Homoepitaxial graphene tunnel barriers for spin transport

Science.gov (United States)

Friedman, Adam L.; van't Erve, Olaf M. J.; Robinson, Jeremy T.; Whitener, Keith E.; Jonker, Berend T.

2016-05-01

Tunnel barriers are key elements for both charge-and spin-based electronics, offering devices with reduced power consumption and new paradigms for information processing. Such devices require mating dissimilar materials, raising issues of heteroepitaxy, interface stability, and electronic states that severely complicate fabrication and compromise performance. Graphene is the perfect tunnel barrier. It is an insulator out-of-plane, possesses a defect-free, linear habit, and is impervious to interdiffusion. Nonetheless, true tunneling between two stacked graphene layers is not possible in environmental conditions usable for electronics applications. However, two stacked graphene layers can be decoupled using chemical functionalization. Here, we demonstrate that hydrogenation or fluorination of graphene can be used to create a tunnel barrier. We demonstrate successful tunneling by measuring non-linear IV curves and a weakly temperature dependent zero-bias resistance. We demonstrate lateral transport of spin currents in non-local spin-valve structures, and determine spin lifetimes with the non-local Hanle effect. We compare the results for hydrogenated and fluorinated tunnel and we discuss the possibility that ferromagnetic moments in the hydrogenated graphene tunnel barrier affect the spin transport of our devices.

Spin-polarized inelastic tunneling through insulating barriers.

Science.gov (United States)

Lu, Y; Tran, M; Jaffrès, H; Seneor, P; Deranlot, C; Petroff, F; George, J-M; Lépine, B; Ababou, S; Jézéquel, G

2009-05-01

Spin-conserving hopping transport through chains of localized states has been evidenced by taking benefit of the high degree of spin-polarization of CoFeB-MgO-CoFeB magnetic tunnel junctions. In particular, our data show that relatively thick MgO barriers doped with boron favor the activation of spin-conserving inelastic channels through a chain of three localized states and leading to reduced magnetoresistance effects. We propose an extension of the Glazman-Matveev theory to the case of ferromagnetic reservoirs to account for spin-polarized inelastic tunneling through nonmagnetic localized states embedded in an insulating barrier.

Spin transport through electric field modulated graphene periodic ferromagnetic barriers

International Nuclear Information System (INIS)

Sattari, F.; Faizabadi, E.

2014-01-01

Using the transfer matrix method, the spin transmission coefficient and the spin conductivity are studied theoretically through the monolayer and bilayer graphene periodic ferromagnetic barriers modulated by a homogeneous electric field. The spin conductivity of the systems has an oscillatory behavior with respect to the external electric field which depends on the spin state of electron. In addition, the oscillation amplitude of the spin conductivity and spin polarization increase by increasing the number of barriers, but for a monolayer system with number of barriers greater than thirty, also for a bilayer system with the number of barriers greater than four, the oscillation amplitude does not change significantly. Our probes show that for bilayer system unlike monolayer structure the highest value of spin polarization achieved can be 1 or (−1). So, for designing spintronic devices, bilayer graphene is more efficient

Homoepitaxial graphene tunnel barriers for spin transport (Presentation Recording)

Science.gov (United States)

Friedman, Adam L.

2015-09-01

Tunnel barriers are key elements for both charge-and spin-based electronics, offering devices with reduced power consumption and new paradigms for information processing. Such devices require mating dissimilar materials, raising issues of heteroepitaxy, interface stability, and electronic states that severely complicate fabrication and compromise performance. Graphene is the perfect tunnel barrier. It is an insulator out-of-plane, possesses a defect-free, linear habit, and is impervious to interdiffusion. Nonetheless, true tunneling between two stacked graphene layers is not possible in environmental conditions (magnetic field, temperature, etc.) usable for electronics applications. However, two stacked graphene layers can be decoupled using chemical functionalization. Here, we demonstrate homoepitaxial tunnel barrier devices in which graphene serves as both the tunnel barrier and the high mobility transport channel. Beginning with multilayer graphene, we fluorinate or hydrogenate the top layer to decouple it from the bottom layer, so that it serves as a single monolayer tunnel barrier for both charge and spin injection into the lower graphene transport channel. We demonstrate successful tunneling by measuring non-linear IV curves, and a weakly temperature dependent zero bias resistance. We perform lateral transport of spin currents in non-local spin-valve structures and determine spin lifetimes with the non-local Hanle effect to be commensurate with previous studies (~200 ps). However, we also demonstrate the highest spin polarization efficiencies (~45%) yet measured in graphene-based spin devices [1]. [1] A.L. Friedman, et al., Homoepitaxial tunnel barriers with functionalized graphene-on-graphene for charge and spin transport, Nat. Comm. 5, 3161 (2014).

The critical role of the barrier thickness in spin filter tunneling

International Nuclear Information System (INIS)

Miller, Casey W.

2009-01-01

Spin filter tunneling is considered in the low bias limit as functions of the temperature dependent barrier parameters. We demonstrate the generation of spin polarized tunneling currents in relation to the magnetic order parameter, and discuss how an interfacially suppressed order parameter leads to a temperature dependent tunneling current asymmetry. Analyzing the full parameter space reveals that the often overlooked barrier thickness plays a critical role in spin filter tunneling. With all else fixed, thicker barriers yield higher spin polarization, and allow a given polarization to be achieved at higher temperatures. This insight may open the door for new materials to serve as spin filter barriers.

The Plastic Potential, Double-slip, Double-spin and Viscoplasticity

Science.gov (United States)

Harris, David

2010-05-01

In this paper we describe two classical models for rate-independent behaviour of granular materials, namely the plastic potential and the double shearing model, emphasising their ill-posedness. We then describe a model, called the doubleslip and double-spin model which generalises the plastic potential model and is closely related to the double shearing model. This new model eliminates the causes of the ill-posedness in the classical models and provides a suitable basis for the analysis of the deformation and flow of granular materials in the rate-independent regime. There has been considerable recent interest in the intermediate regime between densely-packed, rate-independent, quasistatic flow and the rate-dependent dilute gaseous regime. In this intermediate regime the material also exhibits a degree of ratedependence. The natural extension of a rate-independent plasticity model to incorporate rate-dependent material behaviour is by way of viscoplasticity. The archetypal example here is the Bingham material which generalises a von Mises type plasticity model and introduces a viscosity parameter into the model. We propose an extension of the double-slip and double-spin model to incorporate viscosity, thereby extending the range of the model to incorporate rate-dependent behaviour. The new model is then applied to a simplified problem of pipe flow.

Asymmetric voltage behavior of the tunnel magnetoresistance in double barrier magnetic tunnel junctions

KAUST Repository

Useinov, Arthur

2012-06-01

In this paper, we study the value of the tunnel magnetoresistance (TMR) as a function of the applied voltage in double barrier magnetic tunnel junctions (DMTJs) with the left and right ferromagnetic (FM) layers being pinned and numerically estimate the possible difference of the TMR curves for negative and positive voltages in the homojunctions (equal barriers and electrodes). DMTJs are modeled as two single barrier junctions connected in series with consecutive tunneling (CST). We investigated the asymmetric voltage behavior of the TMR for the CST in the range of a general theoretical model. Significant asymmetries of the experimental curves, which arise due to different annealing regimes, are mostly explained by different heights of the tunnel barriers and asymmetries of spin polarizations in magnetic layers. © (2012) Trans Tech Publications.

Asymmetric voltage behavior of the tunnel magnetoresistance in double barrier magnetic tunnel junctions

KAUST Repository

Useinov, Arthur; Gooneratne, Chinthaka Pasan; Kosel, Jü rgen

2012-01-01

In this paper, we study the value of the tunnel magnetoresistance (TMR) as a function of the applied voltage in double barrier magnetic tunnel junctions (DMTJs) with the left and right ferromagnetic (FM) layers being pinned and numerically estimate the possible difference of the TMR curves for negative and positive voltages in the homojunctions (equal barriers and electrodes). DMTJs are modeled as two single barrier junctions connected in series with consecutive tunneling (CST). We investigated the asymmetric voltage behavior of the TMR for the CST in the range of a general theoretical model. Significant asymmetries of the experimental curves, which arise due to different annealing regimes, are mostly explained by different heights of the tunnel barriers and asymmetries of spin polarizations in magnetic layers. © (2012) Trans Tech Publications.

Controlling the spin-torque efficiency with ferroelectric barriers

KAUST Repository

Useinov, A.; Chshiev, M.; Manchon, Aurelien

2015-01-01

Nonequilibrium spin-dependent transport in magnetic tunnel junctions comprising a ferroelectric barrier is theoretically investigated. The exact solutions of the free electron Schrödinger equation for electron tunneling in the presence of interfacial screening are obtained by combining Bessel and Airy functions. We demonstrate that the spin transfer torque efficiency, and more generally the bias dependence of tunneling magneto- and electroresistance, can be controlled by switching the ferroelectric polarization of the barrier. In particular, the critical voltage at which the in-plane torque changes sign can be strongly enhanced or reduced depending on the direction of the ferroelectric polarization of the barrier. This effect provides a supplementary way to electrically control the current-driven dynamic states of the magnetization and related magnetic noise in spin transfer devices.

Controlling the spin-torque efficiency with ferroelectric barriers

KAUST Repository

Useinov, A.

2015-02-11

Nonequilibrium spin-dependent transport in magnetic tunnel junctions comprising a ferroelectric barrier is theoretically investigated. The exact solutions of the free electron Schrödinger equation for electron tunneling in the presence of interfacial screening are obtained by combining Bessel and Airy functions. We demonstrate that the spin transfer torque efficiency, and more generally the bias dependence of tunneling magneto- and electroresistance, can be controlled by switching the ferroelectric polarization of the barrier. In particular, the critical voltage at which the in-plane torque changes sign can be strongly enhanced or reduced depending on the direction of the ferroelectric polarization of the barrier. This effect provides a supplementary way to electrically control the current-driven dynamic states of the magnetization and related magnetic noise in spin transfer devices.

Double perovskites with strong spin-orbit coupling

Science.gov (United States)

Cook, Ashley M.

We first present theoretical analysis of powder inelastic neutron scattering experiments in Ba2FeReO6 performed by our experimental collaborators. Ba2FeReO6, a member of the double perovskite family of materials, exhibits half-metallic behavior and high Curie temperatures Tc, making it of interest for spintronics applications. To interpret the experimental data, we develop a local moment model, which incorporates the interaction of Fe spins with spin-orbital locked magnetic moments on Re, and show that it captures the experimental observations. We then develop a tight-binding model of the double perovskite Ba 2FeReO6, a room temperature ferrimagnet with correlated and spin-orbit coupled Re t2g electrons moving in the background of Fe moments stabilized by Hund's coupling. We show that for such 3d/5d double perovskites, strong correlations on the 5d-element (Re) are essential in driving a half-metallic ground state. Incorporating both strong spin-orbit coupling and the Hubbard repulsion on Re leads to a band structure consistent with ab initio calculations. The uncovered interplay of strong correlations and spin-orbit coupling lends partial support to our previous work, which used a local moment description to capture the spin wave dispersion found in neutron scattering measurements. We then adapt this tight-binding model to study {111}-grown bilayers of half-metallic double perovskites such as Sr2FeMoO6. The combination of spin-orbit coupling, inter-orbital hybridization and symmetry-allowed trigonal distortion leads to a rich phase diagram with tunable ferromagnetic order, topological C= +/-1, +/-2 Chern bands, and a C = +/-2 quantum anomalous Hall insulator regime. We have also performed theoretical analysis of inelastic neutron scattering (INS) experiments to investigate the magnetic excitations in the weakly distorted face-centered-cubic (fcc) iridate double perovskites La2ZnIrO 6 and La2MgIrO6. Models with dominant Kitaev exchange seem to most naturally

Velocity barrier-controlled of spin-valley polarized transport in monolayer WSe2 junction

Science.gov (United States)

Qiu, Xuejun; Lv, Qiang; Cao, Zhenzhou

2018-05-01

In this work, we have theoretically investigated the influence of velocity barrier on the spin-valley polarized transport in monolayer (ML) WSe2 junction with a large spin-orbit coupling (SOC). Both the spin-valley resolved transmission probabilities and conductance are strong dependent on the velocity barrier, as the velocity barrier decreases to 0.06, a spin-valley polarization of exceeding 90% is observed, which is distinct from the ML MoS2 owing to incommensurable SOC. In addition, the spin-valley polarization is further increased above 95% in a ML WSe2 superlattice, in particular, it's found many extraordinary velocity barrier-dependent transport gaps for multiple barrier due to evanescent tunneling. Our results may open an avenue for the velocity barrier-controlled high-efficiency spin and valley polarizations in ML WSe2-based electronic devices.

Spin-polarization and spin-dependent logic gates in a double quantum ring based on Rashba spin-orbit effect: Non-equilibrium Green's function approach

International Nuclear Information System (INIS)

Eslami, Leila; Esmaeilzadeh, Mahdi

2014-01-01

Spin-dependent electron transport in an open double quantum ring, when each ring is made up of four quantum dots and threaded by a magnetic flux, is studied. Two independent and tunable gate voltages are applied to induce Rashba spin-orbit effect in the quantum rings. Using non-equilibrium Green's function formalism, we study the effects of electron-electron interaction on spin-dependent electron transport and show that although the electron-electron interaction induces an energy gap, it has no considerable effect when the bias voltage is sufficiently high. We also show that the double quantum ring can operate as a spin-filter for both spin up and spin down electrons. The spin-polarization of transmitted electrons can be tuned from −1 (pure spin-down current) to +1 (pure spin-up current) by changing the magnetic flux and/or the gates voltage. Also, the double quantum ring can act as AND and NOR gates when the system parameters such as Rashba coefficient are properly adjusted

Electron-spin polarization in tunnel junctions with ferromagnetic EuS barriers

International Nuclear Information System (INIS)

Hao, X.; Moodera, J.S.; Meservey, R.

1989-01-01

The authors report here spin-polarized tunneling experiments using non-ferromagnetic electrodes and ferromagnetic EuS barriers. Because of the conduction band in EuS splits into spin-up and spin-down subbands when the temperature is below 16.7 K, the Curie temperature of EuS, the tunnel barrier for electrons with different spin directions is different, therefore giving rise to tunnel current polarization. The spin-filter effect, as it may be called, was observed earlier, directly or indirectly, by several groups: Esaki et al. made a tunneling study on junctions having EuS and EuSe barriers; Thompson et al. studied Schottky barrier tunneling between In and doped EuS; Muller et al. and Kisker et al. performed electron field emission experiments on EuS-coated tungsten tips. The field emission experiments gave a maximum polarization of (89 + 7)% for the emitted electrons. Although the previous tunneling studies did not directly show electron polarization, their results were explained by the same spin- filter effect. This work uses the spin-polarized tunneling technique to show directly that tunnel current is indeed polarized and polarization can be as high as 85%

Large magnetocurrents in double-barrier tunneling transistors

International Nuclear Information System (INIS)

Lee, J.H.; Jun, K.-I.; Shin, K.-H.; Park, S.Y.; Hong, J.K.; Rhie, K.; Lee, B.C.

2005-01-01

Magnetic tunneling transistors (MTT) with double tunneling barriers are fabricated. The structure of the transistor is AFM/FM/I/FM/I/FM/AFM, and ferromagnetic layers serve as the emitter, base and collector. This double-barrier tunneling transistor (DBTT) has an advantage of controlling the potential between the base and collector, compared to the Schottky-barrier-based base and collector of MTT. We found that the collector current density of DBTT is at least 10 3 times larger than that of conventional MTT, since tunneling through AlO x barrier provides much larger current density than that through Schottky barrier

Contact induced spin relaxation in graphene spin valves with Al2O3 and MgO tunnel barriers

Directory of Open Access Journals (Sweden)

Walid Amamou

2016-03-01

Full Text Available We investigate spin relaxation in graphene by systematically comparing the roles of spin absorption, other contact-induced effects (e.g., fringe fields, and bulk spin relaxation for graphene spin valves with MgO barriers, Al2O3 barriers, and transparent contacts. We obtain effective spin lifetimes by fitting the Hanle spin precession data with two models that include or exclude the effect of spin absorption. Results indicate that additional contact-induced spin relaxation other than spin absorption dominates the contact effect. For tunneling contacts, we find reasonable agreement between the two models with median discrepancy of ∼20% for MgO and ∼10% for Al2O3.

Universal set of quantum gates for double-dot exchange-only spin qubits with intradot coupling

International Nuclear Information System (INIS)

Michielis, M De; Ferraro, E; Fanciulli, M; Prati, E

2015-01-01

We present a universal set of quantum gate operations based on exchange-only spin qubits in a double quantum dot, where each qubit is obtained by three electrons in the (2,1) filling. Gate operations are addressed by modulating electrostatically the tunneling barrier and the energy offset between the two dots, singly and doubly occupied respectively. We propose explicit gate sequences of single qubit operations for arbitrary rotations, and the two-qubit controlled NOT gate, to complete the universal set. The unswitchable interaction between the two electrons of the doubly occupied quantum dot is taken into account. Short gate times are obtained by employing spin density functional theory simulations. (paper)

Double-spin-flip resonance of rhodium nuclei at positive and negative spin temperatures

DEFF Research Database (Denmark)

Tuoriniemi, J.T.; Knuuttila, T.A.; Lefmann, K.

2000-01-01

Sensitive SQUID-NMR measurements were used to study the mutual interactions in the highly polarized nuclear-spin system of rhodium metal. The dipolar coupling gives rise to a weak double-spin-flip resonance. The observed frequency shifts allow deducing separately the dipolarlike contribution...

Resonant tunneling of spin-wave packets via quantized states in potential wells.

Science.gov (United States)

Hansen, Ulf-Hendrik; Gatzen, Marius; Demidov, Vladislav E; Demokritov, Sergej O

2007-09-21

We have studied the tunneling of spin-wave pulses through a system of two closely situated potential barriers. The barriers represent two areas of inhomogeneity of the static magnetic field, where the existence of spin waves is forbidden. We show that for certain values of the spin-wave frequency corresponding to the quantized spin-wave states existing in the well formed between the barriers, the tunneling has a resonant character. As a result, transmission of spin-wave packets through the double-barrier structure is much more efficient than the sequent tunneling through two single barriers.

Spin asymmetry calculations of the TMR-V curves in single and double-barrier magnetic tunnel junctions

KAUST Repository

Useinov, Arthur; Kosel, Jü rgen

2011-01-01

in the single as well as double barrier magnetic tunnel junctions (SMTJ & DMTJ, which are constructed from CoFeB/MgO interfaces) and numerically estimate the possible difference of the TMR-V a curves for negative and positive voltages in the homojunctions

Resonant tunneling via spin-polarized barrier states in a magnetic tunnel junction

NARCIS (Netherlands)

Jansen, R.; Lodder, J.C.

2000-01-01

Resonant tunneling through states in the barrier of a magnetic tunnel junction has been analyzed theoretically for the case of a spin-polarized density of barrier states. It is shown that for highly spin-polarized barrier states, the magnetoresistance due to resonant tunneling is enhanced compared

Spin-dependent scattering by a potential barrier on a nanotube

International Nuclear Information System (INIS)

Abranyos, Yonatan; Gumbs, Godfrey; Fekete, Paula

2010-01-01

The electron spin effects on the surface of a nanotube have been considered through the spin-orbit interaction (SOI), arising from the electron confinement on the surface of the nanotube. This is of the same nature as the Rashba-Bychkov SOI at a semiconductor heterojunction. We estimate the effect of disorder within a potential barrier on the transmission probability. Using a continuum model, we obtain analytic expressions for the spin-split energy bands for electrons on the surface of nanotubes in the presence of SOI. First we calculate analytically the amplitudes of scattering from a potential barrier located around the axis of the nanotube into spin-dependent states. The effect of disorder on the scattering process is included phenomenologically and induces a reduction in the transition probability. We analyze the relative role of SOI and disorder in the transmission probability which depends on the angular and linear momentum of the incoming particle, and its spin orientation. Finally we demonstrate that in the presence of disorder, perfect transmission may not be achieved for finite barrier heights.

Spin Transfer Torque in Graphene

Science.gov (United States)

Lin, Chia-Ching; Chen, Zhihong

2014-03-01

Graphene is an idea channel material for spin transport due to its long spin diffusion length. To develop graphene based spin logic, it is important to demonstrate spin transfer torque in graphene. Here, we report the experimental measurement of spin transfer torque in graphene nonlocal spin valve devices. Assisted by a small external in-plane magnetic field, the magnetization reversal of the receiving magnet is induced by pure spin diffusion currents from the injector magnet. The magnetization switching is reversible between parallel and antiparallel configurations by controlling the polarity of the applied charged currents. Current induced heating and Oersted field from the nonlocal charge flow have also been excluded in this study. Next, we further enhance the spin angular momentum absorption at the interface of the receiving magnet and graphene channel by removing the tunneling barrier in the receiving magnet. The device with a tunneling barrier only at the injector magnet shows a comparable nonlocal spin valve signal but lower electrical noise. Moreover, in the same preset condition, the critical charge current density for spin torque in the single tunneling barrier device shows a substantial reduction if compared to the double tunneling barrier device.

Quadratic integrand double-hybrid made spin-component-scaled

Energy Technology Data Exchange (ETDEWEB)

Brémond, Éric, E-mail: eric.bremond@iit.it; Savarese, Marika [CompuNet, Istituto Italiano di Tecnologia, via Morego 30, I-16163 Genoa (Italy); Sancho-García, Juan C.; Pérez-Jiménez, Ángel J. [Departamento de Química Física, Universidad de Alicante, E-03080 Alicante (Spain); Adamo, Carlo [CompuNet, Istituto Italiano di Tecnologia, via Morego 30, I-16163 Genoa (Italy); Chimie ParisTech, PSL Research University, CNRS, Institut de Recherche de Chimie Paris IRCP, F-75005 Paris (France); Institut Universitaire de France, 103 Boulevard Saint Michel, F-75005 Paris (France)

2016-03-28

We propose two analytical expressions aiming to rationalize the spin-component-scaled (SCS) and spin-opposite-scaled (SOS) schemes for double-hybrid exchange-correlation density-functionals. Their performances are extensively tested within the framework of the nonempirical quadratic integrand double-hybrid (QIDH) model on energetic properties included into the very large GMTKN30 benchmark database, and on structural properties of semirigid medium-sized organic compounds. The SOS variant is revealed as a less computationally demanding alternative to reach the accuracy of the original QIDH model without losing any theoretical background.

Pumped double quantum dot with spin-orbit coupling

Directory of Open Access Journals (Sweden)

Sherman Eugene

2011-01-01

Full Text Available Abstract We study driven by an external electric field quantum orbital and spin dynamics of electron in a one-dimensional double quantum dot with spin-orbit coupling. Two types of external perturbation are considered: a periodic field at the Zeeman frequency and a single half-period pulse. Spin-orbit coupling leads to a nontrivial evolution in the spin and orbital channels and to a strongly spin- dependent probability density distribution. Both the interdot tunneling and the driven motion contribute into the spin evolution. These results can be important for the design of the spin manipulation schemes in semiconductor nanostructures. PACS numbers: 73.63.Kv,72.25.Dc,72.25.Pn

Spin and tunneling dynamics in an asymmetrical double quantum dot with spin-orbit coupling: Selective spin transport device

Science.gov (United States)

Singh, Madhav K.; Jha, Pradeep K.; Bhattacherjee, Aranya B.

2017-09-01

In this article, we study the spin and tunneling dynamics as a function of magnetic field in a one-dimensional GaAs double quantum dot with both the Dresselhaus and Rashba spin-orbit coupling. In particular, we consider different spatial widths for the spin-up and spin-down electronic states. We find that the spin dynamics is a superposition of slow as well as fast Rabi oscillations. It is found that the Rashba interaction strength as well as the external magnetic field strongly modifies the slow Rabi oscillations which is particularly useful for implementing solid state selective spin transport device.

Piezotronically modified double Schottky barriers in ZnO varistors.

Science.gov (United States)

Raidl, Nadine; Supancic, Peter; Danzer, Robert; Hofstätter, Michael

2015-03-25

Double Schottky barriers in ZnO are modified piezotronically by the application of mechanical stresses. New effects such as the enhancement of the potential barrier height and the increase or decrease of the natural barrier asymmetry are presented. Also, an extended model for the piezotronic modification of double Schottky barriers is given. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Conductance of graphene-based double-barrier nanostructures

Energy Technology Data Exchange (ETDEWEB)

Setare, M R [Department of Campus of Bijar, University of Kurdistan, Bijar (Iran, Islamic Republic of); Jahani, D, E-mail: Rezakord@ipm.co, E-mail: Dariush110@gmail.co [Department of Physics, Razi University, Kermanshah (Iran, Islamic Republic of)

2010-12-22

The effect of a mass gap on the conductance of graphene double-barrier heterojunctions is studied. By obtaining the 2D expression for the electronic transport of the low energy excitations of pure graphene through double-barrier systems, it is found that the conductivity of these structures does not depend on the type of charge carriers in the zones of the electric field. However, a finite induced gap in the graphene spectrum makes conductivity dependent on the energy band index. We also discuss a few controversies concerning double-barrier systems stemming from an improper choice of the scattering angle. Then it is observed that, for some special values of the incident energy and potential's height, graphene junctions behave like left-handed materials, resulting in a maximum value for the conductivity.

Conductance of graphene-based double-barrier nanostructures

International Nuclear Information System (INIS)

Setare, M R; Jahani, D

2010-01-01

The effect of a mass gap on the conductance of graphene double-barrier heterojunctions is studied. By obtaining the 2D expression for the electronic transport of the low energy excitations of pure graphene through double-barrier systems, it is found that the conductivity of these structures does not depend on the type of charge carriers in the zones of the electric field. However, a finite induced gap in the graphene spectrum makes conductivity dependent on the energy band index. We also discuss a few controversies concerning double-barrier systems stemming from an improper choice of the scattering angle. Then it is observed that, for some special values of the incident energy and potential's height, graphene junctions behave like left-handed materials, resulting in a maximum value for the conductivity.

Conductance of graphene-based double-barrier nanostructures.

Science.gov (United States)

Setare, M R; Jahani, D

2010-12-22

The effect of a mass gap on the conductance of graphene double-barrier heterojunctions is studied. By obtaining the 2D expression for the electronic transport of the low energy excitations of pure graphene through double-barrier systems, it is found that the conductivity of these structures does not depend on the type of charge carriers in the zones of the electric field. However, a finite induced gap in the graphene spectrum makes conductivity dependent on the energy band index. We also discuss a few controversies concerning double-barrier systems stemming from an improper choice of the scattering angle. Then it is observed that, for some special values of the incident energy and potential's height, graphene junctions behave like left-handed materials, resulting in a maximum value for the conductivity.

Spin-orbit coupling and electric-dipole spin resonance in a nanowire double quantum dot.

Science.gov (United States)

Liu, Zhi-Hai; Li, Rui; Hu, Xuedong; You, J Q

2018-02-02

We study the electric-dipole transitions for a single electron in a double quantum dot located in a semiconductor nanowire. Enabled by spin-orbit coupling (SOC), electric-dipole spin resonance (EDSR) for such an electron can be generated via two mechanisms: the SOC-induced intradot pseudospin states mixing and the interdot spin-flipped tunneling. The EDSR frequency and strength are determined by these mechanisms together. For both mechanisms the electric-dipole transition rates are strongly dependent on the external magnetic field. Their competition can be revealed by increasing the magnetic field and/or the interdot distance for the double dot. To clarify whether the strong SOC significantly impact the electron state coherence, we also calculate relaxations from excited levels via phonon emission. We show that spin-flip relaxations can be effectively suppressed by the phonon bottleneck effect even at relatively low magnetic fields because of the very large g-factor of strong SOC materials such as InSb.

Electron spin resonance and spin-valley physics in a silicon double quantum dot.

Science.gov (United States)

Hao, Xiaojie; Ruskov, Rusko; Xiao, Ming; Tahan, Charles; Jiang, HongWen

2014-05-14

Silicon quantum dots are a leading approach for solid-state quantum bits. However, developing this technology is complicated by the multi-valley nature of silicon. Here we observe transport of individual electrons in a silicon CMOS-based double quantum dot under electron spin resonance. An anticrossing of the driven dot energy levels is observed when the Zeeman and valley splittings coincide. A detected anticrossing splitting of 60 MHz is interpreted as a direct measure of spin and valley mixing, facilitated by spin-orbit interaction in the presence of non-ideal interfaces. A lower bound of spin dephasing time of 63 ns is extracted. We also describe a possible experimental evidence of an unconventional spin-valley blockade, despite the assumption of non-ideal interfaces. This understanding of silicon spin-valley physics should enable better control and read-out techniques for the spin qubits in an all CMOS silicon approach.

Double-quantum homonuclear correlations of spin I=5/2 nuclei.

Science.gov (United States)

Iuga, Dinu

2011-02-01

The challenges associated with acquiring double-quantum homonuclear Nuclear Magnetic Resonance correlation spectra of half-integer quadrupolar nuclei are described. In these experiments the radio-frequency irradiation amplitude is necessarily weak in order to selectively excite the central transition. In this limit only one out of the 25 double-quantum coherences possible for two coupled spin I=5/2 nuclei is excited. An investigation of all the 25 two spins double quantum transitions reveals interesting effects such as a compensation of the first-order quadrupolar interaction between the two single quantum transitions involved in the double quantum coherence. In this paper a full numerical study of a hypothetical two spin I=5/2 system is used to show what happens when the RF amplitude during recoupling is increased. In principle this is advantageous, since the required double quantum coherence should build up faster, but in practice it also induces adiabatic passage transfer of population and coherence which impedes any build up. Finally an optimized rotary resonance recoupling (oR(3)) sequence is introduced in order to decrease these transfers. This sequence consists of a spin locking irradiation whose amplitude is reduced four times during one rotor period, and allows higher RF powers to be used during recoupling. The sequence is used to measure (27)Al DQ dipolar correlation spectra of Y(3)Al(5)O(12) (YAG) and gamma alumina (γAl(2)O(3)). The results prove that aluminium vacancies in gamma alumina mainly occur in the tetrahedral sites. Copyright © 2010 Elsevier Inc. All rights reserved.

Phonon tunneling through a double barrier system

International Nuclear Information System (INIS)

Villegas, Diosdado; León-Pérez, Fernando de; Pérez-Álvarez, R.; Arriaga, J.

2015-01-01

The tunneling of optical and acoustic phonons at normal incidence on a double-barrier is studied in this paper. Transmission coefficients and resonance conditions are derived theoretically under the assumption that the long-wavelength approximation is valid. It is shown that the behavior of the transmission coefficients for the symmetric double barrier has a Lorentzian form close to resonant frequencies and that Breit–Wigner's formula have a general validity in one-dimensional phonon tunneling. Authors also study the so-called generalized Hartman effect in the tunneling of long-wavelength phonons and show that this effect is a numerical artifact resulting from taking the opaque limit before exploring the variation with a finite barrier width. This study could be useful for the design of acoustic devices

Phonon tunneling through a double barrier system

Energy Technology Data Exchange (ETDEWEB)

Villegas, Diosdado [Departamento de Física, Universidad Central “Marta Abreu” de Las Villas, CP 54830, Santa Clara, Villa Clara (Cuba); Instituto de Física, Universidad Autónoma de Puebla, 18 Sur y San Claudio, Edif. 110A, Ciudad Universitaria, 72570 Puebla (Mexico); León-Pérez, Fernando de [Centro Universitario de la Defensa de Zaragoza, Ctra. de Huesca s/n, E-50090 Zaragoza (Spain); Pérez-Álvarez, R. [Universidad Autónoma del Estado de Morelos, Av. Universidad 1001, CP 62209 Cuernavaca (Mexico); Arriaga, J., E-mail: arriaga@ifuap.buap.mx [Instituto de Física, Universidad Autónoma de Puebla, 18 Sur y San Claudio, Edif. 110A, Ciudad Universitaria, 72570 Puebla (Mexico)

2015-04-15

The tunneling of optical and acoustic phonons at normal incidence on a double-barrier is studied in this paper. Transmission coefficients and resonance conditions are derived theoretically under the assumption that the long-wavelength approximation is valid. It is shown that the behavior of the transmission coefficients for the symmetric double barrier has a Lorentzian form close to resonant frequencies and that Breit–Wigner's formula have a general validity in one-dimensional phonon tunneling. Authors also study the so-called generalized Hartman effect in the tunneling of long-wavelength phonons and show that this effect is a numerical artifact resulting from taking the opaque limit before exploring the variation with a finite barrier width. This study could be useful for the design of acoustic devices.

Vanishing current hysteresis under competing nuclear spin pumping processes in a quadruplet spin-blockaded double quantum dot

Energy Technology Data Exchange (ETDEWEB)

Amaha, S., E-mail: s-amaha@riken.jp [Quantum Spin Information Project, Japan Science and Technology Agency, ICORP, 3-1, Morinosato Wakamiya, Atsugi-shi, Kanagawa 243-0198 (Japan); Quantum Functional System Research Group, RIKEN Center for Emergent Matter Science, RIKEN, 3-1 Wako-shi, Saitama 351-0198 (Japan); Hatano, T. [Quantum Spin Information Project, Japan Science and Technology Agency, ICORP, 3-1, Morinosato Wakamiya, Atsugi-shi, Kanagawa 243-0198 (Japan); Department of Physics, Tohoku University, Sendai-shi, Miyagi 980-8578 (Japan); Tarucha, S. [Quantum Spin Information Project, Japan Science and Technology Agency, ICORP, 3-1, Morinosato Wakamiya, Atsugi-shi, Kanagawa 243-0198 (Japan); Quantum Functional System Research Group, RIKEN Center for Emergent Matter Science, RIKEN, 3-1 Wako-shi, Saitama 351-0198 (Japan); Department of Applied Physics, School of Engineering, University of Tokyo, 7-3-1, Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan); Gupta, J. A.; Austing, D. G. [National Research Council of Canada, M50, Montreal Road, Ottawa, Ontario K1A 0R6 (Canada)

2015-04-27

We investigate nuclear spin pumping with five-electron quadruplet spin states in a spin-blockaded weakly coupled vertical double quantum dot device. Two types of hysteretic steps in the leakage current are observed on sweeping the magnetic field and are associated with bidirectional polarization of nuclear spin. Properties of the steps are understood in terms of bias-voltage-dependent conditions for the mixing of quadruplet and doublet spin states by the hyperfine interaction. The hysteretic steps vanish when up- and down-nuclear spin pumping processes are in close competition.

Double Rashba Quantum Dots Ring as a Spin Filter

Directory of Open Access Journals (Sweden)

Chi Feng

2008-01-01

Full Text Available AbstractWe theoretically propose a double quantum dots (QDs ring to filter the electron spin that works due to the Rashba spin–orbit interaction (RSOI existing inside the QDs, the spin-dependent inter-dot tunneling coupling and the magnetic flux penetrating through the ring. By varying the RSOI-induced phase factor, the magnetic flux and the strength of the spin-dependent inter-dot tunneling coupling, which arises from a constant magnetic field applied on the tunneling junction between the QDs, a 100% spin-polarized conductance can be obtained. We show that both the spin orientations and the magnitude of it can be controlled by adjusting the above-mentioned parameters. The spin filtering effect is robust even in the presence of strong intra-dot Coulomb interactions and arbitrary dot-lead coupling configurations.

A theoretical study of resonant tunneling characteristics in triangular double-barrier diodes

International Nuclear Information System (INIS)

Wang Hongmei; Xu Huaizhe; Zhang Yafei

2006-01-01

Resonant tunneling characteristics of triangular double-barrier diodes have been investigated systematically in this Letter, using Airy function approach to solve time-independent Schroedinger function in triangular double-barrier structures. Originally, the exact analytic expressions of quasi-bound levels and quasi-level lifetime in symmetrical triangular double-barrier structures have been derived within the effective-mass approximation as a function of structure parameters including well width, slope width and barrier height. Based on our derived analytic expressions, numerical results show that quasi-bound levels and quasi-level lifetime vary nearly linearly with the structure parameters except that the second quasi-level lifetime changes parabolically with slope width. Furthermore, according to our improved transmission coefficient of triangular double-barrier structures under external electric field, the current densities of triangular double-barrier diodes with different slope width at 0 K have been calculated numerically. The results show that the N-shaped negative differential resistance behaviors have been observed in current-voltage characteristics and current-voltage characteristics depend on the slope width

Spin-dependent delay time and Hartman effect in asymmetrical graphene barrier under strain

Science.gov (United States)

Sattari, Farhad; Mirershadi, Soghra

2018-01-01

We study the spin-dependent tunneling time, including group delay and dwell time, in a graphene based asymmetrical barrier with Rashba spin-orbit interaction in the presence of strain, sandwiched between two normal leads. We find that the spin-dependent tunneling time can be efficiently tuned by the barrier width, and the bias voltage. Moreover, for the zigzag direction strain although the oscillation period of the dwell time does not change, the oscillation amplitude increases by increasing the incident electron angle. It is found that for the armchair direction strain unlike the zigzag direction the group delay time at the normal incidence depends on the spin state of electrons and Hartman effect can be observed. In addition, for the armchair direction strain the spin polarization increases with increasing the RSOI strength and the bias voltage. The magnitude and sign of spin polarization can be manipulated by strain. In particular, by applying an external electric field the efficiency of the spin polarization is improved significantly in strained graphene, and a fully spin-polarized current is generated.

Experimental study on the double barrier structure at room temperature

Energy Technology Data Exchange (ETDEWEB)

Sheng, H Y; Chua, S J [Centre for Optoelectronics, Dept. of Electrical Engineering, National Univ. of Singapore (Singapore)

1994-06-15

An experimental study of AlAs / GaAs / AlAs double barrier structure is carried out. The double barrier and quantum well structure are grown by MBE. The peak-to-valley ratio 2.6 : 1 with peak current density of 1.6 kA/cm/sup 2 at room temperature have been achieved. (authors)

Anisotropic Pauli Spin Blockade of Holes in a GaAs Double Quantum Dot

Science.gov (United States)

Wang, Qingwen; Klochan, Oleh; Hung, Jo-Tzu; Culcer, Dimitrie; Farrer, Ian; Ritchie, David; Hamilton, Alex

Electrically defined semiconductor quantum dots are appealing systems for spin manipulation and quantum information processing. Thanks to the weak hyperfine interaction and the strong spin-orbit interaction, heavy-holes in GaAs are promising candidates for all-electrical spin manipulation. However, making stable quantum dots in GaAs has only become possible recently, mainly because of difficulties in device fabrication and device stability. Here we present electrical transport measurements of heavy-holes in a lateral double quantum dot based on a GaAs /AlxGa1 - x As heterostructure. We observe clear Pauli spin blockade and show that the lifting of the spin blockade by an external magnetic field is extremely anisotropic. Numerical calculations of heavy-hole transport through a double quantum dot in the presence of strong spin-orbit interaction demonstrate quantitative agreement with experimental results, which indicates that the observed anisotropy can be explained by the anisotropic hole g-factor and the surface Dresselhaus spin-orbit coupling.

Detection of single electron spin resonance in a double quantum dota)

Science.gov (United States)

Koppens, F. H. L.; Buizert, C.; Vink, I. T.; Nowack, K. C.; Meunier, T.; Kouwenhoven, L. P.; Vandersypen, L. M. K.

2007-04-01

Spin-dependent transport measurements through a double quantum dot are a valuable tool for detecting both the coherent evolution of the spin state of a single electron, as well as the hybridization of two-electron spin states. In this article, we discuss a model that describes the transport cycle in this regime, including the effects of an oscillating magnetic field (causing electron spin resonance) and the effective nuclear fields on the spin states in the two dots. We numerically calculate the current flow due to the induced spin flips via electron spin resonance, and we study the detector efficiency for a range of parameters. The experimental data are compared with the model and we find a reasonable agreement.

Gate-tunable valley-spin filtering in silicene with magnetic barrier

Energy Technology Data Exchange (ETDEWEB)

Wu, X. Q., E-mail: xianqiangzhe@126.com [National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093 (China); Meng, H. [School of Physics and Telecommunication Engineering, Shanxi University of Technology, Hanzhong 723001 (China)

2015-05-28

We theoretically study the valley- and spin-resolved scattering through magnetic barrier in a one layer thick silicene, using the mode-matching method for the Dirac equation. We show that the spin-valley filtering effect can be achieved and can also be tuned completely through both a top and bottom gate. Moreover, when reversing the sign of the staggered potential, we find the direction of the valley polarization is switched while the direction of spin polarization is unchanged. These results can provide some meaningful information to design valley valve residing on silicene.

Anisotropy and Suppression of Spin-Orbit Interaction in a GaAs Double Quantum Dot

Science.gov (United States)

Hofmann, A.; Maisi, V. F.; Krähenmann, T.; Reichl, C.; Wegscheider, W.; Ensslin, K.; Ihn, T.

2017-10-01

The spin-flip tunneling rates are measured in GaAs-based double quantum dots by time-resolved charge detection. Such processes occur in the Pauli spin blockade regime with two electrons occupying the double quantum dot. Ways are presented for tuning the spin-flip tunneling rate, which on the one hand gives access to measuring the Rashba and Dresselhaus spin-orbit coefficients. On the other hand, they make it possible to turn on and off the effect of spin-orbit interaction with a high on/off ratio. The tuning is accomplished by choosing the alignment of the tunneling direction with respect to the crystallographic axes, as well as by choosing the orientation of the external magnetic field with respect to the spin-orbit magnetic field. Spin lifetimes of 10 s are achieved at a tunneling rate close to 1 kHz.

Anisotropy and Suppression of Spin-Orbit Interaction in a GaAs Double Quantum Dot.

Science.gov (United States)

Hofmann, A; Maisi, V F; Krähenmann, T; Reichl, C; Wegscheider, W; Ensslin, K; Ihn, T

2017-10-27

The spin-flip tunneling rates are measured in GaAs-based double quantum dots by time-resolved charge detection. Such processes occur in the Pauli spin blockade regime with two electrons occupying the double quantum dot. Ways are presented for tuning the spin-flip tunneling rate, which on the one hand gives access to measuring the Rashba and Dresselhaus spin-orbit coefficients. On the other hand, they make it possible to turn on and off the effect of spin-orbit interaction with a high on/off ratio. The tuning is accomplished by choosing the alignment of the tunneling direction with respect to the crystallographic axes, as well as by choosing the orientation of the external magnetic field with respect to the spin-orbit magnetic field. Spin lifetimes of 10 s are achieved at a tunneling rate close to 1 kHz.

On the generalized Hartman effect for symmetric double-barrier point potentials

International Nuclear Information System (INIS)

Lee, Molly A; Manzoni, Luiz A; Nyquist, Erik A; Lunardi, José T

2015-01-01

We consider the scattering of a non-relativistic particle by a symmetrical arrangement of two identical barriers in one-dimension, with the barriers given by the well-known four-parameter family of point interactions. We calculate the phase time and the stationary Salecker-Wigner-Peres clock time for the particular cases of a double δ and a double δ' barrier and investigate the off-resonance behavior of these time scales in the limit of opaque barriers, addressing the question of emergence of the generalized Hartman effect

A high performance ceria based interdiffusion barrier layer prepared by spin-coating

DEFF Research Database (Denmark)

Plonczak, Pawel; Joost, Mario; Hjelm, Johan

2011-01-01

A multiple spin-coating deposition procedure of Ce0.9Gd0.1O1.95 (CGO) for application in solid oxide fuel cells (SOFCs) was developed. The thin and dense CGO layer can be employed as a barrier layer between yttria stabilised zirconia (YSZ) electrolyte and a (La, Sr)(Co, Fe)O3 based cathode....... The decomposition of the polymer precursor used in the spin-coating process was studied. The depositions were performed on anode supported half cells. By controlling the sintering temperature between each spin-coating process, dense and crack-free CGO films with a thickness of approximately 1 μm were obtained....... The successive steps of dense layer production was investigated by scanning electron microscopy. X-ray diffraction was employed to monitor the crystal structure of the CGO layer sintered at different temperatures. The described spin coated barrier layer was evaluated using an anode supported cell...

Spin filtering in a Rashba–Dresselhaus–Aharonov–Bohm double-dot interferometer

International Nuclear Information System (INIS)

Matityahu, Shlomi; Aharony, Amnon; Entin-Wohlman, Ora; Tarucha, Seigo

2013-01-01

We study the spin-dependent transport of spin-1/2 electrons through an interferometer made of two elongated quantum dots or quantum nanowires, which are subject to both an Aharonov–Bohm flux and (Rashba and Dresselhaus) spin–orbit interactions. Similar to the diamond interferometer proposed in our previous papers (Aharony et al 2011 Phys. Rev. B 84 035323; Matityahu et al 2013 Phys. Rev. B 87 205438), we show that the double-dot interferometer can serve as a perfect spin filter due to a spin interference effect. By appropriately tuning the external electric and magnetic fields which determine the Aharonov–Casher and Aharonov–Bohm phases, and with some relations between the various hopping amplitudes and site energies, the interferometer blocks electrons with a specific spin polarization, independent of their energy. The blocked polarization and the polarization of the outgoing electrons is controlled solely by the external electric and magnetic fields and do not depend on the energy of the electrons. Furthermore, the spin filtering conditions become simpler in the linear-response regime, in which the electrons have a fixed energy. Unlike the diamond interferometer, spin filtering in the double-dot interferometer does not require high symmetry between the hopping amplitudes and site energies of the two branches of the interferometer and thus may be more appealing from an experimental point of view. (paper)

Double internal transport barrier triggering mechanism in tokamak plasmas

International Nuclear Information System (INIS)

Dong, Jiaqi; Mou, Zongze; Long, Yongxing; Mahajan, Swadesh M.

2004-01-01

Sheared flow layers created by energy released in magnetic reconnection processes are studied with the magneto hydrodynamics (MHD), aimed at internal transport barrier (ITB) dynamics. The double tearing mode induced by electron viscosity is investigated and proposed as a triggering mechanism for double internal transport barrier (DITB) observed in tokamak plasmas with non-monotonic safety factor profiles. The quasi-linear development of the mode is simulated and the emphasis is placed on the structure of sheared poloidal flow layers formed in the vicinity of the magnetic islands. For viscosity double tearing modes, it is shown that the sheared flows induced by the mode may reach the level required by the condition for ITB formation. Especially, the flow layers are found to form just outside the magnetic islands. The scaling of the generated velocity with plasma parameters is given. Possible explanation for the experimental observations that the preferential formation of transport barriers in the proximity of low order rational surface is discussed. (author)

Transmission through a potential barrier in Luttinger liquids with a topological spin gap

Science.gov (United States)

Kainaris, Nikolaos; Carr, Sam T.; Mirlin, Alexander D.

2018-03-01

We study theoretically the transport of the one-dimensional single-channel interacting electron gas through a strong potential barrier in the parameter regime where the spin sector of the low-energy theory is gapped by interaction (Luther-Emery liquid). There are two distinct phases of this nature, of which one is of particular interest as it exhibits nontrivial interaction-induced topological properties. Focusing on this phase and using bosonization and an expansion in the tunneling strength we calculate the conductance through the barrier as a function of the temperature as well as the local density of states (LDOS) at the barrier. Our main result concerns the mechanism of bound-state-mediated tunneling. The characteristic feature of the topological phase is the emergence of protected zero-energy bound states with fractional spin located at the impurity position. By flipping this fractional spin, single electrons can tunnel across the impurity even though the bulk spectrum for spin excitations is gapped. This results in a finite LDOS below the bulk gap and in a nonmonotonic behavior of the conductance. The system represents an important physical example of an interacting symmetry-protected topological phase, which combines features of a topological spin insulator and a topological charge metal, in which the topology can be probed by measuring transport properties.

Effect of Rashba and Dresselhaus Spin-Orbit Couplings on Electron Spin Polarization in a Hybrid Magnetic-Electric Barrier Nanostructure

Science.gov (United States)

Yang, Shi-Peng; Lu, Mao-Wang; Huang, Xin-Hong; Tang, Qiang; Zhou, Yong-Long

2017-04-01

A theoretical study has been carried out on the spin-dependent electron transport in a hybrid magnetic-electric barrier nanostructure with both Rashba and Dresselhaus spin-orbit couplings, which can be experimentally realized by depositing a ferromagnetic strip and a Schottky metal strip on top of a semiconductor heterostructure. The spin-orbit coupling-dependent transmission coefficient, conductance, and spin polarization are calculated by solving the Schrödinger equation exactly with the help of the transfer-matrix method. We find that both the magnitude and sign of the electron spin polarization vary strongly with the spin-orbit coupling strength. Thus, the degree of electron spin polarization can be manipulated by properly adjusting the spin-orbit coupling strength, and such a nanosystem can be employed as a controllable spin filter for spintronics applications.

Multi-channel spintronic transistor design based on magnetoelectric barriers and spin-orbital effects

International Nuclear Information System (INIS)

Fujita, T; Jalil, M B A; Tan, S G

2008-01-01

We present a spin transistor design based on spin-orbital interactions in a two-dimensional electron gas, with magnetic barriers induced by a patterned ferromagnetic gate. The proposed device overcomes certain shortcomings of previous spin transistor designs such as long device length and degradation of conductance modulation for multi-channel transport. The robustness of our device for multi-channel transport is unique in spin transistor designs based on spin-orbit coupling. The device is more practical in fabrication and experimental respects compared to previously conceived single-mode spin transistors

Fundamentals of the double-humped fission barrier

International Nuclear Information System (INIS)

Brack, M.

1980-01-01

We review the development of the theory of the fission barrier over the past forty years. Special emphasis is put on the shell-correction method of Strutinsky and its foundation and numerical verification from microscopical Hartree-Fock calculations. The different practical realisations of the method and its applications to the calculation of deformation energy surfaces are reviewed. The influence of the different shape degrees of freedom of the nucleus on the form of the fission barrier is discussed. Finally, we summarize some more recent developments concerning both experimental and theoretical aspects of the double-humped fission barrier. (author)

Synchronization of propagating spin-wave modes in a double-contact spin-torque oscillator: A micromagnetic study

International Nuclear Information System (INIS)

Puliafito, V.; Consolo, G.; Lopez-Diaz, L.; Azzerboni, B.

2014-01-01

This work tackles theoretical investigations on the synchronization of spin-wave modes generated by spin-transfer-torque in a double nano-contact geometry. The interaction mechanisms between the resulting oscillators are analyzed in the case of propagating modes which are excited via a normal-to-plane magnetic bias field. To characterize the underlying physical mechanisms, a multi-domain analysis is performed. It makes use of an equivalent electrical circuit, to deduce the output electrical power, and of micromagnetic simulations, through which information on the frequency spectra and on the spatial distribution of the wavefront of the emitted spin-waves is extracted. This study provides further and intriguing insights into the physical mechanisms giving rise to synchronization of spin-torque oscillators

Tunneling effect on double potential barriers GaAs and PbS

Science.gov (United States)

Prastowo, S. H. B.; Supriadi, B.; Ridlo, Z. R.; Prihandono, T.

2018-04-01

A simple model of transport phenomenon tunnelling effect through double barrier structure was developed. In this research we concentrate on the variation of electron energy which entering double potential barriers to transmission coefficient. The barriers using semiconductor materials GaAs (Galium Arsenide) with band-gap energy 1.424 eV, distance of lattice 0.565 nm, and PbS (Lead Sulphide) with band gap energy 0.41 eV distance of lattice is 18 nm. The Analysisof tunnelling effect on double potentials GaAs and PbS using Schrodinger’s equation, continuity, and matrix propagation to get transmission coefficient. The maximum energy of electron that we use is 1.0 eV, and observable from 0.0025 eV- 1.0 eV. The shows the highest transmission coefficient is0.9982 from electron energy 0.5123eV means electron can pass the barriers with probability 99.82%. Semiconductor from materials GaAs and PbS is one of selected material to design semiconductor device because of transmission coefficient directly proportional to bias the voltage of semiconductor device. Application of the theoretical analysis of resonant tunnelling effect on double barriers was used to design and develop new structure and combination of materials for semiconductor device (diode, transistor, and integrated circuit).

Double-barrier junction based dc SQUID

NARCIS (Netherlands)

Bartolomé, M.E.; Brinkman, Alexander; Flokstra, Jakob; Golubov, Alexandre Avraamovitch; Rogalla, Horst

2000-01-01

dc SQUIDs based on double-barrier Nb/Al/AlOx/Al/AlOx/Al/Nb junctions (DBSQs) have been fabricated and tested for the first time. The current–voltage curves have been measured at temperatures down to 1.4 K. The critical current, Ic, dependence on the temperature T is partially described by the

Spin-orbit effects in carbon-nanotube double quantum dots

DEFF Research Database (Denmark)

Weiss, S; Rashba, E I; Kuemmeth, Ferdinand

2010-01-01

We study the energy spectrum of symmetric double quantum dots in narrow-gap carbon nanotubes with one and two electrostatically confined electrons in the presence of spin-orbit and Coulomb interactions. Compared to GaAs quantum dots, the spectrum exhibits a much richer structure because of the spin...... between the dots. For the two-electron regime, the detailed structure of the spin-orbit split energy spectrum is investigated as a function of detuning between the quantum dots in a 22-dimensional Hilbert space within the framework of a single-longitudinal-mode model. We find a competing effect......-orbit interaction that couples the electron's isospin to its real spin through two independent coupling constants. In a single dot, both constants combine to split the spectrum into two Kramers doublets while the antisymmetric constant solely controls the difference in the tunneling rates of the Kramers doublets...

Relativistic spin precession in the double pulsar.

Science.gov (United States)

Breton, Rene P; Kaspi, Victoria M; Kramer, Michael; McLaughlin, Maura A; Lyutikov, Maxim; Ransom, Scott M; Stairs, Ingrid H; Ferdman, Robert D; Camilo, Fernando; Possenti, Andrea

2008-07-04

The double pulsar PSR J0737-3039A/B consists of two neutron stars in a highly relativistic orbit that displays a roughly 30-second eclipse when pulsar A passes behind pulsar B. Describing this eclipse of pulsar A as due to absorption occurring in the magnetosphere of pulsar B, we successfully used a simple geometric model to characterize the observed changing eclipse morphology and to measure the relativistic precession of pulsar B's spin axis around the total orbital angular momentum. This provides a test of general relativity and alternative theories of gravity in the strong-field regime. Our measured relativistic spin precession rate of 4.77 degrees (-0 degrees .65)(+0 degrees .66) per year (68% confidence level) is consistent with that predicted by general relativity within an uncertainty of 13%.

Quantum spin and charge pumping through double quantum dots with ferromagnetic leads

Energy Technology Data Exchange (ETDEWEB)

Pan, Hui, E-mail: hpan@buaa.edu.cn [Department of Physics, Beijing University of Aeronautics and Astronautics, Beijing 100191 (China); Key Laboratory of Micro-Nano Measurement-Manipulation and Physics (Ministry of Education), Beihang University, Beijing 100191 (China); Chen, Ziyu; Zhao, Sufen [Department of Physics, Beijing University of Aeronautics and Astronautics, Beijing 100191 (China); Lue, Rong [Department of Physics, Tsinghua University, Beijing 100084 (China)

2011-06-06

The pumping of electrons through double quantum dots (DQDs) attached to ferromagnetic leads have been theoretically investigated by using the nonequilibrium Green's function method. It is found that an oscillating electric field applied to the quantum dot may give rise to the pumped charge and spin currents. In the case that both leads are ferromagnet, a pure spin current can be generated in the antiparallel magnetization configuration, where no net charge current exists. The possibility of manipulating the pumped spin current is explored by tuning the dot level and the ac field. By making use of various tunings, the magnitude and direction of the pumped spin current can be well controlled. For the case that only one lead is ferromagnetic, both of the charge and spin currents can be pumped and flow in opposite directions on the average. The control of the magnitude and direction of the pumped charge and spin currents is also discussed by means of the magnetic flux threading through the DQD ring. -- Highlights: → We theoretically investigate the pumping of electrons through double quantum dots attached to ferromagnetic leads. → An oscillating electric field applied to the quantum dot may give rise to the pumped charge and spin currents. → When both leads are ferromagnet, a pure spin current can be generated in the antiparallel magnetization configuration. → By making use of various tunings, the magnitude and direction of the pumped spin current can be well controlled. → When only one lead is ferromagnetic, both of the charge and spin currents can be pumped and flow in opposite directions.

Alloy Dependence of Electron-Phonon Interactions in Double Barrier Structures

National Research Council Canada - National Science Library

Wallis, Corinne

1996-01-01

...)As double barrier structures as a function of the alloy concentration in the barrier. We have measured current-voltage and conductance-voltage curves associated with phonon-assisted tunneling with magnetic fields from 0 to 6.8 Tesla...

Single-electron tunneling in double-barrier nanostructures

International Nuclear Information System (INIS)

Goldman, V.J.; Su, B.; Cunningham, J.E.

