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Sample records for dry etched bragg

  1. Dry Etching

    DEFF Research Database (Denmark)

    Stamate, Eugen; Yeom, Geun Young

    2016-01-01

    generation) to 2,200 × 2,500 mm (eighth generation), and the substrate size is expected to increase further within a few years. This chapter aims to present relevant details on dry etching including the phenomenology, materials to be etched with the different recipes, plasma sources fulfilling the dry...

  2. Dry etching for microelectronics

    CERN Document Server

    Powell, RA

    1984-01-01

    This volume collects together for the first time a series of in-depth, critical reviews of important topics in dry etching, such as dry processing of III-V compound semiconductors, dry etching of refractory metal silicides and dry etching aluminium and aluminium alloys. This topical format provides the reader with more specialised information and references than found in a general review article. In addition, it presents a broad perspective which would otherwise have to be gained by reading a large number of individual research papers. An additional important and unique feature of this book

  3. Dry etching technology for semiconductors

    CERN Document Server

    Nojiri, Kazuo

    2015-01-01

    This book is a must-have reference to dry etching technology for semiconductors, which will enable engineers to develop new etching processes for further miniaturization and integration of semiconductor integrated circuits.  The author describes the device manufacturing flow, and explains in which part of the flow dry etching is actually used. The content is designed as a practical guide for engineers working at chip makers, equipment suppliers and materials suppliers, and university students studying plasma, focusing on the topics they need most, such as detailed etching processes for each material (Si, SiO2, Metal etc) used in semiconductor devices, etching equipment used in manufacturing fabs, explanation of why a particular plasma source and gas chemistry are used for the etching of each material, and how to develop etching processes.  The latest, key technologies are also described, such as 3D IC Etching, Dual Damascene Etching, Low-k Etching, Hi-k/Metal Gate Etching, FinFET Etching, Double Patterning ...

  4. Selective photochemical dry etching of compound semiconductors

    International Nuclear Information System (INIS)

    Ashby, C.I.H.

    1988-01-01

    When laser-driven etching of a semiconductor requires direct participation of photogenerated carriers, the etching quantum yield will be sensitive to the electronic properties of a specific semiconductor material. The band-gap energy of the semiconductor determines the minimum photon energy needed for carrier-driven etching since sub-gap photons do not generate free carriers. However, only those free carriers that reach the reacting surface contribute to etching and the ultimate carrier flux to the surface is controlled by more subtle electronic properties than the lowest-energy band gap. For example, the initial depth of carrier generation and the probability of carrier recombination between the point of generation and the surface profoundly influence the etching quantum yield. Appropriate manipulation of process parameters can provide additional reaction control based on such secondary electronic properties. Applications to selective dry etching of GaAs and related materials are discussed

  5. Dry etching technologies for reflective multilayer

    Science.gov (United States)

    Iino, Yoshinori; Karyu, Makoto; Ita, Hirotsugu; Kase, Yoshihisa; Yoshimori, Tomoaki; Muto, Makoto; Nonaka, Mikio; Iwami, Munenori

    2012-11-01

    We have developed a highly integrated methodology for patterning Extreme Ultraviolet (EUV) mask, which has been highlighted for the lithography technique at the 14nm half-pitch generation and beyond. The EUV mask is characterized as a reflective-type mask which is completely different compared with conventional transparent-type of photo mask. And it requires not only patterning of absorber layer without damaging the underlying multi reflective layers (40 Si/Mo layers) but also etching multi reflective layers. In this case, the dry etch process has generally faced technical challenges such as the difficulties in CD control, etch damage to quartz substrate and low selectivity to the mask resist. Shibaura Mechatronics ARESTM mask etch system and its optimized etch process has already achieved the maximal etch performance at patterning two-layered absorber. And in this study, our process technologies of multi reflective layers will be evaluated by means of optimal combination of process gases and our optimized plasma produced by certain source power and bias power. When our ARES™ is used for multilayer etching, the user can choose to etch the absorber layer at the same time or etch only the multilayer.

  6. Annealing and etching effects on strain and stress sensitivity of polymer optical fibre Bragg grating sensors

    DEFF Research Database (Denmark)

    Pospori, A.; Marques, C. A.F.; Sáez-Rodríguez, D.

    2017-01-01

    Thermal annealing and chemical etching effects on the strain and stress sensitivity of polymer optical fibre based sensors are investigated. Bragg grating sensors have been photo-inscribed in PMMA optical fibre and their strain and stress sensitivity has been characterised before and after any...... annealing or etching process. The annealing and etching processes have been tried in different sequence in order to investigate their impact on the sensor's performance. Results show with high confidence that fibre annealing can improve both strain and stress sensitivities. The fibre etching can also...... provide stress sensitivity enhancement, however the strain sensitivity changes seems to be random....

  7. Overview Of Dry-Etch Techniques

    Science.gov (United States)

    Salzer, John M.

    1986-08-01

    With pattern dimensions shrinking, dry methods of etching providing controllable degrees of anisotropy become a necessity. A number of different configurations of equipment - inline, hex, planar, barrel - have been offered, and within each type, there are numerous significant variations. Further, each specific type of machine must be perfected over a complex, interactive parameter space to achieve suitable removal of various materials. Among the most critical system parameters are the choice of cathode or anode to hold the wafers, the chamber pressure, the plasma excitation frequency, and the electrode and magnetron structures. Recent trends include the use of vacuum load locks, multiple chambers, multiple electrodes, downstream etching or stripping, and multistep processes. A major percentage of etches in production handle the three materials: polysilicon, oxide and aluminum. Recent process developments have targeted refractory metals, their silicides, and with increasing emphasis, silicon trenching. Indeed, with new VLSI structures, silicon trenching has become the process of greatest interest. For stripping, dry processes provide advantages other than anisotropy. Here, too, new configurations and methods have been introduced recently. While wet processes are less than desirable from a number of viewpoints (handling, safety, disposal, venting, classes of clean room, automatability), dry methods are still being perfected as a direct, universal replacement. The paper will give an overview of these machine structures and process solutions, together with examples of interest. These findings and the trends discussed are based on semiannual survey of manufacturers and users of the various types of equipment.

  8. Bend measurement using an etched fiber incorporating a fiber Bragg grating.

    Science.gov (United States)

    Rauf, Abdul; Zhao, Jianlin; Jiang, Biqiang; Jiang, Yajun; Jiang, Wei

    2013-01-15

    A fiber Bragg grating (FBG) based bend measurement method using an etched fiber is proposed that utilizes the coupling of the core mode to the cladding and radiation modes at the bending region. An etching region of 99 µm diameter that serves as bend sensing head is achieved at 10 mm upstream the FBG through processing in 40% hydrofluoric acid, while the FBG acts as a narrowband reflector to enhance the sensitivity. The power variation curves are obtained for a wide range of bend angles, but the performance is limited due to the presence of the loss peaks. The sensing response is improved by immersing the etching region in a refractive index matching gel. The results are analyzed by using curve fitting formulas and are in good agreement. A large dynamic range of -27° to +27° and sensitivity of 0.43 dBm/deg is achieved, which can be enhanced by reducing the etched diameter.

  9. Plasmonic nanoshell functionalized etched fiber Bragg gratings for highly sensitive refractive index measurements.

    Science.gov (United States)

    Burgmeier, Jörg; Feizpour, Amin; Schade, Wolfgang; Reinhard, Björn M

    2015-02-15

    A novel fiber optical refractive index sensor based on gold nanoshells immobilized on the surface of an etched single-mode fiber including a Bragg grating is demonstrated. The nanoparticle coating induces refractive index dependent waveguide losses, because of the variation of the evanescently guided part of the light. Hence the amplitude of the Bragg reflection is highly sensitive to refractive index changes of the surrounding medium. The nanoshell functionalized fiber optical refractive index sensor works in reflectance mode, is suitable for chemical and biochemical sensing, and shows an intensity dependency of 4400% per refractive index unit in the refractive index range between 1.333 and 1.346. Furthermore, the physical length of the sensor is smaller than 3 mm with a diameter of 6 μm, and therefore offers the possibility of a localized refractive index measurement.

  10. Dry etching of thin chalcogenide films

    Energy Technology Data Exchange (ETDEWEB)

    Petkov, Kiril [Acad. J. Malinowski Central Laboratory of Photoprocesses, Bulgarian Academy of Sciences, Acad. G. Bonchev Str., Bl. 109, 1113 Sofia (Bulgaria); Vassilev, Gergo; Vassilev, Venceslav, E-mail: kpetkov@clf.bas.b [Department of Semiconductors, University of Chemical Technology and Metallurgy, 8 Kl. Ohridsky Blvd., 1756 Sofia (Bulgaria)

    2010-04-01

    Fluorocarbon plasmas (pure and mixtures with Ar) were used to investigate the changes in the etching rate depending on the chalcogenide glasses composition and light exposure. The experiments were performed on modified commercial HZM-4 vacuum equipment in a diode electrode configuration. The surface microstructure of thin chalcogenide layers and its change after etching in CCl{sub 2}F{sub 2} and CF{sub 4} plasmas were studied by SEM. The dependence of the composition of As-S-Ge, As-Se and multicomponent Ge-Se-Sb-Ag-I layers on the etching rate was discussed. The selective etching of some glasses observed after light exposure opens opportunities for deep structure processing applications.

  11. Effective refractive index modulation based optical fiber humidity sensor employing etched fiber Bragg grating

    Science.gov (United States)

    Mundendhar, Pathi; Khijwania, Sunil K.

    2015-09-01

    Relative humidity (RH) sensor employing etched fiber Bragg grating (FBG) is reported where RH variations are captured using effective-index-modulation, rather than traditional strain-modulation. Additionly, linear sensor response over wide dynamic range with optimum characteristics is focused. Comprehensive experimental investigation is carried out for the sensor that comprises uniformly etched cladding in the FBG region. Obtained results are observed to be in agreement with the theoretical analysis. Sensor response is observed to be linear over dynamic range 3-94%RH with ~ 0.082 pm/%RH sensitivity, ~0.6%RH resolution, ~ +/-2.5%RH accuracy, ~ +/-0.2 pm average discrepancy and ~ 0.2s response time during humidification/desiccation.

  12. Low surface damage dry etched black silicon

    DEFF Research Database (Denmark)

    Plakhotnyuk, Maksym M.; Gaudig, Maria; Davidsen, Rasmus Schmidt

    2017-01-01

    Black silicon (bSi) is promising for integration into silicon solar cell fabrication flow due to its excellent light trapping and low reflectance, and a continuously improving passivation. However, intensive ion bombardment during the reactive ion etching used to fabricate bSi induces surface dam...

  13. Low surface damage dry etched black silicon

    Science.gov (United States)

    Plakhotnyuk, Maksym M.; Gaudig, Maria; Davidsen, Rasmus Schmidt; Lindhard, Jonas Michael; Hirsch, Jens; Lausch, Dominik; Schmidt, Michael Stenbæk; Stamate, Eugen; Hansen, Ole

    2017-10-01

    Black silicon (bSi) is promising for integration into silicon solar cell fabrication flow due to its excellent light trapping and low reflectance, and a continuously improving passivation. However, intensive ion bombardment during the reactive ion etching used to fabricate bSi induces surface damage that causes significant recombination. Here, we present a process optimization strategy for bSi, where surface damage is reduced and surface passivation is improved while excellent light trapping and low reflectance are maintained. We demonstrate that reduction of the capacitively coupled plasma power, during reactive ion etching at non-cryogenic temperature (-20 °C), preserves the reflectivity below 1% and improves the effective minority carrier lifetime due to reduced ion energy. We investigate the effect of the etching process on the surface morphology, light trapping, reflectance, transmittance, and effective lifetime of bSi. Additional surface passivation using atomic layer deposition of Al2O3 significantly improves the effective lifetime. For n-type wafers, the lifetime reaches 12 ms for polished and 7.5 ms for bSi surfaces. For p-type wafers, the lifetime reaches 800 μs for both polished and bSi surfaces.

  14. Dry etching technologies for the advanced binary film

    Science.gov (United States)

    Iino, Yoshinori; Karyu, Makoto; Ita, Hirotsugu; Yoshimori, Tomoaki; Azumano, Hidehito; Muto, Makoto; Nonaka, Mikio

    2011-11-01

    ABF (Advanced Binary Film) developed by Hoya as a photomask for 32 (nm) and larger specifications provides excellent resistance to both mask cleaning and 193 (nm) excimer laser and thereby helps extend the lifetime of the mask itself compared to conventional photomasks and consequently reduces the semiconductor manufacturing cost [1,2,3]. Because ABF uses Ta-based films, which are different from Cr film or MoSi films commonly used for photomask, a new process is required for its etching technology. A patterning technology for ABF was established to perform the dry etching process for Ta-based films by using the knowledge gained from absorption layer etching for EUV mask that required the same Ta-film etching process [4]. Using the mask etching system ARES, which is manufactured by Shibaura Mechatronics, and its optimized etching process, a favorable CD (Critical Dimension) uniformity, a CD linearity and other etching characteristics were obtained in ABF patterning. Those results are reported here.

  15. Selective dry etching of silicon containing anti-reflective coating

    Science.gov (United States)

    Sridhar, Shyam; Nolan, Andrew; Wang, Li; Karakas, Erdinc; Voronin, Sergey; Biolsi, Peter; Ranjan, Alok

    2018-03-01

    Multi-layer patterning schemes involve the use of Silicon containing Anti-Reflective Coating (SiARC) films for their anti-reflective properties. Patterning transfer completion requires complete and selective removal of SiARC which is very difficult due to its high silicon content (>40%). Typically, SiARC removal is accomplished through a non-selective etch during the pattern transfer process using fluorine containing plasmas, or an ex-situ wet etch process using hydrofluoric acid is employed to remove the residual SiARC, post pattern transfer. Using a non-selective etch may result in profile distortion or wiggling, due to distortion of the underlying organic layer. The drawbacks of using wet etch process for SiARC removal are increased overall processing time and the need for additional equipment. Many applications may involve patterning of active structures in a poly-Si layer with an underlying oxide stopping layer. In such applications, SiARC removal selective to oxide using a wet process may prove futile. Removing SiARC selectively to SiO2 using a dry etch process is also challenging, due to similarity in the nature of chemical bonds (Si - O) in the two materials. In this work, we present highly selective etching of SiARC, in a plasma driven by a surface wave radial line slot antenna. The first step in the process involves an in-situ modification of the SiARC layer in O2 plasma followed by selective etching in a NF3/H2 plasma. Surface treatment in O2 plasma resulted in enhanced etching of the SiARC layer. For the right processing conditions, in-situ NF3/H2 dry etch process demonstrated selectivity values greater than 15:1 with respect to SiO2. The etching chemistry, however, was sensitive to NF3:H2 gas ratio. For dilute NF3 in H2, no SiARC etching was observed. Presumably, this is due to the deposition of ammonium fluorosilicate layer that occurs for dilute NF3/H2 plasmas. Additionally, challenges involved in selective SiARC removal (selective to SiO2, organic

  16. Highly reflective Bragg gratings in slightly etched step-index polymer optical fiber.

    Science.gov (United States)

    Hu, Xuehao; Pun, Chi-Fung Jeff; Tam, Hwa-Yaw; Mégret, Patrice; Caucheteur, Christophe

    2014-07-28

    During the past few years, a strong progress has been made in the photo-writing of fiber Bragg gratings (FBGs) in polymer optical fibers (POFs), animated by the constant wish to enhance the grating reflectivity and improve the sensing performances. In this paper, we report the photo-inscription of highly reflective gratings in step-index POFs, obtained thanks to a slight etching of the cladding. We demonstrate that a cladding diameter decrease of ~12% is an ideal trade-off to produce highly reflective gratings with enhanced axial strain sensitivity, while keeping almost intact their mechanical resistance. For this, we make use of Trans-4-stilbenemethanol-doped photosensitive step-index poly(methyl methacrylate) (PMMA) POFs. FBGs are inscribed at ~1550 nm by the scanning phase mask technique in POFs of different external diameters. Reflectivity reaching 97% is achieved for 6 mm long FBGs, compared to 25% for non-etched POFs. We also report that a cladding decrease enhances the FBG axial tension while keeping unchanged temperature and surrounding refractive index sensitivities. Finally and for the first time, a measurement is conducted in transmission with polarized light, showing that a photo-induced birefringence of 7 × 10(-6) is generated (one order of magnitude higher than the intrinsic fiber birefringence), which is similar to the one generated in silica fiber using ultra-violet laser.

  17. Fiber-Optic Refractometer Based on an Etched High-Q ?-Phase-Shifted Fiber-Bragg-Grating

    OpenAIRE

    Zhang, Qi; Ianno, Natale J.; Han, Ming

    2013-01-01

    We present a compact and highly-sensitive fiber-optic refractometer based on a high-Q p-phase-shifted fiber-Bragg-grating (pFBG) that is chemically etched to the core of the fiber. Due to the p phase-shift, a strong pFBG forms a high-Q optical resonator and the reflection spectrum features an extremely narrow notch that can be used for highly sensitivity refractive index measurement. The etched pFBG demonstrated here has a diameter of ~9.3 μm and a length of only 7 mm, leading to a refractive...

  18. Stimulus responsive hydrogel-coated etched fiber Bragg grating for carcinogenic chromium (VI) sensing

    Science.gov (United States)

    Kishore, Pabbisetti Vayu Nandana; Madhuvarasu, Sai Shankar; Moru, Satyanarayana

    2018-01-01

    This paper proposes a chemo-mechanical-optical sensing approach for the detection of carcinogenic chromium (VI) metal ion using an etched fiber Bragg grating (FBG) coated with stimulus responsive hydrogel. Hydrogel synthesized from the blends of (3-acrylamidopropyl)-trimethylammonium chloride, which is highly responsive to chromium ions suffers a volume change when placed in Cr solution. When the proposed sensor system is exposed to various concentrations of Cr (VI) ion solution, FBG peak shifts due to the mechanical strain induced by the swelling of the hydrogel. The peak shift is correlated with the concentration of the Cr (VI) metal ion. Due to the reduction in the cladding diameter of FBG, wastage of swelling force due to hydrogel on FBG is lowered and utilized for more wavelength peak shift of FBG resulting in the increase in the sensitivity. The resolution of the sensor system is found to be 0.072 ppb. Trace amounts of chromium (VI) ion as low as 10 ppb can be sensed by this method. The sensor has shown good sensitivity, selectivity, and repeatability. The salient features of the sensors are its compact size, light weight, and adoptability for remote monitoring.

  19. High rate dry etching of InGaZnO by BCl3/O2 plasma

    Science.gov (United States)

    Park, Wanjae; Whang, Ki-Woong; Gwang Yoon, Young; Hwan Kim, Jeong; Rha, Sang-Ho; Seong Hwang, Cheol

    2011-08-01

    This paper reports the results of the high-rate dry etching of indium gallium zinc oxide (IGZO) at room temperature using BCl3/O2 plasma. We achieved an etch rate of 250 nm/min. We inferred from the x-ray photoelectron spectroscopy analysis that BOx or BOClx radicals generated from BCl3/O2 plasma cause the etching of the IGZO material. O2 initiates the etching of IGZO, and Ar removes nonvolatile byproducts from the surface during the etching process. Consequently, a smooth etched surface results when these gases are added to the etch gas.

  20. Fiber-optic refractometer based on an etched high-Q π-phase-shifted fiber-Bragg-grating.

    Science.gov (United States)

    Zhang, Qi; Ianno, Natale J; Han, Ming

    2013-07-10

    We present a compact and highly-sensitive fiber-optic refractometer based on a high-Q π-phase-shifted fiber-Bragg-grating (πFBG) that is chemically etched to the core of the fiber. Due to the p phase-shift, a strong πFBG forms a high-Q optical resonator and the reflection spectrum features an extremely narrow notch that can be used for highly sensitivity refractive index measurement. The etched πFBG demonstrated here has a diameter of ~9.3 μm and a length of only 7 mm, leading to a refractive index responsivity of 2.9 nm/RIU (RIU: refractive index unit) at an ambient refractive index of 1.318. The reflection spectrum of the etched πFBG features an extremely narrow notch with a linewidth of only 2.1 pm in water centered at ~1,550 nm, corresponding to a Q-factor of 7.4 × 10(5), which allows for potentially significantly improved sensitivity over refractometers based on regular fiber Bragg gratings.

  1. Fiber-Optic Refractometer Based on an Etched High-Q π-Phase-Shifted Fiber-Bragg-Grating

    Directory of Open Access Journals (Sweden)

    Ming Han

    2013-07-01

    Full Text Available We present a compact and highly-sensitive fiber-optic refractometer based on a high-Q p-phase-shifted fiber-Bragg-grating (pFBG that is chemically etched to the core of the fiber. Due to the p phase-shift, a strong pFBG forms a high-Q optical resonator and the reflection spectrum features an extremely narrow notch that can be used for highly sensitivity refractive index measurement. The etched pFBG demonstrated here has a diameter of ~9.3 μm and a length of only 7 mm, leading to a refractive index responsivity of 2.9 nm/RIU (RIU: refractive index unit at an ambient refractive index of 1.318. The reflection spectrum of the etched pFBG features an extremely narrow notch with a linewidth of only 2.1 pm in water centered at ~1,550 nm, corresponding to a Q-factor of 7.4 ´ 105, which allows for potentially significantly improved sensitivity over refractometers based on regular fiber Bragg gratings.

  2. Polymer degradation in reactive ion etching and its possible application to all dry processes

    International Nuclear Information System (INIS)

    Hiraoka, H.; Welsh, L.W. Jr.

    1981-01-01

    Dry etching processes involving CF 4 -plasma and reactive ion etching become increasingly important for microcircuit fabrication techniques. In these techniques polymer degradation and etch resistance against reactive species like F atoms and CF 3 + ions are the key factors in the processes. It is well-known that classical electron beam resists like poly(methyl methacrylate) and poly(1-butene sulfone) are not suitable for dry etching processes because they degrade rapidly under these etching conditions. In order to find a correlation of etching rate and polymer structures the thickness loss of polymer films have been measured for a variety of polymer films in reactive ion etching conditions, where CF 3 + ions are the major reactive species with an accelerating potential of 500 volts. Because of its high CF 4 -plasma and reactive ion etch resistance, and because of its high electron beam sensitivity, poly(methacrylonitrile) provides a positive working electron beam resist uniquely suited for all dry processes. (author)

  3. Dry Etching Characteristics of Amorphous Indium-Gallium-Zinc-Oxide Thin Films

    International Nuclear Information System (INIS)

    Zheng Yanbin; Li Guang; Wang Wenlong; Li Xiuchang; Jiang Zhigang

    2012-01-01

    Amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistor (TFT) backplane technology is the best candidate for flat panel displays (FPDs). In this paper, a-IGZO TFT structures are described. The effects of etch parameters (rf power, dc-bias voltage and gas pressure) on the etch rate and etch profile are discussed. Three kinds of gas mixtures are compared in the dry etching process of a-IGZO thin films. Lastly, three problems are pointed out that need to be addressed in the dry etching process of a-IGZO TFTs. (plasma technology)

  4. Temperature-referenced high-sensitivity point-probe optical fiber chem-sensors based on cladding etched fiber Bragg gratings

    OpenAIRE

    Zhou, Kaiming; Chen, Xianfeng F.; Zhang, Lin; Bennion, Ian

    2004-01-01

    Point-probe optical fiber chem-sensors have been implemented using cladding etched fiber Bragg gratings. The sensors possess refractive index sensing capability that can be utilized to measure chemical concentrations. The Bragg wavelength shift reaches 8 nm when the index of surrounding medium changes from 1.33 to 1.44, giving maximum sensitivity more than 10 times higher than that of previously reported devices. More importantly, the dual-grating configuration of the point-probe sensors offe...

  5. HF-based clad etching of fibre Bragg grating and its utilization in ...

    Indian Academy of Sciences (India)

    2014-02-09

    Feb 9, 2014 ... Abstract. This paper presents a fiber Bragg grating (FBG) based sensor to study the concentration of laser dye in dye–ethanol solution. The FBG used in this experiment is indigenously developed using 255 nm UV radiations from copper vapour laser. The cladding of the FBG was partially removed using ...

  6. Prevention of sidewall redeposition of etched byproducts in the dry Au etch process

    International Nuclear Information System (INIS)

    Aydemir, A; Akin, T

    2012-01-01

    In this paper we present a new technique of etching thin Au film in a dual frequency inductively coupled plasma (ICP) system on Si substrate to prevent the redeposition of etched Au particles over the sidewall of the masking material known as veils. First, the effect of the lithography step was investigated. Then the effects of etch chemistry and the process parameters on the redeposition of etched Au particles on the sidewall of the masking material were investigated. The redeposition effect was examined by depositing a thin Ti film over the masking material acting as a hard mask. The results showed that depositing a thin Ti film over the masking material prevents the formation of veils after etching Au in plasma environments for submicron size structures. Based on the results of this study, we propose a new technique that completely eliminates formation of veils after etching Au in plasma environments for submicron size structures. (paper)

  7. Optical detection of glucose and glycated hemoglobin using etched fiber Bragg gratings coated with functionalized reduced graphene oxide.

    Science.gov (United States)

    Sridevi, S; Vasu, K S; Sampath, S; Asokan, S; Sood, A K

    2016-07-01

    An enhanced optical detection of D-glucose and glycated hemoglobin (HbA1c ) has been established in this study using etched fiber Bragg gratings (eFBG) coated with aminophenylboronic acid (APBA)-functionalized reduced graphene oxide (RGO). The read out, namely the shift in Bragg wavelength (ΔλB ) is highly sensitive to changes that occur due to the adsorption of glucose (or HbA1c ) molecules on the eFBG sensor coated with APBA-RGO complex through a five-membered cyclic ester bond formation between glucose and APBA molecules. A limit of detection of 1 nM is achieved with a linear range of detection from 1 nM to 10 mM in the case of D-glucose detection experiments. For HbA1c , a linear range of detection varying from 86 nM to 0.23 mM is achieved. The observation of only 4 pm (picometer) change in ΔλB even for the 10 mM lactose solution confirms the specificity of the APBA-RGO complex coated eFBG sensors to glucose molecules. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  8. Advanced dry etching studies for micro- and nano-systems

    DEFF Research Database (Denmark)

    Rasmussen, Kristian Hagsted

    and even contaminate the surface with metal flakes after resist removal. Ion beam etching has also been used for etching of steel without any problems with redeposition. For steel the etch rate was low which reduced the selectivity to the photo resist. Sapphire, a crystal of aluminum oxide, has a very low....... However, just generating an oxygen plasma does not result in a controllable etch and may give rise to a poor surface for later use. It may be necessary to introduce other gases such as SF6 to reduce surface roughness. Roughness can also be introduced by the mask in the form of redeposition of material...

  9. Improved response time of laser etched polymer optical fiber Bragg grating humidity sensor

    OpenAIRE

    Zhang, Wei; Chen, Xianfeng; Liu, Chen; Lu, Yuanfu; Cardoso, Marcos; Webb, David J.

    2015-01-01

    The humidity sensor made of polymer optical fiber Bragg grating (POFBG) responds to the water content change in fiber induced by the change of environmental condition. The response time strongly depends on fiber size as the water change is a diffusion process. The ultra short laser pulses have been providing an effective micro fabrication method to achieve spatial localized modification in materials. In this work we used the excimer laser to create different microstructures (slot, D-shape) in...

  10. Effect of deposition temperature and thermal annealing on the dry etch rate of a-C: H films for the dry etch hard process of semiconductor devices

    International Nuclear Information System (INIS)

    Lee, Seung Moo; Won, Jaihyung; Yim, Soyoung; Park, Se Jun; Choi, Jongsik; Kim, Jeongtae; Lee, Hyeondeok; Byun, Dongjin

    2012-01-01

    The effect of deposition and thermal annealing temperatures on the dry etch rate of a-C:H films was investigated to increase our fundamental understanding of the relationship between thermal annealing and dry etch rate and to obtain a low dry etch rate hard mask. The hydrocarbon contents and hydrogen concentration were decreased with increasing deposition and annealing temperatures. The I(D)/I(G) intensity ratio and extinction coefficient of the a-C:H films were increased with increasing deposition and annealing temperatures because of the increase of sp 2 bonds in the a-C:H films. There was no relationship between the density of the unpaired electrons and the deposition temperature, or between the density of the unpaired electrons and the annealing temperature. However, the thermally annealed a-C:H films had fewer unpaired electrons compared with the as-deposited ones. Transmission electron microscopy analysis showed the absence of any crystallographic change after thermal annealing. The density of the as-deposited films was increased with increasing deposition temperature. The density of the 600 °C annealed a-C:H films deposited under 450 °C was decreased but at 550 °C was increased, and the density of all 800 °C annealed films was increased. The dry etch rate of the as-deposited a-C:H films was negatively correlated with the deposition temperature. The dry etch rate of the 600 °C annealed a-C:H films deposited at 350 °C and 450 °C was faster than that of the as-deposited film and that of the 800 °C annealed a-C:H films deposited at 350 °C and 450 °C was 17% faster than that of the as-deposited film. However, the dry etch rate of the 550 °C deposited a-C:H film was decreased after annealing at 600 °C and 800 °C. The dry etch rate of the as-deposited films was decreased with increasing density but that of the annealed a-C:H films was not. These results indicated that the dry etch rate of a-C:H films for dry etch hard masks can be further decreased by

  11. Alignment and Use of Self-Assembled Peptide Nanotubes as Dry-Etching Mask

    DEFF Research Database (Denmark)

    Andersen, Karsten Brandt; Castillo, Jaime; Bakmand, Tanya

    2012-01-01

    candidate for controlled nanofabrication without organic solvents. The present work demonstrates how this unique structure can be aligned, manipulated and used as both an etching mask in a dry etching procedure and as a lift-off material. As a further demonstration of the potential of this technique...

  12. Dry etching of ITO by magnetic pole enhanced inductively coupled plasma for display and biosensing devices

    Energy Technology Data Exchange (ETDEWEB)

    Meziani, T. [European Commission, Joint Research Centre, Institute for Health and Consumer Protection, 21020 Ispra (Vatican City State, Holy See,) (Italy)]. E-mail: tarik.meziani@jrc.it; Colpo, P. [European Commission, Joint Research Centre, Institute for Health and Consumer Protection, 21020 Ispra (Va) (Italy)]. E-mail: pascal.colpo@jrc.it; Lambertini, V. [Centro Ricerche Fiat, Strada Torino 50, 10043 Orbassano (TO) (Italy); Ceccone, G. [European Commission, Joint Research Centre, Institute for Health and Consumer Protection, 21020 Ispra (Va) (Italy); Rossi, F. [European Commission, Joint Research Centre, Institute for Health and Consumer Protection, 21020 Ispra (Va) (Italy)

    2006-03-15

    The dry etching of indium tin oxide (ITO) layers deposited on glass substrates was investigated in a high density inductively coupled plasma (ICP) source. This innovative low pressure plasma source uses a magnetic core in order to concentrate the electromagnetic energy on the plasma and thus provides for higher plasma density and better uniformity. Different gas mixtures were tested containing mainly hydrogen, argon and methane. In Ar/H{sub 2} mixtures and at constant bias voltage (-100 V), the etch rate shows a linear dependence with input power varying the same way as the ion density, which confirms the hypothesis that the etching process is mainly physical. In CH{sub 4}/H{sub 2} mixtures, the etch rate goes through a maximum for 10% CH{sub 4} indicating a participation of the radicals to the etching process. However, the etch rate remains quite low with this type of gas mixture (around 10 nm/min) because the etching mechanism appears to be competing with a deposition process. With CH{sub 4}/Ar mixtures, a similar feature appeared but the etch rate was much higher, reaching 130 nm/min at 10% of CH{sub 4} in Ar. The increase in etch rate with the addition of a small quantity of methane indicates that the physical etching process is enhanced by a chemical mechanism. The etching process was monitored by optical emission spectroscopy that appeared to be a valuable tool for endpoint detection.

  13. Dry etching characteristics of GaN for blue/green light-emitting diode fabrication

    International Nuclear Information System (INIS)

    Baik, K.H.; Pearton, S.J.

    2009-01-01

    The etch rates, surface morphology and sidewall profiles of features formed in GaN/InGaN/AlGaN multiple quantum well light-emitting diodes by Cl 2 -based dry etching are reported. The chlorine provides an enhancement in etch rate of over a factor of 40 relative to the physical etching provided by Ar and the etching is reactant-limited until chlorine gas flow rates of at least 50 standard cubic centimeters per minute. Mesa sidewall profile angle control is possible using a combination of Cl 2 /Ar plasma chemistry and SiO 2 mask. N-face GaN is found to etch faster than Ga-face surfaces under the same conditions. Patterning of the sapphire substrate for improved light extraction is also possible using the same plasma chemistry

  14. Dry etch challenges for CD shrinkage in memory process

    Science.gov (United States)

    Matsushita, Takaya; Matsumoto, Takanori; Mukai, Hidefumi; Kyoh, Suigen; Hashimoto, Kohji

    2015-03-01

    Line pattern collapse attracts attention as a new problem of the L&S formation in sub-20nm H.P feature. Line pattern collapse that occurs in a slight non-uniformity of adjacent CD (Critical dimension) space using double patterning process has been studied with focus on micro-loading effect in Si etching. Bias RF pulsing plasma etching process using low duty cycle helped increase of selectivity Si to SiO2. In addition to the effect of Bias RF pulsing process, the thin mask obtained from improvement of selectivity has greatly suppressed micro-loading in Si etching. However it was found that micro-loading effect worsen again in sub-20nm space width. It has been confirmed that by using cycle etch process to remove deposition with CFx based etching micro-loading effect could be suppressed. Finally, Si etching process condition using combination of results above could provide finer line and space without "line pattern collapse" in sub-20nm.

  15. Pulsed high-density plasmas for advanced dry etching processes

    International Nuclear Information System (INIS)

    Banna, Samer; Agarwal, Ankur; Cunge, Gilles; Darnon, Maxime; Pargon, Erwine; Joubert, Olivier

    2012-01-01

    Plasma etching processes at the 22 nm technology node and below will have to satisfy multiple stringent scaling requirements of microelectronics fabrication. To satisfy these requirements simultaneously, significant improvements in controlling key plasma parameters are essential. Pulsed plasmas exhibit considerable potential to meet the majority of the scaling challenges, while leveraging the broad expertise developed over the years in conventional continuous wave plasma processing. Comprehending the underlying physics and etching mechanisms in pulsed plasma operation is, however, a complex undertaking; hence the full potential of this strategy has not yet been realized. In this review paper, we first address the general potential of pulsed plasmas for plasma etching processes followed by the dynamics of pulsed plasmas in conventional high-density plasma reactors. The authors reviewed more than 30 years of academic research on pulsed plasmas for microelectronics processing, primarily for silicon and conductor etch applications, highlighting the potential benefits to date and challenges in extending the technology for mass-production. Schemes such as source pulsing, bias pulsing, synchronous pulsing, and others in conventional high-density plasma reactors used in the semiconductor industry have demonstrated greater flexibility in controlling critical plasma parameters such as ion and radical densities, ion energies, and electron temperature. Specifically, plasma pulsing allows for independent control of ion flux and neutral radicals flux to the wafer, which is key to eliminating several feature profile distortions at the nanometer scale. However, such flexibility might also introduce some difficulty in developing new etching processes based on pulsed plasmas. Therefore, the main characteristics of continuous wave plasmas and different pulsing schemes are compared to provide guidelines for implementing different schemes in advanced plasma etching processes based on

  16. Continuous Process for the Etching, Rinsing and Drying of MEMS Using Supercritical Carbon Dioxide

    Energy Technology Data Exchange (ETDEWEB)

    Min, Seon Ki; Han, Gap Su; You, Seong-sik [Korea University of Technology and Education, Cheonan (Korea, Republic of)

    2015-10-15

    The previous etching, rinsing and drying processes of wafers for MEMS (microelectromechanical system) using SC-CO{sub 2} (supercritical-CO{sub 2}) consists of two steps. Firstly, MEMS-wafers are etched by organic solvent in a separate etching equipment from the high pressure dryer and then moved to the high pressure dryer to rinse and dry them using SC-CO{sub 2}. We found that the previous two step process could be applied to etch and dry wafers for MEMS but could not confirm the reproducibility through several experiments. We thought the cause of that was the stiction of structures occurring due to vaporization of the etching solvent during moving MEMS wafer to high pressure dryer after etching it outside. In order to improve the structure stiction problem, we designed a continuous process for etching, rinsing and drying MEMS-wafers using SC-CO{sub 2} without moving them. And we also wanted to know relations of states of carbon dioxide (gas, liquid, supercritical fluid) to the structure stiction problem. In the case of using gas carbon dioxide (3 MPa, 25 .deg. C) as an etching solvent, we could obtain well-treated MEMS-wafers without stiction and confirm the reproducibility of experimental results. The quantity of rinsing solvent used could be also reduced compared with the previous technology. In the case of using liquid carbon dioxide (3 MPa, 5 .deg. C), we could not obtain well-treated MEMS-wafers without stiction due to the phase separation of between liquid carbon dioxide and etching co-solvent(acetone). In the case of using SC-CO{sub 2} (7.5 Mpa, 40 .deg. C), we had as good results as those of the case using gas-CO{sub 2}. Besides the processing time was shortened compared with that of the case of using gas-CO{sub 2}.

  17. Exploration of suitable dry etch technologies for directed self-assembly

    Science.gov (United States)

    Yamashita, Fumiko; Nishimura, Eiichi; Yatsuda, Koichi; Mochiki, Hiromasa; Bannister, Julie

    2012-03-01

    Directed self-assembly (DSA) has shown the potential to replace traditional resist patterns and provide a lower cost alternative for sub-20-nm patterns. One of the possible roadblocks for DSA implementation is the ability to etch the polymers to produce quality masks for subsequent etch processes. We have studied the effects of RF frequency and etch chemistry for dry developing DSA patterns. The results of the study showed a capacitively-coupled plasma (CCP) reactor with very high frequency (VHF) had superior pattern development after the block co-polymer (BCP) etch. The VHF CCP demonstrated minimal BCP height loss and line edge roughness (LER)/line width roughness (LWR). The advantage of CCP over ICP is the low dissociation so the etch rate of BCP is maintained low enough for process control. Additionally, the advantage of VHF is the low electron energy with a tight ion energy distribution that enables removal of the polymethyl methacrylate (PMMA) with good selectivity to polystyrene (PS) and minimal LER/LWR. Etch chemistries were evaluated on the VHF CCP to determine ability to treat the BCPs to increase etch resistance and feature resolution. The right combination of RF source frequencies and etch chemistry can help overcome the challenges of using DSA patterns to create good etch results.

  18. Fabrication of porous silicon based tunable distributed Bragg reflectors by anodic etching of irradiated silicon

    International Nuclear Information System (INIS)

    Vendamani, V.S.; Dang, Z.Y.; Ramana, P.; Pathak, A.P.; Ravi Kanth Kumar, V.V.; Breese, M.B.H.; Nageswara Rao, S.V.S.

    2015-01-01

    Highlights: • Fabrication of tunable distributed Bragg reflectors (DBRs) by gamma/ion irradiation of Si and subsequent formation of porous silicon multilayers has been described. • The central wavelength and the width of the stop band are found to decrease with increase in irradiation fluence. • The Si samples irradiated with highest fluence of 2 × 10 13 ions/cm 2 (100 MeV Ag ions) and 60 kGy (gamma) showed a central reflection at λ = 476 nm and 544 nm respectively, in contrast to un-irradiated sample, where λ = 635 nm. • The observed changes in the central wavelengths are attributed to the density of defects generated by gamma and ion irradiation in c-Si. • This study is expected to provide useful information for fabricating tunable wave reflectors for optical communication and other device applications. - Abstract: We report a study on the fabrication of tunable distributed Bragg reflectors (DBRs) by gamma/ion irradiation of Si and subsequent formation of porous silicon multilayers. Porous Si multilayers with 50 bilayers were designed to achieve high intensity of reflection. The reflection spectra appear to have a broad continuous band between 400 and 800 nm with a distinct central wavelength corresponding to different wave reflectors. The central wavelength and the width of the stop band are found to decrease with increase in irradiation fluence. The Si samples irradiated with highest fluence of 2 × 10 13 ions/cm 2 (100 MeV Ag ions) and 60 kGy (gamma) showed a central reflection at λ = 476 nm and 544 nm respectively, in contrast to un-irradiated sample, where λ = 635 nm. The observed changes are attributed to the density of defects generated by gamma and ion irradiation in c-Si. These results suggest that the gamma irradiation is a convenient and alternative method to tune the central wavelength of reflection without creating high density of defects by high energy ion implantation. This study is expected to provide useful information for

  19. Black Silicon formation using dry etching for solar cells applications

    International Nuclear Information System (INIS)

    Murias, D.; Reyes-Betanzo, C.; Moreno, M.; Torres, A.; Itzmoyotl, A.; Ambrosio, R.; Soriano, M.; Lucas, J.; Cabarrocas, P. Roca i

    2012-01-01

    A study on the formation of Black Silicon on crystalline silicon surface using SF 6 /O 2 and SF 6 /O 2 /CH 4 based plasmas in a reactive ion etching (RIE) system is presented. The effect of the RF power, chamber pressure, process time, gas flow rates, and gas mixtures on the texture of silicon surface has been analyzed. Completely Black Silicon surfaces containing pyramid like structures have been obtained, using an optimized mask-free plasma process. Moreover, the Black Silicon surfaces have demonstrated average values of 1% and 4% for specular and diffuse reflectance respectively, feature that is suitable for the fabrication of low cost solar cells.

  20. Fiber Bragg Grating Sensor to Monitor Stress Kinetics in Drying Process of Commercial Latex Paints

    Directory of Open Access Journals (Sweden)

    Ivo de Lourenço

    2010-05-01

    Full Text Available In this paper, we report a study about the application of packaged fiber Bragg gratings used as strain sensors to monitor the stress kinetics during the drying process of commercial latex paints. Three stages of drying with distinct mechanical deformation and temporal behaviors were identified for the samples, with mechanical deformation from 15 μm to 21 μm in the longitudinal film dimension on time intervals from 370 to 600 minutes. Drying time tests based on human sense technique described by the Brazilian Technical Standards NBR 9558 were also done. The results obtained shows that human sense technique has a limited perception of the drying process and that the optical measurement system proposed can be used to characterize correctly the dry-through stage of paint. The influence of solvent (water addition in the drying process was also investigated. The paint was diluted with four parts paint and one part water (80% paint, and one part paint and one part water (50% paint. It was observed that the increase of the water ratio mixed into the paint decreases both the mechanical deformation magnitude and the paint dry-through time. Contraction of 5.2 μm and 10.4 μm were measured for concentrations of 50% and 80% of paint in the mixture, respectively. For both diluted paints the dry-through time was approximately 170 minutes less than undiluted paint. The optical technique proposed in this work can contribute to the development of new standards to specify the drying time of paint coatings.

  1. Hydrogen iodide-based dry etching of GaAs, InP, and related compounds

    International Nuclear Information System (INIS)

    Pearton, S.J.; Chakrabarti, U.K.; Hobson, W.S.; Abernathy, C.R.; Katz, A.; Ren, F.; Fullowan, T.R.; Perley, A.P.

    1992-01-01

    In this paper HI/H 2 /Ar discharges are shown to be universal etchants for III-V semiconductors, giving rise to highly anisotropic features with smooth surface morphologies. At low dc Self bias (-V) and low pressure (1 mTorr), etch rates for all III-V materials of >2000 Angstrom · min -1 are possible for high HI percentages in the discharges, whereas rates greater than 1 μm · min -1 are obtained at higher pressures and dc biases. These etch rates are approximately an order of magnitude faster than for CH 4 /H 2 Ar mixtures under the same conditions and there is no polymer deposition on the mask or within the reactor chamber with HI/H 2 /Ar. Auger electron spectroscopy reveals residue-free, stoichiometric surfaces after dry etching in this mixture. As a result, photoluminescent intensities from dry etched samples remain high with little apparent damage introduction. Changes in the near-surface carrier concentration due to hydrogen passivation effects are also negligible with HI-based mixtures in comparison to CH 4 -based dry etching

  2. Design of experiment characterization of microneedle fabrication processes based on dry silicon etching

    Science.gov (United States)

    Held, J.; Gaspar, J.; Ruther, P.; Hagner, M.; Cismak, A.; Heilmann, A.; Paul, O.

    2010-02-01

    This paper reports on the characterization of dry etching-based processes for the fabrication of silicon microneedles using a design of experiment (DoE) approach. The possibility of using such microneedles as protruding microelectrodes able to electroporate adherently growing cells and record intracellular potentials motivates the systematic analysis of the influence of etching parameters on the needle shape. Two processes are characterized: a fully isotropic etch process and a three-step etching approach. In the first case, the shape of the microneedles is defined by a single etch step. For the stepped method, the structures are realized using the following sequence: a first, isotropic step defines the tip; this is followed by anisotropic etching that increases the height of the needle; a final isotropic procedure thins the microneedle and sharpens its tip. From the various process parameters tested, it is concluded that the isotropic fabrication is influenced mostly by four process parameters, whereas six parameters dominantly govern the outcome of the stepped etching technique. The dependence of the needle shape on the etch mask diameter is also investigated. Microneedles with diameters down to the sub-micrometer range and heights below 10 µm are obtained. The experimental design is performed using the D-optimal method. The resulting geometry, i.e. heights, diameters and radii of curvature measured at different positions, is extracted from scanning electron micrographs of needle cross-sections obtained from cuts by focused ion beam. The process parameters are used as inputs and the geometry features of the microneedles as outputs for the analysis of the process.

  3. Design of experiment characterization of microneedle fabrication processes based on dry silicon etching

    International Nuclear Information System (INIS)

    Held, J; Gaspar, J; Ruther, P; Paul, O; Hagner, M; Cismak, A; Heilmann, A

    2010-01-01

    This paper reports on the characterization of dry etching-based processes for the fabrication of silicon microneedles using a design of experiment (DoE) approach. The possibility of using such microneedles as protruding microelectrodes able to electroporate adherently growing cells and record intracellular potentials motivates the systematic analysis of the influence of etching parameters on the needle shape. Two processes are characterized: a fully isotropic etch process and a three-step etching approach. In the first case, the shape of the microneedles is defined by a single etch step. For the stepped method, the structures are realized using the following sequence: a first, isotropic step defines the tip; this is followed by anisotropic etching that increases the height of the needle; a final isotropic procedure thins the microneedle and sharpens its tip. From the various process parameters tested, it is concluded that the isotropic fabrication is influenced mostly by four process parameters, whereas six parameters dominantly govern the outcome of the stepped etching technique. The dependence of the needle shape on the etch mask diameter is also investigated. Microneedles with diameters down to the sub-micrometer range and heights below 10 µm are obtained. The experimental design is performed using the D-optimal method. The resulting geometry, i.e. heights, diameters and radii of curvature measured at different positions, is extracted from scanning electron micrographs of needle cross-sections obtained from cuts by focused ion beam. The process parameters are used as inputs and the geometry features of the microneedles as outputs for the analysis of the process.

  4. Defect-selective dry etching for quick and easy probing of hexagonal boron nitride domains

    Science.gov (United States)

    Wu, Qinke; Lee, Joohyun; Park, Sangwoo; Woo, Hwi Je; Lee, Sungjoo; Song, Young Jae

    2018-03-01

    In this study, we demonstrate a new method to selectively etch the point defects or the boundaries of as-grown hexagonal boron nitride (hBN) films and flakes in situ on copper substrates using hydrogen and argon gases. The initial quality of the chemical vapor deposition-grown hBN films and flakes was confirmed by UV-vis absorption spectroscopy, atomic force microscopy, and transmission electron microscopy. Different gas flow ratios of Ar/H2 were then employed to etch the same quality of samples and it was found that etching with hydrogen starts from the point defects and grows epitaxially, which helps in confirming crystalline orientations. However, etching with argon is sensitive to line defects (boundaries) and helps in visualizing the domain size. Finally, based on this defect-selective dry etching technique, it could be visualized that the domains of a polycrystalline hBN monolayer merged together with many parts, even with those that grew from a single nucleation seed.

  5. Selective laser-induced photochemical dry etching of semiconductors controlled by ion-bombardment-induced damage

    International Nuclear Information System (INIS)

    Ashby, C.I.H.; Myers, D.R.; Vook, F.L.

    1987-01-01

    When a photochemical dry etching process requires direct participation of photogenerated carriers in the chemical reaction, it is sensitive to the electronic properties of the semiconductor. For such solid-excitation-based dry etching processes, the balance between reaction and carrier recombination rates determines the practical utility of a particular reaction for device fabrication. The distance from the surface at which the photocarriers are generated by light adsorption is determined by the absorption coefficient. In the absence of an external bias potential, only those carriers formed within a diffusion length of the surface space-charge region will have an opportunity to drive the dry etching reaction. When the absorption coefficient is high, most of the photons generate carriers within a diffusion length from the surface space-charge region, and the etching rate is largely determined by the balance between the rate of the carrier-driven reaction and the surface recombination velocity. When the recombination rate of free carriers in the bulk of the semiconductor is high, the effective diffusion length is reduced and fewer of the carriers generated in the subsurface region ever reach the surface. An important effect of ion bombardment is the creation of many lattice defects that increase the rate of recombination of electrons and holes. When a sufficient number of defects, which act as recombination sites, are formed during ion implantation, the recombination of photogenerated carriers at these defects in the subsurface region can greatly reduce the number of carriers which can reach the surface and drive a photochemical etching reaction

  6. Monolithic mode-locked lasers with deeply dry etched Bragg mirror

    DEFF Research Database (Denmark)

    Larsson, David; Yvind, Kresten; Hvam, Jørn Märcher

    Background: Semiconductor mode-locked lasers are attractive as components in futureultra high-speed telecommunication systems (160-640Gb/s); as picosecond pulse sources,clock-recovery devices and for demultiplexing in Optical Time Division Multiplexing(OTDM) systems. We have recently designed...... it possible to buy epitaxial wafers fromphotonic foundries as in the microelectronic industry.Design: The reflectivity spectrum from the total grating is calculated by matrixmultiplication of the individual periodic grating elements. The period of the grating,given by the mean effective index of the low....... The SiO2-film functions as a mask in the subsequent RIE of thesemiconductor (InP). We are now optimizing the semiconductor RIE to achieve 2 µmdeep waveguides and gratings with smooth vertical sidewalls and smooth bottom surface.This optimization involves optimizing the reaction chamber parameters: CH4/H2...

  7. Fabrication of Ni stamp with high aspect ratio, two-leveled, cylindrical microstructures using dry etching and electroplating

    DEFF Research Database (Denmark)

    Petersen, Ritika Singh; Keller, Stephan Sylvest; Hansen, Ole

    2015-01-01

    obtained by defining a reservoir and a separating trench with different depths of 85 and 125 μm, respectively, in a single embossing step. The fabrication of the required two leveled stamp is done using a modified DEEMO (dry etching, electroplating and molding) process. Dry etching using the Bosch process...... and electroplating are optimized to obtain a stamp with smooth stamp surfaces and a positive sidewall profile. Using this stamp, hot embossing is performed successfully with excellent yield and high replication fidelity....

  8. Composite shear bond strength to dry and wet enamel with three self-etch adhesives

    Directory of Open Access Journals (Sweden)

    Shafiee F

    2006-01-01

    Full Text Available Background and Aim: The bonding mechanisms of self etching primers, based upon the simultaneous etching and priming of dentin, simplifies the bonding technique, but the efficiency of these systems is still controversial. This study compared the shear bond strength of three self etch adhesive systems in dry and wet conditions. Materials and Method: In this experimental study, 77 intact bovine lower incisors with flat 600 grit sanded enamel surface were fixed in acrylic molds and divided into 7 groups, of 11 teeth. The enamel surfaces were treated according to a special procedure as follows: Group 1: Prompt L-Pop (PLP in dry condition, Group 2: Prompt L-Pop in wet condition, Group 3: Clearfield SE Bond (CSEB in dry condition, Group 4: Clearfield SE Bond in wet condition, Group 5: iBond (iB in dry condition, Group 6: iBond in wet condition, Group 7: Margin Bond (Control in dry condition. Surfaces were air dried for ten seconds, or blot dried in wet condition. Composite resin was bonded on the enamel and built up by applying a cylindric teflon split mold (4 mm height 2mm diameter. After 24 hours storage in dionized water at room temperature, all specimens were thermocycled and shear bond test was employed by a universal testing machine (Instron with a cross-head speed of 1mm/min. The shear bond strength was recorded in MPa and data were analyzed with ANOVA and Scheffe statistical tests. P<0.05 was considered as statistically significant. The mode of failure was examined under a stereomicroscope. Results: 1- Shear bond strength of CSEB in dry condition (21.5 ± 4.8 MPa was significantly higher than PLP and iB groups (p<0.0001. 2- Shear bond strength of iB and PLP groups in dry condition (9.60 ± 2.2, 9.49 ± 3 MPa were significantly lower than CSEB and control (2.99 ± 5.1 MPa (P<0.0001. 3- There was no significant difference between PLP and iB groups in dry condition (P=1. 4- Shear bond strength of CSEB in wet condition (21.8 ± 3 MPa was

  9. Teste de microtração em esmalte de um sistema adesivo universal pela técnica etch-and-rinse e etch-and-dry

    OpenAIRE

    Peneque, Carolina Martins Santos

    2014-01-01

    Tese de mestrado, Medicina dentária, Universidade de Lisboa, Faculdade de Medicina Dentária, 2014 Objetivo: Recorrendo ao teste de microtração, avaliar e comparar as forças adesivas em esmalte cortado de um sistema adesivo universal (Scotchbond Universal Adhesive, 3M ESPE, St. Paul, MN, USA) usado segundo as instruções do fabricante, nos modos etch-and-rinse e etch-and-dry. A hipótese nula testada é a de que não existem diferenças estatisticamente significativas nas forças de adesão ao esm...

  10. Large-aperture focusing of x rays with micropore optics using dry etching of silicon wafers.

    Science.gov (United States)

    Ezoe, Yuichiro; Moriyama, Teppei; Ogawa, Tomohiro; Kakiuchi, Takuya; Mitsuishi, Ikuyuki; Mitsuda, Kazuhisa; Aoki, Tatsuhiko; Morishita, Kohei; Nakajima, Kazuo

    2012-03-01

    Large-aperture focusing of Al K(α) 1.49 keV x-ray photons using micropore optics made from a dry-etched 4 in. (100 mm) silicon wafer is demonstrated. Sidewalls of the micropores are smoothed with high-temperature annealing to work as x-ray mirrors. The wafer is bent to a spherical shape to collect parallel x rays into a focus. Our result supports that this new type of optics allows for the manufacturing of ultralight-weight and high-performance x-ray imaging optics with large apertures at low cost. © 2012 Optical Society of America

  11. Improved photoluminescence efficiency in UV nanopillar light emitting diode structures by recovery of dry etching damage.

    Science.gov (United States)

    Jeon, Dae-Woo; Jang, Lee-Woon; Jeon, Ju-Won; Park, Jae-Woo; Song, Young Ho; Jeon, Seong-Ran; Ju, Jin-Woo; Baek, Jong Hyeob; Lee, In-Hwan

    2013-05-01

    In this study, we have fabricated 375-nm-wavelength InGaN/AlInGaN nanopillar light emitting diodes (LED) structures on c-plane sapphire. A uniform and highly vertical nanopillar structure was fabricated using self-organized Ni/SiO2 nano-size mask by dry etching method. To minimize the dry etching damage, the samples were subjected to high temperature annealing with subsequent chemical passivation in KOH solution. Prior to annealing and passivation the UV nanopillar LEDs showed the photoluminescence (PL) efficiency about 2.5 times higher than conventional UV LED structures which is attributed to better light extraction efficiency and possibly some improvement of internal quantum efficiency due to partially relieved strain. Annealing alone further increased the PL efficiency by about 4.5 times compared to the conventional UV LEDs, while KOH passivation led to the overall PL efficiency improvement by more than 7 times. Combined results of Raman spectroscopy and X-ray photoelectron spectroscopy (XPS) suggest that annealing decreases the number of lattice defects and relieves the strain in the surface region of the nanopillars whereas KOH treatment removes the surface oxide from nanopillar surface.

  12. A Study of Parameters Related to the Etch Rate for a Dry Etch Process Using NF3/O2 and SF6/O2

    Directory of Open Access Journals (Sweden)

    Seon-Geun Oh

    2014-01-01

    Full Text Available The characteristics of the dry etching of SiNx:H thin films for display devices using SF6/O2 and NF3/O2 were investigated using a dual-frequency capacitively coupled plasma reactive ion etching (CCP-RIE system. The investigation was carried out by varying the RF power ratio (13.56 MHz/2 MHz, pressure, and gas flow ratio. For the SiNx:H film, the etch rates obtained using NF3/O2 were higher than those obtained using SF6/O2 under various process conditions. The relationships between the etch rates and the usual monitoring parameters—the optical emission spectroscopy (OES intensity of atomic fluorine (685.1 nm and 702.89 nm and the voltages VH and VL—were investigated. The OES intensity data indicated a correlation between the bulk plasma density and the atomic fluorine density. The etch rate was proportional to the product of the OES intensity of atomic fluorine (I(F and the square root of the voltages (Vh+Vl on the assumption that the velocity of the reactive fluorine was proportional to the square root of the voltages.

  13. Dry Phosphorus silicate glass etching and surface conditioning and cleaning for multi-crystalline silicon solar cell processing

    International Nuclear Information System (INIS)

    Kagilik, Ahmed S.

    2014-01-01

    As an alternative to the wet chemical etching method, dry chemical etching processes for Phosphorus silicate glass [PSG} layer removal using Trifluormethane/Sulfur Hexafluoride (CHF 3 / SF 6 ) gas mixture in commercial silicon-nitride plasma enhanced chemical vapour deposition (SiN-PECVD) system is applied. The dependence of the solar cell performance on the etching temperature is investigated and optimized. It is found that the SiN-PECVD system temperature variation has a significant impact on the whole solar cell characteristics. A dry plasma cleaning treatment of the Si wafer surface after the PSG removal step is also investigated and developed. The cleaning step is used to remove the polymer film which is formed during the PSG etching using both oxygen and hydrogen gases. By applying an additional cleaning step, the polymer film deposited on the silicon wafer surface after PSG etching is eliminated. The effect of different plasma cleaning conditions on solar cell performance is investigated. After optimization of the plasma operating conditions, the performance of the solar cell is improved and the overall gain in efficiency of 0.6% absolute is yielded compared to a cell without any further cleaning step. On the other hand, the best solar cell characteristics can reach values close to that achieved by the conventional wet chemical etching processes demonstrating the effectiveness of the additional O 2 /H 2 post cleaning treatment.(author)

  14. ICP dry etching ITO to improve the performance of GaN-based LEDs

    International Nuclear Information System (INIS)

    Meng Lili; Chen Yixin; Ma Li; Liu Zike; Shen Guangdi

    2011-01-01

    In order to improve the light efficiency of the conventional GaN-based light-emitting diodes (LEDs), the indium tin oxide (ITO) film is introduced as the current spreading layer and the light anti-reflecting layer on the p-GaN surface. There is a big problem with the ITO thin film's corrosion during the electrode preparation. In this paper, at least, the edge of the ITO film was lateral corroded 3.5 μm width, i.e. 6.43%-1/3 of ITO film's area. An optimized simple process, i.e. inductively couple plasma (ICP), was introduced to solve this problem. The ICP process not only prevented the ITO film from lateral corrosion, but also improved the LED's light intensity and device performance. The edge of the ITO film by ICP dry etching is steep, and the areas of ITO film are whole. Compared with the chip by wet etching, the areas of light emission increase by 6.43% at least and the chip's lop values increase by 45.9% at most. (semiconductor devices)

  15. Dry etching of new phase-change material Al1.3Sb3Te in CF4/Ar plasma

    International Nuclear Information System (INIS)

    Zhang Xu; Rao Feng; Liu Bo; Peng Cheng; Zhou Xilin; Yao Dongning; Guo Xiaohui; Song Sannian; Wang Liangyong; Cheng Yan; Wu Liangcai; Song Zhitang; Feng Songlin

    2012-01-01

    The dry etching characteristic of Al 1.3 Sb 3 Te film was investigated by using a CF 4 /Ar gas mixture. The experimental control parameters were gas flow rate into the chamber, CF 4 /Ar ratio, the O 2 addition, the chamber background pressure, and the incident RF power applied to the lower electrode. The total flow rate was 50 sccm and the behavior of etch rate of Al 1.3 Sb 3 Te thin films was investigated as a function of the CF 4 /Ar ratio, the O 2 addition, the chamber background pressure, and the incident RF power. Then the parameters were optimized. The fast etch rate was up to 70.8 nm/min and a smooth surface was achieved using optimized etching parameters of CF 4 concentration of 4%, power of 300 W and pressure of 80 mTorr.

  16. Characteristics of the Fiber Laser Sensor System Based on Etched-Bragg Grating Sensing Probe for Determination of the Low Nitrate Concentration in Water.

    Science.gov (United States)

    Pham, Thanh Binh; Bui, Huy; Le, Huu Thang; Pham, Van Hoi

    2016-12-22

    The necessity of environmental protection has stimulated the development of many kinds of methods allowing the determination of different pollutants in the natural environment, including methods for determining nitrate in source water. In this paper, the characteristics of an etched fiber Bragg grating (e-FBG) sensing probe-which integrated in fiber laser structure-are studied by numerical simulation and experiment. The proposed sensor is demonstrated for determination of the low nitrate concentration in a water environment. Experimental results show that this sensor could determine nitrate in water samples at a low concentration range of 0-80 ppm with good repeatability, rapid response, and average sensitivity of 3.5 × 10 -3 nm/ppm with the detection limit of 3 ppm. The e-FBG sensing probe integrated in fiber laser demonstrates many advantages, such as a high resolution for wavelength shift identification, high optical signal-to-noise ratio (OSNR of 40 dB), narrow bandwidth of 0.02 nm that enhanced accuracy and precision of wavelength peak measurement, and capability for optical remote sensing. The obtained results suggested that the proposed e-FBG sensor has a large potential for the determination of low nitrate concentrations in water in outdoor field work.

  17. Characteristics of the Fiber Laser Sensor System Based on Etched-Bragg Grating Sensing Probe for Determination of the Low Nitrate Concentration in Water

    Directory of Open Access Journals (Sweden)

    Thanh Binh Pham

    2016-12-01

    Full Text Available The necessity of environmental protection has stimulated the development of many kinds of methods allowing the determination of different pollutants in the natural environment, including methods for determining nitrate in source water. In this paper, the characteristics of an etched fiber Bragg grating (e-FBG sensing probe—which integrated in fiber laser structure—are studied by numerical simulation and experiment. The proposed sensor is demonstrated for determination of the low nitrate concentration in a water environment. Experimental results show that this sensor could determine nitrate in water samples at a low concentration range of 0–80 ppm with good repeatability, rapid response, and average sensitivity of 3.5 × 10−3 nm/ppm with the detection limit of 3 ppm. The e-FBG sensing probe integrated in fiber laser demonstrates many advantages, such as a high resolution for wavelength shift identification, high optical signal-to-noise ratio (OSNR of 40 dB, narrow bandwidth of 0.02 nm that enhanced accuracy and precision of wavelength peak measurement, and capability for optical remote sensing. The obtained results suggested that the proposed e-FBG sensor has a large potential for the determination of low nitrate concentrations in water in outdoor field work.

  18. Effect of different air-drying time on the microleakage of single-step self-etch adhesives

    OpenAIRE

    Moosavi, Horieh; Forghani, Maryam; Managhebi, Esmatsadat

    2013-01-01

    Objectives This study evaluated the effect of three different air-drying times on microleakage of three self-etch adhesive systems. Materials and Methods Class I cavities were prepared for 108 extracted sound human premolars. The teeth were divided into three main groups based on three different adhesives: Opti Bond All in One (OBAO), Clearfil S3 Bond (CSB), Bond Force (BF). Each main group divided into three subgroups regarding the air-drying time: without application of air stream...

  19. Effect of different air-drying time on the microleakage of single-step self-etch adhesives

    Directory of Open Access Journals (Sweden)

    Horieh Moosavi

    2013-05-01

    Full Text Available Objectives This study evaluated the effect of three different air-drying times on microleakage of three self-etch adhesive systems. Materials and Methods Class I cavities were prepared for 108 extracted sound human premolars. The teeth were divided into three main groups based on three different adhesives: Opti Bond All in One (OBAO, Clearfil S3 Bond (CSB, Bond Force (BF. Each main group divided into three subgroups regarding the air-drying time: without application of air stream, following the manufacturer's instruction, for 10 sec more than manufacturer's instruction. After completion of restorations, specimens were thermocycled and then connected to a fluid filtration system to evaluate microleakage. The data were statistically analyzed using two-way ANOVA and Tukey-test (α = 0.05. Results The microleakage of all adhesives decreased when the air-drying time increased from 0 sec to manufacturer's instruction (p < 0.001. The microleakage of BF reached its lowest values after increasing the drying time to 10 sec more than the manufacturer's instruction (p < 0.001. Microleakage of OBAO and CSB was significantly lower compared to BF in all three drying time (p < 0.001. Conclusions Increasing in air-drying time of adhesive layer in one-step self-etch adhesives caused reduction of microleakage, but the amount of this reduction may be dependent on the adhesive components of self-etch adhesives.

