Conductance in double quantum well systems
International Nuclear Information System (INIS)
Hasbun, J E
2003-01-01
The object of this paper is to review the electronic conductance in double quantum well systems. These are quantum well structures in which electrons are confined in the z direction by large band gap material barrier layers, yet form a free two-dimensional Fermi gas within the sandwiched low band gap material layers in the x-y plane. Aspects related to the conductance in addition to the research progress made since the inception of such systems are included. While the review focuses on the tunnelling conductance properties of double quantum well devices, the longitudinal conductance is also discussed. Double quantum well systems are a more recent generation of structures whose precursors are the well known double-barrier resonant tunnelling systems. Thus, they have electronic signatures such as negative differential resistance, in addition to resonant tunnelling, whose behaviours depend on the wavefunction coupling between the quantum wells. As such, the barrier which separates the quantum wells can be tailored in order to provide better control of the device's electronic properties over their single well ancestors. (topical review)
Magnetophonon resonance in double quantum wells
Ploch, D.; Sheregii, E. M.; Marchewka, M.; Wozny, M.; Tomaka, G.
2009-05-01
The experimental results obtained for the magnetotransport in pulsed magnetic fields in the InGaAs/InAlAs double quantum well (DQW) structures of two different shapes of wells and different values of the electron density are reported. The magnetophonon resonance (MPR) was observed for both types of structures within the temperature range 77-125 K. Four kinds of LO phonons are taken into account to interpret the MPR oscillations in the DQW and a method of the Landau level calculation in the DQW is elaborated for this aim. The peculiarity of the MPR in the DQW is the large number of the Landau levels caused by SAS splitting of the electron states (splitting on the symmetric and anti-symmetric states) and the large number of the phonon assistance electron transitions between Landau levels. The significant role of the carrier statistics is shown too. The behavior of the electron states in the DQWs at comparably high temperatures has been studied using the MPR. It is shown that the Huang and Manasreh [Manasreh [Phys. Rev. B 54, 2044 (1996)] model involving screening of exchange interaction is confirmed.
Quantum Phase Spase Representation for Double Well Potential
Babyuk, Dmytro
2002-01-01
A behavior of quantum states (superposition of two lowest eigenstates, Gaussian wave packet) in phase space is studied for one and two dimensional double well potential. Two dimensional potential is constructed from double well potential coupled linearly and quadratically to harmonic potential. Quantum trajectories are compared with classical ones. Preferable tunneling path in phase space is found. An influence of energy of initial Gaussian wave packet and trajectory initial condition on tunn...
Tunnelling and relaxation in semiconductor double quantum wells
International Nuclear Information System (INIS)
Ferreira, R.; Bastard, G.
1997-01-01
Double quantum wells are among the simplest semiconductor heterostructures exhibiting tunnel coupling. The existence of a quantum confinement effect for the energy levels of a narrow single quantum well has been largely studied. In double quantum wells, in addition to these confinement effects which characterize the levels of the isolated wells, one faces the problem of describing the eigenstates of systems interacting weakly through a potential barrier. In addition, the actual structures differ from the ideal systems studied in the quantum mechanics textbooks in many aspects. The presence of defects leads, for instance, to an irreversible time evolution for a population of photocreated carriers. This irreversible transfer is now clearly established experimentally. The resonant behaviour of the transfer has also been evidenced, from the study of biased structures. If the existence of an interwell transfer is now clearly established from the experimental point of view, its theoretical description, however, is not fully satisfactory. This review focuses on the theoretical description of the energy levels and of the interwell assisted transfer in double quantum wells. We shall firstly outline the problem of tunnel coupling in semiconductor heterostructures and then discuss the single particle and exciton eigenstates in double quantum wells. In the remaining part of the review we shall present and critically review a few theoretical models used to describe the assisted interwell transfer in these structures. (author)
Oscillatory magnetoconductance of quantum double-well channels
International Nuclear Information System (INIS)
Rojo, A.G.; Kumar, N.; Balseiro, C.A.
1988-07-01
The recently observed flux-periodic interference effect between parallel quantum double-well channels is theoretically studied in a discrete model that takes into account tunneling between channels. We obtain oscillatory magnetoconductance with small modulations which is attributable to the tunneling. Our treatment includes the effect of evanescent modes. (author). 7 refs, 2 figs
Bose Condensation of Interwell Excitons in Double Quantum Wells
DEFF Research Database (Denmark)
Larionov, A. V.; Timofeev, V. B.; Ni, P. A.
2002-01-01
The luminescence of interwell excitons in double quantum wells GaAs/AlGaAs (n–i–n heterostructures) with large-scale fluctuations of random potential in the heteroboundary planes was studied. The properties of excitons whose photoexcited electron and hole are spatially separated in the neighboring...
Bound magnetic polaron in a semimagnetic double quantum well
Kalpana, P.; Jayakumar, K.
2017-09-01
The effect of different combinations of the concentration of Mn2+ ion in the Quantum well Cd1-xinMnxin Te and the barrier Cd1-xoutMnxout Te on the Bound Magnetic Polaron (BMP) in a Diluted Magnetic Semiconductors (DMS) Double Quantum Well (DQW) has been investigated. The Schrodinger equation is solved variationally in the effective mass approximation through which the Spin Polaronic Shift (SPS) due to the formation of BMP has been estimated for various locations of the donor impurity in the DQW. The results show that the effect of the increase of Mn2+ ion composition with different combinations on SPS is predominant for On Centre Well (OCW) impurity when compared to all other impurity locations when there is no application of magnetic field (γ = 0), γ being a dimensionless parameter for the magnetic field, and the same is predominant for On Centre Barrier (OCB) impurity with the application of external magnetic field (γ = 0.15).
Resonant Tunneling in Photonic Double Quantum Well Heterostructures
Directory of Open Access Journals (Sweden)
Cox Joel
2010-01-01
Full Text Available Abstract Here, we study the resonant photonic states of photonic double quantum well (PDQW heterostructures composed of two different photonic crystals. The heterostructure is denoted as B/A/B/A/B, where photonic crystals A and B act as photonic wells and barriers, respectively. The resulting band structure causes photons to become confined within the wells, where they occupy discrete quantized states. We have obtained an expression for the transmission coefficient of the PDQW heterostructure using the transfer matrix method and have found that resonant states exist within the photonic wells. These resonant states occur in split pairs, due to a coupling between degenerate states shared by each of the photonic wells. It is observed that when the resonance energy lies at a bound photonic state and the two photonic quantum wells are far away from each other, resonant states appear in the transmission spectrum of the PDQW as single peaks. However, when the wells are brought closer together, coupling between bound photonic states causes an energy-splitting effect, and the transmitted states each have two peaks. Essentially, this means that the system can be switched between single and double transparent states. We have also observed that the total number of resonant states can be controlled by varying the width of the photonic wells, and the quality factor of transmitted peaks can be drastically improved by increasing the thickness of the outer photonic barriers. It is anticipated that the resonant states described here can be used to develop new types of photonic-switching devices, optical filters, and other optoelectronic devices.
Transport studies in p-type double quantum well samples
International Nuclear Information System (INIS)
Hyndman, R.J.
2000-01-01
The motivation for the study of double quantum well samples is that the extra spatial degree of freedom can modify the ground state energies of the system, leading to new and interesting many body effects. Electron bi-layers have been widely studied but the work presented here is the first systematic study of transport properties of a p-type, double quantum well system. The samples, grown on the 311 plane, consisted of two 100A GaAs wells separated by a 30A AlAs barrier. The thin barrier in our structures, gives rise to very strong inter-layer Coulombic interactions but in contrast to electron double quantum well samples, tunnelling between the two wells is very weak. This is due to the large effective mass of holes compared with electrons. It is possible to accurately control the total density of a sample and the relative occupancy of each well using front and back gates. A systematic study of the magnetoresistance properties of the p-type bi-layers, was carried out at low temperatures and in high magnetic fields, for samples covering a range of densities. Considerable care was required to obtain reliable results as the samples were extremely susceptible to electrical shock and were prone to drift in density slowly over time. With balanced wells, the very low tunnelling in the p-type bi-layer leads to a complete absence of all odd integers in both resistance and thermopower except for the v=1 state, ( v 1/2 in each layer) where v is the total Landau level filling factor. Unlike other FQHE features the v=1 state strengthens with increased density as inter-layer interactions increase in strength over intra-layer interactions. The state is also destroyed at a critical temperature, which is much lower than the measured activation temperature. This is taken as evidence for a finite temperature phase transition predicted for the bi-layer v=1. From the experimental observations, we construct a phase diagram for the state, which agree closely with theoretical predictions
The quantum Zeno effect in double well tunnelling
Lerner, L.
2018-05-01
Measurement lies at the heart of quantum theory, and introductory textbooks in quantum mechanics cover the measurement problem in topics such as the Schrödinger’s cat thought experiment, the EPR problem, and the quantum Zeno effect (QZE). In this article we present a new treatment of the QZE suitable for undergraduate students, for the case of a particle tunnelling between two wells while being observed in one of the wells. The analysis shows that as the observation rate increases, the tunnelling rate tends towards zero, in accordance with Zeno’s maxim ‘a watched pot never boils’. The method relies on decoherence theory, which replaces aspects of quantum collapse by the Schrödinger evolution of an open system, and its recently simplified treatment for undergraduates. Our presentation uses concepts familiar to undergraduate students, so that calculations involving many-body theory and the formal properties of the density matrix are avoided.
The Double-Well Potential in Quantum Mechanics: A Simple, Numerically Exact Formulation
Jelic, V.; Marsiglio, F.
2012-01-01
The double-well potential is arguably one of the most important potentials in quantum mechanics, because the solution contains the notion of a state as a linear superposition of "classical" states, a concept which has become very important in quantum information theory. It is therefore desirable to have solutions to simple double-well potentials…
Collective Behavior of a Spin-Aligned Gas of Interwell Excitons in Double Quantum Wells
DEFF Research Database (Denmark)
Larionov, A. V.; Bayer, M.; Hvam, Jørn Märcher
2005-01-01
The kinetics of a spin-aligned gas of interwell excitons in GaAs/AlGaAs double quantum wells (n–i–n heterostructure) is studied. The temperature dependence of the spin relaxation time for excitons, in which a photoexcited electron and hole are spatially separated between two adjacent quantum wells...
International Nuclear Information System (INIS)
Javanainen, Juha
2010-01-01
We study theoretically an atomic Bose-Einstein condensate in a double-well trap, both quantum-mechanically and classically, under conditions such that in the classical model an unstable equilibrium dissolves into large-scale oscillations of the atoms between the potential wells. Quantum mechanics alone does not exhibit such nonlinear dynamics, but measurements of the atom numbers in the potential wells may nevertheless cause the condensate to behave essentially classically.
Quantum Hall effect in InAs/AlSb double quantum well
International Nuclear Information System (INIS)
Yakunin, M.V.; Podgornykh, S.M.; Sadof'ev, Yu.G.
2009-01-01
Double quantum wells (DQWs) were first implemented in the InAs/AlSb heterosystem, which is characterized by a large Lande g factor |g|=15 of the InAs layers forming the well, much larger than the bulk g factor |g|=0.4 of the GaAs in conventional GaAs/AlGaAs DQWs. The quality of the samples is good enough to permit observation of a clear picture of the quantum Hall effect (QHE). Despite the small tunneling gap, which is due to the large barrier height (1.4 eV), features with odd filling factors ν=3,5,7, ... are present in the QHE, due to collectivized interlayer states of the DQW. When the field is rotated relative to the normal to the layers, the ν=3 state is suppressed, confirming the collectivized nature of that state and denying that it could owe its existence to a strong asymmetry of the DQW. Previously the destruction of the collectivized QHE states by a parallel field had been observed only for the ν=1 state. The observation of a similar effect for ν=3 in an InAs/AlSb DQW may be due to the large bulk g factor of InAs
Collective Behavior of Interwell Excitons in GaAs/AlGaAs Double Quantum Wells
DEFF Research Database (Denmark)
Larionov, A. V.; Timofeev, V. B.; Hvam, Jørn Märcher
2000-01-01
Photoluminescence spectra of interwell excitons in double GaAs/AlGaAs quantum wells (n-i-n structures) have been investigated (an interwell excition in these systems is an electron-hole pair spatially separated by a narrow AlAs barrier). Under resonance excitation by circular polarized light...
Correlation Effects on the Coupled Plasmon Modes of a Double Quantum Well
DEFF Research Database (Denmark)
Hill, N. P. R.; Nicholls, J. T.; Linfield, E. H.
1997-01-01
At temperatures comparable to the Fermi temperature, we have measured a plasmon enhanced Coulomb drag in a GaAs/AlGaAs double quantum well electron system. This measurement provides a probe of the many-body corrections to the coupled plasmon modes, and we present a detailed comparison between exp...
Controlled release of stored pulses in a double-quantum-well structure
International Nuclear Information System (INIS)
Carreno, F; Anton, M A
2009-01-01
We show that an asymmetric double-quantum-well structure can operate as an optical memory. The double quantum wells are modelled like an atomic ensemble of four-level atoms in the Λ-V-type configuration with vacuum-induced coherence arising from resonant tunnelling through the ultra-thin potential energy barrier between the wells. A weak quantum field connects the ground level with the two upper levels and an auxiliary classical control field connects the intermediate level with the upper levels. The quantum field can be mapped into two channels. One channel results from the adiabatic change of the control field which maps the incoming quantum field into the coherence of the two lower levels like in a Λ-type atomic ensemble. The other channel results from the mapping of the quantum field into a combination of coherences between the two upper levels and the ground level, and it is allowed by the adiabatic change of the upper level splitting via an external voltage. The possibility of releasing multiple pulses from the medium resulting from the existence of a non-evolving component of the two-channel memory is shown. A physical picture has been developed providing an explanation of the performance of the device.
Subband structure comparison between n- and p- type double delta-doped Ga As quantum wells
International Nuclear Information System (INIS)
Rodriguez V, I.; Gaggero S, L.M.
2004-01-01
We compute the electron level structure (n-type) and the hole subband structure (p-type) of double -doped GaAs (DDD) quantum wells, considering exchange effects. The Thomas-Fermi (TF), and Thomas-Fermi-Dirac (TFD) approximations have been applied in order to describe the bending of the conduction and valence band, respectively. The electron and the hole subband structure study indicates that exchange effects are more important in p-type DDD quantum wells than in n-type DDD Also our results agree with the experimental data available. (Author) 33 refs., 2 tabs., 5 figs
Hot electron and real space transfer in double-quantum-well structures
International Nuclear Information System (INIS)
Okuno, Eiichi; Sawaki, Nobuhiko; Akasaki, Isamu; Kano, Hiroyuki; Hashimoto, Masafumi.
1991-01-01
The hot electron phenomena and real space transfer (RST) effect are studied in GaAs/AlGaAs double-quantum-well (DQW) structures, in which we have two kind of quantum wells with different widths. The drift velocity and the electron temperature at liquid helium temperature are investigated as a function of the external electric field applied parallel to the heterointerface. By increasing the field, the electron temperature rises and reaches a plateau in the intermediate region, followed by further rise in the high-field region. The appearance of the plateau is attributed to the RST effect between the two quantum wells. The threshold field for the appearance of the plateau is determined by the difference energy between the quantized levels in two wells. The energy loss rate as a function of the electron temperature indicates that the RST is assisted by LO phonon scattering. (author)
Generic mechanisms of decoherence of quantum oscillations in magnetic double-well systems
International Nuclear Information System (INIS)
Chudnovsky, Eugene M.
2004-01-01
Fundamental conservation laws mandate parameter-free generic mechanisms of decoherence of quantum oscillations in double-well systems. We consider two examples: tunneling of the magnetic moment in nanomagnets and tunneling between macroscopic current states in SQUIDs. In both cases the decoherence occurs via emission of phonons and photons at the oscillation frequency. We also show that in a system of identical qubits the decoherence greatly increases due to the superradiance of electromagnetic and sound waves. Our findings have important implications for building elements of quantum computers based upon nanomagnets and SQUIDs
Generic mechanisms of decoherence of quantum oscillations in magnetic double-well systems
Energy Technology Data Exchange (ETDEWEB)
Chudnovsky, Eugene M. E-mail: chudnov@lehman.cuny.edu
2004-05-01
Fundamental conservation laws mandate parameter-free generic mechanisms of decoherence of quantum oscillations in double-well systems. We consider two examples: tunneling of the magnetic moment in nanomagnets and tunneling between macroscopic current states in SQUIDs. In both cases the decoherence occurs via emission of phonons and photons at the oscillation frequency. We also show that in a system of identical qubits the decoherence greatly increases due to the superradiance of electromagnetic and sound waves. Our findings have important implications for building elements of quantum computers based upon nanomagnets and SQUIDs.
Closed form solution for a double quantum well using Groebner basis
Energy Technology Data Exchange (ETDEWEB)
Acus, A [Institute of Theoretical Physics and Astronomy, Vilnius University, A Gostauto 12, LT-01108 Vilnius (Lithuania); Dargys, A, E-mail: dargys@pfi.lt [Center for Physical Sciences and Technology, Semiconductor Physics Institute, A Gostauto 11, LT-01108 Vilnius (Lithuania)
2011-07-01
Analytical expressions for the spectrum, eigenfunctions and dipole matrix elements of a square double quantum well (DQW) are presented for a general case when the potential in different regions of the DQW has different heights and the effective masses are different. This was achieved by using a Groebner basis algorithm that allowed us to disentangle the resulting coupled polynomials without explicitly solving the transcendental eigenvalue equation.
International Nuclear Information System (INIS)
Kasapoglu, E.; Sari, H.; Sokmen, I.
2005-01-01
The combined electric field and hydrostatic pressure effects on the binding energy of the donor impurity in double triangle quantum well (DTQW), double graded (DGQW) and double square (DSQW) GaAs-(Ga,Al)As quantum wells are calculated by using a variational technique within the effective-mass approximation. The results have been obtained in the presence of an electric field applied along the growth direction as a function of hydrostatic pressure, the impurity position, barrier width and the geometric shape of the double quantum wells
International Nuclear Information System (INIS)
Kannan, E S; Karamad, M; Kim, Gil-Ho; Farrer, I; Ritchie, D A
2010-01-01
Magnetotransport measurements were performed in two widely separated double quantum well systems with different starting disorders. In the weak magnetic field regime, a crossover from negative to positive magnetoresistance in the longitudinal resistivity was observed in the system with weak disorder when the electron densities in the neighboring wells were significantly unbalanced. The crossover was found to be the result of the exchange-energy-assisted interactions between the electrons occupying the lowest subbands in the neighboring wells. In the case of the system with strong disorder short range scattering dominated the scattering process and no such transition in longitudinal resistivity in the low magnetic field regime was observed. However, at high magnetic fields, sharp peaks were observed in the Hall resistance due to the interaction between the edge states in the quantum Hall regime.
Frequency doubling of an InGaAs multiple quantum wells semiconductor disk laser
Lidan, Jiang; Renjiang, Zhu; Maohua, Jiang; Dingke, Zhang; Yuting, Cui; Peng, Zhang; Yanrong, Song
2018-01-01
We demonstrate a good beam quality 483 nm blue coherent radiation from a frequency doubled InGaAs multiple quantum wells semiconductor disk laser. The gain chip is consisted of 6 repeats of strain uncompensated InGaAs/GaAs quantum wells and 25 pairs of GaAs/AlAs distributed Bragg reflector. A 4 × 4 × 7 mm3 type I phase-matched BBO nonlinear crystal is used in a V-shaped laser cavity for the second harmonic generation, and 210 mW blue output power is obtained when the absorbed pump power is 3.5 W. The M2 factors of the laser beam in x and y directions are about 1.04 and 1.01, respectively. The output power of the blue laser is limited by the relatively small number of the multiple quantum wells, and higher power can be expected by increasing the number of the multiple quantum wells and improving the heat management of the laser.
Quantum double-well chain: Ground-state phases and applications to hydrogen-bonded materials
International Nuclear Information System (INIS)
Wang, X.; Campbell, D.K.; Gubernatis, J.E.
1994-01-01
Extrapolating the results of hybrid quantum Monte Carlo simulations to the zero temperature and infinite-chain-length limits, we calculate the ground-state phase diagram of a system of quantum particles on a chain of harmonically coupled, symmetric, quartic double-well potentials. We show that the ground state of this quantum chain depends on two parameters, formed from the ratios of the three natural energy scales in the problem. As a function of these two parameters, the quantum ground state can exhibit either broken symmetry, in which the expectation values of the particle's coordinate are all nonzero (as would be the case for a classical chain), or restored symmetry, in which the expectation values of the particle's coordinate are all zero (as would be the case for a single quantum particle). In addition to the phase diagram as a function of these two parameters, we calculate the ground-state energy, an order parameter related to the average position of the particle, and the susceptibility associated with this order parameter. Further, we present an approximate analytic estimate of the phase diagram and discuss possible physical applications of our results, emphasizing the behavior of hydrogen halides under pressure
International Nuclear Information System (INIS)
Luna, E.; Hopkinson, M.; Ulloa, J. M.; Guzman, A.; Munoz, E.
2003-01-01
Near-infrared detection is reported for a double-barrier quantum-well infrared photodetector based on a 30-A GaAs 1-y N y (y≅0.01) quantum well. The growth procedure using plasma-assisted molecular-beam epitaxy is described. The as-grown sample exhibits a detection wavelength of 1.64 μm at 25 K. The detection peak strengthens and redshifts to 1.67 μm following rapid thermal annealing at 850 deg. C for 30 s. The detection peak position is consistent with the calculated band structure based on the band-anticrossing model for nitrogen incorporation into GaAs
Magnetospectroscopy of symmetric and anti-symmetric states in double quantum wells
Marchewka, M.; Sheregii, E. M.; Tralle, I.; Ploch, D.; Tomaka, G.; Furdak, M.; Kolek, A.; Stadler, A.; Mleczko, K.; Zak, D.; Strupinski, W.; Jasik, A.; Jakiela, R.
2008-02-01
The experimental results obtained for magnetotransport in the InGaAs/InAlAs double quantum well (DQW) structures of two different shapes of wells are reported. A beating effect occurring in the Shubnikov-de Haas (SdH) oscillations was observed for both types of structures at low temperatures in the parallel transport when the magnetic field was perpendicular to the layers. An approach for the calculation of the Landau level energies for DQW structures was developed and then applied to the analysis and interpretation of the experimental data related to the beating effect. We also argue that in order to account for the observed magnetotransport phenomena (SdH and integer quantum Hall effect), one should introduce two different quasi-Fermi levels characterizing two electron subsystems regarding the symmetry properties of their states, symmetric and anti-symmetric ones, which are not mixed by electron-electron interaction.
Improving the variational path integral approach to the quantum double-well potential
International Nuclear Information System (INIS)
Bao Jingdong; Wang Hongyu
2002-01-01
An improved variational path integral approach is developed and applied to the quantum double-well potential, in which part of the quartic term of the potential is included in the trial action. The expression of the effective classical potential (ECP) under a non-Gaussian expectation is obtained. Here the frequency and fourth-order derivative of the potential are treated as two variational parameters, determined by the minimization of the ECP at each point. We calculate the ECP, the free energy and the level splitting of a symmetrical double-well potential. It is shown that the present results are better than those of the Feynman-Kleinert Gaussian variational method. (author)
Simulation and optimization of deep violet InGaN double quantum well laser
Alahyarizadeh, Gh.; Ghazai, A. J.; Rahmani, R.; Mahmodi, H.; Hassan, Z.
2012-03-01
The performance characteristics of a deep violet InGaN double quantum well laser diode (LD) such as threshold current ( Ith), external differential quantum efficiency (DQE) and output power have been investigated using the Integrated System Engineering Technical Computer Aided Design (ISE-TCAD) software. As well as its operating parameters such as internal quantum efficiency ( ηi), internal loss ( αi) and transparency threshold current density ( J0) have been studied. Since, we are interested to investigate the mentioned characteristics and parameters independent of well and barrier thickness, therefore to reach a desired output wavelength, the indium mole fraction of wells and barriers has been varied consequently. The indium mole fractions of well and barrier layers have been considered 0.08 and 0.0, respectively. Some important parameters such as Al mole fraction of the electronic blocking layer (EBL) and cavity length which affect performance characteristics were also investigated. The optimum values of the Al mole fraction and cavity length in this study are 0.15 and 400 μm, respectively. The lowest threshold current, the highest DQE and output power which obtained at the emission wavelength of 391.5 nm are 43.199 mA, 44.99% and 10.334 mW, respectively.
Energy Technology Data Exchange (ETDEWEB)
Chen, Yuan; Deng, Li [Department of Applied Physics, East China Jiaotong University, Nanchang, 330013 (China); Chen, Aixi, E-mail: aixichen@ecjtu.jx.cn [Department of Applied Physics, East China Jiaotong University, Nanchang, 330013 (China); Institute for Quantum Computing, University of Waterloo, Ontario N2L 3G1 (Canada)
2015-02-15
We investigate the nonlinear optical phenomena of the optical bistability and multistability via spontaneously generated coherence in an asymmetric double quantum well structure coupled by a weak probe field and a controlling field. It is shown that the threshold and hysteresis cycle of the optical bistability can be conveniently controlled only by adjusting the intensity of the SGC or the controlling field. Moreover, switching between optical bistability and multistability can be achieved. These studies may have practical significance for the preparation of optical bistable switching device.
International Nuclear Information System (INIS)
Chen, Yuan; Deng, Li; Chen, Aixi
2015-01-01
We investigate the nonlinear optical phenomena of the optical bistability and multistability via spontaneously generated coherence in an asymmetric double quantum well structure coupled by a weak probe field and a controlling field. It is shown that the threshold and hysteresis cycle of the optical bistability can be conveniently controlled only by adjusting the intensity of the SGC or the controlling field. Moreover, switching between optical bistability and multistability can be achieved. These studies may have practical significance for the preparation of optical bistable switching device
Charge confinements in CdSe-ZnSe symmetric double quantum wells
International Nuclear Information System (INIS)
Tit, Nacir; Obaidat, Ihab M
2008-01-01
The bound states in the (CdSe) N w (ZnSe) N b (CdSe) N w -ZnSe(001) symmetric double quantum wells are investigated versus the well width (N w ) and the barrier thickness (N b ). A calculation based on the sp 3 s * tight-binding method which includes the spin-orbit interactions is employed to calculate the bandgap energy, quantum-confinement energy, and band structures. The studied systems possess a vanishing valence-band offset (VBO = 0) in consistency with the well known common-anion rule, and a large conduction-band offset (CBO ≅ 1 eV), which plays an essential role in the confinement of electrons within the CdSe wells. The biaxial strain, on the other hand, plays another role in confining the holes at the interfaces (within the well regions) and thus enhancing the radiative efficiency. The induced-strain energy is estimated to be ∼35 meV. More importantly, the results show that, for a fixed barrier thickness, the double wells are able to confine a pair of bound states when they are very thin. By increasing the wells' width (N w ), further, a new pair of states from the conduction-band continuum falls into the wells every time N w hits a multiple of four monolayers (more specifically, for 4n w ≤4(n+1), the number of bound states is 2(n+1), where n is an integer). On the other hand, the barrier thickness (N b ) is shown to have no effect on the number of bound states, but it solely controls their well-to-well interactions. A critical barrier thickness to switch off these latter interactions is estimated to occur at about N crit b ≅ 9 (L crit b ≅ 25∼AA. Rules governing the variation of the quantum-confinement energy versus both barrier thickness (N b ) and well width (N w ) have been derived. Our theoretical results are also shown to have excellent agreement with the available experimental photoluminescence data
Mobility modulation in inverted delta doped coupled double quantum well structure
Energy Technology Data Exchange (ETDEWEB)
Sahoo, N. [Department of Electronic Science, Berhampur University, 760007, Odisha (India); Sahu, T., E-mail: tsahu_bu@rediffmail.com [Department of Electronics and Communication Engineering, National Institute of Science and Technology, Palur Hills, Berhampur 761008, Odisha (India)
2016-10-01
We have studied the modulation of electron mobility μ as a function of the electric field perpendicular to the interface plane F{sub p} in a GaAs/AlGaAs double quantum well structure near the resonance of subband states. The functional dependence of μ on F{sub p} exhibits a minimum near the anticrossing of subband states leading to an oscillatory behavior of μ. We show that the oscillatory enhancement of μ becomes more pronounced with increase in the difference between the doping concentrations in the side barriers. The oscillation of μ also increases by varying the widths of the two wells through shifting of the position of the middle barrier. It is interesting to show that the oscillation of μ is always larger when there is doping in barrier towards the substrate side compared to that of the surface side due to the difference in the influence of the interface roughness scattering potential. Further, broadening of the central barrier width increases the peaks of the oscillation of μ mostly due to the changes in the ionized impurity scattering potential. Our results can be utilized for the performance enhancement of quantum well field effect transistor devices.
Electron states and electron Raman scattering in semiconductor double cylindrical quantum well wire
International Nuclear Information System (INIS)
Munguía-Rodríguez, M; Riera, R; Betancourt-Riera, Ri; Betancourt-Riera, Re; Nieto Jalil, J M
2016-01-01
The differential cross section for an electron Raman scattering process in a semiconductor GaAs/AlGaAs double quantum well wire is calculated, and expressions for the electronic states are presented. The system is modeled by considering T = 0 K and also with a single parabolic conduction band, which is split into a subband system due to the confinement. The gain and differential cross-section for an electron Raman scattering process are obtained. In addition, the emission spectra for several scattering configurations are discussed, and interpretations of the singularities found in the spectra are given. The electron Raman scattering studied here can be used to provide direct information about the efficiency of the lasers. (paper)
Magnetospectroscopy of double HgTe/CdHgTe quantum wells
Energy Technology Data Exchange (ETDEWEB)
Bovkun, L. S.; Krishtopenko, S. S.; Ikonnikov, A. V., E-mail: antikon@ipmras.ru; Aleshkin, V. Ya.; Kadykov, A. M. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation); Ruffenach, S.; Consejo, C.; Teppe, F.; Knap, W. [Laboratoire Charles Coulomb (L2C), UMR CNRS 5221 and UM (France); Orlita, M.; Piot, B.; Potemski, M. [Laboratoire National des Champs Magnetiques Intenses (LNCMI-G), CNRS-UJF-UPS-INSA (France); Mikhailov, N. N.; Dvoretskii, S. A. [Russian Academy of Sciences, Siberian Branch, Rzhanov Institute of Semiconductor Physics (Russian Federation); Gavrilenko, V. I. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation)
2016-11-15
The magnetoabsorption spectra in double HgTe/CdHgTe quantum wells (QWs) with normal and inverted band structures are investigated. The Landau levels in symmetric QWs with a rectangular potential profile are calculated based on the Kane 8 × 8 model. The presence of a tunnel-transparent barrier is shown to lead to the splitting of states and “doubling” of the main magnetoabsorption lines. At a QW width close to the critical one the presence of band inversion and the emergence of a gapless band structure, similar to bilayer graphene, are shown for a structure with a single QW. The shift of magnetoabsorption lines as the carrier concentration changes due to the persistent photoconductivity effect associated with a change in the potential profile because of trap charge exchange is detected. This opens up the possibility for controlling topological phase transitions in such structures.
Yakunin, M.V.; Galistu, G.; de Visser, A.
2008-01-01
Rich patterns of transformations in the structure of quantum Hall (QH) effect and magnetoresistivity under tilted magnetic fields were obtained in the InxGa1-xAs/GaAs double quantum well at mK temperatures. Local features correspond to the calculated intersections of Landau levels from different
Exciton behavior in GaAs/AlGaAs coupled double quantum wells with interface disorder
Energy Technology Data Exchange (ETDEWEB)
Lopes, E.M., E-mail: eldermantovani@yahoo.com.b [Departamento de Fisica, Universidade Estadual de Londrina, CP 6001, CEP 86051-970 Londrina, Parana (Brazil); Duarte, J.L.; Pocas, L.C.; Dias, I.F.L.; Laureto, E. [Departamento de Fisica, Universidade Estadual de Londrina, CP 6001, CEP 86051-970 Londrina, Parana (Brazil); Quivy, A.A.; Lamas, T.E. [Laboratorio de Novos Materiais Semicondutores, Instituto de Fisica, Universidade de Sao Paulo, CP 66318, CEP 05315-970 Sao Paulo (Brazil)
2010-03-15
In this work, we present a detailed study on the optical properties of two GaAs/Al{sub 0.35}Ga{sub 0.65}As coupled double quantum wells (CDQWs) with inter-well barriers of different thicknesses, by using photoluminescence (PL) spectroscopy. The two CDQWs were grown in a single sample, assuring very similar experimental conditions for measurements of both. The PL spectrum of each CDQW exhibits two recombination channels which can be accurately identified as the excitonic e{sub 1}-hh{sub 1} transitions originated from CDQWs of different effective dimensions. The PL spectra characteristics and the behavior of the emissions as a function of temperature and excitation power are interpreted in the scenario of the bimodal interface roughness model, taking into account the exciton migration between the two regions considered in this model and the difference in the potential fluctuation levels between those two regions. The details of the PL spectra behavior as a function of excitation power are explained in terms of the competition between the band gap renormalization (BGR) and the potential fluctuation effects. The results obtained for the two CDQWs, which have different degrees of potential fluctuation, are also compared and discussed.
Optical detection of symmetric and antisymmetric states in double quantum wells at room temperature
Marchewka, M.; Sheregii, E. M.; Tralle, I.; Marcelli, A.; Piccinini, M.; Cebulski, J.
2009-09-01
We studied the optical reflectivity of a specially grown double quantum well (DQW) structure characterized by a rectangular shape and a high electron density at room temperature. Assuming that the QWs depth is known, reflectivity spectra in the mid-IR range allow to carry out the precise measurements of the SAS-gap values (the energy gap between the symmetric and anti-symmetric states) and the absolute energies of both symmetric and antisymmetric electron states. The results of our experiments are in favor of the existence of the SAS splitting in the DQWs at room temperature. Here we have shown that the SAS gap increases proportionally to the subband quantum number and the optical electron transitions between symmetric and antisymmetric states belonging to different subbands are allowed. These results were used for interpretation of the beating effect in the Shubnikov-de Haas (SdH) oscillations at low temperatures (0.6 and 4.2 K). The approach to the calculation of the Landau-levels energies for DQW structures developed earlier [D. Ploch , Phys. Rev. B 79, 195434 (2009)] is used for the analysis and interpretation of the experimental data related to the beating effect. We also argue that in order to explain the beating effect in the SdH oscillations, one should introduce two different quasi-Fermi levels characterizing the two electron subsystems regarding symmetry properties of their wave functions, symmetric and antisymmetric ones. These states are not mixed neither by electron-electron interaction nor probably by electron-phonon interaction.
International Nuclear Information System (INIS)
Li Weidong; Liu Jie
2006-01-01
In the present paper we investigate the influence of measurements on the quantum dynamics of degenerate Bose atoms gases in a symmetric double well. We show that continuous measurements enhance asymmetry on the density distribution of the atoms and broaden the parameter regime for self-trapping. We term this phenomenon as nonlinear quantum Zeno effect in analog to the celebrated Zeno effect in a linear quantum system. Under discontinuous measurements, the self-trapping due to the atomic interaction in the degenerate bosons is shown to be destroyed completely. Underlying physics is revealed and possible experimental realization is discussed
International Nuclear Information System (INIS)
Reuscher, G.; Keim, M.; Fischer, F.; Waag, A.; Landwehr, G.
1995-01-01
We report the first observation of resonant tunneling through a CdTe/Cd 1-x Mg x Te double barrier, single quantum well heterostructure. Negative differential resistance is observable at temperatures below 230 K, exhibiting a peak to valley ratio of 3:1 at 4.2 K. (author)
Energy Technology Data Exchange (ETDEWEB)
Balagula, R. M.; Vinnichenko, M. Ya.; Makhov, I. S.; Sofronov, A. N., E-mail: sofronov@rphf.spbstu.ru; Firsov, D. A.; Vorobjev, L. E. [Peter the Great St. Petersburg Polytechnic University (Russian Federation)
2017-03-15
The modulation of polarized radiation by GaAs/AlGaAs structures with tunnel-coupled double quantum wells in a strong lateral electric field is studied. The spectra of the variation in the refractive index under a lateral electric field in the vicinity of the intersubband resonance are experimentally investigated.
Photoluminescence spectra of n-doped double quantum wells in a parallel magnetic field
International Nuclear Information System (INIS)
Huang, D.; Lyo, S.K.
1999-01-01
We show that the photoluminescence (PL) line shapes from tunnel-split ground sublevels of n-doped thin double quantum wells (DQW close-quote s) are sensitively modulated by an in-plane magnetic field B parallel at low temperatures (T). The modulation is caused by the B parallel -induced distortion of the electronic structure. The latter arises from the relative shift of the energy-dispersion parabolas of the two quantum wells (QW close-quote s) in rvec k space, both in the conduction and valence bands, and formation of an anticrossing gap in the conduction band. Using a self-consistent density-functional theory, the PL spectra and the band-gap narrowing are calculated as a function of B parallel , T, and the homogeneous linewidths. The PL spectra from symmetric and asymmetric DQW close-quote s are found to show strikingly different behavior. In symmetric DQW close-quote s with a high density of electrons, two PL peaks are obtained at B parallel =0, representing the interband transitions between the pair of the upper (i.e., antisymmetric) levels and that of the lower (i.e., symmetric) levels of the ground doublets. As B parallel increases, the upper PL peak develops an N-type kink, namely a maximum followed by a minimum, and merges with the lower peak, which rises monotonically as a function of B parallel due to the diamagnetic energy. When the electron density is low, however, only a single PL peak, arising from the transitions between the lower levels, is obtained. In asymmetric DQW close-quote s, the PL spectra show mainly one dominant peak at all B parallel close-quote s. In this case, the holes are localized in one of the QW close-quote s at low T and recombine only with the electrons in the same QW. At high electron densities, the upper PL peak shows an N-type kink like in symmetric DQW close-quote s. However, the lower peak is absent at low B parallel close-quote s because it arises from the inter-QW transitions. Reasonable agreement is obtained with recent
A convergent iterative solution of the quantum double-well potential
International Nuclear Information System (INIS)
Friedberg, R.; Lee, T.D.; Zhao, W.Q.; Cimenser, A.
2001-01-01
We present a new convergent iterative solution for the two lowest quantum wave functions ψ ev and ψ od of the Hamiltonian with a quartic double-well potential V in one dimension. By starting from a trial function, which is by itself the exact lowest even or odd eigenstate of a different Hamiltonian with a modified potential V+δV, we construct the Green's function for the modified potential. The true wave functions, ψ ev or ψ od , then satisfy a linear inhomogeneous integral equation, in which the inhomogeneous term is the trial function, and the kernel is the product of the Green's function times the sum of δV, the potential difference, and the corresponding energy shift. By iterating this equation we obtain successive approximations to the true wave function; furthermore, the approximate energy shift is also adjusted at each iteration so that the approximate wave function is well behaved everywhere. We are able to prove that this iterative procedure converges for both the energy and the wave function at all x. The effectiveness of this iterative process clearly depends on how good the trial function is, or equivalently, how small the potential difference δV is. Although each iteration brings a correction smaller than the previous one by a factor proportional to the parameter that characterizes the smallness of δV, it is not a power series expansion in the parameter. The exact tunneling information of the modified potential is, of course, contained in the Green's function; by adjusting the kernel of the integral equation via the energy shift at each iteration, we bring enough of this information into the calculation so that each approximate wave function is exponentially tuned. This is the underlying reason why the present method converges, while the usual power series expansion does not
International Nuclear Information System (INIS)
Wang Zhigang; Zheng Zhiren; Yu Junhua
2007-01-01
The transient gain property of a weak probe field in an asymmetric semiconductor coupled double quantum well structure is reported. The transient process of the system, which is induced by the external coherent coupling field, shows the property of no inverse gain. We find that the transient behavior of the probe field can be tuned by the change of tunneling barrier. Both the amplitude of the transient gain and the frequency of the oscillation can be affected by the lifetime broadening
Ahia, Chinedu Christian; Tile, Ngcali; Botha, Johannes R.; Olivier, E. J.
2018-04-01
The structural and photoluminescence (PL) characterization of InGaSb quantum well (QW) structures grown on GaSb substrate (100) using atmospheric pressure Metalorganic Vapor Phase Epitaxy (MOVPE) is presented. Both structures (single and double-InGaSb QWs) were inadvertently formed during an attempt to grow capped InSb/GaSb quantum dots (QDs). In this work, 10 K PL peak energies at 735 meV and 740 meV are suggested to be emissions from the single and double QWs, respectively. These lines exhibit red shifts, accompanied by a reduction in their full-widths at half-maximum (FWHM) as the excitation power decreases. The presence of a GaSb spacer in the double QW was found to increase the strength of the PL emission, which consequently gives rise to a reduced blue-shift and broadening of the PL emission line observed for the double QW with an increase in laser power, while the low thermal activation energy for the quenching of the PL from the double QW is attributed to the existence of threading dislocations, as seen in the bright field TEM image for this sample.
Directory of Open Access Journals (Sweden)
R. K. Nayak
2015-11-01
Full Text Available We show that sharp nonmonotic variation of low temperature electron mobility μ can be achieved in GaAs/AlxGa1-xAs barrier delta-doped double quantum well structure due to quantum mechanical transfer of subband electron wave functions within the wells. We vary the potential profile of the coupled structure as a function of the doping concentration in order to bring the subbands into resonance such that the subband energy levels anticross and the eigen states of the coupled structure equally share both the wells thereby giving rise to a dip in mobility. When the wells are of equal widths, the dip in mobility occurs under symmetric doping of the side barriers. In case of unequal well widths, the resonance can be obtained by suitable asymmetric variation of the doping concentrations. The dip in mobility becomes sharp and also the wavy nature of mobility takes a rectangular shape by increasing the barrier width. We show that the dip in mobility at resonance is governed by the interface roughness scattering through step like changes in the subband mobilities. It is also gratifying to show that the drop in mobility at the onset of occupation of second subband is substantially supressed through the quantum mechanical transfer of subband wave functions between the wells. Our results can be utilized for performance enhancement of coupled quantum well devices.
Energy Technology Data Exchange (ETDEWEB)
Ullah, S.; Gusev, G. M.; Hernandez, F. G. G., E-mail: felixggh@if.usp.br [Instituto de Física, Universidade de São Paulo, Caixa Postal 66318, CEP 05315-970 São Paulo, SP (Brazil); Bakarov, A. K. [Institute of Semiconductor Physics and Novosibirsk State University, Novosibirsk 630090 (Russian Federation)
2016-06-07
We investigated the spin coherence of high-mobility two-dimensional electron gases confined in multilayer GaAs quantum wells. The dynamics of the spin polarization was optically studied using pump-probe techniques: time-resolved Kerr rotation and resonant spin amplification. For double and triple quantum wells doped beyond the metal-to-insulator transition, the spin-orbit interaction was tailored by the sample parameters of structural symmetry (Rashba constant), width, and electron density (Dresselhaus linear and cubic constants) which allow us to attain long dephasing times in the nanoseconds range. The determination of the scales, namely, transport scattering time, single-electron scattering time, electron-electron scattering time, and spin polarization decay time further supports the possibility of using n-doped multilayer systems for developing spintronic devices.
Tiutiunnyk, A.; Mora-Ramos, M. E.; Morales, A. L.; Duque, C. M.; Restrepo, R. L.; Ungan, F.; Martínez-Orozco, J. C.; Kasapoglu, E.; Duque, C. A.
2017-02-01
In this work we shall present a study of inelastic light scattering involving inter-subband electron transitions in coupled GaAs-(Ga,Al)As quantum wells. Calculations include the electron related Raman differential cross section and Raman gain. The effects of an external nonresonant intense laser field are used in order to tune these output properties. The confined electron states will be described by means of a diagonalization procedure within the effective mass and parabolic band approximations. It is shown that the application of the intense laser field can produce values of the intersubband electron Raman gain above 400 cm-1. The system proposed here is an alternative choice for the development of AlxGa1-xAs semiconductor laser diodes that can be tuned via an external nonresonant intense laser field.
International Nuclear Information System (INIS)
Nishibayashi, K.; Aoshima, I.; Souma, I.; Murayama, A.; Oka, Y.
2006-01-01
Dynamics of spin injection has been investigated in a double quantum well (DQW) composed of a diluted magnetic semiconductor by the pump-probe transient absorption spectroscopy in magnetic field. The DQW consists of a non-magnetic well (NMW) of CdTe and a magnetic well (MW) of Cd 0.92 Mn 0.08 Te. The MW shows a transient absorption saturation in the exciton band for more than 200 ps after the optical pumping, while the exciton photoluminescence does not arise from the MW. In the NMW, the circular polarization degree of the transient absorption saturation shows an increase with increasing time. The results are interpreted by the individual tunneling of spin-polarized electrons and holes from the MW to the NMW with different tunneling times. Depolarization processes of the carrier spins in the MW and the NMW are also discussed
On the donor states in double InxGa1−xN/InyGa1−yN/GaN staggered quantum wells
International Nuclear Information System (INIS)
Yıldırım, Hasan; Aslan, Bulent
2013-01-01
We have calculated the binding energies of the donor states, 1s and 2p ± , with respect to the lowest sub-band energy in a double quantum well composed of wurtzite InGaN staggered quantum wells with GaN barriers. All the energies and the wavefunctions were calculated by applying the variational methods. We have found that the binding energies of donors placed in the right quantum well are larger and independent of the middle barrier width of up to 40 Å. This is because of the strong built-in electric field which brings more confinement to the donor wavefunctions in the right staggered quantum well. The binding energies are found to be strong functions of the donor position in the double quantum well system which is the consequence of the large asymmetry introduced by the built-in electric field. (paper)
Highly strained InAlP/InGaAs-based coupled double quantum wells on InP substrates
Gozu, Shin-ichiro; Mozume, Teruo
2018-05-01
InAlP/InGaAs based coupled double quantum wells (CDQWs) are proposed for optelectronic devices utilizing intersubband transitions. The aim of the proposed CDQW structure was to reduce the Al volume as compared with that in InGaAs/AlAsSb(AlAs/InAlAs) based CDQWs. By careful consideration of the band gap energy as well as conduction band offset and lattice constants for III–V materials, highly strained InAlP was chosen as the barrier material. With the appropriate CDQW structure and under the optimized growth conditions, proposed CDQWs exhibited clear X-ray diffraction satellite peaks, and almost identical optical absorption spectrum as compared with the InGaAs/AlAs/InAlAs CDQWs.
Near-infrared intersubband transitions in InGaAs-AlAs-InAlAs double quantum wells
International Nuclear Information System (INIS)
Semtsiv, M.P.; Ziegler, M.; Masselink, W.T.; Georgiev, N.; Dekorsy, T.; Helm, M.
2005-01-01
Intersubband optical transitions at short wavelengths in strain-compensated In 0.70 Ga 0.30 As--AlAs double quantum wells are investigated by means of mid-infrared absorption. Trade-offs between achieving a high transition energy and a large oscillator strength of the two highest-energy intersubband transitions using our strain-compensation approach are analyzed as a function of the widths of the two wells. Two design strategies leading to relatively strong intersubband optical transitions at 800 meV, 1.55 μm, are described and the corresponding structures grown using gas-source molecular-beam epitaxy on (001)InP are investigated. The strongest intersubband transitions obtained experimentally are generally between 300 and 600 meV, 2-4 μm. Significant oscillator strength, however, also extends out to 800 meV, 1.55 μm
Phase Diagram of the Bose Condensation of Interwell Excitons in GaAs/AlGaAs Double Quantum Wells
DEFF Research Database (Denmark)
Dremin, A. A.; Timofeev, V. B.; Larionov, A. V.
2002-01-01
The luminescence of interwell excitons in GaAs/AlGaAs double quantum wells (n–i–n heterostructures) with large-scale fluctuations of random potential in the heteroboundary planes was studied at low temperatures down to 0.5 K. The properties of excitons whose photoexcited electron and hole...... was coated with a metal mask containing special openings (windows) of a micron size or smaller. Both photoexcitation and observation of luminescence were performed through these windows by the fiber optic technique. At low pumping powers, the interwell excitons were strongly localized because of the residual...... charged impurities, and the corresponding photoluminescence line was nonuniformly broadened. As the laser excitation power increased, a narrow line due to delocalized excitons arose in a threshold-like manner, after which its intensity rapidly increased with growing pumping and the line itself narrowed...
In-plane magnetic field-dependent magnetoresistance of gated asymmetric double quantum wells
Czech Academy of Sciences Publication Activity Database
Krupko, Yuriy; Smrčka, Ludvík; Vašek, Petr; Svoboda, Pavel; Cukr, Miroslav; Jansen, L.
2004-01-01
Roč. 22, - (2004), s. 44-47 ISSN 1386-9477. [International Conference on Electronic Properties of Two-Dimensional Systems /15./. Nara, 14.07.2003-18.07.2003] R&D Projects: GA ČR GA202/01/0754 Institutional research plan: CEZ:AV0Z1010914 Keywords : double - layer two-dimensional electron system * magnetotransport * gate voltage Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 0.898, year: 2004
Interlayer Hall effect in double quantum wells subject to in-plane magnetic fields
Czech Academy of Sciences Publication Activity Database
Kolorenč, Jindřich; Smrčka, Ludvík; Středa, Pavel
2002-01-01
Roč. 66, č. 8 (2002), s. 085301-1 - 085301-7 ISSN 0163-1829 R&D Projects: GA ČR GA202/01/0754; GA ČR GA202/01/0764 Institutional research plan: CEZ:AV0Z1010914 Keywords : double - layer two-dimensional electron system * magnetotransport * Hall effect Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.327, year: 2002
International Nuclear Information System (INIS)
Schönhöbel, A.M.; Girón-Sedas, J.A.; Porras-Montenegro, N.
2014-01-01
We have calculated exactly the energy of electron quasistationary states in GaAs–(Ga,Al)As single and double quantum wells under the action of applied electric field and hydrostatic pressure by using Enderlein's method to solve the Schrödinger equation. Numerical results were obtained by means of the density of states as a function of the applied electric field, hydrostatic pressure, Al concentration and the structure geometry as well. We found two regions very well differentiated in energy; for lower values there are quasistationary states and for higher, fast oscillations. The quasistationary ground and excited energy states diminish with the well width and the applied electric field, and increase with the confinement potential and the width of the central barrier in the double quantum well. In the latter structure we observed the anti-crossing between the first and second quasistationary energy levels, phenomena which certainly depend on the central barrier width. Otherwise, in the region of fast oscillations, the period of Franz–Keldysh oscillation type in single quantum well and double quantum well increases with the applied electric field and the number of nodes augments with the well width. Also, we found that the increase of the central barrier height in the double quantum well diminishes the number of nodes, while the applied hydrostatic pressure changes the length of pulsations in both structures.
Christopher, Heike; Kovalchuk, Evgeny V; Wenzel, Hans; Bugge, Frank; Weyers, Markus; Wicht, Andreas; Peters, Achim; Tränkle, Günther
2017-07-01
We present a compact, mode-locked diode laser system designed to emit a frequency comb in the wavelength range around 780 nm. We compare the mode-locking performance of symmetric and asymmetric double quantum well ridge-waveguide diode laser chips in an extended-cavity diode laser configuration. By reverse biasing a short section of the diode laser chip, passive mode-locking at 3.4 GHz is achieved. Employing an asymmetric double quantum well allows for generation of a mode-locked optical spectrum spanning more than 15 nm (full width at -20 dB) while the symmetric double quantum well device only provides a bandwidth of ∼2.7 nm (full width at -20 dB). Analysis of the RF noise characteristics of the pulse repetition rate shows an RF linewidth of about 7 kHz (full width at half-maximum) and of at most 530 Hz (full width at half-maximum) for the asymmetric and symmetric double quantum well devices, respectively. Investigation of the frequency noise power spectral density at the pulse repetition rate shows a white noise floor of approximately 2100 Hz 2 /Hz and of at most 170 Hz 2 /Hz for the diode laser employing the asymmetric and symmetric double quantum well structures, respectively. The pulse width is less than 10 ps for both devices.
Energy Technology Data Exchange (ETDEWEB)
Yablonsky, A. N., E-mail: yablonsk@ipmras.ru; Zhukavin, R. Kh.; Bekin, N. A.; Novikov, A. V.; Yurasov, D. V.; Shaleev, M. V. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation)
2016-12-15
For SiGe/Si(001) epitaxial structures with two nonequivalent SiGe quantum wells separated by a thin Si barrier, the spectral and time characteristics of interband photoluminescence corresponding to the radiative recombination of excitons in quantum wells are studied. For a series of structures with two SiGe quantum wells different in width, the characteristic time of tunneling of charge carriers (holes) from the narrow quantum well, distinguished by a higher exciton recombination energy, to the wide quantum well is determined as a function of the Si barrier thickness. It is shown that the time of tunneling of holes between the Si{sub 0.8}5Ge{sub 0.15} layers with thicknesses of 3 and 9 nm steadily decreases from ~500 to <5 ns, as the Si barrier thickness is reduced from 16 to 8 nm. At intermediate Si barrier thicknesses, an increase in the photoluminescence signal from the wide quantum well is observed, with a characteristic time of the same order of magnitude as the luminescence decay time of the narrow quantum well. This supports the observation of the effect of the tunneling of holes from the narrow to the wide quantum well. A strong dependence of the tunneling time of holes on the Ge content in the SiGe layers at the same thickness of the Si barrier between quantum wells is observed, which is attributed to an increase in the effective Si barrier height.
Phase diagram of a two-dimensional liquid in GaAs/AlxGa1-xAs biased double quantum wells
DEFF Research Database (Denmark)
Timofeev, V. B.; Larionov, A. V.; Alessi, M. G.
2000-01-01
Photoluminescence (PL) and PL excitation (PLE) measurements have been performed in GaAs/AlxGa1-xAs biased double quantum well heterostructures. The recombination of electrons, e, with holes, h, located in the same or in two adjacent wells, has been investigated for different exciting power...
Donor states in a semimagnetic Cd1 -xinMnxin Te /Cd1 -xoutMnxout Te Double Quantum Well
Kalpana, Panneer Selvam; Nithiananthi, Perumal; Jayakumar, Kalyanasundaram
2017-02-01
The theoretical investigation has been carried out on the binding energy of donor associated with the electrons confined in a Cd1 -xinMnxin Te /Cd1 -xoutMnxout Te Double Quantum Well (DQW) as a function of central barrier width for various well dimensions and impurity locations in the barrier and the well. The magnetic field can act as a tool to continuously change the interwell coupling inside this DQW systems and its effect on donor binding has also been studied. Moreover, the polaronic corrections, which is due to the strong exchange interaction between the magnetic moment of Mn2+ ion and the spin of the confined carrier, to the binding energy of the hydrogenic donor impurity has also been estimated with and without the application of magnetic field. The binding energy of the donor impurity is determined by solving the Schrodinger equation variationally in the effective mass approximation and the effect due to Bound Magnetic Polaron (BMP) is included using mean field theory with the modified Brillouin function. The results are reported and discussed.
Charged excitonic complexes in GaAs/Al0.35Ga0.65As p-i-n double quantum wells
DEFF Research Database (Denmark)
Timofeev, V. B.; Larionov, A. V.; Alessi, M. Grassi
1999-01-01
Photoluminescence (PL) and PL excitation measurements (PLE) have been performed in GaAs/AlxGa1-xAs double quantum well (QW) structures under different applied electric fields. An emission due to charged excitons (trions) has been identified in the PL spectra similar to 3 meV below the heavy...