1992-01-01

In this paper, the authors review experimental study of charge transport in nanometer double-barrier resonant tunneling devices. Heterostructure material is asymmetric: one barrier is substantially less transparent than the other. Resonant tunneling through size-quantized well states and single-electron charging of the well are thus largely separated in the two bias polarities. When the emitter barrier is more transparent than the collector barrier, electrons accumulate in the well; incremental electron occupation of the well is accompanied by Coulomb blockade leading to sharp steps of the tunneling current. When the emitter barrier is less transparent, the current reflects resonant tunneling of just one electron at a time through size-quantized well states; the current peaks and/or steps (depending on experimental parameters) appear in current-voltage characteristics. Magnetic field and temperature effects are also reviewed. Good agreement is achieved in comparison of many features of experimental data with simple theoretical models

Photon-assisted Tunneling In Double-barrier Superconducting Tunnel-junctions

NARCIS (Netherlands)

Dierichs, M. M. T. M.; Dieleman, P.; Wezelman, J. J.; Honingh, C. E.; Klapwijk, T. M.

1994-01-01

Double-barrier Nb/Al2O3/Al/Al2O3/Nb tunnel junctions are used as mixing elements in a 345 GHz waveguide mixer. Noise temperatures (double side band) down to 720 K at 3.0 K are obtained without the need to apply a magnetic field to suppress the Josephson current. It is shown that the composite

Resonant tunneling through double-barrier structures on graphene

International Nuclear Information System (INIS)

Deng Wei-Yin; Zhu Rui; Deng Wen-Ji; Xiao Yun-Chang

2014-01-01

Quantum resonant tunneling behaviors of double-barrier structures on graphene are investigated under the tight-binding approximation. The Klein tunneling and resonant tunneling are demonstrated for the quasiparticles with energy close to the Dirac points. The Klein tunneling vanishes by increasing the height of the potential barriers to more than 300 meV. The Dirac transport properties continuously change to the Schrödinger ones. It is found that the peaks of resonant tunneling approximate to the eigen-levels of graphene nanoribbons under appropriate boundary conditions. A comparison between the zigzag- and armchair-edge barriers is given. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

Spin-polarized currents in a two-terminal double quantum ring driven by magnetic fields and Rashba spin-orbit interaction

Science.gov (United States)

Dehghan, E.; Khoshnoud, D. Sanavi; Naeimi, A. S.

2018-06-01

Aim of this study is to investigate spin transportation in double quantum ring (DQR). We developed an array of DQR to measure the transmission coefficient and analyze the spin transportation through this system in the presence of Rashba spin-orbit interaction (RSOI) and magnetic flux estimated using S-matrix method. In this article, we compute the spin transport and spin-current characteristics numerically as functions of electron energy, angles between the leads, coupling constant of the leads, RSOI, and magnetic flux. Our results suggest that, for typical values of the magnetic flux (ϕ /ϕ0) and Rashba constant (αR), such system can demonstrates many spintronic properties. It is possible to design a new geometry of DQR by incoming electrons polarization in a way to optimize the system to work as a spin-filtering and spin-inverting nano-device with very high efficiency. The results prove that the spin current will strongly modulate with an increase in the magnetic flux and Rashba constant. Moreover it is shown that, when the lead coupling is weak, the perfect spin-inverter does not occur.

Optically controlled resonant tunneling in a double-barrier diode

Science.gov (United States)

Kan, S. C.; Wu, S.; Sanders, S.; Griffel, G.; Yariv, A.

1991-03-01

The resonant tunneling effect is optically enhanced in a GaAs/GaAlAs double-barrier structure that has partial lateral current confinement. The peak current increases and the valley current decreases simultaneously when the device surface is illuminated, due to the increased conductivity of the top layer of the structure. The effect of the lateral current confinement on the current-voltage characteristic of a double-barrier resonant tunneling structure was also studied. With increased lateral current confinement, the peak and valley current decrease at a different rate such that the current peak-to-valley ratio increases up to three times. The experimental results are explained by solving the electrostatic potential distribution in the structure using a simple three-layer model.

The parametrization of Coulomb barrier heights and positions using the double folding model

International Nuclear Information System (INIS)

Qu, W.W.; Zhang, G.L.; Le, X.Y.

2011-01-01

The Coulomb barrier heights and positions are systematically shown with mass numbers and charge radii of the interacting nuclei. The nuclear potential is calculated by using the double folding model with the density-dependence nucleon-nucleon interaction (CDM3Y6). The pocket formulas are obtained for the Coulomb barrier heights and positions by analyzing several hundreds of heavy-ion systems with mass numbers from light nuclei to heavy nuclei. The parameterized formulas can reproduce the calculated barrier heights and positions by using the double folding model within the accuracy of ±1%. Moreover, the results are agreeable with the experimental data. The relation between the barrier height and the barrier position is also studied.

Study on spin filtering and switching action in a double-triangular network chain

Science.gov (United States)

Zhang, Yongmei

2018-04-01

Spin transport properties of a double-triangular quantum network with local magnetic moment on backbones and magnetic flux penetrating the network plane are studied. Numerical simulation results show that such a quantum network will be a good candidate for spin filter and spin switch. Local dispersion and density of states are considered in the framework of tight-binding approximation. Transmission coefficients are calculated by the method of transfer matrix. Spin transmission is regulated by substrate magnetic moment and magnetic flux piercing those triangles. Experimental realization of such theoretical research will be conducive to designing of new spintronic devices.

Spin-dependent current in resonant tunneling diode with ferromagnetic GaMnN layers

International Nuclear Information System (INIS)

Tang, N.Y.

2009-01-01

The spin-polarized tunneling current through a double barrier resonant tunneling diode (RTD) with ferromagnetic GaMnN emitter/collector is investigated theoretically. Two distinct spin splitting peaks can be observed at current-voltage (I-V) characteristics at low temperature. The spin polarization decreases with the temperature due to the thermal effect of electron density of states. When charge polarization effect is considered at the heterostructure, the spin polarization is enhanced significantly. A highly spin-polarized current can be obtained depending on the polarization charge density.

Double spin asymmetry in exclusive rho(0) muoproduction at COMPASS

Czech Academy of Sciences Publication Activity Database

Alekseev, M.; Alexakhin, V. Yu.; Alexandrov, Yu.; Alexeev, G. D.; Amoroso, A.; Arbuzov, A.; Badelek, B.; Balestra, F.; Ball, J.; Baum, G.; Barth, J.; Bedfer, Y.; Bernet, C.; Bertini, R.; Bettinelli, M.; Birsa, R.; Bisplinghoff, J.; Bordalo, P.; Bradamante, F.; Bravar, A.; Bressan, A.; Brona, G.; Burtin, E.; Bussa, M.; Chapiro, A.; Chiosso, M.; Cicuttin, A.; Colantoni, M.; Costa, S.; Crespo, M.; d'Hose, N.; Dalla Torre, S.; Das, S.; Dasgupta, S. S.; De Masi, R.; Dedek, N.; Denisov, O.; Dhara, L.; Diaz, V.; Dinkelbach, A.; Donskov, S.; Dorofeev, V.; Doshita, N.; Duic, V.; Dünnweber, W.; Eversheim, P.; Eyrich, W.; Fabro, M.; Faessler, M.; Falaleev, V.; Ferrero, A.; Ferrero, L.; Finger, M.; Finger jr., M.; Fischer, H.; Franco, C.; Franz, J.; Friedrich, J.; Frolov, V.; Garfagnini, R.; Gautheron, F.; Gavrichtchouk, O.; Gazda, R.; Gerassimov, S.; Geyer, R.; Giorgi, M.; Gobbo, B.; Goertz, S.; Gorin, A. M.; Grabmüller, S.; Grajek, O.; Grasso, A.; Grube, B.; Gushterski, R.; Guskov, A.; Haas, F.; Hannappel, J.; von Harrach, D.; Hasegawa, T.; Heckmann, J.; Hedicke, S.; Heinsius, F.; Hermann, R.; Hess, C.; Hinterberger, F.; von Hodenberg, M.; Horikawa, N.; Horikawa, S.; Ilgner, C.; Ioukaev, A.; Ishimoto, S.; Ivanov, O.; Ivanshin, Yu.; Iwata, T.; Jahn, R.; Janata, A.; Jasinski, P.; Joosten, R.; Jouravlev, N. I.; Kabuss, E.; Kang, D.; Ketzer, B.; Khaustov, G.; Khokhlov, Y.; Kisselev, Y.; Klein, F.; Klimaszewski, K.; Koblitz, S.; Koivuniemi, J.; Kolosov, V.; Komissarov, E.; Kondo, K.; Königsmann, K.; Konorov, I.; Konstantinov, V.; Korentchenko, A.; Korzenev, A.; Kotzinian, A.; Koutchinski, N.; Kouznetsov, O.; Kravchuk, N.; Kral, A.; Kroumchtein, Z.; Kuhn, R.; Kunne, F.; Kurek, K.; Ladygin, M.; Lamanna, M.; Le Goff, J.; Lednev, A.; Lehmann, A.; Lichtenstadt, J.; Liska, T.; Ludwig, I.; Maggiora, A.; Maggiora, M.; Magnon, A.; Mallot, G.; Mann, A.; Marchand, C.; Marroncle, J.; Martin, A.; Marzec, J.; Massmann, F.; Matsuda, T.; Maximov, A.; Meyer, W.; Mielech, A.; Mikhailov, Y.; Moinester, M.; Mutter, M.; Nähle, O.; Nagaytsev, A.; Nagel, T.; Nassalski, J.; Neliba, S.; Nerling, F.; Neubert, S.; Neyret, D.; Nikolaenko, V.; Nikolaev, K.; Olshevsky, A.; Ostrick, M.; Padee, A.; Pagano, P.; Panebianco, S.; Panknin, R.; Panzieri, D.; Paul, S.; Pawlukiewicz-Kaminska, B.; Peshekhonov, D.; Peshekhonov, V.; Piragino, G.; Platchkov, S.; Pochodzalla, J.; Polak, J.; Polyakov, V.; Pretz, J.; Procureur, S.; Quintans, C.; Rajotte, J.; Rapatsky, V.; Ramos, S.; Reicherz, G.; Richter, A.; Robinet, F.; Rocco, E.; Rondio, E.; Rozhdestvensky, A.; Ryabchikov, D.; Samoylenko, V.; Sandacz, A.; Santos, H.; Sapozhnikov, M.; Sarkar, S.; Savin, I.; Schiavon, P.; Schill, C.; Schmitt, L.; Schönmeier, P.; Schröder, W.; Shevchenko, O.; Siebert, H.; Silva, L.; Sinha, L.; Sissakian, A.; Slunecka, M.; Smirnov, G.; Sosio, S.; Sozzi, F.; Sugonyaev, V.; Srnka, Aleš; Stinzing, F.; Stolarski, M.; Sulc, M.; Sulej, R.; Takabayashi, N.; Tchalishev, V.; Tessaro, S.; Tessarotto, F.; Teufel, A.; Tkatchev, L.; Venugopal, G.; Virius, M.; Vlassov, N.; Vossen, A.; Webb, R.; Weise, E.; Weitzel, Q.; Windmolders, R.; Wirth, S.; Wislicki, W.; Zaremba, K.; Zavertyaev, M.; Zemlyanichkina, E.; Zhao, J.; Ziegler, R.; Zvyagin, A.

2007-01-01

Roč. 52, č. 2 (2007), s. 255-265 ISSN 1434-6044 R&D Projects: GA MŠk ME 492 Institutional research plan: CEZ:AV0Z20650511 Keywords : double spin asymmetry * polarized deuterons * scattering * COMPASS Subject RIV: BF - Elementary Particles and High Energy Physics Impact factor: 3.255, year: 2007

Charge Dynamics and Spin Blockade in a Hybrid Double Quantum Dot in Silicon

Directory of Open Access Journals (Sweden)

Matias Urdampilleta

2015-08-01

Full Text Available Electron spin qubits in silicon, whether in quantum dots or in donor atoms, have long been considered attractive qubits for the implementation of a quantum computer because of silicon’s “semiconductor vacuum” character and its compatibility with the microelectronics industry. While donor electron spins in silicon provide extremely long coherence times and access to the nuclear spin via the hyperfine interaction, quantum dots have the complementary advantages of fast electrical operations, tunability, and scalability. Here, we present an approach to a novel hybrid double quantum dot by coupling a donor to a lithographically patterned artificial atom. Using gate-based rf reflectometry, we probe the charge stability of this double quantum-dot system and the variation of quantum capacitance at the interdot charge transition. Using microwave spectroscopy, we find a tunnel coupling of 2.7 GHz and characterize the charge dynamics, which reveals a charge T_{2}^{*} of 200 ps and a relaxation time T_{1} of 100 ns. Additionally, we demonstrate a spin blockade at the inderdot transition, opening up the possibility to operate this coupled system as a singlet-triplet qubit or to transfer a coherent spin state between the quantum dot and the donor electron and nucleus.

Dynamical nuclear spin polarization induced by electronic current through double quantum dots

International Nuclear Information System (INIS)

Lopez-Monis, Carlos; Platero, Gloria; Inarrea, Jesus

2011-01-01

We analyse electron-spin relaxation in electronic transport through coherently coupled double quantum dots (DQDs) in the spin blockade regime. In particular, we focus on hyperfine (HF) interaction as the spin-relaxation mechanism. We pay special attention to the effect of the dynamical nuclear spin polarization induced by the electronic current on the nuclear environment. We discuss the behaviour of the electronic current and the induced nuclear spin polarization versus an external magnetic field for different HF coupling intensities and interdot tunnelling strengths. We take into account, for each magnetic field, all HF-mediated spin-relaxation processes coming from different opposite spin level approaches. We find that the current as a function of the external magnetic field shows a peak or a dip and that the transition from a current dip to a current peak behaviour is obtained by decreasing the HF coupling or by increasing the interdot tunnelling strength. We give a physical picture in terms of the interplay between the electrons tunnelling out of the DQD and the spin-flip processes due to the nuclear environment.

Diffusion barrier performance of novel Ti/TaN double layers for Cu metallization

International Nuclear Information System (INIS)

Zhou, Y.M.; He, M.Z.; Xie, Z.

2014-01-01

Highlights: • Novel Ti/TaN double layers offering good stability as a barrier against Cu metallization have been made achievable by annealing in vacuum. • The Ti/TaN double layers improved the adhesion with Cu thin films and showed good diffusion barrier between Cu and SiO 2 /Si up to the annealing condition. • The failure mechanism of Ti/TaN bi-layer is similar with the Cu/TaN/Si metallization system in which Cu atoms diffuse through the grain boundary of barrier and react with silicon to form Cu 3 Si. - Abstract: Novel Ti/TaN double layers offering good stability as a barrier against Cu metallization have been made achievable by annealing in vacuum better than 1 × 10 −3 Pa. Ti/TaN double layers were formed on SiO 2 /Si substrates by DC magnetron sputtering and then the properties of Cu/Ti/TaN/SiO 2 /Si film stacks were studied. It was found that the Ti/TaN double layers provide good diffusion barrier between Cu and SiO 2 /Si up to 750 °C for 30 min. The XRD, Auger and EDS results show that the Cu–Si compounds like Cu 3 Si were formed by Cu diffusion through Ti/TaN barrier for the 800 °C annealed samples. It seems that the improved diffusion barrier property of Cu/Ti/TaN/SiO 2 /Si stack is due to the diffusion of nitrogen along the grain boundaries in Ti layer, which would decrease the defects in Ti film and block the diffusion path for Cu diffusion with increasing annealing temperature. The failure mechanism of Ti/TaN bi-layer is similar to the Cu/TaN/Si metallization system in which Cu atoms diffuse through the grain boundary of barrier and react with silicon to form Cu 3 Si

Collective Behavior of a Spin-Aligned Gas of Interwell Excitons in Double Quantum Wells

DEFF Research Database (Denmark)

Larionov, A. V.; Bayer, M.; Hvam, Jørn Märcher

2005-01-01

The kinetics of a spin-aligned gas of interwell excitons in GaAs/AlGaAs double quantum wells (n–i–n heterostructure) is studied. The temperature dependence of the spin relaxation time for excitons, in which a photoexcited electron and hole are spatially separated between two adjacent quantum wells...

Mass and spin of double dual solutions in Poincare gauge theory

International Nuclear Information System (INIS)

Mielke, E.W.; Wallner, R.P.

1988-01-01

Mass and spin are derived for a class of exact solutions of the Poincare gauge (PG) theory of gravity, provided the curvature fulfills a modified double-duality ansatz. It is executed a (3+1)-decomposition and clarified and semplified the structure of the energy-momentum and spin complexes. In case the quadratic PG Lagrangian contains the curvature-square pieces in the Yang-Mills fashion, the (3+1)-decomposition provides rather detailed information on admissible solutions. The PG energy-momentum complex turns out to be intimately related to the von Freud complex of general relativity

Coupled dynamics of interacting spin-1 bosons in a double-well potential

Science.gov (United States)

Carvalho, D. W. S.; Foerster, A.; Gusmão, M. A.

2018-03-01

We present a detailed analysis of dynamical processes involving two or three particles in a double-well potential. Motivated by experimental realizations of such a system with optically trapped cold atoms, we focus on spin-1 bosons with special attention on the effects of a spin-dependent interaction in addition to the usual Hubbard-like repulsive one. For a sufficiently weak tunneling amplitude in comparison to the dominant Hubbard coupling, particle motion is strongly correlated, occurring only under fine-tuned relationships between well-depth asymmetry and interactions. We highlight processes involving tunneling of coupled particle pairs and triads, emphasizing the role of the spin-dependent interaction in resonance conditions.

Ultrafast spin injection from Cd1-x Mn x Te magnetic barriers into a CdTe quantum well studied by pump-probe spectroscopy

International Nuclear Information System (INIS)

Aoshima, I.; Nishibayashi, K.; Souma, I.; Murayama, A.; Oka, Y.

2006-01-01

Spin injection from diluted magnetic semiconductor (DMS) barriers of Cd 1- x Mn x Te into a quantum well (QW) of CdTe is studied, by means of pump-probe absorption spectroscopy in magnetic fields. Fast decay characteristics of circularly polarized differential absorbances of spin-polarized excitons in the DMS barrier show the exciton injection time of 6 ps from the barriers into the QW. In accordance with the fast relaxation of the spin-polarized excitons from the barrier, we observe the rise of circular polarization degree for the differential absorption of the CdTe QW in magnetic fields, evidently indicating the spin injection. In addition, the circular polarization degree up to 0.3 is developed in the well immediately after pumping, originating from the fast relaxation of a heavy hole (hh) spin less than 0.2 ps, due to the giant Zeeman effect caused by the penetration of the hh wave function into the DMS barriers

Efficient option valuation of single and double barrier options

Science.gov (United States)

Kabaivanov, Stanimir; Milev, Mariyan; Koleva-Petkova, Dessislava; Vladev, Veselin

2017-12-01

In this paper we present an implementation of pricing algorithm for single and double barrier options using Mellin transformation with Maximum Entropy Inversion and its suitability for real-world applications. A detailed analysis of the applied algorithm is accompanied by implementation in C++ that is then compared to existing solutions in terms of efficiency and computational power. We then compare the applied method with existing closed-form solutions and well known methods of pricing barrier options that are based on finite differences.

Double Barriers and Magnetic Field in Bilayer Graphene

Science.gov (United States)

Redouani, Ilham; Jellal, Ahmed; Bahlouli, Hocine

2015-12-01

We study the transmission probability in an AB-stacked bilayer graphene of Dirac fermions scattered by a double-barrier structure in the presence of a magnetic field. We take into account the full four bands structure of the energy spectrum and use the suitable boundary conditions to determine the transmission probability. Our numerical results show that for energies higher than the interlayer coupling, four ways for transmission are possible while for energies less than the height of the barrier, Dirac fermions exhibit transmission resonances and only one transmission channel is available. We show that, for AB-stacked bilayer graphene, there is no Klein tunneling at normal incidence. We find that the transmission displays sharp peaks inside the transmission gap around the Dirac point within the barrier regions while they are absent around the Dirac point in the well region. The effect of the magnetic field, interlayer electrostatic potential, and various barrier geometry parameters on the transmission probabilities is also discussed.

Double Spin Asymmetries, ALL, for Di-hadrons in PHENIX

Science.gov (United States)

McKinney, Cameron

2010-11-01

The Relativistic Heavy Ion Collider (RHIC), through its polarized proton-proton collisions, provides leading order access to δG, the gluon contribution to the proton spin. Previous measurements have shown δG(x) dx to be consistent with zero in the Bjorken-x range of 0.05 to 0.2, whereas there is presently no measurement constraining δG (x) for x below or above this range. The Muon Piston Calorimeter provides the opportunity to expand the constrained range by allowing measurements of double spin asymmetries for azimuthally-separated pairs of 0̂'s at forward rapidity, 3.1<=|η|<=3.9, for √s=200 GeV and 500 GeV data taken in 2009. We present PYTHIA simulations studying the kinematics and possible asymmetries from di-hadron production at RHIC.

Dynamic-angle spinning and double rotation of quadrupolar nuclei

International Nuclear Information System (INIS)

Mueller, K.T.; California Univ., Berkeley, CA

1991-07-01

Nuclear magnetic resonance (NMR) spectroscopy of quadrupolar nuclei is complicated by the coupling of the electric quadrupole moment of the nucleus to local variations in the electric field. The quadrupolar interaction is a useful source of information about local molecular structure in solids, but it tends to broaden resonance lines causing crowding and overlap in NMR spectra. Magic- angle spinning, which is routinely used to produce high resolution spectra of spin-1/2 nuclei like carbon-13 and silicon-29, is incapable of fully narrowing resonances from quadrupolar nuclei when anisotropic second-order quadrupolar interactions are present. Two new sample-spinning techniques are introduced here that completely average the second-order quadrupolar coupling. Narrow resonance lines are obtained and individual resonances from distinct nuclear sites are identified. In dynamic-angle spinning (DAS) a rotor containing a powdered sample is reoriented between discrete angles with respect to high magnetic field. Evolution under anisotropic interactions at the different angles cancels, leaving only the isotropic evolution of the spin system. In the second technique, double rotation (DOR), a small rotor spins within a larger rotor so that the sample traces out a complicated trajectory in space. The relative orientation of the rotors and the orientation of the larger rotor within the magnetic field are selected to average both first- and second-order anisotropic broadening. The theory of quadrupolar interactions, coherent averaging theory, and motional narrowing by sample reorientation are reviewed with emphasis on the chemical shift anisotropy and second-order quadrupolar interactions experienced by half-odd integer spin quadrupolar nuclei. The DAS and DOR techniques are introduced and illustrated with application to common quadrupolar systems such as sodium-23 and oxygen-17 nuclei in solids

Dynamic-angle spinning and double rotation of quadrupolar nuclei

Energy Technology Data Exchange (ETDEWEB)

Mueller, K.T. (Lawrence Berkeley Lab., CA (United States) California Univ., Berkeley, CA (United States). Dept. of Chemistry)

1991-07-01

Nuclear magnetic resonance (NMR) spectroscopy of quadrupolar nuclei is complicated by the coupling of the electric quadrupole moment of the nucleus to local variations in the electric field. The quadrupolar interaction is a useful source of information about local molecular structure in solids, but it tends to broaden resonance lines causing crowding and overlap in NMR spectra. Magic- angle spinning, which is routinely used to produce high resolution spectra of spin-{1/2} nuclei like carbon-13 and silicon-29, is incapable of fully narrowing resonances from quadrupolar nuclei when anisotropic second-order quadrupolar interactions are present. Two new sample-spinning techniques are introduced here that completely average the second-order quadrupolar coupling. Narrow resonance lines are obtained and individual resonances from distinct nuclear sites are identified. In dynamic-angle spinning (DAS) a rotor containing a powdered sample is reoriented between discrete angles with respect to high magnetic field. Evolution under anisotropic interactions at the different angles cancels, leaving only the isotropic evolution of the spin system. In the second technique, double rotation (DOR), a small rotor spins within a larger rotor so that the sample traces out a complicated trajectory in space. The relative orientation of the rotors and the orientation of the larger rotor within the magnetic field are selected to average both first- and second-order anisotropic broadening. The theory of quadrupolar interactions, coherent averaging theory, and motional narrowing by sample reorientation are reviewed with emphasis on the chemical shift anisotropy and second-order quadrupolar interactions experienced by half-odd integer spin quadrupolar nuclei. The DAS and DOR techniques are introduced and illustrated with application to common quadrupolar systems such as sodium-23 and oxygen-17 nuclei in solids.

Transmittance and Tunneling Current through a Trapezoidal Barrier under Spin Polarization Consideration

Science.gov (United States)

Noor, F. A.; Nabila, E.; Mardianti, H.; Ariani, T. I.; Khairurrijal

2018-04-01

The transmittance and tunneling current in heterostructures under spin polarization consideration were studied by employing a zinc-blended structure for the heterostructures. An electron tunnels through a potential barrier by applying a bias voltage to the barrier, which is called the trapezoidal potential barrier. In order to study the transmittance, an Airy wave function approach was employed to find the transmittance. The obtained transmittance was then utilized to compute the tunneling current by using a Gauss quadrature method. It was shown that the transmittances were asymmetric with the incident angle of the electron. It was also shown that the tunneling currents increased as the bias voltage increased.

Barrier versus tilt exchange gate operations in spin-based quantum computing

Science.gov (United States)

Shim, Yun-Pil; Tahan, Charles

2018-04-01

We present a theory for understanding the exchange interaction between electron spins in neighboring quantum dots, either by changing the detuning of the two quantum dots or independently tuning the tunneling barrier between quantum dots. The Hubbard model and a more realistic confining-potential model are used to investigate how the tilting and barrier control affect the effective exchange coupling and thus the gate fidelity in both the detuning and symmetric regimes. We show that the exchange coupling is less sensitive to the charge noise through tunnel barrier control (while allowing for exchange coupling operations on a sweet spot where the exchange interaction has zero derivative with respect to the detuning). Both GaAs and Si quantum dots are considered, and we compare our results with experimental data showing qualitative agreements. Our results answer the open question of why barrier gates are preferable to tilt gates for exchange-based gate operations.

Silica-sol-based spin-coating barrier layer against phosphorous diffusion for crystalline silicon solar cells.

Science.gov (United States)

Uzum, Abdullah; Fukatsu, Ken; Kanda, Hiroyuki; Kimura, Yutaka; Tanimoto, Kenji; Yoshinaga, Seiya; Jiang, Yunjian; Ishikawa, Yasuaki; Uraoka, Yukiharu; Ito, Seigo

2014-01-01

The phosphorus barrier layers at the doping procedure of silicon wafers were fabricated using a spin-coating method with a mixture of silica-sol and tetramethylammonium hydroxide, which can be formed at the rear surface prior to the front phosphorus spin-on-demand (SOD) diffusion and directly annealed simultaneously with the front phosphorus layer. The optimization of coating thickness was obtained by changing the applied spin-coating speed; from 2,000 to 8,000 rpm. The CZ-Si p-type silicon solar cells were fabricated with/without using the rear silica-sol layer after taking the sheet resistance measurements, SIMS analysis, and SEM measurements of the silica-sol material evaluations into consideration. For the fabrication of solar cells, a spin-coating phosphorus source was used to form the n(+) emitter and was then diffused at 930°C for 35 min. The out-gas diffusion of phosphorus could be completely prevented by spin-coated silica-sol film placed on the rear side of the wafers coated prior to the diffusion process. A roughly 2% improvement in the conversion efficiency was observed when silica-sol was utilized during the phosphorus diffusion step. These results can suggest that the silica-sol material can be an attractive candidate for low-cost and easily applicable spin-coating barrier for any masking purpose involving phosphorus diffusion.

Ab initio transport across bismuth selenide surface barriers

KAUST Repository

Narayan, Awadhesh

2014-11-24

© 2014 American Physical Society. We investigate the effect of potential barriers in the form of step edges on the scattering properties of Bi2Se3(111) topological surface states by means of large-scale ab initio transport simulations. Our results demonstrate the suppression of perfect backscattering, while all other scattering processes, which do not entail a complete spin and momentum reversal, are allowed. Furthermore, we find that the spin of the surface state develops an out-of-plane component as it traverses the barrier. Our calculations reveal the existence of quasibound states in the vicinity of the surface barriers, which appear in the form of an enhanced density of states in the energy window corresponding to the topological state. For double barriers we demonstrate the formation of quantum well states. To complement our first-principles results we construct a two-dimensional low-energy effective model and illustrate its shortcomings. Our findings are discussed in the context of a number of recent experimental works.

Spin-dependent tunneling transport in a lateral magnetic diode

International Nuclear Information System (INIS)

Wang, Yu; Shi, Ying

2012-01-01

Based on the gate-tunable two-dimensional electron gas, we have constructed laterally a double-barrier resonant tunneling structure by employing a peculiar triple-gate configuration, namely a ferromagnetic gate sandwiched closely by a pair of Schottky gates. Because of the in-plane stray field of ferromagnetic gate, the resulting bound spin state in well gives rise to the remarkable resonant spin polarization following the spin-dependent resonant tunneling regime. Importantly, by aligning the bound spin state through surface gate-voltage configuration, this resonant spin polarization can be externally manipulated, showing the desirable features for the spin-logic device applications. -- Highlights: ► A lateral spin-RTD was proposed by applying triple-gate modulated 2DEG. ► Spin-dependent resonant tunneling transport and large resonant spin polarization has been clarified from the systematic simulation. ► Both electric and/or magnetic strategies can be employed to modulate the system spin transport, providing the essential features for the spin-logic application.

Phase transitions and magnetization of the mixed-spin Ising–Heisenberg double sawtooth frustrated ladder

Science.gov (United States)

Arian Zad, Hamid; Ananikian, Nerses

2018-04-01

The mixed spin-(1,1/2) Ising–Heisenberg double sawtooth ladder containing a mixture of both spin-1 and spin-1/2 nodal atoms, and the spin-1/2 interstitial dimers are approximately solved by the transfer-matrix method. Here, we study in detail the ground-state phase diagrams, also influences of the bilinear exchange coupling on the rungs and cyclic four-spin exchange interaction in square plaquette of each block on the magnetization and magnetic susceptibility of the suggested ladder at low temperature. Such a double sawtooth ladder may be found in a Shastry-Sutherland lattice-type. In spite of the spin ordering of odd and even blocks being different from each other, due to the commutation relation between all different block Hamiltonians, phase diagrams, magnetization behavior and thermodynamic properties of the model are the same for odd and even blocks. We show that at low temperature, both exchange couplings can change the quality and quantity of the magnetization plateaus versus the magnetic field changes. Specially, we find a new magnetization plateau M/Ms= 5/6 for this model. Besides, we examine the magnetic susceptibility and specific heat of the model in detail. It is proven that behaviors of the magnetization and the magnetic susceptibility coincide at low temperature. The specific heat displays diverse temperature dependencies, which include a Schottky-type peak at a special temperature interval. We observe that with increase of the bilinear exchange coupling on the rungs, second peak temperature dependence grows.

Thermopower in double planar tunnel junctions with ferromagnetic barriers and nonmagnetic electrodes

Energy Technology Data Exchange (ETDEWEB)

Wilczyński, M., E-mail: wilczyns@if.pw.edu.pl

2017-01-01

The Seebeck effect is investigated in double planar tunnel junctions consisting of nonmagnetic electrodes and the central layer separated by ferromagnetic barriers. Calculations are performed in the linear response theory using the free-electron model. The thermopower is analyzed as a function of the thickness of the central layer, temperature of the junctions and the relative orientation of magnetic moments of the barriers. It has been found that the thermopower can be significantly enhanced in the junction with special central layer thickness due to electron tunneling by resonant states. The thickness of the central layer for which the thermopower is enhanced depends not only on the temperature of the junction but also on the orientation of magnetic moments in the barriers. - Highlights: • Thermopower in the double planar junctions with magnetic barriers is analyzed. • Thermopower can be enhanced due to the resonant tunneling. • Thermopower depends on the magnetic configuration of the junction.

Double-decker phthalocyanine complex: Scanning tunneling microscopy study of film formation and spin properties

Science.gov (United States)

Komeda, Tadahiro; Katoh, Keiichi; Yamashita, Masahiro

2014-05-01

We review recent studies of double-decker and triple-decker phthalocyanine (Pc) molecules adsorbed on surfaces in terms of the bonding configuration, electronic structure and spin state. The Pc molecule has been studied extensively in surface science. A Pc molecule can contain various metal atoms at the center, and the class of the molecule is called as metal phthalocyanine (MPc). If the center metal has a large radius, like as lanthanoid metals, it becomes difficult to incorporate the metal atom inside of the Pc ring. Pc ligands are placed so as to sandwich the metal atom, where the metal atom is placed out of the Pc plane. The molecule in this configuration is called as a multilayer-decker Pc molecule. After the finding that the double-decker Pc lanthanoid complex shows single-molecule magnet (SMM) behavior, it has attracted a large attention. This is partly due to a rising interest for the ‘molecular spintronics’, in which the freedoms of spin and charge of an electron are applied to the quantum process of information. SMMs represent a class of compounds in which a single molecule behaves as a magnet. The reported blocking temperature, below which a single SMM molecule works as an quantum magnet, has been increasing with the development in the molecular design and synthesis techniques of multiple-decker Pc complex. However, even the bulk properties of these molecules are promising for the use of electronic materials, the films of multi-decker Pc molecules is less studied than those for the MPc molecules. An intriguing structural property is expected for the multi-decker Pc molecules since the Pc planes are linked by metal atoms. This gives an additional degree of freedom to the rotational angle between the two Pc ligands, and they can make a wheel-like symmetric rotation. Due to a simple and well-defined structure of a multi-decker Pc complex, the molecule can be a model molecule for molecular machine studies. The multi-decker Pc molecules can provide

Integrable open spin chains and the doubling trick in N = 2 SYM with fundamental matter

International Nuclear Information System (INIS)

Erler, Theodore G.; Mann, Nelia

2006-01-01

We demonstrate that the one-loop anomalous dimension matrix in N = 2 SYM with a single chiral hypermultiplet of fundamental matter, which is dual to AdS 5 x S 5 with a D7-brane filling AdS 5 and wrapped around an S 3 in the S 5 , is an integrable open spin chain Hamiltonian. We also use the doubling trick to relate these open spin chains to closed spin chains in pure N = 4 SYM. By using the AdS/CFT correspondence, we find a relation between the corresponding open and closed strings that differs from a simple doubling trick by terms that vanish in the semiclassical limit. We also demonstrate that in some cases the closed string is simpler and easier to study than the corresponding open string, and we speculate on the nature of corrections due to the presence of D-branes that this implies

Stability of trans-fermium elements at high spin: Measuring the fission barrier of 254No

International Nuclear Information System (INIS)

Henning, Greg

2012-01-01

Super heavy nuclei provide opportunities to study nuclear structure near three simultaneous limits: in charge Z, spin I and excitation energy E*. These nuclei exist only because of a fission barrier, created by shell effects. It is therefore important to determine the fission barrier and its spin dependence B f (I), which gives information on the shell energy E(shell)(I). Theoretical calculations predict different fission barrier heights from B f (I = 0) = 6.8 MeV for a macro-microscopic model to 8.7 MeV for Density Functional Theory calculations using the Gogny or Skyrme interactions. Hence, a measurement of B f provides a test for theories.To investigate the fission barrier, an established method is to measure the rise of fission with excitation energy, characterized by the ratio of decay widths Γ(fission)/Γ(total), using transfer reactions. However, for heavy elements such as 254 No, there is no suitable target for a transfer reaction. We therefore rely on the complementary decay widths ratio Γ γ /Γ(fission) and its spin dependence, deduced from the entry distribution (I, E*).Measurements of the gamma-ray multiplicity and total energy for 254 No have been performed with beam energies of 219 and 223 MeV in the reaction 208 Pb( 48 Ca,2n) at ATLAS (Argonne Tandem Linac Accelerator System). The 254 No gamma rays were detected using the Gammasphere array as a calorimeter - as well as the usual high resolution γ-ray detector. Coincidences with evaporation residues at the Fragment Mass Analyzer focal plane separated 254 No gamma rays from those from fission fragments, which are ≥ 10 6 more intense. From this measurement, the entry distribution - i.e. the initial distribution of I and E* - is constructed. Each point (I,E*) of the entry distribution is a point where gamma decay wins over fission and, therefore, gives information on the fission barrier. The measured entry distributions show an increase in the maximum spin and excitation energy from 219 to 223 Me

Magnetic and electric control of spin- and valley-polarized transport across tunnel junctions on monolayer WSe2

Science.gov (United States)

Tahir, M.; Krstajić, P. M.; Vasilopoulos, P.

2017-06-01

The recent experimental realization of high-quality WSe2 leads to the possibility of an efficient manipulation of its spin and valley degrees of freedom. Its electronic properties comprise a huge spin-orbit coupling, a direct band gap, and a strong anisotropic lifting of the degeneracy of the valley degree of freedom in a magnetic field. We evaluate its band structure and study ballistic electron transport through single and double junctions (or barriers) on monolayer WSe2 in the presence of spin Ms and valley Mv Zeeman fields and of an electric potential U . The conductance versus the field Ms or Mv decreases in a fluctuating manner. For a single junction, the spin Ps and valley Pv polarizations rise with M =Mv=2 Ms , reach a value of more than 55 % , and become perfect above U ≈45 meV while for a double junction this change can occur for U ≥50 meV and M ≥5 meV. In certain regions of the (M ,U ) plane Pv becomes perfect. The conductance gc, its spin-up and spin-down components, and both polarizations oscillate with the barrier width d . The ability to isolate various carrier degrees of freedom in WSe2 may render it a promising candidate for new spintronic and valleytronic devices.

Two-dimensional ferromagnet/semiconductor transition metal dichalcogenide contacts: p-type Schottky barrier and spin-injection control

KAUST Repository

Gan, Liyong; Cheng, Yingchun; Schwingenschlö gl, Udo; Zhang, Qingyun

2013-01-01

We study the ferromagnet/semiconductor contacts formed by transition metal dichalcogenide monolayers, focusing on semiconducting MoS2 and WS2 and ferromagnetic VS2. We investigate the degree of p-type doping and demonstrate tuning of the Schottky barrier height by vertical compressive pressure. An analytical model is presented for the barrier heights that accurately describes the numerical findings and is expected to be of general validity for all transition metal dichalcogenide metal/semiconductor contacts. Furthermore, magnetic proximity effects induce a 100% spin polarization at the Fermi level in the semiconductor where the spin splitting increases up to 0.70 eV for increasing pressure.

Two-dimensional ferromagnet/semiconductor transition metal dichalcogenide contacts: p-type Schottky barrier and spin-injection control

KAUST Repository

Gan, Liyong

2013-09-26

We study the ferromagnet/semiconductor contacts formed by transition metal dichalcogenide monolayers, focusing on semiconducting MoS2 and WS2 and ferromagnetic VS2. We investigate the degree of p-type doping and demonstrate tuning of the Schottky barrier height by vertical compressive pressure. An analytical model is presented for the barrier heights that accurately describes the numerical findings and is expected to be of general validity for all transition metal dichalcogenide metal/semiconductor contacts. Furthermore, magnetic proximity effects induce a 100% spin polarization at the Fermi level in the semiconductor where the spin splitting increases up to 0.70 eV for increasing pressure.

Analytic expression for the giant fieldlike spin torque in spin-filter magnetic tunnel junctions

Science.gov (United States)

Tang, Y.-H.; Huang, Z.-W.; Huang, B.-H.

2017-08-01

We propose analytic expressions for fieldlike, T⊥, and spin-transfer, T∥, spin torque components in the spin-filter-based magnetic tunnel junction (SFMTJ), by using the single-band tight-binding model with the nonequilibrium Keldysh formalism. In consideration of multireflection processes between noncollinear magnetization of the spin-filter (SF) barrier and the ferromagnetic (FM) electrode, the central spin-selective SF barrier plays an active role in the striking discovery T⊥≫T∥ , which can be further identified by the unusual barrier thickness dependence of giant T⊥. Our general expressions reveal the sinusoidal angular dependence of both spin torque components, even in the presence of the SF barrier.

Dependences of the Tunnel Magnetoresistance and Spin Transfer Torque on the Sizes and Concentration of Nanoparticles in Magnetic Tunnel Junctions

Science.gov (United States)

Esmaeili, A. M.; Useinov, A. N.; Useinov, N. Kh.

2018-01-01

Dependences of the tunnel magnetoresistance and in-plane component of the spin transfer torque on the applied voltage in a magnetic tunnel junction have been calculated in the approximation of ballistic transport of conduction electrons through an insulating layer with embedded magnetic or nonmagnetic nanoparticles. A single-barrier magnetic tunnel junction with a nanoparticle embedded in an insulator forms a double-barrier magnetic tunnel junction. It has been shown that the in-plane component of the spin transfer torque in the double-barrier magnetic tunnel junction can be higher than that in the single-barrier one at the same thickness of the insulating layer. The calculations show that nanoparticles embedded in the tunnel junction increase the probability of tunneling of electrons, create resonance conditions, and ensure the quantization of the conductance in contrast to the tunnel junction without nanoparticles. The calculated dependences of the tunnel magnetoresistance correspond to experimental data demonstrating peak anomalies and suppression of the maximum magnetoresistances at low voltages.

Double exchange model on triangular lattice: Non-coplanar spin configuration and phase transition near quarter filling

Energy Technology Data Exchange (ETDEWEB)

Zhang, G.P., E-mail: bugubird_zhang@hotmail.com [Department of Physics, Renmin University of China, Beijing 100872 (China); Zhang, Jian [3M Company, 3M Corporate Headquarters, 3M Center, St. Paul, MN 55144-1000 (United States); Zhang, Qi-Li [Data Center for High Energy Density Physics, Institute of Applied Physics and Computational Mathematics, Beijing 100094 (China); Zhou, Jiang-Tao [College of Optoelectronic Engineering, Shenzhen University, Shenzhen 518060 (China); Shangguan, M.H. [Department of Physics, Renmin University of China, Beijing 100872 (China)

2013-05-15

Unconventional anomalous Hall effect in frustrated pyrochlore oxides is originated from spin chirality of non-coplanar localized spins, which can also be induced by the competition between ferromagnetic (FM) double exchange interaction J{sub H} and antiferromagnetic superexchange interaction J{sub AF}. Here truncated polynomial expansion method and Monte Carlo simulation are adopted to investigate the above model on two-dimensional triangular lattice. We discuss the influence of the range of FM-type spin–spin correlation and strong electron–spin correlation on the truncation error of spin–spin correlation near quarter filling. Two peaks of the probability distribution of spin–spin correlation in non-coplanar spin configuration clearly show that non-coplanar spin configuration is an intermediate phase between FM and 120° spin phase. Near quarter filling, there is a phase transition from FM into non-coplanar and further into 120° spin phase when J{sub AF} continually increases. Finally the effect of temperature on the magnetic structure is discussed.

Generation and detection of spin polarization in parallel coupled double quantum dots connected to four terminals

International Nuclear Information System (INIS)

An, Xing-Tao; Mu, Hui-Ying; Li, Yu-Xian; Liu, Jian-Jun

2011-01-01

A four-terminal parallel double quantum dots (QDs) device is proposed to generate and detect the spin polarization in QDs. It is found that the spin accumulation in QDs and the spin-polarized currents in the upper and down leads can be generated when a bias voltage is applied between the left and right leads. It is more interesting that the spin polarization in the QDs can be detected using the upper and down leads. Moreover, the direction and magnitude of the spin polarization in the QDs, and in the upper and down leads can be tuned by the energy levels of QDs and the bias. -- Highlights: → The spin polarization in the quantum dots can be generated and controlled. → The spin polarization in quantum dots can be detected by the nonferromagnetic leads. → The system our studied is a discrete level spin Hall system.

Intrinsic errors in transporting a single-spin qubit through a double quantum dot

Science.gov (United States)

Li, Xiao; Barnes, Edwin; Kestner, J. P.; Das Sarma, S.

2017-07-01

Coherent spatial transport or shuttling of a single electron spin through semiconductor nanostructures is an important ingredient in many spintronic and quantum computing applications. In this work we analyze the possible errors in solid-state quantum computation due to leakage in transporting a single-spin qubit through a semiconductor double quantum dot. In particular, we consider three possible sources of leakage errors associated with such transport: finite ramping times, spin-dependent tunneling rates between quantum dots induced by finite spin-orbit couplings, and the presence of multiple valley states. In each case we present quantitative estimates of the leakage errors, and discuss how they can be minimized. The emphasis of this work is on how to deal with the errors intrinsic to the ideal semiconductor structure, such as leakage due to spin-orbit couplings, rather than on errors due to defects or noise sources. In particular, we show that in order to minimize leakage errors induced by spin-dependent tunnelings, it is necessary to apply pulses to perform certain carefully designed spin rotations. We further develop a formalism that allows one to systematically derive constraints on the pulse shapes and present a few examples to highlight the advantage of such an approach.

A Model of High-Frequency Self-Mixing in Double-Barrier Rectifier

Science.gov (United States)

Palma, Fabrizio; Rao, R.

2018-03-01

In this paper, a new model of the frequency dependence of the double-barrier THz rectifier is presented. The new structure is of interest because it can be realized by CMOS image sensor technology. Its application in a complex field such as that of THz receivers requires the availability of an analytical model, which is reliable and able to highlight the dependence on the parameters of the physical structure. The model is based on the hydrodynamic semiconductor equations, solved in the small signal approximation. The model depicts the mechanisms of the THz modulation of the charge in the depleted regions of the double-barrier device and explains the self-mixing process, the frequency dependence, and the detection capability of the structure. The model thus substantially improves the analytical models of the THz rectification available in literature, mainly based on lamped equivalent circuits.

Spin transport in spin filtering magnetic tunneling junctions.

Science.gov (United States)

Li, Yun; Lee, Eok Kyun

2007-11-01

Taking into account spin-orbit coupling and s-d interaction, we investigate spin transport properties of the magnetic tunneling junctions with spin filtering barrier using Landauer-Büttiker formalism implemented with the recursive algorithm to calculate the real-space Green function. We predict completely different bias dependence of negative tunnel magnetoresistance (TMR) between the systems composed of nonmagnetic electrode (NM)/ferromagnetic barrier (FB)/ferromagnet (FM) and NM/FB/FM/NM spin filtering tunnel junctions (SFTJs). Analyses of the results provide us possible ways of designing the systems which modulate the TMR in the negative magnetoresistance regime.

Pauli-spin blockade in a vertical double quantum dot holding two to five electrons

International Nuclear Information System (INIS)

Kodera, T; Arakawa, Y; Tarucha, S; Ono, K; Amaha, S

2009-01-01

We use a vertical double quantum dot (QD) to study spin blockade (SB) for the two-to five-electron states. SB observed for the two- and four-electron states is both assigned to Pauli exclusion with formation of a spin triplet state, and lifted by singlet-triplet admixing due to fluctuating nuclear field. SB observed for the five-electron state is caused by combined Pauli effect and Hund's rule. We observe a hysteretic behavior of the SB leakage current for up and down sweep of magnetic field, and argue that SB and its lifting by hyperfine interaction are subtle with the spin configuration and modified depending on the inter-dot detuning and number of electrons.

Measurements of the spin-orbit interaction and Landé g factor in a pure-phase InAs nanowire double quantum dot in the Pauli spin-blockade regime

Energy Technology Data Exchange (ETDEWEB)

Wang, Jiyin; Huang, Shaoyun, E-mail: hqxu@pku.edu.cn, E-mail: syhuang@pku.edu.cn; Lei, Zijin [Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University, Beijing 100871 (China); Pan, Dong; Zhao, Jianhua [State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China); Xu, H. Q., E-mail: hqxu@pku.edu.cn, E-mail: syhuang@pku.edu.cn [Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University, Beijing 100871 (China); Division of Solid State Physics, Lund University, Box 118, S-22100 Lund (Sweden)

2016-08-01

We demonstrate direct measurements of the spin-orbit interaction and Landé g factors in a semiconductor nanowire double quantum dot. The device is made from a single-crystal pure-phase InAs nanowire on top of an array of finger gates on a Si/SiO{sub 2} substrate and the measurements are performed in the Pauli spin-blockade regime. It is found that the double quantum dot exhibits a large singlet-triplet energy splitting of Δ{sub ST} ∼ 2.3 meV, a strong spin-orbit interaction of Δ{sub SO} ∼ 140 μeV, and a large and strongly level-dependent Landé g factor of ∼12.5. These results imply that single-crystal pure-phase InAs nanowires are desired semiconductor nanostructures for applications in quantum information technologies.

Role of phase breaking processes on resonant spin transfer torque nano-oscillators

Science.gov (United States)

Sharma, Abhishek; Tulapurkar, Ashwin A.; Muralidharan, Bhaskaran

2018-05-01

Spin transfer torque nano-oscillators (STNOs) based on magnetoresistance and spin transfer torque effects find potential applications in miniaturized wireless communication devices. Using the non-coherent non-equilibrium Green's function spin transport formalism self-consistently coupled with the stochastic Landau-Lifshitz-Gilbert-Slonczewski's equation and the Poisson's equation, we elucidate the role of elastic phase breaking on the proposed STNO design featuring double barrier resonant tunneling. Demonstrating the immunity of our proposed design, we predict that despite the presence of elastic dephasing, the resonant tunneling magnetic tunnel junction structures facilitate oscillator designs featuring a large enhancement in microwave power up to 8μW delivered to a 50Ω load.

Communication: Evaluating non-empirical double hybrid functionals for spin-state energetics in transition-metal complexes

Science.gov (United States)

Wilbraham, Liam; Adamo, Carlo; Ciofini, Ilaria

2018-01-01

The computationally assisted, accelerated design of inorganic functional materials often relies on the ability of a given electronic structure method to return the correct electronic ground state of the material in question. Outlining difficulties with current density functionals and wave function-based approaches, we highlight why double hybrid density functionals represent promising candidates for this purpose. In turn, we show that PBE0-DH (and PBE-QIDH) offers a significant improvement over its hybrid parent functional PBE0 [as well as B3LYP* and coupled cluster singles and doubles with perturbative triples (CCSD(T))] when computing spin-state splitting energies, using high-level diffusion Monte Carlo calculations as a reference. We refer to the opposing influence of Hartree-Fock (HF) exchange and MP2, which permits higher levels of HF exchange and a concomitant reduction in electronic density error, as the reason for the improved performance of double-hybrid functionals relative to hybrid functionals. Additionally, using 16 transition metal (Fe and Co) complexes, we show that low-spin states are stabilised by increasing contributions from MP2 within the double hybrid formulation. Furthermore, this stabilisation effect is more prominent for high field strength ligands than low field strength ligands.

Ground States of Ultracold Spin-1 Atoms in a Deep Double-Well Optical Superlattice in a Weak Magnetic Field

International Nuclear Information System (INIS)

Zheng Gong-Ping; Qin Shuai-Feng; Wang Shou-Yang; Jian Wen-Tian

2013-01-01

The ground states of the ultracold spin-1 atoms trapped in a deep one-dimensional double-well optical superlattice in a weak magnetic field are obtained. It is shown that the ground-state diagrams of the reduced double-well model are remarkably different for the antiferromagnetic and ferromagnetic condensates. The transition between the singlet state and nematic state is observed for the antiferromagnetic interaction atoms, which can be realized by modulating the tunneling parameter or the quadratic Zeeman energy. An experiment to distinguish the different spin states is suggested. (general)

Long-lived nanosecond spin coherence in high-mobility 2DEGs confined in double and triple quantum wells

Energy Technology Data Exchange (ETDEWEB)

Ullah, S.; Gusev, G. M.; Hernandez, F. G. G., E-mail: felixggh@if.usp.br [Instituto de Física, Universidade de São Paulo, Caixa Postal 66318, CEP 05315-970 São Paulo, SP (Brazil); Bakarov, A. K. [Institute of Semiconductor Physics and Novosibirsk State University, Novosibirsk 630090 (Russian Federation)

2016-06-07

We investigated the spin coherence of high-mobility two-dimensional electron gases confined in multilayer GaAs quantum wells. The dynamics of the spin polarization was optically studied using pump-probe techniques: time-resolved Kerr rotation and resonant spin amplification. For double and triple quantum wells doped beyond the metal-to-insulator transition, the spin-orbit interaction was tailored by the sample parameters of structural symmetry (Rashba constant), width, and electron density (Dresselhaus linear and cubic constants) which allow us to attain long dephasing times in the nanoseconds range. The determination of the scales, namely, transport scattering time, single-electron scattering time, electron-electron scattering time, and spin polarization decay time further supports the possibility of using n-doped multilayer systems for developing spintronic devices.

Longitudinal double spin asymmetries in single hadron quasi-real photoproduction at high p(T)

Czech Academy of Sciences Publication Activity Database

Adolph, C.; Akhunzyanov, R.; Alexeev, M.; Alexeev, G. D.; Amoroso, A.; Andrieux, V.; Anosov, V.; Augustyniak, W.; Austregesilo, A.; Azevedo, C.; Badelek, B.; Balestra, F.; Barth, J.; Beck, R.; Bedfer, Y.; Bernhard, J.; Bicker, K.; Bielert, E. R.; Birsa, R.; Bisplinghoff, J.; Bodlak, M.; Boer, M.; Bordalo, P.; Bradamante, F.; Braun, C.; Bressan, A.; Büchele, M.; Burtin, E.; Chang, W.-C.; Chiosso, M.; Choi, I.; Chung, S. U.; Cicuttin, A.; Crespo, M.; Curiel, Q.; Dalla Torre, S.; Dasgupta, S. S.; Dasgupta, S.; Denisov, O. Yu.; Dhara, L.; Donskov, S. V.; Doshita, N.; Duic, V.; Dünnweber, W.; Dziewiecki, M.; Efremov, A.; Eversheim, P.D.; Eyrich, W.; Faessler, M.; Ferrero, A.; Finger, M.; Finger jr., M.; Fischer, H.; Franco, C.; Fresne von Hohenesche, N.; Friedrich, J. M.; Frolov, V.; Fuchey, E.; Gautheron, F.; Gavrichtchouk, O. P.; Gerassimov, S.; Giordano, F.; Gnesi, I.; Gorzellik, M.; Grabmüller, S.; Grasso, A.; Grosse-Perdekapm, M.; Grube, B.; Grussenmeyer, T.; Guskov, A.; Haas, F.; Hahne, D.; von Harrach, D.; Hashimoto, R.; Heinsius, F. H.; Herrmann, F.; Hinterberger, F.; Horikawa, N.; d´Hose, N.; Hsieh, C.-Yu.; Huber, S.; Ishimoto, S.; Ivanov, A.; Ivanshin, Yu.; Iwata, T.; Jahn, R.; Jary, V.; Joosten, R.; Jörg, P.; Kabuss, E.; Ketzer, B.; Khaustov, G. V.; Khokhlov, Yu. A.; Kisselev, Y.; Klein, F.; Klimaszewski, K.; Koivuniemi, J. H.; Kolosov, V. N.; Kondo, K.; Königsmann, K.; Konorov, I.; Konstantinov, V. F.; Kotzinian, A. M.; Kouznetsov, O.; Krämer, M.; Kremser, P.; Krinner, F.; Kroumchtein, Z. V.; Kuchinski, N.; Kuhn, R.; Kunne, F.; Kurek, K.; Kurjata, R. P.; Lednev, A. A.; Lehmann, A.; Levillain, M.; Levorato, S.; Lichtenstadt, J.; Longo, R.; Maggiora, A.; Magnon, A.; Makins, N.; Makke, N.; Mallot, G. K.; Marchand, C.; Marianski, B.; Martin, A.; Marzec, J.; Matoušek, J.; Matsuda, H.; Matsuda, T.; Meshcheryakov, G.; Meyer, W.; Michigami, T.; Mikhailov, Yu. V.; Miyachi, Y.; Montuenga, P.; Nagaytsev, A.; Nerling, F.; Neyret, D.; Nikolaenko, V. I.; Nový, J.; Nowak, W. D.; Nukazuka, G.; Nunes, A.S.; Olshevsky, A. G.; Orlov, I.; Ostrick, M.; Panzieri, D.; Parsamyan, B.; Paul, S.; Peng, J.-C.; Pereira, F.; Pešek, M.; Peshekhonov, D. V.; Platchkov, S.; Pochodzalla, J.; Polyakov, V. A.; Pretz, J.; Quaresma, M.; Quintans, C.; Ramos, S.; Regali, C.; Reicherz, G.; Riedl, C.; Rossiyskaya, N. S.; Ryabchikov, D.; Rychter, A.; Samoylenko, V. D.; Sandacz, A.; Santos, C.; Sarkar, S.; Savin, I. A.; Sbrizzai, G.; Schiavon, P.; Schmidt, K.; Schmieden, H.; Schönning, K.; Schopferer, S.; Selyunin, A.; Shevchenko, O. Yu.; Silva, L.; Sinha, L.; Sirtl, S.; Slunecka, M.; Sozzi, F.; Srnka, Aleš; Stolarski, M.; Šulc, M.; Suzuki, H.; Szabelski, A.; Szameitat, T.; Sznajder, P.; Takekawa, S.; Tessaro, S.; Tessarotto, F.; Thibaud, F.; Tosello, F.; Tskhay, V.; Uhl, S.; Veloso, J.; Virius, M.; Weisrock, T.; Wilfert, M.; Ter Wolbeek, J.; Zaremba, K.; Zavertyaev, M.; Zemlyanichkina, E.; Ziembicki, M.; Zink, A.