  20. Fabrication of high quality GaN nanopillar arrays by dry and wet chemical etching

    OpenAIRE

    Paramanik, Dipak; Motayed, Abhishek; King, Matthew; Ha, Jong-Yoon; Kryluk, Sergi; Davydov, Albert V.; Talin, Alec

    2013-01-01

    We study strain relaxation and surface damage of GaN nanopillar arrays fabricated using inductively coupled plasma (ICP) etching and post etch wet chemical treatment. We controlled the shape and surface damage of such nanopillar structures through selection of etching parameters. We compared different substrate temperatures and different chlorine-based etch chemistries to fabricate high quality GaN nanopillars. Room temperature photoluminescence and Raman scattering measurements were carried ...

  1. Effect of moisture and drying time on the bond strength of the one-step self-etching adhesive system

    Directory of Open Access Journals (Sweden)

    Yoon Lee

    2012-08-01

    Full Text Available Objectives To investigate the effect of dentin moisture degree and air-drying time on dentin-bond strength of two different one-step self-etching adhesive systems. Materials and Methods Twenty-four human third molars were used for microtensile bond strength testing of G-Bond and Clearfil S3 Bond. The dentin surface was either blot-dried or air-dried before applying these adhesive agents. After application of the adhesive agent, three different air drying times were evaluated: 1, 5, and 10 sec. Composite resin was build up to 4 mm thickness and light cured for 40 sec with 2 separate layers. Then the tooth was sectioned and trimmed to measure the microtensile bond strength using a universal testing machine. The measured bond strengths were analyzed with three-way ANOVA and regression analysis was done (p = 0.05. Results All three factors, materials, dentin wetness and air drying time, showed significant effect on the microtensile bond strength. Clearfil S3 Bond, dry dentin surface and 10 sec air drying time showed higher bond strength. Conclusions Within the limitation of this experiment, air drying time after the application of the one-step self-etching adhesive agent was the most significant factor affecting the bond strength, followed by the material difference and dentin moisture before applying the adhesive agent.

  2. Comparison of damage introduced into GaN/AlGaN/GaN heterostructures using selective dry etch recipes

    International Nuclear Information System (INIS)

    Green, R T; Luxmoore, I J; Houston, P A; Ranalli, F; Wang, T; Parbrook, P J; Uren, M J; Wallis, D J; Martin, T

    2009-01-01

    A SiCl 4 /SF 6 dry etch plasma recipe is presented giving a selectivity of 14:1 between GaN and AlGaN. Using a leakage test structure, which enables bulk and surface leakage components to be identified independently, the optimized recipe is compared to an un-etched sample and devices recessed using a Cl 2 /Ar/O 2 -based plasma chemistry. Devices etched using the SiCl 4 /SF 6 recipe demonstrated reduced bulk and surface leakage currents when operated over a wide range of temperatures. Consequently the SiCl 4 /SF 6 recipe is identified as most suitable for the fabrication of gate recessed AlGaN/GaN HEMTs

  3. Dry-plasma-free chemical etch technique for variability reduction in multi-patterning (Conference Presentation)

    Science.gov (United States)

    Kal, Subhadeep; Mohanty, Nihar; Farrell, Richard A.; Franke, Elliott; Raley, Angelique; Thibaut, Sophie; Pereira, Cheryl; Pillai, Karthik; Ko, Akiteru; Mosden, Aelan; Biolsi, Peter

    2017-04-01

    Scaling beyond the 7nm technology node demands significant control over the variability down to a few angstroms, in order to achieve reasonable yield. For example, to meet the current scaling targets it is highly desirable to achieve sub 30nm pitch line/space features at back-end of the line (BEOL) or front end of line (FEOL); uniform and precise contact/hole patterning at middle of line (MOL). One of the quintessential requirements for such precise and possibly self-aligned patterning strategies is superior etch selectivity between the target films while other masks/films are exposed. The need to achieve high etch selectivity becomes more evident for unit process development at MOL and BEOL, as a result of low density films choices (compared to FEOL film choices) due to lower temperature budget. Low etch selectivity with conventional plasma and wet chemical etch techniques, causes significant gouging (un-intended etching of etch stop layer, as shown in Fig 1), high line edge roughness (LER)/line width roughness (LWR), non-uniformity, etc. In certain circumstances this may lead to added downstream process stochastics. Furthermore, conventional plasma etches may also have the added disadvantage of plasma VUV damage and corner rounding (Fig. 1). Finally, the above mentioned factors can potentially compromise edge placement error (EPE) and/or yield. Therefore a process flow enabled with extremely high selective etches inherent to film properties and/or etch chemistries is a significant advantage. To improve this etch selectivity for certain etch steps during a process flow, we have to implement alternate highly selective, plasma free techniques in conjunction with conventional plasma etches (Fig 2.). In this article, we will present our plasma free, chemical gas phase etch technique using chemistries that have high selectivity towards a spectrum of films owing to the reaction mechanism ( as shown Fig 1). Gas phase etches also help eliminate plasma damage to the

  4. Response of murine bone marrow-derived mesenchymal stromal cells to dry-etched porous silicon scaffolds.

    Science.gov (United States)

    Hajj-Hassan, Mohamad; Khayyat-Kholghi, Maedeh; Wang, Huifen; Chodavarapu, Vamsy; Henderson, Janet E

    2011-11-01

    Porous silicon shows great promise as a bio-interface material due to its large surface to volume ratio, its stability in aqueous solutions and to the ability to precisely regulate its pore characteristics. In the current study, porous silicon scaffolds were fabricated from single crystalline silicon wafers by a novel xenon difluoride dry etching technique. This simplified dry etch fabrication process allows selective formation of porous silicon using a standard photoresist as mask material and eliminates the post-formation drying step typically required for the wet etching techniques, thereby reducing the risk of damaging the newly formed porous silicon. The porous silicon scaffolds supported the growth of primary cultures of bone marrow derived mesenchymal stromal cells (MSC) plated at high density for up to 21 days in culture with no significant loss of viability, assessed using Alamar Blue. Scanning electron micrographs confirmed a dense lawn of cells at 9 days of culture and the presence of MSC within the pores of the porous silicon scaffolds. Copyright © 2011 Wiley Periodicals, Inc.

  5. Modeling of block copolymer dry etching for directed self-assembly lithography

    Science.gov (United States)

    Belete, Zelalem; Baer, Eberhard; Erdmann, Andreas

    2018-03-01

    Directed self-assembly (DSA) of block copolymers (BCP) is a promising alternative technology to overcome the limits of patterning for the semiconductor industry. DSA exploits the self-assembling property of BCPs for nano-scale manufacturing and to repair defects in patterns created during photolithography. After self-assembly of BCPs, to transfer the created pattern to the underlying substrate, selective etching of PMMA (poly (methyl methacrylate)) to PS (polystyrene) is required. However, the etch process to transfer the self-assemble "fingerprint" DSA patterns to the underlying layer is still a challenge. Using combined experimental and modelling studies increases understanding of plasma interaction with BCP materials during the etch process and supports the development of selective process that form well-defined patterns. In this paper, a simple model based on a generic surface model has been developed and an investigation to understand the etch behavior of PS-b-PMMA for Ar, and Ar/O2 plasma chemistries has been conducted. The implemented model is calibrated for etch rates and etch profiles with literature data to extract parameters and conduct simulations. In order to understand the effect of the plasma on the block copolymers, first the etch model was calibrated for polystyrene (PS) and poly (methyl methacrylate) (PMMA) homopolymers. After calibration of the model with the homopolymers etch rate, a full Monte-Carlo simulation was conducted and simulation results are compared with the critical-dimension (CD) and selectivity of etch profile measurement. In addition, etch simulations for lamellae pattern have been demonstrated, using the implemented model.

  6. The memory characteristics of submicron feature-size PZT capacitors with PtOx top electrode by using dry-etching

    International Nuclear Information System (INIS)

    Huang, C.-K.; Wang, C.-C.; Wu, T.-B.

    2007-01-01

    Dry etching and its effect on the characteristics of submicron feature-size PbZr 1-x Ti x O 3 (PZT) capacitors with PtO x top electrode were investigated. The photoresist (PR)-masked PtO x films were etched by an Ar/(20%)Cl 2 /O 2 helicon wave plasma. A fence-free pattern with a significantly high etch rate and sidewall slope was obtained by the addition of O 2 into the etching gas mixture, due to the chemical instability of PtO x and the formation of a PtO 2 passivation layer to suppress redeposition of the etch by-products on the etched surface. The patterned PtO x electrode can be further used as a hard mask for etching the PZT film, subsequently, with the gas mixture of Ar, CF 4 and O 2 . A high etching rate of PZT and a good etching selectivity to PtO x can be obtained at 30% O 2 addition into the Ar/(50%)CF 4 plasma. The etched capacitors have a steep, 72 0 , sidewall angle with a clean surface. Moreover, the addition of O 2 into the etching gas can well preserve the properties and the fatigue endurance of PtO x /PZT capacitors

  7. Dry etching of LaNiO3 thin films using inductively coupled plasma

    International Nuclear Information System (INIS)

    Kim, Gwan-Ha; Kim, Dong-Pyo; Kim, Kyoung-Tae; Kim, Chang-Il; Lee, Cheol-In; Kim, Tae-Hyung

    2006-01-01

    The etching characteristics of LaNiO 3 (LNO) thin films and SiO 2 in Cl 2 /Ar plasma were investigated. LNO etch rates decreased with increasing Cl 2 fraction in Ar plasma and the working pressure. Langmuir probe measurement showed a noticeable influence of Cl 2 /Ar mixing ratio on electron temperature, electron density, and ion current density. The modeling of volume kinetics for charged particles and OES measurements for neutral atoms indicated monotonous changes of both densities and fluxes of active species such as chlorine atoms and positive ions. The LNO etch rate behavior may be explained by physical mechanisms

  8. Dry Etching of Copper Phthalocyanine Thin Films: Effects on Morphology and Surface Stoichiometry

    Directory of Open Access Journals (Sweden)

    Michael J. Brett

    2012-08-01

    Full Text Available We investigate the evolution of copper phthalocyanine thin films as they are etched with argon plasma. Significant morphological changes occur as a result of the ion bombardment; a planar surface quickly becomes an array of nanopillars which are less than 20 nm in diameter. The changes in morphology are independent of plasma power, which controls the etch rate only. Analysis by X-ray photoelectron spectroscopy shows that surface concentrations of copper and oxygen increase with etch time, while carbon and nitrogen are depleted. Despite these changes in surface stoichiometry, we observe no effect on the work function. The absorbance and X-ray diffraction spectra show no changes other than the peaks diminishing with etch time. These findings have important implications for organic photovoltaic devices which seek nanopillar thin films of metal phthalocyanine materials as an optimal structure.

  9. Performance improvements of binary diffractive structures via optimization of the photolithography and dry etch processes

    Science.gov (United States)

    Welch, Kevin; Leonard, Jerry; Jones, Richard D.

    2010-08-01

    Increasingly stringent requirements on the performance of diffractive optical elements (DOEs) used in wafer scanner illumination systems are driving continuous improvements in their associated manufacturing processes. Specifically, these processes are designed to improve the output pattern uniformity of off-axis illumination systems to minimize degradation in the ultimate imaging performance of a lithographic tool. In this paper, we discuss performance improvements in both photolithographic patterning and RIE etching of fused silica diffractive optical structures. In summary, optimized photolithographic processes were developed to increase critical dimension uniformity and featuresize linearity across the substrate. The photoresist film thickness was also optimized for integration with an improved etch process. This etch process was itself optimized for pattern transfer fidelity, sidewall profile (wall angle, trench bottom flatness), and across-wafer etch depth uniformity. Improvements observed with these processes on idealized test structures (for ease of analysis) led to their implementation in product flows, with comparable increases in performance and yield on customer designs.

  10. Dry etching of ferroelectric Bi4-xEuxTi3O12 (BET) thin films

    International Nuclear Information System (INIS)

    Lim, Kyu-Tae; Kim, Kyoung-Tae; Kim, Dong-Pyo; Kim, Chang-Il

    2004-01-01

    Bi 4-x Eu x Ti 3 O 12 (BET) thin films were etched by using a inductively coupled Cl 2 /Ar plasma. We obtained a maximum etch rate of 69 nm/min at a gas mixing ratio of Cl 2 (20 %)/Ar (80 %). This result suggests that an effective method for BET etching is chemically assisted physical etching. With increasing coil RF power, the plasma density increases so that the increased reactive free radicals and ions enhance the etch rates of BET, Pt, and SiO 2 . As the dc-bias voltage is increased, the increased ion energy leads to an increased etch rate of BET films. From X-ray photoelectron spectroscopy, the intensities of the Bi-O, the Eu-O, and the Ti-O peaks change with increasing Cl 2 concentration. For a pure Ar plasma, the peak associated with the oxygen-metal (O-M: TiO 2 , Bi 2 O 3 , Eu 2 O 3 ) bond seems to disappear while the pure oxygen peak does not appear. After the BET thin films is etched by using a Cl 2 /Ar plasma, the peak associated with the O-M bond increases slowly, but more quickly than the peak associated with pure oxygen atoms, due to a decrease in the Ar-ion bombardment. These results seem to indicate that Bi and Eu react little with Cl atoms and are removed predominantly by argon-ion bombardment. Also, Ti reacts little with Cl radicals and is mainly removed by chemically assisted physical etching.

  11. Effect of air-drying time of single-application self-etch adhesives on dentin bond strength.

    Science.gov (United States)

    Chiba, Yasushi; Yamaguchi, Kanako; Miyazaki, Masashi; Tsubota, Keishi; Takamizawa, Toshiki; Moore, B Keith

    2006-01-01

    This study examined the effect of air-drying time of adhesives on the dentin bond strength of several single-application self-etch adhesive systems. The adhesive/resin composite combinations used were: Adper Prompt L-Pop/Filtek Z250 (AP), Clearfil Tri-S Bond/Clearfil AP-X (CT), Fluoro Bond Shake One/Beautifil (FB), G-Bond/Gradia Direct (GB) and One-Up Bond F Plus/Palfique Estelite (OF). Bovine mandibular incisors were mounted in self-curing resin and wet ground with #600 SiC to expose labial dentin. Adhesives were applied according to each manufacturer's instructions followed by air-drying time for 0 (without air-drying), 5 and 10 seconds. After light irradiation of the adhesives, the resin composites were condensed into a mold (phi4x2 mm) and polymerized. Ten samples per test group were stored in 37 degrees C distilled water for 24 hours; they were then shear tested at a crosshead speed of 1.0 mm/minute. One-way ANOVA followed by Tukey's HSD tests (alpha = 0.05) were done. FE-SEM observations of the resin/dentin interface were also conducted. Dentin bond strength varied with the different air drying times and ranged from 5.8 +/- 2.4 to 13.9 +/- 2.8 MPa for AP, 4.9 +/- 1.5 to 17.1 +/- 2.3 MPa for CT, 7.9 +/- 2.8 to 13.8 +/- 2.4 MPa for FB, 3.7 +/- 1.4 to 13.4 +/- 1.2 MPa for GB and 4.6 +/- 2.1 to 13.7 +/- 2.6 MPa for OF. With longer air drying of adhesives, no significant changes in bond strengths were found for the systems used except for OF. Significantly lower bond strengths were obtained for the 10-second air-drying group for OF. From FE-SEM observations, gaps between the cured adhesive and resin composites were observed for the specimens without the air drying of adhesives except for OF. The data suggests that, with four of the single-application self-etch adhesive systems, air drying is essential to obtain adequate dentin bond strengths, but increased drying time does not significantly influence bond strength. For the other system studied, the bond strength

  12. Flux based modeling and simulation of dry etching for fabrication of silicon deep trench structures

    Energy Technology Data Exchange (ETDEWEB)

    Malik Rizwan [State Key Laboratory of Digital Manufacturing Equipment and technology, Huazhong University of Science and Technology, 1037 Luoyu road, Wuhan, China 43007 (China); Shi Tielin; Tang Zirong; Liu Shiyuan, E-mail: zirong@mail.hust.edu.cn, E-mail: rizwanmalik@smail.hust.edu.cn [Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, 1037 Luoyu road Wuhan, 430074 (China)

    2011-02-01

    Deep reactive ion etching (DRIE) process is a key growth for fabrication of micro-electromechanical system (MEMS) devices. Due to complexity of this process, including interaction of the process steps, full analytical modeling is complex. Plasma process holds deficiency of understanding because it is very easy to measure the results empirically. However, as device parameters shrink, this issue is more critical. In this paper, our process was modeled qualitatively based on 'High Density Plasma Etch Model'. Deep trench solutions of etch rate based on continuity equation were successfully generated first time through mathematical analysis. It was also proved that the product of fluorine and gas phase concentration in SF{sub 6} remains identical during both deposition and etching stages. The etching process was treated as a combination of isotropic, directional and angle-dependent component parts. It exploited a synergistic balance of chemical as well as physical etching for promoting silicon trenches and high aspect ratio structures. Simulations were performed for comprehensive analysis of fluxes coming towards the surface during chemical reaction of gas. It is observed that near the surface, the distribution of the arrival flux follows a cosine distribution. Our model is feasible to analyze various parameters like gas delivery, reactor volume and temperature that help to assert large scale effects and to optimize equipment design.

  13. Studies of the confinement at laser-induced backside dry etching using infrared nanosecond laser pulses

    Science.gov (United States)

    Ehrhardt, M.; Lorenz, P.; Bayer, L.; Han, B.; Zimmer, K.

    2018-01-01

    In the present study, laser-induced backside etching of SiO2 at an interface to an organic material using laser pulses with a wavelength of λ = 1064 nm and a pulse length of τ = 7 ns have been performed in order to investigate selected processes involved in etching of the SiO2 at confined ablation conditions with wavelengths well below the band gap of SiO2. Therefore, in between the utilized metallic absorber layer and the SiO2 surface, a polymer interlayer with a thickness between 20 nm to 150 nm was placed with the aim, to separate the laser absorption process in the metallic absorber layer from the etching process of the SiO2 surface due to the provided organic interlayer. The influence of the confinement of the backside etching process was analyzed by the deposition of different thick polymer layers on top of the metallic absorber layer. In particular, it was found that the SiO2 etching depth decreases with higher polymer interlayer thickness. However, the etching depth increases with increasing the confinement layer thickness. SEM images of the laser processed areas show that the absorber and confinement layers are ruptured from the sample surface without showing melting, and suggesting a lift off process of these films. The driving force for the layers lift off and the etching of the SiO2 is probably the generated laser-induce plasma from the confined ablation that provides the pressure for lift off, the high temperatures and reactive organic species that can chemically attack the SiO2 surface at these conditions.

  14. Dry etching of MgCaO gate dielectric and passivation layers on GaN

    International Nuclear Information System (INIS)

    Hlad, M.; Voss, L.; Gila, B.P.; Abernathy, C.R.; Pearton, S.J.; Ren, F.

    2006-01-01

    MgCaO films grown by rf plasma-assisted molecular beam epitaxy and capped with Sc 2 O 3 are promising candidates as surface passivation layers and gate dielectrics on GaN-based high electron mobility transistors (HEMTs) and metal-oxide semiconductor HEMTs (MOS-HEMTs), respectively. Two different plasma chemistries were examined for etching these thin films on GaN. Inductively coupled plasmas of CH 4 /H 2 /Ar produced etch rates only in the range 20-70 A/min, comparable to the Ar sputter rates under the same conditions. Similarly slow MgCaO etch rates (∼100 A/min) were obtained with Cl 2 /Ar discharges under the same conditions, but GaN showed rates almost an order of magnitude higher. The MgCaO removal rates are limited by the low volatilities of the respective etch products. The CH 4 /H 2 /Ar plasma chemistry produced a selectivity of around 2 for etching the MgCaO with respect to GaN

  15. Influence of warm air-drying on enamel bond strength and surface free-energy of self-etch adhesives.

    Science.gov (United States)

    Shiratsuchi, Koji; Tsujimoto, Akimasa; Takamizawa, Toshiki; Furuichi, Tetsuya; Tsubota, Keishi; Kurokawa, Hiroyasu; Miyazaki, Masashi

    2013-08-01

    We examined the effect of warm air-drying on the enamel bond strengths and the surface free-energy of three single-step self-etch adhesives. Bovine mandibular incisors were mounted in self-curing resin and then wet ground with #600 silicon carbide (SiC) paper. The adhesives were applied according to the instructions of the respective manufacturers and then dried in a stream of normal (23°C) or warm (37°C) air for 5, 10, and 20 s. After visible-light irradiation of the adhesives, resin composites were condensed into a mold and polymerized. Ten samples per test group were stored in distilled water at 37°C for 24 h and then the bond strengths were measured. The surface free-energies were determined by measuring the contact angles of three test liquids placed on the cured adhesives. The enamel bond strengths varied according to the air-drying time and ranged from 15.8 to 19.1 MPa. The trends for the bond strengths were different among the materials. The value of the γS⁺ component increased slightly when drying was performed with a stream of warm air, whereas that of the γS⁻ component decreased significantly. These data suggest that warm air-drying is essential to obtain adequate enamel bond strengths, although increasing the drying time did not significantly influence the bond strength. © 2013 Eur J Oral Sci.

  16. Cradle-to-gate life cycle assessment of the dry etching step in the manufacturing of photovoltaic cells

    Directory of Open Access Journals (Sweden)

    Otto Andersen

    2014-11-01

    Full Text Available A new photovoltaic silicon crystalline solar cell dry chemical etching process (DCEP is developed. It is an alternative to the current State-of-the-Art (SoA wet chemical etching process (WCEP, associated with relatively large environmental loadings in the form of high water consumption and emissions of greenhouse gases with high Global Warming Potential (GWP. In order to compare the environmental impacts of DCEP to the corresponding impacts from WCEP, a comparative attributional life cycle assessment (LCA is conducted. From the LCA it can be concluded that the DCEP will lead to 86% reduction in water consumption compared to WCEP (acidic, and 89% reduction compared to WCEP (alkaline. The emissions of greenhouse gases, as expressed by the GWP100 indicator of the etching step, are also reduced with 63% and 20% respectively, when compared with current SoA acidic and alkaline WCEP. The toxicity impacts are also assessed to be lower for the DCEP compared to WCEP technologies, although the uncertainty is relatively high for the applied toxicity indicators. All in all, DCEP can reduce the CO2eq emissions of solar photovoltaic systems production by 5-10%.

  17. Effects of 3D microlens transfer into fused silica substrate by CF{sub 4}/O{sub 2} dry etching

    Energy Technology Data Exchange (ETDEWEB)

    Grigaliūnas, Viktoras, E-mail: Viktoras.Grigaliunas@ktu.lt [Institute of Materials Science, Kaunas University of Technology, Barsausko 59, LT-51423 Kaunas (Lithuania); Jucius, Dalius; Lazauskas, Algirdas; Andrulevičius, Mindaugas; Sakaliūnienė, Jolita; Abakevičienė, Brigita; Kopustinskas, Vitoldas [Institute of Materials Science, Kaunas University of Technology, Barsausko 59, LT-51423 Kaunas (Lithuania); Smetona, Saulius [Qorvo, 7628 Thorndike Road Greensboro, NC 27409 United States (United States); Tamulevičius, Sigitas [Institute of Materials Science, Kaunas University of Technology, Barsausko 59, LT-51423 Kaunas (Lithuania)

    2017-01-30

    Highlights: • The etching rate of PMMA is dependent on the plasma etching time. • The etching rate ratio between PMMA and fused silica vary during plasma treatment. • The etching rate ratio variation must be assessed during the microlens design phase. - Abstract: Nowadays, 3D microoptical elements find a variety of applications from light emitting diodes and household appliances to precise medical endoscopes. Such elements, fabricated in a fused silica substrate by combining 3D e-beam patterning and dry etching, can be used as a mold for the high throughput replication in polymeric materials by UV nanoimprint technique. Flexible and precise control of 3D shape in the resist layer can be achieved by e-beam patterning, but it is also very important to know peculiarities of 3D pattern transfer from resist layer into the fused silica substrate. This paper reports on the effects of PMMA 3D microlens pattern transfer into fused silica substrate by CF{sub 4}/O{sub 2} dry etching. It is demonstrated that etching rate ratio between PMMA and fused silica changes during plasma treatment. Thus, the resulting shape of transferred 3D profile is different from the shape in PMMA and this variation must be assessed during the design phase.

  18. Experimental and theoretical study of bragg-Fresnel optics etched on multilayer structures. Application: lenses for X-Ray imaging; Etude experimentale et theorique d`optiques de bragg-Fresnel gravees sur miroirs interferentiels multicouches. Application: lentilles pour l`imagerie X

    Energy Technology Data Exchange (ETDEWEB)

    Soullie, G.

    1996-10-01

    This work concerns the study of a new type of X-ray focusing optics known as Bragg-Fresnel lenses developed for imaging in the X and X-UV range. These optics, etched on multilayer structure, combine the focusing properties of zone plate with the Bragg reflection of multilayer used like support. Using synchrotron sources and a plasma source produced by a laser, we tested the efficiency and the spatial resolution of these lenses. With a monochromatic beam, we first obtained the image of a object by using the first order diffraction of an elliptical off-axis Bragg-Fresnel lens. By using only one part of a lens, the superposition of different diffraction orders in focal plane can be avoided, thus improving the image contrast. In order to evaluate the chromatic aberrations of these lenses, we have summed on the same image, three exposures at different energies in the band pass of the multilayer. To reduce these kind of aberrations, we used a system composed of two off-axis lenses. To simplify the alignment, we tested an elliptical off-axis lens associated with a lamellar grating. Thus we are able to validate the theoretical approximation of an off-axis Bragg-Fresnel lens to a variable spaced grating. Finally, to show the perturbation brought by the zeroth order, we successively imaged a laser plasma source with a centred and an off-axis elliptical lenses. As with the synchrotron source, a set of images of a test object enabled us to improve the spatial resolution. (author).

  19. Dry Etch Black Silicon with Low Surface Damage: Effect of Low Capacitively Coupled Plasma Power

    DEFF Research Database (Denmark)

    Iandolo, Beniamino; Plakhotnyuk, Maksym; Gaudig, Maria

    2017-01-01

    Black silicon fabricated by reactive ion etch (RIE) is promising for integration into silicon solar cells thanks to its excellent light trapping ability. However, intensive ion bombardment during the RIE induces surface damage, which results in enhanced surface recombination velocity. Here, we pr...... carrier lifetime thanks to reduced ion energy. Surface passivation using atomic layer deposition of Al2O3 improves the effective lifetime to 7.5 ms and 0.8 ms for black silicon n- and p-type wafers, respectively.......Black silicon fabricated by reactive ion etch (RIE) is promising for integration into silicon solar cells thanks to its excellent light trapping ability. However, intensive ion bombardment during the RIE induces surface damage, which results in enhanced surface recombination velocity. Here, we...... present a RIE optimization leading to reduced surface damage while retaining excellent light trapping and low reflectivity. In particular, we demonstrate that the reduction of the capacitively coupled power during reactive ion etching preserves a reflectance below 1% and improves the effective minority...

  20. Effect of a Cooling Step Treatment on a High-Voltage GaN LED During ICP Dry Etching

    Science.gov (United States)

    Lin, Yen-Sheng; Hsiao, Sheng-Yu; Tseng, Chun-Lung; Shen, Ching-Hsing; Chiang, Jung-Sheng

    2017-02-01

    In this study, a lower dislocation density for a GaN surface and a reduced current path are observed at the interface of a SiO2 isolation sidewall, using high-resolution transmission electron microscopy. This is grown using a 3-min cooling step treatment during inductivity coupled plasma dry etching. The lower forward voltage is measured, the leakage current decreases from 53nA to 32nA, and the maximum output power increases from 354.8 W to 357.2 W for an input current of 30 mA. The microstructure and the optoelectronic properties of high-voltage light-emitting-diodes is proven to be affected by the cooling step treatment, which allows enough time to release the thermal energy of the SiO2 isolation well.

  1. Regrowth of InP by MOVPE on dry-etched heterostructures of InP-GaInAsP

    Energy Technology Data Exchange (ETDEWEB)

    Catana, A. (IBM Research Div., Zurich Research Lab., Rueschlikon (Switzerland)); Broom, R.F. (IBM Research Div., Zurich Research Lab., Rueschlikon (Switzerland)); Germann, R. (IBM Research Div., Zurich Research Lab., Rueschlikon (Switzerland)); Roentgen, P. (IBM Research Div., Zurich Research Lab., Rueschlikon (Switzerland))

    1993-04-01

    The MOVPE growth behavior of InP on masked and dry-etched ridges in InP/InGaAsP heterostructures grown on (001)-oriented InP substrates has been studied by scanning electron and transmission electron microscopy. It is found that the orientation of the ridges is critical for obtaining good planarization. For ridges oriented along the 100 direction, the growth is uniform and defect-free, leasing to a plane surface. In the orthogonal 110 direction 60 twins are nucleated adjacent to the walls of the ridge. The resultant high density of (111)/(001) facets enhances the growth rate in these regions, leading to projecting walls at the sides of the ridge. (orig.)

  2. Fabrication of ultrahigh density metal-cell-metal crossbar memory devices with only two cycles of lithography and dry-etch procedures

    KAUST Repository

    Zong, Baoyu; Goh, J. Y.; Guo, Zaibing; Luo, Ping; Wang, Chenchen; Qiu, Jinjun; Ho, Pin; Chen, Yunjie; Zhang, Mingsheng; Han, Guchang

    2013-01-01

    A novel approach to the fabrication of metal-cell-metal trilayer memory devices was demonstrated by using only two cycles of lithography and dry-etch procedures. The fabricated ultrahigh density crossbar devices can be scaled down to ≤70 nm in half

  3. Effect of additive gases and injection methods on chemical dry etching of silicon nitride, silicon oxynitride, and silicon oxide layers in F2 remote plasmas

    International Nuclear Information System (INIS)

    Yun, Y. B.; Park, S. M.; Kim, D. J.; Lee, N.-E.; Kim, K. S.; Bae, G. H.

    2007-01-01

    The authors investigated the effects of various additive gases and different injection methods on the chemical dry etching of silicon nitride, silicon oxynitride, and silicon oxide layers in F 2 remote plasmas. N 2 and N 2 +O 2 gases in the F 2 /Ar/N 2 and F 2 /Ar/N 2 /O 2 remote plasmas effectively increased the etch rate of the layers. The addition of direct-injected NO gas increased the etch rates most significantly. NO radicals generated by the addition of N 2 and N 2 +O 2 or direct-injected NO molecules contributed to the effective removal of nitrogen and oxygen in the silicon nitride and oxide layers, by forming N 2 O and NO 2 by-products, respectively, and thereby enhancing SiF 4 formation. As a result of the effective removal of the oxygen, nitrogen, and silicon atoms in the layers, the chemical dry etch rates were enhanced significantly. The process regime for the etch rate enhancement of the layers was extended at elevated temperature

  4. Growth of ZnO nanowire arrays directly onto Si via substrate topographical adjustments using both wet chemical and dry etching methods

    Energy Technology Data Exchange (ETDEWEB)

    Smith, Nathan A., E-mail: 523615@swansea.ac.uk [Centre for Nanohealth, Department of Physics, College of Science, University of Swansea, Singleton Park SA2 8PP United Kingdom (United Kingdom); Evans, Jon E.; Jones, Daniel R. [Multidisciplinary Nanotechnology Centre, College of Engineering, University of Swansea, Singleton Park, SA2 8PP United Kingdom (United Kingdom); Lord, Alex M. [Centre for Nanohealth, College of Engineering, University of Swansea, Singleton Park, SA2 8PP United Kingdom (United Kingdom); Wilks, S.P. [Centre for Nanohealth, Department of Physics, College of Science, University of Swansea, Singleton Park SA2 8PP United Kingdom (United Kingdom)

    2015-03-15

    Highlights: • Arrays of catalyst-free ZnO NWs have been grown by CVD without seed layers on Si. • Si surface topography was altered by substrate etching, resulting in NW growth. • XPS analysis shows growth is related to topography and not surface contamination. • Using e-beam lithography with etching, selective nanowire growth is demonstrated. • Electrical measurements on the arrays show improved conduction through the Si. - Abstract: Arrays of CVD catalyst-free ZnO nanowires have been successfully grown without the use of seed layers, using both wet chemical and dry plasma etching methods to alter surface topography. XPS analysis indicates that the NW growth cannot be attributed to a substrate surface chemistry and is therefore directly related to the substrate topography. These nanowires demonstrate structural and optical properties typical of CVD ZnO nanowires. Moreover, the NW arrays exhibit a degree of vertical alignment of less than 20° from the substrate normal. Electrical measurements suggest an improved conduction path through the substrate over seed layer grown nanowires. Furthermore, the etching technique was combined with e-beam lithography to produce high resolution selective area nanowire growth. The ability to pattern uniform nanowires using mature dry etch technology coupled with the increased charge transport through the substrate demonstrates the potential of this technique in the vertical integration of nanowire arrays.

  5. Fabrication of Light Extraction Efficiency of Organic Light-Emitting Diodes with 3D Aspherical Microlens by Using Dry Etching Process

    Directory of Open Access Journals (Sweden)

    Y. C. Chen

    2013-01-01

    Full Text Available organic light-emitting diode (OLED can enable a greater artificial contrast ratio and viewing angle compared to liquid crystal display (LCD because OLED pixels directly emit light. There is a shortcoming that the internal quantum efficiency can reach values close to 100%, but about 80% light disperses because of the difference among the refractive indices of the substrate, anode, indium tin oxide (ITO film, and air. In this paper, three dimensions aspherical microlens arrays (3D A-MLAs with substrate modifications are developed to simulate the optical luminous field by using FRED software. This study modified parameters of 3D A-MLAs such as the diameter, fill-factor, aspect ratio, dry etching parameters, and electroforming rates of microlens to improve the extraction efficiency of the OLED. In dry etching, not only the aspect ratio with better extraction rate can be obtained by reactive ion etching (RIE dry etching, but also an undercutting phenomenon can be avoided. The dimensions of 3D A-MLAs can be accurately controlled in the electroforming process used to make a nickel-cobalt (Ni-Co metal mold to achieve the designed dimensions. According to the measured results, the average luminance efficacy of the OLEDs with 3D A-MLAs can be enhanced.

  6. Iridium-coated micropore x-ray optics using dry etching of a silicon wafer and atomic layer deposition.

    Science.gov (United States)

    Ogawa, Tomohiro; Ezoe, Yuichiro; Moriyama, Teppei; Mitsuishi, Ikuyuki; Kakiuchi, Takuya; Ohashi, Takaya; Mitsuda, Kazuhisa; Putkonen, Matti

    2013-08-20

    To enhance x-ray reflectivity of silicon micropore optics using dry etching of silicon (111) wafers, iridium coating is tested by use of atomic layer deposition. An iridium layer is successfully formed on sidewalls of tiny micropores with a pore width of 20 μm and depth of 300 μm. The film thickness is ∼20  nm. An enhanced x-ray reflectivity compared to that of silicon is confirmed at Ti Kα 4.51 keV, for what we believe to be the first time, with this type of optics. Some discrepancies from a theoretical reflectivity curve of iridium-coated silicon are noticed at small incident angles <1.3°. When a geometrical shadowing effect due to occultation by a ridge existing on the sidewalls is taken into account, the observed reflectivity becomes well represented by the modified theoretical curve. An estimated surface micro roughness of ∼1  nm rms is consistent with atomic force microscope measurements of the sidewalls.

  7. Fabrication of ultrahigh density metal-cell-metal crossbar memory devices with only two cycles of lithography and dry-etch procedures

    KAUST Repository

    Zong, Baoyu

    2013-05-20

    A novel approach to the fabrication of metal-cell-metal trilayer memory devices was demonstrated by using only two cycles of lithography and dry-etch procedures. The fabricated ultrahigh density crossbar devices can be scaled down to ≤70 nm in half-pitch without alignment issues. Depending on the different dry-etch mechanisms in transferring high and low density nanopatterns, suitable dry-etch angles and methods are studied for the transfer of high density nanopatterns. Some novel process methods have also been developed to eliminate the sidewall and other conversion obstacles for obtaining high density of uniform metallic nanopatterns. With these methods, ultrahigh density trilayer crossbar devices (∼2 × 1010 bit cm-2-kilobit electronic memory), which are composed of built-in practical magnetoresistive nanocells, have been achieved. This scalable process that we have developed provides the relevant industries with a cheap means to commercially fabricate three-dimensional high density metal-cell-metal nanodevices. © 2013 IOP Publishing Ltd.

  8. Fabrication of combined-scale nano- and microfluidic polymer systems using a multilevel dry etching, electroplating and molding process

    DEFF Research Database (Denmark)

    Tanzi, Simone; Østergaard, Peter Friis; Matteucci, Marco

    2012-01-01

    Microfabricated single-cell capture and DNA stretching devices have been produced by injection molding. The fabrication scheme employed deep reactive ion etching in a silicon substrate, electroplating in nickel and molding in cyclic olefin polymer. This work proposes technical solutions to fabric......Microfabricated single-cell capture and DNA stretching devices have been produced by injection molding. The fabrication scheme employed deep reactive ion etching in a silicon substrate, electroplating in nickel and molding in cyclic olefin polymer. This work proposes technical solutions...

  9. Defect formation during chlorine-based dry etching and their effects on the electronic and structural properties of InP/InAsP quantum wells

    Energy Technology Data Exchange (ETDEWEB)

    Landesman, Jean-Pierre, E-mail: jean-pierre.landesman@univ-rennes1.fr [Institut de Physique de Rennes, CNRS-UMR 6251, Université Rennes 1, F-35042 Rennes (France); Jiménez, Juan; Torres, Alfredo [GdS Optronlab, Dpto. Fisica de la Materia Condensada, Universidad de Valladolid, 47011 Valladolid (Spain); Levallois, Christophe; Léger, Yoan; Beck, Alexandre [UMR FOTON, CNRS, INSA-Rennes, 20 avenue des buttes de Coësmes, F-35708 Rennes (France); Pommereau, Frédéric [III-V Lab, 1 Avenue Augustin Fresnel, RD128, F-91767 Palaiseau (France); Frigeri, Cesare [CNR-IMEM Istituto, Parco area delle Scienze 37/A, 43010 Parma (Italy); Rhallabi, Ahmed [Institut des Matériaux Jean-Rouxel, CNRS-UMR 6502, Université Nantes 1, F-44322 Nantes (France)

    2016-07-15

    The general objective is the investigation of the defects formed by dry etching tools such as those involved in the fabrication of photonic devices with III–V semiconductors. Emphasis is put on plasma exposures with chlorine-based chemistries. In addition to identifying these defects and describing their effects on the electro-optic and structural properties, the long-term target would be to predict the impact on the parameters of importance for photonic devices, and possibly include these predictions in their design. The work is first centered on explaining the experimental methodology. This methodology starts with the design and growth of a quantum well structure on indium phosphide, including ternary indium arsenide/phosphide quantum wells with graded arsenic/phosphor composition. These samples have then been characterized by luminescence methods (photo- and cathodoluminescence), high-resolution transmission electron microscopy, and secondary ion mass spectrometry. As one of the parameters of importance in this study, the authors have also included the doping level. The samples have been exposed to the etching plasmas for “short” durations that do not remove completely the quantum wells, but change their optical signature. No masking layer with lithographic features was involved as this work is purely oriented to study the interaction between the plasma and the samples. A significant difference in the luminescence spectra of the as-grown undoped and doped samples is observed. A mechanism describing the effect of the built-in electric field appearing as a consequence of the doping profile is proposed. This mechanism involves quantum confined Stark effect and electric-field induced carrier escape from the quantum wells. In the following part, the effects of exposure to various chlorine-based plasmas were explored. Differences are again observed between the undoped and doped samples, especially for chemistries containing silicon tetrachloride. Secondary ion

  10. Fiscal 2000 achievement report on the investigation of alternative gas system and process technologies for dry etching in electronic device manufacturing; 2000 nendo denshi device seizo process de shiyosuru etching gas no daitai gas system oyobi daitai process no kenkyu kaihatsu seika hokokusho

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    2001-03-01

    Efforts are made to develop technologies for saving PFC (perfluoro-compound) and conserving energy in semiconductor manufacturing processes, in particular, in the layer insulation film (SiO{sub 2}) dry etching process. Activities are conducted in the five fields of (1) research and development of technologies for reducing the amount of etching gas consumption, (2) development of a dry etching technology using alternative gas, (3) development of a dry etching technology using a low dielectric constant layer insulation film, (4) research and development of novel wiring structures and a method for fabricating the same, and (5) re-entrusted studies. Conducted in field (5) are studies of novel alternative gas - solid sources to substitute PFC, theory design technologies for low dielectric constant organic macromolecules, low dielectric constant material film fabrication by CVD (chemical vapor deposition), and technology for optical wiring inside chips. In field (2), studies are conducted of low GWP (global warming potential) alternative PFC gas aided etching and decomposition prevention technologies for reduction in PFC emissions, and it is made clear that C{sub 4}F{sub 6} performs excellently as an etchant. (NEDO)

  11. Dry fabrication of microdevices by the combination of focused ion beam and cryogenic deep reactive ion etching

    International Nuclear Information System (INIS)

    Chekurov, N; Tittonen, I; Grigoras, K; Sainiemi, L; Franssila, S; Peltonen, A

    2010-01-01

    In this paper, we demonstrate silicon microdevice fabrication by a combination of focused ion beam (FIB) and cryogenic deep reactive ion etching (DRIE). Applying FIB treatment only to a thin surface layer enables very high writing speed compared with FIB milling. The use of DRIE then defines the micro- and nanodevices utilizing the FIB-modified silicon as a mask. We demonstrate the ability to create patterns on highly 3D structures, which is extremely challenging by other nanofabrication methods. The alignment of optically made and FIB-defined patterns is also demonstrated. We also show that complete microelectromechanical systems (MEMS) can be fabricated by this method by presenting a double-ended tuning fork resonator as an example. Extremely short process time is achieved as the full fabrication cycle from mask design to electrical measurements can be completed during one working day.

  12. Effects of drying agents on bond strength of etch-and-rinse adhesive systems to enamel immediately after bleaching.

    Science.gov (United States)

    Niat, Alireza Boruzi; Yazdi, Fatmeh Maleknejad; Koohestanian, Niloufar

    2012-12-01

    To determine the effect of drying agents and adhesive solvents on the bond strength of resin composite to enamel immediately after bleaching. Sixty healthy human premolars were bleached using 15% carbamide peroxide gel and randomly divided into three groups according to the immersing solutions applied immediately after bleaching: 70% alcohol, acetone, and distilled water. Each group was randomly divided into two subgroups according to the adhesives that were applied: an alcohol-based adhesive (Single Bond) and an acetone-based adhesive (One Step). By using rubber washers, composite Z100 was placed onto the enamel and shear bond strength was evaluated in a universal testing machine at a crosshead speed of 1 mm/min. The type of failure was also assessed using a stereomicroscope. The data were statistically analyzed by two-way ANOVA and Tukey's post-hoc test (α = 0.05). Fisher's Exact test was used to evaluate differences in the failure modes. Statistical analysis showed that the bond strength of the distilled water groups was significantly lower than that of the other groups, but the bond strengths of the two groups where a drying agent was applied were similar to that of the unbleached group. The acetone-based adhesive (One Step) provided higher bond strength than did the alcohol-based adhesive (Single Bond) (p 0.05). Fisher's Exact test showed there was no significant difference in the failure mode of all the experimental groups (p > 0.05). The application of drying agents improves the bond strength of resin composite to bleached enamel. Furthermore, the acetone-based adhesive used in the study had a higher bond strength to bleached enamel than did the alcohol-based adhesive used.

  13. Bragg grating rogue wave

    Energy Technology Data Exchange (ETDEWEB)

    Degasperis, Antonio [Dipartimento di Fisica, “Sapienza” Università di Roma, P.le A. Moro 2, 00185 Roma (Italy); Wabnitz, Stefan, E-mail: stefan.wabnitz@unibs.it [Dipartimento di Ingegneria dell' Informazione, Università degli Studi di Brescia and INO-CNR, via Branze 38, 25123 Brescia (Italy); Aceves, Alejandro B. [Southern Methodist University, Dallas (United States)

    2015-06-12

    We derive the rogue wave solution of the classical massive Thirring model, that describes nonlinear optical pulse propagation in Bragg gratings. Combining electromagnetically induced transparency with Bragg scattering four-wave mixing may lead to extreme waves at extremely low powers.

  14. Bragg gratings in Topas

    DEFF Research Database (Denmark)

    Zhang, C.; Webb, D.J.; Kalli, K.

    We report for the first time fibre Bragg grating inscription in microstructured optical fibre fabricated from Topas® cyclic olefin copolymer. The temperature sensitivity of the grating was studied revealing a positive Bragg wavelength shift of approximately 0.8 nmK-1,the largest sensitivity yet...

  15. Bragg Curve Spectroscopy

    International Nuclear Information System (INIS)

    Gruhn, C.R.

    1981-05-01

    An alternative utilization is presented for the gaseous ionization chamber in the detection of energetic heavy ions, which is called Bragg Curve Spectroscopy (BCS). Conceptually, BCS involves using the maximum data available from the Bragg curve of the stopping heavy ion (HI) for purposes of identifying the particle and measuring its energy. A detector has been designed that measures the Bragg curve with high precision. From the Bragg curve the range from the length of the track, the total energy from the integral of the specific ionization over the track, the dE/dx from the specific ionization at the beginning of the track, and the Bragg peak from the maximum of the specific ionization of the HI are determined. This last signal measures the atomic number, Z, of the HI unambiguously

  16. Continuous liquid level monitoring sensor system using fiber Bragg grating

    Science.gov (United States)

    Sengupta, Dipankar; Kishore, Putha

    2014-01-01

    The design and packaging of simple, small, and low cost sensor heads, used for continuous liquid level measurement using uniformly thinned (etched) optical fiber Bragg grating (FBG) are proposed. The sensor system consists of only an FBG and a simple detection system. The sensitivity of sensor is found to be 23 pm/cm of water column pressure. A linear optical fiber edge filter is designed and developed for the conversion of Bragg wavelength shift to its equivalent intensity. The result shows that relative power measured by a photo detector is linearly proportional to the liquid level. The obtained sensitivity of the sensor is nearly -15 mV/cm.

  17. Uniformly thinned optical fibers produced via HF etching with spectral and microscopic verification.

    Science.gov (United States)

    Bal, Harpreet K; Brodzeli, Zourab; Dragomir, Nicoleta M; Collins, Stephen F; Sidiroglou, Fotios

    2012-05-01

    A method for producing uniformly thinned (etched) optical fibers is described, which can also be employed to etch optical fibers containing a Bragg grating (FBG) uniformly for evanescent-field-based sensing and other applications. Through a simple modification of this method, the fabrication of phase-shifted FBGs based on uneven etching is also shown. The critical role of how a fiber is secured is shown, and the success of the method is illustrated, by differential interference contrast microscopy images of uniformly etched FBGs. An etched FBG sensor for the monitoring of the refractive index of different glycerin solutions is demonstrated.

  18. Preparation and analysis of amorphous carbon films deposited from (C{sub 6}H{sub 12})/Ar/He chemistry for application as the dry etch hard mask in the semiconductor manufacturing process

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Seungmoo [Department of Materials Science and Engineering, Korea University, Seoul, 136-701 (Korea, Republic of); TC Technology Team, Samsung Electronics Co. Ltd., Gyeounggi-Do, 446-711 (Korea, Republic of); Won, Jaihyung; Choi, Jongsik [TC Technology Team, Samsung Electronics Co. Ltd., Gyeounggi-Do, 446-711 (Korea, Republic of); Jang, Samseok [Department of Materials Science and Engineering, Korea University, Seoul, 136-701 (Korea, Republic of); Jee, Yeonhong; Lee, Hyeondeok [TC Technology Team, Samsung Electronics Co. Ltd., Gyeounggi-Do, 446-711 (Korea, Republic of); Byun, Dongjin, E-mail: dbyun@korea.ac.kr [Department of Materials Science and Engineering, Korea University, Seoul, 136-701 (Korea, Republic of)

    2011-08-01

    Amorphous carbon layers (ACL) were deposited on Si (100) wafers by plasma enhanced chemical vapor deposition (PECVD) by using 1-hexene (C{sub 6}H{sub 12}) as a carbon source for dry etch hard mask of semiconductor devices manufacturing process. The deposition characteristics and film properties were investigated by means of ellipsometry, Raman spectroscopy, X-ray photo electron spectroscopy (XPS) and stress analysis. Hardness, Young's modulus, and surface roughness of ACL deposited at 550 deg. C were investigated by using nano-indentation and AFM. The deposition rate was decreased from 5050 A/min to 2160 A/min, and dry etch rate was decreased from 2090 A/min to 1770 A/min, and extinction coefficient was increased from 0.1 to 0.5. Raman analysis revealed a higher shift of the G-peak and a lower shift of the D-peak and the increase of I(D)/I(G) ratio as the deposition temperature was increased from 350 deg. C to 550 deg. C. XPS results of ACL deposited at 550 deg. C revealed a carbon 1s binding energy of 284.4 eV. The compressive film stress was decreased from 2.95 GPa to 1.28 GPa with increasing deposition temperature. The hardness and Young's modulus of ACL deposited at 550 deg. C were 5.8 GPa and 48.7 GPa respectively. The surface roughness RMS of ACL deposited at 550 deg. C was 2.24 A, and that after cleaning in diluted HF solution (H{sub 2}O:HF = 200:1), SC1 (NH{sub 4}OH:H{sub 2}O{sub 2}:H{sub 2}O = 1:4:20) solution, and sulfuric acid solution (H{sub 2}SO{sub 4}:H{sub 2}O{sub 2} = 6:1) was 2.28 A, 2.30 A and 7.34 A, respectively. The removal amount of ACL deposited at 550 deg. C in diluted HF solution, SC1 solution and sulfuric acid solution was 6 A, 36 A and 110 A, respectively. These results demonstrated the viability of ACL deposited by PECVD from C{sub 6}H{sub 12} at 550 deg. C for application as the dry etch hard mask in fabrication of semiconductor devices.

  19. Switchable Bragg gratings

    DEFF Research Database (Denmark)

    Marckmann, Carl Johan

    2003-01-01

    Research Center (MIC) at the Technical University of Denmark. The Bragg gratings were fabricated at COM using UV irradiation of the planar waveguides using the phase mask method. The induction of a frozen-in DC electric field into the samples was performed by thermal poling of the Bragg gratings...... layers, it becam possible to investigate the symmetry properties of the third-order nonlinearities. Contrary to the expectations for an amorphous material, the measurements indicated an almost polarization independent third-order nonlinearity - the most probable explanation being electrostriction......The subject of this ph.d. thesis was the development of an electrically switchable Bragg grating made in an optical waveguide using thermal poling to be applied within optical telecommunication systems. The planar waveguides used in this thesis were fabricated at the Micro- and Nanotechnology...

  20. Study on ECR dry etching and selective MBE growth of AlGaN/GaN for fabrication of quantum nanostructures on GaN (0001) substrates

    International Nuclear Information System (INIS)

    Oikawa, Takeshi; Ishikawa, Fumitaro; Sato, Taketomo; Hashizume, Tamotsu; Hasegawa, Hideki

    2005-01-01

    This paper attempts to form AlGaN/GaN quantum wire (QWR) network structures on patterned GaN (0001) substrates by selective molecular beam epitaxy (MBE) growth. Substrate patterns were prepared along - and -directions by electron cyclotron resonance assisted reactive-ion beam etching (ECR-RIBE) process. Selective growth was possible for both directions in the case of GaN growth, but only in the -direction in the case of AlGaN growth. A hexagonal QWR network was successfully grown on a hexagonal mesa pattern by combining the -direction and two other equivalent directions. AFM observation confirmed excellent surface morphology of the grown network. A clear cathodoluminescence (CL) peak coming from the embedded AlGaN/GaN QWR structure was clearly identified

  1. Evolution of etched nuclear track profiles of alpha particles in CR-39 by atomic force microscopy

    International Nuclear Information System (INIS)

    Félix-Bautista, R.; Hernández-Hernández, C.; Zendejas-Leal, B.E.; Fragoso, R.; Golzarri, J.I.; Vázquez-López, C.; Espinosa, G.

    2013-01-01

    A series of atomic force microscopy (AFM) images of etched nuclear tracks has been obtained and used to calculate the nuclear track registration sensitivity parameter V(x) = Vt(x)/Vb. Due to the AFM limitations the samples were irradiated normally to the surface, and with energies attenuated in order to include the Bragg peak region in the AFM piezo-scanner z movement range. The simulation of the track profile evolution was then obtained. The different stages of etched nuclear track profiles were rendered. - Highlights: ► Using AFM we reach that Bragg peak region of etched tracks in CR-39. ► The etched track sensitivity V was calculated by data obtained by AFM. ► The evolucion of etched nuclear tracks was simulated by data achieved by AFM

  2. Silicon graphene Bragg gratings.

    Science.gov (United States)

    Capmany, José; Domenech, David; Muñoz, Pascual

    2014-03-10

    We propose the use of interleaved graphene sections on top of a silicon waveguide to implement tunable Bragg gratings. The filter central wavelength and bandwidth can be controlled changing the chemical potential of the graphene sections. Apodization techniques are also presented.

  3. Bragg reflection program

    International Nuclear Information System (INIS)

    Lynn, J.W.

    This user's guide to the Bragg Reflection Program (BRP) is in the nature of an informal report. The general purpose of BRP is to scan a series of Bragg reflections automatically in order to obtain profiles and integrated intensities. The program is used in conjunction with the SUPERVISOR and READ packages, and the procedures for using it are similar to those for the Triple-Axis Control program. All the general features of the system, SUPERVISOR and READ packages as described in the Spectrometer Control Systems User's Guide are preserved. The presentation assumes that the reader is familiar with these. Sections are given on the READ package, execution and use, error messages, and output. A few sample problems are shown. (1 figure) (U.S.)

  4. Thermal and chemical treatment of polymer optical fiber Bragg grating sensors for enhanced mechanical sensitivity

    DEFF Research Database (Denmark)

    Pospori, Andreas; Marques, C. A. F.; Saez-Rodriguez, D.

    2017-01-01

    An investigation of the thermal annealing effects on the strain, stress, and force sensitivities of polymer optical fiber Bragg grating sensors is performed. We demonstrate for the first time that the fiber annealing can enhance both stress and force sensitivities of Bragg grating sensors......, with the possible cause being the molecular relaxation of the polymer when fiber is raised above the β-transition temperature. A simple, cost-effective, but well controlled method for fiber annealing is also presented in this work. In addition, the effects of chemical etching on the strain, stress, and force...... sensitivities have been investigated. Results show that fiber etching too can increase the force sensitivity, and it can also affect the strain and stress sensitivities of the Bragg grating sensors....

  5. Thermal and chemical treatment of polymer optical fiber Bragg grating sensors for enhanced mechanical sensitivity

    Science.gov (United States)

    Pospori, A.; Marques, C. A. F.; Sáez-Rodríguez, D.; Nielsen, K.; Bang, O.; Webb, D. J.

    2017-07-01

    An investigation of the thermal annealing effects on the strain, stress, and force sensitivities of polymer optical fiber Bragg grating sensors is performed. We demonstrate for the first time that the fiber annealing can enhance both stress and force sensitivities of Bragg grating sensors, with the possible cause being the molecular relaxation of the polymer when fiber is raised above the β -transition temperature. A simple, cost-effective, but well controlled method for fiber annealing is also presented in this work. In addition, the effects of chemical etching on the strain, stress, and force sensitivities have been investigated. Results show that fiber etching too can increase the force sensitivity, and it can also affect the strain and stress sensitivities of the Bragg grating sensors.

  6. Plasma Etching of Tapered Features in Silicon for MEMS and Wafer Level Packaging Applications

    International Nuclear Information System (INIS)

    Ngo, H-D; Hiess, Andre; Seidemann, Volker; Studzinski, Daniel; Lange, Martin; Leib, Juergen; Shariff, Dzafir; Ashraf, Huma; Steel, Mike; Atabo, Lilian; Reast, Jon

    2006-01-01

    This paper is a brief report of plasma etching as applied to pattern transfer in silicon. It will focus more on concept overview and strategies for etching of tapered features of interest for MEMS and Wafer Level Packaging (WLP). The basis of plasma etching, the dry etching technique, is explained and plasma configurations are described elsewhere. An important feature of plasma etching is the possibility to achieve etch anisotropy. The plasma etch process is extremely sensitive to many variables such as mask material, mask openings and more important the plasma parameters

  7. Inductively coupled plasma etching of III-V antimonides in BCl3/SiCl4 etch chemistry

    International Nuclear Information System (INIS)

    Swaminathan, K.; Janardhanan, P.E.; Sulima, O.V.

    2008-01-01

    Inductively coupled plasma etching of GaSb using BCl 3 /SiCl 4 etch chemistry has been investigated. The etch rates were studied as a function of bias power, inductively coupled plasma source power, plasma chemistry and chamber pressure. The etched surfaces remain smooth and stoichiometric over the entire range of plasma conditions investigated. The knowledge gained in etching GaSb was applied to etching AlGaAsSb and InGaAsSb in order to fabricate heterojunction phototransistors. As expected, InGaAsSb etch rate was much lower compared to the corresponding value for GaSb, mainly due to the relatively low volatility of indium chlorides. For a wide range of plasma conditions, the selectivity between GaSb and AlGaAsSb was close to unity, which is desirable for fabricating etched mirrors and gratings for Sb-based mid-infrared laser diodes. The surface roughness and the etch profile were examined for the etched GaSb, AlGaAsSb and InGaAsSb samples using scanning electron microscope. The high etch rates achieved (∼ 4 μm/min) facilitated deep etching of GaSb. A single layer, soft mask (AZ-4903 photoresist) was used to etch GaSb, with etch depth ∼ 90 μm. The deep dry etching of GaSb has many important applications including etching substrate windows for backside-illuminated photodetectors for the mid-infrared wavelength range

  8. Improvement of soybean variety 'Bragg' through mutagenesis

    International Nuclear Information System (INIS)

    Bhatnagar, P.S.; Prabhakar; Tiwari, S.P.; Sandhu, J.S.

    1989-01-01

    Full text: Variety 'Bragg' (Jackson x D49-2491) of soybean (Glycine max. (L.) Merrill) was found to be high yielding and widely adaptable throughout India. Its yield stability, however, is unsatisfactory, probably due to low germinability necessitating use of higher seed rate. With the main objective to rectify this defect, mutagenesis involving chemical as well as physical mutagens was used. Dry seeds were treated with EMS or MMS (0.2, 0.4 and 0.6%), or gamma rays (15, 20 and 25 kR) with and without additional exposure to UV (2 hrs at 260 nm) in 1982. In M 2 , a mutation frequency ranging from 2.24 to 22.85% was observed. Screening of M 2 and of subsequent generations yielded a broad spectrum of mutations. Some of the mutants are agronomically useful. Among them, mutant 'T 2 14' resulting from 25 kR gamma rays + UV, was found to possess better germinability (+15%), earliness (5 days) and high yield during both rainy and post-rainy seasons in 1986 and 1987, when compared with the parent variety 'Bragg'. The mutant has smaller seed-size (TGW 125 g) than the parent (145 g). In soybean, large-seeded varieties were reported to have poorer seed germinability. Thus, the better germinability of the mutant might be related to its reduced seed size. Seeds of the mutant show a light brown colour of the hilum in contrast to the black hilum of 'Bragg'. In other characters the mutant is similar to 'Bragg'. The mutant should have potential for commercial cultivation in India. For confirmation of its agronomically superior performance, it is undergoing national evaluation in multilocational trials under 'All India Co-ordinated Research Project on Soybean (ICAR)'. The strain has been named 'NRC-2'. (author)

  9. Improvement of soybean variety 'Bragg' through mutagenesis

    Energy Technology Data Exchange (ETDEWEB)

    Bhatnagar, P S; Prabhakar,; Tiwari, S P; Sandhu, J S [National Research Centre for Soybean, Indore (India)

    1989-01-01

    Full text: Variety 'Bragg' (Jackson x D49-2491) of soybean (Glycine max. (L.) Merrill) was found to be high yielding and widely adaptable throughout India. Its yield stability, however, is unsatisfactory, probably due to low germinability necessitating use of higher seed rate. With the main objective to rectify this defect, mutagenesis involving chemical as well as physical mutagens was used. Dry seeds were treated with EMS or MMS (0.2, 0.4 and 0.6%), or gamma rays (15, 20 and 25 kR) with and without additional exposure to UV (2 hrs at 260 nm) in 1982. In M{sub 2}, a mutation frequency ranging from 2.24 to 22.85% was observed. Screening of M{sub 2} and of subsequent generations yielded a broad spectrum of mutations. Some of the mutants are agronomically useful. Among them, mutant 'T{sub 2}14' resulting from 25 kR gamma rays + UV, was found to possess better germinability (+15%), earliness (5 days) and high yield during both rainy and post-rainy seasons in 1986 and 1987, when compared with the parent variety 'Bragg'. The mutant has smaller seed-size (TGW 125 g) than the parent (145 g). In soybean, large-seeded varieties were reported to have poorer seed germinability. Thus, the better germinability of the mutant might be related to its reduced seed size. Seeds of the mutant show a light brown colour of the hilum in contrast to the black hilum of 'Bragg'. In other characters the mutant is similar to 'Bragg'. The mutant should have potential for commercial cultivation in India. For confirmation of its agronomically superior performance, it is undergoing national evaluation in multilocational trials under 'All India Co-ordinated Research Project on Soybean (ICAR)'. The strain has been named 'NRC-2'. (author)

  10. Silicon etch process

    International Nuclear Information System (INIS)

    Day, D.J.; White, J.C.

    1984-01-01

    A silicon etch process wherein an area of silicon crystal surface is passivated by radiation damage and non-planar structure produced by subsequent anisotropic etching. The surface may be passivated by exposure to an energetic particle flux - for example an ion beam from an arsenic, boron, phosphorus, silicon or hydrogen source, or an electron beam. Radiation damage may be used for pattern definition and/or as an etch stop. Ethylenediamine pyrocatechol or aqueous potassium hydroxide anisotropic etchants may be used. The radiation damage may be removed after etching by thermal annealing. (author)

  11. Deeply-etched DBR mirrors for photonic integrated circuits and tunable lasers

    NARCIS (Netherlands)

    Docter, B.

    2009-01-01

    Deeply-etched Distributed Bragg Reflector (DBR) mirrors are a new versatile building block for Photonic Integrated Circuits that allows us to create more complex circuits for optical telecommunication applications. The DBR mirrors increase the device design flexibility because the mirrors can be

  12. Bragg gratings: Optical microchip sensors

    Science.gov (United States)

    Watts, Sam

    2010-07-01

    A direct UV writing technique that can create multiple Bragg gratings and waveguides in a planar silica-on-silicon chip is enabling sensing applications ranging from individual disposable sensors for biotechnology through to multiplexed sensor networks in pharmaceutical manufacturing.

  13. MEMS Bragg grating force sensor

    DEFF Research Database (Denmark)

    Reck, Kasper; Thomsen, Erik Vilain; Hansen, Ole

    2011-01-01

    We present modeling, design, fabrication and characterization of a new type of all-optical frequency modulated MEMS force sensor based on a mechanically amplified double clamped waveguide beam structure with integrated Bragg grating. The sensor is ideally suited for force measurements in harsh...... environments and for remote and distributed sensing and has a measured sensitivity of -14 nm/N, which is several times higher than what is obtained in conventional fiber Bragg grating force sensors. © 2011 Optical Society of America....

  14. Controlled ion track etching

    Science.gov (United States)

    George, J.; Irkens, M.; Neumann, S.; Scherer, U. W.; Srivastava, A.; Sinha, D.; Fink, D.

    2006-03-01

    It is a common practice since long to follow the ion track-etching process in thin foils via conductometry, i.e . by measurement of the electrical current which passes through the etched track, once the track breakthrough condition has been achieved. The major disadvantage of this approach, namely the absence of any major detectable signal before breakthrough, can be avoided by examining the track-etching process capacitively. This method allows one to define precisely not only the breakthrough point before it is reached, but also the length of any non-transient track. Combining both capacitive and conductive etching allows one to control the etching process perfectly. Examples and possible applications are given.

  15. Plasma etching of patterned tungsten

    International Nuclear Information System (INIS)

    Franssila, S.

