand, lately has been gaining wide spread use in applications where high temperatures are encountered. Due to their inherent design, SOI-based integrated circuit chips are able to operate at temperatures higher than those of the silicon devices by virtue of reducing leakage currents, eliminating parasitic junctions, and limiting internal heating. In addition, SOI devices provide faster switching, consume less power, and offer improved radiation-tolerance. Very little data, however, exist on the performance of such devices and circuits under cryogenic temperatures. In this work, the performance of an SOI bootstrapped, full-bridge driver integrated circuit was evaluated under extreme temperatures and thermal cycling. The investigations were carried out to establish a baseline on the functionality and to determine suitability of this device for use in space exploration missions under extreme temperature conditions.

  14. A high efficiency lateral light emitting device on SOI

    NARCIS (Netherlands)

    Hoang, T.; Le Minh, P.; Holleman, J.; Zieren, V.; Goossens, M.J.; Schmitz, Jurriaan

    2005-01-01

    The infrared light emission of lateral p/sup +/-p-n/sup +/ diodes realized on SIMOX-SOI (separation by implantation of oxygen - silicon on insulator) substrates has been studied. The confinement of the free carriers in one dimension due to the buried oxide was suggested to be a key point to increase

  15. Split-Capacitance and Conductance-Frequency Characteristics of SOI Wafers in Pseudo-MOSFET Configuration

    KAUST Repository

    Pirro, Luca

    2015-09-01

    Recent experimental results have demonstrated the possibility of characterizing silicon-on-insulator (SOI) wafers through split C-V measurements in the pseudo-MOSFET configuration. This paper analyzes the capacitance and conductance versus frequency characteristics. We discuss the conditions under which it is possible to extract interface trap density in bare SOI wafers. The results indicate, through both measurements and simulations, that the signature due to interface trap density is present in small-area samples, but is masked by the RC response of the channel in regular, large-area ones, making the extraction in standard samples problematic. © 1963-2012 IEEE.

  16. Split-Capacitance and Conductance-Frequency Characteristics of SOI Wafers in Pseudo-MOSFET Configuration

    KAUST Repository

    Pirro, Luca; Diab, Amer El Hajj; Ionica, Irina; Ghibaudo, Gerard; Faraone, Lorenzo; Cristoloveanu, Sorin

    2015-01-01

    Recent experimental results have demonstrated the possibility of characterizing silicon-on-insulator (SOI) wafers through split C-V measurements in the pseudo-MOSFET configuration. This paper analyzes the capacitance and conductance versus frequency characteristics. We discuss the conditions under which it is possible to extract interface trap density in bare SOI wafers. The results indicate, through both measurements and simulations, that the signature due to interface trap density is present in small-area samples, but is masked by the RC response of the channel in regular, large-area ones, making the extraction in standard samples problematic. © 1963-2012 IEEE.

  17. Low-Power RF SOI-CMOS Technology for Distributed Sensor Networks

    Science.gov (United States)

    Dogan, Numan S.

    2003-01-01

    The objective of this work is to design and develop Low-Power RF SOI-CMOS Technology for Distributed Sensor Networks. We briefly report on the accomplishments in this work. We also list the impact of this work on graduate student research training/involvement.

  18. Process Optimization for Monolithic Integration of Piezoresistive Pressure Sensor and MOSFET Amplifier with SOI Approach

    International Nuclear Information System (INIS)

    Kumar, V Vinoth; Dasgupta, A; Bhat, K N; KNatarajan

    2006-01-01

    In this paper we present the design and process optimization for fabricating piezoresitive pressure sensor and MOSFET Differential Amplifier simultaneously on the same chip. Silicon On Insulator approach has been used for realizing the membrane as well as the electronics on the same chip. The amplifier circuit has been configured in the common source connection and it has been designed with PSPICE simulation to achieve a voltage gain of about 5. In the initial set of experiments the Pressure sensor and the amplifier were fabricated on separate chips to optimize the process steps and tested in the hybrid mode. In the next set of experiments, SOI wafer having the SOI layer thickness of about 11 microns was used for realizing the membrane by anisotropic etching from the backside. The piezo-resistive pressure sensor was realized on this membrane by connecting the polysilicon resistors in the form of a Wheatstone bridge. The MOSFET source follower amplifier was also fabricated on the same SOI wafer by tailoring the process steps to suit the requirement of simultaneous fabrication of piezoresistors and the amplifier for achieving MOSFET Integrated Pressure Sensor. Reproducible results have been achieved on the SOI wafers, with the process steps developed in the laboratory. Sensitivity of 270 mV /Bar/10V, with the on chip amplifier gain of 4.5, has been achieved with this process

  19. Efficient strategy to Cu/Si catalyst into vertically aligned carbon ...

    Indian Academy of Sciences (India)

    Abstract. Bamboo-shaped vertically aligned carbon nanotubes (bs-VACNTs) were fabricated on Cu/Si catalyst by ... on Si wafer material when compared to the other commer- ..... [3] Li H, Zhao N, He C, Shi C, Du X, Li J and Cui Q 2008 Mater.

  20. Silicon-on-insulator (SOI) active pixel sensors with the photosite implemented in the substrate

    Science.gov (United States)

    Zheng, Xinyu (Inventor); Pain, Bedabrata (Inventor)

    2005-01-01

    Active pixel sensors for a high quality imager are fabricated using a silicon-on-insulator (SOI) process by integrating the photodetectors on the SOI substrate and forming pixel readout transistors on the SOI thin-film. The technique can include forming silicon islands on a buried insulator layer disposed on a silicon substrate and selectively etching away the buried insulator layer over a region of the substrate to define a photodetector area. Dopants of a first conductivity type are implanted to form a signal node in the photodetector area and to form simultaneously drain/source regions for a first transistor in at least a first one of the silicon islands. Dopants of a second conductivity type are implanted to form drain/source regions for a second transistor in at least a second one of the silicon islands. Isolation rings around the photodetector also can be formed when dopants of the second conductivity type are implanted. Interconnections among the transistors and the photodetector are provided to allow signals sensed by the photodetector to be read out via the transistors formed on the silicon islands.

  1. A low on-resistance SOI LDMOS using a trench gate and a recessed drain

    International Nuclear Information System (INIS)

    Ge Rui; Luo Xiaorong; Jiang Yongheng; Zhou Kun; Wang Pei; Wang Qi; Wang Yuangang; Zhang Bo; Li Zhaoji

    2012-01-01

    An integrable silicon-on-insulator (SOI) power lateral MOSFET with a trench gate and a recessed drain (TGRD MOSFET) is proposed to reduce the on-resistance. Both of the trench gate extended to the buried oxide (BOX) and the recessed drain reduce the specific on-resistance (R on,sp ) by widening the vertical conduction area and shortening the extra current path. The trench gate is extended as a field plate improves the electric field distribution. Breakdown voltage (BV) of 97 V and R on,sp of 0.985 mΩ·cm 2 (V GS = 5 V) are obtained for a TGRD MOSFET with 6.5 μm half-cell pitch. Compared with the trench gate SOI MOSFET (TG MOSFET) and the conventional MOSFET, R on,sp of the TGRD MOSFET decreases by 46% and 83% at the same BV, respectively. Compared with the SOI MOSFET with a trench gate and a trench drain (TGTD MOSFET), BV of the TGRD MOSFET increases by 37% at the same R on,sp . (semiconductor devices)

  2. Fully etched apodized grating coupler on the SOI platform with −058 dB coupling efficiency

    DEFF Research Database (Denmark)

    Ding, Yunhong; Peucheret, Christophe; Ou, Haiyan

    2014-01-01

    We design and fabricate an ultrahigh coupling efficiency (CE) fully etched apodized grating coupler on the silicon- on-insulator (SOI) platform using subwavelength photonic crystals and bonded aluminum mirror. Fabrication error sensitivity andcoupling angle dependence are experimentally investiga......We design and fabricate an ultrahigh coupling efficiency (CE) fully etched apodized grating coupler on the silicon- on-insulator (SOI) platform using subwavelength photonic crystals and bonded aluminum mirror. Fabrication error sensitivity andcoupling angle dependence are experimentally...

  3. A monolithic pixel sensor (TRAPPISTe-2) for particle physics instrumentation in OKI 0.2μm SOI technology

    Science.gov (United States)

    Soung Yee, L.; Alvarez, P.; Martin, E.; Cortina, E.; Ferrer, C.

    2012-12-01

    A monolithic active pixel sensor for charged particle tracking has been developed within the frame of a research and development project called TRAPPISTe (Tracking Particles for Physics Instrumentation in SOI Technology). TRAPPISTe aims to study the feasibility of developing a monolithic pixel sensor with SOI technology. TRAPPISTe-2 is the second prototype in this series and was fabricated with an OKI 0.20μm fully depleted (FD-SOI) CMOS process. This device contains test transistors and amplifiers, as well as two pixel matrices with integrated 3-transistor and amplifier readout electronics. The results presented are based on the first electrical measurements performed on the test structures and laser measurements on the pixel matrices.

  4. A new SOI high-voltage device with a step-thickness drift region and its analytical model for the electric field and breakdown voltage

    International Nuclear Information System (INIS)

    Luo Xiaorong; Zhang Wei; Zhang Bo; Li Zhaoji; Yang Shouguo; Zhan Zhan; Fu Daping

    2008-01-01

    A new SOI high-voltage device with a step-thickness drift region (ST SOI) and its analytical model for the two-dimension electric field distribution and the breakdown voltage are proposed. The electric field in the drift region is modulated and that of the buried layer is enhanced by the variable thickness SOI layer, thereby resulting in the enhancement of the breakdown voltage. Based on the Poisson equation, the expression for the two-dimension electric field distribution is presented taking the modulation effect into account, from which the RESURF (REduced SURface Field) condition and the approximate but explicit expression for the maximal breakdown voltage are derived. The analytical model can explain the effects of the device parameters, such as the step height and the step length of the SOI layer, the doping concentration and the buried oxide thickness, on the electric field distribution and the breakdown voltage. The validity of this model is demonstrated by a comparison with numerical simulations. Improvement on both the breakdown voltage and the on-resistance (R on ) for the ST SOI is obtained due to the variable thickness SOI layer

  5. Influence of edge effects on single event upset susceptibility of SOI SRAMs

    International Nuclear Information System (INIS)

    Gu, Song; Liu, Jie; Zhao, Fazhan; Zhang, Zhangang; Bi, Jinshun; Geng, Chao; Hou, Mingdong; Liu, Gang; Liu, Tianqi; Xi, Kai

    2015-01-01

    An experimental investigation of the single event upset (SEU) susceptibility for heavy ions at tilted incidence was performed. The differences of SEU cross-sections between tilted incidence and normal incidence at equivalent effective linear energy transfer were 21% and 57% for the silicon-on-insulator (SOI) static random access memories (SRAMs) of 0.5 μm and 0.18 μm feature size, respectively. The difference of SEU cross-section raised dramatically with increasing tilt angle for SOI SRAM of deep-submicron technology. The result of CRÈME-MC simulation for tilted irradiation of the sensitive volume indicates that the energy deposition spectrum has a substantial tail extending into the low energy region. The experimental results show that the influence of edge effects on SEU susceptibility cannot be ignored in particular with device scaling down

  6. De Profundis d’Oscar Wilde: la quête d’identité du dandy en prison

    Directory of Open Access Journals (Sweden)

    2010-02-01

    Full Text Available Plus d’un siècle après sa mort, Oscar Wilde continue de susciter l’intérêt tant pour son œuvre que pour sa vie. Dandy toute sa vie, d’une taille hors du commun, ce n’est pas seulement l’artiste mais aussi l’homme qui a marqué son siècle et continue d’enthousiasmer le lecteur du vingt-et-unième siècle. (... L’écriture de soi en souffrance, comme nous le voyons à travers De Profundis, aboutit à la preuve que son génie artistique est intact. (... L’écriture combat la souffrance de l’isolation et de la déchéance, mais dans le cas de Wilde, c’est également le moyen de se reconstruire en tant qu’homme et en tant qu’artiste: il n’a plus de nom, plus de reconnaissance par les hommes, mais le texte, que Wilde l’ai pensé ou non, est une nouvelle œuvre d’art qui montre la capacité et la force de l’esprit en condition d’oppression.

  7. La traversée de l'Atlantique ou la mort ? Une réflexion critique sur la ...

    African Journals Online (AJOL)

    19 mars 2018 ... physique et naturel, trouvera une interprétation figurative dans cet article. Il s'agit ... Il va de soi que dans certaines ... soi dans la vision du monde d'un sujet. ..... Cependant en terme de créolisation, Glissant estime que: “La ...

  8. An SOI CMOS-Based Multi-Sensor MEMS Chip for Fluidic Applications.

    Science.gov (United States)

    Mansoor, Mohtashim; Haneef, Ibraheem; Akhtar, Suhail; Rafiq, Muhammad Aftab; De Luca, Andrea; Ali, Syed Zeeshan; Udrea, Florin

    2016-11-04

    An SOI CMOS multi-sensor MEMS chip, which can simultaneously measure temperature, pressure and flow rate, has been reported. The multi-sensor chip has been designed keeping in view the requirements of researchers interested in experimental fluid dynamics. The chip contains ten thermodiodes (temperature sensors), a piezoresistive-type pressure sensor and nine hot film-based flow rate sensors fabricated within the oxide layer of the SOI wafers. The silicon dioxide layers with embedded sensors are relieved from the substrate as membranes with the help of a single DRIE step after chip fabrication from a commercial CMOS foundry. Very dense sensor packing per unit area of the chip has been enabled by using technologies/processes like SOI, CMOS and DRIE. Independent apparatuses were used for the characterization of each sensor. With a drive current of 10 µA-0.1 µA, the thermodiodes exhibited sensitivities of 1.41 mV/°C-1.79 mV/°C in the range 20-300 °C. The sensitivity of the pressure sensor was 0.0686 mV/(V excit kPa) with a non-linearity of 0.25% between 0 and 69 kPa above ambient pressure. Packaged in a micro-channel, the flow rate sensor has a linearized sensitivity of 17.3 mV/(L/min) -0.1 in the tested range of 0-4.7 L/min. The multi-sensor chip can be used for simultaneous measurement of fluid pressure, temperature and flow rate in fluidic experiments and aerospace/automotive/biomedical/process industries.

  9. Dimensional effects and scalability of Meta-Stable Dip (MSD) memory effect for 1T-DRAM SOI MOSFETs

    Science.gov (United States)

    Hubert, A.; Bawedin, M.; Cristoloveanu, S.; Ernst, T.

    2009-12-01

    The difficult scaling of bulk Dynamic Random Access Memories (DRAMs) has led to various concepts of capacitor-less single-transistor (1T) architectures based on SOI transistor floating-body effects. Amongst them, the Meta-Stable Dip RAM (MSDRAM), which is a double-gate Fully Depleted SOI transistor, exhibits attractive performances. The Meta-Stable Dip effect results from the reduced junction leakage current and the long carrier generation lifetime in thin silicon film transistors. In this study, various devices with different gate lengths, widths and silicon film thicknesses have been systematically explored, revealing the impact of transistor dimensions on the MSD effect. These experimental results are discussed and validated by two-dimensional numerical simulations. It is found that MSD is maintained for small dimensions even in standard SOI MOSFETs, although specific optimizations are expected to enhance MSDRAM performances.

  10. Analyses of the radiation-caused characteristics change in SOI MOSFETs using field shield isolation

    International Nuclear Information System (INIS)

    Hirano, Yuuichi; Maeda, Shigeru; Fernandez, Warren; Iwamatsu, Toshiaki; Yamaguchi, Yasuo; Maegawa, Shigeto; Nishimura, Tadashi

    1999-01-01

    Reliability against radiation ia an important issue in silicon on insulator metal oxide semiconductor field effect transistors (SOI MOSFETs) used in satellites and nuclear power plants and so forth which are severely exposed to radiation. Radiation-caused characteristic change related to the isolation-edge in an irradiated environment was analyzed on SOI MOSFETs. Moreover short channel effects for an irradiated environment were investigated by simulations. It was revealed that the leakage current which was observed in local oxidation of silicon (LOCOS) isolated SOI MOSFETs was successfully suppressed by using field shield isolation. Simulated potential indicated that the potential rise at the LOCOS edge can not be seen in the case of field shield isolation edge which does not have physical isolation. Also it was found that the threshold voltage shift caused by radiation in short channel regime is severer than that in long regime channel. In transistors with a channel length of 0.18μm, a potential rise of the body region by radiation-induced trapped holes can be seen in comparison with that of 1.0μm. As a result, we must consider these effects for designing deep submicron devices used in an irradiated environment. (author)

  11. Density dependence of electron mobility in the accumulation mode for fully depleted SOI films

    Energy Technology Data Exchange (ETDEWEB)

    Naumova, O. V., E-mail: naumova@isp.nsc.ru; Zaitseva, E. G.; Fomin, B. I.; Ilnitsky, M. A.; Popov, V. P. [Russian Academy of Sciences, Rzhanov Institute of Semiconductor Physics, Siberian Branch (Russian Federation)

    2015-10-15

    The electron mobility µ{sub eff} in the accumulation mode is investigated for undepleted and fully depleted double-gate n{sup +}–n–n{sup +} silicon-on-insulator (SOI) metal–oxide–semiconductor field-effect transistors (MOSFET). To determine the range of possible values of the mobility and the dominant scattering mechanisms in thin-film structures, it is proposed that the field dependence of the mobility µ{sub eff} be replaced with the dependence on the density N{sub e} of induced charge carriers. It is shown that the dependences µ{sub eff}(N{sub e}) can be approximated by the power functions µ{sub eff}(N{sub e}) ∝ N{sub e}{sup -n}, where the exponent n is determined by the chargecarrier scattering mechanism as in the mobility field dependence. The values of the exponent n in the dependences µ{sub eff}(N{sub e}) are determined when the SOI-film mode near one of its surfaces varies from inversion to accumulation. The obtained results are explained from the viewpoint of the electron-density redistribution over the SOI-film thickness and changes in the scattering mechanisms.

  12. New Insights into Fully-Depleted SOI Transistor Response During Total Dose Irradiation

    International Nuclear Information System (INIS)

    Burns, J.A.; Dodd, P.E.; Keast, C.L.; Schwank, J.R.; Shaneyfelt, M.R.; Wyatt, P.W.

    1999-01-01

    Worst-case bias configuration for total-dose testing fully-depleted SOI transistors was found to be process dependent. No evidence was found for total-dose induced snap back. These results have implications for hardness assurance testing

  13. HARM processing techniques for MEMS and MOEMS devices using bonded SOI substrates and DRIE

    Science.gov (United States)

    Gormley, Colin; Boyle, Anne; Srigengan, Viji; Blackstone, Scott C.

    2000-08-01

    Silicon-on-Insulator (SOI) MEMS devices (1) are rapidly gaining popularity in realizing numerous solutions for MEMS, especially in the optical and inertia application fields. BCO recently developed a DRIE trench etch, utilizing the Bosch process, and refill process for high voltage dielectric isolation integrated circuits on thick SOI substrates. In this paper we present our most recently developed DRIE processes for MEMS and MOEMS devices. These advanced etch techniques are initially described and their integration with silicon bonding demonstrated. This has enabled process flows that are currently being utilized to develop optical router and filter products for fiber optics telecommunications and high precision accelerometers.

  14. Electrical activation of solid-phase epitaxially regrown ultra-low energy boron implants in Ge preamorphised silicon and SOI

    International Nuclear Information System (INIS)

    Hamilton, J.J.; Collart, E.J.H.; Colombeau, B.; Jeynes, C.; Bersani, M.; Giubertoni, D.; Sharp, J.A.; Cowern, N.E.B.; Kirkby, K.J.

    2005-01-01

    The formation of highly activated ultra-shallow junctions (USJ) is one of the key requirements for the next generation of CMOS devices. One promising method for achieving this is the use of Ge preamorphising implants (PAI) prior to ultra-low energy B implantation. In future technology nodes, bulk silicon wafers may be supplanted by Silicon-on-Insulator (SOI), and an understanding of the Solid Phase Epitaxial (SPE) regrowth process and its correlation to dopant electrical activation in both bulk silicon and SOI is essential in order to understand the impact of this potential technology change. This kind of understanding will also enable tests of fundamental models for defect evolution and point-defect reactions at silicon/oxide interfaces. In the present work, B is implanted into Ge PAI silicon and SOI wafers with different PAI conditions and B doses, and resulting samples are annealed at various temperatures and times. Glancing-exit Rutherford Backscattering Spectrometry (RBS) is used to monitor the regrowth of the amorphous silicon, and the resulting redistribution and electrical activity of B are monitored by SIMS and Hall measurements. The results confirm the expected enhancement of regrowth velocity by B doping, and show that this velocity is otherwise independent of the substrate type and the Ge implant distribution within the amorphised layer. Hall measurements on isochronally annealed samples show that B deactivates less in SOI material than in bulk silicon, in cases where the Ge PAI end-of-range defects are close to the SOI back interface

  15. Superconducting nanowire single-photon detectors (SNSPDs) on SOI for near-infrared range

    Energy Technology Data Exchange (ETDEWEB)

    Trojan, Philipp; Il' in, Konstantin; Henrich, Dagmar; Hofherr, Matthias; Doerner, Steffen; Siegel, Michael [Institut fuer Mikro- und Nanoelektronische Systeme (IMS), Karlsruher Institut fuer Technologie (KIT) (Germany); Semenov, Alexey [Institut fuer Planetenforschung, DLR, Berlin-Adlershof (Germany); Huebers, Heinz-Wilhelm [Institut fuer Planetenforschung, DLR, Berlin-Adlershof (Germany); Institut fuer Optik und Atomare Physik, Technische Universitaet Berlin (Germany)

    2013-07-01

    Superconducting nanowire single-photon detectors are promising devices for photon detectors with high count rates, low dark count rates and low dead times. At wavelengths beyond the visible range, the detection efficiency of today's SNSPDs drops significantly. Moreover, the low absorption in ultra-thin detector films is a limiting factor over the entire spectral range. Solving this problem requires approaches for an enhancement of the absorption range in feeding the light to the detector element. A possibility to obtain a better absorption is the use of multilayer substrate materials for photonic waveguide structures. We present results on development of superconducting nanowire single-photon detectors made from niobium nitride on silicon-on-insulator (SOI) multilayer substrates. Optical and superconducting properties of SNSPDs on SOI will be discussed and compared with the characteristics of detectors on common substrates.

  16. The effect of gate length on SOI-MOSFETS operation | Baedi ...

    African Journals Online (AJOL)

    The effect of gate length on the operation of silicon-on-insulator (SOI) MOSFET structure with a layer of buried silicon oxide added to isolate the device body has been simulated. Three transistors with gate lengths of 100, 200 and 500 nm were simulated. Simulations showed that with a fixed channel length, when the gate ...

  17. Design and optimization of different P-channel LUDMOS architectures on a 0.18 µm SOI-CMOS technology

    International Nuclear Information System (INIS)

    Cortés, I; Toulon, G; Morancho, F; Hugonnard-Bruyere, E; Villard, B; Toren, W J

    2011-01-01

    This paper focuses on the design and optimization of different power P-channel LDMOS transistors (V BR > 120 V) to be integrated in a new generation of smart-power technology based upon a 0.18 µm SOI-CMOS technology. Different drift architectures have been envisaged in this work with the purpose of optimizing the transistor static (R on-sp /V BR trade-off) and dynamic (R on × Q g ) characteristics to improve their switching performance. Conventional single-RESURF P-channel LUDMOS architectures on thin-SOI substrates show very poor R on-sp /V BR trade-off due to their low RESURF effectiveness. Alternative drift configurations such as the addition of an N-type buried layer deep inside the SOI layer or the application of the superjunction concept by alternatively placing stacked P- and N-type pillars could highly improve the RESURF effectiveness and the P-channel device switching performance

  18. Une affaire de générations : la construction d’un entre-soi à l’épreuve de la mixité intergénérationnelle.

    Directory of Open Access Journals (Sweden)

    François Madoré

    2010-06-01

    Full Text Available Depuis les années 2000 en France, un nouveau type d’environnement résidentiel sécurisé (et souvent fermé mais pas de façon systématique se développe, incarné par les multiples figures du village senior. Ce phénomène soulève l’hypothèse d’une transposition d’un modèle d’entre-soi générationnel des États-Unis, où, dès les années 1950, des retirement communities ou active adults communities sont apparues, qui ont depuis proliféré vers la France. Il pose aussi la question de la construction d’un entre-soi et de sa confrontation à la mixité mais aussi à l’altérité. C’est cette interrogation qui sous-tend cet article. Celui-ci observe les modes d’habiter dans une résidence construite à l’origine exclusivement pour les seniors mais ouverte depuis à des ménages plus jeunes pour combattre la vacance d’une partie des logements. Il s’agit de la Villa Vermeil de Biscarrosse (Landes, complexe résidentiel fermé avec contrôle des accès, composé d’une résidence locative de 108 maisons gérée par le groupe Omnium Finance. Des entretiens longs et semi-directifs ont été conduits en 2008 auprès de résidants de cet ensemble d’habitat et du gestionnaire du club Villa Vermeil. Cette méthode permet de faire émerger les discours d’existence, donnant accès aux images et aux représentations des habitants dans la construction de leur rapport à l’habiter. L’intérêt de cette approche monographique est de bien illustrer la façon dont peut se construire ou non l’entre-soi générationnel et le rapport aux autres classes d’âge, dans un contexte où la mixité intergénérationnelle, étrangère à la conception du projet, a été imposée « après coup », ce qui n’est pas toujours bien perçu par les seniors, loin s’en faut, certains vivant cette mixité imposée comme une trahison et en décalage avec ce qu’ils étaient venus chercher en s’installant dans ce lieu. Since the

  19. A new partial SOI-LDMOSFET with a modified buried oxide layer for improving self-heating and breakdown voltage

    International Nuclear Information System (INIS)

    Jamali Mahabadi, S E; Orouji, Ali A; Keshavarzi, P; Moghadam, Hamid Amini

    2011-01-01

    In this paper, for the first time, we propose a partial silicon-on-insulator (P-SOI) lateral double-diffused metal-oxide-semiconductor-field-effect-transistor (LDMOSFET) with a modified buried layer in order to improve breakdown voltage (BV) and self-heating effects (SHEs). The main idea of this work is to control the electric field by shaping the buried layer. With two steps introduced in the buried layer, the electric field distribution is modified. Also a P-type window introduced makes the substrate share the vertical voltage drop, leading to a high vertical BV. Moreover, four interface electric field peaks are introduced by the buried P-layer, the Si window and two steps, which modulate the electric field in the SOI layer and the substrate. Hence, a more uniform electric field is obtained; consequently, a high BV is achieved. Furthermore, the Si window creates a conduction path between the active layer and substrate and alleviates the SHE. Two-dimensional simulations show that the BV of double step partial silicon on insulator is nearly 69% higher and alleviates SHEs 17% in comparison with its single step partial SOI counterpart and nearly 265% higher and alleviate SHEs 18% in comparison with its conventional SOI counterpart

  20. A 680 V LDMOS on a thin SOI with an improved field oxide structure and dual field plate

    International Nuclear Information System (INIS)

    Wang Zhongjian; Cheng Xinhong; Xia Chao; Xu Dawei; Cao Duo; Song Zhaorui; Yu Yuehui; Shen Dashen

    2012-01-01

    A 680 V LDMOS on a thin SOI with an improved field oxide (FOX) and dual field plate was studied experimentally. The FOX structure was formed by an 'oxidation-etch-oxidation' process, which took much less time to form, and had a low protrusion profile. A polysilicon field plate extended to the FOX and a long metal field plate was used to improve the specific on-resistance. An optimized drift region implant for linear-gradient doping was adopted to achieve a uniform lateral electric field. Using a SimBond SOI wafer with a 1.5 μm top silicon and a 3 μm buried oxide layer, CMOS compatible SOI LDMOS processes are designed and implemented successfully. The off-state breakdown voltage reached 680 V, and the specific on-resistance was 8.2 Ω·mm 2 . (semiconductor devices)

  1. Research on SOI-based micro-resonator devices

    Science.gov (United States)

    Xiao, Xi; Xu, Haihua; Hu, Yingtao; Zhou, Liang; Xiong, Kang; Li, Zhiyong; Li, Yuntao; Fan, Zhongchao; Han, Weihua; Yu, Yude; Yu, Jinzhong

    2010-10-01

    SOI (silicon-on-insulator)-based micro-resonator is the key building block of silicon photonics, which is considered as a promising solution to alleviate the bandwidth bottleneck of on-chip interconnects. Silicon-based sub-micron waveguide, microring and microdisk devices are investigated in Institute of Semiconductors, Chinese Academy of Sciences. The main progress in recent years is presented in this talk, such as high Q factor single mode microdisk filters, compact thirdorder microring filters with the through/drop port extinctions to be ~ 30/40 dB, fast microring electro-optical switches with the switch time of 10 Gbit/s high speed microring modulators.

  2. Total dose radiation effects of pressure sensors fabricated on uni-bond-SOI materials

    International Nuclear Information System (INIS)

    Zhu Shiyang; Huang Yiping; Wang Jin; Li Anzhen; Shen Shaoqun; Bao Minhang

    2001-01-01

    Piezoresistive pressure sensors with a twin-island structure were successfully fabricated using high quality Uni-bond-SOI (On Insulator) materials. Since the piezoresistors were structured by the single crystalline silicon overlayer of the SOI wafer and were totally isolated by the buried SiO 2 , the sensors are radiation-hard. The sensitivity and the linearity of the pressure sensors keep their original values after being irradiated by 60 Co γ-rays up to 2.3 x 10 4 Gy(H 2 O). However, the offset voltage of the sensor has a slight drift, increasing with the radiation dose. The absolute value of the offset voltage deviation depends on the pressure sensor itself. For comparison, corresponding polysilicon pressure sensors were fabricated using the similar process and irradiated at the same condition

  3. Electrical properties and radiation hardness of SOI systems with multilayer buried dielectric

    International Nuclear Information System (INIS)

    Barchuk, I.P.; Kilchitskaya, V.I.; Lysenko, V.S.

    1997-01-01

    In this work SOI structures with buried SiO 2 -Si 3 N 4 -SiO 2 layers have been fabricated by the ZMR-technique with the aim of improving the total dose radiation hardness of the buried dielectric layer. To optimize the fabrication process, buried layers were investigated by secondary ion mass spectrometry before and after the ZMR process, and the obtained results were compared with electrical measurements. It is shown that optimization of the preparation processes of the initial buried dielectric layers provides ZMR SOI structures with multilayer buried isolation, which are of high quality for both Si film interfaces. Particular attention is paid to the investigation of radiation-induced charge trapping in buried insulators. Buried isolation structures with a nitride layer exhibit significant reduction of radiation-induced positive charge as compared to classical buried SiO 2 layers produced by either the ZMR or the SIMOX technique

  4. New insights into fully-depleted SOI transistor response during total-dose irradiation

    International Nuclear Information System (INIS)

    Schwank, J.R.; Shaneyfelt, M.R.; Dodd, P.E.; Burns, J.A.; Keast, C.L.; Wyatt, P.W.

    1999-01-01

    In this paper, we present irradiation results on 2-fully depleted processes (HYSOI6, RKSOI) that show SOI (silicon on insulator) device response can be more complicated than originally suggested by others. The major difference between the 2 process versions is that the RKSOI process incorporates special techniques to minimize pre-irradiation parasitic leakage current from trench sidewalls. Transistors were irradiated at room temperature using 10 keV X-ray source. Worst-case bias configuration for total-dose testing fully-depleted SOI transistors was found to be process dependent. It appears that the worst-case bias for HYPOI6 process is the bias that causes the largest increase in sidewall leakage. The RKSOI process shows a different response during irradiation, the transition response appears to be dominated by charge trapping in the buried oxide. These results have implications for hardness assurance testing. (A.C.)

  5. Novel technique of source and drain engineering for dual-material double-gate (DMDG) SOI MOSFETS

    Science.gov (United States)

    Yadav, Himanshu; Malviya, Abhishek Kumar; Chauhan, R. K.

    2018-04-01

    The dual-metal dual-gate (DMDG) SOI has been used with Dual Sided Source and Drain Engineered 50nm SOI MOSFET with various high-k gate oxide. It has been scrutinized in this work to enhance its electrical performance. The proposed structure is designed by creating Dual Sided Source and Drain Modification and its characteristics are evaluated on ATLAS device simulator. The consequence of this dual sided assorted doping on source and drain side of the DMDG transistor has better leakage current immunity and heightened ION current with higher ION to IOFF Ratio. Which thereby vesting the proposed device appropriate for low power digital applications.

  6. Development of a pixel sensor with fine space-time resolution based on SOI technology for the ILC vertex detector

    Energy Technology Data Exchange (ETDEWEB)

    Ono, Shun, E-mail: s-ono@champ.hep.sci.osaka-u.ac.jp [Osaka University, 1-1 Machikaneyama, Toyonaka (Japan); Togawa, Manabu; Tsuji, Ryoji; Mori, Teppei [Osaka University, 1-1 Machikaneyama, Toyonaka (Japan); Yamada, Miho; Arai, Yasuo; Tsuboyama, Toru; Hanagaki, Kazunori [Institute of Particle and Nuclear Studies, High Energy Accelerator Research Org. (KEK), 1-1 Oho, Tsukuba (Japan)

    2017-02-11

    We have been developing a new monolithic pixel sensor with silicon-on-insulator (SOI) technology for the International Linear Collider (ILC) vertex detector system. The SOI monolithic pixel detector is realized using standard CMOS circuits fabricated on a fully depleted sensor layer. The new SOI sensor SOFIST can store both the position and timing information of charged particles in each 20×20 μm{sup 2} pixel. The position resolution is further improved by the position weighted with the charges spread to multiple pixels. The pixel also records the hit timing with an embedded time-stamp circuit. The sensor chip has column-parallel analog-to-digital conversion (ADC) circuits and zero-suppression logic for high-speed data readout. We are designing and evaluating some prototype sensor chips for optimizing and minimizing the pixel circuit.

  7. An SOI CMOS-Based Multi-Sensor MEMS Chip for Fluidic Applications †

    Science.gov (United States)

    Mansoor, Mohtashim; Haneef, Ibraheem; Akhtar, Suhail; Rafiq, Muhammad Aftab; De Luca, Andrea; Ali, Syed Zeeshan; Udrea, Florin

    2016-01-01

    An SOI CMOS multi-sensor MEMS chip, which can simultaneously measure temperature, pressure and flow rate, has been reported. The multi-sensor chip has been designed keeping in view the requirements of researchers interested in experimental fluid dynamics. The chip contains ten thermodiodes (temperature sensors), a piezoresistive-type pressure sensor and nine hot film-based flow rate sensors fabricated within the oxide layer of the SOI wafers. The silicon dioxide layers with embedded sensors are relieved from the substrate as membranes with the help of a single DRIE step after chip fabrication from a commercial CMOS foundry. Very dense sensor packing per unit area of the chip has been enabled by using technologies/processes like SOI, CMOS and DRIE. Independent apparatuses were used for the characterization of each sensor. With a drive current of 10 µA–0.1 µA, the thermodiodes exhibited sensitivities of 1.41 mV/°C–1.79 mV/°C in the range 20–300 °C. The sensitivity of the pressure sensor was 0.0686 mV/(Vexcit kPa) with a non-linearity of 0.25% between 0 and 69 kPa above ambient pressure. Packaged in a micro-channel, the flow rate sensor has a linearized sensitivity of 17.3 mV/(L/min)−0.1 in the tested range of 0–4.7 L/min. The multi-sensor chip can be used for simultaneous measurement of fluid pressure, temperature and flow rate in fluidic experiments and aerospace/automotive/biomedical/process industries. PMID:27827904

  8. « Le sac d’école électronique »: un outil technologique pouvant faciliter la mise en place de l’alignement curriculaire / The “digital school bag”: A technological tool to facilitate the implementation of curriculum alignment

    Directory of Open Access Journals (Sweden)

    Marie-Pierrette Ntyonga-Pono

    2012-07-01

    Full Text Available Cet article discute des réformes du système éducatif québécois qui s’inscrivent dans le courant des réformes entreprises un peu partout dans le monde avec des résultats variables. Plusieurs facteurs sont évoqués parmi lesquels le manque de formation et de soutien des enseignants, malgré les actions du ministère de l’Éducation, du Loisir et du Sport du Québec qui a confié la recherche de moyens de soutien à différents organismes dont la Maison des technologies de formation et d'apprentissage Roland-Giguère (MATI Montréal qui a conçu un logiciel «le sac d’école» peu connu et utilisé. Le but de cet article est de présenter cet outil technologique et comment il peut permettre d’atteindre l’alignement curriculaire, élément clé de toute réussite de réforme éducative. This paper discusses the education-system reforms in Quebec, which follow the same trends as reforms undertaken elsewhere in the world with various results. Several factors are invoked, among which is the lack of training and support for teachers despite the efforts of Quebec’s Ministère de l’Éducation, du Loisir et du Sport, which assigned various organizations to looks into support methods. These organizations included the Maison des technologies de formation et d’apprentissage Roland-Giguère (MATI Montréal, which designed a “school bag” software that is little used. The paper introduces the technological tool and shows how it can help in reaching curriculum alignment, a key element for the success of educational reforms.

  9. Characterization of ultrathin SOI film and application to short channel MOSFETs.

    Science.gov (United States)

    Tang, Xiaohui; Reckinger, Nicolas; Larrieu, Guilhem; Dubois, Emmanuel; Flandre, Denis; Raskin, Jean-Pierre; Nysten, Bernard; Jonas, Alain M; Bayot, Vincent

    2008-04-23

    In this study, a very dilute solution (NH(4)OH:H(2)O(2):H(2)O 1:8:64 mixture) was employed to reduce the thickness of commercially available SOI wafers down to 3 nm. The etch rate is precisely controlled at 0.11 Å s(-1) based on the self-limited etching speed of the solution. The thickness uniformity of the thin film, evaluated by spectroscopic ellipsometry and by high-resolution x-ray reflectivity, remains constant through the thinning process. Moreover, the film roughness, analyzed by atomic force microscopy, slightly improves during the thinning process. The residual stress in the thin film is much smaller than that obtained by sacrificial oxidation. Mobility, measured by means of a bridge-type Hall bar on 15 nm film, is not significantly reduced compared to the value of bulk silicon. Finally, the thinned SOI wafers were used to fabricate Schottky-barrier metal-oxide-semiconductor field-effect transistors with a gate length down to 30 nm, featuring state-of-the-art current drive performance.

  10. Hybrid III-V/SOI resonant cavity enhanced photodetector

    DEFF Research Database (Denmark)

    Learkthanakhachon, Supannee; Taghizadeh, Alireza; Park, Gyeong Cheol

    2016-01-01

    A hybrid III–V/SOI resonant-cavity-enhanced photodetector (RCE-PD) structure comprising a high-contrast grating (HCG) reflector, a hybrid grating (HG) reflector, and an air cavity between them, has been proposed and investigated. In the proposed structure, a light absorbing material is integrated...... as part of the HG reflector, enabling a very compact vertical cavity. Numerical investigations show that a quantum efficiency close to 100 % and a detection linewidth of about 1 nm can be achieved, which are desirable for wavelength division multiplexing applications. Based on these results, a hybrid RCE...

  11. Photonic bandpass filter characteristics of multimode SOI waveguides integrated with submicron gratings.

    Science.gov (United States)

    Sah, Parimal; Das, Bijoy Krishna

    2018-03-20

    It has been shown that a fundamental mode adiabatically launched into a multimode SOI waveguide with submicron grating offers well-defined flat-top bandpass filter characteristics in transmission. The transmitted spectral bandwidth is controlled by adjusting both waveguide and grating design parameters. The bandwidth is further narrowed down by cascading two gratings with detuned parameters. A semi-analytical model is used to analyze the filter characteristics (1500  nm≤λ≤1650  nm) of the device operating in transverse-electric polarization. The proposed devices were fabricated with an optimized set of design parameters in a SOI substrate with a device layer thickness of 250 nm. The pass bandwidth of waveguide devices integrated with single-stage gratings are measured to be ∼24  nm, whereas the device with two cascaded gratings with slightly detuned periods (ΔΛ=2  nm) exhibits a pass bandwidth down to ∼10  nm.

  12. A 2D simulation study and characterization of a novel vertical SOI MOSFET with a smart source/body tie

    International Nuclear Information System (INIS)

    Lin, Jyi-Tsong; Lee, Tai-Yi; Lin, Kao-Cheng

    2008-01-01

    A novel vertical silicon-on-insulator (SOI) metal-oxide-semiconductor field-effect transistor (MOSFET) with a smart source/body contact, SSBVMOS, is presented here for the first time. 2D simulations reveal that the SSBVMOS reduces self-heating effects, with the lattice temperature reduced by 14% and the hole temperature reduced by 25%. The SSBVMOS also eliminates the floating body effect, something that other SOI vertical MOSFETs are unable to accomplish, regardless of the thickness of the thin film. The SSBVMOS is further found to have a better drain-induced barrier lowering and subthreshold swing than either a conventional vertical MOSFET or an SOI vertical MOSFET. Moreover, these results are achieved using typical pillar heights and buried oxide thicknesses. Should future technological advances allow for lower pillars or thinner buried oxides, the SSBVMOS performance would further increase

  13. Charge accumulation in the buried oxide of SOI structures with the bonded Si/SiO2 interface under γ-irradiation: effect of preliminary ion implantation

    International Nuclear Information System (INIS)

    Naumova, O V; Fomin, B I; Ilnitsky, M A; Popov, V P

    2012-01-01

    In this study, we examined the effect of preliminary boron or phosphorous implantation on charge accumulation in the buried oxide of SOI-MOSFETs irradiated with γ-rays in the total dose range (D) of 10 5 –5 × 10 7 rad. The buried oxide was obtained by high-temperature thermal oxidation of Si, and it was not subjected to any implantation during the fabrication process of SOI structures. It was found that implantation with boron or phosphorous ions, used in fabrication technologies of SOI-MOSFETs, increases the concentration of precursor traps in the buried oxide of SOI structures. Unlike in the case of boron implantation, phosphorous implantation leads to an increased density of states at the Si/buried SiO 2 interface during subsequent γ-irradiation. In the γ-irradiated SOI-MOSFETs, the accumulated charge density and the density of surface states in the Si/buried oxide layer systems both vary in proportion to k i ln D. The coefficients k i for as-fabricated and ion-implanted Si/buried SiO 2 systems were evaluated. From the data obtained, it was concluded that a low density of precursor hole traps was a factor limiting the positive charge accumulation in the buried oxide of as-fabricated (non-implanted) SOI structures with the bonded Si/buried SiO 2 interface. (paper)

  14. Le sens du travail dans un contexte de dérégulation : le cas des cadres d’entreprise The Meaning of Work in a Context of Deregulation

    Directory of Open Access Journals (Sweden)

    Olivier Cousin

    2011-03-01

    Full Text Available La loyauté a longtemps défini le lien particulier qui unissait les cadres à leur entreprise. Ce principe s’affaiblit aujourd’hui et laisse la place à une autre logique où la défection domine, ce qui suppose que les cadres deviennent les acteurs et les sujets de leur histoire. Comment vivent-ils ce changement et quel sens donnent-ils à leur travail ? À partir du récit qu’ils font de leur expérience du travail, on peut analyser leur rapport au travail selon trois dimensions : l’intégration à l’entreprise, la nature de l’activité et la construction d’une image de soi qui se matérialise par la gestion de sa carrière. Chacune de ces dimensions donne un rapport particulier au travail qui, pour les cadres, demeure un élément de construction de soi positif mais empreint de très fortes incertitudes.Loyalty long defined the peculiar link between managers and their company. Now on the wane, this principle is being replaced by a logic where defection dominates, making of managers actors of their own lot. How do the concerned feel about this and what impact does it have on their work ? Thanks to life histories three attitudes to work emerge : integrating with the company, the kind of work done and self-imaging via career construction. Each relates in its own way to work which despite its uncertainties contributes to self esteem

  15. A Temperature Sensor using a Silicon-on-Insulator (SOI) Timer for Very Wide Temperature Measurement

    Science.gov (United States)

    Patterson, Richard L.; Hammoud, Ahmad; Elbuluk, Malik; Culley, Dennis E.

    2008-01-01

    A temperature sensor based on a commercial-off-the-shelf (COTS) Silicon-on-Insulator (SOI) Timer was designed for extreme temperature applications. The sensor can operate under a wide temperature range from hot jet engine compartments to cryogenic space exploration missions. For example, in Jet Engine Distributed Control Architecture, the sensor must be able to operate at temperatures exceeding 150 C. For space missions, extremely low cryogenic temperatures need to be measured. The output of the sensor, which consisted of a stream of digitized pulses whose period was proportional to the sensed temperature, can be interfaced with a controller or a computer. The data acquisition system would then give a direct readout of the temperature through the use of a look-up table, a built-in algorithm, or a mathematical model. Because of the wide range of temperature measurement and because the sensor is made of carefully selected COTS parts, this work is directly applicable to the NASA Fundamental Aeronautics/Subsonic Fixed Wing Program--Jet Engine Distributed Engine Control Task and to the NASA Electronic Parts and Packaging (NEPP) Program. In the past, a temperature sensor was designed and built using an SOI operational amplifier, and a report was issued. This work used an SOI 555 timer as its core and is completely new work.

  16. L’effet, c'est moi: Marguerite Yourcenar lectrice de Nietzsche

    Directory of Open Access Journals (Sweden)

    May Chehab

    2008-07-01

    Full Text Available La déconstruction nietzschéenne de la philosophie du sujet traverse toute l’œuvre de Marguerite Yourcenar : par un doute constant quant à la validité philosophique de la tradition occidentale du ‘moi’ ; par la conviction que le ‘je’ est un fait de langage et l’une des grandes erreurs de l’entendement intellectualiste face à l’intuitionnisme des philosophies orientales ; par la substitution d’une constellation du sujet à la place du royaume de l’unique. Naître à soi n’est plus soumission religieuse mais exigence personnelle d’élévation morale, dont l’accomplissement nécessite que l’on acquiesce à son destin, ceci constituant la seule liberté accessible au genre humain. À la transcendance chrétienne vient se substituer une immanence esthétique qui donne forme au projet yourcenarien de connaissance de soi.

