Development of a fabrication technology for double-sided AC-coupled silicon microstrip detectors

International Nuclear Information System (INIS)

Dalla Betta, G.-F.; Boscardin, M.; Bosisio, L.; Rachevskaia, I.; Zen, M.; Zorzi, N.

2001-01-01

We report on the development of a fabrication technology for double-sided, AC-coupled silicon microstrip detectors for tracking applications. Two batches of detectors with good electrical figures and a low defect rate were successfully manufactured at IRST Laboratory. The processing techniques and the experimental results obtained from these detector prototypes are presented and discussed

A novel sandwich differential capacitive accelerometer with symmetrical double-sided serpentine beam-mass structure

International Nuclear Information System (INIS)

Xiao, D B; Li, Q S; Hou, Z Q; Wang, X H; Chen, Z H; Xia, D W; Wu, X Z

2016-01-01

This paper presents a novel differential capacitive silicon micro-accelerometer with symmetrical double-sided serpentine beam-mass sensing structure and glass–silicon–glass sandwich structure. The symmetrical double-sided serpentine beam-mass sensing structure is fabricated with a novel pre-buried mask fabrication technology, which is convenient for manufacturing multi-layer sensors. The glass–silicon–glass sandwich structure is realized by a double anodic bonding process. To solve the problem of the difficulty of leading out signals from the top and bottom layer simultaneously in the sandwich sensors, a silicon pillar structure is designed that is inherently simple and low-cost. The prototype is fabricated and tested. It has low noise performance (the peak to peak value is 40 μg) and μg-level Allan deviation of bias (2.2 μg in 1 h), experimentally demonstrating the effectiveness of the design and the novel fabrication technology. (paper)

Characterization and calibration of radiation-damaged double-sided silicon strip detectors

Energy Technology Data Exchange (ETDEWEB)

Kaya, L. [Institut für Kernphysik, Universität zu Köln, D-50937 Köln (Germany); Vogt, A., E-mail: andreas.vogt@ikp.uni-koeln.de [Institut für Kernphysik, Universität zu Köln, D-50937 Köln (Germany); Reiter, P.; Birkenbach, B.; Hirsch, R.; Arnswald, K.; Hess, H.; Seidlitz, M.; Steinbach, T.; Warr, N.; Wolf, K. [Institut für Kernphysik, Universität zu Köln, D-50937 Köln (Germany); Stahl, C.; Pietralla, N. [Institut für Kernphysik, Technische Universität Darmstadt, D-64291 Darmstadt (Germany); Limböck, T.; Meerholz, K. [Physikalische Chemie, Universität zu Köln, D-50939 Köln (Germany); Lutter, R. [Maier-Leibnitz-Laboratorium, Ludwig-Maximilians-Universität München, D-85748 Garching (Germany)

2017-05-21

Double-sided silicon strip detectors (DSSSD) are commonly used for event-by-event identification of charged particles as well as the reconstruction of particle trajectories in nuclear physics experiments with stable and radioactive beams. Intersecting areas of both p- and n-doped front- and back-side segments form individual virtual pixel segments allowing for a high detector granularity. DSSSDs are employed in demanding experimental environments and have to withstand high count rates of impinging nuclei. The illumination of the detector is often not homogeneous. Consequently, radiation damage of the detector is distributed non-uniformly. Position-dependent incomplete charge collection due to radiation damage limits the performance and lifetime of the detectors, the response of different channels may vary drastically. Position-resolved charge-collection losses between front- and back-side segments are investigated in an in-beam experiment and by performing radioactive source measurements. A novel position-resolved calibration method based on mutual consistency of p-side and n-side charges yields a significant enhancement of the energy resolution and the performance of radiation-damaged parts of the detector.

Comb-drive GaN micro-mirror on a GaN-on-silicon platform

International Nuclear Information System (INIS)

Wang, Yongjin; Sasaki, Takashi; Wu, Tong; Hu, Fangren; Hane, Kazuhiro

2011-01-01

We report here a double-sided process for the fabrication of a comb-drive GaN micro-mirror on a GaN-on-silicon platform. A silicon substrate is first patterned from the backside and removed by deep reactive ion etching, resulting in totally suspended GaN slabs. GaN microstructures including the torsion bars, movable combs and mirror plate are then defined on a freestanding GaN slab by the backside alignment technique and generated by fast atom beam etching with Cl 2 gas. Although the fabricated comb-drive GaN micro-mirrors are deflected by the residual stress in GaN thin films, they can operate on a high resistivity silicon substrate without introducing any additional isolation layer. The optical rotation angles are experimentally characterized in the rotation experiments. This work opens the possibility of producing GaN optical micro-electro-mechanical-system (MEMS) devices on a GaN-on-silicon platform.

A double sided silicon strip detector as a DRAGON end detector

CERN Document Server

Wrede, C; Rogers, J G; D'Auria, J M

2003-01-01

The new DRAGON facility (detector of recoils and gammas of nuclear reactions), located at the TRlUMF-ISAC Radioactive Beams facility in Vancouver, Canada is now operational. This facility is used to study radiative proton capture reactions in inverse kinematics (heavy ion beam onto a light gaseous target) with both stable beams and radioactive beams of mass A=13-26 in the energy range 0.15-1.5 MeV/u. A double sided silicon strip detector (DSSSD) has been used to detect recoil ions. Tests have been performed to determine the performance of this DSSSD.

Build-up of the silicon micro-strip detector array in ETF of HIRFL-CSR

International Nuclear Information System (INIS)

Wang Pengfei; Li Zhankui; Li Haixia

2014-01-01

Silicon micro-strip detectors have been widely used in the world-famous nuclear physics laboratories due to their better position resolution and energy resolution. Double-sided silicon micro-strip detectors with a position resolution of 0.5 mm × 0.5 mm, have been fabricated in the IMP (Institute of Modern Physics, CAS) by using microelectronics technology. These detectors have been used in the ETF (External Target Facility) of HIRFL-CSR, as ΔE detectors of the ΔE-E telescope system and the track detectors. With the help of flexibility printed circuit board (FPCB) and the integrated ASIC chips, a compact multi-channel front-end electronic board has been designed to fulfill the acquisition of the energy and position information of the Silicon micro-strip detectors. It is described in this paper that the build-up of the Silicon micro-strip detector array in ETF of HIRFL-CSR, the determination of the energy resolution of the detector units, and the energy resolution of approximately 1% obtained for 5∼9 MeV α particles in vacuum. (authors)

Charge-partitioning study of a wide-pitch silicon micro-strip detector with a 64-channel CMOS preamplifier array

International Nuclear Information System (INIS)

Ikeda, H.; Tsuboyama, T.; Okuno, S.; Saitoh, Y.; Akamine, T.; Satoh, K.; Inoue, M.; Yamanaka, J.; Mandai, M.; Takeuchi, H.; Kitta, T.; Miyahara, S.; Kamiya, M.

1996-01-01

The wider pitch readout operation of a 50 μm-pitch double-sided silicon micro-strip detector has been studied specifically concerning its ohmic side. Every second readout and ganged configuration was examined by employing a newly developed 64-channel preamplifier array. The observed charge responses for collimated IR light were compared with a numerical model. (orig.)

The design and construction of a double-sided Silicon Microvertex Detector for the L3 experiment at CERN

International Nuclear Information System (INIS)

Adam, A.; Ambrosi, G.; Babucci, E.; Bertucci, B.; Biasini, M.; Bilei, G.M.; Caria, M.; Checcucci, B.; Easo, S.; Fiandrini, E.; Krastev, V.R.; Massetti, R.; Pauluzzi, M.; Santocchia, A.; Servoli, L.; Baschirotto, A.; Bosetti, M.; Pensotti, S.; Rancoita, P.G.; Rattaggi, M.; Terzi, G.; Battiston, R.; Bay, A.; Burger, W.J.; Extermann, P.; Perrin, E.; Susinno, G.F.; Bencze, G.Y.L.; Kornis, J.; Toth, J.; Bobbink, G.J.; Duinker, P.; Brooks, M.L.; Coan, T.E.; Kapustinsky, J.S.; Kinnison, W.W.; Lee, D.M.; Mills, G.B.; Thompson, T.C.; Busenitz, J.; DiBitonto, D.; Camps, C.; Commichau, V.; Hangartner, K.; Schmitz, P.; Chen, A.; Hou, S.; Lin, W.T.; Gougas, A.; Kim, D.; Paul, T.; Hauviller, C.; Herve, A.; Josa, I.; Landi, G.; Lebeau, M.; Lecomte, P.; Viertel, G.M.; Waldmeier, S.; Leiste, R.; Lejeune, E.; Weill, R.; Lohmann, W.; Nowak, H.; Sachwitz, M.; Schoeniech, B.; Tonisch, F.; Trowitzsch, G.; Vogt, H.; Passaleva, G.; Yeh, S.C.

1993-01-01

A Silicon Microvertex Detector (SMD) has been commissioned for the L3 experiment at the Large Electron-Positron colliding-beam accelerator (LEP) at the European Center for Nuclear Physics, (CERN). The SMD is a 72,672 channel, two layer barrel tracker that is comprised of 96 ac-coupled, double-sided silicon detectors. Details of the design and construction are presented

Silicon micro-vertex detector for Belle II

International Nuclear Information System (INIS)

Mohanty, Gagan

2013-01-01

The Belle experiment at the KEK B-factory is Japan provided the landmark experimental confirmation of CP violation mechanism within the standard model that led to the physics Nobel prize in 2008. In its second phase, called Belle II, it would seek for the holy-grail of new physics using rare decays of B and D mesons and tau leptons as a probe, in complimentary to the direct searches carried out with the LHC experiments. An important component of this upgrade is to replace the innermost subdetector, namely the silicon micro-vertex detector (SVD). The new SVD will, like the old one, consist of four layers of double-sided silicon strip detector, but made from 6âĂİ wafers and located at higher radii as a novel, two-layer DEPFET pixel detector will be inserted very dose to the beam- pipe. Starting with the physics motivation, we discuss the design concept, fabrication and the Indian contributions toward the Belle II SVD. (author)

Study of inter-strip gap effects and efficiency for full energy detection of double sided silicon strip detectors

International Nuclear Information System (INIS)

Fisichella, M.; Forneris, J.; Grassi, L.

2015-01-01

We performed a characterization of Double Sided Silicon Strip Detectors (DSSSD) with the aim to carry out a systematic study of the inter-strip effects on the energy measurement of charged particles. The dependence of the DSSSD response on ion, energy and applied bias has been investigated. (author)

Quality assurance of double-sided silicon microstrip sensors for the silicon tracking system in the CBM experiment at FAIR

Energy Technology Data Exchange (ETDEWEB)

Larionov, Pavel [Goethe Universitaet, Frankfurt (Germany); Collaboration: CBM-Collaboration

2015-07-01

The Silicon Tracking System (STS) is the core tracking detector of the CBM experiment at FAIR. The system's task is to reconstruct the trajectories of the charged particles produced in the beam-target interactions, provide their momentum determination, and enable the detection of decay topologies. The STS will comprise 1220 double-sided silicon microstrip sensors. After production each sensor will go through a number of Quality Assurance procedures to verify their validity for performance in the STS and also to confirm the manufacturer's data. In this talk, results of the quality assurance procedures that are being applied to the latest STS prototype sensors, including detailed tests of the quality of each single strip, long-term stability and preparations for volume tests during series production, are presented.

Development of double-sided silicon strip detectors (DSSD) for a Compton telescope

International Nuclear Information System (INIS)

Takeda, Shin'ichiro; Watanabe, Shin; Tanaka, Takaaki; Nakazawa, Kazuhiro; Takahashi, Tadayuki; Fukazawa, Yasushi; Yasuda, Hajimu; Tajima, Hiroyasu; Kuroda, Yoshikatsu; Onishi, Mitsunobu; Genba, Kei

2007-01-01

The low noise double-sided silicon strip detector (DSSD) technology is used to construct a next generation Compton telescope which is required to have both high-energy resolution and high-Compton reconstruction efficiency. In this paper, we present the result of a newly designed stacked DSSD module with high-energy resolution in highly packed mechanical structure. The system is designed to obtain good P-side and N-side noise performance by means of DC-coupled read-out. Since there are no decoupling capacitors in front-end electronics before the read-out ASICs, a high density stacked module with a pitch of 2 mm can be constructed. By using a prototype with four-layer of DSSDs with an area of 2.56cmx2.56cm, we have succeeded to operate the system. The energy resolution at 59.5 keV is measured to be 1.6 keV (FWHM) for the P-side and 2.8 keV (FWHM) for the N-side, respectively. In addition to the DSSD used in the prototype, a 4 cm wide DSSD with a thickness of 300μm is also developed. With this device, an energy resolution of 1.5 keV (FWHM) was obtained. A method to model the detector energy response to properly handle split events is also discussed

SiliPET: An ultra high resolution design of a small animal PET scanner based on double sided silicon strip detector stacks

International Nuclear Information System (INIS)

Zavattini, G.; Cesca, N.; Di Domenico, G.; Moretti, E.; Sabba, N.

2006-01-01

We investigated the capabilities of a small animal PET scanner, named SiliPET, based on four stacks of double sided silicon strips detectors. Each stack consists of 40 silicon detectors with dimension 60x60x1mm 3 . These are arranged to form a box 5x5x6cm 3 with minor sides opened; the box represents the maximal FOV of the scanner. The performance parameters of SiliPET scanner have been estimated, giving an intrinsic spatial resolution of 0.52mm and a sensitivity of 5.1% at the center of the system

Development and performance of double sided silicon strip detectors

International Nuclear Information System (INIS)

Batignani, G.; Forti, F.; Moneta, L.; Triggiani, G.; Bosisio, L.; Focardi, E.; Giorgi, M.A.; Parrini, G.; Tonelli, G.

1991-01-01

Microstrip silicon detectors with orthogonal readout on opposite sides have been designed and fabricated. The active area of each device is 25 cm 2 and the strip pitch is 25 μm on the junction side and 50 μm on the opposite ohmic side. A space resolution of 15 μm on the junction side (100 μm readout pitch) and 24 μm on the ohmic side (200 μm readout pitch) has been measured. We also report on AC-coupling chips, designed and fabricated in order to allow AC connection of the strips to the amplifiers. These chips are 6.4x5.0 mm 2 and have 100 μm pitch. Both AC-couplers and detectors have been installed as part of the ALEPH minivertex. (orig.)

Lithium analysis using a double-sided silicon strip detector at LIBAF

Science.gov (United States)

De La Rosa, Nathaly; Kristiansson, Per; Nilsson, E. J. Charlotta; Ros, Linus; Elfman, Mikael; Pallon, Jan

2017-08-01

Quantification and mapping possibilities of lithium in geological material, by Nuclear Reaction Analysis (NRA), was evaluated at the Lund Ion Beam Analysis Facility (LIBAF). LiF and two Standard Reference Materials, (SRM 610 and SRM 612) were used in the investigation. The main part of the data was obtained at the beam energy 635 keV studying the high Q-value reaction 7Li(p, α)4He, but reaction yield and detection limits were also briefly investigated as a function of the energy. A double-sided silicon strip detector (DSSSD) was used to detect the α -particles emitted in the reaction in the backward direction. The combination of the high Q-value, a reasonably good cross-section and the possibility to use a high beam current have been demonstrated to allow for measurement of concentrations down below 50 ppm. Proton energies below 800 keV were demonstrated to be appropriate energies for extracting lithium in combination with boron analysis.

Design,construction and commissioning of a cylinder of double-sided silicon micro-strips detectors for the Star experiment at RHIC; Developpement et mise en oeuvre de detecteurs silicium a micropistes pour l'experience star

Energy Technology Data Exchange (ETDEWEB)

Guedon, M

2005-05-15

This study has been performed in the frame of quark gluon plasma physics research in the STAR experiment at RHIC. It deals with the design, the construction and the commissioning of a barrel of silicon-strip detectors (SSD). Added to the Silicon Vertex Tracker (SVT) of the STAR detector, it extends the capabilities of track reconstruction for charged particles emitted in ultra-relativistic heavy-ion collisions. It also contributes to the general study of the quark-gluon plasma production undertaken at STAR. The SSD is a cylinder of 1 m long and of 23 cm radius, and it is composed of 320 compact identical modules. Each module includes one double-sided silicon micro-strip detector, 12 readout chips ALICE 128C, 12 TAB ribbons, 2 COSTAR control chips and 2 hybrids supporting all the components. The document explains why the SSD is an important and relevant element, and justifies the technological choices as well as their validation by in-beam characterization. All component functionalities, characteristics and test procedures are presented. The data and test results are stored in a database for tracing purpose. Component and module production is described. Two parallel studies have been performed, analysed and described. One on the temperature dependence of the module performances and the other one on the optimal adjustments of the analogue blocks inside the ALICE 128C chip. The SSD installation on the RHIC site as well as the commissioning are presented together with the first data takings. (author)

Design,construction and commissioning of a cylinder of double-sided silicon micro-strips detectors for the Star experiment at RHIC; Developpement et mise en oeuvre de detecteurs silicium a micropistes pour l'experience star

Energy Technology Data Exchange (ETDEWEB)

Guedon, M

2005-05-15

This study has been performed in the frame of quark gluon plasma physics research in the STAR experiment at RHIC. It deals with the design, the construction and the commissioning of a barrel of silicon-strip detectors (SSD). Added to the Silicon Vertex Tracker (SVT) of the STAR detector, it extends the capabilities of track reconstruction for charged particles emitted in ultra-relativistic heavy-ion collisions. It also contributes to the general study of the quark-gluon plasma production undertaken at STAR. The SSD is a cylinder of 1 m long and of 23 cm radius, and it is composed of 320 compact identical modules. Each module includes one double-sided silicon micro-strip detector, 12 readout chips ALICE 128C, 12 TAB ribbons, 2 COSTAR control chips and 2 hybrids supporting all the components. The document explains why the SSD is an important and relevant element, and justifies the technological choices as well as their validation by in-beam characterization. All component functionalities, characteristics and test procedures are presented. The data and test results are stored in a database for tracing purpose. Component and module production is described. Two parallel studies have been performed, analysed and described. One on the temperature dependence of the module performances and the other one on the optimal adjustments of the analogue blocks inside the ALICE 128C chip. The SSD installation on the RHIC site as well as the commissioning are presented together with the first data takings. (author)

Effects of the interstrip gap on the efficiency and response of Double Sided Silicon Strip Detectors

Directory of Open Access Journals (Sweden)

Torresi D.

2016-01-01

Full Text Available In this work the effects of the segmentation of the electrodes of Double Sided Silicon Strip Detectors (DSSSDs are investigated. In order to characterize the response of the DSSSDs we perform a first experiment by using tandem beams of different energies directly sent on the detector and a second experiment by mean of a proton microbeam. Results show that the effective width of the inter-strip region and the efficiency for full energy detection, varies with both detected energy and bias voltage. The experimental results are qualitatively reproduced by a simplified model based on the Shockley-Ramo-Gunn framework.

Investigation of leakage current and breakdown voltage in irradiated double-sided 3D silicon sensors

International Nuclear Information System (INIS)

Betta, G.-F. Dalla; Mendicino, R.; Povoli, M.; Sultan, D.M.S.; Ayllon, N.; Hoeferkamp, M.; McDuff, H.; Seidel, S.; Boscardin, M.; Zorzi, N.; Mattiazzo, S.

2016-01-01

We report on an experimental study aimed at gaining deeper insight into the leakage current and breakdown voltage of irradiated double-sided 3D silicon sensors from FBK, so as to improve both the design and the fabrication technology for use at future hadron colliders such as the High Luminosity LHC. Several 3D diode samples of different technologies and layout are considered, as well as several irradiations with different particle types. While the leakage current follows the expected linear trend with radiation fluence, the breakdown voltage is found to depend on both the bulk damage and the surface damage, and its values can vary significantly with sensor geometry and process details.

Research on a Micro-Nano Si/SiGe/Si Double Heterojunction Electro-Optic Modulation Structure

Directory of Open Access Journals (Sweden)

Song Feng

2018-01-01

Full Text Available The electro-optic modulator is a very important device in silicon photonics, which is responsible for the conversion of optical signals and electrical signals. For the electro-optic modulator, the carrier density of waveguide region is one of the key parameters. The traditional method of increasing carrier density is to increase the external modulation voltage, but this way will increase the modulation loss and also is not conducive to photonics integration. This paper presents a micro-nano Si/SiGe/Si double heterojunction electro-optic modulation structure. Based on the band theory of single heterojunction, the barrier heights are quantitatively calculated, and the carrier concentrations of heterojunction barrier are analyzed. The band and carrier injection characteristics of the double heterostructure structure are simulated, respectively, and the correctness of the theoretical analysis is demonstrated. The micro-nano Si/SiGe/Si double heterojunction electro-optic modulation is designed and tested, and comparison of testing results between the micro-nano Si/SiGe/Si double heterojunction micro-ring electro-optic modulation and the micro-nano Silicon-On-Insulator (SOI micro-ring electro-optic modulation, Free Spectrum Range, 3 dB Bandwidth, Q value, extinction ratio, and other parameters of the micro-nano Si/SiGe/Si double heterojunction micro-ring electro-optic modulation are better than others, and the modulation voltage and the modulation loss are lower.

High efficiency double sided solar cells

International Nuclear Information System (INIS)

Seddik, M.M.

1990-06-01

Silicon technology state of the art for single crystalline was given to be limited to less than 20% efficiency. A proposed new form of photovoltaic solar cell of high current high efficiency with double sided structures has been given. The new forms could be n ++ pn ++ or p ++ np ++ double side junctions. The idea of double sided devices could be understood as two solar cells connected back-to-back in parallel electrical connection, in which the current is doubled if the cell is illuminated from both sides by a V-shaped reflector. The cell is mounted to the reflector such that each face is inclined at an angle of 45 deg. C to each side of the reflector. The advantages of the new structure are: a) High power devices. b) Easy to fabricate. c) The cells are used vertically instead of horizontal use of regular solar cell which require large area to install. This is very important in power stations and especially for satellite installation. If the proposal is made real and proved to be experimentally feasible, it would be a new era for photovoltaic solar cells since the proposal has already been extended to even higher currents. The suggested structures could be stated as: n ++ pn ++ Vp ++ np ++ ;n ++ pn ++ Vn ++ pn ++ ORp ++ np ++ Vp ++ np ++ . These types of structures are formed in wedged shape to employ indirect illumination by either parabolic; conic or V-shaped reflectors. The advantages of these new forms are low cost; high power; less in size and space; self concentrating; ... etc. These proposals if it happens to find their ways to be achieved experimentally, I think they will offer a short path to commercial market and would have an incredible impact on solar cell technology and applications. (author). 12 refs, 5 figs

Design and Tests of the Silicon Sensors for the ZEUS Micro Vertex Detector

OpenAIRE

Dannheim, D.; Koetz, U.; Coldewey, C.; Fretwurst, E.; Garfagnini, A.; Klanner, R.; Martens, J.; Koffeman, E.; Tiecke, H.; Carlin, R.

2002-01-01

To fully exploit the HERA-II upgrade,the ZEUS experiment has installed a Micro Vertex Detector (MVD) using n-type, single-sided, silicon micro-strip sensors with capacitive charge division. The sensors have a readout pitch of 120 micrometers, with five intermediate strips (20 micrometer strip pitch). The designs of the silicon sensors and of the test structures used to verify the technological parameters, are presented. Results on the electrical measurements are discussed. A total of 1123 sen...

Non-invasive characterization and quality assurance of silicon micro-strip detectors using pulsed infrared laser

Science.gov (United States)

Ghosh, P.

2016-01-01

The Compressed Baryonic Matter (CBM) experiment at FAIR is composed of 8 tracking stations consisting of roughly 1300 double sided silicon micro-strip detectors of 3 different dimensions. For the quality assurance of prototype micro-strip detectors a non-invasive detector charaterization is developed. The test system is using a pulsed infrared laser for charge injection and characterization, called Laser Test System (LTS). The system is aimed to develop a set of characterization procedures which are non-invasive (non-destructive) in nature and could be used for quality assurances of several silicon micro-strip detectors in an efficient, reliable and reproducible way. The procedures developed (as reported here) uses the LTS to scan sensors with a pulsed infra-red laser driven by step motor to determine the charge sharing in-between strips and to measure qualitative uniformity of the sensor response over the whole active area. The prototype detector modules which are tested with the LTS so far have 1024 strips with a pitch of 58 μm on each side. They are read-out using a self-triggering prototype read-out electronic ASIC called n-XYTER. The LTS is designed to measure sensor response in an automatized procedure at several thousand positions across the sensor with focused infra-red laser light (spot size ≈ 12 μm, wavelength = 1060 nm). The pulse with a duration of ≈ 10 ns and power ≈ 5 mW of the laser pulse is selected such, that the absorption of the laser light in the 300 μm thick silicon sensor produces ≈ 24000 electrons, which is similar to the charge created by minimum ionizing particles (MIP) in these sensors. The laser scans different prototype sensors and various non-invasive techniques to determine characteristics of the detector modules for the quality assurance is reported.

The two sides of silicon detectors

International Nuclear Information System (INIS)

Devine, S.R.

2001-10-01

Results are presented on in situ irradiation of silicon detector's at cryogenic temperature. The results show that irradiation at cryogenic temperatures does not detrimentally effect a silicon detectors performance when compared to its irradiation at room temperature. Operation of silicon devices at cryogenic temperatures offers the advantage of reducing radiation-induced leakage current to levels of a few pA, while at 130K the Lazarus Effect plays an important role i.e. minimum voltage required for full depletion. Performing voltage scans on a 'standard' silicon pad detector pre- and post annealing, the charge collection efficiency was found to be 60% at 200V and 95% at 200V respectively. Time dependence measurements are presented, showing that for a dose of 6.5x10 14 p/cm 2 (450GeV protons) the time dependence of the charge collection efficiency is negligible. However, for higher doses, 1.2x10 15 p/cm 2 , the charge collection efficiency drops from an initial measured value of 67% to a stable value of 58% over a period of 15 minutes for reversed biased diodes. An analysis of the 'double junction' effect is also presented. A comparison between the Transient Current Technique and an X-ray technique is presented. The double junction has been observed in p + /n/n + silicon detectors after irradiation beyond 'type inversion', corresponding to a fluence equivalent to ∼3x10 13 cm -2 1MeV neutrons, producing p + /p/n + and essentially two p-n junctions within one device. With increasing bias voltage, as the electric field is extending into the detector bulk from opposite sides of the silicon detector, there are two distinct depletion regions that collect charge signal independently. Summing the signal charge from the two regions, one is able to reconstruct the initial energy of the incident particle. From Transient Current measurements it is apparent that E-field manipulation is possible by excess carrier injection, enabling a high enough E-field to extend across the

SiliPET: An ultra-high resolution design of a small animal PET scanner based on stacks of double-sided silicon strip detector

International Nuclear Information System (INIS)

Di Domenico, Giovanni; Zavattini, Guido; Cesca, Nicola; Auricchio, Natalia; Andritschke, Robert; Schopper, Florian; Kanbach, Gottfried

2007-01-01

We investigated with Monte Carlo simulations, using the EGSNrcMP code, the capabilities of a small animal PET scanner based on four stacks of double-sided silicon strip detectors. Each stack consists of 40 silicon detectors with dimension of 60x60x1 mm 3 and 128 orthogonal strips on each side. Two coordinates of the interaction are given by the strips, whereas the third coordinate is given by the detector number in the stack. The stacks are arranged to form a box of 5x5x6 cm 3 with minor sides opened; the box represents the minimal FOV of the scanner. The performance parameters of the SiliPET scanner have been estimated giving a (positron range limited) spatial resolution of 0.52 mm FWHM, and an absolute sensitivity of 5.1% at the center of system. Preliminary results of a proof of principle measurement done with the MEGA advanced Compton imager using a ∼1 mm diameter 22 Na source, showed a focal ray tracing FWHM of 1 mm

Mechanical studies towards a silicon micro-strip super module for the ATLAS inner detector upgrade at the high luminosity LHC

International Nuclear Information System (INIS)

Barbier, G; Cadoux, F; Clark, A; Favre, Y; Ferrere, D; Gonzalez-Sevilla, S; Iacobucci, G; Marra, D La; Perrin, E; Seez, W; Endo, M; Hanagaki, K; Hara, K; Ikegami, Y; Nakamura, K; Takubo, Y; Terada, S; Jinnouchi, O; Nishimura, R; Takashima, R

2014-01-01

It is expected that after several years of data-taking, the Large Hadron Collider (LHC) physics programme will be extended to the so-called High-Luminosity LHC, where the instantaneous luminosity will be increased up to 5 × 10 34  cm −2  s −1 . For the general-purpose ATLAS experiment at the LHC, a complete replacement of its internal tracking detector will be necessary, as the existing detector will not provide the required performance due to the cumulated radiation damage and the increase in the detector occupancy. The baseline layout for the new ATLAS tracker is an all-silicon-based detector, with pixel sensors in the inner layers and silicon micro-strip detectors at intermediate and outer radii. The super-module (SM) is an integration concept proposed for the barrel strip region of the future ATLAS tracker, where double-sided stereo silicon micro-strip modules (DSM) are assembled into a low-mass local support (LS) structure. Mechanical aspects of the proposed LS structure are described

The PASTA chip for the silicon micro strip sensor of the PANDA MVD

Energy Technology Data Exchange (ETDEWEB)

Riccardi, Alberto; Brinkmann, Kai-Thomas; Di Pietro, Valentino; Quagli, Tommaso; Schnell, Robert; Zaunick, Hans-Georg [II. Physikalisches Institut, Justus-Liebig-Universitaet, Giessen (Germany); Ritman, James; Stockmanns, Tobias; Zambanini, Andre [Forschungszentrum Juelich (Germany); Rivetti, Angelo; Rolo, Manuel [INFN Sezione di Torino (Italy); Collaboration: PANDA-Collaboration

2016-07-01

In the Micro Vertex Detector, which is the innermost detector of PANDA, there are two different types of sensors: hybrid pixel and double sided micro strips. My work is focused on the development of the ASIC readout for the strips, which in the PANDA experiment must cope with a hit rate up to 50 kHz per channel. The energy loss measurement of the particles crossing the silicon sensor is obtained by implementing the Time over Threshold technique. The first PASTA (PANDA Strip ASIC) prototype is based on a Time to Digital Converter with an analog clock interpolator which combines good time resolution with a low power consumption. A full size chip was developed in a 0.11μ m CMOS technology and delivered in Autumn 2015. It features 64 channels with both analog and digital parts, a digital global controller, LVDS drivers and integrated bias. In the presentation, an overview of PASTA and the results of the first tests is presented.

Performance of a beam telescope using double sided silicon microstrip detectors

International Nuclear Information System (INIS)

Fischer, P.; Menke, S.; Wermes, N.

1995-04-01

A beam telescope consisting of four double sided, DC coupled microstrip detectors with VLSI readout electronics has been built and tested in a 70 GeV μ - beam at CERN. A signal to noise ratio of 53:1 and a spatial resolution of 2.7 μm (junction side) and 4.8 μm (ohmic side) have been observed on the best detectors. A telescope performance for a particle track of σ xy =2-3 μm and σ slope =2-3 μrad on the front face of a test object was achieved. (orig.)

Performance of CMS TOB Silicon Detector Modules on a Double Sided Prototype ROD

CERN Document Server

Valls, Juan

2004-01-01

In this paper we summarize results of the performance of CMS TOB silicon detector modules mounted on the first assembled double-sided rod at CERN. Results are given in terms of noise, noise occupancies, signal to noise ratios and signal efficiencies. The noise figures from the rod optical setup are compared to the single module setup with electrical read out. Both test setups show a small or negligible common mode noise picked up by the modules. Similar noise results are obtained in both setups after full calibration gain values are applied. We measure total noise values of ~1600 electrons in peak mode and ~2600 electrons in deconvolution mode. Signal to noise ratios of the order of 15 (25) for deconvolution (peak) operation modes are found. The noise occupancies on the modules have important implications for the zero suppression algorithms which the CMS Tracker FEDs will use to reduce t he data volume flowing to the DAQ. The detector signal efficiencies and noise occupancies are also shown as a function of t...

Gecko-inspired bidirectional double-sided adhesives.

Science.gov (United States)

Wang, Zhengzhi; Gu, Ping; Wu, Xiaoping

2014-05-14

A new concept of gecko-inspired double-sided adhesives (DSAs) is presented. The DSAs, constructed by dual-angled (i.e. angled base and angled tip) micro-pillars on both sides of the backplane substrate, are fabricated by combinations of angled etching, mould replication, tip modification, and curing bonding. Two types of DSA, symmetric and antisymmetric (i.e. pillars are patterned symmetrically or antisymmetrically relative to the backplane), are fabricated and studied in comparison with the single-sided adhesive (SSA) counterparts through both non-conformal and conformal tests. Results indicate that the DSAs show controllable and bidirectional adhesion. Combination of the two pillar-layers can either amplify (for the antisymmetric DSA, providing a remarkable and durable adhesion capacity of 25.8 ± 2.8 N cm⁻² and a high anisotropy ratio of ∼8) or counteract (for the symmetric DSA, generating almost isotropic adhesion) the adhesion capacity and anisotropic level of one SSA (capacity of 16.2 ± 1.7 N cm⁻² and anisotropy ratio of ∼6). We demonstrate that these two DSAs can be utilized as a facile fastener for two individual objects and a small-scale delivery setup, respectively, complementing the functionality of the commonly studied SSA. As such, the double-sided patterning is believed to be a new branch in the further development of biomimetic dry adhesives.

New technique of skin embedded wire double-sided laser beam welding

Science.gov (United States)

Han, Bing; Tao, Wang; Chen, Yanbin

2017-06-01

In the aircraft industry, double-sided laser beam welding is an approved method for producing skin-stringer T-joints on aircraft fuselage panels. As for the welding of new generation aluminum-lithium alloys, however, this technique is limited because of high hot cracking susceptibility and strengthening elements' uneven distributions within weld. In the present study, a new technique of skin embedded wire double-sided laser beam welding (LBW) has been developed to fabricate T-joints consisting of 2.0 mm thick 2060-T8/2099-T83 aluminum-lithium alloys using eutectic alloy AA4047 filler wire. Necessary dimension parameters of the novel groove were reasonably designed for achieving crack-free welds. Comparisons were made between the new technique welded T-joint and conventional T-joint mainly on microstructure, hot crack, elements distribution features and mechanical properties within weld. Excellent crack-free microstructure, uniform distribution of silicon and superior tensile properties within weld were found in the new skin embedded wire double-sided LBW T-joints.

Micro benchtop optics by bulk silicon micromachining

Science.gov (United States)

Lee, Abraham P.; Pocha, Michael D.; McConaghy, Charles F.; Deri, Robert J.

2000-01-01

Micromachining of bulk silicon utilizing the parallel etching characteristics of bulk silicon and integrating the parallel etch planes of silicon with silicon wafer bonding and impurity doping, enables the fabrication of on-chip optics with in situ aligned etched grooves for optical fibers, micro-lenses, photodiodes, and laser diodes. Other optical components that can be microfabricated and integrated include semi-transparent beam splitters, micro-optical scanners, pinholes, optical gratings, micro-optical filters, etc. Micromachining of bulk silicon utilizing the parallel etching characteristics thereof can be utilized to develop miniaturization of bio-instrumentation such as wavelength monitoring by fluorescence spectrometers, and other miniaturized optical systems such as Fabry-Perot interferometry for filtering of wavelengths, tunable cavity lasers, micro-holography modules, and wavelength splitters for optical communication systems.

Formation and properties of the buried isolating silicon-dioxide layer in double-layer “porous silicon-on-insulator” structures

Energy Technology Data Exchange (ETDEWEB)

Bolotov, V. V.; Knyazev, E. V.; Ponomareva, I. V.; Kan, V. E., E-mail: kan@obisp.oscsbras.ru; Davletkildeev, N. A.; Ivlev, K. E.; Roslikov, V. E. [Russian Academy of Sciences, Omsk Scientific Center, Siberian Branch (Russian Federation)

2017-01-15

The oxidation of mesoporous silicon in a double-layer “macroporous silicon–mesoporous silicon” structure is studied. The morphology and dielectric properties of the buried insulating layer are investigated using electron microscopy, ellipsometry, and electrical measurements. Specific defects (so-called spikes) are revealed between the oxidized macropore walls in macroporous silicon and the oxidation crossing fronts in mesoporous silicon. It is found that, at an initial porosity of mesoporous silicon of 60%, three-stage thermal oxidation leads to the formation of buried silicon-dioxide layers with an electric-field breakdown strength of E{sub br} ~ 10{sup 4}–10{sup 5} V/cm. Multilayered “porous silicon-on-insulator” structures are shown to be promising for integrated chemical micro- and nanosensors.

Charge correlation measurements of double-sided direct-coupled silicon mirostrip detectors

International Nuclear Information System (INIS)

Wood, M.L.; Kuehler, J.F.; Kalbfleisch, G.R.; Kaplan, D.H.; Skubic, P.; Lucas, A.D.; Wilburn, C.D.

1991-01-01

Charge correlation measurements of several Micron 38 mm by 58 mm by 300 micron thick double-sided DC-coupled microstripe detectors have been made. They have been bench tested with a Sr-90 source, with the detectors operated at -22C. The correlation of the charges collected from both the diode ('holes') and the ohmic ('electrons') stripes are equal within a signal to noise resolution of 20:1 (i.e., 1,200 electrons noise) using common-mode subtracted double-correlated sampling with the Berkeley SVXD readout chip

Charge collection efficiency and resolution of an irradiated double-sided silicon microstrip detector operated at cryogenic temperatures

International Nuclear Information System (INIS)

Borer, K.; Janos, S.; Palmieri, V.G.; Buytaert, J.; Chabaud, V.; Chochula, P.; Collins, P.; Dijkstra, H.; Niinikoski, T.O.; Lourenco, C.; Parkes, C.; Saladino, S.; Ruf, T.; Granata, V.; Pagano, S.; Vitobello, F.; Bell, W.; Bartalini, P.; Dormond, O.; Frei, R.; Casagrande, L.; Bowcock, T.; Barnett, I.B.M.; Da Via, C.; Konorov, I.; Paul, S.; Schmitt, L.; Ruggiero, G.; Stavitski, I.; Esposito, A.

2000-01-01

This paper presents results on the measurement of the cluster shapes, resolution and charge collection efficiency of a double-sided silicon microstrip detector after irradiation with 24 GeV protons to a fluence of 3.5x10 14 p/cm 2 and operated at cryogenic temperatures. An empirical model is presented which describes the expected cluster shapes as a function of depletion depth, and is shown to agree with the data. It is observed that the clusters on the p-side broaden if the detector is under-depleted, leading to a degradation of resolution and efficiency. The model is used to make predictions for detector types envisaged for the LHC experiments. The results also show that at cryogenic temperature the charge collection efficiency varies depending on the operating conditions of the detector and can reach values of 100% at unexpectedly low bias voltage. By analysing the cluster shapes it is shown that these variations are due to changes in depletion depth. This phenomenon, known as the 'Lazarus effect', can be related to similar recent observations on diode behaviour

Evaluation of silicon micro strip detectors with large read-out pitch

International Nuclear Information System (INIS)

Senyo, K.; Yamamura, K.; Tsuboyama, T.; Avrillon, S.; Asano, Y.; Bozek, A.; Natkaniec, Z.; Palka, H.; Rozanska, M.; Rybicki, K.

1996-01-01

For the development of the silicon micro-strip detector with the pitch of the readout strips as large as 250 μm on the ohmic side, we made samples with different structures. Charge collection was evaluated to optimize the width of implant strips, aluminum read-out strips, and/or the read-out scheme among strips. (orig.)

Double-sided FoxFET biased microstrip detectors

International Nuclear Information System (INIS)

Allport, P.P.; Carter, J.R.; Dunwoody, U.C.; Gibson, V.; Goodrick, M.J.; Beck, G.A.; Carter, A.A.; Martin, A.J.; Pritchard, T.W.; Bullough, M.A.; Greenwood, N.M.; Lucas, A.D.; Wilburn, C.D.

1994-01-01

The use of the field effect transistor, integrated onto AC-coupled silicon detectors, as a novel technique for biasing the implanted p + strips [P.P. Allport et al., Nucl. Instr. and Meth. A 310 (1991) 155], was first employed for the OPAL microvertex detector. The detector has proved very successful, with ladders of three single-sided detectors showing signal/noise of 22 : 1 with MX5 readout electronics [P.P. Allport et al., Nucl. Instr. and Meth. A 324 (1993) 34; Nucl. Phys. B (Proc. Suppl.) 32 (1993) 208]. This technique has been extended to bias also the n + strips and p strips on the ohmic side of a double-sided detector [P.P. Allport et al., Nucl. Instr. and Meth. A, to be submitted]. Full-size detectors with orthogonal readout have been fabricated by Micron and tested with MX7 readout on both sides. Both the junction and ohmic sides of these detectors have similar signal/noise values to those for single-sided wafers [P.P. Allport et al., Nucl. Instr. and Meth. A, to be submitted]. Test structures have been irradiated with beta particles to study the radiation hardness of the devices, and probe station electrical measurements of the detectors and test structures are presented. ((orig.))

A time-based front-end ASIC for the silicon micro strip sensors of the bar PANDA Micro Vertex Detector

Science.gov (United States)

Di Pietro, V.; Brinkmann, K.-Th.; Riccardi, A.; Ritman, J.; Rivetti, A.; Rolo, M. D.; Stockmanns, T.; Zambanini, A.

2016-03-01

The bar PANDA (Antiproton Annihilation at Darmstadt) experiment foresees many detectors for tracking, particle identification and calorimetry. Among them, the innermost is the MVD (Micro Vertex Detector) responsible for a precise tracking and the reconstruction of secondary vertices. This detector will be built from both hybrid pixel (two inner barrels and six forward disks) and double-sided micro strip (two outer barrels and outer rim of the last two disks) silicon sensors. A time-based approach has been chosen for the readout ASIC of the strip sensors. The PASTA (bar PANDA Strip ASIC) chip aims at high resolution time-stamping and charge information through the Time over Threshold (ToT) technique. It benefits from a Time to Digital Converter (TDC) allowing a time bin width down to 50 ps. The analog front-end was designed to serve both n-type and p-type strips and the performed simulations show remarkable performances in terms of linearity and electronic noise. The TDC consists of an analog interpolator, a digital local controller, and a digital global controller as the common back-end for all of the 64 channels.

Fabrication of a vertical sidewall using double-sided anisotropic etching of 〈1 0 0〉 oriented silicon

International Nuclear Information System (INIS)

Kim, Hyun-Seok; Bang, Yong-Seung; Song, Eun-Seok; Kim, Yong-Kweon; Kim, Jung-Mu; Ji, Chang-Hyeon

2012-01-01

A double-sided wet etch process has been proposed to fabricate vertical structures in 〈1 0 0〉 oriented silicon substrate. Both sides of a {1 0 0} silicon wafer have been patterned identically along the 〈1 1 0〉 direction, and etched using potassium hydroxide (KOH) solution. By precisly controlling the etch time, using etch-timer structure and additive control, structures with smooth and vertical {1 1 0} sidewalls have been fabricated at the edges of a rectangular opening without undercut. Rectangular through-holes, bridges and cantilevers have been constructed using the proposed process. The measured average surface roughness of the vertical sidewall was 481 nm, which has been further reduced to 217 nm and 218 nm by postetching using a KOH–IPA and TMAH–Triton mixture, respectively. Slanted {4 1 1} planes exposed at the concave corners during the vertical etch process have been successfully removed or diminished by the postetching process. A bridge structure with a high aspect ratio of 39:1 has been fabricated, and cantilevers without undercutting were successfully constructed by applying the compensation technique. The proposed process can potentially be utilized in place of the deep reactive ion etching process for the fabrication of structures having vertical through-holes, such as through-silicon vias, high aspect ratio springs and filters for microfluidic applications. (paper)

Reprogramming hMSCs morphology with silicon/porous silicon geometric micro-patterns.

Science.gov (United States)

Ynsa, M D; Dang, Z Y; Manso-Silvan, M; Song, J; Azimi, S; Wu, J F; Liang, H D; Torres-Costa, V; Punzon-Quijorna, E; Breese, M B H; Garcia-Ruiz, J P

2014-04-01

Geometric micro-patterned surfaces of silicon combined with porous silicon (Si/PSi) have been manufactured to study the behaviour of human Mesenchymal Stem Cells (hMSCs). These micro-patterns consist of regular silicon hexagons surrounded by spaced columns of silicon equilateral triangles separated by PSi. The results show that, at an early culture stage, the hMSCs resemble quiescent cells on the central hexagons with centered nuclei and actin/β-catenin and a microtubules network denoting cell adhesion. After 2 days, hMSCs adapted their morphology and cytoskeleton proteins from cell-cell dominant interactions at the center of the hexagonal surface. This was followed by an intermediate zone with some external actin fibres/β-catenin interactions and an outer zone where the dominant interactions are cell-silicon. Cells move into silicon columns to divide, migrate and communicate. Furthermore, results show that Runx2 and vitamin D receptors, both specific transcription factors for skeleton-derived cells, are expressed in cells grown on micropatterned silicon under all observed circumstances. On the other hand, non-phenotypic alterations are under cell growth and migration on Si/PSi substrates. The former consideration strongly supports the use of micro-patterned silicon surfaces to address pending questions about the mechanisms of human bone biogenesis/pathogenesis and the study of bone scaffolds.

Micro-discharge noise and radiation damage of silicon microstrip sensors

International Nuclear Information System (INIS)

Ohsugi, T.; Iwata, Y.; Ohyama, H.; Ohmoto, T.; Yoshikawa, M.; Handa, T.; Kurino, K.; Fujita, K.; Kitabayashi, H.; Tamura, N.; Hatakenaka, T.; Maeohmichi, M.; Takahata, M.; Nakao, M.; Iwasaki, H.; Kohriki, T.; Terada, S.; Unno, Y.; Takashima, R.; Yamamoto, K.; Yamamura, K.

1996-01-01

We have examined experimentally some existing ideas for improving the radiation hardness of silicon microstrip sensors. We confirm that the extended electrode and the deep implant-strip proposed on the basis of simulation studies works effectively to suppress micro-discharge as well as junction breakdown of the bias or guard ring. For an integrated coupling capacitor a double layer structure of SiO 2 and Si 3 N 4 provides better radiation hardness than that of single SiO 2 coupling in our design conditions. The onset voltage of the micro-discharge on the bias/guard ring has been studied for an extended electrode and a floating guard ring. (orig.)

Study of Pneumatic Servo Loading System in Double-Sided Polishing

International Nuclear Information System (INIS)

Qian, N; Ruan, J; Li, W

2006-01-01

The precise double-sided polishing process is one of the main methods to get the ultra-smooth surface of workpiece. In double-sided polishing machine, a loading system is required to be able to precisely control the load superimposed on the workpiece, while the polishing is being carried out. A pneumatic servo loading system is proposed for this purpose. In the pneumatic servo system, the servo valve, which acts both the electrical to mechanical converter and the power amplifier, has a substantial influence on the performance of the loading system. Therefore a specially designed pneumatic digital servo valve is applied in the control system. In this paper, the construction of the pneumatic servo loading system in double-sided polishing machine and control strategy associated with the digital servo valve are first addressed. The mathematical model of the system established and the hardware of the pneumatic servo system is designed. Finally, the experiments are carried out by measuring the practical load on the workpiece and the quality of the surface finish. It is demonstrated that the error rate of load is less than 5% and a super-smooth surface of silicon wafer with roughness Ra 0.401 nm can be obtained

A time-based front-end ASIC for the silicon micro strip sensors of the P-bar ANDA Micro Vertex Detector

International Nuclear Information System (INIS)

Pietro, V. Di; Brinkmann, K.-Th.; Riccardi, A.; Ritman, J.; Stockmanns, T.; Zambanini, A.; Rivetti, A.; Rolo, M.D.

2016-01-01

The P-bar ANDA (Antiproton Annihilation at Darmstadt) experiment foresees many detectors for tracking, particle identification and calorimetry. Among them, the innermost is the MVD (Micro Vertex Detector) responsible for a precise tracking and the reconstruction of secondary vertices. This detector will be built from both hybrid pixel (two inner barrels and six forward disks) and double-sided micro strip (two outer barrels and outer rim of the last two disks) silicon sensors. A time-based approach has been chosen for the readout ASIC of the strip sensors. The PASTA ( P-bar ANDA Strip ASIC) chip aims at high resolution time-stamping and charge information through the Time over Threshold (ToT) technique. It benefits from a Time to Digital Converter (TDC) allowing a time bin width down to 50 ps. The analog front-end was designed to serve both n-type and p-type strips and the performed simulations show remarkable performances in terms of linearity and electronic noise. The TDC consists of an analog interpolator, a digital local controller, and a digital global controller as the common back-end for all of the 64 channels

Study of double porous silicon surfaces for enhancement of silicon solar cell performance

Science.gov (United States)

Razali, N. S. M.; Rahim, A. F. A.; Radzali, R.; Mahmood, A.