    1993-01-01

    Plasma etching of tungsten is discussed from the viewpoint of thin film structure and integrated circuit process engineering. The emphasis is on patterned tungsten etching for silicon device and X-ray mask fabrication. After introducing tungsten etch chemistries and mechanisms, microstructural aspects of tungsten films (crystal structure, grain size, film density, defects, impurities) in relation to etching are discussed. Approaches to etch process optimization are presented, and the current state-of-the-art of patterned tungsten etching is reviewed. (orig.)

  16. Etching in microsystem technology

    CERN Document Server

    Kohler, Michael

    2008-01-01

    Microcomponents and microdevices are increasingly finding application in everyday life. The specific functions of all modern microdevices depend strongly on the selection and combination of the materials used in their construction, i.e., the chemical and physical solid-state properties of these materials, and their treatment. The precise patterning of various materials, which is normally performed by lithographic etching processes, is a prerequisite for the fabrication of microdevices.The microtechnical etching of functional patterns is a multidisciplinary area, the basis for the etching p

  17. Fiber Bragg Grating Sensor for Detection of Nitrate Concentration in Water

    Directory of Open Access Journals (Sweden)

    A. S. LALASANGI

    2011-02-01

    Full Text Available The concentrations of chemical species in drinking water are of great interest. We demonstrated etched fiber Bragg grating (FBG as a concentration sensor for nitrate by analyzing the Bragg wavelength shift with concentration of chemical solution. The FBG is fabricated by phase mask technique on single mode Ge-B co-doped photosensitive fiber. Sensitivity of FBGs to the surrounding solution concentration can be enhanced by reducing diameter of the cladding with 40 % HF solution. The maximum sensitivity achieved is 1.322 ´ 10-3 nm/ppm. The overall shift of Bragg wavelength is of the order of 6.611 ´ 10-2 nm for 10 to 50 ppm concentration.

  18. Photonic Hilbert transformers based on laterally apodized integrated waveguide Bragg gratings on a SOI wafer.

    Science.gov (United States)

    Bazargani, Hamed Pishvai; Burla, Maurizio; Chrostowski, Lukas; Azaña, José

    2016-11-01

    We experimentally demonstrate high-performance integer and fractional-order photonic Hilbert transformers based on laterally apodized Bragg gratings in a silicon-on-insulator technology platform. The sub-millimeter-long gratings have been fabricated using single-etch electron beam lithography, and the resulting HT devices offer operation bandwidths approaching the THz range, with time-bandwidth products between 10 and 20.

  19. Etching method employing radiation

    International Nuclear Information System (INIS)

    Chapman, B.N.; Winters, H.F.

    1982-01-01

    This invention provides a method for etching a silicon oxide, carbide, nitride, or oxynitride surface using an electron or ion beam in the presence of a xenon or krypton fluoride. No additional steps are required after exposure to radiation

  20. Polymer optical fiber bragg grating sensors

    DEFF Research Database (Denmark)

    Stefani, Alessio; Yuan, Scott Wu; Andresen, Søren

    2010-01-01

    Fiber-optical accelerometers based on polymer optical fiber Bragg gratings are reported. We have written fiber Bragg gratings for 1550 nm and 850 nm operations, characterized their temperature and strain response, and tested their performance in a prototype accelerometer....

  1. Device fabrication by plasma etching

    International Nuclear Information System (INIS)

    Mogab, C.J.

    1980-01-01

    Plasma etching as applied to many of the materials encountered in the fabrication of LSI's is complicated by loading effect-the dependence of etch rate on the integrated surface area to be etched. This problem is alleviated by appropriate choice of etchant and etching conditions. Appropriate choice of system parameters, generally most concerned with the inherent lifetime of etchant species, may also result in improvement of etch rate uniformity on a wafer-by-wafer basis

  2. Colagem ortodôntica em esmalte com presença ou ausência de contaminação salivar: é necessário o uso de adesivo auto-condicionante ou de adesivo hidrofílico? Orthodontic bonding in dry and saliva contaminated enamel: is a self-etching primer or a moisture-insensitive primer necessary?

    Directory of Open Access Journals (Sweden)

    Cristiane Becher Rosa

    2008-06-01

    Full Text Available OBJETIVO: o objetivo deste trabalho foi avaliar a resistência ao cisalhamento da colagem ortodôntica de um adesivo hidrofílico (Transbond Moisture-Insensitive Primer, 3M Unitek, Monrovia, Califórnia, de um adesivo auto-condicionante (Transbond Self-Etching Primer, 3M Unitek, Monrovia, Califórnia, e sem uso de adesivo, em superfícies de esmalte secas ou contaminadas por saliva. METODOLOGIA: incisivos bovinos (60 foram divididos em 6 grupos: (1 controle sem contaminação salivar (sem adesivo, (2 controle com contaminação salivar (sem adesivo, (3 adesivo auto-condicionante sem contaminação salivar, (4 adesivo auto-condicionante com contaminação salivar antes do adesivo, (5 adesivo hidrofílico sem contaminação salivar e (6 adesivo hidrofílico com contaminação salivar antes do adesivo. Braquetes metálicos foram colados com compósito (Transbond XT, 3M Unitek, Monrovia, Califórnia. Após a colagem, os corpos-de prova foram armazenados a 37±1ºC em ambiente úmido até a realização do teste de cisalhamento. Diferença estatística foi determinada com valor de probabilidade de 0,05 ou menos (p AIM: The purpose of this study was to evaluate the shear bond strength of orthodontic bonding with the use of a hydrophilic primer (Transbond Moisture-Insensitive Primer, 3M Unitek, Monrovia, Calif., a self-etching primer (Transbond Plus Self-etching Primer, 3M Unitek, Monrovia, Calif. and without primer application, in dry and saliva contaminated enamel surfaces. METHODS: Bovine incisors (60 were divided into 6 groups: (1 uncontaminated control (no primer, (2 control with saliva contamination (no primer, (3 uncontaminated self-etching primer, (4 saliva contamination before self-etching primer, (5 uncontaminated hydrophilic primer and (6 saliva contamination before hydrophilic primer. Stainless steel brackets were bonded with composite resin (Transbond XT, 3M Unitek, Monrovia, Calif.. After bonding, all samples were stored at 37±1°C in a

  3. Inductively coupled plasma etching of III-V antimonides in BCl{sub 3}/SiCl{sub 4} etch chemistry

    Energy Technology Data Exchange (ETDEWEB)

    Swaminathan, K. [Department of Electrical and Computer Engineering, University of Delaware, Newark, Delaware 19716 (United States)], E-mail: swaminak@ece.osu.edu; Janardhanan, P.E.; Sulima, O.V. [Department of Electrical and Computer Engineering, University of Delaware, Newark, Delaware 19716 (United States)

    2008-10-01

    Inductively coupled plasma etching of GaSb using BCl{sub 3}/SiCl{sub 4} etch chemistry has been investigated. The etch rates were studied as a function of bias power, inductively coupled plasma source power, plasma chemistry and chamber pressure. The etched surfaces remain smooth and stoichiometric over the entire range of plasma conditions investigated. The knowledge gained in etching GaSb was applied to etching AlGaAsSb and InGaAsSb in order to fabricate heterojunction phototransistors. As expected, InGaAsSb etch rate was much lower compared to the corresponding value for GaSb, mainly due to the relatively low volatility of indium chlorides. For a wide range of plasma conditions, the selectivity between GaSb and AlGaAsSb was close to unity, which is desirable for fabricating etched mirrors and gratings for Sb-based mid-infrared laser diodes. The surface roughness and the etch profile were examined for the etched GaSb, AlGaAsSb and InGaAsSb samples using scanning electron microscope. The high etch rates achieved ({approx} 4 {mu}m/min) facilitated deep etching of GaSb. A single layer, soft mask (AZ-4903 photoresist) was used to etch GaSb, with etch depth {approx} 90 {mu}m. The deep dry etching of GaSb has many important applications including etching substrate windows for backside-illuminated photodetectors for the mid-infrared wavelength range.

  4. Fibre Bragg grating for flood embankment monitoring

    Science.gov (United States)

    Markowski, Konrad; Nevar, Stanislau; Dworzanski, Adam; Hackiewicz, Krzysztof; Jedrzejewski, Kazimierz

    2014-11-01

    In this article we present the preliminary studies for the flood embankment monitoring system based on the fibre Bragg gratings. The idea of the system is presented. The Bragg resonance shift is transformed to the change of the power detected by the standard InGaAs photodiode. The discrimination of the received power was executed by another fibre Bragg grating with different parameters. The project of the fully functional system is presented as well.

  5. Single-crystal silicon trench etching for fabrication of highly integrated circuits

    Science.gov (United States)

    Engelhardt, Manfred

    1991-03-01

    The development of single crystal silicon trench etching for fabrication of memory cells in 4 16 and 64Mbit DRAMs is reviewed in this paper. A variety of both etch tools and process gases used for the process development is discussed since both equipment and etch chemistry had to be improved and changed respectively to meet the increasing requirements for high fidelity pattern transfer with increasing degree of integration. In additon to DRAM cell structures etch results for deep trench isolation in advanced bipolar ICs and ASICs are presented for these applications grooves were etched into silicon through a highly doped buried layer and at the borderline of adjacent p- and n-well areas respectively. Shallow trench etching of large and small exposed areas with identical etch rates is presented as an approach to replace standard LOCOS isolation by an advanced isolation technique. The etch profiles were investigated with SEM TEM and AES to get information on contathination and damage levels and on the mechanism leading to anisotropy in the dry etch process. Thermal wave measurements were performed on processed single crystal silicon substrates for a fast evaluation of the process with respect to plasma-induced substrate degradation. This useful technique allows an optimization ofthe etch process regarding high electrical performance of the fully processed memory chip. The benefits of the use of magnetic fields for the development of innovative single crystal silicon dry

  6. Ultrafast Optical Signal Processing with Bragg Structures

    Directory of Open Access Journals (Sweden)

    Yikun Liu

    2017-05-01

    Full Text Available The phase, amplitude, speed, and polarization, in addition to many other properties of light, can be modulated by photonic Bragg structures. In conjunction with nonlinearity and quantum effects, a variety of ensuing micro- or nano-photonic applications can be realized. This paper reviews various optical phenomena in several exemplary 1D Bragg gratings. Important examples are resonantly absorbing photonic structures, chirped Bragg grating, and cholesteric liquid crystals; their unique operation capabilities and key issues are considered in detail. These Bragg structures are expected to be used in wide-spread applications involving light field modulations, especially in the rapidly advancing field of ultrafast optical signal processing.

  7. Metal-assisted etch combined with regularizing etch

    Energy Technology Data Exchange (ETDEWEB)

    Yim, Joanne; Miller, Jeff; Jura, Michael; Black, Marcie R.; Forziati, Joanne; Murphy, Brian; Magliozzi, Lauren

    2018-03-06

    In an aspect of the disclosure, a process for forming nanostructuring on a silicon-containing substrate is provided. The process comprises (a) performing metal-assisted chemical etching on the substrate, (b) performing a clean, including partial or total removal of the metal used to assist the chemical etch, and (c) performing an isotropic or substantially isotropic chemical etch subsequently to the metal-assisted chemical etch of step (a). In an alternative aspect of the disclosure, the process comprises (a) performing metal-assisted chemical etching on the substrate, (b) cleaning the substrate, including removal of some or all of the assisting metal, and (c) performing a chemical etch which results in regularized openings in the silicon substrate.

  8. Analysis of InP-based single photon avalanche diodes based on a single recess-etching process

    Science.gov (United States)

    Lee, Kiwon

    2018-04-01

    Effects of the different etching techniques have been investigated by analyzing electrical and optical characteristics of two-types of single-diffused single photon avalanche diodes (SPADs). The fabricated two-types of SPADs have no diffusion depth variation by using a single diffusion process at the same time. The dry-etched SPADs show higher temperature dependence of a breakdown voltage, larger dark-count-rate (DCR), and lower photon-detection-efficiency (PDE) than those of the wet-etched SPADs due to plasma-induced damage of dry-etching process. The results show that the dry etching damages can more significantly affect the performance of the SPADs based on a single recess-etching process.

  9. Atomic Layer Etching : What can we learn from Atomic Layer Deposition?

    NARCIS (Netherlands)

    Faraz, T.; Roozeboom, F.; Knoops, H.C.M.; Kessels, W.M.M.

    2015-01-01

    Current trends in semiconductor device manufacturing impose extremely stringent requirements on nanoscale processing techniques, both in terms of accurately controlling material properties and in terms of precisely controlling nanometer dimensions. To take nanostructuring by dry etching to the next

  10. Atomic layer etching : what can we learn from atomic layer deposition?

    NARCIS (Netherlands)

    Faraz, T.; Roozeboom, F.; Knoops, H.C.M.; Kessels, W.M.M.

    2015-01-01

    Current trends in semiconductor device manufacturing impose extremely stringent requirements on nanoscale processing techniques, both in terms of accurately controlling material properties and in terms of precisely controlling nanometer dimensions. To take nanostructuring by dry etching to the next

  11. Cascaded Bragg scattering in fiber optics.

    Science.gov (United States)

    Xu, Y Q; Erkintalo, M; Genty, G; Murdoch, S G

    2013-01-15

    We report on a theoretical and experimental study of cascaded Bragg scattering in fiber optics. We show that the usual energy-momentum conservation of Bragg scattering can be considerably relaxed via cascade-induced phase-matching. Experimentally we demonstrate frequency translation over six- and 11-fold cascades, in excellent agreement with derived phase-matching conditions.

  12. Fundamental losses in planar Bragg waveguides

    NARCIS (Netherlands)

    Vinogradov, A. V.; Mitrofanov, A. N.; Popov, A. V.; Fedin, M. A.

    2007-01-01

    This paper considers a planar Bragg waveguide. The guided modes and their dissipation due to the fundamental absorption are described. In the interacting-wave approximation, an analytical relation between the characteristics of the modes and parameters of the Bragg-waveguide geometry was

  13. Development of etched nuclear tracks

    International Nuclear Information System (INIS)

    Somogyi, G.

    1980-01-01

    The theoretical description of the evolution of etched tracks in solid state nuclear track detectors is considered for different initial conditions, for the cases of constant and varying track etch rates, isotropic and anisotropic bulk etching as well as for thick and thin detectors. It is summarized how one can calculate the main parameters of etch-pit geometry, the track length, the axes of a surface track opening, track profile and track contour. The application of the theory of etch-track evolution is demonstrated with selected practical problems. Attention is paid to certain questions related to the determination of unknown track parameters and calculation of surface track sizes. Finally, the theory is extended to the description of the perforation and etch-hole evolution process in thin detectors, which is of particular interest for track radiography and nuclear filter production. (orig.)

  14. Development of etched nuclear tracks

    International Nuclear Information System (INIS)

    Somogyi, G.

    1979-01-01

    The theoretical description of the evolution of etched tracks in solid state nuclear track detectors is considered for different initial conditions, for the cases of constant and varying track etch rates, isotopic and unisotropic bulk etching as well as for thick and thin detectors. It is summarized how the main parameters of etch-pit geometry, the track length, the axes of a surface track opening, the track profile and the track contour can be calculated. The application of the theory of etch-track evolution is demonstrated with selected practical problems. Attention is paid to certain questions related to the determination of unknown track parameters and calculation of surface track sizes. Finally, the theory is extended to the description of the perforation and etch-hole evolution process in thin detectors, which is of particular interest for track radiography and nuclear filter production. (author)

  15. Bragg scattering of electromagnetic waves by microwave-produced plasma layers

    Science.gov (United States)

    Kuo, S. P.; Zhang, Y. S.

    1990-01-01

    A set of parallel plasma layers is generated by two intersecting microwave pulses in a chamber containing dry air at a pressure comparable to the upper atmosphere. The dependencies of breakdown conditions on the pressure and pulse length are examined. The results are shown to be consistent with the appearance of tail erosion of the microwave pulse caused by air breakdown. A Bragg scattering experiment, using the plasma layers as a Bragg reflector, is then performed. Both time domain and frequency domain measurements of wave scattering are conducted. The experimental results are found to agree very well with the theory.

  16. Plasma etching of polymers like SU8 and BCB

    Science.gov (United States)

    Mischke, Helge; Gruetzner, Gabi; Shaw, Mark

    2003-01-01

    Polymers with high viscosity, like SU8 and BCB, play a dominant role in MEMS application. Their behavior in a well defined etching plasma environment in a RIE mode was investigated. The 40.68 MHz driven bottom electrode generates higher etch rates combined with much lower bias voltages by a factor of ten or a higher efficiency of the plasma with lower damaging of the probe material. The goal was to obtain a well-defined process for the removal and structuring of SU8 and BCB using fluorine/oxygen chemistry, defined using variables like electron density and collision rate. The plasma parameters are measured and varied using a production proven technology called SEERS (Self Excited Electron Resonance Spectroscopy). Depending on application and on Polymer several metals are possible (e.g., gold, aluminum). The characteristic of SU8 and BCB was examined in the case of patterning by dry etching in a CF4/O2 chemistry. Etch profile and etch rate correlate surprisingly well with plasma parameters like electron density and electron collision rate, thus allowing to define to adjust etch structure in situ with the help of plasma parameters.

  17. Refractive index and temperature sensitivity characteristics of a micro-slot fiber Bragg grating.

    Science.gov (United States)

    Saffari, Pouneh; Yan, Zhijun; Zhou, Kaiming; Zhang, Lin

    2012-07-10

    Fabrication and characterization of a UV inscribed fiber Bragg grating (FBG) with a micro-slot liquid core is presented. Femtosecond (fs) laser patterning/chemical etching technique was employed to engrave a micro-slot with dimensions of 5.74 μm(h)×125 μm(w)×1388.72 μm(l) across the whole grating. The device has been evaluated for refractive index (RI) and temperature sensitivities and exhibited distinctive thermal response and RI sensitivity beyond the detection limit of reported fiber gratings. This structure has not just been RI sensitive, but also maintained the robustness comparing with the bare core FBGs and long-period gratings with the partial cladding etched off.

  18. Optical diagnostics for plasma etching

    NARCIS (Netherlands)

    Bisschops, T.H.J.; Kroesen, G.M.W.; Veldhuizen, van E.M.; de Zeeuw, C.J.H.; Timmermans, C.J.

    1985-01-01

    Several optical diagnostics were used to det. plasma properties and etch rates in an single wafer etch reactor. Results of UV-visible spectroscopy and IR absorption spectroscopy, indicating different mol. species and their densities are presented. The construction of an interferometer to det. the

  19. Etching Effect of an Atmospheric DC Arc Plasmatron

    International Nuclear Information System (INIS)

    Chun, Se Min; Kim, Ji Hun; Kang, In Je; Lee, Heon Ju

    2010-01-01

    Thermal plasmas (especially arc plasma) were extensively industrialized, principally by aeronautic sector. Cold plasma technologies have been developed in the microelectronics but their vacuum equipment limits their implantation. Plasmas used in dry etching, thin film deposition and surface treatment for display or semiconductor industries are operating at low pressures in very costly due to the use of vacuum equipment and vacuum components. Use of DC arc plasmatrons in welding, soldering, and cutting of metals is well known. A DC-arc plasmatron with high durability was reported to be a suitable device for etching silicon and photo-resist surfaces

  20. Anisotropic etching of silicon for application in micro machine using plasma of SF6/CH4/O2/Ar and SF6/CF4/O2/Ar

    International Nuclear Information System (INIS)

    Reyes B, C.; Moshkalyov, S.A.; Swart, J.W.

    2004-01-01

    We investigated the reactive ion etching of silicon using SF 6 /CH 4 (CF 4 )/O 2 /Ar gas mixtures containing fluorine for MEMS applications. Etch rates and anisotropy of etch profiles were examined as a function of gas composition, material of electrode, and RF power. Etch depths were measured using a profilometers, and etch profiles were analyzed by scanning electron microscope. As a mask material, an aluminium film deposited by evaporation, was used. High anisotropy of etching of 0.95 was achieved at etch depths up to 20-30 micrometers and etch rates of approximately 0.3-0.6 μm/min. Highly anisotropic etching is based on a mechanism that enhance the ion bombarding and protects the sidewalls due to polymerization and/or oxidation mechanisms in order to avoid the lateral etch. However, under the anisotropic etching conditions, considerable damages of the etched surfaces (roughness formation), were observed. After etching experiments, wet / dry cleaning procedures were applied to remove surface residues resulting from the reactive ion etching and to improve the etched surface morphology. (Author)

  1. Etch bias inversion during EUV mask ARC etch

    Science.gov (United States)

    Lajn, Alexander; Rolff, Haiko; Wistrom, Richard

    2017-07-01

    The introduction of EUV lithography to high volume manufacturing is now within reach for 7nm technology node and beyond (1), at least for some steps. The scheduling is in transition from long to mid-term. Thus, all contributors need to focus their efforts on the production requirements. For the photo mask industry, these requirements include the control of defectivity, CD performance and lifetime of their masks. The mask CD performance including CD uniformity, CD targeting, and CD linearity/ resolution, is predominantly determined by the photo resist performance and by the litho and etch processes. State-of-the-art chemically amplified resists exhibit an asymmetric resolution for directly and indirectly written features, which usually results in a similarly asymmetric resolution performance on the mask. This resolution gap may reach as high as multiple tens of nanometers on the mask level in dependence of the chosen processes. Depending on the printing requirements of the wafer process, a reduction or even an increase of this gap may be required. A potential way of tuning via the etch process, is to control the lateral CD contribution during etch. Aside from process tuning knobs like pressure, RF powers and gases, which usually also affect CD linearity and CD uniformity, the simplest knob is the etch time itself. An increased over etch time results in an increased CD contribution in the normal case. , We found that the etch CD contribution of ARC layer etch on EUV photo masks is reduced by longer over etch times. Moreover, this effect can be demonstrated to be present for different etch chambers and photo resists.

  2. Bragg diffraction of fermions at optical potentials

    International Nuclear Information System (INIS)

    Deh, Benjamin

    2008-01-01

    This thesis describes the Bragg diffraction of ultracold fermions at an optical potential. A moving optical lattice was created, by overlaying two slightly detuned lasers. Atoms can be diffracted at this lattice if the detuning fulfills the Bragg condition for resting atoms. This Bragg diffraction is analyzed systematically in this thesis. To this end Rabi oscillations between the diffraction states were driven, as well in the weakly interacting Bragg regime, as in the strongly interacting Kapitza-Dirac regime. Simulations, based on a driven two-, respectively multilevel-system describe the observed effects rather well. Furthermore, the temporal evolution of the diffracted states in the magnetic trapping potential was studied. The anharmonicity of the trap in use and the scattering cross section for p-wave collisions in a 6 Li system was determined from the movement of these states. Moreover the momentum distribution of the fermions was measured with Bragg spectroscopy and first signs of Fermi degeneracy were found. Finally an interferometer with fermions was build, exhibiting a coherence time of more than 100 μs. With this, the possibility for measurement and manipulation of ultracold fermions with Bragg diffraction could bee shown. (orig.)

  3. Multiplexed FBG and etched fiber sensors for process and health monitoring of 2-&3-D RTM components

    OpenAIRE

    Keulen, Casey J.; Yıldız, Mehmet; Yildiz, Mehmet; Suleman, Afzal

    2011-01-01

    This paper presents research being conducted on the use of a combination of fiber optic sensors for process and health monitoring of resin transfer molded (RTM) composite structures. A laboratory scale RTM apparatus has been designed and built with the capability of visually monitoring the resin filling process and embedding fiber optic sensors into the composite. Fiber Bragg gratings (FBG) and etched fiber sensors (EFS) have been multiplexed and embedded in quasi-2-D panels and 3-D hollow se...

  4. Hybrid mask for deep etching

    KAUST Repository

    Ghoneim, Mohamed T.

    2017-01-01

    Deep reactive ion etching is essential for creating high aspect ratio micro-structures for microelectromechanical systems, sensors and actuators, and emerging flexible electronics. A novel hybrid dual soft/hard mask bilayer may be deposited during

  5. Thermodynamics of nuclear track chemical etching

    Science.gov (United States)

    Rana, Mukhtar Ahmed

    2018-05-01

    This is a brief paper with new and useful scientific information on nuclear track chemical etching. Nuclear track etching is described here by using basic concepts of thermodynamics. Enthalpy, entropy and free energy parameters are considered for the nuclear track etching. The free energy of etching is determined using etching experiments of fission fragment tracks in CR-39. Relationship between the free energy and the etching temperature is explored and is found to be approximately linear. The above relationship is discussed. A simple enthalpy-entropy model of chemical etching is presented. Experimental and computational results presented here are of fundamental interest in nuclear track detection methodology.

  6. Application of Fourier-Bessel technique for computing Eigen-states in a Bragg cylindrical space slot channel waveguide

    Science.gov (United States)

    Jafari, Seyed Hamed; Gauthier, Robert C.

    2015-02-01

    Maxwell's wave equations can be solved using different techniques in order to extract optical properties of a variety of dielectric structures. For structures that contain an extended axis which serve for the reference for cylindrical symmetry, we have shown that an expansion of the fields and inverse of the relative dielectric profile using a simplified and complete set of basis functions of Fourier-Bessel terms provide access to an eigenvalue formulation from which the eigen-states can be computed. We review the steps used to convert Maxwell's equation into an eigenvalue formulation, and then proceed to discuss several applications of the technique. For cylindrically symmetric structures, the computational technique provides a significantly reduced matrix order to be populated. New target structure for the presentation consists of cylindrical space slot channel waveguide in which the channel extends in azimuthal (ϕ) direction. The channel is provided by considering the etching of external side walls of "Bragg fiber". The configuration is similar to a structure that can support whispering-gallery modes, except that the modes highest field locations are within the ambient medium of the channel. Optical properties of this structure can be best examined through ?? field component which is discontinuous by ratio of relative dielectric constants when passing air-Bragg interfaces. The ability to select Bragg dielectric properties and to introduce non-uniformities in Bragg plane spacing provides access to tuning slot channel waveguide properties and design several novel configurations.

  7. A Nanoscale Plasma Etching Process for Pole Tip Recession of Perpendicular Recording Magnetic Head

    OpenAIRE

    LIU, Shoubin; HE, Dayao

    2017-01-01

    The pole tip of perpendicular recording head is constructed in a stacked structure with materials of NiCoFe, NiFe, Al2O3 and AlTiC. The surfaces of different materials are set at different heights below the air-bearing surface of slider. This paper presented a plasma dry etching process for Pole Tip Recession (PTR) based on an ion beam etching system. Ar and O2 mixed plasma at small incident angles have a high removal rate to the nonmagnetic material. It was utilised to etch the reference sur...

  8. Bragg Curve, Biological Bragg Curve and Biological Issues in Space Radiation Protection with Shielding

    Science.gov (United States)

    Honglu, Wu; Cucinotta, F.A.; Durante, M.; Lin, Z.; Rusek, A.

    2006-01-01

    The space environment consists of a varying field of radiation particles including high-energy ions, with spacecraft shielding material providing the major protection to astronauts from harmful exposure. Unlike low-LET gamma or X-rays, the presence of shielding does not always reduce the radiation risks for energetic charged particle exposure. Since the dose delivered by the charged particle increases sharply as the particle approaches the end of its range, a position known as the Bragg peak, the Bragg curve does not necessarily represent the biological damage along the particle traversal since biological effects are influenced by the track structure of both primary and secondary particles. Therefore, the biological Bragg curve is dependent on the energy and the type of the primary particle, and may vary for different biological endpoints. To achieve a Bragg curve distribution, we exposed cells to energetic heavy ions with the beam geometry parallel to a monolayer of fibroblasts. Qualitative analyses of gamma-H2AX fluorescence, a known marker of DSBs, indicated increased clustering of DNA damage before the Bragg peak, enhanced homogenous distribution at the peak, and provided visual evidence of high linear energy transfer (LET) particle traversal of cells beyond the Bragg peak. A quantitative biological response curve generated for micronuclei (MN) induction across the Bragg curve did not reveal an increased yield of MN at the location of the Bragg peak. However, the ratio of mono-to bi-nucleated cells, which indicates inhibition in cell progression, increased at the Bragg peak location. These results, along with other biological concerns, show that space radiation protection with shielding can be a complicated issue.

  9. Suitability of N2 plasma for the RIE etching of thin Ag layers

    International Nuclear Information System (INIS)

    Hrkut, P.; Matay, L.; Kostic, I.; Bencurova, A.; Konecnikova, A.; Nemec, P.; Andok, R.; Hacsik, S.

    2013-01-01

    Silver layers of 48 nm thickness were evaporated using EB PVD on Si wafers. The masking resist layers were spin-coated and patterned by the EBDW lithography on the ZBA 21 (20 keV) (Carl-Zeiss, Jena; currently Vistec, Ltd.) variable shaped e-beam pattern generator in II SAS. In order to check the etching process in N 2 , we covered a part of the samples containing Ag with a layer of various resists. The samples were dried on a hot-plate and RIE etched in SCM 600 (1 Pa; 20 sccm; 500 W). After 8 minutes the non-masked Ag layer was completely etched away, what testified suitability of N 2 as an etching gas. Also the etch time of 4 minutes showed to be sufficient for etching through the Ag layer. In order to optimize the etching process it was necessary to estimate the etch-rate (E.R.) of suitable resist layers and of the silver layer. The (authors)

  10. Nitride-based Schottky diodes and HFETs fabricated by photo-enhanced chemical wet etching

    International Nuclear Information System (INIS)

    Su, Y.K.; Chang, S.J.; Kuan, T.M.; Ko, C.H.; Webb, J.B.; Lan, W.H.; Cherng, Y.T.; Chen, S.C.

    2004-01-01

    Photo-enhanced chemical (PEC) wet etching technology was used to etch GaN and AlGaN epitaxial layers. It was found that the maximum etch rates were 510, 1960, 300, and 0 nm/mm for GaN, Al 0.175 Ga 0.825 N, Al 0.23 Ga 0.77 N, and Al 0.4 Ga 0.6 N, respectively. It was also found that we could achieve a high Al 0.175 Ga 0.825 N to GaN etch rate ratio of 12.6. Nitride-based Schottky diodes and heterostructure field effect transistors (HFETs) were also fabricated by PEC wet etching. It was found that we could achieve a saturated I D larger than 850 mA/mm and a maximum g m about 163 mS/mm from PEC wet etched HFET with a 0.5 μm gate length. Compared with dry etched devices, the leakage currents observed from the PEC wet etched devices were also found to be smaller

  11. A neural network for the Bragg synthetic curves recognition

    International Nuclear Information System (INIS)

    Reynoso V, M.R.; Vega C, J.J.; Fernandez A, J.; Belmont M, E.; Policroniades R, R.; Moreno B, E.

    1996-01-01

    A ionization chamber was employed named Bragg curve spectroscopy. The Bragg peak amplitude is a monotone growing function of Z, which permits to identify elements through their measurement. A better technique for this measurement is to improve the use of neural networks with the purpose of the identification of the Bragg curve. (Author)

  12. UV-assisted selective chemical etching of relief gratings in Er/Yb-codoped IOG1 phosphate glass

    Energy Technology Data Exchange (ETDEWEB)

    Pappas, C; Pissadakis, S [Foundation for Research and Technology-Hellas, Institute of Electronic Structure and Laser, Vasilika Vouton, PO Box 1527, Heraklion 71 110, GREECE (Greece)

    2007-04-15

    The patterning of sub-micron periodicity Bragg reflectors in Er/Yb-codoped IOG1, phosphate glass is demonstrated. A high yield patterning technique is presented, wherein high volume damage is induced into the glass matrix by exposure to intense UV radiation, and subsequently a chemical development in a strong acid selectively etches the exposed areas. The grating reflectors were fabricated by employing an elliptical Talbot interferometer and the output of a 213nm, 150ps frequency quintupled Nd:YAG laser. The grating depth of the etched relief pattern in time was measured at fixed time intervals and the dependence is presented in upon the etching time and exposure conditions. The gratings fabricated are examined by atomic and scanning electron microscopy for revealing the topology of the relief structure. Gratings with period of the order of 500nm were fabricated, having a maximum depth of 60nm.

  13. Laser etching as an alternative

    International Nuclear Information System (INIS)

    Dreyfus, R.W.; Kelly, R.

    1989-01-01

    Atoms and molecules are removed from surfaces by intense laser beams. This fact has been known almost since the discovery of the laser. Within the present overall area of interest, namely understanding ion-beam-induced sputtering, it is equally important both to contrast laser etching to ion sputtering and to understand the underlying physics taking place during laser etching. Beyond some initial broad observations, the specific discussion is limited to, and aimed at, two areas: (i) short wavelength, UV, laser-pulse effects and (ii) energy fluences sufficiently small that only monolayers (and not microns) of material are removed per pulse. 38 refs.; 13 figs.; 5 tabs

  14. Introducing etch kernels for efficient pattern sampling and etch bias prediction

    Science.gov (United States)

    Weisbuch, François; Lutich, Andrey; Schatz, Jirka

    2018-01-01

    Successful patterning requires good control of the photolithography and etch processes. While compact litho models, mainly based on rigorous physics, can predict very well the contours printed in photoresist, pure empirical etch models are less accurate and more unstable. Compact etch models are based on geometrical kernels to compute the litho-etch biases that measure the distance between litho and etch contours. The definition of the kernels, as well as the choice of calibration patterns, is critical to get a robust etch model. This work proposes to define a set of independent and anisotropic etch kernels-"internal, external, curvature, Gaussian, z_profile"-designed to represent the finest details of the resist geometry to characterize precisely the etch bias at any point along a resist contour. By evaluating the etch kernels on various structures, it is possible to map their etch signatures in a multidimensional space and analyze them to find an optimal sampling of structures. The etch kernels evaluated on these structures were combined with experimental etch bias derived from scanning electron microscope contours to train artificial neural networks to predict etch bias. The method applied to contact and line/space layers shows an improvement in etch model prediction accuracy over standard etch model. This work emphasizes the importance of the etch kernel definition to characterize and predict complex etch effects.

  15. A neural network for the Bragg synthetic curves recognition.; Una red neuronal para el reconocimiento de curvas de Bragg sinteticas

    Energy Technology Data Exchange (ETDEWEB)

    Reynoso V, M R; Vega C, J J; Fernandez A, J; Belmont M, E; Policroniades R, R; Moreno B, E [Instituto Nacional de Investigaciones Nucleares, Salazar, Edo. de Mexico. (Mexico)

    1997-12-31

    A ionization chamber was employed named Bragg curve spectroscopy. The Bragg peak amplitude is a monotone growing function of Z, which permits to identify elements through their measurement. A better technique for this measurement is to improve the use of neural networks with the purpose of the identification of the Bragg curve. (Author).

  16. Detection of Ammonia-Oxidizing Bacteria (AOB) Using a Porous Silicon Optical Biosensor Based on a Multilayered Double Bragg Mirror Structure.

    Science.gov (United States)

    Zhang, Hongyan; Lv, Jie; Jia, Zhenhong

    2018-01-01

    We successfully demonstrate a porous silicon (PS) double Bragg mirror by electrochemical etching at room temperature as a deoxyribonucleic acid (DNA) label-free biosensor for detecting ammonia-oxidizing bacteria (AOB). Compared to various other one-dimension photonic crystal configurations of PS, the double Bragg mirror structure is quite easy to prepare and exhibits interesting optical properties. The width of high reflectivity stop band of the PS double Bragg mirror is about 761 nm with a sharp and deep resonance peak at 1328 nm in the reflectance spectrum, which gives a high sensitivity and distinguishability for sensing performance. The detection sensitivity of such a double Bragg mirror structure is illustrated through the investigation of AOB DNA hybridization in the PS pores. The redshifts of the reflectance spectra show a good linear relationship with both complete complementary and partial complementary DNA. The lowest detection limit for complete complementary DNA is 27.1 nM and the detection limit of the biosensor for partial complementary DNA is 35.0 nM, which provides the feasibility and effectiveness for the detection of AOB in a real environment. The PS double Bragg mirror structure is attractive for widespread biosensing applications and provides great potential for the development of optical applications.

  17. Quasi-Bragg diffraction of atoms

    NARCIS (Netherlands)

    Domen, K.F.E.M.; Jansen, M.A.H.M.; Leeuwen, van K.A.H.

    2006-01-01

    We report on a novel atomic beamsplitter. It combines the advantages of Bragg scattering (transfer possible into a single, very high diffraction order due to adiabatic conservation of ‘transverse kinetic energy’) with the convenience of tuning the splitting angle simply by adjusting a magnetic

  18. Nuclear Bragg diffraction using synchrotron radiation

    International Nuclear Information System (INIS)

    Rueffer, R.; Gerdau, E.; Grote, M.; Hollatz, R.; Roehlsberger, R.; Rueter, H.D.; Sturhahn, W.

    1990-01-01

    Nuclear Bragg diffraction with synchrotron radiation as source will become a powerful new X-ray source in the A-region. This source exceeds by now the brilliance of conventional Moessbauer sources giving hyperfine spectroscopy further momentum. As examples applications to yttrium iron garnet (YIG) and iron borate will be discussed. (author)

  19. Femtosecond laser pulse written Volume Bragg Gratings

    Directory of Open Access Journals (Sweden)

    Richter Daniel

    2013-11-01

    Full Text Available Femtosecond laser pulses can be applied for structuring a wide range of ransparent materials. Here we want to show how to use this ability to realize Volume-Bragg-Gratings in various- mainly non-photosensitive - glasses. We will further present the characteristics of the realized gratings and a few elected applications that have been realized.

  20. Corrugated grating on organic multilayer Bragg reflector

    Science.gov (United States)

    Jaquet, Sylvain; Scharf, Toralf; Herzig, Hans Peter

    2007-08-01

    Polymeric multilayer Bragg structures are combined with diffractive gratings to produce artificial visual color effects. A particular effect is expected due to the angular reflection dependence of the multilayer Bragg structure and the dispersion caused by the grating. The combined effects can also be used to design particular filter functions and various resonant structures. The multilayer Bragg structure is fabricated by spin-coating of two different low-cost polymer materials in solution on a cleaned glass substrate. These polymers have a refractive index difference of about 0.15 and permit multilayer coatings without interlayer problems. Master gratings of different periods are realized by laser beam interference and replicated gratings are superimposed on the multilayer structure by soft embossing in a UV curing glue. The fabrication process requires only polymer materials. The obtained devices are stable and robust. Angular dependent reflection spectrums for the visible are measured. These results show that it is possible to obtain unexpected reflection effects. A rich variety of color spectra can be generated, which is not possible with a single grating. This can be explained by the coupling of transmission of grating orders and the Bragg reflection band. A simple model permits to explain some of the spectral vs angular dependence of reflected light.

  1. Neutron dosimetry using electrochemical etching

    International Nuclear Information System (INIS)

    Su, S.J.; Stillwagon, G.B.; Morgan, K.Z.

    1977-01-01

    Registration of α-tracks and fast-neutron-induced recoils tracks by the electrochemical etching technique as applied to sensitive polymer foils (e.g., polycarbonate) provides a simple, sensitive and inexpensive means of fast neutron personnel dosimetry as well as a valuable research tool for microdosimetry. When tracks were amplified by our electrochemical technique and the etching results compared with conventional etching technique a striking difference was noted. The electrochemically etched tracks were of much larger diameter (approx. 100 μm) and gave superior contrast. Two optical devices--the transparency projector and microfiche reader--were adapted to facilitate counting of the tracks appearing on our polycarbonate foils. The projector produced a magnification of 14X for a screen to projector distance of 5.0 meter and read's magnification was 50X. A Poisson distribution was determined for the number of tracks located in a particular area of the foil and experimentally verified by random counting of quarter sections of the microfiche reader screen. Finally, in an effort to determine dose equivalent (rem), a conversion factor is being determined by finding the sensitivity response (tracks/neutron) of recoil particle induced tracks as a function of monoenergetic fast neutrons and comparing results with those obtained by others

  2. High-density plasma etching of III-nitrides: Process development, device applications and damage remediation

    Science.gov (United States)

    Singh, Rajwinder

    Plasma-assisted etching is a key technology for III-nitride device fabrication. The inevitable etch damage resulting from energetic pattern transfer is a challenge that needs to be addressed in order to optimize device performance and reliability. This dissertation focuses on the development of a high-density inductively-coupled plasma (ICP) etch process for III-nitrides, the demonstration of its applicability to practical device fabrication using a custom built ICP reactor, and development of techniques for remediation of etch damage. A chlorine-based standard dry etch process has been developed and utilized in fabrication of a number of electronic and optoelectronic III-nitride devices. Annealing studies carried out at 700°C have yielded the important insight that the annealing time necessary for making good-quality metal contacts to etch processed n-GaN is very short (water, prior to metallization, removes some of the etch damage and is helpful in recovering contact quality. In-situ treatment consisting of a slow ramp-down of rf bias at the end of the etch is found to achieve the same effect as the ex-situ treatment. This insitu technique is significantly advantageous in a large-scale production environment because it eliminates a process step, particularly one involving treatment in hydrochloric acid. ICP equipment customization for scaling up the process to full 2-inch wafer size is described. Results on etching of state of the art 256 x 256 AlGaN focal plane arrays of ultraviolet photodetectors are reported, with excellent etch uniformity over the wafer area.

  3. Dry technologies for the production of crystalline silicon solar cells; Trockentechnologien zur Herstellung von kristallinen Siliziumsolarzellen

    Energy Technology Data Exchange (ETDEWEB)

    Rentsch, J.

    2005-04-15

    Within this work, dynamic plasma etching technologies for the industrial production of crystalline silicon solar cells has been investigated. The research activity can be separated into three major steps: the characterisation of the etching behaviour of a newly developed dynamic plasma etching system, the development and analysis of dry etching processes for solar cell production and the determination of the ecological and economical impacts of such a new technology compared to standard up to date technologies. The characterisation of the etching behaviour has been carried out for two different etching sources, a low frequency (110 kHz) and a microwave (2.45 GHz) plasma source. The parameter of interest was the delivered ion energy of each source mainly determining the reachable etch rate. The etch rate turned out to be the main most critical parameter concerning the reachable wafer throughput per hour. Other points of interest in characterisation of the etching system were the material of the transport carriers, the silicon load as well as the process temperatures. The development of different dry etching processes targets the design of a complete dry production process for crystalline silicon solar cells. Therefore etching processes for saw damage removal, texturing, edge isolation as well as etching of dielectric layers have been developed and optimised. The major benefits of a complete dry production process would be the reduction of handling steps in between process steps and therefore offers a large cost reduction potential. For multicrystalline silicon solar cells a cost reduction potential of 5 % compared to a standard wet chemical based reference process could be realized only including the dry etching of a phosphorus silicate glass layer after diffusion. Further reduction potential offers the implementation of a dry texturing process due to a significant efficiency increase. (orig.)

  4. Self-etching ceramic primer versus hydrofluoric acid etching: Etching efficacy and bonding performance.

    Science.gov (United States)

    El-Damanhoury, Hatem M; Gaintantzopoulou, Maria D

    2018-01-01

    This study assessed the effect of pretreatment of hybrid and glass ceramics using a self-etching primer on the shear bond strength (SBS) and surface topography, in comparison to pretreatment with hydrofluoric acid and silane. 40 rectangular discs from each ceramic material (IPS e.max CAD;EM, Vita Mark II;VM, Vita Enamic;VE), were equally divided (n=10) and assigned to one of four surface pretreatment methods; etching with 4.8% hydrofluoric acid followed by Monobond plus (HFMP), Monobond etch & prime (Ivoclar Vivadent) (MEP), No treatment (NT) as negative control and Monobond plus (Ivoclar Vivadent) with no etching (MP) as positive control. SBS of resin cement (Multilink-N, Ivoclar Vivadent) to ceramic surfaces was tested following a standard protocol. Surface roughness was evaluated using an Atomic force microscope (AFM). Surface topography and elemental analysis were analyzed using SEM/EDX. Data were analyzed with two-way analysis of variance (ANOVA) and post-hoc Bonferroni test at a significance level of α=0.05. Pretreatment with HFMP resulted in higher SBS and increased surface roughness in comparison to MEP and MP. Regardless the method of surface pretreatment, the mean SBS values of EM ceramic was significantly higher (pceramics for resin-luting cementation. Copyright © 2017 Japan Prosthodontic Society. Published by Elsevier Ltd. All rights reserved.

  5. Quadrilateral Micro-Hole Array Machining on Invar Thin Film: Wet Etching and Electrochemical Fusion Machining

    Directory of Open Access Journals (Sweden)

    Woong-Kirl Choi

    2018-01-01

    Full Text Available Ultra-precision products which contain a micro-hole array have recently shown remarkable demand growth in many fields, especially in the semiconductor and display industries. Photoresist etching and electrochemical machining are widely known as precision methods for machining micro-holes with no residual stress and lower surface roughness on the fabricated products. The Invar shadow masks used for organic light-emitting diodes (OLEDs contain numerous micro-holes and are currently machined by a photoresist etching method. However, this method has several problems, such as uncontrollable hole machining accuracy, non-etched areas, and overcutting. To solve these problems, a machining method that combines photoresist etching and electrochemical machining can be applied. In this study, negative photoresist with a quadrilateral hole array pattern was dry coated onto 30-µm-thick Invar thin film, and then exposure and development were carried out. After that, photoresist single-side wet etching and a fusion method of wet etching-electrochemical machining were used to machine micro-holes on the Invar. The hole machining geometry, surface quality, and overcutting characteristics of the methods were studied. Wet etching and electrochemical fusion machining can improve the accuracy and surface quality. The overcutting phenomenon can also be controlled by the fusion machining. Experimental results show that the proposed method is promising for the fabrication of Invar film shadow masks.

  6. Optical fiber refractometer based on tapered tilted-fiber Bragg grating

    Science.gov (United States)

    Wang, Tao; Liu, Tiegen; Liu, Kun; Jiang, Junfeng; Yu, Zhe; Xue, Meng

    2016-11-01

    Tilted fiber Bragg gratings (TFBGs) have been demonstrated to be accurate refractometers as they couple light from the fiber core to the cladding. In our experiment, we changed the physical structure of the TFBGs to improve the refractive index sensing ability. One way is to stretch the grating section 5 mm longer. The result showed that not only the number of the cladding mode of the TFBG decreases but also the full width half-maximum (FWHM) of the cladding modes and core mode changes. The FWHM of the cladding mode of the tapered TFBG is more than twice than that of the original. However, the refractive index sensitivity of the tapered TFBG has no obvious improvement. Another way is to etch the grating section with 20% hydrofluoric acid solution. We find that the smaller the clad diameter, the higher the refractive index sensitivity of the TFBG.

  7. Process for etching zirconium metallic objects

    International Nuclear Information System (INIS)

    Panson, A.J.

    1988-01-01

    In a process for etching of zirconium metallic articles formed from zirconium or a zirconium alloy, wherein the zirconium metallic article is contacted with an aqueous hydrofluoric acid-nitric acid etching bath having an initial ratio of hydrofluoric acid to nitric acid and an initial concentration of hydrofluoric and nitric acids, the improvement, is described comprising: after etching of zirconium metallic articles in the bath for a period of time such that the etching rate has diminished from an initial rate to a lesser rate, adding hydrofluoric acid and nitric acid to the exhausted bath to adjust the concentration and ratio of hydrofluoric acid to nitric acid therein to a value substantially that of the initial concentration and ratio and thereby regenerate the etching solution without removal of dissolved zirconium therefrom; and etching further zirconium metallic articles in the regenerated etching bath

  8. Reactive ion beam etching for microcavity surface emitting laser fabrication: technology and damage characterization

    International Nuclear Information System (INIS)

    Matsutani, A.; Tadokoro, T.; Koyama, F.; Iga, K.

    1993-01-01

    Reactive ion beam etching (RIBE) is an effective dry etching technique for the fabrication of micro-sized surface emitting (SE) lasers and optoelectronic devices. In this chapter, some etching characteristics for GaAs, InP and GaInAsP with a Cl 2 gas using an RIBE system are discussed. Micro-sized circular mesas including GaInAsP/InP multilayers with vertical sidewalls were fabricated. RIBE-induced damage in InP substrates was estimated by C-V and PL measurement. In addition, the removal of the induced damage by the second RIBE with different conditions for the InP wafer was proposed. The sidewall damage is characterized by photoluminescence emitted from the etched sidewall of a GaInAsP/InP DH wafer. (orig.)

  9. Dry release of all-polymer structures

    DEFF Research Database (Denmark)

    Haefliger, D.; Nordstrøm, M.; Rasmussen, Peter Andreas

    2005-01-01

    We present a simple dry release technique which uses a thin fluorocarbon film for efficient removal of plastic microdevices from a mould or a handling substrate by reducing the adhesion between the two. This fluorocarbon film is deposited on the substrate in an advanced Si dry etch device utilisi...... 100% were demonstrated on wafer-scale. The fluorocarbon film showed excellent compatibility with metal etch processes and polymer baking and curing steps. It further facilitates demoulding of polydimethylsiloxane stamps suitable for soft-lithography....

  10. Stereotactic Bragg peak proton radiosurgery method

    International Nuclear Information System (INIS)

    Kjellberg, R.N.

    1979-01-01

    A brief description of the technical aspects of a stereotactic Bragg peak proton radiosurgical method for the head is presented. The preparatory radiographic studies are outlined and the stereotactic instrument and positioning of the patient are described. The instrument is so calibrated that after corrections for soft tissue and bone thickness, the Bragg peak superimposes upon the intracranial target. The head is rotated at specific intervals to allow predetermined portals of access for the beam path, all of which converge on the intracranial target. Normally, portals are arranged to oppose and overlap from both sides of the head. Using a number of beams (in sequence) on both sides of the head, the target dose is far greater than the path dose. The procedure normally takes 3/2-2 hours, following which the patient can walk away. (Auth./C.F.)

  11. Methods of etching a substrate

    Energy Technology Data Exchange (ETDEWEB)

    Cosmo, J J; Gambino, R J; Harper, J M.E.

    1979-05-16

    The invention relates to a method of etching a substrate. The substrate is located opposite a target electrode in a vacuum chamber, and the surface of the target electrode is bombarded with energetic particles of atomic dimensions. The target electrode is an intermetallic composition (compound, alloy or finely divided homogeneous mixture) of two metals A and B such that upon bombardment the electrode emits negative ions of metal B which have sufficient energy to produce etching of the substrate. Many target materials are exemplified. Typically the metal A has an electronegativity XA and metal B has an electronegativity XB such that Xb - Xa is greater than about 2.55 electron volts, with the exception of combinations of metals having a fractional ionicity Q less than about 0.314. The source of the energetic particles may be an ionised gas in the vacuum chamber. The apparatus and its mode of operation are described in detail.

  12. Methods of etching a substrate

    International Nuclear Information System (INIS)

    Cosmo, J.J.; Gambino, R.J.; Harper, J.M.E.

    1979-01-01

    The invention relates to a method of etching a substrate. The substrate is located opposite a target electrode in a vacuum chamber, and the surface of the target electrode is bombarded with energetic particles of atomic dimensions. The target electrode is an intermetallic composition (compound, alloy or finely divided homogeneous mixture) of two metals A and B such that upon bombardment the electrode emits negative ions of metal B which have sufficient energy to produce etching of the substrate. Many target materials are exemplified. Typically the metal A has an electronegativity XA and metal B has an electronegativity XB such that Xb - Xa is greater than about 2.55 electron volts, with the exception of combinations of metals having a fractional ionicity Q less than about 0.314. The source of the energetic particles may be an ionised gas in the vacuum chamber. The apparatus and its mode of operation are described in detail. (U.K.)

  13. Hybrid mask for deep etching

    KAUST Repository

    Ghoneim, Mohamed T.

    2017-08-10

    Deep reactive ion etching is essential for creating high aspect ratio micro-structures for microelectromechanical systems, sensors and actuators, and emerging flexible electronics. A novel hybrid dual soft/hard mask bilayer may be deposited during semiconductor manufacturing for deep reactive etches. Such a manufacturing process may include depositing a first mask material on a substrate; depositing a second mask material on the first mask material; depositing a third mask material on the second mask material; patterning the third mask material with a pattern corresponding to one or more trenches for transfer to the substrate; transferring the pattern from the third mask material to the second mask material; transferring the pattern from the second mask material to the first mask material; and/or transferring the pattern from the first mask material to the substrate.

  14. Novel method of dual fiber Bragg gratings integrated in fiber ring laser for biochemical sensors

    Science.gov (United States)

    Bui, H.; Pham, T. B.; Nguyen, V. A.; Pham, V. D.; Do, T. C.; Nguyen, T. V.; Hoang, T. H. C.; Le, H. T.; Pham, V. H.

    2018-05-01

    Optical sensors have been shown to be very effective for measuring the toxic content in liquid and air environments. Optical sensors, which operate based on the wavelength shift of the optical signals, require an expensive spectrometer. In this paper, we propose a new configuration of the optical sensor device for measuring wavelength shift without using a spectrometer. This configuration has a large potential for application in biochemical sensing techniques, and comes with a low cost. This configuration uses dual fiber Bragg gratings (FBGs) integrated in a fiber ring laser structure of erbium-doped fiber, in which one FBG is used as a reference to sweep over the applicable spectrum of the etched-Bragg grating. The etched-FBG as a sensing probe is suitable for bio- and/or chemical sensors. The sensitivity and accuracy of the sensor system can be improved by the narrow linewidth of emission spectra from the laser, the best limit of detection of this sensor is 1.5  ×  10‑4 RIU (RIU: refractive index unit), as achieved by the optical sensor using a high resolution spectrometer. This sensor system has been experimentally investigated to detect different types of organic compounds, gasoline, mixing ratios of organic solvents in gasoline, and nitrate concentration in water samples. The experimental results show that this sensing method could determine different mixing ratios of organic solvents with good repeatability, high accuracy, and rapid response: e.g. for ethanol and/or methanol in gasoline RON 92 (RON: research octane number) of 0%–14% v/v, and nitrate in water samples at a low concentration range of 0–50 ppm. These results suggest that the proposed configuration can construct low-cost and accurate biochemical sensors.

  15. Thermal history-based etching

    Science.gov (United States)

    Simpson, John T.

    2017-11-28

    A method for adjusting an etchability of a first borosilicate glass by heating the first borosilicate glass; combining the first borosilicate glass with a second borosilicate glass to form a composite; and etching the composite with an etchant. A material having a protrusive phase and a recessive phase, where the protrusive phase protrudes from the recessive phase to form a plurality of nanoscale surface features, and where the protrusive phase and the recessive phase have the same composition.

  16. Study of Thermal Electrical Modified Etching for Glass and Its Application in Structure Etching

    Directory of Open Access Journals (Sweden)

    Zhan Zhan

    2017-02-01

    Full Text Available In this work, an accelerating etching method for glass named thermal electrical modified etching (TEM etching is investigated. Based on the identification of the effect in anodic bonding, a novel method for glass structure micromachining is proposed using TEM etching. To validate the method, TEM-etched glasses are prepared and their morphology is tested, revealing the feasibility of the new method for micro/nano structure micromachining. Furthermore, two kinds of edge effect in the TEM and etching processes are analyzed. Additionally, a parameter study of TEM etching involving transferred charge, applied pressure, and etching roughness is conducted to evaluate this method. The study shows that TEM etching is a promising manufacture method for glass with low process temperature, three-dimensional self-control ability, and low equipment requirement.

  17. Two-year Randomized Clinical Trial of Self-etching Adhesives and Selective Enamel Etching.

    Science.gov (United States)

    Pena, C E; Rodrigues, J A; Ely, C; Giannini, M; Reis, A F

    2016-01-01

    The aim of this randomized, controlled prospective clinical trial was to evaluate the clinical effectiveness of restoring noncarious cervical lesions with two self-etching adhesive systems applied with or without selective enamel etching. A one-step self-etching adhesive (Xeno V(+)) and a two-step self-etching system (Clearfil SE Bond) were used. The effectiveness of phosphoric acid selective etching of enamel margins was also evaluated. Fifty-six cavities were restored with each adhesive system and divided into two subgroups (n=28; etch and non-etch). All 112 cavities were restored with the nanohybrid composite Esthet.X HD. The clinical effectiveness of restorations was recorded in terms of retention, marginal integrity, marginal staining, caries recurrence, and postoperative sensitivity after 3, 6, 12, 18, and 24 months (modified United States Public Health Service). The Friedman test detected significant differences only after 18 months for marginal staining in the groups Clearfil SE non-etch (p=0.009) and Xeno V(+) etch (p=0.004). One restoration was lost during the trial (Xeno V(+) etch; p>0.05). Although an increase in marginal staining was recorded for groups Clearfil SE non-etch and Xeno V(+) etch, the clinical effectiveness of restorations was considered acceptable for the single-step and two-step self-etching systems with or without selective enamel etching in this 24-month clinical trial.

  18. Influence of Pre-etching Times on Fatigue Strength of Self-etch Adhesives to Enamel.

    Science.gov (United States)

    Takamizawa, Toshiki; Barkmeier, Wayne W; Tsujimoto, Akimasa; Endo, Hajime; Tsuchiya, Kenji; Erickson, Robert L; Latta, Mark A; Miyazaki, Masashi

    To use shear bond strength (SBS) and shear fatigue strength (SFS) testing to determine the influence of phosphoric acid pre-etching times prior to application of self-etch adhesives on enamel bonding. Two single-step self-etch universal adhesives (Prime&Bond Elect and Scotchbond Universal), a conventional single-step self-etch adhesive (G-ӕnial Bond), and a conventional two-step self-etch adhesive (OptiBond XTR) were used. The SBS and SFS were obtained with phosphoric acid pre-etching for 3, 10, or 15 s prior to application of the adhesives, and without pre-etching (0 s) as a control. A staircase method was used to determine the SFS with 10 Hz frequency for 50,000 cycles or until failure occurred. The mean demineralization depth for each treated enamel surface was also measured using a profilometer. For all the adhesives, the groups with pre-etching showed significantly higher SBS and SFS than groups without pre-etching. However, there was no significant difference in SBS and SFS among groups with > 3 s of preetching. In addition, although the groups with pre-etching showed significantly deeper demineralization depths than groups without pre-etching, there was no significant difference in depth among groups with > 3 s of pre-etching. Three seconds of phosphoric acid pre-etching prior to application of self-etch adhesive can enhance enamel bonding effectiveness.

  19. Sensitive detection of C-reactive protein using optical fiber Bragg gratings.

    Science.gov (United States)

    Sridevi, S; Vasu, K S; Asokan, S; Sood, A K

    2015-03-15

    An accurate and highly sensitive sensor platform has been demonstrated for the detection of C-reactive protein (CRP) using optical fiber Bragg gratings (FBGs). The CRP detection has been carried out by monitoring the shift in Bragg wavelength (ΔλB) of an etched FBG (eFBG) coated with an anti-CRP antibody (aCRP)-graphene oxide (GO) complex. The complex is characterized by Fourier transform infrared spectroscopy, X-ray photoelectron spectroscopy and atomic force microscopy. A limit of detection of 0.01mg/L has been achieved with a linear range of detection from 0.01mg/L to 100mg/L which includes clinical range of CRP. The eFBG sensor coated with only aCRP (without GO) show much less sensitivity than that of aCRP-GO complex coated eFBG. The eFBG sensors show high specificity to CRP even in the presence of other interfering factors such as urea, creatinine and glucose. The affinity constant of ∼1.1×10(10)M(-1) has been extracted from the data of normalized shift (ΔλB/λB) as a function of CRP concentration. Copyright © 2014 Elsevier B.V. All rights reserved.

  20. Fabrication of Fiber Bragg Grating Coating with TiO2 Nanostructured Metal Oxide for Refractive Index Sensor

    Directory of Open Access Journals (Sweden)

    Shaymaa Riyadh Tahhan

    2017-01-01

    Full Text Available To increase the sensitivity of biosensor a new approach using an optical fiber Bragg grating (FBG coated with a suitable nanostructured metal oxide (NMO is proposed which is costly effective compared to other biosensors. Bragg grating was written on a D-shaped optical fiber by phase mask method using a 248 nm KrF excimer laser for a 5 min exposure time producing a grating with a period of 528 nm. Titanium dioxide (TiO2 nanostructured metal oxide was coated over the fiber for the purpose of increasing its sensing area. The etched D-shaped FBG was then coated with 312 nm thick TiO2 nanostructured layer to ensure propagating the radiation modes within the core. The final structure was used to sense deionized water and saline. The etched D-shaped FBG original sensitivity before coating to air-deionized water and to air-saline was 0.314 nm/riu and 0.142 nm/riu, respectively. After coating the sensitivity became 1.257 nm/riu for air-deionized water and 0.857 nm/riu for air-saline.

  1. A study on decontamination of TRU, Co, and Mo using plasma surface etching technique

    International Nuclear Information System (INIS)

    Seo, Y.D.; Kim, Y.S.; Paek, S.H.; Lee, K.H.; Jung, C.H.; Oh, W.Z.

    2001-01-01

    Recently dry decontamination/surface-cleaning technology using plasma etching has been focused in the nuclear industry. In this study, the applicability and the effectiveness of this new dry processing technique are experimentally investigated by examining the etching reaction of UO 2 , Co, and Mo in r.f. plasma with the etchant gas of CF 4 /O 2 mixture. UO 2 is chosen as a representing material for uranium and TRU (TRans-Uranic) compounds and metallic Co and Mo are selected because they are the principal contaminants in the spent nuclear components such as valves and pipes made of stainless steel or INCONEL. Results show that in all cases maximum etching rate is achieved when the mole fraction of O 2 to CF 4 /O 2 mixture gas is 20 %, regardless of temperature and r.f. power. (author)

  2. The etching behaviour of silicon carbide compacts

    International Nuclear Information System (INIS)

    Jepps, N.W.; Page, T.F.

    1981-01-01

    A series of microstructural investigations has been undertaken in order to explore the reliability of particular etches in revealing microstructural detail in silicon carbide compacts. A series of specimens has been etched and examined following complete prior microstructural characterization by transmission electron microscopy (TEM), scanning electron microscopy (SEM) and X-ray diffractometry techniques. In particular, the sensitivity of both a molten salt (KOH/KNO 3 ) etch and a commonly-used oxidizing electrolytic 'colour' etch to crystal purity, crystallographic orientation and polytypic structure has been established. The molten salt etch was found to be sensitive to grain boundaries and stacking disorder while the electrolytic etch was found to be primarily sensitive to local purity and crystallographic orientation. Neither etch appeared intrinsically polytype sensitive. Specifically, for the 'colour' etch, the p- or n-type character of impure regions appears critical in controlling etching behaviour; p-type impurities inhibiting, and n-type impurities enhancing, oxidation. The need to interpret etching behaviour in a manner consistent with the results obtained by a variety of other microstructural techniques will be emphasized. (author)

  3. Experimental and theoretical study of Bragg-Fresnel focalizing optical systems engraved on multi layers interferential mirrors adapted to X and X-UV fields

    International Nuclear Information System (INIS)

    Idir, M.

    1995-02-01

    This work concerns the study of a particular type of X-ray focusing optics known as Bragg-Fresnel lenses, formed through ion-etching of multilayered structures. Using the Super-ACO (LURE/Orsay) synchrotron storage ring, we tested several Bragg-Fresnel lenses having either linear or elliptical geometries (producing a line or a point focus, respectively). Diffraction profiles were first obtained for the linear lenses ion-etched on W/Si multilayers of nano-metric period. The experimental results were compared with our theoretical predictions. We next proposed and tested a solution to the problem superposing the different diffraction orders in the focal plane, that of fabricating Bragg-Fresnel lenses with an off-axis configuration, first for the linear and then the elliptical geometry. An experimental application, for an off-axis elliptical lens produced a focused X-ray spot of 5 x 10 microns 2 for the Super-ACO synchrotron source. The same lens also produced a 1/3-size X-ray image of a grid-like object at 1750 eV using the first and third diffraction orders. (author)

  4. Optical fibre Bragg gratings at harmonics of the Bragg wavelength and their sensing properties

    International Nuclear Information System (INIS)

    Collins, Stephen F; Sidiroglou, Fotios; Bal, Harpreet K; Baxter, Greg W; Wade, Scott A

    2013-01-01

    Spectral features in optical fibre Bragg gratings (FBGs) at various harmonics of the Bragg wavelength arise due to saturation of the writing process. Additionally, phase-mask-produced FBGs possess a complex refractive index pattern, producing an extra periodicity equal to the phase-mask periodicity that supplements the desired periodicity of half that of the phase-mask, as shown via differential interference contrast microscopy. Some spectral peaks or dips occur as doublets with a wavelength spacing that depends upon fibre alignment relative to the phase mask. These spectral properties are of importance, as they allow the realization of alternative FBG sensors of various measurands. (paper)

  5. Plasma etching of electrospun polymeric nanofibres

    Energy Technology Data Exchange (ETDEWEB)

    Verdonck, Patrick [LSI-PSI-EPUSP, Av. Prof. Luciano Gualberto trav 3, 158, 05508-900 Sao Paulo, SP (Brazil)]. E-mail: verdonck@imec.be; Braga Caliope, Priscila [LSI-PSI-EPUSP, Av. Prof. Luciano Gualberto trav 3, 158, 05508-900 Sao Paulo, SP (Brazil); Moral Hernandez, Emilio del [LSI-PSI-EPUSP, Av. Prof. Luciano Gualberto trav 3, 158, 05508-900 Sao Paulo, SP (Brazil); Silva, Ana Neilde R. da [LSI-PSI-EPUSP, Av. Prof. Luciano Gualberto trav 3, 158, 05508-900 Sao Paulo, SP (Brazil); FATEC-SP, Pca Fernando Prestes, 30 Sao Paulo, SP (Brazil)

    2006-10-25

    Electrospun polymeric nanofibres have several applications because of their high surface area to volume and high length to diameter ratios. This paper investigates the influence of plasma etching on these fibres and the etching mechanisms. For the characterization, SEM analysis was performed to determine the forms and shapes of the fibres and SEM photos were analysed by the technique of mathematical morphology, in order to determine the area on the sample occupied by the fibres and the frequency distribution of the nanofibre diameters. The results showed that the oxygen plasma etches the nanofibres much faster when ion bombardment is present. The form of the fibres is not altered by the etching, indicating the possibility of transport of oxygen atoms over the fibre surface. The most frequent diameter, somewhat surprisingly, is not significantly dependent on the etching process, and remains of the order of 80 nm, indicating that fibres with smaller diameters are etched at high rates.

