WorldWideScience

Sample records for double heterostructure lasers

  1. GaInAsP-InP Double Heterostructure Lasers on Si Substrate Grown by LP-MOCVD

    National Research Council Canada - National Science Library

    Razeghi, M

    1993-01-01

    ... #N00014-93-1-0176 'GaInAsP-InP double heterostructure lasers on Si substrate grown by MOVCD'. In order to achieve this goal of the contract, the CQD research group split the divided research work into three phases (with specific tasks...

  2. Double-heterostructure PbSnTe lasers grown by molecular-beam epitaxy with cw operation up to 114 K

    International Nuclear Information System (INIS)

    Walpole, J.N.; Calawa, A.R.; Harman, T.C.; Groves, S.H.

    1976-01-01

    Double-heterostructure Pb/sub 1-x/Sn/sub x/Te lasers with active regions of Pb 0 . 782 Sn 0 . 218 Te have been grown by molecular-beam epitaxy which operate cw up to heat-sink temperatures of 114 0 K. Temperature tuning of the emission from 15.9 to 8.54 μm wavelength is obtained, with emission at 77 0 K near 11.5 μm. The current-voltage characteristics show an abrupt change in slope at threshold, indicating high incremental internal quantum efficiency

  3. Continuous room-temperature operation of GaAs-Al/sub x/Ga1/sub -//sub x/As double-heterostructure lasers prepared by molecular-beam epitaxy

    International Nuclear Information System (INIS)

    Cho, A.Y.; Dixon, R.W.; Casey, H.C. Jr.; Hartman, R.L.

    1976-01-01

    The continuous (cw) operation at temperatures as high as 100 0 C of stripe-geometry GaAs-Al/sub x/Ga/sub 1-x/As double-heterostructure lasers fabricated by molecular-beam epitaxial (MBE) techniques has been achieved. Improved MBE laser performance was the result of the extensive efforts to eliminate hydrocarbon and water vapor from the growth apparatus. For 12-μm-wide stripe-geometry lasers with 380-μm-long cavities, the cw threshold currents varied between 163 and 297 mA at room temperature

  4. Laser-excited photoluminescence of three-layer GaAs double-heterostructure laser material

    International Nuclear Information System (INIS)

    Nash, F.R.; Dixon, R.W.; Barnes, P.A.; Schumaker, N.E.

    1975-01-01

    The successful fabrication of high-quality DH GaAs lasers from a simplified three-layer structure is reported. A major asset of this structure is the transparency of its final layer to recombination radiation occurring in the active layer, thus permitting the use of nondestructive photoluminescent techniques for material evaluation prior to device fabrication. In the course of photoluminescence investigations on this material the additional important observation has been made that indirect excitation (in which photocarriers are generated in the top ternary layer) has significant advantages over direct excitation (in which photocarriers are generated directly in the active layer). These include (i) the direct measurement of Al concentrations in both upper layers, (ii) the measurements of the minority-carrier diffusion length in the upper layer, (iii) an easily obtained indication of taper in the thickness of the upper layer, and (iv) surprisingly effective excitation of the active layer. By combining direct and indirect excitation it is shown that a clearer understanding of the location and detrimental influences of defects in the GaAs laser structure may be obtained. For example, the width of the region of reduced luminescence associated with many defects is found to be very excitation dependent and is confirmed to arise fr []m reduced active region luminescence. The photoluminescent excitation techniques described should be useful in the study of other heterostructure devices and material systems

  5. 58 Etude du champ lointain de la double hétérostructure laser ...

    African Journals Online (AJOL)

    AKA BOKO

    lointain. Abstract. Study of the far field of the double heterostructure laser. GaInAsSb/GaAlAsSb ... the establishment the conditions for a better coupling of the DH laser with the optical fibres. ..... [4] - H. K. CHOI, G. W. TURNER and S. J. EGLASH, IEEE photonics Technology Letters, Vol. 6 ( 1994) 7. [5] - H. K. CHOI, and S. J. ...

  6. Enhanced photocatalytic efficiency in zirconia buffered n-NiO/p-NiO single crystalline heterostructures by nanosecond laser treatment

    Energy Technology Data Exchange (ETDEWEB)

    Molaei, R.; Bayati, M. R.; Alipour, H. M.; Nori, S.; Narayan, J. [Department of Materials Science and Engineering, NC State University, EB-1, Raleigh, North Carolina 27695-7907 (United States)

    2013-06-21

    We report the formation of NiO based single crystalline p-n junctions with enhanced photocatalytic activity induced by pulsed laser irradiation. The NiO epilayers were grown on Si(001) substrates buffered with cubic yttria-stabilized zirconia (c-YSZ) by using pulsed laser deposition. The NiO/c-YSZ/Si heterostructures were subsequently laser treated by 5 pulses of KrF excimer laser (pulse duration = 25 Multiplication-Sign 10{sup -9} s) at lower energies. Microstructural studies, conducted by X-ray diffraction ({theta}-2{theta} and {phi} techniques) and high resolution transmission electron microscope, showed a cube-on-cube epitaxial relationship at the c-YSZ/Si interface; the epitaxial relationship across the NiO/c-YSZ interface was established as NiO<111 > Double-Vertical-Line Double-Vertical-Line c-YSZ<001> and in-plane NiO<110> Double-Vertical-Line Double-Vertical-Line c-YSZ<100>. Electron microscopy studies showed that the interface between the laser annealed and the pristine region as well as the NiO/c-YSZ interface was atomically sharp and crystallographically continuous. The formation of point defects, namely oxygen vacancies and NiO, due to the coupling of the laser photons with the NiO epilayers was confirmed by XPS. The p-type electrical characteristics of the pristine NiO epilayers turned to an n-type behavior and the electrical conductivity was increased by one order of magnitude after laser treatment. Photocatalytic activity of the pristine (p-NiO/c-YSZ/Si) and the laser-annealed (n-NiO/p-NiO/c-YSZ/Si) heterostructures were assessed by measuring the decomposition rate of 4-chlorophenol under UV light. The photocatalytic reaction rate constants were determined to be 0.0059 and 0.0092 min{sup -1} for the as-deposited and the laser-treated samples, respectively. The enhanced photocatalytic efficiency was attributed to the suppressed charge carrier recombination in the NiO based p-n junctions and higher electrical conductivity. Besides, the oxygen vacancies

  7. Studies on the InAlN/InGaN/InAlN/InGaN double channel heterostructures with low sheet resistance

    Science.gov (United States)

    Zhang, Yachao; Wang, Zhizhe; Xu, Shengrui; Chen, Dazheng; Bao, Weimin; Zhang, Jinfeng; Zhang, Jincheng; Hao, Yue

    2017-11-01

    High quality InAlN/InGaN/InAlN/InGaN double channel heterostructures were proposed and grown by metal organic chemical vapor deposition. Benefiting from the adoption of the pulsed growth method and Two-Step AlN interlayer, the material quality and interface characteristics of the double channel heterostructures are satisfactory. The results of the temperature-dependent Hall effect measurement indicated that the transport properties of the double channel heterostructures were superior to those of the traditional single channel heterostructures in the whole test temperature range. Meanwhile, the sheet resistance of the double channel heterostructures reached 218.5 Ω/□ at 300 K, which is the record of InGaN-based heterostructures. The good transport properties of the InGaN double channel heterostructures are beneficial to improve the performance of the microwave power devices based on nitride semiconductors.

  8. Resonant Tunneling in Photonic Double Quantum Well Heterostructures

    Directory of Open Access Journals (Sweden)

    Cox Joel

    2010-01-01

    Full Text Available Abstract Here, we study the resonant photonic states of photonic double quantum well (PDQW heterostructures composed of two different photonic crystals. The heterostructure is denoted as B/A/B/A/B, where photonic crystals A and B act as photonic wells and barriers, respectively. The resulting band structure causes photons to become confined within the wells, where they occupy discrete quantized states. We have obtained an expression for the transmission coefficient of the PDQW heterostructure using the transfer matrix method and have found that resonant states exist within the photonic wells. These resonant states occur in split pairs, due to a coupling between degenerate states shared by each of the photonic wells. It is observed that when the resonance energy lies at a bound photonic state and the two photonic quantum wells are far away from each other, resonant states appear in the transmission spectrum of the PDQW as single peaks. However, when the wells are brought closer together, coupling between bound photonic states causes an energy-splitting effect, and the transmitted states each have two peaks. Essentially, this means that the system can be switched between single and double transparent states. We have also observed that the total number of resonant states can be controlled by varying the width of the photonic wells, and the quality factor of transmitted peaks can be drastically improved by increasing the thickness of the outer photonic barriers. It is anticipated that the resonant states described here can be used to develop new types of photonic-switching devices, optical filters, and other optoelectronic devices.

  9. Fabrication of a terahertz quantum-cascade laser with a double metal waveguide based on multilayer GaAs/AlGaAs heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Khabibullin, R. A., E-mail: khabibullin@isvch.ru; Shchavruk, N. V.; Pavlov, A. Yu.; Ponomarev, D. S.; Tomosh, K. N.; Galiev, R. R.; Maltsev, P. P. [Russian Academy of Sciences, Institute of Ultrahigh Frequency Semiconductor Electronics (Russian Federation); Zhukov, A. E.; Cirlin, G. E.; Zubov, F. I.; Alferov, Zh. I. [Russian Academy of Sciences, Saint Petersburg Academic University—Nanotechnology Research and Education Center (Russian Federation)

    2016-10-15

    The Postgrowth processing of GaAs/AlGaAs multilayer heterostructures for terahertz quantumcascade lasers (QCLs) are studied. This procedure includes the thermocompression bonding of In–Au multilayer heterostructures with a doped n{sup +}-GaAs substrate, mechanical grinding, and selective wet etching of the substrate, and dry etching of QCL ridge mesastripes through a Ti/Au metallization mask 50 and 100 μm wide. Reactive-ion-etching modes with an inductively coupled plasma source in a BCl{sub 3}/Ar gas mixture are selected to obtain vertical walls of the QCL ridge mesastripes with minimum Ti/Au mask sputtering.

  10. PbSnTe injection lasers

    International Nuclear Information System (INIS)

    Oron, M.

    1982-03-01

    Carrier confined homostructure PbSnTe lasers were developed and investigated. In this laser structure good electrical and optical confinement can be achieved by a suitable carrier concentration profile. The advantage of these lasers over PbSnTe heterostructure lasers is the perfect lattice matching between the various layers of the structure. The desired carrier concentration profile was achieved by the growth of several epitaxial layers by the LPE method on a suitable substrate. The performance of these lasers was compared with that of previous homostructure and double heterostructure lasers. (H.K.)

  11. Laser generation in opal-like single-crystal and heterostructure photonic crystals

    Science.gov (United States)

    Kuchyanov, A. S.; Plekhanov, A. I.

    2016-11-01

    This study describes the laser generation of a 6Zh rhodamine in artificial opals representing single-crystal and heterostructure films. The spectral and angular properties of emission and the threshold characteristics of generation are investigated. In the case where the 6Zh rhodamine was in a bulk opal, the so-called random laser generation was observed. In contrast to this, the laser generation caused by a distributed feedback inside the structure of the photonic bandgap was observed in photonic-crystal opal films.

  12. A Ge/Si heterostructure nanowire-based double quantum dot with integrated charge sensor

    DEFF Research Database (Denmark)

    Hu, Yongjie; Churchill, Hugh; Reilly, David

    2007-01-01

    Coupled electron spins in semiconductor double quantum dots hold promise as the basis for solid-state qubits. To date, most experiments have used III-V materials, in which coherence is limited by hyperfine interactions. Ge/Si heterostructure nanowires seem ideally suited to overcome this limitati...

  13. Fabrication and experimental demonstration of photonic crystal laser with buried heterostructure

    DEFF Research Database (Denmark)

    Sakanas, Aurimas; Yu, Yi; Semenova, Elizaveta

    2017-01-01

    of separating active light amplification regions from passive regions for light propagation without induced absorption losses and surface recombination. The main focus of this work is the fabrication and experimental demonstration of a buried heterostructure (BH) photonic crystal laser bonded to a silicon wafer...

  14. Use of the AlGaAs native oxide in AlGaAs-GaAs quantum well heterostructure laser devices

    International Nuclear Information System (INIS)

    Ries, M.J.; Chen, E.I.; Holonyak, Chen N. Jr.

    1995-01-01

    At atmospheric conditions high Al Composition Al x Ga 1-x As (x ≥0.7) in Al x Ga 1-x As-GaAs heterostructures is subject to failure via hydrolyzation. In contrast, open-quotes wetclose quotes oxidation at higher temperatures (≥400 degrees C) produces stable AlGaAs native oxides that prove to be useful in quantum well heterostructure devices. The open-quotes wetclose quotes oxidation process results in the conversion of high Al composition heterostructure material into a stable low refractive index, current-blocking native oxide, which can be used to define cavities and current paths. The oxidation can be used to passivate exposed Al-bearing surfaces. Its selective, anisotropic nature is also useful for the fabrication of both planar and non-planar devices, including buried-oxide heterostructures. The III-V native oxide has been used in the fabrication of single-stripe and stripe array lasers, ring lasers, coupled-cavity lasers, buried-oxide verticle cavity lasers, deep-oxide waveguides, deep-oxide lasers, and high reliability LED's. Also, the native oxide of A1As has been demonstrated in field effect transistor operation. The use of the III-V native oxide in various device applications is described

  15. Sub-monolayer Deposited InGaAs/GaAs Quantum Dot Heterostructures and Lasers

    DEFF Research Database (Denmark)

    Xu, Zhangcheng

    2004-01-01

    deposition, the deposition of a short-period InAs/GaAs superlattice on GaAs (100) surface with an InAs effective thickness of less than 1 monolayer (ML), results in the formatioin of nanometer scale (In,Ga)As QDs of a non-SK class.In this thesis, the SML InGaAs/GaAs QDs are formed by 10 cycles of alternate......The fabrication, characterization and exploitation of self-assembled quantum dot (QD) heterostructures have attracted much attention not only in basic research, but also by the promising device applications such as QD lasers. The Stranski-Krastanow (SK) growth and the submonolayer (SML) deposition...... deposition of 0.5 ML InAs and 2.5 MLGaAs. The growth, structure, and optical properties of SML InGaAs/GaAs QD heterostructures are investigated in detail. SML InGaAs/GaAs QD lasers lasing even at room temperature have been successfully realized. The gain properties of SML InGaAs QD lasers are studied...

  16. Carrier quenching in InGaP/GaAs double heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Wells, Nathan P., E-mail: nathan.p.wells@aero.org; Driskell, Travis U.; Hudson, Andrew I.; LaLumondiere, Stephen D.; Lotshaw, William T. [The Aerospace Corporation, Physical Sciences Laboratories, P.O. Box 92957, Los Angeles, California 90009 (United States); Forbes, David V.; Hubbard, Seth M. [NanoPower Research Labs, Rochester Institute of Technology, 156 Lomb Memorial Dr., Rochester, New York 14623 (United States)

    2015-08-14

    Photoluminescence measurements on a series of GaAs double heterostructures demonstrate a rapid quenching of carriers in the GaAs layer at irradiance levels below 0.1 W/cm{sup 2} in samples with a GaAs-on-InGaP interface. These results indicate the existence of non-radiative defect centers at or near the GaAs-on-InGaP interface, consistent with previous reports showing the intermixing of In and P when free As impinges on the InGaP surface during growth. At low irradiance, these defect centers can lead to sub-ns carrier lifetimes. The defect centers involved in the rapid carrier quenching can be saturated at higher irradiance levels and allow carrier lifetimes to reach hundreds of nanoseconds. To our knowledge, this is the first report of a nearly three orders of magnitude decrease in carrier lifetime at low irradiance in a simple double heterostructure. Carrier quenching occurs at irradiance levels near the integrated Air Mass Zero (AM0) and Air Mass 1.5 (AM1.5) solar irradiance. Additionally, a lower energy photoluminescence band is observed both at room and cryogenic temperatures. The temperature and time dependence of the lower energy luminescence is consistent with the presence of an unintentional InGaAs or InGaAsP quantum well that forms due to compositional mixing at the GaAs-on-InGaP interface. Our results are of general interest to the photovoltaic community as InGaP is commonly used as a window layer in GaAs based solar cells.

  17. Constructing oxide interfaces and heterostructures by atomic layer-by-layer laser molecular beam epitaxy

    OpenAIRE

    Lei, Qingyu; Golalikhani, Maryam; Davidson, Bruce A.; Liu, Guozhen; Schlom, D. G.; Qiao, Qiao; Zhu, Yimei; Chandrasena, Ravini U.; Yang, Weibing; Gray, Alexander X.; Arenholz, Elke; Farrar, Andrew K.; Tenne, Dmitri A.; Hu, Minhui; Guo, Jiandong

    2016-01-01

    Advancements in nanoscale engineering of oxide interfaces and heterostructures have led to discoveries of emergent phenomena and new artificial materials. Combining the strengths of reactive molecular-beam epitaxy and pulsed-laser deposition, we show here, with examples of Sr1+xTi1-xO3+delta, Ruddlesden-Popper phase Lan+1NinO3n+1 (n = 4), and LaAl1+yO3(1+0.5y)/SrTiO3 interfaces, that atomic layer-by-layer laser molecular-beam epitaxy (ALL-Laser MBE) significantly advances the state of the art...

  18. Molecular beam epitaxy of alternating-strain ZnSe-based multilayer heterostructures for blue-green lasers

    International Nuclear Information System (INIS)

    Ivanov, S.V.; Toropov, A.A.; Sorokin, S.V.; Shubina, T.V.; Il'inskaya, N.D.; Lebedev, A.V.; Sedova, I.V.; Kop'ev, P.S.; Alferov, Zh.I.; Lugauer, H.-J.; Reuscher, G.; Keim, M.; Fischer, F.; Waag, A.; Landwehr, G.

    1998-01-01

    High-quality ZnSe-based heterostructures are grown by uninterrupted molecular beam epitaxy using the concept of strain compensation and alternating-strain multilayers. To verify the advantages of this technique, optically pumped ZnSSe/ZnCdSe laser structures containing short-period superlattices or multiple quantum wells have been grown and studied. A room-temperature injection laser diode with a BeZnSe/ZnSe superlattice waveguide is described

  19. Persistent photoeffects in p-i-n GaAs/AlGaAs heterostructures with double quantum wells

    DEFF Research Database (Denmark)

    Dorozhkin, S.I.; Timofeev, V.B.; Hvam, Jørn Märcher

    2001-01-01

    Abrupt changes in the capacitance between the p and n regions were observed in a planar p-i-n GaAs/AlGaAs heterostructure with two tunneling-coupled quantum wells exposed to laser irradiation (lambda = 633 nm). These changes can be caused by variations in both temperature (in the vicinity of T...

  20. Organic heterostructures deposited by MAPLE on AZO substrate

    Science.gov (United States)

    Socol, M.; Preda, N.; Stanculescu, A.; Breazu, C.; Florica, C.; Stanculescu, F.; Iftimie, S.; Girtan, M.; Popescu-Pelin, G.; Socol, G.

    2017-09-01

    Organic heterostructures based on poly(3-hexylthiophene) (P3HT) and fullerene (C60) as blends or multilayer were deposited on Al:ZnO (AZO) by Matrix-Assisted Pulsed Laser Evaporation (MAPLE) technique. The AZO layers were obtained by Pulsed Laser Deposition (PLD) on glass substrate, the high quality of the films being reflected by the calculated figure of merit. The organic heterostructures were investigated from morphological, optical and electrical point of view by atomic force microscopy (AFM), UV-vis spectroscopy, photoluminescence (PL) and current-voltage (I-V) measurements, respectively. The increase of the C60 content in the blend heterostructure has as result a high roughness. Compared with the multilayer heterostructure, those based on blends present an improvement in the electrical properties. Under illumination, the highest current value was recorded for the heterostructure based on the blend with the higher C60 amount. The obtained results showed that MAPLE is a useful technique for the deposition of the organic heterostructures on AZO as transparent conductor electrode.

  1. Double pulse doped InGaAs/AlGaAs/GaAs pseudomorphic high-electron-mobility transistor heterostructures

    International Nuclear Information System (INIS)

    Egorov, A. Yu.; Gladyshev, A. G.; Nikitina, E. V.; Denisov, D. V.; Polyakov, N. K.; Pirogov, E. V.; Gorbazevich, A. A.

    2010-01-01

    Double pulse doped (δ-doped) InGaAs/AlGaAs/GaAs pseudomorphic high-electron-mobility transistor (HEMT) heterostructures were grown by molecular-beam epitaxy using a multiwafer technological system. The room-temperature electron mobility was determined by the Hall method as 6550 and 6000 cm 2 /(V s) at sheet electron densities of 3.00 x 10 12 and 3.36 x 10 12 cm -2 , respectively. HEMT heterostructures fabricated in a single process feature high uniformity of structural and electrical characteristics over the entire area of wafers 76.2 mm in diameter and high reproducibility of characteristics from process to process.

  2. Double nanosecond pulses generation in ytterbium fiber laser

    Energy Technology Data Exchange (ETDEWEB)

    Veiko, V. P.; Samokhvalov, A. A., E-mail: samokhvalov.itmo@gmail.com; Yakovlev, E. B.; Zhitenev, I. Yu.; Kliushin, A. N. [Saint-Petersburg State University of Information Technologies, Mechanics and Optics, Kronverksky Pr. 49, Saint Petersburg (Russian Federation); Lednev, V. N. [Prokhorov General Physics Institute of the Russian Academy of Sciences, Vavilov Str., 38, Moscow (Russian Federation); National University of Science and Technology MISiS, Leninskyave., 4, Moscow (Russian Federation); Pershin, S. M. [Prokhorov General Physics Institute of the Russian Academy of Sciences, Vavilov Str., 38, Moscow (Russian Federation)

    2016-06-15

    Double pulse generation mode for nanosecond ytterbium fiber laser was developed. Two sequential 60-200 ns laser pulses with variable delay between them were generated by acousto-optic modulator opening with continuous diode pumping. A custom radio frequency generator was developed to produce two sequential “opening” radio pulses with a delay of 0.2–1 μs. It was demonstrated that double pulse generation did not decrease the average laser power while providing the control over the laser pulse power profile. Surprisingly, a greater peak power in the double pulse mode was observed for the second laser pulse. Laser crater studies and plasma emission measurements revealed an improved efficiency of laser ablation in the double pulse mode.

  3. Microscopic investigation of InGaN/GaN heterostructure laser diode degradation using Kelvin probe force microscopy

    International Nuclear Information System (INIS)

    Lochthofen, A; Mertin, W; Bacher, G; Furitsch, M; Bruederl, G; Strauss, U; Haerle, V

    2008-01-01

    We report on Kelvin probe force microscopy (KPFM) measurements on fresh and artificially aged InGaN/GaN laser test structures. In the case of an unbiased laser diode, a comparison of the surface potential between a fresh and a stressed laser diode shows a pronounced modification of the laser facet due to the aging process. Performing KPFM measurements under forward bias, a correlation between the macroscopic I-V characteristics and the microscopic voltage drop across the heterostructure layer sequence is found. This clearly demonstrates the potential of KPFM for investigating InGaN/GaN laser diode degradation

  4. Development of CdTe/Cd1-xMgxTe double barrier, single quantum well heterostructure for resonant tunneling

    International Nuclear Information System (INIS)

    Reuscher, G.; Keim, M.; Fischer, F.; Waag, A.; Landwehr, G.

    1995-01-01

    We report the first observation of resonant tunneling through a CdTe/Cd 1-x Mg x Te double barrier, single quantum well heterostructure. Negative differential resistance is observable at temperatures below 230 K, exhibiting a peak to valley ratio of 3:1 at 4.2 K. (author)

  5. Nonradiative lifetime extraction using power-dependent relative photoluminescence of III-V semiconductor double-heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Walker, A. W., E-mail: alexandre.walker@ise.fraunhofer.de; Heckelmann, S.; Karcher, C.; Höhn, O.; Went, C.; Niemeyer, M.; Bett, A. W.; Lackner, D. [Fraunhofer Institute for Solar Energy Systems ISE, Heidenhofstraße 2, 79110 Freiburg (Germany)

    2016-04-21

    A power-dependent relative photoluminescence measurement method is developed for double-heterostructures composed of III-V semiconductors. Analyzing the data yields insight into the radiative efficiency of the absorbing layer as a function of laser intensity. Four GaAs samples of different thicknesses are characterized, and the measured data are corrected for dependencies of carrier concentration and photon recycling. This correction procedure is described and discussed in detail in order to determine the material's Shockley-Read-Hall lifetime as a function of excitation intensity. The procedure assumes 100% internal radiative efficiency under the highest injection conditions, and we show this leads to less than 0.5% uncertainty. The resulting GaAs material demonstrates a 5.7 ± 0.5 ns nonradiative lifetime across all samples of similar doping (2–3 × 10{sup 17 }cm{sup −3}) for an injected excess carrier concentration below 4 × 10{sup 12 }cm{sup −3}. This increases considerably up to longer than 1 μs under high injection levels due to a trap saturation effect. The method is also shown to give insight into bulk and interface recombination.

  6. Laser molecular beam epitaxy of ZnO thin films and heterostructures

    International Nuclear Information System (INIS)

    Opel, Matthias; Geprägs, Stephan; Althammer, Matthias; Brenninger, Thomas; Gross, Rudolf

    2014-01-01

    We report on the growth of epitaxial ZnO thin films and ZnO-based heterostructures on sapphire substrates by laser molecular beam epitaxy (MBE). We first discuss some recent developments in laser-MBE such as flexible ultraviolet laser beam optics, infrared laser heating systems or the use of atomic oxygen and nitrogen sources, and describe the technical realization of our advanced laser-MBE system. Then we describe the optimization of the deposition parameters for ZnO films such as laser fluence and substrate temperature and the use of buffer layers. The detailed structural characterization by x-ray analysis and transmission electron microscopy shows that epitaxial ZnO thin films with high structural quality can be achieved, as demonstrated by a small out-of-plane and in-plane mosaic spread as well as the absence of rotational domains. We also demonstrate the heteroepitaxial growth of ZnO-based multilayers as a prerequisite for spin transport experiments and the realization of spintronic devices. As an example, we show that TiN/Co/ZnO/Ni/Au multilayer stacks can be grown on (0 0 0 1)-oriented sapphire with good structural quality of all layers and well defined in-plane epitaxial relations. (paper)

  7. Novel engineered compound semiconductor heterostructures for advanced electronics applications

    Science.gov (United States)

    Stillman, Gregory E.; Holonyak, Nick, Jr.; Coleman, James J.

    1992-06-01

    To provide the technology base that will enable SDIO capitalization on the performance advantages offered through novel engineered multiple-lavered compound semiconductor structures, this project has focussed on three specific areas: (1) carbon doping of AlGaAs/GaAs and InP/InGaAs materials for reliable high frequency heterojunction bipolar transistors; (2) impurity induced layer disordering and the environmental degradation of AlxGal-xAs-GaAs quantum-well heterostructures and the native oxide stabilization of AlxGal-xAs-GaAs quantum well heterostructure lasers; and (3) non-planar and strained-layer quantum well heterostructure lasers and laser arrays. The accomplishments in this three year research are reported in fifty-six publications and the abstracts included in this report.

  8. Double pulse laser ablation and plasma: Laser induced breakdown spectroscopy signal enhancement

    International Nuclear Information System (INIS)

    Babushok, V.I.; DeLucia, F.C.; Gottfried, J.L.; Munson, C.A.; Miziolek, A.W.

    2006-01-01

    A review of recent results of the studies of double laser pulse plasma and ablation for laser induced breakdown spectroscopy applications is presented. The double pulse laser induced breakdown spectroscopy configuration was suggested with the aim of overcoming the sensitivity shortcomings of the conventional single pulse laser induced breakdown spectroscopy technique. Several configurations have been suggested for the realization of the double pulse laser induced breakdown spectroscopy technique: collinear, orthogonal pre-spark, orthogonal pre-heating and dual pulse crossed beam modes. In addition, combinations of laser pulses with different wavelengths, different energies and durations were studied, thus providing flexibility in the choice of wavelength, pulse width, energy and pulse sequence. The double pulse laser induced breakdown spectroscopy approach provides a significant enhancement in the intensity of laser induced breakdown spectroscopy emission lines up to two orders of magnitude greater than a conventional single pulse laser induced breakdown spectroscopy. The double pulse technique leads to a better coupling of the laser beam with the plasma plume and target material, thus providing a more temporally effective energy delivery to the plasma and target. The experimental results demonstrate that the maximum effect is obtained at some optimum separation delay time between pulses. The optimum value of the interpulse delay depends on several factors, such as the target material, the energy level of excited states responsible for the emission, and the type of enhancement process considered. Depending on the specified parameter, the enhancement effects were observed on different time scales ranging from the picosecond time level (e.g., ion yield, ablation mass) up to the hundred microsecond level (e.g., increased emission intensity for laser induced breakdown spectroscopy of submerged metal target in water). Several suggestions have been proposed to explain

  9. Design and realization of one-dimensional double hetero-structure photonic crystals for infrared-radar stealth-compatible materials applications

    International Nuclear Information System (INIS)

    Wang, Zhixun; Cheng, Yongzhi; Nie, Yan; Wang, Xian; Gong, Rongzhou

    2014-01-01

    In this paper, a new type one-dimensional (1D) double hetero-structure composite photonic crystal (CPC) for infrared-radar stealth-compatible materials applications was proposed and studied numerically and experimentally. First, based on transfer matrix method of thin-film optical theory, the propagation characteristics of the proposed structure comprising a stack of different alternating micrometer-thick layers of germanium and zinc sulfide were investigated numerically. Calculation results exhibit that this 1D single hetero-structure PC could achieve a flat high reflectivity gradually with increasing the number of the alternating media layers in a single broadband range. Then, based on principles of distributed Bragg reflector micro-cavity, a 1D double hetero-structure CPC comprising four PCs with thickness of 0.797 μm, 0.592 μm, 1.480 μm, and 2.114 μm, respectively, was proposed. Calculation results exhibit that this CPC could achieve a high reflectance of greater than 0.99 in the wavelength ranges of 3–5 μm and 8–14 μm and agreed well with experiment. Further experiments exhibit that the infrared emissivity of the proposed CPC is as low as 0.073 and 0.042 in the wavelength ranges of 3–5 μm and 8–12 μm, respectively. In addition, the proposed CPC can be used to construct infrared-radar stealth-compatible materials due to its high transmittance in radar wave band

  10. Design and realization of one-dimensional double hetero-structure photonic crystals for infrared-radar stealth-compatible materials applications

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Zhixun; Cheng, Yongzhi, E-mail: cyz0715@126.com; Nie, Yan; Wang, Xian; Gong, Rongzhou, E-mail: rzhgong@mail.hust.edu.cn [School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074 (China)

    2014-08-07

    In this paper, a new type one-dimensional (1D) double hetero-structure composite photonic crystal (CPC) for infrared-radar stealth-compatible materials applications was proposed and studied numerically and experimentally. First, based on transfer matrix method of thin-film optical theory, the propagation characteristics of the proposed structure comprising a stack of different alternating micrometer-thick layers of germanium and zinc sulfide were investigated numerically. Calculation results exhibit that this 1D single hetero-structure PC could achieve a flat high reflectivity gradually with increasing the number of the alternating media layers in a single broadband range. Then, based on principles of distributed Bragg reflector micro-cavity, a 1D double hetero-structure CPC comprising four PCs with thickness of 0.797 μm, 0.592 μm, 1.480 μm, and 2.114 μm, respectively, was proposed. Calculation results exhibit that this CPC could achieve a high reflectance of greater than 0.99 in the wavelength ranges of 3–5 μm and 8–14 μm and agreed well with experiment. Further experiments exhibit that the infrared emissivity of the proposed CPC is as low as 0.073 and 0.042 in the wavelength ranges of 3–5 μm and 8–12 μm, respectively. In addition, the proposed CPC can be used to construct infrared-radar stealth-compatible materials due to its high transmittance in radar wave band.

  11. Laser alignment measurement model with double beam

    Science.gov (United States)

    Mo, Changtao; Zhang, Lili; Hou, Xianglin; Wang, Ming; Lv, Jia; Du, Xin; He, Ping

    2012-10-01

    Double LD-Double PSD schedule.employ a symmetric structure and there are a laser and a PSD receiver on each axis. The Double LD-Double PSD is used, and the rectangular coordinate system is set up by use of the relationship of arbitrary two points coordinates, and then the parameter formula is deduced by the knowledge of solid geometry. Using the data acquisition system and the data processing model of laser alignment meter with double laser beam and two detector , basing on the installation parameter of the computer, we can have the state parameter between the two shafts by more complicated calculation and correction. The correcting data of the four under chassis of the adjusted apparatus moving on the level and the vertical plane can be calculated using the computer. This will instruct us to move the apparatus to align the shafts.

  12. Realization of double-pulse laser irradiating scheme for laser ion sources

    International Nuclear Information System (INIS)

    Li Zhangmin; Jin Qianyu; Liu Wei; Zhang Junjie; Sha Shan; Zhao Huanyu; Sun Liangting; Zhang Xuezhen; Zhao Hongwei

    2015-01-01

    A double-pulse laser irradiating scheme has been designed and established for the production of highly charged ion beams at Institute of Modern Physics (IMP), Chinese Academy of Sciences. The laser beam output by a Nd : YAG laser is split and combined by a double of beam splitters, between which the split laser beams are transmitted along different optical paths to get certain time delay between each other. With the help of a quarter-wave plate before the first splitter, the energy ratio between the two laser pulses can be adjusted between 3 : 8 to 8 : 3. To testify its feasibility, a preliminary experiment was carried out with the new-developed double-pulse irradiating scheme to produce highly charged carbon ions. Comparing the results with those got from the previous single-pulse irradiating scheme, the differences in the time structure and Charge State Distribution (CSD) of the ion pulse were observed, but its mechanisms and optimization require further studies. (authors)

  13. Analysis of current instabilities of thin AlN/GaN/AlN double heterostructure high electron mobility transistors

    International Nuclear Information System (INIS)

    Zervos, Ch; Adikimenakis, A; Bairamis, A; Kostopoulos, A; Kayambaki, M; Tsagaraki, K; Konstantinidis, G; Georgakilas, A

    2016-01-01

    The current instabilities of high electron mobility transistors (HEMTs), based on thin double AlN/GaN/AlN heterostructures (∼0.5 μm total thickness), directly grown on sapphire substrates, have been analyzed and compared for different AlN top barrier thicknesses. The structures were capped by 1 nm GaN and non-passivated 1 μm gate-length devices were processed. Pulsed I–V measurements resulted in a maximum cold pulsed saturation current of 1.4 A mm −1 at a gate-source voltage of +3 V for 3.7 nm AlN thickness. The measured gate and drain lag for 500 ns pulse-width varied between 6%–12% and 10%–18%, respectively. Furthermore, a small increase in the threshold voltage was observed for all the devices, possibly due to the trapping of electrons under the gate contact. The off-state breakdown voltage of V br  = 70 V, for gate-drain spacing of 2 μm, was approximately double the value measured for a single AlN/GaN HEMT structure grown on a thick GaN buffer layer. The results suggest that the double AlN/GaN/AlN heterostructures may offer intrinsic advantages for the breakdown and current stability characteristics of high current HEMTs. (paper)

  14. Role of the electron blocking layer in the graded-index separate confinement heterostructure nitride laser diodes

    Science.gov (United States)

    Bojarska, Agata; Goss, Jakub; Stanczyk, Szymon; Makarowa, Irina; Schiavon, Dario; Czernecki, Robert; Suski, Tadeusz; Perlin, Piotr

    2018-04-01

    In this work, we investigate the role of the electron blocking layer (EBL) in laser diodes based on a graded index separate confinement heterostructure. We compare two sets of devices with very different EBL aluminum composition (3% and 12%) and design (graded and superlattice). The results of electro-optical characterization of these laser diodes reveal surprisingly modest role of electron blocking layer composition in determination of the threshold current and the differential efficiency values. However, EBL structure influences the operating voltage, which is decreased for devices with lower EBL and superlattice EBL. We observe also the differences in the thermal stability of devices - characteristic temperature is lower for lasers with 3% Al in EBL.

  15. Enhanced direct-gap light emission from Si-capped n+-Ge epitaxial layers on Si after post-growth rapid cyclic annealing: impact of non-radiative interface recombination toward Ge/Si double heterostructure lasers.

    Science.gov (United States)

    Higashitarumizu, Naoki; Ishikawa, Yasuhiko

    2017-09-04

    Enhanced direct-gap light emission is reported for Si-capped n + -Ge layers on Si after post-growth rapid cyclic annealing (RCA), and impact of non-radiative recombination (NRR) at the Ge/Si interface is discussed toward Ge/Si double heterostructure (DH) lasers. P-doped n + -Ge layer (1 × 10 19 cm -3 , 400 nm) is grown on Si by ultra-high vacuum chemical vapor deposition, followed by a growth of Si capping layer (5 nm) to form a Si/Ge/Si DH structure. Post-growth RCA to eliminate defects in Ge is performed in N 2 at temperatures between 900°C and 780°C, where the annealing time is minimized to be 5 s in each RCA cycle to prevent an out-diffusion of P dopants from the Ge surface. Direct-gap photoluminescence (PL) intensity at 1.6 µm increases with the RCA cycles up to 40, although the threading dislocation density in Ge is not reduced after 3 cycles in the present condition. The PL enhancement is ascribed to the suppression of NRR at the Ge/Si interface, where an intermixed SiGe alloy is formed. For Ge/Si DH lasers, NRR at the Ge/Si interface is found to have a significant impact on the threshold current density Jth. In order to achieve Jth on the order of 1 kA/cm 2 , similar to III-V lasers, the interface recombination velocity S is required below 10 3 cm/s in spite of S as large as 10 5 cm/s at the ordinary defect-rich Ge/Si interface.

  16. Laser diode bars based on AlGaAs/GaAs quantum-well heterostructures with an efficiency up to 70%

    Science.gov (United States)

    Ladugin, M. A.; Marmalyuk, A. A.; Padalitsa, A. A.; Bagaev, T. A.; Andreev, A. Yu.; Telegin, K. Yu.; Lobintsov, A. V.; Davydova, E. I.; Sapozhnikov, S. M.; Danilov, A. I.; Podkopaev, A. V.; Ivanova, E. B.; Simakov, V. A.

    2017-05-01

    The results of the development and fabrication of laser diode bars (λ = 800 - 810 nm) based on AlGaAs/GaAs quantum-well heterostructures with a high efficiency are presented. An increase in the internal quantum and external differential efficiencies together with a decrease in the working voltage and the series resistance allowed us to improve the output parameters of the semiconductor laser under quasi-cw pumping. The output power of the laser diode bars with a 5-mm transverse length reached 210 W, and the efficiency was ~70%.

  17. Long wave polar modes in semiconductor heterostructures

    CERN Document Server

    Trallero-Giner, C; García-Moliner, F; Garc A-Moliner, F; Perez-Alvarez, R; Garcia-Moliner, F

    1998-01-01

    Long Wave Polar Modes in Semiconductor Heterostructures is concerned with the study of polar optical modes in semiconductor heterostructures from a phenomenological approach and aims to simplify the model of lattice dynamics calculations. The book provides useful tools for performing calculations relevant to anyone who might be interested in practical applications. The main focus of Long Wave Polar Modes in Semiconductor Heterostructures is planar heterostructures (quantum wells or barriers, superlattices, double barrier structures etc) but there is also discussion on the growing field of quantum wires and dots. Also to allow anyone reading the book to apply the techniques discussed for planar heterostructures, the scope has been widened to include cylindrical and spherical geometries. The book is intended as an introductory text which guides the reader through basic questions and expands to cover state-of-the-art professional topics. The book is relevant to experimentalists wanting an instructive presentatio...

  18. Spatial redistribution of radiation in flip-chip photodiodes based on InAsSbP/InAs double heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Zakgeim, A. L. [Russian Academy of Sciences, Scientific and Technological Center for Microelectronics (Russian Federation); Il’inskaya, N. D.; Karandashev, S. A.; Lavrov, A. A., E-mail: ioffeled@mail.ru; Matveev, B. A.; Remennyy, M. A.; Stus’, N. M.; Usikova, A. A. [Russian Academy of Sciences, Ioffe Institute (Russian Federation); Cherniakov, A. E. [Russian Academy of Sciences, Scientific and Technological Center for Microelectronics (Russian Federation)

    2017-02-15

    The spatial distribution of equilibrium and nonequilibrium (including luminescent) IR (infrared) radiation in flip-chip photodiodes based on InAsSbP/InAs double heterostructures (λ{sub max} = 3.4 μm) is measured and analyzed; the structural features of the photodiodes, including the reflective properties of the ohmic contacts, are taken into account. Optical area enhancement due to multiple internal reflection in photodiodes with different geometric characteristics is estimated.

  19. Effect of the δ-potential on spin-dependent electron tunneling in double barrier semiconductor heterostructure

    Science.gov (United States)

    Chandrasekar, L. Bruno; Gnanasekar, K.; Karunakaran, M.

    2018-06-01

    The effect of δ-potential was studied in GaAs/Ga0.6Al0·4As double barrier heterostructure with Dresselhaus spin-orbit interaction. The role of barrier height and position of the δ- potential in the well region was analysed on spin-dependent electron tunneling using transfer matrix method. The spin-separation between spin-resonances on energy scale depends on both height and position of the δ- potential, whereas the tunneling life time of electrons highly influenced by the position of the δ- potential and not on the height. These results might be helpful for the fabrication of spin-filters.

  20. Development of CdTe/Cd{sub 1-x}Mg{sub x}Te double barrier, single quantum well heterostructure for resonant tunneling

    Energy Technology Data Exchange (ETDEWEB)

    Reuscher, G.; Keim, M.; Fischer, F.; Waag, A.; Landwehr, G. [Physikalishes Institut der Universitaet Wuerzburg am Hubland, Wuerzburg (Germany)

    1995-12-31

    We report the first observation of resonant tunneling through a CdTe/Cd{sub 1-x}Mg{sub x}Te double barrier, single quantum well heterostructure. Negative differential resistance is observable at temperatures below 230 K, exhibiting a peak to valley ratio of 3:1 at 4.2 K. (author). 16 refs, 2 figs.

  1. OH spectroscopy with frequency-doubled dye laser radiation

    Energy Technology Data Exchange (ETDEWEB)

    ter Meulen, J J

    1979-01-01

    Discusses the excitation of the OH radical by UV radiation for the determination of the hyperfine structure of the excited states. The 307 nm UV light is obtained by doubling the frequency (in double-refraction crystals) of a tunable dye laser. Details of the laser set-up are given. The method is suitable for application to other high-resolution molecular spectroscopy experiments in the area between 200 and 400 nm. Further extensions can be expected with ring compound dyes and external doubling of the frequency.

  2. Laser diode arrays based on AlGaAs/GaAs quantum-well heterostructures with an efficiency up to 62%

    Science.gov (United States)

    Ladugin, M. A.; Marmalyuk, A. A.; Padalitsa, A. A.; Telegin, K. Yu; Lobintsov, A. V.; Sapozhnikov, S. M.; Danilov, A. I.; Podkopaev, A. V.; Simakov, V. A.

    2017-08-01

    The results of development of quasi-cw laser diode arrays operating at a wavelength of 808 nm with a high efficiency are demonstrated. The laser diodes are based on semiconductor AlGaAs/GaAs quantum-well heterostructures grown by MOCVD. The measured spectral, spatial, electric and power characteristics are presented. The output optical power of the array with an emitting area of 5 × 10 mm is 2.7 kW at a pump current of 100 A, and the maximum efficiency reaches 62%.

  3. Study of compact X-ray laser pumped by pulse-train laser. Double-target experiment

    International Nuclear Information System (INIS)

    Yamaguchi, Naohiro; Fujikawa, Chiemi; Hara, Tamio

    2000-01-01

    We have been developing a tabletop x-ray laser based on the recombination plasma scheme. An advanced experiment has been started to improve x-ray laser output substantially. Two 11-mm-long laser produced plasmas were produced so that their axis aligned into a line, the double-target configuration. X-ray intensity of the 15.47 nm transition line of the Li-like Al ion has been enhanced in the double-target configuration. (author)

  4. ArF laser-based quantum well intermixing in InGaAs/InGaAsP heterostructures

    International Nuclear Information System (INIS)

    Genest, Jonathan; Beal, Romain; Aimez, Vincent; Dubowski, Jan J.

    2008-01-01

    Radiation from a 193 nm ArF laser was investigated to modify surface properties of InGaAs/InGaAsP quantum well (QW) heterostructures and introduce defects required to enhance intermixing during the annealing process. A top 200 nm thick sacrificial layer of InP served as a reservoir for laser generated defects. The irradiation with up to 90 pulses at 65-150 mJ/cm 2 allowed to generate an array of 1.2x1 mm 2 sites of QW intermixed material, with bandgap energy blueshifted up to 107 nm. We discuss the mechanism and advantages of this approach for postgrowth wafer level fabrication of multibandgap QW material

  5. Experimental-statistical model of liquid-phase epitaxy for InP/InGaAsP/InP heterostructures

    International Nuclear Information System (INIS)

    Vasil'ev, M.G.; Selin, A.A.; Shelyakin, A.A.

    1985-01-01

    A mathematic model of the process of liquid-phase epitaxy for double InP/InGaAsP/InP heterostructures is constructed using statistical methods of experiment planning. The analysis of the model shows that the degree of In-P system melt supercooling affects considerably the characteristics of double heterostructures

  6. Double-grating polychromator for laser-aided plasma diagnostics

    International Nuclear Information System (INIS)

    Mukhin, E.E.; Razdobarin, G.T.; Semenov, V.V.; Shilnikov, A.N.; Sukhanov, V.L.; Tolstjakov, S.Yu.; Kochergin, M.M.; Mihailovskij, Yu.K.; Bakh, L.I.

    2004-01-01

    A wide bandpass double-grating polychromator with high rejection and high transmission has been designed and manufactured for laser-aided plasma diagnostics. The special mount utilizes subtractive dispersion in the second stage of the double polychromator such that the larger dispersion of the second stage is reduced by that of the first stage. This affects the intensity of the stray light background at the laser wavelength. The background at the edge of the laser line was measured at 10 -5 of the light incident on the input slit. At the short end of the 200 nm bandpass, the stray light relative intensity approached 10 -7

  7. Selection of modes in transverse-mode waveguides for semiconductor lasers based on asymmetric heterostructures

    International Nuclear Information System (INIS)

    Slipchenko, S. O.; Bondarev, A. D.; Vinokurov, D. A.; Nikolaev, D. N.; Fetisova, N. V.; Sokolova, Z. N.; Pikhtin, N. A.; Tarasov, I. S.

    2009-01-01

    Asymmetric Al 0.3 Ga 0.7 As/GaAs/InGaAs heterostructures with a broadened waveguide produced by the method of MOCVD epitaxy are studied. It is established that the precision shift of the active region to one of the cladding layers ensures the generation of the chosen mode of high order in the transverse broadened waveguide. It is experimentally established that this shift brings about an increase in internal optical losses and a decrease in the internal quantum efficiency of stimulated emission. It is shown experimentally that the shift of the active region to the n-type cladding layer governs the sublinear form of the power-current characteristic for semiconductor lasers; in the case of a shift of the active region towards the p-type cladding layer, the laser diodes demonstrated a linear dependence of optical power on the pump current in the entire range of pump currents.

  8. Electron emission from a double-layer metal under femtosecond laser irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Li, Shuchang; Li, Suyu; Jiang, Yuanfei; Chen, Anmin, E-mail: amchen@jlu.edu.cn; Ding, Dajun; Jin, Mingxing, E-mail: mxjin@jlu.edu.cn

    2015-01-01

    In this paper we theoretically investigate electron emission during femtosecond laser ablation of single-layer metal (copper) and double-layer structures. The double-layer structure is composed of a surface layer (copper) and a substrate layer (gold or chromium). The calculated results indicate that the double-layer structure brings a change to the electron emission from the copper surface. Compared with the ablation of a single-layer, a double-layer structure may be helpful to decrease the relaxation time of the electron temperature, and optimize the electron emission by diminishing the tailing phenomenon under the same absorbed laser fluence. With the increase of the absorbed laser fluence, the effect of optimization becomes significant. This study provides a way to optimize the electron emission which can be beneficial to generate laser induced ultrafast electron pulse sources.

  9. Photoinduced effect on carrier transport properties in La0.7Sr0.3MnO3/Si heterostructure

    International Nuclear Information System (INIS)

    Jin, K X; Tan, X Y; Chen, C L; Zhao, S G

    2008-01-01

    The photoinduced effect on carrier transport properties has been investigated in the La 0.7 Sr 0.3 MnO 3 /Si heterostructure prepared by the pulsed laser deposition method. A giant photoinduced relative change in the resistance of about 6783% in the current-perpendicular-to-plane (CPP) geometry of the heterostructure has been observed when it is irradiated by a 532 nm laser at T = 270 K. The rising time of about 100 μs in the CPP geometry of the heterostructure under modulated laser irradiation of 200 μs duration seems to be independent of temperature. This provides an innovation for potential application in functional optical and electrical devices

  10. Effect of laser pulse energies in laser induced breakdown spectroscopy in double-pulse configuration

    International Nuclear Information System (INIS)

    Benedetti, P.A.; Cristoforetti, G.; Legnaioli, S.; Palleschi, V.; Pardini, L.; Salvetti, A.; Tognoni, E.

    2005-01-01

    In this paper, the effect of laser pulse energy on double-pulse laser induced breakdown spectroscopy signal is studied. In particular, the energy of the first pulse has been changed, while the second pulse energy is held fixed. A systematic study of the laser induced breakdown spectroscopy signal dependence on the interpulse delay is performed, and the results are compared with the ones obtained with a single laser pulse of energy corresponding to the sum of the two pulses. At the same time, the crater formed at the target surface is studied by video-confocal microscopy, and the variation in crater dimensions is correlated to the enhancement of the laser induced breakdown spectroscopy signal. The results obtained are consistent with the interpretation of the double-pulse laser induced breakdown spectroscopy signal enhancement in terms of the changes in ambient gas pressure produced by the shock wave induced by the first laser pulse

  11. Frequency-doubled diode laser for direct pumping of Ti:sapphire lasers

    DEFF Research Database (Denmark)

    Müller, André; Jensen, Ole Bjarlin; Unterhuber, Angelika

    2012-01-01

    . However, the superior electro-optical efficiency of the diode laser improves the overall efficiency of the Ti:sapphire laser by a factor > 2. The optical spectrum emitted by the Ti:sapphire laser shows a spectral width of 112 nm (FWHM). Based on autocorrelation measurements, pulse widths of less than 20...... fs are measured. These results open the opportunity of establishing diode laser pumped Ti:sapphire lasers for e.g. biophotonic applications like retinal optical coherence tomography or pumping of photonic crystal fibers for CARS microscopy.......A single-pass frequency doubled high-power tapered diode laser emitting nearly 1.3 W of green light suitable for direct pumping of Ti:sapphire lasers generating ultrashort pulses is demonstrated. The pump efficiencies reached 75 % of the values achieved with a commercial solid-state pump laser...

  12. Band alignment studies of Al2O3/CuGaO2 and ZnO/CuGaO2 hetero-structures grown by pulsed laser deposition

    International Nuclear Information System (INIS)

    Ajimsha, R.S.; Das, Amit K.; Joshi, M.P.; Kukreja, L.M.

    2014-01-01

    Highlights: • Band offset studies at the interface of Al 2 O 3 /CuGaO 2 and ZnO/CuGaO 2 hetero-structures were performed using X-ray photoelectron spectroscopy. • Valance band offsets (VBO) of these hetero-structures were obtained from respective XPS peak positions and VB spectra using Kraut's equation. • Al 2 O 3 /CuGaO 2 interface exhibited a type I band alignment with valance band offset (VBO) of 4.05 eV whereas type II band alignment was observed in ZnO/CuGaO 2 hetero-structure with a VBO of 2.32 eV. • Schematic band alignment diagram for the interface of these hetero-structures has been constructed. • Band offset and alignment studies of these heterojunctions are important for gaining insight to the design of various optoelectronic devices based on such hetero-structures. - Abstract: We have studied the band offset and alignment of pulsed laser deposited Al 2 O 3 /CuGaO 2 and ZnO/CuGaO 2 hetero-structures using photoelectron spectroscopy. Al 2 O 3 /CuGaO 2 interface exhibited a type I band alignment with valance band offset (VBO) of 4.05 eV whereas type II band alignment was observed in ZnO/CuGaO 2 hetero-structure with a VBO of 2.32 eV. Schematic band alignment diagram for the interface of these hetero-structures has been constructed. Band offset and alignment studies of these heterojunctions are important for gaining insight to the design of various optoelectronic devices based on such hetero-structures

  13. Cascade Type-I Quantum Well GaSb-Based Diode Lasers

    Directory of Open Access Journals (Sweden)

    Leon Shterengas

    2016-05-01

    Full Text Available Cascade pumping of type-I quantum well gain sections was utilized to increase output power and efficiency of GaSb-based diode lasers operating in a spectral region from 1.9 to 3.3 μm. Carrier recycling between quantum well gain stages was realized using band-to-band tunneling in GaSb/AlSb/InAs heterostructure complemented with optimized electron and hole injector regions. Coated devices with an ~100-μm-wide aperture and a 3-mm-long cavity demonstrated continuous wave (CW output power of 1.96 W near 2 μm, 980 mW near 3 μm, 500 mW near 3.18 μm, and 360 mW near 3.25 μm at 17–20 °C—a nearly or more than twofold increase compared to previous state-of-the-art diode lasers. The utilization of the different quantum wells in the cascade laser heterostructure was demonstrated to yield wide gain lasers, as often desired for tunable laser spectroscopy. Double-step etching was utilized to minimize both the internal optical loss and the lateral current spreading penalties in narrow-ridge lasers. Narrow-ridge cascade diode lasers operate in a CW regime with ~100 mW of output power near and above 3 μm and above 150 mW near 2 μm.

  14. Estimation of the Maximum Output Power of Double-Clad Photonic Crystal Fiber Laser

    International Nuclear Information System (INIS)

    Chen Yue-E; Wang Yong; Qu Xi-Long

    2012-01-01

    Compared with traditional optical fiber lasers, double-clad photonic crystal fiber (PCF) lasers have larger surface-area-to-volume ratios. With an increase of output power, thermal effects may severely restrict output power and deteriorate beam quality of fiber lasers. We utilize the heat-conduction equations to estimate the maximum output power of a double-clad PCF laser under natural-convection, air-cooling, and water-cooling conditions in terms of a certain surface-volume heat ratio of the PCF. The thermal effects hence define an upper power limit of double-clad PCF lasers when scaling output power. (fundamental areas of phenomenology(including applications))

  15. Broadband tunability of gain-flattened quantum-well semiconductor lasers with an external grating

    International Nuclear Information System (INIS)

    Mittelstein, M.; Mehuys, D.; Yariv, A.; Sarfaty, R.; Ungar, J.E.

    1989-01-01

    Semiconductor injection lasers are known to be tunable over a range of order kΒ · T. Quantum-well lasers, in particular, are shown to exhibit flattened, broadband gain spectra at a particular pumping condition. The gain requirement for a grating-tuned external cavity configuration is examined and is applied to a semiconductor quantum-well laser with an optimized length of gain region. The coupled-cavity formalism is employed to examine the conditions for continuous tuning. The possible tuning range of double-heterostructure lasers is compared to that of quantum-well lasers. The predicted broadband tunability of quantum-well lasers is confirmed experimentally by grating-tuning of uncoated lasers exceeding 120 nm, with single, longitudinal mode output power exceeding 300 mW

  16. Single-mode molecular beam epitaxy grown PbEuSeTe/PbTe buried-heterostructure diode lasers for CO2 high-resolution spectroscopy

    International Nuclear Information System (INIS)

    Feit, Z.; Kostyk, D.; Woods, R.J.; Mak, P.

    1991-01-01

    Buried-heterostructure tunable PbEuSeTe/PbTe lasers were fabricated using a two-stage molecular beam epitaxy growth procedure. Improvements in the processing technique yielded lasers that show performance characteristics significantly better than those reported previously. A continuous wave (cw) operating temperature of 203 K was realized, which is the highest cw operating temperature ever reported for lead-chalcogenides diode lasers. This laser exhibited exceptionally low-threshold currents of 1.4 mA at 90 K and 43 mA at 160 K with single-mode operation for injection currents up to 30I th and 0.18 mW power at 100 K. The usefulness of the laser, when operating cw at 200 K, was demonstrated by the ability to perform high-resolution spectroscopy of a low-pressure CO 2 gas sample

  17. Structural, surface potential and optical studies of AlGaN based double heterostructures irradiated by 120 MeV Si{sup 9+} swift heavy ions

    Energy Technology Data Exchange (ETDEWEB)

    Arivazhagan, P., E-mail: arivazhaganau2008@gmail.com [Crystal Growth Centre, Anna University, Chennai, 600 025 (India); Ramesh, R.; Balaji, M. [Crystal Growth Centre, Anna University, Chennai, 600 025 (India); Asokan, K. [Inter-University Accelerator Centre (IUAC), New Delhi (India); Baskar, K. [Crystal Growth Centre, Anna University, Chennai, 600 025 (India)

    2016-09-15

    The Al{sub 0.33}Ga{sub 0.77}N/Al{sub 0.14}Ga{sub 0.86}N based double heterostructure was irradiated using Si{sup 9+} ion at room temperature (RT) and liquid nitrogen temperature (LNT) with four dissimilar ion fluence. The effect of Si{sup 9+} ion irradiation in dislocation densities and in-plane strain of GaN layer were discussed. The in-plane strain values of Al{sub x}Ga{sub 1-x}N layers were calculated from asymmetric reciprocal space mapping (RSM). The surface modification and the variation in phase shift on Al{sub 0.33}Ga{sub 0.77}N surfaces due to the irradiation were measured by Electrostatic Force Microscopy (EFM). The capacitance of the tip-sample system was determined from EFM. The band edge emissions of heterostructures were measured by the room temperature phototluminescence (PL) and the shift in the Al{sub 0.14}Ga{sub 0.86}N active layer emission peaks towards the low energy side at low fluence ion irradiation has been noted. - Highlights: • Effects of Si{sup 9+} ion irradiation on AlGaN double heterostructures were investigated. • Dislocation densities of GaN reduced at liquid nitrogen temperature irradiation. • Variation in phase shift on Al{sub 0.33}Ga{sub 0.77}N surfaces was measured by EFM. • Capacitance per unit area values of AFM tip-sample surface system were calculated. • Si{sup 9+} irradiations play an important role to tune the energy gap in Al{sub 0.14}Ga{sub 0.86}N.

  18. Preparation of PZT/YBCO/YAlO heterostructure thin films by KrF excimer laser ablation

    International Nuclear Information System (INIS)

    Ebihara, Kenji; Kurogi, Hiromitsu; Yamagata, Yukihiko; Ikegami, Tomoaki; Grishin, A.M.

    1998-01-01

    The perovskite oxide YBa 2 Cu 3 O 7-x (YBCO) and Pb(Zr x Ti 1-x )O 3 (PZT) thin films have been deposited for superconducting-ferroelectric devices. KrF excimer laser ablation technique was used at the deposition conditions of 200--600 mTorr O 2 , 2-3J/cm 2 and 5--10 Hz operation frequency. Heterostructures of PZT-YBCO-YAlO 3 :Nd show the zero resistivity critical temperature of 82 K and excellent ferroelectric properties of remnant polarization 32 microC/cm 2 , coercive force of 80 kV/cm and dielectric constant 800. Cycling fatigue characteristics and leakage current are also discussed

  19. Double Tunneling Injection Quantum Dot Lasers for High Speed Operation

    Science.gov (United States)

    2017-10-23

    Double Tunneling-Injection Quantum Dot Lasers for High -Speed Operation The views, opinions and/or findings contained in this report are those of...SECURITY CLASSIFICATION OF: 1. REPORT DATE (DD-MM-YYYY) 4. TITLE AND SUBTITLE 13. SUPPLEMENTARY NOTES 12. DISTRIBUTION AVAILIBILITY STATEMENT 6...State University Title: Double Tunneling-Injection Quantum Dot Lasers for High -Speed Operation Report Term: 0-Other Email: asryan@vt.edu Distribution

  20. Ultrafast switching in wetting properties of TiO2/YSZ/Si(001) epitaxial heterostructures induced by laser irradiation

    International Nuclear Information System (INIS)

    Bayati, M. R.; Molaei, R.; Narayan, J.; Joshi, S.; Narayan, R. J.

    2013-01-01

    We have demonstrated dark hydrophilicity of single crystalline rutile TiO 2 (100) thin films, in which rapid switching from a hydrophobic to a hydrophilic surface was achieved using nanosecond excimer laser irradiation. The TiO 2 /YSZ/Si(001) single crystalline heterostructures were grown by pulsed laser deposition and were subsequently irradiated by a single pulse of a KrF excimer laser at several energies. The wettability of water on the surfaces of the samples was evaluated. The samples were hydrophobic prior to laser annealing and turned hydrophilic after laser annealing. Superhydrophilic surfaces were obtained at higher laser energy densities (e.g., 0.32 J.cm −2 ). The stoichiometries of the surface regions of the samples before and after laser annealing were examined using XPS. The results revealed the formation of oxygen vacancies on the surface, which are surmised to be responsible for the observed superhydrophilic behavior. According to the AFM images, surface smoothening was greater in films that were annealed at higher laser energy densities. The samples exhibited hydrophobic behavior after being placed in ambient atmosphere. The origin of laser induced wetting behavior was qualitatively understood to stem from an increase of point defects near the surface, which lowered the film/water interfacial energy. This type of rapid hydrophobic/hydrophilic switching may be used to facilitate fabrication of electronic and photonic devices with novel properties.

  1. Observation of the i = 1/2 fractional quantum Hall plateau in AlGaAs/GaAs/AlGaAs selectively doped double heterostructures

    International Nuclear Information System (INIS)

    Lindelof, P.E.; Bruus, H.; Taboryski, R.; Soerensen, C.B.

    1989-01-01

    An inverted and a normal GaAs/AlGaAs interface grown back to back in a socalled selectively doped double heterostructure (SD DH) has been studied in magnetic fields up to 12 tesla and at temperatures down to 0.3 K. The longitudinal resistance goes to zero at minima of the Shubnikov-de Haas oscillations. The Hall resistivity is found to exhibit the quantum Hall effect. By etching the surface of the double heterostructure wafer we create an unbalance in the density of electrons in the two parallel two-dimensional electronic sheets. Although we in this way create only a modest change in the electron densities, we observe a significant change in the Shubnikov-de Haas oscillations, which can be interpreted as a beat between the oscillations of two electron layers with different densities. At the same time we observe a significant variation of the width of the quantum Hall steps. The most astonishing feature of our results is a clear quantum Hall plateou at 1/2 filling in each of the two parallel layers observed at temperatures below 1 K at a magnetic field above 10 T. Weak localization was also studied and such experiments are consistent with two parallel and independent two-dimensional electronic layers. (orig.)

  2. Features of single and double ionization processes induced by few cycle laser pulses

    International Nuclear Information System (INIS)

    Starace, A.F.

    2005-01-01

    Full text: The advent of laser pulses with attosecond pulse lengths ushers in the regime of few cycle laser pulse interactions with atoms and ions, including the interesting cases of single and half cycle laser pulses. In this talk I will present results of recent studies of single electron ionization/detachment and double electron ionization/detachment produced by a few cycle laser pulse. For the former case, we shall demonstrate that the ionized/detached electron momentum distribution reflects the interference of electron probability wave packets produced by each half cycle of a single cycle pulse. Also, that the ionized/detached electron momentum distribution uniquely characterizes the phase of the single cycle laser pulse within the laser pulse envelope. Regarding double ionization/detachment, our numerical experiments have shown that single cycle and double half cycle pulses produce different electron angular distributions. Some double ionization features that are present only in the single cycle case can only have been produced by electron impact ionization during rescattering of an initially ionized electron and thus represent a sensitive measure of the rescattering process. Refs. 2 (author)

  3. Heterostructures (CaSrBa)F2 on InP for Optoelectronics

    National Research Council Canada - National Science Library

    Pyshkin, Sergei

    1995-01-01

    .... MBE and Laser Vacuum Epitaxy (LVE) growth methods for semiconductor-semiconductor (SS) and semiconductor-crystalline dielectric-semiconductor heterostructures are considered as well as experimental facilities for these processes are elaborated.

  4. Femtosecond-laser inscribed double-cladding waveguides in Nd:YAG crystal: a promising prototype for integrated lasers.

    Science.gov (United States)

    Liu, Hongliang; Chen, Feng; Vázquez de Aldana, Javier R; Jaque, D

    2013-09-01

    We report on the design and implementation of a prototype of optical waveguides fabricated in Nd:YAG crystals by using femtosecond-laser irradiation. In this prototype, two concentric tubular structures with nearly circular cross sections of different diameters have been inscribed in the Nd:YAG crystals, generating double-cladding waveguides. Under 808 nm optical pumping, waveguide lasers have been realized in the double-cladding structures. Compared with single-cladding waveguides, the concentric tubular structures, benefiting from the large pump area of the outermost cladding, possess both superior laser performance and nearly single-mode beam profile in the inner cladding. Double-cladding waveguides of the same size were fabricated and coated by a thin optical film, and a maximum output power of 384 mW and a slope efficiency of 46.1% were obtained. Since the large diameters of the outer claddings are comparable with those of the optical fibers, this prototype paves a way to construct an integrated single-mode laser system with a direct fiber-waveguide configuration.

  5. Microstructures and growth mechanisms of GaN films epitaxially grown on AlN/Si hetero-structures by pulsed laser deposition at different temperatures.

    Science.gov (United States)

    Wang, Wenliang; Yang, Weijia; Lin, Yunhao; Zhou, Shizhong; Li, Guoqiang

    2015-11-13

    2 inch-diameter GaN films with homogeneous thickness distribution have been grown on AlN/Si(111) hetero-structures by pulsed laser deposition (PLD) with laser rastering technique. The surface morphology, crystalline quality, and interfacial property of as-grown GaN films are characterized in detail. By optimizing the laser rastering program, the ~300 nm-thick GaN films grown at 750 °C show a root-mean-square (RMS) thickness inhomogeneity of 3.0%, very smooth surface with a RMS surface roughness of 3.0 nm, full-width at half-maximums (FWHMs) for GaN(0002) and GaN(102) X-ray rocking curves of 0.7° and 0.8°, respectively, and sharp and abrupt AlN/GaN hetero-interfaces. With the increase in the growth temperature from 550 to 850 °C, the surface morphology, crystalline quality, and interfacial property of as-grown ~300 nm-thick GaN films are gradually improved at first and then decreased. Based on the characterizations, the corresponding growth mechanisms of GaN films grown on AlN/Si hetero-structures by PLD with various growth temperatures are hence proposed. This work would be beneficial to understanding the further insight of the GaN films grown on Si(111) substrates by PLD for the application of GaN-based devices.

  6. Resonant Photonic States in Coupled Heterostructure Photonic Crystal Waveguides

    Directory of Open Access Journals (Sweden)

    Sabarinathan J

    2010-01-01

    Full Text Available Abstract In this paper, we study the photonic resonance states and transmission spectra of coupled waveguides made from heterostructure photonic crystals. We consider photonic crystal waveguides made from three photonic crystals A, B and C, where the waveguide heterostructure is denoted as B/A/C/A/B. Due to the band structure engineering, light is confined within crystal A, which thus act as waveguides. Here, photonic crystal C is taken as a nonlinear photonic crystal, which has a band gap that may be modified by applying a pump laser. We have found that the number of bound states within the waveguides depends on the width and well depth of photonic crystal A. It has also been found that when both waveguides are far away from each other, the energies of bound photons in each of the waveguides are degenerate. However, when they are brought close to each other, the degeneracy of the bound states is removed due to the coupling between them, which causes these states to split into pairs. We have also investigated the effect of the pump field on photonic crystal C. We have shown that by applying a pump field, the system may be switched between a double waveguide to a single waveguide, which effectively turns on or off the coupling between degenerate states. This reveals interesting results that can be applied to develop new types of nanophotonic devices such as nano-switches and nano-transistors.

  7. Theoretical model for a background noise limited laser-excited optical filter for doubled Nd lasers

    Science.gov (United States)

    Shay, Thomas M.; Garcia, Daniel F.

    1990-01-01

    A simple theoretical model for the calculation of the dependence of filter quantum efficiency versus laser pump power in an atomic Rb vapor laser-excited optical filter is reported. Calculations for Rb filter transitions that can be used to detect the practical and important frequency-doubled Nd lasers are presented. The results of these calculations show the filter's quantum efficiency versus the laser pump power. The required laser pump powers required range from 2.4 to 60 mW/sq cm of filter aperture.