2017-09-01

In this work, design and simulation of double porous silicon surfaces for enhancement of silicon solar cell is carried out. Both single and double porous structures are constructed by using TCAD ATHENA and TCAD DEVEDIT tools of the SILVACO software respectively. After the structures were created, I-V characteristics and spectral response of the solar cell were extracted using ATLAS device simulator. Finally, the performance of the simulated double porous solar cell is compared with the performance of both single porous and bulk-Si solar cell. The results showed that double porous silicon solar cell exhibited 1.8% efficiency compared to 1.3% and 1.2% for single porous silicon and bulk-Si solar cell.

Porous silicon formation by hole injection from a back side p+/n junction for electrical insulation applications

International Nuclear Information System (INIS)

Fèvre, A; Menard, S; Defforge, T; Gautier, G

2016-01-01

In this paper, we propose to study the formation of porous silicon (PS) in low doped (1 × 10 14 cm −3 ) n-type silicon through hole injection from a back side p + /n junction in the dark. This technique is investigated within the framework of electrical insulation. Three different types of junctions are investigated. The first one is an epitaxial n-type layer grown on p + doped silicon wafer. The two other junctions are carried out by boron diffusion leading to p + regions with junction depths of 20 and 115 μm. The resulting PS morphology is a double layer with a nucleation layer (NL) and macropores fully filled with mesoporous material. This result is unusual for low doped n-type silicon. Morphology variations are described depending on the junction formation process, the electrolyte composition, the anodization current density and duration. In order to validate the more interesting industrial potentialities of the p + /n injection technique, a comparison is achieved with back side illumination in terms of resulting morphology and experiments confirm comparable results. Electrical characterizations of the double layer, including NL and fully filled macropores, are then performed. To our knowledge, this is the first electrical investigation in low doped n type silicon with this morphology. Compared to the bulk silicon, the measured electrical resistivities are 6–7 orders of magnitude higher at 373 K. (paper)

A silicon integrated micro nano-positioning XY-stage for nano-manipulation

International Nuclear Information System (INIS)

Sun Lining; Wang Jiachou; Rong Weibin; Li Xinxin; Bao Haifei

2008-01-01

An integrated micro XY-stage with a 2 × 2 mm 2 movable table is designed and fabricated for application in nanometer-scale operation and nanometric positioning precision. The device integrates the functions of both actuating and sensing in a monolithic chip and is mainly composed of a silicon-based XY-stage, comb-drive actuator and a displacement sensor, which are developed by using double-sided bulk-micromachining technology. The high-aspect-ratio comb-driven XY-stage is achieved by deep reactive ion etching (DRIE) on both sides of the wafer. The displacement sensor is formed on four vertical sidewall surface piezoresistors with a full Wheatstone bridge circuit, where a novel fabrication process of a vertical sidewall surface piezoresistor is proposed. Comprehensive design and analysis of the comb actuator, the piezoresistive displacement sensor and the XY-stage are given in full detail, and the experimental results verify the design and fabrication of the device. The final realization of the device shows that the sensitivity of the fabricated piezoresistive sensors is better than 1.17 mV µm −1 without amplification, and the linearity is better than 0.814%. Under 28.5 V driving voltage, a ±10 µm single-axis displacement is measured without crosstalk and the resonant frequency is measured at 983 Hz in air

Linear signal processing using silicon micro-ring resonators

DEFF Research Database (Denmark)

Peucheret, Christophe; Ding, Yunhong; Ou, Haiyan

2012-01-01

We review our recent achievements on the use of silicon micro-ring resonators for linear optical signal processing applications, including modulation format conversion, phase-to-intensity modulation conversion and waveform shaping.......We review our recent achievements on the use of silicon micro-ring resonators for linear optical signal processing applications, including modulation format conversion, phase-to-intensity modulation conversion and waveform shaping....

Preparation of micro-pored silicone elastomer through radiation crosslinking

International Nuclear Information System (INIS)

Gao Xiaoling; Gu Mei; Xie Xubing; Huang Wei

2013-01-01

The radiation crosslinking was adopted to prepare the micro-pored silicone elastomer, which was performed by vulcanization and foaming respectively. Radiation crosslinking is a new method to prepare micro-pored material with high performance by use of radiation technology. Silicon dioxide was used as filler, and silicone elastomer was vulcanized by electron beams, then the micro-pored material was made by heating method at a high temperature. The effects of absorbed dose and filler content on the performance and morphology were investigated. The structure and distribution of pores were observed by SEM. The results show that the micro-pored silicon elastomer can be prepared successfully by controlling the absorbed dose and filler content. It has a smooth surface similar to a rubber meanwhile the pores are round and unconnected to each other with the minimum size of 14 μm. And the good mechanical performance can be suitable for further uses. (authors)

Development and operation of a novel PC-based high speed beam telescope for particle tracking using double sided silicon microstrip detectors

International Nuclear Information System (INIS)

Treis, J.

2002-08-01

A PC based high speed silicon microstrip beam telescope consisting of several independent modules is presented. Every module contains an AC-coupled double sided silicon microstrip sensor and a complete set of analog and digital signal processing electronics. A digital bus connects the modules with the DAQ PC. A trigger logic unit coordinates the operation of all modules of the telescope. The system architecture allows easy integration of any kind of device under test into the data acquisition chain. Signal digitization, pedestal correction, hit detection and zero suppression are done by hardware inside the modules, so that the amount of data per event is reduced by a factor of 80 compared to conventional readout systems. In combination with a two level data acquisition scheme, this allows event rates up to 7.6 kHz. This is a factor of 40 faster than conventional VME based beam telescopes while comparable analog performance is maintained achieving signal to noise ratios of up to 70:1. The telescope has been tested in the SPS testbeam at CERN. It has been adopted as the reference instrument for testbeam studies for the ATLAS pixel detector development. (orig.)

Double side electroplating for applying beta voltaic with sandwich structure

International Nuclear Information System (INIS)

Choi, Sang Moo; Uhm, Young Rang; Son, Kwang Jae; Kim, Jong Bum; Kim, Jin Joo; Park, Jong Han

2015-01-01

As a result, a variety of nuclear-based small-scale power sources have been developed with varying degrees of success and maturity. A nuclear battery with diode junction is a device that converts nuclear radiation directly to electric power. The mechanism of a nuclear battery is same as the P-N junction diode for solar cell application. The photovoltaic is operated by converted photons to electrical energy in the junction. In betavoltaic battery, beta particles are collected and converted to electrical energy as similar principle as photovoltaic. A very low current, order of nano or micro amperes, is generated in devices. The difference of the short circuit current between the pre-deposition and post deposition of Ni-63 was found to be 5 nA. This value is very low to apply device junction. To fabricate betavoltaic, Ni-63 should be coated on the double side of substrate. The bath was primarily composed of 0.2 M Ni ions, prepared by dissolving Ni metal particles in HCl. The prototype for electroplating radioactive Ni-63 on double side has been established

Double side electroplating for applying beta voltaic with sandwich structure

Energy Technology Data Exchange (ETDEWEB)

Choi, Sang Moo; Uhm, Young Rang; Son, Kwang Jae; Kim, Jong Bum; Kim, Jin Joo; Park, Jong Han [Korea Atomic Energy Research Institute, Daejeon (Korea, Republic of)

2015-05-15

As a result, a variety of nuclear-based small-scale power sources have been developed with varying degrees of success and maturity. A nuclear battery with diode junction is a device that converts nuclear radiation directly to electric power. The mechanism of a nuclear battery is same as the P-N junction diode for solar cell application. The photovoltaic is operated by converted photons to electrical energy in the junction. In betavoltaic battery, beta particles are collected and converted to electrical energy as similar principle as photovoltaic. A very low current, order of nano or micro amperes, is generated in devices. The difference of the short circuit current between the pre-deposition and post deposition of Ni-63 was found to be 5 nA. This value is very low to apply device junction. To fabricate betavoltaic, Ni-63 should be coated on the double side of substrate. The bath was primarily composed of 0.2 M Ni ions, prepared by dissolving Ni metal particles in HCl. The prototype for electroplating radioactive Ni-63 on double side has been established.

Characterization of silicon micro-strip sensors with a pulsed infra-red laser system for the CBM experiment at FAIR

Energy Technology Data Exchange (ETDEWEB)

Ghosh, Pradeep [Goethe University, Frankfurt am Main (Germany); GSI Helmholtz Center for Heavy Ion Research GmbH, Darmstadt (Germany); Eschke, Juergen [GSI Helmholtz Center for Heavy Ion Research GmbH, Darmstadt (Germany); Facility for Anti-proton and Ion Research, GmbH, Darmstadt (Germany); Collaboration: CBM-Collaboration

2015-07-01

The Silicon Tracking System (STS) of the CBM experiment at FAIR is composed of 8 tracking stations comprising of 1292 double-sided silicon micro-strip sensors. A Laser Test System (LTS) has been developed for the quality assurance of prototype sensors. The aim is to scan sensors with a pulsed infra-red laser driven by step motor to determine the charge sharing in-between strips and to measure qualitative uniformity of the sensor response over the whole active area. Several prototype sensors with strip pitch of 50 and 58 μm have been tested, as well as a prototype module with realistic mechanical arrangement of sensor and read-out cables. The LTS is designed to measure sensor response in an automatized procedure across the sensor with focused laser beam (spot-size ∼ 12 μm, wavelength = 1060 nm). The pulse with duration (∼ 10 ns) and power (∼ 5 mW) of the laser pulses is selected such, that the absorption of the laser light in the 300 μm thick silicon sensors produces a number of about 24000 electrons, which is similar to the charge created by minimum ionizing particles (MIP) in these sensors. Results from laser scans of prototype sensors and detector module are reported.

Silicon epitaxy on textured double layer porous silicon by LPCVD

International Nuclear Information System (INIS)

Cai Hong; Shen Honglie; Zhang Lei; Huang Haibin; Lu Linfeng; Tang Zhengxia; Shen Jiancang

2010-01-01

Epitaxial silicon thin film on textured double layer porous silicon (DLPS) was demonstrated. The textured DLPS was formed by electrochemical etching using two different current densities on the silicon wafer that are randomly textured with upright pyramids. Silicon thin films were then grown on the annealed DLPS, using low-pressure chemical vapor deposition (LPCVD). The reflectance of the DLPS and the grown silicon thin films were studied by a spectrophotometer. The crystallinity and topography of the grown silicon thin films were studied by Raman spectroscopy and SEM. The reflectance results show that the reflectance of the silicon wafer decreases from 24.7% to 11.7% after texturing, and after the deposition of silicon thin film the surface reflectance is about 13.8%. SEM images show that the epitaxial silicon film on textured DLPS exhibits random pyramids. The Raman spectrum peaks near 521 cm -1 have a width of 7.8 cm -1 , which reveals the high crystalline quality of the silicon epitaxy.

Characterization of silicon micro-strip sensors with a pulsed infra-red laser system for the CBM experiment at FAIR

International Nuclear Information System (INIS)

Ghosh, P.

2015-01-01

The Compressed Baryonic Matter (CBM) experiment at FAIR is composed of 8 tracking stations consisting of 1292 double sided silicon micro-strip sensors. For the quality assurance of produced prototype sensors a laser test system (LTS) has been developed. The aim of the LTS is to scan sensors with a pulsed infra-red laser driven by step motor to determine the charge sharing in-between strips and to measure qualitative uniformity of the sensor response over the whole active area. The prototype sensors which are tested with the LTS so far have 256 strips with a pitch of 50 μm on each side. They are read-out using a self-triggering prototype read-out electronic ASIC called n-XYTER. The LTS is designed to measure sensor response in an automatized procedure at several thousand positions across the sensor with focused infra-red laser light (spot size ≈ 12 μm , wavelength = 1060 nm). The pulse with duration (≈ 10 ns) and power (≈ 5 mW) of the laser pulses is selected such, that the absorption of the laser light in the 300 μm thick silicon sensors produces a number of about 24000 electrons, which is similar to the charge created by minimum ionizing particles (MIP) in these sensors. Laser scans different prototype sensors is reported

Study on structural properties of epitaxial silicon films on annealed double layer porous silicon

International Nuclear Information System (INIS)

Yue Zhihao; Shen Honglie; Cai Hong; Lv Hongjie; Liu Bin

2012-01-01

In this paper, epitaxial silicon films were grown on annealed double layer porous silicon by LPCVD. The evolvement of the double layer porous silicon before and after thermal annealing was investigated by scanning electron microscope. X-ray diffraction and Raman spectroscopy were used to investigate the structural properties of the epitaxial silicon thin films grown at different temperature and different pressure. The results show that the surface of the low-porosity layer becomes smooth and there are just few silicon-bridges connecting the porous layer and the substrate wafer. The qualities of the epitaxial silicon thin films become better along with increasing deposition temperature. All of the Raman peaks of silicon films with different deposition pressure are situated at 521 cm -1 under the deposition temperature of 1100 °C, and the Raman intensity of the silicon film deposited at 100 Pa is much closer to that of the monocrystalline silicon wafer. The epitaxial silicon films are all (4 0 0)-oriented and (4 0 0) peak of silicon film deposited at 100 Pa is more symmetric.

Towards micro-assembly of hybrid MOEMS components on a reconfigurable silicon free-space micro-optical bench

International Nuclear Information System (INIS)

Bargiel, S; Gorecki, C; Rabenorosoa, K; Clévy, C; Lutz, P

2010-01-01

The 3D integration of hybrid chips is a viable approach for the micro-optical technologies to reduce the costs of assembly and packaging. In this paper a technology platform for the hybrid integration of MOEMS components on a reconfigurable silicon free-space micro-optical bench (FS-MOB) is presented. In this approach a desired optical component (e.g. micromirror, microlens) is integrated with a removable and adjustable silicon holder which can be manipulated, aligned and fixed in the precisely etched rail of the silicon baseplate by use of a robotic micro-assembly station. An active-based gripping system allows modification of the holder position on the baseplate with nanometre precision. The fabrication processes of the micromachined parts of the micro-optical bench, based on bulk micromachining of standard silicon wafer and SOI wafer, are described. The successful assembly of the holders, equipped with a micromirror and a refractive glass ball microlens, on the baseplate rail is demonstrated.

Micromachining of buried micro channels in silicon

NARCIS (Netherlands)

de Boer, Meint J.; Tjerkstra, R.W.; Berenschot, Johan W.; Jansen, Henricus V.; Burger, G.J.; Burger, G.J.; Gardeniers, Johannes G.E.; Elwenspoek, Michael Curt; van den Berg, Albert

A new method for the fabrication of micro structures for fluidic applications, such as channels, cavities, and connector holes in the bulk of silicon wafers, called buried channel technology (BCT), is presented in this paper. The micro structures are constructed by trench etching, coating of the

Silicon micro-masonry using elastomeric stamps for three-dimensional microfabrication

International Nuclear Information System (INIS)

Keum, Hohyun; Eisenhaure, Jeffrey D; Kim, Seok; Carlson, Andrew; Ning, Hailong; Mihi, Agustin; Braun, Paul V; Rogers, John A

2012-01-01

We present a micromanufacturing method for constructing microsystems, which we term ‘micro-masonry’ based on individual manipulation, influenced by strategies for deterministic materials assembly using advanced forms of transfer printing. Analogous to masonry in construction sites, micro-masonry consists of the preparation, manipulation, and binding of microscale units to assemble microcomponents and microsystems. In this paper, for the purpose of demonstration, we used microtipped elastomeric stamps as manipulators and built three dimensional silicon microstructures. Silicon units of varied shapes were fabricated in a suspended format on donors, retrieved, delivered, and placed on a target location on a receiver using microtipped stamps. Annealing of the assembled silicon units permanently bound them and completed the micro-masonry procedure. (paper)

Silicon micro-fluidic cooling for NA62 GTK pixel detectors

CERN Document Server

Romagnoli, G; Brunel, B; Catinaccio, A; Degrange, J; Mapelli, A; Morel, M; Noel, J; Petagna, P

2015-01-01

Silicon micro-channel cooling is being studied for efficient thermal management in application fields such as high power computing and 3D electronic integration. This concept has been introduced in 2010 for the thermal management of silicon pixel detectors in high energy physics experiments. Combining the versatility of standard micro-fabrication processes with the high thermal efficiency typical of micro-fluidics, it is possible to produce effective thermal management devices that are well adapted to different detector configurations. The production of very thin cooling devices in silicon enables a minimization of material of the tracking sensors and eliminates mechanical stresses due to the mismatch of the coefficient of thermal expansion between detectors and cooling systems. The NA62 experiment at CERN will be the first high particle physics experiment that will install a micro-cooling system to perform the thermal management of the three detection planes of its Gigatracker pixel detector.

Micro-spectroscopy on silicon wafers and solar cells

Directory of Open Access Journals (Sweden)

Gundel Paul

2011-01-01

Full Text Available Abstract Micro-Raman (μRS and micro-photoluminescence spectroscopy (μPLS are demonstrated as valuable characterization techniques for fundamental research on silicon as well as for technological issues in the photovoltaic production. We measure the quantitative carrier recombination lifetime and the doping density with submicron resolution by μPLS and μRS. μPLS utilizes the carrier diffusion from a point excitation source and μRS the hole density-dependent Fano resonances of the first order Raman peak. This is demonstrated on micro defects in multicrystalline silicon. In comparison with the stress measurement by μRS, these measurements reveal the influence of stress on the recombination activity of metal precipitates. This can be attributed to the strong stress dependence of the carrier mobility (piezoresistance of silicon. With the aim of evaluating technological process steps, Fano resonances in μRS measurements are analyzed for the determination of the doping density and the carrier lifetime in selective emitters, laser fired doping structures, and back surface fields, while μPLS can show the micron-sized damage induced by the respective processes.

Hybrid integrated single-wavelength laser with silicon micro-ring reflector

Science.gov (United States)

Ren, Min; Pu, Jing; Krishnamurthy, Vivek; Xu, Zhengji; Lee, Chee-Wei; Li, Dongdong; Gonzaga, Leonard; Toh, Yeow T.; Tjiptoharsono, Febi; Wang, Qian

2018-02-01

A hybrid integrated single-wavelength laser with silicon micro-ring reflector is demonstrated theoretically and experimentally. It consists of a heterogeneously integrated III-V section for optical gain, an adiabatic taper for light coupling, and a silicon micro-ring reflector for both wavelength selection and light reflection. Heterogeneous integration processes for multiple III-V chips bonded to an 8-inch Si wafer have been developed, which is promising for massive production of hybrid lasers on Si. The III-V layer is introduced on top of a 220-nm thick SOI layer through low-temperature wafer-boning technology. The optical coupling efficiency of >85% between III-V and Si waveguide has been achieved. The silicon micro-ring reflector, as the key element of the hybrid laser, is studied, with its maximized reflectivity of 85.6% demonstrated experimentally. The compact single-wavelength laser enables fully monolithic integration on silicon wafer for optical communication and optical sensing application.

Electrolytic in process dressing (ELID) applied to double side grinding of ceramic materials

Science.gov (United States)

Spanu, Cristian E.

The objective of the present work is to design, optimize, and validate an electrolytic in-process dressing (ELID)-assisted double side grinding process for finishing advanced ceramic components. To attain this objective, an original ELID double side grinding system was designed, fabricated, and operated at Precision Micro-Machining Center at The University of Toledo, Ohio. The ELID technique was selected from among other options to assure the in-situ dressing of the metal-bonded superabrasive grinding wheel and to maintain its cutting ability throughout the operation, which is, otherwise, a challenging enterprise. Optimizing the ELID double side grinding process parameters is an important goal of the present study. To achieve this goal, a complex integrated model was developed and validated through extensive experimental testing. Four analytical computerized models were developed and integrated: (1) an improved kinematic model of double side grinding accounting for workpiece rotation, which is used to simulate the grinding trajectories; (2) a microscopic model of the interaction between a single diamond grit and the work surface, which is used to predict the volume of material removed; (3) a stochastic model for the topographical characterization of the superabrasive wheel, which leads to a new prediction method of depth of indentation; and (4) an electrolytic oxidation model, which explains the dynamics of the oxide layer. In order to validate the models and to confirm the optimized process, experimental tests were conducted under different conditions: with vitrified and metallic bond grinding wheels, with various average grain sizes of diamond grits, with different superabrasive concentrations, with different grinding fluids, with and without ELID assistance. Our findings show that an optimized ceramic double side grinding process using fine diamond grit is more efficient than lapping in producing very fine surfaces. The experiments confirmed the superiority of

Enhancement of silicon using micro-patterned surfaces of thin films

Directory of Open Access Journals (Sweden)

E Kaivosoja

2010-04-01

Full Text Available Micro-textured biomaterials might enhance cytocompatibility of silicon-based micro-electro-mechanical system (bio-MEMS dummies. Photolithography-physical vapour deposition was used to produce diamond-like carbon (DLC or Ti squares and circles on silicon, and also their inverse replicas; then DLC and Ti were compared for their guiding potential, using a SaOS-2 cell model. Scanning electron microscopy at 48 hours indicated cells were well-spread on large-sized patterns (several cells on one pattern and assumed the geometrical architecture of underlying features. Medium-sized patterns (slightly smaller than solitary indicator cells were inhabited by singular cells, which stretched from one island to another, assuming longitudinal or branching morphologies. On small-sized patterns (much smaller than individual cells cells covered large micro-textured areas, but cellular filopodia bypassed the bare silicon. Immunofluorescence and confocal laser scanning microscopy indicated that the actin cytoskeleton and vinculin-containing adhesion junctions were present on the patterned areas, but not on the bare silicon. Cell density/coverage disclosed a 3.4-3.7-fold preference for the biomaterial patterns over silicon substrate (p < 0.001. Differences in the cellular response between materials were lost at 120 hours when cells were confluent. The working hypothesis was proven; enhancement by micro-patterning depends on the pattern size, shape and material and can be used to improve biocompatibility during the initial integration phase of the device.

Central tracker for BM@N experiment based on double side Si-microstrip detectors

Science.gov (United States)

Kovalev, Yu.; Kapishin, M.; Khabarov, S.; Shafronovskaia, A.; Tarasov, O.; Makankin, A.; Zamiatin, N.; Zubarev, E.

2017-07-01

Design of central tracker system based on Double-Sided Silicon Detectors (DSSD) for BM@N experiment is described. A coordinate plane with 10240 measuring channels, pitch adapter, reading electronics was developed. Each element was tested and assembled into a coordinate plane. The first tests of the plane with 106Ru source were carried out before installation for the BM@N experiment. The results of the study indicate that noisy channels and inefficient channels are less than 3%. In general, single clusters 87% (one group per module of consecutive strips) and 75% of clusters with a width equal to one strip.

[A micro-silicon multi-slit spectrophotometer based on MEMS technology].

Science.gov (United States)

Hao, Peng; Wu, Yi-Hui; Zhang, Ping; Liu, Yong-Shun; Zhang, Ke; Li, Hai-Wen

2009-06-01

A new mini-spectrophotometer was developed by adopting micro-silicon slit and pixel segmentation technology, and this spectrophotometer used photoelectron diode array as the detector by the back-dividing-light way. At first, the effect of the spectral bandwidth on the tested absorbance linear correlation was analyzed. A theory for the design of spectrophotometer's slit was brought forward after discussing the relationships between spectrophotometer spectrum band width and pre-and post-slits width. Then, the integrative micro-silicon-slit, which features small volume, high precision, and thin thickness, was manufactured based on the MEMS technology. Finally, a test was carried on linear absorbance solution by this spectrophotometer. The final result showed that the correlation coefficients were larger than 0.999, which means that the new mini-spectrophotometer with micro-silicon slit pixel segmentation has an obvious linear correlation.

The Silicon Tracking System of the CBM experiment at FAIR

Directory of Open Access Journals (Sweden)

Teklishyn Maksym

2018-01-01

Full Text Available The Silicon Tracking System (STS is the central detector in the Compressed Baryonic Matter (CBM experiment at FAIR. Operating in the 1Tm dipole magnetic field, the STS will enable pile-up free detection and momentum measurement of the charged particles originating from beam-target nuclear interactions at rates up to 10 MHz. The STS consists of 8 tracking stations based on double-sided silicon micro-strip sensors equipped with fast, self-triggering read-out electronics. With about two million read-out channels, the STS will deliver a high-rate stream of time-stamped data that is transferred to a computing farm for on-line event determination and analysis. The functional building block is a detector module consisting of a sensor, micro-cables and two front-end electronics boards. In this contribution, the development status of the STS components and the system integration is discussed and an outlook on the detector construction is given.

Investigation of silicon sensors quality as a function of the ohmic side processing technology

CERN Document Server

Bloch, P; Golubkov, S A; Golutvin, I A; Egorov, N; Konjkov, K; Kozlov, Y; Peisert, Anna; Sidorov, A; Zamiatin, N I; Cheremuhin, A E

2002-01-01

Silicon sensors designed for the CMS Preshower detector must have a high breakdown voltage in order to be fully efficient after a strong irradiation. Studies made by several groups left bracket 1,2,3 right bracket have underlined the importance of the p**+ side geometrical parameters, such as the metal width and the number and spacing of guard rings. We have in addition investigated the effects related to the ohmic side processing and found that the breakdown voltage depends strongly on the depth of the effective "dead" n**+ layer. By increasing this thickness from mum to 2.5mum, the fraction of sensors with breakdown voltage higher than 500V increased from 22% to more than 80%. On the other hand, it was noticed that the starting surface quality of the wafer (double side polished or single side polished) does not affect the detectors parameters for a given production technology. The thick n**+-layer protects against initial wafer surface and defects caused by the technological treatment during the detector pr...

A high performance micro-pressure sensor based on a double-ended quartz tuning fork and silicon diaphragm in atmospheric packaging

International Nuclear Information System (INIS)

Cheng, Rongjun; Li, Cun; Zhao, Yulong; Li, Bo; Tian, Bian

2015-01-01

A resonant micro-pressure sensor based on a double-ended quartz tuning fork (DEQTF) and bossed silicon diaphragm in atmospheric packaging is presented. To achieve vacuum-free packaging with a high quality factor, the DEQTF is designed to resonate in an anti-phase vibration mode in a plane that is under the effect of slide-film damping. The feasibility is demonstrated by theoretical analysis and a finite element simulation. The dimensions of the DEQTF and diaphragm are optimized in accordance with the principles of improving sensitivity and minimizing energy dissipation. The sensor chip is fabricated using quartz and silicon micromachining technologies, and simply packaged in a stainless steel shell with standard atmosphere. The experimental setup is established for the calibration, where an additional sensor prototype without a pressure port is introduced as a frequency reference. By detecting the frequency difference of the tested sensor and reference sensor, the influences of environmental factors such as temperature and shocks on measuring accuracy are eliminated effectively. Under the action of a self-excitation circuit, static performance is obtained. The sensitivity of the sensor is 299 kHz kPa −1 in the operating range of 0–10 kPa at room temperature. Testing results shows a nonlinearity of 0.0278%FS, a hysteresis of 0.0207%FS and a repeatability of 0.0375%FS. The results indicate that the proposed sensor has favorable features, which provides a cost-effective and high-performance approach for low pressure measurement. (paper)

Precision scans of the Pixel cell response of double sided 3D Pixel detectors to pion and X-ray beams

CERN Document Server

Mac Raighne, A; Crossley, M; Alianelli, L; Lozano, M; Dumps, R; Fleta, C; Collins, P; Rodrigues, E; Sawhney, K J S; Tlustos, L; Pennicard, D; Buytaert, J; Stewart, G; Parkes, C; Eklund, L; Campbell, M; Marchal, J; Akiba, K; Pellegrini, G; Llopart, X; Plackett, R; Maneuski, D; Gligorov, V V; Tartoni, N; Nicol, M; Bates, R; Gallas, A; Gimenez, E N; van Beuzekom, M; John, M

2011-01-01

Three-dimensional (3D) silicon sensors offer potential advantages over standard planar sensors for radiation hardness in future high energy physics experiments and reduced charge-sharing for X-ray applications, but may introduce inefficiencies due to the columnar electrodes. These inefficiencies are probed by studying variations in response across a unit pixel cell in a 55 m m pitch double-sided 3D pixel sensor bump bonded to TimePix and Medipix2 readout ASICs. Two complementary characterisation techniques are discussed: the first uses a custom built telescope and a 120GeV pion beam from the Super Proton Synchrotron (SPS) at CERN; the second employs a novel technique to illuminate the sensor with a micro-focused synchrotron X-ray beam at the Diamond Light Source, UK. For a pion beam incident perpendicular to the sensor plane an overall pixel efficiency of 93.0 +/- 0.5\\% is measured. After a 10 degrees rotation of the device the effect of the columnar region becomes negligible and the overall efficiency rises ...

Linear all-optical signal processing using silicon micro-ring resonators

DEFF Research Database (Denmark)

Ding, Yunhong; Ou, Haiyan; Xu, Jing

2016-01-01

Silicon micro-ring resonators (MRRs) are compact and versatile devices whose periodic frequency response can be exploited for a wide range of applications. In this paper, we review our recent work on linear all-optical signal processing applications using silicon MRRs as passive filters. We focus...

Same-Side Platinum Electrodes for Metal Assisted Etching of Porous Silicon

Science.gov (United States)

2015-11-01

Platinum Electrodes for Metal Assisted Etching of Porous Silicon by Matthew H Ervin and Brian Isaacson Sensors and Electron Devices Directorate...SUBTITLE Same-Side Platinum Electrodes for Metal Assisted Etching of Porous Silicon 5a. CONTRACT NUMBER 5b. GRANT NUMBER 5c. PROGRAM ELEMENT

LHCb-VELO module production with n-side read-out on n- and p-type silicon substrates

International Nuclear Information System (INIS)

Affolder, A.; Bowcock, T.J.V.; Carrol, J.L.; Casse, G.; Huse, T.; Patel, G.D.; Rinnert, K.; Smith, N.A.; Turner, P.R.

2007-01-01

The modules for the Vertex Locator detector of the LHCb experiment represent a technical challenge for their complexity. The design of the sensors uses a complex double metal routing of the connection to the read-out strips and a high density of metal lines has to be accommodated in the module. The detectors are n-side read-out to be able to survive the highest radiation damage of any micro-strip sensor used in LHC experiments. The present choice is n-strips on n-type substrates (n-in-n geometry). Double-sided lithography is required, which impact on the cost of the devices and on the module construction. Moreover, the compact size of the hybrid imposes sophisticated technical solutions for cooling the electronics and the detector. The module construction and the possible benefits offered by the choice of p-type substrate detectors compared to the present n-in-n devices are here discussed in details

Wedge silicon detectors for the inner trackering system of CMS

International Nuclear Information System (INIS)

Catacchini, E.; Civinini, C.; D'Alessandro, R.; Focardi, E.; Meschini, M.; Parrini, G.; Pieri, M.; Wheadon, R.

1997-01-01

One ''wedge'' double sided silicon detector prototype for the CMS forward inner tracker has been tested both in laboratory and on a high energy particle beam. The results obtained indicate the most reliable solutions for the strip geometry of the junction side. Three different designs of ''wedge'' double sided detectors with different solutions for the ohmic side strip geometry are presented. (orig.)

Double-sided Moral Hazard and Margin-based Royalty

OpenAIRE

NARIU, Tatsuhiko; UEDA, Kaoru; LEE, DongJoon

2009-01-01

This paper analyzes royalty modes in the franchise arrangements of convenience stores under double-sided moral hazard. In Japan, the majority of franchisors charge margin-based royalties based on net margins rather than sales-based royalties based on sales. We show that the franchisor can attain the first-best outcome by adopting margin-based royalties under double-sided moral hazard. We consider a case where a franchisee sells two kinds of goods; one is shipped from its franchisor and the ot...

Micro-fabricated silicon devices for advanced thermal management and integration of particle tracking detectors

CERN Document Server

Romagnoli, Giulia; Gambaro, Carla

Since their first studies targeting the cooling of high-power computing chips, micro-channel devices are proven to provide a very efficient cooling system. In the last years micro-channel cooling has been successfully applied to the cooling of particle detectors at CERN. Thanks to their high thermal efficiency, they can guarantee a good heat sink for the cooling of silicon trackers, fundamental for the reduction of the radiation damage caused by the beam interactions. The radiation damage on the silicon detector is increasing with temperature and furthermore the detectors are producing heat that should be dissipated in the supporting structure. Micro-channels guarantee a distributed and uniform thermal exchange, thanks to the high flexibility of the micro-fabrication process that allows a large variety of channel designs. The thin nature of the micro-channels etched inside silicon wafers, is fulfilling the physics requirement of minimization of the material crossed by the particle beam. Furthermore micro-chan...

Double stabilization of nanocrystalline silicon: a bonus from solvent

Energy Technology Data Exchange (ETDEWEB)

Kolyagin, Y. G.; Zakharov, V. N.; Yatsenko, A. V.; Paseshnichenko, K. A.; Savilov, S. V.; Aslanov, L. A., E-mail: aslanov.38@mail.ru [Lomonosov Moscow State University (Russian Federation)

2016-01-15

Double stabilization of the silicon nanocrystals was observed for the first time by {sup 29}Si and {sup 13}C MAS NMR spectroscopy. The role of solvent, 1,2-dimethoxyethane (glyme), in formation and stabilization of silicon nanocrystals as well as mechanism of modification of the surface of silicon nanocrystals by nitrogen-heterocyclic carbene (NHC) was studied in this research. It was shown that silicon nanocrystals were stabilized by the products of cleavage of the C–O bonds in ethers and similar compounds. The fact of stabilization of silicon nanoparticles with NHC ligands in glyme was experimentally detected. It was demonstrated that MAS NMR spectroscopy is rather informative for study of the surface of silicon nanoparticles but it needs very pure samples.

Double-sided microtron at Nihon University

International Nuclear Information System (INIS)

Tanaka, T.; Hayakawa, K.; Yatoh, H.; Yoshida, K.; Takeda, O.; Sato, K.; Torizuka, Y.

1990-01-01

Construction of a 35 MeV cw double-sided microtron (DSM) at Nihon University was started in 1984 and completed in the spring of 1989. This machine was constructed as a proto-type of an 1 GeV cw double sided microtron for a medical pion facility and test accelerator for FEL and other applications. The 4.55 MeV electron beam from 5 MeV injector linac is injected to the DSM. The energy gain is 6 MeV at each turn acceleration. After recirculated 5 times, the electron beam with 34.5 MeV is extracted at the final short straight section. The DAW structure is used for all the accelerating tubes including the injector linac. Total rf power of 200 kW is provided by four 50 kW klystrons of 2450 MHz. (author)

Lamb wave band gaps in a double-sided phononic plate

Science.gov (United States)

Wang, Peng; Chen, Tian-Ning; Yu, Kun-Peng; Wang, Xiao-Peng

2013-02-01

In this paper, we report on the theoretical investigation of the propagation characteristics of Lamb wave in a phononic crystal structure constituted by a square array of cylindrical stubs deposited on both sides of a thin homogeneous plate. The dispersion relations, the power transmission spectra, and the displacement fields of the eigenmodes are studied by using the finite-element method. We investigate the evolution of band gaps in the double-sided phononic plate with stub height on both sides arranged from an asymmetrical distribution to a symmetrical distribution gradually. Numerical results show that as the double stubs in a unit cell arranged more symmetrically on both sides, band width shifts, new band gaps appear, and the bands become flat due to localized resonant modes which couple with plate modes. Specially, more band gaps and flat bands can be found in the symmetrical system as a result of local resonances of the stubs which interact in a stronger way with the plate modes. Moreover, the symmetrical double-sided plate exhibits lower and smaller band gap than that of the asymmetrical plate. These propagation properties of elastic or acoustic waves in the double-sided plate can potentially be utilized to generate filters, slow the group velocity, low-frequency sound insulation, and design acoustic sensors.

The H1 silicon vertex detector

International Nuclear Information System (INIS)

Pitzl, D.; Behnke, O.; Biddulph, M.; Boesiger, K.; Eichler, R.; Erdmann, W.; Gabathuler, K.; Gassner, J.; Haynes, W.J..; Horisberger, R.; Kausch, M.; Lindstroem, M.; Niggli, H.; Noyes, G.; Pollet, P.; Steiner, S.; Streuli, S.; Szeker, K.; Truoel, P.

2000-01-01

The design, construction and performance of the H1 silicon vertex detector is described. It consists of two cylindrical layers of double-sided, double-metal silicon sensors read out by a custom designed analog pipeline chip. The analog signals are transmitted by optical fibres to a custom-designed ADC board and are reduced on PowerPC processors. Details of the design and construction are given and performance figures from the first data-taking periods are presented

Multistable wireless micro-actuator based on antagonistic pre-shaped double beams

International Nuclear Information System (INIS)

Liu, X; Lamarque, F; Doré, E; Pouille, P

2015-01-01

This paper presents a monolithic multistable micro-actuator based on antagonistic pre-shaped double beams. The designed micro-actuator is formed by two rows of bistable micro-actuators providing four stable positions. The bistable mechanism for each row is a pair of antagonistic pre-shaped beams. This bistable mechanism has an easier pre-load operation compared to the pre-compressed bistable beams method. Furthermore, it solves the asymmetrical force output problem of parallel pre-shaped bistable double beams. At the same time, the geometrical limit is lower than parallel pre-shaped bistable double beams, which ensures a smaller stroke of the micro-actuator with the same dimensions. The designed micro-actuator is fabricated using laser cutting machine on medium density fiberboard (MDF). The bistability and merits of antagonistic pre-shaped double beams are experimentally validated. Finally, a contactless actuation test is performed using 660 nm wavelength laser heating shape memory alloy (SMA) active elements. (paper)

Multistable wireless micro-actuator based on antagonistic pre-shaped double beams

Science.gov (United States)

Liu, X.; Lamarque, F.; Doré, E.; Pouille, P.

2015-07-01

This paper presents a monolithic multistable micro-actuator based on antagonistic pre-shaped double beams. The designed micro-actuator is formed by two rows of bistable micro-actuators providing four stable positions. The bistable mechanism for each row is a pair of antagonistic pre-shaped beams. This bistable mechanism has an easier pre-load operation compared to the pre-compressed bistable beams method. Furthermore, it solves the asymmetrical force output problem of parallel pre-shaped bistable double beams. At the same time, the geometrical limit is lower than parallel pre-shaped bistable double beams, which ensures a smaller stroke of the micro-actuator with the same dimensions. The designed micro-actuator is fabricated using laser cutting machine on medium density fiberboard (MDF). The bistability and merits of antagonistic pre-shaped double beams are experimentally validated. Finally, a contactless actuation test is performed using 660 nm wavelength laser heating shape memory alloy (SMA) active elements.

Fabrication and Characterization of Silicon Micro-Funnels and Tapered Micro-Channels for Stochastic Sensing Applications

Directory of Open Access Journals (Sweden)

Frances S. Ligler

2008-06-01

Full Text Available We present a simplified, highly reproducible process to fabricate arrays of tapered silicon micro-funnels and micro-channels using a single lithographic step with a silicon oxide (SiO2 hard mask on at a wafer scale. Two approaches were used for the fabrication. The first one involves a single wet anisotropic etch step in concentrated potassium hydroxide (KOH and the second one is a combined approach comprising Deep Reactive Ion Etch (DRIE followed by wet anisotropic etching. The etching is performed through a 500 mm thick silicon wafer, and the resulting structures are characterized by sharp tapered ends with a sub-micron cross-sectional area at the tip. We discuss the influence of various parameters involved in the fabrication such as the size and thickness variability of the substrate, dry and wet anisotropic etching conditions, the etchant composition, temperature, diffusion and micro-masking effects, the quality of the hard mask in the uniformity and reproducibility of the structures, and the importance of a complete removal of debris and precipitates. The presence of apertures at the tip of the structures is corroborated through current voltage measurements and by the translocation of DNA through the apertures. The relevance of the results obtained in this report is discussed in terms of the potential use of these structures for stochastic sensing.

Design and tests of the silicon sensors for the ZEUS micro vertex detector

International Nuclear Information System (INIS)

Dannheim, D.; Koetz, U.; Coldewey, C.; Fretwurst, E.; Garfagnini, A.; Klanner, R.; Martens, J.; Koffeman, E.; Tiecke, H.; Carlin, R.

2003-01-01

To fully exploit the HERA-II upgrade, the ZEUS experiment has installed a Micro Vertex Detector (MVD) using n-type, single-sided, silicon μ-strip sensors with capacitive charge division. The sensors have a readout pitch of 120 μm, with five intermediate strips (20 μm strip pitch). The designs of the silicon sensors and of the test structures used to verify the technological parameters, are presented. Results on the electrical measurements are discussed. A total of 1123 sensors with three different geometries have been produced by Hamamatsu Photonics K.K. Irradiation tests with reactor neutrons and 60 Co photons have been performed for a small sample of sensors. The results on neutron irradiation (with a fluence of 1x10 13 1 MeV equivalent neutrons/cm 2 ) are well described by empirical formulae for bulk damage. The 60 Co photons (with doses up to 2.9 kGy) show the presence of generation currents in the SiO 2 -Si interface, a large shift of the flatband voltage and a decrease of the hole mobility

Controlled delivery of acyclovir from porous silicon micro- and nanoparticles

Energy Technology Data Exchange (ETDEWEB)

Maniya, Nalin H.; Patel, Sanjaykumar R.; Murthy, Z.V.P., E-mail: zvpm2000@yahoo.com

2015-03-01

Graphical abstract: - Highlights: • Porous silicon (PSi) was fabricated by electrochemical etching process. • Micro- and nanoparticles were prepared by ultrasonic fracture of PSi films. • Acyclovir was loaded into native, oxidized, and hydrosilylated PSi particles. • Micro- and nanoparticles displays controlled release behaviour for several days. • Drug release behaviour and release kinetics from PSi particles were studied. - Abstract: In this work, micro- and nanoparticles of porous silicon (PSi) are demonstrated to act as effective carrier for the controlled delivery of acyclovir (ACV). PSi films prepared by electrochemical etching were fractured by ultrasonication to prepare micro- and nanoparticles. PSi native particles were thermally oxidized (TOPSi) and thermally hydrosilylated using undecylenic acid (UnPSi). PSi particles with three different surface chemistries were then loaded with ACV by physical adsorption and covalent attachment. Such particles were characterized by scanning electron microscopy, dynamic light scattering, and Fourier transform infrared spectroscopy. In vitro ACV release experiments in phosphate buffered saline showed sustained release behaviour from both micro- and nanoparticles and order of release was found to be native PSi > TOPSi > UnPSi. Drug release kinetics study using Korsmeyer-Peppas model suggested a combination of both drug diffusion and Si scaffold erosion based drug release mechanisms.

Controlled delivery of acyclovir from porous silicon micro- and nanoparticles

International Nuclear Information System (INIS)

Maniya, Nalin H.; Patel, Sanjaykumar R.; Murthy, Z.V.P.

2015-01-01

Graphical abstract: - Highlights: • Porous silicon (PSi) was fabricated by electrochemical etching process. • Micro- and nanoparticles were prepared by ultrasonic fracture of PSi films. • Acyclovir was loaded into native, oxidized, and hydrosilylated PSi particles. • Micro- and nanoparticles displays controlled release behaviour for several days. • Drug release behaviour and release kinetics from PSi particles were studied. - Abstract: In this work, micro- and nanoparticles of porous silicon (PSi) are demonstrated to act as effective carrier for the controlled delivery of acyclovir (ACV). PSi films prepared by electrochemical etching were fractured by ultrasonication to prepare micro- and nanoparticles. PSi native particles were thermally oxidized (TOPSi) and thermally hydrosilylated using undecylenic acid (UnPSi). PSi particles with three different surface chemistries were then loaded with ACV by physical adsorption and covalent attachment. Such particles were characterized by scanning electron microscopy, dynamic light scattering, and Fourier transform infrared spectroscopy. In vitro ACV release experiments in phosphate buffered saline showed sustained release behaviour from both micro- and nanoparticles and order of release was found to be native PSi > TOPSi > UnPSi. Drug release kinetics study using Korsmeyer-Peppas model suggested a combination of both drug diffusion and Si scaffold erosion based drug release mechanisms

High-resolution Compton cameras based on Si/CdTe double-sided strip detectors

International Nuclear Information System (INIS)

Odaka, Hirokazu; Ichinohe, Yuto; Takeda, Shin'ichiro; Fukuyama, Taro; Hagino, Koichi; Saito, Shinya; Sato, Tamotsu; Sato, Goro; Watanabe, Shin; Kokubun, Motohide; Takahashi, Tadayuki; Yamaguchi, Mitsutaka

2012-01-01

We have developed a new Compton camera based on silicon (Si) and cadmium telluride (CdTe) semiconductor double-sided strip detectors (DSDs). The camera consists of a 500-μm-thick Si-DSD and four layers of 750-μm-thick CdTe-DSDs all of which have common electrode configuration segmented into 128 strips on each side with pitches of 250μm. In order to realize high angular resolution and to reduce size of the detector system, a stack of DSDs with short stack pitches of 4 mm is utilized to make the camera. Taking advantage of the excellent energy and position resolutions of the semiconductor devices, the camera achieves high angular resolutions of 4.5° at 356 keV and 3.5° at 662 keV. To obtain such high resolutions together with an acceptable detection efficiency, we demonstrate data reduction methods including energy calibration using Compton scattering continuum and depth sensing in the CdTe-DSD. We also discuss imaging capability of the camera and show simultaneous multi-energy imaging.

[Morphological features of utilization intraperitoneal double-sided prostheses in inguinoplasty in dogs].

Science.gov (United States)

de Andrade, Luiz Carlos; Ceneviva, Reginaldo; Coutinho-Netto, Joaquim; Silva Júnior, Orlando de Castro e; dos Santos, José Sebastião; Sukeda, Daniel Hirochi

2009-10-01

To asses the morphological features of the behavior of a double-sided prostheses using inguinoplasty laparotomy in dogs with latex side turned to the visceras. Twenty dogs were divided into two groups of 10 and submitted into infraumbilical laparotomy with double-sided prostheses fixed in an inguinal area and in the other side area a control prostheses of polipropilene (PPL). Macroscopics itens were studied on the 14th and 28th day post-operatory, and they were related to obstruction and intestinal fistulas, encystation, fusion and especially sticker. The microscopic analysis covered the inflammatory process in its acute, chronic and restored phase Infectious process, obstruction or intestinal fistula did not happen. The prostheses presented good accommodation and incorporation. The stickers happened with more prevalent and intensity with the PPL (p0,05). The double-sided prostheses in its parietal side adds the advantages of the incorporation's potential to the noticed material with PPL to the biocompatibility from the latex in its visceral side. The little distance between the PPL disc and the edge of the double-sided prostheses (2 cm) allied to its sticking with just five staples is not enough to avoid gaps, through which the epíploon migrated towards to the inflammatory process provoked by PPL in the parietal side.

Assembly and validation of the SSD silicon microstrip detector of ALICE

NARCIS (Netherlands)

de Haas, A.P.; Kuijer, P.G.; Nooren, G.J.L.; Oskamp, C.J.; Sokolov, A.N.; van den Brink, A.

2006-01-01

The Silicon Strip Detector (SSD) forms the two outermost layers of the Inner Tracking System (ITS) of ALICE. The SSD detector consists of 1698 double-sided silicon microstrip modules. The electrical connection between silicon sensor and front-end electronics is made via TAB-bonded

Fabrication of 3D Silicon Sensors

Energy Technology Data Exchange (ETDEWEB)

Kok, A.; Hansen, T.E.; Hansen, T.A.; Lietaer, N.; Summanwar, A.; /SINTEF, Oslo; Kenney, C.; Hasi, J.; /SLAC; Da Via, C.; /Manchester U.; Parker, S.I.; /Hawaii U.

2012-06-06

Silicon sensors with a three-dimensional (3-D) architecture, in which the n and p electrodes penetrate through the entire substrate, have many advantages over planar silicon sensors including radiation hardness, fast time response, active edge and dual readout capabilities. The fabrication of 3D sensors is however rather complex. In recent years, there have been worldwide activities on 3D fabrication. SINTEF in collaboration with Stanford Nanofabrication Facility have successfully fabricated the original (single sided double column type) 3D detectors in two prototype runs and the third run is now on-going. This paper reports the status of this fabrication work and the resulted yield. The work of other groups such as the development of double sided 3D detectors is also briefly reported.

Impact of the layout on the electrical characteristics of double-sided silicon 3D sensors fabricated at FBK

Energy Technology Data Exchange (ETDEWEB)

Povoli, M., E-mail: povoli@disi.unitn.it [Dipartimento di Ingegneria e Scienza dell' Informazione, Università di Trento, Via Sommarive, 14, I-38123 Povo di Trento (Italy); INFN, Sezione di Padova (Gruppo Collegato di Trento) (Italy); Bagolini, A.; Boscardin, M. [Fondazione Bruno Kessler, Centro per i Materiali e i Microsistemi (FBK-CMM), Via Sommarive, 18, I-38123 Povo di Trento, TN (Italy); Dalla Betta, G.-F. [Dipartimento di Ingegneria e Scienza dell' Informazione, Università di Trento, Via Sommarive, 14, I-38123 Povo di Trento (Italy); INFN, Sezione di Padova (Gruppo Collegato di Trento) (Italy); Giacomini, G.; Mattedi, F.; Vianello, E.; Zorzi, N. [Fondazione Bruno Kessler, Centro per i Materiali e i Microsistemi (FBK-CMM), Via Sommarive, 18, I-38123 Povo di Trento, TN (Italy)

2013-01-21

We report on experimental results and TCAD simulations addressing the impact of layout on the electrical characteristics of double-sided 3D diodes fabricated at Fondazione Bruno Kessler (FBK), Trento, Italy. Simulations are found to accurately reproduce the device characteristics, thus explaining the basic mechanisms governing the breakdown behavior and capacitance of different devices and providing useful hints for layout optimization.