  6. Damage-Free Smooth-Sidewall InGaAs Nanopillar Array by Metal-Assisted Chemical Etching.

    Science.gov (United States)

    Kong, Lingyu; Song, Yi; Kim, Jeong Dong; Yu, Lan; Wasserman, Daniel; Chim, Wai Kin; Chiam, Sing Yang; Li, Xiuling

    2017-10-24

    Producing densely packed high aspect ratio In 0.53 Ga 0.47 As nanostructures without surface damage is critical for beyond Si-CMOS nanoelectronic and optoelectronic devices. However, conventional dry etching methods are known to produce irreversible damage to III-V compound semiconductors because of the inherent high-energy ion-driven process. In this work, we demonstrate the realization of ordered, uniform, array-based In 0.53 Ga 0.47 As pillars with diameters as small as 200 nm using the damage-free metal-assisted chemical etching (MacEtch) technology combined with the post-MacEtch digital etching smoothing. The etching mechanism of In x Ga 1-x As is explored through the characterization of pillar morphology and porosity as a function of etching condition and indium composition. The etching behavior of In 0.53 Ga 0.47 As, in contrast to higher bandgap semiconductors (e.g., Si or GaAs), can be interpreted by a Schottky barrier height model that dictates the etching mechanism constantly in the mass transport limited regime because of the low barrier height. A broader impact of this work relates to the complete elimination of surface roughness or porosity related defects, which can be prevalent byproducts of MacEtch, by post-MacEtch digital etching. Side-by-side comparison of the midgap interface state density and flat-band capacitance hysteresis of both the unprocessed planar and MacEtched pillar In 0.53 Ga 0.47 As metal-oxide-semiconductor capacitors further confirms that the surface of the resultant pillars is as smooth and defect-free as before etching. MacEtch combined with digital etching offers a simple, room-temperature, and low-cost method for the formation of high-quality In 0.53 Ga 0.47 As nanostructures that will potentially enable large-volume production of In 0.53 Ga 0.47 As-based devices including three-dimensional transistors and high-efficiency infrared photodetectors.

  7. Etching radical controlled gas chopped deep reactive ion etching

    Science.gov (United States)

    Olynick, Deidre; Rangelow, Ivo; Chao, Weilun

    2013-10-01

    A method for silicon micromachining techniques based on high aspect ratio reactive ion etching with gas chopping has been developed capable of producing essentially scallop-free, smooth, sidewall surfaces. The method uses precisely controlled, alternated (or chopped) gas flow of the etching and deposition gas precursors to produce a controllable sidewall passivation capable of high anisotropy. The dynamic control of sidewall passivation is achieved by carefully controlling fluorine radical presence with moderator gasses, such as CH.sub.4 and controlling the passivation rate and stoichiometry using a CF.sub.2 source. In this manner, sidewall polymer deposition thicknesses are very well controlled, reducing sidewall ripples to very small levels. By combining inductively coupled plasmas with controlled fluorocarbon chemistry, good control of vertical structures with very low sidewall roughness may be produced. Results show silicon features with an aspect ratio of 20:1 for 10 nm features with applicability to nano-applications in the sub-50 nm regime. By comparison, previous traditional gas chopping techniques have produced rippled or scalloped sidewalls in a range of 50 to 100 nm roughness.

  8. Surface etching technologies for monocrystalline silicon wafer solar cells

    Science.gov (United States)

    Tang, Muzhi

    With more than 200 GW of accumulated installations in 2015, photovoltaics (PV) has become an important green energy harvesting method. The PV market is dominated by solar cells made from crystalline silicon wafers. The engineering of the wafer surfaces is critical to the solar cell cost reduction and performance enhancement. Therefore, this thesis focuses on the development of surface etching technologies for monocrystalline silicon wafer solar cells. It aims to develop a more efficient alkaline texturing method and more effective surface cleaning processes. Firstly, a rapid, isopropanol alcohol free texturing method is successfully demonstrated to shorten the process time and reduce the consumption of chemicals. This method utilizes the special chemical properties of triethylamine, which can form Si-N bonds with wafer surface atoms. Secondly, a room-temperature anisotropic emitter etch-back process is developed to improve the n+ emitter passivation. Using this method, 19.0% efficient screen-printed aluminium back surface field solar cells are developed that show an efficiency gain of 0.15% (absolute) compared with conventionally made solar cells. Finally, state-of-the-art silicon surface passivation results are achieved using hydrogen plasma etching as a dry alternative to the classical hydrofluoric acid wet-chemical process. The effective native oxide removal and the hydrogenation of the silicon surface are shown to be the reasons for the excellent level of surface passivation achieved with this novel method.

  9. Etching conditions and shape of tracks

    International Nuclear Information System (INIS)

    Kudo, Shuichi

    1979-01-01

    The etching effect of hydrogen fluoride (HF) solution of 5%, 10%, 20% and 46% was investigated, using the perlite dug out at Wada-toge, Japan. They were studied by the progressive etching at 30 deg C, after the perlite was subjected to thermal neutron irradiation for 8 hours in the research reactor of the Institute for Atomic Energy of St. Paul (Rikkyo) University. Observation was performed mainly by replica, and false tracks, which are difficult to be judged whether they are the tracks or not, didn't appear as far as this experiment was concerned. Measurements of etch-pits and track density were carried out. The results of these investigations were considered and analyzed to describe them in five sections. The conclusions are as follows: (1) Regarding the ease of etch-pit observation and the adjustment of etching time, etching with 5% HF solution is most advantageous among four solutions of 5, 10, 20 and 46% HF. (2) The measurement of track density is more affected by the difference in counting criteria than the difference in etching conditions. The data on the size of etch-pits are required to discuss the problems of track density and counting efficiency. (3) If linear tracks are to be observed using hydrogen fluoride, it is necessary to investigate the etching characteristics with the solution of lower concentration. (Wakatsuki, Y.)

  10. Silicon germanium mask for deep silicon etching

    KAUST Repository

    Serry, Mohamed

    2014-07-29

    Polycrystalline silicon germanium (SiGe) can offer excellent etch selectivity to silicon during cryogenic deep reactive ion etching in an SF.sub.6/O.sub.2 plasma. Etch selectivity of over 800:1 (Si:SiGe) may be achieved at etch temperatures from -80 degrees Celsius to -140 degrees Celsius. High aspect ratio structures with high resolution may be patterned into Si substrates using SiGe as a hard mask layer for construction of microelectromechanical systems (MEMS) devices and semiconductor devices.

  11. Silicon germanium mask for deep silicon etching

    KAUST Repository

    Serry, Mohamed; Rubin, Andrew; Refaat, Mohamed; Sedky, Sherif; Abdo, Mohammad

    2014-01-01

    Polycrystalline silicon germanium (SiGe) can offer excellent etch selectivity to silicon during cryogenic deep reactive ion etching in an SF.sub.6/O.sub.2 plasma. Etch selectivity of over 800:1 (Si:SiGe) may be achieved at etch temperatures from -80 degrees Celsius to -140 degrees Celsius. High aspect ratio structures with high resolution may be patterned into Si substrates using SiGe as a hard mask layer for construction of microelectromechanical systems (MEMS) devices and semiconductor devices.

  12. Etching.

    Science.gov (United States)

    1980-09-01

    4 - 0 2- G xC 0 .- 04.410Zt .0 f.-C 13-a U Z W:; LU OU SS 0 L = 0 . 6c C! tun a.- I- -. 4 *CZ=U K 0 2N 0 (3 A LWE’-0 Z W Z4 £C 0.C ?A C. V;, 4US CI US...z Q. cm -2 C’S *-D WX 4 an 0 N 4 W 0(A1 -O 0-C -C ZaW U. aNi x 400 C O CD0 0 00Ix - WA - C 0 0 C A. J -4 * 0-4 w~ aT L C M 0n N U- X ZOWO 2 %-0 IM

  13. Self-etch and etch-and-rinse adhesive systems in clinical dentistry.

    Science.gov (United States)

    Ozer, Fusun; Blatz, Markus B

    2013-01-01

    Current adhesive systems follow either an "etch-and-rinse" or "self-etch" approach, which differ in how they interact with natural tooth structures. Etch-and-rinse systems comprise phosphoric acid to pretreat the dental hard tissues before rinsing and subsequent application of an adhesive. Self-etch adhesives contain acidic monomers, which etch and prime the tooth simultaneously. Etch-and-rinse adhesives are offered as two- or three-step systems, depending on whether primer and bonding are separate or combined in a single bottle. Similarly, self-etch adhesives are available as one- or two-step systems. Both etch-and-rinse and self-etch systems form a hybrid layer as a result of resins impregnating the porous enamel or dentin. Despite current trends toward fewer and simpler clinical application steps, one-step dentin bonding systems exhibit bonding agent lower bond strengths and seem less predictable than multi-step etch-and-rinse and self-etch systems. The varying evidence available today suggests that the choice between etch-and-rinse and self-etch systems is often a matter of personal preference. In general, however, phosphoric acid creates a more pronounced and retentive etching pattern in enamel. Therefore, etch-and-rinse bonding systems are often preferred for indirect restorations and when large areas of enamel are still present. Conversely, self-etch adhesives provide superior and more predictable bond strength to dentin and are, consequently, recommended for direct composite resin restorations, especially when predominantly supported by dentin.

  14. Dry Eye

    Science.gov (United States)

    ... Eye » Facts About Dry Eye Listen Facts About Dry Eye Fact Sheet Blurb The National Eye Institute (NEI) ... and their families search for general information about dry eye. An eye care professional who has examined the ...

  15. Fiber Bragg Grating Sensors for Harsh Environments

    Directory of Open Access Journals (Sweden)

    Stephen J. Mihailov

    2012-02-01

    Full Text Available Because of their small size, passive nature, immunity to electromagnetic interference, and capability to directly measure physical parameters such as temperature and strain, fiber Bragg grating sensors have developed beyond a laboratory curiosity and are becoming a mainstream sensing technology. Recently, high temperature stable gratings based on regeneration techniques and femtosecond infrared laser processing have shown promise for use in extreme environments such as high temperature, pressure or ionizing radiation. Such gratings are ideally suited for energy production applications where there is a requirement for advanced energy system instrumentation and controls that are operable in harsh environments. This paper will present a review of some of the more recent developments.

  16. Spatially Resolved Analysis of Bragg Selectivity

    Directory of Open Access Journals (Sweden)

    Tina Sabel

    2015-11-01

    Full Text Available This paper targets an inherent control of optical shrinkage in photosensitive polymers, contributing by means of spatially resolved analysis of volume holographic phase gratings. Point by point scanning of the local material response to the Gaussian intensity distribution of the recording beams is accomplished. Derived information on the local grating period and grating slant is evaluated by mapping of optical shrinkage in the lateral plane as well as through the depth of the layer. The influence of recording intensity, exposure duration and the material viscosity on the Bragg selectivity is investigated.

  17. Thermal annealing of tilted fiber Bragg gratings

    Science.gov (United States)

    González-Vila, Á.; Rodríguez-Cobo, L.; Mégret, P.; Caucheteur, C.; López-Higuera, J. M.

    2016-05-01

    We report a practical study of the thermal decay of cladding mode resonances in tilted fiber Bragg gratings, establishing an analogy with the "power law" evolution previously observed on uniform gratings. We examine how this process contributes to a great thermal stability, even improving it by means of a second cycle slightly increasing the annealing temperature. In addition, we show an improvement of the grating spectrum after annealing, with respect to the one just after inscription, which suggests the application of this method to be employed to improve saturation issues during the photo-inscription process.

  18. Optical fibre Bragg grating recorded in TOPAS cyclic olefin copolymer

    DEFF Research Database (Denmark)

    Johnson, I.P.; Yuan, Scott Wu; Stefani, Alessio

    2011-01-01

    A report is presented on the inscription of a fibre Bragg grating into a microstructured polymer optical fibre fabricated from TOPAS cyclic olefin copolymer. This material offers two important advantages over poly (methyl methacrylate), which up to now has formed the basis for polymer fibre Bragg...

  19. Experimental and theoretical study of Bragg-Fresnel focalizing optical systems engraved on multi layers interferential mirrors adapted to X and X-UV fields; Etude experimentale et theorique d`optiques focalisantes de type Bragg-Fresnel gravees sur des miroirs interferentiels multicouches adaptes aux domaines X et X-UV

    Energy Technology Data Exchange (ETDEWEB)

    Idir, M.

    1995-02-01

    This work concerns the study of a particular type of X-ray focusing optics known as Bragg-Fresnel lenses, formed through ion-etching of multilayered structures. Using the Super-ACO (LURE/Orsay) synchrotron storage ring, we tested several Bragg-Fresnel lenses having either linear or elliptical geometries (producing a line or a point focus, respectively). Diffraction profiles were first obtained for the linear lenses ion-etched on W/Si multilayers of nano-metric period. The experimental results were compared with our theoretical predictions. We next proposed and tested a solution to the problem superposing the different diffraction orders in the focal plane, that of fabricating Bragg-Fresnel lenses with an off-axis configuration, first for the linear and then the elliptical geometry. An experimental application, for an off-axis elliptical lens produced a focused X-ray spot of 5 x 10 microns{sup 2} for the Super-ACO synchrotron source. The same lens also produced a 1/3-size X-ray image of a grid-like object at 1750 eV using the first and third diffraction orders. (author).

  20. Dimensional crossover in Bragg scattering from an optical lattice

    International Nuclear Information System (INIS)

    Slama, S.; Cube, C. von; Ludewig, A.; Kohler, M.; Zimmermann, C.; Courteille, Ph.W.

    2005-01-01

    We study Bragg scattering at one-dimensional (1D) optical lattices. Cold atoms are confined by the optical dipole force at the antinodes of a standing wave generated inside a laser-driven high-finesse cavity. The atoms arrange themselves into a chain of pancake-shaped layers located at the antinodes of the standing wave. Laser light incident on this chain is partially Bragg reflected. We observe an angular dependence of this Bragg reflection which is different from what is known from crystalline solids. In solids, the scattering layers can be taken to be infinitely spread (three-dimensional limit). This is not generally true for an optical lattice consistent of a 1D linear chain of pointlike scattering sites. By an explicit structure factor calculation, we derive a generalized Bragg condition, which is valid in the intermediate regime. This enables us to determine the aspect ratio of the atomic lattice from the angular dependance of the Bragg scattered light

  1. Low-loss slot waveguides with silicon (111 surfaces realized using anisotropic wet etching

    Directory of Open Access Journals (Sweden)

    Kapil Debnath

    2016-11-01

    Full Text Available We demonstrate low-loss slot waveguides on silicon-on-insulator (SOI platform. Waveguides oriented along the (11-2 direction on the Si (110 plane were first fabricated by a standard e-beam lithography and dry etching process. A TMAH based anisotropic wet etching technique was then used to remove any residual side wall roughness. Using this fabrication technique propagation loss as low as 3.7dB/cm was realized in silicon slot waveguide for wavelengths near 1550nm. We also realized low propagation loss of 1dB/cm for silicon strip waveguides.

  2. Modeling the characteristic etch morphologies along specific crystallographic orientations by anisotropic chemical etching

    Science.gov (United States)

    Li, Kun-Dar; Miao, Jin-Ru

    2018-02-01

    To improve the advanced manufacturing technology for functional materials, a sophisticated control of chemical etching process is highly demanded, especially in the fields of environment and energy related applications. In this study, a phase-field-based model is utilized to investigate the etch morphologies influenced by the crystallographic characters during anisotropic chemical etching. Three types of etching modes are inspected theoretically, including the isotropic, and preferred oriented etchings. Owing to the specific etching behavior along the crystallographic directions, different characteristic surface structures are presented in the simulations, such as the pimple-like, pyramidal hillock and ridge-like morphologies. In addition, the processing parameters affecting the surface morphological formation and evolution are also examined systematically. According to the numerical results, the growth mechanism of surface morphology in a chemical etching is revealed distinctly. While the etching dynamics plays a dominant role on the surface formation, the characteristic surface morphologies corresponding to the preferred etching direction become more apparent. As the atomic diffusion turned into a determinative factor, a smoothened surface would appear, even under the anisotropic etching conditions. These simulation results provide fundamental information to enhance the development and application of anisotropic chemical etching techniques.

  3. Modeling the characteristic etch morphologies along specific crystallographic orientations by anisotropic chemical etching

    Directory of Open Access Journals (Sweden)

    Kun-Dar Li

    2018-02-01

    Full Text Available To improve the advanced manufacturing technology for functional materials, a sophisticated control of chemical etching process is highly demanded, especially in the fields of environment and energy related applications. In this study, a phase-field-based model is utilized to investigate the etch morphologies influenced by the crystallographic characters during anisotropic chemical etching. Three types of etching modes are inspected theoretically, including the isotropic, and preferred oriented etchings. Owing to the specific etching behavior along the crystallographic directions, different characteristic surface structures are presented in the simulations, such as the pimple-like, pyramidal hillock and ridge-like morphologies. In addition, the processing parameters affecting the surface morphological formation and evolution are also examined systematically. According to the numerical results, the growth mechanism of surface morphology in a chemical etching is revealed distinctly. While the etching dynamics plays a dominant role on the surface formation, the characteristic surface morphologies corresponding to the preferred etching direction become more apparent. As the atomic diffusion turned into a determinative factor, a smoothened surface would appear, even under the anisotropic etching conditions. These simulation results provide fundamental information to enhance the development and application of anisotropic chemical etching techniques.

  4. Etching Behavior of Aluminum Alloy Extrusions

    Science.gov (United States)

    Zhu, Hanliang

    2014-11-01

    The etching treatment is an important process step in influencing the surface quality of anodized aluminum alloy extrusions. The aim of etching is to produce a homogeneously matte surface. However, in the etching process, further surface imperfections can be generated on the extrusion surface due to uneven materials loss from different microstructural components. These surface imperfections formed prior to anodizing can significantly influence the surface quality of the final anodized extrusion products. In this article, various factors that influence the materials loss during alkaline etching of aluminum alloy extrusions are investigated. The influencing variables considered include etching process parameters, Fe-rich particles, Mg-Si precipitates, and extrusion profiles. This study provides a basis for improving the surface quality in industrial extrusion products by optimizing various process parameters.

  5. Obtaining porous silicon suitable for sensor technology using MacEtch nonelectrolytic etching

    Directory of Open Access Journals (Sweden)

    Iatsunskyi I. R.

    2013-12-01

    Full Text Available The author suggests to use the etching method MacEtch (metal-assisted chemical etching for production of micro- and nanostructures of porous silicon. The paper presents research results on the morphology structures obtained at different parameters of deposition and etching processes. The research has shown that, depending on the parameters of deposition of silver particles and silicon wafers etching, the obtained surface morphology may be different. There may be both individual crater-like pores and developed porous or macroporous surface. These results indicate that the MacEtch etching is a promising method for obtaining micro-porous silicon nanostructures suitable for effective use in gas sensors and biological object sensors.

  6. Carrier-lifetime-controlled selective etching process for semiconductors using photochemical etching

    International Nuclear Information System (INIS)

    Ashby, C.I.H.; Myers, D.R.

    1992-01-01

    This patent describes a process for selectively photochemically etching a semiconductor material. It comprises introducing at least one impurity into at least one selected region of a semiconductor material to be etched to increase a local impurity concentration in the at least one selected region relative to an impurity concentration in regions of the semiconductor material adjacent thereto, for reducing minority carrier lifetimes within the at least one selected region relative to the adjacent regions for thereby providing a photochemical etch-inhibiting mask at the at least one selected region; and etching the semiconductor material by subjecting the surface of the semiconductor material to a carrier-driven photochemical etching reaction for selectively etching the regions of the semiconductor material adjacent the at least one selected region having the increase impurity concentration; wherein the step of introducing at least one impurity is performed so as not to produce damage to the at least one selected region before any etching is performed

  7. Silicon germanium as a novel mask for silicon deep reactive ion etching

    KAUST Repository

    Serry, Mohamed Y.

    2013-10-01

    This paper reports on the use of p-type polycrystalline silicon germanium (poly-Si1-xGex) thin films as a new masking material for the cryogenic deep reactive ion etching (DRIE) of silicon. We investigated the etching behavior of various poly-Si1-xGex:B (0Etching selectivity for silicon, silicon oxide, and photoresist was determined at different etching temperatures, ICP and RF powers, and SF6 to O2 ratios. The study demonstrates that the etching selectivity of the SiGe mask for silicon depends strongly on three factors: Ge content; boron concentration; and etching temperature. Compared to conventional SiO2 and SiN masks, the proposed SiGe masking material exhibited several advantages, including high etching selectivity to silicon (>1:800). Furthermore, the SiGe mask was etched in SF6/O2 plasma at temperatures ≥ - 80°C and at rates exceeding 8 μm/min (i.e., more than 37 times faster than SiO2 or SiN masks). Because of the chemical and thermodynamic stability of the SiGe film as well as the electronic properties of the mask, it was possible to deposit the proposed film at CMOS backend compatible temperatures. The paper also confirms that the mask can easily be dry-removed after the process with high etching-rate by controlling the ICP and RF power and the SF6 to O2 ratios, and without affecting the underlying silicon substrate. Using low ICP and RF power, elevated temperatures (i.e., > - 80°C), and an adjusted O2:SF6 ratio (i.e., ~6%), we were able to etch away the SiGe mask without adversely affecting the final profile. Ultimately, we were able to develop deep silicon- trenches with high aspect ratio etching straight profiles. © 1992-2012 IEEE.

  8. Effects of the Addictives on Etching Characteristics of Aluminum Foil

    Energy Technology Data Exchange (ETDEWEB)

    Kim, S.K.; Jang, J.M.; Chi, C.S. [Kookmin University, Seoul (Korea); Shin, D.C. [Sungnam Polytechnic, Sungnam (Korea); Lee, J.H.; Oh, H.J. [Hanseo University, Seosan (Korea)

    2001-01-01

    The effects of additives in the HCI etching solution on etching behaviors of aluminium foil as dielectric film for electrolytic capacitors were investigated. The etch pits formed in 1M hydrochloric acid containing ethylene glycol as an additive contain more fine and homogeneous etch tunnels compared to thoese in 1 M hydrochloric acid only, which led to the increase in the effective internal surface area of aluminum foil. After anodizing of aluminum foil etched in etching solutions, the LCR meter results have shown that the capacitance of dielectric film etched in hydrochloric acid with ethylene glycol was increased remarkably compared to that etched in hydrochloric acid only. (author). 21 refs., 10 figs.

  9. Sputter etching of polymer fibres

    International Nuclear Information System (INIS)

    Carter, G.; Hill, A.E.; Nobes, M.J.; Jeffries, R.; Simmens, S.C.

    1979-01-01

    Fibres of polyamide, polyester and an aromatic polyamide (Kevlar) have been subjected to Ar + ion bombardment erosion in an ion accelerator or an rf discharge system. In the case of the former two polymers, cones are observed to develop upon the fibre surface and these are associated with etch protection resulting from the presence of particles of titanium dioxide pigment. This effect is absent in the third, unpigmented, fibre. In all cases ripple structures with a habit transverse to the fibre axes and of wavelength of approximately 1000 Angstrom are gradually developed during ion bombardment. It is suggested that this morphology results from an underlying periodicity of the fibre structure either inherent in the fibre structure or induced by the irradiation. (author)

  10. Inductively coupled plasma etching of GaAs low loss waveguides for a traveling waveguide polarization converter, using chlorine chemistry

    Science.gov (United States)

    Lu, J.; Meng, X.; Springthorpe, A. J.; Shepherd, F. R.; Poirier, M.

    2004-05-01

    A traveling waveguide polarization converter [M. Poirier et al.] has been developed, which involves long, low loss, weakly confined waveguides etched in GaAs (epitaxially grown by molecular beam epitaxy), with electroplated ``T electrodes'' distributed along the etched floor adjacent to the ridge walls, and airbridge interconnect metallization. This article describes the development of the waveguide fabrication, based on inductively coupled plasma (ICP) etching of GaAs using Cl2 chemistry; the special processes required to fabricate the electrodes and metallization [X. Meng et al.], and the device characteristics [M. Poirier et al.], are described elsewhere. The required waveguide has dimensions nominally 4 μm wide and 2.1 μm deep, with dimensional tolerances ~0.1 μm across the wafer and wafer to wafer. A vertical etch profile with very smooth sidewalls and floors is required to enable the plated metal electrodes to be fabricated within 0.1 μm of the ridge. The ridges were fabricated using Cl2 ICP etching and a photoresist mask patterned with an I-line stepper; He backside cooling, combined with an electrostatic chuck, was employed to ensure good heat transfer to prevent resist reticulation. The experimental results showed that the ridge profile is very sensitive to ICP power and platen rf power. High ICP power and low platen power tend to result in more isotropic etching, whereas increasing platen power increases the photoresist etch rate, which causes rougher ridge sidewalls. No strong dependence of GaAs etch rate and ridge profile were observed with small changes in process temperature (chuck temperature). However, when the chuck temperature was decreased from 25 to 0 °C, etch uniformity across a 3 in. wafer improved from 6% to 3%. Photoresist and polymer residues present after the ICP etch were removed using a combination of wet and dry processes. .

  11. Inductively coupled plasma etching of GaAs low loss waveguides for a traveling waveguide polarization converter, using chlorine chemistry

    International Nuclear Information System (INIS)

    Lu, J.; Meng, X.; SpringThorpe, A.J.; Shepherd, F.R.; Poirier, M.

    2004-01-01

    A traveling waveguide polarization converter [M. Poirier et al.] has been developed, which involves long, low loss, weakly confined waveguides etched in GaAs (epitaxially grown by molecular beam epitaxy), with electroplated 'T electrodes' distributed along the etched floor adjacent to the ridge walls, and airbridge interconnect metallization. This article describes the development of the waveguide fabrication, based on inductively coupled plasma (ICP) etching of GaAs using Cl 2 chemistry; the special processes required to fabricate the electrodes and metallization [X. Meng et al.], and the device characteristics [M. Poirier et al.], are described elsewhere. The required waveguide has dimensions nominally 4 μm wide and 2.1 μm deep, with dimensional tolerances ∼0.1 μm across the wafer and wafer to wafer. A vertical etch profile with very smooth sidewalls and floors is required to enable the plated metal electrodes to be fabricated within 0.1 μm of the ridge. The ridges were fabricated using Cl 2 ICP etching and a photoresist mask patterned with an I-line stepper; He backside cooling, combined with an electrostatic chuck, was employed to ensure good heat transfer to prevent resist reticulation. The experimental results showed that the ridge profile is very sensitive to ICP power and platen rf power. High ICP power and low platen power tend to result in more isotropic etching, whereas increasing platen power increases the photoresist etch rate, which causes rougher ridge sidewalls. No strong dependence of GaAs etch rate and ridge profile were observed with small changes in process temperature (chuck temperature). However, when the chuck temperature was decreased from 25 to 0 deg. C, etch uniformity across a 3 in. wafer improved from 6% to 3%. Photoresist and polymer residues present after the ICP etch were removed using a combination of wet and dry processes

  12. Optical Fiber Thermometer Based on Fiber Bragg Gratings

    Science.gov (United States)

    Rosli, Ekbal Bin; Mohd. Noor, Uzer

    2018-03-01

    Fiber Bragg grating has generated much interest in use as sensors to measure strain, temperature, and other physical parameters. It also the most common component used to develop this sensor with the advantages of simple, intrinsic sensing elements, electrically passive operation, EMI immunity, high sensitivity, compact size and potentially low cost [6]. This paper reports the design of an optical fiber thermometer based on fiber Bragg gratings. The system was developed for detecting temperature and strain by monitoring the shift of Bragg wavelength. The shifting of Bragg wavelength is used to indicate the temperature and strain due to the change in the surrounding temperature and strain. When the temperature and strain reach the exact wavelength level of the system, the temperature and strain value will display on the Arduino liquid crystal display (LCD). The optical fiber will provide the broadband light source and after passing the FBG the Bragg wavelength into the optical spectrum analyzer (OSA). The system is based on FBG as a physical quantity sensor. The temperatures measured is taken from the water bath and that of the strain is provided by amount of slotted mass used. The outcome of this project is to characterize the Bragg wavelength shifting from the fiber Bragg grating output. As the conclusion, this project provides an efficient optical fiber thermometer in measuring temperature and strain in order to replace the use of conventional electrical instruments.

  13. Frequency shift of the Bragg and Non-Bragg backscattering from periodic water wave

    Science.gov (United States)

    Wen, Biyang; Li, Ke

    2016-08-01

    Doppler effect is used to measure the relative speed of a moving target with respect to the radar, and is also used to interpret the frequency shift of the backscattering from the ocean wave according to the water-wave phase velocity. The widely known relationship between the Doppler shift and the water-wave phase velocity was deduced from the scattering measurements data collected from actual sea surface, and has not been verified under man-made conditions. Here we show that this ob- served frequency shift of the scattering data from the Bragg and Non-Bragg water wave is not the Doppler shift corresponding to the water-wave phase velocity as commonly believed, but is the water-wave frequency and its integral multiple frequency. The power spectrum of the backscatter from the periodic water wave consists of serials discrete peaks, which is equally spaced by water wave frequency. Only when the water-wave length is the integer multiples of the Bragg wave, and the radar range resolution is infinite, does the frequency shift of the backscattering mathematically equal the Doppler shift according to the water-wave phase velocity.

  14. Etch Defect Characterization and Reduction in Hard-Mask-Based Al Interconnect Etching

    International Nuclear Information System (INIS)

    Lee, H.J.; Hung, C.L.; Leng, C.H.; Lian, N.T.; Young, L.W.

    2009-01-01

    This paper identifies the defect adders, for example, post hard-mask etch residue, post metal etch residue, and blocked etch metal island and investigates the removal characteristics of these defects within the oxide-masked Al etching process sequence. Post hard-mask etch residue containing C atom is related to the hardening of photoresist after the conventional post-RIE ashing at 275 degree C. An in situ O 2 -based plasma ashing on RIE etcher was developed to prevent the photoresist hardening from the high-ashing temperature; followed wet stripping could successfully eliminate such hardened polymeric residue. Post metal etch residue was caused from the attack of the Al sidewall by Cl atoms, and too much CHF 3 addition in the Al main etch step passivated the surface of Al resulting in poor capability to remove the Al-containing residue. The lower addition of CHF 3 in the Al main etch step would benefit from the residue removal. One possibility of blocked etch metal island creating was due to the micro masking formed on the opening of Ti N during the hard-mask patterning. We report that an additional Ti N surface pretreatment with the Ar/CHF 3 /N 2 plasmas could reduce the impact of the micro masking residues on blocked metal etch.

  15. Bragg projection ptychography on niobium phase domains

    Science.gov (United States)

    Burdet, Nicolas; Shi, Xiaowen; Clark, Jesse N.; Huang, Xiaojing; Harder, Ross; Robinson, Ian

    2017-07-01

    Bragg projection ptychography (BPP) is a coherent x-ray diffraction imaging technique which combines the strengths of scanning microscopy with the phase contrast of x-ray ptychography. Here we apply it for high resolution imaging of the phase-shifted crystalline domains associated with epitaxial growth. The advantages of BPP are that the spatial extent of the sample is arbitrary, it is nondestructive, and it gives potentially diffraction limited spatial resolution. Here we demonstrate the application of BPP for revealing the domain structure caused by epitaxial misfit in a nanostructured metallic thin film. Experimental coherent diffraction data were collected from a niobium thin film, epitaxially grown on a sapphire substrate as the beam was scanned across the sample. The data were analyzed by BPP using a carefully selected combination of refinement procedures. The resulting image shows a close packed array of epitaxial domains, shifted with respect to each other due to misfit between the film and its substrate.

  16. Theory of Fiber Optical Bragg Grating: Revisited

    Science.gov (United States)

    Tai, H.

    2003-01-01

    The reflected signature of an optical fiber Bragg grating is analyzed using the transfer function method. This approach is capable to cast all relevant quantities into proper places and provides a better physical understanding. The relationship between reflected signal, number of periods, index of refraction, and reflected wave phase is elucidated. The condition for which the maximum reflectivity is achieved is fully examined. We also have derived an expression to predict the reflectivity minima accurately when the reflected wave is detuned. Furthermore, using the segmented potential approach, this model can handle arbitrary index of refraction profiles and compare the strength of optical reflectivity of different profiles. The condition of a non-uniform grating is also addressed.

  17. X-ray diffraction at Bragg angles around π/2

    International Nuclear Information System (INIS)

    Mayolo, C.M.G. de.

    1991-01-01

    X-ray diffraction at Bragg angles around π/2 is studied from the theoretical and experimental points of view. The proposed corrections to the dynamical theory in the θ β ≅ π/2 cases, has been reviewed showing the equivalence between two formalisms leading to a corrected expression for the dependence of the angular parameter y with the angle of incidence. An expression for y valid in the conventional and θ β ≅ π/2 cases has been obtained. A general expression for Bragg law and for energy resolution after a Bragg diffraction was also deduced. (author)

  18. Etching patterns on the micro‐ and nanoscale

    DEFF Research Database (Denmark)

    Michael-Lindhard, Jonas; Herstrøm, Berit; Stöhr, Frederik

    2014-01-01

    ‐ray beam down to a spot size of some 100 nm, the sidewalls of the cavities etched down to 300 μm into a silicon wafer must be perfectly straight and normal to the surface and have minimum roughness.The range of possible applications of the silicon etches is greatly extended if combined with electroplating...... and polymer injection molding. High precision patterns of, for instance microfluidic devices, are etched intosilicon which is then electroplated with nickel that will serve as a stamp in the polymer injection molding tool where thousands of devices may be replicated. In addition to silicon and its derived...

  19. Nanostructuring of Mo/Si multilayers by means of reactive ion etching using a three-level mask

    International Nuclear Information System (INIS)

    Dreeskornfeld, L.; Haindl, G.; Kleineberg, U.; Heinzmann, U.; Shi, F.; Volland, B.; Rangelow, I.W.; Majkova, E.; Luby, S.; Kostic,; Matay, L.; Hrkut, P.; Hudek, P.; Lee, H.-Y.

    2004-01-01

    Recently, Mo/Si multilayer reflectors have been gaining industry interest as a promising choice for the next generation extreme ultraviolet mask material for printing sub 70 nm feature size devices. A reactive ion etching system with optimized hardware using CHF 3 /Ar process regime shows the capability for highly anisotropic etching of sub congruent with 400 nm feature sizes in Mo/Si test multilayers with ten periods and a bilayer thickness of 7.8 nm which were prepared by e-beam evaporation. A three-level-mask technique consisting of a top resist mask layer poly-methyl-meth-acrylate, a middle hard amorphous Si mask layer and a bottom-level polyimide layer is used to create the etch mask. The etch characteristics of the polyimide film is shown to be one of the major factors determining the success of the described multilayer etching process. The developed etching technology demonstrates superior process performance without facets, excellent uniformity and good profile control. No contamination, degeneration or defect generation in the unetched multilayer structure could be detected. This non-conventional process results in minimum deposition during the etching thus eliminating the need for a dry or wet cleaning. Sidewall angles in Mo/Si multilayers of 85 deg. , without undercut, bowing and ripples resulting in smooth sidewalls are achieved

  20. Dry socket

    Science.gov (United States)

    Alveolar osteitis; Alveolitis; Septic socket ... You may be more at risk for dry socket if you: Have poor oral health Have a ... after having a tooth pulled Have had dry socket in the past Drink from a straw after ...

  1. Precise in situ etch depth control of multilayered III−V semiconductor samples with reflectance anisotropy spectroscopy (RAS equipment

    Directory of Open Access Journals (Sweden)

    Ann-Kathrin Kleinschmidt

    2016-11-01

    Full Text Available Reflectance anisotropy spectroscopy (RAS equipment is applied to monitor dry-etch processes (here specifically reactive ion etching (RIE of monocrystalline multilayered III–V semiconductors in situ. The related accuracy of etch depth control is better than 16 nm. Comparison with results of secondary ion mass spectrometry (SIMS reveals a deviation of only about 4 nm in optimal cases. To illustrate the applicability of the reported method in every day settings for the first time the highly etch depth sensitive lithographic process to form a film lens on the waveguide ridge of a broad area laser (BAL is presented. This example elucidates the benefits of the method in semiconductor device fabrication and also suggests how to fulfill design requirements for the sample in order to make RAS control possible.

  2. Transport through track etched polymeric blend membrane

    Indian Academy of Sciences (India)

    Unknown

    Department of Physics, University of Rajasthan, Jaipur 302 004, India. MS received 10 June 2005 ... Both the track and bulk etching takes place in the irradiated membrane. ... using rotating flywheel attachment, the details having been given ...

  3. Semiconductor structure and recess formation etch technique

    Energy Technology Data Exchange (ETDEWEB)

    Lu, Bin; Sun, Min; Palacios, Tomas Apostol

    2017-02-14

    A semiconductor structure has a first layer that includes a first semiconductor material and a second layer that includes a second semiconductor material. The first semiconductor material is selectively etchable over the second semiconductor material using a first etching process. The first layer is disposed over the second layer. A recess is disposed at least in the first layer. Also described is a method of forming a semiconductor structure that includes a recess. The method includes etching a region in a first layer using a first etching process. The first layer includes a first semiconductor material. The first etching process stops at a second layer beneath the first layer. The second layer includes a second semiconductor material.

  4. Directional Etching of Silicon by Silver Nanostructures

    Science.gov (United States)

    Sharma, Pradeep; Wang, Yuh-Lin

    2011-02-01

    We report directional etching of nanostructures (nanochannels and nanotrenches) into the Si(100) substrates in aqueous HF and H2O2 solution by lithographically defined Ag patterns (nanoparticles, nanorods, and nanorings). The Effect of Ag/Si interface oxide on the directional etching has been studied by etching Ag/SiOx/Si samples of known interface oxide thickness. Based on high resolution transmission electron microscopy (HRTEM) imaging and TEM-energy dispersive X-ray (EDX) spectra of the Ag/Si interfaces, we propose that maintenance of the sub-nanometer oxide at the Ag/Si interfaces and Ag-Si interaction are the key factors which regulate the directional etching of Si.

  5. Bragg-Fresnel optics: New field of applications

    Energy Technology Data Exchange (ETDEWEB)

    Snigirev, A. [ESRF, Grenoble (France)

    1997-02-01

    Bragg-Fresnel Optics shows excellent compatibility with the third generation synchrotron radiation sources such as ESRF and is capable of obtaining monochromatic submicron focal spots with 10{sup 8}-10{sup 9} photons/sec in an energy bandwidth of 10{sup -4}-10{sup -6} and in a photon energy range between 2-100 keV. New types of Bragg-Fresnel lenses like modified, ion implanted, bent and acoustically modulated were tested. Microprobe techniques like microdiffraction and microfluorescence based on Bragg-Fresnel optics were realised at the ESRF beamlines. Excellent parameters of the X-ray beam at the ESRF in terms of low emittance and quite small angular source size allow for Bragg-Fresnel optics to occupy new fields of applications such as high resolution diffraction, holography, interferometry and phase contrast imaging.

  6. Distributed Bragg grating frequency control in metallic nano lasers

    NARCIS (Netherlands)

    Marell, M.J.H.; Hill, M.T.

    2010-01-01

    We show that Bragg gratings can be readily incorporated into metallic nano-lasers which exploit waveguides with semiconductor cores, via modulation of the waveguide width. This provides a simple way to implement laser wavelength control.

  7. In vivo effect of a self-etching primer on dentin.

    Science.gov (United States)

    Milia, E; Lallai, M R; García-Godoy, F

    1999-08-01

    To determine the ultrastructural aspects of the dentin collagen area in the cavity preparation floor produced in vivo after phosphoric acid acid-etching or after using Clearfil Liner Bond 2 self-etching primer (LB2 Primer). Twenty-four non-carious third molars scheduled for extraction from young adult patients (16-30 years old) were used. Conventional Class I cavities (+/- 2 mm deep) were prepared on the occlusal surfaces of all teeth using a cylindrical diamond bur on a high-speed handpiece with copious water spray. To avoid dehydration of the dentin, the smear layer-covered dentin was briefly air-dried for 2 seconds. Cavities were assigned at random to the following groups: Group A: Dentin etched for 15 seconds with 34% phosphoric acid, rinsed for 20 seconds and then briefly air-dried for 2 seconds with oil-free compressed air leaving the surfaces slightly moist. Group B: LB2 Primer was applied to the cavity surfaces for 30 seconds and then briefly air-dried to remove the solvent. Group C: The untreated dentin smear layer was used as a control. In all three groups, the cavities were filled incrementally with a resin-based composite (APX), light curing every increment for 40 seconds. After 30 minutes, the teeth were extracted atraumatically and the samples immediately prepared for evaluation with the transmission electron microscope. The use of a self-etching primer did not produce significant morphological changes in the moist dentin substrate. Adverse morphological conditions where observed when there was an excess water on the dentin surface. Phosphoric acid altered the collagen more severely than the self-etching primer.

  8. Etching characteristics of a CR-39 track detector at room temperature in different etching solutions

    International Nuclear Information System (INIS)

    Dajko, G.

    1991-01-01

    Investigations were carried out to discover how the etching characteristics of CR-39 detectors change with varying conditions of the etching process. Measurements were made at room temperature in pure NaOH and KOH solutions; in different alcoholic KOH solutions (PEW solution, i.e. potassium hydroxide, ethyl alcohol, water); and in NaOH and KOH solutions containing different additives. The bulk etching rate of the detector (V B ) and the V (= V T /V B ) function, i.e. track to bulk etch rates ratio, for 6.1 MeV α-particles, were measured systematically. (author)

  9. Self-etching adhesive on intact enamel, with and without pre-etching.

    Science.gov (United States)

    Devarasa, G M; Subba Reddy, V V; Chaitra, N L; Swarna, Y M

    2012-05-01

    Bond strengths of composite resin to enamel using self-etch adhesive (SEA) Clearfil SE bond system on intact enamel and enamel pre-etched with phosphoric acid were compared. The objective was to determine if the pre-etching would increase the bond strengths of the SEA systems to intact enamel and to evaluate the effect of pre-etching on bond formation of self-etch adhesives on intact enamel. Labial surfaces of 40 caries free permanent upper central and lateral incisors were cleaned, sectioned of their roots. All specimens were mounted on acrylic block and divided randomly into four groups. In two groups the application of self-etch adhesive, Clearfil SE bond was carried as per manufacturer's instructions, composite cylinders were built, whereas in the other two groups, 37% phosphoric acid etching was done before the application of self-etching adhesives. Then the resin tags were analyzed using scanning electron microscope and shear bond strength was measured using Instron universal testing machine. When phosphoric acid was used, there was significant increase in the depth of penetration of resin tags and in the Shear Bond Strength of composite to enamel. The results indicate that out of both treatment groups, pre-etching the intact enamel with 37% phosphoric acid resulted in formation of longer resin tags and higher depth of penetration of resin tags of the Clearfil SE bond, and attaining higher bond strength of the Clearfil SE bond to intact enamel. Copyright © 2011 Wiley Periodicals, Inc.

  10. Shear bond strength of self-etch adhesives to enamel with additional phosphoric acid etching.

    Science.gov (United States)

    Lührs, Anne-Katrin; Guhr, Silke; Schilke, Reinhard; Borchers, Lothar; Geurtsen, Werner; Günay, Hüsamettin

    2008-01-01

    This study evaluated the shear bond strength of self-etch adhesives to enamel and the effect of additional phosphoric acid etching. Seventy sound human molars were randomly divided into three test groups and one control group. The enamel surfaces of the control group (n=10) were treated with Syntac Classic (SC). Each test group was subdivided into two groups (each n=10). In half of each test group, ground enamel surfaces were coated with the self-etch adhesives AdheSe (ADH), Xeno III (XE) or Futurabond NR (FNR). In the remaining half of each test group, an additional phosphoric acid etching of the enamel surface was performed prior to applying the adhesives. The shear bond strength was measured with a universal testing machine at a crosshead speed of 1 mm/minute after storing the samples in distilled water at 37 degrees C for 24 hours. Fracture modes were determined by SEM examination. For statistical analysis, one-way ANOVA and the two-sided Dunnett Test were used (p>0.05). Additional phosphoric etching significantly increased the shear bond strength of all the examined self-etch adhesives (padhesive fractures. For all the self-etch adhesives, a slight increase in mixed fractures occurred after conditioning with phosphoric acid. An additional phosphoric acid etching of enamel should be considered when using self-etch adhesives. More clinical studies are needed to evaluate the long-term success of the examined adhesives.

  11. Simultaneous measurement of magnetic field and temperature based on an etched TCFMI cascaded with an FBG

    Science.gov (United States)

    Yan, Guofeng; Zhang, Liang; He, Sailing

    2016-04-01

    In this paper, a dual-parameter measurement scheme based on an etched thin core fiber modal interferometer (TCMI) cascaded with a fiber Bragg grating (FBG) is proposed and experimentally demonstrated for simultaneous measurement of magnetic field and temperature. The magnetic field and temperature responses of the packaged TCFMI were first investigated, which showed that the magnetic field sensitivity could be highly enhanced by decreasing of the TCF diameter and the temperature-cross sensitivities were up to 3-7 Oe/°C at 1550 nm. Then, the theoretical analysis and experimental demonstration of the proposed dual-parameter sensing scheme were conducted. Experimental results show that, the reflection of the FBG has a magnetic field intensity and temperature sensitivities of -0.017 dB/Oe and 0.133 dB/°C, respectively, while the Bragg wavelength of the FBG is insensitive to magnetic field and has a temperature sensitivity of 13.23 pm/°C. Thus by using the sensing matrix method, the intensity of the magnetic field and the temperature variance can be measured, which enables magnetic field sensing under strict temperature environments. In the on-off time response test, the fabricated sensor exhibited high repeatability and short response time of ∼19.4 s. Meanwhile the reflective sensing probe type is more compact and practical for applications in hard-to-reach conditions.

  12. A volatile-solvent gas fiber sensor based on polyaniline film coated on superstructure fiber Bragg gratings

    International Nuclear Information System (INIS)

    Ai, L; Chen, T C; Su, W K; Mau, J C; Liu, W F

    2008-01-01

    A fiber sensor based on a polyaniline (PANI) film that is coated on the surface of an etched superstructure fiber grating to detect volatile solvent vapors is experimentally demonstrated. This sensing mechanism is based on the interaction of the testing gas with the polyaniline coating film, which changes the film index, resulting in a shift in the Bragg wavelength. The sensitivity of this sensor to ammonia (NH 3 ) gas is about 0.073 pm ppm −1 , which depends on the optical characteristics of the fiber grating, the diameter of the fiber cladding and the constituents of the sensing film. Methanol concentrations can also be measured using this sensing scheme. The sensitivity of this sensor must be improved to provide a simple, reliable, repeatable and non-destructive method for sensing various chemical gases. (technical design note)

  13. Plasma/Neutral-Beam Etching Apparatus

    Science.gov (United States)

    Langer, William; Cohen, Samuel; Cuthbertson, John; Manos, Dennis; Motley, Robert

    1989-01-01

    Energies of neutral particles controllable. Apparatus developed to produce intense beams of reactant atoms for simulating low-Earth-orbit oxygen erosion, for studying beam-gas collisions, and for etching semiconductor substrates. Neutral beam formed by neutralization and reflection of accelerated plasma on metal plate. Plasma ejected from coaxial plasma gun toward neutralizing plate, where turned into beam of atoms or molecules and aimed at substrate to be etched.

  14. Zeonex Microstructured Polymer Optical Fibre Bragg Grating Sensor

    DEFF Research Database (Denmark)

    Woyessa, Getinet; Fasano, Andrea; Markos, Christos

    2016-01-01

    We fabricated an endlessly single mode and humidity insensitive Zeonex microstructured polymer optical fibre (mPOF) for fibre Bragg grating (FBG) temperature and strain sensors. We inscribed and characterise FBGs in Zeonex mPOF for the first time.......We fabricated an endlessly single mode and humidity insensitive Zeonex microstructured polymer optical fibre (mPOF) for fibre Bragg grating (FBG) temperature and strain sensors. We inscribed and characterise FBGs in Zeonex mPOF for the first time....

  15. Plasma etching: Yesterday, today, and tomorrow

    Energy Technology Data Exchange (ETDEWEB)

    Donnelly, Vincent M.; Kornblit, Avinoam [Department of Chemical and Biomolecular Engineering, University of Houston, Houston, Texas 77204 (United States)

    2013-09-15

    The field of plasma etching is reviewed. Plasma etching, a revolutionary extension of the technique of physical sputtering, was introduced to integrated circuit manufacturing as early as the mid 1960s and more widely in the early 1970s, in an effort to reduce liquid waste disposal in manufacturing and achieve selectivities that were difficult to obtain with wet chemistry. Quickly, the ability to anisotropically etch silicon, aluminum, and silicon dioxide in plasmas became the breakthrough that allowed the features in integrated circuits to continue to shrink over the next 40 years. Some of this early history is reviewed, and a discussion of the evolution in plasma reactor design is included. Some basic principles related to plasma etching such as evaporation rates and Langmuir–Hinshelwood adsorption are introduced. Etching mechanisms of selected materials, silicon, silicon dioxide, and low dielectric-constant materials are discussed in detail. A detailed treatment is presented of applications in current silicon integrated circuit fabrication. Finally, some predictions are offered for future needs and advances in plasma etching for silicon and nonsilicon-based devices.

  16. Plasma etching: Yesterday, today, and tomorrow

    International Nuclear Information System (INIS)

    Donnelly, Vincent M.; Kornblit, Avinoam

    2013-01-01

    The field of plasma etching is reviewed. Plasma etching, a revolutionary extension of the technique of physical sputtering, was introduced to integrated circuit manufacturing as early as the mid 1960s and more widely in the early 1970s, in an effort to reduce liquid waste disposal in manufacturing and achieve selectivities that were difficult to obtain with wet chemistry. Quickly, the ability to anisotropically etch silicon, aluminum, and silicon dioxide in plasmas became the breakthrough that allowed the features in integrated circuits to continue to shrink over the next 40 years. Some of this early history is reviewed, and a discussion of the evolution in plasma reactor design is included. Some basic principles related to plasma etching such as evaporation rates and Langmuir–Hinshelwood adsorption are introduced. Etching mechanisms of selected materials, silicon, silicon dioxide, and low dielectric-constant materials are discussed in detail. A detailed treatment is presented of applications in current silicon integrated circuit fabrication. Finally, some predictions are offered for future needs and advances in plasma etching for silicon and nonsilicon-based devices

  17. Birefringence Bragg Binary (3B) grating, quasi-Bragg grating and immersion gratings

    Science.gov (United States)

    Ebizuka, Noboru; Morita, Shin-ya; Yamagata, Yutaka; Sasaki, Minoru; Bianco, Andorea; Tanabe, Ayano; Hashimoto, Nobuyuki; Hirahara, Yasuhiro; Aoki, Wako

    2014-07-01

    A volume phase holographic (VPH) grating achieves high angular dispersion and very high diffraction efficiency for the first diffraction order and for S or P polarization. However the VPH grating could not achieve high diffraction efficiency for non-polarized light at a large diffraction angle because properties of diffraction efficiencies for S and P polarizations are different. Furthermore diffraction efficiency of the VPH grating extinguishes toward a higher diffraction order. A birefringence binary Bragg (3B) grating is a thick transmission grating with optically anisotropic material such as lithium niobate or liquid crystal. The 3B grating achieves diffraction efficiency up to 100% for non-polarized light by tuning of refractive indices for S and P polarizations, even in higher diffraction orders. We fabricated 3B grating with liquid crystal and evaluated the performance of the liquid crystal grating. A quasi-Bragg (QB) grating, which consists long rectangle mirrors aligned in parallel precisely such as a window shade, also achieves high diffraction efficiency toward higher orders. We fabricated QB grating by laminating of silica glass substrates and glued by pressure fusion of gold films. A quasi-Bragg immersion (QBI) grating has smooth mirror hypotenuse and reflector array inside the hypotenuse, instead of step-like grooves of a conventional immersion grating. An incident beam of the QBI grating reflects obliquely at a reflector, then reflects vertically at the mirror surface and reflects again at the same reflector. We are going to fabricate QBI gratings by laminating of mirror plates as similar to fabrication of the QB grating. We will also fabricate silicon and germanium immersion gratings with conventional step-like grooves by means of the latest diamond machining methods. We introduce characteristics and performance of these gratings.

  18. Optical Effects Accompanying the Dynamical Bragg Diffraction in Linear 1D Photonic Crystals Based on Porous Silicon

    Directory of Open Access Journals (Sweden)

    Anton Maydykovskiy

    2014-10-01

    Full Text Available We survey our recent results on the observation and studies of the effects accompanying the dynamical Bragg diffraction in one-dimensional photonic crystals (PhC. Contrary to the kinematic Bragg diffraction, the dynamical one considers a continuous interaction between the waves travelling within a spatially-periodic structure and is the most pronounced in the so called Laue geometry, leading to a number of exciting phenomena. In the described experiments, we study the PhC based on porous silicon or porous quartz, made by the electrochemical etching of crystalline silicon with the consequent thermal annealing. Importantly, these PhC are approximately hundreds of microns thick and contain a few hundreds of periods, so that the experiments in the Laue diffraction scheme are available. We discuss the effect of the temporal splitting of femtosecond laser pulses and show that the effect is quite sensitive to the polarization and the phase of a femtosecond laser pulse. We also show the experimental realization of the Pendular effect in porous quartz PhC and demonstrate the experimental conditions for the total spatial switching of the output radiation between the transmitted and diffracted directions. All described effects are of high interest for the control over the light propagation based on PhC structures.

  19. III-Nitride Blue Laser Diode with Photoelectrochemically Etched Current Aperture

    Science.gov (United States)

    Megalini, Ludovico

    Group III-nitride is a remarkable material system to make highly efficient and high-power optoelectronics and electronic devices because of the unique electrical, physical, chemical and structural properties it offers. In particular, InGaN-based blue Laser Diodes (LDs) have been successfully employed in a variety of applications ranging from biomedical and military devices to scientific instrumentation and consumer electronics. Recently their use in highly efficient Solid State Lighting (SSL) has been proposed because of their superior beam quality and higher efficiency at high input power density. Tremendous advances in research of GaN semi-polar and non-polar crystallographic planes have led both LEDs and LDs grown on these non-basal planes to rival with, and with the promise to outperform, their equivalent c-plane counterparts. However, still many issues need to be addressed, both related to material growth and device fabrication, including a lack of conventional wet etching techniques. GaN and its alloys with InN and AlN have proven resistant essentially to all known standard wet etching techniques, and the predominant etching methods rely on chlorine-based dry etching (RIE). These introduce sub-surface damage which can degrade the electrical properties of the epitaxial structure and reduce the reliability and lifetime of the final device. Such reasons and the limited effectiveness of passivation techniques have so far suggested to etch the LD ridges before the active region, although it is well-known that this can badly affect the device performance, especially in narrow stripe width LDs, because the gain guiding obtained in the planar configuration is weak and the low index step and high lateral current leakage result in devices with threshold current density higher than devices whose ridge is etched beyond the active region. Moreover, undercut etching of III-nitride layers has proven even more challenging, with limitations in control of the lateral etch

  20. Multipoint sensor based on fiber Bragg gratings

    International Nuclear Information System (INIS)

    Mendez-Zepeda, O; Munoz-Aguirre, S; Beltran-Perez, G; Castillo-Mixcoatl, J

    2011-01-01

    In some control and industrial measurement systems of physical variables (pressure, temperature, flow, etc) it is necessary one system and one sensor to control each process. On the other hand, there are systems such as PLC (Programmable Logic Control), which can process several signals simultaneously. However it is still necessary to use one sensor for each variable. Therefore, in the present work the use of a multipoint sensor to solve such problem has been proposed. The sensor consists of an optical fiber laser with two Fabry-Perot cavities constructed using fiber Bragg gratings (FBG). In the same system is possible to measure changes in two variables by detecting the intermodal separation frequency of each cavity and evaluate their amplitudes. The intermodal separation frequency depends on each cavity length. The sensor signals are monitored through an oscilloscope or a PCI card and after that acquired by PC, where they are analyzed and displayed. Results of the evaluation of the intermodal frequency separation peak amplitude behavior with FBG stretching are presented.

  1. Fiber Bragg grating based arterial localization device

    Science.gov (United States)

    Ho, Siu Chun Michael; Li, Weijie; Razavi, Mehdi; Song, Gangbing

    2017-06-01

    A critical first step to many surgical procedures is locating and gaining access to a patients vascular system. Vascular access allows the deployment of other surgical instruments and also the monitoring of many physiological parameters. Current methods to locate blood vessels are predominantly based on the landmark technique coupled with ultrasound, fluoroscopy, or Doppler. However, even with experience and technological assistance, locating the required blood vessel is not always an easy task, especially with patients that present atypical anatomy or suffer from conditions such as weak pulsation or obesity that make vascular localization difficult. With recent advances in fiber optic sensors, there is an opportunity to develop a new tool that can make vascular localization safer and easier. In this work, the authors present a new fiber Bragg grating (FBG) based vascular access device that specializes in arterial localization. The device estimates the location towards a local artery based on the bending of a needle inserted near the tissue surrounding the artery. Experimental results obtained from an artificial circulatory loop and a mock artery show the device works best for lower angles of needle insertion and can provide an approximately 40° range of estimation towards the location of a pulsating source (e.g. an artery).

  2. An etching mask and a method to produce an etching mask

    DEFF Research Database (Denmark)

    2016-01-01

    The present invention relates to an etching mask comprising silicon containing block copolymers produced by self-assembly techniques onto silicon or graphene substrate. Through the use of the etching mask, nanostructures having long linear features having sub-10 nm width can be produced....

  3. Effect of pre-etching on sealing ability of two current self-etching adhesives

    Directory of Open Access Journals (Sweden)

    K Khosravi

    2005-05-01

    Full Text Available Background: We evaluated the effect of phosphoric acid etching on microleakage of two current self-etching adhesives on enamel margins in comparison to a conventional total- etch system. Methods: Sixty buccal class V cavities were made at the cemento-enamel junction with beveled enamel margins of extracted human premolar teeth and randomly divided into five groups (12 specimens in each group. Group 1 was applying with Clearfil SE bond, Group 2 with 35% phosphoric acid etching of enamel margins plus Clearfil SE bond, Group3 with I bond, Group 4 with 35% phosphoric acid etching of enamel margins plus I bond and Group5 with Scotchbond multi-purpose. All groups restored with a composite resins. After 24 hours storage with 100% humidity, the samples were thermocycled, immersed in a dye solution and sectioned buccoligually and enamel margins microleakage were evaluated on a scale of 0 to 2. Results: The differences between Groups 1 & 3 and Groups 3 & 4 were significant (P<0.05 but no significant differences between Groups1 & 2 or 1 & 5 were observed. Conclusion: The findings suggest that all-in-one adhesive systems need pre-etching enamel margins with phosphoric acid for effectively seal. Key words: Self-Etching Adhesives, Microleakage, Enamel, Total-Etch system

  4. Axial contraction in etched optical fiber due to internal stress reduction.

    Science.gov (United States)

    Lim, Kok-Sing; Yang, Hang-Zhou; Chong, Wu-Yi; Cheong, Yew-Ken; Lim, Chin-Hong; Ali, Norfizah M; Ahmad, Harith

    2013-02-11

    When an optical fiber is dipped in an etching solution, the internal stress profile in the fiber varies with the fiber diameter. We observed a physical contraction as much as 0.2% in the fiber axial dimension when the fiber was reduced from its original diameter to ~6 µm through analysis using high resolution microscope images of the grating period of an etched FBG at different fiber diameters. This axial contraction is related to the varying axial stress profile in the fiber when the fiber diameter is reduced. On top of that, the refractive index of fiber core increases with reducing fiber diameter due to stress-optic effect. The calculated index increment is as much as 1.8 × 10(-3) at the center of fiber core after the diameter is reduced down to ~6 µm. In comparison with the conventional model that assumes constant grating period and neglects the variation in stress-induced index change in fiber core, our proposed model indicates a discrepancy as much as 3nm in Bragg wavelength at a fiber diameter of ~6 µm.

  5. Bragg solitons in systems with separated nonuniform Bragg grating and nonlinearity

    Science.gov (United States)

    Ahmed, Tanvir; Atai, Javid

    2017-09-01

    The existence and stability of quiescent Bragg grating solitons are systematically investigated in a dual-core fiber, where one of the cores is uniform and has Kerr nonlinearity while the other one is linear and incorporates a Bragg grating with dispersive reflectivity. Three spectral gaps are identified in the system, in which both lower and upper band gaps overlap with one branch of the continuous spectrum; therefore, these are not genuine band gaps. However, the central band gap is a genuine band gap. Soliton solutions are found in the lower and upper gaps only. It is found that in certain parameter ranges, the solitons develop side lobes. To analyze the side lobes, we have derived exact analytical expressions for the tails of solitons that are in excellent agreement with the numerical solutions. We have analyzed the stability of solitons in the system by means of systematic numerical simulations. We have found vast stable regions in the upper and lower gaps. The effect and interplay of dispersive reflectivity, the group velocity difference, and the grating-induced coupling on the stability of solitons are investigated. A key finding is that a stronger grating-induced coupling coefficient counteracts the stabilization effect of dispersive reflectivity.

  6. Copper-assisted, anti-reflection etching of silicon surfaces

    Science.gov (United States)

    Toor, Fatima; Branz, Howard

    2014-08-26

    A method (300) for etching a silicon surface (116) to reduce reflectivity. The method (300) includes electroless deposition of copper nanoparticles about 20 nanometers in size on the silicon surface (116), with a particle-to-particle spacing of 3 to 8 nanometers. The method (300) includes positioning (310) the substrate (112) with a silicon surface (116) into a vessel (122). The vessel (122) is filled (340) with a volume of an etching solution (124) so as to cover the silicon surface (116). The etching solution (124) includes an oxidant-etchant solution (146), e.g., an aqueous solution of hydrofluoric acid and hydrogen peroxide. The silicon surface (116) is etched (350) by agitating the etching solution (124) with, for example, ultrasonic agitation, and the etching may include heating (360) the etching solution (124) and directing light (365) onto the silicon surface (116). During the etching, copper nanoparticles enhance or drive the etching process.

  7. Plasma etching of niobium-SiO/sub x/ layers

    International Nuclear Information System (INIS)

    Schelle, D.; Tiller, H.J.

    1986-01-01

    CF 4 -plasma etching of niobium and SiO/sub x/ layers has been investigated in a r.f. diode reactor. Etch rates increase linearly with increasing power density and also increase with pressure. The etch rate ratio can be changed using different etch gases or operating in different plasma modes (PE or IEPE). Changing from the ion enhanced plasma etching mode (IEPE) to plasma etching mode (PE) the etch rate ratio is changing by a factor of ten. On the basis of etch rate dependences on process parametes and thermodynamic data it has been suggested the generation of fluorine radicals as the rate limiting step. A general etching model has been proposed, which explains qualitatively and quantitatively (on account of data from literature) the measured results. (author)

  8. Reactive ion etching of microphotonic structures

    International Nuclear Information System (INIS)

    Du, J.; Glasscock, J.; Vanajek, J.; Savvides, N.

    2004-01-01

    Full text: Fabrication of microphotonic structures such as planar waveguides and other periodic structures based on silicon technology has become increasingly important due to the potential for integration of planar optical devices. We have fabricated various periodic microstructures on silicon wafers using standard optical lithography and reactive ion etching (RIE). For optical applications the surface roughness and the sidewall angle or steepness of microstructures are the most critical factors. In particular, sidewall roughness of the etched waveguide core accounts for most of the optical propagation loss. We show that by varying the main RIE parameters such as gas pressure, RF power and CF 4 /Ar/O 2 gas composition it is possible to produce microstructures with near-vertical sidewalls and very smooth surfaces. In addition to plasma etching conditions, poor edge quality of the mask often causes sidewall roughness. We employed Ni/Cr metal masks in these experiments for deep etching, and used Ar + ion milling instead of wet chemical etching to open the mask. This improves the edge quality of the mask and ultimately results in smooth sidewalls

  9. Plasma etching a ceramic composite. [evaluating microstructure

    Science.gov (United States)

    Hull, David R.; Leonhardt, Todd A.; Sanders, William A.