  17. Anomalous DIBL Effect in Fully Depleted SOI MOSFETs Using Nanoscale Gate-Recessed Channel Process

    Directory of Open Access Journals (Sweden)

    Avi Karsenty

    2015-01-01

    Full Text Available Nanoscale Gate-Recessed Channel (GRC Fully Depleted- (FD- SOI MOSFET device with a silicon channel thickness (tSi as low as 2.2 nm was first tested at room temperature for functionality check and then tested at low temperature (77 K for I-V characterizations. In spite of its FD-SOI nanoscale thickness and long channel feature, the device has surprisingly exhibited a Drain-Induced Barrier Lowering (DIBL effect at RT. However, this effect was suppressed at 77 K. If the apparition of such anomalous effect can be explained by a parasitic short channel transistor located at the edges of the channel, its suppression is explained by the decrease of the potential barrier between the drain and the channel when lowering the temperature.

  18. Structural Make-up, Biopolymer Conformation, and Biodegradation Characteristics of Newly Developed Super Genotype of Oats (CDC SO-I vs. Conventional Varieties): Novel Approach

    International Nuclear Information System (INIS)

    Damiran, D.; Yu, P.

    2010-01-01

    Recently, a new 'super' genotype of oats (CDC SO-I or SO-I) has been developed. The objectives of this study were to determine structural makeup (features) of oat grain in endosperm and pericarp regions and to reveal and identify differences in protein amide I and II and carbohydrate structural makeup (conformation) between SO-I and two conventional oats (CDC Dancer and Derby) grown in western Canada in 2006, using advanced synchrotron radiation based Fourier transform infrared microspectroscopy (SRFTIRM). The SRFTIRM experiments were conducted at National Synchrotron Light Sources, Brookhaven National Laboratory (NSLS, BNL, U.S. Department of Energy). From the results, it was observed that comparison between the new genotype oats and conventional oats showed (1) differences in basic chemical and protein subfraction profiles and energy values with the new SO-I oats containing lower lignin (21 g/kg of DM) and higher soluble crude protein (530 g/kg CP), crude fat (59 g/kg of DM), and energy values (TDN, 820 g/kg of DM; NE L3x , 7.8 MJ/kg of DM); (2) significant differences in rumen biodegradation kinetics of dry matter, starch, and protein with the new SO-I oats containing lower EDDM (638 g/kg of DM) and higher EDCP (103 g/kg of DM); (3) significant differences in nutrient supply with highest truly absorbed rumen undegraded protein (ARUP, 23 g/kg of DM) and total metabolizable protein supply (MP, 81 g/kg of DM) from the new SO-I oats; and (4) significant differences in structural makeup in terms of protein amide I in the endosperm region (with amide I peak height from 0.13 to 0.22 IR absorbance unit) and cellulosic compounds to carbohydrate ratio in the pericarp region (ratio from 0.02 to 0.06). The results suggest that with the SRFTIRM technique, the structural makeup differences between the new genotype oats (SO-I) and two conventional oats (Dancer and Derby) could be revealed.

  19. Annealing of (DU-10Mo)-Zr Co-Rolled Foils

    International Nuclear Information System (INIS)

    Pacheco, Robin Montoya; Alexander, David John; Mccabe, Rodney James; Clarke, Kester Diederik; Scott, Jeffrey E.; Montalvo, Joel Dwayne; Papin, Pallas; Ansell, George S.

    2017-01-01

    Producing uranium-10wt% molybdenum (DU-10Mo) foils to clad with Al first requires initial bonding of the DU-10Mo foil to zirconium (Zr) by hot rolling, followed by cold rolling to final thickness. Rolling often produces wavy (DU-10Mo)-Zr foils that should be flattened before further processing, as any distortions could affect the final alignment and bonding of the Al cladding to the Zr co-rolled surface layer; this bonding is achieved by a hot isostatic pressing (HIP) process. Distortions in the (DU-10Mo)-Zr foil may cause the fuel foil to press against the Al cladding and thus create thinner or thicker areas in the Al cladding layer during the HIP cycle. Post machining is difficult and risky at this stage in the process since there is a chance of hitting the DU-10Mo. Therefore, it is very important to establish a process to flatten and remove any waviness. This study was conducted to determine if a simple annealing treatment could flatten wavy foils. Using the same starting material (i.e. DU-10Mo coupons of the same thickness), five different levels of hot rolling and cold rolling, combined with five different annealing treatments, were performed to determine the effect of these processing variables on flatness, bonding of layers, annealing response, microstructure, and hardness. The same final thickness was reached in all cases. Micrographs, textures, and hardness measurements were obtained for the various processing combinations. Based on these results, it was concluded that annealing at 650°C or higher is an effective treatment to appreciably reduce foil waviness.

  20. Annealing of (DU-10Mo)-Zr Co-Rolled Foils

    Energy Technology Data Exchange (ETDEWEB)

    Pacheco, Robin Montoya [Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Alexander, David John [Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Mccabe, Rodney James [Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Clarke, Kester Diederik [Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Scott, Jeffrey E. [Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Montalvo, Joel Dwayne [Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Papin, Pallas [Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Ansell, George S. [Colorado School of Mines, Golden, CO (United States)

    2017-01-20

    Producing uranium-10wt% molybdenum (DU-10Mo) foils to clad with Al first requires initial bonding of the DU-10Mo foil to zirconium (Zr) by hot rolling, followed by cold rolling to final thickness. Rolling often produces wavy (DU-10Mo)-Zr foils that should be flattened before further processing, as any distortions could affect the final alignment and bonding of the Al cladding to the Zr co-rolled surface layer; this bonding is achieved by a hot isostatic pressing (HIP) process. Distortions in the (DU-10Mo)-Zr foil may cause the fuel foil to press against the Al cladding and thus create thinner or thicker areas in the Al cladding layer during the HIP cycle. Post machining is difficult and risky at this stage in the process since there is a chance of hitting the DU-10Mo. Therefore, it is very important to establish a process to flatten and remove any waviness. This study was conducted to determine if a simple annealing treatment could flatten wavy foils. Using the same starting material (i.e. DU-10Mo coupons of the same thickness), five different levels of hot rolling and cold rolling, combined with five different annealing treatments, were performed to determine the effect of these processing variables on flatness, bonding of layers, annealing response, microstructure, and hardness. The same final thickness was reached in all cases. Micrographs, textures, and hardness measurements were obtained for the various processing combinations. Based on these results, it was concluded that annealing at 650°C or higher is an effective treatment to appreciably reduce foil waviness.

  1. Process optimization of a deep trench isolation structure for high voltage SOI devices

    International Nuclear Information System (INIS)

    Zhu Kuiying; Qian Qinsong; Zhu Jing; Sun Weifeng

    2010-01-01

    The process reasons for weak point formation of the deep trench on SOI wafers have been analyzed in detail. An optimized trench process is also proposed. It is found that there are two main reasons: one is over-etching laterally of the silicon on the surface of the buried oxide caused by a fringe effect; and the other is the slow growth rate of the isolation oxide in the concave silicon corner of the trench bottom. In order to improve the isolation performance of the deep trench, two feasible ways for optimizing the trench process are proposed. The improved process thickens the isolation oxide and rounds sharp silicon corners at their weak points, increasing the applied voltage by 15-20 V at the same leakage current. The proposed new trench isolation process has been verified in the foundry's 0.5-μm HV SOI technology. (semiconductor devices)

  2. The founder of the Friends Foundation--Tessie Soi.

    Science.gov (United States)

    Topurua, Ore

    2013-01-01

    Tessie Soi is well known in Papua New Guinea and beyond for her work with HIV/AIDS (human immunodeficiency virus/acquired immune deficiency syndrome) patients, including through the Friends Foundation, an organization that focuses on helping families affected by HIV and AIDS. This article explores Tessie's early life and childhood, providing insight into some of the values she learned from her parents. Providing details about the Friends Foundation and the Orphan Buddy Systems program, a program Tessie established to support AIDS orphans, the article offers insight into Tessie's beliefs and compassion, simultaneously highlighting the value she places on her family.

  3. Special Issue: Planar Fully-Depleted SOI technology

    Science.gov (United States)

    Allibert, F.; Hiramoto, T.; Nguyen, B. Y.

    2016-03-01

    We are in the era of mobile computing with smart handheld devices and remote data storage "in the cloud," with devices that are almost always on and driven by needs of high data transmission rate, instant access/connection and long battery life. With all the ambitious requirements for better performance with lower power consumption, the SoC solution must also be cost-effective in order to capture the large, highly-competitive consumer mobile and wearable markets. The Fully-Depleted SOI device/circuit is a unique option that can satisfy all these requirements and has made tremendous progress in development for various applications and adoption by foundries, integrated device manufacturers (IDM), and fabless companies in the last 3 years.

  4. Development of an X-ray imaging system with SOI pixel detectors

    Energy Technology Data Exchange (ETDEWEB)

    Nishimura, Ryutaro, E-mail: ryunishi@post.kek.jp [School of High Energy Accelerator Science, SOKENDAI (The Graduate University for Advanced Studies), Oho 1-1, Tsukuba, Ibaraki 305-0801 (Japan); Arai, Yasuo; Miyoshi, Toshinobu [Institute of Particle and Nuclear Studies, High Energy Accelerator Research Organization (KEK-IPNS), Oho 1-1, Tsukuba, Ibaraki 305-0801 (Japan); Hirano, Keiichi; Kishimoto, Shunji; Hashimoto, Ryo [Institute of Materials Structure Science, High Energy Accelerator Research Organization (KEK-IMSS), Oho 1-1, Tsukuba, Ibaraki 305-0801 (Japan)

    2016-09-21

    An X-ray imaging system employing pixel sensors in silicon-on-insulator technology is currently under development. The system consists of an SOI pixel detector (INTPIX4) and a DAQ system based on a multi-purpose readout board (SEABAS2). To correct a bottleneck in the total throughput of the DAQ of the first prototype, parallel processing of the data taking and storing processes and a FIFO buffer were implemented for the new DAQ release. Due to these upgrades, the DAQ throughput was improved from 6 Hz (41 Mbps) to 90 Hz (613 Mbps). The first X-ray imaging system with the new DAQ software release was tested using 33.3 keV and 9.5 keV mono X-rays for three-dimensional computerized tomography. The results of these tests are presented. - Highlights: • The X-ray imaging system employing the SOI pixel sensor is currently under development. • The DAQ of the first prototype has the bottleneck in the total throughput. • The new DAQ release solve the bottleneck by parallel processing and FIFO buffer. • The new DAQ release was tested using 33.3 keV and 9.5 keV mono X-rays.

  5. Comparison of short-circuit characteristics of trench gate and planar gate U-shaped channel SOI-LIGBTs

    Science.gov (United States)

    Zhang, Long; Zhu, Jing; Sun, Weifeng; Zhao, Minna; Huang, Xuequan; Chen, Jiajun; Shi, Longxing; Chen, Jian; Ding, Desheng

    2017-09-01

    Comparison of short-circuit (SC) characteristics of 500 V rated trench gate U-shaped channel (TGU) SOI-LIGBT and planar gate U-shaped channel (PGU) SOI-LIGBT is made for the first time in this paper. The on-state carrier profile of the TGU structure is reshaped by the dual trenches (a gate trench G1 and a hole barrier trench G2), which leads to a different conduction behavior from that of the PGU structure. The TGU structure exhibits a higher latchup immunity but a severer self-heating effect. At current density (JC) 640 A/cm2. Comparison of layouts and fabrication processes are also made between the two types of devices.

  6. Structural makeup, biopolymer conformation, and biodegradation characteristics of a newly developed super genotype of oats (CDC SO-I versus conventional varieties): a novel approach.

    Science.gov (United States)

    Damiran, Daalkhaijav; Yu, Peiqiang

    2010-02-24

    Recently, a new "super" genotype of oats (CDC SO-I or SO-I) has been developed. The objectives of this study were to determine structural makeup (features) of oat grain in endosperm and pericarp regions and to reveal and identify differences in protein amide I and II and carbohydrate structural makeup (conformation) between SO-I and two conventional oats (CDC Dancer and Derby) grown in western Canada in 2006, using advanced synchrotron radiation based Fourier transform infrared microspectroscopy (SRFTIRM). The SRFTIRM experiments were conducted at National Synchrotron Light Sources, Brookhaven National Laboratory (NSLS, BNL, U.S. Department of Energy). From the results, it was observed that comparison between the new genotype oats and conventional oats showed (1) differences in basic chemical and protein subfraction profiles and energy values with the new SO-I oats containing lower lignin (21 g/kg of DM) and higher soluble crude protein (530 g/kg CP), crude fat (59 g/kg of DM), and energy values (TDN, 820 g/kg of DM; NE(L3x), 7.8 MJ/kg of DM); (2) significant differences in rumen biodegradation kinetics of dry matter, starch, and protein with the new SO-I oats containing lower EDDM (638 g/kg of DM) and higher EDCP (103 g/kg of DM); (3) significant differences in nutrient supply with highest truly absorbed rumen undegraded protein (ARUP, 23 g/kg of DM) and total metabolizable protein supply (MP, 81 g/kg of DM) from the new SO-I oats; and (4) significant differences in structural makeup in terms of protein amide I in the endosperm region (with amide I peak height from 0.13 to 0.22 IR absorbance unit) and cellulosic compounds to carbohydrate ratio in the pericarp region (ratio from 0.02 to 0.06). The results suggest that with the SRFTIRM technique, the structural makeup differences between the new genotype oats (SO-I) and two conventional oats (Dancer and Derby) could be revealed.

  7. Inverse Design of a SOI T-junction Polarization Beamsplitter

    Science.gov (United States)

    Ye, Zi; Qiu, Jifang; Meng, Chong; Zheng, Li; Dong, Zhenli; Wu, Jian

    2017-06-01

    A SOI T-junction polarization beamsplitter with an ultra-compact footprint of 2.8×2.8μm2 is designed based on the method of inverse design. Simulated results show that the conversion efficiencies for TE and TM lights are 73.34% (simulated insertion loss of 2dB) and 80.4% (simulated insertion loss of 1.7dB) at 1550nm, respectively; the simulated extinction ratios for TE and TM lights are 19.3dB and 13.99dB at 1558nm, respectively.

  8. L’émoi des demoiselles en voyage. Du voyage dans quelques journaux intimes de jeunes filles du XIXe siècle

    Directory of Open Access Journals (Sweden)

    Martine Sonnet

    2012-06-01

    Full Text Available Le corpus de journaux intimes de jeunes filles du XIXe siècle constitué par Philippe Lejeune (Le moi des demoiselles : enquête sur le journal de jeune fille, 1993 se prête à une lecture  mettant en évidence la rupture provoquée par le voyage dans le terne ordinaire des jours de jeunes bourgeoises ou de jeunes aristocrates. Une trentaine de journaux évoquant des voyages dévoilent l’ambivalence des émotions que suscitent des déplacements, toujours accomplis sous bonne escorte, remplissant le plus souvent des fonctions combinées : touristiques, familiales, thérapeutiques, éducatives etc.. Joie et anxiété des préparatifs et du départ, craintes et désirs de rencontres dans la promiscuité des chemins de fer, excitation au passage des frontières et soulagement de rentrer chez soi saine et sauve : autant de sentiments confiés à leurs journaux par les jeunes diaristes voyageuses.Travelling Demoiselles’ Emotions : travel in girls’ diaries in the nineteenth centuryThe collection of nineteenth century’s girls’ private diaries studied by Philippe Lejeune (Le moi des demoiselles : enquête sur le journal de jeune fille, 1993 reveals the way travel interrupted the often dull routine of young bourgeois and aristocratic girls. About thirty diaries display the mixed feelings that travel generated for these girls who left home, most often with family members, to discover new places, attend family events, restore health, or acquire education, etc. This selection of texts highlights such topics as the pleasure and anxiety of leaving home, the fear and desire of railway travels’ unexpected encounters, the exhilaration in crossing borde.

  9. Nonlinear Parasitic Capacitance Modelling of High Voltage Power MOSFETs in Partial SOI Process

    DEFF Research Database (Denmark)

    Fan, Lin; Knott, Arnold; Jørgensen, Ivan Harald Holger

    2016-01-01

    : off-state, sub-threshold region, and on-state in the linear region. A high voltage power MOSFET is designed in a partial Silicon on Insulator (SOI) process, with the bulk as a separate terminal. 3D plots and contour plots of the capacitances versus bias voltages for the transistor summarize...

  10. Total dose induced latch in short channel NMOS/SOI transistors

    International Nuclear Information System (INIS)

    Ferlet-Cavrois, V.; Quoizola, S.; Musseau, O.; Flament, O.; Leray, J.L.; Pelloie, J.L.; Raynaud, C.; Faynot, O.

    1998-01-01

    A latch effect induced by total dose irradiation is observed in short channel SOI transistors. This effect appears on NMOS transistors with either a fully or a partially depleted structure. It is characterized by a hysteresis behavior of the Id-Vg characteristics at high drain bias for a given critical dose. Above this dose, the authors still observe a limited leakage current at low drain bias (0.1 V), but a high conduction current at high drain bias (2 V) as the transistor should be in the off-state. The critical dose above which the latch appears strongly depends on gate length, transistor structure (fully or partially depleted), buried oxide thickness and supply voltage. Two-dimensional (2D) numerical simulations indicate that the parasitic condition is due to the latch of the back gate transistor triggered by charge trapping in the buried oxide. To avoid the latch induced by the floating body effect, different techniques can be used: doping engineering, body contacts, etc. The study of the main parameters influencing the latch (gate length, supply voltage) shows that the scaling of technologies does not necessarily imply an increased latch sensitivity. Some technological parameters like the buried oxide hardness and thickness can be used to avoid latch, even at high cumulated dose, on highly integrated SOI technologies

  11. A two dimensional analytical modeling of surface potential in triple metal gate (TMG) fully-depleted Recessed-Source/Drain (Re-S/D) SOI MOSFET

    Science.gov (United States)

    Priya, Anjali; Mishra, Ram Awadh

    2016-04-01

    In this paper, analytical modeling of surface potential is proposed for new Triple Metal Gate (TMG) fully depleted Recessed-Source/Dain Silicon On Insulator (SOI) Metal Oxide Semiconductor Field Effect Transistor (MOSFET). The metal with the highest work function is arranged near the source region and the lowest one near the drain. Since Recessed-Source/Drain SOI MOSFET has higher drain current as compared to conventional SOI MOSFET due to large source and drain region. The surface potential model developed by 2D Poisson's equation is verified by comparison to the simulation result of 2-dimensional ATLAS simulator. The model is compared with DMG and SMG devices and analysed for different device parameters. The ratio of metal gate length is varied to optimize the result.

  12. 300 nm bandwidth adiabatic SOI polarization splitter-rotators exploiting continuous symmetry breaking.

    Science.gov (United States)

    Socci, Luciano; Sorianello, Vito; Romagnoli, Marco

    2015-07-27

    Adiabatic polarization splitter-rotators are investigated exploiting continuous symmetry breaking thereby achieving significant device size and losses reduction in a single mask fabrication process for both SOI channel and ridge waveguides. A crosstalk lower than -25 dB is expected over 300nm bandwidth, making the device suitable for full grid CWDM and diplexer/triplexer FTTH applications at 1310, 1490 and 1550nm.

  13. Technique du Micro-Enseignement: Une Approche Pour Enseigner La Pratique de La Lecture aux Apprenants de Niveau A2 et La Perception de Cette Technique Par Les Futurs Enseignants

    Directory of Open Access Journals (Sweden)

    Nurten ÖZÇELİK

    2017-09-01

    Full Text Available Cette étude a été préparée en vue de déterminer les difficultés rencontrées par les futurs enseignants lors de l’enseignement de la lecture aux apprenants de niveau A2 par la technique du micro-enseignement, et de mettre à jour leurs opinions concernant les avantages ainsi que les inconvénients de cette technique. Le groupe de travail est composé de 20 futurs enseignants (14 femmes, 6 hommes du Département de la Didactique du FLE de la Faculté Pédagogique de l’Université Gazi, pour le deuxième semestre de la période 2014-2015. Les données recueillies par les questions à réponses ouvertes ont été évaluées par la méthode de l’analyse descriptive, à la suite des calculs de fréquence. Selon les résultats obtenus, les futurs enseignants ont surtout du mal à prononcer le français, à gérer leurs émotions, à préparer une présentation, des activités de pré-lecture et du dossier de présentation. Augmenter la confiance en soi, apprendre à préparer un plan de cours, donner la possibilité de voir les aspects insuffisants sont les points positifs de la technique. L’insuffisance des participations au cours, l’artificialité du milieu de la classe, la subjectivité des critiques des pairs sont indiqués par les participants comme les inconvénients de cette technique.

  14. Room to high temperature measurements of flexible SOI FinFETs with sub-20-nm fins

    KAUST Repository

    Diab, Amer El Hajj

    2014-12-01

    We report the temperature dependence of the core electrical parameters and transport characteristics of a flexible version of fin field-effect transistor (FinFET) on silicon-on-insulator (SOI) with sub-20-nm wide fins and high-k/metal gate-stacks. For the first time, we characterize them from room to high temperature (150 °C) to show the impact of temperature variation on drain current, gate leakage current, and transconductance. Variation of extracted parameters, such as low-field mobility, subthreshold swing, threshold voltage, and ON-OFF current characteristics, is reported too. Direct comparison is made to a rigid version of the SOI FinFETs. The mobility degradation with temperature is mainly caused by phonon scattering mechanism. The overall excellent devices performance at high temperature after release is outlined proving the suitability of truly high-performance flexible inorganic electronics with such advanced architecture.

  15. Electrical characteristics of SiGe-base bipolar transistors on thin-film SOI substrates

    International Nuclear Information System (INIS)

    Liao, Shu-Hui; Chang, Shu-Tong

    2010-01-01

    This paper, based on two-dimensional simulations, provides a comprehensive analysis of the electrical characteristics of the Silicon germanium (SiGe)-base bipolar transistors on thin-film siliconon-insulator (SOI) substrates. The impact of the buried oxide thickness (T OX ), the emitter width (W E ), and the lateral distance between the edge of the intrinsic base and the reach-through region (L col ) on both the AC and DC device characteristics was analyzed in detail. Regarding the DC characteristics, the simulation results suggest that a thicker T OX gives a larger base-collector breakdown voltage (BV CEO ), whereas reducing the T OX leads to an enhanced maximum electric field at the B-C junction. As for the AC characteristics, cut-off frequency (f T ) increases slightly with increasing buried oxide thickness and finally saturates to a constant value when the buried oxide thickness is about 0.15 μm. The collector-substrate capacitance (C CS ) decreases with increasing buried oxide thickness while the maximum oscillation frequency (f max ) increases with increasing buried oxide thickness. Furthermore, the impact of self-heating effects in the device was analyzed in various areas. The thermal resistance as a function of the buried oxide thickness indicates that the thermal resistance of the SiGe-base bipolar transistor on a SOI substrate is slightly higher than that of a bulk SiGe-base bipolar transistor. The thermal resistance is reduced by ∼37.89% when the emitter width is increased by a factor of 5 for a fixed buried oxide thickness of 0.1 μm. All the results can be used to design and optimize SiGe-base bipolar transistors on SOI substrates with minimum thermal resistance to enhance device performance.

  16. A Lateral Differential Resonant Pressure Microsensor Based on SOI-Glass Wafer-Level Vacuum Packaging

    Directory of Open Access Journals (Sweden)

    Bo Xie

    2015-09-01

    Full Text Available This paper presents the fabrication and characterization of a resonant pressure microsensor based on SOI-glass wafer-level vacuum packaging. The SOI-based pressure microsensor consists of a pressure-sensitive diaphragm at the handle layer and two lateral resonators (electrostatic excitation and capacitive detection on the device layer as a differential setup. The resonators were vacuum packaged with a glass cap using anodic bonding and the wire interconnection was realized using a mask-free electrochemical etching approach by selectively patterning an Au film on highly topographic surfaces. The fabricated resonant pressure microsensor with dual resonators was characterized in a systematic manner, producing a quality factor higher than 10,000 (~6 months, a sensitivity of about 166 Hz/kPa and a reduced nonlinear error of 0.033% F.S. Based on the differential output, the sensitivity was increased to two times and the temperature-caused frequency drift was decreased to 25%.

  17. A CMOS/SOI Single-input PWM Discriminator for Low-voltage Body-implanted Applications

    Directory of Open Access Journals (Sweden)

    Jader A. De Lima

    2002-01-01

    Full Text Available A CMOS/SOI circuit to decode Pulse-Width Modulation (PWM signals is presented as part of a body-implanted neurostimulator for visual prosthesis. Since encoded data is the sole input to the circuit, the decoding technique is based on a novel double-integration concept and does not require low-pass filtering. Non-overlapping control phases are internally derived from the incoming pulses and a fast-settling comparator ensures good discrimination accuracy in the megahertz range. The circuit was integrated on a 2 μm single-metal thin-film CMOS/SOI fabrication process and has an effective area of 2 mm2. Measured resolution of encoding parameter α is better than 10% at 6 MHz and VDD = 3.3 V. Idle-mode consumption is 340 μW. Pulses of frequencies up to15 MHz and α =10% can be discriminated for 2.3 V ≤ VDD ≤ 3.3 V. Such an excellent immunity to VDD deviations meets a design specification with respect to inherent coupling losses on transmitting data and power by means of a transcutaneous link.

  18. Study of CMOS-SOI Integrated Temperature Sensing Circuits for On-Chip Temperature Monitoring.

    Science.gov (United States)

    Malits, Maria; Brouk, Igor; Nemirovsky, Yael

    2018-05-19

    This paper investigates the concepts, performance and limitations of temperature sensing circuits realized in complementary metal-oxide-semiconductor (CMOS) silicon on insulator (SOI) technology. It is shown that the MOSFET threshold voltage ( V t ) can be used to accurately measure the chip local temperature by using a V t extractor circuit. Furthermore, the circuit's performance is compared to standard circuits used to generate an accurate output current or voltage proportional to the absolute temperature, i.e., proportional-to-absolute temperature (PTAT), in terms of linearity, sensitivity, power consumption, speed, accuracy and calibration needs. It is shown that the V t extractor circuit is a better solution to determine the temperature of low power, analog and mixed-signal designs due to its accuracy, low power consumption and no need for calibration. The circuit has been designed using 1 µm partially depleted (PD) CMOS-SOI technology, and demonstrates a measurement inaccuracy of ±1.5 K across 300 K⁻500 K temperature range while consuming only 30 µW during operation.

  19. Thin NbN film structures on SOI for SNSPD

    Energy Technology Data Exchange (ETDEWEB)

    Il' in, Konstantin; Kurz, Stephan; Henrich, Dagmar; Hofherr, Matthias; Siegel, Michael [IMS, KIT, Karlsruhe (Germany); Semenov, Alexei; Huebers, Heinz-Wilhelm [DLR, Berlin (Germany)

    2012-07-01

    Superconducting Nanowire Single-Photon Detectors (SNSPD) made from ultra-thin NbN films on sapphire demonstrate almost 100% intrinsic detection efficiency (DE). However the system DE values is less than 10% mostly limited by a very low absorptance of NbN films thinner than 5 nm. Integration of SNSPD in Si photonic circuit is a promising way to overcome this problem. We present results on optimization of technology of thin NbN film nanostructures on SOI (Silicon on Insulator) substrate used in Si photonics technology. Superconducting and normal state properties of these structures important for SNSPD development are presented and discussed.

  20. L’artiste de bande dessinée et son miroir : l’autoportrait détourné

    OpenAIRE

    Mao, Catherine

    2013-01-01

    L’attention portée à l’écriture de soi dans la bande dessinée ne s’accompagne pas nécessairement d’une forte préoccupation pour la représentation de soi : l’autoportrait demeure, en général, relativement dépassionné ou bien désincarné. On peut se demander si la bande dessinée, traditionnellement un art du personnage, se prête à l’art du portrait, et a fortiori de l’autoportrait. Pour permettre au lecteur de le reconnaître, il faut en effet que le visage se corresponde d’abord à lui-même : le ...

  1. A study of process-related electrical defects in SOI lateral bipolar transistors fabricated by ion implantation

    Science.gov (United States)

    Yau, J.-B.; Cai, J.; Hashemi, P.; Balakrishnan, K.; D'Emic, C.; Ning, T. H.

    2018-04-01

    We report a systematic study of process-related electrical defects in symmetric lateral NPN transistors on silicon-on-insulator (SOI) fabricated using ion implantation for all the doped regions. A primary objective of this study is to see if pipe defects (emitter-collector shorts caused by locally enhanced dopant diffusion) are a show stopper for such bipolar technology. Measurements of IC-VCE and Gummel currents in parallel-connected transistor chains as a function of post-fabrication rapid thermal anneal cycles allow several process-related electrical defects to be identified. They include defective emitter-base and collector-base diodes, pipe defects, and defects associated with a dopant-deficient region in an extrinsic base adjacent its intrinsic base. There is no evidence of pipe defects being a major concern in SOI lateral bipolar transistors.

  2. Band to Band Tunneling (BBT) Induced Leakage Current Enhancement in Irradiated Fully Depleted SOI Devices

    Science.gov (United States)

    Adell, Phillipe C.; Barnaby, H. J.; Schrimpf, R. D.; Vermeire, B.

    2007-01-01

    We propose a model, validated with simulations, describing how band-to-band tunneling (BBT) affects the leakage current degradation in some irradiated fully-depleted SOI devices. The dependence of drain current on gate voltage, including the apparent transition to a high current regime is explained.

  3. « Soi-même » comme un « autre ». Les histoires coloniales d'Ahmad Tawfîq al-Madanî (1899-1983

    Directory of Open Access Journals (Sweden)

    James McDougall

    2009-05-01

    Full Text Available Dans l'optique de contribuer au dépassement des récits coloniaux ou nationalistes, cet article esquisse une relecture critique de l'histoire culturelle et intellectuelle de l'entre-deux-guerres au Maghreb, à travers un acteur politique et intellectuel parfois méconnu. Son œuvre, sa représentation de soi (dans ses mémoires donnent des points d'appui pour une analyse qui remettrait un certain type (salafiste de discours nationaliste — discours dont al-Madanî se fait en quelque sorte le symbole — dans le contexte particulier des conditions de la production politique, intellectuelle et culturelle en Afrique du Nord française. Opérant une rupture avec une pratique qui consiste à retranscrire les propres termes du discours nationaliste en présentant celui-ci comme une « restauration de l'histoire », nous nous efforcerons de montrer comment une stratégie d'invention historiographique, liée au mouvement réformiste musulman en Algérie, et conçue dans une relation « dialogique » intense avec la domination coloniale, refonde la conception de communauté en tant que « nation ». Cette conception particulière de la nation, et le rôle d'al-Madanî comme producteur de celle-ci, se voient dans ses relations complexes avec la situation coloniale qui leur donne naissance, et avec le mouvement révolutionnaire qui finira par arracher l'indépendance.

  4. Actes des 5èmes Journées Scientifiques du GDR3544 Sciences du Bois. Journées Annuelles du GDR 3544 Sciences du Bois

    OpenAIRE

    CHAPLAIN, Myriam; CARE, Sabine; GRIL, Joseph

    2016-01-01

    Le Groupement de Recherche en Sciences du bois (GDR3544 Sciences du Bois) a été créé en 2012 par le CNRS et renouvelé en 2016 pour 5 ans. La mission de ce groupement est : (1) de structurer la recherche sur le bois en France pour lui donner une visibilité nationale, (2) de contribuer au développement de la formation en sciences du bois et (3) de servir de relai aux réseaux internationaux de sciences du bois. Les 5èmes journées annuelles du GDR Bois ont été organisées à Bordeaux, au domaine du...

  5. Effets de la microdose sur la production du niébé, du mil et du ...

    African Journals Online (AJOL)

    Effets de la microdose sur la production du niébé, du mil et du sorgho en fonction la toposéquence. Fatimata Saba, Sibiri Jean Baptiste Taonda, Idriss Serme, Alimata A. Bandaogo, Augustin P. Sourwema, Adama Kabre ...

  6. DOUBLE BOSS SCULPTURED DIAPHRAGM EMPLOYED PIEZORESISTIVE MEMS PRESSURE SENSOR WITH SILICON-ON-INSULATOR (SOI

    Directory of Open Access Journals (Sweden)

    D. SINDHANAISELVI

    2017-07-01

    Full Text Available This paper presents the detailed study on the measurement of low pressure sensor using double boss sculptured diaphragm of piezoresistive type with MEMS technology in flash flood level measurement. The MEMS based very thin diaphragms to sense the low pressure is analyzed by introducing supports to achieve linearity. The simulation results obtained from Intellisuite MEMS CAD design tool show that very thin diaphragms with rigid centre or boss give acceptable linearity. Further investigations on very thin diaphragms embedded with piezoresistor for low pressure measurement show that it is essential to analyse the piezoresistor placement and size of piezoresistor to achieve good sensitivity. A modified analytical modelling developed in this study for double boss sculptured diaphragm results were compared with simulated results. Further the enhancement of sensitivity is analyzed using non uniform thickness diaphragm and Silicon-On-Insulator (SOI technique. The simulation results indicate that the double boss square sculptured diaphragm with SOI layer using 0.85μm thickness yields the higher voltage sensitivity, acceptable linearity with Small Scale Deflection.

  7. Disparaître dans la fiction. La traversée du miroir du Docteur Pasavento

    Directory of Open Access Journals (Sweden)

    Charline Pluvinet

    2010-09-01

    Full Text Available Cet article s’attache à explorer dans Docteur Pasavento les modalités et les enjeux d’une réinvention fictionnelle de soi qui se déploie selon un dispositif complexe : le personnage éponyme, qui orchestre sa propre disparition pour se donner de nouvelles identités fictives, est lui-même une projection de l’écrivain. Se réalise dans le roman une alliance entre l’aspiration à disparaître et le désir de rendre indistinctes fiction et réalité, que nous proposons d’éclairer par la métaphore carrollienne de la traversée du miroir où ces mouvements se conjuguent. Il s’agira de rendre perceptible la dynamique fictionnelle qui anime l’écriture romanesque d’Enrique Vila-Matas. This article endeavours to explore the stakes and modalities of the fictional re-invention of the self that takes place in Docteur Pasavento.In the novel, this reinvention arranges itself in accordance to a complex scheme : by orchestrating his own disappearance in order to confer upon himself new fictitious identities, the eponymous character of the novel becomes a projection of the author himself. In the novel, the aspiration to disappear is thus unified with a desire to blur the boundaries between fiction and reality. I intend to shed light on this union by invoking the Carrollian metaphor of passing “through the looking-glass”. The intention of this article is to render evident the fictional dynamism that underpins the novelistic writings of Enrique Vila-Matas.

  8. L'administration du travail et la production du droit du travail (1906-1960). : Note de synthèse du rapport de recherche

    OpenAIRE

    Le Crom , Jean-Pierre

    2007-01-01

    Synthèse d'un rapport de recherche dont l'objectif est d'appréhender le rôle de l'administration centrale du travail dans la production du droit du travail. Deux dimensions sont explorées : le profil des rédacteurs et l'organisation des structures.

  9. Evaluation of COTS SiGe, SOI, and Mixed Signal Electronic Parts for Extreme Temperature Use in NASA Missions

    Science.gov (United States)

    Patterson, Richard L.; Hammoud, Ahmad

    2010-01-01

    The NASA Electronic Parts and Packaging (NEPP) Program sponsors a task at the NASA Glenn Research Center titled "Reliability of SiGe, SOI, and Advanced Mixed Signal Devices for Cryogenic Space Missions." In this task COTS parts and flight-like are evaluated by determining their performance under extreme temperatures and thermal cycling. The results from the evaluations are published on the NEPP website and at professional conferences in order to disseminate information to mission planners and system designers. This presentation discusses the task and the 2010 highlights and technical results. Topics include extreme temperature operation of SiGe and SOI devices, all-silicon oscillators, a floating gate voltage reference, a MEMS oscillator, extreme temperature resistors and capacitors, and a high temperature silicon operational amplifier.

  10. Extreme group index measured and calculated in 2D SOI-based photonic crystal waveguides

    DEFF Research Database (Denmark)

    Lavrinenko, Andrei; Jacobsen, Rune Shim; Fage-Pedersen, Jacob

    2005-01-01

    lattice of air-holes in the 216-nm thick silicon layer in an SOI material. Experimental transmission spectra show a mode cut-off around 1562.5 nm for the fundamental photonic bandgap mode. In order to measure and model the group index of modes in the PCW, a time-of-flight (ToF) method is applied....

  11. Effet du Pediococcus acidilactici sur le bilan lipidique sanguin du ...

    African Journals Online (AJOL)

    Les résultats relatifs aux performances zootechniques ont montré que l'addition du probiotique a amélioré significativement le gain de poids pendant la phase de croissance se traduisant par un indice de consommation meilleur. Les dosages du cholestérol total, des triglycérides, du HDL et du LDL ont été déterminés à la ...

  12. Quantification, modelling and design for signal history dependent effects in mixed-signal SOI/SOS circuits; Quantification, modelisation et conception prenant en compte les etats anterieurs des signaux dans les circuits mixtes SOI/SOS

    Energy Technology Data Exchange (ETDEWEB)

    Edwards, C.F.; Redman-White, W.; Bracey, M.; Tenbroek, B.M.; Lee, M.S. [Southampton Univ., Dept. of Electronics and Computer Sciences (United Kingdom); Uren, M.J.; Brunson, K.M. [DERA Farnborough, GU, Hants (United Kingdom)

    1999-07-01

    This paper deals with how the radiation hardness of mixed signal SOI/SOS CMOS circuits is taken into account at both architectural terms as well as the the transistor level cell designs. The primary issue is to deal with divergent transistor threshold shifts, and to understand the effects of large amplitude non stationary signals on analogue cell behaviour. (authors)

  13. Directly Modulated and ER Enhanced Hybrid III-V/SOI DFB Laser Operating up to 20 Gb/s for Extended Reach Applications in PONs

    DEFF Research Database (Denmark)

    Cristofori, Valentina; Da Ros, Francesco; Chaibi, Mohamed E.

    2017-01-01

    We demonstrate error-free performance of an MRR filtered DML on the SOI platform over 40- and 81-km of SSW. The device operates up to 17.5 Gb/s over 81 km and 20 Gb/s over 40 km.......We demonstrate error-free performance of an MRR filtered DML on the SOI platform over 40- and 81-km of SSW. The device operates up to 17.5 Gb/s over 81 km and 20 Gb/s over 40 km....

  14. SOI N-Channel Field Effect Transistors, CHT-NMOS80, for Extreme Temperatures

    Science.gov (United States)

    Patterson, Richard L.; Hammoud, Almad

    2009-01-01

    Extreme temperatures, both hot and cold, are anticipated in many of NASA space exploration missions as well as in terrestrial applications. One can seldom find electronics that are capable of operation under both regimes. Even for operation under one (hot or cold) temperature extreme, some thermal controls need to be introduced to provide appropriate ambient temperatures so that spacecraft on-board or field on-site electronic systems work properly. The inclusion of these controls, which comprise of heating elements and radiators along with their associated structures, adds to the complexity in the design of the system, increases cost and weight, and affects overall reliability. Thus, it would be highly desirable and very beneficial to eliminate these thermal measures in order to simplify system's design, improve efficiency, reduce development and launch costs, and improve reliability. These requirements can only be met through the development of electronic parts that are designed for proper and efficient operation under extreme temperature conditions. Silicon-on-insulator (SOI) based devices are finding more use in harsh environments due to the benefits that their inherent design offers in terms of reduced leakage currents, less power consumption, faster switching speeds, good radiation tolerance, and extreme temperature operability. Little is known, however, about their performance at cryogenic temperatures and under wide thermal swings. The objective of this work was to evaluate the performance of a new commercial-off-the-shelf (COTS) SOI parts over an extended temperature range and to determine the effects of thermal cycling on their performance. The results will establish a baseline on the suitability of such devices for use in space exploration missions under extreme temperatures, and will aid mission planners and circuit designers in the proper selection of electronic parts and circuits. The electronic part investigated in this work comprised of a CHT-NMOS80

  15. L'intégration des accélérateurs du CERN

    CERN Document Server

    Chemli, S; CERN. Geneva. TS Department

    2008-01-01

    L?intégration du LHC a ouvert des perspectives pour une gestion plus complète des accélérateurs du CERN. La base de données LAYOUT a permis d'assurer la continuité des phases de définition optique du projet, d'intégration 3D et de contrôles de conformité des installations. Les scans et modélisations 3D en couches des installations réalisées constituent un outil déterminant pour la préparation des interventions dans le cadre des procédures de sécurité ALARA. Il est proposé de reproduire cette méthodologie pour les nouveaux projets comme pour les accélérateurs existants. La mise à jour de l'anneau SPS dans LAYOUT semble être la priorité. La base de données SURVEY contient déjà une vue d'ensemble des accélérateurs, chaque composant étant référencé dans le Système de Coordonnées du CERN, selon les définitions théoriques "sources" au 1/100 mm. Base pour l'alignement, elle stocke également les positions réelles des machines. Elle complète ainsi l'information linéaire de LAY...

  16. Alimentation du nouveau-ne et du nourrisson dans la region ...

    African Journals Online (AJOL)

    Alimentation du nouveau-ne et du nourrisson dans la region centrale du togo : pratiques familiales et communautaires avant la mise en oeuvre de la strategie « prise en charge integree des maladies de l'enfant »

  17. "To Break Asunder along the Lesions of Race". The Critical Race Theory of W.E.B. Du Bois

    Science.gov (United States)

    Rashid, Kamau

    2011-01-01

    In addition to its beginnings within legal scholarship, Critical Race Theory (CRT) is intimately aligned with the long tradition of African American social critique, which sought to interrogate the intractable nature of racism and White supremacy. Within this intellectual tradition, the works of W.E.B. Du Bois are of critical significance. Du…

  18. Portage vaginal du streptocoque du groupe B chez la femme ...

    African Journals Online (AJOL)

    Introduction: le streptocoque du groupe B est le principal agent impliqué dans les infections materno-fœtales, les septicémies et les méningites du nouveau-né à terme. L'objectif est de déterminer le taux de portage maternel du streptocoque du groupe B (SGB) à terme. Méthodes: un prélèvement vaginal a été réalisé de ...

  19. Le ministre du Commerce international du Canada rencontre des ...

    International Development Research Centre (IDRC) Digital Library (Canada)

    17 juil. 2017 ... La promotion de l'entrepreneuriat, la façon dont le commerce peut profiter aux femmes et à leur famille, et la création d'emplois pour les plus vulnérables étaient au coeur de la discussion en table ronde du ministre du Commerce international du Canada, l'honorable François-Philippe Champagne, et des ...

  20. Quantification, modelling and design for signal history dependent effects in mixed-signal SOI/SOS circuits

    International Nuclear Information System (INIS)

    Edwards, C.F.; Redman-White, W.; Bracey, M.; Tenbroek, B.M.; Lee, M.S.; Uren, M.J.; Brunson, K.M.

    1999-01-01

    This paper deals with how the radiation hardness of mixed signal SOI/SOS CMOS circuits is taken into account at both architectural terms as well as the the transistor level cell designs. The primary issue is to deal with divergent transistor threshold shifts, and to understand the effects of large amplitude non stationary signals on analogue cell behaviour. (authors)

  1. Modulation of the SSTA decadal variation on ENSO events and relationships of SSTA With LOD,SOI, etc

    Science.gov (United States)

    Liao, D. C.; Zhou, Y. H.; Liao, X. H.

    2007-01-01

    Interannual and decadal components of the length of day (LOD), Southern Oscillation Index (SOI) and Sea Surface Temperature anomaly (SSTA) in Nino regions are extracted by band-pass filtering, and used for research of the modulation of the SSTA on the ENSO events. Results show that besides the interannual components, the decadal components in SSTA have strong impacts on monitoring and representing of the ENSO events. When the ENSO events are strong, the modulation of the decadal components of the SSTA tends to prolong the life-time of the events and enlarge the extreme anomalies of the SST, while the ENSO events, which are so weak that they can not be detected by the interannual components of the SSTA, can also be detected with the help of the modulation of the SSTA decadal components. The study further draws attention to the relationships of the SSTA interannual and decadal components with those of LOD, SOI, both of the sea level pressure anomalies (SLPA) and the trade wind anomalies (TWA) in tropic Pacific, and also with those of the axial components of the atmospheric angular momentum (AAM) and oceanic angular momentum (OAM). Results of the squared coherence and coherent phases among them reveal close connections with the SSTA and almost all of the parameters mentioned above on the interannual time scales, while on the decadal time scale significant connections are among the SSTA and SOI, SLPA, TWA, ?3w and ?3w+v as well, and slight weaker connections between the SSTA and LOD, ?3pib and ?3bp

  2. Comparaison du filtre adaptatif RIF et du filtre a base de reseau de ...

    African Journals Online (AJOL)

    Comparaison du filtre adaptatif RIF et du filtre a base de reseau de neurones pour le filtrage du courant de reference pour la commande du filtre actif parallele. C Benachaiba, A Bassou, B Mazari ...

  3. Etat Du Magnesium Dans Quelques Sols Sales Du Sud Et Du ...

    African Journals Online (AJOL)

    étude a été réalisée sur 86 échantillons de sols provenant du Centre et du Sud de l´Irak. L\\'expérimentation a consisté, d´une part, à calculer les différents sels dominants dans les sols salés par la méthode de combinaison hypothétique et, ...