Impact of the layout on the electrical characteristics of double-sided silicon 3D sensors fabricated at FBK

International Nuclear Information System (INIS)

Povoli, M.; Bagolini, A.; Boscardin, M.; Dalla Betta, G.-F.; Giacomini, G.; Mattedi, F.; Vianello, E.; Zorzi, N.

2013-01-01

We report on experimental results and TCAD simulations addressing the impact of layout on the electrical characteristics of double-sided 3D diodes fabricated at Fondazione Bruno Kessler (FBK), Trento, Italy. Simulations are found to accurately reproduce the device characteristics, thus explaining the basic mechanisms governing the breakdown behavior and capacitance of different devices and providing useful hints for layout optimization.

A study on the beta voltaic micro-nuclear battery based on the planar technology silicon detector

International Nuclear Information System (INIS)

Zhang Kai; He Gaokui; Huang Xiaojian; Liu Yang; Meng Xin; Hao Xiaoyong

2011-01-01

It describes briefly the beta voltaic micro-nuclear battery based on the planar technology silicon detector and radioisotope. Different sensitive area of silicon detectors are used to cooperate with 63 Ni source to buildup of beta voltaic micro-nuclear batteries. The experimental data show that the larger sensitive area the silicon detector has, the higher open circuit voltage it produces, and the open circuit voltage of single cell has reached an excellent result from 0.15 V to 0.30 V. It is possible to get high output power by series or parallel connecting the beta voltaic micro-nuclear batteries. (authors)

From Modeling to Fabrication of Double Side Microstructured Silicon Windows for Infrared Gas Sensing in Harsh Environments

DEFF Research Database (Denmark)

Bergmann, René; Ivinskaya, Aliaksandra; Kafka, Jan Robert

2014-01-01

(∅1") were manufactured. The windows show high temperature resistant sub-wavelength anti-reflective surface microstructures on both side faces. Thus, a peak transmittance of 100% for a defined main wavelength (5 μm) and more than 90 % average transmittance for the wavelength range of 5-7 μm......Commercial infrared windows used for gas sensing in the mid-IR range usually possess an anti-reflective coating. Those coatings can normally not withstand harsh environments, particularly not high temperatures. With a simple “3-step” fabrication process, high temperature resistant silicon windows...... was achieved. The modeling of the anti-reflective microstructures, their fabrication process and final transmittance analysis of the windows is discussed....

Are tomorrow's micro-supercapacitors hidden in a forest of silicon nanotrees?

Science.gov (United States)

Thissandier, Fleur; Gentile, Pascal; Brousse, Thierry; Bidan, Gérard; Sadki, Saïd

2014-12-01

Silicon nanotrees (SiNTrs) have been grown by Chemical Vapor Deposition (CVD) via gold catalysis and a three steps process: trunks and branches growth are separated by a new gold catalyst deposition. The influence of growth conditions and the second gold catalyst deposition method on SiNTrs morphology are investigated. SiNTrs based electrodes show a capacitive behavior and better capacitance than the corresponding silicon nanowires (SiNWs) electrode. Electrode capacitance is increased up to 900 μF cm-2, i.e. 150 fold higher than for bulk silicon. Micro-supercapacitors with SiNTrs electrodes have a remarkable stability (only 1.2% loses of their initial capacitance after more than one million cycles). The use of an ionic liquid based electrolyte leads to a high maximum power density (around 225 mW cm-2) which is competitive with Onion Like Carbon based micro-supercapacitors.

Laser-assisted patterning of double-sided adhesive tapes for optofluidic chip integration

Science.gov (United States)

Zamora, Vanessa; Janeczka, Christian; Arndt-Staufenbiel, Norbert; Havlik, George; Queisser, Marco; Schröder, Henning

2018-02-01

Portable high-sensitivity biosensors exhibit a growing demand in healthcare, food industry and environmental monitoring sectors. Optical biosensors based on photonic integration platforms are attractive candidates due to their high sensitivity, compactness and multiplexing capabilities. However, they need a low-cost and reliable integration with the microfluidic system. Laser-micropatterned double-sided biocompatible adhesive tapes are promising bonding layers for hybrid integration of an optofluidic biochip. As a part of the EU-PHOCNOSIS project, double-sided adhesive tapes have been proposed to integrate the polymer microfluidic system with the optical integrated waveguide sensor chip. Here the adhesive tape should be patterned in a micrometer scale in order to create an interaction between the sample that flows through the polymer microchannel and the photonic sensing microstructure. Three laser-assisted structuring methods are investigated to transfer microchannel patterns to the adhesive tape. The test structure design consists of a single channel with 400 μm wide, 30 mm length and two circular receivers with 3 mm radius. The best structuring results are found by using the picosecond UV laser where smooth and straight channel cross-sections are obtained. Such patterned tapes are used to bond blank polymer substrates to blank silicon substrates. As a proof of concept, the hybrid integration is tested using colored DI-water. Structuring tests related to the reduction of channel widths are also considered in this work. The use of this technique enables a simple and rapid manufacturing of narrow channels (50-60 μm in width) in adhesive tapes, achieving a cheap and stable integration of the optofluidic biochip.

Nickel silicide thin films as masking and structural layers for silicon bulk micro-machining by potassium hydroxide wet etching

International Nuclear Information System (INIS)

Bhaskaran, M; Sriram, S; Sim, L W

2008-01-01

This paper studies the feasibility of using titanium and nickel silicide thin films as mask materials for silicon bulk micro-machining. Thin films of nickel silicide were found to be more resistant to wet etching in potassium hydroxide. The use of nickel silicide as a structural material, by fabricating micro-beams of varying dimensions, is demonstrated. The micro-structures were realized using these thin films with wet etching using potassium hydroxide solution on (1 0 0) and (1 1 0) silicon substrates. These results show that nickel silicide is a suitable alternative to silicon nitride for silicon bulk micro-machining

Irradiation of electron with high energy induced micro-crystallization of amorphous silicon

International Nuclear Information System (INIS)

Zhong Yule; Huang Junkai; Liu Weiping; Li Jingna

2001-01-01

Amorphous silicon is amorphous alloy of Si-H. It is random network of silicon with some hydrogen. And its structure has many unstable bonds as weak bonds of Si-Si and distortion bonds of all kinds. The bonds was broken or was out of shape by light and electrical ageing. It induced increase of defective state that causes character of material going to bad. This drawback will be overcome after micro-crystallization of amorphous silicon. It was discovered that a-Si:H was micro-crystallized by irradiated of electrons with energy of 0.3-0.5 MeV, density of electronic beam of 1.3 x 10 19 cm -1 s -1 and irradiated time of 10-600 s. Size of grain is 10-20 nm. Thick of microcrystalline lager is 25-250 nm

Drainage characteristics of the 3F MicroStent using a novel film occlusion anchoring mechanism.

Science.gov (United States)

Lange, Dirk; Hoag, Nathan A; Poh, Beow Kiong; Chew, Ben H

2011-06-01

To determine whether the overall ureteral flow through an obstructed ureter using the 3F MicroStent™ that uses a novel film occlusion anchoring mechanism is comparable to the flow using a conventional 3F and 4.7F Double-J stent. An in vitro silicone ureter model and an ex vivo porcine urinary model (kidney and ureter) were used to measure the overall flow through obstructed and unobstructed ureters with either a 3F Double-J stent (Cook), 3F MicroStent (PercSys), or 4.7F Double-J stent (Cook). Mean flow rates were compared with descriptive statistics. Mean flow rates through the obstructed silicone ureter (12-mm stone) for the 3F MicroStent, 3F Double-J stent, and 4.7F Double-J stent were 326.7±13.3  mL/min, 283.3±19.2  mL/min, and 356.7±14.1  mL/min, respectively. In the obstructed ex vivo porcine ureter model, the flow as a percentage of free flow was 60%, 53%, and 50 %, respectively. In both ureteral models, flow rates of the 3F MicroStent and 4.7F Double-J stents were not statistically different. The 3F MicroStent demonstrated drainage equivalent to a 4.7F Double-J stent, in both in vitro silicone and ex vivo porcine obstructed urinary models. We have demonstrated the crucial first step that this 3F stent, using a novel film occlusion anchoring mechanism, has equivalent, if not slightly improved, drainage rates when compared with its larger counterpart.

Experience with the silicon strip detector of ALICE

NARCIS (Netherlands)

Nooren, G.J.L.

2009-01-01

The Silicon Strip Detector (SSD) forms the two outermost layers of the ALICE Inner Track- ing System (ITS), connecting the TPC with the inner layers of the ITS. The SSD consists of 1698 double-sided silicon microstrip modules, 95 μm pitch, distributed in two cylindrical bar- rels, whose radii are

An improved detector response simulation for the CBM silicon tracking system

Energy Technology Data Exchange (ETDEWEB)

Malygina, Hanna [Goethe University, Frankfurt (Germany); Friese, Volker [GSI, Darmstadt (Germany); Collaboration: CBM-Collaboration

2015-07-01

The Compressed Baryonic Matter experiment(CBM) at FAIR is designed to explore the QCD phase diagram in the region of high net-baryon densities. The central detector component the Silicon Tracking System (STS) is build from double-sided micro-strip sensors. To achieve realistic simulations the response of the silicon strip sensors should be precisely included in the digitizer which simulates a complete chain of physical processes caused by charged particles traversing the detector, from charge creation in silicon to a digital output signal. The new version of the STS digitizer comprises in addition non-uniform energy loss distributions (according to the Urban theory), thermal diffusion and charge redistribution over the read-out channels due to interstrip capacitances. The improved response simulation was tested with parameters reproducing the anticipated running conditions of the CBM experiment. Two different method for cluster finding were used. The results for hit position residuals, cluster size distribution, as well as for some other parameters of reconstruction quality are presented. The achieved advance is assessed by a comparison with the previous, simpler version of the STS detector response simulation.

Cobalt micro-magnet integration on silicon MOS quantum dots

Science.gov (United States)

Camirand Lemyre, Julien; Rochette, Sophie; Anderson, John; Manginell, Ronald P.; Pluym, Tammy; Ward, Dan; Carroll, Malcom S.; Pioro-Ladrière, Michel

Integration of cobalt micro-magnets on silicon metal-oxide-semiconductor (MOS) quantum dot devices has been investigated. The micro-magnets are fabricated in a lift-off process with e-beam lithography and deposited directly on top of an etched poly-silicon gate stack. Among the five resist stacks tested, one is found to be compatible with our MOS specific materials (Si and SiO2) . Moreover, devices with and without additional Al2O3 insulating layer show no additional gate leakage after processing. Preliminary transport data indicates electrostatic stability of our devices with integrated magnets. This work was performed, in part, at the Center for Integrated Nanotechnologies, an Office of Science User Facility operated for the U.S. Department of Energy (DOE) Office of Science. Sandia National Laboratories is a multi-program laboratory operated by Sandia Corporation, a Lockheed-Martin Company, for the U. S. Department of Energy under Contract No. DE-AC04-94AL85000.

The Micro-Vertex-Detector for the P-bar ANDA experiment

International Nuclear Information System (INIS)

Zotti, Laura

2013-01-01

P-bar ANDA is a fixed target experiment that will be carried out at the future FAIR facility. P-bar ANDA will provide an excellent tool to address fundamental question in the field of hadronic physics, with a physic program that extends from the investigation of QCD (providing insight in the mechanisms of mass generation and confinement) to the test of fundamental symmetries. The Micro-Vertex-Detector located in the innermost part of the central tracking system will be composed by hybrid pixel and double-sided micro-strip silicon detectors. The Micro-Vertex-Detector will play an important role for the P-bar ANDA physics goals. The possibility to reconstruct the secondary vertices and the applicability of a precise D meson tagging is essential for the spectroscopy in the open charm sector and the charmonium mass region. To this aim the Micro-Vertex-Detector features a spatial resolution better than 100μm, a time resolution better than 20ns, a limited material budget, and a high data rate capability in a triggerless environment. An overview of the Micro-Vertex-Detector related to the physics goals will be presented.

Unified double- and single-sided homogeneous Green's function representations

Science.gov (United States)

Wapenaar, Kees; van der Neut, Joost; Slob, Evert

2016-06-01

In wave theory, the homogeneous Green's function consists of the impulse response to a point source, minus its time-reversal. It can be represented by a closed boundary integral. In many practical situations, the closed boundary integral needs to be approximated by an open boundary integral because the medium of interest is often accessible from one side only. The inherent approximations are acceptable as long as the effects of multiple scattering are negligible. However, in case of strongly inhomogeneous media, the effects of multiple scattering can be severe. We derive double- and single-sided homogeneous Green's function representations. The single-sided representation applies to situations where the medium can be accessed from one side only. It correctly handles multiple scattering. It employs a focusing function instead of the backward propagating Green's function in the classical (double-sided) representation. When reflection measurements are available at the accessible boundary of the medium, the focusing function can be retrieved from these measurements. Throughout the paper, we use a unified notation which applies to acoustic, quantum-mechanical, electromagnetic and elastodynamic waves. We foresee many interesting applications of the unified single-sided homogeneous Green's function representation in holographic imaging and inverse scattering, time-reversed wave field propagation and interferometric Green's function retrieval.

Method for double-sided processing of thin film transistors

Science.gov (United States)

Yuan, Hao-Chih; Wang, Guogong; Eriksson, Mark A.; Evans, Paul G.; Lagally, Max G.; Ma, Zhenqiang

2008-04-08

This invention provides methods for fabricating thin film electronic devices with both front- and backside processing capabilities. Using these methods, high temperature processing steps may be carried out during both frontside and backside processing. The methods are well-suited for fabricating back-gate and double-gate field effect transistors, double-sided bipolar transistors and 3D integrated circuits.

Lamb wave band gaps in one-dimensional radial phononic crystal plates with periodic double-sided corrugations

Energy Technology Data Exchange (ETDEWEB)

Li, Yinggang [School of Mechanical Engineering and State Key Laboratory for Strength and Vibration of Mechanical Structures, Xi’an Jiaotong University, Xi’an, 710049 (China); School of Transportation, Wuhan University of Technology, Wuhan 430070 (China); Chen, Tianning [School of Mechanical Engineering and State Key Laboratory for Strength and Vibration of Mechanical Structures, Xi’an Jiaotong University, Xi’an, 710049 (China); Wang, Xiaopeng, E-mail: xpwang@mail.xjtu.edu.cn [School of Mechanical Engineering and State Key Laboratory for Strength and Vibration of Mechanical Structures, Xi’an Jiaotong University, Xi’an, 710049 (China); Li, Suobin [School of Mechanical Engineering and State Key Laboratory for Strength and Vibration of Mechanical Structures, Xi’an Jiaotong University, Xi’an, 710049 (China)

2015-11-01

In this paper, we present the theoretical investigation of Lamb wave propagation in one-dimensional radial phononic crystal (RPC) plates with periodic double-sided corrugations. The dispersion relations, the power transmission spectra, and the displacement fields of the eigenmodes are studied by using the finite element method based on two-dimensional axial symmetry models in cylindrical coordinates. Numerical results show that the proposed RPC plates with periodic double-sided corrugations can yield several band gaps with a variable bandwidth for Lamb waves. The formation mechanism of band gaps in the double-sided RPC plates is attributed to the coupling between the Lamb modes and the in-phase and out-phases resonant eigenmodes of the double-sided corrugations. We investigate the evolution of band gaps in the double-sided RPC plates with the corrugation heights on both sides arranged from an asymmetrical distribution to a symmetrical distribution gradually. Significantly, with the introduction of symmetric double-sided corrugations, the antisymmetric Lamb mode is suppressed by the in-phase resonant eigenmodes of the double-sided corrugations, resulting in the disappearance of the lowest band gap. Furthermore, the effects of the geometrical parameters on the band gaps are further explored numerically.

A data acquisition system for silicon microstrip detectors

International Nuclear Information System (INIS)

Adriani, O.; Civinini, C.; D'Alessandro, R.; Meschini, M.; Pieri, M.; Castellini, G.

1998-01-01

Following initial work on the readout of the L3 silicon microvertex detector, the authors have developed a complete data acquisition system for silicon microstrip detectors for use both in their home institute and at the various test beam facilities at the CERN laboratory. The system uses extensive decoupling schemes allowing a fully floating connection to the detector. This feature has many advantages especially in the readout of the latest double-sided silicon microstrip detectors

Signals from fluorescent materials on the surface of silicon micro-strip sensors

CERN Document Server

Sperlich, Dennis; The ATLAS collaboration

2017-01-01

For the High-Luminosity Upgrade of the Large Hadron Collider at CERN, the ATLAS Inner Detector will be replaced with a new, all-silicon tracker. In order to minimise the amount of material in the detector, circuit boards with readout electronics will be glued on to the active area of the sensor. Several adhesives investigated to be used for the construction of detector modules were found to become fluorescent when exposed to UV light. These adhesives could become a light source in the high-radiation environment of the ATLAS detector. The effect of fluorescent material covering the sensor surface in a high- radiation environment has been studied for a silicon micro-strip sensor using a micro-focused X-ray beam. By pointing the beam both inside the sensor and parallel to the sensor surface, the sensor responses from direct hits and fluorescence can be compared with high precision. This contribution presents a setup to study the susceptibility of silicon strip sensors to light contamination from fluorescent mate...

Color sensitive silicon photomultiplers with micro-cell level encoding for DOI PET detectors

Science.gov (United States)

Shimazoe, Kenji; Koyama, Akihiro; Takahashi, Hiroyuki; Ganka, Thomas; Iskra, Peter; Marquez Seco, Alicia; Schneider, Florian; Wiest, Florian

2017-11-01

There have been many studies on Depth Of Interaction (DOI) identification for high resolution Positron Emission Tomography (PET) systems, including those on phoswich detectors, double-sided readout, light sharing methods, and wavelength discrimination. The wavelength discrimination method utilizes the difference in wavelength of stacked scintillators and requires a color sensitive photodetector. Here, a new silicon photomultiplier (SiPM) coupled to a color filter (colorSiPM) was designed and fabricated for DOI detection. The fabricated colorSiPM has two anode readouts that are sensitive to blue and green color. The colorSiPM's response and DOI identification capability for stacked GAGG and LYSO crystals are characterized. The fabricated colorSiPM is sensitive enough to detect a peak of 662 keV from a 137 Cs source.

The silicon tracking system of the CBM experiment

Energy Technology Data Exchange (ETDEWEB)

Balog, Tomas [GSI Helmholtzzentrum fuer Schwerionenforschung GmbH, Darmstadt (Germany); Collaboration: CBM-Collaboration

2014-07-01

The Compressed Baryonic Matter (CBM) experiment at FAIR will explore the phase diagram of strongly interacting matter at the highest net-baryon densities in nucleus-nucleus collisions with interaction rates up to 10 MHz. As the core tracking detector of CBM the Silicon Tracking System (STS) will be installed in the gap of the 1 T super conducting dipole magnet for reconstruction of charged particle trajectories and its momenta. The requirement on momentum resolution, Δp/p=1%, can only be achieved with an ultra-low material budget, imposing particular restrictions on the location of 2.5 million channel front-end electronics dissipating 40 KW in the fiducial volume of about 2 m{sup 3}. The concept of the STS is based on a modular structure containing 300 μm thick double-sided silicon microstrip sensors read out through ultra-thin multi-line micro-cables with fast self-triggering electronics. As central building blocks the modules consisting of each a sensor, micro-cable and front-end electronics will be mounted with lightweight carbon fiber support structures onto 8 detector stations. At the station periphery infrastructure such as power and cooling lines will be placed. The status of the STS development is summarized in the presentation, including an overview on sensors, read-out electronics, prototypes, and system integration.

Quality factor improvement of silicon nitride micro string resonators

DEFF Research Database (Denmark)

Schmid, Silvan; Malm, Bjarke; Boisen, Anja

2011-01-01

Resonant micro and nano strings are of interest for sensor applications due to their extraordinary high quality factors, low mass and tunable resonant frequency. It has been found that the quality factor of strings is usually limited by clamping loss. In this work, clamping loss has been addressed...... by varying the clamping design and string geometry. We present silicon nitride micro strings with quality factors (Q) of up to 4 million in high vacuum achieved by minimizing clamping loss. For applications such as for chemical sensing, strings need to vibrate at atmospheric pressure. Maximal quality factor...

A double-sided linear primary permanent magnet vernier machine.

Science.gov (United States)

Du, Yi; Zou, Chunhua; Liu, Xianxing

2015-01-01

The purpose of this paper is to present a new double-sided linear primary permanent magnet (PM) vernier (DSLPPMV) machine, which can offer high thrust force, low detent force, and improved power factor. Both PMs and windings of the proposed machine are on the short translator, while the long stator is designed as a double-sided simple iron core with salient teeth so that it is very robust to transmit high thrust force. The key of this new machine is the introduction of double stator and the elimination of translator yoke, so that the inductance and the volume of the machine can be reduced. Hence, the proposed machine offers improved power factor and thrust force density. The electromagnetic performances of the proposed machine are analyzed including flux, no-load EMF, thrust force density, and inductance. Based on using the finite element analysis, the characteristics and performances of the proposed machine are assessed.

Porous silicon used as an oxide diffusion mask to produce a periodic micro doped n{sup ++}/n regions

Energy Technology Data Exchange (ETDEWEB)

Dimassi, Wissem; Jafel, Hayet; Lajnef, Mohamed; Ali Kanzari, M.; Bouaicha, Mongi; Bessais, Brahim; Ezzaouia, Hatem [Laboratoire de Photovoltaique, Centre de Recherche et des Technologies de l' Energie, PB: 95, Hammam Lif 2050 (Tunisia)

2011-06-15

The realization of screen-printed contacts on silicon solar cells requires highly doped regions under the fingers and lowly doped and thin ones between them. In this work, we present a low-cost approach to fabricate selective emitter (n{sup ++}/n doped silicon regions), using oxidized porous silicon (ox-PS) as a mask. Micro-periodic fingers were opened on the porous silicon layer using a micro groove machining process. Optimized phosphorous diffusion through the micro grooved ox-PS let us obtain n{sup ++} doped regions in opened zones and n doped large regions underneath the ox-PS layer. The dark I-V characteristics of the obtained device and Fourier transform infrared (FTIR) spectroscopy investigations of the PS layer show the possibility to use PS as a dielectric layer. The Light Beam Induced Current (LBIC) mapping of the realized device, confirm the presence of a micro periodic n{sup ++}/n type structure. (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Single-electron regime and Pauli spin blockade in a silicon metal-oxide-semiconductor double quantum dot

Science.gov (United States)

Rochette, Sophie; Ten Eyck, Gregory A.; Pluym, Tammy; Lilly, Michael P.; Carroll, Malcolm S.; Pioro-Ladrière, Michel

2015-03-01

Silicon quantum dots are promising candidates for quantum information processing as spin qubits with long coherence time. We present electrical transport measurements on a silicon metal-oxide-semiconductor (MOS) double quantum dot (DQD). First, Coulomb diamonds measurements demonstrate the one-electron regime at a relatively high temperature of 1.5 K. Then, the 8 mK stability diagram shows Pauli spin blockade with a large singlet-triplet separation of approximatively 0.40 meV, pointing towards a strong lifting of the valley degeneracy. Finally, numerical simulations indicate that by integrating a micro-magnet to those devices, we could achieve fast spin rotations of the order of 30 ns. Those results are part of the recent body of work demonstrating the potential of Si MOS DQD as reliable and long-lived spin qubits that could be ultimately integrated into modern electronic facilities. Sandia National Laboratories is a multi-program laboratory managed and operated by Sandia Corporation, a wholly owned subsidiary of Lockheed Martin Corporation, for the U.S. DOE's National Nuclear Security Administration under Contract DE-AC04-94AL85000.

The development of a silicon multiplicity detector system

Energy Technology Data Exchange (ETDEWEB)

Beuttenmuller, R.H.; Kraner, H.W.; Lissauer, D.; Makowiecki, D.; Polychronakos, V.; Radeka, V.; Sondericker, J.; Stephani, D. [Brookhaven National Laboratory, Upton, NY (United States); Barrette, J.; Hall, J.; Mark, S.K.; Pruneau, C.A. [McGill Univ., Montreal, Quebec (Canada); Wolfe, D. [Univ. of New Mexico, Albuquerque (United States); Borenstein, S.R. [York College-CUNY, Jamaica, NY (United States)

1991-12-31

The physics program and the design criteria for a Silicon Pad Detector at RHIC are reviewed. An end cap double sided readout detector configuration for RHIC is presented. Its performance as an on-line and off-line centrality tagging device is studied by means of simulations with Fritiof as the event generator. The results of an in-beam test of a prototype double-sided Si-detector are presented. Good signal-to-noise ratio are obtained with front junction and the resistive back side readout. Good separation between one and two minimum-ionizing particle signals is achieved.

MEMS silicon-based micro-evaporator with diamond-shaped fins

NARCIS (Netherlands)

Mihailovic, M.; Rops, C.; Creemer, J.F.; Sarro, P.M.

2010-01-01

A new design of micro-evaporators, with 45 channels (100 μm deep) and diamond-shaped fins (40μm wide, 160μm long, 20μm separation), is fabricated by anodic bonding of silicon and glass wafers, in a five masks process. This new design improves stability of the working conditions, and has a localized

MEMS silicon-based micro-evaporator with diamond-shaped fins

NARCIS (Netherlands)

Mihailovic, M.; Rops, C.; Creemer, J.F.; Sarro, P.M.

2010-01-01

A new design of micro-evaporators, with 45 channels (View the MathML source100?m deep) and diamond-shaped fins (View the MathML source40?m wide, View the MathML source160?m long, View the MathML source20?m separation), is fabricated by anodic bonding of silicon and glass wafers, in a five masks

Design and development of PCD micro straight edge end mills for micro/nano machining of hard and brittle materials

International Nuclear Information System (INIS)

Cheng, Xiang; Wang, Zhigang; Yamazaki, Kazuo; Nakamoto, Kazuo

2010-01-01

One of the biggest challenges for mechanical micro/nano milling is the design and fabrication of high precision and high efficiency micro milling tools. Commercially available micro milling tools are either too expensive (around several hundred US dollars) or simply made from downsizing of macro milling tools, which is sometimes not appropriate for the specific micro/nano milling requirements. So the design and fabrication of custom micro milling tools are necessary. In this paper, a micro straight edge endmill (SEE) is designed. Static and dynamic FEM analyses have been done for the SEEs with different rake angles trying to identify their stiffness and natural frequencies. By wire electrical discharge machining (WEDM), the SEEs made of polycrystalline diamond (PCD) with three different rake angles have been fabricated. The evaluation milling on tungsten carbide (WC) and silicon wafer have processed on a nano milling center. Experimental results show the SEEs have a good ability to simultaneously micro/nano milling of both the side and bottom surfaces with submicron surface roughness, and the SEE has high accuracy for large aspect ratio thin wall machining. The milling experiments on silicon wafer have successfully demonstrated that ductile mode machining was achieved and the coolant played an important role in silicon wafer milling

Porous silicon and diatoms micro-shells: an example of inverse biomimetic

Science.gov (United States)

De Tommasi, Edoardo; Rea, Ilaria; Rendina, Ivo; De Stefano, Luca

2011-05-01

Porous silicon (PSi) is by far a very useful technological platform for optical monitoring of chemical and biological substances and due to its peculiar physical and morphological properties it is worldwide used in sensing experiments. On the other hand, we have discovered a natural material, the micro-shells of marine diatoms, ubiquitous unicellular algae, which are made of hydrated amorphous silica, but, most of all, show geometrical structures made of complex patterns of pores which are surprisingly similar to those of porous silicon. Moreover, under laser irradiation, this material is photoluminescent and the photoluminescence is very sensitive to the surrounding atmosphere, which means that the material can act as a transducer. Starting from our experience on PSi devices, we explore the optical and photonic properties of marine diatoms micro-shells in a sort of inverse biomimicry.

Hemispherical cavities on silicon substrates: an overview of micro fabrication techniques

Science.gov (United States)

Poncelet, O.; Rasson, J.; Tuyaerts, R.; Coulombier, M.; Kotipalli, R.; Raskin, J.-P.; Francis, L. A.

2018-04-01

Hemispherical photonic crystals found in species like Papilio blumei and Cicendella chinensis have inspired new applications like anti-counterfeiting devices and gas sensors. In this work, we investigate and compare four different ways to micro fabricate such hemispherical cavities: using colloids as template, by wet (HNA) or dry (XeF2) isotropic etching of silicon and by electrochemical etching of silicon. The shape and the roughness of the obtained cavities have been discussed and the pros/cons for each method are highlighted.

Unified double- and single-sided homogeneous Green’s function representations

Science.gov (United States)

van der Neut, Joost; Slob, Evert

2016-01-01

In wave theory, the homogeneous Green’s function consists of the impulse response to a point source, minus its time-reversal. It can be represented by a closed boundary integral. In many practical situations, the closed boundary integral needs to be approximated by an open boundary integral because the medium of interest is often accessible from one side only. The inherent approximations are acceptable as long as the effects of multiple scattering are negligible. However, in case of strongly inhomogeneous media, the effects of multiple scattering can be severe. We derive double- and single-sided homogeneous Green’s function representations. The single-sided representation applies to situations where the medium can be accessed from one side only. It correctly handles multiple scattering. It employs a focusing function instead of the backward propagating Green’s function in the classical (double-sided) representation. When reflection measurements are available at the accessible boundary of the medium, the focusing function can be retrieved from these measurements. Throughout the paper, we use a unified notation which applies to acoustic, quantum-mechanical, electromagnetic and elastodynamic waves. We foresee many interesting applications of the unified single-sided homogeneous Green’s function representation in holographic imaging and inverse scattering, time-reversed wave field propagation and interferometric Green’s function retrieval. PMID:27436983

Caesium releases under the form of silicon micro-balls during the Fukushima-Daiichi accident. Information note

International Nuclear Information System (INIS)

2016-01-01

After having outlined that the most part (89 per cent) of radioactive cesium released in the atmosphere during the Fukushima accident was made under the form of silicon micro-balls which were more irradiating than other aerosols marked by cesium radioactive isotopes, this note first discusses whether these silicon micro-balls containing radioactive cesium were resulting from a specific phase of atmospheric release. It discusses the nature of these micro-balls, and discusses whether it is possible to quantitatively assess the contribution of these micro-balls to global releases and deposits. It discusses how these micro-balls could have formed, whether their formation can be associated with a specific phase of reactor degradation or with the degradation of a specific reactor. It discusses whether a specific behaviour of these micro-balls can be expected in the environment, and their possible impacts on radiological consequences

Development of new assembly techniques for a silicon micro-vertex detector unit using the flip-chip bonding method

International Nuclear Information System (INIS)

Saitoh, Y.; Takeuchi, H.; Mandai, M.; Kanazawa, H.; Yamanaka, J.; Miyahara, S.; Kamiya, M.; Fujita, Y.; Higashi, Y.; Ikeda, H.; Ikeda, M.; Koike, S.; Matsuda, T.; Ozaki, H.; Tanaka, M.; Tsuboyama, T.; Avrillon, S.; Okuno, S.; Haba, J.; Hanai, H.; Mori, S.; Yusa, K.; Fukunaga, C.

1994-01-01

Full-size models of a detector unit for a silicon micro-vertex detector were built for the KEK B factory. The Flip-Chip Bonding (FCB) method using a new type anisotropic conductive film was examined. The structure using the FCB method successfully provides a new architecture for the silicon micro-vertex detector unit. (orig.)

Silicon technology-based micro-systems for atomic force microscopy/photon scanning tunnelling microscopy.

Science.gov (United States)

Gall-Borrut, P; Belier, B; Falgayrettes, P; Castagne, M; Bergaud, C; Temple-Boyer, P

2001-04-01

We developed silicon nitride cantilevers integrating a probe tip and a wave guide that is prolonged on the silicon holder with one or two guides. A micro-system is bonded to a photodetector. The resulting hybrid system enables us to obtain simultaneously topographic and optical near-field images. Examples of images obtained on a longitudinal cross-section of an optical fibre are shown.

Radiation hardness tests of double-sided 3D strip sensors with passing-through columns

Energy Technology Data Exchange (ETDEWEB)

Dalla Betta, Gian-Franco, E-mail: gianfranco.dallabetta@unitn.it [Dipartimento di Ingegneria Industriale, Università degli Studi di Trento, Via Sommarive 9, I-38123 Trento (Italy); INFN TIFPA, Via Sommarive 14, I-38123 Trento (Italy); Betancourt, Christopher [Institute of Physics, University of Freiburg, Hermann-Herder-Str. 3, 79104 Freiburg (Germany); Boscardin, Maurizio; Giacomini, Gabriele [Fondazione Bruno Kessler, Centro per i Materiali e i Microsistemi (FBK-CMM), Via Sommarive 18, I-38123 Trento (Italy); Jakobs, Karl; Kühn, Susanne [Institute of Physics, University of Freiburg, Hermann-Herder-Str. 3, 79104 Freiburg (Germany); Lecini, Besnik [Dipartimento di Ingegneria Industriale, Università degli Studi di Trento, Via Sommarive 9, I-38123 Trento (Italy); Mendicino, Roberto [Dipartimento di Ingegneria Industriale, Università degli Studi di Trento, Via Sommarive 9, I-38123 Trento (Italy); INFN TIFPA, Via Sommarive 14, I-38123 Trento (Italy); Mori, Riccardo; Parzefall, Ulrich [Institute of Physics, University of Freiburg, Hermann-Herder-Str. 3, 79104 Freiburg (Germany); Povoli, Marco [Dipartimento di Ingegneria Industriale, Università degli Studi di Trento, Via Sommarive 9, I-38123 Trento (Italy); Thomas, Maira [Institute of Physics, University of Freiburg, Hermann-Herder-Str. 3, 79104 Freiburg (Germany); Zorzi, Nicola [Fondazione Bruno Kessler, Centro per i Materiali e i Microsistemi (FBK-CMM), Via Sommarive 18, I-38123 Trento (Italy)

2014-11-21

This paper deals with a radiation hardness study performed on double-sided 3D strip sensors with passing-through columns. Selected results from the characterization of the irradiated sensors with a beta source and a laser setup are reported and compared to pre-irradiation results and to TCAD simulations. The sensor performance in terms of signal efficiency is found to be in good agreement with that of other 3D sensors irradiated at the same fluences and tested under similar experimental conditions. - Highlights: • We report results from 3D silicon strip detectors irradiated up to HL-LHC fluences. • I–V curves, noise, charge collection measurements and laser scans are shown. • In all sensors, signals are distinguished from the noise already at low voltage. • Signal efficiency is in agreement with values expected from the electrode geometry. • Efficiency and spatial uniformity would benefit from higher operation voltages.

Radiation hardness tests of double-sided 3D strip sensors with passing-through columns

International Nuclear Information System (INIS)

Dalla Betta, Gian-Franco; Betancourt, Christopher; Boscardin, Maurizio; Giacomini, Gabriele; Jakobs, Karl; Kühn, Susanne; Lecini, Besnik; Mendicino, Roberto; Mori, Riccardo; Parzefall, Ulrich; Povoli, Marco; Thomas, Maira; Zorzi, Nicola

2014-01-01

This paper deals with a radiation hardness study performed on double-sided 3D strip sensors with passing-through columns. Selected results from the characterization of the irradiated sensors with a beta source and a laser setup are reported and compared to pre-irradiation results and to TCAD simulations. The sensor performance in terms of signal efficiency is found to be in good agreement with that of other 3D sensors irradiated at the same fluences and tested under similar experimental conditions. - Highlights: • We report results from 3D silicon strip detectors irradiated up to HL-LHC fluences. • I–V curves, noise, charge collection measurements and laser scans are shown. • In all sensors, signals are distinguished from the noise already at low voltage. • Signal efficiency is in agreement with values expected from the electrode geometry. • Efficiency and spatial uniformity would benefit from higher operation voltages

Deposition and micro electrical discharge machining of CVD-diamond layers incorporated with silicon

Science.gov (United States)

Kühn, R.; Berger, T.; Prieske, M.; Börner, R.; Hackert-Oschätzchen, M.; Zeidler, H.; Schubert, A.

2017-10-01

In metal forming, lubricants have to be used to prevent corrosion or to reduce friction and tool wear. From an economical and ecological point of view, the aim is to avoid the usage of lubricants. For dry deep drawing of aluminum sheets it is intended to apply locally micro-structured wear-resistant carbon based coatings onto steel tools. One type of these coatings are diamond layers prepared by chemical vapor deposition (CVD). Due to the high strength of diamond, milling processes are unsuitable for micro-structuring of these layers. In contrast to this, micro electrical discharge machining (micro EDM) is a suitable process for micro-structuring CVD-diamond layers. Due to its non-contact nature and its process principle of ablating material by melting and evaporating, it is independent of the hardness, brittleness or toughness of the workpiece material. In this study the deposition and micro electrical discharge machining of silicon incorporated CVD-diamond (Si-CVD-diamond) layers were presented. For this, 10 µm thick layers were deposited on molybdenum plates by a laser-induced plasma CVD process (LaPlas-CVD). For the characterization of the coatings RAMAN- and EDX-analyses were conducted. Experiments in EDM were carried out with a tungsten carbide tool electrode with a diameter of 90 µm to investigate the micro-structuring of Si-CVD-diamond. The impact of voltage, discharge energy and tool polarity on process speed and resulting erosion geometry were analyzed. The results show that micro EDM is a suitable technology for micro-structuring of silicon incorporated CVD-diamond layers.

Multi-scale-nonlinear interactions among micro-turbulence, double tearing instability and zonal flows

International Nuclear Information System (INIS)

Ishizawa, A.; Nakajima, N.

2007-01-01

Micro-turbulence and macro-magnetohydrodynamic (macro-MHD) instabilities can appear in plasma at the same time and interact with each other in a plasma confinement. The multi-scale-nonlinear interaction among micro-turbulence, double tearing instability and zonal flow is investigated by numerically solving a reduced set of two-fluid equations. It is found that the double tearing instability, which is a macro-MHD instability, appears in an equilibrium formed by a balance between micro-turbulence and zonal flow when the double tearing mode is unstable. The roles of the nonlinear and linear terms of the equations in driving the zonal flow and coherent convective cell flow of the double tearing mode are examined. The Reynolds stress drives zonal flow and coherent convective cell flow, while the ion diamagnetic term and Maxwell stress oppose the Reynolds stress drive. When the double tearing mode grows, linear terms in the equations are dominant and they effectively release the free energy of the equilibrium current gradient

The BaBar silicon vertex tracker

International Nuclear Information System (INIS)

Bozzi, C.; Carassiti, V.; Ramusino, A. Cotta; Dittongo, S.; Folegani, M.; Piemontese, L.; Abbott, B.K.; Breon, A.B.; Clark, A.R.; Dow, S.; Fan, Q.; Goozen, F.; Hernikl, C.; Karcher, A.; Kerth, L.T.; Kipnis, I.; Kluth, S.; Lynch, G.; Levi, M.; Luft, P.; Luo, L.; Nyman, M.; Pedrali-Noy, M.; Roe, N.A.; Zizka, G.; Roberts, D.; Barni, D.; Brenna, E.; Defendi, I.; Forti, A.; Giugni, D.; Lanni, F.; Palombo, F.; Vaniev, V.; Leona, A.; Mandelli, E.; Manfredi, P.F.; Perazzo, A.; Re, V.; Angelini, C.; Batignani, G.; Bettarini, S.; Bondioli, M.; Bosi, F.; Calderini, G.; Carpinelli, M.; Dutra, F.; Forti, F.; Gagliardi, D.; Giorgi, M.A.; Lusiani, A.; Mammini, P.; Morganti, M.; Morsani, F.; Paoloni, E.; Profeti, A.; Rama, M.; Rampino, G.; Rizzo, G.; Sandrelli, F.; Simi, G.; Triggiani, G.; Tritto, S.; Vitale, R.; Burchat, P.; Cheng, C.; Kirkby, D.; Meyer, T.; Roat, C.; Bona, M.; Bianchi, F.; Daudo, F.; Girolamo, B. Di; Gamba, D.; Giraudo, G.; Grosso, P.; Romero, A.; Smol, A.; Trapani, P.; Zanin, D.; Bosisio, L.; Ricca, G. Della; Lanceri, L.; Pompili, A.; Poropat, P.; Prest, M.; Rastelli, C.; Vallazza, E.; Vuagnin, G.; Hast, C.; Potter, E.P.; Sharma, V.; Burke, S.; Callahan, D.; Campagnari, C.; Dahmes, B.; Eppich, A.; Hale, D.; Hall, K.; Hart, P.; Kuznetsova, N.; Kyre, S.; Levy, S.; Long, O.; May, J.; Richman, J.; Verkerke, W.; Witherell, M.; Beringer, J.; Eisner, A.M.; Frey, A.; Grillo, A.; Grothe, M.; Johnson, R.; Kroeger, W.; Lockman, W.; Pulliam, T.; Rowe, W.; Schmitz, R.; Seiden, A.; Spencer, E.; Turri, M.; Wilder, M.; Charles, E.; Elmer, P.; Nielsen, J.; Orejudos, W.; Scott, I.; Walsh, J.; Zobernig, H.

2000-01-01

The BaBar Silicon Vertex Tracker (SVT) is designed to provide the high-precision vertexing necessary for making measurements of CP violation at the SLAC B-Factory PEP-II. The instrument consists of five layers of double-sided silicon strip detectors and has been installed in the BaBar experiment and taking colliding beam data since May 1999. An overview of the design as well as performance and experience from the initial running will be presented

All-solid-state supercapacitors on silicon using graphene from silicon carbide

Energy Technology Data Exchange (ETDEWEB)

Wang, Bei; Ahmed, Mohsin; Iacopi, Francesca, E-mail: f.iacopi@griffith.edu.au [Environmental Futures Research Institute, Griffith University, Nathan 4111 (Australia); Wood, Barry [Centre for Microscopy and Microanalysis, The University of Queensland, St. Lucia 4072 (Australia)

2016-05-02

Carbon-based supercapacitors are lightweight devices with high energy storage performance, allowing for faster charge-discharge rates than batteries. Here, we present an example of all-solid-state supercapacitors on silicon for on-chip applications, paving the way towards energy supply systems embedded in miniaturized electronics with fast access and high safety of operation. We present a nickel-assisted graphitization method from epitaxial silicon carbide on a silicon substrate to demonstrate graphene as a binder-free electrode material for all-solid-state supercapacitors. We obtain graphene electrodes with a strongly enhanced surface area, assisted by the irregular intrusion of nickel into the carbide layer, delivering a typical double-layer capacitance behavior with a specific area capacitance of up to 174 μF cm{sup −2} with about 88% capacitance retention over 10 000 cycles. The fabrication technique illustrated in this work provides a strategic approach to fabricate micro-scale energy storage devices compatible with silicon electronics and offering ultimate miniaturization capabilities.

All-solid-state supercapacitors on silicon using graphene from silicon carbide

International Nuclear Information System (INIS)

Wang, Bei; Ahmed, Mohsin; Iacopi, Francesca; Wood, Barry

2016-01-01

Carbon-based supercapacitors are lightweight devices with high energy storage performance, allowing for faster charge-discharge rates than batteries. Here, we present an example of all-solid-state supercapacitors on silicon for on-chip applications, paving the way towards energy supply systems embedded in miniaturized electronics with fast access and high safety of operation. We present a nickel-assisted graphitization method from epitaxial silicon carbide on a silicon substrate to demonstrate graphene as a binder-free electrode material for all-solid-state supercapacitors. We obtain graphene electrodes with a strongly enhanced surface area, assisted by the irregular intrusion of nickel into the carbide layer, delivering a typical double-layer capacitance behavior with a specific area capacitance of up to 174 μF cm"−"2 with about 88% capacitance retention over 10 000 cycles. The fabrication technique illustrated in this work provides a strategic approach to fabricate micro-scale energy storage devices compatible with silicon electronics and offering ultimate miniaturization capabilities.

Belle II silicon vertex detector

Energy Technology Data Exchange (ETDEWEB)

Adamczyk, K. [H. Niewodniczanski Institute of Nuclear Physics, Krakow 31-342 (Poland); Aihara, H. [Department of Physics, University of Tokyo, Tokyo 113-0033 (Japan); Angelini, C. [Dipartimento di Fisica, Università di Pisa, I-56127 Pisa (Italy); INFN Sezione di Pisa, I-56127 Pisa (Italy); Aziz, T.; Babu, V. [Tata Institute of Fundamental Research, Mumbai 400005 (India); Bacher, S. [H. Niewodniczanski Institute of Nuclear Physics, Krakow 31-342 (Poland); Bahinipati, S. [Indian Institute of Technology Bhubaneswar, Satya Nagar (India); Barberio, E.; Baroncelli, Ti.; Baroncelli, To. [School of Physics, University of Melbourne, Melbourne, Victoria 3010 (Australia); Basith, A.K. [Indian Institute of Technology Madras, Chennai 600036 (India); Batignani, G. [Dipartimento di Fisica, Università di Pisa, I-56127 Pisa (Italy); INFN Sezione di Pisa, I-56127 Pisa (Italy); Bauer, A. [Institute of High Energy Physics, Austrian Academy of Sciences, 1050 Vienna (Austria); Behera, P.K. [Indian Institute of Technology Madras, Chennai 600036 (India); Bergauer, T. [Institute of High Energy Physics, Austrian Academy of Sciences, 1050 Vienna (Austria); Bettarini, S. [Dipartimento di Fisica, Università di Pisa, I-56127 Pisa (Italy); INFN Sezione di Pisa, I-56127 Pisa (Italy); Bhuyan, B. [Indian Institute of Technology Guwahati, Assam 781039 (India); Bilka, T. [Faculty of Mathematics and Physics, Charles University, 121 16 Prague (Czech Republic); Bosi, F. [INFN Sezione di Pisa, I-56127 Pisa (Italy); Bosisio, L. [Dipartimento di Fisica, Università di Trieste, I-34127 Trieste (Italy); INFN Sezione di Trieste, I-34127 Trieste (Italy); and others

2016-09-21

The Belle II experiment at the SuperKEKB collider in Japan is designed to indirectly probe new physics using approximately 50 times the data recorded by its predecessor. An accurate determination of the decay-point position of subatomic particles such as beauty and charm hadrons as well as a precise measurement of low-momentum charged particles will play a key role in this pursuit. These will be accomplished by an inner tracking device comprising two layers of pixelated silicon detector and four layers of silicon vertex detector based on double-sided microstrip sensors. We describe herein the design, prototyping and construction efforts of the Belle-II silicon vertex detector.

Double-walled silicon nanotubes: an ab initio investigation

Science.gov (United States)

Lima, Matheus P.

2018-02-01

The synthesis of silicon nanotubes realized in the last decade demonstrates multi-walled tubular structures consisting of Si atoms in {{sp}}2 and the {{sp}}3 hybridizations. However, most of the theoretical models were elaborated taking as the starting point {{sp}}2 structures analogous to carbon nanotubes. These structures are unfavorable due to the natural tendency of the Si atoms to undergo {{sp}}3. In this work, through ab initio simulations based on density functional theory, we investigated double-walled silicon nanotubes proposing layered tubes possessing most of the Si atoms in an {{sp}}3 hybridization, and with few {{sp}}2 atoms localized at the outer wall. The lowest-energy structures have metallic behavior. Furthermore, the possibility to tune the band structure with the application of a strain was demonstrated, inducing a metal-semiconductor transition. Thus, the behavior of silicon nanotubes differs significantly from carbon nanotubes, and the main source of the differences is the distortions in the lattice associated with the tendency of Si to make four chemical bonds.

Performance of integrated retainer rings in silicon micro-turbines with thrust style micro-ball bearings

International Nuclear Information System (INIS)

Hergert, Robert J; Holmes, Andrew S; Hanrahan, Brendan; Ghodssi, Reza

2013-01-01

This work explores the performance of different silicon retainer ring designs when integrated into silicon micro-turbines (SMTs) incorporating thrust style bearings supported on 500 µm diameter steel balls. Experimental performance curves are presented for SMTs with rotor diameters of 5 mm and 10 mm, each with five different retainer designs varying in mechanical rigidity, ball pocket shape and ball complement. It was found that the different retainer designs yielded different performance curves, with the closed pocket designs consistently requiring lower input power for a given rotation speed, and the most rigid retainers giving the best performance overall. Both 5 mm and 10 mm diameter devices have shown repeatable performance at rotation speeds up to and exceeding 20 000 RPM with input power levels below 2 W, and devices were tested for over 2.5 million revolutions without failure. Retainer rings are commonly used in macro-scale bearings to ensure uniform spacing between the rolling elements. The integration of retainers into micro-bearings could lower costs by reducing the number of balls required for stable operation, and also open up the possibility of ‘smart’ bearings with integrated sensors to monitor the bearing status. (paper)

Modulated surface textures for enhanced scattering in thin-film silicon solar cells

NARCIS (Netherlands)

Isabella, O.; Battaglia, C.; Ballif, C.; Zeman, M.