Energy Technology Data Exchange (ETDEWEB)
Reuscher, G.; Keim, M.; Fischer, F.; Waag, A.; Landwehr, G. [Physikalishes Institut der Universitaet Wuerzburg am Hubland, Wuerzburg (Germany)
1995-12-31
We report the first observation of resonant tunneling through a CdTe/Cd{sub 1-x}Mg{sub x}Te double barrier, single quantum well heterostructure. Negative differential resistance is observable at temperatures below 230 K, exhibiting a peak to valley ratio of 3:1 at 4.2 K. (author). 16 refs, 2 figs.
Peeters, F M; Varga, K
2002-01-01
The ground-state energy of three-particle systems consisting of electrons and holes as found in semiconducting quantum wells is studied. The degree of confinement is determined by the quantum-well width and we can vary the dimensionality of the system from two to three dimensions. The energy levels of the system can further be altered by the application of an external magnetic field which is directed perpendicular to the well. Refs.5 (author)
Directory of Open Access Journals (Sweden)
Daijiro Fukuda
2004-01-01
Full Text Available Using diagrammatic pictures of tensor contractions, we consider a Hopf algebra (Aop⊗ℛλA** twisted by an element ℛλ∈A*⊗Aop corresponding to a Hopf algebra morphism λ:A→A. We show that this Hopf algebra is quasitriangular with the universal R-matrix coming from ℛλ when λ2=idA, generalizing the quantum double construction which corresponds to the case λ=idA.
Zory, Jr, Peter S; Kelley, Paul
1993-01-01
This book provides the information necessary for the reader to achieve a thorough understanding of all aspects of QW lasers - from the basic mechanism of optical gain, through the current technolgoical state of the art, to the future technologies of quantum wires and quantum dots. In view of the growing importance of QW lasers, this book should be read by all those with an active interest in laser science and technology, from the advanced student to the experienced laser scientist.* The first comprehensive book-length treatment of quantum well lasers* Provides a detailed treatment
DEFF Research Database (Denmark)
Timofeev, V.B.; Larionov, A.V.; Ioselevich, A.S.
1998-01-01
narrowing with temperature increase from 4.5 to 30 K. A theoretical model is presented which explains the observed narrowing in terms of lateral thermally activated tunneling of spatially separated e-h pairs localized by random potential fluctuations in the quantum wells. (C) 1998 American Institute......The interwell radiative recombination from biased double quantum wells (DQW) in pin GaAs/AlGaAs heterostructures is investigated at different temperatures and external electrical fields. The luminescence line of interwell recombination of spatially separated electron-hole pairs exhibits systematic...
Persistent photoeffects in p-i-n GaAs/AlGaAs heterostructures with double quantum wells
DEFF Research Database (Denmark)
Dorozhkin, S.I.; Timofeev, V.B.; Hvam, Jørn Märcher
2001-01-01
Abrupt changes in the capacitance between the p and n regions were observed in a planar p-i-n GaAs/AlGaAs heterostructure with two tunneling-coupled quantum wells exposed to laser irradiation (lambda = 633 nm). These changes can be caused by variations in both temperature (in the vicinity of T...
Energy Technology Data Exchange (ETDEWEB)
Lopez, S.Y. [Grupo de Educacion en Ciencias Experimentales y Matematicas-GECEM, Facultad de Educacion, Universidad de Antioquia, AA 1226 Medellin (Colombia); Mora-Ramos, M.E. [Facultad de Ciencias, Universidad Autonoma del Estado de Morelos, Av. Universidad 1001, CP 62209, Cuernavaca, Morelos (Mexico); Duque, C.A., E-mail: cduque@fisica.udea.edu.c [Instituto de Fisica, Universidad de Antioquia, AA 1226 Medellin (Colombia)
2009-12-15
The photoluminescence energy transitions in GaAs-Ga{sub 1-x}Al{sub x}As coupled double quantum wells are presented by considering the simultaneous effects of applied electric and magnetic fields and hydrostatic pressure. Calculations have been made in the framework of the effective mass and parabolic band approximations and using a variational procedure. The electric field is taken to be oriented along the growth direction of the heterostructure whereas for the magnetic field both in-plane and in-growth directions have been considered. The results show that the hydrostatic pressure and the applied electric field are two useful tools to tune the direct and indirect exciton transitions in such heterostructures. Our results are in good agreement with previous experimental findings in double quantum wells under applied electric field and hydrostatic pressure.
International Nuclear Information System (INIS)
Lopez, S.Y.; Mora-Ramos, M.E.; Duque, C.A.
2009-01-01
The photoluminescence energy transitions in GaAs-Ga 1-x Al x As coupled double quantum wells are presented by considering the simultaneous effects of applied electric and magnetic fields and hydrostatic pressure. Calculations have been made in the framework of the effective mass and parabolic band approximations and using a variational procedure. The electric field is taken to be oriented along the growth direction of the heterostructure whereas for the magnetic field both in-plane and in-growth directions have been considered. The results show that the hydrostatic pressure and the applied electric field are two useful tools to tune the direct and indirect exciton transitions in such heterostructures. Our results are in good agreement with previous experimental findings in double quantum wells under applied electric field and hydrostatic pressure.
Feyer, Vitaliy; Prince, Kevin C; Coreno, Marcello; Melandri, Sonia; Maris, Assimo; Evangelisti, Luca; Caminati, Walther; Giuliano, Barbara M; Kjaergaard, Henrik G; Carravetta, Vincenzo
2018-02-01
We have performed core level photoemission spectroscopy of gaseous acetylacetone, its fully deuterated form, and two derivatives, benzoylacetone and dibenzoylmethane. These molecules show intramolecular hydrogen bonds, with a proton located in a double-well potential, whose barrier height is different for the three compounds. This has allowed us to examine the effect of the double-well potential on photoemission spectra. Two distinct O 1s core hole peaks are observed, previously assigned to two chemical states of oxygen. We provide an alternative assignment of the double-peak structure of O 1s spectra by taking full account of the extended nature of the wave function associated with the nuclear motion of the proton, the shape of the ground and final state potentials in which the proton is located, and the nonzero temperature of the samples. The peaks are explained in terms of an unusual Franck-Condon factor distribution.
International Nuclear Information System (INIS)
Rojas-Briseño, J.G.; Martínez-Orozco, J.C.; Rodríguez-Vargas, I.; Mora-Ramos, M.E.; Duque, C.A.
2013-01-01
In this work we are reporting the energy level spectrum for a quantum system consisting of an n-type double δ-doped quantum well with a Schottky barrier potential in a Gallium Arsenide matrix. The calculated states are taken as the basis for the evaluation of the linear and third-order nonlinear contributions to the optical absorption coefficient and to the relative refractive index change, making particular use of the asymmetry of the potential profile. These optical properties are then reported as a function of the Schottky barrier height (SBH) and the separation distance between the δ-doped quantum wells. Also, the effects of the application of hydrostatic pressure are studied. The results show that the amplitudes of the resonant peaks are of the same order of magnitude of those obtained in the case of single δ-doped field effect transistors; but tailoring the asymmetry of the confining potential profile allows the control the resonant peak positions
Energy Technology Data Exchange (ETDEWEB)
Rojas-Briseño, J.G.; Martínez-Orozco, J.C.; Rodríguez-Vargas, I. [Unidad Académica de Física, Universidad Autónoma de Zacatecas, Calzada Solidaridad esquina con Paseo la Bufa S/N, C.P. 98060, Zacatecas, Zac. (Mexico); Mora-Ramos, M.E. [Facultad de Ciencias, Universidad Autónoma del Estado de Morelos, Av. Universidad 1001, CP 62209, Cuernavaca, Morelos (Mexico); Instituto de Física, Universidad de Antioquia, AA 1226, Medellín (Colombia); Duque, C.A., E-mail: cduque@fisica.udea.edu.co [Instituto de Física, Universidad de Antioquia, AA 1226, Medellín (Colombia)
2013-09-01
In this work we are reporting the energy level spectrum for a quantum system consisting of an n-type double δ-doped quantum well with a Schottky barrier potential in a Gallium Arsenide matrix. The calculated states are taken as the basis for the evaluation of the linear and third-order nonlinear contributions to the optical absorption coefficient and to the relative refractive index change, making particular use of the asymmetry of the potential profile. These optical properties are then reported as a function of the Schottky barrier height (SBH) and the separation distance between the δ-doped quantum wells. Also, the effects of the application of hydrostatic pressure are studied. The results show that the amplitudes of the resonant peaks are of the same order of magnitude of those obtained in the case of single δ-doped field effect transistors; but tailoring the asymmetry of the confining potential profile allows the control the resonant peak positions.
Quantum particle-number fluctuations in a two-component Bose gas in a double-well potential
International Nuclear Information System (INIS)
Zin, Pawel; Oles, Bartlomiej; Sacha, Krzysztof
2011-01-01
A two-component Bose gas in a double-well potential with repulsive interactions may undergo a phase separation transition if the interspecies interactions outweigh the intraspecies ones. We analyze the transition in the strong interaction limit within the two-mode approximation. Numbers of particles in each potential well are equal and constant. However, at the transition point, the ground state of the system reveals huge fluctuations of numbers of particles belonging to the different gas components; that is, the probability for observation of any mixture of particles in each potential well becomes uniform.
Park, Seoung-Hwan; Ahn, Doyeol
2018-05-01
Ultraviolet light emission characteristics of lattice-matched BxAlyGa1-x-y N/AlN quantum well (QW) structures with double AlGaN delta layers were investigated theoretically. In contrast to conventional single dip-shaped QW structure where the reduction effect of the spatial separation between electron and hole wave functions is negligible, proposed double dip-shaped QW shows significant enhancement of the ultraviolet light emission intensity from a BAlGaN/AlN QW structure due to the reduced spatial separation between electron and hole wave functions. The emission peak of the double dip-shaped QW structure is expected to be about three times larger than that of the conventional rectangular AlGaN/AlN QW structure.
International Nuclear Information System (INIS)
Tangarife, E.; Duque, C.A.
2010-01-01
This work is concerned with the theoretical study of the combined effects of applied electric field and hydrostatic pressure on the binding energy and impurity polarizability of a donor impurity in laterally coupled double InAs/GaAs quantum-well wires. calculations have been made in the effective mass and parabolic band approximations and using a variational method. The results are reported for different configurations of wire and barriers widths, impurity position, and electric field and hydrostatic pressure strengths. Our results show that for symmetrical structures the binding energy is an even function of the impurity position along the growth direction of the structure. Also, we found that for hydrostatic pressure strength up to 38 kbar, the binding energy increases linearly with hydrostatic pressure, while for larger values of hydrostatic pressure the binding energy has a nonlinear behavior. Finally, we found that the hydrostatic pressure can increase the coupling between the two parallel quantum well wires.
International Nuclear Information System (INIS)
Friedberg, R.; Lee, T.D.
2003-01-01
We present a new and simpler proof for the convergent iterative solution of the one-dimensional degenerate double-well potential. This new proof depends on a general theorem, called the hierarchy theorem, that shows the successive stages in the iteration to form a monotonically increasing sequence of approximations to the energy and to the wavefunction at any point x. This important property makes possible a much simpler proof of convergence than the one given before in the literature. The hierarchy theorem proven in this paper is applicable to a much wider class of potentials which includes the quartic potential
Directory of Open Access Journals (Sweden)
Dan Alexandru Anghel
2012-01-01
Full Text Available In semiconductor laser modeling, a good mathematical model gives near-reality results. Three methods of modeling solutions from the rate equations are presented and analyzed. A method based on the rate equations modeled in Simulink to describe quantum well lasers was presented. For different signal types like step function, saw tooth and sinus used as input, a good response of the used equations is obtained. Circuit model resulting from one of the rate equations models is presented and simulated in SPICE. Results show a good modeling behavior. Numerical simulation in MathCad gives satisfactory results for the study of the transitory and dynamic operation at small level of the injection current. The obtained numerical results show the specific limits of each model, according to theoretical analysis. Based on these results, software can be built that integrates circuit simulation and other modeling methods for quantum well lasers to have a tool that model and analysis these devices from all points of view.
Martínez-Orozco, J. C.; Rojas-Briseño, J. G.; Rodríguez-Magdaleno, K. A.; Rodríguez-Vargas, I.; Mora-Ramos, M. E.; Restrepo, R. L.; Ungan, F.; Kasapoglu, E.; Duque, C. A.
2017-11-01
In this paper we are reporting the computation for the Nonlinear Optical Rectification (NOR) and the Second and Third Harmonic Generation (SHG and THG) related with electronic states of asymmetric double Si-δ-doped quantum well in a GaAs matrix when this is subjected to an in-plane (x-oriented) constant magnetic field effect. The work is performed in the effective mass and parabolic band approximations in order to compute the electronic structure for the system by a diagonalization procedure. The expressions for the nonlinear optical susceptibilities, χ0(2), χ2ω(2), and χ3ω(3), are those arising from the compact matrix density formulation and stand for the NOR, SHG, and THG, respectively. This asymmetric double δ-doped quantum well potential profile actually exhibits nonzero NOR, SHG, and THG responses which can be easily controlled by the in-plane (x-direction) externally applied magnetic field. In particular we find that for the chosen configuration the harmonic generation is in the far-infrared/THz region, thus and becoming suitable building blocks for photodetectors in this range of the electromagnetic spectra.
Energy Technology Data Exchange (ETDEWEB)
Miranda, Guillermo L. [Fisica Teorica y Aplicada, Escuela de Ingenieria de Antioquia, A.A. 7516 Medellin (Colombia); Instituto de Fisica, Universidad de Antioquia, AA 1226 Medellin (Colombia); Mora-Ramos, Miguel E., E-mail: memora@uaem.mx [Fisica Teorica y Aplicada, Escuela de Ingenieria de Antioquia, A.A. 7516 Medellin (Colombia); Facultad de Ciencias, Universidad Autonoma del Estado de Morelos, Av. Universidad 1001, C.P. 62209 Cuernavaca, Morelos (Mexico); Instituto de Fisica, Universidad de Antioquia, AA 1226 Medellin (Colombia); Duque, Carlos A. [Instituto de Fisica, Universidad de Antioquia, AA 1226 Medellin (Colombia)
2013-01-15
In this work the variations of the exciton-related optical absorption and the change of the refractive index in a GaAs-(Ga,Al)As double quantum well as functions of the geometric parameters of the heterostructure are investigated. The variational method is applied within the framework of the parabolic band and effective mass approximations, in order to obtain the 1s-like exciton energy spectrum. The outcome for the related optical coefficients shows a quenched and redshifted light absorption as a result of the increment in the inner barrier and right-hand well widths, with the possibility of an enhancement of the excitonic contribution to the relative change in the refractive index.
Energy Technology Data Exchange (ETDEWEB)
KIM,YONGMIN; PERRY,C.H.; SIMMONS,JERRY A.; KLEM,JOHN F.
2000-05-11
In-plane magnetic field photoluminescence spectra from n series of n-type modulation doped GaAs/Al{sub 0.3}Ga{sub 0.7}As coupled double quantum wells show distinctive doublet structures related to the tunnel-split ground sub-level states. The magnetic field behavior of the upper transition from the antisymmetric state strongly depends on sample mobility. In a lower mobility sample, the transition energy displays an N-type kink with field (namely a maximum followed by a minimum), whereas higher mobility samples have a linear dependence. The former is attributed to a coupling mechanism due to homogeneous broadening of the electron and hole states. The results are in good agreement with recent theoretical calculations.
Energy Technology Data Exchange (ETDEWEB)
Yablonsky, A. N., E-mail: yablonsk@ipm.sci-nnov.ru; Morozov, S. V.; Gaponova, D. M.; Aleshkin, V. Ya. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation); Shengurov, V. G.; Zvonkov, B. N.; Vikhrova, O. V.; Baidus’, N. V. [Lobachevsky State University of Nizhny Novgorod (Russian Federation); Krasil’nik, Z. F. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation)
2016-11-15
We report the observation of stimulated emission in heterostructures with double InGaAs/GaAsSb/GaAs quantum wells, grown on Si(001) substrates with the application of a relaxed Ge buffer layer. Stimulated emission is observed at 77 K under pulsed optical pumping at a wavelength of 1.11 μm, i.e., in the transparency range of bulk silicon. In similar InGaAs/GaAsSb/GaAs structures grown on GaAs substrates, room-temperature stimulated emission is observed at 1.17 μm. The results obtained are promising for integration of the structures into silicon-based optoelectronics.
The quantum double in integrable quantum field theory
International Nuclear Information System (INIS)
Bernard, D.; LeClair, A.
1993-01-01
Various aspects of recent works on affine quantum group symmetry of integrable 2D quantum field theory are reviewed and further clarified. A geometrical meaning is given to the quantum double, and other properties of quantum groups. The S-matrix is identified with the universal R-matrix. Multiplicative presentations of the yangian double are analyzed. (orig.)
An exactly soluble model of a shallow double well
Energy Technology Data Exchange (ETDEWEB)
Muñoz-Vega, R., E-mail: rodrigo.munoz@uacm.edu.mx [Universidad Autónoma de la Ciudad de México, Centro Histórico, Fray Servando Teresa de Mier 92, Col. Centro, Del. Cuauhtémoc, México DF, CP 06080 (Mexico); López-Chávez, E., E-mail: elopezc@hotmail.com [Universidad Autónoma de la Ciudad de México, Centro Histórico, Fray Servando Teresa de Mier 92, Col. Centro, Del. Cuauhtémoc, México DF, CP 06080 (Mexico); Salinas-Hernández, E., E-mail: esalinas@ipn.mx [ESCOM-IPN, Av Juan de Dios Bátiz s/n, Unidad Profesional Adolfo López Mateos, Col Lindavista, Del G A Madero, México DF, CP 07738 (Mexico); Flores-Godoy, J.-J., E-mail: job.flores@ibero.mx [Departamento de Física y Matemáticas, Universidad Iberoamericana, Prol. Paseo de la Reforma 880, Col Lomas de Santa Fe, Del A Obregón, México DF, CP 01219 (Mexico); Fernández-Anaya, G., E-mail: guillermo.fernandez@ibero.com [Departamento de Física y Matemáticas, Universidad Iberoamericana, Prol. Paseo de la Reforma 880, Col Lomas de Santa Fe, Del A Obregón, México DF, CP 01219 (Mexico)
2014-06-13
Shallow one-dimensional double-well potentials appear in atomic and molecular physics and other fields. Unlike the “deep” wells of macroscopic quantum coherent systems, shallow double wells need not present low-lying two-level systems. We argue that this feature, the absence of a low-lying two-level system in certain shallow double wells, may allow the finding of new test grounds for quantum mechanics in mesoscopic systems. We illustrate the above ideas with a family of shallow double wells obtained from reflectionless potentials through the Darboux–Bäcklund transform. - Highlights: • We present double wells not conforming to the low-lying two-state system model. • Models similar to ours appear in atomic and molecular physics. • Here there is no classically prohibited region between wells. • The ground probability is peaked at the position of classical unstable equilibrium in this models.
Diestler, D J; Jia, D; Manz, J; Yang, Y
2018-03-01
The theory of concerted electronic and nuclear flux densities associated with the vibration and dissociation of a multielectron nonrotating homonuclear diatomic molecule (or ion) in an electronic state 2S+1 Σ g,u + (JM = 00) is presented. The electronic population density, nuclear probability density, and nuclear flux density are isotropic. A theorem of Barth , presented in this issue, shows that the electronic flux density (EFD) is also isotropic. Hence, the evolving system appears as a pulsating, or exploding, "quantum bubble". Application of the theory to Na 2 vibrating in the double-minimum potential of the 2 1 Σ u + (JM = 00) excited state reveals that the EFD consists of two antagonistic components. One arises from electrons that flow essentially coherently with the nuclei. The other, which is oppositely directed (i.e., antagonistic) and more intense, is due to the transition in electronic structure from "Rydberg" to "ionic" type as the nuclei traverse the potential barrier between inner and outer potential wells. This "transition" component of the EFD rises and falls sharply as the nuclei cross the barrier.
International Nuclear Information System (INIS)
Horing, Norman J Morgenstern; Popov, Vyacheslav V
2006-01-01
Recent experimental observations by X.G. Peralta and S.J. Allen, et al. of dc photoconductivity resonances in steady source-drain current subject to terahertz radiation in a grid-gated double-quantum well FET suggested an association with plasmon resonances. This association was definitively confirmed for some parameter ranges in our detailed electrodynamic absorbance calculations. In this paper we propose that the reason that the dc photoconductance resonances match the plasmon resonances in semiconductors is based on a nonlinear dynamic screening mechanism. In this, we employ a shielded potential approximation that is nonlinear in the terahertz field to determine the nonequilibrium Green's function and associated density perturbation that govern the nonequilibrium dielectric polarization of the medium. This 'conditioning' of the system by the incident THz radiation results in resonant polarization response at the plasmon frequencies which, in turn, causes a sharp drop of the resistive shielded impurity scattering potentials and attendant increase of the dc source-drain current. This amounts to disabling the impurity scattering mechanism by plasmon resonant behavior in nonlinear screening
Quantum-Well Thermophotovoltaic Cells
Freudlich, Alex; Ignatiev, Alex
2009-01-01
Thermophotovoltaic cells containing multiple quantum wells have been invented as improved means of conversion of thermal to electrical energy. The semiconductor bandgaps of the quantum wells can be tailored to be narrower than those of prior thermophotovoltaic cells, thereby enabling the cells to convert energy from longer-wavelength photons that dominate the infrared-rich spectra of typical thermal sources with which these cells would be used. Moreover, in comparison with a conventional single-junction thermophotovoltaic cell, a cell containing multiple narrow-bandgap quantum wells according to the invention can convert energy from a wider range of wavelengths. Hence, the invention increases the achievable thermal-to-electrical energy-conversion efficiency. These thermophotovoltaic cells are expected to be especially useful for extracting electrical energy from combustion, waste-heat, and nuclear sources having temperatures in the approximate range from 1,000 to 1,500 C.
Energy Technology Data Exchange (ETDEWEB)
Rodríguez-Magdaleno, K.A.; Martínez-Orozco, J.C.; Rodríguez-Vargas, I. [Unidad Académica de Física, Universidad Autónoma de Zacatecas, Calz. Solidaridad Esq. Paseo a La Bufa S/N. C.P. 98060 Zacatecas (Mexico); Mora-Ramos, M.E. [Facultad de Ciencias, Universidad Autónoma del Estado de Morelos, Av. Universidad 1001, CP 62209 Cuernavaca, Morelos (Mexico); Física Teórica y Aplicada, Escuela de Ingeniería de Antioquia, AA 7516 Medellín (Colombia); Grupo de Materia Condensada-UdeA, Instituto de Física, Facultad de Ciencias Exactas y Naturales, Universidad de Antioquia UdeA, Calle 70 No. 52-21, Medellín (Colombia); Duque, C.A., E-mail: cduque@fisica.udea.edu.co [Grupo de Materia Condensada-UdeA, Instituto de Física, Facultad de Ciencias Exactas y Naturales, Universidad de Antioquia UdeA, Calle 70 No. 52-21, Medellín (Colombia)
2014-03-15
In this work, the conduction band electron states and the associated intersubband-related linear and nonlinear optical absorption coefficient and relative refractive index change are calculated for an asymmetric double n-type δ-doped quantum well in a GaAs-matrix. The effects of an external applied static electric field are included. Values of the two-dimensional impurities density (N{sub 2d}) of each single δ-doped quantum well are taken to vary within the range of 1.0×10{sup 12} to 7.0×10{sup 12} cm{sup −2}, consistent with the experimental data growth regime. The optical responses are reported as a function of the δ-doped impurities density and the applied electric field. It is shown that single electron states and the related optical quantities are significantly affected by the structural asymmetry of the double δ-doped quantum well system. In addition, a brief comparison with the free-carrier-related optical response is presented. -- Highlights: • Nonlinear optics in asymmetric double n-type δ-doped quantum well in a GaAs-matrix. • The system is considered under external applied electric field in growth direction. • The 2D impurity density is consistent with the experimental data growth regime. • The optical quantities are significantly affected by the structural asymmetry of the system.
International Nuclear Information System (INIS)
Rodríguez-Magdaleno, K.A.; Martínez-Orozco, J.C.; Rodríguez-Vargas, I.; Mora-Ramos, M.E.; Duque, C.A.
2014-01-01
In this work, the conduction band electron states and the associated intersubband-related linear and nonlinear optical absorption coefficient and relative refractive index change are calculated for an asymmetric double n-type δ-doped quantum well in a GaAs-matrix. The effects of an external applied static electric field are included. Values of the two-dimensional impurities density (N 2d ) of each single δ-doped quantum well are taken to vary within the range of 1.0×10 12 to 7.0×10 12 cm −2 , consistent with the experimental data growth regime. The optical responses are reported as a function of the δ-doped impurities density and the applied electric field. It is shown that single electron states and the related optical quantities are significantly affected by the structural asymmetry of the double δ-doped quantum well system. In addition, a brief comparison with the free-carrier-related optical response is presented. -- Highlights: • Nonlinear optics in asymmetric double n-type δ-doped quantum well in a GaAs-matrix. • The system is considered under external applied electric field in growth direction. • The 2D impurity density is consistent with the experimental data growth regime. • The optical quantities are significantly affected by the structural asymmetry of the system
International Nuclear Information System (INIS)
Karabulut, I.; Mora-Ramos, M.E.; Duque, C.A.
2011-01-01
The intersubband electron-related nonlinear optical absorption and nonlinear optical rectification in GaAs-Ga 1-x Al x As asymmetric double quantum wells are studied, under the influence of combined or independent applied electric and magnetic fields as well as hydrostatic pressure. The outcome of the density matrix formalism and the effective mass, and parabolic-band approximations have been considered as main theoretical tools for the description. It is obtained that under particular geometrical conditions, with or without electric and/or magnetic field strength, the optical rectification is null and, simultaneously, in such circumstances the optical absorption has a relative maximum. It is also detected that the influence of the hydrostatic pressure leads to increasing or decreasing behaviors of the nonlinear optical absorption in dependence of the particular regime of pressure values considered, with significant distinction of the cases of opposite electric field orientations. - Highlights: → Maxima of the NOA correspond to zero in the NOR. → Electric fields can couple the double quantum wells. → Hydrostatic pressure can couple the double quantum wells. → NOA can increase/decrease with hydrostatic pressure. → Overlap between wave functions depends on the magnetic field.
Silicon Germanium Quantum Well Thermoelectrics
Davidson, Anthony Lee, III
Today's growing energy demands require new technologies to provide high efficiency clean energy. Thermoelectrics that convert heat to electrical energy directly can provide a method for the automobile industry to recover waste heat to power vehicle electronics, hence improving fuel economy. If large enough efficiencies can be obtained then the internal combustion engine could even be replaced. Exhaust temperature for automotive application range from 400 to 800 K. In this temperature range the current state of the art materials are bulk Si1-xGex alloys. By alternating layers of Si and Si1-xGex alloy device performance may be enhanced through quantum well effects and variations in material thermal properties. In this study, superlattices designed for in-plane operation with varying period and crystallinity are examined to determine the effect on electrical and thermal properties. In-plane electrical resistivity of these materials was found to be below the bulk material at a similar doping at room temperature, confirming the role of quantum wells in electron transport. As period is reduced in the structures boundary scattering limits electron propagation leading to increased resistivity. The Seebeck coefficient measured at room temperature is higher than the bulk material, additionally lending proof to the effects of quantum wells. When examining cross-plane operation the low doping in the Si layers of the device produce high resistivity resulting from boundary scattering. Thermal conductivity was measured from 77 K up to 674 K and shows little variation due to periodicity and temperature, however an order of magnitude reduction over bulk Si1-xGex is shown in all samples. A model is developed that suggests a combination of phonon dispersion effects and strong boundary scattering. Further study of the phonon dispersion effects was achieved through the examination of the heat capacity by combining thermal diffusivity with thermal conductivity. All superlattices show a
Energy Technology Data Exchange (ETDEWEB)
Mora-Ramos, M.E. [Facultad de Ciencias, Universidad Autonoma del Estado de Morelos, Ave. Universidad 1001, CP 62209, Cuernavaca, Morelos, Mexico (Mexico); Instituto de Fisica, Universidad de Antioquia, AA 1226 Medellin (Colombia); Duque, C.A., E-mail: cduque_echeverri@yahoo.es [Instituto de Fisica, Universidad de Antioquia, AA 1226 Medellin (Colombia); Kasapoglu, E.; Sari, H. [Cumhuriyet University, Physics Department, 58140 Sivas (Turkey); Soekmen, I. [Dokuz Eyluel University, Physics Department, 35160 Buca, Izmir (Turkey)
2013-03-15
The combined effects of intense laser radiation and applied electric fields on the intersubband-related linear and nonlinear optical properties in GaAs-based quantum wells are discussed. It is shown that for asymmetric double quantum well, the increasing laser field intensity causes progressive redshifts in the peak positions of the second and third harmonic coefficients. However, the resonant peaks of the nonlinear optical rectification can suffer a blueshift or a redshift, depending on the laser strengths. The same feature appears in the case of the resonant peaks corresponding to the total coefficients of optical absorption and relative change in the refractive index. - Highlights: Black-Right-Pointing-Pointer Nonlinear optical properties in double quantum wells. Black-Right-Pointing-Pointer Increasing laser field intensity causes redshifts in the peak positions. Black-Right-Pointing-Pointer Resonant peak of second order nonlinearities can be blue-shifted. Black-Right-Pointing-Pointer Relative change in refractive index depends of the applied electric field. Black-Right-Pointing-Pointer The energy position depends of the laser field parameter.
Double-well potential in annular Josephson junction
International Nuclear Information System (INIS)
Shaju, P.D.; Kuriakose, V.C.
2004-01-01
A double-well potential suitable for quantum-coherent vortex tunnelling can be created in an annular Josephson junction by inserting a microshort in the junction and by applying an in-plane dc magnetic field. Analysis shows that the intensity of the magnetic field determines the depth of the potential well and the strength of the microshort controls the potential barrier height while a dc bias across the junction tilts the potential well. At milli-Kelvin temperatures, the system is expected to behave as a quantum two-level system and may be useful in designing vortex qubits
Double-partition Quantum Cluster Algebras
DEFF Research Database (Denmark)
Jakobsen, Hans Plesner; Zhang, Hechun
2012-01-01
A family of quantum cluster algebras is introduced and studied. In general, these algebras are new, but sub-classes have been studied previously by other authors. The algebras are indexed by double parti- tions or double flag varieties. Equivalently, they are indexed by broken lines L. By grouping...... together neighboring mutations into quantum line mutations we can mutate from the cluster algebra of one broken line to another. Compatible pairs can be written down. The algebras are equal to their upper cluster algebras. The variables of the quantum seeds are given by elements of the dual canonical basis....
International Nuclear Information System (INIS)
Menon, P.S.; Kandiah, K.; Burhanuddin Yeop Majlis; Shaari, S.
2011-01-01
Long-wavelength vertical-cavity surface-emitting lasers (LW-VCSELs) have profound advantages compared to traditional edge-emitting lasers offering improved properties with respect to mode selectivity, fibre coupling, threshold currents and integration into 2D arrays or with other electronic devices. Its commercialization is gaining momentum as the local and access network in optical communication system expand. Numerical modeling of LW-VCSEL utilizing wafer-fused InP-based multi-quantum wells (MQW) and GaAs-based distributed Bragg reflectors (DBRs) is presented in this paper. Emphasis is on the device and mesa/pillar diameter design parameter comparison and its effect on the device characteristics. (author)
WKB corrections to the energy splitting in double-well potentials
Robnik, Marko; Salasnich, Luca
1997-01-01
By using the WKB quantization we deduce an analytical formula for the energy splitting in a double-well potential which is the usual Landau formula with additional quantum corrections. Then we analyze the accuracy of our formula for the double square well potential and the parabolic double-well potential.
Energy Technology Data Exchange (ETDEWEB)
Odhiambo Oyoko, H. [Department of Physics, Westville Campus, University of KwaZulu-Natal, Private Bag X 54001, Durban 4000 (South Africa); Porras-Montenegro, N. [Departamento de Fisica, Universidad del Valle, AA 25360, Cali (Colombia); Lopez, S.Y. [Facultad de Educacion, Universidad de Antioquia, AA 1226, Medellin (Colombia); Duque, C.A. [Instituto de Fisica, Universidad de Antioquia, AA 1226, Medellin (Colombia)
2007-07-01
Using a variational technique within the effective mass approximation we have carried out a comparative study of the effect of hydrostatic pressure and temperature on the shallow-impurity related optical absorption spectra in GaAs-Ga{sub 1-x}Al{sub x}As single and double quantum wells. The results show a pressure dependent read-shift and a temperature dependent blue-shift in the optical absorption spectra. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)
Energy Technology Data Exchange (ETDEWEB)
Miranda, Guillermo L. [Fisica Teorica y Aplicada, Escuela de Ingenieria de Antioquia, A.A. 7516, Medellin (Colombia); Mora-Ramos, M.E. [Facultad de Ciencias, Universidad Autonoma del Estado de Morelos, Av. Universidad 1001, C.P. 62209, Cuernavaca, Morelos (Mexico); Duque, C.A., E-mail: cduque_echeverri@yahoo.es [Instituto de Fisica, Universidad de Antioquia, AA 1226, Medellin (Colombia)
2012-10-15
The dependencies of the binding energies of the lowest four 1s-like exciton states in GaAs-(Ga,Al)As coupled double quantum wells (CDQW) on the geometric parameters of the system are theoretically studied. A variational approach, together with the parabolic band and effective mass approximations, were considered in order to perform the numerical calculations. It is shown that in the case of a symmetric system there is a degeneracy between the heavy-hole even and odd states and this degeneracy can be removed by the presence of a sufficiently narrow middle barrier. In contrast to this fact, the electron even and odd states are never degenerated. It is detected that, if the system is asymmetric, there will appear binding energies anticrossings between the heavy-hole states at the point of the asymmetric {yields} symmetric QW transition. - Highlights: Black-Right-Pointing-Pointer Study of 1s-like exciton states in double quantum wells. Black-Right-Pointing-Pointer Binding energy decreases with the presence of second well. Black-Right-Pointing-Pointer Binding energy of (2,2) state can be larger than (1,1) state. Black-Right-Pointing-Pointer Central barrier can remove degeneracy of states. Black-Right-Pointing-Pointer Anticrossing between states can be induced via symmetries.
International Nuclear Information System (INIS)
Masiello, David J.; Reinhardt, William P.
2007-01-01
A time-dependent multiconfigurational self-consistent field theory is presented to describe the many-body dynamics of a gas of identical bosonic atoms confined to an external trapping potential at zero temperature from first principles. A set of generalized evolution equations are developed, through the time-dependent variational principle, which account for the complete and self-consistent coupling between the expansion coefficients of each configuration and the underlying one-body wave functions within a restricted two state Fock space basis that includes the full effects of the condensate's mean field as well as atomic correlation. The resulting dynamical equations are a classical Hamiltonian system and, by construction, form a well-defined initial value problem. They are implemented in an efficient numerical algorithm. An example is presented, highlighting the generality of the theory, in which the ballistic expansion of a fragmented condensate ground state is compared to that of a macroscopic quantum superposition state, taken here to be a highly entangled number state, upon releasing the external trapping potential. Strikingly different many-body matter-wave dynamics emerge in each case, accentuating the role of both atomic correlation and mean-field effects in the two condensate states
Energy Technology Data Exchange (ETDEWEB)
Dakhlaoui, Hassen [Department of Physics, College of Science for Girls, University of Dammam (UOD), Saudi Arabia and Department of Physics, Faculty of Sciences of Bizerte, University of Carthage (Tunisia)
2015-04-07
In the present paper, the linear and nonlinear optical absorption coefficients and refractive index changes between the ground and the first excited states in double GaN/Al{sub x}Ga{sub (1−x)}N quantum wells are studied theoretically. The electronic energy levels and their corresponding wave functions are obtained by solving Schrödinger-Poisson equations self-consistently within the effective mass approximation. The obtained results show that the optical absorption coefficients and refractive index changes can be red- and blue-shifted through varying the left quantum well width and the aluminum concentration x{sub b2} of the central barrier, respectively. These structural parameters are found to present optimum values for carrying out the transition of 0.8 eV (1.55 μm). Furthermore, we show that the desired transition can also be achieved by replacing the GaN in the left quantum well with Al{sub y}Ga{sub (1−y)}N and by varying the aluminum concentration y{sub Al}. The obtained results give a new degree of freedom in optoelectronic device applications such as optical fiber telecommunications operating at (1.55 μm)
Spin Splitting in Different Semiconductor Quantum Wells
International Nuclear Information System (INIS)
Hao Yafei
2012-01-01
We theoretically investigate the spin splitting in four undoped asymmetric quantum wells in the absence of external electric field and magnetic field. The quantum well geometry dependence of spin splitting is studied with the Rashba and the Dresselhaus spin-orbit coupling included. The results show that the structure of quantum well plays an important role in spin splitting. The Rashba and the Dresselhaus spin splitting in four asymmetric quantum wells are quite different. The origin of the distinction is discussed in this work. (condensed matter: electronic structure, electrical, magnetic, and optical properties)
Hydrogenic impurity in double quantum dots
International Nuclear Information System (INIS)
Wang, X.F.
2007-01-01
The ground state binding energy and the average interparticle distances for a hydrogenic impurity in double quantum dots with Gaussian confinement potential are studied by the variational method. The probability density of the electron is calculated, too. The dependence of the binding energy on the impurity position is investigated for GaAs quantum dots. The result shows that the binding energy has a minimum as a function of the distance between the two quantum dots when the impurity is located at the center of one quantum dot or at the center of the edge of one quantum dot. When the impurity is located at the center of the two dots, the binding energy decreases monotonically
Double-pass quantum volume hologram
International Nuclear Information System (INIS)
Vasilyev, Denis V.; Sokolov, Ivan V.
2011-01-01
We propose a scheme for parallel, spatially multimode quantum memory for light. The scheme is based on the propagation in different directions of a quantum signal wave and strong classical reference wave, like in a classical volume hologram and the previously proposed quantum volume hologram [D. V. Vasilyev et al., Phys. Rev. A 81, 020302(R) (2010)]. The medium for the hologram consists of a spatially extended ensemble of cold spin-polarized atoms. In the absence of the collective spin rotation during the interaction, two passes of light for both storage and retrieval are required, and therefore the present scheme can be called a double-pass quantum volume hologram. The scheme is less sensitive to diffraction and therefore is capable of achieving a higher density of storage of spatial modes as compared to the previously proposed thin quantum hologram [D. V. Vasilyev et al., Phys. Rev. A 77, 020302(R) (2008)], which also requires two passes of light for both storage and retrieval. However, the present scheme allows one to achieve a good memory performance with a lower optical depth of the atomic sample as compared to the quantum volume hologram. A quantum hologram capable of storing entangled images can become an important ingredient in quantum information processing and quantum imaging.
Bound states in continuum: Quantum dots in a quantum well
Energy Technology Data Exchange (ETDEWEB)
Prodanović, Nikola, E-mail: elnpr@leeds.ac.uk [Institute of Microwaves and Photonics, School of Electronic and Electrical Engineering, University of Leeds, Woodhouse Lane, Leeds LS2 9JT (United Kingdom); Milanović, Vitomir [School of Electrical Engineering, University of Belgrade, Bulevar Kralja Aleksandra 73, 11000 Belgrade (Serbia); Ikonić, Zoran; Indjin, Dragan; Harrison, Paul [Institute of Microwaves and Photonics, School of Electronic and Electrical Engineering, University of Leeds, Woodhouse Lane, Leeds LS2 9JT (United Kingdom)
2013-11-01
We report on the existence of a bound state in the continuum (BIC) of quantum rods (QR). QRs are novel elongated InGaAs quantum dot nanostructures embedded in the shallower InGaAs quantum well. BIC appears as an excited confined dot state and energetically above the bottom of a well subband continuum. We prove that high height-to-diameter QR aspect ratio and the presence of a quantum well are indispensable conditions for accommodating the BIC. QRs are unique semiconductor nanostructures, exhibiting this mathematical curiosity predicted 83 years ago by Wigner and von Neumann.
New instantons in the double well potential
Vandoren, S.; Nieuwenhuizen, P. van
2000-01-01
A new solution of the Euclidean equations of motion is found for the quantummechanical double-well potential with a four-fermion term. It extends the usual kinkinstanton solution in which both the kink field and the fermionic fields contain a finite number of new terms which are polynomial in the
Motion in an Asymmetric Double Well
Brizard, Alain J.; Westland, Melissa C.
2016-01-01
The problem of the motion of a particle in an asymmetric double well is solved explicitly in terms of the Weierstrass and Jacobi elliptic functions. While the solution of the orbital motion is expressed simply in terms of the Weierstrass elliptic function, the period of oscillation is more directly expressed in terms of periods of the Jacobi elliptic functions.
Wave-packet dynamics in quantum wells
DEFF Research Database (Denmark)
Kuznetsov, A. V.; Sanders, G. D.; Stanton, C. J.
1995-01-01
It has been recently recognized that in bulk semiconductors the displacement current caused by ultrafast optical generation of ''polarized pairs'' in the applied de field is an important mechanism of charge transport in addition to the usual transport current. In quantum-well systems, this polari......It has been recently recognized that in bulk semiconductors the displacement current caused by ultrafast optical generation of ''polarized pairs'' in the applied de field is an important mechanism of charge transport in addition to the usual transport current. In quantum-well systems...... that the carriers in a quantum well can behave as an ensemble of classical particles and produce a transport like photocurrent....
Andreev molecules in semiconductor nanowire double quantum dots.
Su, Zhaoen; Tacla, Alexandre B; Hocevar, Moïra; Car, Diana; Plissard, Sébastien R; Bakkers, Erik P A M; Daley, Andrew J; Pekker, David; Frolov, Sergey M
2017-09-19
Chains of quantum dots coupled to superconductors are promising for the realization of the Kitaev model of a topological superconductor. While individual superconducting quantum dots have been explored, control of longer chains requires understanding of interdot coupling. Here, double quantum dots are defined by gate voltages in indium antimonide nanowires. High transparency superconducting niobium titanium nitride contacts are made to each of the dots in order to induce superconductivity, as well as probe electron transport. Andreev bound states induced on each of dots hybridize to define Andreev molecular states. The evolution of these states is studied as a function of charge parity on the dots, and in magnetic field. The experiments are found in agreement with a numerical model.Quantum dots in a nanowire are one possible approach to creating a solid-state quantum simulator. Here, the authors demonstrate the coupling of electronic states in a double quantum dot to form Andreev molecule states; a potential building block for longer chains suitable for quantum simulation.
Silicon Germanium Quantum Well Solar Cell
National Aeronautics and Space Administration — A single crystal SiGe has enormous potentials for high performance chips and solar cells. This project seeks to fabricate a rudimentary but 1st cut quantum-well...
Double quantum dot as a minimal thermoelectric generator
Donsa, S.; Andergassen, S.; Held, K.
2014-01-01
Based on numerical renormalization group calculations, we demonstrate that experimentally realized double quantum dots constitute a minimal thermoelectric generator. In the Kondo regime, one quantum dot acts as an n-type and the other one as a p-type thermoelectric device. Properly connected the double quantum dot provides a miniature power supply utilizing the thermal energy of the environment.
Quantum wells and the generalized uncertainty principle
International Nuclear Information System (INIS)
Blado, Gardo; Owens, Constance; Meyers, Vincent
2014-01-01
The finite and infinite square wells are potentials typically discussed in undergraduate quantum mechanics courses. In this paper, we discuss these potentials in the light of the recent studies of the modification of the Heisenberg uncertainty principle into a generalized uncertainty principle (GUP) as a consequence of attempts to formulate a quantum theory of gravity. The fundamental concepts of the minimal length scale and the GUP are discussed and the modified energy eigenvalues and transmission coefficient are derived. (paper)
Quantum Well Infrared Photodetectors Physics and Applications
Schneider, Harald
2007-01-01
Addressed to both students as a learning text and scientists/engineers as a reference, this book discusses the physics and applications of quantum-well infrared photodetectors (QWIPs). It is assumed that the reader has a basic background in quantum mechanics, solid-state physics, and semiconductor devices. To make this book as widely accessible as possible, the treatment and presentation of the materials is simple and straightforward. The topics for the book were chosen by the following criteria: they must be well-established and understood; and they should have been, or potentially will be, used in practical applications. The monograph discusses most aspects relevant for the field but omits, at the same time, detailed discussions of specialized topics such as the valence-band quantum wells.
Transfer of a wave packet in double-well potential
Yang, Hai-Feng; Hu, Yao-Hua; Tan, Yong-Gang
2018-04-01
Energy potentials with double-well structures are typical in atoms and molecules systems. A manipulation scheme using Half Cycles Pulses (HCPs) is proposed to transfer a Gaussian wave packet between the two wells. On the basis of quantum mechanical simulations, the time evolution and the energy distribution of the wave packet are evaluated. The effect of time parameters, amplitude, and number of HCPs on spatial and energy distribution of the final state and transfer efficiency are investigated. After a carefully tailored HCPs sequence is applied to the initial wave packet localized in one well, the final state is a wave packet localized in the other well and populated at the lower energy levels with narrower distribution. The present scheme could be used to control molecular reactions and to prepare atoms with large dipole moments.
DEFF Research Database (Denmark)
Timofeev, V.B.; Larionov, A.V.; Ioselevich, A.S.
1999-01-01
The interwell luminescence (PL) of spatially separated e-h pairs exhibits systematic narrowing with temperature increase which are explained in terms of lateral thermo-activated tunneling of e-h pairs localized by random potential fluctuations (RPF). At critical temperatures the quasi-equilibrium......The interwell luminescence (PL) of spatially separated e-h pairs exhibits systematic narrowing with temperature increase which are explained in terms of lateral thermo-activated tunneling of e-h pairs localized by random potential fluctuations (RPF). At critical temperatures the quasi......-equilibrium of carriers, undergoes an abrupt transition. This occurs with significant redistribution of the electrical field inside the structure and give rise to a low frequency noice appearing in the luminescence. Below critical temperature the new steady state results in the accumulation of 2DEG in one of the well....
Understanding the Double Quantum Muonium RF Resonance
Kreitzman, S. R.; Cottrell, S. P.; Fleming, D. G.; Sun-Mack, S.
A physically intuitive analytical solution to the Mu + RF Hamiltonian and lineshape is developed. The method is based on reformulating the problem in a basis set that explicitly accounts for the 1q RF transitions and identifying an isolated upper 1q quasi-eigenstate within that basis. Subsequently the double quantum resonance explicitly manifests itself via the non-zero interaction term between the pair of lower ortho-normalized 1q basis states, which in this field region are substantially the | \\uparrow \\uparrow > and | \\downarrow \\downarrow > Mu states.
Intermixing effects on emission properties of InGaN/GaN coupled Quantum wells
Susilo, Tri B.; Alsunaidi, M. A.; Shen, Chao; Ooi, Boon S.
2015-01-01
Intermixing processes in quantum wells have been extensively studied in order to modify characteristic of semiconductor devices such as LEDs. Controlling the band gap of material by introducing intermixing process can be used to enable broadband and controllable emission of LEDs. Quantum well intermixing (QWI) in InGaN/GaN double quantum well (DQW) is discussed in this paper. By varying the interdiffusion and separation lengths, the effects of intermixing process on the quantum eigen energies of the wells are studied. The investigation is carried out using a homegrown Quantum-FDTD simulator. © 2015 IEEE.
Intermixing effects on emission properties of InGaN/GaN coupled Quantum wells
Susilo, Tri B.
2015-02-01
Intermixing processes in quantum wells have been extensively studied in order to modify characteristic of semiconductor devices such as LEDs. Controlling the band gap of material by introducing intermixing process can be used to enable broadband and controllable emission of LEDs. Quantum well intermixing (QWI) in InGaN/GaN double quantum well (DQW) is discussed in this paper. By varying the interdiffusion and separation lengths, the effects of intermixing process on the quantum eigen energies of the wells are studied. The investigation is carried out using a homegrown Quantum-FDTD simulator. © 2015 IEEE.
Spectroscopy of GaAs quantum wells
International Nuclear Information System (INIS)
West, L.C.
1985-07-01
A new type of optical dipole transition in GaAs quantum wells has been observed. The dipole occurs between two envelope states of the conduction band electron wavefunction, and is called a quantum well envelope state transition (QWEST). The QWEST is observed by infrared absorption in three different samples with quantum well thicknesses 65, 82, and 92 A and resonant energies of 152, 121, and 108 MeV, respectively. The oscillator strength is found to have values of over 12, in good agreement with prediction. The linewidths are seen as narrow as 10 MeV at room temperature and 7 MeV at low temperature, thus proving a narrow line resonance can indeed occur between transitions of free electrons. Techniques for the proper growth of these quantum well samples to enable observation of the QWEST have also been found using (AlGa)As compounds. This QWEST is considered to be an ideal material for an all optical digital computer. The QWEST can be made frequency matched to the inexpensive Carbon Dioxide laser with an infrared wavelength of 10 microns. The nonlinearity and fast relaxation time of the QWEST indicate a logic element with a subpicosecond switch time can be built in the near future, with a power level which will eventually be limited only by the noise from a lack of quanta to above approximately 10 microwatts. 64 refs., 35 figs., 6 tabs
Spectroscopy of GaAs quantum wells
Energy Technology Data Exchange (ETDEWEB)
West, L.C.
1985-07-01
A new type of optical dipole transition in GaAs quantum wells has been observed. The dipole occurs between two envelope states of the conduction band electron wavefunction, and is called a quantum well envelope state transition (QWEST). The QWEST is observed by infrared absorption in three different samples with quantum well thicknesses 65, 82, and 92 A and resonant energies of 152, 121, and 108 MeV, respectively. The oscillator strength is found to have values of over 12, in good agreement with prediction. The linewidths are seen as narrow as 10 MeV at room temperature and 7 MeV at low temperature, thus proving a narrow line resonance can indeed occur between transitions of free electrons. Techniques for the proper growth of these quantum well samples to enable observation of the QWEST have also been found using (AlGa)As compounds. This QWEST is considered to be an ideal material for an all optical digital computer. The QWEST can be made frequency matched to the inexpensive Carbon Dioxide laser with an infrared wavelength of 10 microns. The nonlinearity and fast relaxation time of the QWEST indicate a logic element with a subpicosecond switch time can be built in the near future, with a power level which will eventually be limited only by the noise from a lack of quanta to above approximately 10 microwatts. 64 refs., 35 figs., 6 tabs.
Mixed biexcitons in single quantum wells
DEFF Research Database (Denmark)
Wagner, Hans Peter; Langbein, Wolfgang Werner; Hvam, Jørn Märcher
1999-01-01
Biexcitonic complexes in a ZnSe single quantum well are investigated by spectrally resolved four-wave mixing (FWM). The formation of heavy-heavy-hole XXh and of mixed heavy-light-hole XXm biexcitons showing binding energies of Delta(h) = 4.8 meV and Delta(m)= 2.8 meV is identified by polarization...
Quantum wells for optical information processing
International Nuclear Information System (INIS)
Miller, D.A.B.
1989-01-01
Quantum wells, alternate thin layers of two different semiconductor materials, show an exceptional electric field dependence of the optical absorption, called the quantum-confined Stark effect (QCSE), for electric fields perpendicular to the layers. This enables electrically controlled optical modulators and optically controlled self-electro-optic-effect devices that can operate at high speed and low energy density. Recent developments in these QCSE devices are summarized, including new device materials and novel device structures. The variety of sophisticated devices now demonstrated is promising for applications to information processing
Piezoelectric effect in strained quantum wells
International Nuclear Information System (INIS)
Dang, L.S.; Andre, R.; Cibert, J.
1995-01-01
This paper describes some physical aspects of the piezoelectric effect which takes place in strained semiconductor heterostructures grown along a polar axis. First we show how piezoelectric fields can be accurately measured by optical spectroscopy. Then we discuss about the origin of the non-linear piezoelectric effect reported recently for CdTe, and maybe for InAs as well. Finally we compare excitonic effects in piezoelectric and non-piezoelectric quantum wells. (orig.)
Characterization of interfaces in semimagnetic quantum wells
International Nuclear Information System (INIS)
Schmitt, G.; Kuhn-Heinrich, B.; Zehnder, U.; Ossau, W.; Litz, T.; Waag, A.; Landwehr, G.
1995-01-01
The interfaces between nonmagnetic CdTe quantum wells and semimagnetic barriers of Cd 1-x Mn x Te were investigated for several well widths by low temperature photoluminescence and photoluminescence excitation spectroscopy. Specially designed Cd 1-x Mn x /CdTe/Cd 1-y Mg y Te structures enable us to distinguish the quality of semimagnetic normal and inverted interfaces. The normal interface shows to better structural quality than the inverted interface. (author)
Strained quantum well photovoltaic energy converter
Freundlich, Alexandre (Inventor); Renaud, Philippe (Inventor); Vilela, Mauro Francisco (Inventor); Bensaoula, Abdelhak (Inventor)
1998-01-01
An indium phosphide photovoltaic cell is provided where one or more quantum wells are introduced between the conventional p-conductivity and n-conductivity indium phosphide layer. The approach allows the cell to convert the light over a wider range of wavelengths than a conventional single junction cell and in particular convert efficiently transparency losses of the indium phosphide conventional cell. The approach hence may be used to increase the cell current output. A method of fabrication of photovoltaic devices is provided where ternary InAsP and InGaAs alloys are used as well material in the quantum well region and results in an increase of the cell current output.
Fractional Quantum Hall States in a Ge Quantum Well.
Mironov, O A; d'Ambrumenil, N; Dobbie, A; Leadley, D R; Suslov, A V; Green, E
2016-04-29
Measurements of the Hall and dissipative conductivity of a strained Ge quantum well on a SiGe/(001)Si substrate in the quantum Hall regime are reported. We analyze the results in terms of thermally activated quantum tunneling of carriers from one internal edge state to another across saddle points in the long-range impurity potential. This shows that the gaps for different filling fractions closely follow the dependence predicted by theory. We also find that the estimates of the separation of the edge states at the saddle are in line with the expectations of an electrostatic model in the lowest spin-polarized Landau level (LL), but not in the spin-reversed LL where the density of quasiparticle states is not high enough to accommodate the carriers required.
Parallel magnetotransport in multiple quantum well structures
International Nuclear Information System (INIS)
Sheregii, E.M.; Ploch, D.; Marchewka, M.; Tomaka, G.; Kolek, A.; Stadler, A.; Mleczko, K.; Strupinski, W.; Jasik, A.; Jakiela, R.