  4. Boron impurity at the Si/SiO2 interface in SOI wafers and consequences for piezoresistive MEMS devices

    International Nuclear Information System (INIS)

    Nafari, A; Karlen, D; Enoksson, P; Rusu, C; Svensson, K

    2009-01-01

    In this work, the electrical performance of piezoresistive devices fabricated on thinned SOI wafers has been investigated. Specifically, SOI wafers manufactured with the standard bond-and-etch back method (BESOI), commonly used for MEMS fabrication, have been studied. Results from electrical measurements and SIMS characterization show the presence of a boron impurity close to the buried oxide, even on unprocessed wafers. If the boron impurity overlaps with the piezoresistors on the device, it can create non-defined pn-junctions and thus allow conduction through the substrate, leading to stray connections and excessive noise. The thickness of the boron impurity can extend up to several µm, thus setting a thickness limit for the thinnest parts of a MEMS device. This work shows how this impurity can fundamentally affect the functionality of piezoresistive devices. Design rules of how to avoid this are presented

  5. Monolithic integration of InGaAs/InP multiple quantum wells on SOI substrates for photonic devices

    Science.gov (United States)

    Li, Zhibo; Wang, Mengqi; Fang, Xin; Li, Yajie; Zhou, Xuliang; Yu, Hongyan; Wang, Pengfei; Wang, Wei; Pan, Jiaoqing

    2018-02-01

    A direct epitaxy of III-V nanowires with InGaAs/InP multiple quantum wells on v-shaped trenches patterned silicon on insulator (SOI) substrates was realized by combining the standard semiconductor fabrication process with the aspect ratio trapping growth technique. Silicon thickness as well as the width and gap of each nanowire were carefully designed to accommodate essential optical properties and appropriate growth conditions. The III-V element ingredient, crystalline quality, and surface topography of the grown nanowires were characterized by X-ray diffraction spectroscopy, photoluminescence, and scanning electron microscope. Geometrical details and chemical information of multiple quantum wells were revealed by transmission electron microscopy and energy dispersive spectroscopy. Numerical simulations confirmed that the optical guided mode supported by one single nanowire was able to propagate 50 μm with ˜30% optical loss. This proposed integration scheme opens up an alternative pathway for future photonic integrations of III-V devices on the SOI platform at nanoscale.

  6. Riz des femmes, riz des hommes au Guidimaka (Mauritanie)

    OpenAIRE

    Blanchard de La Brosse, Véronique

    2003-01-01

    À l'époque précoloniale et jusque dans la première moitié du XXe siècle, les femmes soninké ont participé activement au commerce interrégional. Aujourd'hui, n'ayant pas comme les hommes la possibilité du recours à l'émigration, elles sont les principales victimes du déclin et du repli sur soi de l'économie villageoise. Elles continuent cependant d'assumer, sur leur propre production, des obligations qui conditionnent leur statut dans la société. Ce sont les femmes, en particulier, qui ...

  7. Insulator photocurrents: Application to dose rate hardening of CMOS/SOI integrated circuits

    International Nuclear Information System (INIS)

    Dupont-Nivet, E.; Coiec, Y.M.; Flament, O.; Tinel, F.

    1998-01-01

    Irradiation of insulators with a pulse of high energy x-rays can induce photocurrents in the interconnections of integrated circuits. The authors present, here, a new method to measure and analyze this effect together with a simple model. They also demonstrate that these insulator photocurrents have to be taken into account to obtain high levels of dose-rate hardness with CMOS on SOI integrated circuits, especially flip-flops or memory blocks of ASICs. They show that it explains some of the upsets observed in a SRAM embedded in an ASIC

  8. Réflexion sur l’origine du processus de segmentation du marche du travail

    Directory of Open Access Journals (Sweden)

    Attia Nicole

    2006-01-01

    Full Text Available (francuski Ce travail propose une réflexion sur l'origine du processus de segmentation du marché du travail par rapport à l'entreprise. Se situe-t-elle au sein même de l'entreprise ou en amont, c'est à dire entre les entreprises? Cela revient à se demander si on peut avoir une approche microéconomique ou macroéconomique de la segmentation et, à s'interroger sur le rôle réel tenu par les firmes dans le processus. Déterminant pour la théorie, ce rôle est à repenser selon la réponse apportée à notre question.

  9. Original Paper Performances comparées du HDL-cholestérol et du ...

    African Journals Online (AJOL)

    CT/HDL-C) et du HDL-Cholestérol est le meilleur prédicteur du SMet chez les adultes béninois. .... (Canada) et du. Ministère de la Santé du Bénin. Le consentement éclairé écrit a été obtenu de chaque participant avant leur recrutement dans.

  10. Régionalisation du recrutement du personnel de santé au Burkina ...

    International Development Research Centre (IDRC) Digital Library (Canada)

    Régionalisation du recrutement du personnel de santé au Burkina Faso ... le ministère a adopté une politique de recrutement régionalisé de certaines catégories du ... de comprendre le contexte dans lequel une telle stratégie a été formulée, ...

  11. 35 Typologie des eaux de surface du bassin du Sebou par multi ...

    African Journals Online (AJOL)

    PR BOKO

    2Service de protection de la qualité de l'eau, Agence du Bassin Hydraulique du ... pour montrer l'évolution de la qualité biologique des eaux de surface du ..... Biological Indicators of Freshwater Pollution and Environmental Management,.

  12. High performance flexible CMOS SOI FinFETs

    KAUST Repository

    Fahad, Hossain M.

    2014-06-01

    We demonstrate the first ever CMOS compatible soft etch back based high performance flexible CMOS SOI FinFETs. The move from planar to non-planar FinFETs has enabled continued scaling down to the 14 nm technology node. This has been possible due to the reduction in off-state leakage and reduced short channel effects on account of the superior electrostatic charge control of multiple gates. At the same time, flexible electronics is an exciting expansion opportunity for next generation electronics. However, a fully integrated low-cost system will need to maintain ultra-large-scale-integration density, high performance and reliability - same as today\\'s traditional electronics. Up until recently, this field has been mainly dominated by very weak performance organic electronics enabled by low temperature processes, conducive to low melting point plastics. Now however, we show the world\\'s highest performing flexible version of 3D FinFET CMOS using a state-of-the-art CMOS compatible fabrication technique for high performance ultra-mobile consumer applications with stylish design. © 2014 IEEE.

  13. LORINE: Neutron emission Locator by SOI detectors

    Energy Technology Data Exchange (ETDEWEB)

    Hamrita, H.; Kondrasovs, V.; Borbotte, J. M.; Normand, S. [CEA, LIST, Laboratoire Capteurs et Architectures Electronique, F-91191 Gif-sur-Yvette Cedex (France); Saurel, N. [CEA, DAM, VALDUC, F-21120 Is sur Tille (France)

    2009-07-01

    The aim of this work is to develop a fast Neutron Emission Locator based on silicon on Insulator detector (LORINE). This locator can be used in the presence of significant flux of gamma radiation. LORINE was developed to locate areas containing a significant amount of actinide during the dismantling operations of equipment. From the results obtained in laboratory, we have proposed the prototype of neutron emission locator as follows: the developed design consists of 5 SOI (Silicon-on-insulator) detectors (1*1 cm{sup 2}) with their charge preamplifiers and their respective converters. All are installed on 5 faces of a boron polyethylene cube (5*5*5 cm{sup 3}). This cube plays the role of neutron shielding between the several detectors. The design must be so compact for use in glove boxes. An electronic card based on micro-controller has been made to control sensors and to send the necessary information to the computer. Location of fast neutron sources does not yet exist in a so compact design and it can be operated in the presence of very important gamma radiation flux

  14. Caractérisation des sables et morphologie du fond du lac du ...

    African Journals Online (AJOL)

    Une analyse sédimentologique et minéralogique réalisée sur un cycle hydrologique entre octobre 2004 et août 2005 a permis d\\'évaluer les charges solides en suspension et de caractériser les sédiments du lac du barrage de Taabo. La concentration moyenne en matières en suspension (12 mg.L-1) et la turbidité ...

  15. Caractérisation des sables et morphologie du fond du lac du ...

    African Journals Online (AJOL)

    Administrateur

    Une analyse sédimentologique et minéralogique réalisée sur un cycle hydrologique entre octobre 2004 et août 2005 a permis d'évaluer les charges solides en suspension et de caractériser les sédiments du lac du barrage de Taabo. La concentration moyenne en matières en suspension (12 mg.L-1) et la turbidité ...

  16. Engagez-vous, devenez délégué(e) du personnel du CERN

    CERN Multimedia

    Staff Association

    2017-01-01

    Dans notre ECHO N° 275, nous avons annoncé les élections à venir au Conseil du personnel du CERN. Dans le présent ECHO, nous vous informons du lancement du processus des élections qui débute par le dépôt des candidatures. Tous les titulaires, boursiers et associés, qui sont aussi membres de l’Association du personnel, peuvent s’engager et déposer leur candidature entre le 11 septembre à 08 h 00 et le 13 octobre 2017 à 17 h 00. N’hésitez plus, remplissez le formulaire de candidature, présentez-vous aux élections au Conseil du personnel afin de pouvoir représenter et défendre vos collègues du personnel du CERN. ÊTRE DÉLÉGUÉ(E), C’EST QUOI ? Poser la question à plusieurs d...

  17. On-chip grating coupler array on the SOI platform for fan-in/fan-out of multi-core fibers with low insertion loss and crosstalk

    DEFF Research Database (Denmark)

    Ding, Yunhong; Ye, Feihong; Peucheret, Christophe

    2014-01-01

    We design and fabricate a compact multi-core fiber fan-in/fan-out using a fully-etched grating coupler array on the SOI platform. Lowest coupling loss of 6.8 dB with 3 dB bandwidth of 48 nm and crosstalk lower than ×32 dB are demonstrated.......We design and fabricate a compact multi-core fiber fan-in/fan-out using a fully-etched grating coupler array on the SOI platform. Lowest coupling loss of 6.8 dB with 3 dB bandwidth of 48 nm and crosstalk lower than ×32 dB are demonstrated....

  18. Ecologie du phytoplancton du lac Kivu

    Directory of Open Access Journals (Sweden)

    Sarmento, H.

    2008-01-01

    Full Text Available Speciation within the African Coffee Pathogen. Cet article analyse s'il est avantageux d'utiliser le compost au lieu de l'engrais minéral pour produire la laitue dans la zone urbaine et péri-urbaine de Yaoundé. Les résultats de terrain montrent l'obtention de rendements et profits plus élevés lorsqu'on utilise le compost. Les résultats de la fonction de production Cobb-Douglas prouvent que l'utilisation du compost est statistiquement significative pour expliquer la variation de rendement de la laitue et que le compost est l'intrant le plus productif. D'autres résultats montrent que le compost fournit la matière organique utile au sol et que les besoins d'irrigation en eau de la culture sont réduits grâce à l'utilisation du compost. Par conséquent, malgré le fait que l'application du compost demande une main-d'oeuvre beaucoup plus élevée, son utilisation est généralement bénéfique pour les agriculteurs vivant aux alentours de Yaoundé. Les programmes de vulgarisation de cet intrant pour encourager son adoption devraient donc figurer parmi les points prioritaires dans la politique agricole du gouvernement camerounais.

  19. Improving breakdown voltage performance of SOI power device with folded drift region

    Science.gov (United States)

    Qi, Li; Hai-Ou, Li; Ping-Jiang, Huang; Gong-Li, Xiao; Nian-Jiong, Yang

    2016-07-01

    A novel silicon-on-insulator (SOI) high breakdown voltage (BV) power device with interlaced dielectric trenches (IDT) and N/P pillars is proposed. In the studied structure, the drift region is folded by IDT embedded in the active layer, which results in an increase of length of ionization integral remarkably. The crowding phenomenon of electric field in the corner of IDT is relieved by the N/P pillars. Both traits improve two key factors of BV, the ionization integral length and electric field magnitude, and thus BV is significantly enhanced. The electric field in the dielectric layer is enhanced and a major portion of bias is borne by the oxide layer due to the accumulation of inverse charges (holes) at the corner of IDT. The average value of the lateral electric field of the proposed device reaches 60 V/μm with a 10 μm drift length, which increases by 200% in comparison to the conventional SOI LDMOS, resulting in a breakdown voltage of 607 V. Project supported by the Guangxi Natural Science Foundation of China (Grant Nos. 2013GXNSFAA019335 and 2015GXNSFAA139300), Guangxi Experiment Center of Information Science of China (Grant No. YB1406), Guangxi Key Laboratory of Wireless Wideband Communication and Signal Processing of China, Key Laboratory of Cognitive Radio and Information Processing (Grant No. GXKL061505), Guangxi Key Laboratory of Automobile Components and Vehicle Technology of China (Grant No. 2014KFMS04), and the National Natural Science Foundation of China (Grant Nos. 61361011, 61274077, and 61464003).

  20. A New Nonlinear Model of Body Resistance in Nanometer PD SOI MOSFETs

    Directory of Open Access Journals (Sweden)

    Arash Daghighi

    2011-01-01

    Full Text Available In this paper, a nonlinear model for the body resistance of a 45nm PD SOI MOSFET is developed. This model verified on the base of the small signal three-dimensional simulation results. In this paper by using the three-dimensional simulation of ISE-TCAD software, the indicating factors of body resistance in nanometer transistors and then are shown, using the surface potential model. A mathematical relation to calculat the body resistance incorporating device width and body potential was derived. Excellent agreement was obtained by comparing the model outputs and three-dimensional simulation results.

  1. Fiche technique du spermogramme et du spermocytogramme ...

    African Journals Online (AJOL)

    En Afrique la stérilité du couple constitue un drame social. Selon l'OMS, environ 8 à 12 % des couples africains sont touchés par une infertilité. La responsabilité masculine dans la stérilité est comprise entre 30 à 40%. Les causes de l'infertilité masculine peuvent être l'impuissance et/ ou l'altération du sperme. L'étude de ...

  2. One-dimensional breakdown voltage model of SOI RESURF lateral power device based on lateral linearly graded approximation

    International Nuclear Information System (INIS)

    Zhang Jun; Guo Yu-Feng; Xu Yue; Lin Hong; Yang Hui; Hong Yang; Yao Jia-Fei

    2015-01-01

    A novel one-dimensional (1D) analytical model is proposed for quantifying the breakdown voltage of a reduced surface field (RESURF) lateral power device fabricated on silicon on an insulator (SOI) substrate. We assume that the charges in the depletion region contribute to the lateral PN junctions along the diagonal of the area shared by the lateral and vertical depletion regions. Based on the assumption, the lateral PN junction behaves as a linearly graded junction, thus resulting in a reduced surface electric field and high breakdown voltage. Using the proposed model, the breakdown voltage as a function of device parameters is investigated and compared with the numerical simulation by the TCAD tools. The analytical results are shown to be in fair agreement with the numerical results. Finally, a new RESURF criterion is derived which offers a useful scheme to optimize the structure parameters. This simple 1D model provides a clear physical insight into the RESURF effect and a new explanation on the improvement in breakdown voltage in an SOI RESURF device. (paper)

  3. Fully-etched apodized fiber-to-chip grating coupler on the SOI platform with -0.78 dB coupling efficiency using photonic crystals and bonded Al mirror

    DEFF Research Database (Denmark)

    Ding, Yunhong; Ou, Haiyan; Peucheret, Christophe

    2014-01-01

    We design and fabricate an ultra-high coupling efficiency fully-etched apodized grating coupler on the SOI platform using photonic crystals and bonded aluminum mirror. Ultra-high coupling efficiency of -0.78 dB with a 3 dB bandwidth of 74 nm are demonstrated.......We design and fabricate an ultra-high coupling efficiency fully-etched apodized grating coupler on the SOI platform using photonic crystals and bonded aluminum mirror. Ultra-high coupling efficiency of -0.78 dB with a 3 dB bandwidth of 74 nm are demonstrated....

  4. A low specific on-resistance SOI MOSFET with dual gates and a recessed drain

    International Nuclear Information System (INIS)

    Luo Xiao-Rong; Hu Gang-Yi; Zhang Zheng-Yuan; Luo Yin-Chun; Fan Ye; Wang Xiao-Wei; Fan Yuan-Hang; Cai Jin-Yong; Wang Pei; Zhou Kun

    2013-01-01

    A low specific on-resistance (R on,sp ) integrable silicon-on-insulator (SOI) metal-oxide semiconductor field-effect transistor (MOSFET) is proposed and investigated by simulation. The MOSFET features a recessed drain as well as dual gates, which consist of a planar gate and a trench gate extended to the buried oxide layer (BOX) (DGRD MOSFET). First, the dual gates form dual conduction channels, and the extended trench gate also acts as a field plate to improve the electric field distribution. Second, the combination of the trench gate and the recessed drain widens the vertical conduction area and shortens the current path. Third, the P-type top layer not only enhances the drift doping concentration but also modulates the surface electric field distributions. All of these sharply reduce R on,sp and maintain a high breakdown voltage (BV). The BV of 233 V and R on,sp of 4.151 mΩ·cm 2 (V GS = 15 V) are obtained for the DGRD MOSFET with 15-μm half-cell pitch. Compared with the trench gate SOI MOSFET and the conventional MOSFET, R on,sp of the DGRD MOSFET decreases by 36% and 33% with the same BV, respectively. The trench gate extended to the BOX synchronously acts as a dielectric isolation trench, simplifying the fabrication processes. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  5. Mapping the broadband polarization properties of linear 2D SOI photonic crystal waveguides

    DEFF Research Database (Denmark)

    Canning, John; Skivesen, Nina; Kristensen, Martin

    2007-01-01

    Both quasi-TE and TM polarisation spectra for a silicon- on-insulator (SOI) waveguide are recorded over (1100-1700) nm using a broadband supercontinuum source. By studying both the input and output polarisation eigenstates we observe narrowband resonant cross coupling near the lowest quasi-TE mode...... cut-off. We also observe relatively broadband mixing between the two eigenstates to generate a complete photonic bandgap. By careful analysis of the output polarisation state we report on an inherent non-reciprocity between quasi TE and TM fundamental mode cross coupling. The nature of polarisation...

  6. Session du Conseil du CERN : le ministre britannique, Robert Jackson, souligne l'intérêt de on pays pour l'avenir du CERN : décisions du Conseil pour la mise en oeuvre des recommandations du Comité d'évaluation du CERN: départ anticipé pour 200 membres au moins du personnel - mise à jour de la méthode de calcule pour les contributions des Etats Membres au budget

    CERN Multimedia

    CERN Press Office. Geneva

    1988-01-01

    Session du Conseil du CERN : le ministre britannique, Robert Jackson, souligne l'intérêt de on pays pour l'avenir du CERN : décisions du Conseil pour la mise en oeuvre des recommandations du Comité d'évaluation du CERN: départ anticipé pour 200 membres au moins du personnel - mise à jour de la méthode de calcule pour les contributions des Etats Membres au budget

  7. Créer de la continuité : un travail en soi

    OpenAIRE

    Roux, Nicolas

    2014-01-01

    L’agriculture et le monde du spectacle disposent historiquement d’un cadre institutionnel favorisant le recours à la discontinuité de l’emploi. Au vu du développement des formes particulières d’emploi, il apparaît judicieux d’observer comment les saisonniers agricoles et les artistes du spectacle font face à la précarité et sécurisent leur parcours professionnel. En effet, à la recherche d’autonomie de ces salariés précaires s’oppose la vulnérabilité de leur situation sociale. Ils développent...

  8. Detection and Control of Spin-Orbit Interactions in a GaAs Hole Quantum Point Contact

    Science.gov (United States)

    Srinivasan, A.; Miserev, D. S.; Hudson, K. L.; Klochan, O.; Muraki, K.; Hirayama, Y.; Reuter, D.; Wieck, A. D.; Sushkov, O. P.; Hamilton, A. R.

    2017-04-01

    We investigate the relationship between the Zeeman interaction and the inversion-asymmetry-induced spin-orbit interactions (Rashba and Dresselhaus SOIs) in GaAs hole quantum point contacts. The presence of a strong SOI results in the crossing and anticrossing of adjacent spin-split hole subbands in a magnetic field. We demonstrate theoretically and experimentally that the anticrossing energy gap depends on the interplay between the SOI terms and the highly anisotropic hole g tensor and that this interplay can be tuned by selecting the crystal axis along which the current and magnetic field are aligned. Our results constitute the independent detection and control of the Dresselhaus and Rashba SOIs in hole systems, which could be of importance for spintronics and quantum information applications.

  9. Universal trench design method for a high-voltage SOI trench LDMOS

    Institute of Scientific and Technical Information of China (English)

    Hu Xiarong; Zhang Bo; Luo Xiaorong; Li Zhaoji

    2012-01-01

    The design method for a high-voltage SOl trench LDMOS for various trench permittivities,widths and depths is introduced.A universal method for efficient design is presented for the first time,taking the trade-off between breakdown voltage (BV) and specific on-resistance (Rs,on) into account.The high-k (relative permittivity)dielectric is suitable to fill a shallow and wide trench while the low-k dielectric is suitable to fill a deep and narrow trench.An SOI LDMOS with a vacuum trench in the drift region is also discussed.Simulation results show that the high FOM BV2/Rs,on can be achieved with a trench filled with the low-k dielectric due to its shortened cell-pitch.

  10. La population du Moyen-Orient et de l'Afrique du Nord contribue ...

    International Development Research Centre (IDRC) Digital Library (Canada)

    29 avr. 2016 ... Le degré d'apport au contenu varie grandement d'une population à l'autre. Si les habitants du Moyen-Orient et de l'Afrique du Nord (région MENA) utilisent Wikipédia, ils y contribuent cependant moins que les populations d'autres régions du monde. Le contenu au sujet de la région MENA est, le plus ...

  11. arXiv Charge collection properties in an irradiated pixel sensor built in a thick-film HV-SOI process

    CERN Document Server

    INSPIRE-00541780; Cindro, V.; Gorišek, A.; Hemperek, T.; Kishishita, T.; Kramberger, G.; Krüger, H.; Mandić, I.; Mikuž, M.; Wermes, N.; Zavrtanik, M.

    2017-10-25

    Investigation of HV-CMOS sensors for use as a tracking detector in the ATLAS experiment at the upgraded LHC (HL-LHC) has recently been an active field of research. A potential candidate for a pixel detector built in Silicon-On-Insulator (SOI) technology has already been characterized in terms of radiation hardness to TID (Total Ionizing Dose) and charge collection after a moderate neutron irradiation. In this article we present results of an extensive irradiation hardness study with neutrons up to a fluence of 1x10e16 neq/cm2. Charge collection in a passive pixelated structure was measured by Edge Transient Current Technique (E-TCT). The evolution of the effective space charge concentration was found to be compliant with the acceptor removal model, with the minimum of the space charge concentration being reached after 5x10e14 neq/cm2. An investigation of the in-pixel uniformity of the detector response revealed parasitic charge collection by the epitaxial silicon layer characteristic for the SOI design. The r...

  12. Néotoponymie contestée à Potchefstroom / Tlokwe (Province du Nord-Ouest, Afrique du Sud

    Directory of Open Access Journals (Sweden)

    Myriam Houssay-Holzschuch

    2010-09-01

    Full Text Available Illustration 1 - Extrait du site de la municipalité de Potchefstroom / TlokweSource : http://www.potch.co.za/newsarchive/streetnames.htmlIllustration 2- Potchefstroom (Afrique du SudAuteur : Béatrice Obry-Guyot, début décembre 2007.Illustration 3 - Extrait du plan Google Map de PotchefstroomSource : Google Map.La question toponymique en Afrique du Sud sur la longue durée porte sur deux thèmes essentiels porteurs de controverses : le plurilinguisme et le marquage symbolique et mémoriel du te...

  13. Ksenia Pimenova, Les sources de savoirs. Le renouveau du bouddhisme et du chamanisme chez les Touvas de la Sibérie du Sud

    OpenAIRE

    Pimenova, Ksenia

    2013-01-01

    Cette thèse présente une étude comparative du « renouveau » post-soviétique du chamanisme et du bouddhisme tibétain (école Guélougpa) chez les Touvas, un des peuples autochtones de la Sibérie du Sud (Russie). Ce phénomène a lieu après des décennies de politique antireligieuse (dès la fin des années 1920 jusqu’aux années 1980) ayant abouti à la destruction de la communauté bouddhique et à la marginalisation du chamanisme. Nous analysons le chamanisme et le bouddhisme post-soviétiques comme deu...

  14. Integrated circuits of silicon on insulator S.O.I. technologies: State of the art and perspectives

    International Nuclear Information System (INIS)

    Leray, J.L.; Dupont-Nivet, E.; Raffaelli, M.; Coic, Y.M.; Musseau, O.; Pere, J.F.; Lalande, P.; Bredy, J.; Auberton-Herve, A.J.; Bruel, M.; Giffard, B.

    1989-01-01

    Silicon On Insulator technologies have been proposed to increase the integrated circuits performances in radiation operation. Active researches are conducted, in France and abroad. This paper reviews briefly radiation effects phenomenology in that particular type of structure S.O.I. New results are presented that show very good radiation behaviour in term of speed, dose (10 to 100 megarad (Si)), dose rate and S.E.U. performances [fr

  15. Optimal Design of an Ultrasmall SOI-Based 1 × 8 Flat-Top AWG by Using an MMI

    Directory of Open Access Journals (Sweden)

    Hongqiang Li

    2013-01-01

    Full Text Available Four methods based on a multimode interference (MMI structure are optimally designed to flatten the spectral response of silicon-on-insulator- (SOI- based arrayed-waveguide grating (AWG applied in a demodulation integration microsystem. In the design for each method, SOI is selected as the material, the beam propagation method is used, and the performances (including the 3 dB passband width, the crosstalk, and the insertion loss of the flat-top AWG are studied. Moreover, the output spectrum responses of AWGs with or without a flattened structure are compared. The results show that low insertion loss, crosstalk, and a flat and efficient spectral response are simultaneously achieved for each kind of structure. By comparing the four designs, the design that combines a tapered MMI with tapered input/output waveguides, which has not been previously reported, was shown to yield better results than others. The optimized design reduced crosstalk to approximately −21.9 dB and had an insertion loss of −4.36 dB and a 3 dB passband width, that is, approximately 65% of the channel spacing.

  16. Bulletin du CRDI #124

    International Development Research Centre (IDRC) Digital Library (Canada)

    Les femmes jouent un rôle important dans les exploitations minières artisanales et à petite échelle en Afrique subsaharienne. De concert ... Couverture du livre: Une vie saine pour les femmes et les enfants vulnérables · Couverture du livre: Entre el activismo y la intervención · Couverture du livre: Revitalizing Health for All.

  17. Bulletin du CRDI #125

    International Development Research Centre (IDRC) Digital Library (Canada)

    L'IOSRS remporte le prix de la diplomatie scientifique · GrowInclusive : la plateforme tant attendue est en construction · Toutes les nouvelles. Activités à venir. Semaine du développement international 2018. Le CRDI célébrera la Semaine du développement international du 4 au 10 février 2018. Suivez-nous sur Twitter et ...

  18. Profils des porteurs du VIH/SIDA au début du traitement ...

    African Journals Online (AJOL)

    But : Décrire les profils des porteurs de VIH/sida au début du traitement antirétroviral. Matériels et méthode: Les dossiers des porteurs du VIH/sida de la région maritime ont été analysés de mai 2008 à avril 2009 par le comité thérapeutique. Résultats: Parmi les 641 dossiers analysés, 67,40% venaient du district de Yoto.

  19. Poorly Performing Physicians: Does the Script Concordance Test Detect Bad Clinical Reasoning?

    Science.gov (United States)

    Goulet, Francois; Jacques, Andre; Gagnon, Robert; Charlin, Bernard; Shabah, Abdo

    2010-01-01

    Introduction: Evaluation of poorly performing physicians is a worldwide concern for licensing bodies. The College des Medecins du Quebec currently assesses the clinical competence of physicians previously identified with potential clinical competence difficulties through a day-long procedure called the Structured Oral Interview (SOI). Two peer…

  20. A PD-SOI based DTI-LOCOS combined cross isolation technique for minimizing TID radiation induced leakage in high density memory

    International Nuclear Information System (INIS)

    Qiao Fengying; Pan Liyang; Wu Dong; Liu Lifang; Xu Jun

    2014-01-01

    In order to minimize leakage current increase under total ionizing dose (TID) radiation in high density memory circuits, a new isolation technique, combining deep trench isolation (DTI) between the wells, local oxidation of silicon (LOCOS) isolation between the devices within the well, and a P-diffused area in order to limit leakage at the isolation edge is implemented in partly-depleted silicon-on-insulator (PD-SOI) technology. This radiation hardening technique can minimize the layout area by more than 60%, and allows flexible placement of the body contact. Radiation hardened transistors and 256 Kb flash memory chips are designed and fabricated in a 0.6 μm PD-SOI process. Experiments show that no obvious increase in leakage current is observed for single transistors under 1 Mrad(Si) radiation, and that the 256 Kb memory chip still functions well after a TID of 100 krad(Si), with only 50% increase of the active power consumption in read mode. (semiconductor devices)

  1. Impact of underlap spacer region variation on electrostatic and analog performance of symmetrical high-k SOI FinFET at 20 nm channel length

    Science.gov (United States)

    Jain, Neeraj; Raj, Balwinder

    2017-12-01

    Continued scaling of CMOS technology to achieve high performance and low power consumption of semiconductor devices in the complex integrated circuits faces the degradation in terms of electrostatic integrity, short channel effects (SCEs), leakage currents, device variability and reliability etc. Nowadays, multigate structure has become the promising candidate to overcome these problems. SOI FinFET is one of the best multigate structures that has gained importance in all electronic design automation (EDA) industries due to its improved short channel effects (SCEs), because of its more effective gate-controlling capabilities. In this paper, our aim is to explore the sensitivity of underlap spacer region variation on the performance of SOI FinFET at 20 nm channel length. Electric field modulation is analyzed with spacer length variation and electrostatic performance is evaluated in terms of performance parameter like electron mobility, electric field, electric potential, sub-threshold slope (SS), ON current (I on), OFF current (I off) and I on/I off ratio. The potential benefits of SOI FinFET at drain-to-source voltage, V DS = 0.05 V and V DS = 0.7 V towards analog and RF design is also evaluated in terms of intrinsic gain (A V), output conductance (g d), trans-conductance (g m), gate capacitance (C gg), and cut-off frequency (f T = g m/2πC gg) with spacer region variations.

  2. Les effets du changement climatique dans le bassin du Congo : la ...

    International Development Research Centre (IDRC) Digital Library (Canada)

    22 avr. 2016 ... Dans le bassin du fleuve Congo, plus de 80 % des habitants vivent exclusivement de l'agriculture, de la pêche, de l'élevage et de la cueillette, qui sont des activités largement tributaires du climat.

  3. A novel partial SOI LDMOSFET with periodic buried oxide for breakdown voltage and self heating effect enhancement

    Science.gov (United States)

    Jamali Mahabadi, S. E.; Rajabi, Saba; Loiacono, Julian

    2015-09-01

    In this paper a partial silicon on insulator (PSOI) lateral double diffused metal oxide semiconductor field effect transistor (LDMOSFET) with periodic buried oxide layer (PBO) for enhancing breakdown voltage (BV) and self-heating effects (SHEs) is proposed for the first time. This new structure is called periodic buried oxide partial silicon on insulator (PBO-PSOI). In this structure, periodic small pieces of SiO2 were used as the buried oxide (BOX) layer in PSOI to modulate the electric field in the structure. It was demonstrated that the electric field is distributed more evenly by producing additional electric field peaks, which decrease the common peaks near the drain and gate junctions in the PBO-PSOI structure. Hence, the area underneath the electric field curve increases which leads to higher breakdown voltage. Also a p-type Si window was introduced in the source side to force the substrate to share the vertical voltage drop, leading to a higher vertical BV. Furthermore, the Si window under the source and those between periodic pieces of SiO2 create parallel conduction paths between the active layer and substrate thereby alleviating the SHEs. Simulations with the two dimensional ATLAS device simulator from the Silvaco suite of simulation tools show that the BV of PBO-PSOI is 100% higher than that of the conventional partial SOI (C-PSOI) structure. Furthermore the PBO-PSOI structure alleviates SHEs to a greater extent than its C-PSOI counterpart. The achieved drain current for the PBO-PSOI structure (100 μA), at drain-source voltage of VDS = 100 V and gate-source voltage of VGS = 25 V, is shown to be significantly larger than that in C-PSOI and fully depleted SOI (FD-SOI) structures (87 μA and 51 μA respectively). Drain current can be further improved at the expense of BV by increasing the doping of the drift region.

  4. (Sorghum bicolor (L.) Moench) du Nord du Burkina Faso

    African Journals Online (AJOL)

    SARAH

    29 déc. 2014 ... sorghos à grains sucrés ont un cycle court et arrivent donc à maturité avant les autres sorghos et le mil d'où leur exploitation comme aliment de soudure par les paysans. L'organisation de la diversité morphologique des accessions de sorghos à grains sucrés du Nord du. Burkina autour principalement des ...

  5. Etude de la transition ferroelectrique-ferroelastique du KD2PO4 forme du front de phase en fonction du gradient thermique

    OpenAIRE

    Kvítek, Zdeněk

    2010-01-01

    Etude de la transition ferroelectrique-ferroelastique du KD2PO4 forme du front de phase en fonction du gradient thermique The thesis explores complex process of first order transition of KD2PO4 crystal from tetragonal phase to ferroelectric - ferroelastic orthorhombic phase and back at temperature 209 K. The experimental set up of nitrogeneous cryostat allowes temperature and temperature gradient variations during simultaneous three axes optical sample observations, dielectric measurements. T...

  6. Les Cahiers du CREAD

    African Journals Online (AJOL)

    Admin

    politique de bas prix exercée par la Russie et le Qatar vient confirmer ce constat ; s'ajoute à cela l'entrée éventuelle du gaz non conven- tionnel, dont son prix actuel de 3/4 $US, offre aux USA l'opportunité d'être exportateur de ..... les compagnies à produire en matière du gaz naturel, tels le prix du gaz naturel, le prix des ...

  7. Growth and characterization of InP/GaAs on SOI by MOCVD

    International Nuclear Information System (INIS)

    Karam, N.H.; Haven, V.; Vernon, S.M.; Namavar, F.; El-Masry, N.; Haegel, N.; Al-Jassin, M.M.

    1990-01-01

    This paper reports that epitaxial InP films have been successfully deposited on GaAs coated silicon wafers with a buried oxide for the first time by MOCVD. The SOI wafers were prepared using the Separation by Implantation of Oxygen (SIMOX) process. The quality of InP on SIMOX is comparable to the best of InP on Si deposited in the same reactor. Preliminary results on defect reduction techniques such as Thermal Cycle Growth (TCG) show an order of magnitude increase in the photoluminescence intensity and a factor of five reduction in the defect density. TCG has been found more effective than Thermal Cycle Annealing (TCA) in improving the crystalline perfection and optical properties of the deposited films

  8. Aligning the unalignable: bacteriophage whole genome alignments.

    Science.gov (United States)

    Bérard, Sèverine; Chateau, Annie; Pompidor, Nicolas; Guertin, Paul; Bergeron, Anne; Swenson, Krister M

    2016-01-13

    In recent years, many studies focused on the description and comparison of large sets of related bacteriophage genomes. Due to the peculiar mosaic structure of these genomes, few informative approaches for comparing whole genomes exist: dot plots diagrams give a mostly qualitative assessment of the similarity/dissimilarity between two or more genomes, and clustering techniques are used to classify genomes. Multiple alignments are conspicuously absent from this scene. Indeed, whole genome aligners interpret lack of similarity between sequences as an indication of rearrangements, insertions, or losses. This behavior makes them ill-prepared to align bacteriophage genomes, where even closely related strains can accomplish the same biological function with highly dissimilar sequences. In this paper, we propose a multiple alignment strategy that exploits functional collinearity shared by related strains of bacteriophages, and uses partial orders to capture mosaicism of sets of genomes. As classical alignments do, the computed alignments can be used to predict that genes have the same biological function, even in the absence of detectable similarity. The Alpha aligner implements these ideas in visual interactive displays, and is used to compute several examples of alignments of Staphylococcus aureus and Mycobacterium bacteriophages, involving up to 29 genomes. Using these datasets, we prove that Alpha alignments are at least as good as those computed by standard aligners. Comparison with the progressive Mauve aligner - which implements a partial order strategy, but whose alignments are linearized - shows a greatly improved interactive graphic display, while avoiding misalignments. Multiple alignments of whole bacteriophage genomes work, and will become an important conceptual and visual tool in comparative genomics of sets of related strains. A python implementation of Alpha, along with installation instructions for Ubuntu and OSX, is available on bitbucket (https://bitbucket.org/thekswenson/alpha).

  9. L'action du CRDI — le développement du secteur privé

    International Development Research Centre (IDRC) Digital Library (Canada)

    Cathy Egan

    Le CRDI est du nombre. Il reconnaît depuis longtemps la valeur de l'industrie, des échanges et du commerce comme moteurs de la croissance économique. Grâce au soutien concret qu'il a accordé au développement du secteur privé, le CRDI a appris que deux types d'aide peuvent porter fruit : améliorer le con- texte dans ...

  10. 9- Ollo Pépin Hien.pmd

    African Journals Online (AJOL)

    chifaou.amzat

    20 août 2011 ... massifs interdisant souvent la satisfaction émotionnelle. Le travail ... La production de la beauté reflétait toujours la division sexuelle du travail. ...... Ce qui implique chez les actrices en scène un degré d'estime de soi, un ...

  11. Identification des matériaux et étude du bâti : l’exemple du Clos du Cotentin

    Directory of Open Access Journals (Sweden)

    Julien Deshayes

    2012-04-01

    Full Text Available Partant de l’architecture vernaculaire de la Presqu’île du Cotentin, cette étude s’attache à montrer comment l'identification des matériaux de construction, replacée dans une problématique historique, peut fournir un outil d'analyse privilégié du bâti, notamment en matière de chronologie. L'identification des principaux centres carriers et de leur aire d'exportation permet de mieux appréhender l'évolution des modénatures et de raisonner sur des typologies cohérentes. L'acquisition de tels critères d'analyse, peu généralisables hors de régions très délimitées, est nécessairement liée à une expérience prolongée du terrain. L’exemple du Clos du Cotentin offre, en matière d'identification des matériaux et d'étude du bâti, un manifeste en faveur d'une approche topographique approfondie, susceptible de replacer l'architecture rurale dans le cadre d'une évolution historique.Based on the vernacular architecture of the Cotentin peninsula, this article sets out to show how the identification of construction materials, placed in a historical context, can offer a particularly useful tool for analysing buildings, notably for their chronology. The identification of the principle stone quarries and their zones of commercial influence gives information on the evolution of architectural proportions and permits the development of coherent typologies. The acquisition of such analytical criteria is difficult to generalise beyond strictly limited regions and are necessarily linked with in-depth familiarity with the territory concerned. The example that the Clos du Cotentin offers for the identification of building materials and the study of buildings may be seen as a manifesto in favour of a detailed topographical approach, capable of placing rural architecture in the framework of its historical evolution.

  12. Dynamique des populations du foreur des tiges du cacaoyer ...

    African Journals Online (AJOL)

    Objectif : Le foreur de tiges du cacaoyer, Eulophonotus myrmeleon Felder cause aujourd'hui d'énormes dégâts dans les cacaoyères ivoiriennes. La présente étude vise à déterminer les périodes de fortes attaques de ce déprédateur dans la région du Haut-Sassandra, la deuxième plus grande région de production de ...

  13. Mixed logic style adder circuit designed and fabricated using SOI substrate for irradiation-hardened experiment

    Science.gov (United States)

    Yuan, Shoucai; Liu, Yamei

    2016-08-01

    This paper proposed a rail to rail swing, mixed logic style 28-transistor 1-bit full adder circuit which is designed and fabricated using silicon-on-insulator (SOI) substrate with 90 nm gate length technology. The main goal of our design is space application where circuits may be damaged by outer space radiation; so the irradiation-hardened technique such as SOI structure should be used. The circuit's delay, power and power-delay product (PDP) of our proposed gate diffusion input (GDI)-based adder are HSPICE simulated and compared with other reported high-performance 1-bit adder. The GDI-based 1-bit adder has 21.61% improvement in delay and 18.85% improvement in PDP, over the reported 1-bit adder. However, its power dissipation is larger than that reported with 3.56% increased but is still comparable. The worst case performance of proposed 1-bit adder circuit is also seen to be less sensitive to variations in power supply voltage (VDD) and capacitance load (CL), over a wide range from 0.6 to 1.8 V and 0 to 200 fF, respectively. The proposed and reported 1-bit full adders are all layout designed and wafer fabricated with other circuits/systems together on one chip. The chip measurement and analysis has been done at VDD = 1.2 V, CL = 20 fF, and 200 MHz maximum input signal frequency with temperature of 300 K.

  14. Operation of SOI P-Channel Field Effect Transistors, CHT-PMOS30, under Extreme Temperatures

    Science.gov (United States)

    Patterson, Richard; Hammoud, Ahmad

    2009-01-01

    Electronic systems are required to operate under extreme temperatures in NASA planetary exploration and deep space missions. Electronics on-board spacecraft must also tolerate thermal cycling between extreme temperatures. Thermal management means are usually included in today s spacecraft systems to provide adequate temperature for proper operation of the electronics. These measures, which may include heating elements, heat pipes, radiators, etc., however add to the complexity in the design of the system, increases its cost and weight, and affects its performance and reliability. Electronic parts and circuits capable of withstanding and operating under extreme temperatures would reflect in improvement in system s efficiency, reducing cost, and improving overall reliability. Semiconductor chips based on silicon-on-insulator (SOI) technology are designed mainly for high temperature applications and find extensive use in terrestrial well-logging fields. Their inherent design offers advantages over silicon devices in terms of reduced leakage currents, less power consumption, faster switching speeds, and good radiation tolerance. Little is known, however, about their performance at cryogenic temperatures and under wide thermal swings. Experimental investigation on the operation of SOI, N-channel field effect transistors under wide temperature range was reported earlier [1]. This work examines the performance of P-channel devices of these SOI transistors. The electronic part investigated in this work comprised of a Cissoid s CHT-PMOS30, high temperature P-channel MOSFET (metal-oxide semiconductor field-effect transistor) device [2]. This high voltage, medium-power transistor is designed for geothermal well logging applications, aerospace and avionics, and automotive industry, and is specified for operation in the temperature range of -55 C to +225 C. Table I shows some specifications of this transistor [2]. The CHT-PMOS30 device was characterized at various temperatures

  15. Le Developmental Entrepreneurship Program du Massachusetts ...

    International Development Research Centre (IDRC) Digital Library (Canada)

    Faire en sorte que les étudiants venant des pays en développement pour étudier au MIT retournent ensuite dans leurs pays respectifs afin d'y concrétiser leurs idées est un souci majeur du MIT, des bailleurs de fonds et du milieu du développement. Ce projet palliera à ce souci en soutenant la formation des fellows du ...

  16. Error-free Dispersion-uncompensated Transmission at 20 Gb/s over SSMF using a Hybrid III-V/SOI DML with MRR Filtering

    DEFF Research Database (Denmark)

    Cristofori, Valentina; Kamchevska, Valerija; Ding, Yunhong

    2016-01-01

    Error-free 20-Gb/s directly-modulated transmission is achieved by enhancing the dispersion tolerance of a III-V/SOI DFB laser with a silicon micro-ring resonator. Low (∼0.4 dB) penalty compared to back-to-back without ring is demonstrated after 5-km SSMF....

  17. "Cirque du Freak."

    Science.gov (United States)

    Rivett, Miriam

    2002-01-01

    Considers the marketing strategies that underpin the success of the "Cirque du Freak" series. Describes how "Cirque du Freak" is an account of events in the life of schoolboy Darren Shan. Notes that it is another reworking of the vampire narrative, a sub-genre of horror writing that has proved highly popular with both adult and…

  18. Suivi après le traitement du cancer du sein

    Science.gov (United States)

    Sisler, Jeffrey; Chaput, Geneviève; Sussman, Jonathan; Ozokwelu, Emmanuel

    2016-01-01

    Résumé Objectif Offrir aux médecins de famille un résumé des recommandations fondées sur les données probantes pour guider les soins aux survivantes traitées pour le cancer du sein. Qualité des données Une recherche documentaire a été effectuée dans MEDLINE entre 2000 et 2016 à l’aide des mots-clés anglais suivants : breast cancer, survivorship, follow-up care, aftercare, guidelines et survivorship care plans, en se concentrant sur la revue des lignes directrices publiées récemment par les organismes nationaux de cancérologie. Les données étaient de niveaux I à III. Message principal Les soins aux survivantes comportent 4 facettes : surveillance et dépistage, prise en charge des effets à long terme, promotion de la santé et coordination des soins. La surveillance des récidives ne se traduit que par une mammographie annuelle, et le dépistage d’autres cancers doit suivre les lignes directrices basées sur la population. La prise en charge des effets à long terme du cancer et de son traitement aborde des problèmes courants tels la douleur, la fatigue, le lymphœdème, la détresse et les effets indésirables des médicaments, de même que les préoccupations à long terme comme la santé du cœur et des os. La promotion de la santé met en relief les bienfaits de l’activité chez les survivantes du cancer, avec l’accent mis sur l’activité physique. Les soins aux survivantes sont de meilleure qualité lorsque divers services et professionnels de la santé participent aux soins, et le médecin de famille joue un rôle important dans la coordination des soins. Conclusion Les médecins de famille sont de plus en plus souvent les principaux fournisseurs de soins de suivi après le traitement du cancer du sein. Le cancer du sein doit être considéré comme une affection médicale chronique, même chez les femmes en rémission, et les patientes profitent de la même approche que celle utilisée pour les autres affections chroniques en

  19. ETUDE DU COMPORTEMENT MECANIQUE DU BETON CELLULAIRE AUTOCLAVE PRODUIT EN ALGERIE

    Directory of Open Access Journals (Sweden)

    R BELOUETTAR

    2002-12-01

    Full Text Available Ce travail présente une étude expérimentale du comportement mécanique du béton cellulaire autoclavé. L’étude est portée essentiellement sur une série d’essais mécaniques en compression quasistatique à différentes vitesses de déformation variables entre 10-4 s-1 et 10 s-1 et à deux états différents (état sec et état saturé d’eau. En général, l’augmentation de la vitesse de déformation donne une augmentation de la contrainte critique du béton cellulaire autoclavé. Le béton cellulaire autoclavé présente une sensibilité à la vitesse de déformation positive. La valeur du module d’élasticité est proche de la valeur standard (1.5 GPa pour un béton cellulaire autoclavé de masse volumique égale à 500-550 kg/m3.