2012-01-01

Nano-scale randomly textured front transparent oxides are superposed on micro-scale etched glass substrates to form modulated surface textures. The resulting enhanced light scattering is implemented in single and double junction thin-film silicon solar cells.

The performance of silicon detectors for the SiliPET project: A small animal PET scanner based on stacks of silicon detectors

International Nuclear Information System (INIS)

Auricchio, Natalia; Domenico, Giovanni di; Zavattini, Guido; Milano, Luciano; Malaguti, Roberto

2011-01-01

We propose a new scanner for small animal Positron Emission Tomography (PET) based on stacks of double sided silicon detectors. Each stack is made of 40 planar detectors with dimension 60x60x1 mm 3 and 128 orthogonal strips on both sides to read the two coordinates of interaction, the third being the detector number in the stack. Multiple interactions in a stack are discarded by an exclusive OR applied between each detector plane of a stack. In this way we achieve a precise determination of the interaction point of the two 511 keV photons. The reduced dimensions of the scanner also improve the solid angle coverage resulting in a high sensitivity. Preliminary results were obtained with MEGA prototype tracker (11 double sided Si detector layers), divided into two stacks 2 cm apart made of, respectively, 5 and 6 prototype layers, placing a small spherical 22 Na source in different positions. We report on the results, spatial resolution, imaging and timing performances obtained with double sided silicon detectors, manufactured by ITC-FBK, having an active area of 3x3 cm 2 , thickness of 1 mm and a strip pitch of 500μm. Two different strip widths of 300 and 200μm equipped with 64 orthogonal p and n strips on opposite sides were read out with the VATAGP2.5 ASIC, a 128-channel 'general purpose' charge sensitive amplifier.

Micro direct methanol fuel cell with perforated silicon-plate integrated ionomer membrane

DEFF Research Database (Denmark)

Larsen, Jackie Vincent; Dalslet, Bjarke Thomas; Johansson, Anne-Charlotte Elisabeth Birgitta

2014-01-01

This article describes the fabrication and characterization of a silicon based micro direct methanol fuel cell using a Nafion ionomer membrane integrated into a perforated silicon plate. The focus of this work is to provide a platform for micro- and nanostructuring of a combined current collector...... at a perforation ratio of 40.3%. The presented fuel cells also show a high volumetric peak power density of 2 mW cm−3 in light of the small system volume of 480 μL, while being fully self contained and passively feed....... and catalytic electrode. AC impedance spectroscopy is utilized alongside IV characterization to determine the influence of the plate perforation geometries on the cell performance. It is found that higher ratios of perforation increases peak power density, with the highest achieved being 2.5 mW cm−2...

The preparation method of solid boron solution in silicon carbide in the form of micro powder

International Nuclear Information System (INIS)

Pampuch, R.; Stobierski, L.; Lis, J.; Bialoskorski, J.; Ermer, E.

1993-01-01

The preparation method of solid boron solution in silicon carbide in the form of micro power has been worked out. The method consists in introducing mixture of boron, carbon and silicon and heating in the atmosphere of inert gas to the 1573 K

The detector response simulation for the CBM silicon tracking system as a tool for hit error estimation

Energy Technology Data Exchange (ETDEWEB)

Malygina, Hanna [Goethe Universitaet Frankfurt (Germany); KINR, Kyiv (Ukraine); GSI Helmholtzzentrum fuer Schwerionenforschung GmbH, Darmstadt (Germany); Friese, Volker; Zyzak, Maksym [GSI Helmholtzzentrum fuer Schwerionenforschung GmbH, Darmstadt (Germany); Collaboration: CBM-Collaboration

2016-07-01

The Compressed Baryonic Matter experiment(CBM) at FAIR is designed to explore the QCD phase diagram in the region of high net-baryon densities. As the central detector component, the Silicon Tracking System (STS) is based on double-sided micro-strip sensors. To achieve realistic modelling, the response of the silicon strip sensors should be precisely included in the digitizer which simulates a complete chain of physical processes caused by charged particles traversing the detector, from charge creation in silicon to a digital output signal. The current implementation of the STS digitizer comprises non-uniform energy loss distributions (according to the Urban theory), thermal diffusion and charge redistribution over the read-out channels due to interstrip capacitances. Using the digitizer, one can test an influence of each physical processes on hit error separately. We have developed a new cluster position finding algorithm and a hit error estimation method for it. Estimated errors were verified by the width of pull distribution (expected to be about unity) and its shape.

Design and fabrication of a double-sided piezoelectric transducer for harvesting vibration power

Energy Technology Data Exchange (ETDEWEB)

Chang, Wei-Tsai; Chen, Ying-Chung [Department of Electrical Engineering, National Sun Yat-Sen University, Kaohsiung, Taiwan, ROC (China); Kao, Kuo-Sheng [Department of Computer and Communication, Shu-Te University, Kaohsiung, Taiwan, ROC (China); Chu, Yu-Hsien [Department of Electrical Engineering, National Sun Yat-Sen University, Kaohsiung, Taiwan, ROC (China); Cheng, Chien-Chuan, E-mail: chengccc@dlit.edu.tw [Department of Electronic Engineering, De Lin Institute of Technology, Taipei, Taiwan, ROC (China)

2013-02-01

This investigation examines a means of integrating high-performance ZnO piezoelectric thin films with a flexible stainless steel substrate (SUS304) to fabricate a double-sided piezoelectric transducer for vibration-energy harvesting applications. The double-sided piezoelectric transducer is constructed by depositing ZnO piezoelectric thin films on both the front and the back sides of the SUS304 substrate. The titanium and platinum layers were deposited using a dual-gun DC sputtering system between the ZnO piezoelectric thin film and the back side of the SUS304 substrate. The scanning electron microscopy and X-ray diffraction of ZnO piezoelectric films reveal a rigid surface structure and a highly c-axis-preferring orientation. To fabricate a transducer with a low resonant frequency, a tip-mass of 0.5 g and a vibration-area of 1 cm{sup 2} are designed, based on the cantilever vibration theory. The maximum open circuit voltage of the power transducer is approximately 18 V. After rectification and filtering through a 33 nF capacitor, a specific power output of 1.31 μW/cm{sup 2} is obtained from the transducers with a load resistance of 6 MΩ. The variation of the power output of ± 0.001% is obtained after 24-hour continuous test. - Highlights: ► A double-sided piezoelectric transducer is fabricated with the ZnO thin films. ► Vibrated frequency of a double-sided transducer is designed and presented. ► A maximum output power of 3.23 μW/cm{sup 2} is obtained under turbulent vibration.

Magnetic field sensor based on double-sided polished fibre-Bragg gratings

International Nuclear Information System (INIS)

Tien, Chuen-Lin; Hwang, Chang-Chou; Liu, Wen-Feng; Chen, Hong-Wei

2009-01-01

A new magnetic field sensor based on double-sided polished fibre-Bragg gratings (FBGs) coated with an iron thin film for measuring magnetic flux density was experimentally demonstrated with the sensitivity of 25.6 nm T −1 . The sensing mechanism is based on the Bragg wavelength shift as the magnetic field is measured by the proposed sensing head. Results of this study present the intensity of the reflected optical signal as a function of the applied strain on the FBG. This paper shows that an improved method for sensing the wavelength shift with changes in external magnetic field is developed by use of the double-sided polished FBGs

Front-side biasing of n-in-p silicon strip detectors

CERN Document Server

Baselga Bacardit, Marta; Dierlamm, Alexander Hermann; Dragicevic, Marko Gerhart; Konig, Axel; Pree, Elias; Metzler, Marius

2018-01-01

Front-side biasing is an alternative method to bias a silicon sensor. Instead of directly applying high voltage to the back-side, one can exploit the conductive properties of the edge region to bias a detector exclusively via top-side connections. This option can be beneficial for the detector design and might help to facilitate the assembly process of modules. The effective bias voltage is affected by the resistance of the edge region and the sensor current. The measurements of n-in-p sensors performed to qualify this concept have shown that the voltage drop emerging from this resistance is negligible before irradiation. After irradiation, however, the resistivity of the edge region increases with fluence and saturates in the region of 10$^{7}\\,\\Omega$ at a fluence of 1$\\,\\cdot\\,10^{15}\\,$n$_{\\textrm{eq}}$cm$^{-2}$. The measurements are complemented by TCAD simulations and interpretations of the observed effects.

Controlled delivery of acyclovir from porous silicon micro- and nanoparticles

Science.gov (United States)

Maniya, Nalin H.; Patel, Sanjaykumar R.; Murthy, Z. V. P.

2015-03-01

In this work, micro- and nanoparticles of porous silicon (PSi) are demonstrated to act as effective carrier for the controlled delivery of acyclovir (ACV). PSi films prepared by electrochemical etching were fractured by ultrasonication to prepare micro- and nanoparticles. PSi native particles were thermally oxidized (TOPSi) and thermally hydrosilylated using undecylenic acid (UnPSi). PSi particles with three different surface chemistries were then loaded with ACV by physical adsorption and covalent attachment. Such particles were characterized by scanning electron microscopy, dynamic light scattering, and Fourier transform infrared spectroscopy. In vitro ACV release experiments in phosphate buffered saline showed sustained release behaviour from both micro- and nanoparticles and order of release was found to be native PSi > TOPSi > UnPSi. Drug release kinetics study using Korsmeyer-Peppas model suggested a combination of both drug diffusion and Si scaffold erosion based drug release mechanisms.

Mechanical integration of the detector components for the CBM silicon tracking system

Energy Technology Data Exchange (ETDEWEB)

Vasylyev, Oleg; Niebur, Wolfgang [GSI Helmholtzzentrum fuer Schwerionenforschung GmbH, Darmstadt (Germany); Collaboration: CBM-Collaboration

2016-07-01

The Compressed Baryonic Matter experiment (CBM) at FAIR is designed to explore the QCD phase diagram in the region of high net-baryon densities. The central detector component, the Silicon Tracking System (STS) is based on double-sided micro-strip sensors. In order to achieve the physics performance, the detector mechanical structures should be developed taking into account the requirements of the CBM experiments: low material budget, high radiation environment, interaction rates, aperture for the silicon tracking, detector segmentation and mounting precision. A functional plan of the STS and its surrounding structural components is being worked out from which the STS system shape is derived and the power and cooling needs, the connector space requirements, life span of components and installation/repair aspects are determined. The mechanical integration is at the point of finalizing the design stage and moving towards production readiness. This contribution shows the current processing state of the following engineering tasks: construction space definition, carbon ladder shape and manufacturability, beam-pipe feedthrough structure, prototype construction, cable routing and modeling of the electronic components.

The BaBar silicon vertex tracker, performance and running experience

CERN Document Server

Re, V; Bozzi, C; Carassiti, V; Cotta-Ramusino, A; Piemontese, L; Breon, A B; Brown, D; Clark, A R; Goozen, F; Hernikl, C; Kerth, L T; Gritsan, A; Lynch, G; Perazzo, A; Roe, N A; Zizka, G; Roberts, D; Schieck, J; Brenna, E; Citterio, M; Lanni, F; Palombo, F; Ratti, L; Manfredi, P F; Angelini, C; Batignani, G; Bettarini, S; Bondioli, M; Bosi, F; Bucci, F; Calderini, G; Carpinelli, M; Ceccanti, M; Forti, F; Gagliardi, D J; Giorgi, M A; Lusiani, A; Mammini, P; Morganti, M; Morsani, F; Neri, N; Paoloni, E; Profeti, A; Rama, M; Rizzo, G; Sandrelli, F; Simi, G; Triggiani, G; Walsh, J; Burchat, Patricia R; Cheng, C; Kirkby, D; Meyer, T I; Roat, C; Bóna, M; Bianchi, F; Gamba, D; Trapani, P; Bosisio, L; Della Ricca, G; Dittongo, S; Lanceri, L; Pompili, A; Poropat, P; Rashevskaia, I; Vuagnin, G; Burke, S; Callahan, D; Campagnari, C; Dahmes, B; Hale, D; Hart, P; Kuznetsova, N; Kyre, S; Levy, S; Long, O; May, J; Mazur, M; Richman, J; Verkerke, W; Witherell, M; Beringer, J; Eisner, A M; Frey, A; Grillo, A A; Grothe, M; Johnson, R P; Kröger, W; Lockman, W S; Pulliam, T; Rowe, W; Schmitz, R E; Seiden, A; Spencer, E N; Turri, M; Walkowiak, W; Wilder, M; Wilson, M; Charles, E; Elmer, P; Nielsen, J; Orejudos, W; Scott, I; Zobernig, H

2002-01-01

The Silicon Vertex Tracker (SVT) of the BaBar experiment at the PEP-II asymmetric B factory is a five-layer double-sided, AC-coupled silicon microstrip detector. It represents the crucial element to precisely measure the decay position of B mesons and extract time-dependent CP asymmetries. The SVT architecture is shown and its performance is described, with emphasis on hit resolutions and efficiencies.

The BaBar silicon vertex tracker, performance and running experience

International Nuclear Information System (INIS)

Re, V.; Borean, C.; Bozzi, C.; Carassiti, V.; Cotta Ramusino, A.; Piemontese, L.; Breon, A.B.; Brown, D.; Clark, A.R.; Goozen, F.; Hernikl, C.; Kerth, L.T.; Gritsan, A.; Lynch, G.; Perazzo, A.; Roe, N.A.; Zizka, G.; Roberts, D.; Schieck, J.; Brenna, E.; Citterio, M.; Lanni, F.; Palombo, F.; Ratti, L.; Manfredi, P.F.; Angelini, C.; Batignani, G.; Bettarini, S.; Bondioli, M.; Bosi, F.; Bucci, F.; Calderini, G.; Carpinelli, M.; Ceccanti, M.; Forti, F.; Gagliardi, D.; Giorgi, M.A.; Lusiani, A.; Mammini, P.; Morganti, M.; Morsani, F.; Neri, N.; Paoloni, E.; Profeti, A.; Rama, M.; Rizzo, G.; Sandrelli, F.; Simi, G.; Triggiani, G.; Walsh, J.; Burchat, P.; Cheng, C.; Kirkby, D.; Meyer, T.I.; Roat, C.; Bona, M.; Bianchi, F.; Gamba, D.; Trapani, P.; Bosisio, L.; Della Ricca, G.; Dittongo, S.; Lanceri, L.; Pompili, A.; Poropat, P.; Rashevskaia, I.; Vuagnin, G.; Burke, S.; Callahan, D.; Campagnari, C.; Dahmes, B.; Hale, D.; Hart, P.; Kuznetsova, N.; Kyre, S.; Levy, S.; Long, O.; May, J.; Mazur, M.; Richman, J.; Verkerke, W.; Witherell, M.; Beringer, J.; Eisner, A.M.; Frey, A.; Grillo, A.A.; Grothe, M.; Johnson, R.P.; Kroeger, W.; Lockman, W.S.; Pulliam, T.; Rowe, W.; Schmitz, R.E.; Seiden, A.; Spencer, E.N.; Turri, M.; Walkowiak, W.; Wilder, M.; Wilson, M.; Charles, E.; Elmer, P.; Nielsen, J.; Orejudos, W.; Scott, I.; Zobernig, H.

2002-01-01

The Silicon Vertex Tracker (SVT) of the BaBar experiment at the PEP-II asymmetric B factory is a five-layer double-sided, AC-coupled silicon microstrip detector. It represents the crucial element to precisely measure the decay position of B mesons and extract time-dependent CP asymmetries. The SVT architecture is shown and its performance is described, with emphasis on hit resolutions and efficiencies

Characterization of the first double-sided 3D radiation sensors fabricated at FBK on 6-inch silicon wafers

International Nuclear Information System (INIS)

Sultan, D.M.S.; Mendicino, R.; Betta, G.-F. Dalla; Boscardin, M.; Ronchin, S.; Zorzi, N.

2015-01-01

Following 3D pixel sensor production for the ATLAS Insertable B-Layer, Fondazione Bruno Kessler (FBK) fabrication facility has recently been upgraded to process 6-inch wafers. In 2014, a test batch was fabricated to check for possible issues relevant to this upgrade. While maintaining a double-sided fabrication technology, some process modifications have been investigated. We report here on the technology and the design of this batch, and present selected results from the electrical characterization of sensors and test structures. Notably, the breakdown voltage is shown to exceed 200 V before irradiation, much higher than in earlier productions, demonstrating robustness in terms of radiation hardness for forthcoming productions aimed at High Luminosity LHC upgrades

Finite element modelling and experimental characterization of an electro-thermally actuated silicon-polymer micro gripper

International Nuclear Information System (INIS)

Krecinic, F; Duc, T Chu; Sarro, P M; Lau, G K

2008-01-01

This paper presents simulation and experimental characterization of an electro-thermally actuated micro gripper. This micro actuator can conceptually be seen as a bi-morph structure of SU-8 and silicon, actuated by thermal expansion of the polymer. The polymer micro gripper with an embedded comb-like silicon skeleton is designed to reduce unwanted out-of-plane bending of the actuator, while offering a large gripper stroke. The temperature and displacement field of the micro gripper structure is determined using a two-dimensional finite element analysis. This analysis is compared to experimental data from steady-state and transient measurements of the integrated heater resistance, which depends on the average temperature of the actuator. The stability of the polymer actuator is evaluated by recording the transient behaviour of the actual jaw displacements. The maximum single jaw displacement of this micro gripper design is 34 µm at a driving voltage of 4 V and an average actuator temperature of 170 °C. The transient thermal response is modelled by a first-order system with a characteristic time constant of 11.1 ms. The simulated force capability of the device is 0.57 mN per µm jaw displacement

Regulating Effect of Asymmetrical Impeller on the Flow Distributions of Double-sided Centrifugal Compressor

Science.gov (United States)

Yang, Ce; Liu, Yixiong; Yang, Dengfeng; Wang, Benjiang

2017-11-01

To achieve the rebalance of flow distributions of double-sided impellers, a method of improving the radius of rear impeller is presented in this paper. It is found that the flow distributions of front and rear impeller can be adjusted effectively by increasing the radius of rear impeller, thus improves the balance of flow distributions of front and rear impeller. Meanwhile, the working conversion mode process of double-sided centrifugal compressor is also changed. Further analysis shows that the flowrates of blade channels in front impeller are mainly influenced by the circumferential distributions of static pressure in the volute. But the flowrates of rear impeller blade channels are influenced by the outlet flow field of bent duct besides the effects of static pressure distributions in the volute. In the airflow interaction area downstream, the flowrate of blade channel is obviously smaller. By increasing the radius of rear impeller, the work capacity of rear impeller is enhanced, the working mode conversion process from parallel working mode of double-sided impeller to the single impeller working mode is delayed, and the stable working range of double-sided compressor is broadened.

Thermal and hydrodynamic studies for micro-channel cooling for large area silicon sensors in high energy physics experiments

Energy Technology Data Exchange (ETDEWEB)

Flaschel, Nils; Ariza, Dario; Diez, Sergio; Gregor, Ingrid-Maria; Tackmann, Kerstin [Deutsches Elektronen-Synchrotron (DESY), Hamburg (Germany); Gerboles, Marta; Jorda, Xavier; Mas, Roser; Quirion, David; Ullan, Miguel [Centro Nacional de Microelectronica, Barcelona (Spain)

2017-01-15

Micro-channel cooling initially aiming at small-sized high-power integrated circuits is being transferred to the field of high energy physics. Today's prospects of micro-fabricating silicon opens a door to a more direct cooling of detector modules. The challenge in high energy physics is to save material in the detector construction and to cool large areas. In this paper, we are investigating micro-channel cooling as a candidate for a future cooling system for silicon detectors in a generic research and development approach. The work presented in this paper includes the production and the hydrodynamic and thermal testing of a micro-channel equipped prototype optimized to achieve a homogeneous flow distribution. Furthermore, the device was simulated using finite element methods.

Thermal and hydrodynamic studies for micro-channel cooling for large area silicon sensors in high energy physics experiments

International Nuclear Information System (INIS)

Flaschel, Nils; Ariza, Dario; Diez, Sergio; Gregor, Ingrid-Maria; Tackmann, Kerstin; Gerboles, Marta; Jorda, Xavier; Mas, Roser; Quirion, David; Ullan, Miguel

2017-01-01

Micro-channel cooling initially aiming at small-sized high-power integrated circuits is being transferred to the field of high energy physics. Today's prospects of micro-fabricating silicon opens a door to a more direct cooling of detector modules. The challenge in high energy physics is to save material in the detector construction and to cool large areas. In this paper, we are investigating micro-channel cooling as a candidate for a future cooling system for silicon detectors in a generic research and development approach. The work presented in this paper includes the production and the hydrodynamic and thermal testing of a micro-channel equipped prototype optimized to achieve a homogeneous flow distribution. Furthermore, the device was simulated using finite element methods.

Fabrication of double-dot single-electron transistor in silicon nanowire

International Nuclear Information System (INIS)

Jo, Mingyu; Kaizawa, Takuya; Arita, Masashi; Fujiwara, Akira; Ono, Yukinori; Inokawa, Hiroshi; Choi, Jung-Bum; Takahashi, Yasuo

2010-01-01

We propose a simple method for fabricating Si single-electron transistors (SET) with coupled dots by means of a pattern-dependent-oxidation (PADOX) method. The PADOX method is known to convert a small one-dimensional Si wire formed on a silicon-on-insulator (SOI) substrate into a SET automatically. We fabricated a double-dot Si SET when we oxidized specially designed Si nanowires formed on SOI substrates. We analyzed the measured electrical characteristics by fitting the measurement and simulation results and confirmed the double-dot formation and the position of the two dots in the Si wire.

Double-shelled silicon anode nanocomposite materials: A facile approach for stabilizing electrochemical performance via interface construction

Science.gov (United States)

Du, Lulu; Wen, Zhongsheng; Wang, Guanqin; Yang, Yan-E.

2018-04-01

The rapid capacity fading induced by volumetric changes is the main issue that hinders the widespread application of silicon anode materials. Thus, double-shelled silicon composite materials where lithium silicate was located between an Nb2O5 coating layer and a silicon active core were configured to overcome the chemical compatibility issues related to silicon and oxides. The proposed composites were prepared via a facile co-precipitation method combined with calcination. Transmission electron microscopy and X-ray photoelectron spectroscopy analysis demonstrated that a transition layer of lithium silicate was constructed successfully, which effectively hindered the thermal inter-diffusion between the silicon and oxide coating layers during heat treatment. The electrochemical performance of the double-shelled silicon composites was enhanced dramatically with a retained specific capacity of 1030 mAh g-1 after 200 cycles at a current density of 200 mA g-1 compared with 598 mAh g-1 for a core-shell Si@Nb2O5 composite that lacked the interface. The lithium silicate transition layer was shown to play an important role in maintaining the high electrochemical stability.

Micro knife-edge optical measurement device in a silicon-on-insulator substrate.

Science.gov (United States)

Chiu, Yi; Pan, Jiun-Hung

2007-05-14

The knife-edge method is a commonly used technique to characterize the optical profiles of laser beams or focused spots. In this paper, we present a micro knife-edge scanner fabricated in a silicon-on-insulator substrate using the micro-electromechanical-system technology. A photo detector can be fabricated in the device to allow further integration with on-chip signal conditioning circuitry. A novel backside deep reactive ion etching process is proposed to solve the residual stress effect due to the buried oxide layer. Focused optical spot profile measurement is demonstrated.

Developments toward a silicon strip tracker for the PANDA experiment

International Nuclear Information System (INIS)

Zaunick, Hans-Georg

2013-01-01

The PANDA detector at the future FAIR facility in Darmstadt will be a key experiment in the understanding of the strong interaction at medium energies where perturbative models fail to describe the quark-quark interaction. An important feature of the detector system is the ability to reconstruct secondary decay vertices of short-lived intermediate states by means of a powerful particle tracking system with the the Micro-Vertex Detector (MVD) as central element to perform high-resolution charmonium and open-charm spectroscopy. The MVD is conceived with pixel detectors in the inner parts and double-sided silicon strip detectors at the outer half in a very lightweight design. The PANDA detector system shall be operated in a self-triggering broadband acquisition mode. Implications on the read-out electronics and the construction of the front-end assemblies are analyzed and evaluation of prototype DSSD-detectors wrt. signal-to-noise ratio, noise figures, charge sharing behavior, spatial resolution and radiation degradation discussed. Methods of electrical sensor characterization with different measurement setups are investigated which may be useful for future large-scale QA procedures. A novel algorithm for recovering multiple degenerate cluster hit patterns of double-sided strip sensors is introduced and a possible architecture of a Module Data Concentrator ASIC (MDC) aggregating multiple front-end data streams conceived. A first integrative concept for the construction and assembly of DSSD modules for the barrel part of the MVD is introduced as a conclusion of the thesis. Furthermore, a detailed description of a simplified procedure for the calculation of displacement damage in compound materials is given as reference which was found useful for the retrieval of non-ionizing energy loss for materials other than silicon.

Heat transfer modeling of double-side arc welding

International Nuclear Information System (INIS)

Sun Junsheng; Wu Chuansong

2002-01-01

If a plasma arc and a TIG arc are connected in serial and with the plasma arc placed on the obverse side and the TIG arc on the opposite side of the workpiece, a special double-side arc welding (DSAW) system will be formed, in which the PAW current is forced to flow through the keyhole along the thickness direction so as to compensate the energy consumed for melting the workpiece and improve the penetration capacity of the PAW arc. By considering the mechanics factors which influence the DSAW pool geometric shape, the control equations of the pool surface deformation are derived, and the mathematics mode for DSAW heat transfer is established by using boundary-fitted non-orthogonal coordinate systems. With this model, the difference between DSAW and PAW heat transfer is analyzed and the reason for the increase of DSAW penetration is explained from the point of heat transfer. The welding process experiments show that calculated results are in good agreement with measured ones

Air-side performance of a micro-channel heat exchanger in wet surface conditions

Directory of Open Access Journals (Sweden)

Srisomba Raviwat

2017-01-01

Full Text Available The effects of operating conditions on the air-side heat transfer, and pressure drop of a micro-channel heat exchanger under wet surface conditions were studied experimentally. The test section was an aluminum micro-channel heat exchanger, consisting of a multi-louvered fin and multi-port mini-channels. Experiments were conducted to study the effects of inlet relative humidity, air frontal velocity, air inlet temperature, and refrigerant temperature on air-side performance. The experimental data were analyzed using the mean enthalpy difference method. The test run was performed at relative air humidities ranging between 45% and 80%; air inlet temperature ranges of 27, 30, and 33°C; refrigerant-saturated temperatures ranging from 18 to 22°C; and Reynolds numbers between 128 and 166. The results show that the inlet relative humidity, air inlet temperature, and the refrigerant temperature had significant effects on heat transfer performance and air-side pressure drop. The heat transfer coefficient and pressure drop for the micro-channel heat exchanger under wet surface conditions are proposed in terms of the Colburn j factor and Fanning f factor.

High aspect ratio micro tool manufacturing for polymer replication using mu EDM of silicon, selective etching and electroforming

DEFF Research Database (Denmark)

Tosello, Guido; Bissacco, Giuliano; Tang, Peter Torben

2008-01-01

Mass fabrication of polymer micro components with high aspect ratio micro-structures requires high performance micro tools allowing the use of low cost replication processes such as micro injection moulding. In this regard an innovative process chain, based on a combination of micro electrical di...... discharge machining (mu EDM) of a silicon substrate, electroforming and selective etching was used for the manufacturing of a micro tool. The micro tool was employed for polymer replication by means of the injection moulding process....

Quality assurance of the silicon microstrip sensors for the CBM experiment

Energy Technology Data Exchange (ETDEWEB)

Panasenko, Iaroslav [Physikalisches Institut, Universitaet Tuebingen (Germany); Institute for Nuclear Research, Kiev (Ukraine); Larionov, Pavel [University of Frankfurt (Germany); Collaboration: CBM-Collaboration

2016-07-01

The CBM experiment at FAIR will investigate the properties of nuclear matter at extreme conditions created in ultrarelativistic heavy-ion collisions. Its core detector - the Silicon Tracking System (STS) - will determine the momentum of charged particles from beam-target interactions. The track multiplicity will reach up to 700 within the detector aperture covering the polar angle 2.5 and 25 . High track density as well as stringent requirements to the momentum resolution (∝1%) require a system with high channel granularity and low material budget. The STS will be constructed of about 1200 double-sided silicon microstrip sensors with 58 μm pitch and a total area of ∝4 m{sup 2} with all together 2.1 million channels will be read out. In this talk the quality assurance of double-sided silicon microstrip sensors is discussed. This includes both visual and electrical characterization. For this purpose dedicated equipment has been set up in the clean rooms of the GSI Detector Laboratory and at Tuebingen University. Results of the electrical characterization of prototype microstrip sensors CBM06 are presented.

Electron spin resonance and spin-valley physics in a silicon double quantum dot.

Science.gov (United States)

Hao, Xiaojie; Ruskov, Rusko; Xiao, Ming; Tahan, Charles; Jiang, HongWen

2014-05-14

Silicon quantum dots are a leading approach for solid-state quantum bits. However, developing this technology is complicated by the multi-valley nature of silicon. Here we observe transport of individual electrons in a silicon CMOS-based double quantum dot under electron spin resonance. An anticrossing of the driven dot energy levels is observed when the Zeeman and valley splittings coincide. A detected anticrossing splitting of 60 MHz is interpreted as a direct measure of spin and valley mixing, facilitated by spin-orbit interaction in the presence of non-ideal interfaces. A lower bound of spin dephasing time of 63 ns is extracted. We also describe a possible experimental evidence of an unconventional spin-valley blockade, despite the assumption of non-ideal interfaces. This understanding of silicon spin-valley physics should enable better control and read-out techniques for the spin qubits in an all CMOS silicon approach.

Structural and electronic properties of boron-doped double-walled silicon carbide nanotubes

Energy Technology Data Exchange (ETDEWEB)

Behzad, Somayeh, E-mail: somayeh.behzad@gmail.co [Physics Department, Faculty of Science, Razi University, Kermanshah (Iran, Islamic Republic of); Moradian, Rostam [Physics Department, Faculty of Science, Razi University, Kermanshah (Iran, Islamic Republic of); Nano Science and Technology Research Center, Razi University, Kermanshah (Iran, Islamic Republic of); Computational Physical Science Research Laboratory, Department of Nano Science, Institute for Studies in Theoretical Physics and Mathematics (IPM), P.O. Box 19395-5531, Tehran (Iran, Islamic Republic of); Chegel, Raad [Physics Department, Faculty of Science, Razi University, Kermanshah (Iran, Islamic Republic of)

2010-12-01

The effects of boron doping on the structural and electronic properties of (6,0)-(14,0) double-walled silicon carbide nanotube (DWSiCNT) are investigated by using spin-polarized density functional theory. It is found that boron atom could be more easily doped in the inner tube. Our calculations indicate that a Si site is favorable for B under C-rich condition and a C site is favorable under Si-rich condition. Additionally, B-substitution at either single carbon or silicon atom site in DWSiCNT could induce spontaneous magnetization.

Structural and electronic properties of boron-doped double-walled silicon carbide nanotubes

International Nuclear Information System (INIS)

Behzad, Somayeh; Moradian, Rostam; Chegel, Raad

2010-01-01

The effects of boron doping on the structural and electronic properties of (6,0)-(14,0) double-walled silicon carbide nanotube (DWSiCNT) are investigated by using spin-polarized density functional theory. It is found that boron atom could be more easily doped in the inner tube. Our calculations indicate that a Si site is favorable for B under C-rich condition and a C site is favorable under Si-rich condition. Additionally, B-substitution at either single carbon or silicon atom site in DWSiCNT could induce spontaneous magnetization.

Structural and electronic properties of boron-doped double-walled silicon carbide nanotubes

Science.gov (United States)

Behzad, Somayeh; Moradian, Rostam; Chegel, Raad

2010-12-01

The effects of boron doping on the structural and electronic properties of (6,0)@(14,0) double-walled silicon carbide nanotube (DWSiCNT) are investigated by using spin-polarized density functional theory. It is found that boron atom could be more easily doped in the inner tube. Our calculations indicate that a Si site is favorable for B under C-rich condition and a C site is favorable under Si-rich condition. Additionally, B-substitution at either single carbon or silicon atom site in DWSiCNT could induce spontaneous magnetization.

Compact high-efficiency vortex beam emitter based on a silicon photonics micro-ring

DEFF Research Database (Denmark)

Li, Shimao; Ding, Yunhong; Guan, Xiaowei

2018-01-01

Photonic integrated devices that emit vortex beam carrying orbital angular momentum are becoming key components for multiple applications. Here we propose and demonstrate a high-efficiency vortex beam emitter based on a silicon micro-ring resonator integrated with a metal mirror. Such a compact...

Conventional and 360 degree electron tomography of a micro-crystalline silicon solar cell

DEFF Research Database (Denmark)

Duchamp, Martial; Ramar, Amuthan; Kovács, András

2011-01-01

Bright-field (BF) and annular dark-field (ADF) electron tomography in the transmission electron microscope (TEM) are used to characterize elongated porous regions or cracks (simply referred to as cracks thereafter) in micro-crystalline silicon (μc-Si:H) solar cell. The limitations of inferring...

The effect of porosity on energetic porous silicon solid propellant micro-propulsion

International Nuclear Information System (INIS)

Churaman, Wayne A; Morris, Christopher J; Ramachandran, Raghav; Bergbreiter, Sarah

2015-01-01

Energetic porous silicon is investigated as an actuator for micro-propulsion based on thrust and impulse measurements for a variety of porous silicon porosity conditions. Porosity of 2 mm diameter, porous silicon microthruster devices was varied by changing the concentration of hydrofluoric acid and ethanol in an etch solution, by changing porous silicon etch depth, and by changing the resistivity of silicon wafers used for the etch process. The porosity varied from 30% to 75% for these experiments. The highest mean thrust and impulse values measured with a calibrated Kistler 9215 force sensor were 674 mN and 271 μN s, respectively, with a 73% porosity, 2 mm diameter porous silicon device etched in a 3 : 1 etch solution on a 3.6 Ω cm wafer to a target etch depth of 30 μm. As a result of changing porosity, a 23×  increase in thrust performance and a 36×  increase in impulse performance was demonstrated. Impulse values were also validated using a pendulum experiment in which the porous silicon microthruster was unconstrained, but several non-linearities in the pendulum experimental setup resulted in less consistent data than when measured by the force sensor for microthrusters at this size scale. These thrust and impulse results complement previous work in determining the effect of porosity on other porous silicon reaction metrics such as flame speed. (paper)

Design and fabrication process of silicon micro-calorimeters on simple SOI technology for X-ray spectral imaging

International Nuclear Information System (INIS)

Aliane, A.; Agnese, P.; Pigot, C.; Sauvageot, J.-L.; Moro, F. de; Ribot, H.; Gasse, A.; Szeflinski, V.; Gobil, Y.

2008-01-01

Several successful development programs have been conducted on infra-red bolometer arrays at the 'Commissariat a l'Energie Atomique' (CEA-LETI Grenoble) in collaboration with the CEA-SAp (Saclay); taking advantage of this background, we are now developing an X-ray spectro-imaging camera for next generation space astronomy missions, using silicon only technology. We have developed monolithic silicon micro-calorimeters based on implanted thermistors in an improved array that could be used for future space missions. The 8x8 array consists of a grid of 64 suspended pixels fabricated on a silicon on insulator (SOI) wafer. Each pixel of this detector array is made of a tantalum (Ta) absorber, which is bound by means of indium bump hybridization, to a silicon thermistor. The absorber array is bound to the thermistor array in a collective process. The fabrication process of our detector involves a combination of standard technologies and silicon bulk micro-machining techniques, based on deposition, photolithography and plasma etching steps. Finally, we present the results of measurements performed on these four primary building blocks that are required to create a detector array up to 32x32 pixels in size

Scintigraphic diagnosis of silent aspiration following double-sided lung transplantation

International Nuclear Information System (INIS)

Toenshoff, G.; Stock, U.; Bohuslavizki, K.H.; Brenner, W.; Costard-Jaeckle, A.; Cremer, J.; Clausen, M.

1996-01-01

We present a case of a 25 year old patient who underwent double-sided lung transplantation and suffered from recurrent pneumonia. Silent aspiration was suspected clinically. Aspiration was proved by scintigraphy enabling to discriminate between direct oro-pulmonal aspiration and aspiration after gastro-esophageal reflux. (orig.) [de

Signals from fluorescent materials on the surface of silicon micro-strip sensors

CERN Document Server

Sperlich, Dennis; The ATLAS collaboration

2018-01-01

For the High-Luminosity Upgrade of the Large Hadron Collider at CERN, the ATLAS Inner Detector will be replaced with a new, all-silicon tracker (ITk). In order to minimise the amount of material in the ITk, circuit boards with readout electronics will be glued onto the active area of the sensor. Several adhesives, investigated to be used for the construction of detector modules, were found to become fluorescent when exposed to UV light. These adhesives could become a light source in the high-radiation environment of the ATLAS detector. The effect of fluorescent material covering the sensor surface in a high-radiation environment has been studied for a silicon micro-strip sensor using a micro-focused X-ray beam. By positioning the beam parallel to the sensor surfave and pointing it both inside the sensor and above the sensor surface inside the deposited glue, the sensor responses from direct hits and fluorescence can be compared with high precision. This contribution presents a setup to study the susceptibilit...

Preparation of composite micro/nano structure on the silicon surface by reactive ion etching: Enhanced anti-reflective and hydrophobic properties

Science.gov (United States)

Zeng, Yu; Fan, Xiaoli; Chen, Jiajia; He, Siyu; Yi, Zao; Ye, Xin; Yi, Yougen

2018-05-01

A silicon substrate with micro-pyramid structure (black silicon) is prepared by wet chemical etching and then subjected to reactive ion etching (RIE) in the mixed gas condition of SF6, CHF3 and He. We systematically study the impacts of flow rates of SF6, CHF3 and He, the etching pressure and the etching time on the surface morphology and reflectivity through various characterizations. Meanwhile, we explore and obtain the optimal combination of parameters for the preparation of composite structure that match the RIE process based on the basis of micro-pyramid silicon substrate. The composite sample prepared under the optimum parameters exhibits excellent anti-reflective performance, hydrophobic, self-cleaning and anti-corrosive properties. Based on the above characteristics, the composite micro/nano structure can be applied to solar cells, photodetectors, LEDs, outdoor devices and other important fields.

Pull-in instability of paddle-type and double-sided NEMS sensors under the accelerating force

Science.gov (United States)

Keivani, M.; Khorsandi, J.; Mokhtari, J.; Kanani, A.; Abadian, N.; Abadyan, M.

2016-02-01

Paddle-type and double-sided nanostructures are potential for use as accelerometers in flying vehicles and aerospace applications. Herein the pull-in instability of the cantilever paddle-type and double-sided sensors in the Casimir regime are investigated under the acceleration. The D'Alembert principle is employed to transform the accelerating system into an equivalent static system by incorporating the accelerating force. Based on the couple stress theory (CST), the size-dependent constitutive equations of the sensors are derived. The governing nonlinear equations are solved by two approaches, i.e. modified variational iteration method and finite difference method. The influences of the Casimir force, geometrical parameters, acceleration and the size phenomenon on the instability performance have been demonstrated. The obtained results are beneficial to design and fabricate paddle-type and double-sided accelerometers.

Double-sided anodic titania nanotube arrays: a lopsided growth process.

Science.gov (United States)

Sun, Lidong; Zhang, Sam; Sun, Xiao Wei; Wang, Xiaoyan; Cai, Yanli

2010-12-07

In the past decade, the pore diameter of anodic titania nanotubes was reported to be influenced by a number of factors in organic electrolyte, for example, applied potential, working distance, water content, and temperature. All these were closely related to potential drop in the organic electrolyte. In this work, the essential role of electric field originating from the potential drop was directly revealed for the first time using a simple two-electrode anodizing method. Anodic titania nanotube arrays were grown simultaneously at both sides of a titanium foil, with tube length being longer at the front side than that at the back side. This lopsided growth was attributed to the higher ionic flux induced by electric field at the front side. Accordingly, the nanotube length was further tailored to be comparable at both sides by modulating the electric field. These results are promising to be used in parallel configuration dye-sensitized solar cells, water splitting, and gas sensors, as a result of high surface area produced by the double-sided architecture.

Double muscle innervation using end-to-side neurorrhaphy in rats

Directory of Open Access Journals (Sweden)

Elisangela Jeronymo Stipp-Brambilla

Full Text Available CONTEXT AND OBJECTIVE: One of the techniques used for treating facial paralysis is double muscle innervation using end-to-end neurorrhaphy with sectioning of healthy nerves. The aim of this study was to evaluate whether double muscle innervation by means of end-to-side neurorrhaphy could occur, with maintenance of muscle innervation. DESIGN AND SETTING: Experimental study developed at the Experimental Research Center, Faculdade de Medicina de Botucatu, Unesp. METHODS: One hundred rats were allocated to five groups as follows: G1, control group; G2, the peroneal nerve was sectioned; G3, the tibial nerve was transected and the proximal stump was end-to-side sutured to the intact peroneal nerve; G4, 120 days after the G3 surgery, the peroneal nerve was sectioned proximally to the neurorrhaphy; G5, 120 days after the G3 surgery, the peroneal and tibial nerves were sectioned proximally to the neurorrhaphy. RESULTS: One hundred and fifty days after the surgery, G3 did not show any change in tibial muscle weight or muscle fiber diameter, but the axonal fiber diameter in the peroneal nerve distal to the neurorrhaphy had decreased. Although G4 showed atrophy of the cranial tibial muscle 30 days after sectioning the peroneal nerve, the electrophysiological test results and axonal diameter measurement confirmed that muscle reinnervation had occurred. CONCLUSION: These findings suggest that double muscle innervation did not occur through end-to-side neurorrhaphy; the tibial nerve was not able to maintain muscle innervation after the peroneal nerve had been sectioned, although muscle reinnervation was found to have occurred, 30 days after the peroneal nerve had been sectioned.

Experimental characterization of a silicone oil-in-water droplet generator based on a micro T-junction

Science.gov (United States)

Rostami, B.; Pulvirenti, B.; Puccetti, G.; Morini, G. L.

2017-01-01

This paper deals with the emulsion of two immiscible fluids in a micro T-junction. An opposed-flow micro T-junction obtained by means of square microchannels (with a side of 300 µm) fabricated in a pure fused glass chip has been used for the formation of silicone oil-in-water (O/W) droplets. The experimental results have been obtained by considering both pure deionized water and a mixture of deionized water and surfactant (Tween 20) as the continuous flow. The results shown in this paper highlight that the presence of surfactant, also in very small concentrations, is able to change drastically the flow patterns of the two-phase flow generated by the T-junction. Concentration in weight of Tween 20 between 1 and 2% in the continuous flow is able to promote highly monodispersed emulsions with low polydispersity, especially for low flow rate ratios between the dispersed and continuous phase flows. On the contrary, by avoiding the use of surfactant, a stratified flow is obtained. The experimental results obtained in this work have been used in order to link the depth ratio of the stratified flow and the non-dimensional length of the plugs in droplet-based flow to the flow rate ratio between the dispersed and continuous flows.

Analysis of Side-Wall Structure of Grown-in Twin-Type Octahedral Defects in Czochralski Silicon

Science.gov (United States)

Ueki, Takemi; Itsumi, Manabu; Takeda, Tadao

1998-04-01

We analyzed the side-wall structure of grown-in octahedral defects in Czochralski silicon standard wafers for large-scale integrated circuits. There are two types of twin octahedral defects: an overlapping type and an adjacent type. In the twin octahedral defects of the overlapping type, a hole is formed in the connection part. The side-wall layer in the hole part is formed continually and is the same thickness as the side-wall layers of both octahedrons. In the twin octahedral defects of the adjacent type, a partition layer is formed in the connection part. Our electron energy-loss spectroscopy analyses identified that the side-wall layer includes SiO2.

Displacement and resonance behaviors of a piezoelectric diaphragm driven by a double-sided spiral electrode

KAUST Repository

Shen, Zhiyuan

2012-04-03

This paper presents the design of a lead zirconate titanate (PZT) diaphragm actuated by double-sided patterned electrodes. Au/Cr electrodes were deposited on bulk PZT wafers by sputtering while patterned by a lift-off process. SU-8 thick film was used to form the structural layer. Double-spiral electrode induced in-plane poling and piezoelectric elongation are converted to an out-of-plane displacement due to the confined boundary condition. The influence of different drive configurations and electrode parameters on deflection has been calculated by finite element methods (FEM) using a uniform field model. Impedance and quasi-static displacement spectra of the diaphragm were measured after poling. Adouble-sided patterned electrode diaphragm can be actuated by more drive configurations than a single-sided one. Compared with a single-sided electrode drive, a double-sided out-of-phase drive configuration increases the coupling coefficient of the fundamental resonance from 7.6% to 11.8%. The displacement response of the diaphragm increases from 2.6 to 8.6nmV 1. Configurations including the electric field component perpendicular to the poling direction can stimulate shear modes of the diaphragm. © 2012 IOP Publishing Ltd.

Micro-cutting of silicon implanted with hydrogen and post-implantation thermal treatment

Science.gov (United States)

Jelenković, Emil V.; To, Suet; Sundaravel, B.; Xiao, Gaobo; Huang, Hu

2016-07-01

It was reported that non-amorphizing implantation by hydrogen has a potential in improving silicon machining. Post-implantation high-temperature treatment will affect implantation-induced damage, which can have impact on silicon machining. In this article, a relation of a thermal annealing of hydrogen implanted in silicon to micro-cutting experiment is investigated. Hydrogen ions were implanted into 4″ silicon wafers with 175 keV, 150 keV, 125 keV and doses of 2 × 1016 cm-2, 2 × 1016 cm-2 and 3 × 1016 cm-2, respectively. In this way, low hydrogen atom-low defect concentration was created in the region less than ~0.8 μm deep and high hydrogen atom-high defect concentration was obtained at silicon depth of ~0.8-1.5 μm. The post-implantation annealing was carried out at 300 and 400 °C in nitrogen for 1 h. Physical and electrical properties of implanted and annealed samples were characterized by secondary ion mass spectroscopy (SIMS), X-ray diffraction (XRD), Rutherford backscattering (RBS) and nanoindentation. Plunge cutting experiment was carried out in and silicon crystal direction. The critical depth of cut and cutting force were monitored and found to be influenced by the annealing. The limits of hydrogen implantation annealing contribution to the cutting characteristics of silicon are discussed in light of implantation process and redistribution of hydrogen and defects generation during annealing process.

Nanowire-integrated microporous silicon membrane for continuous fluid transport in micro cooling device

International Nuclear Information System (INIS)

So, Hongyun; Pisano, Albert P.; Cheng, Jim C.

2013-01-01

We report an efficient passive micro pump system combining the physical properties of nanowires and micropores. This nanowire-integrated microporous silicon membrane was created to feed coolant continuously onto the surface of the wick in a micro cooling device to ensure it remains hydrated and in case of dryout, allow for regeneration of the system. The membrane was fabricated by photoelectrochemical etching to form micropores followed by hydrothermal growth of nanowires. This study shows a promising approach to address thermal management challenges for next generation electronic devices with absence of external power

Static and dynamic characterization of robust superhydrophobic surfaces built from nano-flowers on silicon micro-post arrays

KAUST Repository

Chen, Longquan

2010-09-01

Superhydrophobic nano-flower surfaces were fabricated using MEMS technology and microwave plasma-enhanced chemical vapor deposition (MPCVD) of carbon nanotubes on silicon micro-post array surfaces. The nano-flower structures can be readily formed within 1-2 min on the micro-post arrays with the spacing ranging from 25 to 30 μm. The petals of the nano-flowers consisted of clusters of multi-wall carbon nanotubes. Patterned nano-flower structures were characterized using various microscopy techniques. After MPCVD, the apparent contact angle (160 ± 0.2°), abbreviated as ACA (defined as the measured angle between the apparent solid surface and the tangent to the liquid-fluid interface), of the nano-flower surfaces increased by 139% compared with that of the silicon micro-post arrays. The measured ACA of the nano-flower surface is consistent with the predicted ACA from a modified Cassie-Baxter equation. A high-speed CCD camera was used to study droplet impact dynamics on various micro/nanostructured surfaces. Both static testing (ACA and sliding angle) and droplet impact dynamics demonstrated that, among seven different micro/nanostructured surfaces, the nano-flower surfaces are the most robust superhydrophobic surfaces. © 2010 IOP Publishing Ltd.