  8. 5W intracavity frequency-doubled green laser for laser projection

    Science.gov (United States)

    Yan, Boxia; Bi, Yong; Li, Shu; Wang, Dongdong; Wang, Dongzhou; Qi, Yan; Fang, Tao

    2014-11-01

    High power green laser has many applications such as high brightness laser projection and large screen laser theater. A compact and high power green-light source has been developed in diode-pumped solid-state laser based on MgO doped periodically poled LiNbO3 (MgO:PPLN). 5W fiber coupled green laser is achieved by dual path Nd:YVO4/MgO:PPLN intra-cacity frequency-doubled. Single green laser maximum power 2.8W at 532nm is obtained by a 5.5W LD pumped, MgO:PPLN dimensions is 5mm(width)×1mm(thickness)×2mm(length), and the optical to optical conversion efficiency is 51%. The second LD series connected with the one LD, the second path green laser is obtained using the same method. Then the second path light overlap with the first path by the reflection mirrors, then couple into the fiber with a focus mirror. Dual of LD, Nd:YVO4, MgO:PPLN are placed on the same heat sink using a TEC cooling, the operating temperature bandwidth is about 12°C and the stablity is 5% in 96h. A 50×50×17mm3 laser module which generated continuous-wave 5 W green light with high efficiency and width temperature range is demonstrated.

  9. Diffraction-limited 577 nm true-yellow laser by frequency doubling of a tapered diode laser

    Science.gov (United States)

    Christensen, Mathias; Vilera, Mariafernanda; Noordegraaf, Danny; Hansen, Anders K.; Buß, Thomas; Jensen, Ole B.; Skovgaard, Peter M. W.

    2018-02-01

    A wide range of laser medical treatments are based on coagulation of blood by absorption of the laser radiation. It has, therefore, always been a goal of these treatments to maximize the ratio of absorption in the blood to that in the surrounding tissue. For this purpose lasers at 577 nm are ideal since this wavelength is at the peak of the absorption in oxygenated hemoglobin. Furthermore, 577 nm has a lower absorption in melanin when compared to green wavelengths (515 - 532 nm), giving it an advantage when treating at greater penetration depth. Here we present a laser system based on frequency doubling of an 1154 nm Distributed Bragg Reflector (DBR) tapered diode laser, emitting 1.1 W of single frequency and diffraction limited yellow light at 577 nm, corresponding to a conversion efficiency of 30.5%. The frequency doubling is performed in a single pass configuration using a cascade of two bulk non-linear crystals. The system is power stabilized over 10 hours with a standard deviation of 0.13% and the relative intensity noise is measured to be 0.064 % rms.

  10. Combining Raman and laser induced breakdown spectroscopy by double pulse lasing.

    Science.gov (United States)

    Lednev, Vasily N; Pershin, Sergey M; Sdvizhenskii, Pavel A; Grishin, Mikhail Ya; Fedorov, Alexander N; Bukin, Vladimir V; Oshurko, Vadim B; Shchegolikhin, Alexander N

    2018-01-01

    A new approach combining Raman spectrometry and laser induced breakdown spectrometry (LIBS) within a single laser event was suggested. A pulsed solid state Nd:YAG laser running in double pulse mode (two frequency-doubled sequential nanosecond laser pulses with dozens microseconds delay) was used to combine two spectrometry methods within a single instrument (Raman/LIBS spectrometer). First, a low-energy laser pulse (power density far below ablation threshold) was used for Raman measurements while a second powerful laser pulse created the plasma suitable for LIBS analysis. A short time delay between two successive pulses allows measuring LIBS and Raman spectra at different moments but within a single laser flash-lamp pumping. Principal advantages of the developed instrument include high quality Raman/LIBS spectra acquisition (due to optimal gating for Raman/LIBS independently) and absence of target thermal alteration during Raman measurements. A series of high quality Raman and LIBS spectra were acquired for inorganic salts (gypsum, anhydrite) as well as for pharmaceutical samples (acetylsalicylic acid). To the best of our knowledge, the quantitative analysis feasibility by combined Raman/LIBS instrument was demonstrated for the first time by calibration curves construction for acetylsalicylic acid (Raman) and copper (LIBS) in gypsum matrix. Combining ablation pulses and Raman measurements (LIBS/Raman measurements) within a single instrument makes it an efficient tool for identification of samples hidden by non-transparent covering or performing depth profiling analysis including remote sensing. Graphical abstract Combining Raman and laser induced breakdown spectroscopy by double pulse lasing.

  11. Giant magnetoelectric effect in pure manganite-manganite heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Paul, Sanjukta; Pankaj, Ravindra; Yarlagadda, Sudhakar; Majumdar, Pinaki; Littlewood, Peter B.

    2017-11-01

    Obtaining strong magnetoelectric couplings in bulk materials and heterostructures is an ongoing challenge. We demonstrate that manganite heterostructures of the form (Insulator) /(LaMnO3)(n)/Interface/(CaMnO3)(n)/(Insulator) show strong multiferroicity in magnetic manganites where ferroelectric polarization is realized by charges leaking from LaMnO3 to CaMnO3 due to repulsion. Here, an effective nearest-neighbor electron-electron (electron-hole) repulsion (attraction) is generated by cooperative electron-phonon interaction. Double exchange, when a particle virtually hops to its unoccupied neighboring site and back, produces magnetic polarons that polarize antiferromagnetic regions. Thus a striking giant magnetoelectric effect ensues when an external electrical field enhances the electron leakage across the interface.

  12. Modeling of anisotropic properties of double quantum rings by the terahertz laser field.

    Science.gov (United States)

    Baghramyan, Henrikh M; Barseghyan, Manuk G; Kirakosyan, Albert A; Ojeda, Judith H; Bragard, Jean; Laroze, David

    2018-04-18

    The rendering of different shapes of just a single sample of a concentric double quantum ring is demonstrated realizable with a terahertz laser field, that in turn, allows the manipulation of electronic and optical properties of a sample. It is shown that by changing the intensity or frequency of laser field, one can come to a new set of degenerated levels in double quantum rings and switch the charge distribution between the rings. In addition, depending on the direction of an additional static electric field, the linear and quadratic quantum confined Stark effects are observed. The absorption spectrum shifts and the additive absorption coefficient variations affected by laser and electric fields are discussed. Finally, anisotropic electronic and optical properties of isotropic concentric double quantum rings are modeled with the help of terahertz laser field.

  13. Comparative study of LaNiO$_3$/LaAlO$_3$ heterostructures grown by pulsed laser deposition and oxide molecular beam epitaxy

    OpenAIRE

    Wrobel, F.; Mark, A. F.; Christiani, G.; Sigle, W.; Habermeier, H. -U.; van Aken, P. A.; Logvenov, G.; Keimer, B.; Benckiser, E.

    2017-01-01

    Variations in growth conditions associated with different deposition techniques can greatly affect the phase stability and defect structure of complex oxide heterostructures. We synthesized superlattices of the paramagnetic metal LaNiO3 and the large band gap insulator LaAlO3 by atomic layer-by-layer molecular beam epitaxy (MBE) and pulsed laser deposition (PLD) and compared their crystallinity, microstructure as revealed by high-resolution transmission electron microscopy images and resistiv...

  14. Scattering (stochastic) recoupling of a coupled ten-stripe AlGaAs-GaAs-InGaAs quantum-well heterostructure laser

    Science.gov (United States)

    Kellogg, D. A.; Holonyak, N.

    2001-04-01

    Data are presented on coupled ten-stripe AlGaAs-GaAs-InGaAs quantum well heterostructure (QWH) lasers recoupled stochastically at the cleaved end mirrors. Recoupling of neighboring elements of a ten-stripe laser is accomplished by the scattering (random feedback) afforded by applying ˜10-μm-diam Al powder or 0.3 μm α-Al2O3 polishing compound in microscopy immersion oil or in epoxy at the cleaved ends (mirrors). Data on QWH samples with the end mirrors coated with the scatterer (Al or Al2O3 powder in "liquid") exhibit spectral and far-field broadening, as well as increased laser threshold because of the reduced cavity Q. Single mode operation is possible with the conventional evanescent wave coupling of the ten-stripe QWH and is destroyed, even the laser operation itself, with the scattering recoupling (dephasing) at the end mirrors, which is reversible (removable). The narrow ten-stripe QWH laser with strong end-mirror scattering, a long amplifier with random feedback, indicates that a photopumped III-V or II-VI powder (a random "wall" cavity) has little or no merit.

  15. AlGaAs/GaAs laser diode bars (λ = 808 nm) with improved thermal stability

    International Nuclear Information System (INIS)

    Marmalyuk, A A; Ladugin, M A; Andreev, A Yu; Telegin, K Yu; Yarotskaya, I V; Meshkov, A S; Konyaev, V P; Sapozhnikov, S M; Lebedeva, E I; Simakov, V A

    2013-01-01

    Two series of AlGaAs/GaAs laser heterostructures have been grown by metal-organic vapour phase epitaxy, and 808-nm laser diode bars fabricated from the heterostructures have been investigated. The heterostructures differed in waveguide thickness and quantum well depth. It is shown that increasing the barrier height for charge carriers in the active region has an advantageous effect on the output parameters of the laser sources in the case of the heterostructures with a narrow symmetric waveguide: the slope of their power – current characteristics increased from 0.9 to 1.05 W A -1 . Thus, the configuration with a narrow waveguide and deep quantum well is better suited for high-power laser diode bars under hindered heat removal conditions. (lasers)

  16. AlGaAs/GaAs laser diode bars (λ = 808 nm) with improved thermal stability

    Energy Technology Data Exchange (ETDEWEB)

    Marmalyuk, A A; Ladugin, M A; Andreev, A Yu; Telegin, K Yu; Yarotskaya, I V; Meshkov, A S; Konyaev, V P; Sapozhnikov, S M; Lebedeva, E I; Simakov, V A [Open Joint-Stock Company M.F. Stel' makh Polyus Research Institute, Moscow (Russian Federation)

    2013-10-31

    Two series of AlGaAs/GaAs laser heterostructures have been grown by metal-organic vapour phase epitaxy, and 808-nm laser diode bars fabricated from the heterostructures have been investigated. The heterostructures differed in waveguide thickness and quantum well depth. It is shown that increasing the barrier height for charge carriers in the active region has an advantageous effect on the output parameters of the laser sources in the case of the heterostructures with a narrow symmetric waveguide: the slope of their power – current characteristics increased from 0.9 to 1.05 W A{sup -1}. Thus, the configuration with a narrow waveguide and deep quantum well is better suited for high-power laser diode bars under hindered heat removal conditions. (lasers)

  17. Single and double long pulse laser ablation of aluminum induced in air and water ambient

    International Nuclear Information System (INIS)

    Akbari Jafarabadi, Marzieh; Mahdieh, Mohammad Hossein

    2017-01-01

    Highlights: • Laser ablation of aluminum target by single and double pulse (∼ 5 ns delay) in ambient air and distilled water • Comparing with air, in ambient water, plasma confinement results in higher crater depth. • In comparison with single pulse laser ablation, the absorption of the laser pulse energy is higher for double pulse regime. • As a result of ablated material expansion, the crater depth is decreased if the target is placed at lower depth. - Abstract: In this paper, single pulse and double pulse laser ablation of an aluminum target in two interaction ambient was investigated experimentally. The interaction was performed by nanosecond Nd:YAG laser beam in air and four depths (i.e. 9, 13, 17, and 21 mm) of distilled water ambient. The irradiation was carried out in single and collinear double pulse configurations in both air and liquid ambient. Crater geometry (depth and diameter) was measured by an optical microscope. The results indicated that the crater geometry strongly depends on both single pulse and double pulse configurations and interaction ambient. In single pulse regime, the crater diameter is higher for all water depths compared to that of air. However, the crater depth, depend on water depth, is higher or lower than the crater depth in air. In double pulse laser ablation, there are greater values for both crater diameters and crater depths in the water.

  18. 303 nm continuous wave ultraviolet laser generated by intracavity frequency-doubling of diode-pumped Pr3+:LiYF4 laser

    Science.gov (United States)

    Zhu, Pengfei; Zhang, Chaomin; Zhu, Kun; Ping, Yunxia; Song, Pei; Sun, Xiaohui; Wang, Fuxin; Yao, Yi

    2018-03-01

    We demonstrate an efficient and compact ultraviolet laser at 303 nm generated by intracavity frequency doubling of a continuous wave (CW) laser diode-pumped Pr3+:YLiF4 laser at 607 nm. A cesium lithium borate (CLBO) crystal, cut for critical type I phase matching at room temperature, is used for second-harmonic generation (SHG) of the fundamental laser. By using an InGaN laser diode array emitting at 444.3 nm with a maximum incident power of 10 W, as high as 68 mW of CW output power at 303 nm is achieved. The output power stability in 4 h is better than 2.85%. To the best of our knowledge, this is high efficient UV laser generated by frequency doubling of an InGaN laser diode array pumped Pr3+:YLiF4 laser.

  19. Electron-lattice energy relaxation in laser-excited thin-film Au-insulator heterostructures studied by ultrafast MeV electron diffraction.

    Science.gov (United States)

    Sokolowski-Tinten, K; Shen, X; Zheng, Q; Chase, T; Coffee, R; Jerman, M; Li, R K; Ligges, M; Makasyuk, I; Mo, M; Reid, A H; Rethfeld, B; Vecchione, T; Weathersby, S P; Dürr, H A; Wang, X J

    2017-09-01

    We apply time-resolved MeV electron diffraction to study the electron-lattice energy relaxation in thin film Au-insulator heterostructures. Through precise measurements of the transient Debye-Waller-factor, the mean-square atomic displacement is directly determined, which allows to quantitatively follow the temporal evolution of the lattice temperature after short pulse laser excitation. Data obtained over an extended range of laser fluences reveal an increased relaxation rate when the film thickness is reduced or the Au-film is capped with an additional insulator top-layer. This behavior is attributed to a cross-interfacial coupling of excited electrons in the Au film to phonons in the adjacent insulator layer(s). Analysis of the data using the two-temperature-model taking explicitly into account the additional energy loss at the interface(s) allows to deduce the relative strength of the two relaxation channels.

  20. Large area double p-i-n heterostructure for signal multiplexing and demultiplexing in the visible range

    International Nuclear Information System (INIS)

    Vieira, M.; Louro, P.; Fernandes, M.; Vieira, M.A.; Fantoni, A.; Barata, M.

    2009-01-01

    Results on the use of a double a-SiC:H p-i-n heterostructure for signal multiplexing and demultiplexing applications in the visible range, are presented. Modulated monochromatic beams together (multiplexing mode), or a single polychromatic beam (demultiplexing mode) impinge in the device and are absorbed, accordingly to their wavelength, giving rise to a time and wavelength dependent electrical field modulation. Red, green and blue pulsed input channels are transmitted together, each one with a specific transmission rate. The combined optical signal is analyzed by reading out, under different applied voltages, the generated photocurrent. Results show that in the multiplexing mode the output signal is balanced by the wavelength and transmission rate of each input channel, keeping the memory of the incoming optical carriers. In the demultiplexing mode the photocurrent is controlled by the applied voltage allowing regaining the transmitted information. An electrical model gives insight into the device operation.

  1. Evolution of plasma double layers in laser-ablation plumes

    International Nuclear Information System (INIS)

    Gurlui, S.; Sanduloviciu, M.; Mihesan, C.; Ziskind, M.; Focsa, C.

    2005-01-01

    The double layers (DLs) are one of the most complex problems of the plasma physics. These layers are apparently important not only in laboratory plasmas and laser-ablation plasma plumes but also in natural phenomena, e.g. the aurora and fire balls.This work studies the dynamics of the double layers in a laser ablation plume from different targets irradiated by a Nd: YAG 10 ns pulsed laser. The plasma formation was studied by means of both Langmuir probe and mass spectrometry methods using an experimental set-up developed for the study of environmental or technological interest samples. The ionic current distribution in plasma plume formation was recorded in different experimental conditions. We have found that it depends on the laser energy, the pressure of the buffer gas and the probe position. The periodical oscillations recorded in different experimental conditions prove that these plasma formations (DLs) are local physical systems able to accumulate and release energy. Acting as storing and releasing energy elements, the DLs can sustain periodical or non-periodical variations of the current or of the other global parameters of the plasma. (author)

  2. Frequency doubled dye laser with a servo-tuned crystal

    Energy Technology Data Exchange (ETDEWEB)

    Kuhl, J; Spitschan, H

    1975-01-01

    Spectral tuning of the uv output of a frequency doubled dye laser was successfully controlled by a servo motor system which tilts the nonlinear crystal appropriate for phase-matched second harmonic generation while the dye laser emission wavelength is tuned. The spatial direction of the generated uv beam was used as the regulating signal. The feasibility of this technique for spectroscopic applications was successfully tested.

  3. Q-switched pulse laser generation from double-cladding Nd:YAG ceramics waveguides.

    Science.gov (United States)

    Tan, Yang; Luan, Qingfang; Liu, Fengqin; Chen, Feng; Vázquez de Aldana, Javier Rodríguez

    2013-08-12

    This work reports on the Q-switched pulsed laser generation from double-cladding Nd:YAG ceramic waveguides. Double-cladding waveguides with different combination of diameters were inscribed into a sample of Nd:YAG ceramic. With an additional semiconductor saturable absorber, stable pulsed laser emission at the wavelength of 1064 nm was achieved with pulses of 21 ns temporal duration and ~14 μJ pulse energy at a repetition rate of 3.65 MHz.

  4. Short-wavelength soft-x-ray laser pumped in double-pulse single-beam non-normal incidence

    International Nuclear Information System (INIS)

    Zimmer, D.; Ros, D.; Guilbaud, O.; Habib, J.; Kazamias, S.; Zielbauer, B.; Bagnoud, V.; Ecker, B.; Aurand, B.; Kuehl, T.; Hochhaus, D. C.; Neumayer, P.

    2010-01-01

    We demonstrated a 7.36 nm Ni-like samarium soft-x-ray laser, pumped by 36 J of a neodymium:glass chirped-pulse amplification laser. Double-pulse single-beam non-normal-incidence pumping was applied for efficient soft-x-ray laser generation. In this case, the applied technique included a single-optic focusing geometry for large beam diameters, a single-pass grating compressor, traveling-wave tuning capability, and an optimized high-energy laser double pulse. This scheme has the potential for even shorter-wavelength soft-x-ray laser pumping.

  5. Transfer matrix approach to electron transport in monolayer MoS2/MoO x heterostructures

    Science.gov (United States)

    Li, Gen

    2018-05-01

    Oxygen plasma treatment can introduce oxidation into monolayer MoS2 to transfer MoS2 into MoO x , causing the formation of MoS2/MoO x heterostructures. We find the MoS2/MoO x heterostructures have the similar geometry compared with GaAs/Ga1‑x Al x As semiconductor superlattice. Thus, We employ the established transfer matrix method to analyse the electron transport in the MoS2/MoO x heterostructures with double-well and step-well geometries. We also considere the coupling between transverse and longitudinal kinetic energy because the electron effective mass changes spatially in the MoS2/MoO x heterostructures. We find the resonant peaks show red shift with the increasing of transverse momentum, which is similar to the previous work studying the transverse-momentum-dependent transmission in GaAs/Ga1‑x Al x As double-barrier structure. We find electric field can enhance the magnitude of peaks and intensify the coupling between longitudinal and transverse momentums. Moreover, higher bias is applied to optimize resonant tunnelling condition to show negative differential effect can be observed in the MoS2/MoO x system.

  6. Selective ablation of dental calculus with a frequency-doubled Alexandrite laser

    Science.gov (United States)

    Rechmann, Peter; Hennig, Thomas

    1996-01-01

    The aim of the study was the selective removal of dental calculus by means of pulsed lasers. In a first approach the optical characteristics of subgingival calculus were calculated using fluorescence emission spectroscopy (excitation laser: N2-laser, wavelength 337 nm, pulse duration 4 ns). Subgingival calculus seems to absorb highly in the ultraviolet spectral region up to 420 nm. According to these measurements a frequency doubled Alexandrite-laser (wavelength 377 nm, pulse duration 100 ns, repetition rate 110 Hz) was used to irradiate calculus located on enamel, at the cementum enamel junction and on the root surface (located on dentin or on cementum). Irradiation was performed perpendicular to the root surface with a laser fluence of 1 Jcm-2. During the irradiation procedure an effective water cooling-system was engaged. Histological investigations were done on undecalcified sections. As a result, engaging low fluences allows a fast and strictly selective removal of subgingival calculus. Even more the investigations revealed that supragingival calculus can be removed in a strictly selective manner engaging a frequency doubled Alexandrite-laser. No adverse side effects to the surrounding tissues could be found.

  7. Optimization problems of QW-SCH heterostructures AlGaAs/GaAs designed for working at 808 nm band

    International Nuclear Information System (INIS)

    Malag, A.; Kozlowska, A.; Strupinski, W.; Mozdzonek, M.; Dobrzanski, L.; Teodorczyk, M.; Mroziewicz, B.

    1999-01-01

    Semiconductor laser diodes (LDs) emitting in the 808 nm range found main field of application in the pumping systems of Nd 3+ :YAG lasers. Because of narrow absorption line of YAG material, narrow emission line of the laser pump exactly at the 808 nm wavelength is expected at the temperature optimised from the viewpoint of its stabilization (usually it is about 15 o C). To meet these requirements, an optimisation of the laser (AlGa)As heterostructure because of the composition and thickness of the constituent layers is necessary. In the communicate the design foundations, the characteristics of the manufactured LDs based on this design and intrinsic limitations of the possibility of 'tuning' the lasers to desired wavelength in the technological process are presented. The reported LDs are of the wide-stripe type with the Schottky-junction-isolation and have been manufactured from the MOVPE grown (Alga)As heterostructure. (author)

  8. High-power cw laser bars of the 750 – 790-nm wavelength range

    International Nuclear Information System (INIS)

    Degtyareva, N S; Kondakov, S A; Mikayelyan, G T; Gorlachuk, P V; Ladugin, M A; Marmalyuk, Aleksandr A; Ryaboshtan, Yu L; Yarotskaya, I V

    2013-01-01

    We have developed the effective design of semiconductor heterostructures, which allow one to fabricate cw laser diodes emitting in the 750 – 790-nm spectral range. The optimal conditions for fabrication of GaAsP/AlGaInP/GaAs heterostructures by MOCVD have been determined. It is shown that the use of quantum wells with a precisely defined quantity mismatch reduces the threshold current density and increases the external differential efficiency. The results of studies of characteristics of diode laser bars fabricated from these heterostructures are presented. (lasers)

  9. Stimulated resonance Raman spectroscopy: An alternative to laser-rf double resonance for ion spectroscopy

    International Nuclear Information System (INIS)

    Young, L.; Dinneen, T.; Mansour, N.B.

    1988-01-01

    Stimulated resonance Raman spectroscopy is presented as an alternative to laser-rf double resonance for obtaining high-precision measurements in ion beams. By use of a single-phase modulated laser beam to derive the two required fields, the laser--ion-beam alignment is significantly simplified. In addition, this method is especially useful in the low-frequency regime where the laser-rf double-resonance method encounters difficulties due to modifications of the ion-beam velocity distribution. These modifications, which result from interaction with the traveling rf wave used to induce magnetic dipole transitions, are observed and quantitatively modeled

  10. Sequential double photodetachment of He- in elliptically polarized laser fields

    Science.gov (United States)

    Génévriez, Matthieu; Dunseath, Kevin M.; Terao-Dunseath, Mariko; Urbain, Xavier

    2018-02-01

    Four-photon double detachment of the helium negative ion is investigated experimentally and theoretically for photon energies where the transient helium atom is in the 1 s 2 s 3S or 1 s 2 p P3o states, which subsequently ionize by absorption of three photons. Ionization is enhanced by intermediate resonances, giving rise to series of peaks in the He+ spectrum, which we study in detail. The He+ yield is measured in the wavelength ranges from 530 to 560 nm and from 685 to 730 nm and for various polarizations of the laser light. Double detachment is treated theoretically as a sequential process, within the framework of R -matrix theory for the first step and effective Hamiltonian theory for the second step. Experimental conditions are accurately modeled, and the measured and simulated yields are in good qualitative and, in some cases, quantitative agreement. Resonances in the double detachment spectra can be attributed to well-defined Rydberg states of the transient atom. The double detachment yield exhibits a strong dependence on the laser polarization which can be related to the magnetic quantum number of the intermediate atomic state. We also investigate the possibility of nonsequential double detachment with a two-color experiment but observe no evidence for it.

  11. Diode-pumped CW frequency-doubled Nd:CNGG-BiBO blue laser at 468 nm

    International Nuclear Information System (INIS)

    Lü, Y F; Xia, J; Lin, J Q; Gao, X; Dong, Y; Xu, L J; Sun, G C; Zhao, Z M; Tan, Y; Chen, J F; Liu, Z X; Li, C L; Cai, H X; Liu, Z T; Ma, Z Y; Ning, G B

    2011-01-01

    Efficient and compact blue laser output at 468 nm is generated by intracavity frequency doubling of a continuous-wave (CW) diode-pumped Nd:CNGG laser at 935 nm. With 17.8 W of diode pump power and the frequency-doubling crystal BiB 3 O 6 (BiBO), a maximum output power of 490 mW in the blue spectral range at 468 nm has been achieved, corresponding to an optical-to-optical conversion efficiency of 2.8%; the output power stability over 4 h is better than 2.6%. To the best of our knowledge, this is first work on intracavity frequency doubling of a diode pumped Nd:CNGG laser at 935 nm

  12. Shock dynamics induced by double-spot laser irradiation of layered targets

    Directory of Open Access Journals (Sweden)

    Aliverdiev Abutrab A.

    2015-06-01

    Full Text Available We studied the interaction of a double-spot laser beam with targets using the Prague Asterix Laser System (PALS iodine laser working at 0.44 μm wavelength and intensity of about 1015 W/cm2. Shock breakout signals were recorder using time-resolved self-emission from target rear side of irradiated targets. We compared the behavior of pure Al targets and of targets with a foam layer on the laser side. Results have been simulated using hydrodynamic numerical codes.

  13. Independent tunability of the double-mode-locked cw dye laser.

    LENUS (Irish Health Repository)

    Bourkoff, E

    1979-06-01

    We report a new configuration that enables the double-mode-locked cw dye laser to be independently tunable. In addition, the output coupling at each of the two wavelengths can be independently specified. A series of oscillographs shows some interesting features unique to double mode locking and also shows the effects of varying the two cavity lengths with respect to each other.

  14. Amplified emission and modified spectral features in an opal hetero-structure mediated by passive defect mode localization

    Science.gov (United States)

    Rout, Dipak; Kumar, Govind; Vijaya, R.

    2018-01-01

    A photonic crystal hetero-structure consisting of a passive planar defect of SiO2 thin film sandwiched between two identical opals grown by inward growing self-assembly method using Rhodamine-B dye-doped polystyrene microspheres is studied for the characteristics of dye emission. The optical properties and the defect mode characteristics of the hetero-structure are studied from the reflection and transmission measurements. Laser-induced fluorescence from the hetero-structure showed amplified and spectrally narrowed emission compared to the photonic crystal emphasizing the role of the defect mode and distributed feedback. The enhanced emission is also complemented by the reduction in fluorescence decay time in the case of the hetero-structure in comparison to the 3D photonic crystals.

  15. High power laser interaction with single and double layer targets

    Czech Academy of Sciences Publication Activity Database

    Borodziuk, S.; Demchenko, N. N.; Gus'kov, S. Yu.; Jungwirth, Karel; Kálal, M.; Kasperczuk, A.; Kondrashov, V. N.; Králiková, Božena; Krouský, Eduard; Limpouch, Jiří; Mašek, Karel; Pisarczyk, P.; Pisarczyk, T.; Pfeifer, Miroslav; Rohlena, Karel; Rozanov, V. B.; Skála, Jiří; Ullschmied, Jiří

    2005-01-01

    Roč. 35, č. 2 (2005), s. 241-262 ISSN 0078-5466 R&D Projects: GA MŠk(CZ) LN00A100; GA AV ČR(CZ) KSK2043105 Grant - others:EU(XE) HPRI-CT-1999-00053; RFBR(RU) 02-02-16966; IAEA(XE) 11655/RBF; INTAS(XX) 01-0572 Institutional research plan: CEZ:AV0Z10100523; CEZ:AV0Z20430508 Keywords : laser produced plasma * three-frame interferometry * macroparticle * single and double targets * crater * shock wave * laser energy absorption Subject RIV: BH - Optics, Masers, Lasers Impact factor: 0.459, year: 2005

  16. High-efficiency super capacitors based on hetero-structured α-MnO2 nanorods

    International Nuclear Information System (INIS)

    Ghouri, Zafar Khan; Shaheer Akhtar, M.; Zahoor, Awan; Barakat, Nasser A.M.; Han, Weidong; Park, Mira; Pant, Bishweshwar; Saud, Prem Singh; Lee, Cho Hye; Kim, Hak Yong

    2015-01-01

    Highlights: • Hetero-structured α-MnO 2 nanorods are prepared by a facile hydrothermal route. • It is applied as active electrode materials for supercapacitor. • A high specific capacitance of 298 Fg −1 with a superior long term cyclic stability is achieved. • Supercapacitor shows high specific capacitance retention 94% after 1000 cycles. - Abstract: Hetero-structured manganese dioxide nanorods with α phase (α-MnO 2 ) were prepared by a facile hydrothermal route at low temperature. X-ray diffraction, scanning electron microscopy, transmission electron microscopy and nitrogen adsorption–desorption measurements were used to characterize the prepared hetero-structured α-MnO 2 nanorods. Supercapacitive performance of the hetero-structured α-MnO 2 nanomaterials as active electrode material was evaluated by cyclic voltammetry (CV) in alkaline medium. The MnO 2 hetero-structure with 2 × 2 tunnels constructed from double chains of octahedral [MnO 6 ] structure yield a significantly high specific capacitance of 298 Fg −1 at 5 mV s −1 and demonstrated a superior long term cyclic stability, with specific capacitance retention about 94% after 1000 cycles. The superior supercapacitive performance of the hetero-structured α-MnO 2 electrode is due to its high specific surface area and unique hierarchy architecture which facilitate fast electron and ion transport

  17. Enhancement of efficiency and stability of phosphorescent OLEDs based on heterostructured light-emitting layers

    Energy Technology Data Exchange (ETDEWEB)

    Chin, Byung Doo, E-mail: bdchin@dankook.ac.kr [Department of Polymer Science and Engineering and Center for Photofunctional Energy Materials, Dankook University, Jukjeon-dong, Suji-gu, Yongin-si, Gyeonggi-do 448-701 (Korea, Republic of)

    2011-03-23

    The light-emitting efficiency and stability of a phosphorescent organic light-emitting device (OLED), whose emission characteristics are strongly dominated not only by the energy transfer but also by the charge carrier trapping influenced by heterostructured emissive layers, are studied. The variation of the material combination of the heterostructured emitter, both for mixed and double layer configuration, affects the charge injection behaviour, luminous efficiency and stability. Both double and mixed emitter configurations yield low-voltage and high-efficiency behaviour (51 lm W{sup -1} at 1000 cd m{sup -2}; 30 lm W{sup -1} at 10 000 cd m{sup -2}). Such an improvement in power efficiency at elevated brightness is sufficiently universal, while the enhancement of device half-lifetime is rather sensitive to the circumstantial layout of heterostructural emitters. With an optimal mixture of hole-transport type and electron-transport type, a half-lifetime of more than 2500 h at 4000 cd m{sup -2} is obtained, which is 8 times the half-lifetime of control devices with a single emitter structure. The origin and criterion for enhancement of efficiency and lifetime are discussed in terms of the carrier transport behaviour with a specific device architecture.

  18. IZO deposited by PLD on flexible substrate for organic heterostructures

    Science.gov (United States)

    Socol, M.; Preda, N.; Stanculescu, A.; Breazu, C.; Florica, C.; Rasoga, O.; Stanculescu, F.; Socol, G.

    2017-05-01

    In:ZnO (IZO) thin films were deposited on flexible plastic substrates by pulsed laser deposition (PLD) method. The obtained layers present adequate optical and electrical properties competitive with those based on indium tin oxide (ITO). The figure of merit (9 × 10-3 Ω-1) calculated for IZO layers demonstrates that high quality coatings can be prepared by this deposition technique. A thermal annealing (150 °C for 1 h) or an oxygen plasma etching (6 mbar for 10 min.) were applied to the IZO layers to evaluate the influence of these treatments on the properties of the transparent coatings. Using vacuum evaporation, organic heterostructures based on cooper phthalocyanine (CuPc) and 3,4,9,10-perylenetetracarboxylic dianhydride (PTCDA) were deposited on the untreated and treated IZO layers. The optical and electrical properties of the heterostructures were investigated by UV-Vis, FTIR and current-voltage ( I- V) measurements. For the heterostructure fabricated on IZO treated in oxygen plasma, an improvement in the current value with at least one order of magnitude was evidenced in the I- V characteristics recorded in dark conditions. Also, an increase in the current value for the heterostructure deposited on untreated IZO layer can be achieved by adding an organic layer such as tris-8-hydroxyquinoline aluminium (Alq3).

  19. Improvement of the beam quality of a broad-area diode laser using double feedback from two external mirrors

    DEFF Research Database (Denmark)

    Chi, M.; Bøgh, A.-S.; Thestrup, B.

    2004-01-01

    In this letter, a symmetric double-feedback configuration, to improve the beam quality of broad-area diode lasers is demonstrated. With this configuration, a symmetric double-lobed far field can be obtained, and this configuration leads to good beam quality. The beam quality factor M-2 of a diode...... laser with the emitting area 1 mumx200 mum is improved by using both the asymmetric single feedback and the symmetric double feedback. M-2 values of 4.3 for the asymmetric single-feedback laser system and 3.3 for the symmetric double-feedback laser system are obtained, whereas the M-2 value...... of the freely running laser is 42. The far and the near fields are also measured and compared for the three conditions. (C) 2004 American Institute of Physics....

  20. Intense laser effects on donor impurity in a cylindrical single and vertically coupled quantum dots under combined effects of hydrostatic pressure and applied electric field

    International Nuclear Information System (INIS)

    Duque, C.A.; Kasapoglu, E.; Sakiroglu, S.; Sari, H.; Soekmen, I.

    2010-01-01

    Using the effective mass and parabolic band approximations and a variational procedure we have calculated the combined effects of intense laser radiation, hydrostatic pressure, and applied electric field on shallow-donor impurity confined in cylindrical-shaped single and double GaAs-Ga 1-x Al x As QD. Several impurity positions and inputs of the heterostructure dimensions, hydrostatic pressure, and applied electric field have been considered. The laser effects have been introduced by a perturbative scheme in which the Coulomb and the barrier potentials are modified to obtain dressed potentials. Our findings suggest that (1) for on-center impurities in single QD the binding energy is a decreasing function of the dressing parameter and for small dot dimensions of the structures (lengths and radius) the binding energy is more sensitive to the dressing parameter, (2) the binding energy is an increasing/decreasing function of the hydrostatic pressure/applied electric field, (3) the effects of the intense laser field and applied electric field on the binding energy are dominant over the hydrostatic pressure effects, (4) in vertically coupled QD the binding energy for donor impurity located in the barrier region is smaller than for impurities in the well regions and can be strongly modified by the laser radiation, and finally (5) in asymmetrical double QD heterostructures the binding energy as a function of the impurity positions follows a similar behavior to the observed for the amplitude of probability of the noncorrelated electron wave function.

  1. High ionic conductivity in confined bismuth oxide-based heterostructures

    Directory of Open Access Journals (Sweden)

    Simone Sanna

    2016-12-01

    Full Text Available Bismuth trioxide in the cubic fluorite phase (δ-Bi2O3 exhibits the highest oxygen ionic conductivity. In this study, we were able to stabilize the pure δ-Bi2O3 at low temperature with no addition of stabilizer but only by engineering the interface, using highly coherent heterostructures made of alternative layers of δ-Bi2O3 and Yttria Stabilized Zirconia (YSZ, deposited by pulsed laser deposition. The resulting [δ-Bi2O3/YSZ] heterostructures are found to be stable over a wide temperature range (500-750 °C and exhibits stable high ionic conductivity over a long time comparable to the value of the pure δ-Bi2O3, which is approximately two orders of magnitude higher than the conductivity of YSZ bulk.

  2. High ionic conductivity in confined bismuth oxide-based heterostructures

    DEFF Research Database (Denmark)

    Sanna, Simone; Esposito, Vincenzo; Christensen, Mogens

    2016-01-01

    Bismuth trioxide in the cubic fluorite phase (δ-Bi2O3) exhibits the highest oxygen ionic conductivity. In this study, we were able to stabilize the pure -Bi2O3 at low temperature with no addition of stabilizer but only by engineering the interface, using highly coherent heterostructures made...... of alternative layers of δ-Bi2O3 and Yttria Stabilized Zirconia (YSZ), deposited by pulsed laser deposition. The resulting [δ-Bi2O3=YSZ] heterostructures are found to be stable over a wide temperature range (500-750 °C) and exhibits stable high ionic conductivity over a long time comparable to the value...... of the pure δ-Bi2O3, which is approximately two orders of magnitude higher than the conductivity of YSZ bulk....

  3. Double ionization of molecule H2 in intense ultrashort laser fields

    International Nuclear Information System (INIS)

    Le, Thu-Thuy; Nguyen, Ngoc-Ty

    2015-01-01

    By solving numerically the time-dependent Schrödinger equation (TDSE), we have calculated the double ionization probability when a vibrating hydrogen molecule interacts with intense ultrashort laser pulses. The results show that in the case of vibrating nuclei the double ionization probability is higher than that of the fixed nuclei. Additionally, the double ionization probability is larger if the molecule is vibrating in a higher level. This is due to the decreasing of ionization potential when the inter-nuclei separation increases. (paper)

  4. Possible role of double scattering in electron-atom scattering in a laser field

    International Nuclear Information System (INIS)

    Rabadan, I.; Mendez, L.; Dickinson, A.S.

    1996-01-01

    By considering observations of double-scattering effects in the excitation of the 2 1 P level of He, gas density values estimated for the laser-assisted elastic scattering experiments of Wallbank and Holmes (1993, 1994a,b) for which the Kroll-Watson approximation appears to fail. Using comparable densities for He and lower densities for Ar, and assuming the Kroll-Watson approximation for single-scattering events, differential cross sections are calculated including double scattering for laser-assisted scattering for a range of energies and scattering angles. Comparison with the observed values shows that double-scattering effects can give a semi-quantitative explanation of the apparent breakdown of the Kroll-Watson approximation in both He and Ar. (author)

  5. Double-pulse standoff laser-induced breakdown spectroscopy for versatile hazardous materials detection

    Energy Technology Data Exchange (ETDEWEB)

    Gottfried, Jennifer L. [U.S. Army Research Laboratory, AMSRD-ARL-WM-BD, Aberdeen Proving Ground, MD, 21005-5069 (United States)], E-mail: jennifer.gottfried@arl.army.mil; De Lucia, Frank C.; Munson, Chase A.; Miziolek, Andrzej W. [U.S. Army Research Laboratory, AMSRD-ARL-WM-BD, Aberdeen Proving Ground, MD, 21005-5069 (United States)

    2007-12-15

    We have developed a double-pulse standoff laser-induced breakdown spectroscopy (ST-LIBS) system capable of detecting a variety of hazardous materials at tens of meters. The use of a double-pulse laser improves the sensitivity and selectivity of ST-LIBS, especially for the detection of energetic materials. In addition to various metallic and plastic materials, the system has been used to detect bulk explosives RDX and Composition-B, explosive residues, biological species such as the anthrax surrogate Bacillus subtilis, and chemical warfare simulants at 20 m. We have also demonstrated the discrimination of explosive residues from various interferents on an aluminum substrate.

  6. High-resolution three-dimensional compositional imaging by double-pulse laser-induced breakdown spectroscopy

    International Nuclear Information System (INIS)

    Schiavo, C.; Grifoni, E.; Legnaioli, S.; Lorenzetti, G.; Poggialini, F.; Pagnotta, S.; Palleschi, V.; Menichetti, L.

    2016-01-01

    In this paper we present a new instrument specifically realized for high-resolution three-dimensional compositional analysis and mapping of materials. The instrument is based on the coupling of a Double-Pulse Laser-Induced Breakdown Spectroscopy (LIBS) instrument with an optical microscope. The compositional mapping of the samples is obtained by scanning the laser beam across the surface of the sample, while the in depth analysis is performed by sending multiple laser pulses on the same point. Depths of analysis of several tens of microns can be obtained. The instrument presented has definite advantages with respect to Laser Ablation-ICP Mass Spectrometry in many applications related to material analysis, biomedicine and environmental diagnostics. An application to the diagnostics of industrial ceramics is presented, demonstrating the feasibility of Double-Pulse LIBS Imaging and its advantages with respect to conventional single-pulse LIBS imaging.

  7. Current limitation by an electric double layer in ion laser discharges

    International Nuclear Information System (INIS)

    Torven, S.

    1977-12-01

    A theory for current limitation in ion laser discharges is investigated. The basic mechanism considered is saturation of the positive ion flux at an electric double layer by the limited flux of neutral atoms. The result is compared with a recently published synthesis of a large number of experimental data which agree well with those predicted by the double layer model

  8. New technique of skin embedded wire double-sided laser beam welding

    Science.gov (United States)

    Han, Bing; Tao, Wang; Chen, Yanbin

    2017-06-01

    In the aircraft industry, double-sided laser beam welding is an approved method for producing skin-stringer T-joints on aircraft fuselage panels. As for the welding of new generation aluminum-lithium alloys, however, this technique is limited because of high hot cracking susceptibility and strengthening elements' uneven distributions within weld. In the present study, a new technique of skin embedded wire double-sided laser beam welding (LBW) has been developed to fabricate T-joints consisting of 2.0 mm thick 2060-T8/2099-T83 aluminum-lithium alloys using eutectic alloy AA4047 filler wire. Necessary dimension parameters of the novel groove were reasonably designed for achieving crack-free welds. Comparisons were made between the new technique welded T-joint and conventional T-joint mainly on microstructure, hot crack, elements distribution features and mechanical properties within weld. Excellent crack-free microstructure, uniform distribution of silicon and superior tensile properties within weld were found in the new skin embedded wire double-sided LBW T-joints.

  9. High-efficiency super capacitors based on hetero-structured α-MnO{sub 2} nanorods

    Energy Technology Data Exchange (ETDEWEB)

    Ghouri, Zafar Khan [Department of BIN Fusion Technology, Chonbuk National University, Jeonju 561-756 (Korea, Republic of); Department of Organic materials and Fiber Engineering, Chonbuk National University, Jeonju 561-756 (Korea, Republic of); Shaheer Akhtar, M. [New & Renewable Energy Material Development Center (NewREC), Chonbuk National University, Jeonbuk (Korea, Republic of); Zahoor, Awan [Department of Chemical Engineering, NED University of Engineering & Technology, University Road, Karachi 75270 (Pakistan); Barakat, Nasser A.M., E-mail: nasser@jbnu.ac.kr [Department of Organic materials and Fiber Engineering, Chonbuk National University, Jeonju 561-756 (Korea, Republic of); Department of Chemical Engineering, Faculty of Engineering, El-Minia University, El-Minia (Egypt); Han, Weidong [Department of BIN Fusion Technology, Chonbuk National University, Jeonju 561-756 (Korea, Republic of); Park, Mira [Department of Organic materials and Fiber Engineering, Chonbuk National University, Jeonju 561-756 (Korea, Republic of); Pant, Bishweshwar; Saud, Prem Singh; Lee, Cho Hye [Department of BIN Fusion Technology, Chonbuk National University, Jeonju 561-756 (Korea, Republic of); Kim, Hak Yong, E-mail: khy@jbnu.ac.kr [Department of BIN Fusion Technology, Chonbuk National University, Jeonju 561-756 (Korea, Republic of)

    2015-09-05

    Highlights: • Hetero-structured α-MnO{sub 2} nanorods are prepared by a facile hydrothermal route. • It is applied as active electrode materials for supercapacitor. • A high specific capacitance of 298 Fg{sup −1} with a superior long term cyclic stability is achieved. • Supercapacitor shows high specific capacitance retention 94% after 1000 cycles. - Abstract: Hetero-structured manganese dioxide nanorods with α phase (α-MnO{sub 2}) were prepared by a facile hydrothermal route at low temperature. X-ray diffraction, scanning electron microscopy, transmission electron microscopy and nitrogen adsorption–desorption measurements were used to characterize the prepared hetero-structured α-MnO{sub 2} nanorods. Supercapacitive performance of the hetero-structured α-MnO{sub 2} nanomaterials as active electrode material was evaluated by cyclic voltammetry (CV) in alkaline medium. The MnO{sub 2} hetero-structure with 2 × 2 tunnels constructed from double chains of octahedral [MnO{sub 6}] structure yield a significantly high specific capacitance of 298 Fg{sup −1} at 5 mV s{sup −1} and demonstrated a superior long term cyclic stability, with specific capacitance retention about 94% after 1000 cycles. The superior supercapacitive performance of the hetero-structured α-MnO{sub 2} electrode is due to its high specific surface area and unique hierarchy architecture which facilitate fast electron and ion transport.

  10. Volume ignition of laser driven fusion pellets and double layer effects

    International Nuclear Information System (INIS)

    Cicchitelli, L.; Eliezer, S.; Goldsworthy, M.P.; Green, F.; Hora, H.; Ray, P.S.; Stening, R.J.; Szichman, H.

    1988-01-01

    The realization of an ideal volume compression of laser-irradiated fusion pellets opens the possibility for an alternative to spark ignition proposed for many years for inertial confinement fusion. A re-evaluation of the difficulties of the central spark ignition of laser driven pellets is given. The alternative volume compression theory, together with volume burn and volume ignition, have received less attention and are re-evaluated in view of the experimental verification generalized fusion gain formulas, and the variation of optimum temperatures derived at self-ignition. Reactor-level DT fusion with MJ-laser pulses and volume compression to 50 times the solid-state density are estimated. Dynamic electric fields and double layers at the surface and in the interior of plasmas result in new phenomena for the acceleration of thermal electrons to suprathermal electrons. Double layers also cause a surface tension which stabilizes against surface wave effects and Rayleigh-Taylor instabilities. (author)

  11. Stable Single-Mode Operation of Distributed Feedback Quantum Cascade Laser by Optimized Reflectivity Facet Coatings

    Science.gov (United States)

    Wang, Dong-Bo; Zhang, Jin-Chuan; Cheng, Feng-Min; Zhao, Yue; Zhuo, Ning; Zhai, Shen-Qiang; Wang, Li-Jun; Liu, Jun-Qi; Liu, Shu-Man; Liu, Feng-Qi; Wang, Zhan-Guo

    2018-02-01

    In this work, quantum cascade lasers (QCLs) based on strain compensation combined with two-phonon resonance design are presented. Distributed feedback (DFB) laser emitting at 4.76 μm was fabricated through a standard buried first-order grating and buried heterostructure (BH) processing. Stable single-mode emission is achieved under all injection currents and temperature conditions without any mode hop by the optimized antireflection (AR) coating on the front facet. The AR coating consists of a double layer dielectric of Al2O3 and Ge. For a 2-mm laser cavity, the maximum output power of the AR-coated DFB-QCL was more than 170 mW at 20 °C with a high wall-plug efficiency (WPE) of 4.7% in a continuous-wave (CW) mode.

  12. Optimization of Monocrystalline MgxCd1-xTe/MgyCd1-yTe Double-Heterostructure Solar Cells

    Science.gov (United States)

    Becker, Jacob J.

    Polycrystalline CdS/CdTe solar cells continue to dominate the thin-film photovoltaics industry with an achieved record efficiency of over 22% demonstrated by First Solar, yet monocrystalline CdTe devices have received considerably less attention over the years. Monocrystalline CdTe double-heterostructure solar cells show great promise with respect to addressing the problem of low Voc with the passing of the 1 V benchmark. Rapid progress has been made in driving the efficiency in these devices ever closer to the record presently held by polycrystalline thin-films. This achievement is primarily due to the utilization of a remote p-n heterojunction in which the heavily doped contact materials, which are so problematic in terms of increasing non-radiative recombination inside the absorber, are moved outside of the CdTe double heterostructure with two MgyCd1-yTe barrier layers to provide confinement and passivation at the CdTe surfaces. Using this design, the pursuit and demonstration of efficiencies beyond 20% in CdTe solar cells is reported through the study and optimization of the structure barriers, contacts layers, and optical design. Further development of a wider bandgap MgxCd1-xTe solar cell based on the same design is included with the intention of applying this knowledge to the development of a tandem solar cell constructed on a silicon subcell. The exploration of different hole-contact materials--ZnTe, CuZnS, and a-Si:H--and their optimization is presented throughout the work. Devices utilizing a-Si:H hole contacts exhibit open-circuit voltages of up to 1.11 V, a maximum total-area efficiency of 18.5% measured under AM1.5G, and an active-area efficiency of 20.3% for CdTe absorber based devices. The achievement of voltages beyond 1.1V while still maintaining relatively high fill factors with no rollover, either before or after open-circuit, is a promising indicator that this approach can result in devices surpassing the 22% record set by polycrystalline

  13. Miniature fiber-optic multiphoton microscopy system using frequency-doubled femtosecond Er-doped fiber laser.

    Science.gov (United States)

    Huang, Lin; Mills, Arthur K; Zhao, Yuan; Jones, David J; Tang, Shuo

    2016-05-01

    We report on a miniature fiber-optic multiphoton microscopy (MPM) system based on a frequency-doubled femtosecond Er-doped fiber laser. The femtosecond pulses from the laser source are delivered to the miniature fiber-optic probe at 1.58 µm wavelength, where a standard single mode fiber is used for delivery without the need of free-space dispersion compensation components. The beam is frequency-doubled inside the probe by a periodically poled MgO:LiNbO3 crystal. Frequency-doubled pulses at 786 nm with a maximum power of 80 mW and a pulsewidth of 150 fs are obtained and applied to excite intrinsic signals from tissues. A MEMS scanner, a miniature objective, and a multimode collection fiber are further used to make the probe compact. The miniature fiber-optic MPM system is highly portable and robust. Ex vivo multiphoton imaging of mammalian skins demonstrates the capability of the system in imaging biological tissues. The results show that the miniature fiber-optic MPM system using frequency-doubled femtosecond fiber laser can potentially bring the MPM imaging for clinical applications.

  14. On the problem of internal optical loss and current leakage in laser heterostructures based on AlGaInAs/InP solid solutions

    International Nuclear Information System (INIS)

    Veselov, D. A.; Shashkin, I. S.; Bakhvalov, K. V.; Lyutetskiy, A. V.; Pikhtin, N. A.; Rastegaeva, M. G.; Slipchenko, S. O.; Bechvay, E. A.; Strelets, V. A.; Shamakhov, V. V.; Tarasov, I. S.

    2016-01-01

    Semiconductor lasers based on MOCVD-grown AlGaInAs/InP separate-confinement heterostructures are studied. It is shown that raising only the energy-gap width of AlGaInAs-waveguides without the introduction of additional barriers results in more pronounced current leakage into the cladding layers. It is found that the introduction of additional barrier layers at the waveguide–cladding-layer interface blocks current leakage into the cladding layers, but results in an increase in the internal optical loss with increasing pump current. It is experimentally demonstrated that the introduction of blocking layers makes it possible to obtain maximum values of the internal quantum efficiency of stimulated emission (92%) and continuouswave output optical power (3.2 W) in semiconductor lasers in the eye-safe wavelength range (1400–1600 nm).

  15. On the problem of internal optical loss and current leakage in laser heterostructures based on AlGaInAs/InP solid solutions

    Energy Technology Data Exchange (ETDEWEB)

    Veselov, D. A., E-mail: dmitriy90@list.ru; Shashkin, I. S.; Bakhvalov, K. V.; Lyutetskiy, A. V.; Pikhtin, N. A.; Rastegaeva, M. G.; Slipchenko, S. O.; Bechvay, E. A.; Strelets, V. A.; Shamakhov, V. V.; Tarasov, I. S. [Russian Academy of Sciences, Ioffe Physical–Technical Institute (Russian Federation)

    2016-09-15

    Semiconductor lasers based on MOCVD-grown AlGaInAs/InP separate-confinement heterostructures are studied. It is shown that raising only the energy-gap width of AlGaInAs-waveguides without the introduction of additional barriers results in more pronounced current leakage into the cladding layers. It is found that the introduction of additional barrier layers at the waveguide–cladding-layer interface blocks current leakage into the cladding layers, but results in an increase in the internal optical loss with increasing pump current. It is experimentally demonstrated that the introduction of blocking layers makes it possible to obtain maximum values of the internal quantum efficiency of stimulated emission (92%) and continuouswave output optical power (3.2 W) in semiconductor lasers in the eye-safe wavelength range (1400–1600 nm).

  16. Laser performance and modeling of RE3+:YAG double-clad crystalline fiber waveguides

    Science.gov (United States)

    Li, Da; Lee, Huai-Chuan; Meissner, Stephanie K.; Meissner, Helmuth E.

    2018-02-01

    We report on laser performance of ceramic Yb:YAG and single crystal Tm:YAG double-clad crystalline fiber waveguide (CFW) lasers towards the goal of demonstrating the design and manufacturing strategy of scaling to high output power. The laser component is a double-clad CFW, with RE3+:YAG (RE = Yb, Tm respectively) core, un-doped YAG inner cladding, and ceramic spinel or sapphire outer cladding. Laser performance of the CFW has been demonstrated with 53.6% slope efficiency and 27.5-W stable output power at 1030-nm for Yb:YAG CFW, and 31.6% slope efficiency and 46.7-W stable output power at 2019-nm for Tm:YAG CFW, respectively. Adhesive-Free Bond (AFB®) technology enables a designable refractive index difference between core and inner cladding, and designable core and inner cladding sizes, which are essential for single transverse mode CFW propagation. To guide further development of CFW designs, we present thermal modeling, power scaling and design of single transverse mode operation of double-clad CFWs and redefine the single-mode operation criterion for the double-clad structure design. The power scaling modeling of double-clad CFW shows that in order to achieve the maximum possible output power limited by the physical properties, including diode brightness, thermal lens effect, and simulated Brillion scattering, the length of waveguide is in the range of 0.5 2 meters. The length of an individual CFW is limited by single crystal growth and doping uniformity to about 100 to 200 mm lengths, and also by availability of starting crystals and manufacturing complexity. To overcome the limitation of CFW lengths, end-to-end proximity-coupling of CFWs is introduced.

  17. Mathematical modeling of InGaAsP/InP diode laser

    International Nuclear Information System (INIS)

    Soukieh, M.; Hammadi, M.; Abdul Ghani, B.

    2009-01-01

    A mathematical model describing the dynamic emission of InGaAsP/InP semiconductor laser has been developed. This model considers the differential gain, gain at free running condition, spontaneous, bimolecular recombination, Auger and Shockley-Hall-Read (SHR) recombination processes and variation of the internal cavity losses. The model allows investigating the impact of the input laser parameters (injection current, internal cavity losses, Auger and SHR recombination coefficients and spontaneous coupling factor) on the output semiconductor double heterostructure laser pulse characteristics. The numerical calculations show that, the output photon density, pulse width, delay time and the pulse duration are affected by variation the values of the injected current, Auger recombination coefficient, spontaneous coupling factors and by the internal cavity losses. The temporal behavior of the internal cavity losses is also estimated. The calculated results are in very good agreement with the experimental results reported in the literature. (author)

  18. Design of a solar-pumped frequency-doubled 532 nm Nd:YVO4 laser

    Science.gov (United States)

    Kittiboonanan, P.; Putchana, W.; Deeudomand, M.; Ratanavis, A.

    2017-09-01

    During the last year we have made progresson a development of a frequency-doubled 532 nm Nd:YVO4 laser pumped by solar light. The research aimed to demonstrate solar pumped lasers consisting of the optically contracted Nd:YVO4 crystal and KTP crystal with a system of laser mirrors deposited onto crystal sides. The Cassegrain reflector is used as the configuration. This solar pumped laser system is appealing for a variety applications including laser communication, imaging and defense applications.

  19. Magnetotransport investigations of single- and heterostructure epitaxial films of IV/VI-semiconductors

    International Nuclear Information System (INIS)

    Ambrosch, K.-E.

    1985-01-01

    Lead salts are small gap semiconductors that are used for infrared detectors and lasers. PbMnTe and PbEuTe are semimagnetic semiconductors. Magnetotransport properties of epitaxial films and epitaxial heterostructures (PbTe / PbSnTe) are investigated. Epitaxial films of PbSnTe, PbMnTe and PbEuTe have been used for Shubnikov de Haas - experiments in tilted magnetic fields. This method allows the quantitative determination of the electric carrier distribution with respect to the crystal directions. The nonequal distribution is caused by strain effects that are more important for PbMnTe than for PbSnTe and PbEuTe. Magnetoresistance experiments show a deviation from cubic symmetry that leads to the same results for the carrier distribution as the Shubnikov de Haas effect. Magnetoresistance experiments performed with PbTe / PbSnTe heterostructures show no megnetoresistance if the magnetic field is in plane with the layers. The difference of the magnetoresistance for single films and heterostructures is explained by 'quasitwodimensional' carriers. Shubnikov de Haas experiments performed on heterostructures as a function of the tilt angle of the magnetic field show different behaviour compared to that of single films. Using additional information about effective masses and strain it was possible to distinguish between 'two-' and 'threedimensional' electronic systems. The distribution of carriers in single films and heterostructures has been determined by means of magnetotransport experiments. The results are explained by strain effects of the crystal lattice. In addition heterostructures show a 'quasitwodimensional' behaviour caused by interaction of their layers. (Author)

  20. Conical Double Frequency Emission by Femtosecond Laser Pulses from DKDP

    International Nuclear Information System (INIS)

    Xi-Peng, Zhang; Hong-Bing, Jiang; Shan-Chun, Tang; Qi-Huang, Gong

    2009-01-01

    Conical double frequency emission is investigated by femtosecond laser pulses at a wavelength of 800 nm in a DKDP crystal. It is demonstrated that the sum frequency of incident wave and its scattering wave accounts for the conical double frequency emission. The gaps on the conical rings are observed and they are very sensitive to the propagation direction, and thus could be used to detect the small angle deviation of surface direction. (fundamental areas of phenomenology (including applications))

  1. Radio frequency regenerative oscillations in monolithic high-Q/V heterostructured photonic crystal cavities

    International Nuclear Information System (INIS)

    Yang, Jinghui; Gu, Tingyi; Zheng, Jiangjun; Wei Wong, Chee; Yu, Mingbin; Lo, Guo-Qiang; Kwong, Dim-Lee

    2014-01-01

    We report temporal and spectral domain observation of regenerative oscillation in monolithic silicon heterostructured photonic crystals cavities with high quality factor to mode volume ratios (Q/V). The results are interpreted by nonlinear coupled mode theory (CMT) tracking the dynamics of photon, free carrier population, and temperature variations. We experimentally demonstrate effective tuning of the radio frequency tones by laser-cavity detuning and laser power levels, confirmed by the CMT simulations with sensitive input parameters

  2. Near-infrared lasers and self-frequency-doubling in Nd:YCOB cladding waveguides.

    Science.gov (United States)

    Ren, Yingying; Chen, Feng; Vázquez de Aldana, Javier R

    2013-05-06

    A design of cladding waveguides in Nd:YCOB nonlinear crystals is demonstrated in this work. Compact Fabry-Perot oscillation cavities are employed for waveguide laser generation at 1062 nm and self-frequency-doubling at 531 nm, under optical pump at 810 nm. The waveguide laser shows slope efficiency as high as 55% at 1062 nm. The SFD green waveguide laser emits at 531 nm with a maximum power of 100 μW.

  3. Green frequency-doubled laser-beam propagation in high-temperature hohlraum plasmas.

    Science.gov (United States)

    Niemann, C; Berger, R L; Divol, L; Froula, D H; Jones, O; Kirkwood, R K; Meezan, N; Moody, J D; Ross, J; Sorce, C; Suter, L J; Glenzer, S H

    2008-02-01

    We demonstrate propagation and small backscatter losses of a frequency-doubled (2omega) laser beam interacting with inertial confinement fusion hohlraum plasmas. The electron temperature of 3.3 keV, approximately a factor of 2 higher than achieved in previous experiments with open geometry targets, approaches plasma conditions of high-fusion yield hohlraums. In this new temperature regime, we measure 2omega laser-beam transmission approaching 80% with simultaneous backscattering losses of less than 10%. These findings suggest that good laser coupling into fusion hohlraums using 2omega light is possible.

  4. Electric field effects in graphene/LaAlO3/SrTiO3 heterostructures and nanostructures

    Directory of Open Access Journals (Sweden)

    Mengchen Huang

    2015-06-01

    Full Text Available We report the development and characterization of graphene/LaAlO3/SrTiO3 heterostructures. Complex-oxide heterostructures are created by pulsed laser deposition and are integrated with graphene using both mechanical exfoliation and transfer from chemical-vapor deposition on ultraflat copper substrates. Nanoscale control of the metal-insulator transition at the LaAlO3/SrTiO3 interface, achieved using conductive atomic force microscope lithography, is demonstrated to be possible through the graphene layer. LaAlO3/SrTiO3-based electric field effects using a graphene top gate are also demonstrated. The ability to create functional field-effect devices provides the potential of graphene-complex-oxide heterostructures for scientific and technological advancement.

  5. Double-shell target designs for the Los Alamos Scientific Laboratory eight-beam laser system

    International Nuclear Information System (INIS)

    Kindel, J.M.; Stroscio, M.A.

    1978-03-01

    We investigate two double-pusher laser fusion targets, one that incorporates an outer exploding pusher shell and another that uses velocity multiplication. Specific designs are presented for the Los Alamos Scientific Laboratory Eight-Beam Laser System

  6. Q-switching and mode-locking in a diode-pumped frequency-doubled Nd : YAG laser

    International Nuclear Information System (INIS)

    Donin, Valerii I; Yakovin, Dmitrii V; Gribanov, A V

    2012-01-01

    A new method for obtaining Q-switching simultaneously with mode-locking using one travelling-wave acousto-optic modulator in a frequency-doubled Nd : YAG laser cavity is described. Further shortening of output laser pulses (from 40 to 3.25 ps) is achieved by forming a Kerr lens in the frequency-doubling crystal. At an average power of ∼ 2 W and a Q-switching rate of 2 kHz, the peak power of the stably operating reached ∼ 50 MW.

  7. Efficient 525 nm laser generation in single or double resonant cavity

    Science.gov (United States)

    Liu, Shilong; Han, Zhenhai; Liu, Shikai; Li, Yinhai; Zhou, Zhiyuan; Shi, Baosen

    2018-03-01

    This paper reports the results of a study into highly efficient sum frequency generation from 792 and 1556 nm wavelength light to 525 nm wavelength light using either a single or double resonant ring cavity based on a periodically poled potassium titanyl phosphate crystal (PPKTP). By optimizing the cavity's parameters, the maximum power achieved for the resultant 525 nm laser was 263 and 373 mW for the single and double resonant cavity, respectively. The corresponding quantum conversion efficiencies were 8 and 77% for converting 1556 nm photons to 525 nm photons with the single and double resonant cavity, respectively. The measured intra-cavity single pass conversion efficiency for both configurations was about 5%. The performances of the sum frequency generation in these two configurations was studied and compared in detail. This work will provide guidelines for optimizing the generation of sum frequency generated laser light for a variety of configurations. The high conversion efficiency achieved in this work will help pave the way for frequency up-conversion of non-classical quantum states, such as the squeezed vacuum and single photon states. The proposed green laser source will be used in our future experiments, which includes a plan to generate two-color entangled photon pairs and achieve the frequency down-conversion of single photons carrying orbital angular momentum.

  8. Frequency-doubled DBR-tapered diode laser for direct pumping of Ti:sapphire lasers generating sub-20 fs pulses

    DEFF Research Database (Denmark)

    Müller, André; Jensen, Ole Bjarlin; Unterhuber, Angelika

    2011-01-01

    For the first time a single-pass frequency doubled DBR-tapered diode laser suitable for pumping Ti:sapphire lasers generating ultrashort pulses is demonstrated. The maximum output powers achieved when pumping the Ti:sapphire laser are 110 mW (CW) and 82 mW (mode-locked) respectively at 1.2 W...... of pump power. This corresponds to a reduction in optical conversion efficiencies to 75% of the values achieved with a commercial diode pumped solid-state laser. However, the superior electro-optical efficiency of the diode laser improves the overall efficiency of the Ti:sapphire laser by a factor > 2....... The optical spectrum emitted by the Ti:sapphire laser when pumped with our diode laser shows a spectral width of 112 nm (FWHM). Based on autocorrelation measurements, pulse widths of less than 20 fs can therefore be expected....

  9. Frequency-doubled DBR-tapered diode laser for direct pumping of Ti:sapphire lasers generating sub-20 fs pulses.

    Science.gov (United States)

    Müller, André; Jensen, Ole Bjarlin; Unterhuber, Angelika; Le, Tuan; Stingl, Andreas; Hasler, Karl-Heinz; Sumpf, Bernd; Erbert, Götz; Andersen, Peter E; Petersen, Paul Michael

    2011-06-20

    For the first time a single-pass frequency doubled DBR-tapered diode laser suitable for pumping Ti:sapphire lasers generating ultrashort pulses is demonstrated. The maximum output powers achieved when pumping the Ti:sapphire laser are 110 mW (CW) and 82 mW (mode-locked) respectively at 1.2 W of pump power. This corresponds to a reduction in optical conversion efficiencies to 75% of the values achieved with a commercial diode pumped solid-state laser. However, the superior electro-optical efficiency of the diode laser improves the overall efficiency of the Ti:sapphire laser by a factor > 2. The optical spectrum emitted by the Ti:sapphire laser when pumped with our diode laser shows a spectral width of 112 nm (FWHM). Based on autocorrelation measurements, pulse widths of less than 20 fs can therefore be expected.

  10. Application of double-layered skin phantoms for optical flow imaging during laser tattoo treatments

    Science.gov (United States)

    Lee, Byeong-il; Song, Woosub; Kim, Hyejin; Kang, Hyun Wook

    2016-05-01

    The feasible application of double-layered skin phantoms was evaluated to identify artificial blood flow with a Doppler optical coherence tomography (DOCT) system for laser tattoo treatments. Polydimethylsiloxane (PDMS) was used to fabricate the artificial phantoms with flow channels embedded. A double-integrating sphere system with an inverse adding-doubling method quantified both the absorption and the reduced scattering coefficients for epidermis and dermis phantoms. Both OCT and caliper measurements confirmed the double-layered phantom structure (epidermis = 136 ± 17 µm vs. dermis = 3.0 ± 0.1 mm). The DOCT method demonstrated that high flow rates were associated with high image contrast, visualizing the position and the shape of the flow channel. Application of the channel-embedded skin phantoms in conjunction with DOCT can be a reliable technique to assess dynamic variations in the blood flow during and after laser tattoo treatments.

  11. A comparative study of the laser induce breakdown spectroscopy in single- and double-pulse laser geometry

    International Nuclear Information System (INIS)

    Sun Duixiong; Su Maogen; Dong Chenzhong; Wen Guanhong; Cao Xiangnian

    2013-01-01

    A time resolved laser induced breakdown spectroscopy technique (LIBS) was used for the investigation of emission signal enhancement on double-pulse LIBS. Two Q-switched Nd:YAG lasers at 1064 nm wavelength have been employed to generate laser-induced plasma on aluminium-based alloys. The plasma emission signals were recorded by spectrometer with ICCD detector. Spectral response calibration was performed by using deuterium and tungsten halogen lamps. Time evolution of the plasma temperature and electron density was investigated in SP and DP experiments. Based on the investigation of plasma parameters, the enhancements of emission line intensities were investigated, and the mechanisms of it were discussed. (author)

  12. Tunable KTA Stokes laser based on stimulated polariton scattering and its intracavity frequency doubling.

    Science.gov (United States)

    Zang, Jie; Cong, Zhenhua; Chen, Xiaohan; Zhang, Xingyu; Qin, Zengguang; Liu, Zhaojun; Lu, Jianren; Wu, Dong; Fu, Qiang; Jiang, Shiqi; Zhang, Shaojun

    2016-04-04

    This paper presents the tunable Stokes laser characteristics of KTiOAsO4 (KTA) crystal based on stimulated polariton scattering (SPS). When the pumping laser wavelength is 1064.2 nm, the KTA Stokes wave can be discontinuously tuned from 1077.9 to 1088.4 nm with four gaps from 1079.0 to 1080.1 nm, from 1080.8 to 1082.8 nm, from 1083.6 to 1085.5 nm, and from 1085.8 to 1086.8 nm. When a frequency doubling crystal LiB3O5 (LBO) is inserted into the Stokes laser cavity, the frequency-doubled wave can be discontinuously tuned from 539.0 to 539.5 nm, from 540.1 to 540.4 nm, from 541.3 to 541.8 nm, from 542.7 to 542.9 nm and from 543.4 to 544.2 nm. With a pumping pulse energy of 130.0 mJ and an output coupler reflectivity of about 30%, the obtained maximum Stokes laser pulse energy at 1078.6 nm is 33.9 mJ and the obtained maximum frequency-doubled laser pulse energy at 543.8 nm is 15.7 mJ. By using the most probably coupled transverse optical modes obtained from the literature, the polariton refractive indexes, and the simplified polariton Sellmeier equations, the polariton dispersion curve is obtained. The formation of the Stokes frequency gaps is explained.