  20. Dynamique des populations du foreur des tiges du cacaoyer ...

    African Journals Online (AJOL)

    SARAH

    30 nov. 2014 ... déprédateur dans la région du Haut-Sassandra, la deuxième plus grande région de production de cacao en. Côte d'ivoire. Méthodologie et résultats : L'étude a été réalisée de 2009 à 2013 dans les plantations villageoises de la région du Haut-Sassandra en Côte d'Ivoire. Les variations des taux d'attaques ...

  1. Conference - La discipline positive

    CERN Multimedia

    Staff Association

    2018-01-01

    Eduquer avec fermeté et bienveillance Véronique Genevay Jeudi 31 mai à 19h00 CERN Meyrin, Salle du Conseil 503-1-001 Venez vous familiariser avec la pensée et le positionnement développé dans la discipline positive. Une approche ni permissive, ni punitive, qui vise à enseigner aux enfants des compétences comme la confiance en soi, l’autonomie, le respect de soi-même et le respect mutuel, la responsabilité, la coopération… Inscrivez-vous : https://indico.cern.ch/e/disciplinepositive   Pour plus d’informations : staff.association@cern.ch ou (+41) 022 766 37 38

  2. Conférence - La discipline positive

    CERN Multimedia

    Staff Association

    2018-01-01

    Eduquer avec fermeté et bienveillance Véronique Genevay Jeudi 31 mai à 19h00 CERN Meyrin, Salle du Conseil 503-1-001 Venez vous familiariser avec la pensée et le positionnement développé dans la discipline positive. Une approche ni permissive, ni punitive, qui vise à enseigner aux enfants des compétences comme la confiance en soi, l’autonomie, le respect de soi-même et le respect mutuel, la responsabilité, la coopération… Inscrivez-vous : https://indico.cern.ch/e/disciplinepositive   Pour plus d’informations : staff.association@cern.ch ou (+41) 022 766 37 38

  3. Fabrication and simulation of single crystal p-type Si nanowire using SOI technology

    International Nuclear Information System (INIS)

    Dehzangi, Arash; Larki, Farhad; Naseri, Mahmud G.; Navasery, Manizheh; Majlis, Burhanuddin Y.; Razip Wee, Mohd F.; Halimah, M.K.; Islam, Md. Shabiul; Md Ali, Sawal H.; Saion, Elias

    2015-01-01

    Highlights: • Single crystal silicon nanowire is fabricated on Si on insulator substrate, using atomic force microscope (AFM) nanolithography and KOH + IPA chemical wet etching. • Some of major parameters in fabrication process, such as writing speed and applied voltage along with KOH etching depth are investigated, and then the I–V characteristic of Si nanowires is measured. • For better understanding of the charge transmission through the nanowire, 3D-TCAD simulation is performed to simulate the Si nanowires with the same size of the fabricated ones, and variation of majority and minority carriers, hole quasi-Fermi level and generation/recombination rate are investigated. - Abstract: Si nanowires (SiNWs) as building blocks for nanostructured materials and nanoelectronics have attracted much attention due to their major role in device fabrication. In the present work a top-down fabrication approach as atomic force microscope (AFM) nanolithography was performed on Si on insulator (SOI) substrate to fabricate a single crystal p-type SiNW. To draw oxide patterns on top of the SOI substrate local anodic oxidation was carried out by AFM in contact mode. After the oxidation procedure, an optimized solution of 30 wt.% KOH with 10 vol.% IPA for wet etching at 63 °C was applied to extract the nanostructure. The fabricated SiNW had 70–85 nm full width at half maximum width, 90 nm thickness and 4 μm length. The SiNW was simulated using Sentaurus 3D software with the exact same size of the fabricated device. I–V characterization of the SiNW was measured and compared with simulation results. Using simulation results variation of carrier's concentrations, valence band edge energy and recombination generation rate for different applied voltage were investigated

  4. Fabrication and simulation of single crystal p-type Si nanowire using SOI technology

    Energy Technology Data Exchange (ETDEWEB)

    Dehzangi, Arash, E-mail: arashd53@hotmail.com [Institute of Microengineering and Nanoelectronics (IMEN), Universiti Kebangsaan Malaysia, 43600 Bangi, Selangor (Malaysia); Larki, Farhad [Institute of Microengineering and Nanoelectronics (IMEN), Universiti Kebangsaan Malaysia, 43600 Bangi, Selangor (Malaysia); Naseri, Mahmud G. [Department of Physics, Faculty of Science, Malayer University, Malayer, Hamedan (Iran, Islamic Republic of); Navasery, Manizheh [Department of Physics, Faculty of Science, Universiti Putra Malaysia, 43400 Serdang, Selangor (Malaysia); Majlis, Burhanuddin Y.; Razip Wee, Mohd F. [Institute of Microengineering and Nanoelectronics (IMEN), Universiti Kebangsaan Malaysia, 43600 Bangi, Selangor (Malaysia); Halimah, M.K. [Department of Physics, Faculty of Science, Universiti Putra Malaysia, 43400 Serdang, Selangor (Malaysia); Islam, Md. Shabiul; Md Ali, Sawal H. [Institute of Microengineering and Nanoelectronics (IMEN), Universiti Kebangsaan Malaysia, 43600 Bangi, Selangor (Malaysia); Saion, Elias [Department of Physics, Faculty of Science, Universiti Putra Malaysia, 43400 Serdang, Selangor (Malaysia)

    2015-04-15

    Highlights: • Single crystal silicon nanowire is fabricated on Si on insulator substrate, using atomic force microscope (AFM) nanolithography and KOH + IPA chemical wet etching. • Some of major parameters in fabrication process, such as writing speed and applied voltage along with KOH etching depth are investigated, and then the I–V characteristic of Si nanowires is measured. • For better understanding of the charge transmission through the nanowire, 3D-TCAD simulation is performed to simulate the Si nanowires with the same size of the fabricated ones, and variation of majority and minority carriers, hole quasi-Fermi level and generation/recombination rate are investigated. - Abstract: Si nanowires (SiNWs) as building blocks for nanostructured materials and nanoelectronics have attracted much attention due to their major role in device fabrication. In the present work a top-down fabrication approach as atomic force microscope (AFM) nanolithography was performed on Si on insulator (SOI) substrate to fabricate a single crystal p-type SiNW. To draw oxide patterns on top of the SOI substrate local anodic oxidation was carried out by AFM in contact mode. After the oxidation procedure, an optimized solution of 30 wt.% KOH with 10 vol.% IPA for wet etching at 63 °C was applied to extract the nanostructure. The fabricated SiNW had 70–85 nm full width at half maximum width, 90 nm thickness and 4 μm length. The SiNW was simulated using Sentaurus 3D software with the exact same size of the fabricated device. I–V characterization of the SiNW was measured and compared with simulation results. Using simulation results variation of carrier's concentrations, valence band edge energy and recombination generation rate for different applied voltage were investigated.

  5. La longue marche du mouvement sportif camerounais : l'émergence du Comité Olympique Camerounais (1946–1964

    Directory of Open Access Journals (Sweden)

    Charitas Pascal

    2016-01-01

    Dans ces conditions et selon le statut particulier de ce territoire du « pré-carré » africain de la France, il s'agit de comprendre les étapes de l'institutionnalisation du sport camerounais au sein des atermoiements de la colonisation française puis les processus à l'œuvre dans l'émergence puis la création du Comité Olympique Camerounais (COC, symbole de l'émancipation du sport camerounais et marqueur de son intégration sur la scène sportive internationale, plus particulièrement olympique. Autrement dit, de 1946 et la mise sous tutelle par l'ONU du Cameroun français pour sa partie orientale à 1964 et la première participation du CNO du Cameroun aux Jeux olympiques de Tokyo, l'objectif est de saisir ici le passage d'un sport colonial à un sport postcolonial mettant en exergue le rôle de l'influence française et le rôle des cadres camerounais du secteur sportif.

  6. A silicon doped hafnium oxide ferroelectric p–n–p–n SOI tunneling field–effect transistor with steep subthreshold slope and high switching state current ratio

    Directory of Open Access Journals (Sweden)

    Saeid Marjani

    2016-09-01

    Full Text Available In this paper, a silicon–on–insulator (SOI p–n–p–n tunneling field–effect transistor (TFET with a silicon doped hafnium oxide (Si:HfO2 ferroelectric gate stack is proposed and investigated via 2D device simulation with a calibrated nonlocal band–to–band tunneling model. Utilization of Si:HfO2 instead of conventional perovskite ferroelectrics such as lead zirconium titanate (PbZrTiO3 and strontium bismuth tantalate (SrBi2Ta2O9 provides compatibility to the CMOS process as well as improved device scalability. By using Si:HfO2 ferroelectric gate stack, the applied gate voltage is effectively amplified that causes increased electric field at the tunneling junction and reduced tunneling barrier width. Compared with the conventional p–n–p–n SOI TFET, the on–state current and switching state current ratio are appreciably increased; and the average subthreshold slope (SS is effectively reduced. The simulation results of Si:HfO2 ferroelectric p–n–p–n SOI TFET show significant improvement in transconductance (∼9.8X enhancement at high overdrive voltage and average subthreshold slope (∼35% enhancement over nine decades of drain current at room temperature, indicating that this device is a promising candidate to strengthen the performance of p–n–p–n and conventional TFET for a switching performance.

  7. Sådan kan du bruge optioner og futures

    DEFF Research Database (Denmark)

    Kohl, Niklas

    2017-01-01

    Masterclass. Har du brug for at forsikre værdierne i din portefølje i en periode, hvor du forventer stor uro på finansmarkederne, kan du gøre det med optioner eller futures. Her kan du læse om de forskellige typer – og om de muligheder de giver dig.......Masterclass. Har du brug for at forsikre værdierne i din portefølje i en periode, hvor du forventer stor uro på finansmarkederne, kan du gøre det med optioner eller futures. Her kan du læse om de forskellige typer – og om de muligheder de giver dig....

  8. AlignMe—a membrane protein sequence alignment web server

    Science.gov (United States)

    Stamm, Marcus; Staritzbichler, René; Khafizov, Kamil; Forrest, Lucy R.

    2014-01-01

    We present a web server for pair-wise alignment of membrane protein sequences, using the program AlignMe. The server makes available two operational modes of AlignMe: (i) sequence to sequence alignment, taking two sequences in fasta format as input, combining information about each sequence from multiple sources and producing a pair-wise alignment (PW mode); and (ii) alignment of two multiple sequence alignments to create family-averaged hydropathy profile alignments (HP mode). For the PW sequence alignment mode, four different optimized parameter sets are provided, each suited to pairs of sequences with a specific similarity level. These settings utilize different types of inputs: (position-specific) substitution matrices, secondary structure predictions and transmembrane propensities from transmembrane predictions or hydrophobicity scales. In the second (HP) mode, each input multiple sequence alignment is converted into a hydrophobicity profile averaged over the provided set of sequence homologs; the two profiles are then aligned. The HP mode enables qualitative comparison of transmembrane topologies (and therefore potentially of 3D folds) of two membrane proteins, which can be useful if the proteins have low sequence similarity. In summary, the AlignMe web server provides user-friendly access to a set of tools for analysis and comparison of membrane protein sequences. Access is available at http://www.bioinfo.mpg.de/AlignMe PMID:24753425

  9. Paysans du Brésil

    Directory of Open Access Journals (Sweden)

    Dominique Temple

    2007-01-01

    Full Text Available Eric Sabourin, « Paysans du Brésil : Entre échange marchand et réciprocité » Paris, Editions Quae, 241p, 30 euros, (préface de Maxime Haubert, 2007Dans la présentation du livre, Maxime Haubert dit :«Cet ouvrage propose une analyse socio-anthropologique et agronomique des sociétés rurales et paysannes du Brésil et des transformations qu'elles ont connues ces dernières décennies, en particulier face aux interventions de l'Etat et à l'expansion du marché capitaliste (.... «Le livre pose d'abor...

  10. Communication du Service juridique et du Département HR à l'attention des membres du personnel domiciliés en France

    CERN Multimedia

    HR Department

    2007-01-01

    Déclaration de revenus 2006 Les membres du personnel trouveront ci-après les informations nécessaires sur la manière de remplir la déclaration de revenus 2006, qui doit être retournée au plus tard le 31 mai 2007. Qui doit remplir la déclaration? Comment l'obtenir? Tous les membres du personnel1) domiciliés en France2), qu'ils soient ou non de nationalité française, doivent remplir la déclaration de revenus 2006 sur la base des présentes instructions et la renvoyer signée, au plus tard le 31 mai 2007, au centre des impôts de leur domicile. Les membres du personnel devraient recevoir la déclaration de revenus 2006 fin avril - début mai. Ceux qui ne la recevraient pas directement devront la retirer au centre des impôts, à la trésorerie ou à la mairie de leur domicile ou bien encore la télécharger sur le site internet du Ministère des Finances (www.finances.gouv.fr). Comment remplir la déclaration Les membres du personnel doivent remplir la DECLARATION PAPIER uniquement. Dé...

  11. GraphAlignment: Bayesian pairwise alignment of biological networks

    Directory of Open Access Journals (Sweden)

    Kolář Michal

    2012-11-01

    Full Text Available Abstract Background With increased experimental availability and accuracy of bio-molecular networks, tools for their comparative and evolutionary analysis are needed. A key component for such studies is the alignment of networks. Results We introduce the Bioconductor package GraphAlignment for pairwise alignment of bio-molecular networks. The alignment incorporates information both from network vertices and network edges and is based on an explicit evolutionary model, allowing inference of all scoring parameters directly from empirical data. We compare the performance of our algorithm to an alternative algorithm, Græmlin 2.0. On simulated data, GraphAlignment outperforms Græmlin 2.0 in several benchmarks except for computational complexity. When there is little or no noise in the data, GraphAlignment is slower than Græmlin 2.0. It is faster than Græmlin 2.0 when processing noisy data containing spurious vertex associations. Its typical case complexity grows approximately as O(N2.6. On empirical bacterial protein-protein interaction networks (PIN and gene co-expression networks, GraphAlignment outperforms Græmlin 2.0 with respect to coverage and specificity, albeit by a small margin. On large eukaryotic PIN, Græmlin 2.0 outperforms GraphAlignment. Conclusions The GraphAlignment algorithm is robust to spurious vertex associations, correctly resolves paralogs, and shows very good performance in identification of homologous vertices defined by high vertex and/or interaction similarity. The simplicity and generality of GraphAlignment edge scoring makes the algorithm an appropriate choice for global alignment of networks.

  12. A three-dimensional breakdown model of SOI lateral power transistors with a circular layout

    International Nuclear Information System (INIS)

    Guo Yufeng; Wang Zhigong; Sheu Gene

    2009-01-01

    This paper presents an analytical three-dimensional breakdown model of SOI lateral power devices with a circular layout. The Poisson equation is solved in cylindrical coordinates to obtain the radial surface potential and electric field distributions for both fully- and partially-depleted drift regions. The breakdown voltages for N + N and P + N junctions are derived and employed to investigate the impact of cathode region curvature. A modified RESURF criterion is proposed to provide a design guideline for optimizing the breakdown voltage and doping concentration in the drift region in three dimensional space. The analytical results agree well with MEDICI simulation results and experimental data from earlier publications. (semiconductor devices)

  13. 26 Calcul multi-caractéristique du coût du non-qualité via la fonction ...

    African Journals Online (AJOL)

    PR BOKO

    Le coût du non - qualité (CNQ) est un indicateur permettant l'estimation de la marge ..... multicritères de Taguchi en fonction de l'évolution du poids et capacité du ... A Scheduling Example; International Journal of Information and Management.

  14. Cartes infographiques du Symposium Afrique de l'Ouest et du Centre

    International Development Research Centre (IDRC) Digital Library (Canada)

    fdieudonne

    VILLES SÛRES ET INCLUSIVES | AFRIQUE DE L'OUEST ET DU CENTRE. Spécificités de violence, d'exclusion, et de lutte contre la criminalité. République démocratique du Congo: Taux de natalité par femme, en moyenne 10 enfants, très élevé. Exclusion sociale exacerbée : des jeunes enfants accusés de sorcellerie.

  15. Analysis of silicon on insulator (SOI) optical microring add-drop filter based on waveguide intersections

    Science.gov (United States)

    Kaźmierczak, Andrzej; Bogaerts, Wim; Van Thourhout, Dries; Drouard, Emmanuel; Rojo-Romeo, Pedro; Giannone, Domenico; Gaffiot, Frederic

    2008-04-01

    We present a compact passive optical add-drop filter which incorporates two microring resonators and a waveguide intersection in silicon-on-insulator (SOI) technology. Such a filter is a key element for designing simple layouts of highly integrated complex optical networks-on-chip. The filter occupies an area smaller than 10μm×10μm and exhibits relatively high quality factors (up to 4000) and efficient signal dropping capabilities. In the present work, the influence of filter parameters such as the microring-resonators radii and the coupling section shape are analyzed theoretically and experimentally

  16. Intrinsic Nonlinearities and Layout Impacts of 100 V Integrated Power MOSFETs in Partial SOI Process

    DEFF Research Database (Denmark)

    Fan, Lin; Knott, Arnold; Jørgensen, Ivan Harald Holger

    Parasitic capacitances of power semiconductors are a part of the key design parameters of state-of-the-art very high frequency (VHF) power supplies. In this poster, four 100 V integrated power MOSFETs with different layout structures are designed, implemented, and analyzed in a 0.18 ȝm partial...... Silicon-on-Insulator (SOI) process with a die area 2.31 mm2.  A small-signal model of power MOSFETs is proposed to systematically analyze the nonlinear parasitic capacitances in different transistor states: off-state, sub-threshold region, and on-state in the linear region. 3D plots are used to summarize...

  17. MUON DETECTORS: ALIGNMENT

    CERN Multimedia

    G.Gomez.

    Since June of 2009, the muon alignment group has focused on providing new alignment constants and on finalizing the hardware alignment reconstruction. Alignment constants for DTs and CSCs were provided for CRAFT09 data reprocessing. For DT chambers, the track-based alignment was repeated using CRAFT09 cosmic ray muons and validated using segment extrapolation and split cosmic tools. One difference with respect to the previous alignment is that only five degrees of freedom were aligned, leaving the rotation around the local x-axis to be better determined by the hardware system. Similarly, DT chambers poorly aligned by tracks (due to limited statistics) were aligned by a combination of photogrammetry and hardware-based alignment. For the CSC chambers, the hardware system provided alignment in global z and rotations about local x. Entire muon endcap rings were further corrected in the transverse plane (global x and y) by the track-based alignment. Single chamber track-based alignment suffers from poor statistic...

  18. Protéger les collectivités côtières du nord du Maroc | CRDI - Centre ...

    International Development Research Centre (IDRC) Digital Library (Canada)

    3 févr. 2011 ... Élévation du niveau de la mer, ondes de tempête, inondations littorales : les ... Un plan d'action en matière de gestion intégrée du littoral et une nouvelle ... du territoire sans recourir à un guide de la dynamique du milieu côtier. ... local, et encore moins de contrôle sur les terres dont elles sont tributaires.

  19. An analytical threshold voltage model for a short-channel dual-metal-gate (DMG) recessed-source/drain (Re-S/D) SOI MOSFET

    Science.gov (United States)

    Saramekala, G. K.; Santra, Abirmoya; Dubey, Sarvesh; Jit, Satyabrata; Tiwari, Pramod Kumar

    2013-08-01

    In this paper, an analytical short-channel threshold voltage model is presented for a dual-metal-gate (DMG) fully depleted recessed source/drain (Re-S/D) SOI MOSFET. For the first time, the advantages of recessed source/drain (Re-S/D) and of dual-metal-gate structure are incorporated simultaneously in a fully depleted SOI MOSFET. The analytical surface potential model at Si-channel/SiO2 interface and Si-channel/buried-oxide (BOX) interface have been developed by solving the 2-D Poisson’s equation in the channel region with appropriate boundary conditions assuming parabolic potential profile in the transverse direction of the channel. Thereupon, a threshold voltage model is derived from the minimum surface potential in the channel. The developed model is analyzed extensively for a variety of device parameters like the oxide and silicon channel thicknesses, thickness of source/drain extension in the BOX, control and screen gate length ratio. The validity of the present 2D analytical model is verified with ATLAS™, a 2D device simulator from SILVACO Inc.

  20. Fabrication of SGOI material by oxidation of an epitaxial SiGe layer on an SOI wafer with H ions implantation

    International Nuclear Information System (INIS)

    Cheng Xinli; Chen Zhijun; Wang Yongjin; Jin Bo; Zhang Feng; Zou Shichang

    2005-01-01

    SGOI materials were fabricated by thermal dry oxidation of epitaxial H-ion implanted SiGe layers on SOI wafers. The hydrogen implantation was found to delay the oxidation rate of SiGe layer and to decrease the loss of Ge atoms during oxidation. Further, the H implantation did not degrade the crystallinity of SiGe layer during fabrication of the SGOI

  1. Mechanisms of Low-Energy Operation of XCT-SOI CMOS Devices—Prospect of Sub-20-nm Regime

    Directory of Open Access Journals (Sweden)

    Yasuhisa Omura

    2014-01-01

    Full Text Available This paper describes the performance prospect of scaled cross-current tetrode (XCT CMOS devices and demonstrates the outstanding low-energy aspects of sub-30-nm-long gate XCT-SOI CMOS by analyzing device operations. The energy efficiency improvement of such scaled XCT CMOS circuits (two orders higher stems from the “source potential floating effect”, which offers the dynamic reduction of effective gate capacitance. It is expected that this feature will be very important in many medical implant applications that demand a long device lifetime without recharging the battery.

  2. L’identité : perspectives développementales

    OpenAIRE

    Cohen-Scali, Valérie; Guichard, Jean

    2011-01-01

    En 1950, Erikson fut le premier à proposer une théorisation du concept d’identité dans le champ de la psychologie du développement. Il établit alors des distinctions entre « identité du moi » (ou ego identité), « identité personnelle » et « identité de groupe ». Ses considérations sur le développement de l’identité tout au long de la vie, sur la multiplicité des « soi », sur les dimensions « ego-identitaires » de groupes font de lui l’un des précurseurs des analyses actuelles. Au milieu des a...

  3. Effets du travail du sol sur le comportement chimique et biologique ...

    African Journals Online (AJOL)

    SARAH

    31 juil. 2017 ... RESUME. Objectif : L'objectif de cette étude est de comparer les effets de six techniques culturales de mise en place du blé tendre sur certaines propriétés chimiques et biologiques du sol et les conséquences sur le rendement grain et ses composantes dans la région «non chernozem» en 7ème années ...

  4. Coordonnateur du bureau d'assistance | CRDI - Centre de ...

    International Development Research Centre (IDRC) Digital Library (Canada)

    Résumé des fonctions. En tant que membre de l'équipe du Bureau d'assistance au sein de la Section du service à la clientèle (SSC), le coordonnateur du Bureau d'assistance offre au personnel du Centre et aux autres utilisateurs reconnus des installations TI du Centre un soutien de première ligne en matière d'utilisation ...

  5. Effect of the Ion Mass and Energy on the Response of 70-nm SOI Transistors to the Ion Deposited Charge by Direct Ionization

    International Nuclear Information System (INIS)

    Raine, M.; Gaillardin, M.; Sauvestre, J.E.; Flament, O.; Bournel, A.; Aubry-Fortuna, V.

    2010-01-01

    The response of SOI transistors under heavy ion irradiation is analyzed using Geant4 and Synopsys Sentaurus device simulations. The ion mass and energy have a significant impact on the radial ionization profile of the ion deposited charge. For example, for an identical LET, the higher the ion energy per nucleon, the wider the radial ionization track. For a 70-nm SOI technology, the track radius of high energy ions (≥ 10 MeV/a) is larger than the transistor sensitive volume; part of the ion charge recombines in the highly doped source or drain regions and does not participate to the transistor electric response. At lower energy (≤ 10 MeV/a), as often used for ground testing, the track radius is smaller than the transistor sensitive volume, and the entire charge is used for the transistor response. The collected charge is then higher, corresponding to a worst-case response of the transistor. Implications for the hardness assurance of highly-scaled generations are discussed. (authors)

  6. Mouvements de terrain et urbanisation le long du Criş Repede en amont de la ville d'Oradea (Roumanie

    Directory of Open Access Journals (Sweden)

    Christelle Sosson

    2008-01-01

    Full Text Available Dans la partie est de la ville d'Oradea et sur la rive droite du Criş Repede, un nouveau quartier résidentiel est en construction sur le versant sud des Collines d'Oradea. Les nouvelles maisons sont réparties suivant deux alignements : un sur le sommet de l'interfluve et l'autre, plus dense, au pied du versant. Entre ces deux alignements, on trouve des jardins et des cultures en terrasses. Ce versant verdoyant et peu éloigné du centre urbain, constitue un lieu favorable à une extension urbaine.Néanmoins une multitude de désordres apparaissent sur ces pentes façonnées dans les formations détritiques (sables, marnes et grés déposées à la fin du Tertiaire par la Mer Pannonique. Le levé d'une carte géomorphologique au 1/5000 a permis de mettre en évidence une multitude de mouvements de terrain. Plusieurs types de mouvements ont été observés : des mouvements rotationnels, des coulées boueuses et des extensions latérales appelées localement "glimées". Ces mouvements peuvent être expliqués par des facteurs favorables à leur déclenchement. On a recensé des facteurs qualifiés de "permanents" (topographie, géologie, hydrologie et des facteurs qualifiés "d'occasionnels" comme les précipitations.L'étude chronologique de ces formes a permis d'identifier quatre générations de mouvements de terrain. Des indices, comme des fissures affectant les murs des maisons et des clôtures, ou des arbres déformés, montrent que ces mouvements sont toujours actifs.A new residential district is under construction on the southern slope of Oradea Hills located in the eastern part of the town of Oradea and on right bank of the Cris Repede. The new houses are distributed according to two alignments: one on the top of the interfluve and the other, denser, at the bottom of the slope. Gardens and terrace cultivation can be found between these two developments. Therefore, this green slope in the vicinity of the urban center constitutes a

  7. Lettre ouverte au Président du Conseil du CERN

    CERN Document Server

    Association du personnel

    2010-01-01

    Genève, le 1er février 2010 Monsieur le Président, Les membres de la Caisse de pensions, actifs et pensionnés, sont à la fois très inquiets et indignés par la manière avec laquelle le Conseil traite la question, devenue alarmante, de l’équilibre de la Caisse. Dès 2004 en effet, l’étude actuarielle avait alerté le Conseil au sujet du déficit technique du régime et de l’insuffisance du financement de son plan de prestations. Le Conseil s’est alors contenté de mettre en place un mécanisme de sous indexation des pensions – arbitraire et discriminatoire dans la mesure où il ne fait appel qu’à la solidarité des pensionnés – et de décider une augmentation minime des contributions à la Caisse, une mesurette ...

  8. Formatt: Correcting protein multiple structural alignments by incorporating sequence alignment

    Directory of Open Access Journals (Sweden)

    Daniels Noah M

    2012-10-01

    Full Text Available Abstract Background The quality of multiple protein structure alignments are usually computed and assessed based on geometric functions of the coordinates of the backbone atoms from the protein chains. These purely geometric methods do not utilize directly protein sequence similarity, and in fact, determining the proper way to incorporate sequence similarity measures into the construction and assessment of protein multiple structure alignments has proved surprisingly difficult. Results We present Formatt, a multiple structure alignment based on the Matt purely geometric multiple structure alignment program, that also takes into account sequence similarity when constructing alignments. We show that Formatt outperforms Matt and other popular structure alignment programs on the popular HOMSTRAD benchmark. For the SABMark twilight zone benchmark set that captures more remote homology, Formatt and Matt outperform other programs; depending on choice of embedded sequence aligner, Formatt produces either better sequence and structural alignments with a smaller core size than Matt, or similarly sized alignments with better sequence similarity, for a small cost in average RMSD. Conclusions Considering sequence information as well as purely geometric information seems to improve quality of multiple structure alignments, though defining what constitutes the best alignment when sequence and structural measures would suggest different alignments remains a difficult open question.

  9. Ved du, hvad der er i dine varer, når du handler?

    DEFF Research Database (Denmark)

    Phillip, Anja; Smith, Viktor

    2016-01-01

    I supermarkedet på vej hjem køber du ind til madpakken. Ved kølemontren med pålæg ser du en pakke Gårdlykke Hønsesalat. ... Måske vælger du den uden at tænke nærmere over hvorfor, eller fordi emballagen og navnet får hønsesalaten til at fremstå lokal, hjemmelavet eller økologisk. ... Alt dette ba...... bakkes op af resultaterne fra årelang forskning på CBS, hvor universitetets forskergruppe Fair-Speak har undersøgt emballagernes måde at påvirke forbrugerne til at købe produktet....

  10. Investigation of AWG demultiplexer based SOI for CWDM application

    Directory of Open Access Journals (Sweden)

    Juhari Nurjuliana

    2017-01-01

    Full Text Available 9-channel Arrayed Waveguide Grating (AWG demultiplexer for conventional and tapered structure were simulated using beam propagation method (BPM with channel spacing of 20 nm. The AWG demultiplexer was design using high refractive index (n~3.47 material namely silicon-on-insulator (SOI with rib waveguide structure. The characteristics of insertion loss, adjacent crosstalk and output spectrum response at central wavelength of 1.55 μm for both designs were compared and analyzed. The conventional AWG produced a minimum insertion loss of 6.64 dB whereas the tapered AWG design reduced the insertion loss by 2.66 dB. The lowest adjacent crosstalk value of -16.96 dB was obtained in the conventional AWG design and this was much smaller compared to the tapered AWG design where the lowest crosstalk value is -17.23 dB. Hence, a tapered AWG design significantly reduces the insertion loss but has a slightly higher adjacent crosstalk compared to the conventional AWG design. On the other hand, the output spectrum responses that are obtained from both designs were close to the Coarse Wavelength Division Multiplexing (CWDM wavelength grid.

  11. Étude de la qualité des eaux usées des deux retenues du bassin du ...

    African Journals Online (AJOL)

    SARAH

    31 mai 2017 ... Gourou au carrefour de l'Indénié à Abidjan en 2012. 11138. Journal of Applied .... retenues sont nées du projet de gestion intégrée du bassin du Gourou (CI-FAD, ..... Contrôle de la qualité microbiologique des eaux usées ...

  12. MUON DETECTORS: ALIGNMENT

    CERN Multimedia

    G.Gomez

    2010-01-01

    The main developments in muon alignment since March 2010 have been the production, approval and deployment of alignment constants for the ICHEP data reprocessing. In the barrel, a new geometry, combining information from both hardware and track-based alignment systems, has been developed for the first time. The hardware alignment provides an initial DT geometry, which is then anchored as a rigid solid, using the link alignment system, to a reference frame common to the tracker. The “GlobalPositionRecords” for both the Tracker and Muon systems are being used for the first time, and the initial tracker-muon relative positioning, based on the link alignment, yields good results within the photogrammetry uncertainties of the Tracker and alignment ring positions. For the first time, the optical and track-based alignments show good agreement between them; the optical alignment being refined by the track-based alignment. The resulting geometry is the most complete to date, aligning all 250 DTs, ...

  13. fibrosarcome du larynx

    African Journals Online (AJOL)

    pie du lit tumoral est employée comme complément thé- rapeutique [9] alors que la chimiothérapie est générale- ment indiquée dans les formes métastatiques. Le pronos- tic dépend essentiellement du degré de différentiation his- tologique. En fait, le fibrosarcome bien différencié est caractérisé par la fréquence de récidive ...

  14. Les “démons crachés” de l'autre République de Serge Armand ...

    African Journals Online (AJOL)

    serait provenue que de l'au-delà du monde physique pour combattre le tyran. ..... Marc Moura qui estime que l'œuvre de Sony Labou Tansi présente “une étrangeté .... de soi qui, dans le texte et qui équivaut à l'égoïsme, est la plus large des ...

  15. Au fil du temps (1976 ou la loi du seuil

    Directory of Open Access Journals (Sweden)

    Isabelle Singer

    2010-04-01

    Full Text Available Ayant choisi de vivre dans un camion, les héros d’Au fil du temps (film de Wim Wenders de 1976 font du seuil une expérience particulière. Celle de la rupture avec toute idée de foyer et celle du refus d’appartenance à la terre natale, cette terre allemande traversée par une frontière le long de laquelle ils vont voyager, et qui les renvoie à chaque instant aux traumatismes de l’Histoire. Sur le pare-brise du camion, l’extérieur (campagnes indifférenciées, villes à l’abandon… et l’intérieur se superposent. Au fil du temps questionne le paysage : il s’agit d’en décoller un à un les mythes qui le recouvrent. L’image alors n’est plus surface mais volume à traverser, à lacérer et découvrir ce qui est tissé dans le paysage. La démarche de Wenders est alors proche de celle d’un de ses contemporains : Anselm Kiefer. Le paysage allemand provoque le rejet parce qu’il y a là toujours plus que le visible : des strates et des strates de culpabilité que le mythe - et c’est sa fonction - a recouvert. Et qu’il s’agira ici, de soulever. Le choix du nomadisme, c’est celui d’un état de l’humanité antérieur à l’idée de patrie. Et c’est aussi celui de la solitude, comme prix à payer à ce refus d’appartenance et à cette mise à jour des mythes. L’appartenance à la terre allemande et à son Histoire est profondément problématique parce que les pères sont fondamentalement coupables. On se reconnaîtra alors des pères de substitution : des pères de cinéma (Nicholas Ray ou Fritz Lang. Et l’on substituera l’Histoire du cinéma à l’Histoire. Bruno est réparateur ambulant de projecteurs et Au fil du temps dressera, au gré de ses pérégrinations, un état des lieux du cinéma allemand des années soixante-dix : déliquescent, colonisé par les images hollywoodiennes. Il faut que cela change : état du cinéma ; état des protagonistes solitaires en quête d’une identit

  16. L’apprentissage du bien-être animal chez de futures professionnels animaliers : des éthiques animals malmenées

    Directory of Open Access Journals (Sweden)

    Vidal Michel

    2015-01-01

    Full Text Available Les débats dont le bien-être animal est l’objet entre chercheurs, professionnels et associations en font une question socialement vive scientifico-éthique. Ils en interrogent l’éducabilité alors que cette notion est prise en compte dans les curricula de l’enseignement agricole. Envisageant son enseignement au travers d’une éducation à l’empathie interspécifique, nous questionnons les facteurs susceptibles de l’influencer. Nous nous fondons sur le discours de sept élèves en baccalauréat professionnel relevant de l’élevage d’animaux de production ou d’animaux de compagnie durant deux années de formation. Six élèves, quelle que soit leur filière de formation, souhaitent créer une relation affective sans nécessairement développer une attitude empathique durant la formation. Parmi les facteurs responsables, nous distinguons (1 un manque de confiance en soi de l’élève, (2 des motivations égocentrées primant sur des motivations zoocentrées, (3 la loyauté et les habitudes acquises à l’égard des pratiques parentales, (4 la conformation aux pratiques et idéologies dominantes du monde professionnel, (5 des facteurs associés aux situations d’enseignement (savoirs et pratiques de référence qui font autorité, valeurs de conformité primant sur des valeurs éthiques, dissociation de la dimension relationnelle et productive de l’élevage, jugements négatifs portés par l’enseignant et les élèves originaires du monde agricole. Ces facteurs généreraient des mécanismes de défense chez l’élève nuisibles au développement d’un raisonnement affectivo-éthique critique.

  17. Hausse du niveau des océans et perte de terres dans le delta du Nil ...

    International Development Research Centre (IDRC) Digital Library (Canada)

    9 juin 2016 ... Au moyen de systèmes d'information géographique (SIG), des chercheurs subventionnés par le CRDI ont déterminé les zones littorales du delta du Nil qui pourraient être touchées par la hausse du niveau des océans. Il pourrait en résulter d'importantes pertes de terres d'ici 2100. Selon les plus récentes ...

  18. Les mots du jazz

    OpenAIRE

    Roueff, Olivier

    2007-01-01

    L’ouvrage d’André Schaeffner constitue la première analyse savante du jazz (1926). Il a marqué une étape importante dans le processus de réinvention du jazz en France en contribuant notamment, par sa réception et les polémiques qu’il a suscitées, à transformer l’identification du jazz d’une musique « américaine » à une musique « noire-américaine » (c’est-à-dire aux « racines » africaines). Les analyses proposées dans cet ouvrage, alors qu’elles désignaient des musiques que la critique de jazz...

  19. 23 octobre 2012 - Le Président du Conseil général de la Haute-Savoie C. Monteil signe le livre d'or en présence du Directeur général R. Heuer, la chef des Relations Internationales F. Pauss, le chef du département Physique P. Bloch et le chef du département Technologie F. Bordry; visite du hall de test des aimants supraconducteurs du LHC avec F. Bordry.

    CERN Multimedia

    Maximilien Brice

    2012-01-01

    23 octobre 2012 - Le Président du Conseil général de la Haute-Savoie C. Monteil signe le livre d'or en présence du Directeur général R. Heuer, la chef des Relations Internationales F. Pauss, le chef du département Physique P. Bloch et le chef du département Technologie F. Bordry; visite du hall de test des aimants supraconducteurs du LHC avec F. Bordry.

  20. The effect of interface trapped charges in DMG-S-SOI MOSFET: a perspective study

    International Nuclear Information System (INIS)

    Mohapatra, S K; Pradhan, K P; Sahu, P K; Pati, G S; Kumar, M R

    2014-01-01

    In this paper, the existing two-dimensional (2D) threshold voltage model for a dual material gate fully depleted strained silicon on insulator (DMG-FD-S-SOI) metal-oxide-semiconductor field effect transistor (MOSFET) is modified by considering the interface trapped charge effects. The interface trapped charge is a common phenomenon, and this charge cannot be neglected in nanoscale devices. For finding out the surface potential, parabolic approximation has been utilized and the virtual cathode potential method is used to formulate the threshold voltage. The developed threshold voltage model incorporates both positive as well as negative interface charges. Finally, validity of the presented model is verified with 2D device simulator Sentaurus™. (paper)

  1. The effect of interface trapped charges in DMG-S-SOI MOSFET: a perspective study

    Science.gov (United States)

    Mohapatra, S. K.; Pradhan, K. P.; Sahu, P. K.; Pati, G. S.; Kumar, M. R.

    2014-12-01

    In this paper, the existing two-dimensional (2D) threshold voltage model for a dual material gate fully depleted strained silicon on insulator (DMG-FD-S-SOI) metal-oxide-semiconductor field effect transistor (MOSFET) is modified by considering the interface trapped charge effects. The interface trapped charge is a common phenomenon, and this charge cannot be neglected in nanoscale devices. For finding out the surface potential, parabolic approximation has been utilized and the virtual cathode potential method is used to formulate the threshold voltage. The developed threshold voltage model incorporates both positive as well as negative interface charges. Finally, validity of the presented model is verified with 2D device simulator Sentaurus™.

  2. Design and simulation of resistive SOI CMOS micro-heaters for high temperature gas sensors

    International Nuclear Information System (INIS)

    Iwaki, T; Covington, J A; Udrea, F; Ali, S Z; Guha, P K; Gardner, J W

    2005-01-01

    This paper describes the design of doped single crystal silicon (SCS) microhotplates for gas sensors. Resistive heaters are formed by an n+/p+ implantation into a Silicon-On-Insulator (SOI) wafer with a post-CMOS deep reactive ion etch to remove the silicon substrate. Hence they are fully compatible with CMOS technologies and allows for the integration of associated drive/detection circuitry. 2D electro-thermal models have been constructed and the results of numerical simulations using FEMLAB[reg] are given. Simulations show these micro-hotplates can operate at temperatures of 500 deg. C with a drive voltage of only 5 V and a power consumption of less than 100 mW

  3. Les outils du CERN

    CERN Multimedia

    1999-01-01

    C'est le plus grand centre mondial de recherche en physique des particules. Les outils du Laboratoire, accélérateurs et détecteurs de particules, figurent parmi les instruments scientifiques les plus complexes au monde. Des prix Nobels ont d'ailleurs été attribués aux physiciens du CERN pour leurs développements.

  4. Évaluation du nouveau programme d'études du College of Health ...

    International Development Research Centre (IDRC) Digital Library (Canada)

    Ces changements étaient jugés nécessaires pour préparer les professionnels de la santé aux nouvelles exigences de la prestation de services de santé décentralisés, pour juguler les nouvelles pandémies comme celles du VIH/sida et du virus Ébola, ainsi que pour répondre aux besoins des malades dans les zones ...

  5. L’écriture du temps dans Robinson Crusoe

    OpenAIRE

    Bulckaen, Denise

    2018-01-01

    “Le récit est une séquence deux fois temporelle... il y a le temps de la chose-racontée et le temps du récit (temps du signifié et temps du signifiant)”. Cette citation se trouve au début du chapitre que Genette consacre à “Ordre” dans Figures III. Elle s'applique à de nombreux romans, mais elle est particulièrement intéressante quand on considère le roman de forme autobiographique. Le décalage entre “le temps du signifié” et “le temps du signifiant” est plus ou moins grand selon les romans. ...

  6. Établissements recevant du public

    CERN Document Server

    2014-01-01

    Synthèse pour les installations électriques, des règles de sécurité contre les risques d’incendie et de panique dans les établissements recevant du public (ERP), selon l’arrêté du 25 juin 1980 modifié. L'ouvrage traite à la fois des dispositions communes aux établissements du 1er groupe (1ère à 4ème catégorie), du 2ème groupe (5ème catégorie) et des règles particulières applicables aux différents types d'établissements (structures d'accueil pour personnes âgées ou handicapées, hôtels, magasins de vente, restaurants et débit de boisson, établissements de soins, administration, châpiteaux, etc...) Sont ainsi notamment traités, dans le cadre des dispositions communes aux établissements du 1er groupe, pour les installations électriques normales : les installations des appareils, tableaux et canalisations, les locaux électriques et installation de machines, l'éclairage normal des locaux accessibles au public, le chauffage et la ventilation, l'installation d'eau chaude sanita...

  7. Issues and challenges of the development of petroleum products distribution sector in Algeria; Les enjeux et les defis du developpement du secteur de la distribution des produits petroliers en Algerie

    Energy Technology Data Exchange (ETDEWEB)

    Akretche, Said

    2010-09-15

    The petroleum products distribution sector in Algeria is experiencing profound changes. The economic growth has brought an increase and a diversification of petroleum products consumption. Reforms on the opening of the sector to competition and regulations have allowed progress, especially in the promotion of clean products. Naftal invested in a transformation and modernization process to adapt to the new context and align itself with the worldwide best practices. This plan expects important investments for the promotion of clean products and the development of a ducting transport network to limit the environmental damage. [French] Le secteur de la distribution des produits petroliers en Algerie connait des mutations profondes. La croissance economique a induit une augmentation et une diversification de la consommation des produits petroliers. Les reformes portant ouverture du secteur a la concurrence et regulation ont permis des avancees notamment dans la promotion des produits propres. Naftal a engage un processus de transformation et modernisation pour s'adapter au nouveau contexte et s'aligner sur les meilleures pratiques mondiales. Ce plan prevoit d'importants investissements pour la promotion des produits propres et la realisation d'un reseau de transport par canalisation pour limiter les atteintes environnementales.

  8. Food security among individuals experiencing homelessness and mental illness in the At Home/Chez Soi Trial.

    Science.gov (United States)

    O'Campo, Patricia; Hwang, Stephen W; Gozdzik, Agnes; Schuler, Andrée; Kaufman-Shriqui, Vered; Poremski, Daniel; Lazgare, Luis Ivan Palma; Distasio, Jino; Belbraouet, Slimane; Addorisio, Sindi

    2017-08-01

    Individuals experiencing homelessness are particularly vulnerable to food insecurity. The At Home/Chez Soi study provides a unique opportunity to first examine baseline levels of food security among homeless individuals with mental illness and second to evaluate the effect of a Housing First (HF) intervention on food security in this population. At Home/Chez Soi was a 2-year randomized controlled trial comparing the effectiveness of HF compared with usual care among homeless adults with mental illness, stratified by level of need for mental health services (high or moderate). Logistic regressions tested baseline associations between food security (US Food Security Survey Module), study site, sociodemographic variables, duration of homelessness, alcohol/substance use, physical health and service utilization. Negative binomial regression determined the impact of the HF intervention on achieving levels of high or marginal food security over an 18-month follow-up period (6 to 24 months). Community settings at five Canadian sites (Moncton, Montreal, Toronto, Winnipeg and Vancouver). Homeless adults with mental illness (n 2148). Approximately 41 % of our sample reported high or marginal food security at baseline, but this figure varied with gender, age, mental health issues and substance use problems. High need participants who received HF were more likely to achieve marginal or high food security than those receiving usual care, but only at the Toronto and Moncton sites. Our large multi-site study demonstrated low levels of food security among homeless experiencing mental illness. HF showed promise for improving food security among participants with high levels of need for mental health services, with notable site differences.

  9. Design of novel SOI 1 × 4 optical power splitter using seven horizontally slotted waveguides

    Science.gov (United States)

    Katz, Oded; Malka, Dror

    2017-07-01

    In this paper, we demonstrate a compact silicon on insulator (SOI) 1 × 4 optical power splitter using seven horizontal slotted waveguides. Aluminum nitride (AIN) surrounded by silicon (Si) was used to confine the optical field in the slot region. All of the power analysis has been done in transverse magnetic (TM) polarization mode and a compact optical power splitter as short as 14.5 μm was demonstrated. The splitter was designed by using full vectorial beam propagation method (FV-BPM) simulations. Numerical investigations show that this device can work across the whole C-band (1530-1565 nm) with excess loss better than 0.23 dB.