Static and dynamic characterization of robust superhydrophobic surfaces built from nano-flowers on silicon micro-post arrays

KAUST Repository

Chen, Longquan; Xiao, Zhiyong; Chan, Philip C H; Lee, Yi-Kuen

2010-01-01

Superhydrophobic nano-flower surfaces were fabricated using MEMS technology and microwave plasma-enhanced chemical vapor deposition (MPCVD) of carbon nanotubes on silicon micro-post array surfaces. The nano-flower structures can be readily formed within 1-2 min on the micro-post arrays with the spacing ranging from 25 to 30 μm. The petals of the nano-flowers consisted of clusters of multi-wall carbon nanotubes. Patterned nano-flower structures were characterized using various microscopy techniques. After MPCVD, the apparent contact angle (160 ± 0.2°), abbreviated as ACA (defined as the measured angle between the apparent solid surface and the tangent to the liquid-fluid interface), of the nano-flower surfaces increased by 139% compared with that of the silicon micro-post arrays. The measured ACA of the nano-flower surface is consistent with the predicted ACA from a modified Cassie-Baxter equation. A high-speed CCD camera was used to study droplet impact dynamics on various micro/nanostructured surfaces. Both static testing (ACA and sliding angle) and droplet impact dynamics demonstrated that, among seven different micro/nanostructured surfaces, the nano-flower surfaces are the most robust superhydrophobic surfaces. © 2010 IOP Publishing Ltd.

Silicon-Rich Silicon Carbide Hole-Selective Rear Contacts for Crystalline-Silicon-Based Solar Cells.

Science.gov (United States)

Nogay, Gizem; Stuckelberger, Josua; Wyss, Philippe; Jeangros, Quentin; Allebé, Christophe; Niquille, Xavier; Debrot, Fabien; Despeisse, Matthieu; Haug, Franz-Josef; Löper, Philipp; Ballif, Christophe

2016-12-28

The use of passivating contacts compatible with typical homojunction thermal processes is one of the most promising approaches to realizing high-efficiency silicon solar cells. In this work, we investigate an alternative rear-passivating contact targeting facile implementation to industrial p-type solar cells. The contact structure consists of a chemically grown thin silicon oxide layer, which is capped with a boron-doped silicon-rich silicon carbide [SiC x (p)] layer and then annealed at 800-900 °C. Transmission electron microscopy reveals that the thin chemical oxide layer disappears upon thermal annealing up to 900 °C, leading to degraded surface passivation. We interpret this in terms of a chemical reaction between carbon atoms in the SiC x (p) layer and the adjacent chemical oxide layer. To prevent this reaction, an intrinsic silicon interlayer was introduced between the chemical oxide and the SiC x (p) layer. We show that this intrinsic silicon interlayer is beneficial for surface passivation. Optimized passivation is obtained with a 10-nm-thick intrinsic silicon interlayer, yielding an emitter saturation current density of 17 fA cm -2 on p-type wafers, which translates into an implied open-circuit voltage of 708 mV. The potential of the developed contact at the rear side is further investigated by realizing a proof-of-concept hybrid solar cell, featuring a heterojunction front-side contact made of intrinsic amorphous silicon and phosphorus-doped amorphous silicon. Even though the presented cells are limited by front-side reflection and front-side parasitic absorption, the obtained cell with a V oc of 694.7 mV, a FF of 79.1%, and an efficiency of 20.44% demonstrates the potential of the p + /p-wafer full-side-passivated rear-side scheme shown here.

Development of carbon fiber staves for the strip part of the PANDA micro vertex detector

Energy Technology Data Exchange (ETDEWEB)

Quagli, Tommaso; Brinkmann, Kai-Thomas [II. Physikalisches Institut, Justus-Liebig Universitaet Giessen (Germany); Fracassi, Vincenzo; Grunwald, Dirk; Rosenthal, Eberhard [ZEA-1, Forschungszentrum Juelich GmbH, Juelich (Germany); Collaboration: PANDA-Collaboration

2015-07-01

PANDA is a key experiment of the future FAIR facility, under construction in Darmstadt, Germany. It will study the collisions between an antiproton beam and a fixed proton or nuclear target. The Micro Vertex Detector (MVD) is the innermost detector of the apparatus and is composed of four concentric barrels and six forward disks, instrumented with silicon hybrid pixel detectors and double-sided silicon microstrip detectors; its main task is the identification of primary and secondary vertices. The central requirements include high spatial and time resolution, trigger-less readout with high rate capability, good radiation tolerance and low material budget. Because of the compact layout of the system, its integration poses significant challenges. The detectors in the strip barrels will be supported by a composite structure of carbon fiber and carbon foam; a water-based cooling system embedded in the mechanical supports will be used to remove the excess heat from the readout electronics. In this contribution the design of the barrel stave and the ongoing development of some hardware components related to its integration will be presented.

Development of innovative silicon radiation detectors

CERN Document Server

Balbuena, JuanPablo

Silicon radiation detectors fabricated at the IMB-CNM (CSIC) Clean Room facilities using the most innovative techniques in detector technology are presented in this thesis. TCAD simulation comprises an important part in this work as becomes an essential tool to achieve exhaustive performance information of modelled detectors prior their fabrication and subsequent electrical characterization. Radiation tolerance is also investigated in this work using TCAD simulations through the potential and electric field distributions, leakage current and capacitance characteristics and the response of the detectors to the pass of different particles for charge collection efficiencies. Silicon detectors investigated in this thesis were developed for specific projects but also for applications in experiments which can benefit from their improved characteristics, as described in Chapter 1. Double-sided double type columns 3D (3D-DDTC) detectors have been developed under the NEWATLASPIXEL project in the framework of the CERN ...

The Laser MicroJet (LMJ): a multi-solution technology for high quality micro-machining

Science.gov (United States)

Mai, Tuan Anh; Richerzhagen, Bernold; Snowdon, Paul C.; Wood, David; Maropoulos, Paul G.

2007-02-01

The field of laser micromachining is highly diverse. There are many different types of lasers available in the market. Due to their differences in irradiating wavelength, output power and pulse characteristic they can be selected for different applications depending on material and feature size [1]. The main issues by using these lasers are heat damages, contamination and low ablation rates. This report examines on the application of the Laser MicroJet(R) (LMJ), a unique combination of a laser beam with a hair-thin water jet as a universal tool for micro-machining of MEMS substrates, as well as ferrous and non-ferrous materials. The materials include gallium arsenide (GaAs) & silicon wafers, steel, tantalum and alumina ceramic. A Nd:YAG laser operating at 1064 nm (infra red) and frequency doubled 532 nm (green) were employed for the micro-machining of these materials.

Numerical analysis of urine flow through the side holes of a double J stent in a ureteral stenosis.

Science.gov (United States)

Kim, Hyoung-Ho; Choi, Young Ho; Lee, Seung Bae; Baba, Yasutaka; Kim, Kyung-Wuk; Suh, Sang-Ho

2017-07-20

Ureteral stenosis presents with a narrowing in the ureter, due to an intrinsic or extrinsic ureteral disease, such as ureter cancer or retroperitoneal fibrosis. The placement of a double J stent in the upper urinary system is one of the most common treatments of ureteral stenosis, along with the insertion of a percutaneous nephrostomy tube into the renal pelvis. The effect that the side holes in a double J stent have on urine flow has been evaluated in a few studies using straight ureter models. In this study, urine flow through a double J stent's side holes was analyzed in curved ureter models, which were based on human anatomy. In ureteral stenosis, especially in severe ureteral stenosis, a stent with side holes had a positive effect on the luminal and total flow rates, compared with the rates for a stent without side holes. The more side holes a stent has, the greater the luminal and total flow rates. However, the angular positions of the side holes did not affect flow rate. In conclusion, the side holes in a double J stent had a positive effect on ureteral stenosis, and the effect became greater as the ureteral stenosis became more severe.

Anti-sticking behavior of DLC-coated silicon micro-molds

International Nuclear Information System (INIS)

Saha, B; Tor, S B; Liu, E; Khun, N W; Hardt, D E; Chun, J H

2009-01-01

Pure carbon- (C), nitrogen- (N) and titanium- (Ti) doped diamond-like carbon (DLC) coatings were deposited on silicon (Si) micro-molds by dc magnetron sputtering deposition to improve the tribological performance of the micro-molds. The coated and uncoated Si molds were used in injection molding for the fabrication of secondary metal-molds, which were used for the replication of micro-fluidic devices. The bonding structure, surface roughness, surface energy, critical load and friction coefficient of the DLC coatings were characterized with micro-Raman spectroscopy, atomic force microscopy (AFM), contact angle, microscratch and ball-on-disc sliding wear tests, respectively. It was observed that the doping conditions had significant effects on Raman peak positions, mechanical and tribological properties of the coatings. The G peak shifted toward a lower position with N and Ti doping. The DLC coating deposited with 1 sccm N 2 flow rate showed the lowest G peak position and the smoothest surface. The surface energies of the pure carbon and Ti-doped DLC coatings were lower than that of the N-doped DLC, which was more significant at a higher N 2 flow rate. In terms of adhesion and friction coefficient, it was observed that the Ti-doped DLC coating had the best performance. Ti incorporated in the DLC coating decreased the residual stress of the coating, which improved the adhesive strength of the coating with the Si substrate

The micro vertex detector for the anti PANDA experiment

Energy Technology Data Exchange (ETDEWEB)

Esch, Simone [Forschungszentrum Juelich (Germany); Collaboration: PANDA-Collaboration

2015-07-01

The anti PANDA detector is one of the main experiments at the upcoming Facility for Antiproton and Ion Research (FAIR), which is under construction in Darmstadt, Germany. The fixed-target experiment will explore anti pp annihilations with intense, phase space-cooled beams with momenta between 1.5 and 15 GeV/c. One aim of the detector is to perform high precision measurements of particles like excited charmonium and D mesons. Essential for background suppression is the tagging of D mesons by measuring their decay point. Therefore, a Micro Vertex Detector (MVD) is planned at anti PANDA as the innermost tracking detector. The MVD aims to reconstruct vertices with a resolution better than 100 μm to cope with the decay length of the D{sup ±} mesons (cτ=315 μm) produced with a mean βγ=2. The detector consists of silicon pixel and double-sided silicon strip detectors, arranged in four barrel layers and six disk layers. An overview of the MVD is given in this talk. Recent developments like laboratory and testbeam results of the current pixel front-end ASIC prototype ToPix 4 are shown. The concept of the newly developed strip front-end ASIC PASTA is presented.

Quantifying shape changes of silicone breast implants in a murine model using in vivo micro-CT.

Science.gov (United States)

Anderson, Emily E; Perilli, Egon; Carati, Colin J; Reynolds, Karen J

2017-08-01

A major complication of silicone breast implants is the formation of a capsule around the implant known as capsular contracture which results in the distortion of the implant. Recently, a mouse model for studying capsular contracture was examined using micro-computed tomography (micro-CT), however, only qualitative changes were reported. The aim of this study was to develop a quantitative method for comparing the shape changes of silicone implants using in vivo micro-CT. Mice were bilaterally implanted with silicone implants and underwent ionizing radiation to induce capsular contracture. On day 28 post-surgery mice were examined in vivo using micro-CT. The reconstructed cross-section images were visually inspected to identify distortion. Measurements were taken in 2D and 3D to quantify the shape of the implants in the normal (n = 11) and distorted (n = 5) groups. The degree of anisotropy was significantly higher in the distorted implants in the transaxial view (0.99 vs. 1.19, p = 0.002) and the y-axis lengths were significantly shorter in the sagittal (9.27 mm vs. 8.55 mm, p = 0.015) and coronal (9.24 mm vs. 8.76 mm, p = 0.031) views, indicating a deviation from the circular cross-section and shortening of the long axis. The 3D analysis revealed a significantly lower average thickness (sphere-fitting method) in distorted implants (6.86 mm vs. 5.49 mm, p = 0.002), whereas the volume and surface area did not show significant changes. Statistically significant differences between normal and distorted implants were found in 2D and 3D using distance measurements performed via micro-CT. This objective analysis method can be useful for a range of studies involving deformable implants using in vivo micro-CT. © 2016 Wiley Periodicals, Inc. J Biomed Mater Res Part B: Appl Biomater, 105B: 1447-1452, 2017. © 2016 Wiley Periodicals, Inc.

Material Properties of Laser-Welded Thin Silicon Foils

Directory of Open Access Journals (Sweden)

M. T. Hessmann

2013-01-01

Full Text Available An extended monocrystalline silicon base foil offers a great opportunity to combine low-cost production with high efficiency silicon solar cells on a large scale. By overcoming the area restriction of ingot-based monocrystalline silicon wafer production, costs could be decreased to thin film solar cell range. The extended monocrystalline silicon base foil consists of several individual thin silicon wafers which are welded together. A comparison of three different approaches to weld 50 μm thin silicon foils is investigated here: (1 laser spot welding with low constant feed speed, (2 laser line welding, and (3 keyhole welding. Cross-sections are prepared and analyzed by electron backscatter diffraction (EBSD to reveal changes in the crystal structure at the welding side after laser irradiation. The treatment leads to the appearance of new grains and boundaries. The induced internal stress, using the three different laser welding processes, was investigated by micro-Raman analysis. We conclude that the keyhole welding process is the most favorable to produce thin silicon foils.

Development of radiation hard microstrip detectors for the CBM silicon tracking system

Energy Technology Data Exchange (ETDEWEB)

Chatterji, Sudeep [GSI, Darmstadt (Germany)

2010-07-01

Radiation damage in Silicon microstrip detectors is of the one main concerns for the development of the Silicon Tracking System (STS) in the planned Compressed Baryonic Matter (CBM) experiment at FAIR. The STS will consist of Double Sided Silicon Strip Detectors (DSSD) having pitch around 60 {mu}m, width 20 {mu}m, stereo angle of {+-}7.5{sup 0} on n and p sides with double metallization on either side making it challenging to fabricate.We are using 3-dimensional TCAD simulation tools from SYNOPSYS to carry out process (using Sentaurus Process) and device (using Sentaurus Device) simulations.We have simulated the impact of radiation damage in DSSDs by changing the effective carrier concentration (N{sub eff}) with fluence using the Hamburg model. The change in minority carrier life time has been taken into account using the Kraners model and the Perugia trap model has been used to simulate the traps. We have also extracted macroscopic parameters like Coupling Capacitance, Interstrip Capacitance (both DC and AC), Interstrip Resistance of DSSDs using Mixed Mode simulation (using SPICE with Sentaurus Device) and studied the variation of these parameters with fluence. The simulation results have been compared to the experimental results. We also simulated transients by passing a Heavy Ion through a DSSD and studied the charge collection performance.

An all-silicone zoom lens in an optical imaging system

Science.gov (United States)

Zhao, Cun-Hua

2013-09-01

An all-silicone zoom lens is fabricated. A tunable metal ringer is fettered around the side edge of the lens. A nylon rope linking a motor is tied, encircling the notch in the metal ringer. While the motor is operating, the rope can shrink or release to change the focal length of the lens. A calculation method is developed to obtain the focal length and the zoom ratio. The testing is carried out in succession. The testing values are compared with the calculated ones, and they tally with each other well. Finally, the imaging performance of the all-silicone lens is demonstrated. The all-silicone lens has potential uses in cellphone cameras, notebook cameras, micro monitor lenses, etc.

Micromachined silicon acoustic delay line with 3D-printed micro linkers and tapered input for improved structural stability and acoustic directivity

International Nuclear Information System (INIS)

Cho, Y; Kumar, A; Xu, S; Zou, J

2016-01-01

Recent studies have shown that micromachined silicon acoustic delay lines can provide a promising solution to achieve real-time photoacoustic tomography without the need for complex transducer arrays and data acquisition electronics. To achieve deeper imaging depth and wider field of view, a longer delay time and therefore delay length are required. However, as the length of the delay line increases, it becomes more vulnerable to structural instability due to reduced mechanical stiffness. In this paper, we report the design, fabrication, and testing of a new silicon acoustic delay line enhanced with 3D printed polymer micro linker structures. First, mechanical deformation of the silicon acoustic delay line (with and without linker structures) under gravity was simulated by using finite element method. Second, the acoustic crosstalk and acoustic attenuation caused by the polymer micro linker structures were evaluated with both numerical simulation and ultrasound transmission testing. The result shows that the use of the polymer micro linker structures significantly improves the structural stability of the silicon acoustic delay lines without creating additional acoustic attenuation and crosstalk. In addition, the improvement of the acoustic acceptance angle of the silicon acoustic delay lines was also investigated to better suppress the reception of unwanted ultrasound signals outside of the imaging plane. These two improvements are expected to provide an effective solution to eliminate current limitations on the achievable acoustic delay time and out-of-plane imaging resolution of micromachined silicon acoustic delay line arrays. (paper)

Beam test of CSES silicon strip detector module

Science.gov (United States)

Zhang, Da-Li; Lu, Hong; Wang, Huan-Yu; Li, Xin-Qiao; Xu, Yan-Bing; An, Zheng-Hua; Yu, Xiao-xia; Wang, Hui; Shi, Feng; Wang, Ping; Zhao, Xiao-Yun

2017-05-01

The silicon-strip tracker of the China Seismo-Electromagnetic Satellite (CSES) consists of two double-sided silicon strip detectors (DSSDs) which provide incident particle tracking information. A low-noise analog ASIC VA140 was used in this study for DSSD signal readout. A beam test on the DSSD module was performed at the Beijing Test Beam Facility of the Beijing Electron Positron Collider (BEPC) using a 400-800 MeV/c proton beam. The pedestal analysis results, RMSE noise, gain correction, and intensity distribution of incident particles of the DSSD module are presented. Supported by the XXX Civil Space Programme

A facile electrode preparation method for accurate electrochemical measurements of double-side-coated electrode from commercial Li-ion batteries

Science.gov (United States)

Zhou, Ge; Wang, Qiyu; Wang, Shuo; Ling, Shigang; Zheng, Jieyun; Yu, Xiqian; Li, Hong

2018-04-01

The post mortem electrochemical analysis, including charge-discharge and electrochemical impedance spectroscopy (EIS) measurements, are critical steps for revealing the failure mechanisms of commercial lithium-ion batteries (LIBs). These post measurements usually require the reassembling of coin-cell with electrode which is often double-side-coated in commercial LIBs. It is difficult to use such double-side-coated electrode to perform accurate electrochemical measurements because the back side of the electrode is coated with active materials, rather than single-side-coated electrode that is often used in coin-cell measurements. In this study, we report a facile tape-covering sample preparation method, which can effectively suppress the influence of back side of the double-side-coated electrodes on capacity and EIS measurements in coin-cells. By tape-covering the unwanted side, the areal capacity of the desired investigated side of the electrode has been accurately measured with an experimental error of about 0.5% at various current densities, and accurate EIS measurements and analysis have been conducted as well.

Tracking with heavily irradiated silicon detectors operated at cryogenic temperatures

International Nuclear Information System (INIS)

Casagrande, L.; Barnett, B.M.; Bartalina, P.

1999-01-01

In this work, the authors show that a heavily irradiated double-sided silicon microstrip detector recovers its performance when operated at cryogenic temperatures. A DELPHI microstrip detector, irradiated to a fluence of ∼4 x 10 14 p/cm 2 , no longer operational at room temperature, cannot be distinguished from a non-irradiated one when operated at T < 120 K. Besides confirming the previously observed Lazarus effect in single diodes, these results establish, for the first time, the possibility of using standard silicon detectors for tracking applications in extremely demanding radiation environments

Dual-side and three-dimensional microelectrode arrays fabricated from ultra-thin silicon substrates

International Nuclear Information System (INIS)

Du, Jiangang; Masmanidis, Sotiris C; Roukes, Michael L

2009-01-01

A method for fabricating planar implantable microelectrode arrays was demonstrated using a process that relied on ultra-thin silicon substrates, which ranged in thickness from 25 to 50 µm. The challenge of handling these fragile materials was met via a temporary substrate support mechanism. In order to compensate for putative electrical shielding of extracellular neuronal fields, separately addressable electrode arrays were defined on each side of the silicon device. Deep reactive ion etching was employed to create sharp implantable shafts with lengths of up to 5 mm. The devices were flip-chip bonded onto printed circuit boards (PCBs) by means of an anisotropic conductive adhesive film. This scalable assembly technique enabled three-dimensional (3D) integration through formation of stacks of multiple silicon and PCB layers. Simulations and measurements of microelectrode noise appear to suggest that low impedance surfaces, which could be formed by electrodeposition of gold or other materials, are required to ensure an optimal signal-to-noise ratio as well a low level of interchannel crosstalk

Stable cycling of double-walled silicon nanotube battery anodes through solid–electrolyte interphase control

KAUST Repository

Wu, Hui

2012-03-25

Although the performance of lithium ion-batteries continues to improve, their energy density and cycle life remain insufficient for applications in consumer electronics, transport and large-scale renewable energy storage 1-5. Silicon has a large charge storage capacity and this makes it an attractive anode material, but pulverization during cycling and an unstable solid-electrolyte interphase has limited the cycle life of silicon anodes to hundreds of cycles 6-11. Here, we show that anodes consisting of an active silicon nanotube surrounded by an ion-permeable silicon oxide shell can cycle over 6,000 times in half cells while retaining more than 85% of their initial capacity. The outer surface of the silicon nanotube is prevented from expansion by the oxide shell, and the expanding inner surface is not exposed to the electrolyte, resulting in a stable solid-electrolyte interphase. Batteries containing these double-walled silicon nanotube anodes exhibit charge capacities approximately eight times larger than conventional carbon anodes and charging rates of up to 20C (a rate of 1C corresponds to complete charge or discharge in one hour). © 2012 Macmillan Publishers Limited. All rights reserved.

A Silicon SPECT System for Molecular Imaging of the Mouse Brain

OpenAIRE

Shokouhi, Sepideh; Fritz, Mark A.; McDonald, Benjamin S.; Durko, Heather L.; Furenlid, Lars R.; Wilson, Donald W.; Peterson, Todd E.

2007-01-01

We previously demonstrated the feasibility of using silicon double-sided strip detectors (DSSDs) for SPECT imaging of the activity distribution of iodine-125 using a 300-micrometer thick detector. Based on this experience, we now have developed fully customized silicon DSSDs and associated readout electronics with the intent of developing a multi-pinhole SPECT system. Each DSSD has a 60.4 mm × 60.4 mm active area and is 1 mm thick. The strip pitch is 59 micrometers, and the readout of the 102...

SVX II a silicon vertex detector for run II of the tevatron

International Nuclear Information System (INIS)

Bortoletto, D.

1994-11-01

A microstrip silicon detector SVX II has been proposed for the upgrade of the vertex detector of the CDF experiment to be installed for run II of the Tevatron in 1998. Three barrels of four layers of double sided detectors will cover the interaction region. The requirement of the silicon tracker and the specification of the sensors are discussed together with the proposed R ampersand D to verify the performance of the prototypes detectors produced by Sintef, Micron and Hamamatsu

Barbed micro-spikes for micro-scale biopsy

Science.gov (United States)

Byun, Sangwon; Lim, Jung-Min; Paik, Seung-Joon; Lee, Ahra; Koo, Kyo-in; Park, Sunkil; Park, Jaehong; Choi, Byoung-Doo; Seo, Jong Mo; Kim, Kyung-ah; Chung, Hum; Song, Si Young; Jeon, Doyoung; Cho, Dongil

2005-06-01

Single-crystal silicon planar micro-spikes with protruding barbs are developed for micro-scale biopsy and the feasibility of using the micro-spike as a micro-scale biopsy tool is evaluated for the first time. The fabrication process utilizes a deep silicon etch to define the micro-spike outline, resulting in protruding barbs of various shapes. Shanks of the fabricated micro-spikes are 3 mm long, 100 µm thick and 250 µm wide. Barbs protruding from micro-spike shanks facilitate the biopsy procedure by tearing off and retaining samples from target tissues. Micro-spikes with barbs successfully extracted tissue samples from the small intestines of the anesthetized pig, whereas micro-spikes without barbs failed to obtain a biopsy sample. Parylene coating can be applied to improve the biocompatibility of the micro-spike without deteriorating the biopsy function of the micro-spike. In addition, to show that the biopsy with the micro-spike can be applied to tissue analysis, samples obtained by micro-spikes were examined using immunofluorescent staining. Nuclei and F-actin of cells which are extracted by the micro-spike from a transwell were clearly visualized by immunofluorescent staining.

Electrical behavior of free-standing porous silicon layers

International Nuclear Information System (INIS)

Bazrafkan, I.; Dariani, R.S.

2009-01-01

The electrical behavior of porous silicon (PS) layers has been investigated on one side of p-type silicon with various anodization currents and electrolytes. The two contact I-V characteristic is assigned by the metal/porous silicon rectifying interface, whereas, by using the van der Pauw technique, a nonlinear dependence of the current vs voltage was found. By using Dimethylformamide (DMF) in electrolyte, regular structures and columns were formed and porosity increased. Our results showed that by using DMF, surface resistivity of PS samples increased and became double for free-standing porous silicon (FPS). The reason could be due to increasing surface area and adsorbing some more gas molecules. Activation energy of PS samples was also increased from 0.31 to 0.34 eV and became 0.35 eV for FPS. The changes induced by storage are attributed to the oxidation process of the internal surface of free-standing porous silicon layers.

Integration of a silicon-based microprobe into a gear measuring instrument for accurate measurement of micro gears

International Nuclear Information System (INIS)

Ferreira, N; Krah, T; Jeong, D C; Kniel, K; Härtig, F; Metz, D; Dietzel, A; Büttgenbach, S

2014-01-01

The integration of silicon micro probing systems into conventional gear measuring instruments (GMIs) allows fully automated measurements of external involute micro spur gears of normal modules smaller than 1 mm. This system, based on a silicon microprobe, has been developed and manufactured at the Institute for Microtechnology of the Technische Universität Braunschweig. The microprobe consists of a silicon sensor element and a stylus which is oriented perpendicularly to the sensor. The sensor is fabricated by means of silicon bulk micromachining. Its small dimensions of 6.5 mm × 6.5 mm allow compact mounting in a cartridge to facilitate the integration into a GMI. In this way, tactile measurements of 3D microstructures can be realized. To enable three-dimensional measurements with marginal forces, four Wheatstone bridges are built with diffused piezoresistors on the membrane of the sensor. On the reverse of the membrane, the stylus is glued perpendicularly to the sensor on a boss to transmit the probing forces to the sensor element during measurements. Sphere diameters smaller than 300 µm and shaft lengths of 5 mm as well as measurement forces from 10 µN enable the measurements of 3D microstructures. Such micro probing systems can be integrated into universal coordinate measuring machines and also into GMIs to extend their field of application. Practical measurements were carried out at the Physikalisch-Technische Bundesanstalt by qualifying the microprobes on a calibrated reference sphere to determine their sensitivity and their physical dimensions in volume. Following that, profile and helix measurements were carried out on a gear measurement standard with a module of 1 mm. The comparison of the measurements shows good agreement between the measurement values and the calibrated values. This result is a promising basis for the realization of smaller probe diameters for the tactile measurement of micro gears with smaller modules. (paper)

Radiation damage of silicon structures with electrons of 900 MeV

CERN Document Server

Rachevskaia, I; Bosisio, L; Dittongo, S; Quai, E; Rizzo, G

2002-01-01

We present first results on the irradiation of double-sided silicon microstrip detectors and test structures performed at the Elettra synchrotron radiation facility at Trieste, Italy. The devices were irradiated with 900 MeV electrons. The test structures we used for studying bulk, surface and oxide irradiation damage were guard ring diodes, gated diodes and MOS capacitors. The test structures and the double-sided microstrip detectors were produced by Micron Semiconductor Ltd. (England) and IRST (Trento, Italy). For the first time, bulk-type inversion is observed to occur after high-energy electron irradiation. Current and inter-strip resistance measurements performed on the microstrip detectors show that the devices are still usable after type inversion.

Silicon/SU8 multi-electrode micro-needle for in vivo neurochemical monitoring.

Science.gov (United States)

Vasylieva, Natalia; Marinesco, Stéphane; Barbier, Daniel; Sabac, Andrei

2015-10-15

Simultaneous monitoring of glucose and lactate is an important challenge for understanding brain energetics in physiological or pathological states. We demonstrate here a versatile method based on a minimally invasive single implantation in the rat brain. A silicon/SU8-polymer multi-sensing needle-shaped biosensor, was fabricated and tested. The multi-electrode array design comprises three platinum planar microelectrodes with a surface area of 40 × 200 µm(2) and a spacing of 200 µm, which were micromachined on a single 3mm long micro-needle having a 100 × 50 µm(2) cross-section for reduced tissue damage during implantation. Platinum micro-electrodes were aligned at the bottom of micro-wells obtained by photolithography on a SU8 photoresist layer. After clean room processing, each micro-electrode was functionalized inside the micro-wells by means of a micro-dispensing device, either with glucose oxidase or with lactate oxidase, which were cross-linked on the platinum electrodes. The third electrode covered with Bovine Serum Albumin (BSA) was used for the control of non-specific currents. The thick SU8 photoresist layer has revealed excellent electrical insulation of the micro-electrodes and between interconnection lines, and ensured a precise localization and packaging of the sensing enzymes on platinum micro-electrodes. During in vitro calibration with concentrations of analytes in the mM range, the micro-wells patterned in the SU8 photoresist proved to be highly effective in eliminating cross-talk signals, caused by H2O2 diffusion from closely spaced micro-electrodes. Moreover, our biosensor was successfully assayed in the rat cortex for simultaneous monitoring of both glucose and lactate during insulin and glucose administration. Copyright © 2015 Elsevier B.V. All rights reserved.

Numerical analysis of the effect of side holes of a double J stent on flow rate and pattern.

Science.gov (United States)

Kim, Kyung-Wuk; Choi, Young Ho; Lee, Seung Bae; Baba, Yasutaka; Kim, Hyoung-Ho; Suh, Sang-Ho

2015-01-01

A double J stent has been used widely these days for patients with a ureteral stenosis or with renal stones and lithotripsy. The stent has multiple side holes in the shaft, which supply detours for urine flow. Even though medical companies produce various forms of double J stents that have different numbers and positions of side holes in the stent, the function of side holes in fluid dynamics has not been studied well. Here, the flow rate and pattern around the side holes of a double J stent were evaluated in curved models of a stented ureter based on the human anatomy and straight models for comparison. The total flow rate was higher in the stent with a greater number of side holes. The inflow and outflow to the stent through the side holes in the curved ureter was more active than in the straight ureter, which means the flow through side holes exists even in the ureter without ureteral stenosis or occlusion and even in the straight ureter. When the diameter of the ureter changed, the in-stent flow rate in the ureter did not change and the extraluminal flow rate was higher in the ureter with a greater diameter.

Nucleate pool boiling investigation on a silicon test section with micro-fabricated cavities

International Nuclear Information System (INIS)

Sanna, A.; Kenning, D.B.R.; Karayiannis, T.G.; Hutter, C.; Sefiane, K.; Nelson, R.A.

2009-01-01

The basic mechanisms of nucleate boiling are still not completely understood, in spite of the many numerical and experimental studies dedicated to the topic. The use of a hybrid code allows reasonable computational times for simulations of a solid plate with a large population of artificial micro-cavities with fixed distribution. This paper analyses the guidelines for the design, through numerical simulations, of the location and sizes of micro-fabricated cavities on a new silicon test section immersed in FC-72 at the saturation temperature for different pressures with an imposed heat flux applied at the back of the plate. Particular focus is on variations of wall temperature around nucleation sites. (author)

Performance Test Results of a Single-sided Silicon Strip Detector with a Radioactive Source and a Proton Beam

International Nuclear Information System (INIS)

Ki, Y. I.; Kah, D. H.; Son, D. H.; Kang, H. D.; Kim, H. J.; Kim, H. O.; Bae, J. B.; Ryu, S.; Park, H.; Kim, K. R.

2007-01-01

Due to high intrinsic precision and high speed properties of a silicon material, the silicon detector has been used in various applications such as medical imaging detector, radiation detector, positioning detectors in space science and experimental particle physics. High technology, modern equipment, and deep expertise are required to design and fabricate good quality of silicon sensors. Only few facilities in the world can develop silicon sensors which meet requirements of sensor performances. That is one of main reasons that the silicon sensor is so expensive and it takes time to purchase the silicon sensor once it is ordered. We designed and fabricated AC-coupled single-sided silicon strip sensors and developed front-end electronics and DAQ system to read out sensor signals. The silicon strip sensors were fabricated on a 5-in. n-type silicon wafer which has an orientation, high resistivity (>5 kΩ · cm) and a thickness of 380 μm. We measured the signal-to-noise ratio (SNR) of each channel by using a radioactive source and a 45 MeV proton beam from the MC-50 cyclotron at the Korea Institute of Radiological and Medical Science (KIRAMS) in Seoul. We present the measurement results of the SNRs of the silicon strip sensor with a proton beam and radioactive sources

Superparamagnetic iron oxide nanoparticle attachment on array of micro test tubes and microbeakers formed on p-type silicon substrate for biosensor applications

Directory of Open Access Journals (Sweden)

Raja Sufi

2011-01-01

Full Text Available Abstract A uniformly distributed array of micro test tubes and microbeakers is formed on a p-type silicon substrate with tunable cross-section and distance of separation by anodic etching of the silicon wafer in N, N-dimethylformamide and hydrofluoric acid, which essentially leads to the formation of macroporous silicon templates. A reasonable control over the dimensions of the structures could be achieved by tailoring the formation parameters, primarily the wafer resistivity. For a micro test tube, the cross-section (i.e., the pore size as well as the distance of separation between two adjacent test tubes (i.e., inter-pore distance is typically approximately 1 μm, whereas, for a microbeaker the pore size exceeds 1.5 μm and the inter-pore distance could be less than 100 nm. We successfully synthesized superparamagnetic iron oxide nanoparticles (SPIONs, with average particle size approximately 20 nm and attached them on the porous silicon chip surface as well as on the pore walls. Such SPION-coated arrays of micro test tubes and microbeakers are potential candidates for biosensors because of the biocompatibility of both silicon and SPIONs. As acquisition of data via microarray is an essential attribute of high throughput bio-sensing, the proposed nanostructured array may be a promising step in this direction.

Double-sided auction mechanism design in electricity based on maximizing social welfare

International Nuclear Information System (INIS)

Zou Xiaoyan

2009-01-01

An efficient electricity double-sided auction mechanism should control market power and enhance the social welfare of the electricity market. Based on this goal, the paper designs a new double-sided auction mechanism. In the new mechanism, the social welfare contribution of each participant plays a pivotal role, because this contribution is the critical factor in market clearing, payment settling, and transaction matching rules. In particular, each winner of the auction can gain transfer payments according to his contribution to social welfare in the electricity market, and this gives the mechanism the ability to control the market power of some participants. At the same time, this mechanism ensures that the market organizer balances his budget. We then conduct a theoretical and empirical analysis based on the Spanish electricity market. Both of the results show that compared to the uniform-pricing mechanism, the new mechanism can reduce market power of participants and enhance the social welfare of the electricity market.

Micro-Mechanical Voltage Tunable Fabry-Perot Filters Formed in (111) Silicon. Degree awarded by Colorado Univ., Boulder, CO

Science.gov (United States)

Patterson, James D.

1997-01-01

The MEMS (Micro-Electro-Mechanical-Systems) technology is quickly evolving as a viable means to combine micro-mechanical and micro-optical elements on the same chip. One MEMS technology that has recently gained attention by the research community is the micro-mechanical Fabry-Perot optical filter. A MEMS based Fabry-Perot consists of a vertically integrated structure composed of two mirrors separated by an air gap. Wavelength tuning is achieved by applying a bias between the two mirrors resulting in an attractive electrostatic force which pulls the mirrors closer. In this work, we present a new micro-mechanical Fabry-Perot structure which is simple to fabricate and is integratable with low cost silicon photodetectors and transistors. The structure consists of a movable gold coated oxide cantilever for the top mirror and a stationary Au/Ni plated silicon bottom mirror. The fabrication process is single mask level, self aligned, and requires only one grown or deposited layer. Undercutting of the oxide cantilever is carried out by a combination of RIE and anisotropic KOH etching of the (111) silicon substrate. Metallization of the mirrors is provided by thermal evaporation and electroplating. The optical and electrical characteristics of the fabricated devices were studied and show promissing results. A wavelength shift of 120nm with 53V applied bias was demonstrated by one device geometry using 6.27 micrometer air gap. The finesse of the structure was 2.4. Modulation bandwidths ranging from 91KHz to greater than 920KHz were also observed. Theoretical calculations show that if mirror reflectivity, smoothness, and parallelism are improved, a finesse of 30 is attainable. The predictions also suggest that a reduction of the air gap to 1 micrometer results in an increased wavelength tuning range of 175 nm with a CMOS compatible 4.75V.

Studying signal collection in the punch-through protection area of a silicon micro-strip sensor using a micro-focused X-ray beam

CERN Document Server

Poley, Anne-luise; The ATLAS collaboration

2018-01-01

For the Phase-II Upgrade of the ATLAS detector, a new, all-silicon tracker will be constructed in order to cope with the increased track density and radiation level of the High-Luminosity Large Hadron Collider. While silicon strip sensors are designed to minimise the fraction of dead material and maximise the active area of a sensor, concessions must be made to the requirements of operating a sensor in a particle physics detector. Sensor geometry features like the punch-through protection deviate from the standard sensor architecture and thereby affect the charge collection in that area. In order to study the signal collection of silicon strip sensors over their punch-through-protection area, ATLAS silicon strip sensors were scanned with a micro-focused X-ray beam at the Diamond Light Source. Due to the highly focused X-ray beam ($\\unit[2\\times3]{\\upmu\\text{m}}^2$) and the short average path length of an electron after interaction with an X-ray photon ($\\unit[\\leq2]{\\upmu\\text{m}}$), local signal collection i...

Micro Products - Product Development and Design

DEFF Research Database (Denmark)

Hansen, Hans Nørgaard

2003-01-01

Innovation within the field of micro and nano technology is to a great extent characterized by cross-disciplinary skills. The traditional disciplines like e.g. physics, biology, medicine and engineering are united in a common development process that can only take place in the presence of multi......-disciplinary competences. One example is sensors for chemical analysis of fluids, where chemistry, biology and flow mechanics all influence the design of the product and thereby the industrial fabrication of the product [1]. On the technological side the development has moved very fast, primarily driven by the need...... of the electronics industry to create still smaller chips with still larger capacity. Therefore the manufacturing technologies connected with micro/nano products in silicon are relatively highly developed compared to the technologies used for manufacturing micro products in metals, polymers and ceramics. For all...

CBM experiment. Characterization studies of the detector modules for silicon tracking syste

Directory of Open Access Journals (Sweden)

I. V. Panasenko

2013-09-01

Full Text Available The double-sided silicon microstrip detector prototypes with 50 μm pitch developed together with CiS, Germany, have been characterized in a 2.4 GeV/c proton beam at COSY, Forschungszentrum Jülich, Germany. Data analyses including reconstruction of 1-strip and 2-strip clusters have been performed. We have done the study of charge sharing in the interstrip gap. In particular it was found that there is a charge loss of less than 10 % in the interstrip gap. The calculated signal-to-noise ratio is around 19 for the p-side of the sensor and it is sufficient for hit reconstruction. Also the charge sharing function which allows more precise determination of the hit position in silicon sensor, have been reconstructed.

Plated copper front side metallization on printed seed-layers for silicon solar cells

OpenAIRE

Kraft, Achim

2015-01-01

A novel copper front side metallization architecture for silicon solar cells based on a fine printed silver seed-layer, plated with nickel, copper and silver, is investigated. The work focuses on the printing of fine seed-layers with low silver consumption, the corrosion of the printed seed-layers by the interaction with electrolyte solutions and the encapsulation material on module level and on the long term stability of the cells due to copper migration. The investigation of the correlation...

Sub-millimeter arbitrary arrangements of monolithically micro-scale electrical double layer capacitors

International Nuclear Information System (INIS)

Laszczyk, Karolina U; Kazufumi, Kobashi; Sakurai, Shunsuke; Sekiguchi, Atsuko; Futaba, Don N; Yamada, Takeo; Hata, Kenji

2015-01-01

We report the investigation on the reproducibility of micro-scale electric double layer capacitors (micro-EDLCs). The micro-EDLC components were fabricated parallel using photolithography, wet and dry processing. Electrodes of the micro-EDLCs are highly dense packed Single Wall Carbon Nanotubes (SWCNTs) that form a mesh structure. The micro- EDLCs are connected 1-10 in series and in parallel being unified electrical circuits to tune the capacitance and the operational voltage. To confirm the reproducibility of the cells as well as the yield we performed electrochemical measurements in order to define the performance uniformity between cells strings and individual cells connected in a string. For 1-10 cells in series and in parallel the trends for the capacitance and operational voltage satisfied electrophysics rules governing cells addition. However, the measurements of the individual cells in a string revealed the significant performance discrepancy that might result in a shorten life cycling of a circuit. (paper)

Sub-millimeter arbitrary arrangements of monolithically micro-scale electrical double layer capacitors

Science.gov (United States)

Laszczyk, Karolina U.; Kazufumi, Kobashi; Sakurai, Shunsuke; Sekiguchi, Atsuko; Futaba, Don N.; Yamada, Takeo; Hata, Kenji

2015-12-01

We report the investigation on the reproducibility of micro-scale electric double layer capacitors (micro-EDLCs). The micro-EDLC components were fabricated parallel using photolithography, wet and dry processing. Electrodes of the micro-EDLCs are highly dense packed Single Wall Carbon Nanotubes (SWCNTs) that form a mesh structure. The micro- EDLCs are connected 1-10 in series and in parallel being unified electrical circuits to tune the capacitance and the operational voltage. To confirm the reproducibility of the cells as well as the yield we performed electrochemical measurements in order to define the performance uniformity between cells strings and individual cells connected in a string. For 1-10 cells in series and in parallel the trends for the capacitance and operational voltage satisfied electrophysics rules governing cells addition. However, the measurements of the individual cells in a string revealed the significant performance discrepancy that might result in a shorten life cycling of a circuit.

Design of a low parasitic inductance SiC power module with double-sided cooling

Energy Technology Data Exchange (ETDEWEB)

Yang, Fei [The University of Tennessee, Knoxville; Liang, Zhenxian [Cree Inc.; Wang, Fei [ORNL; Wang, Zhiqiang [ORNL

2017-03-01

In this paper, a low-parasitic inductance SiC power module with double-sided cooling is designed and compared with a baseline double-sided cooled module. With the unique 3D layout utilizing vertical interconnection, the power loop inductance is effectively reduced without sacrificing the thermal performance. Both simulations and experiments are carried out to validate the design. Q3D simulation results show a power loop inductance of 1.63 nH, verified by the experiment, indicating more than 60% reduction of power loop inductance compared with the baseline module. With 0Ω external gate resistance turn-off at 600V, the voltage overshoot is less than 9% of the bus voltage at a load of 44.6A.

The DAMPE silicon tungsten tracker

CERN Document Server

Gallo, Valentina; Asfandiyarov, R; Azzarello, P; Bernardini, P; Bertucci, B; Bolognini, A; Cadoux, F; Caprai, M; Domenjoz, M; Dong, Y; Duranti, M; Fan, R; Franco, M; Fusco, P; Gargano, F; Gong, K; Guo, D; Husi, C; Ionica, M; Lacalamita, N; Loparco, F; Marsella, G; Mazziotta, M N; Mongelli, M; Nardinocchi, A; Nicola, L; Pelleriti, G; Peng, W; Pohl, M; Postolache, V; Qiao, R; Surdo, A; Tykhonov, A; Vitillo, S; Wang, H; Weber, M; Wu, D; Wu, X; Zhang, F; De Mitri, I; La Marra, D

2017-01-01

The DArk Matter Particle Explorer (DAMPE) satellite has been successfully launched on the 17th December 2015. It is a powerful space detector designed for the identification of possible Dark Matter signatures thanks to its capability to detect electrons and photons with an unprecedented energy resolution in an energy range going from few GeV up to 10 TeV. Moreover, the DAMPE satellite will contribute to a better understanding of the propagation mechanisms of high energy cosmic rays measuring the nuclei flux up to 100 TeV. DAMPE is composed of four sub-detectors: a plastic strip scintillator, a silicon-tungsten tracker-converter (STK), a BGO imaging calorimeter and a neutron detector. The STK is made of twelve layers of single-sided AC-coupled silicon micro-strip detectors for a total silicon area of about 7 $m^2$ . To promote the conversion of incident photons into electron-positron pairs, tungsten foils are inserted into the supporting structure. In this document, a detailed description of the STK constructi...

An all-silicone zoom lens in an optical imaging system

International Nuclear Information System (INIS)

Zhao Cun-Hua

2013-01-01

An all-silicone zoom lens is fabricated. A tunable metal ringer is fettered around the side edge of the lens. A nylon rope linking a motor is tied, encircling the notch in the metal ringer. While the motor is operating, the rope can shrink or release to change the focal length of the lens. A calculation method is developed to obtain the focal length and the zoom ratio. The testing is carried out in succession. The testing values are compared with the calculated ones, and they tally with each other well. Finally, the imaging performance of the all-silicone lens is demonstrated. The all-silicone lens has potential uses in cellphone cameras, notebook cameras, micro monitor lenses, etc. (electromagnetism, optics, acoustics, heat transfer, classical mechanics, and fluid dynamics)

The dominant role of side chains in supramolecular double helical organisation in synthetic tripeptides

Science.gov (United States)

Sharma, Ankita; Tiwari, Priyanka; Dutt Konar, Anita

2018-06-01

Peptide self-assembled nanostructures have attracted attention recently owing to their promising applications in diversified avenues. To validate the importance of sidechains in supramolecular architectural stabilization, herein this report describes the self-assembly propensities involving weak interactions in a series of model tripeptides Boc-Xaa-Aib-Yaa-OMe I-IV, (where Xaa = 4-F-Phe/NMeSer/Ile & Yaa = Tyr in peptide I-III respectively and Xaa = 4-F-Phe & Yaa = Ile in peptide IV) differing in terminal side chains. The solid state structural analysis reveals that tripeptide (I) displays supramolecular preference for double helical architecture. However, when slight modification has been introduced in the N-terminal side chains disfavour the double helical organisation (Peptide II and III). Indeed the peptides display sheet like ensemble within the framework. Besides replacement of C-terminal Tyr by Ile in peptide I even do not promote the architecture, emphasizing the dominant role of balance of side chains in stabilizing double helical organisation. The CD measurements, concentration dependant studies, NMR titrations and ROESY spectra are well in agreement with the solid state conformational investigation. Moreover the morphological experiments utilizing FE-SEM, support the heterogeneity present in the peptides. Thus this work may not only hold future promise in understanding the structure and function of neurodegenerative diseases but also assist in rational design of protein modification in biologically active peptides.

Ab initio density functional theory investigation of structural and electronic properties of double-walled silicon carbide nanotubes

Science.gov (United States)

Moradian, Rostam; Behzad, Somayeh; Chegel, Raad

2009-12-01

By using ab initio density functional theory, the structural and electronic properties of (n,n)@(11,11) double-walled silicon carbide nanotubes (SiCNTs) are investigated. Our calculations reveal the existence of an energetically favorable double-walled nanotube whose interwall distance is about 4.3 Å. Interwall spacing and curvature difference are found to be essential for the electronic states around the Fermi level.

Micro-Raman spectroscopy as a tool for the characterization of silicon carbide in power semiconductor material processing

Science.gov (United States)

De Biasio, M.; Kraft, M.; Schultz, M.; Goller, B.; Sternig, D.; Esteve, R.; Roesner, M.

2017-05-01

Silicon carbide (SiC) is a wide band-gap semi-conductor material that is used increasingly for high voltage power devices, since it has a higher breakdown field strength and better thermal conductivity than silicon. However, in particular its hardness makes wafer processing difficult and many standard semi-conductor processes have to be specially adapted. We measure the effects of (i) mechanical processing (i.e. grinding of the backside) and (ii) chemical and thermal processing (i.e. doping and annealing), using confocal microscopy to measure the surface roughness of ground wafers and micro-Raman spectroscopy to measure the stresses induced in the wafers by grinding. 4H-SiC wafers with different dopings were studied before and after annealing, using depth-resolved micro-Raman spectroscopy to observe how doping and annealing affect: i.) the damage and stresses induced on the crystalline structure of the samples and ii.) the concentration of free electrical carriers. Our results show that mechanical, chemical and thermal processing techniques have effects on this semiconductor material that can be observed and characterized using confocal microscopy and high resolution micro Raman spectroscopy.

Development and Evaluation of Test Stations for the Quality Assurance of the Silicon Micro-Strip Detector Modules for the CMS Experiment

CERN Document Server

Pöttgens, Michael

2007-01-01

CMS (Compact Muon Solenoid) is one of four large-scale detectors which will be operated at the LHC (Large Hadron Collider) at the European Laboratory for Particle Physics (CERN). For the search for new physics the reconstruction of the collision products and their properties is essential. In the innermost part of the CMS detector the traces of ionizing particles are measured utilizing a silicon tracker. A large fraction of this detector is equipped with silicon micro-strip modules which provide a precise space resolution in 1-dimension. A module consists of a sensor for detection of particles, the corresponding read-out electronics (hybrid) and a mechanical support structure. Since the 15,148 modules, which will be installed in the silicon micro-strip detector, have a total sensitive surface area of about 198 m2, the inner tracker of CMS is the largest silicon tracking detector, which has ever been built. While the sensors and hybrids are produced in industry, the construction of the modules and the control o...