  13. Effectiveness evaluation of double-layered satellite network with laser and microwave hybrid links based on fuzzy analytic hierarchy process

    Science.gov (United States)

    Zhang, Wei; Rao, Qiaomeng

    2018-01-01

    In order to solve the problem of high speed, large capacity and limited spectrum resources of satellite communication network, a double-layered satellite network with global seamless coverage based on laser and microwave hybrid links is proposed in this paper. By analyzing the characteristics of the double-layered satellite network with laser and microwave hybrid links, an effectiveness evaluation index system for the network is established. And then, the fuzzy analytic hierarchy process, which combines the analytic hierarchy process and the fuzzy comprehensive evaluation theory, is used to evaluate the effectiveness of the double-layered satellite network with laser and microwave hybrid links. Furthermore, the evaluation result of the proposed hybrid link network is obtained by simulation. The effectiveness evaluation process of the proposed double-layered satellite network with laser and microwave hybrid links can help to optimize the design of hybrid link double-layered satellite network and improve the operating efficiency of the satellite system.

  14. ULTRAVIOLET TRANSITIONS IN EUROPIUM STUDIED WITH A FREQUENCY-DOUBLED CW RING DYE-LASER

    NARCIS (Netherlands)

    Eliel, E.R.; Hogervorst, W.; van Leeuwen, K.A.H.; Post, B.H.

    1981-01-01

    High resolution laser spectroscopy has been applied to the study of three ultraviolet transitions in Europium at λ = 294.8, 295.1 and 295.8 nm. The tunable narrowband UV has been generated by intracavity frequency doubling in a cw ring dye laser using a temperate tuned, Brewster angled ADA crystal.

  15. Intracavity doubling of CW Ti:sapphire laser to 392.5 nm using BiBO-crystal

    DEFF Research Database (Denmark)

    Mortensen, Jesper Liltorp; Thorhauge, Morten; Tidemand-Lichtenberg, Peter

    2005-01-01

    In this work we present results obtained for intra-cavity frequency-doubling of a 785 nm CW Ti:sapphire laser utilising BiBO as the non-linear crystal. Intracavity doubling offers several advantages compared to extra-cavity doubling, such as no need to couple to an external resonance cavity...

  16. Double-sided electron-beam generator for KrF laser excitation

    International Nuclear Information System (INIS)

    Schlitt, L.; Swingle, J.

    1980-05-01

    Several laser systems excited by electron beam have been identified as candidates for pump sources for laser fusion applications. The electron beam generators required must be compact, reliable and capable of synchronization with other system components. A KrF laser producing a minimum output of 25 J was needed for the RAPIER (Raman Amplifier Pumped by Intensified Excimer Radiation) system. A double-sided electron beam system was designed and constructed specifically for this purpose and has produced > 35 J of KrF output. Each of the two electron beam machines in the system operates with an rms jitter of 0.4 ns and together occupy approx. 3.5 m 2 of floor space. The successful operation of this laser has engendered requests for a description of the engineering details of this system. This document contains a brief description of the design issues and a full set of engineering drawings for this KrF laser amplifier

  17. Correlated Keldysh-Faisal-Reiss theory of above-threshold double ionization of He in intense laser fields

    International Nuclear Information System (INIS)

    Becker, A.; Faisal, F.H.M.

    1994-01-01

    We have developed a correlated Keldysh-Faisal-Reiss theory of laser-induced double ionization of a two-electron atom. The basic N-photon T matrix and the expression for N-photon triple-differential rates or cross sections (TDCS's) are derived. The theory is applied to investigate the TDCS's for very-high-order multiphoton double ionization of He with lasers of wavelength λ=248 nm and λ=617 nm. Comparison with the uncorrelated results reveals a dramatic influence of the final-state e-e correlation on the above-threshold TDCS's to be measured in coincidence experiments in intense laser fields. The limiting case of the TDCS's for weak-field double ionization of He by a synchrotron photon is also investigated; the results confirm the earlier theoretical findings and recent experimental results in that case

  18. Stimulated emission in heterostructures with double InGaAs/GaAsSb/GaAs quantum wells, grown on GaAs and Ge/Si(001) substrates

    Energy Technology Data Exchange (ETDEWEB)

    Yablonsky, A. N., E-mail: yablonsk@ipm.sci-nnov.ru; Morozov, S. V.; Gaponova, D. M.; Aleshkin, V. Ya. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation); Shengurov, V. G.; Zvonkov, B. N.; Vikhrova, O. V.; Baidus’, N. V. [Lobachevsky State University of Nizhny Novgorod (Russian Federation); Krasil’nik, Z. F. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation)

    2016-11-15

    We report the observation of stimulated emission in heterostructures with double InGaAs/GaAsSb/GaAs quantum wells, grown on Si(001) substrates with the application of a relaxed Ge buffer layer. Stimulated emission is observed at 77 K under pulsed optical pumping at a wavelength of 1.11 μm, i.e., in the transparency range of bulk silicon. In similar InGaAs/GaAsSb/GaAs structures grown on GaAs substrates, room-temperature stimulated emission is observed at 1.17 μm. The results obtained are promising for integration of the structures into silicon-based optoelectronics.

  19. Doping concentration effect on performance of single QW double-heterostructure InGaN/AlGaN light emitting diode

    Science.gov (United States)

    Halim, N. Syafira Abdul; Wahid, M. Halim A.; Hambali, N. Azura M. Ahmad; Rashid, Shanise; Shahimin, Mukhzeer M.

    2017-11-01

    Light emitting diode (LED) employed a numerous applications such as displaying information, communication, sensing, illumination and lighting. In this paper, InGaN/AlGaN based on one quantum well (1QW) light emitting diode (LED) is modeled and studied numerically by using COMSOL Multiphysics 5.1 version. We have selected In0.06Ga0.94N as the active layer with thickness 50nm sandwiched between 0.15μm thick layers of p and n-type Al0.15Ga0.85N of cladding layers. We investigated an effect of doping concentration on InGaN/AlGaN double heterostructure of light-emitting diode (LED). Thus, energy levels, carrier concentration, electron concentration and forward voltage (IV) are extracted from the simulation results. As the doping concentration is increasing, the performance of threshold voltage, Vth on one quantum well (1QW) is also increases from 2.8V to 3.1V.

  20. Doping concentration effect on performance of single QW double-heterostructure InGaN/AlGaN light emitting diode

    Directory of Open Access Journals (Sweden)

    Abdul Halim N. Syafira

    2017-01-01

    Full Text Available Light emitting diode (LED employed a numerous applications such as displaying information, communication, sensing, illumination and lighting. In this paper, InGaN/AlGaN based on one quantum well (1QW light emitting diode (LED is modeled and studied numerically by using COMSOL Multiphysics 5.1 version. We have selected In0.06Ga0.94N as the active layer with thickness 50nm sandwiched between 0.15μm thick layers of p and n-type Al0.15Ga0.85N of cladding layers. We investigated an effect of doping concentration on InGaN/AlGaN double heterostructure of light-emitting diode (LED. Thus, energy levels, carrier concentration, electron concentration and forward voltage (IV are extracted from the simulation results. As the doping concentration is increasing, the performance of threshold voltage, Vth on one quantum well (1QW is also increases from 2.8V to 3.1V.

  1. Isotopically selective RIMS of rare radionuclides by double-resonance excitation with cw lasers

    International Nuclear Information System (INIS)

    Bushaw, B.A.; Munley, J.T.

    1990-09-01

    Double-resonance, Resonance Ionization Mass Spectroscopy (RIMS) using two single-frequency dye lasers and a CO 2 laser for photoionization has been shown to be both extremely sensitive and highly selective. Measurements on the radioisotope 210 Pb have demonstrated optical selectivity in excess of 10 9 and detection limits of less than 1 femtogram

  2. Laser tissue coagulation and concurrent optical coherence tomography through a double-clad fiber coupler

    Science.gov (United States)

    Beaudette, Kathy; Baac, Hyoung Won; Madore, Wendy-Julie; Villiger, Martin; Godbout, Nicolas; Bouma, Brett E.; Boudoux, Caroline

    2015-01-01

    Double-clad fiber (DCF) is herein used in conjunction with a double-clad fiber coupler (DCFC) to enable simultaneous and co-registered optical coherence tomography (OCT) and laser tissue coagulation. The DCF allows a single channel fiber-optic probe to be shared: i.e. the core propagating the OCT signal while the inner cladding delivers the coagulation laser light. We herein present a novel DCFC designed and built to combine both signals within a DCF (>90% of single-mode transmission; >65% multimode coupling). Potential OCT imaging degradation mechanisms are also investigated and solutions to mitigate them are presented. The combined DCFC-based system was used to induce coagulation of an ex vivo swine esophagus allowing a real-time assessment of thermal dynamic processes. We therefore demonstrate a DCFC-based system combining OCT imaging with laser coagulation through a single fiber, thus enabling both modalities to be performed simultaneously and in a co-registered manner. Such a system enables endoscopic image-guided laser marking of superficial epithelial tissues or laser thermal therapy of epithelial lesions in pathologies such as Barrett’s esophagus. PMID:25909013

  3. Comparison of fiber lasers based on distributed side-coupled cladding-pumped fibers and double-cladding fibers.

    Science.gov (United States)

    Huang, Zhihe; Cao, Jianqiu; Guo, Shaofeng; Chen, Jinbao; Xu, Xiaojun

    2014-04-01

    We compare both analytically and numerically the distributed side-coupled cladding-pumped (DSCCP) fiber lasers and double cladding fiber (DCF) lasers. We show that, through optimization of the coupling and absorbing coefficients, the optical-to-optical efficiency of DSCCP fiber lasers can be made as high as that of DCF lasers. At the same time, DSCCP fiber lasers are better than the DCF lasers in terms of thermal management.

  4. Double threshold behavior in a resonance-controlled ZnO random laser

    Directory of Open Access Journals (Sweden)

    Ryo Niyuki

    2017-03-01

    Full Text Available We observed unusual lasing characteristics, such as double thresholds and blue-shift of lasing peak, in a resonance-controlled ZnO random laser. From the analysis of lasing threshold carrier density, we found that the lasing at 1st and 2nd thresholds possibly arises from different mechanisms; the lasing at 1st threshold involves exciton recombination, whereas the lasing at 2nd threshold is caused by electron-hole plasma recombination, which is the typical origin of conventional random lasers. These phenomena are very similar to the transition from polariton lasing to photon lasing observed in a well-defined cavity laser.

  5. Tunable multichannel filter in photonic crystal heterostructure containing permeability-negative materials

    International Nuclear Information System (INIS)

    Hu Xiaoyong; Liu Zheng; Gong Qihuang

    2008-01-01

    A tunable multichannel filter is demonstrated theoretically based on a one-dimensional photonic crystal heterostructure containing permeability-negative material. The filtering properties of the photonic crystal filter, including the channel number and frequency, can be tuned by adjusting the structure parameters or by a pump laser. The angular response of the photonic crystal filter and the influences of the losses on the filtering properties are also analyzed

  6. Tunable multichannel filter in photonic crystal heterostructure containing permeability-negative materials

    Energy Technology Data Exchange (ETDEWEB)

    Hu Xiaoyong [State Key Laboratory for Mesoscopic Physics, Department of Physics, Peking University, Beijing 100871 (China)], E-mail: xiaoyonghu@pku.edu.cn; Liu Zheng [State Key Laboratory for Mesoscopic Physics, Department of Physics, Peking University, Beijing 100871 (China); Gong Qihuang [State Key Laboratory for Mesoscopic Physics, Department of Physics, Peking University, Beijing 100871 (China)], E-mail: qhgong@pku.edu.cn

    2008-01-14

    A tunable multichannel filter is demonstrated theoretically based on a one-dimensional photonic crystal heterostructure containing permeability-negative material. The filtering properties of the photonic crystal filter, including the channel number and frequency, can be tuned by adjusting the structure parameters or by a pump laser. The angular response of the photonic crystal filter and the influences of the losses on the filtering properties are also analyzed.

  7. Theoretical modeling of the dynamics of a semiconductor laser subject to double-reflector optical feedback

    Energy Technology Data Exchange (ETDEWEB)

    Bakry, A. [King Abdulaziz University, 80203, Department of Physics, Faculty of Science (Saudi Arabia); Abdulrhmann, S. [Jazan University, 114, Department of Physics, Faculty of Sciences (Saudi Arabia); Ahmed, M., E-mail: mostafa.farghal@mu.edu.eg [King Abdulaziz University, 80203, Department of Physics, Faculty of Science (Saudi Arabia)

    2016-06-15

    We theoretically model the dynamics of semiconductor lasers subject to the double-reflector feedback. The proposed model is a new modification of the time-delay rate equations of semiconductor lasers under the optical feedback to account for this type of the double-reflector feedback. We examine the influence of adding the second reflector to dynamical states induced by the single-reflector feedback: periodic oscillations, period doubling, and chaos. Regimes of both short and long external cavities are considered. The present analyses are done using the bifurcation diagram, temporal trajectory, phase portrait, and fast Fourier transform of the laser intensity. We show that adding the second reflector attracts the periodic and perioddoubling oscillations, and chaos induced by the first reflector to a route-to-continuous-wave operation. During this operation, the periodic-oscillation frequency increases with strengthening the optical feedback. We show that the chaos induced by the double-reflector feedback is more irregular than that induced by the single-reflector feedback. The power spectrum of this chaos state does not reflect information on the geometry of the optical system, which then has potential for use in chaotic (secure) optical data encryption.

  8. Production and characterization of femtosecond laser-written double line waveguides in heavy metal oxide glasses

    Science.gov (United States)

    da Silva, Diego Silvério; Wetter, Niklaus Ursus; de Rossi, Wagner; Kassab, Luciana Reyes Pires; Samad, Ricardo Elgul

    2018-01-01

    We report the fabrication and characterization of double line waveguides directly written in tellurite and germanate glasses using a femtosecond laser delivering 30 μJ, 80 fs pulses at 4 kHz repetition rate. The double line waveguides produced presented internal losses inferior to 2.0 dB/cm. The output mode profile and the M2 measurements indicate multimodal guiding behavior. A better beam quality for the GeO2 - PbO waveguide was observed when compared with TeO2 - ZnO glass. Raman spectroscopy of the waveguides showed structural modification of the glassy network and indicates that a negative refractive index modification occurs at the focus of the laser beam, therefore allowing for light guiding in between two closely spaced laser written lines. The refractive index change at 632 nm is around 10-4, and the structural changes in the laser focal region of the writing, evaluated by Raman spectroscopy, corroborated our findings that these materials are potential candidates for optical waveguides and passive components. To the best of our knowledge, the two double line configuration demonstrated in the present work was not reported before for germanate or tellurite glasses.

  9. Transition-metal dichalcogenides heterostructure saturable absorbers for ultrafast photonics.

    Science.gov (United States)

    Chen, Hao; Yin, Jinde; Yang, Jingwei; Zhang, Xuejun; Liu, Mengli; Jiang, Zike; Wang, Jinzhang; Sun, Zhipei; Guo, Tuan; Liu, Wenjun; Yan, Peiguang

    2017-11-01

    In this Letter, high-quality WS 2 film and MoS 2 film were vertically stacked on the tip of a single-mode fiber in turns to form heterostructure (WS 2 -MoS 2 -WS 2 )-based saturable absorbers with all-fiber integrated features. Their nonlinear saturable absorption properties were remarkable, such as a large modulation depth (∼16.99%) and a small saturable intensity (6.23  MW·cm -2 ). Stable pulses at 1.55 μm with duration as short as 296 fs and average power as high as 25 mW were obtained in an erbium-doped fiber laser system. The results demonstrate that the proposed heterostructures own remarkable nonlinear optical properties and offer a platform for adjusting nonlinear optical properties by stacking different transition-metal dichalcogenides or modifying the thickness of each layer, paving the way for engineering functional ultrafast photonics devices with desirable properties.

  10. Thermal Dynamics of Xanthene Dye in Polymer Matrix Excited by Double Pulse Laser Radiation

    Science.gov (United States)

    Samusev, Ilia; Borkunov, Rodion; Tsarkov, Maksim; Konstantinova, Elizaveta; Antipov, Yury; Demin, Maksim; Bryukhanov, Valery

    2018-01-01

    Double-pulse laser excitation of the eosin and silver nanoparticles embedded into polymer media is known to be a method of electronic-vibrational energy deactivation kinetic process information obtaining and polymer thermal dynamics investigation. We have studied the vibrational relaxation processes in dye molecules (eosin) and nanoparticles in polyvinyl alcohol after two time-shifted laser pulses with fast and delayed fluorescence kinetics study. In order to simulate thermal and photophysical processes caused by double photon excitation, we solved heat transfer and energy deactivation differential equations numerically. The simulation allowed us to obtain the value of heat conductivity coefficient of polymer matrix.

  11. Optically pumped quantum-dot Cd(Zn)Se/ZnSe laser and microchip converter for yellow-green spectral region

    Energy Technology Data Exchange (ETDEWEB)

    Lutsenko, E V; Voinilovich, A G; Rzheutskii, N V; Pavlovskii, V N; Yablonskii, G P; Sorokin, S V; Gronin, S V; Sedova, I V; Kop' ev, Petr S; Ivanov, Sergei V; Alanzi, M; Hamidalddin, A; Alyamani, A

    2013-05-31

    The room temperature laser generation in the yellow-green ({lambda} = 558.5-566.7 nm) spectral range has been demonstrated under optical pumping by a pulsed nitrogen laser of Cd(Zn)Se/ZnSe quantum dot heterostructures. The maximum achieved laser wavelength was as high as {lambda} = 566.7 nm at a laser cavity length of 945 {mu}m. High values of both the output pulsed power (up to 50 W) and the external differential quantum efficiency ({approx}60%) were obtained at a cavity length of 435 {mu}m. Both a high quality of the laser heterostructure and a low lasing threshold ({approx}2 kW cm{sup -2}) make it possible to use a pulsed InGaN laser diode as a pump source. A laser microchip converter based on this heterostructure has demonstrated a maximum output pulse power of {approx}90 mW at {lambda} = 560 nm. The microchip converter was placed in a standard TO-18 (5.6 mm in diameter) laser diode package. (semiconductor lasers. physics and technology)

  12. Generation of continuous-wave single-frequency 1.5 W 378 nm radiation by frequency doubling of a Ti:sapphire laser.

    Science.gov (United States)

    Cha, Yong-Ho; Ko, Kwang-Hoon; Lim, Gwon; Han, Jae-Min; Park, Hyun-Min; Kim, Taek-Soo; Jeong, Do-Young

    2010-03-20

    We have generated continuous-wave single-frequency 1.5 W 378 nm radiation by frequency doubling a high-power Ti:sapphire laser in an external enhancement cavity. An LBO crystal that is Brewster-cut and antireflection coated on both ends is used for a long-term stable frequency doubling. By optimizing the input coupler's reflectivity, we could generate 1.5 W 378 nm radiation from a 5 W 756 nm Ti:sapphire laser. According to our knowledge, this is the highest CW frequency-doubled power of a Ti:sapphire laser.

  13. Freedom from band-gap slavery: from diode lasers to quantum cascade lasers

    Science.gov (United States)

    Capasso, Federico

    2010-02-01

    Semiconductor heterostructure lasers, for which Alferov and Kromer received part of the Nobel Prize in Physics in 2000, are the workhorse of technologies such as optical communications, optical recording, supermarket scanners, laser printers and fax machines. They exhibit high performance in the visible and near infrared and rely for their operation on electrons and holes emitting photons across the semiconductor bandgap. This mechanism turns into a curse at longer wavelengths (mid-infrared) because as the bandgap, shrinks laser operation becomes much more sensitive to temperature, material defects and processing. Quantum Cascade Laser (QCL), invented in 1994, rely on a radically different process for light emission. QCLs are unipolar devices in which electrons undergo transitions between quantum well energy levels and are recycled through many stages emitting a cascade of photons. Thus by suitable tailoring of the layers' thickness, using the same heterostructure material, they can lase across the molecular fingerprint region from 3 to 25 microns and beyond into the far-infrared and submillimiter wave spectrum. High power cw room temperature QCLs and QCLs with large continuous single mode tuning range have found many applications (infrared countermeasures, spectroscopy, trace gas analysis and atmospheric chemistry) and are commercially available. )

  14. Electronic structure and STM images simulation of defects on hBN/ black-phosphorene heterostructures: A theoretical study

    Science.gov (United States)

    Ospina, D. A.; Cisternas, E.; Duque, C. A.; Correa, J. D.

    2018-03-01

    By first principles calculations which include van der Waals interactions, we studied the electronic structure of hexagonal boron-nitride/black-phosphorene heterostructures (hBN/BP). In particular the role of several kind of defects on the electronic properties of black-phosphorene monolayer and hBN/BP heterostructure was analyzed. The defects under consideration were single and double vacancies, as well Stone-Wale type defects, all of them present in the phosphorene layer. In this way, we found that the electronic structure of the hBN/BP is modified according the type of defect that is introduced. As a remarkable feature, our results show occupied states at the Fermi Level introduced by a single vacancy in the energy gap of the hBN/BP heterostructure. Additionally, we performed simulations of scanning tunneling microscopy images. These simulations show that is possible to discriminate the kind of defect even when the black-phosphorene monolayer is part of the heterostructure hBN/BP. Our results may help to discriminate among several kind of defects during experimental characterization of these novel materials.

  15. Electronic properties of semiconductor heterostructures

    International Nuclear Information System (INIS)

    Einevoll, G.T.

    1991-02-01

    Ten papers on the electronic properties of semiconductors and semiconductor heterostructures constitute the backbone of this thesis. Four papers address the form and validity of the single-band effective mass approximation for semiconductor heterostructures. In four other papers properties of acceptor states in bulk semiconductors and semiconductor heterostructures are studied using the novel effective bond-orbital model. The last two papers deal with localized excitions. 122 refs

  16. Thermal properties of high-power diode lasers investigated by means of high resolution thermography

    International Nuclear Information System (INIS)

    Kozłowska, Anna; Maląg, Andrzej; Dąbrowska, Elżbieta; Teodorczyk, Marian

    2012-01-01

    In the present work, thermal effects in high-power diode lasers are investigated by means of high resolution thermography. Thermal properties of the devices emitting in the 650 nm and 808 nm wavelength ranges are compared. The different versions of the heterostructure design are analyzed. The results show a lowering of active region temperature for diode lasers with asymmetric heterostructure scheme with reduced quantum well distance from the heterostructure surface (and the heat sink). Optimization of technological processes allowed for the improvement of the device performance, e.g. reduction of solder non-uniformities and local defect sites at the mirrors which was visualized by the thermography.

  17. Optical and mode-locking properties of InGaN/GaN based hetero-structures

    International Nuclear Information System (INIS)

    Irshad, A.

    2011-01-01

    Short wavelength pulsed lasers are indispensable for high density and high speed optical data acquisition, storage and transfer applications. Passively mode-locked blue lasers are an attractive alternative for blue laser sources achieved by non-linear frequency conversion techniques. Although over the recent years it has been shown that InGaN/GaN based hetero-structures can be used as potential material for the fabrication of saturable absorbers, passive mode-locking in the blue spectral range has not been realized yet. The main reason for that is the complicated microscopic nature of InGaN/GaN materials and the difficulty to control the dynamics of photo-induced carriers which determine mode-locking properties of the material. In this work, we have characterized different InGaN based hetero-structures as potential saturable absorbers. Three different groups of the samples have been investigated: i) quantum well samples with different numbers of quantum wells grown under optimal conditions; ii)quantum well samples with modified optical properties due to different buffer layer thickness and postgrowth treatment; iii) a multilayered quantum dot sample. The characterized quantum well samples exhibit relatively high optical quality and sufficiently high saturable losses (which can be controlled by alternating a number of the quantum wells). Nevertheless, they have two major disadvantages as saturable absorbers, namely, a very long absorption recovery time (in the order of a few nanoseconds) and a rather high saturation fluence. The long recovery times are not desirable for achieving a stable and self-starting mode-locking without Q-switching. In order to understand the relaxation processes of photo-induced carriers that determine the absorption recovery times of the saturable absorbers, optical properties of the hetero-structures have been extensively studied by using the frequency and time resolved photo-luminescence technique. The obtained data reveal that, directly

  18. Electrically Injected UV-Visible Nanowire Lasers

    Energy Technology Data Exchange (ETDEWEB)

    Wang, George T.; Li, Changyi; Li, Qiming; Liu, Sheng; Wright, Jeremy Benjamin; Brener, Igal; Luk, Ting -Shan; Chow, Weng W.; Leung, Benjamin; Figiel, Jeffrey J.; Koleske, Daniel D.; Lu, Tzu-Ming

    2015-09-01

    There is strong interest in minimizing the volume of lasers to enable ultracompact, low-power, coherent light sources. Nanowires represent an ideal candidate for such nanolasers as stand-alone optical cavities and gain media, and optically pumped nanowire lasing has been demonstrated in several semiconductor systems. Electrically injected nanowire lasers are needed to realize actual working devices but have been elusive due to limitations of current methods to address the requirement for nanowire device heterostructures with high material quality, controlled doping and geometry, low optical loss, and efficient carrier injection. In this project we proposed to demonstrate electrically injected single nanowire lasers emitting in the important UV to visible wavelengths. Our approach to simultaneously address these challenges is based on high quality III-nitride nanowire device heterostructures with precisely controlled geometries and strong gain and mode confinement to minimize lasing thresholds, enabled by a unique top-down nanowire fabrication technique.

  19. Application of Laser Micro-irradiation for Examination of Single and Double Strand Break Repair in Mammalian Cells.

    Science.gov (United States)

    Holton, Nathaniel W; Andrews, Joel F; Gassman, Natalie R

    2017-09-05

    Highly coordinated DNA repair pathways exist to detect, excise and replace damaged DNA bases, and coordinate repair of DNA strand breaks. While molecular biology techniques have clarified structure, enzymatic functions, and kinetics of repair proteins, there is still a need to understand how repair is coordinated within the nucleus. Laser micro-irradiation offers a powerful tool for inducing DNA damage and monitoring the recruitment of repair proteins. Induction of DNA damage by laser micro-irradiation can occur with a range of wavelengths, and users can reliably induce single strand breaks, base lesions and double strand breaks with a range of doses. Here, laser micro-irradiation is used to examine repair of single and double strand breaks induced by two common confocal laser wavelengths, 355 nm and 405 nm. Further, proper characterization of the applied laser dose for inducing specific damage mixtures is described, so users can reproducibly perform laser micro-irradiation data acquisition and analysis.

  20. Enhancement of proton acceleration field in laser double-layer target interaction

    International Nuclear Information System (INIS)

    Gu, Y. J.; Kong, Q.; Li, X. F.; Yu, Q.; Wang, P. X.; Kawata, S.; Izumiyama, T.; Ma, Y. Y.

    2013-01-01

    A mechanism is proposed to enhance a proton acceleration field in laser plasma interaction. A double-layer plasma with different densities is illuminated by an intense short pulse. Electrons are accelerated to a high energy in the first layer by the wakefield. The electrons accelerated by the laser wakefield induce the enhanced target normal sheath (TNSA) and breakout afterburner (BOA) accelerations through the second layer. The maximum proton energy reaches about 1 GeV, and the total charge with an energy higher than 100 MeV is about several tens of μC/μm. Both the acceleration gradient and laser energy transfer efficiency are higher than those in single-target-based TNSA or BOA. The model has been verified by 2.5D-PIC simulations

  1. Photoluminescence measurements of ZnO heterostructures

    International Nuclear Information System (INIS)

    Adachi, Yutaka; Sakaguchi, Isao; Ohashi, Naoki; Haneda, Hajime; Ryoken, Haruki; Takenaka, Tadashi

    2003-01-01

    ZnO thin films were grown on TbAlO 3 single crystal substrates by pulsed laser deposition. In photoluminescence (PL) measurements, strong emissions from TbAlO 3 were observed with the emission from ZnO when the film thickness was less than 100 nm. The relationship between the ZnO film thickness and the emission intensity from TbAlO 3 was investigated in order to determine the penetration depth of excitation light. Information on the heterostructures ranging from the surface to a depth of 300 nm was obtained by PL measurements in this study, and the absorption coefficient for a wavelength of 325 nm was estimated to be 1.31x10 5 cm -1 . (author)

  2. Tunable Electrical and Optical Characteristics in Monolayer Graphene and Few-Layer MoS2 Heterostructure Devices.

    Science.gov (United States)

    Rathi, Servin; Lee, Inyeal; Lim, Dongsuk; Wang, Jianwei; Ochiai, Yuichi; Aoki, Nobuyuki; Watanabe, Kenji; Taniguchi, Takashi; Lee, Gwan-Hyoung; Yu, Young-Jun; Kim, Philip; Kim, Gil-Ho

    2015-08-12

    Lateral and vertical two-dimensional heterostructure devices, in particular graphene-MoS2, have attracted profound interest as they offer additional functionalities over normal two-dimensional devices. Here, we have carried out electrical and optical characterization of graphene-MoS2 heterostructure. The few-layer MoS2 devices with metal electrode at one end and monolayer graphene electrode at the other end show nonlinearity in drain current with drain voltage sweep due to asymmetrical Schottky barrier height at the contacts and can be modulated with an external gate field. The doping effect of MoS2 on graphene was observed as double Dirac points in the transfer characteristics of the graphene field-effect transistor (FET) with a few-layer MoS2 overlapping the middle part of the channel, whereas the underlapping of graphene have negligible effect on MoS2 FET characteristics, which showed typical n-type behavior. The heterostructure also exhibits a strongest optical response for 520 nm wavelength, which decreases with higher wavelengths. Another distinct feature observed in the heterostructure is the peak in the photocurrent around zero gate voltage. This peak is distinguished from conventional MoS2 FETs, which show a continuous increase in photocurrent with back-gate voltage. These results offer significant insight and further enhance the understanding of the graphene-MoS2 heterostructure.

  3. LD-pumped Nd:YVO sub 4 frequency-doubled by CPM LBO laser at 671 nm

    CERN Document Server

    Zheng Quan; Qian Long Sheng; Zhao Ling

    2001-01-01

    A design of LD-pumped high efficient Nd:YVO sub 4 /LBO red laser is reported. Using critical phase-matching LBO for the first time, 671 nm red laser is obtained by 1.342 mu m intracavity frequency doubling. With 800 mW incident pump laser, 52 mW and 97 mW TEM00 mode red laser output are obtained by II-typed and I-typed LBO. The optical-to-optical conversions are up to 6.5% and 12.1% respectively

  4. Graphyne–graphene (nitride) heterostructure as nanocapacitor

    International Nuclear Information System (INIS)

    Bhattacharya, Barnali; Sarkar, Utpal

    2016-01-01

    Highlights: • Binding energy of heterostructures indicates the exothermic nature. • Increasing electric field enhances charge and energy stored in the system. • The external electric fields amplify the charge transfer between two flakes. • The capacitance value gets saturated above a certain electric field. - Abstract: A nanoscale capacitor composed of heterostructure derived from finite size graphyne flake and graphene (nitride) flake has been proposed and investigated using density functional theory (DFT). The exothermic nature of formation process of these heterostructures implies their stability. Significant charge transfer between two flakes generates permanent dipole in this heterostructures. The amount of charge transfer is tunable under the application of external electric field which enhances their applicability in electronics. We have specifically focused on the capacitive properties of different heterostructure composed of graphyne flake and graphene (nitride) flake, i.e., graphyne/graphene, graphyne/h-BN, graphyne/AlN, graphyne/GaN. The charge stored by each flake, energy storage, and capacitance are switchable under external electric field. Thus, our modeled heterostructures are a good candidate as nanoscale capacitor and can be used in nanocircuit. We found that the charge stored by each flake, energy storage, and capacitance value are highest for graphyne/GaN heterostructures.

  5. Graphyne–graphene (nitride) heterostructure as nanocapacitor

    Energy Technology Data Exchange (ETDEWEB)

    Bhattacharya, Barnali; Sarkar, Utpal, E-mail: utpalchemiitkgp@yahoo.com

    2016-10-20

    Highlights: • Binding energy of heterostructures indicates the exothermic nature. • Increasing electric field enhances charge and energy stored in the system. • The external electric fields amplify the charge transfer between two flakes. • The capacitance value gets saturated above a certain electric field. - Abstract: A nanoscale capacitor composed of heterostructure derived from finite size graphyne flake and graphene (nitride) flake has been proposed and investigated using density functional theory (DFT). The exothermic nature of formation process of these heterostructures implies their stability. Significant charge transfer between two flakes generates permanent dipole in this heterostructures. The amount of charge transfer is tunable under the application of external electric field which enhances their applicability in electronics. We have specifically focused on the capacitive properties of different heterostructure composed of graphyne flake and graphene (nitride) flake, i.e., graphyne/graphene, graphyne/h-BN, graphyne/AlN, graphyne/GaN. The charge stored by each flake, energy storage, and capacitance are switchable under external electric field. Thus, our modeled heterostructures are a good candidate as nanoscale capacitor and can be used in nanocircuit. We found that the charge stored by each flake, energy storage, and capacitance value are highest for graphyne/GaN heterostructures.

  6. Complete indium-free CW 200W passively cooled high power diode laser array using double-side cooling technology

    Science.gov (United States)

    Wang, Jingwei; Zhu, Pengfei; Liu, Hui; Liang, Xuejie; Wu, Dihai; Liu, Yalong; Yu, Dongshan; Zah, Chung-en; Liu, Xingsheng

    2017-02-01

    High power diode lasers have been widely used in many fields. To meet the requirements of high power and high reliability, passively cooled single bar CS-packaged diode lasers must be robust to withstand thermal fatigue and operate long lifetime. In this work, a novel complete indium-free double-side cooling technology has been applied to package passively cooled high power diode lasers. Thermal behavior of hard solder CS-package diode lasers with different packaging structures was simulated and analyzed. Based on these results, the device structure and packaging process of double-side cooled CS-packaged diode lasers were optimized. A series of CW 200W 940nm high power diode lasers were developed and fabricated using hard solder bonding technology. The performance of the CW 200W 940nm high power diode lasers, such as output power, spectrum, thermal resistance, near field, far field, smile, lifetime, etc., is characterized and analyzed.

  7. Research on the radiation exposure “memory effects” in AlGaAs heterostructures

    International Nuclear Information System (INIS)

    Gradoboev, A V; Sednev, V V

    2015-01-01

    Radiation exposure and long running time cause degradation of semiconductors' structures as well as semiconductors based on these structures. Besides, long running time can be the reason of partial radiation defects annealing. The purpose of the research work is to study the “memory effect” that happens during fast neuron radiation in AlGaAs heterostructures. Objects of the research are Infrared Light Emitting Electrodes (IRED) based on doubled AlGaAs heterostructures. During the experimental research LEDs were preliminarily radiated with fast neutrons, and radiation defects were annealed within the condition of current training with high temperatures, then emission power was measured. The research proved the existence of the “memory effect” that results in radiation stability enhancement with subsequent radiation. Possible mechanisms of the “memory effect” occurrence are under review. (paper)

  8. Photoreflectance and Raman Study of Surface Electric States on AlGaAs/GaAs Heterostructures

    Directory of Open Access Journals (Sweden)

    Luis Zamora-Peredo

    2016-01-01

    Full Text Available Photoreflectance (PR and Raman are two very useful spectroscopy techniques that usually are used to know the surface electronic states in GaAs-based semiconductor devices. However, although they are exceptional tools there are few reports where both techniques were used in these kinds of devices. In this work, the surface electronic states on AlGaAs/GaAs heterostructures were studied in order to identify the effect of factors like laser penetration depth, cap layer thickness, and surface passivation over PR and Raman spectra. PR measurements were performed alternately with two lasers (532 nm and 375 nm wavelength as the modulation sources in order to identify internal and surface features. The surface electric field calculated by PR analysis decreased whereas the GaAs cap layer thickness increased, in good agreement with a similar behavior observed in Raman measurements (IL-/ILO ratio. When the heterostructures were treated by Si-flux, these techniques showed contrary behaviors. PR analysis revealed a diminution in the surface electric field due to a passivation process whereas the IL-/ILO ratio did not present the same behavior because it was dominated by the depletion layers width (cap layer thickness and the laser penetration depth.

  9. Enhancement of photovoltaic effects and photoconductivity observed in Co-doped amorphous carbon/silicon heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Jiang, Y. C.; Gao, J., E-mail: jugao@hku.hk [Research Center for Solid State Physics and Materials, School of Mathematics and Physics, Suzhou University of Science and Technology, Suzhou 215009, Jiangsu (China)

    2016-08-22

    Co-doped amorphous carbon (Co-C)/silicon heterostructures were fabricated by growing Co-C films on n-type Si substrates using pulsed laser deposition. A photovoltaic effect (PVE) has been observed at room temperature. Open-circuit voltage V{sub oc} = 320 mV and short-circuit current density J{sub sc }= 5.62 mA/cm{sup 2} were measured under illumination of 532-nm light with the power of 100 mW/cm{sup 2}. In contrast, undoped amorphous carbon/Si heterostructures revealed no significant PVE. Based on the PVE and photoconductivity (PC) investigated at different temperatures, it was found that the energy conversion efficiency increased with increasing the temperature and reached the maximum at room temperature, while the photoconductivity showed a reverse temperature dependence. The observed competition between PVE and PC was correlated with the way to distribute absorbed photons. The possible mechanism, explaining the enhanced PVE and PC in the Co-C/Si heterostructures, might be attributed to light absorption enhanced by localized surface plasmons in Co nanoparticles embedded in the carbon matrix.

  10. Nanoparticle Stability in Axial InAs-InP Nanowire Heterostructures with Atomically Sharp Interfaces.

    Science.gov (United States)

    Zannier, Valentina; Rossi, Francesca; Dubrovskii, Vladimir G; Ercolani, Daniele; Battiato, Sergio; Sorba, Lucia

    2018-01-10

    The possibility to expand the range of material combinations in defect-free heterostructures is one of the main motivations for the great interest in semiconductor nanowires. However, most axial nanowire heterostructures suffer from interface compositional gradients and kink formation, as a consequence of nanoparticle-nanowire interactions during the metal-assisted growth. Understanding such interactions and how they affect the growth mode is fundamental to achieve a full control over the morphology and the properties of nanowire heterostructures for device applications. Here we demonstrate that the sole parameter affecting the growth mode (straight or kinked) of InP segments on InAs nanowire stems by the Au-assisted method is the nanoparticle composition. Indeed, straight InAs-InP nanowire heterostructures are obtained only when the In/Au ratio in the nanoparticles is low, typically smaller than 1.5. For higher In content, the InP segments tend to kink. Tailoring the In/Au ratio by the precursor fluxes at a fixed growth temperature enables us to obtain straight and radius-uniform InAs-InP nanowire heterostructures (single and double) with atomically sharp interfaces. We present a model that is capable of describing all the experimentally observed phenomena: straight growth versus kinking, the stationary nanoparticle compositions in pure InAs and InAs-InP nanowires, the crystal phase trends, and the interfacial abruptness. By taking into account different nanowire/nanoparticle interfacial configurations (forming wetting or nonwetting monolayers in vertical or tapered geometry), our generalized model provides the conditions of nanoparticle stability and abrupt heterointerfaces for a rich variety of growth scenarios. Therefore, our results provide a powerful tool for obtaining high quality InAs-InP nanowire heterostructures with well-controlled properties and can be extended to other material combinations based on the group V interchange.

  11. Femtosecond laser ablation of silver foil with single and double pulses

    CSIR Research Space (South Africa)

    Roberts, DE

    2009-01-01

    Full Text Available The average ablation depth per pulse of silver foil by 130 fs laser pulses has been measured in vacuum over a range of three orders of magnitude of pulse fluence up to 900 J cm-2. In addition, double pulses with separations up to 3.4 ns have been...

  12. Lateral topological crystalline insulator heterostructure

    Science.gov (United States)

    Sun, Qilong; Dai, Ying; Niu, Chengwang; Ma, Yandong; Wei, Wei; Yu, Lin; Huang, Baibiao

    2017-06-01

    The emergence of lateral heterostructures fabricated by two-dimensional building blocks brings many exciting realms in material science and device physics. Enriching available nanomaterials for creating such heterostructures and enabling the underlying new physics is highly coveted for the integration of next-generation devices. Here, we report a breakthrough in lateral heterostructure based on the monolayer square transition-metal dichalcogenides MX2 (M  =  W, X  =  S/Se) modules. Our results reveal that the MX2 lateral heterostructure (1S-MX2 LHS) can possess excellent thermal and dynamical stability. Remarkably, the highly desired two-dimensional topological crystalline insulator phase is confirmed by the calculated mirror Chern number {{n}\\text{M}}=-1 . A nontrivial band gap of 65 meV is obtained with SOC, indicating the potential for room-temperature observation and applications. The topologically protected edge states emerge at the edges of two different nanoribbons between the bulk band gap, which is consistent with the mirror Chern number. In addition, a strain-induced topological phase transition in 1S-MX2 LHS is also revealed, endowing the potential utilities in electronics and spintronics. Our predictions not only introduce new member and vitality into the studies of lateral heterostructures, but also highlight the promise of lateral heterostructure as appealing topological crystalline insulator platforms with excellent stability for future devices.

  13. Characterization of amorphous multilayered ZnO-SnO2 heterostructure thin films and their field effect electronic properties

    International Nuclear Information System (INIS)

    Lee, Su-Jae; Hwang, Chi-Sun; Pi, Jae-Eun; Yang, Jong-Heon; Oh, Himchan; Cho, Sung Haeng; Cho, Kyoung-Ik; Chu, Hye Yong

    2014-01-01

    Multilayered ZnO-SnO 2 heterostructure thin films were produced using pulsed laser ablation of pie-shaped ZnO-SnO 2 oxides target, and their structural and field effect electronic transport properties were investigated as a function of the thickness of the ZnO and SnO 2 layers. The films have an amorphous multilayered heterostructure composed of the periodic stacking of the ZnO and SnO 2 layers. The field effect electronic properties of amorphous multilayered ZnO-SnO 2 heterostructure thin film transistors (TFTs) are highly dependent on the thickness of the ZnO and SnO 2 layers. The highest electron mobility of 37 cm 2 /V s, a low subthreshold swing of a 0.19 V/decade, a threshold voltage of 0.13 V, and a high drain current on-to-off ratio of ∼10 10 obtained for the amorphous multilayered ZnO(1.5 nm)-SnO 2 (1.5 nm) heterostructure TFTs. These results are presumed to be due to the unique electronic structure of an amorphous multilayered ZnO-SnO 2 heterostructure film consisting of ZnO, SnO 2 , and ZnO-SnO 2 interface layers

  14. Manipulative Properties of Asymmetric Double Quantum Dots via Laser and Gate Voltage

    International Nuclear Information System (INIS)

    Shun-Cai, Zhao; Zheng-Dong, Liu

    2009-01-01

    We present a density matrix approach for the theoretical description of an asymmetric double quantum dot (QD) system. The results show that the properties of gain, absorption and dispersion of the double QD system, the population of the state with one hole in one dot and an electron in another dot transferred by tunneling can be manipulated by a laser pulse or gate voltage. Our scheme may demonstrate the possibility of electro-optical manipulation of quantum systems. (condensed matter: electronicstructure, electrical, magnetic, and opticalproperties)

  15. Frequency-doubled green picosecond laser based on K3B6O10Br nonlinear optical crystal

    Science.gov (United States)

    Meng, Luping; Zhang, Ling; Hou, Zhanyu; Wang, Lirong; Xu, Hui; Shi, Meng; Wang, Lingwu; Yang, Yingying; Qi, Yaoyao; He, Chaojian; Yu, Haijuan; Lin, Xuechun; Su, Fufang; Xia, Mingjun; Li, Rukang

    2018-05-01

    We report a frequency-doubled green picosecond (ps) laser based on K3B6O10Br (KBB) nonlinear optical crystal with cutting angle of θ = 34.7° and φ = 30°. Through intracavity frequency doubling using a type I phase-matched KBB crystal with dimensions of 4 mm × 4 mm × 13.2 mm, the average output power of 185.00 mW green ps laser was obtained with a repetition rate of 80 MHz and pulse width of 25.0 ps. In addition, we present external frequency doubling using KBB crystal. The average output power of 3.00 W green ps laser was generated with a repetition rate of 10 kHz and pulse width of 38.1 ps, which corresponds to a pulse energy of 0.30 mJ and a peak power 7.89 MW, respectively. The experimental results show that KBB crystal is a promising nonlinear optical material.

  16. Computer-automated tuning of semiconductor double quantum dots into the single-electron regime

    NARCIS (Netherlands)

    Baart, T.A.; Eendebak, P.T.; Reichl, C.; Wegscheider, W.; Vandersypen, L.M.K.

    2016-01-01

    We report the computer-automated tuning of gate-defined semiconductor double quantum dots in GaAs heterostructures. We benchmark the algorithm by creating three double quantum dots inside a linear array of four quantum dots. The algorithm sets the correct gate voltages for all the gates to tune the

  17. Quantum interference in laser-induced nonsequential double ionization

    Science.gov (United States)

    Quan, Wei; Hao, XiaoLei; Wang, YanLan; Chen, YongJu; Yu, ShaoGang; Xu, SongPo; Xiao, ZhiLei; Sun, RenPing; Lai, XuanYang; Hu, ShiLin; Liu, MingQing; Shu, Zheng; Wang, XiaoDong; Li, WeiDong; Becker, Wilhelm; Liu, XiaoJun; Chen, Jing

    2017-09-01

    Quantum interference plays an important role in various intense-laser-driven atomic phenomena, e.g., above-threshold ionization and high-order-harmonic generation, and provides a useful tool in ultrafast imaging of atomic and molecular structure and dynamics. However, it has eluded observation in nonsequential double ionization (NSDI), which serves as an ideal prototype to study electron-electron correlation. Thus far, NSDI usually could be well understood from a semiclassical perspective, where all quantum aspects have been ignored after the first electron has tunneled. Here we perform coincidence measurements for NSDI of xenon subject to laser pulses at 2400 nm. It is found that the intensity dependence of the asymmetry parameter between the yields in the second and fourth quadrants and those in the first and third quadrants of the electron-momentum-correlation distributions exhibits a peculiar fast oscillatory structure, which is beyond the scope of the semiclassical picture. Our theoretical analysis indicates that this oscillation can be attributed to interference between the contributions of different excited states in the recollision-excitation-with-subsequent-ionization channel. Our work demonstrates the significant role of quantum interference in NSDI and may create an additional pathway towards manipulation and imaging of the ultrafast atomic and molecular dynamics in intense laser fields.

  18. High-power Yb- and Tm-doped double tungstate channel waveguide lasers

    NARCIS (Netherlands)

    van Dalfsen, Koop; Geskus, D.; Ay, F.; Worhoff, Kerstin; Aravazhi, S.; Pollnau, Markus

    The potassium double tungstates KGd(WO4)2, KY(WO4)2, and KLu(WO4)2 are excellent candidates for solid-state lasers because of their high refractive index of ~2.0-2.1, the large transition cross-sections of rare-earth (RE3+) ions doped into these hosts, and a reasonably large thermal conductivity of

  19. Micro-Welding of Copper Plate by Frequency Doubled Diode Pumped Pulsed Nd:YAG Laser

    Science.gov (United States)

    Nakashiba, Shin-Ichi; Okamoto, Yasuhiro; Sakagawa, Tomokazu; Takai, Sunao; Okada, Akira

    A pulsed laser of 532 nm wavelength with ms range pulse duration was newly developed by second harmonic generation of diode pumped pulsed Nd:YAG laser. High electro-optical conversion efficiency more than 13% could be achieved, and 1.5 kW peak power green laser pulse was put in optical fiber of 100 μm in diameter. In micro- welding of 1.0 mm thickness copper plate, a keyhole welding was successfully performed by 1.0 kW peak power at spot diameter less than 200 μm. The frequency doubled pulsed laser improved the processing efficiency of copper welding, and narrow and deep weld bead was stably obtained.

  20. Experimental study of a Q-switched ytterbium-doped double-clad fiber laser

    International Nuclear Information System (INIS)

    Anzueto S, G.; Estudillo A, M.; Martinez R, A.; Torres G, I.; Selvas A, R.

    2008-01-01

    We report an experimental characterization of a Q-switched operation of an all-fiber laser using , 30 m of a double-clad ytterbium-doped fiber spliced to a piece of single-mode un-doped holey fiber. Loss modulation in the splicing point between the active and un-doped fiber due to a substantial coupling of light into lossy cladding modes stimulates pulsed operation of the fiber laser. Pulse energy of ∼2.5 μJ was estimated and the repetition rate was measured in the range of 4-16 KHz. (Author)

  1. Passively Q-switched self-frequency-doubled Nd3+:GdCa4O(BO3)3 laser

    International Nuclear Information System (INIS)

    Zhang, Xingyu; Zhao, Shengzhi; Wang, Qingpu; Zhang, Shujun; Sun, Lianke; Liu, Xunmin; Zhang, Shaojun; Chen, Huanchu

    2001-01-01

    The performance of a flash-lamp-pumped self-frequency-doubled Nd 3+ :GdCa 4 O(BO 3 ) 3 (Nd:GdCOB) laser that is passively Q switched with Cr 4+ :YAG saturable absorbers is demonstrated. The maximum 0.53-μm pulse energy obtained is 2.6 mJ, and the maximum peak intensity is 15 MW/cm2. The dependence of the pulse characteristics on the orientation of the saturable absorber and on the cavity length is measured. Meanwhile, the transversal distribution of the intracavity photon density is taken into account in the rate equations for an intracavity frequency-doubled passively Q-switched laser, and the solutions are used to account for the behavior of the passively Q-switched Nd:GdCOB laser. [copyright] 2001 Optical Society of America

  2. Rectifying magnetic tunnel diode like behavior in Co2MnSi/ZnO/p-Si heterostructure

    Science.gov (United States)

    Maji, Nilay; Nath, T. K.

    2018-04-01

    The rectifying magnetic tunnel diode like behavior has been observed in Co2MnSi/ZnO/p-Si heterostructure. At first an ultra thin layer of ZnO has been deposited on p-Si (100) substrate with the help of pulsed laser deposition (PLD). After that a highly spin-polarized Heusler alloy Co2MnSi (CMS) film (250 nm) has been grown on ZnO/p-Si using electron beam physical vapor deposition technique. The phase purity of the sample has been confirmed through high resolution X-Ray diffraction technique. The electrical transport properties have been investigated at various isothermal conditions in the temperature range of 77-300 K. The current-voltage characteristics exhibit an excellent rectifying tunnel diode like behavior throughout the temperature regime. The current (I) across the junction has been found to decrease with the application of an external magnetic field parallel to the plane of the CMS film clearly indicating positive junction magnetoresistance (JMR) of the heterostructure. The magnetic field dependent JMR behavior of our heterostructure has been investigated in the same temperature range. Our heterostructure clearly demonstrates a giant positive JMR at 78 K (˜264%) and it starts decreasing with increasing temperature. If we compare our results with earlier reported results on other heterostructures, it can be seen that the JMR value for our heterojunction saturates at a much lower external magnetic field, thus creating it a better alternative for spin tunnel diodes in upcoming spintronics device applications.

  3. Laser at 532 nm by intracavity frequency-doubling in BBO

    Science.gov (United States)

    Yuan, Xiandan; Wang, Jinsong; Chen, Yongqi; Wu, Yulong; Qi, Yunfei; Sun, Meijiao; Wang, Qi

    2017-06-01

    A simple and compact linear resonator green laser at 532 nm is generated by intracavity frequency-doubling of a diode-side-pumped acousto-optically (AO) Q-switched Nd:YAG laser at 1064 nm. Two acousto-optic Q-switches were placed orthogonally with each other to improve the hold-off capacity. As high as 214 W of continuous-wave (CW) and 154 W of quasi-continuous-wave (QCW) output power at 1064 nm were obtained when the pumping power was 1598 W. The type I phase-matched BBO crystal was used as the nonlinear medium in the second harmonic generation. A green laser with an average output power of 37 W was obtained at a repetition rate of 20 kHz and a pulse width of 54 ns, which corresponds to pulse energy of 1.85 mJ per pulse and a peak power 34.26 kW, respectively. Project supported by the Beijing Engineering Technology Research Center of All-Solid-State Lasers Advanced Manufacturing, the National High Technology Research and Development Program of China (No. 2014AA032607), and the National Natural Science Foundation of China (Nos. 61404135, 61405186, 61308032, 61308033).

  4. A InGaN/GaN quantum dot green (λ=524 nm) laser

    KAUST Repository

    Zhang, Meng; Banerjee, Animesh; Lee, Chi-Sen; Hinckley, John M.; Bhattacharya, Pallab

    2011-01-01

    The characteristics of self-organized InGaN/GaN quantum dot lasers are reported. The laser heterostructures were grown on c-plane GaN substrates by plasma-assisted molecular beam epitaxy and the laser facets were formed by focused ion beam etching

  5. Efficient generation of 3.5W laser light at 515nm by frequency doubling a single-frequency high power DBR tapered diode laser

    DEFF Research Database (Denmark)

    Jensen, Ole Bjarlin; Hansen, Anders Kragh; Müller, André

    2017-01-01

    More than 3.5 W of green light at 515 nm is generated by frequency doubling a single-frequency high power DBR tapered diode laser. The frequency doubling is performed in a cascade of PPMgLN and PPMgSLT crystals in order to reach high power and avoid thermal effects present in PPMgLN at high power...

  6. Impurity-induced states in superconducting heterostructures

    Science.gov (United States)

    Liu, Dong E.; Rossi, Enrico; Lutchyn, Roman M.

    2018-04-01

    Heterostructures allow the realization of electronic states that are difficult to obtain in isolated uniform systems. Exemplary is the case of quasi-one-dimensional heterostructures formed by a superconductor and a semiconductor with spin-orbit coupling in which Majorana zero-energy modes can be realized. We study the effect of a single impurity on the energy spectrum of superconducting heterostructures. We find that the coupling between the superconductor and the semiconductor can strongly affect the impurity-induced states and may induce additional subgap bound states that are not present in isolated uniform superconductors. For the case of quasi-one-dimensional superconductor/semiconductor heterostructures we obtain the conditions for which the low-energy impurity-induced bound states appear.

  7. Suppression of suprathermal ions from a colloidal microjet target containing SnO2 nanoparticles by using double laser pulses

    International Nuclear Information System (INIS)

    Higashiguchi, Takeshi; Kaku, Masanori; Katto, Masahito; Kubodera, Shoichi

    2007-01-01

    We have demonstrated suppression of suprathermal ions from a colloidal microjet target plasma containing tin-dioxide (SnO 2 ) nanoparticles irradiated by double laser pulses. We observed a significant decrease of the tin and oxygen ion signals in the charged-state-separated energy spectra when double laser pulses were irradiated. The peak energy of the singly ionized tin ions decreased from 9 to 3 keV when a preplasma was produced. The decrease in the ion energy, considered as debris suppression, is attributed to the interaction between an expanding low-density preplasma and a main laser pulse

  8. Suppression of suprathermal ions from a colloidal microjet target containing SnO2 nanoparticles by using double laser pulses

    Science.gov (United States)

    Higashiguchi, Takeshi; Kaku, Masanori; Katto, Masahito; Kubodera, Shoichi

    2007-10-01

    We have demonstrated suppression of suprathermal ions from a colloidal microjet target plasma containing tin-dioxide (SnO2) nanoparticles irradiated by double laser pulses. We observed a significant decrease of the tin and oxygen ion signals in the charged-state-separated energy spectra when double laser pulses were irradiated. The peak energy of the singly ionized tin ions decreased from 9to3keV when a preplasma was produced. The decrease in the ion energy, considered as debris suppression, is attributed to the interaction between an expanding low-density preplasma and a main laser pulse.

  9. Organo-layered double hydroxides composite thin films deposited by laser techniques

    Energy Technology Data Exchange (ETDEWEB)

    Birjega, R. [National Institute for Lasers, Plasma and Radiation Physics, 409 Atomistilor Str., 77125 Bucharest-Magurele (Romania); Vlad, A., E-mail: angela.vlad@gmail.com [National Institute for Lasers, Plasma and Radiation Physics, 409 Atomistilor Str., 77125 Bucharest-Magurele (Romania); Matei, A.; Dumitru, M.; Stokker-Cheregi, F.; Dinescu, M. [National Institute for Lasers, Plasma and Radiation Physics, 409 Atomistilor Str., 77125 Bucharest-Magurele (Romania); Zavoianu, R. [University of Bucharest, Faculty of Chemistry, Department of Chemical Technology and Catalysis, 4-12 Regina Elisabeta Bd., Bucharest 030018 (Romania); Raditoiu, V.; Corobea, M.C. [National R.& D. Institute for Chemistry and Petrochemistry, ICECHIM, 202 Splaiul Independentei Str., CP-35-274, 060021 Bucharest (Romania)

    2016-06-30

    Highlights: • PLD and MAPLE was successfully used to produce organo-layered double hydroxides. • The organic anions (dodecyl sulfate-DS) were intercalated in co-precipitation step. • Zn2.5Al-LDH (Zn/Al = 2.5) and Zn2.5Al-DS thin films obtained in this work could be suitable for further applications as hydrophobic surfaces. - Abstract: We used laser techniques to create hydrophobic thin films of layered double hydroxides (LDHs) and organo-modified LDHs. A LDH based on Zn-Al with Zn{sup 2+}/Al{sup 3+} ratio of 2.5 was used as host material, while dodecyl sulfate (DS), which is an organic surfactant, acted as guest material. Pulsed laser deposition (PLD) and matrix assisted pulsed laser evaporation (MAPLE) were employed for the growth of the films. The organic anions were intercalated in co-precipitation step. The powders were subsequently used either as materials for MAPLE, or they were pressed and used as targets for PLD. The surface topography of the thin films was investigated by atomic force microscopy (AFM), the crystallographic structure of the powders and films was checked by X-ray diffraction. FTIR spectroscopy was used to evidence DS interlayer intercalation, both for powders and the derived films. Contact angle measurements were performed in order to establish the wettability properties of the as-prepared thin films, in view of functionalization applications as hydrophobic surfaces, owing to the effect of DS intercalation.

  10. Multi-color imaging of magnetic Co/Pt heterostructures

    Directory of Open Access Journals (Sweden)

    Felix Willems

    2017-01-01

    Full Text Available We present an element specific and spatially resolved view of magnetic domains in Co/Pt heterostructures in the extreme ultraviolet spectral range. Resonant small-angle scattering and coherent imaging with Fourier-transform holography reveal nanoscale magnetic domain networks via magnetic dichroism of Co at the M2,3 edges as well as via strong dichroic signals at the O2,3 and N6,7 edges of Pt. We demonstrate for the first time simultaneous, two-color coherent imaging at a free-electron laser facility paving the way for a direct real space access to ultrafast magnetization dynamics in complex multicomponent material systems.

  11. Growth and characterization of epitaxial thin films and multiferroic heterostructures of ferromagnetic and ferroelectric materials

    Science.gov (United States)

    Mukherjee, Devajyoti

    Multiferroic materials exhibit unique properties such as simultaneous existence of two or more of coupled ferroic order parameters (ferromagnetism, ferroelectricity, ferroelasticity or their anti-ferroic counterparts) in a single material. Recent years have seen a huge research interest in multiferroic materials for their potential application as high density non-volatile memory devices. However, the scarcity of these materials in single phase and the weak coupling of their ferroic components have directed the research towards multiferroic heterostructures. These systems operate by coupling the magnetic and electric properties of two materials, generally a ferromagnetic material and a ferroelectric material via strain. In this work, horizontal heterostructures of composite multiferroic materials were grown and characterized using pulsed laser ablation technique. Alternate magnetic and ferroelectric layers of cobalt ferrite and lead zirconium titanate, respectively, were fabricated and the coupling effect was studied by X-ray stress analysis. It was observed that the interfacial stress played an important role in the coupling effect between the phases. Doped zinc oxide (ZnO) heterostructures were also studied where the ferromagnetic phase was a layer of manganese doped ZnO and the ferroelectric phase was a layer of vanadium doped ZnO. For the first time, a clear evidence of possible room temperature magneto-elastic coupling was observed in these heterostructures. This work provides new insight into the stress mediated coupling mechanisms in composite multiferroics.

  12. A Q-switched Ho:YAG laser with double anti-misalignment corner cubes pumped by a diode-pumped Tm:YLF laser

    Science.gov (United States)

    Wang, Y. P.; Dai, T. Y.; Wu, J.; Ju, Y. L.; Yao, B. Q.

    2018-06-01

    We report the acousto-optically Q-switched Ho:YAG laser with double anti-misalignment corner cubes pumped by a diode-pumped Tm:YLF laser. In the continuous-wave operation of Ho:YAG laser, the maximum s-polarized output power of 3.2 W at 2090.3 nm was obtained under the absorbed pump power of 12.9 W by rotating the fast axis of quarter-wave plate to change the output transmission of laser cavity. The corresponding optical-to-optical conversion efficiency was 24.8% and the slope efficiency was 55.7%. When one of the corner cubes was rotated to 11.8° around vertical direction or 6.7° around horizontal direction, the laser could still operate stably. For the Q-switched operation, the pulse energy of Ho:YAG laser was 9.9 mJ with a pulse width of 53 ns at the repetition rate of 100 Hz, resulting in a peak power of 186.8 kW. The beam quality factor M2 of Ho:YAG laser was 1.3.

  13. 1 CW green self-frequency-doubled Yb:YAl3(BO3)4 laser

    International Nuclear Information System (INIS)

    Dekker, P.; Dawes, J.; Wang, P.; Piper, J.

    2000-01-01

    Full text: We report 1.1 W continuous wave (CW) green output from a 977nm diode-end-pumped self-frequency-doubled Yb:YAB laser, with a diode-to-green optical conversion efficiency of 10%. Wavelength tunability from 513-546nm has been demonstrated

  14. II-VI/III-V Heterojunction Lasers

    National Research Council Canada - National Science Library

    Gunshor, Robert

    1999-01-01

    ... in both. In the second part of the program we studied the growth and the optical evaluation of wide bandgap nitride heterostructures, an effort which included the first reporting of a GaN-based laser to be fabricated...

  15. Comparison of gated and non-gated detectors for double-pulse laser induced plasma analysis of trace elements in iron oxide

    International Nuclear Information System (INIS)

    Heilbrunner, H.; Huber, N.; Wolfmeir, H.; Arenholz, E.; Pedarnig, J.D.; Heitz, J.

    2012-01-01

    Double-pulse laser-induced breakdown spectroscopy (LIBS) is an emerging technique for accurate compositional analysis of many different materials. We present results of collinear double-pulse LIBS for analysis of the trace elements aluminum, phosphorus and boron in sintered iron oxide targets. The samples were ablated in air by double-pulse Nd:YAG laser radiation (6 ns pulse duration, laser wavelength of 532 nm) and spectra were recorded with an Echelle spectrometer equipped either with a CCD (charge coupled device) or an ICCD (intensified charge coupled device) camera. For the trace elements aluminum and phosphorus, the use of the CCD detector system resulted in considerable higher signal-to-noise ratios and/or better limits of detection compared to the results achieved with the ICCD detector. The use of CCD double-pulse LIBS enables to detect low concentrations of phosphorus with a limit of detection of 10 ppm by evaluating the UV line at 214.91 nm, which overlaps with a Fe I line. Compared to the ICCD system, the CCD system requires the accumulation of a higher number of laser double-pulses to achieve acceptable signal quality. This can be disadvantageous for elements showing pronounced depletion effects as for the trace element boron in sintered iron oxide targets. - Highlights: ► Direct comparison of double-pulse LIBS analysis using CCD and ICCD detectors ► Double-pulse LIBS technique for monitoring of trace elements in iron oxide ► CCD detector can result in better signal-to-noise ratios and limits of detection. ► Low P concentrations detectable by CCD double-pulse LIBS of the line at 214.91 nm ► CCD system disadvantageous for elements showing pronounced depletion effects

  16. Tunnelling and relaxation in semiconductor double quantum wells

    International Nuclear Information System (INIS)

    Ferreira, R.; Bastard, G.

    1997-01-01

    Double quantum wells are among the simplest semiconductor heterostructures exhibiting tunnel coupling. The existence of a quantum confinement effect for the energy levels of a narrow single quantum well has been largely studied. In double quantum wells, in addition to these confinement effects which characterize the levels of the isolated wells, one faces the problem of describing the eigenstates of systems interacting weakly through a potential barrier. In addition, the actual structures differ from the ideal systems studied in the quantum mechanics textbooks in many aspects. The presence of defects leads, for instance, to an irreversible time evolution for a population of photocreated carriers. This irreversible transfer is now clearly established experimentally. The resonant behaviour of the transfer has also been evidenced, from the study of biased structures. If the existence of an interwell transfer is now clearly established from the experimental point of view, its theoretical description, however, is not fully satisfactory. This review focuses on the theoretical description of the energy levels and of the interwell assisted transfer in double quantum wells. We shall firstly outline the problem of tunnel coupling in semiconductor heterostructures and then discuss the single particle and exciton eigenstates in double quantum wells. In the remaining part of the review we shall present and critically review a few theoretical models used to describe the assisted interwell transfer in these structures. (author)

  17. Infrared laser driven double proton transfer. An optimal control theory study

    Science.gov (United States)

    Abdel-Latif, Mahmoud K.; Kühn, Oliver

    2010-02-01

    Laser control of ultrafast double proton transfer is investigated for a two-dimensional model system describing stepwise and concerted transfer pathways. The pulse design has been done by employing optimal control theory in combination with the multiconfiguration time-dependent Hartree wave packet propagation. The obtained laser fields correspond to multiple pump-dump pulse sequences. Special emphasis is paid to the relative importance of stepwise and concerted transfer pathways for the driven wave packet and its dependence on the parameters of the model Hamiltonian as well as on the propagation time. While stepwise transfer is dominating in all cases considered, for high barrier systems concerted transfer proceeding via tunneling can make a contribution.

  18. Ratios of double to single ionization of He and Ne by strong 400-nm laser pulses using the quantitative rescattering theory

    Science.gov (United States)

    Chen, Zhangjin; Li, Xiaojin; Zatsarinny, Oleg; Bartschat, Klaus; Lin, C. D.

    2018-01-01

    We present numerical simulations of the ratio between double and single ionization of He and Ne by intense laser pulses at wavelengths of 390 and 400 nm, respectively. The yields of doubly charged ions due to nonsequential double ionization (NSDI) are obtained by employing the quantitative rescattering (QRS) model. In this model, the NSDI ionization probability is expressed as a product of the returning electron wave packet (RWP) and the total scattering cross sections for laser-free electron impact excitation and electron impact ionization of the parent ion. According to the QRS theory, the same RWP is also responsible for the emission of high-energy above-threshold ionization photoelectrons. To obtain absolute double-ionization yields, the RWP is generated by solving the time-dependent Schrödinger equation (TDSE) within a one-electron model. The same TDSE results can also be taken to obtain single-ionization yields. By using the TDSE results to calibrate single ionization and the RWP obtained from the strong-field approximation, we further simplify the calculation such that the nonuniform laser intensity distribution in the focused laser beam can be accounted for. In addition, laser-free electron impact excitation and ionization cross sections are calculated using the state-of-the-art many-electron R -matrix theory. The simulation results for double-to-single-ionization ratios are found to compare well with experimental data and support the validity of the nonsequential double-ionization mechanism for the covered intensity region.

  19. Simulation of the dynamics of a multimode bipolarisation class B laser with intracavity frequency doubling

    International Nuclear Information System (INIS)

    Khandokhin, Pavel A

    2006-01-01

    A model of a multimode bipolarisation solid-state laser with intracavity frequency doubling is developed. The interaction of different longitudinal modes is described within the framework of rate-equation approximation while the interaction of each pair of orthogonally polarised modes with identical longitudinal indices is described taking into account the phase-sensitive interaction of these modes. Comparison with the experimental data is performed. (dinamics processes in lasers)

  20. Frequency doubling of an InGaAs multiple quantum wells semiconductor disk laser

    Science.gov (United States)

    Lidan, Jiang; Renjiang, Zhu; Maohua, Jiang; Dingke, Zhang; Yuting, Cui; Peng, Zhang; Yanrong, Song

    2018-01-01

    We demonstrate a good beam quality 483 nm blue coherent radiation from a frequency doubled InGaAs multiple quantum wells semiconductor disk laser. The gain chip is consisted of 6 repeats of strain uncompensated InGaAs/GaAs quantum wells and 25 pairs of GaAs/AlAs distributed Bragg reflector. A 4 × 4 × 7 mm3 type I phase-matched BBO nonlinear crystal is used in a V-shaped laser cavity for the second harmonic generation, and 210 mW blue output power is obtained when the absorbed pump power is 3.5 W. The M2 factors of the laser beam in x and y directions are about 1.04 and 1.01, respectively. The output power of the blue laser is limited by the relatively small number of the multiple quantum wells, and higher power can be expected by increasing the number of the multiple quantum wells and improving the heat management of the laser.

  1. Comparison of symmetric and asymmetric double quantum well extended-cavity diode lasers for broadband passive mode-locking at 780  nm.