    1992-01-01

    Plasma etching is found to be a superior metallographic technique for evaluating the microstructure of a ceramic matrix composite. The ceramic composite studied is composed of silicon carbide whiskers (SiC(sub W)) in a matrix of silicon nitride (Si3N4), glass, and pores. All four constituents are important in evaluating the microstructure of the composite. Conventionally prepared samples, both as-polished or polished and etched with molten salt, do not allow all four constituents to be observed in one specimen. As-polished specimens allow examination of the glass phase and porosity, while molten salt etching reveals the Si3N4 grain size by removing the glass phase. However, the latter obscures the porosity. Neither technique allows the SiC(sub W) to be distinguished from the Si3N4. Plasma etching with CF4 + 4 percent O2 selectively attacks the Si3N4 grains, leaving SiC(sub W) and glass in relief, while not disturbing the pores. An artifact of the plasma etching reaction is the deposition of a thin layer of carbon on Si3N4, allowing Si3N4 grains to be distinguished from SiC(sub W) by back scattered electron imaging.

  10. Effect of collagen fibrils removal on shear bond strength of total etch and self etch adhesive systems

    Directory of Open Access Journals (Sweden)

    Pishevar L.

    2009-12-01

    Full Text Available "nBackground and Aim: Sodium hypochlorite can remove the organic phase of the demineralized dentin and it produces direct resin bonding with hydroxyapatite crystals. Therefore, the hydrolytic degradation of collagen fibrils which might affect the bonding durability is removed. The aim of this study was to evaluate the effect of collagen fibrils removal by 10% NaOCl on dentin shear bond strength of two total etch and self etch adhesive systems."nMaterials and Methods: Sixty extracted human premolar teeth were used in this study. Buccal surface of teeth were grounded until dentin was exposed. Then teeth were divided into four groups. According to dentin surface treatment, experimental groups were as follows: Group I: Single Bond (3M according to manufacture instruction, Group II: 10% NaOCl+Single bond (3M, Group III: Clearfil SE Bond (Kuraray according to manufacture instruction, and Group IV: Clearfil SE Bond primer. After that, the specimens were immersed in 50% acetone solution for removing extra monomer. Then the specimens were rinsed and dried. 10% NaOCl was applied and finally adhesive was used. Then composite was bonded to the treated surfaces using a 4 2 mm cylindrical plastic mold. Specimens were thermocycled for 500 cycles (5-55ºC. A shear load was employed by a universal testing machine with a cross head speed of 1mm/min. The data were analyzed for statistical significance with One-way ANOVA, Two-way ANOVA and Tukey HSD post-hoc tests."nResults: The mean shear bond strengths of groups were as follows: Single Bond=16.8±4.2, Clearfil SE Bond=23.7±4.07, Single Bond+NaOCl=10.5±4.34, Clearfil SE Bond+NaOCl=23.3±3.65 MPa. Statistical analysis revealed that using 10% NaOCl significantly decreased the shear bond strength in Single Bond group (P=0.00, but caused no significant difference in the shear bond strength in Clearfil SE Bond group (P=0.99."nConclusion: Based on the results of this study, NaOCl treatment did not improve the bond

  11. Self-aligned mask renewal for anisotropically etched circular micro- and nanostructures

    International Nuclear Information System (INIS)

    Kaspar, Peter; Jäckel, Heinz; Holzapfel, Sebastian; Windhab, Erich J

    2011-01-01

    The top–down fabrication of high aspect ratio circular micro- and nanostructures in silicon nitride is presented. A new method is introduced to increase the aspect ratio of anisotropically etched holes by a factor of more than two with respect to the results obtained from an established dry-etching process. The method is based on the renewal of an etching mask after a first etching step has been completed. Mask renewal is done by line-of-sight deposition of a masking layer on the surface of the sample, which is mounted at an angle with respect to the deposition direction. No additional alignment step is required. The proof of principle is performed for silicon nitride etching through a mask of titanium, but the method has great potential to be applicable to a wide variety of substrate–mask combinations and to find entrance into various engineering fields. Two specific applications are highlighted. Firstly, a thick silicon nitride hardmask is used for the fabrication of deeply etched photonic crystal holes in indium phosphide (InP). For holes of 280 nm diameter, a record aspect ratio of 20 and an overall selectivity of 28.5 between a positive-tone resist layer and InP are reported. Secondly, the use of perforated silicon nitride membranes for droplet formation for applications in food engineering or pharmaceutics is addressed. Preliminary results show a potential for the self-aligned mask renewal method to exceed state-of-the-art membrane quality in terms of pore size, aspect ratio and membrane stability.

  12. Nanoporous distributed Bragg reflectors on free-standing nonpolar m-plane GaN

    Science.gov (United States)

    Mishkat-Ul-Masabih, Saadat; Luk, Ting Shan; Rishinaramangalam, Ashwin; Monavarian, Morteza; Nami, Mohsen; Feezell, Daniel

    2018-01-01

    We report the fabrication of m-plane nanoporous distributed Bragg reflectors (DBRs) on free-standing GaN substrates. The DBRs consist of 15 pairs of alternating undoped and highly doped n-type ([Si] = ˜3.7 × 1019 cm-3) GaN. Electrochemical (EC) etching was performed to convert the highly doped regions into a porous material, consequently reducing the effective refractive index of the layers. We demonstrate a DBR with peak reflectance greater than 98% at 450 nm with a stopband width of ˜72 nm. The polarization ratio of an incident polarized light source remains identical after reflection from the DBR, verifying that there is no drop in the polarization ratio due to the interfaces between the porous layers. We also quantify the porosity under various EC bias conditions for layers with different doping concentrations. The bias voltage controls the average pore diameter, while the pore density is primarily determined by the doping concentration. The results show that nanoporous DBRs on nonpolar free-standing GaN are promising candidates for high-reflectance, lattice-matched DBR mirrors for GaN-based resonant cavity devices.

  13. Capturing reflected cladding modes from a fiber Bragg grating with a double-clad fiber coupler.

    Science.gov (United States)

    Baiad, Mohamad Diaa; Gagné, Mathieu; Lemire-Renaud, Simon; De Montigny, Etienne; Madore, Wendy-Julie; Godbout, Nicolas; Boudoux, Caroline; Kashyap, Raman

    2013-03-25

    We present a novel measurement scheme using a double-clad fiber coupler (DCFC) and a fiber Bragg grating (FBG) to resolve cladding modes. Direct measurement of the optical spectra and power in the cladding modes is obtained through the use of a specially designed DCFC spliced to a highly reflective FBG written into slightly etched standard photosensitive single mode fiber to match the inner cladding diameter of the DCFC. The DCFC is made by tapering and fusing two double-clad fibers (DCF) together. The device is capable of capturing backward propagating low and high order cladding modes simply and efficiently. Also, we demonstrate the capability of such a device to measure the surrounding refractive index (SRI) with an extremely high sensitivity of 69.769 ± 0.035 μW/RIU and a resolution of 1.433 × 10(-5) ± 8 × 10(-9) RIU between 1.37 and 1.45 RIU. The device provides a large SRI operating range from 1.30 to 1.45 RIU with sufficient discrimination for all individual captured cladding modes. The proposed scheme can be adapted to many different types of bend, temperature, refractive index and other evanescent wave based sensors.

  14. High-density plasma etching characteristics of indium-gallium-zinc oxide thin films in CF4/Ar plasma

    International Nuclear Information System (INIS)

    Joo, Young-Hee; Kim, Chang-Il

    2015-01-01

    We investigated the etching process of indium-gallium-zinc oxide (IGZO) thin films in an inductively coupled plasma system. The dry etching characteristics of the IGZO thin films were studied by varying the CF 4 /Ar gas mixing ratio, RF power, DC-bias voltage, and process pressure. We determined the following optimized process conditions: an RF power of 700 W, a DC-bias voltage of − 150 V, and a process pressure of 2 Pa. A maximum etch rate of 25.63 nm/min for the IGZO thin films was achieved in a plasma with CF 4 /Ar(= 25:75), and the selectivity of IGZO to Al and TiN was found to be 1.3 and 0.7, respectively. We determined the ionic composition of the CF 4 /Ar plasma using optical emission spectroscopy. Analysis of chemical reactions at the IGZO thin film surfaces was performed using X-ray photoelectron spectroscopy. - Highlights: • IGZO thin film was etched by CF 4 /Ar plasma as a function of gas mixing ratio. • IGZO bonds were broken Ar + sputtering and then reacted with the C-F x radicals. • The physical sputtering is dominant in etch control compared with chemical etching

  15. Ga+ focused-ion-beam implantation-induced masking for H2 etching of ZnO films

    International Nuclear Information System (INIS)

    Fang, Hsin-Chiao; Huang, Jun-Han; Chu, Wen-Huei; Liu, Chuan-Pu

    2010-01-01

    Gallium implantation of ZnO by a focused-ion beam is used to create a mask for ZnO dry etching with hydrogen. Effects of Ga + fluence on the etch stop properties and the associated mechanisms are investigated. The fluence of 2.8 x 10 16 cm -2 is determined to be optimum to render the best mask quality. While lower fluences would cause less etching selectivity, higher fluences would cause erosion of the surface and particles to be precipitated on the surface after H 2 treatment at high temperature. In contrast to the commonly adopted gallium oxide formation on Si, transmission electron microscopy analysis reveals that, for the fluences ≤ 2.8 x 10 16 cm -2 , Ga + ions are incorporated as dopants into ZnO without any second phases or precipitates, indicating the Ga-doped ZnO layer behaves as a mask for H 2 etching due to the higher electronegativity of Ga + towards oxygen. However, for the fluences ≥ 4.6 x 10 16 cm -2 , the surface particles are responsible for the etch stop and are identified as ZnGa 2 O 4 . We finally demonstrate a complicated pattern of 'NCKU' on ZnO by using this technique. The study not only helps clarify the related mechanisms, but also suggests a feasible extension of the etch stop process that can be applied to more functional material.

  16. Compact imaging Bragg spectrometer for fusion devices

    International Nuclear Information System (INIS)

    Bertschinger, G.; Biel, W.; Jaegers, H.; Marchuk, O.

    2004-01-01

    A compact imaging x-ray spectrometer has been designed for tokamaks and stellarators to measure the plasma parameters at different spatial chords. It has been optimized for high spectral resolution and high sensitivity. High spectral resolution is obtained by using solid state detectors and minimizing the imaging errors of the spherical crystals. It is shown, that using spherical crystals the solid angle and hence the throughput can be increased significantly, without compromising the spectral resolution. The design is useful for the measurement of the spectra of He- and H-like ions from Si to Kr. The spectral resolution is sufficient for the measurement of plasma parameters. The temporal resolution is high enough for transport studies by gas puff and laser ablation experiments. The design is based on a modified Johann spectrometer mount, utilizing a spherically bent crystal instead of the cylindrically bent crystal in the traditional Johann mount. The astigmatism of the wavelength selective reflection on the spherical crystal is applied to obtain imaging of an extended plasma source on a two-dimensional detector. For each element, a separate crystal is required, only in few cases, a crystal can be used for the spectra of two elements. For the spectra of most of the He-like ions from Si up to Kr, suitable crystal cuts have been found on quartz, silicon and germanium crystals with Bragg angles in a small interval around the design value of 53.5 deg. All of the crystals have the same radius. They are fixed on a rotational table. The distance to the detector is adjusted by an x-y table to fit to the Rowland circle

  17. Flexible Bragg reflection waveguide devices fabricated on a plastic substrate

    Science.gov (United States)

    Kim, Kyung-Jo; Yi, Jeong-Ah; Oh, Min-Cheol; Noh, Young-Ouk; Lee, Hyung-Jong

    2007-09-01

    Bragg reflecting waveguide devices are fabricated on a flexible substrate by using a post lift-off process in order to provide highly uniform grating patterns on a wide range. In this process, the flexible substrate spin-coated on silicon wafer is released after the final fabrication process of chip dicing. The fabricated flexible Bragg reflector shows very sharp transmission spectrum with 3-dB bandwidth of 0.1 nm and 10-dB bandwidth of 0.4 nm, which proves the Bragg reflector has excellent uniformity. To achieve athermal operation of the flexible Bragg reflector, thermal expansion property of the plastic substrate is controlled by the thickness of two polymer materials constructing the plastic substrate. The flexible substrate with 0.7-μm SU-8 layers sandwiching 100-μm NOA61 layer provides an optimized thermal expansion property to compensate the thermo-optic effect of the waveguide made of ZPU polymer. The temperature dependence of the Bragg reflector is decreased to -0.011 nm/°C through the incorporation of the plastic substrate.

  18. Model calculations for electrochemically etched neutron detectors

    International Nuclear Information System (INIS)

    Pitt, E.; Scharmann, A.; Werner, B.

    1988-01-01

    Electrochemical etching has been established as a common method for visualisation of nuclear tracks in solid state nuclear track detectors. Usually the Mason equation, which describes the amplification of the electrical field strength at the track tip, is used to explain the treeing effect of electrochemical etching. The yield of neutron-induced tracks from electrochemically etched CR-39 track detectors was investigated with respect to the electrical parameters. A linear dependence on the response from the macroscopic field strength was measured which could not be explained by the Mason equation. It was found that the reality of a recoil proton track in the detector does not fit the boundary conditions which are necessary when the Mason equation is used. An alternative model was introduced to describe the track and detector geometry in the case of a neutron track detector. The field strength at the track tip was estimated with this model and compared with the experimental data, yielding good agreement. (author)

  19. Pattern transfer with stabilized nanoparticle etch masks

    International Nuclear Information System (INIS)

    Hogg, Charles R; Majetich, Sara A; Picard, Yoosuf N; Narasimhan, Amrit; Bain, James A

    2013-01-01

    Self-assembled nanoparticle monolayer arrays are used as an etch mask for pattern transfer into Si and SiO x substrates. Crack formation within the array is prevented by electron beam curing to fix the nanoparticles to the substrate, followed by a brief oxygen plasma to remove excess carbon. This leaves a dot array of nanoparticle cores with a minimum gap of 2 nm. Deposition and liftoff can transform the dot array mask into an antidot mask, where the gap is determined by the nanoparticle core diameter. Reactive ion etching is used to transfer the dot and antidot patterns into the substrate. The effect of the gap size on the etching rate is modeled and compared with the experimental results. (paper)

  20. Bond strength of self-etch adhesives after saliva contamination at different application steps.

    Science.gov (United States)

    Cobanoglu, N; Unlu, N; Ozer, F F; Blatz, M B

    2013-01-01

    This study evaluated and compared the effect of saliva contamination and possible decontamination methods on bond strengths of two self-etching adhesive systems (Clearfil SE Bond [CSE], Optibond Solo Plus SE [OSE]). Flat occlusal dentin surfaces were created on 180 extracted human molar teeth. The two bonding systems and corresponding composite resins (Clearfil AP-X, Kerr Point 4) were bonded to the dentin under six surface conditions (n=15/group): group 1 (control): primer/bonding/composite; group 2: saliva/drying/primer/bonding/composite; group 3: primer/saliva/rinsing/drying/primer/bonding/composite; group 4: primer/saliva/rinsing/drying/bonding/composite; group 5: primer/bonding (cured)/saliva/rinsing/drying/primer/bonding/composite; group 6: primer/bonding (cured)/saliva/removing contaminated layer with a bur/rinsing/drying/primer/bonding/composite. Shear bond strength was tested after specimens were stored in distilled water at 37°C for 24 hours. One-way analysis of variance and Tukey post hoc tests were used for statistical analyses. For CSE, groups 2, 3, and 4 and for OSE, groups 6, 2, and 4 showed significantly lower bond strengths than the control group (pcontamination occurred after light polymerization of the bonding agent, repeating the bonding procedure recovered the bonding capacity of both self-etch adhesives. However, saliva contamination before or after primer application negatively affected their bond strength.

  1. Etching of fused silica fiber by metallic laser-induced backside wet etching technique

    Energy Technology Data Exchange (ETDEWEB)

    Vass, Cs., E-mail: vasscsaba@physx.u-szeged.hu [Department of Optics and Quantum Electronics, University of Szeged, H-6720 Szeged, Dóm tér 9 (Hungary); Kiss, B.; Kopniczky, J.; Hopp, B. [Department of Optics and Quantum Electronics, University of Szeged, H-6720 Szeged, Dóm tér 9 (Hungary)

    2013-08-01

    The tip of multimode fused silica fiber (core diameter: 550 μm) was etched by metallic laser-induced backside wet etching (M-LIBWE) method. Frequency doubled, Q-switched Nd:YAG laser (λ = 532 nm; τ{sub FWHM} = 8 ns) was used as laser source. The laser beam was coupled into the fiber by a fused silica lens with a focal length of 1500 mm. The other tip of the fiber was dipped into liquid gallium metallic absorber. The etching threshold fluence was measured to be 475 mJ/cm{sup 2}, while the highest fluence, which resulted etching without breaking the fiber, was 1060 mJ/cm{sup 2}. The progress of etching was followed by optical microscopy, and the etch rate was measured to be between 20 and 37 nm/pulse depending on the applied laser energy. The surface morphologies of the etched tips were studied by scanning electron microscopy. A possible application of the structured fibers was also tested.

  2. Etching of fused silica fiber by metallic laser-induced backside wet etching technique

    International Nuclear Information System (INIS)

    Vass, Cs.; Kiss, B.; Kopniczky, J.; Hopp, B.

    2013-01-01

    The tip of multimode fused silica fiber (core diameter: 550 μm) was etched by metallic laser-induced backside wet etching (M-LIBWE) method. Frequency doubled, Q-switched Nd:YAG laser (λ = 532 nm; τ FWHM = 8 ns) was used as laser source. The laser beam was coupled into the fiber by a fused silica lens with a focal length of 1500 mm. The other tip of the fiber was dipped into liquid gallium metallic absorber. The etching threshold fluence was measured to be 475 mJ/cm 2 , while the highest fluence, which resulted etching without breaking the fiber, was 1060 mJ/cm 2 . The progress of etching was followed by optical microscopy, and the etch rate was measured to be between 20 and 37 nm/pulse depending on the applied laser energy. The surface morphologies of the etched tips were studied by scanning electron microscopy. A possible application of the structured fibers was also tested.

  3. Impact of recess etching and surface treatments on ohmic contacts regrown by molecular-beam epitaxy for AlGaN/GaN high electron mobility transistors

    Energy Technology Data Exchange (ETDEWEB)

    Joglekar, S.; Azize, M.; Palacios, T. [Microsystems Technology Laboratories, Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, Massachusetts 02139 (United States); Beeler, M.; Monroy, E. [Université Grenoble-Alpes, 38000 Grenoble (France); CEA Grenoble, INAC-PHELIQS, 38000 Grenoble (France)

    2016-07-25

    Ohmic contacts fabricated by regrowth of n{sup +} GaN are favorable alternatives to metal-stack-based alloyed contacts in GaN-based high electron mobility transistors. In this paper, the influence of reactive ion dry etching prior to regrowth on the contact resistance in AlGaN/GaN devices is discussed. We demonstrate that the dry etch conditions modify the surface band bending, dangling bond density, and the sidewall depletion width, which influences the contact resistance of regrown contacts. The impact of chemical surface treatments performed prior to regrowth is also investigated. The sensitivity of the contact resistance to the surface treatments is found to depend upon the dangling bond density of the sidewall facets exposed after dry etching. A theoretical model has been developed in order to explain the observed trends.

  4. Fabrication et applications des reseaux de Bragg ultra-longs

    Science.gov (United States)

    Gagne, Mathieu

    This thesis presents the principal accomplishments realized during the PhD project. The thesis is presented by publication format and is a collection of four published articles having fiber Bragg gratings as a central theme. First achieved in 1978, UV writing of fiber Bragg gratings is nowadays a common and mature technology being present in both industry and academia. The property of reflecting light guided by optical fibers lead to diverse applications in telecommunication, lasers as well as several types of sensors. The conventional fabrication technique is generally based on the use of generally expensive phase masks which determine the obtained characteristics of the fiber Bragg grating. The fiber being photosensitive at those wavelengths, a periodic pattern can be written into it. The maximal length, the period, the chirp, the index contrast and the apodisation are all characteristics that depend on the phase mask. The first objective of the research project is to be able to go beyond this strong dependance on the phase mask without deteriorating grating quality. This is what really sets apart the technique presented in this thesis from other long fiber Bragg grating fabrication techniques available in the literature. The fundamental approach to obtain ultra long fiber Bragg gratings of arbitrary profile is to replace the scheme of scanning a UV beam across a phase mask to expose a fixed fiber by a scheme where the UV beam and phase mask are fixed and where the fiber is moving instead. To obtain a periodic index variation, the interference pattern itself must be synchronized with the moving fiber. Two variations of this scheme were implanted: the first one using electro-optical phase modulator placed in each arm of a Talbot interferometer and the second one using a phase mask mounted on a piezo electric actuator. A new scheme that imparts fine movements of the interferometer is also implemented for the first time and showed to be essential to achieve high

  5. Wavelength interrogation of fiber Bragg grating sensors using tapered hollow Bragg waveguides.

    Science.gov (United States)

    Potts, C; Allen, T W; Azar, A; Melnyk, A; Dennison, C R; DeCorby, R G

    2014-10-15

    We describe an integrated system for wavelength interrogation, which uses tapered hollow Bragg waveguides coupled to an image sensor. Spectral shifts are extracted from the wavelength dependence of the light radiated at mode cutoff. Wavelength shifts as small as ~10  pm were resolved by employing a simple peak detection algorithm. Si/SiO₂-based cladding mirrors enable a potential operational range of several hundred nanometers in the 1550 nm wavelength region for a taper length of ~1  mm. Interrogation of a strain-tuned grating was accomplished using a broadband amplified spontaneous emission (ASE) source, and potential for single-chip interrogation of multiplexed sensor arrays is demonstrated.

  6. Atomic Layer Etching of Silicon to Solve ARDE-Selectivity-Profile-Uniformity Trade-Offs

    Science.gov (United States)

    Wang, Mingmei; Ranjan, Alok; Ventzek, Peter; Koshiishi, Akira

    2014-10-01

    With shrinking critical dimensions, dry etch faces more and more challenges. Minimizing each of aspect ratio dependent etching (ARDE), bowing, undercut, selectivity, and within die uniformly across a wafer are met by trading off one requirement against another. At the root of the problem is that roles radical flux, ion flux and ion energy play may be both good and bad. Increasing one parameter helps meeting one requirement but hinders meeting the other. Self-limiting processes like atomic layer etching (ALE) promise a way to escape the problem of balancing trade-offs. ALE was realized in the mid-1990s but the industrial implementation has been slow. In recent years interest in ALE has revived. We present how ARDE, bowing/selectivity trade-offs may be overcome by varying radical/ion ratio, byproduct re-deposition. We overcome many of the practical implementation issues associated with ALE by precise passivation process control. The Monte Carlo Feature Profile Model (MCFPM) is used to illustrate realistic scenarios built around an Ar/Cl2 chemistry driven etch of Si masked by SiO2. We demonstrate that ALE can achieve zero ARDE and infinite selectivity. Profile control depends on careful management of the ion energies and angles. For ALE to be realized in production environment, tight control of IAD is a necessary. Experimental results are compared with simulation results to provide context to the work.

  7. DURIP 99 - Instrumentation for Deposition and Etching of Ferromagnetic Nanoparticles

    National Research Council Canada - National Science Library

    Kummel, Andrew

    2000-01-01

    .... Since silver is much more difficult to etch than iron due to the lack of volatile silver halides, this spontaneous coating of Fe by Ag explains the difficulty in etching Fe particles deposited on Ag substrates. (b...

  8. Influence of different pre-etching times on fatigue strength of self-etch adhesives to dentin.

    Science.gov (United States)

    Takamizawa, Toshiki; Barkmeier, Wayne W; Tsujimoto, Akimasa; Suzuki, Takayuki; Scheidel, Donal D; Erickson, Robert L; Latta, Mark A; Miyazaki, Masashi

    2016-04-01

    The purpose of this study was to use shear bond strength (SBS) and shear fatigue strength (SFS) testing to determine the influence on dentin bonding of phosphoric acid pre-etching times before the application of self-etch adhesives. Two single-step self-etch universal adhesives [Prime & Bond Elect (EL) and Scotchbond Universal (SU)], a conventional single-step self-etch adhesive [G-aenial Bond (GB)], and a two-step self-etch adhesive [OptiBond XTR (OX)] were used. The SBS and SFS values were obtained with phosphoric acid pre-etching times of 3, 10, or 15 s before application of the adhesives, and for a control without pre-etching. For groups with 3 s of pre-etching, SU and EL showed higher SBS values than control groups. No significant difference was observed for GB among the 3 s, 10 s, and control groups, but the 15 s pre-etching group showed significantly lower SBS and SFS values than the control group. No significant difference was found for OX among the pre-etching groups. Reducing phosphoric acid pre-etching time can minimize the adverse effect on dentin bonding durability for the conventional self-etch adhesives. Furthermore, a short phosphoric acid pre-etching time enhances the dentin bonding performance of universal adhesives. © 2016 Eur J Oral Sci.

  9. Security System Responsive to Optical Fiber Having Bragg Grating

    Science.gov (United States)

    Gary, Charles K. (Inventor); Ozcan, Meric (Inventor)

    1997-01-01

    An optically responsive electronic lock is disclosed comprising an optical fiber serving as a key and having Bragg gratings placed therein. Further, an identification system is disclosed which has the optical fiber serving as means for tagging and identifying an object. The key or tagged object is inserted into a respective receptacle and the Bragg gratings cause the optical fiber to reflect a predetermined frequency spectra pattern of incident light which is detected by a decoder and compared against a predetermined spectrum to determine if an electrical signal is generated to either operate the lock or light a display of an authentication panel.

  10. UV writing of advanced Bragg gratings in optical waveguides

    DEFF Research Database (Denmark)

    Jensen, Jesper Bo Damm

    2002-01-01

    of the novel polarization control method for UV writing of Bragg gratings with advanced apodization profiles including phase shifts. The principle of the polarization control method relies on a spatial separation of the s- and p-polarized components of a linearly polarized UV beam corresponding to half......, Technical University of Denmark. During fabrication the planar waveguides were annealed in an oxygen rich atmosphere. This reduces the photosensitivity to a negligible level and Bragg gratings cannot be written within reasonable time unless the waveguides are sensitized by deuterium loading. Samples were...

  11. Optimization of the etch-and-rinse technique: New perspectives to improve resin-dentin bonding and hybrid layer integrity by reducing residual water using dimethyl sulfoxide pretreatments.

    Science.gov (United States)

    Stape, Thiago Henrique Scarabello; Tjäderhane, Leo; Abuna, Gabriel; Sinhoreti, Mário Alexandre Coelho; Martins, Luís Roberto Marcondes; Tezvergil-Mutluay, Arzu

    2018-04-13

    To determine whether bonding effectiveness and hybrid layer integrity on acid-etched dehydrated dentin would be comparable to the conventional wet-bonding technique through new dentin biomodification approaches using dimethyl sulfoxide (DMSO). Etched dentin surfaces from extracted sound molars were randomly bonded in wet or dry conditions (30s air drying) with DMSO/ethanol or DMSO/H 2 O as pretreatments using a simplified (Scotchbond Universal Adhesive, 3M ESPE: SU) and a multi-step (Adper Scotchbond Multi-Purpose, 3M ESPE: SBMP) etch-and-rinse adhesives. Untreated dentin surfaces served as control. Bonded teeth (n=8) were stored in distilled water for 24h and sectioned into resin-dentin beams (0.8mm 2 ) for microtensile bond strength test and quantitative interfacial nanoleakage analysis (n=8) under SEM. Additional teeth (n=2) were prepared for micropermeability assessment by CFLSM under simulated pulpar pressure (20cm H 2 O) using 5mM fluorescein as a tracer. Microtensile data was analyzed by 3-way ANOVA followed by Tukey Test and nanoleakage by Kruskal-Wallis and Dunn-Bonferroni multiple comparison test (α=0.05). While dry-bonding of SBMP produced significantly lower bond strengths than wet-bonding (padhesives to demineralized air-dried dentin beyond conventional wet-bonding. Less porous resin-dentin interfaces with higher bond strengths on air-dried etched dentin were achieved; nonetheless, overall efficiency varied according to DMSO's co-solvent and adhesive type. DMSO pretreatments permit etched dentin to be air-dried before hybridization facilitating residual water removal and thus improving bonding effectiveness. This challenges the current paradigm of wet-bonding requirement for the etch-and-rinse approach creating new possibilities to enhance the clinical longevity of resin-dentin interfaces. Copyright © 2018 The Academy of Dental Materials. Published by Elsevier Inc. All rights reserved.

  12. Special equipment for etching nitrocellulose film

    International Nuclear Information System (INIS)

    Domanus, J.C.

    1983-08-01

    Nitrocellulose film and converter screens used for neutron radiography are described. Difficulties in visualization of radiographs on those films are mentioned. Because there is no equipment for etching nitrocellulose film available on the market Risoe has designed and produced such equipment at an estimated cost of Dkr. 15,000. Design criteria for this equipment are given and its performance described

  13. Technique for etching monolayer and multilayer materials

    Science.gov (United States)

    Bouet, Nathalie C. D.; Conley, Raymond P.; Divan, Ralu; Macrander, Albert

    2015-10-06

    A process is disclosed for sectioning by etching of monolayers and multilayers using an RIE technique with fluorine-based chemistry. In one embodiment, the process uses Reactive Ion Etching (RIE) alone or in combination with Inductively Coupled Plasma (ICP) using fluorine-based chemistry alone and using sufficient power to provide high ion energy to increase the etching rate and to obtain deeper anisotropic etching. In a second embodiment, a process is provided for sectioning of WSi.sub.2/Si multilayers using RIE in combination with ICP using a combination of fluorine-based and chlorine-based chemistries and using RF power and ICP power. According to the second embodiment, a high level of vertical anisotropy is achieved by a ratio of three gases; namely, CHF.sub.3, Cl.sub.2, and O.sub.2 with RF and ICP. Additionally, in conjunction with the second embodiment, a passivation layer can be formed on the surface of the multilayer which aids in anisotropic profile generation.

  14. Current problems in chemical track etching

    International Nuclear Information System (INIS)

    Somogyi, G.

    1984-01-01

    A schematic survey is given on the current relevant problems of the etching (or revelation) of multi-track and single-track events in dielectric solids. Some aspects of the research trends and possible new applications of the effects observable here, are also considered. (author)

  15. More vertical etch profile using a Faraday cage in plasma etching

    Science.gov (United States)

    Cho, Byeong-Ok; Hwang, Sung-Wook; Ryu, Jung-Hyun; Moon, Sang Heup

    1999-05-01

    Scanning electron microscope images of sidewalls obtained by plasma etching of an SiO2 film with and without a Faraday cage have been compared. When the substrate film is etched in the Faraday cage, faceting is effectively suppressed and the etch profile becomes more vertical regardless of the process conditions. This is because the electric potential in the cage is nearly uniform and therefore distortion of the electric field at the convex corner of a microfeature is prevented. The most vertical etch profile is obtained when the cage is used in fluorocarbon plasmas, where faceting is further suppressed due to the decrease in the chemical sputtering yield and the increase in the radical/ion flux on the substrate.

  16. Shear Bond Strength of Saliva Contaminated and Re-etched All-in-One Adhesive to Enamel

    Directory of Open Access Journals (Sweden)

    M. Khoroushi

    2008-12-01

    Full Text Available Objective: The aim of this study was to investigate the effect of phosphoric acid re-etching of an enamel surface treated via a one-bottle adhesive system on shear bond strength between resin composite and the enamelsurface in different stages of adhesive application.Materials and Methods: Extracted intact premolars (n=84 were divided into sevengroups (n=12. In the control group 1, the adhesive i-Bond was used according to the manufacturer's instructions, with nocontamination. In groups 2 to 4, the conditioned and saliva, contaminated enamel was blot dried only, rinsed,and blot dried, rinsed blot dried and re-etched, respectively. In groups 5, 6and 7 cured adhesive was contaminated with saliva and then rinsed and blot-dried, blot dried only and rinsed, blot-dried and re-etched respectively. In groups 3, 4, 6 and 7 the adhesive was reapplied. Afterward, Z100 compos-ite cylinders were bonded to the enamel surfaces. The samples were thermocycled (5°C and 55°C, 30 s, dwelling time: 10 s, 500 cycles. Finally, the samples were sheared using Dartec testing machine and shear bond strength data were subjected to one-way ANOVA analysis and Tukey's HSD test.Results: There were statistically significant differences among groups 1 and 5-7. The samples in groups 1 and 4 demonstrated higher bond strengths than those in the other groups.Conclusion: Using phosphoric acid etching may be effective, only where contamination occurs prior to curing of the adhesive. After curing of the adhesive, none of the methods in this study would be preferred.

  17. Comparison of Self-Etch Primers with Conventional Acid Etching System on Orthodontic Brackets

    Science.gov (United States)

    Zope, Amit; Zope-Khalekar, Yogita; Chitko, Shrikant S.; Kerudi, Veerendra V.; Patil, Harshal Ashok; Jaltare, Pratik; Dolas, Siddhesh G

    2016-01-01

    Introduction The self-etching primer system consists of etchant and primer dispersed in a single unit. The etching and priming are merged as a single step leading to fewer stages in bonding procedure and reduction in the number of steps that also reduces the chance of introduction of error, resulting in saving time for the clinician. It also results in smaller extent of enamel decalcification. Aim To compare the Shear Bond Strength (SBS) of orthodontic bracket bonded with Self-Etch Primers (SEP) and conventional acid etching system and to study the surface appearance of teeth after debonding; etching with conventional acid etch and self-etch priming, using stereomicroscope. Materials and Methods Five Groups (n=20) were created randomly from a total of 100 extracted premolars. In a control Group A, etching of enamel was done with 37% phosphoric acid and bonding of stainless steel brackets with Transbond XT (3M Unitek, Monrovia, California). Enamel conditioning in left over four Groups was done with self-etching primers and adhesives as follows: Group B-Transbond Plus (3M Unitek), Group C Xeno V+ (Dentsply), Group D-G-Bond (GC), Group E-One-Coat (Coltene). The Adhesive Remnant Index (ARI) score was also evaluated. Additionally, the surface roughness using profilometer were observed. Results Mean SBS of Group A was 18.26±7.5MPa, Group B was 10.93±4.02MPa, Group C was 6.88±2.91MPa while of Group D was 7.78±4.13MPa and Group E was 10.39±5.22MPa respectively. In conventional group ARI scores shows that over half of the adhesive was remaining on the surface of tooth (score 1 to 3). In self-etching primer groups ARI scores show that there was no or minor amount of adhesive remaining on the surface of tooth (score 4 and 5). SEP produces a lesser surface roughness on the enamel than conventional etching. However, statistical analysis shows significant correlation (pbracket bonding after enamel conditioning with any of the SEPs tested. The SEPs used in Groups C (Xeno V

  18. Bulk and track etching of PET studied by spectrophotometer

    International Nuclear Information System (INIS)

    Zhu, Z.Y.; Duan, J.L.; Maekawa, Y.; Koshikawa, H.; Yoshida, M.

    2004-01-01

    UV-VIS spectra of poly(ethylene terephthalate) (PET) solutions formed by etching PET in NaOH solution were analyzed with respect to the etching time. A linear relationship between absorptions centered at 4.45 and 5.11 eV with weight loss of PET in NaOH solution was established. The relation was applied to study the influence of UV light illumination on bulk etching of PET and to evaluate pore size of etched-through tracks. It is found that bulk etching of PET can be greatly enhanced by UV illumination in air in the wavelength range around 313 nm. A surface area of about 350 nm in thickness shows a 23 times increase in bulk-etching rate after illuminated for 6 h. The phenomenon is attributed to the oxygen-assisted photo-degradation through generating of new photo-unstable species. The enhancement in bulk etching was immediately reduced as the etching proceeds below the surface with an exponential decay constant of about 1.5 μm -1 . Etching of Xe ion irradiated PET films gives extra etching products with similar chemical structure as revealed by spectrophotometer measurements. Quantitative analysis of etching products from latent tracks implies that pores of about 14.6 nm in radius are formed after etching in 0.74 N NaOH at 40 deg. C for 35 min, which is in agreement with the conductometric measurement

  19. Method of plastic track detector electrochemical etching

    International Nuclear Information System (INIS)

    D'yakov, A.A.

    1984-01-01

    The review of studies dealing with the development of the method for the electro-chemical etching (ECE) of the plastic track detectors on the base of polyethy-leneterephthalate (PET) and polycarbonate (PC) is given. Physical essence of the method, basic parameters of the processes, applied equipment and methods of measurement automation are considered. The advantages of the method over the traditional chemical etching are pointed out. Recommendations on the detector operation modes when detecting fission fragments, α-particles and fast neutrons are given. The ECE method is based on the condition that during chemical etching the high-voltage sound frequency alternating electric field is applied to the detector. In this case the detector serves as an isolating layer betWeen two vessels with etching solution in which high-voltage electrode are submerged. At a fixed electric field potential higher (over than the threshold value) at the end of the etching track cone atree-like discharge spot arises. It is shown that when PET is used for fast neutron detection it is advisable to apply for ECE the PEW solution (15g KOH+40 g C 2 H 2 OH + 45g H 2 O) the field potential should constitute 30 kVxcm -1 at the freqUency of 9 kHz. In the case of fission fragment detection Using ECE and PC the following ECE conditions are recommended: 30% KOH etcher, field potential of 10 kVxcm -1 , 2-4 kHz frequency. It is concluded that the ECE method permits considerably eXtend the sphere of plastic track detector application for detecting ionizing particles,

  20. Dry cell battery poisoning

    Science.gov (United States)

    Batteries - dry cell ... Acidic dry cell batteries contain: Manganese dioxide Ammonium chloride Alkaline dry cell batteries contain: Sodium hydroxide Potassium hydroxide Lithium dioxide dry cell batteries ...

  1. Four-year water degradation of a total-etch and two self-etching adhesives bonded to dentin

    NARCIS (Netherlands)

    Abdalla, A.I.; Feilzer, A.J.

    2008-01-01

    Objectives: To evaluate effect of direct and indirect water storage on the microtensile dentin bond strength of one total-etch and two self-etching adhesives. Methods: The adhesive materials were: one total-etch adhesive; ‘Admira Bond’ and two selfetch adhesives; ‘Clearfil SE Bond’ and ‘Hybrid

  2. Fabrication and Optical Characterization of Silicon Nanostructure Arrays by Laser Interference Lithography and Metal-Assisted Chemical Etching

    Directory of Open Access Journals (Sweden)

    P. Heydari

    2014-10-01

    Full Text Available In this paper metal-assisted chemical etching has been applied to pattern porous silicon regions and silicon nanohole arrays in submicron period simply by using positive photoresist as a mask layer. In order to define silicon nanostructures, Metal-assisted chemical etching (MaCE was carried out with silver catalyst. Provided solution (or materiel in combination with laser interference lithography (LIL fabricated different reproducible pillars, holes and rhomboidal structures. As a result, Submicron patterning of porous areas and nanohole arrays on Si substrate with a minimum feature size of 600nm was achieved. Measured reflection spectra of the samples present different optical characteristics which is dependent on the shape, thickness of metal catalyst and periodicity of the structure. These structures can be designed to reach a photonic bandgap in special range or antireflection layer in energy harvesting applications. The resulted reflection spectra of applied method are comparable to conventional expensive and complicated dry etching techniques.

  3. Rational solitons in deep nonlinear optical Bragg grating

    NARCIS (Netherlands)

    Alatas, H.; Iskandar, A.A.; Tjia, M.O.; Valkering, T.P.

    2006-01-01

    We have examined the rational solitons in the Generalized Coupled Mode model for a deep nonlinear Bragg grating. These solitons are the degenerate forms of the ordinary solitons and appear at the transition lines in the parameter plane. A simple formulation is presented for the investigation of the

  4. Development of variable-magnification X-ray Bragg optics.

    Science.gov (United States)

    Hirano, Keiichi; Yamashita, Yoshiki; Takahashi, Yumiko; Sugiyama, Hiroshi

    2015-07-01

    A novel X-ray Bragg optics is proposed for variable-magnification of an X-ray beam. This X-ray Bragg optics is composed of two magnifiers in a crossed arrangement, and the magnification factor, M, is controlled through the azimuth angle of each magnifier. The basic properties of the X-ray optics such as the magnification factor, image transformation matrix and intrinsic acceptance angle are described based on the dynamical theory of X-ray diffraction. The feasibility of the variable-magnification X-ray Bragg optics was verified at the vertical-wiggler beamline BL-14B of the Photon Factory. For X-ray Bragg magnifiers, Si(220) crystals with an asymmetric angle of 14° were used. The magnification factor was calculated to be tunable between 0.1 and 10.0 at a wavelength of 0.112 nm. At various magnification factors (M ≥ 1.0), X-ray images of a nylon mesh were observed with an air-cooled X-ray CCD camera. Image deformation caused by the optics could be corrected by using a 2 × 2 transformation matrix and bilinear interpolation method. Not only absorption-contrast but also edge-contrast due to Fresnel diffraction was observed in the magnified images.

  5. Bragg peak and relative biological efficiency of different ions

    Czech Academy of Sciences Publication Activity Database

    Lokajíček st., Miloš; Judas, Libor; Kundrát, Pavel

    2002-01-01

    Roč. 64, Suppl. 1 (2002), S309-S309 ISSN 0167-8140 R&D Projects: GA AV ČR(CZ) KSK4055109 Keywords : Bragg peak * relative biological efficisncy * radiological mechanism Subject RIV: CC - Organic Chemistry Impact factor: 2.838, year: 2002

  6. Polarization control method for UV writing of advanced bragg gratings

    DEFF Research Database (Denmark)

    Deyerl, Hans-Jürgen; Plougmann, Nikolai; Jensen, Jesper Bo Damm

    2002-01-01

    We report the application of the polarization control method for the UV writing of advanced fiber Bragg gratings (FBG). We demonstrate the strength of the new method for different apodization profiles, including the Sinc-profile and two designs for dispersion-free square filters. The method has...

  7. Crystal clear the autobiographies of Sir Lawrence and Lady Bragg

    CERN Document Server

    Thomson, Patience

    2015-01-01

    The main body of this book contains the hitherto unpublished autobiographies of both William Lawrence Bragg, an innovative scientist who won the Nobel Prize for Physics in 1915, and his wife, Alice, a Mayor of Cambridge and National Chairman of Marriage Guidance. Their autobiographies give unusual insights into the lives and times of two distinguished people and the real personalities behind their public appearance.

  8. Confinement less spectral behavior in hollow-core Bragg fibers

    DEFF Research Database (Denmark)

    Foroni, M.; Passaro, D.; Poli, F.

    2007-01-01

    The influence of each cross-section geometric parameter on hollow-core Bragg fiber guiding properties has been numerically investigated. Fabricated fibers have been modeled, giving insight into the spectral behavior of the confinement loss. It has been verified that, by changing the amount...

  9. Ultrafast Laser Fabrication of Bragg Waveguides in GLS Chalcogenide Glass

    Directory of Open Access Journals (Sweden)

    McMillen Ben

    2013-11-01

    Full Text Available We present work on the fabrication of Bragg waveguides in gallium-lanthanum-sulfide chalcogenide glass using an ultrafast laser. Waveguides were written with a single pass while modulating the writing beam. The spatial and temporal profile of the writing beam was ontrolled during waveguide fabrication in order to control the shape and size of the waveguide cross-section.

  10. Infrared diffractive filtering for extreme ultraviolet multilayer Bragg reflectors

    NARCIS (Netherlands)

    Medvedev, Viacheslav; van den Boogaard, Toine; van der Meer, R.; Yakshin, Andrey; Louis, Eric; Krivtsun, V.M.; Bijkerk, Frederik

    2013-01-01

    Abstract: We report on the development of a hybrid mirror realized by integrating an EUV-reflecting multilayer coating with a lamellar grating substrate. This hybrid irror acts as an efficient Bragg reflector for extreme ultraviolet (EUV) radiation at a given wavelength while simultaneously

  11. Development of tilted fibre Bragg gratings using highly coherent 255 ...

    Indian Academy of Sciences (India)

    R&D C-1 Block, Raja Ramanna Centre for Advanced Technology, Indore 452 013, India. ∗. Corresponding author. E-mail: oprakash@rrcat.gov.in. DOI: 10.1007/s12043-013-0672-7; ePublication: 6 February 2014. Abstract. This paper reports the study on development of tilted fibre Bragg gratings using highly coherent 255 ...

  12. Laser sensor with Bragg gratings of fiber optics to physics parameter measuring

    International Nuclear Information System (INIS)

    Vazquez, R.; Garcia, C.; May, M.; Camas, J.

    2009-01-01

    We present the operation of a fiber laser sensor made by an Erbium Doped Fiber pumped at 980nm, an 4.23 km passive fiber and two fiber Bragg gratings placed at the ends of the laser cavity. Under normal conditions, the Bragg gratings have different reflection wavelengths and laser emission is not generated. The two Bragg gratings can be placed at the same reflection wavelength when the Bragg grating with the lowest reflective wavelength increases their temperature which can be used as a sensor element. The laser generation thus shows that the Bragg grating is increasing their temperature. We used a Peltier cell for to change gradually the temperature. (Author)

  13. SU-8 etching in inductively coupled oxygen plasma

    DEFF Research Database (Denmark)

    Rasmussen, Kristian Hagsted; Keller, Stephan Sylvest; Jensen, Flemming

    2013-01-01

    Structuring or removal of the epoxy based, photo sensitive polymer SU-8 by inductively coupled plasma reactive ion etching (ICP-RIE) was investigated as a function of plasma chemistry, bias power, temperature, and pressure. In a pure oxygen plasma, surface accumulation of antimony from the photo......-initiator introduced severe roughness and reduced etch rate significantly. Addition of SF6 to the plasma chemistry reduced the antimony surface concentration with lower roughness and higher etch rate as an outcome. Furthermore the etch anisotropy could be tuned by controlling the bias power. Etch rates up to 800 nm...

  14. Influence of Etching Protocol and Silane Treatment with a Universal Adhesive on Lithium Disilicate Bond Strength.

    Science.gov (United States)

    Kalavacharla, V K; Lawson, N C; Ramp, L C; Burgess, J O

    2015-01-01

    To measure the effects of hydrofluoric acid (HF) etching and silane prior to the application of a universal adhesive on the bond strength between lithium disilicate and a resin. Sixty blocks of lithium disilicate (e.max CAD, Ivoclar Vivadent) were sectioned into coupons and polished. Specimens were divided into six groups (n=10) based on surface pretreatments, as follows: 1) no treatment (control); 2) 5% HF etch for 20 seconds (5HF); 3) 9.5% HF etch for 60 seconds (9.5HF); 4) silane with no HF (S); 5) 5% HF for 20 seconds + silane (5HFS); and 6) 9.5% HF for 60 seconds + silane (9.5HFS). All etching was followed by rinsing, and all silane was applied in one coat for 20 seconds and then dried. The universal adhesive (Scotchbond Universal, 3M ESPE) was applied onto the pretreated ceramic surface, air thinned, and light cured for 10 seconds. A 1.5-mm-diameter plastic tube filled with Z100 composite (3M ESPE) was applied over the bonded ceramic surface and light cured for 20 seconds on all four sides. The specimens were thermocycled for 10,000 cycles (5°C-50°C/15 s dwell time). Specimens were loaded until failure using a universal testing machine at a crosshead speed of 1 mm/min. The peak failure load was used to calculate the shear bond strength. Scanning electron microscopy images were taken of representative e.max specimens from each group. A two-way analysis of variance (ANOVA) determined that there were significant differences between HF etching, silane treatment, and the interaction between HF and silane treatment (puniversal adhesive.

  15. Response of fiber Bragg gratings to longitudinal ultrasonic waves.

    Science.gov (United States)

    Minardo, Aldo; Cusano, Andrea; Bernini, Romeo; Zeni, Luigi; Giordano, Michele

    2005-02-01

    In the last years, fiber optic sensors have been widely exploited for several sensing applications, including static and dynamic strain measurements up to acoustic detection. Among these, fiber Bragg grating sensors have been indicated as the ideal candidate for practical structural health monitoring in light of their unique advantages over conventional sensing devices. Although this class of sensors has been successfully tested for static and low-frequency measurements, the identification of sensor performances for high-frequency detection, including acoustic emission and ultrasonic investigations, is required. To this aim, the analysis of feasibilty on the use of fiber Bragg grating sensors as ultrasonic detectors has been carried out. In particular, the response of fiber Bragg gratings subjected to the longitudinal ultrasonic (US) field has been theoretically and numerically investigated. Ultrasonic field interaction has been modeled, taking into account the direct deformation of the grating pitch combined with changes in local refractive index due to the elasto-optic effect. Numerical results, obtained for both uniform and Gaussian-apodized fiber Bragg gratings, show that the grating spectrum is strongly influenced by the US field in terms of shape and central wavelength. In particular, a key parameter affecting the grating response is the ratio between the US wavelength and the grating length. Normal operation characterized by changes in wavelength of undistorted Bragg peak is possible only for US wavelengths longer than the grating length. For US wavelengths approaching the grating length, the wavelength change is accompanied by subpeaks formation and main peak amplitude modulation. This effect can be attributed to the nonuniformity of the US perturbation along the grating length. At very high US frequencies, the grating is not sensitive any longer. The results of this analysis provide useful tools for the design of grating-based ultrasound sensors for

  16. Comparative study of resist stabilization techniques for metal etch processing

    Science.gov (United States)

    Becker, Gerry; Ross, Matthew F.; Wong, Selmer S.; Minter, Jason P.; Marlowe, Trey; Livesay, William R.

    1999-06-01

    This study investigates resist stabilization techniques as they are applied to a metal etch application. The techniques that are compared are conventional deep-UV/thermal stabilization, or UV bake, and electron beam stabilization. The electron beam tool use din this study, an ElectronCure system from AlliedSignal Inc., ELectron Vision Group, utilizes a flood electron source and a non-thermal process. These stabilization techniques are compared with respect to a metal etch process. In this study, two types of resist are considered for stabilization and etch: a g/i-line resist, Shipley SPR-3012, and an advanced i-line, Shipley SPR 955- Cm. For each of these resist the effects of stabilization on resist features are evaluated by post-stabilization SEM analysis. Etch selectivity in all cases is evaluated by using a timed metal etch, and measuring resists remaining relative to total metal thickness etched. Etch selectivity is presented as a function of stabilization condition. Analyses of the effects of the type of stabilization on this method of selectivity measurement are also presented. SEM analysis was also performed on the features after a compete etch process, and is detailed as a function of stabilization condition. Post-etch cleaning is also an important factor impacted by pre-etch resist stabilization. Results of post- etch cleaning are presented for both stabilization methods. SEM inspection is also detailed for the metal features after resist removal processing.

  17. Influence factors on etching rate of PET nuclear pore membrane

    International Nuclear Information System (INIS)

    Zuo Zhenzhong; Wu Zhendong; Liang Haiying; Ju Wei; Chen Dongfeng; Fu Yuanyong; Qu Guopu

    2014-01-01

    Background: The nuclear pore membrane is a kind of liquid filtration material manufactured by irradiation and chemical etching. Various conditions in etch process have a great influence on etch rate. Purpose: The influence factors of concentration and temperature of etch solution and the irradiation energy of heavy ions on etch rate was studied. Methods: Four layers of PET (polyethylene terephthalate) films were stacked together and were irradiated with 140-MeV 32 S ions at room temperature under vacuum conditions. Utilizing conductivity measurement technique, the electrical current changes through the u:radiated PET film were monitored during etching, from which the breakthrough time and therefore the track etching rate was calculated. Results: The results show that there is an exponential correlation between etch rate and temperature, and a linear correlation between etch rate and concentration. The track etching rate increases linearly with energy loss rate. Empirical formula for the bulk etching rate as a function of etchant concentration and temperature was also established via fitting of measurements. Conclusion: It is concluded that by using 1.6-MeV·u -1 32 S ions, PET nuclear pore membrane with cylindrical pore shape can be prepared at 85℃ with etchant concentration of l mol·L -1 . (authors)

  18. Si etching with reactive neutral beams of very low energy

    Energy Technology Data Exchange (ETDEWEB)

    Hara, Yasuhiro [Organization for Research and Development of Innovative Science and Technology, Kansai University, 3-3-35 Yamate-chou, Suita, Osaka 565-0871 (Japan); Hamagaki, Manabu; Mise, Takaya [RIKEN, 2-1, Hirosawa, Wako, Saitama 351-0198 (Japan); Iwata, Naotaka; Hara, Tamio [Toyota Technological Institute, 2-12-1 Hisakata, Tenpaku-ku, Nagoya 468-8511 (Japan)

    2014-12-14

    A Si etching process has been investigated with reactive neutral beams (NBs) extracted using a low acceleration voltage of less than 100 V from CF{sub 4} and Ar mixed plasmas. The etched Si profile shows that the etching process is predominantly anisotropic. The reactive NB has a constant Si etching rate in the acceleration voltage range from 20 V to 80 V. It is considered that low-energy NBs can trigger Si etching because F radicals adsorb onto the Si surface and weaken Si–Si bonds. The etching rate per unit beam flux is 33 times higher than that with Ar NB. These results show that the low-energy reactive NB is useful for damage-free high speed Si etching.

  19. Novel thermal annealing methodology for permanent tuning polymer optical fiber Bragg gratings to longer wavelengths.

    Science.gov (United States)

    Pospori, A; Marques, C A F; Sagias, G; Lamela-Rivera, H; Webb, D J

    2018-01-22

    The Bragg wavelength of a polymer optical fiber Bragg grating can be permanently shifted by utilizing the thermal annealing method. In all the reported fiber annealing cases, the authors were able to tune the Bragg wavelength only to shorter wavelengths, since the polymer fiber shrinks in length during the annealing process. This article demonstrates a novel thermal annealing methodology for permanently tuning polymer optical fiber Bragg gratings to any desirable spectral position, including longer wavelengths. Stretching the polymer optical fiber during the annealing process, the period of Bragg grating, which is directly related with the Bragg wavelength, can become permanently longer. The methodology presented in this article can be used to multiplex polymer optical fiber Bragg gratings at any desirable spectral position utilizing only one phase-mask for their photo-inscription, reducing thus their fabrication cost in an industrial setting.

  20. Effect of Phosphoric Acid Pre-etching on Fatigue Limits of Self-etching Adhesives.

    Science.gov (United States)

    Takamizawa, T; Barkmeier, W W; Tsujimoto, A; Scheidel, D D; Erickson, R L; Latta, M A; Miyazaki, M

    2015-01-01

    The purpose of this study was to use shear bond strength (SBS) and shear fatigue limit (SFL) testing to determine the effect of phosphoric acid pre-etching of enamel and dentin prior to application of self-etch adhesives for bonding resin composite to these substrates. Three self-etch adhesives--1) G- ænial Bond (GC Corporation, Tokyo, Japan); 2) OptiBond XTR (Kerr Corp, Orange, CA, USA); and 3) Scotchbond Universal (3M ESPE Dental Products, St Paul, MN, USA)--were used to bond Z100 Restorative resin composite to enamel and dentin surfaces. A stainless-steel metal ring with an inner diameter of 2.4 mm was used to bond the resin composite to flat-ground (4000 grit) tooth surfaces for determination of both SBS and SFL. Fifteen specimens each were used to determine initial SBS to human enamel/dentin, with and without pre-etching with a 35% phosphoric acid (Ultra-Etch, Ultradent Products Inc, South Jordan, UT, USA) for 15 seconds prior to the application of the adhesives. A staircase method of fatigue testing (25 specimens for each test) was then used to determine the SFL of resin composite bonded to enamel/dentin using a frequency of 10 Hz for 50,000 cycles or until failure occurred. A two-way analysis of variance and Tukey post hoc test were used for analysis of SBS data, and a modified t-test with Bonferroni correction was used for the SFL data. Scanning electron microscopy was used to examine the area of the bonded restorative/tooth interface. For all three adhesive systems, phosphoric acid pre-etching of enamel demonstrated significantly higher (padhesives clearly demonstrated different tendencies between enamel and dentin. The effect of using phosphoric acid, prior to the application of the self-etching adhesives, on SBS and SFL was dependent on the adhesive material and tooth substrate and should be carefully considered in clinical situations.

  1. Dry storage

    International Nuclear Information System (INIS)

    Arnott, Don.

    1985-01-01

    The environmental movement has consistently argued against disposal of nuclear waste. Reasons include its irretrievability in the event of leakage, the implication that reprocessing will continue and the legitimacy attached to an expanding nuclear programme. But there is an alternative. The author here sets out the background and a possible future direction of a campaign based on a call for dry storage. (author)

  2. Wafer scale oblique angle plasma etching

    Science.gov (United States)

    Burckel, David Bruce; Jarecki, Jr., Robert L.; Finnegan, Patrick Sean

    2017-05-23

    Wafer scale oblique angle etching of a semiconductor substrate is performed in a conventional plasma etch chamber by using a fixture that supports a multiple number of separate Faraday cages. Each cage is formed to include an angled grid surface and is positioned such that it will be positioned over a separate one of the die locations on the wafer surface when the fixture is placed over the wafer. The presence of the Faraday cages influences the local electric field surrounding each wafer die, re-shaping the local field to be disposed in alignment with the angled grid surface. The re-shaped plasma causes the reactive ions to follow a linear trajectory through the plasma sheath and angled grid surface, ultimately impinging the wafer surface at an angle. The selected geometry of the Faraday cage angled grid surface thus determines the angle at with the reactive ions will impinge the wafer.

  3. Etching of glass microchips with supercritical water

    Czech Academy of Sciences Publication Activity Database

    Karásek, Pavel; Grym, Jakub; Roth, Michal; Planeta, Josef; Foret, František

    2015-01-01

    Roč. 15, č. 1 (2015), s. 311-318 ISSN 1473-0197 R&D Projects: GA ČR(CZ) GAP106/12/0522; GA ČR(CZ) GBP206/12/G014; GA MŠk(CZ) EE2.3.20.0182 Institutional support: RVO:68081715 Keywords : glass microchips * channel etching * supercritical water Subject RIV: CB - Analytical Chemistry, Separation Impact factor: 5.586, year: 2015

  4. A study on etching of UO2, Co, and Mo surface with R.F. plasma using CF4 and O2

    International Nuclear Information System (INIS)

    Kim, Yong Soo; Seo, Yong Dae

    2003-01-01

    Recently dry decontamination/surface-cleaning technology using plasma etching has been focused in the nuclear industry. In this study, the applicability of this new dry processing technique are experimentally investigated by examining the etching reaction of UO 2 , Co, and Mo in r.f. plasma with the etchant gas of CF 4 /O 2 mixture. UO 2 is chosen as a representing material for uranium and TRU (TRans-Uranic) compounds while metallic Co and Mo are selected because they are the principal contaminants in the used metallic nuclear components such as valves and pipes made of stainless steel or Inconel. Results show that in all cases maximum etching rate is achieved when the mole fraction of O 2 in CF 4 /O 2 mixture gas is 20%, regardless of temperature and r.f. power. In case of UO 2 , the highest etching reaction rate is greater than 1000 monolayers/min. at 370 .deg. C under 150 W r.f. power which is equivalent to 0.4 μm/min. As for Co, etching reaction begins to take place significantly when the temperature exceeds 350 .deg. C. Maximum etching rate achieved at 380 .deg. C is 0.06 μm/min. Mo etching reaction takes place vigorously even at relatively low temperature and the reaction rate increases drastically with increasing temperature. Highest etching rate at 380 .deg. C is 1.9 μm /min. According to OES (Optical Emission Spectroscopy) and AES (Auger Electron Spectroscopy) analysis, primary reaction seems to be a fluorination reaction, but carbonyl compound formation reaction may assist the dominant reaction, especially in case of Co and Mo. Through this basic study, the feasibility and the applicability of plasma decontamination technique are demonstrated

  5. GaN MOSFET with Boron Trichloride-Based Dry Recess Process

    International Nuclear Information System (INIS)

    Jiang, Y; Wang, Q P; Tamai, K; Ao, J P; Ohno, Y; Miyashita, T; Motoyama, S; Wang, D J

    2013-01-01

    The dry recessed-gate GaN metal-oxide-semiconductor field-effect transistors (MOSFETs) on AlGaN/GaN heterostructure using boron trichloride (BCl 3 ) as etching gas were fabricated and characterized. Etching with different etching power was conducted. Devices with silicon tetrachloride (SiCl 4 ) etching gas were also prepared for comparison. Field-effect mobility and interface state density were extracted from current-voltage (I-V) characteristics. GaN MOSFETs on AlGaN/GaN heterostructure with BCl 3 based dry recess achieved a high maximum electron mobility of 141.5 cm 2 V −1 s −1 and a low interface state density.

  6. Predicting synergy in atomic layer etching

    Energy Technology Data Exchange (ETDEWEB)

    Kanarik, Keren J. [Lam Research Corp., Fremont, CA (United States); Tan, Samantha [Lam Research Corp., Fremont, CA (United States); Yang, Wenbing [Lam Research Corp., Fremont, CA (United States); Kim, Taeseung [Lam Research Corp., Fremont, CA (United States); Lill, Thorsten [Lam Research Corp., Fremont, CA (United States); Kabansky, Alexander [Lam Research Corp., Fremont, CA (United States); Hudson, Eric A. [Lam Research Corp., Fremont, CA (United States); Ohba, Tomihito [Lam Research Corp., Fremont, CA (United States); Nojiri, Kazuo [Lam Research Corp., Fremont, CA (United States); Yu, Jengyi [Lam Research Corp., Fremont, CA (United States); Wise, Rich [Lam Research Corp., Fremont, CA (United States); Berry, Ivan L. [Lam Research Corp., Fremont, CA (United States); Pan, Yang [Lam Research Corp., Fremont, CA (United States); Marks, Jeffrey [Lam Research Corp., Fremont, CA (United States); Gottscho, Richard A. [Lam Research Corp., Fremont, CA (United States)

    2017-03-27

    Atomic layer etching (ALE) is a multistep process used today in manufacturing for removing ultrathin layers of material. In this article, the authors report on ALE of Si, Ge, C, W, GaN, and SiO2 using a directional (anisotropic) plasma-enhanced approach. The authors analyze these systems by defining an “ALE synergy” parameter which quantifies the degree to which a process approaches the ideal ALE regime. This parameter is inspired by the ion-neutral synergy concept introduced in the 1979 paper by Coburn and Winters. ALE synergy is related to the energetics of underlying surface interactions and is understood in terms of energy criteria for the energy barriers involved in the reactions. Synergistic behavior is observed for all of the systems studied, with each exhibiting behavior unique to the reactant–material combination. By systematically studying atomic layer etching of a group of materials, the authors show that ALE synergy scales with the surface binding energy of the bulk material. This insight explains why some materials are more or less amenable to the directional ALE approach. Furthermore, they conclude that ALE is both simpler to understand than conventional plasma etch processing and is applicable to metals, semiconductors, and dielectrics.

  7. Laser etching of polymer masked leadframes

    Science.gov (United States)

    Ho, C. K.; Man, H. C.; Yue, T. M.; Yuen, C. W.

    1997-02-01

    A typical electroplating production line for the deposition of silver pattern on copper leadframes in the semiconductor industry involves twenty to twenty five steps of cleaning, pickling, plating, stripping etc. This complex production process occupies large floor space and has also a number of problems such as difficulty in the production of rubber masks and alignment, generation of toxic fumes, high cost of water consumption and sometimes uncertainty on the cleanliness of the surfaces to be plated. A novel laser patterning process is proposed in this paper which can replace many steps in the existing electroplating line. The proposed process involves the application of high speed laser etching techniques on leadframes which were protected with polymer coating. The desired pattern for silver electroplating is produced by laser ablation of the polymer coating. Excimer laser was found to be most effective for this process as it can expose a pattern of clean copper substrate which can be silver plated successfully. Previous working of Nd:YAG laser ablation showed that 1.06 μm radiation was not suitable for this etching process because a thin organic and transparent film remained on the laser etched region. The effect of excimer pulse frequency and energy density upon the removal rate of the polymer coating was studied.

  8. Shapes of agglomerates in plasma etching reactors

    International Nuclear Information System (INIS)

    Huang, F.Y.; Kushner, M.J.