Nonlinear stability research on the hydraulic system of double-side rolling shear

Science.gov (United States)

Wang, Jun; Huang, Qingxue; An, Gaocheng; Qi, Qisong; Sun, Binyu

2015-10-01

This paper researches the stability of the nonlinear system taking the hydraulic system of double-side rolling shear as an example. The hydraulic system of double-side rolling shear uses unsymmetrical electro-hydraulic proportional servo valve to control the cylinder with single piston rod, which can make best use of the space and reduce reversing shock. It is a typical nonlinear structure. The nonlinear state-space equations of the unsymmetrical valve controlling cylinder system are built first, and the second Lyapunov method is used to evaluate its stability. Second, the software AMEsim is applied to simulate the nonlinear system, and the results indicate that the system is stable. At last, the experimental results show that the system unsymmetrical valve controlling the cylinder with single piston rod is stable and conforms to what is deduced by theoretical analysis and simulation. The construction and application of Lyapunov function not only provide the theoretical basis for using of unsymmetrical valve controlling cylinder with single piston rod but also develop a new thought for nonlinear stability evaluation.

Al-Si alloy point contact formation and rear surface passivation for silicon solar cells using double layer porous silicon

International Nuclear Information System (INIS)

Moumni, Besma; Ben Jaballah, Abdelkader; Bessais, Brahim

2012-01-01

Lowering the rear surface recombination velocities by a dielectric layer has fascinating advantages compared with the standard fully covered Al back-contact silicon solar cells. In this work the passivation effect by double layer porous silicon (PS) (wide band gap) and the formation of Al-Si alloy in narrow p-type Si point contact areas for rear passivated solar cells are analysed. As revealed by Fourier transform infrared spectroscopy, we found that a thin passivating aluminum oxide (Al 2 O 3 ) layer is formed. Scanning electron microscopy analysis performed in cross sections shows that with bilayer PS, liquid Al penetrates into the openings, alloying with the Si substrate at depth and decreasing the contact resistivity. At the solar cell level, the reduction in the contact area and resistivity leads to a minimization of the fill factor losses.

Breakdown study of dc silicon micro-discharge devices

International Nuclear Information System (INIS)

Schwaederlé, L; Kulsreshath, M K; Lefaucheux, P; Tillocher, T; Dussart, R; Overzet, L J

2012-01-01

The influence of geometrical and operating parameters on the electrical characteristics of dc microcavity discharges provides insight into their controlling physics. We present here results of such a study on silicon-based microcavity discharge devices carried out in helium at pressure ranging from 100 to 1000 Torr. Different micro-reactor configurations were measured. The differences include isolated single cavities versus arrays of closely spaced cavities, various cavity geometries (un-etched as well as isotropically and anisotropically etched), various dimensions (100 or 150 µm cavity diameter and 0-150 µm depth). The electrode gap was kept constant in all cases at approximately 6 µm. The applied electric field reaches 5 × 10 7 V m -1 which results in current and power densities up to 2 A cm -2 and 200 kW cm -3 , respectively. The number of microcavities and the microcavity depth are shown to be the most important geometrical parameters for predicting breakdown and operation of microcavity devices. The probability of initiatory electron generation which is volume dependent and the electric field strength which is depth dependent are, respectively, considered to be responsible. The cavity shape (isotropic/anisotropic) and diameter had no significant influence. The number of micro-discharges that could be ignited depends on the rate of voltage rise and pressure. Larger numbers ignite at lower frequency and pressure. In addition, the voltage polarity has the largest influence on the electrical characteristics of the micro-discharge of all parameters, which is due to both the asymmetric role of electrodes as electron emitter and the non-uniformity of the electric field resulting in different ionization efficiencies. The qualitative shape of all breakdown voltage versus pressure curves can be explained in terms of the distance over which the discharge breakdown effectively occurs as long as one understand that this distance can depend on pressure. (paper)

Design, characterization and beam test performance of different silicon microstrip detector geometries

International Nuclear Information System (INIS)

Catacchini, E.; Ciampolini, L.; Civinini, C.; D'Alessandro, R.; Focardi, E.; Lenzi, M.; Meschini, M.; Parrini, G.; Pieri, M.

1998-01-01

During the last few years a large number of silicon microstrip detectors has been especially designed and tested in order to study and optimize the performances of the tracking devices to be used in the forward-backward part of the CMS (technical proposal, CERN/LHCC 94-38 LHCC/Pl, 15 December 1994) experiment. Both single and double sided silicon detectors of a trapezoidal ('wedge') shape and with different strip configurations, including prototypes produced with double metal technology, were characterized in the laboratory and tested using high-energy beams. Furthermore, due to the high-radiation environment where the detectors should operate, particular care was devoted to the study of the characteristics of heavily irradiated detectors. The main results of detector performances (charge response, signal-to-noise ratio, spatial resolution etc.) will be reviewed and discussed. (author)

Cell force mapping using a double-sided micropillar array based on the moiré fringe method

Science.gov (United States)

Zhang, F.; Anderson, S.; Zheng, X.; Roberts, E.; Qiu, Y.; Liao, R.; Zhang, X.

2014-07-01

The mapping of traction forces is crucial to understanding the means by which cells regulate their behavior and physiological function to adapt to and communicate with their local microenvironment. To this end, polymeric micropillar arrays have been used for measuring cell traction force. However, the small scale of the micropillar deflections induced by cell traction forces results in highly inefficient force analyses using conventional optical approaches; in many cases, cell forces may be below the limits of detection achieved using conventional microscopy. To address these limitations, the moiré phenomenon has been leveraged as a visualization tool for cell force mapping due to its inherent magnification effect and capacity for whole-field force measurements. This Letter reports an optomechanical cell force sensor, namely, a double-sided micropillar array (DMPA) made of poly(dimethylsiloxane), on which one side is employed to support cultured living cells while the opposing side serves as a reference pattern for generating moiré patterns. The distance between the two sides, which is a crucial parameter influencing moiré pattern contrast, is predetermined during fabrication using theoretical calculations based on the Talbot effect that aim to optimize contrast. Herein, double-sided micropillar arrays were validated by mapping mouse embryo fibroblast contraction forces and the resulting force maps compared to conventional microscopy image analyses as the reference standard. The DMPA-based approach precludes the requirement for aligning two independent periodic substrates, improves moiré contrast, and enables efficient moiré pattern generation. Furthermore, the double-sided structure readily allows for the integration of moiré-based cell force mapping into microfabricated cell culture environments or lab-on-a-chip devices.

FRONT-END ASIC FOR A SILICON COMPTON TELESCOPE.

Energy Technology Data Exchange (ETDEWEB)

DE GERONIMO,G.; FRIED, J.; FROST, E.; PHLIPS, B.; VERNON, E.; WULF, E.A.

2007-10-27

We describe a front-end application specific integrated circuit (ASIC) developed for a silicon Compton telescope. Composed of 32 channels, it reads out signals in both polarities from each side of a Silicon strip sensor, 2 mm thick 27 cm long, characterized by a strip capacitance of 30 pF. Each front-end channel provides low-noise charge amplification, shaping with a stabilized baseline, discrimination, and peak detection with an analog memory. The channels can process events simultaneously, and the read out is sparsified. The charge amplifier makes uses a dual-cascode configuration and dual-polarity adaptive reset, The low-hysteresis discriminator and the multi-phase peak detector process signals with a dynamic range in excess of four hundred. An equivalent noise charge (ENC) below 200 electrons was measured at 30 pF, with a slope of about 4.5 electrons/pF at a peaking time of 4 {micro}s. With a total dissipated power of 5 mW the channel covers an energy range up to 3.2 MeV.

A silicon strip module for the ATLAS inner detector upgrade in the super LHC collider

Energy Technology Data Exchange (ETDEWEB)

Gonzalez-Sevilla, S., E-mail: Sergio.Gonzalez.Sevilla@cern.ch [DPNC, University of Geneva, CH 1211 Geneva 4 (Switzerland); Barbier, G. [DPNC, University of Geneva, CH 1211 Geneva 4 (Switzerland); Anghinolfi, F. [European Organization for Nuclear Research, CERN CH-1211, Geneva 23 (Switzerland); Cadoux, F.; Clark, A. [DPNC, University of Geneva, CH 1211 Geneva 4 (Switzerland); Dabrowski, W.; Dwuznik, M. [AGH University of Sceince and Technology, Faculty of Physics and Applied Computer Science, Krakow (Poland); Ferrere, D. [DPNC, University of Geneva, CH 1211 Geneva 4 (Switzerland); Garcia, C. [IFIC, Instituto de Fisica Corpuscular (CSIC-Universitat de Valencia), Edificio Investigacion Paterna, Apartado 22085 46071 Valencia (Spain); Ikegami, Y. [KEK, High Energy Accelerator Research Organization, Oho 1-1, Tsukuba, Ibaraki 305-0801 (Japan); Hara, K. [University of Tsukuba, School of Pure and Applied Sciences, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8571 (Japan); Jakobs, K. [Physikalisches Institut, Universitaet Freiburg, Hermann-Herder-Str. 3, D-79104 Freiburg (Germany); Kaplon, J. [European Organization for Nuclear Research, CERN CH-1211, Geneva 23 (Switzerland); Koriki, T. [KEK, High Energy Accelerator Research Organization, Oho 1-1, Tsukuba, Ibaraki 305-0801 (Japan); Lacasta, C. [IFIC, Instituto de Fisica Corpuscular (CSIC-Universitat de Valencia), Edificio Investigacion Paterna, Apartado 22085 46071 Valencia (Spain); La Marra, D. [DPNC, University of Geneva, CH 1211 Geneva 4 (Switzerland); Marti i Garcia, S. [IFIC, Instituto de Fisica Corpuscular (CSIC-Universitat de Valencia), Edificio Investigacion Paterna, Apartado 22085 46071 Valencia (Spain); Parzefall, U. [Physikalisches Institut, Universitaet Freiburg, Hermann-Herder-Str. 3, D-79104 Freiburg (Germany); Pohl, M. [DPNC, University of Geneva, CH 1211 Geneva 4 (Switzerland); Terada, S. [KEK, High Energy Accelerator Research Organization, Oho 1-1, Tsukuba, Ibaraki 305-0801 (Japan)

2011-04-21

The ATLAS detector is a general purpose experiment designed to fully exploit the discovery potential of the Large Hadron Collider (LHC) at a nominal luminosity of 10{sup 34} cm{sup -2} s{sup -1}. It is expected that after several years of successful data-taking, the LHC physics program will be extended by increasing the peak luminosity by one order of magnitude. For ATLAS, an upgrade scenario will imply the complete replacement of the Inner Detector (ID), since the current tracker will not provide the required performance due to cumulated radiation damage and a dramatic increase in the detector occupancy. In this paper, a proposal of a double-sided silicon micro-strip module for the short-strip region of the future ATLAS ID is presented. The expected thermal performance based upon detailed FEA simulations is discussed. First electrical results from a prototype version of the next generation readout front-end chips are also shown.

A silicon strip module for the ATLAS inner detector upgrade in the super LHC collider

CERN Document Server

Gonzalez-Sevilla, S; Parzefall, U; Clark, A; Ikegami, Y; Hara, K; Garcia, C; Jakobs, K; Dwuznik, M; Terada, S; Barbier, G; Koriki, T; Lacasta, C; Unno, Y; Anghinolfi, F; Cadoux, F; Garcia, S M I; Ferrere, D; La Marra, D; Pohl, M; Dabrowski, W; Kaplon, J

2011-01-01

The ATLAS detector is a general purpose experiment designed to fully exploit the discovery potential of the Large Hadron Collider (LHC) at a nominal luminosity of 10(34)cm(-2)s(-1). It is expected that after several years of successful data-taking, the LHC physics program will be extended by increasing the peak luminosity by one order of magnitude. For ATLAS, an upgrade scenario will imply the complete replacement of the Inner Detector (ID), since the current tracker will not provide the required performance due to cumulated radiation damage and a dramatic increase in the detector occupancy. In this paper, a proposal of a double-sided silicon micro-strip module for the short-strip region of the future ATLAS ID is presented. The expected thermal performance based upon detailed FEA simulations is discussed. First electrical results from a prototype version of the next generation readout front-end chips are also shown. (C) 2010 Elsevier B.V. All rights reserved.

Test beam results from the prototype L3 silicon microvertex detector

International Nuclear Information System (INIS)

Adam, A.; Adriani, O.; Ahlen, S.

1993-11-01

We report test beam results on the overall system performance of two modules of the L3 Silicon Microvertex Detector exposed to a 50 GeV pion beam. Each module consists of two AC coupled double-sided silicon strip detectors equipped with VLSI readout electronics. The associated data acquisition system comprises an 8 bit FADC, an optical data transmission circuit, a specialized data reduction processor and a synchronization module. A spatial resolution of 7.5 μm and 14 μm for the two coordinates and a detection efficiency in excess of 99% are measured. (orig.)

Study of boron distribution in silicon structure by side long section technique

International Nuclear Information System (INIS)

Kadirova, M.; Zhumaev, N.; Simakhin, Yu.F.; Usmanova, M.M.

1997-01-01

To study deep boron diffusion in the complex silicon structures, consisting of interchange boron doping layers of mono- and polycrystalline silicon, separated by oxide films a technique of side long section by using Solid State Nuclear Track Detector (SSNTD) has been elaborated. The boron distribution technique is based on the detection of alpha-particles from the 10 B(n,α) 7 Li reaction with cellulose nitrate film. The etched α-track registering cellulose nitrite film show the structure image magnified 1/sinφ fold. Boron concentration defined by density of the etched pits appearing on the film surface. An optical microscope analysis of the sample track-mapping image is realised by examination with closely spaced (Δl < Δx/sinφ) and largely spaced (Δl ≥ Δx/sinφ) movements. For analysis of both experimental data the computer application programs have been developed. An universal algorithm for determination of the boron profiles has been created to take into account influence of a deeper layers on a total measurement of track density when Δl < Δx/sinφ. (author)

Detector and Front-end electronics for ALICE and STAR silicon strip layers

CERN Document Server

Arnold, L; Coffin, J P; Guillaume, G; Higueret, S; Jundt, F; Kühn, C E; Lutz, Jean Robert; Suire, C; Tarchini, A; Berst, D; Blondé, J P; Clauss, G; Colledani, C; Deptuch, G; Dulinski, W; Hu, Y; Hébrard, L; Kucewicz, W; Boucham, A; Bouvier, S; Ravel, O; Retière, F

1998-01-01

Detector modules consisting of Silicon Strip Detector (SSD) and Front End Electronics (FEE) assembly have been designed in order to provide the two outer layers of the ALICE Inner Tracker System (ITS) [1] as well as the outer layer of the STAR Silicon Vertex Tracker (SVT) [2]. Several prototypes have beenproduced and tested in the SPS and PS beam at CERN to validate the final design. Double-sided, AC-coupled SSD detectors provided by two different manufacturers and also a pair of single-sided SSD have been asssociated to new low-power CMOS ALICE128C ASIC chips in a new detector module assembly. The same detectors have also been associated to current Viking electronics for reference purpose. These prototype detector modules are described and some first results are presented.

High density micro-pyramids with silicon nanowire array for photovoltaic applications

International Nuclear Information System (INIS)

Rahman, Tasmiat; Navarro-Cía, Miguel; Fobelets, Kristel

2014-01-01

We use a metal assisted chemical etch process to fabricate silicon nanowire arrays (SiNWAs) onto a dense periodic array of pyramids that are formed using an alkaline etch masked with an oxide layer. The hybrid micro-nano structure acts as an anti-reflective coating with experimental reflectivity below 1% over the visible and near-infrared spectral regions. This represents an improvement of up to 11 and 14 times compared to the pyramid array and SiNWAs on bulk, respectively. In addition to the experimental work, we optically simulate the hybrid structure using a commercial finite difference time domain package. The results of the optical simulations support our experimental work, illustrating a reduced reflectivity in the hybrid structure. The nanowire array increases the absorbed carrier density within the pyramid by providing a guided transition of the refractive index along the light path from air into the silicon. Furthermore, electrical simulations which take into account surface and Auger recombination show an efficiency increase for the hybrid structure of 56% over bulk, 11% over pyramid array and 8.5% over SiNWAs. (paper)

Advection within side-by-side liquid micro-cylinders in a cross-flow

Science.gov (United States)

Dong, Qingming; Sau, Amalendu

2017-11-01

The gaseous SO2 entrainment from outer air stream and dispersion in binary and ternary liquid micro-cylinders appearing side-by-side are examined hereby. The separation/attachment regulated non-uniform interfacial momentum exchange creates main stream driven "primary" and shear reversed "secondary" vortices in the liquid cylinders. At separation points, the sense of rotation of the generated "primary-secondary" vortex pair remains inward directed. We define such a vortex pair as the "inflow" type. However, at stagnation or attachment points, the sense of rotation of a "primary-primary" or "secondary-secondary" vortex pair remains outward directed, and such a vortex pair is defined as the "outflow" type. For the coupled water cylinders facing an oncoming stream contaminated by gaseous SO2, its absorption and internal transport are effectively controlled by dominant "inflow" and "outflow" natured dynamics of the said vortex pairs, besides by diffusion. The evolving "inflow" natured "primary-secondary" vortex pairs at separation points actively entrain the outer SO2, whereas the "outflow" natured vortex-pairs oppose SO2 entry through the stagnation regions. Moreover, the blockage induced steady-symmetric, steady-deflected, and flip-flopping air-jets through gaps, for varied gap-ratio (1 ≤ G/R ≤ 4) and Reynolds number (30 ≤ Re ≤ 160), create distinctive impact both on quantitative SO2 absorption (mso2 ') and convective nature of the SO2 transport in upper, lower, and middle cylinders, by virtue of modified strength and size of the inflow and outflow paired vortices. The present study shows that the tiny "secondary vortices" play important roles in SO2 entrainment and in effectively controlling the local absorption rate Rs o2. The sudden acceleration and upward/downward deflection of gap-flows enhanced near-neck advective SO2 entrainment by suitably strengthening the "inflow" natured local vortex dynamics. Conversely, for the reduced size of secondary vortices

Creation of Micro Products in the future - joining of materials as a key technology

DEFF Research Database (Denmark)

Møller, Per; Hansen, Hans Nørgaard

2003-01-01

jet printers, reading caps for hard disks etc.) as well as medical and biomedical products (pacemakers, analysis equipment, sensors etc.). Furthermore motion sensors for the automotive industry represent an industrial application of micro systems. On the technological side the development has moved...... very fast, primarily driven by the need of the electronics industry to create still smaller chips with still larger capacity. Therefore the manufacturing technologies connected with micro/nano products in silicon are relatively highly developed compared to the technologies used for manufacturing...

Bilayer–metal assisted chemical etching of silicon microwire arrays for photovoltaic applications

Directory of Open Access Journals (Sweden)

R. W. Wu

2016-02-01

Full Text Available Silicon microwires with lateral dimension from 5 μm to 20 μm and depth as long as 20 μm are prepared by bilayer metal assisted chemical etching (MaCE. A bilayer metal configuration (Metal 1 / Metal 2 was applied to assist etching of Si where metal 1 acts as direct catalyst and metal 2 provides mechanical support. Different metal types were investigated to figure out the influence of metal catalyst on morphology of etched silicon. We find that silicon microwires with vertical side wall are produced when we use Ag/Au bilayer, while cone–like and porous microwires formed when Pt/Au is applied. The different micro-/nano-structures in as-etched silicon are demonstrated to be due to the discrepancy of work function of metal catalyst relative to Si. Further, we constructed a silicon microwire arrays solar cells in a radial p–n junction configurations in a screen printed aluminum paste p–doping process.

Comparative measurements of proton dechanneling in silicon under channeling, blocking and double alignment conditions

International Nuclear Information System (INIS)

Kerkow, H.; Pietsch, H.; Taeubner, F.

1980-01-01

Backscattering yields of 300 keV protons are measured under channeling (sub(ch)), blocking (sub(bl)) and double alignment (sub(da)) conditions on (111)-silicon crystals. It was established that the relation sub(ch)-sub(bl)sub(da) is fulfilled within an experimental error of 10% for clean surfaces as well as for vacuum deposited layers on the crystal surface. (author)

Porous silicon technology for integrated microsystems

Science.gov (United States)

Wallner, Jin Zheng

With the development of micro systems, there is an increasing demand for integrable porous materials. In addition to those conventional applications, such as filtration, wicking, and insulating, many new micro devices, including micro reactors, sensors, actuators, and optical components, can benefit from porous materials. Conventional porous materials, such as ceramics and polymers, however, cannot meet the challenges posed by micro systems, due to their incompatibility with standard micro-fabrication processes. In an effort to produce porous materials that can be used in micro systems, porous silicon (PS) generated by anodization of single crystalline silicon has been investigated. In this work, the PS formation process has been extensively studied and characterized as a function of substrate type, crystal orientation, doping concentration, current density and surfactant concentration and type. Anodization conditions have been optimized for producing very thick porous silicon layers with uniform pore size, and for obtaining ideal pore morphologies. Three different types of porous silicon materials: meso porous silicon, macro porous silicon with straight pores, and macro porous silicon with tortuous pores, have been successfully produced. Regular pore arrays with controllable pore size in the range of 2mum to 6mum have been demonstrated as well. Localized PS formation has been achieved by using oxide/nitride/polysilicon stack as masking materials, which can withstand anodization in hydrofluoric acid up to twenty hours. A special etching cell with electrolytic liquid backside contact along with two process flows has been developed to enable the fabrication of thick macro porous silicon membranes with though wafer pores. For device assembly, Si-Au and In-Au bonding technologies have been developed. Very low bonding temperature (˜200°C) and thick/soft bonding layers (˜6mum) have been achieved by In-Au bonding technology, which is able to compensate the potentially

Double-Sided Externalities and Vertical Contracting : Evidence from European Franchising Data

OpenAIRE

Magali Chaudey; Muriel Fadairo

2009-01-01

This paper deals with contractual design and vertical relationships within a franchise chain, in the field of the literature on share contracts. Within a double-sided moral hazard, the contract sharing the profit generated by the vertical decentralized structure results from the necessity to incite both the franchisee and the franchisor. This paper takes into account the five franchisor incentive mechanisms in order to study the chosen type of vertical coordination in different contexts. Usin...

Porous silicon: silicon quantum dots for photonic applications

International Nuclear Information System (INIS)

Pavesi, L.; Guardini, R.

1996-01-01

Porous silicon formation and structure characterization are briefly illustrated. Its luminescence properties rae presented and interpreted on the basis of exciton recombination in quantum dot structures: the trap-controlled hopping mechanism is used to describe the recombination dynamics. Porous silicon application to photonic devices is considered: porous silicon multilayer in general, and micro cavities in particular are described. The present situation in the realization of porous silicon LEDs is considered, and future developments in this field of research are suggested. (author). 30 refs., 30 figs., 13 tabs

Charge Dynamics and Spin Blockade in a Hybrid Double Quantum Dot in Silicon

Directory of Open Access Journals (Sweden)

Matias Urdampilleta

2015-08-01

Full Text Available Electron spin qubits in silicon, whether in quantum dots or in donor atoms, have long been considered attractive qubits for the implementation of a quantum computer because of silicon’s “semiconductor vacuum” character and its compatibility with the microelectronics industry. While donor electron spins in silicon provide extremely long coherence times and access to the nuclear spin via the hyperfine interaction, quantum dots have the complementary advantages of fast electrical operations, tunability, and scalability. Here, we present an approach to a novel hybrid double quantum dot by coupling a donor to a lithographically patterned artificial atom. Using gate-based rf reflectometry, we probe the charge stability of this double quantum-dot system and the variation of quantum capacitance at the interdot charge transition. Using microwave spectroscopy, we find a tunnel coupling of 2.7 GHz and characterize the charge dynamics, which reveals a charge T_{2}^{*} of 200 ps and a relaxation time T_{1} of 100 ns. Additionally, we demonstrate a spin blockade at the inderdot transition, opening up the possibility to operate this coupled system as a singlet-triplet qubit or to transfer a coherent spin state between the quantum dot and the donor electron and nucleus.

The dark side of silicon energy efficient computing in the dark silicon era

CERN Document Server

Liljeberg, Pasi; Hemani, Ahmed; Jantsch, Axel; Tenhunen, Hannu

2017-01-01

This book presents the state-of-the art of one of the main concerns with microprocessors today, a phenomenon known as "dark silicon". Readers will learn how power constraints (both leakage and dynamic power) limit the extent to which large portions of a chip can be powered up at a given time, i.e. how much actual performance and functionality the microprocessor can provide. The authors describe their research toward the future of microprocessor development in the dark silicon era, covering a variety of important aspects of dark silicon-aware architectures including design, management, reliability, and test. Readers will benefit from specific recommendations for mitigating the dark silicon phenomenon, including energy-efficient, dedicated solutions and technologies to maximize the utilization and reliability of microprocessors. Enables readers to understand the dark silicon phenomenon and why it has emerged, including detailed analysis of its impacts; Presents state-of-the-art research, as well as tools for mi...

Silicon microfabricated beam expander

Science.gov (United States)

Othman, A.; Ibrahim, M. N.; Hamzah, I. H.; Sulaiman, A. A.; Ain, M. F.

2015-03-01

The feasibility design and development methods of silicon microfabricated beam expander are described. Silicon bulk micromachining fabrication technology is used in producing features of the structure. A high-precision complex 3-D shape of the expander can be formed by exploiting the predictable anisotropic wet etching characteristics of single-crystal silicon in aqueous Potassium-Hydroxide (KOH) solution. The beam-expander consist of two elements, a micromachined silicon reflector chamber and micro-Fresnel zone plate. The micro-Fresnel element is patterned using lithographic methods. The reflector chamber element has a depth of 40 µm, a diameter of 15 mm and gold-coated surfaces. The impact on the depth, diameter of the chamber and absorption for improved performance are discussed.

Application of Laser Micro-irradiation for Examination of Single and Double Strand Break Repair in Mammalian Cells.

Science.gov (United States)

Holton, Nathaniel W; Andrews, Joel F; Gassman, Natalie R

2017-09-05

Highly coordinated DNA repair pathways exist to detect, excise and replace damaged DNA bases, and coordinate repair of DNA strand breaks. While molecular biology techniques have clarified structure, enzymatic functions, and kinetics of repair proteins, there is still a need to understand how repair is coordinated within the nucleus. Laser micro-irradiation offers a powerful tool for inducing DNA damage and monitoring the recruitment of repair proteins. Induction of DNA damage by laser micro-irradiation can occur with a range of wavelengths, and users can reliably induce single strand breaks, base lesions and double strand breaks with a range of doses. Here, laser micro-irradiation is used to examine repair of single and double strand breaks induced by two common confocal laser wavelengths, 355 nm and 405 nm. Further, proper characterization of the applied laser dose for inducing specific damage mixtures is described, so users can reproducibly perform laser micro-irradiation data acquisition and analysis.

The silicon tracking system of the CBM experiment at FAIR

Energy Technology Data Exchange (ETDEWEB)

Singla, Minni [GSI Darmstadt (Germany); Collaboration: CBM-Collaboration

2015-07-01

The Compressed Baryonic Matter (CBM) experiment, one of the major scientific pillars at FAIR, will explore the phase diagram of strongly interacting matter at the highest net-baryon densities in nucleus-nucleus collisions with interaction rates up to 10 MHz. The Silicon Tracking System is the central detector system of the CBM experiment. Its task is to perform track reconstruction and momentum determination for all charged particles created in beam-target collisions at SIS 100 and SIS 300 beam energies. The technical challenges to meet are a high granularity matching the high track densities, a fast self-triggering read-out coping with high interaction rates, and a low mass to yield high momentum resolution of Δp/p=1%. The detector system acceptance covers polar angles between 2.5 and 25 degrees and will be operated in the 1 T field of a superconducting dipole magnet. We introduce the concept of the STS, being comprised of eight tracking stations employing ∝1300 double-sided silicon microstrip sensors on modular structures that keep the read-out electronics outside the physics aperture. Ultra-thin-multiline micro-cables will be used to bridge the distance between the microstrip sensors and the readout electronics. Infrastructure such as power lines and cooling plates will be placed at the periphery of the stations. The status of the STS development is summarized in the presentation, including an overview on sensors, read-out electronics, prototypes, and system integration.

Single Side Electrolytic In-Process Dressing (ELID) Grinding with Lapping Kinematics of Silicon Carbide

Science.gov (United States)

Khoshaim, Ahmed Bakr

The demand for Silicon Carbide ceramics (SiC) has increased significantly in the last decade due to its reliable physical and chemical properties. The silicon carbide is widely used for aerospace segments in addition to many uses in the industry. Sometimes, a single side grinding is preferable than conventional grinding, for it has the ability to produce flat ceramics. However, the manufacturing cost is still high because of the high tool wear and long machining time. Part of the solution is to use electrolytic in process dressing (ELID) to reduce the processing time. The study on ELID single side grinding of ceramics has never been attempted before. The study involves four variables with three levels each. One of the variables, which is the eccentricity, is being investigated for the first time on ceramics. A full factorial design, for both the surface roughness and material removal rate, guides to calculate mathematical models that can predict future results. Three grinding wheel mesh sizes are used. An investigation of the influence of different grain size on the results can then be evaluated. The kinematics of the process was studied based on eccentricity in order to optimize the pattern of the diamond grains. The experiment is performed with the assist of the proposed specialized ELID fluid, TRIM C270E.

Development of Microstrip Silicon Detectors for Star and ALICE

CERN Document Server

Arnold, L; Coffin, J P; Guillaume, G; Guthneck, L; Higueret, S; Hundt, F; Kühn, C E; Lutz, Jean Robert; Pozdniakov, S; Rami, F; Tarchini, A; Boucham, A; Bouvier, S; Erazmus, B; Germain, M; Giliberto, S; Martin, L; Le Moal, C; Roy, C; Colledani, C; Dulinski, W; Turchetta, R

1998-01-01

The physics program of STAR and ALICE at ultra-relativistic heavy ion colliders, RHIC and LHC respectively, requires very good tracking capabilities. Some specific quark gluon plasma signatures, based on strange matter measurements implies quite a good secondary vertex reconstruction.For this purpose, the inner trackers of both experiments are composed of high-granularity silicon detectors. The current status of the development of double-sided silicon microstrip detectors is presented in this work.The global performance for tracking purpose adn particle identification are first reviewed. Then tests of the detectors and of the associated readout electronics are described. In-beam measurements of noise, spatial resolution, efficiency and charge matching capability, as well as radiation hardness, are examined.

Nonlinear electron acoustic structures generated on the high-potential side of a double layer

Directory of Open Access Journals (Sweden)

R. Pottelette

2009-04-01

Full Text Available High-time resolution measurements of the electron distribution function performed in the auroral upward current region reveals a large asymmetry between the low- and high-potential sides of a double-layer. The latter side is characterized by a large enhancement of a locally trapped electron population which corresponds to a significant part (~up to 30% of the total electron density. As compared to the background hot electron population, this trapped component has a very cold temperature in the direction parallel to the static magnetic field. Accordingly, the differential drift between the trapped and background hot electron populations generates high frequency electron acoustic waves in a direction quasi-parallel to the magnetic field. The density of the trapped electron population can be deduced from the frequency where the electron acoustic spectrum maximizes. In the auroral midcavity region, the electron acoustic waves may be modulated by an additional turbulence generated in the ion acoustic range thanks to the presence of a pre-accelerated ion beam located on the high-potential side of the double layer. Electron holes characterized by bipolar pulses in the electric field are sometimes detected in correlation with these electron acoustic wave packets.

Characterization of the Young's modulus and residual stresses for a sputtered silicon oxynitride film using micro-structures

International Nuclear Information System (INIS)

Dong, Jian; Du, Ping; Zhang, Xin

2013-01-01

Silicon oxynitride (SiON) is an important material to fabricate micro-electro-mechanical system (MEMS) devices due to its composition-dependent tunability in electronic and mechanical properties. In this work, the SiON film with 41.45% silicon, 32.77% oxygen and 25.78% nitrogen content was deposited by RF magnetron sputtering. Two types of optimized micro-structures including micro-cantilevers and micro-rotating-fingers were designed and fabricated using MEMS surface micromachining technology. The micro-cantilever bending tests were conducted using a nanoindenter to characterize the Young's modulus of the SiON film. Owing to the elimination of the residual stress effect on the micro-cantilever structure, higher accuracy in the Young's modulus was achieved from this technique. With the information of Young's modulus of the film, the residual stresses were characterized from the deflection of the micro-rotating-fingers. This structure was able to locally measure a large range of tensile or compressive residual stresses in a thin film with sufficient sensitivities. The results showed that the Young's modulus of the SiON film was 122 GPa and the residual stresses of the SiON film were 327 MPa in the crystallographic orientation of the wafer and 334 MPa in the direction perpendicular to the crystallographic orientation, both in compression. This work presents a comprehensive methodology to measure the Young's modulus and residual stresses of a thin film with improved accuracy, which is promising for applications in mechanical characterization of MEMS devices. - Highlight: • We measured the Young's modulus and residual stress of SiON film by microstructure. • Micro cantilever structure improved the Young's modulus' measurement accuracy. • We explored the reason for the deviations of residual stress value of SiON film

A micro-structured Si-based electrodes for high capacity electrical double layer capacitors

International Nuclear Information System (INIS)

Krikscikas, Valdas; Oguchi, Hiroyuki; Hara, Motoaki; Kuwano, Hiroki; Yanazawa, Hiroshi

2014-01-01

We challenged to make basis for Si electrodes of electric double layer capacitors (EDLC) used as a power source of micro-sensor nodes. Mcroelectromechanical systems (MEMS) processes were successfully introduced to fabricate micro-structured Si-based electrodes to obtain high surface area which leads to high capacity of EDLCs. Study of fundamental properties revealed that the microstructured electrodes benefit from good wettability to electrolytes, but suffer from electric resistance. We found that this problem can be solved by metal-coating of the electrode surface. Finally we build an EDLC consisting of Au-coated micro-structured Si electrodes. This EDLC showed capacity of 14.3 mF/cm 2 , which is about 530 times larger than that of an EDLC consisting of flat Au electrodes

A thermal-driven silicon micro xy-stage integrated with piezoresistive sensors for nano-positioning

International Nuclear Information System (INIS)

Choi, Young-Soo; Zhang, Yan; Lee, Dong-Weon

2012-01-01

This paper describes a novel micro xy-stage, driven by double-hot arm horizontal thermal micro-actuators integrated with a piezoresistive sensor (PS) for low-voltage operation and precise control. This micro xy-stage structure is linked with chevron beams and optimized to amplify the displacement generated by the micro-actuators that provide a pull force to the movable platform. The PS employed for in situ displacement detection and feedback control is fabricated at the base of a cold arm, which minimizes the influence of temperature change induced by electro-thermal heating. The micro xy-stage structure is defined through the use of a simple micromachining process, released by backside wet etching with a special tool. For an input power of approximately 44 mW, each chevron actuator provides about 16 µm and the total displacement of the platform is close to 32 µm. The sensitivity of the PS is better than 1 mV µm −1 , obtained from the amplified voltage output of the Wheatstone bridge circuit. The potential applications of the proposed micro xy-stage lie in micro- or nano-manipulation, as well as the positioning of ultra-small objects in nanotechnology. (paper)

Recent progress in sensor- and mechanics-R and D for the Belle II Silicon Vertex Detector

Energy Technology Data Exchange (ETDEWEB)

Bergauer, T., E-mail: thomas.bergauer@oeaw.ac.at [Institute of High Energy Physics, Nikolsdorfer Gasse 18, A-1050 Vienna (Austria); Doljeschi, P.; Frankenberger, A.; Friedl, M.; Gfall, I.; Irmler, C. [Institute of High Energy Physics, Nikolsdorfer Gasse 18, A-1050 Vienna (Austria); Onuki, Y. [University of Tokyo, Department of Physics, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-0033 (Japan); Smiljic, D. [Institute of High Energy Physics, Nikolsdorfer Gasse 18, A-1050 Vienna (Austria); Tsuboyama, T. [KEK, 1-1 Oho, Tsukuba, Ibaraki 305-0801 (Japan); Valentan, M. [Institute of High Energy Physics, Nikolsdorfer Gasse 18, A-1050 Vienna (Austria)

2013-08-01

The Belle experiment at the KEKB electron/positron collider in Tsukuba (Japan) was successfully running for more than ten years. A major update of the machine to SuperKEKB is now foreseen until 2015, aiming a peak luminosity which is 40 times the peak value of the previous system. This also requires a redesign of the Belle detector (leading to Belle II) and especially its Silicon Vertex Detector (SVD), which surrounds the beam pipe. The future Belle II SVD will consist of four layers of double-sided silicon strip sensors based on 6 in. silicon wafers. Three of the four layers will be equipped with trapezoidal sensors in the slanted forward region. Moreover, two inner layers with pixel detectors based on DEPFET technology will complement the SVD as innermost detector. Since the KEKB-factory operates at relatively low energy, material inside the active volume has to be minimized in order to reduce multiple scattering. This can be achieved by arranging the sensors in the so-called “Origami chip-on-sensor concept”, and a very light-weight mechanical support structure made from carbon fiber reinforced Airex foam. Moreover, CO{sub 2} cooling for the front-end chips will ensure high efficiency at minimum material budget. In this paper, an overview of the future Belle II SVD design will be given, covering the silicon sensors, the readout electronics and the mechanics. A strong emphasis will be given to our R and D work on double-sided sensors where different p-stop layouts for the n-side of the detectors were compared. Moreover, this paper gives updated numbers for the mechanical dimensions of the ladders and their radii.

Recent progress in sensor- and mechanics-R and D for the Belle II Silicon Vertex Detector

International Nuclear Information System (INIS)

Bergauer, T.; Doljeschi, P.; Frankenberger, A.; Friedl, M.; Gfall, I.; Irmler, C.; Onuki, Y.; Smiljic, D.; Tsuboyama, T.; Valentan, M.

2013-01-01

The Belle experiment at the KEKB electron/positron collider in Tsukuba (Japan) was successfully running for more than ten years. A major update of the machine to SuperKEKB is now foreseen until 2015, aiming a peak luminosity which is 40 times the peak value of the previous system. This also requires a redesign of the Belle detector (leading to Belle II) and especially its Silicon Vertex Detector (SVD), which surrounds the beam pipe. The future Belle II SVD will consist of four layers of double-sided silicon strip sensors based on 6 in. silicon wafers. Three of the four layers will be equipped with trapezoidal sensors in the slanted forward region. Moreover, two inner layers with pixel detectors based on DEPFET technology will complement the SVD as innermost detector. Since the KEKB-factory operates at relatively low energy, material inside the active volume has to be minimized in order to reduce multiple scattering. This can be achieved by arranging the sensors in the so-called “Origami chip-on-sensor concept”, and a very light-weight mechanical support structure made from carbon fiber reinforced Airex foam. Moreover, CO 2 cooling for the front-end chips will ensure high efficiency at minimum material budget. In this paper, an overview of the future Belle II SVD design will be given, covering the silicon sensors, the readout electronics and the mechanics. A strong emphasis will be given to our R and D work on double-sided sensors where different p-stop layouts for the n-side of the detectors were compared. Moreover, this paper gives updated numbers for the mechanical dimensions of the ladders and their radii

Micro-electro-mechanical systems (MEMS)-based micro-scale direct methanol fuel cell development

International Nuclear Information System (INIS)

Yao, S.-C.; Tang Xudong; Hsieh, C.-C.; Alyousef, Yousef; Vladimer, Michael; Fedder, Gary K.; Amon, Cristina H.

2006-01-01

This paper describes a high-power density, silicon-based micro-scale direct methanol fuel cell (DMFC), under development at Carnegie Mellon. Major issues in the DMFC design include the water management and energy-efficient micro fluidic sub-systems. The air flow and the methanol circulation are both at a natural draft, while a passive liquid-gas separator removes CO 2 from the methanol chamber. An effective approach for maximizing the DMFC energy density, pumping the excess water back to the anode, is illustrated. The proposed DMFC contains several unique features: a silicon wafer with arrays of etched holes selectively coated with a non-wetting agent for collecting water at the cathode; a silicon membrane micro pump for pumping the collected water back to the anode; and a passive liquid-gas separator for CO 2 removal. All of these silicon-based components are fabricated using micro-electro-mechanical systems (MEMS)-based processes on the same silicon wafer, so that interconnections are eliminated, and integration efforts as well as post-fabrication costs are both minimized. The resulting fuel cell has an overall size of one cubic inch, produces a net output of 10 mW, and has an energy density three to five times higher than that of current lithium-ion batteries

Switching Device Dead Time Optimization of Resonant Double-Sided LCC Wireless Charging System for Electric Vehicles

Directory of Open Access Journals (Sweden)

Xi Zhang

2017-11-01

Full Text Available Aiming at the reduction of the influence of the dead time setting on power level and efficiency of the inverter of double-sided LCC resonant wireless power transfer (WPT system, a dead time soft switching optimization method for metal–oxide–semiconductor field-effect transistor (MOSFET is proposed. At first, the mathematic description of double-sided LCC resonant wireless charging system is established, and the operating mode is analyzed as well, deducing the quantitative characteristic that the secondary side compensation capacitor C2 can be adjusted to ensure that the circuit is inductive. A dead time optimization design method is proposed, contributing to achieving zero-voltage switching (ZVS of the inverter, which is closely related to the performance of the WPT system. In the end, a prototype is built. The experimental results verify that dead time calculated by this optimized method can ensure the soft switching of the inverter MOSFET and promote the power and efficiency of the WPT.

Silicon microfabricated beam expander

International Nuclear Information System (INIS)

Othman, A.; Ibrahim, M. N.; Hamzah, I. H.; Sulaiman, A. A.; Ain, M. F.

2015-01-01

The feasibility design and development methods of silicon microfabricated beam expander are described. Silicon bulk micromachining fabrication technology is used in producing features of the structure. A high-precision complex 3-D shape of the expander can be formed by exploiting the predictable anisotropic wet etching characteristics of single-crystal silicon in aqueous Potassium-Hydroxide (KOH) solution. The beam-expander consist of two elements, a micromachined silicon reflector chamber and micro-Fresnel zone plate. The micro-Fresnel element is patterned using lithographic methods. The reflector chamber element has a depth of 40 µm, a diameter of 15 mm and gold-coated surfaces. The impact on the depth, diameter of the chamber and absorption for improved performance are discussed

Silicon microfabricated beam expander

Energy Technology Data Exchange (ETDEWEB)

Othman, A., E-mail: aliman@ppinang.uitm.edu.my; Ibrahim, M. N.; Hamzah, I. H.; Sulaiman, A. A. [Faculty of Electrical Engineering, Universiti Teknologi MARA Malaysia, 40450, Shah Alam, Selangor (Malaysia); Ain, M. F. [School of Electrical and Electronic Engineering, Engineering Campus, Universiti Sains Malaysia, Seri Ampangan, 14300,Nibong Tebal, Pulau Pinang (Malaysia)

2015-03-30

The feasibility design and development methods of silicon microfabricated beam expander are described. Silicon bulk micromachining fabrication technology is used in producing features of the structure. A high-precision complex 3-D shape of the expander can be formed by exploiting the predictable anisotropic wet etching characteristics of single-crystal silicon in aqueous Potassium-Hydroxide (KOH) solution. The beam-expander consist of two elements, a micromachined silicon reflector chamber and micro-Fresnel zone plate. The micro-Fresnel element is patterned using lithographic methods. The reflector chamber element has a depth of 40 µm, a diameter of 15 mm and gold-coated surfaces. The impact on the depth, diameter of the chamber and absorption for improved performance are discussed.

Double Step Sintering Behavior Of 316L Nanoparticle Dispersed Micro-Sphere Powder

Directory of Open Access Journals (Sweden)

Jeon Byoungjun

2015-06-01

Full Text Available 316L stainless steel is a well-established engineering material and lots of components are fabricated by either ingot metallurgy or powder metallurgy. From the viewpoints of material properties and process versatility, powder metallurgy has been widely applied in industries. Generally, stainless steel powders are prepared by atomization processes and powder characteristics, compaction ability, and sinterability are quite different according to the powder preparation process. In the present study, a nanoparticle dispersed micro-sphere powder is synthesized by pulse wire explosion of 316L stainless steel wire in order to facilitate compaction ability and sintering ability. Nanoparticles which are deposited on the surface of micro-powder are advantageous for a rigid die compaction while spherical micro-powder is not to be compacted. Additionally, double step sintering behavior is observed for the powder in the dilatometry of cylindrical compact body. Earlier shrinkage peak comes from the sintering of nanoparticle and later one results from the micro-powder sintering. Microstructure as well as phase composition of the sintered body is investigated.

Reflective acquaintance with other minds and the double-sided disclosure of the lived-body

DEFF Research Database (Denmark)

Farley, Adam

2014-01-01

This paper will consider the phenomenological disclosure of the reflecting-body vis-à-vis subject’s reflective acquaintance with other minds. To this end, phenomenological accounts regarding the double-sided disclosure of the lived-body will be expounded and developed. It will be argued...... be admitted across these modes. To this end, observations regarding the lived disclosure of reflective acts vis-à-vis their embodied conduct are provided; suggesting that a partial inversion of the lived-body’s double-sidedness occurs during the transition to the reflective mode. Directions for future...

Limitations to laser machining of silicon using femtosecond micro-Bessel beams in the infrared

International Nuclear Information System (INIS)

Grojo, David; Mouskeftaras, Alexandros; Delaporte, Philippe; Lei, Shuting

2015-01-01

We produce and characterize high-angle femtosecond Bessel beams at 1300-nm wavelength leading to nonlinearly ionized plasma micro-channels in both glass and silicon. With microjoule pulse energy, we demonstrate controlled through-modifications in 150-μm glass substrates. In silicon, strong two-photon absorption leads to larger damages at the front surface but also a clamping of the intensity inside the bulk at a level of ≈4 × 10 11  W cm −2 which is below the threshold for volume and rear surface modification. We show that the intensity clamping is associated with a strong degradation of the Bessel-like profile. The observations highlight that the inherent limitation to ultrafast energy deposition inside semiconductors with Gaussian focusing [Mouskeftaras et al., Appl. Phys. Lett. 105, 191103 (2014)] applies also for high-angle Bessel beams

Ultra-thin silicon/electro-optic polymer hybrid waveguide modulators

Energy Technology Data Exchange (ETDEWEB)

Qiu, Feng; Spring, Andrew M. [Institute for Materials Chemistry and Engineering, Kyushu University, 6-1 Kasuga-koen Kasuga, Fukuoka 816-8580 (Japan); Sato, Hiromu [Department of Molecular and Material Sciences, Kyushu University, 6-1 Kasuga-koen Kasuga, Fukuoka 816-8580 (Japan); Maeda, Daisuke; Ozawa, Masa-aki; Odoi, Keisuke [Nissan Chemical Industries, Ltd., 2-10-1 Tuboi Nishi, Funabashi, Chiba 274-8507 (Japan); Aoki, Isao; Otomo, Akira [National Institute of Information and Communications Technology, 588-2 Iwaoka, Nishi-ku, Kobe 651-2492 (Japan); Yokoyama, Shiyoshi, E-mail: s-yokoyama@cm.kyushu-u.ac.jp [Institute for Materials Chemistry and Engineering, Kyushu University, 6-1 Kasuga-koen Kasuga, Fukuoka 816-8580 (Japan); Department of Molecular and Material Sciences, Kyushu University, 6-1 Kasuga-koen Kasuga, Fukuoka 816-8580 (Japan)

2015-09-21

Ultra-thin silicon and electro-optic (EO) polymer hybrid waveguide modulators have been designed and fabricated. The waveguide consists of a silicon core with a thickness of 30 nm and a width of 2 μm. The cladding is an EO polymer. Optical mode calculation reveals that 55% of the optical field around the silicon extends into the EO polymer in the TE mode. A Mach-Zehnder interferometer (MZI) modulator was prepared using common coplanar electrodes. The measured half-wave voltage of the MZI with 7 μm spacing and 1.3 cm long electrodes is 4.6 V at 1550 nm. The evaluated EO coefficient is 70 pm/V, which is comparable to that of the bulk EO polymer film. Using ultra-thin silicon is beneficial in order to reduce the side-wall scattering loss, yielding a propagation loss of 4.0 dB/cm. We also investigated a mode converter which couples light from the hybrid EO waveguide into a strip silicon waveguide. The calculation indicates that the coupling loss between these two devices is small enough to exploit the potential fusion of a hybrid EO polymer modulator together with a silicon micro-photonics device.