2016-01-01

Roč. 753, FEB 10 (2016), s. 573-579 ISSN 0370-2693 R&D Projects: GA MŠk(CZ) LO1212 Institutional support: RVO:68081731 Keywords : COMPASS * deep inelastic scattering * double spin asymmetry Subject RIV: BG - Nuclear, Atomic and Molecular Physics, Colliders Impact factor: 4.807, year: 2016

Role of rare-earth ionic radii on the spin-phonon coupling in multiferroic ordered double perovskites

Czech Academy of Sciences Publication Activity Database

Macedo Filho, R.B.; Barbosa, D.A.B.; Reichlová, Helena; Martí, Xavier; de Menezes, A.S.; Ayala, A.P.; Paschoal, C.W.A.

2015-01-01

Roč. 7, č. 2 (2015), 075201 ISSN 2053-1591 Institutional support: RVO:68378271 Keywords : double perovskites * spin-phonon coupling * multiferroics Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 0.968, year: 2015

Superluminal tunneling of a relativistic half-integer spin particle through a potential barrier

Directory of Open Access Journals (Sweden)

Nanni Luca

2017-11-01

Full Text Available This paper investigates the problem of a relativistic Dirac half-integer spin free particle tunneling through a rectangular quantum-mechanical barrier. If the energy difference between the barrier and the particle is positive, and the barrier width is large enough, there is proof that the tunneling may be superluminal. For first spinor components of particle and antiparticle states, the tunneling is always superluminal regardless the barrier width. Conversely, the second spinor components of particle and antiparticle states may be either subluminal or superluminal depending on the barrier width. These results derive from studying the tunneling time in terms of phase time. For the first spinor components of particle and antiparticle states, it is always negative while for the second spinor components of particle and antiparticle states, it is always positive, whatever the height and width of the barrier. In total, the tunneling time always remains positive for particle states while it becomes negative for antiparticle ones. Furthermore, the phase time tends to zero, increasing the potential barrier both for particle and antiparticle states. This agrees with the interpretation of quantum tunneling that the Heisenberg uncertainty principle provides. This study’s results are innovative with respect to those available in the literature. Moreover, they show that the superluminal behaviour of particles occurs in those processes with high-energy confinement.

Spin accumulation in Si channels using CoFe/MgO/Si and CoFe/AlOx/Si tunnel contacts with high quality tunnel barriers prepared by radical-oxygen annealing

International Nuclear Information System (INIS)

Akushichi, T.; Shuto, Y.; Sugahara, S.; Takamura, Y.

2015-01-01

We investigate spin injection into Si channels using three-terminal spin-accumulation (3T-SA) devices with high-quality CoFe/MgO/n-Si and CoFe/AlO x /n-Si tunnel spin-injectors whose tunnel barriers are formed by radical oxidation of Mg and Al thin films deposited on Si(100) substrates and successive annealing under radical-oxygen exposure. When the MgO and AlO x barriers are not treated by the radical-oxygen annealing, the Hanle-effect signals obtained from the 3T-SA devices are closely fitted by a single Lorentz function representing a signal due to trap spins. On the other hand, when the tunnel barriers are annealed under radical-oxygen exposure, the Hanle-effect signals can be accurately fitted by the superposition of a Lorentz function and a non-Lorentz function representing a signal due to accumulated spins in the Si channel. These results suggest that the quality improvement of tunnel barriers treated by radical-oxygen annealing is highly effective for spin-injection into Si channels

Magnetic proximity control of spin currents and giant spin accumulation in graphene

Science.gov (United States)

Singh, Simranjeet

Two dimensional (2D) materials provide a unique platform to explore the full potential of magnetic proximity driven phenomena. We will present the experimental study showing the strong modulation of spin currents in graphene layers by controlling the direction of the exchange field due to the ferromagnetic-insulator (FMI) magnetization in graphene/FMI heterostructures. Owing to clean interfaces, a strong magnetic exchange coupling leads to the experimental observation of complete spin modulation at low externally applied magnetic fields in short graphene channels. We also discover that the graphene spin current can be fully dephased by randomly fluctuating exchange fields. This is manifested as an unusually strong temperature dependence of the non-local spin signals in graphene, which is due to spin relaxation by thermally-induced transverse fluctuations of the FMI magnetization. Additionally, it has been a challenge to grow a smooth, robust and pin-hole free tunnel barriers on graphene, which can withstand large current densities for efficient electrical spin injection. We have experimentally demonstrated giant spin accumulation in graphene lateral spin valves employing SrO tunnel barriers. Nonlocal spin signals, as large as 2 mV, are observed in graphene lateral spin valves at room temperature. This high spin accumulations observed using SrO tunnel barriers puts graphene on the roadmap for exploring the possibility of achieving a non-local magnetization switching due to the spin torque from electrically injected spins. Financial support from ONR (No. N00014-14-1-0350), NSF (No. DMR-1310661), and C-SPIN, one of the six SRC STARnet Centers, sponsored by MARCO and DARPA.

Electrical degradation of double-Schottky barrier in ZnO varistors

Energy Technology Data Exchange (ETDEWEB)

He, Jinliang, E-mail: hejl@tsinghua.edu.cn; Cheng, Chenlu; Hu, Jun [The State Key Lab of Power System, Department of Electrical Engineering, Tsinghua University, Beijing 100084 (China)

2016-03-15

Researches on electrical degradation of double-Schottky barrier in ZnO varistors are reviewed, aimed at the constitution of a full picture of universal degradation mechanism within the perspective of defect. Recent advances in study of ZnO materials by atomic-scale first-principles calculations are partly included and discussed, which brings to our attention distinct cognition on the native point defects and their profound impact on degradation.

Double-spin asymmetries in the cross section of rho sup 0 and phi production at intermediate energies

CERN Document Server

Airapetian, A; Akopov, Z; Amarian, M

2003-01-01

Double-spin asymmetries in the cross section of electroproduction of rho sup 0 and phi mesons on the proton and deuteron are measured at the HERMES experiment. The photoabsorption asymmetry in exclusive rho sup 0 electroproduction on the proton exhibits a positive tendency. This is consistent with theoretical predictions that the exchange of an object with unnatural parity contributes to exclusive rho sup 0 electroproduction by transverse photons. The photoabsorption asymmetry on the deuteron is found to be consistent with zero. Double-spin asymmetries in rho sup 0 and phi meson electroproduction by quasi-real photons were also found to be consistent with zero; the asymmetry in the case of the phi meson is compatible with a theoretical prediction which involves s anti s knockout from the nucleon. (orig.)

Resolution doubling in fluorescence microscopy with confocal spinning-disk image scanning microscopy.

Science.gov (United States)

Schulz, Olaf; Pieper, Christoph; Clever, Michaela; Pfaff, Janine; Ruhlandt, Aike; Kehlenbach, Ralph H; Wouters, Fred S; Großhans, Jörg; Bunt, Gertrude; Enderlein, Jörg

2013-12-24

We demonstrate how a conventional confocal spinning-disk (CSD) microscope can be converted into a doubly resolving image scanning microscopy (ISM) system without changing any part of its optical or mechanical elements. Making use of the intrinsic properties of a CSD microscope, we illuminate stroboscopically, generating an array of excitation foci that are moved across the sample by varying the phase between stroboscopic excitation and rotation of the spinning disk. ISM then generates an image with nearly doubled resolution. Using conventional fluorophores, we have imaged single nuclear pore complexes in the nuclear membrane and aggregates of GFP-conjugated Tau protein in three dimensions. Multicolor ISM was shown on cytoskeletal-associated structural proteins and on 3D four-color images including MitoTracker and Hoechst staining. The simple adaptation of conventional CSD equipment allows superresolution investigations of a broad variety of cell biological questions.

Output voltage calculations in double barrier magnetic tunnel junctions with asymmetric voltage behavior

KAUST Repository

Useinov, Arthur; Mryasov, Oleg; Kosel, Jü rgen

2011-01-01

In this paper we study the asymmetric voltage behavior (AVB) of the tunnel magnetoresistance (TMR) for single and double barrier magnetic tunnel junctions (MTJs) in range of a quasi-classical free electron model. Numerical calculations of the TMR

Coherent control of two individual electron spins and influence of hyperfine coupling in a double quantum dot

International Nuclear Information System (INIS)

Tarucha, S; Obata, T; Pioro-Ladriere, M; Brunner, R; Shin, Y-S; Kubo, T; Tokura, Y

2011-01-01

Electric dipole spin resonance of two individual electrons and the influence of hyperfine coupling on the spin resonance are studied for a double quantum dot equipped with a micro-magnet. The spin resonance occurs by oscillating the electron in each dot at microwave (MW) frequencies in the presence of a micro-magnet induced stray field. The observed continuous wave (CW) and time-resolved spin resonances are consistent with calculations in which the MW induced AC electric field and micro-magnet induced stray field are taken into account. The influence of hyperfine coupling causes an increase and broadening of the respective CW spin resonance peaks through dynamical nuclear polarization when sweeping up the magnetic field. This behaviour appears stronger for the larger of the two spin resonance peaks and in general becomes more pronounced as the MW power increases, both reflecting that the electron-nuclei interaction is more efficient for the stronger spin resonance. In addition the hyperfine coupling effect only becomes pronounced when the MW induced AC magnetic field exceeds the fluctuating nuclear field.

Energy levels of a spin-orbit-coupled Bose-Einstein condensate in a double-well potential

Science.gov (United States)

Wang, Wen-Yuan; Cao, Hui; Zhu, Shi-Liang; Liu, Jie; Fu, Li-Bin

2015-02-01

We investigate the energy levels of a spin-orbit-coupled Bose-Einstein condensate in a double-well potential under the mean-field approximation. We find that the energy levels of the system can be significantly influenced by the atomic interactions. Without atomic interaction, four energy levels change linearly with the tunneling amplitude, the Raman coupling, and the spin-orbit coupling. However, whenever atomic interaction is considered, three more energy levels will appear, which have a nonlinear dependence on those parameters above. These three energy levels are multi-degenerate and related to the macro-symmetry of the system.

A study of the deep structure of the energy landscape of glassy polystyrene: the exponential distribution of the energy barriers revealed by high-field electron spin resonance spectroscopy

International Nuclear Information System (INIS)

Bercu, V; Martinelli, M; Massa, C A; Pardi, L A; Leporini, D

2004-01-01

The reorientation of one small paramagnetic molecule (spin probe) in glassy polystyrene (PS) is studied by high-field electron spin resonance spectroscopy at two different Larmor frequencies (190 and 285 GHz). The exponential distribution of the energy barriers for the rotational motion of the spin probe is unambiguously evidenced at both 240 and 270 K. The same shape for the distribution of the energy barriers of PS was evidenced by the master curves provided by previous mechanical and light scattering studies. The breadth of the energy barrier distribution of the spin probe is in the range of the estimates of the breadth of the PS energy barrier distribution. The evidence that the deep structure of the energy landscape of PS exhibits the exponential shape of the energy barrier distribution agrees with the results from extreme-value statistics (Bouchaud and Mezard 1997 J. Phys. A: Math. Gen. 30 7997) and the trap model by Bouchaud and co-workers (1996 J. Phys. A: Math. Gen. 29 3847, 2001 Phys. Rev. B 64 104417). (letter to the editor)

Longitudinal Double Spin Asymmetry in Inclusive π0 Production at Forward Rapidities in √s=62.4 GeV Polarized p+p Collisions at RHIC

International Nuclear Information System (INIS)

Kazantsev, Andrey

2007-01-01

The gluons' Gluons spin contribution to proton spin is an important the key aspect for understanding the proton spin structure. It can be probed by the double helicity asymmetry of π0 production in polarized p+p collisions. During the longitudinally polarized proton run in 2006 PHENIX collected substantial data at √s=62.4 GeV and √s=200 GeV. In 2006 PHENIX commissioned a new electromagnetic calorimeter, the Muon Piston Calorimeter (MPC), located in the forward rapidity rapidities region. This calorimeter allows to significantly improves the PHENIX acceptance. In this report the MPC feasibility of the MPC for longitudinal double spin asymmetry studies is discussed

Spin-orbit splitted excited states using explicitly-correlated equation-of-motion coupled-cluster singles and doubles eigenvectors

Science.gov (United States)

Bokhan, Denis; Trubnikov, Dmitrii N.; Perera, Ajith; Bartlett, Rodney J.

2018-04-01

An explicitly-correlated method of calculation of excited states with spin-orbit couplings, has been formulated and implemented. Developed approach utilizes left and right eigenvectors of equation-of-motion coupled-cluster model, which is based on the linearly approximated explicitly correlated coupled-cluster singles and doubles [CCSD(F12)] method. The spin-orbit interactions are introduced by using the spin-orbit mean field (SOMF) approximation of the Breit-Pauli Hamiltonian. Numerical tests for several atoms and molecules show good agreement between explicitly-correlated results and the corresponding values, calculated in complete basis set limit (CBS); the highly-accurate excitation energies can be obtained already at triple- ζ level.

Pumped shot noise in adiabatically modulated graphene-based double-barrier structures.

Science.gov (United States)

Zhu, Rui; Lai, Maoli

2011-11-16

Quantum pumping processes are accompanied by considerable quantum noise. Based on the scattering approach, we investigated the pumped shot noise properties in adiabatically modulated graphene-based double-barrier structures. It is found that compared with the Poisson processes, the pumped shot noise is dramatically enhanced where the dc pumped current changes flow direction, which demonstrates the effect of the Klein paradox.

Pumped shot noise in adiabatically modulated graphene-based double-barrier structures

Science.gov (United States)

Zhu, Rui; Lai, Maoli

2011-11-01

Quantum pumping processes are accompanied by considerable quantum noise. Based on the scattering approach, we investigated the pumped shot noise properties in adiabatically modulated graphene-based double-barrier structures. It is found that compared with the Poisson processes, the pumped shot noise is dramatically enhanced where the dc pumped current changes flow direction, which demonstrates the effect of the Klein paradox.

Spin-Polarization in Quasi-Magnetic Tunnel Junctions

Science.gov (United States)

Xie, Zheng-Wei; Li, Ling

2017-05-01

Spin polarization in ferromagnetic metal/insulator/spin-filter barrier/nonmagnetic metal, referred to as quasi-magnetic tunnel junctions, is studied within the free-electron model. Our results show that large positive or negative spin-polarization can be obtained at high bias in quasi-magnetic tunnel junctions, and within large bias variation regions, the degree of spin-polarization can be linearly tuned by bias. These linear variation regions of spin-polarization with bias are influenced by the barrier thicknesses, barrier heights and molecular fields in the spin-filter (SF) layer. Among them, the variations of thickness and heights of the insulating and SF barrier layers have influence on the value of spin-polarization and the linear variation regions of spin-polarization with bias. However, the variations of molecular field in the SF layer only have influence on the values of the spin-polarization and the influences on the linear variation regions of spin-polarization with bias are slight. Supported by the Key Natural Science Fund of Sichuan Province Education Department under Grant Nos 13ZA0149 and 16ZA0047, and the Construction Plan for Scientific Research Innovation Team of Universities in Sichuan Province under Grant No 12TD008.

Towards spin injection into silicon

Energy Technology Data Exchange (ETDEWEB)

Dash, S.P.

2007-08-15

Si has been studied for the purpose of spin injection extensively in this thesis. Three different concepts for spin injection into Si have been addressed: (1) spin injection through a ferromagnet-Si Schottky contact, (2) spin injection using MgO tunnel barriers in between the ferromagnet and Si, and (3) spin injection from Mn-doped Si (DMS) as spin aligner. (1) FM-Si Schottky contact for spin injection: To be able to improve the interface qualities one needs to understand the atomic processes involved in the formation of silicide phases. In order to obtain more detailed insight into the formation of such phases the initial stages of growth of Co and Fe were studied in situ by HRBS with monolayer depth resolution.(2) MgO tunnel barrier for spin injection into Si: The fabrication and characterization of ultra-thin crystalline MgO tunnel barriers on Si (100) was presented. (3) Mn doped Si for spin injection: Si-based diluted magnetic semiconductor samples were prepared by doping Si with Mn by two different methods i) by Mn ion implantation and ii) by in-diffusion of Mn atoms (solid state growth). (orig.)

Dichromatic light halting using double spin coherence gratings

International Nuclear Information System (INIS)

Ham, Byoung S; Hahn, Joonseong

2011-01-01

Light control by another light has drawn much attention in nonlinear quantum optics. Achieving all-optical control of the refractive index has been a key issue in all-optical information processing. Ultraslow light has been a good candidate for this purpose, where a giant phase shift can be achieved. The recent presentation of stationary light utilizing ultraslow light is an advanced example of such research. The stationary light functions as cavity quantum electrodynamics, where no high-Q-factor mirror pair is needed. In this paper, we report on two-color halted light pulses inside a solid medium, where the trapping time is comparable with that of ultraslow light but is much longer than quantum mapping storage time. The observed two-color halted light is achieved by means of double Raman optical field-excited spin coherence gratings, where slow light enhanced backward nondegenerate four-wave mixing processes play a major role.

Dichromatic light halting using double spin coherence gratings

Energy Technology Data Exchange (ETDEWEB)

Ham, Byoung S; Hahn, Joonseong, E-mail: bham@inha.ac.kr [Center for Photon Information Processing, School of Electrical Engineering, Inha University, 253 Yoghyun-dong, Nam-gu, Incheon 402-751 (Korea, Republic of)

2011-08-15

Light control by another light has drawn much attention in nonlinear quantum optics. Achieving all-optical control of the refractive index has been a key issue in all-optical information processing. Ultraslow light has been a good candidate for this purpose, where a giant phase shift can be achieved. The recent presentation of stationary light utilizing ultraslow light is an advanced example of such research. The stationary light functions as cavity quantum electrodynamics, where no high-Q-factor mirror pair is needed. In this paper, we report on two-color halted light pulses inside a solid medium, where the trapping time is comparable with that of ultraslow light but is much longer than quantum mapping storage time. The observed two-color halted light is achieved by means of double Raman optical field-excited spin coherence gratings, where slow light enhanced backward nondegenerate four-wave mixing processes play a major role.

Large Magnetoresistance at High Bias Voltage in Double-layer Organic Spin Valves

Science.gov (United States)

Subedi, R. C.; Liang, S. H.; Geng, R.; Zhang, Q. T.; Lou, L.; Wang, J.; Han, X. F.; Nguyen, T. D.

We report studies of magnetoresistance (MR) in double-layer organic spin valves (DOSV) using tris (8-hydroxyquinolinato) aluminum (Alq3) spacers. The device exhibits three distinct resistance levels depending on the relative magnetizations of the ferromagnetic electrodes. We observed a much weaker bias voltage dependence of MR in the device compared to that in the conventional organic spin valve (OSV). The MR magnitude reduces by the factor of two at 0.7 V bias voltage in the DOSV compared to 0.02 V in the conventional OSV. Remarkably, the MR magnitude reaches 0.3% at 6 V bias in the DOSVs, the largest MR response ever reported in OSVs at this bias. Our finding may have a significant impact on achieving high efficient bipolar OSVs strictly performed at high voltages. University of Georgia start-up fund, Ministry of Education, Singapore, National Natural Science Foundation of China.

Spin-related tunneling through a nanostructured electric-magnetic barrier on the surface of a topological insulator.

Science.gov (United States)

Wu, Zhenhua; Li, Jun

2012-01-27

We investigate quantum tunneling through a single electric and/or magnetic barrier on the surface of a three-dimensional topological insulator. We found that (1) the propagating behavior of electrons in such system exhibits a strong dependence on the direction of the incident electron wavevector and incident energy, giving the possibility to construct a wave vector and/or energy filter; (2) the spin orientation can be tuned by changing the magnetic barrier structure as well as the incident angles and energies.PACS numbers: 72.25.Dc; 73.20.-r; 73.23.-b; 75.70.-i.

Pump-probe spectroscopy of spin-injection dynamics in double quantum wells of diluted magnetic semiconductor

International Nuclear Information System (INIS)

Nishibayashi, K.; Aoshima, I.; Souma, I.; Murayama, A.; Oka, Y.

2006-01-01

Dynamics of spin injection has been investigated in a double quantum well (DQW) composed of a diluted magnetic semiconductor by the pump-probe transient absorption spectroscopy in magnetic field. The DQW consists of a non-magnetic well (NMW) of CdTe and a magnetic well (MW) of Cd 0.92 Mn 0.08 Te. The MW shows a transient absorption saturation in the exciton band for more than 200 ps after the optical pumping, while the exciton photoluminescence does not arise from the MW. In the NMW, the circular polarization degree of the transient absorption saturation shows an increase with increasing time. The results are interpreted by the individual tunneling of spin-polarized electrons and holes from the MW to the NMW with different tunneling times. Depolarization processes of the carrier spins in the MW and the NMW are also discussed

Reliability enhancement due to in-situ post-oxidation of sputtered MgO barrier in double MgO barrier magnetic tunnel junction

Directory of Open Access Journals (Sweden)

Chikako Yoshida

2017-06-01

Full Text Available We have investigated the effects of in-situ post-oxidation (PO of a sputtered MgO barrier in a double-MgO-barrier magnetic tunnel junction (MTJ and found that the short error rate was significantly reduced, the magnetoresistance (MR ratio was increased approximately 18%, and the endurance lifetime was extend. In addition, we found that the distribution of breakdown number (a measure of endurance exhibits trimodal characteristics, which indicates competition between extrinsic and intrinsic failures. This improvement in reliability might be related to the suppression of Fe and Co diffusion to the MgO barrier, as revealed by electron energy-loss spectroscopy (EELS analysis.

Spin transfer torque with spin diffusion in magnetic tunnel junctions

KAUST Repository

Manchon, Aurelien

2012-08-09

Spin transport in magnetic tunnel junctions in the presence of spin diffusion is considered theoretically. Combining ballistic tunneling across the barrier and diffusive transport in the electrodes, we solve the spin dynamics equation in the metallic layers. We show that spin diffusion mixes the transverse spin current components and dramatically modifies the bias dependence of the effective spin transfer torque. This leads to a significant linear bias dependence of the out-of-plane torque, as well as a nonconventional thickness dependence of both spin torque components.

Controllable spin filter composed of ferromagnetic AB-stacking bilayer graphenes

International Nuclear Information System (INIS)

Yu, Yong; Liang, Qifeng; Dong, Jinming

2011-01-01

The electron's tunneling and spin transport in the normal/ferromagnetic/normal (N/FM/N) AB-stacking bilayer graphene (BLG) junction have been studied using Landauer-Buettiker formula. It is found that the resonant conductance peaks could be split well into spin-up and down ones by the exchange field in its FM barrier, leading to a very large spin polarization. More importantly, if a perpendicular electric field is also applied on the FM barrier, a completely spin-polarized flow can be realized by changing its barrier height, making the N/FM/N AB-stacking BLG junction act as a controllable spin filter. -- Highlights: → A study of spin transport in the ferromagnetic bilayer graphene junctions. → A serious of resonant conductance peaks could appear by tuning the barrier height. → The exchange splitting in FM barrier leads to a large spin polarization P. → P=±1 can be realized if a perpendicular electric field is applied to the FM barrier.

Equation-of-motion coupled cluster method for high spin double electron attachment calculations

Energy Technology Data Exchange (ETDEWEB)

Musiał, Monika, E-mail: musial@ich.us.edu.pl; Lupa, Łukasz; Kucharski, Stanisław A. [Institute of Chemistry, University of Silesia, Szkolna 9, 40-006 Katowice (Poland)

2014-03-21

The new formulation of the equation-of-motion (EOM) coupled cluster (CC) approach applicable to the calculations of the double electron attachment (DEA) states for the high spin components is proposed. The new EOM equations are derived for the high spin triplet and quintet states. In both cases the new equations are easier to solve but the substantial simplification is observed in the case of quintets. Out of 21 diagrammatic terms contributing to the standard DEA-EOM-CCSDT equations for the R{sub 2} and R{sub 3} amplitudes only four terms survive contributing to the R{sub 3} part. The implemented method has been applied to the calculations of the excited states (singlets, triplets, and quintets) energies of the carbon and silicon atoms and potential energy curves for selected states of the Na{sub 2} (triplets) and B{sub 2} (quintets) molecules.

Scalable quantum computing based on stationary spin qubits in coupled quantum dots inside double-sided optical microcavities.

Science.gov (United States)

Wei, Hai-Rui; Deng, Fu-Guo

2014-12-18

Quantum logic gates are the key elements in quantum computing. Here we investigate the possibility of achieving a scalable and compact quantum computing based on stationary electron-spin qubits, by using the giant optical circular birefringence induced by quantum-dot spins in double-sided optical microcavities as a result of cavity quantum electrodynamics. We design the compact quantum circuits for implementing universal and deterministic quantum gates for electron-spin systems, including the two-qubit CNOT gate and the three-qubit Toffoli gate. They are compact and economic, and they do not require additional electron-spin qubits. Moreover, our devices have good scalability and are attractive as they both are based on solid-state quantum systems and the qubits are stationary. They are feasible with the current experimental technology, and both high fidelity and high efficiency can be achieved when the ratio of the side leakage to the cavity decay is low.

Double spin asymmetry in exclusive $\\rho^0$ muoproduction at COMPASS

CERN Document Server

Alexakhin, V Yu; Alexandrov, Yu A; Alexeev, G D; Amoroso, A; Arbuzov, A; Badelek, B; Balestra, F; Ball, J; Baum, G; Barth, J; Bedfer, Y; Bernet, C; Bertini, R; Bettinelli, M; Birsa, R; Bisplinghoff, J; Bordalo, P; Bradamante, Franco; Bravar, A; Bressan, A; Brona, G; Burtin, E; Bussa, M P; Chapiro, A; Chiosso, M; Cicuttin, A; Colantoni, M L; Costa, S; Crespo, M L; D'Hose, N; Dalla Torre, S; Das, S; Das-Gupta, S S; De Masi, R; Dedek, N; Denisov, O Yu; Dhara, L; Díaz, V; Dinkelbach, A M; Donskov, S V; Dorofeev, V A; Doshita, N; Duic, V; Dünnweber, W; Eversheim, P D; Eyrich, W; Fabro, M; Faessler, M; Falaleev, V; Ferrero, A; Ferrero, L; Finger, M; Finger, M Jr; Fischer, H; Franco, C; Franz, J; Friedrich, J M; Frolov, V; Garfagnini, R; Gautheron, F; Gavrichtchouk, O P; Gazda, R; Gerassimov, S G; Geyer, R; Giorgi, M; Gobbo, B; Görtz, S; Gorin, A M; Grabmuller, S; Grajek, O A; Grasso, A; Grube, B; Gushterski, R; Guskov, A; Haas, F; Hannappel, J; Von Harrach, D; Hasegawa, T; Heckmann, J; Hedicke, S; Heinsius, F H; Hermann, R; Hess, C; Hinterberger, F; Von Hodenberg, M; Horikawa, N; Horikawa, S; Ilgner, C; Ioukaev, A I; Ishimoto, S; Ivanov, O; Ivanshin, Yu; Iwata, T; Jahn, R; Janata, A; Jasinski, P; Joosten, R; Jouravlev, N I; Kabuss, E M; Kang, D; Ketzer, B; Khaustov, G V; Khokhlov, Yu A; Kisselev, Yu; Klein, F; Klimaszewski, K; Koblitz, S; Koivuniemi, J H; Kolosov, V N; Komissarov, E V; Kondo, K; Knigsmann, K; Konorov, I; Konstantinov, V F; Korentchenko, A S; Korzenev, A; Kotzinian, A M; Koutchinski, N A; Kuznetsov, O; Kravchuk, N P; Kral, A; Kroumchtein, Z V; Kühn, R; Kunne, Fabienne; Kurek, K; Ladygin, M E; Lamanna, M; Le Goff, J M; Lednev, A A; Lehmann, A; Lichtenstadt, J; Liska, T; Ludwig, I; Maggiora, A; Maggiora, M; Magnon, A; Mallot, G K; Mann, A; Marchand, C; Marroncle, J; Martin, A; Marzec, J; Massmann, F; Matsuda, T; Maksimov, A N; Meyer, W; Mielech, A; Mikhailov, Yu V; Moinester, M A; Mutter, A; Nahle, O; Nagaytsev, A; Nagel, T; Nassalski, J P; Neliba, S; Nerling, F; Neubert, a S; Neyret, D P; Nikolaenko, V I; Nikolaev, K; Olshevskii, A G; Ostrick, M; Padee, A; Pagano, P; Panebianco, S; Panknin, R; Panzieri, D; Paul, S; Pawlukiewicz-Kaminska, B; Peshekhonov, V D; Piragino, G; Platchkov, S; Pochodzalla, J; Polak, J; Polyakov, V A; Pretz, J; Procureur, S; Quintans, C; Rajotte, J F; Rapatsky, V; Ramos, S; Reicherz, G; Richter, A; Robinet, F; Rocco, E; Rondio, E; Rozhdestvensky, A M; Ryabchikov, D I; Samoylenko, V D; Sandacz, A; Santos, H; Sapozhnikov, M G; Sarkar, S; Savin, I A; Schiavon, Paolo; Schill, C; Schmitt, L; Schonmeier, P; Schroder, W; Shevchenko, O Yu; Siebert, H W; Silva, L; Sinha, L; Sissakian, A N; Slunecka, M; Smirnov, G I; Sosio, S; Sozzi, F; Sugonyaev, V P; Srnka, A; Stinzing, F; Stolarski, M; Sulc, M; Sulej, R; Takabayashi, N; Tchalishev, V V; Tessaro, S; Tessarotto, F; Teufel, A; Tkatchev, L G; Venugopal, G; Virius, M; Vlassov, N V; Vossen, A; Webb, R; Weise, E; Weitzel, Q; Windmolders, R; Wirth, S; Wilicki, W; Zaremba, s K; Zavertyaev, M; Zemlyanichkina, E; Zhao, J; Ziegler, R; Zvyagin, A

2007-01-01

The longitudinal double spin asymmetry A_1^rho for exclusive leptoproduction of rho^0 mesons, mu + N -> mu + N + rho, is studied using the COMPASS 2002 and 2003 data. The measured reaction is incoherent exclusive rho^0 production on polarised deuterons. The Q^2 and x dependence of A_1^rho is presented in a wide kinematical range: 3x10^-3 < Q^2 < 7 (GeV/c)^2 and 5x10^-5 < x < 0.05. The presented results are the first measurements of A_1^rho at small Q2 (Q2 < 0.1 (GeV/c)^2) and small x (x < 3x10^-3). The asymmetry is in general compatible with zero in the whole kinematical range.

On the validity of microscopic calculations of double-quantum-dot spin qubits based on Fock-Darwin states

Science.gov (United States)

Chan, GuoXuan; Wang, Xin

2018-04-01

We consider two typical approximations that are used in the microscopic calculations of double-quantum dot spin qubits, namely, the Heitler-London (HL) and the Hund-Mulliken (HM) approximations, which use linear combinations of Fock-Darwin states to approximate the two-electron states under the double-well confinement potential. We compared these results to a case in which the solution to a one-dimensional Schr¨odinger equation was exactly known and found that typical microscopic calculations based on Fock-Darwin states substantially underestimate the value of the exchange interaction, which is the key parameter that controls the quantum dot spin qubits. This underestimation originates from the lack of tunneling of Fock-Darwin states, which is accurate only in the case with a single potential well. Our results suggest that the accuracies of the current two-dimensional molecular- orbit-theoretical calculations based on Fock-Darwin states should be revisited since underestimation could only deteriorate in dimensions that are higher than one.

Method of moments approach to pricing double barrier contracts in polynomial jump-diffusion models

NARCIS (Netherlands)

Eriksson, B.; Pistorius, M.

2011-01-01

Abstract: We present a method of moments approach to pricing double barrier contracts when the underlying is modelled by a polynomial jump-diffusion. By general principles the price is linked to certain infinite dimensional linear programming problems. Subsequently approximating these by finite

Scalable photonic quantum computing assisted by quantum-dot spin in double-sided optical microcavity.

Science.gov (United States)

Wei, Hai-Rui; Deng, Fu-Guo

2013-07-29

We investigate the possibility of achieving scalable photonic quantum computing by the giant optical circular birefringence induced by a quantum-dot spin in a double-sided optical microcavity as a result of cavity quantum electrodynamics. We construct a deterministic controlled-not gate on two photonic qubits by two single-photon input-output processes and the readout on an electron-medium spin confined in an optical resonant microcavity. This idea could be applied to multi-qubit gates on photonic qubits and we give the quantum circuit for a three-photon Toffoli gate. High fidelities and high efficiencies could be achieved when the side leakage to the cavity loss rate is low. It is worth pointing out that our devices work in both the strong and the weak coupling regimes.

Electric detection of the spin-Seebeck effect in magnetic insulator in the presence of interface barrier

International Nuclear Information System (INIS)

Uchida, K; Ota, T; Kajiwara, Y; Saitoh, E; Umezawa, H; Kawai, H

2011-01-01

The spin-Seebeck effect (SSE), the spin-voltage generation as a result of a temperature gradient, has recently been observed in ferrimagnetic insulator LaY 2 Fe 5 O 12 films by means of the inverse spin-Hall effect in Pt films. Here we investigate the SSE using LaY 2 Fe 5 O 12 /SiO 2 (Cu)/Pt systems, where the LaY 2 Fe 5 O 12 and Pt layers are separated by SiO 2 (Cu) thin-film barriers. The experimental results show that the SSE signal disappears in the LaY 2 Fe 5 O 12 /SiO 2 /Pt system, but the finite signal appears in the LaY 2 Fe 5 O 12 /Cu/Pt system, indicating that the direct contacts between the LaY 2 Fe 5 O 12 and normal metals is necessary for generating the SSE signal.

Single-electron regime and Pauli spin blockade in a silicon metal-oxide-semiconductor double quantum dot

Science.gov (United States)

Rochette, Sophie; Ten Eyck, Gregory A.; Pluym, Tammy; Lilly, Michael P.; Carroll, Malcolm S.; Pioro-Ladrière, Michel

2015-03-01

Silicon quantum dots are promising candidates for quantum information processing as spin qubits with long coherence time. We present electrical transport measurements on a silicon metal-oxide-semiconductor (MOS) double quantum dot (DQD). First, Coulomb diamonds measurements demonstrate the one-electron regime at a relatively high temperature of 1.5 K. Then, the 8 mK stability diagram shows Pauli spin blockade with a large singlet-triplet separation of approximatively 0.40 meV, pointing towards a strong lifting of the valley degeneracy. Finally, numerical simulations indicate that by integrating a micro-magnet to those devices, we could achieve fast spin rotations of the order of 30 ns. Those results are part of the recent body of work demonstrating the potential of Si MOS DQD as reliable and long-lived spin qubits that could be ultimately integrated into modern electronic facilities. Sandia National Laboratories is a multi-program laboratory managed and operated by Sandia Corporation, a wholly owned subsidiary of Lockheed Martin Corporation, for the U.S. DOE's National Nuclear Security Administration under Contract DE-AC04-94AL85000.

Comparison of Electron Transmittance and Tunneling Current through a Trapezoidal Potential Barrier with Spin Polarization Consideration by using Analytical and Numerical Approaches

Science.gov (United States)

Nabila, Ezra; Noor, Fatimah A.; Khairurrijal

2017-07-01

In this study, we report an analytical calculation of electron transmittance and polarized tunneling current in a single barrier heterostructure of a metal-GaSb-metal by considering the Dresselhaus spin orbit effect. Exponential function, WKB method and Airy function were used in calculating the electron transmittance and tunneling current. A Transfer Matrix Method, as a numerical method, was utilized as the benchmark to evaluate the analytical calculation. It was found that the transmittances calculated under exponential function and Airy function is the same as that calculated under TMM method at low electron energy. However, at high electron energy only the transmittance calculated under Airy function approach is the same as that calculated under TMM method. It was also shown that the transmittances both of spin-up and spin-down conditions increase as the electron energy increases for low energies. Furthermore, the tunneling current decreases with increasing the barrier width.

DNA with Parallel Strand Orientation: A Nanometer Distance Study with Spin Labels in the Watson-Crick and the Reverse Watson-Crick Double Helix.

Science.gov (United States)

Wunnicke, Dorith; Ding, Ping; Yang, Haozhe; Seela, Frank; Steinhoff, Heinz-Jürgen

2015-10-29

Parallel-stranded (ps) DNA characterized by its sugar-phosphate backbones pointing in the same direction represents an alternative pairing system to antiparallel-stranded (aps) DNA with the potential to inhibit transcription and translation. 25-mer oligonucleotides were selected containing only dA·dT base pairs to compare spin-labeled nucleobase distances over a range of 10 or 15 base pairs in ps DNA with those in aps DNA. By means of the copper(I)-catalyzed Huisgen-Meldal-Sharpless alkyne-azide cycloaddition, the spin label 4-azido-2,2,6,6-tetramethylpiperidine-1-oxyl was clicked to 7-ethynyl-7-deaza-2'-deoxyadenosine or 5-ethynyl-2'-deoxyuridine to yield 25-mer oligonucleotides incorporating two spin labels. The interspin distances between spin labeled residues were determined by pulse EPR spectroscopy. The results reveal that in ps DNA these distances are between 5 and 10% longer than in aps DNA when the labeled DNA segment is located near the center of the double helix. The interspin distance in ps DNA becomes shorter compared with aps DNA when one of the spin labels occupies a position near the end of the double helix.

Spin current and spin transfer torque in ferromagnet/superconductor spin valves

Science.gov (United States)

Moen, Evan; Valls, Oriol T.

2018-05-01

Using fully self-consistent methods, we study spin transport in fabricable spin valve systems consisting of two magnetic layers, a superconducting layer, and a spacer normal layer between the ferromagnets. Our methods ensure that the proper relations between spin current gradients and spin transfer torques are satisfied. We present results as a function of geometrical parameters, interfacial barrier values, misalignment angle between the ferromagnets, and bias voltage. Our main results are for the spin current and spin accumulation as functions of position within the spin valve structure. We see precession of the spin current about the exchange fields within the ferromagnets, and penetration of the spin current into the superconductor for biases greater than the critical bias, defined in the text. The spin accumulation exhibits oscillating behavior in the normal metal, with a strong dependence on the physical parameters both as to the structure and formation of the peaks. We also study the bias dependence of the spatially averaged spin transfer torque and spin accumulation. We examine the critical-bias effect of these quantities, and their dependence on the physical parameters. Our results are predictive of the outcome of future experiments, as they take into account imperfect interfaces and a realistic geometry.

Dresselhaus spin-orbit coupling induced spin-polarization and resonance-split in n-well semiconductor superlattices

International Nuclear Information System (INIS)

Ye Chengzhi; Xue Rui; Nie, Y.-H.; Liang, J.-Q.

2009-01-01

Using the transfer matrix method, we investigate the electron transmission over multiple-well semiconductor superlattices with Dresselhaus spin-orbit coupling in the potential-well regions. The superlattice structure enhances the effect of spin polarization in the transmission spectrum. The minibands of multiple-well superlattices for electrons with different spin can be completely separated at the low incident energy, leading to the 100% spin polarization in a broad energy windows, which may be an effective scheme for realizing spin filtering. Moreover, for the transmission over n-quantum-well, it is observed that the resonance peaks in the minibands split into n-folds or (n-1)-folds depending on the well-width and barrier-thickness, which is different from the case of tunneling through n-barrier structure

Holography and higher-spin theories

International Nuclear Information System (INIS)

Petkou, T.

2005-01-01

I review recent work on the holographic relation between higher-spin theories in Anti-de Sitter spaces and conformal field theories. I present the main results of studies concerning the higher-spin holographic dual of the three-dimensional O(N) vector model. I discuss the special role played by certain double-trace deformations in Conformal Field Theories that have higher-spin holographic duals. Moreover, I show that duality transformations in a U(1) gauge theory on AdS 4 induce boundary double-trace deformations and argue that a similar effect takes place in the holography of linearized higher-spin theories on AdS 4 . (Abstract Copyright [2005], Wiley Periodicals, Inc.)

Full counting statistics in a serially coupled double quantum dot system with spin-orbit coupling

Science.gov (United States)

Wang, Qiang; Xue, Hai-Bin; Xie, Hai-Qing

2018-04-01

We study the full counting statistics of electron transport through a serially coupled double quantum dot (QD) system with spin-orbit coupling (SOC) weakly coupled to two electrodes. We demonstrate that the spin polarizations of the source and drain electrodes determine whether the shot noise maintains super-Poissonian distribution, and whether the sign transitions of the skewness from positive to negative values and of the kurtosis from negative to positive values take place. In particular, the interplay between the spin polarizations of the source and drain electrodes and the magnitude of the external magnetic field, can give rise to a gate-voltage-tunable strong negative differential conductance (NDC) and the shot noise in this NDC region is significantly enhanced. Importantly, for a given SOC parameter, the obvious variation of the high-order current cumulants as a function of the energy-level detuning in a certain range, especially the dip position of the Fano factor of the skewness can be used to qualitatively extract the information about the magnitude of the SOC.

Review of underground logistic systems in the Netherlands : An ex-post evaluation of barriers, enablers and spin-offs

NARCIS (Netherlands)

Wiegmans, B.W.; Visser, J.; Konings, R.; Pielage, B.J.A.

2010-01-01

Now, 10 years after the first plans, we analyse in this paper what has happened with Underground Logistic Systems (ULS). The major question in this paper is: Which barriers and enablers led to the failure of ULS and what ULS spin-offs can be found nowadays? Several factors can be classified as

Transverse spin effects

International Nuclear Information System (INIS)

Ratcliffe, P.G.

1993-01-01

A discussion is presented of the role that transverse spin physics can play in providing information on the bound state dynamics in hadronic physics. Care is taken to distinguish between single- and double-spin measurements, each being discussed separately. In the case of single-spin effects it is stressed that as yet no satisfactory explanation has been provided within the framework if perturbative QCD which in fact generally predicts negligible effects. In order to clarify the situation experimental data at yet higher p T are necessary and semi-leptonic data could shed some light on the underlying scattering mechanisms. As regards double-spin correlations, the theoretical picture (although clouded by some ill-informed, often erroneous statements and even recent papers) is rather well understood and what is dearly missing is the experimental study of, for example, g 2 in deep-inelastic scattering. (author). 31 refs

Spin Relaxation and Manipulation in Spin-orbit Qubits

Science.gov (United States)

Borhani, Massoud; Hu, Xuedong

2012-02-01

We derive a generalized form of the Electric Dipole Spin Resonance (EDSR) Hamiltonian in the presence of the spin-orbit interaction for single spins in an elliptic quantum dot (QD) subject to an arbitrary (in both direction and magnitude) applied magnetic field. We predict a nonlinear behavior of the Rabi frequency as a function of the magnetic field for sufficiently large Zeeman energies, and present a microscopic expression for the anisotropic electron g-tensor. Similarly, an EDSR Hamiltonian is devised for two spins confined in a double quantum dot (DQD). Finally, we calculate two-electron-spin relaxation rates due to phonon emission, for both in-plane and perpendicular magnetic fields. Our results have immediate applications to current EDSR experiments on nanowire QDs, g-factor optimization of confined carriers, and spin decay measurements in DQD spin-orbit qubits.

Tunneling spin injection into single layer graphene.

Science.gov (United States)

Han, Wei; Pi, K; McCreary, K M; Li, Yan; Wong, Jared J I; Swartz, A G; Kawakami, R K

2010-10-15

We achieve tunneling spin injection from Co into single layer graphene (SLG) using TiO₂ seeded MgO barriers. A nonlocal magnetoresistance (ΔR(NL)) of 130  Ω is observed at room temperature, which is the largest value observed in any material. Investigating ΔR(NL) vs SLG conductivity from the transparent to the tunneling contact regimes demonstrates the contrasting behaviors predicted by the drift-diffusion theory of spin transport. Furthermore, tunnel barriers reduce the contact-induced spin relaxation and are therefore important for future investigations of spin relaxation in graphene.

Gate tunable spin transport in graphene with Rashba spin-orbit coupling

Science.gov (United States)

Tan, Xiao-Dong; Liao, Xiao-Ping; Sun, Litao

2016-10-01

Recently, it attracts much attention to study spin-resolved transport properties in graphene with Rashba spin-orbit coupling (RSOC). One remarkable finding is that Klein tunneling in single layer graphene (SLG) with RSOC (SLG + R for short below) behaves as in bi-layer graphene (BLG). Based on the effective Dirac theory, we reconsider this tunneling problem and derive the analytical solution for the transmission coefficients. Our result shows that Klein tunneling in SLG + R and BLG exhibits completely different behaviors. More importantly, we find two new transmission selection rules in SLG + R, i.e., the single band to single band (S → S) and the single band to multiple bands (S → M) transmission regimes, which strongly depend on the relative height among Fermi level, RSOC, and potential barrier. Interestingly, in the S → S transmission regime, only normally incident electrons have capacity to pass through the barrier, while in the S → M transmission regime the angle-dependent tunneling becomes very prominent. Using the transmission coefficients, we also derive spin-resolved conductance analytically, and conductance oscillation with the increasing barrier height and zero conductance gap are found in SLG + R. The present study offers new insights and opportunities for developing graphene-based spin devices.

Strong spin-photon coupling in silicon

Science.gov (United States)

Samkharadze, N.; Zheng, G.; Kalhor, N.; Brousse, D.; Sammak, A.; Mendes, U. C.; Blais, A.; Scappucci, G.; Vandersypen, L. M. K.

2018-03-01

Long coherence times of single spins in silicon quantum dots make these systems highly attractive for quantum computation, but how to scale up spin qubit systems remains an open question. As a first step to address this issue, we demonstrate the strong coupling of a single electron spin and a single microwave photon. The electron spin is trapped in a silicon double quantum dot, and the microwave photon is stored in an on-chip high-impedance superconducting resonator. The electric field component of the cavity photon couples directly to the charge dipole of the electron in the double dot, and indirectly to the electron spin, through a strong local magnetic field gradient from a nearby micromagnet. Our results provide a route to realizing large networks of quantum dot–based spin qubit registers.

Output voltage calculations in double barrier magnetic tunnel junctions with asymmetric voltage behavior

KAUST Repository

Useinov, Arthur

2011-10-22

In this paper we study the asymmetric voltage behavior (AVB) of the tunnel magnetoresistance (TMR) for single and double barrier magnetic tunnel junctions (MTJs) in range of a quasi-classical free electron model. Numerical calculations of the TMR-V curves, output voltages and I-V characteristics for negative and positive values of applied voltages were carried out using MTJs with CoFeB/MgO interfaces as an example. Asymmetry of the experimental TMR-V curves is explained by different values of the minority and majority Fermi wave vectors for the left and right sides of the tunnel barrier, which arises due to different annealing regimes. Electron tunneling in DMTJs was simulated in two ways: (i) Coherent tunneling, where the DMTJ is modeled as one tunnel system and (ii) consecutive tunneling, where the DMTJ is modeled by two single barrier junctions connected in series. © 2012 Elsevier B.V. All rights reserved.

Large-scale fabrication of BN tunnel barriers for graphene spintronics

International Nuclear Information System (INIS)

Fu, Wangyang; Makk, Péter; Maurand, Romain; Bräuninger, Matthias; Schönenberger, Christian

2014-01-01

We have fabricated graphene spin-valve devices utilizing scalable materials made from chemical vapor deposition (CVD). Both the spin-transporting graphene and the tunnel barrier material are CVD-grown. The tunnel barrier is realized by Hexagonal boron nitride, used either as a monolayer or bilayer and placed over the graphene. Spin transport experiments were performed using ferromagnetic contacts deposited onto the barrier. We find that spin injection is still greatly suppressed in devices with a monolayer tunneling barrier due to resistance mismatch. This is, however, not the case for devices with bilayer barriers. For those devices, a spin relaxation time of ∼260 ps intrinsic to the CVD graphene material is deduced. This time scale is comparable to those reported for exfoliated graphene, suggesting that this CVD approach is promising for spintronic applications which require scalable materials

Increasing the number of spin-outs from Danish universities

DEFF Research Database (Denmark)

Andersen, Lars-Ulrik Aaen

2011-01-01

In this paper I describe some of the barriers and motivations involved in the process of creating spin-out companies from Danish universities – based on a study carried out at the Technical University of Denmark (DTU). Even if procedures are established to support the spin-out process...... in the spin-out process the study reveals some of the barriers of the employees at the universities but also the other stakeholders view on the process. The investigation also reveals the various motivations for starting up a spin-out company and input to what the university/department can do to facilitate......, there are still barriers that hinder the process. In this paper I investigate these barriers and the possible motivations that could increase the number of spin-outs. I also discuss some of the processes and tools that could be implemented to support the process. Based on interviews with a number of stakeholders...

PREFACE: Spin Electronics

Science.gov (United States)

Dieny, B.; Sousa, R.; Prejbeanu, L.

2007-04-01

Conventional electronics has in the past ignored the spin on the electron, however things began to change in 1988 with the discovery of giant magnetoresistance in metallic thin film stacks which led to the development of a new research area, so called spin-electronics. In the last 10 years, spin-electronics has achieved a number of breakthroughs from the point of view of both basic science and application. Materials research has led to several major discoveries: very large tunnel magnetoresistance effects in tunnel junctions with crystalline barriers due to a new spin-filtering mechanism associated with the spin-dependent symmetry of the electron wave functions new magnetic tunnelling barriers leading to spin-dependent tunnelling barrier heights and acting as spin-filters magnetic semiconductors with increasingly high ordering temperature. New phenomena have been predicted and observed: the possibility of acting on the magnetization of a magnetic nanostructure with a spin-polarized current. This effect, due to a transfer of angular momentum between the spin polarized conduction electrons and the local magnetization, can be viewed as the reciprocal of giant or tunnel magnetoresistance. It can be used to switch the magnetization of a magnetic nanostructure or to generate steady magnetic excitations in the system. the possibility of generating and manipulating spin current without charge current by creating non-equilibrium local accumulation of spin up or spin down electrons. The range of applications of spin electronics materials and phenomena is expanding: the first devices based on giant magnetoresistance were the magnetoresistive read-heads for computer disk drives. These heads, introduced in 1998 with current-in plane spin-valves, have evolved towards low resistance tunnel magnetoresistice heads in 2005. Besides magnetic recording technology, these very sensitive magnetoresistive sensors are finding applications in other areas, in particular in biology. magnetic

Longitudinal double-spin asymmetry for inclusive jet production in p+p collisions at √ps=200 GeV

NARCIS (Netherlands)

Abelev, B.I.; Bai, Y.; Benedosso, F.; Botje, M.A.J.; Grebenyuk, O.; Mischke, A.; Peitzmann, T.; Russcher, M.J.; Snellings, R.J.M.; van der Kolk, N.

2008-01-01

We report a new STAR measurement of the longitudinal double-spin asymmetry A_LL for inclusive jet production at mid-rapidity in polarized p+p collisions at a center-of-mass energy of sqrt(s) = 200 GeV. The data, which cover jet transverse momenta 5

Spin manipulation and relaxation in spin-orbit qubits

Science.gov (United States)

Borhani, Massoud; Hu, Xuedong

2012-03-01

We derive a generalized form of the electric dipole spin resonance (EDSR) Hamiltonian in the presence of the spin-orbit interaction for single spins in an elliptic quantum dot (QD) subject to an arbitrary (in both direction and magnitude) applied magnetic field. We predict a nonlinear behavior of the Rabi frequency as a function of the magnetic field for sufficiently large Zeeman energies, and present a microscopic expression for the anisotropic electron g tensor. Similarly, an EDSR Hamiltonian is devised for two spins confined in a double quantum dot (DQD), where coherent Rabi oscillations between the singlet and triplet states are induced by jittering the inter-dot distance at the resonance frequency. Finally, we calculate two-electron-spin relaxation rates due to phonon emission, for both in-plane and perpendicular magnetic fields. Our results have immediate applications to current EDSR experiments on nanowire QDs, g-factor optimization of confined carriers, and spin decay measurements in DQD spin-orbit qubits.

Tunneling Anomalous and Spin Hall Effects.

Science.gov (United States)

Matos-Abiague, A; Fabian, J

2015-07-31

We predict, theoretically, the existence of the anomalous Hall effect when a tunneling current flows through a tunnel junction in which only one of the electrodes is magnetic. The interfacial spin-orbit coupling present in the barrier region induces a spin-dependent momentum filtering in the directions perpendicular to the tunneling current, resulting in a skew tunneling even in the absence of impurities. This produces an anomalous Hall conductance and spin Hall currents in the nonmagnetic electrode when a bias voltage is applied across the tunneling heterojunction. If the barrier is composed of a noncentrosymmetric material, the anomalous Hall conductance and spin Hall currents become anisotropic with respect to both the magnetization and crystallographic directions, allowing us to separate this interfacial phenomenon from the bulk anomalous and spin Hall contributions. The proposed effect should be useful for proving and quantifying the interfacial spin-orbit fields in metallic and metal-semiconductor systems.

Measurement of the Double Spin Asymmetry in π+ electroproduction with CLAS

International Nuclear Information System (INIS)

Raffaella De Vita

2000-01-01

The present thesis describes the measurement of the double spin asymmetry in the ep → eπ + n reaction. This represents the only existing measurement for this observable. The reaction is identified detecting the scattered electron and the emitted pion and using the missing mass technique to identify the neutron. The asymmetry is evaluated as a function of the four-momentum transfer Q 2 , the invariant mass W and the pion center of mass angle θ*. These are in fact the variables that determine the transition amplitudes for the process. The W range of this measurement varies from the pion threshold to a maximum value of 1.8 GeV, exploring the full resonance region. The results obtained with this analysis in the evaluation of the spin asymmetry are presented. The outline of the thesis can be summarized as follows. The first chapter describes the physics motivation that are at the basis of this experiment. The second and third chapters illustrate the design of the CLAS detector and the polarized target. The fourth chapter gives a description of the event reconstruction and to the event selection while the analysis procedure is described in chapter five. Chapter six discusses the results of this measurement, including the evaluation of the systematic uncertainty and the comparison with a physics model

Efficient dipolar double quantum filtering under magic angle spinning without a (1)H decoupling field.

Science.gov (United States)

Courtney, Joseph M; Rienstra, Chad M

2016-08-01

We present a systematic study of dipolar double quantum (DQ) filtering in (13)C-labeled organic solids over a range of magic-angle spinning rates, using the SPC-n recoupling sequence element with a range of n symmetry values from 3 to 11. We find that efficient recoupling can be achieved for values n⩾7, provided that the (13)C nutation frequency is on the order of 100kHz or greater. The decoupling-field dependence was investigated and explicit heteronuclear decoupling interference conditions identified. The major determinant of DQ filtering efficiency is the decoupling interference between (13)C and (1)H fields. For (13)C nutation frequencies greater than 75kHz, optimal performance is observed without an applied (1)H field. At spinning rates exceeding 20kHz, symmetry conditions as low as n=3 were found to perform adequately. Copyright © 2016 Elsevier Inc. All rights reserved.

New materials research for high spin polarized current

International Nuclear Information System (INIS)

Tezuka, Nobuki

2012-01-01

The author reports here a thorough investigation of structural and magnetic properties of Co 2 FeAl 0.5 Si 0.5 Heusler alloy films, and the tunnel magnetoresistance effect for junctions with Co 2 FeAl 0.5 Si 0.5 electrodes, spin injection into GaAs semiconductor from Co 2 FeAl 0.5 Si 0.5 , and spin filtering phenomena for junctions with CoFe 2 O 4 ferrite barrier. It was observed that tunnel magnetoresistance ratio up to 832%(386%) at 9 K (room temperature), which corresponds to the tunnel spin polarization of 0.90 (0.81) for the junctions using Co 2 FeAl 0.5 Si 0.5 Heusler electrodes by optimizing the fabrication condition. It was also found that the tunnel magnetoresistance ratio are almost the same between the junctions with Co 2 FeAl 0.5 Si 0.5 Heusler electrodes on Cr buffered (1 0 0) and (1 1 0) MgO substrates, which indicates that tunnel spin polarization of Co 2 FeAl 0.5 Si 0.5 for these two direction are almost the same. The next part of this paper is a spin filtering effect using a Co ferrite. The spin filtering effect was observed through a thin Co-ferrite barrier. The inverse type tunnel magnetoresistance ratio of −124% measured at 10 K was obtained. The inverse type magnetoresistance suggests the negative spin polarization of Co-ferrite barrier. The magnetoresistance ratio of −124% corresponds to the spin polarization of −0.77 by the Co-ferrite barrier. The last part is devoted to the spin injection from Co 2 FeAl 0.5 Si 0.5 into GaAs. The spin injection signal was clearly obtained by three terminal Hanle measurement. The spin relaxation time was estimated to be 380 ps measured at 5 K.

Collective spin correlations and entangled state dynamics in coupled quantum dots

Science.gov (United States)

Maslova, N. S.; Arseyev, P. I.; Mantsevich, V. N.

2018-02-01

Here we demonstrate that the dynamics of few-electron states in a correlated quantum-dot system coupled to an electronic reservoir is governed by the symmetry properties of the total system leading to the collective behavior of all the electrons. Time evolution of two-electron states in a correlated double quantum dot after coupling to the reservoir has been analyzed by means of kinetic equations for pseudoparticle occupation numbers with constraint on possible physical states. It was revealed that the absolute value of the spin correlation function and the degree of entanglement for two-electron states could considerably increase after coupling to the reservoir. The obtained results demonstrate the possibility of a controllable tuning of both the spin correlation function and the concurrence value in a coupled quantum-dot system by changing of the gate voltage applied to the barrier separating the dots.