    Science.gov (United States)

    Christopher, Heike; Kovalchuk, Evgeny V; Wenzel, Hans; Bugge, Frank; Weyers, Markus; Wicht, Andreas; Peters, Achim; Tränkle, Günther

    2017-07-01

    We present a compact, mode-locked diode laser system designed to emit a frequency comb in the wavelength range around 780 nm. We compare the mode-locking performance of symmetric and asymmetric double quantum well ridge-waveguide diode laser chips in an extended-cavity diode laser configuration. By reverse biasing a short section of the diode laser chip, passive mode-locking at 3.4 GHz is achieved. Employing an asymmetric double quantum well allows for generation of a mode-locked optical spectrum spanning more than 15 nm (full width at -20  dB) while the symmetric double quantum well device only provides a bandwidth of ∼2.7  nm (full width at -20  dB). Analysis of the RF noise characteristics of the pulse repetition rate shows an RF linewidth of about 7 kHz (full width at half-maximum) and of at most 530 Hz (full width at half-maximum) for the asymmetric and symmetric double quantum well devices, respectively. Investigation of the frequency noise power spectral density at the pulse repetition rate shows a white noise floor of approximately 2100  Hz 2 /Hz and of at most 170  Hz 2 /Hz for the diode laser employing the asymmetric and symmetric double quantum well structures, respectively. The pulse width is less than 10 ps for both devices.

  2. Plasmonics effect of Ag nanoislands covered n-Al:ZnO/p-Si heterostructure

    Energy Technology Data Exchange (ETDEWEB)

    Venugopal, N., E-mail: venu369@gmail.com; Kaur, Gurpreet, E-mail: gkaurdnt@iitr.ernet.in; Mitra, Anirban, E-mail: mitrafph@iitr.ernet.in

    2014-11-30

    Highlights: • Effect of Ag plasmonic nanoislands on n-aluminum doped zinc oxide (Al:ZnO)/p-silicon (p-Si) heterostructure device. • Morphology of Ag nanoisland in consequence with the optical (absorbance and photoluminescence) and electrical properties of the device. • Ag nanoisland/Al:ZnO heterostructure shows remarkable improvement of absorbance in both visible and UV region compare to the bare silicon. • Near band edge emission in photoluminescence has been enhanced with the deposition of Ag nanoisland. • Dark and illumination current density also increases with the deposition of Ag nanoisland. - Abstract: A plasmonic heterostructure of Ag (nanoisland)/n-Al:ZnO/p-Si is fabricated using pulsed laser deposition and thermal evaporation method. In this structure Al:ZnO plays an important role of transparent conductive oxide (spacer layer) as well as the rectifying junction with silicon. By introducing the silver nanoislands on Al:ZnO, light harvesting has been enhanced because of plasmonic and light scattering effect. Morphology of Ag nanoparticles in consequence with the optical and electrical properties of the device has been studied. Optical reflection measurement of the device with Ag nanoisland shows remarkable improvement in both visible and UV regions compared to the bare n-Al:ZnO/p-Si heterostructure. Near band edge emission in photoluminescence has been enhanced with the deposition of Ag nanoislands. Dark and illumination current density has also been increased with the deposition of Ag nanoisland. Our experimental results suggest that integration of Ag nanoislands may help to improve the efficiency of hybrid silicon based photonic devices.

  3. Bose Condensation of Interwell Excitons in Double Quantum Wells

    DEFF Research Database (Denmark)

    Larionov, A. V.; Timofeev, V. B.; Ni, P. A.

    2002-01-01

    The luminescence of interwell excitons in double quantum wells GaAs/AlGaAs (n–i–n heterostructures) with large-scale fluctuations of random potential in the heteroboundary planes was studied. The properties of excitons whose photoexcited electron and hole are spatially separated in the neighboring...

  4. Influence of Coulomb screening on lateral lasing in VECSELs.

    Science.gov (United States)

    Wang, Chengao; Malloy, Kevin; Sheik-Bahae, Mansoor

    2015-12-14

    Parasitic lateral lasing in certain optically pumped semiconductor disc lasers drains the gain of the vertical mode and thus causes power scaling degradation and premature rollover in surface emitting operation. We have observed this effect in both multiple quantum wells (MQW) (GaInAs/GaAs) and double heterostructures (DHS) (GaInP/GaAs/GaInP) under pulsed excitation even when the gain chip lateral dimensions are much larger than the diameter of the pump laser. Lateral lasing occurs persistently between cleaved facets at a band-tail wavelength much longer than the peak of the gain. We show that the effect of bandgap renormalization due to Coulomb screening explains this phenomena. Exploiting the simple analytical plasma theory of bulk semiconductors (Banyai & Koch, 1986), we can account for such an effect in double heterostructures.

  5. Optical dynamics in low-dimensional semiconductor heterostructures. Quantum dots and quantum cascade lasers

    Energy Technology Data Exchange (ETDEWEB)

    Weber, Carsten

    2008-07-01

    This work is focused on the optical dynamics of mesoscopic semiconductor heterostructures, using as prototypes zero-dimensional quantum dots and quantum cascade lasers which consist of quasitwo- dimensional quantum wells. Within a density matrix theory, a microscopic many-particle theory is applied to study scattering effects in these structures: the coupling to external as well as local fields, electron-phonon coupling, coupling to impurities, and Coulomb coupling. For both systems, the investigated effects are compared to experimentally observed results obtained during the past years. In quantum dots, the three-dimensional spatial confinement leads to the necessity to consider a quantum kinetic description of the dynamics, resulting in non-Markovian electron-phonon effects. This can be seen in the spectral phonon sidebands due to interaction with acoustic phonons as well as a damping of nonlinear Rabi oscillations which shows a nonmonotonous intensity and pulse duration dependence. An analysis of the inclusion of the self-interaction of the quantum dot shows that no dynamical local field terms appear for the simple two-level model. Considering local fields which have their origin in many quantum dots, consequences for a two-level quantum dot such as a zero-phonon line broadening and an increasing signal in photon echo experiments are found. For the use of quantum dots in an optical spin control scheme, it is found that the dephasing due to the electron-phonon interaction can be dominant in certain regimes. Furthermore, soliton and breather solutions are studied analytically in nonlinear quantum dot ensembles. Generalizing to quasi-two-dimensional structures, the intersubband dynamics of quantum cascade laser structures is investigated. A dynamical theory is considered in which the temporal evolution of the subband populations and the current density as well as the influence of scattering effects is studied. In the nonlinear regime, the scattering dependence and

  6. Modular PbSrS/PbS mid-infrared vertical external cavity surface emitting laser on Si

    Science.gov (United States)

    Khiar, A.; Rahim, M.; Fill, M.; Felder, F.; Zogg, H.; Cao, D.; Kobayashi, S.; Yokoyama, T.; Ishida, A.

    2011-07-01

    A mid-infrared vertical external cavity surface emitting laser (VECSEL) based on undoped PbS is described herein. A 200 nm-thick PbS active layer embedded between PbSrS cladding layers forms a double heterostructure. The layers are grown on a lattice and thermal expansion mismatched Si-substrate. The substrate is placed onto a flat bottom Bragg mirror again grown on a Si substrate, and the VECSEL is completed with a curved top mirror. Pumping is done optically with a 1.55 μm laser diode. This leads to an extremely simple modular fabrication process. Lasing wavelengths range from 3-3.8 μm at 100-260 K heat sink temperature. The lowest threshold power is ˜210 mWp and highest output power is ˜250 mWp. The influence of the different recombination mechanism as well as free carrier absorption on the threshold power is modeled.

  7. Double fillet lap of laser welding of thin sheet AZ31B Mg alloy

    Science.gov (United States)

    Ishak, Mahadzir; Salleh, M. N. M.

    2018-05-01

    In this paper, we describe the experimental laser welding of thin sheet AZ31B using double fillet lap joint method. Laser welding is capable of producing high quality weld seams especially for small weld bead on thin sheet product. In this experiment, both edges for upper and lower sheets were subjected to the laser beam from the pulse wave (PW) mode of fiber laser. Welded sample were tested their joint strength by tensile-shear strength method and the fracture loads were studied. Strength for all welded samples were investigated and the effect of laser parameters on the joint strength and appearances were studied. Pulsed energy (EP) from laser process give higher effect on joint strength compared to the welding speed (WS) and angle of irradiation (AOI). Highest joint strength was possessed by sample with high EP with the same value of WS and AOI. The strength was low due to the crack defect at the centre of weld region.

  8. Intensity dependence of nonsequential double ionization of helium in IR+XUV two-color laser fields

    International Nuclear Information System (INIS)

    Jin, Facheng; Wang, Bingbing; Chen, Jing; Yang, Yujun; Yan, Zong-Chao

    2016-01-01

    By applying the frequency-domain theory, we investigate the dependence of momentum spectra on laser intensity in a nonsequential double ionization (NSDI) process of helium in infrared (IR) and extreme ultraviolet (XUV) two-color laser fields. We find that the two-color laser fields play distinct roles in an NSDI process, where the IR laser field mainly determines the width of each band, and the XUV laser field mainly plays a role on the NSDI probability. Furthermore, an NSDI process can be decoupled into a two-step process: an above-threshold ionization (ATI), followed by a laser-assisted collision (LAC). It is found that, the IR laser field is responsible for broadening the peak in the ATI process and providing additional momenta to the two ionized electrons in the LAC process; while the XUV laser field plays a crucial role on the strength of the spectrum in the ATI process, and influences the radii of orbits in momentum space in the LAC process. (paper)

  9. Fabrication and optimization of the copper halide Laser's comparison of the double-discharge (Cu Cl) with the single-pulse operation (Cu Br)

    International Nuclear Information System (INIS)

    Sajad, B.; Behrozinia, S.; Nikzad, P.; Bassam, M. A.

    2009-01-01

    In this paper, the fabrication of a double-pulse copper chloride laser was investigated to study the effect of various parameters such as buffer gas pressure, temperature, and the delay time between two electrical discharge pulses, on laser output power. Moreover, a single-pulse copper bromide laser was fabricated to optimize the laser output power versus temperature, buffer gas pressure, and electrical input power and discharge frequency. The comparison of the results in single-pulse and double-pulse excitation indicates that the former is easier in operation and more power stability can be achieved using single pulse excitation.

  10. Automatic alignment of double optical paths in excimer laser amplifier

    Science.gov (United States)

    Wang, Dahui; Zhao, Xueqing; Hua, Hengqi; Zhang, Yongsheng; Hu, Yun; Yi, Aiping; Zhao, Jun

    2013-05-01

    A kind of beam automatic alignment method used for double paths amplification in the electron pumped excimer laser system is demonstrated. In this way, the beams from the amplifiers can be transferred along the designated direction and accordingly irradiate on the target with high stabilization and accuracy. However, owing to nonexistence of natural alignment references in excimer laser amplifiers, two cross-hairs structure is used to align the beams. Here, one crosshair put into the input beam is regarded as the near-field reference while the other put into output beam is regarded as the far-field reference. The two cross-hairs are transmitted onto Charge Coupled Devices (CCD) by image-relaying structures separately. The errors between intersection points of two cross-talk images and centroid coordinates of actual beam are recorded automatically and sent to closed loop feedback control mechanism. Negative feedback keeps running until preset accuracy is reached. On the basis of above-mentioned design, the alignment optical path is built and the software is compiled, whereafter the experiment of double paths automatic alignment in electron pumped excimer laser amplifier is carried through. Meanwhile, the related influencing factors and the alignment precision are analyzed. Experimental results indicate that the alignment system can achieve the aiming direction of automatic aligning beams in short time. The analysis shows that the accuracy of alignment system is 0.63μrad and the beam maximum restoration error is 13.75μm. Furthermore, the bigger distance between the two cross-hairs, the higher precision of the system is. Therefore, the automatic alignment system has been used in angular multiplexing excimer Main Oscillation Power Amplification (MOPA) system and can satisfy the requirement of beam alignment precision on the whole.

  11. Fiber fuse behavior in kW-level continuous-wave double-clad field laser

    International Nuclear Information System (INIS)

    Sun Jun-Yi; Xiao Qi-Rong; Li Dan; Wang Xue-Jiao; Zhang Hai-Tao; Gong Ma-Li; Yan Ping

    2016-01-01

    In this study, original experimental data for fiber fuse in kW-level continuous-wave (CW) high power double-clad fiber (DCF) laser are reported. The propagating velocity of the fuse is 9.68 m/s in a 3.1-kW Yb-doped DCF laser. Three other cases in Yb-doped DCF are also observed. We think that the ignition of fiber fuse is caused by thermal mechanism, and the formation of bullet-shaped tracks is attributed to the optical discharge and temperature gradient. The inducements of initial fuse and formation of bullet-shaped voids are analyzed. This investigation of fiber fuse helps better understand the fiber fuse behavior, in order to avoid the catastrophic destruction caused by fiber fuse in high power fiber laser. (paper)

  12. Spectroscopic and shadowgraphic analysis of laser induced plasmas in the orthogonal double pulse pre-ablation configuration

    International Nuclear Information System (INIS)

    Cristoforetti, G.; Legnaioli, S.; Pardini, L.; Palleschi, V.; Salvetti, A.; Tognoni, E.

    2006-01-01

    This work focuses on the study of the plumes obtained in the double pulse orthogonal Laser Induced Breakdown Spectroscopy (LIBS) in the pre-ablation configuration using both spectroscopic and shadowgraphic approaches. Single and double pulse LIBS experiments were carried out on a brass sample in air. Both the distance of the air plasma from the target surface and the interpulse delay were varied (respectively in the range 0.1-4.2 mm and up to 50 μs) revealing a significant variation of the plasma emission and of the plume-shock wave dynamical expansion in different cases. The intensity of both atomic and ionized zinc lines was measured in all the cases, allowing the calculation of the spatially averaged temperature and electron density and an estimation of the ablated mass. The line intensities and the thermodynamic parameters obtained by the spectroscopic measurements were discussed bearing in mind the dynamical expansion characteristics obtained from the shadowgraphic approach. All the data seem to be consistent with the model previously proposed for the double pulse collinear configuration where the line enhancement is mainly attributed to the ambient gas rarefaction produced by the first laser pulse, which causes a less effective shielding of the second laser pulse

  13. FEM for modelling 193 nm excimer laser treatment of SiO{sub 2}/Si/Si{sub (1-x)}Ge{sub x} heterostructures on SOI substrates

    Energy Technology Data Exchange (ETDEWEB)

    Conde, J.C.; Chiussi, S.; Gontad, F.; Gonzalez, P. [Dpto. Fisica Aplicada, E.T.S.I.I. University of Vigo, Campus Universitario, Rua Maxwell s/n, 36310 Vigo (Spain); Martin, E. [Dpto. de Mecanica, Maquinas, Motores Termicos y Fluidos, E.T.S.I.I. University of Vigo, Campus Universitario, Rua Maxwell s/n, 36310 Vigo (Spain)

    2011-03-15

    Research on epitaxial crystalline silicon (c-Si) and silicon-germanium (Si{sub 1-x}Ge{sub x}) alloys growth and annealing for microelectronic purposes, such as Micro- or Nano-Electro-Mechanical Systems (MEMS or NEMS) and Silicon-On-Nothing (SON) devices is continuously in progress. Laser assisted annealing techniques using commercial ArF Excimer Laser sources are based on ultra-rapid heating and cooling cycles induced by the 193 nm pulses of 20 ns, which are absorbed in the near surface region of the heterostructures. During and after the absorption of these laser pulses, complex physical processes appear that strongly depend on sample structure and applied laser pulse energy densities. The control of the experimental parameters is therefore a key task for obtaining high quality alloys. The Finite ElementsMethod (FEM) is a powerful tool for the optimization of such treatments, because it provides the spatial and temporal temperature fields that are produced by the laser pulses. In this work, we have used a FEM commercial software, to predict the temperatures gradients induced by ArF excimer laser over a wide energy densities range, 0.1<{phi}<0.4 J/cm{sup 2}, on different SiO{sub 2}/Si/Si{sub (1-x)}Ge{sub (x)} thin films deposited on SOI substrate. These numerical results allow us to predict the threshold energies needed to reach the melting point (MP) of the Si and SiGe alloy without oxidation of the thin films system. Therefore, it is possible to optimize the conditions to achieve high quality epitaxy films. (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  14. Flexible heterostructures based on metal phthalocyanines thin films obtained by MAPLE

    International Nuclear Information System (INIS)

    Socol, M.; Preda, N.; Rasoga, O.; Breazu, C.; Stavarache, I.; Stanculescu, F.; Socol, G.; Gherendi, F.; Grumezescu, V.; Popescu-Pelin, G.; Girtan, M.; Stefan, N.

    2016-01-01

    Highlights: • Organic heterostructures prepared by MAPLE having a large absorbtion domain. • Photogeneration process is evidenced in the structure with ZnPc:TPyP mixed layer. • An increase in current value is observed in the structure with MgPc:TPyP mixed layer. - Abstract: Heterostructures based on zinc phthalocyanine (ZnPc), magnesium phthalocyanine (MgPc) and 5,10,15,20-tetra(4-pyrydil)21H,23H-porphine (TPyP) were deposited on ITO flexible substrates by Matrix Assisted Pulsed Laser Evaporation (MAPLE) technique. Organic heterostructures containing (TPyP/ZnPc(MgPc)) stacked or (ZnPc(MgPc):TPyP) mixed layers were characterized by X-ray diffraction-XRD, photoluminescence-PL, UV–vis and FTIR spectroscopy. No chemical decomposition of the initial materials was observed. The investigated structures present a large spectral absorption in the visible range making them suitable for organic photovoltaics applications (OPV). Scanning electron microscopy-SEM and atomic force microscopy-AFM revealed morphologies typical for the films prepared by MAPLE. The current–voltage characteristics of the investigated structures, measured in dark and under light, present an improvement in the current value (∼3 order of magnitude larger) for the structure based on the mixed layer (Al/MgPc:TPyP/ITO) in comparison with the stacked layer (Al/MgPc//TPyP/ITO). A photogeneration process was evidenced in the case of structures Al/ZnPc:TPyP/ITO with mixed layers.

  15. Flexible heterostructures based on metal phthalocyanines thin films obtained by MAPLE

    Energy Technology Data Exchange (ETDEWEB)

    Socol, M., E-mail: cela@infim.ro [National Institute of Material Physics, 105 bis Atomistilor Street, PO Box MG-7, 077125 Bucharest-Magurele (Romania); Preda, N.; Rasoga, O. [National Institute of Material Physics, 105 bis Atomistilor Street, PO Box MG-7, 077125 Bucharest-Magurele (Romania); Breazu, C. [National Institute of Material Physics, 105 bis Atomistilor Street, PO Box MG-7, 077125 Bucharest-Magurele (Romania); University of Bucharest, Faculty of Physics, 405 Atomistilor Street, PO Box MG-11, 077125 Bucharest-Magurele (Romania); Stavarache, I. [National Institute of Material Physics, 105 bis Atomistilor Street, PO Box MG-7, 077125 Bucharest-Magurele (Romania); Stanculescu, F. [University of Bucharest, Faculty of Physics, 405 Atomistilor Street, PO Box MG-11, 077125 Bucharest-Magurele (Romania); Socol, G.; Gherendi, F.; Grumezescu, V.; Popescu-Pelin, G. [National Institute for Lasers, Plasma and Radiation Physics, 409 Atomistilor Street, PO Box MG-36, 077125 Bucharest-Magurele (Romania); Girtan, M. [Laboratoire de Photonique d’Angers, Université d’Angers, 2, Bd. Lavoisier, 49045 Angers (France); Stefan, N. [National Institute for Lasers, Plasma and Radiation Physics, 409 Atomistilor Street, PO Box MG-36, 077125 Bucharest-Magurele (Romania)

    2016-06-30

    Highlights: • Organic heterostructures prepared by MAPLE having a large absorbtion domain. • Photogeneration process is evidenced in the structure with ZnPc:TPyP mixed layer. • An increase in current value is observed in the structure with MgPc:TPyP mixed layer. - Abstract: Heterostructures based on zinc phthalocyanine (ZnPc), magnesium phthalocyanine (MgPc) and 5,10,15,20-tetra(4-pyrydil)21H,23H-porphine (TPyP) were deposited on ITO flexible substrates by Matrix Assisted Pulsed Laser Evaporation (MAPLE) technique. Organic heterostructures containing (TPyP/ZnPc(MgPc)) stacked or (ZnPc(MgPc):TPyP) mixed layers were characterized by X-ray diffraction-XRD, photoluminescence-PL, UV–vis and FTIR spectroscopy. No chemical decomposition of the initial materials was observed. The investigated structures present a large spectral absorption in the visible range making them suitable for organic photovoltaics applications (OPV). Scanning electron microscopy-SEM and atomic force microscopy-AFM revealed morphologies typical for the films prepared by MAPLE. The current–voltage characteristics of the investigated structures, measured in dark and under light, present an improvement in the current value (∼3 order of magnitude larger) for the structure based on the mixed layer (Al/MgPc:TPyP/ITO) in comparison with the stacked layer (Al/MgPc//TPyP/ITO). A photogeneration process was evidenced in the case of structures Al/ZnPc:TPyP/ITO with mixed layers.

  16. A time-dependent B-spline R-matrix approach to double ionization of atoms by XUV laser pulses

    Energy Technology Data Exchange (ETDEWEB)

    Guan Xiaoxu; Zatsarinny, O; Noble, C J; Bartschat, K [Department of Physics and Astronomy, Drake University, Des Moines, IA 50311 (United States); Schneider, B I [Physics Division, National Science Foundation, Arlington, Virgina 22230 (United States)], E-mail: xiaoxu.guan@drake.edu, E-mail: oleg.zatsarinny@drake.edu, E-mail: cjn@maxnet.co.nz, E-mail: klaus.bartschat@drake.edu, E-mail: bschneid@nsf.gov

    2009-07-14

    We present an ab initio and non-perturbative time-dependent approach to the problem of double ionization of a general atom driven by intense XUV laser pulses. After using a highly flexible B-spline R-matrix method to generate field-free Hamiltonian and electric dipole matrices, the initial state is propagated in time using an efficient Arnoldi-Lanczos scheme. Test calculations for double ionization of He by a single laser pulse yield good agreement with benchmark results obtained with other methods. The method is then applied to two-colour pump-probe processes, for which momentum and energy distributions of the two outgoing electrons are presented.

  17. Vertical-Cavity In-plane Heterostructures: Physics and Applications

    DEFF Research Database (Denmark)

    Taghizadeh, Alireza; Mørk, Jesper; Chung, Il-Sug

    2015-01-01

    We show that the in-plane heterostructures realized in vertical cavities with high contrast grating(HCG) reflector enables exotic configurations of heterostructure and photonic wells. In photonic crystal heterostructures forming a photonic well, the property of a confined mode is determined...... by the well width and barrier height. We show that in vertical-cavity in-plane heterostructures, anisotropic dispersion curvatures plays a key role as well, leading to exotic effects such as a photonic well with conduction band like well and a valence band like barrier. We investigate three examples...

  18. Investigation of the compositional depth profile in epitaxial submicrometer layers of AIIIBV heterostructures

    International Nuclear Information System (INIS)

    Baumbach, T.; Bruehl, H.G.; Rhan, H.; Pietsch, U.

    1988-01-01

    The compositional depth profile in semiconductor heterostructures can be determined from X-ray diffraction patterns. Different grading profiles were studied through theoretical simulations with regard to their features in the rocking curve. It was found that the thickness and the grading of a particular layer cannot be determined independently of each other. A linear grading gives rise to an increased peak width of the layer diffraction peak whereas an exponential grading can be detected from the damping of high-order interference fringes. The exponential model can be applied to determine the abruptness of the heterointerfaces. The proposed evaluation method of experimental rocking curves includes the case of overlapping peaks of the layer and the substrate diffraction. The simulation results are discussed for a GaAs/Ga 1-x Al x As/GaAs[100] double heterostructure. When the experimental resolution is taken into account, the sensitivity of the interface width determination was 100-200 A. (orig.)

  19. Heterostructures and quantum devices

    CERN Document Server

    Einspruch, Norman G

    1994-01-01

    Heterostructure and quantum-mechanical devices promise significant improvement in the performance of electronic and optoelectronic integrated circuits (ICs). Though these devices are the subject of a vigorous research effort, the current literature is often either highly technical or narrowly focused. This book presents heterostructure and quantum devices to the nonspecialist, especially electrical engineers working with high-performance semiconductor devices. It focuses on a broad base of technical applications using semiconductor physics theory to develop the next generation of electrical en

  20. Pulse radiolysis based on a femtosecond electron beam and a femtosecond laser light with double-pulse injection technique

    International Nuclear Information System (INIS)

    Yang Jinfeng; Kondoh, Takafumi; Kozawa, Takahiro; Yoshida, Youichi; Tagawa, Seiichi

    2006-01-01

    A new pulse radiolysis system based on a femtosecond electron beam and a femtosecond laser light with oblique double-pulse injection was developed for studying ultrafast chemical kinetics and primary processes of radiation chemistry. The time resolution of 5.2 ps was obtained by measuring transient absorption kinetics of hydrated electrons in water. The optical density of hydrated electrons was measured as a function of the electron charge. The data indicate that the double-laser-pulse injection technique was a powerful tool for observing the transient absorptions with a good signal to noise ratio in pulse radiolysis

  1. Layered double hydroxides/polymer thin films grown by matrix assisted pulsed laser evaporation

    Energy Technology Data Exchange (ETDEWEB)

    Birjega, R.; Matei, A.; Mitu, B.; Ionita, M.D.; Filipescu, M.; Stokker-Cheregi, F.; Luculescu, C.; Dinescu, M. [National Institute for Lasers, Plasma and Radiation Physics, 409 Atomistilor Str., 77125 Bucharest–Magurele (Romania); Zavoianu, R.; Pavel, O.D. [University of Bucharest, Faculty of Chemistry, Department of Chemical Technology and Catalysis, 4-12 Regina Elisabeta Bd., Bucharest (Romania); Corobea, M.C. [National R. and S. Institute for Chemistry and Petrochemistry, ICECHIM, 202 Splaiul Independentei Str., CP-35-274, 060021, Bucharest (Romania)

    2013-09-30

    Due to their highly tunable properties, layered double hydroxides (LDHs) are an emerging class of the favorably layered crystals used for the preparation of multifunctional polymer/layered crystal nanocomposites. In contrast to cationic clay materials with negatively charge layers, LDHs are the only host lattices with positively charged layers (brucite-like), with interlayer exchangeable anions and intercalated water. In this work, the deposition of thin films of Mg and Al based LDH/polymers nanocomposites by laser techniques is reported. Matrix assisted pulsed laser evaporation was the method used for thin films deposition. The Mg–Al LDHs capability to act as a host for polymers and to produce hybrid LDH/polymer films has been investigated. Polyethylene glycol with different molecular mass compositions and ethylene glycol were used as polymers. The structure and surface morphology of the deposited LDH/polymers films were examined by X-ray diffraction, Fourier transform infra-red spectroscopy, atomic force microscopy and scanning electron microscopy. - Highlights: • Hybrid composites deposited by matrix assisted pulsed laser evaporation (MAPLE). • Mg–Al layered double hydroxides (LDH) and polyethylene glycol (PEG) are used. • Mixtures of PEG1450 and LDH were deposited by MAPLE. • Deposited thin films preserve the properties of the starting material. • The film wettability can be controlled by the amount of PEG.

  2. Widely-duration-tunable nanosecond pulse Nd:YVO4 laser based on double Pockels cells

    Science.gov (United States)

    He, Li-Jiao; Liu, Ke; Bo, Yong; Wang, Xiao-Jun; Yang, Jing; Liu, Zhao; Zong, Qing-Shuang; Peng, Qin-Jun; Cui, Da-Fu; Xu, Zu-Yan

    2018-05-01

    The development of duration-tunable pulse lasers with constant output power is important for scientific research and materials processing. We present a widely-duration-tunable nanosecond (ns) pulse Nd:YVO4 laser based on double Pockels cells (PCs), i.e. inserting an extra PC into a conventional electro-optic Q-switched cavity dumped laser resonator. Under the absorbed pump power of 24.9 W, the pulse duration is adjustable from 31.9 ns to 5.9 ns by changing the amplitude of the high voltage on the inserted PC from 1100 V to 4400 V at the pulse repetition rate of 10 kHz. The corresponding average output power is almost entirely maintained in the range of 3.5–4.1 W. This represents more than three times increase in pulse duration tunable regime and average power compared to previously reported results for duration-tunable ns lasers. The laser beam quality factor was measured to be M 2  <  1.18.

  3. Experimental observation of parametric effects near period doubling in a loss-modulated CO2 laser

    OpenAIRE

    Chizhevsky, V. N.

    1996-01-01

    A number of parametric effects, such as suppression of period doubling, shift of the bifurcation point, scaling law relating the shift and the perturbation amplitude, influence of the detuning on the suppression, reaching of the maximum gain between the original and shifted bifurcation points, and scaling law for idler power are experimentally observed near period doubling bifurcation in a loss-driven CO2 laser that is subjected to periodic loss perturbations at a frequency that is close to a...

  4. Performance of a CW double electric discharge for supersonic CO lasers

    Science.gov (United States)

    Stanton, A. C.; Hanson, R. K.; Mitchner, M.

    1980-01-01

    The results of an experimental investigation of a CW double discharge in supersonic CO mixtures are reported. Stable discharges in CO/N2 and CO/Ar mixtures, with a maximum energy loading of 0.5 eV/CO molecule, were achieved in a small-scale continuous-flow supersonic channel. Detailed measurements of the discharge characteristics were performed, including electrostatic probe measurements of floating potential and electron number density and spectroscopic measurements of the CO vibrational population distributions. The results of these measurements indicate that the vibrational excitation efficiency of the discharge is approximately 60%, for moderate levels of main discharge current. These experiments, on a small scale, demonstrate that the double-discharge scheme provides adequate vibrational energy loading for efficient CO laser operation under CW supersonic flow conditions.

  5. Enhanced optical nonlinearities in the near-infrared using III-nitride heterostructures coupled to metamaterials

    International Nuclear Information System (INIS)

    Wolf, Omri; Ma, Xuedan; Brener, Igal; Allerman, Andrew A.; Wendt, Joel R.; Shaner, Eric A.; Song, Alex Y.

    2015-01-01

    We use planar metamaterial resonators to enhance by more than two orders of magnitude the near infrared second harmonic generation obtained from intersubband transitions in III-Nitride heterostructures. The improvement arises from two factors: employing an asymmetric double quantum well design and aligning the resonators' cross-polarized resonances with the intersubband transition energies. The resulting nonlinear metamaterial operates at wavelengths where single photon detection is available, and represents a different class of sources for quantum photonics related phenomena

  6. MAPLE prepared heterostructures with oligoazomethine: Fullerene derivative mixed layer for photovoltaic applications

    Science.gov (United States)

    Stanculescu, A.; Rasoga, O.; Socol, M.; Vacareanu, L.; Grigoras, M.; Socol, G.; Stanculescu, F.; Breazu, C.; Matei, E.; Preda, N.; Girtan, M.

    2017-09-01

    Mixed layers of azomethine oligomers containing 2,5-diamino-3,4-dicyanothiophene as central unit and triphenylamine (LV5) or carbazol (LV4) at both ends as donor and fullerene derivative, [6,6]-phenyl-C61 butyric acid butyl ester ([C60]PCB-C4) as acceptor, have been prepared by Matrix Assisted Pulsed Laser Evaporation (MAPLE) on glass/ITO and Si substrates. The effect of weight ratio between donor and acceptor (1:1; 1:2) and solvent type (chloroform, dimethylsulphoxide) on the optical (UV-vis transmission/absorption, photoluminescence) and morphological properties of LV4 (LV5): [C60]PCB-C4 mixed layers has been evidenced. Dark and under illumination I-V characteristics of the heterostructures realized with these mixed layers sandwiched between ITO and Al electrodes have revealed a solar cell behavior for the heterostructures prepared with both LV4 and LV5 using chloroform as matrix solvent. The solar cell structure realized with oligomer LV5, glass/ITO/LV5: [C60]PCB-C4 (1:1) has shown the best parameters.

  7. Laser-assisted patterning of double-sided adhesive tapes for optofluidic chip integration

    Science.gov (United States)

    Zamora, Vanessa; Janeczka, Christian; Arndt-Staufenbiel, Norbert; Havlik, George; Queisser, Marco; Schröder, Henning

    2018-02-01

    Portable high-sensitivity biosensors exhibit a growing demand in healthcare, food industry and environmental monitoring sectors. Optical biosensors based on photonic integration platforms are attractive candidates due to their high sensitivity, compactness and multiplexing capabilities. However, they need a low-cost and reliable integration with the microfluidic system. Laser-micropatterned double-sided biocompatible adhesive tapes are promising bonding layers for hybrid integration of an optofluidic biochip. As a part of the EU-PHOCNOSIS project, double-sided adhesive tapes have been proposed to integrate the polymer microfluidic system with the optical integrated waveguide sensor chip. Here the adhesive tape should be patterned in a micrometer scale in order to create an interaction between the sample that flows through the polymer microchannel and the photonic sensing microstructure. Three laser-assisted structuring methods are investigated to transfer microchannel patterns to the adhesive tape. The test structure design consists of a single channel with 400 μm wide, 30 mm length and two circular receivers with 3 mm radius. The best structuring results are found by using the picosecond UV laser where smooth and straight channel cross-sections are obtained. Such patterned tapes are used to bond blank polymer substrates to blank silicon substrates. As a proof of concept, the hybrid integration is tested using colored DI-water. Structuring tests related to the reduction of channel widths are also considered in this work. The use of this technique enables a simple and rapid manufacturing of narrow channels (50-60 μm in width) in adhesive tapes, achieving a cheap and stable integration of the optofluidic biochip.

  8. GaAsSb/InGaAs type-II quantum wells for long-wavelength lasers on GaAs substrates

    International Nuclear Information System (INIS)

    Klem, J. F.; Blum, O.; Kurtz, S. R.; Fritz, I. J.; Choquette, K. D.

    2000-01-01

    We have investigated the properties of GaAsSb/InGaAs type-II bilayer quantum-well structures grown by molecular-beam epitaxy for use in long-wavelength lasers on GaAs substrates. Structures with layer strains and thicknesses designed to be thermodynamically stable against dislocation formation exhibit room-temperature photoluminescence at wavelengths as long as 1.43 μm. The photoluminescence emission wavelength is significantly affected by growth temperature and the sequence of layer growth (InGaAs/GaAsSb versus GaAsSb/InGaAs), suggesting that Sb and/or In segregation results in nonideal interfaces under certain growth conditions. At low-injection currents, double-heterostructure lasers with GaAsSb/InGaAs bilayer quantum-well active regions display electroluminescence at wavelengths comparable to those obtained in photoluminescence, but at higher currents the electroluminescence shifts to shorter wavelengths. Lasers have been obtained with threshold current densities of 120 A/cm2 at 1.17 μm, and 2.1 kA/cm2 at 1.21 μm. (c) 2000 American Vacuum Society

  9. In-plane heterostructures of Sb/Bi with high carrier mobility

    Science.gov (United States)

    Zhao, Pei; Wei, Wei; Sun, Qilong; Yu, Lin; Huang, Baibiao; Dai, Ying

    2017-06-01

    In-plane two-dimensional (2D) heterostructures have been attracting public attention due to their distinctive properties. However, the pristine materials that can form in-plane heterostructures are reported only for graphene, hexagonal BN, transition-metal dichalcogenides. It will be of great significance to explore more suitable 2D materials for constructing such ingenious heterostructures. Here, we demonstrate two types of novel seamless in-plane heterostructures combined by pristine Sb and Bi monolayers by means of first-principle approach based on density functional theory. Our results indicate that external strain can serve as an effective strategy for bandgap engineering, and the transition from semiconductor to metal occurs when a compressive strain of -8% is applied. In addition, the designed heterostructures possess direct band gaps with high carrier mobility (˜4000 cm2 V-1 s-1). And the mobility of electrons and holes have huge disparity along the direction perpendicular to the interface of Sb/Bi in-plane heterostructures. It is favorable for carriers to separate spatially. Finally, we find that the band edge positions of Sb/Bi in-plane heterostructures can meet the reduction potential of hydrogen generation in photocatalysis. Our results not only offer alternative materials to construct versatile in-plane heterostructures, but also highlight the applications of 2D in-plane heterostructures in diverse nanodevices and photocatalysis.

  10. Paired modes of heterostructure cavities in photonic crystal waveguides with split band edges

    DEFF Research Database (Denmark)

    Mahmoodian, Sahand; Sukhorukov, Andrey A.; Ha, Sangwoo

    2010-01-01

    We investigate the modes of double heterostructure cavities where the underlying photonic crystal waveguide has been dispersion engineered to have two band-edges inside the Brillouin zone. By deriving and using a perturbative method, we show that these structures possess two modes. For unapodized...... cavities, the relative detuning of the two modes can be controlled by changing the cavity length, and for particular lengths, a resonant-like effect makes the modes degenerate. For apodized cavities no such resonances exist and the modes are always non-degenerate....

  11. The electric field manipulation of magnetization in La{sub 1−x}Sr{sub x}CoO{sub 3}/Pb(Mg{sub 1/3}Nb{sub 2/3})O{sub 3}-PbTiO{sub 3} heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Q. M.; Li, Q.; Zhou, W. P.; Wang, L. Y.; Yang, Y. T.; Wang, D. H., E-mail: wangdh@nju.edu.cn; Lv, L. Y.; Du, Y. W. [Jiangsu Key Laboratory for Nano Technology and National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093 (China); Gao, R. L. [School of Metallurgy and Materials Engineering, Chongqing University of Science and Technology, Chongqing 401331 (China)

    2014-04-07

    La{sub 1−x}Sr{sub x}CoO{sub 3} (x = 0.18, 0.33, and 0.5) films were grown epitaxially on piezoelectric Pb(Mg{sub 1/3}Nb{sub 2/3})O{sub 3}-PbTiO{sub 3} substrates by pulsed laser deposition. The magnetization of these films varies with the external electric field, showing the magnetoelectric effect. With different doping content of Sr{sup 2+} ions, the change of magnetization for these films show different behaviors with increasing temperature, which can be attributed to the competition between electric-field-induced changes of spin state and double exchange interaction. This work presents an alternative mechanism to investigate the electric field control of magnetism in magnetoelectric heterostructure by tuning the spin state.

  12. Heterostructures based on inorganic and organic van der Waals systems

    International Nuclear Information System (INIS)

    Lee, Gwan-Hyoung; Lee, Chul-Ho; Zande, Arend M. van der; Han, Minyong; Cui, Xu; Arefe, Ghidewon; Hone, James; Nuckolls, Colin; Heinz, Tony F.; Kim, Philip

    2014-01-01

    The two-dimensional limit of layered materials has recently been realized through the use of van der Waals (vdW) heterostructures composed of weakly interacting layers. In this paper, we describe two different classes of vdW heterostructures: inorganic vdW heterostructures prepared by co-lamination and restacking; and organic-inorganic hetero-epitaxy created by physical vapor deposition of organic molecule crystals on an inorganic vdW substrate. Both types of heterostructures exhibit atomically clean vdW interfaces. Employing such vdW heterostructures, we have demonstrated various novel devices, including graphene/hexagonal boron nitride (hBN) and MoS 2 heterostructures for memory devices; graphene/MoS 2 /WSe 2 /graphene vertical p-n junctions for photovoltaic devices, and organic crystals on hBN with graphene electrodes for high-performance transistors

  13. Generation of crystal-structure transverse patterns via a self-frequency-doubling laser.

    Science.gov (United States)

    Yu, Haohai; Zhang, Huaijin; Wang, Yicheng; Wang, Zhengping; Wang, Jiyang; Petrov, V

    2013-01-01

    Two-dimensional (2D) visible crystal-structure patterns analogous to the quantum harmonic oscillator (QHO) have been experimentally observed in the near- and far-fields of a self-frequency-doubling (SFD) microchip laser. Different with the fundamental modes, the localization of the SFD light is changed with the propagation. Calculation based on Hermite-Gaussian (HG) functions and second harmonic generation theory reproduces well the patterns both in the near- and far-field which correspond to the intensity distribution in coordinate and momentum spaces, respectively. Considering the analogy of wave functions of the transverse HG mode and 2D harmonic oscillator, we propose that the simple monolithic SFD lasers can be used for developing of new materials and devices and testing 2D quantum mechanical theories.

  14. Ge/Si core/multi shell heterostructure FETs

    Energy Technology Data Exchange (ETDEWEB)

    Picraux, Samuel T [Los Alamos National Laboratory; Dayeh, Shadi A [Los Alamos National Laboratory

    2010-01-01

    Concentric heterostructured materials provide numerous design opportunities for engineering strain and interfaces, as well as tailoring energy band-edge combinations for optimal device performance. Key to the realization of such novel device concepts is the complete understanding and full control over their growth, crystal structure, and hetero-epitaxy. We report here on a new route for synthesizing Ge/Si core/multi-shell heterostructure nanowires that eliminate Au seed diffusion on the nanowire sidewalls by engineering the interface energy density difference. We show that such control over core/shell synthesis enable experimental realization of heterostructure FET devices beyond those available in the literature with enhanced transport characteristics. We provide a side-by-side comparison on the transport properties of Ge/Si core/multi-shell nanowires grown with and without Au diffusion and demonstrate heterostructure FETs with drive currents that are {approx} 2X higher than record results for p-type FETs.

  15. 2D Vertical Heterostructures for Novel Tunneling Device Applications

    Science.gov (United States)

    2017-03-01

    2D Vertical Heterostructures for Novel Tunneling Device Applications Philip M. Campbell, Christopher J. Perini, W. Jud Ready, and Eric M. Vogel...School of Materials Science and Engineering Georgia Institute of Technology Atlanta, GA, USA 30332 Abstract: Vertical heterostructures...digital logic, signal processing, analog-to-digital conversion, and high-frequency communications, vertical heterostructure tunneling devices have

  16. Impact of ultrafast demagnetization process on magnetization reversal in L10 FePt revealed using double laser pulse excitation

    Science.gov (United States)

    Shi, J. Y.; Tang, M.; Zhang, Z.; Ma, L.; Sun, L.; Zhou, C.; Hu, X. F.; Zheng, Z.; Shen, L. Q.; Zhou, S. M.; Wu, Y. Z.; Chen, L. Y.; Zhao, H. B.

    2018-02-01

    Ultrafast laser induced magnetization reversal in L10 FePt films with high perpendicular magnetic anisotropy was investigated using single- and double-pulse excitations. Single-pulse excitation beyond 10 mJ cm-2 caused magnetization (M) reversal at the applied fields much smaller than the static coercivity of the films. For double-pulse excitation, both coercivity reduction and reversal percentage showed a rapid and large decrease with the increasing time interval (Δt) of the two pulses in the range of 0-2 ps. In this Δt range, the maximum demagnetization (ΔMp) was also strongly attenuated, whereas the integrated demagnetization signals over more than 10 ps, corresponding to the average lattice heat effect, showed little change. These results indicate that laser induced M reversal in FePt films critically relies on ΔMp. Because ΔMp is determined by spin temperature, which is higher than lattice temperature, utilizing an ultrafast laser instead of a continuous-wave laser in laser-assisted M reversal may reduce the overall deposited energy and increase the speed of recording. The effective control of M reversal by slightly tuning the time delay of two laser pulses may also be useful for ultrafast spin manipulation.

  17. Towards non-sequential double ionization of Ne and Ar using a femtosecond laser oscillator.

    Science.gov (United States)

    Liu, Yunquan; Tschuch, Sebastian; Dürr, Martin; Rudenko, Artem; Moshammer, Robert; Ullrich, Joachim; Siegel, Martin; Morgner, Uwe

    2007-12-24

    We report on first proof-of-principles results on non-sequential double ionization of argon and neon achieved by using a newly developed long-cavity Ti:sapphire femtosecond oscillator with a pulse duration of 45 fs and a repetition of 6.2 MHz combined with a dedicated reaction microscope. Under optimized experimental conditions, peak intensities larger than 2.310(14) W/cm(2) have been achieved. Ion momentum distributions were recorded for both rare gases and show significantly different features for single as well as for double ionization. For single ionization of neon a spike of zero-momentum electrons is found when decreasing the laser intensity towards the lowest ionization rate we can measure which is attributed to a non-resonant ionization channel. As to double ionization, the longitudinal momentum distribution for Ne(2+) displays a clear double-hump structure whereas this feature is found to be smoothened out with a maximum at zero momentum for Ar(2+).

  18. Assessment of effect of Yb3+ ion pairs on a highly Yb-doped double-clad fibre laser

    Science.gov (United States)

    Vallés, J. A.; Martín, J. C.; Berdejo, V.; Cases, R.; Álvarez, J. M.; Rebolledo, M. Á.

    2018-03-01

    Using a previously validated characterization method based on the careful measurement of the characteristic parameters and fluorescence emission spectra of a highly Yb-doped double-clad fibre, we evaluate the contribution of ion pair induced processes to the output power of a double-clad Yb-doped fibre ring laser. This contribution is proved to be insignificant, contrary to analysis by other authors, who overestimate the role of ion pairs.

  19. Watt-level passively Q-switched double-cladding fiber laser based on graphene oxide saturable absorber.

    Science.gov (United States)

    Yu, Zhenhua; Song, Yanrong; Dong, Xinzheng; Li, Yanlin; Tian, Jinrong; Wang, Yonggang

    2013-10-10

    A watt-level passively Q-switched ytterbium-doped double-cladding fiber laser with a graphene oxide (GO) absorber was demonstrated. The structure of the GO saturable absorber mirror (GO-SAM) was of the sandwich type. A maximum output power of 1.8 W was obtained around a wavelength of 1044 nm. To the best of our knowledge, this is the highest output power in Q-switched fiber lasers based on a GO saturable absorber. The pure GO was protected from the oxygen in the air so that the damage threshold of the GO-SAM was effectively raised. The gain fiber was a D-shaped ytterbium-doped double-cladding fiber. The pulse repetition rates were tuned from 120 to 215 kHz with pump powers from 3.89 to 7.8 W. The maximum pulse energy was 8.37 μJ at a pulse width of 1.7 μs.

  20. Atomic Scale Chemical and Structural Characterization of Ceramic Oxide Heterostructure Interfaces

    Energy Technology Data Exchange (ETDEWEB)

    Singh, R. K.

    2003-04-16

    The research plan was divided into three tasks: (a) growth of oxide heterostructures for interface engineering using standard thin film deposition techniques, (b) atomic level characterization of oxide heterostructure using such techniques as STEM-2 combined with AFM/STM and conventional high-resolution microscopy (HRTEM), and (c) property measurements of aspects important to oxide heterostructures using standard characterization methods, including dielectric properties and dynamic cathodoluminescence measurements. Each of these topics were further classified on the basis of type of oxide heterostructure. Type I oxide heterostructures consisted of active dielectric layers, including the materials Ba{sub x}Sr{sub 1-x}TiO{sub 3} (BST), Y{sub 2}O{sub 3} and ZrO{sub 2}. Type II heterostructures consisted of ferroelectric active layers such as lanthanum manganate and Type III heterostructures consist of phosphor oxide active layers such as Eu-doped Y{sub 2}O{sub 3}.

  1. Processing Interband Cascade Laser for High Temperature CW Operation

    National Research Council Canada - National Science Library

    Tober, Richard

    2004-01-01

    A narrow ridge-waveguide mid-IR interband cascade laser based on Type-II InAs/GaInSh heterostructures processed with a thick gold heat spreading layer operated CW at temperatures ranging from 80 K to 214.4 K...

  2. Photopatterning of heterostructured polymer Langmuir-Blodgett films

    International Nuclear Information System (INIS)

    Li Tiesheng; Mitsuishi, Masaya; Miyashita, Tokuji

    2008-01-01

    Heterostructured polymer Langmuir-Blodgett (LB) film prepared by using poly(N-dodecylacrylamide-co-t-butyl 4-vinylphenyl carbonate) (p(DDA-tBVPC53)) and poly(N-neopentyl methacrylamide-co-9-anthrylmethyl methacrylate) (p(nPMA-AMMA10)) polymer LB films which can act as photogenerator layers were investigated. Patterns with a resolution of 0.75 μm were obtained on heterostructured polymer LB films composed of 4 layers of p(nPMA-AMMA10) LB film (top layers) and 40 layers of p(DDA-tBVPC53) LB film (under layers) on a silicon wafer by deep UV irradiation followed by development with 1% tetramethylammonium hydroxide aqueous solution. The sensitivity of the heterostructured polymer LB films was improved without loss of the resolution compared with p(DDA-tBVPC53) LB film. The etch resistance of the heterostructured polymer LB films was sufficiently good to allow patterning of a copper film suitable for photomask fabrication

  3. "Common" lead isotopic measurements in silicate glasses and minerals by laser ablation double-focusing SC-ICPMS (2017)

    Data.gov (United States)

    Department of the Interior — This dataset is related to a 2017 journal article by A. J. Pietruszka and L. A. Neymark titled "Evaluation of laser ablation double-focusing SC-ICPMS for “common”...

  4. Hohlraum-driven mid-Z (SiO2) double-shell implosions on the omega laser facility and their scaling to NIF.

    Science.gov (United States)

    Robey, H F; Amendt, P A; Milovich, J L; Park, H-S; Hamza, A V; Bono, M J

    2009-10-02

    High-convergence, hohlraum-driven implosions of double-shell capsules using mid-Z (SiO2) inner shells have been performed on the OMEGA laser facility [T. R. Boehly, Opt. Commun. 133, 495 (1997)]. These experiments provide an essential extension of the results of previous low-Z (CH) double-shell implosions [P. A. Amendt, Phys. Rev. Lett. 94, 065004 (2005)] to materials of higher density and atomic number. Analytic modeling, supported by highly resolved 2D numerical simulations, is used to account for the yield degradation due to interfacial atomic mixing. This extended experimental database from OMEGA enables a validation of the mix model, and provides a means for quantitatively assessing the prospects for high-Z double-shell implosions on the National Ignition Facility [Paisner, Laser Focus World 30, 75 (1994)].

  5. A review of nano-optics in metamaterial hybrid heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Singh, Mahi R. [Department of Physics and Astronomy, Western University, London N6G 3K7 (Canada)

    2014-03-31

    We present a review for the nonlinear nano-optics in quantum dots doped in a metamaterial heterostructure. The heterostructure is formed by depositing a metamaterial on a dielectric substrate and ensemble of noninteracting quantum dots are doped near the heterostructure interface. It is shown that there is enhancement of the second harmonic generation due to the surface plasmon polaritons field present at the interface.

  6. Phase Diagram of the Bose Condensation of Interwell Excitons in GaAs/AlGaAs Double Quantum Wells

    DEFF Research Database (Denmark)

    Dremin, A. A.; Timofeev, V. B.; Larionov, A. V.

    2002-01-01

    The luminescence of interwell excitons in GaAs/AlGaAs double quantum wells (n–i–n heterostructures) with large-scale fluctuations of random potential in the heteroboundary planes was studied at low temperatures down to 0.5 K. The properties of excitons whose photoexcited electron and hole...... was coated with a metal mask containing special openings (windows) of a micron size or smaller. Both photoexcitation and observation of luminescence were performed through these windows by the fiber optic technique. At low pumping powers, the interwell excitons were strongly localized because of the residual...... charged impurities, and the corresponding photoluminescence line was nonuniformly broadened. As the laser excitation power increased, a narrow line due to delocalized excitons arose in a threshold-like manner, after which its intensity rapidly increased with growing pumping and the line itself narrowed...

  7. Watt-level ~2 μm laser output in Tm3+-doped tungsten tellurite glass double-cladding fiber.

    Science.gov (United States)

    Li, Kefeng; Zhang, Guang; Hu, Lili

    2010-12-15

    We report, for the first time to the best of our knowledge, a watt level cw fiber laser at ~2 μm from a piece of 40-cm-long newly developed highly thulium-doped (3.76 × 10(20) ions/cm(3)) tungsten tellurite glass double cladding fiber pumped by a commercial 800 nm laser diode. The maximum output power of the fiber laser reaches 1.12 W. The slope efficiency and the optical-optical efficiency with respect to the absorbed pump are 20% and 16%, respectively. The lasing threshold is 1.46 W, and the lasing wavelength is centered at 1937 nm.

  8. Continuous-wave laser at 440 nm based on frequency-doubled diode-pumped Nd:GdVO(4) crystal.

    Science.gov (United States)

    Castaing, Marc; Balembois, François; Georges, Patrick

    2008-09-01

    We present for the first time, to the best of our knowledge, a frequency-doubled Nd:GdVO(4) laser operating in a cw on the pure three-level laser line at 880 nm. We obtained 300 mW at 440 nm for 23 W of incident pump power at 808 nm. Moreover, with a 25% output coupler we obtained a cw power of 1.9 W at the fundamental wavelength at 880 nm.

  9. Controlling nonsequential double ionization of Ne with parallel-polarized two-color laser pulses.

    Science.gov (United States)

    Luo, Siqiang; Ma, Xiaomeng; Xie, Hui; Li, Min; Zhou, Yueming; Cao, Wei; Lu, Peixiang

    2018-05-14

    We measure the recoil-ion momentum distributions from nonsequential double ionization of Ne by two-color laser pulses consisting of a strong 800-nm field and a weak 400-nm field with parallel polarizations. The ion momentum spectra show pronounced asymmetries in the emission direction, which depend sensitively on the relative phase of the two-color components. Moreover, the peak of the doubly charged ion momentum distribution shifts gradually with the relative phase. The shifted range is much larger than the maximal vector potential of the 400-nm laser field. Those features are well recaptured by a semiclassical model. Through analyzing the correlated electron dynamics, we found that the energy sharing between the two electrons is extremely unequal at the instant of recollison. We further show that the shift of the ion momentum corresponds to the change of the recollision time in the two-color laser field. By tuning the relative phase of the two-color components, the recollision time is controlled with attosecond precision.

  10. Relationship of light-output nonlinearities and light-output spikes in proton-bombarded stripe-geometry double-heterostructure (Al,Ga)As lasers

    International Nuclear Information System (INIS)

    Dixon, R.W.; Joyce, W.B.; Miller, R.C.

    1979-01-01

    By using a fast photodetector and a simple spatial filtering technique, the relationship between the optical spike which frequently appears at the leading edge of a pulsed-GaAs-laser response and the optical nonlinearities called kinks has been investigated. It is suggested that the spike can be viewed consistently as a transition period during which the lasing mode distortion, which has been previously associated with kinks, occurs. It is the time taken for the kink to become established. During the spike, light emisson occurs with a spatial and angular intensity distribution consistent with the lasing which would be appropriate if the kink did not exist. It is shown that the experimental technique can also be used to investigate sustained laser optical-intensity oscillations

  11. Fabrication of colloidal crystal heterostructures by a room temperature floating self-assembly method

    International Nuclear Information System (INIS)

    Wang Aijun; Chen Shengli; Dong Peng

    2011-01-01

    Highlights: → Opal colloidal crystal heterostructure of several square centimeters in area was fabricated within only tens of minutes. → A fabricated colloidal crystal heterostructure was composed of a PS opal and a TiO 2 inverse opal crystal films. → The photonic heterostructure had two photonic-band gaps. → The relative position of the two photonic-band gaps can be controlled by the size of PS microspheres used to fabricate the photonic heterostructure. - Abstract: Photonic crystal heterostructures were fabricated through a room temperature floating self-assembly (RTFSA) method recently developed by our research group. Applying this method, opal colloidal crystal heterostructures of several square centimeters in area were fabricated within tens of minutes without special facilities, and a heterostructure composed of a PS opal and a TiO 2 inverse opal crystal films was fabricated. SEM image of the PS opal-TiO 2 inverse opal heterostructure showed the ordered growth of the top opal film of the heterostructure was hardly disturbed by the cracks in the TiO 2 inverse opal film. The UV-vis transmission spectra indicated that the photonic heterostructures had two photonic-band gaps, and the relative position of two photonic-band gaps can be controlled by the size of PS microspheres used to fabricated the photonic heterostructures.

  12. Superthin Solar Cells Based on AIIIBV/Ge Heterostructures

    Science.gov (United States)

    Pakhanov, N. A.; Pchelyakov, O. P.; Vladimirov, V. M.

    2017-11-01

    A comparative analysis of the prospects of creating superthin, light-weight, and highly efficient solar cells based on AIIIBV/InGaAs and AIIIBV/Ge heterostructures is performed. Technological problems and prospects of each variant are discussed. A method of thinning of AIIIBV/Ge heterostructures with the use of an effective temporary carrier is proposed. The method allows the process to be performed almost with no risk of heterostructure fracture, thinning of the Ge junction down to several tens of micrometers (or even several micrometers), significant enhancement of the yield of good structures, and also convenient and reliable transfer of thinned solar cells to an arbitrary light and flexible substrate. Such a technology offers a possibility of creating high-efficiency thin and light solar cells for space vehicles on the basis of mass-produced AIIIBV/Ge heterostructures.

  13. Laser therapy for onychomycosis in patients with diabetes at risk for foot complications : study protocol for a randomized, double-blind, controlled trial (LASER-1)

    NARCIS (Netherlands)

    Nijenhuis-Rosien, Leonie; Kleefstra, Nanne; Wolfhagen, Maurice J.; Groenier, Klaas H.; Bilo, Henk J. G.; Landman, Gijs W. D.

    2015-01-01

    Background: In a sham-controlled double-blind trial, we aim to establish the efficacy and safety of the local application of laser therapy in patients with diabetes, onychomycosis and risk factors for diabetes-related foot complications. Onychomycosis leads to thickened and distorted nails, which in

  14. Periodically poled self-frequency-doubling green laser fabricated from Nd:Mg:LiNbO₃ single crystal.

    Science.gov (United States)

    Wang, Dong Zhou; Sun, De Hui; Kang, Xue Liang; Sang, Yuan Hua; Yan, Bo Xia; Liu, Hong; Bi, Yong

    2015-07-13

    Although a breakthrough in the fabrication of green laser diodes has occurred, the high costs associated with the difficulty of manufacture still present a great obstacle for its practical application. Another approach for producing a green laser, by combining a laser device and a nonlinear crystal, entails the fabrication of complex structures and exhibits unstable performance due to interface contact defects, thus limiting its application. In this work, we report the fabrication by domain engineering of high quality periodically poled LiNbO₃, co-doped with Nd³⁺ and Mg²⁺, which combines a laser medium and a high efficiency second harmonic conversion crystal into a single system that is designed to overcome the above problems. An 80 mW self-frequency doubling green laser was constructed for the first time from a periodically poled Nd:Mg:LiNbO₃ crystal of 16 mm in length. This crystal can be used for developing compact, stable, highly efficient mini-solid-state-lasers, which promise to have many applications in portable laser-based spectroscopy, photo-communications, terahertz wave generation, and laser displays.

  15. Integrated lasers in crystalline double tungstates with focused-ion-beam nanostructured photonic cavities

    International Nuclear Information System (INIS)

    Ay, F; Iñurrategui, I; Geskus, D; Aravazhi, S; Pollnau, M

    2011-01-01

    Deeply etched Bragg gratings were fabricated by focused ion beam (FIB) milling in KGd x Lu 1-x (WO 4 ) 2 :Yb 3+ to obtain photonic cavity structures. By optimizing parameters such as dose per area, dwell time and pixel resolution the redeposition effects were minimized and grating structures more than 4 μm in depth with an improved sidewall angle of ∼ 5° were achieved. Fabry-Perot microcavities were defined and used to assess the optical performance of the grating structures at ∼ 1530 nm. An on-chip integrated laser cavity at ∼ 980 nm was achieved by defining a FIB reflective grating and FIB polished waveguide end-facet. With this cavity, an on-chip integrated waveguide laser in crystalline potassium double tungstate was demonstrated

  16. Fs–ns double-pulse Laser Induced Breakdown Spectroscopy of copper-based-alloys: Generation and elemental analysis of nanoparticles

    Energy Technology Data Exchange (ETDEWEB)

    Guarnaccio, A.; Parisi, G.P.; Mollica, D. [CNR-ISM, U.O.S. Tito Scalo, Zona Industriale, 85050 Tito Scalo, PZ (Italy); De Bonis, A. [CNR-ISM, U.O.S. Tito Scalo, Zona Industriale, 85050 Tito Scalo, PZ (Italy); Dipartimento di Scienze, Università degli Studi della Basilicata, Via dell' Ateneo Lucano 10, 85100 Potenza (Italy); Teghil, R. [Dipartimento di Scienze, Università degli Studi della Basilicata, Via dell' Ateneo Lucano 10, 85100 Potenza (Italy); Santagata, A. [CNR-ISM, U.O.S. Tito Scalo, Zona Industriale, 85050 Tito Scalo, PZ (Italy)

    2014-11-01

    Evolution of nanoparticles ejected during ultra-short (250 fs) laser ablation of certified copper alloys and relative calibration plots of a fs–ns double-pulse Laser Induced Breakdown Spectroscopy orthogonal configuration is presented. All work was performed in air at atmospheric pressure using certified copper-based-alloy samples irradiated by a fs laser beam and followed by a delayed perpendicular ns laser pulse. In order to evaluate possible compositional changes of the fs induced nanoparticles, it was necessary to consider, for all samples used, comparable features of the detected species. With this purpose the induced nanoparticles black-body-like emission evolution and their relative temperature decay have been studied. These data were exploited for defining the distance between the target surface and the successive ns laser beam to be used. The consequent calibration plots of minor constituents (i.e. Sn, Pb and Zn) of the certified copper-based-alloy samples have been reported by taking into account self-absorption effects. The resulting linear regression coefficients suggest that the method used, for monitoring and ruling the fs laser induced nanoparticles, could provide a valuable approach for establishing the occurrence of potential compositional changes of the detected species. All experimental data reveal that the fs laser induced nanoparticles can be used for providing a coherent composition of the starting target. In the meantime, the fs–ns double-pulse Laser Induced Breakdown Spectroscopy orthogonal configuration here used can be considered as an efficient technique for compositional determination of the nanoparticles ejected during ultra-short laser ablation processes. - Highlights: • Laser induced NP continuum black-body-like emission was used for T determination. • Invariable composition of generated NPs was assumed in the range of 20 μs. • Fs-ns DP-LIBS was employed for the compositional characterization of NPs. • NPs obtained by fs

  17. High-temperature CW and pulsed operation in constricted double-heterojunction AlGaAs diode lasers

    Science.gov (United States)

    Botez, D.; Connolly, J. C.; Gilbert, D. B.

    1981-01-01

    The behavior of constricted double-heterojunction (CDH) diode lasers has been investigated up to 170 C CW and 270 C pulsed. It is found that the temperature-dependent current concentration effect responsible for low threshold-current sensitivity and temperature-invariant external differential quantum efficiency in CDH lasers saturates at about 100 C. It is also found that over a wide temperature interval (180-280 C) the threshold current density has a To value of 40-50 C and that the spontaneous emission becomes increasingly sublinear above 220 C. Both effects are believed to reflect Auger recombination.

  18. Atomic layer MoS2-graphene van der Waals heterostructure nanomechanical resonators.

    Science.gov (United States)

    Ye, Fan; Lee, Jaesung; Feng, Philip X-L

    2017-11-30

    Heterostructures play significant roles in modern semiconductor devices and micro/nanosystems in a plethora of applications in electronics, optoelectronics, and transducers. While state-of-the-art heterostructures often involve stacks of crystalline epi-layers each down to a few nanometers thick, the intriguing limit would be hetero-atomic-layer structures. Here we report the first experimental demonstration of freestanding van der Waals heterostructures and their functional nanomechanical devices. By stacking single-layer (1L) MoS 2 on top of suspended single-, bi-, tri- and four-layer (1L to 4L) graphene sheets, we realize an array of MoS 2 -graphene heterostructures with varying thickness and size. These heterostructures all exhibit robust nanomechanical resonances in the very high frequency (VHF) band (up to ∼100 MHz). We observe that fundamental-mode resonance frequencies of the heterostructure devices fall between the values of graphene and MoS 2 devices. Quality (Q) factors of heterostructure resonators are lower than those of graphene but comparable to those of MoS 2 devices, suggesting interface damping related to interlayer interactions in the van der Waals heterostructures. This study validates suspended atomic layer heterostructures as an effective device platform and provides opportunities for exploiting mechanically coupled effects and interlayer interactions in such devices.

  19. Perestraivaemye tokom lazery na 3.3 mkm s uzkoj liniej izlučenija

    Czech Academy of Sciences Publication Activity Database

    Imenkov, A. N.; Kolčanova, N. M.; Kubát, Pavel; Moiseev, K. D.; Civiš, Svatopluk; Jakovlev, J. P.

    2001-01-01

    Roč. 35, č. 3 (2001), s. 375-379 ISSN 0015-3222 R&D Projects: GA AV ČR IAA4040708 Institutional research plan: CEZ:AV0Z4040901 Keywords : InAsSb/InAsSbP * diode lasers * double heterostructure Subject RIV: CF - Physical ; Theoretical Chemistry

  20. Wave mechanics applied to semiconductor heterostructures

    International Nuclear Information System (INIS)

    Bastard, G.

    1990-01-01

    This book examines the basic electronic and optical properties of two dimensional semiconductor heterostructures based on III-V and II-VI compounds. The book explores various consequences of one-dimensional size-quantization on the most basic physical properties of heterolayers. Beginning with basic quantum mechanical properties of idealized quantum wells and superlattices, the book discusses the occurrence of bound states when the heterostructure is imperfect or when it is shone with near bandgap light

  1. Four-Wave Mixing of a Laser and Its Frequency-Doubled Version in a Multimode Optical Fiber

    Directory of Open Access Journals (Sweden)

    Hamed Pourbeyram

    2015-08-01

    Full Text Available It is shown that it is possible to couple a laser beam and its frequency-doubled daughter into a multimode optical fiber through the four-wave mixing nonlinear process and generate a new wavelength. The frequency-doubled daughter can be generated in an external crystal with a large second order nonlinearity. It is argued that while this possibility is within the design parameter range of conventional multimode optical fibers, it necessitates a lower-bound for the core-cladding refractive index contrast of the multimode optical fiber.

  2. Temperature dependence of carrier transfer and exciton localization in ZnO/MgZnO heterostructure

    Energy Technology Data Exchange (ETDEWEB)

    Zhao Dongxu [Key Laboratory of Excited State Process, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, 16 East Nan-Hu Road, Open Economic Zone, Changchun 130033 (China)]. E-mail: dxzhao2000@yahoo.com.cn; Li Binghui [Key Laboratory of Excited State Process, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, 16 East Nan-Hu Road, Open Economic Zone, Changchun 130033 (China); Center for Advanced Optoelectronic Functional Material Research, Northeast Normal University, Changchun 130024 (China); Wu Chunxia [Key Laboratory of Excited State Process, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, 16 East Nan-Hu Road, Open Economic Zone, Changchun 130033 (China); Graduate School of the Chinese Academy of Sciences (China); Lu Youming [Key Laboratory of Excited State Process, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, 16 East Nan-Hu Road, Open Economic Zone, Changchun 130033 (China); Shen Dezhen [Key Laboratory of Excited State Process, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, 16 East Nan-Hu Road, Open Economic Zone, Changchun 130033 (China); Zhang Jiying [Key Laboratory of Excited State Process, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, 16 East Nan-Hu Road, Open Economic Zone, Changchun 130033 (China); Fan Xiwu [Key Laboratory of Excited State Process, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, 16 East Nan-Hu Road, Open Economic Zone, Changchun 130033 (China)

    2006-07-15

    MgZnO/ZnO heterostructure was fabricated on sapphire substrate by plasma assistant molecular beam epitaxy. The micro-photoluminescence spectra of sample are reported, which shows that different emission peaks would appear when the laser beam focuses different deepness in the film. A carrier tunneling process from the MgZnO capping layer to ZnO layer was observed by the measured temperature dependence of photoluminescence spectra. This induces the emission intensity of the ZnO grew monotonically from 81 to 103 K.

  3. High-precision hyperfine structure measurement in slow atomic ion beams by collinear laser-rf double resonance

    International Nuclear Information System (INIS)

    Amarjit Sen; Childs, W.J.; Goodman, L.S.

    1987-01-01

    A new collinear laser-ion beam apparatus for slow ions (1 to 1.5 keV) has been built for measuring the hyperfine structure of metastable levels of ions with laser-rf double resonance technique. Narrow linewidths of ∼60 kHz (FWHM) have been observed for the first time in such systems. As a first application the hyperfine structure of the 4f 7 ( 8 S 0 )5d 9 D/sub J/ 0 metastable levels of /sup 151,153/Eu + has been measured with high precision. 10 refs., 8 figs

  4. Charge and field coupling phenomena at metal-oxide interfaces and their applications

    Science.gov (United States)

    Voora, Venkata M.