  10. OGM : vers une définition commune du contenu du problème ?

    Directory of Open Access Journals (Sweden)

    Icart Jean-Claude

    2001-07-01

    Full Text Available Les divergences croissantes depuis des années entre experts, responsables économiques, et acteurs sociaux et « citoyens » au sujet des OGM, ont pu être analysées à juste titre, comme exprimant la difficulté de dégager une « définition commune du contenu du problème »1.

  11. L’Association du personnel (AP) en réunion du Directorat élargi (ED) !

    CERN Multimedia

    Staff Association

    2017-01-01

    Le 3 avril dernier, la Vice-Présidente et le Président de l’Association du personnel ont présenté en réunion du Directorat élargi (Directeurs et Chefs de départements et d’unités) le plan des activités de l’Association du personnel pour 2017 et ont fait part des préoccupations de l’AP. Cinq sujets ont été abordés en commençant par la mise en œuvre des décisions prises dans le cadre de l’examen quinquennal de 2015. Examen quinquennal – suivi (voir Echo n° 257) 2016 – Principales mises en œuvre De nombreux changements ont déjà été mis en place en 2016 : Révision des Statut et Règlement du personnel en janvier 2016, pour les aspects de diversité, et en septembre 2016, pour la ...

  12. Les Cahiers du CREAD

    African Journals Online (AJOL)

    Admin

    6 juil. 2007 ... La problématique du développement du secteur de l'artisanat en. Algérie a été très peu abordée par les chercheurs, qu'ils soient universitaires ou .... La loi a institué une taxe d'apprentissage dont le taux a été fixé à. 1% de la ...

  13. Consolidation du leadership en recherche en écosanté en Asie du ...

    International Development Research Centre (IDRC) Digital Library (Canada)

    1 juin 2016 ... Financée par le CRDI, l'Initiative de renforcement du leadership en recherche en écosanté en Asie du Sud‑Est appuie l'exécution, dans la région, de travaux de recherche qui visent à permettre de mieux comprendre les effets de la transformation de l'agriculture sur les écosystèmes et sur la santé humaine ...

  14. Une dialectique de la pudeur : les pratiques de mise en visibilité de soi sur Facebook

    OpenAIRE

    Mell , Laurent

    2017-01-01

    L’amplification des usages des technologies de l’information et de la communication (TIC), et plus particulièrement des réseaux socionumériques, ont induit des évolutions significatives dans le rapport des individus aux normes relatives à la pudeur. Dans cet article, nous proposons de discuter des pratiques de mise en visibilité de soi sur le réseau socionumérique Facebook. Tout d’abord, nous montrons que l’augmentation de la considération pour la vie privée amène à une sélection des informat...

  15. Le Silurien du Synclinorium de Moncorvo (NE du Portugal): Biostratigraphie et Importance Paléogéographique

    Czech Academy of Sciences Publication Activity Database

    Sarmiento, G. N.; Picarra, J. M.; Rebelo, J. A.; Robardet, M.; Gutiérrez-Marco, J. C.; Štorch, Petr; Rábano, I.

    1999-01-01

    Roč. 32, č. 5 (1999), s. 749-767 ISSN 0016-6995 R&D Projects: GA AV ČR Projects 351 et 421 du Programme International de Corrélation Géologique et au Projet Iberian Variscides du programme Europrobe, Projet 061-B0 du Programme de Coopération Scientifique et Technique Franco-Portugais Subject RIV: DB - Geology ; Mineralogy Impact factor: 0.736, year: 1999

  16. Le Flaubert de Charles Du Bos

    Directory of Open Access Journals (Sweden)

    Jacques Neefs

    2009-01-01

    Full Text Available Charles Du Bos a porté une attention constante à l’œuvre de Flaubert (à l’exclusion de Bouvard et Pécuchet qui semble ne pas exister pour lui, à Madame Bovary et à L’Éducation sentimentale en particulier. La mise en relation de son étude : « Sur le milieu intérieur chez Flaubert », écrite en 1921, avec des textes du Journal de 1923 et de 1937, les rapprochements avec Gogol, Thomas Hardy, Tolstoï, Baudelaire, Henry James qui traversent les écrits de Du Bos, permettent de suivre ce que celui-ci décrit comme « l’expérience spirituelle » d’une matérialité comprise dans la conquête de la triple exigence du Beau, du Vivant et du Vrai. Du Bos décèle la force de l’œuvre de Flaubert dans la « disproportion » du style, et dans la puissance d’absorption qui fait la densité de cette prose, et qui désigne un extraordinaire travail de conversion. L’obscure expérience spirituelle ainsi poursuivie est celle d’un absolu de l’art, expérience paradoxale d’un « mystique qui ne croit à rien » (comme se désignait Flaubert lui-même, que le critique lie à une interrogation sur sa propre conversion.Charles Du Bos devoted an unflagging attention to Flaubert’s work (except for Bouvard et Pécuchet, which, apparently, according to him did not exist, to Madame Bovary and in particular L’Éducation sentimentale. The connection between his essay “Sur le milieu intérieur chez Flaubert”, written in 1921, and extracts from his Journal, from 1923 to 1937, the comparisons with Gogol, Thomas Hardy, Tolstoy, Baudelaire, and Henry James that run through the writings of Du Bos, allow us to follow what he terms “the spiritual experience” of a materiality encompassed in the conquest of the triple demand of the Beautiful, the Living, the Truth. Du Bos detects the power of Flaubert’s work in the “disproportion” of his style, and the power of absorption that forms the density of his prose, showing an

  17. Droit du dommage corporel systèmes d'indemnisation

    CERN Document Server

    Lambert-Faivre, Yvonne

    2015-01-01

    Le Droit du dommage corporel est aujourd'hui une spécialité reconnue, à la convergence du droit civil et du droit pénal, du droit de la consommation et du droit de l'environnement, du droit de la sécurité sociale et du droit des transports, etc. La sécurité et l'intégrité de la personne humaine sont des droits fondamentaux où l'exigence éthique et l'équité confortent la règle juridique pour tenter d'indemniser les victimes de dommages corporels avec efficacité et transparence. Dans tous ces domaines, cette 8e édition rend compte de l'actualité du droit du dommage corporel : jurisprudence détaillée sur la nomenclature des préjudices réparables, à l'heure où sa consécration par décret reste en suspens, évaluation médicale et monétaire des préjudices, actualité jurisprudentielle du recours des tiers payeurs (article 25 de la loi du 21 décembre 2006 et ses difficultés d'application), sécurité sociale, responsabilité médicale et indemnisations des victimes d'accidents médica...

  18. De Paris à Lyon. Les mutations éditoriales du «Lancelot du Lac»

    Directory of Open Access Journals (Sweden)

    Gaëlle Burg

    2015-07-01

    Full Text Available Lancelot du Lac est le premier roman arthurien imprimé à la Renais­sance. Dans sa première édition parue en 1488, qui réunit deux imprimeurs (Jean Le Bourgeois à Rouen et Jean Du Pré à Paris, un découpage et un prologue inédits sont ajoutés par le remanieur. Le texte sera réédité six fois par divers imprimeurs-libraires parisiens jusqu’en 1533. L’édition de luxe d’Antoine Vérard (1494, destinée au roi Charles VIII, présente d’importantes modifications effectuées dans un but commercial. Après une longue période d’accalmie qui signe le début du déclin de la vogue des romans de chevalerie médiévaux, Benoît Rigaud publie à Lyon, sous une forme considérablement abrégée, la dernière édition connue du Lancelot au XVIe siècle (1591. Si elle ne présente que peu d’intérêt littéraire, elle apporte cependant des informations concernant les pratiques éditoriales et les goûts du  lecteur de la fin du XVIe siècle. De Paris à Lyon, entre renaissance et déclin, le parcours éditorial d’un incontournable roman arthurien.Lancelot du Lac is the editio princeps of an Arthurian romance in Renaissance France. The first edition in 1488, which brings together two printers (Jean Le Bourgeois from Rouen and Jean Du Pré from Paris, offers original arrangement and prologue added by the compositor. The text will be published six times by various printers and booksellers in Paris until 1533. The luxurious edition from Antoine Vérard (1494 dedicated to King Charles VIII provides interesting transformations in commercial purposes. After a long time without edition, showing the beginning of chivalry literature’s decline, Benoît Rigaud publish in Lyon, in a greatly abbreviated form, the last known edition of Lancelot in the XVIth century (1591. If it presents no literary interest, it provides nevertheless informations about editorial practices and reader’s tastes from the end of Renaissance France. From Paris to

  19. Les premiers tours du monde à forfait. L’exemple de la Société des Voyages d’Etudes Autour du Monde (1878)

    OpenAIRE

    Gauthier, Lionel

    2012-01-01

    Dans la seconde moitié du XIXe siècle, avec le développement du bateau à vapeur et du chemin de fer, et l’ouverture de nouveaux axes de transport comme le Canal de Suez, le voyage autour du monde devient envisageable pour les touristes. Ainsi, dès 1872 des tours du monde à forfait sont organisés, ce qui témoigne de l’entrée du voyage autour du monde dans l’industrie touristique naissante. Cet article étudie ces premiers voyages d’un nouveau genre à travers l’exemple de la Société des Voyages ...

  20. Les dispositifs du Net art

    OpenAIRE

    Fourmentraux, Jean-Paul

    2010-01-01

    La pratique du Net art radicalise la question du potentiel communicationnel d’un média —Internet— qui constitue tout à la fois le support technique, l’outil créatif et le dispositif social de l’œuvre. Les technologies de l’information et de la communication (TIC) placent en effet l’œuvre d’art au cœur d’une négociation socialement distribuée entre l’artiste et le public. L’article est focalisé sur cette construction collective du Net art et sur ses mises en scènes. Il montre le travail artist...

  1. MUON DETECTORS: ALIGNMENT

    CERN Multimedia

    G.Gomez

    2010-01-01

    Most of the work in muon alignment since December 2009 has focused on the geometry reconstruction from the optical systems and improvements in the internal alignment of the DT chambers. The barrel optical alignment system has progressively evolved from reconstruction of single active planes to super-planes (December 09) to a new, full barrel reconstruction. Initial validation studies comparing this full barrel alignment at 0T with photogrammetry provide promising results. In addition, the method has been applied to CRAFT09 data, and the resulting alignment at 3.8T yields residuals from tracks (extrapolated from the tracker) which look smooth, suggesting a good internal barrel alignment with a small overall offset with respect to the tracker. This is a significant improvement, which should allow the optical system to provide a start-up alignment for 2010. The end-cap optical alignment has made considerable progress in the analysis of transfer line data. The next set of alignment constants for CSCs will there...

  2. Bassins versants du Loup, de la Cagne et du Malvan

    OpenAIRE

    Lepère, Cédric; Lautier, Laurence; Pellegrino, Emmanuel

    2013-01-01

    Identifiant de l'opération archéologique : 8453 Date de l'opération : 2007 (PC) ; 2007 (PI) Inventeur(s) : Lepère Cédric (AUT) ; Lautier Laurence (AUT) ; Pellegrino Emmanuel (AUT) Une campagne de prospection inventaire a été effectuée pendant trois mois, dans les bassins-versants de la Cagne, du Loup et du Malvan qui regroupent les communes de Cagnes-sur-Mer, Villeneuve-Loubet, La Colle-sur-Loup, Saint-Paul-de-Vence, Vence, Saint-Jeannet, Bezaudun, Tourrettes-sur-Loup, Roquefort-les-Pins, Le ...

  3. Visite du Conseil des gouverneurs du CRDI en Afrique de l'Est ...

    International Development Research Centre (IDRC) Digital Library (Canada)

    17 oct. 2017 ... La délégation dans la communauté La délégation à l'école féminine. La délégation avec les membres du Women's Group. Durant la visite, Jean Lebel et Molapo Qhobela, directeur général de la Fondation nationale de la recherche de l'Afrique du Sud, ont annoncé les projets retenus au Kenya et en ...

  4. La L.O.L.F. et les projets annuels de performance (P.A.P.) : Elaboration des figures du citoyen, de l'usager, du contribuable et du service public

    OpenAIRE

    Eyraud, Corine

    2006-01-01

    Nous nous intéresserons ici à la fois aux questions de la mesure des effets de l'action publique - ici l'action publique éducative universitaire -, aux dispositifs qui « construisent » les figures de l'usager (en tant que client ?), du citoyen, du contribuable et du service public, et aux nouvelles formes de démocratie que ces dispositifs génèrent (ou pas).

  5. COMMUNICATION DU CREDIT AGRICOLE - French version only

    CERN Multimedia

    2003-01-01

    La Direction du Crédit Agricole informe son aimable clientèle du CERN des jours et heures d'ouverture de l'agence du site de Prévessin à compter du mardi 14 janvier 2003 : 1. Horaires pour les opérations bancaires courantes 7 jours sur 7 et 24h/24 avec l'espace libre service bancaire. 2. Horaires conseil du mardi au vendredi - Mardi, de 9h. à 12h. et de 14h.15 à 16h.30. - Mercredi, jeudi et vendredi, de 9h. à 12h. et de 13h.30 à 16h.30. Deux collaboratrices au lieu d'une seront désormais présentes toute la journée du mardi au vendredi pour vous accueillir, vous informer et vous conseiller en crédits et placements (réception conseil sur rendez-vous). Autre nouveauté : les mêmes conseillers seront aussi à votre disposition le samedi, sur notre agence de Gex, de 8h.15 à 13h.05, notamment pour les études de financements habitat. La Direction et toute l'équipe de l'agence du Crédit Agricole vous souhaitent une excellent année 2003.

  6. Paul Celan in Translation: "Du sei wie du"

    Directory of Open Access Journals (Sweden)

    John Felstiner

    1983-09-01

    Full Text Available Translating the lyric poetry of Paul Celan, especially his later poems, carries not only the endemic challenge and difficulty of any verse translation, but the added incentive of doing justice to a writer whose whole recourse after the Holocaust—whose sanctuary, if he was to have any at all—he sought in language itself, specifically in the Muttersprache , the mother tongue that was as well the tongue of those who murdered his mother and father. This essay exposes a process of translating "Du sei wie du" (1970, which perhaps more than any other poem by Celan, at once solicits and defies translation, moving as it does from modern to medieval German, and closing with Hebrew words from Isaiah— a messianic imperative that shows Celan verging as ever on his Jewish identity.

  7. Gestion intégrée du mildiou du mil en station au centre régional de ...

    African Journals Online (AJOL)

    user

    Le mil (Pennicetum glaucum) L.R.Br constitue 75% de la production céréalière du Niger. Cependant, son rendement est très faible dû à plusieurs types de contraintes. La maladie du mildiou du mil causé par un champignon Sclerospora graminicola (Sacc) Schroët, occupe une place importante. L'objectif de cette étude.

  8. Festival du rire de Genève

    CERN Document Server

    Staff Association

    2015-01-01

    Connaissez-vous le Festival du rire de Genève ? La deuxième édition aura lieu du 25 au 28 mars 2015 au Casino-Théâtre à Carouge. Côté programmation, Marc Donnet-Monay ouvre les festivités avant trois autres soirées de folie et d’humour que nous vous laissons le soin de découvrir dans le programme : http://www.rire-geneve.ch/#programme. Réduction de 30% sur l’achat de places pour les membres du personnel du CERN. Pour cela, il suffit de se rendre sur la billetterie en ligne de notre site : www.rire-geneve.ch et d’utiliser le code promotionnel. Contacter le secrétariat de l’Association du personnel (Staff.Association@cern.ch) pour connaitre ce code promotionnel.

  9. Use of potassium-42 in the study of kidney functioning; Emploi du patassium-12 pour l'etude du fonctionnement renal

    Energy Technology Data Exchange (ETDEWEB)

    Morel, F; Guinnebault, M [Commissariat a l' Energie Atomique, Saclay (France).Centre d' Etudes Nucleaires

    1959-07-01

    Following an intravenous injection of potassium-42 as indicator, an analysis of the specific activity vs. time curve in arterial plasma, in venous plasma efferent from the kidney, in urine and in various regions of the kidney of rabbits reveals that: 1) The turnover rate of potassium in the cortex cells (proximal and distal convoluted tubes) is very large, being limited only by renal blood flow. 2) The turnover rate of potassium in deep regions (Henle loops and collector tubules) is much smaller. 3) Potassium in the urine comes from cells of the convoluted tubes and not from cells of Henle loops, collector ducts, or glomerular filtrate. 4) Any potassium filtered at the level of the glomerules would be entirely reabsorbed at the level of the proximal tube, while total potassium in the urine results from a process of excretion by cells of the distal tube. These results are comparable with the assumption that the movement of potassium between interstitial medium and convoluted tube cells results from entirely passive processes. (author) [French] Apres injection intraveineuse au lapin de radiopotassium comme indicateur, l'analyse des courbes de la radioactivite specifique du potassium, mesuree en fonction du temps dans le plasma arteriel, dans le plasma veineux efferent du rein, dans l'urine et dans diverses regions du rein, lui-meme, permet de montrer: 1)que la vitesse de renouvellement du potassium contenu dans les cellules du cortex (tubes contournes proximaux et distaux), apparait tres grande et semble limitee par le debit sanguin renal. 2) que le vitesse de renouvellement du potassium contenu dans les regions profondes (anses de Henle et tubes collecteurs) est beaucoup plus faible. 3) que le potassium de l'urine a pour precurseur le potassium des cellules des tubes contournes et non celui des cellules des anses de Henle ou des canaux collecteurs, ni celui du filtrat glomerulaire. 4) que le potassium filtre au niveau des glomerules serait entierement reabsorbe au

  10. Heterojunction fully depleted SOI-TFET with oxide/source overlap

    Science.gov (United States)

    Chander, Sweta; Bhowmick, B.; Baishya, S.

    2015-10-01

    In this work, a hetero-junction fully depleted (FD) Silicon-on-Insulator (SOI) Tunnel Field Effect Transistor (TFET) nanostructure with oxide overlap on the Germanium-source region is proposed. Investigations using Synopsys Technology Computer Aided Design (TCAD) simulation tools reveal that the simple oxide overlap on the Germanium-source region increases the tunneling area as well as the tunneling current without degrading the band-to-band tunneling (BTBT) and improves the device performance. More importantly, the improvement is independent of gate overlap. Simulation study shows improvement in ON current, subthreshold swing (SS), OFF current, ION/IOFF ration, threshold voltage and transconductance. The proposed device with hafnium oxide (HfO2)/Aluminium Nitride (AlN) stack dielectric material offers an average subthreshold swing of 22 mV/decade and high ION/IOFF ratio (∼1010) at VDS = 0.4 V. Compared to conventional TFET, the Miller capacitance of the device shows the enhanced performance. The impact of the drain voltage variation on different parameters such as threshold voltage, subthreshold swing, transconductance, and ION/IOFF ration are also found to be satisfactory. From fabrication point of view also it is easy to utilize the existing CMOS process flows to fabricate the proposed device.

  11. Bulletin du CRDI #127

    International Development Research Centre (IDRC) Digital Library (Canada)

    La mise à l'échelle de la recherche et de l'innovation en vue de créer un impact social constitue une priorité pour la communauté du développement. Toutefois ... Nous avons renouvelé notre soutien à la recherche auprès du gouvernement de l'Inde ... Des femmes étudient à l'École supérieure d'infotronique d'Haïti.

  12. Performances comparées du HDL-cholestérol et du ratio cholestérol ...

    African Journals Online (AJOL)

    Pour le dépistage du SMet, l'AUC du CT/HDL-C est de 0,69 (IC 95% 0,61-0,77) chez les ... high blood pressure (BP), high fasting glucose, low HDL-C and high triglycerides. Areas under the "Receiver operator characteristic" curves (AUC)

  13. Sensing Characteristics of A Precision Aligner Using Moire Gratings for Precision Alignment System

    Institute of Scientific and Technical Information of China (English)

    ZHOU Lizhong; Hideo Furuhashi; Yoshiyuki Uchida

    2001-01-01

    Sensing characteristics of a precision aligner using moire gratings for precision alignment sysem has been investigated. A differential moire alignment system and a modified alignment system were used. The influence of the setting accuracy of the gap length and inclination of gratings on the alignment accuracy has been studied experimentally and theoretically. Setting accuracy of the gap length less than 2.5μm is required in modified moire alignment. There is no influence of the gap length on the alignment accuracy in the differential alignment system. The inclination affects alignment accuracies in both differential and modified moire alignment systems.

  14. MUON DETECTORS: ALIGNMENT

    CERN Multimedia

    Z. Szillasi and G. Gomez.

    2013-01-01

    When CMS is opened up, major components of the Link and Barrel Alignment systems will be removed. This operation, besides allowing for maintenance of the detector underneath, is needed for making interventions that will reinforce the alignment measurements and make the operation of the alignment system more reliable. For that purpose and also for their general maintenance and recalibration, the alignment components will be transferred to the Alignment Lab situated in the ISR area. For the track-based alignment, attention is focused on the determination of systematic uncertainties, which have become dominant, since now there is a large statistics of muon tracks. This will allow for an improved Monte Carlo misalignment scenario and updated alignment position errors, crucial for high-momentum muon analysis such as Z′ searches.

  15. Triangular Alignment (TAME). A Tensor-based Approach for Higher-order Network Alignment

    Energy Technology Data Exchange (ETDEWEB)

    Mohammadi, Shahin [Purdue Univ., West Lafayette, IN (United States); Gleich, David F. [Purdue Univ., West Lafayette, IN (United States); Kolda, Tamara G. [Sandia National Laboratories (SNL-CA), Livermore, CA (United States); Grama, Ananth [Purdue Univ., West Lafayette, IN (United States)

    2015-11-01

    Network alignment is an important tool with extensive applications in comparative interactomics. Traditional approaches aim to simultaneously maximize the number of conserved edges and the underlying similarity of aligned entities. We propose a novel formulation of the network alignment problem that extends topological similarity to higher-order structures and provide a new objective function that maximizes the number of aligned substructures. This objective function corresponds to an integer programming problem, which is NP-hard. Consequently, we approximate this objective function as a surrogate function whose maximization results in a tensor eigenvalue problem. Based on this formulation, we present an algorithm called Triangular AlignMEnt (TAME), which attempts to maximize the number of aligned triangles across networks. We focus on alignment of triangles because of their enrichment in complex networks; however, our formulation and resulting algorithms can be applied to general motifs. Using a case study on the NAPABench dataset, we show that TAME is capable of producing alignments with up to 99% accuracy in terms of aligned nodes. We further evaluate our method by aligning yeast and human interactomes. Our results indicate that TAME outperforms the state-of-art alignment methods both in terms of biological and topological quality of the alignments.

  16. La reconstruction du sourcil par greffon composite du cuir chevelu: une astuce pour faciliter la technique

    Science.gov (United States)

    El Omari, Mounia; El Mazouz, Samir; Gharib, Noureddine; EL Abbassi, Abdallah

    2015-01-01

    Les sourcils jouent un rôle important dans l’équilibre esthétique du visage. Leur reconstruction ou ophriopoïése, après séquelle de brûlure fait partie intégrante du programme de réhabilitation de la face brûlée. Plusieurs techniques ont été décrites. Nous insistons ici sur l'intérêt d'une technique simple, à la portée de tous les chirurgiens, et dont la méthode et les résultats peuvent être améliorés par un dessin bien planifié des zones donneuse et receveuse: la greffe composite prélevée au niveau du cuir chevelu dessinée à l'aide d'un calque du sourcil controlatéral. PMID:26401195

  17. New insights on SOI Tunnel FETs with low-temperature process flow for CoolCube™ integration

    Science.gov (United States)

    Diaz Llorente, C.; Le Royer, C.; Batude, P.; Fenouillet-Beranger, C.; Martinie, S.; Lu, C.-M. V.; Allain, F.; Colinge, J.-P.; Cristoloveanu, S.; Ghibaudo, G.; Vinet, M.

    2018-06-01

    This paper reports the fabrication and electrical characterization of planar SOI Tunnel FETs (TFETs) made using a Low-Temperature (LT) process designed for 3D sequential integration. These proof-of-concept TFETs feature junctions obtained by Solid Phase Epitaxy Regrowth (SPER). Their electrical behavior is analyzed and compared to reference samples (regular process using High-Temperature junction formation, HT). Dual ID-VDS measurements verify that the TFET structures present Band-to-Band tunnelling (BTBT) carrier injection and not Schottky Barrier tunnelling. P-mode operating LT TFETs deliver an ON state current similar to that of the HT reference, opening the door towards optimized devices operating with very low threshold voltage VTH and low supply voltage VDD.

  18. La disparition du temps en gravitation quantique

    OpenAIRE

    Saint-Ours, Alexis de

    2012-01-01

    Le but de ce travail est d’examiner l’incidence philosophique de la gravitation quantique sur le concept de temps. Je cherche à montrer qu’elle conduit à une disparition du temps comme dimension et ouvre la voie à une compréhension du temps comme variation et même à l’idée de variation pure. En l’absence de temps mécanique, il est cependant possible de définir un temps d’origine thermodynamique. Je montre en quoi cette dissociation du temps mécanique et du temps thermodynamique, fait écho à l...

  19. Monnaie du commun et revenu social garanti

    OpenAIRE

    Baronian, Laurent; Vercellone, Carlo

    2015-01-01

    Le but de cet article est de poser les bases d’une approche de la monnaie du commun à partir d’une interrogation évincée par la théorie économique des biens communs. Notre analyse de la relation entre monnaie et théorie du commun s’articulera en trois parties. Dans la première, il s’agit d’établir une conception dynamique du commun au singulier dans laquelle la question de la monnaie et des mutations de la division du travail occupe une place centrale. Cette démarche fondée sur la triade trav...

  20. MUON DETECTORS: ALIGNMENT

    CERN Multimedia

    G. Gomez and J. Pivarski

    2011-01-01

    Alignment efforts in the first few months of 2011 have shifted away from providing alignment constants (now a well established procedure) and focussed on some critical remaining issues. The single most important task left was to understand the systematic differences observed between the track-based (TB) and hardware-based (HW) barrel alignments: a systematic difference in r-φ and in z, which grew as a function of z, and which amounted to ~4-5 mm differences going from one end of the barrel to the other. This difference is now understood to be caused by the tracker alignment. The systematic differences disappear when the track-based barrel alignment is performed using the new “twist-free” tracker alignment. This removes the largest remaining source of systematic uncertainty. Since the barrel alignment is based on hardware, it does not suffer from the tracker twist. However, untwisting the tracker causes endcap disks (which are aligned ...

  1. MUON DETECTORS: ALIGNMENT

    CERN Multimedia

    Gervasio Gomez

    The main progress of the muon alignment group since March has been in the refinement of both the track-based alignment for the DTs and the hardware-based alignment for the CSCs. For DT track-based alignment, there has been significant improvement in the internal alignment of the superlayers inside the DTs. In particular, the distance between superlayers is now corrected, eliminating the residual dependence on track impact angles, and good agreement is found between survey and track-based corrections. The new internal geometry has been approved to be included in the forthcoming reprocessing of CRAFT samples. The alignment of DTs with respect to the tracker using global tracks has also improved significantly, since the algorithms use the latest B-field mapping, better run selection criteria, optimized momentum cuts, and an alignment is now obtained for all six degrees of freedom (three spatial coordinates and three rotations) of the aligned DTs. This work is ongoing and at a stage where we are trying to unders...

  2. Une mesure différente du bien-être : l'indice du bonheur national ...

    International Development Research Centre (IDRC) Digital Library (Canada)

    À la lumière de ces données, le Centre for Bhutan Studies publiera, en 2011, un indice du BNB quantitatif. Cette subvention permettra à l'OPHI d'assister le Centre dans la synthèse et l'analyse des résultats de l'enquête de 2010. L'objectif : assurer la validité et la reconnaissance internationale de l'indice du BNB de sorte ...

  3. Evolution du pH et de la température au cours de la transformation artisanale du cymbium (voluté). Essai sur les perspectives de valorisation du produit transformé

    OpenAIRE

    Diouf, A.

    2008-01-01

    L’étude porte sur l’évolution du pH et de la température au cours de la transformation artisanale du Cymbium, ainsi que sur les perspectives de valorisation du produit transformé. Les expérimentations menées au site de transformation artisanale de Joal ont permis de constater que : Après 12 heures de séjour en bac (1ère nuit), le Cymbium est encore en phase de rigor mortis. Le pH moyen affiché à l’issue de cette première nuit est de 7,6 ; donc proche de celui du mollusque ...

  4. Nouvelles du Centre Aéré de l’Association du Personnel du CERN

    CERN Multimedia

    Jardin d'enfants

    2015-01-01

    Cet été 2015, durant quatre semaines d’été, le Centre Aéré a accueilli plus de 40 enfants âgés de 4 à 6 ans. Devant le succès rencontré, et à la demande des parents, il a été décidé d’en doubler la capacité maximale. A l'été 2016, du 4 au 29 juillet, la structure pourra accueillir les enfants de 4 ans révolus et de moins de 7 ans (nés après le 31/07/2009 mais avant  01/07/2012). Les inscriptions se feront à la semaine durant le mois d'Avril 2016. Les programmes sont en cours d'élaboration cependant nous pouvons déjà vous communiquer le thème conducteur du centre qui sera : à la découverte d'un continent différent chaque ...

  5. Accroissement de la compétitivité du Kenya dans l'économie du ...

    International Development Research Centre (IDRC) Digital Library (Canada)

    La promulgation par le Kenya du Science, Technology and Innovation Bill, 2012 confirme l'intérêt et la volonté du gouvernement de mettre en oeuvre désormais un programme de développement fondé sur la science. La loi offre aussi au CRDI l'occasion d'appuyer le programme de recherche et de politiques de la nouvelle ...

  6. L'aventure du grand collisionneur LHC du big bang au boson de Higgs

    CERN Document Server

    Denegri, Daniel; Hoecker, Andreas; Roos, Lydia; Rubbia, Carlo

    2014-01-01

    Qu'est-ce que la physique des particules élémentaires, le LHC, et le boson de Higgs ? Ce livre présente de manière simple le monde des quarks, des leptons et de leurs interactions, gouvernées par des symétries fondamentales de la nature, ainsi que le lien entre ce monde de l'infiniment petit et celui de l'infiniment grand. Cette conjonction entre la physique des particules élémentaires et l'évolution de la matière dans les premiers instants de l Univers qui ont suivi le Big-Bang est un des plus beaux acquis de la science de ces cinquante dernières années. Après une description du cadre théorique, le modèle standard, et de son élaboration durant la deuxième moitié du XXe siècle, l'accent est mis sur ses grands succès expérimentaux, mais aussi sur ses faiblesses ou insuffisances telles que nous les percevons aujourd'hui. La passionnante histoire du grand collisionneur de hadrons du CERN, le LHC, le plus grand projet purement scientifique jamais réalisé, est présentée à la fois sous ses...

  7. Une brève histoire du temps du Big Bang aux trous noirs

    CERN Document Server

    Hawking, Stephen

    2017-01-01

    Stephen Hawking est universellement reconnu comme l'un des plus grands cosmologistes de notre époque et l'un des plus brillants physiciens depuis Einstein. Successeur de Newton, il occupe à l'université de Cambridge la chaire de Mathématiques, et s'est rendu célèbre pour ses travaux sur les origines de l'Univers. Une brève histoire du temps est le premier livre qu'il ait décidé d'écrire pour le non-spécialiste. Il y expose, dans un langage simple et accessible, les plus récents développements de l'astrophysique concernant la nature du temps et du monde. Retraçant les grandes théories du cosmos, de Galilée et Newton à Einstein et Poincaré, racontant les ultimes découvertes de l'espace, expliquant la nature des trous noirs, il propose ensuite de relever le plus grand défi de la science moderne : la recherche d'une théorie unitaire combinant et unifiant la relativité générale et la mécanique quantique. On sait que Stephen Hawking lutte depuis plus de trente ans contre une maladie neurolo...

  8. Modeling and analysis of surface potential of single gate fully depleted SOI MOSFET using 2D-Poisson's equation

    Science.gov (United States)

    Mani, Prashant; Tyagi, Chandra Shekhar; Srivastav, Nishant

    2016-03-01

    In this paper the analytical solution of the 2D Poisson's equation for single gate Fully Depleted SOI (FDSOI) MOSFET's is derived by using a Green's function solution technique. The surface potential is calculated and the threshold voltage of the device is minimized for the low power consumption. Due to minimization of threshold voltage the short channel effect of device is suppressed and after observation we obtain the device is kink free. The structure and characteristics of SingleGate FDSOI MOSFET were matched by using MathCAD and silvaco respectively.

  9. A linear 180 nm SOI CMOS antenna switch module using integrated passive device filters for cellular applications

    Science.gov (United States)

    Jie, Cui; Lei, Chen; Peng, Zhao; Xu, Niu; Yi, Liu

    2014-06-01

    A broadband monolithic linear single pole, eight throw (SP8T) switch has been fabricated in 180 nm thin film silicon-on-insulator (SOI) CMOS technology with a quad-band GSM harmonic filter in integrated passive devices (IPD) technology, which is developed for cellular applications. The antenna switch module (ASM) features 1.2 dB insertion loss with filter on 2G bands and 0.4 dB insertion loss in 3G bands, less than -45 dB isolation and maximum -103 dB intermodulation distortion for mobile front ends by applying distributed architecture and adaptive supply voltage generator.

  10. Observation de terrain et télédétection (Baie du Roi, Spitsberg nord-occidental

    Directory of Open Access Journals (Sweden)

    Dominique Laffly

    1999-06-01

    Full Text Available Les observations de terrain sont fondamentales en télédétection. Selon la finalité de l’étude, la description des paysages observés sera plus ou moins détaillée. Une simple reconnaissance des principaux postes d’occupation du sol demande peu d’indicateurs et ne nécessite pas une localisation à la tachèle près. En revanche, l’analyse du contenu des pixels en vue d’une modélisation statistique s’appuie sur une description thématique détaillée de points localisés très précisément. Dans ce cas les images utilisées doivent être correctement géoréférencées et la localisation sur le terrain se fait à l’aide d’un GPS différentiel. Restent les problèmes du choix des points à analyser ainsi que celui de l’observation elle-même de leur "contenu". Nous présentons dans cet article une méthode qui vise à répondre à ces deux questions. Notre approche est fondée sur la technique du sondage systématique non-aligné. Cette dernière permet de tenir compte à la fois de la valeur des points observés et de leur localisation pour définir le plan d’échantillonnage. Les exemples présentés sont issus d’une étude réalisée sur les sandurs de la presqu’île de Br¯gger au Spitsberg nord-occidental (images SPOT XSP.

  11. MUON DETECTORS: ALIGNMENT

    CERN Multimedia

    G. Gomez

    Since December, the muon alignment community has focused on analyzing the data recorded so far in order to produce new DT and CSC Alignment Records for the second reprocessing of CRAFT data. Two independent algorithms were developed which align the DT chambers using global tracks, thus providing, for the first time, a relative alignment of the barrel with respect to the tracker. These results are an important ingredient for the second CRAFT reprocessing and allow, for example, a more detailed study of any possible mis-modelling of the magnetic field in the muon spectrometer. Both algorithms are constructed in such a way that the resulting alignment constants are not affected, to first order, by any such mis-modelling. The CSC chambers have not yet been included in this global track-based alignment due to a lack of statistics, since only a few cosmics go through the tracker and the CSCs. A strategy exists to align the CSCs using the barrel as a reference until collision tracks become available. Aligning the ...

  12. MUON DETECTORS: ALIGNMENT

    CERN Multimedia

    G.Gomez

    2011-01-01

    The Muon Alignment work now focuses on producing a new track-based alignment with higher track statistics, making systematic studies between the results of the hardware and track-based alignment methods and aligning the barrel using standalone muon tracks. Currently, the muon track reconstruction software uses a hardware-based alignment in the barrel (DT) and a track-based alignment in the endcaps (CSC). An important task is to assess the muon momentum resolution that can be achieved using the current muon alignment, especially for highly energetic muons. For this purpose, cosmic ray muons are used, since the rate of high-energy muons from collisions is very low and the event statistics are still limited. Cosmics have the advantage of higher statistics in the pT region above 100 GeV/c, but they have the disadvantage of having a mostly vertical topology, resulting in a very few global endcap muons. Only the barrel alignment has therefore been tested so far. Cosmic muons traversing CMS from top to bottom are s...

  13. Use of potassium-42 in the study of kidney functioning; Emploi du patassium-12 pour l'etude du fonctionnement renal

    Energy Technology Data Exchange (ETDEWEB)

    Morel, F.; Guinnebault, M. [Commissariat a l' Energie Atomique, Saclay (France).Centre d' Etudes Nucleaires

    1959-07-01

    Following an intravenous injection of potassium-42 as indicator, an analysis of the specific activity vs. time curve in arterial plasma, in venous plasma efferent from the kidney, in urine and in various regions of the kidney of rabbits reveals that: 1) The turnover rate of potassium in the cortex cells (proximal and distal convoluted tubes) is very large, being limited only by renal blood flow. 2) The turnover rate of potassium in deep regions (Henle loops and collector tubules) is much smaller. 3) Potassium in the urine comes from cells of the convoluted tubes and not from cells of Henle loops, collector ducts, or glomerular filtrate. 4) Any potassium filtered at the level of the glomerules would be entirely reabsorbed at the level of the proximal tube, while total potassium in the urine results from a process of excretion by cells of the distal tube. These results are comparable with the assumption that the movement of potassium between interstitial medium and convoluted tube cells results from entirely passive processes. (author) [French] Apres injection intraveineuse au lapin de radiopotassium comme indicateur, l'analyse des courbes de la radioactivite specifique du potassium, mesuree en fonction du temps dans le plasma arteriel, dans le plasma veineux efferent du rein, dans l'urine et dans diverses regions du rein, lui-meme, permet de montrer: 1)que la vitesse de renouvellement du potassium contenu dans les cellules du cortex (tubes contournes proximaux et distaux), apparait tres grande et semble limitee par le debit sanguin renal. 2) que le vitesse de renouvellement du potassium contenu dans les regions profondes (anses de Henle et tubes collecteurs) est beaucoup plus faible. 3) que le potassium de l'urine a pour precurseur le potassium des cellules des tubes contournes et non celui des cellules des anses de Henle ou des canaux collecteurs, ni celui du filtrat glomerulaire. 4) que le potassium filtre au niveau des glomerules serait entierement

  14. Violence et dire, pour une rhétorique du soin

    Directory of Open Access Journals (Sweden)

    André Quaderi

    Full Text Available Par une approche plurielle (psychopathologie du travail, sciences du langage et psychanalyse et au travers d’une clinique de type groupe de parole en institution gériatrique, il est abordé les phénomènes de violences. Les effets du dire, au niveau du clinicien, induisent des changements de comportements des soignants dont les causes sont abordées. Ainsi, la taylorisation de l’organisation inhibe la relation du soignant à l’autre et fige le travail dans une exécution de tâche. Ces effets délétères sont à rapporter au Thanatos tout comme les effets du dire (interprété comme une rhétorique du soin sont à comprendre du côté de l’Eros.

  15. Mise à jour sur le nouveau vaccin 9-valent pour la prévention du virus du papillome humain

    Science.gov (United States)

    Yang, David Yi; Bracken, Keyna

    2016-01-01

    Résumé Objectif Informer les médecins de famille quant à l’efficacité, à l’innocuité, aux effets sur la santé publique et à la rentabilité du vaccin 9-valent contre le virus du papillome humain (VPH). Qualité des données Des articles pertinents publiés dans PubMed jusqu’en mai 2015 ont été examinés et analysés. La plupart des données citées sont de niveau I (essais randomisés et contrôlés et méta-analyses) ou de niveau II (études transversales, cas-témoins et épidémiologiques). Des rapports et recommandations du gouvernement sont aussi cités en référence. Message principal Le vaccin 9-valent contre le VPH, qui offre une protection contre les types 6, 11, 16, 18, 31, 33, 45, 52 et 58 du VPH, est sûr et efficace et réduira encore plus l’incidence des infections à VPH, de même que les cas de cancer lié au VPH. Il peut également protéger indirectement les personnes non immunisées par l’entremise du phénomène d’immunité collective. Un programme d’immunisation efficace peut prévenir la plupart des cancers du col de l’utérus. Les analyses montrent que la rentabilité du vaccin 9-valent chez les femmes est comparable à celle du vaccin quadrivalent original contre le VPH (qui protège contre les types 6, 11, 16 et 18 du VPH) en usage à l’heure actuelle. Toutefois, il faut investiguer plus en profondeur l’utilité d’immuniser les garçons avec le vaccin 9-valent contre le VPH. Conclusion en plus d’être sûr, le vaccin 9-valent protège mieux contre le VPH que le vaccin quadrivalent. Une analyse coûtefficacité en favorise l’emploi, du moins chez les adolescentes. Ainsi, les médecins devraient recommander le vaccin 9-valent à leurs patients plutôt que le vaccin quadrivalent contre le VPH.

  16. Culture du bambou : diversification des moyens de subsistance des ...

    International Development Research Centre (IDRC) Digital Library (Canada)

    Culture du bambou : diversification des moyens de subsistance des petits producteurs de tabac du sud de la province de Nyanza, au Kenya - phase II. Au cours de la première phase du projet (projet no 103765), les chercheurs ont effectué une analyse de marché pour le bambou et les produits du bambou, comparé les ...

  17. Archives: les cahiers du cread

    African Journals Online (AJOL)

    Items 1 - 24 of 24 ... Archives: les cahiers du cread. Journal Home > Archives: les cahiers du cread. Log in or Register to get access to full text downloads. Username, Password, Remember me, or Register · Journal Home · ABOUT THIS JOURNAL · Advanced Search · Current Issue · Archives. 1 - 24 of 24 Items. 2016 ...

  18. Connaissances des médecins généralistes de Mohammedia (Maroc) concernant le dépistage du cancer du sein

    Science.gov (United States)

    Zine, Karima; Nani, Samira; Lahmadi, Imad Ait; Maaroufi, Abderrahmane

    2016-01-01

    Introduction Le cancer du sein représente un problème de santé publique majeur au Maroc. C'est le premier cancer chez la femme. L'objectif de ce travail était d'évaluer les connaissances des médecins généralistes (MG) en matière de dépistage du cancer du sein dans la préfecture de Mohammedia Maroc. Méthodes Nous avons mené une étude transversale, descriptive, exhaustive incluant les 97 MG exerçant dans les établissements de soins de santé de base du secteur public et privé de la province de Mohammedia. Résultats Le taux de participation était de 87%. L'âge moyen des MG était de 49,6 ± 8,1. Quatre-vingt pour cent (n=55) des MG ont donné une incidence incorrecte, 77,6% (n=85) ont reconnu l'existence d'un plan national de prévention et de contrôle du cancer (PNPCC) au Maroc, et 67,1 des MG ont rapporté l'existence d'un registre du cancer au Maroc. Le secteur d'activité était associé significativement avec les connaissances des MG sur le PNPCC et sur l'existence d'un guide de détection précoce du cancer du sein avec respectivement (p=0,003 et p=0,001). Une association significative entre l'ancienneté et l'existence d'un guide de détection précoce du cancer du sein et d'un registre du cancer du sein a été retrouvée avec (respectivement p=0,005 et p=0.002). Conclusion À la lumière de ces résultats il faudra renforcer les connaissances et les pratiques des MG par la promotion de la formation initiale et continue sur le dépistage. PMID:27800098

  19. Depleted uranium (DU) mobility in the natural environment

    International Nuclear Information System (INIS)

    Ragnarsdottir, K.V.

    2002-01-01

    In 1999 the Balkan's conflict lead NATO war planes to leave 10x10 3 kg of depleted uranium (DU) in the environment of Kosovo and neighbouring states (UNEP, 2001). DU behaves in the same manner in the environment as natural uranium and it can be traced with isotopic analysis due to the fact that DU has the isotopic composition of 0.2% 235 U and 99.8% 2 38 U as opposed to natural uranium which has 0.7% 2 35 U and 99.3% 2 38 U. DU is a waste product of the nuclear industry which enrich nuclear fuel by 2 35 U. Large stock piles of DU therefore exist in countries that produce nuclear energy and/or nuclear weapons. The DU is given to the weapons industry for free (or cheap) and has been a popular choice for armour penetrating arsenal due to the high density of uranium (19 g cm -3 ) and therefore its high penetrating power. Indeed the arsenal used in Kosovo consisted of DU penetrators that were shot from A-10 aeroplanes. They weigh roughly 300 g and have the shape of a fat 9 cm long pencil. (author)

  20. L'avenir du Moyen-Orient et de l'Afrique du Nord passe par la ...

    International Development Research Centre (IDRC) Digital Library (Canada)

    10 janv. 2013 ... Centre de recherches pour le développement international Gouvernement du Canada ... du Nord passe par la croissance partagée et l'économie de marché ... vivant en région éloignée aient un accès égal aux possibilités économiques. ... visant à trouver de nouveaux modes d'action pouvant contribuer au ...

  1. Alignment-Annotator web server: rendering and annotating sequence alignments.

    Science.gov (United States)

    Gille, Christoph; Fähling, Michael; Weyand, Birgit; Wieland, Thomas; Gille, Andreas

    2014-07-01

    Alignment-Annotator is a novel web service designed to generate interactive views of annotated nucleotide and amino acid sequence alignments (i) de novo and (ii) embedded in other software. All computations are performed at server side. Interactivity is implemented in HTML5, a language native to web browsers. The alignment is initially displayed using default settings and can be modified with the graphical user interfaces. For example, individual sequences can be reordered or deleted using drag and drop, amino acid color code schemes can be applied and annotations can be added. Annotations can be made manually or imported (BioDAS servers, the UniProt, the Catalytic Site Atlas and the PDB). Some edits take immediate effect while others require server interaction and may take a few seconds to execute. The final alignment document can be downloaded as a zip-archive containing the HTML files. Because of the use of HTML the resulting interactive alignment can be viewed on any platform including Windows, Mac OS X, Linux, Android and iOS in any standard web browser. Importantly, no plugins nor Java are required and therefore Alignment-Anotator represents the first interactive browser-based alignment visualization. http://www.bioinformatics.org/strap/aa/ and http://strap.charite.de/aa/. © The Author(s) 2014. Published by Oxford University Press on behalf of Nucleic Acids Research.