2004-01-01
The results of investigations of parallel magnetotransport in AlGaAs/GaAs and InGaAs/InAlAs/InP multiple quantum wells structures (MQW's) are presented in this paper. The MQW's were obtained by metalorganic vapour phase epitaxy with different shapes of QW, numbers of QW and levels of doping. The magnetotransport measurements were performed in wide region of temperatures (0.5-300 K) and at high magnetic fields up to 30 T (B is perpendicular and current is parallel to the plane of the QW). Three types of observed effects are analyzed: quantum Hall effect and Shubnikov-de Haas oscillations at low temperatures (0.5-6 K) as well as magnetophonon resonance at higher temperatures (77-300 K)
Chalcopyrite semiconductors for quantum well solar cells
Energy Technology Data Exchange (ETDEWEB)
Afshar, Maziar; Sadewasser, Sascha; Albert, Juergen; Lehmann, Sebastian; Abou-Ras, Daniel; Lux-Steiner, Martha C. [Helmholtz-Zentrum Berlin fuer Materialien und Energie, Berlin (Germany); Marron, David Fuertes [Instituto de Energia Solar - ETSIT, Universidad Politecnica de Madrid, Ciudad Universitaria s.n., 28040 Madrid (Spain); Rockett, Angus A. [Department of Materials Science and Engineering, University of Illinois, 1304 W. Green Street, Urbana, IL 61801 (United States); Raesaenen, Esa [Nanoscience Center, Department of Physics University of Jyvaeskylae, FI-40014 Jyvaeskylae (Finland)
2011-11-15
The possibilities of using highly absorbing chalcopyrite semiconductors of the type Cu(In,Ga)Se{sub 2} in a quantum well solar cell structure are explored. Thin alternating layers of 50 nm CuInSe{sub 2} and CuGaSe{sub 2} were grown epitaxially on a GaAs(100) substrate. The optical properties of a resulting structure of three layers indicate charge carrier confinement in the low band gap CuInSe{sub 2} layer. By compositional analysis interdiffusion of In and Ga at the interfaces was found. The compositional profile was converted into a conduction-band diagram, for which the quantization of energy levels was numerically confirmed using the effective-mass approximation. The results provide a promising basis for the future development of chalcopyrite-type quantum well structures and their application, i.e. in quantum well solar cells. (Copyright copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)
Spatially indirect excitons in coupled quantum wells
Energy Technology Data Exchange (ETDEWEB)
Lai, Chih-Wei Eddy [Univ. of California, Berkeley, CA (United States)
2004-03-01
Microscopic quantum phenomena such as interference or phase coherence between different quantum states are rarely manifest in macroscopic systems due to a lack of significant correlation between different states. An exciton system is one candidate for observation of possible quantum collective effects. In the dilute limit, excitons in semiconductors behave as bosons and are expected to undergo Bose-Einstein condensation (BEC) at a temperature several orders of magnitude higher than for atomic BEC because of their light mass. Furthermore, well-developed modern semiconductor technologies offer flexible manipulations of an exciton system. Realization of BEC in solid-state systems can thus provide new opportunities for macroscopic quantum coherence research. In semiconductor coupled quantum wells (CQW) under across-well static electric field, excitons exist as separately confined electron-hole pairs. These spatially indirect excitons exhibit a radiative recombination time much longer than their thermal relaxation time a unique feature in direct band gap semiconductor based structures. Their mutual repulsive dipole interaction further stabilizes the exciton system at low temperature and screens in-plane disorder more effectively. All these features make indirect excitons in CQW a promising system to search for quantum collective effects. Properties of indirect excitons in CQW have been analyzed and investigated extensively. The experimental results based on time-integrated or time-resolved spatially-resolved photoluminescence (PL) spectroscopy and imaging are reported in two categories. (i) Generic indirect exciton systems: general properties of indirect excitons such as the dependence of exciton energy and lifetime on electric fields and densities were examined. (ii) Quasi-two-dimensional confined exciton systems: highly statistically degenerate exciton systems containing more than tens of thousands of excitons within areas as small as (10 micrometer)^{2} were
Discrete quantum Fourier transform in coupled semiconductor double quantum dot molecules
International Nuclear Information System (INIS)
Dong Ping; Yang Ming; Cao Zhuoliang
2008-01-01
In this Letter, we present a physical scheme for implementing the discrete quantum Fourier transform in a coupled semiconductor double quantum dot system. The main controlled-R gate operation can be decomposed into many simple and feasible unitary transformations. The current scheme would be a useful step towards the realization of complex quantum algorithms in the quantum dot system
Physics of strained quantum well lasers
Loehr, John P
1998-01-01
When this publisher offered me the opportunity to \\\\Tite a book, some six years ago, I did not hesitate to say yes. I had just spent the last four years of graduate school struggling to understand the physics of strained quantum well lasers, and it seemed to me the whole experience was much more difficult that it should have been. For although many of the results I needed were easy to locate, the underlying physical premises and intervening steps were not. If only I had a book providing the derivations, I could have absorbed them and gone on my way. Such a book lies before you. It provides a unified and self-contained descrip tion of the essential physics of strained quantum well lasers, starting from first principles whenever feasible. The presentation I have chosen requires only the standard introductory background in quantum mechanics, solid state physics, and electromagnetics expected of entering graduate students in physics or elec trical engineering. A single undergraduate course in each of these su...
Characterization of interfaces in semimagnetic quantum wells
Energy Technology Data Exchange (ETDEWEB)
Schmitt, G.; Kuhn-Heinrich, B.; Zehnder, U.; Ossau, W.; Litz, T.; Waag, A.; Landwehr, G. [Physikalishes Institut der Universitaet Wuerzburg am Hubland, Wuerzburg (Germany)
1995-12-31
The interfaces between nonmagnetic CdTe quantum wells and semimagnetic barriers of Cd{sub 1-x}Mn{sub x}Te were investigated for several well widths by low temperature photoluminescence and photoluminescence excitation spectroscopy. Specially designed Cd{sub 1-x}Mn{sub x}/CdTe/Cd{sub 1-y} Mg{sub y}Te structures enable us to distinguish the quality of semimagnetic normal and inverted interfaces. The normal interface shows to better structural quality than the inverted interface. (author). 5 refs, 2 figs, 1 tab.
Diffusion thermopower of a serial double quantum dot
International Nuclear Information System (INIS)
Thierschmann, H; Henke, M; Knorr, J; Maier, L; Buhmann, H; Molenkamp, L W; Heyn, C; Hansen, W
2013-01-01
We have experimentally studied the diffusion thermopower of a serial double quantum dot, defined electrostatically in a GaAs/AlGaAs heterostructure. We present the thermopower stability diagram for a temperature difference ΔT = (20 ± 10) mK across the device and find a maximum thermovoltage signal of several μV in the vicinity of the triple points. Along a constant energy axis in this regime, the data show a characteristic pattern which is in agreement with Mott's relation and can be well understood within a model of sequential transport. (paper)
The Physics of Quantum Well Infrared Photodetectors
Choi, K K
1999-01-01
In the past, infrared imaging has been used exclusively for military applications. In fact, it can also be useful in a wide range of scientific and commercial applications. However, its wide spread use was impeded by the scarcity of the imaging systems and its high cost. Recently, there is an emerging infrared technology based on quantum well intersubband transition in III-V compound semiconductors. With the new technology, these impedances can be eliminated and a new era of infrared imaging is in sight. This book is designed to give a systematic description on the underlying physics of the ne
Electron Raman scattering in quantum well wires
International Nuclear Information System (INIS)
Zhao Xiangfu; Liu Cuihong
2007-01-01
Electron Raman scattering (ERS) is investigated in a semiconductor quantum well wire (QWW) of cylindrical geometry for T=0K and neglecting phonon-assisted transitions. The differential cross-section (DCS) involved in this process is calculated as a function of a scattering frequency and the cylindrical radius. Electron states are confined within a QWW. Single parabolic conduction and valence bands are assumed. The selection rules are studied. Singularities in the spectra are interpreted for various cylindrical radii. ERS discussed here can provide direct information about the electron band structure of the system
Fiore, A.; Rossetti, M.; Alloing, B.; Paranthoën, C.; Chen, J.X.; Geelhaar, L.; Riechert, H.
2004-01-01
We present a comparative study of carrier diffusion in semiconductor heterostructures with different dimensionality [InGaAs quantum wells (QWs), InAs quantum dots (QDs), and disordered InGaNAs QWs (DQWs)]. In order to evaluate the diffusion length in the active region of device structures, we
Deformed quantum double realization of the toric code and beyond
Padmanabhan, Pramod; Ibieta-Jimenez, Juan Pablo; Bernabe Ferreira, Miguel Jorge; Teotonio-Sobrinho, Paulo
2016-09-01
Quantum double models, such as the toric code, can be constructed from transfer matrices of lattice gauge theories with discrete gauge groups and parametrized by the center of the gauge group algebra and its dual. For general choices of these parameters the transfer matrix contains operators acting on links which can also be thought of as perturbations to the quantum double model driving it out of its topological phase and destroying the exact solvability of the quantum double model. We modify these transfer matrices with perturbations and extract exactly solvable models which remain in a quantum phase, thus nullifying the effect of the perturbation. The algebra of the modified vertex and plaquette operators now obey a deformed version of the quantum double algebra. The Abelian cases are shown to be in the quantum double phase whereas the non-Abelian phases are shown to be in a modified phase of the corresponding quantum double phase. These are illustrated with the groups Zn and S3. The quantum phases are determined by studying the excitations of these systems namely their fusion rules and the statistics. We then go further to construct a transfer matrix which contains the other Z2 phase namely the double semion phase. More generally for other discrete groups these transfer matrices contain the twisted quantum double models. These transfer matrices can be thought of as being obtained by introducing extra parameters into the transfer matrix of lattice gauge theories. These parameters are central elements belonging to the tensor products of the algebra and its dual and are associated to vertices and volumes of the three dimensional lattice. As in the case of the lattice gauge theories we construct the operators creating the excitations in this case and study their braiding and fusion properties.
Double Tunneling Injection Quantum Dot Lasers for High Speed Operation
2017-10-23
Double Tunneling-Injection Quantum Dot Lasers for High -Speed Operation The views, opinions and/or findings contained in this report are those of...SECURITY CLASSIFICATION OF: 1. REPORT DATE (DD-MM-YYYY) 4. TITLE AND SUBTITLE 13. SUPPLEMENTARY NOTES 12. DISTRIBUTION AVAILIBILITY STATEMENT 6...State University Title: Double Tunneling-Injection Quantum Dot Lasers for High -Speed Operation Report Term: 0-Other Email: asryan@vt.edu Distribution
Spin-orbit interaction in multiple quantum wells
Energy Technology Data Exchange (ETDEWEB)
Hao, Ya-Fei, E-mail: haoyafei@zjnu.cn [Physics Department, Zhejiang Normal University, Zhejiang 321004 (China)
2015-01-07
In this paper, we investigate how the structure of multiple quantum wells affects spin-orbit interactions. To increase the interface-related Rashba spin splitting and the strength of the interface-related Rashba spin-orbit interaction, we designed three kinds of multiple quantum wells. We demonstrate that the structure of the multiple quantum wells strongly affected the interface-related Rashba spin-orbit interaction, increasing the interface-related Rashba spin splitting to up to 26% larger in multiple quantum wells than in a stepped quantum well. We also show that the cubic Dresselhaus spin-orbit interaction similarly influenced the spin relaxation time of multiple quantum wells and that of a stepped quantum well. The increase in the interface-related Rashba spin splitting originates from the relationship between interface-related Rashba spin splitting and electron probability density. Our results suggest that multiple quantum wells can be good candidates for spintronic devices.
Spin-orbit interaction in multiple quantum wells
International Nuclear Information System (INIS)
Hao, Ya-Fei
2015-01-01
In this paper, we investigate how the structure of multiple quantum wells affects spin-orbit interactions. To increase the interface-related Rashba spin splitting and the strength of the interface-related Rashba spin-orbit interaction, we designed three kinds of multiple quantum wells. We demonstrate that the structure of the multiple quantum wells strongly affected the interface-related Rashba spin-orbit interaction, increasing the interface-related Rashba spin splitting to up to 26% larger in multiple quantum wells than in a stepped quantum well. We also show that the cubic Dresselhaus spin-orbit interaction similarly influenced the spin relaxation time of multiple quantum wells and that of a stepped quantum well. The increase in the interface-related Rashba spin splitting originates from the relationship between interface-related Rashba spin splitting and electron probability density. Our results suggest that multiple quantum wells can be good candidates for spintronic devices
Self-assembly of concentric quantum double rings.
Mano, Takaaki; Kuroda, Takashi; Sanguinetti, Stefano; Ochiai, Tetsuyuki; Tateno, Takahiro; Kim, Jongsu; Noda, Takeshi; Kawabe, Mitsuo; Sakoda, Kazuaki; Kido, Giyuu; Koguchi, Nobuyuki
2005-03-01
We demonstrate the self-assembled formation of concentric quantum double rings with high uniformity and excellent rotational symmetry using the droplet epitaxy technique. Varying the growth process conditions can control each ring's size. Photoluminescence spectra emitted from an individual quantum ring complex show peculiar quantized levels that are specified by the carriers' orbital trajectories.
Vertically coupled double quantum rings at zero magnetic field
Malet, Francesc; Barranco, Manuel; Lipparini, Enrico; Pi, Ricardo Mayol Martí; Climente, Juan Ignacio; Planelles, Josep
2006-01-01
Within local-spin-density functional theory, we have investigated the `dissociation' of few-electron circular vertical semiconductor double quantum ring artificial molecules at zero magnetic field as a function of inter-ring distance. In a first step, the molecules are constituted by two identical quantum rings. When the rings are quantum mechanically strongly coupled, the electronic states are substantially delocalized, and the addition energy spectra of the artificial molecule resemble thos...
Transmission and reflection in a double potential well: doing it the Bohmian way
Stomphorst, R.G.
2002-01-01
The Bohm interpretation of quantum mechanics is applied to a transmission and reflection process in a double potential well. We consider a time-dependent periodic wave function and study the particle trajectories. The average time, eventually transmitted particles stay inside the barrier is the
Electronic Conduction through Atomic Chains, Quantum Well and Quantum Wire
International Nuclear Information System (INIS)
Sharma, A. C.
2011-01-01
Charge transport is dynamically and strongly linked with atomic structure, in nanostructures. We report our ab-initio calculations on electronic transport through atomic chains and the model calculations on electron-electron and electron-phonon scattering rates in presence of random impurity potential in a quantum well and in a quantum wire. We computed synthesis and ballistic transport through; (a) C and Si based atomic chains attached to metallic electrodes, (b) armchair (AC), zigzag (ZZ), mixed, rotated-AC and rotated-ZZ geometries of small molecules made of 2S, 6C and 4H atoms attaching to metallic electrodes, and (c) carbon atomic chain attached to graphene electrodes. Computed results show that synthesis of various atomic chains are practically possible and their transmission coefficients are nonzero for a wide energy range. The ab-initio calculations on electronic transport have been performed with the use of Landauer-type scattering formalism formulated in terms of Grben's functions in combination with ground-state DFT. The electron-electron and electron-phonon scattering rates have been calculated as function of excitation energy both at zero and finite temperatures for disordered 2D and 1D systems. Our model calculations suggest that electron scattering rates in a disordered system are mainly governed by effective dimensionality of a system, carrier concentration and dynamical screening effects.
SUSY formalism for the symmetric double well potential
Indian Academy of Sciences (India)
symmetric double well potential barrier we have obtained a class of exactly solvable potentials subject to moving boundary condition. The eigenstates are also obtained by the same technique. Keywords. SUSY; moving boundary condition; exactly solvable; symmetric double well; NH3 molecule. PACS Nos 02.30.Ik; 03.50.
Quantum interference in laser-induced nonsequential double ionization
Quan, Wei; Hao, XiaoLei; Wang, YanLan; Chen, YongJu; Yu, ShaoGang; Xu, SongPo; Xiao, ZhiLei; Sun, RenPing; Lai, XuanYang; Hu, ShiLin; Liu, MingQing; Shu, Zheng; Wang, XiaoDong; Li, WeiDong; Becker, Wilhelm; Liu, XiaoJun; Chen, Jing
2017-09-01
Quantum interference plays an important role in various intense-laser-driven atomic phenomena, e.g., above-threshold ionization and high-order-harmonic generation, and provides a useful tool in ultrafast imaging of atomic and molecular structure and dynamics. However, it has eluded observation in nonsequential double ionization (NSDI), which serves as an ideal prototype to study electron-electron correlation. Thus far, NSDI usually could be well understood from a semiclassical perspective, where all quantum aspects have been ignored after the first electron has tunneled. Here we perform coincidence measurements for NSDI of xenon subject to laser pulses at 2400 nm. It is found that the intensity dependence of the asymmetry parameter between the yields in the second and fourth quadrants and those in the first and third quadrants of the electron-momentum-correlation distributions exhibits a peculiar fast oscillatory structure, which is beyond the scope of the semiclassical picture. Our theoretical analysis indicates that this oscillation can be attributed to interference between the contributions of different excited states in the recollision-excitation-with-subsequent-ionization channel. Our work demonstrates the significant role of quantum interference in NSDI and may create an additional pathway towards manipulation and imaging of the ultrafast atomic and molecular dynamics in intense laser fields.
Asymmetric quantum well broadband thyristor laser
Liu, Zhen; Wang, Jiaqi; Yu, Hongyan; Zhou, Xuliang; Chen, Weixi; Li, Zhaosong; Wang, Wei; Ding, Ying; Pan, Jiaoqing
2017-11-01
A broadband thyristor laser based on InGaAs/GaAs asymmetric quantum well (AQW) is fabricated by metal organic chemical vapor deposition (MOCVD). The 3-μm-wide Fabry-Perot (FP) ridge-waveguide laser shows an S-shape I-V characteristic and exhibits a flat-topped broadband optical spectrum coverage of ~27 nm (Δ-10 dB) at a center wavelength of ~1090 nm with a total output power of 137 mW under pulsed operation. The AQW structure was carefully designed to establish multiple energy states within, in order to broaden the gain spectrum. An obvious blue shift emission, which is not generally acquired in QW laser diodes, is observed in the broadening process of the optical spectrum as the injection current increases. This blue shift spectrum broadening is considered to result from the prominent band-filling effect enhanced by the multiple energy states of the AQW structure, as well as the optical feedback effect contributed by the thyristor laser structure. Project supported by the National Natural Science Foundation of China (Nos. 61604144, 61504137). Zhen Liu and Jiaqi Wang contributed equally to this work.
Polarization-insensitive quantum-dot coupled quantum-well semiconductor optical amplifier
International Nuclear Information System (INIS)
Huang Lirong; Yu Yi; Tian Peng; Huang Dexiu
2009-01-01
The optical gain of a quantum-dot semiconductor optical amplifier is usually seriously dependent on polarization; we propose a quantum-dot coupled tensile-strained quantum-well structure to obtain polarization insensitivity. The tensile-strained quantum well not only serves as a carrier injection layer of quantum dots but also offers gain to the transverse-magnetic mode. Based on the polarization-dependent coupled carrier rate-equation model, we study carrier competition among quantum well and quantum dots, and study the polarization dependence of the quantum-dot coupled quantum-well semiconductor optical amplifier. We also analyze polarization-dependent photon-mediated carrier distribution among quantum well and quantum dots. It is shown that polarization-insensitive gain can be realized by optimal design
Biexciton binding energy in ZnSe quantum wells and quantum wires
DEFF Research Database (Denmark)
Wagner, Hans-Peter; Langbein, Wolfgang; Hvam, Jørn Märcher
2002-01-01
The biexciton binding energy E-XX is investigated in ZnSe/ZnMgSe quantum wells and quantum wires as a function of the lateral confinement by transient four-wave mixing. In the quantum wells one observes for decreasing well width a significant increase in the relative binding energy, saturating...... for well widths less than 8 nm. In the quantum wires an increase of 30% is found in the smallest quantum wire structures compared to the corresponding quantum well value. A simple analytical model taking into account the quantum confinement in these low-dimensional systems is used to explain...
Optimal tunneling enhances the quantum photovoltaic effect in double quantum dots
International Nuclear Information System (INIS)
Wang, Chen; Cao, Jianshu; Ren, Jie
2014-01-01
We investigate the quantum photovoltaic effect in double quantum dots by applying the nonequilibrium quantum master equation. A drastic suppression of the photovoltaic current is observed near the open circuit voltage, which leads to a large filling factor. We find that there always exists an optimal inter-dot tunneling that significantly enhances the photovoltaic current. Maximal output power will also be obtained around the optimal inter-dot tunneling. Moreover, the open circuit voltage behaves approximately as the product of the eigen-level gap and the Carnot efficiency. These results suggest a great potential for double quantum dots as efficient photovoltaic devices
Quantum Instantons and Quantum Chaos
Jirari, H.; Kröger, H.; Luo, X. Q.; Moriarty, K. J. M.; Rubin, S. G.
1999-01-01
Based on a closed form expression for the path integral of quantum transition amplitudes, we suggest rigorous definitions of both, quantum instantons and quantum chaos. As an example we compute the quantum instanton of the double well potential.
Quantum spin and charge pumping through double quantum dots with ferromagnetic leads
Energy Technology Data Exchange (ETDEWEB)
Pan, Hui, E-mail: hpan@buaa.edu.cn [Department of Physics, Beijing University of Aeronautics and Astronautics, Beijing 100191 (China); Key Laboratory of Micro-Nano Measurement-Manipulation and Physics (Ministry of Education), Beihang University, Beijing 100191 (China); Chen, Ziyu; Zhao, Sufen [Department of Physics, Beijing University of Aeronautics and Astronautics, Beijing 100191 (China); Lue, Rong [Department of Physics, Tsinghua University, Beijing 100084 (China)
2011-06-06
The pumping of electrons through double quantum dots (DQDs) attached to ferromagnetic leads have been theoretically investigated by using the nonequilibrium Green's function method. It is found that an oscillating electric field applied to the quantum dot may give rise to the pumped charge and spin currents. In the case that both leads are ferromagnet, a pure spin current can be generated in the antiparallel magnetization configuration, where no net charge current exists. The possibility of manipulating the pumped spin current is explored by tuning the dot level and the ac field. By making use of various tunings, the magnitude and direction of the pumped spin current can be well controlled. For the case that only one lead is ferromagnetic, both of the charge and spin currents can be pumped and flow in opposite directions on the average. The control of the magnitude and direction of the pumped charge and spin currents is also discussed by means of the magnetic flux threading through the DQD ring. -- Highlights: → We theoretically investigate the pumping of electrons through double quantum dots attached to ferromagnetic leads. → An oscillating electric field applied to the quantum dot may give rise to the pumped charge and spin currents. → When both leads are ferromagnet, a pure spin current can be generated in the antiparallel magnetization configuration. → By making use of various tunings, the magnitude and direction of the pumped spin current can be well controlled. → When only one lead is ferromagnetic, both of the charge and spin currents can be pumped and flow in opposite directions.
Injection Locking of a Semiconductor Double Quantum Dot Micromaser.
Liu, Y-Y; Stehlik, J; Gullans, M J; Taylor, J M; Petta, J R
2015-11-01
Emission linewidth is an important figure of merit for masers and lasers. We recently demonstrated a semiconductor double quantum dot (DQD) micromaser where photons are generated through single electron tunneling events. Charge noise directly couples to the DQD energy levels, resulting in a maser linewidth that is more than 100 times larger than the Schawlow-Townes prediction. Here we demonstrate a linewidth narrowing of more than a factor 10 by locking the DQD emission to a coherent tone that is injected to the input port of the cavity. We measure the injection locking range as a function of cavity input power and show that it is in agreement with the Adler equation. The position and amplitude of distortion sidebands that appear outside of the injection locking range are quantitatively examined. Our results show that this unconventional maser, which is impacted by strong charge noise and electron-phonon coupling, is well described by standard laser models.
Local Gate Control of a Carbon Nanotube Double Quantum Dot
2016-04-04
describ- ing the levitation . Quantitative comparisons are made difficult by the complicated aniso- tropy of the nematic’s viscoelasticity (21). However...director fields. For example, as a straightforward extension of the levitation , a liquid crystal that twists through many periods (such as a cholesteric...Nanotube Double Quantum Dot N. Mason,*† M. J. Biercuk,* C. M. Marcus† We have measured carbon nanotube quantum dots with multiple electro- static gates and
Thermal activation of carriers from semiconductor quantum wells
International Nuclear Information System (INIS)
Johnston, M.B.; Herz, L.M.; Dao, L.V.; Gal, M.; Tan, H.H.; Jagadish, C.
1999-01-01
Full text: We have conducted a systematic investigation of the thermal excitation of carriers in confined states of quantum wells. Carriers may be injected into a sample containing a quantum well electrically or optically, once there they rapidly thermalise and are captured by the confined state of the quantum well. Typically electrons and holes recombine radiatively from their respective quantum well states. As a quantum well sample is heated from low temperatures (∼10K), phonon interactions increase which leads to carriers being excited from the well region into the higher energy, barrier region of the sample. Since carrier recombination from barrier regions is via non-radiative processes, there is strong temperature dependence of photoluminescence from the quantum well region. We measured quantum well photoluminescence as a function of excitation intensity and wavelength over the temperature range from 8K to 300K. In high quality InGaAs quantum wells we found unexpected intensity dependence of the spectrally integrated temperature dependent photoluminescence. We believe that this is evidence for by the existence of saturable states at the interfaces of the quantum wells
Double stochastic matrices in quantum mechanics
International Nuclear Information System (INIS)
Louck, J.D.
1997-01-01
The general set of doubly stochastic matrices of order n corresponding to ordinary nonrelativistic quantum mechanical transition probability matrices is given. Lande's discussion of the nonquantal origin of such matrices is noted. Several concrete examples are presented for elementary and composite angular momentum systems with the focus on the unitary symmetry associated with such systems in the spirit of the recent work of Bohr and Ulfbeck. Birkhoff's theorem on doubly stochastic matrices of order n is reformulated in a geometrical language suitable for application to the subset of quantum mechanical doubly stochastic matrices. Specifically, it is shown that the set of points on the unit sphere in cartesian n'-space is subjective with the set of doubly stochastic matrices of order n. The question is raised, but not answered, as to what is the subset of points of this unit sphere that correspond to the quantum mechanical transition probability matrices, and what is the symmetry group of this subset of matrices
Design and Analysis of a Multicolor Quantum Well Infrared Photodetector
National Research Council Canada - National Science Library
Alves, Fabio D. P
2005-01-01
.... These characteristics have been found in quantum well infrared photodetectors (QWIP). Driven by these applications, a QWIP photodetector capable of detecting simultaneously infrared emissions within near infrared (NIR...
Symmetry breaking in the double-well hermitian matrix models
Brower, R C; Jain, S; Tan, C I; Brower, Richard C.; Deo, Nevidita; Jain, Sanjay; Tan, Chung-I
1993-01-01
We study symmetry breaking in $Z_2$ symmetric large $N$ matrix models. In the planar approximation for both the symmetric double-well $\\phi^4$ model and the symmetric Penner model, we find there is an infinite family of broken symmetry solutions characterized by different sets of recursion coefficients $R_n$ and $S_n$ that all lead to identical free energies and eigenvalue densities. These solutions can be parameterized by an arbitrary angle $\\theta(x)$, for each value of $x = n/N < 1$. In the double scaling limit, this class reduces to a smaller family of solutions with distinct free energies already at the torus level. For the double-well $\\phi^4$ theory the double scaling string equations are parameterized by a conserved angular momentum parameter in the range $0 \\le l < \\infty$ and a single arbitrary $U(1)$ phase angle.
Optical Two-Dimensional Spectroscopy of Disordered Semiconductor Quantum Wells and Quantum Dots
Energy Technology Data Exchange (ETDEWEB)
Cundiff, Steven T. [Univ. of Colorado, Boulder, CO (United States)
2016-05-03
This final report describes the activities undertaken under grant "Optical Two-Dimensional Spectroscopy of Disordered Semiconductor Quantum Wells and Quantum Dots". The goal of this program was to implement optical 2-dimensional Fourier transform spectroscopy and apply it to electronic excitations, including excitons, in semiconductors. Specifically of interest are quantum wells that exhibit disorder due to well width fluctuations and quantum dots. In both cases, 2-D spectroscopy will provide information regarding coupling among excitonic localization sites.
Quantum-well exciton polariton emission from multi-quantum-well wire structures
Kohl, M.; Heitmann, D.; Grambow, P.; Ploog, K.
The radiative decay of quantum-well exciton (QWE) polaritons in microstructured Al0.3Ga0.7As - GaAs multi-quantum wells (MQW) has been studied by photoluminescence spectroscopy. Periodic wire structures with lateral periodicities a = 250-500 nm and lateral widths t = 100-200 nm have been fabricated by plasma etching. The thickness of the QWs was 13 nm. In the QW wire samples the free-exciton photoluminescence was strongly reduced and the QWE polariton emission was observed as a maximum peaked at a 3 meV higher energy than the free QWE transition. In samples which had only a microstructured cladding layer, the free-exciton photoluminescence was dominant in the spectrum and the QWE polariton emission was observed as a shoulder on the high-energy side of the free QWE transition. In addition, two transitions at the low energy side of the free QWE photoluminescence were present in the microstructured samples, which were related to etching induced states.
Electron-longitudinal-acoustic-phonon scattering in double-quantum-dot based quantum gates
International Nuclear Information System (INIS)
Zhao Peiji; Woolard, Dwight L.
2008-01-01
We propose a nanostructure design which can significantly suppress longitudinal-acoustic-phonon-electron scattering in double-quantum-dot based quantum gates for quantum computing. The calculated relaxation rates vs. bias voltage exhibit a double-peak feature with a minimum approaching 10 5 s -1 . In this matter, the energy conservation law prohibits scattering contributions from phonons with large momenta; furthermore, increasing the barrier height between the double quantum dots reduces coupling strength between the dots. Hence, the joint action of the energy conservation law and the decoupling greatly reduces the scattering rates. The degrading effects of temperatures can be reduced simply by increasing the height of the barrier between the dots
Equilibration and nonclassicality of a double-well potential.
Campbell, Steve; De Chiara, Gabriele; Paternostro, Mauro
2016-01-29
A double well loaded with bosonic atoms represents an ideal candidate to simulate some of the most interesting aspects in the phenomenology of thermalisation and equilibration. Here we report an exhaustive analysis of the dynamics and steady state properties of such a system locally in contact with different temperature reservoirs. We show that thermalisation only occurs 'accidentally'. We further examine the nonclassical features and energy fluxes implied by the dynamics of the double-well system, thus exploring its finite-time thermodynamics in relation to the settlement of nonclassical correlations between the wells.
Double-well magnetic trap for Bose-Einstein condensates
International Nuclear Information System (INIS)
Thomas, N.R.; Wilson, A.C.; Foot, C.J.
2002-01-01
We present a magnetic trapping scheme for neutral atoms based on a hybrid of Ioffe-Pritchard and time-averaged orbiting potential traps. The resulting double-well magnetic potential has readily controllable barrier height and well separation. This offers a new tool for studying the behavior of Bose condensates in double-well potentials, and in particular for atom optics and interferometry. We formulate a description for the potential of this magnetic trap and discuss practical issues such as loading with atoms, evaporative cooling and manipulating the potential
Monolithic integration of a resonant tunneling diode and a quantum well semiconductor laser
Grave, I.; Kan, S. C.; Griffel, G.; Wu, S. W.; Sa'Ar, A.
1991-01-01
A monolithic integration of a double barrier AlAs/GaAs resonant tunneling diode and a GaAs/AlGaAs quantum well laser is reported. Negative differential resistance and negative differential optical response are observed at room temperature. The device displays bistable electrical and optical characteristics which are voltage controlled. Operation as a two-state optical memory is demonstrated.
Broadband tunability of gain-flattened quantum-well semiconductor lasers with an external grating
International Nuclear Information System (INIS)
Mittelstein, M.; Mehuys, D.; Yariv, A.; Sarfaty, R.; Ungar, J.E.
1989-01-01
Semiconductor injection lasers are known to be tunable over a range of order kΒ · T. Quantum-well lasers, in particular, are shown to exhibit flattened, broadband gain spectra at a particular pumping condition. The gain requirement for a grating-tuned external cavity configuration is examined and is applied to a semiconductor quantum-well laser with an optimized length of gain region. The coupled-cavity formalism is employed to examine the conditions for continuous tuning. The possible tuning range of double-heterostructure lasers is compared to that of quantum-well lasers. The predicted broadband tunability of quantum-well lasers is confirmed experimentally by grating-tuning of uncoated lasers exceeding 120 nm, with single, longitudinal mode output power exceeding 300 mW
Quantum confined Stark effect in Gaussian quantum wells: A tight-binding study
International Nuclear Information System (INIS)
Ramírez-Morales, A.; Martínez-Orozco, J. C.; Rodríguez-Vargas, I.
2014-01-01
The main characteristics of the quantum confined Stark effect (QCSE) are studied theoretically in quantum wells of Gaussian profile. The semi-empirical tight-binding model and the Green function formalism are applied in the numerical calculations. A comparison of the QCSE in quantum wells with different kinds of confining potential is presented
Quantum confined Stark effect in Gaussian quantum wells: A tight-binding study
Energy Technology Data Exchange (ETDEWEB)
Ramírez-Morales, A.; Martínez-Orozco, J. C.; Rodríguez-Vargas, I. [Unidad Académica de Física, Universidad Autónoma de Zacatecas, Calzada Solidaridad Esquina Con Paseo La Bufa S/N, 98060 Zacatecas, Zac. (Mexico)
2014-05-15
The main characteristics of the quantum confined Stark effect (QCSE) are studied theoretically in quantum wells of Gaussian profile. The semi-empirical tight-binding model and the Green function formalism are applied in the numerical calculations. A comparison of the QCSE in quantum wells with different kinds of confining potential is presented.
Exciton absorption of entangled photons in semiconductor quantum wells
Rodriguez, Ferney; Guzman, David; Salazar, Luis; Quiroga, Luis; Condensed Matter Physics Group Team
2013-03-01
The dependence of the excitonic two-photon absorption on the quantum correlations (entanglement) of exciting biphotons by a semiconductor quantum well is studied. We show that entangled photon absorption can display very unusual features depending on space-time-polarization biphoton parameters and absorber density of states for both bound exciton states as well as for unbound electron-hole pairs. We report on the connection between biphoton entanglement, as quantified by the Schmidt number, and absorption by a semiconductor quantum well. Comparison between frequency-anti-correlated, unentangled and frequency-correlated biphoton absorption is addressed. We found that exciton oscillator strengths are highly increased when photons arrive almost simultaneously in an entangled state. Two-photon-absorption becomes a highly sensitive probe of photon quantum correlations when narrow semiconductor quantum wells are used as two-photon absorbers. Research funds from Facultad de Ciencias, Universidad de los Andes
Multichannel scattering of charge carriers on quantum well heterostructures
Galiev, V I; Polupanov, A F; Goldis, E M; Tansli, T L
2002-01-01
An efficient numerical analytical method has been developed for finding continuum spectrum states in quantum well systems with arbitrary potential profiles that are described by coupled Schroedinger equations. Scattering states and S matrix have been built for the case of multichannel scattering in one-dimensional systems with quantum wells and their symmetry properties are obtained and analyzed. The method is applied for studying hole scattering by strained GaInAs-InGaAsP quantum wells. Coefficients of the hole transmission and reflection as well as delay time are calculated as functions of the energy of the incident hole for various values of parameters of structures and values of the momentum
QCAD simulation and optimization of semiconductor double quantum dots
Energy Technology Data Exchange (ETDEWEB)
Nielsen, Erik; Gao, Xujiao; Kalashnikova, Irina; Muller, Richard Partain; Salinger, Andrew Gerhard; Young, Ralph Watson
2013-12-01
We present the Quantum Computer Aided Design (QCAD) simulator that targets modeling quantum devices, particularly silicon double quantum dots (DQDs) developed for quantum qubits. The simulator has three di erentiating features: (i) its core contains nonlinear Poisson, e ective mass Schrodinger, and Con guration Interaction solvers that have massively parallel capability for high simulation throughput, and can be run individually or combined self-consistently for 1D/2D/3D quantum devices; (ii) the core solvers show superior convergence even at near-zero-Kelvin temperatures, which is critical for modeling quantum computing devices; (iii) it couples with an optimization engine Dakota that enables optimization of gate voltages in DQDs for multiple desired targets. The Poisson solver includes Maxwell- Boltzmann and Fermi-Dirac statistics, supports Dirichlet, Neumann, interface charge, and Robin boundary conditions, and includes the e ect of dopant incomplete ionization. The solver has shown robust nonlinear convergence even in the milli-Kelvin temperature range, and has been extensively used to quickly obtain the semiclassical electrostatic potential in DQD devices. The self-consistent Schrodinger-Poisson solver has achieved robust and monotonic convergence behavior for 1D/2D/3D quantum devices at very low temperatures by using a predictor-correct iteration scheme. The QCAD simulator enables the calculation of dot-to-gate capacitances, and comparison with experiment and between solvers. It is observed that computed capacitances are in the right ballpark when compared to experiment, and quantum con nement increases capacitance when the number of electrons is xed in a quantum dot. In addition, the coupling of QCAD with Dakota allows to rapidly identify which device layouts are more likely leading to few-electron quantum dots. Very efficient QCAD simulations on a large number of fabricated and proposed Si DQDs have made it possible to provide fast feedback for design
Magnetic Anticrossing of 1D Subbands in Coupled Ballistic Double Quantum Wires
International Nuclear Information System (INIS)
Blount, Mark A.; Moon, Jeong-Sun; Simmons, Jerry A.; Lyo, Sungkwun K.; Wendt, Joel R.; Reno, John L.
2000-01-01
We study the low-temperature in-plane magnetoconductance of vertically coupled double quantum wires. Using a novel flip-chip technique, the wires are defined by two pairs of mutually aligned split gates on opposite sides of a s 1 micron thick AlGaAs/GaAs double quantum well heterostructure. We observe quantized conductance steps due to each quantum well and demonstrate independent control of each ID wire. A broad dip in the magnetoconductance at -6 T is observed when a magnetic field is applied perpendicular to both the current and growth directions. This conductance dip is observed only when 1D subbands are populated in both the top and bottom constrictions. This data is consistent with a counting model whereby the number of subbands crossing the Fermi level changes with field due to the formation of an anticrossing in each pair of 1D subbands
Fisher information and quantum potential well model for finance
Energy Technology Data Exchange (ETDEWEB)
Nastasiuk, V.A., E-mail: nasa@i.ua
2015-09-25
The probability distribution function (PDF) for prices on financial markets is derived by extremization of Fisher information. It is shown how on that basis the quantum-like description for financial markets arises and different financial market models are mapped by quantum mechanical ones. - Highlights: • The financial Schrödinger equation is derived using the principle of minimum Fisher information. • Statistical models for price variation are mapped by the quantum models of coupled particle. • The model of quantum particle in parabolic potential well corresponds to Efficient market.
Fisher information and quantum potential well model for finance
International Nuclear Information System (INIS)
Nastasiuk, V.A.
2015-01-01
The probability distribution function (PDF) for prices on financial markets is derived by extremization of Fisher information. It is shown how on that basis the quantum-like description for financial markets arises and different financial market models are mapped by quantum mechanical ones. - Highlights: • The financial Schrödinger equation is derived using the principle of minimum Fisher information. • Statistical models for price variation are mapped by the quantum models of coupled particle. • The model of quantum particle in parabolic potential well corresponds to Efficient market
Students' Conceptual Difficulties in Quantum Mechanics: Potential Well Problems
Ozcan, Ozgur; Didis, Nilufer; Tasar, Mehmet Fatih
2009-01-01
In this study, students' conceptual difficulties about some basic concepts in quantum mechanics like one-dimensional potential well problems and probability density of tunneling particles were identified. For this aim, a multiple choice instrument named Quantum Mechanics Conceptual Test has been developed by one of the researchers of this study…
Localized chaoticity in two linearly coupled inverted double-well ...
African Journals Online (AJOL)
Two linearly coupled inverted double-well oscillators for a fixed energy and varying coupling strength were studied. The dynamics yielded a chaotic system in which the Poincare surface was characterised by two non-mixing regions, one of regular motion and the other region that became chaotic as the coupling increased.
SUSY formalism for the symmetric double well potential
Indian Academy of Sciences (India)
Using first- and second-order supersymmetric Darboüx formalism and starting with symmetric double well potential barrier we have obtained a class of exactly solvable potentials subject to moving boundary condition. The eigenstates are also obtained by the same technique.
International Nuclear Information System (INIS)
Jermakov, V.M.
1997-01-01
In the case of low transparency of barriers, tunneling of electrons through a double barrier system with account their Coulomb interaction in the inter barrier space (quantum well) is considered. The quantum state of the well is supposed to be triply degenerated. It was shown that the dependence of quantum well accupation on the applied bias has a step like character at low temperatures, and there is a threshold value in the region of small applied bias. These properties can be explained by splitting of states in the well due to the electron interaction. The considered system also has bistability properties. This is due to the possibility for electrons to occupy upper levels in the well while lower levels remain empty. Charge fluctuations in the well are also discussed
Dephasing and hyperfine interaction in carbon nanotubes double quantum dots
DEFF Research Database (Denmark)
Reynoso, Andres Alejandro; Flensberg, Karsten
2012-01-01
We study theoretically the return probability experiment, which is used to measure the dephasing time T-2*, in a double quantum dot (DQD) in semiconducting carbon nanotubes with spin-orbit coupling and disorder-induced valley mixing. Dephasing is due to hyperfine interaction with the spins of the C...... with these for DQDs in clean nanotubes, whereas the disorder effect is always relevant when the magnetic field is perpendicular to the nanotube axis....
Piezo-Phototronic Effect in a Quantum Well Structure.
Huang, Xin; Du, Chunhua; Zhou, Yongli; Jiang, Chunyan; Pu, Xiong; Liu, Wei; Hu, Weiguo; Chen, Hong; Wang, Zhong Lin
2016-05-24
With enhancements in the performance of optoelectronic devices, the field of piezo-phototronics has attracted much attention, and several theoretical works have been reported based on semiclassical models. At present, the feature size of optoelectronic devices are rapidly shrinking toward several tens of nanometers, which results in the quantum confinement effect. Starting from the basic piezoelectricity equation, Schrödinger equation, Poisson equation, and Fermi's golden rule, a self-consistent theoretical model is proposed to study the piezo-phototronic effect in the framework of perturbation theory in quantum mechanics. The validity and universality of this model are well-proven with photoluminescence measurements in a single GaN/InGaN quantum well and multiple GaN/InGaN quantum wells. This study provides important insight into the working principle of nanoscale piezo-phototronic devices as well as guidance for the future device design.
New method for control over exciton states in quantum wells
International Nuclear Information System (INIS)
Maslov, A Yu; Proshina, O V
2010-01-01
The theoretical study of the exciton states in the quantum well is performed with regard to the distinctions of the dielectric properties of quantum well and barrier materials. The strong exciton-phonon interaction is shown to be possible in materials with high ionicity. This leads to the essential modification of the exciton states. The relationship between the exciton binding energy, along with oscillator strength and the barrier material dielectric properties is found. This suggests the feasibility of the exciton spectrum parameter control by the choice of the barrier material. It is shown that such exciton spectrum engineering also is possible in the quantum wells based on the materials with low ionicity. The reason is the dielectric confinement effect in the quantum wells.
International Nuclear Information System (INIS)
Wang Hongmei; Xu Huaizhe; Zhang Yafei
2005-01-01
A few of mistakes made in transfer matrix method of Airy functions in previous literatures have been identified and corrected in this work. By using our improved transfer matrix method of Airy functions, quasi-bound level dependence upon carrier effective masses, bias, well width, barrier width and height has been investigated systematically for several biased/unbiased double/triple-barrier quantum well structures. Its validity and accuracy has been proved by comparisons with other currently used techniques. It is shown that our improved transfer matrix method of Airy functions is more promising for evaluating and designing intra-band transition far-infrared detectors and quantum cascade lasers
Electron Raman scattering in asymmetrical multiple quantum wells
International Nuclear Information System (INIS)
Betancourt-Riera, R; Rosas, R; Marin-Enriquez, I; Riera, R; Marin, J L
2005-01-01
Optical properties of asymmetrical multiple quantum wells for the construction of quantum cascade lasers are calculated, and expressions for the electronic states of asymmetrical multiple quantum wells are presented. The gain and differential cross-section for an electron Raman scattering process are obtained. Also, the emission spectra for several scattering configurations are discussed, and the corresponding selection rules for the processes involved are studied; an interpretation of the singularities found in the spectra is given. The electron Raman scattering studied here can be used to provide direct information about the efficiency of the lasers
Two color photodetector using an asymmetric quantum well structure
Lantz, Kevin R.
2002-01-01
Approved for public release; distribution is unlimited The past twenty years have seen an explosion in the realm of infrared detection technology fueled by improvements in III-V semiconductor technology and by new semiconductor growth methods. One of the fastest growing areas of this research involves the use of bandgap engineering in order to create artificial quantum wells for use in Quantum Well Infrared Photodetectors (QWIPs). QWIPs have an advantage over other infrared detectors such ...
Remote optically-tunable transimpedance amplifiers for quantum well diodes
Energy Technology Data Exchange (ETDEWEB)
Carraresi, L.; Landi, G.; Rocchi, S.; Vignoli, V
1999-08-01
In a previous paper we discussed the advantages in using linear optical transmission systems based on quantum well diodes in modern high energy physics experiments. In this paper, after a short summary of the quantum well theory, the electronics section of the above optical transmission system is presented. In particular the basic configuration of a transimpedance amplifier and the arrangement of an optical remote control system for the amplifier gain and bandwidth tuning are discussed.
Remote optically-tunable transimpedance amplifiers for quantum well diodes
International Nuclear Information System (INIS)
Carraresi, L.; Landi, G.; Rocchi, S.; Vignoli, V.
1999-01-01
In a previous paper we discussed the advantages in using linear optical transmission systems based on quantum well diodes in modern high energy physics experiments. In this paper, after a short summary of the quantum well theory, the electronics section of the above optical transmission system is presented. In particular the basic configuration of a transimpedance amplifier and the arrangement of an optical remote control system for the amplifier gain and bandwidth tuning are discussed
Quantum double actions on operator algebras and orbifold quantum field theories
International Nuclear Information System (INIS)
Mueger, M.
1996-06-01
Starting from a local quantum field theory with an unbroken compact symmetry group G in 1+1 dimensional spacetime we construct disorder fields implementing gauge transformations on the fields (order variables) localized in a wedge region. Enlarging the local algebras by these disorder fields we obtain a nonlocal field theory, the fixpoint algebras of which under the appropriately extended action of the group G are shown to satisfy Haag duality in every simple sector. The specifically 1+1 dimensional phenomenon of violation of Haag duality of fixpoint nets is thereby clarified. In the case of a finite group G the extended theory is acted upon in a completely canonical way by the quantum double D(G) and satisfies R-matrix commutation relations as well as a Verlinde algebra. Furthermore, our methods are suitable for a concise and transparent approach to bosonization. The main technical ingredient is a strengthened version of the split property which should hold in all reasonable massive theories. In the appendices (part of) the results are extended to arbitary locally compact groups and our methods are adapted to chiral theories on the circle. (orig.)
Sidewall gated double well quasi-one-dimensional resonant tunneling transistors
Kolagunta, V. R.; Janes, D. B.; Melloch, M. R.; Youtsey, C.
1997-12-01
We present gating characteristics of submicron vertical resonant tunneling transistors in double quantum well heterostructures. Current-voltage characteristics at room temperature and 77 K for devices with minimum feature widths of 0.9 and 0.7 μm are presented and discussed. The evolution of the I-V characteristics with increasing negative gate biases is related to the change in the lateral confinement, with a transition from a large area 2D to a quasi-1D. Even gating of multiple wells and lateral confinement effects observable at 77 K make these devices ideally suited for applications in multi-valued logic systems and low-dimensional structures.
Erasure without Work in an Asymmetric Double-Well Potential.
Gavrilov, Momčilo; Bechhoefer, John
2016-11-11
According to Landauer's principle, erasing a memory requires an average work of at least kTln2 per bit. Recent experiments have confirmed this prediction for a one-bit memory represented by a symmetric double-well potential. Here, we present an experimental study of erasure for a memory encoded in an asymmetric double-well potential. Using a feedback trap, we find that the average work to erase can be less than kTln2. Surprisingly, erasure protocols that differ subtly give measurably different values for the asymptotic work, a result we explain by showing that one protocol is symmetric with the respect to time reversal, while the other is not. The differences between the protocols help clarify the distinctions between thermodynamic and logical reversibility.
Decoherence in a double-slit quantum eraser
International Nuclear Information System (INIS)
Torres-Ruiz, F. A.; Lima, G.; Delgado, A.; Saavedra, C.; Padua, S.
2010-01-01
We study and experimentally implement a double-slit quantum eraser in the presence of a controlled decoherence mechanism. A two-photon state, produced in a spontaneous parametric down-conversion process, is prepared in a maximally entangled polarization state. A birefringent double slit is illuminated by one of the down-converted photons, and it acts as a single-photon two-qubits controlled-not gate that couples the polarization with the transversal momentum of these photons. The other photon, which acts as a which-path marker, is sent through a Mach-Zehnder-like interferometer. When the interferometer is partially unbalanced, it behaves as a controlled source of decoherence for polarization states of down-converted photons. We show the transition from wavelike to particle-like behavior of the signal photons crossing the double slit as a function of the decoherence parameter, which depends on the length path difference at the interferometer.
Nonlinear dynamics of ultracold gases in double-well lattices
International Nuclear Information System (INIS)
Yukalov, V I; Yukalova, E P
2009-01-01
An ultracold gas is considered, loaded into a lattice, each site of which is formed by a double-well potential. Initial conditions, after the loading, correspond to a nonequilibrium state. The nonlinear dynamics of the system, starting with a nonequilibrium state, is analysed in the local-field approximation. The importance of taking into account attenuation, caused by particle collisions, is emphasized. The presence of this attenuation dramatically influences the system dynamics
Connection between noise and quantum correlations in a double quantum dot
Bodoky, F.; Belzig, W.; Bruder, C.
We investigate the current and noise characteristics of a double quantum dot system. The strong correlations induced by the Coulomb interaction and the Pauli principle create entangled two-electron states and lead to signatures in the transport properties. We show that the interaction parameter Ø,
Computer-automated tuning of semiconductor double quantum dots into the single-electron regime
Energy Technology Data Exchange (ETDEWEB)
Baart, T. A.; Vandersypen, L. M. K. [QuTech, Delft University of Technology, P.O. Box 5046, 2600 GA Delft (Netherlands); Kavli Institute of Nanoscience, Delft University of Technology, P.O. Box 5046, 2600 GA Delft (Netherlands); Eendebak, P. T. [QuTech, Delft University of Technology, P.O. Box 5046, 2600 GA Delft (Netherlands); Netherlands Organisation for Applied Scientific Research (TNO), P.O. Box 155, 2600 AD Delft (Netherlands); Reichl, C.; Wegscheider, W. [Solid State Physics Laboratory, ETH Zürich, 8093 Zürich (Switzerland)
2016-05-23
We report the computer-automated tuning of gate-defined semiconductor double quantum dots in GaAs heterostructures. We benchmark the algorithm by creating three double quantum dots inside a linear array of four quantum dots. The algorithm sets the correct gate voltages for all the gates to tune the double quantum dots into the single-electron regime. The algorithm only requires (1) prior knowledge of the gate design and (2) the pinch-off value of the single gate T that is shared by all the quantum dots. This work significantly alleviates the user effort required to tune multiple quantum dot devices.
Hydrogenic donor in a quantum well with an electric field
International Nuclear Information System (INIS)
Jayakumar, K.; Balasubramanian, S.; Tomak, M.
1985-08-01
Variational calculations of the binding energy of a hydrogenic donor in a quantum well formed by GaAs and Gasub(1-x)A1sub(x)As with a constant electric field are performed for different electric fields and well widths. A critical electric field is defined and its variation with well width is presented. (author)
Computer-automated tuning of semiconductor double quantum dots into the single-electron regime
Baart, T.A.; Eendebak, P.T.; Reichl, C.; Wegscheider, W.; Vandersypen, L.M.K.
2016-01-01
We report the computer-automated tuning of gate-defined semiconductor double quantum dots in GaAs heterostructures. We benchmark the algorithm by creating three double quantum dots inside a linear array of four quantum dots. The algorithm sets the correct gate voltages for all the gates to tune the
Korenev, V. V.; Savelyev, A. V.; Zhukov, A. E.; Omelchenko, A. V.; Maximov, M. V.
2014-12-01
It is shown in analytical form that the carrier capture from the matrix as well as carrier dynamics in quantum dots plays an important role in double-state lasing phenomenon. In particular, the de-synchronization of hole and electron captures allows one to describe recently observed quenching of ground-state lasing, which takes place in quantum dot lasers operating in double-state lasing regime at high injection. From the other side, the detailed analysis of charge carrier dynamics in the single quantum dot enables one to describe the observed light-current characteristics and key temperature dependences.
International Nuclear Information System (INIS)
Korenev, V V; Savelyev, A V; Zhukov, A E; Omelchenko, A V; Maximov, M V
2014-01-01
It is shown in analytical form that the carrier capture from the matrix as well as carrier dynamics in quantum dots plays an important role in double-state lasing phenomenon. In particular, the de-synchronization of hole and electron captures allows one to describe recently observed quenching of ground-state lasing, which takes place in quantum dot lasers operating in double-state lasing regime at high injection. From the other side, the detailed analysis of charge carrier dynamics in the single quantum dot enables one to describe the observed light-current characteristics and key temperature dependences
Crystal Phase Quantum Well Emission with Digital Control
DEFF Research Database (Denmark)
Assali, S.; Laehnemann, J.; Vu, Thi Thu Trang
2017-01-01
One of the major challenges in the growth of quantum well and quantum dot heterostructures is the realization of atomically sharp interfaces. Nanowires provide a new opportunity to engineer the band structure as they facilitate the controlled switching of the crystal structure between the zinc......-blende (ZB) and wurtzite (WZ) phases. Such a crystal phase switching results in the formation of crystal phase quantum wells (CPQWs) and quantum dots (CPQDs). For GaP CPQWs, the inherent electric fields due to the discontinuity of the spontaneous polarization at the WZ/ZB junctions lead to the confinement...... of both types of charge carriers at the opposite interfaces of the WZ/ZB/WZ structure. This confinement leads to a novel type of transition across a ZB flat plate barrier. Here, we show digital tuning of the visible emission of WZ/ZB/WZ CPQWs in a GaP nanowire by changing the thickness of the ZB barrier...
Zero field spin splitting in asymmetric quantum wells
International Nuclear Information System (INIS)
Hao Yafei
2012-01-01
Spin splitting of asymmetric quantum wells is theoretically investigated in the absence of any electric field, including the contribution of interface-related Rashba spin-orbit interaction as well as linear and cubic Dresselhaus spin-orbit interaction. The effect of interface asymmetry on three types of spin-orbit interaction is discussed. The results show that interface-related Rashba and linear Dresselhaus spin-orbit interaction can be increased and cubic Dresselhaus spin-orbit interaction can be decreased by well structure design. For wide quantum wells, the cubic Dresselhaus spin-orbit interaction dominates under certain conditions, resulting in decreased spin relaxation time.
Some double resonance and multiple quantum NMR studies in solids
Energy Technology Data Exchange (ETDEWEB)
Wemmer, D.E.
1978-08-01
The first section of this work presents the theory and experimental applications to analysis of molecular motion of chemical shielding lineshapes obtained with high resolution double resonance NMR techniques. Analysis of /sup 13/C powder lineshapes in hexamethylbenzene (HMB) and decamethylferrocene (DMFe) show that these molecules reorient in a jumping manner about the symmetry axis. Analysis of proton chemical shielding lineshapes of residual protons in heavy ice (D/sub 2/O) show that protons are exchanged among the tetrahedral positions of neighboring oxygen atoms, consistent with motion expected from defect migration. The second section describes the application of Fourier Transform Double Quantum NMR to measurement of chemical shielding of deuterium in powder samples. Studies of partially deuterated benzene and ferrocene give equal shielding anisotropies, ..delta..sigma = -6.5 ppM. Theoretical predictions and experimental measurements of dipolar couplings between deuterons using FTDQ NMR are presented. Crystals of BaClO/sub 3/.D/sub 2/O, ..cap alpha..,..beta.. d-2 HMB and ..cap alpha..,..beta..,..gamma.. d-3 HMB were studied, as were powders of d-2 HMB and anisic acid. The third section discusses general multiple quantum spectroscopy in dipolar coupled spin systems. Theoretical description is made for creation and detection of coherences between states without quantum number selection rules ..delta..m = +-1. Descriptions of techniques for partial selectivity of order in preparation and detection of multiple quantum coherences are made. The effects on selectivity and resolution of echo pulses during multiple quantum experiments are discussed. Experimental observation of coherences up to order 6 have been made in a sample of benzene dissolved in a liquid crystal. Experimental verifications of order selection and echo generation have been made.