Expansion of lower-frequency locally resonant band gaps using a double-sided stubbed composite phononic crystals plate with composite stubs

Energy Technology Data Exchange (ETDEWEB)

Li, Suobin; Chen, Tianning [School of Mechanical Engineering and State Key Laboratory for Strength and Vibration of Mechanical Structures, Xi' an Jiaotong University, Xi' an, Shaanxi 710049 (China); Wang, Xiaopeng, E-mail: xpwang@mail.xjtu.edu.cn [School of Mechanical Engineering and State Key Laboratory for Strength and Vibration of Mechanical Structures, Xi' an Jiaotong University, Xi' an, Shaanxi 710049 (China); Li, Yinggang [Key Laboratory of High Performance Ship Technology of Ministry of Education, Wuhan University of Technology, Wuhan, 430070 (China); Chen, Weihua [School of Mechanical Engineering and State Key Laboratory for Strength and Vibration of Mechanical Structures, Xi' an Jiaotong University, Xi' an, Shaanxi 710049 (China)

2016-06-03

We studied the expansion of locally resonant complete band gaps in two-dimensional phononic crystals (PCs) using a double-sided stubbed composite PC plate with composite stubs. Results show that the introduction of the proposed structure gives rise to a significant expansion of the relative bandwidth by a factor of 1.5 and decreases the opening location of the first complete band gap by a factor of 3 compared to the classic double-sided stubbed PC plate with composite stubs. Furthermore, more band gaps appear in the lower-frequency range (0.006). These phenomena can be attributed to the strong coupling between the “analogous rigid mode” of the stub and the anti-symmetric Lamb modes of the plate. The “analogous rigid mode” of the stub is produced by strengthening the localized resonance effect of the composite plates through the double-sided stubs, and is further strengthened through the introduction of composite stubs. The “analogous rigid mode” of the stubs expands the out-of-plane band gap, which overlaps with in-plane band gap in the lower-frequency range. As a result, the complete band gap is expanded and more complete band gaps appear. - Highlights: • Expansion of lower-frequency locally resonant BGs using novel composite phononic crystals plates. • The proposed structure expands the relative bandwidth 1.5 times compared to classic doubled-sided stubbed PC plates. • The opening location of the first complete BG decreases 3 times compared to the classic doubled-sided stubbed PC plates. • The concept “analogous rigid mode” is put forward to explain the expansion of lower-frequency BGs.

Enhanced cooling in mono-crystalline ultra-thin silicon by embedded micro-air channels

KAUST Repository

Ghoneim, Mohamed T.; Fahad, Hossain M.; Hussain, Aftab M.; Rojas, Jhonathan Prieto; Sevilla, Galo T.; Alfaraj, Nasir; Lizardo, Ernesto B.; Hussain, Muhammad Mustafa

2015-01-01

In today’s digital world, complementary metal oxide semiconductor (CMOS) technology enabled scaling of bulk mono-crystalline silicon (100) based electronics has resulted in their higher performance but with increased dynamic and off-state power consumption. Such trade-off has caused excessive heat generation which eventually drains the charge of battery in portable devices. The traditional solution utilizing off-chip fans and heat sinks used for heat management make the whole system bulky and less mobile. Here we show, an enhanced cooling phenomenon in ultra-thin (>10 μm) mono-crystalline (100) silicon (detached from bulk substrate) by utilizing deterministic pattern of porous network of vertical “through silicon” micro-air channels that offer remarkable heat and weight management for ultra-mobile electronics, in a cost effective way with 20× reduction in substrate weight and a 12% lower maximum temperature at sustained loads. We also show the effectiveness of this event in functional MOS field effect transistors (MOSFETs) with high-κ/metal gate stacks.

Enhanced cooling in mono-crystalline ultra-thin silicon by embedded micro-air channels

KAUST Repository

Ghoneim, Mohamed T.

2015-12-11

In today’s digital world, complementary metal oxide semiconductor (CMOS) technology enabled scaling of bulk mono-crystalline silicon (100) based electronics has resulted in their higher performance but with increased dynamic and off-state power consumption. Such trade-off has caused excessive heat generation which eventually drains the charge of battery in portable devices. The traditional solution utilizing off-chip fans and heat sinks used for heat management make the whole system bulky and less mobile. Here we show, an enhanced cooling phenomenon in ultra-thin (>10 μm) mono-crystalline (100) silicon (detached from bulk substrate) by utilizing deterministic pattern of porous network of vertical “through silicon” micro-air channels that offer remarkable heat and weight management for ultra-mobile electronics, in a cost effective way with 20× reduction in substrate weight and a 12% lower maximum temperature at sustained loads. We also show the effectiveness of this event in functional MOS field effect transistors (MOSFETs) with high-κ/metal gate stacks.

Integration of silicon-based neural probes and micro-drive arrays for chronic recording of large populations of neurons in behaving animals.

Science.gov (United States)

Michon, Frédéric; Aarts, Arno; Holzhammer, Tobias; Ruther, Patrick; Borghs, Gustaaf; McNaughton, Bruce; Kloosterman, Fabian

2016-08-01

Understanding how neuronal assemblies underlie cognitive function is a fundamental question in system neuroscience. It poses the technical challenge to monitor the activity of populations of neurons, potentially widely separated, in relation to behaviour. In this paper, we present a new system which aims at simultaneously recording from a large population of neurons from multiple separated brain regions in freely behaving animals. The concept of the new device is to combine the benefits of two existing electrophysiological techniques, i.e. the flexibility and modularity of micro-drive arrays and the high sampling ability of electrode-dense silicon probes. Newly engineered long bendable silicon probes were integrated into a micro-drive array. The resulting device can carry up to 16 independently movable silicon probes, each carrying 16 recording sites. Populations of neurons were recorded simultaneously in multiple cortical and/or hippocampal sites in two freely behaving implanted rats. Current approaches to monitor neuronal activity either allow to flexibly record from multiple widely separated brain regions (micro-drive arrays) but with a limited sampling density or to provide denser sampling at the expense of a flexible placement in multiple brain regions (neural probes). By combining these two approaches and their benefits, we present an alternative solution for flexible and simultaneous recordings from widely distributed populations of neurons in freely behaving rats.

Displacement and resonance behaviors of a piezoelectric diaphragm driven by a double-sided spiral electrode

KAUST Repository

Shen, Zhiyuan; Olfatnia, Mohammad; Miao, Jianmin; Wang, Zhihong

2012-01-01

This paper presents the design of a lead zirconate titanate (PZT) diaphragm actuated by double-sided patterned electrodes. Au/Cr electrodes were deposited on bulk PZT wafers by sputtering while patterned by a lift-off process. SU-8 thick film

Influence of amino-functional macro and micro silicone softeners on the properties of cotton fabric

International Nuclear Information System (INIS)

Jatoi, A.W.; Khatri, Z.

2015-01-01

Amino-functional silicone softeners are most widely used type of soft finishes owing to their outstanding permanent softness, smoothness and handle characteristics. These soft finishes are prepared in different emulsion droplet sizes such as macro and micro emulsions providing varying characteristics on the textile on which they are applied. The macroemulsions due to their larger droplet sizes lubricate fabric and yarn surfaces, while the micro-emulsion, thanks to their smaller sizes penetrate inside fiber pores. In this research amino-functional macro and micro emulsions have been applied on dyed cotton fabric in 1:1 combination and compared against their influence on physical properties such as bending length, abrasion resistance, tensile strength, crease resistance and water repellency. These emulsions have also been compared for their influence on colorimetric properties; color difference and color strength (K/S values). The results reveal that the softener application in combination improves the properties deteriorated by each softener when applied separately. (author)

A new double sided linear switched reluctance motor with low cost

International Nuclear Information System (INIS)

Daldaban, Ferhat; Ustkoyuncu, Nurettin

2006-01-01

This paper presents the realization and design of a new linear switched reluctance motor (LSRM) structure. The new model has double sided configuration and provides high force for many applications with low cost. The characteristics of the LSRM are obtained by using finite element analysis (FEA) and analytical calculations. The results of the FEA and analytical calculations are presented, and compared with experimental results. A high correlation between experimental and analytical results is obtained, which has been demonstrated in the form of inductance versus position versus current

Template assisted solid state electrochemical growth of silver micro- and nanowires

International Nuclear Information System (INIS)

Peppler, Klaus; Janek, Juergen

2007-01-01

We report on a template based solid state electrochemical method for fabricating silver nanowires with predefined diameter, depending only on the pore diameter of the template. As templates we used porous silicon with pore diameters in the μm range and porous alumina with pore diameters in the nm range. The template pores were filled with silver sulfide (a mixed silver cation and electronic conductor) by direct chemical reaction of silver and sulfur. The filled template was then placed between a silver foil as anode (bottom side) and a microelectrode (top side) as cathode. An array of small cylindrical transference cells with diameters in the range of either micro- or nanometers was thus obtained. By applying a cathodic voltage to the microelectrode silver in the form of either micro- or nanowires was deposited at about 150 deg. C. The growth rate is controllable by the electric current

Quality assurance tests of the CBM silicon tracking system sensors with an infrared laser

Energy Technology Data Exchange (ETDEWEB)

Teklishyn, Maksym [FAIR GmbH, Darmstadt (Germany); KINR, Kyiv (Ukraine); Collaboration: CBM-Collaboration

2016-07-01

Double-sided 300 μm thick silicon microstrip sensors are planned to be used in the Silicon Tracking System (STS) of the future CBM experiment. Different tools, including an infrared laser, are used to induce charge in the sensor medium to study the sensor response. We use present installation to develop a procedure for the sensor quality assurance during mass production. The precise positioning of the laser spot allows to make a clear judgment about the sensor interstrip gap response which provides information about the charge distribution inside the sensor medium. Results are compared with the model estimations.

Microstructured silicon created with a nanosecond neodymium-doped yttrium aluminum garnet laser

Energy Technology Data Exchange (ETDEWEB)

Mandeville, W.J. [MITRE Corporation, Colorado Springs, CO (United States); Shaffer, M.K.; Lu, Yalin; O' Keefe, D.; Knize, R.J. [United States Air Force Academy, USAFA, CO (United States)

2011-08-15

We produce microstructured silicon using frequency doubled, nanosecond Nd:YAG pulses in SF{sub 6} gas. The micro-penitentes formed are up to 20 {mu}m tall with a sulfur concentration of 0.5% near the surface. The infrared absorption is increased to near unity and extends well below the original bandgap far into the infrared. These data are similar to results reported by others using more complicated and less economical femtosecond titanium sapphire and picosecond and nanosecond excimer lasers. (orig.)

The Silicon Vertex Detector for b-tagging at Belle II

International Nuclear Information System (INIS)

Valentan, M.

2013-01-01

The Belle experiment at KEK (Tsukuba, Japan) was successfully operated from 1999 until 2010 and confirmed the theoretical predictions of CP violation. In order to increase the beam intensity, a major upgrade of the KEKB collider is foreseen until 2015. The final goal is to reach a luminosity of 8 x 10 35 cm -2 s -1 , which is about 40 times higher than the previous peak value. This also implies changes to the Belle detector and its innermost tracking subdetector, the SVD (Silicon Vertex Detector), in particular. The SVD will be completely replaced, as it had already operated close to its limits in the past. All other subsystems will also be upgraded. This leads to the new Belle II experiment. The aim of Belle II is to search for deviations from the Standard Model of particle physics by providing extremely precise measurements of rare particle decays, thus representing a complementary approach to the direct searches performed at high energy hadron colliders. The upgraded SuperKEKB machine will collide electrons and positrons at the center-of-mass energy of excited states of the Y-particle, which hereafter decays to a B meson and its anti-particle. The decay vertices of these mesons have to be precisely measured by the Belle II SVD, together with the PXD (PiXel Detector) and the CDC (Central Drift Chamber). This allows the measurement of time-dependent, mixing-induced CP asymmetry. In addition, the SVD measures vertex information in other decay channels involving D meson and tau lepton decays. Since the collision energy is quite low (around 10 GeV), the emerging particles have low momentum and are subject to strong multiple scattering when traversing material. Therefore, all sensors of the Belle II SVD have to be optimised in terms of material thickness, while preserving high signal yield and position measurement accuracy. This will be possible by the development of thin, double-sided silicon microstrip sensors. This PhD thesis includes the physics motivation for

Surface Plasmon Enhanced Light Trapping in Metal/Silicon Nanobowl Arrays for Thin Film Photovoltaics

Directory of Open Access Journals (Sweden)

Ruinan Sun

2017-01-01

Full Text Available Enhancing the light absorption in thin film silicon solar cells with nanophotonic and plasmonic structures is important for the realization of high efficiency solar cells with significant cost reduction. In this work, we investigate periodic arrays of conformal metal/silicon nanobowl arrays (MSNBs for light trapping applications in silicon solar cells. They exhibited excellent light-harvesting ability across a wide range of wavelengths up to infrared regimes. The optimized structure (MSNBsH covered by SiO2 passivation layer and hemisphere Ag back reflection layer has a maximal short-circuit density (Jsc 25.5 mA/cm2, which is about 88.8% higher than flat structure counterpart, and the light-conversion efficiency (η is increased two times from 6.3% to 12.6%. The double-side textures offer a promising approach to high efficiency ultrathin silicon solar cells.

Strip defect recognition in electrical tests of silicon microstrip sensors

Energy Technology Data Exchange (ETDEWEB)

Valentan, Manfred, E-mail: valentan@mpp.mpg.de

2017-02-11

This contribution describes the measurement procedure and data analysis of AC-coupled double-sided silicon microstrip sensors with polysilicon resistor biasing. The most thorough test of a strip sensor is an electrical measurement of all strips of the sensor; the measured observables include e.g. the strip's current and the coupling capacitance. These measurements are performed to find defective strips, e.g. broken capacitors (pinholes) or implant shorts between two adjacent strips. When a strip has a defect, its observables will show a deviation from the “typical value”. To recognize and quantify certain defects, it is necessary to determine these typical values, i.e. the values the observables would have without the defect. As a novel approach, local least-median-of-squares linear fits are applied to determine these “would-be” values of the observables. A least-median-of-squares fit is robust against outliers, i.e. it ignores the observable values of defective strips. Knowing the typical values allows to recognize, distinguish and quantify a whole range of strip defects. This contribution explains how the various defects appear in the data and in which order the defects can be recognized. The method has been used to find strip defects on 30 double-sided trapezoidal microstrip sensors for the Belle II Silicon Vertex Detector, which have been measured at the Institute of High Energy Physics, Vienna (Austria).

Ion-implanted capacitively coupled silicon strip detectors with integrated polysilicon bias resistors processed on a 100 mm wafer

International Nuclear Information System (INIS)

Hietanen, I.; Lindgren, J.; Orava, R.; Tuuva, T.; Voutilainen, M.; Brenner, R.; Andersson, M.; Leinonen, K.; Ronkainen, H.

1991-01-01

Double-sided silicon strip detectors with integrated coupling capacitors and polysilicon resistors have been processed on a 100 mm wafer. A detector with an active area of 19x19 mm 2 was connected to LSI readout electronics and tested. The strip pitch of the detector is 25 μm on the p-side and 50 μm on the n-side. The readout pitch is 50 μm on both sides. The number of readout strips is 774 and the total number of strips is 1161. On the p-side a signal-to-noise of 35 has been measured using a 90 Sr β-source. The n-side has been studied using a laser. (orig.)

Design of LD in-band direct-pumping side surface polished micro-rod Nd:YVO4 laser

International Nuclear Information System (INIS)

Zhang Wen-Qi; Wang Fei; Liu Qiang; Gong Ma-Li

2016-01-01

To diminish the thermal load, two ways, that is, in-band direct pumping and micro-rod crystal, could be adopted at the same time. The efficiency of LD in-band direct-pumping side surface polished micro-rod Nd:YVO 4 laser is numerically analyzed. By optimizing parameters such as crystal length, laser mode radius, pump beam radius, doping concentration and crystal cross-section size, the overall efficiency can reach over 50%. It is found that with micro-rod crystal implemented in the laser oscillator, high overall efficiency LD in-band direct-pumping Nd:YVO 4 laser could be realized. High efficiency combined with low thermal load makes this laser an outstanding scheme for building high-power Nd:YVO 4 lasers. (paper)

Side-effects in ascending cervical myelography using iopamidol and metrizamide - a double blind study

International Nuclear Information System (INIS)

Bockenheimer, S.; Eichenlaub, H.

1986-01-01

A double blind study was performed to examine the side-effects of Metrizamide (group 1) and of Jopamidol (group 2) in ascending cervical myelography. Both groups were compared to a control group (group 3) comprising patients who had undergone lumbar puncture only. EEG was taken of the patients in groups 1 and 2 before as well as 6 and 24 h after intervention. Side-effects were collected by means of a questionnaire. Response time, concentration, memory and mood were examined psychometrically. Training effects or defensive attitudes in the multiple test examinations were checked against another control group of patients (group 4) which had no myelographic nor lumbar-puncture-induced impairment. Statistical findings corroborated our clinical impression that side-effects occurred after Metrizamide administration at a more than simply random rate. (orig.) [de

Analytical performances of laser-induced micro-plasma of Al samples with single and double ultrashort pulses in air and with Ar-jet: A comparative study

International Nuclear Information System (INIS)

Semerok, A.; Dutouquet, C.

2014-01-01

Ultrashort pulse laser microablation coupled with optical emission spectroscopy was under study to obtain several micro-LIBS analytical features (shot-to-shot reproducibility, spectral line intensity and lifetime, calibration curves, detection limits). Laser microablation of Al matrix samples with known Cu- and Mg-concentrations was performed by single and double pulses of 50 fs and 1 ps pulse duration in air and with Ar-jet. The micro-LIBS analytical features obtained under different experimental conditions were characterized and compared. The highest shot-to-shot reproducibility and gain in plasma spectral line intensity were obtained with double pulses with Ar-jet for both 50 fs and 1 ps pulse durations. The best calibration curves were obtained with 1 ps pulse duration with Ar-jet. Micro-LIBS with ultrashort double pulses may find its effective application for surface elemental microcartography. - Highlights: • Analytical performances of micro-LIBS with ultrashort double pulses were studied. • The maximal line intensity gain of 20 was obtained with double pulses and Ar-jet. • LIBS gain was obtained without additional ablation of a sample by the second pulse. • LIBS properties were almost the same for both 50 fs and 1 ps pulses. • The micro-LIBS detection limit was around 35 ppm

Power module packaging with double sided planar interconnection and heat exchangers

Science.gov (United States)

Liang, Zhenxian; Marlino, Laura D.; Ning, Puqi; Wang, Fei

2015-05-26

A double sided cooled power module package having a single phase leg topology includes two IGBT and two diode semiconductor dies. Each IGBT die is spaced apart from a diode semiconductor die, forming a switch unit. Two switch units are placed in a planar face-up and face-down configuration. A pair of DBC or other insulated metallic substrates is affixed to each side of the planar phase leg semiconductor dies to form a sandwich structure. Attachment layers are disposed on outer surfaces of the substrates and two heat exchangers are affixed to the substrates by rigid bond layers. The heat exchangers, made of copper or aluminum, have passages for carrying coolant. The power package is manufactured in a two-step assembly and heating process where direct bonds are formed for all bond layers by soldering, sintering, solid diffusion bonding or transient liquid diffusion bonding, with a specially designed jig and fixture.

Phase retrieval from reflective fringe patterns of double-sided transparent objects

International Nuclear Information System (INIS)

Huang, Lei; Asundi, Anand Krishna

2012-01-01

‘Ghosted’ fringe patterns simultaneously reflected from both the upper and lower sides of a transparent target in the fringe reflection technique are captured for transparent surface 3D shape measurement, but the phase retrieval from the captured ‘ghosted’ fringe patterns is still not solved. A novel method is proposed to solve this issue by using two sets of phase-shifted fringe patterns with slightly different frequencies. The nonlinear least-squares method is used to estimate the fringe phase and modulation from both front and rear interfaces. Several simulations are done to show the feasibility of the proposed method. The influence of fringe noise on the algorithm is studied as well, which indicates that the proposed method is able to retrieve the phase from double-sided reflective fringe patterns with fringe noise equivalent to that in practical measurements. The merits and limitations of the method are discussed and recommendations for future studies are made. (paper)

Enhanced cooling in mono-crystalline ultra-thin silicon by embedded micro-air channels

Directory of Open Access Journals (Sweden)

Mohamed T. Ghoneim

2015-12-01

Full Text Available In today’s digital world, complementary metal oxide semiconductor (CMOS technology enabled scaling of bulk mono-crystalline silicon (100 based electronics has resulted in their higher performance but with increased dynamic and off-state power consumption. Such trade-off has caused excessive heat generation which eventually drains the charge of battery in portable devices. The traditional solution utilizing off-chip fans and heat sinks used for heat management make the whole system bulky and less mobile. Here we show, an enhanced cooling phenomenon in ultra-thin (>10 μm mono-crystalline (100 silicon (detached from bulk substrate by utilizing deterministic pattern of porous network of vertical “through silicon” micro-air channels that offer remarkable heat and weight management for ultra-mobile electronics, in a cost effective way with 20× reduction in substrate weight and a 12% lower maximum temperature at sustained loads. We also show the effectiveness of this event in functional MOS field effect transistors (MOSFETs with high-κ/metal gate stacks.

Impact on energy requirements and emissions of heat pumps and micro-cogenerators participating in demand side management

International Nuclear Information System (INIS)

Cooper, Samuel J.G.; Hammond, Geoffrey P.; McManus, Marcelle C.; Rogers, John G.

2014-01-01

The potential impacts of participating in demand side management (DSM) on the performance of air source heat pumps (ASHP) and micro-combined heat and power (mCHP) units are considered by this study. As significant consumers and generators of electricity at the distribution level, large numbers of heat pumps and micro-cogenerators would provide considerable scope for participation in DSM systems. However, it is possible that operating regimes which are optimised for grid considerations will not achieve the maximum performance that is possible from the units. Modelling has been conducted to investigate the significance of this effect, considering the case where local distribution constraints are the main driver for demand side interventions. A model of domestic electrical demand has been adapted to consider a neighbourhood of 128 dwellings in order to identify when interventions are necessary. This has been combined with dynamic models of two combustion engine micro-cogenerators, a solid oxide fuel cell micro-cogenerator and two ASHPs. A simple thermal model of each building is combined with a range of user preferences in order to determine the preferred operating profiles of the heating units. The DSM scheme analysed here is likely to have minimal impact on the emissions and energy requirements associated with each heating unit. Its effect is similar to that which occurs without DSM if the control system gain is relaxed such that equivalent thermal comfort is achieved. DSM can reduce the peak electrical demand of the neighbourhood. However, in the scenarios investigated, it is unlikely that the peaks can be reduced sufficiently such that they do not exceed the capacity of the local distribution transformer if ASHPs are used in all dwellings. By using a combination of mCHP units with ASHPs, it is possible to supply heating to all dwellings without exceeding this capacity. In this case, the use of DSM can increase the ratio of ASHPs used. In the context of a low

Analysis and Design of Double-sided Air core Linear Servo Motor with Trapezoidal Permanent Magnets

DEFF Research Database (Denmark)

Zhang, Yuqiu; Yang, Zilong; Yu, Minghu

2011-01-01

In order to reduce the thrust ripple of linear servo system, a double-sided air core permanent magnet linear servo motor with trapezoidal shape permanent magnets (TDAPMLSM) is proposed in this paper. An analytical model of the motor for predicting the magnetic field in the air-gap at no...

The fabrication of a double-layer atom chip with through silicon vias for an ultra-high-vacuum cell

International Nuclear Information System (INIS)

Chuang, Ho-Chiao; Lin, Yun-Siang; Lin, Yu-Hsin; Huang, Chi-Sheng

2014-01-01

This study presents a double-layer atom chip that provides users with increased diversity in the design of the wire patterns and flexibility in the design of the magnetic field. It is more convenient for use in atomic physics experiments. A negative photoresist, SU-8, was used as the insulating layer between the upper and bottom copper wires. The electrical measurement results show that the upper and bottom wires with a width of 100 µm can sustain a 6 A current without burnout. Another focus of this study is the double-layer atom chips integrated with the through silicon via (TSV) technique, and anodically bonded to a Pyrex glass cell, which makes it a desired vacuum chamber for atomic physics experiments. Thus, the bonded glass cell not only significantly reduces the overall size of the ultra-high-vacuum (UHV) chamber but also conducts the high current from the backside to the front side of the atom chip via the TSV under UHV (9.5 × 10 −10  Torr). The TSVs with a diameter of 70 µm were etched through by the inductively coupled plasma ion etching and filled by the bottom-up copper electroplating method. During the anodic bonding process, the electroplated copper wires and TSVs on atom chips also need to pass the examination of the required bonding temperature of 250 °C, under an applied voltage of 1000 V. Finally, the UHV test of the double-layer atom chips with TSVs at room temperature can be reached at 9.5 × 10 −10  Torr, thus satisfying the requirements of atomic physics experiments under an UHV environment. (paper)

Formation of porous silicon oxide from substrate-bound silicon rich silicon oxide layers by continuous-wave laser irradiation

Science.gov (United States)

Wang, Nan; Fricke-Begemann, Th.; Peretzki, P.; Ihlemann, J.; Seibt, M.

2018-03-01

Silicon nanocrystals embedded in silicon oxide that show room temperature photoluminescence (PL) have great potential in silicon light emission applications. Nanocrystalline silicon particle formation by laser irradiation has the unique advantage of spatially controlled heating, which is compatible with modern silicon micro-fabrication technology. In this paper, we employ continuous wave laser irradiation to decompose substrate-bound silicon-rich silicon oxide films into crystalline silicon particles and silicon dioxide. The resulting microstructure is studied using transmission electron microscopy techniques with considerable emphasis on the formation and properties of laser damaged regions which typically quench room temperature PL from the nanoparticles. It is shown that such regions consist of an amorphous matrix with a composition similar to silicon dioxide which contains some nanometric silicon particles in addition to pores. A mechanism referred to as "selective silicon ablation" is proposed which consistently explains the experimental observations. Implications for the damage-free laser decomposition of silicon-rich silicon oxides and also for controlled production of porous silicon dioxide films are discussed.

Efficiency enhancement of silicon nanowire solar cells by using UV/Ozone treatments and micro-grid electrodes

Science.gov (United States)

Chen, Junyi; Subramani, Thiyagu; Sun, Yonglie; Jevasuwan, Wipakorn; Fukata, Naoki

2018-05-01

Silicon nanowire solar cells were fabricated by metal catalyzed electroless etching (MCEE) followed by thermal chemical vapor deposition (CVD). In this study, we investigated two effects, a UV/ozone treatment and the use of a micro-grid electrodes, to enhance light absorption and reduce the optic losses in the solar cell device. The UV/ozone treatment successfully improved the conversion efficiency. The micro-grid electrodes were then applied in solar cell devices subjected to a back surface field (BSF) treatment and rapid thermal annealing (RTA). These effects improved the conversion efficiency from 9.4% to 10.9%. Moreover, to reduce surface recombination and improve the continuity of front electrodes, we optimized the etching time of the MCEE process, giving a high efficiency of 12.3%.

The LHCb Silicon Tracker

Energy Technology Data Exchange (ETDEWEB)

Tobin, Mark, E-mail: Mark.Tobin@epfl.ch

2016-09-21

The LHCb experiment is dedicated to the study of heavy flavour physics at the Large Hadron Collider (LHC). The primary goal of the experiment is to search for indirect evidence of new physics via measurements of CP violation and rare decays of beauty and charm hadrons. The LHCb detector has a large-area silicon micro-strip detector located upstream of a dipole magnet, and three tracking stations with silicon micro-strip detectors in the innermost region downstream of the magnet. These two sub-detectors form the LHCb Silicon Tracker (ST). This paper gives an overview of the performance and operation of the ST during LHC Run 1. Measurements of the observed radiation damage are shown and compared to the expectation from simulation.

Application of a Gradient Descent Continuous Actor-Critic Algorithm for Double-Side Day-Ahead Electricity Market Modeling

Directory of Open Access Journals (Sweden)

Huiru Zhao

2016-09-01

Full Text Available An important goal of China’s electric power system reform is to create a double-side day-ahead wholesale electricity market in the future, where the suppliers (represented by GenCOs and demanders (represented by DisCOs compete simultaneously with each other in one market. Therefore, modeling and simulating the dynamic bidding process and the equilibrium in the double-side day-ahead electricity market scientifically is not only important to some developed countries, but also to China to provide a bidding decision-making tool to help GenCOs and DisCOs obtain more profits in market competition. Meanwhile, it can also provide an economic analysis tool to help government officials design the proper market mechanisms and policies. The traditional dynamic game model and table-based reinforcement learning algorithm have already been employed in the day-ahead electricity market modeling. However, those models are based on some assumptions, such as taking the probability distribution function of market clearing price (MCP and each rival’s bidding strategy as common knowledge (in dynamic game market models, and assuming the discrete state and action sets of every agent (in table-based reinforcement learning market models, which are no longer applicable in a realistic situation. In this paper, a modified reinforcement learning method, called gradient descent continuous Actor-Critic (GDCAC algorithm was employed in the double-side day-ahead electricity market modeling and simulation. This algorithm can not only get rid of the abovementioned unrealistic assumptions, but also cope with the Markov decision-making process with continuous state and action sets just like the real electricity market. Meanwhile, the time complexity of our proposed model is only O(n. The simulation result of employing the proposed model in the double-side day-ahead electricity market shows the superiority of our approach in terms of participant’s profit or social welfare

Endodontic treatment and esthetic management of a primary double tooth with direct composite using silicone buildup guide

Directory of Open Access Journals (Sweden)

Vinaya Kumar Kulkarni

2012-01-01

Full Text Available Gemination and fusion are morphological dental anomalies, characterized by the formation of a clinically wide tooth. Gemination occurs when one tooth bud tries to divide, while fusion occurs if two buds unite. The terms double teeth, double formation, conjoined teeth, geminifusion, vicinifusion and dental twinning are often used to describe fusion and gemination. Double teeth are associated with clinical problems such as poor esthetics, spacing problems and caries susceptibility. Management of such cases requires a comprehensive knowledge of the clinical entity as well as the problems associated with it. This report presents a case of primary double tooth in a 6-year-old boy involving maxillary left central incisor. The anomalous tooth was carious and pulpally involved. This was treated conservatively by endodontic treatment and esthetic rehabilitation was done with direct composite restoration using a silicone buildup guide. The treated tooth was followed up until exfoliation.

Modification of silicon nitride and silicon carbide surfaces for food and biosensor applications

NARCIS (Netherlands)

Rosso, M.

2009-01-01

Silicon-rich silicon nitride (SixN4, x > 3) is a robust insulating material widely used for the coating of microdevices: its high chemical and mechanical inertness make it a material of choice for the reinforcement of fragile microstructures (e.g. suspended microcantilevers, micro-fabricated

DOUBLE BOSS SCULPTURED DIAPHRAGM EMPLOYED PIEZORESISTIVE MEMS PRESSURE SENSOR WITH SILICON-ON-INSULATOR (SOI

Directory of Open Access Journals (Sweden)

D. SINDHANAISELVI

2017-07-01

Full Text Available This paper presents the detailed study on the measurement of low pressure sensor using double boss sculptured diaphragm of piezoresistive type with MEMS technology in flash flood level measurement. The MEMS based very thin diaphragms to sense the low pressure is analyzed by introducing supports to achieve linearity. The simulation results obtained from Intellisuite MEMS CAD design tool show that very thin diaphragms with rigid centre or boss give acceptable linearity. Further investigations on very thin diaphragms embedded with piezoresistor for low pressure measurement show that it is essential to analyse the piezoresistor placement and size of piezoresistor to achieve good sensitivity. A modified analytical modelling developed in this study for double boss sculptured diaphragm results were compared with simulated results. Further the enhancement of sensitivity is analyzed using non uniform thickness diaphragm and Silicon-On-Insulator (SOI technique. The simulation results indicate that the double boss square sculptured diaphragm with SOI layer using 0.85μm thickness yields the higher voltage sensitivity, acceptable linearity with Small Scale Deflection.

Establishment and analysis of coupled dynamic model for dual-mass silicon micro-gyroscope

Science.gov (United States)

Wang, Zhanghui; Qiu, Anping; Shi, Qin; Zhang, Taoyuan

2017-12-01

This paper presents a coupled dynamic model for a dual-mass silicon micro-gyroscope (DMSG). It can quantitatively analyze the influence of left-right stiffness difference on the natural frequencies, modal matrix and modal coupling coefficient of the DMSG. The analytic results are verified by using the finite element method (FEM) simulation. The model shows that with the left-right stiffness difference of 1%, the modal coupling coefficient is 12% in the driving direction and 31% in the sensing direction. It also shows that in order to achieve good separation, the stiffness of base beam should be small enough in both the driving and sensing direction.

Preliminary Study on Biosynthesis of Bacterial Nanocellulose Tubes in a Novel Double-Silicone-Tube Bioreactor for Potential Vascular Prosthesis

Directory of Open Access Journals (Sweden)

Feng Hong

2015-01-01

Full Text Available Bacterial nanocellulose (BNC has demonstrated a tempting prospect for applications in substitute of small blood vessels. However, present technology is inefficient in production and BNC tubes have a layered structure that may bring danger after implanting. Double oxygen-permeable silicone tubes in different diameters were therefore used as a tube-shape mold and also as oxygenated supports to construct a novel bioreactor for production of the tubular BNC materials. Double cannula technology was used to produce tubular BNC via cultivations with Acetobacter xylinum, and Kombucha, a symbiosis of acetic acid bacteria and yeasts. The results indicated that Kombucha gave higher yield and productivity of BNC than A. xylinum. Bacterial nanocellulose was simultaneously synthesized both on the inner surface of the outer silicone tube and on the outer surface of the inner silicone tube. Finally, the nano BNC fibrils from two directions formed a BNC tube with good structural integrity. Scanning electron microscopy inspection showed that the tubular BNC had a multilayer structure in the beginning but finally it disappeared and an intact BNC tube formed. The mechanical properties of BNC tubes were comparable with the reported value in literatures, demonstrating a great potential in vascular implants or in functional substitutes in biomedicine.

Preliminary Study on Biosynthesis of Bacterial Nanocellulose Tubes in a Novel Double-Silicone-Tube Bioreactor for Potential Vascular Prosthesis.

Science.gov (United States)

Hong, Feng; Wei, Bin; Chen, Lin

2015-01-01

Bacterial nanocellulose (BNC) has demonstrated a tempting prospect for applications in substitute of small blood vessels. However, present technology is inefficient in production and BNC tubes have a layered structure that may bring danger after implanting. Double oxygen-permeable silicone tubes in different diameters were therefore used as a tube-shape mold and also as oxygenated supports to construct a novel bioreactor for production of the tubular BNC materials. Double cannula technology was used to produce tubular BNC via cultivations with Acetobacter xylinum, and Kombucha, a symbiosis of acetic acid bacteria and yeasts. The results indicated that Kombucha gave higher yield and productivity of BNC than A. xylinum. Bacterial nanocellulose was simultaneously synthesized both on the inner surface of the outer silicone tube and on the outer surface of the inner silicone tube. Finally, the nano BNC fibrils from two directions formed a BNC tube with good structural integrity. Scanning electron microscopy inspection showed that the tubular BNC had a multilayer structure in the beginning but finally it disappeared and an intact BNC tube formed. The mechanical properties of BNC tubes were comparable with the reported value in literatures, demonstrating a great potential in vascular implants or in functional substitutes in biomedicine.

Preliminary Study on Biosynthesis of Bacterial Nanocellulose Tubes in a Novel Double-Silicone-Tube Bioreactor for Potential Vascular Prosthesis

Science.gov (United States)

Wei, Bin; Chen, Lin

2015-01-01

Bacterial nanocellulose (BNC) has demonstrated a tempting prospect for applications in substitute of small blood vessels. However, present technology is inefficient in production and BNC tubes have a layered structure that may bring danger after implanting. Double oxygen-permeable silicone tubes in different diameters were therefore used as a tube-shape mold and also as oxygenated supports to construct a novel bioreactor for production of the tubular BNC materials. Double cannula technology was used to produce tubular BNC via cultivations with Acetobacter xylinum, and Kombucha, a symbiosis of acetic acid bacteria and yeasts. The results indicated that Kombucha gave higher yield and productivity of BNC than A. xylinum. Bacterial nanocellulose was simultaneously synthesized both on the inner surface of the outer silicone tube and on the outer surface of the inner silicone tube. Finally, the nano BNC fibrils from two directions formed a BNC tube with good structural integrity. Scanning electron microscopy inspection showed that the tubular BNC had a multilayer structure in the beginning but finally it disappeared and an intact BNC tube formed. The mechanical properties of BNC tubes were comparable with the reported value in literatures, demonstrating a great potential in vascular implants or in functional substitutes in biomedicine. PMID:26090420

Electrochemical trench etching of silicon triggered via mechanical nanocontacts

Energy Technology Data Exchange (ETDEWEB)

Gassilloud, R.; Michler, J. [EMPA, Materials Science and Technology, Feuerwerkerstrasse 39, CH-3602 Thun (Switzerland); Schmuki, P. [Department of Materials Science, LKO, University of Erlangen-Nuernberg, Martensstrasse 7, D-91058 Erlangen (Germany)

2007-12-01

We report a method to produce microstructures on silicon wafers using a microscratching technique followed by a subsequent electrochemical trench etching in hydrofluoric-based electrolyte. Micro-scratches are used to trigger macropore formation. We show that mask-less dissolved trenches with aspect ratios up to 1:7 are formed at the scratched regions on (0 0 1)Si surface. The micro-scratches orientate the macropores formation by aligning them in the scratching direction. We propose that dislocations formed during scratching are firstly dissolved leading to the formation of V-shape grooves. The V-shape geometries obtained by this way are used to initiate the macropores nucleation; i.e. due to the geometry, an avalanche current occurs at the grooves base and thus induces local dissolutions of the substrate. High rate local dissolutions are achieved by back-side illumination of the Si wafer. (author)

Experimental investigation on material migration phenomena in micro-EDM of reaction-bonded silicon carbide

Energy Technology Data Exchange (ETDEWEB)

Liew, Pay Jun [Department of Mechanical Systems and Design, Tohoku University, Aramaki Aoba 6-6-01, Aoba-ku, Sendai, 980-8579 (Japan); Manufacturing Process Department, Faculty of Manufacturing Engineering, Universiti Teknikal Malaysia Melaka, Hang Tuah Jaya, 76100, Durian Tunggal, Melaka (Malaysia); Yan, Jiwang, E-mail: yan@mech.keio.ac.jp [Department of Mechanical Engineering, Faculty of Science and Technology, Keio University, Hiyoshi 3-14-1, Kohoku-ku, Yokohama, 223-8522 (Japan); Kuriyagawa, Tsunemoto [Department of Mechanical Systems and Design, Tohoku University, Aramaki Aoba 6-6-01, Aoba-ku, Sendai, 980-8579 (Japan)

2013-07-01

Material migration between tool electrode and workpiece material in micro electrical discharge machining of reaction-bonded silicon carbide was experimentally investigated. The microstructural changes of workpiece and tungsten tool electrode were examined using scanning electron microscopy, cross sectional transmission electron microscopy and energy dispersive X-ray under various voltage, capacitance and carbon nanofibre concentration in the dielectric fluid. Results show that tungsten is deposited intensively inside the discharge-induced craters on the RB-SiC surface as amorphous structure forming micro particles, and on flat surface region as a thin interdiffusion layer of poly-crystalline structure. Deposition of carbon element on tool electrode was detected, indicating possible material migration to the tool electrode from workpiece material, carbon nanofibres and dielectric oil. Material deposition rate was found to be strongly affected by workpiece surface roughness, voltage and capacitance of the electrical discharge circuit. Carbon nanofibre addition in the dielectric at a suitable concentration significantly reduced the material deposition rate.

Experimental investigation on material migration phenomena in micro-EDM of reaction-bonded silicon carbide

International Nuclear Information System (INIS)

Liew, Pay Jun; Yan, Jiwang; Kuriyagawa, Tsunemoto

2013-01-01

Material migration between tool electrode and workpiece material in micro electrical discharge machining of reaction-bonded silicon carbide was experimentally investigated. The microstructural changes of workpiece and tungsten tool electrode were examined using scanning electron microscopy, cross sectional transmission electron microscopy and energy dispersive X-ray under various voltage, capacitance and carbon nanofibre concentration in the dielectric fluid. Results show that tungsten is deposited intensively inside the discharge-induced craters on the RB-SiC surface as amorphous structure forming micro particles, and on flat surface region as a thin interdiffusion layer of poly-crystalline structure. Deposition of carbon element on tool electrode was detected, indicating possible material migration to the tool electrode from workpiece material, carbon nanofibres and dielectric oil. Material deposition rate was found to be strongly affected by workpiece surface roughness, voltage and capacitance of the electrical discharge circuit. Carbon nanofibre addition in the dielectric at a suitable concentration significantly reduced the material deposition rate.

Uniform nano-ripples on the sidewall of silicon carbide micro-hole fabricated by femtosecond laser irradiation and acid etching

Energy Technology Data Exchange (ETDEWEB)

Khuat, Vanthanh [Key Laboratory for Physical Electronics and Devices of the Ministry of Education and Collaborative Innovation Center of Suzhou Nano Science and Technology, School of Electronics and Information Engineering, Xi' an Jiaotong University, No. 28, Xianning West Road, Xi' an 710049 (China); Le Quy Don Technical University, No. 100, Hoang Quoc Viet Street, Hanoi 7EN-248 (Viet Nam); Chen, Tao; Gao, Bo; Si, Jinhai, E-mail: jinhaisi@mail.xjtu.edu.cn; Ma, Yuncan; Hou, Xun [Key Laboratory for Physical Electronics and Devices of the Ministry of Education and Collaborative Innovation Center of Suzhou Nano Science and Technology, School of Electronics and Information Engineering, Xi' an Jiaotong University, No. 28, Xianning West Road, Xi' an 710049 (China)

2014-06-16

Uniform nano-ripples were observed on the sidewall of micro-holes in silicon carbide fabricated by 800-nm femtosecond laser and chemical selective etching. The morphology of the ripple was analyzed using scanning electronic microscopy. The formation mechanism of the micro-holes was attributed to the chemical reaction of the laser affected zone with mixed solution of hydrofluoric acid and nitric acid. The formation of nano-ripples on the sidewall of the holes could be attributed to the standing wave generated in z direction due to the interference between the incident wave and the reflected wave.

Preparation of micro-porous bioceramic containing silicon-substituted hydroxyapatite and beta-tricalcium phosphate.

Science.gov (United States)

Fuh, Lih-Jyh; Huang, Ya-Jing; Chen, Wen-Cheng; Lin, Dan-Jae

2017-06-01

Dimensional instability caused by sintering shrinkage is an inevitable drawback for conventional processing of hydroxyapatite (HA). A new preparation method for biphasic calcium phosphates was developed to increase micro pores and biodegradation without significant dimensional change. Powder pressed HA discs, under 100MPa, were immersed in a colloidal mixture of tetraethoxysilane (TEOS) and ammonium hydroxide for 10min, followed by drying, and then were sintered at 900°C, 1050°C, and 1200°C, respectively. Comparing with pure HA discs, the newly prepared product sintered up to 1200°C contained silicon substituted HA, beta-tricalcium phosphate, and calcium silicate with better micro-porosity, high specific surface area, less sintering shrinkage and the strength maintained. The cytocompatibility test demonstrated a better viability for D1 mice stem cells cultured on TEOS treated HA for 14days compared to the pure HA. This simple TEOS sol-gel pretreatment has the potential to be applied to any existing manufacturing process of HA scaffold for better control of sintering shrinkage, create micropores, and increase biodegradation. Copyright © 2017 Elsevier B.V. All rights reserved.

Flat-top passband filter based on parallel-coupled double microring resonators in silicon

Science.gov (United States)

Huang, Qingzhong; Xiao, Xi; Li, Yuntao; Li, Zhiyong; Yu, Yude; Yu, Jinzhong

2009-08-01

Optical filters with box-like response were designed and realized based on parallel-coupled double microrings in silicon-on-insulator. The properties of this design are simulated, considering the impact of the center-to-center distance of two rings, and coupling efficiency. Flat-top passband in the drop channel of the fabricated device was demonstrated with a 1dB bandwidth of 0.82nm, a 1dB/10dB bandwidth ratio of 0.51, an out of band rejection ratio of 14.6dB, as well as a free spectrum range of 13.6nm.

Antihydrogen annihilation reconstruction with the ALPHA silicon detector

Energy Technology Data Exchange (ETDEWEB)

Andresen, G.B. [Department of Physics and Astronomy, Aarhus University, DK-8000 Aarhus C (Denmark); Ashkezari, M.D. [Department of Physics, Simon Fraser University, Burnaby, BC, Canada V5A 1S6 (Canada); Bertsche, W. [Department of Physics, Swansea University, Swansea SA2 8PP (United Kingdom); Bowe, P.D. [Department of Physics and Astronomy, Aarhus University, DK-8000 Aarhus C (Denmark); Butler, E. [European Laboratory for Particle Physics, CERN, CH-1211 Geneva 23 (Switzerland); Cesar, C.L. [Instituto de Fisica, Universidade Federal do Rio de Janeiro, Rio de Janeiro 21941-972 (Brazil); Chapman, S. [Department of Physics, University of California, Berkeley, CA 94720-7300 (United States); Charlton, M.; Deller, A.; Eriksson, S. [Department of Physics, Swansea University, Swansea SA2 8PP (United Kingdom); Fajans, J. [Department of Physics, University of California, Berkeley, CA 94720-7300 (United States); Friesen, T. [Department of Physics and Astronomy, University of Calgary, Calgary, AB, Canada T2N 1N4 (Canada); Fujiwara, M.C. [TRIUMF, 4004 Wesbrook Mall, Vancouver, BC, Canada V6T 2A3 (Canada); Department of Physics and Astronomy, University of Calgary, Calgary, AB, Canada T2N 1N4 (Canada); Gill, D.R. [TRIUMF, 4004 Wesbrook Mall, Vancouver, BC, Canada V6T 2A3 (Canada); Gutierrez, A. [Department of Physics and Astronomy, University of British Columbia, Vancouver, BC, Canada V6T 1Z4 (Canada); Hangst, J.S. [Department of Physics and Astronomy, Aarhus University, DK-8000 Aarhus C (Denmark); Hardy, W.N. [Department of Physics and Astronomy, University of British Columbia, Vancouver, BC, Canada V6T 1Z4 (Canada); Hayden, M.E. [Department of Physics, Simon Fraser University, Burnaby, BC, Canada V5A 1S6 (Canada); Hayano, R.S. [Department of Physics, University of Tokyo, Tokyo 113-0033 (Japan); Humphries, A.J. [Department of Physics, Swansea University, Swansea SA2 8PP (United Kingdom); and others

2012-08-21

The ALPHA experiment has succeeded in trapping antihydrogen, a major milestone on the road to spectroscopic comparisons of antihydrogen with hydrogen. An annihilation vertex detector, which determines the time and position of antiproton annihilations, has been central to this achievement. This detector, an array of double-sided silicon microstrip detector modules arranged in three concentric cylindrical tiers, is sensitive to the passage of charged particles resulting from antiproton annihilation. This article describes the method used to reconstruct the annihilation location and to distinguish the annihilation signal from the cosmic ray background. Recent experimental results using this detector are outlined.

Antihydrogen annihilation reconstruction with the ALPHA silicon detector

CERN Document Server

Andresen, G B; Bertsche, W; Bowe, P D; Butler, E; Cesar, C L; Chapman, S; Charlton, M; Deller, A; Eriksson, S; Fajans, J; Friesen, T; Fujiwara, M C; Gill, D.R; Gutierrez, A; Hangst, J S; Hardy, W N; Hayden, M E; Hayano, R S; Humphries, A J; Hydomako, R; Jonsell, S; Jorgensen, L V; Kurchaninov, L; Madsen, N; Menary, S; Nolan, P; Olchanski, K; Olin, A; Povilus, A; Pusa, P; Sarid, E; Seif el Nasr, S; Silveira, D M; So, C; Storey, J W; Thompson, R I; van der Werf, D P; Yamazaki, Y

2012-01-01

The ALPHA experiment has succeeded in trapping antihydrogen, a major milestone on the road to spectroscopic comparisons of antihydrogen with hydrogen. An annihilation vertex detector, which determines the time and position of antiproton annihilations, has been central to this achievement. This detector, an array of double-sided silicon microstrip detector modules arranged in three concentric cylindrical tiers, is sensitive to the passage of charged particles resulting from antiproton annihilation. This article describes the method used to reconstruct the annihilation location and to distinguish the annihilation signal from the cosmic ray background. Recent experimental results using this detector are outlined.

Electronics and mechanics for the Silicon Vertex Detector of the Belle II experiment

Energy Technology Data Exchange (ETDEWEB)

Irmler, C; Bergauer, T; Friedl, M; Gfall, I; Valentan, M, E-mail: irmler@hephy.oeaw.ac.a [Institute of High Energy Physics, Austrian Academy of Sciences, Nikolsdorfer Gasse 18, A-1050 Vienna (Austria)

2010-12-15

A major upgrade of the KEK-B factory (Tsukuba, Japan), aiming at a peak luminosity of 8 x 10{sup 35}cm{sup -2}s{sup -1}, which is 40 times the present value, is foreseen until 2014. Consequently an upgrade of the Belle detector and in particular its Silicon Vertex Detector (SVD) is required. We will introduce the concept and prototypes of the full readout chain of the Belle II SVD. Its APV25 based front-end utilizes the Origami chip-on-sensor concept, while the back-end VME system provides online data processing as well as hit time finding using FPGAs. Furthermore, the design of the double-sided silicon detectors and the mechanics will be discussed.