  2. Harmful effects of DU in the offspring of the military personnel employed in DU contaminated regions

    International Nuclear Information System (INIS)

    Atlagic, N.; Lisov, Lj.; Barjaktarovic, V.; Djurovic, B.; Spasic, Jokic V.

    2008-01-01

    Full text: In 1999, during the NATO attacks on Kosovo, from AT-10 aircraft has been shot over 50000 30-mm projectiles which contained approximately 15 tones of DU. Besides DU, projectiles contained products of DU radioactive decay as well as americium, neptunium, plutonium and technetium. Due to DU contamination military personnel employed near hit targets could be contaminated and irradiated. Besides the harmful effects in exposed military personnel, harmful effects were noticed in their offsprings, too. DU can cause genetic and teratogenic harmful effects in the embryos/fetus. It is concentrated in semen of contaminated males and also can contaminate the embryo/fetus through placenta. DU, as a toxic and radioactive element, can cause variety of harmful effects, but the most important are the effects on DNA which are the cause of many diseases. The aim of this paper is to examine is there any change in the incidence in heritable effects, congenital malformations, malignant diseases, endocrine and immune disorders. For that reason we compared the incidence of these diseases in the offspring's of military personnel born from 1995-1999 (1204) with the children born from 2000-2004 (1131) / and 2005-2008. Our results showed higher incidence of congenital malformations and chromosomal abnormalities (12.55 % vs 4.57 %), with highest incidence of foot deformity-52.04 % and hip deformity. These abnormalities were followed with immunological disorders and dysfunction of the urine bladder. Endocrine diseases were increased too(2.16 % :1.63 %). In this period higher incidence of malignant diseases was not noticed, but in the second period (from 5-9 year) after 1999, higher incidence of malignant hematological diseases was noticed, as well as Down Sy. During the conflicts future parents as well as embryo/fetus are exposed to many harmfulness and it is very hard to separate the influence of each. Considering the fact that the effects of DU, could be delayed and synergistic with

  3. Accroissement du recours aux politiques fiscales dans la lutte ...

    International Development Research Centre (IDRC) Digital Library (Canada)

    Incidence de la hausse des taxes sur le tabac et du prix des produits du tabac en Ukraine, en Russie et au Bélarus. La recherche destinée aux responsables des politiques de l'Ukraine, de la Russie et du Bélarus mettra en évidence la façon dont les mesures de taxation des produits du tabac peuvent contribuer.

  4. Distribution spatiale du singe à ventre rouge, Cercopithecus ...

    African Journals Online (AJOL)

    danger et endémique du Dahomey Gap est très peu documenté au Togo. Pour connaître sa ..... chaque secteur prospecté ainsi que celui du complexe en entier. ..... 2008-009 portant loi-cadre sur l'environnement au Togo. JO du 06 juin. 2008.

  5. L'AMOUR DANS L'OEUVRE D'EMMANUEL BOVE L'AMOUR DANS L'OEUVRE D'EMMANUEL BOVE

    Directory of Open Access Journals (Sweden)

    Cyril Piroux

    2012-10-01

    Full Text Available Quelle est la place accordée à l’amour dans l’oeuvre d’Emmanuel Bove ? Interrogation paradoxale s’il en est car rien, a priori, ne laisserait entrevoir la possibilité de lier l’oeuvre bovienne au thème du couple amoureux, tant la solitude, la misère et l’égoïsme étouffent ses personnages. Ceux-ci, cependant, pour pathétique que soit leur existence, aspirent sincèrement à aimer. Peut-être se trompent-ils simplement sur l’objet désiré. Un malentendu aux résonances proustiennes vouant chaque relation à la souffrance et à l’échec et qui pourtant mène à la connaissance de soi, l’intérêt du personnage bovien se centrant avant tout sur lui-même.Quelle est la place accordée à l’amour dans l’oeuvre d’Emmanuel Bove ? Interrogation paradoxale s’il en est car rien, a priori, ne laisserait entrevoir la possibilité de lier l’oeuvre bovienne au thème du couple amoureux, tant la solitude, la misère et l’égoïsme étouffent ses personnages. Ceux-ci, cependant, pour pathétique que soit leur existence, aspirent sincèrement à aimer. Peut-être se trompent-ils simplement sur l’objet désiré. Un malentendu aux résonances proustiennes vouant chaque relation à la souffrance et à l’échec et qui pourtant mène à la connaissance de soi, l’intérêt du personnage bovien se centrant avant tout sur lui-même.

  6. Cirque du Monde en tant qu’intervention en santé

    Science.gov (United States)

    Fournier, Cynthia; Drouin, Mélodie-Anne; Marcoux, Jérémie; Garel, Patricia; Bochud, Emmanuel; Théberge, Julie; Aubertin, Patrice; Favreau, Gil; Fleet, Richard

    2014-01-01

    Résumé Objectif Présenter le programme Cirque du Monde du Cirque du Soleil et son potentiel en tant qu’intervention en soins de santé de première ligne pour les médecins de famille. Sources des données Une revue de la littérature menée dans les bases de données PubMed, Cochrane Library, PsycINFO, La Presse, Eureka, Google Scholar et Érudit à l’aide des mots-clés circus, social circus, Cirque du Monde et Cirque du Soleil. Une initiative à Montréal nommée Espace Transition qui s’inspire directement de Cirque du Monde. Communication personnelle avec le conseiller principal en formation en cirque social du Cirque du Soleil. Sélection d’études Les 50 premiers articles ou sites Internet répertoriés pour chaque mot-clé dans chacune des bases de données ciblées ont été révisés sur la base des titres et des résumés, s’il s’agissait d’un article, ou sur la base du titre et du contenu de la page, s’il s’agissait d’une page Internet. Ensuite, les articles et les sites Internet qui étudiaient un aspect du cirque social ou qui présentaient une intervention impliquant le cirque étaient retenus pour une révision. Aucune contrainte d’année de publication n’a été appliquée étant donné qu’on cherchait une littérature générale sur le cirque social. Synthèse Aucun article n’a été trouvé sur le cirque social en tant qu’intervention en santé. Nous avons trouvé une étude sur l’utilisation du cirque en tant qu’intervention en milieu scolaire. Cette étude a démontré une augmentation de l’estime personnelle des enfants grâce à l’intervention. Nous avons trouvé une étude sur l’utilisation du cirque en tant qu’intervention sur une réserve amérindienne. Cette étude présente des résultats qualitatifs non spécifiques au programme du cirque social. Les autres articles répertoriés n’étaient que des descriptions du cirque social. Un site web concernant l’utilisation du cirque social pour

  7. Une force venant du futur chercherait à saboter l'expérience du LHC...

    CERN Multimedia

    Scappaticci, Bruno

    2009-01-01

    "A quelques jours de la reprise de l'expérience du LHC, on ne parle plus de la menace d'un trou noir, mais deux physicines souteinnent aujourd'hui une tout autres hypothèse: la nature, depuis le futur, va continuer de contrarier les travaux du Cern, afin d'éviter à l'Homme de mettre le doigt là où il ne faut pas..." (1.5 pages)

  8. Matere z motnjami v duševnem razvoju

    OpenAIRE

    Kolarič, Sandra

    2015-01-01

    S pregledom tuje literature in že opravljenih raziskav v tujini smo v teoretičnem delu magistrske naloge zajeli značilnosti mater z motnjami v duševnem razvoju, dejavnike, ki vplivajo na uspešnost opravljanja materinske vloge, ter pravice oseb z motnjami v duševnem razvoju do starševstva, v povezavi z zakonodajo na slovenskem. Navedli smo vzroke za omejevanje reprodukcije pri ženskah z motnjami v duševnem razvoju in problematiko odvzema skrbništva materam z motnjami v duševnem razvoju nad otr...

  9. LE RÈGNE DU SÉMIOTIQUE : Fondement de la poéticité du langage romanesque chez Ken Bugul

    Directory of Open Access Journals (Sweden)

    Christian Ahihou

    2011-11-01

    Full Text Available Le règne du sémiotique dans le langage a pour effet le passage au premier plan des formes du langage que sont notamment la musicalité et les jeux de mots. C’est vrai pour Ken Bugul qui a affirmé que : « La langue maternelle, c’est des sentiments, des odeurs, des sonorités, des attouchements. C’est la langue de ma mère et non la langue de la mère de tout le monde ». Certes, le signe ne perd pas sa signification, mais il subit la domination du caractère poétique du langage qui le porte.

  10. RevTrans: multiple alignment of coding DNA from aligned amino acid sequences

    DEFF Research Database (Denmark)

    Wernersson, Rasmus; Pedersen, Anders Gorm

    2003-01-01

    The simple fact that proteins are built from 20 amino acids while DNA only contains four different bases, means that the 'signal-to-noise ratio' in protein sequence alignments is much better than in alignments of DNA. Besides this information-theoretical advantage, protein alignments also benefit...... proteins. It is therefore preferable to align coding DNA at the amino acid level and it is for this purpose we have constructed the program RevTrans. RevTrans constructs a multiple DNA alignment by: (i) translating the DNA; (ii) aligning the resulting peptide sequences; and (iii) building a multiple DNA...

  11. Présentation du volume

    Directory of Open Access Journals (Sweden)

    Ana Zwitter Vitez

    2012-12-01

    Full Text Available Dans de nombreuses disciplines scientifiques, le discours parlé représente depuis quelques décennies un objet de recherche proéminent. Ce fait s’explique probablement par deux caractéristiques principales du discours parlé: la structure complexe de sa matérialité et les fonctions variées de différentes pratiques langagières. C’est pourquoi le présent numéro réunit les articles basés sur les approches actuelles du discours parlé et sur les pratiques langagières spécifiques. Le volume est introduit par deux articles interdisciplinaires: Peter Garrard et Ahmed Samrah présentent le domaine de la pathologie du langage en donnant une revue fouillée sur les approches actuelles de l’analyse linguistique lors de la détection de la maladie d’Alzheimer, tandis que Harry Hollien donne un aperçu structuré sur le domaine de la phonétique judiciaire destiné à dévoiler l’identité des locuteurs et de détecter la déception dans le discours parlé. Les analyses explorant l’acquisition du langage commencent par l’article de Katharina Zipser qui examine la progression de structures grammaticales en les mettant en comparaison avec la compétence des apprenants et continuent par l’étude de Meta Lah proposant une évaluation des documents audiovisuels proposés aux apprenants de langue étrangère. Vesna Požgaj Hadži, Damir Horga et Tatjana Balažic Bulc remettent en question la corrélation entre la compétence linguistique et la fluence linguistique auprès de locuteurs non-maternels et l'analyse de Gemma Santiago Alonso aborde l'acquisition de l'article défini dans le langage enfantin. Les articles suivants se réunissent autour du domaine de l'interprétation: Jana Zidar Forte présente une approche actuelle dans l'entrainement d'interprètes, Lea Burjan analyse les phénomènes issus de la pratique de l'interprétation juridique et Simona  Šumrada traite de la reformulation dans le discours de la traduction et de

  12. Impact du BAO électronique sur l’intention d’achat du consommateur:Le rôle modérateur de l’âge et du genre

    Directory of Open Access Journals (Sweden)

    Manel Hamouda

    2014-03-01

    Full Text Available Les variables sociodémographiques tels que l’âge et le genre sont considérées comme des variables très importantes en comportement du consommateur que ce soit dans un contexte réel ou dans un environnement virtuel. A cet égard, cette recherche se propose d’étudier le rôle de l’âge et du genre dans la relation entre l’intention d’achat du consommateur et le Bouche à oreille électronique (BAO électronique. Les données utilisées dans cette recherche ont été collectées à travers une étude empirique menée sur un échantillon de 204 internautes. Les résultats indiquent que le genre et l’âge constituent deux variables susceptibles de modérer l’intention d’achat du consommateur suite à une exposition à un BAO électronique. Les implications inhérentes pour les chercheurs ainsi que pour les praticiens ont été par ailleurs suggérées.

  13. Les Offices du cinéma éducateur et l’émergence du parlant : l’exemple de l’Office de Nancy

    OpenAIRE

    Laborderie, Pascal

    2014-01-01

    Quelle fut la politique des Offices du cinéma scolaire et éducateur durant la période de généralisation du cinéma parlant ? Une première présentation du dispositif de l’Union française des offices du cinéma éducateur laïque permet de décrire les usages du cinéma par les instituteurs, soit dans leurs enseigne­ments (le cinéma scolaire), soit dans l’éducation des adolescents et des adultes (le cinéma éducateur). Puis une étude de l’Office régional d’enseignement cinématographique de Nancy, à pa...

  14. Proposal for fabrication-tolerant SOI polarization splitter-rotator based on cascaded MMI couplers and an assisted bi-level taper.

    Science.gov (United States)

    Wang, Jing; Qi, Minghao; Xuan, Yi; Huang, Haiyang; Li, You; Li, Ming; Chen, Xin; Jia, Qi; Sheng, Zhen; Wu, Aimin; Li, Wei; Wang, Xi; Zou, Shichang; Gan, Fuwan

    2014-11-17

    A novel silicon-on-insulator (SOI) polarization splitter-rotator (PSR) with a large fabrication tolerance is proposed based on cascaded multimode interference (MMI) couplers and an assisted mode-evolution taper. The tapers are designed to adiabatically convert the input TM(0) mode into the TE(1) mode, which will output as the TE(0) mode after processed by the subsequent MMI mode converter, 90-degree phase shifter (PS) and MMI 3 dB coupler. The numerical simulation results show that the proposed device has a silicon photonics technology.

  15. A linear 180 nm SOI CMOS antenna switch module using integrated passive device filters for cellular applications

    International Nuclear Information System (INIS)

    Cui Jie; Chen Lei; Liu Yi; Zhao Peng; Niu Xu

    2014-01-01

    A broadband monolithic linear single pole, eight throw (SP8T) switch has been fabricated in 180 nm thin film silicon-on-insulator (SOI) CMOS technology with a quad-band GSM harmonic filter in integrated passive devices (IPD) technology, which is developed for cellular applications. The antenna switch module (ASM) features 1.2 dB insertion loss with filter on 2G bands and 0.4 dB insertion loss in 3G bands, less than −45 dB isolation and maximum −103 dB intermodulation distortion for mobile front ends by applying distributed architecture and adaptive supply voltage generator. (semiconductor integrated circuits)

  16. Participation des médecins généralistes de la province de Benimellal (Maroc) dans le dépistage du cancer du col

    Science.gov (United States)

    Nani, Samira; Benallal, Mohamed; Hassoune, Samira; Kissi, Dounia; Maaroufi, Abderrahmane

    2013-01-01

    Introduction Au Maroc, chaque année il y aurait environ 2000 nouveaux cas de cancer du col et les 2/3 des cas sont pris en charge à un stade très avancé. Nous avons mené une étude transversale, exhaustive incluant les 71 médecins généralistes exerçant dans les établissements de soins de santé de base du secteur public et privé de la province de Benimellal. Le but était d’évaluer leurs connaissances et leur participation au dépistage du cancer du col. Méthodes Nous avons mené une étude transversale, exhaustive incluant les 71 médecins généralistes exerçant dans les établissements de soins de santé de base du secteur public et privé de la province de Benimellal. Le but était d’évaluer leurs connaissances et leur participation au dépistage du cancer du col. Résultats Le niveau de connaissance était relativement modeste, 22 médecins généraliste avaient répondu à la question sur l'incidence du cancer du col au Maroc, Parmi eux (81,8%) avaient donné une réponse incorrecte. L'Herpes Papilloma virus comme facteur de risque du cancer du col a été identifié par seulement 21% des médecins généralistes. La participation au dépistage était également défaillante, 92,8% n'avaient jamais pratiqué le FCV chez leurs patientes à cause principalement du manque de formation (95,5%). Conclusion Les résultats montrent la nécessité d'améliorer les connaissances théoriques et pratique des médecins généralistes concernant le dépistage du cancer du col. PMID:23785557

  17. Analysis and modeling of wafer-level process variability in 28 nm FD-SOI using split C-V measurements

    Science.gov (United States)

    Pradeep, Krishna; Poiroux, Thierry; Scheer, Patrick; Juge, André; Gouget, Gilles; Ghibaudo, Gérard

    2018-07-01

    This work details the analysis of wafer level global process variability in 28 nm FD-SOI using split C-V measurements. The proposed approach initially evaluates the native on wafer process variability using efficient extraction methods on split C-V measurements. The on-wafer threshold voltage (VT) variability is first studied and modeled using a simple analytical model. Then, a statistical model based on the Leti-UTSOI compact model is proposed to describe the total C-V variability in different bias conditions. This statistical model is finally used to study the contribution of each process parameter to the total C-V variability.

  18. Séroprévalence et facteurs associés à l’acceptation du Conseil et Dépistage Volontaire du VIH chez l’enfant à Lubumbashi, République Démocratique du Congo

    Science.gov (United States)

    Ngwej, Dieudonné Tshikwej; Mukuku, Olivier; Malonga, Françoise Kaj; Luboya, Oscar Numbi; Kakoma, Jean-Baptiste Sakatolo; Wembonyama, Stanis Okitotsho

    2017-01-01

    Résumé Introduction Malgré le dépistage du VIH proposé lors de la naissance ou au cours des consultations préscolaires, la proportion des enfants qui croissent ou décèdent sous statut sérologique au VIH inconnu est importante en République Démocratique du Congo (RDC). L’objectif de cette étude était de déterminer la séroprévalence au cours d’un dépistage volontaire et d’identifier les facteurs associés à l’acceptation du conseil et dépistage du VIH (CDV) en dehors de la maladie ou de toute exposition au VIH dans une population pédiatrique à Lubumbashi, RDC. Méthodes Il s’agissait d’une étude prospective transversale à visée analytique menée du 1er août 2006 au 31 septembre 2007. Elle avait été réalisée dans 4 centres communautaires de CDV répartis dans 4 zones de santé de la ville de Lubumbashi en RDC (Lubumbashi, Ruashi, Kampemba et de Kenya). L’étude avait consisté à faire le dépistage volontaire du VIH chez les enfants de moins de 15 ans. Les caractéristiques sociodémographiques et les paramètres relatifs au conseil et dépistage volontaire ont été étudiés. Les analyses statistiques descriptives usuelles et une régression logistique ont été réalisées. Résultats Sur 463 enfants dépistés du VIH, 41 (8,9%; IC 95%: 6,5%-11,9%) ont été testés positifs. L’acceptation du conseil et dépistage volontaire du VIH en dehors de la maladie ou de l’exposition au VIH était significativement plus élevée lorsque l’enfant était âgé de plus de 2 ans (Odds ratio ajusté (ORa) = 3,6 [IC 95%: 1,1-12,2]), lorsque le statut sérologique du VIH des parents était négatif ou inconnu (ORa = 27,4 [IC 95%: 9,4-80,0]), lorsque l’un ou l’autre ou les deux parents biologiques étaient en vie (ORa = 24,9 [IC 95%: 2,4-250,8]) et lorsque la connaissance du lieu de dépistage était fait par des moyens autres que le professionnel de santé (ORa = 2,9 [IC 95%: 1,0-7,9]). Conclusion Notre étude montre une forte

  19. Reduced nonlinearities in 100-nm high SOI waveguides

    Science.gov (United States)

    Lacava, C.; Marchetti, R.; Vitali, V.; Cristiani, I.; Giuliani, G.; Fournier, M.; Bernabe, S.; Minzioni, P.

    2016-03-01

    Here we show the results of an experimental analysis dedicated to investigate the impact of optical non linear effects, such as two-photon absorption (TPA), free-carrier absorption (FCA) and free-carrier dispersion (FCD), on the performance of integrated micro-resonator based filters for application in WDM telecommunication systems. The filters were fabricated using SOI (Silicon-on-Insulator) technology by CEA-Leti, in the frame of the FP7 Fabulous Project, which aims to develop low-cost and high-performance integrated optical devices to be used in new generation passive optical- networks (NG-PON2). Different designs were tested, including both ring-based structures and racetrack-based structures, with single-, double- or triple- resonator configuration, and using different waveguide cross-sections (from 500 x 200 nm to 825 x 100 nm). Measurements were carried out using an external cavity tunable laser source operating in the extended telecom bandwidth, using both continuous wave signals and 10 Gbit/s modulated signals. Results show that the use 100-nm high waveguide allows reducing the impact of non-linear losses, with respect to the standard waveguides, thus increasing by more than 3 dB the maximum amount of optical power that can be injected into the devices before causing significant non-linear effects. Measurements with OOK-modulated signals at 10 Gbit/s showed that TPA and FCA don't affect the back-to-back BER of the signal, even when long pseudo-random-bit-sequences (PRBS) are used, as the FCD-induced filter-detuning increases filter losses but "prevents" excessive signal degradation.

  20. Archéologie d’un parasite du cheval

    OpenAIRE

    Dufour, Benjamin; Bailly, Matthieu Le

    2017-01-01

    Oxyuris equi, l’oxyure du cheval, est un vers parasite spécifique des équidés régulièrement mis en évidence lors des études paléoparasitologiques. Nous proposons ici une synthèse originale entre les mentions de ce parasite connues dans la bibliographie et les textes anciens, avec des données inédites issues de nos recherches en paléoparasitologie. Cette compilation des données montre que la plus ancienne observation de l’oxyure du cheval date du milieu du Ier millénaire avant notre ère en Asi...

  1. CHOEUR DU CERN

    CERN Multimedia

    CHOEUR DU CERN

    2010-01-01

    Les répétitions du chœur du CERN reprendront le mercredi 15 septembre à 20.00 heures à l’amphithéâtre principal – bâtiment 500. Au programme la préparation de notre concert de Noël avec la Missa Brevis, KV115, de Léopold Mozart et de la musique de Noël d’Europe. Les personnes qui aiment chanter, notamment des sopranes et des ténors, sont les bienvenues. Pour tout contact s’adresser à : Baudouin Bleus - (tél.CERN 767 82 44) -(baudouin.bleus@cern.ch) ou Martin Gatehouse ( martin.gatehouse@wanadoo.fr) ou Jean-Paul Diss (jean-pauldiss@wanadoo.fr).  

  2. DU weaponry: a view on facts and deceptions

    International Nuclear Information System (INIS)

    Joksimovich, V.

    2002-01-01

    The paper summarizes the results of literature research conducted by the author on the use of depleted uranium (DU) weaponry. The research was initiated during the NATO bombing of Yugoslavia in 1999 with an objective of searching for facts in the presence of massive deceptions staged by the huge propaganda machinery of DU weaponry use proponents. The U.S. made use of DU penetrators in the Persian Gulf war as well as in the Balkan wars both in Bosnia and Kosovo. Brief science and history backgrounds are provided including overviews of DU uses and abuses in these three wars. The U.S./NATO public pronouncements have been centered around the theme that there has been no proven link between DU and cancers. In the author's view, these types of carefully word engineered statements are motivated by possible compensation and cleanup claims rather than supported by hard data and sound science. Since underlying causes of so called Gulf and Balkan syndromes have not been found despite a decade elapsed since conclusion of the Persian Gulf War, the DU must continue to be a front-line suspect. From the standpoint of public health and safety, it is prudent and responsible to call for a moratorium. DU use in the Kosovo war, which was not sanctioned by the UN Security Council, was reckless in the extreme. (author)

  3. Cost-Effective Remediation of Depleted Uranium (DU) at Environmental Restoration Sites

    International Nuclear Information System (INIS)

    MILLER, MARK; GALLOWAY, ROBERT B.; VANDERPOEL, GLENN; JOHNSON, ED; COPLAND, JOHN; SALAZAR, MICHAEL

    1999-01-01

    Numerous sites in the United States and around the world are contaminated with depleted uranium (DU) in various forms. A prevalent form is fragmented DU originating from various scientific tests involving high explosives and DU during weapon-development programs, at firing practice ranges, or in war theaters where DU was used in armor-piercing projectiles. The contamination at these sites is typically very heterogeneous, with discrete, visually identifiable DU fragments mixed with native soil. The bulk-averaged DU activity is quite low, whereas DU fragments, which are distinct from the soil matrix, have much higher specific activity. DU is best known as a dark metal that is nearly twice as dense as lead, but DU in the environment readily weathers (oxidizes) to a distinctive bright yellow color that is quite visible. While the specific activity (amount of radioactivity per mass of soil) of DU is relatively low and presents only a minor radiological hazard, the fact that DU is radioactive and visually identifiable makes it desirable to remove the DU ''contamination'' from the environment. The typical approach to conducting this DU remediation is to use radiation-detection instruments to identify the contaminant and then to separate it from the adjacent soil, packaging it for disposal as radioactive waste. This process can be performed manually or by specialized, automated equipment. Alternatively, a more cost-effective approach might be simple mechanical or gravimetric separation of the DU fragments from the host soil matrix. At SNL/NM, both the automated and simple mechanical approaches have recently been employed. This paper discusses the pros/cons of the two approaches

  4. Autour d'un mystère de l'histoire du livre. Les trois versions du premier volume du Voyage pittoresque de Choiseul-Gouffier

    Directory of Open Access Journals (Sweden)

    Ioannis Koubourlis

    2009-01-01

    Full Text Available Dans cet article, il est question d'un grand mystère de l'histoire du livre, celui de l'existence de trois versions différentes du premier volume du Voyage pittoresque de la Grèce (1782 de Choiseul-Gouffier, c'est-à-dire d'un ouvrage majeur pour la floraison des idées philhellènes dans l'Europe des XVIIIe-XIXe siècles. On sait, grâce à la correspondance de l'auteur, qu'il avait pris la décision de réviser son texte dès 1783, en raison de sa candidature pour le poste d'Ambassadeur de France à Constantinople. Par contre, on n'en sait pas davantage sur le lieu et le temps exacts où il a travaillé les deux nouvelles versions, portant également la date 1782, ni d'ailleurs sur les circonstances de leur édition. Sur la base d'une étude comparative des trois versions du texte, qui met l'accent sur l'argumentation avancée chaque fois par l'auteur, nous formulons ici une série d'hypothèses pour l'interprétation de ce mystère, que nous allons examiner dans leurs détails à partir d'une étude de bibliologie qui suivra le présent article.

  5. La maîtrise du temps comme enjeu de lutte

    OpenAIRE

    Bureau, Marie-Christine; Corsani, Antonella

    2012-01-01

    Le conflit social autour de la réforme du régime d'assurance chômage des intermittents du spectacle a été marqué par son intensité et par sa durée. La thèse défendue ici est que la maîtrise du temps constitue l’un des enjeux majeurs de ce conflit. L'affrontement sur le terrain économique de la régulation de l'emploi et de l'industrie culturelle s'est doublé de l'affrontement sur le temps. La question du temps ne se limite pas à la régulation du temps de travail, elle concerne la maîtrise du t...

  6. MUON DETECTORS: ALIGNMENT

    CERN Multimedia

    S. Szillasi

    2013-01-01

    The CMS detector has been gradually opened and whenever a wheel became exposed the first operation was the removal of the MABs, the sensor structures of the Hardware Barrel Alignment System. By the last days of June all 36 MABs have arrived at the Alignment Lab at the ISR where, as part of the Alignment Upgrade Project, they are refurbished with new Survey target holders. Their electronic checkout is on the way and finally they will be recalibrated. During LS1 the alignment system will be upgraded in order to allow more precise reconstruction of the MB4 chambers in Sector 10 and Sector 4. This requires new sensor components, so called MiniMABs (pictured below), that have already been assembled and calibrated. Image 6: Calibrated MiniMABs are ready for installation For the track-based alignment, the systematic uncertainties of the algorithm are under scrutiny: this study will enable the production of an improved Monte Carlo misalignment scenario and to update alignment position errors eventually, crucial...

  7. Avallon (Yonne, note sur l’effondrement du petit surplomb du rempart, au chevet de la collégiale Saint-Lazare

    Directory of Open Access Journals (Sweden)

    Virginie Jolly

    2006-09-01

    Full Text Available Suite à l’effondrement d’un élément de l’enceinte urbaine durant l’hiver 2004, une intervention a été souhaitée conjointement par le Service Régional de l’Archéologie de Dijon (DRAC Bourgogne et la Municipalité d’Avallon (Yonne. La zone concernée, située à l’est de la ville médiévale, sur le rempart, est en contact direct avec l’esplanade du chevet de la collégiale Saint-Lazare. La configuration escarpée et dangereuse du terrain —instabilité du sol en partie haute et effritement du mur— a l...

  8. Astronomical Alignments in a Neolithic Chinese Site?

    Science.gov (United States)

    Nelson, S.; Stencel, R. E.

    1997-12-01

    In the Manchurian province of Liaoning, near 41N19' and 119E30', exist ruins of a middle Neolithic society (2500 to 4000 BC) known as the Hongshan culture. This location, called Niuheliang, is comprised of 16 locations with monumental structures scattered over 80 square kilometers of hills. Most are stone burial structures that contain jade artifacts implying wealth and power. One structure is unique in being unusually shaped and containing oversized effigies of goddess figures. This structure also has a commanding view of the surrounding landscape. The presence of decorated pottery, jade and worked copper suggests the Hongshan people were sophisticated artisans and engaged in long-distance trading. During 1997, we've conducted a course at Denver as part of our Core Curriculum program for upper division students, that has examined the astronomical and cultural aspects of the Niuheliang site, to attempt to determine whether these contemporaries of the builders of Stonehenge may have included astronomical alignments into their constructions. The preliminary result of our studies suggests that certain monuments have potential for lunar standstill observation from the "goddess temple". For updates on these results, please see our website: www.du.edu/ rstencel/core2103.html.

  9. Design, modeling, fabrication and characterization of an electret-based MEMS electrostatic energy harvester

    NARCIS (Netherlands)

    Altena, G.; Hohlfeld, D.; Elfrink, R.; Goedbloed, M.H.; Schaijk, R. van

    2011-01-01

    This paper reports on the design, modelling, fabrication and characterization of an electret-based MEMS electrostatic energy harvester with an elegant and robust process flow. The fabrication is based on a SOI wafer with self-aligned electrodes of the variable capacitor. The output current of the

  10. Design and application of 8-channel SOI-based AWG demultiplexer for CWDM-system

    International Nuclear Information System (INIS)

    Juhari, Nurjuliana; Menon, P. Susthitha; Ehsan, Abang Annuar; Shaari, Sahbudin

    2015-01-01

    Arrayed Waveguide Grating (AWG) serving as a demultiplexer (demux) has been designed on SOI platform and was utilized in a Coarse Wavelength Division Multiplexing (CWDM) system ranging from 1471 nm to 1611 nm. The investigation was carried out at device and system levels. At device level, 20 nm (∼ 2500 GHz) channel spacing was successfully simulated using beam propagation method (BPM) under TE mode polarization with a unique double S-shape pattern at arrays region. The performance of optical properties gave the low values of 0.96 dB dB for insertion loss and – 22.38 dB for optical crosstalk. AWG device was then successfully used as demultiplexer in CWDM system when 10 Gb/s data rate was applied in the system. Limitation of signal power due to attenuation and fiber dispersion detected by BER analyzer =10 −9 of the system was compared with theoretical value. Hence, the maximum distance of optical fiber can be achieved

  11. Design and application of 8-channel SOI-based AWG demultiplexer for CWDM-system

    Energy Technology Data Exchange (ETDEWEB)

    Juhari, Nurjuliana; Menon, P. Susthitha; Ehsan, Abang Annuar; Shaari, Sahbudin [Institute of Microengineering and Nanoelectronics (IMEN), Universiti Kebangsaan Malaysia (UKM), 43600 UKM Bangi, Selangor (Malaysia)

    2015-04-24

    Arrayed Waveguide Grating (AWG) serving as a demultiplexer (demux) has been designed on SOI platform and was utilized in a Coarse Wavelength Division Multiplexing (CWDM) system ranging from 1471 nm to 1611 nm. The investigation was carried out at device and system levels. At device level, 20 nm (∼ 2500 GHz) channel spacing was successfully simulated using beam propagation method (BPM) under TE mode polarization with a unique double S-shape pattern at arrays region. The performance of optical properties gave the low values of 0.96 dB dB for insertion loss and – 22.38 dB for optical crosstalk. AWG device was then successfully used as demultiplexer in CWDM system when 10 Gb/s data rate was applied in the system. Limitation of signal power due to attenuation and fiber dispersion detected by BER analyzer =10{sup −9} of the system was compared with theoretical value. Hence, the maximum distance of optical fiber can be achieved.

  12. Effects of ultra-thin Si-fin body widths upon SOI PMOS FinFETs

    Science.gov (United States)

    Liaw, Yue-Gie; Chen, Chii-Wen; Liao, Wen-Shiang; Wang, Mu-Chun; Zou, Xuecheng

    2018-05-01

    Nano-node tri-gate FinFET devices have been developed after integrating a 14 Å nitrided gate oxide upon the silicon-on-insulator (SOI) wafers established on an advanced CMOS logic platform. These vertical double gate (FinFET) devices with ultra-thin silicon fin (Si-fin) widths ranging from 27 nm to 17 nm and gate length down to 30 nm have been successfully developed with a 193 nm scanner lithography tool. Combining the cobalt fully silicidation and the CESL strain technology beneficial for PMOS FinFETs was incorporated into this work. Detailed analyses of Id-Vg characteristics, threshold voltage (Vt), and drain-induced barrier lowering (DIBL) illustrate that the thinnest 17 nm Si-fin width FinFET exhibits the best gate controllability due to its better suppression of short channel effect (SCE). However, higher source/drain resistance (RSD), channel mobility degradation due to dry etch steps, or “current crowding effect” will slightly limit its transconductance (Gm) and drive current.

  13. Portage vaginal du streptocoque du groupe B chez la femme enceinte au niveau de la région de Marrakech

    Science.gov (United States)

    Bassir, Ahlam; Dhibou, Hanane; Farah, Majdi; Mohamed, Lharmis; Amal, Addebous; Nabila, Souraa; Abderahim, Aboulfalah; Asmouki, Hamid; Soummani, Abderraouf

    2016-01-01

    Introduction Le streptocoque du groupe B est le principal agent impliqué dans les infections materno-fœtales, les septicémies et les méningites du nouveau-né à terme. L'objectif est de déterminer le taux de portage maternel du streptocoque du groupe B (SGB) à terme. Méthodes Un prélèvement vaginal a été réalisé de manière prospective chez 275 parturientes lors de l'entrée en salle d'accouchement sur une période de 06 mois. Résultats Le taux de portage était de 20,2%. Le portage était variable en fonction de l’âge gestationnel, il constitue 57.5% entre 37 et 38 semaines d'aménorrhée. Aucun des facteurs de risque n'a était statistiquement prédictif du portage maternel du SGB. Conclusion Le dépistage doit être réalisé à partir de 37 semaines d'aménorrhée, et comme le portage est intermittent, un prélèvement négatif ne garantirait pas que le portage soit négatif à l'accouchement. PMID:27222693

  14. Una introduzione ai software per il crime mapping / Observations préliminaires sur les logiciels du mappage du crime / Some introductory notes on crime mapping software

    Directory of Open Access Journals (Sweden)

    Ummarino Alessandro

    2013-03-01

    Full Text Available RiassuntoIl Crime Mapping più che una disciplina a se stante non è altro che l’applicazione di tecniche di analisi statistico-geografica allo studio dei reati. Grazie all’utilizzo dei software GIS (Geographic Information System, all’esponenziale sviluppo dell’informatica e alla facile accessibilità al web, la produzione di mappe di qualità è ormai alla portata di un qualunque utente medio. La possibilità di applicare tali tecniche di analisi è offerta in modo efficace da software GIS commerciali e da software GIS free e open source. Chi si vuole avvicinare a questa disciplina, sia che intenda procedere con applicazioni di tipo tattico (pianificazione dei controlli, attività di prevenzione, investigazioni giudiziarie, etc. sia che intenda svolgere degli studi di tipo sociologico (criminalità, devianza, illegalità diffusa, percezione della sicurezza, etc., deve comunque acquisire una solida preparazione di base nell’utilizzo di programmi GIS prima di inferire generalizzazioni dai risultati utilizzando chiavi di lettura provenienti dalle scienze sociali. Il Crime Mapping può trovare una valida applicazione nell’ambito di una generale attività di polizia, soprattutto a livello locale, per la gestione delle risorse destinate alla sicurezza, per la programmazione dei servizi di polizia e soprattutto quale supporto di tipo tattico nell’ambito di attività mirate alla repressione e alla prevenzione di specifici atti criminosi e illeciti. Le mappage du crime n’est pas simplement une discipline en soi, mais une application de techniques d’analyse statistiques et géographiques à l’étude du crime. Grâce au développement exponentiel de l’informatique et à l’accessibilité du Web , tous les utilisateurs moyens ont désormais la possibilité de produire des cartes des crimes de qualité avec le logiciel SIG (système d'information géographique (GIS - Geographic Information System. Aujourd’hui la possibilité de se

  15. MaxAlign: maximizing usable data in an alignment

    DEFF Research Database (Denmark)

    Oliveira, Rodrigo Gouveia; Sackett, Peter Wad; Pedersen, Anders Gorm

    2007-01-01

    Align. In this paper we also introduce a new simple measure of tree similarity, Normalized Symmetric Similarity (NSS) that we consider useful for comparing tree topologies. CONCLUSION: We demonstrate how MaxAlign is helpful in detecting misaligned or defective sequences without requiring manual inspection. We also...

  16. Aligning for Innovation - Alignment Strategy to Drive Innovation

    Science.gov (United States)

    Johnson, Hurel; Teltschik, David; Bussey, Horace, Jr.; Moy, James

    2010-01-01

    With the sudden need for innovation that will help the country achieve its long-term space exploration objectives, the question of whether NASA is aligned effectively to drive the innovation that it so desperately needs to take space exploration to the next level should be entertained. Authors such as Robert Kaplan and David North have noted that companies that use a formal system for implementing strategy consistently outperform their peers. They have outlined a six-stage management systems model for implementing strategy, which includes the aligning of the organization towards its objectives. This involves the alignment of the organization from the top down. This presentation will explore the impacts of existing U.S. industrial policy on technological innovation; assess the current NASA organizational alignment and its impacts on driving technological innovation; and finally suggest an alternative approach that may drive the innovation needed to take the world to the next level of space exploration, with NASA truly leading the way.

  17. Design and fabrication of two kind of SOI-based EA-type VOAs

    Science.gov (United States)

    Yuan, Pei; Wang, Yue; Wu, Yuanda; An, Junming; Hu, Xiongwei

    2018-06-01

    SOI-based variable optical attenuators based on electro-absorption mechanism are demonstrated in this paper. Two different doping structures are adopted to realize the attenuation: a structure with a single lateral p-i-n diode and a structure with several lateral p-i-n diodes connected in series. The VOAs with lateral p-i-n diodes connected in series (series VOA) can greatly improve the device attenuation efficiency compared to VOAs with a single lateral p-i-n diode structure (single VOA), which is verified by the experimental results that the attenuation efficiency of the series VOA and the single VOA is 3.76 dB/mA and 0.189 dB/mA respectively. The corresponding power consumption at 20 dB attenuation is 202 mW (series VOA) and 424 mW (single VOA) respectively. The raise time is 34.5 ns (single VOA) and 45.5 ns (series VOA), and the fall time is 37 ns (single VOA) and 48.5 ns (series VOA).

  18. Spacer engineered Trigate SOI TFET: An investigation towards harsh temperature environment applications

    Science.gov (United States)

    Mallikarjunarao; Ranjan, Rajeev; Pradhan, K. P.; Artola, L.; Sahu, P. K.

    2016-09-01

    In this paper, a novel N-channel Tunnel Field Effect Transistor (TFET) i.e., Trigate Silicon-ON-Insulator (SOI) N-TFET with high-k spacer is proposed for better Sub-threshold swing (SS) and OFF-state current (IOFF) by keeping in mind the sensitivity towards temperature. The proposed model can achieve a Sub-threshold swing less than 35 mV/decade at various temperatures, which is desirable for designing low power CTFET for digital circuit applications. In N-TFET source doping has a significant effect on the ON-state current (ION) level; therefore more electrons will tunnel from source to channel region. High-k Spacer i.e., HfO2 is used to enhance the device performance and also it avoids overlapping of transistors in an integrated circuits (IC's). We have designed a reliable device by performing the temperature analysis on Transfer characteristics, Drain characteristics and also on various performance metrics like ON-state current (ION), OFF-state current (IOFF), ION/IOFF, Trans-conductance (gm), Trans-conductance Generation Factor (TGF), Sub-threshold Swing (SS) to observe the applications towards harsh temperature environment.

  19. Économie hévéicole et engagement politique des jeunes ...

    African Journals Online (AJOL)

    dans la gouvernance locale du département de Bettié à l'est de la Côte d'Ivoire. ..... l'enjeu proprement politique que constitue la présentation de soi. K. B. est né en 1963 à .... dehors de son activité professionnelle, le pharmacien s'intéresse au sport, au football en .... Cette modification, estimée préjudiciable aux candidats ...

  20. Main: 1DU5 [RPSD[Archive

    Lifescience Database Archive (English)

    Full Text Available 1DU5 トウモロコシ Corn Zea mays L. Zeamatin Precursor. Name=Zlp; Zea Mays Molecule: Zeamatin; Chai...eta Sandwich SWS:ZEAM_MAIZE,P33679|EMBL; U06831; AAA92882.1; -.|PIR; T02075; T02075.|PDB; 1DU5; X-ray; A/B=22-227.|Mai

  1. Control rod housing alignment

    International Nuclear Information System (INIS)

    Dixon, R.C.; Deaver, G.A.; Punches, J.R.; Singleton, G.E.; Erbes, J.G.; Offer, H.P.

    1990-01-01

    This patent describes a process for measuring the vertical alignment between a hole in a core plate and the top of a corresponding control rod drive housing within a boiling water reactor. It comprises: providing an alignment apparatus. The alignment apparatus including a lower end for fitting to the top of the control rod drive housing; an upper end for fitting to the aperture in the core plate, and a leveling means attached to the alignment apparatus to read out the difference in angularity with respect to gravity, and alignment pin registering means for registering to the alignment pin on the core plate; lowering the alignment device on a depending support through a lattice position in the top guide through the hole in the core plate down into registered contact with the top of the control rod drive housing; registering the upper end to the sides of the hole in the core plate; registering the alignment pin registering means to an alignment pin on the core plate to impart to the alignment device the required angularity; and reading out the angle of the control rod drive housing with respect to the hole in the core plate through the leveling devices whereby the angularity of the top of the control rod drive housing with respect to the hole in the core plate can be determined

  2. Aux origines du monde

    CERN Multimedia

    2004-01-01

    "C'est l'histoire d'une aventure humaine, scientifique, international qui a vu le jour il y a cinquante ans, aux confins de la Suisse et du département de l'Ain. Le plus grand laboratoire de physique des particules du monde, le Cern, a été fondé en 1954. Les festivités organisées à l occasion de cet anniversaire connaîtront leur point d'orgue le 16 octobre prochain, avec portes-ouvertes, accueil de personallités et inauguration d'un monumnet spécifique, le Globe de l'innovation" (2 pages)

  3. Le désordre du monde

    African Journals Online (AJOL)

    sulaiman.adebowale

    Le début du XXIe siècle se caractérise par l'accumulation et la consécution ..... Unis a présidé à la naissance aux forceps de cet outil d'équilibre du monde en ... De toute évidence, l'ONU reste l'instrument qui a marqué le siècle dernier,.

  4. MUON DETECTORS: ALIGNMENT

    CERN Multimedia

    G. Gomez

    2012-01-01

      A new muon alignment has been produced for 2012 A+B data reconstruction. It uses the latest Tracker alignment and single-muon data samples to align both DTs and CSCs. Physics validation has been performed and shows a modest improvement in stand-alone muon momentum resolution in the barrel, where the alignment is essentially unchanged from the previous version. The reference-target track-based algorithm using only collision muons is employed for the first time to align the CSCs, and a substantial improvement in resolution is observed in the endcap and overlap regions for stand-alone muons. This new alignment is undergoing the approval process and is expected to be deployed as part of a new global tag in the beginning of December. The pT dependence of the φ-bias in curvature observed in Monte Carlo was traced to a relative vertical misalignment between the Tracker and barrel muon systems. Moving the barrel as a whole to match the Tracker cures this pT dependence, leaving only the &phi...

  5. Simulation of beamline alignment operations

    International Nuclear Information System (INIS)

    Annese, C; Miller, M G.