Some double resonance and multiple quantum NMR studies in solids
International Nuclear Information System (INIS)
Wemmer, D.E.
1978-08-01
The first section of this work presents the theory and experimental applications to analysis of molecular motion of chemical shielding lineshapes obtained with high resolution double resonance NMR techniques. Analysis of 13 C powder lineshapes in hexamethylbenzene (HMB) and decamethylferrocene (DMFe) show that these molecules reorient in a jumping manner about the symmetry axis. Analysis of proton chemical shielding lineshapes of residual protons in heavy ice (D 2 O) show that protons are exchanged among the tetrahedral positions of neighboring oxygen atoms, consistent with motion expected from defect migration. The second section describes the application of Fourier Transform Double Quantum NMR to measurement of chemical shielding of deuterium in powder samples. Studies of partially deuterated benzene and ferrocene give equal shielding anisotropies, Δsigma = -6.5 ppM. Theoretical predictions and experimental measurements of dipolar couplings between deuterons using FTDQ NMR are presented. Crystals of BaClO 3 .D 2 O, α,β d-2 HMB and α,β,γ d-3 HMB were studied, as were powders of d-2 HMB and anisic acid. The third section discusses general multiple quantum spectroscopy in dipolar coupled spin systems. Theoretical description is made for creation and detection of coherences between states without quantum number selection rules Δm = +-1. Descriptions of techniques for partial selectivity of order in preparation and detection of multiple quantum coherences are made. The effects on selectivity and resolution of echo pulses during multiple quantum experiments are discussed. Experimental observation of coherences up to order 6 have been made in a sample of benzene dissolved in a liquid crystal. Experimental verifications of order selection and echo generation have been made
Symmetry breaking in the double-well hermitian matrix models
International Nuclear Information System (INIS)
Brower, R.C.; Deo, N.; Jain, S.; Tan, C.I.
1993-01-01
We study symmetry breaking in Z 2 symmetric large N matrix models. In the planar approximation for both the symmetric double-well φ 4 model and the symmetric Penner model, we find there is an infinite family of broken symmetry solutions characterized by different sets of recursion coefficients R n and S n that all lead to identical free energies and eigenvalue densities. These solutions can be parameterized by an arbitrary angle θ(x), for each value of x=n/N 4 theory the double scaling string equations are parameterized by a conserved angular momentum parameter in the range 0≤l<∞ and a single arbitrary U(1) phase angle. (orig.)
Crystal Phase Quantum Well Emission with Digital Control.
Assali, S; Lähnemann, J; Vu, T T T; Jöns, K D; Gagliano, L; Verheijen, M A; Akopian, N; Bakkers, E P A M; Haverkort, J E M
2017-10-11
One of the major challenges in the growth of quantum well and quantum dot heterostructures is the realization of atomically sharp interfaces. Nanowires provide a new opportunity to engineer the band structure as they facilitate the controlled switching of the crystal structure between the zinc-blende (ZB) and wurtzite (WZ) phases. Such a crystal phase switching results in the formation of crystal phase quantum wells (CPQWs) and quantum dots (CPQDs). For GaP CPQWs, the inherent electric fields due to the discontinuity of the spontaneous polarization at the WZ/ZB junctions lead to the confinement of both types of charge carriers at the opposite interfaces of the WZ/ZB/WZ structure. This confinement leads to a novel type of transition across a ZB flat plate barrier. Here, we show digital tuning of the visible emission of WZ/ZB/WZ CPQWs in a GaP nanowire by changing the thickness of the ZB barrier. The energy spacing between the sharp emission lines is uniform and is defined by the addition of single ZB monolayers. The controlled growth of identical quantum wells with atomically flat interfaces at predefined positions featuring digitally tunable discrete emission energies may provide a new route to further advance entangled photons in solid state quantum systems.
Mott-insulating phases and magnetism of fermions in a double-well optical lattice
International Nuclear Information System (INIS)
Wang, Xin; Zhou, Qi; Das Sarma, S.
2011-01-01
We theoretically investigate, using nonperturbative strong correlation techniques, Mott-insulating phases and magnetic ordering of two-component fermions in a two-dimensional double-well optical lattice. At filling of two fermions per site, there are two types of Mott insulators, one of which is characterized by spin-1 antiferromagnetism below the Neel temperature. The superexchange interaction in this system is induced by the interplay between the interband interaction and the spin degree of freedom. A great advantage of the double-well optical lattice is that the magnetic quantum phase diagram and the Neel temperature can be easily controlled by tuning the orbital energy splitting of the two-level system. Particularly, the Neel temperature can be one order of magnitude larger than that in standard optical lattices, facilitating the experimental search for magnetic ordering in optical lattice systems.
Exciton trapping in interface defects/quantum dots in narrow quantum wells: magnetic-field effects
International Nuclear Information System (INIS)
Barticevic, Z.; Pacheco, M.; Duque, C.A.; Oliveira, L.E.
2003-01-01
The effects of applied magnetic fields on excitons trapped in quantum dots/interface defects in narrow GaAs/Ga 1-x Al x As quantum wells are studied within the effective-mass approximation. The magnetic fields are applied in the growth direction of the quantum wells, and exciton trapping is modeled through a quantum dot formed by monolayer fluctuations in the z-direction, together with lateral confinement via a truncated or infinite parabolic potential in the exciton in-plane coordinate. Theoretical results are found in overall agreement with available experimental measurements
Feshbach shape resonance for high Tc pairing in superlattices of quantum stripes and quantum wells
Directory of Open Access Journals (Sweden)
A Bianconi
2006-09-01
Full Text Available The Feshbach shape resonances in the interband pairing in superconducting superlattices of quantum wells or quantum stripes is shown to provide the mechanism for high Tc superconductivity. This mechanism provides the Tc amplification driven by the architecture of material: superlattices of quantum wells (intercalated graphite or diborides and superlattices of quantum stripes (doped high Tc cuprate perovskites where the chemical potential is tuned to a Van Hove-Lifshitz singularity (vHs in the electronic energy spectrum of the superlattice associated with the change of the Fermi surface dimensionality in one of the subbands.
Quantum well electronic states in a tilted magnetic field.
Trallero-Giner, C; Padilha, J X; Lopez-Richard, V; Marques, G E; Castelano, L K
2017-08-16
We report the energy spectrum and the eigenstates of conduction and uncoupled valence bands of a quantum well under the influence of a tilted magnetic field. In the framework of the envelope approximation, we implement two analytical approaches to obtain the nontrivial solutions of the tilted magnetic field: (a) the Bubnov-Galerkin spectral method and b) the perturbation theory. We discuss the validity of each method for a broad range of magnetic field intensity and orientation as well as quantum well thickness. By estimating the accuracy of the perturbation method, we provide explicit analytical solutions for quantum wells in a tilted magnetic field configuration that can be employed to study several quantitative phenomena.
Wei, Hai-Rui; Deng, Fu-Guo
2013-07-29
We investigate the possibility of achieving scalable photonic quantum computing by the giant optical circular birefringence induced by a quantum-dot spin in a double-sided optical microcavity as a result of cavity quantum electrodynamics. We construct a deterministic controlled-not gate on two photonic qubits by two single-photon input-output processes and the readout on an electron-medium spin confined in an optical resonant microcavity. This idea could be applied to multi-qubit gates on photonic qubits and we give the quantum circuit for a three-photon Toffoli gate. High fidelities and high efficiencies could be achieved when the side leakage to the cavity loss rate is low. It is worth pointing out that our devices work in both the strong and the weak coupling regimes.
Quantum wave packet revival in two-dimensional circular quantum wells with position-dependent mass
Energy Technology Data Exchange (ETDEWEB)
Schmidt, Alexandre G.M. [Departamento de Ciencias Exatas, Polo Universitario de Volta Redonda-Universidade Federal Fluminense, Av. dos Trabalhadores 420, Volta Redonda RJ, CEP 27255-125 (Brazil)], E-mail: agmschmidt@gmail.com; Azeredo, Abel D. [Departamento de Fisica-Universidade Federal de Roraima, Av. Cap. Ene Garcez 2413, Boa Vista RR, CEP 69304-000 (Brazil)], E-mail: aazeredo@gmail.com; Gusso, A. [Departamento de Ciencias Exatas e Tecnologicas-Universidade Estadual de Santa Cruz, km 16 Rodovia Ilheus-Itabuna, Ilheus BA, CEP 45662-000 (Brazil)], E-mail: agusso@uesc.br
2008-04-14
We study quantum wave packet revivals on two-dimensional infinite circular quantum wells (CQWs) and circular quantum dots with position-dependent mass (PDM) envisaging a possible experimental realization. We consider CQWs with radially varying mass, addressing particularly the cases where M(r){proportional_to}r{sup w} with w=1,2, or -2. The two PDM Hamiltonians currently allowed by theory were analyzed and we were able to construct a strong theoretical argument favoring one of them.
Quantum wave packet revival in two-dimensional circular quantum wells with position-dependent mass
International Nuclear Information System (INIS)
Schmidt, Alexandre G.M.; Azeredo, Abel D.; Gusso, A.
2008-01-01
We study quantum wave packet revivals on two-dimensional infinite circular quantum wells (CQWs) and circular quantum dots with position-dependent mass (PDM) envisaging a possible experimental realization. We consider CQWs with radially varying mass, addressing particularly the cases where M(r)∝r w with w=1,2, or -2. The two PDM Hamiltonians currently allowed by theory were analyzed and we were able to construct a strong theoretical argument favoring one of them
Nanostructure van der Waals interaction between a quantum well and a quantum dot atom
International Nuclear Information System (INIS)
Horing, Norman J Morgenstern
2006-01-01
We examine the van der Waals interaction between mobile plasma electrons in a narrow quantum well nanostructure and a quantum dot atom. This formulation of the van der Waals interaction exhibits it to second order as the correlation energy (self-energy) of the dot-atom electrons mediated by the image potential arising from the dynamic, nonlocal and spatially inhomogeneous polarization of the quantum well plasma electrons. This image potential of the quantum-well plasma is, in turn, determined by the dynamic, nonlocal, inhomogeneous screening function of the quantum well, which involves the space-time matrix inversion of its spatially inhomogeneous, nonlocal and time-dependent dielectric function. The latter matrix inversion is carried out exactly, in closed form, and the van der Waals energy is evaluated in the electrostatic limit to dipole-dipole terms
Quantum-correlated two-photon transitions to excitons in semiconductor quantum wells.
Salazar, L J; Guzmán, D A; Rodríguez, F J; Quiroga, L
2012-02-13
The dependence of the excitonic two-photon absorption on the quantum correlations (entanglement) of exciting biphotons by a semiconductor quantum well is studied. We show that entangled photon absorption can display very unusual features depending on space-time-polarization biphoton parameters and absorber density of states for both bound exciton states as well as for unbound electron-hole pairs. We report on the connection between biphoton entanglement, as quantified by the Schmidt number, and absorption by a semiconductor quantum well. Comparison between frequency-anti-correlated, unentangled and frequency-correlated biphoton absorption is addressed. We found that exciton oscillator strengths are highly increased when photons arrive almost simultaneously in an entangled state. Two-photon-absorption becomes a highly sensitive probe of photon quantum correlations when narrow semiconductor quantum wells are used as two-photon absorbers.
Coherent excitonic nonlinearity versus inhomogeneous broadening in single quantum wells
DEFF Research Database (Denmark)
Langbein, Wolfgang Werner; Borri, Paola; Hvam, Jørn Märcher
1998-01-01
The coherent response of excitons in semiconductor nanostructures, as measured in four wave mixing (FWM) experiments, depends strongly on the inhomogeneous broadening of the exciton transition. We investigate GaAs-AlGaAs single quantum wells (SQW) of 4 nm to 25 nm well width. Two main mechanisms...
Stark-like electron transfer between quantum wells
International Nuclear Information System (INIS)
Dubovis, S.A.; Voronko, A.N.; Basharov, A.M.
2008-01-01
The Stark-like mechanism of electron transfer between two energy subband localized in remote quantum wells is examined theoretically. Estimations of major parameters of the problem in case of delta-function-wells model are adduced. Schematic model allowing experimental study of Stark-like transfer is proposed
Pumped double quantum dot with spin-orbit coupling
Directory of Open Access Journals (Sweden)
Sherman Eugene
2011-01-01
Full Text Available Abstract We study driven by an external electric field quantum orbital and spin dynamics of electron in a one-dimensional double quantum dot with spin-orbit coupling. Two types of external perturbation are considered: a periodic field at the Zeeman frequency and a single half-period pulse. Spin-orbit coupling leads to a nontrivial evolution in the spin and orbital channels and to a strongly spin- dependent probability density distribution. Both the interdot tunneling and the driven motion contribute into the spin evolution. These results can be important for the design of the spin manipulation schemes in semiconductor nanostructures. PACS numbers: 73.63.Kv,72.25.Dc,72.25.Pn
Ground state of the parallel double quantum dot system.
Zitko, Rok; Mravlje, Jernej; Haule, Kristjan
2012-02-10
We resolve the controversy regarding the ground state of the parallel double quantum dot system near half filling. The numerical renormalization group predicts an underscreened Kondo state with residual spin-1/2 magnetic moment, ln2 residual impurity entropy, and unitary conductance, while the Bethe ansatz solution predicts a fully screened impurity, regular Fermi-liquid ground state, and zero conductance. We calculate the impurity entropy of the system as a function of the temperature using the hybridization-expansion continuous-time quantum Monte Carlo technique, which is a numerically exact stochastic method, and find excellent agreement with the numerical renormalization group results. We show that the origin of the unconventional behavior in this model is the odd-symmetry "dark state" on the dots.
Charge sensing of a few-donor double quantum dot in silicon
Energy Technology Data Exchange (ETDEWEB)
Watson, T. F., E-mail: tfwatson15@gmail.com; Weber, B.; Büch, H.; Fuechsle, M.; Simmons, M. Y., E-mail: michelle.simmons@unsw.edu.au [Australian Research Council Centre of Excellence for Quantum Computation and Communication Technology, University of New South Wales, Sydney, New South Wales 2052 (Australia)
2015-12-07
We demonstrate the charge sensing of a few-donor double quantum dot precision placed with atomic resolution scanning tunnelling microscope lithography. We show that a tunnel-coupled single electron transistor (SET) can be used to detect electron transitions on both dots as well as inter-dot transitions. We demonstrate that we can control the tunnel times of the second dot to the SET island by ∼4 orders of magnitude by detuning its energy with respect to the first dot.
A double well interferometer on an atom chip
DEFF Research Database (Denmark)
Schumm, Thorsten; Krüger, Peter; Hofferberth, S.
2006-01-01
Radio-Frequency coupling between magnetically trapped atomic states allows to create versatile adiabatic dressed state potentials for neutral atom manipulation. Most notably, a single magnetic trap can be split into a double well by controlling amplitude and frequency of an oscillating magnetic...... split BECs in time of flight expansion, we realize a matter wave interferometer. The observed interference pattern exhibits a stable relative phase of the two condensates, clearly indicating a coherent splitting process. Furthermore, we measure and control the deterministic phase evolution throughout...
Toric codes and quantum doubles from two-body Hamiltonians
Energy Technology Data Exchange (ETDEWEB)
Brell, Courtney G; Bartlett, Stephen D; Doherty, Andrew C [Centre for Engineered Quantum Systems, School of Physics, University of Sydney, Sydney (Australia); Flammia, Steven T, E-mail: cbrell@physics.usyd.edu.au [Perimeter Institute for Theoretical Physics, Waterloo (Canada)
2011-05-15
We present here a procedure to obtain the Hamiltonians of the toric code and Kitaev quantum double models as the low-energy limits of entirely two-body Hamiltonians. Our construction makes use of a new type of perturbation gadget based on error-detecting subsystem codes. The procedure is motivated by a projected entangled pair states (PEPS) description of the target models, and reproduces the target models' behavior using only couplings that are natural in terms of the original Hamiltonians. This allows our construction to capture the symmetries of the target models.
Detection of electromagnetic radiation using micromechanical multiple quantum wells structures
Datskos, Panagiotis G [Knoxville, TN; Rajic, Slobodan [Knoxville, TN; Datskou, Irene [Knoxville, TN
2007-07-17
An apparatus and method for detecting electromagnetic radiation employs a deflectable micromechanical apparatus incorporating multiple quantum wells structures. When photons strike the quantum-well structure, physical stresses are created within the sensor, similar to a "bimetallic effect." The stresses cause the sensor to bend. The extent of deflection of the sensor can be measured through any of a variety of conventional means to provide a measurement of the photons striking the sensor. A large number of such sensors can be arranged in a two-dimensional array to provide imaging capability.
Photo-Induced Spin Dynamics in Semiconductor Quantum Wells.
Miah, M Idrish
2009-01-17
We experimentally investigate the dynamics of spins in GaAs quantum wells under applied electric bias by photoluminescence (PL) measurements excited with circularly polarized light. The bias-dependent circular polarization of PL (P(PL)) with and without magnetic field is studied. The P(PL) without magnetic field is found to be decayed with an enhancement of increasing the strength of the negative bias. However, P(PL) in a transverse magnetic field shows oscillations under an electric bias, indicating that the precession of electron spin occurs in quantum wells. The results are discussed based on the electron-hole exchange interaction in the electric field.
Photo-Induced Spin Dynamics in Semiconductor Quantum Wells
Directory of Open Access Journals (Sweden)
Miah M
2009-01-01
Full Text Available Abstract We experimentally investigate the dynamics of spins in GaAs quantum wells under applied electric bias by photoluminescence (PL measurements excited with circularly polarized light. The bias-dependent circular polarization of PL (P PL with and without magnetic field is studied. TheP PLwithout magnetic field is found to be decayed with an enhancement of increasing the strength of the negative bias. However,P PLin a transverse magnetic field shows oscillations under an electric bias, indicating that the precession of electron spin occurs in quantum wells. The results are discussed based on the electron–hole exchange interaction in the electric field.
Optical manifestation of magnetoexcitons in near-surface quantum wells
Energy Technology Data Exchange (ETDEWEB)
Flores-Desirena, B.; Perez-Rodriguez, F
2003-05-15
The optical response of excitons in quantum wells, close to the sample boundary and under the action of a strong magnetic field perpendicular to their plane, is investigated theoretically. Solving the system of coupled equations for the coherent electron-hole interband amplitude and the electromagnetic field, reflectivity spectra for such nanostructures are calculated. The effect of the interaction of magnetoexcitons with the sample surface on the resonance structure of reflectivity spectra is analyzed. These optical spectra are also affected by the phase change of the electromagnetic wave as it propagates in the cap layer, overlying the quantum well.
DEFF Research Database (Denmark)
Birkedal, Dan; Shah, Jagdeep; Shchegrov, Andrei V.
2000-01-01
Resonant Rayleigh scattering from quantum well excitons is investigated using ultrafast spectral interferometry. We isolate the coherent Rayleigh scattering from incoherent luminescence in a single speckle. Averaging the resonant Rayleigh intensity over several speckles allows us to identify...... features in support of quantum corrections to the classical description of the underlying scattering process....
Spin transport dynamics of excitons in CdTe/Cd1-xMnxTe quantum wells
International Nuclear Information System (INIS)
Kayanuma, Kentaro; Shirado, Eiji; Debnath, Mukul C.; Souma, Izuru; Chen, Zhanghai; Oka, Yasuo
2001-01-01
Transport properties of spin-polarized excitons were studied in the double quantum well system composed of Cd 0.95 Mn 0.05 Te and CdTe wells. Circular polarization degrees of the time resolved exciton photoluminescence in magnetic field showed that the spin-polarized excitons diffused from the magnetic quantum well and injected to the non-magnetic quantum well by conserving their spins. The spin-polarized excitons injected into the nonmagnetic well reaches 18% of the nonmagnetic well excitons. From the circular polarization degree and the lifetime of the magnetic quantum well excitons, the spin relaxation time of the excitons in the Cd 0.95 Mn 0.05 Te well was determined as 275 - 10 ps depending on the magnetic field strength. [copyright] 2001 American Institute of Physics
Exact quantum solutions for some asymmetrical two-well potentials
International Nuclear Information System (INIS)
Ley-Koo, E.
1985-01-01
We discuss several points of interest in the study of two-well potentials in quantum mechanics courses. In particular, we construct the solutions of the Schroedinger equation for rectangular-well, harmonic-oscillator and triangular-well potentials with a delta-function potential superimposed in different positions. The energy spectra and eigenfunctions of such systems are presented and analyzed for different intensities and positions of the delta-function potential. (author)
Bandgap Engineering of 1300 nm Quantum Dots/Quantum Well Nanostructures Based Devices
Alhashim, Hala H.
2016-05-29
The main objectives of this thesis are to develop viable process and/or device technologies for bandgap tuning of 1300-nm InGaAs/GaAs quantum-dot (QD) laser structures, and broad linewidth 1300-nm InGaAsP/InP quantum well (QW) superluminescent diode structures. The high performance bandgap-engineered QD laser structures were achieved by employing quantum-dot intermixing (QDI) based on impurity free vacancy diffusion (IFVD) technique for eventual seamless active-passive integration, and bandgap-tuned lasers. QDI using various dielectric-capping materials, such as HfO2, SrTiO3, TiO2, Al2O3 and ZnO, etc, were experimented in which the resultant emission wavelength can be blueshifted to ∼ 1100 nm ─ 1200 nm range depending on process conditions. The significant results extracted from the PL characterization were used to perform an extensive laser characterization. The InAs/GaAs quantum-dot lasers with QDs transition energies were blueshifted by ~185 nm, and lasing around ~1070 – 1190 nm was achieved. Furthermore, from the spectral analysis, a simultaneous five-state lasing in the InAs/InGaAs intermixed QD laser was experimentally demonstrated for the first time in the very important wavelength range from 1030 to 1125 nm. The QDI methodology enabled the facile formation of a plethora of devices with various emission wavelengths suitable for a wide range of applications in the infrared. In addition, the wavelength range achieved is also applicable for coherent light generation in the green – yellow – orange visible wavelength band via frequency doubling, which is a cost-effective way of producing compact devices for pico-projectors, semiconductor laser based solid state lighting, etc. [1, 2] In QW-based superluminescent diode, the problem statement lies on achieving a flat-top and ultra-wide emission bandwidth. The approach was to design an inhomogeneous active region with a comparable simultaneous emission from different transition states in the QW stacks, in
Anisotropy and Suppression of Spin-Orbit Interaction in a GaAs Double Quantum Dot
Hofmann, A.; Maisi, V. F.; Krähenmann, T.; Reichl, C.; Wegscheider, W.; Ensslin, K.; Ihn, T.
2017-10-01
The spin-flip tunneling rates are measured in GaAs-based double quantum dots by time-resolved charge detection. Such processes occur in the Pauli spin blockade regime with two electrons occupying the double quantum dot. Ways are presented for tuning the spin-flip tunneling rate, which on the one hand gives access to measuring the Rashba and Dresselhaus spin-orbit coefficients. On the other hand, they make it possible to turn on and off the effect of spin-orbit interaction with a high on/off ratio. The tuning is accomplished by choosing the alignment of the tunneling direction with respect to the crystallographic axes, as well as by choosing the orientation of the external magnetic field with respect to the spin-orbit magnetic field. Spin lifetimes of 10 s are achieved at a tunneling rate close to 1 kHz.
Anisotropy and Suppression of Spin-Orbit Interaction in a GaAs Double Quantum Dot.
Hofmann, A; Maisi, V F; Krähenmann, T; Reichl, C; Wegscheider, W; Ensslin, K; Ihn, T
2017-10-27
The spin-flip tunneling rates are measured in GaAs-based double quantum dots by time-resolved charge detection. Such processes occur in the Pauli spin blockade regime with two electrons occupying the double quantum dot. Ways are presented for tuning the spin-flip tunneling rate, which on the one hand gives access to measuring the Rashba and Dresselhaus spin-orbit coefficients. On the other hand, they make it possible to turn on and off the effect of spin-orbit interaction with a high on/off ratio. The tuning is accomplished by choosing the alignment of the tunneling direction with respect to the crystallographic axes, as well as by choosing the orientation of the external magnetic field with respect to the spin-orbit magnetic field. Spin lifetimes of 10 s are achieved at a tunneling rate close to 1 kHz.
Electrically Induced Two-Photon Transparency in Semiconductor Quantum Wells
International Nuclear Information System (INIS)
Hayat, Alex; Nevet, Amir; Orenstein, Meir
2009-01-01
We demonstrate experimentally two-photon transparency, achieved by current injection into a semiconductor quantum-well structure which exhibits two-photon emission. The two-photon induced luminescence is progressively reduced by the injected current, reaching the point of two-photon transparency - a necessary condition for semiconductor two-photon gain and lasing. These results agree with our calculations.
Comment on 'Local responsivity in quantum well photodetectors'
International Nuclear Information System (INIS)
Ryzhii, M.; Khmyrova, I.
2001-01-01
The response of multiple quantum well (QW) infrared photodetectors (QW) to the photoexcitation of one QW selected from many identical QWs was recently modeled [M. Ershov, J. Appl. Phys. 86, 7059 (1999)]. We point out here that the presented analysis based on the use of drift-diffusion model for a system with a few electrons is incorrect. [copyright] 2001 American Institute of Physics
Semiconductor-Metal transition in a quantum well
International Nuclear Information System (INIS)
Nithiananthi, P.; Jayakumar, K.
2007-01-01
We demonstrate semiconductor-metal transition through diamagnetic susceptibility of a donor in a GaAs/Al x Ga 1- x As quantum well for both infinite and finite barrier models. We have also considered the non-parabolicity of the conduction band in our calculation. Our results agree with the earlier theoretical result and also with the recent experimental result
Controlled high-fidelity navigation in the charge stability diagram of a double quantum dot
International Nuclear Information System (INIS)
Coden, Diego S Acosta; Romero, Rodolfo H; Räsänen, Esa
2015-01-01
We propose an efficient control protocol for charge transfer in a double quantum dot. We consider numerically a two-dimensional model system, where the quantum dots are subjected to time-dependent electric fields corresponding to experimental gate voltages. Our protocol enables navigation in the charge stability diagram from a state to another through controllable variation of the fields. We show that the well-known adiabatic Landau–Zener transition—when supplemented with a time-dependent field tailored with optimal control theory—can remarkably improve the transition speed. The results also lead to a simple control scheme obtained from the experimental charge stability diagram that requires only a single parameter. Eventually, we can achieve the ultrafast performance of the composite pulse protocol that allows the system to be driven at the quantum speed limit. (paper)
Dynamics of double-well Bose–Einstein condensates subject to external Gaussian white noise
International Nuclear Information System (INIS)
Zheng Hanlei; Hao Yajiang; Gu Qiang
2013-01-01
Dynamical properties of the Bose–Einstein condensate in a double-well potential subject to Gaussian white noise are investigated by numerically solving the time-dependent Gross–Pitaevskii equation. The Gaussian white noise is used to describe influence of the random environmental disturbance on the double-well condensate. Dynamical evolutions from three different initial states, the Josephson oscillation state, the running phase and π-mode macroscopic quantum self-trapping states, are considered. It is shown that the system is rather robust with respect to the weak noise whose strength is small and change rate is high. If the evolution time is sufficiently long, the weak noise will finally drive the system to evolve from high-energy states to low-energy states, but in a manner rather different from the energy-dissipation effect. In the presence of strong noise with either large strength or slow change rate, the double-well condensate may exhibit very irregular dynamical behaviours. (paper)
Corrugated Quantum Well Infrared Photodetector Focal Plane Array Test Results
Goldberg, A.; Choi, K. K.; Das, N. C.; La, A.; Jhabvala, M.
1999-01-01
The corrugated quantum-well infrared photodetector (C-QWIP) uses total internal reflection to couple normal incident light into the optically active quantum wells. The coupling efficiency has been shown to be relatively independent of the pixel size and wavelength thus making the C-QWIP a candidate for detectors over the entire infrared spectrum. The broadband coupling efficiency of the C-QWIP makes it an ideal candidate for multiwavelength detectors. We fabricated and tested C-QWIP focal plane arrays (FPAs) with cutoff wavelengths of 11.2 and 16.2 micrometers. Each FPA has 256 x 256 pixels that are bump-bonded to a direct injection readout circuit. Both FPAs provided infrared imagery with good aesthetic attributes. For the 11.2-micrometers FPA, background-limited performance (BLIP) was observed at 60 K with f/3 optics. For the 16.2-micrometers FPA, BLIP was observed at 38 K. Besides the reduction of dark current in C-QWIP structures, the measured internal quantum efficiency (eta) remains to be high. The values for responsivity and quantum efficiency obtained from the FPA results agree well with those measured for single devices.
Design rules for modulation doped AlAs quantum wells
Chung, Yoon Jang; Baldwin, K. W.; West, K. W.; Kamburov, D.; Shayegan, M.; Pfeiffer, L. N.
AlxGa1-xAs/AlAs/AlxGa1-xAs quantum wells were grown with various barrier compositions ranging from x =0.26 to x =0.8. We investigate the modulation doping characteristics of the samples by magneto-transport measurements. The carrier concentration in the well peaks near the barrier alloy fraction of x =0.26 in the dark and near x =0.38 after illumination with a red LED. This behavior is consistent with the results in a separate study for AlxGa1-xAs/GaAs/AlxGa1-xAs quantum wells in the range of x =0.26 to x =1.0. We show from a charge transfer model that the calculated energy difference between the conduction band offset at the well interface and the donor energy level, ΔEC-ED, coincides for the two types of wells. This implies that, despite the differing positions of the conduction band minimum for the GaAs and AlAs wells, the doping of either well is governed by the electronic properties of the barrier. Based on this knowledge we designed high quality AlAs quantum wells with low (1 x 1011 cm-2) and high (3 x 1011 cm-2) density, and the magneto-transport data show clear signals of the fractional quantum Hall effect (2/3, 3/5, 4/7 for low density and 5/3, 8/5 for high density). Work supported by the NSF (Grants DMR-1305691, ECCS-1508925, and MRSEC DMR-1420541), the DOE Basic Energy Sciences (Grant DE-FG02-00-ER45841), the Gordon and Betty Moore Foundation (Grant GBMF4420), and the Keck Foundation.
Energy Technology Data Exchange (ETDEWEB)
Madani, A.; Schmidt, O. G. [Institute for Integrative Nanosciences, IFW Dresden, Helmholtzstr. 20, 01069 Dresden (Germany); Material Systems for Nanoelectronics, Chemnitz University of Technology, Reichenhainer Str. 70, 09107 Chemnitz (Germany); Bolaños Quiñones, V. A.; Ma, L. B., E-mail: l.ma@ifw-dresden.de; Jorgensen, M. R. [Institute for Integrative Nanosciences, IFW Dresden, Helmholtzstr. 20, 01069 Dresden (Germany); Miao, S. D. [Anhui Key Lab of Controllable Chemical Reaction and Material Chemical Engineering, School of Chemical Engineering, Hefei University of Technology, Tunxi Road. 193, Hefei, Anhui 230009 (China)
2016-04-25
Spatially and temporally overlapping double potential wells are realized in a hybrid optical microtube cavity due to the coexistence of an aggregate of luminescent quantum dots embedded in the tube wall and the cone-shaped tube's geometry. The double potential wells produce two independent sets of optical modes with different sets of mode numbers, indicating phase velocity separation for the modes overlapping at the same frequency. The overlapping mode position can be tuned by modifying the tube cavity, where these mode sets shift with different magnitudes, allowing for a vernier-scale-like tuning effect.
International Nuclear Information System (INIS)
Madani, A.; Schmidt, O. G.; Bolaños Quiñones, V. A.; Ma, L. B.; Jorgensen, M. R.; Miao, S. D.
2016-01-01
Spatially and temporally overlapping double potential wells are realized in a hybrid optical microtube cavity due to the coexistence of an aggregate of luminescent quantum dots embedded in the tube wall and the cone-shaped tube's geometry. The double potential wells produce two independent sets of optical modes with different sets of mode numbers, indicating phase velocity separation for the modes overlapping at the same frequency. The overlapping mode position can be tuned by modifying the tube cavity, where these mode sets shift with different magnitudes, allowing for a vernier-scale-like tuning effect.
Energy Technology Data Exchange (ETDEWEB)
Rogge, Maximilian Christoph
2008-12-03
This thesis describes the fabrication of different lateral single, double and triple quantum dots as well as the investigation of these devices with electronic transport. Based on GaAs/AlGaAs heterostructures, the fabrication was carried out using optical lithography and lithography with a scanning electron microscope and an atomic force microscope. The latter ones were also used in combination. Aside from basic effects like Coulomb blockade the analysis of single quantum dots particularly yielded results by charge detection and magneto transport. With charge detection using quantum point contacts conclusions were attained concerning tunneling rates and the extension of wave functions. In a magnetic field the influence of the electronic spin is important aside from aspects concerning the Fock-Darwin spectrum. Analyses were performed on Zeeman effect, spin pairing, spin blockade and Kondo effect. The combination of spin blockade and Kondo effect allows statements concerning the spin configuration, which depends on the electron number. With double quantum dots of different geometries the two mechanisms of capacitive coupling and tunnel coupling were analyzed. They were found in spectra of ground and excited states. With gate voltage and magnetic field it was possible to freely vary character and strength of coupling. With capacitive coupling, spin blockade was investigated again. The analysis of coupling effects was performed using transport and charge measurements. Aside from results on tunneling rates the latter one allows to detect molecular states. Concerning triple quantum dots the three dimensional stability diagram was analyzed. The free variation of energies of all three dots was achieved. The evolution of resonances was observed with transport and charge detection. With a starlike device geometry it was possible to perform two-path measurements. They provide a new measurand, the distinguishability of double and triple dot physics. (orig.)
Interaction of a quantum well with squeezed light: Quantum-statistical properties
International Nuclear Information System (INIS)
Sete, Eyob A.; Eleuch, H.
2010-01-01
We investigate the quantum statistical properties of the light emitted by a quantum well interacting with squeezed light from a degenerate subthreshold optical parametric oscillator. We obtain analytical solutions for the pertinent quantum Langevin equations in the strong-coupling and low-excitation regimes. Using these solutions we calculate the intensity spectrum, autocorrelation function, and quadrature squeezing for the fluorescent light. We show that the fluorescent light exhibits bunching and quadrature squeezing. We also show that the squeezed light leads to narrowing of the width of the spectrum of the fluorescent light.
Mach-Zehnder interferometry with interacting Bose-Einstein condensates in a double-well potential
International Nuclear Information System (INIS)
Berrada, T.
2014-01-01
Mach-Zehnder interferometry with interacting Bose-Einstein condensates in a double-well potential Particle-wave duality has enabled the construction of interferometers for massive particles such as electrons, neutrons, atoms or molecules. Implementing atom interferometry has required the development of analogues to the optical beam-splitters, phase shifters or recombiners to enable the coherent, i.e. phase-preserving manipulation of quantum superpositions. While initially demonstrating the wave nature of particles, atom interferometers have evolved into some of the most advanced devices for precision measurement, both for technological applications and tests of the fundamental laws of nature. Bose- Einstein condensates (BEC) of ultracold atoms are particular matter waves: they exhibit a collective many-body wave function and macroscopic coherence properties. As such, they have often been considered as an analogue to optical laser elds and it is natural to wonder whether BECs can provide to atom interferometry a similar boost as the laser brought to optical interferometry. One fundamental dierence between atomic BECs and lasers elds is the presence of atomic interactions, yielding an intrinsic non-linearity. On one hand, interactions can lead to eects destroying the phase coherence and limiting the interrogation time of trapped BEC interferometers. On the other hand, they can be used to generate nonclassical (e.g. squeezed) states to improve the sensitivity of interferometric measurements beyond the standard quantum limit (SQL). In this thesis, we present the realization of a full Mach-Zehnder interferometric sequence with trapped, interacting BECs con ned on an atom chip. Our interferometer relies on the coherent manipulation of a BEC in a magnetic double-well potential. For this purpose, we developed a novel type of matter-wave recombiner, an element which so far was missing in BEC atom optics. We have been able to exploit interactions to generate a squeezed
Weak antilocalization and spin precession in quantum wells
Knap, W.; Skierbiszewski, C.; Zduniak, A.; Litwin-Staszewska, E.; Bertho, D.; Kobbi, F.; Robert, J. L.; Pikus, G. E.; Pikus, F. G.; Iordanskii, S. V.; Mosser, V.; Zekentes, K.; Lyanda-Geller, Yu. B.
1996-02-01
The results of magnetoconductivity measurements in GaxIn1-xAs quantum wells are presented. The observed magnetoconductivity appears due to the quantum interference, which lead to the weak localization effect. It is established that the details of the weak localization are controlled by the spin splitting of electron spectra. A theory is developed that takes into account both linear and cubic in electron wave-vector terms in spin splitting, which arise due to the lack of inversion center in the crystal, as well as the linear terms that appear when the well itself is asymmetric. It is established that, unlike spin-relaxation rate, contributions of different terms into magnetoconductivity are not additive. It is demonstrated that in the interval of electron densities under investigation [(0.98-1.85)×1012 cm-2 ] all three contributions are comparable and have to be taken into account to achieve a good agreement between the theory and experiment. The results obtained from comparison of the experiment and the theory have allowed us to determine what mechanisms dominate the spin-relaxation in quantum wells and to improve the accuracy of determination of spin-splitting parameters in A3B5 crystals and two-dimensional structures.
Interpretation of quantum mechanics by the double solution theory
International Nuclear Information System (INIS)
Broglie, L. de.
1987-01-01
English translation of one of Louis de Broglie's latest articles, as a kind of gift to all physicists abroad who are not well acquainted with the double solution theory, or do not read French. Our readers will appreciate the deep physical insight expressed in this tentative theory of wave-particle dualism, a major problem unsolved to everyone's satisfaction
Electron Raman scattering in a HgS/CdS spherical quantum dot quantum well
International Nuclear Information System (INIS)
Zhong Qinghu; Lai Liping
2013-01-01
Electron Raman scattering (ERS) is investigated in a spherical HgS/CdS quantum dot quantum well (QDQW). The differential cross section (DCS) is calculated as a function of the scattering frequency and the sizes of QDQW. Single parabolic conduction and valence bands are assumed. The selection rules for the processes are studied. Singularities in the spectra are found and interpreted. The ERS studied here can be used to provide direct information about the electron band structure of these systems. (semiconductor physics)
Impurity-induced tuning of quantum-well States in spin-dependent resonant tunneling.
Kalitsov, Alan; Coho, A; Kioussis, Nicholas; Vedyayev, Anatoly; Chshiev, M; Granovsky, A
2004-07-23
We report exact model calculations of the spin-dependent tunneling in double magnetic tunnel junctions in the presence of impurities in the well. We show that the impurity can tune selectively the spin channels giving rise to a wide variety of interesting and novel transport phenomena. The tunneling magnetoresistance, the spin polarization, and the local current can be dramatically enhanced or suppressed by impurities. The underlying mechanism is the impurity-induced shift of the quantum well states (QWSs), which depends on the impurity potential, impurity position, and the symmetry of the QWS. Copyright 2004 The American Physical Society
Perturbative quantum gravity as a double copy of gauge theory.
Bern, Zvi; Carrasco, John Joseph M; Johansson, Henrik
2010-08-06
In a previous paper we observed that (classical) tree-level gauge-theory amplitudes can be rearranged to display a duality between color and kinematics. Once this is imposed, gravity amplitudes are obtained using two copies of gauge-theory diagram numerators. Here we conjecture that this duality persists to all quantum loop orders and can thus be used to obtain multiloop gravity amplitudes easily from gauge-theory ones. As a nontrivial test, we show that the three-loop four-point amplitude of N=4 super-Yang-Mills theory can be arranged into a form satisfying the duality, and by taking double copies of the diagram numerators we obtain the corresponding amplitude of N=8 supergravity. We also remark on a nonsupersymmetric two-loop test based on pure Yang-Mills theory resulting in gravity coupled to an antisymmetric tensor and dilaton.
Twisted quantum double model of topological order with boundaries
Bullivant, Alex; Hu, Yuting; Wan, Yidun
2017-10-01
We generalize the twisted quantum double model of topological orders in two dimensions to the case with boundaries by systematically constructing the boundary Hamiltonians. Given the bulk Hamiltonian defined by a gauge group G and a 3-cocycle in the third cohomology group of G over U (1 ) , a boundary Hamiltonian can be defined by a subgroup K of G and a 2-cochain in the second cochain group of K over U (1 ) . The consistency between the bulk and boundary Hamiltonians is dictated by what we call the Frobenius condition that constrains the 2-cochain given the 3-cocyle. We offer a closed-form formula computing the ground-state degeneracy of the model on a cylinder in terms of the input data only, which can be naturally generalized to surfaces with more boundaries. We also explicitly write down the ground-state wave function of the model on a disk also in terms of the input data only.
Transient Dynamics of Double Quantum Dots Coupled to Two Reservoirs
Fukadai, Takahisa; Sasamoto, Tomohiro
2018-05-01
We study the time-dependent properties of double quantum dots coupled to two reservoirs using the nonequilibrium Green function method. For an arbitrary time-dependent bias, we derive an expression for the time-dependent electron density of a dot and several currents, including the current between the dots in the wide-band-limit approximation. For the special case of a constant bias, we calculate the electron density and the currents numerically. As a result, we find that these quantities oscillate and that the number of crests in a single period of the current from a dot changes with the bias voltage. We also obtain an analytical expression for the relaxation time, which expresses how fast the system converges to its steady state. From the expression, we find that the relaxation time becomes constant when the coupling strength between the dots is sufficiently large in comparison with the difference of coupling strength between the dots and the reservoirs.
Double Rashba Quantum Dots Ring as a Spin Filter
Directory of Open Access Journals (Sweden)
Chi Feng
2008-01-01
Full Text Available AbstractWe theoretically propose a double quantum dots (QDs ring to filter the electron spin that works due to the Rashba spin–orbit interaction (RSOI existing inside the QDs, the spin-dependent inter-dot tunneling coupling and the magnetic flux penetrating through the ring. By varying the RSOI-induced phase factor, the magnetic flux and the strength of the spin-dependent inter-dot tunneling coupling, which arises from a constant magnetic field applied on the tunneling junction between the QDs, a 100% spin-polarized conductance can be obtained. We show that both the spin orientations and the magnitude of it can be controlled by adjusting the above-mentioned parameters. The spin filtering effect is robust even in the presence of strong intra-dot Coulomb interactions and arbitrary dot-lead coupling configurations.
Dynamics of spins in semiconductor quantum wells under drift
International Nuclear Information System (INIS)
Idrish Miah, M.
2009-01-01
The dynamics of spins in semiconductor quantum wells under applied electric bias has been investigated by photoluminescence (PL) spectroscopy. The bias-dependent polarization of PL (P PL ) was measured at different temperatures. The P PL was found to decay with an enhancement of increasing the strength of the negative bias, with an exception occurred for a low value of the negative bias. The P PL was also found to depend on the temperature. The P PL in the presence of a transverse magnetic field was also studied. The results showed that P PL in the magnetic field oscillates under an applied bias, demonstrating that the dephasing of electron spin occurs during the drift transport in semiconductor quantum wells.
Dynamics of spins in semiconductor quantum wells under drift
Energy Technology Data Exchange (ETDEWEB)
Idrish Miah, M., E-mail: m.miah@griffith.edu.a [Nanoscale Science and Technology Centre, Griffith University, Nathan, Brisbane, QLD 4111 (Australia); School of Biomolecular and Physical Sciences, Griffith University, Nathan, Brisbane, QLD 4111 (Australia); Department of Physics, University of Chittagong, Chittagong 4331 (Bangladesh)
2009-09-15
The dynamics of spins in semiconductor quantum wells under applied electric bias has been investigated by photoluminescence (PL) spectroscopy. The bias-dependent polarization of PL (P{sub PL}) was measured at different temperatures. The P{sub PL} was found to decay with an enhancement of increasing the strength of the negative bias, with an exception occurred for a low value of the negative bias. The P{sub PL} was also found to depend on the temperature. The P{sub PL} in the presence of a transverse magnetic field was also studied. The results showed that P{sub PL} in the magnetic field oscillates under an applied bias, demonstrating that the dephasing of electron spin occurs during the drift transport in semiconductor quantum wells.
High mobility and quantum well transistors design and TCAD simulation
Hellings, Geert
2013-01-01
For many decades, the semiconductor industry has miniaturized transistors, delivering increased computing power to consumers at decreased cost. However, mere transistor downsizing does no longer provide the same improvements. One interesting option to further improve transistor characteristics is to use high mobility materials such as germanium and III-V materials. However, transistors have to be redesigned in order to fully benefit from these alternative materials. High Mobility and Quantum Well Transistors: Design and TCAD Simulation investigates planar bulk Germanium pFET technology in chapters 2-4, focusing on both the fabrication of such a technology and on the process and electrical TCAD simulation. Furthermore, this book shows that Quantum Well based transistors can leverage the benefits of these alternative materials, since they confine the charge carriers to the high-mobility material using a heterostructure. The design and fabrication of one particular transistor structure - the SiGe Implant-Free Qu...
Ferroelectric tunnel junctions with multi-quantum well structures
Energy Technology Data Exchange (ETDEWEB)
Ma, Zhijun; Zhang, Tianjin, E-mail: zhangtj@hubu.edu.cn [Ministry of Education Key Laboratory for the Green Preparation and Application of Functional Materials, Hubei University, Wuhan 430062 (China); Hubei Collaborative Innovation Center for Advanced Organic Chemical Materials, Hubei University, Wuhan 430062 (China); Liang, Kun; Qi, Yajun; Wang, Duofa; Wang, Jinzhao; Jiang, Juan [Hubei Collaborative Innovation Center for Advanced Organic Chemical Materials, Hubei University, Wuhan 430062 (China)
2014-06-02
Ferroelectric tunnel junctions (FTJs) with multi-quantum well structures are proposed and the tunneling electroresistance (TER) effect is investigated theoretically. Compared with conventional FTJs with monolayer ferroelectric barriers, FTJs with single-well structures provide TER ratio improvements of one order of magnitude, while FTJs with optimized multi-well structures can enhance this improvement by another order of magnitude. It is believed that the increased resonant tunneling strength combined with appropriate asymmetry in these FTJs contributes to the improvement. These studies may help to fabricate FTJs with large TER ratio experimentally and put them into practice.
Surface states in thin versus thick organic quantum wells
International Nuclear Information System (INIS)
Nguyen Ba An; Hanamura, E.
1995-08-01
Surface states are studied in dependence on thickness or organic quantum wells within the nearest layer approximation. It is shown that there is a material-dependent critical thickness. Structures, that have thickness thinner or thicker than the critical one, exhibit qualitatively different characteristics of surface states. Criteria for existence and sign rules for location of energy levels of surface states are established which are general and contain the results of the previous works as particular cases. (author). 18 refs, 3 figs
Excitonic effects in the luminescence of quantum wells
International Nuclear Information System (INIS)
Deveaud, B.; Kappei, L.; Berney, J.; Morier-Genoud, F.; Portella-Oberli, M.T.; Szczytko, J.; Piermarocchi, C.
2005-01-01
We report on the origin of the excitonic luminescence in quantum wells. This study is carried out by time-resolved photoluminescence experiments performed on a very high-quality InGaAs quantum well sample in which the photoluminescence contributions at the energy of the exciton and at the band edge can be clearly separated and traced over a broad range of times and densities. This allows us to compare the two conflicting theoretical approaches to the question of the origin of the excitonic luminescence in quantum wells: the model of the exciton population and the model of the Coulomb correlated plasma. We measure the exciton formation time and we show the fast exciton formation and its dependence with carrier density. We are also able to give the boundaries of the Mott transition in our system, and to show the absence of observable renormalization of the gap below the onset of this transition. We detail the characteristics of the trion formation and evidence the possible formation of both positive and negative trions in the absence of any resident free carrier populations
Oxide double quantum dot - an answer to the qubit problem?
Yarlagadda, Sudhakar; Dey, Amit
We propose that oxide-based double quantum dots with only one electron (tunnelling between the dots) can be regarded as a qubit with little decoherence; these dots can possibly meet future challenges of miniaturization. The tunnelling of the eg electron between the dots and the attraction between the electron and the hole on adjacent dots can be modelled as an anisotropic Heisenberg interaction between two spins with the total z-component of the spins being zero. We study two anisotropically interacting spins coupled to optical phonons; we restrict our analysis to the regime of strong coupling to the environment, to the antiadiabatic region, and to the subspace with zero value for SzT (the z-component of the total spin). In the case where each spin is coupled to a different phonon bath, we assume that the system and the environment are initially uncorrelated (and form a simply separable state) in the polaronic frame of reference. By analyzing the polaron dynamics through a non-Markovian quantum master equation, we find that the system manifests a small amount of decoherence that decreases both with increasing nonadiabaticity and with enhancing strength of coupling g. Recently I got an invitation to visit Argonne National Lab from Jan./2106 to end of March/2016. I thought I would give a talk at APS March meeting. Please accept the submission.
Wei, Hai-Rui; Deng, Fu-Guo
2014-12-18
Quantum logic gates are the key elements in quantum computing. Here we investigate the possibility of achieving a scalable and compact quantum computing based on stationary electron-spin qubits, by using the giant optical circular birefringence induced by quantum-dot spins in double-sided optical microcavities as a result of cavity quantum electrodynamics. We design the compact quantum circuits for implementing universal and deterministic quantum gates for electron-spin systems, including the two-qubit CNOT gate and the three-qubit Toffoli gate. They are compact and economic, and they do not require additional electron-spin qubits. Moreover, our devices have good scalability and are attractive as they both are based on solid-state quantum systems and the qubits are stationary. They are feasible with the current experimental technology, and both high fidelity and high efficiency can be achieved when the ratio of the side leakage to the cavity decay is low.
Optimal control of universal quantum gates in a double quantum dot
Castelano, Leonardo K.; de Lima, Emanuel F.; Madureira, Justino R.; Degani, Marcos H.; Maialle, Marcelo Z.
2018-06-01
We theoretically investigate electron spin operations driven by applied electric fields in a semiconductor double quantum dot (DQD) formed in a nanowire with longitudinal potential modulated by local gating. We develop a model that describes the process of loading and unloading the DQD taking into account the overlap between the electron wave function and the leads. Such a model considers the spatial occupation and the spin Pauli blockade in a time-dependent fashion due to the highly mixed states driven by the external electric field. Moreover, we present a road map based on the quantum optimal control theory (QOCT) to find a specific electric field that performs two-qubit quantum gates on a faster timescale and with higher possible fidelity. By employing the QOCT, we demonstrate the possibility of performing within high efficiency a universal set of quantum gates {cnot, H, and T } , where cnot is the controlled-not gate, H is the Hadamard gate, and T is the π /8 gate, even in the presence of the loading/unloading process and charge noise effects. Furthermore, by varying the intensity of the applied magnetic field B , the optimized fidelity of the gates oscillates with a period inversely proportional to the gate operation time tf. This behavior can be useful to attain higher fidelity for fast gate operations (>1 GHz) by appropriately choosing B and tf to produce a maximum of the oscillation.
Sayer, Ryan; Maries, Alexandru; Singh, Chandralekha
2017-01-01
Learning quantum mechanics is challenging, even for upper-level undergraduate and graduate students. Research-validated interactive tutorials that build on students' prior knowledge can be useful tools to enhance student learning. We have been investigating student difficulties with quantum mechanics pertaining to the double-slit experiment in…
Electron-electron interaction in Multiple Quantum Wells
Zybert, M.; Marchewka, M.; Tomaka, G.; Sheregii, E. M.
2012-07-01
The complex investigation of the magneto-transport effects in structures containing multiple quantum well (MQWs) based on the GaAs/AlGaAs-heterostructures has been performed. The MQWs investigated have different electron densities in QWs. The parameters of 2DEG in MQWs were determined from the data of the Integer Quantum Hall Effect (IQHE) and Shubnikov-de Haas oscillations (SdH) observed at low temperatures (0.6-4.2 K). The method of calculation of the electron states energies in MQWs has been developed which is based on the splitting of these states due to the exchange interaction (SAS-splitting, see D. Płoch et al., Phys. Rev. B 79 (2009) 195434) including the screening of this interaction. The IQHE and SdH observed in these multilayer structures with the third degree of freedom for electrons are interpreted from this.
Suppressing Nonradiative Recombination in Crown-Shaped Quantum Wells
Energy Technology Data Exchange (ETDEWEB)
Park, Kwangwook [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Ju, Gunwu [Gwangju Institute of Science and Technology; Korea Institute of Science and Technology; Na, Byung Hoon [Samsung Advanced Institute of Technology; Hwang, Hyeong-Yong [Gwangju Institute of Science and Technology; Jho, Young-Dahl [Gwangju Institute of Science and Technology; Myoung, NoSoung [Gwangju Institute of Science and Technology; Yim, Sang-Youp [Gwangju Institute of Science and Technology; Kim, Hyung-jun [Korea Institute of Science and Technology; Lee, Yong Tak [Gwangju Institute of Science and Technology
2018-02-06
We examined the structural and optical properties of a crown-shaped quantum well (CSQW) to suppress nonradiative recombination. To reduce carrier loss in defect traps at the well/barrier interface, the CSQW was designed to concentrate carriers in the central region by tailoring the bandgap energy. Temperature-dependent photoluminescence measurements showed that the CSQW had a high activation energy and low potential fluctuation. In addition, the long carrier lifetime of the CSQW at high temperatures can be interpreted as indicating a decrease in carrier loss at defect traps.
Anti-Stokes Luminescence in High Quality Quantum Wells
Vinattieri, A.; Bogani, F.; Miotto, A.; Ceccherini, S.
1997-11-01
We present a detailed investigation of the anti-Stokes (AS) luminescence which originates from exciton recombination when below gap excitation is used, in a set of high quality quantum well structures. We observe strong excitonic resonances in the AS signal as measured from photoluminescence and photoluminescence excitation spectra. We demonstrate that neither the electromagnetic coupling between the wells nor the morphological disorder can explain this up-conversion effect. Time-resolved luminescence data after ps excitation and fs correlation spectroscopy results provide clear evidence of the occurrence of a two-step absorption which is assisted by the exciton population resonantly excited by the first photon.
Recent Developments in Quantum-Well Infrared Photodetectors
Gunapala, S. D.; Bandara, K. M. S. V.
1995-01-01
Intrinsic infrared (IR) detectors in the long wavelength range (8-20 Am) are based on an optically excited interband transition, which promotes an electron across the band gap (E(sub g)) from the valence band to the conduction band as shown. These photoelectrons can be collected efficiently, thereby producing a photocurrent in the external circuit. Since the incoming photon has to promote an electron from the valence band to the conduction band, the energy of the photon (h(sub upsilon)) must be higher than the E(sub g) of the photosensitive material. Therefore, the spectral response of the detectors can be controlled by controlling the E(sub g) of the photosensitive material. Examples for such materials are Hg(1-x), Cd(x), Te, and Pb(1-x), Sn(x), Te, in which the energy gap can be controlled by varying x. This means detection of very-long-wavelength IR radiation up to 20 microns requires small band gaps down to 62 meV. It is well known that these low band gap materials, characterized by weak bonding and low melting points, are more difficult to grow and process than large-band gap semiconductors such as GaAs. These difficulties motivate the exploration of utilizing the intersub-band transitions in multiquantum well (MQW) structures made of more refractory large-band gap semiconductors. The idea of using MQW structures to detect IR radiation can be explained by using the basic principles of quantum mechanics. The quantum well is equivalent to the well-known particle in a box problem in quantum mechanics, which can be solved by the time independent Schroudiner equation.
Matter-wave interferometry in a double well on an atom chip
DEFF Research Database (Denmark)
Schumm, Thorsten; Hofferberth, S.; Andersson, L. M.