    Heterostructures composed of polar materials, such as ferroelectric and/or piezoelectric, are interesting due to their interface lattice charge coupling (LCC) effects. In this thesis, coupling effects between switchable ferroelectric and non-switchable piezoelectric semiconductor spontaneous polarizations are addressed. Also discussed is a dielectric continuum model approach for studying LCC effects in double layer piezoelectric semiconductor-ferroelectric and triple layer piezoelectric semiconductor-ferroelectric-piezoelectric semiconductor heterostructures. The dielectric continuum model augments the effects of electric field driven switchable polarization due to LCC with depletion layer formation in semiconductor heterostructures. Electrical investigations were used to study a reference single layer (BaTiO3), a double layer (BaTiO3-ZnO), and a triple layer (ZnO-BaTiO 3-ZnO) heterostructure grown by pulsed laser deposition. The coupling between the non-switchable spontaneous polarization of ZnO and the electrically switchable spontaneous polarization of BaTiO3 causes strong asymmetric polarization hysteresis behavior. The n-type ZnO layer within double and triple layered heterostructures reveals hysteresis-dependent capacitance variations upon formation of depletion layers at the ZnO/BaTiO 3 interfaces. Model analysis show very good agreement between the generated data and the experimental results. The dielectric continuum model approach allows for the derivation of the amount and orientation of the spontaneous polarization of the piezoelectric constituents, and can be generalized towards multiple layer piezoelectric semiconductor-ferroelectric heterostructures. Based on experimental results the polarization coupled ZnO-BaTiO 3-ZnO heterostructures is identified as a two-terminal unipolar ferroelectric bi-junction transistor which can be utilized in memory storage devices. Furthermore it is discussed, that the triple layer heterostructure with magnetically

  5. Chaos-based communications using semiconductor lasers subject to feedback from an integrated double cavity

    International Nuclear Information System (INIS)

    Tronciu, V Z; Mirasso, Claudio R; Colet, Pere

    2008-01-01

    We report the results of numerical investigations of the dynamical behaviour of an integrated device composed of a semiconductor laser and a double cavity that provides optical feedback. Due to the influence of the feedback, under the appropriate conditions, the system displays chaotic behaviour appropriate for chaos-based communications. The optimal conditions for chaos generation are identified. It is found that the double cavity feedback requires lower feedback strengths for developing high complexity chaos when compared with a single cavity. The synchronization of two unidirectional coupled (master-slave) systems and the influence of parameters mismatch on the synchronization quality are also studied. Finally, examples of message encoding and decoding are presented and discussed

  6. Opacity and atomic analysis of double pulse laser ablated Li plasma

    Science.gov (United States)

    Sivakumaran, V.; Joshi, H. C.; Kumar, Ajai

    2014-09-01

    Opacity effects for neutral and ionic emission lines of lithium have been investigated by Atomic Data Analysis Structure (ADAS). Line ratios and opacity corrected photon emissivity coefficients are calculated over a wide range of electron temperatures and densities. The experimentally measured temporal evolution of the line profiles of the over dense Li plasma formed in the double pulse laser ablation experiment have been explained using the ADAS analysis and the plasma parameters of the plasma plume under consideration have been estimated. These results could be projected as a diagnostic tool to estimate plasma parameters of an over dense lithium plasma.

  7. Optical double-locked semiconductor lasers

    Science.gov (United States)

    AlMulla, Mohammad

    2018-06-01

    Self-sustained period-one (P1) nonlinear dynamics of a semiconductor laser are investigated when both optical injection and modulation are applied for stable microwave frequency generation. Locking the P1 oscillation through modulation on the bias current, injection strength, or detuning frequency stabilizes the P1 oscillation. Through the phase noise variance, the different modulation types are compared. It is demonstrated that locking the P1 oscillation through optical modulation on the output of the master laser outperforms bias-current modulation of the slave laser. Master laser modulation shows wider P1-oscillation locking range and lower phase noise variance. The locking characteristics of the P1 oscillation also depend on the operating conditions of the optical injection system

  8. Computer-automated tuning of semiconductor double quantum dots into the single-electron regime

    Energy Technology Data Exchange (ETDEWEB)

    Baart, T. A.; Vandersypen, L. M. K. [QuTech, Delft University of Technology, P.O. Box 5046, 2600 GA Delft (Netherlands); Kavli Institute of Nanoscience, Delft University of Technology, P.O. Box 5046, 2600 GA Delft (Netherlands); Eendebak, P. T. [QuTech, Delft University of Technology, P.O. Box 5046, 2600 GA Delft (Netherlands); Netherlands Organisation for Applied Scientific Research (TNO), P.O. Box 155, 2600 AD Delft (Netherlands); Reichl, C.; Wegscheider, W. [Solid State Physics Laboratory, ETH Zürich, 8093 Zürich (Switzerland)

    2016-05-23

    We report the computer-automated tuning of gate-defined semiconductor double quantum dots in GaAs heterostructures. We benchmark the algorithm by creating three double quantum dots inside a linear array of four quantum dots. The algorithm sets the correct gate voltages for all the gates to tune the double quantum dots into the single-electron regime. The algorithm only requires (1) prior knowledge of the gate design and (2) the pinch-off value of the single gate T that is shared by all the quantum dots. This work significantly alleviates the user effort required to tune multiple quantum dot devices.

  9. Photoelectrochemical-type sunlight photodetector based on MoS2/graphene heterostructure

    International Nuclear Information System (INIS)

    Huang, Zongyu; Han, Weijia; Chander, D Sathish; Qi, Xiang; Zhang, Han; Tang, Hongli; Ren, Long

    2015-01-01

    We have fabricated a novel sunlight photo-detector based on a MoS 2 /graphene heterostructure. The MoS 2 /graphene heterostructure was prepared by a facile hydrothermal method along with a subsequent annealing process followed by a substrate-induced high selective nucleation and growth mechanism. The microstructures and morphologies of the two-dimensional MoS 2 /graphene heterostructure can be experimentally confirmed by x-ray diffraction (XRD), Raman spectroscopy, scanning electron microscopy (SEM), transmission electron microscopy (TEM) and a UV–vis absorption spectrometer. Photoresponse investigations performed by a photoelectrochemical (PEC) measurement system indicate that the synthesized MoS 2 /graphene heterostructure shows superior photoresponse activities under the illumination of sunlight in contrast with bare MoS 2 and graphene. The improved photoresponsivity can be attributed to the enhanced light absorption, strong light–matter interaction and the extremely efficient charge separation of the heterostructure. The structure and performances of the MoS 2 /graphene heterostructure suggest promising applications in the field of photonics and optoelectronics. (paper)

  10. 40 Gb/s Pulse Generation Using Gain Switching of a Commercially Available Laser Module

    DEFF Research Database (Denmark)

    Nørregaard, Jesper; Hanberg, Jesper; Franck, Thorkild

    1999-01-01

    The laser module contains a single-mode, distributed feedback (DFB) laser diode. The epi-structure of the laser diode is grown by MOCVD as a multiple quantum well heterostructure. The DFB grating is defined by holography, and the laser diode is designed with a co-planar contact metallization...... time division multiplexing to generate a 40 Gb/s RZ pattern.The presentation will report on further details on the laser module including chirp characteristics, and show the eye diagrams taken at 10 and 40 Gb/s....

  11. Heterostructures of transition metal dichalcogenides

    KAUST Repository

    Amin, Bin

    2015-08-24

    The structural, electronic, optical, and photocatalytic properties of out-of-plane and in-plane heterostructures of transition metal dichalcogenides are investigated by (hybrid) first principles calculations. The out-of-plane heterostructures are found to be indirect band gap semiconductors with type-II band alignment. Direct band gaps can be achieved by moderate tensile strain in specific cases. The excitonic peaks show blueshifts as compared to the parent monolayer systems, whereas redshifts occur when the chalcogen atoms are exchanged along the series S-Se-Te. Strong absorption from infrared to visible light as well as excellent photocatalytic properties can be achieved.

  12. Power and efficiency scaling of diode pumped Cr:LiSAF lasers: 770-1110 nm tuning range and frequency doubling to 387-463 nm.

    Science.gov (United States)

    Demirbas, Umit; Baali, Ilyes

    2015-10-15

    We report significant average power and efficiency scaling of diode-pumped Cr:LiSAF lasers in continuous-wave (cw), cw frequency-doubled, and mode-locked regimes. Four single-emitter broad-area laser diodes around 660 nm were used as the pump source, which provided a total pump power of 7.2 W. To minimize thermal effects, a 20 mm long Cr:LiSAF sample with a relatively low Cr-concentration (0.8%) was used as the gain medium. In cw laser experiments, 2.4 W of output power, a slope efficiency of 50%, and a tuning range covering the 770-1110 nm region were achieved. Intracavity frequency doubling with beta-barium borate (BBO) crystals generated up to 1160 mW of blue power and a record tuning range in the 387-463 nm region. When mode locked with a saturable absorber mirror, the laser produced 195 fs pulses with 580 mW of average power around 820 nm at a 100.3 MHz repetition rate. The optical-to-optical conversion efficiency of the system was 33% in cw, 16% in cw frequency-doubled, and 8% in cw mode-locked regimes.

  13. Engineering charge transport by heterostructuring solution-processed semiconductors

    Science.gov (United States)

    Voznyy, Oleksandr; Sutherland, Brandon R.; Ip, Alexander H.; Zhitomirsky, David; Sargent, Edward H.

    2017-06-01

    Solution-processed semiconductor devices are increasingly exploiting heterostructuring — an approach in which two or more materials with different energy landscapes are integrated into a composite system. Heterostructured materials offer an additional degree of freedom to control charge transport and recombination for more efficient optoelectronic devices. By exploiting energetic asymmetry, rationally engineered heterostructured materials can overcome weaknesses, augment strengths and introduce emergent physical phenomena that are otherwise inaccessible to single-material systems. These systems see benefit and application in two distinct branches of charge-carrier manipulation. First, they influence the balance between excitons and free charges to enhance electron extraction in solar cells and photodetectors. Second, they promote radiative recombination by spatially confining electrons and holes, which increases the quantum efficiency of light-emitting diodes. In this Review, we discuss advances in the design and composition of heterostructured materials, consider their implementation in semiconductor devices and examine unexplored paths for future advancement in the field.

  14. Variable electronic properties of lateral phosphorene-graphene heterostructures.

    Science.gov (United States)

    Tian, Xiaoqing; Liu, Lin; Du, Yu; Gu, Juan; Xu, Jian-Bin; Yakobson, Boris I

    2015-12-21

    Phosphorene and graphene have a tiny lattice mismatch along the armchair direction, which can result in an atomically sharp in-plane interface. The electronic properties of the lateral heterostructures of phosphorene/graphene are investigated by the first-principles method. Here, we demonstrate that the electronic properties of this type of heterostructure can be highly tunable by the quantum size effects and the externally applied electric field (Eext). At strong Eext, Dirac Fermions can be developed with Fermi velocities around one order smaller than that of graphene. Undoped and hydrogen doped configurations demonstrate three drastically different electronic phases, which reveal the strongly tunable potential of this type of heterostructure. Graphene is a naturally better electrode for phosphorene. The transport properties of two-probe devices of graphene/phosphorene/graphene exhibit tunnelling transport characteristics. Given these results, it is expected that in-plane heterostructures of phosphorene/graphene will present abundant opportunities for applications in optoelectronic and electronic devices.

  15. Nanoscale heterostructures with molecular-scale single-crystal metal wires.

    Science.gov (United States)

    Kundu, Paromita; Halder, Aditi; Viswanath, B; Kundu, Dipan; Ramanath, Ganpati; Ravishankar, N

    2010-01-13

    Creating nanoscale heterostructures with molecular-scale (synthesis of nanoscale heterostructures with single-crystal molecular-scale Au nanowires attached to different nanostructure substrates. Our method involves the formation of Au nanoparticle seeds by the reduction of rocksalt AuCl nanocubes heterogeneously nucleated on the substrates and subsequent nanowire growth by oriented attachment of Au nanoparticles from the solution phase. Nanoscale heterostructures fabricated by such site-specific nucleation and growth are attractive for many applications including nanoelectronic device wiring, catalysis, and sensing.

  16. Backward pumping kilowatt Yb3+-doped double-clad fiber laser

    Science.gov (United States)

    Han, Z. H.; Lin, X. C.; Hou, W.; Yu, H. J.; Zhou, S. Z.; Li, J. M.

    2011-09-01

    A ytterbium-doped double-clad fiber laser generating up to 1026 W of continuous-wave output power at 1085 nm with a slope efficiency of 74% by single-ended backward pumping configuration is reported. The core diameter was 20 μm with a low numerical aperture of 0.06, and a good beam quality (BPP < 1.8 mm mrad) is achieved without special mode selection methods. No undesirable roll-over was observed in output power with increasing pump power, and the maximum output power was limited by the available pump power. The instability of maximum output power was better than ±0.6%. Different pumping configurations were also compared in experiment, which shows good agreements with theoretical analyses.

  17. Axial Ge/Si nanowire heterostructure tunnel FETs.

    Energy Technology Data Exchange (ETDEWEB)

    Dayeh, Shadi A. (Los Alamos National Laboratory); Gin, Aaron V.; Huang, Jian Yu; Picraux, Samuel Thomas (Los Alamos National Laboratory)

    2010-03-01

    Axial Ge/Si heterostructure nanowires (NWs) allow energy band-edge engineering along the axis of the NW, which is the charge transport direction, and the realization of asymmetric devices for novel device architectures. This work reports on two significant advances in the area of heterostructure NWs and tunnel FETs: (i) the realization of 100% compositionally modulated Si/Ge axial heterostructure NWs with lengths suitable for device fabrication and (ii) the design and implementation of Schottky barrier tunnel FETs on these NWs for high-on currents and suppressed ambipolar behavior. Initial prototype devices with 10 nm PECVD SiN{sub x} gate dielectric resulted in a very high current drive in excess of 100 {micro}A/{micro}m (I/{pi}D) and 10{sup 5} I{sub on}/I{sub off} ratios. Prior work on the synthesis of Ge/Si axial NW heterostructures through the VLS mechanism have resulted in axial Si/Si{sub 1-x}Ge{sub x} NW heterostructures with x{sub max} {approx} 0.3, and more recently 100% composition modulation was achieved with a solid growth catalyst. In this latter case, the thickness of the heterostructure cannot exceed few atomic layers due to the slow axial growth rate and concurrent radial deposition on the NW sidewalls leading to a mixture of axial and radial deposition, which imposes a big challenge for fabricating useful devices form these NWs in the near future. Here, we report the VLS growth of 100% doping and composition modulated axial Ge/Si heterostructure NWs with lengths appropriate for device fabrication by devising a growth procedure that eliminates Au diffusion on the NW sidewalls and minimizes random kinking in the heterostructure NWs as deduced from detailed microscopy analysis. Fig. 1 a shows a cross-sectional SEM image of epitaxial Ge/Si axial NW heterostructures grown on a Ge(111) surface. The interface abruptness in these Ge/Si heterostructure NWs is of the order of the NW diameter. Some of these NWs develop a crystallographic kink that is {approx

  18. In-fiber modal interferometer based on multimode and double cladding fiber segments for tunable fiber laser applications

    Science.gov (United States)

    Prieto-Cortés, P.; Álvarez-Tamayo, R. I.; Durán-Sánchez, M.; Castillo-Guzmán, A.; Salceda-Delgado, G.; Ibarra-Escamilla, B.; Kuzin, E. A.; Barcelata-Pinzón, A.; Selvas-Aguilar, R.

    2018-02-01

    We report an in-fiber structure based on the use of a multimode fiber segment and a double cladding fiber segment, and its application as spectral filter in an erbium-doped fiber laser for selection and tuning of the laser line wavelength. The output transmission of the proposed device exhibit spectrum modulation of the input signal with free spectral range of 21 nm and maximum visibility enhanced to more than 20 dB. The output spectrum of the in-fiber filter is wavelength displaced by bending application which allows a wavelength tuning of the generated laser line in a range of 12 nm. The use of the proposed in-fiber structure is demonstrated as a reliable, simple, and low-cost wavelength filter for tunable fiber lasers design and optical instrumentation applications.

  19. Narrow line-width Tm3+ doped double-clad silica fiber laser based on in-line cascade biconical tapers filter

    International Nuclear Information System (INIS)

    Tian, Y; Zhao, J Q; Wang, W; Wang, Y Z; Gao, W

    2010-01-01

    Narrow line-width 793 nm laser diode cladding pumped Tm 3+ doped double cladding silica fiber laser with in-line four concatenated tapers filter was reported for the first time to our knowledge. These cascade tapers located 3.6 cm from the output end of the fiber laser was fabricated by heating and stretching method. The taper's transmitted power response as a function of wavelength was described by using local mode coupling theory and successive tapers filter model. The wavelength filter function of the in-line cascade tapers in a linear cavity fiber laser was demonstrated, and the experimental result agreed with these theories. The maximum output laser power was 736 mW, corresponding to single peak of laser spectrum with narrow line-width of ∼ 60 pm

  20. Ionic conductivity in oxide heterostructures: the role of interfaces

    Directory of Open Access Journals (Sweden)

    Emiliana Fabbri, Daniele Pergolesi and Enrico Traversa

    2010-01-01

    Full Text Available Rapidly growing attention is being directed to the investigation of ionic conductivity in oxide film heterostructures. The main reason for this interest arises from interfacial phenomena in these heterostructures and their applications. Recent results revealed that heterophase interfaces have faster ionic conduction pathways than the bulk or homophase interfaces. This finding can open attractive opportunities in the field of micro-ionic devices. The influence of the interfaces on the conduction properties of heterostructures is becoming increasingly important with the miniaturization of solid-state devices, which leads to an enhanced interface density at the expense of the bulk. This review aims to describe the main evidence of interfacial phenomena in ion-conducting film heterostructures, highlighting the fundamental and technological relevance and offering guidelines to understanding the interface conduction mechanisms in these structures.

  1. 16.4 W laser output at 1.34 μm with twin Nd:YVO4 crystals and double-end-pumping structure

    International Nuclear Information System (INIS)

    Lu, C; Gong, M; Liu, Q; Huang, L; He, F

    2008-01-01

    High-power high-beam-quality 1.34 μm continuous-wave laser with twin Nd:YVO 4 crystals pumped by four fiber-coupled laser diodes, which constructed a double-end-pumping structure, is reported. With total 60 W pumping power incident, the highest 16.4 W output laser power was generated, the slope efficiency and optical efficiency were measured as better than 30.0% and 27.3%, respectively. With 12 W laser output, the beam quality was measured to be better than two times diffraction-limit and the instability of laser output was determined to be better than 1% over an hour time

  2. Control of laser absorbing efficiency and proton quality by a specific double target

    Czech Academy of Sciences Publication Activity Database

    Yu, Q.; Gu, Yanjun; Li, X.F.; Qu, J.F.; Kong, Q.; Kawata, S.

    2016-01-01

    Roč. 18, č. 8 (2016), 1-9, č. článku 083024. ISSN 1367-2630 R&D Projects: GA MŠk LQ1606; GA MŠk EF15_008/0000162 Grant - others:ELI Beamlines(XE) CZ.02.1.01/0.0/0.0/15_008/0000162 Institutional support: RVO:68378271 Keywords : improved proton beam quality * increased laser absorption efficiency * specific double-layer target Subject RIV: BL - Plasma and Gas Discharge Physics Impact factor: 3.786, year: 2016

  3. Ion Acceleration by Ultra-intense Laser Pulse Interacting with Double-layer Near-critical Density Plasma

    International Nuclear Information System (INIS)

    Gu, Y. J.; Kong, Q.; Li, X. F.; Yu, Q.; Wang, P. X.; Kawata, S.; Izumiyama, T.; Nagashima, T.; Takano, M.; Barada, D.; Ma, Y. Y.

    2016-01-01

    A collimated ion beam is generated through the interaction between ultra-intense laser pulse and a double layer plasma. The maximum energy is above 1 GeV and the total charge of high energy protons is about several tens of nC/μm. The double layer plasma is combined with an underdense plasma and a thin overdense one. The wakefield traps and accelerates a bunch of electrons to high energy in the first underdense slab. When the well collimated electron beam accelerated by the wakefield penetrates through the second overdense slab, it enhances target normal sheath acceleration (TNSA) and breakout after-burner (BOA) regimes. The mechanism is simulated and analyzed by 2.5 dimensional Particle-in-cell code. Compared with single target TNSA or BOA, both the acceleration gradient and energy transfer efficiency are higher in the double layer regime. (paper)

  4. Quasi-Two-Dimensional h-BN/β-Ga2O3 Heterostructure Metal-Insulator-Semiconductor Field-Effect Transistor.

    Science.gov (United States)

    Kim, Janghyuk; Mastro, Michael A; Tadjer, Marko J; Kim, Jihyun

    2017-06-28

    β-gallium oxide (β-Ga 2 O 3 ) and hexagonal boron nitride (h-BN) heterostructure-based quasi-two-dimensional metal-insulator-semiconductor field-effect transistors (MISFETs) were demonstrated by integrating mechanical exfoliation of (quasi)-two-dimensional materials with a dry transfer process, wherein nanothin flakes of β-Ga 2 O 3 and h-BN were utilized as the channel and gate dielectric, respectively, of the MISFET. The h-BN dielectric, which has an extraordinarily flat and clean surface, provides a minimal density of charged impurities on the interface between β-Ga 2 O 3 and h-BN, resulting in superior device performances (maximum transconductance, on/off ratio, subthreshold swing, and threshold voltage) compared to those of the conventional back-gated configurations. Also, double-gating of the fabricated device was demonstrated by biasing both top and bottom gates, achieving the modulation of the threshold voltage. This heterostructured wide-band-gap nanodevice shows a new route toward stable and high-power nanoelectronic devices.

  5. [Enhancement effect of double-beam laser processed aqueous solution on ICP emission spectrum].

    Science.gov (United States)

    Chen, Jin-zhong; Xu, Li-jing; Su, Hong-xin; Li, Xu; Wang, Shu-fang

    2015-01-01

    In order to change the physical properties of aqueous solution and improve the radiation intensity of the ICP emission spectrum, the effects of different laser power density and irradiation time on the surface tension and viscosity of aqueous solution were investigated by using near infrared laser at 976 nm and CO2 laser at 10. 6 µm to irradiate aqueous solution orthogonally, then the enhancement of ICP spectral intensity with processed solution was discussed. The results showed that the surface tension and viscosity of aqueous solution reduced by 42. 13% and 14. 03% compared with the untreated, and the atomization efficiency increased by 51.26% at the laser power density 0. 265 7 W . cm-2 of 976 nm and 0. 206 9 W . cm-2 of CO2 laser with 40 min irradiation time. With the optimized aqueous solution introduced into the ICP source, the spectral line intensity of sample elements As, Cd, Cr, Hg and Pb was enhanced by 46.29%, 94. 65%, 30. 76%, 33.07% and 94. 58% compared to the untreated aqueous solution, while the signal-to-background ratio increased by 43. 84%, 85. 35%, 28. 71%, 34. 37% and 90. 91%, respectively. Plasma temperature and electron density also increased by 5. 94% and 1. 18% respectively. It is obvious that the method of double-beam laser orthogonal irradiation on solution can reduce the surface tension and viscosity of aqueous solution significantly, and raise the radiationintensity of ICP source, and will provide a better condition for detecting the trace heavy metal elements in water samples.

  6. Two-dimensional heterostructures for energy storage

    Energy Technology Data Exchange (ETDEWEB)

    Gogotsi, Yury G. [Drexel Univ., Philadelphia, PA (United States); Pomerantseva, Ekaterina [Drexel Univ., Philadelphia, PA (United States)

    2017-06-12

    Two-dimensional (2D) materials provide slit-shaped ion diffusion channels that enable fast movement of lithium and other ions. However, electronic conductivity, the number of intercalation sites, and stability during extended cycling are also crucial for building high-performance energy storage devices. While individual 2D materials, such as graphene, show some of the required properties, none of them can offer all properties needed to maximize energy density, power density, and cycle life. Here we argue that stacking different 2D materials into heterostructured architectures opens an opportunity to construct electrodes that would combine the advantages of the individual building blocks while eliminating the associated shortcomings. We discuss characteristics of common 2D materials and provide examples of 2D heterostructured electrodes that showed new phenomena leading to superior electrochemical performance. As a result, we also consider electrode fabrication approaches and finally outline future steps to create 2D heterostructured electrodes that could greatly expand current energy storage technologies.

  7. AIR FLOW AND ENVIRONMENTAL WIND VISUALIZATION USING A CW DIODE PUMPED FREQUENCY DOUBLED Nd:YAG Laser

    Directory of Open Access Journals (Sweden)

    Mircea UDREA

    2009-09-01

    Full Text Available Preliminary results obtained in developing a visualisation technique for non-invasive analysis of air flow inside INCAS subsonic wind tunnel and its appendages are presented. The visualisation technique is based on using a green light sheet generated by a continuous wave (cw longitudinally diode pumped and frequency doubled Nd:YAG laser. The output laser beam is expanded on one direction and collimated on rectangular direction. The system is tailored to the requirements of qualitative analysis and vortex tracking requirements inside the INCAS 2.5m x 2.0m subsonic wind tunnel test section, for measurements performed on aircraft models. Also the developed laser techniques is used for non-invasive air flow field analysis into environmental facilities settling room (air flow calming area. Quantitative analysis is enabled using special image processing tools upon movies and pictures obtained during the experiments. The basic experimental layout in the wind tunnel takes advantage of information obtained from the investigation of various aircraft models using the developed visualisation technique. These results are further developed using a Particle Imaging Velocimetry (PIV experimental technique.The focus is on visualisation techniques to be used for wind flow characterization at different altitudes in indus-trial and civil buildings areas using a light sheet generated by a Nd:YAG cw pumped and doubled laser at 532 nm wave-length. The results are important for prevention of biological/chemical disasters such as spreading of extremely toxic pol-lutants due to wind. Numerical simulations of wind flow and experimental visualisation results are compared. A good agreement between these results is observed.

  8. Application of laser-accelerated protons to the demonstration of DNA double-strand breaks in human cancer cells

    Science.gov (United States)

    Yogo, A.; Sato, K.; Nishikino, M.; Mori, M.; Teshima, T.; Numasaki, H.; Murakami, M.; Demizu, Y.; Akagi, S.; Nagayama, S.; Ogura, K.; Sagisaka, A.; Orimo, S.; Nishiuchi, M.; Pirozhkov, A. S.; Ikegami, M.; Tampo, M.; Sakaki, H.; Suzuki, M.; Daito, I.; Oishi, Y.; Sugiyama, H.; Kiriyama, H.; Okada, H.; Kanazawa, S.; Kondo, S.; Shimomura, T.; Nakai, Y.; Tanoue, M.; Sasao, H.; Wakai, D.; Bolton, P. R.; Daido, H.

    2009-05-01

    We report the demonstrated irradiation effect of laser-accelerated protons on human cancer cells. In vitro (living) A549 cells are irradiated with quasimonoenergetic proton bunches of 0.8-2.4 MeV with a single bunch duration of 15 ns. Irradiation with the proton dose of 20 Gy results in a distinct formation of γ-H2AX foci as an indicator of DNA double-strand breaks generated in the cancer cells. This is a pioneering result that points to future investigations of the radiobiological effects of laser-driven ion beams. Unique high-current and short-bunch features make laser-driven proton bunches an excitation source for time-resolved determination of radical yields.

  9. HairMax LaserComb laser phototherapy device in the treatment of male androgenetic alopecia: A randomized, double-blind, sham device-controlled, multicentre trial.

    Science.gov (United States)

    Leavitt, Matt; Charles, Glenn; Heyman, Eugene; Michaels, David

    2009-01-01

    The use of low levels of visible or near infrared light for reducing pain, inflammation and oedema, promoting healing of wounds, deeper tissue and nerves, and preventing tissue damage has been known for almost 40 years since the invention of lasers. The HairMax LaserComb is a hand-held Class 3R lower level laser therapy device that contains a single laser module that emulates 9 beams at a wavelength of 655 nm (+/-5%). The device uses a technique of parting the user's hair by combs that are attached to the device. This improves delivery of distributed laser light to the scalp. The combs are designed so that each of the teeth on the combs aligns with a laser beam. By aligning the teeth with the laser beams, the hair can be parted and the laser energy delivered to the scalp of the user without obstruction by the individual hairs on the scalp. The primary aim of the study was to assess the safety and effectiveness of the HairMax LaserComb laser phototherapy device in the promotion of hair growth and in the cessation of hair loss in males diagnosed with androgenetic alopecia (AGA). This double-blind, sham device-controlled, multicentre, 26-week trial randomized male patients with Norwood-Hamilton classes IIa-V AGA to treatment with the HairMax LaserComb or the sham device (2 : 1). The sham device used in the study was identical to the active device except that the laser light was replaced by a non-active incandescent light source. Of the 110 patients who completed the study, subjects in the HairMax LaserComb treatment group exhibited a significantly greater increase in mean terminal hair density than subjects in the sham device group (p laser phototherapy device for the treatment of AGA in males.

  10. Phosphorus-free mode-locked semiconductor laser with emission wavelength 1550 nm

    Science.gov (United States)

    Kolodeznyi, E. S.; Novikov, I. I.; Babichev, A. V.; Kurochkin, A. S.; Gladyshev, A. G.; Karachinsky, L. Ya; Gadzhiev, I. M.; Buyalo, M. S.; Usikova, A. A.; Ilynskaya, N. D.; Bougrov, V. E.; Egorov, A. Yu

    2017-11-01

    We have fabricated passive mode-locked laser diodes based on strained InGaAlAs/InGaAs/InP heterostructures with crystal lattice mismatch parameter of +1.0 % between quantum well and barrier. The laser with temperature stabilization at 18 °C was demonstrated 10.027 GHz optical pulse repetition rate with 6 ps pulse duration time. Timing jitter of optical pulses in mode-locked regime was 0.145 ps.

  11. The influence of carrier dynamics on double-state lasing in quantum dot lasers at variable temperature

    Science.gov (United States)

    Korenev, V. V.; Savelyev, A. V.; Zhukov, A. E.; Omelchenko, A. V.; Maximov, M. V.

    2014-12-01

    It is shown in analytical form that the carrier capture from the matrix as well as carrier dynamics in quantum dots plays an important role in double-state lasing phenomenon. In particular, the de-synchronization of hole and electron captures allows one to describe recently observed quenching of ground-state lasing, which takes place in quantum dot lasers operating in double-state lasing regime at high injection. From the other side, the detailed analysis of charge carrier dynamics in the single quantum dot enables one to describe the observed light-current characteristics and key temperature dependences.

  12. The influence of carrier dynamics on double-state lasing in quantum dot lasers at variable temperature

    International Nuclear Information System (INIS)

    Korenev, V V; Savelyev, A V; Zhukov, A E; Omelchenko, A V; Maximov, M V

    2014-01-01

    It is shown in analytical form that the carrier capture from the matrix as well as carrier dynamics in quantum dots plays an important role in double-state lasing phenomenon. In particular, the de-synchronization of hole and electron captures allows one to describe recently observed quenching of ground-state lasing, which takes place in quantum dot lasers operating in double-state lasing regime at high injection. From the other side, the detailed analysis of charge carrier dynamics in the single quantum dot enables one to describe the observed light-current characteristics and key temperature dependences

  13. Effect of double layer thickness on magnetoelectric coupling in multiferroic BaTiO3-Bi0.95Gd0.05FeO3 multilayers

    Science.gov (United States)

    Hohenberger, S.; Lazenka, V.; Temst, K.; Selle, S.; Patzig, C.; Höche, T.; Grundmann, M.; Lorenz, M.

    2018-05-01

    The effect of double-layer thickness and partial substitution of Bi3+ by Gd3+ is demonstrated for multiferroic BaTiO3–BiFeO3 2–2 heterostructures. Multilayers of 15 double layers of BaTiO3 and Bi0.95Gd0.05FeO3 were deposited onto (0 0 1) oriented SrTiO3 substrates by pulsed laser deposition with various double layer thicknesses. X-ray diffraction and high resolution transmission electron microscopy investigations revealed a systematic strain tuning with layer thickness via coherently strained interfaces. The multilayers show increasingly enhanced magnetoelectric coupling with reduced double layer thickness. The maximum magnetoelectric coupling coefficient was measured to be as high as 50.8 V cm‑1 Oe‑1 in 0 T DC bias magnetic field at room temperature, and 54.9 V cm‑1 Oe‑1 above 3 T for the sample with the thinnest double layer thickness of 22.5 nm. This enhancement is accompanied by progressively increasing perpendicular magnetic anisotropy and compressive out-of-plane strain. To understand the origin of the enhanced magnetoelectric coupling in such multilayers, the temperature and magnetic field dependency of is discussed. The magnetoelectric performance of the Gd3+ substituted samples is found to be slightly enhanced when compared to unsubstituted BaTiO3–BiFeO3 multilayers of comparable double-layer thickness.

  14. Mechanical properties and failure behaviour of graphene/silicene/graphene heterostructures

    International Nuclear Information System (INIS)

    Chung, Jing-Yang; Sorkin, Viacheslav; Pei, Qing-Xiang; Zhang, Yong-Wei; Chiu, Cheng-Hsin

    2017-01-01

    Van der Waals heterostructures based on graphene and other 2D materials have attracted great attention recently. In this study, the mechanical properties and failure behaviour of a graphene/silicene/graphene heterostructure are investigated using molecular dynamics simulations. We find that by sandwiching silicene in-between two graphene layers, both ultimate tensile strength and Young’s modulus of the heterostructure increase approximately by a factor of 10 compared with those of stand-alone silicene. By examining the fracture process of the heterostructure, we find that graphene and silicene exhibit quite different fracture behaviour. While graphene undergoes cleavage through its zigzag edge only, silicene can cleave through both its zigzag and armchair edges. In addition, we study the effects of temperature and strain rate on the mechanical properties of the heterostructure and find that an increase in temperature results in a decrease in its mechanical strength and stiffness, while an increase in strain rate leads to an increase in its mechanical strength without significant changes in its stiffness. We further explore the failure mechanism and show that the temperature and strain-rate dependent fracture stress can be accurately described by the kinetic theory of fracture. Our findings provide a deep insight into the mechanical properties and failure mechanism of graphene/silicene heterostructures. (paper)

  15. Highly Confined Electronic and Ionic Conduction in Oxide Heterostructures

    DEFF Research Database (Denmark)

    Pryds, Nini

    2015-01-01

    The conductance confined at the interface of complex oxide heterostructures provides new opportunities to explore nanoelectronic as well as nanoionic devices. In this talk I will present our recent results both on ionic and electronic conductivity at different heterostructures systems. In the first...... unattainable for Bi2O3-based materials, is achieved[1]. These confined heterostructures provide a playground not only for new high ionic conductivity phenomena that are sufficiently stable but also uncover a large variety of possible technological perspectives. At the second part, I will discuss and show our...

  16. High power single-frequency and frequency-doubled laser with active compensation for the thermal lens effect of terbium gallium garnet crystal.

    Science.gov (United States)

    Yin, Qiwei; Lu, Huadong; Su, Jing; Peng, Kunchi

    2016-05-01

    The thermal lens effect of terbium gallium garnet (TGG) crystal in a high power single-frequency laser severely limits the output power and the beam quality of the laser. By inserting a potassium dideuterium phosphate (DKDP) slice with negative thermo-optical coefficient into the laser resonator, the harmful influence of the thermal lens effect of the TGG crystal can be effectively mitigated. Using this method, the stable range of the laser is broadened, the bistability phenomenon of the laser during the process of changing the pump power is completely eliminated, the highest output power of an all-solid-state continuous-wave intracavity-frequency-doubling single-frequency laser at 532 nm is enhanced to 30.2 W, and the beam quality of the laser is significantly improved.

  17. Low-level laser therapy for pain relief after episiotomy: a double-blind randomised clinical trial.

    Science.gov (United States)

    Santos, Jaqueline de O; de Oliveira, Sonia M J V; da Silva, Flora M B; Nobre, Moacyr R C; Osava, Ruth H; Riesco, Maria L G

    2012-12-01

    To evaluate the effectiveness of a low-level laser therapy for pain relief in the perineum following episiotomy during childbirth. Laser irradiation is a painless and non-invasive therapy for perineal pain treatment and its effects have been investigated in several studies, with no clear conclusion on its effectiveness. A double-blind randomised controlled clinical trial. One hundred and fourteen women who underwent right mediolateral episiotomies during vaginal birth in an in-hospital birthing centre in São Paulo, Brazil and reported pain ≥ 3 on a numeric scale (0-10) were randomised into three groups of 38 women each: two experimental groups (treated with red and infrared laser) and a control group. The experimental groups were treated with laser applied at three points directly on the episiotomy after suturing in a single session between 6-56 hours postpartum. We used a diode laser with wavelengths of 660 nm (red laser) and 780 nm (infrared laser). The control group participants underwent all laser procedures, excluding the emission of irradiation. The participants and the pain scores evaluator were blinded to the type of intervention. The perineal pain scores were assessed at three time points: before, immediately after and 30 minutes after low-level laser therapy. The comparison of perineal pain between the three groups showed no significant differences in the three evaluations (p = 0.445), indicating that the results obtained in the groups treated with low-level laser therapy were equivalent to the control group. Low-level laser therapy did not decrease the intensity of perineal pain reported by women who underwent right mediolateral episiotomy. The effect of laser in perineal pain relief was not demonstrated in this study. The dosage may not have been sufficient to provide relief from perineal pain after episiotomy during a vaginal birth. © 2012 Blackwell Publishing Ltd.

  18. Electronic properties of phosphorene/graphene heterostructures: Effect of external electric field

    Energy Technology Data Exchange (ETDEWEB)

    Kaur, Sumandeep; Srivastava, Sunita; Tankeshwar, K. [Department of Physics, Panjab University, Chandigarh-160014 (India); Kumar, Ashok [Centre for Physical Sciences, School of Basic and Applied Sciences, Central University of Punjab, Bathinda, India 151001 (India)

    2016-05-23

    We report the electronic properties of electrically gated heterostructures of black and blue phosphorene with graphene. The heterostructure of blue phosphorene with graphene is energetically more favorable than black phospherene/graphene. However, both are bonded by weak interlayer interactions. Graphene induces the Dirac cone character in both heterostructure which shows tunabilities with external electric field. It is found that Dirac cone get shifted depending on the polarity of external electric field that results into the so called self induced p-type or n-type doping effect. These features have importance in the fabrication of nano-electronic devices based on the phosphorene/graphene heterostructures.

  19. Collective Behavior of a Spin-Aligned Gas of Interwell Excitons in Double Quantum Wells

    DEFF Research Database (Denmark)

    Larionov, A. V.; Bayer, M.; Hvam, Jørn Märcher

    2005-01-01

    The kinetics of a spin-aligned gas of interwell excitons in GaAs/AlGaAs double quantum wells (n–i–n heterostructure) is studied. The temperature dependence of the spin relaxation time for excitons, in which a photoexcited electron and hole are spatially separated between two adjacent quantum wells...

  20. Interface-engineered oxygen octahedral coupling in manganite heterostructures

    Science.gov (United States)

    Huijben, M.; Koster, G.; Liao, Z. L.; Rijnders, G.

    2017-12-01

    Control of the oxygen octahedral coupling (OOC) provides a large degree of freedom to manipulate physical phenomena in complex oxide heterostructures. Recently, local tuning of the tilt angle has been found to control the magnetic anisotropy in ultrathin films of manganites and ruthenates, while symmetry control can manipulate the metal insulator transition in nickelate thin films. The required connectivity of the octahedra across the heterostructure interface enforces a geometric constraint to the 3-dimensional octahedral network in epitaxial films. Such geometric constraint will either change the tilt angle to retain the connectivity of the corner shared oxygen octahedral network or guide the formation of a specific symmetry throughout the epitaxial film. Here, we will discuss the control of OOC in manganite heterostructures by interface-engineering. OOC driven magnetic and transport anisotropies have been realized in LSMO/NGO heterostructures. Competition between the interfacial OOC and the strain further away from the interface leads to a thickness driven sharp transition of the anisotropic properties. Furthermore, octahedral relaxation leading to a change of p-d hybridization driven by interfacial OOC appears to be the strongest factor in thickness related variations of magnetic and transport properties in epitaxial LSMO films on NGO substrates. The results unequivocally link the atomic structure near the interfaces to the macroscopic properties. The strong correlation between a controllable oxygen network and the functionalities will have significant impact on both fundamental research and technological application of correlated perovskite heterostructures. By controlling the interfacial OOC, it is possible to pattern in 3 dimensions the magnetization to achieve non-collinear magnetization in both in-plane and out of plane directions, thus making the heterostructures promising for application in orthogonal spin transfer devices, spin oscillators, and low

  1. Nonsequential multiphoton double ionization of He in intense laser - a QED approach

    International Nuclear Information System (INIS)

    Bhattacharyya, S.; Mazumder, Mina; Chakrabarti, J.; Faisal, F.H.M.

    2010-01-01

    The non-sequential muItiphoton double ionization (NSDI) of He in intense laser field is not yet completely understood, more so for spin resolved currents. We are tempted to use QED and Feynman diagram to obtain spin polarized currents. Hartree-Fock (HF) ground-state correlated wave function of He atom is considered in circularly polarized laser. In QED approach one of the electrons is directly ionized by photon absorption while the second electron is shaken off due to the change in the internal potential of the atom. In He-atom the two ionized electrons can only be in the singlet spin state. Spin-symmetric and spin-flip transitions are eventually possible for the direct and the shake-off electrons. In an ensemble of (HF type) He-atoms the ionized Volkov electrons may acquire 4 pairs of momenta indicating e-e correlation in the final state. Coulomb correction is taken care off through the Sommerfeld factor

  2. A high-finesse Fabry–Perot cavity with a frequency-doubled green laser for precision Compton polarimetry at Jefferson Lab

    International Nuclear Information System (INIS)

    Rakhman, A.; Hafez, M.; Nanda, S.; Benmokhtar, F.; Camsonne, A.; Cates, G.D.; Dalton, M.M.; Franklin, G.B.; Friend, M.; Michaels, R.W.; Nelyubin, V.; Parno, D.S.; Paschke, K.D.; Quinn, B.P.

    2016-01-01

    A high-finesse Fabry–Perot cavity with a frequency-doubled continuous wave green laser (532 nm) has been built and installed in Hall A of Jefferson Lab for high precision Compton polarimetry. The infrared (1064 nm) beam from a ytterbium-doped fiber amplifier seeded by a Nd:YAG nonplanar ring oscillator laser is frequency doubled in a single-pass periodically poled MgO:LiNbO_3 crystal. The maximum achieved green power at 5 W infrared pump power is 1.74 W with a total conversion efficiency of 34.8%. The green beam is injected into the optical resonant cavity and enhanced up to 3.7 kW with a corresponding enhancement of 3800. The polarization transfer function has been measured in order to determine the intra-cavity circular laser polarization within a measurement uncertainty of 0.7%. The PREx experiment at Jefferson Lab used this system for the first time and achieved 1.0% precision in polarization measurements of an electron beam with energy and current of 1.06 GeV and 50 μA.

  3. A high-finesse Fabry–Perot cavity with a frequency-doubled green laser for precision Compton polarimetry at Jefferson Lab

    Energy Technology Data Exchange (ETDEWEB)

    Rakhman, A., E-mail: rahim@ornl.gov [Syracuse University, Department of Physics, Syracuse, NY 13244 (United States); Research Accelerator Division, Spallation Neutron Source, Oak Ridge National Laboratory, Oak Ridge, TN 37831 (United States); Hafez, M. [Old Dominion University, Applied Research Center, Norfolk, VA 23529 (United States); Nanda, S. [Thomas Jefferson National Accelerator Facility, Newport News, VA 23606 (United States); Benmokhtar, F. [Carnegie Mellon University, Department of Physics, Pittsburgh, PA 15213 (United States); Duquesne University, Pittsburgh, PA 15282 (United States); Camsonne, A. [Thomas Jefferson National Accelerator Facility, Newport News, VA 23606 (United States); Cates, G.D. [University of Virginia, Department of Physics, Charlottesville, VA 22904 (United States); Dalton, M.M. [Thomas Jefferson National Accelerator Facility, Newport News, VA 23606 (United States); University of Virginia, Department of Physics, Charlottesville, VA 22904 (United States); Franklin, G.B. [Carnegie Mellon University, Department of Physics, Pittsburgh, PA 15213 (United States); Friend, M. [Carnegie Mellon University, Department of Physics, Pittsburgh, PA 15213 (United States); High Energy Accelerator Research Organization (KEK), Tsukuba, Ibaraki (Japan); Michaels, R.W. [Thomas Jefferson National Accelerator Facility, Newport News, VA 23606 (United States); Nelyubin, V. [University of Virginia, Department of Physics, Charlottesville, VA 22904 (United States); Parno, D.S. [Carnegie Mellon University, Department of Physics, Pittsburgh, PA 15213 (United States); University of Washington, Center for Experimental Nuclear Physics and Astrophysics and Department of Physics, Seattle, WA 98195 (United States); Paschke, K.D. [University of Virginia, Department of Physics, Charlottesville, VA 22904 (United States); Quinn, B.P. [Carnegie Mellon University, Department of Physics, Pittsburgh, PA 15213 (United States); and others

    2016-06-21

    A high-finesse Fabry–Perot cavity with a frequency-doubled continuous wave green laser (532 nm) has been built and installed in Hall A of Jefferson Lab for high precision Compton polarimetry. The infrared (1064 nm) beam from a ytterbium-doped fiber amplifier seeded by a Nd:YAG nonplanar ring oscillator laser is frequency doubled in a single-pass periodically poled MgO:LiNbO{sub 3} crystal. The maximum achieved green power at 5 W infrared pump power is 1.74 W with a total conversion efficiency of 34.8%. The green beam is injected into the optical resonant cavity and enhanced up to 3.7 kW with a corresponding enhancement of 3800. The polarization transfer function has been measured in order to determine the intra-cavity circular laser polarization within a measurement uncertainty of 0.7%. The PREx experiment at Jefferson Lab used this system for the first time and achieved 1.0% precision in polarization measurements of an electron beam with energy and current of 1.06 GeV and 50 μA.

  4. High-efficiency frequency doubling of continuous-wave laser light.

    Science.gov (United States)

    Ast, Stefan; Nia, Ramon Moghadas; Schönbeck, Axel; Lastzka, Nico; Steinlechner, Jessica; Eberle, Tobias; Mehmet, Moritz; Steinlechner, Sebastian; Schnabel, Roman

    2011-09-01

    We report on the observation of high-efficiency frequency doubling of 1550 nm continuous-wave laser light in a nonlinear cavity containing a periodically poled potassium titanyl phosphate crystal (PPKTP). The fundamental field had a power of 1.10 W and was converted into 1.05 W at 775 nm, yielding a total external conversion efficiency of 95±1%. The latter value is based on the measured depletion of the fundamental field being consistent with the absolute values derived from numerical simulations. According to our model, the conversion efficiency achieved was limited by the nonperfect mode matching into the nonlinear cavity and by the nonperfect impedance matching for the maximum input power available. Our result shows that cavity-assisted frequency conversion based on PPKTP is well suited for low-decoherence frequency conversion of quantum states of light.

  5. Spin transport properties of partially edge-hydrogenated MoS2 nanoribbon heterostructure

    International Nuclear Information System (INIS)

    Peng, Li; Yao, Kailun; Zhu, Sicong; Ni, Yun; Zu, Fengxia; Wang, Shuling; Guo, Bin; Tian, Yong

    2014-01-01

    We report ab initio calculations of electronic transport properties of heterostructure based on MoS 2 nanoribbons. The heterostructure consists of edge hydrogen-passivated and non-passivated zigzag MoS 2 nanoribbons (ZMoS 2 NR-H/ZMoS 2 NR). Our calculations show that the heterostructure has half-metallic behavior which is independent of the nanoribbon width. The opening of spin channels of the heterostructure depends on the matching of particular electronic orbitals in the Mo-dominated edges of ZMoS 2 NR-H and ZMoS 2 NR. Perfect spin filter effect appears at small bias voltages, and large negative differential resistance and rectifying effects are also observed in the heterostructure.

  6. Vacuum-evaporated ferroelectric films and heterostructures of vinylidene fluoride/trifluoroethylene copolymer

    Energy Technology Data Exchange (ETDEWEB)

    Draginda, Yu. A., E-mail: lbf@ns.crys.ras.ru; Yudin, S G; Lazarev, V V; Yablonskii, S V; Palto, S P [Russian Academy of Sciences, Shubnikov Institute of Crystallography (Russian Federation)

    2012-05-15

    The potential of the vacuum method for preparing ferroelectric films and photonic heterostructures from organic materials is studied. Vacuum-evaporated films of fluoropolymers and heterostructures on their basis are obtained and their ferroelectric and spectral properties are studied. In particular, homogeneous films of the well-known piezoelectric polymer polyvinylidene fluoride and ferroelectric material vinylidene fluoride/trifluoroethylene copolymer (P(VDF/TFE)) are produced. Experimental studies of vacuum-evaporated P(VDF/TFE) films confirmed their ferroelectric properties. The heterostructures composed of alternating layers of P(VDF/TFE) copolymer molecules and azodye molecules are fabricated by vacuum evaporation. Owing to the controlled layer thickness and a significant difference in the refractive indices of the P(VDF/TFE) copolymer and azodyes, these heterostructures exhibit properties of photonic crystals. This finding is confirmed by the occurrence of a photonic band in the absorption spectra of the heterostructures.

  7. Tunable emergent heterostructures in a prototypical correlated metal

    Science.gov (United States)

    Fobes, D. M.; Zhang, S.; Lin, S.-Z.; Das, Pinaki; Ghimire, N. J.; Bauer, E. D.; Thompson, J. D.; Harriger, L. W.; Ehlers, G.; Podlesnyak, A.; Bewley, R. I.; Sazonov, A.; Hutanu, V.; Ronning, F.; Batista, C. D.; Janoschek, M.

    2018-05-01

    At the interface between two distinct materials, desirable properties, such as superconductivity, can be greatly enhanced1, or entirely new functionalities may emerge2. Similar to in artificially engineered heterostructures, clean functional interfaces alternatively exist in electronically textured bulk materials. Electronic textures emerge spontaneously due to competing atomic-scale interactions3, the control of which would enable a top-down approach for designing tunable intrinsic heterostructures. This is particularly attractive for correlated electron materials, where spontaneous heterostructures strongly affect the interplay between charge and spin degrees of freedom4. Here we report high-resolution neutron spectroscopy on the prototypical strongly correlated metal CeRhIn5, revealing competition between magnetic frustration and easy-axis anisotropy—a well-established mechanism for generating spontaneous superstructures5. Because the observed easy-axis anisotropy is field-induced and anomalously large, it can be controlled efficiently with small magnetic fields. The resulting field-controlled magnetic superstructure is closely tied to the formation of superconducting6 and electronic nematic textures7 in CeRhIn5, suggesting that in situ tunable heterostructures can be realized in correlated electron materials.

  8. First-principles approach for superconducting slabs and heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Csire, Gabor [Wigner Research Centre for Physics, Budapest (Hungary)

    2016-07-01

    We present a fully ab-initio method to calculate the transition temperature for superconducting slabs and heterostructures. In the case of thin superconductor layers the electron-phonon interaction may change significantly. Therefore we calculate the layer dependent phonon spectrum to determine the layer dependence of the electron-phonon coupling for such systems. The phonon spectrum is than coupled to the Kohn-Sham-Bogoliubov-de Gennes equation via the McMillan-Hopfield parameter, and it is solved self-consistently. The theory is applied to niobium slabs and niobium-gold heterostructures. Based on these calculations we investigate both the dependence of the superconducting transition temperature on the thickness of superconducting slabs and the inverse proximity effect observed in thin superconducting heterostructures.

  9. Structural characterization of ultrathin Cr-doped ITO layers deposited by double-target pulsed laser ablation

    International Nuclear Information System (INIS)

    Cesaria, Maura; Caricato, Anna Paola; Leggieri, Gilberto; Luches, Armando; Martino, Maurizio; Maruccio, Giuseppe; Catalano, Massimo; Manera, Maria Grazia; Rella, Roberto; Taurino, Antonietta

    2011-01-01

    In this paper we report on the growth and structural characterization of very thin (20 nm) Cr-doped ITO films, deposited at room temperature by double-target pulsed laser ablation on amorphous silica substrates. The role of Cr atoms in the ITO matrix is carefully investigated with increasing doping content by transmission electron microscopy (TEM). Selected-area electron diffraction, conventional bright field and dark field as well as high-resolution TEM analyses, and energy dispersive x-ray spectroscopy demonstrate that (i) crystallization features occur despite the low growth temperature and small thickness, (ii) no chromium or chromium oxide secondary phases are detectable, regardless of the film doping levels, (iii) the films crystallize as crystalline flakes forming large-angle grain boundaries; (iv) the observed flakes consist of crystalline planes with local bending of the crystal lattice. Thickness and compositional information about the films are obtained by Rutherford back-scattering spectrometry. Results are discussed by considering the combined effects of growth temperature, smaller ionic radius of the Cr cation compared with the trivalent In ion, doping level, film thickness, the double-target doping technique and peculiarities of the pulsed laser deposition method.

  10. Structural characterization of ultrathin Cr-doped ITO layers deposited by double-target pulsed laser ablation

    Science.gov (United States)

    Cesaria, Maura; Caricato, Anna Paola; Leggieri, Gilberto; Luches, Armando; Martino, Maurizio; Maruccio, Giuseppe; Catalano, Massimo; Grazia Manera, Maria; Rella, Roberto; Taurino, Antonietta

    2011-09-01

    In this paper we report on the growth and structural characterization of very thin (20 nm) Cr-doped ITO films, deposited at room temperature by double-target pulsed laser ablation on amorphous silica substrates. The role of Cr atoms in the ITO matrix is carefully investigated with increasing doping content by transmission electron microscopy (TEM). Selected-area electron diffraction, conventional bright field and dark field as well as high-resolution TEM analyses, and energy dispersive x-ray spectroscopy demonstrate that (i) crystallization features occur despite the low growth temperature and small thickness, (ii) no chromium or chromium oxide secondary phases are detectable, regardless of the film doping levels, (iii) the films crystallize as crystalline flakes forming large-angle grain boundaries; (iv) the observed flakes consist of crystalline planes with local bending of the crystal lattice. Thickness and compositional information about the films are obtained by Rutherford back-scattering spectrometry. Results are discussed by considering the combined effects of growth temperature, smaller ionic radius of the Cr cation compared with the trivalent In ion, doping level, film thickness, the double-target doping technique and peculiarities of the pulsed laser deposition method.

  11. Structural characterization of ultrathin Cr-doped ITO layers deposited by double-target pulsed laser ablation

    Energy Technology Data Exchange (ETDEWEB)

    Cesaria, Maura; Caricato, Anna Paola; Leggieri, Gilberto; Luches, Armando; Martino, Maurizio; Maruccio, Giuseppe [Physics Department, University of Salento, Via Arnesano, 73100 Lecce (Italy); Catalano, Massimo; Manera, Maria Grazia; Rella, Roberto; Taurino, Antonietta, E-mail: antonietta.taurino@le.imm.cnr.it [Institute for Microelectronics and Microsystems, IMM-CNR, Via Monteroni, 73100 Lecce (Italy)

    2011-09-14

    In this paper we report on the growth and structural characterization of very thin (20 nm) Cr-doped ITO films, deposited at room temperature by double-target pulsed laser ablation on amorphous silica substrates. The role of Cr atoms in the ITO matrix is carefully investigated with increasing doping content by transmission electron microscopy (TEM). Selected-area electron diffraction, conventional bright field and dark field as well as high-resolution TEM analyses, and energy dispersive x-ray spectroscopy demonstrate that (i) crystallization features occur despite the low growth temperature and small thickness, (ii) no chromium or chromium oxide secondary phases are detectable, regardless of the film doping levels, (iii) the films crystallize as crystalline flakes forming large-angle grain boundaries; (iv) the observed flakes consist of crystalline planes with local bending of the crystal lattice. Thickness and compositional information about the films are obtained by Rutherford back-scattering spectrometry. Results are discussed by considering the combined effects of growth temperature, smaller ionic radius of the Cr cation compared with the trivalent In ion, doping level, film thickness, the double-target doping technique and peculiarities of the pulsed laser deposition method.

  12. Step-Tapered Active-Region Mid-Infrared Quantum Cascade Lasers and Novel Fabrication Processes for Buried Heterostructures

    Science.gov (United States)

    2015-07-28

    phase- locked arrays, buried heterostructures REPORT DOCUMENTATION PAGE 11. SPONSOR/MONITOR’S REPORT NUMBER(S) 10. SPONSOR/MONITOR’S ACRONYM(S) ARO...to realizing BH-QCLs than the conventional process. Moreover, new processes for achieving on-chip, large-emitting aperture QCL phase- locked arrays...Hsing Hsu, Edwin Ramayya, and Tzu-Hsuan Chang. Last but not least, the author would like to thank his families, including his parents and

  13. Physics and application of persistent spin helix state in semiconductor heterostructures

    Science.gov (United States)

    Kohda, Makoto; Salis, Gian

    2017-07-01

    In order to utilize the spin degree of freedom in semiconductors, control of spin states and transfer of the spin information are fundamental requirements for future spintronic devices and quantum computing. Spin orbit (SO) interaction generates an effective magnetic field for moving electrons and enables spin generation, spin manipulation and spin detection without using external magnetic field and magnetic materials. However, spin relaxation also takes place due to a momentum dependent SO-induced effective magnetic field. As a result, SO interaction is considered to be a double-edged sword facilitating spin control but preventing spin transport over long distances. The persistent spin helix (PSH) state solves this problem since uniaxial alignment of the SO field with SU(2) symmetry enables the suppression of spin relaxation while spin precession can still be controlled. Consequently, understanding the PSH becomes an important step towards future spintronic technologies for classical and quantum applications. Here, we review recent progress of PSH in semiconductor heterostructures and its device application. Fundamental physics of SO interaction and the conditions of a PSH state in semiconductor heterostructures are discussed. We introduce experimental techniques to observe a PSH and explain both optical and electrical measurements for detecting a long spin relaxation time and the formation of a helical spin texture. After emphasizing the bulk Dresselhaus SO coefficient γ, the application of PSH states for spin transistors and logic circuits are discussed.

  14. Determination of interfacial states in solid heterostructures using a variable-energy positron beam

    Science.gov (United States)

    Asoka kumar, Palakkal P. V.; Lynn, Kelvin G.

    1993-01-01

    A method and means is provided for characterizing interfacial electron states in solid heterostructures using a variable energy positron beam to probe the solid heterostructure. The method includes the steps of directing a positron beam having a selected energy level at a point on the solid heterostructure so that the positron beam penetrates into the solid heterostructure and causes positrons to collide with the electrons at an interface of the solid heterostructure. The number and energy of gamma rays emitted from the solid heterostructure as a result of the annihilation of positrons with electrons at the interface are detected. The data is quantified as a function of the Doppler broadening of the photopeak about the 511 keV line created by the annihilation of the positrons and electrons at the interface, preferably, as an S-parameter function; and a normalized S-parameter function of the data is obtained. The function of data obtained is compared with a corresponding function of the Doppler broadening of the annihilation photopeak about 511 keV for a positron beam having a second energy level directed at the same material making up a portion of the solid heterostructure. The comparison of these functions facilitates characterization of the interfacial states of electrons in the solid heterostructure at points corresponding to the penetration of positrons having the particular energy levels into the interface of the solid heterostructure. Accordingly, the invention provides a variable-energy non-destructive probe of solid heterostructures, such as SiO.sub.2 /Si, MOS or other semiconductor devices.

  15. Theory of semiconductor laser cooling

    Science.gov (United States)

    Rupper, Greg

    Recently laser cooling of semiconductors has received renewed attention, with the hope that a semiconductor cooler might be able to achieve cryogenic temperatures. In order to study semiconductor laser cooling at cryogenic temperatures, it is crucial that the theory include both the effects of excitons and the electron-hole plasma. In this dissertation, I present a theoretical analysis of laser cooling of bulk GaAs based on a microscopic many-particle theory of absorption and luminescence of a partially ionized electron-hole plasma. This theory has been analyzed from a temperature 10K to 500K. It is shown that at high temperatures (above 300K), cooling can be modeled using older models with a few parameter changes. Below 200K, band filling effects dominate over Auger recombination. Below 30K excitonic effects are essential for laser cooling. In all cases, excitonic effects make cooling easier then predicted by a free carrier model. The initial cooling model is based on the assumption of a homogeneous undoped semiconductor. This model has been systematically modified to include effects that are present in real laser cooling experiments. The following modifications have been performed. (1) Propagation and polariton effects have been included. (2) The effect of p-doping has been included. (n-doping can be modeled in a similar fashion.) (3) In experiments, a passivation layer is required to minimize non-radiative recombination. The passivation results in a npn heterostructure. The effect of the npn heterostructure on cooling has been analyzed. (4) The effect of a Gaussian pump beam was analyzed and (5) Some of the parameters in the cooling model have a large uncertainty. The effect of modifying these parameters has been analyzed. Most of the extensions to the original theory have only had a modest effect on the overall results. However we find that the current passivation technique may not be sufficient to allow cooling. The passivation technique currently used appears

  16. Effect of thermal annealing on the emission properties of heterostructures containing a quantum-confined GaAsSb layer

    Energy Technology Data Exchange (ETDEWEB)

    Dikareva, N. V., E-mail: dnat@ro.ru; Vikhrova, O. V.; Zvonkov, B. N. [Lobachevsky State University of Nizhni Novgorod, Physico-Technical Research Institute (Russian Federation); Malekhonova, N. V. [Lobachevsky State University of Nizhni Novgorod (Russian Federation); Nekorkin, S. M. [Lobachevsky State University of Nizhni Novgorod, Physico-Technical Research Institute (Russian Federation); Pirogov, A. V.; Pavlov, D. A. [Lobachevsky State University of Nizhni Novgorod (Russian Federation)

    2015-01-15

    Heterostructures containing single GaAsSb/GaAs quantum wells and bilayer GaAsSb/InGaAs quantum wells are produced by metal-organic vapor-phase epitaxy at atmospheric pressure. The growth temperature of the quantum-confined layers is 500–570°C. The structural quality of the samples and the quality of heterointerfaces of the quantum wells are studied by the high-resolution transmission electron microscopy of cross sections. The emission properties of the heterostructures are studied by photoluminescence measurements. The structures are subjected to thermal annealing under conditions chosen in accordance with the temperature and time of growth of the upper cladding p-InGaP layer during the formation of GaAs/InGaP laser structures with an active region containing quantum-confined GaAsSb layers. It is found that such heat treatment can have a profound effect on the emission properties of the active region, only if a bilayer GaAsSb/InGaAs quantum well is formed.

  17. Resistive switching effects in CeO2/La0.7(Sr0.1Ca0.9)0.3MnO3/Pt heterostructures prepared by pulse laser deposition method

    International Nuclear Information System (INIS)

    Chen, X.G.; Fu, J.B.; Li, L.Z.; Yun, C.; Zhao, H.; Zhang, X.F.; Wang, C.S.; Yang, Y.C.; Yang, J.B.

    2014-01-01

    The heterostructural junctions of CeO 2 /La 0.7 (Sr 0.1 Ca 0.9 ) 0.3 MnO 3 /Pt (CeO 2 /LSCMO/Pt) were prepared using pulse laser deposition technique. Their resistive switching (RS) behavior was investigated. As compared to the metal/manganite/Pt junction, the CeO 2 /LSCMO/Pt device displayed an improved switching characteristic. The RS effects with characteristics of bipolar, threshold, and complementary were realized by adjusting the thicknesses of the CeO 2 layer in the CeO 2 /LSCMO/Pt junctions. Under a higher external bias voltage, the threshold and complementary switching modes of the junctions could turn into bipolar switching mode. The switching behavior shows strong dependence on the O 2 partial pressure during the fabrication, indicating that the amount and behavior of the oxygen at the interface play an important role in the determination of the RS behavior. The observed switching behavior is related to the modification of the accumulation/depletion layers as well as the interfacial potential barrier due to the migration of the oxygen vacancies. - Highlights: • Heterostructure of CeO 2 /LSMO/Pt displayed an improved resistance switching characteristic. • Resistance switching with characteristics of bipolar, threshold and complementary was found. • Threshold and complementary switching mode could turn into bipolar switching mode. • Switching behavior is related to the modification of the accumulation/depletion layers. • Interfacial potential barrier due to the migration of oxygen vacancies was proposed

  18. Third order mode laser diode: design of a twin photon source

    International Nuclear Information System (INIS)

    Ducci, S.; Berger, V.; Rossi, A. de; Ortiz, V.; Calligaro, M.; Vinter, B.; Nagle, J.; Berger, V.

    2004-01-01

    We demonstrate the lasing action on a third order waveguide mode in a laser diode. The AlGaAs heterostructure has been designed to achieve a parametric emission of photons pairs through modal phase matching. This device is very compact and does not generate coupling loss between the laser source and the non-linear waveguide. It is the first step on the way to design a twin photon micro-source. (A.C.)

  19. Development of the double-pulse technique to improve the analytical performance of Laser Induced Breakdown Spectroscopy (LIBS) on solids: Nuclear and geological applications

    International Nuclear Information System (INIS)

    Gautier, C.

    2005-10-01

    The double-pulse technique has been developed to improve the analytical performance of Laser Ablation coupled to Optical Emission Spectroscopy (LA/OES). This approach relies on the addition of a second time-resolved laser pulse to the classical LA/OES system. It has been studied on aluminium alloys according to different geometries of the two laser beams (orthogonal and collinear geometries) before being applied to different materials (synthetic glass, rock, steel, sodium chloride). The increase in emission intensity depends on the temporal parameters, on the excitation energy level of the emission line, on the concentration of the studied element and on the analyzed matrix. The double-pulse LA/OES technique can be particularly interesting to improve the sensitivity towards vitreous matrices containing elements emitting lines with high excitation energy levels. (author)

  20. Electronic and optical properties of diamond/organic semiconductor heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Gajewski, Wojciech; Garrido, Jose; Niedermeier, Martin; Stutzmann, Martin [Walter Schottky Institute, TU Muenchen, Am Coulombwall 3, 85748 Garching (Germany); Williams, Oliver; Haenen, Ken [Institute for Materials Research, University of Hasselt, Wetenschapspark 1, BE-3590 Diepenbeek (Belgium)

    2007-07-01

    Different diamond substrates (single crystalline: SCD, poly-crystalline: PCD and nano-crystalline: NCD) were used to investigate the electronic and optical properties of the diamond/organic semiconductor heterostructures. Layers of a poly[ethynyl-(2-decyloxy-5methoxy)benzene] - PEB, pentacene and 4-nitro-biphenyl-4-diazonium cations - Ph-Ph-NO{sub 2} were prepared by spin coating, thermal evaporation and grafting, respectively. The measurements of the electronic transport along the organic layer were performed using a Hg probe as well as Hall effect measurements in the temperature range 70-400 K. The I-V characteristics of the B-doped diamond/organic semiconductor heterostructures were measured at room temperature by means of the Hg probe. Undoped IIa and undoped PCD films were used for a study of the optical and optoelectronic properties of prepared heterostructures. The influence of the organic layer homogeneity and layer thickness on the optical properties will be discussed. Furthermore, preliminary data on perpendicular and parallel transport in the heterostructures layer will be reported.

  1. Temperature and composition profile during double-track laser cladding of H13 tool steel

    Science.gov (United States)

    He, X.; Yu, G.; Mazumder, J.

    2010-01-01

    Multi-track laser cladding is now applied commercially in a range of industries such as automotive, mining and aerospace due to its diversified potential for material processing. The knowledge of temperature, velocity and composition distribution history is essential for a better understanding of the process and subsequent microstructure evolution and properties. Numerical simulation not only helps to understand the complex physical phenomena and underlying principles involved in this process, but it can also be used in the process prediction and system control. The double-track coaxial laser cladding with H13 tool steel powder injection is simulated using a comprehensive three-dimensional model, based on the mass, momentum, energy conservation and solute transport equation. Some important physical phenomena, such as heat transfer, phase changes, mass addition and fluid flow, are taken into account in the calculation. The physical properties for a mixture of solid and liquid phase are defined by treating it as a continuum media. The velocity of the laser beam during the transition between two tracks is considered. The evolution of temperature and composition of different monitoring locations is simulated.

  2. A radio-frequency single-electron transistor based on an InAs/InP heterostructure nanowire

    DEFF Research Database (Denmark)

    Nilsson, Henrik A.; Duty, Tim; Abay, Simon

    2008-01-01

    We demonstrate radio frequency single-electron transistors fabricated from epitaxially grown InAs/InP heterostructure nanowires. Two sets of double-barrier wires with different barrier thicknesses were grown. The wires were suspended 15 nm above a metal gate electrode. Electrical measurements...... on a high-resistance nanowire showed regularly spaced Coulomb oscillations at a gate voltage from −0.5 to at least 1.8 V. The charge sensitivity was measured to 32 µerms Hz−1/2 at 1.5 K. A low-resistance single-electron transistor showed regularly spaced oscillations only in a small gate-voltage region just...

  3. Portable double-sided pulsed laser heating system for time-resolved geoscience and materials science applications.

    Science.gov (United States)

    Aprilis, G; Strohm, C; Kupenko, I; Linhardt, S; Laskin, A; Vasiukov, D M; Cerantola, V; Koemets, E G; McCammon, C; Kurnosov, A; Chumakov, A I; Rüffer, R; Dubrovinskaia, N; Dubrovinsky, L

    2017-08-01

    A portable double-sided pulsed laser heating system for diamond anvil cells has been developed that is able to stably produce laser pulses as short as a few microseconds with repetition frequencies up to 100 kHz. In situ temperature determination is possible by collecting and fitting the thermal radiation spectrum for a specific wavelength range (particularly, between 650 nm and 850 nm) to the Planck radiation function. Surface temperature information can also be time-resolved by using a gated detector that is synchronized with the laser pulse modulation and space-resolved with the implementation of a multi-point thermal radiation collection technique. The system can be easily coupled with equipment at synchrotron facilities, particularly for nuclear resonance spectroscopy experiments. Examples of applications include investigations of high-pressure high-temperature behavior of iron oxides, both in house and at the European Synchrotron Radiation Facility using the synchrotron Mössbauer source and nuclear inelastic scattering.