    1999-01-01

    The CORBA-based Simulator was a Laboratory Directed Research and Development (LDRD) project that applied simulation techniques to explore critical questions about distributed control systems. The simulator project used a three-prong approach that studied object-oriented distribution tools, computer network modeling, and simulation of key control system scenarios. The National Ignition Facility's (NIF) optical alignment system was modeled to study control system operations. The alignment of NIF's 192 beamlines is a large complex operation involving more than 100 computer systems and 8000 mechanized devices. The alignment process is defined by a detailed set of procedures; however, many of the steps are deterministic. The alignment steps for a poorly aligned component are similar to that of a nearly aligned component; however, additional operations/iterations are required to complete the process. Thus, the same alignment operations will require variable amounts of time to perform depending on the current alignment condition as well as other factors. Simulation of the alignment process is necessary to understand beamline alignment time requirements and how shared resources such as the Output Sensor and Target Alignment Sensor effect alignment efficiency. The simulation has provided alignment time estimates and other results based on documented alignment procedures and alignment experience gained in the laboratory. Computer communication time, mechanical hardware actuation times, image processing algorithm execution times, etc. have been experimentally determined and incorporated into the model. Previous analysis of alignment operations utilized average implementation times for all alignment operations. Resource sharing becomes rather simple to model when only average values are used. The time required to actually implement the many individual alignment operations will be quite dynamic. The simulation model estimates the time to complete an operation using

  6. CAB-Align: A Flexible Protein Structure Alignment Method Based on the Residue-Residue Contact Area.

    Directory of Open Access Journals (Sweden)

    Genki Terashi

    Full Text Available Proteins are flexible, and this flexibility has an essential functional role. Flexibility can be observed in loop regions, rearrangements between secondary structure elements, and conformational changes between entire domains. However, most protein structure alignment methods treat protein structures as rigid bodies. Thus, these methods fail to identify the equivalences of residue pairs in regions with flexibility. In this study, we considered that the evolutionary relationship between proteins corresponds directly to the residue-residue physical contacts rather than the three-dimensional (3D coordinates of proteins. Thus, we developed a new protein structure alignment method, contact area-based alignment (CAB-align, which uses the residue-residue contact area to identify regions of similarity. The main purpose of CAB-align is to identify homologous relationships at the residue level between related protein structures. The CAB-align procedure comprises two main steps: First, a rigid-body alignment method based on local and global 3D structure superposition is employed to generate a sufficient number of initial alignments. Then, iterative dynamic programming is executed to find the optimal alignment. We evaluated the performance and advantages of CAB-align based on four main points: (1 agreement with the gold standard alignment, (2 alignment quality based on an evolutionary relationship without 3D coordinate superposition, (3 consistency of the multiple alignments, and (4 classification agreement with the gold standard classification. Comparisons of CAB-align with other state-of-the-art protein structure alignment methods (TM-align, FATCAT, and DaliLite using our benchmark dataset showed that CAB-align performed robustly in obtaining high-quality alignments and generating consistent multiple alignments with high coverage and accuracy rates, and it performed extremely well when discriminating between homologous and nonhomologous pairs of proteins

  7. CAB-Align: A Flexible Protein Structure Alignment Method Based on the Residue-Residue Contact Area.

    Science.gov (United States)

    Terashi, Genki; Takeda-Shitaka, Mayuko

    2015-01-01

    Proteins are flexible, and this flexibility has an essential functional role. Flexibility can be observed in loop regions, rearrangements between secondary structure elements, and conformational changes between entire domains. However, most protein structure alignment methods treat protein structures as rigid bodies. Thus, these methods fail to identify the equivalences of residue pairs in regions with flexibility. In this study, we considered that the evolutionary relationship between proteins corresponds directly to the residue-residue physical contacts rather than the three-dimensional (3D) coordinates of proteins. Thus, we developed a new protein structure alignment method, contact area-based alignment (CAB-align), which uses the residue-residue contact area to identify regions of similarity. The main purpose of CAB-align is to identify homologous relationships at the residue level between related protein structures. The CAB-align procedure comprises two main steps: First, a rigid-body alignment method based on local and global 3D structure superposition is employed to generate a sufficient number of initial alignments. Then, iterative dynamic programming is executed to find the optimal alignment. We evaluated the performance and advantages of CAB-align based on four main points: (1) agreement with the gold standard alignment, (2) alignment quality based on an evolutionary relationship without 3D coordinate superposition, (3) consistency of the multiple alignments, and (4) classification agreement with the gold standard classification. Comparisons of CAB-align with other state-of-the-art protein structure alignment methods (TM-align, FATCAT, and DaliLite) using our benchmark dataset showed that CAB-align performed robustly in obtaining high-quality alignments and generating consistent multiple alignments with high coverage and accuracy rates, and it performed extremely well when discriminating between homologous and nonhomologous pairs of proteins in both

  8. BinAligner: a heuristic method to align biological networks.

    Science.gov (United States)

    Yang, Jialiang; Li, Jun; Grünewald, Stefan; Wan, Xiu-Feng

    2013-01-01

    The advances in high throughput omics technologies have made it possible to characterize molecular interactions within and across various species. Alignments and comparison of molecular networks across species will help detect orthologs and conserved functional modules and provide insights on the evolutionary relationships of the compared species. However, such analyses are not trivial due to the complexity of network and high computational cost. Here we develop a mixture of global and local algorithm, BinAligner, for network alignments. Based on the hypotheses that the similarity between two vertices across networks would be context dependent and that the information from the edges and the structures of subnetworks can be more informative than vertices alone, two scoring schema, 1-neighborhood subnetwork and graphlet, were introduced to derive the scoring matrices between networks, besides the commonly used scoring scheme from vertices. Then the alignment problem is formulated as an assignment problem, which is solved by the combinatorial optimization algorithm, such as the Hungarian method. The proposed algorithm was applied and validated in aligning the protein-protein interaction network of Kaposi's sarcoma associated herpesvirus (KSHV) and that of varicella zoster virus (VZV). Interestingly, we identified several putative functional orthologous proteins with similar functions but very low sequence similarity between the two viruses. For example, KSHV open reading frame 56 (ORF56) and VZV ORF55 are helicase-primase subunits with sequence identity 14.6%, and KSHV ORF75 and VZV ORF44 are tegument proteins with sequence identity 15.3%. These functional pairs can not be identified if one restricts the alignment into orthologous protein pairs. In addition, BinAligner identified a conserved pathway between two viruses, which consists of 7 orthologous protein pairs and these proteins are connected by conserved links. This pathway might be crucial for virus packing and

  9. Evolution tectono-sédimentaire du bassin de Talara (nord-ouest du Pérou

    Directory of Open Access Journals (Sweden)

    1987-01-01

    Full Text Available Le bassin pétrolier de Talara, dans le nord-ouest du Pérou, est rempli par des séries terrigènes fluvio-deltaïques du Campanien à l'Eocène Supérieur. Cinq cycles de sédimentation (A, B, C, D, E sont définis par des séquences grano-décroissantes d'approfondissement du bassin, à l'exception du cycle B qui résulte de la progradation du système fluviatile. L'activité tectonique distensive qui domine l'évolution du bassin et contrôle la nature et la répartition des sédiments est interrompue, pendant l'Eocène Moyen, lorsque des chevauchements vers le sud-est se mettent en place dans la série tertiaire décollée du socle. Au front des chevauchements actifs, se forment des olistolithes ainsi que des brèches syntectoniques. L'analyse de la déformation en avant des failles inverses montre que les chevauchements se faisaient vers le sud-est et qu'ils affectaient des sédiments peu lithifïés. La cuenca sedimentaria y petrolera de Talara, en el noroeste del Perú, está rellena por secuencias fluvio-deltaicas del Campaniano al Eoceno Superior. Cinco ciclos de sedimentación (A,B,C,D,E están definidos por secuencias grano-decrecientes de hundimiento, excepto el ciclo B que representa una secuencia grano-creciente de progradación fluvial. La tectónica en distensión domina la evolución de la cuenca y también controla el tipo y la distribución de los sedimentos. Sin embargo, durante el Eoceno Medio, suceden cabalgamientos hacia el sureste, dentro de la cubierta sedimentaria terciaria despegada sobre el basamento paleozoico. Olistolitos y brechas tectónicas se forman en la parte frontal de los cabalgamientos donde el análisis de la deformación muestra que éstos se desarrollaron hacia el sureste y que afectaron sedimentos aún no litificados. Talara oil-basin in NW Peru is filled by fluvio-deltaic series of Campanian to Upper Eocene age. Five sedimentation Cycles (A,B,C,D,E are defined by fining-upward sequences resulting from

  10. Prediction of molecular alignment of nucleic acids in aligned media

    International Nuclear Information System (INIS)

    Wu Bin; Petersen, Michael; Girard, Frederic; Tessari, Marco; Wijmenga, Sybren S.

    2006-01-01

    We demonstrate - using the data base of all deposited DNA and RNA structures aligned in Pf1-medium and RDC refined - that for nucleic acids in a Pf1-medium the electrostatic alignment tensor can be predicted reliably and accurately via a simple and fast calculation based on the gyration tensor spanned out by the phosphodiester atoms. The rhombicity is well predicted over its full range from 0 to 0.66, while the alignment tensor orientation is predicted correctly for rhombicities up to ca. 0.4, for larger rhombicities it appears to deviate somewhat more than expected based on structural noise and measurement error. This simple analytical approach is based on the Debye-Huckel approximation for the electrostatic interaction potential, valid at distances sufficiently far away from a poly-ionic charged surface, a condition naturally enforced when the charge of alignment medium and solute are of equal sign, as for nucleic acids in a Pf1-phage medium. For the usual salt strengths and nucleic acid sizes, the Debye-Huckel screening length is smaller than the nucleic acid size, but large enough for the collective of Debye-Huckel spheres to encompass the whole molecule. The molecular alignment is then purely electrostatic, but it's functional form is under these conditions similar to that for steric alignment. The proposed analytical expression allows for very fast calculation of the alignment tensor and hence RDCs from the conformation of the nucleic acid molecule. This information provides opportunities for improved structure determination of nucleic acids, including better assessment of dynamics in (multi-domain) nucleic acids and the possibility to incorporate alignment tensor prediction from shape directly into the structure calculation process. The procedures are incorporated into MATLAB scripts, which are available on request

  11. Effets du barrage sur l'volution du trait de côte | Blivi | Journal de la ...

    African Journals Online (AJOL)

    Effets du barrage sur l'volution du trait de côte. A. Blivi. Abstract. (J. de la Recherche Scientifique de l'Université de Lomé, 2000, 4(1): 29-42). Full Text: EMAIL FULL TEXT EMAIL FULL TEXT · DOWNLOAD FULL TEXT DOWNLOAD FULL TEXT · http://dx.doi.org/10.4314/jrsul.v4i1.16996 · AJOL African Journals Online.

  12. Le parcours migratoire de jeunes ruraux du bled du kif

    Directory of Open Access Journals (Sweden)

    Khalid Mouna

    2015-06-01

    Full Text Available Cet article analyse le parcours migratoire des jeunes ruraux originaires des zones de production du cannabis, jeunes qui cherchent à briser les chaînes de soumission et d’humiliation vécues au quotidien. Pour les jeunes concernés par notre étude, la migration constitue un moyen de s’intégrer dans des réseaux transnationaux et ainsi d’entamer une carrière de beznass (commerçant du cannabis. Ce parcours « initiatique » permet à ces jeunes de revenir au bled avec de nouvelles idées, des moyens accrus, et de jouer un rôle actif dans l’économie locale – qui reste pour eux focalisée sur la production de cannabis, cette dernière restant néanmoins officiellement interdite.

  13. Roman contre roman dans l’organisation du manuscrit du Vatican, Regina Latina 1725

    Directory of Open Access Journals (Sweden)

    Francis Gingras

    2012-08-01

    Full Text Available Alors que les développements structuralistes et post-structuralistes ont favorisé la “textualisation” de la littérature médiévale, l’auteur suggère que la recontextualisation de la réception du roman médiéval passe par un retour aux manuscrits. Appliquée au manuscrit du Vatican, Regina Latina 1725, cette hypothèse de recherche révèle une technique de contrepoint que permet la juxtaposition de différents romans et dont, en dernier recours, le lecteur est toujours un peu juge.

  14. A new prosthetic alignment device to read and record prosthesis alignment data.

    Science.gov (United States)

    Pirouzi, Gholamhossein; Abu Osman, Noor Azuan; Ali, Sadeeq; Davoodi Makinejad, Majid

    2017-12-01

    Prosthetic alignment is an essential process to rehabilitate patients with amputations. This study presents, for the first time, an invented device to read and record prosthesis alignment data. The digital device consists of seven main parts: the trigger, internal shaft, shell, sensor adjustment button, digital display, sliding shell, and tip. The alignment data were read and recorded by the user or a computer to replicate prosthesis adjustment for future use or examine the sequence of changes in alignment and its effect on the posture of the patient. Alignment data were recorded at the anterior/posterior and medial/lateral positions for five patients. Results show the high level of confidence to record alignment data and replicate adjustments. Therefore, the device helps patients readjust their prosthesis by themselves, or prosthetists to perform adjustment for patients and analyze the effects of malalignment.

  15. Device fabrication and transport measurements of FinFETs built with 28Si SOI wafers towards donor qubits in silicon

    Energy Technology Data Exchange (ETDEWEB)

    Lo, Cheuk Chi; Persaud, Arun; Dhuey, Scott; Olynick, Deirdre; Borondics, Ferenc; Martin, Michael C.; Bechtel, Hans A.; Bokor, Jeffrey; Schenkel, Thomas

    2009-06-10

    We report fabrication of transistors in a FinFET geometry using isotopically purified silicon-28 -on-insulator (28-SOI) substrates. Donor electron spin coherence in natural silicon is limited by spectral diffusion due to the residual 29Si nuclear spin bath, making isotopically enriched nuclear spin-free 28Si substrates a promising candidate for forming spin quantum bit devices. The FinFET architecture is fully compatible with single-ion implant detection for donor-based qubits, and the donor spin-state readout through electrical detection of spin resonance. We describe device processing steps and discuss results on electrical transport measurements at 0.3 K.

  16. Etude de l'origine du citronellol dans les vins

    Directory of Open Access Journals (Sweden)

    Isabelle Dugelay

    1992-09-01

    Full Text Available La formation du citronellol à partir du géraniol et du nérol au cours de la fermentation de moûts synthétiques et naturels de raisin par différentes souches de levures a été étudiée. Le géraniol et le nérol sont transformés en citronellol par la levure, ceci de façon plus marquée avec le géraniol. La quantité de citronellol formé dépend de la souche de levure utilisée. D'autres monoterpènes, comme les acétates de géranyle et de néryle et l'α-terpinéol, sont aussi formés au cours de la fermentation. La préparation enzymatique utilisée n'a pas montré d'activités réductases vis-à-vis du géraniol et du nérol pour former du citronellol.

  17. Effects of variable attachment shapes and aligner material on aligner retention.

    Science.gov (United States)

    Dasy, Hiltrud; Dasy, Andreas; Asatrian, Greg; Rózsa, Noémi; Lee, Hao-Fu; Kwak, Jin Hee

    2015-11-01

    To evaluate the retention of four types of aligners on a dental arch with various attachments. For this study, three casts were manufactured, two of which contained attachments (ellipsoid and beveled), and one without any attachments to serve as a control. Four types of aligners were thermoformed: Clear-Aligner (CA)-soft, CA-medium, and CA-hard, with various thicknesses, and Essix ACE. Measurements of vertical displacement force during aligner removal were performed with the Gabo Qualimeter Eplexor. Means and standard deviations were next compared between different aligner thicknesses and attachment shapes. CA-soft, CA-medium, and CA-hard did not present a significant increase in retention, except when used in the presence of attachments. Additionally, CA-medium and CA-hard required significantly more force for removal. Essix ACE demonstrated a significant decrease in retention when used with ellipsoid attachments. The force value for Essix ACE removal from the cast with beveled attachments was comparable to that of CA-medium. Forces for aligner removal from the model without attachments showed a linear trend. Essix ACE did not show a continuous increase in retention for each model. Overall, ellipsoid attachments did not present a significant change in retention. In contrast, beveled attachments improved retention. Ellipsoid attachments had no significant influence on the force required for aligner removal and hence on aligner retention. Essix ACE showed significantly less retention than CA-hard on the models with attachments. Furthermore, beveled attachments were observed to increase retention significantly, compared with ellipsoid attachments and when using no attachments.

  18. Cirque du Monde as a health intervention

    Science.gov (United States)

    Fournier, Cynthia; Drouin, Mélodie-Anne; Marcoux, Jérémie; Garel, Patricia; Bochud, Emmanuel; Théberge, Julie; Aubertin, Patrice; Favreau, Gil; Fleet, Richard

    2014-01-01

    Abstract Objective To present Cirque du Soleil’s social circus program, Cirque du Monde, to explore its potential as a primary health care tool for family physicians. Data sources A review of the literature in PubMed, the Cochrane Library, PsycINFO, LaPresse, Eureka, Google Scholar, and Érudit using the key words circus, social circus, Cirque du Monde, and Cirque du Soleil; a Montreal-based initiative, Espace Transition, modeled on Cirque du Monde; and personal communication with Cirque du Soleil’s Social Circus Training Advisor. Study selection The first 50 articles or websites identified for each key word in each of the databases were examined on the basis of their titles and abstracts in the case of articles, and on the basis of their titles and page content in the case of websites. Articles and websites that explored an aspect of social circuses or that described an intervention that involved circuses were then retained for analysis. Because all literature on social circuses was searched, no criterion for year of publication was used. Synthesis No articles on the social circus as a health intervention were found. One study on the use of the circus as an intervention in schools was identified. It demonstrated an increase in self-esteem in the children who took part. One study on the use of the circus in a First Nations community was found; it contained nonspecific, qualitative findings. The other articles identified were merely descriptions of social circuses. One website was identified on the use of the social circus to help youth who had been treated in a hospital setting for major psychiatric disorders to re-enter the community. The team in the pediatric psychiatry department at Centre Hospitalier Universitaire Sainte-Justine, the children’s hospital in Montreal, Que, was contacted; they were leading this project, called Espace Transition. The unpublished preliminary findings of its pilot project demonstrate substantial improvements in overall patient

  19. Sur la plurifonctionnalité du discours direct

    Directory of Open Access Journals (Sweden)

    Cigada Sara

    2012-07-01

    Full Text Available La comparaison entre les résultats de nombreux travaux sur le dialogue dans le texte littéraire, sur l’attestation linguistique de la subjectivité, sur la fonction argumentative des émotions dans le discours et sur les effets de polyphonie, suggère que la structure sémiotique et linguistique du discours direct (DD se trouve au croisement stratégique de plusieurs axes de la construction discursive. Nous étudions donc l’insertion du DD dans le discours (cf. Rosier 2008: Le discours rapporté en français; Kerbrat 2005: Le Discours en interaction et Id. 2008: Le Dialogue comme objet d’analyse linguistique; Maingueneau 2010: Manuel de linguistique pour le texte littéraire en tant que phénomène de rupture sémiotique (Genette 1972: Figures III et Id. 1983: Nouveau discours du récit, dans ses fonctions discursives plurielles, tantôt émotives (Tannen 1989: Talking Voices; Plantin-Traverso-Vosghanian 2008: Parcours des émotions en interaction, tantôt argumentatives (Doury 2001: La Fonction argumentative des échanges rapportés; Stati 1990: Le transphrastique. Du point de vue méthodologique, nous nous proposons de revisiter empiriquement, par l'étude de corpus, les traits linguistiques structuraux qui caractérisent l’insertion du DD dans un récit à l'écrit, en les comparant systématiquement aux traits de l’insertion du DD dans un récit à l'oral. Une analyse parallèle est possible en ce qui concerne les fonctions discursives, que le DD typiquement déroule dans les récits. Les fonctions du DD décrites à partir de l'étude des corpus sont plurielles: on reconnaît des fonctions fortement argumentatives d'autres plus typiquement narratives, tandis que d'autres encore amalgament les deux fonctions. Le « contrat de littéralité », qui selon Genette ne porterait jamais que sur la teneur du discours, doit donc être fortement nuancé selon les contextes, tandis que l'effet de sens le plus directement lié à la

  20. Tuberculose du col utérin simulant un cancer du col utérin : à propos ...

    African Journals Online (AJOL)

    Tuberculose du col utérin simulant un cancer du col utérin : à propos d'un cas, au Centre Hospitalier Universitaire Souro Sanou de Bobo-Dioulasso, Burkina Faso. A. Dembélé, V. Konségré, E. Birba, D.A. Somé, H. Zamané, A.S. Ouédraogo, S. Kiemtoré, S. Ouattara, A. Lamien-Sanou, M. Bambara, B. Bonané/Thiéba ...

  1. Intensification du recours à l'irrigation intermittente en riziculture afin ...

    International Development Research Centre (IDRC) Digital Library (Canada)

    Un nouveau projet de recherche vise à contribuer à la lutte contre le paludisme dans un bassin versant du nord du Pérou. Sur la côte du nord du Pérou, qui est fort aride, le paludisme est répandu en raison de l'irrigation abondante que nécessitent les rizières. La riziculture pratiquée dans cette région représente 60 % de la ...

  2. Politique de gestion de l'habitat du poisson du Ministère des pêches et des océans

    National Research Council Canada - National Science Library

    1986-01-01

    Le present document enonce la politique, les objectifs et les strategies du Ministere des Peches et des Oceans pour la gestion de l'habitat du poisson dont dependent les peches canadiennes en eaux douces et marines...

  3. Mask alignment system for semiconductor processing

    Science.gov (United States)

    Webb, Aaron P.; Carlson, Charles T.; Weaver, William T.; Grant, Christopher N.

    2017-02-14

    A mask alignment system for providing precise and repeatable alignment between ion implantation masks and workpieces. The system includes a mask frame having a plurality of ion implantation masks loosely connected thereto. The mask frame is provided with a plurality of frame alignment cavities, and each mask is provided with a plurality of mask alignment cavities. The system further includes a platen for holding workpieces. The platen may be provided with a plurality of mask alignment pins and frame alignment pins configured to engage the mask alignment cavities and frame alignment cavities, respectively. The mask frame can be lowered onto the platen, with the frame alignment cavities moving into registration with the frame alignment pins to provide rough alignment between the masks and workpieces. The mask alignment cavities are then moved into registration with the mask alignment pins, thereby shifting each individual mask into precise alignment with a respective workpiece.

  4. La géopolitique au risque du tourisme. 

    Directory of Open Access Journals (Sweden)

    Maie Gérardot

    2008-06-01

    Full Text Available La géopolitique du tourisme est dans l’air du temps. En témoigne la sortie, fin 2007, d’un numéro de la revue Hérodote consacré à cette question (recensé sur EspacesTemps.net — numéro auquel Jean-Michel Hoerner a d’ailleurs participé avec deux articles 1 , dont on retrouve le contenu dans son ouvrage Géopolitique du tourisme . Jean-Michel Hoerner, professeur de géopolitique et de tourisme, poursuit dans Géopolitique du tourisme , un travail de « reconnaissance ...

  5. Magic turtle dans le canton du Jura: concept marketing

    OpenAIRE

    Hauser, Magali; Perruchoud-Massy, Marie-Françoise

    2012-01-01

    Depuis juin 2009, Saint-Ursanne/Clos du Doubs est une région pilote du Projet Enjoy Switzerland/ASM ayant pour but d’intervenir sur le développement et la sensibilisation du tourisme dans la région. En parallèle, la Maison du Tourisme, entreprise proposant principalement des offres touristiques dans la région, a ouvert ses portes l’année dernière. Ces deux entités ont travaillé ensemble afin de développer une nouvelle offre touristique intitulée « Magic turtle ». Le Magic turtle, pensé par de...

  6. L’Harmonie du monde

    Directory of Open Access Journals (Sweden)

    Martine Clouzot

    2003-11-01

    Full Text Available La Bourgogne est particulièrement bien présente et représentée dans l’exposition sur la musique et ses représentations au Moyen Âge organisée par Isabelle Marchesin (université de Poitiers, Christine Laloue (conservatrice du Patrimoine au Musée et Martine Clouzot (université de Bourgogne, au Musée de la Musique à Paris du 26 mars au 27 juin 2004. En Côte-d’Or, à Dijon, la Bibliothèque municipale a donné son accord officiel pour le prêt de la Bible d’Etienne Harding, les Moralia in Job et u...

  7. Le renouveau des contes du Lagle Naaba à la Télévision Nationale ...

    African Journals Online (AJOL)

    hond

    2 juin 2007 ... extérieurs (films, jeux, sports, grands reportages, musique, etc.), en dépit de ... estimée à huit (8) millions de personnes qui, pour la majorité, continuent de garder ... peine d'attirer sur soi et sur les siens les pires calamités.

  8. Répercussions de la chute du mur de Berlin sur des conflits nationalistes : Pays Basque et Irlande du Nord

    Directory of Open Access Journals (Sweden)

    Pascal Pragnère

    2012-11-01

    Full Text Available La chute du mur de Berlin et l’effondrement des régimes communistes eurent pour effet de discréditer et affaiblir de nombreux mouvements révolutionnaires, et de provoquer l’émergence ou la résurgence de mouvements nationalistes.En 1989-90, deux conflits violents faisaient rage au cœur de l’Europe occidentale démocratique, en Irlande du Nord et au Pays Basque.Dans ces deux territoires, des nationalistes, dont certains étaient des radicaux animés par des revendications nationalistes et révolutionnaires s’opposèrent à des états démocratiques par l’utilisation de la violence. Un processus de paix se développa à partir de 1998 en Irlande du Nord ; celui du Pays Basque est toujours dans l’impasse.Il semble au premier abord que ces conflits continuèrent sans bouleversement majeur dans la période qui suivit la chute du mur.Cet article examine les revendications des nationalistes en Irlande du Nord et au Pays Basque pour tenter de dévoiler dans quelle mesure ils furent affectés par ce choc historique.Une perspective comparative permet de comprendre que ces mouvements furent influencés différemment en fonction des contextes locaux. Certains acteurs politiques restèrent volontairement imperméables, alors que d’autres furent davantage affectés par le débat idéologique.

  9. Analyse économique de la production artisanale du chakpalo au ...

    African Journals Online (AJOL)

    SARAH

    31 mars 2015 ... maltage de la céréale (sorgho, maïs et/ou le mélange du sorgho et du maïs), le brasage du malt .... trempage, la germination et le séchage. Les grains de sorgho sont vannés, triés et lavés à grande .... cours du chauffage afin d'éviter la calcination et l'incrustation des particules au fond de la marmite ; des.

  10. feature article la codification et le développement progressif du droit

    African Journals Online (AJOL)

    OLAWUYI

    de plein pied dans une nouvelle forme de conflit armé : les conflits intra étatiques ou ... politique économique et social quel qu'il soi dans un Etat, relèvent ... sociaux, économiques et politiques obtenus tout au long d'un tel processus. C'est là ... La Communauté Economique des Etats de l'Afrique de l'Ouest CEDEAO, à.

  11. MUON DETECTORS: ALIGNMENT

    CERN Multimedia

    M. Dallavalle

    2013-01-01

    A new Muon misalignment scenario for 2011 (7 TeV) Monte Carlo re-processing was re-leased. The scenario is based on running of standard track-based reference-target algorithm (exactly as in data) using single-muon simulated sample (with the transverse-momentum spectrum matching data). It used statistics similar to what was used for alignment with 2011 data, starting from an initially misaligned Muon geometry from uncertainties of hardware measurements and using the latest Tracker misalignment geometry. Validation of the scenario (with muons from Z decay and high-pT simulated muons) shows that it describes data well. The study of systematic uncertainties (dominant by now due to huge amount of data collected by CMS and used for muon alignment) is finalised. Realistic alignment position errors are being obtained from the estimated uncertainties and are expected to improve the muon reconstruction performance. Concerning the Hardware Alignment System, the upgrade of the Barrel Alignment is in progress. By now, d...

  12. MUON DETECTORS: ALIGNMENT

    CERN Multimedia

    G. Gomez

    2011-01-01

    A new set of muon alignment constants was approved in August. The relative position between muon chambers is essentially unchanged, indicating good detector stability. The main changes concern the global positioning of the barrel and of the endcap rings to match the new Tracker geometry. Detailed studies of the differences between track-based and optical alignment of DTs have proven to be a valuable tool for constraining Tracker alignment weak modes, and this information is now being used as part of the alignment procedure. In addition to the “split-cosmic” analysis used to investigate the muon momentum resolution at high momentum, a new procedure based on reconstructing the invariant mass of di-muons from boosted Zs is under development. Both procedures show an improvement in the momentum precision of Global Muons with respect to Tracker-only Muons. Recent developments in track-based alignment include a better treatment of the tails of residual distributions and accounting for correla...

  13. Strategie de repeuplement du mollusque gasteropode Concholepas concholepas (B) au sud du Chili

    OpenAIRE

    Varelasantibanez, C

    1992-01-01

    Une stratégie de repeuplement du "loco" Concholepas concholepas (B) est développée dans le sud du Chili à partir de résultats obtenus au laboratoire sur la reproduction et la croissance de ce mollusque. Les reproducteurs sont conservés au laboratoire pendant toute l'année et l'émission de capsules ovigères peut être provoquée au cours de toute cette période. Les capsules sont ensuite transférées dans le milieu naturel où a lieu l'éclosion. Par ailleurs, des juvéniles recrutés dans le milie...

  14. Influence du temps de conservation du sang sur l'hémogramme réalisé avec le Vet-ABC chez le chien et le chat

    OpenAIRE

    Caillard, Agnès

    2002-01-01

    L'utilisation du Vet abc, automate d'hématologie de type «coulter » a permis d'étudier les modifications engendrées par la conservation du sang pendant 24 heures à température ambiante, sur les paramètres et constituants de l'hémogramme du chien et du chat. L'évaluation de l'effet de la conservation du sang sur l'IDR et sur les courbes de distribution cellulaire, constitue l'originalité de ce travail. Les évolutions les plus notables ont été les suivantes : - un VGM qui augmente en moyenne de...

  15. Reducing beam shaper alignment complexity: diagnostic techniques for alignment and tuning

    Science.gov (United States)

    Lizotte, Todd E.

    2011-10-01

    Safe and efficient optical alignment is a critical requirement for industrial laser systems used in a high volume manufacturing environment. Of specific interest is the development of techniques to align beam shaping optics within a beam line; having the ability to instantly verify by a qualitative means that each element is in its proper position as the beam shaper module is being aligned. There is a need to reduce these types of alignment techniques down to a level where even a newbie to optical alignment will be able to complete the task. Couple this alignment need with the fact that most laser system manufacturers ship their products worldwide and the introduction of a new set of variables including cultural and language barriers, makes this a top priority for manufacturers. Tools and methodologies for alignment of complex optical systems need to be able to cross these barriers to ensure the highest degree of up time and reduce the cost of maintenance on the production floor. Customers worldwide, who purchase production laser equipment, understand that the majority of costs to a manufacturing facility is spent on system maintenance and is typically the largest single controllable expenditure in a production plant. This desire to reduce costs is driving the trend these days towards predictive and proactive, not reactive maintenance of laser based optical beam delivery systems [10]. With proper diagnostic tools, laser system developers can develop proactive approaches to reduce system down time, safe guard operational performance and reduce premature or catastrophic optics failures. Obviously analytical data will provide quantifiable performance standards which are more precise than qualitative standards, but each have a role in determining overall optical system performance [10]. This paper will discuss the use of film and fluorescent mirror devices as diagnostic tools for beam shaper module alignment off line or in-situ. The paper will also provide an overview

  16. Tidal alignment of galaxies

    Energy Technology Data Exchange (ETDEWEB)

    Blazek, Jonathan; Vlah, Zvonimir; Seljak, Uroš

    2015-08-01

    We develop an analytic model for galaxy intrinsic alignments (IA) based on the theory of tidal alignment. We calculate all relevant nonlinear corrections at one-loop order, including effects from nonlinear density evolution, galaxy biasing, and source density weighting. Contributions from density weighting are found to be particularly important and lead to bias dependence of the IA amplitude, even on large scales. This effect may be responsible for much of the luminosity dependence in IA observations. The increase in IA amplitude for more highly biased galaxies reflects their locations in regions with large tidal fields. We also consider the impact of smoothing the tidal field on halo scales. We compare the performance of this consistent nonlinear model in describing the observed alignment of luminous red galaxies with the linear model as well as the frequently used "nonlinear alignment model," finding a significant improvement on small and intermediate scales. We also show that the cross-correlation between density and IA (the "GI" term) can be effectively separated into source alignment and source clustering, and we accurately model the observed alignment down to the one-halo regime using the tidal field from the fully nonlinear halo-matter cross correlation. Inside the one-halo regime, the average alignment of galaxies with density tracers no longer follows the tidal alignment prediction, likely reflecting nonlinear processes that must be considered when modeling IA on these scales. Finally, we discuss tidal alignment in the context of cosmic shear measurements.

  17. La microflore des sols du vignoble de Touraine

    Directory of Open Access Journals (Sweden)

    Claude Cuinier

    1975-12-01

    Full Text Available L'étude microbiologique des sols du vignoble porte sur trois années. Les déterminations quantitatives des bactéries, champignons, actinomycètes et des groupes fonctionnels des cycles de l'azote, du carbone et du soufre sont effectuées au cours de trois périodes du cycle végétatif de la vigne. Des variations saisonnières et annuelles sont observées. La microflore des sols viticoles est comparée à celle d'autres sols. Elle est au moins aussi riche et se distingue par son caractère plus aérobie. De grands écarts dans la composition microbiologique sont apparus entre des sols viticoles différant par leurs caractéristiques physiques et chimiques.

  18. Fast global sequence alignment technique

    KAUST Repository

    Bonny, Mohamed Talal; Salama, Khaled N.

    2011-01-01

    fast alignment algorithm, called 'Alignment By Scanning' (ABS), to provide an approximate alignment of two DNA sequences. We compare our algorithm with the wellknown sequence alignment algorithms, the 'GAP' (which is heuristic) and the 'Needleman

  19. GRANDE VENTE DE NOEL - MAGASIN DU MONDE MEYRIN - French version only

    CERN Multimedia

    Groupe Magasin du Monde Meyrin

    2002-01-01

    Mercredi 4 décembre de 10h. à 14h.30 Bâtiment principal, devant le restaurant no1 Vous y trouverez des produits alimentaires tels que miel, café, chocolat, sucre, quinoa, épices, etc, bref un riche assortiment des produits du commerce équitable porteurs du label Max Havelaar garantissant un meilleur revenu aux producteurs du Tiers Monde. Egalement à votre disposition des produits de l'artisanat des quatre coins du monde et des idées de cadeaux pour Noël. Groupe Magasin du Monde Meyrin

  20. Biennial-Aligned Lunisolar-Forcing of ENSO: Implications for Simplified Climate Models

    Science.gov (United States)

    Pukite, P. R.

    2017-12-01

    By solving Laplace's tidal equations along the equatorial Pacific thermocline, assuming a delayed-differential effective gravity forcing due to a combined lunar+solar (lunisolar) stimulus, we are able to precisely match ENSO periodic variations over wide intervals. The underlying pattern is difficult to decode by conventional means such as spectral analysis, which is why it has remained hidden for so long, despite the excellent agreement in the time-domain. What occurs is that a non-linear seasonal modulation with monthly and fortnightly lunar impulses along with a biennially-aligned "see-saw" is enough to cause a physical aliasing and thus multiple folding in the frequency spectrum. So, instead of a conventional spectral tidal decomposition, we opted for a time-domain cross-validating approach to calibrate the amplitude and phasing of the lunisolar cycles. As the lunar forcing consists of three fundamental periods (draconic, anomalistic, synodic), we used the measured Earth's length-of-day (LOD) decomposed and resolved at a monthly time-scale [1] to align the amplitude and phase precisely. Even slight variations from the known values of the long-period tides will degrade the fit, so a high-resolution calibration is possible. Moreover, a narrow training segment from 1880-1920 using NINO34/SOI data is adequate to extrapolate the cycles of the past 100 years (see attached figure). To further understand the biennial impact of a yearly differential-delay, we were able to also decompose using difference equations the historical sea-level-height readings at Sydney harbor to clearly expose the ENSO behavior. Finally, the ENSO lunisolar model was validated by back-extrapolating to Unified ENSO coral proxy (UEP) records dating to 1650. The quasi-biennial oscillation (QBO) behavior of equatorial stratospheric winds derives following a similar pattern to ENSO via the tidal equations, but with an emphasis on draconic forcing. This improvement in ENSO and QBO understanding has

  1. La violence dans les services sociaux: situation dans les services d'aide contrainte du canton du Jura

    OpenAIRE

    Durand, Loriane; Favre, Eliane

    2017-01-01

    Mon Travail de Bachelor a pour but premier de prendre connaissance de la situation de la violence dans les services d’aide contrainte du canton du Jura. La violence est-elle une réalité ? De quels types de violence s’agit-il ? Pourquoi cette violence, quelles en sont les raisons ? Cette violence augmente-t-elle le stress dans la profession d’assistant social ?

  2. Effets de la microdose sur la production du niébé, du mil et du ...

    African Journals Online (AJOL)

    respectivement pour le sorgho, le mil et le niébé comparativement au témoin. La microdose a été .... Les prix utilisés sont celui du marché local au moment des semis pour les engrais soit 17500 FCFA pour NPK et ..... Projet « Transfert de la.

  3. Analysis of the rectangular resonator with butterfly MMI coupler using SOI

    Science.gov (United States)

    Kim, Sun-Ho; Park, Jun-Hee; Kim, Eudum; Jeon, Su-Jin; Kim, Ji-Hoon; Choi, Young-Wan

    2018-02-01

    We propose a rectangular resonator sensor structure with butterfly MMI coupler using SOI. It consists of the rectangular resonator, total internal reflection (TIR) mirror, and the butterfly MMI coupler. The rectangular resonator is expected to be used as bio and chemical sensors because of the advantages of using MMI coupler and the absence of bending loss unlike ring resonators. The butterfly MMI coupler can miniaturize the device compared to conventional MMI by using a linear butterfly shape instead of a square in the MMI part. The width, height, and slab height of the rib type waveguide are designed to be 1.5 μm, 1.5 μm, and 0.9 μm, respectively. This structure is designed as a single mode. When designing a TIR mirror, we considered the Goos-Hänchen shift and critical angle. We designed 3:1 MMI coupler because rectangular resonator has no bending loss. The width of MMI is designed to be 4.5 μm and we optimize the length of the butterfly MMI coupler using finite-difference time-domain (FDTD) method for higher Q-factor. It has the equal performance with conventional MMI even though the length is reduced by 1/3. As a result of the simulation, Qfactor of rectangular resonator can be obtained as 7381.

  4. Incidence du cancer au Canada : tendances et projections (1983-2032

    Directory of Open Access Journals (Sweden)

    Lin Xie

    2015-01-01

    Full Text Available Dans cette monographie, nous présentons, pour 1983 à 2032, un historique et des projections du nombre de nouveaux cas et des taux d'incidence du cancer pour le Canada, à l'exception des cancers de la peau autres que le mélanome (c.-à -d. les carcinomes basocellulaire et spinocellulaire. Ces renseignements visent à faciliter la planification stratégique et l'affectation de ressources et d'infrastructures pour assurer la prestation future de soins de santé et de mesures de lutte contre le cancer. Évolution projetée des taux d'incidence de cancer : De 2003-2007 à 2028-2032, les taux d'incidence normalisés selon l'âge (TINA pour l'ensemble des cancers devraient diminuer de 5 % pour les Canadiens, passant de 464,8 à 443,2 pour 100 000 habitants, et augmenter de 4 % pour les Canadiennes, passant de 358,3 à 371,0 pour 100 000 habitants. La diminution globale des taux de cancer chez les hommes sera le résultat de la baisse des taux de cancer du poumon chez les hommes de 65 ans et plus et des taux de cancer de la prostate chez les hommes de 75 ans et plus. L'augmentation globale des taux de cancer chez les femmes correspond à la hausse prévue des taux de cancer du poumon chez les femmes de 65 ans et plus. Elle représente également la hausse prévue des cas de cancer de l'utérus, de la thyroïde, du sein (chez les femmes de moins de 45 ans, du rein et du pancréas ainsi que des cas de leucémie et de mélanome. Parmi les changements les plus importants dans les TINA projetés sur un horizon de 25 ans, mentionnons une augmentation du nombre de cas de cancer de la thyroïde (55 % chez les hommes et 65 % chez les femmes et de cancer du foie chez les hommes (43 %, et une diminution du nombre de cas de cancer du larynx (47 % chez les hommes et 59 % chez les femmes, de cancer du poumon chez les hommes (34 % et de cancer de l'estomac (30 % chez les hommes et 24 % chez les femmes. Le taux d'incidence du cancer du poumon chez les femmes

  5. Entre le néolibéralisme et la morale, la conception musulmane du développement en Turquie

    Directory of Open Access Journals (Sweden)

    Levent Ünsaldi

    2013-03-01

    Full Text Available Malgré ses crises et ses remises en cause, le modèle de développement fondé sur la centralité de la norme marchande semble préserver son hégémonie planétaire, éclipsant d’autant les modèles de développement « hérétiques ». On assiste alors à un recentrage des pratiques discursives et des catégories analytiques sur ce qui est pensable et dicible du point de vue de cette norme marchande. C’est le cas d’un certain islam politique en Turquie, qui s’est remarquablement « adouci » après s’être rangé sous sa bannière uniformisatrice. Cet article propose de cerner de façon empirique l’alignement de l’islam politique en Turquie sur l’approche néolibérale du développement. Du point de vue de l’islam modéré, le développement est synonyme d’entrée progressive dans l’ère de la modernité marchande, revueà l’aune de quelques impératifs moraux. L’article décrypte la valorisation d’un modèle social fondé sur la charité et pointe les nombreuses contradictions entre le développement économique et le développement moral, notamment celui défendu par le parti de l’islam modéré AKP.

  6. 98 Etude Comparative du Systeme Phonematique et Tonal des ...

    African Journals Online (AJOL)

    98. Etude Comparative du Systeme Phonematique et Tonal des. Deux Parlers: Le Yoruba du Nigeria et L'itsa Parle en. Republique du Benin. Ajani Akinwumi Lateef et Ayuba G. Ajibabi http://dx.doi./org/10.4314/ujah.v18i3.5. Résume. En ce début de l'époque ou la mondialisation et la coexistence des peuples dans le ...

  7. Carcinome du tube collecteur de Bellini: une nouvelle observation ...

    African Journals Online (AJOL)

    Le carcinome du tube collecteur de Bellini est un type très rare des carcinomes à cellules rénales (CCR), sa fréquence est inférieure à 1%. Il dérive de la partie distale du néphron, plus précisément du tube collecteur. Ses aspects morphologiques sont extrêmement variables, rendant son diagnostic difficile. Nous rapportons ...

  8. Le vide univers du tout et du rien

    CERN Document Server

    Diner, Simon

    1997-01-01

    Pourquoi l'Univers plutôt que le vide ? Le temps et l'espace existent-ils en l'absence de l'Univers ? Que reste-t-il quand tout est enlevé ? Pourquoi quelque chose plutôt que rien ? Depuis des siècles, ces interrogations mobilisent philosophes et physiciens. Mais aujourd'hui, le vide n'est pas le rien. Il serait même l'acteur central de l'histoire de la matière et de l'Univers, le partenaire privilégié de la physique. Vide et matière ne sont plus deux manifestations séparées de la nature, mais deux aspects d'une même réalité. Le vide est l'état de base dont la matière émerge, sans couper son cordon ombilical Le vide comme Univers du rien cède la place au vide comme Univers du tout. Que le vide puisse être conçu par les physiciens comme réservoir potentiel d'univers, voici qui ne devrait laisser personne indifférent. Ce livre ouvre un débat et nous convie à une réflexion surprenante.

  9. Ultra-low power high temperature and radiation hard complementary metal-oxide-semiconductor (CMOS) silicon-on-insulator (SOI) voltage reference.

    Science.gov (United States)

    Boufouss, El Hafed; Francis, Laurent A; Kilchytska, Valeriya; Gérard, Pierre; Simon, Pascal; Flandre, Denis

    2013-12-13

    This paper presents an ultra-low power CMOS voltage reference circuit which is robust under biomedical extreme conditions, such as high temperature and high total ionized dose (TID) radiation. To achieve such performances, the voltage reference is designed in a suitable 130 nm Silicon-on-Insulator (SOI) industrial technology and is optimized to work in the subthreshold regime of the transistors. The design simulations have been performed over the temperature range of -40-200 °C and for different process corners. Robustness to radiation was simulated using custom model parameters including TID effects, such as mobilities and threshold voltages degradation. The proposed circuit has been tested up to high total radiation dose, i.e., 1 Mrad (Si) performed at three different temperatures (room temperature, 100 °C and 200 °C). The maximum drift of the reference voltage V(REF) depends on the considered temperature and on radiation dose; however, it remains lower than 10% of the mean value of 1.5 V. The typical power dissipation at 2.5 V supply voltage is about 20 μW at room temperature and only 75 μW at a high temperature of 200 °C. To understand the effects caused by the combination of high total ionizing dose and temperature on such voltage reference, the threshold voltages of the used SOI MOSFETs were extracted under different conditions. The evolution of V(REF) and power consumption with temperature and radiation dose can then be explained in terms of the different balance between fixed oxide charge and interface states build-up. The total occupied area including pad-ring is less than 0.09 mm2.

  10. Ėtude sur l’alimentation du poulet de chaire à base du maïs Zenata et Ain kebira

    OpenAIRE

    KENZI, MOHAMMED ZAKARYA; WAHAJ, MOHAMMED

    2016-01-01

    Résume L’aliment représente 70% du cout de production dans l’élevage de poulet de chair, il est donc important d’accorder une attention particulière à ce paramètre. Ce dernier est le premier poste intervenant dans le prix de revient du poulet de chair. La supplémentation de l’aliment du poulet en 2 5% de maïs durant le démarrage et croissance permet aussi de réduire le cout d’élevage et d’améliorer le poids a l’abattage. Study chair of chicken feed made of corn Summ...

  11. les cahiers du cread: About this journal

    African Journals Online (AJOL)

    les cahiers du cread: About this journal. Journal Home > les cahiers du cread: About this journal. Log in or Register to get access to full text downloads. Username, Password, Remember me, or Register · Journal Home · ABOUT THIS JOURNAL · Advanced Search · Current Issue · Archives. People. » Contact. Policies.

  12. L’Association du personnel, le TREF, le Comité des Finances et le Conseil du CERN

    CERN Multimedia

    Staff Association

    2016-01-01

    L’Association du personnel, forte de son approche participative et consensuelle, recherche toujours le meilleur accord possible pour l’Organisation et son personnel. Pour ce faire, discussions et concertation avec la Direction, travail d’explication et de persuasion au TREF et ailleurs auprès des délégués des États membres sont nos principaux atouts. TREF (Tripartite Employment Conditions Forum), un Forum d’échanges, de discussions « L’objectif du Forum est d’améliorer le processus de prise de décision  en donnant aux personnes concernées la possibilité et le temps de comprendre pleinement la position de tous les participants. » (CERN/RTG/8) Le Forum tripartite sur les conditions d’emploi (TREF), créé par le Conseil du CERN en juin 1994, est composé de r...