Multinuclear solid-state high-resolution and C-13 -{Al-27} double-resonance magic-angle spinning NMR studies on aluminum alkoxides

NARCIS (Netherlands)

Abraham, A.; Prins, R.; Bokhoven, J.A. van; Eck, E.R.H. van; Kentgens, A.P.M.

2006-01-01

A combination of Al-27 magic-angle spinning (MAS)/multiple quantum (MQ)-MAS, C-13-H-1 CPMAS, and C-13-{Al-27} transfer of population in double-resonance (TRAPDOR) nuclear magnetic resonance (NMR) were used for the structural elucidation of the aluminum alkoxides aluminum ethoxide, aluminum

Tunable spin-tunnel contacts to silicon using low-work-function ferromagnets

Science.gov (United States)

Min, Byoung-Chul; Motohashi, Kazunari; Lodder, Cock; Jansen, Ron

2006-10-01

Magnetic tunnel junctions have become ubiquitous components appearing in magnetic random-access memory, read heads of magnetic disk drives and semiconductor-based spin devices. Inserting a tunnel barrier has been key to achieving spin injection from ferromagnetic (FM) metals into GaAs, but spin injection into Si has remained elusive. We show that Schottky barrier formation leads to a huge conductivity mismatch of the FM tunnel contact and Si, which cannot be solved by the well-known method of adjusting the tunnel barrier thickness. We present a radically different approach for spin-tunnelling resistance control using low-work-function ferromagnets, inserted at the FM/tunnel barrier interface. We demonstrate that in this way the resistance-area (RA) product of FM/Al2O3/Si contacts can be tuned over eight orders of magnitude, while simultaneously maintaining a reasonable tunnel spin polarization. This raises prospects for Si-based spintronics and presents a new category of ferromagnetic materials for spin-tunnel contacts in low-RA-product applications.

Anomalous Tunnel Magnetoresistance and Spin Transfer Torque in Magnetic Tunnel Junctions with Embedded Nanoparticles

Science.gov (United States)

Useinov, Arthur; Ye, Lin-Xiu; Useinov, Niazbeck; Wu, Te-Ho; Lai, Chih-Huang

2015-01-01

The tunnel magnetoresistance (TMR) in the magnetic tunnel junction (MTJ) with embedded nanoparticles (NPs) was calculated in range of the quantum-ballistic model. The simulation was performed for electron tunneling through the insulating layer with embedded magnetic and non-magnetic NPs within the approach of the double barrier subsystem connected in parallel to the single barrier one. This model can be applied for both MTJs with in-plane magnetization and perpendicular one. We also calculated the in-plane component of the spin transfer torque (STT) versus the applied voltage in MTJs with magnetic NPs and determined that its value can be much larger than in single barrier system (SBS) for the same tunneling thickness. The reported simulation reproduces experimental data of the TMR suppression and peak-like TMR anomalies at low voltages available in leterature. PMID:26681336

Dynamics of spin-flip photon-assisted tunneling

NARCIS (Netherlands)

Braakman, F.R.; Danon, J.; Schreiber, L.R.; Wegscheider, W.; Vandersypen, L.M.K.

2014-01-01

We present time-resolved measurements of spin-flip photon-assisted tunneling and spin-flip relaxation in a doubly occupied double quantum dot. The photon-assisted excitation rate as a function of magnetic field indicates that spin-orbit coupling is the dominant mechanism behind the spin-flip under

Study of the Wigner function at the device boundaries in one-dimensional single- and double-barrier structures

International Nuclear Information System (INIS)

Savio, Andrea; Poncet, Alain

2011-01-01

In this work, we compute the Wigner distribution function on one-dimensional devices from wave functions generated by solving the Schroedinger equation. Our goal is to investigate certain issues that we encountered in implementing Wigner transport equation solvers, such as the large discrepancies observed between the boundary conditions and the solution in the neighborhood of the boundaries. By evaluating the Wigner function without solving the Wigner transport equation, we intend to ensure that the actual boundary conditions are consistent with those commonly applied in literature. We study both single- and double-barrier unbiased structures. We use simple potential profiles, so that we can compute the wave functions analytically for better accuracy. We vary a number of structure geometry, material, meshing, and numerical parameters, among which are the contact length, the barrier height, the number of incident wave functions, and the numerical precision used for the computations, and we observe how the Wigner function at the device boundaries is affected. For the double-barrier structures, we look at the density matrix function and we study a model for the device transmission spectrum which helps explain the lobelike artifacts that we observe on the Wigner function.

Spin-photon entangling diode

DEFF Research Database (Denmark)

Flindt, Christian; Sørensen, A. S.; Lukin, M. D.

2007-01-01

We propose a semiconductor device that can electrically generate entangled electron spin-photon states, providing a building block for entanglement of distant spins. The device consists of a p-i-n diode structure that incorporates a coupled double quantum dot. We show that electronic control of t...

Waiting time distribution revealing the internal spin dynamics in a double quantum dot

Science.gov (United States)

Ptaszyński, Krzysztof

2017-07-01

Waiting time distribution and the zero-frequency full counting statistics of unidirectional electron transport through a double quantum dot molecule attached to spin-polarized leads are analyzed using the quantum master equation. The waiting time distribution exhibits a nontrivial dependence on the value of the exchange coupling between the dots and the gradient of the applied magnetic field, which reveals the oscillations between the spin states of the molecule. The zero-frequency full counting statistics, on the other hand, is independent of the aforementioned quantities, thus giving no insight into the internal dynamics. The fact that the waiting time distribution and the zero-frequency full counting statistics give a nonequivalent information is associated with two factors. Firstly, it can be explained by the sensitivity to different timescales of the dynamics of the system. Secondly, it is associated with the presence of the correlation between subsequent waiting times, which makes the renewal theory, relating the full counting statistics and the waiting time distribution, no longer applicable. The study highlights the particular usefulness of the waiting time distribution for the analysis of the internal dynamics of mesoscopic systems.

Transport properties of Dirac electrons in graphene based double velocity-barrier structures in electric and magnetic fields

International Nuclear Information System (INIS)

Liu, Lei; Li, Yu-Xian; Liu, Jian-Jun

2012-01-01

Using transfer matrix method, transport properties in graphene based double velocity-barrier structures under magnetic and electric fields are numerically studied. It is found that velocity barriers for the velocity ratio (the Fermi velocity inside the barrier to that outside the barrier) less than one (or for the velocity ratio greater than one) have properties similar to electrostatic wells (or barriers). The velocity barriers for the velocity ratio greater than one significantly enlarge the resonant tunneling region of electrostatic barriers. In the presence of magnetic field, the plateau width of the Fano factor with a Poissonian value shortens (or broadens) for the case of the velocity ratio less than one (or greater than one). When the Fermi energy is equal to the electrostatic barrier height, for different values of the velocity ratio, both the conductivities and the Fano factors remain fixed. -- Highlights: ► We model graphene based velocity-barrier structures in electric and magnetic fields. ► Velocity barrier for ξ 1) have property similar to electrostatic well (barrier). ► Velocity barrier for ξ>1 enlarge the resonant tunneling region of electrostatic barrier. ► The plateau width of Fano factor shortens (or broadens) for the case of ξ 1). ► The conductivity remains fixed at the point of E F =U 0 for different values of ξ.

arXiv Longitudinal double-spin asymmetry $A_1^{\\rm p}$ and spin-dependent structure function $g_1^{\\rm p}$ of the proton at small values of $x$ and $Q^2$

CERN Document Server

Aghasyan, M.; The COMPASS collaboration; Alexeev, G.D.; Amoroso, A.; Andrieux, V.; Anfimov, N.V.; Anosov, V.; Antoshkin, A.; Augsten, K.; Augustyniak, W.; Austregesilo, A.; Azevedo, C.D.R.; Badełek, B.; Balestra, F.; Ball, M.; Barth, J.; Beck, R.; Bedfer, Y.; Bernhard, J.; Bicker, K.; Bielert, E.R.; Birsa, R.; Bodlak, M.; Bordalo, P.; Bradamante, F.; Bressan, A.; Büchele, M.; Burtsev, V.E.; Chang, W.-C.; Chatterjee, C.; Chiosso, M.; Choi, I.; Chumakov, A.G.; Chung, S.-U.; Cicuttin, A.; Crespo, M.L.; Dalla Torre, S.; Dasgupta, S.S.; Dasgupta, S.; Denisov, O.Yu.; Dhara, L.; Donskov, S.V.; Doshita, N.; Dreisbach, Ch.; Dünnweber, W.; Dusaev, R.R.; Dziewiecki, M.; Efremov, A.; Eversheim, P.D.; Faessler, M.; Ferrero, A.; Finger, M.; jr.,M.Finger; Fischer, H.; Franco, C.; du Fresne von Hohenesche, N.; Friedrich, J.M.; Frolov, V.; Fuchey, E.; Gautheron, F.; Gavrichtchouk, O.P.; Gerassimov, S.; Giarra, J.; Giordano, F.; Gnesi, I.; Gorzellik, M.; Grasso, A.; Gridin, A.; Grosse Perdekamp, M.; Grube, B.; Grussenmeyer, T.; Guskov, A.; Hahne, D.; Hamar, G.; von Harrach, D.; Heinsius, F.H.; Heitz, R.; Herrmann, F.; Horikawa, N.; d'Hose, N.; Hsieh, C.-Y.; Huber, S.; Ishimoto, S.; Ivanov, A.; Iwata, T.; Jary, V.; Joosten, R.; Jörg, P.; Kabuß, E.; Kerbizi, A.; Ketzer, B.; Khaustov, G.V.; Khokhlov, Yu.A.; Kisselev, Yu.; Klein, F.; Koivuniemi, J.H.; Kolosov, V.N.; Kondo, K.; Königsmann, K.; Konorov, I.; Konstantinov, V.F.; Kotzinian, A.M.; Kouznetsov, O.M.; Kral, Z.; Krämer, M.; Kremser, P.; Krinner, F.; Kroumchtein, Z.V.; Kulinich, Y.; Kunne, F.; Kurek, K.; Kurjata, R.P.; Kuznetsov, I.I.; Kveton, A.; Lednev, A.A.; Levchenko, E.A.; Levillain, M.; Levorato, S.; Lian, Y.-S.; Lichtenstadt, J.; Longo, R.; Lyubovitskij, V.E.; Maggiora, A.; Magnon, A.; Makins, N.; Makke, N.; Mallot, G.K.; Mamon, S.A.; Marianski, B.; Martin, A.; Marzec, J.; Matoušek, J.; Matsuda, H.; Matsuda, T.; Meshcheryakov, G.V.; Meyer, M.; Meyer, W.; Mikhailov, Yu.V.; Mikhasenko, M.; Mitrofanov, E.; Mitrofanov, N.; Miyachi, Y.; Moretti, A.; Nagaytsev, A.; Nerling, F.; Neyret, D.; Nový, J.; Nowak, W.-D.; Nukazuka, G.; Nunes, A.S.; Olshevsky, A.G.; Orlov, I.; Ostrick, M.; Panzieri, D.; Parsamyan, B.; Paul, S.; Peng, J.-C.; Pereira, F.; Pešek, M.; Pešková, M.; Peshekhonov, D.V.; Pierre, N.; Platchkov, S.; Pochodzalla, J.; Polyakov, V.A.; Pretz, J.; Quaresma, M.; Quintans, C.; Ramos, S.; Regali, C.; Reicherz, G.; Riedl, C.; Rogacheva, N.S.; Ryabchikov, D.I.; Rybnikov, A.; Rychter, A.; Salac, R.; Samoylenko, V.D.; Sandacz, A.; Santos, C.; Sarkar, S.; Savin, I.A.; Sawada, T.; Sbrizzai, G.; Schiavon, P.; Schmidt, K.; Schmieden, H.; Schönning, K.; Seder, E.; Selyunin, A.; Silva, L.; Sinha, L.; Sirtl, S.; Slunecka, M.; Smolik, J.; Srnka, A.; Steffen, D.; Stolarski, M.; Subrt, O.; Sulc, M.; Suzuki, H.; Szabelski, A.; Szameitat, T.; Sznajder, P.; Tasevsky, M.; Tessaro, S.; Tessarotto, F.; Thiel, A.; Tomsa, J.; Tosello, F.; Tskhay, V.; Uhl, S.; Vasilishin, B.I.; Vauth, A.; Veloso, J.; Vidon, A.; Virius, M.; Wallner, S.; Weisrock, T.; Wilfert, M.; ter Wolbeek, J.; Zaremba, K.; Zavada, P.; Zavertyaev, M.; Zemlyanichkina, E.; Ziembicki, M.

2018-06-10

We present a precise measurement of the proton longitudinal double-spin asymmetry A1p and the proton spin-dependent structure function g1p at photon virtualities 0.006(GeV/c)2spin effects are found at such low values of x .

Spin-four N=7 W-Supergravity: S-fold and Double Copy Construction arXiv

CERN Document Server

Ferrara, Sergio

In the present investigation we consider the possibility of having new massive, higher spin W-supergravity theories, which do not exist as four-dimensional perturbative models. These theories are based on a double copy construction of two supersymmetric field theories, where at least one factor is given by a N=3 field theory, which is a non-perturbative S-fold of N=4 super Yang-Mills theory. In this way, we can obtain as S-folds a new N=7 (corresponding to 28 supercharges) W-supergravity and its N=7 W-superstring counterpart, which both do not exist as four-dimensional perturbative models with an (effective) Langrangian description. The resulting field resp. string theory does not contain any massless states, but instead a massive higher spin-four supermultiplet of the N=7 supersymmetry algebra. Furthermore we also construct a four-dimensional heterotic S-fold with N=3 supersymmetry. It again does not exist as perturbative heterotic string model and can be considered as the heterotic counterpart of the N=3 su...

Spin information from vector-meson decay in photoproduction

International Nuclear Information System (INIS)

Kloet, W.M.; Chiang, W.; Tabakin, F.

1998-01-01

For the photoproduction of vector mesons, all single and double spin observables involving vector-meson two-body decays are defined consistently in the γN center-of-mass frame. These definitions yield a procedure for extracting physically meaningful single and double spin observables that are subject to known rules concerning their angle and energy evolution. As part of this analysis, we show that measuring the two-meson decay of a photo produced ρ or φ does not determine the vector meson's vector polarization, but only its tensor polarization. The vector meson decay into lepton pairs is also insensitive to the vector meson's vector polarization, unless one measures the spin of one of the leptons. Similar results are found for all double spin observables which involve observation of vector-meson decay. To access the vector meson's vector polarization, one therefore needs to either measure the spin of the decay leptons, make an analysis of the background interference effects, or relate the vector meson's vector polarization to other accessible spin observables. copyright 1998 The American Physical Society

Inverse spin-valve effect in nanoscale Si-based spin-valve devices

Science.gov (United States)

Hiep, Duong Dinh; Tanaka, Masaaki; Hai, Pham Nam

2017-12-01

We investigated the spin-valve effect in nano-scale silicon (Si)-based spin-valve devices using a Fe/MgO/Ge spin injector/detector deposited on Si by molecular beam epitaxy. For a device with a 20 nm Si channel, we observed clear magnetoresistance up to 3% at low temperature when a magnetic field was applied in the film plane along the Si channel transport direction. A large spin-dependent output voltage of 20 mV was observed at a bias voltage of 0.9 V at 15 K, which is among the highest values in lateral spin-valve devices reported so far. Furthermore, we observed that the sign of the spin-valve effect is reversed at low temperatures, suggesting the possibility of a spin-blockade effect of defect states in the MgO/Ge tunneling barrier.

Double-spin asymmetry of J/ψ production in polarized pp-collisions at HERA-N-vector polarized

International Nuclear Information System (INIS)

Teryaev, O.; Tkabladze, A.

1996-01-01

We calculated the color-octet contribution to the double spin asymmetry of J/ψ hadroproduction with nonzero transverse momenta at fixed target energies √ s ≅ 40 GeV. It is shown that color-octet contribution is dominant in the asymmetries. The expected asymmetries and statistical errors in a future option of HERA with longitudinally polarized protons at √ s = 39 GeV (HERA-N polarized) should allow one to distinguish between different parametrizations for polarized gluon distribution in proton

Shapes of tree representations of spin-glass landscapes

International Nuclear Information System (INIS)

Hordijk, Wim; Fontanari, Jose F; Stadler, Peter F

2003-01-01

Much of the information about the multi-valley structure of disordered spin systems can be convened in a simple tree structure - a barrier tree - the leaves and internal nodes of which represent, respectively, the local minima and the lowest energy saddles connecting those minima. Here we apply several statistics used in the study of phylogenetic trees to barrier trees that result from the energy landscapes of p-spin models. These statistics give information about the shape of these barrier trees, in particular about balance and symmetry. We then ask if they can be used to classify different types of landscapes, compare them with results obtained from random trees, and investigate the structure of subtrees of the barrier trees. We conclude that at least one of the used statistics is capable of distinguishing different types of landscapes, that the barrier trees from p-spin energy landscapes are quite different from random trees, and that subtrees of barrier trees do not reflect the overall tree structure, but their structure is correlated with their 'depth' in the tree

Thermal barrier coatings with a double-layer bond coat on Ni{sub 3}Al based single-crystal superalloy

Energy Technology Data Exchange (ETDEWEB)

Zhou, Xin [State Key Laboratory of Rare Earth Resource Utilization, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun 130022 (China); University of Chinese Academy of Sciences, Beijing 100049 (China); Beijing Institute of Aeronautical Materials, Department 5, P.O. Box 81-5, Beijing 100095 (China); Xu, Zhenhua; Mu, Rende [Beijing Institute of Aeronautical Materials, Department 5, P.O. Box 81-5, Beijing 100095 (China); He, Limin, E-mail: he_limin@yahoo.com [Beijing Institute of Aeronautical Materials, Department 5, P.O. Box 81-5, Beijing 100095 (China); Huang, Guanghong [Beijing Institute of Aeronautical Materials, Department 5, P.O. Box 81-5, Beijing 100095 (China); Cao, Xueqiang, E-mail: xcao@ciac.ac.cn [State Key Laboratory of Rare Earth Resource Utilization, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun 130022 (China)

2014-04-05

Highlights: • Thermal barrier coatings with a double-layer bond coat of (Ni,Pt)Al and NiCrAlYSi. • Good adherence at all interfaces within TBC system. • The underlying (Ni,Pt)Al layer can supply abundant Al content for the upper NiCrAlYSi layer. • Crack nucleation, propagation and coalescence lead to the failure of coating. -- Abstract: Electron-beam physical vapor deposited thermal barrier coatings (TBCs) with a double-layer bond coat of (Ni,Pt)Al and NiCrAlYSi were prepared on a Ni{sub 3}Al based single-crystal superalloy. Phase and cross-sectional microstructure of the developed coatings were studied by using X-ray diffraction (XRD) and scanning electron microscope (SEM), respectively. The experimental results show good adherence at all interfaces within this system. Furthermore, oxidation resistance and elements interdiffusion behavior of the double-layer bond coat were also investigated. The double-layer bond coat system exhibits a better scale adherence than the single layer bond coat systems since the underlying (Ni,Pt)Al layer can supply abundant Al for the upper NiCrAlYSi layer. Finally, thermal cycling behavior of the double-layer bond coat TBC was evaluated and the failure mechanism was discussed. Crack nucleation, propagation and coalescence caused by TGO growth stress and the thermal expansion mismatch stress between TGO and bond coat can be mainly responsible for the spallation of this coating.

Correction: General optimization procedure towards the design of a new family of minimal parameter spin-component-scaled double-hybrid density functional theory.

Science.gov (United States)

Roch, Loïc M; Baldridge, Kim K

2018-02-07

Correction for 'General optimization procedure towards the design of a new family of minimal parameter spin-component-scaled double-hybrid density functional theory' by Loïc M. Roch and Kim K. Baldridge, Phys. Chem. Chem. Phys., 2017, 19, 26191-26200.

Double trigonal warping and the anomalous quantum Hall step in bilayer graphene with Rashba spin-orbit coupling

International Nuclear Information System (INIS)

Wang Bo; Ma Zhongshui; Zhang, C

2012-01-01

We demonstrate that the trigonal warping observed in bilayer graphene is doubled in the presence of Rashba spin-orbit (RSO) coupling, i.e. the Dirac points along the three-fold symmetry axis are doubled. There are now seven Dirac points. Furthermore, the RSO interaction breaks the electron-hole symmetry of the magnetic band structure. The most intriguing feature is that the step of the quantum Hall plateau at zero energy is four times that at finite energy. The number of Dirac points and the zero energy Hall step are only determined by the existence of RSO coupling, but are independent of the strength of the coupling. The robustness of these phenomena suggests equivalence between the RSO coupling and the topological effect in bilayer coupling.

Magnetoelectric control of valley and spin in a silicene nanoribbon modulated by the magnetic superlattices

Energy Technology Data Exchange (ETDEWEB)

An, Xing-Tao, E-mail: anxt@hku.hk

2015-03-20

The control of valley and spin degrees of freedom and the transport properties of electrons in a zigzag silicene nanoribbon modulated by the magnetic superlattices are investigated theoretically. Due to the valley–spin locking effect in silicene, the valley degree of freedom can be controlled by magnetic means. The valley or/and spin selection induced by the exchange field result in the perfect spin–valley filter and tunneling magnetoresistance effect in the double ferromagnetic barriers on the surface of the silicene nanoribbon. It is more interesting that there are valley-resolved minigaps and minibands in the zigzag silicene nanoribbon modulated by the magnetic superlattices which give rise to the periodically modulated spin (or/and valley) polarization and tunneling magnetoresistance. The results obtained may have certain practical significance in applications for future valleytronic and spintronic devices. - Highlights: • The valley can be controlled by a magnetic field in silicene. • The valley-resolved miniband transport is studied in the silicene superlattices. • There are the perfect spin–valley filter and tunneling magnetoresistance effect.

Experimental verification of the rotational type of chiral spin spiral structures by spin-polarized scanning tunneling microscopy.

Science.gov (United States)

Haze, Masahiro; Yoshida, Yasuo; Hasegawa, Yukio

2017-10-16

We report on experimental verification of the rotational type of chiral spin spirals in Mn thin films on a W(110) substrate using spin-polarized scanning tunneling microscopy (SP-STM) with a double-axis superconducting vector magnet. From SP-STM images using Fe-coated W tips magnetized to the out-of-plane and [001] directions, we found that both Mn mono- and double-layers exhibit cycloidal rotation whose spins rotate in the planes normal to the propagating directions. Our results agree with the theoretical prediction based on the symmetry of the system, supporting that the magnetic structures are driven by the interfacial Dzyaloshinskii-Moriya interaction.

Positivity bounds on double parton distributions

International Nuclear Information System (INIS)

Diehl, Markus; Kasemets, Tomas

2013-03-01

Double hard scattering in proton-proton collisions is described in terms of double parton distributions. We derive bounds on these distributions that follow from their interpretation as probability densities, taking into account all possible spin correlations between two partons in an unpolarized proton. These bounds constrain the size of the polarized distributions and can for instance be used to set upper limits on the effects of spin correlations in double hard scattering. We show that the bounds are stable under leading-order DGLAP evolution to higher scales.

Observation of spin superfluidity: YIG magnetic films and beyond

Science.gov (United States)

Sonin, Edouard

2018-03-01

From topology of the order parameter of the magnon condensate observed in yttrium-iron-garnet (YIG) magnetic films one must not expect energetic barriers making spin supercurrents metastable. But we show that some barriers of dynamical origin are possible nevertheless until the gradient of the phase (angle of spin precession) does not exceed the critical value (analog of the Landau critical velocity in superfluids). On the other hand, recently published claims of experimental detection of spin superfluidity in YIG films and antiferromagnets are not justified, and spin superfluidity in magnetically ordered solids has not yet been experimentally confirmed.

On the Convergence of the ccJ-pVXZ and pcJ-n Basis Sets in CCSD Calculations of Nuclear Spin-Spin Coupling Constants

DEFF Research Database (Denmark)

Faber, Rasmus; Sauer, Stephan P. A.

2018-01-01

The basis set convergence of nuclear spin-spin coupling constants (SSCC) calculated at the coupled cluster singles and doubles (CCSD) level has been investigated for ten difficult molecules. Eight of the molecules contain fluorine atoms and nine contain double or triple bonds. Results obtained...

Simulating realistic implementations of spin field effect transistor

Science.gov (United States)

Gao, Yunfei; Lundstrom, Mark S.; Nikonov, Dmitri E.

2011-04-01

The spin field effect transistor (spinFET), consisting of two ferromagnetic source/drain contacts and a Si channel, is predicted to have outstanding device and circuit performance. We carry out a rigorous numerical simulation of the spinFET based on the nonequilibrium Green's function formalism self-consistently coupled with a Poisson solver to produce the device I-V characteristics. Good agreement with the recent experiments in terms of spin injection, spin transport, and the magnetoresistance ratio (MR) is obtained. We include factors crucial for realistic devices: tunneling through a dielectric barrier, and spin relaxation at the interface and in the channel. Using these simulations, we suggest ways of optimizing the device. We propose that by choosing the right contact material and inserting tunnel oxide barriers between the source/drain and channel to filter different spins, the MR can be restored to ˜2000%, which would be beneficial to the reconfigurable logic circuit application.

Spin-dependent Goos–Hänchen shift and spin beam splitter in gate-controllable ferromagnetic graphene

Energy Technology Data Exchange (ETDEWEB)

Wang, Y. [School of Physics and Engineering, Sun Yat-sen University, Guangzhou 510275 (China); Liu, Y., E-mail: stslyl@mail.sysu.edu.cn [School of Engineering, Sun Yat-sen University, Guangzhou 510275 (China); Wang, B., E-mail: wangbiao@mail.sysu.edu.cn [School of Physics and Engineering, Sun Yat-sen University, Guangzhou 510275 (China)

2014-03-15

The transmission and Goos–Hänchen (GH) shift for charge carriers in gate-controllable ferromagnetic graphene induced by ferromagnetic insulator are investigated theoretically. Numerical results demonstrate that spin-up and spin-down electrons exhibit remarkably different transmission and GH shifts. The spin-dependent GH shifts directly demonstrate the spin beam splitting effect, which can be controlled by the voltage of gate. We attribute the spin beam splitting effect to the combination of tunneling through potential barrier and Zeeman interaction from the magnetic field and the exchange proximity interaction between the ferromagnetic insulator and graphene. In view of the spin beam splitting effect and the spin-dependent GH shifts, the gate-controllable ferromagnetic graphene might be utilized to design spin beam splitter.

Spin-dependent Goos–Hänchen shift and spin beam splitter in gate-controllable ferromagnetic graphene

International Nuclear Information System (INIS)

Wang, Y.; Liu, Y.; Wang, B.

2014-01-01

The transmission and Goos–Hänchen (GH) shift for charge carriers in gate-controllable ferromagnetic graphene induced by ferromagnetic insulator are investigated theoretically. Numerical results demonstrate that spin-up and spin-down electrons exhibit remarkably different transmission and GH shifts. The spin-dependent GH shifts directly demonstrate the spin beam splitting effect, which can be controlled by the voltage of gate. We attribute the spin beam splitting effect to the combination of tunneling through potential barrier and Zeeman interaction from the magnetic field and the exchange proximity interaction between the ferromagnetic insulator and graphene. In view of the spin beam splitting effect and the spin-dependent GH shifts, the gate-controllable ferromagnetic graphene might be utilized to design spin beam splitter

Large magnetoresistance dips and perfect spin-valley filter induced by topological phase transitions in silicene

Science.gov (United States)

Prarokijjak, Worasak; Soodchomshom, Bumned

2018-04-01

Spin-valley transport and magnetoresistance are investigated in silicene-based N/TB/N/TB/N junction where N and TB are normal silicene and topological barriers. The topological phase transitions in TB's are controlled by electric, exchange fields and circularly polarized light. As a result, we find that by applying electric and exchange fields, four groups of spin-valley currents are perfectly filtered, directly induced by topological phase transitions. Control of currents, carried by single, double and triple channels of spin-valley electrons in silicene junction, may be achievable by adjusting magnitudes of electric, exchange fields and circularly polarized light. We may identify that the key factor behind the spin-valley current filtered at the transition points may be due to zero and non-zero Chern numbers. Electrons that are allowed to transport at the transition points must obey zero-Chern number which is equivalent to zero mass and zero-Berry's curvature, while electrons with non-zero Chern number are perfectly suppressed. Very large magnetoresistance dips are found directly induced by topological phase transition points. Our study also discusses the effect of spin-valley dependent Hall conductivity at the transition points on ballistic transport and reveals the potential of silicene as a topological material for spin-valleytronics.

Fast spin-echo imaging

International Nuclear Information System (INIS)

Mackey, K.; Zoarski, G.; Bentson, J.R.; Lufkin, R.B.; Melki, P.; Jolesz, F.

1991-01-01

This paper reports on a partial radio-frequency (RF) echo-planar pulse sequence called contiguous slice fast spin echo (CSFSE) which is undergoing clinical trials for spine MR imaging. In this variation of rapid acquisition relaxation enhanced (RARE) spin-echo imaging, rapid 180 degrees RF pulse generated refocused echoes, producing T2-weighted images in about one-third the time of conventional double-echo technique. Forty patients with suspected pathology of the spine were imaged with conventional double-echo and closely matched CSFSE techniques on a GE Signa 1.5-T Advantage system. Cases were reviewed by two board-certified neuroradiologists. In all cases the CSFSE images were of equal or superior quality compared with those obtained with the conventional double-echo technique. Pathologic processes that were imaged consisted of inflammatory, neoplastic, posttraumatic, and degenerative conditions

ON THE APPLICATION OF PARTIAL BARRIERS FOR SPINNING MACHINE NOISE CONTROL: A THEORETICAL AND EXPERIMENTAL APPROACH

Directory of Open Access Journals (Sweden)

M. R. Monazzam, A. Nezafat

2007-04-01

Full Text Available Noise is one of the most serious challenges in modern community. In some specific industries, according to the nature of process, this challenge is more threatening. This paper describes a means of noise control for spinning machine based on experimental measurements. Also advantages and disadvantages of the control procedure are added. Different factors which may affect the performance of the barrier in this situation are also mentioned. To provide a good estimation of the control measure, a theoretical formula is also described and it is compared with the field data. Good agreement between the results of filed measurements and theoretical presented model was achieved. No obvious noise reduction was seen by partial indoor barriers in low absorbent enclosed spaces, since the reflection from multiple hard surfaces is the main dominated factor in the tested environment. At the end, the situation of the environment and standards, which are necessary in attaining the ideal results, are explained.

A controllable spin prism

International Nuclear Information System (INIS)

Hakioglu, T

2009-01-01

Based on Khodas et al (2004 Phys. Rev. Lett. 92 086602), we propose a device acting like a controllable prism for an incident spin. The device is a large quantum well where Rashba and Dresselhaus spin-orbit interactions are present and controlled by the plunger gate potential, the electric field and the barrier height. A totally destructive interference can be manipulated externally between the Rashba and Dresselhaus couplings. The spin-dependent transmission/reflection amplitudes are calculated as the control parameters are changed. The device operates as a spin prism/converter/filter in different regimes and may stimulate research in promising directions in spintronics in analogy with linear optics.

Spin-transfer torque in spin filter tunnel junctions

KAUST Repository

Ortiz Pauyac, Christian

2014-12-08

Spin-transfer torque in a class of magnetic tunnel junctions with noncollinear magnetizations, referred to as spin filter tunnel junctions, is studied within the tight-binding model using the nonequilibrium Green\\'s function technique within Keldysh formalism. These junctions consist of one ferromagnet (FM) adjacent to a magnetic insulator (MI) or two FM separated by a MI. We find that the presence of the magnetic insulator dramatically enhances the magnitude of the spin-torque components compared to conventional magnetic tunnel junctions. The fieldlike torque is driven by the spin-dependent reflection at the MI/FM interface, which results in a small reduction of its amplitude when an insulating spacer (S) is inserted to decouple MI and FM layers. Meanwhile, the dampinglike torque is dominated by the tunneling electrons that experience the lowest barrier height. We propose a device of the form FM/(S)/MI/(S)/FM that takes advantage of these characteristics and allows for tuning the spin-torque magnitudes over a wide range just by rotation of the magnetization of the insulating layer.

Spin-transfer torque in spin filter tunnel junctions

KAUST Repository

Ortiz Pauyac, Christian; Kalitsov, Alan; Manchon, Aurelien; Chshiev, Mairbek

2014-01-01

Spin-transfer torque in a class of magnetic tunnel junctions with noncollinear magnetizations, referred to as spin filter tunnel junctions, is studied within the tight-binding model using the nonequilibrium Green's function technique within Keldysh formalism. These junctions consist of one ferromagnet (FM) adjacent to a magnetic insulator (MI) or two FM separated by a MI. We find that the presence of the magnetic insulator dramatically enhances the magnitude of the spin-torque components compared to conventional magnetic tunnel junctions. The fieldlike torque is driven by the spin-dependent reflection at the MI/FM interface, which results in a small reduction of its amplitude when an insulating spacer (S) is inserted to decouple MI and FM layers. Meanwhile, the dampinglike torque is dominated by the tunneling electrons that experience the lowest barrier height. We propose a device of the form FM/(S)/MI/(S)/FM that takes advantage of these characteristics and allows for tuning the spin-torque magnitudes over a wide range just by rotation of the magnetization of the insulating layer.

Electric and magnetic field modulated energy dispersion, conductivity and optical response in double quantum wire with spin-orbit interactions

Science.gov (United States)

Karaaslan, Y.; Gisi, B.; Sakiroglu, S.; Kasapoglu, E.; Sari, H.; Sokmen, I.

2018-02-01

We study the influence of electric field on the electronic energy band structure, zero-temperature ballistic conductivity and optical properties of double quantum wire. System described by double-well anharmonic confinement potential is exposed to a perpendicular magnetic field and Rashba and Dresselhaus spin-orbit interactions. Numerical results show up that the combined effects of internal and external agents cause the formation of crossing, anticrossing, camel-back/anomaly structures and the lateral, downward/upward shifts in the energy dispersion. The anomalies in the energy subbands give rise to the oscillation patterns in the ballistic conductance, and the energy shifts bring about the shift in the peak positions of optical absorption coefficients and refractive index changes.

Observation of spin Hall effect in photon tunneling via weak measurements.

Science.gov (United States)

Zhou, Xinxing; Ling, Xiaohui; Zhang, Zhiyou; Luo, Hailu; Wen, Shuangchun

2014-12-09

Photonic spin Hall effect (SHE) manifesting itself as spin-dependent splitting escapes detection in previous photon tunneling experiments due to the fact that the induced beam centroid shift is restricted to a fraction of wavelength. In this work, we report on the first observation of this tiny effect in photon tunneling via weak measurements based on preselection and postselection technique on the spin states. We find that the spin-dependent splitting is even larger than the potential barrier thickness when spin-polarized photons tunneling through a potential barrier. This photonic SHE is attributed to spin-redirection Berry phase which can be described as a consequence of the spin-orbit coupling. These findings provide new insight into photon tunneling effect and thereby offer the possibility of developing spin-based nanophotonic applications.

Observation of Spin Hall Effect in Photon Tunneling via Weak Measurements

Science.gov (United States)

Zhou, Xinxing; Ling, Xiaohui; Zhang, Zhiyou; Luo, Hailu; Wen, Shuangchun

2014-01-01

Photonic spin Hall effect (SHE) manifesting itself as spin-dependent splitting escapes detection in previous photon tunneling experiments due to the fact that the induced beam centroid shift is restricted to a fraction of wavelength. In this work, we report on the first observation of this tiny effect in photon tunneling via weak measurements based on preselection and postselection technique on the spin states. We find that the spin-dependent splitting is even larger than the potential barrier thickness when spin-polarized photons tunneling through a potential barrier. This photonic SHE is attributed to spin-redirection Berry phase which can be described as a consequence of the spin-orbit coupling. These findings provide new insight into photon tunneling effect and thereby offer the possibility of developing spin-based nanophotonic applications. PMID:25487043

A new spin-functional MOSFET based on magnetic tunnel junction technology: pseudo-spin-MOSFET

OpenAIRE

Shuto, Yusuke; Nakane, Ryosho; Wang, Wenhong; Sukegawa, Hiroaki; Yamamoto, Shuu'ichirou; Tanaka, Masaaki; Inomata, Koichiro; Sugahara, Satoshi

2009-01-01

We fabricated and characterized a new spin-functional MOSFET referred to as a pseudo-spin-MOSFET (PS-MOSFET). The PS-MOSFET is a circuit using an ordinary MOSFET and magnetic tunnel junction (MTJ) for reproducing functions of spin-transistors. Device integration techniques for a bottom gate MOSFET using a silicon-on-insulator (SOI) substrate and for an MTJ with a full-Heusler alloy electrode and MgO tunnel barrier were developed. The fabricated PS-MOSFET exhibited high and low transconductanc...

Spin filtering through ferromagnetic BiMn O3 tunnel barriers

Science.gov (United States)

Gajek, M.; Bibes, M.; Barthélémy, A.; Bouzehouane, K.; Fusil, S.; Varela, M.; Fontcuberta, J.; Fert, A.

2005-07-01

We report on experiments of spin filtering through ultrathin single-crystal layers of the insulating and ferromagnetic oxide BiMnO3 (BMO). The spin polarization of the electrons tunneling from a gold electrode through BMO is analyzed with a counterelectrode of the half-metallic oxide La2/3Sr1/3MnO3 (LSMO). At 3K we find a 50% change of the tunnel resistances according to whether the magnetizations of BMO and LSMO are parallel or opposite. This effect corresponds to a spin-filtering efficiency of up to 22%. Our results thus show the potential of complex ferromagnetic insulating oxides for spin filtering and injection.

Development of CdTe/Cd1-xMgxTe double barrier, single quantum well heterostructure for resonant tunneling

International Nuclear Information System (INIS)

Reuscher, G.; Keim, M.; Fischer, F.; Waag, A.; Landwehr, G.

1995-01-01

We report the first observation of resonant tunneling through a CdTe/Cd 1-x Mg x Te double barrier, single quantum well heterostructure. Negative differential resistance is observable at temperatures below 230 K, exhibiting a peak to valley ratio of 3:1 at 4.2 K. (author)

Spin transport in two-layer-CVD-hBN/graphene/hBN heterostructures

Science.gov (United States)

Gurram, M.; Omar, S.; Zihlmann, S.; Makk, P.; Li, Q. C.; Zhang, Y. F.; Schönenberger, C.; van Wees, B. J.

2018-01-01

We study room-temperature spin transport in graphene devices encapsulated between a layer-by-layer-stacked two-layer-thick chemical vapor deposition (CVD) grown hexagonal boron nitride (hBN) tunnel barrier, and a few-layer-thick exfoliated-hBN substrate. We find mobilities and spin-relaxation times comparable to that of SiO2 substrate-based graphene devices, and we obtain a similar order of magnitude of spin relaxation rates for both the Elliott-Yafet and D'Yakonov-Perel' mechanisms. The behavior of ferromagnet/two-layer-CVD-hBN/graphene/hBN contacts ranges from transparent to tunneling due to inhomogeneities in the CVD-hBN barriers. Surprisingly, we find both positive and negative spin polarizations for high-resistance two-layer-CVD-hBN barrier contacts with respect to the low-resistance contacts. Furthermore, we find that the differential spin-injection polarization of the high-resistance contacts can be modulated by dc bias from -0.3 to +0.3 V with no change in its sign, while its magnitude increases at higher negative bias. These features point to the distinctive spin-injection nature of the two-layer-CVD-hBN compared to the bilayer-exfoliated-hBN tunnel barriers.

Spin-dependent tunneling transport into CrO2 nanorod devices with nonmagnetic contacts.

Science.gov (United States)

Song, Yipu; Schmitt, Andrew L; Jin, Song

2008-08-01

Single-crystal nanorods of half-metallic chromium dioxide (CrO2) were synthesized and structurally characterized. Spin-dependent electrical transport was investigated in individual CrO2 nanorod devices contacted with nonmagnetic metallic electrodes. Negative magnetoresistance (MR) was observed at low temperatures due to the spin-dependent direct tunneling through the contact barrier and the high spin polarization in the half-metallic nanorods. The magnitude of this negative magnetoresistance decreases with increasing bias voltage and temperature due to spin-independent inelastic hopping through the barrier, and a small positive magnetoresistance was found at room temperature. It is believed that the contact barrier and the surface state of the nanorods have great influence on the spin-dependent transport limiting the magnitude of MR effect in this first attempt at spin filter devices of CrO2 nanorods with nonmagnetic contacts.

Bound magnetic polaron in a semimagnetic double quantum well

Science.gov (United States)

Kalpana, P.; Jayakumar, K.

2017-09-01

The effect of different combinations of the concentration of Mn2+ ion in the Quantum well Cd1-xinMnxin Te and the barrier Cd1-xoutMnxout Te on the Bound Magnetic Polaron (BMP) in a Diluted Magnetic Semiconductors (DMS) Double Quantum Well (DQW) has been investigated. The Schrodinger equation is solved variationally in the effective mass approximation through which the Spin Polaronic Shift (SPS) due to the formation of BMP has been estimated for various locations of the donor impurity in the DQW. The results show that the effect of the increase of Mn2+ ion composition with different combinations on SPS is predominant for On Centre Well (OCW) impurity when compared to all other impurity locations when there is no application of magnetic field (γ = 0), γ being a dimensionless parameter for the magnetic field, and the same is predominant for On Centre Barrier (OCB) impurity with the application of external magnetic field (γ = 0.15).

Four-state non-volatile memory in a multiferroic spin filter tunnel junction

Science.gov (United States)

Ruan, Jieji; Li, Chen; Yuan, Zhoushen; Wang, Peng; Li, Aidong; Wu, Di

2016-12-01

We report a spin filter type multiferroic tunnel junction with a ferromagnetic/ferroelectric bilayer barrier. Memory functions of a spin filter magnetic tunnel junction and a ferroelectric tunnel junction are combined in this single device, producing four non-volatile resistive states that can be read out in a non-destructive manner. This concept is demonstrated in a LaNiO3/Pr0.8Ca0.2MnO3/BaTiO3/La0.7Sr0.3MnO3 all-oxide tunnel junction. The ferromagnetic insulator Pr0.8Ca0.2MnO3 serves as the spin filter and the ferromagnetic metal La0.7Sr0.3MnO3 is the spin analyzer. The ferroelectric polarization reversal in the BaTiO3 barrier switches the tunneling barrier height to produce a tunneling electroresistance. The ferroelectric switching also modulates the spin polarization and the spin filtering efficiency in Pr0.8Ca0.2MnO3.

Spin-polarized tunneling through a ferromagnetic insulator

NARCIS (Netherlands)

Kok, M.; Kok, M.; Beukers, J.N.; Brinkman, Alexander

2009-01-01

The polarization of the tunnel conductance of spin-selective ferromagnetic insulators is modeled, providing a generalized concept of polarization including both the effects of electrode and barrier polarization. The polarization model is extended to take additional non-spin-polarizing insulating

Effect of deformation and orientation on spin orbit density dependent nuclear potential

Science.gov (United States)

Mittal, Rajni; Kumar, Raj; Sharma, Manoj K.

2017-11-01

Role of deformation and orientation is investigated on spin-orbit density dependent part VJ of nuclear potential (VN=VP+VJ) obtained within semi-classical Thomas Fermi approach of Skyrme energy density formalism. Calculations are performed for 24-54Si+30Si reactions, with spherical target 30Si and projectiles 24-54Si having prolate and oblate shapes. The quadrupole deformation β2 is varying within range of 0.023 ≤ β2 ≤0.531 for prolate and -0.242 ≤ β2 ≤ -0.592 for oblate projectiles. The spin-orbit dependent potential gets influenced significantly with inclusion of deformation and orientation effect. The spin-orbit barrier and position gets significantly influenced by both the sign and magnitude of β2-deformation. Si-nuclei with β220. The possible role of spin-orbit potential on barrier characteristics such as barrier height, barrier curvature and on the fusion pocket is also probed. In reference to prolate and oblate systems, the angular dependence of spin-orbit potential is further studied on fusion cross-sections.

Longitudinal double spin asymmetries in single hadron quasi-real photoproduction at high pT

Directory of Open Access Journals (Sweden)

C. Adolph

2016-02-01

Full Text Available We measured the longitudinal double spin asymmetries ALL for single hadron muoproduction off protons and deuterons at photon virtuality Q2<1(GeV/c2 for transverse hadron momenta pT in the range 1 GeV/c to 4 GeV/c. They were determined using COMPASS data taken with a polarised muon beam of 160 GeV/c or 200 GeV/c impinging on polarised 6LiD or NH3 targets. The experimental asymmetries are compared to next-to-leading order pQCD calculations, and are sensitive to the gluon polarisation ΔG inside the nucleon in the range of the nucleon momentum fraction carried by gluons 0.05

Double barrier system for an in situ conversion process

Science.gov (United States)

McKinzie, Billy John [Houston, TX; Vinegar, Harold J [Bellaire, TX; Cowan, Kenneth Michael [Sugar land, TX; Deeg, Wolfgang Friedrich Johann [Houston, TX; Wong, Sau-Wai [Rijswijk, NL

2009-05-05

A barrier system for a subsurface treatment area is described. The barrier system includes a first barrier formed around at least a portion of the subsurface treatment area. The first barrier is configured to inhibit fluid from exiting or entering the subsurface treatment area. A second barrier is formed around at least a portion of the first barrier. A separation space exists between the first barrier and the second barrier.

Technology spin-offs generation – a multicase study

Directory of Open Access Journals (Sweden)

Jonas Mendes Constante

2014-05-01

Full Text Available The objective of this study is to understand how small businesses can innovate through the generation of technological spin-offs, identifying motivations, influences and barriers to achieving this phenomenon. Through a qualitative and exploratory study, we analyzed four cases of technological spin-offs in Santa Catarina State. We collected data through field observations, historical data and semi-structured interviews. The main reasons found for spin-offs creation were: diversification and to complement the value chain of the parent company and to ensure greater focus for a specific technology. The main barrier was lack of capital. Government initiatives to support the creation of new businesses, coupled with the organizational culture open to entrepreneurship and investment in R&D, contributed to the development of spin-offs analyzed. This work contributes to the understanding that small and medium-sized technology-based companies are a source of technological spin-offs and can benefit from the occurrence of this process.

The design and investigation of hybrid ferromagnetic/silicon spin electronic devices

International Nuclear Information System (INIS)

Pugh, D.I.

2001-01-01

The focus of this study concerns the design and investigation of ferromagnetic/silicon hybrid spin electronic devices as part of a wider project to design a novel spin valve transistor. The key issue to obtain a room temperature spin electronic device is the electrical injection of a spin polarised current from a ferromagnetic contact into a semiconductor. Despite many attempts concentrating on GaAs and InAs only small (< 1%) effects have been observed, making it difficult to confirm spin injection. Lateral devices were designed and fabricated using standard device fabrication procedures to produce arrays of Co/Si/So junctions. Subsequent designs aimed to reduce the number of junctions and improve device isolation. Evidence for spin dependent MR of up to 0.56% was observed in Co/p-Si/Co junctions with silicon gaps up to 16 μm in length. The maximum MR was observed when the first Co/Si Schottky barrier was reverse biased forming a high resistance interface. Vertical devices were designed in an attempt to eliminate any alternative current paths by using a well defined, 1 μm thick silicon membrane. Despite attempts to include oxide barriers, no spin dependent MR was observed in these devices. However, a novel vertical silicon based design has been made which should facilitate further advanced studies of spin injection and transport. The spin diffusion length in n-type silicon has been calculated as a function of doping concentration and temperature by considering the spin relaxation mechanisms in the semiconductor. Discussion has been made concerning p-type silicon and comparisons made with GaAs, indicating that n-Si should show longer spin diffusion lengths. The key design criteria for designing room temperature spin electronic devices have been highlighted. These include the use of a high leakage Schottky barrier or tunnel barrier between the ferromagnet and p-Si and a contact to the silicon to enable appropriate biasing to each FM/Si interface. (author)

Scalable Spin-Qubit Circuits with Quantum Dots

Science.gov (United States)

2006-12-31

Anisotropic Heisenberg Spin Rings” cond-mat/0608642. 13. Karyn Le Hur (Yale), Pascal Simon, and Daniel Loss, “Transport through a quantum dot with SU(4...Daniel Loss, “Nuclear spin state narrowing via gate--controlled Rabi oscillations in a double quantum dot” Phys. Rev. B 73, 205302 (2006). 27. Jörg...single spin read out (Delft), sqrt-of-swap (Harvard) and single spin Rabi oscillations. At the end of this program and based on our theoretical

Two-Dimensional Simulation of Spatial-Temporal Behaviors About Period Doubling Bifurcation in an Atmospheric-Pressure Dielectric Barrier Discharge

International Nuclear Information System (INIS)

Zhang Jiao; Wang Yanhui; Wang Dezhen; Zhuang Juan

2014-01-01

As a spatially extended dissipated system, atmospheric-pressure dielectric barrier discharges (DBDs) could in principle possess complex nonlinear behaviors. In order to improve the stability and uniformity of atmospheric-pressure dielectric barrier discharges, studies on temporal behaviors and radial structure of discharges with strong nonlinear behaviors under different controlling parameters are much desirable. In this paper, a two-dimensional fluid model is developed to simulate the radial discharge structure of period-doubling bifurcation, chaos, and inverse period-doubling bifurcation in an atmospheric-pressure DBD. The results show that the period-2n (n = 1, 2…) and chaotic discharges exhibit nonuniform discharge structure. In period-2n or chaos, not only the shape of current pulses doesn't remains exactly the same from one cycle to another, but also the radial structures, such as discharge spatial evolution process and the strongest breakdown region, are different in each neighboring discharge event. Current-voltage characteristics of the discharge system are studied for further understanding of the radial structure. (low temperature plasma)

Measurements of the Double-Spin Asymmetry A1 on Helium-3: Toward a Precise Measurement of the Neutron A1

International Nuclear Information System (INIS)

Parno, Diana Seymour

2011-01-01

The spin structure of protons and neutrons has been an open question for nearly twenty-five years, after surprising experimental results disproved the simple model in which valence quarks were responsible for nearly 100% of the nucleon spin. Diverse theoretical approaches have been brought to bear on the problem, but a shortage of precise data - especially on neutron spin structure - has prevented a thorough understanding. Experiment E06-014, conducted in Hall A of Jefferson Laboratory in 2009, presented an opportunity to add to the world data set for the neutron in the poorly covered valence-quark region. Jefferson Laboratory's highly polarized electron beam, combined with Hall A's facilities for a high-density, highly polarized 3 He target, allowed a high-luminosity double-polarized experiment, while the large acceptance of the BigBite spectrometer gave coverage over a wide kinematic range: 0.15 2 2 . From these data, we extract the longitudinal asymmetry in virtual photon-nucleon scattering, A 1 , on the 3 He nucleus. Combined with the remaining E06-014 data, this will form the basis of a measurement of the neutron asymmetry A n 1 that will extend the kinematic range of the data available to test models of spin-dependent parton distributions in the nucleon

Longitudinal double spin asymmetries in single hadron quasi-real photoproduction at high $p_T$

CERN Document Server

Adolph, C; Alexeev, M G; Alexeev, G D; Amoroso, A; Andrieux, V; Anosov, V; Augustyniak, W; Austregesilo, A; Azevedo, C D R; Badełek, B; Balestra, F; Barth, J; Beck, R; Bedfer, Y; Bernhard, J; Bicker, K; Bielert, E R; Birsa, R; Bisplinghoff, J; Bodlak, M; Boer, M; Bordalo, P; Bradamante, F; Braun, C; Bressan, A; Büchele, M; Burtin, E; Chang, W-C; Chiosso, M; Choi, I; Chung, S U; Cicuttin, A; Crespo, M L; Curiel, Q; Dalla Torre, S; Dasgupta, S S; Dasgupta, S; Denisov, O Yu; Dhara, L; Donskov, S V; Doshita, N; Duic, V; Dünnweber, W; Dziewiecki, M; Efremov, A; Eversheim, P D; Eyrich, W; Faessler, M; Ferrero, A; Finger, M; Finger jr , M; Fischer, H; Franco, C; du Fresne von Hohenesche, N; Friedrich, J M; Frolov, V; Fuchey, E; Gautheron, F; Gavrichtchouk, O P; Gerassimov, S; Giordano, F; Gnesi, I; Gorzellik, M; Grabmüller, S; Grasso, A; Grosse Perdekamp, M; Grube, B; Grussenmeyer, T; Guskov, A; Haas, F; Hahne, D; von Harrach, D; Hashimoto, R; Heinsius, F H; Herrmann, F; Hinterberger, F; Horikawa, N; d'Hose, N; Hsieh, C-Y; Huber, S; Ishimoto, S; Ivanov, A; Ivanshin, Yu; Iwata, T; Jahn, R; Jary, V; Joosten, R; Jörg, P; Kabuß, E; Ketzer, B; Khaustov, G V; Khokhlov, Yu A; Kisselev, Yu; Klein, F; Klimaszewski, K; Koivuniemi, J H; Kolosov, V N; Kondo, K; Königsmann, K; Konorov, I; Konstantinov, V F; Kotzinian, A M; Kouznetsov, O; Krämer, M; Kremser, P; Krinner, F; Kroumchtein, Z V; Kuchinski, N; Kuhn, R; Kunne, F; Kurek, K; Kurjata, R P; Lednev, A A; Lehmann, A; Levillain, M; Levorato, S; Lichtenstadt, J; Longo, R; Maggiora, A; Magnon, A; Makins, N; Makke, N; Mallot, G K; Marchand, C; Marianski, B; Martin, A; Marzec, J; Matoušek, J; Matsuda, H; Matsuda, T; Meshcheryakov, G; Meyer, W; Michigami, T; Mikhailov, Yu V; Miyachi, Y; Montuenga, P; Nagaytsev, A; Nerling, F; Neyret, D; Nikolaenko, V I; Nový, J; Nowak, W-D; Nukazuka, G; Nunes, A S; Olshevsky, A G; Orlov, I; Ostrick, M; Panzieri, D; Parsamyan, B; Paul, S; Peng, J-C; Pereira, F; Pešek, M; Peshekhonov, D V; Platchkov, S; Pochodzalla, J; Polyakov, V A; Pretz, J; Quaresma, M; Quintans, C; Ramos, S; Regali, C; Reicherz, G; Riedl, C; Rossiyskaya, N S; Ryabchikov, D I; Rychter, A; Samoylenko, V D; Sandacz, A; Santos, C; Sarkar, S; Savin, I A; Sbrizzai, G; Schiavon, P; Schmidt, K; Schmieden, H; Schönning, K; Schopferer, S; Selyunin, A; Shevchenko, O Yu; Silva, L; Sinha, L; Sirtl, S; Slunecka, M; Sozzi, F; Srnka, A; Stolarski, M; Sulc, M; Suzuki, H; Szabelski, A; Szameitat, T; Sznajder, P; Takekawa, S; Tessaro, S; Tessarotto, F; Thibaud, F; Tosello, F; Tskhay, V; Uhl, S; Veloso, J; Virius, M; Weisrock, T; Wilfert, M; ter Wolbeek, J; Zaremba, K; Zavertyaev, M; Zemlyanichkina, E; Ziembicki, M; Zink, A

2016-01-01

We measured the longitudinal double spin asymmetries $A_{LL}$ for single hadron muo-production off protons and deuterons at photon virtuality $Q^2$ < 1(GeV/$\\it c$)$^2$ for transverse hadron momenta $p_T$ in the range 0.7 GeV/$\\it c$ to 4 GeV/$\\it c$ . They were determined using COMPASS data taken with a polarised muon beam of 160 GeV/$\\it c$ or 200 GeV/$\\it c$ impinging on polarised $\\mathrm{{}^6LiD}$ or $\\mathrm{NH_3}$ targets. The experimental asymmetries are compared to next-to-leading order pQCD calculations, and are sensitive to the gluon polarisation $\\Delta G$ inside the nucleon in the range of the nucleon momentum fraction carried by gluons $0.05 < x_g < 0.2$.

Voltage-driven versus current-driven spin torque in anisotropic tunneling junctions

KAUST Repository

Manchon, Aurelien

2011-01-01

Nonequilibrium spin transport in a magnetic tunnel junction comprising a single magnetic layer in the presence of interfacial spin-orbit interaction (SOI) is studied theoretically. The interfacial SOI generates a spin torque of the form T=T∥ M×(z× M)+T⊥ z× M, even in the absence of an external spin polarizer. For thick and large tunnel barriers, the torque reduces to the perpendicular component T⊥, which can be electrically tuned by applying a voltage across the insulator. In the limit of thin and low tunnel barriers, the in-plane torque T∥ emerges, proportional to the tunneling current density. Experimental implications on magnetic devices are discussed. © 2011 IEEE.