  4. OPENING ADDRESS: Heterostructures in Semiconductors

    Science.gov (United States)

    Grimmeiss, Hermann G.

    1996-01-01

    Good morning, Gentlemen! On behalf of the Nobel Foundation, I should like to welcome you to the Nobel Symposium on "Heterostructures in Semiconductors". It gives me great pleasure to see so many colleagues and old friends from all over the world in the audience and, in particular, to bid welcome to our Nobel laureates, Prof. Esaki and Prof. von Klitzing. In front of a different audience I would now commend the scientific and technological importance of heterostructures in semiconductors and emphatically emphasise that heterostructures, as an important contribution to microelectronics and, hence, information technology, have changed societies all over the world. I would also mention that information technology is one of the most important global key industries which covers a wide field of important areas each of which bears its own character. Ever since the invention of the transistor, we have witnessed a fantastic growth in semiconductor technology, leading to more complex functions and higher densities of devices. This development would hardly be possible without an increasing understanding of semiconductor materials and new concepts in material growth techniques which allow the fabrication of previously unknown semiconductor structures. But here and today I will not do it because it would mean to carry coals to Newcastle. I will therefore not remind you that heterostructures were already suggested and discussed in detail a long time before proper technologies were available for the fabrication of such structures. Now, heterostructures are a foundation in science and part of our everyday life. Though this is certainly true, it is nevertheless fair to say that not all properties of heterostructures are yet understood and that further technologies have to be developed before a still better understanding is obtained. The organisers therefore hope that this symposium will contribute not only to improving our understanding of heterostructures but also to opening new

  5. Radiative and interfacial recombination in CdTe heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Swartz, C. H., E-mail: craig.swartz@txstate.edu; Edirisooriya, M.; LeBlanc, E. G.; Noriega, O. C.; Jayathilaka, P. A. R. D.; Ogedengbe, O. S.; Hancock, B. L.; Holtz, M.; Myers, T. H. [Materials Science, Engineering, and Commercialization Program, Texas State University, 601 University Dr., San Marcos, Texas 78666 (United States); Zaunbrecher, K. N. [National Renewable Energy Laboratory, 15013 Denver West Parkway, Mississippi RSF200, Golden, Colorado 80401 (United States)

    2014-12-01

    Double heterostructures (DH) were produced consisting of a CdTe film between two wide band gap barriers of CdMgTe alloy. A combined method was developed to quantify radiative and non-radiative recombination rates by examining the dependence of photoluminescence (PL) on both excitation intensity and time. The measured PL characteristics, and the interface state density extracted by modeling, indicate that the radiative efficiency of CdMgTe/CdTe DHs is comparable to that of AlGaAs/GaAs DHs, with interface state densities in the low 10{sup 10 }cm{sup −2} and carrier lifetimes as long as 240 ns. The radiative recombination coefficient of CdTe is found to be near 10{sup −10} cm{sup 3}s{sup −1}. CdTe film growth on bulk CdTe substrates resulted in a homoepitaxial interface layer with a high non-radiative recombination rate.

  6. Piroxicam and laser phototherapy in the treatment of TMJ arthralgia: a double-blind randomised controlled trial.

    Science.gov (United States)

    de Carli, M L; Guerra, M B; Nunes, T B; di Matteo, R C; de Luca, C E P; Aranha, A C C; Bolzan, M C; Witzel, A L

    2013-03-01

    This study aimed to evaluate the efficacy of piroxicam associated with low-level laser therapy compared with single therapies in 32 patients presenting temporomandibular joint arthralgia in a random and double-blind research design. The sample, divided into laser + piroxicam, laser + placebo piroxicam and placebo laser + piroxicam groups, was submitted to the treatment with infrared laser (830 nm, 100 mW, 28 s, 100 J cm(-2) ) at 10 temporomandibular joint and muscle points on each side during four sessions concomitant to take one capsule a day of piroxicam 20 mg during 10 days. The treatment was evaluated throughout four sessions and 30 days follow-up through visual analogue scale (VAS), maximum mouth opening and joint and muscle (temporal and masseter) pain on palpation. The results showed that all the study groups had a significant improvement in the VAS scores (P Piroxicam was effective in the reduction of joint and muscle pain on palpation (P piroxicam was not more effective than single therapies in the treatment of temporomandibular joint arthralgia. The use of piroxicam was more effective in the following 30 days. © 2012 Blackwell Publishing Ltd.

  7. Enhancement-mode two-channel triple quantum dot from an undoped Si/Si0.8Ge0.2 quantum well hetero-structure.

    Energy Technology Data Exchange (ETDEWEB)

    Studenikin, S. A.; Gaudreau, L.; Kataoka, K.; Austing, D. G.; Lu, Tzu-Ming; Luhman, Dwight; Bethke, Donald Thomas; Wanke, Michael; Lilly, Michael; Carroll, Malcolm S.; Sachrajda, A. S.

    2017-12-01

    We demonstrate coupled triple dot operation and charge sensing capability for the recently introduced quantum dot technology employing undoped Si/Si0.8Ge0.2 hetero-structures which also incorporate a single metal-gate layer to simplify fabrication [T. M. Lu et al., Appl. Phys. Lett. 109, 093102 (2016)]. Si/SiGe hetero-structures with a Ge concentration of 20% rather than the more usual 30% typically encountered offer higher electron mobility. The devices consist of two in-plane parallel electron channels that host a double dot in one channel and a single dot in the other channel. In a device where the channels are sufficiently close a triple dot in a triangular configuration is induced leading to regions in the charge stability diagram where three addition lines of different slope approach each other and anti-cross. In a device where the channels are further apart the single dot charge-senses the double dot with relative change of ~2% in the sensor current. We also highlight temporal drifting and metastability of the Coulomb oscillations. These effects are induced if the temperature environment of the device is not kept constant and arise from non-equilibrium charge redistribution and subsequent slow recovery.

  8. Photoluminescence energy transitions in GaAs-Ga1-xAlxAs double quantum wells: Electric and magnetic fields and hydrostatic pressure effects

    International Nuclear Information System (INIS)

    Lopez, S.Y.; Mora-Ramos, M.E.; Duque, C.A.

    2009-01-01

    The photoluminescence energy transitions in GaAs-Ga 1-x Al x As coupled double quantum wells are presented by considering the simultaneous effects of applied electric and magnetic fields and hydrostatic pressure. Calculations have been made in the framework of the effective mass and parabolic band approximations and using a variational procedure. The electric field is taken to be oriented along the growth direction of the heterostructure whereas for the magnetic field both in-plane and in-growth directions have been considered. The results show that the hydrostatic pressure and the applied electric field are two useful tools to tune the direct and indirect exciton transitions in such heterostructures. Our results are in good agreement with previous experimental findings in double quantum wells under applied electric field and hydrostatic pressure.

  9. Comparison of trap characteristics between AlGaN/GaN and AlGaN/InGaN/GaN heterostructure by frequency dependent conductance measurement

    International Nuclear Information System (INIS)

    Chakraborty, Apurba; Biswas, Dhrubes

    2015-01-01

    Frequency dependent conductance measurement is carried out to observe the trapping effect in AlGaN/InGaN/GaN double heterostructure and compared that with conventional AlGaN/GaN single heterostructure. It is found that the AlGaN/InGaN/GaN diode structure does not show any trapping effect, whereas single heterostructure AlGaN/GaN diode suffers from two kinds of trap energy states in near depletion to higher negative voltage bias region. This conductance behaviour of AlGaN/InGaN/GaN heterostructure is owing to more Fermi energy level shift from trap energy states at AlGaN/InGaN junction compare to single AlGaN/GaN heterostructure and eliminates the trapping effects. Analysis yielded interface trap energy state in AlGaN/GaN is to be with time constant of (33.8–76.5) μs and trap density of (2.38–0.656) × 10 12  eV −1  cm −2 in −3.2 to −4.8 V bias region, whereas for AlGaN/InGaN/GaN structure no interface energy states are found and the extracted surface trap energy concentrations and time constants are (5.87–4.39) ×10 10  eV −1  cm −2 and (17.8–11.3) μs, respectively, in bias range of −0.8–0.0 V

  10. Quantum engineering of transistors based on 2D materials heterostructures

    Science.gov (United States)

    Iannaccone, Giuseppe; Bonaccorso, Francesco; Colombo, Luigi; Fiori, Gianluca

    2018-03-01

    Quantum engineering entails atom-by-atom design and fabrication of electronic devices. This innovative technology that unifies materials science and device engineering has been fostered by the recent progress in the fabrication of vertical and lateral heterostructures of two-dimensional materials and by the assessment of the technology potential via computational nanotechnology. But how close are we to the possibility of the practical realization of next-generation atomically thin transistors? In this Perspective, we analyse the outlook and the challenges of quantum-engineered transistors using heterostructures of two-dimensional materials against the benchmark of silicon technology and its foreseeable evolution in terms of potential performance and manufacturability. Transistors based on lateral heterostructures emerge as the most promising option from a performance point of view, even if heterostructure formation and control are in the initial technology development stage.

  11. Quantum engineering of transistors based on 2D materials heterostructures.

    Science.gov (United States)

    Iannaccone, Giuseppe; Bonaccorso, Francesco; Colombo, Luigi; Fiori, Gianluca

    2018-03-01

    Quantum engineering entails atom-by-atom design and fabrication of electronic devices. This innovative technology that unifies materials science and device engineering has been fostered by the recent progress in the fabrication of vertical and lateral heterostructures of two-dimensional materials and by the assessment of the technology potential via computational nanotechnology. But how close are we to the possibility of the practical realization of next-generation atomically thin transistors? In this Perspective, we analyse the outlook and the challenges of quantum-engineered transistors using heterostructures of two-dimensional materials against the benchmark of silicon technology and its foreseeable evolution in terms of potential performance and manufacturability. Transistors based on lateral heterostructures emerge as the most promising option from a performance point of view, even if heterostructure formation and control are in the initial technology development stage.

  12. YCOB lasers

    International Nuclear Information System (INIS)

    Richardson, Martin; Hammons, Dennis; Eichenholz, Jason; Chai, Bruce; Ye, Qing; Jang, Won; Shah, Lawrence

    1999-01-01

    We review new developments with a new laser host material, YCa 4 O(BO 3 ) 3 or YCOB. Lasers based on this host material will open new opportunities for the development of compact, high-power, frequency-agile visible and near IR laser sources, as well as sources for ultrashort pulses. Efficient diode-pumped laser action with both Nd-doped and Yb-doped YCOB has already been demonstrated. Moreover, since these materials are biaxial, and have high nonlinear optical coefficients, they have become the first laser materials available as efficient self-frequency-doubled lasers, capable of providing tunable laser emission in several regions of the visible spectrum. Self-frequency doubling eliminates the need for inclusion of a nonlinear optical element within or external to the laser resonator. These laser materials possess excellent thermal and optical properties, have high laser-damage thresholds, and can be grown to large sizes. In addition they are non-hygroscopic. They therefore possess all the characteristics necessary for laser materials required in rugged, compact systems. Here we summarize the rapid progress made in the development of this new class of lasers, and review their potential for a number of applications. (author)

  13. MOVPE growth and characterization of (In,Ga)N quantum structures for laser diodes emitting at 440 nm

    Energy Technology Data Exchange (ETDEWEB)

    Hoffmann, Veit

    2011-04-18

    The presented work describes the metal organic vapor phase epitaxy and characterization of nitride-based quantum structures which are used in laser heterostructures emitting in the wavelength range between 400 nm and 440 nm. Aiming at current injection and optically pumped laser structures with low threshold current or respectively threshold power densities, the device properties were correlated with the material properties of the indium gallium nitride (InGaN) active region. Furthermore, the influence of the active region and waveguide heterostructure layout on the material gain as well as the modal gain was investigated. In order to understand the InGaN growth process and the formation of structural imperfections, 15 nm-100 nm thick InGaN single layers were deposited on gallium nitride (GaN) on sapphire substrates and analyzed subsequently. It turned out that the spiral pattern of the growth edges around screw dislocations, threading from the substrate to the growth surface, and the formation of additional V-shaped surface defects are the main cause for the deterioration of the crystal perfection of the InGaN. As a result of the transition from a layer-by-layer to a 3D growth regime stable facets with preferred indium incorporation are formed that increase the lateral variation of the indium mole fraction in the layer. The higher indium incorporation at the facets is explained by dynamical elasticity theory and proven by the growth and characterization of InGaN layers on differently oriented GaN. The material properties of the InGaN quantum wells were correlated with laser device properties using 400 nm laser structures: In the case of thin quantum wells the 3D growth results in a lateral variation of the band gap due to variations of the indium mole fraction and the well width. Systematical investigations of laser structures with different band gap fluctuations show an increase of the threshold power density as the lateral variation of the band gap increases. It

  14. Double ionization of nitrogen molecules in orthogonal two-color femtosecond laser fields

    Science.gov (United States)

    Song, Qiying; Li, Hui; Wang, Junping; Lu, Peifen; Gong, Xiaochun; Ji, Qinying; Lin, Kang; Zhang, Wenbin; Ma, Junyang; Li, Hanxiao; Zeng, Heping; He, Feng; Wu, Jian

    2018-04-01

    Double ionization of nitrogen molecules in orthogonally polarized two-color femtosecond laser fields is investigated by varying the relative intensity between the fundamental wave (FW) and its second harmonic (SH) components. The yield ratios of the double ionization channels, i.e., the non-dissociative {{{{N}}}2}2+ and Coulomb exploded (N+, N+), to the singly charged N2 + channel exhibit distinct dependences on the relative strength between the FW and SH fields. As the intensity ratio of SH to FW increases, the yield ratio of (N+, N+)/N2 + gradually increases, while the ratio of {{{{N}}}2}2+/N2 + first descends and then increases constituting a valley shape which is similar to the behavior of Ar2+/Ar+ observed in the same experimental condition. Based on the classical trajectory simulations, we found that the different characteristics of the two doubly ionized channels stem from two mechanisms, i.e., the {{{{N}}}2}2+ is mostly accessed by the (e, 2e) impact ionization while the recollision-induced excitation with subsequent ionization plays an important role in producing the (N+, N+) channel.

  15. Observation of double resonant laser induced transitions in the $v = n - l - 1 = 2$ metastable cascade of antiprotonic helium-4 atoms

    CERN Document Server

    Hayano, R S; Tamura, H; Torii, H A; Hori, Masaki; Maas, F E; Morita, N; Kumakura, M; Sugai, I; Hartmann, F J; Daniel, H; Von Egidy, T; Ketzer, B; Pohl, R; Horváth, D; Eades, John; Widmann, E; Yamazaki, T

    1997-01-01

    A new laser-induced resonant transition in the $v=n-l-1=2$ metastable cascade of antiprotonic $^4$He atoms has been found by using a double resonance technique. This was done by setting the first laser to the already known 470.724 nm resonance ($(n,l)=(37,34)\\rightarrow (36,33)$), while the $(38,35)\\rightarrow (37,34)$ transition was searched for with the second laser. The resonant transition was found at wavelength of 529.622$\\pm$0.003 nm, showing excellent agreement with a recent prediction of Korobov.

  16. Heterostructures based on two-dimensional layered materials and their potential applications

    KAUST Repository

    Li, Ming-yang; Chen, Chang-Hsiao; Shi, Yumeng; Li, Lain-Jong

    2015-01-01

    The development of two-dimensional (2D) layered materials is driven by fundamental interest and their potential applications. Atomically thin 2D materials provide a wide range of basic building blocks with unique electrical, optical, and thermal properties which do not exist in their bulk counterparts. The van der Waals interlayer interaction enables the possibility to exfoliate and reassemble different 2D materials into arbitrarily and vertically stacked heterostructures. Recently developed vapor phase growth of 2D materials further paves the way of directly synthesizing vertical and lateral heterojunctions. This review provides insights into the layered 2D heterostructures, with a concise introduction to preparative approaches for 2D materials and heterostructures. These unique 2D heterostructures have abundant implications for many potential applications.

  17. Heterostructures based on two-dimensional layered materials and their potential applications

    KAUST Repository

    Li, Ming-yang

    2015-12-04

    The development of two-dimensional (2D) layered materials is driven by fundamental interest and their potential applications. Atomically thin 2D materials provide a wide range of basic building blocks with unique electrical, optical, and thermal properties which do not exist in their bulk counterparts. The van der Waals interlayer interaction enables the possibility to exfoliate and reassemble different 2D materials into arbitrarily and vertically stacked heterostructures. Recently developed vapor phase growth of 2D materials further paves the way of directly synthesizing vertical and lateral heterojunctions. This review provides insights into the layered 2D heterostructures, with a concise introduction to preparative approaches for 2D materials and heterostructures. These unique 2D heterostructures have abundant implications for many potential applications.

  18. Effective laser-induced breakdown spectroscopy (LIBS) detection using double pulse at optimum configuration.

    Science.gov (United States)

    Choi, Soo Jin; Yoh, Jack J

    2011-08-01

    A short laser pulse is irradiated on a sample to create a highly energetic plasma that emits light of a specific peak wavelength according to the material. By identifying different peaks for the analyzed samples, their chemical composition can be rapidly determined. The characteristics of the laser-induced breakdown spectroscopy (LIBS) plasma are strongly dependent on the ambient conditions. Research aimed at enhancing LIBS intensity is of great benefit in advancing LIBS for the exploration of harsh environments. By using double-pulse LIBS, the signal intensity of Al and Ca lines was enhanced by five times compared to the single-pulse signal. Also, the angles of the target and detector are adjusted to simulate samples of arbitrary shape. We verified that there exists an optimal angle at which specific elements of a test sample may be detected with stronger signal intensity. We provide several optimum configurations for the LIBS system for maximizing the signal intensity for the analysis of a nonstandard aluminum sample.

  19. Continuous-wave yellow-green laser at 0.56  μm based on frequency doubling of a diode-end-pumped ceramic Nd:YAG laser.

    Science.gov (United States)

    Yao, Wenming; Gao, Jing; Zhang, Long; Li, Jiang; Tian, Yubing; Ma, Yufei; Wu, Xiaodong; Ma, Gangfei; Yang, Jianming; Pan, Yubai; Dai, Xianjin

    2015-06-20

    We present what is, to the best of our knowledge, the first report on yellow-green laser generation based on the frequency doubling of the 1.1 μm transitions in Nd:YAG ceramics. By employing an 885 nm diode laser as the end-pumping source and a lithium triborate crystal as the frequency doubler, the highest continuous wave output powers of 1.4, 0.5, and 1.1 W at 556, 558, and 561 nm are achieved, respectively. These result in optical-to-optical efficiencies of 6.9%, 2.5%, and 5.4% with respect to the absorbed pump power, respectively.

  20. Electron scattering times in ZnO based polar heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Falson, J., E-mail: j.falson@fkf.mpg.de [Department of Applied Physics and Quantum-Phase Electronics Center (QPEC), The University of Tokyo, Tokyo 113-8656 (Japan); Department of Advanced Materials Science, The University of Tokyo, Kashiwa 277-8561 (Japan); Max Planck Institute for Solid State Research, D-70569 Stuttgart (Germany); Kozuka, Y. [Department of Applied Physics and Quantum-Phase Electronics Center (QPEC), The University of Tokyo, Tokyo 113-8656 (Japan); Smet, J. H. [Max Planck Institute for Solid State Research, D-70569 Stuttgart (Germany); Arima, T. [Department of Advanced Materials Science, The University of Tokyo, Kashiwa 277-8561 (Japan); RIKEN Center for Emergent Matter Science (CEMS), Wako 351-0198 (Japan); Tsukazaki, A. [Institute for Materials Research, Tohoku University, Sendai 980-8577 (Japan); PRESTO, Japan Science and Technology Agency (JST), Tokyo 102-0075 (Japan); Kawasaki, M. [Department of Applied Physics and Quantum-Phase Electronics Center (QPEC), The University of Tokyo, Tokyo 113-8656 (Japan); RIKEN Center for Emergent Matter Science (CEMS), Wako 351-0198 (Japan)

    2015-08-24

    The remarkable historic advances experienced in condensed matter physics have been enabled through the continued exploration and proliferation of increasingly richer and cleaner material systems. In this work, we report on the scattering times of charge carriers confined in state-of-the-art MgZnO/ZnO heterostructures displaying electron mobilities in excess of 10{sup 6} cm{sup 2}/V s. Through an examination of low field quantum oscillations, we obtain the effective mass of charge carriers, along with the transport and quantum scattering times. These times compare favorably with high mobility AlGaAs/GaAs heterostructures, suggesting the quality of MgZnO/ZnO heterostructures now rivals that of traditional semiconductors.

  1. Harmonic mode-locking using the double interval technique in quantum dot lasers.

    Science.gov (United States)

    Li, Yan; Chiragh, Furqan L; Xin, Yong-Chun; Lin, Chang-Yi; Kim, Junghoon; Christodoulou, Christos G; Lester, Luke F

    2010-07-05

    Passive harmonic mode-locking in a quantum dot laser is realized using the double interval technique, which uses two separate absorbers to stimulate a specific higher-order repetition rate compared to the fundamental. Operating alone these absorbers would otherwise reinforce lower harmonic frequencies, but by operating together they produce the harmonic corresponding to their least common multiple. Mode-locking at a nominal 60 GHz repetition rate, which is the 10(th) harmonic of the fundamental frequency of the device, is achieved unambiguously despite the constraint of a uniformly-segmented, multi-section device layout. The diversity of repetition rates available with this method is also discussed.

  2. Advanced Semiconductor Heterostructures Novel Devices, Potential Device Applications and Basic Properties

    CERN Document Server

    Stroscio, Michael A

    2003-01-01

    This volume provides valuable summaries on many aspects of advanced semiconductor heterostructures and highlights the great variety of semiconductor heterostructures that has emerged since their original conception. As exemplified by the chapters in this book, recent progress on advanced semiconductor heterostructures spans a truly remarkable range of scientific fields with an associated diversity of applications. Some of these applications will undoubtedly revolutionize critically important facets of modern technology. At the heart of these advances is the ability to design and control the pr

  3. All-solid-state cw frequency-doubling Nd:YLiF4/LBO blue laser with 4.33 W output power at 454 nm under in-band diode pumping at 880 nm.

    Science.gov (United States)

    Lü, Yanfei; Zhang, Xihe; Cheng, Weibo; Xia, Jing

    2010-07-20

    We generated efficient blue laser output at 454 nm by intracavity frequency doubling of a continuous-wave (cw) diode-pumped Nd:YLiF(4) (Nd:YLF) laser at 908 nm based on the (4)F(3/2)-(4)I(9/2) transition. With 32.8 W of incident pump power at 880 nm and the frequency-doubling crystal LiB(3)O(5), a level as high as 4.33 W of cw output power at 454 nm is achieved, corresponding to an optical conversion efficiency of 13.2% with respect to the incident pump power. To the best of our knowledge, this is the first blue laser at 454 nm generated by intracavity frequency doubling of a diode-pumped Nd:YLF.

  4. Quantum mechanical solver for confined heterostructure tunnel field-effect transistors

    Energy Technology Data Exchange (ETDEWEB)

    Verreck, Devin, E-mail: devin.verreck@imec.be; Groeseneken, Guido [imec, Kapeldreef 75, 3001 Leuven (Belgium); Department of Electrical Engineering, KU Leuven, 3001 Leuven (Belgium); Van de Put, Maarten; Sorée, Bart; Magnus, Wim [imec, Kapeldreef 75, 3001 Leuven (Belgium); Departement of Physics, Universiteit Antwerpen, 2020 Antwerpen (Belgium); Verhulst, Anne S.; Collaert, Nadine; Thean, Aaron [imec, Kapeldreef 75, 3001 Leuven (Belgium); Vandenberghe, William G. [Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, Texas 75080 (United States)

    2014-02-07

    Heterostructure tunnel field-effect transistors (HTFET) are promising candidates for low-power applications in future technology nodes, as they are predicted to offer high on-currents, combined with a sub-60 mV/dec subthreshold swing. However, the effects of important quantum mechanical phenomena like size confinement at the heterojunction are not well understood, due to the theoretical and computational difficulties in modeling realistic heterostructures. We therefore present a ballistic quantum transport formalism, combining a novel envelope function approach for semiconductor heterostructures with the multiband quantum transmitting boundary method, which we extend to 2D potentials. We demonstrate an implementation of a 2-band version of the formalism and apply it to study confinement in realistic heterostructure diodes and p-n-i-n HTFETs. For the diodes, both transmission probabilities and current densities are found to decrease with stronger confinement. For the p-n-i-n HTFETs, the improved gate control is found to counteract the deterioration due to confinement.

  5. Short-Term Effect of Laser Acupuncture on Lower Back Pain: A Randomized, Placebo-Controlled, Double-Blind Trial

    Directory of Open Access Journals (Sweden)

    Jae-Young Shin

    2015-01-01

    Full Text Available Purpose. This trial was performed to investigate the efficacy of laser acupuncture for the alleviation of lower back pain. Methods. This was a randomized, placebo-controlled, double-blind trial. Fifty-six participants were randomly assigned to either the laser acupuncture group (n=28 or the sham laser acupuncture group (n=28. Participants in both groups received three treatment sessions over the course of one week. Thirteen acupuncture points were selected. The visual analogue scale for pain, pressure pain threshold, Patient Global Impression of Change, and Euro-Quality-of-Life Five Dimensions questionnaire (Korean version were used to evaluate the effect of laser acupuncture treatment on lower back pain. Results. There were no significant differences in any outcome between the two groups, although the participants in both groups showed a significant improvement in each assessed parameter relative to the baseline values. Conclusion. Although there was no significant difference in outcomes between the two groups, the results suggest that laser acupuncture can provide effective pain alleviation and can be considered an option for relief from lower back pain. Further studies using long-term intervention, a larger sample size, and rigorous methodology are required to clarify the effect of laser acupuncture on lower back pain.

  6. Fatigue and retention in ferroelectric Y-Ba-Cu-O/Pb-Zr-Ti-O/Y-Ba-Cu-O heterostructures

    Science.gov (United States)

    Ramesh, R.; Chan, W. K.; Wilkens, B.; Gilchrist, H.; Sands, T.; Tarascon, J. M.; Keramidas, V. G.; Fork, D. K.; Lee, J.; Safari, A.

    1992-09-01

    Fatigue and retention characteristics of ferroelectric lead zirconate titanate thin films grown with Y-Ba-Cu-O(YBCO) thin-film top and bottom electrodes are found to be far superior to those obtained with conventional Pt top electrodes. The heterostructures reported here have been grown in situ by pulsed laser deposition on yttria-stabilized ZrO2 buffer [100] Si and on [001] LaAlO3. Both the a- and c-axis orientations of the YBCO lattice have been used as electrodes. They were prepared using suitable changes in growth conditions.

  7. Barrier inhomogeneities at vertically stacked graphene-based heterostructures.

    Science.gov (United States)

    Lin, Yen-Fu; Li, Wenwu; Li, Song-Lin; Xu, Yong; Aparecido-Ferreira, Alex; Komatsu, Katsuyoshi; Sun, Huabin; Nakaharai, Shu; Tsukagoshi, Kazuhito

    2014-01-21

    The integration of graphene and other atomically flat, two-dimensional materials has attracted much interest and been materialized very recently. An in-depth understanding of transport mechanisms in such heterostructures is essential. In this study, vertically stacked graphene-based heterostructure transistors were manufactured to elucidate the mechanism of electron injection at the interface. The temperature dependence of the electrical characteristics was investigated from 300 to 90 K. In a careful analysis of current-voltage characteristics, an unusual decrease in the effective Schottky barrier height and increase in the ideality factor were observed with decreasing temperature. A model of thermionic emission with a Gaussian distribution of barriers was able to precisely interpret the conduction mechanism. Furthermore, mapping of the effective Schottky barrier height is unmasked as a function of temperature and gate voltage. The results offer significant insight for the development of future layer-integration technology based on graphene-based heterostructures.

  8. Tunable band gaps in graphene/GaN van der Waals heterostructures

    International Nuclear Information System (INIS)

    Huang, Le; Kang, Jun; Li, Yan; Li, Jingbo; Yue, Qu

    2014-01-01

    Van der Waals (vdW) heterostructures consisting of graphene and other two-dimensional materials provide good opportunities for achieving desired electronic and optoelectronic properties. Here, we focus on vdW heterostructures composed of graphene and gallium nitride (GaN). Using density functional theory, we perform a systematic study on the structural and electronic properties of heterostructures consisting of graphene and GaN. Small band gaps are opened up at or near the Γ point of the Brillouin zone for all of the heterostructures. We also investigate the effect of the stacking sequence and electric fields on their electronic properties. Our results show that the tunability of the band gap is sensitive to the stacking sequence in bilayer-graphene-based heterostructures. In particular, in the case of graphene/graphene/GaN, a band gap of up to 334 meV is obtained under a perpendicular electric field. The band gap of bilayer graphene between GaN sheets (GaN/graphene/graphene/GaN) shows similar tunability, and increases to 217 meV with the perpendicular electric field reaching 0.8 V Å  − 1 . (paper)

  9. Highly efficient single-pass frequency doubling of a continuous-wave distributed feedback laser diode using a PPLN waveguide crystal at 488 nm.

    Science.gov (United States)

    Jechow, Andreas; Schedel, Marco; Stry, Sandra; Sacher, Joachim; Menzel, Ralf

    2007-10-15

    A continuous-wave distributed feedback diode laser emitting at 976 nm was frequency doubled by the use of a periodically poled lithium niobate waveguide crystal with a channel size of 3 microm x 5 microm and an interaction length of 10 mm. A laser to waveguide coupling efficiency of 75% could be achieved resulting in 304 mW of incident infrared light inside the waveguide. Blue laser light emission of 159 mW at 488 nm has been generated, which equals to a conversion efficiency of 52%. The resulting wall plug efficiency was 7.4%.

  10. Phase diagram of a two-dimensional liquid in GaAs/AlxGa1-xAs biased double quantum wells

    DEFF Research Database (Denmark)

    Timofeev, V. B.; Larionov, A. V.; Alessi, M. G.

    2000-01-01

    Photoluminescence (PL) and PL excitation (PLE) measurements have been performed in GaAs/AlxGa1-xAs biased double quantum well heterostructures. The recombination of electrons, e, with holes, h, located in the same or in two adjacent wells, has been investigated for different exciting power...

  11. Exchange bias coupling in La{sub 0.7}Sr{sub 0.3}MnO{sub 3}/BiFeO{sub 3} heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Huijben, Mark; Chu, Ying-Hao; Martin, Lane W.; Seidel, Jan; Balke, Nina; Gajek, Martin; Yang, Chan-Ho; Yu, Pu; Holcomb, Micky; Ramesh, Ramamoorthy [Department of Physics and Department of Materials Science and Engineering, University of California, Berkeley (United States)

    2008-07-01

    Heterostructures based on perovskite transition-metal oxides have attracted much attention because of the possibility of tuning the magnetic and electronic properties of thin films through interface effects such as exchange interactions, charge transfer, and epitaxial strain. The development and understanding of multiferroic materials such as BiFeO{sub 3}, have piqued the interest with the promise of coupling between order parameters such as ferroelectricity and antiferromagnetism. In this study we investigate the magnetic properties in ferromagnetic-antiferromagnetic multiferroic heterostructures by using atomic scale controlled growth through laser-MBE in combination with real-time RHEED monitoring. We will show the controlled coupling at the interfaces in La{sub 0.7}Sr{sub 0.3}MnO{sub 3}/BiFeO{sub 3} heterostructures. This coupling behavior is investigated by structural measurements, such as X-ray reciprocal space mapping to clarify strained states, and magnetic measurements to gain a deeper fundamental understanding of the interactions at these interfaces. The interface coupling displays a strong enhancement in the coercivity of the La{sub 0.7}Sr{sub 0.3}MnO{sub 3} layer and a large shift in the magnetization hysteresis loops, indicating the existence of exchange bias coupling.

  12. Surface- and interface-engineered heterostructures for solar hydrogen generation

    Science.gov (United States)

    Chen, Xiangyan; Li, Yanrui; Shen, Shaohua

    2018-04-01

    Photoelectrochemical (PEC) water splitting based on semiconductor photoelectrodes provides a promising platform for reducing environmental pollution and solving the energy crisis by developing clean, sustainable and environmentally friendly hydrogen energy. In this context, metal oxides with their advantages including low cost, good chemical stability and environmental friendliness, have attracted extensive attention among the investigated candidates. However, the large bandgap, poor charge transfer ability and high charge recombination rate limit the PEC performance of metal oxides as photoelectrodes. To solve this limitation, many approaches toward enhanced PEC water splitting performance, which focus on surface and interface engineering, have been presented. In this topical review, we concentrate on the heterostructure design of some typical metal oxides with narrow bandgaps (e.g. Fe2O3, WO3, BiVO4 and Cu2O) as photoelectrodes. An overview of the surface- and interface-engineered heterostructures, including semiconductor heterojunctions, surface protection, surface passivation and cocatalyst decoration, will be given to introduce the recent advances in metal oxide heterostructures for PEC water splitting. This article aims to provide fundamental references and principles for designing metal oxide heterostructures with high activity and stability as photoelectrodes for PEC solar hydrogen generation.

  13. Chemical changes in carbon Nanotube-Nickel/Nickel Oxide Core/Shell nanoparticle heterostructures treated at high temperatures

    International Nuclear Information System (INIS)

    Chopra, Nitin; McWhinney, Hylton G.; Shi Wenwu

    2011-01-01

    Heterostructures composed of carbon nanotube (CNT) coated with Ni/NiO core/shell nanoparticles (denoted as CNC heterostructures) were synthesized in a wet-chemistry and single-step synthesis route involving direct nucleation of nanoparticles on CNT surface. Two different aspects of CNC heterostructures were studied here. First, it was observed that the nanoparticle coatings were more uniform on the as-produced and non-purified CNTs compared to purified (or acid treated) CNTs. These heterostructures were characterized using electron microscopy, Raman spectroscopy, and energy dispersive spectroscopy. Second, thermal stability of CNC heterostructures was studied by annealing them in N 2 -rich (O 2 -lean) environment between 125 and 750 deg. C for 1 h. A detailed X-ray photoelectron spectroscopy and Raman spectroscopy analysis was performed to evaluate the effects of annealing temperatures on chemical composition, phases, and stability of the heterostructures. It was observed that the CNTs present in the heterostructures completely decomposed and core Ni nanoparticle oxidized significantly between 600 and 750 deg. C. - Research Highlights: → Heterostructures composed of CNTs coated with Ni/NiO core/shell nanoparticles. → Poor nanoparticle coverage on purified CNT surface compared to non-purified CNTs. → CNTs in heterostructures decompose between 600 and 750 deg. C in N 2 -rich atmosphere. → Metallic species in heterostructures were oxidized at higher temperatures.

  14. Photoluminescence energy transitions in GaAs-Ga{sub 1-x}Al{sub x}As double quantum wells: Electric and magnetic fields and hydrostatic pressure effects

    Energy Technology Data Exchange (ETDEWEB)

    Lopez, S.Y. [Grupo de Educacion en Ciencias Experimentales y Matematicas-GECEM, Facultad de Educacion, Universidad de Antioquia, AA 1226 Medellin (Colombia); Mora-Ramos, M.E. [Facultad de Ciencias, Universidad Autonoma del Estado de Morelos, Av. Universidad 1001, CP 62209, Cuernavaca, Morelos (Mexico); Duque, C.A., E-mail: cduque@fisica.udea.edu.c [Instituto de Fisica, Universidad de Antioquia, AA 1226 Medellin (Colombia)

    2009-12-15

    The photoluminescence energy transitions in GaAs-Ga{sub 1-x}Al{sub x}As coupled double quantum wells are presented by considering the simultaneous effects of applied electric and magnetic fields and hydrostatic pressure. Calculations have been made in the framework of the effective mass and parabolic band approximations and using a variational procedure. The electric field is taken to be oriented along the growth direction of the heterostructure whereas for the magnetic field both in-plane and in-growth directions have been considered. The results show that the hydrostatic pressure and the applied electric field are two useful tools to tune the direct and indirect exciton transitions in such heterostructures. Our results are in good agreement with previous experimental findings in double quantum wells under applied electric field and hydrostatic pressure.

  15. Enhanced photoresponse characteristics of transistors using CVD-grown MoS2/WS2 heterostructures

    Science.gov (United States)

    Shan, Junjie; Li, Jinhua; Chu, Xueying; Xu, Mingze; Jin, Fangjun; Fang, Xuan; Wei, Zhipeng; Wang, Xiaohua

    2018-06-01

    Semiconductor heterostructures based on transition metal dichalcogenides provide a broad platform to research two-dimensional nanomaterials and design atomically thin devices for fundamental and applied interests. The MoS2/WS2 heterostructure was prepared on SiO2/Si substrate by chemical vapor deposition (CVD) in our research. And the optical properties of the heterostructure was characterized by Raman and photoluminescence (PL) spectroscopy. The similar 2 orders of magnitude decrease of PL intensity in MoS2/WS2 heterostructures was tested, which is attribute to the electrical and optical modulation effects are connected with the interfacial charge transfer between MoS2 and WS2 films. Using MoS2/WS2 heterostructure as channel material of the phototransistor, we demonstrated over 50 folds enhanced photoresponsivity of multilayer MoS2 field-effect transistor. The results indicate that the MoS2/WS2 films can be a promising heterostructure material to enhance the photoresponse characteristics of MoS2-based phototransistors.

  16. Strong interlayer coupling in phosphorene/graphene van der Waals heterostructure: A first-principles investigation

    Science.gov (United States)

    Hu, Xue-Rong; Zheng, Ji-Ming; Ren, Zhao-Yu

    2018-04-01

    Based on first-principles calculations within the framework of density functional theory, we study the electronic properties of phosphorene/graphene heterostructures. Band gaps with different sizes are observed in the heterostructure, and charges transfer from graphene to phosphorene, causing the Fermi level of the heterostructure to shift downward with respect to the Dirac point of graphene. Significantly, strong coupling between two layers is discovered in the band spectrum even though it has a van der Waals heterostructure. A tight-binding Hamiltonian model is used to reveal that the resonance of the Bloch states between the phosphorene and graphene layers in certain K points combines with the symmetry matching between band states, which explains the reason for the strong coupling in such heterostructures. This work may enhance the understanding of interlayer interaction and composition mechanisms in van der Waals heterostructures consisting of two-dimensional layered nanomaterials, and may indicate potential reference information for nanoelectronic and optoelectronic applications.

  17. Proximity effects in topological insulator heterostructures

    International Nuclear Information System (INIS)

    Li Xiao-Guang; Wu Guang-Fen; Zhang Gu-Feng; Culcer Dimitrie; Zhang Zhen-Yu; Chen Hua

    2013-01-01

    Topological insulators (TIs) are bulk insulators that possess robust helical conducting states along their interfaces with conventional insulators. A tremendous research effort has recently been devoted to Tl-based heterostructures, in which conventional proximity effects give rise to a series of exotic physical phenomena. This paper reviews our recent studies on the potential existence of topological proximity effects at the interface between a topological insulator and a normal insulator or other topologically trivial systems. Using first-principles approaches, we have realized the tunability of the vertical location of the topological helical state via intriguing dual-proximity effects. To further elucidate the control parameters of this effect, we have used the graphene-based heterostructures as prototypical systems to reveal a more complete phase diagram. On the application side of the topological helical states, we have presented a catalysis example, where the topological helical state plays an essential role in facilitating surface reactions by serving as an effective electron bath. These discoveries lay the foundation for accurate manipulation of the real space properties of the topological helical state in TI-based heterostructures and pave the way for realization of the salient functionality of topological insulators in future device applications. (topical review - low-dimensional nanostructures and devices)

  18. Immediate pain relief effect of low level laser therapy for sports injuries: Randomized, double-blind placebo clinical trial.

    Science.gov (United States)

    Takenori, A; Ikuhiro, M; Shogo, U; Hiroe, K; Junji, S; Yasutaka, T; Hiroya, K; Miki, N

    2016-12-01

    To determine the immediate pain relief effect of low-level laser therapy on sports injuries in athletes and degree of pain relief by the therapy. Double-blind, randomized, comparative clinical study. Participants were 32 college athletes with motion pain at a defined site. Participants were randomized into two groups in which the tested or placebo laser therapy was administered to determine pain intensity from painful action before and after laser irradiation, using the Modified Numerical Rating Scale. The post-therapeutic Modified Numerical Rating Scale score was subtracted from the pre-therapeutic Modified Numerical Rating Scale score to determine pain intensity difference, and the rate of pain intensity difference to pre-therapeutic Modified Numerical Rating Scale was calculated as pain relief rate. Low-level laser therapy was effective in 75% of the laser group, whereas it was not effective in the placebo group, indicating a significant difference in favor of the laser group (p<0.001). Pain relief rate was significantly higher in the laser group than in the placebo group (36.94% vs. 8.20%, respectively, p<0.001), with the difference in pain relief rate being 28.74%. Low-level laser therapy provided an immediate pain relief effect, reducing pain by 28.74%. It was effective for pain relief in 75% of participants. Copyright © 2016 Sports Medicine Australia. Published by Elsevier Ltd. All rights reserved.

  19. High performance 1.3 μm buried crescent lasers and LEDs for fiber optic links

    International Nuclear Information System (INIS)

    Fu, R.J.; Chan, E.Y.; Hong, C.S.

    1989-01-01

    Self-aligned buried crescent heterostructure (BCH) semiconductor lasers and LEDs have been successfully developed as superb light sources for fiber optic communications. The fabrication and performance characteristics of these InGaAsP/InP lasers and LEDs are described. For lasers, the threshold currents as low as 10 mA and differential quantum efficiencies as high as 50% are achieved. For LEDs, the output powers at 150 mA are higher than 1 mW. Good far field patterns are obtained in both the LEDs and lasers. Measured I-V, L-I, spectrum and far field patterns are presented

  20. Development of frequency tunable Ti:sapphire laser and dye laser pumped by a pulsed Nd:YAG laser

    International Nuclear Information System (INIS)

    Yi, Jong Hoon; Horn, Roland; Wendt, K.

    2001-01-01

    We investigated lasing characteristics of two kinds of tunable laser, liquid dye laser and solid Ti:sapphire crystal laser, pumped by high pulse repetition rate Nd:YAG laser. Dye laser showed drastically reduced pulsewidth compared with that of pump laser and it also contained large amount of amplified spontaneous emission. Ti:sapphire laser showed also reduced pulsewidth. But, the laser conversion pump laser and Ti:sapphire laser pulse, we used a Brewster-cut Pockel's cell for Q-switching. The laser was frequency doubled by a type I BBO crystal outside of the cavity.

  1. Experimental evidence for anisotropic double exchange interaction driven anisotropic transport in manganite heterostructures

    NARCIS (Netherlands)

    Liao, Zhaoliang; Koster, Gertjan; Huijben, Mark; Rijnders, A.J.H.M.

    2017-01-01

    An anisotropic double exchange interaction driven giant transport anisotropy is demonstrated in a canonic double exchange system of La2/3Sr1/3MnO3 ultrathin films epitaxially grown on NdGaO3 (110) substrates. The oxygen octahedral coupling at the La2/3Sr1/3MnO3/NdGaO3 interface induces a planar

  2. Yb-doped phosphate double-cladding optical fiber for high-power laser applications

    Science.gov (United States)

    Mura, E.; Scarpignato, G. C.; Lousteau, J.; Boetti, N. G.; Abrate, S.; Milanese, D.

    2013-02-01

    A Yb-doped phosphate glass double cladding optical fiber was prepared using a custom designed glass composition (P2O5 - Al2O3 - Li2O - B2O3 - BaO - PbO - La2O3) for high-power amplifier and laser applications. The preform drawing method was followed, with the preform being fabricated using the rotational casting technique. This technique, previously developed for tellurite, fluoride or chalcogenide glass preforms is reported for the first time using rare earth doped phosphate glasses. The main challenge was to design an adequate numerical aperture between first and second cladding while maintaining similar thermo-mechanical properties in view of the fiber drawing process. The preform used for the fiber drawing was produced by rod-in-tube technique at a rotation speed of 3000 rpm. The rotational casting technique allowed the manufacturing of an optical fiber featuring high quality interfaces between core and internal cladding and between the internal and external cladding, respectively. Loss attenuation was measured using the cut-back method and lasing was demonstrated at 1022 nm by core pumping with a fiber pigtailed laser diode at the wavelength of 976 nm.

  3. Tunable femtosecond laser in the visible range with an intracavity frequency-doubled optical parametric oscillator

    International Nuclear Information System (INIS)

    Zhu Jiang-Feng; Xu Liang; Lin Qing-Feng; Zhong Xin; Han Hai-Nian; Wei Zhi-Yi

    2013-01-01

    We demonstrated experimentally a synchronously pumped intracavity frequency-doubled femtosecond optical parametric oscillator (OPO) using a periodically-poled lithium niobate (PPLN) as the nonlinear material in combination with a lithium triborate (LBO) as the doubling crystal. A Kerr-lens-mode-locked (KLM) Ti:sapphire oscillator at the wavelength of 790 nm was used as the pump source, which was capable of generating pulses with a duration as short as 117 fs. A tunable femtosecond laser covering the 624–672 nm range was realized by conveniently adjusting the OPO cavity length. A maximum average output power of 260 mW in the visible range was obtained at the pump power of 2.2 W, with a typical pulse duration of 205 fs assuming a sech 2 pulse profile. (electromagnetism, optics, acoustics, heat transfer, classical mechanics, and fluid dynamics)

  4. M = Mo, W; X = S, Se, Te) heterostructures

    KAUST Repository

    Zhang, Qingyun

    2018-04-16

    Using first-principles calculations, we investigate the electronic properties of the two-dimensional GaX/MX2 (M = Mo, W; X = S, Se, Te) heterostructures. Orbital hybridization between GaX and MX2 is found to result in Rashba splitting at the valence-band edge around the Γ point, which grows for increasing strength of the spin-orbit coupling in the p orbitals of the chalcogenide atoms. The location of the valence-band maximum in the Brillouin zone can be tuned by strain and application of an out-of-plane electric field. The coexistence of Rashba splitting (in-plane spin direction) and band splitting at the K and K′ valleys (out-of-plane spin direction) makes GaX/MX2 heterostructures interesting for spintronics and valleytronics. They are promising candidates for two-dimensional spin-field-effect transistors and spin-valley Hall effect devices. Our findings shed light on the spin-valley coupling in van der Waals heterostructures.

  5. Analgesic effects of preinjection low-level laser/light therapy (LLLT) before third molar surgery: a double-blind randomized controlled trial

    NARCIS (Netherlands)

    Tuk, Jacco G. C.; van Wijk, Arjen J.; Mertens, Ine C.; Keleş, Zühal; Lindeboom, Jérôme A. H.; Milstein, Dan M. J.

    2017-01-01

    The aim of this study was to evaluate the analgesic effects of low-level laser therapy (LLLT) on preinjection sites in patients scheduled for third molar removal. This double-blind randomized controlled trial included 163 healthy patients undergoing third molar extractions. The study participants

  6. Frequency-doubled dual-pulse freddy lithrotripsy laser in the treatment of urinary tract calculi

    Science.gov (United States)

    Huang, Xuyuan; Bo, Juanjie; Chen, Bin; Wang, Yi-Xin

    2005-07-01

    Background and Purpose: The Frequency-Doubled Dual-Pulse Nd:YAG FREDDY laser is a short-pulsed, solid-state laser with wavelengths of 532 and 1064 nm that was developed for intracorporeal lithothripsy. This clinical study is designed to test its fragmentation efficiency in the treatment of urinary tract calculi. Patients and Methods: 500 urinary tract calculi treated in 194 female and 306 male patients with a mean age of 46 years. All patients were assessed one week post-op with a plain film of the kidneys, ureters and bladder. Stone-free rate and final outcome have been evaluated. Final outcome is defined as stone-free or residual fragments. Analysis has been made according to stone size, location and number of stones. The analgesia requirements during each treatment and complications have also been analyzed. Results: The overall stone-free rate for patients was 92.4%. The success rate for upper ureteral was 85.1% (126/148), while the rate for mid/lower was 95.3% (307/322). Bladder stone success rate 96.6% (29/30). Of all 38 incomplete fragmentations, 20 cases (4%) were treated with ESWL and 18 cases (3.6%) had open surgery. Neither fever nor pyonephrosis was reported. The average laser treatment time was 3.3 minutes and the average post-op hospitalization was 2.5 days. Conclusions: The FREDDY laser is an extremely efficient and safe minimally invasive lithotripsy treatment for urinary stones. It should be considered as an alternative treatment for urolithiasis.

  7. X = S, Se, Te) heterostructures

    KAUST Repository

    Zhang, Qingyun; Schwingenschlö gl, Udo

    2018-01-01

    Using first-principles calculations, we investigate the electronic properties of the two-dimensional GaX/MX2 (M = Mo, W; X = S, Se, Te) heterostructures. Orbital hybridization between GaX and MX2 is found to result in Rashba splitting at the valence

  8. Mesoscopic Elastic Distortions in GaAs Quantum Dot Heterostructures.

    Science.gov (United States)

    Pateras, Anastasios; Park, Joonkyu; Ahn, Youngjun; Tilka, Jack A; Holt, Martin V; Reichl, Christian; Wegscheider, Werner; Baart, Timothy A; Dehollain, Juan Pablo; Mukhopadhyay, Uditendu; Vandersypen, Lieven M K; Evans, Paul G

    2018-05-09

    Quantum devices formed in high-electron-mobility semiconductor heterostructures provide a route through which quantum mechanical effects can be exploited on length scales accessible to lithography and integrated electronics. The electrostatic definition of quantum dots in semiconductor heterostructure devices intrinsically involves the lithographic fabrication of intricate patterns of metallic electrodes. The formation of metal/semiconductor interfaces, growth processes associated with polycrystalline metallic layers, and differential thermal expansion produce elastic distortion in the active areas of quantum devices. Understanding and controlling these distortions present a significant challenge in quantum device development. We report synchrotron X-ray nanodiffraction measurements combined with dynamical X-ray diffraction modeling that reveal lattice tilts with a depth-averaged value up to 0.04° and strain on the order of 10 -4 in the two-dimensional electron gas (2DEG) in a GaAs/AlGaAs heterostructure. Elastic distortions in GaAs/AlGaAs heterostructures modify the potential energy landscape in the 2DEG due to the generation of a deformation potential and an electric field through the piezoelectric effect. The stress induced by metal electrodes directly impacts the ability to control the positions of the potential minima where quantum dots form and the coupling between neighboring quantum dots.

  9. Tracking Ultrafast Carrier Dynamics in Single Semiconductor Nanowire Heterostructures

    Directory of Open Access Journals (Sweden)

    Taylor A.J.

    2013-03-01

    Full Text Available An understanding of non-equilibrium carrier dynamics in silicon (Si nanowires (NWs and NW heterostructures is very important due to their many nanophotonic and nanoelectronics applications. Here, we describe the first measurements of ultrafast carrier dynamics and diffusion in single heterostructured Si nanowires, obtained using ultrafast optical microscopy. By isolating individual nanowires, we avoid complications resulting from the broad size and alignment distribution in nanowire ensembles, allowing us to directly probe ultrafast carrier dynamics in these quasi-one-dimensional systems. Spatially-resolved pump-probe spectroscopy demonstrates the influence of surface-mediated mechanisms on carrier dynamics in a single NW, while polarization-resolved femtosecond pump-probe spectroscopy reveals a clear anisotropy in carrier lifetimes measured parallel and perpendicular to the NW axis, due to density-dependent Auger recombination. Furthermore, separating the pump and probe spots along the NW axis enabled us to track space and time dependent carrier diffusion in radial and axial NW heterostructures. These results enable us to reveal the influence of radial and axial interfaces on carrier dynamics and charge transport in these quasi-one-dimensional nanosystems, which can then be used to tailor carrier relaxation in a single nanowire heterostructure for a given application.

  10. Photonic Heterostructures with Properties of Ferroelectrics and Light Polarizers

    Energy Technology Data Exchange (ETDEWEB)

    Palto, S. P., E-mail: palto@online.ru; Draginda, Yu A [Russian Academy of Sciences, Shubnikov Institute of Crystallography (Russian Federation)

    2010-11-15

    The optical and electro-optical properties of a new type of photonic heterostructure composed of alternating ferroelectric molecular layers and optically anisotropic layers of another material are considered. A numerical simulation of the real prototype of this heterostructure, which can be prepared by the Langmuir-Blodgett method from layers of a ferroelectric copolymer (polyvinylidene fluoride trifluoroethylene) and an azo dye with photoinduced optical anisotropy, has been performed. It is shown that this heterostructure has pronounced polarization optical properties and yields a significant change in the polarization state of light at the photonic band edges in the ranges of the maximum density of photon states. The latter property can be used to obtain an enhanced electro-optic effect at small spectral shifts of the photonic band (the latter can be provided by the piezoelectric effect in ferroelectric layers).

  11. Escher-like quasiperiodic heterostructures

    International Nuclear Information System (INIS)

    Barriuso, A G; Monzon, J J; Sanchez-Soto, L L; Costa, A F

    2009-01-01

    Quasiperiodic heterostructures present unique structural, electronic and vibrational properties, connected to the existence of incommensurate periods. We go beyond previous schemes, such as Fibonacci or Thue-Morse, based on substitutional sequences, by introducing construction rules generated by tessellations of the unit disc by regular polygons. We explore some of the properties exhibited by these systems. (fast track communication)

  12. Escher-like quasiperiodic heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Barriuso, A G; Monzon, J J; Sanchez-Soto, L L [Departamento de Optica, Facultad de Fisica, Universidad Complutense, 28040 Madrid (Spain); Costa, A F [Departamento de Matematicas Fundamentales, Facultad de Ciencias, Universidad Nacional de Educacion a Distancia, Senda del Rey 9, 28040 Madrid (Spain)

    2009-05-15

    Quasiperiodic heterostructures present unique structural, electronic and vibrational properties, connected to the existence of incommensurate periods. We go beyond previous schemes, such as Fibonacci or Thue-Morse, based on substitutional sequences, by introducing construction rules generated by tessellations of the unit disc by regular polygons. We explore some of the properties exhibited by these systems. (fast track communication)

  13. Terahertz luminescence of GaAs based on heterostructures with quantum wells at optical excitation of donors

    International Nuclear Information System (INIS)

    Bekin, N.A.; Zhukavin, R.Kh.; Kovalevskij, K.A.; Pavlov, S.G.; Shastin, V.N.; Zvonkov, B.N.; Uskova, E.A.

    2005-01-01

    Terahertz spontaneous emission (∼ 3-3.5 THz) based on 2D-continuum-shallow donor (Si) states transitions has been investigated from both GaAs/InGaAs:Si and GaAs/InGaAsP:Si selectively doped heterostructures under CO 2 laser excitation at the liquid helium temperature. It is shown that the population inversion and the amplification with the coefficient up to 100-300 cm -1 per active layer can be realized for the planar doping level N D ≅ 10 11 cm -2 in multilayer structures with 50 periods of quantum wells under the pump flux density 10 23 quant/cm 2 s [ru

  14. Graphene diamond-like carbon films heterostructure

    International Nuclear Information System (INIS)

    Zhao, Fang; Afandi, Abdulkareem; Jackman, Richard B.

    2015-01-01

    A limitation to the potential use of graphene as an electronic material is the lack of control over the 2D materials properties once it is deposited on a supporting substrate. Here, the use of Diamond-like Carbon (DLC) interlayers between the substrate and the graphene is shown to offer the prospect of overcoming this problem. The DLC films used here, more properly known as a-C:H with ∼25% hydrogen content, have been terminated with N or F moieties prior to graphene deposition. It is found that nitrogen terminations lead to an optical band gap shrinkage in the DLC, whilst fluorine groups reduce the DLC's surface energy. CVD monolayer graphene subsequently transferred to DLC, N terminated DLC, and F terminated DLC has then been studied with AFM, Raman and XPS analysis, and correlated with Hall effect measurements that give an insight into the heterostructures electrical properties. The results show that different terminations strongly affect the electronic properties of the graphene heterostructures. G-F-DLC samples were p-type and displayed considerably higher mobility than the other heterostructures, whilst G-N-DLC samples supported higher carrier densities, being almost metallic in character. Since it would be possible to locally pattern the distribution of these differing surface terminations, this work offers the prospect for 2D lateral control of the electronic properties of graphene layers for device applications

  15. Control of tunneling in a double-well potential with chirped laser pulses

    Science.gov (United States)

    Vatasescu, Mihaela

    2012-11-01

    We investigate the use of chirped laser pulses to control the tunneling dynamics in the 0g-(6s,6p3/2) double well of Cs2 coupled with other electronic surfaces. The possibility to manipulate the tunneling dynamics appears in a pump-dump scheme designed to form deeply bound cold molecules by photoassociation of two cold cesium atoms in the 0g-(6s,6p3/2) electronic state coupled with a3Σu+ (6s,6s) electronic state. The dump pulse is acting on the 0g-(6s,6p3/2) barrier and can be used to control the tunneling and to capture population in the inner well in deep vibrational levels out of tunneling resonances.

  16. Control of tunneling in a double-well potential with chirped laser pulses

    International Nuclear Information System (INIS)

    Vatasescu, Mihaela

    2012-01-01

    We investigate the use of chirped laser pulses to control the tunneling dynamics in the 0 g − (6s,6p 3/2 ) double well of Cs 2 coupled with other electronic surfaces. The possibility to manipulate the tunneling dynamics appears in a pump-dump scheme designed to form deeply bound cold molecules by photoassociation of two cold cesium atoms in the 0 g − (6s,6p 3/2 ) electronic state coupled with a 3 Σ u + (6s,6s) electronic state. The dump pulse is acting on the 0g − (6s,6p3/2) barrier and can be used to control the tunneling and to capture population in the inner well in deep vibrational levels out of tunneling resonances.

  17. Graphene-Nanodiamond Heterostructures and their application to High Current Devices

    Science.gov (United States)

    Zhao, Fang; Vrajitoarea, Andrei; Jiang, Qi; Han, Xiaoyu; Chaudhary, Aysha; Welch, Joseph O.; Jackman, Richard B.

    2015-01-01

    Graphene on hydrogen terminated monolayer nanodiamond heterostructures provides a new way to improve carrier transport characteristics of the graphene, offering up to 60% improvement when compared with similar graphene on SiO2/Si substrates. These heterostructures offers excellent current-carrying abilities whilst offering the prospect of a fast, low cost and easy methodology for device applications. The use of ND monolayers is also a compatible technology for the support of large area graphene films. The nature of the C-H bonds between graphene and H-terminated NDs strongly influences the electronic character of the heterostructure, creating effective charge redistribution within the system. Field effect transistors (FETs) have been fabricated based on this novel herterostructure to demonstrate device characteristics and the potential of this approach. PMID:26350107

  18. Synthesis; characterization; and growth mechanism of Au/CdS heterostructured nanoflowers constructed with nanorods

    International Nuclear Information System (INIS)

    Kong Qingcheng; Wu Rong; Feng Xiumei; Ye Cui; Hu Guanqi; Hu Jianqiang; Chen Zhiwu

    2011-01-01

    Research highlights: → Well-defined and flower-shaped Au/CdS heterostructured nanocrystals were for the first time synthesized. → The Au-nanorod-induced hydrothermal strategy was for the first time used to fabricate metal/semiconductor heterostructured nanomaterials. → A preliminary crystal growing mechanism was also proposed for better understanding the growth process of other Au/semiconductor heterostructure nanocrystals. → The route devised here should also be extendable to fabricate other Au/semiconductor heterostructure nanomaterials. - Abstract: Gold/sulfide cadmium (Au/CdS) heterostructured nanocrystals with a flower-like shape were for the first time synthesized through an Au-nanorod-induced hydrothermal method. The Au/CdS nanoflowers possessed the average size of about 350 nm while the nanorods constructing the nanoflowers had the average diameter, length, and aspect ratio of approximately 50 nm, 100 nm, and 2, respectively. Our method suggested that Au-nanorods played a decisive role in the formation of Au/CdS heterostructured nanoflowers, demonstrated by high-resolution transmission electron microscopy (HRTEM), electron diffraction (ED), energy-dispersive X-ray spectroscopy (EDS), and UV-visible absorption spectroscopy measurements. A preliminary experiment model to reveal the Au/CdS growth mechanism was also put forward. The route devised here should be perhaps extendable to fabricate other Au/semiconductor heterostructured nanomaterials, and the Au/CdS nanoflowers may have potential applications in nanodevices, biolabels, and clinical detection and diagnosis.

  19. Direct pumping of ultrashort Ti:sapphire lasers by a frequency doubled diode laser

    DEFF Research Database (Denmark)

    Müller, André; Jensen, Ole Bjarlin; Unterhuber, Angelika

    2011-01-01

    electro-optical efficiency of the diode laser. Autocorrelation measurements show that pulse widths of less than 20 fs can be expected with an average power of 52 mW when using our laser. These results indicate the high potential of direct diode laser pumped Ti: sapphire lasers to be used in applications....... When using our diode laser system, the optical conversion efficiencies from green to near-infrared light reduces to 75 % of the values achieved with the commercial pump laser. Despite this reduction the overall efficiency of the Ti: sapphire laser is still increased by a factor > 2 due to the superior...... like retinal optical coherence tomography (OCT) or pumping of photonic crystal fibers for CARS (coherent anti-stokes Raman spectroscopy) microscopy....

  20. Synthesis, fabrication and characterization of Ge/Si axial nanowire heterostructure tunnel FETs

    Energy Technology Data Exchange (ETDEWEB)

    Picraux, Samuel T [Los Alamos National Laboratory; Dayeh, Shadi A [Los Alamos National Laboratory

    2010-01-01

    Axial Ge/Si heterostructure nanowires allow energy band-edge engineering along the axis of the nanowire, which is the charge transport direction, and the realization of asymmetric devices for novel device architectures. This work reports on two advances in the area of heterostructure nanowires and tunnel FETs: (i) the realization of 100% compositionally modulated Si/Ge axial heterostructure nanowires with lengths suitable for device fabrication and (ii) the design and implementation of Schottky barrier tunnel FETs on these nanowires for high-on currents and suppressed ambipolar behavior. Initial prototype devices resulted in a current drive in excess of 100 {micro}A/{micro}m (I/{pi}D) and 10{sup 5} I{sub on}/I{sub off} ratios. These results demonstrate the potential of such asymmetric heterostructures (both in the semiconductor channel and metal-semiconductor barrier heights) for low-power and high performance electronics.

  1. Thermoelectric properties of IV–VI-based heterostructures and superlattices

    Energy Technology Data Exchange (ETDEWEB)

    Borges, P.D., E-mail: pabloborges@ufv.br [Instituto de Ciências Exatas e Tec., Universidade Federal de Viçosa, Rio Paranaíba, MG (Brazil); Department of Physics, Texas State University, San Marcos, TX 78666 (United States); Petersen, J.E.; Scolfaro, L. [Department of Physics, Texas State University, San Marcos, TX 78666 (United States); Leite Alves, H.W. [Departamento de Ciências Naturais, Universidade Federal de São João Del Rei, Caixa Postal 110, São João Del Rei 36300-000, MG (Brazil); Myers, T.H. [Department of Physics, Texas State University, San Marcos, TX 78666 (United States)

    2015-07-15

    Doping in a manner that introduces anisotropy in order to reduce thermal conductivity is a significant focus in thermoelectric research today. By solving the semiclassical Boltzmann transport equations in the constant scattering time (τ) approximation, in conjunction with ab initio electronic structure calculations, within Density Functional Theory, we compare the Seebeck coefficient (S) and figure of merit (ZT) of bulk PbTe to PbTe/SnTe/PbTe heterostructures and PbTe doping superlattices (SLs) with periodically doped planes. Bismuth and Thallium were used as the n- and p-type impurities, respectively. The effects of carrier concentration are considered via chemical potential variation in a rigid band approximation. The impurity bands near the Fermi level in the electronic structure of PbTe SLs are of Tl s- and Bi p-character, and this feature is independent of the doping concentration or the distance between impurity planes. We observe the impurity bands to have a metallic nature in the directions perpendicular to the doping planes, yet no improvement on the values of ZT is found when compared to bulk PbTe. For the PbTe/SnTe/PbTe heterostructures, the calculated S presents good agreement with recent experimental data, and an anisotropic behavior is observed for low carrier concentrations (n<10{sup 18} cm{sup −3}). A large value of ZT{sub ||} (parallel to the growth direction) of 3.0 is predicted for n=4.7×10{sup 18} cm{sup −3} and T=700 K, whereas ZT{sub p} (perpendicular to the growth direction) is found to peak at 1.5 for n=1.7×10{sup 17} cm{sup −3}. Both electrical conductivity enhancement and thermal conductivity reduction are analyzed. - Graphical abstract: Figure of merit for PbTe/SnTe/PbTe heterostructure along the [0 0 1] direction, P.D. Borges, J.E. Petersen, L. Scolfaro, H.W. Leite Alves, T.H. Myers, Improved thermoelectric properties of IV–VI-based heterostructures and superlattices. - Highlights: • Thermoelectric properties of IV

  2. The study of 670.7 nm red light generated by intracavity frequency doubling of a Q-switched Nd : YAlO3 laser

    International Nuclear Information System (INIS)

    Zhu Haiyong; Zhang Ge; Huang Chenghui; Wei Yong; Huang Lingxiong; Huang Yidong

    2009-01-01

    High-power 670.7 nm red light was obtained by intracavity frequency doubling of a Q-switched Nd : YAlO 3 (Nd : YAP) laser with a critical phase matching (θ = 85.9 0 , φ = 0 0 ) cut LBO. Experimental configurations using V-cavity and Z-cavity have been adopted for comparison. The highest output power of 19.7 W was achieved in the Z-cavity with optical-optical efficiency of 4%. Compared with the laser using an Nd : YAG crystal, the adoption of Nd : YAP simplified the laser system in the absence of a solid etalon and the Brewster plate. The output power stability of the red laser was investigated and the fluctuation was lower than 3% at the output power of 18 W an hour.

  3. Selective tuning of high-Q silicon photonic crystal nanocavities via laser-assisted local oxidation.

    Science.gov (United States)

    Chen, Charlton J; Zheng, Jiangjun; Gu, Tingyi; McMillan, James F; Yu, Mingbin; Lo, Guo-Qiang; Kwong, Dim-Lee; Wong, Chee Wei

    2011-06-20

    We examine the cavity resonance tuning of high-Q silicon photonic crystal heterostructures by localized laser-assisted thermal oxidation using a 532 nm continuous wave laser focused to a 2.5 μm radius spot-size. The total shift is consistent with the parabolic rate law. A tuning range of up to 8.7 nm is achieved with ∼ 30 mW laser powers. Over this tuning range, the cavity Qs decreases from 3.2×10(5) to 1.2×10(5). Numerical simulations model the temperature distributions in the silicon photonic crystal membrane and the cavity resonance shift from oxidation.

  4. Pulsed laser deposition of {CeO_2} and {Ce_{1-x}M_xO_2} (M = La, Zr): Application to insulating barrier in cuprate heterostructures

    Science.gov (United States)

    Berger, S.; Contour, J.-P.; Drouet, M.; Durand, O.; Khodan, A.; Michel, D.; Régi, F.-X.