    1997-01-01

    Dust particle contamination of wafers in reactive ion etching (RIE) plasma tools is a continuing concern in the microelectronics industry. It is common to find that particles collected on surfaces or downstream of the etch chamber are agglomerates of smaller monodisperse spherical particles. The shapes of the agglomerates vary from compact, high fractal dimension structures to filamentary, low fractal dimension structures. These shapes are important with respect to the transport of particles in RIE tools under the influence electrostatic and ion drag forces, and the possible generation of polarization forces. A molecular dynamics simulation has been developed to investigate the shapes of agglomerates in plasma etching reactors. We find that filamentary, low fractal dimension structures are generally produced by smaller (<100s nm) particles in low powered plasmas where the kinetic energy of primary particles is insufficient to overcome the larger Coulomb repulsion of a compact agglomerate. This is analogous to the diffusive regime in neutral agglomeration. Large particles in high powered plasmas generally produce compact agglomerates of high fractal dimension, analogous to ballistic agglomeration of neutrals. copyright 1997 American Institute of Physics

  9. Ionoacoustic characterization of the proton Bragg peak with submillimeter accuracy

    Energy Technology Data Exchange (ETDEWEB)

    Assmann, W., E-mail: walter.assmann@lmu.de; Reinhardt, S.; Lehrack, S.; Edlich, A.; Thirolf, P. G.; Parodi, K. [Department for Medical Physics, Ludwig-Maximilians-Universität München, Am Coulombwall 1, Garching 85748 (Germany); Kellnberger, S.; Omar, M.; Ntziachristos, V. [Institute for Biological and Medical Imaging, Technische Universität München and Helmholtz Zentrum München, Ingolstädter Landstrasse 1, Neuherberg 85764 (Germany); Moser, M.; Dollinger, G. [Institute for Applied Physics and Measurement Technology, Universität der Bundeswehr, Werner-Heisenberg-Weg 39, Neubiberg 85577 (Germany)

    2015-02-15

    Purpose: Range verification in ion beam therapy relies to date on nuclear imaging techniques which require complex and costly detector systems. A different approach is the detection of thermoacoustic signals that are generated due to localized energy loss of ion beams in tissue (ionoacoustics). Aim of this work was to study experimentally the achievable position resolution of ionoacoustics under idealized conditions using high frequency ultrasonic transducers and a specifically selected probing beam. Methods: A water phantom was irradiated by a pulsed 20 MeV proton beam with varying pulse intensity and length. The acoustic signal of single proton pulses was measured by different PZT-based ultrasound detectors (3.5 and 10 MHz central frequencies). The proton dose distribution in water was calculated by Geant4 and used as input for simulation of the generated acoustic wave by the matlab toolbox k-WAVE. Results: In measurements from this study, a clear signal of the Bragg peak was observed for an energy deposition as low as 10{sup 12} eV. The signal amplitude showed a linear increase with particle number per pulse and thus, dose. Bragg peak position measurements were reproducible within ±30 μm and agreed with Geant4 simulations to better than 100 μm. The ionoacoustic signal pattern allowed for a detailed analysis of the Bragg peak and could be well reproduced by k-WAVE simulations. Conclusions: The authors have studied the ionoacoustic signal of the Bragg peak in experiments using a 20 MeV proton beam with its correspondingly localized energy deposition, demonstrating submillimeter position resolution and providing a deep insight in the correlation between the acoustic signal and Bragg peak shape. These results, together with earlier experiments and new simulations (including the results in this study) at higher energies, suggest ionoacoustics as a technique for range verification in particle therapy at locations, where the tumor can be localized by ultrasound

  10. Transmission-enabled fiber Fabry-Perot cavity based on a deeply etched slotted micromirror.

    Science.gov (United States)

    Othman, Muhammad A; Sabry, Yasser M; Sadek, Mohamed; Nassar, Ismail M; Khalil, Diaa A

    2018-06-01

    In this work, we report the analysis, fabrication, and characterization of an optical cavity built using a Bragg-coated fiber (BCF) mirror and a metal-coated microelectromechanical systems (MEMS) slotted micromirror, where the latter allows transmission output from the cavity. Theoretical modeling, using Fourier optics analysis for the cavity response based on tracing the propagation of light back and forth between the mirrors, is presented. Detailed simulation analysis is carried out for the spectral response of the cavity under different design conditions. MEMS chips of the slotted micromirror are fabricated using deep reactive ion etching of a silicon-on-insulator substrate with different device-etching depths of 150 μm and 80 μm with aluminum and gold metal coating, respectively. The cavity is characterized as an optical filter using a BCF with reflectivity that is larger than 95% in a 300 nm range across the E-band and the L-band. Versatile filter characteristics were obtained for different values of the MEMS micromirror slit width and cavity length. A free spectral range (FSR) of about 33 nm and a quality factor of about 196 were obtained for a 5.5 μm width aluminum slit, while an FSR of about 148 nm and a quality factor of about 148 were obtained for a 1.5 μm width gold slit. The presented structure opens the door for wide spectral response transmission-type MEMS filters.

  11. Investigations on birefringence effects in polymer optical fiber Bragg gratings

    DEFF Research Database (Denmark)

    Hu, Xiaolian; Saez-Rodriguez, D.; Bang, Ole

    2014-01-01

    Step-index polymer optical fiber Bragg gratings (POFBGs) and microstructured polymer optical fiber Bragg gratings (mPOFBGs) present several attractive features, especially for sensing purposes. In comparison to FBGs written in silica fibers, they are more sensitive to temperature and pressure...... because of the larger thermo-optic coefficient and smaller Young's modulus of polymer materials. (M)POFBGs are most often photowritten in poly(methylmethacrylate) (PMMA) materials using a continuous-wave 325 nm HeCd laser. For the first time to the best of our knowledge, we study photoinduced...... birefringence effects in (m)POFBGs. To achieve this, highly reflective gratings were inscribed with the phase mask technique. They were then monitored in transmission with polarized light. For this, (m)POF sections a few cm in length containing the gratings were glued to angled silica fibers. Polarization...

  12. Magneto-Optic Field Coupling in Optical Fiber Bragg Gratings

    Science.gov (United States)

    Carman, Gregory P. (Inventor); Mohanchandra, Panduranga K. (Inventor); Emmons, Michael C. (Inventor); Richards, William Lance (Inventor)

    2016-01-01

    The invention is a magneto-optic coupled magnetic sensor that comprises a standard optical fiber Bragg grating system. The system includes an optical fiber with at least one Bragg grating therein. The optical fiber has at least an inner core and a cladding that surrounds the inner core. The optical fiber is part of an optical system that includes an interrogation device that provides a light wave through the optical fiber and a system to determine the change in the index of refraction of the optical fiber. The cladding of the optical fiber comprises at least a portion of which is made up of ferromagnetic particles so that the ferromagnetic particles are subject to the light wave provided by the interrogation system. When a magnetic field is present, the ferromagnetic particles change the optical properties of the sensor directly.

  13. Fiber Bragg Grating vibration sensor with DFB laser diode

    Science.gov (United States)

    Siska, Petr; Brozovic, Martin; Cubik, Jakub; Kepak, Stanislav; Vitasek, Jan; Koudelka, Petr; Latal, Jan; Vasinek, Vladimir

    2012-01-01

    The Fiber Bragg Grating (FBG) sensors are nowadays used in many applications. Thanks to its quite big sensitivity to a surrounding environment, they can be used for sensing of temperature, strain, vibration or pressure. A fiber Bragg grating vibration sensor, which is interrogated by a distributed feedback laser diode (DFB) is demonstrated in this article. The system is based on the intensity modulation of the narrow spectral bandwidth of the DFB laser, when the reflection spectrum of the FBG sensor is shifted due to the strain that is applied on it in form of vibrations caused by acoustic wave pressure from loud speaker. The sensor's response in frequency domain and strain is measured; also the factor of sensor pre-strain impact on its sensitivity is discussed.

  14. Planar Bragg Grating Sensors—Fabrication and Applications: A Review

    Directory of Open Access Journals (Sweden)

    I. J. G. Sparrow

    2009-01-01

    Full Text Available We discuss the background and technology of planar Bragg grating sensors, reviewing their development and describing the latest developments. The physical operating principles are discussed, relating device operation to user requirements. Recent performance of such devices includes a planar Bragg grating sensor design which allows refractive index resolution of 1.9×10−6 RIU and temperature resolution of 0.03∘C. This sensor design is incorporated into industrialised applications allowing the sensor to be used for real time sensing in intrinsically safe, high-pressure pipelines, or for insertion probe applications such as fermentation. Initial data demonstrating the ability to identify solvents and monitor long term industrial processes is presented. A brief review of the technology used to fabricate the sensors is given along with examples of the flexibility afforded by the technique.

  15. Three-dimensional Bragg diffraction in growth-disordered opals

    Science.gov (United States)

    Baryshev, A. V.; Kaplyanskii, Alexander A.; Kosobukin, Vladimir A.; Limonov, M. F.; Samusev, K. B.; Usvyat, D. E.

    2003-06-01

    After artificial opals as well as opal-based infilled and inverted composites are considered to be promising representatives of photonic crystal materials. Earlier, photonic stop gaps in opals were studied mainly in transmission or specular reflection geometries corresponding to "one-dimensional" Bragg diffraction. On the contrary, this work was aimed at observing the typical patterns of optical Bragg diffraction in which phenomenon opal crystal structure acts as a three-dimensional diffraction grating. Although our experiments were performed for artificial opals possessing unavoidable imperfections a well-pronounced diffraction peaks were observed characteristic of a crystal structure. Each of the diffraction maxima reveals a photonic stop gap in the specified direction, while the spectral width of the peak is a measure of the photonic stop gap width.

  16. Reduction of Bragg-grating-induced coupling to cladding modes

    DEFF Research Database (Denmark)

    Berendt, Martin Ole; Bjarklev, Anders Overgaard; Soccolich, C.E.

    1999-01-01

    gratings in a depressed-cladding fiber are compared with simulations. The model gives good agreement with the measured transmission spectrum and accounts for the pronounced coupling to asymmetrical cladding modes, even when the grating is written with the smallest possible blaze. The asymmetry causing...... this is accounted for by the unavoidable attenuation of the UV light. It is found for the considered fiber designs that a high numerical-aperture fiber increases the spectral separation between the Bragg resonance and the onset of cladding-mode losses. A depressed-cladding fiber reduces the coupling strength......We discuss fiber designs that have been suggested for the reduction of Bragg-grating induced coupling to cladding modes. The discussion is based on a theoretical approach that includes the effect of asymmetry in the UV-induced index grating, made by UV-side writing. Experimental results from...

  17. Localized topological states in Bragg multihelicoidal fibers with twist defects

    Science.gov (United States)

    Alexeyev, C. N.; Lapin, B. P.; Milione, G.; Yavorsky, M. A.

    2016-06-01

    We have studied the influence of a twist defect in multihelicoidal Bragg fibers on the emerging of localized defect modes. We have shown that if such a fiber is excited with a Gaussian beam this leads to the appearance of a defect-localized topological state, whose topological charge coincides with the order of rotational symmetry of the fiber's refractive index. We have shown that this effect has a pronounced crossover behavior. We have also formulated a principle of creating the systems that can nestle defect-localized topologically charged modes. According to this principle, such systems have to possess topological activity, that is, the ability to change the topological charge of the incoming field, and operate in the Bragg regime.

  18. Determination of etching parameters for pulsed XeF2 etching of silicon using chamber pressure data

    Science.gov (United States)

    Sarkar, Dipta; Baboly, M. G.; Elahi, M. M.; Abbas, K.; Butner, J.; Piñon, D.; Ward, T. L.; Hieber, Tyler; Schuberth, Austin; Leseman, Z. C.

    2018-04-01

    A technique is presented for determination of the depletion of the etchant, etched depth, and instantaneous etch rate for Si etching with XeF2 in a pulsed etching system in real time. The only experimental data required is the pressure data collected temporally. Coupling the pressure data with the knowledge of the chemical reactions allows for the determination of the etching parameters of interest. Using this technique, it is revealed that pulsed etching processes are nonlinear, with the initial etch rate being the highest and monotonically decreasing as the etchant is depleted. With the pulsed etching system introduced in this paper, the highest instantaneous etch rate of silicon was recorded to be 19.5 µm min-1 for an initial pressure of 1.2 Torr for XeF2. Additionally, the same data is used to determine the rate constant for the reaction of XeF2 with Si; the reaction is determined to be second order in nature. The effect of varying the exposed surface area of Si as well as the effect that pressure has on the instantaneous etch rate as a function of time is shown applying the same technique. As a proof of concept, an AlN resonator is released using XeF2 pulses to remove a sacrificial poly-Si layer.

  19. In vitro bonding effectiveness of three different one-step self-etch adhesives with additional enamel etching.

    Science.gov (United States)

    Batra, Charu; Nagpal, Rajni; Tyagi, Shashi Prabha; Singh, Udai Pratap; Manuja, Naveen

    2014-08-01

    To evaluate the effect of additional enamel etching on the shear bond strength of three self-etch adhesives. Class II box type cavities were made on extracted human molars. Teeth were randomly divided into one control group of etch and rinse adhesive and three test groups of self-etch adhesives (Clearfil S3 Bond, Futurabond NR, Xeno V). The teeth in the control group (n = 10) were treated with Adper™ Single Bond 2. The three test groups were further divided into two subgroups (n = 10): (i) self-etch adhesive was applied as per the manufacturer's instructions; (ii) additional etching of enamel surfaces was done prior to the application of self-etch adhesives. All cavities were restored with Filtek Z250. After thermocycling, shear bond strength was evaluated using a Universal testing machine. Data were analyzed using anova independent sample's 't' test and Dunnett's test. The failure modes were evaluated with a stereomicroscope at a magnification of 10×. Additional phosphoric acid etching of the enamel surface prior to the application of the adhesive system significantly increased the shear bond strength of all the examined self-etch adhesives. Additional phosphoric acid etching of enamel surface significantly improved the shear bond strength. © 2013 Wiley Publishing Asia Pty Ltd.

  20. Fibre Bragg grating and no-core fibre sensors

    CERN Document Server

    Daud, Suzairi

    2018-01-01

    This book focuses on the development and set-up of fibre Bragg grating (FBG) and no-core fibre (NCF) sensors. It discusses the properties of the sensors and modelling of the resulting devices, which include electronic, optoelectronic, photovoltaic, and spintronic devices. In addition to providing detailed explanations of the properties of FBG and NCF sensors, it features a wealth of instructive illustrations and tables, helping to visualize the respective devices’ functions.

  1. Smart architecture for stable multipoint fiber Bragg grating sensor system

    Science.gov (United States)

    Yeh, Chien-Hung; Tsai, Ning; Zhuang, Yuan-Hong; Huang, Tzu-Jung; Chow, Chi-Wai; Chen, Jing-Heng; Liu, Wen-Fung

    2017-12-01

    In this work, we propose and investigate an intelligent fiber Bragg grating (FBG)-based sensor system in which the proposed stabilized and wavelength-tunable single-longitudinal-mode erbium-doped fiber laser can improve the sensing accuracy of wavelength-division-multiplexing multiple FBG sensors in a longer fiber transmission distance. Moreover, we also demonstrate the proposed sensor architecture to enhance the FBG capacity for sensing strain and temperature, simultaneously.

  2. Degradation of the Bragg peak due to inhomogeneities.

    Science.gov (United States)

    Urie, M; Goitein, M; Holley, W R; Chen, G T

    1986-01-01

    The rapid fall-off of dose at the end of range of heavy charged particle beams has the potential in therapeutic applications of sparing critical structures just distal to the target volume. Here we explored the effects of highly inhomogeneous regions on this desirable depth-dose characteristic. The proton depth-dose distribution behind a lucite-air interface parallel to the beam was bimodal, indicating the presence of two groups of protons with different residual ranges, creating a step-like depth-dose distribution at the end of range. The residual ranges became more spread out as the interface was angled at 3 degrees, and still more at 6 degrees, to the direction of the beam. A second experiment showed little significant effect on the distal depth-dose of protons having passed through a mosaic of teflon and lucite. Anatomic studies demonstrated significant effects of complex fine inhomogeneities on the end of range characteristics. Monoenergetic protons passing through the petrous ridges and mastoid air cells in the base of skull showed a dramatic degradation of the distal Bragg peak. In beams with spread out Bragg peaks passing through regions of the base of skull, the distal fall-off from 90 to 20% dose was increased from its nominal 6 to well over 32 mm. Heavy ions showed a corresponding degradation in their ends of range. In the worst case in the base of skull region, a monoenergetic neon beam showed a broadening of the full width at half maximum of the Bragg peak to over 15 mm (compared with 4 mm in a homogeneous unit density medium). A similar effect was found with carbon ions in the abdomen, where the full width at half maximum of the Bragg peak (nominally 5.5 mm) was found to be greater than 25 mm behind gas-soft-tissue interfaces. We address the implications of these data for dose computation with heavy charged particles.

  3. Bragg reflection transmission filters for variable resolution monochromators

    International Nuclear Information System (INIS)

    Chapman, D.

    1989-01-01

    There are various methods for improving the angular and spectral resolution of monochromator and analyzer systems. The novel system described here, though limited to higher x-ray energies (>20keV), is based on a dynamical effect occurring on the transmitted beam with a thin perfect crystal plate set in the Bragg reflection case. In the case of Bragg reflection from a perfect crystal, the incident beam is rapidly attenuated as it penetrates the crystal in the range of reflection. This extinction length is of the order of microns. The attenuation length, which determines the amount of normal transmission through the plate is generally much longer. Thus, in the range of the Bragg reflection the attenuation of the transmitted beam can change by several orders of magnitude with a small change in energy or angle. This thin crystal plate cuts a notch in the transmitted beam with a width equal to its Darwin width, thus acting as a transmission filter. When used in a non-dispersive mode with other monochromator crystals, the filter when set at the Bragg angle will reflect the entire Darwin width of the incident beam and transmit the wings of the incident beam distribution. When the element is offset in angle by some fraction of the Darwin width, the filter becomes useful in adjusting the angular width of the transmitted beam and removing a wing. Used in pairs with a symmetric offset, the filters can be used to continuously adjust the intrinsic angular divergence of the beam with good wing reduction. Instances where such filters may be useful are in improving the angular resolution of a small angle scattering camera. These filters may be added to a Bonse-Hart camera with one pair on the incident beam to reduce the intrinsic beam divergence and a second pair on the analyzer arm to improve the analyzer resolution. 2 refs., 3 Figs

  4. Generalized Bragg-Williams method for 'antiferromagnetic' lattice gases

    International Nuclear Information System (INIS)

    Osorio, R.

    1983-01-01

    The many-sublattice Bragg-Williams approximation of statistical mechanics is applied to the two-dimensional square and triangular lattice-gas models with nearest-neighbor repulsive interactions. Each problem is solved through both the canonical and grand-canonical methods. The present treatment emphasizes the duality between concentration and chemical potential and illustrates the appearance of first- and second -order transitions in each method. (Author) [pt

  5. Developing fiber lasers with Bragg reflectors as deep sea hydrophones

    Directory of Open Access Journals (Sweden)

    F. Sorrentino

    2006-06-01

    Full Text Available The present paper will discuss the work in progress at the Department of Physics of the University of Pisa in collaboration with the IFAC laboratory of CNR in Florence to develop pressure sensors with outstanding sensitivity in the acoustic and ultrasonic ranges. These devices are based on optically-pumped fiber lasers, where the mirrors are Bragg gratings written into the fiber core.

  6. Methods of removal of defects arising at liquid etching of polycrystalline silicon

    Directory of Open Access Journals (Sweden)

    Ivanchykou A. E.

    2008-02-01

    Full Text Available The paper presents a model of generation of defects having the form of spots on the surface of the polycrystalline silicon during processing of semiconductor wafers with hydrofluoric acid based etchant, and a model of removal of such defects in chemical solutions. The authors investigate how the centrifuge speed during drying and the relief of structures, produced on the plate, effect the number of defects. It is shown that there is a possibility to remove defects by chemical treatment in the peroxide-ammonia solutions (PAS and also by sequence of chemical cleaning in Karo mixture, SiO2 etching and treatment in PAS.

  7. Synchrotron radiation focusing by a Bragg--Fresnel lens

    International Nuclear Information System (INIS)

    Aristov, V.V.; Basov, Y.A.; Snigirev, A.A.

    1989-01-01

    Since the discovery of x rays and until the present time the possibilities of their controlling and focusing have been widely discussed. In the hard spectrum region (λ∼1 A) the main focusing schemes are the following: geometrical focusing based on incoherent interaction of wave packets reflected by different regions of bending crystals and coherent (dynamic) focusing performed at the cost of the effect of refraction index angular dispersion near the exact Bragg angle value -θ B . A main disadvantage of geometrical focusing is low spatial resolution (∼0.1 mm) and temperature stability. In the case of coherent focusing a main disadvantage is a narrow angular aperture (∼10 sec. of arc) at spatial resolution (∼1--10 μm). Recently, advances in the development of diffraction physics and microstructuring technology open up possibilities for fabricating effective focusing x-ray optical elements---Bragg--Fresnel lenses (BFL)---with high spatial resolution (∼0.1 μm) at a wide angular aperture and high temperature stability. The present paper describes the main principles of Bragg--Fresnel optics (BFO). It presents the results on the synchrotron experiment and on observation of focusing. In this work the peculiarities of BFL diffraction contrast formation are investigated and image transmission using a BFL is performed. Possibilities of developing x-ray optical schemes of ultrahigh resolution on the basis of BFL elements are also discussed

  8. Mode splitting effect in FEMs with oversized Bragg resonators

    Energy Technology Data Exchange (ETDEWEB)

    Peskov, N. Yu.; Sergeev, A. S. [Institute of Applied Physics Russian Academy of Sciences, Nizhny Novgorod (Russian Federation); Kaminsky, A. K.; Perelstein, E. A.; Sedykh, S. N. [Joint Institute for Nuclear Research, Dubna (Russian Federation); Kuzikov, S. V. [Institute of Applied Physics Russian Academy of Sciences, Nizhny Novgorod (Russian Federation); Nizhegorodsky State University, Nizhny Novgorod (Russian Federation)

    2016-07-15

    Splitting of the fundamental mode in an oversized Bragg resonator with a step of the corrugation phase, which operates over the feedback loop involving the waveguide waves of different transverse structures, was found to be the result of mutual influence of the neighboring zones of the Bragg scattering. Theoretical description of this effect was developed within the framework of the advanced (four-wave) coupled-wave approach. It is shown that mode splitting reduces the selective properties, restricts the output power, and decreases the stability of the narrow-band operating regime in the free-electron maser (FEM) oscillators based on such resonators. The results of the theoretical analysis were confirmed by 3D simulations and “cold” microwave tests. Experimental data on Bragg resonators with different parameters in a 30-GHz FEM are presented. The possibility of reducing the mode splitting by profiling the corrugation parameters is shown. The use of the mode splitting effect for the output power enhancement by passive compression of the double-frequency pulse generated in the FEM with such a resonator is discussed.

  9. Photonic bandgap narrowing in conical hollow core Bragg fibers

    Energy Technology Data Exchange (ETDEWEB)

    Ozturk, Fahri Emre; Yildirim, Adem; Kanik, Mehmet [UNAM-National Nanotechnology Research Center, Bilkent University, 06800 Ankara (Turkey); Institute of Materials Science and Nanotechnology, Bilkent University, 06800 Ankara (Turkey); Bayindir, Mehmet, E-mail: bayindir@nano.org.tr [UNAM-National Nanotechnology Research Center, Bilkent University, 06800 Ankara (Turkey); Institute of Materials Science and Nanotechnology, Bilkent University, 06800 Ankara (Turkey); Department of Physics, Bilkent University, 06800 Ankara (Turkey)

    2014-08-18

    We report the photonic bandgap engineering of Bragg fibers by controlling the thickness profile of the fiber during the thermal drawing. Conical hollow core Bragg fibers were produced by thermal drawing under a rapidly alternating load, which was applied by introducing steep changes to the fiber drawing speed. In conventional cylindrical Bragg fibers, light is guided by omnidirectional reflections from interior dielectric mirrors with a single quarter wave stack period. In conical fibers, the diameter reduction introduced a gradient of the quarter wave stack period along the length of the fiber. Therefore, the light guided within the fiber encountered slightly smaller dielectric layer thicknesses at each reflection, resulting in a progressive blueshift of the reflectance spectrum. As the reflectance spectrum shifts, longer wavelengths of the initial bandgap cease to be omnidirectionally reflected and exit through the cladding, which narrows the photonic bandgap. A narrow transmission bandwidth is particularly desirable in hollow waveguide mid-infrared sensing schemes, where broadband light is coupled to the fiber and the analyte vapor is introduced into the hollow core to measure infrared absorption. We carried out sensing simulations using the absorption spectrum of isopropyl alcohol vapor to demonstrate the importance of narrow bandgap fibers in chemical sensing applications.

  10. A Highly Sensitive Two-Dimensional Inclinometer Based on Two Etched Chirped-Fiber-Grating Arrays †

    Science.gov (United States)

    Chang, Hung-Ying; Chang, Yu-Chung; Liu, Wen-Fung

    2017-01-01

    We present a novel two-dimensional fiber-optic inclinometer with high sensitivity by crisscrossing two etched chirped fiber Bragg gratings (CFBG) arrays. Each array is composed of two symmetrically-arranged CFBGs. By etching away most of the claddings of the CFBGs to expose the evanescent wave, the reflection spectra are highly sensitive to the surrounding index change. When we immerse only part of the CFBG in liquid, the effective index difference induces a superposition peak in the refection spectrum. By interrogating the peak wavelengths of the CFBGs, we can deduce the tilt angle and direction simultaneously. The inclinometer has a resolution of 0.003° in tilt angle measurement and 0.00187 rad in tilt direction measurement. Due to the unique sensing mechanism, the sensor is temperature insensitive. This sensor can be useful in long term continuous monitoring of inclination or in real-time feedback control of tilt angles, especially in harsh environments with violent temperature variation. PMID:29244770

  11. Comparative evaluation of self-etching primers and phosphoric acid effectiveness on composite to enamel bond: an in vitro study.

    Science.gov (United States)

    Patil, Basanagouda S; Rao, Bk Raghavendra; Sharathchandra, Sm; Hegde, Reshma; Kumar, G Vinay

    2013-09-01

    The aim of the present study was to investigate the effectiveness of the one total-etch self-priming adhesive, one two-step self-etching primer adhesive, and one 'all-in-one' self-etching adhesive system on the adhesion of a resin composite to enamel. Thirty-six freshly extracted human mandibular molars were selected for this study. A fat area about 5 mm in diameter was created on the exposed mesial surface of enamel of each tooth by moist grinding with 320, 420 and 600 grit silicon carbide paper. Twelve teeth were randomly assigned into three groups. In group 1, Adper Easy One (3M ESPE), a one step self-etching primer adhesive was applied and light curing unit for 10 seconds. In group 2, Adper SE Plus, a two-step self-etching primer with bottle A containing the aqueous primer and bottle B containing the acidic adhesive was applied and light cured for 10 seconds. Group 3 (control)-etchant 37% phosphoric acid is applied to the surface for 15 seconds and rinsed with water and air dried and adhesive (single bond 2) is applied to the surface and tube is placed and light cured for 20 seconds. Composite material (Z350) was placed in the tube and light cured for 40 seconds in all the groups. Bond strength testing was done using universal testing machine at the enamel-composite interface. The debonded enamel surface was evaluated in stereomicroscope to assess the cohesive, adhesive or mixed fracture. Data was statistically analyzed by one way analysis of variance (ANOVA). Group 1 performed least among all groups with a mean score of 19.46 MPa. Group 2 had a mean score of 25.67 MPa. Group 3 had a mean score of 27.16 MPa. Under the conditions of this in vitro study, the bond strength values of the two-step self-etching primer systems tested were similar to the total-etch. And, one step self-etching primers have lower bond strength compared to the total-etch.

  12. Influence of copper foil polycrystalline structure on graphene anisotropic etching

    Energy Technology Data Exchange (ETDEWEB)

    Sharma, Kamal P. [Department of Frontier Materials, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555 (Japan); Mahyavanshi, Rakesh D. [Department of Physical Science and Engineering, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555 (Japan); Kalita, Golap, E-mail: kalita.golap@nitech.ac.jp [Department of Frontier Materials, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555 (Japan); Department of Physical Science and Engineering, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555 (Japan); Tanemura, Masaki [Department of Frontier Materials, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555 (Japan); Department of Physical Science and Engineering, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555 (Japan)

    2017-01-30

    Graphical abstract: Hexagonal hole formation with anisotropic etching independent of the stripes and wrinkles in the synthesized graphene. We also observed variation in etched pattern of the graphene depending on the base Cu grain orientations, attributing to difference in nucleation and growth process. - Highlights: • Reveal the influence of copper polycrystalline structure on anisotropic etching of graphene. • Hexagonal hole formation with etching is observed to be independent of stripes and wrinkles in graphene. • Variation in etched pattern of graphene depending on the base Cu grain is confirmed. • This finding will help to understand the nature of microscopic etched pattern in graphene. - Abstract: Anisotropic etching of graphene and other two dimensional materials is an important tool to understand the growth process as well as enabling fabrication of various well-defined structures. Here, we reveal the influence of copper foil polycrystalline structure on anisotropic etching process of as-synthesized graphene. Graphene crystals were synthesized on the polycrystalline Cu foil by a low-pressure chemical vapor deposition (LPCVD) system. Microscopic analysis shows difference in shape, size and stripes alignment of graphene crystals with dissimilar nucleation within closure vicinity of neighboring Cu grains. Post-growth etching of such graphene crystals also significantly affected by the crystallographic nature of Cu grains as observed by the field emission scanning electron microscope (FE-SEM) and electron back scattered diffraction (EBSD) analysis. Hexagonal hole formation with anisotropic etching is observed to be independent of the stripes and wrinkles in the synthesized graphene. We also observed variation in etched pattern of the graphene depending on the base Cu grain orientations, attributing to difference in nucleation and growth process. The findings can facilitate to understand the nature of microscopic etched pattern depending on metal

  13. Study on the etched carnelian beads unearthed in China

    Institute of Scientific and Technical Information of China (English)

    Deyun Zhao

    2014-01-01

    Etched carnelian beads originated in the Indus Civilization;this kind of ornaments and its manufacturing techniques were spread to the whole Eurasia Continent.The etched carnelian beads unearthed in China can be classified into four types,the comparisons of which to their foreign counterparts may reveal their different sources and diffusion routes.The etched carnelian beads and their glass imitations unearthed in China had influences to the making of the glass "eye beads" in

  14. Influence of copper foil polycrystalline structure on graphene anisotropic etching

    International Nuclear Information System (INIS)

    Sharma, Kamal P.; Mahyavanshi, Rakesh D.; Kalita, Golap; Tanemura, Masaki

    2017-01-01

    Graphical abstract: Hexagonal hole formation with anisotropic etching independent of the stripes and wrinkles in the synthesized graphene. We also observed variation in etched pattern of the graphene depending on the base Cu grain orientations, attributing to difference in nucleation and growth process. - Highlights: • Reveal the influence of copper polycrystalline structure on anisotropic etching of graphene. • Hexagonal hole formation with etching is observed to be independent of stripes and wrinkles in graphene. • Variation in etched pattern of graphene depending on the base Cu grain is confirmed. • This finding will help to understand the nature of microscopic etched pattern in graphene. - Abstract: Anisotropic etching of graphene and other two dimensional materials is an important tool to understand the growth process as well as enabling fabrication of various well-defined structures. Here, we reveal the influence of copper foil polycrystalline structure on anisotropic etching process of as-synthesized graphene. Graphene crystals were synthesized on the polycrystalline Cu foil by a low-pressure chemical vapor deposition (LPCVD) system. Microscopic analysis shows difference in shape, size and stripes alignment of graphene crystals with dissimilar nucleation within closure vicinity of neighboring Cu grains. Post-growth etching of such graphene crystals also significantly affected by the crystallographic nature of Cu grains as observed by the field emission scanning electron microscope (FE-SEM) and electron back scattered diffraction (EBSD) analysis. Hexagonal hole formation with anisotropic etching is observed to be independent of the stripes and wrinkles in the synthesized graphene. We also observed variation in etched pattern of the graphene depending on the base Cu grain orientations, attributing to difference in nucleation and growth process. The findings can facilitate to understand the nature of microscopic etched pattern depending on metal

  15. Optimize Etching Based Single Mode Fiber Optic Temperature Sensor

    OpenAIRE

    Ajay Kumar; Dr. Pramod Kumar

    2014-01-01

    This paper presents a description of etching process for fabrication single mode optical fiber sensors. The process of fabrication demonstrates an optimized etching based method to fabricate single mode fiber (SMF) optic sensors in specified constant time and temperature. We propose a single mode optical fiber based temperature sensor, where the temperature sensing region is obtained by etching its cladding diameter over small length to a critical value. It is observed that th...

  16. Energy dispersive X-ray fluorescence analysis with Bragg polarized Mo radiation. Energiedispersive Roentgenfluoreszenzanalyse mit Bragg-polarisierter Mo Strahlung

    Energy Technology Data Exchange (ETDEWEB)

    Gloeckl, H

    1983-01-01

    The aim of introducing energy dispersive analysis into X-ray fluorescence analysis is to suppress background from the Bremsstrahlung spectrum and the characteristic radiation without an undue reduction of the signal. The variant under consideration uses linearly polarization radiation obtained after a Bragg reflection,under delta = 90/sup 0/. In an introductory part, Bragg reflection, fluorescence and strong radiation are considered quantitatively with respect to counting statistics and detection limits. In the experimental part two combinations are describe, of a Ta crystal with a Cr tube and of a Mo crystal with a Mo tube. Details of adjustment, sample preparation and calibration and detection limits are given. The pros and cons of the Ta/Cr and the Mo/Mo are contrasted and proposals for further improvements are given.

  17. Evaluation of different polymers for fast neutron personnel dosimetry using electrochemical etching

    International Nuclear Information System (INIS)

    Gammage, R.B.; Cotter, S.J.

    1977-01-01

    There is considerable optimism for the enhancement by electrochemical etching of fast neutron-induced recoil tracks in polycarbonate for the purpose of personnel dosimetry. The threshold energy, however, is rather high. A desirable improvement would be to lower this energy below 1 MeV. With this objective in mind, we have commenced an investigation of cellulose acetate, triacetate, and acetobutyrate in addition to polycarbonate. These cellulose derivatives are chemically more reactive and physically weaker than polycarbonate. It might, therefore, be possible to initiate the electrochemical amplification at the sites of shorter recoil atom damage tracks than is possible with polycarbonate. Some characteristics important for electrochemically etching in aqueous electrolytes are listed. Chemical etching is combined with treeing, an electrical breakdown process that starts when the dielectric strength is exceeded. These mechanical and electrical properties pertain to the dry plastics. The absorption of water molecules and electrolyte ions will cause these values to be reduced. Results and conclusions of the study are presented

  18. Effects of etching time on enamel bond strengths.

    Science.gov (United States)

    Triolo, P T; Swift, E J; Mudgil, A; Levine, A

    1993-12-01

    This study evaluated the effects of etching time on bond strengths of composite to enamel. Proximal surfaces of extracted molars were etched with either a conventional etchant (35% phosphoric acid) or one of two dentin/enamel conditioners, 10% maleic acid (Scotchbond Multi-Purpose Etchant), or a solution of oxalic acid, aluminum nitrate, and glycine (Gluma 1 & 2 Conditioner). Each agent was applied for 15, 30, or 60 seconds. Specimens etched with 35% phosphoric acid had the highest mean bond strengths at each etching time. At the manufacturer's recommended application times, the other two agents gave significantly lower shear bond strengths than phosphoric acid.

  19. Optimization of some electrochemical etching parameters for cellulose derivatives

    International Nuclear Information System (INIS)

    Chowdhury, Annis; Gammage, R.B.

    1978-01-01

    Electrochemical etching of fast neutron induced recoil particle tracks in cellulose derivatives and other polymers provides an inexpensive and sensitive means of fast neutron personnel dosimetry. A study of the shape, clarity, and size of the tracks in Transilwrap polycarbonate indicated that the optimum normality of the potassium hydroxide etching solution is 9 N. Optimizations have also been attempted for cellulose nitrate, triacetate, and acetobutyrate with respect to such electrochemical etching parameters as frequency, voltage gradient, and concentration of the etching solution. The measurement of differential leakage currents between the undamaged and the neutron damaged foils aided in the selection of optimum frequencies. (author)

  20. 3D memory: etch is the new litho

    Science.gov (United States)

    Petti, Christopher

    2018-03-01

    This paper discusses the process challenges and limitations for 3D NAND processes, focusing on vertical 3D architectures. The effect of deep memory hole etches on die cost is calculated, with die cost showing a minimum at a given number of layers because of aspect-ratio dependent etch effects. Techniques to mitigate these etch effects are summarized, as are other etch issues, such as bowing and twisting. Metal replacement gate processes and their challenges are also described. Lastly, future directions of vertical 3D NAND technologies are explored.

  1. Preparation of Track Etch Membrane Filters Using Polystyrene Film

    International Nuclear Information System (INIS)

    Kaewsaenee, Jerawut; Ratanatongchai, Wichian; Supaphol, Pitt; Visal-athaphand, Pinpan

    2007-08-01

    Full text: Polystyrene nuclear track etch membrane filters was prepared by exposed 13 .m thin film polystyrene with fission fragment. Nuclear latent track was enlarged to through hole on the film by etching with 80 o C 40% H 2 SO 4 with K 2 Cr 2 O 7 solution for 6-10 hour. The hole size was depend on concentration of etching solution and etching time with 1.3-3.4 .m hole diameter. The flow rate test of water was 0.79-1.56 mm cm-2 min-1 at 109.8-113.7 kPa pressure

  2. Ion-beam etching of ramps in thin film heterostructures

    International Nuclear Information System (INIS)

    Mozhaev, P. B.; Mozhaeva, Ju. E.; Komissinskii, P. V.

    2002-01-01

    Ion-beam patterning of thin films and heterostructures is one of the most common processes of fabrication of thin film devices and structures. 'Directed' nature of ion-beam etching provides a possibility to form certain profiles on the films surface, like shallow ramps, when etching is performed at some inclination angle. A simple geometrical model is presented, describing the formation of a ramp as a shadow of the mask on the film surface. Good agreement with the experiment can be obtained if the mask etching is taken into account. The etching at the opposite direction ('high-angle etching') also can be satisfactory described by the model. The profile of the slope - positive or negative curvature, pits near the end of the ramp - is discussed as a function of the etch rate dependence on the incidence angle. Such etch rate dependences for some often used materials were measured. An area of instability of the resulting ramp shape is found for the 'high-angle etching'. The model is compared with the experimental data reported by other groups. Finally ion-beam etching of a rotating sample at non-normal incidence is discussed, the results are compared with experimental data. (Authors)

  3. Chemical etching of fission tracks in ethylene-tetrafluoroethylene copolymer

    International Nuclear Information System (INIS)

    Komaki, Y.; Tsujimura, S.; Seguchi, T.

    1979-01-01

    The chemical etching of fission tracks in ethylene-tetrafluoroethylene copolymer was studied. Etched holes 3000 to 4000 A in diameter were recognized by electron microscopy for a film bombarded by fission fragments in oxygen and etched in a 12N sodium hydroxide solution at 125 0 C. The radial etching rate at 125 0 C was 6 to 8 A/hr, which is less than 17 A/hr for polyvinylidene fluoride in the same sodium hydroxide concentration at 85 0 C. The smaller rate is a reflection of the larger chemical resistivity of ethylene-tetrafluoroethylene copolymer than polyvinylidene fluoride. (author)

  4. Influence of asymmetric etching on ion track shapes in polycarbonate

    International Nuclear Information System (INIS)

    Clochard, M.-C.; Wade, T.L.; Wegrowe, J.-E.; Balanzat, E.

    2007-01-01

    By combining low-energy ion irradiation with asymmetric etching, conical nanopores of controlled geometry can be etched in polycarbonate (PC). Cone bases vary from 0.5 to 1 μm. Top diameters down to 17 nm are reached. When etching from one side, the pH on the other side (bathed in neutral or acidic buffer) was monitored. Etching temperature ranged from 65 deg. C to 80 deg. C. Pore shape characterization was achieved by electro replication combined with SEM observation. The tip shape depended on whether an acidic buffer was used or not on the stopped side

  5. Modeling of the angular dependence of plasma etching

    International Nuclear Information System (INIS)

    Guo Wei; Sawin, Herbert H.

    2009-01-01

    An understanding of the angular dependence of etching yield is essential to investigate the origins of sidewall roughness during plasma etching. In this article the angular dependence of polysilicon etching in Cl 2 plasma was modeled as a combination of individual angular-dependent etching yields for ion-initiated processes including physical sputtering, ion-induced etching, vacancy generation, and removal. The modeled etching yield exhibited a maximum at ∼60 degree sign off-normal ion angle at low flux ratio, indicative of physical sputtering. It transformed to the angular dependence of ion-induced etching with the increase in the neutral-to-ion flux ratio. Good agreement between the modeling and the experiments was achieved for various flux ratios and ion energies. The variation of etching yield in response to the ion angle was incorporated in the three-dimensional profile simulation and qualitative agreement was obtained. The surface composition was calculated and compared to x-ray photoelectron spectroscopy (XPS) analysis. The modeling indicated a Cl areal density of 3x10 15 atoms/cm 2 on the surface that is close to the value determined by the XPS analysis. The response of Cl fraction to ion energy and flux ratio was modeled and correlated with the etching yields. The complete mixing-layer kinetics model with the angular dependence effect will be used for quantitative surface roughening analysis using a profile simulator in future work.

  6. Symphony and cacophony in ion track etching: how to control etching results

    Czech Academy of Sciences Publication Activity Database

    Fink, Dietmar; Kiv, A.; Cruz, S. A.; Munoz, G. H.; Vacík, Jiří

    2012-01-01

    Roč. 167, č. 7 (2012), s. 527-540 ISSN 1042-0150 R&D Projects: GA AV ČR IAA200480702 Institutional support: RVO:61389005 Keywords : ion track s * polymers * etching * diodes * resistances Subject RIV: BG - Nuclear, Atomic and Molecular Physics, Colliders Impact factor: 0.502, year: 2012

  7. In vitro evaluation of microleakage around orthodontic brackets using laser etching and Acid etching methods.

    Directory of Open Access Journals (Sweden)

    Mohammad Hossein Toodehzaeim

    2014-06-01

    Full Text Available path of microleakage between the enamel and adhesive potentially allows microbial ingress that may consequently cause enamel decalcification. The aim of this study was to compare microleakage of brackets bonded either by laser or acid etching techniques.The specimens were 33 extracted premolars that were divided into three groups as the acid etching group (group 1, laser etching with Er:YAG at 100 mJ and 15 Hz for 15s (group 2, and laser etching with Er:YAG at 140 mJ and 15 Hz for 15s (group 3. After photo polymerization, the teeth were subjected to 500 thermal cycles. Then the specimens were sealed with nail varnish, stained with 2% methylen blue for 24hs, sectioned, and examined under a stereomicroscope. They were scored for marginal microleakage that occurred between the adhesive-enamel and bracket-adhesive interfaces from the occlusal and gingival margins. Data were analyzed with the Kruskal- Wallis test.For the adhesive-enamel and bracket-adhesive surfaces, significant differences were not observed between the three groups.According to this study, the Er:YAG laser with 1.5 and 2.1 watt settings may be used as an adjunctive for preparing the surface for orthodontic bracket bonding.

  8. Influence of Non-uniform Temperature Field on Spectra of Fibre Bragg Grating

    International Nuclear Information System (INIS)

    Yan, Zhou; Xing-Fang, He; Xiao-Yong, Fang; Jie, Yuan; Li-Qun, Yin; Mao-Sheng, Cao

    2009-01-01

    We simulate the spectrum characteristics of fibre Bragg grating (FBG) with non-uniform temperature using the transmission matrix method, and the results are analysed. It is found that firstly the modulated coefficient of average refractive index is a very important parameter that influences the spectrum characteristic of the fibre Bragg grating, and secondly the spectrum curves are different in different temperature fields at the same parameter. Hence, we can determine the metrical temperature by analysing the spectrum of fibre Bragg grating

  9. Pemodelan Tapis Fabry-perot pada Serat Optik dengan Menggunakan Fiber Bragg Grating

    OpenAIRE

    Pramuliawati, Septi; ', Saktioto; ', Defrianto

    2015-01-01

    Fabry-perot filter was successfully developed by a uniform Fiber Bragg Grating in fiber optic. A characterization of Bragg Grating was analyzed by using computational model with second-order of Transfer Matrix Method based on Coupled Mode Theory. The reflectivity, length of grating, and bandwidth were parametrics to determine the performance of single Bragg Grating. The transmission spectrum showed the longer grating is designed, the larger the reflectivity was produced, so that the transmiss...

  10. All-Silica Hollow-Core Microstructured Bragg Fibers for Biosensor Application

    DEFF Research Database (Denmark)

    Passaro, Davide; Foroni, Matteo; Poli, Federica

    2008-01-01

    The possibility to exploit all-silica hollow-core-microstructured Bragg fibers to realize a biosensor useful to detect the DNA hybridization process has been investigated. A Bragg fiber recently fabricated has been considered for the analysis performed by means of a full-vector modal solver based...... layer on the inner surface of the fiber holes can modify the fundamental mode properties. The numerical analysis results have successfully demonstrated the DNA bio-sensor feasibility in hollow-core Bragg fibers....

  11. Microdosimetry for a carbon ion beam using track-etched detectors

    International Nuclear Information System (INIS)

    Ambrozova, I.; Ploc, O.; Davidkova, M.; Vondracek, V.; Sefl, M.; Stepan, V.; Pachnerova Brabcova, K.; Incerti, S.

    2015-01-01

    Track-etched detectors (TED) have been used as linear energy transfer (LET) spectrometers in heavy ion beams for many years. LET spectra and depth -dose distribution of a carbon ion beam were measured behind polymethylmethacrylate degraders at Heavy Ion Medical Accelerator in Chiba, Japan. The measurements were performed along monoenergetic beam with energy 290 MeV u -1 in different positions: (1) at beam extraction area, (2) at beginning, (3) maximum and (4) behind the Bragg peak region (0, 117, 147 and 151 mm of water-equivalent depth, respectively). The LET spectra inside and outside of the primary ion beam have been evaluated. TED record only heavy charged particles with LET above 8 -10 keV μm -1 , while electrons and ions with lower LET are not detected. The Geant4 simulation toolkit version 4.9.6.P01 has been used to estimate the contribution of non-detected particles to absorbed dose. Presented results demonstrate the applicability of TED for microdosimetry measurements in therapeutic carbon ion beams. (authors)

  12. High-density plasma etching characteristics of indium-gallium-zinc oxide thin films in CF{sub 4}/Ar plasma

    Energy Technology Data Exchange (ETDEWEB)

    Joo, Young-Hee; Kim, Chang-Il

    2015-05-29

    We investigated the etching process of indium-gallium-zinc oxide (IGZO) thin films in an inductively coupled plasma system. The dry etching characteristics of the IGZO thin films were studied by varying the CF{sub 4}/Ar gas mixing ratio, RF power, DC-bias voltage, and process pressure. We determined the following optimized process conditions: an RF power of 700 W, a DC-bias voltage of − 150 V, and a process pressure of 2 Pa. A maximum etch rate of 25.63 nm/min for the IGZO thin films was achieved in a plasma with CF{sub 4}/Ar(= 25:75), and the selectivity of IGZO to Al and TiN was found to be 1.3 and 0.7, respectively. We determined the ionic composition of the CF{sub 4}/Ar plasma using optical emission spectroscopy. Analysis of chemical reactions at the IGZO thin film surfaces was performed using X-ray photoelectron spectroscopy. - Highlights: • IGZO thin film was etched by CF{sub 4}/Ar plasma as a function of gas mixing ratio. • IGZO bonds were broken Ar{sup +} sputtering and then reacted with the C-F{sub x} radicals. • The physical sputtering is dominant in etch control compared with chemical etching.

  13. Developments regarding the Bragg rule for stopping power and critical examination of its application to water

    International Nuclear Information System (INIS)

    Kamaratos, E.

    1983-01-01

    A critical comparison is made of various experimental findings regarding the Bragg additivity rule for stopping power. It appears that deviations from the Bragg additivity rule reported a long time ago and ascribed to chemical binding effects and phase effects are real, despite even recent statements of the contrary. Nevertheless, when the Bragg rule is applied to water, critical examination of very recent experimental results for the stopping power in the gaseous state of water, hydrogen and oxygen in this work suggest that the reported deviations from the Bragg additivity rule for the stopping power of gaseous water may be the result of experimental error. (orig.)

  14. Damage Evaluation and Analysis of Composite Pressure Vessels Using Fiber Bragg Gratings to Determine Structural Health

    National Research Council Canada - National Science Library

    Kunzler, Marley; Udd, Eric; Kreger, Stephen; Johnson, Mont; Henrie, Vaughn

    2005-01-01

    .... Using fiber Bragg gratings embedded into the weave structure of carbon fiber epoxy composites allow the capability to monitor these composites during manufacture, cure, general aging, and damage...

  15. Radiation resistance of track etched membranes

    International Nuclear Information System (INIS)

    Buczkowski, M.; Sartowska, B.; Wawszczak, D.; Starosta, W.

    2001-01-01

    Track etched membranes (TEMs) obtained by irradiation of polymer films with heavy ions and subsequent etching of latent tracks can be applied in many fields and among others in biomedicine as well. It is important to know radiation resistance of TEMs because of wide use of radiation sterilization in the case of biomedical devices. Tensile properties of TEMs made of PET and PC films with the thickness of 10 μm after electron irradiation at different doses are known from literature. Nowadays TEMs are being manufactured from thicker (20 μm) PET and PC films as well as polyethylene naphthalate (PEN) films are proposed for TEMs. It seems to be important to get data about radiation resistance of new kinds of TEMs. Samples of polymer films made of PET and PEN with the thickness of 19-25 μm and TEMs made of such materials have been irradiated using 10 MeV electron beam with doses up to 990 kGy. Tensile properties and SEM photographs of the samples after irradiation are given in the paper

  16. Optical single sideband modulation radio over fiber system by using a fiber-Bragg-grating-based acousto-optic filter

    Science.gov (United States)

    Gao, Song; Pei, Li; Li, Zhuoxuan; Liu, Chao; Wang, Yiqun; Weng, Sijun

    2013-03-01

    An optical single sideband (OSSB) modulation radio over a fiber system, by using an acousto-optic filter (AOF), is proposed and demonstrated. In the AOF, a uniform fiber Bragg grating is etched and modulated by an axially propagating acoustic wave. Due to the acousto-optic superlattice modulation, two secondary reflection peaks, centered on the primary reflection peak, are generated. In the scheme, an optical double-sideband signal passes though the AOF to realize OSSB modulation. Because the reflect depth of the primary peak is much deeper than those of the secondary peaks, the carrier experiences higher attenuation than the upper sideband, which means the carrier-to-sideband ratio (CSR) can be optimized at the same time. We demonstrate this scheme via simulations, and successfully reduce the CSR from 9.73 to 2.9 dB. As a result, the receiving sensitivity improved from -23.43 to -31.18 dBm at BER of 10-9 with 30 km long SMF.

  17. What Is Dry Eye?

    Medline Plus

    Full Text Available ... Stories Español Eye Health / Eye Health A-Z Dry Eye Sections What Is Dry Eye? Dry Eye Symptoms ... of Dry Eye Dry Eye Treatment What Is Dry Eye? Leer en Español: ¿Qué es el ojo seco? ...

  18. What Is Dry Eye?

    Medline Plus

    Full Text Available ... Español Eye Health / Eye Health A-Z Dry Eye Sections What Is Dry Eye? Dry Eye Symptoms ... Dry Eye Dry Eye Treatment What Is Dry Eye? Leer en Español: ¿Qué es el ojo seco? ...

  19. Selective laser etching or ablation for fabrication of devices

    KAUST Repository

    Buttner, Ulrich; Salama, Khaled N.; Sapsanis, Christos

    2017-01-01

    Methods of fabricating devices vial selective laser etching are provided. The methods can include selective laser etching of a portion of a metal layer, e.g. using a laser light source having a wavelength of 1,000 nm to 1,500 nm. The methods can

  20. Particle precipitation in connection with KOH etching of silicon

    DEFF Research Database (Denmark)

    Nielsen, Christian Bergenstof; Christensen, Carsten; Pedersen, Casper

    2004-01-01

    This paper considers the precipitation of iron oxide particles in connection with the KOH etching of cavities in silicon wafers. The findings presented in this paper suggest that the source to the particles is the KOH pellets used for making the etching solution. Experiments show that the precipi......This paper considers the precipitation of iron oxide particles in connection with the KOH etching of cavities in silicon wafers. The findings presented in this paper suggest that the source to the particles is the KOH pellets used for making the etching solution. Experiments show...... that the precipitation is independent of KOH etching time, but that the amount of deposited material varies with dopant type and dopant concentration. The experiments also suggest that the precipitation occurs when the silicon wafers are removed from the KOH etching solution and not during the etching procedure. When...... not removed, the iron oxide particles cause etch pits on the Si surface when later processed and exposed to phosphoric acid. It has been found that the particles can be removed in an HCl solution, but not completely in an H2SO4- H2O2 solution. The paper discusses the involved precipitation mechanism in terms...

  1. Micropatterning on cylindrical surfaces via electrochemical etching using laser masking

    International Nuclear Information System (INIS)

    Cho, Chull Hee; Shin, Hong Shik; Chu, Chong Nam

    2014-01-01

    Highlights: • Various micropatterns were fabricated on the cylindrical surface of a stainless steel shaft. • Selective electrochemical dissolution was achieved via a series process of laser masking and electrochemical etching. • Laser masking characteristics on the non-planar surface were investigated. • A uniform mask layer was formed on the cylindrical surface via synchronized laser line scanning with a rotary system. • The characteristics of electrochemical etching on the non-planar surface were investigated. - Abstract: This paper proposes a method of selective electrochemical dissolution on the cylindrical surfaces of stainless steel shafts. Selective electrochemical dissolution was achieved via electrochemical etching using laser masking. A micropatterned recast layer was formed on the surface via ytterbium-doped pulsed fiber laser irradiation. The micropatterned recast layer could be used as a mask layer during the electrochemical etching process. Laser masking condition to form adequate mask layer on the planar surface for etching cannot be used directly on the non-planar surface. Laser masking condition changes depending on the morphological surface. The laser masking characteristics were investigated in order to form a uniform mask layer on the cylindrical surface. To minimize factors causing non-uniformity in the mask layer on the cylindrical surface, synchronized laser line scanning with a rotary system was applied during the laser masking process. Electrochemical etching characteristics were also investigated to achieve deeper etched depth, without collapsing the recast layer. Consequently, through a series process of laser masking and electrochemical etching, various micropatternings were successfully performed on the cylindrical surfaces

  2. Simulation of convection-driven wet-chemical etching

    NARCIS (Netherlands)

    Driesen, C.H.

    1999-01-01

    In a wet-chemical etching process, the resulting etched shape is smaller than the originally designed shape at the mask. This is caused by the fact that, as soon as material next to the mask is dissolved, material under the mask will be dissolved too. This is the so-called undercut effect. During an

  3. Simulation of convection-driven wet-chemical etching

    NARCIS (Netherlands)

    Driesen, C.H.

    1999-01-01

    a wet-chemical etching process, the resulting etched shape is smaller than the originally designed shape at the mask. This is caused by the fact that, as soon as material next to the mask is dissolved, material under the mask will be dissolved too. This is the so-called undercut effect. During an

  4. Physical chemistry of wet chemical anisotropic etching of silicon

    NARCIS (Netherlands)

    Elwenspoek, Michael Curt

    1995-01-01

    In this paper we explain a view to understand the anisotropy of the etching of silicon in certain wet chemical agents (such as KOH). The starting point is the assumption that the [Left angle bracket]111[Right Angle Bracket] face of silicon is a flat face, the etch rate of which is then governed by a

  5. Longevity of Self-etch Dentin Bonding Adhesives Compared to Etch-and-rinse Dentin Bonding Adhesives: A Systematic Review.

    Science.gov (United States)

    Masarwa, Nader; Mohamed, Ahmed; Abou-Rabii, Iyad; Abu Zaghlan, Rawan; Steier, Liviu

    2016-06-01

    A systematic review and meta-analysis were performed to compare longevity of Self-Etch Dentin Bonding Adhesives to Etch-and-Rinse Dentin Bonding Adhesives. The following databases were searched for PubMed, MEDLINE, Web of Science, CINAHL, the Cochrane Library complemented by a manual search of the Journal of Adhesive Dentistry. The MESH keywords used were: "etch and rinse," "total etch," "self-etch," "dentin bonding agent," "bond durability," and "bond degradation." Included were in-vitro experimental studies performed on human dental tissues of sound tooth structure origin. The examined Self-Etch Bonds were of two subtypes; Two Steps and One Step Self-Etch Bonds, while Etch-and-Rinse Bonds were of two subtypes; Two Steps and Three Steps. The included studies measured micro tensile bond strength (μTBs) to evaluate bond strength and possible longevity of both types of dental adhesives at different times. The selected studies depended on water storage as the aging technique. Statistical analysis was performed for outcome measurements compared at 24 h, 3 months, 6 months and 12 months of water storage. After 24 hours (p-value = 0.051), 3 months (p-value = 0.756), 6 months (p-value=0.267), 12 months (p-value=0.785) of water storage self-etch adhesives showed lower μTBs when compared to the etch-and-rinse adhesives, but the comparisons were statistically insignificant. In this study, longevity of Dentin Bonds was related to the measured μTBs. Although Etch-and-Rinse bonds showed higher values at all times, the meta-analysis found no difference in longevity of the two types of bonds at the examined aging times. Copyright © 2016 Elsevier Inc. All rights reserved.

  6. The chemical and electrochemical anisotropic etching of silicon

    International Nuclear Information System (INIS)

    Dixon, E.

    1997-06-01

    The success of silicon IC technology in producing a wide variety of microstructures relies heavily on the orientation dependant etching observed for silicon in alkaline media. Despite the rapid growth of this industry, the chemical and electrochemical mechanisms by which anisotropic etching occurs remain poorly understood. The most common etchant systems in use are ethylenediamine-pyrocatechol-water (EPW) and potassium hydroxide-isopropanol-water (KOH-IPA), and whilst these systems are highly plane selective they each have distinct disadvantages. The occurrence of inhomogeneities such as micropyramids and pits on the surface of etched substrates is a particularly disadvantageous characteristic of many alkaline etching systems. A complete understanding of the chemical and electrochemical anisotropic etching mechanisms is essential in order to obtain more reproducible etching, improved etch rate ratios and the development of more reliable etching baths. Wet chemical etching experiments to evaluate the etching rates for the different alkali metal cations have shown that similar etch rates are observed for LiOH, NaOH and KOH but those of RbOH and CsOH are significantly lower. The presence of impurities was shown to worsen the etched wafer's surface finish obtained in these etching baths. Additives have been shown to dramatically improve the surface finish with the presence of IPA in conjunction with etchant oxygenation virtually eliminating all surface defects. Electrochemical experiments were used to assess the electrochemical behaviour of Si p-(100) in of a wide variety of etchants and variations were seen according to the etchant used. A.C impedance spectroscopy showed a variation in the flat-band potential (V FB ) according to alkali metal hydroxide etchant used. These trends were similarly observed in the presence of isopropanol. Oxygenation was observed to reproducibly alter the flat-band potentials. A.c impedance spectroscopic studies additionally confirmed the

  7. Long-term bond strength of adhesive systems applied to etched and deproteinized dentin

    Directory of Open Access Journals (Sweden)

    Ninoshka Uceda-Gómez

    2007-12-01

    Full Text Available The aim of this study was to evaluate the early and 12-month bond strength of two adhesive systems (Single Bond-SB and One Step-OS applied to demineralized dentin (WH and demineralized/NaOCl-treated dentin (H. Twenty flat dentin surfaces were exposed, etched, rinsed and slightly dried. For the H groups, a solution of 10% NaOCl was applied for 60 s, rinsed (15 s and slightly dried. The adhesives were applied according to the manufacturer's instructions and composite resin crowns were incrementally constructed. After 24 h (water-37ºC, the specimens was sectioned in order to obtain resin-dentin sticks (0.8 mm². The specimens were tested in microtensile (0.5 mm/min immediately (IM or after 12 months of water storage (12M. The data (MPa were subjected to ANOVA and Tukey's test (a=0.05. Only the main factors adhesive and time were significant (p=0.004 and p=0.003, respectively. SB (42.3±9.1 showed higher bond strengths than OS (33.6±11.6. The mean bond strength for IM-group (42.5±8.7 was statistically superior to 12M (33.3±11.8. The use of 10% NaOCl, after acid etching, did not improve the immediate and the long-term resin-dentin bond strength.

  8. Etched ion track polymer membranes for sustained drug delivery

    International Nuclear Information System (INIS)

    Rao, Vijayalakshmi; Amar, J.V.; Avasthi, D.K.; Narayana Charyulu, R.

    2003-01-01

    The method of track etching has been successfully used for the production of polymer membranes with capillary pores. In the present paper, micropore membranes have been prepared by swift heavy ion irradiation of polycarbonate (PC). PC films were irradiated with ions of gold, silicon and oxygen of varying energies and fluence. The ion tracks thus obtained were etched chemically for various time intervals to get pores and these etched films were used as membranes for the drug release. Ciprofloxacine hydrochloride was used as model drug for the release studies. The drug content was estimated spectrophotometrically. Pore size and thus the drug release is dependent on the etching conditions, ions used, their energy and fluence. Sustained drug release has been observed in these membranes. The films can be selected for practical utilization by optimizing the irradiation and etching conditions. These films can be used as transdermal patches after medical treatment

  9. Features of copper etching in chlorine-argon plasma

    International Nuclear Information System (INIS)

    Efremov, A.M.; Svettsov, V.I.

    1995-01-01

    Chlorine mixtures with inert gases including argon exhibit promise as plasma feed gases for etching metals and semiconductors in the microelectronics industry. It was shown that even strong dilution of reactive gas with an inert gas (up to 80-90% of the latter) has virtually no effect in decreasing the rate of plasma etching of materials such as silicon and gallium arsenide, compared to etching in pure chlorine. The principal reactive species responsible for etching these substrates are chlorine atoms therefore, a possible explanation of the effect is an increase in the rate of bulk generation of chlorine atoms in the presence of argon. In this work the authors studied the influence of argon on the rate of copper etching in chlorine, because copper, unlike the above substrates, reacts effectively not only with the atoms but with the ground-state molecules of chlorine

  10. Future developments in etched track detectors for neutron dosimetry

    International Nuclear Information System (INIS)

    Tommasino, L.

    1987-01-01

    Many laboratories engaged in the field of personal neutron dosimetry are interested in developing better etching processes and improving the CR-39 detecting materials. To know how much effort must still be devoted to the development of etch track dosimetry, it is necessary to understand the advantages. limitations and degree of exploitation of the currently available techniques. So much has been learned about the chemical and electrochemical etching processes that an optimised combination of etching processes could make possible the elimination of many of the existing shortcomings. Limitations of etched track detectors for neutron dosimetry arise mainly because the registration occurs only on the detector surface. These damage type detectors are based on radiation induced chain scission processes in polymers, which result in hole-type tracks in solids. The converse approach, yet to be discovered, would be the development of cure-track detectors, where radiation induced cross linking between organic polymer chains could result in solid tracks in liquids. (author)

  11. Optimization of permanganic etching of polyethylenes for scanning electron microscopy

    International Nuclear Information System (INIS)

    Naylor, K.L.; Phillips, P.J.

    1983-01-01

    The permanganic etching technique has been studied as a function of time, temperature, and concentration for a series of polyethylenes. Kinetic studies show that a film of reaction products builds up on the surface, impeding further etching, an effect which is greatest for the lowest-crystallinity polymers. SEM studies combined with EDS show that the film contains sulfur, potassium and some manganese. An artifact is produced by the etching process which is impossible to remove by washing procedures if certain limits of time, temperature, and concentration are exceeded. For lower-crystallinity polyethylenes multiple etching and washing steps were required for optimal resolution. Plastic deformation during specimen preparation, whether from scratches or freeze fracturing, enhances artifact formation. When appropriate procedures are used, virtually artifact-free surfaces can be produced allowing a combination of permanganic etching and scanning electron microscopy to give a rapid method for detailed morphological characterization of bulk specimens

  12. Etch characteristics of BCB film using inductively coupled plasma

    International Nuclear Information System (INIS)

    Kang, Pil Seung; Kim, Dong Pyo; Kim, Kyoung Tae; Kim, Chang Il; Kim, Sang Gi

    2003-01-01

    The etching characteristics and mechanism of BCB thin films were investigated as a function of CF 4 /O 2 mixing ratio in ICP system. Maximum etch rate of 830 nm/min is obtained at the mixture of O 2 /CF 4 (=80%/20%). OES actinometry results showed that volume density of oxygen atoms fallows the same extreme behavior with the BCB etch rate, while the density of fluorine atoms changes monotonously. Therefore chemical destruction of BCB by oxygen atoms was proposed as the dominant etch mechanism. XPS analysis showed that the addition of CF 4 to O 2 helps to volatilize silicon atoms containing in BCB but leads to the formation of F-containing polymer layer. The profile of etched BCB film was close to 90 .deg. and the surface was clean

  13. Effects of mask imperfections on InP etching profiles

    International Nuclear Information System (INIS)

    Huo, D.T.C.; Yan, M.F.; Wynn, J.D.; Wilt, D.P.