Voltage-driven versus current-driven spin torque in anisotropic tunneling junctions

KAUST Repository

Manchon, Aurelien

2011-10-01

Nonequilibrium spin transport in a magnetic tunnel junction comprising a single magnetic layer in the presence of interfacial spin-orbit interaction (SOI) is studied theoretically. The interfacial SOI generates a spin torque of the form T=T∥ M×(z× M)+T⊥ z× M, even in the absence of an external spin polarizer. For thick and large tunnel barriers, the torque reduces to the perpendicular component T⊥, which can be electrically tuned by applying a voltage across the insulator. In the limit of thin and low tunnel barriers, the in-plane torque T∥ emerges, proportional to the tunneling current density. Experimental implications on magnetic devices are discussed. © 2011 IEEE.

Tunnel barrier and noncollinear magnetization effects on shot noise in ferromagnetic/semiconductor/ferromagnetic heterojunctions

International Nuclear Information System (INIS)

An Xingtao; Liu Jianjun

2008-01-01

Based on the scattering approach, we investigate transport properties of electrons in a one-dimensional waveguide that contains a ferromagnetic/semiconductor/ferromagnetic heterojunction and tunnel barriers in the presence of Rashba and Dresselhaus spin-orbit interactions. We simultaneously consider significant quantum size effects, quantum coherence, Rashba and Dresselhaus spin-orbit interactions and noncollinear magnetizations. It is found that the tunnel barrier plays a decisive role in the transmission coefficient and shot noise of the ballistic spin electron transport through the heterojunction. When the small tunnel barriers are considered, the transport properties of electrons are quite different from those without tunnel barriers

Picture book of nucleon--nucleon scattering: amplitudes, models, double- and triple-spin observables

International Nuclear Information System (INIS)

Field, R.D.; Stevens, P.R.

1975-01-01

A comprehensive study of nucleon-nucleon scattering is presented with particular emphasis on the underlying amplitude structure. The five complex NN amplitudes are determined as a function of energy and momentum transfer from existing pp, anti pp, and np elastic scattering data and np and anti pp CHEX data. Some constraints determined from meson-baryon fits are imposed. The resulting amplitudes are used to make predictions of forthcoming double- and triple-spin measurements, and are also compared with the model amplitudes of Kane and Seidl. In addition, the usefulness of transversity amplitudes in NN scattering is discussed, the status of our present knowledge concerning them is examined, and model predictions of these amplitudes are displayed. The paper is presented in a ''picture book'' form so that the reader can get a good overview of NN scattering by studying the figures and reading the tables and figure captions

Double discharges in unipolar-pulsed dielectric barrier discharge xenon excimer lamps

International Nuclear Information System (INIS)

Liu Shuhai; Neiger, Manfred

2003-01-01

Excitation of dielectric barrier discharge xenon excimer lamps by unipolar short square pulses is studied in this paper. Two discharges with different polarity are excited by each voltage pulse (double discharge phenomenon). The primary discharge occurs at the top or at the rising flank of the applied unipolar square pulse, which is directly energized by the external circuit. The secondary discharge with the reversed polarity occurs at the falling flank or shortly after the falling flank end (zero external voltage) depending on the pulse width, which is energized by the energy stored by memory charges deposited by the primary discharge. Fast-speed ICCD imaging shows the primary discharge has a conic discharge appearance with a channel broadening on the anode side. This channel broadening increases with increasing the pulse top level. Only the anode-side surface discharge is observed in the primary discharge. The surface discharge on the cathode side which is present in bipolar sine voltage excitation is not observed. On the contrary, the secondary discharge has only the cathode-side surface discharge. The surface discharge on the anode side is not observed. The secondary discharge is much more diffuse than the primary discharge. Time-resolved emission measurement of double discharges show the secondary discharge emits more VUV xenon excimer radiation but less infrared (IR) xenon atomic emission than the primary discharge. It was found that the IR xenon atomic emission from the secondary discharge can be reduced by shortening the pulse width. The energy efficiency of unipolar-pulsed xenon excimer lamps (the overall energy efficiency of double discharges) is much higher than that obtained under bipolar sine wave excitation. The output VUV spectrum under unipolar pulse excitation is found to be identical to that under sine wave excitation and independent of injected electric power

Phase transitions and thermal entanglement of the distorted Ising-Heisenberg spin chain: topology of multiple-spin exchange interactions in spin ladders

Science.gov (United States)

Arian Zad, Hamid; Ananikian, Nerses

2017-11-01

We consider a symmetric spin-1/2 Ising-XXZ double sawtooth spin ladder obtained from distorting a spin chain, with the XXZ interaction between the interstitial Heisenberg dimers (which are connected to the spins based on the legs via an Ising-type interaction), the Ising coupling between nearest-neighbor spins of the legs and rungs spins, respectively, and additional cyclic four-spin exchange (ring exchange) in the square plaquette of each block. The presented analysis supplemented by results of the exact solution of the model with infinite periodic boundary implies a rich ground state phase diagram. As well as the quantum phase transitions, the characteristics of some of the thermodynamic parameters such as heat capacity, magnetization and magnetic susceptibility are investigated. We prove here that among the considered thermodynamic and thermal parameters, solely heat capacity is sensitive versus the changes of the cyclic four-spin exchange interaction. By using the heat capacity function, we obtain a singularity relation between the cyclic four-spin exchange interaction and the exchange coupling between pair spins on each rung of the spin ladder. All thermal and thermodynamic quantities under consideration should be investigated by regarding those points which satisfy the singularity relation. The thermal entanglement within the Heisenberg spin dimers is investigated by using the concurrence, which is calculated from a relevant reduced density operator in the thermodynamic limit.

'Al' concentration on spin-dependent resonant tunnelling in InAs/Ga

Indian Academy of Sciences (India)

The separation between spin-up and spin-down components, barrier transparency, polarization efficiency and tunnelling lifetime were calculated using the transfer matrix approach. The separation between spin-up and spin-down resonances and tunnelling lifetime were reportedfor the first time in the case of InAs/Ga 1 − y ...

Dilute nitride based double-barrier quantum-well infrared photodetector operating in the near infrared

International Nuclear Information System (INIS)

Luna, E.; Hopkinson, M.; Ulloa, J. M.; Guzman, A.; Munoz, E.

2003-01-01

Near-infrared detection is reported for a double-barrier quantum-well infrared photodetector based on a 30-A GaAs 1-y N y (y≅0.01) quantum well. The growth procedure using plasma-assisted molecular-beam epitaxy is described. The as-grown sample exhibits a detection wavelength of 1.64 μm at 25 K. The detection peak strengthens and redshifts to 1.67 μm following rapid thermal annealing at 850 deg. C for 30 s. The detection peak position is consistent with the calculated band structure based on the band-anticrossing model for nitrogen incorporation into GaAs

Exchange bias in Fe/Cr double superlattices

International Nuclear Information System (INIS)

Jiang, J. S.; Felcher, G. P.; Inomata, A.; Goyette, R.; Nelson, C.; Bader, S. D.

1999-01-01

Utilizing the oscillatory interlayer exchange coupling in Fe/Cr superlattices, we have constructed ''double superlattice'' structures where a ferromagnetic (F) and an antiferromagnetic (AF) Fe/Cr superlattice are coupled through a Cr spacer. The minor hysteresis loops in the magnetization are shifted from zero field, i.e., the F superlattice is exchange biased by the AF one. The double superlattices are sputter-deposited with (211) epitaxy and possess uniaxial in-plane magnetic anisotropy. The magnitude of the bias field is satisfactorily described by the classic formula for collinear spin structures. The coherent structure and insensitivity to atomic-scale roughness makes it possible to determine the spin distribution by polarized neutron reflectivity, which confirms that the spin structure is collinear. The magnetic reversal behavior of the double superlattices suggests that a realistic model of exchange bias needs to address the process of nucleating local reverse domains

Exchange bias in Fe/Cr double superlattices

International Nuclear Information System (INIS)

Jiang, J. S.; Felcher, G. P.; Inomata, A.; Goyette, R.; Nelson, C. S.; Bader, S. D.

2000-01-01

Utilizing the oscillatory interlayer exchange coupling in Fe/Cr superlattices, we have constructed ''double superlattice'' structures where a ferromagnetic (F) and an antiferromagnetic (AF) Fe/Cr superlattice are coupled through a Cr spacer. The minor hysteresis loops in the magnetization are shifted from zero field, i.e., the F superlattice is exchange biased by the AF one. The double superlattices are sputter deposited with (211) epitaxy and possess uniaxial in-plane magnetic anisotropy. The magnitude of the bias field is satisfactorily described by the classic formula for collinear spin structures. The coherent structure and insensitivity to atomic-scale roughness makes it possible to determine the spin distribution by polarized neutron reflectivity, which confirms that the spin structure is collinear. The magnetic reversal behavior of the double superlattices suggests that a realistic model of exchange bias needs to address the process of nucleating local reverse domains. (c) 2000 American Vacuum Society

Investigation of airflow effects on the dielectric barrier discharge with single/double discharge channel arrangement

Science.gov (United States)

Fan, Zhihui; Yan, Huijie; Liu, Yidi; Guo, Hongfei; Wang, Yuying; Ren, Chunsheng

2018-05-01

Atmospheric-pressure dielectric barrier discharge (DBD) with airflow participation has been widely used in recent years. In this paper, effects of airflow on DBD characteristics are experimentally investigated by single/double pin-to-plate DBD arrangements with an AC exciting source. The discharge electrical characteristics and the movements of discharge channels in airflow are investigated with a single pin electrode arrangement. The current intensities increase in positive cycles and decrease in negative cycles with the increase in airflow velocity. The transition from a filamentary discharge to a diffuse discharge is observed under certain airflow conditions, and the discharge channels move with the airflow with a movement velocity less than the corresponding airflow velocity. In the cases of double pin electrode arrangements, the repulsion between double pin discharge channels is apparent at a 10 mm distance but is not obvious at a 20 mm distance. When the airflow is introduced into the discharge gap, not as in the case of single pin electrode arrangement, the movements of discharge channels in airflow are affected by adjacent discharge channels. The corresponding reasons are analyzed in the paper.

The transition mechanism from a symmetric single period discharge to a period-doubling discharge in atmospheric helium dielectric-barrier discharge

International Nuclear Information System (INIS)

Zhang, Dingzong; Wang, Yanhui; Wang, Dezhen

2013-01-01

Period-doubling and chaos phenomenon have been frequently observed in atmospheric-pressure dielectric-barrier discharges. However, how a normal single period discharge bifurcates into period-doubling state is still unclear. In this paper, by changing the driving frequency, we study numerically the transition mechanisms from a normal single period discharge to a period-doubling state using a one-dimensional self-consistent fluid model. The results show that before a discharge bifurcates into a period-doubling state, it first deviates from its normal operation and transforms into an asymmetric single period discharge mode. Then the weaker discharge in this asymmetric discharge will be enhanced gradually with increasing of the frequency until it makes the subsequent discharge weaken and results in the discharge entering a period-doubling state. In the whole transition process, the spatial distribution of the charged particle density and the electric field plays a definitive role. The conclusions are further confirmed by changing the gap width and the amplitude of the applied voltage

The transition mechanism from a symmetric single period discharge to a period-doubling discharge in atmospheric helium dielectric-barrier discharge

Energy Technology Data Exchange (ETDEWEB)

Zhang, Dingzong; Wang, Yanhui; Wang, Dezhen [School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116024 (China)

2013-06-15

Period-doubling and chaos phenomenon have been frequently observed in atmospheric-pressure dielectric-barrier discharges. However, how a normal single period discharge bifurcates into period-doubling state is still unclear. In this paper, by changing the driving frequency, we study numerically the transition mechanisms from a normal single period discharge to a period-doubling state using a one-dimensional self-consistent fluid model. The results show that before a discharge bifurcates into a period-doubling state, it first deviates from its normal operation and transforms into an asymmetric single period discharge mode. Then the weaker discharge in this asymmetric discharge will be enhanced gradually with increasing of the frequency until it makes the subsequent discharge weaken and results in the discharge entering a period-doubling state. In the whole transition process, the spatial distribution of the charged particle density and the electric field plays a definitive role. The conclusions are further confirmed by changing the gap width and the amplitude of the applied voltage.

Single and double spin asymmetries for deeply virtual Compton scattering measured with CLAS and a longitudinally polarized proton target

Science.gov (United States)

Pisano, S.; Biselli, A.; Niccolai, S.; Seder, E.; Guidal, M.; Mirazita, M.; Adhikari, K. P.; Adikaram, D.; Amaryan, M. J.; Anderson, M. D.; Anefalos Pereira, S.; Avakian, H.; Ball, J.; Battaglieri, M.; Batourine, V.; Bedlinskiy, I.; Bosted, P.; Briscoe, B.; Brock, J.; Brooks, W. K.; Burkert, V. D.; Carlin, C.; Carman, D. S.; Celentano, A.; Chandavar, S.; Charles, G.; Colaneri, L.; Cole, P. L.; Compton, N.; Contalbrigo, M.; Cortes, O.; Crabb, D. G.; Crede, V.; D'Angelo, A.; De Vita, R.; De Sanctis, E.; Deur, A.; Djalali, C.; Dupre, R.; Egiyan, H.; El Alaoui, A.; El Fassi, L.; Elouadrhiri, L.; Eugenio, P.; Fedotov, G.; Fegan, S.; Fersch, R.; Filippi, A.; Fleming, J. A.; Fradi, A.; Garillon, B.; Garçon, M.; Ghandilyan, Y.; Gilfoyle, G. P.; Giovanetti, K. L.; Girod, F. X.; Goetz, J. T.; Gohn, W.; Golovatch, E.; Gothe, R. W.; Griffioen, K. A.; Guo, L.; Hafidi, K.; Hanretty, C.; Hattawy, M.; Hicks, K.; Holtrop, M.; Hughes, S. M.; Ilieva, Y.; Ireland, D. G.; Ishkhanov, B. S.; Jenkins, D.; Jiang, X.; Jo, H. S.; Joo, K.; Joosten, S.; Keith, C. D.; Keller, D.; Kim, A.; Kim, W.; Klein, F. J.; Kubarovsky, V.; Kuhn, S. E.; Lenisa, P.; Livingston, K.; Lu, H. Y.; MacCormick, M.; MacGregor, I. J. D.; Mayer, M.; McKinnon, B.; Meekins, D. G.; Meyer, C. A.; Mokeev, V.; Montgomery, R. A.; Moody, C. I.; Munoz Camacho, C.; Nadel-Turonski, P.; Osipenko, M.; Ostrovidov, A. I.; Park, K.; Phelps, W.; Phillips, J. J.; Pogorelko, O.; Price, J. W.; Procureur, S.; Prok, Y.; Puckett, A. J. R.; Ripani, M.; Rizzo, A.; Rosner, G.; Rossi, P.; Roy, P.; Sabatié, F.; Salgado, C.; Schott, D.; Schumacher, R. A.; Skorodumina, I.; Smith, G. D.; Sober, D. I.; Sokhan, D.; Sparveris, N.; Stepanyan, S.; Stoler, P.; Strauch, S.; Sytnik, V.; Tian, Ye; Tkachenko, S.; Turisini, M.; Ungaro, M.; Voutier, E.; Walford, N. K.; Watts, D. P.; Wei, X.; Weinstein, L. B.; Wood, M. H.; Zachariou, N.; Zana, L.; Zhang, J.; Zhao, Z. W.; Zonta, I.; CLAS Collaboration

2015-03-01

Single-beam, single-target, and double spin asymmetries for hard exclusive electroproduction of a photon on the proton e →p →→e'p'γ are presented. The data were taken at Jefferson Lab using the CEBAF large acceptance spectrometer and a longitudinally polarized NH3 14 target. The three asymmetries were measured in 165 four-dimensional kinematic bins, covering the widest kinematic range ever explored simultaneously for beam and target-polarization observables in the valence quark region. The kinematic dependences of the obtained asymmetries are discussed and compared to the predictions of models of generalized parton distributions. The measurement of three DVCS spin observables at the same kinematic points allows a quasi-model-independent extraction of the imaginary parts of the H and H ˜ Compton form factors, which give insight into the electric and axial charge distributions of valence quarks in the proton.

Single and double spin asymmetries for deeply virtual Compton scattering measured with CLAS and a longitudinally polarized proton target

Energy Technology Data Exchange (ETDEWEB)

Pisano, S.; Biselli, A.; Niccolai, S.; Seder, E.; Guidal, M.; Mirazita, M.; Adhikari, K. P.; Adikaram, D.; Amaryan, M. J.; Anderson, M. D.; Anefalos Pereira, S.; Avakian, H.; Ball, J.; Battaglieri, M.; Batourine, V.; Bedlinskiy, I.; Bosted, P.; Briscoe, B.; Brock, J.; Brooks, W. K.; Burkert, V. D.; Carlin, C.; Carman, D. S.; Celentano, A.; Chandavar, S.; Charles, G.; Colaneri, L.; Cole, P. L.; Compton, N.; Contalbrigo, M.; Cortes, O.; Crabb, D. G.; Crede, V.; D' Angelo, A.; De Vita, R.; De Sanctis, E.; Deur, A.; Djalali, C.; Dupre, R.; Egiyan, H.; El Alaoui, A.; El Fassi, L.; Elouadrhiri, L.; Eugenio, P.; Fedotov, G.; Fegan, S.; Fersch, R.; Filippi, A.; Fleming, J. A.; Fradi, A.; Garillon, B.; Garcon, M.; Ghandilyan, Y.; Gilfoyle, G. P.; Giovanetti, K. L.; Girod, F. X.; Goetz, J. T.; Gohn, W.; Golovatch, E.; Gothe, R. W.; Griffioen, K. A.; Guo, L.; Hafidi, K.; Hanretty, C.; Hattawy, M.; Hicks, K.; Holtrop, M.; Hughes, S. M.; Ilieva, Y.; Ireland, D. G.; Ishkhanov, B. S.; Jenkins, D.; Jiang, X.; Jo, H. S.; Joo, K.; Joosten, S.; Keith, C. D.; Keller, D.; Kim, A.; Kim, W.; Klein, F. J.; Kubarovsky, V.; Kuhn, S. E.; Lenisa, P.; Livingston, K.; Lu, H. Y.; MacCormick, M.; MacGregor, Ian J. D.; Mayer, M.; McKinnon, B.; Meekins, D. G.; Meyer, C. A.; Mokeev, V.; Montgomery, R. A.; Moody, C. I.; Munoz Camacho, C.; Nadel-Turonski, P.; Osipenko, M.; Ostrovidov, A. I.; Park, K.; Phelps, W.; Phillips, J. J.; Pogorelko, O.; Price, J. W.; Procureur, S.; Prok, Y.; Puckett, A. J. R.; Ripani, M.; Rizzo, A.; Rosner, G.; Rossi, P.; Roy, P.; Sabatie, F.; Salgado, C.; Schott, D.; Schumacher, R. A.; Skorodumina, I.; Smith, G. D.; Sober, D. I.; Sokhan, D.; Sparveris, N.; Stepanyan, S.; Stoler, P.; Strauch, S.; Sytnik, V.; Tian, Ye; Tkachenko, S.; Turisini, M.; Ungaro, M.; Voutier, E.; Walford, N. K.; Watts, D. P.; Wei, X.; Weinstein, L. B.; Wood, M. H.; Zachariou, N.; Zana, L.; Zhang, J.; Zhao, Z. W.; Zonta, I.

2015-03-19

Single-beam, single-target, and double-spin asymmetries for hard exclusive photon production on the proton e→p→e'p'γ are presented. The data were taken at Jefferson Lab using the CLAS detector and a longitudinally polarized ¹⁴NH₃ target. The three asymmetries were measured in 165 4-dimensional kinematic bins, covering the widest kinematic range ever explored simultaneously for beam and target-polarization observables in the valence quark region. The kinematic dependences of the obtained asymmetries are discussed and compared to the predictions of models of Generalized Parton Distributions. As a result, the measurement of three DVCS spin observables at the same kinematic points allows a quasi-model-independent extraction of the imaginary parts of the H and H~ Compton Form Factors, which give insight into the electric and axial charge distributions of valence quarks in the proton.

Dependency of tunneling magnetoresistance ratio on Pt seed-layer thickness for double MgO perpendicular magnetic tunneling junction spin-valves with a top Co2Fe6B2 free layer ex-situ annealed at 400 °C.

Science.gov (United States)

Takemura, Yasutaka; Lee, Du-Yeong; Lee, Seung-Eun; Park, Jea-Gun

2016-12-02

For the double MgO based perpendicular magnetic tunneling junction (p-MTJ) spin-valves with a top Co 2 Fe 6 B 2 free layer ex situ annealed at 400 °C, the tunneling-magnetoresistance ratio (TMR) strongly depended on the platinum (Pt) seed layer thickness (t Pt ): it peaked (∼134%) at a specific t Pt (3.3 nm). The TMR ratio was initially and slightly increased from 113%-134% by the enhancement of the magnetic moment of the Co 2 Fe 6 B 2 pinned layer when t Pt increased from 2.0-3.3 nm, and then rapidly decreased from 134%-38.6% by the degrading face-centered-cubic crystallinity of the MgO tunneling barrier when t Pt increased from 3.3-14.3 nm.

Optical-optical double resonance, laser induced fluorescence, and revision of the signs of the spin-spin constants of the boron carbide (BC) free radical

Science.gov (United States)

Sunahori, Fumie X.; Nagarajan, Ramya; Clouthier, Dennis J.

2015-12-01

The cold boron carbide free radical (BC X 4Σ-) has been produced in a pulsed discharge free jet expansion using a precursor mixture of trimethylborane in high pressure argon. High resolution laser induced fluorescence spectra have been obtained for the B 4Σ--X 4Σ- and E 4Π-X 4Σ- band systems of both 11BC and 10BC. An optical-optical double resonance (OODR) scheme was implemented to study the finer details of both band systems. This involved pumping a single rotational level of the B state with one laser and then recording the various allowed transitions from the intermediate B state to the final E state with a second laser by monitoring the subsequent E-X ultraviolet fluorescence. In this fashion, we were able to prove unambiguously that, contrary to previous studies, the spin-spin constant λ is negative in the ground state and positive in the B 4Σ- excited state. It has been shown that λ″ expected based on a semiempirical second order perturbation theory calculation of the magnitude of the spin-spin constant. The OODR spectra have also been used to validate our assignments of the complex and badly overlapped E 4Π-X 4Σ- 0-0 and 1-0 bands of 11BC. The E-X 0-0 band of 10BC was found to be severely perturbed. The ground state main electron configuration is …3σ24σ25σ11π22π0 and the derived bond lengths show that there is a 0.03 Å contraction in the B state, due to the promotion of an electron from the 4σ antibonding orbital to the 5σ bonding orbital. In contrast, the bond length elongates by 0.15 Å in the E state, a result of promoting an electron from the 5σ bonding orbital to the 2π antibonding orbitals.

Impact of spin-orbit density dependent potential in heavy ion reactions forming Se nuclei

Energy Technology Data Exchange (ETDEWEB)

Rajni; Sharma, Ishita; Sharma, Manoj K. [Thapar University, School of Physics and Materials Science, Patiala (India); Jain, Deepika [Mata Gujri College, Department of Physics, Fatehgarh Sahib (India)

2017-10-15

The Skyrme energy density formalism is employed to explore the effect of spin-orbit interaction potential by considering a two nucleon transfer process via various entrance channels such as {sup 23}Na + {sup 49}V, {sup 25}Mg + {sup 47}Ti, {sup 27}Al + {sup 45}Sc, {sup 29}Si + {sup 43}Ca and {sup 31}P + {sup 41}K, all forming the same compound system {sup 72}Se*, using both spherical as well as quadrupole deformed (β{sub 2}) nuclei. For spherical nuclei, the spin-orbit density part V{sub J} of nuclear potential remains unaffected with the transfer of two nucleons from the target to the projectile, however, show notable variation in magnitude after inclusion of deformation effects. Likewise, deformations play an important role in the spin-orbit density independent part V{sub P}, as the fusion pocket start appears, which otherwise diminish for the spherical nuclei. Further, the effect of an increase in the N/Z ratio of Se is explored on V{sub J} as well as V{sub P} and results are compared with transfer channels. In addition to this, the role of double spin-orbit parameters (W{sub 0} and W{sub 0}{sup '}) with relative contribution of the isoscalar and isovector parts of spin-orbit strength is explored in view of SkI2, SkI3 and SkI4 Skyrme forces. Beside this, the decay path of {sup 72}Se* nucleus formed in {sup 27}Al + {sup 45}Sc reaction is investigated within the framework of dynamical cluster decay model (DCM), where the nuclear proximity potential is obtained by both Skyrme energy density formalism (SEDF) and proximity pocket formula. The fusion hindrance in the {sup 27}Al + {sup 45}Sc reaction is also addressed via the barrier lowering parameter ΔV{sub B}. Finally, the contribution of spin-orbit density dependent interaction potential is estimated for the {sup 27}Al + {sup 45}Sc reaction using single (W{sub 0} or W{sub 0}{sup '}) and double spin-orbit parameters (W{sub 0} and W{sub 0}{sup '}). (orig.)

Injection of spin-polarized current into semiconductor

International Nuclear Information System (INIS)

Vedyayev, A.V.; Dieny, B.; Ryzhanova, N.V.; Zhukov, I.V.; Zhuravlev, M.Ye.; Lutz, H.O.

2003-01-01

A quantum-statistical theory of injection of spin-polarized current into a semiconductor in ferromagnet/tunnel barrier/semiconductor system is presented. The presence of Schottky barrier in the semiconductor is taken into account. The case of degenerated and non-degenerated semiconductors are considered. Both the diffusive and ballistic transport regime are investigated. The dependence of current polarization on barrier thickness and temperature is calculated

Spin-dependent electrical transport in Fe-MgO-Fe heterostructures

Directory of Open Access Journals (Sweden)

A A Shokri

2016-09-01

Full Text Available In this paper, spin-dependent electrical transport properties are investigated in a single-crystal magnetic tunnel junction (MTJ which consists of two ferromagnetic Fe electrodes separated by an MgO insulating barrier. These properties contain electric current, spin polarization and tunnel magnetoresistance (TMR. For this purpose, spin-dependent Hamiltonian is described for Δ1 and Δ5 bands in the transport direction. The transmission is calculated by Green's function formalism based on a single-band tight-binding approximation. The transport properties are investigated as a function of the barrier thickness in the limit of coherent tunneling. We have demonstrated that dependence of the TMR on the applied voltage and barrier thickness. Our numerical results may be useful for designing of spintronic devices. The numerical results may be useful in designing of spintronic devices.

Quantum Effects for a Proton in a Low-Barrier, Double-Well Potential: Core Level Photoemission Spectroscopy of Acetylacetone.

Science.gov (United States)

Feyer, Vitaliy; Prince, Kevin C; Coreno, Marcello; Melandri, Sonia; Maris, Assimo; Evangelisti, Luca; Caminati, Walther; Giuliano, Barbara M; Kjaergaard, Henrik G; Carravetta, Vincenzo

2018-02-01

We have performed core level photoemission spectroscopy of gaseous acetylacetone, its fully deuterated form, and two derivatives, benzoylacetone and dibenzoylmethane. These molecules show intramolecular hydrogen bonds, with a proton located in a double-well potential, whose barrier height is different for the three compounds. This has allowed us to examine the effect of the double-well potential on photoemission spectra. Two distinct O 1s core hole peaks are observed, previously assigned to two chemical states of oxygen. We provide an alternative assignment of the double-peak structure of O 1s spectra by taking full account of the extended nature of the wave function associated with the nuclear motion of the proton, the shape of the ground and final state potentials in which the proton is located, and the nonzero temperature of the samples. The peaks are explained in terms of an unusual Franck-Condon factor distribution.

Spin dynamics of the itinerant helimagnet MnSi studied by positive muon spin relaxation

International Nuclear Information System (INIS)

Kadono, R.; Matsuzaki, T.; Yamazaki, T.; Kreitzman, S.R.; Brewer, J.H.

1990-03-01

The local magnetic fields and spin dynamics of the itinerant helimagnet MnSi(T c ≅ 29.5 K) have been studied experimentally using positive muon spin rotation/relaxation (μ + SR) methods. In the ordered phase (T c ), zero-field μSR was used to measure the hyperfine fields at the muon sites as well as the muon spin-lattice relaxation time T 1 μ . Two magnetically inequivalent interstitial μ + sites were found with hyperfine coupling constants A hf (1) = -3.94 kOe/μ B and A hf (2) = -6.94 kOe/μ B , respectively. In the paramagnetic phase (T > T c ), the muon-nuclear spin double relaxation technique was used to simultaneously but independently determine the spin-lattice relaxation time T 1 Mn of 55 Mn spins and that of positive muons (T 1 μ ) over a wide temperature range (T c 1 Mn and T 1 μ in both phases shows systematic deviations from the predictions of self-consistent renormalization (SCR) theory. (author)

Manipulating the voltage dependence of tunneling spin torques

KAUST Repository

Manchon, Aurelien

2012-10-01

Voltage-driven spin transfer torques in magnetic tunnel junctions provide an outstanding tool to design advanced spin-based devices for memory and reprogrammable logic applications. The non-linear voltage dependence of the torque has a direct impact on current-driven magnetization dynamics and on devices performances. After a brief overview of the progress made to date in the theoretical description of the spin torque in tunnel junctions, I present different ways to alter and control the bias dependence of both components of the spin torque. Engineering the junction (barrier and electrodes) structural asymmetries or controlling the spin accumulation profile in the free layer offer promising tools to design effcient spin devices.

Joule heating and spin-transfer torque investigated on the atomic scale using a spin-polarized scanning tunneling microscope.

Science.gov (United States)

Krause, S; Herzog, G; Schlenhoff, A; Sonntag, A; Wiesendanger, R

2011-10-28

The influence of a high spin-polarized tunnel current onto the switching behavior of a superparamagnetic nanoisland on a nonmagnetic substrate is investigated by means of spin-polarized scanning tunneling microscopy. A detailed lifetime analysis allows for a quantification of the effective temperature rise of the nanoisland and the modification of the activation energy barrier for magnetization reversal, thereby using the nanoisland as a local thermometer and spin-transfer torque analyzer. Both the Joule heating and spin-transfer torque are found to scale linearly with the tunnel current. The results are compared to experiments performed on lithographically fabricated magneto-tunnel junctions, revealing a very high spin-transfer torque switching efficiency in our experiments.

Long-term reliable physically unclonable function based on oxide tunnel barrier breakdown on two-transistors two-magnetic-tunnel-junctions cell-based embedded spin transfer torque magnetoresistive random access memory

Science.gov (United States)

Takaya, Satoshi; Tanamoto, Tetsufumi; Noguchi, Hiroki; Ikegami, Kazutaka; Abe, Keiko; Fujita, Shinobu

2017-04-01

Among the diverse applications of spintronics, security for internet-of-things (IoT) devices is one of the most important. A physically unclonable function (PUF) with a spin device (spin transfer torque magnetoresistive random access memory, STT-MRAM) is presented. Oxide tunnel barrier breakdown is used to realize long-term stability for PUFs. A secure PUF has been confirmed by evaluating the Hamming distance of a 32-bit STT-MRAM-PUF fabricated using 65 nm CMOS technology.

Spin polarization at the interface and tunnel magnetoresistance

International Nuclear Information System (INIS)

Itoh, H.; Inoue, J.

2001-01-01

We propose that interfacial states of imperfectly oxidized Al ions may exist in ferromagnetic tunnel junctions with Al-O barrier and govern both the spin polarization and tunnel conductance. It is shown that the spin polarization is positive independent of materials and correlates well with the tunnel magnetoresistance

Polarized-photon frequency filter in double-ferromagnetic barrier silicene junction

Energy Technology Data Exchange (ETDEWEB)

Chantngarm, Peerasak; Yamada, Kou [Domain of Mechanical Science and Technology, Graduate School of Science and Technology, Gunma University, Gunma (Japan); Soodchomshom, Bumned, E-mail: Bumned@hotmail.com [Department of Physics, Faculty of Science, Kasetsart University Bangkok 10900 (Thailand)

2017-05-01

We present an analytical study of effects from circularly polarized light illumination on controlling spin-valley currents in a dual ferromagnetic-gated silicene. Two different perpendicular electric fields are applied into the ferromagnetic (FM) gates and the photo-irradiated normal (NM) area between the gates. One parallel (P) and two anti-parallel (AP) configurations of exchange fields applied along with chemical potential to the gates are used in this investigation. Interestingly, the studied junction might give rise to polarized-photon frequency filter. Spin-valley filtering can be achieved at the off-resonant frequency region with appropriate direction of electric fields and the configuration of exchange fields (AP-1 or AP-2). Under the photo irradiation, this study found that tunneling magnetoresistance (TMR) is controllable to achieve giant magnetoresistance (GMR) by adjusting electric fields or chemical potentials. Our study suggests the potential of photo-sensing devices in spin-valleytronics realm. - Highlights: • Photon-frequency control of spin-valley currents in silicene is investigated. • Complete photon frequency filtering effect is predicted. • Giant magnetoresistance induced by polarized photon is also found. • The junction is applicable for photo-sensing devices in spin-valleytronics realm.

Current-induced spin transfer torque in ferromagnet-marginal Fermi liquid double tunnel junctions

International Nuclear Information System (INIS)

Mu Haifeng; Zheng Qingrong; Jin Biao; Su Gang

2005-01-01

Current-induced spin transfer torque through a marginal Fermi liquid (MFL) which is connected to two noncollinearly aligned ferromagnets via tunnel junctions is discussed in terms of the nonequilibrium Green function method. It is found that in the absence of the spin-flip scattering, the magnitude of the torque increases with the polarization and the coupling constant λ of the MFL, whose maximum increases with λ linearly, showing that the interactions between electrons tend to enhance the spin torque. When the spin-flip scattering is included, an additional spin torque is induced. It is found that the spin-flip scattering enhances the spin torque and gives rise to a nonlinear angular shift

Nuclear spin dynamics in double quantum dots : Fixed points, transients, and intermittency

NARCIS (Netherlands)

Rudner, M.S.; Koppens, F.H.L.; Folk, J.A.; Vandersypen, L.M.K.; Levitov, L.S.

2011-01-01

Transport through spin-blockaded quantum dots provides a means for electrical control and detection of nuclear spin dynamics in the host material. Although such experiments have become increasingly popular in recent years, interpretation of their results in terms of the underlying nuclear spin

Influence of spin on fission fragments anisotropy

Directory of Open Access Journals (Sweden)

Ghodsi Omid N.

2005-01-01

Full Text Available An analysis of selected fission fragment angular distribution when at least one of the spins of the projectile or target is appreciable in induced fission was made by using the statistical scission model. The results of this model predicate that the spins of the projectile or target are affected on the nuclear level density of the compound nucleus. The experimental data was analyzed by means of the couple channel spin effect formalism. This formalism suggests that the projectile spin is more effective on angular anisotropies within the limits of energy near the fusion barrier.

Highly spin-polarized materials and devices for spintronics∗.

Science.gov (United States)

Inomata, Koichiro; Ikeda, Naomichi; Tezuka, Nobuki; Goto, Ryogo; Sugimoto, Satoshi; Wojcik, Marek; Jedryka, Eva

2008-01-01

The performance of spintronics depends on the spin polarization of the current. In this study half-metallic Co-based full-Heusler alloys and a spin filtering device (SFD) using a ferromagnetic barrier have been investigated as highly spin-polarized current sources. The multilayers were prepared by magnetron sputtering in an ultrahigh vacuum and microfabricated using photolithography and Ar ion etching. We investigated two systems of Co-based full-Heusler alloys, Co 2 Cr 1 - x Fe x Al (CCFA( x )) and Co 2 FeSi 1 - x Al x (CFSA( x )) and revealed the structure and magnetic and transport properties. We demonstrated giant tunnel magnetoresistance (TMR) of up to 220% at room temperature and 390% at 5 K for the magnetic tunnel junctions (MTJs) using Co 2 FeSi 0.5 Al 0.5 (CFSA(0.5)) Heusler alloy electrodes. The 390% TMR corresponds to 0.81 spin polarization for CFSA(0.5) at 5 K. We also investigated the crystalline structure and local structure around Co atoms by x-ray diffraction (XRD) and nuclear magnetic resonance (NMR) analyses, respectively, for CFSA films sputtered on a Cr-buffered MgO (001) substrate followed by post-annealing at various temperatures in an ultrahigh vacuum. The disordered structures in CFSA films were clarified by NMR measurements and the relationship between TMR and the disordered structure was discussed. We clarified that the TMR of the MTJs with CFSA(0.5) electrodes depends on the structure, and is significantly higher for L2 1 than B2 in the crystalline structure. The second part of this paper is devoted to a SFD using a ferromagnetic barrier. The Co ferrite is investigated as a ferromagnetic barrier because of its high Curie temperature and high resistivity. We demonstrate the strong spin filtering effect through an ultrathin insulating ferrimagnetic Co-ferrite barrier at a low temperature. The barrier was prepared by the surface plasma oxidization of a CoFe 2 film deposited on a MgO (001) single crystal substrate, wherein the spinel

In search of elementary spin 0 particles

International Nuclear Information System (INIS)

Krasny, Mieczyslaw Witold; Płaczek, Wiesław

2015-01-01

The Standard Model of strong and electroweak interactions uses point-like spin 1/2 particles as the building bricks of matter and point-like spin 1 particles as the force carriers. One of the most important questions to be answered by the present and future particle physics experiments is whether the elementary spin 0 particles exist, and if they do, what are their interactions with the spin 1/2 and spin 1 particles. Spin 0 particles have been searched extensively over the last decades. Several initial claims of their discoveries were finally disproved in the final experimental scrutiny process. The recent observation of the excess of events at the LHC in the final states involving a pair of vector bosons, or photons, is commonly interpreted as the discovery of the first elementary scalar particle, the Higgs boson. In this paper we recall examples of claims and subsequent disillusions in precedent searches spin 0 particles. We address the question if the LHC Higgs discovery can already be taken for granted, or, as it turned out important in the past, whether it requires a further experimental scrutiny before the existence of the first ever found elementary scalar particle is proven beyond any doubt. An example of the Double Drell–Yan process for which such a scrutiny is indispensable is discussed in some detail. - Highlights: • We present a short history of searches of spin 0 particles. • We construct a model of the Double Drell–Yan Process (DDYP) at the LHC. • We investigate the contribution of the DDYP to the Higgs searches background

Conformal bootstrap with slightly broken higher spin symmetry

Energy Technology Data Exchange (ETDEWEB)

Alday, Luis F. [Mathematical Institute, University of Oxford,Andrew Wiles Building, Radcliffe Observatory Quarter,Woodstock Road, Oxford, OX2 6GG (United Kingdom); Zhiboedov, Alexander [Center for the Fundamental Laws of Nature,Harvard University, Cambridge, MA 02138 (United States)

2016-06-16

We consider conformal field theories with slightly broken higher spin symmetry in arbitrary spacetime dimensions. We analyze the crossing equation in the double light-cone limit and solve for the anomalous dimensions of higher spin currents γ{sub s} with large spin s. The result depends on the symmetries and the spectrum of the unperturbed conformal field theory. We reproduce all known results and make further predictions. In particular we make a prediction for the anomalous dimensions of higher spin currents in the 3d Ising model.

An enhanced lumped element electrical model of a double barrier memristive device

International Nuclear Information System (INIS)

Solan, Enver; Ochs, Karlheinz; Dirkmann, Sven; Hansen, Mirko; Kohlstedt, Hermann; Ziegler, Martin; Schroeder, Dietmar; Mussenbrock, Thomas

2017-01-01

The massive parallel approach of neuromorphic circuits leads to effective methods for solving complex problems. It has turned out that resistive switching devices with a continuous resistance range are potential candidates for such applications. These devices are memristive systems—nonlinear resistors with memory. They are fabricated in nanotechnology and hence parameter spread during fabrication may aggravate reproducible analyses. This issue makes simulation models of memristive devices worthwhile. Kinetic Monte-Carlo simulations based on a distributed model of the device can be used to understand the underlying physical and chemical phenomena. However, such simulations are very time-consuming and neither convenient for investigations of whole circuits nor for real-time applications, e.g. emulation purposes. Instead, a concentrated model of the device can be used for both fast simulations and real-time applications, respectively. We introduce an enhanced electrical model of a valence change mechanism (VCM) based double barrier memristive device (DBMD) with a continuous resistance range. This device consists of an ultra-thin memristive layer sandwiched between a tunnel barrier and a Schottky-contact. The introduced model leads to very fast simulations by using usual circuit simulation tools while maintaining physically meaningful parameters. Kinetic Monte-Carlo simulations based on a distributed model and experimental data have been utilized as references to verify the concentrated model. (paper)

Spin-locking and cross-polarization under magic-angle spinning of uniformly labeled solids.

Science.gov (United States)

Hung, Ivan; Gan, Zhehong

2015-07-01

Spin-locking and cross-polarization under magic-angle spinning are investigated for uniformly (13)C and (15)N labeled solids. In particular, the interferences from chemical shift anisotropy, and (1)H heteronuclear and (13)C homonuclear dipolar couplings are identified. The physical origin of these interferences provides guidelines for selecting the best (13)C and (15)N polarization transfer rf fields. Optimal settings for both the zero- and double-quantum cross-polarization transfer mechanisms are recommended. Copyright © 2015 Elsevier Inc. All rights reserved.

Alternating space charge and ambiguity of quantum states in double-barrier structure

International Nuclear Information System (INIS)

Pashkovskij, A.B.

2000-01-01

Solution for nonstationary self-consistent Schroedinger and Poisson equations describing resonance interaction of electrons tunneled through asymmetric double-barrier structures with a high-frequency electric field was obtained by summing perturbation theory series. In case of uniform distribution of electrons by energy the solution is obtained analytically, whereas in case of monoenergy beam, it is reduced to finding the roots of power five algebraic polynomial. It is shown that in some cases the influence of spatial charge gives rise to quite a new effect for the systems: several different electron wave functions will correspond to the same amplitude of high-frequency voltage applied to the structure and, accordingly, the values of high-frequency conductivity, transmission and reflection factors may differ by several times. As a result, instability of current transmission and hysteresis of volt-ampere characteristics may be observed in the structures [ru

Spin transport at high temperatures in epitaxial Heusler alloy/n-GaAs lateral spin valves

Science.gov (United States)

Peterson, Timothy A.; Christie, Kevin D.; Patel, Sahil J.; Crowell, Paul A.; Palmstrøm, Chris J.

2015-03-01

We report on electrical injection and detection of spin accumulation in ferromagnet/ n-GaAs lateral spin-valve devices, observed up to and above room temperature. The ferromagnet in these measurements is the Heusler alloy Co2FeSi, and the semiconductor channel is GaAs doped at 3 ×1016 cm-3. The spin signal is enhanced by operating the detection contact under forward bias. The enhancement originates from drift effects at low-temperatures and an increase of the detection efficiency at all temperatures. The detector bias dependence of the observed spin-valve signal is interpreted by taking into account the quantum well (QW) which forms in the degenerately doped region immediately behind the Schottky tunnel barrier. In particular, we believe the QW is responsible for the minority spin accumulation (majority spin current) under large forward bias. The spin diffusion length and lifetime are determined by measuring the separation dependence of the non-local spin valve signal in a family of devices patterned by electron beam lithography. A spin diffusion length of 700 nm and lifetime of 46 picoseconds are found at a temperature of 295 K. This work was supported by the NSF under DMR-1104951, the NSF MRSEC program and C-SPIN, a SRC STARNET center sponsored by MARCO and DARPA.

Effect of graphene tunnel barrier on Schottky barrier height of Heusler alloy Co2MnSi/graphene/n-Ge junction

International Nuclear Information System (INIS)

Li Gui-fang; Hu Jing; Lv Hui; Cui Zhijun; Hou Xiaowei; Liu Shibin; Du Yongqian

2016-01-01

We demonstrate that the insertion of a graphene tunnel barrier between Heusler alloy Co 2 MnSi and the germanium (Ge) channel modulates the Schottky barrier height and the resistance–area product of the spin diode. We confirm that the Fermi level is depinned and a reduction in the electron Schottky barrier height (SBH) occurs following the insertion of the graphene layer between Co 2 MnSi and Ge. The electron SBH is modulated in the 0.34 eV–0.61 eV range. Furthermore, the transport mechanism changes from rectifying to symmetric tunneling following the insertion. This behavior provides a pathway for highly efficient spin injection from a Heusler alloy into a Ge channel with high electron and hole mobility. (paper)

Spin-flip tunneling in quantum dots

Energy Technology Data Exchange (ETDEWEB)

Schreiber, Lars; Braakman, Floris; Meunier, Tristan; Calado, Victor; Vandersypen, Lieven [Kavli Institute of NanoScience, Delft (Netherlands); Wegscheider, Werner [Institute for Experimental and Applied Physics, University of Regensburg (Germany)

2010-07-01

Electron spins in a gate-defined double quantum dot formed in a GaAs/(Al,Ga)As 2DEG are promising candidates for quantum information processing as coherent single spin rotation and spin swap has been demonstrated recently. In this system we investigate the two-electron spin dynamics in the presence of microwaves (5.20 GHz) applied to one side gate. During microwave excitation we observe characteristic photon assisted tunneling (PAT) peaks at the (1,1) to (0,2) charge transition. Some of the PAT peaks are attributed to photon tunneling events between the singlet S(0,2) and the singlet S(1,1) states, a spin-conserving transition. Surprisingly, other PAT peaks stand out by their different external magnetic field dependence. They correspond to tunneling involving a spin-flip, from the (0,2) singlet to a (1,1) triplet. The full spectrum of the observed PAT lines is captured by simulations. This process offers novel possibilities for 2-electron spin manipulation and read-out.

Spin-injection into epitaxial graphene on silicon carbide

Science.gov (United States)

Konishi, Keita; Cui, Zhixin; Hiraki, Takahiro; Yoh, Kanji

2013-09-01

We have studied the spin-injection properties in epitaxial graphene on SiC. The ferromagnetic metal (FM) electrodes were composed of a tunnel barrier layer AlOx (14 Å) and a ferromagnetic Co (600 Å) layer. We have successfully observed the clear resistance peaks indicating spin-injection both in the "local" and "non-local" spin measurement set-ups at low temperatures. We estimate spin-injection rate of 1% based on "non-local" measurement and 1.6% based on local measurements. Spin-injection rate of multilayer graphene by mechanical exfoliation method was twice as high as single layer graphene on SiC based on "local" measurement.

Enhanced spin accumulation in Fe3O4 based spin injection devices below the Verwey transition

Science.gov (United States)

Bhat, Shwetha G.; Kumar, P. S. Anil

2016-12-01

Spin injection into GaAs and Si (both n and p-type) semiconductors using Fe3O4 is achieved with and without a tunnel barrier (MgO) via three-terminal electrical Hanle measurement. Interestingly, the magnitude of spin accumulation voltage (ΔV) in semiconductor is found to be associated with a drastic increment in ΔV in Fe3O4 based devices for temperature metal-to-insulator transition of Fe3O4 at T V. Observations from our elaborate investigations show that spin polarization of Fe3O4 has an explicit influence on the enhanced spin injection. It is argued that the theoretical prediction of half-metallicity of Fe3O4 above and below T V has to be reinvestigated.

Spin dynamics and Kondo physics in optical tweezers

Science.gov (United States)

Lin, Yiheng; Lester, Brian J.; Brown, Mark O.; Kaufman, Adam M.; Long, Junling; Ball, Randall J.; Isaev, Leonid; Wall, Michael L.; Rey, Ana Maria; Regal, Cindy A.

2016-05-01

We propose to use optical tweezers as a toolset for direct observation of the interplay between quantum statistics, kinetic energy and interactions, and thus implement minimum instances of the Kondo lattice model in systems with few bosonic rubidium atoms. By taking advantage of strong local exchange interactions, our ability to tune the spin-dependent potential shifts between the two wells and complete control over spin and motional degrees of freedom, we design an adiabatic tunneling scheme that efficiently creates a spin-singlet state in one well starting from two initially separated atoms (one atom per tweezer) in opposite spin state. For three atoms in a double-well, two localized in the lowest vibrational mode of each tweezer and one atom in an excited delocalized state, we plan to use similar techniques and observe resonant transfer of two-atom singlet-triplet states between the wells in the regime when the exchange coupling exceeds the mobile atom hopping. Moreover, we argue that such three-atom double-tweezers could potentially be used for quantum computation by encoding logical qubits in collective spin and motional degrees of freedom. Current address: Department of Physics, Harvard University, Cambridge, Massachusetts 02138, USA.

Optical-optical double resonance, laser induced fluorescence, and revision of the signs of the spin-spin constants of the boron carbide (BC) free radical

Energy Technology Data Exchange (ETDEWEB)

Sunahori, Fumie X. [Department of Chemistry and Physics, Franklin College, Franklin, Indiana 46131 (United States); Nagarajan, Ramya; Clouthier, Dennis J., E-mail: dclaser@uky.edu [Department of Chemistry, University of Kentucky, Lexington, Kentucky 40506-0055 (United States)

2015-12-14

The cold boron carbide free radical (BC X {sup 4}Σ{sup −}) has been produced in a pulsed discharge free jet expansion using a precursor mixture of trimethylborane in high pressure argon. High resolution laser induced fluorescence spectra have been obtained for the B {sup 4}Σ{sup −}–X {sup 4}Σ{sup −} and E {sup 4}Π–X {sup 4}Σ{sup −} band systems of both {sup 11}BC and {sup 10}BC. An optical-optical double resonance (OODR) scheme was implemented to study the finer details of both band systems. This involved pumping a single rotational level of the B state with one laser and then recording the various allowed transitions from the intermediate B state to the final E state with a second laser by monitoring the subsequent E–X ultraviolet fluorescence. In this fashion, we were able to prove unambiguously that, contrary to previous studies, the spin-spin constant λ is negative in the ground state and positive in the B {sup 4}Σ{sup −} excited state. It has been shown that λ″ < 0 is in fact expected based on a semiempirical second order perturbation theory calculation of the magnitude of the spin-spin constant. The OODR spectra have also been used to validate our assignments of the complex and badly overlapped E {sup 4}Π–X {sup 4}Σ{sup −} 0-0 and 1-0 bands of {sup 11}BC. The E–X 0-0 band of {sup 10}BC was found to be severely perturbed. The ground state main electron configuration is …3σ{sup 2}4σ{sup 2}5σ{sup 1}1π{sup 2}2π{sup 0} and the derived bond lengths show that there is a 0.03 Å contraction in the B state, due to the promotion of an electron from the 4σ antibonding orbital to the 5σ bonding orbital. In contrast, the bond length elongates by 0.15 Å in the E state, a result of promoting an electron from the 5σ bonding orbital to the 2π antibonding orbitals.

Study of γ-irradiated lithographic polymers by electron spin resonance and electron nuclear double resonance

International Nuclear Information System (INIS)

Schlick, S.; Kevan, L.

1982-01-01

The room temperature gamma irradiation degradation of the lithographic polymers, poly(methylmethacrylate) (PMMA), poly(methyl-α-chloroacrylate) (PMCA), poly(methyl-α-fluoroacrylate) (PMFA), and poly(methylacrylonitrile) (PMCN), have been studied by electron spin resonance and electron nuclear double resonance (ENDOR) to assess their molecular degradation processes of relevance to electron beam lithography. Two classes of radicals are found, chain radicals and chain scission radicals. PMMA and PMCA mainly form chain scission radicals consistent with degradation while for PMCN the resolution is poorer, and this is only probable. PMFA forms mainly chain radicals consistent with predominant crosslinking. The total radical yield is greatest in PMCA and PMCN. ENDOR is used to assess the compactness of the radiation degradation region for PMMA and PMCA and hence the potential resolution of the resist; this appears to be about the same for these methacrylate polymers

Effects on spin asymmetries of special effects at 900

International Nuclear Information System (INIS)

Lipkin, H.J.

1986-01-01

Hadron and quark exchange contributions to spin symmetries at 90 0 in hadron elastic scattering are investigated. The angular distribution of scattering cross sections is considered for incident protons with contributions from nonflip and double-flip amplitudes for states of parallel and antiparallel spins. 5 refs

Stern-Gerlach experiment, electron spin and intermediate quantum mechanics

Energy Technology Data Exchange (ETDEWEB)

Mackintosh, A.R. (Copenhagen Univ. (Denmark). H.C. Oersted Inst.)

1983-01-01

The paper deals with the theory of electron spin. The Stern-Gerlach experiment, the anticommutation relations and the properties of spin operators are discussed. The Pauli theory, Dirac transformation theory, the double Stern-Gerlach experiment, the EPR paradox and Bell's inequality are also covered.

High-performance 4H-SiC junction barrier Schottky diodes with double resistive termination extensions

International Nuclear Information System (INIS)

Zheng Liu; Zhang Feng; Liu Sheng-Bei; Dong Lin; Liu Xing-Fang; Liu Bin; Yan Guo-Guo; Wang Lei; Zhao Wan-Shun; Sun Guo-Sheng; He Zhi; Fan Zhong-Chao; Yang Fu-Hua

2013-01-01

4H-SiC junction barrier Schottky (JBS) diodes with a high-temperature annealed resistive termination extension (HARTE) are designed, fabricated and characterized in this work. The differential specific on-state resistance of the device is as low as 3.64 mΩ·cm 2 with a total active area of 2.46 × 10 −3 cm 2 . Ti is the Schottky contact metal with a Schottky barrier height of 1.08 V and a low onset voltage of 0.7 V. The ideality factor is calculated to be 1.06. Al implantation annealing is performed at 1250°C in Ar, while good reverse characteristics are achieved. The maximum breakdown voltage is 1000 V with a leakage current of 9 × 10 −5 A on chip level. These experimental results show good consistence with the simulation results and demonstrate that high-performance 4H-SiC JBS diodes can be obtained based on the double HARTE structure. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

Charge confinements in CdSe-ZnSe symmetric double quantum wells

International Nuclear Information System (INIS)

Tit, Nacir; Obaidat, Ihab M

2008-01-01

The bound states in the (CdSe) N w (ZnSe) N b (CdSe) N w -ZnSe(001) symmetric double quantum wells are investigated versus the well width (N w ) and the barrier thickness (N b ). A calculation based on the sp 3 s * tight-binding method which includes the spin-orbit interactions is employed to calculate the bandgap energy, quantum-confinement energy, and band structures. The studied systems possess a vanishing valence-band offset (VBO = 0) in consistency with the well known common-anion rule, and a large conduction-band offset (CBO ≅ 1 eV), which plays an essential role in the confinement of electrons within the CdSe wells. The biaxial strain, on the other hand, plays another role in confining the holes at the interfaces (within the well regions) and thus enhancing the radiative efficiency. The induced-strain energy is estimated to be ∼35 meV. More importantly, the results show that, for a fixed barrier thickness, the double wells are able to confine a pair of bound states when they are very thin. By increasing the wells' width (N w ), further, a new pair of states from the conduction-band continuum falls into the wells every time N w hits a multiple of four monolayers (more specifically, for 4n w ≤4(n+1), the number of bound states is 2(n+1), where n is an integer). On the other hand, the barrier thickness (N b ) is shown to have no effect on the number of bound states, but it solely controls their well-to-well interactions. A critical barrier thickness to switch off these latter interactions is estimated to occur at about N crit b ≅ 9 (L crit b ≅ 25∼AA. Rules governing the variation of the quantum-confinement energy versus both barrier thickness (N b ) and well width (N w ) have been derived. Our theoretical results are also shown to have excellent agreement with the available experimental photoluminescence data

Spin transport in diffusive ferromagnetic Josephson junctions with noncollinear magnetization

Energy Technology Data Exchange (ETDEWEB)

Shomali, Zahra; Zareyan, Malek [Institute for Advanced Studies in Basic Sciences (IASBS), Zanjan 45195 (Iran, Islamic Republic of); Belzig, Wolfgang [Fachbereich Physik, Universitaet Konstanz, D-78457 Konstanz (Germany)

2011-07-01

We numerically study the Josephson coupling of two s-wave superconductors which are connected through a diffusive contact made of two ferromagnetic domains with the magnetization vectors misoriented by an angle {theta}. The assumed superconducting leads are conventional s-wave type with the phase difference of {phi}. Using the quantum circuit theory, we find that in addition to the charge supercurrent, which shows a 0-{pi} transition relative to the angle {theta}, the spin supercurrent with a spin polarization normal to the magnetization vectors will flow through the contact. Our results present a 0-{pi} quantum phase transition as a function of the wave vector, Q{xi}. Finally, we investigate the spin supercurrent in an extended magnetic texture with multiple domain walls. We find the behavior of spin supercurrent is highly sensitive to the barrier. When asymmetric barriers don't change the value of the spin supercurrent, the symmetric ones decrease the value of it notably. We also investigate some other interesting effects for these systems. In addition, we present when Q{xi} is the even multiple of {pi}, the spin-current which is penetrated into the nonhomogeneous ferromagnets is nearly zero, how ever the odd ones show the large amount of penetrated spin supercurrent.