2005-01-01
Matter-wave interference experiments enable us to study matter at its most basic, quantum level and form the basis of high-precision sensors for applications such as inertial and gravitational field sensing. Success in both of these pursuits requires the development of atom-optical elements...... that can manipulate matter waves at the same time as preserving their coherence and phase. Here, we present an integrated interferometer based on a simple, coherent matter-wave beam splitter constructed on an atom chip. Through the use of radio-frequency-induced adiabatic double-well potentials, we...... demonstrate the splitting of Bose-Einstein condensates into two clouds separated by distances ranging from 3 to 80 μm, enabling access to both tunnelling and isolated regimes. Moreover, by analysing the interference patterns formed by combining two clouds of ultracold atoms originating from a single...
Interplay of coupling and superradiant emission in the optical response of a double quantum dot
Sitek, Anna; Machnikowski, Paweł
2009-09-01
We study theoretically the optical response of a double quantum dot structure to an ultrafast optical excitation. We show that the interplay of a specific type of coupling between the dots and their collective interaction with the radiative environment leads to very characteristic features in the time-resolved luminescence as well as in the absorption spectrum of the system. For a sufficiently strong coupling, these effects survive even if the transition energy mismatch between the two dots exceeds by far the emission linewidth.
Liu, Yang; Gao, Bo; Gong, Min; Shi, Ruiying
2017-06-01
The influence of a GaN layer as a sub-quantum well for an AlGaN/GaN/AlGaN double barrier resonant tunneling diode (RTD) on device performance has been investigated by means of numerical simulation. The introduction of the GaN layer as the sub-quantum well turns the dominant transport mechanism of RTD from the 3D-2D model to the 2D-2D model and increases the energy difference between tunneling energy levels. It can also lower the effective height of the emitter barrier. Consequently, the peak current and peak-to-valley current difference of RTD have been increased. The optimal GaN sub-quantum well parameters are found through analyzing the electrical performance, energy band, and transmission coefficient of RTD with different widths and depths of the GaN sub-quantum well. The most pronounced electrical parameters, a peak current density of 5800 KA/cm2, a peak-to-valley current difference of 1.466 A, and a peak-to-valley current ratio of 6.35, could be achieved by designing RTD with the active region structure of GaN/Al0.2Ga0.8 N/GaN/Al0.2Ga0.8 N (3 nm/1.5 nm/1.5 nm/1.5 nm).
Theoretical study of excitonic complexes in semiconductors quantum wells
International Nuclear Information System (INIS)
Dacal, Luis Carlos Ogando
2001-08-01
A physical system where indistinguishable particles interact with each other creates the possibility of studying correlation and exchange effect. The simplest system is that one with only two indistinguishable particles. In condensed matter physics, these complexes are represented by charged excitons, donors and acceptors. In quantum wells, the valence band is not parabolic, therefore, the negatively charged excitons and donors are theoretically described in a simpler way. Despite the fact that the stability of charged excitons (trions) is known since the late 50s, the first experimental observation occurred only at the early 90s in quantum well samples, where their binding energies are one order of magnitude larger due to the one dimensional carriers confinement. After this, these complexes became the subject of an intense research because the intrinsic screening of electrical interactions in semiconductor materials allows that magnetic fields that are usual in laboratories have strong effects on the trion binding energy. Another rich possibility is the study of trions as an intermediate state between the neutral exciton and the Fermi edge singularity when the excess of doping carriers is increased. In this thesis, we present a theoretical study of charged excitons and negatively charged donors in GaAs/Al 0.3 Ga 0.7 As quantum wells considering the effects of external electric and magnetic fields. We use a simple, accurate and physically clear method to describe these systems in contrast with the few and complex treatments s available in the literature. Our results show that the QW interface defects have an important role in the trion dynamics. This is in agreement with some experimental works, but it disagrees with other ones. (author)
Oscillations of quantum transport through double-AB rings with magnetic impurity
International Nuclear Information System (INIS)
Gao Yingfang; Liang, J-Q
2006-01-01
We have studied the effect of impurity scattering on the quantum transport through double AB rings in the presence of spin-flipper in the middle lead in terms of one-dimensional quantum waveguide theory. The electron interacts with the impurity through the exchange interaction leading to spin-flip scattering. Transmissions in the spin-flipped and non-spin-flipped channels are calculated explicitly. It is found that the overall transmission and the conductance are distorted due to the impurity scattering. The extent of distortion not only depends on the strength of the impurity potential but also on the impurity position. Moreover, the transmission probability and the conductance are modulated by the magnetic flux, the size of the ring and the impurity potential strength as well
Electronic structures of GaAs/AlxGa1-xAs quantum double rings
Directory of Open Access Journals (Sweden)
Li Shu-Shen
2006-01-01
Full Text Available AbstractIn the framework of effective mass envelope function theory, the electronic structures of GaAs/AlxGa1-xAs quantum double rings (QDRs are studied. Our model can be used to calculate the electronic structures of quantum wells, wires, dots, and the single ring. In calculations, the effects due to the different effective masses of electrons and holes in GaAs and AlxGa1-xAs and the valence band mixing are considered. The energy levels of electrons and holes are calculated for different shapes of QDRs. The calculated results are useful in designing and fabricating the interrelated photoelectric devices. The single electron states presented here are useful for the study of the electron correlations and the effects of magnetic fields in QDRs.
Dynamical entanglement formation and dissipation effects in two double quantum dots
Energy Technology Data Exchange (ETDEWEB)
Contreras-Pulido, L D [Centro de Investigacion CientIfica y de Educacion Superior de Ensenada, Apartado Postal 2732, Ensenada, BC 22860 (Mexico); Rojas, F [Departamento de Fisica Teorica, Centro de Ciencias de la Materia Condensada, Universidad Nacional Autonoma de Mexico, Ensenada, Baja California 22800 (Mexico)
2006-11-01
We study the static and dynamic formation of entanglement in charge states of a two double quantum dot array with two mobile electrons under the effect of an external driving field. We include dissipation via contact with a phonon bath. By using the density matrix formalism and an open quantum system approach, we describe the dynamical behaviour of the charge distribution (polarization), concurrence (measure of the degree of entanglement) and Bell state probabilities (two qubit states with maximum entanglement) of such a system, including the role of dot asymmetry and temperature effects. Our results show that it is possible to obtain entangled states as well as a most probable Bell state, which can be controlled by the driving field. We also evaluate how the entanglement formation based on charge states deteriorates as the temperature or asymmetry increases.
Ordered Dissipative Structures in Exciton Systems in Semiconductor Quantum Wells
Directory of Open Access Journals (Sweden)
Andrey A. Chernyuk
2006-02-01
Full Text Available A phenomenological theory of exciton condensation in conditions of inhomogeneous excitation is proposed. The theory is applied to the study of the development of an exciton luminescence ring and the ring fragmentation at macroscopical distances from the central excitation spot in coupled quantum wells. The transition between the fragmented and the continuous ring is considered. With assumption of a defect in the structure, a possibility of a localized island of the condensed phase in a fixed position is shown. Exciton density distribution is also analyzed in the case of two spatially separated spots of the laser excitation.
Photoluminescence efficiency in AlGaN quantum wells
Energy Technology Data Exchange (ETDEWEB)
Tamulaitis, G.; Mickevičius, J. [Institute of Applied Research and Semiconductor Physics Department, Vilnius University, Sauletekio av. 9-III, Vilnius LT-10222 (Lithuania); Jurkevičius, J., E-mail: jonas.jurkevicius@ff.vu.lt [Institute of Applied Research and Semiconductor Physics Department, Vilnius University, Sauletekio av. 9-III, Vilnius LT-10222 (Lithuania); Shur, M.S. [Department of ECE and CIE, Rensselaer Polytechnic Institute (United States); Shatalov, M.; Yang, J.; Gaska, R. [Sensor Electronic Technology, Inc. (United States)
2014-11-15
Photoluminescence spectroscopy of AlGaN/AlGaN multiple quantum wells under quasi-steady-state conditions in the temperature range from 8 to 300 K revealed a strong dependence of droop onset threshold on temperature that was explained by the influence of carrier delocalization. The delocalization at room temperature results predominantly in enhancement of bimolecular radiative recombination, while being favorable for enhancement of nonradiative recombination at low temperatures. Studies of stimulated emission confirmed the strong influence of carrier localization on droop.
Ionization of deep quantum wells: Optical trampoline effect
Perlin, E. Yu.; Levitskiĭ, R. S.
2007-02-01
A new mechanism of transitions of an electronic system from the ground state to states with excitation energies exceeding many times the energy of a light photon initiating the transitions has been considered. This mechanism is based on the so-called optical “trampoline” effect: one of the interacting electrons receives energy from another electron and, simultaneously absorbing a photon ħω, overcomes the energy gap significantly exceeding ħω. Ionization of deep quantum wells by low-frequency light of moderate intensity due to the optical trampoline effect was calculated.
Quantum-well-driven magnetism in thin films
DEFF Research Database (Denmark)
Mirbt, S.; Johansson, B.; Skriver, Hans Lomholt
1996-01-01
We have performed local spin-density calculations for an fee (100) Ag substrate covered by 1 to 16 monolayers (ML) of Pd. We find that thin films of Pd are magnetic with a moment of the order of 0.3 mu(B) except for films of 1-2 ML and 5-7 ML where magnetism is completely suppressed. We present...... a physically transparent explanation of this behavior in terms of the Stoner picture and magnetic quantum-well states....
Magneto-gyrotropic photogalvanic effects in semiconductor quantum wells
International Nuclear Information System (INIS)
Bel'kov, V V; Ganichev, S D; Ivchenko, E L; Tarasenko, S A; Weber, W; Giglberger, S; Olteanu, M; Tranitz, H-P; Danilov, S N; Schneider, Petra; Wegscheider, W; Weiss, D; Prettl, W
2005-01-01
We show that free-carrier (Drude) absorption of both polarized and unpolarized terahertz radiation in quantum well (QW) structures causes an electric photocurrent in the presence of an in-plane magnetic field. Experimental and theoretical analysis evidences that the observed photocurrents are spin dependent and related to the gyrotropy of the QWs. Microscopic models for the photogalvanic effects in QWs based on asymmetry of photoexcitation and relaxation processes are proposed. In most of the investigated structures the observed magneto-induced photocurrents are caused by spin-dependent relaxation of non-equilibrium carriers
PbSe Quantum Well VECSEL on Si
Fill, M.; Khiar, A.; Rahim, M.; Felder, F.; Zogg, H.
2011-12-01
Vertical external cavity surface emitting lasers in the wavelength region from 3-5 μm are presented. They are based on PbSe quantum wells grown on Si substrates. As host material Pb1-xEuxSe and Pb1-xSrxSe are used. With Pb1-xSrxSe as host material maximum operation temperatures of 325 K are achieved, while with Pb1-xEuxSe an operation temperature of 245 K could not be overcome. This may be explained by a band alignment transition from type I to type II with increasing temperature.
International Nuclear Information System (INIS)
Afsaneh, E.; Yavari, H.
2014-01-01
The superconducting reservoir effect on the current carrying transport of a double quantum dot in Markovian regime is investigated. For this purpose, a quantum master equation at finite temperature is derived for the many-body density matrix of an open quantum system. The dynamics and the steady-state properties of the double quantum dot system for arbitrary bias are studied. We will show that how the populations and coherencies of the system states are affected by superconducting leads. The energy parameter of system contains essentially four contributions due to dots system-electrodes coupling, intra dot coupling, two quantum dots inter coupling and superconducting gap. The coupling effect of each energy contribution is applied to currents and coherencies results. In addition, the effect of energy gap is studied by considering the amplitude and lifetime of coherencies to get more current through the system. (author)
InGaAs/GaAs quantum-dot-quantum-well heterostructure formed by submonolayer deposition
DEFF Research Database (Denmark)
Xu, Zhangcheng; Leosson, K.; Birkedal, Dan
2003-01-01
-dot-quantum-well (QDQW) structure, by using high power PL and selective PL with excitation energies below the band gap of the GaAs barriers and temperature dependent PL. As the temperature is increased from 10 to 300 K, a narrowing of the full width at half-maximum at intermediate temperatures and a sigmoidal behaviour......Discrete emission lines from self-assembled InGaAs quantum dots (QDs) grown in the submonolayer (SML) deposition mode have been observed in micro-photoluminescence (PL) spectra at 10 K. For the first time, the SML-grown InGaAs/GaAs QD heterostructure is verified to be a quantum...
Indium antimonide quantum well structures for electronic device applications
Edirisooriya, Madhavie
The electron effective mass is smaller in InSb than in any other III-V semiconductor. Since the electron mobility depends inversely on the effective mass, InSb-based devices are attractive for field effect transistors, magnetic field sensors, ballistic transport devices, and other applications where the performance depends on a high mobility or a long mean free path. In addition, electrons in InSb have a large g-factor and strong spin orbit coupling, which makes them well suited for certain spin transport devices. The first n-channel InSb high electron mobility transistor (HEMT) was produced in 2005 with a power-delay product superior to HEMTs with a channel made from any other III-V semiconductor. The high electron mobility in the InSb quantum-well channel increases the switching speed and lowers the required supply voltage. This dissertation focuses on several materials challenges that can further increase the appeal of InSb quantum wells for transistors and other electronic device applications. First, the electron mobility in InSb quantum wells, which is the highest for any semiconductor quantum well, can be further increased by reducing scattering by crystal defects. InSb-based heteroepitaxy is usually performed on semi-insulating GaAs (001) substrates due to the lack of a lattice matched semi-insulating substrate. The 14.6% mismatch between the lattice parameters of GaAs and InSb results in the formation of structural defects such as threading dislocations and microtwins which degrade the electrical and optical properties of InSb-based devices. Chapter 1 reviews the methods and procedures for growing InSb-based heterostructures by molecular beam epitaxy. Chapters 2 and 3 introduce techniques for minimizing the crystalline defects in InSb-based structures grown on GaAs substrates. Chapter 2 discusses a method of reducing threading dislocations by incorporating AlyIn1-ySb interlayers in an AlxIn1-xSb buffer layer and the reduction of microtwin defects by growth
Cascade Type-I Quantum Well GaSb-Based Diode Lasers
Directory of Open Access Journals (Sweden)
Leon Shterengas
2016-05-01
Full Text Available Cascade pumping of type-I quantum well gain sections was utilized to increase output power and efficiency of GaSb-based diode lasers operating in a spectral region from 1.9 to 3.3 μm. Carrier recycling between quantum well gain stages was realized using band-to-band tunneling in GaSb/AlSb/InAs heterostructure complemented with optimized electron and hole injector regions. Coated devices with an ~100-μm-wide aperture and a 3-mm-long cavity demonstrated continuous wave (CW output power of 1.96 W near 2 μm, 980 mW near 3 μm, 500 mW near 3.18 μm, and 360 mW near 3.25 μm at 17–20 °C—a nearly or more than twofold increase compared to previous state-of-the-art diode lasers. The utilization of the different quantum wells in the cascade laser heterostructure was demonstrated to yield wide gain lasers, as often desired for tunable laser spectroscopy. Double-step etching was utilized to minimize both the internal optical loss and the lateral current spreading penalties in narrow-ridge lasers. Narrow-ridge cascade diode lasers operate in a CW regime with ~100 mW of output power near and above 3 μm and above 150 mW near 2 μm.
Multiple-path Quantum Interference Effects in a Double-Aharonov-Bohm Interferometer
Directory of Open Access Journals (Sweden)
Yang XF
2010-01-01
Full Text Available Abstract We investigate quantum interference effects in a double-Aharonov-Bohm (AB interferometer consisting of five quantum dots sandwiched between two metallic electrodes in the case of symmetric dot-electrode couplings by the use of the Green’s function equation of motion method. The analytical expression for the linear conductance at zero temperature is derived to interpret numerical results. A three-peak structure in the linear conductance spectrum may evolve into a double-peak structure, and two Fano dips (zero conductance points may appear in the quantum system when the energy levels of quantum dots in arms are not aligned with one another. The AB oscillation for the magnetic flux threading the double-AB interferometer is also investigated in this paper. Our results show the period of AB oscillation can be converted from 2π to π by controlling the difference of the magnetic fluxes threading the two quantum rings.
Size-dependent electronic eigenstates of multilayer organic quantum wells
International Nuclear Information System (INIS)
Nguyen Ba An; Hanamura, E.
1995-09-01
A detailed theoretical treatment is given eigenfunctions and eigenenergies of a multilayer organic quantum well sandwiched between two different dielectric media. The abrupt change of dielectric constants at the interfaces distorts the wave function and results in possible surface states in addition to propagating states. The proper boundary conditions are accounted for by the method of image charges. Analytic criteria for existence of surface states are established using the nearest layers approximation, which depend not only on the intralayer parameters but also on the number of layers. The size dependence together with the dependence on signs and relative magnitudes of the structure parameters fully determine the energy spectrum of propagating states as well as the number and the location of surface states. (author). 28 refs, 10 figs, 2 tabs
Barrier penetration effects on thermopower in semiconductor quantum wells
International Nuclear Information System (INIS)
Vaidya, R. G.; Sankeshwar, N. S.; Mulimani, B. G.
2014-01-01
Finite confinement effects, due to the penetration of the electron wavefunction into the barriers of a square well potential, on the low–temperature acoustic-phonon-limited thermopower (TP) of 2DEG are investigated. The 2DEG is considered to be scattered by acoustic phonons via screened deformation potential and piezoelectric couplings. Incorporating the barrier penetration effects, the dependences of diffusion TP and phonon drag TP on barrier height are studied. An expression for phonon drag TP is obtained. Numerical calculations of temperature dependences of mobility and TP for a 10 nm InN/In x Ga 1−x N quantum well for different values of x show that the magnitude and behavior of TP are altered. A decrease in the barrier height from 500 meV by a factor of 5, enhances the mobility by 34% and reduces the TP by 58% at 20 K. Results are compared with those of infinite barrier approximation
Capacitance-voltage characteristics of quantum well structures
Moon, C R; Choe, B D
1999-01-01
The characteristics of the apparent carrier distribution (ACD) of quantum well (QW) structures are investigated using the self-consistent simulation and the capacitance-voltage (C-V) profiling techniques. The simulation results on the differential carrier distribution show that the change of position expectation value of two-dimensional electrons determines the full width at half maximum of 100 K ACD peaks when conduction band offset is DELTA E sub c = 160 meV and the QW width t sub w is greater than 120 A. The contribution of Debye averaging effects to the ACD peaks becomes important as t sub w and DELTA E sub c values decrease and the temperature is increased. The influence of Debye averaging effects on ACD peaks appears differently according to the location of each well in multiple QWs. These results indicate that the extraction of QW parameters from the C-V profile should be done with caution.
Kohl, M.; Heitmann, D.; Grambow, P.; Ploog, K.
1988-06-01
Periodic multiple-quantum-well wires have been prepared by etching five-layer quantum-well structures through a holographically prepared mask. The periodicity was 380 nm, the lateral confinement 180 nm, and the quantum-well width 13, nm. The luminescence from these microstructured systems in the frequency regime of the one-electron-one-heavy-hole transition was strongly polarized with the electric field perpendicular to the periodic structure. This effect was caused by the resonantly enhanced emission of quantum-well-exciton (QWE) polaritons. Excitation of QWE polaritons was also observed in reflection measurements on the microstructured samples.
Leon, R.; Swift, G. M.; Magness, B.; Taylor, W. A.; Tang, Y. S.; Wang, K. L.; Dowd, P.; Zhang, Y. H.
2000-01-01
The photoluminescence emission from InGaAs/GaAs quantum-well and quantum-dot (QD) structures are compared after controlled irradiation with 1.5 MeV proton fluxes. Results presented here show a significant enhancement in radiation tolerance with three-dimensional quantum confinement.
Directory of Open Access Journals (Sweden)
Pengqin Shi
2016-09-01
Full Text Available Based on the time-nonlocal particle number-resolved master equation, we investigate the sequential electron transport through the interacting double quantum dots. Our calculations show that there exists the effect of energy renormalization in the dispersion of the bath interaction spectrum and it is sensitive to the the bandwidth of the bath. This effect would strongly affect the stationary current and its zero-frequency shot noise for weak inter-dot coherent coupling strength, but for strong inter-dot coupling regime, it is negligible due to the strong intrinsic Rabi coherent dynamics. Moreover, the possible observable effects of the energy renormalization in the noise spectrum are also investigated through the Rabi coherence signal. Finally, the non-Markovian effect is manifested in the finite-frequency noise spectrum with the appearance of quasisteps, and the magnitude of these quasisteps are modified by the dispersion function.
Nonadiabatic quantum state control of many bosons in few wells
DEFF Research Database (Denmark)
Tichy, Malte C.; Kock Pedersen, Mads; Mølmer, Klaus
2013-01-01
We present a fast scheme for arbitrary unitary control of interacting bosonic atoms in a double well. Assuming fixed interwell tunneling rate and intrawell interaction strength, we control the many-atom state by a discrete sequence of shifts of the single-well energies. For strong interactions......, resonant tunneling transitions implement beam-splitter U(2) rotations among atom number eigenstates, which can be combined and, thus, permit full controllability. By numerically optimizing such sequences of couplings at avoided level crossings, we extend the realm of full controllability to a wide range...... of realistic interaction parameters, while we remain in the simple control space. We demonstrate the efficiency and the high achievable fidelity of our proposal with nonadiabatic population transfer, NOON-state creation, a cnot gate, and a transistorlike, conditional evolution of several atoms....
Crystal orientation effects on wurtzite quantum well electromechanical fields
DEFF Research Database (Denmark)
Duggen, Lars; Willatzen, Morten
2010-01-01
in the literature for semiconductors, is inaccurate for ZnO/MgZnO heterostructures where shear-strain components play an important role. An interesting observation is that a growth direction apart from [1̅ 21̅ 0] exists for which the electric field in the quantum well region becomes zero. This is important for, e......A one-dimensional continuum model for calculating strain and electric field in wurtzite semiconductor heterostructures with arbitrary crystal orientation is presented and applied to GaN/AlGaN and ZnO/MgZnO heterostructure combinations. The model is self-consistent involving feedback couplings...... of spontaneous polarization, strain, and electric field. Significant differences between fully coupled and semicoupled models are found for the longitudinal and shear-strain components as a function of the crystal-growth direction. In particular, we find that the semicoupled model, typically used...
Color center lasers passively mode locked by quantum wells
International Nuclear Information System (INIS)
Islam, M.N.; Soccolich, C.E.; Bar-Joseph, I.; Sauer, N.; Chang, T.Y.; Miller, B.I.
1989-01-01
This paper describes how, using multiple quantum well (MQW) saturable absorbers, the authors passively mode locked a NaCl color center laser to produce 275 fs transform-limited, pedestal-free pulses with as high as 3.7 kW peak power. The pulses are tunable from λ = 1.59 to 1.7 μm by choosing MQW's with different bandgaps. They shortened the output pulses from the laser to 25 fs using the technique of soliton compression in a fiber. The steady-state operation of the laser requires the combination of a fast saturable absorber and gain saturation. In addition to the NaCl laser, they passively mode locked a Tl 0 (1):KCl color center laser and produced -- 22 ps pulses. Although the 275 fs pulses from the NaCl laser are Gaussian, when broadened, the pulses acquire an asymmetric spectrum because of carrier-induced refractive index changes
Modeling of anisotropic properties of double quantum rings by the terahertz laser field.
Baghramyan, Henrikh M; Barseghyan, Manuk G; Kirakosyan, Albert A; Ojeda, Judith H; Bragard, Jean; Laroze, David
2018-04-18
The rendering of different shapes of just a single sample of a concentric double quantum ring is demonstrated realizable with a terahertz laser field, that in turn, allows the manipulation of electronic and optical properties of a sample. It is shown that by changing the intensity or frequency of laser field, one can come to a new set of degenerated levels in double quantum rings and switch the charge distribution between the rings. In addition, depending on the direction of an additional static electric field, the linear and quadratic quantum confined Stark effects are observed. The absorption spectrum shifts and the additive absorption coefficient variations affected by laser and electric fields are discussed. Finally, anisotropic electronic and optical properties of isotropic concentric double quantum rings are modeled with the help of terahertz laser field.
Strong quantum-confined stark effect in germanium quantum-well structures on silicon
International Nuclear Information System (INIS)
Kuo, Y.; Lee, Y. K.; Gei, Y.; Ren, S; Roth, J. E.; Miller, D. A.; Harris, J. S.
2006-01-01
Silicon is the dominant semiconductor for electronics, but there is now a growing need to integrate such component with optoelectronics for telecommunications and computer interconnections. Silicon-based optical modulators have recently been successfully demonstrated but because the light modulation mechanisms in silicon are relatively weak, long (for example, several millimeters) devices or sophisticated high-quality-factor resonators have been necessary. Thin quantum-well structures made from III-V semiconductors such as GaAs, InP and their alloys exhibit the much stronger Quantum-Confined Stark Effect (QCSE) mechanism, which allows modulator structures with only micrometers of optical path length. Such III-V materials are unfortunately difficult to integrate with silicon electronic devices. Germanium is routinely integrated with silicon in electronics, but previous silicon-germanium structures have also not shown strong modulation effects. Here we report the discovery of the QCSE, at room temperature, in thin germanium quantum-well structures grown on silicon. The QCSE here has strengths comparable to that in III-V materials. Its clarity and strength are particularly surprising because germanium is an indirect gap semiconductor, such semiconductors often display much weak optical effects than direct gap materials (such as the III-V materials typically used for optoelectronics). This discovery is very promising for small, high-speed, low-power optical output devices fully compatible with silicon electronics manufacture. (author)
Nonlinear optical rectification in semiparabolic quantum wells with an applied electric field
International Nuclear Information System (INIS)
Karabulut, ibrahim; Safak, Haluk
2005-01-01
The optical rectification (OR) in a semiparabolic quantum well with an applied electric field has been theoretically investigated. The electronic states in a semiparabolic quantum well with an applied electric field are calculated exactly, within the envelope function and the displaced harmonic oscillator approach. Numerical results are presented for the typical Al x Ga 1- x As/GaAs quantum well. These results show that the applied electric field and the confining potential frequency of the semiparabolic quantum well have a great influence on the OR coefficient. Moreover, the OR coefficient also depends sensitively on the relaxation rate of the semiparabolic quantum well system
Bishop, Nathaniel; Young, Ralph; Borras Pinilla, Carlos; Stalford, Harold; Nielsen, Erik; Muller, Richard; Rahman, Rajib; Tracy, Lisa; Wendt, Joel; Lilly, Michael; Carroll, Malcolm
2012-02-01
We discuss trade-offs of different double quantum dot and charge sensor lay-outs using computer assisted design (CAD). We use primarily a semi-classical model, augmented with a self-consistent configuration interaction method. Although CAD for quantum dots is difficult due to uncontrolled factors (e.g., disorder), different ideal designs can still be compared. Comparisons of simulation and measured dot characteristics, such as capacitance, show that CAD can agree well with experiment for relevant cases. CAD results comparing several different designs will be discussed including a comparison to measurement results from the same designs. Trade-offs between poly-silicon and metal gate lay-outs will also be discussed. This work was performed, in part, at the Center for Integrated Nanotechnologies, a U.S. DOE, Office of Basic Energy Sciences user facility. The work was supported by the Sandia National Laboratories Directed Research and Development Program. Sandia National Laboratories is a multi-program laboratory managed and operated by Sandia Corporation, a wholly owned subsidiary of Lockheed Martin Corporation, for the U.S. Department of Energy's National Nuclear Security Administration under contract DE-AC04-94AL85000.
Hagar, Amit
Among the alternatives of non-relativistic quantum mechanics (NRQM) there are those that give different predictions than quantum mechanics in yet-untested circumstances, while remaining compatible with current empirical findings. In order to test these predictions, one must isolate one's system from environmental induced decoherence, which, on the standard view of NRQM, is the dynamical mechanism that is responsible for the 'apparent' collapse in open quantum systems. But while recent advances in condensed-matter physics may lead in the near future to experimental setups that will allow one to test the two hypotheses, namely genuine collapse vs. decoherence, hence make progress toward a solution to the quantum measurement problem, those philosophers and physicists who are advocating an information-theoretic approach to the foundations of quantum mechanics are still unwilling to acknowledge the empirical character of the issue at stake. Here I argue that in doing so they are displaying an unwarranted double standard.
Energy Technology Data Exchange (ETDEWEB)
Netzel, Carsten; Hoffmann, Veit; Wernicke, Tim; Knauer, Arne; Weyers, Markus [Ferdinand-Braun-Institut fuer Hoechstfrequenztechnik, Gustav-Kirchhoff-Strasse 4, 12489 Berlin (Germany); Kneissl, Michael [Ferdinand-Braun-Institut fuer Hoechstfrequenztechnik, Gustav-Kirchhoff-Strasse 4, 12489 Berlin (Germany); Institut fuer Festkoerperphysik, Technische Universitaet Berlin, Hardenbergstrasse 36, 10623 Berlin (Germany)
2010-07-15
To determine relevant processes affecting the internal quantum efficiency in GaInN quantum well structures, we have studied the temperature and excitation power dependent photoluminescence intensity for quantum wells with different well widths on (0001) c-plane GaN and for quantum wells on nonpolar (11-20) a-plane GaN. In thick polar quantum wells, the quantum confined Stark effect (QCSE) causes a stronger intensity decrease with increasing temperature as long as the radiative recombination dominates. At higher temperatures, when the nonradiative recombination becomes more important, thick polar quantum wells feature a lower relative intensity decrease than thinner polar or nonpolar quantum wells. Excitation power dependent photoluminescence points to a transition from a recombination of excitons to a bimolecular recombination of uncorrelated charge carriers for thick polar quantum wells in the same temperature range. This transition might contribute to the limitation of nonradiative recombination by a reduced diffusivity of charge carriers. (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)
Efficiency droop in nonpolar InGaN quantum wells
Energy Technology Data Exchange (ETDEWEB)
Schade, Lukas; Schwarz, Ulrich [Fraunhofer Institut fuer Angewandte Festkoerperphysik (IAF), Freiburg im Breisgau (Germany); Institut fuer Mikrosystemtechnik (IMTEK), Universitaet Freiburg, Freiburg im Breisgau (Germany); Wernicke, Tim; Rass, Jens; Ploch, Simon [Institut fuer Festkoerperphysik, Technische Universitaet Berlin (Germany); Weyers, Markus [Ferdinand-Braun-Institut (FBH), Berlin (Germany); Kneissl, Michael [Institut fuer Festkoerperphysik, Technische Universitaet Berlin (Germany); Ferdinand-Braun-Institut (FBH), Berlin (Germany)
2012-07-01
InGaN quantum wells (QWs) exhibit a decline of the internal efficiency at high charge carrier excitation. This has been observed for polar as well as for semipolar and nonpolar oriented QWs. Polar stands for the (0001) growth direction with strong piezoelectric fields. Due to the vanishing fields, the orthogonal growth directions (a or m) are called nonpolar, while all directions between are merged as semipolar orientations. In contrast to the polar and many semipolar QWs, nonpolar InGaN QWs provide a special property: optical polarization of the radiative transitions, which is a result of the anisotropic strain within pseudomorphic grown nonpolar QWs. Using this property, the broadened effective emission can be resolved into two fundamental transitions. They are spectrally separated by a defined energy which corresponds to the energy distance of the valence subbands. We studied nonpolar InGaN/InGaN Multi-QWs grown on low defect density GaN substrates with a setup for confocal microscopy. To reach high excitation densities of charge carriers, we use either a combination of an UV laser and highly focusing objectives or an electric pulse generator. The emission is spectrally analysed and compared to established models.
Photon induced non-linear quantized double layer charging in quaternary semiconducting quantum dots.
Nair, Vishnu; Ananthoju, Balakrishna; Mohapatra, Jeotikanta; Aslam, M
2018-03-15
Room temperature quantized double layer charging was observed in 2 nm Cu 2 ZnSnS 4 (CZTS) quantum dots. In addition to this we observed a distinct non-linearity in the quantized double layer charging arising from UV light modulation of double layer. UV light irradiation resulted in a 26% increase in the integral capacitance at the semiconductor-dielectric (CZTS-oleylamine) interface of the quantum dot without any change in its core size suggesting that the cause be photocapacitive. The increasing charge separation at the semiconductor-dielectric interface due to highly stable and mobile photogenerated carriers cause larger electrostatic forces between the quantum dot and electrolyte leading to an enhanced double layer. This idea was supported by a decrease in the differential capacitance possible due to an enhanced double layer. Furthermore the UV illumination enhanced double layer gives us an AC excitation dependent differential double layer capacitance which confirms that the charging process is non-linear. This ultimately illustrates the utility of a colloidal quantum dot-electrolyte interface as a non-linear photocapacitor. Copyright © 2017 Elsevier Inc. All rights reserved.
Quantum equivalence of a driven triple-well Van der Pol oscillator: A QTM study
International Nuclear Information System (INIS)
Chakraborty, Debdutta; Chattaraj, Pratim Kumar
2014-01-01
Highlights: • Quantum–classical correspondence is manifested at strong external coupling regime. • Suppression of classical chaos takes place in quantum domain. • Quantum chaos promotes quantum diffusion. • Quantum localisation is realised when interference effects are dominant. - Abstract: A quantum mechanical analogue of the classically chaotic triple-well oscillator under the influence of an external field and parametric excitation has been studied by using the quantum theory of motion. The on the fly calculations show the correspondence between some dynamical aspects of the classical and quantum oscillators along with a strictly quantum mechanical behaviour in case of diffusion and tunneling. Suitable external conditions have been obtained which can either assist or suppress the movement of quantum particles from one well to another. Quantum interference effects play a critical role in determining the nature of the quantum dynamics and in the presence of strong coupling to the external forces, quantum interference effects reduce drastically leading to decoherence of the quantum wave packet. In such situations, quantum dynamical features qualitatively resemble the corresponding classical dynamical behaviour and a correspondence between classical and quantum dynamics is obtained
Hybridization of electron states in a step quantum well in a magnetic field
International Nuclear Information System (INIS)
Barseghyan, M.G.; Kirakosyan, A.A.
2005-01-01
The quantum states and energy levels of an electrion in a rectangular step quantum well in a magnetic field parallel to the plane of two-dimentional electron gas are investigated. It is shown that the joint effect of the magnetic field and confining potential of the quantum well results in redical change of the electron spectrum. The dependence of the electron energy levels on the quantum well parameters, magnetic field induction and projection of the wave-vector along the magnetic field induction are calculated. Numerical calculations are carried out for a AlAs/GaAlAs/GaAs/AlAs step quantum well
Blue and green electroluminescence from CdSe nanocrystal quantum-dot-quantum-wells
International Nuclear Information System (INIS)
Lu, Y. F.; Cao, X. A.
2014-01-01
CdS/CdSe/ZnS quantum dot quantum well (QDQW) nanocrystals were synthesized using the successive ion layer adsorption and reaction technique, and their optical properties were tuned by bandgap and strain engineering. 3-monolayer (ML) CdSe QWs emitted blue photoluminescence at 467 nm with a spectral full-width-at-half-maximum of ∼30 nm. With a 3 ML ZnS cladding layer, which also acts as a passivating and strain-compensating layer, the QDQWs acquired a ∼35% quantum yield of the QW emission. Blue and green electroluminescence (EL) was obtained from QDQW light-emitting devices with 3–4.5 ML CdSe QWs. It was found that as the peak blueshifted, the overall EL was increasingly dominated by defect state emission due to poor hole injection into the QDQWs. The weak EL was also attributed to strong field-induced charge separation resulting from the unique QDQW geometry, weakening the oscillator strength of optical transitions
Emergence of the persistent spin helix in semiconductor quantum wells
International Nuclear Information System (INIS)
Koralek, Jake; Weber, Chris; Orenstein, Joe; Bernevig, Andrei; Zhang, Shoucheng; Mack, Shawn; Awschalom, David
2008-01-01
According to Noether's theorem, for every symmetry in nature there is a corresponding conservation law. For example, invariance with respect to spatial translation corresponds to conservation of momentum. In another well-known example, invariance with respect to rotation of the electron's spin, or SU(2) symmetry, leads to conservation of spin polarization. For electrons in a solid, this symmetry is ordinarily broken by spin-orbit (SO) coupling, allowing spin angular momentum to flow to orbital angular momentum. However, it has recently been predicted that SU(2) can be recovered in a two-dimensional electron gas (2DEG), despite the presence of SO coupling. The corresponding conserved quantities include the amplitude and phase of a helical spin density wave termed the 'persistent spin helix' (PSH) .2 SU(2) is restored, in principle, when the strength of two dominant SO interactions, the Rashba (alpha) and linear Dresselhaus (beta 1), are equal. This symmetry is predicted to be robust against all forms of spin-independent scattering, including electron-electron interactions, but is broken by the cubic Dresselhaus term (beta 3) and spin-dependent scattering. When these terms are negligible, the distance over which spin information can propagate is predicted to diverge as alpha approaches beta 1. Here we observe experimentally the emergence of the PSH in GaAs quantum wells (QW's) by independently tuning alpha and beta 1. Using transient spin-grating spectroscopy (TSG), we find a spin-lifetime enhancement of two orders of magnitude near the symmetry point. Excellent quantitative agreement with theory across a wide range of sample parameters allows us to obtain an absolute measure of all relevant SO terms, identifying beta 3 as the main SU(2) violating term in our samples. The tunable suppression of spin-relaxation demonstrated in this work is well-suited for application to spintronics
Emergence of the Persistent Spin Helix in Semiconductor Quantum Wells
International Nuclear Information System (INIS)
Koralek, Jake
2011-01-01
According to Noether's theorem, for every symmetry in nature there is a corresponding conservation law. For example, invariance with respect to spatial translation corresponds to conservation of momentum. In another well-known example, invariance with respect to rotation of the electron's spin, or SU(2) symmetry, leads to conservation of spin polarization. For electrons in a solid, this symmetry is ordinarily broken by spin-orbit (SO) coupling, allowing spin angular momentum to flow to orbital angular momentum. However, it has recently been predicted that SU(2) can be recovered in a two-dimensional electron gas (2DEG), despite the presence of SO coupling. The corresponding conserved quantities include the amplitude and phase of a helical spin density wave termed the 'persistent spin helix' (PSH). SU(2) is restored, in principle, when the strength of two dominant SO interactions, the Rashba (α) and linear Dresselhaus (β 1 ), are equal. This symmetry is predicted to be robust against all forms of spin-independent scattering, including electron-electron interactions, but is broken by the cubic Dresselhaus term (β 3 ) and spin-dependent scattering. When these terms are negligible, the distance over which spin information can propagate is predicted to diverge as α → β 1 . Here we observe experimentally the emergence of the PSH in GaAs quantum wells (QW's) by independently tuning α and β 1 . Using transient spin-grating spectroscopy (TSG), we find a spin-lifetime enhancement of two orders of magnitude near the symmetry point. Excellent quantitative agreement with theory across a wide range of sample parameters allows us to obtain an absolute measure of all relevant SO terms, identifying β 3 as the main SU(2) violating term in our samples. The tunable suppression of spin-relaxation demonstrated in this work is well-suited for application to spintronics.
Studies of quantum levels in GaInNAs single quantum wells
International Nuclear Information System (INIS)
Shirakata, Sho; Kondow, Masahiko; Kitatani, Takeshi
2006-01-01
Spectroscopic studies have been carried out on the quantum levels in GaInNAs/GaAs single quantum wells (SQWs). Photoluminescence (PL), PL excitation (PLE), photoreflectance (PR), and high-density-excited PL (HDE-PL) were measured on high quality GaInNAs SQWs, Ga 0.65 In 0.35 N 0.01 As 0.99 /GaAs (well thickness: l z =10 nm) and Ga 0.65 In 0.35 N 0.005 As 0.995 /GaAs (l z =3∝10 nm), grown by molecular-beam epitaxy. For Ga 0.65 In 0.35 N 0.01 As 0.99 /GaAs (l z =10 nm), PL at 8 K exhibited a peak at 1.07 eV due to the exciton-related transition between quantum levels of ground states (e1-hh1). Both PR and PLE exhibited three transitions (1.17, 1.20 and 1.32 eV), and the former two transitions were assigned to as either of e1-lh1 and e2-hh2 transitions, while the transition at 1.32 eV was assigned to as the e2-lh2 transition. For HDE-PL, a new PL peak was observed at about 1.2 eV, and it was assigned to the unresolved e1-lh1 and e2-hh2 transitions. Similar optical measurements have been done on the Ga 0.65 In 0.35 N 0.005 As 0.995 /GaAs with various l z (3∝10 nm). Dependence of optical spectra and energies of quantum levels on l z have been studied. It has been found that HDE-PL in combination with PLE is a good tool for the study of the quantum level of GaInNAs SQW. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (Abstract Copyright [2006], Wiley Periodicals, Inc.)
Rosales-Zárate, L.; Opanchuk, B.; He, Q. Y.; Reid, M. D.
2018-04-01
We construct quantifiable generalizations of Leggett-Garg tests for macro- and mesoscopic realism and noninvasive measurability that apply when not all outcomes of measurement can be identified as arising from one of two macroscopically distinguishable states. We show how quantum mechanics predicts a negation of the Leggett-Garg premises for strategies involving ideal negative-result, weak, and minimally invasive ("nonclumsy") projective measurements on dynamical entangled systems, as might be realized with Bose-Einstein condensates in a double-well potential, path-entangled NOON states, and atom interferometers. Potential loopholes associated with each strategy are discussed.
International Nuclear Information System (INIS)
Yuan Qingxin; Ding Guohui
2005-01-01
We investigate the phenomena of symmetry breaking and phase transition in the ground state of Bose-Einstein condensates (BECs) trapped in a double square well and in an optical lattice well, respectively. By using standing-wave expansion method, we present symmetric and asymmetric ground state solutions of nonlinear Schroedinger equation (NLSE) with a symmetric double square well potential for attractive nonlinearity. In particular, we study the ground state wave function's properties by changing the depth of potential and atomic interactions (here we restrict ourselves to the attractive regime). By using the Fourier grid Hamiltonian method, we also reveal a phase transition of BECs trapped in one-dimensional optical lattice potential.
International Nuclear Information System (INIS)
Yuan Qingxin; Ding Guohui
2005-01-01
We investigate the phenomena of symmetry breaking and phase transition in the ground state of Bose-Einstein condensates (BECs). For BECs trapped in a double square well potential, we present symmetric and asymmetric ground states by using standing-wave expansion method. For BECs trapped in an optical lattice well potential (created by a standing laser wave, and not just an extension of the double square well potential), we reveal a phase transition by using plane-wave expansion method. At the same time we also study the ground state properties with changing the depth of potential and atomic interactions (restrict ourselves to the attractive regime)
Theory of the Franz-Keldysh effect in quantum wells
International Nuclear Information System (INIS)
Trallero Giner, C.
1986-09-01
We use the effective-mass approximation to obtain the imaginary part, ε 2 , of the dielectric constant of a quantum well in an applied electric field for direct transitions at a normal (M O ) threshold. The calculations of ε 2 are used to evaluate the real part, ε 1 , of the dielectric constant through the Kramers-Kronig relations. The changes in ε 1 and ε 2 due to the electric field are expressed in terms of the corresponding electrooptic functions. All magnitudes are obtained, neglecting excitonic effects, for electric fields both perpendicular to and in the plane of the layers. We show that for fields parallel to the layers the electrooptic functions turn out to be a superposition of two-dimensional Franz-Keldysh ones. The electrooptic functions for fields perpendicular to the layers show a qualitatively different behaviour from those observed in bulk semiconductors. Analytic expressions for the Lorentzian broadening of ε 1 and ε 2 are given in terms of complex valued electrooptic functions of complex argument. (author)
States of an on-axis two-hydrogenic-impurity complex in concentric double quantum rings
International Nuclear Information System (INIS)
R-Fulla, M.; Marín, J.H.; Suaza, Y.A.; Duque, C.A.; Mora-Ramos, M.E.
2014-01-01
The energy structure of an on-axis two-donor system (D 2 0 ) confined in GaAs concentric double quantum rings under the presence of magnetic field and hydrostatic pressure was analyzed. Based on structural data for the double quantum ring morphology, a rigorous adiabatic procedure was implemented to separate the electrons' rapid in-plane motions from the slow rotational ones. A one-dimensional equation with an effective angular-dependent potential, which describes the two-electron rotations around the common symmetry axis of quantum rings was obtained. It was shown that D 2 0 complex characteristic features are strongly dependent on the quantum ring geometrical parameters. Besides, by changing the hydrostatic pressure and magnetic field strengths, it is possible to tune the D 2 0 energy structure. Our results are comparable to those previously reported for a single and negative ionized donor in a spherical quantum dot after a selective setting of the geometrical parameters of the structure. - Highlights: • We report the eigenenergies of a D 2 0 complex in concentric double quantum rings. • Our model is versatile enough to analyze the dissociation process D 2 0 →D 0 +D + +e − . • We compare the D 0 eigenenergies in horn toroidal and spherical shaped quantum dots. • We show the effects of hydrostatic pressure and magnetic field on the D 2 0 spectrum. • The use of hydrostatic pressure provides higher thermal stability to the D 2 0 complex
Fano effect and Andreev bound states in T-shape double quantum dots
International Nuclear Information System (INIS)
Calle, A.M.; Pacheco, M.; Orellana, P.A.
2013-01-01
In this Letter, we investigate the transport through a T-shaped double quantum dot coupled to two normal metal leads left and right and a superconducting lead. Analytical expressions of Andreev transmission and local density of states of the system at zero temperature have been obtained. We study the role of the superconducting lead in the quantum interferometric features of the double quantum dot. We report for first time the Fano effect produced by Andreev bound states in a side quantum dot. Our results show that as a consequence of quantum interference and proximity effect, the transmission from normal to normal lead exhibits Fano resonances due to Andreev bound states. We find that this interference effect allows us to study the Andreev bound states in the changes in the conductance between two normal leads. - Highlights: • Transport properties of a double quantum dot coupled in T-shape configuration to conducting and superconducting leads are studied. • We report Fano antiresonances in the normal transmission due to the Andreev reflections in the superconducting lead. • We report for first time the Fano effect produced by Andreev bound states in a side quantum dot. • Fano effect allows us to study the Andreev bound states in the changes in the conductance between two normal leads. • Andreev bound states survives even for strong dot-superconductor coupling
Physics of frequency-modulated comb generation in quantum-well diode lasers
Dong, Mark; Cundiff, Steven T.; Winful, Herbert G.
2018-05-01
We investigate the physical origin of frequency-modulated combs generated from single-section semiconductor diode lasers based on quantum wells, isolating the essential physics necessary for comb generation. We find that the two effects necessary for comb generation—spatial hole burning (leading to multimode operation) and four-wave mixing (leading to phase locking)—are indeed present in some quantum-well systems. The physics of comb generation in quantum wells is similar to that in quantum dot and quantum cascade lasers. We discuss the nature of the spectral phase and some important material parameters of these diode lasers.
High Efficiency Quantum Well Waveguide Solar Cells, Phase I
National Aeronautics and Space Administration — The long-term objective of this program is to develop flexible, lightweight, single-junction solar cells using quantum structured designs that can achieve ultra-high...
Wu, Feng; Sun, Haiding; Ajia, Idris A.; Roqan, Iman S.; Zhang, Daliang; Dai, Jiangnan; Chen, Changqing; Feng, Zhe Chuan; Li, Xiaohang
2017-01-01
Significant internal quantum efficiency (IQE) enhancement of GaN/AlGaN multiple quantum wells (MQWs) emitting at similar to 350 nm was achieved via a step quantum well (QW) structure design. The MQW structures were grown on AlGaN/AlN/sapphire templates by metal-organic chemical vapor deposition (MOCVD). High resolution x-ray diffraction (HR-XRD) and scanning transmission electron microscopy (STEM) were performed, showing sharp interface of the MQWs. Weak beam dark field imaging was conducted, indicating a similar dislocation density of the investigated MQWs samples. The IQE of GaN/AlGaN MQWs was estimated by temperature dependent photoluminescence (TDPL). An IQE enhancement of about two times was observed for the GaN/AlGaN step QW structure, compared with conventional QW structure. Based on the theoretical calculation, this IQE enhancement was attributed to the suppressed polarization-induced field, and thus the improved electron-hole wave-function overlap in the step QW.
Wu, Feng
2017-05-03
Significant internal quantum efficiency (IQE) enhancement of GaN/AlGaN multiple quantum wells (MQWs) emitting at similar to 350 nm was achieved via a step quantum well (QW) structure design. The MQW structures were grown on AlGaN/AlN/sapphire templates by metal-organic chemical vapor deposition (MOCVD). High resolution x-ray diffraction (HR-XRD) and scanning transmission electron microscopy (STEM) were performed, showing sharp interface of the MQWs. Weak beam dark field imaging was conducted, indicating a similar dislocation density of the investigated MQWs samples. The IQE of GaN/AlGaN MQWs was estimated by temperature dependent photoluminescence (TDPL). An IQE enhancement of about two times was observed for the GaN/AlGaN step QW structure, compared with conventional QW structure. Based on the theoretical calculation, this IQE enhancement was attributed to the suppressed polarization-induced field, and thus the improved electron-hole wave-function overlap in the step QW.
Wang, Z. H.; Zheng, Q.; Wang, Xiaoguang; Li, Yong
2016-03-01
We study the energy-level crossing behavior in a two-dimensional quantum well with the Rashba and Dresselhaus spin-orbit couplings (SOCs). By mapping the SOC Hamiltonian onto an anisotropic Rabi model, we obtain the approximate ground state and its quantum Fisher information (QFI) via performing a unitary transformation. We find that the energy-level crossing can occur in the quantum well system within the available parameters rather than in cavity and circuit quantum eletrodynamics systems. Furthermore, the influence of two kinds of SOCs on the QFI is investigated and an intuitive explanation from the viewpoint of the stationary perturbation theory is given.
All-optical XOR logic gate using intersubband transition in III-V quantum well materials.
Feng, Jijun; Akimoto, Ryoichi; Gozu, Shin-ichiro; Mozume, Teruo
2014-06-02
A monolithically integrated all-optical exclusive-OR (XOR) logic gate is experimentally demonstrated based on a Michelson interferometer (MI) gating device in InGaAs/AlAsSb coupled double quantum wells (CDQWs). The MI arms can convert the pump data with return-to-zero ON-OFF keying (RZ OOK) to binary phase-shift keying (BPSK) format, then two BPSK signals can interfere with each other for realizing a desired logical operation. All-optical format conversion from the RZ OOK to BPSK is based on the cross-phase modulation to the transverse electric (TE) probe wave, which is caused by the intersubband transition excited by the transverse magnetic (TM) pump light. Bit error rate measurements show that error free operation for both BPSK format conversion and XOR logical operation can be achieved.
Anisotropy of exciton spectrum and spin-orbit interactions in quantum wells in tilted magnetic field
International Nuclear Information System (INIS)
Olendski, Oleg; Shahbazyan, Tigran V
2006-01-01
We study theoretically excitonic energy spectrum and optical absorption in narrowgap semiconductor quantum wells in strong magnetic field. We show that, in the presence of an in-plane field component, the absorption coefficient exhibit a double-peak structure due to hybridization of bright and dark excitons. If both Rashba and Dresselhaus spin-orbit terms are present, the spectrum is anisotropic in in-plane field orientation with respect to [100] axis. In particular, the magnitude of the splitting can be tuned in a wide interval by varying the azimuthal angle of the in-plane field. The absorption spectrrum anisotropy would allow simultaneous measurement Dresselhaus and Rashba spin-orbit coefficients
Optical precursors with tunneling-induced transparency in asymmetric quantum wells
International Nuclear Information System (INIS)
Peng Yandong; Qi Yihong; Yao Haifeng; Niu Yueping; Gong Shangqing
2011-01-01
A scheme for separating optical precursors from a square-modulated laser pulse through an asymmetric double Al x Ga 1-x As/GaAs quantum-well structure via resonant tunneling is proposed. Destructive interference inhibits linear absorption, and a tunneling-induced transparency (TIT) window appears with normal dispersion, which delays the main pulse; then optical precursors are obtained. Due to resonant tunneling, constructive interference for nonlinear susceptibility is created. The enhanced dispersion in a narrow TIT window is about one order of magnitude larger than that of the linear case. In this case, the main pulse is much delayed and the precursor signals are easier to obtain. Moreover, the main pulse builds up due to the gain introduced by the enhanced cross-nonlinearity.
High intensity mid infra-red spectroscopy of intersubband transitions in semiconductor quantum wells
International Nuclear Information System (INIS)
Serapiglia, G.B.
2000-01-01
High intensity (10 8 Wcm -2 ) mid-infrared spectroscopy has been used to study the optical response of intersubband transitions in InGaAs/InAlAs quantum wells with three conduction subbands. Steady state optical pumping of 2 x 10 11 cm -2 electrons into the excited vertical bar2> subband and subsequent electron relaxation (via phonon emission) back to the ground vertical bar1> subband creates a non-equilibrium phonon population (phonon occupancy∼1 at T=30K). Phonon re-absorption leads to a non-thermal electron distribution where electron-phonon scattering rates ∼200-500fs -1 are much faster than electron-electron scattering. In this regime, the intersubband absorption is inhomogeneously broadened. For substantially weaker optical pumping (∼1 saturation intensity) however, the electron distribution is able to thermalise and the absorption is homogeneously broadened. The phenomenon of electromagnetically-induced quantum coherence is demonstrated between 3 confined electron subband levels in a quantum well which are almost equally spaced in energy. Applying a strong coupling field, two-photon-resonant with the 1-3 intersubband transition, produces a pronounced narrow transparency feature in the 1-2 absorption line. This result can be understood in terms of all 3 states being simultaneously driven into ''phase-locked'' quantum coherence by a single coupling field. We describe the effect theoretically with a density matrix method and an adapted linear response theory. Efficient (∼1%) second harmonic generation, resonantly enhanced near λ=8.6μm, has been observed in asymmetric double multi-quantum well (ADQW) structures. Both waveguide mode and 45 deg. wedge multi-bounce geometries were used. The phase matching in the waveguide mode was achieved by incorporating a separate multiple QW region which modifies (via Kramers-Kronig relation) the dispersion of light. In the case of the 45 deg. wedge geometry, the phases of second harmonic waves generated at sequential
Detection of single electron spin resonance in a double quantum dota)
Koppens, F. H. L.; Buizert, C.; Vink, I. T.; Nowack, K. C.; Meunier, T.; Kouwenhoven, L. P.; Vandersypen, L. M. K.
2007-04-01
Spin-dependent transport measurements through a double quantum dot are a valuable tool for detecting both the coherent evolution of the spin state of a single electron, as well as the hybridization of two-electron spin states. In this article, we discuss a model that describes the transport cycle in this regime, including the effects of an oscillating magnetic field (causing electron spin resonance) and the effective nuclear fields on the spin states in the two dots. We numerically calculate the current flow due to the induced spin flips via electron spin resonance, and we study the detector efficiency for a range of parameters. The experimental data are compared with the model and we find a reasonable agreement.
Quantum ratchet effect in a time non-uniform double-kicked model
Chen, Lei; Wang, Zhen-Yu; Hui, Wu; Chu, Cheng-Yu; Chai, Ji-Min; Xiao, Jin; Zhao, Yu; Ma, Jin-Xiang
2017-07-01
The quantum ratchet effect means that the directed transport emerges in a quantum system without a net force. The delta-kicked model is a quantum Hamiltonian model for the quantum ratchet effect. This paper investigates the quantum ratchet effect based on a time non-uniform double-kicked model, in which two flashing potentials alternately act on a particle with a homogeneous initial state of zero momentum, while the intervals between adjacent actions are not equal. The evolution equation of the state of the particle is derived from its Schrödinger equation, and the numerical method to solve the evolution equation is pointed out. The results show that quantum resonances can induce the ratchet effect in this time non-uniform double-kicked model under certain conditions; some quantum resonances, which cannot induce the ratchet effect in previous models, can induce the ratchet effect in this model, and the strengths of the ratchet effect in this model are stronger than those in previous models under certain conditions. These results enrich people’s understanding of the delta-kicked model, and provides a new optional scheme to control the quantum transport of cold atoms in experiment.