    1990-01-01

    The authors have demonstrated that the quality of etch masks has a significant effect on the InP etching profiles. In particular, the authors have shown that mask imperfections can cause defective etching profiles, such as vertical sidewalls and extra mask undercutting in InP. The authors also discovered that the geometry of these defective profiles is determined by the orientation of the substrate relative to the direction of the mask imperfections. Along a left-angle 110 right-angle line mask defect, the downward etching process changes the left-angle 110 right-angle v-grooves to vertical sidewalls without extra undercutting. For v-grooves aligned along the left-angle 110 right-angle direction, defects on the mask give a significant extra undercutting without changing the etching profile

  14. Optical-fiber strain sensors with asymmetric etched structures.

    Science.gov (United States)

    Vaziri, M; Chen, C L

    1993-11-01

    Optical-fiber strain gauges with asymmetric etched structures have been analyzed, fabricated, and tested. These sensors are very sensitive with a gauge factor as high as 170 and a flat frequency response to at least 2.7 kHz. The gauge factor depends on the asymmetry of the etched structures and the number of etched sections. To understand the physical principles involved, researchers have used structural analysis programs based on a finite-element method to analyze fibers with asymmetric etched structures under tensile stress. The results show that lateral bends are induced on the etched fibers when they are stretched axially. To relate the lateral bending to the optical attenuation, we have also employed a ray-tracing technique to investigate the dependence of the attenuation on the structural deformation. Based on the structural analysis and the ray-tracing study parameters affecting the sensitivity have been studied. These results agree with the results of experimental investigations.

  15. Photonic jet μ-etching: from static to dynamic process

    Science.gov (United States)

    Abdurrochman, A.; Lecler, S.; Zelgowski, J.; Mermet, F.; Fontaine, J.; Tumbelaka, B. Y.

    2017-05-01

    Photonic jet etching is a direct-laser etching method applying photonic jet phenomenon to concentrate the laser beam onto the proceeded material. We call photonic jet the phenomenon of the localized sub-wavelength propagative beam generated at the shadow-side surfaces of micro-scale dielectric cylinders or spheres, when they are illuminated by an electromagnetic plane-wave or laser beam. This concentration has made possible the laser to yield sub-μ etching marks, despite the laser was a near-infrared with nano-second pulses sources. We will present these achievements from the beginning when some spherical glasses were used for static etching to dynamic etching using an optical fiber with a semi-elliptical tip.

  16. ICP etching for InAs-based InAs/GaAsSb superlattice long wavelength infrared detectors

    Science.gov (United States)

    Huang, Min; Chen, Jianxin; Xu, Jiajia; Wang, Fangfang; Xu, Zhicheng; He, Li

    2018-05-01

    In this work, we study and report the dry etching processes for InAs-based InAs/GaAsSb strain-free superlattice long wavelength infrared (LWIR) detectors. The proper etching parameters were first obtained through the parametric studies of Inductively Coupled Plasma (ICP) etching of both InAs and GaSb bulk materials in Cl2/N2 plasmas. Then an InAs-based InAs/GaAsSb superlattice LWIR detector with PπN structure was fabricated by using the optimized etching parameters. At 80 K, the detector exhibits a 100% cut-off wavelength of 12 μm and a responsivity of 1.5 A/W. Moreover, the dark current density of the device under a bias of -200 mV reaches 5.5 × 10-4 A/cm2, and the R0A is 15 Ω cm2. Our results pave the way towards InAs-based superlattice LWIR detectors with better performances.

  17. A novel deep reactive ion etched (DRIE) glass micro-model for two-phase flow experiments.

    Science.gov (United States)

    Karadimitriou, N K; Joekar-Niasar, V; Hassanizadeh, S M; Kleingeld, P J; Pyrak-Nolte, L J

    2012-09-21

    In the last few decades, micro-models have become popular experimental tools for two-phase flow studies. In this work, the design and fabrication of an innovative, elongated, glass-etched micro-model with dimensions of 5 × 35 mm(2) and constant depth of 43 microns is described. This is the first time that a micro-model with such depth and dimensions has been etched in glass by using a dry etching technique. The micro-model was visualized by a novel setup that allowed us to monitor and record the distribution of fluids throughout the length of the micro-model continuously. Quasi-static drainage experiments were conducted in order to obtain equilibrium data points that relate capillary pressure to phase saturation. By measuring the flow rate of water through the flow network for known pressure gradients, the intrinsic permeability of the micro-model's flow network was also calculated. The experimental results were used to calibrate a pore-network model and test its validity. Finally, we show that glass-etched micro-models can be valuable tools in single and/or multi-phase flow studies and their applications.

  18. Prototyping method for Bragg-type atom interferometers

    Energy Technology Data Exchange (ETDEWEB)

    Benton, Brandon; Krygier, Michael; Heward, Jeffrey; Edwards, Mark [Department of Physics, Georgia Southern University, Statesboro, Georgia 30460-8031 (United States); Clark, Charles W. [Joint Quantum Insitute, National Institute of Standards and Technology and the University of Maryland, Gaithersburg, Maryland 20899 (United States)

    2011-10-15

    We present a method for rapid modeling of new Bragg ultracold atom-interferometer (AI) designs useful for assessing the performance of such interferometers. The method simulates the overall effect on the condensate wave function in a given AI design using two separate elements. These are (1) modeling the effect of a Bragg pulse on the wave function and (2) approximating the evolution of the wave function during the intervals between the pulses. The actual sequence of these pulses and intervals is then followed to determine the approximate final wave function from which the interference pattern can be calculated. The exact evolution between pulses is assumed to be governed by the Gross-Pitaevskii (GP) equation whose solution is approximated using a Lagrangian variational method to facilitate rapid estimation of performance. The method presented here is an extension of an earlier one that was used to analyze the results of an experiment [J. E. Simsarian et al., Phys. Rev. Lett. 85, 2040 (2000)], where the phase of a Bose-Einstein condensate was measured using a Mach-Zehnder-type Bragg AI. We have developed both 1D and 3D versions of this method and we have determined their validity by comparing their predicted interference patterns with those obtained by numerical integration of the 1D GP equation and with the results of the above experiment. We find excellent agreement between the 1D interference patterns predicted by this method and those found by the GP equation. We show that we can reproduce all of the results of that experiment without recourse to an ad hoc velocity-kick correction needed by the earlier method, including some experimental results that the earlier model did not predict. We also found that this method provides estimates of 1D interference patterns at least four orders-of-magnitude faster than direct numerical solution of the 1D GP equation.

  19. Underwater Acoustic Sensors Based on Fiber Bragg Gratings

    Directory of Open Access Journals (Sweden)

    Giuseppe Parente

    2009-06-01

    Full Text Available We report on recent results obtained with a fiber optic hydrophone based on the intensity modulation of the laser light in a FBG (Fiber Bragg Grating under the influence of the sound pressure. In order to control the behavior of the hydrophone in terms of sensitivity and bandwidth, FBGs have been coated with proper materials, characterized by different elastic modulus and shapes. In particular, new experiments have been carried out using a cylindrical geometry with two different coating, showing that the sensitivity is not influenced by the shape but by the transversal dimension and the material characteristics of the coating.

  20. Microfiber-Based Bragg Gratings for Sensing Applications: A Review

    Directory of Open Access Journals (Sweden)

    Jun-Long Kou

    2012-06-01

    Full Text Available Microfiber-based Bragg gratings (MFBGs are an emerging concept in ultra-small optical fiber sensors. They have attracted great attention among researchers in the fiber sensing area because of their large evanescent field and compactness. In this review, the basic techniques for the fabrication of MFBGs are introduced first. Then, the sensing properties and applications of MFBGs are discussed, including measurement of refractive index (RI, temperature, and strain/force. Finally a summary of selected MFBG sensing elements from previous literature are tabulated.

  1. Time-dependent Bragg diffraction by multilayer gratings

    International Nuclear Information System (INIS)

    André, Jean-Michel; Jonnard, Philippe

    2016-01-01

    Time-dependent Bragg diffraction by multilayer gratings working by reflection or by transmission is investigated. The study is performed by generalizing the time-dependent coupled-wave theory previously developed for one-dimensional photonic crystals (André J-M and Jonnard P 2015 J. Opt. 17 085609) and also by extending the Takagi–Taupin approach of the dynamical theory of diffraction. The indicial response is calculated. It presents a time delay with a transient time that is a function of the extinction length for reflection geometry and of the extinction length combined with the thickness of the grating for transmission geometry. (paper)

  2. Exact bidirectional X -wave solutions in fiber Bragg gratings

    Science.gov (United States)

    Efremidis, Nikolaos K.; Nye, Nicholas S.; Christodoulides, Demetrios N.

    2017-10-01

    We find exact solutions describing bidirectional pulses propagating in fiber Bragg gratings. They are derived by solving the coupled-mode theory equations and are expressed in terms of products of modified Bessel functions with algebraic functions. Depending on the values of the two free parameters, the general bidirectional X -wave solution can also take the form of a unidirectional pulse. We analyze the symmetries and the asymptotic properties of the solutions and also discuss additional waveforms that are obtained by interference of more than one solution. Depending on their parameters, such pulses can create a sharp focus with high contrast.

  3. Development of pulse laser processing for mounting fiber Bragg grating

    Energy Technology Data Exchange (ETDEWEB)

    Nishimura, Aikihko; Shimada, Yukihiro; Yonemoto, Yukihiro; Suzuki, Hirokazu; Ishibashi, Hisayoshi [Quantum Beam Science Directorate, Japan Atomic Energy Agency, 8-1-7 Umebidai Kidugawa Kyoto 619-0215 (Japan); Applied Laser Technology Institute, Tsuruga Head Office, Japan Atomic Energy Agency, 65-20 Kizaki Tsuruga Fukui 914-8585 (Japan); Technical Research and Development Institute, Kumagai Gumi Co., Ltd., 2-1 Tsukudo, Shinjuku Tokyo 162-8557 (Japan)

    2012-07-11

    Pulse laser processing has been developed for the application of industrial plants in monitoring and maintenance. Surface cleaning by nano-second laser ablation was demonstrated for decontamination of oxide layers of Cr contained steel. Direct writing by femtosecond processing induced a Bragg grating in optical fiber to make it a seismic sensor for structural health monitoring. Adhesive cement was used to fix the seismic sensor on the surface of reactor coolant pipe material. Pulse laser processing and its related technologies were presented to overcome the severe accidents of nuclear power plants.

  4. Fiber Bragg Gratings for High-Temperature Thermal Characterization

    International Nuclear Information System (INIS)

    Stinson-Bagby, Kelly L.; Fielder, Robert S.

    2004-01-01

    Fiber Bragg grating (FBG) sensors were used as a characterization tool to study the SAFE-100 thermal simulator at the Nasa Marshal Space Flight Center. The motivation for this work was to support Nasa space nuclear power initiatives through the development of advanced fiber optic sensors for space-based nuclear power applications. Distributed high temperature measurements, up to 1150 deg. C, were made with FBG temperature sensors. Additionally, FBG strain measurements were taken at elevated temperatures to provide a strain profile of the core during operation. This paper will discuss the contribution of these measurements to meet the goals of Nasa Marshall Space Flight Center's Propulsion Research Center. (authors)

  5. Structural Health Monitoring of Bridges with Fiber Bragg Grating Sensors

    Directory of Open Access Journals (Sweden)

    Francisco Navarro-Henríquez

    2014-11-01

    Systems with fiber optic sensors FBG (Fiber Bragg Grating are consolidated in the Structural Health Monitoring (SMH of bridges, Nondestructive Testing (NDT static and dynamic measurements of deformation, displacement, deflection, temperature and vibration. This article provides a brief introduction to the technology and the fundamentals of fiber optic sensors, also present comparative advantages over its traditional counterpart is presented. Their characteristics are described and measurement graphics are presented as an application example of the FBG sensors. Finally, some key aspects to consider for proper use in the field are mentioned.

  6. Embedded Bragg grating fiber optic sensor for composite flexbeams

    Science.gov (United States)

    Bullock, Daniel; Dunphy, James; Hufstetler, Gerard

    1993-03-01

    An embedded fiber-optic (F-O) sensor has been developed for translaminar monitoring of the structural integrity of composites, with a view to application in composite helicopter flexbeams for bearingless main rotor hubs. This through-thickness strain sensor is much more sensitive than conventional in-plane embedded F-O sensors to ply delamination, on the basis of a novel insertion technique and innovative Bragg grating sensor. Experimental trials have demonstrated the detection by this means of potential failures in advance of the edge-delamination or crack-propagation effect.

  7. Perturbative approach to continuum generation in a fiber Bragg grating.

    Science.gov (United States)

    Westbrook, P S; Nicholson, J W

    2006-08-21

    We derive a perturbative solution to the nonlinear Schrödinger equation to include the effect of a fiber Bragg grating whose bandgap is much smaller than the pulse bandwidth. The grating generates a slow dispersive wave which may be computed from an integral over the unperturbed solution if nonlinear interaction between the grating and unperturbed waves is negligible. Our approach allows rapid estimation of large grating continuum enhancement peaks from a single nonlinear simulation of the waveguide without grating. We apply our method to uniform and sampled gratings, finding good agreement with full nonlinear simulations, and qualitatively reproducing experimental results.

  8. Study on strain transfer of embedded fiber Bragg grating sensors

    Science.gov (United States)

    Wu, Rujun; Zheng, Bailin; Fu, Kunkun; He, Pengfei; Tan, Yuegang

    2014-08-01

    In this study, a theoretical model of embedded fiber Bragg grating sensors was developed to provide predictions of the strain transfer rate and average strain transfer rate without the assumption that the host material is subjected to uniform axial stress. Further, a finite element (FE) analysis was performed to validate the present model. It was shown that the theoretical results with the present model are in good agreement with those by FE analysis. Finally, the parametric analysis was used to quantitatively investigate the effect of the parameters of the adhesive layer and host material on the strain transfer rate and average strain transfer rate.

  9. Optical parameters of the tunable Bragg reflectors in squid.

    Science.gov (United States)

    Ghoshal, Amitabh; Demartini, Daniel G; Eck, Elizabeth; Morse, Daniel E

    2013-08-06

    Cephalopods (e.g. octopus, squid and cuttlefish) dynamically tune the colour and brightness of their skin for camouflage and communication using specialized skin cells called iridocytes. We use high-resolution microspectrophotometry to investigate individual tunable Bragg structures (consisting of alternating reflectin protein-containing, high-refractive index lamellae and low-refractive index inter-lamellar spaces) in live and chemically fixed iridocytes of the California market squid, Doryteuthis opalescens. This subcellular, single-stack microspectrophotometry allows for spectral normalization, permitting use of a transfer-matrix model of Bragg reflectance to calculate all the parameters of the Bragg stack-the refractive indices, dimensions and numbers of the lamellae and inter-lamellar spaces. Results of the fitting analyses show that eight or nine pairs of low- and high-index layers typically contribute to the observed reflectivity in live cells, whereas six or seven pairs of low- and high-index layers typically contribute to the reflectivity in chemically fixed cells. The reflectin-containing, high-index lamellae of live cells have a refractive index proportional to the peak reflectivity, with an average of 1.405 ± 0.012 and a maximum around 1.44, while the reflectin-containing lamellae in fixed tissue have a refractive index of 1.413 ± 0.015 suggesting a slight increase of refractive index in the process of fixation. As expected, incremental changes in refractive index contribute to the greatest incremental changes in reflectivity for those Bragg stacks with the most layers. The excursions in dimensions required to tune the measured reflected wavelength from 675 (red) to 425 nm (blue) are a decrease from ca 150 to 80 nm for the high-index lamellae and from ca 120 to 50 nm for the low-index inter-lamellar spaces. Fixation-induced dimensional changes also are quantified, leading us to suggest that further microspectrophotometric analyses of this iridocyte

  10. Effect of etching on bonding of a self-etch adhesive to dentine affected by amelogenesis imperfecta.

    Science.gov (United States)

    Epasinghe, Don Jeevanie; Yiu, Cynthia Kar Yung

    2018-02-01

    Dentine affected by amelogenesis imperfecta (AI) is histologically altered due to loss of hypoplastic enamel and becomes hypermineralized. In the present study, we examined the effect of additional acid etching on microtensile bond strength of a self-etch adhesive to AI-affected dentine. Flat coronal dentine obtained from extracted AI-affected and non-carious permanent molars were allocated to two groups: (a) Clearfil SE Bond (control); and (b) Clearfil SE Bond and additional etching with 34% phosphoric acid for 15 seconds. The bonded teeth were sectioned into .8-mm 2 beams for microtensile bond strength testing, and stressed to failure under tension. The bond strength data were analyzed using two-way analysis of variance (dentine type and etching step) and Student-Newman-Keuls multiple comparison test (P<.05). Representative fractured beams from each group were examined under scanning electron microscopy. Both factors, dentine substrate (P<.001) and etching step (P<.05), and their interactions (P<.001), were statistically significant. Additional etching had an adverse effect on the bond strength of Clearfil SE Bond to normal dentine (P<.005), and no significant improvement was found for AI-affected dentine (P=.479). Additional acid etching does not improve the bond strength of a self-etch adhesive to AI-affected dentine. © 2017 John Wiley & Sons Australia, Ltd.

  11. Characterization of silicon isotropic etch by inductively coupled plasma etcher for microneedle array fabrication

    International Nuclear Information System (INIS)

    Ji, J; Tay, F E H; Miao Jianmin; Sun Jianbo

    2006-01-01

    This work investigates the isotropic etching properties in inductively coupled plasma (ICP) etcher for microneedle arrays fabrication. The effects of process variables including powers, gas and pressure on needle structure generation are characterized by factorial design of experiment (DOE). The experimental responses of vertical etching depth, lateral etching length, ratio of vertical etching depth to lateral etching length and photoresist etching rate are reported. The relevance of the etching variables is also presented. The obtained etching behaviours for microneedle structure generation will be applied to develop recipes to fabricate microneedles in designed dimensions

  12. Characterization of silicon isotropic etch by inductively coupled plasma etcher for microneedle array fabrication

    Energy Technology Data Exchange (ETDEWEB)

    Ji, J [Mechanical Engineering National University of Singapore, 119260, Singapore (Singapore); Tay, F E H [Mechanical Engineering National University of Singapore, 119260, Singapore (Singapore); Miao Jianmin [MicroMachines Center, School of Mechanical and Aerospace Engineering, Nanyang Technologica l University, 50 Nanyang Avenue, 639798 (Singapore); Sun Jianbo [MicroMachines Center, School of Mechanical and Aerospace Engineering, Nanyang Technologica l University, 50 Nanyang Avenue, 639798 (Singapore)

    2006-04-01

    This work investigates the isotropic etching properties in inductively coupled plasma (ICP) etcher for microneedle arrays fabrication. The effects of process variables including powers, gas and pressure on needle structure generation are characterized by factorial design of experiment (DOE). The experimental responses of vertical etching depth, lateral etching length, ratio of vertical etching depth to lateral etching length and photoresist etching rate are reported. The relevance of the etching variables is also presented. The obtained etching behaviours for microneedle structure generation will be applied to develop recipes to fabricate microneedles in designed dimensions.

  13. A Robust Fiber Bragg Grating Hydrogen Gas Sensor Using Platinum-Supported Silica Catalyst Film

    Directory of Open Access Journals (Sweden)

    Marina Kurohiji

    2018-01-01

    Full Text Available A robust fiber Bragg grating (FBG hydrogen gas sensor for reliable multipoint-leakage monitoring has been developed. The sensing mechanism is based on shifts of center wavelength of the reflection spectra due to temperature change caused by catalytic combustion heat. The sensitive film which consists of platinum-supported silica (Pt/SiO2 catalyst film was obtained using sol-gel method. The precursor solution was composed of hexachloroplatinic acid and commercially available silica precursor solution. The atom ratio of Si : Pt was fixed at 13 : 1. A small amount of this solution was dropped on the substrate and dried at room temperature. After that, the film was calcined at 500°C in air. These procedures were repeated and therefore thick hydrogen-sensitive films were obtained. The catalytic film obtained by 20-time coating on quartz glass substrate showed a temperature change 75 K upon exposure to 3 vol.% H2. For realizing robust sensor device, this catalytic film was deposited and FBG portion was directly fixed on titanium substrate. The sensor device showed good performances enough to detect hydrogen gas in the concentration range below lower explosion limit at room temperature. The enhancement of the sensitivity was attributed to not only catalytic combustion heat but also related thermal strain.

  14. Smelling in chemically complex environments: an optofluidic Bragg fiber array for differentiation of methanol adulterated beverages.

    Science.gov (United States)

    Yildirim, Adem; Ozturk, Fahri Emre; Bayindir, Mehmet

    2013-07-02

    A novel optoelectronic nose for analysis of alcohols (ethanol and methanol) in chemically complex environments is reported. The cross-responsive sensing unit of the optoelectronic nose is an array of three distinct hollow-core infrared transmitting photonic band gap fibers, which transmit a specific band of IR light depending on their Bragg mirror structures. The presence of alcohol molecules in the optofluidic core quenches the fiber transmissions if there is an absorption band of the analyte overlapping with the transmission band of the fiber; otherwise they remain unchanged. The cumulative response data of the fiber array enables rapid, reversible, and accurate discrimination of alcohols in chemically complex backgrounds such as beer and fruit juice. In addition, we observed that humidity of the environment has no effect on the response matrix of the optoelectronic nose, which is rarely achieved in gas-sensing applications. Consequently, it can be reliably used in virtually any environment without precalibration for humidity or drying the analytes. Besides the discussed application in counterfeit alcoholic beverages, with its superior sensor parameters, this novel concept proves to be a promising contender for many other applications including food quality control, environmental monitoring, and breath analysis for disease diagnostics.

  15. Crystal growth vs. conventional acid etching: A comparative evaluation of etch patterns, penetration depths, and bond strengths

    Directory of Open Access Journals (Sweden)

    Devanna Raghu

    2008-01-01

    Full Text Available The present study was undertaken to investigate the effect on enamel surface, penetration depth, and bond strength produced by 37% phosphoric acid and 20% sulfated polyacrylic acid as etching agents for direct bonding. Eighty teeth were used to study the efficacy of the etching agents on the enamel surface, penetration depth, and tensile bond strength. It was determined from the present study that a 30 sec application of 20% sulfated polyacrylic acid produced comparable etching topography with that of 37% phosphoric acid applied for 30 sec. The 37% phosphoric acid dissolves enamel to a greater extent than does the 20% sulfated polyacrylic acid. Instron Universal testing machine was used to evaluate the bond strengths of the two etching agents. Twenty percent sulfated polyacrylic acid provided adequate tensile bond strength. It was ascertained that crystal growth can be an alternative to conventional phosphoric acid etching as it dissolves lesser enamel and provides adequate tensile bond strength.

  16. Embedding silica and polymer fibre Bragg gratings (FBG) in plastic 3D-printed sensing patches

    DEFF Research Database (Denmark)

    Zubel, Michal G.; Sugden, Kate; Webb, David J.

    2016-01-01

    This paper reports the first demonstration of a silica fibre Bragg grating (SOFBG) embedded in an FDM 3-D printed housing to yield a dual grating temperature-compensated strain sensor. We also report the first ever integration of polymer fibre Bragg grating (POFBG) within a 3-D printed sensing...

  17. Design and UV writing of advanced Bragg gratings in optical fibers

    DEFF Research Database (Denmark)

    Plougmann, Nikolai

    2004-01-01

    : · Development of a novel polarization control method for UV writing of advanced Bragg gratings with arbitrary refractive index modulation profile including multiple pi-phase shifts. · Development of a novel efficient technique for Bragg grating design which allows calculating an index modulation profile...

  18. Polymer Optical Fibre Bragg Grating Humidity Sensor at 100ºC

    DEFF Research Database (Denmark)

    Woyessa, Getinet; Fasano, Andrea; Markos, Christos

    2016-01-01

    We have demonstrated a polymer optical fibre Bragg grating humidity sensor that can be operated up to 100ºC. The sensor has been fabricated from a polycarbonate (PC) microstructured polymer optical fibre Bragg grating (mPOFBG). PC mPOFBG gave a relative humidity (RH) sensitivity of 6.95±0.83 pm...

  19. Moiré phase-shifted fiber Bragg gratings in polymer optical fibers

    DEFF Research Database (Denmark)

    Min, Rui; Marques, Carlos; Bang, Ole

    2018-01-01

    We demonstrate a simple way to fabricate phase-shifted fiber Bragg grating in polymer optical fibers as a narrowband transmission filter for a variety of applications at telecom wavelengths. The filters have been fabricated by overlapping two uniform fiber Bragg gratings with slightly different...

  20. Dynamic strain measurement of hydraulic system pipeline using fibre Bragg grating sensors

    Directory of Open Access Journals (Sweden)

    Qiang Wang

    2016-04-01

    Full Text Available Fatigue failure is a serious problem in hydraulic piping systems installed in the machinery and equipment working in harsh operational conditions. To alleviate this problem, health monitoring of pipes can be conducted by measuring and analysing vibration-induced strain. Fibre Bragg grating is considered as a promising sensing approach for dynamic load monitoring. In this article, dynamic strain measurements based on fibre Bragg grating sensors for small-bore metal pipes have been investigated. The quasi-distributed strain sensing of fibre Bragg grating sensors is introduced. Two comparison experiments were carried out under vibration and impact loads among the methods of electrical strain gauge, piezoelectric accelerometer and fibre Bragg grating sensor. Experimental results indicate that fibre Bragg grating sensor possesses an outstanding ability to resist electromagnetic interference compared with strain gauge. The natural frequency measurement results, captured by fibre Bragg grating sensor, agree well with the modal analysis results obtained from finite element analysis. In addition, the attached fibre Bragg grating sensor brings a smaller impact on the dynamic characteristics of the measured pipe than the accelerometer due to its small size and lightweight. Fibre Bragg grating sensors have great potential for the quasi-distributed measurement of dynamic strain for the dynamic characteristic research and health monitoring of hydraulic system pipeline.

  1. A magnetically tunable non-Bragg defect mode in a corrugated waveguide filled with liquid crystals

    Science.gov (United States)

    Zhang, Lu; Fan, Ya-Xian; Liu, Huan; Han, Xu; Lu, Wen-Qiang; Tao, Zhi-Yong

    2018-04-01

    A magnetically tunable, non-Bragg defect mode (NBDM) was created in the terahertz frequency range by inserting a defect in the middle of a periodically corrugated waveguide filled with liquid crystals (LCs). In the periodic waveguide, non-Bragg gaps beyond the Bragg ones, which appear in the transmission spectra, are created by different transverse mode resonances. The transmission spectra of the waveguide containing a defect showed that a defect mode was present inside the non-Bragg gap. The NBDM has quite different features compared to the Bragg defect mode, which includes more complex, high-order guided wave modes. In our study, we filled the corrugated waveguide with LCs to realize the tunability of the NBDM. The simulated results showed that the NBDM in a corrugated waveguide filled with LCs can be used in filters, sensors, switches, and other terahertz integrated devices.

  2. Optical microphone with fiber Bragg grating and signal processing techniques

    Science.gov (United States)

    Tosi, Daniele; Olivero, Massimo; Perrone, Guido

    2008-06-01

    In this paper, we discuss the realization of an optical microphone array using fiber Bragg gratings as sensing elements. The wavelength shift induced by acoustic waves perturbing the sensing Bragg grating is transduced into an intensity modulation. The interrogation unit is based on a fixed-wavelength laser source and - as receiver - a photodetector with proper amplification; the system has been implemented using devices for standard optical communications, achieving a low-cost interrogator. One of the advantages of the proposed approach is that no voltage-to-strain calibration is required for tracking dynamic shifts. The optical sensor is complemented by signal processing tools, including a data-dependent frequency estimator and adaptive filters, in order to improve the frequency-domain analysis and mitigate the effects of disturbances. Feasibility and performances of the optical system have been tested measuring the output of a loudspeaker. With this configuration, the sensor is capable of correctly detecting sounds up to 3 kHz, with a frequency response that exhibits a top sensitivity within the range 200-500 Hz; single-frequency input sounds inducing an axial strain higher than ~10nɛ are correctly detected. The repeatability range is ~0.1%. The sensor has also been applied for the detection of pulsed stimuli generated from a metronome.

  3. Fiber Bragg grating sensor-based communication assistance device

    Science.gov (United States)

    Padma, Srivani; Umesh, Sharath; Pant, Shweta; Srinivas, Talabattula; Asokan, Sundarrajan

    2016-08-01

    Improvements in emergency medicine in the form of efficient life supporting systems and intensive care have increased the survival rate in critically injured patients; however, in some cases, severe brain and spinal cord injuries can result in a locked-in syndrome or other forms of paralysis, and communication with these patients may become restricted or impossible. The present study proposes a noninvasive, real-time communication assistive methodology for those with restricted communication ability, employing a fiber Bragg grating (FBG) sensor. The communication assistive methodology comprises a breath pattern analyzer using an FBG sensor, which acquires the exhalation force that is converted into strain variations on a cantilever. The FBG breath pattern analyzer along with specific breath patterns, which are programmed to give specific audio output commands, constitutes the proposed fiber Bragg grating sensor-based communication assistive device. The basic communication can be carried out by instructing the patients with restricted communication ability to perform the specific breath patterns. The present approach is intended to be an alternative to the common approach of brain-computer interface in which an instrument is utilized for learning of brain responses.

  4. Self-consistent electrodynamic scattering in the symmetric Bragg case

    International Nuclear Information System (INIS)

    Campos, H.S.

    1988-01-01

    We have analyzed the symmetric Bragg case, introducing a model of self consistent scattering for two elliptically polarized beams. The crystal is taken as a set of mathematical planes, each of them defined by a surface density of dipoles. We have considered the mesofield and the epifield differently from that of the Ewald's theory and, we assumed a plane of dipoles and the associated fields as a self consistent scattering unit. The exact analytical treatment when applied to any two neighbouring planes, results in a general and self consistent Bragg's equation, in terms of the amplitude and phase variations. The generalized solution for the set of N planes was obtained after introducing an absorption factor in the incident radiation, in two ways: (i) the analytical one, through a rule of field similarity, which says that the incidence occurs in both faces of the all crystal planes and also, through a matricial development with the Chebyshev polynomials; (ii) using the numerical solution we calculated, iteratively, the reflectivity, the reflection phase, the transmissivity, the transmission phase and the energy. The results are showed through reflection and transmission curves, which are characteristics as from kinematical as dynamical theories. The conservation of the energy results from the Ewald's self consistency principle is used. In the absorption case, the results show that it is not the only cause for the asymmetric form in the reflection curves. The model contains basic elements for a unified, microscope, self consistent, vectorial and exact formulation for interpretating the X ray diffraction in perfect crystals. (author)

  5. A simple Bragg detector design for AMS and IBA applications

    Energy Technology Data Exchange (ETDEWEB)

    Müller, Arnold Milenko; Döbeli, Max; Seiler, Martin; Synal, Hans-Arno

    2015-08-01

    A new compact Bragg type gas ionization chamber (GIC) has been built for use as particle counter in AMS and IBA applications. The detector stands out due to its simple concept, which does not include a Frisch grid. Test experiments have been performed with ions in the mass range from He to Th and energies ranging from 30 keV to 2.5 MeV, in order to find optimal measurement conditions and to characterize the detector performance. For projectiles heavier than Al at energies below 2.5 MeV the obtained energy resolution is comparable with that of a state-of-the-art GIC with Frisch grid and clearly outperforms solid state detectors. Additionally the operation of this simplified Bragg GIC in the electron multiplication mode was investigated for the first time, which allows the detection of radiocarbon ions at energies below 50 keV with an energy resolution of the order of 10 keV.

  6. Parasitic neutron bragg reflections from large imperfect single crystals

    Energy Technology Data Exchange (ETDEWEB)

    Naguib, K.; Adib, M

    1998-12-01

    A formula is given which allows to calculate the contribution of the total Bragg scattering from different (hkl) planes to the neutron transmission through a large imperfect single crystals. The formula takes into account the crystal structure type, its mosaic spread value, the plane along which the crystal surface is cut along and its orientation with respect to the neutron beam direction. A computer program ISCANF-1 was developed to calculate the total parasitic scattering cross-section from different (hkl) planes as well as the nuclear and diffuse scattering cross-sections. The ISCANF-1 program was applied to calculate the neutron attenuation through Cu and Zn single crystals, each of them cut along (002) planes. The calculated values of the neutron transmission through Cu and Zn crystals were compared with the measured ones in the wavelength range 0.21-0.47 nm and 0.04-0.52 nm respectively. The measured and calculated values were found to be in reasonable agreement within the statistical accuracy. The computer program ISCANF-1 was also applied to investigate the effect of parasitic Bragg scattering on the neutron filtering characteristics of both Zn and Cu single crystals as a function of their physical parameters.

  7. Parasitic neutron bragg reflections from large imperfect single crystals

    International Nuclear Information System (INIS)

    Naguib, K.; Adib, M.

    1998-01-01

    A formula is given which allows to calculate the contribution of the total Bragg scattering from different (hkl) planes to the neutron transmission through a large imperfect single crystals. The formula takes into account the crystal structure type, its mosaic spread value, the plane along which the crystal surface is cut along and its orientation with respect to the neutron beam direction. A computer program ISCANF-1 was developed to calculate the total parasitic scattering cross-section from different (hkl) planes as well as the nuclear and diffuse scattering cross-sections. The ISCANF-1 program was applied to calculate the neutron attenuation through Cu and Zn single crystals, each of them cut along (002) planes. The calculated values of the neutron transmission through Cu and Zn crystals were compared with the measured ones in the wavelength range 0.21-0.47 nm and 0.04-0.52 nm respectively. The measured and calculated values were found to be in reasonable agreement within the statistical accuracy. The computer program ISCANF-1 was also applied to investigate the effect of parasitic Bragg scattering on the neutron filtering characteristics of both Zn and Cu single crystals as a function of their physical parameters

  8. Fiber Bragg Grating Based System for Temperature Measurements

    Science.gov (United States)

    Tahir, Bashir Ahmed; Ali, Jalil; Abdul Rahman, Rosly

    In this study, a fiber Bragg grating sensor for temperature measurement is proposed and experimentally demonstrated. In particular, we point out that the method is well-suited for monitoring temperature because they are able to withstand a high temperature environment, where standard thermocouple methods fail. The interrogation technologies of the sensor systems are all simple, low cost and effective as well. In the sensor system, fiber grating was dipped into a water beaker that was placed on a hotplate to control the temperature of water. The temperature was raised in equal increments. The sensing principle is based on tracking of Bragg wavelength shifts caused by the temperature change. So the temperature is measured based on the wavelength-shifts of the FBG induced by the heating water. The fiber grating is high temperature stable excimer-laser-induced grating and has a linear function of wavelength-temperature in the range of 0-285°C. A dynamic range of 0-285°C and a sensitivity of 0.0131 nm/°C almost equal to that of general FBG have been obtained by this sensor system. Furthermore, the correlation of theoretical analysis and experimental results show the capability and feasibility of the purposed technique.

  9. Muscular condition monitoring system using fiber bragg grating sensors

    International Nuclear Information System (INIS)

    Kim, Heon Young; Lee, Jin Hyuk; Kim, Dae Hyun

    2014-01-01

    Fiber optic sensors (FOS) have advantages such as electromagnetic interference (EMI) immunity, corrosion resistance and multiplexing capability. For these reasons, they are widely used in various condition monitoring systems (CMS). This study investigated a muscular condition monitoring system using fiber optic sensors (FOS). Generally, sensors for monitoring the condition of the human body are based on electro-magnetic devices. However, such an electrical system has several weaknesses, including the potential for electro-magnetic interference and distortion. Fiber Bragg grating (FBG) sensors overcome these weaknesses, along with simplifying the devices and increasing user convenience. To measure the level of muscle contraction and relaxation, which indicates the muscle condition, a belt-shaped FBG sensor module that makes it possible to monitor the movement of muscles in the radial and circumferential directions was fabricated in this study. In addition, a uniaxial tensile test was carried out in order to evaluate the applicability of this FBG sensor module. Based on the experimental results, a relationship was observed between the tensile stress and Bragg wavelength of the FBG sensors, which revealed the possibility of fabricating a muscular condition monitoring system based on FBG sensors.

  10. Muscular condition monitoring system using fiber bragg grating sensors

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Heon Young; Lee, Jin Hyuk; Kim, Dae Hyun [Seoul National University of Technology, Seoul (Korea, Republic of)

    2014-10-15

    Fiber optic sensors (FOS) have advantages such as electromagnetic interference (EMI) immunity, corrosion resistance and multiplexing capability. For these reasons, they are widely used in various condition monitoring systems (CMS). This study investigated a muscular condition monitoring system using fiber optic sensors (FOS). Generally, sensors for monitoring the condition of the human body are based on electro-magnetic devices. However, such an electrical system has several weaknesses, including the potential for electro-magnetic interference and distortion. Fiber Bragg grating (FBG) sensors overcome these weaknesses, along with simplifying the devices and increasing user convenience. To measure the level of muscle contraction and relaxation, which indicates the muscle condition, a belt-shaped FBG sensor module that makes it possible to monitor the movement of muscles in the radial and circumferential directions was fabricated in this study. In addition, a uniaxial tensile test was carried out in order to evaluate the applicability of this FBG sensor module. Based on the experimental results, a relationship was observed between the tensile stress and Bragg wavelength of the FBG sensors, which revealed the possibility of fabricating a muscular condition monitoring system based on FBG sensors.

  11. Interrelated temperature dependence of bulk etch rate and track length saturation time in CR-39 detector

    International Nuclear Information System (INIS)

    Azooz, A.A.; Al-Jubbori, M.A.

    2013-01-01

    Highlights: • New empirical parameterization of CR-39 bulk etch rate. • Bulk etch rates measurements using two different methods give consistent results. • Temperature independence of track saturation length. • Two empirical relation between bulk etch rate and temperature are suggested. • Simple inverse relation between bulk etch rate and track saturation time. -- Abstract: Experimental measurements of the etching solution temperature dependence of bulk etch rate using two independent methods revealed a few interesting properties. It is found that while the track saturation length is independent of etching temperature, the etching time needed to reach saturation is strongly temperature-dependent. It is demonstrated that there is systematic simple inverse relation between track saturation time, and etching solution temperature. In addition, and although, the relation between the bulk etch rate and etching solution temperature can be reasonably described by a modified form of the Arrhenius equation, better fits can be obtained by another equation suggested in this work

  12. Defect sensitive etching of hexagonal boron nitride single crystals

    Science.gov (United States)

    Edgar, J. H.; Liu, S.; Hoffman, T.; Zhang, Yichao; Twigg, M. E.; Bassim, Nabil D.; Liang, Shenglong; Khan, Neelam

    2017-12-01

    Defect sensitive etching (DSE) was developed to estimate the density of non-basal plane dislocations in hexagonal boron nitride (hBN) single crystals. The crystals employed in this study were precipitated by slowly cooling (2-4 °C/h) a nickel-chromium flux saturated with hBN from 1500 °C under 1 bar of flowing nitrogen. On the (0001) planes, hexagonal-shaped etch pits were formed by etching the crystals in a eutectic mixture of NaOH and KOH between 450 °C and 525 °C for 1-2 min. There were three types of pits: pointed bottom, flat bottom, and mixed shape pits. Cross-sectional transmission electron microscopy revealed that the pointed bottom etch pits examined were associated with threading dislocations. All of these dislocations had an a-type burgers vector (i.e., they were edge dislocations, since the line direction is perpendicular to the [ 2 11 ¯ 0 ]-type direction). The pit widths were much wider than the pit depths as measured by atomic force microscopy, indicating the lateral etch rate was much faster than the vertical etch rate. From an Arrhenius plot of the log of the etch rate versus the inverse temperature, the activation energy was approximately 60 kJ/mol. This work demonstrates that DSE is an effective method for locating threading dislocations in hBN and estimating their densities.

  13. Model of wet chemical etching of swift heavy ions tracks

    Science.gov (United States)

    Gorbunov, S. A.; Malakhov, A. I.; Rymzhanov, R. A.; Volkov, A. E.

    2017-10-01

    A model of wet chemical etching of tracks of swift heavy ions (SHI) decelerated in solids in the electronic stopping regime is presented. This model takes into account both possible etching modes: etching controlled by diffusion of etchant molecules to the etching front, and etching controlled by the rate of a reaction of an etchant with a material. Olivine ((Mg0.88Fe0.12)2SiO4) crystals were chosen as a system for modeling. Two mechanisms of chemical activation of olivine around the SHI trajectory are considered. The first mechanism is activation stimulated by structural transformations in a nanometric track core, while the second one results from neutralization of metallic atoms by generated electrons spreading over micrometric distances. Monte-Carlo simulations (TREKIS code) form the basis for the description of excitations of the electronic subsystem and the lattice of olivine in an SHI track at times up to 100 fs after the projectile passage. Molecular dynamics supplies the initial conditions for modeling of lattice relaxation for longer times. These simulations enable us to estimate the effects of the chemical activation of olivine governed by both mechanisms. The developed model was applied to describe chemical activation and the etching kinetics of tracks of Au 2.1 GeV ions in olivine. The estimated lengthwise etching rate (38 µm · h-1) is in reasonable agreement with that detected in the experiments (24 µm · h-1).

  14. Feedback control of chlorine inductively coupled plasma etch processing

    International Nuclear Information System (INIS)

    Lin Chaung; Leou, K.-C.; Shiao, K.-M.

    2005-01-01

    Feedback control has been applied to poly-Si etch processing using a chlorine inductively coupled plasma. Since the positive ion flux and ion energy incident upon the wafer surface are the key factors that influence the etch rate, the ion current and the root mean square (rms) rf voltage on the wafer stage, which are measured using an impedance meter connected to the wafer stage, are adopted as the controlled variables to enhance etch rate. The actuators are two 13.56 MHz rf power generators, which adjust ion density and ion energy, respectively. The results of closed-loop control show that the advantages of feedback control can be achieved. For example, with feedback control, etch rate variation under the transient chamber wall condition is reduced roughly by a factor of 2 as compared to the open-loop case. In addition, the capability of the disturbance rejection was also investigated. For a gas pressure variation of 20%, the largest etch rate variation is about 2.4% with closed-loop control as compared with as large as about 6% variation using open-loop control. Also the effect of ion current and rms rf voltage on etch rate was studied using 2 2 factorial design whose results were used to derive a model equation. The obtained formula was used to adjust the set point of ion current and rf voltage so that the desired etch rate was obtained

  15. Photoelectrochemical etching of gallium nitride surface by complexation dissolution mechanism

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Miao-Rong [Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, 215123 Suzhou (China); University of Chinese Academy of Sciences, 100049 Beijing (China); Hou, Fei; Wang, Zu-Gang; Zhang, Shao-Hui [Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, 215123 Suzhou (China); Changchun University of Science and Technology, 130022 Changchun (China); Pan, Ge-Bo, E-mail: gbpan2008@sinano.ac.cn [Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, 215123 Suzhou (China)

    2017-07-15

    Graphical abstract: GaN surface was etched by 0.3 M EDTA-2Na. The proposed complexation dissolution mechanism can be applicable to almost all neutral etchants under the prerequisite of strong light and electric field. - Highlights: • GaN surface was etched by EDTA-2Na. • GaN may be dissolved into EDTA-2Na by forming Ga–EDTA complex. • We propose the complexation dissolution mechanism for the first time. - Abstract: Gallium nitride (GaN) surface was etched by 0.3 M ethylenediamine tetraacetic acid disodium (EDTA-2Na) via photoelectrochemical etching technique. SEM images reveal the etched GaN surface becomes rough and irregular. The pore density is up to 1.9 × 10{sup 9} per square centimeter after simple acid post-treatment. The difference of XPS spectra of Ga 3d, N 1s and O 1s between the non-etched and freshly etched GaN surfaces can be attributed to the formation of Ga–EDTA complex at the etching interface between GaN and EDTA-2Na. The proposed complexation dissolution mechanism can be broadly applicable to almost all neutral etchants under the prerequisite of strong light and electric field. From the point of view of environment, safety and energy, EDTA-2Na has obvious advantages over conventionally corrosive etchants. Moreover, as the further and deeper study of such nearly neutral etchants, GaN etching technology has better application prospect in photoelectric micro-device fabrication.

  16. COMPOSITE RESIN BOND STRENGTH TO ETCHED DENTINWITH ONE SELF PRIMING ADHESIVE

    Directory of Open Access Journals (Sweden)

    P SAMIMI

    2002-09-01

    Full Text Available Introduction. The purpose of this study was to compare shear bond strength of composite resins to etched dentin in both dry and wet dentin surface with active and inactive application of a single-bottle adhesive resin (Single Bond, 3M Dental products. Methods. Fourthy four intact human extracted molars and premolars teeth were selected. The facial surfaces of the teeth were grounded with diamond bur to expose dentin. Then specimens were divided into four groups of 11 numbers (9 Molars and 2 Premolars. All the samples were etched with Phosphoric Acid Gel 35% and then rinsed for 10 seconds. The following stages were carried out for each group: Group I (Active-Dry: After rinsing, air drying of dentin surface for 15 seconds, active priming of adhesive resin for 15 seconds, air drying for 5 seconds, the adhesive resin layer was light cured for 10 seconds. Group III (Inactive-Dry:After rinsing, air drying of dentin surface for 15 seconds, adhesive resin was applied and air dryied for 5 seconds, the adhesive layer was light cured for 10 seconds. Group III (Active-Wet:After rinsing, removal of excess water of dentin surface with a cotton roll, active priming of adhesive resin for 15 seconds and air drying for 5 seconds, the adhesive layer was light cured for 10 seconds. Group IV (Inactive-Wet:After rinsing, removal of excess water of dentin surface with a cotton roll, the adhesive resin was applied and air dryied for 5 seconds and then cured for 10 seconds. After adhesive resin application, composite resin (Z250, 3M Dental products was applied on prepared surface with cylindrical molds (with internal diameter of 2.8mm, & height of 5mm and light-cured for 100 seconds (5x20s. The samples were then thermocycled. They were located in 6±3c water .temperature for 10 seconds and then 15 seconds in inviromental temperature, 10s in 55±3c water temperature and then were located at room temperature for 15s. This test was repeated for 100s. All of the specimens

  17. What Is Dry Eye?

    Medline Plus

    Full Text Available ... Eye? Dry Eye Symptoms Causes of Dry Eye Dry Eye Treatment What Is Dry Eye? Leer en Español: ¿Qué ... Inside of Your Eyelid Nov 29, 2017 New Dry Eye Treatment is a Tear-Jerker Jul 21, 2017 Three ...

  18. What Is Dry Eye?

    Science.gov (United States)

    ... Eye? Dry Eye Symptoms Causes of Dry Eye Dry Eye Treatment What Is Dry Eye? Leer en Español: ¿Qué ... Inside of Your Eyelid Nov 29, 2017 New Dry Eye Treatment is a Tear-Jerker Jul 21, 2017 Three ...

  19. High-throughput anisotropic plasma etching of polyimide for MEMS

    International Nuclear Information System (INIS)

    Bliznetsov, Vladimir; Manickam, Anbumalar; Ranganathan, Nagarajan; Chen, Junwei

    2011-01-01

    This note describes a new high-throughput process of polyimide etching for the fabrication of MEMS devices with an organic sacrificial layer approach. Using dual frequency superimposed capacitively coupled plasma we achieved a vertical profile of polyimide with an etching rate as high as 3.5 µm min −1 . After the fabrication of vertical structures in a polyimide material, additional steps were performed to fabricate structural elements of MEMS by deposition of a SiO 2 layer and performing release etching of polyimide. (technical note)

  20. Spot formation of radiation particles by electrochemical etching

    International Nuclear Information System (INIS)

    Nozaki, Tetsuya

    1999-01-01

    An electrochemical etching (ECE) spot formation from the top of chemical etching (CE) spot was confirmed by a series of experiments. One of polycarbonate (Iupilon) could not make the spot, because ECE spot had grown up before the microscope confirming the CE spot. Clear CEC spots by α-ray and neutron were found on Harzlas and Baryotrak, both improvements of CR-39. Under the same etching conditions, the growth of ECE spot on Harzlas was more rapid than Baryotrak, but both spots were almost the same. All CE spot by α-ray produced the CEC spots, but a part of CE circle spot by neutron formed them. (S.Y.)

  1. Anisotropic etching of tungsten-nitride with ICP system

    CERN Document Server

    Lee, H G; Moon, H S; Kim, S H; Ahn, J; Sohn, S

    1998-01-01

    Inductively Coupled Plasma ion streaming etching of WN sub x film is investigated for preparing x-ray mask absorber patterns. SF sub 6 gas plasma provides for effective etching of WN sub x , and the addition of Ar and N sub 2 results in higher dissociation of SF sub 6 and sidewall passivation effect, respectively. Microloading effect observed for high aspect ratio patterns is minimized by multi-step etching and O sub 2 plasma treatment process. As a result, 0.18 mu m WN sub x line and space patterns with vertical sidewall profile are successfully fabricated.

  2. Metal-assisted chemical etch porous silicon formation method

    Science.gov (United States)

    Li, Xiuling; Bohn, Paul W.; Sweedler, Jonathan V.

    2004-09-14

    A thin discontinuous layer of metal such as Au, Pt, or Au/Pd is deposited on a silicon surface. The surface is then etched in a solution including HF and an oxidant for a brief period, as little as a couple seconds to one hour. A preferred oxidant is H.sub.2 O.sub.2. Morphology and light emitting properties of porous silicon can be selectively controlled as a function of the type of metal deposited, Si doping type, silicon doping level, and/or etch time. Electrical assistance is unnecessary during the chemical etching of the invention, which may be conducted in the presence or absence of illumination.

  3. High mobility bottom gate InGaZnO thin film transistors with SiOx etch stopper

    Science.gov (United States)

    Kim, Minkyu; Jeong, Jong Han; Lee, Hun Jung; Ahn, Tae Kyung; Shin, Hyun Soo; Park, Jin-Seong; Jeong, Jae Kyeong; Mo, Yeon-Gon; Kim, Hye Dong

    2007-05-01

    The authors report on the fabrication of thin film transistors (TFTs), which use an amorphous indium gallium zinc oxide (a-IGZO) channel, by rf sputtering at room temperature and for which the channel length and width are patterned by photolithography and dry etching. To prevent plasma damage to the active channel, a 100-nm-thick SiOx layer deposited by plasma enhanced chemical vapor deposition was adopted as an etch stopper structure. The a-IGZO TFT (W /L=10μm/50μm) fabricated on glass exhibited a high field-effect mobility of 35.8cm2/Vs, a subthreshold gate swing value of 0.59V/decade, a thrseshold voltage of 5.9V, and an Ion/off ratio of 4.9×106, which is acceptable for use as the switching transistor of an active-matrix TFT backplane.

  4. High mobility bottom gate InGaZnO thin film transistors with SiOx etch stopper

    International Nuclear Information System (INIS)

    Kim, Minkyu; Jeong, Jong Han; Lee, Hun Jung; Ahn, Tae Kyung; Shin, Hyun Soo; Park, Jin-Seong; Jeong, Jae Kyeong; Mo, Yeon-Gon; Kim, Hye Dong

    2007-01-01

    The authors report on the fabrication of thin film transistors (TFTs), which use an amorphous indium gallium zinc oxide (a-IGZO) channel, by rf sputtering at room temperature and for which the channel length and width are patterned by photolithography and dry etching. To prevent plasma damage to the active channel, a 100-nm-thick SiO x layer deposited by plasma enhanced chemical vapor deposition was adopted as an etch stopper structure. The a-IGZO TFT (W/L=10 μm/50 μm) fabricated on glass exhibited a high field-effect mobility of 35.8 cm 2 /V s, a subthreshold gate swing value of 0.59 V/decade, a thrseshold voltage of 5.9 V, and an I on/off ratio of 4.9x10 6 , which is acceptable for use as the switching transistor of an active-matrix TFT backplane

  5. Physicochemical characteristics of PFC surfactants for dry decontamination

    Energy Technology Data Exchange (ETDEWEB)

    Oh, Won Jin; Lee, Chi Woo [Korea University, Seoul (Korea)

    2001-04-01

    Even the trace amount of the used nuclear fuels of high radioactivity are hazardous to the earth and humans. Perfluorocarbons and perfluorocarbon surfactants are emerging to be efficient chemicals in the dry decontamination process of the used fuels of high radioactivity. The theme was undertaken to increase the knowledge on perfluorocarbon surfactants to develop the perfluorocarbon system in the dry decontamination process in Korea. Several cationic and anionic pfc surfactants were synthesized. Effects of pfc surfactants on electrochemical etching of silicon were investigated to form porous silicons. Forces were measured between silicon surfaces and AFM tip in the absence and presence of pfc surfactants. 7 refs., 10 figs. (Author)

  6. A nontransferring dry adhesive with hierarchical polymer nanohairs

    KAUST Repository

    Jeong, H. E.

    2009-03-20

    We present a simple yet robust method for fabricating angled, hierarchically patterned high-aspect-ratio polymer nanohairs to generate directionally sensitive dry adhesives. The slanted polymeric nanostructures were molded from an etched polySi substrate containing slanted nanoholes. An angled etching technique was developed to fabricate slanted nanoholes with flat tips by inserting an etch-stop layer of silicon dioxide. This unique etching method was equipped with a Faraday cage system to control the ion-incident angles in the conventional plasma etching system. The polymeric nanohairs were fabricated with tailored leaning angles, sizes, tip shapes, and hierarchical structures. As a result of controlled leaning angle and bulged flat top of the nanohairs, the replicated, slanted nanohairs showed excellent directional adhesion, exhibiting strong shear attachment (approximately 26 N/cm(2) in maximum) in the angled direction and easy detachment (approximately 2.2 N/cm(2)) in the opposite direction, with a hysteresis value of approximately 10. In addition to single scale nanohairs, monolithic, micro-nanoscale combined hierarchical hairs were also fabricated by using a 2-step UV-assisted molding technique. These hierarchical nanoscale patterns maintained their adhesive force even on a rough surface (roughness <20 microm) because of an increase in the contact area by the enhanced height of hierarchy, whereas simple nanohairs lost their adhesion strength. To demonstrate the potential applications of the adhesive patch, the dry adhesive was used to transport a large-area glass (47.5 x 37.5 cm(2), second-generation TFT-LCD glass), which could replace the current electrostatic transport/holding system with further optimization.

  7. A nontransferring dry adhesive with hierarchical polymer nanohairs.

    Science.gov (United States)

    Jeong, Hoon Eui; Lee, Jin-Kwan; Kim, Hong Nam; Moon, Sang Heup; Suh, Kahp Y

    2009-04-07

    We present a simple yet robust method for fabricating angled, hierarchically patterned high-aspect-ratio polymer nanohairs to generate directionally sensitive dry adhesives. The slanted polymeric nanostructures were molded from an etched polySi substrate containing slanted nanoholes. An angled etching technique was developed to fabricate slanted nanoholes with flat tips by inserting an etch-stop layer of silicon dioxide. This unique etching method was equipped with a Faraday cage system to control the ion-incident angles in the conventional plasma etching system. The polymeric nanohairs were fabricated with tailored leaning angles, sizes, tip shapes, and hierarchical structures. As a result of controlled leaning angle and bulged flat top of the nanohairs, the replicated, slanted nanohairs showed excellent directional adhesion, exhibiting strong shear attachment (approximately 26 N/cm(2) in maximum) in the angled direction and easy detachment (approximately 2.2 N/cm(2)) in the opposite direction, with a hysteresis value of approximately 10. In addition to single scale nanohairs, monolithic, micro-nanoscale combined hierarchical hairs were also fabricated by using a 2-step UV-assisted molding technique. These hierarchical nanoscale patterns maintained their adhesive force even on a rough surface (roughness <20 microm) because of an increase in the contact area by the enhanced height of hierarchy, whereas simple nanohairs lost their adhesion strength. To demonstrate the potential applications of the adhesive patch, the dry adhesive was used to transport a large-area glass (47.5 x 37.5 cm(2), second-generation TFT-LCD glass), which could replace the current electrostatic transport/holding system with further optimization.

  8. Can previous acid etching increase the bond strength of a self-etching primer adhesive to enamel?

    Directory of Open Access Journals (Sweden)

    Ana Paula Morales Cobra Carvalho

    2009-06-01

    Full Text Available Because a greater research effort has been directed to analyzing the adhesive effectiveness of self etch primers to dentin, the aim of this study was to evaluate, by microtensile testing, the bond strength to enamel of a composite resin combined with a conventional adhesive system or with a self-etching primer adhesive, used according to its original prescription or used with previous acid etching. Thirty bovine teeth were divided into 3 groups with 10 teeth each (n= 10. In one of the groups, a self-etching primer (Clearfil SE Bond - Kuraray was applied in accordance with the manufacturer's instructions and, in the other, it was applied after previous acid etching. In the third group, a conventional adhesive system (Scotchbond Multipurpose Plus - 3M-ESPE was applied in accordance with the manufacturer's instructions. The results obtained by analysis of variance revealed significant differences between the adhesive systems (F = 22.31. The self-etching primer (Clearfil SE Bond presented lower enamel bond strength values than the conventional adhesive system (Scotchbond Multipurpose Plus (m = 39.70 ± 7.07 MPa both when used according to the original prescription (m = 27.81 ± 2.64 MPa and with previous acid etching (m = 25.08 ± 4.92 MPa.

  9. Evaluation of Pentafluoroethane and 1,1-Difluoroethane for a Dielectric Etch Application in an Inductively Coupled Plasma Etch Tool

    Science.gov (United States)

    Karecki, Simon; Chatterjee, Ritwik; Pruette, Laura; Reif, Rafael; Sparks, Terry; Beu, Laurie; Vartanian, Victor

    2000-07-01

    In this work, a combination of two hydrofluorocarbon compounds, pentafluoroethane (FC-125, C2HF5) and 1,1-difluoroethane (FC-152a, CF2H-CH3), was evaluated as a potential replacement for perfluorocompounds in dielectric etch applications. A high aspect ratio oxide via etch was used as the test vehicle for this study, which was conducted in a commercial inductively coupled high density plasma etch tool. Both process and emissions data were collected and compared to those provided by a process utilizing a standard perfluorinated etch chemistry (C2F6). Global warming (CF4, C2F6, CHF3) and hygroscopic gas (HF, SiF4) emissions were characterized using Fourier transform infrared (FTIR) spectroscopy. FC-125/FC-152a was found to produce significant reductions in global warming emissions, on the order of 68 to 76% relative to the reference process. Although etch stopping, caused by a high degree of polymer deposition inside the etched features, was observed, process data otherwise appeared promising for an initial study, with good resist selectivity and etch rates being achieved.

  10. An In Vitro Evaluation of Leakage of Two Etch and Rinse and Two Self-Etch Adhesives after Thermocycling

    Science.gov (United States)

    Geerts, Sabine; Bolette, Amandine; Seidel, Laurence; Guéders, Audrey

    2012-01-01

    Our experiment evaluated the microleakage in resin composite restorations bonded to dental tissues with different adhesive systems. 40 class V cavities were prepared on the facial and lingual surfaces of each tooth with coronal margins in enamel and apical margins in cementum (root dentin). The teeth were restored with Z100 resin composite bonded with different adhesive systems: Scotchbond Multipurpose (SBMP), a 3-step Etch and Rinse adhesive, Adper Scotchbond 1 XT (SB1), a 2-step Etch and Rinse adhesive, AdheSE One (ADSE-1), a 1-step Self-Etch adhesive, and AdheSE (ADSE), a 2-step Self-Etch adhesive. Teeth were thermocycled and immersed in 50% silver nitrate solution. When both interfaces were considered, SBMP has exhibited significantly less microleakage than other adhesive systems (resp., for SB1, ADSE-1 and ADSE, P = 0.0007, P adhesives, microleakage was found greater at enamel than at dentin interfaces (for ADSE, P = 0.024 and for ADSE-1, P adhesive systems, there was no significant difference between enamel and dentin interfaces; (3) SBMP was found significantly better than other adhesives both at enamel and dentin interfaces. In our experiment Etch and Rinse adhesives remain better than Self-Etch adhesives at enamel interface. In addition, there was no statistical difference between 1-step (ADSE-1) and 2-step (ADSE) Self-Etch adhesives. PMID:22675358

  11. [Evaluation of shear bond strengths of self-etching and total-etching dental adhesives to enamel and dentin].

    Science.gov (United States)

    Yu, Ling; Liu, Jing-Ming; Wang, Xiao-Yan; Gao, Xue-Jun

    2009-03-01

    To evaluate the shear bond strengths of four dental adhesives in vitro. The facial surfaces of 20 human maxillary incisors were prepared to expose fresh enamel and randomly divided into four groups, in each group 5 teeth were bonded with one adhesives: group A (Clearfil Protect Bond, self-etching two steps), group B (Adper( Prompt, self-etching one step), group C (SwissTEC SL Bond, total-etching two steps), group D (Single Bond, total-etching two steps). Shear bond strengths were determined using an universal testing machine after being stored in distilled water for 24 h at 37 degrees C. The bond strengths to enamel and dentin were (25.33 +/- 2.84) and (26.07 +/- 5.56) MPa in group A, (17.08 +/- 5.13) and (17.93 +/- 4.70) MPa in group B, (33.14 +/- 6.05) and (41.92 +/- 6.25) MPa in group C, (22.51 +/- 6.25) and (21.45 +/- 7.34) MPa in group D. Group C showed the highest and group B the lowest shear bond strength to enamel and dentin among the four groups. The two-step self-etching adhesive showed comparable shear bond strength to some of the total-etching adhesives and higher shear bond strength than one-step self-etching adhesive.

  12. What Is Dry Eye?

    Medline Plus

    Full Text Available ... Ophthalmology/Strabismus Ocular Pathology/Oncology Oculoplastics/Orbit Refractive Management/Intervention Retina/Vitreous Uveitis Focus On ... Dry Eye Sections What Is Dry Eye? Dry Eye Symptoms Causes of ...

  13. Spatially-Resolved Ion Trajectory Measurements During Cl2 Reactive Ion Beam Etching and Ar Ion Beam Etching

    International Nuclear Information System (INIS)

    Vawter, G. Allen; Woodworth, Joseph R.; Zubrzycki, Walter J.

    1999-01-01

    The angle of ion incidence at the etched wafer location during RIBE and IBE using Cl 2 , Ar and O 2 ion beams has been characterized using an ion energy and angle analyzer. Effects of beam current and accelerator grid bias on beam divergence and the spatial uniformity of the spread of incident angles are measured. It is observed that increased total beam current can lead to reduced current density at the sample stage due to enhanced beam divergence at high currents. Results are related to preferred etch system design for uniform high-aspect-ratio etching across semiconductor wafers

  14. Single-Run Single-Mask Inductively-Coupled-Plasma Reactive-Ion-Etching Process for Fabricating Suspended High-Aspect-Ratio Microstructures

    Science.gov (United States)

    Yang, Yao-Joe; Kuo, Wen-Cheng; Fan, Kuang-Chao

    2006-01-01

    In this work, we present a single-run single-mask (SRM) process for fabricating suspended high-aspect-ratio structures on standard silicon wafers using an inductively coupled plasma-reactive ion etching (ICP-RIE) etcher. This process eliminates extra fabrication steps which are required for structure release after trench etching. Released microstructures with 120 μm thickness are obtained by this process. The corresponding maximum aspect ratio of the trench is 28. The SRM process is an extended version of the standard process proposed by BOSCH GmbH (BOSCH process). The first step of the SRM process is a standard BOSCH process for trench etching, then a polymer layer is deposited on trench sidewalls as a protective layer for the subsequent structure-releasing step. The structure is released by dry isotropic etching after the polymer layer on the trench floor is removed. All the steps can be integrated into a single-run ICP process. Also, only one mask is required. Therefore, the process complexity and fabrication cost can be effectively reduced. Discussions on each SRM step and considerations for avoiding undesired etching of the silicon structures during the release process are also presented.

  15. The effect of aberrated recording beams on reflecting Bragg gratings

    Science.gov (United States)

    SeGall, Marc; Ott, Daniel; Divliansky, Ivan; Glebov, Leonid B.