Centrifugal spinning: A novel approach to fabricate porous carbon fibers as binder-free electrodes for electric double-layer capacitors

Science.gov (United States)

Lu, Yao; Fu, Kun; Zhang, Shu; Li, Ying; Chen, Chen; Zhu, Jiadeng; Yanilmaz, Meltem; Dirican, Mahmut; Zhang, Xiangwu

2015-01-01

Carbon nanofibers (CNFs), among various carbonaceous candidates for electric double-layer capacitor (EDLC) electrodes, draw extensive attention because their one-dimensional architecture offers both shortened electron pathways and high ion-accessible sites. Creating porous structures on CNFs yields larger surface area and enhanced capacitive performance. Herein, porous carbon nanofibers (PCNFs) were synthesized via centrifugal spinning of polyacrylonitrile (PAN)/poly(methyl methacrylate) (PMMA) solutions combined with thermal treatment and were used as binder-free EDLC electrodes. Three precursor fibers with PAN/PMMA weight ratios of 9/1, 7/3 and 5/5 were prepared and carbonized at 700, 800, and 900 °C, respectively. The highest specific capacitance obtained was 144 F g-1 at 0.1 A g-1 with a rate capability of 74% from 0.1 to 2 A g-1 by PCNFs prepared with PAN/PMMA weight ratio of 7/3 at 900 °C. These PCNFs also showed stable cycling performance. The present work demonstrates that PCNFs are promising EDLC electrode candidate and centrifugal spinning offers a simple, cost-effective strategy to produce PCNFs.

Charge transport in 2DEG/s-wave superconductor junction with Dresselhaus-type spin-orbit coupling

International Nuclear Information System (INIS)

Sawa, Y.; Yokoyama, T.; Tanaka, Y.

2007-01-01

We study spin-dependent charge transport in superconducting junctions. We consider ballistic two-dimensional electron gas (2DEG)/s-wave superconductor junctions with Dresselhaus-type spin-orbit coupling (DSOC). We calculate the conductance normalized by that in the normal state of superconductor in order to study the effect of DSOC in 2DEG on conductance, changing the height of insulating barrier. We find the DSOC suppresses the conductance for low insulating barrier, while it can slightly enhance the conductance for high insulating barrier. It has a reentrant dependence on DSOC for middle strength insulating barrier. The effect of DSOC is weaken as the insulating barrier becomes high

Exactly solvable spin-1 Ising–Heisenberg diamond chain with the second-neighbor interaction between nodal spins

International Nuclear Information System (INIS)

Hovhannisyan, V V; Ananikian, N S; Strečka, J

2016-01-01

The spin-1 Ising–Heisenberg diamond chain with the second-neighbor interaction between nodal spins is rigorously solved using the transfer-matrix method. In particular, exact results for the ground state, magnetization process and specific heat are presented and discussed. It is shown that further-neighbor interaction between nodal spins gives rise to three novel ground states with a translationally broken symmetry, but at the same time, does not increases the total number of intermediate plateaus in a zero-temperature magnetization curve compared with the simplified model without this interaction term. The zero-field specific heat displays interesting thermal dependencies with a single- or double-peak structure. (paper)

Development of CdTe/Cd{sub 1-x}Mg{sub x}Te double barrier, single quantum well heterostructure for resonant tunneling

Energy Technology Data Exchange (ETDEWEB)

Reuscher, G.; Keim, M.; Fischer, F.; Waag, A.; Landwehr, G. [Physikalishes Institut der Universitaet Wuerzburg am Hubland, Wuerzburg (Germany)

1995-12-31

We report the first observation of resonant tunneling through a CdTe/Cd{sub 1-x}Mg{sub x}Te double barrier, single quantum well heterostructure. Negative differential resistance is observable at temperatures below 230 K, exhibiting a peak to valley ratio of 3:1 at 4.2 K. (author). 16 refs, 2 figs.

Determination of the Schottky barrier height of ferromagnetic contacts to few-layer phosphorene

Energy Technology Data Exchange (ETDEWEB)

Anugrah, Yoska; Robbins, Matthew C.; Koester, Steven J. [Department of Electrical and Computer Engineering, University of Minnesota-Twin Cities, Minneapolis, Minnesota 55455 (United States); Crowell, Paul A. [School of Physics and Astronomy, University of Minnesota-Twin Cities, Minneapolis, Minnesota 55455 (United States)

2015-03-09

Phosphorene, the 2D analogue of black phosphorus, is a promising material for studying spin transport due to its low spin-orbit coupling and its ½ nuclear spin, which could allow the study of hyperfine effects. In this work, the properties of permalloy (Py) and cobalt (Co) contacts to few-layer phosphorene are presented. The Schottky barrier height was extracted and determined as a function of gate bias. Flat-band barrier heights, relative to the valence band edge, of 110 meV and 200 meV were determined for Py and Co, respectively. These results are important for future studies of spin transport in phosphorene.

Measurement of the G double-polarisation observable in pion photoproduction

International Nuclear Information System (INIS)

McAndrew, J.; Watts, D.; Pasyuk, E.

2012-01-01

The g9a experiment using the CLAS detector in Hall B of Jefferson Lab will measure double-polarization observables using a polarized energy-tagged photon beam in conjunction with the frozen spin target, FROST. This contribution describes the extraction of the G double polarization observable in the single pion photoproduction using a linearly polarized photon beam in the energy range 730-2300 MeV and the longitudinally polarized frozen spin target, FROST.

Fluctuations in Schottky barrier heights

International Nuclear Information System (INIS)

Mahan, G.D.

1984-01-01

A double Schottky barrier is often formed at the grain boundary in polycrystalline semiconductors. The barrier height is shown to fluctuate in value due to the random nature of the impurity positions. The magnitude of the fluctuations is 0.1 eV, and the fluctuations cause the barrier height measured by capacitance to differ from the one measured by electrical conductivity

Negative tunnel magnetoresistance and spin transport in ferromagnetic graphene junctions

International Nuclear Information System (INIS)

Zou Jianfei; Jin Guojun; Ma Yuqiang

2009-01-01

We study the tunnel magnetoresistance (TMR) and spin transport in ferromagnetic graphene junctions composed of ferromagnetic graphene (FG) and normal graphene (NG) layers. It is found that the TMR in the FG/NG/FG junction oscillates from positive to negative values with respect to the chemical potential adjusted by the gate voltage in the barrier region when the Fermi level is low enough. Particularly, the conventionally defined TMR in the FG/FG/FG junction oscillates periodically from a positive to negative value with increasing the barrier height at any Fermi level. The spin polarization of the current through the FG/FG/FG junction also has an oscillating behavior with increasing barrier height, whose oscillating amplitude can be modulated by the exchange splitting in the ferromagnetic graphene.

Negative tunnel magnetoresistance and spin transport in ferromagnetic graphene junctions.

Science.gov (United States)

Zou, Jianfei; Jin, Guojun; Ma, Yu-Qiang

2009-03-25

We study the tunnel magnetoresistance (TMR) and spin transport in ferromagnetic graphene junctions composed of ferromagnetic graphene (FG) and normal graphene (NG) layers. It is found that the TMR in the FG/NG/FG junction oscillates from positive to negative values with respect to the chemical potential adjusted by the gate voltage in the barrier region when the Fermi level is low enough. Particularly, the conventionally defined TMR in the FG/FG/FG junction oscillates periodically from a positive to negative value with increasing the barrier height at any Fermi level. The spin polarization of the current through the FG/FG/FG junction also has an oscillating behavior with increasing barrier height, whose oscillating amplitude can be modulated by the exchange splitting in the ferromagnetic graphene.

Hole spin coherence in a Ge/Si heterostructure nanowire

DEFF Research Database (Denmark)

Higginbotham, Andrew P; Larsen, Thorvald Wadum; Yao, Jun

2014-01-01

Relaxation and dephasing of hole spins are measured in a gate-defined Ge/Si nanowire double quantum dot using a fast pulsed-gate method and dispersive readout. An inhomogeneous dephasing time T2(*)≈ 0.18 μs exceeds corresponding measurements in III-V semiconductors by more than an order of magnit......Relaxation and dephasing of hole spins are measured in a gate-defined Ge/Si nanowire double quantum dot using a fast pulsed-gate method and dispersive readout. An inhomogeneous dephasing time T2(*)≈ 0.18 μs exceeds corresponding measurements in III-V semiconductors by more than an order...

Conductance in double quantum well systems

International Nuclear Information System (INIS)

Hasbun, J E

2003-01-01

The object of this paper is to review the electronic conductance in double quantum well systems. These are quantum well structures in which electrons are confined in the z direction by large band gap material barrier layers, yet form a free two-dimensional Fermi gas within the sandwiched low band gap material layers in the x-y plane. Aspects related to the conductance in addition to the research progress made since the inception of such systems are included. While the review focuses on the tunnelling conductance properties of double quantum well devices, the longitudinal conductance is also discussed. Double quantum well systems are a more recent generation of structures whose precursors are the well known double-barrier resonant tunnelling systems. Thus, they have electronic signatures such as negative differential resistance, in addition to resonant tunnelling, whose behaviours depend on the wavefunction coupling between the quantum wells. As such, the barrier which separates the quantum wells can be tailored in order to provide better control of the device's electronic properties over their single well ancestors. (topical review)

Proton form factor ratio, μ_pG_E^P/G_M^P from double spin asymmetry

Energy Technology Data Exchange (ETDEWEB)

Habarakada Liyanage, Anusha Pushpakumari [Hampton Univ., Hampton, VA (United States)

2013-08-01

The form factors are fundamental properties of the nucleon representing the effect of its structure on its response to electromagnetic probes such as electrons. They are functions of the four-momentum transfer squared Q² between the electron and the proton. This thesis reports the results of a new measurement of the ratio of the electric and magnetic form factors of the proton up to Q² = 5.66 (GeV/c)² using the double spin asymmetry with a polarized beam and target. Experiment E07-003 (SANE, Spin Asymmetries of the Nucleon Experiment) was carried out in Hall C at Jefferson Lab in 2009 to study the proton spin structure functions with a dynamically polarized ammonia target and longitudinally polarized electron beam. By detecting elastically scattered protons in the High-Momentum Spectrometer (HMS) in coincidence with the electrons in the Big Electron Telescope Array (BETA), elastic measurements were carried out in parallel. The elastic double spin asymmetry allows one to extract the proton electric to magnetic form factor ratio G^p_E/G^p_M at high-momentum transfer, Q²= 5.66 (GeV/c)². In addition to the coincidence data, inclusively scattered electrons from the polarized ammonia target were detected by HMS, which allows to measure the beam-target asymmetry in the elastic region with the target spin nearly perpendicular to the momentum transfer, and to extract G^p_E/G^p_M at low Q²= 2.06 (GeV/c)². This alternative measurement of G^p_E/G^p_M has verified and confirmed the dramatic discrepancy at high Q² between the Rosenbluth and the recoil-polarization-transfer iv method with a different measurement technique and systematic uncertainties uncorrelated to those of the recoil-polarization measurements. The measurement of the form factor ratio at Q² = 2

Superconductivity and spin gap in the zigzag-chain t-J model simulating a CuO double chain in Pr2Ba4Cu7O15-δ

International Nuclear Information System (INIS)

Sano, Kazuhiro; Ono, Yoshiaki

2007-01-01

Using the numerical diagonalization method, we examine the one-dimensional t 1 -t 2 -J 1 -J 2 model (zigzag-chain t-J model) which is an effective model for metallic CuO double chains in the super-conductor Pr 2 Ba 4 Cu 7 O 15-δ . Based on the Tomonaga-Luttinger liquid theory, we calculate the Luttinger liquid parameter K ρ as a function of the electron density n. It is found that superconductivity is realized in the parameter region, which is in accordance with experimental results. We show the phase diagram of a spin gap in the t 2 /|t 1 |-n plane by analyzing the expectation value of the twist operator Z σ in the spin sector. The spin gap appears in the region with a large t 2 /|t 1 |, where the phase boundary at half filling is consistent with that of the known frustrated quantum spin system. The analysis also suggests that the estimated value of the spin gap reaches ∼100 K in the realistic parameter region of Pr 2 Ba 4 Cu 7 O 15-δ . (author)

Controlling the efficiency of spin injection into graphene by carrier drift

NARCIS (Netherlands)

Jozsa, C.; Popinciuc, M.; Tombros, N.; Jonkman, H. T.; van Wees, B. J.

Electrical spin injection from ferromagnetic metals into graphene is hindered by the impedance mismatch between the two materials. This problem can be reduced by the introduction of a thin tunnel barrier at the interface. We present room-temperature nonlocal spin valve measurements in

The Stern-Gerlach experiment, electron spin and intermediate quantum mechanics

International Nuclear Information System (INIS)

Mackintosh, A.R.

1983-01-01

The paper deals with the theory of electron spin. The Stern-Gerlach experiment, the anticommutation relations and the properties of spin operators are discussed. The Pauli theory, Dirac transformation theory, the double Stern-Gerlach experiment, the EPR paradox and Bell's inequality are also covered. (U.K.)

Spin foam propagator: A new perspective to include the cosmological constant

Science.gov (United States)

Han, Muxin; Huang, Zichang; Zipfel, Antonia

2018-04-01

In recent years, the calculation of the first nonvanishing order of the metric 2-point function or graviton propagator in a semiclassical limit has evolved as a standard test for the credibility of a proposed spin foam model. The existing results of spin foam graviton propagators rely heavily on the so-called double scaling limit where spins j are large and the Barbero-Immirzi parameter γ is small such that the area A ∝j γ is approximately constant. However, it seems that this double scaling limit is bound to break down in models including a cosmological constant. We explore this in detail for the recently proposed model [7 H. M. Haggard, M. Han, W. Kaminski, and A. Riello, Nucl. Phys. B900, 1 (2015), 10.1016/j.nuclphysb.2015.08.023.] by Haggard, Han, Kaminski, and Riello and discuss alternative definitions of a graviton propagator, in which the double scaling limit can be avoided.

Quantum Spin Transport in Mesoscopic Interferometer

Directory of Open Access Journals (Sweden)

Zein W. A.

2007-10-01

Full Text Available Spin-dependent conductance of ballistic mesoscopic interferometer is investigated. The quantum interferometer is in the form of ring, in which a quantum dot is embedded in one arm. This quantum dot is connected to one lead via tunnel barrier. Both Aharonov- Casher and Aharonov-Bohm e ects are studied. Our results confirm the interplay of spin-orbit coupling and quantum interference e ects in such confined quantum systems. This investigation is valuable for spintronics application, for example, quantum information processing.

Spin-flip processes in low-energy Fe17+ + He collisions

International Nuclear Information System (INIS)

Bruch, R.; Altick, P.L.; Rauscher, E.; Wang, H.; Schneider, D.

1993-01-01

Spin-nonconserving electron transfer processes violating the ''Wigner rule'' have been studied for slow multiply charged ion-atom collisions. Experimentally a strong population of highly metastable sodium-like quartet states in low energy Fe 17+ + He single collision events has been observed. The possibility of double-electron capture plus spin-flip mechanisms has been discussed experimentally and theoretically, Our theoretical model using time dependent perturbation theory predicts that spin-flip processes are as likely as no spin flip under the conditions of our experiment

Spin filter effect of hBN/Co detector electrodes in a 3D topological insulator spin valve

Science.gov (United States)

Vaklinova, Kristina; Polyudov, Katharina; Burghard, Marko; Kern, Klaus

2018-03-01

Topological insulators emerge as promising components of spintronic devices, in particular for applications where all-electrical spin control is essential. While the capability of these materials to generate spin-polarized currents is well established, only very little is known about the spin injection/extraction into/out of them. Here, we explore the switching behavior of lateral spin valves comprising the 3D topological insulator Bi2Te2Se as channel, which is separated from ferromagnetic Cobalt detector contacts by an ultrathin hexagonal boron nitride (hBN) tunnel barrier. The corresponding contact resistance displays a notable variation, which is correlated with a change of the switching characteristics of the spin valve. For contact resistances below ~5 kΩ, the hysteresis in the switching curve reverses upon reversing the applied current, as expected for spin-polarized currents carried by the helical surface states. By contrast, for higher contact resistances an opposite polarity of the hysteresis loop is observed, which is independent of the current direction, a behavior signifying negative spin detection efficiency of the multilayer hBN/Co contacts combined with bias-induced spin signal inversion. Our findings suggest the possibility to tune the spin exchange across the interface between a ferromagnetic metal and a topological insulator through the number of intervening hBN layers.

CURRENT DRIVE AND PRESSURE PROFILE MODIFICATION WITH ELECTRON CYCLOTRON POWER IN DIII-D QUIESCENT DOUBLE BARRIER EXPERIMENTS

International Nuclear Information System (INIS)

CASPER, TA; BURRELL, KH; DOYLE, EJ; GOHIL, P; GREENFIELD, CM; GROEBNER, RJ; JAYAKUMAR, RJ; MAKOWSKI, MA; RHODES, TL; WEST, WP

2003-01-01

OAK-B135 High confinement mode (H-mode) operation is a leading scenario for burning plasma devices due to its inherently high energy-confinement characteristics. The quiescent H-mode (QH-mode) offers these same advantages with the additional attraction of more steady edge conditions where the highly transient power loads due to edge localized mode (ELM) activity is replaced by the steadier power and particle losses associated with an edge harmonic oscillation (EHO). With the addition of an internal transport barrier (ITB), the capability is introduced for independent control of both the edge conditions and the core confinement region giving potential control of fusion power production for an advanced tokamak configuration. The quiescent double barrier (QDB) conditions explored in DIII-D experiments exhibit these characteristics and have resulted in steady plasma conditions for several confinement times (∼ 26 τ E ) with moderately high stored energy, β N H 89 ∼ 7 for 10 τ E

Spin relaxation in quantum dots due to electron exchange with leads.

Science.gov (United States)

Vorontsov, A B; Vavilov, M G

2008-11-28

We calculate spin relaxation rates in lateral quantum dot systems due to electron exchange between dots and leads. Using rate equations, we develop a theoretical description of the experimentally observed electric current in the spin blockade regime of double quantum dots. A single expression fits the entire current profile and describes the structure of both the conduction peaks and the suppressed ("valley") region. Extrinsic rates calculated here have to be taken into account for accurate extraction of intrinsic relaxation rates due to the spin-orbit and hyperfine spin scattering mechanisms from spin blockade measurements.

Precision Measurement of the Longitudinal Double-Spin Asymmetry for Inclusive Jet Production in Polarized Proton Collisions at √{s }=200 GeV

Science.gov (United States)

Adamczyk, L.; Adkins, J. K.; Agakishiev, G.; Aggarwal, M. M.; Ahammed, Z.; Alekseev, I.; Alford, J.; Anson, C. D.; Aparin, A.; Arkhipkin, D.; Aschenauer, E. C.; Averichev, G. S.; Banerjee, A.; Beavis, D. R.; Bellwied, R.; Bhasin, A.; Bhati, A. K.; Bhattarai, P.; Bichsel, H.; Bielcik, J.; Bielcikova, J.; Bland, L. C.; Bordyuzhin, I. G.; Borowski, W.; Bouchet, J.; Brandin, A. V.; Brovko, S. G.; Bültmann, S.; Bunzarov, I.; Burton, T. P.; Butterworth, J.; Caines, H.; Calderón de la Barca Sánchez, M.; Campbell, J. M.; Cebra, D.; Cendejas, R.; Cervantes, M. C.; Chaloupka, P.; Chang, Z.; Chattopadhyay, S.; Chen, H. F.; Chen, J. H.; Chen, L.; Cheng, J.; Cherney, M.; Chikanian, A.; Christie, W.; Chwastowski, J.; Codrington, M. J. M.; Contin, G.; Cramer, J. G.; Crawford, H. J.; Cudd, A. B.; Cui, X.; Das, S.; Davila Leyva, A.; De Silva, L. C.; Debbe, R. R.; Dedovich, T. G.; Deng, J.; Derevschikov, A. A.; Derradi de Souza, R.; Dhamija, S.; di Ruzza, B.; Didenko, L.; Dilks, C.; Ding, F.; Djawotho, P.; Dong, X.; Drachenberg, J. L.; Draper, J. E.; Du, C. M.; Dunkelberger, L. E.; Dunlop, J. C.; Efimov, L. G.; Engelage, J.; Engle, K. S.; Eppley, G.; Eun, L.; Evdokimov, O.; Eyser, O.; Fatemi, R.; Fazio, S.; Fedorisin, J.; Filip, P.; Finch, E.; Fisyak, Y.; Flores, C. E.; Gagliardi, C. A.; Gangadharan, D. R.; Garand, D.; Geurts, F.; Gibson, A.; Girard, M.; Gliske, S.; Greiner, L.; Grosnick, D.; Gunarathne, D. S.; Guo, Y.; Gupta, A.; Gupta, S.; Guryn, W.; Haag, B.; Hamed, A.; Han, L.-X.; Haque, R.; Harris, J. W.; Heppelmann, S.; Hirsch, A.; Hoffmann, G. W.; Hofman, D. J.; Horvat, S.; Huang, B.; Huang, H. Z.; Huang, X.; Huck, P.; Humanic, T. J.; Igo, G.; Jacobs, W. W.; Jang, H.; Judd, E. G.; Kabana, S.; Kalinkin, D.; Kang, K.; Kauder, K.; Ke, H. W.; Keane, D.; Kechechyan, A.; Kesich, A.; Khan, Z. H.; Kikola, D. P.; Kisel, I.; Kisiel, A.; Koetke, D. D.; Kollegger, T.; Konzer, J.; Koralt, I.; Kosarzewski, L. K.; Kotchenda, L.; Kraishan, A. F.; Kravtsov, P.; Krueger, K.; Kulakov, I.; Kumar, L.; Kycia, R. A.; Lamont, M. A. C.; Landgraf, J. M.; Landry, K. D.; Lauret, J.; Lebedev, A.; Lednicky, R.; Lee, J. H.; LeVine, M. J.; Li, C.; Li, W.; Li, X.; Li, X.; Li, Y.; Li, Z. M.; Lisa, M. A.; Liu, F.; Ljubicic, T.; Llope, W. J.; Lomnitz, M.; Longacre, R. S.; Luo, X.; Ma, G. L.; Ma, Y. G.; Madagodagettige Don, D. M. M. D.; Mahapatra, D. P.; Majka, R.; Margetis, S.; Markert, C.; Masui, H.; Matis, H. S.; McDonald, D.; McShane, T. S.; Minaev, N. G.; Mioduszewski, S.; Mohanty, B.; Mondal, M. M.; Morozov, D. A.; Mustafa, M. K.; Nandi, B. K.; Nasim, Md.; Nayak, T. K.; Nelson, J. M.; Nigmatkulov, G.; Nogach, L. V.; Noh, S. Y.; Novak, J.; Nurushev, S. B.; Odyniec, G.; Ogawa, A.; Oh, K.; Ohlson, A.; Okorokov, V.; Oldag, E. W.; Olvitt, D. L.; Pachr, M.; Page, B. S.; Pal, S. K.; Pan, Y. X.; Pandit, Y.; Panebratsev, Y.; Pawlak, T.; Pawlik, B.; Pei, H.; Perkins, C.; Peryt, W.; Pile, P.; Planinic, M.; Pluta, J.; Poljak, N.; Poniatowska, K.; Porter, J.; Poskanzer, A. M.; Pruthi, N. K.; Przybycien, M.; Pujahari, P. R.; Putschke, J.; Qiu, H.; Quintero, A.; Ramachandran, S.; Raniwala, R.; Raniwala, S.; Ray, R. L.; Riley, C. K.; Ritter, H. G.; Roberts, J. B.; Rogachevskiy, O. V.; Romero, J. L.; Ross, J. F.; Roy, A.; Ruan, L.; Rusnak, J.; Rusnakova, O.; Sahoo, N. R.; Sahu, P. K.; Sakrejda, I.; Salur, S.; Sandweiss, J.; Sangaline, E.; Sarkar, A.; Schambach, J.; Scharenberg, R. P.; Schmah, A. M.; Schmidke, W. B.; Schmitz, N.; Seger, J.; Seyboth, P.; Shah, N.; Shahaliev, E.; Shanmuganathan, P. V.; Shao, M.; Sharma, B.; Shen, W. Q.; Shi, S. S.; Shou, Q. Y.; Sichtermann, E. P.; Singaraju, R. N.; Skoby, M. J.; Smirnov, D.; Smirnov, N.; Solanki, D.; Sorensen, P.; Spinka, H. M.; Srivastava, B.; Stanislaus, T. D. S.; Stevens, J. R.; Stock, R.; Strikhanov, M.; Stringfellow, B.; Sumbera, M.; Sun, X.; Sun, X. M.; Sun, Y.; Sun, Z.; Surrow, B.; Svirida, D. N.; Symons, T. J. M.; Szelezniak, M. A.; Takahashi, J.; Tang, A. H.; Tang, Z.; Tarnowsky, T.; Thomas, J. H.; Timmins, A. R.; Tlusty, D.; Tokarev, M.; Trentalange, S.; Tribble, R. E.; Tribedy, P.; Trzeciak, B. A.; Tsai, O. D.; Turnau, J.; Ullrich, T.; Underwood, D. G.; Van Buren, G.; van Nieuwenhuizen, G.; Vandenbroucke, M.; Vanfossen, J. A.; Varma, R.; Vasconcelos, G. M. S.; Vasiliev, A. N.; Vertesi, R.; Videbæk, F.; Viyogi, Y. P.; Vokal, S.; Vossen, A.; Wada, M.; Wang, F.; Wang, G.; Wang, H.; Wang, J. S.; Wang, X. L.; Wang, Y.; Wang, Y.; Webb, G.; Webb, J. C.; Westfall, G. D.; Wieman, H.; Wissink, S. W.; Witt, R.; Wu, Y. F.; Xiao, Z.; Xie, W.; Xin, K.; Xu, H.; Xu, J.; Xu, N.; Xu, Q. H.; Xu, Y.; Xu, Z.; Yan, W.; Yang, C.; Yang, Y.; Yang, Y.; Ye, Z.; Yepes, P.; Yi, L.; Yip, K.; Yoo, I.-K.; Yu, N.; Zawisza, Y.; Zbroszczyk, H.; Zha, W.; Zhang, J. B.; Zhang, J. L.; Zhang, S.; Zhang, X. P.; Zhang, Y.; Zhang, Z. P.; Zhao, F.; Zhao, J.; Zhong, C.; Zhu, X.; Zhu, Y. H.; Zoulkarneeva, Y.; Zyzak, M.; STAR Collaboration

2015-08-01

We report a new measurement of the midrapidity inclusive jet longitudinal double-spin asymmetry, AL L, in polarized p p collisions at center-of-mass energy √{s }=200 GeV . The STAR data place stringent constraints on polarized parton distribution functions extracted at next-to-leading order from global analyses of inclusive deep-inelastic scattering (DIS), semi-inclusive DIS, and RHIC p p data. The measured asymmetries provide evidence at the 3 σ level for positive gluon polarization in the Bjorken-x region x >0.05 .

The final inclusive and semi-inclusive longitudinal double-spin asymmetries at HERMES. Extraction of quark helicity distributions of the nucleon from deep-inelastic scattering

Energy Technology Data Exchange (ETDEWEB)

Kravchenko, Polina

2010-10-15

The thesis focuses on two aspects of the HERMES data analysis: the measurement of the semi-inclusive double spin asymmetries and the extraction of quark helicity distributions and quark polarizations of the nucleon from deep-inelastic scattering, as a possible interpretation of the HERMES data. The asymmetries are presented using all possible and accessible information about the HERMES data, including the latest systematic studies provided during the last years by HERMES collaboration. (orig.)

Spin fine structure of optically excited quantum dot molecules

Science.gov (United States)

Scheibner, M.; Doty, M. F.; Ponomarev, I. V.; Bracker, A. S.; Stinaff, E. A.; Korenev, V. L.; Reinecke, T. L.; Gammon, D.

2007-06-01

The interaction between spins in coupled quantum dots is revealed in distinct fine structure patterns in the measured optical spectra of InAs/GaAs double quantum dot molecules containing zero, one, or two excess holes. The fine structure is explained well in terms of a uniquely molecular interplay of spin-exchange interactions, Pauli exclusion, and orbital tunneling. This knowledge is critical for converting quantum dot molecule tunneling into a means of optically coupling not just orbitals but also spins.

The need for a change in the paradigm of entrepreneurship at universities: differences between innovative spin-offs and technology-based spin-offs

Directory of Open Access Journals (Sweden)

Enara Zarrabeitia

2016-05-01

Full Text Available This study seeks to analyse the main characteristics of and barriers to the growth and development of innovative university spin-offs (which originate mainly from the fields of social science and law and technology-based university spin-offs (which tend to originate from the experimental sciences, from technical studies and from health science. The idea is to examine whether there is a need to redirect university policies aimed in the field of entrepreneurship. The study is based on a sample of 40 university spin-offs originating from the University of the Basque Country (UPV/EHU. A questionnaire was sent to entrepreneurs identified with the aid of the persons in charge of the university programmes for creating businesses at the UPV/EHU. To determine the main differences between innovative and technology-based spin-offs, once the replies were received a bivariate or contingent analysis was applied to characterise the two types of business. The main barriers to growth and development encountered by the two types were then identified. The data analysed reveal significant differences between the two types of business, and a need for a change in the paradigm of university entrepreneurship.

Spin-wave resonances and surface spin pinning in Ga1-xMnxAs thin films

Science.gov (United States)

Bihler, C.; Schoch, W.; Limmer, W.; Goennenwein, S. T. B.; Brandt, M. S.

2009-01-01

We investigate the dependence of the spin-wave resonance (SWR) spectra of Ga0.95Mn0.05As thin films on the sample treatment. We find that for the external magnetic field perpendicular to the film plane, the SWR spectrum of the as-grown thin films and the changes upon etching and short-term hydrogenation can be quantitatively explained via a linear gradient in the uniaxial magnetic anisotropy field in growth direction. The model also qualitatively explains the SWR spectra observed for the in-plane easy-axis orientation of the external magnetic field. Furthermore, we observe a change in the effective surface spin pinning of the partially hydrogenated sample, which results from the tail in the hydrogen-diffusion profile. The latter leads to a rapidly changing hole concentration/magnetic anisotropy profile acting as a barrier for the spin-wave excitations. Therefore, short-term hydrogenation constitutes a simple method to efficiently manipulate the surface spin pinning.

The paramagnetic properties of ferromagnetic mixed-spin chain system

International Nuclear Information System (INIS)

Hu, Ai-Yuan; Wu, Zhi-Min; Cui, Yu-Ting; Qin, Guo-Ping

2015-01-01

The double-time Green's function method is used to investigate the paramagnetic properties of ferromagnetic mixed-spin chain system within the random-phase approximation and Anderson–Callen's decoupling approximation. The analytic expressions of the transverse susceptibility, longitudinal susceptibility and correlation length are obtained under transverse and longitudinal magnetic field. Using the analytic expressions of the transverse and longitudinal susceptibility to fit the experimental results, our results well agree with experimental data and the results from the high temperature series expansion within a simple Padé approximation. - Highlights: • We investigate the magnetic properties of a ferromagnetic mixed-spin chain system. • We use the double-time temperature-dependent Green's function technique. • Different single-ion anisotropy values for different spin values are considered. • Our results agree with experimental data and the results from the other theoretical methods

Quiescent double barrier regime in the DIII-D tokamak.

Science.gov (United States)

Greenfield, C M; Burrell, K H; DeBoo, J C; Doyle, E J; Stallard, B W; Synakowski, E J; Fenzi, C; Gohil, P; Groebner, R J; Lao, L L; Makowski, M A; McKee, G R; Moyer, R A; Rettig, C L; Rhodes, T L; Pinsker, R I; Staebler, G M; West, W P

2001-05-14

A new sustained high-performance regime, combining discrete edge and core transport barriers, has been discovered in the DIII-D tokamak. Edge localized modes (ELMs) are replaced by a steady oscillation that increases edge particle transport, thereby allowing particle control with no ELM-induced pulsed divertor heat load. The core barrier resembles those usually seen with a low (L) mode edge, without the degradation often associated with ELMs. The barriers are separated by a narrow region of high transport associated with a zero crossing in the E x B shearing rate.

Magnetoresistance stories of double perovskites

Indian Academy of Sciences (India)

2015-05-28

May 28, 2015 ... Tunnelling magnetoresistance (TMR) in polycrystalline double perovskites has been an important research topic for more than a decade now, where the nature of the insulating tunnel barrier is the core issue of debate. Other than the nonmagnetic grain boundaries as conventional tunnel barriers, intragrain ...

Magnetoresistance and magnetic properties of the double perovskites

International Nuclear Information System (INIS)

Philipp, J.B.; Majewski, P.; Resinger, D.; Gepraegs, S; Opel, M.; Reb, A.; Alff, L.; Gross, R.

2004-01-01

The magnetic double perovskite materials of composition A 2 BB'O 6 with A an alkaline earth ion and B and B' a magnetic and non-magnetic transition metal or lanthanide ions, respectively, have attracted considerable attention due to their interesting magnetic properties ranging from antiferromagnetism to geometrically frustrated spin systems and ferromagnetism. With respect to application in spin electronics, the ferromagnetic double perovskites with BB' = CrW, CrRe, FeMo or FeRe and A = Ca, Ba, Sr are highly interesting due to their in most cases high Curie temperatures well above room temperature and their half-magnetic behaviour. Here, we summarize the structural, magnetotransport, magnetic and optical properties of the ferromagnetic double perovskites and discuss the underlying physics. In particular, we discuss the impact of the steric effects resulting in a distorted perovskite structure, doping effects obtained by a partial replacing of the divalent alkaline earth ions on the A site by a trivalent lanthanide as well as B/B' cationic disorder on the Curie temperature T C , the saturation magnetization and the magnetotransport properties. Our results support the presence of a kinetic energy driven mechanism in the ferromagnetic double perovskites, where ferromagnetism is stabilised by a hybridization of states of the non-magnetic B'- site positioned in between the high spin B-sites. (author)

Ballistic spin filtering across the ferromagnetic-semiconductor interface

Directory of Open Access Journals (Sweden)

Y.H. Li

2012-03-01

Full Text Available The ballistic spin-filter effect from a ferromagnetic metal into a semiconductor has theoretically been studied with an intention of detecting the spin polarizability of density of states in FM layer at a higher energy level. The physical model for the ballistic spin filtering across the interface between ferromagnetic metals and semiconductor superlattice is developed by exciting the spin polarized electrons into n-type AlAs/GaAs superlattice layer at a much higher energy level and then ballistically tunneling through the barrier into the ferromagnetic film. Since both the helicity-modulated and static photocurrent responses are experimentally measurable quantities, the physical quantity of interest, the relative asymmetry of spin-polarized tunneling conductance, could be extracted experimentally in a more straightforward way, as compared with previous models. The present physical model serves guidance for studying spin detection with advanced performance in the future.

Pressure tuning of anisotropy barrier in Fe8 SMMs probed using high frequency EPR

Science.gov (United States)

Thirunavukkuarasu, Komalavalli; Beedle, Christopher; Tozer, Stanley; Hill, Stephen

2014-03-01

Single-molecule magnets (SMMs) are spin systems with large spin ground state where quantum phenomena such as tunneling of magnetization via a considerable anisotropy barrier manifest. One such SMM that has been extensively studied is [Fe8O2(OH)12(tacn)6]Br8.9H2O, also known as Fe8, with a giant spin ground state of S=10. The eight Fe atoms bridged by the ligands form a butterfly structure where six Fe atoms have spins up and two spins down in the simplest model. This structure in fact gives rise to geometrical spin frustration effects within the cluster. By varying the interaction between the spins, manipulation of quantum tunneling in SMMs may be achieved. Typically, the manipulation of spin interactions is realized using chemical methods. As an alternative approach, we employ high pressure to induce changes in the ligand-field environment of the Fe atoms. In this presentation, the pressure-dependent changes in the anisotropy barrier in single crystal Fe8 SMMs investigated by high frequency electron paramagnetic resonance measurements will be discussed.

Tuning spin-polarized transport in organic semiconductors

Science.gov (United States)

Mattana, Richard; Galbiati, Marta; Delprat, Sophie; Tatay, Sergio; Deranlot, Cyrile; Seneor, Pierre; Petroff, Frederic

Molecular spintronics is an emerging research field at the frontier between organic chemistry and the spintronics. Compared to traditional inorganic materials molecules are flexible and can be easily tailored by chemical synthesis. Due to their theoretically expected very long spin lifetime, they were first only seen as the ultimate media for spintronics devices. It was recently that new spintronics tailoring could arise from the chemical versatility brought by molecules. The hybridization between a ferromagnet and molecules induces a spin dependent broadening and energy shifting of the molecular orbitals leading to an induced spin polarization on the first molecular layer. This spin dependent hybridization can be used to tailor the spin dependent transport in organic spintronics devices. We have studied vertical Co/Alq3/Co organic spin valves. The negative magnetoresistance observed is the signature of different coupling strengths at the top and bottom interfaces. We have then inserted an inorganic tunnel barrier at the bottom interface in order to suppress the spin-dependent hybridization. In this case we restore a positive magnetoresistance. This demonstrates that at the bottom Co/Alq3 interface a stronger coupling occurs which induces an inversion of the spin polarization.

Reversible spin texture in ferroelectric Hf O2

Science.gov (United States)

Tao, L. L.; Paudel, Tula R.; Kovalev, Alexey A.; Tsymbal, Evgeny Y.

2017-06-01

Spin-orbit coupling effects occurring in noncentrosymmetric materials are known to be responsible for nontrivial spin configurations and a number of emergent physical phenomena. Ferroelectric materials may be especially interesting in this regard due to reversible spontaneous polarization making possible a nonvolatile electrical control of the spin degrees of freedom. Here, we explore a technologically relevant oxide material, Hf O2 , which has been shown to exhibit robust ferroelectricity in a noncentrosymmetric orthorhombic phase. Using theoretical modelling based on density-functional theory, we investigate the spin-dependent electronic structure of the ferroelectric Hf O2 and demonstrate the appearance of chiral spin textures driven by spin-orbit coupling. We analyze these spin configurations in terms of the Rashba and Dresselhaus effects within the k .p Hamiltonian model and find that the Rashba-type spin texture dominates around the valence-band maximum, while the Dresselhaus-type spin texture prevails around the conduction band minimum. The latter is characterized by a very large Dresselhaus constant λD= 0.578 eV Å, which allows using this material as a tunnel barrier to produce tunneling anomalous and spin Hall effects that are reversible by ferroelectric polarization.

General optimization procedure towards the design of a new family of minimal parameter spin-component-scaled double-hybrid density functional theory.

Science.gov (United States)

Roch, Loïc M; Baldridge, Kim K

2017-10-04

A general optimization procedure towards the development and implementation of a new family of minimal parameter spin-component-scaled double-hybrid (mSD) density functional theory (DFT) is presented. The nature of the proposed exchange-correlation functional establishes a methodology with minimal empiricism. This new family of double-hybrid (DH) density functionals is demonstrated using the PBEPBE functional, illustrating the optimization procedure to the mSD-PBEPBE method, and the performance characteristics shown for a set of non-covalent complexes covering a broad regime of weak interactions. With only two parameters, mSD-PBEPBE and its cost-effective counterpart, RI-mSD-PBEPBE, show a mean absolute error of ca. 0.4 kcal mol -1 averaged over 66 weak interacting systems. Following a successive 2D-grid refinement for a CBS extrapolation of the coefficients, the optimization procedure can be recommended for the design and implementation of a variety of additional DH methods using any of the plethora of currently available functionals.

Non-adiabatic Landau-Zener transitions in low-spin molecular magnet V sub 1 sub 5

CERN Document Server

Chiorescu, I; Müller, A; Bögge, H; Barbara, B

2000-01-01

The V sub 1 sub 5 polyoxovanadate molecule is made of 15 spins ((1)/(2)) with antiferromagnetic couplings. It belongs to the class of molecules with very large Hilbert space dimension (2 sup 1 sup 5 in V sub 1 sub 5 , 10 sup 8 in Mn sub 1 sub 2 -AC). It is a low spin/large molecule with spin S=((1)/(2)). Contrary to large spins/large molecules of the Mn sub 1 sub 2 -AC type, V sub 1 sub 5 has no energy barrier against spin rotation. Magnetization measurements have been performed and despite the absence of a barrier, magnetic hysteresis is observed over a timescale of several seconds. This new phenomenon characterized by a 'butterfly' hysteresis loop is due to the effect of the environment on the quantum rotation of the entangled 15 spins of the molecule, in which the phonon density of states is not at its equilibrium (phonon bottleneck).

Spin-polarized transport in a normal/ferromagnetic/normal zigzag graphene nanoribbon junction

International Nuclear Information System (INIS)

Tian Hong-Yu; Wang Jun

2012-01-01

We investigate the spin-dependent electron transport in single and double normal/ferromagnetic/normal zigzag graphene nanoribbon (NG/FG/NG) junctions. The ferromagnetism in the FG region originates from the spontaneous magnetization of the zigzag graphene nanoribbon. It is shown that when the zigzag-chain number of the ribbon is even and only a single transverse mode is actived, the single NG/FG/NG junction can act as a spin polarizer and/or a spin analyzer because of the valley selection rule and the spin-exchange field in the FG, while the double NG/FG/NG/FG/NG junction exhibits a quantum switching effect, in which the on and the off states switch rapidly by varying the cross angle between two FG magnetizations. Our findings may shed light on the application of magnetized graphene nanoribbons to spintronics devices. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

Proposed new test of spin effects in general relativity.

Science.gov (United States)

O'Connell, R F

2004-08-20

The recent discovery of a double-pulsar PSR J0737-3039A/B provides an opportunity of unequivocally observing, for the first time, spin effects in general relativity. Existing efforts involve detection of the precession of the spinning body itself. However, for a close binary system, spin effects on the orbit may also be discernible. Not only do they add to the advance of the periastron (by an amount which is small compared to the conventional contribution) but they also give rise to a precession of the orbit about the spin direction. The measurement of such an effect would also give information on the moment of inertia of pulsars.

Effect of graphene tunnel barrier on Schottky barrier height of Heusler alloy Co2MnSi/graphene/n-Ge junction

Science.gov (United States)

Gui-fang, Li; Jing, Hu; Hui, Lv; Zhijun, Cui; Xiaowei, Hou; Shibin, Liu; Yongqian, Du

2016-02-01

We demonstrate that the insertion of a graphene tunnel barrier between Heusler alloy Co2MnSi and the germanium (Ge) channel modulates the Schottky barrier height and the resistance-area product of the spin diode. We confirm that the Fermi level is depinned and a reduction in the electron Schottky barrier height (SBH) occurs following the insertion of the graphene layer between Co2MnSi and Ge. The electron SBH is modulated in the 0.34 eV-0.61 eV range. Furthermore, the transport mechanism changes from rectifying to symmetric tunneling following the insertion. This behavior provides a pathway for highly efficient spin injection from a Heusler alloy into a Ge channel with high electron and hole mobility. Project supported by the National Natural Science Foundation of China (Grant No. 61504107) and the Fundamental Research Funds for the Central Universities, China (Grant Nos. 3102014JCQ01059 and 3102015ZY043).

Removal of main exhaust gases of vehicles by a double dielectric barrier discharge

International Nuclear Information System (INIS)

Pacheco, M; Valdivia, R; Pacheco, J; Rivera, C; Alva, E; Santana, A; Huertas, J; Lefort, B; Estrada, N

2012-01-01

Because the health effects and their contribution to climate change, the emissions of toxic gases are becoming more controlled. In order to improve the diminution of toxic gases to the atmosphere, several techniques have been developed; here it will be focus only to automotive emissions. This work deals about the treatment of toxic gases emitted from vehicles by a non-thermal plasma. Several tests were done in a 4-cylinder 2002/Z16SE motor to characterize the vehicle emissions. With these results gas mixture simulating the exhaust gases vehicles, was used in experiments at different conditions employing a double dielectric barrier reactor for their treatment. The removal efficiencies superior to 90% show the competence of the non-thermal plasma reactor to treat these gases. Experimental results are explained with the aid of a simple chemical model that suggests a possible mechanism of degradation of toxic gases. The plasma reactor employed could works at 12V supplied without difficulty by a vehicle battery.

Modeling and optimization of a double-well double-barrier GaN/AlGaN/GaN/AlGaN resonant tunneling diode

Science.gov (United States)

Liu, Yang; Gao, Bo; Gong, Min; Shi, Ruiying

2017-06-01

The influence of a GaN layer as a sub-quantum well for an AlGaN/GaN/AlGaN double barrier resonant tunneling diode (RTD) on device performance has been investigated by means of numerical simulation. The introduction of the GaN layer as the sub-quantum well turns the dominant transport mechanism of RTD from the 3D-2D model to the 2D-2D model and increases the energy difference between tunneling energy levels. It can also lower the effective height of the emitter barrier. Consequently, the peak current and peak-to-valley current difference of RTD have been increased. The optimal GaN sub-quantum well parameters are found through analyzing the electrical performance, energy band, and transmission coefficient of RTD with different widths and depths of the GaN sub-quantum well. The most pronounced electrical parameters, a peak current density of 5800 KA/cm2, a peak-to-valley current difference of 1.466 A, and a peak-to-valley current ratio of 6.35, could be achieved by designing RTD with the active region structure of GaN/Al0.2Ga0.8 N/GaN/Al0.2Ga0.8 N (3 nm/1.5 nm/1.5 nm/1.5 nm).

Longitudinal double-spin asymmetry and cross section for inclusive jet production in polarized proton collisions at square root of s = 200 GeV.

Science.gov (United States)

Abelev, B I; Aggarwal, M M; Ahammed, Z; Amonett, J; Anderson, B D; Anderson, M; Arkhipkin, D; Averichev, G S; Bai, Y; Balewski, J; Barannikova, O; Barnby, L S; Baudot, J; Bekele, S; Belaga, V V; Bellingeri-Laurikainen, A; Bellwied, R; Benedosso, F; Bhardwaj, S; Bhasin, A; Bhati, A K; Bichsel, H; Bielcik, J; Bielcikova, J; Bland, L C; Blyth, S-L; Bonner, B E; Botje, M; Bouchet, J; Brandin, A V; Bravar, A; Burton, T P; Bystersky, M; Cadman, R V; Cai, X Z; Caines, H; Sánchez, M Calderón de la Barca; Castillo, J; Catu, O; Cebra, D; Chajecki, Z; Chaloupka, P; Chattopadhyay, S; Chen, H F; Chen, J H; Cheng, J; Cherney, M; Chikanian, A; Christie, W; Coffin, J P; Cormier, T M; Cosentino, M R; Cramer, J G; Crawford, H J; Das, D; Das, S; Dash, S; Daugherity, M; de Moura, M M; Dedovich, T G; Dephillips, M; Derevschikov, A A; Didenko, L; Dietel, T; Djawotho, P; Dogra, S M; Dong, W J; Dong, X; Draper, J E; Du, F; Dunin, V B; Dunlop, J C; Mazumdar, M R Dutta; Eckardt, V; Edwards, W R; Efimov, L G; Emelianov, V; Engelage, J; Eppley, G; Erazmus, B; Estienne, M; Fachini, P; Fatemi, R; Fedorisin, J; Filip, P; Finch, E; Fine, V; Fisyak, Y; Fu, J; Gagliardi, C A; Gaillard, L; Ganti, M S; Ghazikhanian, V; Ghosh, P; Gonzalez, J E; Gorbunov, Y G; Gos, H; Grebenyuk, O; Grosnick, D; Guertin, S M; Guimaraes, K S F F; Gupta, N; Gutierrez, T D; Haag, B; Hallman, T J; Hamed, A; Harris, J W; He, W; Heinz, M; Henry, T W; Hepplemann, S; Hippolyte, B; Hirsch, A; Hjort, E; Hoffman, A M; Hoffmann, G W; Horner, M J; Huang, H Z; Huang, S L; Hughes, E W; Humanic, T J; Igo, G; Jacobs, P; Jacobs, W W; Jakl, P; Jia, F; Jiang, H; Jones, P G; Judd, E G; Kabana, S; Kang, K; Kapitan, J; Kaplan, M; Keane, D; Kechechyan, A; Khodyrev, V Yu; Kim, B C; Kiryluk, J; Kisiel, A; Kislov, E M; Klein, S R; Kocoloski, A; Koetke, D D; Kollegger, T; Kopytine, M; Kotchenda, L; Kouchpil, V; Kowalik, K L; Kramer, M; Kravtsov, P; Kravtsov, V I; Krueger, K; Kuhn, C; Kulikov, A I; Kumar, A; Kuznetsov, A A; Lamont, M A C; Landgraf, J M; Lange, S; LaPointe, S; Laue, F; Lauret, J; Lebedev, A; Lednicky, R; Lee, C-H; Lehocka, S; LeVine, M J; Li, C; Li, Q; Li, Y; Lin, G; Lin, X; Lindenbaum, S J; Lisa, M A; Liu, F; Liu, H; Liu, J; Liu, L; Liu, Z; Ljubicic, T; Llope, W J; Long, H; Longacre, R S; Love, W A; Lu, Y; Ludlam, T; Lynn, D; Ma, G L; Ma, J G; Ma, Y G; Magestro, D; Mahapatra, D P; Majka, R; Mangotra, L K; Manweiler, R; Margetis, S; Markert, C; Martin, L; Matis, H S; Matulenko, Yu A; McClain, C J; McShane, T S; Melnick, Yu; Meschanin, A; Millane, J; Miller, M L; Minaev, N G; Mioduszewski, S; Mironov, C; Mischke, A; Mishra, D K; Mitchell, J; Mohanty, B; Molnar, L; Moore, C F; Morozov, D A; Munhoz, M G; Nandi, B K; Nattrass, C; Nayak, T K; Nelson, J M; Netrakanti, P K; Nogach, L V; Nurushev, S B; Odyniec, G; Ogawa, A; Okorokov, V; Oldenburg, M; Olson, D; Pachr, M; Pal, S K; Panebratsev, Y; Panitkin, S Y; Pavlinov, A I; Pawlak, T; Peitzmann, T; Perevoztchikov, V; Perkins, C; Peryt, W; Phatak, S C; Picha, R; Planinic, M; Pluta, J; Poljak, N; Porile, N; Porter, J; Poskanzer, A M; Potekhin, M; Potrebenikova, E; Potukuchi, B V K S; Prindle, D; Pruneau, C; Putschke, J; Rakness, G; Raniwala, R; Raniwala, S; Ray, R L; Razin, S V; Reinnarth, J; Relyea, D; Ridiger, A; Ritter, H G; Roberts, J B; Rogachevskiy, O V; Romero, J L; Rose, A; Roy, C; Ruan, L; Russcher, M J; Sahoo, R; Sakuma, T; Salur, S; Sandweiss, J; Sarsour, M; Sazhin, P S; Schambach, J; Scharenberg, R P; Schmitz, N; Seger, J; Selyuzhenkov, I; Seyboth, P; Shabetai, A; Shahaliev, E; Shao, M; Sharma, M; Shen, W Q; Shimanskiy, S S; Sichtermann, E P; Simon, F; Singaraju, R N; Smirnov, N; Snellings, R; Sood, G; Sorensen, P; Sowinski, J; Speltz, J; Spinka, H M; Srivastava, B; Stadnik, A; Stanislaus, T D S; Stock, R; Stolpovsky, A; Strikhanov, M; Stringfellow, B; Suaide, A A P; Sugarbaker, E; Sumbera, M; Sun, Z; Surrow, B; Swanger, M; Symons, T J M; Szanto de Toledo, A; Tai, A; Takahashi, J; Tang, A H; Tarnowsky, T; Thein, D; Thomas, J H; Timmins, A R; Timoshenko, S; Tokarev, M; Trainor, T A; Trentalange, S; Tribble, R E; Tsai, O D; Ulery, J; Ullrich, T; Underwood, D G; Buren, G Van; van der Kolk, N; van Leeuwen, M; Molen, A M Vander; Varma, R; Vasilevski, I M; Vasiliev, A N; Vernet, R; Vigdor, S E; Viyogi, Y P; Vokal, S; Voloshin, S A; Waggoner, W T; Wang, F; Wang, G; Wang, J S; Wang, X L; Wang, Y; Watson, J W; Webb, J C; Westfall, G D; Wetzler, A; Whitten, C; Wieman, H; Wissink, S W; Witt, R; Wood, J; Wu, J; Xu, N; Xu, Q H; Xu, Z; Yepes, P; Yoo, I-K; Yurevich, V I; Zhan, W; Zhang, H; Zhang, W M; Zhang, Y; Zhang, Z P; Zhao, Y; Zhong, C; Zoulkarneev, R; Zoulkarneeva, Y; Zubarev, A N; Zuo, J X

2006-12-22

We report a measurement of the longitudinal double-spin asymmetry A(LL) and the differential cross section for inclusive midrapidity jet production in polarized proton collisions at square root of s = 200 GeV. The cross section data cover transverse momenta 5 < pT < 50 GeV/c and agree with next-to-leading order perturbative QCD evaluations. The A(LL) data cover 5 < pT < 17 GeV/c and disfavor at 98% C.L. maximal positive gluon polarization in the polarized nucleon.

Circuit quantum electrodynamics with a spin qubit.

Science.gov (United States)

Petersson, K D; McFaul, L W; Schroer, M D; Jung, M; Taylor, J M; Houck, A A; Petta, J R

2012-10-18

Electron spins trapped in quantum dots have been proposed as basic building blocks of a future quantum processor. Although fast, 180-picosecond, two-quantum-bit (two-qubit) operations can be realized using nearest-neighbour exchange coupling, a scalable, spin-based quantum computing architecture will almost certainly require long-range qubit interactions. Circuit quantum electrodynamics (cQED) allows spatially separated superconducting qubits to interact via a superconducting microwave cavity that acts as a 'quantum bus', making possible two-qubit entanglement and the implementation of simple quantum algorithms. Here we combine the cQED architecture with spin qubits by coupling an indium arsenide nanowire double quantum dot to a superconducting cavity. The architecture allows us to achieve a charge-cavity coupling rate of about 30 megahertz, consistent with coupling rates obtained in gallium arsenide quantum dots. Furthermore, the strong spin-orbit interaction of indium arsenide allows us to drive spin rotations electrically with a local gate electrode, and the charge-cavity interaction provides a measurement of the resulting spin dynamics. Our results demonstrate how the cQED architecture can be used as a sensitive probe of single-spin physics and that a spin-cavity coupling rate of about one megahertz is feasible, presenting the possibility of long-range spin coupling via superconducting microwave cavities.

Some remarks about large p/sub perpendicular/ spin effects

International Nuclear Information System (INIS)

Field, R.D.

1977-01-01

A discussion of the ingredients necessary to make predictions concerning single and double spin measurements in large p/sub perpendicular to/ inclusive processes is presented. Remarks are made as to what might be expected and what might be learned from such measurements. Various models for the production of large p/sub perpendicular to/ mesons have quite different spin structure and hence can be expected to give differing predictions. However, it is not possible at this time to make quantitative calculations, and it is possible (not probable) that the interesting spin observables will be negligibly small

Optimization of the polarized Klein tunneling currents in a sub-lattice: pseudo-spin filters and latticetronics in graphene ribbons.

Science.gov (United States)

López, Luis I A; Yaro, Simeón Moisés; Champi, A; Ujevic, Sebastian; Mendoza, Michel

2014-02-12

We found that with an increase of the potential barrier applied to metallic graphene ribbons, the Klein tunneling current decreases until it is totally destroyed and the pseudo-spin polarization increases until it reaches its maximum value when the current is zero. This inverse relation disfavors the generation of polarized currents in a sub-lattice. In this work we discuss the pseudo-spin control (polarization and inversion) of the Klein tunneling currents, as well as the optimization of these polarized currents in a sub-lattice, using potential barriers in metallic graphene ribbons. Using density of states maps, conductance results, and pseudo-spin polarization information (all of them as a function of the energy V and width of the barrier L), we found (V, L) intervals in which the polarized currents in a given sub-lattice are maximized. We also built parallel and series configurations with these barriers in order to further optimize the polarized currents. A systematic study of these maps and barrier configurations shows that the parallel configurations are good candidates for optimization of the polarized tunneling currents through the sub-lattice. Furthermore, we discuss the possibility of using an electrostatic potential as (i) a pseudo-spin filter or (ii) a pseudo-spin inversion manipulator, i.e. a possible latticetronic of electronic currents through metallic graphene ribbons. The results of this work can be extended to graphene nanostructures.

Influence of spin correlations in the transport properties of a double quantum dot system

Science.gov (United States)

Costa Ribeiro, Laercio; Hamad, Ignacio; Chiappe, Guillermo; Victoriano Anda, Enrique

2013-03-01

In this work we study the influence of spin correlations in the transport properties of a system consisting of two quantum dots (QDs) with high Coulomb interaction U which are interconnected through a chain of N non-interacting sites and individually coupled to two metallic leads. Using both the finite U slave boson mean field approach (FUSBMFA) and the Logarithmic-discretization-embedded-cluster approximation (LDECA) we studied the system in different regions of the parameter space for which we calculate many physical quantities, namely local density of states, conductance, total spin, spin correlations, in addition to the renormalization parameters associated with the FUSBMFA. The results reveled a very rich physical scenario which is manifested by at least two different Kondo regimes, the well-known spin s = 1/2 and some other type of Kondo effect which appears as a result of the coupling between the QDs and the non-interacting central sites. We also consider the possibility of accessing some kind of Kondo box effect due to the discrete nature of the central chain and study how this regime is affected by the magnetic interaction between the local spins of the QD's and by the interaction between these spins and the spins of the conduction electros in the leads.