Energy Technology Data Exchange (ETDEWEB)
Khan, Salahuddin; Jayabalan, J., E-mail: jjaya@rrcat.gov.in; Chari, Rama; Pal, Suparna [Laser Physics Applications Section, Raja Ramanna Centre for Advanced Technology, Indore 452013 (India); Porwal, Sanjay; Sharma, Tarun Kumar; Oak, S. M. [Semiconductor Physics and Devices Lab., Solid State Laser Division, Raja Ramanna Centre for Advanced Technology, Indore 452013 (India)
2014-08-18
We report tunneling assisted beating of carriers in a near-surface single GaAsP/AlGaAs quantum well using transient reflectivity measurement. The observed damped oscillating signal has a period of 120 ± 6 fs which corresponds to the energy difference between lh1 and hh2 hole states in the quantum well. Comparing the transient reflectivity signal at different photon energies and with a buried quantum well sample, we show that the beating is caused by the coherent coupling between surface state and the hole states (lh1 and hh2) in the near-surface quantum well. The dependence of decay of coherence of these tunneling carriers on the excitation fluence is also reported. This observation on the coherent tunneling of carrier is important for future quantum device applications.
International Nuclear Information System (INIS)
Khan, Salahuddin; Jayabalan, J.; Chari, Rama; Pal, Suparna; Porwal, Sanjay; Sharma, Tarun Kumar; Oak, S. M.
2014-01-01
We report tunneling assisted beating of carriers in a near-surface single GaAsP/AlGaAs quantum well using transient reflectivity measurement. The observed damped oscillating signal has a period of 120 ± 6 fs which corresponds to the energy difference between lh1 and hh2 hole states in the quantum well. Comparing the transient reflectivity signal at different photon energies and with a buried quantum well sample, we show that the beating is caused by the coherent coupling between surface state and the hole states (lh1 and hh2) in the near-surface quantum well. The dependence of decay of coherence of these tunneling carriers on the excitation fluence is also reported. This observation on the coherent tunneling of carrier is important for future quantum device applications.
Electrical transport in strained silicon quantum wells on vicinal substrates
International Nuclear Information System (INIS)
Kaya, S.
1999-01-01
This thesis deals with the electrical transport studies of strained Si quantum wells grown on tilted Si substrates. Magnetotransport measurements at very low temperatures are used to investigate the high electron mobility, scattering processes and modified band structure for four different substrate orientations (2, 4, 6 and 10 deg.) and in two different directions of transport. We first discuss the morphology of the tilted system with the aid of, atomic force and optical microscopy. A clear change of surface morphology of tilted layers in comparison with the (001) type surfaces is explained by the degree of tilt in the system. The electron mobility and in-plane effective mass becomes anisotropic, which scale roughly with the tilt angle. The mobility anisotropy is shown to be the result of extra scattering when electrons travel across the steps common to vicinal surfaces. The extra scattering has characteristics similar to interface roughness scattering, as inferred from the trend that the transport (τ t ) and quantum scattering (τ q ) times follow. As the tilt angle grows, it is found that τ t /τ q →1 in the direction perpendicular to the steps. Electrons in tilted channels of multivalley semiconductors can involve a new interband scattering mechanism due to a one dimensional minigap opening in the conduction band. This effect, known from bulk Si MOSFETs, is investigated in strained Si for the first time in this thesis. First, the effect of applied electric fields on electron conduction is considered. Shubnikov-de Haas oscillations in the magnetoresistance data indicate a remarkably different electron scattering behaviour in tilted samples with increasing fields in directions parallel and perpendicular to the tilt direction. An FFT analysis of the data produces extra peaks in the electron density spectra. By clear contrast, flat samples grown under similar conditions do not show any unusual features. The difference is attributed to the existence of a minigap
Limiting scattering processes in high-mobility InSb quantum wells grown on GaSb buffer systems
Lehner, Ch. A.; Tschirky, T.; Ihn, T.; Dietsche, W.; Keller, J.; Fält, S.; Wegscheider, W.
2018-05-01
We present molecular beam epitaxial grown single- and double-side δ -doped InAlSb/InSb quantum wells with varying distances down to 50 nm to the surface on GaSb metamorphic buffers. We analyze the surface morphology as well as the impact of the crystalline quality on the electron transport. Comparing growth on GaSb and GaAs substrates indicates that the structural integrity of our InSb quantum wells is solely determined by the growth conditions at the GaSb/InAlSb transition and the InAlSb barrier growth. The two-dimensional electron gas samples show high mobilities of up to 349 000 cm2/Vs at cryogenic temperatures and 58 000 cm2/Vs at room temperature. With the calculated Dingle ratio and a transport lifetime model, ionized impurities predominantly remote from the quantum well are identified as the dominant source of scattering events. The analysis of the well-pronounced Shubnikov-de Haas oscillations reveals a high spin-orbit coupling with an effective g -factor of -38.4 in our samples. Along with the smooth surfaces and long mean free paths demonstrated, our InSb quantum wells are increasingly competitive for nanoscale implementations of Majorana mode devices.
Relaxation of electron energy in the polar semiconductor double quantum dots
Czech Academy of Sciences Publication Activity Database
Král, Karel; Khás, Zdeněk; Zdeněk, Petr; Čerňanský, Marian; Lin, C. Y.
2002-01-01
Roč. 314, - (2002), s. 490-493 ISSN 0921-4526 R&D Projects: GA AV ČR IAA1010113; GA MŠk OC P5.20 Institutional research plan: CEZ:AV0Z1010914 Keywords : quantum dots * relaxation * double quantum dots * electron-photon interaction Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 0.609, year: 2002
Effect of interface roughness on Auger recombination in semiconductor quantum wells
Tan, Chee-Keong; Sun, Wei; Wierer, Jonathan J.; Tansu, Nelson
2017-03-01
Auger recombination in a semiconductor is a three-carrier process, wherein the energy from the recombination of an electron and hole pair promotes a third carrier to a higher energy state. In semiconductor quantum wells with increased carrier densities, the Auger recombination becomes an appreciable fraction of the total recombination rate and degrades luminescence efficiency. Gaining insight into the variables that influence Auger recombination in semiconductor quantum wells could lead to further advances in optoelectronic and electronic devices. Here we demonstrate the important role that interface roughness has on Auger recombination within quantum wells. Our computational studies find that as the ratio of interface roughness to quantum well thickness is increased, Auger recombination is significantly enhanced. Specifically, when considering a realistic interface roughness for an InGaN quantum well, the enhancement in Auger recombination rate over a quantum well with perfect heterointerfaces can be approximately four orders of magnitude.
Manipulative Properties of Asymmetric Double Quantum Dots via Laser and Gate Voltage
International Nuclear Information System (INIS)
Shun-Cai, Zhao; Zheng-Dong, Liu
2009-01-01
We present a density matrix approach for the theoretical description of an asymmetric double quantum dot (QD) system. The results show that the properties of gain, absorption and dispersion of the double QD system, the population of the state with one hole in one dot and an electron in another dot transferred by tunneling can be manipulated by a laser pulse or gate voltage. Our scheme may demonstrate the possibility of electro-optical manipulation of quantum systems. (condensed matter: electronicstructure, electrical, magnetic, and opticalproperties)
Picosecond intersubband hole relaxation in p-type quantum wells
International Nuclear Information System (INIS)
Xu, Z.; Fauchet, P.M.; Rella, C.W.; Schwettman, H.A.
1995-01-01
We report the first direct measurement of the relaxation time of holes in p-type quantum wells using tunable, subpicosecond mid-infrared laser pulses in a pump-probe arrangement. The QW layers consisted of 50 In 0.5 Ga 0.5 As/Al 0.5 Ga 0.5 As periods. The In 0.5 Ga 0.5 As well was 4 nm wide and the Al 0.5 Ga 0.5 As barrier was 8 nm wide. The dopant concentration was 10 19 CM -3 which corresponds to a sheet density of 1.2 x 10 13 CM -2 . The room temperature IR spectrum showed a 50 meV wide absorption peak at 5.25 μm (220 meV). This energy agrees with the calculated n=1 heavy hole to n=1 light hole transition energy of 240 meV (150 meV for strain and 90 meV for confinement). The large absorption width results from hole-hole scattering and the difference in dispersion relations between the two subbands. The equal-wavelength pump-probe transmission measurements were performed using the Stanford free electron laser (FEL). The FEL pulses were tuned between 4 and 6 μ m and their duration was less than 1 ps. The measurements were performed as a function of temperature, pump wavelength and intensity (from 0.3 to 10 GW/cm 2 ). In all our experiments, we find an increase of transmission (decrease of absorption or bleaching) following photopumping, which recovers as a single exponential with a time constant (relaxation time) of the order of 1 picosecond. The maximum change in transmission is linear with pump 2 intensity below 1 GW/cm 2 and saturates to ∼3% with a saturation intensity I sat of 3 GW/cm 2 . As the saturation regime is entered, the relaxation time increases from 0.8 ps to 1.8 ps. This relaxation time depends on the temperature T: it increases from 0.8 ps to 1.3 ps as T decreases from 300 K to 77 K. Finally, when we tune the laser through the absorption band, the magnitude of the signal changes but its temporal behavior does not change, within the accuracy of the measurements
Magneto-transport study of quantum phases in wide GaAs quantum wells
Liu, Yang
In this thesis we study several quantum phases in very high quality two-dimensional electron systems (2DESs) confined to GaAs single wide quantum wells (QWs). In these systems typically two electric subbands are occupied. By controlling the electron density as well as the QW symmetry, we can fine tune the cyclotron and subband separation energies, so that Landau levels (LLs) belonging to different subbands cross at the Fermi energy EF. The additional subband degree of freedom enables us to study different quantum phases. Magneto-transport measurements at fixed electron density n and various QW symmetries reveal a remarkable pattern for the appearance and disappearance of fractional quantum Hall (FQH) states at LL filling factors nu = 10/3, 11/3, 13/3, 14/3, 16/3, and 17/3. These q/3 states are stable and strong as long as EF lies in a ground-state (N = 0) LL, regardless of whether that level belongs to the symmetric or the anti-symmetric subband. We also observe subtle and distinct evolutions near filling factors nu = 5/2 and 7/2, as we change the density n, or the symmetry of the charge distribution. The even-denominator FQH states are observed at nu = 5/2, 7/2, 9/2 and 11/2 when EF lies in the N= 1 LLs of the symmetric subband (the S1 levels). As we increase n, the nu = 5/2 FQH state suddenly disappears and turns into a compressible state once EF moves to the spin-up, N = 0, anti-symmetric LL (the A0 ↑ level). The sharpness of this disappearance suggests a first-order transition from a FQH to a compressible state. Moreover, thanks to the renormalization of the susbband energy separation in a well with asymmetric change distribution, two LLs can get pinned to each other when they are crossing at E F. We observe a remarkable consequence of such pinning: There is a developing FQH state when the LL filling factor of the symmetric subband nuS equals 5/2 while the antisymmetric subband has filling 1 < nuA <2. Next, we study the evolution of the nu=5/2 and 7/2 FQH
Spin injection in self-assembled quantum dots coupled with a diluted magnetic quantum well
International Nuclear Information System (INIS)
Murayama, A.; Asahina, T.; Souma, I.; Koyama, T.; Hyomi, K.; Nishibayashi, K.; Oka, Y.
2007-01-01
Spin injection is studied in self-assembled quantum dots (QDs) of CdSe coupled with a diluted magnetic semiconductor quantum well (DMS-QW) of Zn 1- x - y Cd x Mn y Se, by means of time-resolved circularly polarized photoluminescence (PL). Excitonic PL from the CdSe QDs shows σ - -circular polarization in magnetic fields, mainly due to negative g-values of individual dots, when the energy difference of excitons between the QDs and DMS-QW is large as 300 meV. However, when such energy difference is comparable with LO-phonon energy in the QD, we observe an additional PL peak with the long lifetime as 3.5 ns and σ + -polarization in magnetic fields. It can be attributed to a type-II transition between the down-spin electron injected from the DMS-QW into the QDs, via LO-phonon-assisted resonant tunneling, and the down-spin heavy hole in the DMS-QW. In addition, the electron spin-injection is also evidenced by σ + -polarized PL with the fast rise-time of 20 ps in the QDs
Full counting statistics of level renormalization in electron transport through double quantum dots
International Nuclear Information System (INIS)
Luo Junyan; Shen Yu; Cen Gang; He Xiaoling; Wang Changrong; Jiao Hujun
2011-01-01
We examine the full counting statistics of electron transport through double quantum dots coupled in series, with particular attention being paid to the unique features originating from level renormalization. It is clearly illustrated that the energy renormalization gives rise to a dynamic charge blockade mechanism, which eventually results in super-Poissonian noise. Coupling of the double dots to an external heat bath leads to dephasing and relaxation mechanisms, which are demonstrated to suppress the noise in a unique way.
Strong coupling and polariton lasing in Te based microcavities embedding (Cd,Zn)Te quantum wells
Energy Technology Data Exchange (ETDEWEB)
Rousset, J.-G., E-mail: j-g.rousset@fuw.edu.pl; Piętka, B.; Król, M.; Mirek, R.; Lekenta, K.; Szczytko, J.; Borysiuk, J.; Suffczyński, J.; Kazimierczuk, T.; Goryca, M.; Smoleński, T.; Kossacki, P.; Nawrocki, M.; Pacuski, W. [Institute of Experimental Physics, Faculty of Physics, University of Warsaw, ul. Pasteura 5, PL-02-093 Warszawa (Poland)
2015-11-16
We report on properties of an optical microcavity based on (Cd,Zn,Mg)Te layers and embedding (Cd,Zn)Te quantum wells. The key point of the structure design is the lattice matching of the whole structure to MgTe, which eliminates the internal strain and allows one to embed an arbitrary number of unstrained quantum wells in the microcavity. We evidence the strong light-matter coupling regime already for the structure containing a single quantum well. Embedding four unstrained quantum wells results in further enhancement of the exciton-photon coupling and the polariton lasing in the strong coupling regime.
Direct observation of free-exciton thermalization in quantum-well structures
DEFF Research Database (Denmark)
Umlauff, M.; Hoffmann, J.; Kalt, H.
1998-01-01
We report on a direct observation of free-exciton thermalization in quantum-well structures. A narrow energy distribution of free 1s excitons is created in ZnSe-based quantum wells by emission of one LO phonon after optical excitation of the continuum stales with picosecond laser pulses. The subs......We report on a direct observation of free-exciton thermalization in quantum-well structures. A narrow energy distribution of free 1s excitons is created in ZnSe-based quantum wells by emission of one LO phonon after optical excitation of the continuum stales with picosecond laser pulses...
Soliton dynamical properties of Bose—Einstein condensates trapped in a double square well potential
International Nuclear Information System (INIS)
Li Jin-Hui; Li Zhi-Jian
2011-01-01
We first present an analytical solution of the single and double solitions of Bose—Einstein condensates trapped in a double square well potential using the multiple-scale method. Then, we show by numerical calculation that a dark soliton can be transmitted through the square well potential. With increasing depth of the square well potential, the amplitude of the dark soliton becomes larger, and the soliton propagates faster. In particular, we treat the collision behaviour of the condensates trapped in either equal or different depths of the double square well potential. If we regard the double square well potential as the output source of the solitons, the collision locations (position and time) between two dark solitons can be controlled by its depth. (general)
Analytical Solutions of a Model for Brownian Motion in the Double Well Potential
International Nuclear Information System (INIS)
Liu Ai-Jie; Zheng Lian-Cun; Zhang Xin-Xin; Ma Lian-Xi
2015-01-01
In this paper, the analytical solutions of Schrödinger equation for Brownian motion in a double well potential are acquired by the homotopy analysis method and the Adomian decomposition method. Double well potential for Brownian motion is always used to obtain the solutions of Fokker—Planck equation known as the Klein—Kramers equation, which is suitable for separation and additive Hamiltonians. In essence, we could study the random motion of Brownian particles by solving Schrödinger equation. The analytical results obtained from the two different methods agree with each other well. The double well potential is affected by two parameters, which are analyzed and discussed in details with the aid of graphical illustrations. According to the final results, the shapes of the double well potential have significant influence on the probability density function. (general)
Non-square quantum well growth for reduced threshold current in ...
African Journals Online (AJOL)
This paper presents calculations demonstrating that non-square quantum well growth (well shaping) can result in reduced threshold current for tensilely strained quantum well bipolar diode lasers operating at 1.52ìm m. Calculations of subband structure, optical matrix elements and laser gain are performed for arbitrarily ...
Rameez-ul-Islam; Ikram, Manzoor; Hasan Mujtaba, Abid; Abbas, Tasawar
2018-01-01
We propose an idea for symmetric measurements through the famous double slit experiment (DSE) in a new detection scenario. The interferometric setup is complemented here with quantum detectors that switch to an arbitrary superposition after interaction with the arms of the DSE. The envisioned schematics cover the full measurement range, i.e. from the weak to the strong projective situation with selectivity being a smoothly tunable open option, and suggests an alternative methodology for weak measurements based on information overlap from DSE paths. The results, though generally in agreement with the quantum paradigm, raise many questions over the nature of probabilities, the absurdity of the common language for phenomena’s description in the theory and the boundary separating the projective/non-projective measurements, and the related misconceived interpretations. Further, the results impose certain constraints over the hidden variable theories as well as on the repercussions of the weak measurements. Although described as a thought experiment, the proposal can equally be implemented experimentally under a prevailing research scenario.
Charge Dynamics and Spin Blockade in a Hybrid Double Quantum Dot in Silicon
Directory of Open Access Journals (Sweden)
Matias Urdampilleta
2015-08-01
Full Text Available Electron spin qubits in silicon, whether in quantum dots or in donor atoms, have long been considered attractive qubits for the implementation of a quantum computer because of silicon’s “semiconductor vacuum” character and its compatibility with the microelectronics industry. While donor electron spins in silicon provide extremely long coherence times and access to the nuclear spin via the hyperfine interaction, quantum dots have the complementary advantages of fast electrical operations, tunability, and scalability. Here, we present an approach to a novel hybrid double quantum dot by coupling a donor to a lithographically patterned artificial atom. Using gate-based rf reflectometry, we probe the charge stability of this double quantum-dot system and the variation of quantum capacitance at the interdot charge transition. Using microwave spectroscopy, we find a tunnel coupling of 2.7 GHz and characterize the charge dynamics, which reveals a charge T_{2}^{*} of 200 ps and a relaxation time T_{1} of 100 ns. Additionally, we demonstrate a spin blockade at the inderdot transition, opening up the possibility to operate this coupled system as a singlet-triplet qubit or to transfer a coherent spin state between the quantum dot and the donor electron and nucleus.
On the relation between the modular double of Uq(sl(2,R)) and the quantum Teichmueller theory
International Nuclear Information System (INIS)
Nidaiev, Iurii; Teschner, Joerg
2013-02-01
We exhibit direct relations between the modular double of U q (sl(2,R)) and the quantum Teichmueller theory. Explicit representations for the fusion- and braiding operations of the quantum Teichmueller theory are immediate consequences. Our results include a simplified derivation of the Clebsch-Gordan decomposition for the principal series of representation of the modular double of U q (sl(2,R)).
Double-quantum homonuclear correlations of spin I=5/2 nuclei.
Iuga, Dinu
2011-02-01
The challenges associated with acquiring double-quantum homonuclear Nuclear Magnetic Resonance correlation spectra of half-integer quadrupolar nuclei are described. In these experiments the radio-frequency irradiation amplitude is necessarily weak in order to selectively excite the central transition. In this limit only one out of the 25 double-quantum coherences possible for two coupled spin I=5/2 nuclei is excited. An investigation of all the 25 two spins double quantum transitions reveals interesting effects such as a compensation of the first-order quadrupolar interaction between the two single quantum transitions involved in the double quantum coherence. In this paper a full numerical study of a hypothetical two spin I=5/2 system is used to show what happens when the RF amplitude during recoupling is increased. In principle this is advantageous, since the required double quantum coherence should build up faster, but in practice it also induces adiabatic passage transfer of population and coherence which impedes any build up. Finally an optimized rotary resonance recoupling (oR(3)) sequence is introduced in order to decrease these transfers. This sequence consists of a spin locking irradiation whose amplitude is reduced four times during one rotor period, and allows higher RF powers to be used during recoupling. The sequence is used to measure (27)Al DQ dipolar correlation spectra of Y(3)Al(5)O(12) (YAG) and gamma alumina (γAl(2)O(3)). The results prove that aluminium vacancies in gamma alumina mainly occur in the tetrahedral sites. Copyright © 2010 Elsevier Inc. All rights reserved.
International Nuclear Information System (INIS)
Sęk, Grzegorz; Andrzejewski, Janusz; Ryczko, Krzysztof; Poloczek, Przemysław; Misiewicz, Jan; Semenova, Elizaveta S; Lemaitre, Aristide; Patriarche, Gilles; Ramdane, Aberrahim
2009-01-01
We report on the electronic properties of GaAs-substrate-based structures designed as a tunnel-injection system composed of self-assembled InAs quantum dots and an In 0.3 Ga 0.7 As quantum well separated by a GaAs barrier. We have performed photoluminescence and photoreflectance measurements which have allowed the determination of the optical transitions in the QW–QD tunnel structure and its respective references with just quantum dots or a quantum well. The effective mass calculations of the band structure dependence on the tunnelling barrier thickness have shown that in spite of an expected significant tunnelling between both parts of the system, its strong asymmetry and the strain distribution cause that the quantum-mechanical-coupling-induced energy shift of the optical transitions is almost negligible for the lowest energy states and weakly sensitive to the width of the barrier, which finds confirmation in the existing experimental data
Double-well chimeras in 2D lattice of chaotic bistable elements
Shepelev, I. A.; Bukh, A. V.; Vadivasova, T. E.; Anishchenko, V. S.; Zakharova, A.
2018-01-01
We investigate spatio-temporal dynamics of a 2D ensemble of nonlocally coupled chaotic cubic maps in a bistability regime. In particular, we perform a detailed study on the transition ;coherence - incoherence; for varying coupling strength for a fixed interaction radius. For the 2D ensemble we show the appearance of amplitude and phase chimera states previously reported for 1D ensembles of nonlocally coupled chaotic systems. Moreover, we uncover a novel type of chimera state, double-well chimera, which occurs due to the interplay of the bistability of the local dynamics and the 2D ensemble structure. Additionally, we find double-well chimera behavior for steady states which we call double-well chimera death. A distinguishing feature of chimera patterns observed in the lattice is that they mainly combine clusters of different chimera types: phase, amplitude and double-well chimeras.
Energy Technology Data Exchange (ETDEWEB)
Radosavljević, S.; Radovanović, J., E-mail: radovanovic@etf.bg.ac.rs; Milanović, V. [School of Electrical Engineering, University of Belgrade, Bulevar kralja Aleksandra 73, 11200 Belgrade (Serbia); Tomić, S. [Joule Physics Laboratory, School of Computing, Science and Engineering, University of Salford, Manchester M5 4WT (United Kingdom)
2014-07-21
We have described a method for structural parameters optimization of GaN/AlGaN multiple quantum well based up-converter for silicon solar cells. It involves a systematic tuning of individual step quantum wells by use of the genetic algorithm for global optimization. In quantum well structures, the up-conversion process can be achieved by utilizing nonlinear optical effects based on intersubband transitions. Both single and double step quantum wells have been tested in order to maximize the second order susceptibility derived from the density matrix formalism. The results obtained for single step wells proved slightly better and have been further pursued to obtain a more complex design, optimized for conversion of an entire range of incident photon energies.
Sayer, Ryan; Maries, Alexandru; Singh, Chandralekha
2017-06-01
Learning quantum mechanics is challenging, even for upper-level undergraduate and graduate students. Research-validated interactive tutorials that build on students' prior knowledge can be useful tools to enhance student learning. We have been investigating student difficulties with quantum mechanics pertaining to the double-slit experiment in various situations that appear to be counterintuitive and contradict classical notions of particles and waves. For example, if we send single electrons through the slits, they may behave as a "wave" in part of the experiment and as a "particle" in another part of the same experiment. Here we discuss the development and evaluation of a research-validated Quantum Interactive Learning Tutorial (QuILT) which makes use of an interactive simulation to improve student understanding of the double-slit experiment and strives to help students develop a good grasp of foundational issues in quantum mechanics. We discuss common student difficulties identified during the development and evaluation of the QuILT and analyze the data from the pretest and post test administered to the upper-level undergraduate and first-year physics graduate students before and after they worked on the QuILT to assess its effectiveness. These data suggest that on average, the QuILT was effective in helping students develop a more robust understanding of foundational concepts in quantum mechanics that defy classical intuition using the context of the double-slit experiment. Moreover, upper-level undergraduates outperformed physics graduate students on the post test. One possible reason for this difference in performance may be the level of student engagement with the QuILT due to the grade incentive. In the undergraduate course, the post test was graded for correctness while in the graduate course, it was only graded for completeness.
Directory of Open Access Journals (Sweden)
Ryan Sayer
2017-05-01
Full Text Available Learning quantum mechanics is challenging, even for upper-level undergraduate and graduate students. Research-validated interactive tutorials that build on students’ prior knowledge can be useful tools to enhance student learning. We have been investigating student difficulties with quantum mechanics pertaining to the double-slit experiment in various situations that appear to be counterintuitive and contradict classical notions of particles and waves. For example, if we send single electrons through the slits, they may behave as a “wave” in part of the experiment and as a “particle” in another part of the same experiment. Here we discuss the development and evaluation of a research-validated Quantum Interactive Learning Tutorial (QuILT which makes use of an interactive simulation to improve student understanding of the double-slit experiment and strives to help students develop a good grasp of foundational issues in quantum mechanics. We discuss common student difficulties identified during the development and evaluation of the QuILT and analyze the data from the pretest and post test administered to the upper-level undergraduate and first-year physics graduate students before and after they worked on the QuILT to assess its effectiveness. These data suggest that on average, the QuILT was effective in helping students develop a more robust understanding of foundational concepts in quantum mechanics that defy classical intuition using the context of the double-slit experiment. Moreover, upper-level undergraduates outperformed physics graduate students on the post test. One possible reason for this difference in performance may be the level of student engagement with the QuILT due to the grade incentive. In the undergraduate course, the post test was graded for correctness while in the graduate course, it was only graded for completeness.
Fourier transform and the Verlinde formula for the quantum double of a finite group
Koornwinder, T.H.; Schroers, B.J.; Slingerland, J.K.; Bais, F.A.
1999-01-01
We define a Fourier transform $S$ for the quantum double $D(G)$ of a finite group $G$. Acting on characters of $D(G)$, $S$ and the central ribbon element of $D(G)$ generate a unitary matrix representation of the group $SL(2,Z)$. The characters form a ring over the integers under both the algebra
Symmetric Double Quantum Dot Energy States in a High Magnetic Field
International Nuclear Information System (INIS)
Morgenstern Horing, Norman J; Sawamura, Makoto
2011-01-01
The dynamical Green's function and energy spectrum of a 2D symmetric quantum double-dot system on a planar host in a normal magnetic field are analyzed here, representing the two dots by Dirac delta function potentials. The proliferation of energy levels due to Landau quantization is examined in detail.
Twisting products in Hopf algebras and the construction of the quantum double
International Nuclear Information System (INIS)
Ferrer Santos, W.R.
1992-04-01
Let H be a finite dimensional Hopf algebra and B an (H, H*)-comodule algebra. The purpose of this note is to present a construction in which the product of B is twisted by the given actions. The constructions of the smash product and of the Quantum Double appear as special cases. (author). 7 refs
A Ge/Si heterostructure nanowire-based double quantum dot with integrated charge sensor
DEFF Research Database (Denmark)
Hu, Yongjie; Churchill, Hugh; Reilly, David
2007-01-01
Coupled electron spins in semiconductor double quantum dots hold promise as the basis for solid-state qubits. To date, most experiments have used III-V materials, in which coherence is limited by hyperfine interactions. Ge/Si heterostructure nanowires seem ideally suited to overcome this limitati...
Singh, Madhav K.; Jha, Pradeep K.; Bhattacherjee, Aranya B.
2017-09-01
In this article, we study the spin and tunneling dynamics as a function of magnetic field in a one-dimensional GaAs double quantum dot with both the Dresselhaus and Rashba spin-orbit coupling. In particular, we consider different spatial widths for the spin-up and spin-down electronic states. We find that the spin dynamics is a superposition of slow as well as fast Rabi oscillations. It is found that the Rashba interaction strength as well as the external magnetic field strongly modifies the slow Rabi oscillations which is particularly useful for implementing solid state selective spin transport device.
Double Exponential Relativity Theory Coupled Theoretically with Quantum Theory?
International Nuclear Information System (INIS)
Montero Garcia, Jose de la Luz; Novoa Blanco, Jesus Francisco
2007-01-01
Here the problem of special relativity is analyzed into the context of a new theoretical formulation: the Double Exponential Theory of Special Relativity with respect to which the current Special or Restricted Theory of Relativity (STR) turns to be a particular case only
Double-slit experiment with single wave-driven particles and its relation to quantum mechanics
DEFF Research Database (Denmark)
Andersen, Anders Peter; Madsen, Jacob; Reichelt, Christian Günther
2015-01-01
even though it is possible to determine unambiguously which slit the walking droplet passes. Here we argue, however, that the single-particle statistics in such an experiment will be fundamentally different from the single-particle statistics of quantum mechanics. Quantum mechanical interference takes...... place between different classical paths with precise amplitude and phase relations. In the double-slit experiment with walking droplets, these relations are lost since one of the paths is singled out by the droplet. To support our conclusions, we have carried out our own double-slit experiment, and our...... results, in particular the long and variable slit passage times of the droplets, cast strong doubt on the feasibility of the interference claimed by Couder and Fort. To understand theoretically the limitations of wave-driven particle systems as analogs to quantum mechanics, we introduce a Schro...
Tunneling conductance in superconductor-hybrid double quantum dots Josephson junction
Chamoli, Tanuj; Ajay
2018-05-01
The present work deals with the theoretical model study to analyse the tunneling conductance across a superconductor hybrid double quantum dots tunnel junction (S-DQD-S). Recently, there are many experimental works where the Josephson current across such nanoscopic junction is found to be dependent on nature of the superconducting electrodes, coupling of the hybrid double quantum dot's electronic states with the electronic states of the superconductors and nature of electronic structure of the coupled dots. For this, we have attempted a theoretical model containing contributions of BCS superconducting leads, magnetic coupled quantum dot states and coupling of superconducting leads with QDs. In order to include magnetic coupled QDs the contributions of competitive Kondo and Ruderman-Kittel- Kasuya-Yosida (RKKY) interaction terms are also introduced through many body effects in the model Hamiltonian at low temperatures (where Kondo temperature TK tunnel junctions. Tunneling conductance is proportional to DOS, hence we can analyse it's behaviour with the help of DOS.
International Nuclear Information System (INIS)
Zhao, Dongxing; Wu, Jiarui; Gu, Ying; Gong, Qihuang
2014-01-01
We propose tailoring of the double Fano profiles via plasmon-assisted quantum interference in a hybrid exciton-plasmon system. Tailoring is performed by the interference between two exciton channels interacting with a common localized surface plasmon. Using an applied field of low intensity, the absorption spectrum of the hybrid system reveals a double Fano lineshape with four peaks. For relatively large field intensity, a broad flat window in the absorption spectrum appears which results from the destructive interference between excitons. Because of strong constructive interference, this window vanishes as intensity is further increased. We have designed a nanometer bandpass optical filter for visible light based on tailoring of the optical spectrum. This study provides a platform for quantum interference that may have potential applications in ultracompact tunable quantum devices.
International Nuclear Information System (INIS)
Yelin, S.F.; Hemmer, P.R.
2002-01-01
A novel class of coherent nonlinear optical phenomena, involving induced transparency in semiconductor quantum wells, is considered in the context of a particular application to sensitive long-wavelength infrared detection. It is shown that the strongest decoherence mechanisms can be suppressed or mitigated, resulting in substantial enhancement of nonlinear optical effects in semiconductor quantum wells
Analytic methods for ﬁeld induced tunneling in quantum wells
Indian Academy of Sciences (India)
Analytic methods for ﬁeld induced tunneling in quantum wells with arbitrary potential proﬁles ... Electric ﬁeld induced tunneling is studied in three different types of quantum wells by solving time-independent effective mass ... Current Issue : Vol.
Electroreflectance investigations of quantum confined Stark effect in GaN quantum wells
International Nuclear Information System (INIS)
Drabinska, A; Pakula, K; Baranowski, J M; Wysmolek, A
2010-01-01
In this paper we present room temperature electroreflectance studies of GaN quantum wells (QWs) with different well width. The electroreflectance measurements were performed with external voltage applied to the structure therefore it was possible to tune the electric field inside QW up to its completely screening and furthermore even reversing it. The analysis of QW spectral lines showed the Stark shift dependence on applied voltage and well width reaching about 35 meV for highest voltage and widest well width. It was possible to obtain the condition of zero electric field in QW. Both broadening and amplitude of QW lines are minimal for zero electric field and increases for increasing electric field in QW. The energy transition is maximum for zero electric field and for increasing electric field it decreases due to Stark effect. Neither amplitude and broadening parameter nor energy transition does not depend on the direction of electric field. Only parameter that depends on the direction of electric field in QW is phase of the signal. The analysis of Franz-Keldysh oscillations (FKOs) from AlGaN barriers allowed to calculate the real electric field dependence on applied voltage and therefore to obtain the Stark shift dependence on electric field. The Stark shift reached from -12 meV to -35 meV for 450 kV/cm depending on the well width. This conditions were established for highest forward voltages therefore this is the value of electric field and Stark shift caused only by the intrinsic polarization of nitrides.
Double-slit experiment with single wave-driven particles and its relation to quantum mechanics.
Andersen, Anders; Madsen, Jacob; Reichelt, Christian; Rosenlund Ahl, Sonja; Lautrup, Benny; Ellegaard, Clive; Levinsen, Mogens T; Bohr, Tomas
2015-07-01
In a thought-provoking paper, Couder and Fort [Phys. Rev. Lett. 97, 154101 (2006)] describe a version of the famous double-slit experiment performed with droplets bouncing on a vertically vibrated fluid surface. In the experiment, an interference pattern in the single-particle statistics is found even though it is possible to determine unambiguously which slit the walking droplet passes. Here we argue, however, that the single-particle statistics in such an experiment will be fundamentally different from the single-particle statistics of quantum mechanics. Quantum mechanical interference takes place between different classical paths with precise amplitude and phase relations. In the double-slit experiment with walking droplets, these relations are lost since one of the paths is singled out by the droplet. To support our conclusions, we have carried out our own double-slit experiment, and our results, in particular the long and variable slit passage times of the droplets, cast strong doubt on the feasibility of the interference claimed by Couder and Fort. To understand theoretically the limitations of wave-driven particle systems as analogs to quantum mechanics, we introduce a Schrödinger equation with a source term originating from a localized particle that generates a wave while being simultaneously guided by it. We show that the ensuing particle-wave dynamics can capture some characteristics of quantum mechanics such as orbital quantization. However, the particle-wave dynamics can not reproduce quantum mechanics in general, and we show that the single-particle statistics for our model in a double-slit experiment with an additional splitter plate differs qualitatively from that of quantum mechanics.
Double-slit experiment with single wave-driven particles and its relation to quantum mechanics
Andersen, Anders; Madsen, Jacob; Reichelt, Christian; Rosenlund Ahl, Sonja; Lautrup, Benny; Ellegaard, Clive; Levinsen, Mogens T.; Bohr, Tomas
2015-07-01
In a thought-provoking paper, Couder and Fort [Phys. Rev. Lett. 97, 154101 (2006), 10.1103/PhysRevLett.97.154101] describe a version of the famous double-slit experiment performed with droplets bouncing on a vertically vibrated fluid surface. In the experiment, an interference pattern in the single-particle statistics is found even though it is possible to determine unambiguously which slit the walking droplet passes. Here we argue, however, that the single-particle statistics in such an experiment will be fundamentally different from the single-particle statistics of quantum mechanics. Quantum mechanical interference takes place between different classical paths with precise amplitude and phase relations. In the double-slit experiment with walking droplets, these relations are lost since one of the paths is singled out by the droplet. To support our conclusions, we have carried out our own double-slit experiment, and our results, in particular the long and variable slit passage times of the droplets, cast strong doubt on the feasibility of the interference claimed by Couder and Fort. To understand theoretically the limitations of wave-driven particle systems as analogs to quantum mechanics, we introduce a Schrödinger equation with a source term originating from a localized particle that generates a wave while being simultaneously guided by it. We show that the ensuing particle-wave dynamics can capture some characteristics of quantum mechanics such as orbital quantization. However, the particle-wave dynamics can not reproduce quantum mechanics in general, and we show that the single-particle statistics for our model in a double-slit experiment with an additional splitter plate differs qualitatively from that of quantum mechanics.
Role of asymmetries in the chaotic dynamics of the double-well ...
Indian Academy of Sciences (India)
Duffing oscillator driven by a periodic force with three different forms of asymmetrical double-well potentials is considered. Three forms of asymmetry are introduced by varying the depth of the left-well alone, location of the minimum of the left-well alone and above both the potentials. Applying the Melnikov method, the ...
Role of asymmetries in the chaotic dynamics of the double-well ...
Indian Academy of Sciences (India)
values of the control parameters there is no attractor in the left-well or in the ... periments with the double-well system of submicron Bi wires change in the depth .... each of the three unperturbed systems, the homoclinic orbits in the left-well and.
Quantum square-well with logarithmic central spike
Czech Academy of Sciences Publication Activity Database
Znojil, Miloslav; Semorádová, Iveta
2018-01-01
Roč. 33, č. 2 (2018), č. článku 1850009. ISSN 0217-7323 R&D Projects: GA ČR GA16-22945S Institutional support: RVO:61389005 Keywords : state-dependence of interactions * effective Hamiltonians * logarithmic nonlinearities * linearized quantum toy model Subject RIV: BE - Theoretical Physics OBOR OECD: Atomic, molecular and chemical physics ( physics of atoms and molecules including collision, interaction with radiation, magnetic resonances, Mössbauer effect) Impact factor: 1.165, year: 2016
States of an on-axis two-hydrogenic-impurity complex in concentric double quantum rings
Energy Technology Data Exchange (ETDEWEB)
R-Fulla, M., E-mail: marlonfulla@yahoo.com [Escuela de Física, Universidad Nacional de Colombia, A.A. 3840, Medellín (Colombia); Institución Universitaria Pascual Bravo, A.A. 6564, Medellín (Colombia); Marín, J.H.; Suaza, Y.A. [Escuela de Física, Universidad Nacional de Colombia, A.A. 3840, Medellín (Colombia); Duque, C.A. [Grupo de Materia Condensada-U de A, Instituto de Física, Facultad de Ciencias Exactas y Naturales, Universidad de Antioquia, calle 70 No. 52-21, Medellín (Colombia); Mora-Ramos, M.E. [Facultad de Ciencias, Universidad Autónoma del Estado de Morelos, Av. Universidad 1001, CP 62209, Cuernavaca, Morelos (Mexico)
2014-06-13
The energy structure of an on-axis two-donor system (D{sub 2}{sup 0}) confined in GaAs concentric double quantum rings under the presence of magnetic field and hydrostatic pressure was analyzed. Based on structural data for the double quantum ring morphology, a rigorous adiabatic procedure was implemented to separate the electrons' rapid in-plane motions from the slow rotational ones. A one-dimensional equation with an effective angular-dependent potential, which describes the two-electron rotations around the common symmetry axis of quantum rings was obtained. It was shown that D{sub 2}{sup 0} complex characteristic features are strongly dependent on the quantum ring geometrical parameters. Besides, by changing the hydrostatic pressure and magnetic field strengths, it is possible to tune the D{sub 2}{sup 0} energy structure. Our results are comparable to those previously reported for a single and negative ionized donor in a spherical quantum dot after a selective setting of the geometrical parameters of the structure. - Highlights: • We report the eigenenergies of a D{sub 2}{sup 0} complex in concentric double quantum rings. • Our model is versatile enough to analyze the dissociation process D{sub 2}{sup 0}→D{sup 0}+D{sup +}+e{sup −}. • We compare the D{sup 0} eigenenergies in horn toroidal and spherical shaped quantum dots. • We show the effects of hydrostatic pressure and magnetic field on the D{sub 2}{sup 0} spectrum. • The use of hydrostatic pressure provides higher thermal stability to the D{sub 2}{sup 0} complex.
Design and Fabrication of Multi Quantum well based GaN/InGaN Blue LED
Meel, K.; Mahala, P.; Singh, S.
2018-03-01
This paper presents the optimization of the multi-quantum well based Light Emitting Diode (LED) structure. We investigate the electrical and optical properties of the device on several factors like well width, barrier width, the number of quantum wells and then optimize the structure. The device is optimized for a well width and barrier width of 3nm and 6nm respectively, consisting of five quantum wells. Simulations were carried out using Silvaco ATLAS TCAD simulation program (Silvaco International, USA). The optimized structure was grown by MOCVD and fabricated. The I-V characteristic was also measured.
Double-beta decay processes from lattice quantum chromodynamics
Davoudi, Zohreh; Tiburzi, Brian; Wagman, Michael; Winter, Frank; Chang, Emmanuel; Detmold, William; Orginos, Kostas; Savage, Martin; Shanahan, Phiala; Nplqcd Collaboration
2017-09-01
While an observation of neutrinoless double-beta decay in upcoming experiments will establish that the neutrinos are Majorana particles, the underlying new physics responsible for this decay can only be constrained if the theoretical predictions of the rate are substantially refined. This talk demonstrates the roadmap in connecting the underlying high-scale theory to the corresponding nuclear matrix elements, focusing mainly on the nucleonic matrix elements in the simplest extension of Standard Model in which a light Majorana neutrino is mediating the process. The role of lattice QCD and effective field theory in this program, in particular, the prospect of a direct matching of the nn to pp amplitude to lattice QCD will be discussed. As a first step towards this goal, the results of the first lattice QCD calculation of the relevant matrix element for neutrinofull double-beta decay will be presented, albeit with unphysical quark masses, along with important lessons that could impact the calculations of nuclear matrix elements involved in double-beta decays of realistic nuclei.
Cavity-photon-switched coherent transient transport in a double quantum waveguide
Energy Technology Data Exchange (ETDEWEB)
Abdullah, Nzar Rauf, E-mail: nra1@hi.is; Gudmundsson, Vidar, E-mail: vidar@raunvis.hi.is [Science Institute, University of Iceland, Dunhaga 3, IS-107 Reykjavik (Iceland); Tang, Chi-Shung [Department of Mechanical Engineering, National United University, 1, Lienda, 36003 Miaoli, Taiwan (China); Manolescu, Andrei [School of Science and Engineering, Reykjavik University, Menntavegur 1, IS-101 Reykjavik (Iceland)
2014-12-21
We study a cavity-photon-switched coherent electron transport in a symmetric double quantum waveguide. The waveguide system is weakly connected to two electron reservoirs, but strongly coupled to a single quantized photon cavity mode. A coupling window is placed between the waveguides to allow electron interference or inter-waveguide transport. The transient electron transport in the system is investigated using a quantum master equation. We present a cavity-photon tunable semiconductor quantum waveguide implementation of an inverter quantum gate, in which the output of the waveguide system may be selected via the selection of an appropriate photon number or “photon frequency” of the cavity. In addition, the importance of the photon polarization in the cavity, that is, either parallel or perpendicular to the direction of electron propagation in the waveguide system is demonstrated.
Low field Monte-Carlo calculations in heterojunctions and quantum wells
Hall, van P.J.; Rooij, de R.; Wolter, J.H.
1990-01-01
We present results of low-field Monte-Carlo calculations and compare them with experimental results. The negative absolute mobility of minority electrons in p-type quantum wells, as found in recent experiments, is described quite well.
The over-barrier resonant states and multi-channel scattering by a quantum well
Directory of Open Access Journals (Sweden)
Alexander F. Polupanov
2008-06-01
Full Text Available We demonstrate an explicit numerical method for accurate calculation ofthe analytic continuation of the scattering matrix, describing the multichannelscattering by a quantum well, to the unphysical region of complexvalues of the energy. Results of calculations show that one or severalpoles of the S-matrix exist, corresponding to the over-barrier resonantstates that are critical for the effect of the absolute reflection at scatteringof the heavy hole by a quantum well in the energy range where only theheavy hole may propagate over barriers in a quantum-well structure.Light- and heavy-hole states are described by the Luttinger Hamiltonianmatrix. The qualitative behaviour of the over-barrier scattering andresonant states is the same at variation of the shape of the quantum-wellpotential, however lifetimes of resonant states depend drastically on theshape and depth of a quantum well.
Observation of conductance doubling in an Andreev quantum point contact
Kjaergaard, M.; Nichele, F.; Suominen, H.; Nowak, M.; Wimmer, M.; Akhmerov, A.; Folk, J.; Flensberg, K.; Shabani, J.; Palmstrom, C.; Marcus, C.
One route to study the non-Abelian nature of excitations in topological superconductors is to realise gateable two dimensional (2D) semiconducting systems, with spin-orbit coupling in proximity to an s-wave superconductor. Previous work on coupling 2D electron gases (2DEG) with superconductors has been hindered by a non-ideal interface and unstable gateability. We report measurements on a gateable 2DEG coupled to superconductors through a pristine interface, and use aluminum grown in situ epitaxially on an InGaAs/InAs electron gas. We demonstrate quantization in units of 4e2 / h in a quantum point contact (QPC) in such hybrid systems. Operating the QPC as a tunnel probe, we observe a hard superconducting gap, overcoming the soft-gap problem in 2D superconductor/semiconductor systems. Our work paves way for a new and highly scalable system in which to pursue topological quantum information processing. Research supported by Microsoft Project Q and the Danish National Research Foundation.
Study of hot carrier relaxation in quantum wells by subpicosecond Raman scattering
International Nuclear Information System (INIS)
Kim, Dai-sik; Yu, P.Y.
1990-03-01
Relaxation of hot carriers excited by subpicosecond laser pulses has been studied by Raman scattering in GaAs/AlAs multiple quantum wells with well widths varying between 100 and 1000 Angstrom. The hot phonon population observed by Raman scattering is found to decrease with the well width despite the fact that the hot electron temperature remains constant. The results are explained in terms of confinement of both electrons and optical phonons in quantum wells
Tunnel-induced Dipolar Resonances in a Double-well Potential.
Schulz, Bruno; Saenz, Alejandro
2016-11-18
A system of two dipolar particles that are confined in a double-well potential and interact via a realistic isotropic interaction potential is investigated as a protoype for ultracold atoms with a magnetic dipole moment or ultracold dipolar heteronuclear diatomic molecules in double-well traps or in optical lattices. The resulting energy spectrum is discussed as a function of the dipole-dipole interaction strength. The variation of the strength of the dipole-dipole interaction is found to lead to various resonance phenomena. Among those are the previously discussed inelastic confinement-induced resonances as well as the dipole-induced resonances. It is found that the double-well potential gives rise to a new type of resonances, tunnel-induced dipolar ones. © 2016 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.
Influence of time-periodic potentials on electronic transport in double-well structure
International Nuclear Information System (INIS)
Chun-Lei, Li; Yan, Xu
2010-01-01
Within the framework of the Floquet theorem, we have investigated single-electron photon-assisted tunneling in a double-well system using the transfer matrix technique. The transmission probability displays satellite peaks on both sides of the main resonance peaks and these satellite peaks originate from emission or absorption photons. The single-electron resonance tunneling can be controlled through changing the applied harmonically potential positions, such as driven potential in wells, in barriers, or in whole double-well systems. This advantage should be useful in the optimization of the parameters of a transmission device. (condensed matter: electronic structure, electrical, magnetic, and optical properties)
Particle localization in a double-well potential by pseudo-supersymmetric fields
International Nuclear Information System (INIS)
Bagrov, V. G.; Samsonov, B. F.; Shamshutdinova, V. V.
2011-01-01
We study properties of a particle moving in a double-well potential in the two-level approximation placed in an additional external time-dependent field. Using previously established property (J. Phys. A 41, 244023 (2008)) that any two-level system possesses a pseudo-supersymmetry we introduce the notion of pseudo-supersymmetric field. It is shown that these fields, even if their time dependence is not periodical, may produce the effect of localization of the particle in one of the wells of the double-well potential.
Coherent wave packet dynamics in a double-well potential in cavity
Zheng, Li; Li, Gang; Ding, Ming-Song; Wang, Yong-Liang; Zhang, Yun-Cui
2018-02-01
We investigate the coherent wave packet dynamics of a two-level atom trapped in a symmetric double-well potential in a near-resonance cavity. Prepared on one side of the double-well potential, the atom wave packet oscillates between the left and right wells, while recoil induced by the emitted photon from the atom entangles the atomic internal and external degrees of freedom. The collapse and revival of the tunneling occurs. Adjusting the width of the wave packets, one can modify the tunneling frequency and suppress the tunneling.
Leon, R.; Swift, G.; Magness, B.; Taylor, W.; Tang, Y.; Wang, K.; Dowd, P.; Zhang, Y.
2000-01-01
Successful implementation of technology using self-forming semiconductor Quantum Dots (QDs) has already demonstrated that temperature independent Dirac-delta density of states can be exploited in low current threshold QD lasers and QD infrared photodetectors.
Aziz-Aghchegala, V. L.; Mughnetsyan, V. N.; Kirakosyan, A. A.
2018-02-01
The effect of interdiffusion and magnetic field on confined states of electron and heavy hole as well as on interband absorption spectrum in a Ga1-xAlxAs/GaAs Gaussian-shaped double quantum ring are investigated. It is shown that both interdiffusion and magnetic field lead to the change of the charge carriers' quantum states arrangement by their energies. The oscillating behavior of the electron ground state energy as a function of magnetic field induction gradually disappears with the increase of diffusion parameter due to the enhanced tunneling of electron to the central region of the ring. For the heavy hole the ground state energy oscillations are not observable in the region of the values of magnetic field induction B = 0 - 10 T . For considered transitions both the magnetic field and the interdiffusion lead to a blue-shift of the absorption spectrum and to decreasing of the absorption intensity. The obtained results indicate on the opportunity of purposeful manipulation of energy states and absorption spectrum of a Gaussian-shaped double quantum ring by means of the post growth annealing and the external magnetic field.
Anisotropic Pauli Spin Blockade of Holes in a GaAs Double Quantum Dot
Wang, Qingwen; Klochan, Oleh; Hung, Jo-Tzu; Culcer, Dimitrie; Farrer, Ian; Ritchie, David; Hamilton, Alex
Electrically defined semiconductor quantum dots are appealing systems for spin manipulation and quantum information processing. Thanks to the weak hyperfine interaction and the strong spin-orbit interaction, heavy-holes in GaAs are promising candidates for all-electrical spin manipulation. However, making stable quantum dots in GaAs has only become possible recently, mainly because of difficulties in device fabrication and device stability. Here we present electrical transport measurements of heavy-holes in a lateral double quantum dot based on a GaAs /AlxGa1 - x As heterostructure. We observe clear Pauli spin blockade and show that the lifting of the spin blockade by an external magnetic field is extremely anisotropic. Numerical calculations of heavy-hole transport through a double quantum dot in the presence of strong spin-orbit interaction demonstrate quantitative agreement with experimental results, which indicates that the observed anisotropy can be explained by the anisotropic hole g-factor and the surface Dresselhaus spin-orbit coupling.
Anisotropic emission and photon-recycling in strain-balanced quantum well solar cells
International Nuclear Information System (INIS)
Cabrera, C. I.; Enciso, A.; Contreras-Solorio, D. A.; Rimada, J. C.; Hernandez, L.; Connolly, J. P.
2014-01-01
Strain-balanced quantum well solar cells (SB-QWSCs) extend the photon absorption edge beyond that of bulk GaAs by incorporation of quantum wells in the i-region of a p–i–n device. Anisotropy arises from a splitting of the valence band due to compressive strain in the quantum wells, suppressing a transition which contributes to emission from the edge of the quantum wells. We have studied both the emission light polarized in the plane perpendicular (TM) to the quantum well which couples exclusively to the light hole transition and the emission polarized in the plane of the quantum wells (TE) which couples mainly to the heavy hole transition. It was found that the spontaneous emission rates TM and TE increase when the quantum wells are deeper. The addition of a distributed Bragg reflector can substantially increase the photocurrent while decreasing the radiative recombination current. We have examined the impact of the photon recycling effect on SB-QWSC performance. We have optimized SB-QWSC design to achieve single junction efficiencies above 30%
Anisotropic emission and photon-recycling in strain-balanced quantum well solar cells
Energy Technology Data Exchange (ETDEWEB)
Cabrera, C. I.; Enciso, A.; Contreras-Solorio, D. A. [Academic Unit of Physics, Autonomous University of Zacatecas, Czda. Solidaridad y Paseo La Bufa S/N, 98060 Zacatecas, Zac. (Mexico); Rimada, J. C. [Solar Cell Laboratory, Institute of Materials Science and Technology (IMRE), University of Havana, Zapata y G, 10400 La Habana (Cuba); Hernandez, L., E-mail: luisman@fisica.uh.cu [Faculty of Physics, University of Havana, Colina Universitaria. 10400 La Habana (Cuba); Connolly, J. P. [Nanophotonics Technology Center, Universidad Politécnica de Valencia, 46022 Valencia (Spain)
2014-04-28
Strain-balanced quantum well solar cells (SB-QWSCs) extend the photon absorption edge beyond that of bulk GaAs by incorporation of quantum wells in the i-region of a p–i–n device. Anisotropy arises from a splitting of the valence band due to compressive strain in the quantum wells, suppressing a transition which contributes to emission from the edge of the quantum wells. We have studied both the emission light polarized in the plane perpendicular (TM) to the quantum well which couples exclusively to the light hole transition and the emission polarized in the plane of the quantum wells (TE) which couples mainly to the heavy hole transition. It was found that the spontaneous emission rates TM and TE increase when the quantum wells are deeper. The addition of a distributed Bragg reflector can substantially increase the photocurrent while decreasing the radiative recombination current. We have examined the impact of the photon recycling effect on SB-QWSC performance. We have optimized SB-QWSC design to achieve single junction efficiencies above 30%.
Effect of quantum well position on the distortion characteristics of transistor laser
Piramasubramanian, S.; Ganesh Madhan, M.; Radha, V.; Shajithaparveen, S. M. S.; Nivetha, G.
2018-05-01
The effect of quantum well position on the modulation and distortion characteristics of a 1300 nm transistor laser is analyzed in this paper. Standard three level rate equations are numerically solved to study this characteristics. Modulation depth, second order harmonic and third order intermodulation distortion of the transistor laser are evaluated for different quantum well positions for a 900 MHz RF signal modulation. From the DC analysis, it is observed that optical power is maximum, when the quantum well is positioned near base-emitter interface. The threshold current of the device is found to increase with increasing the distance between the quantum well and the base-emitter junction. A maximum modulation depth of 0.81 is predicted, when the quantum well is placed at 10 nm from the base-emitter junction, under RF modulation. The magnitude of harmonic and intermodulation distortion are found to decrease with increasing current and with an increase in quantum well distance from the emitter base junction. A minimum second harmonic distortion magnitude of -25.96 dBc is predicted for quantum well position (230 nm) near to the base-collector interface for 900 MHz modulation frequency at a bias current of 20 Ibth. Similarly, a minimum third order intermodulation distortion of -38.2 dBc is obtained for the same position and similar biasing conditions.