Analysis of materials modifications caused by UV laser micro drilling of via holes in AlGaN/GaN transistors on SiC

Energy Technology Data Exchange (ETDEWEB)

Wernicke, Tim [Ferdinand-Braun-Institut fuer Hoechstfrequenztechnik, Gustav-Kirchhoff-Str. 4, 12489 Berlin (Germany)]. E-mail: tim.wernicke@fbh-berlin.de; Krueger, Olaf [Ferdinand-Braun-Institut fuer Hoechstfrequenztechnik, Gustav-Kirchhoff-Str. 4, 12489 Berlin (Germany); Herms, Martin [Ferdinand-Braun-Institut fuer Hoechstfrequenztechnik, Gustav-Kirchhoff-Str. 4, 12489 Berlin (Germany); Wuerfl, Joachim [Ferdinand-Braun-Institut fuer Hoechstfrequenztechnik, Gustav-Kirchhoff-Str. 4, 12489 Berlin (Germany); Kirmse, Holm [Humboldt-Universitaet zu Berlin, Institut fuer Physik, AG Kristallographie, Newtonstr. 15, 12489 Berlin (Germany); Neumann, Wolfgang [Humboldt-Universitaet zu Berlin, Institut fuer Physik, AG Kristallographie, Newtonstr. 15, 12489 Berlin (Germany); Behm, Thomas [Technische Universitaet Bergakademie Freiberg, Institut fuer Theoretische Physik, Bernhard-von-Cotta-Str. 4, 09596 Freiberg (Germany); Irmer, Gert [Technische Universitaet Bergakademie Freiberg, Institut fuer Theoretische Physik, Bernhard-von-Cotta-Str. 4, 09596 Freiberg (Germany); Traenkle, Guenther [Ferdinand-Braun-Institut fuer Hoechstfrequenztechnik, Gustav-Kirchhoff-Str. 4, 12489 Berlin (Germany)

2007-07-31

Pulsed UV laser drilling can be applied to fabricate vertical electrical interconnects (vias) for AlGaN/GaN high electron mobility transistor devices on single-crystalline silicon carbide (SiC) substrate. Through-wafer micro holes with a diameter of 50-100 {mu}m were formed in 400 {mu}m thick bulk 4H-SiC by a frequency-tripled solid-state laser (355 nm) with a pulse width of {<=}30 ns and a focal spot size of {approx}15 {mu}m. The impact of laser machining on the material system in the vicinity of micro holes was investigated by means of micro-Raman spectroscopy and transmission electron microscopy. After removing the loosely deposited debris by etching in buffered hydrofluoric acid, a layer of <4 {mu}m resolidified material remains at the side walls of the holes. The thickness of the resolidified layer depends on the vertical distance to the hole entry as observed by scanning electron microscopy. Micro-Raman spectra indicate a change of internal strain due to laser drilling and evidence the formation of nanocrystalline silicon (Si). Microstructure analysis of the vias' side walls using cross sectional TEM reveals altered degree of crystallinity in SiC. Layers of heavily disturbed SiC, and nanocrystalline Si are formed by laser irradiation. The layers are separated by 50-100 nm thick interface regions. No evidence of extended defects, micro cracking or crystal damage was found beneath the resolidified layer. The precision of UV laser micro ablation of SiC using nanosecond pulses is not limited by laser-induced extended crystal defects.

Porous silicon: X-rays sensitivity

International Nuclear Information System (INIS)

Gerstenmayer, J.L.; Vibert, Patrick; Mercier, Patrick; Rayer, Claude; Hyvernage, Michel; Herino, Roland; Bsiesy, Ahmad

1994-01-01

We demonstrate that high porosity anodically porous silicon is radioluminescent. Interests of this study are double. Firstly: is the construction of porous silicon X-rays detectors (imagers) possible? Secondly: is it necessary to protect silicon porous based optoelectronic systems from ionising radiations effects (spatial environment)? ((orig.))

Is the side with the best masticatory performance selected for chewing?

Science.gov (United States)

Rovira-Lastra, Bernat; Flores-Orozco, Elan Ignacio; Salsench, Juan; Peraire, Maria; Martinez-Gomis, Jordi

2014-12-01

This study assessed the degree of relationship between masticatory laterality and lateral asymmetry of masticatory performance using silicon pieces enclosed in a latex bag. Forty-two young adults with natural dentition participated in this cross-sectional, observational study. They performed four different masticatory assays, each consisting of five trials of chewing three pieces of silicon for 20 cycles. In one assay, they were asked to masticate unbagged silicon free-style, whilst in the three other assays they were asked to masticate bagged silicon free-style, unilaterally on the right-hand side and unilaterally on the left-hand side. The preferred chewing side was determined by calculating the asymmetry index for both the free-style assays. Masticatory performance was determined by sieving the silicon particles and the cycle duration was also recorded. Data were analysed using independent samples or paired t-test and linear regression. Masticatory function using the bagged silicon was similar to that using the unbagged silicon. A significant and positive relationship was observed between the preferred chewing side expressed as the asymmetry index and the side with better masticatory performance. Alternate unilateral chewers demonstrated better masticatory performance than unilateral chewers. However, when free-style and unilateral chewing were compared for each subject, unilateral chewing was found to be as efficient as - or even more efficient than - free-style chewing. There is a positive association between the preferred chewing side and the more efficient side. Alternate unilateral mastication per se does not promote better masticatory performance than consistently unilateral mastication. Copyright © 2014 Elsevier Ltd. All rights reserved.

Self-assembly of micro- and nano-scale particles using bio-inspired events

International Nuclear Information System (INIS)

McNally, H.; Pingle, M.; Lee, S.W.; Guo, D.; Bergstrom, D.E.; Bashir, R.

2003-01-01

High sensitivity chemical and biological detection techniques and the development of future electronic systems can greatly benefit from self-assembly processes and techniques. We have approached this challenge using biologically inspired events such as the hybridization of single (ss)- to double-stranded (ds) DNA and the strong affinity between the protein avidin and its associated Vitamin, biotin. Using these molecules, micro-scale polystyrene beads and nano-scale gold particles were assembled with high efficiency on gold patterns and the procedures used for these processes were optimized. The DNA and avidin-biotin complex was also used to demonstrate the attachment of micro-scale silicon islands to each other in a fluid. This work also provides insight into the techniques for the self-assembly of heterogeneous materials

Study of condensation of refrigerants in a micro-channel for development of future compact micro-channel condensers

Science.gov (United States)

Chowdhury, Sourav

2009-12-01

Mini- and micro-channel technology has gained considerable ground in the recent years in industry and is favored due to its several advantages stemming from its high surface to volume ratio and high values of proof pressure it can withstand. Micro-channel technology has paved the way to development of highly compact heat exchangers with low cost and mass penalties. In the present work, the issues related to the sizing of compact micro-channel condensers have been explored. The considered designs encompass both the conventional and MEMS fabrication techniques. In case of MEMS-fabricated micro-channel condenser, wet etching of the micro-channel structures, followed by bonding of two such wafers with silicon nitride layers at the interface was attempted. It was concluded that the silicon nitride bonding requires great care in terms of high degree of surface flatness and absence of roughness and also high degree of surface purity and thus cannot be recommended for mass fabrication. Following this investigation, a carefully prepared experimental setup and test micro-channel with hydraulic diameter 700 mum and aspect ratio 7:1 was fabricated and overall heat transfer and pressure drop aspects of two condensing refrigerants, R134a and R245fa were studied at a variety of test conditions. To the best of author's knowledge, so far no data has been reported in the literature on condensation in such high aspect ratio micro-channels. Most of the published experimental works on condensation of refrigerants are concerning conventional hydraulic diameter channels (> 3mm) and only recently some experimental data has been reported in the sub-millimeter scale channels for which the surface tension and viscosity effects play a dominant role and the effect of gravity is diminished. It is found that both experimental data and empirically-derived correlations tend to under-predict the present data by an average of 25%. The reason for this deviation could be because a high aspect ratio

Fabrication of double-sided thallium bromide strip detectors

Energy Technology Data Exchange (ETDEWEB)

Hitomi, Keitaro, E-mail: keitaro.hitomi@qse.tohoku.ac.jp [Department of Quantum Science and Energy Engineering, Graduate School of Engineering, Tohoku University, Sendai 980-8579 (Japan); Nagano, Nobumichi [Department of Quantum Science and Energy Engineering, Graduate School of Engineering, Tohoku University, Sendai 980-8579 (Japan); Onodera, Toshiyuki [Department of Electronics and Intelligent Systems, Tohoku Institute of Technology, Sendai 982-8577 (Japan); Kim, Seong-Yun; Ito, Tatsuya; Ishii, Keizo [Department of Quantum Science and Energy Engineering, Graduate School of Engineering, Tohoku University, Sendai 980-8579 (Japan)

2016-07-01

Double-sided strip detectors were fabricated from thallium bromide (TlBr) crystals grown by the traveling-molten zone method using zone-purified materials. The detectors had three 3.4-mm-long strips with 1-mm widths and a surrounding electrode placed orthogonally on opposite surfaces of the crystals at approximately 6.5×6.5 mm{sup 2} in area and 5 mm in thickness. Excellent charge transport properties for both electrons and holes were observed from the TlBr crystals. The mobility-lifetime products for electrons and holes in the detector were measured to be ~3×10{sup −3} cm{sup 2}/V and ~1×10{sup −3} cm{sup 2}/V, respectively. The {sup 137}Cs spectra corresponding to the gamma-ray interaction position were obtained from the detector. An energy resolution of 3.4% of full width at half maximum for 662-keV gamma rays was obtained from one “pixel” (an intersection of the strips) of the detector at room temperature.

Field oxide radiation damage measurements in silicon strip detectors

Energy Technology Data Exchange (ETDEWEB)

Laakso, M [Particle Detector Group, Fermilab, Batavia, IL (United States) Research Inst. for High Energy Physics (SEFT), Helsinki (Finland); Singh, P; Shepard, P F [Dept. of Physics and Astronomy, Univ. Pittsburgh, PA (United States)

1993-04-01

Surface radiation damage in planar processed silicon detectors is caused by radiation generated holes being trapped in the silicon dioxide layers on the detector wafer. We have studied charge trapping in thick (field) oxide layers on detector wafers by irradiating FOXFET biased strip detectors and MOS test capacitors. Special emphasis was put on studying how a negative bias voltage across the oxide during irradiation affects hole trapping. In addition to FOXFET biased detectors, negatively biased field oxide layers may exist on the n-side of double-sided strip detectors with field plate based n-strip separation. The results indicate that charge trapping occurred both close to the Si-SiO[sub 2] interface and in the bulk of the oxide. The charge trapped in the bulk was found to modify the electric field in the oxide in a way that leads to saturation in the amount of charge trapped in the bulk when the flatband/threshold voltage shift equals the voltage applied over the oxide during irradiation. After irradiation only charge trapped close to the interface is annealed by electrons tunneling to the oxide from the n-type bulk. (orig.).

Technology of silicon charged-particle detectors developed at the Institute of Electron Technology (ITE)

Science.gov (United States)

Wegrzecka, Iwona; Panas, Andrzej; Bar, Jan; Budzyński, Tadeusz; Grabiec, Piotr; Kozłowski, Roman; Sarnecki, Jerzy; Słysz, Wojciech; Szmigiel, Dariusz; Wegrzecki, Maciej; Zaborowski, Michał

2013-07-01

The paper discusses the technology of silicon charged-particle detectors developed at the Institute of Electron Technology (ITE). The developed technology enables the fabrication of both planar and epiplanar p+-ν-n+ detector structures with an active area of up to 50 cm2. The starting material for epiplanar structures are silicon wafers with a high-resistivity n-type epitaxial layer ( ν layer - ρ < 3 kΩcm) deposited on a highly doped n+-type substrate (ρ< 0,02Ωcm) developed and fabricated at the Institute of Electronic Materials Technology. Active layer thickness of the epiplanar detectors (νlayer) may range from 10 μm to 150 μm. Imported silicon with min. 5 kΩcm resistivity is used to fabricate planar detectors. Active layer thickness of the planar detectors (ν) layer) may range from 200 μm to 1 mm. This technology enables the fabrication of both discrete and multi-junction detectors (monolithic detector arrays), such as single-sided strip detectors (epiplanar and planar) and double-sided strip detectors (planar). Examples of process diagrams for fabrication of the epiplanar and planar detectors are presented in the paper, and selected technological processes are discussed.

A new detector concept for silicon photomultipliers

Energy Technology Data Exchange (ETDEWEB)

Sadigov, A., E-mail: saazik@yandex.ru [National Nuclear Research Center, Baku (Azerbaijan); Ahmadov, F.; Ahmadov, G. [National Nuclear Research Center, Baku (Azerbaijan); Ariffin, A.; Khorev, S. [Zecotek Photonics Inc., Vancouver (Canada); Sadygov, Z. [National Nuclear Research Center, Baku (Azerbaijan); Joint Institute for Nuclear Research, Dubna (Russian Federation); Suleymanov, S. [National Nuclear Research Center, Baku (Azerbaijan); Zerrouk, F. [Zecotek Photonics Inc., Vancouver (Canada); Madatov, R. [Institute of Radiation Problems, Baku (Azerbaijan)

2016-07-11

A new design and principle of operation of silicon photomultipliers are presented. The new design comprises a semiconductor substrate and an array of independent micro-phototransistors formed on the substrate. Each micro-phototransistor comprises a photosensitive base operating in Geiger mode and an individual micro-emitter covering a small part of the base layer, thereby creating, together with this latter, a micro-transistor. Both micro-emitters and photosensitive base layers are connected with two respective independent metal grids via their individual micro-resistors. The total value of signal gain in the proposed silicon photomultiplier is a result of both the avalanche gain in the base layer and the corresponding gain in the micro-transistor. The main goals of the new design are: significantly lower both optical crosstalk and after-pulse effects at high signal amplification, improve speed of single photoelectron pulse formation, and significantly reduce the device capacitance.

Cooperation of micro- and meso-porous carbon electrode materials in electric double-layer capacitors

Energy Technology Data Exchange (ETDEWEB)

Zheng, Cheng [State Key Laboratory of Electroanalytical Chemistry, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, 5625 Renmin Street, Changchun 130022, Jilin Province (China); Graduate University of Chinese Academy of Sciences, Beijing 100039 (China); Qi, Li; Wang, Hongyu [State Key Laboratory of Electroanalytical Chemistry, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, 5625 Renmin Street, Changchun 130022, Jilin Province (China); Yoshio, Masaki [Advanced Research Center, Saga University, 1341 Yoga-machi, Saga 840-0047 (Japan)

2010-07-01

The capacitive characteristics of micro- and meso-porous carbon materials have been compared in cyclic voltammetric studies and galvanostatic charge-discharge tests. Meso-porous carbon can keep certain high capacitance values at high scan rates, whereas micro-porous carbon possesses very high capacitance values at low scan rates but fades quickly as the scan rate rises up. For better performance of electric double-layer capacitors (EDLCs), the cooperative application of both kinds of carbon materials has been proposed in the following two ways: mixing both kinds of carbons in the same electrode or using the asymmetric configuration of carbon electrodes in the same EDLC. The cooperative effect on the electrochemical performance has also been addressed. (author)

Microcapillary Features in Silicon Alloyed High-Strength Cast Iron

Directory of Open Access Journals (Sweden)

R.K. Hasanli

2017-04-01

Full Text Available Present study explores features of silicon micro capillary in alloyed high-strength cast iron with nodular graphite (ductile iron produced in metal molds. It identified the nature and mechanism of micro liquation of silicon in a ductile iron alloyed with Nickel and copper, and demonstrated significant change of structural-quality characteristics. It was concluded that the matrix of alloyed ductile iron has a heterogeneous structure with cross reinforcement and high-silicon excrement areas.

Double-side illuminated titania nanotubes for high volume hydrogen generation by water splitting

Science.gov (United States)

Mohapatra, Susanta K.; Mahajan, Vishal K.; Misra, Mano

2007-11-01

A sonoelectrochemical anodization method is proposed to synthesize TiO2 nanotubular arrays on both sides of a titanium foil (TiO2/Ti/TiO2). Highly ordered TiO2 nanotubular arrays of 16 cm2 area with uniform surface distribution can be obtained using this anodization procedure. These double-sided TiO2/Ti/TiO2 materials are used as both photoanode (carbon-doped titania nanotubes) and cathode (Pt nanoparticles dispersed on TiO2 nanotubes; PtTiO2/Ti/PtTiO2) in a specially designed photoelectrochemical cell to generate hydrogen by water splitting at a rate of 38 ml h-1. The nanomaterials are characterized by FESEM, HRTEM, STEM, EDS, FFT, SAED and XPS techniques. The present approach can be used for large-scale hydrogen generation using renewable energy sources.

Double-Sided Sliding-Paraboloid (DSSP): A new tool for preprocessing GPR data

Science.gov (United States)

Rashed, Mohamed; Rashed, Essam A.

2017-05-01

Background noise in Ground Penetrating Radar (GPR) data is a nagging problem that degrades the quality of GPR images and increases their ambiguity. There are several methods adopting different strategies to remove background noise. In this study, we present the Double-Sided Sliding-Paraboloid (DSSP) as a new background removal technique. Experiments conducted on field GPR data show that the proposed DSSP technique has several advantages over existing background removal techniques. DSSP removes background noise more efficiently while preserving first arrivals and other strong horizontal reflections. Moreover, DSSP introduces no artifacts to GPR data and corrects data for DC-shift and wow noise.

Integrated packaging of multiple double sided cooling planar bond power modules

Science.gov (United States)

Liang, Zhenxian

2018-04-10

An integrated double sided cooled power module has one or multiple phase legs configuration including one or more planar power packages, each planar power package having an upper power switch unit and a lower power switch unit directly bonded and interconnected between two insulated power substrates, and further sandwiched between two heat exchangers via direct bonds. A segmented coolant manifold is interposed with the one or more planar power packages and creates a sealed enclosure that defines a coolant inlet, a coolant outlet and a coolant flow path between the inlet and the outlet. A coolant circulates along the flow path to remove heat and increase the power density of the power module.

Studies of double-sided silicon microstrip detectors

Energy Technology Data Exchange (ETDEWEB)

Seidel, S.C. [New Mexico Univ., Albuquerque, NM (United States). Center for Particle Phys.; Bruner, N.L. [New Mexico Univ., Albuquerque, NM (United States). Center for Particle Phys.; Frautschi, M.A. [New Mexico Univ., Albuquerque, NM (United States). Center for Particle Phys.; Hoeferkamp, M.R. [New Mexico Univ., Albuquerque, NM (United States). Center for Particle Phys.; Patton, A. [New Mexico Univ., Albuquerque, NM (United States). Center for Particle Phys.

1996-12-01

The electrical characteristics of detectors manufactured by SINTEF/SI with a variety of geometrical and processing options have been investigated. The detectors` leakage current, depletion voltage, bias resistance, interstrip and coupling capacitance, and coupling capacitor breakdown voltage were studied. (orig.).

Studies of double-sided silicon microstrip detectors

International Nuclear Information System (INIS)

Seidel, S.C.; Bruner, N.L.; Frautschi, M.A.; Hoeferkamp, M.R.; Patton, A.

1996-01-01

The electrical characteristics of detectors manufactured by SINTEF/SI with a variety of geometrical and processing options have been investigated. The detectors' leakage current, depletion voltage, bias resistance, interstrip and coupling capacitance, and coupling capacitor breakdown voltage were studied. (orig.)

Optical micro-cavities on silicon

Science.gov (United States)

Dai, Daoxin; Liu, Erhu; Tan, Ying

2018-01-01

Silicon-based optical microcavities are very popular for many applications because of the ultra-compact footprint, easy scalability, and functional versatility. In this paper we give a discussion about the challenges of the optical microcavities on silicon and also give a review of our recent work, including the following parts. First, a near-"perfect" high-order MRR optical filter with a box-like filtering response is realized by introducing bent directional couplers to have sufficient coupling between the access waveguide and the microrings. Second, an efficient thermally-tunable MRR-based optical filter with graphene transparent nano-heater is realized by introducing transparent graphene nanoheaters. Thirdly, a polarization-selective microring-based optical filter is realized to work with resonances for only one of TE and TM polarizations for the first time. Finally, a on-chip reconfigurable optical add-drop multiplexer for hybrid mode- /wavelength-division-multiplexing systems is realized for the first time by monolithically integrating a mode demultiplexer, four MRR optical switches, and a mode multiplexer.

Dual-scale nanoripple/nanoparticle-covered microspikes on silicon by femtosecond double pulse train irradiation in water

Energy Technology Data Exchange (ETDEWEB)

Meng, Ge; Jiang, Lan [Laser Micro/Nano Fabrication Laboratory, School of Mechanical Engineering, Beijing Institute of Technology, Beijing 100081 (China); Li, Xin, E-mail: lixin02@bit.edu.cn [Laser Micro/Nano Fabrication Laboratory, School of Mechanical Engineering, Beijing Institute of Technology, Beijing 100081 (China); Xu, Yongda; Shi, Xuesong; Yan, Ruyu [Laser Micro/Nano Fabrication Laboratory, School of Mechanical Engineering, Beijing Institute of Technology, Beijing 100081 (China); Lu, Yongfeng [Department of Electrical Engineering, University of Nebraska-Lincoln, Lincoln, NE 68588-0511 (United States)

2017-07-15

Highlights: • A simple method to fabricate dual-scale structures on silicon is proposed. • Nanoripple-covered or nanoparticle-covered microspikes are obtained on Si firstly. • They are obtained by temporally-shaped fs laser one-step irradiation in water. • Their application in SERS was proved with a high sensitivity of up to 10{sup 8}. - Abstract: Novel dual-scale structures were obtained by femtosecond double pulse train (subpulse delay Δt > 0 ps) one-step irradiating silicon in water. The dual-scale structures consist of microspikes of ∼2 μm width and ∼0.5 μm height, and nanoripples with a mean period of 146 nm or nanoparticles with a mean diameter of 90 nm which entirely cover on the microspikes, for linearly polarized or circularly polarized femtosecond laser respectively. The formation of dual-scale structures involves the following processes: (1) Continuously laser energy deposited at femtosecond to picosecond timescales within silicon surfaces and central regions, will result in enhanced capillary waves and thinner melted silicon layers. Hence, the microspikes can be induced at laser fluences below ablation threshold; (2) Later (>500–800 pulses), a mass of debris and bubbles produced will lead to the remarkably and uniformly scattering or shielding of subsequent incident laser energy. Hence, the nanostructures can be induced. The novel structures exhibit high-sensitive surface enhanced Raman scattering with an enhancement factor of 10{sup 8} for Rhodamine 6G detecting. Besides, the novel structures have application potentials in improving the silicon hydrophobicity, antireflection, etc.

Double Super-Exchange in Silicon Quantum Dots Connected by Short-Bridged Networks

Science.gov (United States)

Li, Huashan; Wu, Zhigang; Lusk, Mark

2013-03-01

Silicon quantum dots (QDs) with diameters in the range of 1-2 nm are attractive for photovoltaic applications. They absorb photons more readily, transport excitons with greater efficiency, and show greater promise in multiple-exciton generation and hot carrier collection paradigms. However, their high excitonic binding energy makes it difficult to dissociate excitons into separate charge carriers. One possible remedy is to create dot assemblies in which a second material creates a Type-II heterojunction with the dot so that exciton dissociation occurs locally. This talk will focus on such a Type-II heterojunction paradigm in which QDs are connected via covalently bonded, short-bridge molecules. For such interpenetrating networks of dots and molecules, our first principles computational investigation shows that it is possible to rapidly and efficiently separate electrons to QDs and holes to bridge units. The bridge network serves as an efficient mediator of electron superexchange between QDs while the dots themselves play the complimentary role of efficient hole superexchange mediators. Dissociation, photoluminescence and carrier transport rates will be presented for bridge networks of silicon QDs that exhibit such double superexchange. This material is based upon work supported by the Renewable Energy Materials Research Science and Engineering Center (REMRSEC) under Grant No. DMR-0820518 and Golden Energy Computing Organization (GECO).

Fabrication of micromirrors with pyramidal shape using anisotropic etching of silicon

OpenAIRE

Moktadir, Z.; Vijaya Prakash, G.; Trupke, M.; Koukharenko, E.; Kraft, M.; Baumberg, J.J.; Eriksson, S.; Hinds, E.A.

2005-01-01

Gold micro-mirrors have been formed in silicon in an inverted pyramidal shape. The pyramidal structures are created in the (100) surface of a silicon wafer by anisotropic etching in potassium hydroxide. High quality micro-mirrors are then formed by sputtering gold onto the smooth silicon (111) faces of the pyramids. These mirrors show great promise as high quality optical devices suitable for integration into MOEMS systems.

A possible role for silicon microstrip detectors in nuclear medicine Compton imaging of positron emitters

CERN Document Server

Scannavini, M G; Royle, G J; Cullum, I; Raymond, M; Hall, G; Iles, G

2002-01-01

Collimation of gamma-rays based on Compton scatter could provide in principle high resolution and high sensitivity, thus becoming an advantageous method for the imaging of radioisotopes of clinical interest. A small laboratory prototype of a Compton camera is being constructed in order to initiate studies aimed at assessing the feasibility of Compton imaging of positron emitters. The design of the camera is based on the use of a silicon collimator consisting of a stack of double-sided, AC-coupled microstrip detectors (area 6x6 cm sup 2 , 500 mu m thickness, 128 channels/side). Two APV6 chips are employed for signal readout on opposite planes of each detector. This work presents the first results on the noise performance of the silicon strip detectors. Measurements of the electrical characteristics of the detector are also reported. On the basis of the measured noise, an angular resolution of approximately 5 deg. is predicted for the Compton collimator.

A high extinction ratio THz polarizer fabricated by double-bilayer wire grid structure

Science.gov (United States)

Lu, Bin; Wang, Haitao; Shen, Jun; Yang, Jun; Mao, Hongyan; Xia, Liangping; Zhang, Weiguo; Wang, Guodong; Peng, Xiao-Yu; Wang, Deqiang

2016-02-01

We designed a new style of broadband terahertz (THz) polarizer with double-bilayer wire grid structure by fabricating them on both sides of silicon substrate. This THz polarizer shows a high average extinction ratio of 60dB in 0.5 to 2.0 THz frequency range and the maximum of 87 dB at 1.06 THz, which is much higher than that of conventional monolayer wire grid polarizers and single-bilayer wire grid ones.

A high extinction ratio THz polarizer fabricated by double-bilayer wire grid structure

Directory of Open Access Journals (Sweden)

Bin Lu

2016-02-01

Full Text Available We designed a new style of broadband terahertz (THz polarizer with double-bilayer wire grid structure by fabricating them on both sides of silicon substrate. This THz polarizer shows a high average extinction ratio of 60dB in 0.5 to 2.0 THz frequency range and the maximum of 87 dB at 1.06 THz, which is much higher than that of conventional monolayer wire grid polarizers and single-bilayer wire grid ones.

Suppression of nanoindentation-induced phase transformation in crystalline silicon implanted with hydrogen

Science.gov (United States)

Jelenković, Emil V.; To, Suet

2017-09-01

In this paper the effect of hydrogen implantation in silicon on nanoindentation-induced phase transformation is investigated. Hydrogen ions were implanted in silicon through 300 nm thick oxide with double energy implantation (75 and 40 keV). For both energies implantation dose was 4 × 1016 cm-2. Some samples were thermally annealed at 400 °C. The micro-Raman spectroscopy was applied on nanoindentation imprints and the obtained results were related to the pop out/elbow appearances in nanoindentatioin unloading-displacement curves. The Raman spectroscopy revealed a suppression of Si-XII and Si-III phases and formation of a-Si in the indents of hydrogen implanted Si. The high-resolution x-ray diffraction measurements were taken to support the analysis of silicon phase formation during nanoindentation. Implantation induced strain, high hydrogen concentration, and platelets generation were found to be the factors that control suppression of c-Si phases Si-XII and Si-III, as well as a-Si phase enhancement during nanoindentation. [Figure not available: see fulltext.

Oral analgesia vs intravenous conscious sedation during Essure Micro-Insert sterilization procedure: randomized, double-blind, controlled trial.

Science.gov (United States)

Thiel, John A; Lukwinski, Angelina; Kamencic, Huse; Lim, Hyung

2011-01-01

To compare the pain reported by patients during the Essure Micro-Insert sterilization procedure using either intravenous conscious sedation or oral analgesia. Randomized, double-blind, placebo-controlled trial (Canadian Task Force classification I). Tertiary care ambulatory women's clinic. Eighty women of reproductive age women requesting permanent sterilization. Hysteroscopic placement of the Essure Micro-Insert permanent birth control system. Patients undergoing placement of the Essure Micro-Insert system for permanent contraception were randomized to receive either intravenous conscious sedation, oral analgesia, or placebo. During the procedure, pain scores were recorded using a visual analog scale. Patients in the oral analgesia group reported slightly more pain during insertion of the hysteroscope and placement of the second micro-insert; the groups were otherwise equivalent. They were also equivalent when all visual analog scale scores were combined. Oral analgesia is an effective method of pain control during placement of the Essure Micro-Insert permanent birth control system. Copyright © 2011 AAGL. Published by Elsevier Inc. All rights reserved.

Development and evaluation of test stations for the quality assurance of the silicon micro-strip detector modules for the CMS experiment

International Nuclear Information System (INIS)

Poettgens, M.

2007-01-01

CMS (Compact Muon Solenoid) is one of four large-scale detectors which will be operated at the LHC (Large Hadron Collider) at the European Laboratory for Particle Physics (CERN). For the search for new physics the reconstruction of the collision products and their properties is essential. In the innermost part of the CMS detector the traces of ionizing particles are measured utilizing a silicon tracker. A large fraction of this detector is equipped with silicon micro-strip modules which provide a precise space resolution in 1-dimension. A module consists of a sensor for detection of particles, the corresponding read-out electronics (hybrid) and a mechanical support structure. Since the 15,148 modules, which will be installed in the silicon micro-strip detector, have a total sensitive surface area of about 198 m 2 , the inner tracker of CMS is the largest silicon tracking detector, which has ever been built. While the sensors and hybrids are produced in industry, the construction of the modules and the control of the quality is done by the members of the 21 participating institutes. Since the access to the silicon micro-strip tracker will be very limited after the installation in the CMS detector the installed modules must be of high quality. For this reason the modules are thoroughly tested and the test results are uploaded to a central database. By the development of a read-out system and the corresponding software the III. Physikalisches Institut made an important contribution for the electrical and functional quality control of hybrids and modules. The read-out system provides all features for the operation and test of hybrids and modules and stands out due to high reliability and simple handling. Because a very user-friedly and highly automated software it became the official test tool and was integrated in various test stands. The test stands, in which the read-out system is integrated in, are described and the tests which are implemented in the corresponding

Development and evaluation of test stations for the quality assurance of the silicon micro-strip detector modules for the CMS experiment

Energy Technology Data Exchange (ETDEWEB)

Poettgens, M.

2007-11-22

CMS (Compact Muon Solenoid) is one of four large-scale detectors which will be operated at the LHC (Large Hadron Collider) at the European Laboratory for Particle Physics (CERN). For the search for new physics the reconstruction of the collision products and their properties is essential. In the innermost part of the CMS detector the traces of ionizing particles are measured utilizing a silicon tracker. A large fraction of this detector is equipped with silicon micro-strip modules which provide a precise space resolution in 1-dimension. A module consists of a sensor for detection of particles, the corresponding read-out electronics (hybrid) and a mechanical support structure. Since the 15,148 modules, which will be installed in the silicon micro-strip detector, have a total sensitive surface area of about 198 m{sup 2}, the inner tracker of CMS is the largest silicon tracking detector, which has ever been built. While the sensors and hybrids are produced in industry, the construction of the modules and the control of the quality is done by the members of the 21 participating institutes. Since the access to the silicon micro-strip tracker will be very limited after the installation in the CMS detector the installed modules must be of high quality. For this reason the modules are thoroughly tested and the test results are uploaded to a central database. By the development of a read-out system and the corresponding software the III. Physikalisches Institut made an important contribution for the electrical and functional quality control of hybrids and modules. The read-out system provides all features for the operation and test of hybrids and modules and stands out due to high reliability and simple handling. Because a very user-friedly and highly automated software it became the official test tool and was integrated in various test stands. The test stands, in which the read-out system is integrated in, are described and the tests which are implemented in the

3D hierarchical assembly of ultrathin MnO2 nanoflakes on silicon nanowires for high performance micro-supercapacitors in Li- doped ionic liquid

Science.gov (United States)

Dubal, Deepak P.; Aradilla, David; Bidan, Gérard; Gentile, Pascal; Schubert, Thomas J.S.; Wimberg, Jan; Sadki, Saïd; Gomez-Romero, Pedro

2015-01-01

Building of hierarchical core-shell hetero-structures is currently the subject of intensive research in the electrochemical field owing to its potential for making improved electrodes for high-performance micro-supercapacitors. Here we report a novel architecture design of hierarchical MnO2@silicon nanowires (MnO2@SiNWs) hetero-structures directly supported onto silicon wafer coupled with Li-ion doped 1-Methyl-1-propylpyrrolidinium bis(trifluromethylsulfonyl)imide (PMPyrrBTA) ionic liquids as electrolyte for micro-supercapacitors. A unique 3D mesoporous MnO2@SiNWs in Li-ion doped IL electrolyte can be cycled reversibly across a voltage of 2.2 V and exhibits a high areal capacitance of 13 mFcm−2. The high conductivity of the SiNWs arrays combined with the large surface area of ultrathin MnO2 nanoflakes are responsible for the remarkable performance of these MnO2@SiNWs hetero-structures which exhibit high energy density and excellent cycling stability. This combination of hybrid electrode and hybrid electrolyte opens up a novel avenue to design electrode materials for high-performance micro-supercapacitors. PMID:25985388

The origin of double peak electric field distribution in heavily irradiated silicon detectors

CERN Document Server

Eremin, V; Li, Z

2002-01-01

The first observation of double peak (DP) electric field distribution in heavily neutron irradiated (>10 sup 1 sup 4 n/cm sup 2) semiconductor detectors has been published about 6 yr ago. However, this effect was not quantitatively analyzed up to now. The explanation of the DP electric field distribution presented in this paper is based on the properties of radiation induced deep levels in silicon, which act as deep traps, and on the distribution of the thermally generated free carrier concentration in the detector bulk. In the frame of this model, the earlier published considerations on the so-called 'double junction (DJ) effect' are discussed as well. The comparison of the calculated electric field profiles at different temperatures with the experimental ones allows one to determine a set of deep levels. This set of deep levels, and their charge filling status are essential to the value and the distribution of space charge in the space charge region in the range of 305-240 K, which is actual temperature ran...

Electrochemical detection of dopamine using arrays of liquid-liquid micro-interfaces created within micromachined silicon membranes

International Nuclear Information System (INIS)

Berduque, Alfonso; Zazpe, Raul; Arrigan, Damien W.M.

2008-01-01

The detection of protonated dopamine by differential pulse voltammetry (DPV) and square wave voltammetry (SWV) at arrays of micro-interfaces between two immiscible electrolyte solutions (μITIES) is presented. Microfabricated porous silicon membranes (consisting of eight pores, 26.6 μm in radius and 500 μm pore-pore separation, in a hexagonal layout) were prepared by photolithographic and etching procedures. The membrane pores were fabricated with hydrophobic internal walls so that the organic phase filled the pores and created the liquid interface at the aqueous side of the membrane. These were used for harnessing the benefits of three-dimensional diffusion to the interface and for interface stabilisation. The liquid-liquid interface provides a simple method to overcome the major problem in the voltammetric detection of dopamine at solid electrodes due to the co-existence of ascorbate at higher concentrations. Selectivity for dopamine over ascorbate was achieved by the use of dibenzo-18-crown-6 (DB18C6) for the facilitated ion transfer of dopamine across the μITIES array. Under these conditions, the presence of ascorbate in excess did not interfere in the detection of dopamine and the lowest concentration detectable was ca. 0.5 μM. In addition, the drawback of current signal saturation (non-linear increase of the peak current with the concentration of dopamine) observed at conventional (millimetre-sized) liquid-liquid interfaces was overcome using the microfabricated porous membranes

Internal alignment and position resolution of the silicon tracker of DAMPE determined with orbit data

Science.gov (United States)

Tykhonov, A.; Ambrosi, G.; Asfandiyarov, R.; Azzarello, P.; Bernardini, P.; Bertucci, B.; Bolognini, A.; Cadoux, F.; D'Amone, A.; De Benedittis, A.; De Mitri, I.; Di Santo, M.; Dong, Y. F.; Duranti, M.; D'Urso, D.; Fan, R. R.; Fusco, P.; Gallo, V.; Gao, M.; Gargano, F.; Garrappa, S.; Gong, K.; Ionica, M.; La Marra, D.; Lei, S. J.; Li, X.; Loparco, F.; Marsella, G.; Mazziotta, M. N.; Peng, W. X.; Qiao, R.; Salinas, M. M.; Surdo, A.; Vagelli, V.; Vitillo, S.; Wang, H. Y.; Wang, J. Z.; Wang, Z. M.; Wu, D.; Wu, X.; Zhang, F.; Zhang, J. Y.; Zhao, H.; Zimmer, S.

2018-06-01

The DArk Matter Particle Explorer (DAMPE) is a space-borne particle detector designed to probe electrons and gamma-rays in the few GeV to 10 TeV energy range, as well as cosmic-ray proton and nuclei components between 10 GeV and 100 TeV. The silicon-tungsten tracker-converter is a crucial component of DAMPE. It allows the direction of incoming photons converting into electron-positron pairs to be estimated, and the trajectory and charge (Z) of cosmic-ray particles to be identified. It consists of 768 silicon micro-strip sensors assembled in 6 double layers with a total active area of 6.6 m2. Silicon planes are interleaved with three layers of tungsten plates, resulting in about one radiation length of material in the tracker. Internal alignment parameters of the tracker have been determined on orbit, with non-showering protons and helium nuclei. We describe the alignment procedure and present the position resolution and alignment stability measurements.

A Silicon SPECT System for Molecular Imaging of the Mouse Brain.

Science.gov (United States)

Shokouhi, Sepideh; Fritz, Mark A; McDonald, Benjamin S; Durko, Heather L; Furenlid, Lars R; Wilson, Donald W; Peterson, Todd E

2007-01-01

We previously demonstrated the feasibility of using silicon double-sided strip detectors (DSSDs) for SPECT imaging of the activity distribution of iodine-125 using a 300-micrometer thick detector. Based on this experience, we now have developed fully customized silicon DSSDs and associated readout electronics with the intent of developing a multi-pinhole SPECT system. Each DSSD has a 60.4 mm × 60.4 mm active area and is 1 mm thick. The strip pitch is 59 micrometers, and the readout of the 1024 strips on each side gives rise to a detector with over one million pixels. Combining four high-resolution DSSDs into a SPECT system offers an unprecedented space-bandwidth product for the imaging of single-photon emitters. The system consists of two camera heads with two silicon detectors stacked one behind the other in each head. The collimator has a focused pinhole system with cylindrical-shaped pinholes that are laser-drilled in a 250 μm tungsten plate. The unique ability to collect projection data at two magnifications simultaneously allows for multiplexed data at high resolution to be combined with lower magnification data with little or no multiplexing. With the current multi-pinhole collimator design, our SPECT system will be capable of offering high spatial resolution, sensitivity and angular sampling for small field-of-view applications, such as molecular imaging of the mouse brain.

MUST: A silicon strip detector array for radioactive beam experiments

CERN Document Server

Blumenfeld, Y; Sauvestre, J E; Maréchal, F; Ottini, S; Alamanos, N; Barbier, A; Beaumel, D; Bonnereau, B; Charlet, D; Clavelin, J F; Courtat, P; Delbourgo-Salvador, P; Douet, R; Engrand, M; Ethvignot, T; Gillibert, A; Khan, E; Lapoux, V; Lagoyannis, A; Lavergne, L; Lebon, S; Lelong, P; Lesage, A; Le Ven, V; Lhenry, I; Martin, J M; Musumarra, A; Pita, S; Petizon, L; Pollacco, E; Pouthas, J; Richard, A; Rougier, D; Santonocito, D; Scarpaci, J A; Sida, J L; Soulet, C; Stutzmann, J S; Suomijärvi, T; Szmigiel, M; Volkov, P; Voltolini, G

1999-01-01

A new and innovative array, MUST, based on silicon strip technology and dedicated to the study of reactions induced by radioactive beams on light particles is described. The detector consists of 8 silicon strip - Si(Li) telescopes used to identify recoiling light charged particles through time of flight, energy loss and energy measurements and to determine precisely their scattering angle through X, Y position measurements. Each 60x60 mm sup 2 double sided silicon strip detector with 60 vertical and 60 horizontal strips yields an X-Y position resolution of 1 mm, an energy resolution of 50 keV, a time resolution of around 1 ns and a 500 keV energy threshold for protons. The backing Si(Li) detectors stop protons up to 25 MeV with a resolution of approximately 50 keV. CsI crystals read out by photo-diodes which stop protons up to 70 MeV are added to the telescopes for applications where higher energy particles need to be detected. The dedicated electronics in VXIbus standard allow us to house the 968 logic and a...

Surface passivation at low temperature of p- and n-type silicon wafers using a double layer a-Si:H/SiNx:H

International Nuclear Information System (INIS)

Focsa, A.; Slaoui, A.; Charifi, H.; Stoquert, J.P.; Roques, S.

2009-01-01

Surface passivation of bare silicon or emitter region is of great importance towards high efficiency solar cells. Nowadays, this is usually accomplished by depositing an hydrogenated amorphous silicon nitride (a-SiNx:H) layer on n + p structures that serves also as an excellent antireflection layer. On the other hand, surface passivation of p-type silicon is better assured by an hydrogenated amorphous silicon (a-Si:H) layer but suffers from optical properties. In this paper, we reported the surface passivation of p-type and n-type silicon wafers by using an a-Si:H/SiNx:H double layer formed at low temperature (50-400 deg. C) with ECR-PECVD technique. We first investigated the optical properties (refraction index, reflectance, and absorbance) and structural properties by FTIR (bonds Si-H, N-H) of the deposited films. The hydrogen content in the layers was determined by elastic recoil detection analysis (ERDA). The passivation effect was monitored by measuring the minority carrier effective lifetime vs. different parameters such as deposition temperature and amorphous silicon layer thickness. We have found that a 10-15 nm a-Si film with an 86 nm thick SiN layer provides an optimum of the minority carriers' lifetime. It increases from an initial value of about 50-70 μs for a-Si:H to about 760 and 800 μs for a-Si:H/SiNx:H on Cz-pSi and FZ-nSi, respectively, at an injection level 2 x 10 15 cm -3 . The effective surface recombination velocity, S eff , for passivated double layer on n-type FZ Si reached 11 cm/s and for FZ-pSi-14 cm/s, and for Cz-pSi-16-20 cm/s. Effect of hydrogen in the passivation process is discussed.

Scalable photonic quantum computing assisted by quantum-dot spin in double-sided optical microcavity.

Science.gov (United States)

Wei, Hai-Rui; Deng, Fu-Guo

2013-07-29

We investigate the possibility of achieving scalable photonic quantum computing by the giant optical circular birefringence induced by a quantum-dot spin in a double-sided optical microcavity as a result of cavity quantum electrodynamics. We construct a deterministic controlled-not gate on two photonic qubits by two single-photon input-output processes and the readout on an electron-medium spin confined in an optical resonant microcavity. This idea could be applied to multi-qubit gates on photonic qubits and we give the quantum circuit for a three-photon Toffoli gate. High fidelities and high efficiencies could be achieved when the side leakage to the cavity loss rate is low. It is worth pointing out that our devices work in both the strong and the weak coupling regimes.

Novel processing of bioglass ceramics from silicone resins containing micro- and nano-sized oxide particle fillers.

Science.gov (United States)

Fiocco, L; Bernardo, E; Colombo, P; Cacciotti, I; Bianco, A; Bellucci, D; Sola, A; Cannillo, V

2014-08-01

Highly porous scaffolds with composition similar to those of 45S5 and 58S bioglasses were successfully produced by an innovative processing method based on preceramic polymers containing micro- and nano-sized fillers. Silica from the decomposition of the silicone resins reacted with the oxides deriving from the fillers, yielding glass ceramic components after heating at 1000°C. Despite the limited mechanical strength, the obtained samples possessed suitable porous architecture and promising biocompatibility and bioactivity characteristics, as testified by preliminary in vitro tests. © 2013 Wiley Periodicals, Inc.

A high-gain, low ion-backflow double micro-mesh gaseous structure for single electron detection

Science.gov (United States)

Zhang, Zhiyong; Qi, Binbin; Liu, Chengming; Feng, Jianxin; Liu, Jianbei; Shao, Ming; Zhou, Yi; Hong, Daojin; Lv, You; Song, Guofeng; Wang, Xu; You, Wenhao

2018-05-01

Application of micro-pattern gaseous detectors to gaseous photomultiplier tubes has been widely investigated over the past two decades. In this paper, we present a double micro-mesh gaseous structure that has been designed and fabricated for this application. Tests with X-rays and UV laser light indicate that this structure exhibits an excellent gas gain of > 7 × 104 and good energy resolution of 19% (full width at half maximum) for 5.9 keV X-rays. The gas gain can reach up to 106 for single electrons while maintaining a very low ion-backflow ratio down to 0.0005. This structure has good potential for other applications requiring a very low level of ion backflow.

Micro filtration membrane sieve with silicon micro machining for industrial and biomedical applications

NARCIS (Netherlands)

van Rijn, C.J.M.; Elwenspoek, Michael Curt

1995-01-01

With the use of silicon micromachining an inorganic membrane sieve for microfiltration is constructed, having a siliconnitride membrane layer with thickness typically 1 pm and perforations typically between 0.5 pm and 10 pm in diameter. As a support a -silicon wafer with openings of loo0 pm in

Performance optimization of a hybrid micro-grid based on double-loop MPPT and SVC-MERS

Science.gov (United States)

Wei, Yewen; Hou, Xilun; Zhang, Xiang; Xiong, Shengnan; Peng, Fei

2018-02-01

With ever-increasing concerns on environmental pollution and energy shortage, the development of renewable resource has attracted a lot of attention. This paper first reviews both the wind and photovoltaic (PV) generation techniques and approaches of micro-grid voltage control. Then, a novel islanded micro-grid, which consists of wind & PV generation and hybrid-energy storage device, is built for application to remote and isolated areas. For the PV power generation branch, a double- maximum power point tracking (MPPT) technique is developed to trace the sunlight and regulate the tilt angle of PV panels. For wind-power generation branch, squirrel cage induction generator (SCIG) is used as its simple structure, robustness and less cost. In order to stabilize the output voltage of SCIGs, a new Static Var Compensator named magnetic energy recovery switch (SVC-MERS) is applied. Finally, experimental results confirm that both of the proposed methods can improve the efficiency of PV power generation and voltage stability of the micro-grid, respectively.

Transparent, double-sided, ITO-free, flexible dye-sensitized solar cells based on metal wire/ZnO nanowire arrays

Energy Technology Data Exchange (ETDEWEB)

Wang, Wei; Zhao, Qing; Li, Heng; Yu, Dapeng [State Key Laboratory for Mesoscopic Physics and Electron Microscopy Laboratory, School of Physics, Peking University, Beijing 100871 (China); Wu, Hongwei; Zou, Dechun [Beijing National Laboratory for Molecular Sciences, Key Laboratory of Polymer Chemistry and Physics of Ministry of Education, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871 (China)

2012-07-10

Transparent, double-sided, flexible, ITO-free dye-sensitized solar cells (DSSCs) are fabricated in a simple, facile, and controllable way. Highly ordered, high-crystal-quality, high-density ZnO nanowire arrays are radially grown on stainless steel, Au, Ag, and Cu microwires, which serve as working electrodes. Pt wires serve as the counter electrodes. Two metal wires are encased in electrolyte between two poly(ethylene terephthalate) (PET) films (or polydimethylsiloxane (PDMS) films) to render the device both flexible and highly transparent. The effect of the dye thickness on the photovoltaic performance of the DSSCs as a function of dye-loading time is investigated systematically. Shorter dye-loading times lead to thinner dye layers and better device performance. A dye-loading time of 20 min results in the best device performance. An oxidation treatment of the metal wires is developed effectively to avoid the galvanic-battery effect found in the experiment, which is crucial for real applications of double-metal-wire DSSC configurations. The device shows very good transparency and can increase sunlight use efficiency through two-sided illumination. The double-wire DSSCs remain stable for a long period of time and can be bent at large angles, up to 107 , reversibly, without any loss of performance. The double-wire-PET, planar solar-cell configuration can be used as window stickers and can be readily realized for large-area-weave roll-to-roll processing. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Silicone Oil Removal from Aphakic Eyes Using a Side Irrigating Cannula

Directory of Open Access Journals (Sweden)

Touka Banaee

2008-12-01

Full Text Available

In an interventional case series, 11 aphakic eyes of 11 patients with previous vitrectomy and silicone oil tamponade underwent passive silicone oil removal under topical anesthesia through a single clear cornea incision with use of a side irrigating phacoemulsification irrigation cannula without performing a sclerotomy. All procedures were simple, short and uncomplicated. The only observed complication was minimal localized corneal edema the day after the procedure, which resolved within 1-2 days. Use of a side irrigating cannula permits safe and simple removal of silicone oil under topical anesthesia through a single clear cornea incision without need for sclerotomy.