    1998-03-01

    SrTiO_3 had been often tentatively used as an insulating barrier for HT superconductor/insulator heterostructures. Unfortunately, the deposition of SrTiO_3 on the YBa_2Cu_3O_7 inverse interface results in a poor epitaxial regrowth producing a high roughness dislocated titanate layer. Taking into account the good matching with YBa_2Cu_3O_7 and LaAlO_3, CeO_2 and Ce_{1-x}M_xO_2 (M = La, Zr), epitaxial layers were grown by pulsed laser deposition on LaAlO_3 substrates and introduced into YBa_2Cu_3O_7 based heterostructures as insulating barrier. After adjusting the growth parameters from RHEED oscillations, epitaxial growth is achieved, the oxide crystal axes being rotated by 45^circ from those of the substrate. The surface roughness of 250 nm thick films is very low with a rms value lower than 0.5 nm over 1;μ m^2. The YBa_2Cu_3O_7 layers of a YBa_2Cu_3O_7/CeO_2 /YBa_2Cu_3O_7 heterostructures grown using these optimized parameters show an independent resistive transition, when the thickness is larger than 25 nm, respectively at T_c_1 = 89.6;K and T_c_2 = 91.4;{K}. SrTiO3 est souvent utilisé comme barrière isolante dans des hétérostructures SIS de cuprates supraconducteurs, cependant les défauts générés lors de la croissance de ce titanate sur l'interface inverse de YBa2Cu3O7 conduisent à un matériau dont la qualité cristalline et les propriétés physiques sont médiocres. L'oxyde de cérium CeO2 est également une barrière isolante potentielle intéressante pour ces structures SIS basées sur YBa2Cu3O7 car cet oxyde cubique (a = 0,5411 nm, asqrt{2}/2 = 0,3825 nm) qui est peu désaccordé par rapport au plan ab du cuprate (Δ a/a = - 0,18 %, Δ b/a = 1,6 %) présente de plus un coefficient de dilatation thermique (10,6 × 10^{-6 circ}C^{-1}) très voisin de celui de YBa2Cu3O7 (13 × 10^{-6 circ}C^{-1}). Nous avons donc étudié l'épitaxie de CeO2 et des oxydes de type Ce{1-x}MxO2 (M = La, Zr) en ablation laser pulsée afin de définir des conditions de

  5. 3.76 W of green light generated by intracavity frequency doubling of a 1081.5 nm Yb:GdYSiO2 laser with LiB3O5

    International Nuclear Information System (INIS)

    Zhang, D; Shao, Y; Liu, H P; Li, Y L; Tao, Z H; Ruan, Q R; Zhang, T Y

    2011-01-01

    Efficient continuous-wave (CW) intracavity frequency doubling of a diode-end-pumped Yb:GdYSiO 2 (Yb:GYSO) laser operating on 2 F 5/2 → 2 F 7/2 transitions at 1081.5 nm has been demonstrated. With 17.6 W of diode pump power and the frequency doubling crystal LiB 3 O 5 (LBO), a maximum output power of 3.76 W in the green spectral range at 541 nm has been achieved, corresponding to an optical-to-optical conversion efficiency of 21.4%; the output power stability over 30 min is better than 5%. To the best of our knowledge, this is first work on intracavity frequency doubling of a diode pumped Yb:GYSO laser at 1081.5 nm

  6. Diffusion thermopower of a serial double quantum dot

    International Nuclear Information System (INIS)

    Thierschmann, H; Henke, M; Knorr, J; Maier, L; Buhmann, H; Molenkamp, L W; Heyn, C; Hansen, W

    2013-01-01

    We have experimentally studied the diffusion thermopower of a serial double quantum dot, defined electrostatically in a GaAs/AlGaAs heterostructure. We present the thermopower stability diagram for a temperature difference ΔT = (20 ± 10) mK across the device and find a maximum thermovoltage signal of several μV in the vicinity of the triple points. Along a constant energy axis in this regime, the data show a characteristic pattern which is in agreement with Mott's relation and can be well understood within a model of sequential transport. (paper)

  7. Generating a 2.4-W cw Green Laser by Intra-Cavity Frequency Doubling of a Diode-Pumped Nd:GdVO4 Laser with a MgO:PPLN Crystal

    International Nuclear Information System (INIS)

    Lu Jun; Liu Yan-Hua; Zhao Gang; Hu Xiao-Peng; Zhu Shi-Ning

    2012-01-01

    High-power cw green laser radiation is generated by intra-cavity frequency doubling of a diode-pumped Nd:GdVO 4 laser with a MgO-doped periodically-poled LiNbO 3 (MgO:PPLN) crystal at room temperature. An average power of 2.4 W at 0.53 μm is obtained under the pump 15 W at 808 nm, corresponding to an overall optical-to-optical conversion efficiency of 16%. The M 2 factor of the green beam is 3.90 and 1.34 for the horizontal and vertical direction, respectively. In addition, the power fluctuation is measured to be about ±5%

  8. Analytical performances of laser-induced micro-plasma of Al samples with single and double ultrashort pulses in air and with Ar-jet: A comparative study

    International Nuclear Information System (INIS)

    Semerok, A.; Dutouquet, C.

    2014-01-01

    Ultrashort pulse laser microablation coupled with optical emission spectroscopy was under study to obtain several micro-LIBS analytical features (shot-to-shot reproducibility, spectral line intensity and lifetime, calibration curves, detection limits). Laser microablation of Al matrix samples with known Cu- and Mg-concentrations was performed by single and double pulses of 50 fs and 1 ps pulse duration in air and with Ar-jet. The micro-LIBS analytical features obtained under different experimental conditions were characterized and compared. The highest shot-to-shot reproducibility and gain in plasma spectral line intensity were obtained with double pulses with Ar-jet for both 50 fs and 1 ps pulse durations. The best calibration curves were obtained with 1 ps pulse duration with Ar-jet. Micro-LIBS with ultrashort double pulses may find its effective application for surface elemental microcartography. - Highlights: • Analytical performances of micro-LIBS with ultrashort double pulses were studied. • The maximal line intensity gain of 20 was obtained with double pulses and Ar-jet. • LIBS gain was obtained without additional ablation of a sample by the second pulse. • LIBS properties were almost the same for both 50 fs and 1 ps pulses. • The micro-LIBS detection limit was around 35 ppm

  9. Diode-side-pumped intracavity frequency-doubled Nd:YAG/BaWO4 Raman laser generating average output power of 3.14 W at 590 nm.

    Science.gov (United States)

    Li, Shutao; Zhang, Xingyu; Wang, Qingpu; Zhang, Xiaolei; Cong, Zhenhua; Zhang, Huaijin; Wang, Jiyang

    2007-10-15

    We report a linear-cavity high-power all-solid-state Q-switched yellow laser. The laser source comprises a diode-side-pumped Nd:YAG module that produces 1064 nm fundamental radiation, an intracavity BaWO(4) Raman crystal that generates a first-Stokes laser at 1180 nm, and a KTP crystal that frequency doubles the first-Stokes laser to 590 nm. A convex-plane cavity is employed in this configuration to counteract some of the thermal effect caused by high pump power. An average output power of 3.14 W at 590 nm is obtained at a pulse repetition frequency of 10 kHz.

  10. Topological properties and correlation effects in oxide heterostructures

    Science.gov (United States)

    Okamoto, Satoshi

    2015-03-01

    Transition-metal oxides (TMOs) have long been one of the main subjects of material science because of their novel functionalities such as high-Tc superconductivity in cuprates and the colossal magnetoresistance effect in manganites. In recent years, we have seen tremendous developments in thin film growth techniques with the atomic precision, resulting in the discovery of a variety of electronic states in TMO heterostructures. These developments motivate us to explore the possibility of novel quantum states of matter such as topological insulators (TIs) in TMO heterostructures. In this talk, I will present our systematic theoretical study on unprecedented electronic states in TMO heterostructures. An extremely simple but crucial observation is that, when grown along the [111] crystallographic axis, bilayers of perovskite TMOs form buckled honeycomb lattices of transition-metal ions, similar to graphene. Thus, with the relativistic spin-orbit coupling and proper band filling, two-dimensional TI states or spin Hall insulators are anticipated. Based on tight-binding modeling and density-functional theory calculations, possible candidate materials for TIs are identified. By means of the dynamical-mean-field theory and a slave-boson mean field theory, correlation effects, characteristics of TMOs, are also examined. I will further discuss future prospects in topological phenomena in TMO heterostructures and related systems. The author thanks D. Xiao, W. Zhu, Y. Ran, R. Arita, Y. Nomura and N. Nagaosa for their fruitful discussions and collaboration. This work is supported by the U.S. Department of Energy, Office of Science, Basic Energy Sciences, Materials Sciences and Engineering Division.

  11. Time-dependent B-spline R-matrix approach to double ionization of atoms by XUV laser pulses

    Energy Technology Data Exchange (ETDEWEB)

    Guan Xiaoxu; Zatsarinny, Oleg; Bartschat, Klaus [Department of Physics and Astronomy, Drake University, Des Moines, Iowa 50311 (United States); Noble, Clifford J [Computational Science and Engineering Department, Daresbury Laboratory, Warrington WA4 4AD (United Kingdom); Schneider, Barry I, E-mail: xiaoxu.guan@drake.ed, E-mail: klaus.bartschat@drake.ed, E-mail: bschneid@nsf.go [Physics Division, National Science Foundation, Arlington, Virgina 22230 (United States)

    2009-11-01

    We present an ab initio and non-perturbative time-dependent approach to the problem of double ionization of a general atom driven by intense XUV laser pulses. After using a highly flexible B-spline R-matrix method to generate field-free Hamiltonian and electric dipole matrices, the initial state is propagated in time using an efficient Arnoldi-Lanczos scheme. Example results for momentum and energy distributions of the two outgoing electrons in two-color pump-probe processes of He are presented.

  12. Determination of polarization fields in group III-nitride heterostructures by capacitance-voltage-measurements

    Energy Technology Data Exchange (ETDEWEB)

    Rychetsky, Monir, E-mail: monir.rychetsky@physik.tu-berlin.de; Avinc, Baran; Wernicke, Tim; Bellmann, Konrad; Sulmoni, Luca [Institute of Solid State Physics, Technische Universität Berlin, Berlin (Germany); Koslow, Ingrid; Rass, Jens; Kneissl, Michael [Institute of Solid State Physics, Technische Universität Berlin, Berlin (Germany); Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Berlin (Germany); Hoffmann, Veit; Weyers, Markus [Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Berlin (Germany); Wild, Johannes; Zweck, Josef [Fakultät für Physik, University of Regensburg, Regensburg (Germany); Witzigmann, Bernd [Computational Electronics and Photonics Group and CINSaT, University of Kassel, Kassel (Germany)

    2016-03-07

    The polarization fields in wurtzite group III-nitrides strongly influence the optical properties of InAlGaN-based light emitters, e.g., the electron and hole wave function overlap in quantum wells. In this paper, we propose a new approach to determine these fields by capacitance-voltage measurements (CVM). Sheet charges generated by a change of the microscopic polarization at heterointerfaces influence the charge distribution in PIN junctions and therefore the depletion width and the capacitance. We show that it is possible to determine the strength and direction of the internal fields by comparing the depletion widths of two PIN junctions, one influenced by internal polarization fields and one without as a reference. For comparison, we conducted coupled Poisson/carrier transport simulations on the CVM of the polarization-influenced sample. We also demonstrate the feasibility and limits of the method by determining the fields in GaN/InGaN and GaN/AlGaN double heterostructures on (0001) c-plane grown by metal organic vapor phase epitaxy and compare both evaluation methods. The method yields (−0.50 ± 0.07) MV/cm for In{sub 0.08}Ga{sub 0.92}N/GaN, (0.90 ± 0.13) MV/cm for Al{sub 0.18}Ga{sub 0.82}N/GaN, and (2.0 ± 0.3) MV/cm for Al{sub 0.31}Ga{sub 0.69}N/GaN heterostructures.

  13. Internal quantum efficiency in yellow-amber light emitting AlGaN-InGaN-GaN heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Ngo, Thi Huong; Gil, Bernard; Valvin, Pierre [Laboratoire Charles Coulomb – UMR 5221, CNRS and University Montpellier, Case courier 074, 34095 Montpellier Cedex 5 (France); Damilano, Benjamin; Lekhal, Kaddour; De Mierry, Philippe [CRHEA-CNRS Centre de Recherche sur l' Hétéro-Epitaxie et ses Applications, Centre National de la Recherche Scientifique, rue Bernard Gregory, 06560 Valbonne (France)

    2015-09-21

    We determine the internal quantum efficiency of strain-balanced AlGaN-InGaN-GaN hetero-structures designed for yellow-amber light emission, by using a recent model based on the kinetics of the photoluminescence decay initiated by Iwata et al. [J. Appl. Phys. 117, 075701 (2015)]. Our results indicate that low temperature internal quantum efficiencies sit in the 50% range and we measure that adding an AlGaN layer increases the internal quantum efficiency from 50% up to 57% with respect to the GaN-InGaN case. More dramatic, it almost doubles from 2.5% up to 4.3% at room temperature.

  14. Growth and characterization of ternary Ni, Mg–Al and Ni–Al layered double hydroxides thin films deposited by pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Birjega, R. [National Institute for Lasers, Plasma and Radiation Physics, 409 Atomistilor Str., Magurele, 76900 Bucharest (Romania); Vlad, A., E-mail: angela.vlad@gmail.com [National Institute for Lasers, Plasma and Radiation Physics, 409 Atomistilor Str., Magurele, 76900 Bucharest (Romania); Matei, A.; Ion, V.; Luculescu, C.; Dinescu, M. [National Institute for Lasers, Plasma and Radiation Physics, 409 Atomistilor Str., Magurele, 76900 Bucharest (Romania); Zavoianu, R. [University of Bucharest, Faculty of Chemistry, Department of Chemical Technology and Catalysis, 4-12 Regina Elisabeta Bd., Bucharest (Romania)

    2016-09-01

    Layered double hydroxides (LDHs) are a class of layered materials consisting of positively charged brucite-like layers and exchangeable interlayer anions. Layered double hydroxides containing a transition metal which undergoes a reversible redox reaction in the useful potential range have been proposed as electrode coating materials due to their properties of charge transport and redox catalysts in basic solutions. Ni–Al,(Ni,Mg)–Al and, as reference, non-electronically conductive Mg–Al double hydroxides thin films were obtained via pulsed laser deposition technique. The thin films were deposited on different substrates (Si, glass) by using a Nd:YAG laser (1064 nm) working at a repetition rate of 10 Hz. X-ray diffraction, Atomic Force Microscopy, Energy Dispersive X-ray spectroscopy, Fourier Transform Infra-Red Spectroscopy, Secondary Ions Mass Spectrometry, Impedance Analyzer and ellipsometry were the techniques used for the as deposited thin films investigation. The optical properties of Ni based LDH thin films and the effect of the Ni amount on the structural, morphological and optical response are evidenced. The optical band gap values, covering a domain between 3.84 eV and 4.38 eV, respond to the Ni overall concentration: the higher Ni amount the lower the band gap value. - Highlights: • Ternary Ni, Mg–Al and Ni–Al layered double hydroxides thin films were deposited. • The effect of the nickel is evidenced. • The possibility to tailor the materials accompanied by an optical response is shown.

  15. Frictional Magneto-Coulomb Drag in Graphene Double-Layer Heterostructures.

    Science.gov (United States)

    Liu, Xiaomeng; Wang, Lei; Fong, Kin Chung; Gao, Yuanda; Maher, Patrick; Watanabe, Kenji; Taniguchi, Takashi; Hone, James; Dean, Cory; Kim, Philip

    2017-08-04

    Coulomb interaction between two closely spaced parallel layers of conductors can generate the frictional drag effect by interlayer Coulomb scattering. Employing graphene double layers separated by few-layer hexagonal boron nitride, we investigate density tunable magneto- and Hall drag under strong magnetic fields. The observed large magnetodrag and Hall-drag signals can be related with Laudau level filling status of the drive and drag layers. We find that the sign and magnitude of the drag resistivity tensor can be quantitatively correlated to the variation of magnetoresistivity tensors in the drive and drag layers, confirming a theoretical formula for magnetodrag in the quantum Hall regime. The observed weak temperature dependence and ∼B^{2} dependence of the magnetodrag are qualitatively explained by Coulomb scattering phase-space argument.

  16. Dynamically tunable interface states in 1D graphene-embedded photonic crystal heterostructure

    Science.gov (United States)

    Huang, Zhao; Li, Shuaifeng; Liu, Xin; Zhao, Degang; Ye, Lei; Zhu, Xuefeng; Zang, Jianfeng

    2018-03-01

    Optical interface states exhibit promising applications in nonlinear photonics, low-threshold lasing, and surface-wave assisted sensing. However, the further application of interface states in configurable optics is hindered by their limited tunability. Here, we demonstrate a new approach to generate dynamically tunable and angle-resolved interface states using graphene-embedded photonic crystal (GPC) heterostructure device. By combining the GPC structure design with in situ electric doping of graphene, a continuously tunable interface state can be obtained and its tuning range is as wide as the full bandgap. Moreover, the exhibited tunable interface states offer a possibility to study the correspondence between space and time characteristics of light, which is beyond normal incident conditions. Our strategy provides a new way to design configurable devices with tunable optical states for various advanced optical applications such as beam splitter and dynamically tunable laser.

  17. NTES laser facility for physics experiments

    International Nuclear Information System (INIS)

    Christie, D.J.; Foley, R.J.; Frank, D.N.

    1989-01-01

    This paper discusses the following topics on the NTES laser facility: Mission Statement and Project Description; Experiment Area; High-Energy, Double-Pass Laser; Facilities; Laser Control and Data Acquisition; and Auxiliary Lasers

  18. Electron-related nonlinearities in GaAs-Ga{sub 1-x}Al{sub x}As double quantum wells under the effects of intense laser field and applied electric field

    Energy Technology Data Exchange (ETDEWEB)

    Mora-Ramos, M.E. [Facultad de Ciencias, Universidad Autonoma del Estado de Morelos, Ave. Universidad 1001, CP 62209, Cuernavaca, Morelos, Mexico (Mexico); Instituto de Fisica, Universidad de Antioquia, AA 1226 Medellin (Colombia); Duque, C.A., E-mail: cduque_echeverri@yahoo.es [Instituto de Fisica, Universidad de Antioquia, AA 1226 Medellin (Colombia); Kasapoglu, E.; Sari, H. [Cumhuriyet University, Physics Department, 58140 Sivas (Turkey); Soekmen, I. [Dokuz Eyluel University, Physics Department, 35160 Buca, Izmir (Turkey)

    2013-03-15

    The combined effects of intense laser radiation and applied electric fields on the intersubband-related linear and nonlinear optical properties in GaAs-based quantum wells are discussed. It is shown that for asymmetric double quantum well, the increasing laser field intensity causes progressive redshifts in the peak positions of the second and third harmonic coefficients. However, the resonant peaks of the nonlinear optical rectification can suffer a blueshift or a redshift, depending on the laser strengths. The same feature appears in the case of the resonant peaks corresponding to the total coefficients of optical absorption and relative change in the refractive index. - Highlights: Black-Right-Pointing-Pointer Nonlinear optical properties in double quantum wells. Black-Right-Pointing-Pointer Increasing laser field intensity causes redshifts in the peak positions. Black-Right-Pointing-Pointer Resonant peak of second order nonlinearities can be blue-shifted. Black-Right-Pointing-Pointer Relative change in refractive index depends of the applied electric field. Black-Right-Pointing-Pointer The energy position depends of the laser field parameter.

  19. Heterostructured ZnS/InP nanowires for rigid/flexible ultraviolet photodetectors with enhanced performance.

    Science.gov (United States)

    Zhang, Kai; Ding, Jia; Lou, Zheng; Chai, Ruiqing; Zhong, Mianzeng; Shen, Guozhen

    2017-10-19

    Heterostructured ZnS/InP nanowires, composed of single-crystalline ZnS nanowires coated with a layer of InP shell, were synthesized via a one-step chemical vapor deposition process. As-grown heterostructured ZnS/InP nanowires exhibited an ultrahigh I on /I off ratio of 4.91 × 10 3 , a high photoconductive gain of 1.10 × 10 3 , a high detectivity of 1.65 × 10 13 Jones and high response speed even in the case of very weak ultraviolet light illumination (1.87 μW cm -2 ). The values are much higher than those of previously reported bare ZnS nanowires owing to the formation of core/shell heterostructures. Flexible ultraviolet photodetectors were also fabricated with the heterostructured ZnS/InP nanowires, which showed excellent mechanical flexibility, electrical stability and folding endurance besides excellent photoresponse properties. The results elucidated that the heterostructured ZnS/InP nanowires could find good applications in next generation flexible optoelectronic devices.

  20. Ultrafast Spectroscopic Noninvasive Probe of Vertical Carrier Transport in Heterostructure Devices

    Science.gov (United States)

    2016-03-01

    ARL-TR-7618 ● MAR 2016 US Army Research Laboratory Ultrafast Spectroscopic Noninvasive Probe of Vertical Carrier Transport in...US Army Research Laboratory Ultrafast Spectroscopic Noninvasive Probe of Vertical Carrier Transport in Heterostructure Devices by Blair C...Spectroscopic Noninvasive Probe of Vertical Carrier Transport in Heterostructure Devices 5a. CONTRACT NUMBER 5b. GRANT NUMBER 5c. PROGRAM ELEMENT

  1. Process and application of shock compression by nanosecond pulses of frequency-doubled Nd:YAG laser

    Science.gov (United States)

    Sano, Yuji; Kimura, Motohiko; Mukai, Naruhiko; Yoda, Masaki; Obata, Minoru; Ogisu, Tatsuki

    2000-02-01

    The authors have developed a new process of laser-induced shock compression to introduce a residual compressive stress on material surface, which is effective for prevention of stress corrosion cracking (SCC) and enhancement of fatigue strength of metal materials. The process developed is unique and beneficial. It requires no pre-conditioning for the surface, whereas the conventional process requires that the so-called sacrificial layer is made to protect the surface from damage. The new process can be freely applied to water- immersed components, since it uses water-penetrable green light of a frequency-doubled Nd:YAG laser. The process developed has the potential to open up new high-power laser applications in manufacturing and maintenance technologies. The laser-induced shock compression process (LSP) can be used to improve a residual stress field from tensile to compressive. In order to understand the physics and optimize the process, the propagation of a shock wave generated by the impulse of laser irradiation and the dynamic response of the material were analyzed by time-dependent elasto-plastic calculations with a finite element program using laser-induced plasma pressure as an external load. The analysis shows that a permanent strain and a residual compressive stress remain after the passage of the shock wave with amplitude exceeding the yield strength of the material. A practical system materializing the LSP was designed, manufactured, and tested to confirm the applicability to core components of light water reactors (LWRs). The system accesses the target component and remotely irradiates laser pulses to the heat affected zone (HAZ) along weld lines. Various functional tests were conducted using a full-scale mockup facility, in which remote maintenance work in a reactor vessel could be simulated. The results showed that the system remotely accessed the target weld lines and successfully introduced a residual compressive stress. After sufficient training

  2. Semiconductor optical amplifiers for the 1000-1100-nm spectral range

    International Nuclear Information System (INIS)

    Lobintsov, A A; Shramenko, M V; Yakubovich, S D

    2008-01-01

    Two types of semiconductor optical amplifiers (SOAs) based on a double-layer quantum-well (InGa)As/(GaAl)As/GaAs heterostructure are investigated. The optical gain of more than 30 dB and saturation output power of more than 30 mW are achived at 1060 nm in pigtailed SOA modules. These SOAs used as active elements of a tunable laser provide rapid continuous tuning within 85 nm and 45 nm at output powers of 0.5 mW and more than 30 mW, respectively. (active media, lasers, and amplifiers)

  3. 2 µm high-power dissipative soliton resonance in a compact σ-shaped Tm-doped double-clad fiber laser

    Science.gov (United States)

    Du, Tuanjie; Li, Weiwei; Ruan, Qiujun; Wang, Kaijie; Chen, Nan; Luo, Zhengqian

    2018-05-01

    We report direct generation of a high-power, large-energy dissipative soliton resonance (DSR) in a 2 µm Tm-doped double-clad fiber laser. A compact σ-shaped cavity is formed by a fiber Bragg grating and a 10/90 fiber loop mirror (FLM). The 10/90 FLM is not only used as an output mirror, but also acts as a nonlinear optical loop mirror for initiating mode locking. The mode-locked laser can deliver high-power, nanosecond DSR pulses at 2005.9 nm. We further perform a comparison study of the effect of the FLM’s loop length on the mode-locking threshold, peak power, pulse energy, and optical spectrum of the DSR pulses. We achieve a maximum average output power as high as 1.4 W, a maximum pulse energy of 353 nJ, and a maximum peak power of 84 W. This is, to the best of our knowledge, the highest power for 2 µm DSR pulses obtained in a mode-locked fiber laser.

  4. Simulation of ablation and plume dynamics under femtosecond double-pulse laser irradiation of aluminum: Comparison of atomistic and continual approaches

    Energy Technology Data Exchange (ETDEWEB)

    Fokin, Vladimir B.; Povarnitsyn, Mikhail E., E-mail: povar@ihed.ras; Levashov, Pavel R.

    2017-02-28

    Highlights: • We model double-pulse laser ablation of aluminum using microscopic and macroscopic approaches. • Both methods show decrease in depth of crater with increasing delay between pulses. • Both methods reveal the plume temperature growth with the increasing delay. • Good agreement between results is a step towards the development of combined model. - Abstract: We elaborated two numerical methods, two-temperature hydrodynamics and hybrid two-temperature molecular dynamics, which take into account basic mechanisms of a metal target response to ultrashort laser irradiation. The model used for the description of the electronic subsystem is identical for both approaches, while the ionic part is defined by an equation of state in hydrodynamics and by an interatomic potential in molecular dynamics. Since the phase diagram of the equation of state and corresponding potential match reasonably well, the dynamics of laser ablation obtained by both methods is quite similar. This correspondence can be considered as a first step towards the development of a self-consistent combined model. Two important processes are highlighted in simulations of double-pulse ablation: (1) the crater depth decrease as a result of recoil flux formation in the nascent plume when the delay between the pulses increases; (2) the plume reheating by the second pulse that gives rise to two- three-fold growth of the electron temperature with the delay varying from 0 to 200 ps.

  5. Electroluminescence in quantum well heterostructures p-Al{sub x}Ga{sub 1-x}As/GaAs{sub 1-y}P{sub y}/n-Al{sub x}Ga{sub 1-x}As under uniaxial stress

    Energy Technology Data Exchange (ETDEWEB)

    Berman, Irina V. [Physics Department, San Jose State University, CA (United States); Bogdanov, Evgeniy V.; Minina, Natalia Ya.; Shirokov, Stanislav S.; Yunovich, Alexander E. [Physics Department, Lomonosov Moscow State University (Russian Federation); Kissel, Heiko [R and D Department, DILAS Diodenlaser GmbH, (Germany)

    2009-03-15

    We present new results on the influence of uniaxial stress up to P=4 kbar on the electroluminescence spectra and current-voltage characteristics of p-Al{sub x}Ga{sub 1-x}As/GaAs{sub 1-y}P{sub y}/n-Al{sub x}Ga{sub 1-x}As double heterostructures usually used in TM emitting 808 nm high-power diode lasers. With increasing stress, the emission spectra demonstrate a blue shift of up to 25 meV at a pressure of P=4 kbar, while the electroluminescence intensity increases under compression. The different behavior of the current-voltage characteristics under uniaxial stress along[110] and[1 anti 10] directions is mainly determined by the arising piezoelectric field. The results are also discussed in terms of changes in the band structure under uniaxial compression. The construction of the cryostat for optical measurements under uniaxial stress at liquid nitrogen temperature is described in the paper. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  6. Growth of GaN-based non- and semipolar heterostructures for high efficiency light emitters

    International Nuclear Information System (INIS)

    Wernicke, Tim

    2010-01-01

    well as transmission electron microscopy. Homoepitaxial layers on bulk GaN substrates exhibit an excellent crystal quality (FWHM 2 . The layers on these substrates exhibit a distinct pyramidal surface morphology resulting in a distortion of the optical and electronic properties of the emitter heterostructure. When we reduced the adatom diffusion length, the hillock structure could be strongly reduced for the semipolar orientations (10 anti 11), (10 anti 12) and (11 anti 22) but not for m-plane GaN. Using these substrates the In-incorporation into quantum wells was studied. The (10 anti 11) exhibited the highest incorporation efficiency followed by (11 anti 22) and c-plane. M-plane and (1012) feature a much lower In-incorporation compared to the other orientations. The favorable orientation for green emitters would be therefore the (10 anti 11) and (11 anti 22). We grew high-quality laser heterostructures with very low defect densities on bulk m-plane and semipolar GaN substrates. These structures show amplified stimulated emission and the tilting of laser modes in semipolar resonators due to birefringence was experimentally observed for the first time. Epitaxial growth and device fabrication processes were developed to realize LED structures and broad area laser devices on nonpolar surfaces. We were able to demonstrate current-injection InGaN MQW LEDs at 410 nm with a maximum output power of 2.5 mW on m-plane GaN substrates.

  7. III-N Wide Bandgap Deep-Ultraviolet Lasers and Photodetectors

    KAUST Repository

    Detchprohm, T.

    2016-11-05

    The III-N wide-bandgap alloys in the AlInGaN system have many important and unique electrical and optical properties which have been exploited to develop deep-ultraviolet (DUV) optical devices operating at wavelengths < 300 nm, including light-emitting diodes, optically pumped lasers, and photodetectors. In this chapter, we review some aspects of the development and current state of the art of these DUV materials and devices. We describe the growth of III-N materials in the UV region by metalorganic chemical vapor deposition as well as the properties of epitaxial layers and heterostructure devices. In addition, we discuss the simulation and design of DUV laser diodes, the processing of III-N optical devices, and the description of the current state of the art of DUV lasers and photodetectors.

  8. Anomalous low-temperature Coulomb drag in graphene-GaAs heterostructures.

    Science.gov (United States)

    Gamucci, A; Spirito, D; Carrega, M; Karmakar, B; Lombardo, A; Bruna, M; Pfeiffer, L N; West, K W; Ferrari, A C; Polini, M; Pellegrini, V

    2014-12-19

    Vertical heterostructures combining different layered materials offer novel opportunities for applications and fundamental studies. Here we report a new class of heterostructures comprising a single-layer (or bilayer) graphene in close proximity to a quantum well created in GaAs and supporting a high-mobility two-dimensional electron gas. In our devices, graphene is naturally hole-doped, thereby allowing for the investigation of electron-hole interactions. We focus on the Coulomb drag transport measurements, which are sensitive to many-body effects, and find that the Coulomb drag resistivity significantly increases for temperatures law, therefore displaying a notable departure from the ordinary quadratic temperature dependence expected in a weakly correlated Fermi-liquid. This anomalous behaviour is consistent with the onset of strong interlayer correlations. Our heterostructures represent a new platform for the creation of coherent circuits and topologically protected quantum bits.

  9. Rare-earth nickelates RNiO3: thin films and heterostructures

    Science.gov (United States)

    Catalano, S.; Gibert, M.; Fowlie, J.; Íñiguez, J.; Triscone, J.-M.; Kreisel, J.

    2018-04-01

    This review stands in the larger framework of functional materials by focussing on heterostructures of rare-earth nickelates, described by the chemical formula RNiO3 where R is a trivalent rare-earth R  =  La, Pr, Nd, Sm, …, Lu. Nickelates are characterized by a rich phase diagram of structural and physical properties and serve as a benchmark for the physics of phase transitions in correlated oxides where electron–lattice coupling plays a key role. Much of the recent interest in nickelates concerns heterostructures, that is single layers of thin film, multilayers or superlattices, with the general objective of modulating their physical properties through strain control, confinement or interface effects. We will discuss the extensive studies on nickelate heterostructures as well as outline different approaches to tuning and controlling their physical properties and, finally, review application concepts for future devices.

  10. Intense laser effects on nonlinear optical absorption and optical rectification in single quantum wells under applied electric and magnetic field

    International Nuclear Information System (INIS)

    Duque, C.A.; Kasapoglu, E.; Sakiroglu, S.; Sari, H.; Soekmen, I.

    2011-01-01

    In this work the effects of intense laser on the electron-related nonlinear optical absorption and nonlinear optical rectification in GaAs-Ga 1-x Al x As quantum wells are studied under, applied electric and magnetic field. The electric field is applied along the growth direction of the quantum well whereas the magnetic field has been considered to be in-plane. The calculations were performed within the density matrix formalism with the use of the effective mass and parabolic band approximations. The intense laser effects are included through the Floquet method, by modifying the confining potential associated to the heterostructure. Results are presented for the nonlinear optical absorption, the nonlinear optical rectification and the resonant peak of these two optical processes. Several configurations of the dimensions of the quantum well, the applied electric and magnetic fields, and the incident intense laser radiation have been considered. The outcome of the calculation suggests that the nonlinear optical absorption and optical rectification are non-monotonic functions of the dimensions of the heterostructure and of the external perturbations considered in this work.

  11. Growth and properties of low-dimensional III-V semiconductor nanowire heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Heiss, Martin

    2010-08-25

    In this work the properties of GaAs nanowire based heterostructures are investigated. The nanowires and their heterostructures are synthesized with Molecular Beam Epitaxy. The optical and structural properties are characterized by means of low temperature confocal micro-photoluminescence spectroscopy and Transmission Electron Microscopy. Molecular Beam Epitaxy is a versatile technique that allows to switch from radial to axial growth in order to cap the nanowires by an epitaxial prismatic AlGaAs/GaAs heterostructure. This can passivate surface states and improve the optical properties. The effect of such a passivation layer is studied by quantitative comparison of the diameter dependence of photoluminescence in passivated and unpassivated nanowires. The passivation is an important prerequisite for more complex axial heterostructures. Evidence for radial confinement effects is found in passivated nanowires with core diameters smaller than 70 nm. Furthermore, the polarization dependence of light absorption and emission is investigated. Two different types of axial heterostructures are studied that have the potential to further enhance the functionality of such nanowires. In a first step, the possibility of growth of axial InGaAs heterostructure in the Au-free Molecular Beam Epitaxy growth regime is investigated. Suitable growth conditions are identified and the growth temperature window for both GaAs and InGaAs nanowires is determined. At the optimum growth temperature for GaAs nanowires, the incorporation of indium in the structure is limited to a few percent. It is shown that by lowering the growth temperature the indium concentration in the structure can be increased up to 20%. The optical properties of the synthesized axial heterostructures are investigated by means of micro-photoluminescence spectroscopy and Transmission Electron Microscopy. The second type of axial nanowire heterostructure investigated in the present work is characterized by a change in crystal

  12. Thermal response in van der Waals heterostructures

    KAUST Repository

    Gandi, Appala

    2016-11-21

    We solve numerically the Boltzmann transport equations of the phonons and electrons to understand the thermoelectric response in heterostructures of M2CO2 (M: Ti, Zr, Hf) MXenes with transition metal dichalcogenide monolayers. Low frequency optical phonons are found to occur as a consequence of the van der Waals bonding, contribute significantly to the thermal transport, and compensate for the reduced contributions of the acoustic phonons (increased scattering cross-sections in heterostructures), such that the thermal conductivities turn out to be similar to those of the bare MXenes. Our results indicate that the important superlattice design approach of thermoelectrics (to reduce the thermal conductivity) may be effective for two-dimensional van der Waals materials when used in conjunction with intercalation. © 2016 IOP Publishing Ltd.

  13. 2D lateral heterostructures of group-III monochalcogenide: Potential photovoltaic applications

    Science.gov (United States)

    Cheng, Kai; Guo, Yu; Han, Nannan; Jiang, Xue; Zhang, Junfeng; Ahuja, Rajeev; Su, Yan; Zhao, Jijun

    2018-04-01

    Solar photovoltaics provides a practical and sustainable solution to the increasing global energy demand. Using first-principles calculations, we investigate the energetics and electronic properties of two-dimensional lateral heterostructures by group-III monochalcogenides and explore their potential applications in photovoltaics. The band structures and formation energies from supercell calculations demonstrate that these heterostructures retain semiconducting behavior and might be synthesized in laboratory using the chemical vapor deposition technique. According to the computed band offsets, most of the heterojunctions belong to type II band alignment, which can prevent the recombination of electron-hole pairs. Besides, the electronic properties of these lateral heterostructures can be effectively tailored by the number of layers, leading to a high theoretical power conversion efficiency over 20%.

  14. Amorphous Oxide Thin Film Transistors with Nitrogen-Doped Hetero-Structure Channel Layers

    Directory of Open Access Journals (Sweden)

    Haiting Xie

    2017-10-01

    Full Text Available The nitrogen-doped amorphous oxide semiconductor (AOS thinfilm transistors (TFTs with double-stacked channel layers (DSCL were prepared and characterized. The DSCL structure was composed of nitrogen-doped amorphous InGaZnO and InZnO films (a-IGZO:N/a-IZO:N or a-IZO:N/a-IGZO:N and gave the corresponding TFT devices large field-effect mobility due to the presence of double conduction channels. The a-IZO:N/a-IGZO:N TFTs, in particular, showed even better electrical performance (µFE = 15.0 cm2・V−1・s−1, SS = 0.5 V/dec, VTH = 1.5 V, ION/IOFF = 1.1 × 108 and stability (VTH shift of 1.5, −0.5 and −2.5 V for positive bias-stress, negative bias-stress, and thermal stress tests, respectively than the a-IGZO:N/a-IZO:N TFTs. Based on the X-ray photoemission spectroscopy measurements and energy band analysis, we assumed that the optimized interface trap states, the less ambient gas adsorption, and the better suppression of oxygen vacancies in the a-IZO:N/a-IGZO:N hetero-structures might explain the better behavior of the corresponding TFTs.

  15. A quantitative analysis on the interfacial effect in the Pt/Ba0.5Sr0.5TiO3/La0.67Sr0.33MnO3 heterostructure

    International Nuclear Information System (INIS)

    Miao, J; Wang, Y; Tian, H Y; Zhou, X Y; Chan, H L W; Choy, C L; Cao, L X; Zhao, B R

    2006-01-01

    The heterostructure of Pt/Ba 0.5 Sr 0.5 TiO 3 /La 0.67 Sr 0.33 MnO 3 (Pt/BST/LSMO) with the BST thickness ranging from 120 to 550 nm was fabricated by pulsed laser deposition. The dielectric constant (ε) of the heterostructure was measured under different electrical fields (E) and frequency (f). A strong thickness dependence of the value of ε, the ε-E dependence and the ε-f dependence were observed, which can be well explained by the series-capacitor model, based on the assumption that the heterostructure electrically consists of a 'bulk' layer and an interfacial layer between the Pt and BST layers. The dielectric properties of the 'bulk' layer and the interface layer were obtained. At room temperature, the dielectric constant of the 'bulk' layer was 1204 (at 100 kHz) and had a power law dependence on frequency. The ratio of thickness over the dielectric constant (d i /ε i ) of the interface layer, which was used to characterize the property of the Pt/BST interface, was found to be around 0.08 nm at room temperature and to be independent of frequency

  16. AlN/GaN heterostructures for normally-off transistors

    Energy Technology Data Exchange (ETDEWEB)

    Zhuravlev, K. S., E-mail: zhur@isp.nsc.ru; Malin, T. V.; Mansurov, V. G.; Tereshenko, O. E. [Russian Academy of Sciences, Rzhanov Institute of Semiconductor Physics, Siberian Branch (Russian Federation); Abgaryan, K. K.; Reviznikov, D. L. [Dorodnicyn Computing Centre of the Russian Academy of Sciences (Russian Federation); Zemlyakov, V. E.; Egorkin, V. I. [National Research University of Electronic Technology (MIET) (Russian Federation); Parnes, Ya. M.; Tikhomirov, V. G. [Joint Stock Company “Svetlana-Electronpribor” (Russian Federation); Prosvirin, I. P. [Russian Academy of Sciences, Boreskov Institute of Catalysis, Siberian Branch (Russian Federation)

    2017-03-15

    The structure of AlN/GaN heterostructures with an ultrathin AlN barrier is calculated for normally-off transistors. The molecular-beam epitaxy technology of in situ passivated SiN/AlN/GaN heterostructures with a two-dimensional electron gas is developed. Normally-off transistors with a maximum current density of ~1 A/mm, a saturation voltage of 1 V, a transconductance of 350 mS/mm, and a breakdown voltage of more than 60 V are demonstrated. Gate lag and drain lag effects are almost lacking in these transistors.

  17. Optical spectroscopy of rubidium Rydberg atoms with a 297 nm frequency doubled dye laser

    International Nuclear Information System (INIS)

    Becker, Th.; Germann, Th.; Thoumany, P.; Stania, G.; Urbonas, L.; Haensch, T.

    2008-01-01

    Full text: Rydberg atoms have played an important role in atomic physics and optical spectroscopy since many years. Due to their long lifetime and the big dipole matrix element between neighbouring Rydberg levels they are an essential tool in microwave cavity-qed experiments. Ultracold Rydberg gases are a promising candidate for realizing controlled quantum gates in atomic ensembles. In most experiments Rydberg atoms are detected destructively, where the optically excited atoms are first ionized followed by an electronic detection of the ionization products. A Doppler-free purely optical detection was reported in a room temperature cell and in an atomic beam apparatus using the technique of electromagnetically induced transparency. In all these experiments the Rydberg atoms are excited with two lasers in a two-step ladder configuration. Here we show that Doppler-free purely optical spectroscopy is also possible with a one step excitation scheme involving a UV laser at 297 nm. We excite the 85 Rb isotope from the 5S 1/2 ground state to the 63P 3/2 state with a frequency doubled dye laser in a room temperature gas cell without buffer gas. Rydberg transitions are detected by monitoring the absorption of 780 nm laser light which is superimposed on the UV light and resonant with one hyperfine component of the Rubidium D2 line. With these two lasers we realize a V-scheme and utilize the quantum amplification effect due to the different natural lifetimes of the upper levels of the two transitions: an excitation into the 63P level hinders many absorption-emission cycles of the D2 transition and leads to a reduced absorption on that line. We discuss the shape of the observed spectra in the context of electron shelving and EIT experiments. By applying a frequency modulation to the UV laser, we can obtain dispersive signals which can be used to stabilize the laser to a specific Rydberg transition. By shifting the frequency of the 780 nm laser to crossover resonances in the

  18. Dual-wavelength green laser with a 4.5 THz frequency difference based on self-frequency- doubling in Nd3+ -doped aperiodically poled lithium niobate.

    Science.gov (United States)

    Maestre, H; Torregrosa, A J; Fernández-Pousa, C R; Rico, M L; Capmany, J

    2008-05-01

    We report a dual-wavelength continuous-wave laser at 542.4 and 546.8 nm based on an Nd(3+)-doped aperiodically poled lithium niobate crystal. Two fundamental infrared (IR) wavelengths at 1084.8 and 1093.6 nm are simultaneously oscillated and self-frequency-doubled to green. The aperiodic domain distribution patterned in the crystal allows for quasi-phase matched self-frequency-doubling of both IR fundamentals while avoiding their sum-frequency mixing.

  19. Multiple scattering theory for superconducting heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Ujfalussy, Balazs [Wigner Research Centre for Physics, Budapest (Hungary)

    2016-07-01

    We generalize the screened Korringa-Kohn-Rostoker method for solving the corresponding Kohn-Sham-Bogoliubov-de Gennes equations for surfaces and interfaces. As an application of the theory, we study the quasiparticle spectrum of Au overlayers on a Nb(100) host. We find that within the superconducting gap region, the quasiparticle spectrum consists of Andreev bound states with a dispersion which is closely connected to the underlying electronic structure of the overlayer. We also find that the spectrum has a strongly k-dependent induced gap. The properties of the gap are discussed in relation to the thickness of the overlayer, and it is shown that certain states do not participate in the Andreev scattering process. From the thickness dependence of the gap size we calculate the superconducting critical temperature of Au/Nb(100) heterostructures what we compare with with experiments. Moreover, predictions are made for similar heterostructures of other compounds.

  20. Voltage control of magnetism in multiferroic heterostructures.

    Science.gov (United States)

    Liu, Ming; Sun, Nian X

    2014-02-28

    Electrical tuning of magnetism is of great fundamental and technical importance for fast, compact and ultra-low power electronic devices. Multiferroics, simultaneously exhibiting ferroelectricity and ferromagnetism, have attracted much interest owing to the capability of controlling magnetism by an electric field through magnetoelectric (ME) coupling. In particular, strong strain-mediated ME interaction observed in layered multiferroic heterostructures makes it practically possible for realizing electrically reconfigurable microwave devices, ultra-low power electronics and magnetoelectric random access memories (MERAMs). In this review, we demonstrate this remarkable E-field manipulation of magnetism in various multiferroic composite systems, aiming at the creation of novel compact, lightweight, energy-efficient and tunable electronic and microwave devices. First of all, tunable microwave devices are demonstrated based on ferrite/ferroelectric and magnetic-metal/ferroelectric composites, showing giant ferromagnetic resonance (FMR) tunability with narrow FMR linewidth. Then, E-field manipulation of magnetoresistance in multiferroic anisotropic magnetoresistance and giant magnetoresistance devices for achieving low-power electronic devices is discussed. Finally, E-field control of exchange-bias and deterministic magnetization switching is demonstrated in exchange-coupled antiferromagnetic/ferromagnetic/ferroelectric multiferroic hetero-structures at room temperature, indicating an important step towards MERAMs. In addition, recent progress in electrically non-volatile tuning of magnetic states is also presented. These tunable multiferroic heterostructures and devices provide great opportunities for next-generation reconfigurable radio frequency/microwave communication systems and radars, spintronics, sensors and memories.

  1. The role of magnetoelastic strain on orbital control and transport properties in an LaTiO(3)-CoFe(2)O(4) heterostructure.

    Science.gov (United States)

    Li, J; Chu, H F; Zhang, Y; Wang, J; Zheng, D N; Song, Q; Wang, P; Ma, Y G; Ong, C K; Wang, S J

    2009-07-08

    Epitaxial heterostructures of CoFe(2)O(4)/LaTiO(3)/LaAlO(3) have been successfully prepared by using the pulsed laser deposition technique. The magnetoresistance (MR) of the samples is negative and linear with field at H≥2 T, exhibiting no dependence on field directions. Nevertheless, when Hstrains on the bottom LaTiO(3) layer. Apparently the orbital status and the one-electron bandwidth in the LaTiO(3) layer are altered, which leads to a change in resistance.

  2. Adsorption properties of Mg-Al layered double hydroxides thin films grown by laser based techniques

    Energy Technology Data Exchange (ETDEWEB)

    Matei, A., E-mail: andreeapurice@nipne.ro [National Institute for Lasers, Plasma and Radiation Physics, 409 Atomistilor Str., 77125 Bucharest, Magurele (Romania); Birjega, R.; Vlad, A.; Filipescu, M.; Nedelcea, A.; Luculescu, C. [National Institute for Lasers, Plasma and Radiation Physics, 409 Atomistilor Str., 77125 Bucharest, Magurele (Romania); Zavoianu, R.; Pavel, O.D. [University of Bucharest, Faculty of Chemistry, Department of Chemical Technology and Catalysis, 4-12 Regina Elisabeta Bd., Bucharest (Romania); Dinescu, M. [National Institute for Lasers, Plasma and Radiation Physics, 409 Atomistilor Str., 77125 Bucharest, Magurele (Romania)

    2012-09-15

    Highlights: Black-Right-Pointing-Pointer Laser techniques MAPLE and PLD can successfully be used to produce LDHs thin films. Black-Right-Pointing-Pointer Hydration treatments of the PLD and MAPLE deposited films lead to the LDH reconstruction effect. Black-Right-Pointing-Pointer The Ni retention from aqueous solution occurs in the films via a dissolution-reconstruction mechanism. Black-Right-Pointing-Pointer The films are suitable for applications in remediation of contaminated drinking water or waste waters. - Abstract: Powdered layered double hydroxides (LDHs) have been widely studied due to their applications as catalysts, anionic exchangers or host materials for inorganic and/or organic molecules. Assembling nano-sized LDHs onto flat solid substrates forming thin films is an expanding area of research due to the prospects of novel applications as sensors, corrosion-resistant coatings, components in optical and magnetic devices. Continuous and adherent thin films were grown by laser techniques (pulsed laser deposition - PLD and matrix assisted pulsed laser evaporation - MAPLE) starting from targets of Mg-Al LDHs. The capacity of the grown thin films to retain a metal (Ni) from contaminated water has been also explored. The thin films were immersed in an Ni(NO{sub 3}){sub 2} aqueous solutions with Ni concentrations of 10{sup -3}% (w/w) (1 g/L) and 10{sup -4}% (w/w) (0.1 g/L), respectively. X-ray diffraction (XRD), atomic force microscopy (AFM), scanning electron microscopy (SEM) combined with energy dispersive X-ray analysis (EDX) were the techniques used to characterize the prepared materials.

  3. Pyroelectric effect and lattice thermal conductivity of InN/GaN heterostructures

    Science.gov (United States)

    Hansdah, Gopal; Sahoo, Bijay Kumar

    2018-06-01

    The built-in-polarization (BIP) of InN/GaN heterostructures enhances Debye temperature, phonon mean free path and thermal conductivity of the heterostructure at room temperature. The variation of thermal conductivities (kp: including polarization mechanism and k: without polarization mechanism) with temperature predicts the existence of a transition temperature (Tp) between primary and secondary pyroelectric effect. Below Tp, kp is lower than k; while above Tp, kp is significantly contributed from BIP mechanism due to thermal expansion. A thermodynamic theory has been proposed to explain the result. The room temperature thermal conductivity of InN/GaN heterostructure with and without polarization is respectively 32 and 48 W m-1 K-1. The temperature Tp and room temperature pyroelectric coefficient of InN has been predicted as 120 K and -8.425 μC m-2 K-1, respectively which are in line with prior literature studies. This study suggests that thermal conductivity measurement in InN/GaN heterostructures can help to understand the role of phonons in pyroelectricity.

  4. Semiconductor laser shearing interferometer

    International Nuclear Information System (INIS)

    Ming Hai; Li Ming; Chen Nong; Xie Jiaping

    1988-03-01

    The application of semiconductor laser on grating shearing interferometry is studied experimentally in the present paper. The method measuring the coherence of semiconductor laser beam by ion etching double frequency grating is proposed. The experimental result of lens aberration with semiconductor laser shearing interferometer is given. Talbot shearing interferometry of semiconductor laser is also described. (author). 2 refs, 9 figs

  5. Superconducting cuprate heterostructures for hot electron bolometers

    Science.gov (United States)

    Wen, B.; Yakobov, R.; Vitkalov, S. A.; Sergeev, A.

    2013-11-01

    Transport properties of the resistive state of quasi-two dimensional superconducting heterostructures containing ultrathin La2-xSrxCuO4 layers synthesized using molecular beam epitaxy are studied. The electron transport exhibits strong deviation from Ohm's law, δV ˜γI3, with a coefficient γ(T) that correlates with the temperature variation of the resistivity dρ /dT. Close to the normal state, analysis of the nonlinear behavior in terms of electron heating yields an electron-phonon thermal conductance per unit area ge -ph≈1 W/K cm2 at T = 20 K, one-two orders of magnitude smaller than in typical superconductors. This makes superconducting LaSrCuO heterostructures to be attractive candidate for the next generation of hot electron bolometers with greatly improved sensitivity.

  6. Superconducting cuprate heterostructures for hot electron bolometers

    International Nuclear Information System (INIS)

    Wen, B.; Yakobov, R.; Vitkalov, S. A.; Sergeev, A.

    2013-01-01

    Transport properties of the resistive state of quasi-two dimensional superconducting heterostructures containing ultrathin La 2−x Sr x CuO 4 layers synthesized using molecular beam epitaxy are studied. The electron transport exhibits strong deviation from Ohm's law, δV∼γI 3 , with a coefficient γ(T) that correlates with the temperature variation of the resistivity dρ/dT. Close to the normal state, analysis of the nonlinear behavior in terms of electron heating yields an electron-phonon thermal conductance per unit area g e−ph ≈1 W/K cm 2 at T = 20 K, one-two orders of magnitude smaller than in typical superconductors. This makes superconducting LaSrCuO heterostructures to be attractive candidate for the next generation of hot electron bolometers with greatly improved sensitivity

  7. Ultrafast strain engineering in complex oxide heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Popovich, Paul; Caviglia, Andrea; Hu, Wanzheng; Bromberger, Hubertus; Singla, Rashmi; Mitrano, Matteo; Hoffmann, Matthias C.; Kaiser, Stefan; Foerst, Michael [Max-Planck Research Group for Structural Dynamics - Center for Free Electron Laser Science, University of Hamburg (Germany); Scherwitzl, Raoul; Zubko, Pavlo; Gariglio, Sergio; Triscone, Jean-Marc [Departement de Physique de la Matiere Condensee, University of Geneva, 24 Quai Ernest-Ansermet, 1211 Geneve 4, Geneva (Switzerland); Cavalleri, Andrea [Max-Planck Research Group for Structural Dynamics - Center for Free Electron Laser Science, University of Hamburg (Germany); Department of Physics, Clarendon Laboratory, University of Oxford (United Kingdom)

    2012-07-01

    The mechanical coupling between the substrate and the thin film is expected to be effective on the ultrafast timescale, and could be exploited for the dynamic control of materials properties. Here, we demonstrate that a large-amplitude mid-infrared field, made resonant with a stretching mode of the substrate, can switch the electronic properties of a thin film across an interface. Exploiting dynamic strain propagation between different components of a heterostructure, insulating antiferromagnetic NdNiO{sub 3} is driven through a prompt, five-order-of-magnitude increase of the electrical conductivity, with resonant frequency and susceptibility that is controlled by choice of the substrate material. Vibrational phase control, extended here to a wide class of heterostructures and interfaces, may be conductive to new strategies for electronic phase control at THz repetition rates.

  8. Physics of SrTiO3-based heterostructures and nanostructures: a review.

    Science.gov (United States)

    Pai, Yun-Yi; Tylan-Tyler, Anthony; Irvin, Patrick; Levy, Jeremy

    2018-02-09

    This review provides a summary of the rich physics expressed within SrTiO 3 -based heterostructures and nanostructures. The intended audience is researchers who are working in the field of oxides, but also those with different backgrounds (e.g., semiconductor nanostructures). After reviewing the relevant properties of SrTiO 3 itself, we will then discuss the basics of SrTiO 3 -based heterostructures, how they can be grown, and how devices are typically fabricated. Next, we will cover the physics of these heterostructures, including their phase diagram and coupling between the various degrees of freedom. Finally, we will review the rich landscape of quantum transport phenomena, as well as the devices that elicit them.

  9. Physics of SrTiO3-based heterostructures and nanostructures: a review

    Science.gov (United States)

    Pai, Yun-Yi; Tylan-Tyler, Anthony; Irvin, Patrick; Levy, Jeremy

    2018-03-01

    This review provides a summary of the rich physics expressed within SrTiO3-based heterostructures and nanostructures. The intended audience is researchers who are working in the field of oxides, but also those with different backgrounds (e.g., semiconductor nanostructures). After reviewing the relevant properties of SrTiO3 itself, we will then discuss the basics of SrTiO3-based heterostructures, how they can be grown, and how devices are typically fabricated. Next, we will cover the physics of these heterostructures, including their phase diagram and coupling between the various degrees of freedom. Finally, we will review the rich landscape of quantum transport phenomena, as well as the devices that elicit them.

  10. Pulsed laser deposition of HfO{sub 2} thin films on indium zinc oxide: Band offsets measurements

    Energy Technology Data Exchange (ETDEWEB)

    Craciun, D.; Craciun, V., E-mail: valentin.craciun@inflpr.ro

    2017-04-01

    Highlights: • High quality amorphous IZO and HfO{sub 2} films were obtained by PLD technique. • XPS measurements were used to obtain the valence band alignment in HfO{sub 2}/IZO heterostructure. • A valence band offset (ΔE{sub V}) of 1.75 eV was obtained for the HfO{sub 2}/IZO heterostructure. • A conduction band offset (ΔE{sub C}) of 0.65 eV was estimated for the HfO{sub 2}/IZO heterostructure. - Abstract: One of the most used dielectric films for amorphous indium zinc oxide (IZO) based thin films transistor is HfO{sub 2}. The estimation of the valence band discontinuity (ΔE{sub V}) of HfO{sub 2}/IZO heterostructure grown using the pulsed laser deposition technique, with In/(In + Zn) = 0.79, was obtained from X-ray photoelectron spectroscopy (XPS) measurements. The binding energies of Hf 4d5, Zn 2p3 and In 3d5 core levels and valence band maxima were measured for thick pure films and for a very thin HfO{sub 2} film deposited on a thick IZO film. A value of ΔE{sub V} = 1.75 ± 0.05 eV was estimated for the heterostructure. Taking into account the measured HfO{sub 2} and IZO optical bandgap values of 5.50 eV and 3.10 eV, respectively, a conduction band offset ΔE{sub C} = 0.65 ± 0.05 eV in HfO{sub 2}/IZO heterostructure was then obtained.

  11. NaCl-assisted one-step growth of MoS2-WS2 in-plane heterostructures

    Science.gov (United States)

    Wang, Zhan; Xie, Yong; Wang, Haolin; Wu, Ruixue; Nan, Tang; Zhan, Yongjie; Sun, Jing; Jiang, Teng; Zhao, Ying; Lei, Yimin; Yang, Mei; Wang, Weidong; Zhu, Qing; Ma, Xiaohua; Hao, Yue

    2017-08-01

    Transition metal dichalcogenides (TMDs) have attracted considerable interest for exploration of next-generation electronics and optoelectronics in recent years. Fabrication of in-plane lateral heterostructures between TMDs has opened up excellent opportunities for engineering two-dimensional materials. The creation of high quality heterostructures with a facile method is highly desirable but it still remains challenging. In this work, we demonstrate a one-step growth method for the construction of high-quality MoS2-WS2 in-plane heterostructures. The synthesis was carried out using ambient pressure chemical vapor deposition (APCVD) with the assistance of sodium chloride (NaCl). It was found that the addition of NaCl played a key role in lowering the growth temperatures, in which the Na-containing precursors could be formed and condensed on the substrates to reduce the energy of the reaction. As a result, the growth regimes of MoS2 and WS2 are better matched, leading to the formation of in-plane heterostructures in a single step. The heterostructures were proved to be of high quality with a sharp and clear interface. This newly developed strategy with the assistance of NaCl is promising for synthesizing other TMDs and their heterostructures.

  12. Strong magnetization and Chern insulators in compressed graphene/CrI 3 van der Waals heterostructures

    Science.gov (United States)

    Zhang, Jiayong; Zhao, Bao; Zhou, Tong; Xue, Yang; Ma, Chunlan; Yang, Zhongqin

    2018-02-01

    Graphene-based heterostructures are a promising material system for designing the topologically nontrivial Chern insulating devices. Recently, a two-dimensional monolayer ferromagnetic insulator CrI3 was successfully synthesized in experiments [B. Huang et al., Nature (London) 546, 270 (2017), 10.1038/nature22391]. Here, these two interesting materials are proposed to build a heterostructure (Gr /CrI3). Our first-principles calculations show that the system forms a van der Waals (vdW) heterostructure, which is relatively facilely fabricated in experiments. A Chern insulating state is acquired in the Gr /CrI3 heterostructure if the vdW gap is compressed to a distance between about 3.3 and 2.4 Å, corresponding to a required external pressure between about 1.4 and 18.3 GPa. Amazingly, very strong magnetization (about 150 meV) is found in graphene, induced by the substrate CrI3, despite the vdW interactions between them. A low-energy effective model is employed to understand the mechanism. The work functions, contact types, and band alignments of the Gr /CrI3 heterostructure system are also studied. Our work demonstrates that the Gr /CrI3 heterostructure is a promising system to observe the quantum anomalous Hall effect at high temperatures (up to 45 K) in experiments.

  13. Optical properties of a multibarrier structure under intense laser fields

    Science.gov (United States)

    Ospina, D. A.; Akimov, V.; Mora-Ramos, M. E.; Morales, A. L.; Tulupenko, V.; Duque, C. A.

    2015-11-01

    Using the diagonalization method and within the effective mass and parabolic band approximations, the energy spectrum and the wave functions are investigated in biased multibarrier structure taking into account the effects of nonresonant intense laser fields. We calculated the optical properties from the susceptibility using a nonperturbative formalism recently reported. We study the changes in the intersubband optical absorption coefficients and refraction index for several values of the dressing laser parameter and for some specific values of the electric field applied along the growth direction of the heterostructure. It is concluded from our study that the peaks in the optical absorption spectrum have redshifts or blueshifts as a function of the laser parameter and the electric field. These parameters could be suitable tools for tuning the electronic and optical properties of the multibarrier structure.

  14. Optical studies on individual transitions in GaN:Zn,Si/AlGaN heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Mohajerani, Matin; Behrends, Arne; Bakin, Andrey; Waag, Andreas [Institute for Semiconductor Technology, Braunschweig (Germany); Peters, Silke; Hofer, Helmut; Schmunk, Waldemar; Kueck, Stefan [Physikalisch-Technische Bundesanstalt, Bundesallee 100, 38116 Braunschweig (Germany)

    2012-07-01

    During the past few years many methods have been developed to generate single-photon sources including atoms, ions, molecules or impurities in semiconductors and quantum dots. In this work, we have investigated Si and Zn co-doped GaN/AlGaN heterostructures. This approach could potentially allow room temperature electrically driven single photon emission. The samples studied were fabricated by metal-organic chemical vapor deposition and were patterned by photolithography and plasma etching processes in 3D pillar structures in order to confine individual emitters. Photoluminescence (PL) images were obtained by a confocal fluorescence microscope with a spatial resolution of 0.3 {mu}m and focal resolution of 0.5 {mu}m demonstrating well separated pillars. PL spectra measured under 325 nm He-Cd laser excitation show a broad emission around 2.9 eV (blue luminescence band) which is attributed to transition between the shallow donor band and the Zn deep acceptor. In addition, time-resolved PL was utilized to study the recombination lifetime of the BL transitions by 375 nm pulsed laser excitation. The potential of the GaN:Zn system for single photon emission is discussed in detail.

  15. New approach to local anodic oxidation of semiconductor heterostructures

    International Nuclear Information System (INIS)

    Martaus, Jozef; Gregusova, Dagmar; Cambel, Vladimir; Kudela, Robert; Soltys, Jan

    2008-01-01

    We have experimentally explored a new approach to local anodic oxidation (LAO) of a semiconductor heterostructures by means of atomic force microscopy (AFM). We have applied LAO to an InGaP/AlGaAs/GaAs heterostructure. Although LAO is usually applied to oxidize GaAs/AlGaAs/GaAs-based heterostructures, the use of the InGaP/AlGaAs/GaAs system is more advantageous. The difference lies in the use of different cap layer materials: Unlike GaAs, InGaP acts like a barrier material with respect to the underlying AlGaAs layer and has almost one order of magnitude lower density of surface states than GaAs. Consequently, the InGaP/AlGaAs/GaAs heterostructure had the remote Si-δ doping layer only 6.5 nm beneath the surface and the two-dimensional electron gas (2DEG) was confined only 23.5 nm beneath the surface. Moreover, InGaP unaffected by LAO is a very durable material in various etchants and allows us to repeatedly remove thin portions of the underlying AlGaAs layer via wet etching. This approach influences LAO technology fundamentally: LAO was used only to oxidize InGaP cap layer to define very narrow (∼50 nm) patterns. Subsequent wet etching was used to form very narrow and high-energy barriers in the 2DEG patterns. This new approach is promising for the development of future nano-devices operated both at low and high temperatures

  16. Laser-induced nonsequential double ionization at and above the recollision-excitation-tunneling threshold

    International Nuclear Information System (INIS)

    Shaaran, T.; Figueira de Morisson Faria, C.; Nygren, M. T.

    2010-01-01

    We perform a rigorous, semianalytic study of the recollision excitation with subsequent tunneling ionization (RESI) mechanism in laser-induced nonsequential double ionization (NSDI), based on the strong-field approximation. We show that the shapes of the electron momentum distributions carry information about the bound state with which the first electron collides, the bound state to which the second electron is excited, and the type of electron-electron interaction. Furthermore, one may define a driving-field intensity threshold for the RESI physical mechanism. At the threshold, the kinetic energy of the first electron, upon return, is just sufficient to excite the second electron. We compute the distributions for helium and argon in the threshold and above-threshold intensity regimes. In the latter case, we relate our findings to existing experiments. The electron momentum distributions encountered are symmetric with respect to all quadrants of the plane spanned by the momentum components parallel to the laser-field polarization, instead of concentrating on only the second and fourth quadrants. The above-mentioned momentum constraints, together with the strong dependence of the distributions on the bound states involved, may be important for singling out the RESI mechanism in actual physical situations and using NSDI in ultrafast imaging.

  17. Photocatalytic activity of Ag3PO4 nanoparticle/TiO2 nanobelt heterostructures

    Science.gov (United States)

    Liu, Ruoyu; Hu, Peiguang; Chen, Shaowei

    2012-10-01

    Heterostructures based on Ag3PO4 nanoparticles and TiO2 nanobelts were prepared by a coprecipitation method. The crystalline structures were characterized by X-ray diffraction measurements. Electron microscopic studies showed that the Ag3PO4 nanoparticles and TiO2 nanobelts were in intimate contact which might be exploited to facilitate charge transfer between the two semiconductor materials. In fact, the heterostructures exhibited markedly enhanced photocatalytic activity as compared with unmodified TiO2 nanobelts or commercial TiO2 colloids in the photodegradation of methyl orange under UV irradiation. This was accounted for by the improved efficiency of interfacial charge separation thanks to the unique alignments of their band structures. Remarkably, whereas the photocatalytic activity of the heterostructure was comparable to that of Ag3PO4 nanoparticles alone, the heterostructures exhibited significantly better stability and reusability in repeated tests than the Ag3PO4 nanoparticles.

  18. Organic p-n heterostructures and superlattices

    Energy Technology Data Exchange (ETDEWEB)

    Kowarik, Stefan [Lawrence Berkeley National Laboratory, Berkeley, CA (United States); Hinderhofer, Alexander; Gerlach, Alexander; Schreiber, Frank [Institut fuer Angewandte Physik, Tuebingen (Germany); Osso, Oriol [MATGAS 2000 A.I.E., Esfera UAB, Barcelona (Spain); Wang, Cheng; Hexemer, Alexander [Advanced Light Source, Berkeley, CA (United States)

    2009-07-01

    For many applications of organic semiconductors two components such as e.g. n and p-type layers are required, and the morphology of such heterostructures is crucial for their performance. Pentacene (PEN) is one of the most promising p-type molecular semiconductors and recently perfluoro-pentacene (PFP) has been identified as a good electron conducting material for complementary circuits with PEN. We use soft and hard X-ray reflectivity measurements, scanning transmission X-ray microscopy (STXM) and atomic force microscopy for structural investigations of PFP-PEN heterostructures. The chemical contrast between PEN and PFP in STXM allows us to determine the lateral length scales of p and n domains in a bilayer. For a superlattice of alternating PFP and PEN layers grown by organic molecular beam deposition, X-ray reflectivity measurements demonstrate good structural order. We find a superlattice reflection that varies strongly when tuning the X-ray energy around the fluorine edge, demonstrating that there are indeed alternating PFP and PEN layers.

  19. Full-Field Strain Mapping at a Ge/Si Heterostructure Interface

    Directory of Open Access Journals (Sweden)

    Buwen Cheng

    2013-05-01

    Full Text Available The misfit dislocations and strain fields at a Ge/Si heterostructure interface were investigated experimentally using a combination of high-resolution transmission electron microscopy and quantitative electron micrograph analysis methods. The type of misfit dislocation at the interface was determined to be 60° dislocation and 90° full-edge dislocation. The full-field strains at the Ge/Si heterostructure interface were mapped by using the geometric phase analysis (GPA and peak pairs analysis (PPA, respectively. The effect of the mask size on the GPA and PPA results was analyzed in detail. For comparison, the theoretical strain fields of the misfit dislocations were also calculated by the Peierls-Nabarro and Foreman dislocation models. The results showed that the optimal mask sizes in GPA and PPA were approximately three tenths and one-tenth of the reciprocal lattice vector, respectively. The Foreman dislocation model with an alterable factor a = 4 can best describe the strain field of the misfit dislocation at the Ge/Si heterostructure interface.

  20. GaAs FETs and novel heteroepitaxial quaternary lasers grown on InP substrates by organometallic chemical vapor deposition

    International Nuclear Information System (INIS)

    Lo, Y.H.; Bhat, R.; Chang-Hasnain, C.; Caneau, C.; Zah, C.E.; Lee, T.P.

    1988-01-01

    This paper reports the GaAs MESFETs and 1.3μm buried hetero-structure lasers with AlGaAs/GaAs lateral confinement layers simultaneously grown by OMCVD and fabricated on InP structures. The 1μm recessed gate MESFET has a transconductance of 220 mS/mm and the novel structured laser has a CW threshold current of 45 mA. The heteroepitaxy technology and devices show great promises for long wavelength opto-electronic integrated circuits

  1. Optimal emission enhancement in orthogonal double-pulse laser-induced breakdown spectroscopy

    International Nuclear Information System (INIS)

    Sanginés, R.; Contreras, V.; Sobral, H.; Robledo-Martinez, A.

    2015-01-01

    Orthogonal double-pulse (DP) laser-induced breakdown spectroscopy (LIBS) was performed using reheating and pre-ablative configurations. The ablation pulse power density was varied by two orders of magnitude and the DP experiments were carried out for a wide range of interpulse delays. For both DP-LIBS schemes, the signal enhancement was evaluated with respect to the corresponding single-pulse (SP) LIBS as a function of the interpulse delay. The reheating scheme shows a sharp maximum signal enhancement of up to 200-fold for low ablative power densities (0.4 GW cm −2 ); however, for power densities larger than 10 GW cm −2 this configuration did not improve the SP outcome. On the other hand, a more uniform signal enhancement of about 4–6 was obtained for the pre-ablative scheme nearly independently of the used ablative power density. In terms of the signal-to-noise ratio (SNR) the pre-ablative scheme shows a monotonic increment with the ablative power density. Whereas the reheating configuration reaches a maximum at 2.2 GW cm −2 , its enhancement effect collapses markedly for fluencies above 10 GW cm −2 . - Highlights: • Comparison of reheating and pre-ablative double-pulse LIBS was done using a wide range of ablation power densities. • Experimental parameters that could achieve optimal signal-to-noise ratio were investigated. • A reheating scheme is better for low-ablation power densities. • A pre-ablative configuration is better for high-ablation power densities

  2. GaN/NbN epitaxial semiconductor/superconductor heterostructures

    Science.gov (United States)

    Yan, Rusen; Khalsa, Guru; Vishwanath, Suresh; Han, Yimo; Wright, John; Rouvimov, Sergei; Katzer, D. Scott; Nepal, Neeraj; Downey, Brian P.; Muller, David A.; Xing, Huili G.; Meyer, David J.; Jena, Debdeep

    2018-03-01

    Epitaxy is a process by which a thin layer of one crystal is deposited in an ordered fashion onto a substrate crystal. The direct epitaxial growth of semiconductor heterostructures on top of crystalline superconductors has proved challenging. Here, however, we report the successful use of molecular beam epitaxy to grow and integrate niobium nitride (NbN)-based superconductors with the wide-bandgap family of semiconductors—silicon carbide, gallium nitride (GaN) and aluminium gallium nitride (AlGaN). We apply molecular beam epitaxy to grow an AlGaN/GaN quantum-well heterostructure directly on top of an ultrathin crystalline NbN superconductor. The resulting high-mobility, two-dimensional electron gas in the semiconductor exhibits quantum oscillations, and thus enables a semiconductor transistor—an electronic gain element—to be grown and fabricated directly on a crystalline superconductor. Using the epitaxial superconductor as the source load of the transistor, we observe in the transistor output characteristics a negative differential resistance—a feature often used in amplifiers and oscillators. Our demonstration of the direct epitaxial growth of high-quality semiconductor heterostructures and devices on crystalline nitride superconductors opens up the possibility of combining the macroscopic quantum effects of superconductors with the electronic, photonic and piezoelectric properties of the group III/nitride semiconductor family.