Enhancement of Radiative Efficiency with Staggered InGaN Quantum Well Light Emitting Diodes
Energy Technology Data Exchange (ETDEWEB)
Tansu, Nelson; Dierolf, Volkmar; Huang, Gensheng; Penn, Samson; Zhao, Hongping; Liu, Guangyu; Li, Xiaohang; Poplawsky, Jonathan
2011-07-14
The technology on the large overlap InGaN QWs developed in this program is currently implemented in commercial technology in enhancing the internal quantum efficiency in major LED industry in US and Asia. The scientific finding from this work supported by the DOE enabled the implementation of this step-like staggered quantum well in the commercial LEDs.
Majorana fermion modulated nonequilibrium transport through double quantum dots
International Nuclear Information System (INIS)
Deng, Ming-Xun; Wang, Rui-Qiang; Ai, Bao-Quan; Yang, Mou; Hu, Liang-Bin; Zhong, Qing-Hu; Wang, Guang-Hui
2014-01-01
Nonequilibrium electronic transports through a double-QD-Majorana coupling system are studied with a purpose to extract the information to identify Majorana bound states (MBSs). It is found that MBSs can help form various transport processes, including the nonlocal crossed Andreev reflection, local resonant Andreev reflection, and cotunneling, depending on the relative position of two dot levels. These processes enrich the signature of average currents and noise correlations to probe the nature of MBSs. We further demonstrate the switching between the current peaks of crossed Andreev reflection and cotunneling, which is closely related to the nonlocal nature of Majorana fermions. We also propose effective physical pictures to understand these Majorana-assisted transports. - Highlights: • Majorana fermions are characterized in the signature of currents and noises. • Three types of tunneling mechanisms are realized separately. • The switching of crossed Andreev reflection and cotunneling is realized. • Concrete physical pictures are proposed to understand Majorana-assisted transports
Majorana fermion modulated nonequilibrium transport through double quantum dots
Energy Technology Data Exchange (ETDEWEB)
Deng, Ming-Xun [Laboratory of Quantum Engineering and Quantum Materials, ICMP and SPTE, South China Normal University, Guangzhou 510006 (China); Wang, Rui-Qiang, E-mail: rqwanggz@163.com [Laboratory of Quantum Engineering and Quantum Materials, ICMP and SPTE, South China Normal University, Guangzhou 510006 (China); Ai, Bao-Quan; Yang, Mou; Hu, Liang-Bin; Zhong, Qing-Hu [Laboratory of Quantum Engineering and Quantum Materials, ICMP and SPTE, South China Normal University, Guangzhou 510006 (China); Wang, Guang-Hui [Laboratory of Nanophotonic Functional Materials and Devices, South China Normal University, Guangzhou 510006 (China)
2014-06-13
Nonequilibrium electronic transports through a double-QD-Majorana coupling system are studied with a purpose to extract the information to identify Majorana bound states (MBSs). It is found that MBSs can help form various transport processes, including the nonlocal crossed Andreev reflection, local resonant Andreev reflection, and cotunneling, depending on the relative position of two dot levels. These processes enrich the signature of average currents and noise correlations to probe the nature of MBSs. We further demonstrate the switching between the current peaks of crossed Andreev reflection and cotunneling, which is closely related to the nonlocal nature of Majorana fermions. We also propose effective physical pictures to understand these Majorana-assisted transports. - Highlights: • Majorana fermions are characterized in the signature of currents and noises. • Three types of tunneling mechanisms are realized separately. • The switching of crossed Andreev reflection and cotunneling is realized. • Concrete physical pictures are proposed to understand Majorana-assisted transports.
Shallow acceptors in strained Ge/Ge1-xSix heterostructures with quantum wells
International Nuclear Information System (INIS)
Aleshkin, V.Ya.; Andreev, B.A.; Gavrilenko, V.I.; Erofeeva, I.V.; Kozlov, D.V.; Kuznetsov, O.A.
2000-01-01
Dependence of acceptor localized state energies in quantum wells (strained layers of Ge in heterostructures Ge/Ge 1-x Si x ) on the width of quantum well and position in it was studied theoretically. Spectrum of impurity absorption in the far infrared range was calculated. Comparison of the results calculated and observed photoconductivity spectra permits estimating acceptor distribution over quantum well and suggesting conclusion that acceptors can be largely concentrated near heteroboundaries. Absorption spectrum was calculated bearing in mind resonance impurity states, which permits explaining the observed specific features in the photoconductivity spectrum short-wave range by transition to resonance energy levels, bound to upper subzones of dimensional quantization [ru
Simulation of a broadband nano-biosensor based on an onion-like quantum dot–quantum well structure
International Nuclear Information System (INIS)
Absalan, H; SalmanOgli, A; Rostami, R
2013-01-01
The fluorescence resonance energy transfer is studied between modified quantum-dots and quantum-wells used as a donor and an acceptor. Because of the unique properties of quantum dots, including diverse surface modification flexibility, bio-compatibility, high quantum yields and wide absorption, their use as nano-biosensors and bio-markers used in diagnosis of cancer is suggested. The fluorescence resonance energy transfer is simulated in a quantum dot–quantum well system, where the energy can flow from donor to acceptor. If the energy transfer can be either turned on or off by a specific interaction, such as interaction with any dyes, a molecular binding event or a cleavage reaction, a sensor can be designed (under assumption that the healthy cells have a known effect or unyielding effect on output parameters while cancerous cells, due to their pandemic optical properties, can impact the fluorescence resonance energy transfer parameters). The developed nano-biosensor can operate in a wide range of wavelengths (310 – 760 nm). (laser applications in biology and medicine)
Simulation of a broadband nano-biosensor based on an onion-like quantum dot-quantum well structure
Energy Technology Data Exchange (ETDEWEB)
Absalan, H; SalmanOgli, A; Rostami, R
2013-07-31
The fluorescence resonance energy transfer is studied between modified quantum-dots and quantum-wells used as a donor and an acceptor. Because of the unique properties of quantum dots, including diverse surface modification flexibility, bio-compatibility, high quantum yields and wide absorption, their use as nano-biosensors and bio-markers used in diagnosis of cancer is suggested. The fluorescence resonance energy transfer is simulated in a quantum dot-quantum well system, where the energy can flow from donor to acceptor. If the energy transfer can be either turned on or off by a specific interaction, such as interaction with any dyes, a molecular binding event or a cleavage reaction, a sensor can be designed (under assumption that the healthy cells have a known effect or unyielding effect on output parameters while cancerous cells, due to their pandemic optical properties, can impact the fluorescence resonance energy transfer parameters). The developed nano-biosensor can operate in a wide range of wavelengths (310 - 760 nm). (laser applications in biology and medicine)
Fabrication of InN/InGaN multiple quantum well structures by RF-MBE
Energy Technology Data Exchange (ETDEWEB)
Kurouchi, M.; Muto, D.; Takado, S.; Araki, T.; Nanishi, Y. [Department of Photonics, Ritsumeikan University, 1-1-1 Noji-Higashi, Kusatsu, Shiga 525-8577 (Japan); Na, H.; Naoi, H. [Center for Promotion of The 21st Century COE Program, Ritsumeikan University, 1-1-1 Noji-Higashi, Kusatsu, Shiga 525-8577 (Japan); Miyajima, T. [Optoelectronics Laboratory, Materials Laboratories, Sony Corporation, 4-14-1 Asahi, Atsugi, Kanagawa 243-0014 (Japan)
2006-06-15
InN/InGaN multiple quantum well structures have been fabricated on InN templates grown on (0 0 0 1) sapphire substrates by radio-frequency plasma-assisted molecular beam epitaxy. The structures were confirmed by X-ray diffraction, and satellite peaks up to the 3rd order were observed. From InN/InGaN multiple quantum well structures with different well widths, photoluminescence (PL) emission from the well layers was observed at 77 K, and the PL peak energy slightly blueshifted with decreasing the well width. This dependence can be explained by combined effects of quantum size effect, quantum confined Stark effect, and band filling effect. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)
Intraband light absorption by holes in InGaAsP/InP quantum wells
Pavlov, N. V.; Zegrya, G. G.
2018-03-01
A microscopic analysis of the mechanism of intraband radiation absorption by holes with their transition to a spin-split band for quantum wells based on InGaAsP/InP solid solutions is performed within the framework of the four-band Kane model. The calculation is made for two polarizations of the incident radiation: along the crystal growth axis and in the plane of the quantum well. It is shown that this process can be the main mechanism of internal radiation losses for quantum well lasers. It is also shown that the dependence of the absorption coefficient on the width of the quantum well has a maximum at a well width from 40 to 60 A.
Binding energy of impurity states in an inverse parabolic quantum well under magnetic field
International Nuclear Information System (INIS)
Kasapoglu, E.; Sari, H.; Soekmen, I.
2007-01-01
We have investigated the effects of the magnetic field which is directed perpendicular to the well on the binding energy of the hydrogenic impurities in an inverse parabolic quantum well (IPQW) with different widths as well as different Al concentrations at the well center. The Al concentration at the barriers was always x max =0.3. The calculations were performed within the effective mass approximation, using a variational method. We observe that IPQW structure turns into parabolic quantum well with the inversion effect of the magnetic field and donor impurity binding energy in IPQW strongly depends on the magnetic field, Al concentration at the well center and well dimensions
Karaaslan, Y.; Gisi, B.; Sakiroglu, S.; Kasapoglu, E.; Sari, H.; Sokmen, I.
2018-02-01
We study the influence of electric field on the electronic energy band structure, zero-temperature ballistic conductivity and optical properties of double quantum wire. System described by double-well anharmonic confinement potential is exposed to a perpendicular magnetic field and Rashba and Dresselhaus spin-orbit interactions. Numerical results show up that the combined effects of internal and external agents cause the formation of crossing, anticrossing, camel-back/anomaly structures and the lateral, downward/upward shifts in the energy dispersion. The anomalies in the energy subbands give rise to the oscillation patterns in the ballistic conductance, and the energy shifts bring about the shift in the peak positions of optical absorption coefficients and refractive index changes.
DEFF Research Database (Denmark)
Lyssenko, V. G.; Østergaard, John Erland; Hvam, Jørn Märcher
1999-01-01
Summary form only given. We focus on the ability to control the electronic coupling in coupled quantum wells with external E-fields leading to a strong modification of the coherent light emission, in particular at a bias where a superlattice-like miniband is formed. More specifically, we investig......Summary form only given. We focus on the ability to control the electronic coupling in coupled quantum wells with external E-fields leading to a strong modification of the coherent light emission, in particular at a bias where a superlattice-like miniband is formed. More specifically, we...... investigate a MBE-grown GaAs sample with a sequence of 15 single quantum wells having a successive increase of 1 monolayer in width ranging from 62 A to 102 A and with AlGaAs barriers of 17 Å....
Shifted one-parameter supersymmetric family of quartic asymmetric double-well potentials
International Nuclear Information System (INIS)
Rosu, Haret C.; Mancas, Stefan C.; Chen, Pisin
2014-01-01
Extending our previous work (Rosu, 2014), we define supersymmetric partner potentials through a particular Riccati solution of the form F(x)=(x−c) 2 −1, where c is a real shift parameter, and work out the quartic double-well family of one-parameter isospectral potentials obtained by using the corresponding general Riccati solution. For these parametric double well potentials, we study how the localization properties of the two wells depend on the parameter of the potentials for various values of the shifting parameter. We also consider the supersymmetric parametric family of the first double-well potential in the Razavy chain of double well potentials corresponding to F(x)=1/2 sinh2x−2((1+√(2))sinh2x)/((1+√(2))cosh2x+1) , both unshifted and shifted, to test and compare the localization properties. - Highlights: • Quartic one-parameter DWs with an additional shift parameter are introduced. • Anomalous localization feature of their zero modes is confirmed at different shifts. • Razavy one-parameter DWs are also introduced and shown not to have this feature
Shifted one-parameter supersymmetric family of quartic asymmetric double-well potentials
Energy Technology Data Exchange (ETDEWEB)
Rosu, Haret C., E-mail: hcr@ipicyt.edu.mx [IPICYT, Instituto Potosino de Investigacion Cientifica y Tecnologica, Camino a la presa San José 2055, Col. Lomas 4a Sección, 78216 San Luis Potosí, S.L.P. (Mexico); Mancas, Stefan C., E-mail: mancass@erau.edu [Department of Mathematics, Embry-Riddle Aeronautical University, Daytona Beach, FL 32114-3900 (United States); Chen, Pisin, E-mail: pisinchen@phys.ntu.edu.tw [Leung Center for Cosmology and Particle Astrophysics (LeCosPA) and Department of Physics, National Taiwan University, Taipei 10617, Taiwan (China)
2014-10-15
Extending our previous work (Rosu, 2014), we define supersymmetric partner potentials through a particular Riccati solution of the form F(x)=(x−c){sup 2}−1, where c is a real shift parameter, and work out the quartic double-well family of one-parameter isospectral potentials obtained by using the corresponding general Riccati solution. For these parametric double well potentials, we study how the localization properties of the two wells depend on the parameter of the potentials for various values of the shifting parameter. We also consider the supersymmetric parametric family of the first double-well potential in the Razavy chain of double well potentials corresponding to F(x)=1/2 sinh2x−2((1+√(2))sinh2x)/((1+√(2))cosh2x+1) , both unshifted and shifted, to test and compare the localization properties. - Highlights: • Quartic one-parameter DWs with an additional shift parameter are introduced. • Anomalous localization feature of their zero modes is confirmed at different shifts. • Razavy one-parameter DWs are also introduced and shown not to have this feature.
Light-trapping for room temperature Bose-Einstein condensation in InGaAs quantum wells.
Vasudev, Pranai; Jiang, Jian-Hua; John, Sajeev
2016-06-27
We demonstrate the possibility of room-temperature, thermal equilibrium Bose-Einstein condensation (BEC) of exciton-polaritons in a multiple quantum well (QW) system composed of InGaAs quantum wells surrounded by InP barriers, allowing for the emission of light near telecommunication wavelengths. The QWs are embedded in a cavity consisting of double slanted pore (SP2) photonic crystals composed of InP. We consider exciton-polaritons that result from the strong coupling between the multiple quantum well excitons and photons in the lowest planar guided mode within the photonic band gap (PBG) of the photonic crystal cavity. The collective coupling of three QWs results in a vacuum Rabi splitting of 3% of the bare exciton recombination energy. Due to the full three-dimensional PBG exhibited by the SP2 photonic crystal (16% gap to mid-gap frequency ratio), the radiative decay of polaritons is eliminated in all directions. Due to the short exciton-phonon scattering time in InGaAs quantum wells of 0.5 ps and the exciton non-radiative decay time of 200 ps at room temperature, polaritons can achieve thermal equilibrium with the host lattice to form an equilibrium BEC. Using a SP2 photonic crystal with a lattice constant of a = 516 nm, a unit cell height of 2a=730nm and a pore radius of 0.305a = 157 nm, light in the lowest planar guided mode is strongly localized in the central slab layer. The central slab layer consists of 3 nm InGaAs quantum wells with 7 nm InP barriers, in which excitons have a recombination energy of 0.944 eV, a binding energy of 7 meV and a Bohr radius of aB = 10 nm. We take the exciton recombination energy to be detuned 35 meV above the lowest guided photonic mode so that an exciton-polariton has a photonic fraction of approximately 97% per QW. This increases the energy range of small-effective-mass photonlike states and increases the critical temperature for the onset of a Bose-Einstein condensate. With three quantum wells in the central slab layer
Stretchable Persistent Spin Helices in GaAs Quantum Wells
Dettwiler, Florian; Fu, Jiyong; Mack, Shawn; Weigele, Pirmin J.; Egues, J. Carlos; Awschalom, David D.; Zumbühl, Dominik M.
2017-07-01
the extracted spin-diffusion lengths and decay times show a significant enhancement near α =β . Since within the continuous-locking regime quantum transport is diffusive (2D) for charge while ballistic (1D) for spin and thus amenable to coherent spin control, stretchable PSHs could provide the platform for the much heralded long-distance communication ˜8 - 25 μ m between solid-state spin qubits, where the spin diffusion length for α ≠β is an order of magnitude smaller.
Stretchable Persistent Spin Helices in GaAs Quantum Wells
Directory of Open Access Journals (Sweden)
Florian Dettwiler
2017-07-01
sufficiently weak so that the extracted spin-diffusion lengths and decay times show a significant enhancement near α=β. Since within the continuous-locking regime quantum transport is diffusive (2D for charge while ballistic (1D for spin and thus amenable to coherent spin control, stretchable PSHs could provide the platform for the much heralded long-distance communication ∼8–25 μm between solid-state spin qubits, where the spin diffusion length for α≠β is an order of magnitude smaller.
National Aeronautics and Space Administration — We propose to develop a SPECTRALLY-TUNABLE INFRARED CAMERA based on quantum well infrared photodetector (QWIP) focal plane array (FPA) technology. This will build on...
National Aeronautics and Space Administration — We propose to develop a compact handheld longwave infrared camera based on quantum well infrared photodetector (QWIP) focal plane array (FPA) technology. Based on...
International Workshop on "Intersubband Transitions in Quantum Wells : Physics and Applications"
Su, Yan-Kuin
1998-01-01
The International Workshop on "Intersubband Transitions in Quantum Wells:: Physics and Applications," was held at National Cheng Kung University, in Tainan, Taiwan, December 15-18, 1997. The objective of the Workshop is to facilitate the presentation and discussion of the recent results in theoretical, experimental, and applied aspects of intersubband transitions in quantum wells and dots. The program followed the tradition initiated at the 1991 conference in Cargese-France, the 1993 conference in Whistler, B. C. Canada, and the 1995 conference in Kibbutz Ginosar, Israel. Intersubband transitions in quantum wells and quantum dots have attracted considerable attention in recent years, mainly due to the promise of various applications in the mid- and far-infrared regions (2-30 J. lm). Over 40 invited and contributed papers were presented in this four-day workshop, with topics covered most aspects of the intersubband transition phenomena including: the basic intersubband transition processes, multiquantum well i...
Intense laser field effects on a Woods-Saxon potential quantum well
Restrepo, R. L.; Morales, A. L.; Akimov, V.; Tulupenko, V.; Kasapoglu, E.; Ungan, F.; Duque, C. A.
2015-11-01
This paper presents the results of the theoretical study of the effects of non-resonant intense laser field and electric and magnetic fields on the optical properties in an quantum well (QW) make with Woods-Saxon potential profile. The electric field and intense laser field are applied along the growth direction of the Woods-Saxon quantum well and the magnetic field is oriented perpendicularly. To calculate the energy and the wave functions of the electron in the Woods-Saxon quantum well, the effective mass approximation and the method of envelope wave function are used. The confinement in the Woods-Saxon quantum well is changed drastically by the application of intense laser field or either the effect of electric and magnetic fields. The optical properties are calculated using the compact density matrix.
National Research Council Canada - National Science Library
Huang, Danhong
2001-01-01
...), the authors explained the experimentally observed zero-bias residual tunneling current A. Singh and D. A. Cardimona, Opt. Eng., v38, 1424 (1999) in quantum-well photodetectors biased by an ac voltage...
Hole subbands in quantum wells: exact solution for six-dimensional Luttinger–Kohn Hamiltonian
International Nuclear Information System (INIS)
Belykh, V G; Tulupenko, V N
2009-01-01
The exact solution for wavefunctions of six-dimensional Luttinger–Kohn Hamiltonian, describing the valence band of cubic semiconductors in the effective mass approximation, is derived. The problem of space quantization for a rectangular quantum well with finite depth is solved. The wavefunctions of carriers in the quantum well are built up of a complete set of exact wavefunctions for the bulk materials constituting the heterojunction. Obtained formulae for wavefunctions permit one to derive the analytical expression for a determinant, which nulls give the allowed energy values. Comparison of the energy spectra for the Si/Si 0.88 Ge 0.12 quantum well obtained in the framework of the developed technique, and using four-dimensional Luttinger–Kohn Hamiltonian allows us to trace clearly the impact of the spin–orbit interaction on the formation of the energy spectrum for the quantum well
Two-dimensional electron gas in monolayer InN quantum wells
International Nuclear Information System (INIS)
Pan, W.; Wang, G. T.; Dimakis, E.; Moustakas, T. D.; Tsui, D. C.
2014-01-01
We report in this letter experimental results that confirm the two-dimensional nature of the electron systems in a superlattice structure of 40 InN quantum wells consisting of one monolayer of InN embedded between 10 nm GaN barriers. The electron density and mobility of the two-dimensional electron system (2DES) in these InN quantum wells are 5 × 10 15 cm −2 (or 1.25 × 10 14 cm −2 per InN quantum well, assuming all the quantum wells are connected by diffused indium contacts) and 420 cm 2 /Vs, respectively. Moreover, the diagonal resistance of the 2DES shows virtually no temperature dependence in a wide temperature range, indicating the topological nature of the 2DES
Modelling and characterization of colliding-pulse mode-locked (CPM) quantum well lasers. [MPS1
DEFF Research Database (Denmark)
Bischoff, Svend; Brorson, S.D.; Franck, T.
1996-01-01
A theoretical and experimental study of passive colliding pulse mode-locked quantum well lasers is presented. The theoretical model for the gain dynamics is based on semi-classical density matrixequations. The gain dynamics are characterized exp...
Proton chemical shift tensors determined by 3D ultrafast MAS double-quantum NMR spectroscopy
International Nuclear Information System (INIS)
Zhang, Rongchun; Mroue, Kamal H.; Ramamoorthy, Ayyalusamy
2015-01-01
Proton NMR spectroscopy in the solid state has recently attracted much attention owing to the significant enhancement in spectral resolution afforded by the remarkable advances in ultrafast magic angle spinning (MAS) capabilities. In particular, proton chemical shift anisotropy (CSA) has become an important tool for obtaining specific insights into inter/intra-molecular hydrogen bonding. However, even at the highest currently feasible spinning frequencies (110–120 kHz), 1 H MAS NMR spectra of rigid solids still suffer from poor resolution and severe peak overlap caused by the strong 1 H– 1 H homonuclear dipolar couplings and narrow 1 H chemical shift (CS) ranges, which render it difficult to determine the CSA of specific proton sites in the standard CSA/single-quantum (SQ) chemical shift correlation experiment. Herein, we propose a three-dimensional (3D) 1 H double-quantum (DQ) chemical shift/CSA/SQ chemical shift correlation experiment to extract the CS tensors of proton sites whose signals are not well resolved along the single-quantum chemical shift dimension. As extracted from the 3D spectrum, the F1/F3 (DQ/SQ) projection provides valuable information about 1 H– 1 H proximities, which might also reveal the hydrogen-bonding connectivities. In addition, the F2/F3 (CSA/SQ) correlation spectrum, which is similar to the regular 2D CSA/SQ correlation experiment, yields chemical shift anisotropic line shapes at different isotropic chemical shifts. More importantly, since the F2/F1 (CSA/DQ) spectrum correlates the CSA with the DQ signal induced by two neighboring proton sites, the CSA spectrum sliced at a specific DQ chemical shift position contains the CSA information of two neighboring spins indicated by the DQ chemical shift. If these two spins have different CS tensors, both tensors can be extracted by numerical fitting. We believe that this robust and elegant single-channel proton-based 3D experiment provides useful atomistic-level structural and dynamical
Chang, Shu-Wei; Chang-Hasnain, Connie J.; Wang, Hailin
2005-03-01
The electromagnetically induced transparency from spin coherence has been proposed in [001] quantum wells recently. [1] The spin coherence is a potential candidate to demonstrate semiconductor-based slow light at room temperature. However, the spin coherence time is not long enough to demonstrate a significant slowdown factor in [001] quantum wells. Further, the required transition of light-hole excitons lies in the absorption of heavy-hole continuum states. The extra dephasing and absorption from these continuum states are drawbacks for slow light. Here, we propose to use [110] strained quantum wells instead of [001] quantum wells. The long spin relaxation time in [110] quantum wells at room temperature, and thus more robust spin coherence, [2] as well as the strain-induced separation [3, 4] of the light-hole exciton transition from the heavy-hole continuum absorption can help to slow down light in quantum wells. [1] T. Li, H. Wang, N. H. Kwong, and R. Binder, Opt. Express 11, 3298 (2003). [2] Y. Ohno, R. Terauchi, T. Adachi, F. Matsukura, and H. Ohno, Phys. Rev. Lett. 83, 4196 (1999). [3] C. Y. P. Chao and S. L. Chuang, Phys. Rev. B 46, 4110 (1992). [4] C. Jagannath, E. S. Koteles, J. Lee, Y. J. Chen, B. S. Elman, and J. Y. Chi, Phys. Rev. B 34, 7027 (1986).
Bao, Jianfeng; Cui, Xiaohong; Huang, Yuqing; Zhong, Jianhui; Chen, Zhong
2015-08-01
High-resolution 1H magnetic resonance spectroscopy (MRS) is generally inaccessible in red bone marrow (RBM) tissues using conventional MRS techniques. This is because signal from these tissues suffers from severe inhomogeneity in the main static B0 field originated from the intrinsic honeycomb structures in trabecular bone. One way to reduce effects of B0 field inhomogeneity is by using the intermolecular double quantum coherence (iDQC) technique, which has been shown in other systems to obtain signals insensitive to B0 field inhomogeneity. In the present study, we employed an iDQC approach to enhance the spectral resolution of RBM. The feasibility and performance of this method for achieving high resolution MRS was verified by experiments on phantoms and pig vertebral bone samples. Unsaturated fatty acid peaks which overlap in the conventional MRS were well resolved and identified in the iDQC spectrum. Quantitative comparison of fractions of three types of fatty acids was performed between iDQC spectra on the in situ RMB and conventional MRS on the extracted fat from the same RBM. Observations of unsaturated fatty acids with iDQC MRS may provide valuable information and may hold potential in diagnosis of diseases such as obesity, diabetes, and leukemia.
SU(4) Kondo effect in double quantum dots with ferromagnetic leads
Weymann, Ireneusz; Chirla, Razvan; Trocha, Piotr; Moca, Cǎtǎlin Paşcu
2018-02-01
We investigate the spin-resolved transport properties, such as the linear conductance and the tunnel magnetoresistance, of a double quantum dot device attached to ferromagnetic leads and look for signatures of the SU (4 ) symmetry in the Kondo regime. We show that the transport behavior greatly depends on the magnetic configuration of the device, and the spin-SU(2) as well as the orbital and spin-SU(4) Kondo effects become generally suppressed when the magnetic configuration of the leads varies from the antiparallel to the parallel one. Furthermore, a finite spin polarization of the leads lifts the spin degeneracy and drives the system from the SU(4) to an orbital-SU(2) Kondo state. We analyze in detail the crossover and show that the Kondo temperature between the two fixed points has a nonmonotonic dependence on the degree of spin polarization of the leads. In terms of methods used, we characterize transport by using a combination of analytical and numerical renormalization group approaches.
Four-wave mixing in an asymmetric double quantum dot molecule
Kosionis, Spyridon G.
2018-06-01
The four-wave mixing (FWM) effect of a weak probe field, in an asymmetric semiconductor double quantum dot (QD) structure driven by a strong pump field is theoretically studied. Similarly to the case of examining several other nonlinear optical processes, the nonlinear differential equations of the density matrix elements are used, under the rotating wave approximation. By suitably tuning the intensity and the frequency of the pump field as well as by changing the value of the applied bias voltage, a procedure used to properly adjust the electron tunneling coupling, we control the FWM in the same way as several other nonlinear optical processes of the system. While in the weak electron tunneling regime, the impact of the pump field intensity on the FWM is proven to be of crucial importance, for even higher rates of the electron tunneling it is evident that the intensity of the pump field has only a slight impact on the form of the FWM spectrum. The number of the spectral peaks, depends on the relation between specific parameters of the system.
Ultrafast and band-selective Auger recombination in InGaN quantum wells
International Nuclear Information System (INIS)
Williams, Kristopher W.; Monahan, Nicholas R.; Zhu, X.-Y.; Koleske, Daniel D.; Crawford, Mary H.
2016-01-01
In InGaN quantum well based light-emitting diodes, Auger recombination is believed to limit the quantum efficiency at high injection currents. Here, we report the direct observation of carrier loss from Auger recombination on a sub-picosecond timescale in a single InGaN quantum well using time-resolved photoemission. Selective excitations of different valence sub-bands reveal that the Auger rate constant decreases by two orders of magnitude as the effective hole mass decreases, confirming the critical role of momentum conservation.
International Nuclear Information System (INIS)
An, Xing-Tao; Mu, Hui-Ying; Li, Yu-Xian; Liu, Jian-Jun
2011-01-01
A four-terminal parallel double quantum dots (QDs) device is proposed to generate and detect the spin polarization in QDs. It is found that the spin accumulation in QDs and the spin-polarized currents in the upper and down leads can be generated when a bias voltage is applied between the left and right leads. It is more interesting that the spin polarization in the QDs can be detected using the upper and down leads. Moreover, the direction and magnitude of the spin polarization in the QDs, and in the upper and down leads can be tuned by the energy levels of QDs and the bias. -- Highlights: → The spin polarization in the quantum dots can be generated and controlled. → The spin polarization in quantum dots can be detected by the nonferromagnetic leads. → The system our studied is a discrete level spin Hall system.
Electron spin resonance and spin-valley physics in a silicon double quantum dot.
Hao, Xiaojie; Ruskov, Rusko; Xiao, Ming; Tahan, Charles; Jiang, HongWen
2014-05-14
Silicon quantum dots are a leading approach for solid-state quantum bits. However, developing this technology is complicated by the multi-valley nature of silicon. Here we observe transport of individual electrons in a silicon CMOS-based double quantum dot under electron spin resonance. An anticrossing of the driven dot energy levels is observed when the Zeeman and valley splittings coincide. A detected anticrossing splitting of 60 MHz is interpreted as a direct measure of spin and valley mixing, facilitated by spin-orbit interaction in the presence of non-ideal interfaces. A lower bound of spin dephasing time of 63 ns is extracted. We also describe a possible experimental evidence of an unconventional spin-valley blockade, despite the assumption of non-ideal interfaces. This understanding of silicon spin-valley physics should enable better control and read-out techniques for the spin qubits in an all CMOS silicon approach.
Spin-orbit effects in carbon-nanotube double quantum dots
DEFF Research Database (Denmark)
Weiss, S; Rashba, E I; Kuemmeth, Ferdinand
2010-01-01
We study the energy spectrum of symmetric double quantum dots in narrow-gap carbon nanotubes with one and two electrostatically confined electrons in the presence of spin-orbit and Coulomb interactions. Compared to GaAs quantum dots, the spectrum exhibits a much richer structure because of the spin...... between the dots. For the two-electron regime, the detailed structure of the spin-orbit split energy spectrum is investigated as a function of detuning between the quantum dots in a 22-dimensional Hilbert space within the framework of a single-longitudinal-mode model. We find a competing effect......-orbit interaction that couples the electron's isospin to its real spin through two independent coupling constants. In a single dot, both constants combine to split the spectrum into two Kramers doublets while the antisymmetric constant solely controls the difference in the tunneling rates of the Kramers doublets...
Electron-nuclear interaction in 13C nanotube double quantum dots
DEFF Research Database (Denmark)
Churchill, H O H; Bestwick, A J; Harlow, J W
2009-01-01
For coherent electron spins, hyperfine coupling to nuclei in the host material can either be a dominant source of unwanted spin decoherence or, if controlled effectively, a resource enabling storage and retrieval of quantum information. To investigate the effect of a controllable nuclear...... environment on the evolution of confined electron spins, we have fabricated and measured gate-defined double quantum dots with integrated charge sensors made from single-walled carbon nanotubes with a variable concentration of 13C (nuclear spin I=1/2) among the majority zero-nuclear-spin 12C atoms. We observe...... strong isotope effects in spin-blockaded transport, and from the magnetic field dependence estimate the hyperfine coupling in 13C nanotubes to be of the order of 100 ¿µeV, two orders of magnitude larger than anticipated. 13C-enhanced nanotubes are an interesting system for spin-based quantum information...
Modeling of carrier dynamics in quantum-well electroabsorption modulators
DEFF Research Database (Denmark)
Højfeldt, Sune; Mørk, Jesper
2002-01-01
We present a comprehensive drift-diffusion-type electroabsorption modulator (EAM) model. The model allows us to investigate both steady-state properties and to follow the sweep-out of carriers after pulsed optical excitation. Furthermore, it allows for the investigation of the influence that vari...... in the field near each well affect the escape of carriers from that well. Finally, we look at the influence that the separate-confinement heterostructure barriers have on the carrier sweep-out....... that various design parameters have on the device properties, in particular how they affect the carrier dynamics and the corresponding field dynamics. A number of different types of results are presented. We calculate absorption spectra and steady-state field screening due to carrier pile-up at the separate......-confinement heterobarriers. We then move on to look at carrier sweep-out upon short-pulse optical excitation. For a structure with one well, we analyze how the well position affects the carrier sweep-out and the absorption recovery. We calculate the field dynamics in a multiquantum-well structure and discuss how the changes...
Novel High Power Type-I Quantum Well Cascade Diode Lasers
2017-08-30
Novel High Power Type-I Quantum Well Cascade Diode Lasers The views, opinions and/or findings contained in this report are those of the author(s...SECURITY CLASSIFICATION OF: 1. REPORT DATE (DD-MM-YYYY) 4. TITLE AND SUBTITLE 13. SUPPLEMENTARY NOTES 12. DISTRIBUTION AVAILIBILITY STATEMENT 6... High Power Type-I Quantum Well Cascade Diode Lasers Report Term: 0-Other Email: leon.shterengas@stonybrook.edu Distribution Statement: 1-Approved
Energy Technology Data Exchange (ETDEWEB)
Duc, Huynh Thanh; Foerstner, Jens; Meier, Torsten [Department of Physics and CeOPP, University Paderborn (Germany); Priyadarshi, Shekar; Racu, Ana Maria; Pierz, Klaus; Siegner, Uwe; Bieler, Mark [Physikalisch-Technische Bundesanstalt, Braunschweig (Germany)
2010-07-01
We compute photocurrents generated by femtosecond single-color laser pulses in non-centrosymmetric semiconductor quantum wells by combining a 14 x 14 k.p band structure theory with multi-band semiconductor Bloch equations. The transient photocurrents are investigated experimentally by measuring the associated Terahertz emission. The dependencies of the photocurrent and the Terahertz emission on the excitation conditions are discussed for (110)-oriented GaAs quantum wells. The comparison between theory and experiment shows a good agreement.
Quantum properties of double kicked systems with classical translational invariance in momentum
Dana, Itzhack
2015-01-01
Double kicked rotors (DKRs) appear to be the simplest nonintegrable Hamiltonian systems featuring classical translational symmetry in phase space (i.e., in angular momentum) for an infinite set of values (the rational ones) of a parameter η . The experimental realization of quantum DKRs by atom-optics methods motivates the study of the double kicked particle (DKP). The latter reduces, at any fixed value of the conserved quasimomentum β ℏ , to a generalized DKR, the "β -DKR ." We determine general quantum properties of β -DKRs and DKPs for arbitrary rational η . The quasienergy problem of β -DKRs is shown to be equivalent to the energy eigenvalue problem of a finite strip of coupled lattice chains. Exact connections are then obtained between quasienergy spectra of β -DKRs for all β in a generically infinite set. The general conditions of quantum resonance for β -DKRs are shown to be the simultaneous rationality of η ,β , and a scaled Planck constant ℏS. For rational ℏS and generic values of β , the quasienergy spectrum is found to have a staggered-ladder structure. Other spectral structures, resembling Hofstadter butterflies, are also found. Finally, we show the existence of particular DKP wave-packets whose quantum dynamics is free, i.e., the evolution frequencies of expectation values in these wave-packets are independent of the nonintegrability. All the results for rational ℏS exhibit unique number-theoretical features involving η ,ℏS, and β .
Systematic Convergence in Applying Variational Method to Double-Well Potential
Mei, Wai-Ning
2016-01-01
In this work, we demonstrate the application of the variational method by computing the ground- and first-excited state energies of a double-well potential. We start with the proper choice of the trial wave functions using optimized parameters, and notice that accurate expectation values in excellent agreement with the numerical results can be…
Symmmetric double-well potential with Saxon-Woods tail and Pade approximations
International Nuclear Information System (INIS)
Niculescu, V.I.R.; Catana, D.
1995-01-01
In the present work we introduce a symmetric double-well potential with Woods-Saxon tail. The Woods-Saxon parts are replaced by Pade approximation.In this way the matrix elements of this potential form can be evaluated by the theory of complex functions. This results in a shorter computational time. (author). 1 fig., 1 tab., 7 refs
Brandt, Benedikt B.; Yannouleas, Constantine; Landman, Uzi
2018-05-01
Identification and understanding of the evolution of interference patterns in two-particle momentum correlations as a function of the strength of interatomic interactions are important in explorations of the nature of quantum states of trapped particles. Together with the analysis of two-particle spatial correlations, they offer the prospect of uncovering fundamental symmetries and structure of correlated many-body states, as well as opening vistas into potential control and utilization of correlated quantum states as quantum-information resources. With the use of the second-order density matrix constructed via exact diagonalization of the microscopic Hamiltonian, and an analytic Hubbard-type model, we explore here the systematic evolution of characteristic interference patterns in the two-body momentum and spatial correlation maps of two entangled ultracold fermionic atoms in a double well, for the entire attractive- and repulsive-interaction range. We uncover quantum-statistics-governed bunching and antibunching, as well as interaction-dependent interference patterns, in the ground and excited states, and interpret our results in light of the Hong-Ou-Mandel interference physics, widely exploited in photon indistinguishability testing and quantum-information science.
Characterisation of intermixed quantum well material by measurements of spontaneous emission
International Nuclear Information System (INIS)
Blay, C.
2000-01-01
The purpose of this thesis is to present experimental techniques and results of the characterisation of intermixed GaAs/AlGaAs quantum well material, specifically gain spectra and carrier lifetime measurements. Relationships are established between intermixing and internal scattering loss, quantum efficiency, quantum well gain coefficient, peak modal gain, and radiative and non-radiative recombination rates. The process of quantum well intermixing, to engineer the bandgap of quantum well material, is now a well understood and reproducible technique. It can be used in producing extended cavity lasers, multi wavelength lasers and photonic integrated circuits. However, little work has been carried out to quantify the effects of intermixing on material parameters. Until now device optimisation has been carried out by a trial and error technique. One of the most fundamental aspects of laser behaviour concerns the gain characteristics of the amplifying medium. An understanding of these characteristics is necessary if one is to make meaningful estimates of steady state or transient laser output intensity and frequency. Optimisation of these fundamental parameters allows the last bit of performance such as optical power, spectral width and modulation speeds, to be squeezed from intermixed quantum well devices. (author)
Chan, GuoXuan; Wang, Xin
2018-04-01
We consider two typical approximations that are used in the microscopic calculations of double-quantum dot spin qubits, namely, the Heitler-London (HL) and the Hund-Mulliken (HM) approximations, which use linear combinations of Fock-Darwin states to approximate the two-electron states under the double-well confinement potential. We compared these results to a case in which the solution to a one-dimensional Schr¨odinger equation was exactly known and found that typical microscopic calculations based on Fock-Darwin states substantially underestimate the value of the exchange interaction, which is the key parameter that controls the quantum dot spin qubits. This underestimation originates from the lack of tunneling of Fock-Darwin states, which is accurate only in the case with a single potential well. Our results suggest that the accuracies of the current two-dimensional molecular- orbit-theoretical calculations based on Fock-Darwin states should be revisited since underestimation could only deteriorate in dimensions that are higher than one.
Electronic properties in a quantum well structure of Weyl semimetal
International Nuclear Information System (INIS)
You, Wen-Long; Zhou, Jiao-Jiao; Wang, Xue-Feng; Oleś, Andrzej M.
2016-01-01
We investigate the confined states and transport of three-dimensional Weyl electrons around a one-dimensional external rectangular electrostatic potential. The confined states with finite transverse wave vector exist at energies higher than the half well depth or lower than the half barrier height. The rectangular potential appears completely transparent to the normal incident electrons but not otherwise. The tunneling transmission coefficient is sensitive to their incident angle and shows resonant peaks when their energy coincides with the confined spectra. In addition, for the electrons in the conduction (valence) band through a potential barrier (well), the transmission spectrum has a gap of width increasing with the incident angle. Interestingly, the electron linear zero-temperature conductance over the potential can approach zero when the Fermi energy is aligned to the top and bottom energies of the potential, when only electron beams normal to the potential interfaces can pass through. The considered structure can be used to collimate the Weyl electron beams.
Directory of Open Access Journals (Sweden)
Q.-N. Yu
2017-08-01
Full Text Available In this paper, an experimental approach to acquiring true spontaneous emission rate of optically-pumped InGaAs/GaAs quantum-well laser structure is described. This method is based on a single edge-emitting laser chip with simple sample processing. The photoluminescence spectra are measured at both facets of the edge-emitting device and transformed to the spontaneous emission rate following the theory described here. The unusual double peaks appearing in the spontaneous emission rate spectra are observed for the InGaAs/GaAs quantum-well structure. The result is analyzed in terms of Indium-rich island and Model-Solid theories. The proposed method is suitable for electrically-pumped quantum-well laser structures, as well.
A study on double flap of Wells turbine for wave power conversion
International Nuclear Information System (INIS)
Kim, J. H.; Kim, B. S.; Lee, Y. H.; Yoon, S. H.; Lee, Y. W.
2001-01-01
A numerical investigation was performed to determine the effect of airfoil on the optimum flap height using NACA 0021 wells turbine. The five double flaps which have 0.5% chord height difference were selected. A Navier-Stokes code, FLUENT, was used to calculate the flow field of the Wells turbine. The basic feature of the Wells turbine is that even though the cyclic airflow produces oscillating axial forces on the airfoil blades, the tangential force on the rotor is always in the same direction. Geometry used to define the 3-D numerical grid is based upon that of an experimental test rig. This paper tries to analyze the optimum double flap of Wells turbine with the numerical analysis
Quantum infinite square well with an oscillating wall
International Nuclear Information System (INIS)
Glasser, M.L.; Mateo, J.; Negro, J.; Nieto, L.M.
2009-01-01
A linear matrix equation is considered for determining the time dependent wave function for a particle in a one-dimensional infinite square well having one moving wall. By a truncation approximation, whose validity is checked in the exactly solvable case of a linearly contracting wall, we examine the cases of a simple harmonically oscillating wall and a non-harmonically oscillating wall for which the defining parameters can be varied. For the latter case, we examine in closer detail the dependence on the frequency changes, and we find three regimes: an adiabatic behabiour for low frequencies, a periodic one for high frequencies, and a chaotic behaviour for an intermediate range of frequencies.
Exact quantum solution for some symmetrical two-well potentials
International Nuclear Information System (INIS)
Ley-Koo, E.
1985-01-01
We construct the solutions of the Schroedinger equation for the rectangular-well, harmonic-oscillator and symmetric-linear potentials with a delta-function potential superimposed in their central positions. The odd-parity states are not affected by the presence of the delta-function potential. The even-parity states are determined by the condition that their wave functions have in the central position a fixed logarithmic derivative, which is proportional to the intensity the delta-function potential. (author)
Gu, Jun; Lin, Po-hua; Hwang, Tzonelih
2018-07-01
Recently, Zou and Qiu (Sci China Phys Mech Astron 57:1696-1702, 2014) proposed a three-step semi-quantum secure direct communication protocol allowing a classical participant who does not have a quantum register to securely send his/her secret message to a quantum participant. However, this study points out that an eavesdropper can use the double C-NOT attack to obtain the secret message. To solve this problem, a modification is proposed.
Breakdown of the quantum Hall effect in InAs/AlSb quantum wells due to counterflowing edge channels
Wees, B.J. van; Meijer, G.I.; Kuipers, J.J.; Klapwijk, T.M.; Graaf, W. van de; Borghs, G.
1995-01-01
We investigated magnetotransport in the two-dimensional electron gas (2DEG) present in InAs/AlSb quantum wells. The filling factor Ng underneath a gate electrode was reduced relative to the bulk filling factor Nb. For Ng
Quantum information entropies for a squared tangent potential well
Energy Technology Data Exchange (ETDEWEB)
Dong, Shishan [Information and Engineering College, DaLian University, 116622 (China); Sun, Guo-Hua, E-mail: sunghdb@yahoo.com [Centro Universitario Valle de Chalco, Universidad Autónoma del Estado de México, Valle de Chalco Solidaridad, Estado de México, 56615 (Mexico); Dong, Shi-Hai, E-mail: dongsh2@yahoo.com [Departamento de Física, Escuela Superior de Física y Matemáticas, Instituto Politécnico Nacional, Unidad Profesional Adolfo López Mateos, Edificio 9, México D.F. 07738 (Mexico); Department of Physics and Astronomy, Louisiana State University, Baton Rouge, LA 70803-4001 (United States); Draayer, J.P., E-mail: draayer@sura.org [Department of Physics and Astronomy, Louisiana State University, Baton Rouge, LA 70803-4001 (United States)
2014-01-10
The particle in a symmetrical squared tangent potential well is studied by examining its Shannon information entropy and standard deviations. The position and momentum information entropy densities ρ{sub s}(x), ρ{sub s}(p) and probability densities ρ(x), ρ(p) are illustrated with different potential range L and potential depth U. We present analytical position information entropies S{sub x} for the lowest two states. We observe that the sum of position and momentum entropies S{sub x} and S{sub p} expressed by Bialynicki-Birula–Mycielski (BBM) inequality is satisfied. Some eigenstates exhibit entropy squeezing in the position. The entropy squeezing in position will be compensated by an increase in momentum entropy. We also note that the S{sub x} increases with the potential range L, while decreases with the potential depth U. The variation of S{sub p} is contrary to that of S{sub x}.
Quantum information entropies for a squared tangent potential well
International Nuclear Information System (INIS)
Dong, Shishan; Sun, Guo-Hua; Dong, Shi-Hai; Draayer, J.P.
2014-01-01
The particle in a symmetrical squared tangent potential well is studied by examining its Shannon information entropy and standard deviations. The position and momentum information entropy densities ρ s (x), ρ s (p) and probability densities ρ(x), ρ(p) are illustrated with different potential range L and potential depth U. We present analytical position information entropies S x for the lowest two states. We observe that the sum of position and momentum entropies S x and S p expressed by Bialynicki-Birula–Mycielski (BBM) inequality is satisfied. Some eigenstates exhibit entropy squeezing in the position. The entropy squeezing in position will be compensated by an increase in momentum entropy. We also note that the S x increases with the potential range L, while decreases with the potential depth U. The variation of S p is contrary to that of S x .
Quantum square-well with logarithmic central spike
Znojil, Miloslav; Semorádová, Iveta
2018-01-01
Singular repulsive barrier V (x) = -gln(|x|) inside a square-well is interpreted and studied as a linear analog of the state-dependent interaction ℒeff(x) = -gln[ψ∗(x)ψ(x)] in nonlinear Schrödinger equation. In the linearized case, Rayleigh-Schrödinger perturbation theory is shown to provide a closed-form spectrum at sufficiently small g or after an amendment of the unperturbed Hamiltonian. At any spike strength g, the model remains solvable numerically, by the matching of wave functions. Analytically, the singularity is shown regularized via the change of variables x = expy which interchanges the roles of the asymptotic and central boundary conditions.
Entanglement of mixed quantum states for qubits and qudit in double photoionization of atoms
Energy Technology Data Exchange (ETDEWEB)
Chakraborty, M., E-mail: bminakshi@yahoo.com [Department of Physics, Asansol Girls’ College, Asansol 713304 (India); Sen, S. [Department of Physics, Triveni Devi Bhalotia College, Raniganj 713347 (India)
2015-08-15
Highlights: • We study tripartite entanglement between two electronic qubits and an ionic qudit. • We study bipartite entanglement between any two subsystems of a tripartite system. • We have presented a quantitative application of entangled properties in Neon atom. - Abstract: Quantum entanglement and its paradoxical properties are genuine physical resources for various quantum information tasks like quantum teleportation, quantum cryptography, and quantum computer technology. The physical characteristic of the entanglement of quantum-mechanical states, both for pure and mixed, has been recognized as a central resource in various aspects of quantum information processing. In this article, we study the bipartite entanglement of one electronic qubit along with the ionic qudit and also entanglement between two electronic qubits. The tripartite entanglement properties also have been investigated between two electronic qubits and an ionic qudit. All these studies have been done for the single-step double photoionization from an atom following the absorption of a single photon without observing spin orbit interaction. The dimension of the Hilbert space of the qudit depends upon the electronic state of the residual photoion A{sup 2+}. In absence of SOI, when Russell–Saunders coupling (L–S coupling) is applicable, dimension of the qudit is equal to the spin multiplicity of A{sup 2+}. For estimations of entanglement and mixedness, we consider the Peres–Horodecki condition, concurrence, entanglement of formation, negativity, linear and von Neumann entropies. In case of L–S coupling, all the properties of a qubit–qudit system can be predicted merely with the knowledge of the spins of the target atom and the residual photoion.
Universal Critical Power for Nonlinear Schroedinger Equations with a Symmetric Double Well Potential
International Nuclear Information System (INIS)
Sacchetti, Andrea
2009-01-01
Here we consider stationary states for nonlinear Schroedinger equations in any spatial dimension n with symmetric double well potentials. These states may bifurcate as the strength of the nonlinear term increases and we observe two different pictures depending on the value of the nonlinearity power: a supercritical pitchfork bifurcation, and a subcritical pitchfork bifurcation with two asymmetric branches occurring as the result of saddle-node bifurcations. We show that in the semiclassical limit, or for a large barrier between the two wells, the first kind of bifurcation always occurs when the nonlinearity power is less than a critical value; in contrast, when the nonlinearity power is larger than such a critical value then we always observe the second scenario. The remarkable fact is that such a critical value is a universal constant in the sense that it does not depend on the shape of the double well potential and on the dimension n.
Efficiency dip observed with InGaN-based multiple quantum well solar cells
Lai, Kunyu; Lin, G. J.; Wu, Yuhrenn; Tsai, Menglun; He, Jr-Hau
2014-01-01
The dip of external quantum efficiency (EQE) is observed on In0.15Ga0.85N/GaN multiple quantum well (MQW) solar cells upon the increase of incident optical power density. With indium composition increased to 25%, the EQE dip becomes much less noticeable. The composition dependence of EQE dip is ascribed to the competition between radiative recombination and photocurrent generation in the active region, which are dictated by quantum-confined Stark effect (QCSE) and composition fluctuation in the MQWs.
Trapping of quantum particles and light beams by switchable potential wells
Sonkin, Eduard; Malomed, Boris A.; Granot, Er'El; Marchewka, Avi
2010-09-01
We consider basic dynamical effects in settings based on a pair of local potential traps that may be effectively switched on and off, or suddenly displaced, by means of appropriate control mechanisms, such as scanning tunneling microscopy or photo-switchable quantum dots. The same models, based on the linear Schrödinger equation with time-dependent trapping potentials, apply to the description of optical planar systems designed for the switching of trapped light beams. The analysis is carried out in the analytical form, using exact solutions of the Schrödinger equation. The first dynamical problem considered in this work is the retention of a particle released from a trap which was suddenly turned off, while another local trap was switched on at a distance—immediately or with a delay. In this case, we demonstrate that the maximum of the retention rate is achieved at a specific finite value of the strength of the new trap, and at a finite value of the temporal delay, depending on the distance between the two traps. Another problem is retrapping of the bound particle when the addition of the second trap transforms the single-well setting into a double-well potential (DWP). In that case, we find probabilities for the retrapping into the ground or first excited state of the DWP. We also analyze effects entailed by the application of a kick to a bound particle, the most interesting one being a kick-induced transition between the DWP’s ground and excited states. In the latter case, the largest transition probability is achieved at a particular strength of the kick.
Trapping of quantum particles and light beams by switchable potential wells
International Nuclear Information System (INIS)
Sonkin, Eduard; Malomed, Boris A.; Granot, Er'el; Marchewka, Avi
2010-01-01
We consider basic dynamical effects in settings based on a pair of local potential traps that may be effectively switched on and off, or suddenly displaced, by means of appropriate control mechanisms, such as scanning tunneling microscopy or photo-switchable quantum dots. The same models, based on the linear Schroedinger equation with time-dependent trapping potentials, apply to the description of optical planar systems designed for the switching of trapped light beams. The analysis is carried out in the analytical form, using exact solutions of the Schroedinger equation. The first dynamical problem considered in this work is the retention of a particle released from a trap which was suddenly turned off, while another local trap was switched on at a distance--immediately or with a delay. In this case, we demonstrate that the maximum of the retention rate is achieved at a specific finite value of the strength of the new trap, and at a finite value of the temporal delay, depending on the distance between the two traps. Another problem is retrapping of the bound particle when the addition of the second trap transforms the single-well setting into a double-well potential (DWP). In that case, we find probabilities for the retrapping into the ground or first excited state of the DWP. We also analyze effects entailed by the application of a kick to a bound particle, the most interesting one being a kick-induced transition between the DWP's ground and excited states. In the latter case, the largest transition probability is achieved at a particular strength of the kick.
A Comparison of the recombination efficiency in green-emitting InGaN quantum dots and quantum wells
International Nuclear Information System (INIS)
Park, Il-Kyu; Kwon, Min-Ki; Park, Seong-Ju
2012-01-01
A comparative investigation of the recombination efficiency of green-emitting InGaN quantum dots (QDs) and quantum wells (QWs) is reported in this paper. Optical investigations using temperature dependent photoluminescence (PL) results showed that the internal quantum efficiency of InGaN QDs at room temperature was 8.7 times larger than that found for InGaN QWs because they provided dislocation-free recombination sites for the electrical charge carriers. The excitation power-dependent PL and electroluminescence results showed that the effect of the polarization induced electric field on the recombination process of electrical charge carriers in the QDs was negligibly small whereas it was dominant in the QWs. These results indicate that InGaN QDs are more beneficial than QWs in improving the luminescence efficiency of LEDs in the green spectral range.
International Nuclear Information System (INIS)
Cox, H.M.; Morais, P.C.; Hwang, D.M.; Bastos, P.; Gmitter, T.J.; Nazar, L.; Worlock, J.M.; Yablonovitch, E.; Hummel, S.G.
1988-09-01
A variety of InGaAs/InP quantum structures have been grown by vapor levitation epitaxy (VLE) and investigated by low temperature photoluminescence (PL). Excellent long-range uniformity of QW peak positions across a two-inch diameter wafer is achieved. Monolayer thickness variations in single QW's are used to establish an essentially unambiguous correlation of QW thickness with energy upshift for ultra-thin quantum wells. PL evidence is presented of the growth, for the first time by any technique, of an InGaAs/InP QW of single monolayer thickness (2.93 (angstrom)). Quantum wires were fabricated entirely by VLE as thin as one monolayer and estimated to be three unit cells wide. (author) [pt
Visualizing the solutions for the circular infinite well in quantum and classical mechanics
International Nuclear Information System (INIS)
Robinett, R.W.
1996-01-01
The classical and quantum mechanical problem of a particle in the infinite circular well has recently surfaced in two quite different manifestations: (i) the observation of open-quote open-quote electron standing waves close-quote close-quote in circular open-quote open-quote corrals close-quote close-quote of atoms adsorbed on surfaces and (ii) as a benchmark example of an integrable system for comparison to the classical and quantum chaotic behavior of the open-quote open-quote stadium billiards close-quote close-quote problem. Motivated by this, we review the quantum and classical probability distributions for both position and momentum for this familiar problem, focusing on the visualization of the quantum wave functions and classical trajectories as well as the semiclassical connections between the two. copyright 1996 American Association of Physics Teachers
Spinor-electron wave guided modes in coupled quantum wells structures by solving the Dirac equation
International Nuclear Information System (INIS)
Linares, Jesus; Nistal, Maria C.