Non-BCS superconductivity for underdoped cuprates by spin-vortex attraction

OpenAIRE

Marchetti, P. A.; Ye, F.; Su, Z. B.; Yu, L.

2011-01-01

Within a gauge approach to the t-J model, we propose a new, non-BCS mechanism of superconductivity for underdoped cuprates. The gluing force of the superconducting mechanism is an attraction between spin vortices on two different N\\'eel sublattices, centered around the empty sites described in terms of fermionic holons. The spin fluctuations are described by bosonic spinons with a gap generated by the spin vortices. Due to the no-double occupation constraint, there is a gauge attraction betwe...

Dielectric and barrier thickness fluctuation scattering in Al2O3/AlGaN/GaN double heterojunction high-electron mobility transistors

International Nuclear Information System (INIS)

Ji, Dong; Lu, Yanwu; Liu, Bing; Liu, Guipeng; Zhu, Qinsheng; Wang, Zhanguo

2013-01-01

The two-dimensional electron gas (2DEG) mobility limited by dielectric and barrier thickness fluctuations (TF) scattering in Al 2 O 3 /AlGaN/GaN double heterojunction high-electron mobility transistors (HEMTs) is calculated. Calculation shows that thickness fluctuation scattering is the main limitation in Al 2 O 3 /AlGaN/GaN double heterojunction HEMTs with thin Al 2 O 3 layer thicknesses. In addition, a study of 2DEG mobility as a function of 2DEG density, n s , shows that TF scattering acts as the main limitation when n s exceeds 2 × 10 12 cm −2 . The results may be used to design HEMTs to obtain higher 2DEG mobilities by modulating the dielectric layer and barrier thicknesses or 2DEG density. - Highlights: • The mobility limited by thickness fluctuation (TF) scattering is studied. • Results show that thickness fluctuation scattering is the main limitation. • Two-dimensional electron gas (2DEG) mobility is a function of 2DEG density. • TF scattering is the main limitation when 2DEG density exceeds 2 × 10 12 cm −2

Robust spin transfer torque in antiferromagnetic tunnel junctions

KAUST Repository

Saidaoui, Hamed Ben Mohamed; Waintal, Xavier; Manchon, Aurelien

2017-01-01

We theoretically study the current-induced spin torque in antiferromagnetic tunnel junctions, composed of two semi-infinite antiferromagnetic layers separated by a tunnel barrier, in both clean and disordered regimes. We find that the torque

Density and temperature profile modifications with electron cyclotron power injection in quiescent double barrier discharges on DIII-D

International Nuclear Information System (INIS)

Casper, T A; Burrell, K H; Doyle, E J; Gohil, P; Lasnier, C J; Leonard, A W; Moller, J M; Osborne, T H; Snyder, P B; Thomas, D M; Weiland, J; West, W P

2006-01-01

Quiescent double barrier (QDB) conditions often form when an internal transport barrier is created with high-power neutral-beam injection into a quiescent H-mode (QH) plasma. These QH-modes offer an attractive, high-performance operating scenario for burning plasma experiments due to their quasi-stationarity and lack of edge localized modes. Our initial experiments and modelling using ECH/ECCD in QDB shots were designed to control the current profile and, indeed, we have observed a strong dependence on the q-profile when EC-power is used inside the core transport barrier region. While strong electron heating is observed with EC power injection, we also observe a drop in the other core parameters, namely ion temperature and rotation, electron density and impurity concentration. At onset and termination of the EC pulse, dynamically changing conditions are induced that provide a rapid evolution of T e /T i profiles accessible with 0.3 e /T i ) axis e /T i ratio as the ion temperature and density profiles flatten with this change in transport. The change in transport is consistent with a destabilization of ITG turbulence as inferred from the reduction of the stability threshold due to the change in T e /T i

Self-similarity of proton spin and asymmetry of jet production

International Nuclear Information System (INIS)

Tokarev, M.V.; Zborovsky, I.

2014-01-01

Self-similarity of jet production in polarized p + p collisions is studied. The concept of z-scaling is applied for description of inclusive spectra obtained with different orientations of proton spin. New data on the double longitudinal spin asymmetry, A LL , of jets produced in proton-proton collisions at √s = 200 GeV measured by the STAR Collaboration at RHIC are analyzed in the z-scaling approach. Hypotheses of self-similarity and fractality of internal spin structure are formulated. A possibility to extract information on spin-dependent fractal dimensions of proton from the asymmetry of jet production is justified. The spin-dependent fractal dimensions for the process p-bar+p-bar→jet+X are estimated.

Intersubunit distances in full-length, dimeric, bacterial phytochrome Agp1, as measured by pulsed electron-electron double resonance (PELDOR) between different spin label positions, remain unchanged upon photoconversion.

Science.gov (United States)

Kacprzak, Sylwia; Njimona, Ibrahim; Renz, Anja; Feng, Juan; Reijerse, Edward; Lubitz, Wolfgang; Krauss, Norbert; Scheerer, Patrick; Nagano, Soshichiro; Lamparter, Tilman; Weber, Stefan

2017-05-05

Bacterial phytochromes are dimeric light-regulated histidine kinases that convert red light into signaling events. Light absorption by the N-terminal photosensory core module (PCM) causes the proteins to switch between two spectrally distinct forms, Pr and Pfr, thus resulting in a conformational change that modulates the C-terminal histidine kinase region. To provide further insights into structural details of photoactivation, we investigated the full-length Agp1 bacteriophytochrome from the soil bacterium Agrobacterium fabrum using a combined spectroscopic and modeling approach. We generated seven mutants suitable for spin labeling to enable application of pulsed EPR techniques. The distances between attached spin labels were measured using pulsed electron-electron double resonance spectroscopy to probe the arrangement of the subunits within the dimer. We found very good agreement of experimental and calculated distances for the histidine-kinase region when both subunits are in a parallel orientation. However, experimental distance distributions surprisingly showed only limited agreement with either parallel- or antiparallel-arranged dimer structures when spin labels were placed into the PCM region. This observation indicates that the arrangements of the PCM subunits in the full-length protein dimer in solution differ significantly from that in the PCM crystals. The pulsed electron-electron double resonance data presented here revealed either no or only minor changes of distance distributions upon Pr-to-Pfr photoconversion. © 2017 by The American Society for Biochemistry and Molecular Biology, Inc.

Double-trace deformations of conformal correlations

Science.gov (United States)

Giombi, Simone; Kirilin, Vladimir; Perlmutter, Eric

2018-02-01

Large N conformal field theories often admit unitary renormalization group flows triggered by double-trace deformations. We compute the change in scalar four-point functions under double-trace flow, to leading order in 1/ N. This has a simple dual in AdS, where the flow is implemented by a change of boundary conditions, and provides a physical interpretation of single-valued conformal partial waves. We extract the change in the conformal dimensions and three-point coefficients of infinite families of double-trace composite operators. Some of these quantities are found to be sign-definite under double-trace flow. As an application, we derive anomalous dimensions of spinning double-trace operators comprised of non-singlet constituents in the O( N) vector model.

Investigation of the negative differential resistance reproducibility in AlN/GaN double-barrier resonant tunnelling diodes

Energy Technology Data Exchange (ETDEWEB)

Boucherit, M.; Soltani, A.; Rousseau, M.; Deresmes, D.; Berthe, M.; Durand, C.; De Jaeger, J.-C. [IEMN/UMR-CNRS 8520, Universite Lille1, PRES Universite Lille Nord de France (France); Monroy, E. [Equipe mixte CEA-CNRS-UJF Nanophysique et Semiconducteurs, DRFMC/SP2M/PSC, CEA-Grenoble (France)

2011-10-31

AlN/GaN double-barrier resonant tunnelling diodes were grown by molecular beam epitaxy on GaN/sapphire template and processed into mesa diameters from 2 {mu}m to 4 {mu}m. The current-voltage characteristics were carried out in direct current operation and under-high vacuum. A sharp negative differential resistance (NDR) was detected in the forward bias at 120 K. The NDR was observed for the mesa size of 2 {mu}m at 4 V with a peak-to-valley current ratio of 3.5. The measurement conditions were chosen to make NDR reproducible more than 50 times and apparent in both scan voltage directions after electrical treatment.

Comfort and microbial barrier properties of garments worn next to the skin

Science.gov (United States)

Kopitar, D.; Rogina-Car, B.; Skenderi, Z.

2017-10-01

Compared with viscose fibre, modal fibre is characterized by some advantageous properties such as higher dry and wet tenacities, higher wet modulus, lower water retention capacity and lower level of swelling. Impact of different knitted fabric structure made of cotton and 97 % CMD/3 % EL fibres on thermo-physiological comfort and microbial barrier properties were investigated. All knitted fabrics have very good physiological properties. The microbial barrier permeability of knitted fabric after extreme contamination with bacterial spores in dry state showed that double jersey offered more effective microbial barrier than the single jersey knitted fabrics respectively the greater thickness of double jersey knitted fabric provide more difficult barrier to bacterial spores to pass. In wet state all knitted fabrics have more effective microbial barrier which could be explained by cellulose fibres swelling. In wet state 97 % CMD/3 % EL single jersey knitted fabric have more effective microbial barrier then cotton double and single jersey knitted fabrics.

Tunnel superpenetrability of potential barriers

International Nuclear Information System (INIS)

Zakhariev, B N.

1982-01-01

The transmission of two particles through the same barrier is considered. The limiting cases are compared when the particles are joined together in a single particle with double mass-energy and potential and when they pass the barrier independently. As an intermediate case a pair of particles bound in a quasideuteron of a finite size is considered. It is shown that long-range collective correlations of particles (of the superfluidity type and others) simplify very much for them passing through high potential barriers. This happens due to the transfer of the additional energy from the particles outside the barriers to those inside it

A graphene solution to conductivity mismatch: spin injection from ferromagnetic metal/graphene tunnel contacts into silicon

Science.gov (United States)

van't Erve, Olaf

2014-03-01

New paradigms for spin-based devices, such as spin-FETs and reconfigurable logic, have been proposed and modeled. These devices rely on electron spin being injected, transported, manipulated and detected in a semiconductor channel. This work is the first demonstration on how a single layer of graphene can be used as a low resistance tunnel barrier solution for electrical spin injection into Silicon at room temperature. We will show that a FM metal / monolayer graphene contact serves as a spin-polarized tunnel barrier which successfully circumvents the classic metal / semiconductor conductivity mismatch issue for electrical spin injection. We demonstrate electrical injection and detection of spin accumulation in Si above room temperature, and show that the corresponding spin lifetimes correlate with the Si carrier concentration, confirming that the spin accumulation measured occurs in the Si and not in interface trap states. An ideal tunnel barrier should exhibit several key material characteristics: a uniform and planar habit with well-controlled thickness, minimal defect / trapped charge density, a low resistance-area product for minimal power consumption, and compatibility with both the FM metal and semiconductor, insuring minimal diffusion to/from the surrounding materials at temperatures required for device processing. Graphene, offers all of the above, while preserving spin injection properties, making it a compelling solution to the conductivity mismatch for spin injection into Si. Although Graphene is very conductive in plane, it exhibits poor conductivity perpendicular to the plane. Its sp2 bonding results in a highly uniform, defect free layer, which is chemically inert, thermally robust, and essentially impervious to diffusion. The use of a single monolayer of graphene at the Si interface provides a much lower RA product than any film of an oxide thick enough to prevent pinholes (1 nm). Our results identify a new route to low resistance-area product spin

Numerical simulation of spin-qubit operation in coupled quantum dots

International Nuclear Information System (INIS)

Goto, Daisuke; Eto, Mikio

2007-01-01

Electronic states and spin operation in coupled quantum dots are numerically studied, considering realistic shape of quantum dots and electron-electron interaction. (i) We evaluate the spin coupling J between two electron spins, as a function of magnetic field perpendicular to the quantum dots. We observe a transition from antiferromagnetic coupling (J>0) to ferromagnetic coupling (J<0) at magnetic field of a few Tesla. The spin coupling is hardly influenced by the size difference between the quantum dots if the energy levels are matched. (ii) We simulate SWAP gate operations by calculating the time development of two electron spins. We show that a sudden change of tunnel barrier may result in the gate errors. The spin exchange is incomplete in the presence of strong spin-orbit interaction in InGaAs. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Interaction of spin and vibrations in transport through single-molecule magnets.

Science.gov (United States)

May, Falk; Wegewijs, Maarten R; Hofstetter, Walter

2011-01-01

We study electron transport through a single-molecule magnet (SMM) and the interplay of its anisotropic spin with quantized vibrational distortions of the molecule. Based on numerical renormalization group calculations we show that, despite the longitudinal anisotropy barrier and small transverse anisotropy, vibrational fluctuations can induce quantum spin-tunneling (QST) and a QST-Kondo effect. The interplay of spin scattering, QST and molecular vibrations can strongly enhance the Kondo effect and induce an anomalous magnetic field dependence of vibrational Kondo side-bands.

Electronic correlation without double counting via a combination of spin projected Hartree-Fock and density functional theories

Energy Technology Data Exchange (ETDEWEB)

Garza, Alejandro J.; Jiménez-Hoyos, Carlos A. [Department of Chemistry, Rice University, Houston, Texas 77251-1892 (United States); Scuseria, Gustavo E. [Department of Chemistry and Department of Physics and Astronomy, Rice University, Houston, Texas 77251-1892, USA and Chemistry Department, Faculty of Science, King Abdulaziz University, Jeddah 21589 (Saudi Arabia)

2014-06-28

Several schemes to avoid the double counting of correlations in methods that merge multireference wavefunctions with density functional theory (DFT) are studied and here adapted to a combination of spin-projected Hartree-Fock (SUHF) and DFT. The advantages and limitations of the new method, denoted SUHF+f{sub c}DFT, are explored through calculations on benchmark sets in which the accounting of correlations is challenging for pure SUHF or DFT. It is shown that SUHF+f{sub c}DFT can greatly improve the description of certain molecular properties (e.g., singlet-triplet energy gaps) which are not improved by simple addition of DFT dynamical correlation to SUHF. However, SUHF+f{sub c}DFT is also shown to have difficulties dissociating certain types of bonds and describing highly charged ions with static correlation. Possible improvements to the current SUHF+f{sub c}DFT scheme are discussed in light of these results.

Spin Transfer in Polymer Degradation of Abnormal Linkage

Science.gov (United States)

Yu, Tianrong; Tian, Chuanjin; Liu, Xizhe; Wang, Jia; Gao, Yang; Wang, Zhigang

2017-07-01

The degradation of polymer materials plays an important role in production and life. In this work, the degradation mechanism of poly-α-methylstyrene (PAMS) tetramers with abnormal linkage was investigated by using density functional theory (DFT). Calculated results indicate that the head-to-head and the tail-to-tail reactions needed to overcome the energy barriers are about 0.15 eV and about 1.26 eV, respectively. The broken C-C bond at the unsaturated end of the chain leads to the dissociation of alpha-methylstyrene (AMS) monomers one by one. Furthermore, the analyses of bond characteristics are in good agreement with the results of energy barriers. In addition, the spin population analysis presents an interesting net spin transfer process in depolymerization reactions. We hope that the current theoretical results provide useful help to understand the degradation mechanism of polymers.

Thermal shock behavior of toughened gadolinium zirconate/YSZ double-ceramic-layered thermal barrier coating

International Nuclear Information System (INIS)

Zhong, Xinghua; Zhao, Huayu; Zhou, Xiaming; Liu, Chenguang; Wang, Liang; Shao, Fang; Yang, Kai; Tao, Shunyan; Ding, Chuanxian

2014-01-01

Highlights: • Gd 2 Zr 2 O 7 /YSZ DCL thermal barrier coating was designed and fabricated. • The Gd 2 Zr 2 O 7 top ceramic layer was toughened by addition of nanostructured 3YSZ. • Remarkable improvement in thermal shock resistance of the DCL coating was achieved. - Abstract: Double-ceramic-layered (DCL) thermal barrier coating system comprising of toughened Gadolinium zirconate (Gd 2 Zr 2 O 7 , GZ) as the top ceramic layer and 4.5 mol% Y 2 O 3 partially-stabilized ZrO 2 (4.5YSZ) as the bottom ceramic layer was fabricated by plasma spraying and thermal shock behavior of the DCL coating was investigated. The GZ top ceramic layer was toughened by addition of nanostructured 3 mol% Y 2 O 3 partially-stabilized ZrO 2 (3YSZ) to improve fracture toughness of the matrix. The thermal shock resistance of the DCL coating was enhanced significantly compared to that of single-ceramic-layered (SCL) GZ-3YSZ composite coating, which is believed to be primarily attributed to the two factors: (i) the increase in fracture toughness of the top ceramic layer by incorporating nanostructured YSZ particles and (ii) the improvement in strain tolerance through the utilization of 4.5YSZ as the bottom ceramic layer. In addition, the failure mechanisms are mainly attributed to the still low fracture toughness of the top ceramic layer and oxidation of the bond-coat

Open problems in sub-barrier fusion

International Nuclear Information System (INIS)

Vandenbosch, R.

1992-01-01

Two aspects of sub-barrier fusion are discussed. A challenge to the use of fission fragment angular distributions to probe the spin distribution in fusion is addressed. Evidence from excitation functions for the importance of neutron transfer and the neck degree of freedom is examined

Spin injection, transport, and read/write operation in spin-based MOSFET

International Nuclear Information System (INIS)

Saito, Yoshiaki; Marukame, Takao; Inokuchi, Tomoaki; Ishikawa, Mizue; Sugiyama, Hideyuki; Tanamoto, Tetsufumi

2011-01-01

We proposed a novel spin-based MOSFET 'Spin-Transfer-torque-Switching MOSFET (STS-MOSFET)' that offers non-volatile memory and transistor functions with complementary metal-oxide-semiconductor (CMOS) compatibility, high endurance and fast write time using STS. The STS-MOSFETs with Heusler alloy (Co 2 Fe 1 Al 0.5 Si 0.5 ) were prepared and reconfigurability of a novel spintronics-based MOSFET, STS-MOSFET, was successfully realized for the transport properties owing to reduction of the contact resistance in ferromagnetic metal/thin insulator tunnel barrier/Si junctions. The device showed magnetocurrent (MC) and write characteristics with the endurance of over 10 5 cycles. It was also clarified that the read characteristic can be improved in terms of MC ratio, however, is deteriorated in terms of the mobility by choosing connection configurations of the source and the drain in the STS-MOSFETs.

Precision Measurement of the Longitudinal Double-Spin Asymmetry for Inclusive Jet Production in Polarized Proton Collisions at sqrt[s]=200  GeV.

Science.gov (United States)

Adamczyk, L; Adkins, J K; Agakishiev, G; Aggarwal, M M; Ahammed, Z; Alekseev, I; Alford, J; Anson, C D; Aparin, A; Arkhipkin, D; Aschenauer, E C; Averichev, G S; Banerjee, A; Beavis, D R; Bellwied, R; Bhasin, A; Bhati, A K; Bhattarai, P; Bichsel, H; Bielcik, J; Bielcikova, J; Bland, L C; Bordyuzhin, I G; Borowski, W; Bouchet, J; Brandin, A V; Brovko, S G; Bültmann, S; Bunzarov, I; Burton, T P; Butterworth, J; Caines, H; Calderón de la Barca Sánchez, M; Campbell, J M; Cebra, D; Cendejas, R; Cervantes, M C; Chaloupka, P; Chang, Z; Chattopadhyay, S; Chen, H F; Chen, J H; Chen, L; Cheng, J; Cherney, M; Chikanian, A; Christie, W; Chwastowski, J; Codrington, M J M; Contin, G; Cramer, J G; Crawford, H J; Cudd, A B; Cui, X; Das, S; Davila Leyva, A; De Silva, L C; Debbe, R R; Dedovich, T G; Deng, J; Derevschikov, A A; Derradi de Souza, R; Dhamija, S; di Ruzza, B; Didenko, L; Dilks, C; Ding, F; Djawotho, P; Dong, X; Drachenberg, J L; Draper, J E; Du, C M; Dunkelberger, L E; Dunlop, J C; Efimov, L G; Engelage, J; Engle, K S; Eppley, G; Eun, L; Evdokimov, O; Eyser, O; Fatemi, R; Fazio, S; Fedorisin, J; Filip, P; Finch, E; Fisyak, Y; Flores, C E; Gagliardi, C A; Gangadharan, D R; Garand, D; Geurts, F; Gibson, A; Girard, M; Gliske, S; Greiner, L; Grosnick, D; Gunarathne, D S; Guo, Y; Gupta, A; Gupta, S; Guryn, W; Haag, B; Hamed, A; Han, L-X; Haque, R; Harris, J W; Heppelmann, S; Hirsch, A; Hoffmann, G W; Hofman, D J; Horvat, S; Huang, B; Huang, H Z; Huang, X; Huck, P; Humanic, T J; Igo, G; Jacobs, W W; Jang, H; Judd, E G; Kabana, S; Kalinkin, D; Kang, K; Kauder, K; Ke, H W; Keane, D; Kechechyan, A; Kesich, A; Khan, Z H; Kikola, D P; Kisel, I; Kisiel, A; Koetke, D D; Kollegger, T; Konzer, J; Koralt, I; Kosarzewski, L K; Kotchenda, L; Kraishan, A F; Kravtsov, P; Krueger, K; Kulakov, I; Kumar, L; Kycia, R A; Lamont, M A C; Landgraf, J M; Landry, K D; Lauret, J; Lebedev, A; Lednicky, R; Lee, J H; LeVine, M J; Li, C; Li, W; Li, X; Li, X; Li, Y; Li, Z M; Lisa, M A; Liu, F; Ljubicic, T; Llope, W J; Lomnitz, M; Longacre, R S; Luo, X; Ma, G L; Ma, Y G; Madagodagettige Don, D M M D; Mahapatra, D P; Majka, R; Margetis, S; Markert, C; Masui, H; Matis, H S; McDonald, D; McShane, T S; Minaev, N G; Mioduszewski, S; Mohanty, B; Mondal, M M; Morozov, D A; Mustafa, M K; Nandi, B K; Nasim, Md; Nayak, T K; Nelson, J M; Nigmatkulov, G; Nogach, L V; Noh, S Y; Novak, J; Nurushev, S B; Odyniec, G; Ogawa, A; Oh, K; Ohlson, A; Okorokov, V; Oldag, E W; Olvitt, D L; Pachr, M; Page, B S; Pal, S K; Pan, Y X; Pandit, Y; Panebratsev, Y; Pawlak, T; Pawlik, B; Pei, H; Perkins, C; Peryt, W; Pile, P; Planinic, M; Pluta, J; Poljak, N; Poniatowska, K; Porter, J; Poskanzer, A M; Pruthi, N K; Przybycien, M; Pujahari, P R; Putschke, J; Qiu, H; Quintero, A; Ramachandran, S; Raniwala, R; Raniwala, S; Ray, R L; Riley, C K; Ritter, H G; Roberts, J B; Rogachevskiy, O V; Romero, J L; Ross, J F; Roy, A; Ruan, L; Rusnak, J; Rusnakova, O; Sahoo, N R; Sahu, P K; Sakrejda, I; Salur, S; Sandweiss, J; Sangaline, E; Sarkar, A; Schambach, J; Scharenberg, R P; Schmah, A M; Schmidke, W B; Schmitz, N; Seger, J; Seyboth, P; Shah, N; Shahaliev, E; Shanmuganathan, P V; Shao, M; Sharma, B; Shen, W Q; Shi, S S; Shou, Q Y; Sichtermann, E P; Singaraju, R N; Skoby, M J; Smirnov, D; Smirnov, N; Solanki, D; Sorensen, P; Spinka, H M; Srivastava, B; Stanislaus, T D S; Stevens, J R; Stock, R; Strikhanov, M; Stringfellow, B; Sumbera, M; Sun, X; Sun, X M; Sun, Y; Sun, Z; Surrow, B; Svirida, D N; Symons, T J M; Szelezniak, M A; Takahashi, J; Tang, A H; Tang, Z; Tarnowsky, T; Thomas, J H; Timmins, A R; Tlusty, D; Tokarev, M; Trentalange, S; Tribble, R E; Tribedy, P; Trzeciak, B A; Tsai, O D; Turnau, J; Ullrich, T; Underwood, D G; Van Buren, G; van Nieuwenhuizen, G; Vandenbroucke, M; Vanfossen, J A; Varma, R; Vasconcelos, G M S; Vasiliev, A N; Vertesi, R; Videbæk, F; Viyogi, Y P; Vokal, S; Vossen, A; Wada, M; Wang, F; Wang, G; Wang, H; Wang, J S; Wang, X L; Wang, Y; Wang, Y; Webb, G; Webb, J C; Westfall, G D; Wieman, H; Wissink, S W; Witt, R; Wu, Y F; Xiao, Z; Xie, W; Xin, K; Xu, H; Xu, J; Xu, N; Xu, Q H; Xu, Y; Xu, Z; Yan, W; Yang, C; Yang, Y; Yang, Y; Ye, Z; Yepes, P; Yi, L; Yip, K; Yoo, I-K; Yu, N; Zawisza, Y; Zbroszczyk, H; Zha, W; Zhang, J B; Zhang, J L; Zhang, S; Zhang, X P; Zhang, Y; Zhang, Z P; Zhao, F; Zhao, J; Zhong, C; Zhu, X; Zhu, Y H; Zoulkarneeva, Y; Zyzak, M

2015-08-28

We report a new measurement of the midrapidity inclusive jet longitudinal double-spin asymmetry, A_{LL}, in polarized pp collisions at center-of-mass energy sqrt[s]=200  GeV. The STAR data place stringent constraints on polarized parton distribution functions extracted at next-to-leading order from global analyses of inclusive deep-inelastic scattering (DIS), semi-inclusive DIS, and RHIC pp data. The measured asymmetries provide evidence at the 3σ level for positive gluon polarization in the Bjorken-x region x>0.05.

Cotunneling enhancement of magnetoresistance in double magnetic tunnel junctions with embedded superparamagnetic NiFe nanoparticles

International Nuclear Information System (INIS)

Dempsey, K.J.; Arena, D.; Hindmarch, A.T.; Wei, H.X.; Qin, Q.H.; Wen, Z.C.; Wang, W.X.; Vallejo-Fernandez, G.; Han, X.F.; Marrows, C.H.

2010-01-01

Temperature and bias voltage-dependent transport characteristics are presented for double magnetic tunnel junctions (DMTJs) with self-assembled NiFe nanoparticles embedded between insulating alumina barriers. The junctions with embedded nanoparticles are compared to junctions with a single barrier of comparable size and growth conditions. The embedded particles are characterized using x-ray absorption spectroscopy, transmission electron microscopy, and magnetometry techniques, showing that they are unoxidized and remain superparamagnetic to liquid helium temperatures. The tunneling magnetoresistance (TMR) for the DMTJs is lower than the control samples, however, for the DMTJs an enhancement in TMR is seen in the Coulomb blockade region. Fitting the transport data in this region supports the theory that cotunneling is the dominant electron transport process within the Coulomb blockade region, sequential tunneling being suppressed. We therefore see an enhanced TMR attributed to the change in the tunneling process due to the interplay of the Coulomb blockade and spin-dependent tunneling through superparamagnetic nanoparticles, and develop a simple model to quantify the effect, based on the fact that our nanoparticles will appear blocked when measured on femtosecond tunneling time scales.

Pauli Spin Blockade and the Ultrasmall Magnetic Field Effect

KAUST Repository

Danon, Jeroen

2013-08-06

Based on the spin-blockade model for organic magnetoresistance, we present an analytic expression for the polaron-bipolaron transition rate, taking into account the effective nuclear fields on the two sites. We reveal the physics behind the qualitatively different magnetoconductance line shapes observed in experiment, as well as the ultrasmall magnetic field effect (USFE). Since our findings agree in detail with recent experiments, they also indirectly provide support for the spin-blockade interpretation of organic magnetoresistance. In addition, we predict the existence of a similar USFE in semiconductor double quantum dots tuned to the spin-blockade regime.

Pauli Spin Blockade and the Ultrasmall Magnetic Field Effect

KAUST Repository

Danon, Jeroen; Wang, Xuhui; Manchon, Aurelien

2013-01-01

Based on the spin-blockade model for organic magnetoresistance, we present an analytic expression for the polaron-bipolaron transition rate, taking into account the effective nuclear fields on the two sites. We reveal the physics behind the qualitatively different magnetoconductance line shapes observed in experiment, as well as the ultrasmall magnetic field effect (USFE). Since our findings agree in detail with recent experiments, they also indirectly provide support for the spin-blockade interpretation of organic magnetoresistance. In addition, we predict the existence of a similar USFE in semiconductor double quantum dots tuned to the spin-blockade regime.

Environmental Effects on Quantum Reversal of Mesoscopic Spins

Science.gov (United States)

Giraud, R.; Chiorescu, I.; Wernsdorfer, W.; Barbara, B.; Jansen, A. G. M.; Caneschi, A.; Mueller, A.; Tkachuk, A. M.

2002-10-01

We describe what we learnt these last years on quantum reversal of large magnetic moments, using mainly conventional SQUID or micro-SQUID magnetometry. Beside the case of ferromagnetic nanoparticles with 103 - 105 atoms (e.g. Co, Ni, Fe, Ferrites), most fruitful systems appeared to be ensembles of magnetic molecules. These molecules, generally arranged in single crystals, carry relatively small magnetic moments (S = 10 in Mn12-ac and Fe8). They are sufficiently apart from each other not to be coupled by exchange interactions. The ground multiplet is split over an energy barrier of tens of kelvin (≈ 67 K for Mn12) by a strong local crystal field, leading to an Ising-type ground-state. Only weak inter-molecular dipolar interactions are present, as well as intra-molecular interactions, such as hyperfine interactions. Quantum properties of molecule spins are crucially dependent on their magnetic environment of electronic and nuclear spins (the spin bath). Energy fluctuations of the spin bath of about 0.1 K are important, especially at very low temperatures. In particular, they are much larger than the ground-state tunnel splitting of large-spin molecules in low applied fields, of about 10-8 K or even less (such a low value is due to the presence of large energy barriers). Theoretical predictions are experimentally checked for tunneling effects in the presence of non-equilibrated or equilibrated spin-energy distribution. It is also shown that the phonon-bath plays no role in low field, except when the temperature approaches the cross-over temperature to the thermal activation regime. In fact, spin-phonon transitions can play a role only if the tunnel splitting is not too small in comparison with kBT. This is the case both for large-spin molecules in a large magnetic field (e.g. Mn12-ac in a few tesla) and for low-spin molecules, as shown with the study of the molecule V15 (Hilbert space dimension as large as 215 and spin 1/2). We also give our latest results on the

Spectral Gap Estimates in Mean Field Spin Glasses

Science.gov (United States)

Ben Arous, Gérard; Jagannath, Aukosh

2018-05-01

We show that mixing for local, reversible dynamics of mean field spin glasses is exponentially slow in the low temperature regime. We introduce a notion of free energy barriers for the overlap, and prove that their existence imply that the spectral gap is exponentially small, and thus that mixing is exponentially slow. We then exhibit sufficient conditions on the equilibrium Gibbs measure which guarantee the existence of these barriers, using the notion of replicon eigenvalue and 2D Guerra Talagrand bounds. We show how these sufficient conditions cover large classes of Ising spin models for reversible nearest-neighbor dynamics and spherical models for Langevin dynamics. Finally, in the case of Ising spins, Panchenko's recent rigorous calculation (Panchenko in Ann Probab 46(2):865-896, 2018) of the free energy for a system of "two real replica" enables us to prove a quenched LDP for the overlap distribution, which gives us a wider criterion for slow mixing directly related to the Franz-Parisi-Virasoro approach (Franz et al. in J Phys I 2(10):1869-1880, 1992; Kurchan et al. J Phys I 3(8):1819-1838, 1993). This condition holds in a wider range of temperatures.

Electron refrigeration in hybrid structures with spin-split superconductors

Science.gov (United States)

Rouco, M.; Heikkilä, T. T.; Bergeret, F. S.

2018-01-01

Electron tunneling between superconductors and normal metals has been used for an efficient refrigeration of electrons in the latter. Such cooling is a nonlinear effect and usually requires a large voltage. Here we study the electron cooling in heterostructures based on superconductors with a spin-splitting field coupled to normal metals via spin-filtering barriers. The cooling power shows a linear term in the applied voltage. This improves the coefficient of performance of electron refrigeration in the normal metal by shifting its optimum cooling to lower voltage, and also allows for cooling the spin-split superconductor by reverting the sign of the voltage. We also show how tunnel coupling spin-split superconductors with regular ones allows for a highly efficient refrigeration of the latter.

Determination of nuclear spins of short-lived isotopes by laser induced fluorescence

International Nuclear Information System (INIS)

Buchinger, F.; Dabkiewicz, P.; Kremmling, H.; Kuehl, T.; Mueller, A.C.; Schuessler, H.A.

1980-01-01

The spins of several nuclear ground and isomeric states have been measured for a number of mercury isotopes. The fluorescent light from the 6s6p 3 P 1 state is observed at 2537 Angstroem after excitation with the frequency doubled output of a pulsed dye laser. Four different laser induced fluorescence techniques were tested for their applicability: double resonance, Hanle effect, time delayed integral Hanle beats, and time resolved quantum beats. The sensitivity and selectivity of these models are compared with emphasis on the determination of spins of nuclei far from beta-stability, where short half lives and low production yields restrict the number of available atoms. The experiments were carried out on-line with the ISOLDE isotope separator at CERN at densities as low as 10 6 atoms/cm 3 . Results for the very neutron deficient high spin mercury isomers with half lives of several seconds, but also for the ground states of the abundant low spin stable mercury isotopes, are given as examples. The test measurements determined the nuclear spins of the odd sup(185m-191m)Hg isomers to be I = 13/2. (orig.)

High and tunable spin current induced by magnetic-electric fields in a single-mode spintronic device

International Nuclear Information System (INIS)

Bala Kumar, S; Jalil, M B A; Tan, S G; Liang, G-C

2009-01-01

We proposed that a viable form of spin current transistor is one to be made from a single-mode device which passes electrons through a series of magnetic-electric barriers built into the device. The barriers assume a wavy spatial profile across the conduction path due to the inevitable broadening of the magnetic fields. Field broadening results in a linearly increasing vector potential across the conduction channel, which increases spin polarization. We have identified that the important factors for generating high spin polarization and conductance modulation are the low source-drain bias, the broadened magnetic fields, and the high number of FM gates within a fixed channel length.

Ultrathin Epitaxial Ferromagneticγ-Fe2O3Layer as High Efficiency Spin Filtering Materials for Spintronics Device Based on Semiconductors

KAUST Repository

Li, Peng; Xia, Chuan; Zhu, Zhiyong; Wen, Yan; Zhang, Qiang; Alshareef, Husam N.; Zhang, Xixiang

2016-01-01

In spintronics, identifying an effective technique for generating spin-polarized current has fundamental importance. The spin-filtering effect across a ferromagnetic insulating layer originates from unequal tunneling barrier heights for spin

Frequency multiplexing for readout of spin qubits

Energy Technology Data Exchange (ETDEWEB)

Hornibrook, J. M.; Colless, J. I.; Mahoney, A. C.; Croot, X. G.; Blanvillain, S.; Reilly, D. J., E-mail: david.reilly@sydney.edu.au [ARC Centre of Excellence for Engineered Quantum Systems, School of Physics, University of Sydney, Sydney, NSW 2006 (Australia); Lu, H.; Gossard, A. C. [Materials Department, University of California, Santa Barbara, California 93106 (United States)

2014-03-10

We demonstrate a low loss, chip-level frequency multiplexing scheme for readout of scaled-up spin qubit devices. By integrating separate bias tees and resonator circuits on-chip for each readout channel, we realise dispersive gate-sensing in combination with charge detection based on two radio frequency quantum point contacts. We apply this approach to perform multiplexed readout of a double quantum dot in the few-electron regime and further demonstrate operation of a 10-channel multiplexing device. Limitations for scaling spin qubit readout to large numbers of multiplexed channels are discussed.

Nucleon Form Factors Using Spin Degrees of Freedom

International Nuclear Information System (INIS)

Jones, Mark

2002-01-01

An overview of recent measurements of the neutron and proton electromagnetic form factors from double polarization experiments. Spin observables are sensitive to the product of nucleon form factor which allows access to the small nucleon electric form factors

Scaling Projections on Spin-Transfer Torque Magnetic Tunnel Junctions

Science.gov (United States)

Das, Debasis; Tulapurkar, Ashwin; Muralidharan, Bhaskaran

2018-02-01

We investigate scaling of technologically relevant magnetic tunnel junction devices in the trilayer and pentalayer configurations by varying the cross-sectional area along the transverse direction using the non-equilibrium Green's function spin transport formalism. We study the geometry dependence by considering square and circular cross-sections. As the transverse dimension in each case reduces, we demonstrate that the transverse mode energy profile plays a major role in the resistance-area product. Both types of devices show constant tunnel magnetoresistance at larger cross-sectional areas but achieve ultra-high magnetoresistance at small cross-sectional areas, while maintaining low resistance-area products. We notice that although the critical switching voltage for switching the magnetization of the free layer nanomagnet in the trilayer case remains constant at larger areas, it needs more energy to switch at smaller areas. In the pentalayer case, we observe an oscillatory behavior at smaller areas as a result of double barrier tunneling. We also describe how switching characteristics of both kinds of devices are affected by the scaling.

Specular Andreev reflection in graphene-based superconducting junction with substate-induced spin orbit interaction

International Nuclear Information System (INIS)

Bai, Chunxu; Yang, Yanling

2016-01-01

Based on the Dirac–Bogoliubov–de Gennes equation, the chirality-resolved transport properties through a ballistic graphene-based superconducting heterojunction with both the Rashba and the Dresselhaus spin orbit interaction have been investigated. Our results show that, in contrast to the retro-Andreev reflection suppressed by the spin orbit interaction (SOI), the specular Andreev reflection (SAR) can be enhanced largely by the SOI. Moreover, the Fabry–Perot interferences in the barrier region lead to the oscillating feature of the tunneling conductance. It is anticipated to apply the qualitative different results to diagnose the SAR in single layer graphene in the presence of both kinds of the SOI. - Highlights: • The retro-Andreev reflection in graphene is suppressed by the spin orbit interaction. • The specular Andreev reflection in graphene can be enhanced largely by the spin orbit interaction. • The Fabry–Perot interferences in the graphene-based barrier lead to the oscillating feature of the tunneling conductance. • The spin orbit interaction is also vital in diagnosing the specular Andreev reflection in graphene.

Specular Andreev reflection in graphene-based superconducting junction with substate-induced spin orbit interaction

Energy Technology Data Exchange (ETDEWEB)

Bai, Chunxu, E-mail: chunxu_bai@semi.ac.cn [School of Physics, Anyang Normal University, Anyang 455000 (China); Yang, Yanling [School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083 (China); School of Physics, Anyang Normal University, Anyang 455000 (China)

2016-08-26

Based on the Dirac–Bogoliubov–de Gennes equation, the chirality-resolved transport properties through a ballistic graphene-based superconducting heterojunction with both the Rashba and the Dresselhaus spin orbit interaction have been investigated. Our results show that, in contrast to the retro-Andreev reflection suppressed by the spin orbit interaction (SOI), the specular Andreev reflection (SAR) can be enhanced largely by the SOI. Moreover, the Fabry–Perot interferences in the barrier region lead to the oscillating feature of the tunneling conductance. It is anticipated to apply the qualitative different results to diagnose the SAR in single layer graphene in the presence of both kinds of the SOI. - Highlights: • The retro-Andreev reflection in graphene is suppressed by the spin orbit interaction. • The specular Andreev reflection in graphene can be enhanced largely by the spin orbit interaction. • The Fabry–Perot interferences in the graphene-based barrier lead to the oscillating feature of the tunneling conductance. • The spin orbit interaction is also vital in diagnosing the specular Andreev reflection in graphene.

Spin Physics at COMPASS

International Nuclear Information System (INIS)

Schill, Christian

2012-01-01

The COMPASS experiment is a fixed target experiment at the CERN SPS using muon and hadron beams for the investigation of the spin structure of the nucleon and hadron spectroscopy. The main objective of the muon physics program is the study of the spin of the nucleon in terms of its constituents, quarks and gluons. COMPASS has accumulated data during 6 years scattering polarized muons off longitudinally or transversely polarized deuteron ( 6 LiD) or proton (NH 3 ) targets. Results for the gluon polarization are obtained from longitudinal double spin cross section asymmetries using two different channels, open charm production and high transverse momentum hadron pairs, both proceeding through the photon-gluon fusion process. Also, the longitudinal spin structure functions of the proton and the deuteron were measured in parallel as well as the helicity distributions for the three lightest quark flavours. With a transversely polarized target, results were obtained with proton and deuteron targets for the Collins and Sivers asymmetries for charged hadrons as well as for identified kaons and pions. The Collins asymmetry is sensitive to the transverse spin structure of the nucleon, while the Sivers asymmetry reflects correlations between the quark transverse momentum and the nucleon spin. Recently, a new proposal for the COMPASS II experiment was accepted by the CERN SPS which includes two new topics: Exclusive reactions like DVCS and DVMP using the muon beam and a hydrogen target to study generalized parton distributions and Drell-Yan measurements using a pion beam and a polarized NH 3 target to study transverse momentum dependent distributions.

Interaction of spin and vibrations in transport through single-molecule magnets

Directory of Open Access Journals (Sweden)

Falk May

2011-10-01

Full Text Available We study electron transport through a single-molecule magnet (SMM and the interplay of its anisotropic spin with quantized vibrational distortions of the molecule. Based on numerical renormalization group calculations we show that, despite the longitudinal anisotropy barrier and small transverse anisotropy, vibrational fluctuations can induce quantum spin-tunneling (QST and a QST-Kondo effect. The interplay of spin scattering, QST and molecular vibrations can strongly enhance the Kondo effect and induce an anomalous magnetic field dependence of vibrational Kondo side-bands.

Bias voltage dependence of magnetic tunnel junctions comprising amorphous ferromagnetic CoFeSiB layer with double barriers

International Nuclear Information System (INIS)

Yim, H.I.; Lee, S.Y.; Hwang, J.Y.; Rhee, J.R.; Chun, B.S.; Wang, K.L.; Kim, Y.K.; Kim, T.W.; Lee, S.S.; Hwang, D.G.

2008-01-01

Double-barrier magnetic tunnel junctions (DMTJs) with and without an amorphous ferromagnetic material such as CoFeSiB 10, CoFe 5/CoFeSiB 5, and CoFe 10 (nm) were prepared and compared to investigate the bias voltage dependence of the tunneling magnetoresistance (TMR) ratio. Typical DMTJ structures were Ta 45/Ru 9.5/IrMn 10/CoFe 7/AlO x /free layer 10/AlO x /CoFe 7/IrMn 10/Ru 60 (in nanometers). The interlayer coupling field and the normalized TMR ratios at the applied voltages of +0.4 and -0.4 V of the amorphous CoFeSiB free-layer DMTJ offer lower and higher values than that of the polycrystalline CoFe free-layer DMTJ, respectively. An amorphous ferromagnetic CoFeSiB layer improves the interface roughness of the free layer/tunnel barrier and, as a result, the interlayer coupling field and bias voltage dependence of the TMR ratio are suppressed at a given voltage. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Double-trace flows and the swampland

Science.gov (United States)

Giombi, Simone; Perlmutter, Eric

2018-03-01

We explore the idea that large N, non-supersymmetric conformal field theories with a parametrically large gap to higher spin single-trace operators may be obtained as infrared fixed points of relevant double-trace deformations of superconformal field theories. After recalling the AdS interpretation and some potential pathologies of such flows, we introduce a concrete example that appears to avoid them: the ABJM theory at finite k, deformed by \\int O^2, where O is the superconformal primary in the stress-tensor multiplet. We address its relation to recent conjectures based on weak gravity bounds, and discuss the prospects for a wider class of similarly viable flows. Next, we proceed to analyze the spectrum and correlation functions of the putative IR CFT, to leading non-trivial order in 1 /N. This includes analytic computations of the change under double-trace flow of connected four-point functions of ABJM superconformal primaries; and of the IR anomalous dimensions of infinite classes of double-trace composite operators. These would be the first analytic results for anomalous dimensions of finite-spin composite operators in any large N CFT3 with an Einstein gravity dual.

Manipulating the spin states in a double molecular magnets tunneling junction

Energy Technology Data Exchange (ETDEWEB)

Jiang, Liang; Liu, Xi [National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093 (China); Zhang, Zhengzhong, E-mail: zeikeezhang@126.com [National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093 (China); Nano Science and Technology Institute, University of Science and Technology of China, Suzhou 215123 (China); Wang, Ruiqiang [Laboratory of Quantum Engineering and Quantum Materials, South China Normal University, Guangzhou 510006 (China)

2014-01-17

We theoretically explore the spin transport through nano-structures consisting of two serially coupled single-molecular magnets (SMM) sandwiched between two nonmagnetic electrodes. We find that the magnetization of SMM can be controlled by the spin transfer torque with respect to the bias voltage direction, and the electron current can be switched on/off in different magnetic structures. Such a manipulation is performed by full electrical manner, and needs neither external magnetic field nor ferromagnetic electrodes in the tunneling junction. The proposal device scheme can be realized with the use of the present technology and has potential applications in molecular spintronics or quantum information processing.

Manipulating the spin states in a double molecular magnets tunneling junction

Science.gov (United States)

Jiang, Liang; Liu, Xi; Zhang, Zhengzhong; Wang, Ruiqiang

2014-01-01

We theoretically explore the spin transport through nano-structures consisting of two serially coupled single-molecular magnets (SMM) sandwiched between two nonmagnetic electrodes. We find that the magnetization of SMM can be controlled by the spin transfer torque with respect to the bias voltage direction, and the electron current can be switched on/off in different magnetic structures. Such a manipulation is performed by full electrical manner, and needs neither external magnetic field nor ferromagnetic electrodes in the tunneling junction. The proposal device scheme can be realized with the use of the present technology [6] and has potential applications in molecular spintronics or quantum information processing.

Low frequency noise in asymmetric double barrier magnetic tunnel junctions with a top thin MgO layer

International Nuclear Information System (INIS)

Guo Hui-Qiang; Tang Wei-Yue; Liu Liang; Wei Jian; Li Da-Lai; Feng Jia-Feng; Han Xiu-Feng

2015-01-01

Low frequency noise has been investigated at room temperature for asymmetric double barrier magnetic tunnel junctions (DBMTJs), where the coupling between the top and middle CoFeB layers is antiferromagnetic with a 0.8-nm thin top MgO barrier of the CoFeB/MgO/CoFe/CoFeB/MgO/CoFeB DBMTJ. At enough large bias, 1/f noise dominates the voltage noise power spectra in the low frequency region, and is conventionally characterized by the Hooge parameter α mag . With increasing external field, the top and bottom ferromagnetic layers are aligned by the field, and then the middle free layer rotates from antiparallel state (antiferromagnetic coupling between top and middle ferromagnetic layers) to parallel state. In this rotation process α mag and magnetoresistance-sensitivity-product show a linear dependence, consistent with the fluctuation dissipation relation. With the magnetic field applied at different angles (θ) to the easy axis of the free layer, the linear dependence persists while the intercept of the linear fit satisfies a cos(θ) dependence, similar to that for the magnetoresistance, suggesting intrinsic relation between magnetic losses and magnetoresistance. (rapid communication)

Strontium ruthenate–anatase titanium dioxide heterojunctions from first-principles: Electronic structure, spin, and interface dipoles

Energy Technology Data Exchange (ETDEWEB)

Ferdous, Naheed; Ertekin, Elif, E-mail: ertekin@illinois.edu [Department of Mechanical Science and Engineering, University of Illinois at Urbana-Champaign, 1206 W Green Street, Urbana, Illinois 61801 (United States)

2016-07-21

The epitaxial integration of functional oxides with wide band gap semiconductors offers the possibility of new material systems for electronics and energy conversion applications. We use first principles to consider an epitaxial interface between the correlated metal oxide SrRuO{sub 3} and the wide band gap semiconductor TiO{sub 2}, and assess energy level alignment, interfacial chemistry, and interfacial dipole formation. Due to the ferromagnetic, half-metallic character of SrRuO{sub 3}, according to which only one spin is present at the Fermi level, we demonstrate the existence of a spin dependent band alignment across the interface. For two different terminations of SrRuO{sub 3}, the interface is found to be rectifying with a Schottky barrier of ≈1.3–1.6 eV, in good agreement with experiment. In the minority spin, SrRuO{sub 3} exhibits a Schottky barrier alignment with TiO{sub 2} and our calculated Schottky barrier height is in excellent agreement with previous experimental measurements. For majority spin carriers, we find that SrRuO{sub 3} recovers its exchange splitting gap and bulk-like properties within a few monolayers of the interface. These results demonstrate a possible approach to achieve spin-dependent transport across a heteroepitaxial interface between a functional oxide material and a conventional wide band gap semiconductor.

Spin magneto-transport in a Rashba-Dresselhaus quantum channel with single and double finger gates

Science.gov (United States)

Tang, Chi-Shung; Keng, Jia-An; Abdullah, Nzar Rauf; Gudmundsson, Vidar

2017-05-01

We address spin-resolved electronic transport properties in a Rashba-Dresselhaus quantum channel in the presence of an in-plane magnetic field. The strong Rashba-Dresselhaus effect induces an asymmetric spin-splitting energy spectrum with a spin-orbit-Zeeman gap. This asymmetric fact in energy spectrum may result in various quantum dynamic features in conductance due to the presence of finger gates. This asymmetric spin-splitting energy spectrum results in a bound state in continuum for electrons within ultralow energy regime with binding energies in order of 10-1 meV.

concentration on spin-dependent resonant tunnelling in InAs/Ga1 ...

Indian Academy of Sciences (India)

Cent percentage polarization can be obtained in this strained non-magnetic double-barrier ... Keywords. Spin–orbit interaction; barrier transparency; polarization efficiency; tunnelling lifetime. 1. Introduction ..... Figure 6. Tunnelling lifetime vs.

Large magnetization and frustration switching of magnetoresistance in the double-perovskite ferrimagnet Mn2FeReO6.

Science.gov (United States)

Arévalo-López, Angel M; McNally, Graham M; Attfield, J Paul

2015-10-05

Ferrimagnetic A2 BB'O6 double perovskites, such as Sr2 FeMoO6 , are important spin-polarized conductors. Introducing transition metals at the A-sites offers new possibilities to increase magnetization and tune magnetoresistance. Herein we report a ferrimagnetic double perovskite, Mn2 FeReO6 , synthesized at high pressure which has a high Curie temperature of 520 K and magnetizations of up to 5.0 μB which greatly exceed those for other double perovskite ferrimagnets. A novel switching transition is discovered at 75 K where magnetoresistance changes from conventional negative tunneling behavior to large positive values, up to 265 % at 7 T and 20 K. Neutron diffraction shows that the switch is driven by magnetic frustration from antiferromagnetic Mn(2+) spin ordering which cants Fe(3+) and Re(5+) spins and reduces spin-polarization. Ferrimagnetic double perovskites based on A-site Mn(2+) thus offer new opportunities to enhance magnetization and control magnetoresistance in spintronic materials. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Constraining Δ G at Low-x with Double Longitudinal Spin Asymmetries for Forward Hadron and Di-Hadron Pairs in PHENIX

Science.gov (United States)

Wolin, Scott; Phenix Collaboration

2011-10-01

The gluon polarization, ΔG =∫01 g(x) dx , is constrained in the region 0 . 05 double spin asymmetries, ALL, for inclusive hadron and jet production at mid-rapidity at RHIC. Theoretical analysis of experimental results shows that ∫0. 05 0 . 2 Δg(x) dx = 0 .013-0 . 120 + 0 . 106 . This is not large enough to account for the missing proton spin. However, Δg(x) is unconstrained at low-x, and a measurement sensitive to this region will provide important input for future global analyses. The measurement of ALL for inclusive hadrons and di-hadrons with the Muon Piston Calorimeter (MPC) 3 . 1 < η < 3 . 9 provides this sensitivity down to x 10-3 and will lead to the first constraints of Δg(x) at x < 0 . 05 . The di-hadron measurement is especially interesting as it is sensitive to the sign of ΔG and best constrains the parton kinematics giving the most precise access to xgluon. The inclusive measurement provides a looser constraint on the event kinematics but has a higher yield. We will present the status of these measurements for the 2009 dataset at √{ s} = 500 GeV and √{ s} = 200 GeV.

Pion double charge exchange in the Δ33 resonance region

International Nuclear Information System (INIS)

Wirzba, A.; Toki, H.; Siciliano, E.R.; Johnson, M.B.; Gilman, R.

1989-01-01

We examine the model dependence and nuclear-structure sensitivity of several Δ 33 -dominated processes contributing to pion double charge exchange on nuclei in the region of the Δ 33 resonance. These processes include the Δ 33 -nucleon interaction V NΔ and sequential scattering, in which the pion undergoes single charge exchange on two different nucleons. In all cases, the scattering takes place through the exchange of an intermediate π and ρ meson. Sequential-mediated double charge exchange is found to be only moderately sensitive to short-range correlations, meson-nucleon form factors, and the rho meson, whereas V NΔ -mediated double charge exchange is very sensitive to all these effects. Results are given for double charge exchange on 18 O (double isobaric analog transitions) and 16 O (nonanalog transitions). Sequential double charge exchange is shown to favor non-spin-flip matrix elements of the transition operator whereas V NΔ -mediated double charge exchange favors spin-flip matrix elements. The energy dependence of the zero-degree cross sections for V NΔ and sequential scattering are also different: Sequential tends to increase monotonically from 100 to 300 MeV, whereas V NΔ peaks at about 150 MeV. The delta-nucleon interaction is found likely to dominate over sequential scattering in nonanalog double charge exchange. The V NΔ is also large in analog double charge exchange, but it does not enable us to explain the anomalous behavior of the 18 O differential cross sections

Overview of spin physics

International Nuclear Information System (INIS)

Yokosawa, A.

1992-01-01

Spin physics activities at medium and high energies became significantly active when polarized targets and polarized beams became accessible for hadron-hadron scattering experiments. My overview of spin physics will be inclined to the study of strong interaction using facilities at Argonne ZGS, Brookhaven AGS (including RHIC), CERN, Fermilab, LAMPF, an SATURNE. In 1960 accelerator physicists had already been convinced that the ZGS could be unique in accelerating a polarized beam; polarized beams were being accelerated through linear accelerators elsewhere at that time. However, there was much concern about going ahead with the construction of a polarized beam because (i) the source intensity was not high enough to accelerate in the accelerator, (ii) the use of the accelerator would be limited to only polarized-beam physics, that is, proton-proton interaction, and (iii) p-p elastic scattering was not the most popular topic in high-energy physics. In fact, within spin physics, π-nucleon physics looked attractive, since the determination of spin and parity of possible πp resonances attracted much attention. To proceed we needed more data beside total cross sections and elastic differential cross sections; measurements of polarization and other parameters were urgently needed. Polarization measurements had traditionally been performed by analyzing the spin of recoil protons. The drawbacks of this technique are: (i) it involves double scattering, resulting in poor accuracy of the data, and (ii) a carbon analyzer can only be used for a limited region of energy

Electron transport and noise spectroscopy in organic magnetic tunnel junctions with PTCDA and Alq3 barriers

Science.gov (United States)

Martinez, Isidoro; Cascales, Juan Pedro; Hong, Jhen-Yong; Lin, Minn-Tsong; Prezioso, Mirko; Riminucci, Alberto; Dediu, Valentin A.; Aliev, Farkhad G.

2016-10-01

The possible influence of internal barrier dynamics on spin, charge transport and their fluctuations in organic spintronics remains poorly understood. Here we present investigation of the electron transport and low frequency noise at temperatures down to 0.3K in magnetic tunnel junctions with an organic PTCDA barriers with thickness up to 5 nm in the tunneling regime and with 200 nm thick Alq3 barrier in the hopping regime. We observed high tunneling magneto-resistance at low temperatures (15-40%) and spin dependent super-poissonian shot noise in organic magnetic tunnel junctions (OMTJs) with PTCDA. The Fano factor exceeds 1.5-2 values which could be caused by interfacial states controlled by spin dependent bunching in the tunneling events through the molecules.1 The bias dependence of the low frequency noise in OMTJs with PTCDA barriers which includes both 1/f and random telegraph noise activated at specific biases will also be discussed. On the other hand, the organic junctions with ferromagnetic electrodes and thick Alq3 barriers present sub-poissonian shot noise which depends on the temperature, indicative of variable range hopping.