  3. Alignment effects in two-photon double ionization of H2 in femtosecond xuv laser pulses

    International Nuclear Information System (INIS)

    Guan Xiaoxu; Bartschat, Klaus; Schneider, Barry I.

    2011-01-01

    Triple-differential cross sections for two-photon double ionization of the aligned hydrogen molecule at the equilibrium distance are presented for a central photon energy of 30 eV. The temporal response of the laser-driven molecule is investigated by solving the time-dependent Schroedinger equation in full dimensionality using two-center elliptical coordinates and a finite-element discrete-variable-representation approach. The molecular orientation is found to have a strong effect on the emission modes of the two correlated photoelectrons. This molecular effect is most noticeable when the molecular axis and the laser polarization vector are oriented parallel to each other. For intermediate cases between the parallel and perpendicular geometries, the dominant emission modes for two-electron ejection oscillate between those for the two extreme cases. The contributions from different ionization channels are also analyzed in detail. Depending on the emission direction of the reference electron, the interference contributions from the various channels can be constructive or destructive at small alignment angles, while they always contribute constructively to the triple-differential cross sections near the perpendicular geometry.

  4. Thermal response in van der Waals heterostructures

    KAUST Repository

    Gandi, Appala; Alshareef, Husam N.; Schwingenschlö gl, Udo

    2016-01-01

    We solve numerically the Boltzmann transport equations of the phonons and electrons to understand the thermoelectric response in heterostructures of M2CO2 (M: Ti, Zr, Hf) MXenes with transition metal dichalcogenide monolayers. Low frequency optical

  5. Electronic structure robustness and design rules for 2D colloidal heterostructures

    Science.gov (United States)

    Chu, Audrey; Livache, Clément; Ithurria, Sandrine; Lhuillier, Emmanuel

    2018-01-01

    Among the colloidal quantum dots, 2D nanoplatelets present exceptionally narrow optical features. Rationalizing the design of heterostructures of these objects is of utmost interest; however, very little work has been focused on the investigation of their electronic properties. This work is organized into two main parts. In the first part, we use 1D solving of the Schrödinger equation to extract the effective masses for nanoplatelets (NPLs) of CdSe, CdS, and CdTe and the valence band offset for NPL core/shell of CdSe/CdS. In the second part, using the determined parameters, we quantize how the spectra of the CdSe/CdS heterostructure get affected by (i) the application of an electric field and (ii) by the presence of a dull interface. We also propose design strategies to make the heterostructure even more robust.

  6. Uniform photoresponse in thermally oxidized Ni and MoS2 heterostructures

    International Nuclear Information System (INIS)

    Luo, Wei; Peng, Gang; Wang, Fei; Miao, Feng; Zhang, Xue-Ao; Qin, Shiqiao

    2017-01-01

    Non-uniform photocurrent is usually generated at the overlapped region of the heterostructures, and its potential applications may be hindered by the spatial uniformity issue of the device photoresponse. Here, nearly a uniform photoresponse at the overlapped region of the thermally oxidized Ni and molybdenum disulphide (MoS 2 ) heterostructures is obtained. Further characterizations reveal that several nanometers Ni is rightly under the NiO x layer formed at the surface of the film in the oxidation process. The heterostructures based on layered MoS 2 /NiO x /Ni with highly conductive bottom Ni show a high uniform photoresponse with an external quantum efficiency (EQE) of 1.4% at 532 nm. Moreover, successful integration of multiple devices suggests a great priority for such a structure for highly integrated uniform photodetectors. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  7. Radical-source molecular beam epitaxy of ZnO-based heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Sadofiev, Sergey

    2009-10-27

    This work focuses on the development of the novel growth approaches for the fabrication of Group II-oxide materials in the form of epitaxial films and heterostructures. It is shown that molecular-beam epitaxial growth far from thermal equilibrium allows one to overcome the standard solubility limit and to alloy ZnO with MgO or CdO in strict wurtzite phase up to mole fractions of several 10 %. In this way, a band-gap range from 2.2 to 4.4 eV can be covered. A clear layer-by-layer growth mode controlled by oscillations in reflection high-energy electron diffraction makes it possible to fabricate atomically smooth heterointerfaces and well-defined quantum well structures exhibiting prominent band-gap related light emission in the whole composition range. On appropriately designed structures, laser action from the ultraviolet down to green wavelengths and up to room temperature is achieved. The properties and potential of the ''state-of-the-art'' materials are discussed in relation to the advantages for their applications in various optoelectronic devices. (orig.)

  8. Si/SiC-based DD hetero-structure IMPATTs as MM-wave power-source: a generalized large-signal analysis

    International Nuclear Information System (INIS)

    Mukherjee, Moumita; Tripathy, P. R.; Pati, S. P.

    2015-01-01

    A full-scale, self-consistent, non-linear, large-signal model of double-drift hetero-structure IMPATT diode with general doping profile is derived. This newly developed model, for the first time, has been used to analyze the large-signal characteristics of hexagonal SiC-based double-drift IMPATT diode. Considering the fabrication feasibility, the authors have studied the large-signal characteristics of Si/SiC-based hetero-structure devices. Under small-voltage modulation (∼ 2%, i.e. small-signal conditions) results are in good agreement with calculations done using a linearised small-signal model. The large-signal values of the diode's negative conductance (5 × 10 6 S/m 2 ), susceptance (10.4 × 10 7 S/m 2 ), average breakdown voltage (207.6 V), and power generating efficiency (15%, RF power: 25.0 W at 94 GHz) are obtained as a function of oscillation amplitude (50% of DC breakdown voltage) for a fixed average current density. The large-signal calculations exhibit power and efficiency saturation for large-signal (> 50%) voltage modulation and thereafter decrease gradually with further increasing voltage-modulation. This generalized large-signal formulation is applicable for all types of IMPATT structures with distributed and narrow avalanche zones. The simulator is made more realistic by incorporating the space-charge effects, realistic field and temperature dependent material parameters in Si and SiC. The electric field snap-shots and the large-signal impedance and admittance of the diode with current excitation are expressed in closed loop form. This study will act as a guide for researchers to fabricate a high-power Si/SiC-based IMPATT for possible application in high-power MM-wave communication systems. (paper)

  9. Numerical simulation of heat transfer and fluid flow during double-sided laser beam welding of T-joints for aluminum aircraft fuselage panels

    Science.gov (United States)

    Yang, Zhibin; Tao, Wang; Li, Liqun; Chen, Yanbin; Shi, Chunyuan

    2017-06-01

    In comparison with conventional laser beam welding, double-sided laser beam welding has two laser heat sources simultaneously and symmetrically loaded from both sides makes it to be a more complicated coupled heat transport and fluid flow process. In this work, in order to understand the heat transfer and fluid flow, a three-dimensional model was developed and validated with the experimental results. The temperature field, fluid flow field, and keyhole characteristic were calculated using the developed model by FLUENT software. Calculated results indicated that the temperature and fluid flow fields were bilateral symmetry along the stringer center, and the molten pool maximum length was located near the keyhole intersection position. The skin side had higher temperature and faster cooling speed. Several characteristic flow patterns in the weld pool cross section, including the vortexes flows near the keyhole opening position, the convection flows above the keyhole intersection location, the regularity downward flows at the molten pool bottom. And in the lengthwise section, a distinct vortex flow below the keyhole, and the liquid metal behind the keyhole first flowed to near the molten pool maximum length location and then to the molten pool surface. Perpendicular to and along welding direction the keyhole liquid metal flowed to the weld molten pool surface and around the keyhole, respectively. The special temperature fields and fluid flow patterns were closely related to the effects of the double sides' laser energy coupling and enhancement. The calculated weld pool geometry basically in good agreement with the experimental results indicated that the developed model was validity and reasonable.

  10. Size-tunable band alignment and optoelectronic properties of transition metal dichalcogenide van der Waals heterostructures

    Science.gov (United States)

    Zhao, Yipeng; Yu, Wangbing; Ouyang, Gang

    2018-01-01

    2D transition metal dichalcogenide (TMDC)-based heterostructures exhibit several fascinating properties that can address the emerging market of energy conversion and storage devices. Current achievements show that the vertical stacked TMDC heterostructures can form type II band alignment and possess significant optoelectronic properties. However, a detailed analytical understanding of how to quantify the band alignment and band offset as well as the optimized power conversion efficiency (PCE) is still lacking. Herein, we propose an analytical model to exhibit the PCEs of TMDC van der Waals (vdW) heterostructures and explore the intrinsic mechanism of photovoltaic conversion based on the detailed balance principle and atomic-bond-relaxation correlation mechanism. We find that the PCE of monolayer MoS2/WSe2 can be up to 1.70%, and that of the MoS2/WSe2 vdW heterostructures increases with thickness, owing to increasing optical absorption. Moreover, the results are validated by comparing them with the available evidence, providing realistic efficiency targets and design principles. Highlights • Both electronic and optoelectronic models are developed for vertical stacked MoS2/WSe2 heterostructures. • The underlying mechanism on size effect of electronic and optoelectronic properties for vertical stacked MoS2/WSe2 heterostructures is clarified. • The macroscopically measurable quantities and the microscopical bond identities are connected.

  11. 1.3μm low threshold distributed feedback lasers for high bit-rate applications

    International Nuclear Information System (INIS)

    Artigue, C.; Louis, Y.; Padioleau, C.; Poingt, F.; Sigogne, D.; Starck, C.; Benoit, J.

    1985-01-01

    A low threshold current (≅ 30 mA) 1.3μm (InGaAsP) second order DFB laser with a ridge structure made by liquid phase epitaxy is reported. The low threshold results from: optimized heterostructure and grating profile, good tuning of the DFB wavelength with the peak gain wavelength, and the proper LPE regrowth conditions on the grating

  12. Synthesis and photoluminescence properties of comb-like CdS nanobelt/ZnO nanorod heterostructures

    International Nuclear Information System (INIS)

    Lan Changyong; Gong Jiangfeng; Liu Chunming

    2012-01-01

    Highlights: ► Comb-like CdS nanobelt/ZnO nanorod heterostructures were synthesized. ► ZnO nanorods epitaxially grew on the (1 0 0) surface of the CdS nanobelts along [1 0 0]. ► A preliminary growth mechanism was proposed. - Abstract: Comb-like CdS nanobelt/ZnO nanorod heterostructures were synthesized by a two-stage method. X-ray diffractometer, scanning electron microscopy, transmission electron microscopy were used to characterize and analyze the as-synthesized products. The results demonstrate that the CdS nanobelt backbones grow along [2 1 0] and the ZnO nanorod branches epitaxially grow on the (0 0 1) surface of the CdS nanobelt with a growth direction of [0 0 1]. The as-prepared heterostructures exhibit an important feature of single-crystallinity. At room temperature, the comb-like CdS nanobelt/ZnO nanorod heterostructures show strong green emission.

  13. Double-pulse laser-induced breakdown spectroscopy analysis of scales from petroleum pipelines

    International Nuclear Information System (INIS)

    o – CEP 24210-346 – Niterói, Rio de Janeiro (Brazil))" data-affiliation=" (Physics Department of University Federal Fluminense, Av. Gal. Milton Tavares de Souza, s/no – CEP 24210-346 – Niterói, Rio de Janeiro (Brazil))" >Cavalcanti, G.H.; Rocha, A.A.; Damasceno, R.N.; Legnaioli, S.; Lorenzetti, G.; Pardini, L.; Palleschi, V.

    2013-01-01

    Pipeline scales from the Campos Bay Petroleum Field near Rio de Janeiro, Brazil have been analyzed by both Raman spectroscopy and by laser-induced breakdown spectroscopy (LIBS) using a double-pulse, calibration-free approach. Elements that are characteristic of petroleum (e.g. C, H, N, O, Mg, Na, Fe and V) were detected, in addition to the Ca, Al, and Si which form the matrix of the scale. The LIBS results were compared with the results of micro-Raman spectroscopy, which confirmed the nature of the incrustations inferred by the LIBS analysis. Results of this preliminary study suggest that diffusion of pipe material into the pipeline intake column plays an important role in the growth of scale. Thanks to the simplicity and relative low cost of equipment and to the fact that no special chemical pre-treatment of the samples is needed, LIBS can offer very fast acquisition of data and the possibility of in situ measurements. LIBS could thus represent an alternative or complementary method for the chemical characterization of the scales by comparison to conventional analytical techniques, such as X-ray diffraction or X-ray fluorescence. - Highlights: • Samples of scales from petroleum pipelines were analyzed using double pulse LIBS. • LIBS is proposed as an alternative method to conventional analytical techniques. • The scale growth is influenced by the product of corrosion in the column of production. • The diffusion of pipe material into the inlay is important for the growth of scale

  14. Spin-orbit controlled capacitance of a polar heterostructure

    Energy Technology Data Exchange (ETDEWEB)

    Steffen, Kevin; Kopp, Thilo [Center for Electronic Correlations and Magnetism, EP VI, Institute of Physics, University of Augsburg, 86135 Augsburg (Germany); Loder, Florian [Center for Electronic Correlations and Magnetism, EP VI and TP III, Institute of Physics, University of Augsburg, 86135 Augsburg (Germany)

    2015-07-01

    Oxide heterostructures with polar films display special electronic properties, such as the electronic reconstruction at their internal interfaces with the formation of two-dimensional metallic states. Moreover, the electrical field from the polar layers is inversion-symmetry breaking and may generate a strong Rashba spin-orbit coupling (RSOC) in the interfacial electronic system. We investigate the capacitance of a heterostructure in which a strong RSOC at a metallic interface is controlled by the electric field of a surface electrode. Such a structure is for example given by a LaAlO{sub 3} film on a SrTiO{sub 3} substrate which is gated by a top electrode. We find that due to a strong RSOC the capacitance can be larger than the classical geometric value.

  15. Tunable intraparticle frameworks for creating complex heterostructured nanoparticle libraries

    Science.gov (United States)

    Fenton, Julie L.; Steimle, Benjamin C.; Schaak, Raymond E.

    2018-05-01

    Complex heterostructured nanoparticles with precisely defined materials and interfaces are important for many applications. However, rationally incorporating such features into nanoparticles with rigorous morphology control remains a synthetic bottleneck. We define a modular divergent synthesis strategy that progressively transforms simple nanoparticle synthons into increasingly sophisticated products. We introduce a series of tunable interfaces into zero-, one-, and two-dimensional copper sulfide nanoparticles using cation exchange reactions. Subsequent manipulation of these intraparticle frameworks yielded a library of 47 distinct heterostructured metal sulfide derivatives, including particles that contain asymmetric, patchy, porous, and sculpted nanoarchitectures. This generalizable mix-and-match strategy provides predictable retrosynthetic pathways to complex nanoparticle features that are otherwise inaccessible.

  16. Influence of Au Nanoparticle Shape on Au@Cu2O Heterostructures

    OpenAIRE

    Zhu, Jie; Lu, Na; Chen, Wei; Kong, Lina; Yang, Yun; Ma, Dekun; Huang, Shaoming

    2015-01-01

    Synthesis of metal-semiconductor heterostructures may allow the combination of function of the corresponding components and/or the enhanced performance resulting from the interactions between all the components. In this paper, Au@Cu2O core-shell heterostructures are prepared by a seed-growth method, using different-shaped Au nanocrystals as the seeds such as nanorods, octahedra, decahedra, dots, and nanocubes. The results revealed that the final structure of Au@Cu2O was greatly influenced by ...

  17. Design lateral heterostructure of monolayer ZrS2 and HfS2 from first principles calculations

    Science.gov (United States)

    Yuan, Junhui; Yu, Niannian; Wang, Jiafu; Xue, Kan-Hao; Miao, Xiangshui

    2018-04-01

    The successful fabrication of two-dimensional lateral heterostructures (LHS's) has opened up unprecedented opportunities in material science and device physics. It is therefore highly desirable to search for more suitable materials to create such heterostructures for next-generation devices. Here, we investigate a novel lateral heterostructure composed of monolayer ZrS2 and HfS2 based on density functional theory. The phonon dispersion and ab initio molecular dynamics analysis indicate its good kinetic and thermodynamic stability. Remarkably, we find that these lateral heterostructures exhibit an indirect to direct bandgap transition, in contrast to the intrinsic indirect bandgap nature of ZrS2 and HfS2. The type-II alignment and chemical bonding across the interline have also been revealed. The tensile strain is proved to be an efficient way to modulate the band structure. Finally, we further discuss other three stable lateral heterostructures: (ZrSe2)2(HfSe2)2 LHS, (ZrS2)2(ZrSe2)2 LHS and (HfS2)2(HfSe2)2 LHS. Generally, the lateral heterostructures of monolayer ZrS2 and HfS2 are of excellent electrical properties, and may find potential applications for future electronic devices.

  18. One-pot growth of two-dimensional lateral heterostructures via sequential edge-epitaxy

    Science.gov (United States)

    Sahoo, Prasana K.; Memaran, Shahriar; Xin, Yan; Balicas, Luis; Gutiérrez, Humberto R.

    2018-01-01

    Two-dimensional heterojunctions of transition-metal dichalcogenides have great potential for application in low-power, high-performance and flexible electro-optical devices, such as tunnelling transistors, light-emitting diodes, photodetectors and photovoltaic cells. Although complex heterostructures have been fabricated via the van der Waals stacking of different two-dimensional materials, the in situ fabrication of high-quality lateral heterostructures with multiple junctions remains a challenge. Transition-metal-dichalcogenide lateral heterostructures have been synthesized via single-step, two-step or multi-step growth processes. However, these methods lack the flexibility to control, in situ, the growth of individual domains. In situ synthesis of multi-junction lateral heterostructures does not require multiple exchanges of sources or reactors, a limitation in previous approaches as it exposes the edges to ambient contamination, compromises the homogeneity of domain size in periodic structures, and results in long processing times. Here we report a one-pot synthetic approach, using a single heterogeneous solid source, for the continuous fabrication of lateral multi-junction heterostructures consisting of monolayers of transition-metal dichalcogenides. The sequential formation of heterojunctions is achieved solely by changing the composition of the reactive gas environment in the presence of water vapour. This enables selective control of the water-induced oxidation and volatilization of each transition-metal precursor, as well as its nucleation on the substrate, leading to sequential edge-epitaxy of distinct transition-metal dichalcogenides. Photoluminescence maps confirm the sequential spatial modulation of the bandgap, and atomic-resolution images reveal defect-free lateral connectivity between the different transition-metal-dichalcogenide domains within a single crystal structure. Electrical transport measurements revealed diode-like responses across the

  19. Interlayer coupling effects on Schottky barrier in the arsenene-graphene van der Waals heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Xia, Congxin, E-mail: xiacongxin@htu.edu.cn; Xue, Bin; Wang, Tianxing; Peng, Yuting [Department of Physic, Henan Normal University, Xinxiang 453007 (China); Jia, Yu [School of Physics and Engineering, Zhengzhou University, Zhengzhou 450052 (China)

    2015-11-09

    The electronic characteristics of arsenene-graphene van der Waals (vdW) heterostructures are studied by using first-principles methods. The results show that a linear Dirac-like dispersion relation around the Fermi level can be quite well preserved in the vdW heterostructures. Moreover, the p-type Schottky barrier (0.18 eV) to n-type Schottky barrier (0.31 eV) transition occurs when the interlayer distance increases from 2.8 to 4.5 Å, which indicates that the Schottky barrier can be tuned effectively by the interlayer distance in the vdW heterostructures.

  20. The effect of annealing atmosphere on magnetoelectric coupling of the La{sub 0.7}Sr{sub 0.3}MnO{sub 3}/BaTiO{sub 3} layered heterostructure

    Energy Technology Data Exchange (ETDEWEB)

    Li, Tingxian, E-mail: wxlltx@126.com [College of Physics and Electrical Engineering, Anyang Normal University, Anyang 455002 (China); Wang, Hongwei [School of Mathematics and Statistics, Anyang Normal University, Anyang 455002 (China); Ju, Lin; Tang, Zhenjie; Ma, Dongwei [College of Physics and Electrical Engineering, Anyang Normal University, Anyang 455002 (China); Li, Kuoshe [National Engineering Research Central for Rare earth Materials, Beijing 100088 (China)

    2015-10-15

    The epitaxial La{sub 0.7}Sr{sub 0.3}MnO{sub 3}/BaTiO{sub 3} (LSMO/BTO) layered heterostructure was grown on (001) oriented LaAlO{sub 3} single-crystal substrate by pulsed laser deposition. Our results showed that the in-situ annealing process in oxygen made the LSMO/BTO interface possess higher oxygen content than that of the one annealing in vacuum, which leaded to the LSMO film presented higher magnetic permeability and higher saturated magnetization. The P–E hystersis loop only could be detected in the sample annealing in oxygen. The ME voltage coefficient of the LSMO/BTO heterostructure annealing in oxygen was higher than that of the one annealing in vacuum, which suggested a more effective ME coupling. It was a combined effect of the two main ME coupling mechanisms, including strain mediation, and polarized carrier mediation.

  1. Controllable Schottky barrier in GaSe/graphene heterostructure: the role of interface dipole

    Science.gov (United States)

    Si, Chen; Lin, Zuzhang; Zhou, Jian; Sun, Zhimei

    2017-03-01

    The discoveries of graphene and other related two-dimensional crystals have recently led to a new technology: van der Waals (vdW) heterostructures based on these atomically thin materials. Such a paradigm has been proved promising for a wide range of applications from nanoelectronics to optoelectronics and spintronics. Here, using first-principles calculations, we investigate the electronic structure and interface characteristics of a newly synthesized GaSe/graphene (GaSe/g) vdW heterostructure. We show that the intrinsic electronic properties of GaSe and graphene are both well preserved in the heterostructure, with a Schottky barrier formed at the GaSe/g interface. More interestingly, the band alignment between graphene and GaSe can be effectively modulated by tuning the interfacial distance or applying an external electric filed. This makes the Schottky barrier height (SBH) controllable, which is highly desirable in the electronic and optoelectronic devices based on vdW heterostructures. In particular, the tunability of the interface dipole and potential step is further uncovered to be the underlying mechanism that ensures this controllable tuning of SBH.

  2. In situ catalytic growth of large-area multilayered graphene/MoS2 heterostructures

    Science.gov (United States)

    Fu, Wei; Du, Fei-Hu; Su, Juan; Li, Xin-Hao; Wei, Xiao; Ye, Tian-Nan; Wang, Kai-Xue; Chen, Jie-Sheng

    2014-04-01

    Stacking various two-dimensional atomic crystals on top of each other is a feasible approach to create unique multilayered heterostructures with desired properties. Herein for the first time, we present a controlled preparation of large-area graphene/MoS2 heterostructures via a simple heating procedure on Mo-oleate complex coated sodium sulfate under N2 atmosphere. Through a direct in situ catalytic reaction, graphene layer has been uniformly grown on the MoS2 film formed by the reaction of Mo species with S pecies, which is from the carbothermal reduction of sodium sulfate. Due to the excellent graphene ``painting'' on MoS2 atomic layers, the significantly shortened lithium ion diffusion distance and the markedly enhanced electronic conductivity, these multilayered graphene/MoS2 heterostructures exhibit high specific capacity, unprecedented rate performance and outstanding cycling stability, especially at a high current density, when used as an anode material for lithium batteries. This work provides a simple but efficient route for the controlled fabrication of large-area multilayered graphene/metal sulfide heterostructures with promising applications in battery manufacture, electronics or catalysis.

  3. Characterizing Accreting Double White Dwarf Binaries with the Laser Interferometer Space Antenna and Gaia

    Science.gov (United States)

    Breivik, Katelyn; Kremer, Kyle; Bueno, Michael; Larson, Shane L.; Coughlin, Scott; Kalogera, Vassiliki

    2018-02-01

    We demonstrate a method to fully characterize mass-transferring double white dwarf (DWD) systems with a helium-rich (He) white dwarf (WD) donor based on the mass–radius (M–R) relationship for He WDs. Using a simulated Galactic population of DWDs, we show that donor and accretor masses can be inferred for up to ∼60 systems observed by both Laser Interferometer Space Antenna (LISA) and Gaia. Half of these systems will have mass constraints {{Δ }} {M}{{D}} ≲ 0.2 {M}ȯ and {{Δ }} {M}{{A}} ≲ 2.3 {M}ȯ . We also show how the orbital frequency evolution due to astrophysical processes and gravitational radiation can be decoupled from the total orbital frequency evolution for up to ∼50 of these systems.

  4. Spin-polarizated transmissivity in an asymmetrical double barrier

    International Nuclear Information System (INIS)

    Teixeira, J D S; Frota, H O; Bittencourt, A C R

    2014-01-01

    The spin-polarized electron resonant tunnelling at zero magnetic field through a double barrier heterostructure like InAs/GaSb/InAs/GaSb/InAs has been calculated as a function of the electron energy. A model is proposed to study the combined effects of Dresselhaus and in-plane Rashba spin-orbit interactions on the spin-dependent tunnelling, taking into account the k 3 dependence of the Dresselhaus Hamiltonian. For the directions ϕ=45 ∘ and 135 ∘ the spin mixing produces a 100% efficiency of polarization. Moreover, the effect of the Dresselhaus and Rashba spin-orbit interactions are shown to be quite favorable for the fabrication of spin filters and spintronic devices. (paper)

  5. Small signal modulation characteristics of red-emitting (λ = 610 nm) III-nitride nanowire array lasers on (001) silicon

    KAUST Repository

    Jahangir, Shafat; Frost, Thomas; Hazari, Arnab; Yan, Lifan; Stark, Ethan; LaMountain, Trevor; Millunchick, Joanna M.; Ooi, Boon S.; Bhattacharya, Pallab

    2015-01-01

    The small signal modulation characteristics of an InGaN/GaN nanowire array edge- emitting laser on (001) silicon are reported. The emission wavelength is 610 nm. Lattice matched InAlN cladding layers were incorporated in the laser heterostructure for better mode confinement. The suitability of the nanowire lasers for use in plastic fiber communication systems with direct modulation is demonstrated through their modulation bandwidth of f-3dB,max = 3.1 GHz, very low values of chirp (0.8 Å) and α-parameter, and large differential gain (3.1 × 10-17 cm2).

  6. Small signal modulation characteristics of red-emitting (λ = 610 nm) III-nitride nanowire array lasers on (001) silicon

    KAUST Repository

    Jahangir, Shafat

    2015-02-16

    The small signal modulation characteristics of an InGaN/GaN nanowire array edge- emitting laser on (001) silicon are reported. The emission wavelength is 610 nm. Lattice matched InAlN cladding layers were incorporated in the laser heterostructure for better mode confinement. The suitability of the nanowire lasers for use in plastic fiber communication systems with direct modulation is demonstrated through their modulation bandwidth of f-3dB,max = 3.1 GHz, very low values of chirp (0.8 Å) and α-parameter, and large differential gain (3.1 × 10-17 cm2).

  7. A InGaN/GaN quantum dot green (λ=524 nm) laser

    KAUST Repository

    Zhang, Meng

    2011-01-01

    The characteristics of self-organized InGaN/GaN quantum dot lasers are reported. The laser heterostructures were grown on c-plane GaN substrates by plasma-assisted molecular beam epitaxy and the laser facets were formed by focused ion beam etching with gallium. Emission above threshold is characterized by a peak at 524 nm (green) and linewidth of 0.7 nm. The lowest measured threshold current density is 1.2 kA/ cm2 at 278 K. The slope and wall plug efficiencies are 0.74 W/A and ∼1.1%, respectively, at 1.3 kA/ cm 2. The value of T0 =233 K in the temperature range of 260-300 K. © 2011 American Institute of Physics.

  8. Homogeneous CdTe quantum dots-carbon nanotubes heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Vieira, Kayo Oliveira [Grupo de Pesquisa em Química de Materiais – (GPQM), Departamento de Ciências Naturais, Universidade Federal de São João del-Rei, Campus Dom Bosco, Praça Dom Helvécio, 74, CEP 36301-160, São João del-Rei, MG (Brazil); Bettini, Jefferson [Laboratório Nacional de Nanotecnologia, Centro Nacional de Pesquisa em Energia e Materiais, CEP 13083-970, Campinas, SP (Brazil); Ferrari, Jefferson Luis [Grupo de Pesquisa em Química de Materiais – (GPQM), Departamento de Ciências Naturais, Universidade Federal de São João del-Rei, Campus Dom Bosco, Praça Dom Helvécio, 74, CEP 36301-160, São João del-Rei, MG (Brazil); Schiavon, Marco Antonio, E-mail: schiavon@ufsj.edu.br [Grupo de Pesquisa em Química de Materiais – (GPQM), Departamento de Ciências Naturais, Universidade Federal de São João del-Rei, Campus Dom Bosco, Praça Dom Helvécio, 74, CEP 36301-160, São João del-Rei, MG (Brazil)

    2015-01-15

    The development of homogeneous CdTe quantum dots-carbon nanotubes heterostructures based on electrostatic interactions has been investigated. We report a simple and reproducible non-covalent functionalization route that can be accomplished at room temperature, to prepare colloidal composites consisting of CdTe nanocrystals deposited onto multi-walled carbon nanotubes (MWCNTs) functionalized with a thin layer of polyelectrolytes by layer-by-layer technique. Specifically, physical adsorption of polyelectrolytes such as poly (4-styrene sulfonate) and poly (diallyldimethylammonium chloride) was used to deagglomerate and disperse MWCNTs, onto which we deposited CdTe quantum dots coated with mercaptopropionic acid (MPA), as surface ligand, via electrostatic interactions. Confirmation of the CdTe quantum dots/carbon nanotubes heterostructures was done by transmission and scanning electron microscopies (TEM and SEM), dynamic-light scattering (DLS) together with absorption, emission, Raman and infrared spectroscopies (UV–vis, PL, Raman and FT-IR). Almost complete quenching of the PL band of the CdTe quantum dots was observed after adsorption on the MWCNTs, presumably through efficient energy transfer process from photoexcited CdTe to MWCNTs. - Highlights: • Highly homogeneous CdTe-carbon nanotubes heterostructures were prepared. • Simple and reproducible non-covalent functionalization route. • CdTe nanocrystals homogeneously deposited onto multi-walled carbon nanotubes. • Efficient energy transfer process from photoexcited CdTe to MWCNTs.

  9. In situ degradation studies of two-dimensional WSe₂-graphene heterostructures.

    Science.gov (United States)

    Wang, B; Eichfield, S M; Wang, D; Robinson, J A; Haque, M A

    2015-09-14

    Heterostructures of two-dimensional materials can be vulnerable to thermal degradation due to structural and interfacial defects as well as thermal expansion mismatch, yet a systematic study does not exist in the literature. In this study, we investigate the degradation of freestanding WSe2-graphene heterostructures due to heat and charge flow by performing in situ experiments inside a transmission electron microscope. Experimental results show that purely thermal loading requires higher temperatures (>850 °C), about 150 °C higher than that under combined electrical and thermal loading. In both cases, selenium is the first element to decompose and migration of silicon atoms from the test structure to the freestanding specimen initiates rapid degradation through the formation of tungsten disilicide and silicon carbide. The role of the current flow is to enhance the migration of silicon from the sample holder and to knock-out the selenium atoms. The findings of this study provide fundamental insights into the degradation of WSe2-graphene heterostructures and inspire their application in electronics for use in harsh environments.

  10. Symmetry mismatch-driven perpendicular magnetic anisotropy for perovskite/brownmillerite heterostructures.

    Science.gov (United States)

    Zhang, Jing; Zhong, Zhicheng; Guan, Xiangxiang; Shen, Xi; Zhang, Jine; Han, Furong; Zhang, Hui; Zhang, Hongrui; Yan, Xi; Zhang, Qinghua; Gu, Lin; Hu, Fengxia; Yu, Richeng; Shen, Baogen; Sun, Jirong

    2018-05-15

    Grouping different transition metal oxides together by interface engineering is an important route toward emergent phenomenon. While most of the previous works focused on the interface effects in perovskite/perovskite heterostructures, here we reported on a symmetry mismatch-driven spin reorientation toward perpendicular magnetic anisotropy in perovskite/brownmillerite heterostructures, which is scarcely seen in tensile perovskite/perovskite heterostructures. We show that alternately stacking perovskite La 2/3 Sr 1/3 MnO 3 and brownmillerite LaCoO 2.5 causes a strong interface reconstruction due to symmetry discontinuity at interface: neighboring MnO 6 octahedra and CoO 4 tetrahedra at the perovskite/brownmillerite interface cooperatively relax in a manner that is unavailable for perovskite/perovskite interface, leading to distinct orbital reconstructions and thus the perpendicular magnetic anisotropy. Moreover, the perpendicular magnetic anisotropy is robust, with an anisotropy constant two orders of magnitude greater than the in-plane anisotropy of the perovskite/perovskite interface. The present work demonstrates the great potential of symmetry engineering in designing artificial materials on demand.

  11. Axial Ge/Si nanowire heterostructure tunnel FETs

    Energy Technology Data Exchange (ETDEWEB)

    Picraux, Sanuel T [Los Alamos National Laboratory; Daych, Shadi A [Los Alamos National Laboratory

    2010-01-01

    The vapor-liquid-solid (VLS) growth of semiconductor nanowires allows doping and composition modulation along their axis and the realization of axial 1 D heterostructures. This provides additional flexibility in energy band-edge engineering along the transport direction which is difficult to attain by planar materials growth and processing techniques. We report here on the design, growth, fabrication, and characterization of asymmetric heterostructure tunnel field-effect transistors (HTFETs) based on 100% compositionally modulated Si/Ge axial NWs for high on-current operation and low ambipolar transport behavior. We discuss the optimization of band-offsets and Schottky barrier heights for high performance HTFETs and issues surrounding their experimental realization. Our HTFET devices with 10 nm PECVD SiN{sub x} gate dielectric resulted in a measured current drive exceeding 100 {mu}A/{mu}m (I/{pi}D) and 10{sup 5} I{sub on}/I{sub off} ratios.

  12. Organoclay hybrid materials as precursors of porous ZnO/silica-clay heterostructures for photocatalytic applications

    Directory of Open Access Journals (Sweden)

    Marwa Akkari

    2016-12-01

    Full Text Available In this study, ZnO/SiO2-clay heterostructures were successfully synthesized by a facile two-step process applied to two types of clays: montmorillonite layered silicate and sepiolite microfibrous clay mineral. In the first step, intermediate silica–organoclay hybrid heterostructures were prepared following a colloidal route based on the controlled hydrolysis of tetramethoxysilane in the presence of the starting organoclay. Later on, pre-formed ZnO nanoparticles (NP dispersed in 2-propanol were incorporated under ultrasound irradiation to the silica–organoclay hybrid heterostructures dispersed in 2-propanol, and finally, the resulting solids were calcinated to eliminate the organic matter and to produce ZnO nanoparticles (NP homogeneously assembled to the clay–SiO2 framework. In the case of montmorillonite the resulting materials were identified as delaminated clays of ZnO/SiO2-clay composition, whereas for sepiolite, the resulting heterostructure is constituted by the assembling of ZnO NP to the sepiolite–silica substrate only affecting the external surface of the clay. The structural and morphological features of the prepared heterostructures were characterized by diverse physico-chemical techniques (such as XRD, FTIR, TEM, FE-SEM. The efficiency of these new porous ZnO/SiO2-clay heterostructures as potential photocatalysts in the degradation of organic dyes and the removal of pharmaceutical drugs in water solution was tested using methylene blue and ibuprofen compounds, respectively, as model of pollutants.

  13. Stacking order dependent mechanical properties of graphene/MoS{sub 2} bilayer and trilayer heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Elder, Robert M., E-mail: robert.elder26.ctr@mail.mil, E-mail: mahesh.neupane.ctr@mail.mil; Neupane, Mahesh R., E-mail: robert.elder26.ctr@mail.mil, E-mail: mahesh.neupane.ctr@mail.mil; Chantawansri, Tanya L. [U.S. Army Research Laboratory, Aberdeen Proving Ground, Maryland 21005 (United States)

    2015-08-17

    Transition metal dichalcogenides (TMDC) such as molybdenum disulfide (MoS{sub 2}) are two-dimensional materials that show promise for flexible electronics and piezoelectric applications, but their weak mechanical strength is a barrier to practical use. In this work, we perform nanoindentation simulations using atomistic molecular dynamics to study the mechanical properties of heterostructures formed by combining MoS{sub 2} with graphene. We consider both bi- and tri-layer heterostructures formed with MoS{sub 2} either supported or encapsulated by graphene. Mechanical properties, such as Young's modulus, bending modulus, ultimate tensile strength, and fracture strain, are extracted from nanoindentation simulations and compared to the monolayer and homogeneous bilayer systems. We observed that the heterostructures, regardless of the stacking order, are mechanically more robust than the mono- and bi-layer MoS{sub 2}, mainly due to the mechanical reinforcement provided by the graphene layer. The magnitudes of ultimate strength and fracture strain are similar for both the bi- and tri-layer heterostructures, but substantially larger than either the mono- and bi-layer MoS{sub 2}. Our results demonstrate the potential of graphene-based heterostructures to improve the mechanical properties of TMDC materials.

  14. Elemental and mineralogical imaging of a weathered limestone rock by double-pulse micro-Laser-Induced Breakdown Spectroscopy

    Science.gov (United States)

    Senesi, Giorgio S.; Campanella, Beatrice; Grifoni, Emanuela; Legnaioli, Stefano; Lorenzetti, Giulia; Pagnotta, Stefano; Poggialini, Francesco; Palleschi, Vincenzo; De Pascale, Olga

    2018-05-01

    The present work aims to evaluate the alteration conditions of historical limestone rocks exposed to urban environment using the Laser-Induced Breakdown Spectroscopy (LIBS) technique. The approach proposed is based on the microscale three dimensional (3D) compositional imaging of the sample through double-pulse micro-Laser-Induced Breakdown Spectroscopy (DP-μLIBS) in conjunction with optical microscopy. DP-μLIBS allows to perform a quick and detailed in-depth analysis of the composition of the weathered artifact by creating a 'virtual thin section' (VTS) of the sample which can estimate the extent of the alteration processes occurred at the limestone surface. The DP-μLIBS analysis of these thin sections showed a reduction with depth of the elements (mainly Fe, Si and Na) originating from atmospheric dust, particulate deposition and the surrounding environment (due to the proximity of the sea), whereas, the LIBS signal of Ca increased in intensity from the black crust to the limestone underneath.

  15. Numerical simulations of single and double ionization of H2 in short intense laser pulses

    International Nuclear Information System (INIS)

    Baier, Silvio

    2008-01-01

    Rescattering is the dominant process leading to double ionization in atoms and molecules interacting with linearly polarized laser pulses with wavelengths around 800 nm and in an intensity regime of 10 14 to 10 15 W/cm 2 . Using numerical integrations of the two-electron Schroedinger equation of the Hydrogen molecule in appropriate reduced dimensions two mechanisms, namely correlated emission of the electrons and excitation followed by field ionization after rescattering, could be identified and characterized. With the help of a planar model in reduced dimensions these mechanisms were quantitatively compared by their dependence on the molecular alignment with respect to the polarization axis. Two additional mechanisms, which are also related to rescattering, could be identified as well. (orig.)

  16. Synthesis of Freestanding Single-crystal Perovskite Films and Heterostructures by Etching of Sacrificial Water-soluble Layers

    Energy Technology Data Exchange (ETDEWEB)

    Lu, Di; Baek, David J.; Hong, Seung Sae; Kourkoutis, Lena F.; Hikita, Yasuyuki; Hwang, Harold Y.

    2016-08-22

    The ability to create and manipulate materials in two-dimensional (2D) form has repeatedly had transformative impact on science and technology. In parallel with the exfoliation and stacking of intrinsically layered crystals, atomic-scale thin film growth of complex materials has enabled the creation of artificial 2D heterostructures with novel functionality and emergent phenomena, as seen in perovskite heterostructures. However, separation of these layers from the growth substrate has proven challenging, limiting the manipulation capabilities of these heterostructures with respect to exfoliated materials. Here we present a general method to create freestanding perovskite membranes. The key is the epitaxial growth of water-soluble Sr3Al2O6 on perovskite substrates, followed by in situ growth of films and heterostructures. Millimetre-size single-crystalline membranes are produced by etching the Sr3Al2O6 layer in water, providing the opportunity to transfer them to arbitrary substrates and integrate them with heterostructures of semiconductors and layered compounds.

  17. Mixed Dimensional Van der Waals Heterostructures for Opto-Electronics.

    Science.gov (United States)

    Jariwala, Deep

    The isolation of a growing number of two-dimensional (2D) materials has inspired worldwide efforts to integrate distinct 2D materials into van der Waals (vdW) heterostructures. While a tremendous amount of research activity has occurred in assembling disparate 2D materials into ``all-2D'' van der Waals heterostructures, this concept is not limited to 2D materials alone. Given that any passivated, dangling bond-free surface will interact with another via vdW forces, the vdW heterostructure concept can be extended to include the integration of 2D materials with non-2D materials that adhere primarily through noncovalent interactions. In the first part of this talk I will present our work on emerging mixed-dimensional (2D + nD, where n is 0, 1 or 3) heterostructure devices performed at Northwestern University. I will present two distinct examples of gate-tunable p-n heterojunctions 1. Single layer n-type MoS2\\ (2D) combined with p-type semiconducting single walled carbon nanotubes (1D) and 2. Single layer MoS2 combined with 0D molecular semiconductor, pentacene. I will present the unique electrical properties, underlying charge transport mechanisms and photocurrent responses in both the above systems using a variety of scanning probe microscopy techniques as well as computational analysis. This work shows that van der Waals interactions are robust across different dimensionalities of materials and can allow fabrication of semiconductor devices with unique geometries and properties unforeseen in bulk semiconductors. Finally, I will briefly discuss our recent work from Caltech on near-unity absorption in atomically-thin photovoltaic devices. This work is supported by the Materials Research Center at Northwestern University, funded by the National Science Foundation (NSF DMR-1121262) and the Resnick Sustainability Institute at Caltech.

  18. Ag/CdS heterostructural composites: Fabrication, characterizations and photocatalysis

    International Nuclear Information System (INIS)

    Liu, Yang; Chi, Mei; Dong, Hailiang; Jia, Husheng; Xu, Bingshe; Zhang, Zhuxia

    2014-01-01

    Highlights: • Novel Ag/CdS core–shell heterostructural composites were fabricated using a two-step chemical method. • A formation mechanism of Ag/CdS heterostructural composites. • The photocatalytic activity of Ag/CdS heterostructural composites was found to be improved. • PL emissions are markedly quenched in the Ag/CdS composites than in CdS nanoparticles. - Abstract: Ag/CdS heterostructural materials were successfully synthesized by ultrasound-assisted polyols and hydrothermal method. Under hydrothermal condition, thiourea adsorbed on Ag nanowires releases S 2− ions, which react with vicinal Cd 2+ ions to form CdS clusters on Ag nanowires. Thereafter, the Ag/CdS composites grow into core–shell structure through CdS aggregation, Ostwald ripening, and preferential growth. The obtained core–shell structures and morphologies were investigated by XRD, SEM, and TEM; the experimental results indicate that the composites are composed of Ag nanowires serving as the core and CdS particles as the shell. The photocatalytic property of Ag/CdS core–shell materials was then investigated in detail. Comparing studies on the degradation of methylene blue were employed by using pure CdS, pure Ag, and Ag/CdS composites, respectively. The results show that the Ag/CdS composites possess higher photocatalytic degradation efficiency. Moreover, the Ag/CdS composites show improved stability, and the photocatalytic activity remains almost unchanged after four recycles. The enhanced photocatalytic effect for Ag/CdS composites is mainly attributed to the photogenerated electron transfer from CdS to Ag nanowire, while photogenerated holes still remain in CdS's valence band. Consequently, the effective separation of photogenerated electrons and holes and the resulting OH radicals improve the photocatalytic efficiency of Ag/CdS composites greatly

  19. Heterostructures for Realizing Magnon-Induced Spin Transfer Torque

    Directory of Open Access Journals (Sweden)

    P. B. Jayathilaka

    2012-01-01

    Full Text Available This work reports efforts fabricating heterostructures of different materials relevant for the realization of magnon-induced spin transfer torques. We find the growth of high-quality magnetite on MgO substrates to be straightforward, while using transition metal buffer layers of Fe, Cr, Mo, and Nb can alter the structural and magnetic properties of the magnetite. Additionally, we successfully fabricated and characterized Py/Cr/Fe3O4 and Fe3O4/Cr/Fe3O4 spin valve structures. For both, we observe a relatively small giant magnetoresistance and confirm an inverse dependence on spacer layer thickness. Thus, we have shown certain materials combinations that may form the heterostructures that are the building blocks necessary to achieve magnon-induced spin transfer torque devices.

  20. Influence of double- and triple-layer antireflection coatings on the formation of photocurrents in multijunction III–V solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Musalinov, S. B.; Anzulevich, A. P.; Bychkov, I. V. [Chelyabinsk State University (Russian Federation); Gudovskikh, A. S. [Russian Academy of Sciences, St. Petersburg Academic University (Russian Federation); Shvarts, M. Z., E-mail: shvarts@scell.ioffe.ru [Russian Academy of Sciences, Ioffe Physical–Technical Institute (Russian Federation)

    2017-01-15

    The results of simulation by the transfer-matrix method of TiO{sub 2}/SiO{sub 2} double-layer and TiO{sub 2}/Si{sub 3}N{sub 4}/SiO{sub 2} triple-layer antireflection coatings for multijunction InGaP/GaAs/Ge heterostructure solar cells are presented. The TiO{sub 2}/SiO{sub 2} double-layer antireflection coating is experimentally developed and optimized. The experimental spectral dependences of the external quantum yield of the InGaP/GaAs/Ge heterostructure solar cell and optical characteristics of antireflection coatings, obtained in the simulation, are used to determine the photogenerated current densities of each subcell in the InGaP/GaAs/Ge solar cell under AM1.5D irradiation conditions (1000 W/m{sup 2}) and for the case of zero reflection loss. It is shown in the simulation that the optimized TiO{sub 2}/Si{sub 3}N{sub 4}/SiO{sub 2} triple-layer antireflection coating provides a 2.3 mA/cm{sup 2} gain in the photocurrent density for the Ge subcell under AM1.5D conditions in comparison with the TiO{sub 2}/SiO{sub 2} double-layer antireflection coating under consideration. This thereby provides an increase in the fill factor of the current–voltage curve and in the output electric power of the multijunction solar cell.

  1. Compact blue laser devices based on nonlinear frequency upconversion

    International Nuclear Information System (INIS)

    Risk, W.P.

    1989-01-01

    This paper reports how miniature sources of coherent blue radiation can be produced by using nonlinear optical materials for frequency upconversion of the infrared radiation emitted by laser diodes. Direct upconversion of laser diode radiation is possible, but there are several advantages to using the diode laser to pump a solid-state laser which is then upconverted. In either case, the challenge is to find combinations of nonlinear materials and laser for efficient frequency upconversion. Several examples have been demonstrated. These include intracavity frequency doubling of a diode-pumped 946-nm Nd:YAG laser, intracavity frequency mixing of a 809-nm GaAlAs laser diode with a diode- pumped 1064-nm Nd:YAG laser, and direct frequency doubling of a 994-nm strained-layer InGaAs laser diode

  2. Designing Diameter-Modulated Heterostructure Nanowires of PbTe/Te by Controlled Dewetting.

    Science.gov (United States)

    Kumar, Abinash; Kundu, Subhajit; Samantaray, Debadarshini; Kundu, Paromita; Zanaga, Daniele; Bals, Sara; Ravishankar, N

    2017-12-13

    Heterostructures consisting of semiconductors with controlled morphology and interfaces find applications in many fields. A range of axial, radial, and diameter-modulated nanostructures have been synthesized primarily using vapor phase methods. Here, we present a simple wet chemical routine to synthesize heterostructures of PbTe/Te using Te nanowires as templates. A morphology evolution study for the formation of these heterostructures has been performed. On the basis of these control experiments, a pathway for the formation of these nanostructures is proposed. Reduction of a Pb precursor to Pb on Te nanowire templates followed by interdiffusion of Pb/Te leads to the formation of a thin shell of PbTe on the Te wires. Controlled dewetting of the thin shell leads to the formation of cube-shaped PbTe that is periodically arranged on the Te wires. Using control experiments, we show that different reactions parameters like rate of addition of the reducing agent, concentration of Pb precursor and thickness of initial Te nanowire play a critical role in controlling the spacing between the PbTe cubes on the Te wires. Using simple surface energy arguments, we propose a mechanism for the formation of the hybrid. The principles presented are general and can be exploited for the synthesis of other nanoscale heterostructures.

  3. Design and Characterisation of III-V Semiconductor Nanowire Lasers

    Science.gov (United States)

    Saxena, Dhruv

    -quantum well (MQW) gain regions are investigated. The TE01 mode, due to its polarisation and excellent overlap with the gain region, is predicted to lase in these nanowire heterostructures. Through gain/loss calculations, important design criteria, such as the optimal well thickness to minimise the threshold carrier density and the optimal number of QWs to minimise the threshold fluence are determined. Based on the design, MQW nanowire heterostructures containing eight uniform coaxial GaAs/AlGaAs MQWs are grown. Room-temperature lasing is demonstrated from individual nanowires at a threshold fluence that is two times lower compared to the bulk GaAs nanowire lasers. Lasing is also verified to be from TE01 mode by polarisation measurements. Lastly, a mode characterisation technique based on imaging the polarisation dependent far-field emission pattern of nanowire lasers is presented. To demonstrate this technique, InP nanowire lasers are used, because of their excellent structural characteristics. The InP nanowire lasers are designed to lase from different guided modes by varying the nanowire diameter. The experimentally obtained polarisation dependent far-field profiles match very well with numerical simulations and enable unambiguous identification of the lasing mode(s) in nanowire lasers. Overall, this thesis presents extensive modelling of nanowire lasers, which is supported by experimental results. The modelling will provide a useful reference for developing novel nanoscale lasers and improving the performance of current nanowire lasers.

  4. Semiconductor light sources fabricated by vapor phase epitaxial regrowth

    International Nuclear Information System (INIS)

    Powazinik, W.; Olshansky, R.; Meland, E.; Lauer, R.B.

    1986-01-01

    An extremely versatile technique for the fabrication of semiconductor light sources is described. The technique which is based on the halide vapor phase regrowth (VPR) of InP on channeled and selectively etched InGaAsP/InP double heterostructure material, results in a buried heterostructure (BH) index-guided VPR-BH diode laser structure which can be optimized for a number of different types of semiconductor light sources. The conditions and parameters associated with the halide VPR process are given, and the properties of the regrown InP are reported. The processing and characterization of high-frequency lasers with 18-GHz bandwidths and high-power lasers with cw single-spatial-mode powers of 60 mW are described. Additionally, the fabrication and characterization of superluminescent LEDs based on the this basic VPR-BH structure are described. These LEDs are capable of coupling more than 80 μW of optical power into a single-mode fiber at 100 mA, and can couple as much as 8 μW of optical power into a single-mode fiber at drive currents as low as 20 mA

  5. Spin-torque generation in topological insulator based heterostructures

    KAUST Repository

    Fischer, Mark H.; Vaezi, Abolhassan; Manchon, Aurelien; Kim, Eun-Ah

    2016-01-01

    Heterostructures utilizing topological insulators exhibit a remarkable spin-torque efficiency. However, the exact origin of the strong torque, in particular whether it stems from the spin-momentum locking of the topological surface states or rather

  6. Alignment effects in two-photon double ionization of H{sub 2} in femtosecond xuv laser pulses

    Energy Technology Data Exchange (ETDEWEB)

    Guan Xiaoxu; Bartschat, Klaus [Department of Physics and Astronomy, Drake University, Des Moines, Iowa 50311 (United States); Schneider, Barry I. [Office of Cyberinfrastructure, National Science Foundation, Arlington, Virgina 22230 (United States)

    2011-09-15

    Triple-differential cross sections for two-photon double ionization of the aligned hydrogen molecule at the equilibrium distance are presented for a central photon energy of 30 eV. The temporal response of the laser-driven molecule is investigated by solving the time-dependent Schroedinger equation in full dimensionality using two-center elliptical coordinates and a finite-element discrete-variable-representation approach. The molecular orientation is found to have a strong effect on the emission modes of the two correlated photoelectrons. This molecular effect is most noticeable when the molecular axis and the laser polarization vector are oriented parallel to each other. For intermediate cases between the parallel and perpendicular geometries, the dominant emission modes for two-electron ejection oscillate between those for the two extreme cases. The contributions from different ionization channels are also analyzed in detail. Depending on the emission direction of the reference electron, the interference contributions from the various channels can be constructive or destructive at small alignment angles, while they always contribute constructively to the triple-differential cross sections near the perpendicular geometry.

  7. Production Methods of Van der Waals Heterostructures Based on Transition Metal Dichalcogenides

    Directory of Open Access Journals (Sweden)

    Haimei Qi

    2018-01-01

    Full Text Available Two dimensional (2D materials have gained significant attention since the discovery of graphene in 2004. Layered transition metal dichalcogenides (TMDs have become the focus of 2D materials in recent years due to their wide range of chemical compositions and a variety of properties. These TMDs layers can be artificially integrated with other layered materials into a monolayer (lateral or a multilayer stack (vertical heterostructures. The resulting heterostructures provide new properties and applications beyond their component 2D atomic crystals and many exciting experimental results have been reported during the past few years. In this review, we present the various synthesis methods (mechanical exfoliation, physical vapor transport, chemical vapor deposition, and molecular beam epitaxy method on van der Waals heterostructures based on different TMDs as well as an outlook for future research.

  8. Film size-dependent voltage-modulated magnetism in multiferroic heterostructures

    Science.gov (United States)

    Hu, J.-M.; Shu, L.; Li, Z.; Gao, Y.; Shen, Y.; Lin, Y. H.; Chen, L. Q.; Nan, C. W.

    2014-01-01

    The electric-voltage-modulated magnetism in multiferroic heterostructures, also known as the converse magnetoelectric (ME) coupling, has drawn increasing research interest recently owing to its great potential applications in future low-power, high-speed electronic and/or spintronic devices, such as magnetic memory and computer logic. In this article, based on combined theoretical analysis and experimental demonstration, we investigate the film size dependence of such converse ME coupling in multiferroic magnetic/ferroelectric heterostructures, as well as exploring the interaction between two relating coupling mechanisms that are the interfacial strain and possibly the charge effects. We also briefly discuss some issues for the next step and describe new device prototypes that can be enabled by this technology. PMID:24421375

  9. Coherent Interlayer Tunneling and Negative Differential Resistance with High Current Density in Double Bilayer Graphene-WSe2 Heterostructures.

    Science.gov (United States)

    Burg, G William; Prasad, Nitin; Fallahazad, Babak; Valsaraj, Amithraj; Kim, Kyounghwan; Taniguchi, Takashi; Watanabe, Kenji; Wang, Qingxiao; Kim, Moon J; Register, Leonard F; Tutuc, Emanuel

    2017-06-14

    We demonstrate gate-tunable resonant tunneling and negative differential resistance between two rotationally aligned bilayer graphene sheets separated by bilayer WSe 2 . We observe large interlayer current densities of 2 and 2.5 μA/μm 2 and peak-to-valley ratios approaching 4 and 6 at room temperature and 1.5 K, respectively, values that are comparable to epitaxially grown resonant tunneling heterostructures. An excellent agreement between theoretical calculations using a Lorentzian spectral function for the two-dimensional (2D) quasiparticle states, and the experimental data indicates that the interlayer current stems primarily from energy and in-plane momentum conserving 2D-2D tunneling, with minimal contributions from inelastic or non-momentum-conserving tunneling. We demonstrate narrow tunneling resonances with intrinsic half-widths of 4 and 6 meV at 1.5 and 300 K, respectively.

  10. Interlayer electron-hole pair multiplication by hot carriers in atomic layer semiconductor heterostructures

    Science.gov (United States)

    Barati, Fatemeh; Grossnickle, Max; Su, Shanshan; Lake, Roger; Aji, Vivek; Gabor, Nathaniel

    Two-dimensional heterostructures composed of atomically thin transition metal dichalcogenides provide the opportunity to design novel devices for the study of electron-hole pair multiplication. We report on highly efficient multiplication of interlayer electron-hole pairs at the interface of a tungsten diselenide / molybdenum diselenide heterostructure. Electronic transport measurements of the interlayer current-voltage characteristics indicate that layer-indirect electron-hole pairs are generated by hot electron impact excitation. Our findings, which demonstrate an efficient energy relaxation pathway that competes with electron thermalization losses, make 2D semiconductor heterostructures viable for a new class of hot-carrier energy harvesting devices that exploit layer-indirect electron-hole excitations. SHINES, an Energy Frontier Research Center funded by the U.S. Department of Energy, Air Force Office of Scientific Research.

  11. Efficiencies of laser dyes for atomic vapor laser isotope separation

    International Nuclear Information System (INIS)

    Maeda, Mitsuo; Oki, Yuji; Uchiumi, Michihiro; Takao, Takayuki; Igarashi, Kaoru; Shimamoto, Kojiro.

    1995-01-01

    Efficiencies of 30 laser dyes for the atomic vapor laser isotope separation (AVLIS) are experimentally evaluated with a dye laser pumped by a frequency-doubled Nd:YAG laser. On the other hand, a simulation code is developed to describe the laser action of Rhodamine 6G, and the dependence of the laser efficiency on the pump wavelength is calculated. Following conclusions are obtained by these considerations:space: 1) Pyrromethene 567 showed 16% higher laser efficiency than Rhodamine 6G by 532 nm pumping, and Pyrromethene 556 has an ability to provide better efficiency by green light pumping with a Cu vapor laser; 2) Kiton red 620 and Rhodamine 640, whose efficiencies were almost the same as Rhodamine 6G by 532 nm pumping, will show better efficiencies by two-wavelength pumping with a Cu vapor laser. (author)

  12. Resonant Raman characterization of InAlGaN/GaN heterostructures

    International Nuclear Information System (INIS)

    Cros, A.; Cantarero, A.; Pelekanos, N.T.; Georgakilas, A.; Pomeroy, J.; Kuball, M.

    2006-01-01

    InAlGaN/GaN heterostructures and thin films with In composition ranging from 0.03 to 0.1 are characterized by means of Raman scattering excited at various energies in the ultra violet range, tuning the laser excitation energy through the band gap of In x Al y Ga 1-x-y N. It is shown that the addition of In to the Al y Ga 1-y N alloy diminishes considerably the vibration energy of the A 1 (LO) phonon mode. The phonon line is asymmetric on the low energy side, and the asymmetry increases with In content, while the main peak shifts to lower energies. A shift of the phonon energy has also been observed when the excitation energy is close to the absorption edge of the In x Al y Ga 1-x-y N layer. The nature of this shift is discussed in relation with intrinsic and extrinsic inhomogeneities in the quaternary alloy. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  13. Resonant Raman characterization of InAlGaN/GaN heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Cros, A.; Cantarero, A. [Institut de Ciencia dels Materials, Universitat de Valencia, 46071 Valencia (Spain); Pelekanos, N.T.; Georgakilas, A. [Microelectronics Research Group, FORTH/IESL and University of Crete, P.O. Box 1527, 71110 Heraklion, Crete (Greece); Pomeroy, J.; Kuball, M. [H. H. Wills Physics Laboratory, University of Bristol, Bristol BS8 1TL (United Kingdom)

    2006-06-15

    InAlGaN/GaN heterostructures and thin films with In composition ranging from 0.03 to 0.1 are characterized by means of Raman scattering excited at various energies in the ultra violet range, tuning the laser excitation energy through the band gap of In{sub x}Al{sub y}Ga{sub 1-x-y}N. It is shown that the addition of In to the Al{sub y}Ga{sub 1-y}N alloy diminishes considerably the vibration energy of the A{sub 1}(LO) phonon mode. The phonon line is asymmetric on the low energy side, and the asymmetry increases with In content, while the main peak shifts to lower energies. A shift of the phonon energy has also been observed when the excitation energy is close to the absorption edge of the In{sub x}Al{sub y}Ga{sub 1-x-y}N layer. The nature of this shift is discussed in relation with intrinsic and extrinsic inhomogeneities in the quaternary alloy. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  14. Future applications of heterostructures

    Science.gov (United States)

    König, Ulf

    1996-01-01

    In this review the status and future of heterostructure devices is discussed. The author concentrates on III/V and Si/SiGe. Performance and applications are folded to the data and expectations of the micro- and opto-electronic market and to the traditional Si-mainstream. New trends, i.e. the SIA-roadmap, are checked how heterodevices can fit in. Only the most attractive candidates for applications are considered, i.e. the heterobipolar-, the hetero field effect-transistors, the resonant tunnel diode and to a less extent, some optoelectronic devices. Considered figures of merit are frequencies, transconductance, noise at high and low frequencies, threshold voltage, power delay, threshold current and quantum efficiencies. It is pointed out how to optimize those by material and design. Extrapolations to the future potential of heterodevices are made, just taking the claimed scaling of lateral dimensions into consideration. Field of applications are presented, where heterodevices offer exclusive qualities, i.e. high frequency transmission and sensors, and new mixed systems. In the case of logic the trend goes to nanoscaled devices and ICs targeting nanoelectronics beyond traditional electronics. Heterostructure layers allow a vertical nanoscaling and thus give an additional degree of freedom for designing and optimation. It is an attractive challenge for scientists and engineers to solve the related technological problems like thin, low thermal budget oxides, like defect free buffer layers etc. Special attention is put on Si/SiGe, which is now on an upswing in electronics and photonics.

  15. Research on applications of rectangular beam in micro laser propulsion

    International Nuclear Information System (INIS)

    Jiao, L.; Cai, J.; Ma, H.H.; Li, G.X.; Li, L.; Shen, Z.W.; Tang, Z.P.

    2014-01-01

    Highlights: • Diode laser bar of 808 nm is introduced into the micro laser propulsion field. • Double base propellant (DBP) coating with BOPP substrate was obtained. • The combination of laser power and energy decides the propulsion performance. • The new rectangular beam prefers to produce higher impulse. - Abstract: Micro laser propulsion is a new technology with brilliant future. In order to reduce the thruster mass and volume further, laser bar is introduced into the micro laser propulsion field. A new kind of 220 × 20 μm rectangular beam of 808 nm was obtained by oval lens compressing the light of diode at fast axes and slow axes. The effect of laser power, energy and coating thickness of double base propellant on propulsion performance was studied. Propulsion performance of double base propellant under static and dynamic mode shows some different characters. Compared to round beam, the new beam prefers to produce higher impulse. Ablation efficiency of DBP shows better performance in short laser duration. The combination of power density and energy density decides the laser propulsion performance. The new rectangular beam is appropriate for millisecond micro-laser propulsion

  16. Self-induced laser line sweeping in double-clad Yb-doped fiber-ring lasers

    Czech Academy of Sciences Publication Activity Database

    Peterka, Pavel; Navrátil, P.; Maria, J.; Dussardier, B.; Slavík, Radan; Honzátko, Pavel; Kubeček, V.

    2012-01-01

    Roč. 9, č. 6 (2012), s. 445-450 ISSN 1612-2011 R&D Projects: GA MŠk(CZ) ME10119 Institutional support: RVO:67985882 Keywords : fiber laser * tunable laser * ytterbium Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering Impact factor: 7.714, year: 2012

  17. Strain and water effects on the electronic structure and chemical activity of in-plane graphene/silicene heterostructure

    Science.gov (United States)

    Kistanov, Andrey A.; Cai, Yongqing; Zhang, Yong-Wei; Dmitriev, Sergey V.; Zhou, Kun

    2017-03-01

    By using first-principles calculations, the electronic structure of planar and strained in-plane graphene/silicene heterostructure is studied. The heterostructure is found to be metallic in a strain range from  -7% (compression) to  +7% (tension). The effect of compressive/tensile strain on the chemical activity of the in-plane graphene/silicene heterostructure is examined by studying its interaction with the H2O molecule. It shows that compressive/tensile strain is able to increase the binding energy of H2O compared with the adsorption on a planar surface, and the charge transfer between the water molecule and the graphene/silicene sheet can be modulated by strain. Moreover, the presence of the boron-nitride (BN)-substrate significantly influences the chemical activity of the graphene/silicene heterostructure upon its interaction with the H2O molecule and may cause an increase/decrease of the charge transfer between the H2O molecule and the heterostructure. These findings provide insights into the modulation of electronic properties of the in-plane free-standing/substrate-supported graphene/silicene heterostructure, and render possible ways to control its electronic structure, carrier density and redox characteristics, which may be useful for its potential applications in nanoelectronics and gas sensors.

  18. Strain and water effects on the electronic structure and chemical activity of in-plane graphene/silicene heterostructure

    International Nuclear Information System (INIS)

    Kistanov, Andrey A; Zhou, Kun; Cai, Yongqing; Zhang, Yong-Wei; Dmitriev, Sergey V

    2017-01-01

    By using first-principles calculations, the electronic structure of planar and strained in-plane graphene/silicene heterostructure is studied. The heterostructure is found to be metallic in a strain range from  −7% (compression) to  +7% (tension). The effect of compressive/tensile strain on the chemical activity of the in-plane graphene/silicene heterostructure is examined by studying its interaction with the H 2 O molecule. It shows that compressive/tensile strain is able to increase the binding energy of H 2 O compared with the adsorption on a planar surface, and the charge transfer between the water molecule and the graphene/silicene sheet can be modulated by strain. Moreover, the presence of the boron-nitride (BN)-substrate significantly influences the chemical activity of the graphene/silicene heterostructure upon its interaction with the H 2 O molecule and may cause an increase/decrease of the charge transfer between the H 2 O molecule and the heterostructure. These findings provide insights into the modulation of electronic properties of the in-plane free-standing/substrate-supported graphene/silicene heterostructure, and render possible ways to control its electronic structure, carrier density and redox characteristics, which may be useful for its potential applications in nanoelectronics and gas sensors. (paper)

  19. Laser Ablation in situ (U-Th-Sm)/He and U-Pb Double-Dating of Apatite and Zircon: Techniques and Applications

    Science.gov (United States)

    McInnes, B.; Danišík, M.; Evans, N.; McDonald, B.; Becker, T.; Vermeesch, P.

    2015-12-01

    We present a new laser-based technique for rapid, quantitative and automated in situ microanalysis of U, Th, Sm, Pb and He for applications in geochronology, thermochronometry and geochemistry (Evans et al., 2015). This novel capability permits a detailed interrogation of the time-temperature history of rocks containing apatite, zircon and other accessory phases by providing both (U-Th-Sm)/He and U-Pb ages (+trace element analysis) on single crystals. In situ laser microanalysis offers several advantages over conventional bulk crystal methods in terms of safety, cost, productivity and spatial resolution. We developed and integrated a suite of analytical instruments including a 193 nm ArF excimer laser system (RESOlution M-50A-LR), a quadrupole ICP-MS (Agilent 7700s), an Alphachron helium mass spectrometry system and swappable flow-through and ultra-high vacuum analytical chambers. The analytical protocols include the following steps: mounting/polishing in PFA Teflon using methods similar to those adopted for fission track etching; laser He extraction and analysis using a 2 s ablation at 5 Hz and 2-3 J/cm2fluence; He pit volume measurement using atomic force microscopy, and U-Th-Sm-Pb (plus optional trace element) analysis using traditional laser ablation methods. The major analytical challenges for apatite include the low U, Th and He contents relative to zircon and the elevated common Pb content. On the other hand, apatite typically has less extreme and less complex zoning of parent isotopes (primarily U and Th). A freeware application has been developed for determining (U-Th-Sm)/He ages from the raw analytical data and Iolite software was used for U-Pb age and trace element determination. In situ double-dating has successfully replicated conventional U-Pb and (U-Th)/He age variations in xenocrystic zircon from the diamondiferous Ellendale lamproite pipe, Western Australia and increased zircon analytical throughput by a factor of 50 over conventional methods

  20. Sidewall gated double well quasi-one-dimensional resonant tunneling transistors

    Science.gov (United States)

    Kolagunta, V. R.; Janes, D. B.; Melloch, M. R.; Youtsey, C.

    1997-12-01

    We present gating characteristics of submicron vertical resonant tunneling transistors in double quantum well heterostructures. Current-voltage characteristics at room temperature and 77 K for devices with minimum feature widths of 0.9 and 0.7 μm are presented and discussed. The evolution of the I-V characteristics with increasing negative gate biases is related to the change in the lateral confinement, with a transition from a large area 2D to a quasi-1D. Even gating of multiple wells and lateral confinement effects observable at 77 K make these devices ideally suited for applications in multi-valued logic systems and low-dimensional structures.