2009-01-01
A quantum analysis based on the Dirac equation of the propagation of spinor-electron waves in coupled quantum wells, or equivalently coupled electron waveguides, is presented. The complete optical wave equations for Spin-Up (SU) and Spin-Down (SD) spinor-electron waves in these electron guides couplers are derived from the Dirac equation. The relativistic amplitudes and dispersion equations of the spinor-electron wave-guided modes in a planar quantum coupler formed by two coupled quantum wells, or equivalently by two coupled slab electron waveguides, are exactly derived. The main outcomes related to the spinor modal structure, such as the breaking of the non-relativistic degenerate spin states, the appearance of phase shifts associated with the spin polarization and so on, are shown.
Energy Technology Data Exchange (ETDEWEB)
Morrison, C., E-mail: c.morrison.2@warwick.ac.uk; Casteleiro, C.; Leadley, D. R.; Myronov, M. [Department of Physics, University of Warwick, Coventry CV4 7AL (United Kingdom)
2016-09-05
The complex quantum transport of a strained Ge quantum well (QW) modulation doped heterostructure with two types of mobile carriers has been observed. The two dimensional hole gas (2DHG) in the Ge QW exhibits an exceptionally high mobility of 780 000 cm{sup 2}/Vs at temperatures below 10 K. Through analysis of Shubnikov de-Haas oscillations in the magnetoresistance of this 2DHG below 2 K, the hole effective mass is found to be 0.065 m{sub 0}. Anomalous conductance peaks are observed at higher fields which deviate from standard Shubnikov de-Haas and quantum Hall effect behaviour due to conduction via multiple carrier types. Despite this complex behaviour, analysis using a transport model with two conductive channels explains this behaviour and allows key physical parameters such as the carrier effective mass, transport, and quantum lifetimes and conductivity of the electrically active layers to be extracted. This finding is important for electronic device applications, since inclusion of highly doped interlayers which are electrically active, for enhancement of, for example, room temperature carrier mobility, does not prevent analysis of quantum transport in a QW.
Morrison, C.; Casteleiro, C.; Leadley, D. R.; Myronov, M.
2016-09-01
The complex quantum transport of a strained Ge quantum well (QW) modulation doped heterostructure with two types of mobile carriers has been observed. The two dimensional hole gas (2DHG) in the Ge QW exhibits an exceptionally high mobility of 780 000 cm2/Vs at temperatures below 10 K. Through analysis of Shubnikov de-Haas oscillations in the magnetoresistance of this 2DHG below 2 K, the hole effective mass is found to be 0.065 m0. Anomalous conductance peaks are observed at higher fields which deviate from standard Shubnikov de-Haas and quantum Hall effect behaviour due to conduction via multiple carrier types. Despite this complex behaviour, analysis using a transport model with two conductive channels explains this behaviour and allows key physical parameters such as the carrier effective mass, transport, and quantum lifetimes and conductivity of the electrically active layers to be extracted. This finding is important for electronic device applications, since inclusion of highly doped interlayers which are electrically active, for enhancement of, for example, room temperature carrier mobility, does not prevent analysis of quantum transport in a QW.
Wide bandgap, strain-balanced quantum well tunnel junctions on InP substrates
International Nuclear Information System (INIS)
Lumb, M. P.; Yakes, M. K.; Schmieder, K. J.; Affouda, C. A.; Walters, R. J.; González, M.; Bennett, M. F.; Herrera, M.; Delgado, F. J.; Molina, S. I.
2016-01-01
In this work, the electrical performance of strain-balanced quantum well tunnel junctions with varying designs is presented. Strain-balanced quantum well tunnel junctions comprising compressively strained InAlAs wells and tensile-strained InAlAs barriers were grown on InP substrates using solid-source molecular beam epitaxy. The use of InAlAs enables InP-based tunnel junction devices to be produced using wide bandgap layers, enabling high electrical performance with low absorption. The impact of well and barrier thickness on the electrical performance was investigated, in addition to the impact of Si and Be doping concentration. Finally, the impact of an InGaAs quantum well at the junction interface is presented, enabling a peak tunnel current density of 47.6 A/cm 2 to be realized.
[Optical and electrical properties of NPB/Alq3 organic quantum well].
Huang, Jin-Zhao; Xu, Zheng; Zhao, Su-Ling; Zhang, Fu-Jun; Wang, Yong
2007-04-01
In the present paper, the organic quantum-well device similar to the type-II quantum well of inorganic semiconductor material was prepared by heat evaporation. NPB (N, N'-di-[(1-naphthalenyl)-N, N'-diphenyl]-(1,1'-biphenyl)-4,4'-diamine) and Alq3 (Tris-(8-quinolinolato) aluminum) act as the potential barrier layer and the potential well layer respectively. Besides, the single layer structure of Alq3 was prepared. In the experiments, the Forster nonradiative resonant energy transfer from the barrier layer to the well layer was identified, and the quantum well luminescence device possesses a favorable current-voltage property. The narrowing of spectrum was observed, and the spectrum shifted to blue region continuously when the applied voltage increased.
Optical properties of the Tietz-Hua quantum well under the applied external fields
Kasapoglu, E.; Sakiroglu, S.; Ungan, F.; Yesilgul, U.; Duque, C. A.; Sökmen, I.
2017-12-01
In this study, the effects of the electric and magnetic fields as well as structure parameter- γ on the total absorption coefficient, including linear and third order nonlinear absorption coefficients for the optical transitions between any two subband in the Tietz-Hua quantum well have been investigated. The optical transitions were investigated by using the density matrix formalism and the perturbation expansion method. The Tietz-Hua quantum well becomes narrower (wider) when the γ - structure parameter increases (decreases) and so the energies of the bound states will be functions of this parameter. Therefore, we can provide the red or blue shift in the peak position of the absorption coefficient by changing the strength of the electric and magnetic fields as well as the structure parameters and these results can be used to adjust and control the optical properties of the Tietz-Hua quantum well.
Wide bandgap, strain-balanced quantum well tunnel junctions on InP substrates
Energy Technology Data Exchange (ETDEWEB)
Lumb, M. P. [The George Washington University, Washington, DC 20037 (United States); US Naval Research Laboratory, Washington, DC 20375 (United States); Yakes, M. K.; Schmieder, K. J.; Affouda, C. A.; Walters, R. J. [US Naval Research Laboratory, Washington, DC 20375 (United States); González, M.; Bennett, M. F. [Sotera Defense Solutions, Annapolis Junction, Maryland 20701 (United States); US Naval Research Laboratory, Washington, DC 20375 (United States); Herrera, M.; Delgado, F. J.; Molina, S. I. [University of Cádiz, 11510, Puerto Real, Cádiz (Spain)
2016-05-21
In this work, the electrical performance of strain-balanced quantum well tunnel junctions with varying designs is presented. Strain-balanced quantum well tunnel junctions comprising compressively strained InAlAs wells and tensile-strained InAlAs barriers were grown on InP substrates using solid-source molecular beam epitaxy. The use of InAlAs enables InP-based tunnel junction devices to be produced using wide bandgap layers, enabling high electrical performance with low absorption. The impact of well and barrier thickness on the electrical performance was investigated, in addition to the impact of Si and Be doping concentration. Finally, the impact of an InGaAs quantum well at the junction interface is presented, enabling a peak tunnel current density of 47.6 A/cm{sup 2} to be realized.
International Nuclear Information System (INIS)
Chaisakul, Papichaya; Marris-Morini, Delphine; Vakarin, Vladyslav; Vivien, Laurent; Frigerio, Jacopo; Chrastina, Daniel; Isella, Giovanni
2014-01-01
We report an O-band optical modulator from a Ge/Si 0.15 Ge 0.85 multiple quantum well (MQW). Strong O-band optical modulation in devices commonly operating within E-band wavelength range can be achieved by simply decreasing the quantum well thickness. Both spectral photocurrent and optical transmission studies are performed to evaluate material characteristics and device performance from a surface-illuminated diode and a waveguide modulator, respectively. These results demonstrate the potential of using Ge/Si 0.15 Ge 0.85 MQWs for the realization of future on-chip wavelength-division multiplexing systems with optical modulators operating at different wavelengths over a wide spectral range
Magneto-Gyrotropic Photogalvanic Effects in Semiconductor Quantum Wells
Ganichev, S. D.
gas a charge current, the anomalous Hall effect, can be observed. As both magnetic fields and gyrotropic mechanisms were used authors introduced the notation "magneto-gyrotropic photogalvanic effects" for this class of phenomena. The effect is observed in GaAs and InAs low dimensional structures at free-carrier absorption of terahertz radiation in a wide range of temperatures from liquid helium temperature up to room temperature. The results are well described by the phenomenological description based on the symmetry. Experimental and theoretical analysis evidences unumbiguously that the observed photocurrents are spin-dependent. Microscopic theory of this effect based on asymmetry of photoexcitation and relaxation processes are developed being in a good agreement with experimental data. Note from Publisher: This article contains the abstract only.
The Over-Barrier Resonant States and Multi-Channel Scattering in Multiple Quantum Wells
Directory of Open Access Journals (Sweden)
A Polupanov
2016-09-01
Full Text Available We demonstrate an explicit numerical method for accurate calculation of the scattering matrix and its poles, and apply this method to describe the multi-channel scattering in the multiple quantum-wells structures. The S-matrix is continued analytically to the unphysical region of complex energy values. Results of calculations show that there exist one or more S-matrix poles, corresponding to the over-barrier resonant states critical for the effect of the absolute reflection of holes in the energy range where only the heavy ones may propagate over barriers in a structure. Light- and heavy-hole states are described by the Luttinger Hamiltonian matrix. In contrast to the single quantum-well case, at some parameters of a multiple quantum-wells structure the number of S-matrix poles may exceed that of the absolute reflection peaks, and at different values of parameters the absolute reflection peak corresponds to different resonant states. The imaginary parts of the S-matrix poles and hence the lifetimes of resonant states as well as the widths of resonant peaks of absolute reflection depend drastically on the quantum-well potential depth. In the case of shallow quantum wells there is in fact a long-living over-barrier resonant hole state.
Kurian, P; Dunston, G; Lindesay, J
2016-02-21
Macroscopic quantum effects in living systems have been studied widely in pursuit of fundamental explanations for biological energy transport and sensing. While it is known that type II endonucleases, the largest class of restriction enzymes, induce DNA double-strand breaks by attacking phosphodiester bonds, the mechanism by which simultaneous cutting is coordinated between the catalytic centers remains unclear. We propose a quantum mechanical model for collective electronic behavior in the DNA helix, where dipole-dipole oscillations are quantized through boundary conditions imposed by the enzyme. Zero-point modes of coherent oscillations would provide the energy required for double-strand breakage. Such quanta may be preserved in the presence of thermal noise by the enzyme's displacement of water surrounding the DNA recognition sequence. The enzyme thus serves as a decoherence shield. Palindromic mirror symmetry of the enzyme-DNA complex should conserve parity, because symmetric bond-breaking ceases when the symmetry of the complex is violated or when physiological parameters are perturbed from optima. Persistent correlations in DNA across longer spatial separations-a possible signature of quantum entanglement-may be explained by such a mechanism. Copyright © 2015 Elsevier Ltd. All rights reserved.
Electron transport in a double quantum ring: Evidence of an AND gate
International Nuclear Information System (INIS)
Maiti, Santanu K.
2009-01-01
We explore AND gate response in a double quantum ring where each ring is threaded by a magnetic flux φ. The double quantum ring is attached symmetrically to two semi-infinite one-dimensional metallic electrodes and two gate voltages, namely, V a and V b , are applied, respectively, in the lower arms of the two rings which are treated as two inputs of the AND gate. The system is described in the tight-binding framework and the calculations are done using the Green's function formalism. Here we numerically compute the conductance-energy and current-voltage characteristics as functions of the ring-to-electrode coupling strengths, magnetic flux and gate voltages. Our study suggests that, for a typical value of the magnetic flux φ=φ 0 /2 (φ 0 =ch/e, the elementary flux-quantum) a high output current (1) (in the logical sense) appears only if both the two inputs to the gate are high (1), while if neither or only one input to the gate is high (1), a low output current (0) results. It clearly demonstrates the AND gate behavior and this aspect may be utilized in designing an electronic logic gate.
Tunneling and energy splitting in an asymmetric double-well potential
International Nuclear Information System (INIS)
Song, Dae-Yup
2008-01-01
An asymmetric double-well potential is considered, assuming that the minima of the wells are quadratic with a frequency ω and the difference of the minima is close to a multiple of hω. A WKB wave function is constructed on both sides of the local maximum between the wells, by matching the WKB function to the exact wave functions near the classical turning points. The continuities of the wave function and its first derivative at the local maximum then give the energy-level splitting formula, which not only reproduces the instanton result for a symmetric potential, but also elucidates the appearance of resonances of tunneling in the asymmetric potential
Jin, Jinshuang; Wang, Shikuan; Zhou, Jiahuan; Zhang, Wei-Min; Yan, YiJing
2018-04-01
We investigate the dynamics of charge-state coherence in a degenerate double-dot Aharonov–Bohm interferometer with finite inter-dot Coulomb interactions. The quantum coherence of the charge states is found to be sensitive to the transport setup configurations, involving both the single-electron impurity channels and the Coulomb-assisted ones. We numerically demonstrate the emergence of a complete coherence between the two charge states, with the relative phase being continuously controllable through the magnetic flux. Interestingly, a fully coherent charge qubit arises at the double-dots electron pair tunneling resonance condition, where the chemical potential of one electrode is tuned at the center between a single-electron impurity channel and the related Coulomb-assisted channel. This pure quantum state of charge qubit could be experimentally realized at the current–voltage characteristic turnover position, where differential conductance sign changes. We further elaborate the underlying mechanism for both the real-time and the stationary charge-states coherence in the double-dot systems of study.
Recombination kinetics of photogenerated electrons in InGaAs/InP quantum wells
Tito, M. A.; Pusep, Yu. A.; Gold, A.; Teodoro, M. D.; Marques, G. E.; LaPierre, R. R.
2016-03-01
The electron transport and recombination processes of photoexcited electron-hole pairs were studied in InGaAs/InP single quantum wells. Comprehensive transport data analysis reveals a asymmetric shape of the quantum well potential where the electron mobility was found to be dominated by interface-roughness scattering. The low-temperature time-resolved photoluminescence was employed to investigate recombination kinetics of photogenerated electrons. Remarkable modification of Auger recombination was observed with variation of the electron mobility. In high mobility quantum wells, the increasing pump power resulted in a new and unexpected phenomenon: a considerably enhanced Auger non-radiative recombination time. We propose that the distribution of the photoexcited electrons over different conduction band valleys might account for this effect. In low mobility quantum wells, disorder-induced relaxation of the momentum conservation rule causes inter-valley transitions to be insignificant; as a consequence, the non-radiative recombination time is reduced with the increase in pump power. Thus, interface-roughness scattering was found responsible for both transport properties and dynamic optical response in InGaAs/InP quantum wells.
THE QUANTUM-WELL STRUCTURES OF SELF ELECTROOPTIC-EFFECT DEVICES AND GALLIUM-ARSENIDE
Directory of Open Access Journals (Sweden)
Mustafa TEMİZ
1996-02-01
Full Text Available Multiple quantum-well (MQW electroabsorptive self electro optic-effect devices (SEEDs are being extensively studied for use in optical switching and computing. The self electro-optic-effect devices which has quantum-well structures is a new optoelectronic technology with capability to obtain both optical inputs and outputs for Gallium-Arsenide/Aluminum Gallium-Arsenide (GaAs/AlGaAs electronic circuits. The optical inputs and outputs are based on quantum-well absorptive properties. These quantum-well structures consist of many thin layers of semiconductors materials of GaAs/AlGaAs which have emerged some important directions recently. The most important advance in the physics of these materials since the early days has been invention of the heterojunction structures which is based at present on GaAs technology. GaAs/AlGaAs structures present some important advantages to relevant band gap and index of refraction which allow to form the quantum-well structures and also to make semiconductor lasers, dedectors and waveguide optical switches.
Directory of Open Access Journals (Sweden)
Mustafa Kemal BAHAR
2010-06-01
Full Text Available In this study, the effects of applied electric field on the isolated square quantum well was investigated by analytic and perturbative method. The energy eigen values and wave functions in quantum well were found by perturbative method. Later, the electric field effects were investigated by analytic method, the results of perturbative and analytic method were compared. As well as both of results fit with each other, it was observed that externally applied electric field changed importantly electronic properties of the system.
Cho, Seok Hyeon; Been Heo, Su; Kang, Seong Jun
2018-03-01
We developed a double-layer structured transparent electrode for use in flexible quantum-dot light-emitting diodes (QLEDs). Silver nanowires (AgNWs) and highly conductive poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) were coated on a transparent substrate to obtain a highly conductive and flexible transparent electrode. The highly conductive PEDOT:PSS improved the surface roughness of the AgNWs transparent electrode film as well as the surface coverage area of the film. The double-layer structured transparent electrode showed superior mechanical properties than conventional indium-tin oxide (ITO) and AgNWs transparent electrodes. QLEDs with the double-layer structured transparent electrode also showed good reliability under cyclic bending conditions. These results indicate that the double-layer structured AgNWs/PEDOT:PSS transparent electrode described here is a feasible alternative to ITO transparent electrodes for flexible QLEDs.
Intrinsic errors in transporting a single-spin qubit through a double quantum dot
Li, Xiao; Barnes, Edwin; Kestner, J. P.; Das Sarma, S.
2017-07-01
Coherent spatial transport or shuttling of a single electron spin through semiconductor nanostructures is an important ingredient in many spintronic and quantum computing applications. In this work we analyze the possible errors in solid-state quantum computation due to leakage in transporting a single-spin qubit through a semiconductor double quantum dot. In particular, we consider three possible sources of leakage errors associated with such transport: finite ramping times, spin-dependent tunneling rates between quantum dots induced by finite spin-orbit couplings, and the presence of multiple valley states. In each case we present quantitative estimates of the leakage errors, and discuss how they can be minimized. The emphasis of this work is on how to deal with the errors intrinsic to the ideal semiconductor structure, such as leakage due to spin-orbit couplings, rather than on errors due to defects or noise sources. In particular, we show that in order to minimize leakage errors induced by spin-dependent tunnelings, it is necessary to apply pulses to perform certain carefully designed spin rotations. We further develop a formalism that allows one to systematically derive constraints on the pulse shapes and present a few examples to highlight the advantage of such an approach.
Efficiency studies on semipolar GaInN-GaN quantum well structures
Energy Technology Data Exchange (ETDEWEB)
Scholz, Ferdinand; Meisch, Tobias; Elkhouly, Karim [Institute of Optoelectronics, Ulm University (Germany)
2016-12-15
In order to clarify the reasons for the fairly poor electroluminescence (EL) performance of semipolar LED structures grown on patterned sapphire wafers, we have analyzed both, pure photoluminescence (PL) test structures without doping only containing 5 GaInN quantum wells and full EL test structures, all emitting at a wavelength of about 510 nm. Evaluating the PL intensity over a wide range of temperatures and excitation powers, we conclude that such quantum wells possess a fairly large internal quantum efficiency of about 20%. However, on EL test structures containing nominally the same quantum wells, we obtained an optical output power of only about 150μW at an applied current of 20 mA. This may be due partly to some thermal destruction of the quantum wells by the overgrowth with p-GaN. Even more important seems to be the not yet finally optimized p-doping of these structures. (copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)
Cho, Seungho; Jung, Sungwook; Jeong, Sanghwa; Bang, Jiwon; Park, Joonhyuck; Park, Youngrong; Kim, Sungjee
2013-01-08
Layered double hydroxide-quantum dot (LDH-QD) composites are synthesized via a room temperature LDH formation reaction in the presence of QDs. InP/ZnS (core/shell) QD, a heavy metal free QD, is used as a model constituent. Interactions between QDs (with negative zeta potentials), decorated with dihydrolipoic acids, and inherently positively charged metal hydroxide layers of LDH during the LDH formations are induced to form the LDH-QD composites. The formation of the LDH-QD composites affords significantly enhanced photoluminescence quantum yields and thermal- and photostabilities compared to their QD counterparts. In addition, the fluorescence from the solid LDH-QD composite preserved the initial optical properties of the QD colloid solution without noticeable deteriorations such as red-shift or deep trap emission. Based on their advantageous optical properties, we also demonstrate the pseudo white light emitting diode, down-converted by the LDH-QD composites.
Quantum interference effects on the intensity of the G modes in double-walled carbon nanotubes
International Nuclear Information System (INIS)
Tran, Huy Nam; Blancon, Jean-Christophe Robert; Arenal, Raul
2017-01-01
The effects of quantum interferences on the excitation dependence of the intensity of G modes have been investigated on single-walled carbon nanotubes [Duque et al., Phys. Rev. Lett.108, 117404 (2012)]. In this work, by combining optical absorption spectroscopy and Raman scattering on individual index identified double-walled carbon nanotubes, we examine the experimental excitation dependence of the intensity of longitudinal optical and transverse optical G modes of the constituent inner and outer single-walled carbon nanotubes. The observed striking dependencies are understood in terms of quantum interference effects. Considering such effects, the excitation dependence of the different components of the G modes permit to unambiguously assign each of them as originating from the longitudinal or transverse G modes of inner and outer tubes.
Optical and structural properties of MOVPE-grown GaInSb/GaSb quantum wells
Energy Technology Data Exchange (ETDEWEB)
Wagener, Viera, E-mail: viera.wagener@nmmu.ac.z [Physics Department, Nelson Mandela Metropolitan University, PO Box 77000, Port Elizabeth 6031 (South Africa); Olivier, E.J.; Botha, J.R. [Physics Department, Nelson Mandela Metropolitan University, PO Box 77000, Port Elizabeth 6031 (South Africa)
2009-12-15
This paper reports on the optical and structural properties of strained type-I Ga{sub 1-x}In{sub x}Sb quantum wells embedded in GaSb from a metal-organic vapour phase epitaxial growth perspective. Photoluminescence measurements and transmission electron microscopy were used to evaluate the effect of the growth temperature on the quality of Ga{sub 1-x}In{sub x}Sb strained layers with varied alloy compositions and thicknesses. Although the various factors contributing to the overall quality of the strained layers are difficult to separate, the quantum well characteristics are significantly altered by the growth temperature. Despite the high growth rates (approx2 nm/s), quantum wells grown at 607 deg. C display photoluminescence emissions with full-width at half-maximum of 3.5-5.0 meV for an indium solid content (x) up to 0.15.
Study of GeSn Alloy for Low Cost Monolithic Mid Infrared Quantum Well Sensor
Directory of Open Access Journals (Sweden)
Prakash PAREEK
2017-02-01
Full Text Available This paper focuses on theoretical study of Tin incorporated group IV alloys particularly GeSn and design of quantum well sensor for mid infrared sensing applications. Initially, the physics behind the selection of material for midinfrared sensor is explained. The importance of controlling strain in GeSn alloy is also explained. The physical background and motivation for incorporation of Tin(Sn in Germanium is briefly narrated. Eigen energy states for different Sn concentrations are obtained for strain compensated quantum well in G valley conduction band (GCB, heavy hole (HH band and light hole (LH band by solving coupled Schrödinger and Poisson equations simultaneously. Sn concentration dependent absorption spectra for HH- GCB transition reveals that significant absorption observed in mid infrared range (3-5 µm. So, Ge1-x Snx quantum well can be used for mid infrared sensing applications.
InGaAs Quantum Well Grown on High-Index Surfaces for Superluminescent Diode Applications
Directory of Open Access Journals (Sweden)
Wu Jiang
2010-01-01
Full Text Available Abstract The morphological and optical properties of In0.2Ga0.8As/GaAs quantum wells grown on various substrates are investigated for possible application to superluminescent diodes. The In0.2Ga0.8As/GaAs quantum wells are grown by molecular beam epitaxy on GaAs (100, (210, (311, and (731 substrates. A broad photoluminescence emission peak (~950 nm with a full width at half maximum (FWHM of 48 nm is obtained from the sample grown on (210 substrate at room temperature, which is over four times wider than the quantum well simultaneously grown on (100 substrate. On the other hand, a very narrow photoluminescence spectrum is observed from the sample grown on (311 with FWHM = 7.8 nm. The results presented in this article demonstrate the potential of high-index GaAs substrates for superluminescent diode applications.
Effect of interface disorder on quantum well excitons and microcavity polaritons
International Nuclear Information System (INIS)
Savona, Vincenzo
2007-01-01
The theory of the linear optical response of excitons in quantum wells and polaritons in planar semiconductor microcavities is reviewed, in the light of the existing experiments. For quantum well excitons, it is shown that disorder mainly affects the exciton centre-of-mass motion and is modelled by an effective Schroedinger equation in two dimensions. For polaritons, a unified model accounting for quantum well roughness and fluctuations of the microcavity thickness is developed. Numerical results confirm that polaritons are mostly affected by disorder acting on the photon component, thus confirming existing studies on the influence of exciton disorder. The polariton localization length is estimated to be in the few-micrometres range, depending on the amplitude of disorder, in agreement with recent experimental findings
InGaAsP/InP quantum well buried heterostructure waveguides produced by ion implantation
International Nuclear Information System (INIS)
Zucker, J.E.; Jones, K.L.; Tell, B.; Brown-Goebeler, K.; Joyner, C.H.; Miller, B.I.; Young, M.G.
1992-01-01
Formation of buried InGaAsP/InP quantum well wave-guides by means of phosphorus ion implantation and thermal annealing during regrowth is demonstrated. Absorption spectra of implanted and unimplanted regions are used to estimate the induced index difference, which is of the order of 1% at 1.55μm. Calculated mode intensities are in good agreement with the observed near field intensity patterns. With this etchless implant technique, we achieve a significant reduction in propagation loss for singlemode pin waveguides relative to etched semi-insulating planar buried heterostructure waveguides fabricated from the same quantum well structure. In addition to reduced scattering loss, buried quantum well waveguides produced by ion implantation are more manufacturable because fewer and less-critical processing steps are involved. (author)
Optical and structural properties of MOVPE-grown GaInSb/GaSb quantum wells
International Nuclear Information System (INIS)
Wagener, Viera; Olivier, E.J.; Botha, J.R.
2009-01-01
This paper reports on the optical and structural properties of strained type-I Ga 1-x In x Sb quantum wells embedded in GaSb from a metal-organic vapour phase epitaxial growth perspective. Photoluminescence measurements and transmission electron microscopy were used to evaluate the effect of the growth temperature on the quality of Ga 1-x In x Sb strained layers with varied alloy compositions and thicknesses. Although the various factors contributing to the overall quality of the strained layers are difficult to separate, the quantum well characteristics are significantly altered by the growth temperature. Despite the high growth rates (∼2 nm/s), quantum wells grown at 607 deg. C display photoluminescence emissions with full-width at half-maximum of 3.5-5.0 meV for an indium solid content (x) up to 0.15.
Dissipative Double-Well Potential for Cold Atoms: Kramers Rate and Stochastic Resonance.
Stroescu, Ion; Hume, David B; Oberthaler, Markus K
2016-12-09
We experimentally study particle exchange in a dissipative double-well potential using laser-cooled atoms in a hybrid trap. We measure the particle hopping rate as a function of barrier height, temperature, and atom number. Single-particle resolution allows us to measure rates over more than 4 orders of magnitude and distinguish the effects of loss and hopping. Deviations from the Arrhenius-law scaling at high barrier heights occur due to cold collisions between atoms within a well. By driving the system periodically, we characterize the phenomenon of stochastic resonance in the system response.
Dynamical properties of a particle in a time-dependent double-well potential
International Nuclear Information System (INIS)
Leonel, Edson D; McClintock, P V E
2004-01-01
Some chaotic properties of a classical particle interacting with a time-dependent double-square-well potential are studied. The dynamics of the system is characterized using a two-dimensional nonlinear area-preserving map. Scaling arguments are used to study the chaotic sea in the low-energy domain. It is shown that the distributions of successive reflections and of corresponding successive reflection times obey power laws with the same exponent. If one or both wells move randomly, the particle experiences the phenomenon of Fermi acceleration in the sense that it has unlimited energy growth
Harmonic mode-locking using the double interval technique in quantum dot lasers.
Li, Yan; Chiragh, Furqan L; Xin, Yong-Chun; Lin, Chang-Yi; Kim, Junghoon; Christodoulou, Christos G; Lester, Luke F
2010-07-05
Passive harmonic mode-locking in a quantum dot laser is realized using the double interval technique, which uses two separate absorbers to stimulate a specific higher-order repetition rate compared to the fundamental. Operating alone these absorbers would otherwise reinforce lower harmonic frequencies, but by operating together they produce the harmonic corresponding to their least common multiple. Mode-locking at a nominal 60 GHz repetition rate, which is the 10(th) harmonic of the fundamental frequency of the device, is achieved unambiguously despite the constraint of a uniformly-segmented, multi-section device layout. The diversity of repetition rates available with this method is also discussed.
Role of depth and location of minima of a double-well potential on vibrational resonance
International Nuclear Information System (INIS)
Rajasekar, S; Jeyakumari, S; Chinnathambi, V; Sanjuan, M A F
2010-01-01
We report our investigation into the role of depth and location of minima of a double-well potential on vibrational resonance in both underdamped and overdamped Duffing oscillators. The systems are driven by both low- and high-frequency periodic forces. We obtain theoretical expressions for the amplitude g of the high-frequency force at which resonances occur. The depth and location of the minima of the potential wells have a distinct effect on vibrational resonance in the underdamped and overdamped cases. In the underdamped system at least one resonance and at most two resonances occur and the number of resonances can be altered by varying the depth and location of the minima of the potential wells. We show that in the overdamped system there is always one and only one resonance, and the value of g at which resonance occurs is independent of the depth of the wells, but varies linearly with the locations of the minima of the wells.
Luminescence spectra of CdSe/ZnSe double layers of quantum dots
Energy Technology Data Exchange (ETDEWEB)
Reznitsky, Alexander; Permogorov, Sergei; Korenev, Vladimir V.; Sedova, Irina; Sorokin, Sergey; Sitnikova, Alla; Ivanov, Sergei [A.F. Ioffe Physico-Technical Institute, Polytekhnicheskaya 26, 194021 St. Petersburg (Russian Federation); Klochikhin, Albert [B.P. Konstantinov Nuclear Physics Institute, St. Petersburg (Russian Federation)
2009-12-15
We have studied the emission spectra and structural properties of double CdSe/ZnSe quantum dot (QD) sheet structures grown by molecular beam epitaxy in order to elucidate the mechanisms of the electronic and strain field interaction between the QD planes. The thickness of the ZnSe barrier separating the CdSe sheets was in the range of 10-60 monolayers (ML) in the set of samples studied. We have found that coupling between dots in adjacent layers becomes relatively strong in CdSe/ZnSe double layers structures with 25-27 ML barrier, while it is rather weak when the barrier thickness exceeds 30 ML. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)
Three-dimensional gravity and Drinfel'd doubles: Spacetimes and symmetries from quantum deformations
International Nuclear Information System (INIS)
Ballesteros, Angel; Herranz, Francisco J.; Meusburger, Catherine
2010-01-01
We show how the constant curvature spacetimes of 3d gravity and the associated symmetry algebras can be derived from a single quantum deformation of the 3d Lorentz algebra sl(2,R). We investigate the classical Drinfel'd double of a 'hybrid' deformation of sl(2,R) that depends on two parameters (η,z). With an appropriate choice of basis and real structure, this Drinfel'd double agrees with the 3d anti-de Sitter algebra. The deformation parameter η is related to the cosmological constant, while z is identified with the inverse of the speed of light and defines the signature of the metric. We generalise this result to de Sitter space, the three-sphere and 3d hyperbolic space through analytic continuation in η and z; we also investigate the limits of vanishing η and z, which yield the flat spacetimes (Minkowski and Euclidean spaces) and Newtonian models, respectively.
Exciton dynamics in near-surface InGaN quantum wells coupled to colloidal nanocrystals
DEFF Research Database (Denmark)
Kopylov, Oleksii; Shirazi, Roza; Yvind, Kresten
2013-01-01
We study non-radiative energy transfer between InGaN quantum wells and colloidal InP nanocrystals separated by sub-10nm distance. A significant non-radiative energy transfer between the two layers is accompanied by reduced surface recombination in InGaN.......We study non-radiative energy transfer between InGaN quantum wells and colloidal InP nanocrystals separated by sub-10nm distance. A significant non-radiative energy transfer between the two layers is accompanied by reduced surface recombination in InGaN....
International Nuclear Information System (INIS)
Wu, Jinghe; Guo, Kangxian; Liu, Guanghui
2014-01-01
Polaron effects on nonlinear optical rectification in asymmetrical Gaussian potential quantum wells are studied by the effective mass approximation and the perturbation theory. The numerical results show that nonlinear optical rectification coefficients are strongly dependent on the barrier hight V 0 of the Gaussian potential quantum wells, the range L of the confinement potential and the electric field F. Besides, the numerical results show that no matter how V 0 , L and F change, taking into consideration polaron effects, the optical rectification coefficients χ 0 (2) get greatly enhanced.
Pseudo-square AlGaN/GaN quantum wells for terahertz absorption
International Nuclear Information System (INIS)
Beeler, M.; Bellet-Amalric, E.; Monroy, E.; Bougerol, C.
2014-01-01
THz intersubband transitions are reported down to 160 μm within AlGaN/GaN heterostructures following a 4-layer quantum well design. In such a geometry, the compensation of the polarization-induced internal electric field is obtained through creating a gradual increase in polarization field throughout the quantum “trough” generated by three low-Al-content layers. The intersubband transitions show tunable absorption with respect to doping level as well as geometrical variations which can be regulated from 53 to 160 μm. They also exhibit tunnel-friendly designs which can be easily integrated into existing intersubband device architectures.
Electron-electron interaction in p-SiGe/Ge quantum wells
International Nuclear Information System (INIS)
Roessner, Benjamin; Kaenel, Hans von; Chrastina, Daniel; Isella, Giovanni; Batlogg, Bertram
2005-01-01
The temperature dependent magnetoresistance of high mobility p-SiGe/Ge quantum wells is studied with hole densities ranging from 1.7 to 5.9 x 10 11 cm -2 . At magnetic fields below the onset of quantum oscillations that reflect the high mobility values (up to 75000 cm 2 /Vs), we observe the clear signatures of electron-electron interaction. We compare our experiment with the theory of electron-electron interaction including the Zeeman band splitting. The observed magnetoresistance is well explained as a superposition of band structure induced positive magnetoresistance and the negative magntoresistance due to the electron-electron interaction effect
Optical transitions in Ge/SiGe multiple quantum wells with Ge-rich barriers
Bonfanti, M.; Grilli, E.; Guzzi, M.; Virgilio, M.; Grosso, G.; Chrastina, D.; Isella, G.; von Känel, H.; Neels, A.
2008-07-01
Direct-gap and indirect-gap transitions in strain-compensated Ge/SiGe multiple quantum wells with Ge-rich SiGe barriers have been studied by optical transmission spectroscopy and photoluminescence experiments. An sp3d5s∗ tight-binding model has been adopted to interpret the experimental results. Photoluminescence spectra and their comparison with theoretical calculations prove the existence of type-I band alignment in compressively strained Ge quantum wells grown on relaxed Ge-rich SiGe buffers. The high quality of the transmission spectra opens up other perspectives for application of these structures in near-infrared optical modulators.
Exciton polaritons and their one-dimensional localization in disordered structure with quantum wells
International Nuclear Information System (INIS)
Kosobukin, V.A.
2003-01-01
The Anderson light localization theory by disordered ultrathin layers (quantum wells), uniform in lateral directions and featuring intrinsic optical resonances, is presented. A model of the layers with delta-function resonance dielectric polarization is suggested for solution of the multiple scattering problem. Allowance made for interlayer disorder, one- and two-phoron characteristics of electromagnetic transfer, i.e. average energy density and the length of the Anderson light localization were calculated in analytical form. It is shown that in disordered structure average electromagnetic field is propagated as polaritons formed due to excessive emission of excitons between the quantum wells [ru
International Nuclear Information System (INIS)
Christian, George M.; Hammersley, Simon; Davies, Matthew J.; Dawson, Philip; Kappers, Menno J.; Massabuau, Fabien C.P.; Oliver, Rachel A.; Humphreys, Colin J.
2016-01-01
We report on the effects of varying the number of quantum wells (QWs) in an InGaN/GaN multiple QW (MQW) structure containing a 23 nm thick In0.05Ga0.95N prelayer doped with Si. The calculated conduction and valence bands for the structures show an increasing total electric field across the QWs with increasing number of QWs. This is due to the reduced strength of the surface polarisation field, which opposes the built-in field across the QWs, as its range is increased over thicker samples. Low temperature photoluminescence (PL) measurements show a red shifted QW emission peak energy, which is attributed to the enhanced quantum confined Stark effect with increasing total field strength across the QWs. Low temperature PL time decay measurements and room temperature internal quantum efficiency (IQE) measurements show decreasing radiative recombination rates and decreasing IQE, respectively, with increasing number of QWs. These are attributed to the increased spatial separation of the electron and hole wavefunctions, consistent with the calculated band profiles. It is also shown that, for samples with fewer QWs, the reduction of the total field across the QWs makes the radiative recombination rate sufficiently fast that it is competitive with the efficiency losses associated with the thermal escape of carriers. (copyright 2016 The Authors. Phys. Status Solidi C published by WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)
Interfacial properties at the organic-metal interface probed using quantum well states
Lin, Meng-Kai; Nakayama, Yasuo; Wang, Chin-Yung; Hsu, Jer-Chia; Pan, Chih-Hao; Machida, Shin-ichi; Pi, Tun-Wen; Ishii, Hisao; Tang, S.-J.
2012-10-01
Using angle-resolved photoemission spectroscopy, we investigated the interfacial properties between the long-chain normal-alkane molecule n-CH3(CH2)42CH3 [tetratetracontane (TTC)] and uniform Ag films using the Ag quantum well states. The entire quantum well state energy band dispersions were observed to shift toward the Fermi level with increasing adsorption coverage of TTC up to 1 monolayer (ML). However, the energy shifts upon deposition of 1 ML of TTC are approximately inversely dependent on the Ag film thickness, indicating a quantum-size effect. In the framework of the pushback and image-force models, we applied the Bohr-Sommerfeld quantization rule with the modified Coulomb image potential for the phase shift at the TTC/Ag interface to extract the dielectric constant for 1 ML of TTC.
Spin-related transport phenomena in HgTe-based quantum well structures
International Nuclear Information System (INIS)
Koenig, Markus
2007-12-01
Within the scope of this thesis, spin related transport phenomena have been investigated in HgTe/Hg 0.3 Cd 0.7 Te quantum well structures. In our experiments, the existence of the quantum spin Hall (QSH) state was successfully demonstrated for the first time and the presented results provide clear evidence for the charge transport properties of the QSH state. Our experiments provide the first direct observation of the Aharonov-Casher (AC) effect in semiconductor structures. In conclusion, HgTe quantum well structures have proven to be an excellent template for studying spin-related transport phenomena: The QSH relies on the peculiar band structure of the material and the existence of both the spin Hall effect and the AC effect is a consequence of the substantial spin-orbit interaction. (orig.)
Spin-related transport phenomena in HgTe-based quantum well structures
Energy Technology Data Exchange (ETDEWEB)
Koenig, Markus
2007-12-15
Within the scope of this thesis, spin related transport phenomena have been investigated in HgTe/Hg{sub 0.3}Cd{sub 0.7}Te quantum well structures. In our experiments, the existence of the quantum spin Hall (QSH) state was successfully demonstrated for the first time and the presented results provide clear evidence for the charge transport properties of the QSH state. Our experiments provide the first direct observation of the Aharonov-Casher (AC) effect in semiconductor structures. In conclusion, HgTe quantum well structures have proven to be an excellent template for studying spin-related transport phenomena: The QSH relies on the peculiar band structure of the material and the existence of both the spin Hall effect and the AC effect is a consequence of the substantial spin-orbit interaction. (orig.)
Faraday rotation in multiple quantum wells of GaAs/AlGaAs
International Nuclear Information System (INIS)
Dudziak, E.; Bozym, J.; Prochnik, D.; Wasilewski, Z.R.
1996-01-01
We report on the results of first measurements on the Faraday rotation of modulated n-doped multiple quantum wells of GaAs/Al x Ga 1-x As (x = 0.312). The measurements have been performed in the magnetic fields up to 13 T at the temperature of 2 K, in the spectral region of interband transitions. A rich structure of magneto-excitons has been found in the measured spectra. Faraday rotation (phase) measurements are proposed as an alternative method to the photoluminescence excitation for investigations of magneto-excitons in quantum wells. The dependence of measured Faraday rotation on magnetic field and hypothetical connections with quantum Hall effect are also discussed. (author)
Effective one-band approach for the spin splittings in quantum wells
Alekseev, P. S.; Nestoklon, M. O.
2017-03-01
The spin-orbit interaction of two-dimensional electrons in quantum wells grown from the III-V semiconductors consists of two parts with different symmetry: the Bychkov-Rashba and the Dresselhaus terms. The last term is usually attributed to the bulk spin-orbit Hamiltonian which reflects the Td symmetry of the zincblende lattice. While it is known that the quantum well interfaces may also contribute to the Dresselhaus term, the exact structure and relative importance of the interface and bulk contributions are not well understood. To deal with this problem, we perform tight-binding calculations of the spin splittings of the electron levels in [100] GaAs/AlGaAs quantum wells. We show that the obtained spin splittings can be adequately described within the one-band electron Hamiltonian containing, together with the bulk contribution, the two interface contributions to the Dresselhaus term. The magnitude of the interface contribution to the spin-orbit interaction for sufficiently narrow quantum wells is of the same order as the bulk contribution.
International Nuclear Information System (INIS)
Yan, Wei; Qu, Junle; Niu, H B
2014-01-01
We perform a time-dependent analysis of the formation and stable propagation of an ultraslow optical soliton pair, and four-wave mixing (FWM) via tunable Fano interference in double-cascade type semiconductor multiple quantum wells (SMQWs). By using the probability amplitude method to describe the interaction of the system, we demonstrate that the electromagnetically induced transparency (EIT) can be controlled by Fano interference in the linear case and the strength of Fano interference has an important effect on the group velocity and amplitude of the soliton pair in the nonlinear case. Then, when the signal field is removed, the dynamic FWM process is analyzed in detail, and we find that the strength of Fano interference also has an important effect on the FWM’s efficiency: the maximum FWM efficiency is ∼28% in appropriate conditions. The investigations are promising for practical applications in optical devices and optical information processing for solid systems. (paper)
Output Power Limitations and Improvements in Passively Mode Locked GaAs/AlGaAs Quantum Well Lasers.
Tandoi, Giuseppe; Ironside, Charles N; Marsh, John H; Bryce, A Catrina
2012-03-01
We report a novel approach for increasing the output power in passively mode locked semiconductor lasers. Our approach uses epitaxial structures with an optical trap in the bottom cladding that enlarges the vertical mode size to scale the pulse saturation energy. With this approach we demonstrate a very high peak power of 9.8 W per facet, at a repetition rate of 6.8 GHz and with pulse duration of 0.71 ps. In particular, we compare two GaAs/AlGaAs epilayer designs, a double quantum well design operating at 830 nm and a single quantum well design operating at 795 nm, with vertical mode sizes of 0.5 and 0.75 μm, respectively. We show that a larger mode size not only shifts the mode locking regime of operation towards higher powers, but also produces other improvements in respect of two main failure mechanisms that limit the output power: the catastrophic optical mirror damage and the catastrophic optical saturable absorber damage. For the 830 nm material structure, we also investigate the effect of non-absorbing mirrors on output power and mode locked operation of colliding pulse mode locked lasers.
International Nuclear Information System (INIS)
Luque, N.B.; Woelki, S.; Henderson, D.; Schmickler, W.
2011-01-01
Highlights: · We augment a double-layer model based on integral equations by calculating the interaction parameters with the electrode from quantum density functional theory · Explicit model calculations for Ag(1 1 1) in aqueous solutions give at least qualitatively good results for the particle profiles · Ours is the only method which allows the calculation of capacity-charge characteristics. · We obtain reasonable values for the Helmholtz (inner-layer) capacity. - Abstract: We have complemented the singlet reference interaction site model for the electric double layer by quantum chemical calculations for the interaction of ions and solvents with an electrode. Specific calculations have been performed for an aqueous solution of NaCl in contact with a Ag(1 1 1) electrode. The particle profiles near the electrode show the specific adsorption of Cl - ions, but not of Na + , and are at least in qualitative agreement with those obtained by molecular dynamics. Including the electronic response of the silver surface into the model results in reasonable capacity-charge characteristics.
Ultraclean single, double, and triple carbon nanotube quantum dots with recessed Re bottom gates
Jung, Minkyung; Schindele, Jens; Nau, Stefan; Weiss, Markus; Baumgartner, Andreas; Schoenenberger, Christian
2014-03-01
Ultraclean carbon nanotubes (CNTs) that are free from disorder provide a promising platform to manipulate single electron or hole spins for quantum information. Here, we demonstrate that ultraclean single, double, and triple quantum dots (QDs) can be formed reliably in a CNT by a straightforward fabrication technique. The QDs are electrostatically defined in the CNT by closely spaced metallic bottom gates deposited in trenches in Silicon dioxide by sputter deposition of Re. The carbon nanotubes are then grown by chemical vapor deposition (CVD) across the trenches and contacted using conventional electron beam lithography. The devices exhibit reproducibly the characteristics of ultraclean QDs behavior even after the subsequent electron beam lithography and chemical processing steps. We demonstrate the high quality using CNT devices with two narrow bottom gates and one global back gate. Tunable by the gate voltages, the device can be operated in four different regimes: i) fully p-type with ballistic transport between the outermost contacts (over a length of 700 nm), ii) clean n-type single QD behavior where a QD can be induced by either the left or the right bottom gate, iii) n-type double QD and iv) triple bipolar QD where the middle QD has opposite doping (p-type). Research at Basel is supported by the NCCR-Nano, NCCR-QIST, ERC project QUEST, and FP7 project SE2ND.
Afanasyev, Andrey
2017-04-01
Numerical modelling of multiphase flows in porous medium is necessary in many applications concerning subsurface utilization. An incomplete list of those applications includes oil and gas fields exploration, underground carbon dioxide storage and geothermal energy production. The numerical simulations are conducted using complicated computer programs called reservoir simulators. A robust simulator should include a wide range of modelling options covering various exploration techniques, rock and fluid properties, and geological settings. In this work we present a recent development of new options in MUFITS code [1]. The first option concerns modelling of multiphase flows in double-porosity double-permeability reservoirs. We describe internal representation of reservoir models in MUFITS, which are constructed as a 3D graph of grid blocks, pipe segments, interfaces, etc. In case of double porosity reservoir, two linked nodes of the graph correspond to a grid cell. We simulate the 6th SPE comparative problem [2] and a five-spot geothermal production problem to validate the option. The second option concerns modelling of flows in porous medium coupled with flows in horizontal wells that are represented in the 3D graph as a sequence of pipe segments linked with pipe junctions. The well completions link the pipe segments with reservoir. The hydraulics in the wellbore, i.e. the frictional pressure drop, is calculated in accordance with Haaland's formula. We validate the option against the 7th SPE comparative problem [3]. We acknowledge financial support by the Russian Foundation for Basic Research (project No RFBR-15-31-20585). References [1] Afanasyev, A. MUFITS Reservoir Simulation Software (www.mufits.imec.msu.ru). [2] Firoozabadi A. et al. Sixth SPE Comparative Solution Project: Dual-Porosity Simulators // J. Petrol. Tech. 1990. V.42. N.6. P.710-715. [3] Nghiem L., et al. Seventh SPE Comparative Solution Project: Modelling of Horizontal Wells in Reservoir Simulation
Effect of the quantum well thickness on the performance of InGaN photovoltaic cells
Energy Technology Data Exchange (ETDEWEB)
Redaelli, L.; Mukhtarova, A.; Valdueza-Felip, S.; Ajay, A.; Durand, C.; Eymery, J.; Monroy, E. [Université Grenoble Alpes, 38000 Grenoble (France); CEA-CNRS Group «Nanophysique et semiconducteurs», CEA-Grenoble, INAC/SP2M, 17 avenue des Martyrs, 38054 Grenoble cedex 9 (France); Bougerol, C.; Himwas, C. [Université Grenoble Alpes, 38000 Grenoble (France); CEA-CNRS Group «Nanophysique et semiconducteurs», Institut Néel-CNRS, 25 avenue des Martyrs, 38042 Grenoble cedex 9 (France); Faure-Vincent, J. [Université Grenoble Alpes, 38000 Grenoble (France); CNRS, INAC-SPRAM, F-38000 Grenoble (France); CEA, INAC-SPRAM, F-38000 Grenoble (France)
2014-09-29
We report on the influence of the quantum well thickness on the effective band gap and conversion efficiency of In{sub 0.12}Ga{sub 0.88}N/GaN multiple quantum well solar cells. The band-to-band transition can be redshifted from 395 to 474 nm by increasing the well thickness from 1.3 to 5.4 nm, as demonstrated by cathodoluminescence measurements. However, the redshift of the absorption edge is much less pronounced in absorption: in thicker wells, transitions to higher energy levels dominate. Besides, partial strain relaxation in thicker wells leads to the formation of defects, hence degrading the overall solar cell performance.
On the relationship between large order graphs and instantons for the double well oscillator
International Nuclear Information System (INIS)
Mueller, A.H.; Triantafyllopoulos, D.N.
2001-01-01
The double well oscillator is used as a QCD-like model for studying the relationship between large order graphs and the instanton-anti-instanton solution. We derive an equation for the perturbative coefficients of the ground state energy when the number of 3 and/or 4-vertices is fixed and large. These coefficients are determined in terms of an exact 'bounce' solution. When the number of 4-vertices is analytically continued to be near the negative of half the number of 3-vertices the bounce solution approaches the instanton-anti-instanton solution and determines leading Borel singularity
Lima, L. S.; Miranda, L. L. B.
2018-01-01
We have used the Itô's stochastic differential equation for the double well with additive white noise as a mathematical model for price dynamics of the financial market. We have presented a model which allows us to test within the same framework the comparative explanatory power of rational agents versus irrational agents, with respect to the facts of financial markets. We have obtained the mean price in terms of the β parameter that represents the force of the randomness term of the model.
Ultracold atoms in a cavity-mediated double-well system
International Nuclear Information System (INIS)
Larson, Jonas; Martikainen, Jani-Petri
2010-01-01
We study ground-state properties and dynamics of a dilute ultracold atomic gas in a double-well potential. The Gaussian barrier separating the two wells derives from the interaction between the atoms and a quantized field of a driven Fabry-Perot cavity. Due to intrinsic atom-field nonlinearity, several interesting phenomena arise which are the focus of this work. For the ground state, there is a critical pumping amplitude in which the atoms self-organize and the intra-cavity-field amplitude drastically increases. In the dynamical analysis, we show that the Josephson oscillations depend strongly on the atomic density and may be greatly suppressed within certain regimes, reminiscent of self-trapping of Bose-Einstein condensates in double-well setups. This pseudo-self-trapping effect is studied within a mean-field treatment valid for large atom numbers. For small numbers of atoms, we consider the analogous many-body problem and demonstrate a collapse-revival structure in the Josephson oscillations.
Luminescence and ultrafast phenomena in InGaN multiple quantum wells
International Nuclear Information System (INIS)
Viswanath, Annamraju Kasi; Lee, J.I.; Kim, S.T.; Yang, G.M.; Lee, H.J.; Kim, Dongho
2007-01-01
High quality In 0.13 Ga 0.87 N/GaN multiple quantum wells (MQWs) on (0001) sapphire substrate were fabricated by MOCVD method. The quantum well thickness is as thin as 10 A, and the barrier thickness is 50 A. We have investigated these ultrathin MQWs by continuous wave (cw) and time-resolved spectroscopy in the picosecond time scales in a wide temperature range from 10 to 290 K. In the luminescence spectrum at 10 K, we observed a broad peak at 3.134 eV which was attributed to the quantum wells emission of InGaN. The full width at half maximum of this peak was 129 meV at 10 K and the broadening at low temperatures which was mostly inhomogeneous was thought to be due to compositional fluctuations and interfacial disorder in the alloy. We also observed an intense and narrow peak at 3.471 eV due to the GaN barrier. The temperature dependence of the luminescence was studied and the peak positions and the intensities of the different peaks were obtained. The activation energy of the InGaN quantum well emission peak was estimated as 69 meV. From the measurements of luminescence intensities and lifetimes at various temperatures, radiative and non-radiative recombination lifetimes were deduced. The results were explained by considering only the localization of the excitons due to potential fluctuations
Improvement of temperature-stability in a quantum well laser with asymmetric barrier layers
DEFF Research Database (Denmark)
Zhukov, Alexey E.; Kryzhanovskaya, Natalia V.; Zubov, Fedor I.
2012-01-01
We fabricated and tested a quantum well laser with asymmetric barrier layers. Such a laser has been proposed earlier to suppress bipolar carrier population in the optical confinement layer and thus to improve temperature-stability of the threshold current. As compared to the conventional reference...
International Nuclear Information System (INIS)
Chemla, D.S.
1993-01-01
This article reviews recent investigations of nonlinear optical processes in semiconductors. Section II discusses theory of coherent wave mixing in semiconductors, with emphasis on resonant excitation with only one exciton state. Section III reviews recent experimental investigations of amplitude and phase of coherent wave-mixing resonant with quasi-2d excitons in GaAs quantum wells
International Nuclear Information System (INIS)
Helgesen, P.
1992-04-01
In this work the author investigate the subband nature of multiple quantum well structures by photoconductance spectroscopy, optical absorption measurements and tunneling experiments. Both interband and intraband transitions have been studied. The work is aimed at making an infrared detector using wide band gap semiconductors. 14 refs
Polarisation of the spontaneous emission from nonpolar and semipolar InGaN quantum wells
Energy Technology Data Exchange (ETDEWEB)
Schade, Lukas; Schwarz, Ulrich [Department of Microsystems Engineering, University of Freiburg (IMTEK) (Germany); Fraunhofer Institute for Applied Solid State Physics (IAF) (Germany); Ploch, Simon; Wernicke, Tim [Institute of Solid State Physics, Technical University Berlin (Germany); Knauer, Arne; Hoffmann, Veit; Weyers, Markus [Ferdinand-Braun-Institute (FBH) (Germany); Kneissl, Michael [Institute of Solid State Physics, Technical University Berlin (Germany); Ferdinand-Braun-Institute (FBH) (Germany)
2011-07-01
Spontaneously emitted light stemming from semipolar and nonpolar InGaN quantum wells is polarized. This property is a consequence of the broken in-plane symmetry of non c-plane wurtzite quantum wells. We studied the polarized photoluminescence of semipolar and nonpolar InGaN/InGaN multi quantum wells grown on low defect density GaN substrates with a setup for confocal microscopy. For excitation of charge carriers we use a 375 nm diode laser. The photoluminescence is collected with an objective of small NA, to avoid polarisation scrambling, and analyzed with a broadband polarizer and a spectrometer. The experimental results are compared to k.p band structure calculations for semipolar and nonpolar InGaN quantum wells. These simulations provide the polarisation degree of the confined states of the valence band and their energetic splitting. Next, from the thermal occupation the polarized spectra are calculated. The comparison with experimental results allows the determination of the valence subband splitting. Our experiments show a splitting of the two topmost valence subbands in nonpolar direction which is larger than predicted.