  13. Line-edge roughness induced single event transient variation in SOI FinFETs

    International Nuclear Information System (INIS)

    Wu Weikang; An Xia; Jiang Xiaobo; Chen Yehua; Liu Jingjing; Zhang Xing; Huang Ru

    2015-01-01

    The impact of process induced variation on the response of SOI FinFET to heavy ion irradiation is studied through 3-D TCAD simulation for the first time. When FinFET biased at OFF state configuration (V gs = 0, V ds = V dd ) is struck by a heavy ion, the drain collects ionizing charges under the electric field and a current pulse (single event transient, SET) is consequently formed. The results reveal that with the presence of line-edge roughness (LER), which is one of the major variation sources in nano-scale FinFETs, the device-to-device variation in terms of SET is observed. In this study, three types of LER are considered: type A has symmetric fin edges, type B has irrelevant fin edges and type C has parallel fin edges. The results show that type A devices have the largest SET variation while type C devices have the smallest variation. Further, the impact of the two main LER parameters, correlation length and root mean square amplitude, on SET variation is discussed as well. The results indicate that variation may be a concern in radiation effects with the down scaling of feature size. (paper)

  14. High temperature piezoresistive {beta}-SiC-on-SOI pressure sensor for combustion engines

    Energy Technology Data Exchange (ETDEWEB)

    Berg, J. von; Ziermann, R.; Reichert, W.; Obermeier, E. [Tech. Univ. Berlin (Germany). Microsensor and Actuator Technol. Center; Eickhoff, M.; Kroetz, G. [Daimler Benz AG, Munich (Germany); Thoma, U.; Boltshauser, T.; Cavalloni, C. [Kistler Instrumente AG, Winterthur (Switzerland); Nendza, J.P. [TRW Deutschland GmbH, Barsinghausen (Germany)

    1998-08-01

    For measuring the cylinder pressure in combustion engines of automobiles a high temperature pressure sensor has been developed. The sensor is made of a membrane based piezoresistive {beta}-SiC-on-SOI (SiCOI) sensor chip and a specially designed housing. The SiCOI sensor was characterized under static pressures of up to 200 bar in the temperature range between room temperature and 300 C. The sensitivity of the sensor at room temperature is approximately 0.19 mV/bar and decreases to about 0.12 mV/bar at 300 C. For monitoring the dynamic cylinder pressure the sensor was placed into the combustion chamber of a gasoline engine. The measurements were performed at 1500 rpm under different loads, and for comparison a quartz pressure transducer from Kistler AG was used as a reference. The maximum pressure at partial load operation amounts to about 15 bar. The difference between the calibrated SiCOI sensor and the reference sensor is significantly less than 1 bar during the whole operation. (orig.) 8 refs.

  15. Ancestral sequence alignment under optimal conditions

    Directory of Open Access Journals (Sweden)

    Brown Daniel G

    2005-11-01

    Full Text Available Abstract Background Multiple genome alignment is an important problem in bioinformatics. An important subproblem used by many multiple alignment approaches is that of aligning two multiple alignments. Many popular alignment algorithms for DNA use the sum-of-pairs heuristic, where the score of a multiple alignment is the sum of its induced pairwise alignment scores. However, the biological meaning of the sum-of-pairs of pairs heuristic is not obvious. Additionally, many algorithms based on the sum-of-pairs heuristic are complicated and slow, compared to pairwise alignment algorithms. An alternative approach to aligning alignments is to first infer ancestral sequences for each alignment, and then align the two ancestral sequences. In addition to being fast, this method has a clear biological basis that takes into account the evolution implied by an underlying phylogenetic tree. In this study we explore the accuracy of aligning alignments by ancestral sequence alignment. We examine the use of both maximum likelihood and parsimony to infer ancestral sequences. Additionally, we investigate the effect on accuracy of allowing ambiguity in our ancestral sequences. Results We use synthetic sequence data that we generate by simulating evolution on a phylogenetic tree. We use two different types of phylogenetic trees: trees with a period of rapid growth followed by a period of slow growth, and trees with a period of slow growth followed by a period of rapid growth. We examine the alignment accuracy of four ancestral sequence reconstruction and alignment methods: parsimony, maximum likelihood, ambiguous parsimony, and ambiguous maximum likelihood. Additionally, we compare against the alignment accuracy of two sum-of-pairs algorithms: ClustalW and the heuristic of Ma, Zhang, and Wang. Conclusion We find that allowing ambiguity in ancestral sequences does not lead to better multiple alignments. Regardless of whether we use parsimony or maximum likelihood, the

  16. Naked, Deformed, Violated Body. A Montage in the Histoire(s du cinema of Jean-Luc Godard

    Directory of Open Access Journals (Sweden)

    Alberto Brodesco

    2013-07-01

    Full Text Available The article analyses Histoire(s du cinéma (1988-1998, a cinematic essay by Jean-Luc Godard, and in particular it focuses on the controversial montage in which the French director aligns extracts from a pornographic film, Tod Browning’s Freaks, and footage from the concentration camps. With this sequence Godard inquires his own theory of montage: the idea of a productive reconciliation between opposing realities. This shocking sequence (the violence of images is compared to a similar shock (the violence of asking to witness produced by a scene of the documentary Shoah by Claude Lanzmann. The trauma of Godard’s editing choice induces the viewer to examine the issues of the degradation of the indexical status of the film, the limits of representation and the ethics of the gaze.

  17. Spécificités du sous-titrage pour enfants malentendants

    OpenAIRE

    Comitre-Narvaez, Isabel

    2016-01-01

    Ce travail aborde la spécificité multisémiotique du texte audiovisuel qui est à l’origine de nombreux défis que le traducteur audiovisuel doit relever. Il explore les rapports intersémiotiques qui s’établissent entre le code verbal et le code visuel et se concentre sur les particularités du sous-titrage pour sourds et malentendants dans la “compensation” du déficit auditif, essentiellement son rapport spécifique à l’image. À cet égard, Gottlieb signale que le succès du sous-titrage dépend du ...

  18. Incorporation du coprah et des cuticules de cacao et d'arachide ...

    African Journals Online (AJOL)

    Incorporation du coprah et des cuticules de cacao et d'arachide dans l'aliment du ( tilapia du nil( ( Oreohromis niloticus , linné, 1758) eleve en etang : Effet sur la croissance et la composition biochimique.

  19. Histoire et sociétés du Vietnam classique

    OpenAIRE

    Papin, Philippe

    2012-01-01

    Programme de l’année 2008-2009 : I. Histoire rurale de la propriété foncière au Vietnam du XVIe au XVIIIe siècle. — II. Étude des sources de l’histoire villageoise du bassin du fleuve Rouge à l’époque moderne.

  20. Directeur, Gestion du risque et audit interne | CRDI - Centre de ...

    International Development Research Centre (IDRC) Digital Library (Canada)

    Résumé des fonctions En qualité de dirigeant principal de l'audit (DPA), ... président du Centre et au président du Comité des finances et de l'audit une assurance et des ... Il fournit des services de gestion du risque organisationnel et d'autres ...

  1. La mesure du danger

    CERN Document Server

    Manceron, Vanessa; Revet, Sandrine

    2014-01-01

    La mesure du danger permet d’explorer des dangers de nature aussi diverse que la délinquance, la pollution, l’écueil maritime, la maladie ou l’attaque sorcellaire, l’extinction d’espèces animales ou végétales, voire de la Planète tout entière. Au croisement de la sociologie, de l’anthropologie et de l’histoire, les différents articles analysent les pratiques concrètes de mesure pour tenter de comprendre ce qui se produit au cours de l’opération d’évaluation du danger sans préjuger de la nature de celui-ci. L’anthropologie a contribué à la réflexion sur l’infortune en s’intéressant aux temporalités de l’après : maladies, catastrophes, pandémies, etc. et en cherchant à rendre compte de l’expérience des victimes, de leur vie ordinaire bouleversée, de la recomposition du quotidien. Elle s’intéresse aussi aux autres types de mesures, les savoirs incorporés, qui reposent sur l’odorat, la vue ou le toucher et ceux qui ressortent d’une épistémologie « non ...

  2. Clear aligners in orthodontic treatment.

    Science.gov (United States)

    Weir, T

    2017-03-01

    Since the introduction of the Tooth Positioner (TP Orthodontics) in 1944, removable appliances analogous to clear aligners have been employed for mild to moderate orthodontic tooth movements. Clear aligner therapy has been a part of orthodontic practice for decades, but has, particularly since the introduction of Invisalign appliances (Align Technology) in 1998, become an increasingly common addition to the orthodontic armamentarium. An internet search reveals at least 27 different clear aligner products currently on offer for orthodontic treatment. The present paper will highlight the increasing popularity of clear aligner appliances, as well as the clinical scope and the limitations of aligner therapy in general. Further, the paper will outline the differences between the various types of clear aligner products currently available. © 2017 Australian Dental Association.

  3. Investigation of the stability of polysilicon layers in SOI-structures under irradiation by electrons and hard magnetic field influence

    Directory of Open Access Journals (Sweden)

    Khoverko Yu. N.

    2010-10-01

    Full Text Available The properties of recrystallized polysilicon on insulator layers of p-type conductive SOI-structures with different carrier concentration irradiated with high-energy electrons flow about 1017 сm–2 in temperature range 4,2—300 К and high magnetic fields were investigated. It was found that heavily doped laser recrystallized polysilicon on insulator layers show its radiation resistance under irradiation with high-energy electrons and magnetoresistance of such material remains quite low in magnetic field about 14 T does not exceed 1—2%. Such qulity can be applied in designing of microelectronic sensors of mechanical values operable in hard conditions of exploitation.

  4. Proudhon, science ou métaphysique du travail

    OpenAIRE

    Lecerf , Eric

    2008-01-01

    La philosophie de Proudhon, même si elle trouve son concept essentiel dans la justice, est intégralement une philosophie du travail, non pas que le travail en constitue l'objet unique, mais car c'est en lui que les tensions du réel sont concrètement identifiables. C'est dans sa critique que l'agir humain se donne comme émancipation et/ou aliénation, autrement dit que la dialectique acquiert toute sa justification. La philosophie du travail de Proudhon donnera lieu à deux lectures opposées : c...

  5. Une étude du pluralisme architectural: l'indicateur des métamorphoses du quartier Mariscal Sucre à Quito

    Directory of Open Access Journals (Sweden)

    Marie S. BOCK

    1993-06-01

    Full Text Available L’étude de la carte du pluralisme architectural du quartier Mariscal Sucre à Quito, élaborée à partir d’une matrice de Bertin, permet de mettre en valeur une dichotomie chronologique et fonctionnelle et de dégager des profils architecturaux soulignant les différentes étapes de constitution et d’évolution de ce secteur.

  6. MUON DETECTORS: ALIGNMENT

    CERN Multimedia

    Gervasio Gomez

    2012-01-01

      The new alignment for the DT chambers has been successfully used in physics analysis starting with the 52X Global Tag. The remaining main areas of development over the next few months will be preparing a new track-based CSC alignment and producing realistic APEs (alignment position errors) and MC misalignment scenarios to match the latest muon alignment constants. Work on these items has been delayed from the intended timeline, mostly due to a large involvement of the muon alignment man-power in physics analyses over the first half of this year. As CMS keeps probing higher and higher energies, special attention must be paid to the reconstruction of very-high-energy muons. Recent muon POG reports from mid-June show a φ-dependence in curvature bias in Monte Carlo samples. This bias is observed already at the tracker level, where it is constant with muon pT, while it grows with pT as muon chamber information is added to the tracks. Similar studies show a much smaller effect in data, at le...

  7. MUON DETECTORS: ALIGNMENT

    CERN Multimedia

    G. Gomez

    2010-01-01

    For the last three months, the Muon Alignment group has focussed on providing a new, improved set of alignment constants for the end-of-year data reprocessing. These constants were delivered on time and approved by the CMS physics validation team on November 17. The new alignment incorporates several improvements over the previous one from March for nearly all sub-systems. Motivated by the loss of information from a hardware failure in May (an entire MAB was lost), the optical barrel alignment has moved from a modular, super-plane reconstruction, to a full, single loop calculation of the entire geometry for all DTs in stations 1, 2 and 3. This makes better use of the system redundancy, mitigating the effect of the information loss. Station 4 is factorised and added afterwards to make the system smaller (and therefore faster to run), and also because the MAB calibration at the MB4 zone is less precise. This new alignment procedure was tested at 0 T against photogrammetry resulting in precisions of the order...

  8. Entrepreneur innovateur du troisième millénaire

    OpenAIRE

    Nathalie Mudard-Franssen

    2000-01-01

    A notre époque, charnière d'un nouveau siècle, il me semble pertinent de s'interroger sur la légitimité du rôle de l'entrepreneur innovateur du troisième millénaire. C'est pourquoi, à partir des débats au sein du D.E.S.S. « Entrepreneuriat et Redéploiement Industriel » de l'Université du Littoral Côte d'Opale de Dunkerque de l'année universitaire 1999-2000, j'ai recueilli 7 contributions et réalisé ce document de travail afin de présenter l'entrepreneur innovateur sous plusieurs angles. Ce do...

  9. Progrès de la connaissance du Congo, du Rwanda et du Burundi de 1993 à 2008

    Directory of Open Access Journals (Sweden)

    Henri Nicolaï

    2013-03-01

    Full Text Available Cette chronique, la vingt et unième d’une série qui a commencé avec l’année 1949, couvre la période 1993-2008 et a pour objectif de faire le point sur les progrès réalisés sur la connaissance du Congo (République démocratique du Congo, du Rwanda et du Burundi, dans le domaine de la géographie mais aussi dans les domaines des sciences naturelles et des sciences humaines qui peuvent fournir des données utiles ou indispensables aux géographes. Chaque référence bibliographique, livre ou article, est accompagnée d’un bref commentaire qui en retient les éléments principaux et surtout les faits ou les idées qui intéressent particulièrement les géographes. L’article comporte onze chapitres dont les plus importants concernent le milieu naturel, la géographie de la santé, la démographie, l’histoire (y compris l’histoire récente, la vie sociale et économique des campagnes traditionnelles et modernes, le secteur informel, les aspects de la vie urbaine. Les événements dramatiques qui se sont produits dans ces territoires africains au cours des quinze dernières années ont rendu la recherche sur le terrain particulièrement difficile tant pour les chercheurs nationaux que pour les chercheurs étrangers, ce qui se traduit notamment par une part de plus en plus importante des recherches menées en milieu urbain.This paper, the 21st issue of an edition of books and paper reviews on the knowledge of three countries of former Belgian Africa (DR Congo, Rwanda, and Burundi, covers the period 1993-2008. A short text for each reference points out the facts or ideas that are useful for geographers. The paper is composed of eleven sections. The most important are coping with the natural environment, health geography, population geography, history (including recent events, social and economic life in traditional and modern rural areas, informal economy, and urban geography. During the last sixteen years, conditions for field

  10. Case Report - Le syndrome de Cri du Chat : A propos d'une ...

    African Journals Online (AJOL)

    Le syndrome du Cri du Chat (Cri du Chat syndrome, CdCS) est une anomalie chromosomique résultant d'une délétion de taille variable de l'extrémité du bras court du chromosome 5 (5p), incluant une région critique située en p15.2. Il représente une des délétions chromosomiques les plus fréquentes, son incidence dans ...

  11. Sud du Sahara | Page 9 | CRDI - Centre de recherches pour le ...

    International Development Research Centre (IDRC) Digital Library (Canada)

    Un nouveau projet de recherche sur la prévention du VIH a conduit à la réalisation d'un essai national novateur de prévention du VIH au Botswana. Read more about Des résultats de recherche mènent à la réalisation d'essais de prévention du VIH dans l'ensemble du Botswana. Langue French. New research into HIV ...

  12. Couzeix – Les Terres du Puy Dieu

    OpenAIRE

    Maniquet, Christophe

    2013-01-01

    Identifiant de l'opération archéologique : 122281 Date de l'opération : 2005 (EX) Dans le cadre du projet de construction d'un lotissement constitué de trois pavillons au lieu-dit « Les Terres du Puy Dieu », un diagnostic archéologique a été prescrit par le service régional de l'Archéologie. En effet, plusieurs sites archéologiques avaient été inventoriés à proximité immédiate de la zone d'intervention. On notera, en particulier, la découverte en 1982, près du Puy Dieu, au cours de travaux de...

  13. How accurate is anatomic limb alignment in predicting mechanical limb alignment after total knee arthroplasty?

    Science.gov (United States)

    Lee, Seung Ah; Choi, Sang-Hee; Chang, Moon Jong

    2015-10-27

    Anatomic limb alignment often differs from mechanical limb alignment after total knee arthroplasty (TKA). We sought to assess the accuracy, specificity, and sensitivity for each of three commonly used ranges for anatomic limb alignment (3-9°, 5-10° and 2-10°) in predicting an acceptable range (neutral ± 3°) for mechanical limb alignment after TKA. We also assessed whether the accuracy of anatomic limb alignment was affected by anatomic variation. This retrospective study included 314 primary TKAs. The alignment of the limb was measured with both anatomic and mechanical methods of measurement. We also measured anatomic variation, including the femoral bowing angle, tibial bowing angle, and neck-shaft angle of the femur. All angles were measured on the same full-length standing anteroposterior radiographs. The accuracy, specificity, and sensitivity for each range of anatomic limb alignment were calculated and compared using mechanical limb alignment as the reference standard. The associations between the accuracy of anatomic limb alignment and anatomic variation were also determined. The range of 2-10° for anatomic limb alignment showed the highest accuracy, but it was only 73 % (3-9°, 65 %; 5-10°, 67 %). The specificity of the 2-10° range was 81 %, which was higher than that of the other ranges (3-9°, 69 %; 5-10°, 67 %). However, the sensitivity of the 2-10° range to predict varus malalignment was only 16 % (3-9°, 35 %; 5-10°, 68 %). In addition, the sensitivity of the 2-10° range to predict valgus malalignment was only 43 % (3-9°, 71 %; 5-10°, 43 %). The accuracy of anatomical limb alignment was lower for knees with greater femoral (odds ratio = 1.2) and tibial (odds ratio = 1.2) bowing. Anatomic limb alignment did not accurately predict mechanical limb alignment after TKA, and its accuracy was affected by anatomic variation. Thus, alignment after TKA should be assessed by measuring mechanical alignment rather than anatomic

  14. Strategic Alignment and New Product Development

    DEFF Research Database (Denmark)

    Acur, Nuran; Kandemir, Destan; Boer, Harry

    2012-01-01

    Strategic alignment is widely accepted as a prerequisite for a firm’s success, but insight into the role of alignment in, and its impact on, the new product evelopment (NPD) process and its performance is less well developed. Most publications on this topic either focus on one form of alignment...... of NPD performance indicators. Strategic planning and innovativeness appear to affect technological, market, and NPD-marketing alignment positively. Environmental munificence is negatively associated with NPD-marketing alignment, but has no effect on the two other forms of alignment. Technological change...... has a positive effect on technological alignment, a negative effect on NPD-marketing alignment, but no effect on market alignment. These findings suggest that internal capabilities are more likely to be associated with the development of strategic alignment than environmental factors are. Furthermore...

  15. Single halo SDODEL n-MOSFET: an alternative low-cost pseudo-SOI with better analog performance

    Science.gov (United States)

    Sarkar, Partha; Mallik, Abhijit; Sarkar, Chandan Kumar

    2009-03-01

    In this paper, with the help of extensive TCAD simulations, we investigate the analog performance of source/drain on depletion layer (SDODEL) MOSFETs with a single-halo (SH) implant near the source side of the channel. We use the SH implant in such a structure for the first time. The analog performance parameters in SH SDODEL MOSFETs are compared to those in SH MOSFETs as well as in SH SOI MOSFETs. In addition to reduced junction capacitance for the SH SDODEL structure as compared to that in bulk SH devices, it has been shown that such devices lead to improved performance and lower power dissipation for sub-100 nm CMOS technologies. Our results show that, in SH SDODEL MOSFETs, there is significant improvement in the intrinsic device performance for analog applications (such as device gain, gm/ID, etc) for the sub-100 nm technologies.

  16. Single halo SDODEL n-MOSFET: an alternative low-cost pseudo-SOI with better analog performance

    International Nuclear Information System (INIS)

    Sarkar, Partha; Mallik, Abhijit; Sarkar, Chandan Kumar

    2009-01-01

    In this paper, with the help of extensive TCAD simulations, we investigate the analog performance of source/drain on depletion layer (SDODEL) MOSFETs with a single-halo (SH) implant near the source side of the channel. We use the SH implant in such a structure for the first time. The analog performance parameters in SH SDODEL MOSFETs are compared to those in SH MOSFETs as well as in SH SOI MOSFETs. In addition to reduced junction capacitance for the SH SDODEL structure as compared to that in bulk SH devices, it has been shown that such devices lead to improved performance and lower power dissipation for sub-100 nm CMOS technologies. Our results show that, in SH SDODEL MOSFETs, there is significant improvement in the intrinsic device performance for analog applications (such as device gain, g m /I D , etc) for the sub-100 nm technologies

  17. The biokinetics of uranium migrating from embedded DU fragments

    International Nuclear Information System (INIS)

    Leggett, R.W.; Pellmar, T.C.

    2003-01-01

    Military uses of depleted uranium (DU) munitions have resulted in casualties with embedded DU fragments. Assessment of radiological or chemical health risks from these fragments requires a model relating urinary U to the rate of migration of U from the fragments, and its accumulation in systemic tissues. A detailed biokinetic model for U has been published by the International Commission on Radiological Protection (ICRP), but its applicability to U migrating from embedded DU fragments is uncertain. Recently, ) conducted a study at the Armed Forces Radiobiology Research Institute (AFRRI) on the redistribution and toxicology of U in rats with implanted DU pellets, simulating embedded fragments. This paper compares the biokinetic data from that study with the behavior of commonly studied forms of U in rats (e.g., intravenously injected U nitrate). The comparisons indicate that the biokinetics of U migrating from embedded DU is similar to that of commonly studied forms of U with regard to long-term accumulation in kidneys, bone, and liver. The results provide limited support for the application of the ICRP's model to persons with embedded DU fragments. Additional information is needed with regard to the short-term behavior of migrating U and its accumulation in lymph nodes, brain, testicles, and other infrequently studied U repositories

  18. Préservation du patrimoine bâti et développement durable : une tautologie ? Les cas de Nantes et Angers

    Directory of Open Access Journals (Sweden)

    Isabelle Garat

    2008-03-01

    Full Text Available A première vue patrimoine et développement durable, qui font aujourd’hui consensus, participent de la même logique : il s’agit de mieux articuler le temps présent des sociétés, à leur passé et leur avenir, dans une logique de transmission et de solidarité intergénérationnelle. Une étude croisée de deux villes de l’Ouest, Angers et Nantes, confrontées à une forte pression foncière dans un contexte de croissance démographique, nous montre que faire converger préoccupations patrimoniales et objectifs du développement durable ne va pourtant pas de soi. Envisagé à cette échelle avant tout sous l’angle de la densification urbaine, le développement durable peut en effet être mis en avant pour justifier certaines démolitions. Les deux notions de patrimoine et de développement durable apparaissent cependant plus en phase à travers les projets urbains nantais que dans ceux de la ville d’Angers. Ce que confirme l’élaboration récente des plans locaux d’urbanisme (PLU : alors qu’à Nantes l’intérêt pour les nouvelles possibilités de préservation du patrimoine local est manifeste, du côté d’Angers, c’est la volonté de garder les mains libres pour la densification urbaine qui l’emporte.Heritage and sustainable development, both widely accepted by the contemporary society, seem to proceed from the same logic : it is about better articulating the present and the future, in a logic of transmission and intergenerational solidarity. A cross study of Angers and Nantes, cities confronted with important construction pressure in a context of important population growth, tends to show that the convergence of heritage and sustainable development agendas is not obvious. While heritage is supposed to preserve designated elements, sustainable development can justify some necessary demolition in order to allow urban densification. The two notions of heritage and sustainable development seem however more

  19. 1er mars 2017 - Signature du livre d'or, visite du tunnel du LHC au Point 5 et de la caverne expériementale de CMS par le Secrétaire d’Etat français aux Affaires européennes auprès du ministre des Affaires étrangères et du Développement international H. Désir.

    CERN Multimedia

    Bennett, Sophia Elizabeth

    2017-01-01

    Entourent le Secrétaire d'Etat pendant la signature du livre d'or: Le Préfet de l’Ain A. Cochet; le Directeur des accélérateurs et de la technologie F. Bordry; Ambassadeur, Représentant permanent de la France auprès de l’Office des Nations Unies à Genève et des Organisations internationales en Suisse E. Laurin; la Directrice générale du CERN F. Gianotti et la Directrice des relations internationales C. Warakaulle. Sont également présents: H. Bertrand, Maire de Saint-Genis-Pouilly; C. Bouvier, Maire de Cessy; G. Rousseau, Secrétaire Général de la sous-préfecture de Gex; Y. Mecibah, Directrice de Cabinet du Maire de Saint-Genis-Pouilly; F. Croquette, Ambassadeur pour les droits de l’homme, chargé de la dimension internationale de la Shoah, des spoliations et du devoir de mémoire; S. Bonbayl, Conseillère technique, Cabinet du Secrétaire d’Etat chargé des Affaires Européennes au MAEDI; F. Cormon-Veyssière, Sous-Directrice des droits de l’Homme et des Affaires humanitaires au MAEDI...

  20. Commis, artisans, ouvriers. Les métamorphoses du salariat dans l’Égypte du XIXe siècle

    Directory of Open Access Journals (Sweden)

    Pascale Ghazaleh

    2012-01-01

    Full Text Available Cet article se propose d’analyser l’évolution du travail salarié en Égypte pendant la première moitié du XIXe siècle à la lumière des modifications apportées au système des charges vénales, qui permet aux sujets du sultan d’accéder au statut de ses serviteurs en achetant le droit de toucher une rémunération. Les réformes juridiques, militaires, économiques et administratives qu’institue Muhammad ‘Alî (r. 1805-1848 en Égypte vont ériger les instances de l’État naissant en source de rémunération et point de référence primaire des détenteurs de charges. Pendant la période 1840-1860, les recrutements de fonctionnaires et de travailleurs connaîtront un repli ; et, lorsque la question du travail salarié est abordée à part entière dans le discours public des années 1880, c’est sous son versant politique, comme métaphore de la tutelle coloniale.

  1. Impact socio professionnel de la libération chirurgicale du syndrome du canal carpien

    Science.gov (United States)

    Kraiem, Aouatef Mahfoudh; Hnia, Hajer; Bouzgarrou, Lamia; Henchi, Mohamed Adnène; Khalfallah, Taoufik

    2016-01-01

    L’objectif de notre travail était d’étudier les conséquences socioprofessionnelles d’une libération chirurgicale du SCC. Il s’agit d’une étude transversale portant sur les sujets opérés pour un SCC d’origine professionnelle ; recensés dans le Service de Médecine de Travail et de Pathologies Professionnelles au CHU Tahar Sfar de Mahdia en Tunisie sur une période de 8 ans allant du 1 Janvier 2006 au mois Décembre 2013. Le recueil des données s’est basé sur une fiche d’enquête, portant sur la description des caractéristiques socioprofessionnelles, médicales, et sur le devenir professionnel des participants. Pour étudier les contraintes psychosociales au travail, nous avons adopté le questionnaire de Karasek. La durée d’arrêt de travail après libération chirurgicale du SCC était significativement liée à l’existence d’autres troubles musculo-squelettiques autre que le SCC, la déclaration du SCC en maladie professionnelle et à l’ancienneté professionnelle des salariés. Quant au devenir professionnel des salariés opérés, 50,7% ont gardé le même poste, 15,3% ont bénéficié d’un aménagement de poste et 33,8% ont bénéficié d’un changement de poste dans la même entreprise. Le devenir professionnel de ces salariés était corrélé à leurs qualifications professionnelles et au type de l’atteinte sensitive et/ou motrice du nerf médian à l’EMG. Un certain nombre de facteurs non lésionnels déterminaient la durée de l’arrêt de travail, alors que le devenir professionnel des opérés pour SCC dépendait essentiellement de leurs qualifications professionnelles et des données de l’électromyogramme. Il est certain que des travaux beaucoup plus larges permettraient d’affiner encore ces résultats. PMID:27800089

  2. Nouvelle initiative des chaires de recherche Canada-Afrique du Sud ...

    International Development Research Centre (IDRC) Digital Library (Canada)

    8 déc. 2016 ... Elles s'appuient sur le South African Research Chairs Initiative (SARChl), ainsi que sur le programme de chaires de recherche industrielle, dont le financement provient en partie du Conseil de recherches en sciences naturelles et en génie du Canada (CRSNG) et du Programme des chaires de recherche ...

  3. 1 Commande multivariable du moteur asynchrone triphasé à cage ...

    African Journals Online (AJOL)

    AKA BOKO

    Correspondance, courriel : rabenarivo.michel@yahoo.fr. Résumé. La commande du moteur asynchrone triphasé à ... synthèse du système à l'aide du logiciel MATLAB. Mots-clés : commande, système multivariable, variation de ... of the system by MATLAB software. Keywords : control, MIMO system, frequency variation, ...

  4. ABS: Sequence alignment by scanning

    KAUST Repository

    Bonny, Mohamed Talal; Salama, Khaled N.

    2011-01-01

    Sequence alignment is an essential tool in almost any computational biology research. It processes large database sequences and considered to be high consumers of computation time. Heuristic algorithms are used to get approximate but fast results. We introduce fast alignment algorithm, called Alignment By Scanning (ABS), to provide an approximate alignment of two DNA sequences. We compare our algorithm with the well-known alignment algorithms, the FASTA (which is heuristic) and the 'Needleman-Wunsch' (which is optimal). The proposed algorithm achieves up to 76% enhancement in alignment score when it is compared with the FASTA Algorithm. The evaluations are conducted using different lengths of DNA sequences. © 2011 IEEE.

  5. ABS: Sequence alignment by scanning

    KAUST Repository

    Bonny, Mohamed Talal

    2011-08-01

    Sequence alignment is an essential tool in almost any computational biology research. It processes large database sequences and considered to be high consumers of computation time. Heuristic algorithms are used to get approximate but fast results. We introduce fast alignment algorithm, called Alignment By Scanning (ABS), to provide an approximate alignment of two DNA sequences. We compare our algorithm with the well-known alignment algorithms, the FASTA (which is heuristic) and the \\'Needleman-Wunsch\\' (which is optimal). The proposed algorithm achieves up to 76% enhancement in alignment score when it is compared with the FASTA Algorithm. The evaluations are conducted using different lengths of DNA sequences. © 2011 IEEE.

  6. Fast global sequence alignment technique

    KAUST Repository

    Bonny, Mohamed Talal

    2011-11-01

    Bioinformatics database is growing exponentially in size. Processing these large amount of data may take hours of time even if super computers are used. One of the most important processing tool in Bioinformatics is sequence alignment. We introduce fast alignment algorithm, called \\'Alignment By Scanning\\' (ABS), to provide an approximate alignment of two DNA sequences. We compare our algorithm with the wellknown sequence alignment algorithms, the \\'GAP\\' (which is heuristic) and the \\'Needleman-Wunsch\\' (which is optimal). The proposed algorithm achieves up to 51% enhancement in alignment score when it is compared with the GAP Algorithm. The evaluations are conducted using different lengths of DNA sequences. © 2011 IEEE.

  7. Card sorting, test d’oculométrie et test d’utilisabilité sur le site web du Service d’information scientifique du CERN

    CERN Document Server

    Marchand, Alizée; Schneider, René

    Ce travail de Bachelor a pour objectif l’évaluation du site web du Service d’information scientifique du CERN. Cette évaluation est basée sur les méthodes utilisées en User Centered Design (UCD). Pour effectuer cette évaluation, nous avons sélectionné trois tests : un card sorting, un test d’oculométrie et un test d’utilisabilité. Selon la norme ISO 9241-11 :1998, l’utilisabilité se définit par « le degré selon lequel un produit peut être utilisé, par des utilisateurs identifiés, pour atteindre les buts définis avec efficacité, efficience et satisfaction, dans un contexte d’utilisation spécifié ». Les tests que nous avons réalisés nous ont permis d’identifier les problèmes d’utilisabilité du site du Service, en nous appuyant sur les caractéristiques d’utilisabilité définies dans cette norme. Pour ce faire, nous avons élaboré les tests en nous basant sur les pratiques utilisées par les spécialistes en UCD. Nous avons ensuite proposé à des employés du CERN, ...

  8. Projet pilote sur la stimulation du commerce des services au Moyen ...

    International Development Research Centre (IDRC) Digital Library (Canada)

    Projet pilote sur la stimulation du commerce des services au Moyen-Orient et en Afrique du Nord. Si certaines régions en développement ont réussi à s'intégrer aux chaînes de production mondiales, la région du Moyen-Orient et de l'Afrique du Nord ne participe encore à l'économie mondiale que par des activités simples et ...

  9. Pareto optimal pairwise sequence alignment.

    Science.gov (United States)

    DeRonne, Kevin W; Karypis, George

    2013-01-01

    Sequence alignment using evolutionary profiles is a commonly employed tool when investigating a protein. Many profile-profile scoring functions have been developed for use in such alignments, but there has not yet been a comprehensive study of Pareto optimal pairwise alignments for combining multiple such functions. We show that the problem of generating Pareto optimal pairwise alignments has an optimal substructure property, and develop an efficient algorithm for generating Pareto optimal frontiers of pairwise alignments. All possible sets of two, three, and four profile scoring functions are used from a pool of 11 functions and applied to 588 pairs of proteins in the ce_ref data set. The performance of the best objective combinations on ce_ref is also evaluated on an independent set of 913 protein pairs extracted from the BAliBASE RV11 data set. Our dynamic-programming-based heuristic approach produces approximated Pareto optimal frontiers of pairwise alignments that contain comparable alignments to those on the exact frontier, but on average in less than 1/58th the time in the case of four objectives. Our results show that the Pareto frontiers contain alignments whose quality is better than the alignments obtained by single objectives. However, the task of identifying a single high-quality alignment among those in the Pareto frontier remains challenging.

  10. Conversation sur les préoccupations scientifiques et les perspectives de recherche au sein du Laboratoire d'Anthropologie Visuelle et Sonore du Monde Contemporain

    Directory of Open Access Journals (Sweden)

    Jean Arlaud

    2000-06-01

    Full Text Available La présent conversation a été pensée comme l'opportunité de présenter le "Laboratoire d'Anthropologie Visuelle et Sonore du Monde Contemporain", de l'Université Paris 7 - Denis Diderot. Il a été crée en 1992 par monsieur le professeur Dr. Jean Arlaud, anthropologue et cinéaste, directeur auteur et réalisateur de plus de vingt filmes sur des sociétés de tous les continents, dans le même esprit que Jean Rouch, son directeur de doctorat. Ce laboratoire, qui regroupe actuellement 35 chercheurs statutaires et associés, développe des programmes de recherche en Asie Centrale (population Kalash, culture populaire et identité, Asie du Sud-Est ( danses masquées, musique, silat, Îles du Pacifique (Vanuatu, Etats Unis (population Cajun, Afrique (population nilotiques Nyangatom, populations Dogon et Bambara et Europe (anthropologie urbaine, anthropologie rurale, identité, migrations/changements. Ce dialogue, fruit de l'initiative du doctorant brésilien Luiz Eduardo Robinson Achutti, chercheur associé au laboratoire, présent la démarche scientifique et méthodologique du laboratoire. A travers les paroles du Dr. Jean Arlaud, du Dr.Pascal Dibie, de la Dra.Christine Louveau de la Guigneraye et Achutti, sont abordés les sujets et les préoccupations actuels de ces chercheurs, questions sur l'anthropologie de proximité, l'approche poétique, la pratique du travail avec les images et les sons, la ville comme lieu de recherche et les connections entre anthropologie et multimédia.

  11. Un Genevois coopte a la tete du Front islamique du salut

    CERN Multimedia

    Merckling, N

    2002-01-01

    "Le Front islamique du salut (FIS), a nomme a la tete de ce parti fondamentaliste un resident genevois, Mourad Dhani, chois parmi trois candidats. Ce physicien algerien est arrive a Geneve il y a 14 ans pour travailler au CERN (1 page).

  12. Polymorphisme de l'apolipoprotéine E dans la population du nord du Maroc: fréquence et influence sur les paramètres lipidiques

    Science.gov (United States)

    Benyahya, Fatiha; Barakat, Amina; Ghailani, Naima; Bennani, Mohcine

    2013-01-01

    Introduction L'objectif de ce travail est de déterminer les fréquences alléliques et génotypiques des sites polymorphes situés dans le gène de l'apolipoprotéine E (apo E) ainsi que leur impact sur les paramètres cliniques et lipidiques dans un échantillon de la population du nord du Maroc cliniquement diagnostiqué ADH. Méthodes Le génotype de l'apo E a été analysé par séquençage direct chez 46 patients cliniquement diagnostiqués ADH selon les critères standards. Résultats Les fréquences des allèles epsilon 3, epsilon 2 et epsilon 4 ont été respectivement 78.3%, 2.2% et 19.6%. La fréquence de l'allèle epsilon 4 est très élevée chez la population du nord du Maroc en comparaison avec les populations des autres régions marocaines. Elle est similaire à celle rapportée dans les pays de l'Europe du nord. Les taux du cholestérol total, du cholestérol LDL ainsi que la présence des xanthomes et les maladies cardiovasculaires ne différent pas entre les génotypes de l'apoE. En revanche, les résultats ont montré une influence de l'allèle epsilon4 sur le taux des triglycérides chez les sujets obèses. Conclusion Le génotype de l'apoE ne peut expliquer le phénotype clinique et biochimique présenté par des patients du Nord du Maroc cliniquement diagnostiqués ADH. PMID:24396563

  13. Alignment for CSR

    International Nuclear Information System (INIS)

    Wang Shoujin; Man Kaidi; Guo Yizhen; Cai Guozhu; Guo Yuhui

    2002-01-01

    Cooled Storage Ring of Heavy Ion Research Facility in Lanzhou (HIRFL-CSR) belongs to China great scientific project in China. The alignment for it is very difficult because of very large area and very high accuracy. For the special case in HIRFL-CSR, some new methods and new instruments are used, including the construction of survey control network, the usage of laser tracker, and CSR alignment database system with applications developed to store and analyze data. The author describes the whole procedure of CSR alignment

  14. CALCUL DU SPECTRE DE REFLEXION DU MULTICOUCHE Ni/C DANS LE DOMAINE DES RAYONS X

    Directory of Open Access Journals (Sweden)

    A MEDDOUR

    2000-12-01

    Full Text Available Le pouvoir réflecteur d’un dioptre quelconque dans le domaine des rayons X est trop faible, mais il est toujours possible de choisir des systèmes pouvant présenter un pic de réflexion d’intensité importante autour d’une incidence caractéristique du matériau. Ce dernier est un multicouche, composé de deux couches déposées en sandwich.                 Nous avons élaboré un programme qui permet de calculer la réflexion d’un tel matériau en suivant la méthode d’Abelès dans laquelle une couche mince est représentée par une matrice carrée contenant toutes les informations nécessaires pour le calcul de la réflexion. Ce programme tient compte aussi des rugosités aux interfaces du multicouche, vue leur importante influence sur l’intensité du pic apparaissant sur le spectre de réflexion.                 L’application du programme au multicouche Ni/C a montré  l’existence d’un pic centré autour de 31.32°. Son intensité est sensible au nombre de périodes dans le multicouche, aux épaisseurs des couches minces de Ni et de C et à la taille des rugosités des interfaces Ni/C et C/Ni.

  15. Spectrographic determination of chlorine and fluorine; Dosage du chlore et du fluor par spectrographie d'emission en atmosphere inerte

    Energy Technology Data Exchange (ETDEWEB)

    Contamin, G [Commissariat a l' Energie Atomique, Grenoble (France). Centre d' Etudes Nucleaires

    1965-04-01

    Experimental conditions have been investigated in order to obtain the highest sensitivity in spectrographic determination of chlorine and fluorine using the Fassel method of excitation in an inert atmosphere. The influence of the nature of the atmosphere, of the discharge conditions and of the matrix material has been investigated. The following results have been established: 1. chlorine determination is definitely possible: a working curve has been drawn between 10 {mu}g and 100 {mu}g, the detection limit being around 5 {mu}g; 2. fluorine determination is not satisfactory: the detection limit is still of the order of 80 {mu}g. The best operating conditions have been defined for both elements. (author) [French] Nous avons recherche quelles etaient les conditions permettant d'obtenir la meilleure sensibilite dans le dosage spectrographique du chlore et du fluor par la methode d'excitation en atmosphere inerte (methode de Fassel). Nous avons etudie l'influence de l'atmosphere gazeuse, des conditions de la decharge et du materiau de pastillage. Les points suivants ont ete etablis: 1. le dosage du chlore est possible: une courbe de dosage a ete tracee entre 10 {mu}g et 100 {mu}g et la limite de detection est de l'ordre de 5 {mu}g; 2. le dosage du fluor n'est pas satisfaisant: la limite de detection obtenue etant encore de l'ordre de 80 {mu}g. Les conditions operatoires ont ete precisees pour ces deux elements. (auteur)

  16. A generalized global alignment algorithm.

    Science.gov (United States)

    Huang, Xiaoqiu; Chao, Kun-Mao

    2003-01-22

    Homologous sequences are sometimes similar over some regions but different over other regions. Homologous sequences have a much lower global similarity if the different regions are much longer than the similar regions. We present a generalized global alignment algorithm for comparing sequences with intermittent similarities, an ordered list of similar regions separated by different regions. A generalized global alignment model is defined to handle sequences with intermittent similarities. A dynamic programming algorithm is designed to compute an optimal general alignment in time proportional to the product of sequence lengths and in space proportional to the sum of sequence lengths. The algorithm is implemented as a computer program named GAP3 (Global Alignment Program Version 3). The generalized global alignment model is validated by experimental results produced with GAP3 on both DNA and protein sequences. The GAP3 program extends the ability of standard global alignment programs to recognize homologous sequences of lower similarity. The GAP3 program is freely available for academic use at http://bioinformatics.iastate.edu/aat/align/align.html.

  17. Le marché sociolinguistique contemporain du Maroc

    NARCIS (Netherlands)

    de Ruiter, A.C.J.; Ziamari, Karima

    2014-01-01

    Au Maroc, les langues sont l’objet des polémiques les plus passionnées. Ce livre s’inscrit ainsi dans la continuité du débat concernant les politiques linguistiques adoptées et met à jour les évolutions récentes du marché sociolinguistique après l’adoption de la nouvelle constitution, approuvée par

  18. Complications du traitement traditionnel des fractures : aspects ...

    African Journals Online (AJOL)

    Tous les patients reçus avec des complications du traitement traditionnel des fractures ont été inclus dans ce travail. Le diagnostic des lésions était clinique et radiologique. Nous avions reçu 51 patients porteurs de complications suite à des traitements de médecine traditionnelle, soit 13,7% du total des patients hospitalisés ...

  19. Traitements didactiques preventifs d'un type de conceptions erronees en sciences physiques chez des eleves du secondaire

    Science.gov (United States)

    Blondin, Andre

    Dans un contexte constructiviste, les connaissances anterieures d'un individu sont essentielles a la construction de nouvelles connaissances. Quelle qu'en soit la source (certaines de ces connaissances ont ete elaborees en classe, d'autres ont ete elaborees par interaction personnelle de l'individu avec son environnement physique et social), ces connaissances, une fois acquises, constituent les matieres premieres de l'elaboration des nouvelles conceptions de cet individu. Generalement, cette influence est consideree comme positive. Cependant, dans un milieu scolaire ou l'apprentissage de certaines conceptions enchassees dans un programme d'etudes et enterinees par l'ensemble d'une communaute est obligatoire, certaines connaissances anterieures peuvent entraver la construction des conceptions exigees par la communaute. La litterature abonde de tels exemples. Cependant, certaines connaissances anterieures, en soi tout a fait conformes a l'Heritage, peuvent aussi, parce qu'utilisees de facon non pertinente, entraver la construction d'une conception exigee par la communaute. Ici, la litterature nous donne peu d'exemples de ce type, mais nous en fournirons quelques-uns dans le cadre theorique, et ce sera un d'entre eux qui servira de base a nos propos. En effet, une grande proportion d'eleves inscrits a un cours de sciences physiques de la quatrieme secondaire, en reponse a un probleme deja solutionne durant l'annee et redonne lors d'un examen sommatif, "Pourquoi la Lune nous montre-t-elle toujours la meme face?", attribue principalement la cause de ce phenomene a la rotation de la Terre sur son axe. En tant que responsable de l'enseignement de ce programme d'etudes, plusieurs questions nous sont venues a l'esprit, entre autres, comment, dans un contexte constructiviste, est-il possible de reduire chez un eleve, l'impact de cette connaissance anterieure dans l'elaboration de la solution et ainsi prevenir la construction d'une conception erronee? Nous avons teste nos

  20. Pairwise Sequence Alignment Library

    Energy Technology Data Exchange (ETDEWEB)

    2015-05-20

    Vector extensions, such as SSE, have been part of the x86 CPU since the 1990s, with applications in graphics, signal processing, and scientific applications. Although many algorithms and applications can naturally benefit from automatic vectorization techniques, there are still many that are difficult to vectorize due to their dependence on irregular data structures, dense branch operations, or data dependencies. Sequence alignment, one of the most widely used operations in bioinformatics workflows, has a computational footprint that features complex data dependencies. The trend of widening vector registers adversely affects the state-of-the-art sequence alignment algorithm based on striped data layouts. Therefore, a novel SIMD implementation of a parallel scan-based sequence alignment algorithm that can better exploit wider SIMD units was implemented as part of the Parallel Sequence Alignment Library (parasail). Parasail features: Reference implementations of all known vectorized sequence alignment approaches. Implementations of Smith Waterman (SW), semi-global (SG), and Needleman Wunsch (NW) sequence alignment algorithms. Implementations across all modern CPU instruction sets including AVX2 and KNC. Language interfaces for C/C++ and Python.