    2013-03-01

    The effect of aberrations present in the recording beams of a holographic setup is discussed regarding the period and spectral response of a reflecting volume Bragg grating. Imperfect recording beams result in spatially varying resonant wavelengths and the side lobes of the spectrum are washed out. Asymmetrical spectra, spectral broadening, and a reduction in peak diffraction efficiency may also be present, though these effects are less significant for gratings with wider spectral widths. Reflecting Bragg gratings (RBGs) are used as elements in a variety of applications including spectral beam combining1,2, mode locking3,4, longitudinal and transverse mode selection in lasers5,6, and sensing7,8. For applications requiring narrow spectral selectivity9, or large apertures10, these gratings must have a uniform period throughout the length of the recording medium, which may be on the order of millimeters. However, when using typical recording techniques such as two-beam interference for large aperture gratings and phase-mask recording of fiber gratings, aberrations from the optical elements in the system result in an imperfect grating structure11-13. In this paper we consider the effects of aberrations on large aperture gratings recorded in thick media using the two-beam interference technique. Previous works in analyzing the effects of aberrations have considered the effects of aberrations in a single recording plane where the beams perfectly overlap. Such an approach is valid for thin media (on the order of tens of microns), but for thick recording media (on the order of several millimeters) there will be a significant shift in the positions of the beams relative to each other as they traverse the recording medium. Therefore, the fringe pattern produced will not be constant throughout the grating if one or both beams have a non-uniform wavefront. Such non-uniform gratings may have a wider spectral width, a shifted resonant wavelength, or other problems. It is

  16. Bond efficacy and interface morphology of self-etching adhesives to ground enamel

    NARCIS (Netherlands)

    Abdalla, A.I.; El Zohairy, A.A.; Mohsen, M.M.A.; Feilzer, A.J.

    2010-01-01

    Purpose: This study compared the microshear bond strengths to ground enamel of three one-step self-etching adhesive systems, a self-etching primer system and an etch-and-rinse adhesive system. Materials and Methods: Three self-etching adhesives, Futurabond DC (Voco), Clearfil S Tri Bond (Kuraray)

  17. Electronegativity-dependent tin etching from thin films

    Energy Technology Data Exchange (ETDEWEB)

    Pachecka, M., E-mail: m.pachecka@utwente.nl; Sturm, J. M.; Kruijs, R. W. E. van de; Lee, C. J.; Bijkerk, F. [Industrial Focus Group XUV Optics, MESA+ Institute for Nanotechnology, University of Twente, Drienerlolaan 5, Enschede (Netherlands)

    2016-07-15

    The influence of a thin film substrate material on the etching of a thin layer of deposited tin (Sn) by hydrogen radicals was studied. The amount of remaining Sn was quantified for materials that cover a range of electronegativities. We show that, for metals, etching depends on the relative electronegativity of the surface material and Sn. Tin is chemically etched from surfaces with an electronegativity smaller than Sn, while incomplete Sn etching is observed for materials with an electronegativity larger than Sn. Furthermore, the amount of remaining Sn increases as the electronegativity of the surface material increases. We speculate, that, due to Fermi level differences in the material’s electronic structure, the energy of the two conduction bands shift such that the availability of electrons for binding with hydrogen is significantly reduced.

  18. Summary of Chalcogenide Glass Processing: Wet-Etching and Photolithography

    Energy Technology Data Exchange (ETDEWEB)

    Riley, Brian J.; Sundaram, S. K.; Johnson, Bradley R.; Saraf, Laxmikant V.

    2006-12-01

    This report describes a study designed to explore the different properties of two different chalcogenide materials, As2S3 and As24S38Se38, when subjected to photolithographic wet-etching techniques. Chalcogenide glasses are made by combining chalcogen elements S, Se, and Te with Group IV and/or V elements. The etchant was selected from the literature and was composed of sodium hydroxide, isopropyl alcohol, and deionized water and the types of chalcogenide glass for study were As2S3 and As24S38Se38. The main goals here were to obtain a single variable etch rate curve of etch depth per time versus NaOH overall solution concentration in M and to see the difference in etch rate between a given etchant when used on the different chalcogenide stoichiometries. Upon completion of these two goals, future studies will begin to explore creating complex, integrated photonic devices via these methods.

  19. Dynamic Wet Etching of Silicon through Isopropanol Alcohol Evaporation

    Directory of Open Access Journals (Sweden)

    Tiago S. Monteiro

    2015-10-01

    Full Text Available In this paper, Isopropanol (IPA availability during the anisotropic etching of silicon in Potassium Hydroxide (KOH solutions was investigated. Squares of 8 to 40 µm were patterned to (100 oriented silicon wafers through DWL (Direct Writing Laser photolithography. The wet etching process was performed inside an open HDPE (High Density Polyethylene flask with ultrasonic agitation. IPA volume and evaporation was studied in a dynamic etching process, and subsequent influence on the silicon etching was inspected. For the tested conditions, evaporation rates for water vapor and IPA were determined as approximately 0.0417 mL/min and 0.175 mL/min, respectively. Results demonstrate that IPA availability, and not concentration, plays an important role in the definition of the final structure. Transversal SEM (Scanning Electron Microscopy analysis demonstrates a correlation between microloading effects (as a consequence of structure spacing and the angle formed towards the (100 plane.

  20. Etching properties of BLT films in CF4/Ar plasma

    International Nuclear Information System (INIS)

    Kim, Dong Pyo; Kim, Kyoung Tae; Kim, Chang Il

    2003-01-01

    CF 4 /Ar plasma mass content and etching rate behavior of BLT thin films were investigated in inductively coupled plasma (ICP) reactor as functions of CF 4 /Ar gas mixing ratio, rf power, and dc bias voltage. The variation of relative volume densities for F and Ar atoms were measured by the optical emission spectroscopy (OES). The etching rate as functions of Ar content showed the maximum of 803 A/min at 80 % Ar addition into CF 4 plasma. The presence of maximum etch rate may be explained by the concurrence of two etching mechanisms such as physical sputtering and chemical reaction. The role of Ar ion bombardment includes destruction of metal (Bi, La, Ti)-O bonds as well as support of chemical reaction of metals with fluorine atoms

  1. What's new in dentine bonding? Self-etch adhesives.

    Science.gov (United States)

    Burke, F J Trevor

    2004-12-01

    Bonding to dentine is an integral part of contemporary restorative dentistry, but early systems were not user-friendly. The introduction of new systems which have a reduced number of steps--the self-etch adhesives--could therefore be an advantage to clinicians, provided that they are as effective as previous adhesives. These new self-etch materials appear to form hybrid layers as did the previous generation of materials. However, there is a need for further clinical research on these new materials. Advantages of self-etch systems include, no need to etch and rinse, reduced post-operative sensitivity and low technique sensitivity. Disadvantages include, the inhibition of set of self- or dual-cure resin materials and the need to roughen untreated enamel surfaces prior to bonding.

  2. In situ ion etching in a scanning electron microscope

    International Nuclear Information System (INIS)

    Dhariwal, R.S.; Fitch, R.K.

    1977-01-01

    A facility for ion etching in a scanning electron microscope is described which incorporates a new type of electrostatic ion source and viewing of the specimen is possible within about 30 sec after terminating the ion bombardment. Artefacts produced during etching have been studied and cone formation has been followed during its growth. The instrument has provided useful structural information on metals, alloys, and sinters. However, although insulating materials, such as plastics, glass and resins, have been successfully etched, interpretation of the resultant micrographs is more difficult. Ion etching of soft biological tissues, such as the rat duodenum was found to be of considerable interest. The observed structural features arise from the selective intake of the heavy fixation elements by different parts of the tissue. Hard biological materials, such as dental tissues and restorative materials, have also been studied and the prismatic structure of the enamel and the form and distribution of the dentinal tubules have been revealed. (author)

  3. Impact of electron irradiation on particle track etching response in ...

    Indian Academy of Sciences (India)

    energy by an ionizing particle traversing a material medium. When the ... Their amorphous nature and radiation sensitivity further ... The samples were washed thoroughly in lukewarm soap solution to avoid non-uniformity in etching due to ...

  4. GaN Nanowires Synthesized by Electroless Etching Method

    KAUST Repository

    Najar, Adel; Anjum, Dalaver H.; Ng, Tien Khee; Ooi, Boon S.; Ben Slimane, Ahmed

    2012-01-01

    Ultra-long Gallium Nitride Nanowires is synthesized via metal-electroless etching method. The morphologies and optical properties of GaN NWs show a single crystal GaN with hexagonal Wurtzite structure and high luminescence properties.

  5. Enhanced photoluminescence from porous silicon by hydrogen-plasma etching

    International Nuclear Information System (INIS)

    Wang, Q.; Gu, C.Z.; Li, J.J.; Wang, Z.L.; Shi, C.Y.; Xu, P.; Zhu, K.; Liu, Y.L.

    2005-01-01

    Porous silicon (PS) was etched by hydrogen plasma. On the surface a large number of silicon nanocone arrays and nanocrystallites were formed. It is found that the photoluminescence of the H-etched porous silicon is highly enhanced. Correspondingly, three emission centers including red, green, and blue emissions are shown to contribute to the enhanced photoluminescence of the H-etched PS, which originate from the recombination of trapped electrons with free holes due to Si=O bonding at the surface of the silicon nanocrystallites, the quantum size confinement effect, and oxygen vacancy in the surface SiO 2 layer, respectively. In particular, the increase of SiO x (x<2) formed on the surface of the H-etched porous silicon plays a very important role in enhancing the photoluminescence properties

  6. Erbium doped stain etched porous silicon

    International Nuclear Information System (INIS)

    Gonzalez-Diaz, B.; Diaz-Herrera, B.; Guerrero-Lemus, R.; Mendez-Ramos, J.; Rodriguez, V.D.; Hernandez-Rodriguez, C.; Martinez-Duart, J.M.

    2008-01-01

    In this work a simple erbium doping process applied to stain etched porous silicon layers (PSLs) is proposed. This doping process has been developed for application in porous silicon solar cells, where conventional erbium doping processes are not affordable because of the high processing cost and technical difficulties. The PSLs were formed by immersion in a HF/HNO 3 solution to properly adjust the porosity and pore thickness to an optimal doping of the porous structure. After the formation of the porous structure, the PSLs were analyzed by means of nitrogen BET (Brunauer, Emmett and Teller) area measurements and scanning electron microscopy. Subsequently, the PSLs were immersed in a saturated erbium nitrate solution in order to cover the porous surface. Then, the samples were subjected to a thermal process to activate the Er 3+ ions. Different temperatures and annealing times were used in this process. The photoluminescence of the PSLs was evaluated before and after the doping processes and the composition was analyzed by Fourier transform IR spectroscopy

  7. Induction of Micronuclei in Human Fibroblasts across the Bragg Curve of Energetic Si and Fe Ions

    Science.gov (United States)

    Wu, H.; Rusek, A.; Hada, M.

    2006-01-01

    The space environment consists of a varying field of radiation particles including high-energy ions, with spacecraft shielding material providing the major protection to astronauts from harmful exposure. Unlike low-LET gamma or X-rays, the presence of shielding does not always reduce the radiation risks for energetic charged particle exposure. Since the dose delivered by the charged particle increases sharply as the particle approaches the end of its range, a position known as the Bragg peak, the Bragg curve does not necessarily represent the biological damage along the particle traversal since biological effects are influenced by the track structure of both primary and secondary particles. Therefore, the biological Bragg curve is dependent on the energy and the type of the primary particle, and may vary for different biological endpoints. We studied micronuclei (MN) induction across the Bragg curve of Si and Fe ions at incident energies of 300 MeV/nucleon and 1 GeV/nucleon. A quantitative biological response curve did not reveal an increased yield of MN at the location of the Bragg peak. However, the ratio of mono- to bi-nucleated cells, which indicates inhibition in cell progression, increased at the Bragg peak location. These results confirm the hypothesis that severely damaged cells at the Bragg peak are likely to go through reproduction death.

  8. Laterally coupled distributed feedback lasers emitting at 2 μm with quantum dash active region and high-duty-cycle etched semiconductor gratings

    Science.gov (United States)

    Papatryfonos, Konstantinos; Saladukha, Dzianis; Merghem, Kamel; Joshi, Siddharth; Lelarge, Francois; Bouchoule, Sophie; Kazazis, Dimitrios; Guilet, Stephane; Le Gratiet, Luc; Ochalski, Tomasz J.; Huyet, Guillaume; Martinez, Anthony; Ramdane, Abderrahim

    2017-02-01

    Single-mode diode lasers on an InP(001) substrate have been developed using InAs/In0.53Ga0.47As quantum dash (Qdash) active regions and etched lateral Bragg gratings. The lasers have been designed to operate at wavelengths near 2 μm and exhibit a threshold current of 65 mA for a 600 μm long cavity, and a room temperature continuous wave output power per facet >5 mW. Using our novel growth approach based on the low ternary In0.53Ga0.47As barriers, we also demonstrate ridge-waveguide lasers emitting up to 2.1 μm and underline the possibilities for further pushing the emission wavelength out towards longer wavelengths with this material system. By introducing experimentally the concept of high-duty-cycle lateral Bragg gratings, a side mode suppression ratio of >37 dB has been achieved, owing to an appreciably increased grating coupling coefficient of κ ˜ 40 cm-1. These laterally coupled distributed feedback (LC-DFB) lasers combine the advantage of high and well-controlled coupling coefficients achieved in conventional DFB lasers, with the regrowth-free fabrication process of lateral gratings, and exhibit substantially lower optical losses compared to the conventional metal-based LC-DFB lasers.

  9. Organization of silicon nanocrystals by localized electrochemical etching

    International Nuclear Information System (INIS)

    Ayari-Kanoun, Asma; Drouin, Dominique; Beauvais, Jacques; Lysenko, Vladimir; Nychyporuk, Tetyana; Souifi, Abdelkader

    2009-01-01

    An approach to form a monolayer of organized silicon nanocrystals on a monocrystalline Si wafer is reported. Ordered arrays of nanoholes in a silicon nitride layer were obtained by combining electron beam lithography and plasma etching. Then, a short electrochemical etching current pulse led to formation of a single Si nanocrystal per each nanohole. As a result, high quality silicon nanocrystal arrays were formed with well controlled and reproducible morphologies. In future, this approach can be used to fabricate single electron devices.

  10. Quantum-size-controlled photoelectrochemical etching of semiconductor nanostructures

    Science.gov (United States)

    Fischer, Arthur J.; Tsao, Jeffrey Y.; Wierer, Jr., Jonathan J.; Xiao, Xiaoyin; Wang, George T.

    2016-03-01

    Quantum-size-controlled photoelectrochemical (QSC-PEC) etching provides a new route to the precision fabrication of epitaxial semiconductor nanostructures in the sub-10-nm size regime. For example, quantum dots (QDs) can be QSC-PEC-etched from epitaxial InGaN thin films using narrowband laser photoexcitation, and the QD sizes (and hence bandgaps and photoluminescence wavelengths) are determined by the photoexcitation wavelength.

  11. Note: Electrochemical etching of cylindrical nanoprobes using a vibrating electrolyte

    International Nuclear Information System (INIS)

    Wang, Yufeng; Zeng, Yongbin; Qu, Ningsong; Zhu, Di

    2015-01-01

    An electrochemical etching process using a vibrating electrolyte of potassium hydroxide to prepare tungsten cylindrical nanotips is developed. The vibrating electrolyte eases the effects of a diffusion layer and extends the etching area, which aid in the production of cylindrical nanotips. Larger amplitudes and a vibration frequency of 35 Hz are recommended for producing cylindrical nanotips. Nanotips with a tip radius of approximately 43 nm and a conical angle of arctan 0.0216 are obtained

  12. Energy dependence of fast neutron dosimetry using electrochemical etching

    International Nuclear Information System (INIS)

    Su, S.J.; Morgan, K.Z.

    1978-01-01

    Registration of fast-neutron induced recoil tracks by the electrochemical etching technique as applied to sensitive Lexan polycarbonate foils provides a simple and inexpensive means of fast neutron personnel dosimetry. The sensitivity (tracks/neutron) of recoil particle registration is given as a function of neutron energy. Neutrons of 7 Li (p,n) 7 Be, 3 T (d,n) 4 He and 9 B, respectively. Results are compared with other studies using other neutron sources and conventional etching method

  13. Microdroplet-etched highly birefringent low-loss fiber tapers.

    Science.gov (United States)

    Mikkelsen, Jared C; Poon, Joyce K S

    2012-07-01

    We use hydrofluoric acid microdroplets to directly etch highly birefringent biconical fiber tapers from standard single-mode fibers. The fiber tapers have micrometer-sized cross sections, which are controlled by the etching condition. The characteristic teardrop cross section leads to a high group birefringence of B(G)≈0.017 and insertion losses <0.7 dB over waist lengths of about 2.1 mm.

  14. Comparison of enamel bond fatigue durability between universal adhesives and two-step self-etch adhesives: Effect of phosphoric acid pre-etching.

    Science.gov (United States)

    Suda, Shunichi; Tsujimoto, Akimasa; Barkmeier, Wayne W; Nojiri, Kie; Nagura, Yuko; Takamizawa, Toshiki; Latta, Mark A; Miyazaki, Masashi

    2018-03-30

    The effect of phosphoric acid pre-etching on enamel bond fatigue durability of universal adhesives and two-step self-etch adhesives was investigated. Four universal adhesives and three two-step self-etch adhesives were used. The initial shear bond strengths and shear fatigue strengths to enamel with and without phosphoric acid pre-etching using the adhesives were determined. SEM observations were also conducted. Phosphoric acid pre-etching of enamel was found to increase the bond fatigue durability of universal adhesives, but its effect on two-step self-etch adhesives was material-dependent. In addition, some universal adhesives with phosphoric acid pre-etching showed similar bond fatigue durability to the two-step self-etch adhesives, although the bond fatigue durability of universal adhesives in self-etch mode was lower than that of the two-step self-etch adhesives. Phosphoric acid pre-etching enhances enamel bond fatigue durability of universal adhesives, but the effect of phosphoric acid pre-etching on the bond fatigue durability of two-step self-etch adhesives was material-dependent.

  15. Metallographic examination of TD-nickel base alloys. [thermal and chemical etching technique evaluation

    Science.gov (United States)

    Kane, R. D.; Petrovic, J. J.; Ebert, L. J.

    1975-01-01

    Techniques are evaluated for chemical, electrochemical, and thermal etching of thoria dispersed (TD) nickel alloys. An electrochemical etch is described which yielded good results only for large grain sizes of TD-nickel. Two types of thermal etches are assessed for TD-nickel: an oxidation etch and vacuum annealing of a polished specimen to produce an etch. It is shown that the first etch was somewhat dependent on sample orientation with respect to the processing direction, the second technique was not sensitive to specimen orientation or grain size, and neither method appear to alter the innate grain structure when the materials were fully annealed prior to etching. An electrochemical etch is described which was used to observe the microstructures in TD-NiCr, and a thermal-oxidation etch is shown to produce better detail of grain boundaries and to have excellent etching behavior over the entire range of grain sizes of the sample.

  16. Flood scour monitoring system using fiber Bragg grating sensors

    Science.gov (United States)

    Lin, Yung Bin; Lai, Jihn Sung; Chang, Kuo Chun; Li, Lu Sheng

    2006-12-01

    The exposure and subsequent undermining of pier/abutment foundations through the scouring action of a flood can result in the structural failure of a bridge. Bridge scour is one of the leading causes of bridge failure. Bridges subject to periods of flood/high flow require monitoring during those times in order to protect the traveling public. In this study, an innovative scour monitoring system using button-like fiber Bragg grating (FBG) sensors was developed and applied successfully in the field during the Aere typhoon period in 2004. The in situ FBG scour monitoring system has been demonstrated to be robust and reliable for real-time scour-depth measurements, and to be valid for indicating depositional depth at the Dadu Bridge. The field results show that this system can function well and survive a typhoon flood.

  17. Moiré volume Bragg grating filter with tunable bandwidth.

    Science.gov (United States)

    Mokhov, Sergiy; Ott, Daniel; Divliansky, Ivan; Zeldovich, Boris; Glebov, Leonid

    2014-08-25

    We propose a monolithic large-aperture narrowband optical filter based on a moiré volume Bragg grating formed by two sequentially recorded gratings with slightly different resonant wavelengths. Such recording creates a spatial modulation of refractive index with a slowly varying sinusoidal envelope. By cutting a specimen at a small angle, to a thickness of one-period of this envelope, the longitudinal envelope profile will shift from a sine profile to a cosine profile across the face of the device. The transmission peak of the filter has a tunable bandwidth while remaining at a fixed resonant wavelength by a transversal shift of incidence position. Analytical expressions for the tunable bandwidth of such a filter are calculated and experimental data from a filter operating at 1064 nm with bandwidth range 30-90 pm is demonstrated.

  18. A fiber Bragg grating acceleration sensor for ground surveillance

    Science.gov (United States)

    Jiang, Shaodong; Zhang, Faxiang; Lv, Jingsheng; Ni, Jiasheng; Wang, Chang

    2017-10-01

    Ground surveillance system is a kind of intelligent monitoring equipment for detecting and tracking the ground target. This paper presents a fiber Bragg grating (FBG) acceleration sensor for ground surveillance, which has the characteristics of no power supply, anti-electromagnetic interference, easy large-scale networking, and small size. Which make it able to achieve the advantage of the ground surveillance system while avoiding the shortcoming of the electric sensing. The sensor has a double cantilever beam structure with a sensitivity of 1000 pm/g. Field experiment has been carried out on a flood beach to examine the sensor performance. The result shows that the detection distance on the walking of personnel reaches 70m, and the detection distance on the ordinary motor vehicle reaches 200m. The performance of the FBG sensor can satisfy the actual needs of the ground surveillance system.

  19. Monitoring Bridge Dynamic Responses Using Fiber Bragg Grating Tiltmeters.

    Science.gov (United States)

    Xiao, Feng; Chen, Gang S; Hulsey, J Leroy

    2017-10-20

    In bridge health monitoring, tiltmeters have been used for measuring rotation and curvature; however, their application in dynamic parameter identification has been lacking. This study installed fiber Bragg grating (FBG) tiltmeters on the bearings of a bridge and monitored the dynamic rotational angle. The dynamic features, including natural frequencies and mode shapes, have been identified successfully. The innovation presented in this paper is the first-time use of FBG tiltmeter readings to identify the natural frequencies of a long-span steel girder bridge. The identified results have been verified using a bridge finite element model. This paper introduces a new method for the dynamic monitoring of a bridge using FBG tiltmeters. Limitations and future research directions are also discussed in the conclusion.

  20. Three-axis force sensor with fiber Bragg grating.

    Science.gov (United States)

    Hyundo Choi; Yoan Lim; Junhyung Kim

    2017-07-01

    Haptic feedback is critical for many surgical tasks, and it replicates force reflections at the surgical site. To meet the force reflection requirements, we propose a force sensor with an optical fiber Bragg grating (FBG) for robotic surgery. The force sensor can calculate three directional forces of an instrument from the strain of three FBGs, even under electromagnetic interference. A flexible ring-shape structure connects an instrument tip and fiber strain gages to sense three directional force. And a stopper mechanism is added in the structure to avoid plastic deformation under unexpected large force on the instrument tip. The proposed sensor is experimentally verified to have a sensing range from -12 N to 12 N, and its sensitivity was less than 0.06 N.

  1. Remote (250 km Fiber Bragg Grating Multiplexing System

    Directory of Open Access Journals (Sweden)

    Manuel Lopez-Amo

    2011-09-01

    Full Text Available We propose and demonstrate two ultra-long range fiber Bragg grating (FBG sensor interrogation systems. In the first approach four FBGs are located 200 km from the monitoring station and a signal to noise ratio of 20 dB is obtained. The second improved version is able to detect the four multiplexed FBGs placed 250 km away, offering a signal to noise ratio of 6–8 dB. Consequently, this last system represents the longest range FBG sensor system reported so far that includes fiber sensor multiplexing capability. Both simple systems are based on a wavelength swept laser to scan the reflection spectra of the FBGs, and they are composed by two identical-lengths optical paths: the first one intended to launch the amplified laser signal by means of Raman amplification and the other one is employed to guide the reflection signal to the reception system.

  2. Dynamic and static strain gauge using superimposed fiber Bragg gratings

    International Nuclear Information System (INIS)

    Ma, Y C; Yang, Y H; Yang, M W; Li, J M; Tang, J; Liang, T

    2012-01-01

    This paper demonstrates a simple and fast interrogation method for the dynamic and/or static strain gauge using a reflection spectrum from two superimposed fiber Bragg gratings (FBGs). The superimposed FBGs are designed to decrease nonequidistant space of generated a sensing pulse train in a time domain during dynamic strain gauge. By combining centroid finding with smooth filtering methods, both the interrogation speed and accuracy are improved. A four times increase in the interrogation speed of dynamic strain, by generating a 2 kHz optical sensing pulse train from a 500 Hz scanning frequency, is demonstrated experimentally. The interrogation uncertainty and total harmonic distortion characterization of superimposed FBGs are tested and less than 4 pm standard deviation is obtained. (paper)

  3. Humidity insensitive TOPAS polymer fiber Bragg grating sensor

    DEFF Research Database (Denmark)

    Yuan, Scott Wu; Khan, Lutul; Webb, David J.

    2011-01-01

    We report the first experimental demonstration of a humidity insensitive polymer optical fiber Bragg grating (FBG), as well as the first FBG recorded in a TOPAS polymer optical fiber in the important low loss 850nm spectral region. For the demonstration we have fabricated FBGs with resonance...... wavelength around 850 nm and 1550 nm in single-mode microstructured polymer optical fibers made of TOPAS and the conventional poly (methyl methacrylate) (PMMA). Characterization of the FBGs shows that the TOPAS FBG is more than 50 times less sensitive to humidity than the conventional PMMA FBG in both...... wavelength regimes. This makes the TOPAS FBG very appealing for sensing applications as it appears to solve the humidity sensitivity problem suffered by the PMMA FBG....

  4. Bragg crystal spectroscopy on the OSO 8 satellite

    Science.gov (United States)

    Long, K. S.; Chanan, G. A.; Helfand, D. J.; Ku, W. H.-M.; Novick, R.

    1979-01-01

    Results are reported for high-resolution OSO 8 Bragg-crystal spectroscopy of a variety of cosmic X-ray sources in the energy range from 2 to 10 keV. A continuous spectrum of Sco X-1 is examined, and results of a search for narrow line emission due to iron near 6.7 keV are presented for 32 galactic X-ray sources, including Sco X-1, Cyg X-3, and Cen X-3. It is noted that the strongest evidence for iron line emission has been obtained for Cyg X-3 and that evidence for an iron line feature has also been found in the spectrum of Cen X-3.

  5. Enhanced sensitivity fibre Bragg grating (FBG) load sensor

    International Nuclear Information System (INIS)

    Correia, Ricardo; Chehura, Edmon; Li, Jin; James, Stephen W; Tatam, Ralph P

    2010-01-01

    The characterization of a load sensor based on the transverse loading of a subsection of a fibre Bragg grating (FBG) embedded within a cube of epoxy resin is presented. When the epoxy resin cube is loaded transverse to the axis of the fibre, its deformation transduces the load to a strain along the axis of the optical fibre, which changes the period of the embedded section of the FBG. This creates a spectral dropout within the bandwidth of the FBG, with an absolute wavelength that is linearly dependent on the applied load. This technique enhances the sensitivity of the FBG to transverse loading by a factor of 15, to 2.9 × 10 −2 ± 0.01 nm N −1 , when compared to the direct transverse loading of a bare fibre, and also protects the fibre from mechanical damage at the loading point

  6. Monitoring Bridge Dynamic Responses Using Fiber Bragg Grating Tiltmeters

    Directory of Open Access Journals (Sweden)

    Feng Xiao

    2017-10-01

    Full Text Available In bridge health monitoring, tiltmeters have been used for measuring rotation and curvature; however, their application in dynamic parameter identification has been lacking. This study installed fiber Bragg grating (FBG tiltmeters on the bearings of a bridge and monitored the dynamic rotational angle. The dynamic features, including natural frequencies and mode shapes, have been identified successfully. The innovation presented in this paper is the first-time use of FBG tiltmeter readings to identify the natural frequencies of a long-span steel girder bridge. The identified results have been verified using a bridge finite element model. This paper introduces a new method for the dynamic monitoring of a bridge using FBG tiltmeters. Limitations and future research directions are also discussed in the conclusion.

  7. Contact microphone using optical fibre Bragg grating technology

    International Nuclear Information System (INIS)

    Bezombes, F A; Lalor, M J; Burton, D R

    2007-01-01

    A contact microphone using optical fibre Bragg grating has been developed. It enables one to listen and record a human voice and/or breathing by monitoring the vibration generated by the outer wall of the throat during speech. This system can have many applications such as detecting defects in vocal folds, measuring and monitoring the vibration and defection generated by intubations of a patient throat and other voice related problem, low level speaking recording and transmitting is also possible, the microphone can be also used to monitor breathing and the system can be used as a microphone in very harsh environments for example it would allow one to hear the patient during a cat scan

  8. Fiber Bragg grating sensor interrogators on chip: challenges and opportunities

    Science.gov (United States)

    Marin, Yisbel; Nannipieri, Tiziano; Oton, Claudio J.; Di Pasquale, Fabrizio

    2017-04-01

    In this paper we present an overview of the current efforts towards integration of Fiber Bragg Grating (FBG) sensor interrogators. Different photonic integration platforms will be discussed, including monolithic planar lightwave circuit technology, silicon on insulator (SOI), indium phosphide (InP) and gallium arsenide (GaAs) material platforms. Also various possible techniques for wavelength metering and methods for FBG multiplexing will be discussed and compared in terms of resolution, dynamic performance, multiplexing capabilities and reliability. The use of linear filters, array waveguide gratings (AWG) as multiple linear filters and AWG based centroid signal processing techniques will be addressed as well as interrogation techniques based on tunable micro-ring resonators and Mach-Zehnder interferometers (MZI) for phase sensitive detection. The paper will also discuss the challenges and perspectives of photonic integration to address the increasing requirements of several industrial applications.

  9. A magnetostrictive composite-fiber Bragg Grating sensor.

    Science.gov (United States)

    Quintero, Sully M M; Braga, Arthur M B; Weber, Hans I; Bruno, Antonio C; Araújo, Jefferson F D F

    2010-01-01

    This paper presents a light and compact optical fiber Bragg Grating sensor for DC and AC magnetic field measurements. The fiber is coated by a thick layer of a magnetostrictive composite consisting of particles of Terfenol-D dispersed in a polymeric matrix. Among the different compositions for the coating that were tested, the best magnetostrictive response was obtained using an epoxy resin as binder and a 30% volume fraction of Terfenol-D particles with sizes ranging from 212 to 300 μm. The effect of a compressive preload in the sensor was also investigated. The achieved resolution was 0.4 mT without a preload or 0.3 mT with a compressive pre-stress of 8.6 MPa. The sensor was tested at magnetic fields of up to 750 mT under static conditions. Dynamic measurements were conducted with a magnetic unbalanced four-pole rotor.

  10. A Magnetostrictive Composite-Fiber Bragg Grating Sensor

    Directory of Open Access Journals (Sweden)

    Jefferson F. D. F. Araújo

    2010-08-01

    Full Text Available This paper presents a light and compact optical fiber Bragg Grating sensor for DC and AC magnetic field measurements. The fiber is coated by a thick layer of a magnetostrictive composite consisting of particles of Terfenol-D dispersed in a polymeric matrix. Among the different compositions for the coating that were tested, the best magnetostrictive response was obtained using an epoxy resin as binder and a 30% volume fraction of Terfenol-D particles with sizes ranging from 212 to 300 µm. The effect of a compressive preload in the sensor was also investigated. The achieved resolution was 0.4 mT without a preload or 0.3 mT with a compressive pre-stress of 8.6 MPa. The sensor was tested at magnetic fields of up to 750 mT under static conditions. Dynamic measurements were conducted with a magnetic unbalanced four-pole rotor

  11. Transversely coupled Fabry-Perot resonators with Bragg grating reflectors.

    Science.gov (United States)

    Saber, Md Ghulam; Wang, Yun; El-Fiky, Eslam; Patel, David; Shahriar, Kh Arif; Alam, Md Samiul; Jacques, Maxime; Xing, Zhenping; Xu, Luhua; Abadía, Nicolás; Plant, David V

    2018-01-01

    We design and demonstrate Fabry-Perot resonators with transverse coupling using Bragg gratings as reflectors on the silicon-on-insulator (SOI) platform. The effects of tailoring the cavity length and the coupling coefficient of the directional coupler on the spectral characteristics of the device are studied. The fabricated resonators achieved an extinction ratio (ER) of 37.28 dB and a Q-factor of 3356 with an effective cavity length of 110 μm, and an ER of 8.69 dB and a Q-factor of 23642 with a 943 μm effective cavity length. The resonator structure presented here has the highest reported ER on SOI and provides additional degrees of freedom compared to an all-pass ring resonator to tune the spectral characteristics.

  12. Temperature-insensitive fiber Bragg grating dynamic pressure sensing system.

    Science.gov (United States)

    Guo, Tuan; Zhao, Qida; Zhang, Hao; Zhang, Chunshu; Huang, Guiling; Xue, Lifang; Dong, Xiaoyi

    2006-08-01

    Temperature-insensitive dynamic pressure measurement using a single fiber Bragg grating (FBG) based on reflection spectrum bandwidth modulation and optical power detection is proposed. A specifically designed double-hole cantilever beam is used to provide a pressure-induced axial strain gradient along the sensing FBG and is also used to modulate the reflection bandwidth of the grating. The bandwidth modulation is immune to spatially uniform temperature effects, and the pressure can be unambiguously determined by measuring the reflected optical power, avoiding the complex wavelength interrogation system. The system acquisition time is up to 85 Hz for dynamic pressure measurement, and the thermal fluctuation is kept less than 1.2% full-scale for a temperature range of -10 degrees C to 80 degrees C.

  13. Fibre Bragg grating based accelerometer with extended bandwidth

    International Nuclear Information System (INIS)

    Basumallick, Nandini; Biswas, Palas; Dasgupta, Kamal; Bandyopadhyay, Somnath; Chakraborty, Rajib; Chakraborty, Sushanta

    2016-01-01

    We have shown experimentally that the operable bandwidth of a fibre Bragg grating (FBG) based accelerometer can be extended significantly, without compromising its sensitivity, using a post-signal processing technique which involves frequency domain weighting. It has been demonstrated that using the above technique acceleration can be correctly interpreted even when the operating frequency encroaches on the region where the frequency response of the sensor is non-uniform. Two different excitation signals, which we often encounter in structural health monitoring applications, e.g. (i) a signal composed of multi-frequency components and (ii) a sinusoidal excitation with a frequency sweep, have been considered in our experiment. The results obtained have been compared with a piezo accelerometer. (paper)

  14. Dense Wavelength Division (De Multiplexers Based on Fiber Bragg Gratings

    Directory of Open Access Journals (Sweden)

    S. BENAMEUR

    2014-05-01

    Full Text Available This study is to measure the impact of demultiplexers based on Fiber Bragg Grating (FBG filter on performance of DWDM system for optical access network. An optical transmission link has been established in which we have inserted a demultiplexer based on four different FBG filters. The first step will be the characterization of FBG’s filters (i.e. uniform FBG, Gaussian apodized Grating, chirped FBG to explain their behavior in the optical link. The simulations were conducted for different fiber’s lengths, filter bandwidth and different received power to get the best system performance. This helped to assess their impact on the link performance in terms of Bit Error Rate (BER.

  15. Bond strength with various etching times on young permanent teeth

    Energy Technology Data Exchange (ETDEWEB)

    Wang, W.N.; Lu, T.C. (School of Dentistry, National Defense Medical Center, Taipei, Taiwan (China))

    1991-07-01

    Tensile bond strengths of an orthodontic resin cement were compared for 15-, 30-, 60-, 90-, or 120-second etching times, with a 37% phosphoric acid solution on the enamel surfaces of young permanent teeth. Fifty extracted premolars from 9- to 16-year-old children were used for testing. An orthodontic composite resin was used to bond the bracket directly onto the buccal surface of the enamel. The tensile bond strengths were tested with an Instron machine. Bond failure interfaces between bracket bases and teeth surfaces were examined with a scanning electron microscope and calculated with mapping of energy-dispersive x-ray spectrometry. The results of tensile bond strength for 15-, 30-, 60-, or 90-second etching times were not statistically different. For the 120-second etching time, the decrease was significant. Of the bond failures, 43%-49% occurred between bracket and resin interface, 12% to 24% within the resin itself, 32%-40% between resin and tooth interface, and 0% to 4% contained enamel fragments. There was no statistical difference in percentage of bond failure interface distribution between bracket base and resin, resin and enamel, or the enamel detachment. Cohesive failure within the resin itself at the 120-second etching time was less than at other etching times, with a statistical significance. To achieve good retention, to decrease enamel loss, and to reduce moisture contamination in the clinic, as well as to save chairside time, a 15-second etching time is suggested for teenage orthodontic patients.

  16. Acid-catalyzed kinetics of indium tin oxide etching

    Energy Technology Data Exchange (ETDEWEB)

    Choi, Jae-Hyeok; Kim, Seong-Oh; Hilton, Diana L. [School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798 (Singapore); Centre for Biomimetic Sensor Science, Nanyang Technological University, 50 Nanyang Drive, 637553 (Singapore); Cho, Nam-Joon, E-mail: njcho@ntu.edu.sg [School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798 (Singapore); Centre for Biomimetic Sensor Science, Nanyang Technological University, 50 Nanyang Drive, 637553 (Singapore); School of Chemical and Biomedical Engineering, Nanyang Technological University, 62 Nanyang Drive, 637459 (Singapore)

    2014-08-28

    We report the kinetic characterization of indium tin oxide (ITO) film etching by chemical treatment in acidic and basic electrolytes. It was observed that film etching increased under more acidic conditions, whereas basic conditions led to minimal etching on the time scale of the experiments. Quartz crystal microbalance was employed in order to track the reaction kinetics as a function of the concentration of hydrochloric acid and accordingly solution pH. Contact angle measurements and atomic force microscopy experiments determined that acid treatment increases surface hydrophilicity and porosity. X-ray photoelectron spectroscopy experiments identified that film etching is primarily caused by dissolution of indium species. A kinetic model was developed to explain the acid-catalyzed dissolution of ITO surfaces, and showed a logarithmic relationship between the rate of dissolution and the concentration of undisassociated hydrochloric acid molecules. Taken together, the findings presented in this work verify the acid-catalyzed kinetics of ITO film dissolution by chemical treatment, and support that the corresponding chemical reactions should be accounted for in ITO film processing applications. - Highlights: • Acidic conditions promoted indium tin oxide (ITO) film etching via dissolution. • Logarithm of the dissolution rate depended linearly on the solution pH. • Acid treatment increased ITO surface hydrophilicity and porosity. • ITO film etching led to preferential dissolution of indium species over tin species.

  17. Thermal etching of silver: Influence of rolling defects

    Energy Technology Data Exchange (ETDEWEB)

    Ollivier, M., E-mail: o.maelig@imperial.ac.uk [Department of Materials, Imperial College London, SW7 2AZ (United Kingdom); Harker, R.M. [AWE Aldermaston, Aldermaston, Reading RG7 4PR (United Kingdom); Chater, R.J.; Gourlay, C.M. [Department of Materials, Imperial College London, SW7 2AZ (United Kingdom)

    2016-08-15

    Silver is well known to be thermally etched in an oxygen-rich atmosphere and has been extensively studied in the laboratory to understand thermal etching and to limit its effect when this material is used as a catalyst. Yet, in many industrial applications the surface of rolled silver sheets is used without particular surface preparation. Here, it is shown by combining FIB-tomography, FIB-SIMS and analytical SEM that the kinetics of thermal etch pitting are significantly faster on rolled Ag surfaces than on polished surfaces. This occurs due to range of interacting phenomena including (i) the reaction of subsurface carbon-contamination with dissolved oxygen to form pores that grow to intersect the surface, (ii) surface reconstruction around corrosion pits and surface scratches, and (iii) sublimation at low pressure and high temperature. A method to identify subsurface pores is developed to show that the pores have (111) and (100) internal facets and may be filled with a gas coming from the chemical reaction of oxygen and carbon contamination. - Highlights: Thermal etching of industrial silver sheets vs. polished silver sheets Effect of annealing atmosphere on the thermal etching of silver: surface and subsurface characterization Link between etch pitting and defects induced by rolling. FIB-tomography coupled with EBSD for determining crystal planes of the facets of subsurface pores. FIB-SIMS characterization to probe the gas confined inside subsurface pores.

  18. Etching of germanium-tin using ammonia peroxide mixture

    Energy Technology Data Exchange (ETDEWEB)

    Dong, Yuan; Ong, Bin Leong; Wang, Wei; Gong, Xiao; Liang, Gengchiau; Yeo, Yee-Chia, E-mail: yeo@ieee.org [Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117576 (Singapore); Zhang, Zheng; Pan, Jisheng [Institute of Material Research and Engineering, A*STAR (Agency for Science, Technology and Research), 2 Fusionopolis Way, #08-03, Innovis, Singapore 138634 (Singapore); Tok, Eng-Soon [Department of Physics, National University of Singapore, Singapore 117551 (Singapore)

    2015-12-28

    The wet etching of germanium-tin (Ge{sub 1-x}Sn{sub x}) alloys (4.2% < x < 16.0%) in ammonia peroxide mixture (APM) is investigated. Empirical fitting of the data points indicates that the etch depth of Ge{sub 1-x}Sn{sub x} is proportional to the square root of the etch time t and decreases exponentially with increasing x for a given t. In addition, X-ray photoelectron spectroscopy results show that increasing t increases the intensity of the Sn oxide peak, whereas no obvious change is observed for the Ge oxide peak. This indicates that an accumulation of Sn oxide on the Ge{sub 1-x}Sn{sub x} surface decreases the amount of Ge atoms exposed to the etchant, which accounts for the decrease in etch rate with increasing etch time. Atomic force microscopy was used to examine the surface morphologies of the Ge{sub 0.918}Sn{sub 0.082} samples. Both root-mean-square roughness and undulation periods of the Ge{sub 1-x}Sn{sub x} surface were observed to increase with increasing t. This work provides further understanding of the wet etching of Ge{sub 1-x}Sn{sub x} using APM and may be used for the fabrication of Ge{sub 1-x}Sn{sub x}-based electronic and photonic devices.

  19. Level Set Approach to Anisotropic Wet Etching of Silicon

    Directory of Open Access Journals (Sweden)

    Branislav Radjenović

    2010-05-01

    Full Text Available In this paper a methodology for the three dimensional (3D modeling and simulation of the profile evolution during anisotropic wet etching of silicon based on the level set method is presented. Etching rate anisotropy in silicon is modeled taking into account full silicon symmetry properties, by means of the interpolation technique using experimentally obtained values for the etching rates along thirteen principal and high index directions in KOH solutions. The resulting level set equations are solved using an open source implementation of the sparse field method (ITK library, developed in medical image processing community, extended for the case of non-convex Hamiltonians. Simulation results for some interesting initial 3D shapes, as well as some more practical examples illustrating anisotropic etching simulation in the presence of masks (simple square aperture mask, convex corner undercutting and convex corner compensation, formation of suspended structures are shown also. The obtained results show that level set method can be used as an effective tool for wet etching process modeling, and that is a viable alternative to the Cellular Automata method which now prevails in the simulations of the wet etching process.

  20. Parametric x-ray FEL operating with external Bragg reflectors

    International Nuclear Information System (INIS)

    Baryshevsky, V.G.; Batrakov, K.G.; Dubovskaya, I.Ya.

    1995-01-01

    In the crystal X-ray FELs using channeling and parametric quasi-Cherenkov mechanisms of spontaneous radiation were considered as versions of FEL allowing, in principle, to obtain coherent X-ray source. In this case a crystal is both radiator and resonator for X-rays emitted by a particle beam passing through crystal. However, it is well-known that a beam current density required for lasing is extremely high in X-ray spectral range for any radiation mechanisms and it is very important to find a way to lower its magnitude. The application of three-dimensional distributed feedback formed by dynamical diffraction of emitted photons permitted to reduce starting beam current density 10 2 -10 4 times up to 10 9 . One of ways to lower the starting current is the formation of multi-wave distributed feedback the another one is the application of external reflectors. The thing is that lasing regime was shown to be produced at frequencies in the vicinity of degeneration point for roots of dispersion equation describing radiation modes excited in an active medium (crystal plus particle beam). Unfortunately, in case of parametric quasi-Cherenkov FEL this region coincides with the region of strong self-absorption of radiation inside a crystal. That fact, obviously, increases the starting beam current. In this report we have shown that the application of external Bragg reflectors gives the possibility to lower radiation self-absorption inside a crystal by modifying radiation modes excited in the active medium under consideration. The corresponding dispersion equation and the expression for excited modes are derived. The generation equation determining starting conditions for lasing is obtained. Using these expressions we have shown that the application of external Bragg reflectors permits to reduce starting beam current density more than 10 times

  1. Miniature fiber Bragg grating sensor interrogator (FBG-Transceiver) system

    Science.gov (United States)

    Mendoza, Edgar A.; Kempen, Cornelia; Lopatin, Craig

    2007-04-01

    This paper describes recent progress conducted towards the development of a miniature fiber Bragg grating sensor interrogator (FBG-Transceiver TM) system based on multi-channel integrated optic sensor (InOSense TM) microchip technology. The hybrid InOSense TM microchip technology enables the integration of all of the functionalities, both passive and active, of conventional bench top FBG sensor interrogator systems, packaged in a miniaturized, low power operation, 2-cm x 5-cm package suitable for the long-term structural health monitoring in applications where size, weight, and power are critical for operation. The FBG-Transceiver system uses active optoelectronic components monolithically integrated to the InOSense TM microchip, a microprocessor controlled signal processing electronics board capable of processing the FBG sensors signals related to stress-strain and temperature as well as vibration and acoustics. The FBG-Transceiver TM system represents a new, reliable, highly robust technology that can be used to accurately monitor the status of an array of distributed fiber optic Bragg grating sensors installed in critical infrastructures. Its miniature package, low power operation, and state-of-the-art data communications architecture, all at a very affordable price makes it a very attractive solution for a large number of SHM/NDI applications in aerospace, naval and maritime industry, civil structures like bridges, buildings and dams, the oil and chemical industry, and for homeland security applications. The miniature, cost-efficient FBG-Transceiver TM system is poised to revolutionize the field of structural health monitoring and nondestructive inspection market. The sponsor of this program is NAVAIR under a DOD SBIR contract.

  2. Interrogation of weak Bragg grating sensors based on dual-wavelength differential detection.

    Science.gov (United States)

    Cheng, Rui; Xia, Li

    2016-11-15

    It is shown that for weak Bragg gratings the logarithmic ratio of reflected intensities at any two wavelengths within the spectrum follows a linear relationship with the Bragg wavelength shift, with a slope proportional to their wavelength spacing. This finding is exploited to develop a flexible, efficient, and cheap interrogation solution of weak fiber Bragg grating (FBGs), especially ultra-short FBGs, in distributed sensing based on dual-wavelength differential detection. The concept is experimentally studied in both single and distributed sensing systems with ultra-short FBG sensors. The work may form the basis of new and promising FBG interrogation techniques based on detecting discrete rather than continuous spectra.

  3. Linear and circular polarized tunable slow light in Bragg-spaced graphene layers

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Jiang-Tao, E-mail: jtliu@semi.ac.cn [Nanoscale Science and Technology Laboratory, Institute for Advanced Study, Nanchang University, Nanchang 330031 (China); Department of Physics, Nanchang University, Nanchang 330031 (China); Liu, Nian-Hua [Nanoscale Science and Technology Laboratory, Institute for Advanced Study, Nanchang University, Nanchang 330031 (China); Department of Physics, Nanchang University, Nanchang 330031 (China); Wang, Hai [Department of Physics, Capital Normal University, Beijing 100037 (China); Wang, Tong-Biao [Department of Physics, Nanchang University, Nanchang 330031 (China); Li, Xiao-Jing [College of Physics and Energy, Fujian Normal University, Fuzhou 350007 (China)

    2014-11-01

    The light pulse delay in Bragg-spaced graphene layers (BSGs) combined with a magnetic field is investigated theoretically. BSGs can slow down the group velocity of light more effectively than traditional Bragg-spaced quantum wells due to the large binding energy and strong dipole oscillator strength of the magnetic-exciton of graphene. The group velocity can be tuned by varying the pulse frequency, the Bragg frequency, and the magnetic field. Especially, by tuning the occupation number of the Landau level the group velocity in BSGs shows strong tunable circular dichroism. Our findings could have applications in photonic integrated circuits and quantum computation.

  4. Mirror and Bragg reflections of neutrons at a nuclear resonance: [Final technical report

    International Nuclear Information System (INIS)

    Batigun, C.M.; Brugger, R.M.

    1987-01-01

    These experiments have observed the mirror reflection and Bragg diffraction of neutrons at the energy of a low lying nuclear resonance of 115 In. The reflector was a mirror of In metal with the resonance at 1.457 eV. The mirror reflection for different angles of incidence has been measured and sets of data showing the relative reflectivities have been obtained. For the Bragg diffraction, the crystal was a wafer of InP and several examples of Bragg reflections near 1.455 eV were measured. 4 refs., 12 figs

  5. High force measurement sensitivity with fiber Bragg gratings fabricated in uniform-waist fiber tapers

    International Nuclear Information System (INIS)

    Wieduwilt, Torsten; Brückner, Sven; Bartelt, Hartmut

    2011-01-01

    Fiber Bragg gratings inscribed in the waist of tapered photosensitive fibers offer specific attractive properties for sensing applications. A small-diameter fiber reduces structural influences for imbedded fiber sensing elements. In the case of application as a force-sensing element for tensile forces, sensitivity scales inversely with the fiber cross-sectional area. It is therefore possible to increase force sensitivity by several orders of magnitude compared to Bragg grating sensors in conventionally sized fibers. Special requirements for such Bragg grating arrangements are discussed and experimental measurements for different fiber taper diameters down to 4 µm are presented

  6. Microfiber Bragg grating hydrogen sensor base on co-sputtered Pd/Ni composite film

    Science.gov (United States)

    Wang, Gaopeng; Yang, Minghong; Dai, Jixiang; Cheng, Cheng; Yuan, Yinqian

    2015-07-01

    A novel hydrogen sensor based on Pd/Ni co-sputtered coating on micro fiber Bragg grating (MFBG) is proposed and experimentally demonstrated. The microfiber is stretched uniformly and the Bragg grating is directly inscribed on the microfiber without hydrogen loading using 193 nm ArF excimer laser and a phase mask. Palladium and nickel coatings are co-sputtered on the micro fiber Bragg grating for hydrogen sensing. The MFBG hydrogen sensors are characterized concerning their response to the hydrogen, ambient temperature and ambient refractive index, respectively. The performance of the proposed MFBG hydrogen sensor is obviously enhanced, especially when compared to standard FBG hydrogen sensors.

  7. Single Mode Optical Fiber based Refractive Index Sensor using Etched Cladding

    OpenAIRE

    Kumar, Ajay; Gupta, Geeta; Mallik, Arun; Bhatnagar, Anuj

    2011-01-01

    The use of optical fiber for sensor applications is a topic of current interest. We report the fabrication of etched single mode optical fiber based refractive index sensor. Experiments are performed to determine the etch rate of fiber in buffered hydrofluoric acid, which can be high or low depending upon the temperature at which etching is carried out. Controlled wet etching of fiber cladding is performed using these measurements and etched fiber region is tested for refractive index sensing...

  8. An In Vitro Evaluation of Leakage of Two Etch and Rinse and Two Self-Etch Adhesives after Thermocycling

    OpenAIRE

    Geerts, Sabine; Bolette, Amandine; Seidel, Laurence; Guéders, Audrey

    2012-01-01

    Our experiment evaluated the microleakage in resin composite restorations bonded to dental tissues with different adhesive systems. 40 class V cavities were prepared on the facial and lingual surfaces of each tooth with coronal margins in enamel and apical margins in cementum (root dentin). The teeth were restored with Z100 resin composite bonded with different adhesive systems: Scotchbond Multipurpose (SBMP), a 3-step Etch and Rinse adhesive, Adper Scotchbond 1 XT (SB1), a 2-step Etch and Ri...

  9. Temperature increase beneath etched dentin discs during composite polymerization.

    Science.gov (United States)

    Karaarslan, Emine Sirin; Secilmis, Asli; Bulbul, Mehmet; Yildirim, Cihan; Usumez, Aslihan

    2011-01-01

    The purpose of this in vitro study was to measure the temperature increase during the polymerization of a composite resin beneath acid-etched or laser-etched dentin discs. The irradiation of dentin with an Er:YAG laser may have a positive effect on the thermal conductivity of dentin. This technique has not been studied extensively. Forty dentin discs (5 mm in diameter and 0.5 or 1 mm in height) were prepared from extracted permanent third molars. These dentin discs were etched with 20% orthophosphoric acid or an Er:YAG laser, and were then placed on an apparatus developed to measure temperature increases. The composite resin was polymerized with a high-intensity quartz tungsten halogen (HQTH) or light-emitting diode unit (LED). The temperature increase was measured under the dentin disc with a J-type thermocouple wire that was connected to a data logger. Five measurements were made for each dentin disc, curing unit, and etching system combination. Differences between the initial and the highest temperature readings were taken, and the five calculated temperature changes were averaged to determine the value of the temperature increase. Statistical analysis was performed with a three-way ANOVA and Tukey HSD tests at a 0.05 level of significance. Further SEM examinations were performed. The temperature increase values varied significantly, depending on etching systems (p < 0.05), dentin thicknesses (p < 0.05), and curing units (p < 0.05). Temperature increases measured beneath laser-etched discs were significantly higher than those for acid-etched dentin discs (p < 0.05). The HQTH unit induced significantly higher temperature increases than the LED unit (p < 0.05). The LED unit induced the lowest temperature change (5.2°C) in the 1-mm, acid-etched dentin group. The HQTH unit induced the highest temperature change (10.4°C) for the 0.5-mm, laser-etched dentin group. The risk of heat-induced pulpal damage should be taken into consideration

  10. What Is Dry Eye?

    Medline Plus

    Full Text Available ... Eye Symptoms Causes of Dry Eye Dry Eye Treatment What Is Dry Eye? Leer en Español: ¿Qué ... Your Eyelid Nov 29, 2017 New Dry Eye Treatment is a Tear-Jerker Jul 21, 2017 Three ...

  11. Drying of building lumber

    Energy Technology Data Exchange (ETDEWEB)

    Washimi, Hiroshi

    1988-08-20

    Dried lumber is classified into air dried and kiln-dried lumber. The water content of kiln-dried lumber is specified by the Japan Agricultural Standards. However, since building lumber varies in such factors as the location where it was growing, species and shape, the standards, though relaxed, are not being observed. In fact, lumbered products which are not ''Kiln-dried'' frequently bear ''kiln-dried lumber'' marks. In an attempt to correct the situation, the Forestry Agency has set up voluntary standards, but problems still remain. The conventional drying method consists of first subjecting the lumber to optimum drying, then letting bending and deformations to freely and fully appear, and follow this with corrective sawing to produce planks straight from end to end. Compared with air dried lumber in terms of moisture content, kiln-dried lumber remains much with same with minimal shrinkage and expansion. For oil-containing resin, such normal treatments as drying by heating, steaming and boiling seem to be quite effective. Kiln drying, which is becoming more and more important with changes in the circulation system, consists of the steaming-drying-heating method and the dehumidizing type drying method. The major factor which determines the drying cost is the number of days required for drying, which depends largely on the kind of lumber and moisture content. The Forestry Angency is promoting production of defoiled lumber. (2 figs, 2 tables)

  12. Effects of gas-flow structures on radical and etch-product density distributions on wafers in magnetomicrowave plasma etching reactors

    International Nuclear Information System (INIS)

    Ikegawa, Masato; Kobayashi, Jun'ichi; Fukuyama, Ryoji

    2001-01-01

    To achieve high etch rate, uniformity, good selectivity, and etch profile control across large diameter wafers, the distributions of ions, radicals, and etch products in magnetomicrowave high-etch-rate plasma etching reactors must be accurately controlled. In this work the effects of chamber heights, a focus ring around the wafer, and gas supply structures (or gas flow structures) on the radicals and etch products flux distribution onto the wafer were examined using the direct simulation Monte Carlo method and used to determine the optimal reactor geometry. The pressure uniformity on the wafer was less than ±1% when the chamber height was taller than 60 mm. The focus ring around the wafer produced uniform radical and etch-product fluxes but increased the etch-product flux on the wafer. A downward-flow gas-supply structure (type II) produced a more uniform radical distribution than that produced by a radial gas-supply structure (type I). The impact flow of the type II structure removed etch products from the wafer effectively and produced a uniform etch-product distribution even without the focus ring. Thus the downward-flow gas-supply structure (type II) was adopted in the design for the second-generation of a magnetomicrowave plasma etching reactor with a higher etching rate

  13. Advanced Simulation Technology to Design Etching Process on CMOS Devices

    Science.gov (United States)

    Kuboi, Nobuyuki

    2015-09-01

    Prediction and control of plasma-induced damage is needed to mass-produce high performance CMOS devices. In particular, side-wall (SW) etching with low damage is a key process for the next generation of MOSFETs and FinFETs. To predict and control the damage, we have developed a SiN etching simulation technique for CHxFy/Ar/O2 plasma processes using a three-dimensional (3D) voxel model. This model includes new concepts for the gas transportation in the pattern, detailed surface reactions on the SiN reactive layer divided into several thin slabs and C-F polymer layer dependent on the H/N ratio, and use of ``smart voxels''. We successfully predicted the etching properties such as the etch rate, polymer layer thickness, and selectivity for Si, SiO2, and SiN films along with process variations and demonstrated the 3D damage distribution time-dependently during SW etching on MOSFETs and FinFETs. We confirmed that a large amount of Si damage was caused in the source/drain region with the passage of time in spite of the existing SiO2 layer of 15 nm in the over etch step and the Si fin having been directly damaged by a large amount of high energy H during the removal step of the parasitic fin spacer leading to Si fin damage to a depth of 14 to 18 nm. By analyzing the results of these simulations and our previous simulations, we found that it is important to carefully control the dose of high energy H, incident energy of H, polymer layer thickness, and over-etch time considering the effects of the pattern structure, chamber-wall condition, and wafer open area ratio. In collaboration with Masanaga Fukasawa and Tetsuya Tatsumi, Sony Corporation. We thank Mr. T. Shigetoshi and Mr. T. Kinoshita of Sony Corporation for their assistance with the experiments.

  14. Surfactant-enhanced control of track-etch pore morphology

    International Nuclear Information System (INIS)

    Apel', P.Yu.; Blonskaya, I.V.; Didyk, A.Yu.; Dmitriev, S.N.; Orelovich, O.L.; Samojlova, L.I.; Vutsadakis, V.A.; Root, D.

    2000-01-01

    The influence of surfactants on the process of chemical development of ion tracks in polymers is studied. Based on the experimental data, a mechanism of the surfactant effect on the track-etch pore morphology is proposed. In the beginning of etching the surfactant is adsorbed on the surface and creates a layer that is quasi-solid and partially protects the surface from the etching agent. However, some etchant molecules diffuse through the barrier and react with the polymer surface. This results in the formation of a small hole at the entrance to the ion track. After the hole has attained a few annometers in diameter, the surfactant molecules penetrate into the track and cover its walls. Further diffusion of the surfactant into the growing pore is hindered. The adsorbed surfactant layer is not permeable for large molecules. In contrast, small alkali molecules and water molecules diffuse into the track and provide the etching process enlarging the pore. At this stage the transport of the surfactant into the pore channel can proceed only due to the lateral diffusion in the adsorbed layer. The volume inside the pore is free of surfactant molecules and grows at a higher rate than pore entrance. After a more prolonged etching the bottle-like (or 'cigar-like') pore channels are formed. The bottle-like shape of the pore channels depends on the etching conditions such as alkali and surfactant concentration, temperature, and type of the surfactant. The use of surfactants enables one to produce track-etch membranes with improved flow rate characteristics compared with those having cylindrical pores with the same nominal pore diameters

  15. Design Schematics for a Sustainable Parking Lot: Building 2-2332, ENRD Classroom, Fort Bragg, NC

    National Research Council Canada - National Science Library

    Stumpf, Annette

    2003-01-01

    ...) was tasked with planning a sustainable design "charrette" to explore and develop alternative parking lot designs that would meet Fort Bragg's parking needs, as well as its need to meet sustainable...

  16. High-speed two-dimensional laser scanner based on Bragg gratings stored in photothermorefractive glass.

    Science.gov (United States)

    Yaqoob, Zahid; Arain, Muzammil A; Riza, Nabeel A

    2003-09-10

    A high-speed free-space wavelength-multiplexed optical scanner with high-speed wavelength selection coupled with narrowband volume Bragg gratings stored in photothermorefractive (PTR) glass is reported. The proposed scanner with no moving parts has a modular design with a wide angular scan range, accurate beam pointing, low scanner insertion loss, and two-dimensional beam scan capabilities. We present a complete analysis and design procedure for storing multiple tilted Bragg-grating structures in a single PTR glass volume (for normal incidence) in an optimal fashion. Because the scanner design is modular, many PTR glass volumes (each having multiple tilted Bragg-grating structures) can be stacked together, providing an efficient throughput with operations in both the visible and the infrared (IR) regions. A proof-of-concept experimental study is conducted with four Bragg gratings in independent PTR glass plates, and both visible and IR region scanner operations are demonstrated.

  17. High Power Compact Single-Frequency Volume Bragg Er-Doped Fiber Laser, Phase II

    Data.gov (United States)

    National Aeronautics and Space Administration — This proposal is based on successful results of Phase I project where it was shown that the use of volume Bragg gratings in PTR glass as selectors of transverse and...

  18. Fiber Bragg Grating (FBG) sensors as flatness and mechanical stretching sensors

    Energy Technology Data Exchange (ETDEWEB)

    Abbaneo, D.; Abbas, M. [CERN, Geneva (Switzerland); Abbrescia, M. [INFN Bari and University of Bari, Bari (Italy); Abdelalim, A.A. [Helwan University & CTP, Cairo (Egypt); Abi Akl, M. [Texas A& M University at Qatar, Doha (Qatar); Aboamer, O. [Academy of Scientific Research and Technology – Egyptian Network of High Energy Physics, ASRT-ENHEP, Cairo (Egypt); Acosta, D. [University of Florida, Gainesville (United States); Ahmad, A. [National Center for Physics, Quaid-i-Azam University Campus, Islamabad (Pakistan); Ahmed, W. [Helwan University & CTP, Cairo (Egypt); Ahmed, W. [National Center for Physics, Quaid-i-Azam University Campus, Islamabad (Pakistan); Aleksandrov, A. [Institute for Nuclear Research and Nuclear Energy, Sofia (Bulgaria); Aly, R. [Helwan University & CTP, Cairo (Egypt); Altieri, P. [INFN Bari and University of Bari, Bari (Italy); Asawatangtrakuldee, C. [Peking University, Beijing (China); Aspell, P. [CERN, Geneva (Switzerland); Assran, Y. [Academy of Scientific Research and Technology – Egyptian Network of High Energy Physics, ASRT-ENHEP, Cairo (Egypt); Awan, I. [National Center for Physics, Quaid-i-Azam University Campus, Islamabad (Pakistan); Bally, S. [CERN, Geneva (Switzerland); Ban, Y. [Peking University, Beijing (China); Banerjee, S. [Saha Institute of Nuclear Physics, Kolkata (India); and others

    2016-07-11

    A novel approach which uses Fiber Bragg Grating (FBG) sensors has been utilized to assess and monitor the flatness of Gaseous Electron Multipliers (GEM) foils. The setup layout and preliminary results are presented.

  19. Excitation of surface electromagnetic waves in a graphene-based Bragg grating.

    Science.gov (United States)

    Sreekanth, Kandammathe Valiyaveedu; Zeng, Shuwen; Shang, Jingzhi; Yong, Ken-Tye; Yu, Ting

    2012-01-01

    Here, we report the fabrication of a graphene-based Bragg grating (one-dimensional photonic crystal) and experimentally demonstrate the excitation of surface electromagnetic waves in the periodic structure using prism coupling technique. Surface electromagnetic waves are non-radiative electromagnetic modes that appear on the surface of semi-infinite 1D photonic crystal. In order to fabricate the graphene-based Bragg grating, alternating layers of high (graphene) and low (PMMA) refractive index materials have been used. The reflectivity plot shows a deepest, narrow dip after total internal reflection angle corresponds to the surface electromagnetic mode propagating at the Bragg grating/air boundary. The proposed graphene based Bragg grating can find a variety of potential surface electromagnetic wave applications such as sensors, fluorescence emission enhancement, modulators, etc.

  20. Process monitoring of glass reinforced polypropylene laminates using fiber Bragg gratings

    KAUST Repository

    Mulle, Matthieu; Wafai, Husam; Yudhanto, Arief; Lubineau, Gilles; Yaldiz, R.; Schijve, W.; Verghese, N.

    2015-01-01

    Hot-press molding of glass-fiber-reinforced polypropylene (GFPP) laminates was monitored using longitudinally and transversely embedded fiber Bragg gratings (FBGs) at different locations in unidirectional laminates. The optical sensors proved