Voltage switching technique for detecting nuclear spin polarization in a quantum dot

International Nuclear Information System (INIS)

Takahashi, Ryo; Kono, Kimitoshi; Tarucha, Seigo; Ono, Keiji

2010-01-01

We have introduced a source-drain voltage switching technique for studying nuclear spins in a vertical double quantum dot. Switching the source-drain voltage between the spin-blockade state and the zero-bias Coulomb blockade state can tune the energy difference between the spin singlet and triplet, and effectively turn on/off the hyperfine interaction. Since the change in the nuclear spin state affects the source-drain current, nuclear spin properties can only be detected by transport measurement. Using this technique, we have succeeded in measuring the timescale of nuclear spin depolarization. Furthermore, combining this technique and an RF ac magnetic field, we successfully detected continuous-wave NMR signals of 75 As, 69 Ga, and 71 Ga, which are contained in a quantum dot. (author)

Room-temperature coupling between electrical current and nuclear spins in OLEDs

Science.gov (United States)

Malissa, H.; Kavand, M.; Waters, D. P.; van Schooten, K. J.; Burn, P. L.; Vardeny, Z. V.; Saam, B.; Lupton, J. M.; Boehme, C.

2014-09-01

The effects of external magnetic fields on the electrical conductivity of organic semiconductors have been attributed to hyperfine coupling of the spins of the charge carriers and hydrogen nuclei. We studied this coupling directly by implementation of pulsed electrically detected nuclear magnetic resonance spectroscopy in organic light-emitting diodes (OLEDs). The data revealed a fingerprint of the isotope (protium or deuterium) involved in the coherent spin precession observed in spin-echo envelope modulation. Furthermore, resonant control of the electric current by nuclear spin orientation was achieved with radiofrequency pulses in a double-resonance scheme, implying current control on energy scales one-millionth the magnitude of the thermal energy.

Formation of very short pulse by neutron spin flip chopper for J-PARC

International Nuclear Information System (INIS)

Ebisawa, T.; Soyama, K.; Yamazaki, D.; Tasaki, S.; Sakai, K.; Oku, T.; Maruyama, R.; Hino, M.

2004-01-01

We have developed neutron spin flip choppers with high S/N ratio and high intensity for pulsed sources using multi-stage spin flip choppers. It is not easy for us to obtain a very short neutron pulse less than 10 μs using a spin flip chopper, due to the time constant L/R in the normal LR circuit. We will discuss a method obtaining a very short neutron pulse applying the modified push-pull circuit proposed by Ito and Takahashi [4] to the double spin flip chopper with polarizing guides

Optical and microwave control of germanium-vacancy center spins in diamond

Science.gov (United States)

Siyushev, Petr; Metsch, Mathias H.; Ijaz, Aroosa; Binder, Jan M.; Bhaskar, Mihir K.; Sukachev, Denis D.; Sipahigil, Alp; Evans, Ruffin E.; Nguyen, Christian T.; Lukin, Mikhail D.; Hemmer, Philip R.; Palyanov, Yuri N.; Kupriyanov, Igor N.; Borzdov, Yuri M.; Rogers, Lachlan J.; Jelezko, Fedor

2017-08-01

A solid-state system combining a stable spin degree of freedom with an efficient optical interface is highly desirable as an element for integrated quantum-optical and quantum-information systems. We demonstrate a bright color center in diamond with excellent optical properties and controllable electronic spin states. Specifically, we carry out detailed optical spectroscopy of a germanium-vacancy (GeV ) color center demonstrating optical spectral stability. Using an external magnetic field to lift the electronic spin degeneracy, we explore the spin degree of freedom as a controllable qubit. Spin polarization is achieved using optical pumping, and a spin relaxation time in excess of 20 μ s is demonstrated. We report resonant microwave control of spin transitions, and use this as a probe to measure the Autler-Townes effect in a microwave-optical double-resonance experiment. Superposition spin states were prepared using coherent population trapping, and a pure dephasing time of about 19 ns was observed at a temperature of 2.0 K.

Sub-barrier photofission of 238U

International Nuclear Information System (INIS)

Bhandari, B.S.

Photofission cross section of 238 U below threshold have been calculated using a double humped potential barrier parameterized by smoothly joining four parabolas, and a coulomb potential at and beyond the scission point. Relative strength in the fission channel has been calculated and an attempt has been made to interpret the apparent resonance structures observed recently in photofission experiments of 238 U as excited states of the fission isomer. A set of parameters for a double humped barrier are found which are consistent with known spontaneous fission and isomeric fission half lives. In addition to reproducing satisfactorily the observed resonance structure near threshold, the calculation also predicts several low energy resonances in the cross sections [pt

Study of Double Spin Asymmetries in Inclusive ep Scattering at Jefferson Lab

Energy Technology Data Exchange (ETDEWEB)

Kang, Hoyoung [Seoul National Univ. (Korea, Republic of)

2014-08-01

The spin structure of the proton has been investigated in the high Bjorken x and low momentum transfer Q² region. We used Jefferson Lab's polarized electron beam, a polarized target, and a spectrometer to get both the parallel and perpendicular spin asymmetries Apar and Aperp. These asymmetries produced the physics asymmetries A_1 and A_2 and spin structure functions g_1 and g_2. We found Q² dependences of the asymmetries at resonance region and higher-twist effects. Our result increases the available data on the proton spin structure, especially at resonance region with low Q². Moreover, A_2 and g_2 data show clear Q² evolution, comparing with RSS and SANE-BETA. Negative resonance in A_2 data needs to be examined by theory. It can be an indication of very negative transverse-longitudinal interference contribution at W ~ 1.3 GeV. Higher twist effect appears at the low Q² of 1.9 GeV², although it is less significant than lower Q² data of RSS. Twist03 matrix element d_2 was calculated using our asymmetry fits evaluation at Q² – 1.9 GeV². D-bar_2 = -0.0087±0.0014 was obtained by integrating 0.47 ≤ x ≤ 0.87.

Dynamical Properties of a Diluted Dipolar-Interaction Heisenberg Spin Glass

International Nuclear Information System (INIS)

Zhang Kai-Cheng; Liu Yong; Chi Feng

2014-01-01

Up to now the chirality is seldom studied in the diluted spin glass although many investigations have been performed on the site-ordered Edwards—Anderson model. By simulation, we investigate the dynamical properties of both the spin-glass and the chiral-glass phases in a diluted dipolar system, which was manifested to have a spin-glass transition by recent numerical study. By scaling we find that both phases have the same aging behavior and closer aging parameter μ. Similarly, the domains grow in the same way and both phases have a closer barrier exponent Ψ. It means that both the spins and the chirality have the same dynamical properties and they may freeze at the same temperature. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

Analytic Models for Sunlight Charging of a Rapidly Spinning Satellite

National Research Council Canada - National Science Library

Tautz, Maurice

2003-01-01

... photoelectrons can be blocked by local potential barriers. In this report, we discuss two analytic models for sunlight charging of a rapidly spinning spherical satellite, both of which are based on blocked photoelectron currents...

Robust spin transfer torque in antiferromagnetic tunnel junctions

KAUST Repository

Saidaoui, Hamed Ben Mohamed

2017-04-18

We theoretically study the current-induced spin torque in antiferromagnetic tunnel junctions, composed of two semi-infinite antiferromagnetic layers separated by a tunnel barrier, in both clean and disordered regimes. We find that the torque enabling electrical manipulation of the Néel antiferromagnetic order parameter is out of plane, ∼n×p, while the torque competing with the antiferromagnetic exchange is in plane, ∼n×(p×n). Here, p and n are the Néel order parameter direction of the reference and free layers, respectively. Their bias dependence shows behavior similar to that in ferromagnetic tunnel junctions, the in-plane torque being mostly linear in bias, while the out-of-plane torque is quadratic. Most importantly, we find that the spin transfer torque in antiferromagnetic tunnel junctions is much more robust against disorder than that in antiferromagnetic metallic spin valves due to the tunneling nature of spin transport.

Quantum description of spin tunneling in magnetic molecules

Science.gov (United States)

Galetti, D.

2007-01-01

Starting from a phenomenological Hamiltonian originally written in terms of angular momentum operators we derive a new quantum angle-based Hamiltonian that allows for a discussion on the quantum spin tunneling. The study of the applicability of the present approach, carried out in calculations with a soluble quasi-spin model, shows that we are allowed to use our method in the description of physical systems such as the Mn12-acetate molecule, as well as the octanuclear iron cluster, Fe8, in a reliable way. With the present description the interpretation of the spin tunneling is seen to be direct, the spectra and energy barriers of those systems are obtained, and it is shown that they agree with the experimental ones.

Mn concentration and quantum size effects on spin-polarized transport through CdMnTe based magnetic resonant tunneling diode.

Science.gov (United States)

Mnasri, S; Abdi-Ben Nasrallahl, S; Sfina, N; Lazzari, J L; Saïd, M

2012-11-01

Theoretical studies on spin-dependent transport in magnetic tunneling diodes with giant Zeeman splitting of the valence band are carried out. The studied structure consists of two nonmagnetic layers CdMgTe separated by a diluted magnetic semiconductor barrier CdMnTe, the hole is surrounded by two p-doped CdTe layers. Based on the parabolic valence band effective mass approximation and the transfer matrix method, the magnetization and the current densities for holes with spin-up and spin-down are studied in terms of the Mn concentration, the well and barrier thicknesses as well as the voltage. It is found that, the current densities depend strongly on these parameters and by choosing suitable values; this structure can be a good spin filter. Such behaviors are originated from the enhancement and suppression in the spin-dependent resonant states.

Spin flipping in ring-coupled-cluster-doubles theory

DEFF Research Database (Denmark)

Klopper, Wim; M. Teale, Andrew; Coriani, Sonia

2011-01-01

We report a critical analysis and comparison of a variety of random-phase-approximation (RPA) based approaches to determine the electronic ground-state energy. Interrelations between RPA variants are examined by numerical examples with particular attention paid to the role of spin......-flipped excitations and the behaviour of the adiabatic-connection integrands where appropriate. In general, it is found that RPA variants that include Hartree–Fock exchange contributions are unsuitable as generally applicable methods for the determination of correlation energies. Of the remaining methods only...... the direct RPA and RPA with second-order screened exchange are recommended for general use....

Simulating merging binary black holes with nearly extremal spins

International Nuclear Information System (INIS)

Lovelace, Geoffrey; Scheel, Mark A.; Szilagyi, Bela

2011-01-01

Astrophysically realistic black holes may have spins that are nearly extremal (i.e., close to 1 in dimensionless units). Numerical simulations of binary black holes are important tools both for calibrating analytical templates for gravitational-wave detection and for exploring the nonlinear dynamics of curved spacetime. However, all previous simulations of binary-black-hole inspiral, merger, and ringdown have been limited by an apparently insurmountable barrier: the merging holes' spins could not exceed 0.93, which is still a long way from the maximum possible value in terms of the physical effects of the spin. In this paper, we surpass this limit for the first time, opening the way to explore numerically the behavior of merging, nearly extremal black holes. Specifically, using an improved initial-data method suitable for binary black holes with nearly extremal spins, we simulate the inspiral (through 12.5 orbits), merger and ringdown of two equal-mass black holes with equal spins of magnitude 0.95 antialigned with the orbital angular momentum.

Large-amplitude superexchange of high-spin fermions in optical lattices

International Nuclear Information System (INIS)

Jürgensen, Ole; Heinze, Jannes; Lühmann, Dirk-Sören

2013-01-01

We show that fermionic high-spin systems with spin-changing collisions allow one to monitor superexchange processes in optical superlattices with large amplitudes and strong spin fluctuations. By investigating the non-equilibrium dynamics, we find a superexchange dominated regime at weak interactions. The underlying mechanism is driven by an emerging tunneling-energy gap in shallow few-well potentials. As a consequence, the interaction-energy gap that is expected to occur only for strong interactions in deep lattices is re-established. By tuning the optical lattice depth, a crossover between two regimes with negligible particle number fluctuations is found: firstly, the common regime with vanishing spin-fluctuations in deep lattices and, secondly, a novel regime with strong spin fluctuations in shallow lattices. We discuss the possible experimental realization with ultracold 40 K atoms and observable quantities in double wells and two-dimensional plaquettes. (paper)

A novel GaN HEMT with double recessed barrier layer for high efficiency-energy applications

Science.gov (United States)

Jia, Hujun; Luo, Yehui; Wu, Qiuyuan; Yang, Yintang

2017-11-01

In this paper, a novel GaN HEMT with high efficiency-energy characteristic is proposed. Different from the conventional structure, the proposed structure contains double recessed barriers layer (DRBL) beside the gate. The key idea in this work is to improve the microwave output characteristics. The simulated results show that the drain saturation current and peak transconductance of DRBL GaN HEMT is slightly decreased, the transconductance saturation flatness is increased by 0.5 V and the breakdown voltage is also enhanced too. Due to the both recessed barrier layer, the gate-drain/gate-source capacitance is decreased by 6.3% and 11.3%, respectively. The RF simulated results show that the maximum oscillation frequency for DRBL GaN HEMT is increased from 57 GHz to 64 GHz and the saturation power density is 8.7 W/mm at 600 MHz, 6.9 W/mm at 1200 MHz with the higher power added efficiency (PAE). Further investigation show that DRBL GaN HEMT can achieve to 6.4 W/mm and the maximum PAE 83.8% at 2400 MHz. Both are higher than the 5.0 W/mm and 80.3% for the conventional structure. When the operating frequency increases to X band, the DRBL GaN HEMT still exhibits the superior output performances. All the results show that the advantages and the potential capacities of DRBL GaN HEMT at high efficiency-energy are greater than the conventional GaN HEMT.

Characteristics of powdered activated carbon treated with dielectric barrier discharge for electric double-layer capacitors

International Nuclear Information System (INIS)

Tashima, Daisuke; Yoshitama, Hiromu; Sakoda, Tatsuya; Okazaki, Akihito; Kawaji, Takayuki

2012-01-01

Highlights: ► The specific capacitance of the EDLCs could be improved by oxygen plasma treatment. ► 15 s treated EDLCs showed a 20% increase in capacitance relative to untreated EDLCs. ► The plasma treatment yields EDLCs that are suitable for high-energy applications. - Abstract: The electrochemical properties of electric double-layer capacitors (EDLCs) made with plasma-treated powdered activated carbon (treated using a dielectric barrier discharge) were examined using cyclic voltammetry (CV), Cole–Cole plots, and X-ray photoelectron spectroscopy (XPS). The dielectric barrier discharge method, which operates at atmospheric pressure, dramatically reduces the processing time and does not require vacuum equipment, making it a more practical alternative than low-pressure plasma treatment. The experimental data indicate that the specific capacitance of the EDLCs could be improved by oxygen plasma treatment. Capacitance of EDLCs made with activated carbon treated for 15 s showed 193.5 F/g that 20% increase in the specific capacitance relative to untreated EDLCs. This result indicates that the plasma treatment yields EDLCs that are suitable for high-energy applications. The enhancement of capacitance was mainly attributed to an increase in the BET surface area of the activated carbon and the creation of carboxyl groups on the surface of the carbon. The carboxyl groups induced oxidation–reduction reactions in the presence of O 2 which was included in the operation gas. In addition, the carboxyl groups improved the penetration of the electrolyte solution into the carbon electrodes.

Dynamical Monte Carlo investigation of spin reversals and nonequilibrium magnetization of single-molecule magnets

OpenAIRE

Liu, Gui-Bin; Liu, Bang-Gui

2010-01-01

In this paper, we combine thermal effects with Landau-Zener (LZ) quantum tunneling effects in a dynamical Monte Carlo (DMC) framework to produce satisfactory magnetization curves of single-molecule magnet (SMM) systems. We use the giant spin approximation for SMM spins and consider regular lattices of SMMs with magnetic dipolar interactions (MDI). We calculate spin reversal probabilities from thermal-activated barrier hurdling, direct LZ tunneling, and thermal-assisted LZ tunnelings in the pr...

Spin interferometry and phase relations in three level systems

International Nuclear Information System (INIS)

Mehring, M.; Stoll, M.E.; Wolff, E.K.

1978-01-01

The sign of the wavefunctions of deuterium, a spin-1 nucleus, under a 2π rotation (spinor character) has been studied with using a single crystal of 98% deuterated hexamethyl-benzene (HMB, C 6 (CD 3 ) 6 ). In a large magnetic fields, the three energy levels of the Zeeman hamiltonian have equal spacing, whereas unequivalent transition frequencies may occur if a suitable quadrupolar interaction is included. Three types of experiment are discussed. Simultaneous irradiation of both transitions with a field strength ω 1 in the x direction verified spin-locking, quadrature, or phase variation; consecutive irradiation at both transition with π-pulses showed coherence transfer from transition 1-2 to the forbidden transition 1-3; double quantum spinor behavior was demonstrated by applying rf field of strength ω 1 = γH 1 at the 'double quantum transition' frequency ω 0

Tunneling conductance of a two-dimensional electron gas with Dresselhaus spin-orbit coupling

International Nuclear Information System (INIS)

Srisongmuang, B.; Ka-oey, A.

2012-01-01

We theoretically studied the spin-dependent charge transport in a two-dimensional electron gas with Dresselhaus spin-orbit coupling (DSOC) and metal junctions. It is shown that the DSOC energy can be directly measured from the tunneling conductance spectrum. We found that spin polarization of the conductance in the propagation direction can be obtained by injecting from the DSOC system. We also considered the effect of the interfacial scattering barrier (both spin-flip and non-spin-flip scattering) on the overall conductance and the spin polarization of the conductance. It is found that the increase of spin-flip scattering can enhance the conductance under certain conditions. Moreover, both types of scattering can increase the spin polarization below the branches crossing of the energy band. - Highlights: → DSOC energy can be directly measured from tunneling conductance spectrum. → Spin polarization of conductance in the propagation direction can be obtained by injecting from DSOC system. → Both types of scattering can increase spin polarization.

H + H2 reaction barrier: A fixed-node quantum Monte Carlo study

International Nuclear Information System (INIS)

Barnett, R.N.; Reynolds, P.J.; Lester, W.A. Jr.

1985-01-01

The classical barrier height for the H+H 2 exchange reaction, as well as the energies at two other points along the reaction path, are calculated using fixed-node quantum Monte Carlo (FNQMC). Several single-determinant importance functions are used at the saddle point in order to relate the quality of the importance function to the accuracy and precision of the final result. The computed barrier is an upper bound since the energy of H and of H 2 is obtained exactly by FNQMC. Our best upper bound (9.70 +- 0.13 kcal/mol) has a mean within 0.1 kcal/mol of the presumed exact value. This best bound is obtained with a single determinant, double-zeta basis importance function. Contrary to experience with expansion methods, it is found that an importance function with a basis set of near Hartree--Fock quality, as well as one derived from a spin-unrestricted SCF calculation, are among the least efficient and least accurate of the importance functions used. Specifically, a nodal surface appearing in the lowest energy molecular orbital in these functions apparently increases the FNQMC energy. The FNQMC energy at the two other points along the reaction path is found to agree with the most accurate CI results of Liu to within statistical error

New insights into nano-magnetism by spin-polarized scanning tunneling microscopy

Energy Technology Data Exchange (ETDEWEB)

Sander, Dirk, E-mail: sander@mpi-halle.de [Max-Planck-Institut für Mikrostrukturphysik, Weinberg 2, D-06120 Halle/Saale (Germany); Oka, Hirofumi; Corbetta, Marco; Stepanyuk, Valeri; Kirschner, Jürgen [Max-Planck-Institut für Mikrostrukturphysik, Weinberg 2, D-06120 Halle/Saale (Germany)

2013-08-15

Highlights: ► We measure the magnetization reversal of individual nm small Co island by spin-STM. ► We identify an inhomogeneous magnetic anisotropy within a single Co island. ► The magnetic anisotropy near the rim is negligible as compared to 0.148 meV/atom at the island center. ► A crossover of the magnetization reversal from an exchange-spring behavior to domain wall formation is suggested. ► The impact of the observed spatial variation of the spin-dependent electronic properties on reversal is discussed. -- Abstract: We study the magnetization reversal and the position dependence of the spin-dependent electronic properties of nm small bilayer Co islands on Cu(1 1 1) by spin-polarized scanning tunneling microscopy in magnetic fields at low temperatures of 8 K. The analysis of the energy barrier of magnetization reversal from measurements of the switching field suggests a crossover of the magnetization reversal mode with increasing island size around 7500 atoms from exchange-spring behavior to domain wall formation. The quantitative analysis of the island size dependence of the energy barrier indicates an inhomogeneous magnetic anisotropy of the island. The island rim is magnetically soft, whereas the center shows a pronounced effective anisotropy of 0.148 meV/atom. We speculate that this inhomogeneity of the magnetic anisotropy might be a consequence of the spatial dependence of the spin-dependent electronic properties. We measure a spin-polarization and a tunnel magneto resistance ratio of opposite sign at the rim as compared to the island center.

New insights into nano-magnetism by spin-polarized scanning tunneling microscopy

International Nuclear Information System (INIS)

Sander, Dirk; Oka, Hirofumi; Corbetta, Marco; Stepanyuk, Valeri; Kirschner, Jürgen

2013-01-01

Highlights: ► We measure the magnetization reversal of individual nm small Co island by spin-STM. ► We identify an inhomogeneous magnetic anisotropy within a single Co island. ► The magnetic anisotropy near the rim is negligible as compared to 0.148 meV/atom at the island center. ► A crossover of the magnetization reversal from an exchange-spring behavior to domain wall formation is suggested. ► The impact of the observed spatial variation of the spin-dependent electronic properties on reversal is discussed. -- Abstract: We study the magnetization reversal and the position dependence of the spin-dependent electronic properties of nm small bilayer Co islands on Cu(1 1 1) by spin-polarized scanning tunneling microscopy in magnetic fields at low temperatures of 8 K. The analysis of the energy barrier of magnetization reversal from measurements of the switching field suggests a crossover of the magnetization reversal mode with increasing island size around 7500 atoms from exchange-spring behavior to domain wall formation. The quantitative analysis of the island size dependence of the energy barrier indicates an inhomogeneous magnetic anisotropy of the island. The island rim is magnetically soft, whereas the center shows a pronounced effective anisotropy of 0.148 meV/atom. We speculate that this inhomogeneity of the magnetic anisotropy might be a consequence of the spatial dependence of the spin-dependent electronic properties. We measure a spin-polarization and a tunnel magneto resistance ratio of opposite sign at the rim as compared to the island center

Modulation of spin-orbit torque efficiency by thickness control of heavy metal layers in Co/Pt multilayers

Energy Technology Data Exchange (ETDEWEB)

Sethi, P.; Krishnia, S.; Li, S.H.; Lew, W.S., E-mail: wensiang@ntu.edu.sg

2017-03-15

We investigate and quantify spin-orbit torque (SOT) strength by current induced effective in-plane magnetic fields and spin Hall angle (SHA) using AC harmonic Hall voltage measurements techniques on Ta/Pt/Co/Pt/Co/Ta thin film structures. The proposed Co/Pt thin film double stack gives property enhancement on thermal stability and perpendicular magnetization anisotropy strength over the single stack Pt/Co/Ta. In the proposed Co/Pt double stack we observed that increasing the Ta capping thickness to three times enhances the SHA in similar order, consistent with larger spin injection efficiency. Doubling the Pt spacer layer thickness reduces the SHA by nearly 1.4 times, due to partial cancellation of SOT by bottom layer Pt, negating the increase from the top Co/Pt interface. The in-plane current threshold for magnetization switching is lower with the increase of the SHA.

Probing quantum spin glass like system with a double quantum dot

Science.gov (United States)

Koh, C. Y.; Kwek, L. C.

2016-06-01

We study the ground state properties of a 4-qubit spin glass like (SGL) chain with probes at the end of the chain and compare our results with the non-spin glass like (NSGL) case. The SGL is modeled as a spin chain with nearest-neighbor couplings, taking on normal variates with mean J and variance Δ2. The entanglement between the probes is used to detect any discontinuity in the ground state energy spectrum. For the NSGL case, it was found that the concurrence of the probes exhibits sharp transitions whenever there are abrupt changes in the energy spectrum. In particular, for the 4-qubit case, there is a sudden change in the ground state energy at an external magnetic field B of around 0.66 (resulting in a drop in concurrence of the probes) and 1.7 (manifest as a spike). The latter spike persists for finite temperature case. For the SGL sample with sufficiently large Δ, however, the spike is absent. Thus, an absence in the spike could act as a possible signature of the presence of SGL effects. Moreover, the sudden drop in concurrence at B ≈ 0.66 does not disappear but gets smeared with increasing Δ. However, this drop can be accentuated with a smaller probe coupling. The finite temperature case is also briefly discussed.

The magnetic properties of a mixed spin-1/2 and spin-1 Heisenberg ferrimagnetic system on a two-dimensional square lattice

Energy Technology Data Exchange (ETDEWEB)

Hu, Ai-Yuan, E-mail: huaiyuanhuyuanai@126.com [School of Physics and Electronic Engineering, Chongqing Normal University, Chongqing 401331 (China); Zhang, A.-Jie [Military Operational Research Teaching Division of the 4th Department, PLA Academy of National Defense Information, Wuhan 430000 (China)

2016-02-01

The magnetic properties of a mixed spin-1/2 and spin-1 Heisenberg ferrimagnetic system on a two-dimensional square lattice are investigated by means of the double-time Green's function technique within the random phase decoupling approximation. The role of the nearest-, next-nearest-neighbors interactions and the exchange anisotropy in the Hamiltonian is explored. And their effects on the critical and compensation temperature are discussed in detail. Our investigation indicates that both the next-nearest-neighbor interactions and the anisotropy have a great effect on the phase diagram. - Highlights: • Spin-1/2 and spin-1 ferrimagnetic model is examined. • Green's function technique is used. • The role of the nearest-, next-nearest-neighbors interactions and the exchange anisotropy in the Hamiltonian is explored. • The next-nearest-neighbor interactions and the anisotropy have a great effect on the phase diagram.

Electron-nuclear interaction in 13C nanotube double quantum dots

DEFF Research Database (Denmark)

Churchill, H O H; Bestwick, A J; Harlow, J W

2009-01-01

For coherent electron spins, hyperfine coupling to nuclei in the host material can either be a dominant source of unwanted spin decoherence or, if controlled effectively, a resource enabling storage and retrieval of quantum information. To investigate the effect of a controllable nuclear...... environment on the evolution of confined electron spins, we have fabricated and measured gate-defined double quantum dots with integrated charge sensors made from single-walled carbon nanotubes with a variable concentration of 13C (nuclear spin I=1/2) among the majority zero-nuclear-spin 12C atoms. We observe...... strong isotope effects in spin-blockaded transport, and from the magnetic field dependence estimate the hyperfine coupling in 13C nanotubes to be of the order of 100 ¿µeV, two orders of magnitude larger than anticipated. 13C-enhanced nanotubes are an interesting system for spin-based quantum information...

Stablité des Eléments Trans-ferminums à Haut Spin : Mesure de la barrière de fission de 254No

OpenAIRE

Henning , Gregoire

2012-01-01

Super heavy nuclei provide opportunities to study nuclear structure near three simultaneous limits: in charge Z, spin I and excitation energy E∗. These nuclei exist only because of a fission barrier, created by shell effects. It is therefore important to determine the fission barrier and its spin dependence Bf(I), which gives information on the shell energy Eshell(I). Theoretical calculations predict different fission barrier heights from Bf(I = 0) = 6.8 MeV for a macro-microscopic model to 8...

Ladder Ising spin configurations. Pt. 1. Heat capacity

International Nuclear Information System (INIS)

Mejdani, R.; Lambros, A.

1996-01-01

We consider a ladder Ising spin model (with two coupled Ising spin chains), characterized by two couplings (interchain and intrachain couplings), to study in detail, in an analytical way, its thermal behaviour and particularly the variation of the specific heat versus temperature, the ratio of interaction constants, and the magnetic field. It is interesting that when the competition between interchain and intrachain interactions is strong the specific heat exhibits a double peak and when the competition is not so strong the specific heat has a single peak. Further, without entering into details, we give, in a numerical way, some similar results for more complicated ladder configurations (with more than two linear Ising chains). The spin-1/2 ladders or systems of spin chains may be realized in nature by vanadyl pyrophosphate ((VO) 2 P 2 O 7 ) or similar materials. All these intermediate systems are today important to gain further insight into the physics of one-dimensional spin chains and two-dimensional high-T c spin systems, both of which have shown interesting and unusual magnetic and superconducting properties. It is plausible that experimental and theoretical studies of ladders may lead to other interesting physical phenomena. (orig.)

Spin wave dynamics in Heisenberg ferromagnetic/antiferromagnetic single-walled nanotubes

Energy Technology Data Exchange (ETDEWEB)

Mi, Bin-Zhou, E-mail: mbzfjerry2008@126.com [Department of Basic Curriculum, North China Institute of Science and Technology, Beijing 101601 (China); Department of Physics, School of Mathematics and Physics, University of Science and Technology Beijing, Beijing 100083 (China)

2016-09-15

The spin wave dynamics, including the magnetization, spin wave dispersion relation, and energy level splitting, of Heisenberg ferromagnetic/antiferromagnetic single-walled nanotubes are systematically calculated by use of the double-time Green’s function method within the random phase approximation. The role of temperature, diameter of the tube, and wave vector on spin wave energy spectrum and energy level splitting are carefully analyzed. There are two categories of spin wave modes, which are quantized and degenerate, and the total number of independent magnon branches is dependent on diameter of the tube, caused by the physical symmetry of nanotubes. Moreover, the number of flat spin wave modes increases with diameter of the tube rising. The spin wave energy and the energy level splitting decrease with temperature rising, and become zero as temperature reaches the critical point. At any temperature, the energy level splitting varies with wave vector, and for a larger wave vector it is smaller. When pb=π, the boundary of first Brillouin zone, spin wave energies are degenerate, and the energy level splittings are zero.

Physics and application of persistent spin helix state in semiconductor heterostructures

Science.gov (United States)

Kohda, Makoto; Salis, Gian

2017-07-01

In order to utilize the spin degree of freedom in semiconductors, control of spin states and transfer of the spin information are fundamental requirements for future spintronic devices and quantum computing. Spin orbit (SO) interaction generates an effective magnetic field for moving electrons and enables spin generation, spin manipulation and spin detection without using external magnetic field and magnetic materials. However, spin relaxation also takes place due to a momentum dependent SO-induced effective magnetic field. As a result, SO interaction is considered to be a double-edged sword facilitating spin control but preventing spin transport over long distances. The persistent spin helix (PSH) state solves this problem since uniaxial alignment of the SO field with SU(2) symmetry enables the suppression of spin relaxation while spin precession can still be controlled. Consequently, understanding the PSH becomes an important step towards future spintronic technologies for classical and quantum applications. Here, we review recent progress of PSH in semiconductor heterostructures and its device application. Fundamental physics of SO interaction and the conditions of a PSH state in semiconductor heterostructures are discussed. We introduce experimental techniques to observe a PSH and explain both optical and electrical measurements for detecting a long spin relaxation time and the formation of a helical spin texture. After emphasizing the bulk Dresselhaus SO coefficient γ, the application of PSH states for spin transistors and logic circuits are discussed.

On the ground-state degeneracy and entropy in a double-tetrahedral chain formed by the localized Ising spins and mobile electrons

Science.gov (United States)

Gálisová, Lucia

2018-05-01

Ground-state properties of a hybrid double-tetrahedral chain, in which the localized Ising spins regularly alternate with triangular plaquettes occupied by a variable number of mobile electrons, are exactly investigated. We demonstrate that the zero-temperature phase diagram of the model involves several non-degenerate, two-fold degenerate and macroscopically degenerate chiral phases. Low-temperature dependencies of the entropy and specific heat are also examined in order to gain a deeper insight into the degeneracy of individual ground-state phases and phase transitions. It is shown that a diversity of the ground-state degeneracy manifests itself in multiple-peak structures of both thermodynamic quantities. A remarkable temperature dependencies of the specific heat with two and three Schottky-type maxima are discussed in detail.

Theory of spin-dependent tunnelling in magnetic junctions

International Nuclear Information System (INIS)

Mathon, J.

2002-01-01

Rigorous theory of the tunnelling magnetoresistance (TMR) based on the real-space Kubo formula and fully realistic tight-binding bands fitted to an ab initio band structure is described. It is first applied to calculate the TMR of two Co electrodes separated by a vacuum gap. The calculated TMR ratio reaches ∼65% in the tunnelling regime but can be as high as 280% in the metallic regime when the vacuum gap is of the order of the Co interatomic distance (abrupt domain wall). It is also shown that the spin polarization P of the tunnelling current is negative in the metallic regime but becomes positive P∼35% in the tunnelling regime. Calculation of the TMR of an epitaxial Fe/MgO/Fe(001) junction is also described. The calculated optimistic TMR ratio is in excess of 1000% for an MgO barrier of ∼20 atomic planes and the spin polarization of the tunnelling current is positive for all MgO thicknesses. It is also found that spin-dependent tunnelling in an Fe/MgO/Fe(001) junction is not entirely determined by states at the Γ point (k parallel = 0) even for MgO thicknesses as large as ∼20 atomic planes. Finally, it is demonstrated that the TMR ratio calculated from the Kubo formula remains non-zero when one of the Co electrodes is covered with a copper layer. It is shown that non-zero TMR is due to quantum well states in the Cu layer which do not participate in transport. Since these only occur in the down-spin channel, their loss from transport creates a spin asymmetry of electrons tunnelling from a Cu interlayer, i.e. non-zero TMR. Numerical modelling is used to show that diffuse scattering from a random distribution of impurities in the barrier may cause quantum well states to evolve into propagating states, in which case the spin asymmetry of the non-magnetic layer is lost and with it the TMR. (author)

Donor states in a semimagnetic Cd1 -xinMnxin Te /Cd1 -xoutMnxout Te Double Quantum Well

Science.gov (United States)

Kalpana, Panneer Selvam; Nithiananthi, Perumal; Jayakumar, Kalyanasundaram

2017-02-01

The theoretical investigation has been carried out on the binding energy of donor associated with the electrons confined in a Cd1 -xinMnxin Te /Cd1 -xoutMnxout Te Double Quantum Well (DQW) as a function of central barrier width for various well dimensions and impurity locations in the barrier and the well. The magnetic field can act as a tool to continuously change the interwell coupling inside this DQW systems and its effect on donor binding has also been studied. Moreover, the polaronic corrections, which is due to the strong exchange interaction between the magnetic moment of Mn2+ ion and the spin of the confined carrier, to the binding energy of the hydrogenic donor impurity has also been estimated with and without the application of magnetic field. The binding energy of the donor impurity is determined by solving the Schrodinger equation variationally in the effective mass approximation and the effect due to Bound Magnetic Polaron (BMP) is included using mean field theory with the modified Brillouin function. The results are reported and discussed.

Measurements of the Double-Spin Asymmetry A₁ on Helium-3: Toward a Precise Measurement of the Neutron A₁

Energy Technology Data Exchange (ETDEWEB)

Parno, Diana Seymour [Carnegie Mellon Univ., Pittsburgh, PA (United States)

2011-04-01

The spin structure of protons and neutrons has been an open question for nearly twenty-five years, after surprising experimental results disproved the simple model in which valence quarks were responsible for nearly 100% of the nucleon spin. Diverse theoretical approaches have been brought to bear on the problem, but a shortage of precise data - especially on neutron spin structure - has prevented a thorough understanding. Experiment E06-014, conducted in Hall A of Jefferson Laboratory in 2009, presented an opportunity to add to the world data set for the neutron in the poorly covered valence-quark region. Jefferson Laboratory's highly polarized electron beam, combined with Hall A's facilities for a high-density, highly polarized ³He target, allowed a high-luminosity double-polarized experiment, while the large acceptance of the BigBite spectrometer gave coverage over a wide kinematic range: 0.15 < x < 0.95. In this work, we present the analysis of a portion of the E06-014 data, measured with an incident beam energy of 4.74 GeV and spanning 1.5 < Q² < 5.5 (GeV/c)². From these data, we extract the longitudinal asymmetry in virtual photon-nucleon scattering, A₁, on the ³He nucleus. Combined with the remaining E06-014 data, this will form the basis of a measurement of the neutron asymmetry A^η₁ that will extend the kinematic range of the data available to test models of spin-dependent parton distributions in the nucleon.

Double parton scattering. A tale of two partons

Energy Technology Data Exchange (ETDEWEB)

Kasemets, Tomas

2013-08-15

Double parton scattering in proton-proton collisions can give sizable contributions to final states in parts of phase space. We investigate the correlations between the partons participating in the two hard interactions of double parton scattering. With a detailed calculation of the differential cross section for the double Drell-Yan process we demonstrate how initial state correlations between the partons affect the rate and distribution of final state particles. We present our results with focus on correlations between the polarizations of the partons. In particular transversely polarized quarks lead to a dependence of the cross section on angles between final state particles of the two hard interactions, and thereby on the invariant mass of particle pairs. The size of the spin correlations, and therewith the degree to which the final state particles are correlated, depends on unknown double parton distributions. We derive positivity bounds on the double parton distributions that follow from their interpretation as probability densities, taking into account all possible spin correlations between two partons in an unpolarized proton. We show that the bounds are stable under homogeneous leading-order DGLAP evolution to higher scales. We make direct use of the positivity bounds in numerical investigations on the double DGLAP evolution for two linearly polarized gluons and for two transversely polarized quarks. We find that the linearly polarized gluons are likely to be negligible at high scales but that transversely polarized quarks can still play a significant role. We examine the dependence of the double parton distributions on the transverse distance between the two partons, and therewith between the two hard interactions. We further study the interplay between transverse and longitudinal variables of the distributions, as well as the impact of the differences in integration limits between the evolution equations for single and double parton distributions. (orig.)

Incommensurate Spiral Order from Double-Exchange Interactions

NARCIS (Netherlands)

Azhar, Maria; Mostovoy, Maxim

2017-01-01

The double-exchange model describing interactions of itinerant electrons with localized spins is usually used to explain ferromagnetism in metals. We show that for a variety of crystal lattices of different dimensionalities and for a wide range of model parameters, the ferromagnetic state is

TESTING MODELS OF MAGNETIC FIELD EVOLUTION OF NEUTRON STARS WITH THE STATISTICAL PROPERTIES OF THEIR SPIN EVOLUTIONS

International Nuclear Information System (INIS)

Zhang Shuangnan; Xie Yi

2012-01-01

We test models for the evolution of neutron star (NS) magnetic fields (B). Our model for the evolution of the NS spin is taken from an analysis of pulsar timing noise presented by Hobbs et al.. We first test the standard model of a pulsar's magnetosphere in which B does not change with time and magnetic dipole radiation is assumed to dominate the pulsar's spin-down. We find that this model fails to predict both the magnitudes and signs of the second derivatives of the spin frequencies (ν-double dot). We then construct a phenomenological model of the evolution of B, which contains a long-term decay (LTD) modulated by short-term oscillations; a pulsar's spin is thus modified by its B-evolution. We find that an exponential LTD is not favored by the observed statistical properties of ν-double dot for young pulsars and fails to explain the fact that ν-double dot is negative for roughly half of the old pulsars. A simple power-law LTD can explain all the observed statistical properties of ν-double dot. Finally, we discuss some physical implications of our results to models of the B-decay of NSs and suggest reliable determination of the true ages of many young NSs is needed, in order to constrain further the physical mechanisms of their B-decay. Our model can be further tested with the measured evolutions of ν-dot and ν-double dot for an individual pulsar; the decay index, oscillation amplitude, and period can also be determined this way for the pulsar.

Detection of fractional solitons in quantum spin Hall systems

Science.gov (United States)

Fleckenstein, C.; Traverso Ziani, N.; Trauzettel, B.

2018-03-01

We propose two experimental setups that allow for the implementation and the detection of fractional solitons of the Goldstone-Wilczek type. The first setup is based on two magnetic barriers at the edge of a quantum spin Hall system for generating the fractional soliton. If then a quantum point contact is created with the other edge, the linear conductance shows evidence of the fractional soliton. The second setup consists of a single magnetic barrier covering both edges and implementing a long quantum point contact. In this case, the fractional soliton can unambiguously be detected as a dip in the conductance without the need to control the magnetization of the barrier.

Schematic model studies of double beta decay processes

International Nuclear Information System (INIS)

Civitarese, O.

1996-01-01

Some features of the nuclear matrix elements, for double beta decay transitions to a final ground state and to a final excited one and two-quadrupole phonon states, are presented and discussed in the framework of a schematic model. The competition between spin-flip and non-spin-flip transitions on the relevant nuclear matrix elements, the effects due to proton-neutron pairing correlations and the effects due to the inclusion of exchange terms in the QRPA matrix are discussed. (Author)

How does incomplete fusion show up at slightly above barrier energies?

Directory of Open Access Journals (Sweden)

Prasad R.

2012-02-01

Full Text Available Experimental results on the onset of incomplete fusion at slightly above barrier energies are discussed in this paper. Spin-distributions of evaporation residues populated via complete and/or incomplete fusion of 12C,16O (Elab ≈ 4–7 MeV with 169Tm have been measured to probe associated ℓ–values. Particle (Z=1,2 – γ – coincidence technique has been used for channel selection. Entirely different entry state spin populations have been observed during the de-excitation of complete and incomplete composites. The complete fusion residues are found to be strongly fed over a broad spin range. While, a narrow range feeding for only high spin states has been observed in case of incomplete fusion residues. In the present work, incomplete fusion is shown to be a promising tool to populate high spin states in final reaction products. For better insight into the onset and strength of incomplete fusion, the relative contributions of complete and incomplete fusion have been deduced from the analysis of excitation functions and forward recoil ranges. A significant fraction of ICF has been observed even at energy as low as ≈ 7% above the barrier. The relative strengths of complete and incomplete fusion deduced from the analysis of forward-recoil-ranges and excitation functions complement each other. All the available results are discussed in light of the Morgenstern’s mass-asymmetry systematics. Incomplete fusion fraction is found to be large for more mass-asymmetric systems for individual projectiles, which points towards the projectile structure effect on incomplete fusion fraction. Experimentally measured forward ranges of recoils complement the existence of incomplete fusion at slightly above barrier energies, where more than one linear-momentum-transfer components associated with full- and/or partial-fusion of projectile(s have been observed. Present results conclusively demonstrate the possibility to selectively populate high spin states

SUSY formalism for the symmetric double well potential

Indian Academy of Sciences (India)

symmetric double well potential barrier we have obtained a class of exactly solvable potentials subject to moving boundary condition. The eigenstates are also obtained by the same technique. Keywords. SUSY; moving boundary condition; exactly solvable; symmetric double well; NH3 molecule. PACS Nos 02.30.Ik; 03.50.

Origin of spin-polarization in edge boron doped zigzag graphene nanoribbon: a potential spin filter.

Science.gov (United States)

Chakrabarty, Soubhik; Wasey, A H M Abdul; Thapa, Ranjit; Das, Gour Prasad

2018-06-04

To realize the graphene based spintronic device the prime challenge is to control the electronic structure of edges. In this work we find the origin of spin filtering property in edge boron doped zigzag graphene nanoribbon (ZGNRs) and provide a guide to prepare the graphene based next generation spin filter based device. Here we unveil the role of orbital (p-electron) to tune the electronic, magnetic and transport properties of the edge B doped ZGNRs. When all the edge carbon atoms at one of the edges of ZGNRs are replaced by B (100% edge B-doping), the system undergoes semiconductor to metal transition. The role of passivation of the edge with single/double atomic hydrogen on the electronic properties and its relation with the p electron is correlated in-depth. 50% edge B-doped ZGNRs (50% of the edge C atoms at one of the edges are replaced by B) also shows half-metallicity when the doped edge is left unpassivated. The half-metallic systems show 100% spin-filtering efficiency for a wide range of bias voltages. Zero bias transmission function of the other configurations shows asymmetric behavior for the up and down spin channels, thereby indicating their possible application potential in nano-spintronics. © 2018 IOP Publishing Ltd.

Quasibound states in graphene quantum-dot nanostructures generated by concentric potential barrier rings

International Nuclear Information System (INIS)

Jiang Zhao-Tan; Yu Cheng-Long; Dong Quan-Li

2012-01-01

We study the quasibound states in a graphene quantum-dot structure generated by the single-, double-, and triple-barrier electrostatic potentials. It is shown that the strongest quasibound states are mainly determined by the innermost barrier. Specifically, the positions of the quasibound states are determined by the barrier height, the number of the quasibound states is determined by the quantum-dot radius and the angular momentum, and the localization degree of the quasibound states is influenced by the width of the innermost barrier, as well as the outside barriers. Furthermore, according to the study on the double- and triple-barrier quantum dots, we find that an effective way to generate more quasibound states with even larger energy level spacings is to design a quantum dot defined by many concentric barriers with larger barrier-height differences. Last, we extend our results into the quantum dot of many barriers, which gives a complete picture about the formation of the quasibound states in the kind of graphene quantum dot created by many concentric potential barrier rings. (rapid communication)

Nuclear spin measurement using the angular correlation method

International Nuclear Information System (INIS)

Schapira, J.-P.

The double angular correlation method is defined by a semi-classical approach (Biendenharn). The equivalence formula in quantum mechanics are discussed for coherent and incoherent angular momentum mixing; the correlations are described from the density and efficiency matrices (Fano). The ambiguities in double angular correlations can be sometimes suppressed (emission of particles with a high orbital momentum l), using triple correlations between levels with well defined spin and parity. Triple correlations are applied to the case where the direction of linear polarization of γ-rays is detected [fr

Maximum magnitude in bias-dependent spin accumulation signals of CoFe/MgO/Si on insulator devices

International Nuclear Information System (INIS)

Ishikawa, M.; Sugiyama, H.; Inokuchi, T.; Tanamoto, T.; Saito, Y.; Hamaya, K.; Tezuka, N.

2013-01-01

We study in detail how the bias voltage (V bias ) and interface resistance (RA) depend on the magnitude of spin accumulation signals (|ΔV| or |ΔV|/I, where I is current) as detected by three-terminal Hanle measurements in CoFe/MgO/Si on insulator (SOI) devices with various MgO layer thicknesses and SOI carrier densities. We find the apparent maximum magnitude of spin polarization as a function of V bias and the correlation between the magnitude of spin accumulation signals and the shape of differential conductance (dI/dV) curves within the framework of the standard spin diffusion model. All of the experimental results can be explained by taking into account the density of states (DOS) in CoFe under the influence of the applied V bias and the quality of MgO tunnel barrier. These results indicate that it is important to consider the DOS of the ferromagnetic materials under the influence of an applied V bias and the quality of tunnel barrier when observing large spin accumulation signals in Si

Yttria-stabilized zirkonia / gadolinium zirconate double-layer plasma-sprayed thermal barrier coating systems (TBCs)

International Nuclear Information System (INIS)

Bakan, Emine

2015-01-01

Thermal barrier coating (TBC) research and development is driven by the desirability of further increasing the maximum inlet temperature in a gas turbine engine. A number of new top coat ceramic materials have been proposed during the last decades due to limited temperature capability (1200 C) of the state-of-the-art yttria-stabilized zirconia (7 wt. % Y 2 O 3 -ZrO 2 , YSZ) at long term operation. Zirconate pyrochlores of the large lanthanides((Gd → La) 2 Zr 2 O 7 ) have been particularly attractive due to their higher temperature phase stability than that of the YSZ. Nonetheless, the issues related with the implementation of pyrochlores such as low fracture toughness and formation of deleterious interphases with thermally grown oxide (TGO, Al 2 O 3 ) were reported. The implication was the requirement of an interlayer between the pyrochlores and TGO, which introduced double-layer systems to the TBC literature. Furthermore, processability issues of pyrochlores associated with the different evaporation rates of lanthanide oxides and zirconia resulting in unfavorable composition variations in the coatings were addressed in different studies. After all, although the material properties are available, there is a paucity of data in the literature concerning the properties of the coatings made of pyrochlores. From the processability point of view the most reported pyrochlore is La 2 Zr 2 O 7 . Hence, the goal of this research was to investigate plasma-sprayed Gd 2 Zr 2 O 7 (GZO) coatings and YSZ/GZO double-layer TBC systems. Three main topics were examined based on processing, performance and properties: (i) the plasma spray processing of the GZO and its impact on the microstructural and compositional properties of the GZO coatings; (ii) the cycling lifetime of the YSZ/GZO double-layer systems under thermal gradient at a surface temperature of 1400 C; (iii) the properties of the GZO and YSZ coatings such as thermal conductivity, coefficient of thermal expansion as well

Constraining ΔG at low-x with Double Longitudinal Spin Asymmetries for Forward Hadrons in PHENIX

Science.gov (United States)

McKinney, Cameron; Phenix Collaboration

2013-10-01

Recent global analyses that include polarized p+p data from RHIC through 2009 suggest for the first time a positive contribution of the gluon polarization, ΔG , to the overall proton spin. The data sets included in the analysis constrain Δg (x) in the range 0 . 05 double helicity asymmetry in hadron production at large pseudorapidity, with a dominant contribution from collisions between a high-momentum quark and a low-momentum gluon. At PHENIX, we measure cluster ALL at large pseudorapidity (3 . 1 Piston Calorimeter (MPC). The majority of the clusters (> 80 %) come from π0 decay where the photon showers in the calorimeter overlap. Simulations using the event generator PYTHIA have shown that measuring forward π0's can access Δg (x) for x 10-2 for inclusive π0's or down to x 10-3 for the dihadron channel. Here, we present the status of ALL measurements in the MPC at √{ s } = 500 GeV from the 2011 through 2013 runs. This data will help to provide stronger constraints on the form of Δg (x) in ongoing global analyses.

One-step patterning of double tone high contrast and high refractive index inorganic spin-on resist

Energy Technology Data Exchange (ETDEWEB)

Zanchetta, E.; Della Giustina, G.; Brusatin, G. [Industrial Engineering Department and INSTM, Via Marzolo 9, 35131 Padova (Italy)

2014-09-14

A direct one-step and low temperature micro-fabrication process, enabling to realize large area totally inorganic TiO₂ micro-patterns from a spin-on resist, is presented. High refractive index structures (up to 2 at 632 nm) without the need for transfer processes have been obtained by mask assisted UV lithography, exploiting photocatalytic titania properties. A distinctive feature not shared by any of the known available resists and boosting the material versatility, is that the system behaves either as a positive or as negative tone resist, depending on the process parameters and on the development chemistry. In order to explain the resist double tone behavior, deep comprehension of the lithographic process parameters optimization and of the resist chemistry and structure evolution during the lithographic process, generally uncommon in literature, is reported. Another striking property of the presented resist is that the negative tone shows a high contrast up to 19, allowing to obtain structures resolution down to 2 μm wide. The presented process and material permit to directly fabricate different titania geometries of great importance for solar cells, photo-catalysis, and photonic crystals applications.

Spin Triplet Nematic Pairing Symmetry and Superconducting Double Transition in U1-xThxBe13

Science.gov (United States)

Machida, Kazushige

2018-03-01

Motivated by a recent experiment on U1-xThxBe13 with x = 3%, we develop a theory to narrow down the possible pair symmetry to consistently describe the double transition utilizing various theoretical tools, including group theory and Ginzburg-Landau theory. It is explained in terms of the two-dimensional representation Eu with spin triplet. Symmetry breaking causes the degenerate Tc to split into two. The low-temperature phase is identified as the cyclic p wave: d(k) = \\hat{x}kx + ɛ \\hat{y}ky + ɛ 2\\hat{z}kz with ɛ3 = 1, whereas the biaxial nematic phase: d(k) = √{3} (\\hat{x}kx - \\hat{y}ky) is the high-temperature one. This allows us to simultaneously identify the uniaxial nematic phase: d(k) = 2\\hat{z}kz - \\hat{x}kx - \\hat{y}ky for UBe13, which spontaneously breaks the cubic symmetry of the system. Those pair functions are fully consistent with this description and existing data. We comment on the accidental scenario in addition to this degeneracy scenario and the intriguing topological nature hidden in this long-known material.

Magnetoresistance stories of double perovskites

Indian Academy of Sciences (India)

grain surfaces have also been proposed to act as tunnel barriers in Sr2FeMoO6. ... these double perovskites, a gradual decrease in the low-field MR and saturation ... simultaneously, and therefore serious material engineering was needed.

Dynamic spin polarization by orientation-dependent separation in a ferromagnet-semiconductor hybrid

Science.gov (United States)

Korenev, V. L.; Akimov, I. A.; Zaitsev, S. V.; Sapega, V. F.; Langer, L.; Yakovlev, D. R.; Danilov, Yu. A.; Bayer, M.

2012-07-01

Integration of magnetism into semiconductor electronics would facilitate an all-in-one-chip computer. Ferromagnet/bulk semiconductor hybrids have been, so far, mainly considered as key devices to read out the ferromagnetism by means of spin injection. Here we demonstrate that a Mn-based ferromagnetic layer acts as an orientation-dependent separator for carrier spins confined in a semiconductor quantum well that is set apart from the ferromagnet by a barrier only a few nanometers thick. By this spin-separation effect, a non-equilibrium electron-spin polarization is accumulated in the quantum well due to spin-dependent electron transfer to the ferromagnet. The significant advance of this hybrid design is that the excellent optical properties of the quantum well are maintained. This opens up the possibility of optical readout of the ferromagnet's magnetization and control of the non-equilibrium spin polarization in non-magnetic quantum wells.

New predictions for generalized spin polarizabilities from heavy baryon chiral perturbation theory

International Nuclear Information System (INIS)

Chung-Wen Kao; Barbara Pasquini; Marc Vanderhaeghen

2004-01-01

We extract the next-to-next-to-leading order results for spin-flip generalized polarizabilities (GPs) of the nucleon from the spin-dependent amplitudes for virtual Compton scattering (VCS) at Ο(p 4 ) in heavy baryon chiral perturbation theory. At this order, no unknown low energy constants enter the theory, allowing us to make absolute predictions for all spin-flip GPs. Furthermore, by using constraint equations between the GPs due to nucleon crossing combined with charge conjugation symmetry of the VCS amplitudes, we get a next-to-next-to-next-to-leading order prediction for one of the GPs. We provide estimates for forthcoming double polarization experiments which allow to access these spin-flip GPs of the nucleon

Intradot spin-flip Andreev reflection tunneling through a ferromagnet-quantum dot-superconductor system with ac field

International Nuclear Information System (INIS)

Song Hongyan; Zhou Shiping

2008-01-01

We investigate Andreev reflection (AR) tunneling through a ferromagnet-quantum dot-superconductor (F-QD-S) system in the presence of an external ac field. The intradot spin-flip scattering in the QD is involved. Using the nonequilibrium Green function and BCS quasiparticle spectrum for superconductor, time-averaged AR conductance is formulated. The competition between the intradot spin-flip scattering and photon-assisted tunneling dominates the resonant behaviors of the time-averaged AR conductance. For weak intradot spin-flip scattering strengths, the AR conductance shows a series of equal interval resonant levels. However, the single-peak at main resonant level develops into a well-resolved double-peak resonance at a strong intradot spin-flip scattering strength. Remarkable, multiple-photon-assisted tunneling that generates photonic sideband peaks with a variable interval has been found. In addition, the AR conductance-bias voltage characteristic shows a transition between the single-peak to double-peak resonance as the ratio of the two tunneling strengths varies

Search for electric dipole moment in 129Xe atom using active nuclear spin maser

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Ichikawa Y.

2014-03-01

Full Text Available An experimental search for an electric dipole moment in the diamagnetic atom 129Xe is in progress through the precision measurement of spin precession frequency using an active nuclear spin maser. A 3He comagnetometer has been incorporated into the active spin maser system in order to cancel out the long-term drifts in the external magnetic field. Also, a double-cell geometry has been adopted in order to suppress the frequency shifts due to interaction with polarized Rb atoms. The first EDM measurement with the 129Xe active spin maser and the 3He comagnetometer has been conducted.

Measurement of the depolarization of the reaction 27Al(p vector,p vector.)27Al for the study of the spin-spin potential

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Loeh, H.

1981-01-01

For the study of the spin-spin interaction in the optical potential the depolarisation in the elastic scattering of polarized protons was measured. The double-scattering experiments were performed in the angular range 40 0 -110 0 at an incident energy of 10.35 MeV at the Erlangen QD-magnetic spectrometer. The determination of the optical model parameters independent from the spin-spin potentials was performed by the fitting of these to the observables and sigmasup(di). These were obtained from a measurement of the angular distribution of the analyzing power and the differential cross section in the 4π-scattering chamber for the reaction 27 Al(p vector,p 0 ) at the same energy. The compound contributions present at this energy, which can also influence the depolarization, were regarded by the calculation of the compound-elastic non-spin-flip respectively spin-flip subcross sections by means of the formalism of Hofmann, Richert, Tepel and Weidenmueller. Because the target nucleus 27 Al possesses in the ground state a spin I=5/2, also the possible quadrupole spin flip had to be included. This was performed by coupled-channel calculations. The respecting compound contributions and quadrupole effects corrected depolarization data could by used for the study of the spin-spin potentials by means of DWBA calculations. As result it was shown that for the description of the experimental data a spherical spin-spin potential of the strength Vsub(SS)=1.5+-0.3 MeV had to be assumed. (orig.) [de

PROCEEDINGS OF RIKEN BNL RESEARCH CENTER WORKSHOP ON SPIN PHYSICS AT RHIC IN YEAR-1 AND BEYOND

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